/*
 Navicat Premium Data Transfer

 Source Server         : 192.168.80.128_3306
 Source Server Type    : MySQL
 Source Server Version : 80026
 Source Host           : 192.168.80.128:3306
 Source Schema         : pas

 Target Server Type    : MySQL
 Target Server Version : 80026
 File Encoding         : 65001

 Date: 09/06/2022 14:49:45
*/

SET NAMES utf8mb4;
SET FOREIGN_KEY_CHECKS = 0;

-- ----------------------------
-- Table structure for os_admin_user
-- ----------------------------
DROP TABLE IF EXISTS `os_admin_user`;
CREATE TABLE `os_admin_user`  (
  `id` smallint(0) UNSIGNED NOT NULL AUTO_INCREMENT COMMENT 'ID',
  `username` varchar(20) CHARACTER SET utf8 COLLATE utf8_general_ci NOT NULL DEFAULT '' COMMENT '管理员用户名',
  `name` varchar(26) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '姓名',
  `sex` int(0) NOT NULL DEFAULT 1 COMMENT '性别 1 是男 2是女',
  `mobile` varchar(12) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '电话',
  `email` varchar(200) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '邮箱',
  `password` varchar(50) CHARACTER SET utf8 COLLATE utf8_general_ci NOT NULL DEFAULT '' COMMENT '管理员密码',
  `status` tinyint(0) UNSIGNED NOT NULL DEFAULT 1 COMMENT '状态 1 启用 0 禁用',
  `remark` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '备注',
  `create_time` datetime(0) NULL DEFAULT NULL COMMENT '创建时间',
  `last_login_time` datetime(0) NULL DEFAULT NULL COMMENT '最后登录时间',
  `last_login_ip` varchar(20) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '最后登录IP',
  PRIMARY KEY (`id`) USING BTREE,
  UNIQUE INDEX `username`(`username`) USING BTREE
) ENGINE = MyISAM AUTO_INCREMENT = 10 CHARACTER SET = utf8 COLLATE = utf8_general_ci COMMENT = '管理员表' ROW_FORMAT = Dynamic;

-- ----------------------------
-- Records of os_admin_user
-- ----------------------------
INSERT INTO `os_admin_user` VALUES (1, 'admin', '系统管理员', 1, '0', NULL, 'e10adc3949ba59abbe56e057f20f883e', 1, NULL, '2016-10-18 15:28:37', '2022-03-25 08:42:41', '183.209.96.242');

-- ----------------------------
-- Table structure for os_applicant_attr
-- ----------------------------
DROP TABLE IF EXISTS `os_applicant_attr`;
CREATE TABLE `os_applicant_attr`  (
  `id` int(0) NOT NULL AUTO_INCREMENT COMMENT 'ID',
  `applicantid` int(0) NULL DEFAULT 0 COMMENT '申请人id',
  `type` int(0) NULL DEFAULT 0 COMMENT '1.当前 2.原始',
  `status` int(0) NULL DEFAULT 0,
  `original` int(0) NULL DEFAULT 0,
  `frist` int(0) NULL DEFAULT 0,
  `pid` int(0) NULL DEFAULT NULL COMMENT '专利id',
  `addrid` int(0) NULL DEFAULT 0,
  `lang` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL,
  `order` int(0) NULL DEFAULT NULL COMMENT '申请人顺序（0为第一申请人）',
  PRIMARY KEY (`id`) USING BTREE,
  INDEX `applicantid`(`applicantid`) USING BTREE,
  INDEX `pid`(`pid`) USING BTREE,
  INDEX `type`(`type`) USING BTREE,
  INDEX `status`(`status`) USING BTREE,
  INDEX `order`(`order`) USING BTREE
) ENGINE = InnoDB AUTO_INCREMENT = 352555 CHARACTER SET = utf8 COLLATE = utf8_general_ci COMMENT = '申请人关联属性表' ROW_FORMAT = Dynamic;

-- ----------------------------
-- Records of os_applicant_attr
-- ----------------------------
INSERT INTO `os_applicant_attr` VALUES (345677, 7083, 1, 0, 0, 0, 23625, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345678, 7083, 2, 0, 0, 0, 23625, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345679, 7083, 1, 0, 0, 0, 23626, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345680, 7083, 2, 0, 0, 0, 23626, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345681, 7083, 1, 0, 0, 0, 23627, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345682, 7083, 2, 0, 0, 0, 23627, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345683, 7083, 1, 0, 0, 0, 23628, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345684, 7083, 2, 0, 0, 0, 23628, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345685, 7083, 1, 0, 0, 0, 23629, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345686, 7083, 2, 0, 0, 0, 23629, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345687, 7083, 1, 0, 0, 0, 23630, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345688, 7083, 2, 0, 0, 0, 23630, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345689, 7083, 1, 0, 0, 0, 23631, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345690, 7083, 2, 0, 0, 0, 23631, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345691, 7083, 1, 0, 0, 0, 23632, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345692, 7083, 2, 0, 0, 0, 23632, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345693, 7084, 1, 0, 0, 0, 23633, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345694, 7084, 2, 0, 0, 0, 23633, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345695, 7085, 1, 0, 0, 0, 23634, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345696, 7083, 2, 0, 0, 0, 23634, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345697, 7085, 1, 0, 0, 0, 23635, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345698, 7083, 2, 0, 0, 0, 23635, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345699, 7083, 1, 0, 0, 0, 23636, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345700, 7083, 2, 0, 0, 0, 23636, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345701, 7085, 1, 0, 0, 0, 23637, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345702, 7083, 2, 0, 0, 0, 23637, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345703, 7085, 1, 0, 0, 0, 23638, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345704, 7083, 2, 0, 0, 0, 23638, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345705, 7085, 1, 0, 0, 0, 23639, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345706, 7083, 2, 0, 0, 0, 23639, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345707, 7085, 1, 0, 0, 0, 23640, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345708, 7083, 2, 0, 0, 0, 23640, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345709, 7085, 1, 0, 0, 0, 23641, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345710, 7083, 2, 0, 0, 0, 23641, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345711, 7084, 1, 0, 0, 0, 23642, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345712, 7084, 2, 0, 0, 0, 23642, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345713, 7084, 1, 0, 0, 0, 23643, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345714, 7084, 2, 0, 0, 0, 23643, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345715, 7085, 1, 0, 0, 0, 23644, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345716, 7083, 2, 0, 0, 0, 23644, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345717, 7085, 1, 0, 0, 0, 23645, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345718, 7083, 2, 0, 0, 0, 23645, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345719, 7085, 1, 0, 0, 0, 23646, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345720, 7083, 2, 0, 0, 0, 23646, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345721, 7083, 1, 0, 0, 0, 23647, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345722, 7083, 2, 0, 0, 0, 23647, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345723, 7083, 1, 0, 0, 0, 23648, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345724, 7083, 2, 0, 0, 0, 23648, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345725, 7083, 1, 0, 0, 0, 23649, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345726, 7083, 2, 0, 0, 0, 23649, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345727, 7085, 1, 0, 0, 0, 23650, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345728, 7083, 2, 0, 0, 0, 23650, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345729, 7085, 1, 0, 0, 0, 23651, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345730, 7083, 2, 0, 0, 0, 23651, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345731, 7085, 1, 0, 0, 0, 23652, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345732, 7083, 2, 0, 0, 0, 23652, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345733, 7083, 1, 0, 0, 0, 23653, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345734, 7083, 2, 0, 0, 0, 23653, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345735, 7085, 1, 0, 0, 0, 23654, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345736, 7083, 2, 0, 0, 0, 23654, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345737, 7083, 1, 0, 0, 0, 23655, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345738, 7083, 2, 0, 0, 0, 23655, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345739, 7084, 1, 0, 0, 0, 23656, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345740, 7084, 2, 0, 0, 0, 23656, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345741, 7085, 1, 0, 0, 0, 23657, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345742, 7083, 2, 0, 0, 0, 23657, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345743, 7086, 1, 0, 0, 0, 23658, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345744, 7086, 2, 0, 0, 0, 23658, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345745, 7087, 1, 0, 0, 0, 23659, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345746, 7087, 2, 0, 0, 0, 23659, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345747, 7085, 1, 0, 0, 0, 23660, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345748, 7083, 2, 0, 0, 0, 23660, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345749, 7087, 1, 0, 0, 0, 23661, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345750, 7087, 2, 0, 0, 0, 23661, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345751, 7084, 1, 0, 0, 0, 23662, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345752, 7084, 2, 0, 0, 0, 23662, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345753, 7084, 1, 0, 0, 0, 23663, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345754, 7084, 2, 0, 0, 0, 23663, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345755, 7085, 1, 0, 0, 0, 23664, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345756, 7083, 2, 0, 0, 0, 23664, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345757, 7084, 1, 0, 0, 0, 23665, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345758, 7084, 2, 0, 0, 0, 23665, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345759, 7084, 1, 0, 0, 0, 23666, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345760, 7084, 2, 0, 0, 0, 23666, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345761, 7083, 1, 0, 0, 0, 23667, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345762, 7083, 2, 0, 0, 0, 23667, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345763, 7084, 1, 0, 0, 0, 23668, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345764, 7084, 2, 0, 0, 0, 23668, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345765, 7083, 1, 0, 0, 0, 23669, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345766, 7083, 2, 0, 0, 0, 23669, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345767, 7083, 1, 0, 0, 0, 23670, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345768, 7083, 2, 0, 0, 0, 23670, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345769, 7085, 1, 0, 0, 0, 23671, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345770, 7083, 2, 0, 0, 0, 23671, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345771, 7085, 1, 0, 0, 0, 23672, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345772, 7083, 2, 0, 0, 0, 23672, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345773, 7084, 1, 0, 0, 0, 23673, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345774, 7084, 2, 0, 0, 0, 23673, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345775, 7084, 1, 0, 0, 0, 23674, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345776, 7084, 2, 0, 0, 0, 23674, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345777, 7084, 1, 0, 0, 0, 23675, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345778, 7084, 2, 0, 0, 0, 23675, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345779, 7084, 1, 0, 0, 0, 23676, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345780, 7084, 2, 0, 0, 0, 23676, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345781, 7085, 1, 0, 0, 0, 23677, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345782, 7083, 2, 0, 0, 0, 23677, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345783, 7084, 1, 0, 0, 0, 23678, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345784, 7084, 2, 0, 0, 0, 23678, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345785, 7085, 1, 0, 0, 0, 23679, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345786, 7083, 2, 0, 0, 0, 23679, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345787, 7084, 1, 0, 0, 0, 23680, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345788, 7084, 2, 0, 0, 0, 23680, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345789, 7084, 1, 0, 0, 0, 23681, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345790, 7084, 2, 0, 0, 0, 23681, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345791, 7088, 1, 0, 0, 0, 23682, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345792, 7088, 2, 0, 0, 0, 23682, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345793, 7084, 1, 0, 0, 0, 23683, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345794, 7084, 2, 0, 0, 0, 23683, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345795, 7084, 1, 0, 0, 0, 23684, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345796, 7084, 2, 0, 0, 0, 23684, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345797, 7084, 1, 0, 0, 0, 23685, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345798, 7084, 2, 0, 0, 0, 23685, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345799, 7085, 1, 0, 0, 0, 23686, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345800, 7083, 2, 0, 0, 0, 23686, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345801, 7084, 1, 0, 0, 0, 23687, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345802, 7084, 2, 0, 0, 0, 23687, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345803, 7088, 1, 0, 0, 0, 23688, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345804, 7088, 2, 0, 0, 0, 23688, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345805, 7088, 1, 0, 0, 0, 23689, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345806, 7088, 2, 0, 0, 0, 23689, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345807, 7087, 1, 0, 0, 0, 23690, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345808, 7087, 2, 0, 0, 0, 23690, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345809, 7086, 1, 0, 0, 0, 23691, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345810, 7086, 2, 0, 0, 0, 23691, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345811, 7086, 1, 0, 0, 0, 23692, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345812, 7086, 2, 0, 0, 0, 23692, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345813, 7084, 1, 0, 0, 0, 23693, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345814, 7084, 2, 0, 0, 0, 23693, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345815, 7084, 1, 0, 0, 0, 23694, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345816, 7084, 2, 0, 0, 0, 23694, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345817, 7086, 1, 0, 0, 0, 23695, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345818, 7086, 2, 0, 0, 0, 23695, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345819, 7084, 1, 0, 0, 0, 23696, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345820, 7084, 2, 0, 0, 0, 23696, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345821, 7084, 1, 0, 0, 0, 23697, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345822, 7084, 2, 0, 0, 0, 23697, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345823, 7084, 1, 0, 0, 0, 23698, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345824, 7084, 2, 0, 0, 0, 23698, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345825, 7084, 1, 0, 0, 0, 23699, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345826, 7084, 2, 0, 0, 0, 23699, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345827, 7088, 1, 0, 0, 0, 23700, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345828, 7088, 2, 0, 0, 0, 23700, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345829, 7084, 1, 0, 0, 0, 23701, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345830, 7084, 2, 0, 0, 0, 23701, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345831, 7086, 1, 0, 0, 0, 23702, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345832, 7086, 2, 0, 0, 0, 23702, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345833, 7088, 1, 0, 0, 0, 23703, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345834, 7088, 2, 0, 0, 0, 23703, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345835, 7084, 1, 0, 0, 0, 23704, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345836, 7084, 2, 0, 0, 0, 23704, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345837, 7088, 1, 0, 0, 0, 23705, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345838, 7088, 2, 0, 0, 0, 23705, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345839, 7086, 1, 0, 0, 0, 23706, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345840, 7086, 2, 0, 0, 0, 23706, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345841, 7087, 1, 0, 0, 0, 23707, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345842, 7087, 2, 0, 0, 0, 23707, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345843, 7088, 1, 0, 0, 0, 23708, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345844, 7088, 2, 0, 0, 0, 23708, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345845, 7088, 1, 0, 0, 0, 23709, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345846, 7088, 2, 0, 0, 0, 23709, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345847, 7086, 1, 0, 0, 0, 23710, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345848, 7086, 2, 0, 0, 0, 23710, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345849, 7086, 1, 0, 0, 0, 23711, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345850, 7086, 2, 0, 0, 0, 23711, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345851, 7087, 1, 0, 0, 0, 23712, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345852, 7087, 2, 0, 0, 0, 23712, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345853, 7086, 1, 0, 0, 0, 23713, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345854, 7086, 2, 0, 0, 0, 23713, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345855, 7088, 1, 0, 0, 0, 23714, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345856, 7088, 2, 0, 0, 0, 23714, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345857, 7086, 1, 0, 0, 0, 23715, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345858, 7086, 2, 0, 0, 0, 23715, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345859, 7086, 1, 0, 0, 0, 23716, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345860, 7086, 2, 0, 0, 0, 23716, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345861, 7084, 1, 0, 0, 0, 23717, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345862, 7084, 2, 0, 0, 0, 23717, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345863, 7085, 1, 0, 0, 0, 23718, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345864, 7083, 2, 0, 0, 0, 23718, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345865, 7086, 1, 0, 0, 0, 23719, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345866, 7086, 2, 0, 0, 0, 23719, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345867, 7086, 1, 0, 0, 0, 23720, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345868, 7086, 2, 0, 0, 0, 23720, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345869, 7088, 1, 0, 0, 0, 23721, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345870, 7088, 2, 0, 0, 0, 23721, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345871, 7088, 1, 0, 0, 0, 23722, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345872, 7088, 2, 0, 0, 0, 23722, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345873, 7086, 1, 0, 0, 0, 23723, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345874, 7086, 2, 0, 0, 0, 23723, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345875, 7086, 1, 0, 0, 0, 23724, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345876, 7086, 2, 0, 0, 0, 23724, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345877, 7084, 1, 0, 0, 0, 23725, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345878, 7084, 2, 0, 0, 0, 23725, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345879, 7086, 1, 0, 0, 0, 23726, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345880, 7086, 2, 0, 0, 0, 23726, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345881, 7084, 1, 0, 0, 0, 23727, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345882, 7084, 2, 0, 0, 0, 23727, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345883, 7088, 1, 0, 0, 0, 23728, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345884, 7088, 2, 0, 0, 0, 23728, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345885, 7086, 1, 0, 0, 0, 23729, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345886, 7086, 2, 0, 0, 0, 23729, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345887, 7084, 1, 0, 0, 0, 23730, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345888, 7084, 2, 0, 0, 0, 23730, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345889, 7084, 1, 0, 0, 0, 23731, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345890, 7084, 2, 0, 0, 0, 23731, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345891, 7086, 1, 0, 0, 0, 23732, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345892, 7086, 2, 0, 0, 0, 23732, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345893, 7086, 1, 0, 0, 0, 23733, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345894, 7086, 2, 0, 0, 0, 23733, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345895, 7086, 1, 0, 0, 0, 23734, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345896, 7086, 2, 0, 0, 0, 23734, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345897, 7084, 1, 0, 0, 0, 23735, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345898, 7084, 2, 0, 0, 0, 23735, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345899, 7086, 1, 0, 0, 0, 23736, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345900, 7086, 2, 0, 0, 0, 23736, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345901, 7086, 1, 0, 0, 0, 23737, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345902, 7086, 2, 0, 0, 0, 23737, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345903, 7085, 1, 0, 0, 0, 23738, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345904, 7083, 2, 0, 0, 0, 23738, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345905, 7086, 1, 0, 0, 0, 23739, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345906, 7086, 2, 0, 0, 0, 23739, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345907, 7086, 1, 0, 0, 0, 23740, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345908, 7086, 2, 0, 0, 0, 23740, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345909, 7084, 1, 0, 0, 0, 23741, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345910, 7084, 2, 0, 0, 0, 23741, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345911, 7087, 1, 0, 0, 0, 23742, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345912, 7087, 2, 0, 0, 0, 23742, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345913, 7084, 1, 0, 0, 0, 23743, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345914, 7084, 2, 0, 0, 0, 23743, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345915, 7084, 1, 0, 0, 0, 23744, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345916, 7084, 2, 0, 0, 0, 23744, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345917, 7084, 1, 0, 0, 0, 23745, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345918, 7084, 2, 0, 0, 0, 23745, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345919, 7086, 1, 0, 0, 0, 23746, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345920, 7086, 2, 0, 0, 0, 23746, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345921, 7084, 1, 0, 0, 0, 23747, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345922, 7084, 2, 0, 0, 0, 23747, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345923, 7086, 1, 0, 0, 0, 23748, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345924, 7086, 2, 0, 0, 0, 23748, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345925, 7086, 1, 0, 0, 0, 23749, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345926, 7086, 2, 0, 0, 0, 23749, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345927, 7086, 1, 0, 0, 0, 23750, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345928, 7086, 2, 0, 0, 0, 23750, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345929, 7084, 1, 0, 0, 0, 23751, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345930, 7084, 2, 0, 0, 0, 23751, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345931, 7084, 1, 0, 0, 0, 23752, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345932, 7084, 2, 0, 0, 0, 23752, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345933, 7084, 1, 0, 0, 0, 23753, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345934, 7084, 2, 0, 0, 0, 23753, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345935, 7084, 1, 0, 0, 0, 23754, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345936, 7084, 2, 0, 0, 0, 23754, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345937, 7084, 1, 0, 0, 0, 23755, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345938, 7084, 2, 0, 0, 0, 23755, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345939, 7084, 1, 0, 0, 0, 23756, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345940, 7084, 2, 0, 0, 0, 23756, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345941, 7086, 1, 0, 0, 0, 23757, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345942, 7086, 2, 0, 0, 0, 23757, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345943, 7084, 1, 0, 0, 0, 23758, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345944, 7084, 2, 0, 0, 0, 23758, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345945, 7086, 1, 0, 0, 0, 23759, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345946, 7086, 2, 0, 0, 0, 23759, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345947, 7086, 1, 0, 0, 0, 23760, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345948, 7086, 2, 0, 0, 0, 23760, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345949, 7086, 1, 0, 0, 0, 23761, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345950, 7086, 2, 0, 0, 0, 23761, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345951, 7086, 1, 0, 0, 0, 23762, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345952, 7086, 2, 0, 0, 0, 23762, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345953, 7084, 1, 0, 0, 0, 23763, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345954, 7084, 2, 0, 0, 0, 23763, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345955, 7084, 1, 0, 0, 0, 23764, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345956, 7084, 2, 0, 0, 0, 23764, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345957, 7084, 1, 0, 0, 0, 23765, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345958, 7084, 2, 0, 0, 0, 23765, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345959, 7084, 1, 0, 0, 0, 23766, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345960, 7084, 2, 0, 0, 0, 23766, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345961, 7084, 1, 0, 0, 0, 23767, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345962, 7084, 2, 0, 0, 0, 23767, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345963, 7086, 1, 0, 0, 0, 23768, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345964, 7086, 2, 0, 0, 0, 23768, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345965, 7086, 1, 0, 0, 0, 23769, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345966, 7086, 2, 0, 0, 0, 23769, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345967, 7086, 1, 0, 0, 0, 23770, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345968, 7086, 2, 0, 0, 0, 23770, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345969, 7086, 1, 0, 0, 0, 23771, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345970, 7086, 2, 0, 0, 0, 23771, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345971, 7086, 1, 0, 0, 0, 23772, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345972, 7086, 2, 0, 0, 0, 23772, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345973, 7086, 1, 0, 0, 0, 23773, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345974, 7086, 2, 0, 0, 0, 23773, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345975, 7084, 1, 0, 0, 0, 23774, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345976, 7084, 2, 0, 0, 0, 23774, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345977, 7084, 1, 0, 0, 0, 23775, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345978, 7084, 2, 0, 0, 0, 23775, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345979, 7086, 1, 0, 0, 0, 23776, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345980, 7086, 2, 0, 0, 0, 23776, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345981, 7084, 1, 0, 0, 0, 23777, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345982, 7084, 2, 0, 0, 0, 23777, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345983, 7084, 1, 0, 0, 0, 23778, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345984, 7084, 2, 0, 0, 0, 23778, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345985, 7086, 1, 0, 0, 0, 23779, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345986, 7086, 2, 0, 0, 0, 23779, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345987, 7086, 1, 0, 0, 0, 23780, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345988, 7086, 2, 0, 0, 0, 23780, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345989, 7084, 1, 0, 0, 0, 23781, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345990, 7084, 2, 0, 0, 0, 23781, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345991, 7086, 1, 0, 0, 0, 23782, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345992, 7086, 2, 0, 0, 0, 23782, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345993, 7086, 1, 0, 0, 0, 23783, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345994, 7086, 2, 0, 0, 0, 23783, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345995, 7086, 1, 0, 0, 0, 23784, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345996, 7086, 2, 0, 0, 0, 23784, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345997, 7086, 1, 0, 0, 0, 23785, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345998, 7086, 2, 0, 0, 0, 23785, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (345999, 7086, 1, 0, 0, 0, 23786, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346000, 7086, 2, 0, 0, 0, 23786, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346001, 7086, 1, 0, 0, 0, 23787, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346002, 7086, 2, 0, 0, 0, 23787, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346003, 7086, 1, 0, 0, 0, 23788, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346004, 7086, 2, 0, 0, 0, 23788, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346005, 7086, 1, 0, 0, 0, 23789, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346006, 7086, 2, 0, 0, 0, 23789, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346007, 7086, 1, 0, 0, 0, 23790, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346008, 7086, 2, 0, 0, 0, 23790, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346009, 7086, 1, 0, 0, 0, 23791, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346010, 7086, 2, 0, 0, 0, 23791, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346011, 7086, 1, 0, 0, 0, 23792, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346012, 7086, 2, 0, 0, 0, 23792, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346013, 7086, 1, 0, 0, 0, 23793, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346014, 7086, 2, 0, 0, 0, 23793, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346015, 7084, 1, 0, 0, 0, 23794, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346016, 7084, 2, 0, 0, 0, 23794, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346017, 7086, 1, 0, 0, 0, 23795, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346018, 7086, 2, 0, 0, 0, 23795, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346019, 7086, 1, 0, 0, 0, 23796, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346020, 7086, 2, 0, 0, 0, 23796, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346021, 7086, 1, 0, 0, 0, 23797, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346022, 7086, 2, 0, 0, 0, 23797, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346023, 7086, 1, 0, 0, 0, 23798, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346024, 7086, 2, 0, 0, 0, 23798, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346025, 7086, 1, 0, 0, 0, 23799, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346026, 7086, 2, 0, 0, 0, 23799, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346027, 7085, 1, 0, 0, 0, 23800, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346028, 7085, 2, 0, 0, 0, 23800, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346029, 7086, 1, 0, 0, 0, 23801, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346030, 7086, 2, 0, 0, 0, 23801, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346031, 7085, 1, 0, 0, 0, 23802, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346032, 7085, 2, 0, 0, 0, 23802, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346033, 7085, 1, 0, 0, 0, 23803, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346034, 7085, 2, 0, 0, 0, 23803, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346035, 7084, 1, 0, 0, 0, 23804, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346036, 7084, 2, 0, 0, 0, 23804, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346037, 7085, 1, 0, 0, 0, 23805, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346038, 7085, 2, 0, 0, 0, 23805, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346039, 7085, 1, 0, 0, 0, 23806, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346040, 7085, 2, 0, 0, 0, 23806, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346041, 7085, 1, 0, 0, 0, 23807, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346042, 7085, 2, 0, 0, 0, 23807, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346043, 7086, 1, 0, 0, 0, 23808, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346044, 7086, 2, 0, 0, 0, 23808, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346045, 7085, 1, 0, 0, 0, 23809, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346046, 7085, 2, 0, 0, 0, 23809, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346047, 7085, 1, 0, 0, 0, 23810, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346048, 7085, 2, 0, 0, 0, 23810, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346049, 7086, 1, 0, 0, 0, 23811, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346050, 7086, 2, 0, 0, 0, 23811, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346051, 7086, 1, 0, 0, 0, 23812, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346052, 7086, 2, 0, 0, 0, 23812, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346053, 7084, 1, 0, 0, 0, 23813, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346054, 7084, 2, 0, 0, 0, 23813, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346055, 7086, 1, 0, 0, 0, 23814, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346056, 7086, 2, 0, 0, 0, 23814, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346057, 7086, 1, 0, 0, 0, 23815, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346058, 7086, 2, 0, 0, 0, 23815, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346059, 7085, 1, 0, 0, 0, 23816, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346060, 7085, 2, 0, 0, 0, 23816, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346061, 7084, 1, 0, 0, 0, 23817, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346062, 7084, 2, 0, 0, 0, 23817, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346063, 7084, 1, 0, 0, 0, 23818, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346064, 7084, 2, 0, 0, 0, 23818, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346065, 7085, 1, 0, 0, 0, 23819, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346066, 7085, 2, 0, 0, 0, 23819, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346067, 7086, 1, 0, 0, 0, 23820, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346068, 7086, 2, 0, 0, 0, 23820, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346069, 7086, 1, 0, 0, 0, 23821, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346070, 7086, 2, 0, 0, 0, 23821, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346071, 7085, 1, 0, 0, 0, 23822, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346072, 7085, 2, 0, 0, 0, 23822, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346073, 7085, 1, 0, 0, 0, 23823, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346074, 7085, 2, 0, 0, 0, 23823, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346075, 7086, 1, 0, 0, 0, 23824, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346076, 7086, 2, 0, 0, 0, 23824, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346077, 7085, 1, 0, 0, 0, 23825, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346078, 7085, 2, 0, 0, 0, 23825, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346079, 7085, 1, 0, 0, 0, 23826, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346080, 7085, 2, 0, 0, 0, 23826, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346081, 7085, 1, 0, 0, 0, 23827, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346082, 7085, 2, 0, 0, 0, 23827, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346083, 7086, 1, 0, 0, 0, 23828, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346084, 7086, 2, 0, 0, 0, 23828, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346085, 7086, 1, 0, 0, 0, 23829, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346086, 7086, 2, 0, 0, 0, 23829, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346087, 7086, 1, 0, 0, 0, 23830, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346088, 7086, 2, 0, 0, 0, 23830, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346089, 7084, 1, 0, 0, 0, 23831, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346090, 7084, 2, 0, 0, 0, 23831, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346091, 7084, 1, 0, 0, 0, 23832, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346092, 7084, 2, 0, 0, 0, 23832, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346093, 7087, 1, 0, 0, 0, 23833, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346094, 7087, 2, 0, 0, 0, 23833, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346095, 7086, 1, 0, 0, 0, 23834, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346096, 7086, 2, 0, 0, 0, 23834, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346097, 7086, 1, 0, 0, 0, 23835, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346098, 7086, 2, 0, 0, 0, 23835, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346099, 7086, 1, 0, 0, 0, 23836, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346100, 7086, 2, 0, 0, 0, 23836, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346101, 7085, 1, 0, 0, 0, 23837, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346102, 7085, 2, 0, 0, 0, 23837, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346103, 7084, 1, 0, 0, 0, 23838, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346104, 7084, 2, 0, 0, 0, 23838, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346105, 7086, 1, 0, 0, 0, 23839, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346106, 7086, 2, 0, 0, 0, 23839, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346107, 7086, 1, 0, 0, 0, 23840, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346108, 7086, 2, 0, 0, 0, 23840, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346109, 7086, 1, 0, 0, 0, 23841, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346110, 7086, 2, 0, 0, 0, 23841, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346111, 7085, 1, 0, 0, 0, 23842, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346112, 7085, 2, 0, 0, 0, 23842, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346113, 7084, 1, 0, 0, 0, 23843, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346114, 7084, 2, 0, 0, 0, 23843, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346115, 7086, 1, 0, 0, 0, 23844, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346116, 7086, 2, 0, 0, 0, 23844, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346117, 7086, 1, 0, 0, 0, 23845, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346118, 7086, 2, 0, 0, 0, 23845, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346119, 7087, 1, 0, 0, 0, 23846, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346120, 7087, 2, 0, 0, 0, 23846, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346121, 7086, 1, 0, 0, 0, 23847, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346122, 7086, 2, 0, 0, 0, 23847, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346123, 7085, 1, 0, 0, 0, 23848, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346124, 7085, 2, 0, 0, 0, 23848, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346125, 7085, 1, 0, 0, 0, 23849, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346126, 7085, 2, 0, 0, 0, 23849, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346127, 7085, 1, 0, 0, 0, 23850, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346128, 7085, 2, 0, 0, 0, 23850, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346129, 7086, 1, 0, 0, 0, 23851, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346130, 7086, 2, 0, 0, 0, 23851, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346131, 7086, 1, 0, 0, 0, 23852, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346132, 7086, 2, 0, 0, 0, 23852, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346133, 7085, 1, 0, 0, 0, 23853, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346134, 7085, 2, 0, 0, 0, 23853, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346135, 7087, 1, 0, 0, 0, 23854, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346136, 7087, 2, 0, 0, 0, 23854, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346137, 7086, 1, 0, 0, 0, 23855, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346138, 7086, 2, 0, 0, 0, 23855, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346139, 7086, 1, 0, 0, 0, 23856, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346140, 7086, 2, 0, 0, 0, 23856, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346141, 7086, 1, 0, 0, 0, 23857, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346142, 7086, 2, 0, 0, 0, 23857, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346143, 7086, 1, 0, 0, 0, 23858, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346144, 7086, 2, 0, 0, 0, 23858, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346145, 7084, 1, 0, 0, 0, 23859, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346146, 7084, 2, 0, 0, 0, 23859, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346147, 7086, 1, 0, 0, 0, 23860, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346148, 7086, 2, 0, 0, 0, 23860, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346149, 7084, 1, 0, 0, 0, 23861, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346150, 7084, 2, 0, 0, 0, 23861, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346151, 7084, 1, 0, 0, 0, 23862, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346152, 7084, 2, 0, 0, 0, 23862, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346153, 7087, 1, 0, 0, 0, 23863, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346154, 7087, 2, 0, 0, 0, 23863, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346155, 7086, 1, 0, 0, 0, 23864, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346156, 7086, 2, 0, 0, 0, 23864, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346157, 7086, 1, 0, 0, 0, 23865, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346158, 7086, 2, 0, 0, 0, 23865, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346159, 7086, 1, 0, 0, 0, 23866, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346160, 7086, 2, 0, 0, 0, 23866, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346161, 7086, 1, 0, 0, 0, 23867, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346162, 7086, 2, 0, 0, 0, 23867, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346163, 7084, 1, 0, 0, 0, 23868, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346164, 7084, 2, 0, 0, 0, 23868, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346165, 7084, 1, 0, 0, 0, 23869, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346166, 7084, 2, 0, 0, 0, 23869, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346167, 7084, 1, 0, 0, 0, 23870, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346168, 7084, 2, 0, 0, 0, 23870, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346169, 7084, 1, 0, 0, 0, 23871, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346170, 7084, 2, 0, 0, 0, 23871, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346171, 7084, 1, 0, 0, 0, 23872, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346172, 7084, 2, 0, 0, 0, 23872, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346173, 7084, 1, 0, 0, 0, 23873, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346174, 7084, 2, 0, 0, 0, 23873, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346175, 7087, 1, 0, 0, 0, 23874, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346176, 7087, 2, 0, 0, 0, 23874, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346177, 7085, 1, 0, 0, 0, 23875, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346178, 7085, 2, 0, 0, 0, 23875, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346179, 7085, 1, 0, 0, 0, 23876, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346180, 7085, 2, 0, 0, 0, 23876, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346181, 7085, 1, 0, 0, 0, 23877, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346182, 7085, 2, 0, 0, 0, 23877, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346183, 7086, 1, 0, 0, 0, 23878, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346184, 7086, 2, 0, 0, 0, 23878, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346185, 7084, 1, 0, 0, 0, 23879, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346186, 7084, 2, 0, 0, 0, 23879, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346187, 7084, 1, 0, 0, 0, 23880, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346188, 7084, 2, 0, 0, 0, 23880, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346189, 7085, 1, 0, 0, 0, 23881, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346190, 7085, 2, 0, 0, 0, 23881, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346191, 7084, 1, 0, 0, 0, 23882, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346192, 7084, 2, 0, 0, 0, 23882, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346193, 7084, 1, 0, 0, 0, 23883, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346194, 7084, 2, 0, 0, 0, 23883, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346195, 7086, 1, 0, 0, 0, 23884, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346196, 7086, 2, 0, 0, 0, 23884, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346197, 7086, 1, 0, 0, 0, 23885, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346198, 7086, 2, 0, 0, 0, 23885, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346199, 7084, 1, 0, 0, 0, 23886, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346200, 7084, 2, 0, 0, 0, 23886, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346201, 7086, 1, 0, 0, 0, 23887, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346202, 7086, 2, 0, 0, 0, 23887, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346203, 7084, 1, 0, 0, 0, 23888, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346204, 7084, 2, 0, 0, 0, 23888, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346205, 7086, 1, 0, 0, 0, 23889, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346206, 7086, 2, 0, 0, 0, 23889, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346207, 7086, 1, 0, 0, 0, 23890, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346208, 7086, 2, 0, 0, 0, 23890, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346209, 7084, 1, 0, 0, 0, 23891, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346210, 7084, 2, 0, 0, 0, 23891, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346211, 7084, 1, 0, 0, 0, 23892, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346212, 7084, 2, 0, 0, 0, 23892, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346213, 7087, 1, 0, 0, 0, 23893, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346214, 7087, 2, 0, 0, 0, 23893, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346215, 7085, 1, 0, 0, 0, 23894, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346216, 7085, 2, 0, 0, 0, 23894, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346217, 7085, 1, 0, 0, 0, 23895, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346218, 7085, 2, 0, 0, 0, 23895, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346219, 7085, 1, 0, 0, 0, 23896, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346220, 7085, 2, 0, 0, 0, 23896, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346221, 7086, 1, 0, 0, 0, 23897, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346222, 7086, 2, 0, 0, 0, 23897, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346223, 7086, 1, 0, 0, 0, 23898, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346224, 7086, 2, 0, 0, 0, 23898, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346225, 7086, 1, 0, 0, 0, 23899, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346226, 7086, 2, 0, 0, 0, 23899, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346227, 7085, 1, 0, 0, 0, 23900, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346228, 7085, 2, 0, 0, 0, 23900, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346229, 7086, 1, 0, 0, 0, 23901, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346230, 7086, 2, 0, 0, 0, 23901, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346231, 7086, 1, 0, 0, 0, 23902, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346232, 7086, 2, 0, 0, 0, 23902, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346233, 7086, 1, 0, 0, 0, 23903, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346234, 7086, 2, 0, 0, 0, 23903, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346235, 7087, 1, 0, 0, 0, 23904, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346236, 7087, 2, 0, 0, 0, 23904, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346237, 7084, 1, 0, 0, 0, 23905, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346238, 7084, 2, 0, 0, 0, 23905, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346239, 7084, 1, 0, 0, 0, 23906, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346240, 7084, 2, 0, 0, 0, 23906, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346241, 7085, 1, 0, 0, 0, 23907, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346242, 7085, 2, 0, 0, 0, 23907, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346243, 7088, 1, 0, 0, 0, 23908, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346244, 7088, 2, 0, 0, 0, 23908, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346245, 7086, 1, 0, 0, 0, 23909, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346246, 7086, 2, 0, 0, 0, 23909, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346247, 7085, 1, 0, 0, 0, 23910, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346248, 7085, 2, 0, 0, 0, 23910, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346249, 7085, 1, 0, 0, 0, 23911, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346250, 7085, 2, 0, 0, 0, 23911, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346251, 7085, 1, 0, 0, 0, 23912, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346252, 7085, 2, 0, 0, 0, 23912, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346253, 7085, 1, 0, 0, 0, 23913, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346254, 7085, 2, 0, 0, 0, 23913, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346255, 7087, 1, 0, 0, 0, 23914, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346256, 7087, 2, 0, 0, 0, 23914, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346257, 7084, 1, 0, 0, 0, 23915, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346258, 7084, 2, 0, 0, 0, 23915, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346259, 7087, 1, 0, 0, 0, 23916, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346260, 7087, 2, 0, 0, 0, 23916, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346261, 7084, 1, 0, 0, 0, 23917, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346262, 7084, 2, 0, 0, 0, 23917, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346263, 7084, 1, 0, 0, 0, 23918, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346264, 7084, 2, 0, 0, 0, 23918, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346265, 7086, 1, 0, 0, 0, 23919, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346266, 7086, 2, 0, 0, 0, 23919, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346267, 7085, 1, 0, 0, 0, 23920, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346268, 7085, 2, 0, 0, 0, 23920, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346269, 7085, 1, 0, 0, 0, 23921, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346270, 7085, 2, 0, 0, 0, 23921, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346271, 7086, 1, 0, 0, 0, 23922, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346272, 7086, 2, 0, 0, 0, 23922, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346273, 7086, 1, 0, 0, 0, 23923, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346274, 7086, 2, 0, 0, 0, 23923, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346275, 7086, 1, 0, 0, 0, 23924, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346276, 7086, 2, 0, 0, 0, 23924, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346277, 7086, 1, 0, 0, 0, 23925, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346278, 7086, 2, 0, 0, 0, 23925, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346279, 7086, 1, 0, 0, 0, 23926, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346280, 7086, 2, 0, 0, 0, 23926, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346281, 7085, 1, 0, 0, 0, 23927, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346282, 7085, 2, 0, 0, 0, 23927, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346283, 7085, 1, 0, 0, 0, 23928, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346284, 7085, 2, 0, 0, 0, 23928, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346285, 7086, 1, 0, 0, 0, 23929, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346286, 7086, 2, 0, 0, 0, 23929, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346287, 7086, 1, 0, 0, 0, 23930, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346288, 7086, 2, 0, 0, 0, 23930, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346289, 7086, 1, 0, 0, 0, 23931, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346290, 7086, 2, 0, 0, 0, 23931, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346291, 7086, 1, 0, 0, 0, 23932, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346292, 7086, 2, 0, 0, 0, 23932, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346293, 7086, 1, 0, 0, 0, 23933, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346294, 7086, 2, 0, 0, 0, 23933, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346295, 7086, 1, 0, 0, 0, 23934, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346296, 7086, 2, 0, 0, 0, 23934, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346297, 7086, 1, 0, 0, 0, 23935, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346298, 7086, 2, 0, 0, 0, 23935, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346299, 7085, 1, 0, 0, 0, 23936, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346300, 7085, 2, 0, 0, 0, 23936, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346301, 7085, 1, 0, 0, 0, 23937, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346302, 7085, 2, 0, 0, 0, 23937, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346303, 7085, 1, 0, 0, 0, 23938, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346304, 7085, 2, 0, 0, 0, 23938, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346305, 7088, 1, 0, 0, 0, 23939, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346306, 7088, 2, 0, 0, 0, 23939, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346307, 7085, 1, 0, 0, 0, 23940, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346308, 7085, 2, 0, 0, 0, 23940, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346309, 7086, 1, 0, 0, 0, 23941, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346310, 7086, 2, 0, 0, 0, 23941, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346311, 7086, 1, 0, 0, 0, 23942, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346312, 7086, 2, 0, 0, 0, 23942, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346313, 7086, 1, 0, 0, 0, 23943, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346314, 7086, 2, 0, 0, 0, 23943, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346315, 7085, 1, 0, 0, 0, 23944, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346316, 7085, 2, 0, 0, 0, 23944, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346317, 7085, 1, 0, 0, 0, 23945, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346318, 7085, 2, 0, 0, 0, 23945, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346319, 7085, 1, 0, 0, 0, 23946, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346320, 7085, 2, 0, 0, 0, 23946, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346321, 7086, 1, 0, 0, 0, 23947, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346322, 7086, 2, 0, 0, 0, 23947, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346323, 7084, 1, 0, 0, 0, 23948, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346324, 7084, 2, 0, 0, 0, 23948, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346325, 7088, 1, 0, 0, 0, 23949, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346326, 7088, 2, 0, 0, 0, 23949, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346327, 7085, 1, 0, 0, 0, 23950, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346328, 7085, 2, 0, 0, 0, 23950, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346329, 7085, 1, 0, 0, 0, 23951, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346330, 7085, 2, 0, 0, 0, 23951, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346331, 7086, 1, 0, 0, 0, 23952, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346332, 7086, 2, 0, 0, 0, 23952, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346333, 7086, 1, 0, 0, 0, 23953, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346334, 7086, 2, 0, 0, 0, 23953, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346335, 7086, 1, 0, 0, 0, 23954, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346336, 7086, 2, 0, 0, 0, 23954, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346337, 7086, 1, 0, 0, 0, 23955, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346338, 7086, 2, 0, 0, 0, 23955, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346339, 7086, 1, 0, 0, 0, 23956, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346340, 7086, 2, 0, 0, 0, 23956, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346341, 7085, 1, 0, 0, 0, 23957, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346342, 7085, 2, 0, 0, 0, 23957, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346343, 7086, 1, 0, 0, 0, 23958, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346344, 7086, 2, 0, 0, 0, 23958, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346345, 7086, 1, 0, 0, 0, 23959, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346346, 7086, 2, 0, 0, 0, 23959, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346347, 7087, 1, 0, 0, 0, 23960, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346348, 7087, 2, 0, 0, 0, 23960, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346349, 7087, 1, 0, 0, 0, 23961, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346350, 7087, 2, 0, 0, 0, 23961, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346351, 7086, 1, 0, 0, 0, 23962, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346352, 7086, 2, 0, 0, 0, 23962, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346353, 7086, 1, 0, 0, 0, 23963, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346354, 7086, 2, 0, 0, 0, 23963, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346355, 7086, 1, 0, 0, 0, 23964, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346356, 7086, 2, 0, 0, 0, 23964, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346357, 7087, 1, 0, 0, 0, 23965, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346358, 7087, 2, 0, 0, 0, 23965, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346359, 7087, 1, 0, 0, 0, 23966, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346360, 7087, 2, 0, 0, 0, 23966, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346361, 7086, 1, 0, 0, 0, 23967, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346362, 7086, 2, 0, 0, 0, 23967, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346363, 7086, 1, 0, 0, 0, 23968, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346364, 7086, 2, 0, 0, 0, 23968, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346365, 7085, 1, 0, 0, 0, 23969, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346366, 7085, 2, 0, 0, 0, 23969, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346367, 7085, 1, 0, 0, 0, 23970, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346368, 7085, 2, 0, 0, 0, 23970, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346369, 7084, 1, 0, 0, 0, 23971, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346370, 7084, 2, 0, 0, 0, 23971, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346371, 7085, 1, 0, 0, 0, 23972, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346372, 7085, 2, 0, 0, 0, 23972, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346373, 7086, 1, 0, 0, 0, 23973, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346374, 7086, 2, 0, 0, 0, 23973, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346375, 7086, 1, 0, 0, 0, 23974, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346376, 7086, 2, 0, 0, 0, 23974, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346377, 7085, 1, 0, 0, 0, 23975, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346378, 7085, 2, 0, 0, 0, 23975, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346379, 7085, 1, 0, 0, 0, 23976, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346380, 7085, 2, 0, 0, 0, 23976, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346381, 7088, 1, 0, 0, 0, 23977, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346382, 7088, 2, 0, 0, 0, 23977, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346383, 7085, 1, 0, 0, 0, 23978, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346384, 7085, 2, 0, 0, 0, 23978, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346385, 7086, 1, 0, 0, 0, 23979, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346386, 7086, 2, 0, 0, 0, 23979, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346387, 7086, 1, 0, 0, 0, 23980, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346388, 7086, 2, 0, 0, 0, 23980, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346389, 7085, 1, 0, 0, 0, 23981, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346390, 7085, 2, 0, 0, 0, 23981, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346391, 7084, 1, 0, 0, 0, 23982, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346392, 7084, 2, 0, 0, 0, 23982, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346393, 7085, 1, 0, 0, 0, 23983, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346394, 7085, 2, 0, 0, 0, 23983, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346395, 7085, 1, 0, 0, 0, 23984, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346396, 7085, 2, 0, 0, 0, 23984, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346397, 7086, 1, 0, 0, 0, 23985, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346398, 7086, 2, 0, 0, 0, 23985, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346399, 7087, 1, 0, 0, 0, 23986, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346400, 7087, 2, 0, 0, 0, 23986, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346401, 7086, 1, 0, 0, 0, 23987, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346402, 7086, 2, 0, 0, 0, 23987, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346403, 7085, 1, 0, 0, 0, 23988, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346404, 7085, 2, 0, 0, 0, 23988, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346405, 7086, 1, 0, 0, 0, 23989, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346406, 7086, 2, 0, 0, 0, 23989, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346407, 7085, 1, 0, 0, 0, 23990, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346408, 7085, 2, 0, 0, 0, 23990, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346409, 7087, 1, 0, 0, 0, 23991, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346410, 7087, 2, 0, 0, 0, 23991, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346411, 7087, 1, 0, 0, 0, 23992, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346412, 7087, 2, 0, 0, 0, 23992, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346413, 7085, 1, 0, 0, 0, 23993, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346414, 7085, 2, 0, 0, 0, 23993, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346415, 7085, 1, 0, 0, 0, 23994, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346416, 7085, 2, 0, 0, 0, 23994, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346417, 7085, 1, 0, 0, 0, 23995, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346418, 7085, 2, 0, 0, 0, 23995, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346419, 7085, 1, 0, 0, 0, 23996, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346420, 7085, 2, 0, 0, 0, 23996, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346421, 7084, 1, 0, 0, 0, 23997, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346422, 7084, 2, 0, 0, 0, 23997, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346423, 7085, 1, 0, 0, 0, 23998, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346424, 7085, 2, 0, 0, 0, 23998, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346425, 7085, 1, 0, 0, 0, 23999, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346426, 7085, 2, 0, 0, 0, 23999, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346427, 7084, 1, 0, 0, 0, 24000, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346428, 7084, 2, 0, 0, 0, 24000, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346429, 7086, 1, 0, 0, 0, 24001, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346430, 7086, 2, 0, 0, 0, 24001, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346431, 7084, 1, 0, 0, 0, 24002, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346432, 7084, 2, 0, 0, 0, 24002, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346433, 7086, 1, 0, 0, 0, 24003, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346434, 7086, 2, 0, 0, 0, 24003, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346435, 7085, 1, 0, 0, 0, 24004, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346436, 7085, 2, 0, 0, 0, 24004, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346437, 7085, 1, 0, 0, 0, 24005, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346438, 7085, 2, 0, 0, 0, 24005, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346439, 7086, 1, 0, 0, 0, 24006, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346440, 7086, 2, 0, 0, 0, 24006, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346441, 7086, 1, 0, 0, 0, 24007, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346442, 7086, 2, 0, 0, 0, 24007, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346443, 7086, 1, 0, 0, 0, 24008, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (346444, 7086, 2, 0, 0, 0, 24008, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (346445, 7089, 1, 0, 0, 0, 24008, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346446, 7089, 2, 0, 0, 0, 24008, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346447, 7085, 1, 0, 0, 0, 24009, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346448, 7085, 2, 0, 0, 0, 24009, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346449, 7087, 1, 0, 0, 0, 24010, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346450, 7087, 2, 0, 0, 0, 24010, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346451, 7085, 1, 0, 0, 0, 24011, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346452, 7085, 2, 0, 0, 0, 24011, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346453, 7086, 1, 0, 0, 0, 24012, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346454, 7086, 2, 0, 0, 0, 24012, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346455, 7087, 1, 0, 0, 0, 24013, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346456, 7087, 2, 0, 0, 0, 24013, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346457, 7086, 1, 0, 0, 0, 24014, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346458, 7086, 2, 0, 0, 0, 24014, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346459, 7084, 1, 0, 0, 0, 24015, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346460, 7084, 2, 0, 0, 0, 24015, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346461, 7087, 1, 0, 0, 0, 24016, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346462, 7087, 2, 0, 0, 0, 24016, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346463, 7085, 1, 0, 0, 0, 24017, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346464, 7085, 2, 0, 0, 0, 24017, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346465, 7087, 1, 0, 0, 0, 24018, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346466, 7087, 2, 0, 0, 0, 24018, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346467, 7086, 1, 0, 0, 0, 24019, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346468, 7086, 2, 0, 0, 0, 24019, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346469, 7086, 1, 0, 0, 0, 24020, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346470, 7086, 2, 0, 0, 0, 24020, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346471, 7085, 1, 0, 0, 0, 24021, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346472, 7085, 2, 0, 0, 0, 24021, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346473, 7085, 1, 0, 0, 0, 24022, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346474, 7085, 2, 0, 0, 0, 24022, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346475, 7086, 1, 0, 0, 0, 24023, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346476, 7086, 2, 0, 0, 0, 24023, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346477, 7086, 1, 0, 0, 0, 24024, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346478, 7086, 2, 0, 0, 0, 24024, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346479, 7086, 1, 0, 0, 0, 24025, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346480, 7086, 2, 0, 0, 0, 24025, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346481, 7084, 1, 0, 0, 0, 24026, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346482, 7084, 2, 0, 0, 0, 24026, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346483, 7086, 1, 0, 0, 0, 24027, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346484, 7086, 2, 0, 0, 0, 24027, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346485, 7086, 1, 0, 0, 0, 24028, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346486, 7086, 2, 0, 0, 0, 24028, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346487, 7085, 1, 0, 0, 0, 24029, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346488, 7085, 2, 0, 0, 0, 24029, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346489, 7086, 1, 0, 0, 0, 24030, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346490, 7086, 2, 0, 0, 0, 24030, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346491, 7084, 1, 0, 0, 0, 24031, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346492, 7084, 2, 0, 0, 0, 24031, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346493, 7086, 1, 0, 0, 0, 24032, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346494, 7086, 2, 0, 0, 0, 24032, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346495, 7086, 1, 0, 0, 0, 24033, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346496, 7086, 2, 0, 0, 0, 24033, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346497, 7086, 1, 0, 0, 0, 24034, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346498, 7086, 2, 0, 0, 0, 24034, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346499, 7085, 1, 0, 0, 0, 24035, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346500, 7085, 2, 0, 0, 0, 24035, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346501, 7085, 1, 0, 0, 0, 24036, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346502, 7085, 2, 0, 0, 0, 24036, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346503, 7086, 1, 0, 0, 0, 24037, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346504, 7086, 2, 0, 0, 0, 24037, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346505, 7085, 1, 0, 0, 0, 24038, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346506, 7085, 2, 0, 0, 0, 24038, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346507, 7085, 1, 0, 0, 0, 24039, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346508, 7085, 2, 0, 0, 0, 24039, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346509, 7087, 1, 0, 0, 0, 24040, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346510, 7087, 2, 0, 0, 0, 24040, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346511, 7086, 1, 0, 0, 0, 24041, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346512, 7086, 2, 0, 0, 0, 24041, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346513, 7087, 1, 0, 0, 0, 24042, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346514, 7087, 2, 0, 0, 0, 24042, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346515, 7084, 1, 0, 0, 0, 24043, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346516, 7084, 2, 0, 0, 0, 24043, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346517, 7087, 1, 0, 0, 0, 24044, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346518, 7087, 2, 0, 0, 0, 24044, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346519, 7085, 1, 0, 0, 0, 24045, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346520, 7085, 2, 0, 0, 0, 24045, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346521, 7087, 1, 0, 0, 0, 24046, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346522, 7087, 2, 0, 0, 0, 24046, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346523, 7087, 1, 0, 0, 0, 24047, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346524, 7087, 2, 0, 0, 0, 24047, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346525, 7085, 1, 0, 0, 0, 24048, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346526, 7085, 2, 0, 0, 0, 24048, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346527, 7085, 1, 0, 0, 0, 24049, 0, NULL, 2);
INSERT INTO `os_applicant_attr` VALUES (346528, 7085, 2, 0, 0, 0, 24049, 0, NULL, 2);
INSERT INTO `os_applicant_attr` VALUES (346529, 7090, 1, 0, 0, 0, 24049, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346530, 7090, 2, 0, 0, 0, 24049, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346531, 7091, 1, 0, 0, 0, 24049, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (346532, 7091, 2, 0, 0, 0, 24049, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (346533, 7085, 1, 0, 0, 0, 24050, 0, NULL, 2);
INSERT INTO `os_applicant_attr` VALUES (346534, 7085, 2, 0, 0, 0, 24050, 0, NULL, 2);
INSERT INTO `os_applicant_attr` VALUES (346535, 7090, 1, 0, 0, 0, 24050, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346536, 7090, 2, 0, 0, 0, 24050, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346537, 7091, 1, 0, 0, 0, 24050, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (346538, 7091, 2, 0, 0, 0, 24050, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (346539, 7085, 1, 0, 0, 0, 24051, 0, NULL, 2);
INSERT INTO `os_applicant_attr` VALUES (346540, 7085, 2, 0, 0, 0, 24051, 0, NULL, 2);
INSERT INTO `os_applicant_attr` VALUES (346541, 7090, 1, 0, 0, 0, 24051, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346542, 7090, 2, 0, 0, 0, 24051, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346543, 7091, 1, 0, 0, 0, 24051, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (346544, 7091, 2, 0, 0, 0, 24051, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (346545, 7083, 1, 0, 0, 0, 24052, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346546, 7083, 2, 0, 0, 0, 24052, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346547, 7085, 1, 0, 0, 0, 24053, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346548, 7083, 2, 0, 0, 0, 24053, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346549, 7084, 1, 0, 0, 0, 24054, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346550, 7084, 2, 0, 0, 0, 24054, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346551, 7084, 1, 0, 0, 0, 24055, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346552, 7084, 2, 0, 0, 0, 24055, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346553, 7084, 1, 0, 0, 0, 24056, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346554, 7084, 2, 0, 0, 0, 24056, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346555, 7084, 1, 0, 0, 0, 24057, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346556, 7084, 2, 0, 0, 0, 24057, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346557, 7084, 1, 0, 0, 0, 24058, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346558, 7084, 2, 0, 0, 0, 24058, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346559, 7084, 1, 0, 0, 0, 24059, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346560, 7084, 2, 0, 0, 0, 24059, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346561, 7084, 1, 0, 0, 0, 24060, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346562, 7084, 2, 0, 0, 0, 24060, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346563, 7084, 1, 0, 0, 0, 24061, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346564, 7084, 2, 0, 0, 0, 24061, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346565, 7084, 1, 0, 0, 0, 24062, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346566, 7084, 2, 0, 0, 0, 24062, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346567, 7084, 1, 0, 0, 0, 24063, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346568, 7084, 2, 0, 0, 0, 24063, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346569, 7087, 1, 0, 0, 0, 24064, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (346570, 7087, 2, 0, 0, 0, 24064, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350639, 6993, 1, 0, 0, 0, 22745, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350640, 6993, 2, 0, 0, 0, 22745, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350641, 6993, 1, 0, 0, 0, 22746, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (350642, 6993, 2, 0, 0, 0, 22746, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (350643, 6994, 1, 0, 0, 0, 22746, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350644, 6994, 2, 0, 0, 0, 22746, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350645, 6994, 1, 0, 0, 0, 22747, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350646, 6994, 2, 0, 0, 0, 22747, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350647, 6995, 1, 0, 0, 0, 22747, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (350648, 6995, 2, 0, 0, 0, 22747, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (350649, 6993, 2, 0, 0, 0, 22748, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350650, 6996, 1, 0, 0, 0, 22748, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350651, 6993, 2, 0, 0, 0, 22749, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350652, 6996, 1, 0, 0, 0, 22749, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350653, 6995, 1, 0, 0, 0, 22750, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350654, 6995, 2, 0, 0, 0, 22750, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350655, 6996, 1, 0, 0, 0, 22751, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350656, 6997, 2, 0, 0, 0, 22751, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350657, 6993, 2, 0, 0, 0, 22752, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350658, 6996, 1, 0, 0, 0, 22752, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350659, 6993, 2, 0, 0, 0, 22753, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350660, 6996, 1, 0, 0, 0, 22753, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350661, 6998, 1, 0, 0, 0, 22754, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350662, 6998, 2, 0, 0, 0, 22754, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350663, 6996, 1, 0, 0, 0, 22755, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350664, 6996, 2, 0, 0, 0, 22755, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350665, 6999, 2, 0, 0, 0, 22756, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350666, 7000, 1, 0, 0, 0, 22756, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350667, 6993, 1, 0, 0, 0, 22757, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350668, 6993, 2, 0, 0, 0, 22757, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350669, 6999, 2, 0, 0, 0, 22758, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350670, 7001, 1, 0, 0, 0, 22758, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350671, 6996, 1, 0, 0, 0, 22759, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350672, 7002, 2, 0, 0, 0, 22759, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350673, 6999, 2, 0, 0, 0, 22760, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350674, 7000, 1, 0, 0, 0, 22760, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350675, 7000, 1, 0, 0, 0, 22761, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350676, 7001, 2, 0, 0, 0, 22761, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350677, 6993, 2, 0, 0, 0, 22762, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350678, 6996, 1, 0, 0, 0, 22762, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350679, 6993, 2, 0, 0, 0, 22763, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350680, 6996, 1, 0, 0, 0, 22763, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350681, 6993, 2, 0, 0, 0, 22764, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350682, 6996, 1, 0, 0, 0, 22764, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350683, 6995, 2, 0, 0, 0, 22765, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350684, 6996, 1, 0, 0, 0, 22765, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350685, 6999, 2, 0, 0, 0, 22766, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350686, 7000, 1, 0, 0, 0, 22766, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350687, 6999, 2, 0, 0, 0, 22767, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350688, 7000, 1, 0, 0, 0, 22767, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350689, 6999, 2, 0, 0, 0, 22768, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350690, 7001, 1, 0, 0, 0, 22768, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350691, 6999, 2, 0, 0, 0, 22769, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350692, 7000, 1, 0, 0, 0, 22769, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350693, 6993, 2, 0, 0, 0, 22770, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350694, 6996, 1, 0, 0, 0, 22770, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350695, 6995, 2, 0, 0, 0, 22771, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350696, 6996, 1, 0, 0, 0, 22771, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350697, 6993, 1, 0, 0, 0, 22772, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350698, 6993, 2, 0, 0, 0, 22772, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350699, 6999, 2, 0, 0, 0, 22773, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350700, 7000, 1, 0, 0, 0, 22773, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350701, 7000, 1, 0, 0, 0, 22774, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350702, 7000, 2, 0, 0, 0, 22774, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350703, 6993, 1, 0, 0, 0, 22775, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350704, 7003, 2, 0, 0, 0, 22775, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350705, 6999, 2, 0, 0, 0, 22776, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350706, 7000, 1, 0, 0, 0, 22776, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350707, 7000, 1, 0, 0, 0, 22777, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350708, 7000, 2, 0, 0, 0, 22777, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350709, 6999, 2, 0, 0, 0, 22778, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350710, 7000, 1, 0, 0, 0, 22778, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350711, 6999, 2, 0, 0, 0, 22779, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350712, 7000, 1, 0, 0, 0, 22779, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350713, 6999, 2, 0, 0, 0, 22780, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350714, 7000, 1, 0, 0, 0, 22780, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350715, 6995, 2, 0, 0, 0, 22781, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350716, 6996, 1, 0, 0, 0, 22781, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350717, 6993, 2, 0, 0, 0, 22782, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350718, 6996, 1, 0, 0, 0, 22782, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350719, 6999, 2, 0, 0, 0, 22783, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350720, 7000, 1, 0, 0, 0, 22783, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350721, 6999, 2, 0, 0, 0, 22784, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350722, 7000, 1, 0, 0, 0, 22784, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350723, 6999, 2, 0, 0, 0, 22785, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350724, 7000, 1, 0, 0, 0, 22785, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350725, 6993, 2, 0, 0, 0, 22786, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350726, 6996, 1, 0, 0, 0, 22786, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350727, 6999, 2, 0, 0, 0, 22787, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350728, 7000, 1, 0, 0, 0, 22787, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350729, 6999, 2, 0, 0, 0, 22788, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350730, 7000, 1, 0, 0, 0, 22788, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350731, 6999, 2, 0, 0, 0, 22789, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350732, 7000, 1, 0, 0, 0, 22789, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350733, 6996, 1, 0, 0, 0, 22790, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350734, 7004, 2, 0, 0, 0, 22790, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350735, 7005, 1, 0, 0, 0, 22791, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350736, 7005, 2, 0, 0, 0, 22791, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350737, 6996, 1, 0, 0, 0, 22792, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350738, 6996, 2, 0, 0, 0, 22792, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350739, 6996, 1, 0, 0, 0, 22793, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350740, 6996, 2, 0, 0, 0, 22793, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350741, 7005, 1, 0, 0, 0, 22794, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350742, 7005, 2, 0, 0, 0, 22794, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350743, 6993, 2, 0, 0, 0, 22795, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350744, 6996, 1, 0, 0, 0, 22795, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350745, 6996, 1, 0, 0, 0, 22796, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350746, 6996, 2, 0, 0, 0, 22796, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350747, 6996, 1, 0, 0, 0, 22797, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350748, 6996, 2, 0, 0, 0, 22797, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350749, 6999, 2, 0, 0, 0, 22798, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350750, 7000, 1, 0, 0, 0, 22798, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350751, 6995, 2, 0, 0, 0, 22799, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350752, 6996, 1, 0, 0, 0, 22799, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350753, 6996, 1, 0, 0, 0, 22800, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350754, 6996, 2, 0, 0, 0, 22800, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350755, 6993, 1, 0, 0, 0, 22801, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350756, 7006, 2, 0, 0, 0, 22801, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350757, 6993, 2, 0, 0, 0, 22802, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350758, 6996, 1, 0, 0, 0, 22802, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350759, 6993, 1, 0, 0, 0, 22803, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350760, 7007, 2, 0, 0, 0, 22803, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350761, 6999, 2, 0, 0, 0, 22804, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350762, 7000, 1, 0, 0, 0, 22804, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350763, 7000, 1, 0, 0, 0, 22805, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350764, 7000, 2, 0, 0, 0, 22805, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350765, 7000, 1, 0, 0, 0, 22806, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350766, 7001, 2, 0, 0, 0, 22806, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350767, 7000, 1, 0, 0, 0, 22807, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350768, 7001, 2, 0, 0, 0, 22807, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350769, 6993, 2, 0, 0, 0, 22808, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350770, 6996, 1, 0, 0, 0, 22808, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350771, 6996, 1, 0, 0, 0, 22809, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350772, 6996, 2, 0, 0, 0, 22809, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350773, 6999, 2, 0, 0, 0, 22810, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350774, 7000, 1, 0, 0, 0, 22810, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350775, 6999, 2, 0, 0, 0, 22811, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350776, 7000, 1, 0, 0, 0, 22811, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350777, 6993, 2, 0, 0, 0, 22812, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350778, 6996, 1, 0, 0, 0, 22812, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350779, 7000, 1, 0, 0, 0, 22813, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350780, 7001, 2, 0, 0, 0, 22813, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350781, 7000, 1, 0, 0, 0, 22814, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350782, 7000, 2, 0, 0, 0, 22814, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350783, 6995, 2, 0, 0, 0, 22815, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350784, 6996, 1, 0, 0, 0, 22815, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350785, 6993, 2, 0, 0, 0, 22816, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350786, 6996, 1, 0, 0, 0, 22816, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350787, 6999, 2, 0, 0, 0, 22817, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350788, 7000, 1, 0, 0, 0, 22817, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350789, 6996, 1, 0, 0, 0, 22818, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350790, 6996, 2, 0, 0, 0, 22818, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350791, 6993, 2, 0, 0, 0, 22819, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350792, 6996, 1, 0, 0, 0, 22819, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350793, 6996, 1, 0, 0, 0, 22820, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350794, 6996, 2, 0, 0, 0, 22820, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350795, 7000, 1, 0, 0, 0, 22821, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350796, 7001, 2, 0, 0, 0, 22821, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350797, 6996, 1, 0, 0, 0, 22822, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350798, 6996, 2, 0, 0, 0, 22822, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350799, 6993, 1, 0, 0, 0, 22823, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350800, 7003, 2, 0, 0, 0, 22823, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350801, 7000, 1, 0, 0, 0, 22824, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350802, 7001, 2, 0, 0, 0, 22824, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350803, 7008, 1, 0, 0, 0, 22824, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (350804, 7008, 2, 0, 0, 0, 22824, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (350805, 7000, 1, 0, 0, 0, 22825, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350806, 7001, 2, 0, 0, 0, 22825, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350807, 6993, 1, 0, 0, 0, 22826, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350808, 7009, 2, 0, 0, 0, 22826, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350809, 6996, 1, 0, 0, 0, 22827, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350810, 6996, 2, 0, 0, 0, 22827, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350811, 6996, 1, 0, 0, 0, 22828, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350812, 6996, 2, 0, 0, 0, 22828, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350813, 7005, 1, 0, 0, 0, 22829, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350814, 7005, 2, 0, 0, 0, 22829, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350815, 7000, 1, 0, 0, 0, 22830, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350816, 7001, 2, 0, 0, 0, 22830, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350817, 7000, 1, 0, 0, 0, 22831, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350818, 7001, 2, 0, 0, 0, 22831, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350819, 6993, 2, 0, 0, 0, 22832, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350820, 6996, 1, 0, 0, 0, 22832, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350821, 7005, 1, 0, 0, 0, 22833, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350822, 7005, 2, 0, 0, 0, 22833, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350823, 6993, 2, 0, 0, 0, 22834, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350824, 6996, 1, 0, 0, 0, 22834, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350825, 6996, 1, 0, 0, 0, 22835, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350826, 6996, 2, 0, 0, 0, 22835, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350827, 6996, 1, 0, 0, 0, 22836, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350828, 6996, 2, 0, 0, 0, 22836, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350829, 6993, 2, 0, 0, 0, 22837, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350830, 6996, 1, 0, 0, 0, 22837, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350831, 7000, 1, 0, 0, 0, 22838, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350832, 7001, 2, 0, 0, 0, 22838, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350833, 7000, 1, 0, 0, 0, 22839, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350834, 7001, 2, 0, 0, 0, 22839, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350835, 6996, 1, 0, 0, 0, 22840, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350836, 6996, 2, 0, 0, 0, 22840, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350837, 7000, 1, 0, 0, 0, 22841, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350838, 7001, 2, 0, 0, 0, 22841, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350839, 7000, 1, 0, 0, 0, 22842, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350840, 7001, 2, 0, 0, 0, 22842, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350841, 7000, 1, 0, 0, 0, 22843, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350842, 7001, 2, 0, 0, 0, 22843, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350843, 7010, 1, 0, 0, 0, 22843, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (350844, 7010, 2, 0, 0, 0, 22843, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (350845, 7000, 1, 0, 0, 0, 22844, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350846, 7001, 2, 0, 0, 0, 22844, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350847, 6996, 1, 0, 0, 0, 22845, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350848, 6996, 2, 0, 0, 0, 22845, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350849, 7000, 1, 0, 0, 0, 22846, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350850, 7001, 2, 0, 0, 0, 22846, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350851, 6996, 1, 0, 0, 0, 22847, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350852, 6996, 2, 0, 0, 0, 22847, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350853, 7000, 1, 0, 0, 0, 22848, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350854, 7001, 2, 0, 0, 0, 22848, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350855, 6993, 2, 0, 0, 0, 22849, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350856, 6996, 1, 0, 0, 0, 22849, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350857, 6993, 2, 0, 0, 0, 22850, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350858, 6996, 1, 0, 0, 0, 22850, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350859, 6996, 1, 0, 0, 0, 22851, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350860, 6996, 2, 0, 0, 0, 22851, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350861, 6996, 1, 0, 0, 0, 22852, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350862, 6996, 2, 0, 0, 0, 22852, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350863, 7000, 1, 0, 0, 0, 22853, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350864, 7001, 2, 0, 0, 0, 22853, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350865, 6993, 2, 0, 0, 0, 22854, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350866, 6996, 1, 0, 0, 0, 22854, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350867, 7000, 1, 0, 0, 0, 22855, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350868, 7001, 2, 0, 0, 0, 22855, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350869, 7000, 1, 0, 0, 0, 22856, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350870, 7001, 2, 0, 0, 0, 22856, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350871, 7000, 1, 0, 0, 0, 22857, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350872, 7001, 2, 0, 0, 0, 22857, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350873, 7000, 1, 0, 0, 0, 22858, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350874, 7001, 2, 0, 0, 0, 22858, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350875, 7000, 1, 0, 0, 0, 22859, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350876, 7001, 2, 0, 0, 0, 22859, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350877, 7011, 1, 0, 0, 0, 22860, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350878, 7011, 2, 0, 0, 0, 22860, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350879, 6996, 1, 0, 0, 0, 22861, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350880, 6996, 2, 0, 0, 0, 22861, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350881, 6993, 2, 0, 0, 0, 22862, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350882, 6996, 1, 0, 0, 0, 22862, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350883, 7000, 1, 0, 0, 0, 22863, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350884, 7001, 2, 0, 0, 0, 22863, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350885, 6996, 1, 0, 0, 0, 22864, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350886, 6996, 2, 0, 0, 0, 22864, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350887, 7000, 1, 0, 0, 0, 22865, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350888, 7000, 2, 0, 0, 0, 22865, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350889, 7000, 1, 0, 0, 0, 22866, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350890, 7001, 2, 0, 0, 0, 22866, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350891, 7012, 2, 0, 0, 0, 22866, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (350892, 7000, 1, 0, 0, 0, 22867, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350893, 7001, 2, 0, 0, 0, 22867, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350894, 7013, 1, 0, 0, 0, 22867, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (350895, 7014, 2, 0, 0, 0, 22867, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (350896, 7000, 1, 0, 0, 0, 22868, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350897, 7001, 2, 0, 0, 0, 22868, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350898, 7000, 1, 0, 0, 0, 22869, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350899, 7000, 2, 0, 0, 0, 22869, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350900, 7000, 1, 0, 0, 0, 22870, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350901, 7001, 2, 0, 0, 0, 22870, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350902, 7000, 1, 0, 0, 0, 22871, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350903, 7000, 2, 0, 0, 0, 22871, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350904, 7015, 2, 0, 0, 0, 22871, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (350905, 6996, 1, 0, 0, 0, 22872, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (350906, 6996, 2, 0, 0, 0, 22872, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350907, 7016, 1, 0, 0, 0, 22872, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350908, 7016, 2, 0, 0, 0, 22872, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (350909, 6993, 2, 0, 0, 0, 22873, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350910, 6996, 1, 0, 0, 0, 22873, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350911, 7016, 1, 0, 0, 0, 22873, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (350912, 7016, 2, 0, 0, 0, 22873, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (350913, 6996, 1, 0, 0, 0, 22874, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350914, 6996, 2, 0, 0, 0, 22874, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350915, 7016, 1, 0, 0, 0, 22874, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (350916, 7016, 2, 0, 0, 0, 22874, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (350917, 7000, 1, 0, 0, 0, 22875, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350918, 7001, 2, 0, 0, 0, 22875, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350919, 7000, 1, 0, 0, 0, 22876, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350920, 7001, 2, 0, 0, 0, 22876, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350921, 6996, 1, 0, 0, 0, 22877, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350922, 6996, 2, 0, 0, 0, 22877, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350923, 7000, 1, 0, 0, 0, 22878, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350924, 7000, 2, 0, 0, 0, 22878, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350925, 6996, 1, 0, 0, 0, 22879, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350926, 7006, 2, 0, 0, 0, 22879, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350927, 7000, 1, 0, 0, 0, 22880, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350928, 7001, 2, 0, 0, 0, 22880, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350929, 6993, 2, 0, 0, 0, 22881, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350930, 6996, 1, 0, 0, 0, 22881, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350931, 7000, 1, 0, 0, 0, 22882, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350932, 7000, 2, 0, 0, 0, 22882, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350933, 6993, 2, 0, 0, 0, 22883, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350934, 6996, 1, 0, 0, 0, 22883, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350935, 6996, 1, 0, 0, 0, 22884, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350936, 6996, 2, 0, 0, 0, 22884, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350937, 7000, 1, 0, 0, 0, 22885, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350938, 7001, 2, 0, 0, 0, 22885, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350939, 7017, 1, 0, 0, 0, 22886, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350940, 7018, 2, 0, 0, 0, 22886, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350941, 7000, 1, 0, 0, 0, 22887, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350942, 7001, 2, 0, 0, 0, 22887, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350943, 6993, 2, 0, 0, 0, 22888, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350944, 6996, 1, 0, 0, 0, 22888, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350945, 7000, 1, 0, 0, 0, 22889, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350946, 7000, 2, 0, 0, 0, 22889, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350947, 6996, 1, 0, 0, 0, 22890, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350948, 6996, 2, 0, 0, 0, 22890, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350949, 7000, 1, 0, 0, 0, 22891, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350950, 7001, 2, 0, 0, 0, 22891, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350951, 7000, 1, 0, 0, 0, 22892, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350952, 7001, 2, 0, 0, 0, 22892, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350953, 7000, 1, 0, 0, 0, 22893, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350954, 7001, 2, 0, 0, 0, 22893, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350955, 7000, 1, 0, 0, 0, 22894, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350956, 7001, 2, 0, 0, 0, 22894, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350957, 7005, 1, 0, 0, 0, 22895, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350958, 7005, 2, 0, 0, 0, 22895, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350959, 7000, 1, 0, 0, 0, 22896, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350960, 7000, 2, 0, 0, 0, 22896, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350961, 6996, 1, 0, 0, 0, 22897, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350962, 6996, 2, 0, 0, 0, 22897, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350963, 6996, 1, 0, 0, 0, 22898, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350964, 6996, 2, 0, 0, 0, 22898, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350965, 7011, 2, 0, 0, 0, 22899, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350966, 7019, 1, 0, 0, 0, 22899, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350967, 7000, 1, 0, 0, 0, 22900, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350968, 7001, 2, 0, 0, 0, 22900, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350969, 7000, 1, 0, 0, 0, 22901, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350970, 7000, 2, 0, 0, 0, 22901, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350971, 7000, 1, 0, 0, 0, 22902, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350972, 7000, 2, 0, 0, 0, 22902, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350973, 7000, 1, 0, 0, 0, 22903, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350974, 7000, 2, 0, 0, 0, 22903, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350975, 7005, 1, 0, 0, 0, 22904, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350976, 7005, 2, 0, 0, 0, 22904, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350977, 6993, 1, 0, 0, 0, 22905, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350978, 6993, 2, 0, 0, 0, 22905, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350979, 7000, 1, 0, 0, 0, 22906, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350980, 7000, 2, 0, 0, 0, 22906, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350981, 7000, 1, 0, 0, 0, 22907, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350982, 7000, 2, 0, 0, 0, 22907, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350983, 7020, 1, 0, 0, 0, 22907, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (350984, 7020, 2, 0, 0, 0, 22907, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (350985, 7000, 1, 0, 0, 0, 22908, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350986, 7000, 2, 0, 0, 0, 22908, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350987, 7000, 1, 0, 0, 0, 22909, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350988, 7000, 2, 0, 0, 0, 22909, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350989, 7000, 1, 0, 0, 0, 22910, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350990, 7000, 2, 0, 0, 0, 22910, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350991, 6996, 1, 0, 0, 0, 22911, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350992, 6996, 2, 0, 0, 0, 22911, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350993, 6996, 1, 0, 0, 0, 22912, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350994, 6996, 2, 0, 0, 0, 22912, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350995, 7000, 1, 0, 0, 0, 22913, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350996, 7000, 2, 0, 0, 0, 22913, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350997, 7000, 1, 0, 0, 0, 22914, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350998, 7000, 2, 0, 0, 0, 22914, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (350999, 7000, 1, 0, 0, 0, 22915, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351000, 7000, 2, 0, 0, 0, 22915, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351001, 6993, 2, 0, 0, 0, 22916, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351002, 6996, 1, 0, 0, 0, 22916, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351003, 6996, 1, 0, 0, 0, 22917, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351004, 7021, 2, 0, 0, 0, 22917, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351005, 6993, 1, 0, 0, 0, 22918, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351006, 6993, 2, 0, 0, 0, 22918, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351007, 7000, 1, 0, 0, 0, 22919, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351008, 7000, 2, 0, 0, 0, 22919, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351009, 7000, 1, 0, 0, 0, 22920, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351010, 7000, 2, 0, 0, 0, 22920, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351011, 7000, 1, 0, 0, 0, 22921, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351012, 7001, 2, 0, 0, 0, 22921, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351013, 6996, 1, 0, 0, 0, 22922, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351014, 6996, 2, 0, 0, 0, 22922, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351015, 7000, 1, 0, 0, 0, 22923, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351016, 7000, 2, 0, 0, 0, 22923, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351017, 7000, 1, 0, 0, 0, 22924, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351018, 7000, 2, 0, 0, 0, 22924, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351019, 6996, 1, 0, 0, 0, 22925, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351020, 6996, 2, 0, 0, 0, 22925, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351021, 7000, 1, 0, 0, 0, 22926, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351022, 7000, 2, 0, 0, 0, 22926, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351023, 6996, 1, 0, 0, 0, 22927, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351024, 6996, 2, 0, 0, 0, 22927, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351025, 6996, 1, 0, 0, 0, 22928, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351026, 6996, 2, 0, 0, 0, 22928, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351027, 7022, 1, 0, 0, 0, 22929, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351028, 7022, 2, 0, 0, 0, 22929, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351029, 7000, 1, 0, 0, 0, 22930, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351030, 7000, 2, 0, 0, 0, 22930, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351031, 7022, 1, 0, 0, 0, 22931, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351032, 7022, 2, 0, 0, 0, 22931, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351033, 6996, 1, 0, 0, 0, 22932, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351034, 6996, 2, 0, 0, 0, 22932, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351035, 6996, 1, 0, 0, 0, 22933, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351036, 6996, 2, 0, 0, 0, 22933, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351037, 7000, 1, 0, 0, 0, 22934, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351038, 7000, 2, 0, 0, 0, 22934, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351039, 6996, 1, 0, 0, 0, 22935, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351040, 6996, 2, 0, 0, 0, 22935, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351041, 7023, 1, 0, 0, 0, 22936, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351042, 7023, 2, 0, 0, 0, 22936, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351043, 6996, 1, 0, 0, 0, 22937, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351044, 6996, 2, 0, 0, 0, 22937, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351045, 6996, 1, 0, 0, 0, 22938, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351046, 6996, 2, 0, 0, 0, 22938, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351047, 6996, 1, 0, 0, 0, 22939, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351048, 6996, 2, 0, 0, 0, 22939, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351049, 6996, 1, 0, 0, 0, 22940, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351050, 6996, 2, 0, 0, 0, 22940, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351051, 7000, 1, 0, 0, 0, 22941, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351052, 7000, 2, 0, 0, 0, 22941, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351053, 6996, 1, 0, 0, 0, 22942, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351054, 6996, 2, 0, 0, 0, 22942, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351055, 6996, 1, 0, 0, 0, 22943, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351056, 6996, 2, 0, 0, 0, 22943, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351057, 6996, 1, 0, 0, 0, 22944, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351058, 6996, 2, 0, 0, 0, 22944, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351059, 6996, 1, 0, 0, 0, 22945, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351060, 6996, 2, 0, 0, 0, 22945, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351061, 6996, 1, 0, 0, 0, 22946, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351062, 6996, 2, 0, 0, 0, 22946, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351063, 7021, 1, 0, 0, 0, 22947, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351064, 7021, 2, 0, 0, 0, 22947, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351065, 6996, 1, 0, 0, 0, 22948, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351066, 6996, 2, 0, 0, 0, 22948, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351067, 6996, 1, 0, 0, 0, 22949, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351068, 6996, 2, 0, 0, 0, 22949, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351069, 6996, 1, 0, 0, 0, 22950, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351070, 6996, 2, 0, 0, 0, 22950, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351071, 7000, 1, 0, 0, 0, 22951, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351072, 7000, 2, 0, 0, 0, 22951, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351073, 7024, 1, 0, 0, 0, 22951, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351074, 7024, 2, 0, 0, 0, 22951, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351075, 7000, 1, 0, 0, 0, 22952, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351076, 7000, 2, 0, 0, 0, 22952, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351077, 7025, 1, 0, 0, 0, 22952, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351078, 7026, 2, 0, 0, 0, 22952, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351079, 7000, 1, 0, 0, 0, 22953, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351080, 7000, 2, 0, 0, 0, 22953, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351081, 7025, 1, 0, 0, 0, 22953, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351082, 7026, 2, 0, 0, 0, 22953, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351083, 7000, 1, 0, 0, 0, 22954, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351084, 7000, 2, 0, 0, 0, 22954, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351085, 6996, 1, 0, 0, 0, 22955, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351086, 6996, 2, 0, 0, 0, 22955, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351087, 7000, 1, 0, 0, 0, 22956, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351088, 7000, 2, 0, 0, 0, 22956, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351089, 7027, 2, 0, 0, 0, 22956, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351090, 7000, 1, 0, 0, 0, 22957, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351091, 7000, 2, 0, 0, 0, 22957, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351092, 6996, 1, 0, 0, 0, 22958, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351093, 7028, 2, 0, 0, 0, 22958, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351094, 7029, 2, 0, 0, 0, 22958, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351095, 6996, 1, 0, 0, 0, 22959, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351096, 6996, 2, 0, 0, 0, 22959, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351097, 6996, 1, 0, 0, 0, 22960, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351098, 6996, 2, 0, 0, 0, 22960, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351099, 7000, 1, 0, 0, 0, 22961, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351100, 7000, 2, 0, 0, 0, 22961, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351101, 7023, 1, 0, 0, 0, 22962, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351102, 7023, 2, 0, 0, 0, 22962, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351103, 7000, 1, 0, 0, 0, 22963, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351104, 7000, 2, 0, 0, 0, 22963, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351105, 6996, 1, 0, 0, 0, 22964, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351106, 6996, 2, 0, 0, 0, 22964, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351107, 7023, 1, 0, 0, 0, 22965, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351108, 7023, 2, 0, 0, 0, 22965, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351109, 6996, 1, 0, 0, 0, 22966, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351110, 6996, 2, 0, 0, 0, 22966, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351111, 7000, 1, 0, 0, 0, 22967, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351112, 7000, 2, 0, 0, 0, 22967, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351113, 6996, 1, 0, 0, 0, 22968, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351114, 6996, 2, 0, 0, 0, 22968, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351115, 7000, 1, 0, 0, 0, 22969, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351116, 7000, 2, 0, 0, 0, 22969, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351117, 6996, 1, 0, 0, 0, 22970, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351118, 6996, 2, 0, 0, 0, 22970, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351119, 6996, 1, 0, 0, 0, 22971, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351120, 6996, 2, 0, 0, 0, 22971, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351121, 7017, 1, 0, 0, 0, 22972, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351122, 7018, 2, 0, 0, 0, 22972, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351123, 7018, 1, 0, 0, 0, 22973, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351124, 7018, 2, 0, 0, 0, 22973, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351125, 7011, 2, 0, 0, 0, 22974, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351126, 7019, 1, 0, 0, 0, 22974, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351127, 7030, 1, 0, 0, 0, 22975, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351128, 7030, 2, 0, 0, 0, 22975, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351129, 7017, 1, 0, 0, 0, 22976, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351130, 7017, 2, 0, 0, 0, 22976, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351131, 7000, 1, 0, 0, 0, 22977, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351132, 7000, 2, 0, 0, 0, 22977, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351133, 7011, 2, 0, 0, 0, 22978, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351134, 7019, 1, 0, 0, 0, 22978, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351135, 7031, 2, 0, 0, 0, 22978, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351136, 7000, 1, 0, 0, 0, 22979, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351137, 7000, 2, 0, 0, 0, 22979, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351138, 7000, 1, 0, 0, 0, 22980, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351139, 7000, 2, 0, 0, 0, 22980, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351140, 7000, 1, 0, 0, 0, 22981, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351141, 7000, 2, 0, 0, 0, 22981, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351142, 6998, 1, 0, 0, 0, 22982, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351143, 6998, 2, 0, 0, 0, 22982, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351144, 6996, 1, 0, 0, 0, 22983, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351145, 6996, 2, 0, 0, 0, 22983, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351146, 6996, 1, 0, 0, 0, 22984, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351147, 6996, 2, 0, 0, 0, 22984, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351148, 7000, 1, 0, 0, 0, 22985, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351149, 7000, 2, 0, 0, 0, 22985, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351150, 6996, 1, 0, 0, 0, 22986, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351151, 6996, 2, 0, 0, 0, 22986, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351152, 7000, 1, 0, 0, 0, 22987, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351153, 7000, 2, 0, 0, 0, 22987, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351154, 7000, 1, 0, 0, 0, 22988, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351155, 7000, 2, 0, 0, 0, 22988, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351156, 6993, 2, 0, 0, 0, 22989, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351157, 6996, 1, 0, 0, 0, 22989, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351158, 7000, 1, 0, 0, 0, 22990, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351159, 7000, 2, 0, 0, 0, 22990, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351160, 7011, 2, 0, 0, 0, 22991, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351161, 7019, 1, 0, 0, 0, 22991, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351162, 7000, 1, 0, 0, 0, 22992, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351163, 7000, 2, 0, 0, 0, 22992, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351164, 7011, 2, 0, 0, 0, 22993, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351165, 7019, 1, 0, 0, 0, 22993, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351166, 6996, 1, 0, 0, 0, 22994, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351167, 6996, 2, 0, 0, 0, 22994, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351168, 7000, 1, 0, 0, 0, 22995, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351169, 7000, 2, 0, 0, 0, 22995, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351170, 6996, 1, 0, 0, 0, 22996, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351171, 6996, 2, 0, 0, 0, 22996, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351172, 6996, 1, 0, 0, 0, 22997, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351173, 6996, 2, 0, 0, 0, 22997, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351174, 7000, 1, 0, 0, 0, 22998, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351175, 7000, 2, 0, 0, 0, 22998, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351176, 7018, 1, 0, 0, 0, 22999, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351177, 7018, 2, 0, 0, 0, 22999, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351178, 7017, 1, 0, 0, 0, 23000, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351179, 7018, 2, 0, 0, 0, 23000, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351180, 7011, 2, 0, 0, 0, 23001, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351181, 7019, 1, 0, 0, 0, 23001, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351182, 6996, 1, 0, 0, 0, 23002, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351183, 6996, 2, 0, 0, 0, 23002, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351184, 7000, 1, 0, 0, 0, 23003, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351185, 7000, 2, 0, 0, 0, 23003, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351186, 6996, 1, 0, 0, 0, 23004, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351187, 6996, 2, 0, 0, 0, 23004, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351188, 7000, 1, 0, 0, 0, 23005, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351189, 7000, 2, 0, 0, 0, 23005, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351190, 7005, 1, 0, 0, 0, 23006, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351191, 7021, 2, 0, 0, 0, 23006, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351192, 7000, 1, 0, 0, 0, 23007, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351193, 7000, 2, 0, 0, 0, 23007, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351194, 7000, 1, 0, 0, 0, 23008, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351195, 7000, 2, 0, 0, 0, 23008, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351196, 7000, 1, 0, 0, 0, 23009, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351197, 7000, 2, 0, 0, 0, 23009, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351198, 7000, 1, 0, 0, 0, 23010, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351199, 7000, 2, 0, 0, 0, 23010, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351200, 6996, 1, 0, 0, 0, 23011, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351201, 6996, 2, 0, 0, 0, 23011, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351202, 6996, 1, 0, 0, 0, 23012, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351203, 6996, 2, 0, 0, 0, 23012, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351204, 6996, 1, 0, 0, 0, 23013, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351205, 6996, 2, 0, 0, 0, 23013, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351206, 6996, 1, 0, 0, 0, 23014, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351207, 6996, 2, 0, 0, 0, 23014, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351208, 7000, 1, 0, 0, 0, 23015, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351209, 7000, 2, 0, 0, 0, 23015, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351210, 7023, 1, 0, 0, 0, 23016, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351211, 7023, 2, 0, 0, 0, 23016, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351212, 6996, 1, 0, 0, 0, 23017, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351213, 6996, 2, 0, 0, 0, 23017, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351214, 6996, 1, 0, 0, 0, 23018, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351215, 6996, 2, 0, 0, 0, 23018, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351216, 7000, 1, 0, 0, 0, 23019, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351217, 7000, 2, 0, 0, 0, 23019, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351218, 6996, 1, 0, 0, 0, 23020, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351219, 6996, 2, 0, 0, 0, 23020, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351220, 6996, 1, 0, 0, 0, 23021, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351221, 6996, 2, 0, 0, 0, 23021, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351222, 7000, 1, 0, 0, 0, 23022, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351223, 7000, 2, 0, 0, 0, 23022, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351224, 6996, 1, 0, 0, 0, 23023, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351225, 6996, 2, 0, 0, 0, 23023, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351226, 6996, 1, 0, 0, 0, 23024, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351227, 6996, 2, 0, 0, 0, 23024, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351228, 7023, 1, 0, 0, 0, 23025, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351229, 7023, 2, 0, 0, 0, 23025, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351230, 7021, 1, 0, 0, 0, 23026, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351231, 7021, 2, 0, 0, 0, 23026, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351232, 6996, 1, 0, 0, 0, 23027, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351233, 6996, 2, 0, 0, 0, 23027, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351234, 7032, 1, 0, 0, 0, 23028, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351235, 7032, 2, 0, 0, 0, 23028, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351236, 7021, 1, 0, 0, 0, 23029, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351237, 7021, 2, 0, 0, 0, 23029, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351238, 6996, 1, 0, 0, 0, 23030, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351239, 6996, 2, 0, 0, 0, 23030, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351240, 7000, 1, 0, 0, 0, 23031, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351241, 7000, 2, 0, 0, 0, 23031, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351242, 7011, 2, 0, 0, 0, 23032, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351243, 7019, 1, 0, 0, 0, 23032, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351244, 7017, 1, 0, 0, 0, 23033, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351245, 7018, 2, 0, 0, 0, 23033, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351246, 7033, 2, 0, 0, 0, 23033, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351247, 7018, 1, 0, 0, 0, 23034, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351248, 7018, 2, 0, 0, 0, 23034, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351249, 7033, 2, 0, 0, 0, 23034, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351250, 7018, 1, 0, 0, 0, 23035, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351251, 7018, 2, 0, 0, 0, 23035, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351252, 7033, 2, 0, 0, 0, 23035, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351253, 7017, 1, 0, 0, 0, 23036, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351254, 7017, 2, 0, 0, 0, 23036, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351255, 7000, 1, 0, 0, 0, 23037, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351256, 7000, 2, 0, 0, 0, 23037, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351257, 7023, 1, 0, 0, 0, 23038, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351258, 7023, 2, 0, 0, 0, 23038, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351259, 6996, 1, 0, 0, 0, 23039, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351260, 6996, 2, 0, 0, 0, 23039, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351261, 6996, 1, 0, 0, 0, 23040, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351262, 6996, 2, 0, 0, 0, 23040, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351263, 6996, 1, 0, 0, 0, 23041, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351264, 6996, 2, 0, 0, 0, 23041, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351265, 6996, 1, 0, 0, 0, 23042, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351266, 6996, 2, 0, 0, 0, 23042, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351267, 7021, 1, 0, 0, 0, 23043, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351268, 7021, 2, 0, 0, 0, 23043, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351269, 7021, 1, 0, 0, 0, 23044, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351270, 7021, 2, 0, 0, 0, 23044, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351271, 7021, 1, 0, 0, 0, 23045, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351272, 7021, 2, 0, 0, 0, 23045, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351273, 6996, 1, 0, 0, 0, 23046, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351274, 6996, 2, 0, 0, 0, 23046, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351275, 7000, 1, 0, 0, 0, 23047, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351276, 7000, 2, 0, 0, 0, 23047, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351277, 7015, 1, 0, 0, 0, 23047, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351278, 7015, 2, 0, 0, 0, 23047, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351279, 7005, 1, 0, 0, 0, 23048, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351280, 7005, 2, 0, 0, 0, 23048, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351281, 6996, 1, 0, 0, 0, 23049, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351282, 6996, 2, 0, 0, 0, 23049, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351283, 7000, 1, 0, 0, 0, 23050, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351284, 7000, 2, 0, 0, 0, 23050, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351285, 6996, 1, 0, 0, 0, 23051, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351286, 6996, 2, 0, 0, 0, 23051, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351287, 6996, 1, 0, 0, 0, 23052, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351288, 6996, 2, 0, 0, 0, 23052, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351289, 6996, 1, 0, 0, 0, 23053, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351290, 6996, 2, 0, 0, 0, 23053, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351291, 6996, 1, 0, 0, 0, 23054, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351292, 6996, 2, 0, 0, 0, 23054, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351293, 7000, 1, 0, 0, 0, 23055, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351294, 7000, 2, 0, 0, 0, 23055, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351295, 7000, 1, 0, 0, 0, 23056, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351296, 7000, 2, 0, 0, 0, 23056, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351297, 7018, 1, 0, 0, 0, 23057, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351298, 7018, 2, 0, 0, 0, 23057, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351299, 7033, 2, 0, 0, 0, 23057, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351300, 7017, 1, 0, 0, 0, 23058, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351301, 7018, 2, 0, 0, 0, 23058, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351302, 7000, 1, 0, 0, 0, 23059, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351303, 7000, 2, 0, 0, 0, 23059, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351304, 6996, 1, 0, 0, 0, 23060, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351305, 6996, 2, 0, 0, 0, 23060, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351306, 7000, 1, 0, 0, 0, 23061, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351307, 7000, 2, 0, 0, 0, 23061, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351308, 7000, 1, 0, 0, 0, 23062, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351309, 7000, 2, 0, 0, 0, 23062, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351310, 7000, 1, 0, 0, 0, 23063, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351311, 7000, 2, 0, 0, 0, 23063, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351312, 7000, 1, 0, 0, 0, 23064, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351313, 7000, 2, 0, 0, 0, 23064, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351314, 7000, 1, 0, 0, 0, 23065, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351315, 7000, 2, 0, 0, 0, 23065, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351316, 7011, 1, 0, 0, 0, 23066, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351317, 7011, 2, 0, 0, 0, 23066, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351318, 7034, 1, 0, 0, 0, 23066, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351319, 7034, 2, 0, 0, 0, 23066, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351320, 6996, 1, 0, 0, 0, 23067, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351321, 6996, 2, 0, 0, 0, 23067, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351322, 6996, 1, 0, 0, 0, 23068, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351323, 6996, 2, 0, 0, 0, 23068, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351324, 6996, 1, 0, 0, 0, 23069, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351325, 6996, 2, 0, 0, 0, 23069, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351326, 7000, 1, 0, 0, 0, 23070, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351327, 7000, 2, 0, 0, 0, 23070, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351328, 7000, 1, 0, 0, 0, 23071, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351329, 7000, 2, 0, 0, 0, 23071, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351330, 7000, 1, 0, 0, 0, 23072, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351331, 7000, 2, 0, 0, 0, 23072, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351332, 7000, 1, 0, 0, 0, 23073, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351333, 7000, 2, 0, 0, 0, 23073, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351334, 7000, 1, 0, 0, 0, 23074, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351335, 7000, 2, 0, 0, 0, 23074, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351336, 7000, 1, 0, 0, 0, 23075, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351337, 7000, 2, 0, 0, 0, 23075, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351338, 7000, 1, 0, 0, 0, 23076, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351339, 7000, 2, 0, 0, 0, 23076, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351340, 7035, 1, 0, 0, 0, 23076, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351341, 7035, 2, 0, 0, 0, 23076, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351342, 6996, 1, 0, 0, 0, 23077, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351343, 6996, 2, 0, 0, 0, 23077, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351344, 7000, 1, 0, 0, 0, 23078, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351345, 7000, 2, 0, 0, 0, 23078, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351346, 6996, 1, 0, 0, 0, 23079, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351347, 6996, 2, 0, 0, 0, 23079, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351348, 6996, 1, 0, 0, 0, 23080, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351349, 6996, 2, 0, 0, 0, 23080, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351350, 7000, 1, 0, 0, 0, 23081, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351351, 7000, 2, 0, 0, 0, 23081, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351352, 6996, 1, 0, 0, 0, 23082, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351353, 7032, 2, 0, 0, 0, 23082, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351354, 6996, 1, 0, 0, 0, 23083, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351355, 6996, 2, 0, 0, 0, 23083, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351356, 6996, 1, 0, 0, 0, 23084, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351357, 6996, 2, 0, 0, 0, 23084, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351358, 6996, 1, 0, 0, 0, 23085, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351359, 6996, 2, 0, 0, 0, 23085, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351360, 7000, 1, 0, 0, 0, 23086, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351361, 7000, 2, 0, 0, 0, 23086, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351362, 6996, 1, 0, 0, 0, 23087, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351363, 6996, 2, 0, 0, 0, 23087, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351364, 6996, 1, 0, 0, 0, 23088, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351365, 6996, 2, 0, 0, 0, 23088, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351366, 7000, 1, 0, 0, 0, 23089, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351367, 7000, 2, 0, 0, 0, 23089, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351368, 7000, 1, 0, 0, 0, 23090, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351369, 7000, 2, 0, 0, 0, 23090, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351370, 6996, 1, 0, 0, 0, 23091, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351371, 6996, 2, 0, 0, 0, 23091, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351372, 6996, 1, 0, 0, 0, 23092, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351373, 6996, 2, 0, 0, 0, 23092, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351374, 7000, 1, 0, 0, 0, 23093, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351375, 7000, 2, 0, 0, 0, 23093, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351376, 6996, 1, 0, 0, 0, 23094, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351377, 6996, 2, 0, 0, 0, 23094, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351378, 7018, 1, 0, 0, 0, 23095, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351379, 7018, 2, 0, 0, 0, 23095, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351380, 6996, 1, 0, 0, 0, 23096, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351381, 6996, 2, 0, 0, 0, 23096, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351382, 7000, 1, 0, 0, 0, 23097, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351383, 7000, 2, 0, 0, 0, 23097, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351384, 7000, 1, 0, 0, 0, 23098, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351385, 7000, 2, 0, 0, 0, 23098, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351386, 6996, 1, 0, 0, 0, 23099, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351387, 6996, 2, 0, 0, 0, 23099, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351388, 6996, 1, 0, 0, 0, 23100, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351389, 6996, 2, 0, 0, 0, 23100, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351390, 6996, 1, 0, 0, 0, 23101, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351391, 6996, 2, 0, 0, 0, 23101, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351392, 7000, 1, 0, 0, 0, 23102, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351393, 7000, 2, 0, 0, 0, 23102, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351394, 6996, 1, 0, 0, 0, 23103, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351395, 7032, 2, 0, 0, 0, 23103, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351396, 6996, 1, 0, 0, 0, 23104, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351397, 6996, 2, 0, 0, 0, 23104, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351398, 6996, 1, 0, 0, 0, 23105, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351399, 6996, 2, 0, 0, 0, 23105, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351400, 7000, 1, 0, 0, 0, 23106, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351401, 7000, 2, 0, 0, 0, 23106, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351402, 6996, 1, 0, 0, 0, 23107, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351403, 6996, 2, 0, 0, 0, 23107, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351404, 6996, 1, 0, 0, 0, 23108, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351405, 6996, 2, 0, 0, 0, 23108, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351406, 7000, 1, 0, 0, 0, 23109, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351407, 7000, 2, 0, 0, 0, 23109, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351408, 7000, 1, 0, 0, 0, 23110, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351409, 7000, 2, 0, 0, 0, 23110, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351410, 6996, 1, 0, 0, 0, 23111, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351411, 6996, 2, 0, 0, 0, 23111, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351412, 7032, 1, 0, 0, 0, 23112, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351413, 7032, 2, 0, 0, 0, 23112, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351414, 7000, 1, 0, 0, 0, 23113, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351415, 7000, 2, 0, 0, 0, 23113, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351416, 6996, 1, 0, 0, 0, 23114, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351417, 6996, 2, 0, 0, 0, 23114, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351418, 7000, 1, 0, 0, 0, 23115, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351419, 7000, 2, 0, 0, 0, 23115, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351420, 7000, 1, 0, 0, 0, 23116, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351421, 7000, 2, 0, 0, 0, 23116, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351422, 7000, 1, 0, 0, 0, 23117, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351423, 7000, 2, 0, 0, 0, 23117, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351424, 7000, 1, 0, 0, 0, 23118, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351425, 7000, 2, 0, 0, 0, 23118, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351426, 6996, 1, 0, 0, 0, 23119, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351427, 6996, 2, 0, 0, 0, 23119, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351428, 7000, 1, 0, 0, 0, 23120, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351429, 7000, 2, 0, 0, 0, 23120, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351430, 7011, 1, 0, 0, 0, 23121, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351431, 7011, 2, 0, 0, 0, 23121, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351432, 7000, 1, 0, 0, 0, 23122, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351433, 7000, 2, 0, 0, 0, 23122, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351434, 7000, 1, 0, 0, 0, 23123, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351435, 7000, 2, 0, 0, 0, 23123, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351436, 7005, 1, 0, 0, 0, 23124, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351437, 7005, 2, 0, 0, 0, 23124, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351438, 6996, 1, 0, 0, 0, 23125, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351439, 6996, 2, 0, 0, 0, 23125, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351440, 6996, 1, 0, 0, 0, 23126, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351441, 6996, 2, 0, 0, 0, 23126, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351442, 6996, 1, 0, 0, 0, 23127, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351443, 6996, 2, 0, 0, 0, 23127, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351444, 6996, 1, 0, 0, 0, 23128, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351445, 6996, 2, 0, 0, 0, 23128, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351446, 7000, 1, 0, 0, 0, 23129, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351447, 7000, 2, 0, 0, 0, 23129, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351448, 7011, 2, 0, 0, 0, 23130, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351449, 7019, 1, 0, 0, 0, 23130, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351450, 7017, 1, 0, 0, 0, 23131, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351451, 7018, 2, 0, 0, 0, 23131, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351452, 6996, 1, 0, 0, 0, 23132, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351453, 6996, 2, 0, 0, 0, 23132, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351454, 7000, 1, 0, 0, 0, 23133, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351455, 7000, 2, 0, 0, 0, 23133, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351456, 6996, 1, 0, 0, 0, 23134, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351457, 6996, 2, 0, 0, 0, 23134, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351458, 6996, 1, 0, 0, 0, 23135, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351459, 6996, 2, 0, 0, 0, 23135, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351460, 7000, 1, 0, 0, 0, 23136, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351461, 7000, 2, 0, 0, 0, 23136, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351462, 7000, 1, 0, 0, 0, 23137, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351463, 7000, 2, 0, 0, 0, 23137, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351464, 6996, 1, 0, 0, 0, 23138, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351465, 6996, 2, 0, 0, 0, 23138, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351466, 7000, 1, 0, 0, 0, 23139, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351467, 7000, 2, 0, 0, 0, 23139, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351468, 7000, 1, 0, 0, 0, 23140, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351469, 7000, 2, 0, 0, 0, 23140, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351470, 7000, 1, 0, 0, 0, 23141, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351471, 7000, 2, 0, 0, 0, 23141, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351472, 7000, 1, 0, 0, 0, 23142, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351473, 7000, 2, 0, 0, 0, 23142, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351474, 6996, 1, 0, 0, 0, 23143, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351475, 6996, 2, 0, 0, 0, 23143, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351476, 7021, 1, 0, 0, 0, 23144, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351477, 7021, 2, 0, 0, 0, 23144, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351478, 7000, 1, 0, 0, 0, 23145, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351479, 7000, 2, 0, 0, 0, 23145, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351480, 7000, 1, 0, 0, 0, 23146, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351481, 7000, 2, 0, 0, 0, 23146, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351482, 7000, 1, 0, 0, 0, 23147, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351483, 7000, 2, 0, 0, 0, 23147, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351484, 7000, 1, 0, 0, 0, 23148, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351485, 7000, 2, 0, 0, 0, 23148, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351486, 7000, 1, 0, 0, 0, 23149, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351487, 7000, 2, 0, 0, 0, 23149, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351488, 7000, 1, 0, 0, 0, 23150, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351489, 7000, 2, 0, 0, 0, 23150, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351490, 6996, 1, 0, 0, 0, 23151, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351491, 6996, 2, 0, 0, 0, 23151, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351492, 6996, 1, 0, 0, 0, 23152, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351493, 7036, 2, 0, 0, 0, 23152, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351494, 7000, 1, 0, 0, 0, 23153, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351495, 7000, 2, 0, 0, 0, 23153, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351496, 6996, 1, 0, 0, 0, 23154, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351497, 6996, 2, 0, 0, 0, 23154, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351498, 7000, 1, 0, 0, 0, 23155, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351499, 7000, 2, 0, 0, 0, 23155, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351500, 7000, 1, 0, 0, 0, 23156, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351501, 7000, 2, 0, 0, 0, 23156, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351502, 7000, 1, 0, 0, 0, 23157, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351503, 7000, 2, 0, 0, 0, 23157, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351504, 7000, 1, 0, 0, 0, 23158, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351505, 7000, 2, 0, 0, 0, 23158, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351506, 7005, 1, 0, 0, 0, 23159, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351507, 7005, 2, 0, 0, 0, 23159, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351508, 7000, 1, 0, 0, 0, 23160, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351509, 7000, 2, 0, 0, 0, 23160, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351510, 6996, 1, 0, 0, 0, 23161, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351511, 6996, 2, 0, 0, 0, 23161, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351512, 6996, 1, 0, 0, 0, 23162, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351513, 6996, 2, 0, 0, 0, 23162, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351514, 6996, 1, 0, 0, 0, 23163, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351515, 6996, 2, 0, 0, 0, 23163, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351516, 7000, 1, 0, 0, 0, 23164, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351517, 7000, 2, 0, 0, 0, 23164, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351518, 7000, 1, 0, 0, 0, 23165, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351519, 7000, 2, 0, 0, 0, 23165, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351520, 7000, 1, 0, 0, 0, 23166, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351521, 7000, 2, 0, 0, 0, 23166, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351522, 7000, 1, 0, 0, 0, 23167, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351523, 7000, 2, 0, 0, 0, 23167, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351524, 7000, 1, 0, 0, 0, 23168, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351525, 7000, 2, 0, 0, 0, 23168, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351526, 7017, 1, 0, 0, 0, 23169, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351527, 7037, 2, 0, 0, 0, 23169, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351528, 7038, 2, 0, 0, 0, 23169, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351529, 7018, 1, 0, 0, 0, 23170, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351530, 7018, 2, 0, 0, 0, 23170, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351531, 7000, 1, 0, 0, 0, 23171, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351532, 7000, 2, 0, 0, 0, 23171, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351533, 7000, 1, 0, 0, 0, 23172, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351534, 7000, 2, 0, 0, 0, 23172, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351535, 7000, 1, 0, 0, 0, 23173, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351536, 7000, 2, 0, 0, 0, 23173, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351537, 7039, 1, 0, 0, 0, 23173, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351538, 7040, 2, 0, 0, 0, 23173, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351539, 7000, 1, 0, 0, 0, 23174, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351540, 7000, 2, 0, 0, 0, 23174, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351541, 7000, 1, 0, 0, 0, 23175, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351542, 7000, 2, 0, 0, 0, 23175, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351543, 6998, 1, 0, 0, 0, 23176, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351544, 6998, 2, 0, 0, 0, 23176, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351545, 7000, 1, 0, 0, 0, 23177, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351546, 7000, 2, 0, 0, 0, 23177, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351547, 6996, 1, 0, 0, 0, 23178, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351548, 7041, 2, 0, 0, 0, 23178, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351549, 7042, 2, 0, 0, 0, 23178, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351550, 7000, 1, 0, 0, 0, 23179, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351551, 7000, 2, 0, 0, 0, 23179, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351552, 6996, 1, 0, 0, 0, 23180, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351553, 6996, 2, 0, 0, 0, 23180, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351554, 6996, 1, 0, 0, 0, 23181, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351555, 7043, 2, 0, 0, 0, 23181, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351556, 7044, 2, 0, 0, 0, 23181, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351557, 7000, 1, 0, 0, 0, 23182, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351558, 7000, 2, 0, 0, 0, 23182, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351559, 6996, 1, 0, 0, 0, 23183, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351560, 7043, 2, 0, 0, 0, 23183, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351561, 7000, 1, 0, 0, 0, 23184, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351562, 7000, 2, 0, 0, 0, 23184, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351563, 7023, 1, 0, 0, 0, 23185, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351564, 7023, 2, 0, 0, 0, 23185, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351565, 6996, 1, 0, 0, 0, 23186, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351566, 6996, 2, 0, 0, 0, 23186, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351567, 6996, 1, 0, 0, 0, 23187, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351568, 6996, 2, 0, 0, 0, 23187, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351569, 6996, 1, 0, 0, 0, 23188, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351570, 7045, 2, 0, 0, 0, 23188, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351571, 7000, 1, 0, 0, 0, 23189, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351572, 7000, 2, 0, 0, 0, 23189, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351573, 7000, 1, 0, 0, 0, 23190, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351574, 7000, 2, 0, 0, 0, 23190, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351575, 6996, 1, 0, 0, 0, 23191, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351576, 7043, 2, 0, 0, 0, 23191, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351577, 7000, 1, 0, 0, 0, 23192, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351578, 7000, 2, 0, 0, 0, 23192, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351579, 6996, 1, 0, 0, 0, 23193, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351580, 6996, 2, 0, 0, 0, 23193, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351581, 6996, 1, 0, 0, 0, 23194, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351582, 6996, 2, 0, 0, 0, 23194, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351583, 7000, 1, 0, 0, 0, 23195, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351584, 7000, 2, 0, 0, 0, 23195, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351585, 6996, 1, 0, 0, 0, 23196, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351586, 7046, 2, 0, 0, 0, 23196, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351587, 7047, 2, 0, 0, 0, 23196, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351588, 7000, 1, 0, 0, 0, 23197, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351589, 7000, 2, 0, 0, 0, 23197, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351590, 6996, 1, 0, 0, 0, 23198, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351591, 7042, 2, 0, 0, 0, 23198, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351592, 7048, 2, 0, 0, 0, 23198, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351593, 7049, 2, 0, 0, 0, 23198, 0, NULL, 2);
INSERT INTO `os_applicant_attr` VALUES (351594, 6996, 1, 0, 0, 0, 23199, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351595, 6996, 2, 0, 0, 0, 23199, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351596, 6996, 1, 0, 0, 0, 23200, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351597, 6996, 2, 0, 0, 0, 23200, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351598, 6996, 1, 0, 0, 0, 23201, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351599, 7043, 2, 0, 0, 0, 23201, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351600, 6996, 1, 0, 0, 0, 23202, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351601, 7043, 2, 0, 0, 0, 23202, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351602, 7000, 1, 0, 0, 0, 23203, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351603, 7000, 2, 0, 0, 0, 23203, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351604, 7000, 1, 0, 0, 0, 23204, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351605, 7000, 2, 0, 0, 0, 23204, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351606, 6996, 1, 0, 0, 0, 23205, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351607, 6996, 2, 0, 0, 0, 23205, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351608, 6996, 1, 0, 0, 0, 23206, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351609, 6996, 2, 0, 0, 0, 23206, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351610, 7000, 1, 0, 0, 0, 23207, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351611, 7000, 2, 0, 0, 0, 23207, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351612, 7005, 1, 0, 0, 0, 23208, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351613, 7005, 2, 0, 0, 0, 23208, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351614, 6996, 1, 0, 0, 0, 23209, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351615, 7050, 2, 0, 0, 0, 23209, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351616, 7051, 2, 0, 0, 0, 23209, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351617, 7052, 2, 0, 0, 0, 23209, 0, NULL, 2);
INSERT INTO `os_applicant_attr` VALUES (351618, 6996, 1, 0, 0, 0, 23210, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351619, 6996, 2, 0, 0, 0, 23210, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351620, 6996, 1, 0, 0, 0, 23211, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351621, 6996, 2, 0, 0, 0, 23211, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351622, 7000, 1, 0, 0, 0, 23212, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351623, 7000, 2, 0, 0, 0, 23212, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351624, 7000, 1, 0, 0, 0, 23213, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351625, 7000, 2, 0, 0, 0, 23213, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351626, 7000, 1, 0, 0, 0, 23214, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351627, 7000, 2, 0, 0, 0, 23214, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351628, 7000, 1, 0, 0, 0, 23215, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351629, 7000, 2, 0, 0, 0, 23215, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351630, 7000, 1, 0, 0, 0, 23216, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351631, 7000, 2, 0, 0, 0, 23216, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351632, 7000, 1, 0, 0, 0, 23217, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351633, 7000, 2, 0, 0, 0, 23217, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351634, 7000, 1, 0, 0, 0, 23218, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351635, 7000, 2, 0, 0, 0, 23218, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351636, 6996, 1, 0, 0, 0, 23219, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351637, 6996, 2, 0, 0, 0, 23219, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351638, 7000, 1, 0, 0, 0, 23220, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351639, 7000, 2, 0, 0, 0, 23220, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351640, 6996, 1, 0, 0, 0, 23221, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351641, 7036, 2, 0, 0, 0, 23221, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351642, 6996, 1, 0, 0, 0, 23222, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351643, 6996, 2, 0, 0, 0, 23222, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351644, 7000, 1, 0, 0, 0, 23223, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351645, 7000, 2, 0, 0, 0, 23223, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351646, 7000, 1, 0, 0, 0, 23224, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351647, 7000, 2, 0, 0, 0, 23224, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351648, 6996, 1, 0, 0, 0, 23225, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351649, 7028, 2, 0, 0, 0, 23225, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351650, 7053, 2, 0, 0, 0, 23225, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351651, 6996, 1, 0, 0, 0, 23226, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351652, 7028, 2, 0, 0, 0, 23226, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351653, 7054, 2, 0, 0, 0, 23226, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351654, 7000, 1, 0, 0, 0, 23227, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351655, 7000, 2, 0, 0, 0, 23227, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351656, 6996, 1, 0, 0, 0, 23228, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351657, 6996, 2, 0, 0, 0, 23228, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351658, 6996, 1, 0, 0, 0, 23229, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351659, 6996, 2, 0, 0, 0, 23229, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351660, 6996, 1, 0, 0, 0, 23230, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351661, 6996, 2, 0, 0, 0, 23230, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351662, 6996, 1, 0, 0, 0, 23231, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351663, 6996, 2, 0, 0, 0, 23231, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351664, 7000, 1, 0, 0, 0, 23232, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351665, 7000, 2, 0, 0, 0, 23232, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351666, 7000, 1, 0, 0, 0, 23233, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351667, 7000, 2, 0, 0, 0, 23233, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351668, 7000, 1, 0, 0, 0, 23234, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351669, 7000, 2, 0, 0, 0, 23234, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351670, 6996, 1, 0, 0, 0, 23235, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351671, 6996, 2, 0, 0, 0, 23235, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351672, 7000, 1, 0, 0, 0, 23236, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351673, 7000, 2, 0, 0, 0, 23236, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351674, 6996, 1, 0, 0, 0, 23237, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351675, 6996, 2, 0, 0, 0, 23237, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351676, 6996, 1, 0, 0, 0, 23238, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351677, 6996, 2, 0, 0, 0, 23238, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351678, 6996, 1, 0, 0, 0, 23239, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351679, 6996, 2, 0, 0, 0, 23239, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351680, 7000, 1, 0, 0, 0, 23240, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351681, 7000, 2, 0, 0, 0, 23240, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351682, 6996, 1, 0, 0, 0, 23241, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351683, 6996, 2, 0, 0, 0, 23241, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351684, 6996, 1, 0, 0, 0, 23242, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351685, 6996, 2, 0, 0, 0, 23242, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351686, 6998, 1, 0, 0, 0, 23243, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351687, 6998, 2, 0, 0, 0, 23243, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351688, 7000, 1, 0, 0, 0, 23244, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351689, 7000, 2, 0, 0, 0, 23244, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351690, 7030, 1, 0, 0, 0, 23245, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351691, 7030, 2, 0, 0, 0, 23245, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351692, 7018, 1, 0, 0, 0, 23246, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351693, 7018, 2, 0, 0, 0, 23246, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351694, 7017, 1, 0, 0, 0, 23247, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351695, 7055, 2, 0, 0, 0, 23247, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351696, 7011, 1, 0, 0, 0, 23248, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351697, 7011, 2, 0, 0, 0, 23248, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351698, 7011, 1, 0, 0, 0, 23249, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351699, 7011, 2, 0, 0, 0, 23249, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351700, 7017, 1, 0, 0, 0, 23250, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351701, 7018, 2, 0, 0, 0, 23250, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351702, 7011, 2, 0, 0, 0, 23251, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351703, 7019, 1, 0, 0, 0, 23251, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351704, 7018, 1, 0, 0, 0, 23252, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351705, 7018, 2, 0, 0, 0, 23252, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351706, 7011, 2, 0, 0, 0, 23253, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351707, 7019, 1, 0, 0, 0, 23253, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351708, 7030, 1, 0, 0, 0, 23254, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351709, 7030, 2, 0, 0, 0, 23254, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351710, 7017, 1, 0, 0, 0, 23255, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351711, 7055, 2, 0, 0, 0, 23255, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351712, 7018, 1, 0, 0, 0, 23256, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351713, 7018, 2, 0, 0, 0, 23256, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351714, 7017, 1, 0, 0, 0, 23257, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351715, 7018, 2, 0, 0, 0, 23257, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351716, 7017, 1, 0, 0, 0, 23258, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351717, 7056, 2, 0, 0, 0, 23258, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351718, 7017, 1, 0, 0, 0, 23259, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351719, 7017, 2, 0, 0, 0, 23259, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351720, 7017, 1, 0, 0, 0, 23260, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351721, 7017, 2, 0, 0, 0, 23260, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351722, 7017, 1, 0, 0, 0, 23261, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351723, 7017, 2, 0, 0, 0, 23261, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351724, 7017, 1, 0, 0, 0, 23262, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351725, 7017, 2, 0, 0, 0, 23262, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351726, 7000, 1, 0, 0, 0, 23263, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351727, 7000, 2, 0, 0, 0, 23263, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351728, 6996, 1, 0, 0, 0, 23264, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351729, 6996, 2, 0, 0, 0, 23264, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351730, 7000, 1, 0, 0, 0, 23265, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351731, 7000, 2, 0, 0, 0, 23265, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351732, 6996, 1, 0, 0, 0, 23266, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351733, 6996, 2, 0, 0, 0, 23266, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351734, 6996, 1, 0, 0, 0, 23267, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351735, 6996, 2, 0, 0, 0, 23267, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351736, 7000, 1, 0, 0, 0, 23268, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351737, 7000, 2, 0, 0, 0, 23268, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351738, 7000, 1, 0, 0, 0, 23269, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351739, 7000, 2, 0, 0, 0, 23269, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351740, 7000, 1, 0, 0, 0, 23270, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351741, 7000, 2, 0, 0, 0, 23270, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351742, 7000, 1, 0, 0, 0, 23271, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351743, 7000, 2, 0, 0, 0, 23271, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351744, 7011, 1, 0, 0, 0, 23272, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351745, 7011, 2, 0, 0, 0, 23272, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351746, 7000, 1, 0, 0, 0, 23273, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351747, 7000, 2, 0, 0, 0, 23273, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351748, 7017, 1, 0, 0, 0, 23274, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351749, 7038, 2, 0, 0, 0, 23274, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351750, 7057, 2, 0, 0, 0, 23274, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351751, 7000, 1, 0, 0, 0, 23275, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351752, 7000, 2, 0, 0, 0, 23275, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351753, 7011, 2, 0, 0, 0, 23276, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351754, 7019, 1, 0, 0, 0, 23276, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351755, 6998, 1, 0, 0, 0, 23277, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351756, 6998, 2, 0, 0, 0, 23277, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351757, 7000, 1, 0, 0, 0, 23278, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351758, 7000, 2, 0, 0, 0, 23278, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351759, 7000, 1, 0, 0, 0, 23279, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351760, 7000, 2, 0, 0, 0, 23279, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351761, 6996, 1, 0, 0, 0, 23280, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351762, 6996, 2, 0, 0, 0, 23280, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351763, 6996, 1, 0, 0, 0, 23281, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351764, 6996, 2, 0, 0, 0, 23281, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351765, 6996, 1, 0, 0, 0, 23282, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351766, 6996, 2, 0, 0, 0, 23282, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351767, 6996, 1, 0, 0, 0, 23283, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351768, 6996, 2, 0, 0, 0, 23283, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351769, 6996, 1, 0, 0, 0, 23284, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351770, 6996, 2, 0, 0, 0, 23284, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351771, 7017, 1, 0, 0, 0, 23285, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351772, 7018, 2, 0, 0, 0, 23285, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351773, 7030, 1, 0, 0, 0, 23286, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351774, 7030, 2, 0, 0, 0, 23286, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351775, 7011, 2, 0, 0, 0, 23287, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351776, 7019, 1, 0, 0, 0, 23287, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351777, 7000, 1, 0, 0, 0, 23288, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351778, 7000, 2, 0, 0, 0, 23288, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351779, 7000, 1, 0, 0, 0, 23289, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351780, 7000, 2, 0, 0, 0, 23289, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351781, 6996, 1, 0, 0, 0, 23290, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351782, 6996, 2, 0, 0, 0, 23290, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351783, 6996, 1, 0, 0, 0, 23291, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351784, 6996, 2, 0, 0, 0, 23291, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351785, 6996, 1, 0, 0, 0, 23292, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351786, 6996, 2, 0, 0, 0, 23292, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351787, 6996, 1, 0, 0, 0, 23293, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351788, 6996, 2, 0, 0, 0, 23293, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351789, 6996, 1, 0, 0, 0, 23294, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351790, 6996, 2, 0, 0, 0, 23294, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351791, 6996, 1, 0, 0, 0, 23295, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351792, 6996, 2, 0, 0, 0, 23295, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351793, 7018, 1, 0, 0, 0, 23296, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351794, 7018, 2, 0, 0, 0, 23296, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351795, 7011, 2, 0, 0, 0, 23297, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351796, 7019, 1, 0, 0, 0, 23297, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351797, 7030, 1, 0, 0, 0, 23298, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351798, 7030, 2, 0, 0, 0, 23298, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351799, 7017, 1, 0, 0, 0, 23299, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351800, 7018, 2, 0, 0, 0, 23299, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351801, 7017, 1, 0, 0, 0, 23300, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351802, 7017, 2, 0, 0, 0, 23300, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351803, 7000, 1, 0, 0, 0, 23301, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351804, 7000, 2, 0, 0, 0, 23301, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351805, 7000, 1, 0, 0, 0, 23302, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351806, 7000, 2, 0, 0, 0, 23302, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351807, 7000, 1, 0, 0, 0, 23303, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351808, 7000, 2, 0, 0, 0, 23303, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351809, 6996, 1, 0, 0, 0, 23304, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351810, 6996, 2, 0, 0, 0, 23304, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351811, 6996, 1, 0, 0, 0, 23305, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351812, 6996, 2, 0, 0, 0, 23305, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351813, 7000, 1, 0, 0, 0, 23306, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351814, 7000, 2, 0, 0, 0, 23306, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351815, 7000, 1, 0, 0, 0, 23307, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351816, 7000, 2, 0, 0, 0, 23307, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351817, 7000, 1, 0, 0, 0, 23308, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351818, 7000, 2, 0, 0, 0, 23308, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351819, 6996, 1, 0, 0, 0, 23309, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351820, 6996, 2, 0, 0, 0, 23309, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351821, 7000, 1, 0, 0, 0, 23310, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351822, 7000, 2, 0, 0, 0, 23310, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351823, 6996, 1, 0, 0, 0, 23311, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351824, 6996, 2, 0, 0, 0, 23311, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351825, 6996, 1, 0, 0, 0, 23312, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351826, 6996, 2, 0, 0, 0, 23312, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351827, 6996, 1, 0, 0, 0, 23313, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351828, 6996, 2, 0, 0, 0, 23313, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351829, 7000, 1, 0, 0, 0, 23314, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351830, 7000, 2, 0, 0, 0, 23314, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351831, 6996, 1, 0, 0, 0, 23315, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351832, 6996, 2, 0, 0, 0, 23315, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351833, 7000, 1, 0, 0, 0, 23316, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351834, 7000, 2, 0, 0, 0, 23316, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351835, 6996, 1, 0, 0, 0, 23317, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351836, 7032, 2, 0, 0, 0, 23317, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351837, 6996, 1, 0, 0, 0, 23318, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351838, 6996, 2, 0, 0, 0, 23318, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351839, 6996, 1, 0, 0, 0, 23319, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351840, 6996, 2, 0, 0, 0, 23319, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351841, 7011, 2, 0, 0, 0, 23320, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351842, 7019, 1, 0, 0, 0, 23320, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351843, 7019, 2, 0, 0, 0, 23320, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351844, 7030, 1, 0, 0, 0, 23321, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351845, 7030, 2, 0, 0, 0, 23321, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351846, 7058, 1, 0, 0, 0, 23321, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351847, 7058, 2, 0, 0, 0, 23321, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351848, 7011, 2, 0, 0, 0, 23322, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351849, 7019, 1, 0, 0, 0, 23322, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351850, 7019, 2, 0, 0, 0, 23322, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351851, 7017, 1, 0, 0, 0, 23323, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351852, 7017, 2, 0, 0, 0, 23323, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351853, 7018, 2, 0, 0, 0, 23323, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351854, 7011, 2, 0, 0, 0, 23324, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351855, 7019, 1, 0, 0, 0, 23324, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351856, 7019, 2, 0, 0, 0, 23324, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351857, 7017, 1, 0, 0, 0, 23325, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351858, 7017, 2, 0, 0, 0, 23325, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351859, 7056, 1, 0, 0, 0, 23325, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351860, 7056, 2, 0, 0, 0, 23325, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351861, 7017, 1, 0, 0, 0, 23326, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351862, 7017, 2, 0, 0, 0, 23326, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351863, 7018, 1, 0, 0, 0, 23326, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351864, 7018, 2, 0, 0, 0, 23326, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351865, 7000, 1, 0, 0, 0, 23327, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351866, 7000, 2, 0, 0, 0, 23327, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351867, 7030, 1, 0, 0, 0, 23328, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351868, 7030, 2, 0, 0, 0, 23328, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351869, 7011, 2, 0, 0, 0, 23329, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351870, 7019, 1, 0, 0, 0, 23329, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351871, 7011, 2, 0, 0, 0, 23330, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351872, 7019, 1, 0, 0, 0, 23330, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351873, 7019, 2, 0, 0, 0, 23330, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351874, 7030, 1, 0, 0, 0, 23331, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351875, 7030, 2, 0, 0, 0, 23331, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351876, 7058, 1, 0, 0, 0, 23331, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351877, 7058, 2, 0, 0, 0, 23331, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351878, 7017, 1, 0, 0, 0, 23332, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351879, 7017, 2, 0, 0, 0, 23332, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351880, 7018, 1, 0, 0, 0, 23332, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351881, 7018, 2, 0, 0, 0, 23332, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351882, 7017, 1, 0, 0, 0, 23333, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351883, 7017, 2, 0, 0, 0, 23333, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (351884, 7055, 2, 0, 0, 0, 23333, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351885, 7000, 1, 0, 0, 0, 23334, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351886, 7000, 2, 0, 0, 0, 23334, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351887, 7000, 1, 0, 0, 0, 23335, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351888, 7000, 2, 0, 0, 0, 23335, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351889, 6996, 1, 0, 0, 0, 23336, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351890, 6996, 2, 0, 0, 0, 23336, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351891, 6996, 1, 0, 0, 0, 23337, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351892, 6996, 2, 0, 0, 0, 23337, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351893, 6996, 1, 0, 0, 0, 23338, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351894, 6996, 2, 0, 0, 0, 23338, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351895, 6996, 1, 0, 0, 0, 23339, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351896, 6996, 2, 0, 0, 0, 23339, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351897, 6996, 1, 0, 0, 0, 23340, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351898, 6996, 2, 0, 0, 0, 23340, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351899, 6996, 1, 0, 0, 0, 23341, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351900, 6996, 2, 0, 0, 0, 23341, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351901, 7000, 1, 0, 0, 0, 23342, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351902, 7000, 2, 0, 0, 0, 23342, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351903, 7000, 1, 0, 0, 0, 23343, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351904, 7000, 2, 0, 0, 0, 23343, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351905, 6996, 1, 0, 0, 0, 23344, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351906, 6996, 2, 0, 0, 0, 23344, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351907, 7000, 1, 0, 0, 0, 23345, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351908, 7000, 2, 0, 0, 0, 23345, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351909, 6996, 1, 0, 0, 0, 23346, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351910, 6996, 2, 0, 0, 0, 23346, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351911, 7000, 1, 0, 0, 0, 23347, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351912, 7000, 2, 0, 0, 0, 23347, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351913, 7059, 1, 0, 0, 0, 23348, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351914, 7059, 2, 0, 0, 0, 23348, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351915, 7000, 1, 0, 0, 0, 23349, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351916, 7000, 2, 0, 0, 0, 23349, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351917, 7000, 1, 0, 0, 0, 23350, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351918, 7000, 2, 0, 0, 0, 23350, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351919, 6996, 1, 0, 0, 0, 23351, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351920, 6996, 2, 0, 0, 0, 23351, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351921, 6996, 1, 0, 0, 0, 23352, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351922, 6996, 2, 0, 0, 0, 23352, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351923, 6996, 1, 0, 0, 0, 23353, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351924, 6996, 2, 0, 0, 0, 23353, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351925, 6996, 1, 0, 0, 0, 23354, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351926, 6996, 2, 0, 0, 0, 23354, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351927, 6996, 1, 0, 0, 0, 23355, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351928, 6996, 2, 0, 0, 0, 23355, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351929, 6996, 1, 0, 0, 0, 23356, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351930, 6996, 2, 0, 0, 0, 23356, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351931, 6996, 1, 0, 0, 0, 23357, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351932, 6996, 2, 0, 0, 0, 23357, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351933, 7000, 1, 0, 0, 0, 23358, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351934, 7000, 2, 0, 0, 0, 23358, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351935, 6996, 1, 0, 0, 0, 23359, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351936, 6996, 2, 0, 0, 0, 23359, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351937, 6996, 1, 0, 0, 0, 23360, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351938, 6996, 2, 0, 0, 0, 23360, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351939, 6996, 1, 0, 0, 0, 23361, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351940, 6996, 2, 0, 0, 0, 23361, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351941, 7000, 1, 0, 0, 0, 23362, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351942, 7000, 2, 0, 0, 0, 23362, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351943, 7000, 1, 0, 0, 0, 23363, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351944, 7000, 2, 0, 0, 0, 23363, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351945, 7000, 1, 0, 0, 0, 23364, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351946, 7000, 2, 0, 0, 0, 23364, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351947, 7000, 1, 0, 0, 0, 23365, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351948, 7000, 2, 0, 0, 0, 23365, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351949, 7000, 1, 0, 0, 0, 23366, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351950, 7000, 2, 0, 0, 0, 23366, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351951, 7000, 1, 0, 0, 0, 23367, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351952, 7000, 2, 0, 0, 0, 23367, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351953, 7000, 1, 0, 0, 0, 23368, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351954, 7000, 2, 0, 0, 0, 23368, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351955, 7000, 1, 0, 0, 0, 23369, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351956, 7000, 2, 0, 0, 0, 23369, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351957, 7011, 2, 0, 0, 0, 23370, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351958, 7019, 1, 0, 0, 0, 23370, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351959, 6996, 1, 0, 0, 0, 23371, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351960, 6996, 2, 0, 0, 0, 23371, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351961, 7000, 1, 0, 0, 0, 23372, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351962, 7000, 2, 0, 0, 0, 23372, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351963, 7000, 1, 0, 0, 0, 23373, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351964, 7000, 2, 0, 0, 0, 23373, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351965, 7000, 1, 0, 0, 0, 23374, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351966, 7000, 2, 0, 0, 0, 23374, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351967, 7000, 1, 0, 0, 0, 23375, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351968, 7000, 2, 0, 0, 0, 23375, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351969, 7000, 1, 0, 0, 0, 23376, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351970, 7000, 2, 0, 0, 0, 23376, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351971, 6996, 1, 0, 0, 0, 23377, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351972, 6996, 2, 0, 0, 0, 23377, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351973, 7000, 1, 0, 0, 0, 23378, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351974, 7000, 2, 0, 0, 0, 23378, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351975, 7000, 1, 0, 0, 0, 23379, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351976, 7000, 2, 0, 0, 0, 23379, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351977, 7000, 1, 0, 0, 0, 23380, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351978, 7000, 2, 0, 0, 0, 23380, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351979, 6996, 1, 0, 0, 0, 23381, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351980, 6996, 2, 0, 0, 0, 23381, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351981, 7021, 1, 0, 0, 0, 23382, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351982, 7021, 2, 0, 0, 0, 23382, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351983, 6996, 1, 0, 0, 0, 23383, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351984, 6996, 2, 0, 0, 0, 23383, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351985, 7000, 1, 0, 0, 0, 23384, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351986, 7000, 2, 0, 0, 0, 23384, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351987, 7000, 1, 0, 0, 0, 23385, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351988, 7000, 2, 0, 0, 0, 23385, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351989, 6996, 1, 0, 0, 0, 23386, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351990, 6996, 2, 0, 0, 0, 23386, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351991, 7000, 1, 0, 0, 0, 23387, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351992, 7000, 2, 0, 0, 0, 23387, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351993, 7000, 1, 0, 0, 0, 23388, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351994, 7000, 2, 0, 0, 0, 23388, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351995, 7000, 1, 0, 0, 0, 23389, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351996, 7000, 2, 0, 0, 0, 23389, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351997, 7000, 1, 0, 0, 0, 23390, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351998, 7000, 2, 0, 0, 0, 23390, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (351999, 7000, 1, 0, 0, 0, 23391, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352000, 7000, 2, 0, 0, 0, 23391, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352001, 6996, 1, 0, 0, 0, 23392, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352002, 6996, 2, 0, 0, 0, 23392, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352003, 6996, 1, 0, 0, 0, 23393, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352004, 6996, 2, 0, 0, 0, 23393, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352005, 6996, 1, 0, 0, 0, 23394, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352006, 6996, 2, 0, 0, 0, 23394, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352007, 7000, 1, 0, 0, 0, 23395, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352008, 7000, 2, 0, 0, 0, 23395, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352009, 7000, 1, 0, 0, 0, 23396, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352010, 7000, 2, 0, 0, 0, 23396, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352011, 7000, 1, 0, 0, 0, 23397, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352012, 7000, 2, 0, 0, 0, 23397, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352013, 6996, 1, 0, 0, 0, 23398, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352014, 6996, 2, 0, 0, 0, 23398, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352015, 6998, 1, 0, 0, 0, 23399, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352016, 6998, 2, 0, 0, 0, 23399, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352017, 7000, 1, 0, 0, 0, 23400, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352018, 7000, 2, 0, 0, 0, 23400, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352019, 7000, 1, 0, 0, 0, 23401, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352020, 7000, 2, 0, 0, 0, 23401, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352021, 7021, 1, 0, 0, 0, 23402, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352022, 7021, 2, 0, 0, 0, 23402, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352023, 7000, 1, 0, 0, 0, 23403, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352024, 7000, 2, 0, 0, 0, 23403, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352025, 6996, 1, 0, 0, 0, 23404, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352026, 6996, 2, 0, 0, 0, 23404, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352027, 7000, 1, 0, 0, 0, 23405, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352028, 7000, 2, 0, 0, 0, 23405, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352029, 7000, 1, 0, 0, 0, 23406, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352030, 7000, 2, 0, 0, 0, 23406, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352031, 6996, 1, 0, 0, 0, 23407, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352032, 6996, 2, 0, 0, 0, 23407, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352033, 6996, 1, 0, 0, 0, 23408, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352034, 6996, 2, 0, 0, 0, 23408, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352035, 7000, 1, 0, 0, 0, 23409, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352036, 7000, 2, 0, 0, 0, 23409, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352037, 7059, 1, 0, 0, 0, 23410, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352038, 7059, 2, 0, 0, 0, 23410, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352039, 7060, 1, 0, 0, 0, 23411, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352040, 7060, 2, 0, 0, 0, 23411, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352041, 7061, 1, 0, 0, 0, 23412, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352042, 7061, 2, 0, 0, 0, 23412, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352043, 7061, 1, 0, 0, 0, 23413, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352044, 7061, 2, 0, 0, 0, 23413, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352045, 7062, 1, 0, 0, 0, 23414, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352046, 7062, 2, 0, 0, 0, 23414, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352047, 7000, 1, 0, 0, 0, 23415, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352048, 7000, 2, 0, 0, 0, 23415, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352049, 7000, 1, 0, 0, 0, 23416, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352050, 7000, 2, 0, 0, 0, 23416, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352051, 7000, 1, 0, 0, 0, 23417, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352052, 7000, 2, 0, 0, 0, 23417, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352053, 7011, 2, 0, 0, 0, 23418, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352054, 7019, 1, 0, 0, 0, 23418, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352055, 7019, 2, 0, 0, 0, 23418, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (352056, 7000, 1, 0, 0, 0, 23419, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352057, 7000, 2, 0, 0, 0, 23419, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352058, 7000, 1, 0, 0, 0, 23420, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352059, 7000, 2, 0, 0, 0, 23420, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352060, 6996, 1, 0, 0, 0, 23421, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352061, 6996, 2, 0, 0, 0, 23421, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352062, 6996, 1, 0, 0, 0, 23422, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352063, 6996, 2, 0, 0, 0, 23422, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352064, 7011, 2, 0, 0, 0, 23423, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352065, 7019, 1, 0, 0, 0, 23423, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352066, 6996, 1, 0, 0, 0, 23424, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352067, 6996, 2, 0, 0, 0, 23424, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352068, 7000, 1, 0, 0, 0, 23425, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352069, 7000, 2, 0, 0, 0, 23425, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352070, 6998, 1, 0, 0, 0, 23426, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352071, 6998, 2, 0, 0, 0, 23426, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352072, 7000, 1, 0, 0, 0, 23427, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352073, 7000, 2, 0, 0, 0, 23427, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352074, 7021, 1, 0, 0, 0, 23428, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352075, 7021, 2, 0, 0, 0, 23428, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352076, 7000, 1, 0, 0, 0, 23429, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352077, 7000, 2, 0, 0, 0, 23429, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352078, 7000, 1, 0, 0, 0, 23430, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352079, 7000, 2, 0, 0, 0, 23430, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352080, 7000, 1, 0, 0, 0, 23431, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352081, 7000, 2, 0, 0, 0, 23431, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352082, 7000, 1, 0, 0, 0, 23432, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352083, 7000, 2, 0, 0, 0, 23432, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352084, 6996, 1, 0, 0, 0, 23433, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352085, 6996, 2, 0, 0, 0, 23433, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352086, 6996, 1, 0, 0, 0, 23434, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352087, 6996, 2, 0, 0, 0, 23434, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352088, 6996, 1, 0, 0, 0, 23435, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352089, 6996, 2, 0, 0, 0, 23435, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352090, 7000, 1, 0, 0, 0, 23436, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352091, 7000, 2, 0, 0, 0, 23436, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352092, 7000, 1, 0, 0, 0, 23437, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (352093, 7000, 2, 0, 0, 0, 23437, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (352094, 7063, 1, 0, 0, 0, 23437, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352095, 7063, 2, 0, 0, 0, 23437, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352096, 7000, 1, 0, 0, 0, 23438, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352097, 7000, 2, 0, 0, 0, 23438, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352098, 6996, 1, 0, 0, 0, 23439, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352099, 6996, 2, 0, 0, 0, 23439, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352100, 7000, 1, 0, 0, 0, 23440, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352101, 7000, 2, 0, 0, 0, 23440, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352102, 7021, 1, 0, 0, 0, 23441, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352103, 7021, 2, 0, 0, 0, 23441, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352104, 7000, 1, 0, 0, 0, 23442, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352105, 7000, 2, 0, 0, 0, 23442, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352106, 7000, 1, 0, 0, 0, 23443, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352107, 7000, 2, 0, 0, 0, 23443, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352108, 7000, 1, 0, 0, 0, 23444, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352109, 7000, 2, 0, 0, 0, 23444, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352110, 7000, 1, 0, 0, 0, 23445, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352111, 7000, 2, 0, 0, 0, 23445, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352112, 7000, 1, 0, 0, 0, 23446, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352113, 7000, 2, 0, 0, 0, 23446, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352114, 7000, 1, 0, 0, 0, 23447, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352115, 7000, 2, 0, 0, 0, 23447, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352116, 6998, 1, 0, 0, 0, 23448, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352117, 6998, 2, 0, 0, 0, 23448, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352118, 6998, 1, 0, 0, 0, 23449, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (352119, 6998, 2, 0, 0, 0, 23449, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (352120, 7064, 1, 0, 0, 0, 23449, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352121, 7064, 2, 0, 0, 0, 23449, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352122, 6998, 1, 0, 0, 0, 23450, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (352123, 6998, 2, 0, 0, 0, 23450, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (352124, 7064, 1, 0, 0, 0, 23450, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352125, 7064, 2, 0, 0, 0, 23450, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352126, 6998, 1, 0, 0, 0, 23451, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (352127, 6998, 2, 0, 0, 0, 23451, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (352128, 7064, 1, 0, 0, 0, 23451, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352129, 7064, 2, 0, 0, 0, 23451, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352130, 7017, 1, 0, 0, 0, 23452, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352131, 7017, 2, 0, 0, 0, 23452, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (352132, 7018, 2, 0, 0, 0, 23452, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352133, 7000, 1, 0, 0, 0, 23453, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352134, 7000, 2, 0, 0, 0, 23453, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352135, 7021, 1, 0, 0, 0, 23454, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352136, 7021, 2, 0, 0, 0, 23454, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352137, 6996, 1, 0, 0, 0, 23455, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352138, 6996, 2, 0, 0, 0, 23455, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352139, 7017, 1, 0, 0, 0, 23456, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352140, 7018, 2, 0, 0, 0, 23456, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352141, 7000, 1, 0, 0, 0, 23457, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352142, 7000, 2, 0, 0, 0, 23457, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352143, 7000, 1, 0, 0, 0, 23458, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352144, 7000, 2, 0, 0, 0, 23458, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352145, 7000, 1, 0, 0, 0, 23459, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352146, 7000, 2, 0, 0, 0, 23459, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352147, 7000, 1, 0, 0, 0, 23460, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352148, 7000, 2, 0, 0, 0, 23460, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352149, 6996, 1, 0, 0, 0, 23461, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352150, 6996, 2, 0, 0, 0, 23461, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352151, 6996, 1, 0, 0, 0, 23462, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352152, 6996, 2, 0, 0, 0, 23462, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352153, 6996, 1, 0, 0, 0, 23463, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352154, 6996, 2, 0, 0, 0, 23463, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352155, 7000, 1, 0, 0, 0, 23464, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352156, 7000, 2, 0, 0, 0, 23464, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352157, 7000, 1, 0, 0, 0, 23465, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352158, 7000, 2, 0, 0, 0, 23465, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352159, 7000, 1, 0, 0, 0, 23466, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352160, 7000, 2, 0, 0, 0, 23466, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352161, 7000, 1, 0, 0, 0, 23467, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352162, 7000, 2, 0, 0, 0, 23467, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352163, 6996, 1, 0, 0, 0, 23468, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352164, 6996, 2, 0, 0, 0, 23468, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352165, 7000, 1, 0, 0, 0, 23469, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352166, 7000, 2, 0, 0, 0, 23469, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352167, 6998, 1, 0, 0, 0, 23470, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352168, 6998, 2, 0, 0, 0, 23470, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352169, 6996, 1, 0, 0, 0, 23471, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352170, 6996, 2, 0, 0, 0, 23471, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352171, 7000, 1, 0, 0, 0, 23472, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352172, 7000, 2, 0, 0, 0, 23472, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352173, 6996, 1, 0, 0, 0, 23473, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352174, 6996, 2, 0, 0, 0, 23473, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352175, 6996, 1, 0, 0, 0, 23474, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352176, 6996, 2, 0, 0, 0, 23474, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352177, 6996, 1, 0, 0, 0, 23475, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352178, 6996, 2, 0, 0, 0, 23475, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352179, 7000, 1, 0, 0, 0, 23476, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352180, 7000, 2, 0, 0, 0, 23476, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352181, 7000, 1, 0, 0, 0, 23477, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352182, 7000, 2, 0, 0, 0, 23477, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352183, 7000, 1, 0, 0, 0, 23478, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352184, 7000, 2, 0, 0, 0, 23478, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352185, 7000, 1, 0, 0, 0, 23479, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352186, 7000, 2, 0, 0, 0, 23479, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352187, 7000, 1, 0, 0, 0, 23480, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352188, 7000, 2, 0, 0, 0, 23480, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352189, 7000, 1, 0, 0, 0, 23481, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352190, 7000, 2, 0, 0, 0, 23481, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352191, 7000, 1, 0, 0, 0, 23482, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352192, 7000, 2, 0, 0, 0, 23482, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352193, 7000, 1, 0, 0, 0, 23483, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352194, 7000, 2, 0, 0, 0, 23483, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352195, 7000, 1, 0, 0, 0, 23484, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352196, 7000, 2, 0, 0, 0, 23484, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352197, 6996, 1, 0, 0, 0, 23485, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352198, 6996, 2, 0, 0, 0, 23485, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352199, 7000, 1, 0, 0, 0, 23486, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352200, 7000, 2, 0, 0, 0, 23486, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352201, 6996, 1, 0, 0, 0, 23487, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352202, 6996, 2, 0, 0, 0, 23487, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352203, 7000, 1, 0, 0, 0, 23488, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352204, 7000, 2, 0, 0, 0, 23488, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352205, 7021, 1, 0, 0, 0, 23489, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352206, 7021, 2, 0, 0, 0, 23489, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352207, 7000, 1, 0, 0, 0, 23490, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (352208, 7000, 2, 0, 0, 0, 23490, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (352209, 7063, 1, 0, 0, 0, 23490, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352210, 7063, 2, 0, 0, 0, 23490, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352211, 7000, 1, 0, 0, 0, 23491, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352212, 7000, 2, 0, 0, 0, 23491, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352213, 7000, 1, 0, 0, 0, 23492, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352214, 7000, 2, 0, 0, 0, 23492, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352215, 7000, 1, 0, 0, 0, 23493, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352216, 7000, 2, 0, 0, 0, 23493, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352217, 7000, 1, 0, 0, 0, 23494, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352218, 7000, 2, 0, 0, 0, 23494, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352219, 7000, 1, 0, 0, 0, 23495, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352220, 7000, 2, 0, 0, 0, 23495, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352221, 7000, 1, 0, 0, 0, 23496, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352222, 7000, 2, 0, 0, 0, 23496, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352223, 7000, 1, 0, 0, 0, 23497, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352224, 7000, 2, 0, 0, 0, 23497, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352225, 7000, 1, 0, 0, 0, 23498, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352226, 7000, 2, 0, 0, 0, 23498, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352227, 6996, 1, 0, 0, 0, 23499, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352228, 6996, 2, 0, 0, 0, 23499, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352229, 7000, 1, 0, 0, 0, 23500, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352230, 7000, 2, 0, 0, 0, 23500, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352231, 6996, 1, 0, 0, 0, 23501, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352232, 6996, 2, 0, 0, 0, 23501, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352233, 6996, 1, 0, 0, 0, 23502, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352234, 6996, 2, 0, 0, 0, 23502, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352235, 6996, 1, 0, 0, 0, 23503, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352236, 6996, 2, 0, 0, 0, 23503, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352237, 7000, 1, 0, 0, 0, 23504, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352238, 7000, 2, 0, 0, 0, 23504, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352239, 7011, 2, 0, 0, 0, 23505, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352240, 7019, 1, 0, 0, 0, 23505, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352241, 7019, 2, 0, 0, 0, 23505, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (352242, 7000, 1, 0, 0, 0, 23506, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352243, 7000, 2, 0, 0, 0, 23506, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352244, 6996, 1, 0, 0, 0, 23507, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352245, 6996, 2, 0, 0, 0, 23507, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352246, 6996, 1, 0, 0, 0, 23508, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352247, 6996, 2, 0, 0, 0, 23508, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352248, 6996, 1, 0, 0, 0, 23509, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352249, 6996, 2, 0, 0, 0, 23509, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352250, 7000, 1, 0, 0, 0, 23510, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352251, 7000, 2, 0, 0, 0, 23510, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352252, 6996, 1, 0, 0, 0, 23511, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352253, 6996, 2, 0, 0, 0, 23511, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352254, 6996, 1, 0, 0, 0, 23512, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352255, 6996, 2, 0, 0, 0, 23512, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352256, 6998, 1, 0, 0, 0, 23513, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (352257, 6998, 2, 0, 0, 0, 23513, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (352258, 7064, 1, 0, 0, 0, 23513, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352259, 7064, 2, 0, 0, 0, 23513, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352260, 7000, 1, 0, 0, 0, 23514, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352261, 7000, 2, 0, 0, 0, 23514, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352262, 7000, 1, 0, 0, 0, 23515, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352263, 7000, 2, 0, 0, 0, 23515, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352264, 7000, 1, 0, 0, 0, 23516, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352265, 7000, 2, 0, 0, 0, 23516, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352266, 6996, 1, 0, 0, 0, 23517, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352267, 6996, 2, 0, 0, 0, 23517, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352268, 6996, 1, 0, 0, 0, 23518, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352269, 6996, 2, 0, 0, 0, 23518, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352270, 6996, 1, 0, 0, 0, 23519, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352271, 6996, 2, 0, 0, 0, 23519, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352272, 7000, 1, 0, 0, 0, 23520, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352273, 7000, 2, 0, 0, 0, 23520, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352274, 7000, 1, 0, 0, 0, 23521, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352275, 7000, 2, 0, 0, 0, 23521, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352276, 7000, 1, 0, 0, 0, 23522, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352277, 7000, 2, 0, 0, 0, 23522, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352278, 7000, 1, 0, 0, 0, 23523, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352279, 7000, 2, 0, 0, 0, 23523, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352280, 7000, 1, 0, 0, 0, 23524, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352281, 7000, 2, 0, 0, 0, 23524, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352282, 7000, 1, 0, 0, 0, 23525, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352283, 7000, 2, 0, 0, 0, 23525, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352284, 7000, 1, 0, 0, 0, 23526, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352285, 7000, 2, 0, 0, 0, 23526, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352286, 7000, 1, 0, 0, 0, 23527, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352287, 7000, 2, 0, 0, 0, 23527, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352288, 7000, 1, 0, 0, 0, 23528, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352289, 7000, 2, 0, 0, 0, 23528, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352290, 7000, 1, 0, 0, 0, 23529, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352291, 7000, 2, 0, 0, 0, 23529, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352292, 7000, 1, 0, 0, 0, 23530, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352293, 7000, 2, 0, 0, 0, 23530, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352294, 7000, 1, 0, 0, 0, 23531, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352295, 7000, 2, 0, 0, 0, 23531, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352296, 6996, 1, 0, 0, 0, 23532, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352297, 6996, 2, 0, 0, 0, 23532, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352298, 7000, 1, 0, 0, 0, 23533, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352299, 7000, 2, 0, 0, 0, 23533, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352300, 7000, 1, 0, 0, 0, 23534, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352301, 7000, 2, 0, 0, 0, 23534, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352302, 6996, 1, 0, 0, 0, 23535, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352303, 6996, 2, 0, 0, 0, 23535, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352304, 6996, 1, 0, 0, 0, 23536, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352305, 6996, 2, 0, 0, 0, 23536, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352306, 6996, 1, 0, 0, 0, 23537, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352307, 6996, 2, 0, 0, 0, 23537, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352308, 6996, 1, 0, 0, 0, 23538, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352309, 6996, 2, 0, 0, 0, 23538, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352310, 7000, 1, 0, 0, 0, 23539, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352311, 7000, 2, 0, 0, 0, 23539, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352312, 7000, 1, 0, 0, 0, 23540, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352313, 7000, 2, 0, 0, 0, 23540, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352314, 7000, 1, 0, 0, 0, 23541, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352315, 7000, 2, 0, 0, 0, 23541, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352316, 7000, 1, 0, 0, 0, 23542, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352317, 7000, 2, 0, 0, 0, 23542, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352318, 7000, 1, 0, 0, 0, 23543, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352319, 7000, 2, 0, 0, 0, 23543, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352320, 7000, 1, 0, 0, 0, 23544, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352321, 7000, 2, 0, 0, 0, 23544, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352322, 7000, 1, 0, 0, 0, 23545, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352323, 7000, 2, 0, 0, 0, 23545, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352324, 7000, 1, 0, 0, 0, 23546, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352325, 7000, 2, 0, 0, 0, 23546, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352326, 6998, 1, 0, 0, 0, 23547, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (352327, 6998, 2, 0, 0, 0, 23547, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (352328, 7064, 1, 0, 0, 0, 23547, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352329, 7064, 2, 0, 0, 0, 23547, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352330, 7000, 1, 0, 0, 0, 23548, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352331, 7000, 2, 0, 0, 0, 23548, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352332, 6996, 1, 0, 0, 0, 23549, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352333, 6996, 2, 0, 0, 0, 23549, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352334, 7000, 1, 0, 0, 0, 23550, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352335, 7000, 2, 0, 0, 0, 23550, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352336, 7000, 1, 0, 0, 0, 23551, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (352337, 7000, 2, 0, 0, 0, 23551, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (352338, 7065, 1, 0, 0, 0, 23551, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352339, 7065, 2, 0, 0, 0, 23551, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352340, 6996, 1, 0, 0, 0, 23552, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (352341, 6996, 2, 0, 0, 0, 23552, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (352342, 7066, 1, 0, 0, 0, 23552, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352343, 7066, 2, 0, 0, 0, 23552, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352344, 6996, 1, 0, 0, 0, 23553, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (352345, 6996, 2, 0, 0, 0, 23553, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (352346, 7066, 1, 0, 0, 0, 23553, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352347, 7066, 2, 0, 0, 0, 23553, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352348, 7000, 1, 0, 0, 0, 23554, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352349, 7000, 2, 0, 0, 0, 23554, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352350, 7000, 1, 0, 0, 0, 23555, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352351, 7000, 2, 0, 0, 0, 23555, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352352, 6998, 1, 0, 0, 0, 23556, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352353, 6998, 2, 0, 0, 0, 23556, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352354, 7000, 1, 0, 0, 0, 23557, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352355, 7000, 2, 0, 0, 0, 23557, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352356, 7000, 1, 0, 0, 0, 23558, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352357, 7000, 2, 0, 0, 0, 23558, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352358, 6996, 1, 0, 0, 0, 23559, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352359, 6996, 2, 0, 0, 0, 23559, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352360, 6996, 1, 0, 0, 0, 23560, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352361, 6996, 2, 0, 0, 0, 23560, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352362, 7000, 1, 0, 0, 0, 23561, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352363, 7000, 2, 0, 0, 0, 23561, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352364, 7000, 1, 0, 0, 0, 23562, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352365, 7000, 2, 0, 0, 0, 23562, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352366, 7000, 1, 0, 0, 0, 23563, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352367, 7000, 2, 0, 0, 0, 23563, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352368, 7000, 1, 0, 0, 0, 23564, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352369, 7000, 2, 0, 0, 0, 23564, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352370, 7000, 1, 0, 0, 0, 23565, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (352371, 7000, 2, 0, 0, 0, 23565, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (352372, 7065, 1, 0, 0, 0, 23565, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352373, 7065, 2, 0, 0, 0, 23565, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352374, 7000, 1, 0, 0, 0, 23566, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352375, 7000, 2, 0, 0, 0, 23566, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352376, 7000, 1, 0, 0, 0, 23567, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352377, 7000, 2, 0, 0, 0, 23567, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352378, 6998, 1, 0, 0, 0, 23568, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352379, 6998, 2, 0, 0, 0, 23568, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352380, 7000, 1, 0, 0, 0, 23569, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352381, 7000, 2, 0, 0, 0, 23569, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352382, 7000, 1, 0, 0, 0, 23570, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352383, 7000, 2, 0, 0, 0, 23570, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352384, 7000, 1, 0, 0, 0, 23571, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352385, 7000, 2, 0, 0, 0, 23571, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352386, 7000, 1, 0, 0, 0, 23572, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352387, 7000, 2, 0, 0, 0, 23572, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352388, 7000, 1, 0, 0, 0, 23573, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352389, 7000, 2, 0, 0, 0, 23573, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352390, 7000, 1, 0, 0, 0, 23574, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352391, 7000, 2, 0, 0, 0, 23574, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352392, 7000, 1, 0, 0, 0, 23575, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352393, 7000, 2, 0, 0, 0, 23575, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352394, 7000, 1, 0, 0, 0, 23576, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352395, 7000, 2, 0, 0, 0, 23576, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352396, 7000, 1, 0, 0, 0, 23577, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352397, 7000, 2, 0, 0, 0, 23577, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352398, 7021, 1, 0, 0, 0, 23578, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352399, 7021, 2, 0, 0, 0, 23578, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352400, 7000, 1, 0, 0, 0, 23579, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352401, 7000, 2, 0, 0, 0, 23579, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352402, 7000, 1, 0, 0, 0, 23580, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352403, 7000, 2, 0, 0, 0, 23580, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352404, 7000, 1, 0, 0, 0, 23581, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352405, 7000, 2, 0, 0, 0, 23581, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352406, 7000, 1, 0, 0, 0, 23582, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352407, 7000, 2, 0, 0, 0, 23582, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352408, 7000, 1, 0, 0, 0, 23583, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352409, 7000, 2, 0, 0, 0, 23583, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352410, 7000, 1, 0, 0, 0, 23584, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352411, 7000, 2, 0, 0, 0, 23584, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352412, 7000, 1, 0, 0, 0, 23585, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352413, 7000, 2, 0, 0, 0, 23585, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352414, 7000, 1, 0, 0, 0, 23586, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352415, 7000, 2, 0, 0, 0, 23586, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352416, 7000, 1, 0, 0, 0, 23587, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352417, 7000, 2, 0, 0, 0, 23587, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352418, 7000, 1, 0, 0, 0, 23588, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352419, 7000, 2, 0, 0, 0, 23588, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352420, 7000, 1, 0, 0, 0, 23589, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352421, 7000, 2, 0, 0, 0, 23589, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352422, 7000, 1, 0, 0, 0, 23590, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352423, 7000, 2, 0, 0, 0, 23590, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352424, 7000, 1, 0, 0, 0, 23591, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352425, 7000, 2, 0, 0, 0, 23591, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352426, 6996, 1, 0, 0, 0, 23592, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352427, 6996, 2, 0, 0, 0, 23592, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352428, 7000, 1, 0, 0, 0, 23593, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352429, 7000, 2, 0, 0, 0, 23593, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352430, 7000, 1, 0, 0, 0, 23594, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352431, 7000, 2, 0, 0, 0, 23594, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352432, 7000, 1, 0, 0, 0, 23595, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352433, 7000, 2, 0, 0, 0, 23595, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352434, 7000, 1, 0, 0, 0, 23596, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352435, 7000, 2, 0, 0, 0, 23596, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352436, 6996, 1, 0, 0, 0, 23597, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352437, 6996, 2, 0, 0, 0, 23597, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352438, 6996, 1, 0, 0, 0, 23598, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352439, 6996, 2, 0, 0, 0, 23598, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352440, 7000, 1, 0, 0, 0, 23599, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352441, 7000, 2, 0, 0, 0, 23599, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352442, 7000, 1, 0, 0, 0, 23600, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352443, 7000, 2, 0, 0, 0, 23600, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352444, 7000, 1, 0, 0, 0, 23601, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352445, 7000, 2, 0, 0, 0, 23601, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352446, 7000, 1, 0, 0, 0, 23602, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352447, 7000, 2, 0, 0, 0, 23602, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352448, 7000, 1, 0, 0, 0, 23603, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352449, 7000, 2, 0, 0, 0, 23603, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352450, 7000, 1, 0, 0, 0, 23604, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352451, 7000, 2, 0, 0, 0, 23604, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352452, 7000, 1, 0, 0, 0, 23605, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352453, 7000, 2, 0, 0, 0, 23605, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352454, 7000, 1, 0, 0, 0, 23606, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352455, 7000, 2, 0, 0, 0, 23606, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352456, 7000, 1, 0, 0, 0, 23607, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352457, 7000, 2, 0, 0, 0, 23607, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352458, 7000, 1, 0, 0, 0, 23608, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352459, 7000, 2, 0, 0, 0, 23608, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352460, 7000, 1, 0, 0, 0, 23609, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352461, 7000, 2, 0, 0, 0, 23609, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352462, 7000, 1, 0, 0, 0, 23610, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352463, 7000, 2, 0, 0, 0, 23610, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352464, 7000, 1, 0, 0, 0, 23611, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352465, 7000, 2, 0, 0, 0, 23611, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352466, 7000, 1, 0, 0, 0, 23612, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352467, 7000, 2, 0, 0, 0, 23612, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352468, 7067, 1, 0, 0, 0, 23613, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352469, 7067, 2, 0, 0, 0, 23613, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352470, 7068, 1, 0, 0, 0, 23613, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (352471, 7068, 2, 0, 0, 0, 23613, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (352472, 7069, 1, 0, 0, 0, 23614, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (352473, 7069, 2, 0, 0, 0, 23614, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (352474, 7070, 1, 0, 0, 0, 23614, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352475, 7070, 2, 0, 0, 0, 23614, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352476, 7000, 1, 0, 0, 0, 23615, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352477, 7000, 2, 0, 0, 0, 23615, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352478, 7000, 1, 0, 0, 0, 23616, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352479, 7000, 2, 0, 0, 0, 23616, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352480, 7000, 1, 0, 0, 0, 23617, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352481, 7000, 2, 0, 0, 0, 23617, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352482, 7000, 1, 0, 0, 0, 23618, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352483, 7000, 2, 0, 0, 0, 23618, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352484, 6996, 1, 0, 0, 0, 23619, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352485, 6996, 2, 0, 0, 0, 23619, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352486, 7000, 1, 0, 0, 0, 23620, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352487, 7000, 2, 0, 0, 0, 23620, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352488, 7000, 1, 0, 0, 0, 23621, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352489, 7000, 2, 0, 0, 0, 23621, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352490, 6996, 1, 0, 0, 0, 23622, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352491, 6996, 2, 0, 0, 0, 23622, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352492, 7000, 1, 0, 0, 0, 23623, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352493, 7000, 2, 0, 0, 0, 23623, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352494, 7004, 1, 0, 0, 0, 23624, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352495, 7004, 2, 0, 0, 0, 23624, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352496, 7100, 1, 0, 0, 0, 24065, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352497, 7101, 1, 0, 0, 0, 24065, 0, NULL, 1);
INSERT INTO `os_applicant_attr` VALUES (352498, 7100, 2, 0, 0, 0, 24065, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352499, 7102, 1, 0, 0, 0, 24066, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352500, 7102, 2, 0, 0, 0, 24066, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352501, 7103, 1, 0, 0, 0, 24067, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352502, 7103, 2, 0, 0, 0, 24067, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352503, 7104, 1, 0, 0, 0, 24068, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352504, 7104, 2, 0, 0, 0, 24068, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352505, 7105, 1, 0, 0, 0, 24069, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352506, 7105, 2, 0, 0, 0, 24069, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352507, 7106, 1, 0, 0, 0, 24070, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352508, 7106, 2, 0, 0, 0, 24070, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352509, 7107, 1, 0, 0, 0, 24071, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352510, 7107, 2, 0, 0, 0, 24071, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352511, 7108, 1, 0, 0, 0, 24072, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352512, 7108, 2, 0, 0, 0, 24072, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352513, 7109, 1, 0, 0, 0, 24073, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352514, 7109, 2, 0, 0, 0, 24073, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352515, 7110, 1, 0, 0, 0, 24074, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352516, 7110, 2, 0, 0, 0, 24074, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352517, 7111, 1, 0, 0, 0, 24075, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352518, 7111, 2, 0, 0, 0, 24075, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352519, 7112, 1, 0, 0, 0, 24076, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352520, 7112, 2, 0, 0, 0, 24076, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352521, 7113, 1, 0, 0, 0, 24077, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352522, 7114, 2, 0, 0, 0, 24077, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352523, 7115, 1, 0, 0, 0, 24078, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352524, 7115, 2, 0, 0, 0, 24078, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352525, 7116, 1, 0, 0, 0, 24079, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352526, 7116, 2, 0, 0, 0, 24079, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352527, 7115, 1, 0, 0, 0, 24080, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352528, 7115, 2, 0, 0, 0, 24080, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352529, 7117, 1, 0, 0, 0, 24081, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352530, 7117, 2, 0, 0, 0, 24081, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352531, 7118, 1, 0, 0, 0, 24082, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352532, 7119, 2, 0, 0, 0, 24082, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352533, 7120, 1, 0, 0, 0, 24083, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352534, 7120, 2, 0, 0, 0, 24083, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352535, 7121, 1, 0, 0, 0, 24084, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352536, 7121, 2, 0, 0, 0, 24084, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352537, 7122, 1, 0, 0, 0, 24085, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352538, 7122, 2, 0, 0, 0, 24085, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352539, 7123, 1, 0, 0, 0, 24086, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352540, 7123, 2, 0, 0, 0, 24086, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352541, 7118, 1, 0, 0, 0, 24087, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352542, 7118, 2, 0, 0, 0, 24087, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352543, 7124, 1, 0, 0, 0, 24088, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352544, 7124, 2, 0, 0, 0, 24088, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352545, 7118, 1, 0, 0, 0, 24089, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352546, 7118, 2, 0, 0, 0, 24089, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352547, 7116, 1, 0, 0, 0, 24090, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352548, 7116, 2, 0, 0, 0, 24090, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352549, 7116, 1, 0, 0, 0, 24091, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352550, 7116, 2, 0, 0, 0, 24091, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352551, 7118, 1, 0, 0, 0, 24092, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352552, 7118, 2, 0, 0, 0, 24092, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352553, 7118, 1, 0, 0, 0, 24093, 0, NULL, 0);
INSERT INTO `os_applicant_attr` VALUES (352554, 7118, 2, 0, 0, 0, 24093, 0, NULL, 0);

-- ----------------------------
-- Table structure for os_area
-- ----------------------------
DROP TABLE IF EXISTS `os_area`;
CREATE TABLE `os_area`  (
  `id` int(0) UNSIGNED NOT NULL AUTO_INCREMENT COMMENT 'ID',
  `code` char(6) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NOT NULL COMMENT '编码',
  `right` int(0) NOT NULL DEFAULT 0 COMMENT '右值',
  `left` int(0) NOT NULL DEFAULT 0 COMMENT '左值',
  `name` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NOT NULL COMMENT '名称',
  `parent_id` int(0) NOT NULL COMMENT '上级ID',
  `level` tinyint(0) NOT NULL COMMENT '级别，1省2市3县',
  `created_at` datetime(0) NOT NULL COMMENT '创建时间',
  `updated_at` datetime(0) NOT NULL COMMENT '更新时间',
  PRIMARY KEY (`id`) USING BTREE
) ENGINE = InnoDB AUTO_INCREMENT = 3225 CHARACTER SET = utf8mb4 COLLATE = utf8mb4_general_ci COMMENT = '省市县表' ROW_FORMAT = Dynamic;

-- ----------------------------
-- Records of os_area
-- ----------------------------
INSERT INTO `os_area` VALUES (2, '110000', 36, 1, '北京市', 0, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3, '110100', 35, 2, '北京市', 2, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (4, '110101', 4, 3, '东城区', 3, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (5, '110102', 6, 5, '西城区', 3, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (6, '110105', 8, 7, '朝阳区', 3, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (7, '110106', 10, 9, '丰台区', 3, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (8, '110107', 12, 11, '石景山区', 3, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (9, '110108', 14, 13, '海淀区', 3, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (10, '110109', 16, 15, '门头沟区', 3, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (11, '110111', 18, 17, '房山区', 3, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (12, '110112', 20, 19, '通州区', 3, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (13, '110113', 22, 21, '顺义区', 3, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (14, '110114', 24, 23, '昌平区', 3, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (15, '110115', 26, 25, '大兴区', 3, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (16, '110116', 28, 27, '怀柔区', 3, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (17, '110117', 30, 29, '平谷区', 3, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (18, '110118', 32, 31, '密云区', 3, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (19, '110119', 34, 33, '延庆区', 3, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (20, '120000', 72, 37, '天津市', 2, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (21, '120100', 71, 38, '天津市', 20, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (22, '120101', 40, 39, '和平区', 21, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (23, '120102', 42, 41, '河东区', 21, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (24, '120103', 44, 43, '河西区', 21, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (25, '120104', 46, 45, '南开区', 21, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (26, '120105', 48, 47, '河北区', 21, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (27, '120106', 50, 49, '红桥区', 21, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (28, '120110', 52, 51, '东丽区', 21, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (29, '120111', 54, 53, '西青区', 21, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (30, '120112', 56, 55, '津南区', 21, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (31, '120113', 58, 57, '北辰区', 21, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (32, '120114', 60, 59, '武清区', 21, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (33, '120115', 62, 61, '宝坻区', 21, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (34, '120116', 64, 63, '滨海新区', 21, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (35, '120117', 66, 65, '宁河区', 21, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (36, '120118', 68, 67, '静海区', 21, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (37, '120119', 70, 69, '蓟州区', 21, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (38, '130000', 432, 73, '河北省', 20, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (39, '130100', 119, 74, '石家庄市', 38, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (40, '130102', 76, 75, '长安区', 39, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (41, '130104', 78, 77, '桥西区', 39, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (42, '130105', 80, 79, '新华区', 39, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (43, '130107', 82, 81, '井陉矿区', 39, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (44, '130108', 84, 83, '裕华区', 39, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (45, '130109', 86, 85, '藁城区', 39, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (46, '130110', 88, 87, '鹿泉区', 39, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (47, '130111', 90, 89, '栾城区', 39, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (48, '130121', 92, 91, '井陉县', 39, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (49, '130123', 94, 93, '正定县', 39, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (50, '130125', 96, 95, '行唐县', 39, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (51, '130126', 98, 97, '灵寿县', 39, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (52, '130127', 100, 99, '高邑县', 39, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (53, '130128', 102, 101, '深泽县', 39, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (54, '130129', 104, 103, '赞皇县', 39, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (55, '130130', 106, 105, '无极县', 39, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (56, '130131', 108, 107, '平山县', 39, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (57, '130132', 110, 109, '元氏县', 39, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (58, '130133', 112, 111, '赵县', 39, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (59, '130181', 114, 113, '辛集市', 39, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (60, '130183', 116, 115, '晋州市', 39, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (61, '130184', 118, 117, '新乐市', 39, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (62, '130200', 149, 120, '唐山市', 38, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (63, '130202', 122, 121, '路南区', 62, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (64, '130203', 124, 123, '路北区', 62, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (65, '130204', 126, 125, '古冶区', 62, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (66, '130205', 128, 127, '开平区', 62, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (67, '130207', 130, 129, '丰南区', 62, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (68, '130208', 132, 131, '丰润区', 62, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (69, '130209', 134, 133, '曹妃甸区', 62, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (70, '130224', 136, 135, '滦南县', 62, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (71, '130225', 138, 137, '乐亭县', 62, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (72, '130227', 140, 139, '迁西县', 62, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (73, '130229', 142, 141, '玉田县', 62, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (74, '130281', 144, 143, '遵化市', 62, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (75, '130283', 146, 145, '迁安市', 62, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (76, '130284', 148, 147, '滦州市', 62, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (77, '130300', 165, 150, '秦皇岛市', 38, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (78, '130302', 152, 151, '海港区', 77, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (79, '130303', 154, 153, '山海关区', 77, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (80, '130304', 156, 155, '北戴河区', 77, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (81, '130306', 158, 157, '抚宁区', 77, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (82, '130321', 160, 159, '青龙满族自治县', 77, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (83, '130322', 162, 161, '昌黎县', 77, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (84, '130324', 164, 163, '卢龙县', 77, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (85, '130400', 203, 166, '邯郸市', 38, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (86, '130402', 168, 167, '邯山区', 85, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (87, '130403', 170, 169, '丛台区', 85, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (88, '130404', 172, 171, '复兴区', 85, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (89, '130406', 174, 173, '峰峰矿区', 85, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (90, '130407', 176, 175, '肥乡区', 85, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (91, '130408', 178, 177, '永年区', 85, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (92, '130423', 180, 179, '临漳县', 85, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (93, '130424', 182, 181, '成安县', 85, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (94, '130425', 184, 183, '大名县', 85, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (95, '130426', 186, 185, '涉县', 85, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (96, '130427', 188, 187, '磁县', 85, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (97, '130430', 190, 189, '邱县', 85, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (98, '130431', 192, 191, '鸡泽县', 85, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (99, '130432', 194, 193, '广平县', 85, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (100, '130433', 196, 195, '馆陶县', 85, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (101, '130434', 198, 197, '魏县', 85, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (102, '130435', 200, 199, '曲周县', 85, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (103, '130481', 202, 201, '武安市', 85, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (104, '130500', 243, 204, '邢台市', 38, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (105, '130502', 206, 205, '桥东区', 104, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (106, '130503', 208, 207, '桥西区', 104, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (107, '130521', 210, 209, '邢台县', 104, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (108, '130522', 212, 211, '临城县', 104, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (109, '130523', 214, 213, '内丘县', 104, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (110, '130524', 216, 215, '柏乡县', 104, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (111, '130525', 218, 217, '隆尧县', 104, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (112, '130526', 220, 219, '任县', 104, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (113, '130527', 222, 221, '南和县', 104, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (114, '130528', 224, 223, '宁晋县', 104, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (115, '130529', 226, 225, '巨鹿县', 104, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (116, '130530', 228, 227, '新河县', 104, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (117, '130531', 230, 229, '广宗县', 104, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (118, '130532', 232, 231, '平乡县', 104, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (119, '130533', 234, 233, '威县', 104, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (120, '130534', 236, 235, '清河县', 104, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (121, '130535', 238, 237, '临西县', 104, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (122, '130581', 240, 239, '南宫市', 104, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (123, '130582', 242, 241, '沙河市', 104, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (124, '130600', 293, 244, '保定市', 38, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (125, '130602', 246, 245, '竞秀区', 124, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (126, '130606', 248, 247, '莲池区', 124, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (127, '130607', 250, 249, '满城区', 124, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (128, '130608', 252, 251, '清苑区', 124, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (129, '130609', 254, 253, '徐水区', 124, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (130, '130623', 256, 255, '涞水县', 124, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (131, '130624', 258, 257, '阜平县', 124, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (132, '130626', 260, 259, '定兴县', 124, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (133, '130627', 262, 261, '唐县', 124, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (134, '130628', 264, 263, '高阳县', 124, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (135, '130629', 266, 265, '容城县', 124, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (136, '130630', 268, 267, '涞源县', 124, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (137, '130631', 270, 269, '望都县', 124, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (138, '130632', 272, 271, '安新县', 124, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (139, '130633', 274, 273, '易县', 124, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (140, '130634', 276, 275, '曲阳县', 124, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (141, '130635', 278, 277, '蠡县', 124, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (142, '130636', 280, 279, '顺平县', 124, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (143, '130637', 282, 281, '博野县', 124, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (144, '130638', 284, 283, '雄县', 124, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (145, '130681', 286, 285, '涿州市', 124, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (146, '130682', 288, 287, '定州市', 124, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (147, '130683', 290, 289, '安国市', 124, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (148, '130684', 292, 291, '高碑店市', 124, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (149, '130700', 327, 294, '张家口市', 38, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (150, '130702', 296, 295, '桥东区', 149, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (151, '130703', 298, 297, '桥西区', 149, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (152, '130705', 300, 299, '宣化区', 149, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (153, '130706', 302, 301, '下花园区', 149, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (154, '130708', 304, 303, '万全区', 149, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (155, '130709', 306, 305, '崇礼区', 149, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (156, '130722', 308, 307, '张北县', 149, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (157, '130723', 310, 309, '康保县', 149, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (158, '130724', 312, 311, '沽源县', 149, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (159, '130725', 314, 313, '尚义县', 149, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (160, '130726', 316, 315, '蔚县', 149, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (161, '130727', 318, 317, '阳原县', 149, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (162, '130728', 320, 319, '怀安县', 149, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (163, '130730', 322, 321, '怀来县', 149, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (164, '130731', 324, 323, '涿鹿县', 149, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (165, '130732', 326, 325, '赤城县', 149, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (166, '130800', 351, 328, '承德市', 38, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (167, '130802', 330, 329, '双桥区', 166, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (168, '130803', 332, 331, '双滦区', 166, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (169, '130804', 334, 333, '鹰手营子矿区', 166, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (170, '130821', 336, 335, '承德县', 166, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (171, '130822', 338, 337, '兴隆县', 166, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (172, '130824', 340, 339, '滦平县', 166, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (173, '130825', 342, 341, '隆化县', 166, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (174, '130826', 344, 343, '丰宁满族自治县', 166, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (175, '130827', 346, 345, '宽城满族自治县', 166, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (176, '130828', 348, 347, '围场满族蒙古族自治县', 166, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (177, '130881', 350, 349, '平泉市', 166, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (178, '130900', 385, 352, '沧州市', 38, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (179, '130902', 354, 353, '新华区', 178, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (180, '130903', 356, 355, '运河区', 178, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (181, '130921', 358, 357, '沧县', 178, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (182, '130922', 360, 359, '青县', 178, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (183, '130923', 362, 361, '东光县', 178, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (184, '130924', 364, 363, '海兴县', 178, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (185, '130925', 366, 365, '盐山县', 178, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (186, '130926', 368, 367, '肃宁县', 178, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (187, '130927', 370, 369, '南皮县', 178, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (188, '130928', 372, 371, '吴桥县', 178, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (189, '130929', 374, 373, '献县', 178, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (190, '130930', 376, 375, '孟村回族自治县', 178, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (191, '130981', 378, 377, '泊头市', 178, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (192, '130982', 380, 379, '任丘市', 178, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (193, '130983', 382, 381, '黄骅市', 178, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (194, '130984', 384, 383, '河间市', 178, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (195, '131000', 407, 386, '廊坊市', 38, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (196, '131002', 388, 387, '安次区', 195, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (197, '131003', 390, 389, '广阳区', 195, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (198, '131022', 392, 391, '固安县', 195, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (199, '131023', 394, 393, '永清县', 195, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (200, '131024', 396, 395, '香河县', 195, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (201, '131025', 398, 397, '大城县', 195, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (202, '131026', 400, 399, '文安县', 195, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (203, '131028', 402, 401, '大厂回族自治县', 195, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (204, '131081', 404, 403, '霸州市', 195, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (205, '131082', 406, 405, '三河市', 195, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (206, '131100', 431, 408, '衡水市', 38, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (207, '131102', 410, 409, '桃城区', 206, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (208, '131103', 412, 411, '冀州区', 206, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (209, '131121', 414, 413, '枣强县', 206, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (210, '131122', 416, 415, '武邑县', 206, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (211, '131123', 418, 417, '武强县', 206, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (212, '131124', 420, 419, '饶阳县', 206, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (213, '131125', 422, 421, '安平县', 206, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (214, '131126', 424, 423, '故城县', 206, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (215, '131127', 426, 425, '景县', 206, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (216, '131128', 428, 427, '阜城县', 206, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (217, '131182', 430, 429, '深州市', 206, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (218, '140000', 690, 433, '山西省', 38, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (219, '140100', 455, 434, '太原市', 218, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (220, '140105', 436, 435, '小店区', 219, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (221, '140106', 438, 437, '迎泽区', 219, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (222, '140107', 440, 439, '杏花岭区', 219, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (223, '140108', 442, 441, '尖草坪区', 219, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (224, '140109', 444, 443, '万柏林区', 219, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (225, '140110', 446, 445, '晋源区', 219, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (226, '140121', 448, 447, '清徐县', 219, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (227, '140122', 450, 449, '阳曲县', 219, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (228, '140123', 452, 451, '娄烦县', 219, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (229, '140181', 454, 453, '古交市', 219, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (230, '140200', 477, 456, '大同市', 218, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (231, '140212', 458, 457, '新荣区', 230, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (232, '140213', 460, 459, '平城区', 230, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (233, '140214', 462, 461, '云冈区', 230, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (234, '140215', 464, 463, '云州区', 230, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (235, '140221', 466, 465, '阳高县', 230, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (236, '140222', 468, 467, '天镇县', 230, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (237, '140223', 470, 469, '广灵县', 230, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (238, '140224', 472, 471, '灵丘县', 230, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (239, '140225', 474, 473, '浑源县', 230, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (240, '140226', 476, 475, '左云县', 230, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (241, '140300', 489, 478, '阳泉市', 218, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (242, '140302', 480, 479, '城区', 241, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (243, '140303', 482, 481, '矿区', 241, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (244, '140311', 484, 483, '郊区', 241, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (245, '140321', 486, 485, '平定县', 241, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (246, '140322', 488, 487, '盂县', 241, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (247, '140400', 515, 490, '长治市', 218, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (248, '140403', 492, 491, '潞州区', 247, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (249, '140404', 494, 493, '上党区', 247, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (250, '140405', 496, 495, '屯留区', 247, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (251, '140406', 498, 497, '潞城区', 247, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (252, '140423', 500, 499, '襄垣县', 247, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (253, '140425', 502, 501, '平顺县', 247, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (254, '140426', 504, 503, '黎城县', 247, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (255, '140427', 506, 505, '壶关县', 247, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (256, '140428', 508, 507, '长子县', 247, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (257, '140429', 510, 509, '武乡县', 247, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (258, '140430', 512, 511, '沁县', 247, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (259, '140431', 514, 513, '沁源县', 247, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (260, '140500', 529, 516, '晋城市', 218, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (261, '140502', 518, 517, '城区', 260, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (262, '140521', 520, 519, '沁水县', 260, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (263, '140522', 522, 521, '阳城县', 260, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (264, '140524', 524, 523, '陵川县', 260, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (265, '140525', 526, 525, '泽州县', 260, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (266, '140581', 528, 527, '高平市', 260, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (267, '140600', 543, 530, '朔州市', 218, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (268, '140602', 532, 531, '朔城区', 267, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (269, '140603', 534, 533, '平鲁区', 267, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (270, '140621', 536, 535, '山阴县', 267, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (271, '140622', 538, 537, '应县', 267, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (272, '140623', 540, 539, '右玉县', 267, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (273, '140681', 542, 541, '怀仁市', 267, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (274, '140700', 567, 544, '晋中市', 218, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (275, '140702', 546, 545, '榆次区', 274, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (276, '140721', 548, 547, '榆社县', 274, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (277, '140722', 550, 549, '左权县', 274, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (278, '140723', 552, 551, '和顺县', 274, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (279, '140724', 554, 553, '昔阳县', 274, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (280, '140725', 556, 555, '寿阳县', 274, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (281, '140726', 558, 557, '太谷县', 274, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (282, '140727', 560, 559, '祁县', 274, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (283, '140728', 562, 561, '平遥县', 274, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (284, '140729', 564, 563, '灵石县', 274, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (285, '140781', 566, 565, '介休市', 274, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (286, '140800', 595, 568, '运城市', 218, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (287, '140802', 570, 569, '盐湖区', 286, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (288, '140821', 572, 571, '临猗县', 286, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (289, '140822', 574, 573, '万荣县', 286, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (290, '140823', 576, 575, '闻喜县', 286, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (291, '140824', 578, 577, '稷山县', 286, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (292, '140825', 580, 579, '新绛县', 286, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (293, '140826', 582, 581, '绛县', 286, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (294, '140827', 584, 583, '垣曲县', 286, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (295, '140828', 586, 585, '夏县', 286, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (296, '140829', 588, 587, '平陆县', 286, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (297, '140830', 590, 589, '芮城县', 286, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (298, '140881', 592, 591, '永济市', 286, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (299, '140882', 594, 593, '河津市', 286, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (300, '140900', 625, 596, '忻州市', 218, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (301, '140902', 598, 597, '忻府区', 300, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (302, '140921', 600, 599, '定襄县', 300, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (303, '140922', 602, 601, '五台县', 300, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (304, '140923', 604, 603, '代县', 300, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (305, '140924', 606, 605, '繁峙县', 300, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (306, '140925', 608, 607, '宁武县', 300, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (307, '140926', 610, 609, '静乐县', 300, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (308, '140927', 612, 611, '神池县', 300, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (309, '140928', 614, 613, '五寨县', 300, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (310, '140929', 616, 615, '岢岚县', 300, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (311, '140930', 618, 617, '河曲县', 300, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (312, '140931', 620, 619, '保德县', 300, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (313, '140932', 622, 621, '偏关县', 300, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (314, '140981', 624, 623, '原平市', 300, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (315, '141000', 661, 626, '临汾市', 218, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (316, '141002', 628, 627, '尧都区', 315, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (317, '141021', 630, 629, '曲沃县', 315, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (318, '141022', 632, 631, '翼城县', 315, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (319, '141023', 634, 633, '襄汾县', 315, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (320, '141024', 636, 635, '洪洞县', 315, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (321, '141025', 638, 637, '古县', 315, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (322, '141026', 640, 639, '安泽县', 315, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (323, '141027', 642, 641, '浮山县', 315, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (324, '141028', 644, 643, '吉县', 315, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (325, '141029', 646, 645, '乡宁县', 315, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (326, '141030', 648, 647, '大宁县', 315, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (327, '141031', 650, 649, '隰县', 315, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (328, '141032', 652, 651, '永和县', 315, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (329, '141033', 654, 653, '蒲县', 315, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (330, '141034', 656, 655, '汾西县', 315, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (331, '141081', 658, 657, '侯马市', 315, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (332, '141082', 660, 659, '霍州市', 315, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (333, '141100', 689, 662, '吕梁市', 218, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (334, '141102', 664, 663, '离石区', 333, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (335, '141121', 666, 665, '文水县', 333, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (336, '141122', 668, 667, '交城县', 333, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (337, '141123', 670, 669, '兴县', 333, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (338, '141124', 672, 671, '临县', 333, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (339, '141125', 674, 673, '柳林县', 333, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (340, '141126', 676, 675, '石楼县', 333, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (341, '141127', 678, 677, '岚县', 333, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (342, '141128', 680, 679, '方山县', 333, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (343, '141129', 682, 681, '中阳县', 333, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (344, '141130', 684, 683, '交口县', 333, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (345, '141181', 686, 685, '孝义市', 333, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (346, '141182', 688, 687, '汾阳市', 333, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (347, '150000', 922, 691, '内蒙古自治区', 218, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (348, '150100', 711, 692, '呼和浩特市', 347, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (349, '150102', 694, 693, '新城区', 348, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (350, '150103', 696, 695, '回民区', 348, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (351, '150104', 698, 697, '玉泉区', 348, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (352, '150105', 700, 699, '赛罕区', 348, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (353, '150121', 702, 701, '土默特左旗', 348, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (354, '150122', 704, 703, '托克托县', 348, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (355, '150123', 706, 705, '和林格尔县', 348, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (356, '150124', 708, 707, '清水河县', 348, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (357, '150125', 710, 709, '武川县', 348, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (358, '150200', 731, 712, '包头市', 347, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (359, '150202', 714, 713, '东河区', 358, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (360, '150203', 716, 715, '昆都仑区', 358, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (361, '150204', 718, 717, '青山区', 358, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (362, '150205', 720, 719, '石拐区', 358, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (363, '150206', 722, 721, '白云鄂博矿区', 358, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (364, '150207', 724, 723, '九原区', 358, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (365, '150221', 726, 725, '土默特右旗', 358, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (366, '150222', 728, 727, '固阳县', 358, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (367, '150223', 730, 729, '达尔罕茂明安联合旗', 358, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (368, '150300', 739, 732, '乌海市', 347, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (369, '150302', 734, 733, '海勃湾区', 368, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (370, '150303', 736, 735, '海南区', 368, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (371, '150304', 738, 737, '乌达区', 368, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (372, '150400', 765, 740, '赤峰市', 347, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (373, '150402', 742, 741, '红山区', 372, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (374, '150403', 744, 743, '元宝山区', 372, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (375, '150404', 746, 745, '松山区', 372, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (376, '150421', 748, 747, '阿鲁科尔沁旗', 372, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (377, '150422', 750, 749, '巴林左旗', 372, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (378, '150423', 752, 751, '巴林右旗', 372, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (379, '150424', 754, 753, '林西县', 372, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (380, '150425', 756, 755, '克什克腾旗', 372, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (381, '150426', 758, 757, '翁牛特旗', 372, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (382, '150428', 760, 759, '喀喇沁旗', 372, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (383, '150429', 762, 761, '宁城县', 372, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (384, '150430', 764, 763, '敖汉旗', 372, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (385, '150500', 783, 766, '通辽市', 347, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (386, '150502', 768, 767, '科尔沁区', 385, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (387, '150521', 770, 769, '科尔沁左翼中旗', 385, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (388, '150522', 772, 771, '科尔沁左翼后旗', 385, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (389, '150523', 774, 773, '开鲁县', 385, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (390, '150524', 776, 775, '库伦旗', 385, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (391, '150525', 778, 777, '奈曼旗', 385, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (392, '150526', 780, 779, '扎鲁特旗', 385, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (393, '150581', 782, 781, '霍林郭勒市', 385, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (394, '150600', 803, 784, '鄂尔多斯市', 347, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (395, '150602', 786, 785, '东胜区', 394, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (396, '150603', 788, 787, '康巴什区', 394, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (397, '150621', 790, 789, '达拉特旗', 394, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (398, '150622', 792, 791, '准格尔旗', 394, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (399, '150623', 794, 793, '鄂托克前旗', 394, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (400, '150624', 796, 795, '鄂托克旗', 394, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (401, '150625', 798, 797, '杭锦旗', 394, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (402, '150626', 800, 799, '乌审旗', 394, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (403, '150627', 802, 801, '伊金霍洛旗', 394, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (404, '150700', 833, 804, '呼伦贝尔市', 347, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (405, '150702', 806, 805, '海拉尔区', 404, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (406, '150703', 808, 807, '扎赉诺尔区', 404, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (407, '150721', 810, 809, '阿荣旗', 404, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (408, '150722', 812, 811, '莫力达瓦达斡尔族自治旗', 404, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (409, '150723', 814, 813, '鄂伦春自治旗', 404, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (410, '150724', 816, 815, '鄂温克族自治旗', 404, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (411, '150725', 818, 817, '陈巴尔虎旗', 404, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (412, '150726', 820, 819, '新巴尔虎左旗', 404, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (413, '150727', 822, 821, '新巴尔虎右旗', 404, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (414, '150781', 824, 823, '满洲里市', 404, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (415, '150782', 826, 825, '牙克石市', 404, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (416, '150783', 828, 827, '扎兰屯市', 404, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (417, '150784', 830, 829, '额尔古纳市', 404, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (418, '150785', 832, 831, '根河市', 404, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (419, '150800', 849, 834, '巴彦淖尔市', 347, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (420, '150802', 836, 835, '临河区', 419, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (421, '150821', 838, 837, '五原县', 419, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (422, '150822', 840, 839, '磴口县', 419, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (423, '150823', 842, 841, '乌拉特前旗', 419, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (424, '150824', 844, 843, '乌拉特中旗', 419, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (425, '150825', 846, 845, '乌拉特后旗', 419, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (426, '150826', 848, 847, '杭锦后旗', 419, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (427, '150900', 873, 850, '乌兰察布市', 347, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (428, '150902', 852, 851, '集宁区', 427, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (429, '150921', 854, 853, '卓资县', 427, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (430, '150922', 856, 855, '化德县', 427, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (431, '150923', 858, 857, '商都县', 427, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (432, '150924', 860, 859, '兴和县', 427, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (433, '150925', 862, 861, '凉城县', 427, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (434, '150926', 864, 863, '察哈尔右翼前旗', 427, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (435, '150927', 866, 865, '察哈尔右翼中旗', 427, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (436, '150928', 868, 867, '察哈尔右翼后旗', 427, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (437, '150929', 870, 869, '四子王旗', 427, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (438, '150981', 872, 871, '丰镇市', 427, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (439, '152200', 887, 874, '兴安盟', 347, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (440, '152201', 876, 875, '乌兰浩特市', 439, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (441, '152202', 878, 877, '阿尔山市', 439, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (442, '152221', 880, 879, '科尔沁右翼前旗', 439, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (443, '152222', 882, 881, '科尔沁右翼中旗', 439, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (444, '152223', 884, 883, '扎赉特旗', 439, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (445, '152224', 886, 885, '突泉县', 439, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (446, '152500', 913, 888, '锡林郭勒盟', 347, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (447, '152501', 890, 889, '二连浩特市', 446, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (448, '152502', 892, 891, '锡林浩特市', 446, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (449, '152522', 894, 893, '阿巴嘎旗', 446, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (450, '152523', 896, 895, '苏尼特左旗', 446, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (451, '152524', 898, 897, '苏尼特右旗', 446, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (452, '152525', 900, 899, '东乌珠穆沁旗', 446, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (453, '152526', 902, 901, '西乌珠穆沁旗', 446, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (454, '152527', 904, 903, '太仆寺旗', 446, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (455, '152528', 906, 905, '镶黄旗', 446, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (456, '152529', 908, 907, '正镶白旗', 446, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (457, '152530', 910, 909, '正蓝旗', 446, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (458, '152531', 912, 911, '多伦县', 446, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (459, '152900', 921, 914, '阿拉善盟', 347, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (460, '152921', 916, 915, '阿拉善左旗', 459, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (461, '152922', 918, 917, '阿拉善右旗', 459, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (462, '152923', 920, 919, '额济纳旗', 459, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (463, '210000', 1152, 923, '辽宁省', 347, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (464, '210100', 951, 924, '沈阳市', 463, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (465, '210102', 926, 925, '和平区', 464, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (466, '210103', 928, 927, '沈河区', 464, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (467, '210104', 930, 929, '大东区', 464, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (468, '210105', 932, 931, '皇姑区', 464, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (469, '210106', 934, 933, '铁西区', 464, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (470, '210111', 936, 935, '苏家屯区', 464, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (471, '210112', 938, 937, '浑南区', 464, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (472, '210113', 940, 939, '沈北新区', 464, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (473, '210114', 942, 941, '于洪区', 464, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (474, '210115', 944, 943, '辽中区', 464, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (475, '210123', 946, 945, '康平县', 464, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (476, '210124', 948, 947, '法库县', 464, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (477, '210181', 950, 949, '新民市', 464, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (478, '210200', 973, 952, '大连市', 463, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (479, '210202', 954, 953, '中山区', 478, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (480, '210203', 956, 955, '西岗区', 478, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (481, '210204', 958, 957, '沙河口区', 478, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (482, '210211', 960, 959, '甘井子区', 478, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (483, '210212', 962, 961, '旅顺口区', 478, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (484, '210213', 964, 963, '金州区', 478, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (485, '210214', 966, 965, '普兰店区', 478, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (486, '210224', 968, 967, '长海县', 478, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (487, '210281', 970, 969, '瓦房店市', 478, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (488, '210283', 972, 971, '庄河市', 478, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (489, '210300', 989, 974, '鞍山市', 463, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (490, '210302', 976, 975, '铁东区', 489, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (491, '210303', 978, 977, '铁西区', 489, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (492, '210304', 980, 979, '立山区', 489, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (493, '210311', 982, 981, '千山区', 489, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (494, '210321', 984, 983, '台安县', 489, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (495, '210323', 986, 985, '岫岩满族自治县', 489, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (496, '210381', 988, 987, '海城市', 489, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (497, '210400', 1005, 990, '抚顺市', 463, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (498, '210402', 992, 991, '新抚区', 497, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (499, '210403', 994, 993, '东洲区', 497, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (500, '210404', 996, 995, '望花区', 497, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (501, '210411', 998, 997, '顺城区', 497, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (502, '210421', 1000, 999, '抚顺县', 497, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (503, '210422', 1002, 1001, '新宾满族自治县', 497, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (504, '210423', 1004, 1003, '清原满族自治县', 497, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (505, '210500', 1019, 1006, '本溪市', 463, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (506, '210502', 1008, 1007, '平山区', 505, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (507, '210503', 1010, 1009, '溪湖区', 505, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (508, '210504', 1012, 1011, '明山区', 505, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (509, '210505', 1014, 1013, '南芬区', 505, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (510, '210521', 1016, 1015, '本溪满族自治县', 505, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (511, '210522', 1018, 1017, '桓仁满族自治县', 505, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (512, '210600', 1033, 1020, '丹东市', 463, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (513, '210602', 1022, 1021, '元宝区', 512, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (514, '210603', 1024, 1023, '振兴区', 512, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (515, '210604', 1026, 1025, '振安区', 512, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (516, '210624', 1028, 1027, '宽甸满族自治县', 512, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (517, '210681', 1030, 1029, '东港市', 512, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (518, '210682', 1032, 1031, '凤城市', 512, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (519, '210700', 1049, 1034, '锦州市', 463, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (520, '210702', 1036, 1035, '古塔区', 519, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (521, '210703', 1038, 1037, '凌河区', 519, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (522, '210711', 1040, 1039, '太和区', 519, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (523, '210726', 1042, 1041, '黑山县', 519, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (524, '210727', 1044, 1043, '义县', 519, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (525, '210781', 1046, 1045, '凌海市', 519, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (526, '210782', 1048, 1047, '北镇市', 519, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (527, '210800', 1063, 1050, '营口市', 463, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (528, '210802', 1052, 1051, '站前区', 527, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (529, '210803', 1054, 1053, '西市区', 527, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (530, '210804', 1056, 1055, '鲅鱼圈区', 527, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (531, '210811', 1058, 1057, '老边区', 527, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (532, '210881', 1060, 1059, '盖州市', 527, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (533, '210882', 1062, 1061, '大石桥市', 527, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (534, '210900', 1079, 1064, '阜新市', 463, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (535, '210902', 1066, 1065, '海州区', 534, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (536, '210903', 1068, 1067, '新邱区', 534, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (537, '210904', 1070, 1069, '太平区', 534, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (538, '210905', 1072, 1071, '清河门区', 534, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (539, '210911', 1074, 1073, '细河区', 534, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (540, '210921', 1076, 1075, '阜新蒙古族自治县', 534, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (541, '210922', 1078, 1077, '彰武县', 534, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (542, '211000', 1095, 1080, '辽阳市', 463, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (543, '211002', 1082, 1081, '白塔区', 542, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (544, '211003', 1084, 1083, '文圣区', 542, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (545, '211004', 1086, 1085, '宏伟区', 542, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (546, '211005', 1088, 1087, '弓长岭区', 542, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (547, '211011', 1090, 1089, '太子河区', 542, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (548, '211021', 1092, 1091, '辽阳县', 542, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (549, '211081', 1094, 1093, '灯塔市', 542, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (550, '211100', 1105, 1096, '盘锦市', 463, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (551, '211102', 1098, 1097, '双台子区', 550, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (552, '211103', 1100, 1099, '兴隆台区', 550, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (553, '211104', 1102, 1101, '大洼区', 550, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (554, '211122', 1104, 1103, '盘山县', 550, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (555, '211200', 1121, 1106, '铁岭市', 463, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (556, '211202', 1108, 1107, '银州区', 555, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (557, '211204', 1110, 1109, '清河区', 555, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (558, '211221', 1112, 1111, '铁岭县', 555, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (559, '211223', 1114, 1113, '西丰县', 555, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (560, '211224', 1116, 1115, '昌图县', 555, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (561, '211281', 1118, 1117, '调兵山市', 555, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (562, '211282', 1120, 1119, '开原市', 555, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (563, '211300', 1137, 1122, '朝阳市', 463, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (564, '211302', 1124, 1123, '双塔区', 563, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (565, '211303', 1126, 1125, '龙城区', 563, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (566, '211321', 1128, 1127, '朝阳县', 563, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (567, '211322', 1130, 1129, '建平县', 563, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (568, '211324', 1132, 1131, '喀喇沁左翼蒙古族自治县', 563, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (569, '211381', 1134, 1133, '北票市', 563, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (570, '211382', 1136, 1135, '凌源市', 563, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (571, '211400', 1151, 1138, '葫芦岛市', 463, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (572, '211402', 1140, 1139, '连山区', 571, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (573, '211403', 1142, 1141, '龙港区', 571, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (574, '211404', 1144, 1143, '南票区', 571, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (575, '211421', 1146, 1145, '绥中县', 571, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (576, '211422', 1148, 1147, '建昌县', 571, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (577, '211481', 1150, 1149, '兴城市', 571, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (578, '220000', 1292, 1153, '吉林省', 463, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (579, '220100', 1175, 1154, '长春市', 578, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (580, '220102', 1156, 1155, '南关区', 579, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (581, '220103', 1158, 1157, '宽城区', 579, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (582, '220104', 1160, 1159, '朝阳区', 579, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (583, '220105', 1162, 1161, '二道区', 579, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (584, '220106', 1164, 1163, '绿园区', 579, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (585, '220112', 1166, 1165, '双阳区', 579, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (586, '220113', 1168, 1167, '九台区', 579, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (587, '220122', 1170, 1169, '农安县', 579, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (588, '220182', 1172, 1171, '榆树市', 579, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (589, '220183', 1174, 1173, '德惠市', 579, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (590, '220200', 1195, 1176, '吉林市', 578, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (591, '220202', 1178, 1177, '昌邑区', 590, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (592, '220203', 1180, 1179, '龙潭区', 590, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (593, '220204', 1182, 1181, '船营区', 590, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (594, '220211', 1184, 1183, '丰满区', 590, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (595, '220221', 1186, 1185, '永吉县', 590, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (596, '220281', 1188, 1187, '蛟河市', 590, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (597, '220282', 1190, 1189, '桦甸市', 590, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (598, '220283', 1192, 1191, '舒兰市', 590, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (599, '220284', 1194, 1193, '磐石市', 590, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (600, '220300', 1209, 1196, '四平市', 578, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (601, '220302', 1198, 1197, '铁西区', 600, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (602, '220303', 1200, 1199, '铁东区', 600, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (603, '220322', 1202, 1201, '梨树县', 600, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (604, '220323', 1204, 1203, '伊通满族自治县', 600, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (605, '220381', 1206, 1205, '公主岭市', 600, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (606, '220382', 1208, 1207, '双辽市', 600, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (607, '220400', 1219, 1210, '辽源市', 578, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (608, '220402', 1212, 1211, '龙山区', 607, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (609, '220403', 1214, 1213, '西安区', 607, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (610, '220421', 1216, 1215, '东丰县', 607, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (611, '220422', 1218, 1217, '东辽县', 607, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (612, '220500', 1235, 1220, '通化市', 578, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (613, '220502', 1222, 1221, '东昌区', 612, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (614, '220503', 1224, 1223, '二道江区', 612, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (615, '220521', 1226, 1225, '通化县', 612, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (616, '220523', 1228, 1227, '辉南县', 612, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (617, '220524', 1230, 1229, '柳河县', 612, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (618, '220581', 1232, 1231, '梅河口市', 612, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (619, '220582', 1234, 1233, '集安市', 612, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (620, '220600', 1249, 1236, '白山市', 578, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (621, '220602', 1238, 1237, '浑江区', 620, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (622, '220605', 1240, 1239, '江源区', 620, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (623, '220621', 1242, 1241, '抚松县', 620, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (624, '220622', 1244, 1243, '靖宇县', 620, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (625, '220623', 1246, 1245, '长白朝鲜族自治县', 620, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (626, '220681', 1248, 1247, '临江市', 620, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (627, '220700', 1261, 1250, '松原市', 578, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (628, '220702', 1252, 1251, '宁江区', 627, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (629, '220721', 1254, 1253, '前郭尔罗斯蒙古族自治县', 627, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (630, '220722', 1256, 1255, '长岭县', 627, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (631, '220723', 1258, 1257, '乾安县', 627, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (632, '220781', 1260, 1259, '扶余市', 627, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (633, '220800', 1273, 1262, '白城市', 578, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (634, '220802', 1264, 1263, '洮北区', 633, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (635, '220821', 1266, 1265, '镇赉县', 633, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (636, '220822', 1268, 1267, '通榆县', 633, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (637, '220881', 1270, 1269, '洮南市', 633, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (638, '220882', 1272, 1271, '大安市', 633, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (639, '222400', 1291, 1274, '延边朝鲜族自治州', 578, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (640, '222401', 1276, 1275, '延吉市', 639, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (641, '222402', 1278, 1277, '图们市', 639, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (642, '222403', 1280, 1279, '敦化市', 639, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (643, '222404', 1282, 1281, '珲春市', 639, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (644, '222405', 1284, 1283, '龙井市', 639, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (645, '222406', 1286, 1285, '和龙市', 639, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (646, '222424', 1288, 1287, '汪清县', 639, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (647, '222426', 1290, 1289, '安图县', 639, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (648, '230000', 1576, 1293, '黑龙江省', 578, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (649, '230100', 1331, 1294, '哈尔滨市', 648, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (650, '230102', 1296, 1295, '道里区', 649, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (651, '230103', 1298, 1297, '南岗区', 649, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (652, '230104', 1300, 1299, '道外区', 649, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (653, '230108', 1302, 1301, '平房区', 649, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (654, '230109', 1304, 1303, '松北区', 649, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (655, '230110', 1306, 1305, '香坊区', 649, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (656, '230111', 1308, 1307, '呼兰区', 649, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (657, '230112', 1310, 1309, '阿城区', 649, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (658, '230113', 1312, 1311, '双城区', 649, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (659, '230123', 1314, 1313, '依兰县', 649, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (660, '230124', 1316, 1315, '方正县', 649, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (661, '230125', 1318, 1317, '宾县', 649, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (662, '230126', 1320, 1319, '巴彦县', 649, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (663, '230127', 1322, 1321, '木兰县', 649, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (664, '230128', 1324, 1323, '通河县', 649, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (665, '230129', 1326, 1325, '延寿县', 649, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (666, '230183', 1328, 1327, '尚志市', 649, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (667, '230184', 1330, 1329, '五常市', 649, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (668, '230200', 1365, 1332, '齐齐哈尔市', 648, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (669, '230202', 1334, 1333, '龙沙区', 668, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (670, '230203', 1336, 1335, '建华区', 668, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (671, '230204', 1338, 1337, '铁锋区', 668, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (672, '230205', 1340, 1339, '昂昂溪区', 668, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (673, '230206', 1342, 1341, '富拉尔基区', 668, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (674, '230207', 1344, 1343, '碾子山区', 668, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (675, '230208', 1346, 1345, '梅里斯达斡尔族区', 668, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (676, '230221', 1348, 1347, '龙江县', 668, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (677, '230223', 1350, 1349, '依安县', 668, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (678, '230224', 1352, 1351, '泰来县', 668, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (679, '230225', 1354, 1353, '甘南县', 668, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (680, '230227', 1356, 1355, '富裕县', 668, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (681, '230229', 1358, 1357, '克山县', 668, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (682, '230230', 1360, 1359, '克东县', 668, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (683, '230231', 1362, 1361, '拜泉县', 668, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (684, '230281', 1364, 1363, '讷河市', 668, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (685, '230300', 1385, 1366, '鸡西市', 648, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (686, '230302', 1368, 1367, '鸡冠区', 685, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (687, '230303', 1370, 1369, '恒山区', 685, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (688, '230304', 1372, 1371, '滴道区', 685, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (689, '230305', 1374, 1373, '梨树区', 685, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (690, '230306', 1376, 1375, '城子河区', 685, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (691, '230307', 1378, 1377, '麻山区', 685, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (692, '230321', 1380, 1379, '鸡东县', 685, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (693, '230381', 1382, 1381, '虎林市', 685, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (694, '230382', 1384, 1383, '密山市', 685, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (695, '230400', 1403, 1386, '鹤岗市', 648, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (696, '230402', 1388, 1387, '向阳区', 695, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (697, '230403', 1390, 1389, '工农区', 695, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (698, '230404', 1392, 1391, '南山区', 695, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (699, '230405', 1394, 1393, '兴安区', 695, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (700, '230406', 1396, 1395, '东山区', 695, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (701, '230407', 1398, 1397, '兴山区', 695, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (702, '230421', 1400, 1399, '萝北县', 695, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (703, '230422', 1402, 1401, '绥滨县', 695, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (704, '230500', 1421, 1404, '双鸭山市', 648, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (705, '230502', 1406, 1405, '尖山区', 704, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (706, '230503', 1408, 1407, '岭东区', 704, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (707, '230505', 1410, 1409, '四方台区', 704, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (708, '230506', 1412, 1411, '宝山区', 704, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (709, '230521', 1414, 1413, '集贤县', 704, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (710, '230522', 1416, 1415, '友谊县', 704, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (711, '230523', 1418, 1417, '宝清县', 704, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (712, '230524', 1420, 1419, '饶河县', 704, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (713, '230600', 1441, 1422, '大庆市', 648, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (714, '230602', 1424, 1423, '萨尔图区', 713, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (715, '230603', 1426, 1425, '龙凤区', 713, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (716, '230604', 1428, 1427, '让胡路区', 713, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (717, '230605', 1430, 1429, '红岗区', 713, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (718, '230606', 1432, 1431, '大同区', 713, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (719, '230621', 1434, 1433, '肇州县', 713, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (720, '230622', 1436, 1435, '肇源县', 713, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (721, '230623', 1438, 1437, '林甸县', 713, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (722, '230624', 1440, 1439, '杜尔伯特蒙古族自治县', 713, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (723, '230700', 1477, 1442, '伊春市', 648, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (724, '230702', 1444, 1443, '伊春区', 723, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (725, '230703', 1446, 1445, '南岔区', 723, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (726, '230704', 1448, 1447, '友好区', 723, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (727, '230705', 1450, 1449, '西林区', 723, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (728, '230706', 1452, 1451, '翠峦区', 723, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (729, '230707', 1454, 1453, '新青区', 723, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (730, '230708', 1456, 1455, '美溪区', 723, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (731, '230709', 1458, 1457, '金山屯区', 723, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (732, '230710', 1460, 1459, '五营区', 723, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (733, '230711', 1462, 1461, '乌马河区', 723, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (734, '230712', 1464, 1463, '汤旺河区', 723, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (735, '230713', 1466, 1465, '带岭区', 723, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (736, '230714', 1468, 1467, '乌伊岭区', 723, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (737, '230715', 1470, 1469, '红星区', 723, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (738, '230716', 1472, 1471, '上甘岭区', 723, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (739, '230722', 1474, 1473, '嘉荫县', 723, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (740, '230781', 1476, 1475, '铁力市', 723, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (741, '230800', 1499, 1478, '佳木斯市', 648, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (742, '230803', 1480, 1479, '向阳区', 741, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (743, '230804', 1482, 1481, '前进区', 741, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (744, '230805', 1484, 1483, '东风区', 741, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (745, '230811', 1486, 1485, '郊区', 741, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (746, '230822', 1488, 1487, '桦南县', 741, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (747, '230826', 1490, 1489, '桦川县', 741, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (748, '230828', 1492, 1491, '汤原县', 741, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (749, '230881', 1494, 1493, '同江市', 741, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (750, '230882', 1496, 1495, '富锦市', 741, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (751, '230883', 1498, 1497, '抚远市', 741, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (752, '230900', 1509, 1500, '七台河市', 648, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (753, '230902', 1502, 1501, '新兴区', 752, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (754, '230903', 1504, 1503, '桃山区', 752, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (755, '230904', 1506, 1505, '茄子河区', 752, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (756, '230921', 1508, 1507, '勃利县', 752, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (757, '231000', 1531, 1510, '牡丹江市', 648, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (758, '231002', 1512, 1511, '东安区', 757, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (759, '231003', 1514, 1513, '阳明区', 757, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (760, '231004', 1516, 1515, '爱民区', 757, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (761, '231005', 1518, 1517, '西安区', 757, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (762, '231025', 1520, 1519, '林口县', 757, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (763, '231081', 1522, 1521, '绥芬河市', 757, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (764, '231083', 1524, 1523, '海林市', 757, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (765, '231084', 1526, 1525, '宁安市', 757, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (766, '231085', 1528, 1527, '穆棱市', 757, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (767, '231086', 1530, 1529, '东宁市', 757, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (768, '231100', 1545, 1532, '黑河市', 648, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (769, '231102', 1534, 1533, '爱辉区', 768, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (770, '231121', 1536, 1535, '嫩江县', 768, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (771, '231123', 1538, 1537, '逊克县', 768, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (772, '231124', 1540, 1539, '孙吴县', 768, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (773, '231181', 1542, 1541, '北安市', 768, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (774, '231182', 1544, 1543, '五大连池市', 768, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (775, '231200', 1567, 1546, '绥化市', 648, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (776, '231202', 1548, 1547, '北林区', 775, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (777, '231221', 1550, 1549, '望奎县', 775, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (778, '231222', 1552, 1551, '兰西县', 775, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (779, '231223', 1554, 1553, '青冈县', 775, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (780, '231224', 1556, 1555, '庆安县', 775, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (781, '231225', 1558, 1557, '明水县', 775, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (782, '231226', 1560, 1559, '绥棱县', 775, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (783, '231281', 1562, 1561, '安达市', 775, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (784, '231282', 1564, 1563, '肇东市', 775, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (785, '231283', 1566, 1565, '海伦市', 775, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (786, '232700', 1575, 1568, '大兴安岭地区', 648, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (787, '232701', 1570, 1569, '漠河市', 786, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (788, '232721', 1572, 1571, '呼玛县', 786, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (789, '232722', 1574, 1573, '塔河县', 786, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (790, '310000', 1612, 1577, '上海市', 648, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (791, '310100', 1611, 1578, '上海市', 790, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (792, '310101', 1580, 1579, '黄浦区', 791, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (793, '310104', 1582, 1581, '徐汇区', 791, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (794, '310105', 1584, 1583, '长宁区', 791, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (795, '310106', 1586, 1585, '静安区', 791, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (796, '310107', 1588, 1587, '普陀区', 791, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (797, '310109', 1590, 1589, '虹口区', 791, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (798, '310110', 1592, 1591, '杨浦区', 791, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (799, '310112', 1594, 1593, '闵行区', 791, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (800, '310113', 1596, 1595, '宝山区', 791, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (801, '310114', 1598, 1597, '嘉定区', 791, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (802, '310115', 1600, 1599, '浦东新区', 791, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (803, '310116', 1602, 1601, '金山区', 791, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (804, '310117', 1604, 1603, '松江区', 791, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (805, '310118', 1606, 1605, '青浦区', 791, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (806, '310120', 1608, 1607, '奉贤区', 791, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (807, '310151', 1610, 1609, '崇明区', 791, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (808, '320000', 1832, 1613, '江苏省', 790, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (809, '320100', 1637, 1614, '南京市', 808, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (810, '320102', 1616, 1615, '玄武区', 809, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (811, '320104', 1618, 1617, '秦淮区', 809, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (812, '320105', 1620, 1619, '建邺区', 809, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (813, '320106', 1622, 1621, '鼓楼区', 809, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (814, '320111', 1624, 1623, '浦口区', 809, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (815, '320113', 1626, 1625, '栖霞区', 809, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (816, '320114', 1628, 1627, '雨花台区', 809, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (817, '320115', 1630, 1629, '江宁区', 809, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (818, '320116', 1632, 1631, '六合区', 809, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (819, '320117', 1634, 1633, '溧水区', 809, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (820, '320118', 1636, 1635, '高淳区', 809, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (821, '320200', 1653, 1638, '无锡市', 808, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (822, '320205', 1640, 1639, '锡山区', 821, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (823, '320206', 1642, 1641, '惠山区', 821, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (824, '320211', 1644, 1643, '滨湖区', 821, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (825, '320213', 1646, 1645, '梁溪区', 821, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (826, '320214', 1648, 1647, '新吴区', 821, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (827, '320281', 1650, 1649, '江阴市', 821, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (828, '320282', 1652, 1651, '宜兴市', 821, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (829, '320300', 1675, 1654, '徐州市', 808, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (830, '320302', 1656, 1655, '鼓楼区', 829, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (831, '320303', 1658, 1657, '云龙区', 829, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (832, '320305', 1660, 1659, '贾汪区', 829, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (833, '320311', 1662, 1661, '泉山区', 829, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (834, '320312', 1664, 1663, '铜山区', 829, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (835, '320321', 1666, 1665, '丰县', 829, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (836, '320322', 1668, 1667, '沛县', 829, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (837, '320324', 1670, 1669, '睢宁县', 829, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (838, '320381', 1672, 1671, '新沂市', 829, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (839, '320382', 1674, 1673, '邳州市', 829, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (840, '320400', 1689, 1676, '常州市', 808, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (841, '320402', 1678, 1677, '天宁区', 840, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (842, '320404', 1680, 1679, '钟楼区', 840, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (843, '320411', 1682, 1681, '新北区', 840, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (844, '320412', 1684, 1683, '武进区', 840, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (845, '320413', 1686, 1685, '金坛区', 840, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (846, '320481', 1688, 1687, '溧阳市', 840, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (847, '320500', 1709, 1690, '苏州市', 808, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (848, '320505', 1692, 1691, '虎丘区', 847, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (849, '320506', 1694, 1693, '吴中区', 847, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (850, '320507', 1696, 1695, '相城区', 847, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (851, '320508', 1698, 1697, '姑苏区', 847, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (852, '320509', 1700, 1699, '吴江区', 847, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (853, '320581', 1702, 1701, '常熟市', 847, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (854, '320582', 1704, 1703, '张家港市', 847, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (855, '320583', 1706, 1705, '昆山市', 847, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (856, '320585', 1708, 1707, '太仓市', 847, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (857, '320600', 1727, 1710, '南通市', 808, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (858, '320602', 1712, 1711, '崇川区', 857, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (859, '320611', 1714, 1713, '港闸区', 857, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (860, '320612', 1716, 1715, '通州区', 857, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (861, '320623', 1718, 1717, '如东县', 857, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (862, '320681', 1720, 1719, '启东市', 857, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (863, '320682', 1722, 1721, '如皋市', 857, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (864, '320684', 1724, 1723, '海门市', 857, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (865, '320685', 1726, 1725, '海安市', 857, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (866, '320700', 1741, 1728, '连云港市', 808, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (867, '320703', 1730, 1729, '连云区', 866, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (868, '320706', 1732, 1731, '海州区', 866, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (869, '320707', 1734, 1733, '赣榆区', 866, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (870, '320722', 1736, 1735, '东海县', 866, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (871, '320723', 1738, 1737, '灌云县', 866, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (872, '320724', 1740, 1739, '灌南县', 866, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (873, '320800', 1757, 1742, '淮安市', 808, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (874, '320803', 1744, 1743, '淮安区', 873, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (875, '320804', 1746, 1745, '淮阴区', 873, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (876, '320812', 1748, 1747, '清江浦区', 873, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (877, '320813', 1750, 1749, '洪泽区', 873, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (878, '320826', 1752, 1751, '涟水县', 873, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (879, '320830', 1754, 1753, '盱眙县', 873, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (880, '320831', 1756, 1755, '金湖县', 873, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (881, '320900', 1777, 1758, '盐城市', 808, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (882, '320902', 1760, 1759, '亭湖区', 881, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (883, '320903', 1762, 1761, '盐都区', 881, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (884, '320904', 1764, 1763, '大丰区', 881, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (885, '320921', 1766, 1765, '响水县', 881, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (886, '320922', 1768, 1767, '滨海县', 881, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (887, '320923', 1770, 1769, '阜宁县', 881, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (888, '320924', 1772, 1771, '射阳县', 881, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (889, '320925', 1774, 1773, '建湖县', 881, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (890, '320981', 1776, 1775, '东台市', 881, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (891, '321000', 1791, 1778, '扬州市', 808, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (892, '321002', 1780, 1779, '广陵区', 891, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (893, '321003', 1782, 1781, '邗江区', 891, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (894, '321012', 1784, 1783, '江都区', 891, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (895, '321023', 1786, 1785, '宝应县', 891, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (896, '321081', 1788, 1787, '仪征市', 891, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (897, '321084', 1790, 1789, '高邮市', 891, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (898, '321100', 1805, 1792, '镇江市', 808, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (899, '321102', 1794, 1793, '京口区', 898, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (900, '321111', 1796, 1795, '润州区', 898, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (901, '321112', 1798, 1797, '丹徒区', 898, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (902, '321181', 1800, 1799, '丹阳市', 898, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (903, '321182', 1802, 1801, '扬中市', 898, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (904, '321183', 1804, 1803, '句容市', 898, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (905, '321200', 1819, 1806, '泰州市', 808, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (906, '321202', 1808, 1807, '海陵区', 905, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (907, '321203', 1810, 1809, '高港区', 905, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (908, '321204', 1812, 1811, '姜堰区', 905, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (909, '321281', 1814, 1813, '兴化市', 905, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (910, '321282', 1816, 1815, '靖江市', 905, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (911, '321283', 1818, 1817, '泰兴市', 905, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (912, '321300', 1831, 1820, '宿迁市', 808, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (913, '321302', 1822, 1821, '宿城区', 912, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (914, '321311', 1824, 1823, '宿豫区', 912, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (915, '321322', 1826, 1825, '沭阳县', 912, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (916, '321323', 1828, 1827, '泗阳县', 912, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (917, '321324', 1830, 1829, '泗洪县', 912, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (918, '330000', 2034, 1833, '浙江省', 808, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (919, '330100', 1861, 1834, '杭州市', 918, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (920, '330102', 1836, 1835, '上城区', 919, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (921, '330103', 1838, 1837, '下城区', 919, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (922, '330104', 1840, 1839, '江干区', 919, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (923, '330105', 1842, 1841, '拱墅区', 919, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (924, '330106', 1844, 1843, '西湖区', 919, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (925, '330108', 1846, 1845, '滨江区', 919, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (926, '330109', 1848, 1847, '萧山区', 919, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (927, '330110', 1850, 1849, '余杭区', 919, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (928, '330111', 1852, 1851, '富阳区', 919, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (929, '330112', 1854, 1853, '临安区', 919, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (930, '330122', 1856, 1855, '桐庐县', 919, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (931, '330127', 1858, 1857, '淳安县', 919, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (932, '330182', 1860, 1859, '建德市', 919, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (933, '330200', 1883, 1862, '宁波市', 918, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (934, '330203', 1864, 1863, '海曙区', 933, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (935, '330205', 1866, 1865, '江北区', 933, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (936, '330206', 1868, 1867, '北仑区', 933, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (937, '330211', 1870, 1869, '镇海区', 933, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (938, '330212', 1872, 1871, '鄞州区', 933, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (939, '330213', 1874, 1873, '奉化区', 933, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (940, '330225', 1876, 1875, '象山县', 933, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (941, '330226', 1878, 1877, '宁海县', 933, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (942, '330281', 1880, 1879, '余姚市', 933, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (943, '330282', 1882, 1881, '慈溪市', 933, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (944, '330300', 1907, 1884, '温州市', 918, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (945, '330302', 1886, 1885, '鹿城区', 944, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (946, '330303', 1888, 1887, '龙湾区', 944, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (947, '330304', 1890, 1889, '瓯海区', 944, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (948, '330305', 1892, 1891, '洞头区', 944, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (949, '330324', 1894, 1893, '永嘉县', 944, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (950, '330326', 1896, 1895, '平阳县', 944, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (951, '330327', 1898, 1897, '苍南县', 944, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (952, '330328', 1900, 1899, '文成县', 944, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (953, '330329', 1902, 1901, '泰顺县', 944, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (954, '330381', 1904, 1903, '瑞安市', 944, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (955, '330382', 1906, 1905, '乐清市', 944, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (956, '330400', 1923, 1908, '嘉兴市', 918, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (957, '330402', 1910, 1909, '南湖区', 956, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (958, '330411', 1912, 1911, '秀洲区', 956, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (959, '330421', 1914, 1913, '嘉善县', 956, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (960, '330424', 1916, 1915, '海盐县', 956, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (961, '330481', 1918, 1917, '海宁市', 956, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (962, '330482', 1920, 1919, '平湖市', 956, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (963, '330483', 1922, 1921, '桐乡市', 956, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (964, '330500', 1935, 1924, '湖州市', 918, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (965, '330502', 1926, 1925, '吴兴区', 964, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (966, '330503', 1928, 1927, '南浔区', 964, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (967, '330521', 1930, 1929, '德清县', 964, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (968, '330522', 1932, 1931, '长兴县', 964, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (969, '330523', 1934, 1933, '安吉县', 964, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (970, '330600', 1949, 1936, '绍兴市', 918, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (971, '330602', 1938, 1937, '越城区', 970, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (972, '330603', 1940, 1939, '柯桥区', 970, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (973, '330604', 1942, 1941, '上虞区', 970, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (974, '330624', 1944, 1943, '新昌县', 970, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (975, '330681', 1946, 1945, '诸暨市', 970, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (976, '330683', 1948, 1947, '嵊州市', 970, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (977, '330700', 1969, 1950, '金华市', 918, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (978, '330702', 1952, 1951, '婺城区', 977, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (979, '330703', 1954, 1953, '金东区', 977, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (980, '330723', 1956, 1955, '武义县', 977, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (981, '330726', 1958, 1957, '浦江县', 977, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (982, '330727', 1960, 1959, '磐安县', 977, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (983, '330781', 1962, 1961, '兰溪市', 977, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (984, '330782', 1964, 1963, '义乌市', 977, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (985, '330783', 1966, 1965, '东阳市', 977, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (986, '330784', 1968, 1967, '永康市', 977, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (987, '330800', 1983, 1970, '衢州市', 918, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (988, '330802', 1972, 1971, '柯城区', 987, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (989, '330803', 1974, 1973, '衢江区', 987, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (990, '330822', 1976, 1975, '常山县', 987, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (991, '330824', 1978, 1977, '开化县', 987, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (992, '330825', 1980, 1979, '龙游县', 987, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (993, '330881', 1982, 1981, '江山市', 987, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (994, '330900', 1993, 1984, '舟山市', 918, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (995, '330902', 1986, 1985, '定海区', 994, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (996, '330903', 1988, 1987, '普陀区', 994, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (997, '330921', 1990, 1989, '岱山县', 994, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (998, '330922', 1992, 1991, '嵊泗县', 994, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (999, '331000', 2013, 1994, '台州市', 918, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1000, '331002', 1996, 1995, '椒江区', 999, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1001, '331003', 1998, 1997, '黄岩区', 999, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1002, '331004', 2000, 1999, '路桥区', 999, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1003, '331022', 2002, 2001, '三门县', 999, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1004, '331023', 2004, 2003, '天台县', 999, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1005, '331024', 2006, 2005, '仙居县', 999, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1006, '331081', 2008, 2007, '温岭市', 999, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1007, '331082', 2010, 2009, '临海市', 999, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1008, '331083', 2012, 2011, '玉环市', 999, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1009, '331100', 2033, 2014, '丽水市', 918, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1010, '331102', 2016, 2015, '莲都区', 1009, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1011, '331121', 2018, 2017, '青田县', 1009, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1012, '331122', 2020, 2019, '缙云县', 1009, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1013, '331123', 2022, 2021, '遂昌县', 1009, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1014, '331124', 2024, 2023, '松阳县', 1009, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1015, '331125', 2026, 2025, '云和县', 1009, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1016, '331126', 2028, 2027, '庆元县', 1009, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1017, '331127', 2030, 2029, '景宁畲族自治县', 1009, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1018, '331181', 2032, 2031, '龙泉市', 1009, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1019, '340000', 2278, 2035, '安徽省', 918, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1020, '340100', 2055, 2036, '合肥市', 1019, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1021, '340102', 2038, 2037, '瑶海区', 1020, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1022, '340103', 2040, 2039, '庐阳区', 1020, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1023, '340104', 2042, 2041, '蜀山区', 1020, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1024, '340111', 2044, 2043, '包河区', 1020, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1025, '340121', 2046, 2045, '长丰县', 1020, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1026, '340122', 2048, 2047, '肥东县', 1020, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1027, '340123', 2050, 2049, '肥西县', 1020, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1028, '340124', 2052, 2051, '庐江县', 1020, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1029, '340181', 2054, 2053, '巢湖市', 1020, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1030, '340200', 2073, 2056, '芜湖市', 1019, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1031, '340202', 2058, 2057, '镜湖区', 1030, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1032, '340203', 2060, 2059, '弋江区', 1030, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1033, '340207', 2062, 2061, '鸠江区', 1030, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1034, '340208', 2064, 2063, '三山区', 1030, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1035, '340221', 2066, 2065, '芜湖县', 1030, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1036, '340222', 2068, 2067, '繁昌县', 1030, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1037, '340223', 2070, 2069, '南陵县', 1030, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1038, '340225', 2072, 2071, '无为县', 1030, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1039, '340300', 2089, 2074, '蚌埠市', 1019, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1040, '340302', 2076, 2075, '龙子湖区', 1039, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1041, '340303', 2078, 2077, '蚌山区', 1039, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1042, '340304', 2080, 2079, '禹会区', 1039, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1043, '340311', 2082, 2081, '淮上区', 1039, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1044, '340321', 2084, 2083, '怀远县', 1039, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1045, '340322', 2086, 2085, '五河县', 1039, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1046, '340323', 2088, 2087, '固镇县', 1039, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1047, '340400', 2105, 2090, '淮南市', 1019, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1048, '340402', 2092, 2091, '大通区', 1047, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1049, '340403', 2094, 2093, '田家庵区', 1047, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1050, '340404', 2096, 2095, '谢家集区', 1047, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1051, '340405', 2098, 2097, '八公山区', 1047, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1052, '340406', 2100, 2099, '潘集区', 1047, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1053, '340421', 2102, 2101, '凤台县', 1047, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1054, '340422', 2104, 2103, '寿县', 1047, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1055, '340500', 2119, 2106, '马鞍山市', 1019, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1056, '340503', 2108, 2107, '花山区', 1055, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1057, '340504', 2110, 2109, '雨山区', 1055, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1058, '340506', 2112, 2111, '博望区', 1055, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1059, '340521', 2114, 2113, '当涂县', 1055, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1060, '340522', 2116, 2115, '含山县', 1055, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1061, '340523', 2118, 2117, '和县', 1055, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1062, '340600', 2129, 2120, '淮北市', 1019, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1063, '340602', 2122, 2121, '杜集区', 1062, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1064, '340603', 2124, 2123, '相山区', 1062, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1065, '340604', 2126, 2125, '烈山区', 1062, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1066, '340621', 2128, 2127, '濉溪县', 1062, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1067, '340700', 2139, 2130, '铜陵市', 1019, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1068, '340705', 2132, 2131, '铜官区', 1067, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1069, '340706', 2134, 2133, '义安区', 1067, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1070, '340711', 2136, 2135, '郊区', 1067, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1071, '340722', 2138, 2137, '枞阳县', 1067, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1072, '340800', 2161, 2140, '安庆市', 1019, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1073, '340802', 2142, 2141, '迎江区', 1072, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1074, '340803', 2144, 2143, '大观区', 1072, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1075, '340811', 2146, 2145, '宜秀区', 1072, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1076, '340822', 2148, 2147, '怀宁县', 1072, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1077, '340825', 2150, 2149, '太湖县', 1072, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1078, '340826', 2152, 2151, '宿松县', 1072, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1079, '340827', 2154, 2153, '望江县', 1072, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1080, '340828', 2156, 2155, '岳西县', 1072, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1081, '340881', 2158, 2157, '桐城市', 1072, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1082, '340882', 2160, 2159, '潜山市', 1072, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1083, '341000', 2177, 2162, '黄山市', 1019, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1084, '341002', 2164, 2163, '屯溪区', 1083, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1085, '341003', 2166, 2165, '黄山区', 1083, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1086, '341004', 2168, 2167, '徽州区', 1083, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1087, '341021', 2170, 2169, '歙县', 1083, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1088, '341022', 2172, 2171, '休宁县', 1083, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1089, '341023', 2174, 2173, '黟县', 1083, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1090, '341024', 2176, 2175, '祁门县', 1083, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1091, '341100', 2195, 2178, '滁州市', 1019, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1092, '341102', 2180, 2179, '琅琊区', 1091, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1093, '341103', 2182, 2181, '南谯区', 1091, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1094, '341122', 2184, 2183, '来安县', 1091, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1095, '341124', 2186, 2185, '全椒县', 1091, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1096, '341125', 2188, 2187, '定远县', 1091, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1097, '341126', 2190, 2189, '凤阳县', 1091, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1098, '341181', 2192, 2191, '天长市', 1091, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1099, '341182', 2194, 2193, '明光市', 1091, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1100, '341200', 2213, 2196, '阜阳市', 1019, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1101, '341202', 2198, 2197, '颍州区', 1100, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1102, '341203', 2200, 2199, '颍东区', 1100, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1103, '341204', 2202, 2201, '颍泉区', 1100, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1104, '341221', 2204, 2203, '临泉县', 1100, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1105, '341222', 2206, 2205, '太和县', 1100, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1106, '341225', 2208, 2207, '阜南县', 1100, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1107, '341226', 2210, 2209, '颍上县', 1100, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1108, '341282', 2212, 2211, '界首市', 1100, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1109, '341300', 2225, 2214, '宿州市', 1019, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1110, '341302', 2216, 2215, '埇桥区', 1109, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1111, '341321', 2218, 2217, '砀山县', 1109, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1112, '341322', 2220, 2219, '萧县', 1109, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1113, '341323', 2222, 2221, '灵璧县', 1109, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1114, '341324', 2224, 2223, '泗县', 1109, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1115, '341500', 2241, 2226, '六安市', 1019, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1116, '341502', 2228, 2227, '金安区', 1115, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1117, '341503', 2230, 2229, '裕安区', 1115, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1118, '341504', 2232, 2231, '叶集区', 1115, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1119, '341522', 2234, 2233, '霍邱县', 1115, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1120, '341523', 2236, 2235, '舒城县', 1115, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1121, '341524', 2238, 2237, '金寨县', 1115, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1122, '341525', 2240, 2239, '霍山县', 1115, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1123, '341600', 2251, 2242, '亳州市', 1019, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1124, '341602', 2244, 2243, '谯城区', 1123, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1125, '341621', 2246, 2245, '涡阳县', 1123, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1126, '341622', 2248, 2247, '蒙城县', 1123, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1127, '341623', 2250, 2249, '利辛县', 1123, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1128, '341700', 2261, 2252, '池州市', 1019, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1129, '341702', 2254, 2253, '贵池区', 1128, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1130, '341721', 2256, 2255, '东至县', 1128, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1131, '341722', 2258, 2257, '石台县', 1128, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1132, '341723', 2260, 2259, '青阳县', 1128, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1133, '341800', 2277, 2262, '宣城市', 1019, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1134, '341802', 2264, 2263, '宣州区', 1133, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1135, '341821', 2266, 2265, '郎溪县', 1133, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1136, '341822', 2268, 2267, '广德县', 1133, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1137, '341823', 2270, 2269, '泾县', 1133, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1138, '341824', 2272, 2271, '绩溪县', 1133, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1139, '341825', 2274, 2273, '旌德县', 1133, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1140, '341881', 2276, 2275, '宁国市', 1133, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1141, '350000', 2468, 2279, '福建省', 1019, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1142, '350100', 2307, 2280, '福州市', 1141, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1143, '350102', 2282, 2281, '鼓楼区', 1142, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1144, '350103', 2284, 2283, '台江区', 1142, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1145, '350104', 2286, 2285, '仓山区', 1142, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1146, '350105', 2288, 2287, '马尾区', 1142, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1147, '350111', 2290, 2289, '晋安区', 1142, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1148, '350112', 2292, 2291, '长乐区', 1142, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1149, '350121', 2294, 2293, '闽侯县', 1142, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1150, '350122', 2296, 2295, '连江县', 1142, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1151, '350123', 2298, 2297, '罗源县', 1142, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1152, '350124', 2300, 2299, '闽清县', 1142, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1153, '350125', 2302, 2301, '永泰县', 1142, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1154, '350128', 2304, 2303, '平潭县', 1142, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1155, '350181', 2306, 2305, '福清市', 1142, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1156, '350200', 2321, 2308, '厦门市', 1141, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1157, '350203', 2310, 2309, '思明区', 1156, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1158, '350205', 2312, 2311, '海沧区', 1156, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1159, '350206', 2314, 2313, '湖里区', 1156, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1160, '350211', 2316, 2315, '集美区', 1156, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1161, '350212', 2318, 2317, '同安区', 1156, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1162, '350213', 2320, 2319, '翔安区', 1156, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1163, '350300', 2333, 2322, '莆田市', 1141, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1164, '350302', 2324, 2323, '城厢区', 1163, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1165, '350303', 2326, 2325, '涵江区', 1163, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1166, '350304', 2328, 2327, '荔城区', 1163, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1167, '350305', 2330, 2329, '秀屿区', 1163, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1168, '350322', 2332, 2331, '仙游县', 1163, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1169, '350400', 2359, 2334, '三明市', 1141, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1170, '350402', 2336, 2335, '梅列区', 1169, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1171, '350403', 2338, 2337, '三元区', 1169, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1172, '350421', 2340, 2339, '明溪县', 1169, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1173, '350423', 2342, 2341, '清流县', 1169, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1174, '350424', 2344, 2343, '宁化县', 1169, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1175, '350425', 2346, 2345, '大田县', 1169, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1176, '350426', 2348, 2347, '尤溪县', 1169, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1177, '350427', 2350, 2349, '沙县', 1169, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1178, '350428', 2352, 2351, '将乐县', 1169, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1179, '350429', 2354, 2353, '泰宁县', 1169, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1180, '350430', 2356, 2355, '建宁县', 1169, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1181, '350481', 2358, 2357, '永安市', 1169, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1182, '350500', 2385, 2360, '泉州市', 1141, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1183, '350502', 2362, 2361, '鲤城区', 1182, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1184, '350503', 2364, 2363, '丰泽区', 1182, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1185, '350504', 2366, 2365, '洛江区', 1182, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1186, '350505', 2368, 2367, '泉港区', 1182, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1187, '350521', 2370, 2369, '惠安县', 1182, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1188, '350524', 2372, 2371, '安溪县', 1182, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1189, '350525', 2374, 2373, '永春县', 1182, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1190, '350526', 2376, 2375, '德化县', 1182, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1191, '350527', 2378, 2377, '金门县', 1182, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1192, '350581', 2380, 2379, '石狮市', 1182, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1193, '350582', 2382, 2381, '晋江市', 1182, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1194, '350583', 2384, 2383, '南安市', 1182, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1195, '350600', 2409, 2386, '漳州市', 1141, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1196, '350602', 2388, 2387, '芗城区', 1195, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1197, '350603', 2390, 2389, '龙文区', 1195, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1198, '350622', 2392, 2391, '云霄县', 1195, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1199, '350623', 2394, 2393, '漳浦县', 1195, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1200, '350624', 2396, 2395, '诏安县', 1195, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1201, '350625', 2398, 2397, '长泰县', 1195, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1202, '350626', 2400, 2399, '东山县', 1195, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1203, '350627', 2402, 2401, '南靖县', 1195, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1204, '350628', 2404, 2403, '平和县', 1195, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1205, '350629', 2406, 2405, '华安县', 1195, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1206, '350681', 2408, 2407, '龙海市', 1195, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1207, '350700', 2431, 2410, '南平市', 1141, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1208, '350702', 2412, 2411, '延平区', 1207, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1209, '350703', 2414, 2413, '建阳区', 1207, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1210, '350721', 2416, 2415, '顺昌县', 1207, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1211, '350722', 2418, 2417, '浦城县', 1207, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1212, '350723', 2420, 2419, '光泽县', 1207, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1213, '350724', 2422, 2421, '松溪县', 1207, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1214, '350725', 2424, 2423, '政和县', 1207, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1215, '350781', 2426, 2425, '邵武市', 1207, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1216, '350782', 2428, 2427, '武夷山市', 1207, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1217, '350783', 2430, 2429, '建瓯市', 1207, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1218, '350800', 2447, 2432, '龙岩市', 1141, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1219, '350802', 2434, 2433, '新罗区', 1218, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1220, '350803', 2436, 2435, '永定区', 1218, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1221, '350821', 2438, 2437, '长汀县', 1218, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1222, '350823', 2440, 2439, '上杭县', 1218, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1223, '350824', 2442, 2441, '武平县', 1218, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1224, '350825', 2444, 2443, '连城县', 1218, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1225, '350881', 2446, 2445, '漳平市', 1218, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1226, '350900', 2467, 2448, '宁德市', 1141, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1227, '350902', 2450, 2449, '蕉城区', 1226, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1228, '350921', 2452, 2451, '霞浦县', 1226, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1229, '350922', 2454, 2453, '古田县', 1226, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1230, '350923', 2456, 2455, '屏南县', 1226, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1231, '350924', 2458, 2457, '寿宁县', 1226, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1232, '350925', 2460, 2459, '周宁县', 1226, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1233, '350926', 2462, 2461, '柘荣县', 1226, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1234, '350981', 2464, 2463, '福安市', 1226, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1235, '350982', 2466, 2465, '福鼎市', 1226, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1236, '360000', 2692, 2469, '江西省', 1141, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1237, '360100', 2489, 2470, '南昌市', 1236, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1238, '360102', 2472, 2471, '东湖区', 1237, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1239, '360103', 2474, 2473, '西湖区', 1237, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1240, '360104', 2476, 2475, '青云谱区', 1237, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1241, '360105', 2478, 2477, '湾里区', 1237, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1242, '360111', 2480, 2479, '青山湖区', 1237, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1243, '360112', 2482, 2481, '新建区', 1237, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1244, '360121', 2484, 2483, '南昌县', 1237, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1245, '360123', 2486, 2485, '安义县', 1237, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1246, '360124', 2488, 2487, '进贤县', 1237, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1247, '360200', 2499, 2490, '景德镇市', 1236, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1248, '360202', 2492, 2491, '昌江区', 1247, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1249, '360203', 2494, 2493, '珠山区', 1247, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1250, '360222', 2496, 2495, '浮梁县', 1247, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1251, '360281', 2498, 2497, '乐平市', 1247, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1252, '360300', 2511, 2500, '萍乡市', 1236, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1253, '360302', 2502, 2501, '安源区', 1252, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1254, '360313', 2504, 2503, '湘东区', 1252, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1255, '360321', 2506, 2505, '莲花县', 1252, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1256, '360322', 2508, 2507, '上栗县', 1252, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1257, '360323', 2510, 2509, '芦溪县', 1252, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1258, '360400', 2539, 2512, '九江市', 1236, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1259, '360402', 2514, 2513, '濂溪区', 1258, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1260, '360403', 2516, 2515, '浔阳区', 1258, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1261, '360404', 2518, 2517, '柴桑区', 1258, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1262, '360423', 2520, 2519, '武宁县', 1258, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1263, '360424', 2522, 2521, '修水县', 1258, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1264, '360425', 2524, 2523, '永修县', 1258, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1265, '360426', 2526, 2525, '德安县', 1258, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1266, '360428', 2528, 2527, '都昌县', 1258, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1267, '360429', 2530, 2529, '湖口县', 1258, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1268, '360430', 2532, 2531, '彭泽县', 1258, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1269, '360481', 2534, 2533, '瑞昌市', 1258, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1270, '360482', 2536, 2535, '共青城市', 1258, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1271, '360483', 2538, 2537, '庐山市', 1258, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1272, '360500', 2545, 2540, '新余市', 1236, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1273, '360502', 2542, 2541, '渝水区', 1272, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1274, '360521', 2544, 2543, '分宜县', 1272, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1275, '360600', 2553, 2546, '鹰潭市', 1236, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1276, '360602', 2548, 2547, '月湖区', 1275, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1277, '360603', 2550, 2549, '余江区', 1275, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1278, '360681', 2552, 2551, '贵溪市', 1275, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1279, '360700', 2591, 2554, '赣州市', 1236, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1280, '360702', 2556, 2555, '章贡区', 1279, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1281, '360703', 2558, 2557, '南康区', 1279, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1282, '360704', 2560, 2559, '赣县区', 1279, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1283, '360722', 2562, 2561, '信丰县', 1279, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1284, '360723', 2564, 2563, '大余县', 1279, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1285, '360724', 2566, 2565, '上犹县', 1279, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1286, '360725', 2568, 2567, '崇义县', 1279, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1287, '360726', 2570, 2569, '安远县', 1279, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1288, '360727', 2572, 2571, '龙南县', 1279, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1289, '360728', 2574, 2573, '定南县', 1279, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1290, '360729', 2576, 2575, '全南县', 1279, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1291, '360730', 2578, 2577, '宁都县', 1279, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1292, '360731', 2580, 2579, '于都县', 1279, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1293, '360732', 2582, 2581, '兴国县', 1279, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1294, '360733', 2584, 2583, '会昌县', 1279, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1295, '360734', 2586, 2585, '寻乌县', 1279, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1296, '360735', 2588, 2587, '石城县', 1279, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1297, '360781', 2590, 2589, '瑞金市', 1279, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1298, '360800', 2619, 2592, '吉安市', 1236, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1299, '360802', 2594, 2593, '吉州区', 1298, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1300, '360803', 2596, 2595, '青原区', 1298, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1301, '360821', 2598, 2597, '吉安县', 1298, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1302, '360822', 2600, 2599, '吉水县', 1298, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1303, '360823', 2602, 2601, '峡江县', 1298, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1304, '360824', 2604, 2603, '新干县', 1298, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1305, '360825', 2606, 2605, '永丰县', 1298, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1306, '360826', 2608, 2607, '泰和县', 1298, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1307, '360827', 2610, 2609, '遂川县', 1298, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1308, '360828', 2612, 2611, '万安县', 1298, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1309, '360829', 2614, 2613, '安福县', 1298, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1310, '360830', 2616, 2615, '永新县', 1298, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1311, '360881', 2618, 2617, '井冈山市', 1298, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1312, '360900', 2641, 2620, '宜春市', 1236, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1313, '360902', 2622, 2621, '袁州区', 1312, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1314, '360921', 2624, 2623, '奉新县', 1312, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1315, '360922', 2626, 2625, '万载县', 1312, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1316, '360923', 2628, 2627, '上高县', 1312, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1317, '360924', 2630, 2629, '宜丰县', 1312, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1318, '360925', 2632, 2631, '靖安县', 1312, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1319, '360926', 2634, 2633, '铜鼓县', 1312, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1320, '360981', 2636, 2635, '丰城市', 1312, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1321, '360982', 2638, 2637, '樟树市', 1312, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1322, '360983', 2640, 2639, '高安市', 1312, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1323, '361000', 2665, 2642, '抚州市', 1236, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1324, '361002', 2644, 2643, '临川区', 1323, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1325, '361003', 2646, 2645, '东乡区', 1323, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1326, '361021', 2648, 2647, '南城县', 1323, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1327, '361022', 2650, 2649, '黎川县', 1323, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1328, '361023', 2652, 2651, '南丰县', 1323, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1329, '361024', 2654, 2653, '崇仁县', 1323, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1330, '361025', 2656, 2655, '乐安县', 1323, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1331, '361026', 2658, 2657, '宜黄县', 1323, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1332, '361027', 2660, 2659, '金溪县', 1323, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1333, '361028', 2662, 2661, '资溪县', 1323, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1334, '361030', 2664, 2663, '广昌县', 1323, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1335, '361100', 2691, 2666, '上饶市', 1236, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1336, '361102', 2668, 2667, '信州区', 1335, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1337, '361103', 2670, 2669, '广丰区', 1335, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1338, '361121', 2672, 2671, '上饶县', 1335, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1339, '361123', 2674, 2673, '玉山县', 1335, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1340, '361124', 2676, 2675, '铅山县', 1335, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1341, '361125', 2678, 2677, '横峰县', 1335, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1342, '361126', 2680, 2679, '弋阳县', 1335, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1343, '361127', 2682, 2681, '余干县', 1335, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1344, '361128', 2684, 2683, '鄱阳县', 1335, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1345, '361129', 2686, 2685, '万年县', 1335, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1346, '361130', 2688, 2687, '婺源县', 1335, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1347, '361181', 2690, 2689, '德兴市', 1335, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1348, '370000', 3002, 2693, '山东省', 1236, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1349, '370100', 2715, 2694, '济南市', 1348, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1350, '370102', 2696, 2695, '历下区', 1349, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1351, '370103', 2698, 2697, '市中区', 1349, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1352, '370104', 2700, 2699, '槐荫区', 1349, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1353, '370105', 2702, 2701, '天桥区', 1349, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1354, '370112', 2704, 2703, '历城区', 1349, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1355, '370113', 2706, 2705, '长清区', 1349, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1356, '370114', 2708, 2707, '章丘区', 1349, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1357, '370115', 2710, 2709, '济阳区', 1349, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1358, '370124', 2712, 2711, '平阴县', 1349, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1359, '370126', 2714, 2713, '商河县', 1349, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1360, '370200', 2737, 2716, '青岛市', 1348, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1361, '370202', 2718, 2717, '市南区', 1360, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1362, '370203', 2720, 2719, '市北区', 1360, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1363, '370211', 2722, 2721, '黄岛区', 1360, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1364, '370212', 2724, 2723, '崂山区', 1360, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1365, '370213', 2726, 2725, '李沧区', 1360, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1366, '370214', 2728, 2727, '城阳区', 1360, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1367, '370215', 2730, 2729, '即墨区', 1360, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1368, '370281', 2732, 2731, '胶州市', 1360, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1369, '370283', 2734, 2733, '平度市', 1360, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1370, '370285', 2736, 2735, '莱西市', 1360, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1371, '370300', 2755, 2738, '淄博市', 1348, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1372, '370302', 2740, 2739, '淄川区', 1371, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1373, '370303', 2742, 2741, '张店区', 1371, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1374, '370304', 2744, 2743, '博山区', 1371, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1375, '370305', 2746, 2745, '临淄区', 1371, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1376, '370306', 2748, 2747, '周村区', 1371, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1377, '370321', 2750, 2749, '桓台县', 1371, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1378, '370322', 2752, 2751, '高青县', 1371, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1379, '370323', 2754, 2753, '沂源县', 1371, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1380, '370400', 2769, 2756, '枣庄市', 1348, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1381, '370402', 2758, 2757, '市中区', 1380, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1382, '370403', 2760, 2759, '薛城区', 1380, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1383, '370404', 2762, 2761, '峄城区', 1380, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1384, '370405', 2764, 2763, '台儿庄区', 1380, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1385, '370406', 2766, 2765, '山亭区', 1380, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1386, '370481', 2768, 2767, '滕州市', 1380, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1387, '370500', 2781, 2770, '东营市', 1348, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1388, '370502', 2772, 2771, '东营区', 1387, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1389, '370503', 2774, 2773, '河口区', 1387, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1390, '370505', 2776, 2775, '垦利区', 1387, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1391, '370522', 2778, 2777, '利津县', 1387, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1392, '370523', 2780, 2779, '广饶县', 1387, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1393, '370600', 2807, 2782, '烟台市', 1348, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1394, '370602', 2784, 2783, '芝罘区', 1393, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1395, '370611', 2786, 2785, '福山区', 1393, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1396, '370612', 2788, 2787, '牟平区', 1393, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1397, '370613', 2790, 2789, '莱山区', 1393, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1398, '370634', 2792, 2791, '长岛县', 1393, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1399, '370681', 2794, 2793, '龙口市', 1393, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1400, '370682', 2796, 2795, '莱阳市', 1393, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1401, '370683', 2798, 2797, '莱州市', 1393, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1402, '370684', 2800, 2799, '蓬莱市', 1393, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1403, '370685', 2802, 2801, '招远市', 1393, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1404, '370686', 2804, 2803, '栖霞市', 1393, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1405, '370687', 2806, 2805, '海阳市', 1393, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1406, '370700', 2833, 2808, '潍坊市', 1348, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1407, '370702', 2810, 2809, '潍城区', 1406, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1408, '370703', 2812, 2811, '寒亭区', 1406, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1409, '370704', 2814, 2813, '坊子区', 1406, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1410, '370705', 2816, 2815, '奎文区', 1406, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1411, '370724', 2818, 2817, '临朐县', 1406, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1412, '370725', 2820, 2819, '昌乐县', 1406, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1413, '370781', 2822, 2821, '青州市', 1406, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1414, '370782', 2824, 2823, '诸城市', 1406, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1415, '370783', 2826, 2825, '寿光市', 1406, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1416, '370784', 2828, 2827, '安丘市', 1406, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1417, '370785', 2830, 2829, '高密市', 1406, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1418, '370786', 2832, 2831, '昌邑市', 1406, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1419, '370800', 2857, 2834, '济宁市', 1348, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1420, '370811', 2836, 2835, '任城区', 1419, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1421, '370812', 2838, 2837, '兖州区', 1419, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1422, '370826', 2840, 2839, '微山县', 1419, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1423, '370827', 2842, 2841, '鱼台县', 1419, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1424, '370828', 2844, 2843, '金乡县', 1419, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1425, '370829', 2846, 2845, '嘉祥县', 1419, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1426, '370830', 2848, 2847, '汶上县', 1419, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1427, '370831', 2850, 2849, '泗水县', 1419, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1428, '370832', 2852, 2851, '梁山县', 1419, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1429, '370881', 2854, 2853, '曲阜市', 1419, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1430, '370883', 2856, 2855, '邹城市', 1419, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1431, '370900', 2871, 2858, '泰安市', 1348, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1432, '370902', 2860, 2859, '泰山区', 1431, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1433, '370911', 2862, 2861, '岱岳区', 1431, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1434, '370921', 2864, 2863, '宁阳县', 1431, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1435, '370923', 2866, 2865, '东平县', 1431, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1436, '370982', 2868, 2867, '新泰市', 1431, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1437, '370983', 2870, 2869, '肥城市', 1431, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1438, '371000', 2881, 2872, '威海市', 1348, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1439, '371002', 2874, 2873, '环翠区', 1438, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1440, '371003', 2876, 2875, '文登区', 1438, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1441, '371082', 2878, 2877, '荣成市', 1438, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1442, '371083', 2880, 2879, '乳山市', 1438, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1443, '371100', 2891, 2882, '日照市', 1348, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1444, '371102', 2884, 2883, '东港区', 1443, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1445, '371103', 2886, 2885, '岚山区', 1443, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1446, '371121', 2888, 2887, '五莲县', 1443, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1447, '371122', 2890, 2889, '莒县', 1443, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1448, '371200', 2897, 2892, '莱芜市', 1348, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1449, '371202', 2894, 2893, '莱城区', 1448, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1450, '371203', 2896, 2895, '钢城区', 1448, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1451, '371300', 2923, 2898, '临沂市', 1348, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1452, '371302', 2900, 2899, '兰山区', 1451, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1453, '371311', 2902, 2901, '罗庄区', 1451, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1454, '371312', 2904, 2903, '河东区', 1451, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1455, '371321', 2906, 2905, '沂南县', 1451, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1456, '371322', 2908, 2907, '郯城县', 1451, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1457, '371323', 2910, 2909, '沂水县', 1451, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1458, '371324', 2912, 2911, '兰陵县', 1451, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1459, '371325', 2914, 2913, '费县', 1451, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1460, '371326', 2916, 2915, '平邑县', 1451, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1461, '371327', 2918, 2917, '莒南县', 1451, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1462, '371328', 2920, 2919, '蒙阴县', 1451, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1463, '371329', 2922, 2921, '临沭县', 1451, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1464, '371400', 2947, 2924, '德州市', 1348, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1465, '371402', 2926, 2925, '德城区', 1464, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1466, '371403', 2928, 2927, '陵城区', 1464, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1467, '371422', 2930, 2929, '宁津县', 1464, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1468, '371423', 2932, 2931, '庆云县', 1464, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1469, '371424', 2934, 2933, '临邑县', 1464, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1470, '371425', 2936, 2935, '齐河县', 1464, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1471, '371426', 2938, 2937, '平原县', 1464, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1472, '371427', 2940, 2939, '夏津县', 1464, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1473, '371428', 2942, 2941, '武城县', 1464, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1474, '371481', 2944, 2943, '乐陵市', 1464, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1475, '371482', 2946, 2945, '禹城市', 1464, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1476, '371500', 2965, 2948, '聊城市', 1348, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1477, '371502', 2950, 2949, '东昌府区', 1476, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1478, '371521', 2952, 2951, '阳谷县', 1476, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1479, '371522', 2954, 2953, '莘县', 1476, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1480, '371523', 2956, 2955, '茌平县', 1476, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1481, '371524', 2958, 2957, '东阿县', 1476, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1482, '371525', 2960, 2959, '冠县', 1476, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1483, '371526', 2962, 2961, '高唐县', 1476, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1484, '371581', 2964, 2963, '临清市', 1476, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1485, '371600', 2981, 2966, '滨州市', 1348, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1486, '371602', 2968, 2967, '滨城区', 1485, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1487, '371603', 2970, 2969, '沾化区', 1485, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1488, '371621', 2972, 2971, '惠民县', 1485, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1489, '371622', 2974, 2973, '阳信县', 1485, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1490, '371623', 2976, 2975, '无棣县', 1485, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1491, '371625', 2978, 2977, '博兴县', 1485, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1492, '371681', 2980, 2979, '邹平市', 1485, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1493, '371700', 3001, 2982, '菏泽市', 1348, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1494, '371702', 2984, 2983, '牡丹区', 1493, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1495, '371703', 2986, 2985, '定陶区', 1493, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1496, '371721', 2988, 2987, '曹县', 1493, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1497, '371722', 2990, 2989, '单县', 1493, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1498, '371723', 2992, 2991, '成武县', 1493, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1499, '371724', 2994, 2993, '巨野县', 1493, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1500, '371725', 2996, 2995, '郓城县', 1493, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1501, '371726', 2998, 2997, '鄄城县', 1493, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1502, '371728', 3000, 2999, '东明县', 1493, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1503, '410000', 3354, 3003, '河南省', 1348, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1504, '410100', 3029, 3004, '郑州市', 1503, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1505, '410102', 3006, 3005, '中原区', 1504, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1506, '410103', 3008, 3007, '二七区', 1504, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1507, '410104', 3010, 3009, '管城回族区', 1504, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1508, '410105', 3012, 3011, '金水区', 1504, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1509, '410106', 3014, 3013, '上街区', 1504, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1510, '410108', 3016, 3015, '惠济区', 1504, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1511, '410122', 3018, 3017, '中牟县', 1504, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1512, '410181', 3020, 3019, '巩义市', 1504, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1513, '410182', 3022, 3021, '荥阳市', 1504, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1514, '410183', 3024, 3023, '新密市', 1504, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1515, '410184', 3026, 3025, '新郑市', 1504, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1516, '410185', 3028, 3027, '登封市', 1504, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1517, '410200', 3049, 3030, '开封市', 1503, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1518, '410202', 3032, 3031, '龙亭区', 1517, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1519, '410203', 3034, 3033, '顺河回族区', 1517, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1520, '410204', 3036, 3035, '鼓楼区', 1517, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1521, '410205', 3038, 3037, '禹王台区', 1517, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1522, '410212', 3040, 3039, '祥符区', 1517, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1523, '410221', 3042, 3041, '杞县', 1517, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1524, '410222', 3044, 3043, '通许县', 1517, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1525, '410223', 3046, 3045, '尉氏县', 1517, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1526, '410225', 3048, 3047, '兰考县', 1517, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1527, '410300', 3081, 3050, '洛阳市', 1503, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1528, '410302', 3052, 3051, '老城区', 1527, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1529, '410303', 3054, 3053, '西工区', 1527, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1530, '410304', 3056, 3055, '瀍河回族区', 1527, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1531, '410305', 3058, 3057, '涧西区', 1527, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1532, '410306', 3060, 3059, '吉利区', 1527, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1533, '410311', 3062, 3061, '洛龙区', 1527, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1534, '410322', 3064, 3063, '孟津县', 1527, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1535, '410323', 3066, 3065, '新安县', 1527, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1536, '410324', 3068, 3067, '栾川县', 1527, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1537, '410325', 3070, 3069, '嵩县', 1527, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1538, '410326', 3072, 3071, '汝阳县', 1527, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1539, '410327', 3074, 3073, '宜阳县', 1527, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1540, '410328', 3076, 3075, '洛宁县', 1527, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1541, '410329', 3078, 3077, '伊川县', 1527, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1542, '410381', 3080, 3079, '偃师市', 1527, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1543, '410400', 3103, 3082, '平顶山市', 1503, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1544, '410402', 3084, 3083, '新华区', 1543, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1545, '410403', 3086, 3085, '卫东区', 1543, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1546, '410404', 3088, 3087, '石龙区', 1543, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1547, '410411', 3090, 3089, '湛河区', 1543, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1548, '410421', 3092, 3091, '宝丰县', 1543, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1549, '410422', 3094, 3093, '叶县', 1543, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1550, '410423', 3096, 3095, '鲁山县', 1543, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1551, '410425', 3098, 3097, '郏县', 1543, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1552, '410481', 3100, 3099, '舞钢市', 1543, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1553, '410482', 3102, 3101, '汝州市', 1543, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1554, '410500', 3123, 3104, '安阳市', 1503, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1555, '410502', 3106, 3105, '文峰区', 1554, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1556, '410503', 3108, 3107, '北关区', 1554, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1557, '410505', 3110, 3109, '殷都区', 1554, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1558, '410506', 3112, 3111, '龙安区', 1554, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1559, '410522', 3114, 3113, '安阳县', 1554, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1560, '410523', 3116, 3115, '汤阴县', 1554, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1561, '410526', 3118, 3117, '滑县', 1554, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1562, '410527', 3120, 3119, '内黄县', 1554, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1563, '410581', 3122, 3121, '林州市', 1554, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1564, '410600', 3135, 3124, '鹤壁市', 1503, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1565, '410602', 3126, 3125, '鹤山区', 1564, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1566, '410603', 3128, 3127, '山城区', 1564, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1567, '410611', 3130, 3129, '淇滨区', 1564, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1568, '410621', 3132, 3131, '浚县', 1564, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1569, '410622', 3134, 3133, '淇县', 1564, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1570, '410700', 3161, 3136, '新乡市', 1503, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1571, '410702', 3138, 3137, '红旗区', 1570, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1572, '410703', 3140, 3139, '卫滨区', 1570, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1573, '410704', 3142, 3141, '凤泉区', 1570, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1574, '410711', 3144, 3143, '牧野区', 1570, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1575, '410721', 3146, 3145, '新乡县', 1570, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1576, '410724', 3148, 3147, '获嘉县', 1570, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1577, '410725', 3150, 3149, '原阳县', 1570, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1578, '410726', 3152, 3151, '延津县', 1570, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1579, '410727', 3154, 3153, '封丘县', 1570, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1580, '410728', 3156, 3155, '长垣县', 1570, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1581, '410781', 3158, 3157, '卫辉市', 1570, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1582, '410782', 3160, 3159, '辉县市', 1570, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1583, '410800', 3183, 3162, '焦作市', 1503, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1584, '410802', 3164, 3163, '解放区', 1583, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1585, '410803', 3166, 3165, '中站区', 1583, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1586, '410804', 3168, 3167, '马村区', 1583, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1587, '410811', 3170, 3169, '山阳区', 1583, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1588, '410821', 3172, 3171, '修武县', 1583, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1589, '410822', 3174, 3173, '博爱县', 1583, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1590, '410823', 3176, 3175, '武陟县', 1583, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1591, '410825', 3178, 3177, '温县', 1583, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1592, '410882', 3180, 3179, '沁阳市', 1583, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1593, '410883', 3182, 3181, '孟州市', 1583, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1594, '410900', 3197, 3184, '濮阳市', 1503, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1595, '410902', 3186, 3185, '华龙区', 1594, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1596, '410922', 3188, 3187, '清丰县', 1594, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1597, '410923', 3190, 3189, '南乐县', 1594, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1598, '410926', 3192, 3191, '范县', 1594, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1599, '410927', 3194, 3193, '台前县', 1594, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1600, '410928', 3196, 3195, '濮阳县', 1594, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1601, '411000', 3211, 3198, '许昌市', 1503, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1602, '411002', 3200, 3199, '魏都区', 1601, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1603, '411003', 3202, 3201, '建安区', 1601, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1604, '411024', 3204, 3203, '鄢陵县', 1601, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1605, '411025', 3206, 3205, '襄城县', 1601, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1606, '411081', 3208, 3207, '禹州市', 1601, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1607, '411082', 3210, 3209, '长葛市', 1601, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1608, '411100', 3223, 3212, '漯河市', 1503, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1609, '411102', 3214, 3213, '源汇区', 1608, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1610, '411103', 3216, 3215, '郾城区', 1608, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1611, '411104', 3218, 3217, '召陵区', 1608, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1612, '411121', 3220, 3219, '舞阳县', 1608, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1613, '411122', 3222, 3221, '临颍县', 1608, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1614, '411200', 3237, 3224, '三门峡市', 1503, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1615, '411202', 3226, 3225, '湖滨区', 1614, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1616, '411203', 3228, 3227, '陕州区', 1614, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1617, '411221', 3230, 3229, '渑池县', 1614, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1618, '411224', 3232, 3231, '卢氏县', 1614, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1619, '411281', 3234, 3233, '义马市', 1614, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1620, '411282', 3236, 3235, '灵宝市', 1614, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1621, '411300', 3265, 3238, '南阳市', 1503, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1622, '411302', 3240, 3239, '宛城区', 1621, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1623, '411303', 3242, 3241, '卧龙区', 1621, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1624, '411321', 3244, 3243, '南召县', 1621, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1625, '411322', 3246, 3245, '方城县', 1621, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1626, '411323', 3248, 3247, '西峡县', 1621, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1627, '411324', 3250, 3249, '镇平县', 1621, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1628, '411325', 3252, 3251, '内乡县', 1621, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1629, '411326', 3254, 3253, '淅川县', 1621, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1630, '411327', 3256, 3255, '社旗县', 1621, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1631, '411328', 3258, 3257, '唐河县', 1621, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1632, '411329', 3260, 3259, '新野县', 1621, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1633, '411330', 3262, 3261, '桐柏县', 1621, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1634, '411381', 3264, 3263, '邓州市', 1621, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1635, '411400', 3285, 3266, '商丘市', 1503, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1636, '411402', 3268, 3267, '梁园区', 1635, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1637, '411403', 3270, 3269, '睢阳区', 1635, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1638, '411421', 3272, 3271, '民权县', 1635, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1639, '411422', 3274, 3273, '睢县', 1635, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1640, '411423', 3276, 3275, '宁陵县', 1635, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1641, '411424', 3278, 3277, '柘城县', 1635, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1642, '411425', 3280, 3279, '虞城县', 1635, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1643, '411426', 3282, 3281, '夏邑县', 1635, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1644, '411481', 3284, 3283, '永城市', 1635, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1645, '411500', 3307, 3286, '信阳市', 1503, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1646, '411502', 3288, 3287, '浉河区', 1645, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1647, '411503', 3290, 3289, '平桥区', 1645, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1648, '411521', 3292, 3291, '罗山县', 1645, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1649, '411522', 3294, 3293, '光山县', 1645, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1650, '411523', 3296, 3295, '新县', 1645, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1651, '411524', 3298, 3297, '商城县', 1645, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1652, '411525', 3300, 3299, '固始县', 1645, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1653, '411526', 3302, 3301, '潢川县', 1645, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1654, '411527', 3304, 3303, '淮滨县', 1645, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1655, '411528', 3306, 3305, '息县', 1645, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1656, '411600', 3329, 3308, '周口市', 1503, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1657, '411602', 3310, 3309, '川汇区', 1656, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1658, '411621', 3312, 3311, '扶沟县', 1656, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1659, '411622', 3314, 3313, '西华县', 1656, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1660, '411623', 3316, 3315, '商水县', 1656, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1661, '411624', 3318, 3317, '沈丘县', 1656, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1662, '411625', 3320, 3319, '郸城县', 1656, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1663, '411626', 3322, 3321, '淮阳县', 1656, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1664, '411627', 3324, 3323, '太康县', 1656, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1665, '411628', 3326, 3325, '鹿邑县', 1656, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1666, '411681', 3328, 3327, '项城市', 1656, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1667, '411700', 3353, 3330, '驻马店市', 1503, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1668, '411702', 3332, 3331, '驿城区', 1667, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1669, '411721', 3334, 3333, '西平县', 1667, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1670, '411722', 3336, 3335, '上蔡县', 1667, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1671, '411723', 3338, 3337, '平舆县', 1667, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1672, '411724', 3340, 3339, '正阳县', 1667, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1673, '411725', 3342, 3341, '确山县', 1667, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1674, '411726', 3344, 3343, '泌阳县', 1667, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1675, '411727', 3346, 3345, '汝南县', 1667, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1676, '411728', 3348, 3347, '遂平县', 1667, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1677, '411729', 3350, 3349, '新蔡县', 1667, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1678, '419001', 3352, 3351, '济源市', 1667, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1679, '420000', 3588, 3355, '湖北省', 1503, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1680, '420100', 3383, 3356, '武汉市', 1679, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1681, '420102', 3358, 3357, '江岸区', 1680, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1682, '420103', 3360, 3359, '江汉区', 1680, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1683, '420104', 3362, 3361, '硚口区', 1680, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1684, '420105', 3364, 3363, '汉阳区', 1680, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1685, '420106', 3366, 3365, '武昌区', 1680, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1686, '420107', 3368, 3367, '青山区', 1680, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1687, '420111', 3370, 3369, '洪山区', 1680, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1688, '420112', 3372, 3371, '东西湖区', 1680, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1689, '420113', 3374, 3373, '汉南区', 1680, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1690, '420114', 3376, 3375, '蔡甸区', 1680, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1691, '420115', 3378, 3377, '江夏区', 1680, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1692, '420116', 3380, 3379, '黄陂区', 1680, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1693, '420117', 3382, 3381, '新洲区', 1680, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1694, '420200', 3397, 3384, '黄石市', 1679, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1695, '420202', 3386, 3385, '黄石港区', 1694, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1696, '420203', 3388, 3387, '西塞山区', 1694, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1697, '420204', 3390, 3389, '下陆区', 1694, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1698, '420205', 3392, 3391, '铁山区', 1694, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1699, '420222', 3394, 3393, '阳新县', 1694, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1700, '420281', 3396, 3395, '大冶市', 1694, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1701, '420300', 3415, 3398, '十堰市', 1679, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1702, '420302', 3400, 3399, '茅箭区', 1701, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1703, '420303', 3402, 3401, '张湾区', 1701, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1704, '420304', 3404, 3403, '郧阳区', 1701, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1705, '420322', 3406, 3405, '郧西县', 1701, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1706, '420323', 3408, 3407, '竹山县', 1701, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1707, '420324', 3410, 3409, '竹溪县', 1701, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1708, '420325', 3412, 3411, '房县', 1701, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1709, '420381', 3414, 3413, '丹江口市', 1701, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1710, '420500', 3443, 3416, '宜昌市', 1679, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1711, '420502', 3418, 3417, '西陵区', 1710, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1712, '420503', 3420, 3419, '伍家岗区', 1710, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1713, '420504', 3422, 3421, '点军区', 1710, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1714, '420505', 3424, 3423, '猇亭区', 1710, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1715, '420506', 3426, 3425, '夷陵区', 1710, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1716, '420525', 3428, 3427, '远安县', 1710, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1717, '420526', 3430, 3429, '兴山县', 1710, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1718, '420527', 3432, 3431, '秭归县', 1710, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1719, '420528', 3434, 3433, '长阳土家族自治县', 1710, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1720, '420529', 3436, 3435, '五峰土家族自治县', 1710, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1721, '420581', 3438, 3437, '宜都市', 1710, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1722, '420582', 3440, 3439, '当阳市', 1710, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1723, '420583', 3442, 3441, '枝江市', 1710, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1724, '420600', 3463, 3444, '襄阳市', 1679, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1725, '420602', 3446, 3445, '襄城区', 1724, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1726, '420606', 3448, 3447, '樊城区', 1724, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1727, '420607', 3450, 3449, '襄州区', 1724, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1728, '420624', 3452, 3451, '南漳县', 1724, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1729, '420625', 3454, 3453, '谷城县', 1724, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1730, '420626', 3456, 3455, '保康县', 1724, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1731, '420682', 3458, 3457, '老河口市', 1724, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1732, '420683', 3460, 3459, '枣阳市', 1724, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1733, '420684', 3462, 3461, '宜城市', 1724, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1734, '420700', 3471, 3464, '鄂州市', 1679, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1735, '420702', 3466, 3465, '梁子湖区', 1734, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1736, '420703', 3468, 3467, '华容区', 1734, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1737, '420704', 3470, 3469, '鄂城区', 1734, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1738, '420800', 3483, 3472, '荆门市', 1679, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1739, '420802', 3474, 3473, '东宝区', 1738, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1740, '420804', 3476, 3475, '掇刀区', 1738, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1741, '420822', 3478, 3477, '沙洋县', 1738, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1742, '420881', 3480, 3479, '钟祥市', 1738, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1743, '420882', 3482, 3481, '京山市', 1738, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1744, '420900', 3499, 3484, '孝感市', 1679, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1745, '420902', 3486, 3485, '孝南区', 1744, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1746, '420921', 3488, 3487, '孝昌县', 1744, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1747, '420922', 3490, 3489, '大悟县', 1744, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1748, '420923', 3492, 3491, '云梦县', 1744, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1749, '420981', 3494, 3493, '应城市', 1744, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1750, '420982', 3496, 3495, '安陆市', 1744, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1751, '420984', 3498, 3497, '汉川市', 1744, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1752, '421000', 3517, 3500, '荆州市', 1679, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1753, '421002', 3502, 3501, '沙市区', 1752, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1754, '421003', 3504, 3503, '荆州区', 1752, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1755, '421022', 3506, 3505, '公安县', 1752, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1756, '421023', 3508, 3507, '监利县', 1752, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1757, '421024', 3510, 3509, '江陵县', 1752, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1758, '421081', 3512, 3511, '石首市', 1752, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1759, '421083', 3514, 3513, '洪湖市', 1752, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1760, '421087', 3516, 3515, '松滋市', 1752, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1761, '421100', 3539, 3518, '黄冈市', 1679, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1762, '421102', 3520, 3519, '黄州区', 1761, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1763, '421121', 3522, 3521, '团风县', 1761, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1764, '421122', 3524, 3523, '红安县', 1761, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1765, '421123', 3526, 3525, '罗田县', 1761, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1766, '421124', 3528, 3527, '英山县', 1761, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1767, '421125', 3530, 3529, '浠水县', 1761, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1768, '421126', 3532, 3531, '蕲春县', 1761, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1769, '421127', 3534, 3533, '黄梅县', 1761, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1770, '421181', 3536, 3535, '麻城市', 1761, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1771, '421182', 3538, 3537, '武穴市', 1761, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1772, '421200', 3553, 3540, '咸宁市', 1679, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1773, '421202', 3542, 3541, '咸安区', 1772, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1774, '421221', 3544, 3543, '嘉鱼县', 1772, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1775, '421222', 3546, 3545, '通城县', 1772, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1776, '421223', 3548, 3547, '崇阳县', 1772, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1777, '421224', 3550, 3549, '通山县', 1772, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1778, '421281', 3552, 3551, '赤壁市', 1772, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1779, '421300', 3561, 3554, '随州市', 1679, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1780, '421303', 3556, 3555, '曾都区', 1779, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1781, '421321', 3558, 3557, '随县', 1779, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1782, '421381', 3560, 3559, '广水市', 1779, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1783, '422800', 3587, 3562, '恩施土家族苗族自治州', 1679, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1784, '422801', 3564, 3563, '恩施市', 1783, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1785, '422802', 3566, 3565, '利川市', 1783, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1786, '422822', 3568, 3567, '建始县', 1783, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1787, '422823', 3570, 3569, '巴东县', 1783, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1788, '422825', 3572, 3571, '宣恩县', 1783, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1789, '422826', 3574, 3573, '咸丰县', 1783, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1790, '422827', 3576, 3575, '来凤县', 1783, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1791, '422828', 3578, 3577, '鹤峰县', 1783, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1792, '429004', 3580, 3579, '仙桃市', 1783, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1793, '429005', 3582, 3581, '潜江市', 1783, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1794, '429006', 3584, 3583, '天门市', 1783, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1795, '429021', 3586, 3585, '神农架林区', 1783, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1796, '430000', 3862, 3589, '湖南省', 1679, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1797, '430100', 3609, 3590, '长沙市', 1796, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1798, '430102', 3592, 3591, '芙蓉区', 1797, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1799, '430103', 3594, 3593, '天心区', 1797, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1800, '430104', 3596, 3595, '岳麓区', 1797, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1801, '430105', 3598, 3597, '开福区', 1797, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1802, '430111', 3600, 3599, '雨花区', 1797, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1803, '430112', 3602, 3601, '望城区', 1797, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1804, '430121', 3604, 3603, '长沙县', 1797, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1805, '430181', 3606, 3605, '浏阳市', 1797, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1806, '430182', 3608, 3607, '宁乡市', 1797, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1807, '430200', 3629, 3610, '株洲市', 1796, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1808, '430202', 3612, 3611, '荷塘区', 1807, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1809, '430203', 3614, 3613, '芦淞区', 1807, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1810, '430204', 3616, 3615, '石峰区', 1807, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1811, '430211', 3618, 3617, '天元区', 1807, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1812, '430212', 3620, 3619, '渌口区', 1807, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1813, '430223', 3622, 3621, '攸县', 1807, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1814, '430224', 3624, 3623, '茶陵县', 1807, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1815, '430225', 3626, 3625, '炎陵县', 1807, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1816, '430281', 3628, 3627, '醴陵市', 1807, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1817, '430300', 3641, 3630, '湘潭市', 1796, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1818, '430302', 3632, 3631, '雨湖区', 1817, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1819, '430304', 3634, 3633, '岳塘区', 1817, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1820, '430321', 3636, 3635, '湘潭县', 1817, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1821, '430381', 3638, 3637, '湘乡市', 1817, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1822, '430382', 3640, 3639, '韶山市', 1817, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1823, '430400', 3667, 3642, '衡阳市', 1796, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1824, '430405', 3644, 3643, '珠晖区', 1823, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1825, '430406', 3646, 3645, '雁峰区', 1823, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1826, '430407', 3648, 3647, '石鼓区', 1823, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1827, '430408', 3650, 3649, '蒸湘区', 1823, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1828, '430412', 3652, 3651, '南岳区', 1823, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1829, '430421', 3654, 3653, '衡阳县', 1823, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1830, '430422', 3656, 3655, '衡南县', 1823, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1831, '430423', 3658, 3657, '衡山县', 1823, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1832, '430424', 3660, 3659, '衡东县', 1823, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1833, '430426', 3662, 3661, '祁东县', 1823, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1834, '430481', 3664, 3663, '耒阳市', 1823, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1835, '430482', 3666, 3665, '常宁市', 1823, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1836, '430500', 3693, 3668, '邵阳市', 1796, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1837, '430502', 3670, 3669, '双清区', 1836, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1838, '430503', 3672, 3671, '大祥区', 1836, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1839, '430511', 3674, 3673, '北塔区', 1836, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1840, '430521', 3676, 3675, '邵东县', 1836, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1841, '430522', 3678, 3677, '新邵县', 1836, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1842, '430523', 3680, 3679, '邵阳县', 1836, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1843, '430524', 3682, 3681, '隆回县', 1836, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1844, '430525', 3684, 3683, '洞口县', 1836, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1845, '430527', 3686, 3685, '绥宁县', 1836, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1846, '430528', 3688, 3687, '新宁县', 1836, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1847, '430529', 3690, 3689, '城步苗族自治县', 1836, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1848, '430581', 3692, 3691, '武冈市', 1836, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1849, '430600', 3713, 3694, '岳阳市', 1796, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1850, '430602', 3696, 3695, '岳阳楼区', 1849, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1851, '430603', 3698, 3697, '云溪区', 1849, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1852, '430611', 3700, 3699, '君山区', 1849, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1853, '430621', 3702, 3701, '岳阳县', 1849, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1854, '430623', 3704, 3703, '华容县', 1849, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1855, '430624', 3706, 3705, '湘阴县', 1849, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1856, '430626', 3708, 3707, '平江县', 1849, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1857, '430681', 3710, 3709, '汨罗市', 1849, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1858, '430682', 3712, 3711, '临湘市', 1849, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1859, '430700', 3733, 3714, '常德市', 1796, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1860, '430702', 3716, 3715, '武陵区', 1859, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1861, '430703', 3718, 3717, '鼎城区', 1859, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1862, '430721', 3720, 3719, '安乡县', 1859, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1863, '430722', 3722, 3721, '汉寿县', 1859, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1864, '430723', 3724, 3723, '澧县', 1859, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1865, '430724', 3726, 3725, '临澧县', 1859, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1866, '430725', 3728, 3727, '桃源县', 1859, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1867, '430726', 3730, 3729, '石门县', 1859, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1868, '430781', 3732, 3731, '津市市', 1859, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1869, '430800', 3743, 3734, '张家界市', 1796, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1870, '430802', 3736, 3735, '永定区', 1869, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1871, '430811', 3738, 3737, '武陵源区', 1869, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1872, '430821', 3740, 3739, '慈利县', 1869, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1873, '430822', 3742, 3741, '桑植县', 1869, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1874, '430900', 3757, 3744, '益阳市', 1796, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1875, '430902', 3746, 3745, '资阳区', 1874, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1876, '430903', 3748, 3747, '赫山区', 1874, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1877, '430921', 3750, 3749, '南县', 1874, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1878, '430922', 3752, 3751, '桃江县', 1874, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1879, '430923', 3754, 3753, '安化县', 1874, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1880, '430981', 3756, 3755, '沅江市', 1874, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1881, '431000', 3781, 3758, '郴州市', 1796, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1882, '431002', 3760, 3759, '北湖区', 1881, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1883, '431003', 3762, 3761, '苏仙区', 1881, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1884, '431021', 3764, 3763, '桂阳县', 1881, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1885, '431022', 3766, 3765, '宜章县', 1881, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1886, '431023', 3768, 3767, '永兴县', 1881, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1887, '431024', 3770, 3769, '嘉禾县', 1881, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1888, '431025', 3772, 3771, '临武县', 1881, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1889, '431026', 3774, 3773, '汝城县', 1881, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1890, '431027', 3776, 3775, '桂东县', 1881, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1891, '431028', 3778, 3777, '安仁县', 1881, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1892, '431081', 3780, 3779, '资兴市', 1881, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1893, '431100', 3805, 3782, '永州市', 1796, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1894, '431102', 3784, 3783, '零陵区', 1893, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1895, '431103', 3786, 3785, '冷水滩区', 1893, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1896, '431121', 3788, 3787, '祁阳县', 1893, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1897, '431122', 3790, 3789, '东安县', 1893, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1898, '431123', 3792, 3791, '双牌县', 1893, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1899, '431124', 3794, 3793, '道县', 1893, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1900, '431125', 3796, 3795, '江永县', 1893, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1901, '431126', 3798, 3797, '宁远县', 1893, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1902, '431127', 3800, 3799, '蓝山县', 1893, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1903, '431128', 3802, 3801, '新田县', 1893, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1904, '431129', 3804, 3803, '江华瑶族自治县', 1893, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1905, '431200', 3831, 3806, '怀化市', 1796, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1906, '431202', 3808, 3807, '鹤城区', 1905, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1907, '431221', 3810, 3809, '中方县', 1905, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1908, '431222', 3812, 3811, '沅陵县', 1905, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1909, '431223', 3814, 3813, '辰溪县', 1905, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1910, '431224', 3816, 3815, '溆浦县', 1905, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1911, '431225', 3818, 3817, '会同县', 1905, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1912, '431226', 3820, 3819, '麻阳苗族自治县', 1905, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1913, '431227', 3822, 3821, '新晃侗族自治县', 1905, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1914, '431228', 3824, 3823, '芷江侗族自治县', 1905, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1915, '431229', 3826, 3825, '靖州苗族侗族自治县', 1905, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1916, '431230', 3828, 3827, '通道侗族自治县', 1905, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1917, '431281', 3830, 3829, '洪江市', 1905, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1918, '431300', 3843, 3832, '娄底市', 1796, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1919, '431302', 3834, 3833, '娄星区', 1918, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1920, '431321', 3836, 3835, '双峰县', 1918, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1921, '431322', 3838, 3837, '新化县', 1918, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1922, '431381', 3840, 3839, '冷水江市', 1918, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1923, '431382', 3842, 3841, '涟源市', 1918, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1924, '433100', 3861, 3844, '湘西土家族苗族自治州', 1796, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1925, '433101', 3846, 3845, '吉首市', 1924, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1926, '433122', 3848, 3847, '泸溪县', 1924, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1927, '433123', 3850, 3849, '凤凰县', 1924, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1928, '433124', 3852, 3851, '花垣县', 1924, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1929, '433125', 3854, 3853, '保靖县', 1924, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1930, '433126', 3856, 3855, '古丈县', 1924, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1931, '433127', 3858, 3857, '永顺县', 1924, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1932, '433130', 3860, 3859, '龙山县', 1924, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1933, '440000', 4150, 3863, '广东省', 1796, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1934, '440100', 3887, 3864, '广州市', 1933, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1935, '440103', 3866, 3865, '荔湾区', 1934, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1936, '440104', 3868, 3867, '越秀区', 1934, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1937, '440105', 3870, 3869, '海珠区', 1934, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1938, '440106', 3872, 3871, '天河区', 1934, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1939, '440111', 3874, 3873, '白云区', 1934, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1940, '440112', 3876, 3875, '黄埔区', 1934, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1941, '440113', 3878, 3877, '番禺区', 1934, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1942, '440114', 3880, 3879, '花都区', 1934, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1943, '440115', 3882, 3881, '南沙区', 1934, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1944, '440117', 3884, 3883, '从化区', 1934, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1945, '440118', 3886, 3885, '增城区', 1934, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1946, '440200', 3909, 3888, '韶关市', 1933, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1947, '440203', 3890, 3889, '武江区', 1946, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1948, '440204', 3892, 3891, '浈江区', 1946, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1949, '440205', 3894, 3893, '曲江区', 1946, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1950, '440222', 3896, 3895, '始兴县', 1946, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1951, '440224', 3898, 3897, '仁化县', 1946, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1952, '440229', 3900, 3899, '翁源县', 1946, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1953, '440232', 3902, 3901, '乳源瑶族自治县', 1946, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1954, '440233', 3904, 3903, '新丰县', 1946, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1955, '440281', 3906, 3905, '乐昌市', 1946, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1956, '440282', 3908, 3907, '南雄市', 1946, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1957, '440300', 3929, 3910, '深圳市', 1933, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1958, '440303', 3912, 3911, '罗湖区', 1957, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1959, '440304', 3914, 3913, '福田区', 1957, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1960, '440305', 3916, 3915, '南山区', 1957, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1961, '440306', 3918, 3917, '宝安区', 1957, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1962, '440307', 3920, 3919, '龙岗区', 1957, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1963, '440308', 3922, 3921, '盐田区', 1957, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1964, '440309', 3924, 3923, '龙华区', 1957, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1965, '440310', 3926, 3925, '坪山区', 1957, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1966, '440311', 3928, 3927, '光明区', 1957, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1967, '440400', 3937, 3930, '珠海市', 1933, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1968, '440402', 3932, 3931, '香洲区', 1967, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1969, '440403', 3934, 3933, '斗门区', 1967, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1970, '440404', 3936, 3935, '金湾区', 1967, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1971, '440500', 3953, 3938, '汕头市', 1933, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1972, '440507', 3940, 3939, '龙湖区', 1971, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1973, '440511', 3942, 3941, '金平区', 1971, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1974, '440512', 3944, 3943, '濠江区', 1971, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1975, '440513', 3946, 3945, '潮阳区', 1971, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1976, '440514', 3948, 3947, '潮南区', 1971, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1977, '440515', 3950, 3949, '澄海区', 1971, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1978, '440523', 3952, 3951, '南澳县', 1971, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1979, '440600', 3965, 3954, '佛山市', 1933, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1980, '440604', 3956, 3955, '禅城区', 1979, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1981, '440605', 3958, 3957, '南海区', 1979, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1982, '440606', 3960, 3959, '顺德区', 1979, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1983, '440607', 3962, 3961, '三水区', 1979, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1984, '440608', 3964, 3963, '高明区', 1979, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1985, '440700', 3981, 3966, '江门市', 1933, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1986, '440703', 3968, 3967, '蓬江区', 1985, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1987, '440704', 3970, 3969, '江海区', 1985, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1988, '440705', 3972, 3971, '新会区', 1985, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1989, '440781', 3974, 3973, '台山市', 1985, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1990, '440783', 3976, 3975, '开平市', 1985, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1991, '440784', 3978, 3977, '鹤山市', 1985, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1992, '440785', 3980, 3979, '恩平市', 1985, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1993, '440800', 4001, 3982, '湛江市', 1933, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1994, '440802', 3984, 3983, '赤坎区', 1993, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1995, '440803', 3986, 3985, '霞山区', 1993, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1996, '440804', 3988, 3987, '坡头区', 1993, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1997, '440811', 3990, 3989, '麻章区', 1993, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1998, '440823', 3992, 3991, '遂溪县', 1993, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (1999, '440825', 3994, 3993, '徐闻县', 1993, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2000, '440881', 3996, 3995, '廉江市', 1993, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2001, '440882', 3998, 3997, '雷州市', 1993, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2002, '440883', 4000, 3999, '吴川市', 1993, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2003, '440900', 4013, 4002, '茂名市', 1933, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2004, '440902', 4004, 4003, '茂南区', 2003, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2005, '440904', 4006, 4005, '电白区', 2003, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2006, '440981', 4008, 4007, '高州市', 2003, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2007, '440982', 4010, 4009, '化州市', 2003, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2008, '440983', 4012, 4011, '信宜市', 2003, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2009, '441200', 4031, 4014, '肇庆市', 1933, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2010, '441202', 4016, 4015, '端州区', 2009, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2011, '441203', 4018, 4017, '鼎湖区', 2009, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2012, '441204', 4020, 4019, '高要区', 2009, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2013, '441223', 4022, 4021, '广宁县', 2009, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2014, '441224', 4024, 4023, '怀集县', 2009, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2015, '441225', 4026, 4025, '封开县', 2009, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2016, '441226', 4028, 4027, '德庆县', 2009, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2017, '441284', 4030, 4029, '四会市', 2009, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2018, '441300', 4043, 4032, '惠州市', 1933, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2019, '441302', 4034, 4033, '惠城区', 2018, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2020, '441303', 4036, 4035, '惠阳区', 2018, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2021, '441322', 4038, 4037, '博罗县', 2018, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2022, '441323', 4040, 4039, '惠东县', 2018, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2023, '441324', 4042, 4041, '龙门县', 2018, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2024, '441400', 4061, 4044, '梅州市', 1933, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2025, '441402', 4046, 4045, '梅江区', 2024, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2026, '441403', 4048, 4047, '梅县区', 2024, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2027, '441422', 4050, 4049, '大埔县', 2024, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2028, '441423', 4052, 4051, '丰顺县', 2024, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2029, '441424', 4054, 4053, '五华县', 2024, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2030, '441426', 4056, 4055, '平远县', 2024, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2031, '441427', 4058, 4057, '蕉岭县', 2024, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2032, '441481', 4060, 4059, '兴宁市', 2024, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2033, '441500', 4071, 4062, '汕尾市', 1933, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2034, '441502', 4064, 4063, '城区', 2033, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2035, '441521', 4066, 4065, '海丰县', 2033, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2036, '441523', 4068, 4067, '陆河县', 2033, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2037, '441581', 4070, 4069, '陆丰市', 2033, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2038, '441600', 4085, 4072, '河源市', 1933, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2039, '441602', 4074, 4073, '源城区', 2038, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2040, '441621', 4076, 4075, '紫金县', 2038, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2041, '441622', 4078, 4077, '龙川县', 2038, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2042, '441623', 4080, 4079, '连平县', 2038, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2043, '441624', 4082, 4081, '和平县', 2038, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2044, '441625', 4084, 4083, '东源县', 2038, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2045, '441700', 4095, 4086, '阳江市', 1933, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2046, '441702', 4088, 4087, '江城区', 2045, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2047, '441704', 4090, 4089, '阳东区', 2045, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2048, '441721', 4092, 4091, '阳西县', 2045, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2049, '441781', 4094, 4093, '阳春市', 2045, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2050, '441800', 4113, 4096, '清远市', 1933, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2051, '441802', 4098, 4097, '清城区', 2050, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2052, '441803', 4100, 4099, '清新区', 2050, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2053, '441821', 4102, 4101, '佛冈县', 2050, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2054, '441823', 4104, 4103, '阳山县', 2050, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2055, '441825', 4106, 4105, '连山壮族瑶族自治县', 2050, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2056, '441826', 4108, 4107, '连南瑶族自治县', 2050, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2057, '441881', 4110, 4109, '英德市', 2050, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2058, '441882', 4112, 4111, '连州市', 2050, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2059, '441900', 4125, 4114, '东莞市', 1933, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2060, '441901', 4116, 4115, '东莞市', 2059, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2061, '441901', 4118, 4117, '东莞市', 2059, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2062, '445102', 4120, 4119, '湘桥区', 2059, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2063, '445103', 4122, 4121, '潮安区', 2059, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2064, '445122', 4124, 4123, '饶平县', 2059, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2065, '445200', 4137, 4126, '揭阳市', 1933, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2066, '445202', 4128, 4127, '榕城区', 2065, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2067, '445203', 4130, 4129, '揭东区', 2065, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2068, '445222', 4132, 4131, '揭西县', 2065, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2069, '445224', 4134, 4133, '惠来县', 2065, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2070, '445281', 4136, 4135, '普宁市', 2065, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2071, '445300', 4149, 4138, '云浮市', 1933, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2072, '445302', 4140, 4139, '云城区', 2071, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2073, '445303', 4142, 4141, '云安区', 2071, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2074, '445321', 4144, 4143, '新兴县', 2071, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2075, '445322', 4146, 4145, '郁南县', 2071, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2076, '445381', 4148, 4147, '罗定市', 2071, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2077, '450000', 4402, 4151, '广西壮族自治区', 1933, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2078, '450100', 4177, 4152, '南宁市', 2077, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2079, '450102', 4154, 4153, '兴宁区', 2078, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2080, '450103', 4156, 4155, '青秀区', 2078, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2081, '450105', 4158, 4157, '江南区', 2078, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2082, '450107', 4160, 4159, '西乡塘区', 2078, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2083, '450108', 4162, 4161, '良庆区', 2078, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2084, '450109', 4164, 4163, '邕宁区', 2078, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2085, '450110', 4166, 4165, '武鸣区', 2078, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2086, '450123', 4168, 4167, '隆安县', 2078, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2087, '450124', 4170, 4169, '马山县', 2078, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2088, '450125', 4172, 4171, '上林县', 2078, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2089, '450126', 4174, 4173, '宾阳县', 2078, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2090, '450127', 4176, 4175, '横县', 2078, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2091, '450200', 4199, 4178, '柳州市', 2077, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2092, '450202', 4180, 4179, '城中区', 2091, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2093, '450203', 4182, 4181, '鱼峰区', 2091, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2094, '450204', 4184, 4183, '柳南区', 2091, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2095, '450205', 4186, 4185, '柳北区', 2091, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2096, '450206', 4188, 4187, '柳江区', 2091, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2097, '450222', 4190, 4189, '柳城县', 2091, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2098, '450223', 4192, 4191, '鹿寨县', 2091, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2099, '450224', 4194, 4193, '融安县', 2091, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2100, '450225', 4196, 4195, '融水苗族自治县', 2091, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2101, '450226', 4198, 4197, '三江侗族自治县', 2091, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2102, '450300', 4235, 4200, '桂林市', 2077, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2103, '450302', 4202, 4201, '秀峰区', 2102, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2104, '450303', 4204, 4203, '叠彩区', 2102, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2105, '450304', 4206, 4205, '象山区', 2102, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2106, '450305', 4208, 4207, '七星区', 2102, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2107, '450311', 4210, 4209, '雁山区', 2102, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2108, '450312', 4212, 4211, '临桂区', 2102, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2109, '450321', 4214, 4213, '阳朔县', 2102, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2110, '450323', 4216, 4215, '灵川县', 2102, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2111, '450324', 4218, 4217, '全州县', 2102, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2112, '450325', 4220, 4219, '兴安县', 2102, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2113, '450326', 4222, 4221, '永福县', 2102, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2114, '450327', 4224, 4223, '灌阳县', 2102, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2115, '450328', 4226, 4225, '龙胜各族自治县', 2102, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2116, '450329', 4228, 4227, '资源县', 2102, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2117, '450330', 4230, 4229, '平乐县', 2102, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2118, '450381', 4232, 4231, '荔浦市', 2102, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2119, '450332', 4234, 4233, '恭城瑶族自治县', 2102, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2120, '450400', 4251, 4236, '梧州市', 2077, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2121, '450403', 4238, 4237, '万秀区', 2120, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2122, '450405', 4240, 4239, '长洲区', 2120, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2123, '450406', 4242, 4241, '龙圩区', 2120, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2124, '450421', 4244, 4243, '苍梧县', 2120, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2125, '450422', 4246, 4245, '藤县', 2120, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2126, '450423', 4248, 4247, '蒙山县', 2120, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2127, '450481', 4250, 4249, '岑溪市', 2120, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2128, '450500', 4261, 4252, '北海市', 2077, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2129, '450502', 4254, 4253, '海城区', 2128, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2130, '450503', 4256, 4255, '银海区', 2128, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2131, '450512', 4258, 4257, '铁山港区', 2128, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2132, '450521', 4260, 4259, '合浦县', 2128, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2133, '450600', 4271, 4262, '防城港市', 2077, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2134, '450602', 4264, 4263, '港口区', 2133, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2135, '450603', 4266, 4265, '防城区', 2133, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2136, '450621', 4268, 4267, '上思县', 2133, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2137, '450681', 4270, 4269, '东兴市', 2133, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2138, '450700', 4281, 4272, '钦州市', 2077, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2139, '450702', 4274, 4273, '钦南区', 2138, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2140, '450703', 4276, 4275, '钦北区', 2138, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2141, '450721', 4278, 4277, '灵山县', 2138, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2142, '450722', 4280, 4279, '浦北县', 2138, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2143, '450800', 4293, 4282, '贵港市', 2077, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2144, '450802', 4284, 4283, '港北区', 2143, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2145, '450803', 4286, 4285, '港南区', 2143, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2146, '450804', 4288, 4287, '覃塘区', 2143, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2147, '450821', 4290, 4289, '平南县', 2143, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2148, '450881', 4292, 4291, '桂平市', 2143, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2149, '450900', 4309, 4294, '玉林市', 2077, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2150, '450902', 4296, 4295, '玉州区', 2149, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2151, '450903', 4298, 4297, '福绵区', 2149, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2152, '450921', 4300, 4299, '容县', 2149, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2153, '450922', 4302, 4301, '陆川县', 2149, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2154, '450923', 4304, 4303, '博白县', 2149, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2155, '450924', 4306, 4305, '兴业县', 2149, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2156, '450981', 4308, 4307, '北流市', 2149, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2157, '451000', 4335, 4310, '百色市', 2077, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2158, '451002', 4312, 4311, '右江区', 2157, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2159, '451021', 4314, 4313, '田阳县', 2157, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2160, '451022', 4316, 4315, '田东县', 2157, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2161, '451023', 4318, 4317, '平果县', 2157, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2162, '451024', 4320, 4319, '德保县', 2157, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2163, '451026', 4322, 4321, '那坡县', 2157, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2164, '451027', 4324, 4323, '凌云县', 2157, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2165, '451028', 4326, 4325, '乐业县', 2157, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2166, '451029', 4328, 4327, '田林县', 2157, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2167, '451030', 4330, 4329, '西林县', 2157, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2168, '451031', 4332, 4331, '隆林各族自治县', 2157, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2169, '451081', 4334, 4333, '靖西市', 2157, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2170, '451100', 4347, 4336, '贺州市', 2077, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2171, '451102', 4338, 4337, '八步区', 2170, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2172, '451103', 4340, 4339, '平桂区', 2170, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2173, '451121', 4342, 4341, '昭平县', 2170, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2174, '451122', 4344, 4343, '钟山县', 2170, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2175, '451123', 4346, 4345, '富川瑶族自治县', 2170, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2176, '451200', 4371, 4348, '河池市', 2077, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2177, '451202', 4350, 4349, '金城江区', 2176, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2178, '451203', 4352, 4351, '宜州区', 2176, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2179, '451221', 4354, 4353, '南丹县', 2176, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2180, '451222', 4356, 4355, '天峨县', 2176, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2181, '451223', 4358, 4357, '凤山县', 2176, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2182, '451224', 4360, 4359, '东兰县', 2176, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2183, '451225', 4362, 4361, '罗城仫佬族自治县', 2176, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2184, '451226', 4364, 4363, '环江毛南族自治县', 2176, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2185, '451227', 4366, 4365, '巴马瑶族自治县', 2176, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2186, '451228', 4368, 4367, '都安瑶族自治县', 2176, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2187, '451229', 4370, 4369, '大化瑶族自治县', 2176, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2188, '451300', 4385, 4372, '来宾市', 2077, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2189, '451302', 4374, 4373, '兴宾区', 2188, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2190, '451321', 4376, 4375, '忻城县', 2188, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2191, '451322', 4378, 4377, '象州县', 2188, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2192, '451323', 4380, 4379, '武宣县', 2188, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2193, '451324', 4382, 4381, '金秀瑶族自治县', 2188, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2194, '451381', 4384, 4383, '合山市', 2188, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2195, '451400', 4401, 4386, '崇左市', 2077, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2196, '451402', 4388, 4387, '江州区', 2195, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2197, '451421', 4390, 4389, '扶绥县', 2195, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2198, '451422', 4392, 4391, '宁明县', 2195, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2199, '451423', 4394, 4393, '龙州县', 2195, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2200, '451424', 4396, 4395, '大新县', 2195, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2201, '451425', 4398, 4397, '天等县', 2195, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2202, '451481', 4400, 4399, '凭祥市', 2195, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2203, '460000', 4458, 4403, '海南省', 2077, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2204, '460100', 4413, 4404, '海口市', 2203, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2205, '460105', 4406, 4405, '秀英区', 2204, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2206, '460106', 4408, 4407, '龙华区', 2204, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2207, '460107', 4410, 4409, '琼山区', 2204, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2208, '460108', 4412, 4411, '美兰区', 2204, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2209, '460200', 4423, 4414, '三亚市', 2203, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2210, '460202', 4416, 4415, '海棠区', 2209, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2211, '460203', 4418, 4417, '吉阳区', 2209, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2212, '460204', 4420, 4419, '天涯区', 2209, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2213, '460205', 4422, 4421, '崖州区', 2209, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2214, '460300', 4457, 4424, '三沙市', 2203, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2215, '460301', 4426, 4425, '三沙市', 2214, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2216, '469001', 4428, 4427, '五指山市', 2214, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2217, '469002', 4430, 4429, '琼海市', 2214, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2218, '469005', 4432, 4431, '文昌市', 2214, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2219, '469006', 4434, 4433, '万宁市', 2214, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2220, '469007', 4436, 4435, '东方市', 2214, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2221, '469021', 4438, 4437, '定安县', 2214, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2222, '469022', 4440, 4439, '屯昌县', 2214, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2223, '469023', 4442, 4441, '澄迈县', 2214, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2224, '469024', 4444, 4443, '临高县', 2214, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2225, '469025', 4446, 4445, '白沙黎族自治县', 2214, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2226, '469026', 4448, 4447, '昌江黎族自治县', 2214, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2227, '469027', 4450, 4449, '乐东黎族自治县', 2214, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2228, '469028', 4452, 4451, '陵水黎族自治县', 2214, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2229, '469029', 4454, 4453, '保亭黎族苗族自治县', 2214, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2230, '469030', 4456, 4455, '琼中黎族苗族自治县', 2214, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2231, '500000', 4538, 4459, '重庆市', 2203, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2232, '501000', 4537, 4460, '重庆市', 2231, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2233, '500101', 4462, 4461, '万州区', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2234, '500102', 4464, 4463, '涪陵区', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2235, '500103', 4466, 4465, '渝中区', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2236, '500104', 4468, 4467, '大渡口区', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2237, '500105', 4470, 4469, '江北区', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2238, '500106', 4472, 4471, '沙坪坝区', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2239, '500107', 4474, 4473, '九龙坡区', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2240, '500108', 4476, 4475, '南岸区', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2241, '500109', 4478, 4477, '北碚区', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2242, '500110', 4480, 4479, '綦江区', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2243, '500111', 4482, 4481, '大足区', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2244, '500112', 4484, 4483, '渝北区', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2245, '500113', 4486, 4485, '巴南区', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2246, '500114', 4488, 4487, '黔江区', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2247, '500115', 4490, 4489, '长寿区', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2248, '500116', 4492, 4491, '江津区', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2249, '500117', 4494, 4493, '合川区', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2250, '500118', 4496, 4495, '永川区', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2251, '500119', 4498, 4497, '南川区', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2252, '500120', 4500, 4499, '璧山区', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2253, '500151', 4502, 4501, '铜梁区', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2254, '500152', 4504, 4503, '潼南区', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2255, '500153', 4506, 4505, '荣昌区', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2256, '500154', 4508, 4507, '开州区', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2257, '500155', 4510, 4509, '梁平区', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2258, '500156', 4512, 4511, '武隆区', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2259, '500229', 4514, 4513, '城口县', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2260, '500230', 4516, 4515, '丰都县', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2261, '500231', 4518, 4517, '垫江县', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2262, '500233', 4520, 4519, '忠县', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2263, '500235', 4522, 4521, '云阳县', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2264, '500236', 4524, 4523, '奉节县', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2265, '500237', 4526, 4525, '巫山县', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2266, '500238', 4528, 4527, '巫溪县', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2267, '500240', 4530, 4529, '石柱土家族自治县', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2268, '500241', 4532, 4531, '秀山土家族苗族自治县', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2269, '500242', 4534, 4533, '酉阳土家族苗族自治县', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2270, '500243', 4536, 4535, '彭水苗族土家族自治县', 2232, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2271, '510000', 4948, 4539, '四川省', 2231, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2272, '510100', 4581, 4540, '成都市', 2271, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2273, '510104', 4542, 4541, '锦江区', 2272, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2274, '510105', 4544, 4543, '青羊区', 2272, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2275, '510106', 4546, 4545, '金牛区', 2272, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2276, '510107', 4548, 4547, '武侯区', 2272, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2277, '510108', 4550, 4549, '成华区', 2272, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2278, '510112', 4552, 4551, '龙泉驿区', 2272, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2279, '510113', 4554, 4553, '青白江区', 2272, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2280, '510114', 4556, 4555, '新都区', 2272, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2281, '510115', 4558, 4557, '温江区', 2272, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2282, '510116', 4560, 4559, '双流区', 2272, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2283, '510117', 4562, 4561, '郫都区', 2272, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2284, '510121', 4564, 4563, '金堂县', 2272, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2285, '510129', 4566, 4565, '大邑县', 2272, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2286, '510131', 4568, 4567, '蒲江县', 2272, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2287, '510132', 4570, 4569, '新津县', 2272, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2288, '510181', 4572, 4571, '都江堰市', 2272, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2289, '510182', 4574, 4573, '彭州市', 2272, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2290, '510183', 4576, 4575, '邛崃市', 2272, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2291, '510184', 4578, 4577, '崇州市', 2272, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2292, '510185', 4580, 4579, '简阳市', 2272, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2293, '510300', 4595, 4582, '自贡市', 2271, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2294, '510302', 4584, 4583, '自流井区', 2293, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2295, '510303', 4586, 4585, '贡井区', 2293, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2296, '510304', 4588, 4587, '大安区', 2293, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2297, '510311', 4590, 4589, '沿滩区', 2293, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2298, '510321', 4592, 4591, '荣县', 2293, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2299, '510322', 4594, 4593, '富顺县', 2293, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2300, '510400', 4607, 4596, '攀枝花市', 2271, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2301, '510402', 4598, 4597, '东区', 2300, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2302, '510403', 4600, 4599, '西区', 2300, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2303, '510411', 4602, 4601, '仁和区', 2300, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2304, '510421', 4604, 4603, '米易县', 2300, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2305, '510422', 4606, 4605, '盐边县', 2300, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2306, '510500', 4623, 4608, '泸州市', 2271, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2307, '510502', 4610, 4609, '江阳区', 2306, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2308, '510503', 4612, 4611, '纳溪区', 2306, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2309, '510504', 4614, 4613, '龙马潭区', 2306, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2310, '510521', 4616, 4615, '泸县', 2306, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2311, '510522', 4618, 4617, '合江县', 2306, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2312, '510524', 4620, 4619, '叙永县', 2306, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2313, '510525', 4622, 4621, '古蔺县', 2306, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2314, '510600', 4637, 4624, '德阳市', 2271, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2315, '510603', 4626, 4625, '旌阳区', 2314, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2316, '510604', 4628, 4627, '罗江区', 2314, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2317, '510623', 4630, 4629, '中江县', 2314, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2318, '510681', 4632, 4631, '广汉市', 2314, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2319, '510682', 4634, 4633, '什邡市', 2314, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2320, '510683', 4636, 4635, '绵竹市', 2314, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2321, '510700', 4657, 4638, '绵阳市', 2271, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2322, '510703', 4640, 4639, '涪城区', 2321, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2323, '510704', 4642, 4641, '游仙区', 2321, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2324, '510705', 4644, 4643, '安州区', 2321, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2325, '510722', 4646, 4645, '三台县', 2321, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2326, '510723', 4648, 4647, '盐亭县', 2321, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2327, '510725', 4650, 4649, '梓潼县', 2321, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2328, '510726', 4652, 4651, '北川羌族自治县', 2321, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2329, '510727', 4654, 4653, '平武县', 2321, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2330, '510781', 4656, 4655, '江油市', 2321, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2331, '510800', 4673, 4658, '广元市', 2271, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2332, '510802', 4660, 4659, '利州区', 2331, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2333, '510811', 4662, 4661, '昭化区', 2331, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2334, '510812', 4664, 4663, '朝天区', 2331, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2335, '510821', 4666, 4665, '旺苍县', 2331, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2336, '510822', 4668, 4667, '青川县', 2331, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2337, '510823', 4670, 4669, '剑阁县', 2331, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2338, '510824', 4672, 4671, '苍溪县', 2331, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2339, '510900', 4685, 4674, '遂宁市', 2271, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2340, '510903', 4676, 4675, '船山区', 2339, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2341, '510904', 4678, 4677, '安居区', 2339, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2342, '510921', 4680, 4679, '蓬溪县', 2339, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2343, '510922', 4682, 4681, '射洪县', 2339, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2344, '510923', 4684, 4683, '大英县', 2339, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2345, '511000', 4697, 4686, '内江市', 2271, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2346, '511002', 4688, 4687, '市中区', 2345, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2347, '511011', 4690, 4689, '东兴区', 2345, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2348, '511024', 4692, 4691, '威远县', 2345, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2349, '511025', 4694, 4693, '资中县', 2345, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2350, '511083', 4696, 4695, '隆昌市', 2345, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2351, '511100', 4721, 4698, '乐山市', 2271, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2352, '511102', 4700, 4699, '市中区', 2351, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2353, '511111', 4702, 4701, '沙湾区', 2351, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2354, '511112', 4704, 4703, '五通桥区', 2351, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2355, '511113', 4706, 4705, '金口河区', 2351, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2356, '511123', 4708, 4707, '犍为县', 2351, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2357, '511124', 4710, 4709, '井研县', 2351, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2358, '511126', 4712, 4711, '夹江县', 2351, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2359, '511129', 4714, 4713, '沐川县', 2351, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2360, '511132', 4716, 4715, '峨边彝族自治县', 2351, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2361, '511133', 4718, 4717, '马边彝族自治县', 2351, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2362, '511181', 4720, 4719, '峨眉山市', 2351, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2363, '511300', 4741, 4722, '南充市', 2271, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2364, '511302', 4724, 4723, '顺庆区', 2363, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2365, '511303', 4726, 4725, '高坪区', 2363, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2366, '511304', 4728, 4727, '嘉陵区', 2363, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2367, '511321', 4730, 4729, '南部县', 2363, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2368, '511322', 4732, 4731, '营山县', 2363, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2369, '511323', 4734, 4733, '蓬安县', 2363, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2370, '511324', 4736, 4735, '仪陇县', 2363, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2371, '511325', 4738, 4737, '西充县', 2363, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2372, '511381', 4740, 4739, '阆中市', 2363, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2373, '511400', 4755, 4742, '眉山市', 2271, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2374, '511402', 4744, 4743, '东坡区', 2373, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2375, '511403', 4746, 4745, '彭山区', 2373, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2376, '511421', 4748, 4747, '仁寿县', 2373, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2377, '511423', 4750, 4749, '洪雅县', 2373, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2378, '511424', 4752, 4751, '丹棱县', 2373, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2379, '511425', 4754, 4753, '青神县', 2373, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2380, '511500', 4777, 4756, '宜宾市', 2271, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2381, '511502', 4758, 4757, '翠屏区', 2380, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2382, '511503', 4760, 4759, '南溪区', 2380, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2383, '511504', 4762, 4761, '叙州区', 2380, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2384, '511523', 4764, 4763, '江安县', 2380, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2385, '511524', 4766, 4765, '长宁县', 2380, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2386, '511525', 4768, 4767, '高县', 2380, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2387, '511526', 4770, 4769, '珙县', 2380, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2388, '511527', 4772, 4771, '筠连县', 2380, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2389, '511528', 4774, 4773, '兴文县', 2380, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2390, '511529', 4776, 4775, '屏山县', 2380, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2391, '511600', 4791, 4778, '广安市', 2271, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2392, '511602', 4780, 4779, '广安区', 2391, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2393, '511603', 4782, 4781, '前锋区', 2391, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2394, '511621', 4784, 4783, '岳池县', 2391, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2395, '511622', 4786, 4785, '武胜县', 2391, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2396, '511623', 4788, 4787, '邻水县', 2391, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2397, '511681', 4790, 4789, '华蓥市', 2391, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2398, '511700', 4807, 4792, '达州市', 2271, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2399, '511702', 4794, 4793, '通川区', 2398, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2400, '511703', 4796, 4795, '达川区', 2398, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2401, '511722', 4798, 4797, '宣汉县', 2398, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2402, '511723', 4800, 4799, '开江县', 2398, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2403, '511724', 4802, 4801, '大竹县', 2398, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2404, '511725', 4804, 4803, '渠县', 2398, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2405, '511781', 4806, 4805, '万源市', 2398, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2406, '511800', 4825, 4808, '雅安市', 2271, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2407, '511802', 4810, 4809, '雨城区', 2406, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2408, '511803', 4812, 4811, '名山区', 2406, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2409, '511822', 4814, 4813, '荥经县', 2406, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2410, '511823', 4816, 4815, '汉源县', 2406, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2411, '511824', 4818, 4817, '石棉县', 2406, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2412, '511825', 4820, 4819, '天全县', 2406, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2413, '511826', 4822, 4821, '芦山县', 2406, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2414, '511827', 4824, 4823, '宝兴县', 2406, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2415, '511900', 4837, 4826, '巴中市', 2271, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2416, '511902', 4828, 4827, '巴州区', 2415, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2417, '511903', 4830, 4829, '恩阳区', 2415, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2418, '511921', 4832, 4831, '通江县', 2415, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2419, '511922', 4834, 4833, '南江县', 2415, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2420, '511923', 4836, 4835, '平昌县', 2415, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2421, '512000', 4845, 4838, '资阳市', 2271, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2422, '512002', 4840, 4839, '雁江区', 2421, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2423, '512021', 4842, 4841, '安岳县', 2421, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2424, '512022', 4844, 4843, '乐至县', 2421, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2425, '513200', 4873, 4846, '阿坝藏族羌族自治州', 2271, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2426, '513201', 4848, 4847, '马尔康市', 2425, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2427, '513221', 4850, 4849, '汶川县', 2425, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2428, '513222', 4852, 4851, '理县', 2425, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2429, '513223', 4854, 4853, '茂县', 2425, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2430, '513224', 4856, 4855, '松潘县', 2425, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2431, '513225', 4858, 4857, '九寨沟县', 2425, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2432, '513226', 4860, 4859, '金川县', 2425, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2433, '513227', 4862, 4861, '小金县', 2425, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2434, '513228', 4864, 4863, '黑水县', 2425, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2435, '513230', 4866, 4865, '壤塘县', 2425, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2436, '513231', 4868, 4867, '阿坝县', 2425, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2437, '513232', 4870, 4869, '若尔盖县', 2425, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2438, '513233', 4872, 4871, '红原县', 2425, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2439, '513300', 4911, 4874, '甘孜藏族自治州', 2271, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2440, '513301', 4876, 4875, '康定市', 2439, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2441, '513322', 4878, 4877, '泸定县', 2439, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2442, '513323', 4880, 4879, '丹巴县', 2439, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2443, '513324', 4882, 4881, '九龙县', 2439, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2444, '513325', 4884, 4883, '雅江县', 2439, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2445, '513326', 4886, 4885, '道孚县', 2439, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2446, '513327', 4888, 4887, '炉霍县', 2439, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2447, '513328', 4890, 4889, '甘孜县', 2439, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2448, '513329', 4892, 4891, '新龙县', 2439, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2449, '513330', 4894, 4893, '德格县', 2439, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2450, '513331', 4896, 4895, '白玉县', 2439, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2451, '513332', 4898, 4897, '石渠县', 2439, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2452, '513333', 4900, 4899, '色达县', 2439, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2453, '513334', 4902, 4901, '理塘县', 2439, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2454, '513335', 4904, 4903, '巴塘县', 2439, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2455, '513336', 4906, 4905, '乡城县', 2439, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2456, '513337', 4908, 4907, '稻城县', 2439, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2457, '513338', 4910, 4909, '得荣县', 2439, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2458, '513400', 4947, 4912, '凉山彝族自治州', 2271, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2459, '513401', 4914, 4913, '西昌市', 2458, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2460, '513422', 4916, 4915, '木里藏族自治县', 2458, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2461, '513423', 4918, 4917, '盐源县', 2458, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2462, '513424', 4920, 4919, '德昌县', 2458, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2463, '513425', 4922, 4921, '会理县', 2458, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2464, '513426', 4924, 4923, '会东县', 2458, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2465, '513427', 4926, 4925, '宁南县', 2458, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2466, '513428', 4928, 4927, '普格县', 2458, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2467, '513429', 4930, 4929, '布拖县', 2458, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2468, '513430', 4932, 4931, '金阳县', 2458, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2469, '513431', 4934, 4933, '昭觉县', 2458, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2470, '513432', 4936, 4935, '喜德县', 2458, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2471, '513433', 4938, 4937, '冕宁县', 2458, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2472, '513434', 4940, 4939, '越西县', 2458, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2473, '513435', 4942, 4941, '甘洛县', 2458, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2474, '513436', 4944, 4943, '美姑县', 2458, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2475, '513437', 4946, 4945, '雷波县', 2458, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2476, '520000', 5144, 4949, '贵州省', 2271, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2477, '520100', 4971, 4950, '贵阳市', 2476, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2478, '520102', 4952, 4951, '南明区', 2477, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2479, '520103', 4954, 4953, '云岩区', 2477, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2480, '520111', 4956, 4955, '花溪区', 2477, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2481, '520112', 4958, 4957, '乌当区', 2477, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2482, '520113', 4960, 4959, '白云区', 2477, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2483, '520115', 4962, 4961, '观山湖区', 2477, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2484, '520121', 4964, 4963, '开阳县', 2477, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2485, '520122', 4966, 4965, '息烽县', 2477, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2486, '520123', 4968, 4967, '修文县', 2477, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2487, '520181', 4970, 4969, '清镇市', 2477, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2488, '520200', 4981, 4972, '六盘水市', 2476, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2489, '520201', 4974, 4973, '钟山区', 2488, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2490, '520203', 4976, 4975, '六枝特区', 2488, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2491, '520221', 4978, 4977, '水城县', 2488, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2492, '520281', 4980, 4979, '盘州市', 2488, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2493, '520300', 5011, 4982, '遵义市', 2476, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2494, '520302', 4984, 4983, '红花岗区', 2493, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2495, '520303', 4986, 4985, '汇川区', 2493, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2496, '520304', 4988, 4987, '播州区', 2493, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2497, '520322', 4990, 4989, '桐梓县', 2493, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2498, '520323', 4992, 4991, '绥阳县', 2493, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2499, '520324', 4994, 4993, '正安县', 2493, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2500, '520325', 4996, 4995, '道真仡佬族苗族自治县', 2493, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2501, '520326', 4998, 4997, '务川仡佬族苗族自治县', 2493, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2502, '520327', 5000, 4999, '凤冈县', 2493, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2503, '520328', 5002, 5001, '湄潭县', 2493, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2504, '520329', 5004, 5003, '余庆县', 2493, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2505, '520330', 5006, 5005, '习水县', 2493, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2506, '520381', 5008, 5007, '赤水市', 2493, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2507, '520382', 5010, 5009, '仁怀市', 2493, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2508, '520400', 5025, 5012, '安顺市', 2476, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2509, '520402', 5014, 5013, '西秀区', 2508, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2510, '520403', 5016, 5015, '平坝区', 2508, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2511, '520422', 5018, 5017, '普定县', 2508, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2512, '520423', 5020, 5019, '镇宁布依族苗族自治县', 2508, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2513, '520424', 5022, 5021, '关岭布依族苗族自治县', 2508, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2514, '520425', 5024, 5023, '紫云苗族布依族自治县', 2508, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2515, '520500', 5043, 5026, '毕节市', 2476, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2516, '520502', 5028, 5027, '七星关区', 2515, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2517, '520521', 5030, 5029, '大方县', 2515, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2518, '520522', 5032, 5031, '黔西县', 2515, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2519, '520523', 5034, 5033, '金沙县', 2515, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2520, '520524', 5036, 5035, '织金县', 2515, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2521, '520525', 5038, 5037, '纳雍县', 2515, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2522, '520526', 5040, 5039, '威宁彝族回族苗族自治县', 2515, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2523, '520527', 5042, 5041, '赫章县', 2515, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2524, '520600', 5065, 5044, '铜仁市', 2476, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2525, '520602', 5046, 5045, '碧江区', 2524, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2526, '520603', 5048, 5047, '万山区', 2524, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2527, '520621', 5050, 5049, '江口县', 2524, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2528, '520622', 5052, 5051, '玉屏侗族自治县', 2524, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2529, '520623', 5054, 5053, '石阡县', 2524, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2530, '520624', 5056, 5055, '思南县', 2524, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2531, '520625', 5058, 5057, '印江土家族苗族自治县', 2524, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2532, '520626', 5060, 5059, '德江县', 2524, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2533, '520627', 5062, 5061, '沿河土家族自治县', 2524, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2534, '520628', 5064, 5063, '松桃苗族自治县', 2524, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2535, '522300', 5083, 5066, '黔西南布依族苗族自治州', 2476, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2536, '522301', 5068, 5067, '兴义市', 2535, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2537, '522302', 5070, 5069, '兴仁市', 2535, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2538, '522323', 5072, 5071, '普安县', 2535, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2539, '522324', 5074, 5073, '晴隆县', 2535, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2540, '522325', 5076, 5075, '贞丰县', 2535, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2541, '522326', 5078, 5077, '望谟县', 2535, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2542, '522327', 5080, 5079, '册亨县', 2535, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2543, '522328', 5082, 5081, '安龙县', 2535, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2544, '522600', 5117, 5084, '黔东南苗族侗族自治州', 2476, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2545, '522601', 5086, 5085, '凯里市', 2544, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2546, '522622', 5088, 5087, '黄平县', 2544, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2547, '522623', 5090, 5089, '施秉县', 2544, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2548, '522624', 5092, 5091, '三穗县', 2544, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2549, '522625', 5094, 5093, '镇远县', 2544, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2550, '522626', 5096, 5095, '岑巩县', 2544, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2551, '522627', 5098, 5097, '天柱县', 2544, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2552, '522628', 5100, 5099, '锦屏县', 2544, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2553, '522629', 5102, 5101, '剑河县', 2544, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2554, '522630', 5104, 5103, '台江县', 2544, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2555, '522631', 5106, 5105, '黎平县', 2544, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2556, '522632', 5108, 5107, '榕江县', 2544, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2557, '522633', 5110, 5109, '从江县', 2544, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2558, '522634', 5112, 5111, '雷山县', 2544, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2559, '522635', 5114, 5113, '麻江县', 2544, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2560, '522636', 5116, 5115, '丹寨县', 2544, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2561, '522700', 5143, 5118, '黔南布依族苗族自治州', 2476, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2562, '522701', 5120, 5119, '都匀市', 2561, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2563, '522702', 5122, 5121, '福泉市', 2561, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2564, '522722', 5124, 5123, '荔波县', 2561, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2565, '522723', 5126, 5125, '贵定县', 2561, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2566, '522725', 5128, 5127, '瓮安县', 2561, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2567, '522726', 5130, 5129, '独山县', 2561, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2568, '522727', 5132, 5131, '平塘县', 2561, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2569, '522728', 5134, 5133, '罗甸县', 2561, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2570, '522729', 5136, 5135, '长顺县', 2561, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2571, '522730', 5138, 5137, '龙里县', 2561, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2572, '522731', 5140, 5139, '惠水县', 2561, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2573, '522732', 5142, 5141, '三都水族自治县', 2561, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2574, '530000', 5436, 5145, '云南省', 2476, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2575, '530100', 5175, 5146, '昆明市', 2574, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2576, '530102', 5148, 5147, '五华区', 2575, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2577, '530103', 5150, 5149, '盘龙区', 2575, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2578, '530111', 5152, 5151, '官渡区', 2575, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2579, '530112', 5154, 5153, '西山区', 2575, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2580, '530113', 5156, 5155, '东川区', 2575, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2581, '530114', 5158, 5157, '呈贡区', 2575, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2582, '530115', 5160, 5159, '晋宁区', 2575, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2583, '530124', 5162, 5161, '富民县', 2575, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2584, '530125', 5164, 5163, '宜良县', 2575, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2585, '530126', 5166, 5165, '石林彝族自治县', 2575, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2586, '530127', 5168, 5167, '嵩明县', 2575, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2587, '530128', 5170, 5169, '禄劝彝族苗族自治县', 2575, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2588, '530129', 5172, 5171, '寻甸回族彝族自治县', 2575, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2589, '530181', 5174, 5173, '安宁市', 2575, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2590, '530300', 5195, 5176, '曲靖市', 2574, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2591, '530302', 5178, 5177, '麒麟区', 2590, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2592, '530303', 5180, 5179, '沾益区', 2590, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2593, '530304', 5182, 5181, '马龙区', 2590, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2594, '530322', 5184, 5183, '陆良县', 2590, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2595, '530323', 5186, 5185, '师宗县', 2590, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2596, '530324', 5188, 5187, '罗平县', 2590, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2597, '530325', 5190, 5189, '富源县', 2590, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2598, '530326', 5192, 5191, '会泽县', 2590, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2599, '530381', 5194, 5193, '宣威市', 2590, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2600, '530400', 5215, 5196, '玉溪市', 2574, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2601, '530402', 5198, 5197, '红塔区', 2600, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2602, '530403', 5200, 5199, '江川区', 2600, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2603, '530422', 5202, 5201, '澄江县', 2600, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2604, '530423', 5204, 5203, '通海县', 2600, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2605, '530424', 5206, 5205, '华宁县', 2600, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2606, '530425', 5208, 5207, '易门县', 2600, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2607, '530426', 5210, 5209, '峨山彝族自治县', 2600, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2608, '530427', 5212, 5211, '新平彝族傣族自治县', 2600, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2609, '530428', 5214, 5213, '元江哈尼族彝族傣族自治县', 2600, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2610, '530500', 5227, 5216, '保山市', 2574, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2611, '530502', 5218, 5217, '隆阳区', 2610, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2612, '530521', 5220, 5219, '施甸县', 2610, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2613, '530523', 5222, 5221, '龙陵县', 2610, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2614, '530524', 5224, 5223, '昌宁县', 2610, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2615, '530581', 5226, 5225, '腾冲市', 2610, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2616, '530600', 5251, 5228, '昭通市', 2574, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2617, '530602', 5230, 5229, '昭阳区', 2616, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2618, '530621', 5232, 5231, '鲁甸县', 2616, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2619, '530622', 5234, 5233, '巧家县', 2616, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2620, '530623', 5236, 5235, '盐津县', 2616, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2621, '530624', 5238, 5237, '大关县', 2616, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2622, '530625', 5240, 5239, '永善县', 2616, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2623, '530626', 5242, 5241, '绥江县', 2616, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2624, '530627', 5244, 5243, '镇雄县', 2616, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2625, '530628', 5246, 5245, '彝良县', 2616, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2626, '530629', 5248, 5247, '威信县', 2616, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2627, '530681', 5250, 5249, '水富市', 2616, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2628, '530700', 5263, 5252, '丽江市', 2574, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2629, '530702', 5254, 5253, '古城区', 2628, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2630, '530721', 5256, 5255, '玉龙纳西族自治县', 2628, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2631, '530722', 5258, 5257, '永胜县', 2628, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2632, '530723', 5260, 5259, '华坪县', 2628, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2633, '530724', 5262, 5261, '宁蒗彝族自治县', 2628, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2634, '530800', 5285, 5264, '普洱市', 2574, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2635, '530802', 5266, 5265, '思茅区', 2634, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2636, '530821', 5268, 5267, '宁洱哈尼族彝族自治县', 2634, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2637, '530822', 5270, 5269, '墨江哈尼族自治县', 2634, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2638, '530823', 5272, 5271, '景东彝族自治县', 2634, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2639, '530824', 5274, 5273, '景谷傣族彝族自治县', 2634, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2640, '530825', 5276, 5275, '镇沅彝族哈尼族拉祜族自治县', 2634, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2641, '530826', 5278, 5277, '江城哈尼族彝族自治县', 2634, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2642, '530827', 5280, 5279, '孟连傣族拉祜族佤族自治县', 2634, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2643, '530828', 5282, 5281, '澜沧拉祜族自治县', 2634, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2644, '530829', 5284, 5283, '西盟佤族自治县', 2634, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2645, '530900', 5303, 5286, '临沧市', 2574, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2646, '530902', 5288, 5287, '临翔区', 2645, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2647, '530921', 5290, 5289, '凤庆县', 2645, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2648, '530922', 5292, 5291, '云县', 2645, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2649, '530923', 5294, 5293, '永德县', 2645, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2650, '530924', 5296, 5295, '镇康县', 2645, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2651, '530925', 5298, 5297, '双江拉祜族佤族布朗族傣族自治县', 2645, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2652, '530926', 5300, 5299, '耿马傣族佤族自治县', 2645, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2653, '530927', 5302, 5301, '沧源佤族自治县', 2645, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2654, '532300', 5325, 5304, '楚雄彝族自治州', 2574, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2655, '532301', 5306, 5305, '楚雄市', 2654, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2656, '532322', 5308, 5307, '双柏县', 2654, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2657, '532323', 5310, 5309, '牟定县', 2654, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2658, '532324', 5312, 5311, '南华县', 2654, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2659, '532325', 5314, 5313, '姚安县', 2654, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2660, '532326', 5316, 5315, '大姚县', 2654, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2661, '532327', 5318, 5317, '永仁县', 2654, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2662, '532328', 5320, 5319, '元谋县', 2654, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2663, '532329', 5322, 5321, '武定县', 2654, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2664, '532331', 5324, 5323, '禄丰县', 2654, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2665, '532500', 5353, 5326, '红河哈尼族彝族自治州', 2574, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2666, '532501', 5328, 5327, '个旧市', 2665, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2667, '532502', 5330, 5329, '开远市', 2665, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2668, '532503', 5332, 5331, '蒙自市', 2665, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2669, '532504', 5334, 5333, '弥勒市', 2665, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2670, '532523', 5336, 5335, '屏边苗族自治县', 2665, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2671, '532524', 5338, 5337, '建水县', 2665, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2672, '532525', 5340, 5339, '石屏县', 2665, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2673, '532527', 5342, 5341, '泸西县', 2665, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2674, '532528', 5344, 5343, '元阳县', 2665, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2675, '532529', 5346, 5345, '红河县', 2665, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2676, '532530', 5348, 5347, '金平苗族瑶族傣族自治县', 2665, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2677, '532531', 5350, 5349, '绿春县', 2665, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2678, '532532', 5352, 5351, '河口瑶族自治县', 2665, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2679, '532600', 5371, 5354, '文山壮族苗族自治州', 2574, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2680, '532601', 5356, 5355, '文山市', 2679, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2681, '532622', 5358, 5357, '砚山县', 2679, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2682, '532623', 5360, 5359, '西畴县', 2679, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2683, '532624', 5362, 5361, '麻栗坡县', 2679, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2684, '532625', 5364, 5363, '马关县', 2679, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2685, '532626', 5366, 5365, '丘北县', 2679, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2686, '532627', 5368, 5367, '广南县', 2679, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2687, '532628', 5370, 5369, '富宁县', 2679, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2688, '532800', 5379, 5372, '西双版纳傣族自治州', 2574, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2689, '532801', 5374, 5373, '景洪市', 2688, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2690, '532822', 5376, 5375, '勐海县', 2688, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2691, '532823', 5378, 5377, '勐腊县', 2688, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2692, '532900', 5405, 5380, '大理白族自治州', 2574, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2693, '532901', 5382, 5381, '大理市', 2692, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2694, '532922', 5384, 5383, '漾濞彝族自治县', 2692, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2695, '532923', 5386, 5385, '祥云县', 2692, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2696, '532924', 5388, 5387, '宾川县', 2692, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2697, '532925', 5390, 5389, '弥渡县', 2692, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2698, '532926', 5392, 5391, '南涧彝族自治县', 2692, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2699, '532927', 5394, 5393, '巍山彝族回族自治县', 2692, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2700, '532928', 5396, 5395, '永平县', 2692, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2701, '532929', 5398, 5397, '云龙县', 2692, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2702, '532930', 5400, 5399, '洱源县', 2692, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2703, '532931', 5402, 5401, '剑川县', 2692, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2704, '532932', 5404, 5403, '鹤庆县', 2692, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2705, '533100', 5417, 5406, '德宏傣族景颇族自治州', 2574, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2706, '533102', 5408, 5407, '瑞丽市', 2705, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2707, '533103', 5410, 5409, '芒市', 2705, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2708, '533122', 5412, 5411, '梁河县', 2705, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2709, '533123', 5414, 5413, '盈江县', 2705, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2710, '533124', 5416, 5415, '陇川县', 2705, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2711, '533300', 5427, 5418, '怒江傈僳族自治州', 2574, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2712, '533301', 5420, 5419, '泸水市', 2711, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2713, '533323', 5422, 5421, '福贡县', 2711, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2714, '533324', 5424, 5423, '贡山独龙族怒族自治县', 2711, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2715, '533325', 5426, 5425, '兰坪白族普米族自治县', 2711, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2716, '533400', 5435, 5428, '迪庆藏族自治州', 2574, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2717, '533401', 5430, 5429, '香格里拉市', 2716, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2718, '533422', 5432, 5431, '德钦县', 2716, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2719, '533423', 5434, 5433, '维西傈僳族自治县', 2716, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2720, '540000', 5600, 5437, '西藏自治区', 2574, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2721, '540100', 5455, 5438, '拉萨市', 2720, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2722, '540102', 5440, 5439, '城关区', 2721, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2723, '540103', 5442, 5441, '堆龙德庆区', 2721, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2724, '540104', 5444, 5443, '达孜区', 2721, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2725, '540121', 5446, 5445, '林周县', 2721, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2726, '540122', 5448, 5447, '当雄县', 2721, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2727, '540123', 5450, 5449, '尼木县', 2721, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2728, '540124', 5452, 5451, '曲水县', 2721, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2729, '540127', 5454, 5453, '墨竹工卡县', 2721, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2730, '540200', 5493, 5456, '日喀则市', 2720, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2731, '540202', 5458, 5457, '桑珠孜区', 2730, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2732, '540221', 5460, 5459, '南木林县', 2730, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2733, '540222', 5462, 5461, '江孜县', 2730, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2734, '540223', 5464, 5463, '定日县', 2730, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2735, '540224', 5466, 5465, '萨迦县', 2730, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2736, '540225', 5468, 5467, '拉孜县', 2730, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2737, '540226', 5470, 5469, '昂仁县', 2730, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2738, '540227', 5472, 5471, '谢通门县', 2730, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2739, '540228', 5474, 5473, '白朗县', 2730, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2740, '540229', 5476, 5475, '仁布县', 2730, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2741, '540230', 5478, 5477, '康马县', 2730, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2742, '540231', 5480, 5479, '定结县', 2730, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2743, '540232', 5482, 5481, '仲巴县', 2730, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2744, '540233', 5484, 5483, '亚东县', 2730, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2745, '540234', 5486, 5485, '吉隆县', 2730, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2746, '540235', 5488, 5487, '聂拉木县', 2730, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2747, '540236', 5490, 5489, '萨嘎县', 2730, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2748, '540237', 5492, 5491, '岗巴县', 2730, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2749, '540300', 5517, 5494, '昌都市', 2720, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2750, '540302', 5496, 5495, '卡若区', 2749, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2751, '540321', 5498, 5497, '江达县', 2749, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2752, '540322', 5500, 5499, '贡觉县', 2749, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2753, '540323', 5502, 5501, '类乌齐县', 2749, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2754, '540324', 5504, 5503, '丁青县', 2749, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2755, '540325', 5506, 5505, '察雅县', 2749, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2756, '540326', 5508, 5507, '八宿县', 2749, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2757, '540327', 5510, 5509, '左贡县', 2749, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2758, '540328', 5512, 5511, '芒康县', 2749, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2759, '540329', 5514, 5513, '洛隆县', 2749, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2760, '540330', 5516, 5515, '边坝县', 2749, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2761, '540400', 5533, 5518, '林芝市', 2720, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2762, '540402', 5520, 5519, '巴宜区', 2761, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2763, '540421', 5522, 5521, '工布江达县', 2761, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2764, '540422', 5524, 5523, '米林县', 2761, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2765, '540423', 5526, 5525, '墨脱县', 2761, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2766, '540424', 5528, 5527, '波密县', 2761, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2767, '540425', 5530, 5529, '察隅县', 2761, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2768, '540426', 5532, 5531, '朗县', 2761, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2769, '540500', 5559, 5534, '山南市', 2720, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2770, '540502', 5536, 5535, '乃东区', 2769, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2771, '540521', 5538, 5537, '扎囊县', 2769, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2772, '540522', 5540, 5539, '贡嘎县', 2769, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2773, '540523', 5542, 5541, '桑日县', 2769, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2774, '540524', 5544, 5543, '琼结县', 2769, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2775, '540525', 5546, 5545, '曲松县', 2769, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2776, '540526', 5548, 5547, '措美县', 2769, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2777, '540527', 5550, 5549, '洛扎县', 2769, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2778, '540528', 5552, 5551, '加查县', 2769, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2779, '540529', 5554, 5553, '隆子县', 2769, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2780, '540530', 5556, 5555, '错那县', 2769, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2781, '540531', 5558, 5557, '浪卡子县', 2769, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2782, '540600', 5583, 5560, '那曲市', 2720, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2783, '540602', 5562, 5561, '色尼区', 2782, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2784, '540621', 5564, 5563, '嘉黎县', 2782, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2785, '540622', 5566, 5565, '比如县', 2782, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2786, '540623', 5568, 5567, '聂荣县', 2782, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2787, '540624', 5570, 5569, '安多县', 2782, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2788, '540625', 5572, 5571, '申扎县', 2782, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2789, '540626', 5574, 5573, '索县', 2782, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2790, '540627', 5576, 5575, '班戈县', 2782, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2791, '540628', 5578, 5577, '巴青县', 2782, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2792, '540629', 5580, 5579, '尼玛县', 2782, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2793, '540630', 5582, 5581, '双湖县', 2782, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2794, '542500', 5599, 5584, '阿里地区', 2720, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2795, '542521', 5586, 5585, '普兰县', 2794, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2796, '542522', 5588, 5587, '札达县', 2794, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2797, '542523', 5590, 5589, '噶尔县', 2794, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2798, '542524', 5592, 5591, '日土县', 2794, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2799, '542525', 5594, 5593, '革吉县', 2794, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2800, '542526', 5596, 5595, '改则县', 2794, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2801, '542527', 5598, 5597, '措勤县', 2794, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2802, '610000', 5836, 5601, '陕西省', 2720, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2803, '610100', 5629, 5602, '西安市', 2802, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2804, '610102', 5604, 5603, '新城区', 2803, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2805, '610103', 5606, 5605, '碑林区', 2803, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2806, '610104', 5608, 5607, '莲湖区', 2803, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2807, '610111', 5610, 5609, '灞桥区', 2803, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2808, '610112', 5612, 5611, '未央区', 2803, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2809, '610113', 5614, 5613, '雁塔区', 2803, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2810, '610114', 5616, 5615, '阎良区', 2803, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2811, '610115', 5618, 5617, '临潼区', 2803, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2812, '610116', 5620, 5619, '长安区', 2803, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2813, '610117', 5622, 5621, '高陵区', 2803, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2814, '610118', 5624, 5623, '鄠邑区', 2803, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2815, '610122', 5626, 5625, '蓝田县', 2803, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2816, '610124', 5628, 5627, '周至县', 2803, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2817, '610200', 5639, 5630, '铜川市', 2802, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2818, '610202', 5632, 5631, '王益区', 2817, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2819, '610203', 5634, 5633, '印台区', 2817, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2820, '610204', 5636, 5635, '耀州区', 2817, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2821, '610222', 5638, 5637, '宜君县', 2817, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2822, '610300', 5665, 5640, '宝鸡市', 2802, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2823, '610302', 5642, 5641, '渭滨区', 2822, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2824, '610303', 5644, 5643, '金台区', 2822, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2825, '610304', 5646, 5645, '陈仓区', 2822, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2826, '610322', 5648, 5647, '凤翔县', 2822, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2827, '610323', 5650, 5649, '岐山县', 2822, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2828, '610324', 5652, 5651, '扶风县', 2822, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2829, '610326', 5654, 5653, '眉县', 2822, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2830, '610327', 5656, 5655, '陇县', 2822, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2831, '610328', 5658, 5657, '千阳县', 2822, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2832, '610329', 5660, 5659, '麟游县', 2822, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2833, '610330', 5662, 5661, '凤县', 2822, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2834, '610331', 5664, 5663, '太白县', 2822, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2835, '610400', 5695, 5666, '咸阳市', 2802, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2836, '610402', 5668, 5667, '秦都区', 2835, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2837, '610403', 5670, 5669, '杨陵区', 2835, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2838, '610404', 5672, 5671, '渭城区', 2835, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2839, '610422', 5674, 5673, '三原县', 2835, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2840, '610423', 5676, 5675, '泾阳县', 2835, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2841, '610424', 5678, 5677, '乾县', 2835, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2842, '610425', 5680, 5679, '礼泉县', 2835, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2843, '610426', 5682, 5681, '永寿县', 2835, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2844, '610428', 5684, 5683, '长武县', 2835, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2845, '610429', 5686, 5685, '旬邑县', 2835, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2846, '610430', 5688, 5687, '淳化县', 2835, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2847, '610431', 5690, 5689, '武功县', 2835, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2848, '610481', 5692, 5691, '兴平市', 2835, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2849, '610482', 5694, 5693, '彬州市', 2835, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2850, '610500', 5719, 5696, '渭南市', 2802, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2851, '610502', 5698, 5697, '临渭区', 2850, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2852, '610503', 5700, 5699, '华州区', 2850, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2853, '610522', 5702, 5701, '潼关县', 2850, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2854, '610523', 5704, 5703, '大荔县', 2850, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2855, '610524', 5706, 5705, '合阳县', 2850, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2856, '610525', 5708, 5707, '澄城县', 2850, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2857, '610526', 5710, 5709, '蒲城县', 2850, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2858, '610527', 5712, 5711, '白水县', 2850, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2859, '610528', 5714, 5713, '富平县', 2850, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2860, '610581', 5716, 5715, '韩城市', 2850, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2861, '610582', 5718, 5717, '华阴市', 2850, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2862, '610600', 5747, 5720, '延安市', 2802, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2863, '610602', 5722, 5721, '宝塔区', 2862, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2864, '610603', 5724, 5723, '安塞区', 2862, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2865, '610621', 5726, 5725, '延长县', 2862, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2866, '610622', 5728, 5727, '延川县', 2862, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2867, '610623', 5730, 5729, '子长县', 2862, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2868, '610625', 5732, 5731, '志丹县', 2862, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2869, '610626', 5734, 5733, '吴起县', 2862, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2870, '610627', 5736, 5735, '甘泉县', 2862, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2871, '610628', 5738, 5737, '富县', 2862, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2872, '610629', 5740, 5739, '洛川县', 2862, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2873, '610630', 5742, 5741, '宜川县', 2862, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2874, '610631', 5744, 5743, '黄龙县', 2862, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2875, '610632', 5746, 5745, '黄陵县', 2862, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2876, '610700', 5771, 5748, '汉中市', 2802, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2877, '610702', 5750, 5749, '汉台区', 2876, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2878, '610703', 5752, 5751, '南郑区', 2876, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2879, '610722', 5754, 5753, '城固县', 2876, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2880, '610723', 5756, 5755, '洋县', 2876, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2881, '610724', 5758, 5757, '西乡县', 2876, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2882, '610725', 5760, 5759, '勉县', 2876, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2883, '610726', 5762, 5761, '宁强县', 2876, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2884, '610727', 5764, 5763, '略阳县', 2876, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2885, '610728', 5766, 5765, '镇巴县', 2876, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2886, '610729', 5768, 5767, '留坝县', 2876, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2887, '610730', 5770, 5769, '佛坪县', 2876, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2888, '610800', 5797, 5772, '榆林市', 2802, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2889, '610802', 5774, 5773, '榆阳区', 2888, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2890, '610803', 5776, 5775, '横山区', 2888, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2891, '610822', 5778, 5777, '府谷县', 2888, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2892, '610824', 5780, 5779, '靖边县', 2888, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2893, '610825', 5782, 5781, '定边县', 2888, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2894, '610826', 5784, 5783, '绥德县', 2888, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2895, '610827', 5786, 5785, '米脂县', 2888, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2896, '610828', 5788, 5787, '佳县', 2888, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2897, '610829', 5790, 5789, '吴堡县', 2888, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2898, '610830', 5792, 5791, '清涧县', 2888, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2899, '610831', 5794, 5793, '子洲县', 2888, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2900, '610881', 5796, 5795, '神木市', 2888, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2901, '610900', 5819, 5798, '安康市', 2802, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2902, '610902', 5800, 5799, '汉滨区', 2901, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2903, '610921', 5802, 5801, '汉阴县', 2901, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2904, '610922', 5804, 5803, '石泉县', 2901, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2905, '610923', 5806, 5805, '宁陕县', 2901, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2906, '610924', 5808, 5807, '紫阳县', 2901, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2907, '610925', 5810, 5809, '岚皋县', 2901, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2908, '610926', 5812, 5811, '平利县', 2901, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2909, '610927', 5814, 5813, '镇坪县', 2901, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2910, '610928', 5816, 5815, '旬阳县', 2901, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2911, '610929', 5818, 5817, '白河县', 2901, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2912, '611000', 5835, 5820, '商洛市', 2802, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2913, '611002', 5822, 5821, '商州区', 2912, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2914, '611021', 5824, 5823, '洛南县', 2912, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2915, '611022', 5826, 5825, '丹凤县', 2912, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2916, '611023', 5828, 5827, '商南县', 2912, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2917, '611024', 5830, 5829, '山阳县', 2912, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2918, '611025', 5832, 5831, '镇安县', 2912, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2919, '611026', 5834, 5833, '柞水县', 2912, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2920, '620000', 6038, 5837, '甘肃省', 2802, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2921, '620100', 5855, 5838, '兰州市', 2920, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2922, '620102', 5840, 5839, '城关区', 2921, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2923, '620103', 5842, 5841, '七里河区', 2921, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2924, '620104', 5844, 5843, '西固区', 2921, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2925, '620105', 5846, 5845, '安宁区', 2921, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2926, '620111', 5848, 5847, '红古区', 2921, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2927, '620121', 5850, 5849, '永登县', 2921, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2928, '620122', 5852, 5851, '皋兰县', 2921, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2929, '620123', 5854, 5853, '榆中县', 2921, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2930, '620200', 5863, 5856, '嘉峪关市', 2920, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2931, '620201', 5858, 5857, '嘉峪关市', 2930, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2932, '620302', 5860, 5859, '金川区', 2930, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2933, '620321', 5862, 5861, '永昌县', 2930, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2934, '620400', 5875, 5864, '白银市', 2920, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2935, '620402', 5866, 5865, '白银区', 2934, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2936, '620403', 5868, 5867, '平川区', 2934, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2937, '620421', 5870, 5869, '靖远县', 2934, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2938, '620422', 5872, 5871, '会宁县', 2934, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2939, '620423', 5874, 5873, '景泰县', 2934, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2940, '620500', 5891, 5876, '天水市', 2920, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2941, '620502', 5878, 5877, '秦州区', 2940, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2942, '620503', 5880, 5879, '麦积区', 2940, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2943, '620521', 5882, 5881, '清水县', 2940, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2944, '620522', 5884, 5883, '秦安县', 2940, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2945, '620523', 5886, 5885, '甘谷县', 2940, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2946, '620524', 5888, 5887, '武山县', 2940, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2947, '620525', 5890, 5889, '张家川回族自治县', 2940, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2948, '620600', 5901, 5892, '武威市', 2920, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2949, '620602', 5894, 5893, '凉州区', 2948, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2950, '620621', 5896, 5895, '民勤县', 2948, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2951, '620622', 5898, 5897, '古浪县', 2948, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2952, '620623', 5900, 5899, '天祝藏族自治县', 2948, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2953, '620700', 5915, 5902, '张掖市', 2920, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2954, '620702', 5904, 5903, '甘州区', 2953, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2955, '620721', 5906, 5905, '肃南裕固族自治县', 2953, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2956, '620722', 5908, 5907, '民乐县', 2953, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2957, '620723', 5910, 5909, '临泽县', 2953, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2958, '620724', 5912, 5911, '高台县', 2953, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2959, '620725', 5914, 5913, '山丹县', 2953, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2960, '620800', 5931, 5916, '平凉市', 2920, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2961, '620802', 5918, 5917, '崆峒区', 2960, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2962, '620821', 5920, 5919, '泾川县', 2960, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2963, '620822', 5922, 5921, '灵台县', 2960, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2964, '620823', 5924, 5923, '崇信县', 2960, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2965, '620825', 5926, 5925, '庄浪县', 2960, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2966, '620826', 5928, 5927, '静宁县', 2960, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2967, '620881', 5930, 5929, '华亭市', 2960, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2968, '620900', 5947, 5932, '酒泉市', 2920, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2969, '620902', 5934, 5933, '肃州区', 2968, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2970, '620921', 5936, 5935, '金塔县', 2968, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2971, '620922', 5938, 5937, '瓜州县', 2968, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2972, '620923', 5940, 5939, '肃北蒙古族自治县', 2968, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2973, '620924', 5942, 5941, '阿克塞哈萨克族自治县', 2968, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2974, '620981', 5944, 5943, '玉门市', 2968, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2975, '620982', 5946, 5945, '敦煌市', 2968, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2976, '621000', 5965, 5948, '庆阳市', 2920, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2977, '621002', 5950, 5949, '西峰区', 2976, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2978, '621021', 5952, 5951, '庆城县', 2976, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2979, '621022', 5954, 5953, '环县', 2976, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2980, '621023', 5956, 5955, '华池县', 2976, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2981, '621024', 5958, 5957, '合水县', 2976, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2982, '621025', 5960, 5959, '正宁县', 2976, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2983, '621026', 5962, 5961, '宁县', 2976, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2984, '621027', 5964, 5963, '镇原县', 2976, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2985, '621100', 5981, 5966, '定西市', 2920, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2986, '621102', 5968, 5967, '安定区', 2985, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2987, '621121', 5970, 5969, '通渭县', 2985, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2988, '621122', 5972, 5971, '陇西县', 2985, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2989, '621123', 5974, 5973, '渭源县', 2985, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2990, '621124', 5976, 5975, '临洮县', 2985, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2991, '621125', 5978, 5977, '漳县', 2985, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2992, '621126', 5980, 5979, '岷县', 2985, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2993, '621200', 6001, 5982, '陇南市', 2920, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2994, '621202', 5984, 5983, '武都区', 2993, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2995, '621221', 5986, 5985, '成县', 2993, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2996, '621222', 5988, 5987, '文县', 2993, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2997, '621223', 5990, 5989, '宕昌县', 2993, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2998, '621224', 5992, 5991, '康县', 2993, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (2999, '621225', 5994, 5993, '西和县', 2993, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3000, '621226', 5996, 5995, '礼县', 2993, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3001, '621227', 5998, 5997, '徽县', 2993, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3002, '621228', 6000, 5999, '两当县', 2993, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3003, '622900', 6019, 6002, '临夏回族自治州', 2920, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3004, '622901', 6004, 6003, '临夏市', 3003, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3005, '622921', 6006, 6005, '临夏县', 3003, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3006, '622922', 6008, 6007, '康乐县', 3003, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3007, '622923', 6010, 6009, '永靖县', 3003, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3008, '622924', 6012, 6011, '广河县', 3003, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3009, '622925', 6014, 6013, '和政县', 3003, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3010, '622926', 6016, 6015, '东乡族自治县', 3003, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3011, '622927', 6018, 6017, '积石山保安族东乡族撒拉族自治县', 3003, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3012, '623000', 6037, 6020, '甘南藏族自治州', 2920, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3013, '623001', 6022, 6021, '合作市', 3012, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3014, '623021', 6024, 6023, '临潭县', 3012, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3015, '623022', 6026, 6025, '卓尼县', 3012, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3016, '623023', 6028, 6027, '舟曲县', 3012, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3017, '623024', 6030, 6029, '迭部县', 3012, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3018, '623025', 6032, 6031, '玛曲县', 3012, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3019, '623026', 6034, 6033, '碌曲县', 3012, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3020, '623027', 6036, 6035, '夏河县', 3012, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3021, '630000', 6144, 6039, '青海省', 2920, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3022, '630100', 6055, 6040, '西宁市', 3021, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3023, '630102', 6042, 6041, '城东区', 3022, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3024, '630103', 6044, 6043, '城中区', 3022, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3025, '630104', 6046, 6045, '城西区', 3022, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3026, '630105', 6048, 6047, '城北区', 3022, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3027, '630121', 6050, 6049, '大通回族土族自治县', 3022, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3028, '630122', 6052, 6051, '湟中县', 3022, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3029, '630123', 6054, 6053, '湟源县', 3022, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3030, '630200', 6069, 6056, '海东市', 3021, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3031, '630202', 6058, 6057, '乐都区', 3030, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3032, '630203', 6060, 6059, '平安区', 3030, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3033, '630222', 6062, 6061, '民和回族土族自治县', 3030, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3034, '630223', 6064, 6063, '互助土族自治县', 3030, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3035, '630224', 6066, 6065, '化隆回族自治县', 3030, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3036, '630225', 6068, 6067, '循化撒拉族自治县', 3030, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3037, '632200', 6079, 6070, '海北藏族自治州', 3021, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3038, '632221', 6072, 6071, '门源回族自治县', 3037, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3039, '632222', 6074, 6073, '祁连县', 3037, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3040, '632223', 6076, 6075, '海晏县', 3037, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3041, '632224', 6078, 6077, '刚察县', 3037, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3042, '632300', 6089, 6080, '黄南藏族自治州', 3021, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3043, '632321', 6082, 6081, '同仁县', 3042, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3044, '632322', 6084, 6083, '尖扎县', 3042, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3045, '632323', 6086, 6085, '泽库县', 3042, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3046, '632324', 6088, 6087, '河南蒙古族自治县', 3042, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3047, '632500', 6101, 6090, '海南藏族自治州', 3021, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3048, '632521', 6092, 6091, '共和县', 3047, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3049, '632522', 6094, 6093, '同德县', 3047, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3050, '632523', 6096, 6095, '贵德县', 3047, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3051, '632524', 6098, 6097, '兴海县', 3047, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3052, '632525', 6100, 6099, '贵南县', 3047, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3053, '632600', 6115, 6102, '果洛藏族自治州', 3021, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3054, '632621', 6104, 6103, '玛沁县', 3053, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3055, '632622', 6106, 6105, '班玛县', 3053, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3056, '632623', 6108, 6107, '甘德县', 3053, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3057, '632624', 6110, 6109, '达日县', 3053, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3058, '632625', 6112, 6111, '久治县', 3053, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3059, '632626', 6114, 6113, '玛多县', 3053, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3060, '632700', 6129, 6116, '玉树藏族自治州', 3021, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3061, '632701', 6118, 6117, '玉树市', 3060, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3062, '632722', 6120, 6119, '杂多县', 3060, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3063, '632723', 6122, 6121, '称多县', 3060, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3064, '632724', 6124, 6123, '治多县', 3060, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3065, '632725', 6126, 6125, '囊谦县', 3060, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3066, '632726', 6128, 6127, '曲麻莱县', 3060, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3067, '632800', 6143, 6130, '海西蒙古族藏族自治州', 3021, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3068, '632801', 6132, 6131, '格尔木市', 3067, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3069, '632802', 6134, 6133, '德令哈市', 3067, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3070, '632803', 6136, 6135, '茫崖市', 3067, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3071, '632821', 6138, 6137, '乌兰县', 3067, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3072, '632822', 6140, 6139, '都兰县', 3067, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3073, '632823', 6142, 6141, '天峻县', 3067, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3074, '640000', 6200, 6145, '宁夏回族自治区', 3021, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3075, '640100', 6159, 6146, '银川市', 3074, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3076, '640104', 6148, 6147, '兴庆区', 3075, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3077, '640105', 6150, 6149, '西夏区', 3075, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3078, '640106', 6152, 6151, '金凤区', 3075, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3079, '640121', 6154, 6153, '永宁县', 3075, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3080, '640122', 6156, 6155, '贺兰县', 3075, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3081, '640181', 6158, 6157, '灵武市', 3075, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3082, '640200', 6167, 6160, '石嘴山市', 3074, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3083, '640202', 6162, 6161, '大武口区', 3082, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3084, '640205', 6164, 6163, '惠农区', 3082, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3085, '640221', 6166, 6165, '平罗县', 3082, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3086, '640300', 6179, 6168, '吴忠市', 3074, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3087, '640302', 6170, 6169, '利通区', 3086, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3088, '640303', 6172, 6171, '红寺堡区', 3086, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3089, '640323', 6174, 6173, '盐池县', 3086, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3090, '640324', 6176, 6175, '同心县', 3086, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3091, '640381', 6178, 6177, '青铜峡市', 3086, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3092, '640400', 6191, 6180, '固原市', 3074, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3093, '640402', 6182, 6181, '原州区', 3092, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3094, '640422', 6184, 6183, '西吉县', 3092, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3095, '640423', 6186, 6185, '隆德县', 3092, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3096, '640424', 6188, 6187, '泾源县', 3092, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3097, '640425', 6190, 6189, '彭阳县', 3092, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3098, '640500', 6199, 6192, '中卫市', 3074, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3099, '640502', 6194, 6193, '沙坡头区', 3098, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3100, '640521', 6196, 6195, '中宁县', 3098, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3101, '640522', 6198, 6197, '海原县', 3098, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3102, '650000', 6440, 6201, '新疆维吾尔自治区', 3074, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3103, '650100', 6219, 6202, '乌鲁木齐市', 3102, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3104, '650102', 6204, 6203, '天山区', 3103, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3105, '650103', 6206, 6205, '沙依巴克区', 3103, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3106, '650104', 6208, 6207, '新市区', 3103, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3107, '650105', 6210, 6209, '水磨沟区', 3103, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3108, '650106', 6212, 6211, '头屯河区', 3103, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3109, '650107', 6214, 6213, '达坂城区', 3103, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3110, '650109', 6216, 6215, '米东区', 3103, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3111, '650121', 6218, 6217, '乌鲁木齐县', 3103, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3112, '650200', 6229, 6220, '克拉玛依市', 3102, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3113, '650202', 6222, 6221, '独山子区', 3112, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3114, '650203', 6224, 6223, '克拉玛依区', 3112, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3115, '650204', 6226, 6225, '白碱滩区', 3112, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3116, '650205', 6228, 6227, '乌尔禾区', 3112, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3117, '650400', 6237, 6230, '吐鲁番市', 3102, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3118, '650402', 6232, 6231, '高昌区', 3117, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3119, '650421', 6234, 6233, '鄯善县', 3117, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3120, '650422', 6236, 6235, '托克逊县', 3117, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3121, '650500', 6245, 6238, '哈密市', 3102, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3122, '650502', 6240, 6239, '伊州区', 3121, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3123, '650521', 6242, 6241, '巴里坤哈萨克自治县', 3121, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3124, '650522', 6244, 6243, '伊吾县', 3121, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3125, '652300', 6261, 6246, '昌吉回族自治州', 3102, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3126, '652301', 6248, 6247, '昌吉市', 3125, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3127, '652302', 6250, 6249, '阜康市', 3125, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3128, '652323', 6252, 6251, '呼图壁县', 3125, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3129, '652324', 6254, 6253, '玛纳斯县', 3125, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3130, '652325', 6256, 6255, '奇台县', 3125, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3131, '652327', 6258, 6257, '吉木萨尔县', 3125, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3132, '652328', 6260, 6259, '木垒哈萨克自治县', 3125, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3133, '652700', 6271, 6262, '博尔塔拉蒙古自治州', 3102, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3134, '652701', 6264, 6263, '博乐市', 3133, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3135, '652702', 6266, 6265, '阿拉山口市', 3133, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3136, '652722', 6268, 6267, '精河县', 3133, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3137, '652723', 6270, 6269, '温泉县', 3133, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3138, '652800', 6291, 6272, '巴音郭楞蒙古自治州', 3102, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3139, '652801', 6274, 6273, '库尔勒市', 3138, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3140, '652822', 6276, 6275, '轮台县', 3138, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3141, '652823', 6278, 6277, '尉犁县', 3138, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3142, '652824', 6280, 6279, '若羌县', 3138, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3143, '652825', 6282, 6281, '且末县', 3138, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3144, '652826', 6284, 6283, '焉耆回族自治县', 3138, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3145, '652827', 6286, 6285, '和静县', 3138, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3146, '652828', 6288, 6287, '和硕县', 3138, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3147, '652829', 6290, 6289, '博湖县', 3138, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3148, '652900', 6311, 6292, '阿克苏地区', 3102, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3149, '652901', 6294, 6293, '阿克苏市', 3148, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3150, '652922', 6296, 6295, '温宿县', 3148, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3151, '652923', 6298, 6297, '库车县', 3148, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3152, '652924', 6300, 6299, '沙雅县', 3148, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3153, '652925', 6302, 6301, '新和县', 3148, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3154, '652926', 6304, 6303, '拜城县', 3148, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3155, '652927', 6306, 6305, '乌什县', 3148, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3156, '652928', 6308, 6307, '阿瓦提县', 3148, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3157, '652929', 6310, 6309, '柯坪县', 3148, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3158, '653000', 6321, 6312, '克孜勒苏柯尔克孜自治州', 3102, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3159, '653001', 6314, 6313, '阿图什市', 3158, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3160, '653022', 6316, 6315, '阿克陶县', 3158, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3161, '653023', 6318, 6317, '阿合奇县', 3158, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3162, '653024', 6320, 6319, '乌恰县', 3158, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3163, '653100', 6347, 6322, '喀什地区', 3102, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3164, '653101', 6324, 6323, '喀什市', 3163, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3165, '653121', 6326, 6325, '疏附县', 3163, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3166, '653122', 6328, 6327, '疏勒县', 3163, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3167, '653123', 6330, 6329, '英吉沙县', 3163, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3168, '653124', 6332, 6331, '泽普县', 3163, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3169, '653125', 6334, 6333, '莎车县', 3163, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3170, '653126', 6336, 6335, '叶城县', 3163, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3171, '653127', 6338, 6337, '麦盖提县', 3163, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3172, '653128', 6340, 6339, '岳普湖县', 3163, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3173, '653129', 6342, 6341, '伽师县', 3163, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3174, '653130', 6344, 6343, '巴楚县', 3163, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3175, '653131', 6346, 6345, '塔什库尔干塔吉克自治县', 3163, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3176, '653200', 6365, 6348, '和田地区', 3102, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3177, '653201', 6350, 6349, '和田市', 3176, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3178, '653221', 6352, 6351, '和田县', 3176, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3179, '653222', 6354, 6353, '墨玉县', 3176, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3180, '653223', 6356, 6355, '皮山县', 3176, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3181, '653224', 6358, 6357, '洛浦县', 3176, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3182, '653225', 6360, 6359, '策勒县', 3176, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3183, '653226', 6362, 6361, '于田县', 3176, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3184, '653227', 6364, 6363, '民丰县', 3176, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3185, '654000', 6389, 6366, '伊犁哈萨克自治州', 3102, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3186, '654002', 6368, 6367, '伊宁市', 3185, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3187, '654003', 6370, 6369, '奎屯市', 3185, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3188, '654004', 6372, 6371, '霍尔果斯市', 3185, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3189, '654021', 6374, 6373, '伊宁县', 3185, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3190, '654022', 6376, 6375, '察布查尔锡伯自治县', 3185, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3191, '654023', 6378, 6377, '霍城县', 3185, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3192, '654024', 6380, 6379, '巩留县', 3185, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3193, '654025', 6382, 6381, '新源县', 3185, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3194, '654026', 6384, 6383, '昭苏县', 3185, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3195, '654027', 6386, 6385, '特克斯县', 3185, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3196, '654028', 6388, 6387, '尼勒克县', 3185, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3197, '654200', 6405, 6390, '塔城地区', 3102, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3198, '654201', 6392, 6391, '塔城市', 3197, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3199, '654202', 6394, 6393, '乌苏市', 3197, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3200, '654221', 6396, 6395, '额敏县', 3197, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3201, '654223', 6398, 6397, '沙湾县', 3197, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3202, '654224', 6400, 6399, '托里县', 3197, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3203, '654225', 6402, 6401, '裕民县', 3197, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3204, '654226', 6404, 6403, '和布克赛尔蒙古自治县', 3197, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3205, '654300', 6439, 6406, '阿勒泰地区', 3102, 2, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3206, '654301', 6408, 6407, '阿勒泰市', 3205, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3207, '654321', 6410, 6409, '布尔津县', 3205, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3208, '654322', 6412, 6411, '富蕴县', 3205, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3209, '654323', 6414, 6413, '福海县', 3205, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3210, '654324', 6416, 6415, '哈巴河县', 3205, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3211, '654325', 6418, 6417, '青河县', 3205, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3212, '654326', 6420, 6419, '吉木乃县', 3205, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3213, '659001', 6422, 6421, '石河子市', 3205, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3214, '659002', 6424, 6423, '阿拉尔市', 3205, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3215, '659003', 6426, 6425, '图木舒克市', 3205, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3216, '659004', 6428, 6427, '五家渠市', 3205, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3217, '659005', 6430, 6429, '北屯市', 3205, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3218, '659006', 6432, 6431, '铁门关市', 3205, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3219, '659007', 6434, 6433, '双河市', 3205, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3220, '659008', 6436, 6435, '可克达拉市', 3205, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3221, '659009', 6438, 6437, '昆玉市', 3205, 3, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3222, '710000', 6442, 6441, '台湾省', 3102, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3223, '810000', 6444, 6443, '香港特别行政区', 3222, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');
INSERT INTO `os_area` VALUES (3224, '820000', 6446, 6445, '澳门特别行政区', 3223, 1, '2019-04-21 09:26:40', '2019-04-21 09:26:40');

-- ----------------------------
-- Table structure for os_associate_applicant
-- ----------------------------
DROP TABLE IF EXISTS `os_associate_applicant`;
CREATE TABLE `os_associate_applicant`  (
  `id` int(0) NOT NULL AUTO_INCREMENT COMMENT 'ID',
  `applicantid` int(0) NULL DEFAULT NULL COMMENT '申请人id',
  `mergeid` int(0) NULL DEFAULT NULL COMMENT '合并申请人id',
  `tid` int(0) NULL DEFAULT NULL COMMENT '专题库id',
  PRIMARY KEY (`id`) USING BTREE,
  INDEX `applicantid`(`applicantid`) USING BTREE,
  INDEX `mergeid`(`mergeid`) USING BTREE,
  INDEX `tid`(`tid`) USING BTREE
) ENGINE = InnoDB AUTO_INCREMENT = 735 CHARACTER SET = utf8 COLLATE = utf8_general_ci COMMENT = '合并申请人关联管理表' ROW_FORMAT = Dynamic;

-- ----------------------------
-- Records of os_associate_applicant
-- ----------------------------
INSERT INTO `os_associate_applicant` VALUES (457, 7019, 7071, 80);
INSERT INTO `os_associate_applicant` VALUES (458, 7059, 7071, 80);
INSERT INTO `os_associate_applicant` VALUES (459, 7056, 7071, 80);
INSERT INTO `os_associate_applicant` VALUES (460, 7055, 7071, 80);
INSERT INTO `os_associate_applicant` VALUES (461, 7038, 7071, 80);
INSERT INTO `os_associate_applicant` VALUES (462, 7041, 7071, 80);
INSERT INTO `os_associate_applicant` VALUES (463, 7061, 7071, 80);
INSERT INTO `os_associate_applicant` VALUES (464, 7062, 7071, 80);
INSERT INTO `os_associate_applicant` VALUES (465, 7068, 7072, 80);
INSERT INTO `os_associate_applicant` VALUES (466, 7067, 7072, 80);
INSERT INTO `os_associate_applicant` VALUES (467, 6999, 7073, 80);
INSERT INTO `os_associate_applicant` VALUES (468, 6993, 7073, 80);
INSERT INTO `os_associate_applicant` VALUES (469, 7000, 7073, 80);
INSERT INTO `os_associate_applicant` VALUES (470, 6996, 7073, 80);
INSERT INTO `os_associate_applicant` VALUES (471, 6997, 7073, 80);
INSERT INTO `os_associate_applicant` VALUES (472, 7001, 7073, 80);
INSERT INTO `os_associate_applicant` VALUES (473, 7002, 7073, 80);
INSERT INTO `os_associate_applicant` VALUES (474, 7006, 7073, 80);
INSERT INTO `os_associate_applicant` VALUES (475, 7009, 7073, 80);
INSERT INTO `os_associate_applicant` VALUES (476, 7022, 7073, 80);
INSERT INTO `os_associate_applicant` VALUES (477, 7021, 7073, 80);
INSERT INTO `os_associate_applicant` VALUES (478, 7025, 7073, 80);
INSERT INTO `os_associate_applicant` VALUES (479, 7026, 7073, 80);
INSERT INTO `os_associate_applicant` VALUES (480, 7032, 7073, 80);
INSERT INTO `os_associate_applicant` VALUES (481, 6999, 7074, 80);
INSERT INTO `os_associate_applicant` VALUES (482, 6994, 7074, 80);
INSERT INTO `os_associate_applicant` VALUES (483, 6995, 7074, 80);
INSERT INTO `os_associate_applicant` VALUES (484, 7003, 7074, 80);
INSERT INTO `os_associate_applicant` VALUES (485, 7004, 7074, 80);
INSERT INTO `os_associate_applicant` VALUES (486, 6998, 7074, 80);
INSERT INTO `os_associate_applicant` VALUES (487, 7007, 7074, 80);
INSERT INTO `os_associate_applicant` VALUES (621, 7083, 7125, 83);
INSERT INTO `os_associate_applicant` VALUES (622, 7084, 7125, 83);
INSERT INTO `os_associate_applicant` VALUES (623, 7085, 7125, 83);
INSERT INTO `os_associate_applicant` VALUES (624, 7086, 7125, 83);
INSERT INTO `os_associate_applicant` VALUES (625, 7087, 7125, 83);
INSERT INTO `os_associate_applicant` VALUES (626, 7088, 7125, 83);
INSERT INTO `os_associate_applicant` VALUES (627, 7085, 7126, 83);
INSERT INTO `os_associate_applicant` VALUES (628, 7086, 7126, 83);
INSERT INTO `os_associate_applicant` VALUES (629, 7087, 7126, 83);
INSERT INTO `os_associate_applicant` VALUES (630, 7088, 7126, 83);
INSERT INTO `os_associate_applicant` VALUES (631, 7089, 7126, 83);
INSERT INTO `os_associate_applicant` VALUES (632, 7090, 7126, 83);
INSERT INTO `os_associate_applicant` VALUES (633, 7091, 7126, 83);
INSERT INTO `os_associate_applicant` VALUES (634, 7083, 7127, 83);
INSERT INTO `os_associate_applicant` VALUES (635, 7084, 7127, 83);
INSERT INTO `os_associate_applicant` VALUES (636, 7085, 7127, 83);
INSERT INTO `os_associate_applicant` VALUES (637, 7086, 7127, 83);
INSERT INTO `os_associate_applicant` VALUES (638, 7087, 7127, 83);
INSERT INTO `os_associate_applicant` VALUES (639, 7088, 7127, 83);
INSERT INTO `os_associate_applicant` VALUES (640, 7089, 7127, 83);
INSERT INTO `os_associate_applicant` VALUES (641, 7090, 7127, 83);
INSERT INTO `os_associate_applicant` VALUES (642, 7091, 7127, 83);

-- ----------------------------
-- Table structure for os_branch
-- ----------------------------
DROP TABLE IF EXISTS `os_branch`;
CREATE TABLE `os_branch`  (
  `id` int(0) NOT NULL AUTO_INCREMENT COMMENT 'ID',
  `name` varchar(60) CHARACTER SET utf8 COLLATE utf8_general_ci NOT NULL COMMENT '部门名称',
  `pid` int(0) NOT NULL COMMENT '父id',
  `status` int(0) NOT NULL DEFAULT 1 COMMENT '状态',
  `sort` int(0) NOT NULL DEFAULT 0 COMMENT '排序',
  `remark` varchar(120) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '备注',
  PRIMARY KEY (`id`) USING BTREE
) ENGINE = InnoDB AUTO_INCREMENT = 31 CHARACTER SET = utf8 COLLATE = utf8_general_ci COMMENT = '后台部门表' ROW_FORMAT = Dynamic;

-- ----------------------------
-- Table structure for os_client
-- ----------------------------
DROP TABLE IF EXISTS `os_client`;
CREATE TABLE `os_client`  (
  `id` int(0) UNSIGNED NOT NULL AUTO_INCREMENT COMMENT 'ID',
  `name` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NOT NULL DEFAULT '' COMMENT '委托方名称',
  `create_id` int(0) NOT NULL DEFAULT 1 COMMENT '创建者id',
  `status` int(0) NOT NULL DEFAULT 1 COMMENT '1是开启,0是关闭',
  `remark` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '备注',
  `ctime` int(0) NOT NULL DEFAULT 0 COMMENT '创建时间',
  `create_time` varchar(25) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL,
  PRIMARY KEY (`id`) USING BTREE
) ENGINE = InnoDB AUTO_INCREMENT = 49 CHARACTER SET = utf8 COLLATE = utf8_general_ci COMMENT = '委托方表' ROW_FORMAT = Dynamic;

-- ----------------------------
-- Records of os_client
-- ----------------------------
INSERT INTO `os_client` VALUES (33, '安徽省瀚海新材料股份有限公司', 1, 1, NULL, 1651916924, NULL);
INSERT INTO `os_client` VALUES (34, '威世博', 1, 1, NULL, 1652136335, NULL);
INSERT INTO `os_client` VALUES (35, '11', 1, 1, NULL, 1652248075, NULL);
INSERT INTO `os_client` VALUES (36, '22', 1, 1, NULL, 1652248626, NULL);
INSERT INTO `os_client` VALUES (37, '1', 1, 1, NULL, 1652249060, NULL);
INSERT INTO `os_client` VALUES (38, '2', 1, 1, NULL, 1652249077, NULL);
INSERT INTO `os_client` VALUES (39, '12312312', 1, 1, NULL, 1652742868, NULL);
INSERT INTO `os_client` VALUES (40, '123123123123', 1, 1, NULL, 1652742924, NULL);
INSERT INTO `os_client` VALUES (41, '委托方', 1, 1, NULL, 1653884815, NULL);
INSERT INTO `os_client` VALUES (42, '3', 1, 1, NULL, 1654480436, NULL);
INSERT INTO `os_client` VALUES (43, '4', 1, 1, NULL, 1654480440, NULL);
INSERT INTO `os_client` VALUES (44, '5', 1, 1, NULL, 1654480444, NULL);
INSERT INTO `os_client` VALUES (45, '6', 1, 1, NULL, 1654480449, NULL);
INSERT INTO `os_client` VALUES (46, '7', 1, 1, NULL, 1654480452, NULL);
INSERT INTO `os_client` VALUES (47, '8', 1, 1, NULL, 1654480456, NULL);
INSERT INTO `os_client` VALUES (48, '9', 1, 1, NULL, 1654480460, NULL);

-- ----------------------------
-- Table structure for os_custom_analysis_item
-- ----------------------------
DROP TABLE IF EXISTS `os_custom_analysis_item`;
CREATE TABLE `os_custom_analysis_item`  (
  `id` int(0) UNSIGNED NOT NULL AUTO_INCREMENT COMMENT 'ID',
  `uid` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT 'UID',
  `name` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '名称',
  `parent_id` int(0) NULL DEFAULT 0 COMMENT '父节点',
  `permissions` int(0) NULL DEFAULT NULL COMMENT '可见类型',
  `project_id` int(0) NULL DEFAULT NULL COMMENT '专题库ID',
  `sort` int(0) NULL DEFAULT NULL COMMENT '排序',
  `type` int(0) NULL DEFAULT NULL COMMENT '类型',
  `remark` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '备注',
  `create_by` int(0) NULL DEFAULT NULL COMMENT '创建者',
  `status` int(0) NULL DEFAULT 1 COMMENT '状态',
  `create_time` datetime(0) NULL DEFAULT NULL COMMENT '创建时间',
  `update_time` datetime(0) NULL DEFAULT NULL COMMENT '更新时间',
  PRIMARY KEY (`id`) USING BTREE
) ENGINE = InnoDB AUTO_INCREMENT = 240 CHARACTER SET = utf8mb4 COLLATE = utf8mb4_general_ci COMMENT = '自定义分析项目' ROW_FORMAT = Dynamic;

-- ----------------------------
-- Records of os_custom_analysis_item
-- ----------------------------
INSERT INTO `os_custom_analysis_item` VALUES (234, 'b407f11f111642f5b12557be90617e39', '11', 0, 2, 83, 1, 0, NULL, 1, 1, '2022-05-14 16:27:59', '2022-05-14 16:27:59');
INSERT INTO `os_custom_analysis_item` VALUES (235, '2b990d4a043343bbb43a95c30a6c71fb', '22222', 234, 2, 80, 0, 1, NULL, 1, 1, '2022-05-14 16:27:59', '2022-05-18 13:56:29');
INSERT INTO `os_custom_analysis_item` VALUES (236, '274fac3fa1c44c75b2491e3e94c59af9', '22', 234, 2, 80, 0, 1, NULL, 1, 1, '2022-05-16 10:04:00', '2022-05-18 07:01:35');
INSERT INTO `os_custom_analysis_item` VALUES (237, '07c2699385c149c48a888387092ddcc0', '333', 234, 2, 80, 0, 1, NULL, 1, 1, '2022-05-17 13:14:33', '2022-05-17 14:27:12');
INSERT INTO `os_custom_analysis_item` VALUES (238, '73c0d5af055e45d9abbd6db573017291', '22222s', 234, 2, 80, 0, 1, NULL, 1, 1, '2022-05-18 09:37:07', '2022-05-18 09:37:07');
INSERT INTO `os_custom_analysis_item` VALUES (239, '6715d98eca65498191a28c88ae191c89', '2277', 234, 2, 80, 0, 1, NULL, 1, 1, '2022-05-23 10:36:45', '2022-05-23 10:36:45');

-- ----------------------------
-- Table structure for os_custom_analysis_item_schema
-- ----------------------------
DROP TABLE IF EXISTS `os_custom_analysis_item_schema`;
CREATE TABLE `os_custom_analysis_item_schema`  (
  `id` int(0) UNSIGNED NOT NULL AUTO_INCREMENT COMMENT 'ID',
  `uid` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT 'UID',
  `dimension` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '维度',
  `field` int(0) NULL DEFAULT 0 COMMENT '选项字段',
  `expand` int(0) NULL DEFAULT 0 COMMENT '拓展字段',
  `type` int(0) NULL DEFAULT 0 COMMENT '类型',
  `ptype` int(0) NULL DEFAULT 0 COMMENT '类型',
  `num` int(0) NULL DEFAULT NULL COMMENT '数量',
  `create_by` int(0) NULL DEFAULT NULL COMMENT '创建者',
  `status` int(0) NULL DEFAULT 1 COMMENT '状态',
  `create_time` datetime(0) NULL DEFAULT NULL COMMENT '创建时间',
  `update_time` datetime(0) NULL DEFAULT NULL COMMENT '更新时间',
  PRIMARY KEY (`id`) USING BTREE
) ENGINE = InnoDB AUTO_INCREMENT = 343 CHARACTER SET = utf8mb4 COLLATE = utf8mb4_general_ci COMMENT = '自定义分析项目维度数据' ROW_FORMAT = Dynamic;

-- ----------------------------
-- Records of os_custom_analysis_item_schema
-- ----------------------------
INSERT INTO `os_custom_analysis_item_schema` VALUES (333, '2b990d4a043343bbb43a95c30a6c71fb', 'x', 18, 6, 91, 1, 10, 1, 1, '2022-05-14 16:27:59', '2022-05-18 13:56:29');
INSERT INTO `os_custom_analysis_item_schema` VALUES (334, '2b990d4a043343bbb43a95c30a6c71fb', 'y', 0, 0, 0, 0, 10, 1, 1, '2022-05-14 16:27:59', '2022-05-18 13:56:29');
INSERT INTO `os_custom_analysis_item_schema` VALUES (335, '274fac3fa1c44c75b2491e3e94c59af9', 'x', 26, 12, 92, 2, 10, 1, 1, '2022-05-16 10:04:00', '2022-05-18 07:01:35');
INSERT INTO `os_custom_analysis_item_schema` VALUES (336, '274fac3fa1c44c75b2491e3e94c59af9', 'y', 13, 1, 90, 1, 50, 1, 1, '2022-05-16 10:04:00', '2022-05-18 07:01:35');
INSERT INTO `os_custom_analysis_item_schema` VALUES (337, '07c2699385c149c48a888387092ddcc0', 'x', 26, 13, 92, 2, 10, 1, 1, '2022-05-17 13:14:33', '2022-05-17 14:27:12');
INSERT INTO `os_custom_analysis_item_schema` VALUES (338, '07c2699385c149c48a888387092ddcc0', 'y', 0, 0, 0, 0, 10, 1, 1, '2022-05-17 13:14:33', '2022-05-17 14:27:12');
INSERT INTO `os_custom_analysis_item_schema` VALUES (339, '73c0d5af055e45d9abbd6db573017291', 'x', 18, 6, 91, 1, 10, 1, 1, '2022-05-18 09:37:07', '2022-05-18 09:37:07');
INSERT INTO `os_custom_analysis_item_schema` VALUES (340, '73c0d5af055e45d9abbd6db573017291', 'y', 0, 0, 0, 0, 10, 1, 1, '2022-05-18 09:37:07', '2022-05-18 09:37:07');
INSERT INTO `os_custom_analysis_item_schema` VALUES (341, '6715d98eca65498191a28c88ae191c89', 'x', 26, 12, 92, 2, 10, 1, 1, '2022-05-23 10:36:45', '2022-05-23 10:36:45');
INSERT INTO `os_custom_analysis_item_schema` VALUES (342, '6715d98eca65498191a28c88ae191c89', 'y', 13, 1, 90, 1, 50, 1, 1, '2022-05-23 10:36:45', '2022-05-23 10:36:45');

-- ----------------------------
-- Table structure for os_custom_analysis_item_setting
-- ----------------------------
DROP TABLE IF EXISTS `os_custom_analysis_item_setting`;
CREATE TABLE `os_custom_analysis_item_setting`  (
  `id` int(0) UNSIGNED NOT NULL AUTO_INCREMENT COMMENT 'ID',
  `uid` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT 'UID',
  `type` int(0) NULL DEFAULT NULL COMMENT '基础类型',
  `show_type` int(0) NULL DEFAULT NULL COMMENT '显示类型',
  `table_type` int(0) NULL DEFAULT NULL COMMENT '表格类型',
  `theme` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '图片主题',
  `title1` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT 'x轴标题',
  `title2` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT 'y轴标题',
  `data_label` tinyint(0) NULL DEFAULT NULL COMMENT '数据标签是否显示',
  `data_position` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '数据标签显示位置',
  `data_size` int(0) NULL DEFAULT NULL COMMENT '数据标签字体大小',
  `title_size` int(0) NULL DEFAULT NULL COMMENT 'xy轴标题字体大小',
  `axis_size` int(0) NULL DEFAULT NULL COMMENT 'xy轴字体大小',
  `title1_dir` int(0) NULL DEFAULT NULL COMMENT 'x轴字体方向',
  `table_config` longtext CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL COMMENT '表格配置',
  `line_config` longtext CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL COMMENT '辅助线配置',
  `font_family` longtext CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL COMMENT '字体',
  `create_by` int(0) NULL DEFAULT NULL COMMENT '创建者',
  `status` int(0) NULL DEFAULT 1 COMMENT '状态',
  `create_time` datetime(0) NULL DEFAULT NULL COMMENT '创建时间',
  `update_time` datetime(0) NULL DEFAULT NULL COMMENT '更新时间',
  `font_weight` tinyint(0) NULL DEFAULT NULL COMMENT '字体加粗',
  `name_location` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '标题位置',
  `font_weight2` tinyint(0) NULL DEFAULT NULL COMMENT '字体加粗',
  `width` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '宽',
  `height` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '高',
  `width_unit` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '宽单位',
  `height_unit` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '高单位',
  `split_line` tinyint(0) NULL DEFAULT NULL COMMENT '背景线',
  `split_line2` tinyint(0) NULL DEFAULT NULL COMMENT '背景线',
  `legend` tinyint(0) NULL DEFAULT NULL COMMENT '图例',
  `grid_top` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '距离',
  `grid_left` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '距离',
  `grid_right` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '距离',
  `grid_bottom` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '距离',
  `font_family2` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '字体',
  `label_color` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '标签颜色',
  `legend_location` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '图例位置',
  `font_family3` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '字体',
  `legend_font_size` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '图例大小',
  `legend_color` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '图例颜色',
  `font_family4` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '字体',
  `font_size` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '字体大小',
  `font_size2` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '字体大小',
  `font_color` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '字体颜色',
  `font_color2` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '字体颜色',
  `show` tinyint(0) NULL DEFAULT NULL COMMENT '显示',
  `show2` tinyint(0) NULL DEFAULT NULL COMMENT '显示',
  `name_location2` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '标题位置',
  `interval` tinyint(0) NULL DEFAULT NULL COMMENT '间隔',
  `rotate` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '旋转',
  `interval2` tinyint(0) NULL DEFAULT NULL COMMENT '间隔',
  `rotate2` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '旋转',
  `padding_top` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '距离',
  `padding_top2` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '距离',
  `padding_right` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '距离',
  `padding_right2` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '距离',
  `padding_bottom` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '距离',
  `padding_bottom2` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '距离',
  `padding_left` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '距离',
  `padding_left2` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '距离',
  `type2` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '类型',
  `data_label2` tinyint(0) NULL DEFAULT NULL COMMENT '字体大小',
  `data_label3` tinyint(0) NULL DEFAULT NULL COMMENT '字体大小',
  `bar_width` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '柱状图宽度',
  `scatter_size` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '气泡图比例',
  PRIMARY KEY (`id`) USING BTREE
) ENGINE = InnoDB AUTO_INCREMENT = 180 CHARACTER SET = utf8mb4 COLLATE = utf8mb4_general_ci COMMENT = '自定义分析项目图表设置' ROW_FORMAT = Dynamic;

-- ----------------------------
-- Records of os_custom_analysis_item_setting
-- ----------------------------
INSERT INTO `os_custom_analysis_item_setting` VALUES (175, '2b990d4a043343bbb43a95c30a6c71fb', 4, 0, 0, 'customed', '申请人-当前-前10个', '测试测试测试', 1, '', 13, 14, 14, 1, '[{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0}]', '{\"name\":\"\",\"operator\":0,\"enable\":false}', 'Microsoft YaHei', 1, 1, '2022-05-18 13:56:29', '2022-05-18 13:56:29', 0, 'middle', 0, '100', '650', '%', 'px', 0, 1, 1, '3', '3', '10', '0', 'sans-serif', '#DA1919', 'top', 'sans-serif', '13', '#000000', 'sans-serif', '13', '13', '#000000', '#000000', 1, 1, 'middle', 1, '30', 1, '0', '80', '30', '0', '0', '0', '30', '0', '0', 'scroll', 0, 0, NULL, NULL);
INSERT INTO `os_custom_analysis_item_setting` VALUES (176, '274fac3fa1c44c75b2491e3e94c59af9', 13, 0, 0, 'customed', '公开日-年-前10个', 'IPC分类号-部-前50个', 1, '', 14, 14, 14, 1, '[{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0}]', '{\"name\":\"\",\"operator\":0,\"enable\":false}', 'Microsoft YaHei', 1, 1, '2022-05-18 07:01:35', '2022-05-18 07:01:35', 0, 'end', 0, '100', '650', '%', 'px', 0, 1, 1, '0', '0', '15', '0', 'sans-serif', '#000000', 'top', 'sans-serif', '13', '#000000', 'sans-serif', '13', '13', '#000000', '#000000', 1, 1, 'end', 1, '0', 1, '0', '0', '0', '0', '0', '0', '0', '0', '0', 'scroll', NULL, NULL, NULL, NULL);
INSERT INTO `os_custom_analysis_item_setting` VALUES (177, '07c2699385c149c48a888387092ddcc0', 4, 0, 0, 'customed', '公开日-2年-前10个', '测试测试测试', 1, 'top', 10, 14, 14, 1, '[{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0}]', '{\"name\":\"\",\"operator\":0,\"enable\":false}', 'Microsoft YaHei', 1, 1, '2022-05-17 14:27:12', '2022-05-17 14:27:12', 0, 'middle', 0, '100', '650', '%', 'px', 0, 1, 1, '3', '3', '10', '0', 'sans-serif', '#DA1919', 'top', 'sans-serif', '13', '#000000', 'sans-serif', '13', '13', '#000000', '#000000', 1, 1, 'middle', 1, '30', 1, '0', '80', '30', '0', '0', '0', '30', '0', '0', NULL, NULL, NULL, NULL, NULL);
INSERT INTO `os_custom_analysis_item_setting` VALUES (178, '73c0d5af055e45d9abbd6db573017291', 4, 0, 0, 'customed', '申请人-当前-前10个', '测试测试测试', 1, 'top', 10, 14, 14, 1, '[{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0}]', '{\"name\":\"\",\"operator\":0,\"enable\":false}', 'Microsoft YaHei', 1, 1, '2022-05-18 09:37:07', '2022-05-18 09:37:07', 0, 'middle', 0, '100', '650', '%', 'px', 0, 1, 1, '3', '3', '10', '0', 'sans-serif', '#DA1919', 'top', 'sans-serif', '13', '#000000', 'sans-serif', '13', '13', '#000000', '#000000', 1, 1, 'middle', 1, '30', 1, '0', '80', '30', '0', '0', '0', '30', '0', '0', 'scroll', NULL, NULL, NULL, NULL);
INSERT INTO `os_custom_analysis_item_setting` VALUES (179, '6715d98eca65498191a28c88ae191c89', 15, 0, 0, 'customed', '公开日-年-前10个', 'IPC分类号-部-前10个', 1, '', 14, 14, 14, 1, '[{\"min\":10,\"max\":20,\"color\":\"#E30F0F\"},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0},{\"min\":0,\"max\":0}]', '{\"name\":\"\",\"operator\":0,\"enable\":false}', 'Microsoft YaHei', 1, 1, '2022-05-23 10:36:45', '2022-05-23 10:36:45', 1, 'end', 0, '100', '650', '%', 'px', 0, 1, 1, '0', '0', '15', '0', 'sans-serif', '#000000', 'top', 'sans-serif', '13', '#000000', 'sans-serif', '13', '13', '#EE0000', '#000000', 1, 1, 'end', 1, '0', 1, '0', '0', '0', '0', '0', '0', '0', '0', '0', 'scroll', 0, 0, '', '0');

-- ----------------------------
-- Table structure for os_custom_analysis_item_source
-- ----------------------------
DROP TABLE IF EXISTS `os_custom_analysis_item_source`;
CREATE TABLE `os_custom_analysis_item_source`  (
  `id` int(0) UNSIGNED NOT NULL AUTO_INCREMENT COMMENT 'ID',
  `uid` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '分析项UID',
  `dimension` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '维度',
  `name` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '名称',
  `selected` tinyint(1) NULL DEFAULT 0 COMMENT '是否选择',
  `field_id` int(0) NULL DEFAULT 0 COMMENT '字段ID',
  `expand_id` int(0) NULL DEFAULT 0 COMMENT '拓展ID',
  `start_time` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '开始时间',
  `end_time` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '结束时间',
  `min_data` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '大于',
  `max_data` varchar(255) CHARACTER SET utf8mb4 COLLATE utf8mb4_general_ci NULL DEFAULT NULL COMMENT '小于',
  `create_by` int(0) NULL DEFAULT NULL COMMENT '创建者',
  `status` int(0) NULL DEFAULT 1 COMMENT '状态',
  `create_time` datetime(0) NULL DEFAULT NULL COMMENT '创建时间',
  `update_time` datetime(0) NULL DEFAULT NULL COMMENT '更新时间',
  PRIMARY KEY (`id`) USING BTREE,
  INDEX `id`(`id`) USING BTREE,
  INDEX `item_id`(`uid`) USING BTREE,
  INDEX `dimension`(`dimension`) USING BTREE,
  INDEX `field_id`(`dimension`) USING BTREE,
  INDEX `expand_id`(`expand_id`) USING BTREE
) ENGINE = InnoDB AUTO_INCREMENT = 191 CHARACTER SET = utf8mb4 COLLATE = utf8mb4_general_ci COMMENT = '自定义分析项目数据源' ROW_FORMAT = Dynamic;

-- ----------------------------
-- Table structure for os_distribution
-- ----------------------------
DROP TABLE IF EXISTS `os_distribution`;
CREATE TABLE `os_distribution`  (
  `id` int(0) UNSIGNED NOT NULL AUTO_INCREMENT COMMENT 'ID',
  `addtime` int(0) NULL DEFAULT 0 COMMENT '添加时间',
  `email` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT '' COMMENT '邮箱',
  `mobile` varchar(13) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT '0' COMMENT '手机号',
  `name` varchar(60) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT '' COMMENT '姓名',
  `user` varchar(60) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT '' COMMENT '账号',
  `password` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '密码',
  `pwd` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT '',
  `sex` int(0) NOT NULL DEFAULT 1 COMMENT '1男2女',
  `remark` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT '' COMMENT '备注',
  `pid` int(0) NOT NULL DEFAULT 1,
  `ptype` int(0) NOT NULL DEFAULT 2 COMMENT '专题库权限1.有权创建2.无权创建',
  `branchid` int(0) NOT NULL DEFAULT 1 COMMENT '部门ID',
  `last_login_time` varchar(60) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL,
  `last_login_ip` varchar(80) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL,
  `type` int(0) NULL DEFAULT NULL COMMENT '用户类型：1.客户2.内部用户',
  PRIMARY KEY (`id`) USING BTREE
) ENGINE = InnoDB AUTO_INCREMENT = 41 CHARACTER SET = utf8 COLLATE = utf8_general_ci COMMENT = '用户表' ROW_FORMAT = Dynamic;

-- ----------------------------
-- Records of os_distribution
-- ----------------------------
INSERT INTO `os_distribution` VALUES (1, 0, '1054271887@qq.com', '18902245855', '管理员', 'admin', '55138c00ce8b24b58ecf04a23ff1a510', '2ea927b8790cdb8e9e0d4efc6f24390f', 1, '', 1, 1, 1, '', '', 0);
INSERT INTO `os_distribution` VALUES (15, 1642122524, '', '', '黄瑜', 'huangyu', 'e10adc3949ba59abbe56e057f20f883e', '029cb54a3d6ec0b34eb2d46f0ff7e877', 0, '', 1, 1, 10, NULL, NULL, 1);
INSERT INTO `os_distribution` VALUES (16, 1642122570, 'luocaiyang@china-wispro.com', '15850380900', '罗才洋', 'lcy', '6c6902c439862abafc72c69b8cee0777', '029cb54a3d6ec0b34eb2d46f0ff7e877', 1, '', 1, 1, 9, NULL, NULL, 1);
INSERT INTO `os_distribution` VALUES (18, 1642393172, 'heqingwa@china-wispro.com', '13728750292', '何青瓦', 'qwhe', 'e10adc3949ba59abbe56e057f20f883e', '029cb54a3d6ec0b34eb2d46f0ff7e877', 0, '', 1, 1, 8, NULL, NULL, 1);
INSERT INTO `os_distribution` VALUES (20, 1642393287, 'hetingting@china-wispro.com', '18323098418', '何廷亭', 'hetingting', 'e10adc3949ba59abbe56e057f20f883e', '029cb54a3d6ec0b34eb2d46f0ff7e877', 0, '', 1, 1, 27, NULL, NULL, 1);
INSERT INTO `os_distribution` VALUES (21, 1642393342, 'huangjuan-1@china-wispro.com', '15730603660', '黄涓', 'huangjuan-1', 'e10adc3949ba59abbe56e057f20f883e', '029cb54a3d6ec0b34eb2d46f0ff7e877', 0, '', 1, 1, 27, NULL, NULL, 1);
INSERT INTO `os_distribution` VALUES (22, 1642393380, 'lijianyi@china-wispro.com', '13763329681', '黎坚怡', 'lijianyi', 'e10adc3949ba59abbe56e057f20f883e', '029cb54a3d6ec0b34eb2d46f0ff7e877', 0, '', 1, 1, 27, NULL, NULL, 1);
INSERT INTO `os_distribution` VALUES (23, 1642393418, 'shuliya@china-wispro.com', '13662632710', '舒丽亚', 'shuliya', 'e10adc3949ba59abbe56e057f20f883e', '029cb54a3d6ec0b34eb2d46f0ff7e877', 0, '', 1, 1, 27, NULL, NULL, 1);
INSERT INTO `os_distribution` VALUES (24, 1642393462, 'huangyu@china-wispro.com', '13691634962', '黄瑜', 'hyu', 'e10adc3949ba59abbe56e057f20f883e', '029cb54a3d6ec0b34eb2d46f0ff7e877', 0, '', 1, 1, 27, NULL, NULL, 1);
INSERT INTO `os_distribution` VALUES (25, 1642393514, 'qiujunxiao@china-wispro.com', '18566269904', '邱君晓', 'qiujunxiao', 'e10adc3949ba59abbe56e057f20f883e', '029cb54a3d6ec0b34eb2d46f0ff7e877', 1, '', 1, 1, 9, NULL, NULL, 1);
INSERT INTO `os_distribution` VALUES (26, 1642393558, 'liting@china-wispro.com', '18313806245', '李婷', 'liting', 'e10adc3949ba59abbe56e057f20f883e', '029cb54a3d6ec0b34eb2d46f0ff7e877', 0, '', 1, 1, 9, NULL, NULL, 1);
INSERT INTO `os_distribution` VALUES (27, 1642393613, 'wangjianfeng@china-wispro.com', '13926595990', '王建峰', 'wangjianfeng', 'e10adc3949ba59abbe56e057f20f883e', '029cb54a3d6ec0b34eb2d46f0ff7e877', 1, '', 1, 1, 9, NULL, NULL, 1);
INSERT INTO `os_distribution` VALUES (28, 1642393660, 'guanziying@china-wispro.com', '18771078235', '管自英', 'guanziying', 'e10adc3949ba59abbe56e057f20f883e', '029cb54a3d6ec0b34eb2d46f0ff7e877', 0, '', 1, 1, 9, NULL, NULL, 1);
INSERT INTO `os_distribution` VALUES (30, 1642645242, 'jiafengtao@china-wispro.com', '18550037077', '贾凤涛', 'jftao', 'e10adc3949ba59abbe56e057f20f883e', '029cb54a3d6ec0b34eb2d46f0ff7e877', 1, '', 1, 1, 9, NULL, NULL, 1);
INSERT INTO `os_distribution` VALUES (31, 1643057469, '123456@qq.com', '18922254662', '李欣欣', 'huling', 'e10adc3949ba59abbe56e057f20f883e', '2ea927b8790cdb8e9e0d4efc6f24390f', 1, '', 1, 1, 1, NULL, NULL, 1);
INSERT INTO `os_distribution` VALUES (32, 1650497292, '', '0', '用户1', 'user1', 'e10adc3949ba59abbe56e057f20f883e', '', 0, '', 1, 0, 1, NULL, NULL, 1);
INSERT INTO `os_distribution` VALUES (33, 1651133300, 'hushumei@china-wispro.com', '0', '胡淑梅', 'hushumei', 'e10adc3949ba59abbe56e057f20f883e', '', 0, '', 1, 1, 1, NULL, NULL, 1);
INSERT INTO `os_distribution` VALUES (34, 1651196488, 'chenting@china-wispro.com', '0', '陈婷', 'chenting', 'e10adc3949ba59abbe56e057f20f883e', '', 0, '', 1, 1, 1, NULL, NULL, 1);
INSERT INTO `os_distribution` VALUES (35, 1651831721, 'fengweijie@china-wispro.com', '0', '冯玮杰', 'fengweijie', 'e10adc3949ba59abbe56e057f20f883e', '', 1, '', 1, 1, 1, NULL, NULL, 1);
INSERT INTO `os_distribution` VALUES (36, 1651831777, 'sunhuinan@china-wispro.com', '0', '孙慧男', 'sunhuinan', 'e10adc3949ba59abbe56e057f20f883e', '', 1, '', 1, 1, 1, NULL, NULL, 1);
INSERT INTO `os_distribution` VALUES (37, 1651831805, 'panjiahui@china-wispro.com', '0', '潘嘉慧', 'panjiahui', 'e10adc3949ba59abbe56e057f20f883e', '', 0, '', 1, 1, 1, NULL, NULL, 1);
INSERT INTO `os_distribution` VALUES (38, 1651831838, 'luoguangle@china-wispro.com', '0', '罗光乐', 'luoguangl', 'e10adc3949ba59abbe56e057f20f883e', '', 1, '', 1, 1, 1, NULL, NULL, 1);
INSERT INTO `os_distribution` VALUES (39, 1651831861, 'wangling-1@china-wispro.com', '0', '王玲', 'wangling-1', 'e10adc3949ba59abbe56e057f20f883e', '', 0, '', 1, 1, 1, NULL, NULL, 1);
INSERT INTO `os_distribution` VALUES (40, 1651831888, 'chenmengxi@china-wispro.com', '0', '陈梦溪', 'chenmengxi', 'e10adc3949ba59abbe56e057f20f883e', '', 1, '', 1, 1, 1, NULL, NULL, 1);

-- ----------------------------
-- Table structure for os_distribution_doing
-- ----------------------------
DROP TABLE IF EXISTS `os_distribution_doing`;
CREATE TABLE `os_distribution_doing`  (
  `id` int(0) NOT NULL AUTO_INCREMENT COMMENT 'ID',
  `uid` int(0) NOT NULL COMMENT '账号id（userid）',
  `tid` int(0) NULL DEFAULT 0 COMMENT '专题库id',
  `assigned` int(0) NULL DEFAULT 0,
  `completed` int(0) NULL DEFAULT 0,
  `addtime` int(0) NULL DEFAULT 0 COMMENT '添加时间',
  `remark` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '备注',
  `type` int(0) NULL DEFAULT 1 COMMENT '权限 1分类人，2管理员，3查阅人',
  `role` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL,
  PRIMARY KEY (`id`) USING BTREE
) ENGINE = InnoDB AUTO_INCREMENT = 157 CHARACTER SET = utf8 COLLATE = utf8_general_ci COMMENT = '分配表' ROW_FORMAT = Dynamic;

-- ----------------------------
-- Records of os_distribution_doing
-- ----------------------------
INSERT INTO `os_distribution_doing` VALUES (128, 15, 83, 0, 0, 1653272702, NULL, 3, NULL);
INSERT INTO `os_distribution_doing` VALUES (129, 1, 112, 0, 0, 1653884857, NULL, 1, NULL);
INSERT INTO `os_distribution_doing` VALUES (130, 1, 113, 0, 0, 1653884976, NULL, 1, NULL);
INSERT INTO `os_distribution_doing` VALUES (156, 1, 128, 0, 0, 1654732002, NULL, 1, NULL);

-- ----------------------------
-- Table structure for os_international_numble
-- ----------------------------
DROP TABLE IF EXISTS `os_international_numble`;
CREATE TABLE `os_international_numble`  (
  `id` int(0) UNSIGNED NOT NULL AUTO_INCREMENT COMMENT 'ID',
  `code` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT '' COMMENT '分类号',
  `type` tinyint(1) NULL DEFAULT 1 COMMENT '分类号类型（IPC CPC UPC LOC）',
  `level` tinyint(1) NULL DEFAULT 1 COMMENT '层级',
  `paraphrase` text CHARACTER SET utf8 COLLATE utf8_general_ci NULL COMMENT '注释',
  PRIMARY KEY (`id`) USING BTREE,
  INDEX `code_index`(`code`) USING BTREE,
  INDEX `level_index`(`level`) USING BTREE
) ENGINE = InnoDB CHARACTER SET = utf8 COLLATE = utf8_general_ci COMMENT = '国际分类号表（暂无用处）' ROW_FORMAT = Dynamic;

-- ----------------------------
-- Table structure for os_patent
-- ----------------------------
DROP TABLE IF EXISTS `os_patent`;
CREATE TABLE `os_patent`  (
  `id` int(0) UNSIGNED NOT NULL AUTO_INCREMENT COMMENT '专利信息ID',
  `name` text CHARACTER SET utf8 COLLATE utf8_general_ci NULL COMMENT '专利名称(标题)',
  `nameout` text CHARACTER SET utf8 COLLATE utf8_general_ci NULL COMMENT '专利名称(标题)（译）',
  `patentno` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '专利号',
  `abstract` text CHARACTER SET utf8 COLLATE utf8_general_ci NULL COMMENT '摘要',
  `abstractout` text CHARACTER SET utf8 COLLATE utf8_general_ci NULL COMMENT '摘要(译)',
  `applicationno` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '申请号',
  `appdate` int(0) NULL DEFAULT NULL COMMENT '申请日',
  `publicno` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '公开号',
  `publicdate` int(0) NULL DEFAULT NULL COMMENT '公开日',
  `fpublicdate` int(0) NULL DEFAULT 0 COMMENT '首次公开日',
  `publictono` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '公开授权号',
  `publictodate` int(0) NULL DEFAULT NULL COMMENT '公开授权日',
  `bureau` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '受理局',
  `intclassno` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL,
  `intclasscpcno` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL,
  `intclassupcno` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL,
  `intclasslocno` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL,
  `status` tinyint(1) NULL DEFAULT 0 COMMENT '专利状态【有权、审中、无权、PCT状态】 ',
  `type` tinyint(1) NULL DEFAULT 0 COMMENT '专利类型【发明、新型、外观】',
  `autdoc` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '授权文档名称',
  `autaddr` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '授权文档文件地址',
  `pubdoc` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '公开文档名称',
  `pubaddr` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '公开文档文件地址',
  `code` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '文献代码',
  `manual` text CHARACTER SET utf8 COLLATE utf8_general_ci NULL,
  `manualout` text CHARACTER SET utf8 COLLATE utf8_general_ci NULL,
  `page` int(0) NULL DEFAULT 0 COMMENT '文献页数',
  `inventornum` int(0) NULL DEFAULT 0 COMMENT '发明人数量',
  `num1` int(0) NULL DEFAULT 0 COMMENT '主权项数量',
  `num2` int(0) NULL DEFAULT 0 COMMENT '权利要求数量',
  `num3` int(0) NULL DEFAULT 0 COMMENT '独立权利要求数量',
  `content` mediumtext CHARACTER SET utf8 COLLATE utf8_general_ci NULL,
  `selfcontent` mediumtext CHARACTER SET utf8 COLLATE utf8_general_ci NULL,
  `contentout` mediumtext CHARACTER SET utf8 COLLATE utf8_general_ci NULL,
  `priorityno` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '优先权号',
  `prioritycountry` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '优先权国家',
  `prioritydate` int(0) NULL DEFAULT 0 COMMENT '优先权日',
  `simplefamilynum` int(0) NULL DEFAULT 0 COMMENT '简单同族数量',
  `inpadocfamilynum` int(0) NULL DEFAULT 0 COMMENT 'INPADOC同族数量',
  `simplefamilyid` int(0) NULL DEFAULT NULL,
  `inpadocfamilyid` int(0) NULL DEFAULT NULL,
  `quoteno` int(0) NULL DEFAULT 0 COMMENT '引用专利数量',
  `quotedno` int(0) NULL DEFAULT 0 COMMENT '被引用次数',
  `quotedno3` int(0) NULL DEFAULT 0 COMMENT '3年内被引用次数',
  `quotedno5` int(0) NULL DEFAULT 0 COMMENT '5年内被引用次数',
  `nonpatentquoteno` int(0) NULL DEFAULT 0 COMMENT '非专利引用文献数量',
  `wonational` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT 'WO国家阶段',
  `agencyid` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '代理机构ID',
  `agentid` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '代理人ID',
  `examiner` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '审查员',
  `assexaminer` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '助理审查员',
  `quote` text CHARACTER SET utf8 COLLATE utf8_general_ci NULL COMMENT '引用专利',
  `quoted` text CHARACTER SET utf8 COLLATE utf8_general_ci NULL COMMENT '被引用专利',
  `nonpatentquote` longtext CHARACTER SET utf8 COLLATE utf8_general_ci NULL COMMENT '非专利引用文献',
  `assignedtype` tinyint(1) NULL DEFAULT 1 COMMENT '分配后完成状态(已完成、未完成操作)',
  `abstract_path` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '摘要附图',
  `firstapplicant` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL,
  `firstapplicantaddr` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL,
  `firstapplicantnum` int(0) NULL DEFAULT 0,
  `firstnventor` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL,
  `firstnventoraddr` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL,
  `selfcontentnum` int(0) NULL DEFAULT 0,
  `sfamily` text CHARACTER SET utf8 COLLATE utf8_general_ci NULL,
  `ifamily` text CHARACTER SET utf8 COLLATE utf8_general_ci NULL,
  `epcountry` text CHARACTER SET utf8 COLLATE utf8_general_ci NULL COMMENT '指定国状态',
  `simple_family` int(0) NULL DEFAULT NULL COMMENT '简单同族ID',
  `patsnap_family` int(0) NULL DEFAULT NULL COMMENT 'PatSnap同族ID',
  `inpadoc_family` int(0) NULL DEFAULT NULL COMMENT 'INPADOC同族ID',
  `patsnapfamilynum` int(0) NULL DEFAULT NULL COMMENT 'PatSnap同族数量',
  PRIMARY KEY (`id`) USING BTREE,
  INDEX `pno_index`(`publicno`) USING BTREE,
  INDEX `apn_index`(`applicationno`) USING BTREE,
  INDEX `appdate_index`(`appdate`) USING BTREE,
  INDEX `publicdate_index`(`publicdate`) USING BTREE,
  INDEX `fpublicdate_index`(`fpublicdate`) USING BTREE,
  INDEX `publictodate_index`(`publictodate`) USING BTREE,
  INDEX `num2_index`(`num2`) USING BTREE,
  INDEX `num3_index`(`num3`) USING BTREE,
  INDEX `simplefamilynum_in`(`simplefamilynum`) USING BTREE,
  INDEX `simple_family`(`simple_family`) USING BTREE,
  INDEX `inpadoc_family`(`inpadoc_family`) USING BTREE
) ENGINE = InnoDB AUTO_INCREMENT = 24094 CHARACTER SET = utf8 COLLATE = utf8_general_ci COMMENT = '专利信息表' ROW_FORMAT = Dynamic;

-- ----------------------------
-- Records of os_patent
-- ----------------------------
INSERT INTO `os_patent` VALUES (22745, 'R-T-B-C based rare-earth magnetic powder and bonded magnet', '基于R-T-B-C的稀土磁粉和粘结磁铁', 'US7316752B2', 'The step of preparing a rapidly solidified alloy by rapidly quenching a melt of an R-T-B-C based rare-earth alloy (where R is at least one of the rare-earth elements including Y, T is a transition metal including iron as its main ingredient, B is boron, and C is carbon) and the step of thermally treating and crystallizing the rapidly solidified alloy are included. The step of thermally treating results in producing a first compound phase with an R2Fe14B type crystal structure and a second compound phase having a diffraction peak at a site with an interplanar spacing d of 0.295 nm to 0.300 nm (i.e., where 2θ=30 degrees). An intensity ratio of the diffraction peak of the second compound phase to that of R2Fe14B type crystals representing a (410) plane is at least 10%. The present invention provides an R-T-B-C based rare-earth alloy magnetic material, including carbon (C) as an indispensable element but exhibiting excellent magnetic properties, and makes it possible to recycle rare-earth magnets.', '通过快速淬火RTBC基稀土合金的熔体制备快速凝固合金的步骤（其中R是包括Y的稀土元素中的至少一种，T是包含铁作为其主要成分的过渡金属，B优选硼，C为碳，并包括热处理和结晶快速凝固合金的步骤。热处理步骤导致产生具有R2Fe14B型晶体结构的第一化合物相和在晶面间距d为0.295nm至0.300nm的位置处具有衍射峰的第二化合物相（即，其中2θ= 30度） 。第二化合物相的衍射峰与表示（410）面的R2Fe14B型晶体的强度比为至少10％。本发明提供一种R-T-B-C基稀土合金磁性材料，其包含碳（C）作为必不可少的元素，但具有优异的磁性，并且可以回收稀土磁体。', 'US10/481015', 993744000, 'US7316752B2', 1199721600, 1094054400, NULL, 1199721600, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 18, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 9, 9, NULL, NULL, 15, 5, 2, 2, 0, NULL, '849', NULL, 'SHEEHAN, JOHN P', NULL, 'EP0867897A1 | JP1990071506A | JP1992268050A | JP1992268703A | JP1992269806A | JP1993105901A | JP1994124817A | JP1994124820A | JP1994124821A | JP1995078706A | JP1998324962A | JP2001118710A | JP2001143916A | US20030052013A1 | US6706124B2', 'DE112013007128T5 | US10079085B2 | US20100200405A1 | US20150318089A1 | US8268264B2', NULL, 1, '\\20220530\\d9e2f912b2954336b39bf2f949fff05c.jpeg', NULL, NULL, 1, NULL, NULL, 16, NULL, NULL, NULL, 38847, 38849, 38848, 9);
INSERT INTO `os_patent` VALUES (22746, 'Process for producing, through strip casting, raw alloy for nanocomposite type permanent magnet', '通过带钢铸造生产纳米复合型永磁体用合金的方法', 'US7004228B2', 'To make a raw alloy, consisting mostly of amorphous structure, highly productively and at a reduced cost for a nanocomposite magnet, a molten alloy represented by Fe100-x-y-zRxQyMz (where R is at least one element selected from Pr, Nd, Dy and Tb; Q is B and/or C; M is at least one element selected from Co, Al, Si, Ti, V, Cr, Mn, Ni, Cu, Ga, Zr, Nb, Mo, Ag, Pt, Au and Pb; and 1 at %≦x&#x3c;6 at %, 15 at %≦y≦30 at % and 0 at %≦z≦7 at %) is prepared. This molten alloy is rapidly cooled by a strip casting process in which the alloy is fed onto a chill roller, rotating at a peripheral velocity of 3 m/s to less than 20 m/s, at a feeding rate per unit contact width of 0.2 kg/min/cm to 5.2 kg/min/cm. In this manner, an alloy including at least 60 volume percent of amorphous phase can be obtained.', '为了制造主要由非晶结构组成的原料合金，高效地并且以低成本制造纳米复合磁体，由Fe100-xy-zRxQyMz表示的熔融合金（其中R是选自Pr，Nd，Dy和的至少一种元素）。 Tb; Q是B和/或C; M是选自Co，Al，Si，Ti，V，Cr，Mn，Ni，Cu，Ga，Zr，Nb，Mo，Ag，Pt，Au和至少一种元素。制备Pb;和1at％≤x<6at％，15at％≤y≤30at％和0at％≤z≤7at％）。通过带式铸造工艺快速冷却该熔融合金，其中合金被送到冷却辊上，以3m / s的圆周速度旋转到小于20m / s，每单位接触宽度的进给速度为0.2。 kg / min / cm至5.2kg / min / cm。以这种方式，可以获得包含至少60体积％的非晶相的合金。', 'US10/381412', 1001347200, 'US7004228B2', 1141056000, 1065024000, NULL, 1141056000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 3, 0, 0, 0, NULL, NULL, NULL, '2000307671', 'JP', 970761600, 21, 21, NULL, NULL, 71, 13, 0, 2, 20, NULL, '850', NULL, 'SHEEHAN, JOHN P.', NULL, 'DE19739959A1 | EP0632471A2 | EP1018751A1 | EP1061532A1 | EP1104932A2 | JP1980094151A | JP1984046008A | JP1985009852A | JP1986140350A | JP1989000703A | JP1989007501A | JP1989007502A | JP1989100242A | JP1990000247A | JP1990179803A | JP1990247305A | JP1990247306A | JP1990247307A | JP1990247308A | JP1990247309A | JP1990247310A | JP1990298003A | JP1991260018A | JP1991261104A | JP1995122412A | JP1995166206A | JP1996162312A | JP1996167515A | JP1996229641A | JP1996335506A | JP1997155507A | JP1997155513A | JP1998088294A | JP1998265915A | JP1998317109A | JP1999071646A | JP1999323509A | JP2000079449A | JP2000079451A | JP2001226753A | JP2001244107A | JP2001254159A | US20050040923A1 | US4770723A | US4802931A | US4836868A | US4851058A | US4935074A | US5022939A | US5049208A | US5209789A | US5666635A | US5725792A | US5905424A | US6022424A | US6172589B1 | US6183571B1 | US6183572B1 | US6280536B1 | US6302972B1 | US6332933B1 | US6352599B1 | US6695929B2 | US6790296B2 | US6814776B2 | US6890392B2 | WO1999021196A1 | WO2000003403A1 | WO2000045397A1 | WO2000052713A1', 'US10395823B2 | US11270841B2 | US20050040923A1 | US20060076084A1 | US20100143178A1 | US7695574B2 | US8110049B2 | US9044834B2 | US9067284B2 | US9095940B2 | US9144865B2 | US9336932B1 | US9865382B2', 'Application No. 09/863,902, Filed May 24, 2001. \"Permanent Magnet Including Multiple Ferromagnetic Phases and Method for Producing the Magnet.\" | Chang et al., \"High Performance aFe/Nd2Fe14B-Type Nanocomposites\", pp. 121-123, 01/1998, Applied Physics Letters, vol. 72, No. 1. | Chang et al., \"High Performance aFe/Nd<SUB>2</SUB>Fe<SUB>14</SUB>B-Type Nanocomposites\", pp. 121-123, 01/1998, Applied Physics Letters, vol. 72, No. 1. | Chang et al., \"High Performance aFe/R2Fe14B-Type Nanocomposites with Nominal Compositions of (Nd, La)9.5Fe78xCoxCr2B10.5(X-0.10)\", Journal of Magnestism and Magnetic Materials, vol. 189, No. 1(10-1998), pp. 55-61. | Chang et al., \"High Performance aFe/R<SUB>2</SUB>Fe<SUB>14</SUB>B-Type Nanocomposites with Nominal Compositions of (Nd, La)<SUB>9.5</SUB>Fe<SUB>78x</SUB>Co<SUB>x</SUB>Cr<SUB>2</SUB>B<SUB>10.5</SUB><SUP>(X-0.10)</SUP>\", Journal of Magnestism and Magnetic Materials, vol. 189, No. 1(10-1998), pp. 55-61. | Chang et al., \"Magnetic and Microstructure Studies of Boron-Enriched (Nd0.95La0.05)11Fe76.5-xCoxTi2B10.5(x=0.15) Melt-Spun Ribbons\", pp. 3312-3314, 09/2000, IEEE Transactions on Magnetics, vol. 36, No.5. | Chang et al., \"Magnetic and Microstructure Studies of Boron-Enriched (Nd<SUB>0.95</SUB>La<SUB>0.05</SUB>)11Fe<SUB>76.5-x</SUB>Co<SUB>x</SUB>Ti<SUB>2</SUB>B<SUB>10.5</SUB>(x=0.15) Melt-Spun Ribbons\", pp. 3312-3314, 09/2000, IEEE Transactions on Magnetics, vol. 36, No.5. | Chang et al., \"The Effect of La-Substitution on the Microstructure and Magnetic Properties of Nanocomposite NdFeB Melt Spun Ribbons\", pp. 65-70, 03/97, Journal of Magnetism and Magnetic Materials, vol. 167, Nos. 1-2. | Chang, et al., \"The effect of boron and real earth contents on the magnetic properties of La and Cr substituted a-Fe/R2Fe14B-Type Nanocomposites\", Journal of Applied Physics, vol. 83 No. 11, Jun.1998, pp. 6271-6273. | Chang, et al., \"The effect of boron and real earth contents on the magnetic properties of La and Cr substituted a-Fe/R<SUB>2</SUB>Fe<SUB>14</SUB>B-Type Nanocomposites\", Journal of Applied Physics, vol. 83 No. 11, Jun.1998, pp. 6271-6273. | Chiriac et al., \"ND8Fe73Co5Hf2B12Strip Cast Alloy\", pp. 5338-5340, 05/2000, Journal of Applied Physics, vol. 87, No. 9. | Chiriac et al., \"ND<SUB>8</SUB>Fe<SUB>73</SUB>Co<SUB>5</SUB>Hf<SUB>2</SUB>B<SUB>12</SUB>Strip Cast Alloy\", pp. 5338-5340, 05/2000, Journal of Applied Physics, vol. 87, No. 9. | Hermann et al., \"Growth Kinetics in Undercooled Nd-Fe-B Alloys with Carbon and Ti or Mo Additions\" pp. 82-86, 04/2000, Journal of Magnetism and Magnetic Material, vol. 213, Nos. 1-2. | J.Bernardi, et al., \"Microstructural analysis of stirp cast Nd-Fe-B alloys for high (BH)maxmagnets\", Journal of Applied Physics, vol. 83 No. 11, Jun. 1998, pp. 6396-6398. | Merkulova et al., \"The Temperature Dependence of Coercivity in Nancrystaline Nd-Fe-B(TiC) Magnets\", Journal of Applied Physics, vol. 87, No. 9, (05-2000), pp. 4738-4740. | Q. Chen, et al., \"A Study on the Phase Transformation and Exchange-coupling of (Nd0-95La0-05)9.5FebalCo5Nb2B105Nanaocomposites,\" Materials Research Society Symposium Proceedings, vol. 577, Apr. 1999, pp. 209-219. | Q. Chen, et al., \"A Study on the Phase Transformation and Exchange-coupling of (Nd<SUB>0-95</SUB>La<SUB>0-05</SUB>)<SUB>9.5</SUB>Fe<SUB>bal</SUB>Co<SUB>5</SUB>Nb<SUB>2</SUB>B<SUB>105</SUB>Nanaocomposites,\" Materials Research Society Symposium Proceedings, vol. 577, Apr. 1999, pp. 209-219. | R. Coehoorn, et al., \"Novel Permanent Magnetic Materials Made by Rapid Quenching\", Journal de Physique, C8, Dec. 1988, pp. 669-670. | W. C. Chang et al.: \"THE EFFECTS OF REFRACTORY METAL ON THE MAGNETIC PROPERTIES OF a - Fe/R2Fe14BB - TYPE NANOCOMPOSITES\", IEEE TRANSACTIONS ON MAGNETICS; Sep. 1999; vol.35 No. 5; IEMGAQ; pp. 3265-3267. | W. C. Chang et al.: \"THE EFFECTS OF REFRACTORY METAL ON THE MAGNETIC PROPERTIES OF a - Fe/R<SUB>2</SUB>Fe<SUB>14B</SUB>B - TYPE NANOCOMPOSITES\", IEEE TRANSACTIONS ON MAGNETICS; Sep. 1999; vol.35 No. 5; IEMGAQ; pp. 3265-3267.', 1, '\\20220526\\10efdd676de14b7d9237d7a57d7b4806.png', NULL, NULL, 2, NULL, NULL, 8, NULL, NULL, NULL, 38850, 38852, 38851, 22);
INSERT INTO `os_patent` VALUES (22747, 'Process for producing, through strip casting, raw alloy for nanocomposite type permanent magnet', '通过条带铸造,生产纳米复合型永磁磁铁的生产方法', 'AU2001088123A1', NULL, NULL, 'AU2001088123', 1001347200, 'AU2001088123A1', 1019404800, 1019404800, NULL, NULL, '澳大利亚', NULL, NULL, NULL, NULL, 8, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 21, 3, 0, 0, 0, NULL, NULL, NULL, '2000307671 | PCT/JP2001/008317', 'JP | WO', 970761600, 21, 21, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 2, NULL, NULL, 0, NULL, NULL, NULL, 38850, 38852, 38851, 22);
INSERT INTO `os_patent` VALUES (22748, 'Rare-earth sintered magnet and method of producing the same', '稀土烧结磁体及其制造方法', 'US7048808B2', 'The present invention provides a rare-earth sintered magnet exhibiting desirable magnetic properties in which the amount of Nd and/or Pr forming a non-magnetic phase in a grain boundary phase is reduced. Specifically, the present invention provides a rare-earth sintered magnet having a composition of (R1x+R2y)T100-x-y-zQz where R1 is at least one element selected from the group consisting of all rare-earth elements excluding La (lanthanum), Y (yttrium) and Sc (scandium); R2 is at least one element selected from the group consisting of La, Y and Sc; T is at least one element selected from the group consisting of all transition elements; Q is at least one element selected from the group consisting of B and C, and including, as a main phase, a crystal grain of an Nd2Fe14B crystalline structure, wherein: molar fractions x, y and z satisfy 8≦x≦18 at %, 0.1≦y≦3.5 at % and 3≦z≦20 at %, respectively; and a concentration of R2 is higher in at least a part of a grain boundary phase than in the main phase crystal grains.', '本发明提供一种稀土类烧结磁铁，其表现出所希望的磁特性，其中在晶界相中形成非磁性相的Nd和/或Pr的量减少。具体地，本发明提供一种稀土烧结磁体，其组成为（R1x + R2y）T100-xy-zQz，其中R1是选自除La（镧）以外的所有稀土元素中的至少一种元素， Y（钇）和Sc（钪）; R2是选自La，Y和Sc中的至少一种元素; T是选自由所有过渡元素组成的组中的至少一种元素; Q是选自B和C中的至少一种元素，并且包括作为主相的Nd2Fe14B晶体结构的晶粒，其中：摩尔分数x，y和z满足8≤x≤18at％ ，0.1≤y≤3.5at％，3≤z≤20at％;并且，在晶界相的至少一部分中，R2的浓度高于在主相晶粒中的浓度。', 'US09/966743', 1001865600, 'US7048808B2', 1148313600, 1022688000, NULL, 1148313600, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 26, 3, 0, 0, 0, NULL, NULL, NULL, '2000305121 | 2000312540', 'JP | JP', 970588800, 12, 14, NULL, NULL, 11, 27, 1, 5, 8, NULL, '849', NULL, 'SHEEHAN, JOHN', NULL, 'EP0255939A2 | JP1988006808A | JP1991020001A | JP1992155902A | JP1995011306A | JP1996107034A | US5431747A | US5447578A | US5589009A | US5595608A | US5963774A', 'CN101740190A | JP2015156436A | JP6248689B2 | KR100771676B1 | US10160037B2 | US10395823B2 | US10535452B2 | US10614952B2 | US10950373B2 | US11270841B2 | US20100200405A1 | US20110000586A1 | US20150132178A1 | US20150248953A1 | US20160027565A1 | US20160086703A1 | US20170330658A1 | US8268264B2 | US9044810B2 | US9044834B2 | US9067284B2 | US9095940B2 | US9144865B2 | US9336932B1 | US9490053B2 | US9947445B2 | US9953751B2', 'European Search Report Dated Aug. 28, 2003. | European Search Report Dated Aug. 28, 2003. cited by other. | Honshima et al., \"High-Energy NdFeB Magnets and Their Applications\", Journal of Materials Engineering and Performance vol. 3(2), Apr. 3, 1994, pp. 218-222. cited by other . | M.G. Benz et al., \"High-Energy-Product (Pr-Nd-Ce) FeB Magnets Produced DIrectly from Mixed-Rare-Earth-Oxide Feed for MRI Medical Imaging Applications\", pp. 1-11 (plus Technical Report Abstract Page), Jun. 2000, GE Research & Development Center, 2000CRD061, Class 1. cited by other . | M.G. Benz et al., \"Rare-Earth Magnets and Their Applications\", pp. 99-108, 2000, Proceedings of the 16th International Workshop on Rare-Earth Magnets and Their Applications, vol. 1. cited by other . | Notice of Reasons for Rejection (Dated Apr. 8, 2003) w/Translation. cited by other . | The Condensed Chemical Dictionary, 8.sup.th edition, 1971, p. 753. cited by examiner . | The Condensed Chemical Dictionary, 8<SUP>th </SUP>edition, 1971, p. 753.', 1, '\\20220510\\4bb24003a18a4fc5aba70dcb095acc7b.png', NULL, NULL, 1, NULL, NULL, 19, NULL, NULL, NULL, 38853, 38855, 38854, 14);
INSERT INTO `os_patent` VALUES (22749, 'Powder compacting method, powder compacting apparatus and method for producing rare earth magnet', '粉末压制方法，粉末压制设备和制造稀土磁体的方法', 'US7037465B2', 'A powder compacting method includes the steps of: providing a powder material; loading the powder material into a cavity; uniaxially pressing the powder material, which has been loaded into the cavity, between two opposed press surfaces, thereby obtaining a compact, wherein at least one of the two press surfaces is deformed elastically under a compacting pressure when contacting with the powder material in the cavity; and unloading the compact from the cavity. According to this powder compacting method, even when the powder material has a non-uniform fill density distribution, a compact with a uniform density distribution can be obtained at a high productivity.', '粉末压制方法包括以下步骤：提供粉末材料;将粉末材料装入空腔;在两个相对的压力表面之间单轴压制已经装入腔体中的粉末材料，从而获得压块，其中当与腔体中的粉末材料接触时，两个压力表面中的至少一个在压缩压力下弹性变形。 ;从空腔中卸下压块。根据这种粉末压制方法，即使当粉末材料具有不均匀的填充密度分布时，也可以以高生产率获得具有均匀密度分布的压块。', 'US10/415748', 1004889600, 'US7037465B2', 1146499200, 1085587200, NULL, 1146499200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 26, 1, 0, 0, 0, NULL, NULL, NULL, '2000337364', 'JP', 973440000, 10, 10, NULL, NULL, 17, 15, 2, 5, 0, NULL, '849', NULL, 'SHEEHAN, JOHN P.', NULL, 'EP1020285A2 | JP1976136198A | JP1982124599A | JP1986196516A | JP1987267401A | JP1988110521A | JP1998058198A | JP2000317696A | JP2001252792A | US3593380A | US4770723A | US4792368A | US5250255A | US5383978A | US5449481A | US6355210B1 | US6474576B1', 'US10395823B2 | US10543647B2 | US11270841B2 | US20070264374A1 | US20110229720A1 | US7604468B2 | US8343402B1 | US8556619B2 | US8708691B2 | US8865050B2 | US9044834B2 | US9067284B2 | US9095940B2 | US9144865B2 | US9336932B1', NULL, 1, '\\20220510\\1cf085294de340d7a8f5a053f7925a6c.png', NULL, NULL, 1, NULL, NULL, 17, NULL, NULL, NULL, 38856, 38858, 38857, 10);
INSERT INTO `os_patent` VALUES (22750, 'Method and device for powder press molding, and method of manufacturing rare-earth magnet', '粉末压模的方法和装置,以及制造稀土磁铁的方法', 'AU2002011007A1', NULL, NULL, 'AU2002011007', 1004889600, 'AU2002011007A1', 1021392000, 1021392000, NULL, NULL, '澳大利亚', NULL, NULL, NULL, NULL, 8, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 27, 1, 0, 0, 0, NULL, NULL, NULL, '2000337364 | PCT/JP2001/009667', 'JP | WO', 973440000, 10, 10, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 38856, 38858, 38857, 10);
INSERT INTO `os_patent` VALUES (22751, 'Method for cutting rare earth alloy, method for manufacturing rare earth magnet, and wire-saw machine', '稀土合金的切割方法，稀土类磁铁的制造方法以及线锯机', 'US6837778B2', 'A method for cutting a rare earth alloy using a wire with abrasive grains fixed to a core wire, including the step of cutting the rare earth alloy with the wire traveling in a state that a portion of the rare earth alloy to be cut with the wire is immersed in a coolant containing water as the main component, the coolant having a surface tension at 25° C. in a range of 25 mN/m to 60 mN/m.', '一种使用具有固定在芯线上的磨粒的线材切割稀土合金的方法，包括切割稀土合金的步骤，其中线材在用线材切割的一部分稀土合金的状态下行进将冷却剂浸入含有水作为主要成分的冷却剂中，冷却剂在25℃下的表面张力为25mN / m至60mN / m。', 'US09/996318', 1006444800, 'US6837778B2', 1104768000, 1029945600, NULL, 1104768000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 18, 3, 0, 0, 0, NULL, NULL, NULL, '2000358462 | 2001318867', 'JP | JP', 974995200, 10, 19, NULL, NULL, 21, 17, 0, 7, 2, NULL, '850', NULL, 'HAIL, III, JOSEPH J.', 'OJINI, ANTHONY', 'JP1997029607A | JP1997314548A | JP1998166353A | JP1998277914A | JP1999198018A | JP1999198020A | JP1999277402A | JP1999309661A | JP2000218504A | JP2000296455A | US4005044A | US4770723A | US4792368A | US5013482A | US5176850A | US5201305A | US5827113A | US5896851A | US6006737A | US6381830B1 | US6390896B1', 'KR101558196B1 | US10245661B2 | US10252357B2 | US20050155595A1 | US20080264228A1 | US20110174285A1 | US20110240001A1 | US20120006312A1 | US20120192848A1 | US20150298228A1 | US20160184908A1 | US7025054B2 | US8636560B2 | US8851059B2 | US9314942B2 | US9691215B2 | US9824523B2', 'U.S. patent application Ser. No. 09/566,736, Sadahiko Kondo, \"Method of machining rare earth alloy and method of fabricating rare magnet using the same\"; filing date May 9, 2000. | U.S. patent application Ser. No. 09/662,136, Hazime Ishida., \"Method and apparatus for cutting rare earth alloy\", filing date Sep. 14, 2000.', 1, '\\20220510\\b72c4f83b36d4f7ea80d16f029f74f8a.png', NULL, NULL, 1, NULL, NULL, 27, NULL, NULL, NULL, 38859, 38861, 38860, 21);
INSERT INTO `os_patent` VALUES (22752, 'Method for producing granulated powder of R-FE-B type alloy and method for producing R-FE-B type alloy sintered compact', 'R-FE-B系合金造粒粉的制造方法及R-FE-B系合金烧结体的制造方法', 'US7214343B2', 'The method for producing a granulated powder of the present invention includes the steps of: preparing an R—Fe—B alloy powder; and granulating the alloy powder using at least one kind of granulating agent selected from normal paraffins, isoparaffins and depolymerized oligomers, to prepare a granulated powder. The produced R—Fe—B alloy granulated powder is excellent in flowability and compactibility as well as in binder removability.', '本发明的造粒粉末的制造方法包括以下步骤：制备R-Fe-B合金粉末;使用选自正链烷烃，异链烷烃和解聚低聚物中的至少一种造粒剂将合金粉末造粒，制备造粒粉末。所制备的R-Fe-B合金造粒粉末具有优异的流动性和成型性以及粘合剂可除去性。', 'US10/473335', 1017158400, 'US7214343B2', 1178553600, 1091635200, NULL, 1178553600, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 7, 0, 0, 0, NULL, NULL, NULL, '2001096572', 'JP', 985795200, 14, 14, NULL, NULL, 19, 5, 2, 3, 2, NULL, '849', NULL, 'WYSZOMIERSKI, GEORGE', NULL, 'CS277505B6 | EP0778594A1 | EP0991086A1 | EP1020285A2 | JP1981122105A | JP1982124599A | JP1988110521A | JP1988237402A | JP1996107034A | JP1997017674A | JP1998058198A | US4770723A | US4792368A | US5167914A | US5192372A | US5383978A | US5666635A | US6187259B1 | US6885267B2', 'US20050006005A1 | US20100021335A1 | US7622010B2 | US7931756B2 | US8540929B2', 'Neomax Co., Ltd., European Search Report, 02708697.4-122-JP0203023, Feb. 22, 2005. | Neomax Co., Ltd., European Search Report, 02708697.4-122-JP0203023, Feb. 22, 2005. cited by other.', 1, '\\20220510\\c86ebbf9a55c4737a37aad9893d20ed5.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 38862, 38864, 38863, 14);
INSERT INTO `os_patent` VALUES (22753, 'Rare earth alloy sintered compact and method of making the same', '稀土合金烧结体及其制造方法', 'US7201810B2', 'A rare earth alloy sintered compact includes a main phase represented by (LR1-xHRx)2T14A, where T is Fe with or without non-Fe transition metal element(s); A is boron with or without carbon; LR is a light rare earth element; HR is a heavy rare earth element; and 0&#x3c;x&#x3c;1. The sintered compact is produced by preparing multiple types of rare earth alloy materials including respective main phases having different HR mole fractions, mixing the alloy materials so that the sintered compact will include sintering a main phase having an average composition represented by (LR1-xHRx)2T14A, thereby obtaining a mixed powder, and the mixed powder. The alloy materials include first and second rare earth alloy materials represented by (LR1-uHRu)2T14A (where 0≦μ&&#x3c;x) and (LR1-vHRV)2T14A (where x&#x3c;v≦1) and including a rare earth element R(=LR+HR) at R1 and R2 (at%), respectively. Δ=|R1−R2| is about 20% or less of (R1+R2)/2.', '稀土合金烧结体包括由（LR1-xHRx）2T14A表示的主相，其中T是具有或不具有非Fe过渡金属元素的Fe; A是含有或不含碳的硼; LR是一种轻稀土元素; HR是重稀土元素;并且0 <x <1。通过制备多种类型的稀土合金材料（包括具有不同HR摩尔分数的各主相），混合合金材料使得烧结体包括烧结具有由（LR1-xHRx）表示的平均组成的主相来制备烧结体。在图2T14A中，由此获得混合粉末和混合粉末。合金材料包括由（LR1-uHRu）2T14A（其中0≤μ且<x）和（LR1-vHRV）2T14A（其中x <v≤1）表示并包括稀土元素R的第一和第二稀土合金材料（ = R1 + R2（％）处的= LR + HR）。 Δ= | R1-R2 | （R1 + R2）/ 2约为20％或更少。', 'US10/381008', 1017331200, 'US7201810B2', 1176134400, 1115827200, NULL, 1176134400, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 19, 2, 0, 0, 0, NULL, NULL, NULL, '2001102513', 'JP', 985881600, 15, 16, NULL, NULL, 21, 11, 6, 9, 2, NULL, '850', NULL, 'SHEEHAN, JOHN P.', NULL, 'EP0994493A2 | EP1011113A2 | JP1988033505A | JP1988073502A | JP1988115307A | JP1988245903A | JP1994096928A | JP1996031626A | JP1999054351A | JP1999113225A | US20020057982A1 | US20040020563A1 | US20040050454A1 | US20040103521A1 | US4770723A | US4792368A | US4968347A | US5595608A | US5647886A | US5666635A | US6214288B1', 'CN101727564A | DE112007003401T5 | TW201012004A | US20070227624A1 | US20110074530A1 | US20110236246A1 | US20110262297A1 | US20130049910A1 | US7497892B2 | US8287661B2 | US8823478B2', 'H Kanekiyo et al.: \"Relation Between Grain Size and Magnetizability of V, Mo-Added Md-Fe-B Sintered Permanent Magnets\"; Journal of Magnetics Society of Japan; vol. 16; No. 2; 1992; pp. 143-146. cited by other . | Official Communication issued in corresponding Japanese Patent Application No. 2002-089551, mailed on Mar. 14, 2006. cited by other.', 1, '\\20220510\\3cfcd15a35624d18a81ed5ebaae3ffd5.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 38865, 38867, 38866, 16);
INSERT INTO `os_patent` VALUES (22754, '耐塩水性磁石合金粉、その製造方法及びそれを用いて得られるボンド磁石用樹脂組成物、ボンド磁石又は圧密磁石', '耐盐盐磁铁合金粉末，其制造方法，使用其得到的粘结磁铁用树脂组合物，粘结磁铁或压缩磁铁', 'JP4126947B2', '【課題】 塩水に触れる環境下、磁石合金粉、ボンド磁石や圧密磁石の耐塩水性を向上できる耐塩水性磁石合金粉、その製造方法及びそれを用いて得られるボンド磁石用樹脂組成物、ボンド磁石又は圧密磁石の提供。\n\n【解決手段】 希土類元素を含む鉄系磁石合金粉からなる磁石粉末(A)の表面上に、鉄と希土類元素の金属リン酸塩(b-1)、及びアルミニウム、亜鉛、マンガン、銅又はカルシウムから選ばれた1種以上の金属リン酸塩(b-2)からなる複合金属リン酸塩被膜(B)が形成されていることを特徴とする耐塩水性磁石合金粉などによって提供。', '要解决的问题：提供耐盐溶的磁体合金粉末，其能够在磁体与盐溶液接触的环境中改善粘结磁体或致密磁体的抗盐溶液性能，方法其制造方法，使用其的粘合磁铁用树脂组合物，粘合磁铁或小型磁铁。 ŽSOLUTION：复合金属磷酸盐薄膜（B），由铁和稀土元素的金属磷酸盐（b-1）和一种或多种元素的金属磷酸盐（b-2）组成，选自铝，锌，在由含有稀土元素的铁基磁铁合金粉末形成的磁铁粉末（A）的表面上形成锰，铜和钙，以形成耐盐溶的磁铁合金粉末。 Ž', 'JP2002122420', 1019577600, 'JP4126947B2', 1217347200, 1068134400, NULL, 1211472000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '近藤 聡', NULL, 'JP1992021702A | JP1992160105A | JP1994077027A | JP1999054312A | JP2000058312A | JP2000260616A', NULL, NULL, 1, '\\20220510\\94ef0afa23524061adeb37922b7a3f27.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 38868, 38870, 38869, 4);
INSERT INTO `os_patent` VALUES (22755, 'Copper plating solution and method for copper plating', '镀铜溶液和镀铜方法', 'US7517555B2', 'A copper plating solution according to the present invention is characterized by that it comprising 0.03 mol/L to 0.5 mol/L of copper sulfate, 0.05 mol/L to 0.7 mol/L of ethylenediaminetetraacetic acid and 0.02 mol/L to 0.3 mol/L of sulfite, and has a pH adjusted to 5.0 to 8.5. A method for copper plating according to the present invention is characterized by that it comprises using the copper plating solution above. The copper plating solution and the method for copper plating according to the present invention stably provide a uniform copper plating film excellent in adhesion on the surface of an article to be plated, such as rare earth metal-based permanent magnet.', '根据本发明的镀铜溶液的特征在于其包含0.03mol / L至0.5mol / L的硫酸铜，0.05mol / L至0.7mol / L的乙二胺四乙酸和0.02mol / L至0.3mol / L。亚硫酸盐，pH调节至5.0至8.5。根据本发明的镀铜方法的特征在于它包括使用上述铜镀液。根据本发明的镀铜溶液和镀铜方法稳定地提供在待镀物品表面上的粘附性优异的均匀铜镀膜，例如稀土金属基永磁铁。', 'US10/474210', 1019750400, 'US7517555B2', 1239638400, 1089820800, NULL, 1239638400, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 6, 4, 0, 0, 0, NULL, NULL, NULL, '2001131033', 'JP', 988300800, 8, 8, NULL, NULL, 15, 0, 0, 0, 1, NULL, '851', NULL, 'BAREFORD, KATHERINE A', NULL, 'JP1981136970A | JP1989062475A | JP1989263278A | JP1991283607A | JP1999217689A | JP2001131761A | US3615732A | US3635758A | US4209331A | US4391742A | US4617205A | US4650691A | US5302464A | US5750018A | US6609783B1', NULL, 'Honma, et al \"Electroless Copper Deposition Process Using Glyoxylic Acid as a Reducing Agent\", J. Electrochem. Soc., vol. 141, No. 3, Mar. 1994, pp. 730-733. cited by examiner.', 1, '\\20220510\\2c240491c94143259e1a3a70999816ad.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 38871, 38873, 38872, 8);
INSERT INTO `os_patent` VALUES (22756, '急冷合金の製造方法', '生产淬火合金的方法', 'JP3647420B2', '【課題】 均一な組織を持った急冷合金を提供し、特性の優れたナノコンポジット磁石を製造する。\n\n【解決手段】 回転する冷却ロールに対して合金の溶湯を接触させることにより、前記合金を急冷し、それによって結晶相を含有する合金を得る急冷合金の製造方法であって、合金を加熱して、前記合金の溶湯を作製する工程と、合金の溶湯を冷却ロールに供給する工程と、合金の溶湯が凝固してゆく過程において、移動しつつある前記合金が放射する赤外線を検知することにより、合金温度を測定する工程と、合金温度に基づいて急冷条件を調節する工程とを包含する。', '要解决的问题：提供具有均匀结构的淬火合金，并制造具有优异性能的纳米复合磁体。\n\n一种通过使合金熔体与旋转冷却辊接触以通过加热合金获得含有晶相的合金来生产用于淬火合金的快速凝固合金的方法，其中合金被加热，制备所述合金熔体的步骤，将合金熔体供应到冷却辊的步骤，以及在熔融合金凝固过程中检测由所述移动合金发射的红外辐射的步骤，测量合金温度，并根据合金温度调整淬火条件。', 'JP2002128900', 1020096000, 'JP3647420B2', 1115740800, 1068480000, NULL, 1108656000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 17, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '中澤 登', NULL, NULL, NULL, NULL, 1, '\\20220510\\a80005e3704e41999942124057ccbe47.png', NULL, NULL, 1, NULL, NULL, 14, NULL, NULL, NULL, 38874, 38876, 38875, 2);
INSERT INTO `os_patent` VALUES (22757, 'Iron-based rare earth alloy nanocomposite magnet and method for producing the same', '铁基稀土合金纳米复合磁体及其制造方法', 'US7208097B2', 'An iron-based rare earth alloy nanocomposite magnet has a composition represented by (Fe1-mTm)100-x-y-zQxRyTiz, where T is Co and/or Ni, Q is B and/or C and R is rare earth element(s) including substantially no La or Ce. x, y, z and m satisfy 10 at %&#x3c;x≦17 at %, 7 at %≦y&#x3c;10 at %, 0.5 at %≦z≦6 at % and 0≦m≦0.5, respectively. The magnet includes crystal grains of an R2T14Q type compound having an average grain size of 20 nm to 200 nm and a ferromagnetic iron-based boride that exists in a grain boundary between the crystal grains of the R2T14Q type compound. The boride is dispersed in, or present in the form of a film over, the grain boundary to cover at least partially the surface of the crystal grains of the R2T14Q type compound.', '铁基稀土合金纳米复合磁体具有由（Fe1-mTm）100-xy-zQxRyTiz表示的组成，其中T是Co和/或Ni，Q是B和/或C，R是稀土元素。基本上不含La或Ce。 x，y，z和m分别满足10at％<x≤17at％，7at％≤y<10at％，0.5at％≤z≤6at％且0≤m≤0.5。磁体包括平均晶粒尺寸为20nm至200nm的R2T14Q型化合物的晶粒和存在于R2T14Q型化合物的晶粒之间的晶界中的铁磁性铁基硼化物。硼化物在晶界上分散或以薄膜的形式存在，以至少部分地覆盖R2T14Q型化合物的晶粒表面。', 'US10/381005', 1020787200, 'US7208097B2', 1177344000, 1075910400, NULL, 1177344000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 23, 3, 0, 0, 0, NULL, NULL, NULL, '2001144076 | 2001357785', 'JP | JP', 989856000, 14, 16, NULL, NULL, 131, 5, 4, 4, 37, NULL, '850', NULL, 'SHEEHAN, JOHN P.', NULL, 'DE19739959A1 | EP0197712A1 | EP0302395A1 | EP0529148A2 | EP0632471A2 | EP0874375A1 | EP0959478A1 | EP1018751A1 | EP1061532A1 | EP1158545A1 | EP1207537A1 | EP1371434A1 | HU199904B | JP1984046008A | JP1985009852A | JP1986140350A | JP1987062503A | JP1988155601A | JP1988190138A | JP1988301505A | JP1989000703A | JP1989007501A | JP1989007501U | JP1989007502A | JP1989007502U | JP1989081301A | JP1989100242A | JP1989162702A | JP1989204401A | JP1990247307A | JP1990298003A | JP1991260018A | JP1991261104A | JP1991264653A | JP1992147604A | JP1993269549A | JP1993315174A | JP1994032471A | JP1994140235A | JP1994338407A | JP1995122412A | JP1995226312A | JP1996053710A | JP1996124730A | JP1996162312A | JP1996167515A | JP1996322175A | JP1997155507A | JP1997155513A | JP1998053844A | JP1998088294A | JP1998282790A | JP1999008109A | JP1999071646A | JP1999101607A | JP1999206075A | JP1999323509A | JP2000079449A | JP2000079451A | JP2000234137A | JP2000235909A | JP2000348919A | JP2001244107A | JP2002064009A | JP2002080921A | JP2002175908A | JP2002212686A | JP2002239688A | JP2002302702A | KR100201601B1 | RU2136069C1 | US20010015239A1 | US20020017339A1 | US20020117235A1 | US20030136468A1 | US20040051614A1 | US20040099346A1 | US20040134567A1 | US20040194856A1 | US20050040923A1 | US4585473A | US4597938A | US4664724A | US4770723A | US4802931A | US4836868A | US4845837A | US4935074A | US4994109A | US5022939A | US5049203A | US5049208A | US5190684A | US5209789A | US5225004A | US5230749A | US5240513A | US5595608A | US5597425A | US5665177A | US5666635A | US5725792A | US5834663A | US5872501A | US5905424A | US6022424A | US6172589B1 | US6183571B1 | US6183572B1 | US6280536B1 | US6302972B1 | US6332933B1 | US6352599B1 | US6386269B1 | US6471786B1 | US6478889B2 | US6648984B2 | US6706124B2 | US6790296B2 | US6796363B2 | US6814776B2 | US6890392B2 | WO1999021196A1 | WO2000003403A1 | WO2000045397A1 | WO2000052713A1 | WO2000052715A1 | WO2001068297A1 | WO2002067275A1 | WO2002093591A2', 'US20100243946A1 | US20100244603A1 | US20120171469A1 | US8465602B2 | US9487854B2', 'Chang et al., \"High Performance .alpha.-Fe/Nd.sub.2Fe.sub.14B-type Nanocomposites\", pp. 121-123, Jan. 1998, Applied Physics Letters, vol. 72, No. 1. cited by other . | Chang et al., \"High Performance .alpha.-Fe/R.sub.2Fe.sub.14B-Type Nanocomposites with Nominal Compositions of (Nd,La).sub.9.5 Fe.sub.78 .sub.xCo.sub.xCr.sub.2B.sub.10.5\", Journal of Magnetism and Magnetic Materials, vol. 189, No. 1 (1998), pp. 55-61. cited by other . | Chang et al., \"High Performance alpha-Fe/Nd<SUB>2</SUB>Fe<SUB>14</SUB>B-type Nanocomposites\", pp. 121-123, Jan. 1998, Applied Physics Letters, vol. 72, No. 1. | Chang et al., \"High Performance alpha-Fe/R<SUB>2</SUB>Fe<SUB>14</SUB>B-Type Nanocomposites with Nominal Compositions of (Nd,La)<SUB>9.5 </SUB>Fe<SUB>78 </SUB><SUB>x</SUB>Co<SUB>x</SUB>Cr<SUB>2</SUB>B<SUB>10.5</SUB>\", Journal of Magnetism and Magnetic Materials, vol. 189, No. 1 (1998), pp. 55-61. | Chang et al., \"Magnetic and Microstructure Studies of Boron-Enriched(Nd.sub.0.95La.sub.0.05)).sub.11Fe.sub.76.5--x Co.sub.xTi.sub.2B.sub.10.5(x=0-15) Melt-Spun Ribbons\", pp. 3312-3314, Sep. 2000, IEEE Transactions on Magnetics, vol. 36, No. 5. cited by other . | Chang et al., \"Magnetic and Microstructure Studies of Boron-Enriched(Nd<SUB>0.95</SUB>La<SUB>0.05)</SUB>)<SUB>11</SUB>Fe<SUB>76.5-x </SUB>Co<SUB>x</SUB>Ti<SUB>2</SUB>B<SUB>10.5</SUB>(x=0-15) Melt-Spun Ribbons\", pp. 3312-3314, Sep. 2000, IEEE Transactions on Magnetics, vol. 36, No. 5. | Chang et al., \"The Effect of La-Substitution on the Microstructure and Magnetic Properties of Nanocomposite NdFeB Melt Spun Ribbons\", pp. 65-70, Mar. 1997, Journal of Magnetism and Magnetic Materials, vol. 167, Nos. 1-2. cited by other . | Chang, et al., \"The effect of boron and rare earth contents on the magnetic properties of La and Cr substituted .alpha.-Fe/R.sub.2Fe.sub.14B-Type Nanocomposites\", Journal of Applied Physics, vol. 83, No. 11, Jun. 1998 pp. 6271-6273. cited by other . | Chiriac et al., \"ND.sub.8Fe.sub.93Co.sub.5HF.sub.2B.sub.12 Strip Cast Alloy\", pp. 5338-5340, May 2000, Journal of Applied Physics, vol. 87, No. 9. cited by other . | Chiriac et al., \"ND<SUB>8</SUB>Fe<SUB>93</SUB>Co<SUB>5</SUB>HF<SUB>2</SUB>B<SUB>12 </SUB>Strip Cast Alloy\", pp. 5338-5340, May 2000, Journal of Applied Physics, vol. 87, No. 9. | D.J. Branagan, et al., \"A New Generation of Gas Atomized Powder with Improved Levels of Energy Product and Processability\", IEEE Transacttions of Magnetics, vol. 32, No. 5, Sep. 1996, pp. 5097-5099. cited by other . | Database WPI, Section Ch, Week 200059, Derwent Publications Ltd., London, GB; class L03, AN 2000-614909 XP002210940 & JP 2000 234137 A (Sumitomo Special Metals Co Ltd), Aug. 29, 2000, abstract. cited by other . | Fumitoshi Yamashita, \"Applications of Rare-Earth Magnets to the Small Motor Industry\", Proceeding of the Seventeenth International Workshop, Aug. 18-22, 2002, Newark, Delaware, USA, pp. 100-111. cited by other . | Hermann et al., \"Growth Kinetics in Undercooled Nd-Fe-B Alloys with Carbon and Ti or Mo Additions\" pp. 82-86, Apr. 2000, Journal of Magnetism and Magnetic Materials, vol. 213, Nos. 1-2. cited by other . | J. Bernardi, et al., \"Microstructural analysis of strip cast Nd-Fe-B alloys for high (BH).sub.max magnets\", Journal of Applied Physics, vol. 83 No. 11, Jun. 1998, pp. 6396-6398. cited by other . | Kanekiyo et al., English language machine translation of Japanese Patent Dcoument No. 2002-64009. cited by examiner . | L. Henderson Lewis et al., \"Phase Composition and Magnetic Characteristics of Inert Gas-Atomized RE-Fe-B-Based Powders\", IEEE Transactions on Magnetics, vol. 31, No. 6, Nov. 1995, pp. 3641-3643. cited by other . | Lewis L H et al, \"Compositional Clustering in ND2FE14B Melt-Spun Ribbons\" Journal of Applied Physics, American Institute of Physics. New York, US, vol. 87, No. 9, May 1, 2000, pp. 4735-4737. cited by other . | M.J. Kramer et al., \"A Generalized Solidification Model and Microstructural Verification for the Nd-Fe-B-Ti-C System Processed by Rapid Solidification\", J. Appl. Phys. 81(8), Apr. 1997. pp. 4459-4461. cited by other . | Merkulova et al., \"The Temperature Dependence of Coercivity in Nancrystallyne Nd-Fe-B-(TiC) Magnets\", Journal of Applied Physics, vol. 87, No. 9, (2000), pp. 4738-4740. cited by other . | Missell et al., \"Rare-Earth Magnets and Their Applications,\" Proceedings of the 14.sup.th International Workshop, Sep. 1996, pp. 28-37, vol. 1, World Scientific, Singapore, new Jersey, London, Hong Kong. cited by othe- r . | Patent Abstracts of Japan, vol. 015, No. 078 (E-1037), Feb. 22, 1991 & JP 02 298003 A (Fuji Elelctrochem Co Ltd), Dec. 10, 1990. cited by other . | Q. Chen, et al., \"A Study on the Phase Transformation and Exchange-coupling of (Nd.sub.0.95 La.sub.0.05).sub.9.5 Fe.sub.bal C.sub.05Nb2B.sub.10.5 Nanaocomposites, Materials Research Society Symposium Proceedings\", Vo. 577, Apr. 1999, pp. 209-219. cited by other . | Q. Chen, et al., \"A Study on the Phase Transformation and Exchange-coupling of (Nd<SUB>0.95 </SUB>La<SUB>0.05</SUB>)<SUB>9.5 </SUB>Fe<SUB>bal </SUB>C<SUB>05</SUB>Nb2B<SUB>10.5 </SUB>Nanaocomposites, Materials Research Society Symposium Proceedings\", Vo. 577, Apr. 1999, pp. 209-219. | R. Coehoorn, et al., \"Novel Permanent Magnetic Materials Made by Rapid Quenching\", Journal de Physique, C8, Dec. 1988, pp. 669-670. cited by oth- er . | U.S. Appl. No. 09/863,902, filed May 24, 2001. \"Permanent magnet including multiple ferromagnetic phases and method for producing the magnet.\", now U.S. Pat. 6,706,124. cited by other . | U.S. Appl. No. 09/986,390, filed Nov. 8, 2001. \"Nanocomposite magnet and method for producing same.\",now U.S. Pat. 6,790,296. cited by other. | U.S. Appl. No. 10/432,862, filed May 28, 2003. \"Nanocomposite magnet.\". | U.S. Appl. No. 10/432,862, filed May 28, 2003. \"Nanocomposite magnet.\". cited by other . | U.S. Appl. No. 10/484,072. Filed Jan. 16, 2004. \"Method for producing nanocomposite magnet using atomizing method.\" cited by other . | U.S. Appl. No. 10/642,324, filed Aug. 18, 2003. \"Compound for rare-earth bonded magnet and bonded magnet using the compound.\" cited by other . | U.S. Appl. No. 10/745,834, filed Dec. 24, 2003. \"Permanent magnet including multiple ferromagnetic phases and method for producing the magnet.\" cited by other . | US 4,756,775, 07/1988, Croat (withdrawn) | US 4,756,775, 07/1988, Croat (withdrawn) cited by other . | W. C. Chang et al.: \"The Effects of Refractory Metals on the Magnetic Properties of .alpha.--Fe/R.sub.2Fe.sub.14B--Type Nanocomposites\"; IEEE Transactions on Magnetics; Sep. 1999; vol. 35 No. 5; IEMGAQ; pp. 3265-3267. cited by other . | Yao, J.M. et al, \"Coercivity of Ti-modified (.alpha.-Fe)-Nd.sub.2Fe.sub.14B Nanocrystalline Alloys\", Journal of Applied Physics, Nov. 15, 1994, pp. 7071-7073, vol. 76, No. 10, American Institute of Physics, Woodbury, New York, USA. cited by other . | Z.S. Wronski, \"Microstructure and Magnetic Properties of Low-Neodymium Nd-Fe-B-Si Magnets Produced from HP Gas Atomized Powder\", J. Appl. Phys. 69(8), Apr. 1991, pp. 5507-5509. cited by other .', 1, '\\20220510\\6a0a29bd1d4846f4ba65fae028255363.png', NULL, NULL, 1, NULL, NULL, 19, NULL, NULL, NULL, 38877, 38879, 38878, 16);
INSERT INTO `os_patent` VALUES (22758, '希土類磁石用焼結体の製造方法', '稀土类磁铁用烧结体的制造方法', 'JP3841722B2', '【課題】 従来よりも効率よく希土類合金焼結体を原料として再利用することができる希土類合金焼結体の製造方法を提供する。\n\n【解決手段】(a)希土類合金焼結体を水素化粉砕法を用いて粗粉砕することによって第1粗粉末を作製する工程と、(b)第1粗粉末を微粉砕することによって第1微粉末を作製する工程と、(c)希土類合金原料の合金塊を粉砕することによって第2微粉末を作製する工程と、(d)第1微粉末と第2微粉末との混合粉末を作製する工程と、(e)混合粉末を焼結する工程とを包含する。第1微粉末および第2微粉末はいずれも、(LR1-xHRx)2T14A(0≦x<1)で表される組成の主相を有する。', '要解决的问题：提供一种稀土合金烧结体的制造方法，通过该方法可以比现有的稀土合金烧结体更有效地再利用稀土合金烧结体作为原料。解决方案：该制备方法包括步骤（a），其中通过使用水力压缩方法将稀土合金烧结体粉碎以制备第一木墨粉末，步骤（b）其中将第一木粉粉末粉碎以产生第一细粉末，a步骤（c），其中稀土合金原料的合金块被粉碎以产生第二细粉末，步骤（d），其中产生第一细粉末和第二细粉末的粉末混合物，和阶段（e） ）其中粉末混合物是烧结的。第一细粉末和第二细粉末都具有由（LR1-x HRx）2 T14 A（0 <= x <1）表示的组成的主相。', 'JP2002150001', 1022169600, 'JP3841722B2', 1162310400, 1045756800, NULL, 1155830400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 2, 0, 0, 0, NULL, NULL, NULL, '2001163401', 'JP', 991152000, 2, 9, NULL, NULL, 2, 0, 0, 0, 0, NULL, NULL, NULL, '鈴木 毅', NULL, 'JP1999054351A | JP1999189866A', NULL, NULL, 1, '\\20220510\\02fc6ad9ae5d46e8bea0bc12bf9fd585.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 38880, 38882, 38881, 9);
INSERT INTO `os_patent` VALUES (22759, 'Method of making sintered compact for rare earth magnet', '制造稀土磁体烧结体的方法', 'US7056393B2', 'A method of making a sintered body for a rare earth magnet includes the steps of (a) preparing a first coarse powder by coarsely pulverizing a rare earth alloy sintered body by a hydrogen pulverization process, (b) preparing a first fine powder by finely pulverizing the first coarse powder, (c) preparing a second fine powder by pulverizing an alloy block of a rare earth alloy material, and (d) sintering a mixed powder including the first and second fine powders. The first and second fine powders each includes a main phase represented by (LR1-xHRx)2T14A, where T is Fe and/or at least one non-Fe transition metal element; A is boron and/or carbon; LR is at least one light rare earth element; HR is at least one heavy rare earth element; and 0≦x&#x3c;1.', '制造稀土磁体烧结体的方法包括以下步骤：（a）通过氢粉碎法粗粉碎稀土合金烧结体制备第一粗粉，（b）通过细粉碎制备第一细粉第一粗粉，（c）通过粉碎稀土合金材料的合金块制备第二细粉，和（d）烧结包含第一和第二细粉的混合粉末。第一和第二细粉各自包括由（LR1-xHRx）2T14A表示的主相，其中T是Fe和/或至少一种非Fe过渡金属元素; A是硼和/或碳; LR是至少一种轻稀土元素; HR至少是一种重稀土元素;并且0≤x<1。', 'US10/381007', 1022515200, 'US7056393B2', 1149523200, 1075910400, NULL, 1149523200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 8, 2, 0, 0, 0, NULL, NULL, NULL, '2001163401', 'JP', 991152000, 7, 9, NULL, NULL, 13, 23, 1, 1, 0, NULL, '850', NULL, 'SHEEHAN, JOHN P.', NULL, 'JP1988033505A | JP1994096928A | JP1994340902A | US20040050454A1 | US4770723A | US4792368A | US5091020A | US5624503A | US5908513A | US5930582A | US6149861A | US6468365B1 | US6491765B2', 'CN107262687A | CN107262687B | CN107262688A | CN107262688B | CN107275025A | CN107275025B | CN107275029A | CN107275029B | CN205614027U | CN205718441U | US10395823B2 | US11270841B2 | US20110052799A1 | US20150125336A1 | US20150243416A1 | US9044834B2 | US9067284B2 | US9095940B2 | US9144865B2 | US9336932B1 | US9672981B2 | US9837207B2 | US9920406B2', NULL, 1, '\\20220510\\7e13a8fc4c1141e9af3c0d66a412bfc3.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 38883, 38882, 38881, 9);
INSERT INTO `os_patent` VALUES (22760, 'ナノコンポジットバルク磁石およびその製造方法', '纳米复合材料块体磁体及其制造方法', 'JP4089304B2', '【課題】バルク成形体の密度が高く、且つ、耐食性に優れたR-Fe-B系のナノコンポジットバルク磁石の製造方法を提供する。\n\n【解決手段】粒径が53μm以下の第1粒子を10質量%以上含む、R-Fe-B系のナノコンポジット磁石用急冷合金粉末を準備する工程と、前記急冷合金粉末を熱間成形することによってバルク成形体を得る工程とを包含する。\n\n【選択図】 なし', '要解决的问题：提供一种R-Fe-B系纳米复合材料块体磁体的制造方法，其具有作为整体模具的高密度和优异的抗腐蚀性。 ŽSOLUTION：该方法包括制备包含10质量％直径为53μm或更小的第一颗粒的R-Fe-B系统的快速冷却的纳米复合磁性合金粉末的步骤，以及通过热成型获得块状模具的步骤上述淬火纳米复合磁性合金粉末。 Ž', 'JP2002168294', 1023638400, 'JP4089304B2', 1211904000, 1074096000, NULL, 1204819200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 0, 2, 2, 2, 0, NULL, NULL, NULL, '右田 勝則', NULL, NULL, 'CN102379013A | CN102379013B', NULL, 1, '\\20220510\\bcd325fce46b4c6d9d0964013843c449.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 38884, 38886, 38885, 3);
INSERT INTO `os_patent` VALUES (22761, '希土類磁石およびその製造方法', '稀土磁铁及其制造方法', 'JP3909707B2', '希土類磁石において、添加したＤｙなどの重希土類元素ＲＨを無駄なく有効に活用し、保磁力を効果的に向上させる。まず、Ｒ−Ｔ−Ｑ系希土類磁石用原料合金（Ｒは希土類元素、Ｔは遷移金属元素、ＱはＢ、Ｃ、Ｎ、Ａｌ、Ｓｉ、およびＰからなる群から選択された少なくとも１種の元素）であって、希土類元素Ｒとして、ＮｄおよびＰｒからなる群から選択された少なくとも１種のＲＬと、Ｄｙ、Ｔｂ、およびＨｏからなる群から選択された少なくとも１種のＲＨとを含有する合金の溶湯を用意する。上記合金の溶湯を急冷して、凝固合金を作製した後、この急冷凝固合金を４００℃以上８００℃未満の温度範囲で５分以上１２時間以下保持する熱処理を行う。この熱処理でＲＨを粒界相から主相へ移動させることができ、保磁力が増加する。', '在稀土磁体中，有效地使用添加的Dy等重稀土元素RH而没有浪费，并且有效地提高了矫顽力。首先，用于R-T-Q基稀土磁体的原料合金（R是稀土元素，T是过渡金属元素，Q是选自B，C，N，Al，Si和P中的至少一种）含有选自Nd和Pr的至少一种RL的稀土元素R，和选自Dy，Tb和Ho的至少一种RH准备合金熔体。在将上述合金的熔融金属淬火以产生凝固合金之后，进行热处理以将快速凝固的合金在400℃或更高且低于800℃的温度范围内保持5分钟或更长且12小时或更短。通过该热处理，RH可以从晶界相移动到主相，并且矫顽力增加。', 'JP2003507836', 1024416000, 'JP3909707B2', 1177430400, 1097683200, NULL, 1170345600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 2, 0, 0, 0, NULL, NULL, NULL, '2001189673', 'JP', 993139200, 13, 15, NULL, NULL, 13, 0, 0, 0, 0, NULL, NULL, NULL, '山田 正文', NULL, 'JP1985145357A | JP1990298003A | JP1991236202A | JP1994096928A | JP1994124824A | JP1997017677A | JP1997020953A | JP1998102215A | JP1998199718A | JP1998289813A | JP2001059144A | JP2001060504A | JP2001155913A', NULL, NULL, 1, '\\20220510\\e678d2f9ea01479dacf5ef6ceb09b45c.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 38887, 38889, 38888, 15);
INSERT INTO `os_patent` VALUES (22762, 'Rare earth magnet and method for production thereof', '稀土磁铁及其制造方法', 'US7258751B2', 'In a rare earth magnet, an added heavy rare earth element RH such as Dy is effectively used without any waste, so as to effectively improve the coercive force. First, a molten alloy of a material alloy for an R-T-Q rare earth magnet (R is a rare earth element, T is a transition metal element, and Q is at least one element selected from the group consisting of B, C, N, Al, Si, and P), the rare earth element R containing at least one kind of element RL selected from the group consisting of Nd and Pr and at least one kind of element RH selected from the group consisting of Dy Tb, and Ho is prepared. The molten alloy is quenched, so as to produce a solidified alloy. Thereafter, a thermal treatment in which the rapidly solidified alloy is held in a temperature range of 400° C. or higher and lower than 800° C. for a period of not shorter than 5 minutes nor longer than 12 hours is performed. By the thermal treatment, the element RH can be moved from the grain boundary phase to the main phase, so that the coercive force is increased.', '在稀土磁体中，有效地使用添加的重稀土元素RH如Dy而没有任何浪费，从而有效地提高矫顽力。首先，用于RTQ稀土磁体的材料合金的熔融合金（R是稀土元素，T是过渡金属元素，Q是选自B，C，N，Al中的至少一种元素） ，Si和P），制备含有选自Nd和Pr中的至少一种元素RL和至少一种选自Dy Tb和Ho的元素RH的稀土元素R. 。将熔融合金淬火，以产生凝固合金。之后，进行热处理，其中快速凝固的合金在400℃或更高且低于800℃的温度范围内保持不短于5分钟且不长于12小时的时间。通过热处理，元素RH可以从晶界相移动到主相，从而矫顽力增加。', 'US10/480309', 1024416000, 'US7258751B2', 1187625600, 1093449600, NULL, 1187625600, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 2, 0, 0, 0, NULL, NULL, NULL, '2001189673', 'JP', 993139200, 13, 15, NULL, NULL, 22, 29, 2, 2, 0, NULL, '849', NULL, 'SHEEHAN, JOHN P.', NULL, 'JP1985145357A | JP1986253805A | JP1990298003A | JP1991222304A | JP1993033076A | JP1994096928A | JP1994124824A | JP1996264363A | JP1997017677A | JP1998102215A | JP1998289813A | JP2001059144A | JP2001060504A | JP2001155913A | US20060016515A1 | US5181973A | US5383978A | US5411608A | US5908513A | US6322637B1 | US6403024B1 | US6491765B2', 'CN104240886A | CN104240886B | CN104240887A | CN104240887B | CN104240888A | CN104240888B | CN104249156A | CN104249156B | CN104252937A | CN104252937B | CN104252938A | CN104252938B | CN104252939A | CN104252939B | CN104252940A | CN104252940B | CN108389673A | US10381141B2 | US10395823B2 | US11270841B2 | US20080251159A1 | US20100200405A1 | US7585378B2 | US8268264B2 | US9044834B2 | US9067284B2 | US9095940B2 | US9144865B2 | US9336932B1', NULL, 1, '\\20220510\\6aa503dc404b428b847ad6eb4ab9b6b2.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 38887, 38889, 38888, 15);
INSERT INTO `os_patent` VALUES (22763, 'Apparatus for subjecting rare earth alloy to hydrogenation process and method for producing rare earth sintered magnet using the apparatus', '用于使稀土合金进行氢化处理的装置和使用该装置生产稀土烧结磁体的方法', 'US7018485B2', 'An apparatus for subjecting a rare earth alloy block to a hydrogenation process includes a casing, gas inlet and outlet ports, a member arranged to produce a gaseous flow, and a windbreak plate. The casing defines an inner space for receiving a container. The container includes an upper opening and stores the rare earth alloy block therein. A hydrogen gas and an inert gas are introduced into the inner space through the gas inlet port, and are exhausted from the inner space through the gas outlet port. The gaseous flow is produced by a fan, for example, in the inner space. The windbreak plate is disposed upstream with respect to the gaseous flow that has been produced inside the inner space. Also, the windbreak plate reduces a flow rate of the gaseous flow that has been produced near the upper opening of the container.', '一种使稀土合金块经受氢化过程的装置，包括壳体，气体入口和出口，设置成产生气流的构件，和防风板。壳体限定用于容纳容器的内部空间。容器包括上开口并在其中存储稀土合金块。氢气和惰性气体通过进气口引入内部空间，并通过气体出口从内部空间排出。气流由例如内部空间中的风扇产生。防风板相对于在内部空间内产生的气流设置在上游。而且，防风板减少了在容器的上部开口附近产生的气流的流速。', 'US10/381006', 1024934400, 'US7018485B2', 1143475200, 1072886400, NULL, 1143475200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 18, 4, 0, 0, 0, NULL, NULL, NULL, '2001198202', 'JP', 993744000, 8, 9, NULL, NULL, 16, 13, 2, 4, 2, NULL, '850', NULL, 'SHEEHAN, JOHN P.', NULL, 'JP1994346113A | JP1995331304A | JP1997031609A | JP2000303107A | US4760966A | US4770723A | US4792368A | US4853045A | US5143560A | US5338371A | US5383978A | US5993732A | US6113846A | US6247660B1 | US6403024B1 | US6709533B2', 'US10395823B2 | US11270841B2 | US20050016632A1 | US20080113210A1 | US20130049910A1 | US7550047B2 | US7892365B2 | US8823478B2 | US9044834B2 | US9067284B2 | US9095940B2 | US9144865B2 | US9336932B1', 'EP 992309 A2(Sumitomo Special Metals Co., LTD) Apr. 12, 2000 & JP 2000-178612 A. | JP 2000-303107 A (Sumitomo Special Metals Co., LTD.) Oct. 31, 2000 & DE 10007449 A.', 1, '\\20220510\\d6a3c5602fba4951b9020a27f0c71863.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 38890, 38892, 38891, 9);
INSERT INTO `os_patent` VALUES (22764, 'Method for producing rare earth sintered magnets', '稀土烧结磁铁的制造方法', 'US7014811B2', 'A method for producing rare earth sintered magnets includes the steps of pressing and compacting an alloy powder for the rare earth sintered magnets, thereby preparing a plurality of green compacts, arranging the green compacts on a receiving plane in a direction in which a projection area of each of the green compacts onto the receiving plane is not maximized, and heating the green compacts, thereby sintering the green compacts and obtaining a plurality of sintered bodies.', '制造稀土烧结磁体的方法包括以下步骤：压制和压制用于稀土烧结磁体的合金粉末，从而制备多个压坯，将压坯布置在接收平面上的投影区域的投影区域中。在接收平面上的每个生坯没有最大化，并且加热生坯，从而烧结生坯并获得多个烧结体。', 'US10/381184', 1024934400, 'US7014811B2', 1142870400, 1064419200, NULL, 1142870400, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 3, 0, 0, 0, NULL, NULL, NULL, '2001200375', 'JP', 994003200, 7, 8, NULL, NULL, 20, 0, 0, 0, 0, NULL, '850', NULL, 'SHEEHAN, JOHN P.', NULL, 'CN1258919A | JP1983141305A | JP1986119009A | JP1986125114A | JP1986221304A | JP1992154903A | JP1995161560A | JP1995226328A | JP1998270276A | JP1999071174A | JP2000315611A | US4770723A | US4792368A | US4818305A | US5383978A | US5958285A | US6461565B2 | US6464931B1 | US6548014B2 | US6649124B2', NULL, NULL, 1, '\\20220510\\76fb1edb4c9e4aca86ba76d0a4b569a0.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 38893, 38895, 38894, 8);
INSERT INTO `os_patent` VALUES (22765, 'Vorrichtung, um eine Seltenerdmetall-Legierung einem Hydrierungsverfahren zu unterziehen', '用于使稀土金属合金经受氢化过程的装置', 'DE10291914B3', 'Vorrichtung, mit der ein Seltenerdmetall-Legierungsblock oder ein Seltenerdmetall-Legierungsflake einem Hydrierungs-Verfahren unterworfen werden kann, die umfasst: ein Gehäuse (30), das einen inneren Hohlraum (20) für die Aufnahme eines Behälters (10) definiert, wobei der Behälter (10) eine Bodenfläche, Seitenflächen (12) und eine obere Öffnung (10a) aufweist und vorgesehen ist, um den Seltenerdmetall-Legierungsblock oder den Seltenerdmetall-Legierungsflake darin zu lagern, wobei eine Atmosphäre im Innern des inneren Hohlraums (20) so einstellbar ist, dass sie in einem Unterdruck-Zustand vorliegt; eine Gaszuführungs-Einrichtung, die vorgesehen ist, um in den inneren Hohlraum (20) des Gehäuses (30) ein Gas einzuleiten, \n\ngekennzeichnet durch \n\neine Windschutzplatte (50) umfassend einen Abschirmungsabschnitt (50b), der in einer vertikalen Höhe angeordnet ist, die im Wesentlichen derjenigen der oberen Öffnung (10a) des Behälters (10) entspricht und \n\nmindestens eine Öffnung (50a), die gegenüber mindestens einer der Seitenflächen (12) des Behälters (10) angeordnet ist, \n\nwobei die Windschutzplatte (50) die Strömungsgeschwindigkeit eines Gasstromes, der in...', '用于对稀土合金块或稀土合金薄片进行加氢处理的设备,其包括:壳体(30),其限定用于容纳容器(10)的内部空腔(20),该容器 (10)具有底面,侧面(12)和上部开口(10a),并且被设置用于在其中存储稀土合金块或稀土合金薄片,以这种方式可调节内腔(20)内部的气氛。 它处于负压状态; 提供气体供应装置,以将气体引入壳体(30)的内​​腔(20)中,\n\n 标有\n\n 挡风玻璃板(50),其包括布置在垂直高度上的防护部分(50b),该高度基本上对应于容器(10)的上部开口(10a)的高度,并且\n\n 与容器(10)的至少一个侧面(12)相对设置的至少一个开口(50a),\n\n 挡风玻璃板(50)是气流的流量,它是...', 'DE10291914', 1024934400, 'DE10291914B3', 1364400000, 1055347200, NULL, 1364400000, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B3', NULL, NULL, 21, 4, 0, 0, 0, NULL, NULL, NULL, '2001198202', 'JP', 993744000, 8, 9, NULL, NULL, 3, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, 'DE10007449A1 | DE2448714A1 | EP0992309A2', NULL, NULL, 1, '\\20220510\\61beac1f5a9345a6a4d96d9878e6e931.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 38890, 38892, 38891, 9);
INSERT INTO `os_patent` VALUES (22766, '磁界形成装置', '磁场形成装置', 'JP3792181B2', '【課題】  磁石を用いて、強度の勾配が大きい磁界を形成する。\n\n【解決手段】  磁界形成装置は、ヨーク材10と、ヨーク材10に固定され磁気回路を形成する第1の一対の磁石12a,12bであって、第1の一対の磁石のうちの一方の磁石のN極から第1の一対の磁石のうちの他方の磁石のS極に向かう第1の磁束を発生する第1の一対の磁石12a,12bと、第1の一対の磁石の近傍において第1の一対の磁石に対して並列して配置されるようにヨーク材10に固定され、磁気回路を形成する第2の一対の磁石14a,14bであって、第2の一対の磁石のうちの一方の磁石のN極から第2の一対の磁石のうちの他方の磁石のS極に向かう第2の磁束を発生する第2の一対の磁石14a,14bとを備える。所定の面において、第1の磁束の向きA1と、第2の磁束の向きA2とが逆向きである。', '要解决的问题：通过使用磁铁形成具有大的强度倾斜的磁场。解决方案：磁场形成装置具有磁轭材料10，一对第一磁体12a，12b，其固定到磁轭材料10并形成磁路，并产生从一个磁体的N极开始的第一磁通量。一对第一磁铁朝向一对第一磁铁的另一磁铁的S极，一对第二磁铁14a，14b固定在轭铁材料10上，该轭铁材料10与一对第一磁铁相邻设置，靠近一对第一磁铁并且形成磁路，并且产生从该对第二磁体中的一个磁体的N极朝向该对第二磁体中的另一个磁体的S极行进的第二磁通量。在规定的表面中，第一磁通的方向A1和第二磁通的方向A2是相反的方向。', 'JP2002202037', 1026316800, 'JP3792181B2', 1152028800, 1048780800, NULL, 1144944000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, '2001212038', 'JP', 994867200, 2, 2, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, '桑原 清', NULL, 'JP2001012544A', NULL, NULL, 1, '\\20220510\\e465b5fc3b844d5e9f720df96e12c681.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 38896, 38898, 38897, 2);
INSERT INTO `os_patent` VALUES (22767, 'プレス装置および磁石の製造方法', '压制设备和制造磁铁的方法', 'JP4134616B2', '【課題】 配向磁界中で粉末プレスを実行する際、粉末配向の乱れを抑制する。\n\n【解決手段】 プレス装置10は、キャビティを形成する貫通孔12aを有するダイ12と、キャビティ内に充填された磁性粉末18をプレスするための第1加圧面14aおよび第2加圧面16aと、キャビティ内の磁性粉末18に配向磁界を印加する磁界発生手段とを備える。第1および第2加圧面14aおよび16aの少なくとも一方は、ビッカース硬度が200超450以下の材料で形成された領域を有する。', '要解决的问题：在定向磁场中进行粉末压制时，要抑制粉末取向的紊乱。\n\n一种压制设备，包括具有用于形成空腔的通孔的模具，第一加压表面a和用于挤压填充在空腔中的磁粉18的第二加压表面a，和磁场产生装置，用于在磁场产生装置中向磁粉18施加定向磁场。第一和第二压力表面14a和16a中的至少一个具有由维氏硬度大于200且小于或等于450的材料形成的区域。', 'JP2002206487', 1026748800, 'JP4134616B2', 1219161600, 1057075200, NULL, 1213286400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 3, 0, 0, 0, NULL, NULL, NULL, '2001306406', 'JP', 1001952000, 12, 12, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, '冨岡 和人', NULL, 'JP1998270276A | JP2001192705A | JP2001342502A | JP2002239791A', NULL, NULL, 1, '\\20220510\\2f5de984c58740008b8215a6c3c2d193.png', NULL, NULL, 1, NULL, NULL, 15, NULL, NULL, NULL, 38899, 38901, 38900, 12);
INSERT INTO `os_patent` VALUES (22768, '焼結磁石の製造方法', '制造烧结磁体的方法', 'JP3713254B2', '【課題】 希土類焼結磁石の加工時間および加工コストを低減する。\n\n【解決手段】 ダイヤモンドなどの砥粒が表面に固着されたワイヤソー4を用い、焼結前の時点で磁石粉末の成形体1を切断加工する。', '要解决的问题:减少稀土烧结磁铁的处理时间和处理成本。\n\n诸如金刚石的磨粒用于在烧结时切割磁体粉末的模制体1,使用固定到表面的线锯4。', 'JP2002215946', 1027526400, 'JP3713254B2', 1131465600, 1066924800, NULL, 1124985600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 22, 5, 0, 0, 0, NULL, NULL, NULL, '2001230974 | 2002028525', 'JP | JP', 996508800, 2, 12, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '山田 正文', NULL, 'JP1978000899A | JP1996181028A | JP1997059666A | JP1998193322A | JP1999329877A | JP2001138205A', NULL, NULL, 1, '\\20220510\\3f0f58f0056a4654b737c4bff0f3a7cf.png', NULL, NULL, 1, NULL, NULL, 11, NULL, NULL, NULL, 38902, 38904, 38903, 12);
INSERT INTO `os_patent` VALUES (22769, '希土類磁石の着磁方法および希土類磁石', '稀土磁体和稀土磁体的磁化方法', 'JP4304930B2', '【課題】 互いに逆方向磁化された領域を形成するように円筒状に配置された磁石を着磁する際に、領域の境界付近を従来よりも確実に所定の方向に着磁させる着磁方法を提供する。\n\n【解決手段】 円筒22aを形成するように配置された希土類磁石22を用意する工程と、希土類磁石22に第1外部磁界H1を印加することによって、円筒22aの内側から外側に向かって磁化されている第1領域R1と外側から内側に向かって磁化されている第2領域R2とを形成する第1着磁工程と、第1領域R1と第2領域R2との境界に、第1着磁工程で印加されていた外部磁界成分の方向と0°超50°未満の角度をなす方向の外部磁界成分が印加されるように第2外部磁界H2を印加する第2着磁工程とを包含する。', '要解决的问题：当分别磁化排列成圆柱形状的磁体以形成区域时，提供一种确保在磁体区域之间的边界附近可靠地磁化部件的方法，该方法比通常更加确定。被磁化为相反的方向。解决方案：该磁化方法包括制备稀土磁体22的制备方法，所述稀土磁体22布置成形成圆柱体22a;形成第一区域R1的第一磁化过程，该第一区域R1被磁化以产生从气缸22a内部向其外侧延伸的磁通量，以及第二区域R2，其被磁化以产生从气缸外部延伸的磁通量22a朝内;第二磁化过程是施加第二外部磁场H2以施加外部磁场分量，该外部磁场分量的方向形成大于0度的角度。低于50度将在第一磁化过程中施加的外部磁场分量的外部磁场分量施加到第一区域R1和第二区域R2之间的边界。', 'JP2002217839', 1027612800, 'JP4304930B2', 1248796800, 1050595200, NULL, 1242316800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 10, 2, 0, 0, 0, NULL, NULL, NULL, '2001230192', 'JP', 996422400, 2, 8, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '田中 純一', NULL, NULL, NULL, NULL, 1, '\\20220510\\d649014d84f84bca80f1536717e0a41c.png', NULL, NULL, 1, NULL, NULL, 11, NULL, NULL, NULL, 38905, 38907, 38906, 8);
INSERT INTO `os_patent` VALUES (22770, 'Method for manufacturing sintered magnet', '烧结磁铁的制造方法', 'US7045093B2', 'A method for manufacturing a sintered magnet includes the steps of producing a green compact of powder for the sintered magnet, machining the green compact with a wire-saw, and sintering the green compact.', '制造烧结磁体的方法包括以下步骤：制造用于烧结磁体的粉末生坯，用线锯加工生坯，并烧结该生坯。', 'US10/399252', 1027612800, 'US7045093B2', 1147708800, 1078934400, NULL, 1147708800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 23, 5, 0, 0, 0, NULL, NULL, NULL, '2001230974 | 2002028525', 'JP | JP', 996508800, 9, 12, NULL, NULL, 14, 14, 2, 2, 1, NULL, '849', NULL, 'MAI, NGOCLAN T.', NULL, 'EP0983831A2 | JP1988033505A | JP1996064451A | JP1996181028A | JP1997059666A | JP1998193322A | JP1999329877A | JP2001138205A | US4457851A | US5201305A | US5383978A | US6054422A | US6194068B1 | US6381830B1', 'US10395823B2 | US11270841B2 | US20100244608A1 | US20130043218A1 | US20140182776A1 | US20160184908A1 | US8497613B2 | US9044834B2 | US9067284B2 | US9095940B2 | US9111745B2 | US9144865B2 | US9336932B1 | US9499920B2', 'Examiner: Masafumi Yamada, Notice of Reasons for Rejections for Patent Application No. JP-2002-215946, Mailed Oct. 19, 2004. cited by other.', 1, '\\20220510\\b9a0a1f6cc5b46efb56bac35f4190cb7.png', NULL, NULL, 1, NULL, NULL, 15, NULL, NULL, NULL, 38908, 38904, 38903, 12);
INSERT INTO `os_patent` VALUES (22771, 'Verfahren zur Herstellung eines Sintermagneten', '制造烧结磁体的方法', 'DE10296690B4', 'A method for manufacturing a sintered magnet includes the steps of producing a green compact of powder for the sintered magnet, machining the green compact with a wire-saw, and sintering the green compact.', '制造烧结磁体的方法包括以下步骤：制造用于烧结磁体的粉末生坯，用线锯加工生坯，并烧结该生坯。', 'DE10296690', 1027612800, 'DE10296690B4', 1210176000, 1082563200, NULL, 1210176000, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B4', NULL, NULL, 32, 5, 0, 0, 0, NULL, NULL, NULL, '2001230974 | 2002028525', 'JP | JP', 996508800, 9, 12, NULL, NULL, 9, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, 'DE10045770A1 | DE10157433A1 | DE4206007A1 | EP0983831A2 | JP1986125114A | JP1996064451A | JP1996181028A', NULL, NULL, 1, '\\20220510\\af8c43f5740847fbb0aa21a3d6faf632.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 38908, 38904, 38903, 12);
INSERT INTO `os_patent` VALUES (22772, 'Method of magnetizing rare-earth magnet and rare-earth magnet', '磁化稀土磁体和稀土磁体的方法', 'US7232495B2', 'The method of the present invention includes a step of preparing a rare earth magnet 22 disposed for forming a cylinder 22a, a first magnetizing step of applying a first external magnetic field H1 to the rare earth magnet 22, thereby forming a first region R1 magnetized from an inner side to an outer side of the cylinder 22a and a second region R2 magnetized from the outer side to the inner side, and a second magnetizing step of applying a second external magnetic field H2 so that an external magnetic field component forming an angle of more than 0° and less than 50° with a direction of the external magnetic field component applied in the first magnetizing step to a boundary between the first region R1 and the second region R2.', '本发明的方法包括制备稀土磁体22的步骤，该稀土磁体22设置用于形成圆柱体22a，第一磁化步骤是将第一外部磁场H1施加到稀土磁体22，从而形成磁化的第一区域R1。气缸22a的外侧的内侧和从外侧向内侧磁化的第二区域R2，以及施加第二外部磁场H2的第二磁化步骤，使得外部磁场分量形成角度为在第一磁化步骤中施加的外部磁场分量的方向超过0°且小于50°，到达第一区域R1和第二区域R2之间的边界。', 'US10/485210', 1027872000, 'US7232495B2', 1182182400, 1098288000, NULL, 1182182400, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 2, 0, 0, 0, NULL, NULL, NULL, '2001230192', 'JP', 996422400, 6, 8, NULL, NULL, 7, 1, 0, 0, 0, NULL, '849', NULL, 'SHEEHAN, JOHN P.', NULL, 'JP1987149109A | JP1998270247A | JP2002124414A | US5383978A | US6153952A | US6432158B1 | US6448763B1', 'US20070171017A1', NULL, 1, '\\20220510\\ec40f82e2db8456496eaa245ab7c5a3a.png', NULL, NULL, 1, NULL, NULL, 15, NULL, NULL, NULL, 38909, 38907, 38906, 8);
INSERT INTO `os_patent` VALUES (22773, '永久磁石の製造方法', '永磁体的制造方法', 'JP4265168B2', '【課題】高耐食性や絶縁性などの各種機能を希土類系永久磁石に付与することができる、公害問題がなく、地球環境に優しい永久磁石の製造方法を提供すること。\n\n【解決手段】無機質微粒子と樹脂とからなる粉体塗料を使用して静電粉体塗装により希土類系永久磁石の表面に無機質微粒子分散樹脂被膜を形成することを特徴とする。\n\n【選択図】 なし', '要解决的问题：提供一种对地球环境温和无污染的永磁体的制造方法，用于向稀土基永磁体施加诸如高耐腐蚀性和绝缘性的各种功能。。ŽSOLUTION：通过使用由矿物颗粒和树脂制成的粉末涂料，在静电粉末涂覆步骤中将矿物微小颗粒分散膜施加到稀土基永磁体的表面上。Ž', 'JP2002230660', 1028649600, 'JP4265168B2', 1242748800, 1078329600, NULL, 1235664000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 6, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '酒井 朋広', NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 38910, 38912, 38911, 2);
INSERT INTO `os_patent` VALUES (22774, '磁場中熱処理炉及びそれを用いた熱処理方法', '磁场中的热处理炉和使用其的热处理方法', 'JP4305810B2', '【課題】従来にない設備コスト、製造コスト安で、かつ安全性の高い、低漏洩磁場の磁場中熱処理を提供する。\n\n【解決手段】隣接する磁石が互いに異なる磁化方向となし、1.1 T以上の残留磁束密度及び1114 kA/m (14 kOe) 以上の保磁力を有する永久磁石セグメントを複数個組み合わせてリング状に構成したリング状永久磁石組立体1からなる磁場発生手段と、前記リング状永久磁石組立体1の中央空洞部20内に位置し、外側から順に冷却手段3と、加熱手段5と、複数の被熱処理品を保持する熱処理用保持具10を含む熱処理容器6とを備えた熱処理手段とを具備し、前記リング状永久磁石組立体は120 mm以上の内径及び300 mm以上の外径を有し、かつ100 mm以上の軸線方向長さを有し、磁場発生手段の軸線方向磁場中心と、前記熱処理容器内に挿入される複数の被熱処理品の集合体の軸線方向中心とをほぼ一致させる磁場中熱処理炉である。\n\n【選択図】    図1', '要解决的问题：在低磁场中操作的磁场中提供高度安全的热处理炉，其安装成本和制造成本低于现有技术。ŽSOLUTION：热处理炉的改造如下。相邻的磁体具有彼此不同的磁化方向。提供磁场产生装置，其由环形永磁体组件1构成，该环形永磁体组件1通过组合多个永磁体段构成环，每个永磁体段具有1.1T或更高的剩余磁通密度和1114kA / m的压缩力（14kOe）或更高，并且热处理装置位于环形永磁体组件1的中心空腔部分20中，并且由外部依次由冷却装置3，加热装置5和热处理构成。容器6包括用于保持多个工件的热处理保持工具10。环形永磁体组件的内径为120mm或更大，外径为120mm或更大。此外，磁场产生装置的轴向磁场中心与插入热处理容器的多个工件的组件的轴心之间基本上重合。Ž', 'JP2002229524', 1028649600, 'JP4305810B2', 1248796800, 1078329600, NULL, 1242316800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '田中 純一', NULL, NULL, NULL, NULL, 1, '\\20220510\\d2072f675de94b07a7a9fb9b43d393e6.png', NULL, NULL, 1, NULL, NULL, 11, NULL, NULL, NULL, 38913, 38915, 38914, 2);
INSERT INTO `os_patent` VALUES (22775, 'Nanocomposite magnet and method for producing same', '纳米复合磁体及其制造方法', 'US6890392B2', 'A method of making a material alloy for an iron-based rare earth magnet includes the step of forming a melt of an alloy with a composition of (Fe1-mTm)100-x-y-z-n(B1-pCp)xRyTi2Mn. T is Co and/or Ni; R is at least one element selected from Y (yttrium) and the rare earth elements; and M is at least one element selected from Al, Si, V, Cr, Mn, Ni, Cu, Zn, Ga, Zr, Nb, Mo, Ag, Hf, Ta, W, Pt, Au and Pb, wherein the following inequalities are satisfied: 10&#x3c;x≦25 at %, *6≦y&#x3c;10 at %, 0.5≦z≦12 at %, 0≦m≦0.5, 0≦n≦10 at % and 0≦p≦0.25. Next, the melt is fed onto a shoot with a guide surface tilted at about 1 degree to about 80 degrees with respect to a horizontal plane, thereby moving the melt onto a melt/roller contact region. The melt is then rapidly cooled using a chill roller to make a rapidly solidified alloy including an R2Fe14B phase.', '制备用于铁基稀土磁体的材料合金的方法包括形成具有（Fe1-mTm）100-x-y-z-n（B1-pCp）xRyTi2Mn的组成的合金熔体的步骤。 T是Co和/或Ni; R是选自Y（钇）和稀土元素中的至少一种元素; M是选自Al，Si，V，Cr，Mn，Ni，Cu，Zn，Ga，Zr，Nb，Mo，Ag，Hf，Ta，W，Pt，Au和Pb中的至少一种元素，其中以下满足不等式：10 <x≤25at％，*6≤y<10at％，0.5≤z≤12at％，0≤m≤0.5,0≤n≤10at％且0≤p≤0.25。接下来，将熔体进料到具有引导表面的枝条上，所述引导表面相对于水平面倾斜约1度至约80度，从而将熔体移动到熔体/辊子接触区域上。然后使用冷却辊快速冷却熔体，以制备包含R2Fe14B相的快速凝固的合金。', 'US10/222822', 1029686400, 'US6890392B2', 1115654400, 1043856000, NULL, 1115654400, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 46, 3, 0, 0, 0, NULL, NULL, NULL, '2000344567 | 2000352306 | 2001054252 | 2001271414 | 2001307819', 'JP | JP | JP | JP | JP', 974044800, 24, 47, NULL, NULL, 47, 22, 6, 6, 20, NULL, '850', NULL, 'SHEEHAN, JOHN P.', NULL, 'DE19739959A1 | EP0632471A2 | EP1018751A1 | EP1061532A1 | JP1984046008A | JP1985009852A | JP1986140350A | JP1989000703A | JP1989007501A | JP1989007502A | JP1989100242A | JP1990298003A | JP1991260018A | JP1991261104A | JP1995122412A | JP1996162312A | JP1996167515A | JP1997155507A | JP1997155513A | JP1998088294A | JP1999071646A | JP1999323509A | JP2000079449A | JP2000079451A | US4770723A | US4802931A | US4836868A | US4851058A | US4935074A | US5022939A | US5049208A | US5209789A | US5666635A | US5725792A | US5905424A | US6022424A | US6172589B1 | US6183571B1 | US6183572B1 | US6280536B1 | US6302972B1 | US6332933B1 | US6352599B1 | WO1999021196A1 | WO2000003403A1 | WO2000045397A1 | WO2000052713A1', 'GB2507887A | US11065685B2 | US20030183305A1 | US20040016477A1 | US20040020569A1 | US20040051614A1 | US20040099346A1 | US20040194856A1 | US20050040923A1 | US20060081308A1 | US20080124546A1 | US20080206559A1 | US20090085416A1 | US7004228B2 | US7208097B2 | US7217328B2 | US7261781B2 | US7297213B2 | US7507302B2 | US7547365B2 | US7847460B2 | US8713906B2', 'G. Ya. Merkulova, et al., \"The temperature dependence of coercivity in nanocrystalline Nd-Fe-B-(TiC)magnets\", Journal of Applied Physics, Vo.87 No. 9, May 2000, pp. 4738-4740. | H. Chiriac, et al., \"Nd8Fe73Co5Hf2B12 strip cast alloy\", Journal of Applied Physics, vol. 87 No. 9, May 2000, pp. 5338-5340. | H. Chiriac, et al., \"Nd<SUB>8</SUB>Fe<SUB>73</SUB>Co<SUB>5</SUB>Hf<SUB>2</SUB>B<SUB>12 </SUB>strip cast alloy\", Journal of Applied Physics, vol. 87 No. 9, May 2000, pp. 5338-5340. | J. Bernardi, et al., \"Microstructural analysis of strip cast Nd-Fe-B alloys for high (BH) max magnets\", Journal of Applied Physics, vol. 83 No. 11, Jun. 1998, pp. 6396-6398. | Q. Chen, et al., \"A Study on the Phase Transformation and Exchange-coupling of (Nd0&#xb7;95La0&#xb7;05)9.5 Feba1C05Nb2B10&#xb7;5 Nanaocomposites,Materials Research Society Symposium Proceedings\", Vo.577, Apr. 1999,pp. 209-219. | Q. Chen, et al., \"A Study on the Phase Transformation and Exchange-coupling of (Nd<SUB>0.95</SUB>La<SUB>0.05</SUB>)<SUB>9.5 </SUB>Fe<SUB>ba1</SUB>C<SUB>05</SUB>Nb2B<SUB>10.5 </SUB>Nanaocomposites,Materials Research Society Symposium Proceedings\", Vo.577, Apr. 1999,pp. 209-219. | R. Coehoorn, et al., \"Novel Permanent Magnetic Materials Made by Rapid Quenching\", Journal de Physique, C8, Dec. 1998, pp. 669-670. | R. Hermann, et al., \"Growth kinetics in undercooled Nd-Fe-B alloys with carbon and Ti or Mo additions, Journal of Magnetism and Magnetic Materials\", Vo.213 Nos. 1-2, Apr. 2000, pp. 82-86. | U.S. Appl. No. 09/863,902, H.Kanekiyo, et al., \"Permanent Magnet Including Multiple Ferromagnetic Phases and Method for Producing the Magnet\", filed May 24, 2001. | W.C. Chang, et al., \"High performance &#x3b1;-Fe/Nd2Fe14B-type nancomposites\", Applied Physics Letters, vol., 72 No. 1, Jan. 1998, pp. 121-123. | W.C. Chang, et al., \"High performance &#x3b1;-Fe/R2Fe14 B-type nanocomposites with nominal compositions of (Nd, La)9.5Fe78-xCoxCr2B10&#xb7;5 (x=0-10), Journal of Magnetism and Magnetic Materials\", Vo. 189 No. 1, Oct. 1998, pp. 55-61. | W.C. Chang, et al., \"High performance alpha-Fe/Nd<SUB>2</SUB>Fe<SUB>14</SUB>B-type nancomposites\", Applied Physics Letters, vol., 72 No. 1, Jan. 1998, pp. 121-123. | W.C. Chang, et al., \"High performance alpha-Fe/R<SUB>2</SUB>Fe<SUB>14 </SUB>B-type nanocomposites with nominal compositions of (Nd, La)<SUB>9.5</SUB>Fe<SUB>78-x</SUB>Co<SUB>x</SUB>Cr<SUB>2</SUB>B<SUB>10.5 (x=0-10</SUB>), Journal of Magnetism and Magnetic Materials\", Vo. 189 No. 1, Oct. 1998, pp. 55-61. | W.C. Chang, et al., \"The Effects of Refractory Metals on the Magnetic Properties Of &#x3b1;-Fe/R2Fe14B-Type Nanocomposites\", IEEE, Transactions on Magnetics, vol. 35,No. 5, Sep. 1999, pp. 3265-3267. | W.C. Chang, et al., \"The Effects of Refractory Metals on the Magnetic Properties Of alpha-Fe/R<SUB>2</SUB>Fe<SUB>14</SUB>B-Type Nanocomposites\", IEEE, Transactions on Magnetics, vol. 35,No. 5, Sep. 1999, pp. 3265-3267. | W.C. Chang, et al., \"The effect of boron and rare earth contents on the magnetic properties of La and Cr substituted &#x3b1;-Fe/R2Fe14B-Type Nanocomposites\", Journal of Applied Physics, vol. 83 No. 11, Jun. 1998pp. 6271-6273. | W.C. Chang, et al., \"The effect of boron and rare earth contents on the magnetic properties of La and Cr substituted alpha-Fe/R<SUB>2</SUB>Fe<SUB>14</SUB>B-Type Nanocomposites\", Journal of Applied Physics, vol. 83 No. 11, Jun. 1998pp. 6271-6273. | W.C. Chang, et al., \"The effects of La-substitution on the microstructure and magnetic properties of nanocomposite NdFeB melt spun ribbons\", Journal of Magnetism and Magnetic Materials, Vo.167 Nos. 1-2, Mar. 1997, pp. 65-70. | W.C. Chang, et al., Magnetic and Microstructure Sudies of boron-enriched (Nd0.95La0.05))11Fe76.5&#x2014;xCoxTi2B10.5(x=0-15) Melt-Spun Ribbons, IEEE, Transactions on Magnetics, vol. 36, No. 5, Sep. 2000, pp. 312-3314. | W.C. Chang, et al., Magnetic and Microstructure Sudies of boron-enriched (Nd<SUB>0.95</SUB>La<SUB>0.05)</SUB>)<SUB>11</SUB>Fe<SUB>76.5-x</SUB>Co<SUB>x</SUB>Ti<SUB>2</SUB>B<SUB>10.5</SUB>(x=0-15) Melt-Spun Ribbons, IEEE, Transactions on Magnetics, vol. 36, No. 5, Sep. 2000, pp. 312-3314.', 1, '\\20220510\\9d13bdcce9d747eca2ebaa500ec63d9b.png', NULL, NULL, 1, NULL, NULL, 29, NULL, NULL, NULL, 38916, 38918, 38917, 47);
INSERT INTO `os_patent` VALUES (22776, 'アルカリ珪酸塩被膜の劣化防止方法', '防止碱金属硅酸盐涂膜降解的方法', 'JP4292766B2', '【課題】冷媒や潤滑油の存在下を使用環境とするアルカリ珪酸塩被膜を表面に有する希土類系永久磁石を当該環境で使用するに際し、当該被膜の劣化を防止して長期に渡って高い耐食性を発揮せしめる方法を提供すること。\n\n【解決手段】アルカリ珪酸塩被膜中に熱硬化性樹脂を均一分散させることを特徴とする。\n\n【選択図】 なし', '要解决的问题：提供一种方法，用于防止在稀土永磁体（其中存在冷却剂或润滑油的环境中）的表面上形成的碱金属硅酸盐薄膜的降解。磁铁，因此使薄膜长时间保持高耐腐蚀性。 ŽSOLUTION：通过在膜中均匀分散热固性树脂来防止碱金属硅酸盐膜的降解。该薄膜在稀土永磁体上形成，该永磁体在冷却剂（其可含有润滑油作为冷冻机油）的存在下在-30℃至200℃的绝对压力0.1-5MPa下使用。 Ž', 'JP2002253160', 1030636800, 'JP4292766B2', 1246982400, 1080144000, NULL, 1239897600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 9, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 2, 2, 2, 0, NULL, NULL, NULL, '山田 泰之', NULL, NULL, 'JP2013206956A | JP5642103B2', NULL, 1, '\\20220510\\6691e52afaf4409fb0ce20dd01d4c609.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 38919, 38921, 38920, 2);
INSERT INTO `os_patent` VALUES (22777, '希土類磁石の皮膜形成方法', '形成稀土磁体薄膜的方法', 'JP3927103B2', '【課題】簡単な工程により低コストで必要十分な密着性を有する、希土類磁石用の耐食性皮膜を形成する方法を提供することを目的とする。\n\n【解決手段】希土類磁石の皮膜形成方法であって、微小直径の粒子を高速で希土類磁石の表面に衝突させ、前記希土類磁石と粒子の衝突時のエネルギーにより粒子自身が融解して前記希土類磁石の表面に広がって皮膜を形成することを特徴とする希土類磁石の皮膜形成方法。前記粒子の直径は0.02mmから0.6mmまでの範囲であり、50~2000m/sの測度で粒子を空気または高圧不活性ガスまたは空気と高圧不活性ガスの混合物を用いて吹き付ける。', '要解决的问题：提供一种通过简单的工艺以低成本形成具有必要和足够粘合力的稀土磁体的耐腐蚀膜的方法。\n\n一种形成稀土磁体薄膜的方法，包括使微小直径的颗粒高速碰撞稀土磁体表面，由于稀土磁体和稀土磁体碰撞时的能量，颗粒本身熔化，并通过在稀土磁体表面上扩散形成薄膜。颗粒的直径为0.02mm至0.6mm，颗粒用空气或高压惰性气体或空气和高压惰性气体的混合物喷涂，测量值为50-2000m / s。', 'JP2002258148', 1030982400, 'JP3927103B2', 1181059200, 1080144000, NULL, 1173369600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 6, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '市枝 信之', NULL, 'JP1984138311A | JP1986166116A | JP1995252667A | JP1997205013A | JP1998280165A | JP2001158974A | JP2002237407A', NULL, NULL, 1, '\\20220510\\10797ad287d445039bafaa1f433bc94e.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 38922, 38924, 38923, 2);
INSERT INTO `os_patent` VALUES (22778, '希土類焼結磁石およびその製造方法', '稀土烧结磁体及其制造方法', 'JP4329318B2', '【課題】急冷合金を原料とする希土類磁石の保磁力を向上させる。\n\n【解決手段】本発明の希土類焼結磁石は、R2Fe14B型結晶構造を有する化合物(Rは希土類元素)からなる主相と、主相の粒界部分に位置する粒界相とを有する希土類焼結磁石である。粒界相は、主相の表面を薄く覆う非晶質層部分と、非晶質層部分によって挟まれた領域に存在する非磁性結晶層部分とを含む新規な構成を有し、逆磁区の発生を抑制する。\n\n【選択図】 図2', '要解决的问题：使用淬火合金作为原材料来提高稀土磁体的矫顽力。 ŽSOLUTION：稀土烧结磁体的主相由具有R SB2 B  Fe  14  B型晶体结构的化合物（R：稀土元素）和晶粒构成边界相位于主相的晶界部分。晶界相具有新的构造，包括覆盖主相表面的非晶层部分和存在于夹在非晶层部分之间的区域中的非磁性晶体层部分，并抑制反磁畴的形成。 Ž', 'JP2002269003', 1031846400, 'JP4329318B2', 1252425600, 1081353600, NULL, 1245945600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 20, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 11, 1, 0, 1, 0, NULL, NULL, NULL, '山田 正文', NULL, 'JP1985182107A | JP1985255941A | JP1986207546A | JP1986222102A | JP1993135931A | JP1994256913A | JP2000049005A | JP2001319806A | JP2002025810A | JP2002033206A | WO2000006792A1', 'WO2014010418A1', NULL, 1, '\\20220510\\e48efdc91e75401487a095f220fd0826.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 38925, 38927, 38926, 2);
INSERT INTO `os_patent` VALUES (22779, '磁石用粉末のプレス成形装置および磁石用粉末成形体の製造方法', '用于压制磁铁粉末的装置和制造用于磁铁的粉末压块的方法', 'JP4715077B2', '【課題】パルス磁界を用いて従来よりも効率良く磁石用粉末成形体を製造する方法に好適に用いられるプレス成形装置を提供する。\n\n【解決手段】キャビティを形成するための貫通孔を有するダイス20と、ダイス20の少なくとも上端部を内包する開口部30aを有し、ダイス20の上端面と実質的に同一面を形成するように配置されたダイプレート30と、キャビティ内に充填された磁石用粉末をプレスするための上パンチ10Aおよび下パンチ10Bと、キャビティ内の磁石用粉末に対してパルス磁界を印加するための磁界発生装置40と有する。ダイプレート30は、絶縁体で形成されており、上面が平滑面であるので、パルス磁界が印加されても渦電流が発生しない。\n\n【選択図】 図1', '本发明提供一种压制成形装置，其适用于比使用脉冲磁场之前更有效地制造磁体用粉末成形体的方法。\n\n解决方案：具有用于形成空腔的通孔的模具20，以及至少包含模具20的上端的开口30a，以便形成与模具20的上端面基本相同的表面用于向设置的模板30施加脉冲磁场的磁场发生器，上冲头10A和下冲头10B用于按压填充在腔体中的磁体粉末，并且磁体粉末在腔体中它有40。由于模板30由绝缘体形成并且上表面是光滑表面，所以即使施加脉冲磁场也不会产生涡电流。\n\n[选图]图1', 'JP2002267921', 1031846400, 'JP4715077B2', 1309881600, 1081353600, NULL, 1302192000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '内藤 真徳', NULL, NULL, NULL, NULL, 1, '\\20220510\\1273a7a0a6f14855a918e29b38df4ed5.png', NULL, NULL, 1, NULL, NULL, 11, NULL, NULL, NULL, 38928, 38930, 38929, 2);
INSERT INTO `os_patent` VALUES (22780, '磁界発生装置', '磁场发生器', 'JP4182712B2', '【課題】装置自体の重量化を抑制しつつ、漏洩磁界を抑制し中心磁界強度を向上できる、磁界発生装置を提供する。\n\n【解決手段】磁界発生装置10は、複数の永久磁石を用いて磁界発生空間32を有するように環状に構成される装置本体12を含む。装置本体12の外周に永久磁石表面から0mm以上35mm以下離して厚さ5mm以上35mm以下のシールド部材34a~40aが設けられる。シールド部材34a~40aは1.5T以上の飽和磁化を有する。永久磁石とシールド部材34a~40aとの間に飽和磁化が0.2T以下の介挿部材34b~40bが設けられる。\n\n【選択図】    図1', '要解决的问题：提供一种磁场产生装置，其能够通过抑制泄漏磁场来增强中心磁场的强度，同时抑制装置本身的重量增加。ŽSOLUTION：该磁场产生装置10包括使用多个永磁体形成为环形的装置主体12，以便具有磁场产生空间32.提供厚度为5-35mm的屏蔽构件34a-40a在装置主体12的外周边上，与永久磁铁的表面分开0-35mm。屏蔽构件34a-40a具有1.5T或更大的饱和放大率。在永磁体和屏蔽构件34a-40a之间设置具有0.2T或更小的饱和放大率的插入构件34b-40b。Ž', 'JP2002280808', 1032969600, 'JP4182712B2', 1227024000, 1081958400, NULL, 1221148800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '田中 洋介', NULL, NULL, NULL, NULL, 1, '\\20220510\\d9b92cff91264f1ca0a2f078a502506a.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 38931, 38933, 38932, 2);
INSERT INTO `os_patent` VALUES (22781, 'Pressvorrichtung und Verfahren zur Herstellung eines Magneten sowie Motor mit einem nach dem Verfahren hergestellten Magneten', '用于制造具有通过该方法生产的磁体的磁体和电动机的压制装置和方法', 'DE10297293B4', 'Pressvorrichtung (10), die umfasst: \n\neine Pressform (12) mit einer durchgehenden Öffnung (12a), die einen Hohlraum begrenzt; \n\neine erste Pressoberfläche (14a) und eine zweite Pressoberfläche (16a) zum Pressen eines in den Hohlraum eingefüllten magnetischen Pulvers (18); und \n\neine ein Magnetfeld erzeugende Einrichtung zum Anlegen eines ausrichtenden Magnetfeldes an das magnetische Pulver (18) in dem Hohlraum, \n\nwobei mindestens eine der ersten und zweiten Pressoberflächen (14a, 16a) eine erste Region aufweist, die aus einem ersten Material hergestellt ist, das eine Vickers-Härte von > 200, jedoch von ≤ 450 aufweist.', '压制装置(10),包括:\n\n 模具(12)具有限定腔的通孔(12a);\n\n 第一加压面(14a)和第二加压面(16a),用于加压填充在空腔中的磁粉(18)。 和\n\n 产生磁场的装置,用于将对准磁场施加到空腔中的磁性粉末(18),\n\n 其中第一和第二挤压表面(14a,16a)中的至少一个具有由第一材料制成的第一区域,该第一材料的维氏硬度大于200,但≤450。', 'DE10297293', 1033401600, 'DE10297293B4', 1404316800, 1093449600, NULL, 1404316800, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B4', NULL, NULL, 20, 3, 0, 0, 0, NULL, NULL, NULL, '2001306406 | 2002206487', 'JP | JP', 1001952000, 12, 12, NULL, NULL, 9, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, 'DE10019831A1 | JP1994006728A | JP1997306767A | JP1998270276A | JP2000248301A | US5383978A', NULL, NULL, 1, '\\20220510\\ce136ca282cf451aaa547aebb716f61d.png', NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 38899, 38901, 38900, 12);
INSERT INTO `os_patent` VALUES (22782, 'Press and magnet manufacturing method', '压制和制造磁铁的方法', 'US7314530B2', 'A press machine 10 includes a die 12 with a through hole 12a that defines a cavity, a first press surface 14a and a second press surface 16a for pressing a magnetic powder 18 loaded in the cavity, and magnetic field generating means for applying an aligning magnetic field to the magnetic powder 18 in the cavity. At least one of the first and second press surfaces 14a and 16a has a region made of a material having a Vickers hardness that is higher than 200 but equal to or lower than 450. In pressing the powder under the aligning magnetic field, the press machine 10 minimizes the disturbance in the orientation of the powder.', '压力机10包括具有通孔12a的模具12，通孔12a限定空腔，第一压制表面14a和第二压制表面16a，用于压制装载在空腔中的磁粉18，以及磁场产生装置，用于施加对准磁性磁场中的磁粉18在磁场中。第一和第二压制表面14a和16a中的至少一个具有由维氏硬度高于200但等于或低于450的材料制成的区域。在对准磁场下压制粉末时，压制机10最小化了粉末取向的干扰。', 'US10/490421', 1033401600, 'US7314530B2', 1199116800, 1102521600, NULL, 1199116800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 3, 0, 0, 0, NULL, NULL, NULL, '2001306406 | 2002206487', 'JP | JP', 1001952000, 12, 12, NULL, NULL, 29, 3, 0, 0, 0, NULL, '853', NULL, 'SHEEHAN, JOHN P.', NULL, 'EP0999039A2 | EP1020285A2 | JP1988033505A | JP1990155520A | JP1990240201A | JP1994218587A | JP1994330102A | JP1996309457A | JP1997003572A | JP1997035978A | JP1997150298A | JP1999314237A | JP2000254907A | JP2001058294A | US20040079190A1 | US20070098832A1 | US3560200A | US4211585A | US4578125A | US4601875A | US5250255A | US5383978A | US6299832B1 | US6332932B1 | US6371746B1 | US6413457B1 | US6599468B2 | US6656329B1 | US7094047B2', 'US20070196532A1 | US20100034688A1 | US8128757B2', NULL, 1, '\\20220510\\d63dd30ff42041938f2ce60267cea61e.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 38899, 38901, 38900, 12);
INSERT INTO `os_patent` VALUES (22783, '磁場解析方法および装置', '磁场分析方法和装置', 'JP4228649B2', '【課題】永久磁石について減磁が生じるか否かだけではなく、減磁後における磁束密度分布などの算出することができる磁場解析方法および装置を提供する。\n\n【解決手段】本発明の磁場解析方法は、第1の温度T1における永久磁石のB-Hカーブデータに基づいて、永久磁石内の複数の部位におけるパーミアンス係数および/またはパーミアンス係数に依存する数値を算出する。次に、第1の温度T1とは異なる第2の温度T2における前記永久磁石のB-Hカーブデータと前記パーミアンス係数または前記数値とに基づいて、第2の温度T2で使用した後の永久磁石における修正B-Hカーブデータを、複数の部位の各々について算出する。\n\n【選択図】 図5', '要解决的问题：提供磁场分析方法和装置，用于计算退磁后的磁通密度分布以及永磁体可能的退磁。解决方案：该磁场分析方法基于在第一温度T1下的永磁体的B-H曲线数据，计算永磁体中的多个部分中的磁导系数和/或取决于磁导系数的数值。对于每个部件，基于第二温度T2下的永磁体的BH曲线数据和磁导系数计算在使用之后在不同于第一温度T1的第二温度T2下的永磁体中的校正的BH曲线数据。数值。 Ž', 'JP2002291990', 1033660800, 'JP4228649B2', 1235491200, 1082563200, NULL, 1229011200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 8, 8, NULL, NULL, 0, 4, 4, 4, 1, NULL, NULL, NULL, '田中 幸雄', NULL, NULL, 'CN102763180A | CN102763180B | JP5626226B2 | WO2011099471A1', '友枝繁,薄型ダイナミックレシーバ,National Technical Report,日本,松下電器産業株式会社,1996年  8月,第42巻  第4号,431-439頁', 1, '\\20220510\\26fc7a43e0604134acf1c55fc919757a.png', NULL, NULL, 1, NULL, NULL, 11, NULL, NULL, NULL, 38934, 38936, 38935, 8);
INSERT INTO `os_patent` VALUES (22784, 'ワイヤソーを用いる切断方法および希土類磁石の製造方法', '使用线锯的切割方法和稀土磁体的制造方法', 'JP4656804B2', '【課題】ワイヤソー装置で水を主成分とする冷却液を用いて切断する際のワイヤの寿命を長くする。\n\n【解決手段】芯線の外周面に形成された樹脂層によって砥粒が固着されたワイヤ20を用いる切断方法であって、表面がグリコールを含む潤滑液によって被覆されたワイヤを一対のリールボビン40a、40bに巻く準備工程と、一対のリールボビンに巻かれたワイヤを複数のローラ10a~10cの間を走行させる工程と、希土類合金がワイヤによって切削される部分に水を主成分とする第1冷却液を供給しながら、走行しているワイヤで希土類合金を切削する工程とを包含する。\n\n【選択図】 図1', '本发明的一个目的是在使用主要由电线锯装置中的水组成的冷却剂切割时增加导线的寿命。\n\n溶液:使用磨料颗粒通过形成在芯线的外周表面上的树脂层固定的导线20的切割方法,涂有含有含有乙二醇的润滑液,一对卷轴Bobbobin 40a,首先冷却缠绕在40b周围的制备步骤和在多个辊10a至10c之间行进的步骤,以及通过电线切割稀土合金的部分的第一冷却。在供应液体时,它包括稀土合金与旅行电线。\n\n图1', 'JP2002297690', 1034179200, 'JP4656804B2', 1300809600, 1076515200, NULL, 1294329600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 20, 3, 0, 0, 0, NULL, NULL, NULL, '2001318867 | 2002149678', 'JP | JP', 1003248000, 2, 19, NULL, NULL, 0, 2, 0, 0, 0, NULL, NULL, NULL, '野村 亨', '所村 美和 | 刈間 宏信', NULL, 'CN110370442A | CN110370442B', NULL, 1, '\\20220510\\7ec1c1d2864e4fdd88104d2d077c9367.png', NULL, NULL, 1, NULL, NULL, 15, NULL, NULL, NULL, 38937, 38861, 38860, 21);
INSERT INTO `os_patent` VALUES (22785, '希土類合金の造粒粉の製造方法、希土類合金の造粒粉の製造装置および希土類合金焼結体の製造方法', '稀土合金造粒粉的制造方法，稀土合金造粒粉的制造装置及稀土合金烧结体的制造方法', 'JP4240988B2', '【課題】流動性やプレス成形性に優れ、且つ、優れた磁気特性を有する磁石を製造することが可能な希土類合金の造粒粉の製造方法を提供する。\n\n【解決手段】残留磁化を有する希土類合金の粉末を通気性を有する台板42b上に載置された状態で槽10内に用意する工程と、台板42bの下から上に流れる第1ガス流aを槽内に生成する工程と、第1ガス流によって粉末の粒子に運動エネルギーを与え、粉末の残留磁化による凝集力と運動エネルギーによる転動作用とを利用して実質的にゼロ磁界下で造粒する工程と、台板42bに対して上から下に向けた第2ガス流bを槽内に生成する工程と、粉末からなる粉末層を台板上に形成し第2流気によって粉末層を圧縮する工程とを包含する。さらに、第1流気を生成する工程および第2流気を生成する工程の少なくとも一部は同時に実行される。\n\n【選択図】 図2', '要解决的问题：提供一种制造稀土合金造粒粉末的方法，用于制造具有优异流动性，压制成形性和优异磁特性的磁体。 ŽSOLUTION：这种制造稀土合金粒状粉末的方法包括：制备具有剩磁的稀土合金粉末放置在罐10中的透气底板42b上的步骤;产生从下侧相对于基板42b向上流动的第一气流（a）的步骤;通过利用粉末的剩余磁化的矫顽力和通过第一气流向粉末颗粒提供动能的动能的滚动效应，在基本为零的磁场下进行造粒的步骤;从相对于基板42b的上侧向下产生第二气流（b）的步骤;以及在基板上形成由粉末形成的粉末层并通过第二气流压缩粉末层的步骤。另外，同时执行产生第一气流的步骤和产生第二气流的步骤的至少一部分。 Ž', 'JP2002298621', 1034265600, 'JP4240988B2', 1237305600, 1083254400, NULL, 1231430400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 19, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 16, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '鈴木 毅', NULL, 'JP1974119193A | JP1976020593A | JP1992100532A | JP1994028213A | JP1998140202A | JP1999131101A', NULL, NULL, 1, '\\20220510\\b3ce40478dd948988fe3ef03f3c18a18.png', NULL, NULL, 1, NULL, NULL, 16, NULL, NULL, NULL, 38938, 38940, 38939, 16);
INSERT INTO `os_patent` VALUES (22786, 'Cutting method using wire saw, wire saw device, and method of manufacturing rare-earth magnet', '使用线锯的切割方法，线锯装置和制造稀土磁体的方法', 'US6945242B2', 'A method of cutting a rare-earth alloy with a wire 20, on which abrasive grains are fixed with a resin layer provided on the outer surface of a core wire, includes the steps of: providing a wire, of which the surface is coated with a lubricant including a glycol, by reeling the wire up in a pair of reel bobbins 40a and 40b; reeling the wire off one of the reel bobbins and letting the wire travel on a plurality of rollers 10a, 10b and 10c; and cutting the rare-earth alloy with the traveling wire while a portion of the rare-earth alloy being cut with the wire is supplied with a first coolant which is mainly composed of water. As a result, the life of a wire can be extended when a rare-earth alloy is cut with a wire saw machine using a coolant which is mainly composed of water.', '一种用金属丝20切割稀土合金的方法，其上用设置在芯线外表面上的树脂层固定磨粒，包括以下步骤：提供金属丝，其表面涂有金属丝。通过将线卷绕在一对卷轴筒40a和40b中，包括乙二醇的润滑剂;将电线从一个卷轴筒管上卷下并让电线在多个辊子10a，10b和10c上行进;用导线切割稀土合金，同时用导线切割的稀土合金的一部分供给主要由水组成的第一冷却剂。结果，当使用主要由水组成的冷却剂用线锯机切割稀土合金时，可以延长线的寿命。', 'US10/492681', 1034611200, 'US6945242B2', 1127145600, 1103731200, NULL, 1127145600, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 19, 3, 0, 0, 0, NULL, NULL, NULL, '2002149678', 'JP', 1022083200, 6, 19, NULL, NULL, 28, 20, 4, 7, 1, NULL, '850', NULL, 'HAIL, III, JOSEPH J.', 'MULLER, BRYAN', 'JP1992218594A | JP1996057847A | JP1997029607A | JP1997314548A | JP1998166353A | JP1998277914A | JP1999198018A | JP1999198020A | JP1999309661A | JP2000296455A | JP2001047363A | JP2001138205A | JP2001164240A | JP2002036113A | JP2002096251A | US4005044A | US4770723A | US4792368A | US5013482A | US5176850A | US5201305A | US5827113A | US5896851A | US6006737A | US6381830B1 | US6390896B1 | US6443143B1 | US6471583B1', 'KR100898151B1 | US10245661B2 | US10252357B2 | US10391673B2 | US20070023027A1 | US20080264228A1 | US20100170495A1 | US20120266815A1 | US20120298091A1 | US20130175242A1 | US20150298228A1 | US20150375317A1 | US20160035443A1 | US7926478B2 | US8056551B2 | US8357217B2 | US8568124B2 | US8881716B2 | US9312066B2 | US9616511B2', 'U.S. Appl. No. 09/996,318, filed on Nov. 23, 2001, currently pending; for: \"Method for Cutting Rare Earth Alloy, Method for Manufacturing Rare Earth Magnet, and Wire-Saw Machine\"; Applicants: Sadahiko Kondo et al.', 1, '\\20220510\\949a124abb7e4fa48824d772265040ff.png', NULL, NULL, 1, NULL, NULL, 16, NULL, NULL, NULL, 38941, 38861, 38860, 21);
INSERT INTO `os_patent` VALUES (22787, '銅めっき被膜を表面に有する希土類系永久磁石の製造方法', '制造在其表面上具有镀铜膜的稀土基永磁体的方法', 'JP3994847B2', '【課題】新規な電気銅めっき処理用めっき液を使用した、密着性に優れた銅めっき被膜を表面に有する希土類系永久磁石の製造方法を提供すること。\n\n【解決手段】硫酸銅を0.03mol/L〜0.5mol/L、エチレンジアミン四酢酸を0.05mol/L〜0.7mol/L、硫酸ナトリウムを0.02mol/L〜1.0mol/L、酒石酸塩およびクエン酸塩から選ばれる少なくとも1種を0.1mol/L〜1.0mol/L含有し、pHが11.0〜13.0に調整されためっき液を使用して電気銅めっき処理により、希土類系永久磁石の表面に直接にまたは他の金属めっき被膜を介して銅めっき被膜を形成することを特徴とする。\n\n【選択図】 なし', '要解决的问题：提供一种制造稀土系统永磁体的方法，该永磁体具有通过使用新的电镀铜溶液在表面上具有优异粘附性的铜镀膜。ŽSOLUTION：使用含有0.03至0.5 mol / L硫酸铜，0.05至0.7 mol /的镀液，通过电镀铜处理直接或通过稀土系统永磁体表面上的另一金属镀膜形成铜镀膜L乙二胺四乙酸，0.02至1.0mol / L硫酸钠，和0.1至1.0mol / L，选自酒石酸盐和柠檬酸盐中的至少一种，并将pH调节至11.0至13.0。Ž', 'JP2002302088', 1034697600, 'JP3994847B2', 1193155200, 1084377600, NULL, 1186675200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 9, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 10, 0, 0, 0, 0, NULL, NULL, NULL, '瀧口 博史', NULL, 'JP1984197587A | JP1992072086A | JP1993230687A | JP1993239688A | JP1994013218A | JP2000309896A | JP2001295091A | JP2002285377A | JP2002506927A | WO2002004714A1', NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 38942, 38944, 38943, 2);
INSERT INTO `os_patent` VALUES (22788, '物品表面への電気めっき被膜の形成方法', '在制品表面上形成电镀膜的方法', 'JP4131386B2', '【課題】 物品の表面材質や表面性状に依存することなくその表面に均一で緻密な電気めっき被膜を優れた密着性でもって形成する方法を提供すること。\n\n【解決手段】 物品表面に第1金属の粉末を分散させた樹脂からなる樹脂被膜を形成した後、この樹脂被膜形成物品を第1金属より貴な電位を有する第2金属のイオンを含む溶液に浸漬することで樹脂被膜表面に第2金属の置換めっき被膜を形成し、さらに置換めっき被膜表面に第3金属の電気めっき被膜を形成することを特徴とする。', '要解决的问题：提供一种形成精细，均匀的电沉积薄膜的方法，该薄膜在制品表面上显示出优异的粘合性能，而不管表面的材料或性质如何。 ŽSOLUTION：在制品表面上形成由树脂制成的树脂涂膜，其中分散有第一金属粉末。将涂有树脂涂膜的制品浸泡到含有第二金属离子的溶液中，该第二金属的电位比第一金属的电位更高，以通过浸渍电镀在树脂涂层的表面上形成第二金属的电镀膜电影。在通过浸镀形成的镀膜表面上，形成第三金属的电沉积膜。 Ž', 'JP2002308336', 1035302400, 'JP4131386B2', 1218556800, 1065715200, NULL, 1212681600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 9, 2, 0, 0, 0, NULL, NULL, NULL, '2002017686', 'JP', 1011888000, 2, 16, NULL, NULL, 10, 0, 0, 0, 0, NULL, NULL, NULL, '日比野 隆治', NULL, 'JP1969027478Y1 | JP1992276095A | JP1994017259A | JP1995161516A | JP1999003811A | JP1999233325A | JP1999260614A | JP1999269693A | JP2003321783A | WO2003038157A1', NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 11, NULL, NULL, NULL, 38945, 38947, 38946, 17);
INSERT INTO `os_patent` VALUES (22789, '希土類系永久磁石の製造方法', '稀土类永久磁铁的制造方法', 'JP4131385B2', '【課題】 表面に均一で緻密な電気めっき被膜を優れた密着性でもって有することで高い耐食性を示す希土類系永久磁石の製造方法を提供すること。\n\n【解決手段】 希土類系永久磁石表面に第1金属の粉末を分散させた樹脂からなる非導電性被膜を形成した後、非導電性被膜形成磁石を第1金属より貴な電位を有する第2金属のイオンを含む溶液に浸漬することで非導電性被膜表面に第2金属の置換めっき被膜を形成し、さらに置換めっき被膜表面に第3金属の電気めっき被膜を形成することを特徴とする。', '要解决的问题：通过提供具有优异粘合性的均匀致密的电镀涂膜，提供一种制造具有高耐腐蚀性的稀土基永磁体的方法。 ŽSOLUTION：在稀土类永久磁铁的表面上形成由分散有第一金属粉末的树脂构成的非导电性涂膜后，在第二金属的表面形成被第二金属置换的置换镀膜。通过将非导电涂膜形成的永磁体浸入含有比第一金属更高贵的电位的第二金属离子的溶液中，并且在取代时形成第三金属的电镀涂膜，从而形成非导电涂膜镀膜。 Ž', 'JP2002308335', 1035302400, 'JP4131385B2', 1218556800, 1068739200, NULL, 1212681600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 2, 0, 0, 0, NULL, NULL, NULL, '2001330806 | 2002052834', 'JP | JP', 1004284800, 2, 16, NULL, NULL, 10, 0, 0, 0, 0, NULL, NULL, NULL, '日比野 隆治', NULL, 'JP1969027478Y1 | JP1992276095A | JP1994017259A | JP1995161516A | JP1999003811A | JP1999233325A | JP1999260614A | JP1999269693A | JP2003286586A | WO2003038157A1', NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 13, NULL, NULL, NULL, 38948, 38947, 38946, 17);
INSERT INTO `os_patent` VALUES (22790, 'Method for forming electroplated coating on surface of article', '在制品表面形成电镀涂层的方法', 'EP1441047B1', 'An object of the present invention is to provide a method for forming a uniform and dense electroplating film with high adhesion strength on the surface of an article, yet irrespective of the surface material and the surface properties of the article. A means for a solution of the problem comprises: forming on the surface of the article, a resin coating made of a resin containing dispersed therein a powder of a first metal; then forming a second-metal substituted plating film on the surface of the resin coating by immersing the resin-coated article in a solution containing ions of a second metal having an ionization potential nobler than that of the first metal; and further forming an electroplating film of a third metal on the surface of the metal-substituted plating film.', '本发明的一个目的是提供一种在制品表面上形成具有高粘合强度的均匀致密电镀膜的方法，但不论该制品的表面材料和表面性质如何。解决该问题的方法包括：在制品表面上形成树脂涂层，该树脂涂层由树脂制成，其中分散有第一金属粉末;然后，通过将树脂涂覆的制品浸入含有电离电位高于第一金属的第二金属离子的溶液中，在树脂涂层的表面上形成第二金属取代的镀膜;并且在金属取代镀膜的表面上进一步形成第三金属的电镀膜。', 'EP2002777953', 1035475200, 'EP1441047B1', 1453219200, 1090944000, NULL, 1453219200, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 17, 2, 0, 0, 0, NULL, NULL, NULL, '2001330806 | 2002017686 | 2002052834 | 2002220425', 'JP | JP | JP | JP', 1004284800, 11, 16, NULL, NULL, 26, 0, 0, 0, 0, NULL, '854', NULL, NULL, NULL, 'DE3040784A1 | EP0502475A2 | EP1024506A1 | EP1028437A1 | GB1149033A | GB2169925A | JP1975082041A | JP1975082320A | JP1986130453A | JP1986210183A | JP2000091112A | JP2000133541A | JP2001006909A | JP2001189205A | JP2001295091A | US3775176A | US4470883A | US6819211B2 | WO1983002538A1 | WO1987004190A1 | WO1999023675A1', NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 11, NULL, NULL, '有效:DE | 失效:FI,GB,FR,NL', 38949, 38947, 38946, 17);
INSERT INTO `os_patent` VALUES (22791, '물품표면에의 전기도금 피막의 형성방법', '在制品表面上形成电镀膜的方法', 'KR100921874B1', 'A method for forming a uniform, dense electroplated coating on the surface of an article with good adhesion irrespective of the surface material and surface properties. The method is characterized in that a resin coating containing resin in which powder of a first metal is dispersed is formed on the surface of an article, a displacement plated coating of a second metal having a potential nobler than that of the first metal is formed on the resin coating surface by dipping the resin coated article in a solution containing ions of the second metal, and an electroplated coating of a third metal is formed on the displacement plated coating.© KIPO & WIPO 2007', '无论表面材料和表面性质如何，在制品表面上形成均匀，致密的电镀涂层的方法具有良好的粘附性。该方法的特征在于，在制品的表面上形成含有分散有第一金属粉末的树脂的树脂涂层，形成具有比第一金属更高的电位的第二金属的置换镀覆涂层。树脂涂层表面通过将树脂涂层制品浸入含有第二金属离子的溶液中，并在位移镀层上形成第三金属的电镀涂层。©KIPO＆WIPO 2007', 'KR1020037012195', 1035475200, 'KR100921874B1', 1255363200, 1087488000, NULL, 1254844800, '韩国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 16, 2, 0, 0, 0, NULL, NULL, NULL, '2001330806 | 2002017686 | 2002052834 | 2002220425', 'JP | JP | JP | JP', 1004284800, 11, 16, NULL, NULL, 3, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP1999233324A | JP1999260614A', NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 20, NULL, NULL, NULL, 38949, 38947, 38946, 17);
INSERT INTO `os_patent` VALUES (22792, 'Method for forming electroplating film on surfaces of articles', '在制品表面上形成电镀膜的方法', 'US7449100B2', 'An object of the present invention is to provide a method for forming a uniform and dense electroplating film with high adhesion strength on the surface of an article, yet irrespective of the surface material and the surface properties of the article. A means for a solution of the problem comprises: forming on the surface of the article, a resin coating made of a resin containing dispersed therein a powder of a first metal; then forming a second-metal substituted plating film on the surface of the resin coating by immersing the resin-coated article in a solution containing ions of a second metal having an ionization potential nobler than that of the first metal; and further forming an electroplating film of a third metal on the surface of the metal-substituted plating film.', '本发明的一个目的是提供一种在制品表面上形成具有高粘合强度的均匀致密电镀膜的方法，但不论该制品的表面材料和表面性质如何。解决该问题的方法包括：在制品表面上形成树脂涂层，该树脂涂层由树脂制成，其中分散有第一金属粉末;然后，通过将树脂涂覆的制品浸入含有电离电位高于第一金属的第二金属离子的溶液中，在树脂涂层的表面上形成第二金属取代的镀膜;并且在金属取代镀膜的表面上进一步形成第三金属的电镀膜。', 'US10/467349', 1035475200, 'US7449100B2', 1226332800, 1081958400, NULL, 1226332800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 2, 0, 0, 0, NULL, NULL, NULL, '2001330806 | 2002017686 | 2002052834 | 2002220425', 'JP | JP | JP | JP', 1004284800, 11, 16, NULL, NULL, 28, 3, 0, 0, 4, NULL, '851', NULL, 'WONG, EDNA', NULL, 'DE3040784A1 | EP0502475A2 | EP1024506A1 | EP1028437A1 | GB1149033A | GB2169925A | JP1969027478Y1 | JP1986130453A | JP1992276095A | JP1993082320A | JP1995161516A | JP1995176443A | JP1996186016A | JP1997205013A | JP1999260614A | JP2000091112A | JP2000133541A | JP2001006909A | JP2001189205A | JP2001295091A | US3522094A | US3775176A | US4470883A | US5302464A | US6819211B2 | WO1983002538A1 | WO1987004190A1 | WO1999023675A1', 'US10327348B2 | US10447834B2 | US10524372B2', 'Chinese Office Action w/English translation dated Mar. 11, 2005. cited by other . | Japanese Office Action mailed on Jan. 29, 2008. | Japanese Office Action mailed on Jan. 29, 2008. cited by other. | Supplementary European Search Report issued on Apr. 3, 2007 for European patent application No. 02 77 7953. cited by other .', 1, NULL, NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 38949, 38947, 38946, 17);
INSERT INTO `os_patent` VALUES (22793, 'VERFAHREN ZUR HERSTELLUNG EINES GALVANISCHEN ÜBERZUGS AUF DER OBERFLÄCHE EINES GEGENSTANDS', '在物体表面上产生电流涂层的方法', 'DE60247757T2', 'A method for forming a uniform, dense electroplated coating on the surface of an article with good adhesion irrespective of the surface material and surface properties. The method is characterized in that a resin coating containing resin in which powder of a first metal is dispersed is formed on the surface of an article, a displacement plated coating of a second metal having a potential nobler than that of the first metal is formed on the resin coating surface by dipping the resin coated article in a solution containing ions of the second metal, and an electroplated coating of a third metal is formed on the displacement plated coating.', '无论表面材料和表面性质如何，在制品表面上形成均匀，致密的电镀涂层的方法具有良好的粘附性。该方法的特征在于，在制品的表面上形成含有分散有第一金属粉末的树脂的树脂涂层，形成具有比第一金属更高的电位的第二金属的置换镀覆涂层。通过将树脂涂覆的制品浸入含有第二金属离子的溶液中，在树脂涂覆表面上，在置换镀覆涂层上形成第三金属的电镀涂层。', 'DE60247757', 1035475200, 'DE60247757T2', 1453219200, 1453219200, NULL, 1453219200, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 34, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '855', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 20, NULL, NULL, NULL, 38950, 38947, 38951, 17);
INSERT INTO `os_patent` VALUES (22794, '내식성 피막을 갖는 희토류계 영구자석, 그 제조방법 및 내식성 피막형성용 처리액', '具有耐腐蚀膜的稀土基永磁体，其制造方法以及用于形成腐蚀的处理液 -', 'KR100959737B1', '본 발명의 과제는, 뛰어난 내열성과 접착성을 겸비한 염가인 내식성 피막을 표면에 갖는 희토류계 영구자석, 그제조방법 및 내식성 피막형성 처리액을 제공하는 것이다. 그리고 본 발명에 의하면, 규산리튬과 열가소성수지를구성성분으로 하는 내식성 피막으로서, 해당 피막중에 열가소성수지가 0.1중량%∼50중량%의 함량으로 균일분산한피막을 표면에 갖는 것을 특징으로 하는 희토류계 영구자석이 제공된다. 또한, 열가소성수지의 소프프리(soapfree) 수용성 에멀전수지를 사용하고, 소정량의 열가소성수지와 규산리튬을 포함하는 것을 특징으로 하는 뛰어난내식성 피막형성 처리액이 제공되고, 이 처리액으로부터 내식성 피막을 형성하는 것을 특징으로 하는 희토류계영구자석의 제조방법이 제공된다.', '本发明的挑战是提供一种具有耐盐涂层的稀土基永磁体,其结合了优异的耐热性和粘合性,稀土基永磁体,以及反应方法和耐腐蚀性膜形成处理液体。根据本发明,作为具有疏水酸的耐腐蚀涂层,疏水树脂,具有组成组分的组成涂膜是稀土水平,其在0.1%至50重量%的表面下具有均匀的分散膜提供永磁体。此外,提供了优异的耐腐蚀涂层处理液,包括肥皂暴水可溶性乳化剂(SOAPFREEE)水溶性乳化剂和预定量的热塑性树脂和硅酸盐锂,并从加工液中形成耐腐蚀涂层制造提供了通过提供的稀土基磁化的方法。', 'KR1020047006956', 1036944000, 'KR100959737B1', 1274716800, 1115827200, NULL, 1274025600, '韩国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 9, 3, 0, 0, 0, NULL, NULL, NULL, '2001344527', 'JP', 1005235200, 12, 12, NULL, NULL, 3, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP1999251121A | JP2953654B2', NULL, NULL, 1, '\\20220510\\8599bb95ecd6489dbee2ee72787209cd.png', NULL, NULL, 1, NULL, NULL, 14, NULL, NULL, NULL, 38952, 38954, 38953, 15);
INSERT INTO `os_patent` VALUES (22795, 'Rare-earth permanent magnet having corrosion-resistant coating and process for producing the same', '具有耐腐蚀涂层的稀土永磁体及其制造方法', 'EP1453069B1', 'The invention aims to provide a rare earth metal-based permanent magnet which has on the surface an inexpensive corrosion-resistant film combining excellent heat-resistance with excellent adhesiveness; a process for producing the permanent magnet; and a treating liquid for forming the corrosion-resistant film. The invention provides a rare earth metal-based permanent magnet characterized by it has on the surface a corrosion-resistant film containing lithium silicate and a thermoplastic resin as the constituting components, the film containing uniformly dispersed therein the thermoplastic resin at a content of 0.1 wt% to 50 wt%. The treating liquid, which is an excellent liquid for forming the corrosion-resistant film, is characterized by that a soap-free aqueous emulsion of a thermoplastic resin was used and that it contains the thermoplastic resin and lithium silicate in given amounts. The process, which is for producing the rare earth metal-based permanent magnet, is characterized by forming a corrosion-resistant film by using the treating liquid.', '本发明的目的在于提供一种稀土金属基永磁体，其表面具有廉价的耐腐蚀膜，其结合了优异的耐热性和优异的粘合性。生产永磁体的方法;和用于形成耐腐蚀膜的处理液。本发明提供一种稀土金属基永磁体，其特征在于，在表面上具有含有硅酸锂和热塑性树脂作为构成组分的耐腐蚀膜，该膜含有均匀分散在0.1wt％的热塑性树脂中的热塑性树脂。 ％至50％重量。处理液是用于形成耐腐蚀膜的优异液体，其特征在于使用热塑性树脂的无皂水乳液，并且其含有给定量的热塑性树脂和硅酸锂。用于制造稀土金属基永磁体的方法的特征在于通过使用处理液形成耐腐蚀膜。', 'EP2002802737', 1036944000, 'EP1453069B1', 1398182400, 1093968000, NULL, 1398182400, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 11, 3, 0, 0, 0, NULL, NULL, NULL, '2001344527', 'JP', 1005235200, 12, 12, NULL, NULL, 9, 0, 0, 0, 0, NULL, '854', NULL, NULL, NULL, 'EP0924715A2 | JP1982147525A | JP1986231186A | JP1998007987A | JP1999251121A | US4770723A | US4792368A | US5840375A | US6174609B1', NULL, NULL, 1, '\\20220510\\4789dfb56f9040cbab6fc9f4b38ab318.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, '有效:DE | 失效:FI,GB,FR,NL', 38952, 38954, 38953, 15);
INSERT INTO `os_patent` VALUES (22796, 'Rare earth permanent magnet having corrosion-resistant coating and process for producing the same', '具有耐腐蚀涂层的稀土永磁体及其制造方法', 'PH12004500653B1', 'A rare-earth permanent magnet which has on the surface an inexpensive corrosion-resistant coating film combining excellent heat resistance with excellent adhesion; a process for producing the permanent magnet; and a treating liquid for forming the corrosion-resistant coating film. The rare-earth permanent magnet is characterized by having on the surface thereof a corrosion-resistant coating film which comprises lithium silicate and a thermoplastic resin as components and in which the thermoplastic resin is contained in an amount of 0.1 to 50 wt.% and has been evenly dispersed. The treating liquid, which is an excellent liquid for forming the corrosion-resistant coating film, is characterized in that a soap-free aqueous emulsion of a thermoplastic resin was used and that the treating liquid contains the thermoplastic resin and lithium silicate in given amounts. The process, which is for producing a rare-earth permanent magnet, is characterized by forming a corrosion-resistant coating film from the treating liquid.', '一种稀土永磁体,在表面上具有廉价的耐腐蚀涂膜,与优异的粘合性相结合出优异的耐热性;制造永磁体的方法;和用于形成耐腐蚀涂膜的处理液体。稀土永磁体的特征在于,其表面具有耐腐蚀涂膜,其包括硅酸锂和热塑性树脂作为组分,其中热塑性树脂的含量为0.1至50重量%。%并具有均匀分散。作为形成耐腐蚀涂膜的优异液体的处理液的特征在于使用热塑性树脂的无皂水乳液,并且处理液含有给定量的热塑性树脂和硅酸锂。用于制造稀土永磁体的方法,其特征在于通过从处理液体中形成耐腐蚀涂膜。', 'PH12004500653', 1036944000, 'PH12004500653B1', 1432051200, 1036944000, NULL, 1432051200, '菲律宾', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 75, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, '856', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\273d40edc51443de8eb6ed4cb09858ba.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 38955, 38954, 38956, 15);
INSERT INTO `os_patent` VALUES (22797, 'SELTENERD-PERMANENTMAGNET MIT KORROSIONSBESTÄNDIGER BESCHICHTUNG UND PROZESS ZU SEINER HERSTELLUNG', '稀土永磁磁铁,耐腐蚀涂层和工艺生产', 'DE60246221T2', 'A rare−earth permanent magnet which has on the surface an inexpensive corrosion−resistant coating film combining excellent heat resistance with excellent adhesion; a process for producing the permanent magnet; and a treating liquid for forming the corrosion−resistant coating film. The rare−earth permanent magnet is characterized by having on the surface thereof a corrosion−resistant coating film which comprises lithium silicate and a thermoplastic resin as components and in which the thermoplastic resin is contained in an amount of 0.1 to 50 wt.% and has been evenly dispersed. The treating liquid, which is an excellent liquid for forming the corrosion−resistant coating film, is characterized in that a soap−free aqueous emulsion of a thermoplastic resin was used and that the treating liquid contains the thermoplastic resin and lithium silicate in given amounts. The process, which is for producing a rare−earth permanent magnet, is characterized by forming a corrosion−resistant coating film from the treating liquid.', '一种稀土永磁体，其表面具有廉价的耐腐蚀涂膜，具有优异的耐热性和优异的粘附性;生产永磁体的方法;和用于形成耐腐蚀涂膜的处理液。该稀土永磁体的特征在于，在其表面上具有耐腐蚀涂膜，该涂膜包含硅酸锂和热塑性树脂作为组分，并且其中热塑性树脂的含量为0.1-50重量％并且具有均匀分散。处理液是用于形成耐腐蚀涂膜的优良液体，其特征在于使用热塑性树脂的无皂水乳液，并且处理液含有给定量的热塑性树脂和硅酸锂。该制备稀土永磁体的方法的特征在于由处理液形成耐腐蚀涂层膜。', 'DE60246221', 1036944000, 'DE60246221T2', 1398182400, 1398182400, NULL, 1398182400, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 19, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '855', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 14, NULL, NULL, NULL, 38957, 38954, 38958, 15);
INSERT INTO `os_patent` VALUES (22798, '希土類磁石の製造方法', '稀土磁铁的制造方法', 'JP4155007B2', '(修正有)\n\n【課題】硬磁性相の組成を実質的に変更することなく、高温における磁気特性が優れた希土類磁石を製造する方法を提供する。\n\n【解決手段】硬磁性相および軟磁性相のそれぞれの組成および硬磁性相と軟磁性相との体積比を設定する工程と、組成および体積比の条件下で、粒子間交換結合定数Je、粒子1個当たりの接触面積S、単位体積当たりの異方性定数Ku、粒子1個当たりの体積Vの値をそれぞれ設定し、η=(Je×S)/(Ku×V)で表される粒子間交換結合エネルギーと結晶異方性エネルギーとの比ηを求める工程と、ηの関数として磁気特性MP(η)を第1の温度T1および第2の温度T2(>T1)について求める工程と、工程(c)で得られた磁気特性MP(η、T1)とMP(η、T2)とに基づいて、磁気特性MPの温度係数α(MP)を複数のηの値について求める工程等により希土類磁石を製造する。\n\n【選択図】  図1', '（经修改）\n\n要解决的问题：提供一种生产在高温下具有优异磁性的稀土磁体的方法，而基本上不改变硬磁相的组成。\n\n硬磁性相和软磁性相的各组合物和硬磁相和设置软磁相的体积比，该组合物和体积，颗粒间交换的条件下，偶合常数济的步骤，颗粒每各向异性接触面积S常数Ku的每单位体积，分别设定每个粒子的体积V的值，η=（JE×S）/由下式表示的粒子（喾×V）和交换耦合能量，并获得该结晶各向异性能量的比例之间的ETA，确定所述第一温度T1和第二温度T2（> T1）的磁特性MP（ETA）作为ETA的函数的步骤，在得到的步骤（c）的磁特性MP（η，T1）的基础上和MP（η，T2），稀土类由例如获得磁特性MP阿尔法一个（MP）的温度系数的多个的η的值的过程磁铁是制造的。\n\n点域1', 'JP2002337716', 1037808000, 'JP4155007B2', 1222185600, 1087401600, NULL, 1216310400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '山田 正文', NULL, NULL, NULL, NULL, 1, '\\20220510\\63c16d04ecc849c5b6643df401efd85c.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 38959, 38961, 38960, 2);
INSERT INTO `os_patent` VALUES (22799, 'Verfahren und Vorrichtung zur Herstellung eines granulierten Seltenerdmetall-Legierungspulvers und Verfahren zur Herstellung eines Seltenerdmetall-Legierungssinterkörpers', '一种制造粒状稀土金属合金粉末的方法和设备以及一种制备稀土合金烧结体的方法', 'DE10297484B4', 'A method for producing a granulated powder of a rare earth alloy which comprises a step of providing a rare earth alloy powder, a step of imparting remanent magnetization to the powder, and a step of granulating the powder by the utilization of the cohesion due to the remanent magnetization of the powder. In the method, the addition of a granulating agent can be frequently omitted, since the cohesion due to the remanent magnetization of the powder is utilized.', '一种稀土合金造粒粉末的制造方法，包括提供稀土合金粉末的步骤，赋予粉末剩余磁化强度的步骤，以及利用由此产生的内聚力使粉末成粒的步骤。剩余磁化的粉末。在该方法中，可以经常省略添加造粒剂，因为利用了由于粉末的剩余磁化引起的内聚力。', 'DE10297484', 1038326400, 'DE10297484B4', 1161187200, 1101312000, NULL, 1161187200, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B4', NULL, NULL, 27, 2, 0, 0, 0, NULL, NULL, NULL, '2001362436 | 2002298621', 'JP | JP', 1006876800, 10, 16, NULL, NULL, 8, 0, 0, 0, 1, NULL, '852', NULL, NULL, NULL, 'DE3780588D1 | DE3780588T2 | JP1988237402A | JP1989127643A | US4770723A | US4792368A | US5666635A', NULL, 'Patent Abstracts of Japan [CD-ROM]: JP 10-140 202 A', 1, '\\20220510\\51b10ff98d804bb4bad061d43b6550f4.png', NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 38962, 38940, 38939, 16);
INSERT INTO `os_patent` VALUES (22800, 'Method and apparatus for producing granulated powder of rare earth alloy and method for producing rare earth alloy sintered compact', '生产稀土合金粒状粉末的方法和设备以及稀土合金烧结体的生产方法', 'US7622010B2', 'A method of making a rare-earth alloy granulated powder according to the present invention includes the steps of: preparing a rare-earth alloy powder; generating remanent magnetization in the powder; and granulating the powder by utilizing agglomeration force produced by the remanent magnetization of the powder. Since the agglomeration force produced by the remanent magnetization is utilized, the addition of a granulating agent may be omitted.', '根据本发明的制造稀土合金造粒粉末的方法包括以下步骤：制备稀土合金粉末;在粉末中产生剩余磁化;通过利用粉末的剩余磁化产生的凝聚力使粉末粒化。由于利用了剩余磁化产生的凝聚力，因此可以省略添加造粒剂。', 'US10/497058', 1038326400, 'US7622010B2', 1258992000, 1105545600, NULL, 1258992000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 19, 2, 0, 0, 0, NULL, NULL, NULL, '2001362436 | 2002298621', 'JP | JP', 1006876800, 10, 16, NULL, NULL, 30, 6, 2, 2, 4, NULL, '849', NULL, 'WYSZOMIERSKI, GEORGE', NULL, 'EP0270934A1 | EP0270934B1 | EP0429881A2 | EP0991086A1 | EP1020285A2 | JP1974119193A | JP1976020593A | JP1982124599A | JP1986179801A | JP1988110521A | JP1988237402A | JP1989114008A | JP1989127643A | JP1992071632A | JP1992100532A | JP1994028213A | JP1994039267A | JP1998058198A | JP1998140202A | JP1999131101A | JP2001137684A | US4770723A | US4792368A | US5000800A | US5124100A | US5383978A | US5575830A | US5666635A | US6187259B1 | US7214343B2', 'US10375901B2 | US10674681B2 | US20080241568A1 | US20130049910A1 | US8439998B2 | US8823478B2', 'Kishimoto, et al. \"Magnetic properties of sintered sendust alloys using powders granulated by spray drying method\", Journal of Materials Science; vol. 38, No. 16; Abstract; Aug. 2003. cited by other. | Official Communication and Translation of Official Communication, Issued Aug. 1, 2005, German patent application file No. 102 97 484.5-24. cited by other . | Specification and Drawings for Related U.S. Appl. No. 10/473,335, filed Mar. 29, 2004. | Specification and Drawings for Related U.S. Appl. No. 10/473,335, filed Mar. 29, 2004. cited by other .', 1, '\\20220510\\2e62503b3e61460ca82275bf57f98a8a.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 38962, 38940, 38939, 16);
INSERT INTO `os_patent` VALUES (22801, 'HERSTELLUNGSVERFAHREN FÜR EINEN PERMANENTMAGNETEN UND PRESSEINRICHTUNG', '制造永磁体和压力装置的方法', 'DE60213973T2', 'An anisotropic bond magnet is produced at low costs with problems by remanent magnetization avoided. A method of producing an anisotropic bond magnet by supplying magnetic powder (HDDR powder) into the cavity of a press device and molding it. A weak magnetic field consisting of a static magnetic field is formed in a space including the cavity by using a constantly−magnetized magnetic member, and magnetic powder is moved into the cavity with magnetic powder oriented in a direction parallel to the direction of a weak magnetic field. Next, magnetic powder is compressed in the cavity to produce a compact.', '各向异性粘结磁体以低成本生产，并且避免了剩余磁化的问题。一种通过将磁粉（HDDR粉末）供应到压制装置的腔体中并将其模制而制造各向异性粘结磁体的方法。通过使用恒定磁化的磁性构件在包括空腔的空间中形成由静磁场组成的弱磁场，并且磁粉移动到空腔中，磁粉沿与弱磁方向平行的方向取向领域。接下来，在腔体中压缩磁粉以产生压块。', 'DE60213973', 1038758400, 'DE60213973T2', 1166025600, 1159372800, NULL, 1166025600, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 19, 3, 0, 0, 0, NULL, NULL, NULL, '2001393880', 'JP', 1009296000, 12, 13, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\743ca937796e4ddd87ff578934e13157.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 38963, 38965, 38964, 13);
INSERT INTO `os_patent` VALUES (22802, 'Production method for permanent magnet and press device', '永磁体和压力装置的制造方法', 'US7371290B2', 'To avoid various problems caused by remnant magnetization and produce an anisotropic bonded magnet at a reduced cost, a method for producing an anisotropic bonded magnet by feeding a magnetic powder (such as an HDDR powder) into the cavity of a press machine and compacting it is provided. A weak magnetic field is created as a static magnetic field in a space including the cavity by using a magnetic member that is steadily magnetized. The magnetic powder being transported into the cavity is aligned parallel to the direction of the weak magnetic field. Next, the magnetic powder is compressed in the cavity, thereby obtaining a compact.', '为了避免由残余磁化引起的各种问题并以降低的成本生产各向异性粘结磁体，通过将磁粉（例如HDDR粉末）供给到压力机的腔体中并压实它来制造各向异性粘结磁体的方法是提供。通过使用稳定磁化的磁性构件，在包括空腔的空间中产生弱磁场作为静磁场。被输送到空腔中的磁粉平行于弱磁场的方向排列。接下来，磁粉在腔中被压缩，从而获得紧凑。', 'US10/474546', 1038758400, 'US7371290B2', 1210608000, 1087401600, NULL, 1210608000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 3, 0, 0, 0, NULL, NULL, NULL, '2001393880', 'JP', 1009296000, 12, 13, NULL, NULL, 10, 1, 0, 1, 2, NULL, '849', NULL, 'SHEEHAN, JOHN P.', NULL, 'EP1447827A1 | JP2001093712A | JP2001192705A | JP2001226701A | US20010018029A1 | US20040241034A1 | US4888512A | US4981532A | US6432158B1 | US6432354B2', 'DE102013205101A1', 'Machine English Language Translation of Japanse Patent Document No. JP2001-226701A. cited by examiner . | Supplementary European Search Report Dated Feb. 18, 2005 for EP 02 78 6003. cited by other.', 1, '\\20220510\\f4fd0ffb5ff74bd0b612609c156b252a.png', NULL, NULL, 1, NULL, NULL, 11, NULL, NULL, NULL, 38963, 38965, 38964, 13);
INSERT INTO `os_patent` VALUES (22803, 'Production method for permanent magnet and press device', '永磁体和压力装置的制造方法', 'EP1391902B1', 'To avoid various problems caused by remnant magnetization and produce an anisotropic bonded magnet at a reduced cost, a method for producing an anisotropic bonded magnet by feeding a magnetic powder (such as an HDDR powder) into the cavity of a press machine and compacting it is provided. A weak magnetic field is created as a static magnetic field in a space including the cavity by using a magnetic member that is steadily magnetized. The magnetic powder being transported into the cavity is aligned parallel to the direction of the weak magnetic field. Next, the magnetic powder is compressed in the cavity, thereby obtaining a compact.', '为了避免由残余磁化引起的各种问题并以降低的成本生产各向异性粘结磁体，通过将磁粉（例如HDDR粉末）供给到压力机的腔体中并压实它来制造各向异性粘结磁体的方法是提供。通过使用稳定磁化的磁性构件，在包括空腔的空间中产生弱磁场作为静磁场。被输送到空腔中的磁粉平行于弱磁场的方向排列。接下来，磁粉在腔中被压缩，从而获得紧凑。', 'EP2002786003', 1038758400, 'EP1391902B1', 1155657600, 1077638400, NULL, 1155657600, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 19, 3, 0, 0, 0, NULL, NULL, NULL, '2001393880', 'JP', 1009296000, 12, 13, NULL, NULL, 3, 0, 0, 0, 0, NULL, '857', NULL, NULL, NULL, 'EP1447827A1 | JP2001192705A | JP2001226701A', NULL, NULL, 1, '\\20220510\\f7ce3d8d39d14cba9f939e7d7cc9a972.png', NULL, NULL, 1, NULL, NULL, 13, NULL, NULL, '有效:DE,FR,NL | 失效:IT,ES', 38963, 38965, 38964, 13);
INSERT INTO `os_patent` VALUES (22804, '希土類-鉄-硼素系合金、ならびに磁気異方性永久磁石粉末およびその製造方法', '稀土 - 铁 - 硼基合金，磁各向异性永磁体粉末及其制造方法', 'JP4039229B2', '【課題】 希土類-鉄-硼素系合金の溶湯を冷却することによって母合金を作製する工程と、前記母合金に対してHDDR処理を施す工程とを包含する磁気異方性磁石粉末の製造方法である。\n\n【解決手段】 母合金を作製する工程は、合金の溶湯を冷却部材に接触させることにより、合金の溶湯を冷却し、内部に希土類リッチ相が分散した複数のR2Fe14B型結晶(Rは希土類元素およびイットリウムからなる群から選択された少なくとも1種の元素)を含む凝固合金層を形成する工程を含む。', '要解决的问题：提供一种制造具有磁各向异性的磁铁粉末的方法，其包括通过冷却稀土 - 铁 - 硼基础的熔融合金制造母合金的步骤，以及对母合金进行加工的步骤到HDDR（加氢 - 歧化 - 解吸 - 重组处理）。解决方案：制造母合金的步骤包括形成固化合金层的步骤，该合金层含有几种R SB2S &lt;/ SB&gt; Fe &lt;SB&gt; 14 &lt;/ SB&gt; B型晶体（R是选择的至少一种元素）通过使熔融合金与冷却构件接触，冷却熔融合金，从稀土元素和钇中分离出稀土元素和钇。Ž', 'JP2002365686', 1040054400, 'JP4039229B2', 1201622400, 1066924800, NULL, 1195142400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 25, 2, 0, 0, 0, NULL, NULL, NULL, '2001385941 | 2002030392', 'JP | JP', 1008691200, 3, 13, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, '米田 健志', NULL, 'JP2002301554A', NULL, NULL, 1, '\\20220510\\9f83c09730c5436dbc2f1502e7c26a1e.png', NULL, NULL, 1, NULL, NULL, 21, NULL, NULL, NULL, 38966, 38968, 38967, 13);
INSERT INTO `os_patent` VALUES (22805, 'R-Fe-B系焼結磁石の製造方法', '制造R-Fe-B基烧结磁体的方法', 'JP4380983B2', '【課題】切断や研磨により発生する製品にならない端材の量を低減する希土類永久磁石の製造方法を提供する。\n\n【解決手段】R-Fe-B系希土類永久磁石用粗粉を、酸素濃度が0.01体積%以下の窒素ガス中またはアルゴンガス中、あるいはこれらの混合ガス中で微粉砕し、微粉砕後の微粉を鉱物油または合成油または植物油あるいはこれらの混合油から選ばれる少なくとも1種の溶媒中に回収してスラリー状の原料とし、前記スラリー状の原料を磁界中で湿式成形して成形体とし、前記溶媒と同じ組成の油または混合油を高圧で成形体に吹きつけることにより成形体の切断を行うことを特徴とする成形体の加工方法。\n\n【選択図】図1', '要解决的问题：提供一种稀土永磁体的制造方法，用于减少由切割或抛光引起的不成为产品的切屑量。 ŽSOLUTION：在模塑的加工方法中，用于R-Fe-B族稀土永磁体的粗粉在氮气，氩气或其混合气体中被粉碎成细粉末，其中氧气浓度为将0.01％（体积）以下的细粉末粉碎后的细粉末收集到选自矿物油，合成油，植物油及其混合油中的至少一种溶剂中，制成浆料原料。将浆料原料在磁场中湿成型并成型，在高压下将与溶剂或混合油相同组成的油吹到成型体上，从而切割成型体。 Ž', 'JP2002376388', 1040832000, 'JP4380983B2', 1260288000, 1090425600, NULL, 1254412800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 0, 2, 0, 0, 0, NULL, NULL, NULL, '右田 勝則', NULL, NULL, 'CN109249087A | CN109249087B', NULL, 1, '\\20220510\\ce1abd8c4a5d4a3a8f3810bd25c983ec.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 38969, 38971, 38970, 3);
INSERT INTO `os_patent` VALUES (22806, '耐酸化性希土類系磁石粉末の製造方法', '一种抗氧化稀土磁粉的生产方法', 'JP4411840B2', '【課題】耐酸化性に優れるとともに高い磁気特性を示す希土類系ボンド磁石を製造するために有用な、耐酸化性希土類系磁石粉末の製造方法を提供すること。\n\n【解決手段】0.1重量%~5重量%のリン酸と5ppm~1000ppmの金属イオンを有機溶剤に含有せしめてなる処理液に、希土類系磁石粉末を浸漬して混合攪拌した後、加熱乾燥することを特徴とする。\n\n【選択図】  なし', '要解决的问题：提供抗氧化稀土系统磁铁粉末，用于制造抗氧化性优异且磁铁特性高的稀土系粘结磁铁。ŽSOLUTION：这种制造抗氧化稀土系统磁铁粉末的方法是为了将稀土系统磁铁粉末浸入由含有0.1wt％磷酸的磷酸盐构成的处理液中。％至5重量％。在有机溶剂中的％和金属离子为5ppm至1000ppm，并将其混合并搅拌，然后加热并干燥。Ž', 'JP2002382292', 1040918400, 'JP4411840B2', 1265731200, 1091030400, NULL, 1259251200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 9, 0, 0, 0, 0, NULL, NULL, NULL, '右田 勝則', NULL, 'JP1989011304A | JP1990070003A | JP1992021702A | JP2000058312A | JP2002124406A | JP2002359107A | JP2003318013A | JP2005191426A | WO2002006562A1', NULL, NULL, 1, '\\20220510\\45c318a560cf4e74aa8dea1e36969d20.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 38972, 38974, 38973, 2);
INSERT INTO `os_patent` VALUES (22807, '高耐食性永久磁石およびその製造方法', '高耐腐蚀永磁体及其制造方法', 'JP4225063B2', '【課題】苛酷環境下においても高耐食性を発揮する希土類系永久磁石およびその製造方法を提供すること。\n\n【解決手段】本発明の高耐食性永久磁石は、珪酸リチウムと樹脂を構成成分とし、樹脂が0.1重量%~50重量%の含量で均一分散した樹脂分散被膜を、希土類系永久磁石の表面に形成した金属を構成成分とする被膜を介して、または、さらにその表面に積層形成した化成処理被膜を介して、有することを特徴とする。\n\n【選択図】  なし', '要解决的问题：提供即使在恶劣环境下也具有高防腐蚀性的稀土永磁体及其制造方法。 ŽSOLUTION：高耐腐蚀永磁体具有树脂分散膜，其包含硅酸锂和树脂作为组分，并且其中树脂通过含有形成的金属的膜均匀地以0.1wt％至50wt％的含量分散。在树脂分散膜的表面上层叠和形成的稀土永磁体或形成处理膜上。 Ž', 'JP2003004788', 1042128000, 'JP4225063B2', 1234886400, 1091635200, NULL, 1228406400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 10, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '右田 勝則', NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 13, NULL, NULL, NULL, 38975, 38977, 38976, 2);
INSERT INTO `os_patent` VALUES (22808, 'Sinter magnet made from rare earth-iron-boron alloy powder for magnet', '磁铁用稀土-铁-硼合金粉制成的烧结磁铁', 'EP1479787B2', 'A rare-earth-iron-boron based alloy powder, in which a heavy rare-earth element such as Dy is present at a higher concentration in a main phase than in a grain boundary phase and which can be sintered easily, and a method of making such an alloy powder are provided. A rare-earth-iron-boron based magnet alloy according to the present invention includes, as a main phase, a plurality of R2Fe14B type crystals (where R is at least one element selected from the group consisting of the rare-earth elements and yttrium) in which rare-earth-rich phases are dispersed. The main phase includes Dy and/or Tb at a higher concentration than a grain boundary phase does.', '稀土 - 铁 - 硼基合金粉末，其中诸如Dy的重稀土元素在主相中比在晶界相中以更高的浓度存在并且可以容易地烧结，并且制造这种合金粉末。根据本发明的稀土 - 铁 - 硼基磁体合金包括作为主相的多个R2Fe14B型晶体（其中R是选自稀土元素和钇中的至少一种元素） ）其中分散有富稀土相。主相包括浓度高于晶界相的Dy和/或Tb。', 'EP2003737488', 1044288000, 'EP1479787B2', 1467734400, 1101225600, NULL, 1467734400, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 20, 3, 0, 0, 0, NULL, NULL, NULL, '2002028207', 'JP', 1012838400, 12, 12, NULL, NULL, 6, 0, 0, 0, 3, NULL, '852', NULL, NULL, NULL, 'EP0994493A2 | JP1986024824A | US20050098238A1 | WO2002018078A2', NULL, '\"Magnetic Properties of Nd-Fe-B Magnets alloyed with Dy, Al and Co\" A.A. Kiiski et al. Paper No. 19P022t at the Int. Workshop on Rare-Earth Magnets and their Applications, Kyoto, Japan, 16-19 May, 1989 (Proceedings Book: The Society of Non-Traditional Technology, 1-2-8, Tornanomon, Minatoku, Tokyo, 105 Japan), pages 501-507. | PATENT ABSTRACTS OF JAPAN vol. 1995, no. 08, 29 September 1995 (1995-09-29) & JP 07 122413 A (HITACHI METALS LTD), 12 May 1995 (1995-05-12) | PATENT ABSTRACTS OF JAPAN vol. 1996, no. 05, 31 May 1996 (1996-05-31) & JP 08 013078 A (SHOWA DENKO KK), 16 January 1996 (1996-01-16)', 1, '\\20220510\\13ebebcbe6fa423f89c775c760fede00.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, '有效:DE,FR,NL', 38978, 38980, 38979, 13);
INSERT INTO `os_patent` VALUES (22809, 'SINTERMAGNET AUS SELTENERDMETALL-EISEN-BOR-LEGIERUNGSPULVER FÜR MAGNET', '烧结磁铁由稀土金属铁硼合金粉末制成磁铁', 'DE60337912T2', 'A rare earth-iron-boron alloy powder in which heavy rare earth elements such as dysprosium are present in the main phase in a relatively higher concentration than in a grain boundary phase and which can be easily sintered; and a process for producing the powder. The rare earth-iron-boron alloy for magnets contains, as the main phase, R2Fe14B-form crystals having a rare-earth-rich phase dispersed therein (R is at least one element selected from the group consisting of rare earth elements and yttrium), the main phase containing dysprosium and/or terbium in a higher concentration than in the grain boundary phase.', '一种稀土 - 铁 - 硼合金粉末，其中主要相中存在重稀土元素如镝，其浓度相对高于晶界相，并且易于烧结;以及生产粉末的方法。用于磁体的稀土 - 铁 - 硼合金包含作为主相的R2Fe14B型晶体，其中分散有富稀土相（R是选自稀土元素和钇中的至少一种元素）含有镝和/或铽的主相浓度高于晶界相。', 'DE60337912', 1044288000, 'DE60337912T2', 1312300800, 1312300800, NULL, 1312300800, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 39, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 19, NULL, NULL, NULL, 38981, 38980, 38982, 13);
INSERT INTO `os_patent` VALUES (22810, '磁界発生装置の製造方法', '制造磁场产生装置的方法', 'JP4085833B2', '【課題】 輸送後における磁界強度の低下および磁界均一性の悪化を抑制できる、磁界発生装置およびその製造方法を提供する。\n\n【解決手段】 磁界発生装置10は一対の板状継鉄12a,12bを含む。一対の板状継鉄12a,12bのそれぞれの対向面側には永久磁石群14a,14bが配置され、永久磁石群14a,14bのそれぞれの対向面側には磁極板16a,16bが固着される。永久磁石群14a,14bは永久磁石18を含む。磁極板16a,16bは、環状突起24と環状突起24の外側面に設けられた漏洩磁束防止用の永久磁石28とを含む。永久磁石18,28は、着磁率が80%以上99.9%以下のR-Fe-B系磁石を含む。製造時には、組み立てられた磁界発生装置10全体を40℃以上70℃以下で加温する。', '要解决的问题：提供一种磁场产生装置及其制造方法，其能够抑制运输后磁场强度的降低和磁场均匀性的恶化。解决方案：该磁场产生装置10包括一对板状轭12a，12b。永磁体组14a，14b布置在一对板状磁轭12a，12b的相应的相对面上，并且磁极板16a，16b粘附到永磁体组14a，14b的相应的相对的两侧。永磁体组14a，14b包括永磁体18.磁极板16a，16b包括环形凸起24和用于防止漏磁通的永磁体28，其设置在环形凸起24的外侧面上。永磁体18， 28包括R-Fe-B基磁体，磁化率为80％至99.9％。在制造过程中，整个组合磁场发生装置10在40℃-70℃下加热。 Ž', 'JP2003035128', 1045065600, 'JP4085833B2', 1210694400, 1067270400, NULL, 1204214400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 2, 0, 0, 0, NULL, NULL, NULL, '2002037746', 'JP', 1013702400, 2, 13, NULL, NULL, 13, 0, 0, 0, 0, NULL, NULL, NULL, '右▲高▼ 孝幸', NULL, 'JP1985076110A | JP1994163239A | JP1995029716A | JP1996339916A | JP1997056691A | JP1997131025A | JP1998275720A | JP1998326710A | JP2000051175A | JP2001044031A | JP2001085223A | JP2001326118A | US6166617A', NULL, NULL, 1, '\\20220510\\3624fc5597874216a97650a7d0810996.png', NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 38983, 38985, 38984, 13);
INSERT INTO `os_patent` VALUES (22811, '希土類合金の切断方法', '切削稀土合金的方法', 'JP3770879B2', '【課題】 ワイヤソー装置で水を主成分とする冷却液を用いて希土類合金を切断する際のワイヤソーの寿命を長くする。\n\n【解決手段】 芯線22に砥粒24を樹脂層26によって固着させたワイヤソー20を用いる希土類合金の切断方法であって、希土類合金がワイヤソーによって切削される部分を25℃における表面張力が25mN/m〜60mN/mの範囲内にある水を主成分とする冷却液中に浸漬した状態で、ワイヤソーを走行させることによって希土類合金を切削する工程を包含し、ワイヤソーとして、長さ方向において互いに隣接する砥粒間の平均距離が砥粒の平均粒径の150%以上400%未満の範囲内にあり、砥粒が樹脂層の表面から突き出している部分の平均高さが砥粒の平均粒径の70%以下であって、且つ、樹脂層の芯線に対する偏肉率が40%以下であるワイヤソーを用いる。', '要解决的问题:在用电冷剂切割稀土合金时,将焊丝锯出寿命,主要由电线锯装置中的水组成。\n\n使用磨料颗粒24固定到芯线22的线锯20切割稀土合金的方法由线锯20固定,其中稀土合金由线锯25°C切割稀土合金的部分和25°CN / m。在水中浸入的态在为-60mN / m的光子中,它包括通过行驶线锯和相邻的稀土合金切割稀土合金的步骤在纵向方向上彼此作为电线看到磨粒之间的平均距离在磨粒的平均粒径的150%以上且小于400%的范围内,以及该部分的平均高度从树脂层的表面突出是磨料颗粒的平均粒度。它为70%以下,并且相对于树脂层的芯线的偏差速率为40%或更小的线锯是用过的。', 'JP2003045961', 1046016000, 'JP3770879B2', 1145980800, 1069084800, NULL, 1140105600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 20, 3, 0, 0, 0, NULL, NULL, NULL, '2002055164', 'JP', 1014912000, 2, 8, NULL, NULL, 10, 0, 0, 0, 0, NULL, NULL, NULL, '中島 成', NULL, 'JP1997070820A | JP1997070821A | JP1998324889A | JP2000052226A | JP2000141199A | JP2001025967A | JP2001079748A | JP2001138205A | JP2002036091A | JP2002036113A', NULL, NULL, 1, '\\20220510\\5ba36e2d7ace46e0a68cd9d447441f3a.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 38986, 38988, 38987, 8);
INSERT INTO `os_patent` VALUES (22812, 'Method of cutting rare-earth alloy', '切削稀土合金的方法', 'US7025054B2', 'A method of cutting a rare-earth alloy with a wire saw, obtained by fixing abrasive grains on a core wire with a resin layer, includes the step of moving the wire saw while a portion of the rare-earth alloy being machined with the wire saw is immersed in a coolant, which is mainly composed of water and has a surface tension of about 25 mN/m to about 60 mN/m at about 25° C., thereby cutting the rare-earth alloy. In the wire saw, an average distance between two of the abrasive grains, which are adjacent to each other in a length direction, is about 150% to less than about 400% of the average grain size of the abrasive grains, an average height of portions of the abrasive grains, protruding from the surface of the resin layer, is about 70% or less of the average grain size of the abrasive grains, and a thickness deviation percentage of the resin layer with respect to the core wire is about 40%.', '一种用线锯切割稀土合金的方法，其通过用树脂层将磨粒固定在芯线上而获得，该方法包括移动线锯的步骤，同时用线材加工稀土合金的一部分锯浸渍在主要由水构成的冷却剂中，并且在约25℃下具有约25mN / m至约60mN / m的表面张力，由此切割稀土合金。在线锯中，在长度方向上彼此相邻的两个磨粒之间的平均距离为磨粒的平均粒径的约150％至小于约400％，平均高度从所述树脂层的表面突出的所述磨粒的一部分为所述磨粒的平均粒径的约70％以下，所述树脂层相对于所述芯线的厚度偏差率为约40％ 。', 'US10/506318', 1046188800, 'US7025054B2', 1144684800, 1121875200, NULL, 1144684800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 19, 3, 0, 0, 0, NULL, NULL, NULL, '2002055164', 'JP', 1014912000, 6, 8, NULL, NULL, 15, 10, 7, 9, 0, NULL, '850', NULL, 'HAIL, III, JOSEPH J.', 'MULLER, BRYAN', 'JP1993138537A | JP1996057847A | JP1997290361A | JP1999198018A | JP1999198020A | JP2000218504A | JP2001047363A | JP2001164240A | JP2001232570A | JP2002036113A | JP2003080449A | US4770723A | US4792368A | US6070570A | US6837778B2', 'US10391673B2 | US20100126488A1 | US20100126489A1 | US20100126490A1 | US20100170495A1 | US20120006312A1 | US8056551B2 | US8065995B2 | US8261730B2 | US8851059B2', NULL, 1, '\\20220510\\23d2f01e9417462883e5931d7dcd809a.png', NULL, NULL, 1, NULL, NULL, 26, NULL, NULL, NULL, 38989, 38988, 38987, 8);
INSERT INTO `os_patent` VALUES (22813, '希土類合金、希土類焼結磁石およびその製造方法', '稀土合金，稀土烧结磁体及其制造方法', 'JP4415551B2', '【課題】従来の重希土類元素添加系の保磁力を維持しつつ、重希土類元素の使用量を減少させる。\n\n【解決手段】本発明の希土類合金は、11原子%以上18原子%以下のR(Rは、Yを含む希土類元素の内から選択される少なくとも1種の希土類元素)と、5原子%以上12原子%以下のQ(Qはボロンまたはボロンと炭素との混合物)と、0原子%超6原子%未満のM(Mは、VおよびMoの内の少なくとも1種の元素)とを含み、T(Tは、FeまたはFeとFe以外の少なくとも1種の遷移金属元素との混合物)、必要に応じて添加される微量添加元素および不純物が残部を占める組成を有するとともに、R2Fe14B型結晶構造の主相を有し、主相中にMが過飽和に固溶している。\n\n【選択図】  図4A', '要解决的问题：减少重稀土元素的消耗量，同时保持添加重稀土元素的常规系列的矫顽力。 ŽSOLUTION：稀土合金的成分由原子组成，含11％至18％的R（R是至少一种稀土元素，选自稀土元素，包括Y），5至12％Q（Q为硼或混合物）硼和碳），> 0至 Fe  14  B型晶体结构的主相，并且允许M在初级相中进入固溶体至过饱和状态。 Ž', 'JP2003069766', 1047571200, 'JP4415551B2', 1266336000, 1097078400, NULL, 1259856000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '井上 猛', NULL, 'JP1989007502A | JP1990007403A | JP1993295490A | JP1996051007A | JP1997017677A | JP2000323310A', NULL, NULL, 1, '\\20220510\\486dbd32727245009ee838087a1e58b4.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 38990, 38992, 38991, 2);
INSERT INTO `os_patent` VALUES (22814, '極異方性リング磁石および成形金型', '极性各向异性环形磁铁和成型模具', 'JP4320710B2', '【課題】磁極同士の間隔のバラツキが少なくコギングトルクの小さいものを安価に得られる極異方性リング磁石を提供する。\n\n【解決手段】スキュー配向された一体成形の極異方性リング磁石であって、軸に平行な磁極部を複数有し、かつ多段成形による焼結体接合部が実質的に存在しない。さらに具体的には、一体成形された極異方性リング磁石であって、前記極異方性リング磁石は軸に平行な磁極部とらせん状の磁極部を具備し、前記軸に平行な磁極部とらせん状の磁極部は連続的に同極が繋がっていることを特徴とする。\n\n【選択図】    図1', '要解决的问题：提供一种极性各向异性环形磁铁，它可以获得低成本的不规则性，磁极间距离变化小，齿槽转矩小。\n\n偏斜取向并一体形成的极性各向异性环形磁铁具有多个平行于轴线的磁极部分，并且由于多级模制而基本上没有烧结体接合部分。更具体地说，它是整体形成的极性各向异性环形磁铁，其中极性各向异性环形磁铁具有平行于轴线的磁极部分和螺旋磁极部分，以及平行于轴线的磁极并且螺旋磁极部分用相同的磁极连续地连接。\n\n点域1', 'JP2003071550', 1047830400, 'JP4320710B2', 1251216000, 1073491200, NULL, 1244736000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, '2002094957', 'JP', 1017331200, 3, 3, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '三島木 英宏', NULL, NULL, NULL, NULL, 1, '\\20220510\\8448bea6b9e64e74b94cacef4a43f6d4.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 38993, 38995, 38994, 3);
INSERT INTO `os_patent` VALUES (22815, 'Verfahren zum Pressen eines Seltenerdmetall-Legierungspulvers und Verfahren zur Herstellung eines Sinterkörpers aus einer Seltenerdmetall-Legierung', '压制稀土合金粉末的方法和制造稀土合金烧结体的方法', 'DE10392157B4', 'A right angle press molding method of rare earth alloy powder for making it possible to produce a sintered magnet having excellent magnetic characteristics. The press molding method of rare earth alloy powder employs a die formed of a nonmagnetic body having a through hole forming a cavity and yokes arranged on the opposite sides of the through hole. The press molding method comprises a step for preparing rare earth alloy powder, a step for filling the cavity of the die with rare earth alloy powder, and a step for compressing the rare earth alloy powder filling the cavity by means of a pair of pressing planes facing each other. During the period of compression step, a pulse magnetic field is applied substantially perpendicularly to the compressing direction only after the apparent density of the rare earth alloy powder in the cavity reaches a specified value not lower than 47% of true density.', '一种稀土合金粉末的直角压制成型方法，用于制造具有优异磁特性的烧结磁体。稀土合金粉末的压制成型方法采用由非磁性体形成的模具，所述非磁性体具有形成空腔的通孔和布置在所述通孔的相对侧上的轭。压制成型方法包括制备稀土合金粉末的步骤，用稀土合金粉末填充模具空腔的步骤，以及用一对压制平面压缩填充空腔的稀土合金粉末的步骤面对面。在压缩步骤期间，仅在腔中稀土合金粉末的表观密度达到不低于真密度的47％的规定值之后，基本上垂直于压缩方向施加脉冲磁场。', 'DE10392157', 1049385600, 'DE10392157B4', 1169654400, 1098892800, NULL, 1169654400, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B4', NULL, NULL, 13, 2, 0, 0, 0, NULL, NULL, NULL, '2002110950', 'JP', 1018540800, 8, 9, NULL, NULL, 6, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, 'JP1989276604A | JP1997312230A | JP2003023341A | US4770723A | US4792368A', NULL, NULL, 1, '\\20220510\\d753e610f89c4af089870dab32bf851b.png', NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 38996, 38998, 38997, 9);
INSERT INTO `os_patent` VALUES (22816, 'Method for press molding rare earth alloy powder and method for producing sintered object of rare earth alloy', '稀土合金粉末的压制成型方法和稀土合金烧结体的制造方法', 'US7045092B2', 'A perpendicular pressing/compacting method for a rare-earth alloy powder is provided to produce a sintered magnet with excellent magnetic properties. A method for pressing a rare-earth alloy powder by using a die is provided. The die is made of a non-magnetic material and has a die hole to define a cavity and a pair of yoke members provided on both sides of the cavity. The method includes the steps of: providing the rare-earth alloy powder; filling the cavity of the die with the rare-earth alloy powder; and compressing the rare-earth alloy powder, loaded in the cavity, between a pair of opposed press surfaces. A pulse magnetic field substantially perpendicular to a compressing direction is not applied until the apparent density of the rare-earth alloy powder in the cavity reaches a predetermined value, at least equal to 47% of the true density thereof, while the compressing step is being carried out.', '提供一种用于稀土合金粉末的垂直压制/压制方法，以制造具有优异磁性的烧结磁体。提供一种使用模具对稀土类合金粉末进行加压的方法。模具由非磁性材料制成，并具有限定空腔的模具孔和设置在空腔两侧的一对轭构件。该方法包括以下步骤：提供稀土合金粉末;用稀土合金粉末填充模具的腔;以及将装载在所述腔中的稀土合金粉末压缩在一对相对的压制表面之间。基本上垂直于压缩方向的脉冲磁场不施加，直到腔中的稀土合金粉末的表观密度达到至少等于其真实密度的47％的预定值，而压缩步骤执行。', 'US10/489338', 1049385600, 'US7045092B2', 1147708800, 1101916800, NULL, 1147708800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 2, 0, 0, 0, NULL, NULL, NULL, '2002110950', 'JP', 1018540800, 8, 9, NULL, NULL, 21, 15, 4, 7, 2, NULL, '849', NULL, 'JENKINS, DANIEL', NULL, 'JP1989276604A | JP1993234789A | JP1997020953A | JP1997312229A | JP1997312230A | JP2000323341A | JP2002047503A | US4600555A | US4770723A | US4792368A | US4888512A | US4990306A | US5049053A | US5167915A | US5186766A | US5250255A | US5383978A | US5628047A | US6321800B1 | US6767505B2', 'DE102010013544A1 | US10395823B2 | US11270841B2 | US20100034688A1 | US20110070118A1 | US20110210810A1 | US8128757B2 | US8695210B2 | US9044834B2 | US9067284B2 | US9095940B2 | US9144865B2 | US9336932B1 | US9831034B2 | US9953750B2', 'JP 09031229 A, English translation of Example, 10 pages, Dec. 1997. | JP09-31229A, English translation of Example, 10 pages, Dec. 1997. cited by examiner.', 1, '\\20220510\\c59eaf1547ff4c09ba3f78eb9d9858da.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 38996, 38998, 38997, 9);
INSERT INTO `os_patent` VALUES (22817, 'アルカリ珪酸塩被膜の劣化防止方法', '防止碱金属硅酸盐涂膜降解的方法', 'JP4449342B2', '【課題】冷媒や潤滑油の存在下を使用環境とするアルカリ珪酸塩被膜を表面に有する希土類系永久磁石を当該環境で使用するに際し、当該被膜の劣化を防止して長期に渡って高い耐食性を発揮せしめる方法を提供すること。\n\n【解決手段】アルカリ珪酸塩被膜中に熱可塑性樹脂を0.1重量%~50重量%の含量で均一分散させることを特徴とする。\n\n【選択図】 なし', '要解决的问题：在使用环境中，在制冷剂或润滑油存在下，在其表面上提供具有碱金属硅酸盐涂层的稀土基永磁体，其中防止涂层劣化并且长时间获得高耐腐蚀性提供一种演示方法。\n\n溶液：热塑性树脂均匀地分散在碱金属硅酸盐薄膜中，含量为0.1％（重量）至50％（重量）。\n\n【选择图】无', 'JP2003145584', 1053619200, 'JP4449342B2', 1271174400, 1077120000, NULL, 1265299200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 8, 2, 0, 0, 0, NULL, NULL, NULL, '2002159150', 'JP', 1022774400, 2, 2, NULL, NULL, 0, 2, 2, 2, 0, NULL, NULL, NULL, '田中 純一', NULL, NULL, 'JP2013206956A | JP5642103B2', NULL, 1, '\\20220510\\aaaddd8a2261445fb3ef2453ba7138cd.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 38999, 39001, 39000, 2);
INSERT INTO `os_patent` VALUES (22818, 'Iron-based rare earth alloy nanocomposite magnet and method for producing the same', '铁基稀土合金纳米复合磁体及其制造方法', 'PH12003500443A1', NULL, NULL, 'PH12003500443', 1054483200, 'PH12003500443A1', NULL, 0, NULL, NULL, '菲律宾', NULL, NULL, NULL, NULL, 3, 2, NULL, NULL, NULL, NULL, 'A1', NULL, NULL, 63, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\bc5eff580d834a6bbcca7ee2785b3e80.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 39002, 39004, 39003, 1);
INSERT INTO `os_patent` VALUES (22819, 'Rare earth sintered magnet and method for production thereof', '稀土烧结磁铁及其制造方法', 'EP1494250B1', 'A rare-earth sintered magnet with excellent corrosion resistance and sinterability and a method for producing such a magnet are provided. The rare-earth sintered magnet includes an R2T14Q type tetragonal compound (where R is at least one rare-earth element, T is at least one transition metal element always including Fe, and Q is boron and/or carbon) as a main phase and a grain boundary phase surrounding the main phase. The R2T14Q type tetragonal compound as the main phase includes Cr, which substitutes for a portion of Fe, and carbon, which substitutes for a portion of boron, as respective essential elements. The concentration of carbon in the main phase is higher than that of carbon in the grain boundary phase.', '本发明提供一种耐腐蚀性和烧结性优异的稀土类烧结磁铁及其制造方法。稀土烧结磁体包括R2T14Q型四方化合物（其中R是至少一种稀土元素，T是至少一种过渡金属元素，总是包括Fe，Q是硼和/或碳）作为主相和主相周围的晶界相。作为主相的R2T14Q型四方化合物包括代替一部分Fe的Cr和代替一部分硼的碳作为各自的必要元素。主相中的碳浓度高于晶界相中的碳浓度。', 'EP2003730855', 1054828800, 'EP1494250B1', 1419955200, 1104854400, NULL, 1419955200, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 20, 2, 0, 0, 0, NULL, NULL, NULL, '2002173330', 'JP', 1023897600, 8, 9, NULL, NULL, 9, 0, 0, 0, 0, NULL, '858', NULL, NULL, NULL, 'JP2000286118A | US4770723A | US4792368A', NULL, NULL, 1, '\\20220510\\5b02b821f0fa465c8bf6ed8a6ba75670.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, '有效:DE | 失效:FI,BE,PT,BG,DK,LU,FR,HU,SE,SI,MC,SK,GB,IE,EE,CH,IT,GR,ES,AT,CY,CZ,RO,LI,TR,NL', 39005, 39007, 39006, 10);
INSERT INTO `os_patent` VALUES (22820, 'GESINTERTER SELTENERDMAGNET UND VERFAHREN ZU SEINER HERSTELLUNG', '烧结稀土磁铁和生产工艺', 'DE60347168T2', 'A rare earth sintered magnet which has a main phase of an R2T14Q type tetragonal compound (R represents at least one rare earth element, T represents at least one transition metal comprising Fe, and Q represents boron and/or carbon) and a grain boundary phase surrounding the main phase, characterized in that the R2T14Q type tetragonal compound in the main phase comprises, as essential elements, Cr substituting for a part of Fe and carbon substituting for a part of boron, and the main phase has a carbon concentration higher than that of the grain boundary phase; and a method for producing the rare earth sintered magnet. The rare earth sintered magnet is excellent in corrosion resistance and sintering characteristics.', '一种稀土烧结磁体，其主相为R2T14Q型四方化合物（R代表至少一种稀土元素，T代表至少一种包含Fe的过渡金属，Q代表硼和/或碳）和晶界相围绕主相，其特征在于主相中的R2T14Q型四方化合物包含作为必要元素的Cr代替部分Fe和碳取代部分硼，并且主相具有高于该部分的碳浓度。晶界相;以及稀土烧结磁体的制造方法。稀土烧结磁体具有优异的耐腐蚀性和烧结特性。', 'DE60347168', 1054828800, 'DE60347168T2', 1419955200, 1419955200, NULL, 1419955200, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 44, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 13, NULL, NULL, NULL, 39008, 39007, 39009, 10);
INSERT INTO `os_patent` VALUES (22821, '極異方性リング磁石の製造に用いる磁場中成形装置', '用于制造极性各向异性环形磁铁的磁场形成装置', 'JP3997427B2', '(修正有)\n\n【課題】表面磁束密度分布の正弦波整合率安定化と向上をはかり、コギングトルクを防止すること。\n\n【解決手段】磁化方向が磁極位置では法線方向で、隣接する磁極の中間位置では接線方向であるとともに、磁極位置とそれに隣接する中間位置との間を等角度ピッチの要素に分割した時、隣接する要素の磁化方向がほぼ一定の角度差を有する極異方性リング磁石。\n\n【選択図】図1', '（有纠正）\n\n本发明的目的是通过稳定和改善表面磁通密度分布的正弦波匹配率来防止齿槽转矩。\n\n当磁化方向是磁极位置处的法线方向并且相邻磁极之间的中间位置处切线时，磁极位置和相邻的中间位置被分成相等角度间距的元件，极性各向异性环形磁铁在相邻元件的磁化方向之间具有几乎恒定的角度差。\n\n[选图]图1', 'JP2003174032', 1055865600, 'JP3997427B2', 1193155200, 1108569600, NULL, 1187280000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 2, 0, 0, 0, NULL, NULL, NULL, '2002177326 | 2003144243', 'JP | JP', 1024329600, 2, 4, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '桑原 清', NULL, 'JP1996111968A | JP1997330841A | JP2001095214A | JP2002058229A | JP2003257762A', NULL, NULL, 1, '\\20220510\\cd4ab979d3a84279ad4eb530efa256b4.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39010, 39012, 39011, 4);
INSERT INTO `os_patent` VALUES (22822, 'Magnetic-field molding apparatus', '磁场成型装置', 'US6992553B2', 'A polar-anisotropic ring magnet having magnetization directions in alignment with its normal line at each magnetic pole position and in alignment with its tangential line at each middle position between adjacent magnetic poles, and having a substantially constant angle difference in a magnetization direction between adjacent elements, the elements being obtained by division at an equal angle pitch between the magnetic pole position and the middle position adjacent to the magnetic pole position.', '一种极性各向异性环形磁铁，其磁化方向在每个磁极位置处与其法线对齐并且在相邻磁极之间的每个中间位置处与其切线对齐，并且在相邻元件之间的磁化方向上具有基本恒定的角度差通过在磁极位置和与磁极位置相邻的中间位置之间以相等的角度间距分割获得元件。', 'US10/463399', 1055865600, 'US6992553B2', 1138636800, 1113408000, NULL, 1138636800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 2, 0, 0, 0, NULL, NULL, NULL, '2002177326 | 2003144243', 'JP | JP', 1024329600, 2, 4, NULL, NULL, 7, 13, 1, 3, 0, NULL, '859', NULL, 'BARRERA, RAMON M.', NULL, 'JP1996111968A | JP2000195714A | JP2000269062A | JP2002057018A | US20030160674A1 | US4185262A | US4547758A', 'CN104421174A | CN104421174B | US10989204B2 | US20050001502A1 | US20060139137A1 | US20070007840A1 | US20090127958A1 | US20090146518A1 | US20150056088A1 | US20190242389A1 | US7592889B2 | US7750776B2 | US9646751B2', NULL, 1, '\\20220510\\96bfa57f90a244a8bc69a4cf758f6735.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 39013, 39012, 39011, 4);
INSERT INTO `os_patent` VALUES (22823, 'Method of making rapidly solidified alloy for magnet', '制造快速凝固的磁铁合金的方法', 'US7160398B2', 'A melt of an alloy, represented (Fe1-mTm)100-x-y-zQxRyMz, where T is Co and/or Ni, Q is B and/or C, R is at least one rare-earth element, M is selected from Al, Si, Ti, V, Cr, Mn, Cu, Zn, Ga, Zr, Nb, Mo, Ag, Hf, Ta, W, Pt, Au and Pb; 10 at %≦x≦35 at %; 2 at %≦y≦10 at %; 0 at %≦z≦10 at %; and 0≦m≦0.5, is prepared. Next, the melt is brought into contact with, and rapidly cooled and solidified by, the surface of a rotating chill roller. The melt is teemed onto a guide member, of which the guide surface defines a tilt angle with a horizontal plane, runs down on the guide surface, and then is fed through at least one tubular hole onto a contact area on the surface of the chill roller.', '合金熔体，代表（Fe1-mTm）100-xy-zQxRyMz，其中T是Co和/或Ni，Q是B和/或C，R是至少一种稀土元素，M选自Al ，Si，Ti，V，Cr，Mn，Cu，Zn，Ga，Zr，Nb，Mo，Ag，Hf，Ta，W，Pt，Au和Pb; 10at％≤x≤35at％; 2 at％≤y≤10at％; 0 at％≤z≤10at％;制备0≤m≤0.5。接下来，使熔体与旋转的冷却辊的表面接触并快速冷却和固化。熔体被浇注到引导构件上，引导构件的引导表面与水平面限定倾斜角，在引导表面上向下延伸，然后通过至少一个管状孔进给到冷却器表面上的接触区域上滚筒。', 'US10/607435', 1056643200, 'US7160398B2', 1168272000, 1081353600, NULL, 1168272000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 19, 1, 0, 0, 0, NULL, NULL, NULL, '2002230802 | 2003044511', 'JP | JP', 1028736000, 24, 27, NULL, NULL, 33, 2, 1, 2, 5, NULL, '860', NULL, 'SHEEHAN, JOHN P.', NULL, 'EP0040072A1 | EP0632471A2 | EP1338359A1 | JP1985015049A | JP1990179803A | JP1990247304A | JP1990247305A | JP1990247306A | JP1990247307A | JP1990247308A | JP1990247309A | JP1990247310A | JP1990298003A | JP1991261104A | JP1996229641A | JP1999333549A | JP2000079451A | JP2002100507A | JP2003178908A | JP3297676B1 | RU2111088C1 | US20020036559A1 | US20020117235A1 | US20030136468A1 | US20030183305A1 | US20040050455A1 | US5291939A | US5690752A | US6676773B2 | USH892H1 | WO2000003403A1', 'CN101819844A | US7958929B2', 'G. Ya. Merkulova; \"The Temperature Dependence of Coercivity in Nanocrystalline Nd-Fe-B(TiC) Magnets\"; Journal of Applied Physics; vol. 87; No. 9; May 2000; pp. 4738-4740. cited by other . | Machine English language translation of Japanese Patent Document No. 11-333549 (Dec. 1999). cited by examiner . | Official Communication issued in corresponding European Application No. 05024953.1-2122, dated Mar. 10, 2006. cited by other . | Onodera, et al., \"Magnetic Properties of a New Permanent Magnet Based on a Nd-Fe-B Compound\"; Journal of Magnetism and Magnetic Material, vol. 46, No. 1-2, Dec. 1984, pp. 151-156. cited by other. | U.S. Appl. No. 10/381,412 filed on Mar. 25, 2003, currently pending; for: \"Process for Producing, Through Strip Casting, Raw Alloy for Nanocomposite Type Permanent Magnet\"; Applicants: Ryo Murakami et al. cit- ed by other .', 1, '\\20220510\\2932f92d91fb4cccad6b8e1640b5af1f.png', NULL, NULL, 1, NULL, NULL, 21, NULL, NULL, NULL, 39014, 39016, 39015, 27);
INSERT INTO `os_patent` VALUES (22824, '絶縁性被膜を有する希土類系永久磁石およびその製造方法', '具有绝缘涂层的稀土基永磁体及其制造方法', 'JP4395339B2', '【課題】絶縁性に優れた無機物被膜が表面に形成されてなる希土類系永久磁石およびその簡易な製造方法を提供すること。\n\n【解決手段】本発明の絶縁性希土類系永久磁石は、直接的にまたは耐食性被膜を介して、リンとカルシウムを構成成分として含む無機物被膜が表面に形成されてなることを特徴とする。その好適な製造方法は、耐食性被膜が表面に形成されてなる希土類系永久磁石を、リン酸水素イオンとカルシウムイオンを含む被膜形成処理液に浸漬することで、耐食性被膜の表面にリンとカルシウムを構成成分として含む無機物被膜を形成することを特徴とする。\n\n【選択図】図1', '要解决的问题：提供一种稀土基永磁体，其中在其表面上形成绝缘性优异的无机膜，并提供其简单且容易的制造方法。ŽSOLUTION：绝缘稀土基永磁体具有含磷和钙作为构成元素的无机膜，并且在其表面上直接或通过耐腐蚀膜形成。在其优选的制造方法中，将表面形成有耐腐蚀性膜的稀土类磁铁浸渍在含有磷酸氢根离子和钙离子的成膜处理液中，形成含有磷和钙的无机膜。腐蚀膜表面的构成元素。Ž', 'JP2003205017', 1059580800, 'JP4395339B2', 1262707200, 1109174400, NULL, 1256227200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '田中 純一', NULL, NULL, NULL, NULL, 1, '\\20220510\\125de2b4cbe84d788218567baa4d15d1.png', NULL, NULL, 2, NULL, NULL, 9, NULL, NULL, NULL, 39017, 39019, 39018, 2);
INSERT INTO `os_patent` VALUES (22825, '希土類急冷磁石合金の製造方法および急冷装置', '生产真正的地球淬火磁铁合金的方法和设备', 'JP4506123B2', '【課題】急冷速度が比較的低い急冷装置を用いて、高性能希土類急冷磁合金を安定して生産する。\n\n【解決手段】本発明による希土類急冷磁石合金の製造方法は、希土類合金の溶湯1を急冷する第1急冷工程を行なった後、この第1急冷工程によって温度の低下が始まった合金5を冷却媒体に接触させ、それによって合金5を更に急冷する第2急冷工程を行なう。第2急冷工程では、冷却媒体として機能する冷却用ドラム6を回転させながらドラムの内壁に合金5を接触させる。\n\n【選択図】図3', '要解决的问题：使用相对低淬火速率的淬火设备稳定地生产高性能稀土淬火磁铁合金。ŽSOLUTION：在稀土淬火磁体合金的制造方法中，进行淬火熔融稀土合金1的第一淬火工序，然后通过第一淬火工艺制造温度降低的合金5的第二淬火工序接触冷却因此，进行合金5的淬火。在第二淬火过程中，合金5在旋转的同时与用作冷却介质的冷却鼓6的内壁接触。Ž', 'JP2003289726', 1060272000, 'JP4506123B2', 1279641600, 1110384000, NULL, 1273766400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '田中 純一', NULL, 'JP1983176061A | JP1990138706A | JP1996269643A | JP2001319821A | JP2002175908A | JP2002343660A | WO2002039465A1', NULL, NULL, 1, '\\20220510\\11258f07fab542088e5d66bf9787c783.png', NULL, NULL, 1, NULL, NULL, 13, NULL, NULL, NULL, 39020, 39022, 39021, 2);
INSERT INTO `os_patent` VALUES (22826, 'Magnetic field analyzing method and device therefor', '磁场分析方法及其装置', 'US6967551B2', 'A method and apparatus for magnetic field analysis, contributing to not only determining whether or not demagnetization would occur in a permanent magnet but also calculating its magnetic flux density distribution after the demagnetization, is provided. In a magnetic field analysis method according to the present invention, first, permeance coefficients at multiple sites in a permanent magnet and/or numerical values that are dependent on the permeance coefficients are calculated based on B-H curve data of the permanent magnet at a first temperature T1. Next, modified B-H curve data of the permanent magnet, which has been operated at a second temperature T2 that is different from the first temperature T1, are derived for the respective sites based on B-H curve data of the permanent magnet at the second temperature T2 and the permeance coefficients or the numerical values.', '一种用于磁场分析的方法和装置，不仅有助于确定在永磁体中是否会发生退磁，而且还有助于在退磁之后计算其磁通密度分布。在根据本发明的磁场分析方法中，首先，基于在第一温度下的永磁体的BH曲线数据，计算永磁体中多个位置处的磁导系数和/或取决于磁导系数的数值。 T1。接下来，基于在第二温度T2下的永磁体的BH曲线数据，针对各个位置导出已经在不同于第一温度T1的第二温度T2下操作的永磁体的修正BH曲线数据。渗透系数或数值。', 'US10/501781', 1064851200, 'US6967551B2', 1132588800, 1121270400, NULL, 1132588800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 2, 0, 0, 0, NULL, NULL, NULL, '2002291990', 'JP', 1033660800, 8, 8, NULL, NULL, 5, 9, 5, 5, 1, NULL, '850', NULL, 'BARRERA, RAMON M.', NULL, 'JP1997051700A | JP2002328956A | JP2002328957A | JP2003242199A | US5041172A', 'CN101529265B | DE102015200666A1 | US20050184736A1 | US20080048656A1 | US20100060266A1 | US7222034B2 | US7639013B2 | US8169213B2 | US9864941B2', 'Yasuto Taniguchi et al., \"Magnetic Field Analysis of a Permanet Magnet Motor with a Skewed Rotor Using the Finite Element Method and a 3-D Mesh Coupling Method\", URL: http://www.jri.co.jp/pro-eng/jmag/analysis/paper/skew.pdf.', 1, '\\20220510\\e0dfd619f200490ba3a52608aaaa2caa.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, NULL, 38934, 38936, 38935, 8);
INSERT INTO `os_patent` VALUES (22827, 'R-Fe-B gesinterter Permanentmagnet und Verfahren zu dessen Herstellung', 'R-Fe-B烧结永磁体及其制造方法', 'DE60335331D1', NULL, '烧结永磁体包括稀土元素，包括钇（27-33.5质量％），硼（0.5-2质量％），氮（0.002-0.15质量％），氧（= 0.25质量％），碳（=  0.15质量％），磷（0.001-0.05质量％）和铁（余量）。 磁体的矫顽力> = 1 MA / m。 还包括通过以下方式生产烧结永磁体的独立权利要求：（i）粉碎稀土磁体材料，并直接在矿物油和/或合成油中回收细粉以形成浆料;（ii）在压力下将浆料注入 模腔，其中将浆液在磁场中湿模制；（iii）在减压下加热所得生坯以从生坯中除去矿物油和/或合成油；  （iv）在真空中烧结生坯。 在模具的腔中敞开的用于在压力下注入浆料的孔的轴向偏离模具中的中心芯的中心。 矿物油和/或合成油可以与次磷酸钠（作为流动性改善剂）以甘油或乙醇溶液的形式混合。 细粉的氧含量为0.25-0.6质量％。', 'DE60335331', 1065456000, 'DE60335331D1', 1296057600, 1292342400, NULL, 1296057600, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'D1', NULL, NULL, 35, 6, 0, 0, 0, NULL, NULL, NULL, '2002294431 | 2002362391', 'JP | JP', 1034006400, 9, 17, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 39023, 39025, 39024, 17);
INSERT INTO `os_patent` VALUES (22828, 'Sintered R-Fe-B permanent magnet and its production method', '烧结R-Fe-B永磁体及其制造方法', 'EP1408518B1', 'A sintered permanent magnet having a composition comprising, by mass, 27-33.5% of R, which is at least one of rare earth elements including Y, 0.5-2% of B, 0.002-0.15% of N, 0.25% or less of O, 0.15% or less of C, and 0.001-0.05% of P, the balance being Fe, wherein it is in the shape of a ring having an outer diameter of 10-100 mm, an inner diameter of 8-96 mm, and a height of 10-70 mm, with a plurality of magnetic poles axially extending on an outer circumferential surface. The distribution of a surface magnetic flux density B0 on magnetic poles in an axial direction of the ring magnet is in a range of 92.5% or more of the maximum of B0.', '一种烧结永磁体，其组成包括质量为27-33.5％的R，其为稀土元素中的至少一种，包括Y，0.5-2％的B，0.002-0.15％的N，0.25％或更少的O，0.15％或更少的C和0.001-0.05％的P，余量为Fe，其中它是外径为10-100mm，内径为8-96mm的环形，高度为10-70mm，多个磁极在外圆周表面上轴向延伸。在环形磁铁的轴向上的磁极上的表面磁通密度B0的分布在B0的最大值的92.5％或更大的范围内。', 'EP2003022684', 1065456000, 'EP1408518B1', 1292342400, 1081872000, NULL, 1292342400, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 38, 6, 0, 0, 0, NULL, NULL, NULL, '2002294431 | 2002362391', 'JP | JP', 1034006400, 9, 17, NULL, NULL, 7, 0, 0, 0, 3, NULL, '861', NULL, NULL, NULL, 'DE10032515A1 | DE19945943A1 | JP1999214216A | JP2001181802A | US3366995A', NULL, 'PATENT ABSTRACTS OF JAPAN vol. 1995, no. 06, 31 July 1995 (1995-07-31) & JP 07 057914 A (HITACHI METALS LTD), 3 March 1995 (1995-03-03) | PATENT ABSTRACTS OF JAPAN vol. 1998, no. 02, 30 January 1998 (1998-01-30) & JP 09 275004 A (DAIDO STEEL CO LTD), 21 October 1997 (1997-10-21) | PATENT ABSTRACTS OF JAPAN vol. 1999, no. 13, 30 November 1999 (1999-11-30) & JP 11 214216 A (HITACHI METALS LTD), 6 August 1999 (1999-08-06)', 1, '\\20220510\\67168bf038dc4550aeff9a7e57e71700.png', NULL, NULL, 1, NULL, NULL, 21, NULL, NULL, '有效:DE,FR,GB,NL | 失效:FI,BE,PT,BG,DK,LU,HU,SE,SI,MC,SK,IE,EE,CH,IT,GR,ES,AT,CY,CZ,RO,LI,TR', 39023, 39025, 39024, 17);
INSERT INTO `os_patent` VALUES (22829, '나노컴포지트 자석 및 그 제조방법', '纳米复合磁体及其制造方法', 'KR101045696B1', '본 발명의 바람직한 실시예에 따른 나노컴포지트 자석은 바람직하게는 그 조성식이 (Fe1-mTm)100-x-y-z-w-n(B1-pCp)xRyTizVwMn로 표현되고, 여기서 T는 Co 및 Ni로 구성된 군에서 선택되는 적어도 1종의 원소이며, R은 희토류 원소이며, M은 Al, Si, Cr, Mn, Cu,이며, 조성비율 x, y, z, w, n,자％, 0.01원자％≤w≤6원자％,\n\n부등식을 바람직하게 만족한다.\n\nZn, Ga, Nb, Zr, Mo, Ag, Ta 및 W로 구성된 군에서 선택되는 적어도 1종의 원소m 및 p는 각각, 10원자％<x≤15원자％, 4원자％≤y<7원자％, 0.5원자％≤z≤8원0원자％≤n≤10원자％, 0원자％≤m≤0.5원자％ 및 0.01원자％≤p≤0.5원자％의이 나노컴포지트 자석은 R2Fe14B형 결정 구조의 경질 페라이트상과 연질 페라이트상을 갖는 것이 바람직하다. 나노컴포지트 자석의 보자력과 최대 에너지적 중 적어도 하나는 V를 함유하지 않는 자석의 그것보다 적어도 1％ 이상인 것이 바람직하다.', '选自由M组成的组中的至少一种元素是al，si，cr，mn，cu，zn，ga，nb，zr，mo，ag，ta，WR是稀土材料。选自由此组成的组中的至少一种元素，T为Co和Ni，优选对于纳米复合磁体，组成表达式表示为（Fe（SB）1-m（/ SB）T（SB）m （/ SB））100-xyzw-n（B（SB）1-p（/ SB）C（SB）p（/ SB））×R y Ti z V w M n，根据本发明的优选实施例。并且优选地，摩尔分数x，Y，Z，W，N，M和p满足0.01原子％≤p≤0.5原子％和相应的10原子％003c＃x≤15原子％，4原子％≤y003c的不等式＃7原子％，0.5原子％≤z≤8原子％，0.01原子％≤w≤6原子％，0原子％≤n≤10原子％，0原子％≤m≤0.5原子％。该纳米复合磁体是R 2 Fe 14 B型晶体结构的硬质铁氧体相，并且可以将其称为软铁氧体相。纳米复合磁体的矫顽力和最大能量积中的至少一个V可以被称为磁体的至少1％或更大，其不包含所需的磁体。', 'KR1020047004650', 1065542400, 'KR101045696B1', 1309363200, 1119974400, NULL, 1308844800, '韩国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 15, 2, 0, 0, 0, NULL, NULL, NULL, '2002302769', 'JP', 1034784000, 20, 22, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2002285301A', NULL, NULL, 1, '\\20220510\\034f9440475943d3ba1e3338fa0e47ec.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39026, 39028, 39027, 22);
INSERT INTO `os_patent` VALUES (22830, '永久磁石粉末の配向方法および永久磁石の製造方法', '对准永磁体粉末的方法和制造永磁体的方法', 'JP4370877B2', '【課題】電気·電子機器の小型·軽量化および高機能化に対応した高磁気特性を備えた永久磁石を提供する。\n\n【解決手段】本発明の久磁石粉末の配向方法によれば、まず、配向磁界方向に長さLを有する空間の内部に永久磁石粉末を充填密度1.4〜4.2g/cm3で充填する。その後、上記空間の配向磁界方向における中心以外の位置で磁界強度が最高値を示し、かつ、前記空間の配向磁界方向の両端部のうち磁界強度が最高値を示す位置から遠い方の端部における磁界強度が前記磁界強度の最高値よりも1.0T以上低くなる傾斜磁界を形成する。こうして、前記空間内に充填されている永久磁石粉末に磁力を及ぼし、それによって磁界強度の最高値を示す位置の近傍で永久磁石粉末の充填密度を相対的に上昇させながら磁界配向を行なう。\n\n【選択図】図3', '要解决的问题：提供具有高磁特性的永磁体，对应于紧凑，重量减轻和电气/电子设备的高功能。\n\n根据永久磁铁粉末的本发明的取向方法中，首先，在填充所述永久磁铁粉末的空间内具有长度L密度1.4〜4.2克/厘米 3 。此后，在比在空间的取向磁场方向的中心以外的位置处的磁场强度示出最大值，并在远离示出的空间的取向磁场的方向的两个端部的最高磁场强度的位置的端并且形成梯度磁场，其磁场强度低于磁场强度的最高值1.0T或更多。因此，施加在永久磁铁粉末的力被填充在空间中，从而进行磁场取向而相对增加在指示磁场强度的最大值的位置的附近的永久磁铁粉末的填充密度。\n\n点域', 'JP2003368328', 1067356800, 'JP4370877B2', 1259078400, 1117036800, NULL, 1252598400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 11, 0, 0, 0, 0, NULL, NULL, NULL, '山田 正文', NULL, 'JP1980102204A | JP1984046008A | JP1986247009A | JP1989114010A | JP1996167516A | JP1996330167A | JP1997035932A | JP2000351100A | JP2000353632A | JP2001093712A | JP2002047503A', NULL, NULL, 1, '\\20220510\\370f131d667b4aa4b4b2c1fca7c440cd.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 39029, 39031, 39030, 2);
INSERT INTO `os_patent` VALUES (22831, '耐食性希土類系永久磁石の製造方法および耐食性希土類系永久磁石', '耐腐蚀稀土基永磁体的制造方法和耐腐蚀稀土基永磁体', 'JP4285218B2', '【課題】 亜鉛微粒子分散耐食性被膜を表面に有する希土類系永久磁石の安定かつ簡易な製造方法、こうして製造される耐食性希土類系永久磁石、各種形状の薄型ワークに対する塗膜形成に適したディップスピンコーティング法およびワークの塗膜形成方法を提供すること。\n\n【解決手段】 本発明の耐食性希土類系永久磁石の製造方法は、アルキルシリケートの加水分解重合反応物と平均粒径が1μm〜50μmの亜鉛微粒子を含有したpHが6〜8で粘度が1000cP以下の水系処理液を、希土類系永久磁石の表面に塗布した後、250℃〜400℃にて熱処理を行うことで亜鉛微粒子分散耐食性被膜とすることを特徴とする。\n\n【選択図】図8', '要解决的问题：为了提供一种稳定且易于制造的稀土基永磁体的制造方法，该永磁体表面具有锌颗粒变化耐腐蚀涂层，该方法制造的耐腐蚀稀土基永磁体，适用于将薄膜形成涂覆到各种型材的薄工件上的浸涂旋涂方法，以及该工件的涂膜形成方法。 ŽSOLUTION：在耐腐蚀稀土基永磁体的制造方法中，盆系统处理液的pH值为6-8，粘度最大为1,000cP，含有硅酸烷基酯和平均颗粒的锌颗粒的水解聚合反应物在稀土类永久磁铁的表面上涂布直径为1~50μm的直径。之后，在250-400℃下进行热处理，形成锌颗粒变化耐腐蚀涂层。 Ž', 'JP2003397416', 1069862400, 'JP4285218B2', 1245772800, 1114012800, NULL, 1238688000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 18, 2, 0, 0, 0, NULL, NULL, NULL, '2002348841 | 2003319207', 'JP | JP', 1038499200, 2, 14, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '山田 正文', NULL, 'JP1987013470A | JP1994039327A | JP2000080309A | JP2000182813A | JP2001143949A | JP2002237407A', NULL, NULL, 1, '\\20220510\\e9adc5f895a4457c854bbb57c1389567.png', NULL, NULL, 1, NULL, NULL, 19, NULL, NULL, NULL, 39032, 39034, 39033, 17);
INSERT INTO `os_patent` VALUES (22832, 'Method for producing corrosion-resistant rare earth metal- based permanent magnet, corrosion-resistant rare earth metal- based permanent magnet, dip spin coating method for work piece, and method for forming coating film on work piece', '一种耐腐蚀稀土金属基永磁体的制造方法、耐腐蚀稀土金属基永磁体、工件的浸涂方法和在工件上形成涂膜的方法', 'EP1511046B1', 'The objectives of the present invention are to provide a stable and simple method for producing a rare earth metal-based permanent magnet having on the surface thereof a corrosion-resistant film containing fine zinc particles dispersed therein, a corrosion-resistant rare earth metal-based permanent magnet produced by the method, a dip spin coating method being suitable for forming a coating film on thin type work pieces having various shapes, and a method for forming a coating film on a work piece. A method for producing a corrosion-resistant rare earth metal-based permanent magnet of the present invention, characterized in that it comprises providing an aqueous treating fluid, which contains a hydrolysis polymerization product of alkyl silicate and fine zinc particles having an average particle diameter of 1 µm to 50 µm and has a pH value of 6 to 8 and a viscosity of 1000 cP or less, applying the fluid on the surface of a rare earth metal-based permanent magnet, and subjecting the resultant magnet to a heat treatment at 250°C to 400°C, to thereby form a corrosion-resistant film containing fine zinc particles dispersed therein.', '本发明的目的是提供一种稳定且简单的制备稀土金属基永磁体的方法，该永磁体在其表面上具有分散在其中的含有细锌颗粒的耐腐蚀膜，耐腐蚀的稀土金属基通过该方法制造的永久磁铁，适于在具有各种形状的薄型工件上形成涂膜的浸渍旋涂法，以及在工件上形成涂膜的方法。本发明的耐腐蚀性稀土类金属永久磁铁的制造方法，其特征在于，包括提供含水处理液，该含水处理液含有烷基硅酸盐和平均粒径为0.5的细锌颗粒的水解聚合物。 1μm至50μm，pH值为6至8，粘度为1000cP或更低，在稀土金属基永磁体表面上施加流体，并在250℃下对所得磁体进行热处理。在℃至400℃下，由此形成含有分散在其中的细锌颗粒的耐腐蚀膜。', 'EP2003812349', 1069948800, 'EP1511046B1', 1432051200, 1109692800, NULL, 1432051200, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 26, 2, 0, 0, 0, NULL, NULL, NULL, '2002348841 | 2003319207', 'JP | JP', 1038499200, 10, 14, NULL, NULL, 14, 0, 0, 0, 0, NULL, '854', NULL, NULL, NULL, 'EP1081724A2 | JP1977151635A | JP1984064671A | JP1985064762U | JP1985179180A | JP2000160205A | JP2000164556A | JP2000182813A | JP2000309802A | JP2001143949A | JP2001230108A | JP2001295071A', NULL, NULL, 1, '\\20220510\\3a6284f98c864abe94ad9e930bf496a1.png', NULL, NULL, 1, NULL, NULL, 18, NULL, NULL, '有效:DE | 失效:FI,GB,FR,NL', 39035, 39034, 39033, 17);
INSERT INTO `os_patent` VALUES (22833, '내식성 희토류계 영구자석의 제조방법, 내식성 희토류계영구자석, 워크의 딥 스핀코팅법 및 워크의 도포막', '一种制造耐腐蚀稀土金属永磁体的方法，一种耐腐蚀稀土金属永磁体，一种浸渍旋涂工艺，', 'KR101073326B1', '본 발명의 과제는, 아연미립자분산 내식성 피막을 표면에 가진 희토류계 영구자석의 안정적이고 또한 간이한 제조방법, 이렇게 해서 제조되는 내식성 희토류계 영구자석, 각종 형상의 박형 워크에 대한 도포막 형성에 적합한딥 스핀코팅법 및 워크의 도포막 형성방법을 제공하는 것이다. 본 발명의 내식성 희토류계 영구자석의 제조방법은, 알킬시릴케이트의 가수분해중합반응물과 평균입자지름이 1㎛∼50㎛의 아연미립자를 함유한 pH가 6∼8이고 점도가 1000cP 이하의 수계 처리액을, 희토류계 영구자석의 표면에 도포한 후, 250℃∼400℃에서 열처리를 함으로써 아연미립자분산 내식성 피막으로 하는 것을 특징으로 한다.', '一种制备耐腐蚀稀土基永磁体的方法，其特征在于它包括提供含水处理液，该含水处理液含有烷基硅酸盐和平均粒径为1至50μm的细锌颗粒的水解 - 聚合产物。 pH值为6-8，粘度为1000cP或更低，在稀土基永磁体表面上施加流体，并在250℃-400℃下对所得磁体进行热处理，从而形成含有分散在其中的细锌颗粒的耐腐蚀涂膜;该方法生产的耐腐蚀稀土基永磁体;浸渍旋涂法适用于在具有各种形状的薄工件上形成涂膜;以及在工件上形成涂膜的方法。该方法允许稳定且容易地生产稀土基永磁体，该永磁体在其表面上具有包含分散在膜中的细锌颗粒的耐腐蚀涂膜。', 'KR1020047018573', 1069948800, 'KR101073326B1', 1318348800, 1124985600, NULL, 1317830400, '韩国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 19, 2, 0, 0, 0, NULL, NULL, NULL, '2002348841 | 2003319207', 'JP | JP', 1038499200, 10, 14, NULL, NULL, 3, 1, 1, 1, 0, NULL, NULL, NULL, NULL, NULL, 'JP1987013470A | JP1994039327A | JP2002237407A', 'KR101368617B1', NULL, 1, '\\20220510\\6ea3a35d1cf847a6b2b048839c332ba9.png', NULL, NULL, 1, NULL, NULL, 22, NULL, NULL, NULL, 39035, 39034, 39033, 17);
INSERT INTO `os_patent` VALUES (22834, 'Method for producing corrosion-resistant rare earth metal-based permanent magnet', '生产耐腐蚀稀土金属基永磁体的方法', 'US7335392B2', 'The objectives of the present invention are to provide a stable and simple method for producing a rare earth metal-based permanent magnet having on the surface thereof a corrosion-resistant film containing fine zinc particles dispersed therein, a corrosion-resistant rare earth metal-based permanent magnet produced by the method, a dip spin coating method being suitable for forming a coating film on thin type work pieces having various shapes, and a method for forming a coating film on a work piece. A method for producing a corrosion-resistant rare earth metal-based permanent magnet of the present invention, characterized in that it comprises providing an aqueous treating fluid, which contains a hydrolysis polymerization product of alkyl silicate and fine zinc particles having an average particle diameter of 1 μm to 50 μm and has a pH value of 6 to 8 and a viscosity of 1000 cP or less, applying the fluid on the surface of a rare earth metal-based permanent magnet, and subjecting the resultant magnet to a heat treatment at 250° C. to 400° C., to thereby form a corrosion-resistant film containing fine zinc particles dispersed therein.', '本发明的目的是提供一种稳定且简单的制备稀土金属基永磁体的方法，该永磁体在其表面上具有分散在其中的含有细锌颗粒的耐腐蚀膜，耐腐蚀的稀土金属基通过该方法制造的永久磁铁，适于在具有各种形状的薄型工件上形成涂膜的浸渍旋涂法，以及在工件上形成涂膜的方法。本发明的耐腐蚀性稀土类金属永久磁铁的制造方法，其特征在于，包括提供含水处理液，该含水处理液含有烷基硅酸盐和平均粒径为20的细锌颗粒的水解聚合物。 1μm至50μm，pH值为6至8，粘度为1000cP或更低，在稀土金属基永磁体表面上施加流体，并在250℃下对所得磁体进行热处理。从而形成包含分散在其中的细锌颗粒的耐腐蚀膜。', 'US10/511598', 1069948800, 'US7335392B2', 1203955200, 1129737600, NULL, 1203955200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 20, 2, 0, 0, 0, NULL, NULL, NULL, '2002348841 | 2003319207', 'JP | JP', 1038499200, 10, 14, NULL, NULL, 18, 1, 0, 0, 4, NULL, '862', NULL, 'BASHORE, ALAIN L.', NULL, 'JP1977151635A | JP1984064671A | JP1985179180A | JP1989197385A | JP1991013486A | JP1994061991A | JP1994064762A | JP2000160205A | JP2000309802A | JP2001230108A | JP2001295071A | US2556744A | US3269633A | US3306602A | US3734337A | US4933025A | US4988755A | US6399150B1', 'US20070208117A1', 'International Search Report dated Mar. 2, 2004. | International Search Report dated Mar. 2, 2004. cited by other. | JA 2001-295071 Translation. | JA 2001-295071 Translation. cited by examiner .', 1, '\\20220510\\d1c2c0559d8a4d4bbfa398d04218a70e.png', NULL, NULL, 1, NULL, NULL, 15, NULL, NULL, NULL, 39035, 39034, 39033, 17);
INSERT INTO `os_patent` VALUES (22835, 'VERFAHREN ZUR HERSTELLUNG EINES KORROSIONSBESTÄNDIGEN PERMANENTMAGNETEN AUF SELTENERDBASIS, KORROSIONSBESTÄNDIGER PERMANENTMAGNET AUF SELTENERDBASIS, TAUCHSCHLEUDERBESCHICHTUNGSVERFAHREN FÜR EIN ARBEITSSTÜCK UND VERFAHREN ZUR BILDUNG EINES BESCHICHTUNGSFILMS AUF EINEM ARBEITSSTÜCK', '用于在基于稀土的基于稀土的耐腐蚀永磁体中制造耐腐蚀永磁体的方法,用于工件的浸没螺杆涂覆工艺和在工件上形成涂膜的方法', 'DE60347643T2', 'A method for producing a corrosion-resistant rare earth based permanent magnet, characterized in that it comprises providing an aqueous treating fluid, which contains a hydrolysis-polymerization product of an alkyl silicate and fine zinc particles having an average particle diameter of 1 to 50 μm and has a pH of 6 to 8 and a viscosity of 1000 cP or less, applying the fluid on the surface of a rare earth based permanent magnet, and subjecting the resultant magnet to a heat treatment at 250°C to 400°C, to thereby form a corrosion-resistant coating film containing fine zinc particles dispersed therein; a corrosion-resistant rare earth based permanent magnet produced by the method; a dip spin coating method being suitable for forming a coating film on thin work pieces having various shapes; and a method for forming a coating film on a work piece. The method allows the stable and easy production of a rare earth based permanent magnet having, on the surface thereof, a corrosion-resistant coating film containing fine zinc particles dispersed in the film.', '一种耐腐蚀稀土基永磁体的制造方法，其特征在于，包括提供含水处理液，该含水处理液含有烷基硅酸盐和平均粒径为1~50μm的细锌颗粒的水解聚合产物。 pH值为6-8，粘度为1000cP或更低，在稀土基永磁体表面上施加流体，并在250℃-400℃下对所得磁体进行热处理，从而形成含有分散在其中的细锌颗粒的耐腐蚀涂膜;该方法生产的耐腐蚀稀土基永磁体;浸渍旋涂法适用于在具有各种形状的薄工件上形成涂膜;以及在工件上形成涂膜的方法。该方法允许稳定且容易地生产稀土基永磁体，该永磁体在其表面上具有包含分散在膜中的细锌颗粒的耐腐蚀涂膜。', 'DE60347643', 1069948800, 'DE60347643T2', 1432051200, 1432051200, NULL, 1432051200, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 41, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '855', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 22, NULL, NULL, NULL, 39036, 39034, 39037, 17);
INSERT INTO `os_patent` VALUES (22836, 'Method for producing corrosion resistant rare earth metal-based permanent magnet', '耐腐蚀稀土金属基永磁体的生产方法', 'PH12004501754B1', 'A method for producing a corrosion-resistant rare earth based permanent magnet, characterized in that it comprises providing an aqueous treating fluid, which contains a hydrolysis-polymerization product of an alkyl silicate and fine zinc particles having an average particle diameter of 1 to 50 μm and has a pH of 6 to 8 and a viscosity of 1000 cP or less, applying the fluid on the surface of a rare earth based permanent magnet, and subjecting the resultant magnet to a heat treatment at 250°C to 400°C, to thereby form a corrosion-resistant coating film containing fine zinc particles dispersed therein; a corrosion-resistant rare earth based permanent magnet produced by the method; a dip spin coating method being suitable for forming a coating film on thin work pieces having various shapes; and a method for forming a coating film on a work piece. The method allows the stable and easy production of a rare earth based permanent magnet having, on the surface thereof, a corrosion-resistant coating film containing fine zinc particles dispersed in the film.', '一种耐腐蚀稀土基永磁体的制造方法，其特征在于，包括提供含水处理液，该含水处理液含有烷基硅酸盐和平均粒径为1~50μm的细锌颗粒的水解聚合产物。 pH值为6-8，粘度为1000cP或更低，在稀土基永磁体表面上施加流体，并在250℃-400℃下对所得磁体进行热处理，从而形成含有分散在其中的细锌颗粒的耐腐蚀涂膜;该方法生产的耐腐蚀稀土基永磁体;浸渍旋涂法适用于在具有各种形状的薄工件上形成涂膜;以及在工件上形成涂膜的方法。该方法允许稳定且容易地生产稀土基永磁体，该永磁体在其表面上具有包含分散在膜中的细锌颗粒的耐腐蚀涂膜。', 'PH12004501754', 1069948800, 'PH12004501754B1', 1244131200, 1069948800, NULL, 1244131200, '菲律宾', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 41, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, '856', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 22, NULL, NULL, NULL, 39038, 39034, 39039, 17);
INSERT INTO `os_patent` VALUES (22837, 'Oxidation-resistant rare earth containing magnet powder and method for production thereof, compound for rare earth containing bonded magnet, rare earth containing bonded magnet and method for production thereof', '抗氧化含稀土磁粉及其制备方法、含稀土粘结磁体用化合物、含稀土粘结磁体及其制备方法', 'EP1583111B1', 'The objectives of the present invention are to provide an oxidation-resistant rare earth metal-based magnet powder useful for producing rare earth metal-based bonded magnet which is not only excellent in oxidation resistance but also superior in magnetic characteristics and a method for producing the same, a compound for rare earth metal-based bonded magnet, a rare earth metal-based bonded magnet and a method for producing the same. The oxidation-resistant rare earth metal-based magnet powder of the present invention is characterized in that it has on its surface an adhesion layer containing a pigment as a primary component.', '本发明的目的是提供一种用于制造稀土金属基粘结磁体的抗氧化稀土金属基磁体粉末，其不仅具有优异的抗氧化性而且具有优异的磁特性，并且提供了一种制备该磁体的方法。同样，用于稀土金属基粘结磁体的化合物，稀土金属基粘结磁体及其制备方法。本发明的抗氧化稀土金属基磁体粉末的特征在于，在其表面上具有含有颜料作为主要组分的粘合层。', 'EP2004701105', 1073577600, 'EP1583111B1', 1363104000, 1128441600, NULL, 1363104000, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 27, 2, 0, 0, 0, NULL, NULL, NULL, '2003004694 | 2003054561 | 2003127078 | 2003166056', 'JP | JP | JP | JP', 1042128000, 5, 13, NULL, NULL, 15, 0, 0, 0, 6, NULL, '854', NULL, NULL, NULL, 'EP1102246A1 | EP1231599A1 | JP1976029119A | JP1985082575A | JP1988076305A | JP1989011304A | JP1998135021A | JP2000231348A | JP2001011504A | JP2001068314A | JP2002356614A | JP2003092208A | JP2003217916A | JP2003303711A', NULL, 'Applications of Rare-Earth Magnets to the Small motor industry,F. YAMASHITA,Proceedings of the seventeenth international workshop, Rare Earth Magnets and Their Applications,Rinton Press,20020818,100 | F. YAMASHITA,Applications of Rare-Earth Magnets to the Small motor industry,Rinton Press,20020818 | PATENT ABSTRACTS OF JAPAN vol. 012, no. 106 (E-596), 6 April 1988 (1988-04-06) -& JP 62 234302 A (KANEGAFUCHI CHEM IND CO LTD), 14 October 1987 (1987-10-14) | PATENT ABSTRACTS OF JAPAN vol. 012, no. 308 (E-647), 22 August 1988 (1988-08-22) -& JP 63 076305 A (TAIYO YUDEN CO LTD), 6 April 1988 (1988-04-06) | PATENT ABSTRACTS OF JAPAN vol. 012, no. 310 (E-648), 23 August 1988 (1988-08-23) -& JP 63 077104 A (SUMITOMO SPECIAL METALS CO LTD), 7 April 1988 (1988-04-07) | PATENT ABSTRACTS OF JAPAN vol. 2000, no. 20, 10 July 2001 (2001-07-10) -& JP 2001 068314 A (SONY CORP), 16 March 2001 (2001-03-16)', 1, '\\20220510\\869bb5488dad415298c9957680b35c06.png', NULL, NULL, 1, NULL, NULL, 19, NULL, NULL, '有效:DE | 失效:IT,GB,FR,NL', 39040, 39042, 39041, 14);
INSERT INTO `os_patent` VALUES (22838, '耐酸化性希土類系磁石粉末およびその製造方法', '抗氧化稀土磁体粉末及其制造方法', 'JP4433800B2', '【課題】  耐酸化性に優れるとともに高い磁気特性を示す希土類系ボンド磁石を製造するために有用な、耐酸化性希土類系磁石粉末およびその製造方法を提供すること。\n\n【解決手段】  本発明の耐酸化性希土類系磁石粉末は、顔料を主たる構成成分とする被着層を表面に有してなることを特徴とするものであり、その製造方法は、希土類系磁石粉末と顔料含有処理液を混合した後、顔料含有処理液が表面に付着した希土類系磁石粉末を乾燥することを特徴とするものである。\n\n【選択図】  図1', '要解决的问题：提供抗氧化稀土基磁铁粉末，用于生产具有优异的抗氧化性和高磁特性的稀土基粘结磁铁，并提供其生产方法。 ŽSOLUTION：抗氧化稀土基磁体粉末在其表面上具有主要包含颜料的涂层，其制备方法包括混合稀土基磁体粉末和含有颜料的处理液的步骤，以及干燥步骤含有附着在稀土类磁铁粉末表面的颜料的处理液。 Ž', 'JP2004003883', 1073577600, 'JP4433800B2', 1268755200, 1103126400, NULL, 1262880000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, '2003004694 | 2003127078', 'JP | JP', 1042128000, 2, 13, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '酒井 朋広', NULL, NULL, NULL, NULL, 1, '\\20220510\\6922f1cbde104f4b8cacc1fc0f1f158e.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 39043, 39042, 39041, 14);
INSERT INTO `os_patent` VALUES (22839, '耐酸化性希土類系磁石粉末およびその製造方法', '抗氧化稀土磁体粉末及其制造方法', 'JP4433801B2', '【課題】 耐酸化性に優れるとともに高い磁気特性を示す希土類系ボンド磁石を製造するために有用な、耐酸化性希土類系磁石粉末およびその製造方法を提供すること。\n\n【解決手段】 本発明の耐酸化性希土類系磁石粉末は、希土類系磁石粉末の表面に形成された1層以上の被膜を介して最表面に顔料を主たる構成成分とする被着層を有してなることを特徴とするものであり、その製造方法は、表面に1層以上の被膜を形成した希土類系磁石粉末と顔料含有処理液を混合した後、顔料含有処理液が最表面に付着した希土類系磁石粉末を乾燥することを特徴とするものである。\n\n【選択図】図1', '要解决的问题：提供一种抗氧化稀土磁体粉末，其可用于制备具有优异抗氧化性和高磁特性的稀土粘结磁体，并提供一种磁体粉末的制造方法。ŽSOLUTION：该抗氧化稀土磁体粉末具有沉积层，该沉积层主要由稀土磁体粉末表面上的至少一个涂层的最外表面上的颜料组成。为了制造抗氧化稀土磁体粉末，将在其表面上具有至少一个涂层的稀土磁体粉末和含颜料的处理液混合，使得含颜料的处理液附着在其最外表面上。稀土磁铁粉末，然后将稀土磁铁粉末干燥。Ž', 'JP2004003884', 1073577600, 'JP4433801B2', 1268755200, 1106755200, NULL, 1262880000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 2, 0, 0, 0, NULL, NULL, NULL, '2003166056', 'JP', 1055260800, 2, 13, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '酒井 朋広', NULL, NULL, NULL, NULL, 1, '\\20220510\\a37f9390f02f41a5a38649f5e484b3dc.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, NULL, 39044, 39042, 39041, 14);
INSERT INTO `os_patent` VALUES (22840, 'OXIDATIONSBESTÄNDIGES SELTENE ERDEN ENTHALTENDES MAGNETPULVER UND VERFAHREN ZU SEINER HERSTELLUNG, ZUSAMMENSETZUNG FÜR EINEN GEBONDETEN SELTENE ERDEN ENTHALTENDEN MAGNETEN, SELTENE ERDEN ENTHALTENDER GEBONDETER MAGNET UND VERFAHREN ZU SEINER HERSTELLUNG', '耐氧化稀土含有磁粉及其制备方法,用于填充含有磁体的粘结稀土,含有含有含有含有地球的粘合磁体的组合物及其制备方法', 'DE602004041324T2', 'An oxidation-resistant rare earth based magnet powder, characterized in that it has a layer containing a pigment as a primary component adhered onto its surface; a method for producing the magnet powder; a compound for a rare earth based bonded magnet; and a rare earth based bonded magnet and a method for the production thereof. The magnet powder is useful for producing a rare earth based bonded magnet which is excellent in the resistance to oxidation and also exhibits high magnetic characteristics.', '1.一种抗氧化稀土类磁铁粉末，其特征在于，在其表面附着有含有颜料作为主要成分的层。一种磁铁粉末的制造方法;用于稀土基粘结磁体的化合物;稀土类粘结磁铁及其制造方法。该磁铁粉末可用于制造稀土基粘结磁铁，该磁铁具有优异的抗氧化性和高磁特性。', 'DE602004041324', 1073577600, 'DE602004041324T2', 1363104000, 1363104000, NULL, 1363104000, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 38, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '855', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 20, NULL, NULL, NULL, 39045, 39042, 39046, 14);
INSERT INTO `os_patent` VALUES (22841, 'プレス成形装置およびプレス成形方法', '压制成型装置和压制成型方法', 'JP4686978B2', '【課題】 様々な形状の成形体を成形性よく形成することができる、プレス成形装置およびプレス成形方法を提供する。\n\n【解決手段】 プレス成形装置10は、異形状の成形体Sを得るために用いられ、ダイホール14aを有するダイ14、ダイホール14a内に嵌入される下パンチ20、キャビティ26に充填比が位置に拘わらず略均一になるように粉末mを充填するための給粉装置18、およびキャビティ26に充填された粉末mを下パンチ20とともにプレスするための上パンチ22を備える。下パンチ20のパンチ面20aが凸状に形成され、上パンチ22のパンチ面22aが凹状に形成され、給粉装置18が粉末mをキャビティ26に上面凸状に供給する。\n\n【選択図】図2', '要解决的问题：提供一种压制成型设备和方法，其可以形成具有各种形状和高成形性的压块。 ŽSOLUTION：压模设备10用于获得各种形状的压块S，并配备有具有模孔14a的模具14，装配在模孔14a中的下冲头20，用于填充模腔的粉末供给装置18如图26所示，粉末m使得填充系数几乎均匀地位于任何位置，并且上冲头22用于与下冲头20一起压入供给到腔26中的粉末。下冲头20的冲压面20a形成为凸形形状和上冲头22的冲压面22a形成为凹形。通过粉末供给装置18将粉末m供应到腔26中，使得粉末m的顶面是凸起的。 Ž', 'JP2004017447', 1075046400, 'JP4686978B2', 1306252800, 1123084800, NULL, 1298563200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '村山 睦', NULL, NULL, NULL, NULL, 1, '\\20220510\\e4c2274900c044bc80a61848be6a3957.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39047, 39049, 39048, 2);
INSERT INTO `os_patent` VALUES (22842, '磁石粉末用のプレス成形装置および磁石の製造方法', '用于磁铁粉末的压制成形装置和制造磁铁的方法', 'JP4258387B2', '【課題】パルス磁界を用いて従来よりも効率良く磁石用粉末成形体を製造する方法およびそのような製造方法に好適に用いられるプレス成形装置を提供することにある。\n\n【解決手段】本発明のプレス成形装置は、キャビティを形成するための貫通穴を有するダイス20と、貫通穴に下方から挿入される下パンチ10Bと、貫通穴に上方から挿入され、キャビティに充填された磁石粉末を下パンチ10Bと共に加圧して成形する上パンチ10Aと、キャビティに充填された磁石粉末に対して1.5T以上10T以下のパルス磁界パルス磁界を印加する磁界発生装置40とを備えたプレス成形装置である。ダイス20は、主成分がジルコニアであり、5質量%以上50質量%以下の濃度で金属炭化物を含有する導電性セラミックス材料から形成されている。\n\n【選択図】図1', '要解决的问题：提供一种通过使用脉冲磁场更有效地制造磁体压块的方法，并提供一种适用于这种制造方法的压制设备。 ŽSOLUTION：压实设备包括模具20，模具20具有用于形成空腔的通孔;下冲头10B从下侧插入通孔中;上冲头10A从上侧插入通孔中，与下冲头10B一起压缩填充到空腔中的磁铁粉末;磁场发生器40，其将1.5-10T的脉冲磁场施加到填充到腔体中的磁体粉末，其中，模具20由基于氧化锆的导电陶瓷材料形成并且包含5-50质量％的金属碳化物。 Ž', 'JP2004020660', 1075305600, 'JP4258387B2', 1241020800, 1123689600, NULL, 1235059200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '浅井 雅弘', NULL, NULL, NULL, NULL, 1, '\\20220510\\551d771873484c0a8cf02266bddc7720.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39050, 39052, 39051, 2);
INSERT INTO `os_patent` VALUES (22843, '粒子線加速器用永久磁石および磁界発生装置', '用于粒子束加速器和磁场发生器的永磁体', 'JP4697961B2', 'Nd-Fe-B系磁石を用いながら、放射線照射によっても減磁しにくい粒子線加速器用永久磁石と磁界発生装置を提供することができる。吸収線量3,000Gy以上の放射線に被曝される環境で使用される粒子線加速器用永久磁石であって、R(希土類元素のうちの少なくとも1種)、B、TM(遷移元素のうち少なくとも1種で、Feを含有する):残部、および不可避的に含まれる不純物元素を含有し、パーミアンス係数が0.5以上の着磁状態にあり、かつ保磁力HcJが1.6MA/m以上の焼結磁石である。', '在使用ND-FE-B基磁体的同时,可以为粒子射线换热器和磁场发生器提供一种永磁体,其不容易通过辐射照射抵消。它是一种用于粒子射线促进剂的永磁体,用于暴露于吸收剂量3,000 Gy或更多的辐射,R(稀土元素中的至少一个),B,Tm(至少一个过渡元件,Fe-含有):含有剩余部分和不可避免的杂质元素,渗透系数处于0.5或更大的磁化状态,矫顽力HCJ是1.6mA / m或更大的烧结磁体。', 'JP2005502864', 1077206400, 'JP4697961B2', 1307462400, 1149696000, NULL, 1299772800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 6, 0, 0, 0, NULL, NULL, NULL, '2003050541', 'JP', 1046275200, 8, 8, NULL, NULL, 16, 0, 0, 0, 0, NULL, NULL, NULL, '山田 倍司', NULL, 'JP1989072502A | JP1990114499A | JP1990146705A | JP1991177544A | JP1992010503A | JP1992334899A | JP1993258897A | JP1994260316A | JP1994267700A | JP1996255726A | JP1998270197A | JP2001023798A | JP2001143899A | JP2001289982A | JP2002299110A | JP2003007500A', NULL, NULL, 1, '\\20220510\\ec91a41dba924f46b0960dec46a2754f.png', NULL, NULL, 2, NULL, NULL, 8, NULL, NULL, NULL, 39053, 39055, 39054, 9);
INSERT INTO `os_patent` VALUES (22844, 'R-T-B系焼結磁石およびその製造方法', 'R-T-B系烧结磁铁及其制造方法', 'JP4470884B2', 'B濃度を低下させながら保磁力が充分に高いR-T-B系焼結磁石を提供する。本発明のR-T-B系焼結磁石は、R:27.0質量%以上32.0質量%以下(Rは、Nd、Pr、Dy、Tbのうち少なくとも1種であり、NdまたはPrのいずれかが必ず含まれる)、T:63.0質量%以上72.5質量%以下(Tは、Feを必ず含み、Tの50%以下をCoで置換できる)、Ga:0.01質量%以上0.08質量%以下、およびB:0.85質量%以上0.98質量%以下の組成を有する。', '提供具有足够高的矫顽力的R-T-B基烧结磁体,同时降低浓度的浓度。本发明的RTB的烧结磁体是R:27.0质量%以上,32.0质量%或更少(R是Nd,Pr,Dy,Tb中的至少一种,并且始终包括Nd或Pr中的任何一个),T:63.0质量%或更高,72.5质量%(T总含有Fe,50%或更少的T可用CO),Ga:0.01%或更多和0.08重量%或更少,和B:0.85重量%以上,B:0.85重量%或更多,其成分为0.98质量%或更低。', 'JP2005503551', 1078848000, 'JP4470884B2', 1275408000, 1150300800, NULL, 1268323200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 2, 0, 0, 0, NULL, NULL, NULL, '2003065900', 'JP', 1047398400, 9, 9, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '山田 正文', NULL, NULL, NULL, NULL, 1, '\\20220510\\c1c3f43c9b064e18979763621d5e8357.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39056, 39058, 39057, 9);
INSERT INTO `os_patent` VALUES (22845, 'Magnetic-field-generating apparatus and magnetic field orientation apparatus using it', '磁场产生装置和使用它的磁场定向装置', 'US6885267B2', 'An magnetic-field-generating apparatus comprising permanent magnet segments arranged to form a ring-shaped magnetic circuit having a center hole; adjacent permanent magnet segments having such different magnetization directions that their magnetization directions successively change along a circumferential direction of the magnetic circuit; a basic magnetization phase angle θ between the magnetization directions of the adjacent permanent magnet segments being 720/N (°); and a magnetization direction of at least one permanent magnet segment in an essential unit obtained by circumferentially dividing the ring to ¼ being deviated from the basic magnetization phase angle θ by such a deviating angle that a uniform magnetic flux flows in one direction along a diameter of the center hole.', '一种磁场发生装置，包括永久磁铁段，用于形成具有中心孔的环形磁路;相邻的永磁体段具有不同的磁化方向，使得它们的磁化方向沿磁路的圆周方向连续变化;相邻永磁体段的磁化方向之间的基本磁化相位角θ为720 / N（°）;通过将环从周向划分为1/4偏离基本磁化相位角θ而获得的基本单元中的至少一个永磁体段的磁化方向，该偏转角是均匀磁通量沿着一个方向沿着直径的一个方向流动而得到的。中心洞。', 'US10/801576', 1079452800, 'US6885267B2', 1114444800, 1104336000, NULL, 1114444800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 18, 2, 0, 0, 0, NULL, NULL, NULL, '2003071551', 'JP', 1047830400, 2, 4, NULL, NULL, 14, 9, 0, 0, 0, NULL, '859', NULL, 'BARRERA, RAMON M.', NULL, 'JP1999025424A | JP2704352B2 | JP3115243B2 | US5103200A | US5216400A | US5216401A | US5523731A | US5532666A | US5634263A | US5990774A | US6303908B1 | US6396378B1', 'US20040149354A1 | US20110221552A1 | US20120013338A1 | US20120098630A1 | US7214343B2 | US8362863B2 | US8471660B2 | US8860539B2 | WO2021234681A1', NULL, 1, '\\20220510\\d4512342d74442dd927684a2ce7f2772.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 39059, 39061, 39060, 4);
INSERT INTO `os_patent` VALUES (22846, '希土類焼結磁石の製造方法', '稀土烧结磁铁的制造方法', 'JP4581449B2', '(修正有)\n\n【課題】焼結工程時における希土類焼結磁石の炭化を防止する。\n\n【解決手段】本発明による希土類焼結磁石の製造方法は、希土類磁石粉末の成形体を焼結ケースの内部に挿入する工程(A)と、焼結ケースを焼結炉に挿入する工程(B)と、焼結炉の内部で成形体を焼結する工程(C)とを含む希土類焼結磁石の製造方法であって、工程(C)において、炭素と結合する金属の箔40が少なくとも1つ前記焼結ケースの内部に配置されている。好ましくは金属の箔がTiを主成分として含有する。\n\n【選択図】図1', '要解决的问题：在烧结步骤中防止稀土烧结磁体碳化。 ŽSOLUTION：这种制造稀土烧结磁体的方法包括步骤（A），其中将由稀土磁体粉末制成的压块插入烧结壳体中，步骤（B）中将烧结壳体插入烧结炉中步骤（C），其中压块在烧结炉中烧结。在步骤（C）中，在烧结壳中布置至少一个与碳耦合的金属箔40。金属箔优选含有Ti作为主要成分。 Ž', 'JP2004085523', 1079971200, 'JP4581449B2', 1289923200, 1128528000, NULL, 1284048000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '久保田 昌晴', NULL, NULL, NULL, NULL, 1, '\\20220510\\402a96fee6e64e9f965d7a1d64529f86.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39062, 39064, 39063, 2);
INSERT INTO `os_patent` VALUES (22847, 'Method of manufacturing a sintered body', '制造烧结体的方法', 'US7135141B2', 'A method of manufacturing a sintered body, in which a material powder composed of metallic powder or alloy powder, a getter material having a higher oxidation potential than that of the material powder, and a hydride, which constitutes a hydrogen source, are sealed under reduced pressure in a metallic container, and subjected to pressurized sintering while being heated. The pressurized sintering is performed by keeping the metallic container at pressure not higher than 50 MPa and at temperature not lower than 500° C. for 1 to 50 hours, and then sintering the metallic powder and the alloy powder at pressure higher than 50 MPa and at temperature not higher than 1340° C.', '一种制造烧结体的方法，其中由金属粉末或合金粉末组成的材料粉末，具有比材料粉末高的氧化电位的吸气材料，和构成氢源的氢化物，在减少的情况下密封在金属容器中加压，并在加热的同时进行加压烧结。通过将金属容器保持在不高于50MPa的压力和不低于500℃的温度下保持1至50小时，然后在高于50MPa的压力下烧结金属粉末和合金粉末来进行加压烧结。温度不高于1340°C', 'US10/810673', 1080489600, 'US7135141B2', 1163433600, 1096473600, NULL, 1163433600, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 4, 0, 0, 0, NULL, NULL, NULL, '2003093645 | 2003311148', 'JP | JP', 1049040000, 2, 5, NULL, NULL, 17, 6, 1, 3, 0, NULL, '859', NULL, 'JENKINS, DANIEL', NULL, 'JP2000144396A | US20020028175A1 | US20020041819A1 | US20030133824A1 | US20030211001A1 | US20040118247A1 | US20050084445A1 | US5011742A | US5051218A | US5147086A | US6171363B1 | US6261337B1 | US6461989B1 | US6521173B2 | US6582651B1 | US6607693B1 | US6783696B2', 'US10583486B2 | US20130118312A1 | US8047288B2 | US8178477B2 | US8815408B1 | US9101984B2', NULL, 1, '\\20220510\\c091f25437f14e4c86ca4ce5fcfdda67.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 39065, 39067, 39066, 5);
INSERT INTO `os_patent` VALUES (22848, '希土類合金粉末の製造方法および希土類焼結磁石の製造方法', '稀土合金粉末的制造方法和稀土类烧结磁铁的制造方法', 'JP4449900B2', '本発明は、R2T14A(RはYを含む希土類元素、TはFe又はFeとFe以外の遷移金属元素の少なくとも1種との混合物、Aはボロン又はボロンと炭素との混合物)で表される組成の主相を有する希土類焼結磁石の製造に用いられる希土類合金粉末の製造方法である。\n\n溶湯からの急冷法により平均デンドライト幅が特定の範囲内にある柱状組織を有する第1希土類急冷合金を用意し、平均デンドライト幅が第1希土類急冷合金よりも小さい柱状組織を有する第2希土類急冷合金を用意し、それぞれの合金を粉砕して混合することにより、粉末混合物を作成する。\n\nデンドライト幅の異なる希土類合金を粉砕すると、デンドライト幅に対応した粒度の異なる粉末が得られ、粒度分布が広い粉末となるので、粉末の充填性が改善される。', '根据本发明,R2T14A(R是含有Y的稀土元素,T是除Fe或Fe和Fe之外的过渡金属元素中的至少一种的混合物,A是由硼或硼和碳表示的组合物。它是一种制造稀土合金粉末的方法,用于制造具有主阶段的稀土烧结磁体。\n\n具有柱状组织的第二稀土淬火合金,该柱状组织具有柱状组织,该组织通过从熔融金属中淬灭,平均颗粒状光宽度在特定范围内,并且平均枝条宽度是具有小于柱结构的第二稀土淬火合金第一稀土淬火合金。通过制备和混合每个合金制备粉末混合物。\n\n当基于具有不同树突宽度的稀土合金时,获得具有对应于树突宽度的不同颗粒尺寸的粉末,粒度分布是宽的粉末,从而提高了粉末的填充。', 'JP2005505771', 1082476800, 'JP4449900B2', 1271174400, 1152720000, NULL, 1265299200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 2, 0, 0, 0, NULL, NULL, NULL, '2003117134', 'JP', 1050940800, 10, 10, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '米田 健志', NULL, NULL, NULL, NULL, 1, '\\20220510\\669491b86c5843a5a53707ae5fc5413b.png', NULL, NULL, 1, NULL, NULL, 13, NULL, NULL, NULL, 39068, 39070, 39069, 11);
INSERT INTO `os_patent` VALUES (22849, 'Method for producing rare earth based alloy powder and method for producing rare earth based sintered magnet', '稀土类合金粉末的制造方法和稀土类烧结磁铁的制造方法', 'US7390369B2', 'An inventive method of making a rare-earth alloy powder is used to produce a rare-earth sintered magnet, whose main phase has a composition R2T14A (where R is one of the rare-earth elements including Y; T is Fe with or without a non-Fe transition metal; and A is boron with or without carbon). The method includes the steps of: preparing a first rare-earth rapidly solidified alloy, having a columnar texture with an average dendritic width within a first range, by subjecting a melt of a first rare-earth alloy with a first composition to a rapid cooling process; preparing a second rare-earth rapidly solidified alloy, having a columnar texture with an average dendritic width smaller than that of the first rare-earth rapidly solidified alloy and falling within a second range, by subjecting a melt of a second rare-earth alloy with a second composition to the rapid cooling process; making a first rare-earth alloy powder by pulverizing the first solidified alloy; making a second rare-earth alloy powder by pulverizing the second solidified alloy; and making a powder blend including the first and second rare-earth alloy powders.', '制造稀土合金粉末的本发明方法用于生产稀土烧结磁体，其主相具有组成R2T14A（其中R是包括Y的稀土元素之一; T是具有或不具有的稀土元素）非Fe过渡金属;和A是有或没有碳的硼）。该方法包括以下步骤：通过使具有第一组成的第一稀土合金的熔体经受快速冷却，制备具有平均树枝状宽度在第一范围内的柱状纹理的第一稀土快速凝固合金。处理;制备第二稀土快速凝固合金，其具有平均树枝状宽度小于第一稀土快速凝固合金并且落入第二范围内的柱状结构，通过使第二稀土合金的熔体经受快速冷却过程的第二种组合物;通过粉碎第一固化合金制备第一种稀土合金粉末;通过粉碎第二固化合金制备第二种稀土合金粉末;制备包含第一和第二稀土合金粉末的粉末混合物。', 'US10/553968', 1082476800, 'US7390369B2', 1214236800, 1165420800, NULL, 1214236800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 10, 2, 0, 0, 0, NULL, NULL, NULL, '2003117134', 'JP', 1050940800, 10, 10, NULL, NULL, 14, 12, 0, 5, 0, NULL, '849', NULL, 'SHEEHAN, JOHN P.', NULL, 'JP1983182802A | JP1988093841A | JP1988317643A | JP1995197182A | JP1998172850A | JP1998189319A | JP2000219942A | JP2000219943A | US4770723A | US4792368A | US5595608A | US5666635A | US5690752A | US6676773B2', 'US10395823B2 | US11270841B2 | US20140134040A1 | US9044834B2 | US9067284B2 | US9095940B2 | US9144865B2 | US9336932B1 | US9607742B2 | US9613737B2 | US9620268B2 | US9865382B2', NULL, 1, '\\20220510\\0e23823038744a3b9fae7ef806f20da7.png', NULL, NULL, 1, NULL, NULL, 14, NULL, NULL, NULL, 39068, 39070, 39069, 11);
INSERT INTO `os_patent` VALUES (22850, 'Method for producing rare earth based alloy powder and method for producing rare earth based sintered magnet', '稀土基合金粉末的制造方法及稀土基烧结磁体的制造方法', 'EP1632299B1', 'An inventive method of making a rare-earth alloy powder is used to produce a rare-earth sintered magnet, whose main phase has a composition R2T14A (where R is one of the rare-earth elements including Y; T is Fe with or without a non-Fe transition metal; and A is boron with or without carbon). The method includes the steps of: preparing a first rare-earth rapidly solidified alloy, having a columnar texture with an average dendritic width within a first range, by subjecting a melt of a first rare-earth alloy with a first composition to a rapid cooling process; preparing a second rare-earth rapidly solidified alloy, having a columnar texture with an average dendritic width smaller than that of the first rare-earth rapidly solidified alloy and falling within a second range, by subjecting a melt of a second rare-earth alloy with a second composition to the rapid cooling process; making a first rare-earth alloy powder by pulverizing the first solidified alloy; making a second rare-earth alloy powder by pulverizing the second solidified alloy; and making a powder blend including the first and second rare-earth alloy powders.', '制造稀土合金粉末的本发明方法用于生产稀土烧结磁体，其主相具有组成R2T14A（其中R是包括Y的稀土元素之一; T是具有或不具有的稀土元素）非Fe过渡金属;和A是有或没有碳的硼）。该方法包括以下步骤：通过使具有第一组成的第一稀土合金的熔体经受快速冷却，制备具有平均树枝状宽度在第一范围内的柱状纹理的第一稀土快速凝固合金。处理;制备第二稀土快速凝固合金，其具有平均树枝状宽度小于第一稀土快速凝固合金并且落入第二范围内的柱状结构，通过使第二稀土合金的熔体经受快速冷却过程的第二种组合物;通过粉碎第一固化合金制备第一种稀土合金粉末;通过粉碎第二固化合金制备第二种稀土合金粉末;制备包含第一和第二稀土合金粉末的粉末混合物。', 'EP2004728705', 1082476800, 'EP1632299B1', 1559664000, 1141747200, NULL, 1559664000, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 14, 2, 0, 0, 0, NULL, NULL, NULL, '2003117134', 'JP', 1050940800, 10, 10, NULL, NULL, 9, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, 'JP1983182802A | JP1988317643A | JP1995197182A | JP2000219942A | JP2000219943A | US4770723A | US4792368A | US5595608A | US5666635A', NULL, NULL, 1, '\\20220510\\c70c347e81d641349e8509ac0b31ad77.png', NULL, NULL, 1, NULL, NULL, 11, NULL, NULL, '有效:DE | 失效:FI,BE,PT,BG,DK,LU,FR,SE,SI,MC,SK,GB,IE,EE,CH,IT,GR,ES,AT,CZ,PL,RO,LI,TR,NL | 未确认:HU,CY', 39068, 39070, 39069, 11);
INSERT INTO `os_patent` VALUES (22851, 'VERFAHREN ZUR HERSTELLUNG EINES AUF SELTENEN ERDEN BASIERENDEN LEGIERUNGSPULVERS UND VERFAHREN ZUR HERSTELLUNG EINES GESINTERTEN MAGNETEN AUF BASIS SELTENER ERDEN', '制备稀土合金粉末的制造方法及其基于稀土生产烧结磁体的方法', 'DE602004054015T2', 'A method for producing a rare earth based alloy powder for use in producing a rare earth sintered magnet having a primary phase of a composition represented by R2T14A [wherein R represents a rare earth element including Y, T represents Fe or a mixture of Fe with at least one transition metal except Fe, and A represents boron or a mixture of boron and carbon], which comprises providing a first rapidly solidified rare earth alloy having a columnar structure having an average dendrite width in a specific range through a process comprising the rapid solidification from a molten alloy, providing a secondary rapidly solidified rare earth alloy having an average dendrite width smaller than that of the first rapidly solidified rare earth alloy, and pulverizing the respective rare earth alloys and mixing the resultant powders, to produce the objective mixed powder. The pulverization of alloys having different dendrite widths provides powders having different particle sizes dependent on respective dendrite widths and the mixing thereof produces a powder having a broad particle size distribution, which results in the production of a powder exhibiting improved packing characteristics.', '一种稀土类合金粉末的制造方法，该稀土类合金粉末用于制造具有R2T14A所示组成的主相的稀土类烧结磁铁[式中，R表示含有Y的稀土元素，T表示Fe或Fe的混合物。除Fe以外的至少一种过渡金属，A代表硼或硼和碳的混合物，其包括通过包括快速凝固的方法提供具有在特定范围内具有平均枝晶宽度的柱状结构的第一快速凝固的稀土合金。从熔融合金中提供二次快速凝固的稀土合金，其平均枝晶宽度小于第一快速凝固的稀土合金的平均枝晶宽度，并粉碎各稀土合金并混合所得粉末，以制备目标混合粉末。具有不同枝晶宽度的合金的粉碎提供了具有取决于各自的枝晶宽度的不同粒度的粉末，并且其混合产生具有宽粒度分布的粉末，这导致产生具有改善的填充特性的粉末。', 'DE602004054015', 1082476800, 'DE602004054015T2', 1559664000, 1559664000, NULL, 1559664000, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 31, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 13, NULL, NULL, NULL, 39071, 39070, 39072, 11);
INSERT INTO `os_patent` VALUES (22852, 'VERFAHREN UND VORRICHTUNG ZUR HERSTELLUNG VON GRANULIERPULVER EINER SELTENERDENLEGIERUNG UND VERFAHREN ZUR HERSTELLUNG EINES GESINTERTEN OBJEKTS AUS EINER SELTENERDENLEGIERUNG', '用于生产衍生合金的颗粒粉末的方法和装置以及用稀有合金生产烧结物体的方法', 'DE602004022051D1', 'A method for making a granulated powder according to the present invention includes the steps of: preparing a rare-earth alloy powder with remanent magnetization; feeding the powder onto a track 22, which is defined by a side surface 22a and a lower surface 22b that is sloped so as to decrease its height toward the side surface; and setting up vibrations on the track to give the powder kinetic energy, thereby transporting the powder along the length of the track and granulating the powder under a substantially zero magnetic field by utilizing an agglomeration force produced by the remanent magnetization of the powder and a tumbling action produced by the kinetic energy. As a result, a rare-earth alloy granulated powder, which has good flowability and good compactibility and which makes it possible to produce a magnet with excellent magnetic properties, can be obtained.', '根据本发明的制造造粒粉末的方法包括以下步骤：制备具有剩余磁化强度的稀土合金粉末;将粉末送到轨道22上，轨道22由侧表面22a和下表面22b限定，下表面22b倾斜以便朝向侧表面减小其高度;并且在轨道上设置振动以产生粉末动能，从而沿着轨道的长度输送粉末并通过利用由粉末的剩余磁化和翻滚产生的团聚力在基本为零的磁场下将粉末造粒动能产生的动作。结果，可以获得具有良好流动性和良好成型性并且可以制造具有优异磁性的磁体的稀土合金造粒粉末。', 'DE602004022051', 1085500800, 'DE602004022051D1', 1251302400, 1247587200, NULL, 1251302400, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'D1', NULL, NULL, 18, 3, 0, 0, 0, NULL, NULL, NULL, '2003148567 | PCT/JP2004/007586', 'JP | WO', 1053964800, 12, 12, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 39073, 39075, 39074, 12);
INSERT INTO `os_patent` VALUES (22853, '希土類合金の造粒粉の製造方法および製造装置ならびに希土類合金焼結体の製造方法', '生产稀土合金粒状粉末的方法和设备以及稀土合金烧结体的生产方法', 'JP4910393B2', '本発明の造粒粉の製造方法は、残留磁化を有する希土類合金の粉末を用意する工程と、側面22aと側面に向かって低くなるように傾斜した底面22bとによって規定されるトラック22に粉末を供給する工程と、トラックを振動させることによって粉末に運動エネルギーを与え、粉末をトラックの長さ方向に移送しながら、粉末の残留磁化による凝集力と、運動エネルギーによる転動作用とを利用して、実質的にゼロ磁界下で造粒する工程とを包含する。その結果、流動性やプレス成形性に優れ、且つ、優れた磁気特性を有する磁石を製造することが可能な希土類合金の造粒粉が得られる。', '用于制备本发明的颗粒状粉末的方法是轨道22的粉末,其由制备具有残余磁化的稀土合金的粉末的步骤,以及朝向侧表面22a和底表面倾斜的底表面22b 22b朝向侧表面22a倾斜。提供处理和振动轨道的过程,并且粉末被转移,并且在轨道的纵向上转移粉末,由于粉末的残余磁化引起的内聚力使用动能的滚动作用。基本上在零磁场下造粒的过程。结果,稀土合金的造粒粉可具有优异的流动性和压制成形性,并且可以产生具有优异磁性的磁体。', 'JP2005506541', 1085500800, 'JP4910393B2', 1333468800, 1153324800, NULL, 1327593600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 3, 0, 0, 0, NULL, NULL, NULL, '2003148567', 'JP', 1053964800, 12, 12, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '米田 健志', NULL, 'JP1965022649Y1 | JP1989114005A | JP1994262055A | JP1998120148A | JP1999278647A', NULL, NULL, 1, '\\20220510\\5395c19e60b843d3984c7c7cc9015a29.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39073, 39075, 39074, 12);
INSERT INTO `os_patent` VALUES (22854, 'Process and apparatus for producing granulation powder of rare earth alloy and process for producing sintered object of rare earth alloy', '生产稀土合金造粒粉末的方法和设备以及生产稀土合金烧结体的方法', 'EP1642661B1', 'A method for making a granulated powder according to the present invention includes the steps of: preparing a rare-earth alloy powder with remanent magnetization; feeding the powder onto a track 22, which is defined by a side surface 22a and a lower surface 22b that is sloped so as to decrease its height toward the side surface; and setting up vibrations on the track to give the powder kinetic energy, thereby transporting the powder along the length of the track and granulating the powder under a substantially zero magnetic field by utilizing an agglomeration force produced by the remanent magnetization of the powder and a tumbling action produced by the kinetic energy. As a result, a rare-earth alloy granulated powder, which has good flowability and good compactibility and which makes it possible to produce a magnet with excellent magnetic properties, can be obtained.', '根据本发明的制造造粒粉末的方法包括以下步骤：制备具有剩余磁化强度的稀土合金粉末;将粉末送到轨道22上，轨道22由侧表面22a和下表面22b限定，下表面22b倾斜以便朝向侧表面减小其高度;并且在轨道上设置振动以产生粉末动能，从而沿着轨道的长度输送粉末并通过利用由粉末的剩余磁化和翻滚产生的聚集力在基本为零的磁场下将粉末造粒动能产生的动作。结果，可以获得具有良好流动性和良好成型性并且可以制造具有优异磁性的磁体的稀土合金造粒粉末。', 'EP2004734936', 1085500800, 'EP1642661B1', 1247587200, 1144166400, NULL, 1247587200, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 20, 3, 0, 0, 0, NULL, NULL, NULL, '2003148567', 'JP', 1053964800, 12, 12, NULL, NULL, 22, 0, 0, 0, 0, NULL, '857', NULL, NULL, NULL, 'JP1984040560A | JP1987062055B2 | JP1988110521A | JP1988237402A | JP1989114005A | JP1994262055A | JP1998058198A | JP1998140202A | JP2000248301A | JP2000306753A | JP2001114412A | JP2002298621A | JP2003166001A | JP2004131815A | US4770723A | US4792368A | US5116434A | US5383978A | US5666635A | US5733384A | WO2002054418A1', NULL, NULL, 1, '\\20220510\\74b26fc9c55e45e6b0442e9be4059241.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, '有效:DE', 39073, 39075, 39074, 12);
INSERT INTO `os_patent` VALUES (22855, '磁気特性に優れた耐酸化性HDDR磁石粉末の製造方法', '具有优异磁性的抗氧化HDDR磁铁粉末的制造方法', 'JP4375131B2', '(修正有)\n\n【課題】  磁気特性に優れた耐酸化性HDDR(水素吸蔵、脱水素再結晶処理)磁石粉末およびボンド磁石とその製造方法を提供する。\n\n【解決手段】  平均粒子径が50~150μmのHDDR磁石粉末に物理蒸着法により0.005~2μmの膜厚のアルミニウム被膜で表面被覆した後、450℃~600℃で熱処理を行った粉末と、その粉末と熱可塑性樹脂を混練し磁界中で加熱成形し製造されたボンド磁石。\n\n【選択図】  図2', '要解决的问题：提供抗氧化HDDR（氢吸留和脱氢 - 再结晶处理）磁体粉末和磁特性优异的粘结磁体及其制造方法。 ŽSOLUTION：生产粘结磁铁，用平均粒径为50-150μm的HDDR磁铁粉末表面涂覆0.005-2μm膜厚的铝膜，采用物理气相沉积法，该粉末在450℃下进行热处理。 -600℃和热塑性树脂捏合，并在磁场中加热和模塑。 Ž', 'JP2004167752', 1086278400, 'JP4375131B2', 1259683200, 1106150400, NULL, 1253203200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 18, 1, 0, 0, 0, NULL, NULL, NULL, '2003162835', 'JP', 1054828800, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '浅井 雅弘', NULL, NULL, NULL, NULL, 1, '\\20220510\\587edcffc5d54c57af7ef91da49c5edf.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 39076, 39078, 39077, 2);
INSERT INTO `os_patent` VALUES (22856, '物品の表面に形成したニッケルめっき被膜の濡れ性を改善する方法', '一种改善在制品表面上形成的镍镀膜的润湿性的方法', 'JP4539179B2', '【課題】 希土類系永久磁石をはじめとする各種の物品の表面に形成したニッケルめっき被膜の濡れ性を、環境に優しく簡便に改善する方法を提供すること。\n\n【解決手段】 本発明の物品の表面に形成したニッケルめっき被膜の濡れ性を改善する方法は、ニッケルめっき被膜の表面にモリブデン酸塩被膜を形成することを特徴とするものである。\n\n【選択図】 なし', '要解决的问题：提供一种环境友好的方法，并且容易地改善在包括稀土基永磁体在内的各种制品的表面上形成的镍镀膜的润湿性。\n\n提高在本发明制品表面上形成的镍镀膜的润湿性的方法，其特征在于在镍镀膜表面上形成钼酸盐膜。\n\n【选择图】无', 'JP2004167753', 1086278400, 'JP4539179B2', 1283875200, 1134576000, NULL, 1278000000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '伊藤 寿美', NULL, 'JP1992144101A | JP1993198414A | JP1994318512A | JP2002198241A | JP2003535224A', NULL, NULL, 1, '\\20220510\\63aed087da7f4c609e1dc1dabedd0080.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39079, 39081, 39080, 2);
INSERT INTO `os_patent` VALUES (22857, '焼結磁石の製造方法', '制造烧结磁体的方法', 'JP4457770B2', '【課題】焼結前の成形体をワイヤソーで切断する場合において、成形体の割れや欠けの発生を抑えたハンドリングを可能とすることにより、製造歩留まりが向上した焼結磁石の製造方法を提供する。\n\n【解決手段】本発明の焼結磁石の製造方法は、磁石粉末の成形体1を作製する工程(A)と、ワイヤソーを用いて成形体1を複数の板状部分1a〜1dに切断加工し、複数の板状部分1a〜1dが切断面に垂直な方向に配列された状態を形成する工程(B)と、成形体1の板状部分1a〜1dを焼結する工程(C)とを包含する焼結磁石の製造方法であって、工程(B)は、複数の板状部分1a〜1dの少なくとも1つの位置を切断面に平行な方向にずらす工程(b)を含んでいる。\n\n【選択図】図1', '要解决的问题：提供一种制造烧结磁体的方法，其中通过一种方法改进制造产量，其中当用烧结线切割烧结前的压块时，该方法可以抑制压块的裂缝和碎屑的产生锯。 ŽSOLUTION：制造烧结磁体的方法包括生产磁体粉末的压块1的方法（A），方法（B），其中通过使用线锯将压块1切割并加工成多个板1a-1d形成一个状态，其中多个板1a-1d沿垂直于切割平面的方向排列，和一个过程（C），它烧结压块1的板1a-1d。过程（B） ）包含步骤（b），其在平行于切割平面的方向上移动多个板1a-1d的至少一个位置。 Ž', 'JP2004179229', 1087401600, 'JP4457770B2', 1272384000, 1136390400, NULL, 1266508800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 4, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '久保田 昌晴', NULL, NULL, NULL, NULL, 1, '\\20220510\\032e4bd92a3445fc98d710cba278cb24.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39082, 39084, 39083, 2);
INSERT INTO `os_patent` VALUES (22858, '耐食性希土類系永久磁石およびその製造方法', '耐腐蚀稀土基永磁体及其制造方法', 'JP4506306B2', '【課題】 優れた接着信頼性を確保したままAl被膜の孔食の発生を抑制してその耐食性の向上が図られた耐食性希土類系永久磁石およびその製造方法を提供すること。\n\n【解決手段】 本発明の耐食性希土類系永久磁石は、磁石の表面にAl被膜を形成した後、その表面をZnおよび/またはSnによる置換処理をしてから、構成成分として三価クロムと炭素を含み、六価クロムフリーの化成処理被膜を形成してなることを特徴とするものである。その製造方法は、磁石の表面にAl被膜を形成した後、その表面をZnおよび/またはSnによる置換処理をしてから、構成成分として三価クロムと炭素を含み、六価クロムフリーの化成処理被膜を形成することを特徴とするものである。\n\n【選択図】 なし', '要解决的问题：提供一种耐腐蚀的稀土基永磁体，通过抑制Al覆盖中的点蚀和提高耐腐蚀性来确保优异的粘合可靠性，并提供一种制造耐腐蚀稀土的方法基于永久磁铁。 ŽSOLUTION：在耐腐蚀稀土基永磁体中，在磁体表面形成Al覆盖层，表面经Zn和/或Sn取代处理，含三价铬的无铬化学转化涂层覆盖层形成铬和碳作为组分。在该制造方法中，在磁体的表面上形成Al覆盖物，通过Zn和/或Sn对表面进行置换处理，并形成含有三价铬和碳作为组分的无铬化学转化涂层。 Ž', 'JP2004192244', 1088438400, 'JP4506306B2', 1279641600, 1136995200, NULL, 1273766400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '田中 純一', NULL, 'JP1994066173B2 | JP1999283818A | JP2000133541A | JP2000199074A | JP2001335958A | JP2001358003A', NULL, NULL, 1, '\\20220510\\72c8d1169387400fac9441489ca774da.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 39085, 39087, 39086, 2);
INSERT INTO `os_patent` VALUES (22859, '耐食性希土類系永久磁石およびその製造方法', '耐腐蚀稀土基永磁体及其制造方法', 'JP4506305B2', '【課題】 優れた接着信頼性を確保したままAl被膜の孔食の発生を抑制してその耐食性の向上が図られた耐食性希土類系永久磁石およびその製造方法を提供すること。\n\n【解決手段】 本発明の耐食性希土類系永久磁石は、磁石の表面にAl被膜を形成した後、その表面をZnおよび/またはSnによる置換処理をしてから、構成成分としてMg,Ca,Ba,Srから選ばれる少なくとも1種の金属のリン酸塩を含む、水に難溶乃至不溶の無機物被膜を形成してなることを特徴とするものである。その製造方法は、磁石の表面にAl被膜を形成した後、その表面をZnおよび/またはSnによる置換処理をしてから、構成成分としてMg,Ca,Ba,Srから選ばれる少なくとも1種の金属のリン酸塩を含む、水に難溶乃至不溶の無機物被膜を形成することを特徴とするものである。\n\n【選択図】 なし', '要解决的问题：提供一种耐腐蚀的稀土基永磁体，通过抑制Al覆盖中的点蚀和提高耐腐蚀性来确保优异的粘附可靠性，并提供一种制造耐腐蚀稀土的方法基于永久磁铁。 ŽSOLUTION：在耐腐蚀的稀土基永磁体中，在磁体表面形成Al覆盖物，表面经过Zn和/或Sn的替代处理，以及微溶于水的无机覆盖物或当形成组分时，不溶于含有至少一种选自Mg，Ca，Ba，Sr的金属磷酸盐的水。在该制造方法中，在磁体的表面上形成Al覆盖物，通过Zn和/或Sn对表面进行置换处理，以及微溶于水或不溶于含有至少一个水的无机覆盖物。形成选自Mg，Ca，Ba，Sr的金属磷酸盐的类型。 Ž', 'JP2004192243', 1088438400, 'JP4506305B2', 1279641600, 1136995200, NULL, 1273766400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '田中 純一', NULL, 'JP1994066173A | JP1997326308A | JP1999283818A | JP2000133541A | JP2002198241A | JP2003007556A', NULL, NULL, 1, '\\20220510\\d1a446aac5e840f78683b4a5b91572ed.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39088, 39090, 39089, 2);
INSERT INTO `os_patent` VALUES (22860, '磁気異方性希土類焼結磁石の製造方法及び製造装置', '用于制造磁各向异性稀土烧结磁体的方法和装置', 'JP4391897B2', '【課題】 保磁力が低下する原因となる配向の乱れや原料となる微粉末の飛散を生じることなく磁気異方性希土類焼結磁石を製造することができる方法を提供する。\n\n【解決手段】 秤量·充填部41及び高密度化部42において、磁気異方性希土類焼結磁石の原料となる微粉末を所定の密度になるように充填容器に充填し、磁界配向部43においてパルス磁界により微粉末を配向させた後、微粉末をプレスすることなく焼結炉44において焼結する。従来の方法では微粉末をプレスしていたため、磁場により生じた微粒子の配向が、プレス工程及びプレス工程に必要となる消磁工程より乱れていた。本発明の方法ではこのような配向の乱れは生じない。また、微粉末をプレスすることがないことから、微粒子の飛散を防ぐことができる。\n\n【選択図】図4', '要解决的问题：提供一种制造磁各向异性稀土烧结磁体的方法，该磁体不涉及引起矫顽力劣化的取向扰动，并且不散射细粉末以用作材料。 ŽSOLUTION：该方法将可用作磁各向异性稀土烧结磁体材料的细粉末加载到刻度/充电器41和增密器42中达到预定密度的充电容器中，通过脉冲磁力将粉末定向在磁取向设备43中然后，在不压制它们的情况下烧结烧结炉44中的取向粉末。尽管传统方法通过压制过程中的磁场或压制过程所需的退磁过程干扰细颗粒取向，因为它们需要压制细粉末，但这种方法不会引起取向扰动。此外，它可以防止细颗粒散射，因为它不需要按压它们。 Ž', 'JP2004195935', 1088611200, 'JP4391897B2', 1261584000, 1137600000, NULL, 1255622400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 30, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 20, 20, NULL, NULL, 12, 0, 0, 0, 0, NULL, '863', NULL, '田中 純一', NULL, 'JP1980096616A | JP1986044414A | JP1992363010A | JP1994096973A | JP1995153612A | JP2001323301A | JP2002008935A | JP2002088403A | JP2002160096A | JP2002170728A | JP2003166001A', NULL, NULL, 1, '\\20220510\\13fa0671942d4eb6bde923ed040e960a.png', NULL, NULL, 1, NULL, NULL, 27, NULL, NULL, NULL, 39091, 39093, 39092, 23);
INSERT INTO `os_patent` VALUES (22861, 'R-t-b sintered magnet and rare earth alloy', 'R-t-b烧结磁铁和稀土合金', 'US7534311B2', 'A rare-earth sintered magnet according to the present invention, of which the main phase is an R2T14B type compound phase, includes: 27 mass % through 32 mass % of R, which is at least one rare-earth element that is selected from the group consisting of Nd, Pr, Tb, and Dy and that always includes at least one of Nd and Pr; 60 mass % through 73 mass % of T, which is either Fe alone or a mixture of Fe and Co; 0.85 mass % through 0.98 mass % of Q, which is either B alone or a mixture of B and C and which is converted-into B on a number of atoms basis when its mass percentage is calculated; more than 0 mass % through 0.3 mass % of Zr; at most 2.0 mass % of an additive element M, which is at least one element selected from the group consisting of Al, Cu, Ga, In and Sn; and inevitably contained impurities.', '根据本发明的稀土烧结磁体，其主相是R2T14B型化合物相，包括：27质量％至32质量％的R，其为至少一种选自的稀土元素。由Nd，Pr，Tb和Dy组成的组，其总是包括Nd和Pr中的至少一种; 60质量％至73质量％的T，其为单独的Fe或Fe和Co的混合物; 0.85质量％至0.98质量％的Q，其为单独的B或B和C的混合物，并且当计算其质量百分比时，其在多个原子的基础上转化为B;超过0质量％至0.3质量％的Zr;至多2.0质量％的添加元素M，其为选自Al，Cu，Ga，In和Sn中的至少一种元素;并且不可避免地含有杂质。', 'US10/567502', 1092067200, 'US7534311B2', 1242662400, 1158163200, NULL, 1242662400, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 19, 2, 0, 0, 0, NULL, NULL, NULL, '2003292194', 'JP', 1060617600, 11, 11, NULL, NULL, 31, 9, 0, 0, 2, NULL, '850', NULL, 'SHEEHAN, JOHN P.', NULL, 'JP1986295355A | JP1992165012A | JP1994104108A | JP1994220502A | JP1994231926A | JP1997283313A | JP1998097908A | JP1998289813A | JP2000188213A | JP2001297907A | JP2002038245A | JP2002064010A | JP2002075717A | JP2002285276A | US20020007875A1 | US20040118484A1 | US20040166013A1 | US20040177899A1 | US20040187962A1 | US20040187970A1 | US20040189426A1 | US20040216811A1 | US20050268989A1 | US4770723A | US4792368A | US4935075A | US5223047A | US5314548A | US5472525A | US5858123A | US6468365B1', 'US10395823B2 | US11270841B2 | US20100034688A1 | US20100233016A1 | US8128757B2 | US8152936B2 | US9095940B2 | US9144865B2 | US9336932B1', 'International Search Report issued in the corresponding International Application No. PCT/JP2004/011743, mailed on May 18, 2006. cited by other. | International Search Report mailed Oct. 19, 2004 for PCT Application No. PCT/JP2004/011743. cited by other', 1, '\\20220510\\49e9031751aa4494857bc3dc8afd8d75.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39094, 39096, 39095, 12);
INSERT INTO `os_patent` VALUES (22862, 'R-t-b sintered magnet and rare earth alloy', 'R-t-b烧结磁铁及稀土合金', 'EP1662516B1', 'A rare-earth sintered magnet according to the present invention, of which the main phase is an R2T14B type compound phase, includes: 27 mass% through 32 mass% of R, which is at least one rare-earth element that is selected from the group consisting of Nd, Pr, Tb, and Dy and that always includes at least one of Nd and Pr; 60 mass% through 73 mass% of T, which is either Fe alone or a mixture of Fe and Co; 0.85 mass% through 0.98 mass% of Q, which is either B alone or a mixture of B and C and which is converted into B on a number of atoms basis when its mass percentage is calculated; more than 0 mass% through 0.3 mass% of Zr; at most 2.0 mass% of an additive element M, which is at least one element selected from the group consisting of Al, Cu, Ga, In and Sn; and inevitably contained impurities.', '根据本发明的稀土烧结磁体，其主相是R2T14B型化合物相，包括：27质量％至32质量％的R，其为至少一种选自的稀土元素。由Nd，Pr，Tb和Dy组成的组，其总是包括Nd和Pr中的至少一种; 60质量％至73质量％的T，其为单独的Fe或Fe和Co的混合物; 0.85质量％至0.98质量％的Q，其为单独的B或B和C的混合物，并且当计算其质量百分比时，其在多个原子的基础上转化为B;大于0质量％至0.3质量％的Zr;至多2.0质量％的添加元素M，其为选自Al，Cu，Ga，In和Sn中的至少一种元素;并且不可避免地含有杂质。', 'EP2004771704', 1092067200, 'EP1662516B1', 1419955200, 1149004800, NULL, 1419955200, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 23, 2, 0, 0, 0, NULL, NULL, NULL, '2003292194', 'JP', 1060617600, 11, 11, NULL, NULL, 10, 0, 0, 0, 0, NULL, '858', NULL, NULL, NULL, 'EP0411571A2 | EP0576055A1 | JP1986295355A | JP1987020502A | JP1998289813A | JP2000188213A | JP2002075717A | US4770723A | US4792368A | US5405455A', NULL, NULL, 1, '\\20220510\\16ca8ab13b624873b10dff5d6a2d82a3.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, '有效:DE,NL', 39094, 39096, 39095, 12);
INSERT INTO `os_patent` VALUES (22863, 'R-T-B系焼結磁石および希土類合金', 'R-T-B基烧结磁体和稀土合金', 'JP4605013B2', '本発明の希土類焼結磁石は、主相がR2T14B型化合物相を含み、27質量%以上32質量%以下の範囲内のR(Nd、Pr、TbおよびDyからなる群から選択される少なくとも1種の希土類元素であって、NdまたはPrの少なくとも一方を必ず含む)と、60質量%以上73質量%以下の範囲内のT(Fe、または、FeとCoとの混合物)と、0.85質量%以上0.98質量%以下の範囲内のQ(B、または、BとCとの混合物であり、質量%の計算においては原子数基準でBに換算される。)と、0質量%超0.3質量%以下のZrと、2.0質量%以下の添加元素M(Al、Cu、Ga、InおよびSnからなる群から選択される少なくとも1種の元素)と、不可避不純物とを含む。', '本发明的稀土烧结磁铁包括R2T14B型化合物相,以及选自R(Nd,Pr,Tb和Dy)的至少1种,其范围为27质量%或更高,32%质量。稀土元素的稀土元素是Q(B或B和C的混合物,其范围为0.98质量%,并且基于计算质量%的原子数转化为B.)和0质量%超过0.3质量%或更少的添加剂元素M(至少一种选自Al,Cu,Ga,In和Sn和不可避免的杂质。', 'JP2005513043', 1092067200, 'JP4605013B2', 1294156800, 1159977600, NULL, 1287072000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 2, 0, 0, 0, NULL, NULL, NULL, '2003292194', 'JP', 1060617600, 11, 11, NULL, NULL, 9, 0, 0, 0, 0, NULL, NULL, NULL, '山田 倍司', NULL, 'JP1993258928A | JP1993345947A | JP1994220502A | JP1995076708A | JP1998289813A | JP2000188213A | JP2002064010A | JP2002075717A | WO2004081954A1', NULL, NULL, 1, '\\20220510\\2ba38ca41c6147bea7560c3b6e254017.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39094, 39096, 39095, 12);
INSERT INTO `os_patent` VALUES (22864, 'GESINTERTER R-T-B-MAGNET UND SELTENERDLEGIERUNG', '烧结的R-T-B磁铁和稀土合金', 'DE602004046439T2', 'A rare earth sintered magnet which has a main phase containing an R2T14B type compound phase and contains 27 to 32 mass % of R (at least one rare earth element which is selected from the group consisting of Nd, Pr, Tb and Dy and contains at least one of Nd and Pr), 60 to 73 mass % of T (Fe or a mixture of Fe and Co), 0.85 to 0.98 mass % of Q (B or a mixture of B and C, and, in the calculation of mass %, C is converted to B based on the number of atoms), more than 0 and not more than 0.3 mass % of Zr, 2.0 mass % or less of an added element M (at least one element selected from the group consisting of Al, Cu, Ga, In and Sn) and inevitable impurities.', '一种稀土烧结磁体，其主相含有R2T14B型化合物相，含有27至32质量％的R（至少一种稀土元素，选自Nd，Pr，Tb和Dy，并含有Nd和Pr中的至少一种，60至73质量％的T（Fe或Fe和Co的混合物），0.85至0.98质量％的Q（B或B和C的混合物，并且，在质量计算中％，C基于原子数转换为B），大于0且不大于0.3质量％的Zr，2.0质量％或更少的添加元素M（至少一种选自Al的元素） ，Cu，Ga，In和Sn）和不可避免的杂质。', 'DE602004046439', 1092067200, 'DE602004046439T2', 1419955200, 1419955200, NULL, 1419955200, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 44, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 39097, 39096, 39098, 12);
INSERT INTO `os_patent` VALUES (22865, '粉末加圧焼結用缶', '粉末压力烧结即可', 'JP4419137B2', '【課題】 粉末加圧焼結用缶を封止する際に、加圧焼結用缶内に残存するガス成分を極力低減するとともに真空引きによる脱気時に粉末の吸出しを極力低減することで、加圧焼結後の焼結体を加工する際の割れ等の発生を抑制できる焼結体を作製するための粉末加圧焼結用缶を提供する。\n\n【解決手段】 脱気用管が配置されてなる粉末加圧焼結用缶において、該脱気用管の脱気用孔を蓋うように板状の金属網が配置されるとともに、脱気用孔の開孔方向に対して直角方向からの脱気流路が形成されていることを特徴とする粉末加圧焼結用缶。\n\n【選択図】図2', '要解决的问题：提供用于加压烧结粉末的罐，用于制造烧结材料的裂缝等的烧结材料，在加压烧结后的烧结材料的工作时通过还原气体成分保留在罐中用于加压- 尽可能少地烧结，并且当用于加压烧结粉末的罐被密封时，在尽可能少的抽真空时减少在脱气时的粉末抽吸。ŽSOLUTION：在用于加压烧结粉末的罐中，设置用于脱气的管子，设置板状金属网以覆盖用于脱气的管中用于脱气的孔以及从直角方向到脱气的流动通道。形成用于脱气的孔中的开孔方向。Ž', 'JP2004261949', 1094659200, 'JP4419137B2', 1266940800, 1143043200, NULL, 1260460800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 9, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '浅井 雅弘', NULL, NULL, NULL, NULL, 1, '\\20220510\\da785797b10e44bda76d7f35748beef0.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39099, 39101, 39100, 2);
INSERT INTO `os_patent` VALUES (22866, '希土類焼結磁石及びその製造方法', '稀土烧结磁体及其制造方法', 'JP4260087B2', '【課題】モータ用に最適なBr 1.29T以上、Hcj 2.4MA/m以上、(BH)max 320kJ/m3以上の高磁気特性を有する希土類焼結磁石及びその製造方法を提供する。\n\n【解決手段】本発明の希土類焼結磁石は、R(Rは、Tb以外の希土類元素の少なくとも1種とTbとを含む)28.5質量%〜32.0質量%、B0.91質量%〜1.15質量%、酸素0.35質量%以下、残部FeまたはFeとCo及び不可避的不純物からなり、Tbの含有量は3.2質量%〜5.2質量%であり、残留磁束密度Br 1.29T以上、保磁力Hcj 2.4MA/m以上、最大エネルギー積(BH)max 320kJ/m3以上である。\n\n【選択図】 なし', '要解决的问题：提供具有Br 1.29 T或更高，Hcj 2.4 MA / m或更高以及（BH）max 320 kJ / m  3 的高磁特性的稀土烧结磁体。提供。\n\n本发明的稀土类烧结磁铁含有28.5质量％~32.0质量％的R（R含有Tb和Tb以外的至少一种稀土元素），0.91质量％~1.15质量％B，氧为0.35质量％以下，余量为Fe或Fe，Co和不可避免的杂质，Tb的含量为3.2质量％~5.2质量％，残留磁通密度Br为1.29T以上，矫顽力Hcj为2.4MA / m或者更多，最大能量积（BH）最大320kJ / m  3 或更多。\n\n【选择图】无', 'JP2004278840', 1096214400, 'JP4260087B2', 1241020800, 1144252800, NULL, 1235059200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 7, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '右田 勝則', NULL, 'JP1984046008A | JP1993010807A | JP2002285301A | JP2004165482A | JP2004181531A | WO2004081954A1', NULL, NULL, 1, '\\20220510\\34de08d1f2444d3fab1b7f34868c71a2.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39102, 39104, 39103, 3);
INSERT INTO `os_patent` VALUES (22867, 'R-T-B系永久磁石用原料合金およびR-T-B系永久磁石', 'R  -  T  -  B永磁原料合金和R  -  T  -  B基永磁体', 'JP4366360B2', '本発明のR-T-B系永久磁石用原料合金は、R2T14B柱状結晶およびRリッチ相を含む薄板状のR-T-B系永久磁石用原料合金(RはYを含む希土類元素の少なくとも1種、TはFeまたはFeとFe以外の遷移金属元素の少なくとも1種、Bはボロンまたはボロンと炭素)であって、薄板の法線方向を含む任意の断面で観察された合金組織において、アスペクト比が10以上かつその長軸方向が前記薄板の表面に対して90±30°であるRリッチ相の面積率が、合金中に存在する全てのRリッチ相の30%以上である。', '对于本发明，R2T14B柱状晶体和用于容纳富R相的层状RTB系永久磁体的原料合金（R是稀土类元素包括Y的至少一种，T是Fe或者Fe的永久磁铁的RTB原料合金除Fe，B以外的至少一种过渡金属元素是硼或硼在包括薄板法线方向的任意截面中观察到的合金结构中，硼和碳的长径比为10以上，长轴方向相对于薄板表面为90±30°某些富R相的面积比率是合金中存在的所有富R相的30％或更多。', 'JP2005514309', 1096300800, 'JP4366360B2', 1258473600, 1165420800, NULL, 1251388800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 4, 0, 0, 0, NULL, NULL, NULL, '2003339374', 'JP', 1064851200, 4, 4, NULL, NULL, 3, 0, 0, 0, 0, NULL, NULL, NULL, '蛭田 敦', NULL, 'JP1995272929A | JP2003077717A | JP2003213383A', NULL, NULL, 1, '\\20220510\\4799f4b0315c4706805aa395c3f4fe43.png', NULL, NULL, 2, NULL, NULL, 6, NULL, NULL, NULL, 39105, 39107, 39106, 4);
INSERT INTO `os_patent` VALUES (22868, 'ロータ用磁石体', '转子的磁体', 'JP4678576B2', '【課題】 永久磁石の腐食が防止されるとともに、低コストで製造が可能なロータ用磁石体を提供する。\n\n【解決手段】 ロータ用磁石体は、少なくとも内周面又は外周面に複数個の磁極を有するリング状永久磁石と、前記リング状永久磁石の内周面又は外周面に固着されたリング状ヨークと、前記リング状永久磁石又は前記リング状ヨークの少なくとも一方の端面に固着された樹脂製のスペーサとを有し、前記リング状永久磁石及び前記リング状ヨークは樹脂により層状に被覆されていると共に、前記樹脂製のスペーサと前記樹脂層とが接合されている。\n\n【選択図】図1', '要解决的问题：提供一种能够防止永磁体腐蚀的转子磁体，并且可以低成本制造。\n\n解决方案：用于转子的磁体包括环形永磁体和环形磁轭，所述环形永磁体至少在内圆周表面或外圆周表面上具有多个磁极，所述环形磁轭固定到所述环形永磁体的内圆周表面或外圆周表面。环形永磁体或树脂制间隔件，固定在环形轭的至少一个端面上，其中环形永磁体和环形轭分层覆盖有树脂;树脂隔离物和树脂层接合。\n\n[选图]图1', 'JP2004299526', 1097683200, 'JP4678576B2', 1303833600, 1146067200, NULL, 1297267200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '塩治 雅也', NULL, NULL, NULL, NULL, 1, '\\20220510\\9caecc07dcfa4d26a9b6c8fcb7093156.png', NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 39108, 39110, 39109, 3);
INSERT INTO `os_patent` VALUES (22869, '極集中型磁気回路および磁気分離装置', '极集中磁路和磁选机', 'JP4826704B2', '【課題】 永久磁石を用いた磁気回路において、最大限に強い磁場を発生させ、強い磁気勾配を得ることができる磁気回路を提供することを目的とする。\n\n【解決手段】一対の永久磁石をその磁化方向が接合面に対して対称となるように接合して磁極を構成した磁石ユニットを、磁気作用側表面部に交互に異なる極性の磁極が生じるように連ねて極異方性磁石体を形成し、前記永久磁石の磁化方向を該永久磁石の中心部を通る径方向に対して20〜80°の角度とすることを特徴とする極集中型磁気回路。また、それを用いて磁気分離装置としたことを特徴とする。\n\n【選択図】図1', '要解决的问题：提供一种磁路，能够产生最大的强磁场，并使用永久磁铁在磁路中获得强磁场梯度。 ŽSOLUTION：在该磁回路，磁体单元，其中磁极由将一对永磁铁的构成为使得磁化方向变得对称的键合表面上形成时，形成极性各向异性磁铁体通过将磁铁单元，从而以生成关于磁运转侧的表面部与永久磁铁的磁化方向交替不同的极性的磁极被设定为20〜80℃相对于穿过所述永久磁铁的中心部分的径向方向的角度。磁选机采用极端浓度模式磁路。 Ž', 'JP2004300840', 1097769600, 'JP4826704B2', 1322582400, 1118851200, NULL, 1316620800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 4, 0, 0, 0, NULL, NULL, NULL, '2003355405 | 2003372347', 'JP | JP', 1066147200, 2, 2, NULL, NULL, 2, 0, 0, 0, 0, NULL, NULL, NULL, '三崎 仁', NULL, 'JP2002367844A', NULL, NULL, 1, '\\20220510\\ecbe0ccd9734426da91f9ec34a9bc5d6.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39111, 39113, 39112, 2);
INSERT INTO `os_patent` VALUES (22870, '蒸着被膜形成方法', '蒸着被膜形成方法', 'JP4483574B2', '【課題】 サイズの大きい被処理物に対しても、被処理物の欠けや被膜ハガレの発生率を抑えて、その表面に蒸着被膜を効率的に形成することができる、蒸着被膜形成方法を提供すること。\n\n【解決手段】 真空処理室内に、蒸着材料の蒸発部と、その表面に蒸着材料が蒸着される被処理物を収容するための多孔性周面を有する筒型バレルを備え、筒型バレルを横設して水平方向の回転軸線を中心に回転させながら被処理物の表面に蒸着材料を蒸着させる蒸着被膜形成装置を用いた蒸着被膜形成方法であって、(1)被処理物と金属製スプリング部材を、筒型バレル内にそれぞれ多数収容し、被処理物の表面に蒸着材料を蒸着させることを特徴とするか、(2)金属製スプリングをテンションを付加して架設した筒型バレル内に、被処理物を多数収容し、被処理物の表面に蒸着材料を蒸着させることを特徴とするものである。\n\n【選択図】図6', '在尺寸上被处理即使对于大对象，通过抑制崩刃或工件的膜剥离的发生，能够有效地形成表面上的气相沉积膜体，提供一蒸汽沉积膜形成方法要做。\n\n所述的真空处理室，和蒸发材料的蒸发部分，它包括要处理具有用于容纳物体的多孔周面的筒状镜筒沉积材料沉积在表面上，一个管状筒体横向上一组到蒸汽沉积膜形成使用用于同时围绕旋转的水平轴线旋转的工件的表面上沉积沉积材料形成装置气相沉积膜的方法，（1）被处理物和金属弹簧成员，分别容纳在管状筒的数，或其中所述物体的表面上的沉积的沉积材料被处理，（2）在所述管状筒体的金属弹簧，其是通过将张力桥接，容纳大量待处理的物体，并且气相沉积材料沉积在待处理物体的表面上。\n\n点域6', 'JP2004378205', 1104076800, 'JP4483574B2', 1276617600, 1152720000, NULL, 1270137600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 10, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '宮澤 尚之', NULL, NULL, NULL, NULL, 1, '\\20220510\\232a83248b7e4877a76004575fef1552.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39114, 39116, 39115, 2);
INSERT INTO `os_patent` VALUES (22871, '挿入光源', '插入光源', 'JP4251648B2', '周期磁場を形成するための第1磁気回路11と、この第1磁気回路11を支持するための第1支持体21と、第1磁気回路11に対向配置され、周期磁場を形成するための第2磁気回路12と、この第2磁気回路12を支持するための第2支持体22と、対向配置される第1磁気回路11と第2磁気回路12の間に形成され、電子ビームが通過するための空間部13と、第1磁気回路11と第2磁気回路12とを真空封止する真空槽1と、第1磁気回路11と第2磁気回路12を構成する永久磁石mを室温以下に冷却するための冷媒通過管30とを備えている。', '用于形成周期性磁场的第一磁路11，用于支撑第一磁路11的第一支撑件21，以及与第一磁路11相对设置的用于形成周期性磁场的第一磁路11 （2）形成磁路12，用于支撑第二磁路12的第二支撑22，以及彼此相对设置的第一磁路11和第二磁路12，以通过电子束空间部分13，用于真空密封第一磁路11和第二磁路12的真空室1，以及在室温或更低温度下构成第一磁路11和第二磁路12的永磁体m并且制冷剂通道管30用于冷却。', 'JP2005517237', 1105977600, 'JP4251648B2', 1239120000, 1198684800, NULL, 1233244800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 5, 0, 0, 0, NULL, NULL, NULL, '2004015878', 'JP', 1074787200, 10, 10, NULL, NULL, 7, 0, 0, 0, 2, NULL, '864', NULL, '山口 敦司', NULL, 'JP1995159543A | JP2000206296A | JP2001143899A | JP2002075699A | JP2002164239A | JP2002246199A | JP2003197144A', NULL, 'Construction  of  an  in-vacuum  undulator  for  production  of  undulator  x-rays  in  the  5-25  keV  region.S.Yamamoto,T.Shioya,M.Hara,H.Kitamura,X.W.Zhang,T.Mochizuki,H.Sugiyama  and  M.Ando;Rev.Sci.Instr | In-vacuum  undulators  of  SPring-8,T.Hara,T.Tanaka,T.Tanabe,X.M.Marechal,S.Okada  and  H.Kitamura:J.Synchrotron  Radiation  5,403(1998)', 1, '\\20220510\\06363db7447b4ba4913110062b1b8d84.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 39117, 39119, 39118, 11);
INSERT INTO `os_patent` VALUES (22872, 'Undulator', '波动器', 'US7872555B2', 'An undulator comprises a first magnetic circuit (11) for forming a periodic magnetic field, a first support body (21) for supporting the first magnetic circuit (11), a second magnetic circuit (12) arranged opposite to the first magnetic circuit (11), for forming a periodic magnetic field, a second support body (22) for supporting the second magnetic circuit (12), a space (13) formed between the oppositely arranged first magnetic circuit (11) and the second magnetic circuit (12), for passing an electron beam, a vacuum chamber (1) for vacuum-sealing the first magnetic circuit (11) and the second magnetic circuit (12), and a refrigerant passing tube (30) for cooling a permanent magnet (m) constituting the first magnetic circuit (11) and the second magnetic circuit (12) below the room temperature.', '波荡器包括用于形成周期磁场的第一磁路（11），用于支撑第一磁路（11）的第一支撑体（21），与第一磁路（11）相对设置的第二磁路（12） ），用于形成周期性磁场，用于支撑第二磁路（12）的第二支撑体（22），形成在相对设置的第一磁路（11）和第二磁路（12）之间的空间（13）用于通过电子束的真空室（1），用于真空密封第一磁路（11）和第二磁路（12），以及用于冷却永磁体（m）的制冷剂通过管（30）第一磁路（11）和第二磁路（12）低于室温。', 'US10/597352', 1105977600, 'US7872555B2', 1295280000, 1222272000, NULL, 1295280000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 23, 5, 0, 0, 0, NULL, NULL, NULL, '2004015878', 'JP', 1074787200, 10, 10, NULL, NULL, 14, 8, 4, 5, 5, NULL, '865', NULL, 'PHILOGENE, HAISSA', NULL, 'JP1995159543A | JP2000206296A | JP2001143899A | JP2002075699A | JP2002246199A | JP2003197144A | US20030122090A1 | US4523168A | US4912737A | US4977384A | US5410558A | US6573817B2 | US6858998B1', 'US10624200B2 | US20090303579A1 | US20140176270A1 | US20150255201A1 | US8139287B2 | US9275781B2 | US9502166B2 | US9607745B2', 'J. Chavanne, et al., In-Vacuum Undulators at ESRF, Proceedings of the 2003 Particle Accelerator Conference, ESRF, F38043, Grenoble France, 253-255. cited by other . | PM. Stefan, et al., Initial results from an in-vacuum undulator in the NSLS X-ray ring, Journal of Synchrotron Radiation, 1998, 5, 417-419. cited by other . | Shigeru Yamamoto, et al., Construction of an in-vacuum type undulator for production of undulator x rays in the 5-25 keV region, Rev, Sci. Instrum. vol. 63, No. 1, Jan. 1992, pp. 400-403. cited by other. | Supplementary European Search Report issued by European Patent Office on Jan. 14, 2010 for couterpart European Patent Application No. 05703762.4. cited by other . | T. Hara, et al., In-vacuum undulators of SPring-8, Synchrotron Radiation (1998). 5, pp. 403-405. cited by other .', 1, '\\20220510\\7795301d78fd4f56b6cc14f36a3dceb0.png', NULL, NULL, 2, NULL, NULL, 15, NULL, NULL, NULL, 39117, 39119, 39118, 11);
INSERT INTO `os_patent` VALUES (22873, 'Undulator', '波动器', 'EP1715731B1', 'An undulator comprises a first magnetic circuit (11) for forming a periodic magnetic field, a first support body (21) for supporting the first magnetic circuit (11), a second magnetic circuit (12) arranged opposite to the first magnetic circuit (11), for forming a periodic magnetic field, a second support body (22) for supporting the second magnetic circuit (12), a space (13) formed between the oppositely arranged first magnetic circuit (11) and the second magnetic circuit (12), for passing an electron beam, a vacuum chamber (1) for vacuum-sealing the first magnetic circuit (11) and the second magnetic circuit (12), and a refrigerant passing tube (30) for cooling a permanent magnet (m) constituting the first magnetic circuit (11) and the second magnetic circuit (12) below the room temperature.', '波荡器包括用于形成周期磁场的第一磁路（11），用于支撑第一磁路（11）的第一支撑体（21），与第一磁路（11）相对设置的第二磁路（12） ），用于形成周期性磁场，用于支撑第二磁路（12）的第二支撑体（22），形成在相对设置的第一磁路（11）和第二磁路（12）之间的空间（13）用于通过电子束的真空室（1），用于真空密封第一磁路（11）和第二磁路（12），以及用于冷却永磁体（m）的制冷剂通过管（30）第一磁路（11）和第二磁路（12）低于室温。', 'EP2005703762', 1105977600, 'EP1715731B1', 1367337600, 1161705600, NULL, 1367337600, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 24, 5, 0, 0, 0, NULL, NULL, NULL, '2004015878', 'JP', 1074787200, 10, 10, NULL, NULL, 8, 0, 0, 0, 9, NULL, '866', NULL, NULL, NULL, 'JP2000206296A | JP2001143899A | JP2002075699A | JP2002246199A | JP2003197144A | US4977384A | US5410558A', NULL, 'CHAVANNE J ET AL: \"In-vacuum undulators at ESRF\" PROCEEDINGS OF THE 2003 PARTICLE ACCELERATOR CONFERENCE (IEEE CAT. NO.03CH37423) IEEE PISCATAWAY, NJ, USA, vol. 1, 2003, pages 253-255 Vol.1, XP002561710 ISBN: 0-7803-7738-9 | Construction of an in-vacuum type undulator for production of undulator x-rays in the 5-25 keV region | H. SUGIYAMA;T. SHIOYA;M. HARA;T. MOCHIZUKI;M. ANDO;X.W. ZHANG;H. KITAMURA;S. YAMAMOTO,Construction of an in-vacuum type undulator for production of undulator x-rays in the 5-25 keV region,Rev. Sci. Instrum.,vol.63,400 | In-vacuum undulators of SPring-8 | Initial results from an in-vacuum modulator in the NSLS X-ray ring | P.M. STEFAN et al.,Initial results from an in-vacuum modulator in the NSLS X-ray ring,J. Synchrotion Rad.,vol.5,417-419 | STEFAN P M ET AL: \"Initial results from an in-vacuum undulator in the NSLS X-ray ring\" JOURNAL OF SYNCHROTRON RADIATION MUNKSGAARD INTERNATIONAL BOOKSELLERS AND PUBLISHERS FOR INT. UNION CRYSTALLOGR DENMARK, vol. 5, 1 May 1998 (1998-05-01), pages 417-419, XP002561711 ISSN: 0909-0495 | T. HARA;X. M. MARECHAL;T. TANABE;S. OKADA;H. KITAMURA;T. TANAKA,In-vacuum undulators of SPring-8,J. Synchrotron Radiation,vol.5,403 | YAMAMOTO S ET AL: \"Construction of an in-vacuum type undulator for production of undulator x-rays in the 5-25 keV region.\", REV. SCI. INSTR. 63(1), JANUARY 1992, vol. 63, no. 1, January 1992 (1992-01), pages 400-403, ISSN: 0034-6748', 1, '\\20220510\\2e07cee7f39d4112adc6978995339308.png', NULL, NULL, 2, NULL, NULL, 6, NULL, NULL, '有效:DE,GB,FR | 失效:CH,IT,LI', 39117, 39119, 39118, 11);
INSERT INTO `os_patent` VALUES (22874, 'UNDULATOR', '波浪者', 'DE602005039352T2', 'An undulator includes: a first magnetic circuit (11) for forming a cyclic magnetic field; a first support body (21) for supporting the first magnetic circuit (11); a second magnetic circuit (12) arranged to oppose to the first magnetic circuit (11) so as to form a cyclic magnetic field; a second support body (22) for supporting the second magnetic circuit (12); a space (13) formed between the first magnetic circuit (11) and the second magnetic circuit (12) arranged to oppose to each other where an electronic beam passes; a vacuum bath (1) for vacuum-sealing the first magnetic circuit (11) and the second magnetic circuit (12); and a coolant passing tube (30) for cooling permanent magnets m constituting the first magnetic circuit (11) and the second magnetic circuit (12) below the room temperature.', '波荡器包括：第一磁路（11），用于形成循环磁场;第一支撑体（21），用于支撑第一磁路（11）;第二磁路（12），设置成与第一磁路（11）相对，以形成循环磁场;第二支撑体（22），用于支撑第二磁路（12）;在第一磁路（11）和第二磁路（12）之间形成的空间（13），设置成在电子束通过的地方彼此相对;真空浴（1），用于真空密封第一磁路（11）和第二磁路（12）;冷却剂通过管（30），用于冷却构成第一磁路（11）和第二磁路（12）的永久磁铁m，低于室温。', 'DE602005039352', 1105977600, 'DE602005039352T2', 1367337600, 1367337600, NULL, 1367337600, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 34, 5, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '867', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 2, NULL, NULL, 8, NULL, NULL, NULL, 39120, 39119, 39121, 11);
INSERT INTO `os_patent` VALUES (22875, '希土類焼結磁石の製造方法', '稀土烧结磁铁的制造方法', 'JP4483630B2', '(修正有)\n\n【課題】プレス成形を用いて高い配向度の焼結磁石を得ることができる、R-Fe-B系希土類焼結磁石の製法の提供。\n\n【解決手段】 11原子%以上18原子%以下の軽希土類元素から選択される少なくとも1種の希土類元素と、4原子%以上12原子%以下の元素A(ボロンまたはボロンと炭素との混合物)とを含み、残部がFeまたはFeと他の遷移金属との混合物である元素T、微量添加元素Mおよび不可避不純物である組成を有する第1合金微粉末と、10原子%以上35原子%以下の重希土類元素から選択される少なくとも1種の希土類元素と、0原子%以上10原子%以下の元素A(ボロンまたはボロンと炭素との混合物)とを含み、残部がFeまたはFeと他の遷移金属との混合物である元素T、微量添加元素Mおよび不可避不純物である組成を有する第2合金微粉末とを混合し、配向磁界として反転磁界を印加しながら混合粉末を圧縮成形し、焼結する。\n\n【選択図】図1', '（有纠正）\n\n本发明的目的是提供一种制备R-Fe-B基稀土烧结磁体的方法，该方法能够通过压模获得具有高取向度的烧结磁体。\n\n溶液：至少一种选自11原子％至18原子％的轻稀土元素和4原子％至12原子％的元素A（硼或硼和碳的混合物）的稀土元素第一合金细粉，其组成含有Fe，Fe和其它过渡金属的混合物，余量为微量添加元素M，重量为10原子％以上且35原子％以下至少一种稀土元素选自稀土元素，0原子％以上且10原子％以下的元素A（硼或硼和碳的混合物），余量为Fe或Fe和另一种过渡金属通过混合作为元素T的混合元素T，微量添加元素M和具有不可避免的杂质成分的第二合金细粉，在施加反向磁场作为取向磁场的同时对混合粉末进行压模和烧结。\n\n[选图]图1', 'JP2005063795', 1110211200, 'JP4483630B2', 1276617600, 1158768000, NULL, 1270137600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 2, 2, 2, 0, NULL, NULL, NULL, '浅井 雅弘', NULL, NULL, 'US9601979B2 | WO2012043139A1', NULL, 1, '\\20220510\\bcf9b8e53f784315977a7b6ca2ff9eb9.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39122, 39124, 39123, 2);
INSERT INTO `os_patent` VALUES (22876, 'Alやその合金の蒸着被膜を被処理物の表面に形成する方法', '一种在待处理物体表面上形成Al或其合金的蒸发涂膜的方法', 'JP4529763B2', '【課題】 Alやその合金の蒸着被膜を、希土類系永久磁石などの被処理物の表面に、突起物の生成や損傷を効果的に抑制しつつ、優れた生産性でもって形成する方法を提供すること。\n\n【解決手段】 真空処理室内に、蒸着材料の溶融蒸発部と、複数個の被処理物を収容するための収容部材を備えた蒸着装置を用い、複数個の被処理物を収容した収容部材を水平方向の回転軸線を中心に回転させながら、Alまたはその合金の蒸着材料を被処理物の表面に蒸着させるに際し、予め、被処理物を200℃〜350℃に加熱しておいてから蒸着を開始することを特徴とするものである。\n\n【選択図】図1', '要解决的问题：提供一种以优异的生产率形成Al或其合金的蒸发涂膜的方法，同时有效地抑制诸如稀土基永磁体的待处理物体表面上的突起的产生和损坏要做。\n\n解决方案：在真空处理室中使用具有气相沉积材料的熔化和蒸发部分的气相沉积装置和用于容纳多个待处理物体的容纳构件，以及容纳多个待处理物体的存储构件在工件表面上蒸镀Al或其合金的蒸发材料同时在水平方向上围绕旋转轴旋转时，工件预先加热至200℃至350℃，并开始操作。\n\n点域1', 'JP2005099393', 1112112000, 'JP4529763B2', 1282665600, 1160582400, NULL, 1276790400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '宮澤 尚之', NULL, NULL, NULL, NULL, 1, '\\20220510\\cedc0a10ac584dba907341959e4b17e1.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 39125, 39127, 39126, 2);
INSERT INTO `os_patent` VALUES (22877, 'Method for imparting hydrogen resistance to articles', '赋予物品耐氢性的方法', 'US7972491B2', 'A simple and low cost method for imparting excellent hydrogen resistance to various types of articles such as a rare earth metal-based permanent magnet. A method for imparting hydrogen resistance to an article of the present invention is characterized by forming a metal coating film by pulse plating on the surface of the article.', '一种简单且低成本的方法，用于赋予各种类型的制品如稀土金属基永磁体优异的耐氢性。赋予本发明制品耐氢性的方法的特征在于通过脉冲电镀在制品表面上形成金属涂膜。', 'US11/578404', 1113494400, 'US7972491B2', 1309795200, 1212595200, NULL, 1309795200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, '2004119959 | 2004252038', 'JP | JP', 1081958400, 8, 8, NULL, NULL, 20, 0, 0, 0, 3, NULL, '851', NULL, 'SPEER, TIMOTHY M', 'SAVAGE, JASON L', 'JP2000500529A | JP2002212775A | JP2003257721A | JP2612494B2 | US20050067292A1 | US20060283716A1 | US20070125657A1 | US20070269679A1 | US4814009A | US4910072A | US5024858A | US5261154A | US5302464A | US5302469A | US5311660A | US6099711A | US6284652B1 | US7115196B2 | US7230188B1', NULL, '\"Plating Technology\" (Dian Du II Shu), Cheng Du Shi Ke Ji Jiao Liu Zhan Biao Mian Chu Li Yan Jiu Hui, Nov. 30, 1982, pp. I, 1-2, 243-244, 256-257 (with English translation of the descriptions). cited by other . | Chinese Office Action dated Mar. 27, 2009. | Chinese Office Action dated Mar. 27, 2009. cited by other.', 1, '\\20220510\\8176070f5aae44708b0b2c1038443db8.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39128, 39130, 39129, 8);
INSERT INTO `os_patent` VALUES (22878, '物品への耐水素性付与方法', '赋予制品耐氢性的方法', 'JP4760706B2', '【課題】  希土類系永久磁石をはじめとする各種の物品に優れた耐水素性を簡便にかつ低コストで付与する方法を提供すること。\n\n【解決手段】  本発明の物品への耐水素性付与方法は、物品の表面にパルスめっきによって金属被膜を形成することを特徴とするものである。\n\n【選択図】  図1', '本发明提供用于以简单和低成本优异的水特征的多种制品，包括金属基稀土永磁体赋予的方法。\n\n赋予本发明制品耐氢性的方法的特征在于通过在制品表面上进行脉冲电镀形成金属涂膜。\n\n背景技术', 'JP2006512389', 1113494400, 'JP4760706B2', 1314720000, 1204732800, NULL, 1308240000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, '2004119959 | 2004252038', 'JP | JP', 1081958400, 8, 8, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '瀧口 博史', NULL, 'JP1993029119A | JP1995216816A | JP2000500529A | JP2002212775A | JP2003166080A | JP2003257721A | JP2612494B2', NULL, NULL, 1, '\\20220510\\2105f571453a4b209c584a05310f0d71.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39128, 39130, 39129, 8);
INSERT INTO `os_patent` VALUES (22879, 'Verfahren zum Verleihen von Widerstand gegenüber Wasserstoff für Artikel', '赋予制品氢耐受性的方法', 'DE112005000842T5', '[PROBLEMS] To provide a method for imparting excellent resistance to hydrogen to various articles including a rare earth element based permanent magnet, with simplicity and ease, at a low cost. [MEANS FOR SOLVING PROBLEMS] A method for imparting excellent resistance to hydrogen to an article, characterized in that it comprises forming a metal coating film by pulse plating on the surface of the article.', '[问题]提供一种方法，以简单和容易的方式，以低成本赋予包括稀土元素基永磁体在内的各种制品优异的耐氢性。 [解决问题的手段]一种赋予制品优异的耐氢性的方法，其特征在于它包括通过脉冲电镀在制品表面上形成金属涂膜。', 'DE112005000842', 1113494400, 'DE112005000842T5', 1172678400, 1172678400, NULL, NULL, '德国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'T5', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, '2004119959 | 2004252038', 'JP | JP', 1081958400, 8, 8, NULL, NULL, 5, 1, 0, 0, 0, NULL, '855', NULL, NULL, NULL, 'DE19545231A1 | US20020008034A1 | US4792368A', 'DE102016107253A1', NULL, 1, '\\20220510\\714bf85c96004d1caeed57a5fd0160b1.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 39128, 39130, 39129, 8);
INSERT INTO `os_patent` VALUES (22880, 'R-T-B系焼結磁石の製造方法', 'R-T-B基烧结磁体的制备方法', 'JP4618553B2', '【課題】 比較的簡単な工程により、絶縁性が高く、渦電流低減効果に優れた、高磁気特性と高電気抵抗を両立させたR-T-B系焼結磁石の製造方法の提供。\n\n【解決手段】 複数のR-T-B系焼結磁石片(Rは、Nd、Pr、Dy、Tbのうち少なくとも一種であり、NdまたはPrのいずれかが必ず含まれ、Tは、Feを必ず含み、Tの50%以下をCoで置換できる)を準備する工程、前記複数の磁石片の各磁石表面を酸化処理またはフッ化処理する工程、前記酸化処理またはフッ化処理後の複数の磁石片を組み立て、組立体となす工程、前記組立体に一体化熱処理を施す工程、を含むR-T-B系焼結磁石の製造方法。\n\n【選択図】図1', '要解决的问题：提供一种制造R-T-B系烧结磁体的方法，该磁体具有高绝缘性，降低涡流效果并且能够通过相对简单的工艺应对高磁特性和高电阻。 ŽSOLUTION：制造RTB系烧结磁体的方法包括制备多个RTB系烧结磁体片的方法（其中，R是Nd，Pr，Dy和Tb中的至少一种并且肯定含有Nd或Pr，T肯定含有Fe和Co可以代替50％和更少的T）;对多个磁铁片中的每个磁铁的表面进行氧化处理或氟化处理的方法;作为组件，在氧化处理或氟化处理后组装多个磁片的过程;以及将集成热处理应用于组件的过程。 Ž', 'JP2005123024', 1113926400, 'JP4618553B2', 1295971200, 1162396800, NULL, 1288886400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 1, 1, 1, 0, NULL, NULL, NULL, '山田 正文', NULL, NULL, 'CN104380397A', NULL, 1, '\\20220510\\cd53ce5c091243c4aea4d27430c063f5.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39131, 39133, 39132, 2);
INSERT INTO `os_patent` VALUES (22881, 'Methods for producing raw material alloy for rare earth magnet, powder and sintered magnet', '稀土磁铁，粉末和烧结磁铁的原料合金的制造方法', 'US7585378B2', 'A method of making a material alloy for an R-T-Q based rare-earth magnet according to the present invention includes the steps of: preparing a melt of an R-T-Q based rare-earth alloy, where R is rare-earth elements, T is a transition metal element, Q is at least one element selected from the group consisting of B, C, N, Al, Si and P, and the rare-earth elements R include at least one element RL selected from the group consisting of Nd, Pr, Y, La, Ce, Pr, Sm, Eu, Gd, Er, Tm, Yb and Lu and at least one element RH selected from the group consisting of Dy, Tb and Ho; cooling the melt of the alloy to a temperature of 700° C. to 1,000° C. as first cooling process, thereby making a solidified alloy; maintaining the solidified alloy at a temperature within the range of 700° C. to 900° C. for 15 seconds to 600 seconds; and cooling the solidified alloy to a temperature of 400° C. or less as a second cooling process.', '根据本发明的制造用于RTQ的稀土磁体的材料合金的方法包括以下步骤：制备RTQ基稀土合金的熔体，其中R是稀土元素，T是过渡金属元素，Q是选自B，C，N，Al，Si和P中的至少一种元素，并且稀土元素R包括选自Nd，Pr，Y中的至少一种元素RL。 ，La，Ce，Pr，Sm，Eu，Gd，Er，Tm，Yb和Lu以及选自Dy，Tb和Ho的至少一种元素RH;作为第一冷却过程，将合金熔体冷却至700℃至1000℃的温度，从而制成凝固合金;将固化的合金保持在700℃至900℃的温度下15秒至600秒;并且，作为第二冷却过程，将固化的合金冷却至400℃或更低的温度。', 'US10/597853', 1114531200, 'US7585378B2', 1252339200, 1224086400, NULL, 1252339200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 2, 0, 0, 0, NULL, NULL, NULL, '2004135656', 'JP', 1083254400, 10, 10, NULL, NULL, 14, 53, 0, 3, 2, NULL, '850', NULL, 'SHEEHAN, JOHN P.', NULL, 'JP1996269643A | JP2000188213A | JP2002266006A | JP2003188006A | US20020121315A1 | US20040163737A1 | US20050016632A1 | US20050028892A1 | US20060016515A1 | US6403024B1 | US6468365B1 | US6491765B2 | US7258751B2 | WO2002072900A2', 'CN104226941A | CN104226941B | CN104226942A | CN104226942B | CN104226943A | CN104226943B | CN104226944A | CN104226944B | CN104240883A | CN104240883B | CN104240886A | CN104240886B | CN104240887A | CN104240887B | CN104240888A | CN104240888B | CN104249137A | CN104249137B | CN104249156A | CN104249156B | CN104252937A | CN104252937B | CN104252938A | CN104252938B | CN104252939A | CN104252939B | CN104252940A | CN104252940B | CN107262687A | CN107262687B | CN107262688A | CN107262688B | CN108389673A | CN108580819A | CN108580819B | CN108759471A | CN108759471B | CN112626360A | CN204108260U | CN204108261U | CN204108262U | CN204108263U | CN205614027U | CN205718441U | CN214244568U | US10395823B2 | US11270841B2 | US9044834B2 | US9067284B2 | US9095940B2 | US9144865B2 | US9336932B1 | US9672981B2', 'International Search Report issued in the corresponding International Application No. PCT/JP2005/008019, mailed on Aug. 16, 2005. cited by other. | Official Communication issued in the corresponding International Application No. PCT/JP2005/008019, mailed on Nov. 14, 2006. cited by other .', 1, '\\20220510\\ea7f8cd5e5da4dce8ca1fcf9b3ab1c79.png', NULL, NULL, 1, NULL, NULL, 15, NULL, NULL, NULL, 39134, 39136, 39135, 11);
INSERT INTO `os_patent` VALUES (22882, '希土類磁石用原料合金および粉末ならびに焼結磁石の製造方法', '用于稀土磁体的材料合金和粉末以及用于制造烧结磁体的方法', 'JP4692485B2', '本発明によるＲ−Ｔ−Ｑ系希土類磁石用原料合金の製造方法は、まず、Ｒ−Ｔ−Ｑ系希土類合金（Ｒは希土類元素、Ｔは遷移金属元素、ＱはＢ、Ｃ、Ｎ、Ａｌ、Ｓｉ、およびＰからなる群から選択された少なくとも１種の元素）であって、希土類元素Ｒとして、Ｎｄ、Ｐｒ、Ｙ、Ｌａ、Ｃｅ、Ｐｒ、Ｓｍ、Ｅｕ、Ｇｄ、Ｅｒ、Ｔｍ、Ｙｂ、およびＬｕからなる群から選択された少なくとも１種の元素ＲＬと、Ｄｙ、Ｔｂ、およびＨｏからなる群から選択された少なくとも１種の元素ＲＨとを含有する合金の溶湯を用意する。次に、この合金の溶湯を７００℃以上１０００℃以下の温度まで急冷することによって凝固合金を形成する第１冷却工程と、こうして得られた凝固合金を、７００℃以上９００℃以下の温度範囲に含まれる温度で１５秒以上６００秒以下のあいだ保持する温度保持工程と、凝固合金を４００℃以下の温度まで冷却する第２冷却工程とを行う。', '根据本发明的基于RTQ的射线磁体的原料合金的制造方法首先,基于RTQ的稀土合金(R是稀土元素,T是过渡金属元素,Q是B,C,N ,Al,至少一种选自Si,P,P,稀土元素R,作为稀土元素R,Nd,Pr,Y,La,Ce,Pr,Sm,欧盟,Gd,ER,Tm ,Yb含有至少一种选自Lu和Lu的元素R1的合金的熔融金属,以及选自Dy,Tb和Ho的至少一种元素RH。接下来,通过淬火至700℃或更高和1000℃或更低的温度,通过将该合金的熔融金属淬灭该合金的熔融金属的第一冷却步骤,并在温度范围内获得凝结合金700℃以上且900℃或更低。在包含温度的温度为15秒或更长时间和600秒或更小的温度下保持的温度保持步骤,第二冷却步骤冷却至400°C的温度。 或更少。', 'JP2006519516', 1114531200, 'JP4692485B2', 1306857600, 1205337600, NULL, 1299168000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 2, 0, 0, 0, NULL, NULL, NULL, '2004135656', 'JP', 1083254400, 10, 10, NULL, NULL, 11, 1, 1, 1, 0, NULL, NULL, NULL, '長谷川 直也', NULL, 'JP1990251345A | JP1995176413A | JP1996269643A | JP1997170055A | JP2000188213A | JP2002266006A | JP2002275598A | JP2003188006A | JP2003226944A | JP2003507836A | WO2003001541A1', 'JP5936688B2', NULL, 1, '\\20220510\\08d58fc06fb047f58b6d705a2e47e7ab.png', NULL, NULL, 1, NULL, NULL, 13, NULL, NULL, NULL, 39134, 39136, 39135, 11);
INSERT INTO `os_patent` VALUES (22883, 'Methods for producing raw material alloy for rare earth magnet, powder and sintered magnet', '稀土磁体用原料合金、粉末及烧结磁体的制造方法', 'EP1749599B1', 'A method of making a material alloy for an R-T-Q based rare-earth magnet according to the present invention includes the steps of: preparing a melt of an R-T-Q based rare-earth alloy, where R is rare-earth elements, T is a transition metal element, Q is at least one element selected from the group consisting of B, C, N, Al, Si and P, and the rare-earth elements R include at least one element RL selected from the group consisting of Nd, Pr, Y, La, Ce, Pr, Sm, Eu, Gd, Er, Tm, Yb and Lu and at least one element RH selected from the group consisting of Dy, Tb and Ho; cooling the melt of the alloy to a temperature of 700 °C to 1,000 °C as first cooling process, thereby making a solidified alloy; maintaining the solidified alloy at a temperature within the range of 700 °C to 900 °C for 15 seconds to 600 seconds; and cooling the solidified alloy to a temperature of 400 °C or less as a second cooling process.', '根据本发明的制备用于RTQ的稀土磁体的材料合金的方法包括以下步骤：制备RTQ基稀土合金的熔体，其中R是稀土元素，T是过渡金属元素，Q是选自B，C，N，Al，Si和P中的至少一种元素，并且稀土元素R包括选自Nd，Pr，Y中的至少一种元素RL。 ，La，Ce，Pr，Sm，Eu，Gd，Er，Tm，Yb和Lu以及选自Dy，Tb和Ho的至少一种元素RH;作为第一冷却过程，将合金熔体冷却至700℃至1000℃的温度，从而制成凝固合金;将固化的合金保持在700℃至900℃的温度下15秒至600秒;并且，作为第二冷却过程，将凝固的合金冷却至400℃或更低的温度。', 'EP2005736734', 1114531200, 'EP1749599B1', 1441728000, 1170777600, NULL, 1441728000, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 17, 2, 0, 0, 0, NULL, NULL, NULL, '2004135656', 'JP', 1083254400, 10, 10, NULL, NULL, 14, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, 'EP0801402A1 | EP1154444A1 | JP2000188213A | JP2002266006A | JP2003188006A | JP2003507836A | US6403024B1 | US9503738B2 | US9851423B2 | WO2002072900A2 | WO2003100103A1', NULL, NULL, 1, '\\20220510\\590f24caee6c4fd9b93397ef00a99bb8.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, '有效:DE | 失效:FI,BE,PT,BG,DK,LT,LU,FR,HU,SE,SI,MC,SK,GB,IE,EE,CH,IS,IT,GR,ES,AT,CY,CZ,PL,RO,LI,TR,NL', 39134, 39136, 39135, 11);
INSERT INTO `os_patent` VALUES (22884, 'VERFAHREN ZUR HERSTELLUNG EINER ROHMATERIALLEGIERUNG FÜR SELTENERDMAGENTEN, PULVERMAGNETEN UND SINTERMAGNETEN', '用于稀土地块,粉末磁铁和烧结磁铁的原料合金的制造方法', 'DE602005047459T2', 'Disclosed is a method for producing a raw material alloy for R-T-Q rare earth magnets. In this method, there is firstly prepared a melt of an R-T-Q rare earth alloy (with R representing a rare earth element, T representing a transition metal element and Q representing at least one element selected from the group consisting of B, C, N, Al, Si and P) which contains, as the rare earth element (R), at least one element (RL) selected from the group consisting of Nd, Pr, Y, La, Ce, Pr, Sm, Eu, Gd, Er, Tm, Yb and Lu and at least one element (RH) selected from the group consisting of Dy, Tb and Ho. Then, there are performed a first cooling step wherein a solidified alloy is formed by rapidly cooling the alloy melt to a temperature not less than 700˚ C and not more than 1000˚ C, a temperature maintaining step wherein the solidified alloy is kept at a temperature within the range between 700˚ C and 900˚ C for not less than 15 seconds and not more than 600 seconds, and a second cooling step wherein the solidified alloy is cooled to a temperature not more than 400˚ C.', '公开了一种用于生产R-T-Q稀土磁体的原料合金的方法。在该方法中，首先制备RTQ稀土合金的熔体（R代表稀土元素，T代表过渡金属元素，Q代表选自B，C，N的至少一种元素， Al，Si和P），其含有选自Nd，Pr，Y，La，Ce，Pr，Sm，Eu，Gd，Er中的至少一种元素（RL）作为稀土元素（R）。 ，Tm，Yb和Lu以及选自Dy，Tb和Ho的至少一种元素（RH）。然后，进行第一冷却步骤，其中通过将合金熔体快速冷却至不低于700℃且不高于1000℃的温度形成凝固合金，这是保温步骤，其中凝固的合金保持在温度在700℃和900℃之间不小于15秒且不大于600秒，第二个冷却步骤，其中固化合金冷却到不高于400℃的温度。', 'DE602005047459', 1114531200, 'DE602005047459T2', 1441728000, 1441728000, NULL, 1441728000, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 25, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 15, NULL, NULL, NULL, 39137, 39136, 39138, 11);
INSERT INTO `os_patent` VALUES (22885, '粉末成形体の製造方法', '粉末压块的制造方法', 'JP4687267B2', '【課題】配向度が更に高められた粉末成形体の製造方法を提供する。\n\n【解決手段】本発明の製造方法は、磁性粉末6を用意する工程(a)と、磁性粉末6をキャビティ内に充填する工程(b)と、キャビティ内の磁性粉末6を互いに対向する一対の加圧面7a、8aの間でz軸方向に一軸プレスすることによって成形体を形成する工程(c)と、成形体に対して脱磁処理を行う工程(d)とを含む。金型は、強磁性体から形成された第1金型部材と、非磁性体から形成された第2金型部材とを含む。工程(c)は、z軸方向に直交する第1方向に配向磁界9を印加する工程(c1)を含む。配向磁界9は、少なくとも、磁性粉末6の相対密度が約0.4以上に到達したときに印加されており、且つ、キャビティの配向磁界9に交差する面は、第1金型部材の面11、12である。\n\n【選択図】図2', '要解决的问题：提供粉末压块的制造方法，其方向进一步增强。 ŽSOLUTION：制造方法包括制备磁粉6的步骤（a），将磁粉6填充到空腔中的步骤（b），通过单轴压制磁粉6形成压块的步骤（c）。在z轴方向上彼此相对的一对加压面7a，8a之间的空腔，以及对该压块施加去磁处理的步骤（d）。金属模具包括由铁磁体构成的第一金属模具构件和由非磁性体构成的第二金属模具。步骤（c）包括在垂直于z轴方向的第一方向上将取向磁场9施加到压块的步骤（c1）。至少在磁粉6的相对密度达到约0.4或更高时，将取向磁场9施加到磁粉6上，并且与施加到腔的磁场9交叉的面是第一面11金属模具构件。 Ž', 'JP2005178249', 1118937600, 'JP4687267B2', 1306252800, 1167235200, NULL, 1298563200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 20, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 10, 0, 0, 0, 0, NULL, NULL, NULL, '山田 正文', NULL, 'JP1983167701A | JP1986140125A | JP1990146705A | JP1997017677A | JP1998172850A | JP1998326705A | JP1999256203A | JP2002047503A | JP2003193107A | JP2004002998A', NULL, NULL, 1, '\\20220510\\6e6bc0d8a6eb40798f65bd1dccf2ab19.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 39139, 39141, 39140, 2);
INSERT INTO `os_patent` VALUES (22886, 'Method and system for manufacturing sintered rare-earth magnet having magnetic anisotropy', '具有磁各向异性的稀土烧结磁体的制造方法和系统', 'US8545641B2', 'A method for manufacturing a sintered rare-earth magnet having a magnetic anisotropy, in which a very active powder having a small grain size can be safely used in a low-oxidized state. A fine powder as a material of the sintered rare-earth magnet having a magnetic anisotropy is loaded into a mold until its density reaches a predetermined level. Then, in a magnetic orientation section, the fine powder is oriented by a pulsed magnetic field. Subsequently, the fine powder is not compressed but immediately sintered in a sintering furnace. A multi-cavity mold for manufacturing a sintered rare-earth magnet having an industrially important shape, such as a plate magnet or an arched plate magnet, may be used.', '一种制造具有磁各向异性的烧结稀土磁体的方法，其中具有小晶粒尺寸的非常活泼的粉末可以安全地用于低氧化状态。将作为具有磁各向异性的烧结稀土类磁铁材料的细粉末装入模具中，直至其密度达到预定水平。然后，在磁取向部分中，细粉末通过脉冲磁场取向。随后，细粉未被压缩，而是立即在烧结炉中烧结。可以使用用于制造具有工业上重要形状的烧结稀土磁体的多腔模具，例如平板磁体或拱形板磁体。', 'US11/630898', 1120060800, 'US8545641B2', 1380556800, 1193241600, NULL, 1380556800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 29, 3, 0, 0, 0, NULL, NULL, NULL, '2004195935', 'JP', 1088611200, 20, 20, NULL, NULL, 84, 8, 1, 1, 6, NULL, '868', NULL, 'KING, ROY', 'HAUG, TIMOTHY', 'JP1980096616A | JP1982000914A | JP1984046008A | JP1984089401A | JP1984163802A | JP1985032306A | JP1985063304A | JP1985182104A | JP1986044414A | JP1988033505A | JP1988317643A | JP1990003903A | JP1990250922A | JP1991224203A | JP1992363010A | JP1993234789A | JP1994096973A | JP1994108104A | JP1994322469A | JP1995057914A | JP1995153612A | JP1996111308A | JP1996167515A | JP1996167516A | JP1997070696A | JP1997078103A | JP1997169301A | JP1998008104A | JP1999001308A | JP1999049101A | JP2000096104A | JP2000109903A | JP2000306753A | JP2001028309A | JP2001323301A | JP2002008935A | JP2002088403A | JP2002160096A | JP2002170728A | JP2002208509A | JP2003166001A | JP2004002998A | US20020159909A1 | US20040241033A1 | US20050076973A1 | US2762777A | US2762778A | US3684593A | US4792367A | US5004580A | US5250255A | US5672363A', 'RU2631055C2 | US11235300B2 | US20110070118A1 | US20120176212A1 | US20130052290A1 | US20130343946A1 | US8870560B2 | US9831034B2', 'Dec. 16, 2010 Office Action issued in European Patent Application No. 05 765 338.8. cited by applicant | Feb. 8, 2012 Korean Office Action issued in Korean Application No. 10-2007-7000697 with English-language translation. cited by applicant. | Harris, \"Monocrystalline powder processing,\" Rare-earth Iron Permanent Magnets, Edited by J.M.D. Coey, Trinity College, Clarendon Press, Oxford, pp. 340-341, 1996. cited by applicant | Jun. 14, 2010 Supplementary European Search Report issued in European Patent Application No. 05 765 338.8. cited by applicant | Oct. 25, 2011 Office Action issued in Taiwanese Application No. 94122355 (with translation). cited by applicant | Ormerod, \"Powder metallurgy of rare earth permanent magnets,\" Powder Metallurgy, vol. 32, No. 4, pp. 244-249, 1989. cited by applicant', 1, '\\20220510\\b168602eb40345b5a74d104444572e97.png', NULL, NULL, 1, NULL, NULL, 42, NULL, NULL, NULL, 39091, 39093, 39092, 23);
INSERT INTO `os_patent` VALUES (22887, '希土類焼結磁石及びその製造方法', '稀土烧结磁体及其制造方法', 'JP4645336B2', '【課題】AlやCuを添加された場合の保磁力と同等の保磁力を発揮しつつ、AlやCuを添加された場合よりも残留磁束密度を向上した希土類焼結磁石を提供する。\n\n【解決手段】本発明の希土類焼結磁石は、12.0原子%〜15.0原子%の希土類元素R(Rは、Nd、Pr、Gd、Tb、Dy、及びHoからなる群から選択された少なくとも一種の元素であり、Nd及び/又はPrを50%以上含む)と、5.5原子%〜8.5原子%のBと、0.005原子%〜0.30原子%のAgと、残部Fe及び不可避的不純物とを含有する。\n\n【選択図】図1', '要解决的问题：提供一种稀土烧结磁体，与添加Al和Cu的磁通密度相比，其剩余磁通密度得到改善，同时显示出与添加Al和Cu的矫顽力相当的矫顽力。 ŽSOLUTION：在稀土烧结磁体中，12.0至15.0原子％的稀土元素R（R是选自由Nd，Pr，Gd，Tb，Dy和Ho组成的组中的至少一种元素，并且包含在至少≥50％的Nd和/或Pr），5.5至8.5原子％的B，0.005至0.30原子％的Ag，余量的Fe和不可避免的杂质。 Ž', 'JP2005207645', 1121356800, 'JP4645336B2', 1299600000, 1170259200, NULL, 1292515200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 10, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 16, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '長谷川 直也', NULL, NULL, NULL, NULL, 1, '\\20220510\\67fffab0ada44aafba3bcfc0082dc5ea.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 39142, 39144, 39143, 16);
INSERT INTO `os_patent` VALUES (22888, 'Method for producing rare earth metal-based permanent magnet having copper plating film on the surface thereof', '制造在其表面上具有镀铜膜的稀土金属基永磁体的方法', 'US7785460B2', '[Problems] To provide a method for producing a rare earth metal-based permanent magnet having on the surface thereof a copper plating film by using a novel plating solution for use in a copper electroplating treatment capable of forming a copper plating film having excellent adhesiveness on the surface of a rare earth metal-based permanent magnet.\n\n[Means for Resolution] The method for producing a rare earth metal-based permanent magnet having a copper plating film on the surface thereof according to the invention is characterized in that it comprises forming a copper plating film on the surface of a rare earth metal-based permanent magnet by means of a copper electroplating treatment by using a plating solution having its pH adjusted to a range from 9.0 to 11.5 and containing at least the following three components: (1) Cu2+ ions, (2) a chelating agent having a chelate stability constant of 10.0 or higher for Cu2+ ions, and (3) a chelating agent having a chelate stability constant of 16.0 or higher for Fe3+ ions (where, the aforementioned chelate stability constants are confined to conditions of pH 9.0 to 11.5).', '[问题]提供一种制备稀土金属基永磁体的方法，该永磁体在其表面上具有通过使用能够形成具有优异粘附性的铜电镀处理的铜电镀处理的新型电镀液而具有铜镀膜。稀土金属基永磁体的表面。\n\n[解决方法]根据本发明的在其表面上具有镀铜膜的稀土金属基永磁体的制造方法的特征在于，其包括在稀土金属的表面上形成铜镀膜 - 基于铜电镀处理，通过使用其pH值调节至9.0至11.5并且至少含有以下三种组分的电镀液的基于永久磁铁：（1）Cu 2+离子，（2）具有螯合物的螯合剂Cu 2+离子的稳定常数为10.0或更高，和（3）Fe 3+离子的螯合稳定常数为16.0或更高的螯合剂（其中，上述螯合稳定常数限于pH9.0至11.5的条件）。', 'US11/659849', 1123516800, 'US7785460B2', 1283184000, 1195660800, NULL, 1283184000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 6, 1, 0, 0, 0, NULL, NULL, NULL, '2004233302', 'JP', 1092067200, 7, 9, NULL, NULL, 10, 1, 0, 0, 1, NULL, '851', NULL, 'MCNEIL, JENNIFER C', 'SAVAGE, JASON L', 'JP2002105690A | JP2002146585A | JP2002327278A | JP2002332592A | JP2004137533A | US20030052013A1 | US20060231409A1 | US20080118747A1 | US20080131708A1 | US20090035603A1', 'US9905345B2', 'Notification of Reason for Refusal issued on Nov. 21, 2006 to the corresponding Japanese patent application No. 2006-531642. cited by other.', 1, NULL, NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39145, 39147, 39146, 9);
INSERT INTO `os_patent` VALUES (22889, '銅めっき被膜を表面に有する希土類系永久磁石の製造方法', '制造在其表面上具有镀铜膜的稀土基永磁体的方法', 'JP3972111B2', '【課題】  希土類系永久磁石の表面に密着性に優れた銅めっき被膜を形成することができる、新規な電気銅めっき処理用めっき液を使用した、銅めっき被膜を表面に有する希土類系永久磁石の製造方法を提供すること。\n\n【解決手段】  本発明の銅めっき被膜を表面に有する希土類系永久磁石の製造方法は、pHが9.0~11.5に調整され、(1)Cu2+イオン、(2)Cu2+イオンとのキレート安定度定数が10.0以上のキレート剤、(3)Fe3+イオンとのキレート安定度定数が16.0以上のキレート剤の少なくとも3成分を含有するめっき液(前記のキレート安定度定数はpHが9.0~11.5の時という条件付のものである)を使用して、電気銅めっき処理により、希土類系永久磁石の表面に銅めっき被膜を形成することを特徴とする。\n\n【選択図】  なし', '要解决的问题：提供一种在其表面上具有铜镀膜的新型稀土基永磁体，其使用新型电镀液进行电解镀铜处理，能够形成对稀土基永磁体表面具有优异粘附性的铜镀膜。提供制造方法。\n\n解决方案：在其表面上制备具有本发明的铜镀膜的稀土基永磁体的方法具有调节至9.0至11.5的pH，和（1）Cu 2 +离子，（2）与Cu 2 +离子的螯合稳定常数是10.0螯合剂，（3）螯合剂的至少3种成分，螯合稳定常数为16.0以上，Fe 3+离子（上述螯合稳定常数为pH9.0~11.5的条件）其特征在于，通过电解镀铜处理在稀土类永久磁铁的表面上形成铜镀膜。\n\n【选择图】无', 'JP2006531642', 1123516800, 'JP3972111B2', 1188921600, 1188921600, NULL, 1182441600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, '2004233302', 'JP', 1092067200, 7, 9, NULL, NULL, 0, 2, 1, 2, 0, NULL, NULL, NULL, '市枝 信之', NULL, NULL, 'US9287027B2 | WO2012111353A1', NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39145, 39147, 39146, 9);
INSERT INTO `os_patent` VALUES (22890, 'Method for producing rare earth metal-based permanent magnet having copper plating film on the surface thereof', '在其表面上具有铜电镀膜的稀土金属基永磁体的制造方法', 'PH12007500346B1', 'The present invention relates to a method for producing a rare earth metal-based permanent magnet having on the surface thereof a copper plating film having excellent adhesiveness by using a novel plating solution for use in a copper electroplating treatment.', '本发明涉及一种在其表面上产生稀土金属基永磁体的方法,其通过使用用于铜电镀处理的新型电镀液具有优异的粘合性的镀铜膜。', 'PH12007500346', 1123516800, 'PH12007500346B1', 1302192000, 1123516800, NULL, 1302192000, '菲律宾', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 23, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, '856', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 39148, 39150, 39149, 2);
INSERT INTO `os_patent` VALUES (22891, '希土類焼結磁石及びその製造方法', '稀土烧结磁体及其制造方法', 'JP5235264B2', '【課題】AlやCuを添加された場合の保磁力と同等の保磁力を発揮しつつ、AlやCuを添加された場合よりも残留磁束密度を向上した希土類焼結磁石を提供する。\n\n【解決手段】本発明の希土類焼結磁石は、12.0原子%〜15.0原子%の希土類元素R(Rは、Nd、Pr、Gd、Tb、Dy、及びHoからなる群から選択された少なくとも一種の元素であり、Nd及び/又はPrを50%以上含む)と、5.5原子%〜8.5原子%のBと、0.005原子%〜0.40原子%のNiと、残部Fe及び不可避的不純物とを含有する。\n\n【選択図】図1', '要解决的问题：提供一种后土烧结磁体，其中与添加Al和Cu的情况相比，其剩余磁通密度得到改善，同时表现出的矫顽力几乎等于其在该情况下获得的矫顽力。 Al和Cu加入其中。 ŽSOLUTION：后土烧结磁铁含有12.0-15.0原子％的后土元素R（R是选自Nd，Pr，Gd，Tb，Dy和Ho的一种或多种元素，并含有Nd / Pr不少于超过50％），B为5.5-8.5原子％，Ni为0.005-0.40原子％，残留部分为Fe，且不可避免的杂质。 Ž', 'JP2005233110', 1123689600, 'JP5235264B2', 1373385600, 1172073600, NULL, 1365091200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 10, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 16, NULL, NULL, 11, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP1984089401A | JP1984132104A | JP1985032306A | JP1986034242A | JP1986221353A | JP1988220803A | JP1988241141A | JP1988241142A | JP1989220803A | JP1992133406A | JP1993234733A', NULL, NULL, 1, '\\20220510\\68db3d3572c94af482904f36a12256b5.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39151, 39144, 39143, 16);
INSERT INTO `os_patent` VALUES (22892, '希土類系磁石粉末の製造方法', '稀土磁铁粉末的制造方法', 'JP4650218B2', '【課題】優れた磁気特性および耐食性を有するHDDR粉末の製造方法を提供する。\n\n【解決手段】本発明の希土類系磁石粉末の製造方法では、まず、R-Fe-B相を有する合金の粉末を用意する。そして、希土類金属元素を実質的に含まない非希土類層を前記合金粉末の表面の全体または一部に形成した後、水素を含む雰囲気中において750℃以上900℃未満の温度で熱処理を行う。この熱処理により、合金粉末に対して水素化·不均化処理を行う工程と、合金粉末に対して脱水素·再結合処理を行う工程とを行う。\n\n【選択図】なし', '要解决的问题：提供一种生产具有优异磁性和耐腐蚀性的HDDR粉末的方法。\n\n在本发明的稀土类磁铁粉末的制造方法中，首先，准备具有R-Fe-B相的合金粉末。然后，在合金粉末的整个表面或部分表面上形成基本上不含稀土金属元素的非稀土层，然后在含氢气氛中在750℃至低于900℃的温度下进行热处理。通过该热处理，进行对合金粉末进行氢化/歧化处理的步骤和对合金粉末的脱氢/再结合处理的步骤。\n\n【选择图】无', 'JP2005322396', 1131292800, 'JP4650218B2', 1300204800, 1179936000, NULL, 1293120000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '山田 倍司', NULL, NULL, NULL, NULL, 1, '\\20220510\\02c8b04210ef47ab917ba14a4bf68c68.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 39152, 39154, 39153, 2);
INSERT INTO `os_patent` VALUES (22893, '希土類焼結磁石の製造方法', '稀土烧结磁铁的制造方法', 'JP4635832B2', '【課題】AlやCuを添加された場合の保磁力と同等の保磁力を発揮しつつ、AlやCuを添加された場合よりも残留磁束密度を向上した希土類焼結磁石を提供する。\n\n【解決手段】本発明による希土類焼結磁石の製造方法は、12.0原子%〜15.0原子%の希土類元素(Nd、Pr、Gd、Tb、Dy、及びHoからなる群から選択された少なくとも一種の元素であり、Nd及び/又はPrを50%以上含む)と、5.5原子%〜8.5原子%の硼素(B)と、残部の鉄(Fe)及び不可避的不純物とを含有する希土類磁石用合金粉末であって、潤滑剤が添加された合金粉末を用意する。脂肪族カルボン酸銀塩または芳香族カルボン酸銀塩を含有する潤滑剤を合金粉末に添加した後、成形体の作製、焼結を行う。\n\n【選択図】図1', '要解决的问题：提供稀土烧结磁体，其中残余磁通密度比添加Al和Cu的情况大得多，同时显示出与添加Al和Cu时相同的矫顽力。 ŽSOLUTION：在稀土类烧结磁铁的制造方法中，稀土类磁铁合金粉末含有：12.0原子％~15.0原子％的稀土元素（选自Nd，Pr，Gd中的至少一种元素） ，Tb，Dy和Ho，并含有50％或更多的Nd和/或Pr）; 5.5原子％至8.5原子％的硼（B），铁（Fe）;其余部分中不可避免的杂质。制备合金粉末，向其中加入润滑剂。将含有脂肪族羧酸银盐或芳香族羧酸银盐的润滑剂添加到合金粉末中，制造压块并烧结。 Ž', 'JP2005324058', 1131379200, 'JP4635832B2', 1298390400, 1180540800, NULL, 1291305600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 9, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 16, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '山田 正文', NULL, NULL, NULL, NULL, 1, '\\20220510\\df618e13131a40fca05b9efc427ba289.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39155, 39144, 39143, 16);
INSERT INTO `os_patent` VALUES (22894, '希土類焼結磁石及びその製造方法', '稀土烧结磁体及其制造方法', 'JP4972919B2', '【課題】AlやCuを添加された場合の保磁力と同等の保磁力を発揮しつつ、AlやCuを添加された場合よりも残留磁束密度を向上した希土類焼結磁石を提供する。\n\n【解決手段】本発明の希土類焼結磁石は、12.0原子%〜15.0原子%の希土類元素R(Rは、Nd、Pr、Gd、Tb、Dy、及びHoからなる群から選択された少なくとも一種の元素であり、Nd及び/又はPrを50%以上含む)と、5.5原子%〜8.5原子%のBと、0.005原子%〜0.20原子%のAuと、残部Fe及び不可避的不純物とを含有する。\n\n【選択図】図1', '要解决的问题：提供一种稀土烧结磁体，其中剩余磁通密度比添加Al或Cu的情况更加改善，同时在添加Al或Cu的情况下显示出与矫顽力相同的矫顽力。 ŽSOLUTION：本发明的稀土类烧结磁铁含有12.0-15.0原子％的稀土元素R（R是选自由Nd，Pr，Gd，Tb，Dy和Ho组成的组中的至少一种元素， Nd和/或Pr含有≥50％，5.5-8.5原子％B，0.005-0.20原子％Au，余量Fe含有不可避免的杂质。 Ž', 'JP2005349280', 1133452800, 'JP4972919B2', 1341936000, 1182355200, NULL, 1334851200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 9, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 16, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '山田 正文', NULL, NULL, NULL, NULL, 1, '\\20220510\\33212714d85b41629bcc446324cc6c49.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39156, 39144, 39143, 16);
INSERT INTO `os_patent` VALUES (22895, '철기재의 희토류계 나노컴포지트 자석 및 그 제조방법', '铁基稀土纳米复合磁体及其制造方法', 'KR101311058B1', '본 발명의 철 기재의 희토류 나노컴포지트 자석은, 조성식 T100-x-y-z-nQxRyTizMn로 표현된다.  여기서 T는 Fe 또는Fe의 일부가 Co 및 Ni로 되는 군에서 선택되는 1종 이상의 원소로 치환된 천이금속원소, Q는 B 및 C로 되는 군중에서 선택되는 적어도 1종의 원소, R은 La 및 Ce를 실질적으로 포함하지 않는 1종 이상의 희토류원소, M은 Al,Si, V, Cr, Mn, Cu, Zn, Ga, Zr, Nb, Mo, Ag, Hf, Ta, W, Pt, Au, 및 Pb로 되는 군에서 선택되는 1종 이상의 금속원소이다.  조성비율 x,y,z,  및 n이 각각 5≤x≤10원자%, 7≤y≤10원자%, 0.1≤z≤5원자%, 0≤n≤10원자%를만족한다.  이러한 자석은 자기적으로 결합한 나노컴포지트 자석구조를 형성하는 R2Fe14B형 화합물상 및 α-Fe상의 평균결정입경은 1nm 이상 20nm 이하아고, 보자력이 400㎄/m 이상, 잔류자속밀도 0.9T 이상의 자기특성을 가진다.', '本发明的铁基稀土纳米复合磁体由组成式T100-x-y-z-nQxRyTizMn表示。其中T是选自Fe和Fe中的至少一种元素，Q是选自B和C中的至少一种元素，R是选自La和C中的至少一种元素。至少一种基本上不含Ce和M的稀土元素是选自Al，Si，V，Cr，Mn，Cu，Zn，Ga，Zr，Nb，Mo，Ag，Hf，Ta中的至少一种元素， Pb。＆lt;＆gt;组成比x，y，z和n分别满足5≤X≤10原子％，7≤Y≤10原子％，0.1≤Z≤5原子％和0≤N≤10原子％。这些磁铁具有磁特性，使得R2Fe14B型化合物相和形成磁性结合的纳米复合磁铁结构的α-Fe相的平均晶粒尺寸为1nm以上且20nm以下，矫顽力为400cd / m 2以上，剩余磁通密度为0.9T以上。我有。', 'KR1020067010044', 1134403200, 'KR101311058B1', 1379952000, 1191945600, NULL, 1379001600, '韩国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 15, 2, 0, 0, 0, NULL, NULL, NULL, '2004364544', 'JP', 1103126400, 14, 14, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2001244105A | JP2002100507A | JP2002343659A | JP2003286548A', NULL, NULL, 1, '\\20220510\\20b1863126ff4bd4958277902f6768da.png', NULL, NULL, 1, NULL, NULL, 14, NULL, NULL, NULL, 39157, 39159, 39158, 15);
INSERT INTO `os_patent` VALUES (22896, '鉄基希土類系ナノコンポジット磁石およびその製造方法', '铁基稀土类纳米复合磁体及其制造方法', 'JP4169074B2', '本発明の鉄基希土類ナノコンポジット磁石は、組成式T100-x-y-z-nQxRyTizMnで表される。ここで、TはFe、または、Feの一部がCoおよびNiからなる群から選択された1種以上の元素で置換された遷移金属元素、QはBおよびCからなる群から選択された少なくとも1種の元素、RはLaおよびCeを実質的に含まない1種以上の希土類元素、Mは、Al、Si、V、Cr、Mn、Cu、Zn、Ga、Zr、Nb、Mo、Ag、Hf、Ta、W、Pt、Au、およびPbからなる群から選択された1種以上の金属元素である。組成比率x、y、zおよびnが、それぞれ、5≦x≦10原子%、7≦y≦10原子%、0.1≦z≦5原子%、0≦n≦10原子%を満足する。この磁石は、磁気的に結合したナノコンポジット磁石構造を形成するR2Fe14B型化合物相およびα-Fe相が含有し、前記R2Fe14B型化合物相の平均結晶粒径は30nm以上300nm以下、前記α-Fe相の平均結晶粒径は1nm以上20nm以下であり、保磁力が400kA/m以上、残留磁束密度0.9T以上の磁気特性を有する。', '本发明的铁基稀土纳米复合磁体由组成式T100-xyz-nQxRyTizMn表示。这里，T是Fe，或其中Fe的一部分被选自Co和Ni中的一种或多种元素取代的过渡金属元素，并且Q至少选自B和C。一种元素，R是一种或多种基本上不含La和Ce的稀土元素，M是Al，Si，V，Cr，Mn，Cu，Zn，Ga，Zr，Nb，Mo，Ag，它是选自Hf，Ta，W，Pt，Au和Pb中的一种或多种金属元素。组成比x，y，z和n分别满足5≤x≤10原子％，7≤y≤10原子％，0.1≤z≤5原子％和0≤n≤10原子％。该磁体含有R2Fe14B型化合物相和α-Fe相，形成磁耦合纳米复合磁体结构，R2Fe14B型化合物相的平均晶粒尺寸为30nm或更大且300nm或更小，以及α-Fe相平均晶粒尺寸为1nm以上且20nm以下，并且具有矫顽力为400kA / m以上且剩余磁通密度为0.9T以上的磁特性。', 'JP2006519681', 1134403200, 'JP4169074B2', 1224604800, 1213200000, NULL, 1218729600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 2, 0, 0, 0, NULL, NULL, NULL, '2004364544', 'JP', 1103126400, 14, 14, NULL, NULL, 17, 0, 0, 0, 0, NULL, NULL, NULL, '山田 正文', NULL, 'JP1996162312A | JP1998053844A | JP2000096194A | JP2000286114A | JP2001244105A | JP2001319821A | JP2001323343A | JP2002100507A | JP2002329604A | JP2002343659A | JP2003158008A | JP2003275851A | JP2003286548A | JP2004014906A | JP2004235508A | JP2004306054A', NULL, NULL, 1, '\\20220510\\d49c2af955834575901415c6ea6d1875.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39157, 39159, 39158, 15);
INSERT INTO `os_patent` VALUES (22897, 'Iron-based rare-earth nanocomposite magnet and method for producing the magnet', '铁基稀土纳米复合磁铁及其制造方法', 'US7842140B2', 'The iron-based rare-earth nanocomposite magnet of the present invention has a composition T100−x−y−z−nQxRyTizMn, where T is Fe or a transition metal element in which Fe is partially replaced by Co and/or Ni; Q is B and/or C; R is at least one rare-earth element including substantially no La or Ce; and M is at least one metal element selected from Al, Si, V, Cr, Mn, Cu, Zn, Ga, Zr, Nb, Mo, Ag, Hf, Ta, W, Pt, Au and Pb. x, y, z and n satisfy 5≦x≦10 at %, 7≦y≦10 at %, 0.1≦z≦5 at % and 0≦n≦10 at %, respectively. The magnet includes R2Fe14B-type compound phases and α—Fe phases forming a magnetically coupled nanocomposite magnet structure. The R2Fe14B-type compound phases have an average crystal grain size of 30 nm to 300 nm and the α—Fe phases have an average crystal grain size of 1 nm to 20 nm. The magnet has magnetic properties including a coercivity of at least 400 kA/m and a remanence of at least 0.9 T.', '本发明的铁基稀土纳米复合磁体具有组成T100-x-y-z-nQxRyTizMn，其中T是Fe或其中Fe被Co和/或Ni部分取代的过渡金属元素; Q是B和/或C; R是至少一种稀土元素，基本上不含La或Ce; M是选自Al，Si，V，Cr，Mn，Cu，Zn，Ga，Zr，Nb，Mo，Ag，Hf，Ta，W，Pt，Au和Pb中的至少一种金属元素。 x，y，z和n分别满足5≤x≤10at％，7≤y≤10at％，0.1≤z≤5at％和0≤n≤10at％。磁体包括R2Fe14B型化合物相和形成磁耦合纳米复合磁体结构的α-Fe相。 R2Fe14B型化合物相的平均晶粒尺寸为30nm至300nm，α-Fe相的平均晶粒尺寸为1nm至20nm。磁铁具有磁性，包括矫顽力至少为400 kA / m，剩磁至少为0.9 T.', 'US10/596880', 1134403200, 'US7842140B2', 1291046400, 1252512000, NULL, 1291046400, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 2, 0, 0, 0, NULL, NULL, NULL, '2004364544', 'JP', 1103126400, 14, 14, NULL, NULL, 28, 10, 0, 7, 4, NULL, '850', NULL, 'SHEEHAN, JOHN P', NULL, 'EP1207537A1 | JP1996162312A | JP1998053844A | JP2000286114A | JP2001244105A | JP2001319821A | JP2002100507A | JP2002343659A | JP2003158008A | JP2003286548A | JP2004014906A | JP2004122230A | JP2004235508A | JP2004306054A | JP3264664B1 | US20020003006A1 | US20020036559A1 | US20030062097A1 | US20040020569A1 | US20040051614A1 | US20040067154A1 | US20040099346A1 | US20040194856A1 | US5872501A | US6183571B1 | US6695929B2 | US6706124B2', 'US10290406B2 | US10395823B2 | US11270841B2 | US8961868B2 | US9044834B2 | US9067284B2 | US9095940B2 | US9144865B2 | US9336932B1 | US9774220B2', 'Chang et al., \"The Effects of Refractory Metals on the Magnetic Properties of .alpha.-Fe/R2Fe14B-Type Nanocomposites\", IEEE Transaction on Magnetics, Sep. 1999, vol. 35 No. 5, pp. 3265-3267. cited by other. | Official Communication issued in the corresponding European Patent Application No. 05816736.2, mailed on Apr. 1, 2010. cited by other . | Official Communication issued in the corresponding International Application No. PCT/JP2005/022857, mailed on Jan. 24, 2006. cited by other . | Official communication issued in counterpart Japanese Application No. 2006-519681, mailed on Mar. 18, 2008. cited by other .', 1, '\\20220510\\4ba6ce6b1ef9454caf2b77c822452dd4.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39157, 39159, 39158, 15);
INSERT INTO `os_patent` VALUES (22898, 'Iron-based rare-earth nanocomposite magnet and method for producing the magnet', '基于铁稀土纳米复合磁体和制造磁铁的方法', 'PH12006501295B1', NULL, NULL, 'PH12006501295', 1134403200, 'PH12006501295B1', 1315152000, 1134403200, NULL, 1315152000, '菲律宾', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 48, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, '856', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39160, 39162, 39161, 2);
INSERT INTO `os_patent` VALUES (22899, 'NdFeB系磁石の製造方法', '生产NdFeB磁体的方法', 'JP4391985B2', '【課題】内部に欠陥がなく、配向性の高いNdFeB系焼結磁石を製造する方法を提供する。\n\n【解決手段】NdFeB系磁石の材料の合金粉末に0.1重量%以上の有機潤滑剤を添加して撹拌混合し、3.5g/cm3を越え、4.2g/cm3を越えない充填密度で該合金粉末をモールド内に充填し、5T以上のパルス磁界で合金粉末を配向させた後、合金粉末をモールドごと加熱して焼結させる。上記有機潤滑剤の添加及び攪拌混合工程により合金粉末が高潤滑状態になるため、3.5g/cm3を越える高い充填密度で合金粉末をモールド内に充填することができるようになるため、焼結後の磁石の内部に欠陥が形成されない。また、このように高潤滑状態にすると共に5T以上の高いパルス磁界で瞬間的に強い力を合金粉末に与えることにより、配向性を高めることができる。\n\n【選択図】図1', '要解决的问题：提供一种制造NdFeB基烧结磁体的方法，该烧结磁体内部没有缺陷并且具有高取向性。溶液：将0.1重量％或更高的有机润滑剂加入到NdFeB基磁体材料的合金粉末中，用于搅拌和混合;将合金粉末填充到模具中，其填充密度超过3.5g / cm 3，并且不超过4.2g / cm 3，;合金粉末的取向为5T或更高的脉冲磁场;合金粉末与模具一起加热烧结。由于合金粉末通过有机润滑剂的添加/搅拌混合过程处于高度润滑状态，因此可以将合金粉末填充到具有高填充密度超过3.5g / cm 3 SPP的模具中，从而防止烧结后在磁铁内部形成缺陷。以这种方式，通过高度润滑合金粉末并在5T或更高的高脉冲磁场中立即提供强大的功率，可以改善取向性能。 Ž', 'JP2005378821', 1135699200, 'JP4391985B2', 1261584000, 1184169600, NULL, 1255622400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 0, 0, 0, 0, 0, NULL, '863', NULL, '田中 純一', NULL, NULL, NULL, NULL, 1, '\\20220510\\0e9513d5e72644a7a9fa6f31a2e24939.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39163, 39165, 39164, 4);
INSERT INTO `os_patent` VALUES (22900, '銅めっき被膜を表面に有する希土類系永久磁石', '稀土基永磁体，其表面具有铜镀膜', 'JP4650275B2', '(修正有)\n\n【課題】 希土類系永久磁石の表面に密着性に優れた銅めっき被膜を形成することができる電気銅めっき処理用めっき液を使用した、銅めっき被膜を表面に有する希土類系永久磁石の製造方法を提供する。\n\n【解決手段】 銅めっき被膜を表面に有する希土類系永久磁石の製造方法は、pHが9.0〜11.5に調整され、(1)Cu2+イオン、(2)Cu2+イオンとのキレート安定度定数が10.0以上のキレート剤、(3)Fe3+イオンとのキレート安定度定数が16.0以上のキレート剤の少なくとも3成分を含有するめっき液(前記のキレート安定度定数はpHが9.0〜11.5の時という条件付のものである)を使用して、電気銅めっき処理により、希土類系永久磁石の表面に銅めっき被膜を形成することを特徴とする。\n\n【選択図】 なし', '要解决的问题：提供一种制造在其表面上具有铜镀膜的稀土元素基永磁体的方法，其使用新颖的电镀液用于电解镀铜处理并且允许形成优异的铜镀膜在稀土金属基永磁体表面上的粘合性。 ŽSOLUTION：制备在其表面上具有铜镀膜的稀土元素基永磁体的方法包括通过使用电镀溶液的电解镀铜处理在稀土元素基永磁体的表面上形成铜镀膜。调节pH为9.0至11.5，并包含三种组分：（1）：Cu  2 + 离子; （2）螯合剂，其螯合稳定常数，Cu  2 + 离子≥10.0; （3）螯合剂，其表现出螯合稳定常数，Fe  + +离子≥16.0（在pH9.0~11.5下测定螯合稳定常数的条件下）。 Ž', 'JP2006004882', 1136995200, 'JP4650275B2', 1300204800, 1171468800, NULL, 1293120000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, '2004233302', 'JP', 1092067200, 2, 9, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '市枝 信之', NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 39166, 39147, 39146, 9);
INSERT INTO `os_patent` VALUES (22901, '希土類焼結磁石及びその製造方法', '稀土烧结磁体及其制造方法', 'JP4687493B2', '【課題】AlやCuを添加された場合の保磁力と同等の保磁力を発揮しつつ、AlやCuを添加された場合よりも残留磁束密度を向上した希土類焼結磁石を提供する。\n\n【解決手段】本発明の希土類焼結磁石は、12.0原子%〜15.0原子%の希土類元素(Nd、Pr、Gd、Tb、Dy、及びHoからなる群から選択された少なくとも一種の元素であり、Nd及び/又はPrを50%以上含む)と、5.5原子%〜8.5原子%の硼素(B)と、0.005原子%〜0.30原子%の銀(Ag)と、0.05原子%〜1.0原子%の元素M(Mは、Ti、V、Cr、Zr、Nb、Mo、Hf、Ta、およびWからなる群から選択された少なくとも1種の元素)と、残部の鉄(Fe)及び不可避的不純物とを含有する。\n\n【選択図】図1', '要解决的问题：提供一种稀土烧结磁体，其在添加Al或Cu的情况下表现出与矫顽力相当的矫顽力，并且与添加Al或Cu的情况相比具有改善的剩余磁通密度。\n\n本发明的稀土类烧结磁铁含有选自12.0原子％~15.0原子％的稀土元素（Nd，Pr，Gd，Tb，Dy，和Ho）中的至少一种元素。含有至少50％的Nd和/或Pr，5.5原子％至8.5原子％的硼（B），0.005原子％至0.30原子％的银（Ag）和0.05原子％至1.0原子％的元素M（M是选自Ti，V，Cr，Zr，Nb，Mo，Hf，Ta和W中的至少一种元素）和余量的铁（Fe）和不可避免的杂质含。\n\n点域1', 'JP2006039274', 1140019200, 'JP4687493B2', 1306252800, 1188403200, NULL, 1298563200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 9, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 16, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '山田 正文', NULL, NULL, NULL, NULL, 1, '\\20220510\\6205c49f45c24272a4142f317de19f0e.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39167, 39144, 39143, 16);
INSERT INTO `os_patent` VALUES (22902, '希土類磁石の製造方法および含浸装置', '稀土磁铁的制造方法和浸渍装置', 'JP4743120B2', '本発明のＲ−Ｆｅ−Ｂ系希土類磁石の製造方法は、希土類合金粉末を乾式プレス法で圧縮成形することによって成形体２０を作製するプレス工程（Ａ）と、成形体２０の表面から酸化防止剤を成形体に含浸させる工程（Ｂ）と、成形体２０を焼結させる工程（Ｃ）とを包含する。工程（Ｂ）において、成形体２０は、減圧された容器１００内で酸化防止剤に含浸される。', '在本发明的R-Fe-B稀土类磁铁的制造方法中，通过干压法对稀土类合金粉末进行压缩成形，从成形体20的表面进行氧化防止，制造成形体20的加压工序（A）以及将试剂浸渍到成形体中的步骤（B）和烧结成形体20的步骤（C）。在步骤（B）中，在减压下在容器100中用抗氧化剂浸渍模塑体20。', 'JP2006536499', 1141920000, 'JP4743120B2', 1312905600, 1219248000, NULL, 1305820800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 2, 0, 0, 0, NULL, NULL, NULL, '2005071053', 'JP', 1110729600, 4, 4, NULL, NULL, 13, 0, 0, 0, 0, NULL, NULL, NULL, '長谷川 直也', NULL, 'JP1988255302A | JP1990163906A | JP1992273413A | JP1994006728A | JP1994267720A | JP1998321451A | JP1999067514A | JP1999224811A | JP2002008935A | JP2002020802A | JP2002170728A | JP2005294556A | US5489343A', NULL, NULL, 1, '\\20220510\\339422892d35481696ec0354647f7532.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39168, 39170, 39169, 4);
INSERT INTO `os_patent` VALUES (22903, '鉄基希土類系ナノコンポジット磁石およびその製造方法', '铁基稀土类纳米复合磁体及其制造方法', 'JP4766045B2', '本発明による鉄基希土類系ナノコンポジット磁石は、Nd2Fe14B相およびα-Fe相を含有する鉄基希土類系ナノコンポジット磁石であって、組成式T100-x-y-z-n(B1-qCq)xRyTizMn(Tは、Fe、CoおよびNiからなる群から選択された少なくとも1種の元素であって、Feを必ず含む遷移金属元素、RはLaおよびCeを実質的に含まない少なくとも1種の希土類元素、Mは、Al、Si、V、Cr、Mn、Cu、Zn、Ga、Zr、Nb、Mo、Ag、Hf、Ta、W、Pt、Au、およびPbからなる群から選択された1種以上の金属元素)で表現され、組成比率x、y、z、n、およびqが、それぞれ、4≦x≦10原子%、6≦y≦10原子%、0.05≦z≦5原子%、0≦n≦10原子%、0.05≦q≦0.5を満足する組成を有し、平均結晶粒径1nm~50nmのα-Fe相の含有率は5体積%以上60体積%以下、平均結晶粒径5nm~100nmのNd2Fe14B相の含有率は40体積%以上90体積%以下であり、少なくともTiおよびC(炭素)を含む非磁性相が前記α-Fe相および前記Nd2Fe14B相の粒界に存在する。', '根据本发明的铁基稀土纳米复合磁体是一种含有Nd2Fe14b相和α-Fe相的铁基稀土纳米复合磁体,以及组合式式T100-XYZN(B1-QCQ)XRYTIZMN (t是Fe,至少一种选自Co和Ni的组,其总是含有Fe,R的过渡金属元素是至少一个基本上没有La和Ce,M,Al的稀土元素,表达一种或多种选自Si,V,Cr,Mn,Cu,Zn,Ga,Zr,Nb,Mo,Au,Hf,Ta,W,Pt,Au和Pb)组成X的一种或多种金属元素。 y,z,n和q为4≤x≤10原子%,6≤y≤10原子%,0.05≤z≤5原子%,0≤n≤10原子%,α-Fe阶段的含量0.05≤q≤0.5,平均晶粒尺寸为1nm至50nm的α-fe相的含量为5重量%或更高,并且平均晶粒直径为5nm至100nm含有Nd2Fe14b相。速率为40%(体积)以上40%,且90%体积或更小,并且存在至少Ti和C(碳)的非磁性相存在于α-Fe相和Nd2Fe14b相的晶界处存在。', 'JP2007509294', 1142956800, 'JP4766045B2', 1315324800, 1220457600, NULL, 1308844800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 3, 0, 0, 0, NULL, NULL, NULL, '2005086826', 'JP', 1111593600, 10, 11, NULL, NULL, 10, 2, 0, 2, 0, NULL, NULL, NULL, '長谷川 直也', NULL, 'JP1995122412A | JP1996162312A | JP1998053844A | JP1999008109A | JP2001271145A | JP2002015907A | JP2002175908A | JP2002329604A | JP2003178908A | JP2003320442A', 'CN106141162A | CN106141162B', NULL, 1, '\\20220510\\1784a44e155c46b3974ed4251af1aed5.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39171, 39173, 39172, 12);
INSERT INTO `os_patent` VALUES (22904, '발명의 명칭 철 기재의 희토류계 나노컴포지트자석 및 그 제조방법', '发明名称铁基稀土纳米复合磁体及其制造方法', 'KR101326930B1', '본 발명에 의한 철 기재의 희토류계 나노컴포지트 자석은, Nd2Fe14B상 및 α-Fe상을 함유하는 철 기재의 희토류계나노컴포지트 자석으로서, 조성식 T100-x-y-z-n(B1-qCq)xRyTizMn(T는, Fe, Co 및 Ni로 이루어진 군에서 선택된 적어도1종의 원소로서, Fe를 반드시 포함하는 천이금속원소, R은 La 및 Ce를 실질적으로 포함하지 않는 적어도 1종의희토류원소, M은 Al,Si,V,Cr,Mn,Cu,Zn,Ga,Zr, Nb,Mo,Ag,Hf,Ta,W, Pt,Au 및 Pb로 이루어진 군에서 선택된 1종 이상의 금속원소)로 표현되고, 조성비율 x,y,z,n 및 q가, 각각, 4≤x≤10원자%, 6≤y≤10원자%, 0.05≤z≤5원자%,0≤n≤10원자%, 0.05≤q≤0.5를 만족하는 조성을 가지고, 평균결정입경 1㎚∼50㎚의 α-Fe상의 함유율은 5체적 %이상 60체적%이하, 평균결정입경 5㎚∼100㎚의 Nd2Fe14B상의 함유율은 40체적% 이상 90체적% 이하이고, 적어도 Ti및 C(탄소)를 포함하는 비자성상이 상기 α-Fe상 및 Nd2Fe14B상의 입계에 존재한다.', '一种铁基稀土类纳米复合磁体，是含有Nd 2 Fe 14 B相和α-Fe相的铁基稀土类纳米复合磁体，具有由经验式T100-xyzn表示的组成（B1- qCq）xRyTizMn（其中T是至少一种过渡金属元素，必不可少地包括铁，选自Fe，Co和Ni; R是至少一种基本上既不含La也不含Ce的稀土元素; M是1或更多的金属元素选自Al，Si，V，Cr，Mn，Cu，Zn，Ga，Zr，Nb，Mo，Ag，Hf，Ta，W，Pt，Au和Pb），比例x ，y，z，n和q满足关系4 <= x <= 10 at。％，6 <= y <= 10 at。％，0.05 <= z <= 5 at。％，0 <= n <= 10 at。％，0.05 <= q <= 0.5。在磁体中，平均晶粒直径为1-50nm的α-Fe相的含量为5-60体积％，平均晶粒直径为5-100nm的Nd2Fe14B相的含量为40-90体积％。在α-Fe相和Nd2Fe14B相之间的晶界处存在至少含有Ti和C（碳）的非磁性相。', 'KR1020067027601', 1142956800, 'KR101326930B1', 1384099200, 1196611200, NULL, 1383235200, '韩国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 15, 3, 0, 0, 0, NULL, NULL, NULL, '2005086826', 'JP', 1111593600, 10, 11, NULL, NULL, 2, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2002329604A | JP2003320442A', NULL, NULL, 1, '\\20220510\\0c471a30391645eba3895d279c0d47c6.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 39171, 39173, 39172, 12);
INSERT INTO `os_patent` VALUES (22905, 'Iron-based rare-earth-containing nanocomposite magnet and process for producing the same', '含铁基稀土纳米复合磁体和制造方法', 'PH12006502658B1', 'An iron-based rare-earth-containing nanocomposite magnet which is an iron-based rare-earth-containing nanocomposite magnet containing an Nd2Fe14B phase and an a-Fe phase and having a composition represented by the empirical formula T100-x-y-z-n(B1-qCq)xRyTizMn (wherein T is at least one transition metal element indispensably including iron and selected from the group consisting of Fe, Co, and Ni; R is at least one rare earth element substantially containing neither La nor Ce; and M is one or more metal elements selected from the group consisting of Al, Si, V, Cr, Mn, Cu, Zn, Ga, Zr, Nb, Mo, Ag, Hf, Ta, W, Pt, Au, and Pb), the proportions x, y, z, n, and q satisfying the relationships 4=x=10 at.%, 6=y=10 at.%, 0.05=z=5 at.%, 0=n=10 at.%, and 0.05=q=0.5, respectively. In the magnet, the content of the a-Fe phase having an average crystal grain diameter of 1-50 nm is 5-60 vol.%, and the content of the Nd2Fe14B phase having an average crystal grain diameter of 5-100 nm is 40-90 vol.%. A nonmagnetic phase containing at least Ti and C (carbon) is present at grain boundaries between the a-Fe phase and the Nd2Fe14B phase.', '含铁基稀土纳米复合磁体,其是含有Nd2Fe14b相和A-Fe相的铁基稀土纳米复合磁体,并具有由经验式T100-XYZN表示的组合物(B1-QCQ )Xrytizmn(其中T是至少一种过渡金属元素,该过渡金属元素不可或缺地包括铁,并选自Fe,Co和Ni; R是至少一个基本上含有La和Ce的稀土元素;并且m是一个或多个选自组的金属元素,由Al,Si,V,Cr,Mn,Cu,Zn,Ga,Zr,Nb,Mo,Ag,Hf,Ta,W,Pt,Au和Pb),比例X, y,z,n和q满足关系的关系4 = x = 10.%,6 = y = 10at。%,0.05 = z = 5at。%,0 = n = 10.%,0.05 = 0.05 = Q = 0.5分别。在磁体中,平均晶粒直径为1-50nm的A-Fe相的含量为5-60体积%,并且具有5-100nm的平均晶粒直径的Nd2Fe14b相的含量是5-100nm的40-90卷。%。含有至少Ti和C(碳)的非磁性相存在于A-Fe相和Nd2Fe14b相之间的晶界处。', 'PH12006502658', 1142956800, 'PH12006502658B1', 1358265600, 1142956800, NULL, 1358265600, '菲律宾', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 38, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, '856', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39174, 39176, 39175, 2);
INSERT INTO `os_patent` VALUES (22906, 'R-Fe-B系希土類焼結磁石およびその製造方法', 'R-Fe-B系稀土烧结磁铁及其制造方法', 'JP4788427B2', '(修正有)\n\n【課題】外郭部に重希土類元素RHが濃縮された主相結晶粒をR-Fe-B系希土類焼結磁石体の内部にも効率よく形成し、残留磁束密度の低下を抑制しつつ保磁力を向上させる。\n\n【解決手段】R-Fe-B系希土類焼結磁石の製造方法では、軽希土類元素RL(NdおよびPrの少なくとも1種)を主たる希土類元素Rとして含有するR2Fe14B型化合物結晶粒を主相として有する少なくとも1つのR-Fe-B系希土類焼結磁石体を用意する工程(A)を行った後、重希土類元素RH(Dy、Ho、およびTbからなる群から選択された少なくとも1種)を含有する箔または粉末をR-Fe-B系希土類焼結磁石体に接触させた状態でR-Fe-B系希土類焼結磁石体とともに処理室内に配置する工程(B)を行い、焼結磁石体を加熱することにより、箔または粉末から重希土類元素RHを焼結磁石体の表面に供給しつつ、焼結磁石体の内部に拡散させる工程(C)とを包含する。\n\n【選択図】図1', '（经修改）\n\nA也有效地形成主相晶粒的重稀土类元素RH集中在R-Fe-B系稀土烧结磁铁体的内部的外侧部分，同时抑制剩磁的下降的矫顽力改善。\n\n在A的R-Fe-B为基础的用于制造稀土类烧结磁体，R  2含有轻稀土类元素RL（Nd和Pr中的至少一种）作为主要的稀土类元素R 铁法 14 上述R-Fe-B中的至少一个之后基于制备具有B型化合物晶粒作为主相（a），RH重稀土类元素的稀土类烧结磁体（镝，Ho和其中至少一个是从由Tb组成的组中选择的含有箔或粉末的R-Fe-B系稀土类与所述磁铁体的R-Fe-B稀土烧结磁体接触的状态下烧结的）执行步骤（B）与所述主体放置在处理室中，通过在从箔或粉末，在烧结磁体的内部的烧结磁体本体的表面上供给的重稀土类元素RH加热该烧结磁体以及将杂质扩散到空间中的步骤（C）。\n\n点域1', 'JP2006081066', 1143043200, 'JP4788427B2', 1317744000, 1191427200, NULL, 1311868800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 3, 1, 1, 0, NULL, NULL, NULL, '山田 正文', NULL, NULL, 'CN110136909A | CN110136909B | GB2497573A', NULL, 1, '\\20220510\\21a14aa45fca4114bd34052ba01e2b49.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39177, 39179, 39178, 4);
INSERT INTO `os_patent` VALUES (22907, '固定砥粒ワイヤソー用加工液', '固定磨料线锯的工作液', 'JP4912714B2', '【課題】ホウ酸を実質的に含まない、希土類磁石の切断に用いられる固定砥粒ワイヤソー用の水系の加工液を提供する。\n\n【解決手段】本発明の加工液は、希土類磁石の切断に用いられる固定砥粒ワイヤソー用加工液であって、加工液の全量に対して、水溶性の3級アミンを30〜40質量%、水溶性の2級アミンを5〜10質量%、水に不溶な2級アミンを1〜5質量%、カルボン酸を10〜25質量%、水を30〜40質量%を含み、ホウ酸を実質的に含まず、アミンの水素以外の置換基は、それぞれ独立に、ヒドロキシアルキル基、アルキル基、シクロアルキル基、シクロアルケニル基、アシル基からなる群から選択される一種である。\n\n【選択図】図1', '用于切割稀土磁铁的固定磨料线锯的水基处理溶液,该磁铁不含基本上不含硼酸的硼酸。\n\n根据本发明的加工解决方案是用于固定磨料线锯的处理溶液,用于切割稀土磁体,以及相对于加工溶液的总量的水溶性叔胺30至40质量%。水溶性仲胺为5至10重量%,水不溶性仲胺为1-5重量%,10至25重量%的羧酸,10至40%重量的水,水为40至40重量%质量%,硼酸基本上是除胺的氢之外的取代基未独立地选自羟烷基,烷基,环烷基,环烯基和酰基独立地选自。\n\n图1', 'JP2006090489', 1143561600, 'JP4912714B2', 1334073600, 1192032000, NULL, 1327593600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 10, 4, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '品川 陽子', NULL, NULL, NULL, NULL, 1, '\\20220510\\e81165c9a62a4516b5b648886dabf99c.png', NULL, NULL, 2, NULL, NULL, 6, NULL, NULL, NULL, 39180, 39182, 39181, 2);
INSERT INTO `os_patent` VALUES (22908, 'R-Fe-B系希土類焼結磁石の製造方法', 'R-Fe-B系希土类焼结磁石の制造方法', 'JP4677942B2', '(修正有)\n\n【課題】外殻部に重希土類元素RHが濃縮された主相結晶粒をR-Fe-B系希土類焼結磁石体の内部にも効率よく形成し、残留磁束密度の低下を抑制しつつ保磁力を向上させる。\n\n【解決手段】軽希土類元素RL(NdおよびPrの少なくとも1種)を主たる希土類元素Rとして含有する複数のR-Fe-B系希土類焼結磁石体であって、そのうちの少なくとも1つは重希土類元素RH(Dy、Ho、およびTbからなる群から選択された少なくとも1種)を含有する複数のR-Fe-B系希土類焼結磁石体を用意する。次に、これらの希土類焼結磁石体のうちの重希土類元素RHの濃度が異なる2つの焼結磁石体を接触させた状態で処理室内に配置する。希土類焼結磁石体を加熱することにより、重希土類元素RHの濃度が相対的に高いR-Fe-B系希土類焼結磁石体から重希土類元素RHの濃度が相対的に低いR-Fe-B系希土類焼結磁石体に重希土類元素RHを拡散させる。\n\n【選択図】図1', '(纠正)\n\n本发明的一个目的是有效地形成一个主相晶颗粒,其中重稀土元素RH浓缩在外壳部分中,在R-Fe-B的射线烧结磁体内有效地形成,并抑制减少在残留磁通密度。提高磁力。\n\n溶液:多个基于R-Fe-B基随机烧结烧结烧结烧结烧结磁体,其含有成种稀土元素R1(Nd和Pr)作为主要稀土元素R,其中至少一个R-Fe-基于B的稀土烧结烧结磁铁,其含有选自组分RH(Dy,HO和TB)的至少一种。接下来,这些稀土烧结磁体在处理室中布置在处理室中,其中具有不同浓度的重型恢复元件RH的两个烧结磁体RH彼此接触。通过加热稀土烧结磁体,重稀土元素RH相对高的R-Fe-B基ROO烧结磁体的浓度是相对低的R-Fe-B,其相对较低。重稀土元素RH散开稀土烧结磁体。\n\n图1', 'JP2006098671', 1143734400, 'JP4677942B2', 1303833600, 1192636800, NULL, 1297267200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '山田 正文', NULL, NULL, NULL, NULL, 1, '\\20220510\\322041c362d6410895056c79eeaf7ffc.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39183, 39185, 39184, 2);
INSERT INTO `os_patent` VALUES (22909, 'ワイヤソー装置およびそれを用いた切断方法', '线锯装置和使用该装置的切割方法', 'JP4910457B2', '【課題】切削屑の排出効率が改善されたワイヤソー装置および切断方法を提供する。\n\n【解決手段】本発明のワイヤソー装置は、1本の固定砥粒ワイヤソー1と、ワイヤソーを第1走行線L12に沿って走行させる少なくとも2つのローラを含む第1ローラセット12と、ワイヤソーを第2走行線L14に沿って走行させる少なくとも2つのローラを含む第2ローラセット14と、第1走行線および第2走行線に沿って走行するワイヤソーに対してワークピースを所定の方向に相対的に移動させる機構とを備える。第1走行線と第2走行線とは所定の方向において所定の間隔で互いに平行に形成される。\n\n【選択図】図1', '本发明的一个目的是提供一种线锯装置和具有改进的切割乳房放电效率的切割方法。\n\n本发明的线锯装置是包括沿第一行进线L12的一个固定磨料线锯1和线锯的第一辊组12,以及第二辊组12和线锯。工件相对于a移动第二滚子组14上的预定方向,包括沿着行进线L14行进的至少两个辊子,第一行进线和沿第二行驶线行进的线。它包括一个机制第一行进线和第二行进线以预定方向以预定间隔彼此平行地形成。\n\n图1', 'JP2006101513', 1143993600, 'JP4910457B2', 1333468800, 1193241600, NULL, 1327593600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '阿部 利英', NULL, NULL, NULL, NULL, 1, '\\20220510\\7f656dd1675241df8edd0c12ae76448c.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, NULL, 39186, 39188, 39187, 2);
INSERT INTO `os_patent` VALUES (22910, '希土類焼結磁石とその製造方法', '稀土烧结磁体及其制造方法', 'JP4748163B2', '本発明によるR-Fe-B系希土類焼結磁石の製造方法では、まず、軽希土類元素RL(NdおよびPrの少なくとも1種)を主たる希土類元素Rとして含有するR2Fe14B型化合物結晶粒を主相として有するR-Fe-B系焼結磁石を用意する。\n\n次に、燒結磁石体の表面にRH(但し、RHは、Dy、Ho、Tbから選ばれる希土類元素の1種又は2種以上)と、RHMとなり融点を下げる金属M(但し、MはAl、Cu、Co、Fe、Agから選ばれる金属元素の1種または2種以上)とからなるRHM合金層を被覆する。この後、真空又はAr雰囲気中で500℃以上1000℃以下の熱処理を行い、表面から金属元素Mを焼結磁石の内部に拡散させ、また、表面から重希土類元素RHを希土類焼結磁石体の内部に拡散させる。', '在根据本发明的制造R-Fe-B射线​​烧结磁体的方法中,首先是含有至少一个迷你稀土元素R1的R2FE14B型化合物晶粒的主阶段(至少一种ND和PR)作为主要稀土元素R.制备R-Fe-B型烧结磁体。\n\n接下来,RH(其中Rh为1或更多)到烧结磁石,RHM和金属M的表面,以降低熔点,M(M是Al,M由金属中的一种或多种组成的RHM合金层从Cu,Co,Fe和Ag中选择的元素是覆盖的。此后,在真空或AR气氛中进行500℃或更大和1000℃或更低的热处理,并且金属元素M从表面扩散到烧结磁体中,重稀有地球元素RH是稀土烧结磁铁。将其漫射在内部。', 'JP2007528122', 1144944000, 'JP4748163B2', 1313510400, 1228924800, NULL, 1306425600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 2, 0, 0, 0, NULL, NULL, NULL, '2005119088', 'JP', 1113494400, 11, 11, NULL, NULL, 9, 7, 5, 6, 0, NULL, NULL, NULL, '長谷川 直也', NULL, 'JP1987192566A | JP1989239901A | JP1994096928A | JP1995122414A | JP2000096102A | JP2004304038A | JP2005209932A | JP2005285860A | JP2005294558A', 'US10056177B2 | US10199145B2 | US10468165B2 | US10748684B2 | US9230733B2 | US9257227B2 | US9859055B2', NULL, 1, '\\20220510\\6ede993876e544b0b3c855fa40d39d1e.png', NULL, NULL, 1, NULL, NULL, 11, NULL, NULL, NULL, 39189, 39191, 39190, 12);
INSERT INTO `os_patent` VALUES (22911, 'Rare earth sintered magnet and process for producing the same', '稀土烧结磁铁及其制造方法', 'EP1879201B1', 'In a process of producing an R-Fe-B based rare-earth sintered magnet according to the present invention, first, an R-Fe-B based sintered magnet, including, as a main phase, R 2 Fe 14 B type compound crystal grains with a light rare-earth element RL (which is Nd and/or Pr) as a main rare-earth element R, is provided. Next, the surface of the sintered magnet body is coated with an RHM alloy layer including RH (which is at least one rare-earth element selected from Dy, Ho and Tb) and a metal M (which is at least one metallic element selected from Al, Cu, Co, Fe and Ag). Thereafter, a heat treatment is conducted at 500 °C to 1,000 °C within a vacuum or an Ar atmosphere, thereby diffusing the metallic element M and the heavy rare-earth element RH inward from the surface of the rare-earth sintered magnet body.', '在本发明的R-Fe-B系稀土烧结磁体的制造方法中，首先，以R 2 Fe 14 B型复合晶体为主要相的R-Fe-B系烧结磁体。提供具有轻稀土元素RL（Nd和/或Pr）作为主要稀土元素R的晶粒。接下来，在烧结磁体的表面上涂覆RHM合金层，该RHM合金层包括RH（其为选自Dy，Ho和Tb中的至少一种稀土元素）和金属M（其为选自以下的至少一种金属元素）： Al，Cu，Co，Fe和Ag）。之后，在真空或Ar气氛中在500℃至1000℃下进行热处理，从而使金属元素M和重稀土元素RH从稀土烧结磁体的表面向内扩散。', 'EP2006731892', 1144944000, 'EP1879201B1', 1480435200, 1200412800, NULL, 1480435200, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 20, 2, 0, 0, 0, NULL, NULL, NULL, '2005119088', 'JP', 1113494400, 11, 11, NULL, NULL, 7, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, 'JP1987074048A | JP1987192566A | JP1995122414A | JP1999017303A | JP2004304038A | JP2005294558A | US5383978A', NULL, NULL, 1, '\\20220510\\937e34a209f749b9b6e53b132582ff77.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, '有效:DE | 失效:FI,BE,PT,BG,DK,LT,LU,LV,FR,HU,SE,SI,MC,SK,GB,IE,EE,CH,IS,IT,GR,ES,AT,CY,CZ,PL,RO,LI,TR,NL', 39189, 39191, 39190, 12);
INSERT INTO `os_patent` VALUES (22912, 'GESINTERTER SELTENERDMAGNET UND PROZESS ZU SEINER HERSTELLUNG', '烧结稀土磁铁和生产工艺', 'DE602006051070T2', 'In a process for producing an R-Fe-B rare earth sintered magnet, first, there is prepared an R-Fe-B sintered magnet whose main phase consists of R2Fe14B compound crystal grains containing light rare earth element RL (at least one of Nd and Pr) as main rare earth element R. Subsequently, the sintered magnet body on its surface is coated with an RHM alloy layer composed of RH (wherein RH is one or two or more rare earth elements selected from among Dy, Ho and Tb) and metal M (wherein M is one or two or more metal elements selected from among Al, Cu, Co, Fe and Ag), the metal M forming RHM so as to induce a melting point lowering. Thereafter, heat treatment is carried out at 500° to 1000°C in vacuum or Ar atmosphere so as to cause the metal element M to diffuse from the surface into the internal portion of the sintered magnet and to cause the heavy rare earth element RH to diffuse from the surface into the internal portion of the rare earth sintered magnet body.', '在制备R-Fe-B稀土烧结磁体的方法中，首先制备R-Fe-B烧结磁体，其主相由含有轻稀土元素RL（至少一种Nd）的R2Fe14B化合物晶粒组成。随后，在其表面上的烧结磁体体涂覆有由RH组成的RHM合金层（其中RH是选自Dy，Ho和Tb中的一种或两种或更多种稀土元素）和（Pr）作为主要稀土元素R.金属M和金属M（其中M是选自Al，Cu，Co，Fe和Ag中的一种或两种或多种金属元素），金属M形成RHM以引起熔点降低。之后，在真空或Ar气氛中在500℃至1000℃下进行热处理，以使金属元素M从表面扩散到烧结磁体的内部并使重稀土元素RH变为从表面扩散到稀土烧结磁体的内部。', 'DE602006051070', 1144944000, 'DE602006051070T2', 1480435200, 1480435200, NULL, 1480435200, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 29, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 39192, 39191, 39193, 12);
INSERT INTO `os_patent` VALUES (22913, 'R-Fe-B系希土類焼結磁石の製造方法', 'R-Fe-B系希土类焼结磁石の制造方法', 'JP4765747B2', '【課題】外殻部にDyが濃縮された主相結晶粒をR-Fe-B系希土類焼結磁石体の内部にも効率よく形成し、残留磁束密度の低下を抑制しつつ保磁力を向上させる。\n\n【解決手段】本発明によるR-Fe-B系希土類焼結磁石の製造方法では、軽希土類元素RL(NdおよびPrの少なくとも1種)を主たる希土類元素Rとして含有するR2Fe14B型化合物結晶粒を主相として有する少なくとも1つのR-Fe-B系希土類焼結磁石体を用意する。次に、有機溶媒およびDyイオンを含むめっき液中で電解めっきを行うことにより、R-Fe-B系希土類焼結磁石体の表面にDyを電析させる。その後、Dyが表面に電析したR-Fe-B系希土類焼結磁石体を加熱することにより、R-Fe-B系希土類焼結磁石体の内部にDyを拡散させる。\n\n【選択図】図1', '本发明的目的是有效地形成主相晶颗粒,其中μd浓缩到外壳部分中,在R-Fe-B基随机烧结磁体内有效地形成,并在抑制减少时改善矫顽力残留的磁通密度。让它。\n\n在制造根据本发明的R-Fe-B基稀土烧结磁体的方法中,R1(Nd和Pr中的至少一个)包括作为主要稀土元素R.2Fe.14B型化合物晶粒由具有主阶段的至少一种基于R-Fe-B的无规烧结磁体制备。接下来,通过在含有有机溶剂和Dy离子的电镀溶液中进行电解镀,Dy被电沉积到R-Fe-B基稀土烧结磁体体的表面。此后,Dy通过加热在表面上电沉积的R-Fe-B基稀土烧结磁体来扩散到R-Fe-B基稀土烧结磁化器的内部。\n\n图1', 'JP2006115224', 1145376000, 'JP4765747B2', 1315324800, 1193846400, NULL, 1308844800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '長谷川 直也', NULL, NULL, NULL, NULL, 1, '\\20220510\\2884ad773ae448729b7241bb15c3524c.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39194, 39196, 39195, 2);
INSERT INTO `os_patent` VALUES (22914, 'R-Fe-B系希土類焼結磁石の製造方法', 'R-Fe-B系希土类焼结磁石の制造方法', 'JP4742966B2', '【課題】外殻部にDyが濃縮された主相結晶粒をR-Fe-B系希土類焼結磁石体の内部にも効率よく形成し、残留磁束密度の低下を抑制しつつ保磁力を向上させる。\n\n【解決手段】本発明によるR-Fe-B系希土類焼結磁石の製造方法は、R-Fe-B系希土類焼結磁石体を用意し、Dyイオンを含有する溶融塩中で電解を行うことにより、R-Fe-B系希土類焼結磁石体の表面にDyを電析させる。この後、R-Fe-B系希土類焼結磁石体を加熱することにより、R-Fe-B系希土類焼結磁石体の内部にDyを拡散させる。\n\n【選択図】図1', '本发明的目的是有效地形成主相晶颗粒,其中μd浓缩到外壳部分中,在R-Fe-B基随机烧结磁体内有效地形成,并在抑制减少时改善矫顽力残留的磁通密度。让它。\n\n根据本发明的制造R-Fe-B基稀土烧结磁体的方法制备R-Fe-B基稀土烧结磁体,并在含有Dy离子的熔融盐中进行电解。Dy电沉积在R-Fe-B基稀土烧结磁体的表面上。此后,将R-Fe-B的射线烧结磁体加热以在R-Fe-B基稀土烧结磁体内的漫射。\n\n图1', 'JP2006115225', 1145376000, 'JP4742966B2', 1312905600, 1193846400, NULL, 1305820800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '長谷川 直也', NULL, NULL, NULL, NULL, 1, '\\20220510\\b275b2a277864f8e9f00ac78dd9b77bb.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39197, 39199, 39198, 2);
INSERT INTO `os_patent` VALUES (22915, 'R-Fe-B系希土類焼結磁石およびその製造方法', 'R-Fe-B系稀土烧结磁铁及其制造方法', 'JP4811143B2', '【課題】外殻部に重希土類元素RHが濃縮された主相結晶粒をR-Fe-B系希土類焼結磁石体の内部にも効率よく形成し、残留磁束密度の低下を抑制しつつ保磁力を向上させる。また、耐食性を高める。\n\n【解決手段】R-Fe-B系希土類焼結磁石は、軽希土類元素RL(NdおよびPrの少なくとも1種)を主たる希土類元素Rとして含有するR2Fe14B型化合物結晶粒を主相として有するR-Fe-B系希土類焼結磁石体と、前記R-Fe-B系希土類焼結磁石体の表面に形成された保護層とを備える。R-Fe-B系希土類焼結磁石体は、重希土類元素RH(Dy、HoおよびTbからなる群から選択された少なくとも1種)を含有し、保護層は、軽希土類元素RLを含有し、厚さが0.5μm以上の部分を有している。\n\n【選択図】図1', '本发明的一个目的是有效地形成一个主相晶颗粒,其中重稀土元素RH浓缩在外壳部分中,在R-Fe-B的射线烧结磁体内有效地形成,并抑制减少在残留磁通密度。提高磁力。此外,耐腐蚀性增强。\n\n基于R-Fe-B的稀土烧结磁铁包括大地元素R1(Nd和Pr中的至少一个),作为主要稀土元素R.2Fe.14一种基于R-Fe-B的稀土烧结磁体,其具有B型化合物晶粒作为主相,以及在R-Fe-B基射线烧结磁体的表面上形成的保护层。R-Fe-B基稀土烧结磁体含有重稀土元素RH(选自Dy,HO和Tb的至少一种,并且保护层含有轻稀土元素R1,厚度具有0.5μm或更大的一部分。\n\n图1', 'JP2006159960', 1149696000, 'JP4811143B2', 1320768000, 1198080000, NULL, 1314892800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 24, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '山田 倍司', NULL, NULL, NULL, NULL, 1, '\\20220510\\622e52ff0cbd43438c8b591797c35dcf.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39200, 39202, 39201, 5);
INSERT INTO `os_patent` VALUES (22916, 'Rare earth sintered magnet and method for production thereof', '稀土烧结磁铁及其制造方法', 'US9551052B2', 'A rare-earth sintered magnet includes 12.0 at % to 15.0 at % of rare-earth element(s), which is at least one element selected from the group consisting of Nd, Pr, Gd, Tb, Dy and Ho and at least 50% of which is Nd and/or Pr; 5.5 at % to 8.5 at % of boron (B); a predetermined percentage of additive metal A; and iron (Fe) and inevitably contained impurities as the balance. The predetermined percentage of additive metal A includes at least one of 0.005 at % to 0.30 at % of silver (Ag), 0.005 at % to 0.40 at % of nickel (Ni), and 0.005 at % to 0.20 at % of gold (Au).', '稀土烧结磁体含有12.0原子％〜15.0原子％的选自Nd，Pr，Gd，Tb，Dy和Ho中的至少一种元素的稀土元素和至少50原子％％的Nd和/或Pr;5.5原子％〜8.5原子％的硼（B）;预定百分比的添加金属A;和铁（Fe）和不可避免地含有的杂质。添加金属A的规定比例含有银（Ag）0.005原子％〜0.30原子％，镍（Ni）0.005原子％〜0.40原子％，金（Au）0.005原子％〜0.20原子％）。', 'US11/575928', 1152806400, 'US9551052B2', 1485187200, 1235577600, NULL, 1485187200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 19, 2, 0, 0, 0, NULL, NULL, NULL, '2005324058 | 2006039274 | 2005207645 | 2005233110 | 2005349280', 'JP | JP | JP | JP | JP', 1131379200, 6, 16, NULL, NULL, 39, 0, 0, 0, 6, NULL, '869', NULL, 'LEE, REBECCA', NULL, 'JP1984089401A | JP1984132104A | JP1984204211A | JP1985032306A | JP1985138056A | JP1985184661A | JP1986034242A | JP1986221353A | JP1988241141A | JP1988241142A | JP1989220803A | JP1992133406A | JP1992217302A | JP1992293206A | JP1992343204A | JP1993062814A | JP1993074618A | JP1993205927A | JP1993234733A | JP1994084550A | JP1995272929A | JP1997270310A | JP2003017308A | JP2004277795A | JP2005294557A | JP2787580B2 | US20010023716A1 | US20060207689A1 | US4770723A | US4773950A | US4792368A | US4840684A | US4995905A | US5250206A | US5383978A | US6045751A | US6287391B1 | WO1989008318A1', NULL, 'English translation of JP 04-293206. cited by examiner | English translation of official communication issued in counterpart International Application No. PCT/JP2006/314076, mailed on Jan. 24, 2008. cited by applicant | Machine translation of JP 07-272929, 1995. cited by examiner | Official Communication for PCT Application No. PCT/JP2006/314076; mailed on Aug. 8, 2006. cited by applicant | Official Communication issued in corresponding Chinese Patent Application No. 200680000948.0, mailed on Apr. 13, 2010. cited by applicant | Official Communication issued in corresponding Japanese Patent Application No. 2005-207645, mailed on Apr. 27, 2010. cited by applicant', 1, '\\20220510\\7adb79d55268442cb9fee9725533c91a.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39203, 39144, 39143, 16);
INSERT INTO `os_patent` VALUES (22917, 'Seltenerdmetall-Sintermagnet und Verfahren zu seiner Herstellung', '稀土烧结磁体及其制造方法', 'DE112006000070T5', 'A rare earth sintered magnet which comprises 12.0 atomic % to 15.0 atomic % of a rare earth element (which is at least one element selected from the group consisting of Nd, Pr, Gd, Tb, Dy and Ho and contains Nd and/or Pr in an amount of 50 % or more), 5.5 atomic % to 8.5 atomic % of boron (B), a prescribed amount of an additive metal A, and the balanced amount of iron (Fe) and inevitable impurities. The prescribed amount of an additive metal A is at least one of 0.005 atomic % to 0.30 atomic % of silver (Ag), 0.005 atomic % to 0.40 atomic % of nickel (Ni) and 0.005 atomic % to 0.20 atomic % of gold (Au).', '一种稀土烧结磁体，其包含12.0原子％至15.0原子％的稀土元素（其为选自由Nd，Pr，Gd，Tb，Dy和Ho组成的组中的至少一种元素并且包含Nd和/或Pr含量为50％或更多，5.5原子％至8.5原子％的硼（B），规定量的添加金属A，以及平衡量的铁（Fe）和不可避免的杂质。规定量的添加金属A是0.005原子％至0.30原子％的银（Ag），0.005原子％至0.40原子％的镍（Ni）和0.005原子％至0.20原子％的金（Au）中的至少一种。 ）。', 'DE112006000070', 1152806400, 'DE112006000070T5', 1218643200, 1218643200, NULL, NULL, '德国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'T5', NULL, NULL, 27, 2, 0, 0, 0, NULL, NULL, NULL, '2005207645 | 2005233110 | 2005324058 | 2005349280 | 2006039274', 'JP | JP | JP | JP | JP', 1121356800, 6, 16, NULL, NULL, 17, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, 'JP1984089401A | JP1984132104A | JP1985032306A | JP1985138056A | JP1989220803A | JP1992217302A | JP1993205927A | JP1993234733A | JP2003017308A | JP2004277795A | JP2787580B2 | US5383978A | WO2005043558A1', NULL, NULL, 1, '\\20220510\\13d00c3acd7140398287465333965b73.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39203, 39144, 39143, 16);
INSERT INTO `os_patent` VALUES (22918, 'Method for cutting rare earth alloy, method for manufacturing rare earth magnet, and wiresaw machine', '切割稀土合金的方法,稀土磁铁制造方法,电线', 'PH12006000351B1', NULL, NULL, 'PH12006000351', 1152806400, 'PH12006000351B1', 1257350400, 1204473600, NULL, 1257350400, '菲律宾', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 63, 3, 0, 0, 0, NULL, NULL, NULL, '2000358462 | 2001318867', 'JP | JP', 974995200, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, '856', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 38, NULL, NULL, NULL, 39204, 38861, 39205, 21);
INSERT INTO `os_patent` VALUES (22919, '希土類焼結磁石及びその製造方法', '稀土烧结磁体及其制造方法', 'JP4802927B2', '【課題】AlやCuを添加された場合の保磁力と同等の保磁力を発揮しつつ、AlやCuを添加された場合よりも残留磁束密度を向上した希土類焼結磁石を提供する。\n\n【解決手段】本発明の希土類焼結磁石は、12.0原子%~15.0原子%の希土類元素R(Rは、Nd、Pr、Gd、Tb、Dy、及びHoからなる群から選択された少なくとも一種の元素であり、Nd及び/又はPrを50%以上含む)と、5.2原子%~6.0原子%の硼素(B)と、0.005原子%~0.30原子%の銀(Ag)と、0.005原子%~0.20原子%のガリウム(Ga)と、残部の鉄(Fe)及び不可避的不純物とを含有する。\n\n【選択図】図1', '要解决的问题：提供一种稀土烧结磁体，其在添加Al或Cu的情况下表现出与矫顽力相当的矫顽力，并且与添加Al或Cu的情况相比具有改善的剩余磁通密度。\n\n本发明的稀土类烧结磁铁含有12.0原子％~15.0原子％的稀土元素R（R为选自Nd，Pr，Gd，Tb，Dy和Ho中的至少一种元素）。 （B），5.2至6.0原子％的硼（B），0.005至0.30原子％的银（Ag），0.005至0.20原子％它含有原子％的镓（Ga）和余量的铁（Fe）和不可避免的杂质。\n\n点域1', 'JP2006213205', 1154620800, 'JP4802927B2', 1319558400, 1203523200, NULL, 1313683200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '長谷川 直也', NULL, NULL, NULL, NULL, 1, '\\20220510\\90e7fa7ddcbd4657b8e279db390c8fcf.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39206, 39208, 39207, 2);
INSERT INTO `os_patent` VALUES (22920, '粉末加圧焼結用容器の脱気封止方法', '粉末压力烧结容器的脱气和密封方法', 'JP4683341B2', '【課題】 信頼性の高い封止を可能とする粉末加圧焼結用容器の脱気封止方法を提供する。\n\n【解決手段】 脱気用管が配置されてなる粉末加圧焼結用容器の脱気封止方法において、該粉末加圧焼結用容器を脱気した後、脱気用管の径方向に押圧して扁平部を形成し、該扁平部上に脱気用管を横断する少なくとも1本の溶接部を形成し、次いで粉末加圧焼結用容器に対して前記溶接部と反対側の前記扁平部を溶断溶融して封止処理をする粉末加圧焼結用容器の脱気封止方法である。\n\n【選択図】 図1-e', '要解决的问题：提供一种用于粉末加压烧结的容器的脱气和密封方法，利用该方法可以获得具有高可靠性的密封。 ŽSOLUTION：在用于粉末加压烧结的容器的脱气和密封方法中，设置用于除去空气的管道;该方法如下进行，即在除去用于粉末加压烧结的容器中的空气之后，通过按压管道以在该直径方向上除去空气，在焊接部分交叉的至少一个位置处形成平坦部分。在该平坦部分上形成用于除去空气的管子，并且在上述焊接部分的反面与上述用于粉末加压烧结的容器的上述平坦部分熔化以进行切断，并进行密封处理。 Ž', 'JP2006233206', 1156867200, 'JP4683341B2', 1305648000, 1205337600, NULL, 1297958400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 7, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '浅井 雅弘', NULL, NULL, NULL, NULL, 1, '\\20220510\\64729e3f41ff4d5f8f37fbe4c3690fe3.png', NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 39209, 39211, 39210, 2);
INSERT INTO `os_patent` VALUES (22921, '希土類磁石およびその製造方法', '稀土磁铁及其制造方法', 'JP4442597B2', '【課題】希土類磁石において、添加したDyなどの重希土類元素RHを無駄なく有効に活用し、保磁力を効果的に向上させる。\n\n【解決手段】まず、R-T-Q系希土類磁石用原料合金(Rは希土類元素、Tは遷移金属元素、QはB、C、N、Al、Si、およびPからなる群から選択された少なくとも1種の元素)であって、希土類元素Rとして、NdおよびPrからなる群から選択された少なくとも1種のRLと、Dy、Tb、およびHoからなる群から選択された少なくとも1種のRHとを含有する合金の溶湯を用意する。上記合金の溶湯を急冷して、凝固合金を作製した後、この急冷凝固合金を400℃以上800℃未満の温度範囲で5分以上12時間以下保持する熱処理を行う。この熱処理でRHを粒界相から主相へ移動させることができ、保磁力が増加する。\n\n【選択図】図1', '要解决的问题：通过有效地利用添加的重稀土元素R SB（例如Dy）来有效地提高稀土磁体中的矫顽力。 ŽSOLUTION：首先，用于RTQ稀土磁体的材料合金的熔融合金（R是稀土元素，T是过渡金属元素，Q是选自B，C，N的至少一种元素） ，Al，Si和P），含有选自Nd和Pr中的至少一种元素R SB 的稀土元素R和至少一种元素R SB选自Dy Tb的H 和Ho制备。将熔融合金淬火，以产生凝固合金。之后，进行热处理，其中快速凝固的合金在400℃或更高且低于800℃的温度范围内保持不短于5分钟且不长于12小时的时间。通过热处理，元素R SB 可以从晶界相移动到主相，从而矫顽力增加。 Ž', 'JP2006257518', 1158854400, 'JP4442597B2', 1269964800, 1173888000, NULL, 1264089600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 2, 0, 0, 0, NULL, NULL, NULL, '2001189673', 'JP', 993139200, 2, 15, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '酒井 朋広', NULL, NULL, NULL, NULL, 1, '\\20220510\\70c4ed234ce0436e900d086cf60ded81.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39212, 38889, 38888, 15);
INSERT INTO `os_patent` VALUES (22922, 'Sintered R-Fe-B permanent magnet and its production method', '烧结R-Fe-B永磁体及其制造方法', 'US7645349B2', 'A sintered permanent magnet having a composition comprising, by mass, 27-33.5% of R, which is at least one of rare earth elements including Y, 0.5-2% of B, 0.002-0.15% of N, 0.25% or less of O, 0.15% or less of C, and 0.001-0.05% of P, the balance being Fe, wherein it is in the shape of a ring having an outer diameter of 10-100 mm, an inner diameter of 8-96 mm, and a height of 10-70 mm, with a plurality of magnetic poles axially extending on an outer circumferential surface. The distribution of a surface magnetic flux density B0 on magnetic poles in an axial direction of the ring magnet is in a range of 92.5% or more of the maximum of B0.', '一种烧结永磁体，其组成包含质量为27-33.5％的R，其为稀土元素中的至少一种，包括Y，0.5-2％的B，0.002-0.15％的N，0.25％或更少的O，0.15％或更少的C，和0.001-0.05％的P，余量为Fe，其中它是外径为10-100mm，内径为8-96mm的环形，高度为10-70mm，多个磁极在外圆周表面上轴向延伸。在环形磁铁的轴向上的磁极上的表面磁通密度B0的分布在B0的最大值的92.5％或更大的范围内。', 'US11/548101', 1160409600, 'US7645349B2', 1263225600, 1201104000, NULL, 1263225600, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 29, 6, 0, 0, 0, NULL, NULL, NULL, '2002294431 | 2002362391', 'JP | JP', 1034006400, 9, 17, NULL, NULL, 25, 2, 1, 2, 0, NULL, '870', NULL, 'SHEEHAN, JOHN P.', NULL, 'DE10032515A1 | JP1984163803A | JP1985027105A | JP1986042102A | JP1991171426A | JP1993182813A | JP1995057914A | JP1997027409A | JP1997028409A | JP1997275004A | JP1999214216A | US20040025975A1 | US3366995A | US4497722A | US4814139A | US4983232A | US5100485A | US5194098A | US5645651A | US6312494B1 | US6475302B2 | US6537345B1 | US6599450B1 | US7156928B2 | WO2001024202A1', 'US20110298571A1 | US9672981B2', NULL, 1, '\\20220510\\017b4517175e4c6e802098d89cf50582.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 39023, 39025, 39024, 17);
INSERT INTO `os_patent` VALUES (22923, '希土類磁石用焼結治具および希土類磁石用焼結治具の製造方法ならびに希土類磁石の製造方法', '用于稀土磁体的烧结夹具和用于制造稀土磁体的烧结夹具的方法和制造稀土磁体的方法', 'JP5114921B2', '【課題】比較的単純な構成で、かつ比較的安価で、繰り返し使用に十分に耐える希土類磁石用の焼結治具を提供する。\n\n【解決手段】本発明の希土類磁石用の焼結治具は、カーボンまたはカーボンコンポジットから形成された基体11と、基体の少なくとも1つの表面に形成された無機膜12であって、粒子12aの凝集体から構成され、気孔率が1%以上30%以下である無機膜とを有する。無機膜12は溶射法で形成されることが好ましい。\n\n【選択図】  図1', '要解决的问题：为稀土磁体提供烧结支架，其具有相对简单的结构，相对便宜并且足够耐用以便重复使用。 ŽSOLUTION：用于烧结稀土磁体的支架包括：由碳或碳复合材料形成的基板11;形成在基板的至少一个表面上的无机膜12由颗粒12a的聚集体构成，并且包含孔隙率为1％至30％的空腔。无机膜12优选用热喷涂法形成。 Ž', 'JP2006295306', 1162224000, 'JP5114921B2', 1357660800, 1210780800, NULL, 1351180800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '米田 健志', NULL, NULL, NULL, NULL, 1, '\\20220510\\b72b992477fc40f8a06512bbe353c806.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39213, 39215, 39214, 2);
INSERT INTO `os_patent` VALUES (22924, '希土類焼結磁石及びその製造方法', '稀土烧结磁体及其制造方法', 'JP4743211B2', '本発明の希土類焼結磁石は、Nd2Fe14B型結晶相を主相とし、Alが添加された希土類焼結磁石であって、Dy、Ho、およびTbを除く希土類元素およびイットリウムからなる群から選択された少なくとも1種の軽希土類LR、ならびに、Dy、Ho、およびTbからなる群から選択された少なくとも1種の重希土類HRからなる希土類元素を含有する。軽希土類LRの組成比率α1、重希土類HRの組成比率α2、およびAlの組成比率βは、25≦α1+α2≦40質量%、00.20質量%、0.04≦β/α2≦0.12の関係式を満足する。', '本发明的稀土烧结磁体选自稀土烧结磁体,其中Nd2Fe14b晶相是主相,以及稀土烧结磁体,不包括Dy,Ho和Tb,以及Yttrium至少一个成熟的地球LR,以及由至少一个选自Dy,HO和TB的重型度假村HR组成的稀土元素。光稀土LR的组成比α1和组合物比α2,以及Al的组成比β。≤40质量%,0  0.20重量%,0.04≤0.04≤。它满足β/α2≤0.12的关系表达。', 'JP2007548012', 1164816000, 'JP4743211B2', 1312905600, 1241625600, NULL, 1305820800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 3, 0, 0, 0, NULL, NULL, NULL, '2005349199', 'JP', 1133452800, 9, 9, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '長谷川 直也', NULL, 'JP1985032306A | JP1993234733A | JP2000188213A | JP2003243210A | JP2005197533A | WO2005001856A1', NULL, NULL, 1, '\\20220510\\a24fda6c28cf4a6e945d939eaeff0358.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39216, 39218, 39217, 9);
INSERT INTO `os_patent` VALUES (22925, 'Rare earth sintered magnet and method for producing same', '稀土烧结磁铁及其制造方法', 'US8182618B2', 'A sintered rare-earth magnet includes an Nd2Fe14B type crystalline phase as its main phase and Al as an additive. The magnet includes at least one light rare-earth element LR selected from the group consisting of yttrium and the rare-earth elements other than Dy, Ho and Tb, and at least one heavy rare-earth element HR selected from the group consisting of Dy, Ho and Tb. The mole fractions α1, α2 and β of the light and heavy rare-earth elements LR and HR and Al satisfy the inequalities 25≦α1+α2≦40 mass %, 0&#x3c;α2≦40 mass %, β>0.20 mass %, and 0.04≦β/α2≦0.12.', '稀土类烧结磁铁含有Nd2Fe14B型结晶相作为主相，Al作为添加剂。该磁体包括至少一种选自钇和除Dy，Ho和Tb以外的稀土元素的轻稀土元素LR，和至少一种选自Dy的重稀土元素HR。 ，何和Tb。轻稀土元素LR和重稀土元素LR的摩尔分数α1，α2和β满足不等式25≤α1+α2≤40质量％，0  0.20质量％，和0.04≦β/α2≦0.12。', 'US12/095617', 1164816000, 'US8182618B2', 1337616000, 1276704000, NULL, 1337616000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 10, 3, 0, 0, 0, NULL, NULL, NULL, '2005349199', 'JP', 1133452800, 9, 9, NULL, NULL, 16, 2, 2, 2, 6, NULL, '850', NULL, 'SHEEHAN, JOHN', NULL, 'EP1462531A2 | EP1641000A1 | JP1985077959A | JP1993047533A | JP1993074618A | JP1993234733A | JP2005197533A | US20030141951A1 | US20040020563A1 | US20040163737A1 | US20040189426A1 | US20050098238A1 | US4773950A | US4975129A | US5383978A | US6468365B1', 'US10115506B2 | US20150348685A1', 'Certified Priority Document JP 2005-349199, Dec. 2, 2005. | English translation of the official communication issued in counterpart International Application No. PCT/JP2006/324012, mailed on Jun. 12, 2008. | Kim et al., &#x201c;Microstructure of ZR Containing NDFEB&#x201d;, IEEE Transactions on Magnetics, vol. 33, No. 5, Sep. 1997, pp. 3823-3825. | Machine Translation of Japanese Patent Document 2005-179533 (Jul. 2005). | Official Communication issued in corresponding European Patent Application No. 068338151.1, mailed on Dec. 15, 2009. | Official communication issued in the International Application No. PCT/JP2006/324012, mailed on Feb. 27, 2007.', 1, '\\20220510\\22fdd484e5794024927558b04ad10eed.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39216, 39218, 39217, 9);
INSERT INTO `os_patent` VALUES (22926, '希土類磁石およびその製造方法', '稀土磁铁及其制造方法', 'JP4915349B2', '本発明の希土類磁石は、R-Fe-B系希土類磁石材料(Rは少なくとも1種類の希土類元素)から構成された磁石体と、磁石体の表面に形成された金属膜とを備えている。磁石体と金属膜との間に形成された複数の反応層を更に備えている。この複数の反応層のうちの第1反応層は、磁石体に含まれるR2Fe14B型結晶の少なくとも一部と接触し、R2Fe14B型結晶に含まれていた希土類元素を含有する。第2反応層は、第1反応層と前記金属膜との間に形成され、前記第1反応層における希土類濃度よりも低い希土類濃度を有している。', '本发明的稀土磁体包括由R-Fe-B基稀土磁体材料(R是至少一种稀土元素)组成的磁体,以及形成在磁体的表面上的金属膜。进一步提供在磁体和金属膜之间形成的多个反应层。多个反应层的第一反应层接触包含在磁体中的R2FE14B型晶体的至少一部分,并包含在R2FE14B晶体中包含的稀土元素。在第一反应层和金属膜之间形成第二反应层,并且具有比第一反应层中的稀土浓度低的稀土浓度。', 'JP2007552929', 1167062400, 'JP4915349B2', 1334073600, 1244649600, NULL, 1328198400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 1, 0, 0, 0, NULL, NULL, NULL, '2005378905', 'JP', 1135699200, 12, 12, NULL, NULL, 19, 0, 0, 0, 0, NULL, NULL, NULL, '山田 倍司', NULL, 'JP1987074048A | JP1987120002A | JP1987188745A | JP1987192566A | JP1988009908A | JP1988009919A | JP1988168009A | JP1996264310A | JP1999307328A | JP2001093715A | JP2001196209A | JP2002075716A | JP2002184615A | JP2002212602A | JP2004304038A | JP2005011973A | JP2005150572A | JP2005197280A | JP2005294558A', NULL, NULL, 1, '\\20220510\\86b52e18401946a0878d7c418b17c671.png', NULL, NULL, 1, NULL, NULL, 13, NULL, NULL, NULL, 39219, 39221, 39220, 13);
INSERT INTO `os_patent` VALUES (22927, 'Rare earth magnet and method for producing same', '稀土磁铁及其制造方法', 'EP1968080B1', 'A rare-earth magnet according to the present invention includes a magnet body made of an R-Fe-B based rare-earth magnet material (where R is at least one rare-earth element) and a metal film that has been deposited on the surface of the magnet body. The magnet further includes a plurality of reaction layers between the magnet body and the metal film. The reaction layers include: a first reaction layer, which contacts with at least some of R2Fe14B type crystals, included in the magnet body, to have gotten the rare-earth element that has been included in the R2Fe14B type crystals; and a second reaction layer, which is located between the first reaction layer and the metal film and which has a lower rare-earth element concentration than that of the first reaction layer.', '根据本发明的稀土磁体包括由基于R-Fe-B的稀土磁体材料（其中R是至少一种稀土元素）制成的磁体和沉积在该磁体上的金属膜。磁体表面。磁体还包括在磁体和金属膜之间的多个反应层。反应层包括：第一反应层，其与包含在磁体中的至少一些R2Fe14B型晶体接触，以获得包含在R2Fe14B型晶体中的稀土元素;第二反应层，位于第一反应层和金属膜之间，其稀土元素浓度低于第一反应层的稀土元素浓度。', 'EP2006843240', 1167062400, 'EP1968080B1', 1423584000, 1220976000, NULL, 1423584000, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 22, 1, 0, 0, 0, NULL, NULL, NULL, '2005378905', 'JP', 1135699200, 12, 12, NULL, NULL, 17, 0, 0, 0, 0, NULL, '858', NULL, NULL, NULL, 'JP1984064733A | JP1987074048A | JP1987120002A | JP1988009908A | JP1988009919A | JP1988168009A | JP2001093715A | JP2001196209A | JP2002025812A | JP2002212602A | JP2004304038A | JP2005011973A | JP2005197280A | JP2005294558A | US5316595A | WO2005093766A1', NULL, NULL, 1, '\\20220510\\808c5d6b7e4d40b8bbcaabf06b0a2e29.png', NULL, NULL, 1, NULL, NULL, 15, NULL, NULL, '有效:DE | 失效:FI,BE,PT,BG,DK,LT,LU,LV,FR,HU,SE,SI,MC,SK,GB,IE,EE,CH,IS,IT,GR,ES,AT,CY,CZ,PL,RO,LI,TR,NL', 39219, 39221, 39220, 13);
INSERT INTO `os_patent` VALUES (22928, 'SELTENERDMAGNET UND VERFAHREN ZU SEINER HERSTELLUNG', '稀土磁铁和生产方法', 'DE602006044469T2', 'Disclosed is a rare earth magnet comprising a magnet body, which is composed of an R-Fe-B rare earth magnet material (R represents at least one rare earth element), and a metal film formed on the surface of the magnet body. This rare earth magnet further comprises a plurality of reaction layers formed between the magnet body and the metal film. A first reaction layer among the plurality of reaction layers is in contact with at least a part of R2Fe14B crystals contained in the magnet body, and contains a rare earth element contained in the R2Fe14B crystals. A second reaction layer is formed between the first reaction layer and the metal film, and has a lower rare earth concentration than that of the first reaction layer.', '本发明公开了一种稀土磁体，其包括磁体，所述磁体由R-Fe-B稀土磁体材料（R表示至少一种稀土元素）和形成在所述磁体表面上的金属膜构成。该稀土磁体还包括在磁体和金属膜之间形成的多个反应层。多个反应层中的第一反应层与包含在磁体中的至少一部分R2Fe14B晶体接触，并含有R2Fe14B晶体中包含的稀土元素。在第一反应层和金属膜之间形成第二反应层，并且具有比第一反应层低的稀土浓度。', 'DE602006044469', 1167062400, 'DE602006044469T2', 1423584000, 1423584000, NULL, 1423584000, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 32, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 17, NULL, NULL, NULL, 39222, 39221, 39223, 13);
INSERT INTO `os_patent` VALUES (22929, 'R-Fe-B RARE-EARTH SINTERED MAGNET AND PROCESS FOR PRODUCING THE SAME', 'R-Fe-B 稀土烧结磁铁及其制造方法', 'EP1981043B1', 'First, an R-Fe-B based rare-earth sintered magnet body including, as a main phase, crystal grains of an R2Fe14B type compound that includes a light rare-earth element RL, which is at least one of Nd and Pr, as a major rare-earth element R is provided. Next, an M layer, including a metallic element M that is at least one element selected from the group consisting of Al, Ga, In, Sn, Pb, Bi, Zn and Ag, is deposited on the surface of the sintered magnet body and then an RH layer, including a heavy rare-earth element RH that is at least one element selected from the group consisting of Dy, Ho and Tb, is deposited on the M layer. Thereafter, the sintered magnet body is heated, thereby diffusing the metallic element M and the heavy rare-earth element RH from the surface of the magnet body deeper inside the magnet.', '首先，R-Fe-B系稀土类烧结磁体，其包含作为主相的R2Fe14B型化合物的晶粒，其包含作为Nd和Pr中的至少一种的轻稀土元素RL，提供主要的稀土元素R.接下来，在烧结磁体的表面上沉积包括金属元素M的M层，所述金属元素M是选自Al，Ga，In，Sn，Pb，Bi，Zn和Ag中的至少一种元素。然后，在M层上沉积RH层，其包括重稀土元素RH，其是选自Dy，Ho和Tb中的至少一种元素。之后，加热烧结磁体，从而使金属元素M和重稀土元素RH从磁体的表面更深地扩散到磁体内部。', 'EP2007706646', 1168531200, 'EP1981043B1', 1439308800, 1224000000, NULL, 1439308800, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 19, 3, 0, 0, 0, NULL, NULL, NULL, '2006022997', 'JP', 1138636800, 17, 17, NULL, NULL, 9, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, 'JP1987188745A | JP1987192566A | JP1989117303A | JP1999017303A | JP2004304038A | JP2005011973A | JP2005175138A | JP2005285859A | US5383978A', NULL, NULL, 1, '\\20220510\\d9f5a4c5dbbc459f98c0f09d4c340b55.png', NULL, NULL, 1, NULL, NULL, 13, NULL, NULL, '有效:DE,FR,GB,IT,ES,NL | 失效:FI,BE,PT,BG,DK,LT,LU,LV,HU,SE,SI,MC,SK,IE,EE,CH,IS,GR,AT,CY,CZ,PL,RO,LI,TR', 39224, 39226, 39225, 18);
INSERT INTO `os_patent` VALUES (22930, 'R-Fe-B系希土類焼結磁石およびその製造方法', 'R-Fe-B系稀土烧结磁铁及其制造方法', 'JP4831074B2', 'まず軽希土類元素RL(NdおよびPrの少なくとも1種)を主たる希土類元素Rとして含有するR2Fe14B型化合物結晶粒を主相として有するR-Fe-B系希土類焼結磁石体を用意する。次に、焼結磁石体の表面に金属元素M(MはAl、Ga、In、Sn、Pb、Bi、Zn、およびAgからなる群から選択された少なくとも1種)を含有するM層を堆積した後、重希土類元素RH(Dy、Ho、およびTbからなる群から選択された少なくとも1種)を含有するRH層をM層上に堆積する。この後、焼結磁石体を加熱し、表面から金属元素Mを焼結磁石の内部に拡散させ、また、表面から重希土類元素RHを焼結磁石体の内部に拡散させる。', '首先,具有R2FE14B型化合物晶粒的R-Fe-B型稀土烧结磁体,其作为主要稀土元素R的光稀土元素R1(Nd和Pr)中的至少一种作为主阶段。接下来,金属元素M(M是选自由Al,Ga,In,Sn,Pb,Bi,Zn和含有烧结磁体的Ag中选自Al,Ga,In,Sn,Pb,Bi,Zn的Ag,含有重的RH层稀土元素RH(Dy,HO和选自Tb中的至少一种,沉积在M层上。此后,加热烧结磁体,金属元素M从表面扩散到烧结磁体的内部,并且重稀土元素RH在烧结磁体内部扩散。', 'JP2007556806', 1168531200, 'JP4831074B2', 1323187200, 1245859200, NULL, 1317312000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 3, 0, 0, 0, NULL, NULL, NULL, '2006022997', 'JP', 1138636800, 17, 17, NULL, NULL, 10, 11, 4, 11, 0, NULL, NULL, NULL, '山田 倍司', NULL, 'JP1986281850A | JP1987188745A | JP1987192566A | JP1989117303A | JP2004304038A | JP2005011973A | JP2005285859A | JP2005294558A | WO2006100968A1 | WO2006112403A1', 'DE102015105764A1 | DE102016001717A1 | DE102016102710A1 | US10242780B2 | US10256017B2 | US10290408B2 | US10468166B2 | US9028624B2 | US9396851B2 | US9412505B2 | US9774220B2', NULL, 1, '\\20220510\\6c9d6a37f0b24e53a5646ffec0584ed2.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39224, 39226, 39225, 18);
INSERT INTO `os_patent` VALUES (22931, 'R-Fe-B RARE-EARTH SINTERED MAGNET AND PROCESS FOR PRODUCING THE SAME', 'r-fe-b稀土烧结磁体及其制造方法', 'ES2547853T3', 'An R-Fe-B rare-earth sintered magnetic object is prepared which has, as the main phase, R2Fe14B type compound crystal grains containing a light rare-earth element (RL) (at least either of Nd and Pr) as the main rare-earth element (R). Subsequently, an M layer comprising one or more metallic elements (M) (M is at least one member selected from the group consisting of Al, Ga, In, Sn, Pb, Bi, Zn, and Ag) is deposited on the surface of the sintered magnetic object. An RH layer comprising one or more heavy rare-earth elements (RH) (at least one member selected from the group consisting of Dy, Ho, and Tb) is then deposited on the M layer. Thereafter, the resultant sintered magnetic object is heated to diffuse the metallic elements (M) from the surface into inner parts of the sintered magnet and diffuse the heavy rare-earth elements (RH) from the surface into inner parts of the sintered magnet.', '制备一种R-Fe-B稀土烧结磁体,其以R2Fe14B型复合晶粒为主要相,该R2Fe14B型复合晶粒含有轻稀土元素(RL)(Nd和Pr中的至少一种)作为主要稀土元素。 土元素(R)。 随后,在金属表面上沉积包括一个或多个金属元素(M)(M为选自Al,Ga,In,Sn,Pb,Bi,Zn和Ag的至少一种)的M层。 烧结的磁性物体。 然后,将包含一种或多种重稀土元素(RH)(选自Dy,Ho和Tb的至少一种)的RH层沉积在M层上。 此后,加热所得的烧结磁性物体,以使金属元素(M)从表面扩散到烧结磁体的内部,并且将重稀土元素(RH)从表面扩散到烧结磁体的内部。', 'ES2007706646', 1168531200, 'ES2547853T3', 1444320000, 1444320000, NULL, 1444320000, '西班牙', NULL, NULL, NULL, NULL, 8, 4, NULL, NULL, NULL, NULL, 'T3', NULL, NULL, 18, 3, 0, 0, 0, NULL, NULL, NULL, '2006022997', 'JP', 1138636800, 17, 17, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\354887abff954f608d2ae9cfaad727dd.png', NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 39224, 39226, 39225, 18);
INSERT INTO `os_patent` VALUES (22932, 'R-Fe-B rare-earth sintered magnet and process for producing the same', 'R-Fe-B稀土烧结磁铁及其制造方法', 'US8038807B2', 'First, an R—Fe—B based rare-earth sintered magnet body including, as a main phase, crystal grains of an R2Fe14B type compound that includes a light rare-earth element RL, which is at least one of Nd and Pr, as a major rare-earth element R is provided. Next, an M layer, including a metallic element M that is at least one element selected from the group consisting of Al, Ga, In, Sn, Pb, Bi, Zn and Ag, is deposited on the surface of the sintered magnet body and then an RH layer, including a heavy rare-earth element RH that is at least one element selected from the group consisting of Dy, Ho and Tb, is deposited on the M layer. Thereafter, the sintered magnet body is heated, thereby diffusing the metallic element M and the heavy rare-earth element RH from the surface of the magnet body deeper inside the magnet.', '首先，R-Fe-B系稀土类烧结磁体，其包含作为主相的R2Fe14B型化合物的晶粒，所述R2Fe14B型化合物包含作为Nd和Pr中的至少一种的轻稀土元素RL，提供主要的稀土元素R.接下来，在烧结磁体的表面上沉积包括金属元素M的M层，所述金属元素M是选自Al，Ga，In，Sn，Pb，Bi，Zn和Ag中的至少一种元素。然后，在M层上沉积RH层，其包括重稀土元素RH，其是选自Dy，Ho和Tb中的至少一种元素。之后，加热烧结磁体，从而使金属元素M和重稀土元素RH从磁体的表面更深地扩散到磁体内部。', 'US12/160510', 1168531200, 'US8038807B2', 1318867200, 1284566400, NULL, 1318867200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 3, 0, 0, 0, NULL, NULL, NULL, '2006022997', 'JP', 1138636800, 17, 17, NULL, NULL, 16, 6, 2, 6, 5, NULL, '850', NULL, 'SHEENAN, JOHN', NULL, 'JP1986281850A | JP1987188745A | JP1987192566A | JP1989117303A | JP2004304038A | JP2005011973A | JP2005175138A | JP2005285859A | JP2005294558A | US20060278517A1 | US20070034299A1 | US20080257716A1 | US20090020193A1 | US5383978A | WO2006100968A1 | WO2006112403A1', 'CN107077935A | DE102013224108A1 | JP2018505540A | KR1020150033528A | US10950373B2 | US9774220B2', 'English Translation of JP 62192566, Publication date of JP 62192566 is Aug. 24, 1987 (translation previously provided in Office action mailed Sep. 30, 2010). cited by examiner . | English Translation of JP 62192566. cited by examiner . | English translation of the official communication issued in counterpart International Application No. PCT/JP2007/050304, mailed on Aug. 14, 2008. cited by other . | Official Communication issued in International Patent Application No. PCT/JP2007/050304, mailed on Apr. 17, 2007. | Official Communication issued in corresponding European Patent Application No. 07706646.2, mailed on Oct. 28, 2009. cited by other.', 1, '\\20220510\\8279cf6082e742dcb369b2cf3ecb857f.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39224, 39226, 39225, 18);
INSERT INTO `os_patent` VALUES (22933, 'R-Fe-B-SELTENERDGESINTERTER MAGNET UND HERSTELLUNGSVERFAHREN DAFÜR', 'R-Fe-B-稀土烧结磁铁和制造过程', 'DE602007042533T2', 'An R-Fe-B rare-earth sintered magnetic object is prepared which has, as the main phase, R2Fe14B type compound crystal grains containing a light rare-earth element (RL) (at least either of Nd and Pr) as the main rare-earth element (R). Subsequently, an M layer comprising one or more metallic elements (M) (M is at least one member selected from the group consisting of Al, Ga, In, Sn, Pb, Bi, Zn, and Ag) is deposited on the surface of the sintered magnetic object. An RH layer comprising one or more heavy rare-earth elements (RH) (at least one member selected from the group consisting of Dy, Ho, and Tb) is then deposited on the M layer. Thereafter, the resultant sintered magnetic object is heated to diffuse the metallic elements (M) from the surface into inner parts of the sintered magnet and diffuse the heavy rare-earth elements (RH) from the surface into inner parts of the sintered magnet.', '制备R-Fe-B稀土烧结磁性体，其具有作为主相的含有轻稀土元素（RL）（Nd和Pr中的至少任一种）作为主要稀有物的R2Fe14B型化合物晶粒。-earth element（R）。随后，在表面上沉积包含一种或多种金属元素（M）的M层（M是选自Al，Ga，In，Sn，Pb，Bi，Zn和Ag中的至少一种）。烧结磁性物体。然后将包含一种或多种重稀土元素（RH）（选自Dy，Ho和Tb中的至少一种）的RH层沉积在M层上。之后，加热所得的烧结磁性物体，使金属元素（M）从表面扩散到烧结磁体的内部，并将重稀土元素（RH）从表面扩散到烧结磁体的内部。', 'DE602007042533', 1168531200, 'DE602007042533T2', 1439308800, 1439308800, NULL, 1439308800, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 29, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39227, 39226, 39228, 18);
INSERT INTO `os_patent` VALUES (22934, '銅めっき被膜を表面に有する希土類系永久磁石の製造方法', '制造在其表面上具有镀铜膜的稀土基永磁体的方法', 'JP4033241B2', '本発明の課題は、希土類系永久磁石の表面に密着性に優れた銅めっき被膜を形成することができる、新規な電気銅めっき処理用めっき液を使用した、銅めっき被膜を表面に有する希土類系永久磁石の製造方法を提供することである。その解決手段としての本発明の銅めっき被膜を表面に有する希土類系永久磁石の製造方法は、ｐＨが９．０〜１１．５に調整され、（１）Ｃｕ２＋イオン、（２）リン原子数が２以上の有機リン酸および／またはその塩、（３）グルコン酸および／またはその塩、（４）硫酸塩および／または硝酸塩、（５）シュウ酸、酒石酸、クエン酸、マロン酸、リンゴ酸から選ばれる少なくとも１つの有機カルボン酸および／またはその塩を少なくとも含有するめっき液｛ただし（２）〜（５）の成分から銅塩は除く｝を使用して、電気銅めっき処理により、希土類系永久磁石の表面に銅めっき被膜を形成することを特徴とする。', '本发明的目的是提供一种在表面上具有铜镀膜的稀土金属，其使用新颖的电镀铜处理用电镀液，其可以在稀土金属永磁体的表面上形成具有优异粘附性的铜镀膜。提供一种制造永磁体的方法。在表面上制备具有本发明的铜镀膜的稀土金属基永磁体作为溶液的方法，将pH调节至9.0至11.5，（1）Cu2 +离子，（2）磷原子数为由两种或更多种有机磷酸和/或其盐，（3）葡萄糖酸和/或其盐，（4）硫酸盐和/或硝酸盐，（5）草酸，酒石酸，柠檬酸，丙二酸，苹果酸通过使用含有至少一种选择的有机羧酸和/或其盐（但不包括来自组分（2） - （5）的铜盐）的电镀液，基于稀土金属的永久金属在磁体的表面上形成铜镀膜。', 'JP2007535943', 1170777600, 'JP4033241B2', 1200412800, 1200412800, NULL, 1193932800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, '2006029983', 'JP', 1139241600, 6, 6, NULL, NULL, 5, 2, 1, 2, 0, NULL, NULL, NULL, '瀧口 博史', NULL, 'JP1994013218A | JP2001295091A | JP2004137533A | WO2002004714A1 | WO2006016570A1', 'US9287027B2 | WO2012111353A1', NULL, 1, '\\20220510\\ac13e7faf7c04a5999ece95965fed89c.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 39229, 39231, 39230, 8);
INSERT INTO `os_patent` VALUES (22935, 'Method for producing rare earth metal-based permanent magnet having copper plating film on surface thereof', '制造在其表面上具有镀铜膜的稀土金属基永磁体的方法', 'PH12008501804B1', 'An objective of the invention is to provide a method for producing a rare earth metal-based permanent magnet having on the surface thereof a copper plating film by using a novel plating solution for use in a copper electroplating treatment capable of forming a copper plating film having excellent adhesiveness on the surface of a rare earth metal-based permanent magnet. As a means for solving the problem, the method for producing a rare earth metal-based permanent magnet having a copper plating film on the surface thereof according to the invention is characterized in that the production method comprises forming a copper plating film on the surface of the rare earth metal-based permanent magnet by applying a copper electroplating treatment using a plating solution whose pH is adjusted to a range from 9.0 to 11.5 and containing at least: (1) Cu2+ ions, (2) an organic phosphoric acid having two or more phosphorus atoms and/or a salt thereof, (3) gluconic acid and/or a salt thereof, (4) a sulfate and/or a nitrate, and (5) at least one organic carboxylic acid selected from oxalic acid, tartaric acid, citric acid, malonic acid, and malic acid, and/or a salt thereof; provided that a copper salt is excluded from the components (2) to (5).', '本发明的目的是提供一种通过使用新型电镀溶液在其表面上具有铜电镀膜的稀土金属基永磁体的方法,其用于铜电镀处理能够形成铜电镀膜稀土金属基永磁体表面的优异粘合性。作为解决问题的方法,根据本发明的制造具有铜电镀膜的稀土金属基永磁体的方法的特征在于,制造方法包括在表面上形成铜电镀膜通过使用PH调节至9.0至11.5的电镀溶液施加铜电镀处理来稀土化金属基永磁体,其至少:(1)Cu 2 +离子,(2)具有两个或两个或多种的有机磷酸更多的磷原子和/或其盐,(3)葡萄糖酸和/或其盐,(4)硫酸盐和/或硝酸盐,(5)至少一种选自草酸,酒石酸的有机羧酸,柠檬酸,丙酸和苹果酸及其盐;只要铜盐被排除在组分(2)至(5)之外。', 'PH12008501804', 1170777600, 'PH12008501804B1', 1463328000, 1170777600, NULL, 1463328000, '菲律宾', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 23, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, '856', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\1305de42bdb94db4a1c82edd31584c67.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 39232, 39231, 39233, 8);
INSERT INTO `os_patent` VALUES (22936, 'R­Fe­B계 희토류 소결 자석 및 그 제조 방법', '基于RadFeadB的稀土烧结磁体及其制造方法', 'KR101336744B1', '본 발명에 따른 R-Fe-B계  희토류(稀土類)  소결 자석의 제조 방법에서는,  먼저 경희토류 원소(RL:light  rareearth element)(Nd 및 Pr의 적어도 1종)를 주된 희토류 원소(R:rare earth element)로 함유하는 R2Fe14B형 화합물 결정립을 주상(主相)으로 가지는 R-Fe-B계 희토류 소결 자석체를 준비한다. 이어서, 소결 자석체의 표면에 중희토류 원소(RH:heavy rare earth element)(Dy, Ho 및 Tb으로 이루어지는 군으로부터 선택된 적어도 1종)를 공급하면서 소결 자석체를 가열하여 표면으로부터 중희토류 원소(RH)를 희토류 소결 자석체의 내부로 확산시킨다.', '在制备R-Fe-B稀土烧结磁体的方法中，首先制备R-Fe-B稀土烧结磁体，其含有含有轻稀土元素RL的R2Fe14B化合物晶粒作为主相。（Nd和Pr中的至少一种）作为主要稀土元素R，然后重稀土元素RH通过在供应重稀土的同时加热烧结磁体而从其表面扩散到稀土烧结磁体中元素RH（至少一种选自Dy，Ho和Tb的物质）到烧结磁体表面。', 'KR1020077029982', 1172678400, 'KR101336744B1', 1386086400, 1225814400, NULL, 1385568000, '韩国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 44, 3, 0, 0, 0, NULL, NULL, NULL, '2006058555 | 2006204847 | 2006204848 | 2006239198 | 2006355280', 'JP | JP | JP | JP | JP', 1141315200, 32, 36, NULL, NULL, 2, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2004304038A | JP2005011973A', NULL, NULL, 1, '\\20220510\\c552695f5bdd47119619d428e5339495.png', NULL, NULL, 1, NULL, NULL, 16, NULL, NULL, NULL, 39234, 39236, 39235, 43);
INSERT INTO `os_patent` VALUES (22937, 'R—Fe—B rare earth sintered magnet and method for producing same', 'R-Fe-B稀土烧结磁体及其制造方法', 'US8206516B2', 'In a method for producing an R—Fe—B based rare-earth sintered magnet according to the present invention, first, provided is an R—Fe—B based rare-earth sintered magnet body including, as a main phase, crystal grains of an R2Fe14B type compound that includes a light rare-earth element RL, which is at least one of Nd and Pr, as a major rare-earth element R. Thereafter, the sintered magnet body is heated while a heavy rare-earth element RH, which is at least one element selected from the group consisting of Dy, Ho and Tb, is supplied to the surface of the sintered magnet body, thereby diffusing the heavy rare-earth element RH into the rare-earth sintered magnet body.', '在根据本发明的制备R-Fe-B基稀土烧结磁体的方法中，首先，提供一种R-Fe-B基稀土烧结磁体，其包括作为主相的晶粒。 R2Fe14B型化合物，其包含作为主要稀土元素R的Nd和Pr中的至少一种的轻稀土元素RL。之后，在重稀土元素RH的同时加热烧结磁体。将至少一种选自Dy，Ho和Tb的元素供给烧结磁体的表面，从而将重稀土元素RH扩散到稀土烧结磁体中。', 'US12/092286', 1172678400, 'US8206516B2', 1340640000, 1227110400, NULL, 1340640000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 42, 3, 0, 0, 0, NULL, NULL, NULL, '2006058555 | 2006204847 | 2006204848 | 2006239198 | 2006355280', 'JP | JP | JP | JP | JP', 1141315200, 32, 36, NULL, NULL, 18, 20, 5, 14, 11, NULL, '850', NULL, 'SHEEHAN, JOHN', NULL, 'EP0251871A2 | EP0994493A2 | EP1643513A1 | JP1987192566A | JP1991055332U | JP1992120238A | JP2004296973A | JP2004304038A | JP2005011973A | JP2005175138A | JP2005285859A | US20060213585A1 | US20060278517A1 | US20070034299A1 | US20080245442A1 | US20080257716A1 | US20090020193A1 | WO2006100968A1', 'CN104043834A | CN104043834B | CN112635144A | CN112635187A | DE102014103210A1 | DE112016003688T5 | US10014099B2 | US10062489B2 | US10074477B2 | US10186374B2 | US10586640B2 | US10867727B2 | US20120114844A1 | US20120229240A1 | US20170062105A1 | US20170236626A1 | US20170250019A1 | US8845821B2 | US9350203B2 | US9870862B2', 'ASM Handbook (Formerly Ninth Edition, Metals Handbook) vol. 15, Casting, p. 410-419, 1988. | Nishiuchi et al.; \"R-13 Fe-B Porous Magnet and Method for Producing the Same\"; U.S. Appl. No. 12/092,300, filed May 1, 2008. | Nishiuchi et al.; &#x201c;R-13 Fe&#x2014;B Porous Magnet and Method for Producing the Same&#x201d;; U.S. Appl. No. 12/092,300, filed May 1, 2008. | Nozawa et al.; \"R-Fe-B Microcrystalline High-Density Magnet and Process for Production Thereof\"; U.S. Appl. No. 12/254,967, filed Oct. 21, 2008. | Nozawa et al.; &#x201c;R&#x2014;Fe&#x2014;B Microcrystalline High-Density Magnet and Process for Production Thereof&#x201d;; U.S. Appl. No. 12/254,967, filed Oct. 21, 2008. | Official Communication issued in corresponding European Patent Application No. 07715105.8, mailed on Jan. 27, 2010. | Official communication issued in counterpart International Application No. PCT/JP2007/053892, mailed on Sep. 18, 2008. | Official communication issued in counterpart Japanese Application No. 2008-290899, mailed on Mar. 3, 2009. | Official communication issued in counterpart Japanese Application No. 2008-503806, mailed on Sep. 16, 2008. | Tarasov et al.: &#x201c;The Influence of an Additive Chemical Composition and Its Phase State on Magnetic Properties of Nd&#x2014;Fe&#x2014;B Type Permanent Magnets,&#x201d; Proceedings of the 15th International Workshop on Rare-Earth Magnets and their Applications; Aug. 30, 1998; vol. 1; pp. 447-451. | The Condensed Chemical Dictionary, Eight Edition, 1971, pp. 376-377.', 1, '\\20220510\\1f5cb5e204af4577b6c5e7aaf7450598.png', NULL, NULL, 1, NULL, NULL, 11, NULL, NULL, NULL, 39234, 39236, 39235, 43);
INSERT INTO `os_patent` VALUES (22938, 'Method for producing an R-Fe-B rare earth sintered magnet', '一种R-Fe-B稀土烧结磁体的制造方法', 'EP2913126B1', 'In a method for producing an R-Fe-B based rare-earth sintered magnet according to the present invention, a compact of an R-Fe-B based rare-earth magnet powder, including a light rare-earth element RL (which is at least one of Nd and Pr) as a major rare-earth element R, is arranged in a processing chamber such that the compact faces a bulk body including a heavy rare-earth element RH, which is at least one element selected from the group consisting of Dy, Ho and Tb; followed by performing a sintering process; and heating the bulk body and the R-Fe-B based rare-earth sintered magnet body in the processing chamber, thereby diffusing the heavy rare-earth element RH into the R-Fe-B based rare-earth sintered magnet body while supplying the heavy rare-earth element RH from the bulk body to the surface of the R-Fe-B based rare-earth sintered magnet body.', '在根据本发明的制造R-Fe-B基稀土烧结磁体的方法中，包含轻稀土元素RL的R-Fe-B基稀土磁体粉末的压块（其为作为主要稀土元素R的Nd和Pr中的至少一种被布置在处理室中，使得压块面向包括重稀土元素RH的块体，所述重稀土元素RH是选自组中的至少一种元素。由Dy，Ho和Tb组成;然后进行烧结过程;在处理室中加热块体和R-Fe-B基稀土烧结磁体，从而将重稀土元素RH扩散到R-Fe-B基稀土烧结磁体中，同时供给重质稀土元素RH从块体到R-Fe-B基稀土烧结磁体表面。', 'EP2015000412', 1172678400, 'EP2913126B1', 1463500800, 1441123200, NULL, 1463500800, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 21, 3, 0, 0, 0, NULL, NULL, NULL, '2006058555 | 2006204847 | 2006204848 | 2006239198 | 2006355280', 'JP | JP | JP | JP | JP', 1141315200, 32, 36, NULL, NULL, 8, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, 'EP0251871A2 | EP0994493A2 | JP1987192566A | JP2004296973A | JP2004304038A | JP2005011973A | JP2005285859A | US5383978A', NULL, NULL, 1, '\\20220510\\c185393ca85d43bfba1ce080a2a5053b.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, '有效:DE | 失效:FI,BE,PT,BG,DK,LT,LU,LV,FR,HU,SE,SI,MC,SK,GB,IE,EE,CH,MT,IS,IT,GR,ES,AT,CY,CZ,PL,RO,LI,TR,NL', 39234, 39236, 39235, 43);
INSERT INTO `os_patent` VALUES (22939, 'R-Fe-B RARE EARTH SINTERED MAGNET AND METHOD FOR PRODUCING SAME', 'R-Fe-B稀土烧结磁铁及其制造方法', 'EP1993112B1', 'In a method for producing an R-Fe-B based rare-earth sintered magnet according to the present invention, first, provided is an R-Fe-B based rare-earth sintered magnet body including, as a main phase, crystal grains of an R2Fe14B type compound that includes a light rare-earth element RL, which is at least one of Nd and Pr, as a major rare-earth element R. Thereafter, the sintered magnet body is heated while a heavy rare-earth element RH, which is at least one element selected from the group consisting of Dy, Ho and Tb, is supplied to the surface of the sintered magnet body, thereby diffusing the heavy rare-earth element RH into the rare-earth sintered magnet body.', '在根据本发明的制备R-Fe-B基稀土烧结磁体的方法中，首先，提供一种R-Fe-B基稀土烧结磁体，其包括作为主相的晶粒。R2Fe14B型化合物，其包含作为主要稀土元素R的Nd和Pr中的至少一种的轻稀土元素RL。之后，在重稀土元素RH的同时加热烧结磁体。将至少一种选自Dy，Ho和Tb的元素供给烧结磁体的表面，从而将重稀土元素RH扩散到稀土烧结磁体中。', 'EP2007715105', 1172678400, 'EP1993112B1', 1439308800, 1227024000, NULL, 1439308800, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 43, 3, 0, 0, 0, NULL, NULL, NULL, '2006058555 | 2006204847 | 2006204848 | 2006239198 | 2006355280', 'JP | JP | JP | JP | JP', 1141315200, 32, 36, NULL, NULL, 10, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, 'EP0251871A2 | EP0994493A2 | JP1987192566A | JP2004296973A | JP2004304038A | JP2005011973A | JP2005175138A | JP2005285859A | JP2006100968A | US5383978A', NULL, NULL, 1, '\\20220510\\dd1ee5dbc88a48928171a0d3dd54d5b4.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, '有效:DE,FR,GB,NL | 失效:FI,BE,PT,BG,DK,LT,LU,LV,HU,SE,SI,MC,SK,IE,EE,CH,IS,IT,GR,ES,AT,CY,CZ,PL,RO,LI,TR', 39234, 39236, 39235, 43);
INSERT INTO `os_patent` VALUES (22940, 'R-fe-b rare earth sintered magnet and method for producing same', 'R-fe-b稀土烧结磁体及其制造方法', 'MY147828A', 'IN A METHOD FOR PRODUCING AN R-FE-B BASED RARE-EARTH SINTERED MAGNET ACCORDING TO THE PRESENT INVENTION, FIRST, PROVIDED IS AN R-FE-B BASED RARE-EARTH SINTERED MAGNET BODY (2) INCLUDING, AS A MAIN PHASE, CRYSTAL GRAINS OF AN R2FE14B TYPE COMPOUND THAT INCLUDES A LIGHT RARE-EARTH ELEMENT RL, WHICH IS AT LEAST ONE OF ND AND PR, AS A MAJOR RARE-EARTH ELEMENT R. THEREAFTER, THE SINTERED MAGNET BODY (2) IS HEATED WHILE A HEAVY RARE-EARTH ELEMENT RH, WHICH IS AT LEAST ONE ELEMENT SELECTED FROM THE GROUP CONSISTING OF DY, HO AND TB, IS SUPPLIED TO THE SURFACE OF THE SINTERED MAGNET BODY (2), THEREBY DIFFUSING THE HEAVY RARE-EARTH ELEMENT RH INTO THE RARE-EARTH SINTERED MAGNET BODY (2).', '在根据本发明制造基于R-FE-B的稀土烧结磁体的方法中，首先提供的是基于R-FE-B的稀土烧结磁体（2），包括作为主要相位的， R2FE14B型化合物的晶体颗粒，包括轻质稀土元素RL，其中至少有一个ND和PR，作为主要的稀土元素R. THEREAFTER，烧结的磁体（2）在重的时候被加热稀土元素RH，至少是由DY，HO和TB组成的选自元素的一个元素，提供给烧结磁体表面（2），从而将重稀土元素RH放入稀有-EARTH烧结磁体（2）。', 'MYPI2008003361', 1172678400, 'MY147828A', 1359561600, 1188748800, NULL, 1359561600, '马来西亚', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 73, 3, 0, 0, 0, NULL, NULL, NULL, '2006058555 | 2006204847 | 2006204848 | 2006239198 | 2006355280', 'JP | JP | JP | JP | JP', 1141315200, 32, 36, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 39234, 39236, 39235, 43);
INSERT INTO `os_patent` VALUES (22941, 'R-Fe-B系希土類焼結磁石およびその製造方法', 'R-Fe-B系稀土烧结磁铁及其制造方法', 'JP4241900B2', '本発明によるR-Fe-B系希土類焼結磁石の製造方法では、まず軽希土類元素RL(NdおよびPrの少なくとも1種)を主たる希土類元素Rとして含有するR2Fe14B型化合物結晶粒を主相として有するR-Fe-B系希土類焼結磁石体を用意する。次に、焼結磁石体の表面に重希土類元素RH(Dy、Ho、およびTbからなる群から選択された少なくとも1種)を供給しつつ、焼結磁石体を加熱し、表面から重希土類元素RHを希土類焼結磁石体の内部に拡散させる。', '在根据本发明的制造R-Fe-B射线​​烧结磁体的方法中,R2FE14B型化合物晶粒,其含有光稀土元素R1(Nd和Pr中的至少一个)作为主要阶段制备相r.R-Fe-B基稀土烧结磁化器。接下来,烧结磁体从表面加热和重稀土元素,同时在烧结磁体的表面上供应选自重稀土元素RH(DY,HO和TB)的至少一种。RH在稀土烧结磁体内部扩散。', 'JP2008503806', 1172678400, 'JP4241900B2', 1237305600, 1237305600, NULL, 1231430400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 40, 3, 0, 0, 0, NULL, NULL, NULL, '2006058555 | 2006204847 | 2006204848 | 2006239198 | 2006355280', 'JP | JP | JP | JP | JP', 1141315200, 32, 36, NULL, NULL, 10, 3, 0, 1, 0, NULL, NULL, NULL, '酒井 朋広', NULL, 'JP1987192566A | JP1989117303A | JP1998064746A | JP2001077386A | JP2004296973A | JP2004304038A | JP2005011973A | JP2005175138A | JP2005285859A | WO2006100968A1', 'JP2020129959A | JP5277179B2 | KR101341344B1', NULL, 1, '\\20220510\\7f0c85055d1f42ed85054b91a64664ec.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 39234, 39236, 39235, 43);
INSERT INTO `os_patent` VALUES (22942, 'R-fe-b rare earth sintered magnet', 'R-fe-b稀土烧结磁铁', 'EP2899726B1', 'An R-Fe-B based rare-earth sintered magnet is provided which comprises, as a main phase, crystal grains of an R2Fe14B type compound that includes a light rare-earth element RL (which is at least one of Nd and Pr) as a major rare-earth element R, wherein the magnet further includes a heavy rare-earth element RH (which is at least one element selected from the group consisting of Dy, Ho and Tb and) which has been introduced from its surface by grain boundary diffusion, and wherein in a surface region of the magnet, which is defined from the surface to a depth of 100 µm, there is a difference of at least 1 at% between the concentration of the heavy rare-earth element RH at a center portion of the crystal grains of the R2Fe14B type compound and that of the heavy rare-earth element RH on a grain boundary phase of the crystal grains of the R2Fe14B type compound.', '提供一种R-Fe-B基稀土烧结磁体，其包含作为主相的包含轻稀土元素RL（其为Nd和Pr中的至少一种）的R2Fe14B型化合物的晶粒，一种主要的稀土元素R，其中所述磁体还包括重稀土元素RH（其是选自Dy，Ho和Tb中的至少一种元素），其通过晶界从其表面引入扩散，并且其中在磁体的表面区域中，其从表面限定到100μm的深度，在中心部分处的重稀土元素RH的浓度之间存在至少1at％的差异R2Fe14B型化合物的晶粒和重稀土元素RH的晶粒在R2Fe14B型化合物的晶粒的晶界相上。', 'EP2015000411', 1172678400, 'EP2899726B1', 1519142400, 1438099200, NULL, 1519142400, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 48, 3, 0, 0, 0, NULL, NULL, NULL, '2006058555 | 2006204847 | 2006204848 | 2006239198 | 2006355280', 'JP | JP | JP | JP | JP', 1141315200, 32, 36, NULL, NULL, 6, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, 'JP1987192566A | JP2004296973A | JP2004304038A | JP2005011973A | JP2005285859A | US5383978A', NULL, NULL, 1, '\\20220510\\4389a99756dc486a9330a0dd3c44c8a8.png', NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, '有效:DE,FR,GB | 失效:FI,BE,PT,BG,DK,LT,LU,LV,HU,SE,SI,MC,SK,IE,EE,CH,MT,IS,IT,GR,ES,AT,CY,CZ,PL,RO,LI,TR,NL', 39234, 39236, 39235, 43);
INSERT INTO `os_patent` VALUES (22943, 'R-fe-b rare earth sintered magnet and method for producing same', 'R-fe-b稀土烧结磁体及其制造方法', 'PH12011502269B1', 'In a method for producing an R--Fe--B based rare-earth sintered magnet according to the present invention, first, provided is an R--Fe--B based rare-earth sintered magnet body including, as a main phase, crystal grains of an R.sub.2Fe.sub.14B type compound that includes a light rare-earth element RL, which is at least one of Nd and Pr, as a major rare-earth element R. Thereafter, the sintered magnet body is heated while a heavy rare-earth element RH, which is at least one element selected from the group consisting of Dy, Ho and Tb, is supplied to the surface of the sintered magnet body, thereby diffusing the heavy rare-earth element RH into the rare-earth sintered magnet body.', '在制造根据本发明的R  -  Fe-B基于稀土烧结磁体的方法中,首先提供了一种基于R  -  Fe-B的稀土烧结磁体,包括作为主阶段,一种R2F2FE2F2的晶粒.14B型化合物,其包括光稀土元素R1,其是Nd和Pr中的至少一种,作为主要的稀土元素R.此后,烧结磁体在烧结磁体的表面供应到烧结磁体的表面的重稀土元素RH的同时加热体,其是从由Dy,Ho和Tb组成的组中选择的重质稀土元素RH,从而扩散重稀土元素RH进入稀土烧结磁体。', 'PH12011502269', 1172678400, 'PH12011502269B1', 1469376000, 1172678400, NULL, 1469376000, '菲律宾', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 103, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, '871', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\da07fa0881d74fcdb5db743dd806cd0e.png', NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 39237, 39236, 39238, 43);
INSERT INTO `os_patent` VALUES (22944, 'R-fe-b rare earth sintered magnet and method for producing the same', 'R-fe-b稀土烧结磁体及其制造方法', 'PH12008500842B1', 'In a method for producing an R--Fe--B based rare-earth sintered magnet according to the present invention, first, provided is an R--Fe--B based rare-earth sintered magnet body including, as a main phase, crystal grains of an R.sub.2Fe.sub.14B type compound that includes a light rare-earth element RL, which is at least one of Nd and Pr, as a major rare-earth element R. Thereafter, the sintered magnet body is heated while a heavy rare-earth element RH, which is at least one element selected from the group consisting of Dy, Ho and Tb, is supplied to the surface of the sintered magnet body, thereby diffusing the heavy rare-earth element RH into the rare-earth sintered magnet body.', '在制造根据本发明的R  -  Fe-B基于稀土烧结磁体的方法中,首先提供了一种基于R  -  Fe-B的稀土烧结磁体,包括作为主阶段,一种R2F2FE2F2的晶粒.14B型化合物,其包括光稀土元素R1,其是Nd和Pr中的至少一种,作为主要的稀土元素R.此后,烧结磁体在烧结磁体的表面供应到烧结磁体的表面的重稀土元素RH的同时加热体,其是从由Dy,Ho和Tb组成的组中选择的重质稀土元素RH,从而扩散重稀土元素RH进入稀土烧结磁体。', 'PH12008500842', 1172678400, 'PH12008500842B1', 1400601600, 1172678400, NULL, 1400601600, '菲律宾', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 104, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, '872', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\ee115f0769194053899249d8a0f1c0d8.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 39239, 39236, 39240, 43);
INSERT INTO `os_patent` VALUES (22945, 'R-fe-b rare earth sintered magnet', 'r-fe-b稀土烧结磁铁', 'MY181243A', 'In a method for producing an R-Fe-B based rare-earth sintered magnet according to the present invention, first, provided is an R-Fe-B based rare-earth sintered magnet body (2) including, as a main phase, crystal grains of an R2Fe14B type compound that includes a light rare-earth element RL, which is at least one of Nd and Pr, as a major rare-earth element R. Thereafter, the sintered magnet body (2) is heated while a heavy rare-earth element RH, which is at least one element selected from the group consisting of Dy, Ho and Tb, is supplied to the surface of the sintered magnet body (2), thereby diffusing the heavy rare-earth element RH into the rare- earth sintered magnet body (2). Fig. 1', '在根据本发明的R-Fe-B基稀土烧结磁体的制造方法中,首先提供一种R-Fe-B基稀土烧结磁体(2),其包括主相。 R 2 Fe 14 B型化合物的晶粒,其包含作为Nd和Pr中的至少一种的轻稀土元素RL作为主要稀土元素R。此后,加热烧结磁体(2),同时重 向烧结磁体(2)的表面供给稀土元素RH,稀土元素RH是从Dy,Ho和Tb组成的组中选择的至少一种元素,从而将重稀土元素RH扩散到稀土元素中。 -土烧结磁体(2)。 图。1', 'MYPI2013000514', 1172678400, 'MY181243A', 1608480000, 1188748800, NULL, 1608480000, '马来西亚', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 133, 3, 0, 0, 0, NULL, NULL, NULL, '2006058555 | 2006204847 | 2006204848 | 2006239198 | 2006355280', 'JP | JP | JP | JP | JP', 1141315200, 32, 36, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 39234, 39236, 39235, 43);
INSERT INTO `os_patent` VALUES (22946, 'R-FE-B-SELTENERD-SINTERMAGNET', 'R-Fe-B稀土烧结磁铁', 'DE602007054029T2', NULL, NULL, 'DE602007054029', 1172678400, 'DE602007054029T2', 1519142400, 1519142400, NULL, 1519142400, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 0, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\493c84e09b3544d59718be2549a7f1cf.png', NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 39241, 39236, 39242, 43);
INSERT INTO `os_patent` VALUES (22947, 'Verfahren zur Herstellung eines gesinterten R-Fe-B-Seltenerdmagneten', '制造烧结R-Fe-B稀土磁铁的方法', 'DE602007046407T2', NULL, NULL, 'DE602007046407', 1172678400, 'DE602007046407T2', 1463500800, 1463500800, NULL, 1463500800, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 0, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\5603997f4b254fd09cf88aae714fc7a0.png', NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 39243, 39236, 39244, 43);
INSERT INTO `os_patent` VALUES (22948, 'R-Fe-B SELTENERDGESINTERTER MAGNET UND HERSTELLUNGSVERFAHREN DAFÜR', 'R-Fe-B稀土烧结磁铁和制造过程', 'DE602007042536T2', 'In a method for producing an R-Fe-B rare earth sintered magnet, there is firstly prepared an R-Fe-B rare earth sintered magnet body which contains, as the main phase, R2Fe14B compound crystal grains containing a light rare earth element RL (at least one of Nd and Pr) as a main rare earth element R, and then a heavy rare earth element RH is diffused into the rare earth sintered magnet body from the surface thereof by heating the sintered magnet body while supplying the heavy rare earth element RH (at least one substance selected from the group consisting of Dy, Ho and Tb) to the surface of the sintered magnet body.', '在制备R-Fe-B稀土烧结磁体的方法中，首先制备R-Fe-B稀土烧结磁体，其含有含有轻稀土元素RL的R2Fe14B化合物晶粒作为主相。 （Nd和Pr中的至少一种）作为主要稀土元素R，然后重稀土元素RH通过在供应重稀土的同时加热烧结磁体而从其表面扩散到稀土烧结磁体中元素RH（选自Dy，Ho和Tb中的至少一种物质）到烧结磁体表面。', 'DE602007042536', 1172678400, 'DE602007042536T2', 1439308800, 1439308800, NULL, 1439308800, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 73, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 14, NULL, NULL, NULL, 39245, 39236, 39246, 43);
INSERT INTO `os_patent` VALUES (22949, 'R-Fe-B RARE EARTH SINTERED MAGNET AND METHOD FOR PRODUCING SAME', 'R-Fe-B稀土烧结磁体及其制造方法', 'SG144951B', 'In a method for producing an R-Fe-B rare earth sintered magnet, there is firstly prepared an R-Fe-B rare earth sintered magnet body which contains, as the main phase, R2Fe14B compound crystal grains containing a light rare earth element RL (at least one of Nd and Pr) as a main rare earth element R, and then a heavy rare earth element RH is diffused into the rare earth sintered magnet body from the surface thereof by heating the sintered magnet body while supplying the heavy rare earth element RH (at least one substance selected from the group consisting of Dy, Ho and Tb) to the surface of the sintered magnet body.', '在制备R-Fe-B稀土烧结磁体的方法中，首先制备R-Fe-B稀土烧结磁体，其含有含有轻稀土元素RL的R2Fe14B化合物晶粒作为主相。 （Nd和Pr中的至少一种）作为主要稀土元素R，然后重稀土元素RH通过在供应重稀土的同时加热烧结磁体而从其表面扩散到稀土烧结磁体中元素RH（选自Dy，Ho和Tb中的至少一种物质）到烧结磁体表面。', 'SG200802655', 1172678400, 'SG144951B', 1308067200, 1222617600, NULL, 1308067200, '新加坡', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 23, 3, 0, 0, 0, NULL, NULL, NULL, '2006058555 | 2006204847 | 2006204848 | 2006239198 | 2006355280', 'JP | JP | JP | JP | JP', 1141315200, 32, 36, NULL, NULL, 0, 0, 0, 0, 0, NULL, '873', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\04a9548633114558ae1b770175677fa5.png', NULL, NULL, 1, NULL, NULL, 14, NULL, NULL, NULL, 39234, 39236, 39235, 43);
INSERT INTO `os_patent` VALUES (22950, 'R-fe-b rare earth sintered magnet and method for producing same', 'R-fe-b稀土烧结磁体及其制造方法', 'SG170075B', 'In a method for producing an R-Fe-B based rare-earth sintered magnet according to the present invention, first, provided is an R-Fe-B based rare- earth sintered magnet body including, as a main phase, crystal grains of an R2Fe14B type compound that includes a light rare-earth element RL, which is at least one of Nd and Pr, as a major rare-earth element R. Thereafter, the sintered magnet body is heated while a heavy rare-earth element RH, which is at least one element selected from the group consisting of Dy, Ho and Tb, is supplied to the surface of the sintered magnet body, thereby diffusing the heavy rare-earth element RH into the rare-earth sintered magnet body.', '在根据本发明的制备R-Fe-B基稀土烧结磁体的方法中，首先，提供一种R-Fe-B基稀土烧结磁体，其包括作为主相的晶粒。 R2Fe14B型化合物，其包含作为主要稀土元素R的Nd和Pr中的至少一种的轻稀土元素RL。之后，在重稀土元素RH下加热烧结磁体，将至少一种选自Dy，Ho和Tb的元素供给烧结磁体的表面，从而将重稀土元素RH扩散到稀土烧结磁体中。', 'SG201101598', 1172678400, 'SG170075B', 1311868800, 1304006400, NULL, 1311868800, '新加坡', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 22, 3, 0, 0, 0, NULL, NULL, NULL, '2006058555 | 2006204847 | 2006204848 | 2006239198 | 2006355280', 'JP | JP | JP | JP | JP', 1141315200, 32, 36, NULL, NULL, 0, 0, 0, 0, 0, NULL, '873', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\e81acd662e2a47e79d22f8a6d7182995.png', NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 39234, 39236, 39235, 43);
INSERT INTO `os_patent` VALUES (22951, '焼結体を含むデコンプシャフトの製造方法およびこれを用いたデコンプシャフト', '制造包括烧结体的减压轴的方法和使用该减压轴的减压轴', 'JP5099817B2', '【課題】 焼結体を含む長尺部品の形状寸法を高い寸法精度で、かつ効率よく安価に製造する方法を提供する。\n\n【解決手段】 射出成形焼結により形成された少なくとも二つの焼結体と、少なくとも一つの棒状体とを交互に配置し、前記棒状体の端部と前記焼結体とを接合することによって長尺部品に形成する焼結体を含む長尺部品の製造方法である。また、長さ(L)と幅(B)との比(L/B)が6以上の棒状体を用いる上記の焼結体を含む長尺部品の製造方法である。\n\n【選択図】図1', '要解决的问题：提供一种有效且廉价地生产包括高精度尺寸的烧结体的长部件的方法。 ŽSOLUTION：在包括烧结体的长组件的制造方法中，通过注射成型/烧结形成的至少两个烧结体和至少一个条形体交替地布置，并且条形体的边缘部分和烧结压块连接在一起，以形成长度长的部件。或者，在包括烧结体的长长度部件的制造方法中，使用长度（L）和宽度（B），（L / B）之比≥6的棒状体。 Ž', 'JP2007068863', 1173974400, 'JP5099817B2', 1355846400, 1222876800, NULL, 1349366400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 10, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 8, 0, 0, 0, 0, NULL, NULL, NULL, '米田 健志', NULL, 'JP1983003902A | JP1995166820A | JP1995252503A | JP1995252506A | JP2001174165A | JP2002137644A | JP2004285466A | JP2006070831A', NULL, NULL, 1, '\\20220510\\88498927da8043a692703d572dbeb635.png', NULL, NULL, 2, NULL, NULL, 5, NULL, NULL, NULL, 39247, 39249, 39248, 2);
INSERT INTO `os_patent` VALUES (22952, '可動コイル型リニアモータの組立方法', '组装可动线圈型直线电动机的方法', 'JP5240543B2', '【課題】 小型かつ軽量で、組立てが容易な可動コイル形リニアモータを提供する。\n\n【解決手段】 所定方向に沿って正弦波状の磁束密度分布が現出する磁気空隙gを有する固定子と、磁気空隙内に配置され、多相コイル82を含む可動子8とを有する可動コイル型リニアモータ1において、固定子2は、強磁性材料からなるヨーク6aに固着され、可動子8の移動方向に沿って磁化方向の異なる永久磁石7a、70aが交互に配列された永久磁石部材5aと、磁気空隙gを介して対向する少なくとも一対の永久磁石部材5aを包持し、ヨークより比重の小なる金属材料からなる非磁性フレーム4とを有する分割ユニット3aを複数個備えるとともに、非磁性フレーム4は、可動子8の移動方向に沿って伸長する多相コイル82の一部が挿入される溝43を有するベース部材41と、永久磁石部材5aを支持し、ベース部材41の両側面に固定されるサイド部材42を含む。\n\n【選択図】図3', '要解决的问题：提供一种体积小，重量轻，易于组装的可动线圈式直线电机。 ŽSOLUTION：具有磁气隙g的可动线圈型线性电动机1，其中正弦波状磁通分布出现在预定方向上;在线性电动机中，定子2包括永磁体构件5a，该永磁体构件5a固定在由铁磁材料制成并具有永磁体7a，70a的磁轭6a上，并且磁体8设置在磁气隙中并且包括多相线圈82。具有不同的磁化方向并且在移动方向上交替地设置动子8;多个分开的单元3a封装至少一对永久磁铁构件5a，它们通过气隙g彼此相对，并具有由比重小于轭铁的金属材料制成的非磁性框架4。非磁性框架4包括基部构件41，基部构件41具有凹槽43，凹槽43具有沿着可动件8的运动方向延伸并插入其中的多相线圈82的一部分;侧面构件42用于支撑永磁体构件5a并固定在基座构件41的两个侧表面上', 'JP2007085566', 1175011200, 'JP5240543B2', 1373990400, 1223481600, NULL, 1365696000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 8, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 5, 1, 0, 0, 0, NULL, NULL, NULL, '高橋 祐介', NULL, 'JP1997308218A | JP2000299973A | JP2003032996A | JP2004080938A | JP2006054974A', 'KR102370251B1', NULL, 1, '\\20220510\\d82d9a99338549fda17a55362a6cb542.png', NULL, NULL, 2, NULL, NULL, 2, NULL, NULL, NULL, 39250, 39252, 39251, 2);
INSERT INTO `os_patent` VALUES (22953, '可動コイル型リニアモータの組立方法', '组装可动线圈型直线电动机的方法', 'JP5088536B2', '【課題】 固定子の組立てが容易で、小型かつ軽量な可動コイル形リニアモータを提供する。\n\n【解決手段】 固定子2は、強磁性材料からなるヨーク6a、6b、6cに可動子11の移動方向に沿って磁化方向の異なるメイン磁石7a、スペーサ磁石7bが交互に配列されて第1の磁気空隙g1を形成する第1の永久磁石部材8と、強磁性材料からなるヨーク9に第2の磁気空隙g2を介して異極性の磁極が対向するように永久磁石10a、10bが固定された第2の永久磁石部材8と、第1の永久磁石部材5a、5b、5c及び第2の永久磁石部材8を包持し、ヨークより比重の小なる金属材料からなる非磁性フレーム4とを有する分割ユニット2を複数個備えるとともに、可動子11は、第2の磁気空隙g2内に配置され単相コイル123を有し、可動子の移動方向と直交する方向にも移動可能に支持される。\n\n【選択図】図3', '要解决的问题：提供一种可动线圈型线性电动机，其定子易于组装，体积小，重量轻。解决方案：定子2设置有两个分开的单元3，每个单元具有第一磁体构件8，其中具有不同磁化方向的主磁体7a和间隔磁体7b在磁轭6a上的动子11的移动方向上交替地设置。 ，6b，6c由铁电材料制成，形成第一磁气隙g1;第二永久磁铁构件8，其中永磁铁10a，10b固定成不同的磁极，以便通过铁电材料制成的磁轭9上的第二磁气隙g2相对;和非磁性框架4，用于封装第一永磁体构件5a，5b，5c和第二永磁体构件8，并且由金属材料制成，其比重小于磁轭的比重。动子11设置在第二磁气隙g2中并且具有单相线圈123并且也在垂直于动子的移动方向的方向上可移动地支撑。 Ž', 'JP2007086684', 1175097600, 'JP5088536B2', 1354636800, 1223481600, NULL, 1348156800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 10, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '當間 庸裕', NULL, NULL, NULL, NULL, 1, '\\20220510\\ca5793a138264160acfeb27dbfa796bd.png', NULL, NULL, 2, NULL, NULL, 2, NULL, NULL, NULL, 39253, 39255, 39254, 2);
INSERT INTO `os_patent` VALUES (22954, '希土類系永久磁石の製造方法', '稀土类永久磁铁的制造方法', 'JP4241901B2', '本発明の目的は、優れた耐塩水性を発揮するMgを含むAl被膜を表面に有する希土類系永久磁石の製造方法を提供することである。その目的を達成するための本発明は、蒸着形成によるMgを含むAl被膜を表面に有する希土類系永久磁石の製造方法であって、蒸着装置の処理室内において蒸着工程終了後に160℃以上の高温にある磁石を冷却する際、磁石の温度が少なくとも60℃に達するまで10℃/分以上の冷却速度で急冷することを特徴とするものである。', '本发明的目的在于提供一种具有含有Mg的Al膜的稀土类永久磁铁的制造方法，其表现出优异的耐盐水性。为了实现上述目的，本发明是一种稀土金属基永久磁铁的制造方法，其特征在于，在表面上通过蒸镀形成含有Mg的Al膜的制造方法，其特征在于，在在沉积装置的处理室内部的气相沉积步骤完成之后将磁体从160℃或更高的高温冷却的情况下，以10℃/ min或更高的冷却速率快速冷却磁体，直到磁体的温度达到至少60℃。', 'JP2008508653', 1175184000, 'JP4241901B2', 1237305600, 1237305600, NULL, 1231430400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 2, 0, 0, 0, NULL, NULL, NULL, '2006099527', 'JP', 1143734400, 10, 10, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '田中 純一', NULL, 'JP2000150216A | JP2000232011A | JP2000282262A | JP2001335921A | JP2003059741A | JP2003100537A | JP2005191276A', NULL, NULL, 1, '\\20220510\\04210db16df54824bcd6045afc8eac3d.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, NULL, 39256, 39258, 39257, 13);
INSERT INTO `os_patent` VALUES (22955, 'Method for producing rare earth metal-based permanent magnet', '一种稀土金属基永磁体的生产方法', 'EP2003662B1', 'An objective of the present invention is to provide a method for producing a rare earth metal-based permanent magnet having an Al film containing Mg, which exhibits an excellent salt water resistance. The present invention, which is to accomplish the objective, is a method for producing a rare earth metal-based permanent magnet having formed on the surface thereof an Al film containing Mg by a vapor deposition, characterized in that the production method comprises, in the case of cooling the magnet from a high temperature of 160 °C or higher after the completion of the vapor deposition step inside the treating chamber of a deposition apparatus, rapidly cooling down the magnet at a cooling rate of 10 °C/min or higher until the temperature of the magnet reaches at least 60 °C.', '本发明的目的是提供一种制备具有含Mg的Al膜的稀土金属基永磁体的方法，该Al膜具有优异的耐盐水性。为实现该目的，本发明是一种制备稀土金属基永磁体的方法，该永磁体在其表面上通过气相沉积形成含Mg的Al膜，其特征在于，所述制备方法包括：在沉积设备的处理室内完成气相沉积步骤之后，从160℃或更高的高温冷却磁体的情况，以10℃/ min或更高的冷却速率快速冷却磁体，直到磁铁的温度至少达到60°C。', 'EP2007740533', 1175184000, 'EP2003662B1', 1443542400, 1229443200, NULL, 1443542400, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 13, 2, 0, 0, 0, NULL, NULL, NULL, '2006099527', 'JP', 1143734400, 10, 10, NULL, NULL, 12, 0, 0, 0, 0, NULL, '874', NULL, NULL, NULL, 'EP1055744A2 | EP1136587A2 | JP2000150216A | JP2000232011A | JP2000282262A | JP2001032062A | JP2001335921A | JP2003059741A | JP2003100537A | JP2005191276A | US4770723A | US4792368A', NULL, NULL, 1, '\\20220510\\80563cfd92314c9eba7edb721ec6e645.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, '有效:DE | 失效:GB', 39256, 39258, 39257, 13);
INSERT INTO `os_patent` VALUES (22956, '一体化磁石体の製造方法', '集成磁体的制造方法', 'JP5156249B2', '【課題】 高い寸法精度を有し、しかも、耐食性や接着強度に優れる一体化磁石体の簡易な製造方法を提供すること。\n\n【解決手段】 以下の工程を少なくとも含むことを特徴とする。\n\n工程(1):スルホニウム基とプロパルギル基とを持つエポキシ樹脂からなる熱硬化樹脂組成物を含み、熱硬化過程における複素粘度η*の最小値が10Pa·s以上であるカチオン電着塗料を個々の磁石片の表面に電着塗装する工程、\n\n工程(2):工程(1)で電着塗装した個々の磁石片を仮乾燥する工程、\n\n工程(3):工程(2)で仮乾燥した個々の磁石片を積層する工程、\n\n工程(4):工程(3)で積層した複数の磁石片からなる積層体を加熱することで熱硬化樹脂の熱硬化を完結させて磁石片同士を接着して一体化する工程。\n\n【選択図】図1', '要解决的问题：提供一种制造集成磁体的简单方法，具有高尺寸精度并具有优异的耐腐蚀性和粘合强度。 ŽSOLUTION：制造整体磁体的方法包括步骤（1），用于在各磁体片的表面上电沉积阳离子电沉积涂层材料，该阳离子电沉积涂层材料含有包含环氧树脂，具有锍基和炔丙基的热固性树脂组合物。在热固化过程中复数粘度η的最小值不小于10（Pa s）;步骤（2），用于临时干燥在工艺（1）中电沉积的单个磁体片;步骤（3），用于层压在步骤（2）中暂时干燥的各个磁体片;以及步骤（4）：通过加热层压板将磁体片粘合和集成在一起，包括在步骤（3）中层压的多个磁体片，以完成热固性树脂的热固化过程。 Ž', 'JP2007090870', 1175184000, 'JP5156249B2', 1362499200, 1224086400, NULL, 1355414400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 4, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 9, 0, 0, 0, 0, NULL, NULL, NULL, '高橋 祐介', NULL, 'JP1990191574A | JP1992252276A | JP2002212488A | JP2002275431A | JP2003134750A | JP2003268315A | JP2005133055A | JP2006179830A | WO2001095460A1', NULL, NULL, 1, '\\20220510\\6af4f0caf00e4a1d823169dd1bfc4ecc.png', NULL, NULL, 1, NULL, NULL, 11, NULL, NULL, NULL, 39259, 39261, 39260, 2);
INSERT INTO `os_patent` VALUES (22957, '面取り装置、面取り方法および焼結磁石', '倒角装置，倒角方法和烧结磁铁', 'JP5115004B2', '【課題】砥石の寿命を延ばすことができかつ焼結磁石の面取り面に短い研磨目を形成できる、面取り装置および面取り方法を提供する。\n\n【解決手段】面取り装置10は、焼結磁石100を保持する保持ユニット12、および円柱状に形成される砥石48を回転させる砥石ユニット14を含む。保持ユニット12は、焼結磁石100の回転軸S1が砥石48の回転軸S2に対して90°傾きかつ焼結磁石100の回転軸S1が砥石48の回転軸S2に交わらないように焼結磁石100を保持する。面取り装置10では、外周面48aの周速度が外周縁102の周速度よりも大きくなるように焼結磁石100と砥石48とをそれぞれ回転させつつ焼結磁石100を矢印A方向および矢印B方向に移動させる。面取り装置10によって面取りされた焼結磁石100aの面取り面104には、略放射状に延びる短い研磨目が形成される。\n\n【選択図】図4', '要解决的问题：提供一种倒角装置，其能够延长砂轮的寿命并在烧结磁体的倒角表面上形成短的抛光接缝和倒角方法。 ŽSOLUTION：该倒角装置10包括用于保持烧结磁体100的保持单元12和用于旋转形成为柱状的砂轮48的砂轮单元14。烧结磁体100的旋转轴线S1相对于砂轮48的旋转轴线S2倾斜90°，并且烧结磁体100的旋转轴线S1保持烧结磁体100，使得烧结磁体100的旋转轴线S1不在保持单元12上与砂轮48的旋转轴S2交叉。倒角装置10分别使烧结磁铁100和砂轮48旋转，使外周面48a的圆周速度大于外周的圆周速度。边缘102同时使烧结磁体100沿箭头A方向和箭头B方向移动。大致径向延伸的短抛光接缝形成在由倒角装置10倒角的烧结磁体100a的倒角表面104上.Ž', 'JP2007091246', 1175184000, 'JP5115004B2', 1357660800, 1224086400, NULL, 1351180800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '村上 哲', NULL, 'JP1975085894U | JP1993043752U | JP2000003890A | JP2000317789A | JP2001179580A | JP2001246537A | JP2006203184A', NULL, NULL, 1, '\\20220510\\12bbaf08982441eabf6c88a01a3b80f4.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 39262, 39264, 39263, 2);
INSERT INTO `os_patent` VALUES (22958, 'Method for producing rare earth metal-based permanent magnet', '一种稀土金属基永磁体的生产方法', 'US8641832B2', 'An objective of the present invention is to provide a method for producing a rare earth metal-based permanent magnet having an Al film containing Mg, which exhibits an excellent salt water resistance. The present invention, which is to accomplish the objective, is a method for producing a rare earth metal-based permanent magnet having formed on the surface thereof an Al film containing Mg by a vapor deposition, characterized in that the production method comprises, in the case of cooling the magnet from a high temperature of 160° C. or higher after the completion of the vapor deposition step inside the treating chamber of a deposition apparatus, rapidly cooling down the magnet at a cooling rate of 10° C./min or higher until the temperature of the magnet reaches at least 60° C.', '本发明的目的是提供一种制备具有含Mg的Al膜的稀土金属基永磁体的方法，该Al膜具有优异的耐盐水性。为实现该目的，本发明是一种制备稀土金属基永磁体的方法，该永磁体在其表面上通过气相沉积形成含Mg的Al膜，其特征在于，所述制备方法包括：在沉积设备的处理室内完成气相沉积步骤之后从160℃或更高的高温冷却磁体的情况，以10℃/ min的冷却速率快速冷却磁体或更高，直到磁铁的温度达到至少60°C。', 'US12/295372', 1175184000, 'US8641832B2', 1391443200, 1263398400, NULL, 1391443200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 9, 2, 0, 0, 0, NULL, NULL, NULL, '2006099527', 'JP', 1143734400, 10, 10, NULL, NULL, 8, 0, 0, 0, 8, NULL, '875', NULL, 'YANG, JIE', 'SU, XIAOWEI', 'EP0799900A1 | JP2001335921A | JP2003059741A | JP2003100537A | JP2005105311A | JP2005191276A | US20010036508A1 | US6861089B2', NULL, '\"China Aeronautical Materials Handbook Aluminum Alloy Magnesium Alloy Titanium Alloy,\" edited by Gongyou Xia, Standards Press of China, 1.sup.st Edition, Jul. 31, 1989, pp. 36-38 (with its English translation). cited by applicant | Chinese Office Action dated Sep. 14, 2010 (with its English translation). | Chinese Office Action dated Sep. 14, 2010 (with its English translation). cited by applicant | International Search Report for International Application No. PCT/JP2007/057097 dated Jun. 28, 2007. cited by applicant. | Machine Translation of JP 2005-191276, No Date. | Machine Translation of JP 2005-191276, No Date. cited by examiner | Machine translation of JP 2003100537 A. Apr. 2003. | Machine translation of JP 2003100537 A. Apr. 2003. cited by examiner', 1, '\\20220510\\27b54f8d38554a0983e62e3f2ae5fc06.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39256, 39258, 39257, 13);
INSERT INTO `os_patent` VALUES (22959, 'VERFAHREN ZUR HERSTELLUNG EINES SELTENERD-PERMANENTMAGNETEN AUF METALLBASIS', '在金属基地上生产稀土永磁体的方法', 'DE602007043314T2', 'Provided is a method for manufacturing a rare earth permanent magnet having on the surface an Al film, which includes Mg exhibiting excellent salt water resistance. The rare earth permanent magnet has the Al film, which is formed on the surface by deposition and includes Mg. At the time of cooling the magnet which is at a high temperature of 160°C or higher after a deposition step is completed in the processing chamber of a deposition apparatus, the magnet is rapidly cooled at a cooling speed of 10°C/min or higher until the magnet temperature reaches at least 60°C.', '本发明提供一种稀土类永久磁铁的制造方法，其表面具有Al膜，该Al膜具有耐盐水性优异的Mg。稀土永磁体具有Al膜，其通过沉积形成在表面上并包含Mg。在沉积设备的处理室中完成沉积步骤之后冷却处于160℃或更高的高温的磁体时，磁体以10℃/ min的冷却速度快速冷却或者更高，直到磁铁温度达到至少60°C。', 'DE602007043314', 1175184000, 'DE602007043314T2', 1443542400, 1443542400, NULL, 1443542400, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 23, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '855', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, NULL, 39265, 39258, 39266, 13);
INSERT INTO `os_patent` VALUES (22960, 'Method for producing rare earth metal-based permanent magnet', '生产稀土金属基永磁体的制造方法', 'PH12008502204B1', 'An objective of the present invention is to provide a method for producing a rare earth metal- based permanent magnet having an Ai film containing Mg, which exhibits an excellent salt water resistance. The present invention, which is to accomplish the objective, is a method for producing a rare earth metal-based permanent magnet having formed on the surface thereof an Al film containing Mg by a vapor deposition, characterized in that the production method comprises, in the case of cooling the magnet from a high temperature of I60°C or higher after the completion of the vapor deposition step inside the treating chamber of a deposition apparatus, rapidly cooling down the magnet at a cooling rate of 10°C/min or higher until the temperature of the magnet reaches at least 60°C.', '本发明的目的是提供一种制造具有含有Mg的Ai膜的稀土金属的永磁体,其表现出优异的盐水性。本发明是为了实现目的,是制造在其表面上形成的稀土金属基永磁体的制造方法,其含有气相沉积的含有Mg的Al膜,其特征在于,所述生产方法包括在内在沉积设备的处理室内完成气相沉积步骤之后,将磁体从I60°C的高温冷却或更高的情况,以10°C / min或更高的冷却速率快速冷却磁体直到磁铁的温度达到至少60℃。', 'PH12008502204', 1175184000, 'PH12008502204B1', 1348070400, 1175184000, NULL, 1348070400, '菲律宾', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 33, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, '856', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, NULL, 39267, 39258, 39268, 13);
INSERT INTO `os_patent` VALUES (22961, 'R-T-B系焼結磁石', 'R-T-B系焼结磁石', 'JP4103938B1', '本願発明のR-T-B系焼結磁石は、希土類元素R:12原子%以上、17原子%以下、硼素B:5.0原子%以上、8.0原子%以下、Al:0.1原子%以上、1.0原子%以下、Mn:0.02原子%以上、0.5原子%未満、遷移金属T:残部の組成を有している。希土類元素Rは、Y(イットリウム)を含む希土類元素から選択された少なくとも1種であって、NdおよびPrの少なくとも一方を含み、遷移元素TはFeを主成分とする。', '本发明的RTB的烧结磁体是稀土元素R:12原子%以上,17个原子%或更低,硼B:5.0原子%以上,8.0原子%或更低,Al:0.1原子%或更多,1.0原子%或更低,Mn 0.02原子或更多,0.5原子%小于0.5原子%,过渡金属T:具有平衡的组成。稀土元素R包括选自含有Y(钇)的稀土元素中的至少一种,并且包括Nd和Pr中的至少一个,并且过渡元件T是主要组分。', 'JP2007541538', 1178035200, 'JP4103938B1', 1213718400, 1213718400, NULL, 1207238400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 19, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 13, 13, NULL, NULL, 6, 1, 0, 0, 0, NULL, NULL, NULL, '近藤 聡', NULL, 'JP1984064733A | JP1984089401A | JP1985034005A | JP1987023960A | JP1989007503A | JP2006303436A', 'CN106158213A', NULL, 1, '\\20220510\\99e2c6b2c1674dab89517f42d798ebbb.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39269, 39271, 39270, 14);
INSERT INTO `os_patent` VALUES (22962, '발명의 명칭 Ｒ－Ｔ－Ｂ계 소결 자석', '发明名称：R-T-B烧结磁体', 'KR101378089B1', '본 발명의 R-T-B계 소결 자석은, 희토류 원소 R: 12원자% 이상 17원자% 이하, 붕소 B: 5.0원자% 이상 8.0원자%이하, Al: 0.1원자% 이상 1.0원자% 이하, Mn: 0.02원자% 이상 0.5원자% 미만, 전이 금속 T: 잔량부의 조성을 가지고 있다. 희토류 원소 R은 Y(이트륨)을 포함하는 희토류 원소로부터 선택된 적어도 1종으로서 Nd 및 Pr 중 적어도 일방을 포함하고, 전이 원소 T는 Fe을 주성분으로 한다.', '本发明的RTB系烧结磁铁是稀土元素R为12原子％以上且17原子％以下的稀土元素R，5.0原子％以上且8.0原子％以下的硼B，0.1原子以下且1.0原子％以下的Al，小于0.5原子％，和过渡金属T：平衡。稀土元素R是选自包括Y（钇）的稀土元素中的至少一种并且包含Nd和Pr中的至少一种，并且过渡元素T主要由Fe组成。', 'KR1020097023841', 1178035200, 'KR101378089B1', 1395849600, 1265904000, NULL, 1395158400, '韩国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 16, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 13, 13, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2006303436A', NULL, NULL, 1, '\\20220510\\a76089014c0e4ab88b2bba720dfa14b4.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39269, 39271, 39270, 14);
INSERT INTO `os_patent` VALUES (22963, 'R-T-B系焼結磁石', 'R-T-B系焼结磁石', 'JP4103937B1', '本願発明のR-T-B系焼結磁石は、希土類元素R:12原子%以上、17原子%以下、硼素B:5.0原子%以上、8.0原子%以下、Mn:0.02原子%以上、0.3原子%以下、遷移金属T:残部を含有する。希土類元素Rは、Y(イットリウム)を含む希土類元素から選択された少なくとも1種であって、Pr:0.2原子%以上、10原子%以下を含有し、遷移元素Tは、Feを主成分として含有する。', '本发明的RTB的烧结磁体是稀土元素R:12原子%或更多,17原子%或更低,硼B:5.0原子%以上,8.0原子%或更低,Mn:0.02原子%或更多,0.3原子%或更少,过渡金属T:含有其余部分。稀土元素R是选自含有y(钇)的稀土元素中的至少一种,含有0.2原子%或更多,10原子%或更小,并且过渡元件T含有Fe作为主要成分。做。', 'JP2007541537', 1178035200, 'JP4103937B1', 1213718400, 1213718400, NULL, 1207238400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 17, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 13, 13, NULL, NULL, 6, 2, 0, 0, 1, NULL, NULL, NULL, '近藤 聡', NULL, 'JP1984064733A | JP1984089401A | JP1985034005A | JP1987023960A | JP1989007503A | JP2006303436A', 'JP2015053517A | JP6090596B2', 'Magnetization and magnetic anisotropy of Nd2Fe14B measured  on single crystals (S.Hirosawa et.al.) J. Appl. Phys., 59(1986)873-879', 1, '\\20220510\\3be27141b5124b68b17698ba99e3c7ba.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39272, 39274, 39273, 14);
INSERT INTO `os_patent` VALUES (22964, 'R-t-b sintered magnet', 'R-t-b烧结磁铁', 'EP2077567B1', 'An R-T-B based sintered magnet according to the present invention has a composition comprising: 12 at% to 17 at% of a rare-earth element R; 5.0 at% to 8.0 at% of boron B; 0.1 at% to 1.0 at% of Al; 0.02 at% to less than 0.5 at% of Mn; and a transition metal T as the balance. The rare-earth element R is at least one element selected from the rare-earth elements, including Y (yttrium), and includes at least one of Nd and Pr. The transition element T includes Fe as its main element.', '根据本发明的R-T-B基烧结磁体具有包含：12at％至17at％的稀土元素R的组合物;硼含量为5.0原子％至8.0原子％; Al含量为0.1at％至1.0at％; Mn为0.02at％至小于0.5at％;和过渡金属T作为平衡。稀土元素R是选自稀土元素中的至少一种元素，包括Y（钇），并且包括Nd和Pr中的至少一种。过渡元素T包括Fe作为其主要元素。', 'EP2007742808', 1178035200, 'EP2077567B1', 1344355200, 1246982400, NULL, 1344355200, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 19, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 13, 13, NULL, NULL, 8, 0, 0, 0, 0, NULL, '858', NULL, NULL, NULL, 'EP1705671A2 | JP1984064733A | JP1984089401A | JP1985034005A | JP1987023960A | JP1989007503B2 | JP2006303436A | US5266128A', NULL, NULL, 1, '\\20220510\\c983c5f9cc754b8b9abba37d9da1b5ca.png', NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, '有效:DE,FR,GB,NL | 失效:FI,BE,PT,BG,DK,LT,LU,LV,HU,SE,SI,MC,SK,IE,EE,CH,MT,IS,IT,GR,ES,AT,CY,CZ,PL,RO,LI,TR', 39269, 39271, 39270, 14);
INSERT INTO `os_patent` VALUES (22965, '발명의 명칭 Ｒ－Ｔ－Ｂ계 소결 자석', '发明名称：R-T-B烧结磁体', 'KR101378090B1', '본 발명의 R-T-B계 소결 자석은, 희토류 원소 R: 12원자% 이상 17원자% 이하, 붕소 B: 5.0원자% 이상 8.0원자%이하, Mn: 0.02원자% 이상 0.3원자% 이하, 전이 금속 T: 잔량부를 함유한다. 희토류 원소 R은 Y(이트륨)을 포함하는 희토류 원소로부터 선택된 적어도 1종으로서 Pr: 0.2원자% 이상 10원자% 이하를 함유하고, 전이 원소 T는Fe을 주성분으로서 함유한다.', '本发明的RTB烧结磁体的特征在于，稀土元素R为至少12原子％且不大于17原子％，硼B为至少5.0原子％且不大于8.0原子％，Mn为至少0.02原子％且不大于0.3原子％ ＆lt;＆lt;＆lt;稀土元素R是选自包含Y（钇）的稀土元素中的至少一种，含有0.2原子％以上且10原子％以下的Pr，并且过渡元素T含有Fe作为主要成分。', 'KR1020097023842', 1178035200, 'KR101378090B1', 1395849600, 1265904000, NULL, 1395158400, '韩国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 13, 13, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2006303436A', NULL, NULL, 1, '\\20220510\\11a3b82ff3604010bbee60c73c14c05f.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39272, 39274, 39273, 14);
INSERT INTO `os_patent` VALUES (22966, 'R-T-B-SINTERMAGNET', 'R-T-B烧结磁铁', 'DE602007024573T2', 'R-T-B sintered magnet comprising 12 to 17 atom% rare earth element (R), 5.0 to 8.0 atom% boron (B), 0.1 to 1.0 atom% Al, 0.02 to less than 0.5 atom% Mn and the balance transition metal (T). The rare earth element (R) is at least one member selected from among rare earth elements including Y(yttrium), wherein at least either Nd or Pr is contained. The element of transition metal (T) is composed mainly of Fe.', 'R-T-B烧结磁体包含12至17原子％的稀土元素（R），5.0至8.0原子％的硼（B），0.1至1.0原子％的Al，0.02至小于0.5原子％的Mn和余量的过渡金属（T）。稀土元素（R）是选自包括Y（钇）的稀土元素中的至少一种，其中包含至少Nd或Pr。过渡金属（T）的元素主要由Fe组成。', 'DE602007024573', 1178035200, 'DE602007024573T2', 1344355200, 1344355200, NULL, 1344355200, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 29, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 39275, 39271, 39276, 14);
INSERT INTO `os_patent` VALUES (22967, 'R-Fe-B系多孔質磁石およびその製造方法', 'R-Fe-B系多孔磁铁及其制造方法', 'JP4873008B2', '本発明のR-Fe-B系多孔質磁石は、平均結晶粒径0.1μm以上1μm以下のNd2Fe14B型結晶相の集合組織を有し、少なくともその一部が長径1μm以上20μm以下の細孔を有する多孔質である。', '本发明的R-Fe-B基多孔磁体具有0.1μm以上且1μm或更小的平均晶粒尺寸的集体结构,并且其至少一部分具有主直径为1的孔μm以上且20μm或更小。多孔。', 'JP2008516664', 1179417600, 'JP4873008B2', 1328630400, 1254326400, NULL, 1322755200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 45, 5, 0, 0, 0, NULL, NULL, NULL, '2006139148 | 2006181944 | 2006223162 | 2006240306 | 2006324298', 'JP | JP | JP | JP | JP', 1147881600, 12, 24, NULL, NULL, 16, 1, 1, 1, 0, NULL, NULL, NULL, '山田 倍司', NULL, 'JP1989132106A | JP1990004901A | JP1990219207A | JP1991080508A | JP1991129702A | JP1992133406A | JP1992165012A | JP1992253304A | JP1993047528A | JP1994112027A | JP1994238500A | JP1997148163A | JP1997162054A | JP2000173810A | JP2001085256A | JP2002075715A', 'KR101451508B1', NULL, 1, '\\20220510\\67adf4471443467abb83aee49601343a.png', NULL, NULL, 1, NULL, NULL, 33, NULL, NULL, NULL, 39277, 39279, 39278, 26);
INSERT INTO `os_patent` VALUES (22968, 'R-Fe-B porous magnet and method for producing the same', 'R-Fe-B多孔磁铁及其制造方法', 'US8268093B2', 'An R—Fe—B based porous magnet according to the present invention has an aggregate structure of Nd2Fe14B type crystalline phases with an average grain size of 0.1 μm to 1 μm. At least a portion of the magnet is porous and has micropores with a major axis of 1 μm to 20 μm.', '根据本发明的R-Fe-B基多孔磁体具有Nd2Fe14B型晶相的聚集体结构，其平均粒径为0.1μm至1μm。至少一部分磁体是多孔的并且具有长轴为1μm至20μm的微孔。', 'US12/092300', 1179417600, 'US8268093B2', 1347897600, 1242230400, NULL, 1347897600, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 34, 5, 0, 0, 0, NULL, NULL, NULL, '2006223162 | 2006139148 | 2006240306 | 2006324298 | 2006181944', 'JP | JP | JP | JP | JP', 1155830400, 12, 24, NULL, NULL, 22, 4, 3, 3, 6, NULL, '850', NULL, 'SHEEHAN, JOHN', NULL, 'JP1990004901A | JP1990219207A | JP1991080508A | JP1991129702A | JP1992133406A | JP1992165012A | JP1993047528A | JP1994112027A | JP1994238500A | JP1996316014A | JP1997148163A | JP1997162054A | JP2000173810A | JP2001085256A | JP2002075715A | US20040241034A1 | US20050016632A1 | US20050067052A1 | US4981532A | US5110374A | US5228930A | US5395462A', 'US10269475B2 | US10515751B2 | US11120931B2 | US20170117081A1', 'English translation of the official communication issued in counterpart International Application No. PCT/JP2007/060216, mailed on Dec. 24, 2008. | Machine Translation of JP 2002-075715, Mar. 15, 2002. | Nozawa et al.; &#x201c;R-Fe-B Microcrystalline High-Density Magnet and Process for Production Thereof&#x201d;; U.S. Appl. No. 12/254,967, filed Oct. 21, 2008. | Official Communication issued in corresponding European Patent Application No. 07743651.7, mailed on Oct. 7, 2011. | Yoshimura et al. &#x201c;R-Fe-B Rare Earth Sintered Magnet and Method for Producing Same,&#x201d; U.S. Appl. No. 13/455,170, filed Apr. 25, 2012. | Yoshimura et al.; &#x201c;R-Fe-B Rare Earth Sintered Magnet and Method for Producing Same&#x201d;; U.S. Appl. No. 12/092,286, filed May 1, 2008.', 1, '\\20220510\\c1ee2805b6af4adc8789e46020296fe4.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 39277, 39279, 39278, 26);
INSERT INTO `os_patent` VALUES (22969, 'R-Fe-B系永久磁石の製造方法', 'R-Fe-B系永久磁石の制造方法', 'JP4998096B2', '【課題】磁石特性を劣化させることなく水素粉砕処理の時間·コストを短縮できるR-Fe-B系永久磁石の製造方法を提供する。\n\n【解決手段】本発明のR-Fe-B系永久磁石の製造方法は、まず、水素粉砕のための処理室内でR-Fe-B系磁石合金に水素を吸蔵させ、自己発熱によって合金の温度を上昇させる水素吸蔵工程を行う。水素吸蔵工程では、合金の温度が最高温度Tmaxに到達した後、最高温度Tmaxから100℃以上低下しないように処理室内の温度を第1処理室温度T1以上に加熱する。次に、処理室内から水素を排気し、合金を加熱することによって脱水素処理を行う脱水素工程を行う。脱水素工程では、第1処理室温度T1よりも高い第2処理室温度T2で脱水素処理を行う。\n\n【選択図】図2', '要解决的问题：提供一种R-Fe-B基永磁体的制造方法，能够缩短氢破碎处理的时间和成本，而不会降低磁体特性。\n\n本发明的R-Fe-B系永久磁铁的制造方法是R-Fe-B系永久磁铁的制造方法，其特征在于，在氢磨削处理室中，首先将氢储存在R-Fe-B系磁铁合金中，如图1所示。在氢气吸留过程中，在合金温度达到最高温度T  max 之后，控制处理室中的温度，使其不会从最高温度T  max 降低100℃或更多。加热至1个或更多个处理室温度T  1 。接下来，进行脱氢步骤，其中从处理室抽空氢，并加热合金以进行脱氢处理。在脱氢步骤中，脱氢在比第一处理室温度T  1 高的第二处理室温度T  2 下进行。\n\n.The', 'JP2007150605', 1181059200, 'JP4998096B2', 1344960000, 1229529600, NULL, 1337875200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '田中 純一', NULL, NULL, NULL, NULL, 1, '\\20220510\\1588744b15ef40ab92ee19d3304cbf27.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39280, 39282, 39281, 2);
INSERT INTO `os_patent` VALUES (22970, 'Rare earth magnet and method for production thereof', '稀土磁铁及其制造方法', 'US7867343B2', 'In a rare earth magnet, an added heavy rare earth element RH such as Dy is effectively used without any waste, so as to effectively improve the coercive force. First, a molten alloy of a material alloy for an R-T-Q rare earth magnet (R is a rare earth element, T is a transition metal element, and Q is at least one element selected from the group consisting of B, C, N, Al, Si, and P), the rare earth element R containing at least one kind of element RL selected from the group consisting of Nd and Pr and at least one kind of element RH selected from the group consisting of Dy Tb, and Ho is prepared. The molten alloy is quenched, so as to produce a solidified alloy. Thereafter, a thermal treatment in which the rapidly solidified alloy is held in a temperature range of 400° C. or higher and lower than 800° C. for a period of not shorter than 5 minutes nor longer than 12 hours is performed. By the thermal treatment, the element RH can be moved from the grain boundary phase to the main phase, so that the coercive force is increased.', '在稀土磁体中，有效地使用添加的重稀土元素RH如Dy而没有任何浪费，从而有效地提高矫顽力。首先，用于RTQ稀土磁体的材料合金的熔融合金（R是稀土元素，T是过渡金属元素，Q是选自B，C，N，Al中的至少一种元素） ，Si和P），制备含有选自Nd和Pr中的至少一种元素RL和至少一种选自Dy Tb和Ho的元素RH的稀土元素R. 。将熔融合金淬火，以产生凝固合金。之后，进行热处理，其中快速凝固的合金在400℃或更高且低于800℃的温度范围内保持不短于5分钟且不长于12小时的时间。通过热处理，元素RH可以从晶界相移动到主相，从而矫顽力增加。', 'US11/819196', 1182787200, 'US7867343B2', 1294675200, 1195056000, NULL, 1294675200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 13, 15, NULL, NULL, 28, 17, 0, 16, 1, NULL, '849', NULL, 'SHEEHAN, JOHN P', NULL, 'DE4331563A1 | EP0994493A2 | JP1985145357A | JP1986253805A | JP1990298003A | JP1991222304A | JP1993033076A | JP1994096928A | JP1994124824A | JP1996264363A | JP1997017677A | JP1998102215A | JP1998289813A | JP2001059144A | JP2001060504A | JP2001155913A | US20040020563A1 | US20050098238A1 | US20060016515A1 | US5181973A | US5383978A | US5411608A | US5634987A | US5908513A | US6322637B1 | US6403024B1 | US6491765B2 | US6511552B1', 'CN104240886A | CN104240886B | CN104240887A | CN104240887B | CN104240888A | CN104240888B | CN104249156A | CN104249156B | CN104252937A | CN104252937B | CN104252938A | CN104252938B | CN104252939A | CN104252939B | CN104252940A | CN104252940B | CN108389673A', 'German Official Communication mailed Aug. 30, 2007, in connection with German Patent Application No. 102 96 960.4-24, and an English Translation thereof. cited by other.', 1, '\\20220510\\8a89779232c84ed6917efd48e1e5b13d.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 38887, 38889, 38888, 15);
INSERT INTO `os_patent` VALUES (22971, 'Press machine and method for producing magnet', '压力机和制造磁铁的方法', 'US7604468B2', 'A press machine 10 includes a die 12 with a through hole 12a that defines a cavity, a first press surface 14a and a second press surface 16a for pressing a magnetic powder 18 loaded in the cavity, and magnetic field generating means for applying an aligning magnetic field to the magnetic powder 18 in the cavity. At least one of the first and second press surfaces 14a and 16a has a region made of a material having a Vickers hardness that is higher than 200 but equal to or lower than 450. In pressing the powder under the aligning magnetic field, the press machine 10 minimizes the disturbance in the orientation of the powder.', '压力机10包括具有通孔12a的模具12，通孔12a限定空腔，第一压制表面14a和第二压制表面16a，用于压制装载在空腔中的磁粉18，以及磁场产生装置，用于施加对准磁性磁场中的磁粉18在磁场中。第一和第二压制表面14a和16a中的至少一个具有由维氏硬度高于200但等于或低于450的材料制成的区域。在对准磁场下压制粉末时，压制机10最小化了粉末取向的干扰。', 'US11/822912', 1184083200, 'US7604468B2', 1255968000, 1195056000, NULL, 1255968000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 3, 0, 0, 0, NULL, NULL, NULL, '2001306406 | 2002206487', 'JP | JP', 1001952000, 12, 12, NULL, NULL, 35, 3, 0, 1, 0, NULL, '849', NULL, 'GUPTA, YOGENDRA', 'NGUYEN, THU KHANH T', 'EP0999039A2 | EP1020285A2 | JP1988033505A | JP1990155520A | JP1990240201A | JP1994218587A | JP1994330102A | JP1996309457A | JP1997003572A | JP1997035978A | JP1997150298A | JP1998270276A | JP1999314237A | JP2000254907A | JP2001058294A | US20040079190A1 | US20070098832A1 | US3560200A | US3869318A | US4211585A | US4573895A | US4578125A | US4601875A | US4935174A | US5250255A | US5383978A | US6299832B1 | US6332932B1 | US6371746B1 | US6413457B1 | US6432158B1 | US6599468B2 | US6656329B1 | US7037465B2 | US7094047B2', 'DE102013205101A1 | US20110044839A1 | US8376726B2', NULL, 1, '\\20220510\\0c4dbe230786482893fdbe163e61b157.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 38899, 38901, 38900, 12);
INSERT INTO `os_patent` VALUES (22972, 'Method for producing sintered NdFeB magnet', '烧结钕铁硼磁体的制造方法', 'US8420160B2', 'The present invention provides a method for producing a sintered NdFeB magnet having high coercivity and capable of being brought into applications without lowering its residual magnetic flux density or maximum energy product and without reprocessing. The method for producing a sintered NdFeB magnet according to the present invention includes applying a substance containing dysprosium (Dy) and/or terbium (Tb) to the surface of the sintered NdFeB magnet forming a base body and then heating the magnet to diffuse Dy and/or Tb through the grain boundary and thereby increase the coercivity of the magnet. This method is characterized in that: (1) the substance containing Dy or Tb to be applied to the surface of the sintered NdFeB magnet is substantially a metal powder; (2) the metal powder is composed of a rare-earth element R and an iron-group transition element T, or composed of R, T and another element X, the element X capable of forming an alloy or intermetallic compound with R and/or T; and (3) the oxygen content of the sintered NdFeB magnet forming the base body is 5000 ppm or lower. The element T may contain nickel (Ni) or cobalt (Co) to produce an anticorrosion effect.', '本发明提供一种制造烧结NdFeB磁体的方法，该烧结NdFeB磁体具有高矫顽力并且能够在不降低其剩余磁通密度或最大能量积且不进行再处理的情况下应用。根据本发明的制造烧结NdFeB磁体的方法包括将含有镝（Dy）和/或铽（Tb）的物质施加到形成基体的烧结NdFeB磁体的表面上，然后加热磁体以扩散Dy和/或Tb穿过晶界，从而提高磁体的矫顽力。该方法的特征在于：（1）待施加到烧结NdFeB磁体表面的含有Dy或Tb的物质基本上是金属粉末; （2）金属粉末由稀土元素R和铁基过渡元素T组成，或由R，T和另一元素X组成，元素X能够与R形成合金或金属间化合物和/或或T; （3）形成基体的烧结NdFeB磁体的氧含量为5000ppm或更低。元素T可含有镍（Ni）或钴（Co）以产生抗腐蚀效果。', 'US12/441124', 1185120000, 'US8420160B2', 1366041600, 1254931200, NULL, 1366041600, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 17, 1, 0, 0, 0, NULL, NULL, NULL, '2006250462', 'JP', 1158249600, 21, 21, NULL, NULL, 17, 0, 0, 0, 7, NULL, '868', NULL, 'MEEKS, TIMOTHY', 'LOUIE, MANDY', 'EP0528292A1 | EP1643513A1 | JP1987074048A | JP1989117303A | JP1993302176A | JP1995122414A | JP1995302705A | JP2004304038A | JP2007005335A | RU2055695C1 | US20040050454A1 | US20060278517A1 | US20070240789A1 | US5273782A | US6261515B1 | US7053745B2 | WO2004008683A2', NULL, 'Extended Search Report issued in corresponding European Patent Application No. 07790283.1 dated Apr. 6, 2011. cited by applicant | Fukuda et al., \"Magnetic Properties and Corrosion Characteristics of Nd-(Fe, Co, Ni)-B Pseudo-Ternary Systems\", Kawasaki Steel Technical Report, 1989, pp. 312-315, vol. 21., No. 4. cited by applicant | Hirota et al., \"Increase in Coercivity of Sintered NdFeB Magnet by Grain Boundary Diffusion Method\", Speech Summaries of 2005 Spring Meeting of Japan Society of Powder and Powder Metallurgy, 2005, p. 143. cited by applicant | Ishigaki et al., \"Surface Improvements on Magnetic Properties of Small-Sized Nd-Fe-B Sintered Magnets\", Neomax Technical Report, 2005, pp. 15-19, vol. 15. cited by applicant | Mar. 7, 2012 Chinese Office Action issued in Chinese Patent Application No. 200780034297.1. cited by applicant. | Nakamura \"Magnetic Properties of Extremely Small Nd-Fe-B Sintered Magnets\" Oct. 2005, Trans. on Magn. p. 3844-3846. cited by examiner | Park et al., \"Effect of Metal-Coating and Consecutive Heat Treatment on Coercivity of Thin Nd-Fe-B Sintered Magnets\", Proceedings of the Sixteenth International Workshop on Rare-Earth Magnets and Their Applications, 2000, pp. 257-264. cited by applicant', 1, '\\20220510\\467d2fa4a7934689ae21050f27d60a28.png', NULL, NULL, 1, NULL, NULL, 19, NULL, NULL, NULL, 39283, 39285, 39284, 22);
INSERT INTO `os_patent` VALUES (22973, 'METHOD FOR PRODUCING SINTERED NdFeB MAGNET', '烧结钕铁硼磁铁的制造方法', 'EP2071597B1', 'The present invention provides a method for producing a sintered NdFeB magnet having high coercivity and capable of being brought into applications without lowering its residual magnetic flux density or maximum energy product and without reprocessing. The method for producing a sintered NdFeB magnet according to the present invention includes applying a substance containing dysprosium (Dy) and/or terbium (Tb) to the surface of the sintered NdFeB magnet forming a base body and then heating the magnet to diffuse Dy and/or Tb through the grain boundary and thereby increase the coercivity of the magnet. This method is characterized in that: (1) the substance containing Dy or Tb to be applied to the surface of the sintered NdFeB magnet is substantially a metal powder; (2) the metal powder is composed of a rare-earth element R and an iron-group transition element T, or composed of R, T and another element X, the element X capable of forming an alloy or intermetallic compound with R and/or T; and (3) the oxygen content of the sintered NdFeB magnet forming the base body is 5000 ppm or lower. The element T may contain nickel (Ni) or cobalt (Co) to produce an anticorrosion effect.', '本发明提供一种制造烧结NdFeB磁体的方法，该烧结NdFeB磁体具有高矫顽力并且能够在不降低其剩余磁通密度或最大能量积且不进行再处理的情况下应用。根据本发明的制造烧结NdFeB磁体的方法包括将含有镝（Dy）和/或铽（Tb）的物质施加到形成基体的烧结NdFeB磁体的表面上，然后加热磁体以扩散Dy和/或Tb穿过晶界，从而提高磁体的矫顽力。该方法的特征在于：（1）待施加到烧结NdFeB磁体表面的含有Dy或Tb的物质基本上是金属粉末; （2）金属粉末由稀土元素R和铁基过渡元素T组成，或由R，T和另一元素X组成，元素X能够与R形成合金或金属间化合物和/或或T; （3）形成基体的烧结NdFeB磁体的氧含量为5000ppm或更低。元素T可含有镍（Ni）或钴（Co）以产生抗腐蚀效果。', 'EP2007790283', 1185120000, 'EP2071597B1', 1482854400, 1245168000, NULL, 1482854400, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 20, 1, 0, 0, 0, NULL, NULL, NULL, '2006250462', 'JP', 1158249600, 21, 21, NULL, NULL, 10, 2, 2, 2, 8, NULL, '876', NULL, NULL, NULL, 'EP1643513A1 | JP1987074048A | JP1989117303A | JP1993302176A | JP1995302705A | JP2004304038A | JP2004359873A | JP2007053351A', 'CN108538561A | CN108538561B', 'Effect of Metal-Coating and Consecutive Heat Treatment on Coercivity of Thin Sintered NdFeB Magnets | K. T. PARK et al.,Effect of Metal-Coating and Consecutive Heat Treatment on Coercivity of Thin Sintered NdFeB Magnets,Proceedings of the Sixteenth International Workshop on Rare-Earth Magnets and their Applications,257-264 | KEN-ICHI MACHIDA et al.,Ryuukai Kaishitsu Gata Nd-Fe-B Kei Shouketsu Jishaku No Jiki Tokusei,Japan Society of Powder and Powder Metallurgy | KOUICHI HIROTA et al.,Ryuukai Kakusan Hou Ni Yoru Nd-Fe-B Kei Shouketsu Jishaku No Kou-hojiryoku-ka,Japan Society of Powder and Powder Metallurgy | Magnetic Properties and Corrosion Characteristics of Nd-(Fe,Co,Ni)-B Pseudo-Ternary Systems,YASUTAKA FUKUDA et al.,KAWASAKI STEEL GIHO,Kawasaki Steel Corporation,19890000,VOL.21,312 | Neojimu Kei Bishou Shouketsu Jishaku No Hyoumen Kaishitsu To Tokusei Koujou (Surface Modification and Characteristics Improvement of Micro-sized Neodymium Sintered Magnet),NAOYUKI ISHIGAKI et al.,NEOMAX GIHOU,20050000,VOL.15,15 | Ryuukai Kaishitsu Gata Nd-Fe-B Kei Shouketsu Jishaku No Jiki Tokusei,KEN-ICHI MACHIDA et al.,Funtai Funmatsu Yakin Kyoukai Heisei 17 Nen Shunki Taikai Kouen Gaiyoushuu,Japan Society of Powder and Powder Metallurgy,144 | Ryuukai Kakusan Hou Ni Yoru Nd-Fe-B Kei Shouketsu Jishaku No Kou-hojiryoku-ka,KOUICHI HIROTA et al.,Funtai Funmatsu Yakin Kyoukai Heisei 17 Nen Shunki Taikai Kouen Gaiyoushuu,Japan Society of Powder and Powder Metallurgy,143', 1, '\\20220510\\d088cf1d12d049d8a07e403ed6d37fcc.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, '有效:DE | 失效:FI,BE,PT,BG,DK,LT,LU,LV,FR,HU,SE,SI,MC,SK,GB,IE,EE,CH,MT,IS,IT,GR,ES,AT,CY,CZ,PL,RO,LI,TR,NL', 39283, 39285, 39284, 22);
INSERT INTO `os_patent` VALUES (22974, 'NdFeB焼結磁石の製造方法', 'NdFeB烧结磁体的制造方法', 'JP5226520B2', '本発明の課題は、高い保磁力を有すると共に、残留磁束密度や最大エネルギー積を低下させず、再加工することなく応用に供しうるNdFeB焼結磁石の製造方法を提供することにある。本発明に係るNdFeB焼結磁石の製造方法は、NdFeB焼結磁石の表面にDy及び/又はTbを含む付着物を付着させて加熱し、DyまたはTbをNdFeB焼結磁石の粒界を通じて、その内部に拡散させて高保磁力化を行う磁石製造方法において、(1) NdFeB焼結磁石の表面に付着させるDyまたはTbを含む物質を実質的に金属粉末とするとすると共に、(2) 前記金属粉末が希土類元素Rと鉄族遷移元素Tから、あるいはRとT及びRあるいはTと合金あるいは金属間化合物を形成する元素Xからなり、(3) NdFeB焼結磁石中に含まれる酸素量が5000ppm以下であることを特徴とする。また、TにはNiやCoを含ませ、防食効果を持たせることもできる。', '本发明的一个目的是提供一种制造NdFeB烧结磁体的方法,该磁铁可以应用于施加而不降低残留的磁通密度和最大能量产品,并且不降低最大能量产品。根据本发明的NdFeB烧结磁体的制造方法粘附在NdFeB烧结磁体的表面上,粘附在含有Dy和/或Tb的粘合力,并且通过NdFeB烧结磁体的晶界进行Dy或Tb。在用于生产高机械和增强的磁体制造方法,(1)(1),附着于NdFeB烧结磁体的表面的μD或Tb的物质基本上是金属粉末,(2)金属粉是元素来自稀土元素R的X和铁组过渡元件T,或形成合金或T,R或T,或金属间化合物的元素X,以及NdFeB烧结磁体中所含的氧的量为5000ppm或少。它的特征在于它是。此外,T可包括Ni和Co,并且可以具有防腐蚀效果。', 'JP2008534234', 1185120000, 'JP5226520B2', 1372780800, 1264003200, NULL, 1363881600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, '2006250462', 'JP', 1158249600, 21, 21, NULL, NULL, 10, 0, 0, 0, 6, NULL, '863', NULL, '右田 勝則', NULL, 'JP1987074048A | JP1989117303A | JP1998064746A | JP2001254138A | JP2004304038A | JP2005011973A | JP2005175138A | JP2007053351A | WO2004114333A1 | WO2006064848A1', NULL, 'K. T. Park 他、「Nd-Fe-B薄膜焼結磁石の保磁力への金属被覆と加熱の効果」、第16回希土類磁石とその応用に関する国際会議会議録、社団法人日本金属学会発行、2000年、第257-264頁(K. T. Park et al., \"Effect of Metal-Coating and Consecutive Heat Treatment on Coercivity of Thin Nd-Fe-B Sintered Magnets\", Proceedings of the Sixteenth International Workshop on Rare-Earth Magnets and their Applications (2000), pp. 257-264.) | 廣田晃一 他、「粒界拡散法によるNd-Fe-B系焼結磁石の高保磁力化」、粉体粉末冶金協会平成17年春季大会講演概要集、粉体粉末冶金協会発行、第143頁 | 町田憲一 他、「Nd-Fe-B系焼結磁石の粒界改質と磁気特性」、粉体粉末冶金協会平成16年春季大会講演概要集、粉体粉末冶金協会発行、1-47A | 町田憲一 他、「粒界改質型Nd-Fe-B系焼結磁石の磁気特性」、粉体粉末冶金協会平成17年春季大会講演概要集、粉体粉末冶金協会発行、第144頁 | 石垣尚幸 他、「ネオジム系微小焼結磁石の表面改質と特性向上」、NEOMAX技報、株式会社NEOMAX発行、2005年、第15巻、第15-19頁 | 福田泰隆 他、「擬三元系磁石合金Nd-(Fe, Co, Ni)-Bの磁気特性と耐食性」、川崎製鉄技報、川崎製鉄株式会社発行、1989年、第21巻、第4号、第312-315頁', 1, '\\20220510\\e79789f1006e47b9977f8ffb4f26321a.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39283, 39285, 39284, 22);
INSERT INTO `os_patent` VALUES (22975, '발명의 명칭 ＮｄＦｅＢ 소결자석의 제조방법', '发明名称NdFeB烧结磁铁的制造方法', 'KR101447301B1', '본 발명의 과제는, 높은 보자력(保磁力, coercive force)을 가짐과 함께, 잔류 자속밀도나 최대 에너지 적(積)을저하시키지 않아서, 재가공하지 않고 응용에 제공할 수 있는 NdFeB 소결자석의 제조방법을 제공하는 것에 있다.\n\n본 발명에 관한 NdFeB 소결자석의 제조방법은, NdFeB 소결자석의 표면에 Dy 및/또는 Tb을 함유하는 부착물을 부착시켜서 가열하고, Dy 또는 Tb을 NdFeB 소결자석의 입계(粒界)를 통하여, 그 내부에 확산시켜서 고(高)보자력화를 행하는 자석 제조방법에 있어서, ⑴ NdFeB 소결자석의 표면에 부착시키는 Dy 또는 Tb을 함유하는 물질을 실질적으로 금속분말로 함과 함께, ⑵ 상기 금속분말이 희토류 원소(稀土類元素, rare-earth elements)(R)와 철족 천이원소(鐵族遷移元素, iron-group transition element)(T)로부터, 혹은 R과 T 및 R 혹은 T와 합금 혹은 금속 간화합물을 형성하는 원소 X로 이루어지며, ⑶ NdFeB 소결자석 속에 함유되는 산소량이 5000ppm 이하인 것을 특징으로 한다. 또한, T에는 Ni이나 Co를 함유시켜, 부식방지 효과를 갖게 할 수도 있다.', '本发明的一个目的是用具有（保磁力，矫顽力）一起产生高矫顽力的方法，因为在剩余磁通密度或最大磁能积（积）不降低，不能再加工以提供应用NdFeB烧结磁体之类的。\n\n根据本发明，钕铁硼通过Dy和/或加热和其中的晶粒边界（粒界）的烧结磁体的钕铁硼生产方法附着含有Tb和Dy或Tb在烧结磁铁的NdFeB烧结磁体的表面上的沉积物，并在磁铁的制造方法，其中，一个高（高）的矫顽力通过扩散屏幕在其中，⑴钕铁硼与还含有Dy或Tb附着在烧结磁体的表面以基本金属粉末的物质，⑵金属粉末是一种稀土所述元件（稀土类元素，稀土类元素）（R）和铁族过渡元素从（铁族迁移元素，铁族过渡元素）（T），或R和T和R，或T，和合金或金属间化合物（3）NdFeB烧结磁铁中含有的氧量为5,000ppm以下。另外，可以在T中含有Ni或Co以具有防腐蚀效果。', 'KR1020097007612', 1185120000, 'KR101447301B1', 1412524800, 1246896000, NULL, 1411660800, '韩国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 19, 1, 0, 0, 0, NULL, NULL, NULL, '2006250462', 'JP', 1158249600, 21, 21, NULL, NULL, 2, 8, 4, 7, 0, NULL, NULL, NULL, NULL, NULL, 'US20060278517A1 | US6261515B1', 'KR1020180023984A | KR1020180023985A | KR1020190125769A | KR1020190125770A | KR102074281B1 | KR102099168B1 | KR102261143B1 | US10490326B2', NULL, 1, '\\20220510\\2d9efb0aaea74b52821bb1ea8f964073.png', NULL, NULL, 1, NULL, NULL, 15, NULL, NULL, NULL, 39283, 39285, 39284, 22);
INSERT INTO `os_patent` VALUES (22976, 'VERFAHREN ZUM HERSTELLEN EINES GESINTERTEN NDFEB-MAGNETEN', '制造烧结NDFEB磁体的方法', 'DE602007049337T2', 'A process for producing a sintered NdFeB magnet which has high coercivity and which can be used in applications without lowering its residual magnetic flux density or maximum energy product and without necessitating reprocessing. The process for producing a sintered NdFeB magnet comprises adhering a substance comprising dysprosium and/or terbium to the surface of a sintered NdFeB magnet and heating it to diffuse the dysprosium or terbium into inner parts of the sintered NdFeB magnet via grain boundaries thereof and thereby heighten the coercivity. The process is characterized in that (1) the substance comprising dysprosium or terbium which is to be adhered to the surface of the sintered NdFeB magnet is substantially a metallic powder, (2) the metallic powder comprises a rare earth element (R) and an iron-family transition element (T) or comprises the elements (R) and (T) and an element (X) forming an alloy or intermetallic compound with the element (R) or (T), and (3) the oxygen content in the sintered NdFeB magnet is 5,000 ppm or lower. The element (T) may include nickel or cobalt so as to impart an anticorrosive effect.', '一种制造烧结NdFeB磁体的方法，该磁体具有高矫顽力并且可以在不降低其剩余磁通密度或最大能量积而不需要再加工的情况下用于应用中。制造烧结NdFeB磁体的方法包括将包含镝和/或铽的物质粘附到烧结NdFeB磁体的表面上并加热它以通过其晶界将镝或铽扩散到烧结NdFeB磁体的内部中从而提高矫顽力。该方法的特征在于：（1）将要粘附到烧结NdFeB磁体表面上的包含镝或铽的物质基本上是金属粉末，（2）金属粉末包含稀土元素（R）和铁族过渡元素（T）或包含元素（R）和（T）和元素（X）与元素（R）或（T）形成合金或金属间化合物，和（3）氧含量烧结的NdFeB磁体为5,000ppm或更低。元素（T）可包括镍或钴，以赋予防腐蚀效果。', 'DE602007049337', 1185120000, 'DE602007049337T2', 1482854400, 1482854400, NULL, 1482854400, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 31, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '876', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39286, 39285, 39287, 22);
INSERT INTO `os_patent` VALUES (22977, 'R-Fe-B系希土類焼結磁石およびその製造方法', 'R-Fe-B系稀土烧结磁铁及其制造方法', 'JP4962198B2', '【課題】希少資源である重希土類元素RHを有効活用し、その使用量を低減させたR-Fe-B系希土類焼結磁石を提供する。\n\n【解決手段】本発明によるR-Fe-B系希土類焼結磁石の製造方法では、重希土類元素RH(Dy、Ho、およびTbからなる群から選択された少なくとも1種)を含有するバルク体2を処理室11内に配置した後、処理室11を700℃以上1100℃以下に加熱することにより、処理室11内の少なくともバルク体2の近傍にRH蒸気雰囲気を形成する。次に、この処理室11内にR-Fe-B系希土類焼結磁石体1を搬入し、この焼結磁石体1をバルク体2と対向配置させて10分以上600分以下の時間保持する。こうして、重希土類元素RHを焼結磁石体1の表面に供給しつつ、重希土類元素RHを焼結磁石体1の内部に拡散させる。\n\n【選択図】図1', '本发明的一个目的是提供一种基于R-Fe-B基随机烧结磁体,其有效地利用重稀土元素RH,这是一种稀有资源。\n\n一种制造根据本发明的R-Fe-B基稀土烧结磁体的方法,含有重稀土元素RH(Dy,HO和至少一种选自Tb)2的散装体2在处理室11中布置后,将处理室11加热至700℃以上且1100℃或更低,由此在处理室11中的散装体2附近形成Rh蒸汽气氛。接下来,在处理室11中进行R-Fe-B基稀土烧结磁体1,烧结磁体1设置在与散装体2相对的情况下并保持超过10分钟或600分钟或少。因此,重稀土元素RH在烧结磁体1内扩散,同时将重稀土元素RH供应到烧结磁体1的表面。\n\n图1', 'JP2007204304', 1186329600, 'JP4962198B2', 1340726400, 1235577600, NULL, 1333641600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 18, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '田中 純一', NULL, NULL, NULL, NULL, 1, '\\20220510\\6e28d963cd794597b84fd8e28ac72312.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39288, 39290, 39289, 2);
INSERT INTO `os_patent` VALUES (22978, 'NdFeB系焼結磁石の製造方法およびNdFeB焼結磁石製造用モールド', '制造用于制造NdFeB烧结磁体的NdFeB烧结磁体和模具的方法', 'JP4879843B2', '【課題】安価で加工しやすく脆化が生じないモールドを用いて、NdFeB系焼結磁石を湾曲や変形が生じることなく製造することができる方法及びモールドを提供する。\n\n【解決手段】モールドのうちの少なくとも一部(例えば底板11)に炭素材料を用いる。炭素材料は金属よりも、焼結時に焼結体との間に生じる摩擦が小さいため、焼結収縮による摩擦を原因とする湾曲や変形を生じさせることなく、NdFeB系焼結磁石を製造することができる。しかも、炭素材料は安価で加工しやすく、モールドを繰り返し使用しても脆化が生じることがない。このような効果は、焼結時に焼結体の荷重が掛かる底板11に炭素材料を使用することにより、特に顕著に得ることができる。\n\n【選択図】図1', '要解决的问题：提供一种能够制造NdFeB基烧结磁体的方法和模具，其通过使用廉价，易于加工且不会导致脆化的模具而不弯曲或变形。\n\n碳材料用于模具的至少一部分（例如，底板11）。由于在烧结时碳材料和烧结体之间产生的摩擦小于金属的摩擦，因此必须制造NdFeB基烧结磁体而不会由于烧结收缩引起的摩擦引起弯曲或变形。你可以做到。另外，碳材料便宜且易于加工，即使重复使用模具也不会发生脆化。通过在烧结过程中使用碳材料作为底板11的负荷，可以特别显着地获得这种效果。\n\n点域1', 'JP2007214074', 1187539200, 'JP4879843B2', 1329840000, 1236182400, NULL, 1323360000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 15, 15, NULL, NULL, 0, 0, 0, 0, 0, NULL, '863', NULL, '山田 倍司', NULL, NULL, NULL, NULL, 1, '\\20220510\\ab160bcbf5a449608091120c617f5952.png', NULL, NULL, 1, NULL, NULL, 14, NULL, NULL, NULL, 39291, 39293, 39292, 16);
INSERT INTO `os_patent` VALUES (22979, 'Mgを含むAl被膜を表面に有する希土類系永久磁石およびその製造方法', '在其表面上具有含Mg的Al涂层的稀土基永磁体及其制造方法', 'JP5056267B2', '【課題】 優れた耐塩水性を発揮するMgを含むAl被膜を表面に有する希土類系永久磁石およびその製造方法を提供すること。\n\n【解決手段】 本発明のMgを含むAl被膜を表面に有する希土類系永久磁石は、被膜のMg濃度が厚み方向において磁石体との界面側よりも外表面側の方が高く、かつ、被膜の外表面側の表面にAlおよび/またはMgが酸化および/または水酸化された層を有することを特徴とする。その製造方法は、蒸着装置の処理室内において希土類系永久磁石の表面にMgを含むAl被膜を蒸着形成した後、160℃以上の高温にある磁石の冷却を、磁石の温度が少なくとも60℃に達するまで10℃/分以上の冷却速度で急冷することで行い、得られたMgを含むAl被膜を表面に有する希土類系永久磁石の被膜の表面に対し、被膜中のAlおよび/またはMgを酸化および/または水酸化する処理を施すことを特徴とする。\n\n【選択図】図3', '一种稀土基永磁体和制造具有含有优异耐盐性的Al涂层的相同方法。\n\n具有含有Mg的Al涂层的稀土基永磁体在本发明的Mg的表面上是在外表面侧的Mg浓度的表面上比界面侧沿厚度方向侧面,以及涂层的特征在于Al和/或Mg是外表面侧的表面上的氧化和/或羟基化层。制造方法在气相沉积设备的处理室中的稀土永磁体的表面上沉积含有Mg的Al涂层,然后在160的高温下磁体的温度达到至少60℃ ℃或更高。通过以10℃/ min的冷却速率的快速冷却,涂层中的Al和/或Mg相对于具有所获得的稀土永磁体的涂层的表面被氧化表面上的mg。它的特征是受到/或羟基的特征。\n\n图3.', 'JP2007218833', 1187884800, 'JP5056267B2', 1351008000, 1236787200, NULL, 1344528000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '池田 安希子', NULL, NULL, NULL, NULL, 1, '\\20220510\\aa7c22cb78144a14b2f54d35452f809b.png', NULL, NULL, 1, NULL, NULL, 11, NULL, NULL, NULL, 39294, 39296, 39295, 2);
INSERT INTO `os_patent` VALUES (22980, 'R-Fe-B系希土類焼結磁石およびその製造方法', 'R-Fe-B系稀土烧结磁铁及其制造方法', 'JP4788690B2', '【課題】残留磁束密度Brや角形比Hk/HcJの低下を抑えつつ、保磁力HcJを向上させる。\n\n【解決手段】本発明によるR-Fe-B系希土類焼結磁石の製造方法では、まず軽希土類元素RL(NdおよびPrの少なくとも1種)を主たる希土類元素Rとして含有するR2Fe14B型化合物結晶粒を主相として有するR-Fe-B系希土類焼結磁石体を用意する。次に、焼結磁石体の表面にM元素(Dy、Ho、およびTbからなる群から選択された少なくとも1種)を供給しつつ、焼結磁石体を加熱し、表面からM元素を希土類焼結磁石体の内部に拡散させる。\n\n【選択図】図1', '种类代码：A1 A矫顽力H  cJ 。\n\n解决方案：在根据本发明的制备R-Fe-B基稀土烧结磁体的方法中，首先，R  2 含有轻稀土元素RL（Nd和Pr中的至少一种）作为主要稀土元素R， / sub>制备具有B型化合物晶粒作为主相的Fe  14  R-Fe-B稀土烧结磁体。接下来，在将M元素（选自Dy，Ho和Tb中的至少一种）供应到烧结磁体的表面的同时，加热烧结磁体，并且M元素是稀土烘焙的。并将其扩散到磁体中。\n\n点域1', 'JP2007219422', 1188144000, 'JP4788690B2', 1317744000, 1236787200, NULL, 1311868800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '山田 倍司', NULL, NULL, NULL, NULL, 1, '\\20220510\\0f32c6f633704472b88a9acb97669f90.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 39297, 39299, 39298, 2);
INSERT INTO `os_patent` VALUES (22981, 'R-T-B系焼結永久磁石用急冷合金およびそれを用いたR-T-B系焼結永久磁石', '用于R-T-B基烧结永磁体的淬火合金和使用其的R-T-B基烧结永磁体', 'JP5299737B2', '【課題】Rリッチ相が均一かつ微細に分散された組織を有し、粉砕性に優れ、かつ配向度を高めることができるR-T-B系焼結永久磁石用急冷合金の提供。\n\n【解決手段】合金溶湯を急冷してなる薄板状のR-T-B(Rは希土類元素のうち少なくとも一種、Tは遷移金属元素のうち少なくとも一種、Bはほう素)系焼結永久磁石用急冷合金であって、薄板状急冷合金の両主面に核発生点を起点とした放射状組織を有し、前記両主面及び一方主面から他方主面までの領域にある前記両主面に平行な面におけるX線回折パターンの(410)の強度I(410)と(006)の強度I(006)の比I(410)/I(006)が0.2以下であり、前記両主面に対して垂直な方向にc軸が配向していることを特徴とするR-T-B系焼結永久磁石用急冷合金。\n\n【選択図】図5', '要解决的问题：为R-T-B系烧结永磁体提供淬火合金，其具有其中富R相的成分均匀且细微地分散的结构，具有优异的可破碎性并且可以提高取向度。 ŽSOLUTION：用于RTB基烧结永磁体的淬火合金（其中R代表稀土元素中的至少一种元素，T代表过渡金属元素中的至少一种元素，B代表硼）通过以下方式形成薄板形状：淬火合金的熔融金属，并具有从在薄板的两个主表面上形成的成核点开始的径向结构，其中比率I （410） / I （006 X射线衍射图案（410）和（006）的强度I （410）和I （006）的分别为0.2或更小两个主表面和在从一个主表面到另一个主表面的区域中平行于两个主表面的平面中，并且c轴在垂直于两个主表面的方向上取向。 Ž', 'JP2007255098', 1190908800, 'JP5299737B2', 1380038400, 1240416000, NULL, 1372348800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 3, 0, 0, 0, 1, NULL, NULL, NULL, '河野 一夫', NULL, 'JP1985089546A | JP1990501101A | JP2006041334A', NULL, '東北大学金属材料研究所強磁場超伝導材料研究センター年次報告(Vol.2005 Page.140-142(2006.06))', 1, '\\20220510\\c6404e5ca0804192a1fcdab1749837d0.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39300, 39302, 39301, 3);
INSERT INTO `os_patent` VALUES (22982, '耐塩水性磁石合金粉、及びそれを用いて得られるボンド磁石用樹脂組成物、ボンド磁石又は圧密磁石', '耐盐盐磁铁合金粉末，通过使用其获得的粘结磁铁用树脂组合物，粘结磁铁或压缩磁铁', 'JP4412376B2', '【課題】塩水に触れる環境下でも錆が発生しない耐塩水性磁石合金粉、及びそれを用いて得られるボンド磁石用樹脂組成物、ボンド磁石又は圧密磁石の提供。\n\n【解決手段】希土類元素を含む鉄系磁石合金粉からなる磁石粉末(A)が、少なくともアルミニウム、亜鉛、マンガン、銅又はカルシウムから選ばれた1種以上の金属の酸化物、複合酸化物、リン酸塩又はリン酸水素化合物とリン酸が添加された有機溶媒中で、平均粒径8μm以下に粉砕されることで、磁石合金粉の表面上に、鉄と希土類元素の金属リン酸塩(b-1)、及びアルミニウム、亜鉛、マンガン、銅又はカルシウムから選ばれた1種以上の金属リン酸塩(b-2)からなる複合金属リン酸塩被膜(B)が均一に形成されており、かつ、金属リン酸塩(b-2)の金属成分が、複合金属リン酸塩被膜(B)の金属成分に対して50重量%以上であることを特徴とする耐塩水性磁石合金粉などによって提供。\n\n【選択図】なし', '盐水磁体合金粉末不即使在环境接触通过使用相同的，从而提供粘结磁体或压粉磁铁获得的盐水和粘结磁铁的树脂组合物生锈。\n\n由含有稀土类元素（A）的铁基磁体合金粉末的磁铁粉末是至少铝，锌，锰，铜或钙，复合氧化物中的一种以上金属的氧化物，磷通过在添加有酸盐或磷酸氢盐化合物和磷酸的有机溶剂中研磨至平均粒径为8μm或更小，铁和稀土金属磷酸盐（b） -1）和一种或多种选自铝，锌，锰，铜或钙的金属磷酸盐（b-2）均匀地形成在复合金属磷酸盐涂膜的表面上，并且，提供金属磷酸盐（b-2）是，的金属成分，例如通过盐水磁体合金粉末，其特征在于小于50％的相对重量，以复合金属磷酸盐涂层的金属（b）成分。\n\n【选择图】无', 'JP2007254363', 1190908800, 'JP4412376B2', 1265731200, 1206547200, NULL, 1259251200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 5, 0, 0, 0, 1, NULL, NULL, NULL, '小池 秀介', NULL, 'JP1992021702A | JP1994077027A | JP2000058312A | JP2000208321A | JP2000294415A', NULL, '「粉体および粉末冶金」47号(2000)第801頁', 1, '\\20220510\\d48b2aa9b52143d38145e9961e32d6c8.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39303, 38870, 39304, 4);
INSERT INTO `os_patent` VALUES (22983, 'Magnetic field analysis method, magnetization analysis device, and recording medium with computer program', '磁场分析方法、磁化分析装置和带有计算机程序的记录介质', 'US8169213B2', 'It is possible to perform accurate magnetization analysis by considering the magnetic state of an incomplete magnetic region. A magnetization analysis device performs magnetization analysis by using a magnetizer parameter associated with a magnetizer and a magnet parameter associated with a magnet material so as to calculate a magnetization magnetic field applied to respective portions of the magnet material (S17), calculates a recoil ratio permeability and a coercivity as region of a permanent magnet as an analysis object for the respective portions according to the calculation result of the magnetized magnetic field and the demagnetization curve associated with the incomplete magnetization region actually measured in advance (S18), and performs a magnetic field analysis by using the calculation result of the region parameter so as to calculate a state parameter indicating the magnetized state of the permanent magnet as an analysis object (S19).', '通过考虑不完全磁性区域的磁状态，可以进行精确的磁化分析。磁化分析装置通过使用与磁化器相关联的磁化器参数和与磁体材料相关联的磁体参数来执行磁化分析，以便计算施加到磁体材料的各个部分的磁化磁场（S17），计算反冲比磁导率根据与预先实际测量的不完全磁化区域相关联的磁化磁场和退磁曲线的计算结果，作为各部分的分析对象的永磁体区域的矫顽力（S18），并执行磁场通过使用区域参数的计算结果进行分析，以计算表示作为分析对象的永磁体的磁化状态的状态参数（S19）。', 'US12/447354', 1193760000, 'US8169213B2', 1335801600, 1268236800, NULL, 1335801600, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 39, 2, 0, 0, 0, NULL, NULL, NULL, '2006297004', 'JP', 1162224000, 10, 10, NULL, NULL, 15, 3, 2, 3, 2, NULL, '877', NULL, 'AURORA, REENA', NULL, 'JP2000346919A | JP2002329624A | JP2004127058A | US20050151609A1 | US20060047196A1 | US5285393A | US5302893A | US5808392A | US5978694A | US6456059B1 | US6684483B2 | US6967551B2 | US7058527B2 | US7236899B1 | WO2005106720A2', 'US10712405B2 | US20130073270A1 | US9263184B2', 'EP Search Report issued in EP application No. 07830966.3 dated Jan. 3, 2012. | Kaitenki no Virtual Engineering no Tameo Denjikai Kaisekl Gijutsu, Technical Report of the Institute of Electrical Engineers of Japan No. 776, The Institute of Electrical Engincors of Japan, Mar. 15, 2000.', 1, '\\20220510\\d3341e191dde4326b4245682ab29b426.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39305, 39307, 39306, 11);
INSERT INTO `os_patent` VALUES (22984, 'Magnetization analysis method, magnetization analysis device, and computer program', '磁化分析方法、磁化分析装置及计算机程序', 'EP2098880B1', 'It is possible to perform accurate magnetization analysis by considering the magnetic state of an incomplete magnetic region. A magnetization analysis device performs magnetization analysis by using a magnetizer parameter associated with a magnetizer and a magnet parameter associated with a magnet material so as to calculate a magnetization magnetic field applied to respective portions of the magnet material (S 17), calculates a recoil ratio permeability and a coercivity as region of a permanent magnet as an analysis object for the respective portions according to the calculation result of the magnetized magnetic field and the demagnetization curve associated with the incomplete magnetization region actually measured in advance (S18), and performs a magnetic field analysis by using the calculation result of the region parameter so as to calculate a state parameter indicating the magnetized state of the permanent magnet as an analysis object (S19).', '通过考虑不完全磁性区域的磁状态，可以进行精确的磁化分析。磁化分析装置通过使用与磁化器相关联的磁化器参数和与磁体材料相关联的磁体参数来执行磁化分析，以便计算施加到磁体材料的各个部分的磁化磁场（S17），计算反冲比根据磁化磁场的计算结果和与预先实际测量的不完全磁化区域相关的退磁曲线，作为各部分的分析对象的永磁体区域的磁导率和矫顽力（S18），并且执行磁性通过使用区域参数的计算结果进行场分析，以计算表示作为分析对象的永磁体的磁化状态的状态参数（S19）。', 'EP2007830966', 1193760000, 'EP2098880B1', 1369152000, 1252425600, NULL, 1369152000, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 44, 2, 0, 0, 0, NULL, NULL, NULL, '2006297004', 'JP', 1162224000, 10, 10, NULL, NULL, 4, 0, 0, 0, 1, NULL, '878', NULL, NULL, NULL, 'JP2000346919A | JP2002329624A | JP2004127056A | WO2005106720A2', NULL, '\'Kaitenki no Virtual Engineering no Tameno Denjikai Kaiseki Gijutsu\' TECHNICAL REPORT OF THE INSTITUTE OF ELECTRICAL ENGINEERS OF JAPAN, THE INSTITUTE OF ELECTRICAL ENGINEERS OF JAPAN no. 776, 15 March 2000, XP008105850', 1, '\\20220510\\64478c23345040bf9ba521515f0a5b58.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, '有效:DE | 失效:FI,BE,PT,BG,DK,LT,LU,LV,FR,HU,SE,SI,MC,SK,GB,IE,EE,CH,MT,IS,IT,GR,ES,AT,CY,CZ,PL,RO,LI,TR,NL', 39305, 39307, 39306, 11);
INSERT INTO `os_patent` VALUES (22985, '着磁解析方法、着磁解析装置及びコンピュータプログラム', '磁化分析方法，磁化分析装置和计算机程序', 'JP4915419B2', '不完全着磁領域の着磁状態を考慮して、高精度に着磁解析することができる。\n\n  着磁解析装置は、着磁器に係る着磁器パラメータ及び磁石素材に係る磁石パラメータを用いて磁場解析を行なうことによって、磁石素材の各部位に印加される着磁磁界を算出し(S17)、着磁磁界の算出結果と、不完全着磁領域に係る予め実測された減磁曲線とに基づいて、解析対象となる永久磁石の不完全着磁領域に係る領域パラメータであるリコイル比透磁率と保磁力とを各部位について算出し(S18)、領域パラメータの算出結果を用いて磁場解析を行なうことによって、解析対象となる永久磁石の着磁状態を示す状態パラメータを算出する(S19)。', '考虑到不完全磁化区域的磁化状态，可以高精度地执行磁化分析。\n\n  磁化分析装置通过使用与磁体材料相关的磁化参数和与磁体材料相关的磁体参数进行磁场分析来计算施加到磁体材料的每个部分的磁化磁场（S17）。基于磁场的计算结果和先前测量的与不完全磁化区域相关的退磁曲线，反冲比率磁导率和保持率是与待分析的永磁体的不完全磁化区域相关的面积参数。计算每个部分的磁力（S18），并且使用面积参数的计算结果执行磁场分析，以计算表示待分析的永磁体的磁化状态的状态参数（S19）。', 'JP2008542155', 1193760000, 'JP4915419B2', 1334073600, 1267027200, NULL, 1328198400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 24, 2, 0, 0, 0, NULL, NULL, NULL, '2006297004', 'JP', 1162224000, 10, 10, NULL, NULL, 3, 2, 2, 2, 1, NULL, NULL, NULL, '山田 倍司', NULL, 'JP2000346919A | JP2002329624A | JP2004127056A', 'CN103605090A | CN103728578A', '回転機のバーチャルエンジニアリングのための電磁界解析技術,日本,社団法人電気学会,2000年  3月15日,第776号', 1, '\\20220510\\dc9d028154434f05856649175087c8e7.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39305, 39307, 39306, 11);
INSERT INTO `os_patent` VALUES (22986, 'MAGNETISIERUNGSANALYSEVERFAHREN, MAGNETISIERUNGSANALYSEEINRICHTUNG UND COMPUTERPROGRAMM', '磁化分析方法,磁化分析装置和计算机程序', 'DE602007030669T2', 'It is possible to perform accurate magnetization analysis by considering the magnetic state of an incomplete magnetic region. A magnetization analysis device performs magnetization analysis by using a magnetizer parameter associated with a magnetizer and a magnet parameter associated with a magnet material so as to calculate a magnetization magnetic field applied to respective portions of the magnet material (S17), calculates a recoil ratio permeability and a coercive force as region parameters associated with an incompletely magnetized region of a permanent magnet as an analysis object for the respective portions according to the calculation result of the magnetized magnetic field and the demagnetization curve associated with the incompletely magnetized region actually measured in advance (S18), and performs a magnetic field analysis by using the calculation result of the region parameter so as to calculate a state parameter indicating the magnetized state of the permanent magnet as an analysis object (S19).', '通过考虑不完全磁性区域的磁状态，可以进行精确的磁化分析。磁化分析装置通过使用与磁化器相关联的磁化器参数和与磁体材料相关联的磁体参数来执行磁化分析，以便计算施加到磁体材料的各个部分的磁化磁场（S17），计算反冲比磁导率根据磁化磁场的计算结果和与预先实际测量的未完全磁化区域相关的退磁曲线，作为与永磁体的未完全磁化区域相关的区域参数的矫顽力作为各个部分的分析对象（ S18），通过使用区域参数的计算结果进行磁场分析，以计算表示作为分析对象的永磁体的磁化状态的状态参数（S19）。', 'DE602007030669', 1193760000, 'DE602007030669T2', 1369152000, 1369152000, NULL, 1369152000, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 55, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '879', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39308, 39307, 39309, 11);
INSERT INTO `os_patent` VALUES (22987, 'R-Fe-B系永久磁石用多孔質材料およびその製造方法', '用于R-Fe-B基永磁体的多孔材料及其制备方法', 'JP4872887B2', '【課題】従来のボンド磁石に比べて高い磁気特性、特に高い角形性を示し、かつ、従来の焼結磁石よりも形状の自由度の高いR-Fe-B系永久磁石用多孔質材料を提供する。\n\n【解決手段】 本発明のR-Fe-B系永久磁石用多孔質材料の製造方法は、平均粒径20μm未満のR-Fe-B系希土類合金粉末を用意する工程と、前記R-Fe-B系希土類合金粉末を成形して圧粉体を作製する工程と、水素ガス中において前記圧粉体に対し550℃以上650℃未満の温度で熱処理を施し、それによって水素化および不均化反応を起こす工程と、真空または不活性雰囲気中において前記圧粉体に対し550℃以上1000℃未満の温度で熱処理を施し、それによって脱水素および再結合反応を起こす工程とを含む。\n\n【選択図】図1', '要解决的问题：为R-Fe-B基永磁体提供多孔材料，与传统的粘结磁体相比，具有高磁特性，特别高的矩形度，并且具有比传统烧结磁体更高的形状自由度到。\n\n本发明的R-Fe-B系永磁体多孔材料的制备方法包括以下步骤：制备平均粒径小于20μm的R-Fe-B基稀土合金粉末; B基稀土合金粉末制备生坯;在550℃或更高且低于650℃的温度下在氢气中对坯块进行热处理，由此氢化和歧化反应并且在真空或惰性气氛中使生坯在550℃或更高且低于1000℃的温度下进行热处理，从而引起脱氢和再结合反应。\n\n点域1', 'JP2007297183', 1195056000, 'JP4872887B2', 1328630400, 1244044800, NULL, 1322755200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 38, 5, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '酒井 朋広', NULL, NULL, NULL, NULL, 1, '\\20220510\\91f82f403c2346e0a51d74c13f4a7fbb.png', NULL, NULL, 1, NULL, NULL, 14, NULL, NULL, NULL, 39310, 39312, 39311, 2);
INSERT INTO `os_patent` VALUES (22988, '希土類系永久磁石', '希土类系永久磁石', 'JP4363480B2', '【課題】 接着性を改善した、希土類系永久磁石に関する。\n\n【解決手段】 積層めっき皮膜を有する希土類系永久磁石であって、めっき皮膜の最表層が膜厚0.1μm以上3μm以下のSnCu合金めっき皮膜であり、前記SnCu合金めっき皮膜の組成は、Snが35mass%以上55mass%以下で残部が実質的にCuである。本希土類系永久磁石を用いて作成した接合構造体はシリコーン系接着剤との組み合わせにおいて、良好な初期接着強度を持ち、耐湿性試験後においても接着強度の低下が少ない。\n\n【選択図】なし', '要解决的问题：提供具有改善的粘合性的稀土基永磁体。 ŽSOLUTION：稀土基永磁体具有层压镀层。镀覆的涂层是SnCu合金镀层，其顶表面层的厚度为0.1μm或更大至3μm或更小。 SnCu合金镀层由35质量％以上且55质量％以下的Sn和大量的Cu残留物构成。使用稀土基永磁体产生的结结构与硅基粘合剂结合具有优异的初始粘合强度，并且在耐湿性测试后保持粘合强度。 Ž', 'JP2007296593', 1195056000, 'JP4363480B2', 1257868800, 1214409600, NULL, 1251388800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 17, 2, 0, 0, 0, NULL, NULL, NULL, '2006308959', 'JP', 1163520000, 2, 2, NULL, NULL, 9, 0, 0, 0, 0, NULL, NULL, NULL, '山田 正文', NULL, 'JP1989321610A | JP1993029119A | JP1995135121A | JP2002329627A | JP2003193273A | JP2003257721A | JP2004039917A | JP2006179801A | JP2007273503A', NULL, NULL, 1, '\\20220510\\f500f196d749447cb0daf46eec8e4160.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39313, 39315, 39314, 2);
INSERT INTO `os_patent` VALUES (22989, 'Rare earth element-iron-boron alloy, and magnetically anisotropic permanent magnet powder and method for production thereof', '稀土元素-铁-硼合金、磁各向异性永磁粉末及其制造方法', 'US7892365B2', 'A method of making a magnetically anisotropic magnet powder according to the present invention includes the steps of preparing a master alloy by cooling a rare-earth-iron-boron based molten alloy and subjecting the master alloy to an HDDR process. The step of preparing the master alloy includes the step of forming a solidified alloy layer, including a plurality of R2Fe14B-type crystals (where R is at least one element selected from the group consisting of the rare-earth elements and yttrium) in which rare-earth-rich phases are dispersed, by cooling the molten alloy through contact with a cooling member.', '制造根据本发明的磁各向异性磁铁粉末的方法包括通过冷却稀土 - 铁 - 硼基熔融合金制备母合金并使母合金经受HDDR工艺的步骤。制备母合金的步骤包括形成固化合金层的步骤，该合金层包括多个R2Fe14B型晶体（其中R是选自稀土元素和钇中的至少一种元素），其中稀有通过与冷却构件接触冷却熔融合金，使富含相的相分散。', 'US11/950801', 1196784000, 'US7892365B2', 1298304000, 1210780800, NULL, 1298304000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 36, 2, 0, 0, 0, NULL, NULL, NULL, '2001385941 | 2002030392 | PCT/JP2002/013268', 'JP | JP | WO', 1008691200, 10, 13, NULL, NULL, 15, 4, 4, 4, 0, NULL, '849', NULL, 'SHEEHAN, JOHN P', NULL, 'JP1996026112A | JP1996260112A | JP1998036949A | JP2000178611A | JP2000219942A | JP2000219943A | JP2001176712A | US20020059965A1 | US20020153062A1 | US20030136469A1 | US20050011588A1 | US4981532A | US5383978A | US5908513A | US7018485B2', 'US9064625B2 | WO2013022934A1 | WO2013022940A1 | WO2013022942A1', NULL, 1, '\\20220510\\48807e4b3cb542128469fbf61333e9e6.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 39316, 38968, 38967, 13);
INSERT INTO `os_patent` VALUES (22990, '磁界発生装置の製造方法', '制造磁场产生装置的方法', 'JP4586850B2', '【課題】輸送後における磁界強度の低下および磁界均一性の悪化を抑制できる、磁界発生装置およびその製造方法を提供する。\n\n【解決手段】磁界発生装置10は一対の磁極ユニット11a,11bを含む。一対の磁極ユニット11a,11bは板状継鉄12a,12bを含む。一対の板状継鉄12a,12bのそれぞれの対向面側には永久磁石群14a,14bが配置され、永久磁石群14a,14bのそれぞれの対向面側には磁極板16a,16bが固着される。永久磁石群14a,14bは永久磁石18を含む。磁極板16a,16bは、環状突起24と環状突起24の外側面に設けられた漏洩磁束防止用の永久磁石28とを含む。永久磁石18,28は、着磁率が80%以上99.9%以下のR-Fe-B系磁石を含む。製造時には、組み立てられた磁極ユニット11a,11bを40℃以上70℃以下で加温する。\n\n【選択図】図2', '要解决的问题：提供一种磁场发生器及其制造方法，能够减少磁场强度的下降和运输后磁场均匀性的恶化。解决方案：磁场发生器10包括一对磁极单元11a，11b。一对磁极单元11a，11b包括一对板状磁轭12a，12b。永磁体组14a，14b分别设置在一对板状磁轭12a，12b的相对的两侧，磁极板16a，16b分别固定在永磁体组14a，14b的相对的两侧。永磁体组14a，14b包括永磁体18.磁极板16a，16b包括环形凸起24和永磁体28，用于防止设置在环形凸起24的外表面上的漏磁通。永磁体18 28包括R-Fe-B基磁体，其磁化率为80％或更高且99.9％或更低。在制造期间，组装的磁极单元11a，11b被加热到40℃或更高且70℃或更低。 Ž', 'JP2007330824', 1198166400, 'JP4586850B2', 1290528000, 1213200000, NULL, 1284652800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 2, 0, 0, 0, NULL, NULL, NULL, '2002037746', 'JP', 1013702400, 2, 13, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '長谷川 直也', NULL, NULL, NULL, NULL, 1, '\\20220510\\18210b9ed2ad4adea8db27b9bcb8fbbc.png', NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 39317, 38985, 38984, 13);
INSERT INTO `os_patent` VALUES (22991, 'NdFeB焼結磁石の製造方法及びNdFeB焼結磁石', '制造NdFeB烧结磁体和NdFeB烧结磁体的方法', 'JP5328161B2', '【課題】従来よりも保磁力及び角型性が高いNdFeB焼結磁石の製造方法を提供する。\n\n【解決手段】本発明は、NdFeB焼結磁石基材の表面にDy及び/又はTbを含む層を形成した後に前記磁石基材の焼結温度以下の温度に加熱することにより前記層中のDy及び/又はTbを前記磁石基材の結晶粒界を通じて前記磁石基材内部に拡散させる粒界拡散処理を行うNdFeB焼結磁石の製造方法において、a)前記磁石基材中に含まれる金属状態の希土類量が12.7at%以上であり、b)前記層が粉末の堆積により形成される粉体層であり、c)前記粉体層が50mass%以上の金属状態のDy及び/又はTbを含有する、\n\nことを特徴とする。\n\n【選択図】図3', '要解决的问题：提供一种生产NdFeB烧结磁体的方法，该磁体具有比常规磁体更高的矫顽力和更高的磁化曲线矩形度。解决方案：制造NdFeB烧结磁体的方法，包括在NdFeB烧结磁体基底的表面上形成含有Dy和/或Tb的层，并将所得磁体前体加热至不超过磁体基底的烧结温度的温度通过用于晶界扩散处理的基底的晶界将层中包含的Dy和/或Tb扩散到磁体基底内部，其特征在于：（a）磁体基体中金属稀土元素的含量为12.7at。％或更高，（b）该层是通过粉末的积聚形成的粉末层，和（c）粉末层含有50质量％或更高的金属Dy和/或Tb。', 'JP2008004845', 1199980800, 'JP5328161B2', 1383062400, 1248883200, NULL, 1375372800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 15, 15, NULL, NULL, 10, 0, 0, 0, 5, NULL, '863', NULL, '田中 純一', NULL, 'JP1987074048A | JP1989117303A | JP2006303435A | JP2007053351A | JP2007258455A | JP2007287874A | JP2007287875A | WO2006043348A1 | WO2008032426A1 | WO2008139690A1', NULL, 'K. T. Park他、「Nd-Fe-B薄膜焼結磁石の保磁力への金属被覆と加熱の効果」、第16回希土類磁石とその応用に関する国際会議会議録、社団法人日本金属学会発表、2000年、第257-264頁(K. T. Park et al., \"Effect of Metal-Coating and Consecutive Heat Treatment on Coercivity of Thin Nd-Fe-B Sintered Magnets\", Proceeding of the Sixteenth International Workshop on Rare-Earth Magnets and their Applications (2000), pp. 257-264.) | 廣田晃一 他、「粒界拡散法によるNd-Fe-B系焼結磁石の高保磁力化」、粉体粉末冶金協会平成17年春季大会講演概要集、粉体粉末冶金協会発行、第143頁 | 町田憲一 他、「Nd-Fe-B系焼結磁石の粒界改質と磁気特性」、粉体粉末冶金協会平成16年春季大会講演概要集、粉体粉末冶金協会発行、1-47A | 町田憲一 他、「粒界改質型Nd-Fe-B系焼結磁石の磁気特性」、粉体粉末冶金協会平成17年春季大会講演概要集、粉体粉末冶金協会発行、第144頁 | 石垣尚幸 他、「ネオジム系微小焼結磁石の表面改質と特性向上」、NEOMAX技報、株式会社NEOMAX発行、2005年、第15巻、第15-19頁', 1, '\\20220510\\2d1bcc8d0a70420b8bfedb19861bf529.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 39318, 39320, 39319, 16);
INSERT INTO `os_patent` VALUES (22992, '焼結型永久磁石の製造方法及び金型', '生产烧结永久MAG和模具的方法', 'JP4706872B2', '【課題】変形やクラックの発生がなく磁気的配向に優れたラジアル異方性を有するリング状焼結型R-Fe-B系永久磁石の製造方法、及び前記磁石の製造に好適な金型を提供する。\n\n【解決手段】焼結型R-Fe-B系永久磁石用粗粉(RはYを含む希土類元素の中から選択される少なくとも1種の希土類元素)を粉砕した微粉を、鉱物油、合成油又はこれらの混合油中に回収して得られたスラリーを金型のキャビティに加圧注入して磁界中で湿式成形し、得られた成形体を減圧下で加熱して前記油を除去し、真空中で焼結する焼結型永久磁石の製造方法であって、前記金型は中空構造のダイ部材とダイ部材の内周側にリング形状のキャビティを介して配置されたコアとを有し、ダイ部材にはスラリーを加圧注入するためのスラリー注入孔が設けられ、この注入孔の軸線方向が前記コアの中心から外れていることを特徴とする。\n\n【選択図】図2', '一种用于制造具有径向各向异性发生的环形烧结型R-Fe-B系永磁体的变形和开裂过程具有优异的磁取向，而不，和合适的模具生产的磁体的提供。\n\n一种烧结R-Fe-B系永磁体的粗微粉（R是从稀土类元素包括Y中选出的至少一种稀土元素）研磨，矿物油，合成油或得到的浆液中回收压力下这些混合油注入到模腔中和湿模制在磁场中，将得到的成型体在减压下加热以除去油，制造在真空烧结的烧结型永磁体，模具和设置在所述金属盖构件的环状的内周的空腔中的芯和模具的中空结构件的方法并且，模具构件设置有用于加压和注入浆料的浆料注入孔，并且注入孔的轴向偏离芯的中心。\n\n.The', 'JP2008007983', 1200499200, 'JP4706872B2', 1308672000, 1216224000, NULL, 1300982400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 30, 6, 0, 0, 0, NULL, NULL, NULL, '2002294431 | 2002362391 | 2003020669', 'JP | JP | JP', 1034006400, 3, 17, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '平塚 義三', NULL, NULL, NULL, NULL, 1, '\\20220510\\177c670f48de456a8eb96f3f1d0e4e2c.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39321, 39025, 39024, 17);
INSERT INTO `os_patent` VALUES (22993, 'NdFeB焼結磁石の製造方法', 'NdFeB烧结磁体的制造方法', 'JP5209349B2', '【課題】保磁力及び磁化曲線の角型性が高いNdFeB焼結磁石を製造する方法を提供する。\n\n【解決手段】本発明に係るNdFeB焼結磁石の製造方法は、NdFeB焼結磁石基材の表面にDy及び/又はTbを含む層を形成した後に前記磁石基材の焼結温度以下の温度に加熱することにより、前記層中のDy及び/又はTbを前記磁石基材の結晶粒界を通じて前記磁石基材内部に拡散させる粒界拡散処理を行う方法において前記磁石基材中に含まれる金属状態の希土類量が12.9原子%以上であり、前記層が50質量%以上のDyのフッ化物及び/又はTbのフッ化物を含有する、ことを特徴とする。これにより、従来は特性の向上が困難であった3〜6mmという厚い厚みを持つ場合においても、1.4mA/m以上という高い保磁力を有し、且つ磁化曲線の角型性が高いNdFeB焼結磁石を製造することができる。\n\n【選択図】なし', '要解决的问题：提供一种制造具有高矫顽力和高方形特性的NdFeB烧结磁体的磁化曲线的方法。 ŽSOLUTION：在NdFeB烧结磁体的制造方法中，通过磁体的晶粒边界，在包括Dy和/或Tb的层中将Dy和/或Tb扩散到磁体基部的内部的晶界扩散处理通过在NdFeB烧结磁体基底的表面上形成该层，并将其加热到不高于该磁体基底的烧结温度的温度;包含在磁铁基体中的金属状态的稀土量不小于12.9原子％;该层包含Dy的氟化物和/或Tb的氟化物不低于50质量％。即使磁体的厚度为3至6mm，这在传统情况下难以改善特性，具有不低于1.4mA / m的高矫顽力的NdFeB烧结磁体和磁化曲线的高方形性能可以制造。 Ž', 'JP2008064923', 1205337600, 'JP5209349B2', 1370966400, 1254326400, NULL, 1362067200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 11, 0, 0, 0, 5, NULL, '863', NULL, '長谷川 直也', NULL, 'JP1987074048A | JP1989117303A | JP2005268538A | JP2006100847A | JP2006295140A | JP2006303433A | JP2006303436A | JP2007287874A | JP2007287875A | JP2008147634A | WO2006043348A1', NULL, 'K. T. Park他、「Nd-Fe-B薄膜焼結磁石の保磁力への金属被覆と加熱の効果」、第16回希土類磁石とその応用に関する国際会議会議録、社団法人日本金属学会発表、2000年、第257-264頁(K. T. Park et al., \"Effect of Metal-Coating and Consecutive Heat Treatment on Coercivity of Thin Nd-Fe-B Sintered Magnets\", Proceeding of the Sixteenth International Workshop on Rare-Earth Magnets and their Applications (2000), pp. 257-264.) | 廣田晃一 他、「粒界拡散法によるNd-Fe-B系焼結磁石の高保磁力化」、粉体粉末冶金協会平成17年春季大会講演概要集、粉体粉末冶金協会発行、第143頁 | 町田憲一 他、「Nd-Fe-B系焼結磁石の粒界改質と磁気特性」、粉体粉末冶金協会平成16年春季大会講演概要集、粉体粉末冶金協会発行、1-47A | 町田憲一 他、「粒界改質型Nd-Fe-B系焼結磁石の磁気特性」、粉体粉末冶金協会平成17年春季大会講演概要集、粉体粉末冶金協会発行、第144頁 | 石垣尚幸 他、「ネオジム系微小焼結磁石の表面改質と特性向上」、NEOMAX技報、株式会社NEOMAX発行、2005年、第15巻、第15-19頁', 1, '\\20220510\\93a3d783b4654db9a1a9b59ac8e1a3c1.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39322, 39324, 39323, 5);
INSERT INTO `os_patent` VALUES (22994, 'Permanent magnet motor having composite magnets and manufacturing method thereof', '具有复合磁体的永磁电机及其制造方法', 'US8421292B2', 'A permanent magnet motor includes: a rotor and a stator; and a plurality of permanent magnets placed on either the rotor or the stator. Each permanent magnet is an R—Fe—B based rare-earth sintered magnet including a light rare-earth element RL (at least one of Nd and Pr) as a major rare-earth element R, and partially includes a high coercivity portion in which a heavy rare-earth element RH (at least one element selected from the group consisting of Dy, Ho and Tb) is diffused in a relatively higher concentration than in the other portion.', '永磁电动机包括：转子和定子;多个永久磁铁放置在转子或定子上。每个永磁体是基于R-Fe-B的稀土烧结磁体，其包括作为主要稀土元素R的轻稀土元素RL（Nd和Pr中的至少一种），并且部分地包括高矫顽力部分。其中重稀土元素RH（选自Dy，Ho和Tb中的至少一种元素）以比其它部分相对更高的浓度扩散。', 'US12/593107', 1206374400, 'US8421292B2', 1366041600, 1273075200, NULL, 1366041600, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 17, 3, 0, 0, 0, NULL, NULL, NULL, '2007081263', 'JP', 1174924800, 9, 73, NULL, NULL, 22, 5, 1, 1, 5, NULL, '869', NULL, 'NGUYEN, TRAN N.', 'KENERLY, TERRANCE', 'EP1843360A1 | JP1982148566A | JP1983029358A | JP1983174977A | JP1983174977U | JP1984117281A | JP1984117281U | JP1986059705A | JP1989117303A | JP1993135976A | JP1996340651A | JP2003282213A | US20040145263A1 | US20060213585A1 | US20080286595A1 | US20090020193A1 | US20100219712A1 | US4110718A | US5383978A | US7064465B2 | US7488394B2 | US7843100B2', 'US20110260748A1 | US20120233835A1 | US20170019041A1 | US8572830B2 | US8610452B2', 'Machine translation of JP2003282213, Sagawa, Mar. 2003. | Machine translation of JP2003282213, Sagawa, Mar. 2003. cited by examiner | Official Communication issued in corresponding International Patent Application No. PCT/JP2008/055582 mailed on Oct. 29, 2009. cited by applicant | Partial translation of JP01117303, Kaino et al. May 1989 p. 2 and p. 4. | Partial translation of JP01117303, Kaino et al. May 1989 p. 2 and p. 4. cited by examiner', 1, '\\20220510\\d8df17c38ce245e29ea8ec3dd54e4cd8.png', NULL, NULL, 1, NULL, NULL, 11, NULL, NULL, NULL, 39325, 39327, 39326, 9);
INSERT INTO `os_patent` VALUES (22995, '永久磁石式回転機およびその製造方法', '永磁旋转机及其制造方法', 'JP5310544B2', '本発明による永久磁石式回転機は、ロータ１００およびステータ２００と、ロータ１００およびステータ２００の一方に設けられた複数の永久磁石１２とを備えている。永久磁石１２は、軽希土類元素ＲＬ（ＮｄおよびＰｒの少なくとも１種）を主たる希土類元素Ｒとして含有するＲ−Ｆｅ−Ｂ系希土類焼結磁石であり、重希土類元素ＲＨ（Ｄｙ、Ｈｏ、およびＴｂからなる群から選択された少なくとも１種）が他の部分よりも相対的に高い濃度で拡散された高保磁力部１２ａを部分的に備えている。', '根据本发明的永磁型旋转机包括转子100和定子200,设置在转子100和定子200之一上的多个永磁体12。永磁体12是基于R-Fe-B基稀土烧结磁体,其含有稀土元素R1(Nd和Pr中的至少一种),作为稀土元素R,重稀土元素RH(Dy,Ho并且,Tb至少一种选自其他部分中的至少一个的组,部分地设置有高矫顽力部分12a以相对高的浓度扩散。', 'JP2009509116', 1206374400, 'JP5310544B2', 1381248000, 1279123200, NULL, 1373558400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 3, 0, 0, 0, NULL, NULL, NULL, '2007081263', 'JP', 1174924800, 9, 73, NULL, NULL, 4, 5, 4, 4, 0, NULL, NULL, NULL, '三島木 英宏', NULL, 'JP1982148566A | JP1993135976A | JP1996340651A | WO2006064848A1', 'JP5626226B2 | KR1020180023984A | KR1020180023985A | KR102074281B1 | KR102099168B1', NULL, 1, '\\20220510\\af4ab6d2d7c94b669723678836c5a336.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39325, 39327, 39326, 9);
INSERT INTO `os_patent` VALUES (22996, 'R-T-B-Sintermagnet und Verfahren zur Herstellung desselben', 'R-T-B烧结磁体及其制造方法', 'DE112008000992T5', 'Disclosed is an R-T-B sintered magnet containing both a light rare earth element RL (at least one of Nd and Pr) and a heavy rare earth element RH (at least one of Dy and Tb), and having a main phase of Nd2Fe14B crystal. This magnet internally contains a first region wherein the concentration of the heavy rare earth element RH is zero or relatively low and a second region wherein the concentration of the heavy rare earth element RH is relatively high, and the first region and the second region are joined by sintering.', '本发明公开了一种R-T-B烧结磁体，其包含轻稀土元素RL（Nd和Pr中的至少一种）和重稀土元素RH（Dy和Tb中的至少一种），并且具有Nd2Fe14B晶体的主相。该磁体内部包含第一区域和第二区域，其中重稀土元素RH的浓度为零或相对低，第二区域中重稀土元素RH的浓度相对较高，并且第一区域和第二区域连接在一起通过烧结。', 'DE112008000992', 1207843200, 'DE112008000992T5', 1225900800, 1225900800, NULL, NULL, '德国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'T5', NULL, NULL, 28, 2, 0, 0, 0, NULL, NULL, NULL, '2007106051', 'JP', 1176393600, 8, 8, NULL, NULL, 7, 1, 0, 0, 1, NULL, '852', NULL, NULL, NULL, 'EP1879201A1 | EP1981043A1 | JP1982148566A | JP1984117281A | US5383978A | US6468365B1', 'DE102017223268A1', '2. TENAUD, Ph; LEMAIRE, H.; VIAL, F. Recent improvements in NdFeB sintered magnets. In: Journal of magnetism and magnetic materials, Vol. 101, 1991, Nr. 1-3, S. 328-332', 1, '\\20220510\\a88efaafbf214d4f9fd1d0d23273a552.png', NULL, NULL, 1, NULL, NULL, 15, NULL, NULL, NULL, 39328, 39330, 39329, 8);
INSERT INTO `os_patent` VALUES (22997, 'R-T-B sintered magnet and method for producing the same', 'R-T-B烧结磁铁及其制造方法', 'US8142573B2', 'An R-T-B based sintered magnet includes both a light rare-earth element RL (which is at least one of Nd and Pr) and a heavy rare-earth element RH (which is at least one of Dy and Tb) and Nd2Fe14B type crystals as a main phase. The magnet has a first region, which includes either the heavy rare-earth element RH in a relatively low concentration or no heavy rare-earth elements RH at all, and a second region, which includes the heavy rare-earth element RH in a relatively high concentration. The first and second regions are combined together by going through a sintering process.', 'RTB基烧结磁体包括轻稀土元素RL（其为Nd和Pr中的至少一种）和重稀土元素RH（Dy和Tb中的至少一种）和Nd2Fe14B型晶体作为主要阶段。磁铁具有第一区域和第二区域，第一区域包括相对低浓度的重稀土元素RH或者根本不包含重稀土元素RH，第二区域包括相对较重的稀土元素RH高浓度。通过烧结过程将第一和第二区域组合在一起。', 'US12/595293', 1207843200, 'US8142573B2', 1332777600, 1267027200, NULL, 1332777600, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 2, 0, 0, 0, NULL, NULL, NULL, '2007106051', 'JP', 1176393600, 8, 8, NULL, NULL, 23, 1, 0, 1, 2, NULL, '850', NULL, 'SHEEHAN, JOHN', NULL, 'EP1860668A1 | JP1982148566A | JP1982189274A | JP1982189274U | JP1982189275A | JP1982189275U | JP1983029358A | JP1983174977A | JP1983174977U | JP1984117281A | JP1984117281U | JP1986059705A | JP1999329809A | JP2007258455A | JP2007273815A | US20040020563A1 | US20050098238A1 | US20090019969A1 | US20090020193A1 | US5383978A | US6468365B1 | WO2006098204A1 | WO2006112403A1', 'US9782953B2', 'English translation of Official Communication issued in corresponding International Application PCT/JP2008/000957, mailed on Oct. 22, 2009. cited by other. | Official Communication issued in International Patent Application No. PCT/JP2008/000957, mailed on Jul. 22, 2008.', 1, '\\20220510\\be887a6c60294ea89461b31866a7a80e.png', NULL, NULL, 1, NULL, NULL, 16, NULL, NULL, NULL, 39328, 39330, 39329, 8);
INSERT INTO `os_patent` VALUES (22998, 'R-T-B系焼結磁石およびその製造方法', 'R-T-B系烧结磁铁及其制造方法', 'JP5273039B2', '本発明のR-T-B系焼結磁石は、軽希土類元素RL(NdおよびPrの少なくとも一方)および重希土類元素RH(DyおよびTbの少なくとも一方)の両方を含有し、Nd2Fe14B型結晶を主相とするR-T-B系焼結磁石である。この磁石は、重希土類元素RHの濃度が相対的に低い又はゼロの第1領域と重希土類元素RHの濃度が相対的に高い第2領域とを内部に含み、第1領域と第2領域とが焼結によって結合されている。', '本发明的RTB的烧结磁体含有光稀土元素R1(Nd和Pr)和重稀土元素Rh(Dy和Tb中的至少一种),并且Nd2Fe14b晶体是主阶段RTB。它是一个系统烧结磁铁。该磁体包含具有第一区域的第一区域和第二区域,并且具有相对低浓度的重稀土元素RH或重质稀土元素RH的浓度相对较低的第二区域。通过烧结偶联。', 'JP2009511664', 1207843200, 'JP5273039B2', 1377619200, 1279728000, NULL, 1369324800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 19, 2, 0, 0, 0, NULL, NULL, NULL, '2007106051', 'JP', 1176393600, 8, 8, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '田中 純一', NULL, 'JP1982148566A | JP1984117281U | JP1986059705A | JP2000188213A | WO2006098204A1 | WO2006112403A1', NULL, NULL, 1, '\\20220510\\2bcc2fa8bf574525a7cb4f9fbbe8668e.png', NULL, NULL, 1, NULL, NULL, 16, NULL, NULL, NULL, 39328, 39330, 39329, 8);
INSERT INTO `os_patent` VALUES (22999, 'Method for making ndfeb system sintered magnet', '制造ndfeb系烧结磁体的方法', 'CA2685790C', 'The objective of the present invention is to provide a method for making a NdFeB system sintered magnet, capable of enhancing the effect of increasing the coercive force and preventing the instability of the effects, and in addition, being inexpensive. The method for making a NdFeB system sintered magnet according to the present invention has processes of coating a NdFeB system sintered magnet with a powder containing Dy and/or Tb, then heating the NdFeB system sintered magnet, and thereby diffusing Rh in the powder into the NdFeB system sintered magnet through a grain boundary, and is characterized in that the powder contains 0.5 through 50 weight percent of Al in a metallic state; and the amount of oxygen contained in the NdFeB system sintered magnet is equal to or less than 0.4 weight percent.', '本发明的目的是提供一种制造NdFeB系烧结磁体的方法，该方法能够增强矫顽力的增强效果并防止效果的不稳定性，此外，还便宜。根据本发明的制造NdFeB系烧结磁体的方法包括用含有Dy和/或Tb的粉末涂覆NdFeB系烧结磁体，然后加热NdFeB系烧结磁体，从而将粉末中的Rh扩散到其中的方法。 NdFeB系烧结磁铁通过晶界，其特征在于，粉末含有0.5~50重量％的Al金属状态。并且，NdFeB系烧结磁铁中含有的氧量为0.4重量％以下。', 'CA2685790', 1208707200, 'CA2685790C', 1449504000, 1227110400, NULL, 1449504000, '加拿大', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'C', NULL, NULL, 26, 1, 0, 0, 0, NULL, NULL, NULL, '2007121066', 'JP', 1177948800, 19, 19, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\53b7562766134a72b715f4ded2551c4b.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39331, 39333, 39332, 20);
INSERT INTO `os_patent` VALUES (23000, 'Method for making NdFeB sintered magnet', '钕铁硼烧结磁铁的制作方法', 'US8801870B2', 'The objective of the present invention is to provide a method for making a NdFeB sintered magnet, capable of enhancing the effect of increasing the coercive force and preventing the instability of the effects, and in addition, being inexpensive. The method for making a NdFeB sintered magnet according to the present invention has processes of coating a NdFeB sintered magnet with a powder containing Dy and/or Tb, then heating the NdFeB sintered magnet, and thereby diffusing Rh in the powder into the NdFeB sintered magnet through a grain boundary, and is characterized in that the powder contains 0.5 through 50 weight percent of Al in a metallic state; and the amount of oxygen contained in the NdFeB sintered magnet is equal to or less than 0.4 weight percent.', '本发明的目的是提供一种制造NdFeB烧结磁体的方法，该方法能够增强矫顽力的增强效果并防止效果的不稳定性，此外，还便宜。根据本发明的制造NdFeB烧结磁体的方法具有用含有Dy和/或Tb的粉末涂覆NdFeB烧结磁体，然后加热NdFeB烧结磁体，从而将粉末中的Rh扩散到NdFeB烧结磁体中的工艺。通过晶界，其特征在于粉末含有0.5-50％（重量）的金属铝;并且，NdFeB烧结磁铁中含有的氧量等于或小于0.4％（重量）。', 'US12/595872', 1208707200, 'US8801870B2', 1407772800, 1273680000, NULL, 1407772800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, '2007121066', 'JP', 1177948800, 19, 19, NULL, NULL, 30, 2, 0, 0, 12, NULL, '880', NULL, 'LOUIE, MANDY', NULL, 'BRPI0506147A2 | CN101006534A | CN101110289A | CN1898757A | EP0190461A2 | EP1746611A1 | EP1830371A1 | JP1987074048A | JP1989117303A | JP2004359873A | JP2005294558A | JP2006303197A | JP2006303436A | JP2007053351A | JP2007287875A | KR1020070012256A | KR1020070068302A | US20030079805A1 | US20070017601A1 | US20070071979A1 | US20070240789A1 | US6080245A | WO2006043348A1 | WO2006100968A1 | WO2006112403A1 | WO2008032426A1 | WO2008032667A1', 'US20130171342A1 | US9293252B2', 'Ahmed et al.; \"Ion Vapour Deposition for Corrosion Protection of Permanent Magnets;\" Modem Magnetic Materials. Conference Proceedings, Jun. 20, 1989; pp. 8.3.01-8.3.09. cited by applicant | English translation of JP01117303, recieved Mar. 2013, p. 1-11. | English translation of JP01117303, recieved Mar. 2013, p. 1-11. cited by examiner | Extended European Search Report issued in European Application No. 08751583.9 dated Dec. 14, 2012. cited by applicant | Feb. 7, 2012 Office Action issued in Japanese Application No. 2009-513990 (with translation). | Hirota et al.; \"Ryukai Kakusanho ni yoru Nd-Fe-B Kei Shoketsu Jishaku no Kou Hojiryokuka;\" Abstracts of Autumn Meeting of The Japan Society of Powder and Powder Metallurgy; 2005; p. 143. cited by applicant | Ishigaki et al.; \"Surface Improvements on Magnetic Properties for Small-Sized Nd-Fe-B Sintered Magnets;\" Neomax Technical Report; 2005; pp. 15-19; vol. 15. (w/ Abstract). cited by applicant | Machida et al.; \"Nd-Fe-B Kei Shoketsu Jishaku no Ryukai Kaishitu to Jiki Tokusei;\" Abstracts of Spring Meeting of The Japan Society of Powder and Powder Metallurgy; 2004; p. 1-47A. cited by applicant | Nov. 11, 2013 Office Action issued in Korean Patent Application No. 10-2009-7018637 (with partial translation). cited by applicant. | Nov. 27, 2012 Japanese Office Action issued in Japanese Patent Application No. 2009-513990 (with translation). cited by applicant | Park et al.; \"Effect of Metal-Coating and Consecutive Heat Treatment on Coercivity of Thin Nd-Fe-B Sintered Magnets:\" Proceedings of the 16.sup.th International Workshop on Rare-Earth Magnets and Their Applications; 2000; pp. 257-264; vol. 1. cited by applicant | Sep. 1, 2011 Office Action issued in Chinese Patent Application No. 200880008214.6 (with translation). cited by applicant', 1, '\\20220510\\f860cf72cb9f4d20baef554941920ba9.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 39331, 39333, 39332, 20);
INSERT INTO `os_patent` VALUES (23001, 'NdFeB系焼結磁石製造方法', 'NdFeB系焼结磁石制造方法', 'JP5363314B2', '本発明は、保磁力向上効果をより高め、且つその効果のばらつきを少なくすることができ、しかもコストが低いNdFeB系焼結磁石の製造方法を提供することを目的とする。本発明に係るNdFeB系焼結磁石の製造方法は、Dy又は/及びTbを含む粉末をNdFeB系焼結磁石に塗布した後に加熱することにより、前記粉末中のRhを前記NdFeB系焼結磁石中に粒界を通じて拡散させる工程を有するNdFeB焼結磁石の製造方法において、前記粉末が金属状態のAlを0.5~50重量%含むこと、及び、前記NdFeB焼結磁石中に含まれる酸素量が0.4重量%以下であること、を特徴とする。', '本发明的一个目的是提供一种用于制造基于NDFEB的烧结磁体的方法,其具有改善矫顽力并降低其效果的变化。根据本发明的基于NdFeB的烧结磁体的制造方法是将含有Dy或/和Tb的粉末施加到NdFeB的烧结磁体上,然后在粉末中的Rh在NdFeB的烧结磁体中。在制造具有通过晶界扩散步骤的NdFeB烧结磁体的方法中,在金属状态下含有0.5至50重量%的氧气量,并且NdFeB烧结磁体中所含的氧量为0.4重量。它的特征在于它为%或更少。', 'JP2009513990', 1208707200, 'JP5363314B2', 1386691200, 1280332800, NULL, 1379001600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, '2007121066', 'JP', 1177948800, 19, 19, NULL, NULL, 12, 0, 0, 0, 5, NULL, '863', NULL, '池田 安希子', NULL, 'JP1987074048A | JP1989117303A | JP2005294558A | JP2006303197A | JP2006303436A | JP2007053351A | JP2007287875A | WO2006043348A1 | WO2006100968A1 | WO2006112403A1 | WO2008032426A1 | WO2008032667A1', NULL, 'K. T. Park 他、「Nd-Fe-B薄膜焼結磁石の保磁力への金属被覆と加熱の効果」、第16回希土類磁石とその応用に関する国際会議会議録、社団法人日本金属学会発行、2000年、第257-264頁(K. T. Park et al., \"Effect of Metal-Coating and Consecutive Heat Treatment on Coercivity of Thin Nd-Fe-B Sintered Magnets\", Proceedings of the Sixteenth International Workshop on Rare-Earth Magnets and Their Applications (2000), pp. 257-264.) | 廣田晃一 他、「粒界拡散法によるNd-Fe-B系焼結磁石の高保磁力化」、粉体粉末冶金協会平成17年春季大会講演概要集、粉体粉末冶金協会発行、第143頁 | 町田憲一 他、「Nd-Fe-B系焼結磁石の粒界改質と磁気特性」、粉体粉末冶金協会平成16年春季大会講演概要集、粉体粉末冶金協会発行、1-47A | 町田憲一 他、「粒界改質型Nd-Fe-B系焼結磁石の磁気特性」、粉体粉末冶金協会平成17年春季大会講演概要集、粉体粉末冶金協会発行、第144頁 | 石垣尚幸 他、「ネオジム系微小焼結磁石の表面改質と特性向上」、NEOMAX技報、株式会社NEOMAX発行、2005年、第15巻、第15-19頁', 1, '\\20220510\\ae196afb14524f4c965f9cdf0c1f9e01.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39331, 39333, 39332, 20);
INSERT INTO `os_patent` VALUES (23002, 'R-Fe-B based sintered magnet having on the surface thereof vapor deposited film of aluminum or alloy thereof, and method for producing the same', '表面具有铝或其合金的蒸镀膜的R-Fe-B系烧结磁铁及其制造方法', 'US8163106B2', 'An R—Fe—B sinlered magnet having on the surface thereof a vapor deposited film of aluminum or an alloy thereof and a method for producing the same. The vapor deposited film of aluminum or an alloy thereof comprises a columnar crystalline structure grown broader from the surface of the R—Fe—B sintered magnet body outward to the outer surface, which has a part within a region defined in the thickness direction of the film as taken from the surface of the R—Fe—B sintered magnet to ⅓ of the film thickness, 5 to 30 intercrystalline gaps of 0.01 μm to 1 μm in width as counted per 10 μm length in the lateral direction of the film. The method comprises controlling the average film formation rate such that it is slower up to a predetermined point and then is speeded up later thereon.', '一种R-Fe-B烧结磁体，其表面上具有铝或其合金的气相沉积膜及其制造方法。铝或其合金的气相沉积膜包括从R-Fe-B烧结磁体的表面向外扩展到外表面的柱状晶体结构，其具有在厚度方向上限定的区域内的部分。从R-Fe-B烧结磁体表面取出的膜厚度为膜厚的1/3，在膜的横向上每10μm长度计算的宽度为0.01μm至1μm的5至30个晶间间隙。该方法包括控制平均成膜速率，使得它慢到预定点然后在其上加速。', 'US12/599145', 1210262400, 'US8163106B2', 1335196800, 1290614400, NULL, 1335196800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 9, 5, 0, 0, 0, NULL, NULL, NULL, '2007124877', 'JP', 1178640000, 7, 7, NULL, NULL, 11, 6, 2, 6, 1, NULL, '875', NULL, 'SHEEHAN, JOHN', NULL, 'JP2001335921A | JP2002198240A | JP2005105311A | JP2005191276A | JP2005294558A | US20020028361A1 | US20020127337A1 | US20030108673A1 | US6106894A | US6391386B1 | WO2006009137A1', 'CN104651782A | CN104651782B | US10204724B2 | US10208376B2 | US10480057B2 | US9783883B2', 'International Search Report for International Application No. PCT/JP2008/058661 dated Aug. 6, 2008. cited by other.', 1, '\\20220510\\ab68f81b08a94c1eb0913d377a64a2dc.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39334, 39336, 39335, 7);
INSERT INTO `os_patent` VALUES (23003, '表面にアルミニウムまたはその合金の蒸着被膜を有するR-Fe-B系焼結磁石およびその製造方法', 'R-Fe-B基烧结磁体及其制造方法，其表面具有铝或其合金的气相沉积涂膜', 'JP5263153B2', '本発明の課題は、過酷なヒートサイクルテストを行った後でも接着対象との間で優れた接着強度を保持する、表面にアルミニウムまたはその合金の蒸着被膜を有するR-Fe-B系焼結磁石およびその製造方法を提供することである。その解決手段としての本発明の表面にアルミニウムまたはその合金の蒸着被膜を有するR-Fe-B系焼結磁石は、アルミニウムまたはその合金の蒸着被膜が、磁石体表面から外表面に向かって幅広に成長した柱状結晶組織からなり、被膜の厚み方向の磁石体表面から1/3までの領域において、幅0.01μm~1μmの結晶間空隙を被膜の横方向10μmあたり5個~30個存在する部分を有することを特徴とするものである。その製造方法は、R-Fe-B系焼結磁石の表面にアルミニウムまたはその合金の蒸着被膜を形成する際、平均成膜速度を成膜前期と成膜後期で個々に制御し、所定の時点までは遅く、その後は速くすることを特徴とする。', '本发明的目的是一种基于R-Fe-B的烧结磁体,其具有铝或表面上的合金气相沉积涂层,其在苛刻的热循环测试或粘合强度与表面之间保持优异的粘合强度。并提供制造方法。具有铝或合金的基于R-Fe-B的烧结磁体作为本发明的溶液是铝的气相沉积涂层或其合金,其合金的气相沉积涂层朝向来自磁体表面的外表面。在涂层的表面的晶体的水平方向上,在涂层的表面的晶体的水平方向上具有0.01μm至1μm的宽度为0.01μm至1μm的晶体的一部分在生长的柱状结构的区域中,涂层表面的5至30份表面为1/3。它的特征在于具有。在制造方法中,当在R-Fe-B基烧结磁体的表面形成铝的气相沉积或其合金时,平均成膜速率在成膜的前半部分中单独控制成膜和预定时间点,其特征在于速度,直到它快速。', 'JP2009514154', 1210262400, 'JP5263153B2', 1376409600, 1280937600, NULL, 1368115200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 10, 5, 0, 0, 0, NULL, NULL, NULL, '2007124877', 'JP', 1178640000, 7, 7, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '久保田 昌晴', NULL, 'JP2001335921A | JP2002198240A | JP2003224944A | JP2004064895A | JP2005294558A | JP2005310975A | WO2006009137A1', NULL, NULL, 1, '\\20220510\\4f2dc2f3a6af4daa9f62d319c9b5bd53.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39334, 39336, 39335, 7);
INSERT INTO `os_patent` VALUES (23004, 'Rare earth metal-based permanent magnet', '稀土金属基永磁体', 'US9287027B2', 'An objective of the present invention is to provide a rare earth metal-based permanent magnet with improved adhesion properties. A rare earth metal-based permanent magnet of the present invention as a means for achieving the objective has a laminated plating film, and is characterized in that the plating film comprises as an outermost surface layer a SnCu alloy plating film having a film thickness in a range from 0.1 μm to 2 μm, the composition of the SnCu alloy plating film is 35 mass % or more but less than 55 mass % of Sn and the rest being Cu, and a base plating film having two or more layers including at least a Ni plating film and a Cu plating film which are formed as the lower layer under the SnCu alloy plating film, and among the base plating film, the Ni plating film is located just below the SnCu alloy plating film. A joined structure fabricated using the rare earth metal-based permanent magnet of the present invention exhibits favorable initial adhesion strength when combined with a silicone-based adhesive, and is less deteriorated in adhesion strength even after a moisture resistance test.', '本发明的目的是提供一种具有改善的粘合性能的稀土金属基永磁体。作为实现目的的手段的本发明的稀土金属基永磁体具有层压镀膜，其特征在于，镀膜包括具有膜厚度的SnCu合金镀膜作为最外表面层。在0.1μm至2μm的范围内，SnCu合金镀膜的组成为35质量％以上但小于55质量％的Sn，其余为Cu，并且具有两层或更多层的基底镀膜至少包括在SnCu合金镀膜下形成下层的Ni镀膜和Cu镀膜，在基底镀膜中，Ni镀膜位于SnCu合金镀膜的正下方。使用本发明的稀土金属基永磁体制造的接合结构在与硅氧烷基粘合剂组合时显示出良好的初始粘合强度，并且即使在耐湿性测试之后粘合强度也较少劣化。', 'US12/990341', 1210694400, 'US9287027B2', 1457971200, 1297872000, NULL, 1457971200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 9, 9, NULL, NULL, 18, 4, 2, 2, 1, NULL, '875', NULL, 'RUTHKOSKY, MARK', 'CHAU, LISA', 'JP1989321610A | JP1996154351A | JP2002329627A | JP2003193273A | JP2003257721A | JP2006179801A | JP2007273503A | JP2007273556A | JP2008147642A | JP3972111B2 | JP4033241B2 | US20030052013A1 | US20040137162A1 | US20070269679A1 | US20090035603A1 | US6606019B1', 'US10423003B2 | US20150293372A1 | US20170084372A1 | US9905345B2', 'International Search Report for International Application No. PCT/JP2008/058873 dated Aug. 12, 2008. cited by applicant.', 1, '\\20220510\\5042f945f2ed4acd81239e1e793d5dc4.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39337, 39339, 39338, 9);
INSERT INTO `os_patent` VALUES (23005, '希土類系永久磁石', '希土类系永久磁石', 'JP4241906B1', '本発明の課題は、接着性を改善した希土類系永久磁石を提供することである。その解決手段としての本発明の希土類系永久磁石は、積層めっき皮膜を有する希土類系永久磁石であって、めっき皮膜の最表層が膜厚0.1μm以上2μm以下のSnCu合金めっき皮膜であり、前記SnCu合金めっき皮膜の組成は、Snが35mass%以上55mass%未満で残部がCuであり、前記SnCu合金めっき皮膜の下層にNiめっき皮膜およびCuめっき皮膜を少なくとも含む2層以上の下地めっき皮膜を有し、前記下地めっき皮膜のうちSnCu合金めっき皮膜の直下はNiめっき皮膜であることを特徴とする。本発明の希土類系永久磁石を用いて作製した接合構造体は、シリコーン系接着剤との組み合わせにおいて、良好な初期接着強度を持ち、耐湿性試験後においても接着強度の低下が少ない。', '本发明的目的是提供一种具有改善的粘合性的稀土永磁体。本发明的稀土基永磁体作为溶液装置是具有层压电镀膜的稀土基永磁体,电镀膜的最外层是膜厚度为0.1μm的SNCU合金电镀膜或者更高,2μm或更小,并且SNCU合金镀膜的组成在低于35质量%或更高且小于55质量%的Cu,并且剩余部分是Cu并具有两个或更多个底电镀在SnCU合金电镀膜的下层中含有至少Ni镀膜和Cu电镀膜的膜。在亚洲粘合膜中,其特征在于它是紧邻SNCU合金电镀膜下方的Ni电镀膜。使用本发明的稀土永磁体制造的粘合结构具有良好的初始粘合强度与硅氧烷基粘合剂,甚至在防潮试验之后,粘合强度降低。', 'JP2008548380', 1210694400, 'JP4241906B1', 1237305600, 1237305600, NULL, 1231430400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 21, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 9, 9, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '酒井 朋広', NULL, NULL, NULL, NULL, 1, '\\20220510\\e667075a04ae4c56ae7f12a3817d6135.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39337, 39339, 39338, 9);
INSERT INTO `os_patent` VALUES (23006, '발명의 명칭 희토류계 영구자석', '发明名称稀土永磁体', 'KR101555730B1', '본 발명의 과제는, 접착성을 개선한 희토류계 영구자석을 제공하는 것이다. 그 해결 수단으로서의 본 발명의 희토류계 영구자석은, 적층 도금 피막을 가진 희토류계 영구자석으로서, 도금 피막의 최표층이 막두께 0.1㎛ 이상2㎛ 이하의 SnCu 합금 도금 피막이고, 상기 SnCu 합금 도금 피막의 조성은 Sn가 35mass%이상 55mass%미만이며잔부가 Cu이고, 상기 SnCu 합금 도금 피막의 하층에 Ni 도금 피막 및 Cu 도금 피막을 적어도 포함한 2층 이상의바탕 도금 피막을 가지며, 상기 바탕 도금 피막 중 SnCu 합금 도금 피막의 바로 아래는 Ni 도금 피막인 것을 특징으로 한다. 본 발명의 희토류계 영구자석을 이용하여 제작한 접합 구조체는, 실리콘계 접착제와의 조합에 있어서, 양호한 초기 접착 강도를 가지며, 내습성 시험 후에도 접착 강도의 저하가 적다.', '本发明的主题是提供改善粘合性能的稀土永磁。作为解决问题的手段的本发明的稀土永磁体是SnCu合金电镀薄膜的下层中的Ni镀层和天然配置镀层中的SnCu合金电镀薄膜，下部是镀Ni的在镀层的最上表面上的层是在膜厚0.1㎛上小于2㎛的SnCu合金镀层，作为具有层压镀层的稀土永磁体。使用本发明的稀土永磁体制成的耦合结构对于与硅基粘合剂的组合具有良好的初始粘合强度，并且在静置湿度试验后需要低的剥离强度降低。', 'KR1020107028129', 1210694400, 'KR101555730B1', 1443110400, 1299168000, NULL, 1442505600, '韩国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 18, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 9, 9, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2001078402A | JP2002327278A | JP2007273503A | KR1020020029944A', NULL, NULL, 1, '\\20220510\\89d5d3bb85e34516a83b90eee065005c.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39337, 39339, 39338, 9);
INSERT INTO `os_patent` VALUES (23007, 'RL-RH-T-Mn-B系焼結磁石', 'RL-RH-T-Mn-B系焼结磁石', 'JP5120710B2', '【課題】R-T-B系焼結磁石において、RH元素が1.5原子%以上含まれる組成において、RH元素の置換量から期待される保磁力を得る。\n\n【解決手段】RL:6原子%以上、14.5原子%以下、ここでRLは、Pr、Ndのうち1種または2種、RH:1.5原子%以上、6原子%以下、ここでRHは、Tb、Dyのうち1種または2種、かつ12原子%≦(RL+RH)≦16原子%、B:5.5原子%以上、6.5原子%以下、Mn:0.04原子%以上、0.2原子%未満、M:2原子%以下(0原子%を含む)、ここでMは、Al、Ti、V、Cr、Ni、Zn、Cu、Ga、Zr、Nb、Mo、Ag、In、Sn、Hf、Ta、W、Au、Pb、Biのうち、1種または2種以上、T:残部、ここでTは、FeまたはFeとCoであり、FeとCoの場合はCoはTのうち20原子%以下、からなる、RL-RH-T-Mn-B系焼結磁石。\n\n【選択図】 なし', '要解决的问题：为了获得RH元素的取代量所预期的矫顽力，其中R-T-B基烧结磁体的组成含有≥1.5％原子的RH元素。 ŽSOLUTION：RL-RH-T-Mn-B基烧结磁体含有：6至14.5％原子的RL，RL为Pr和Nd之间的一种或两种; RH为1.5~6％原子，RH为Tb与Dy之间的1种或2种，满足12％原子≤（RL + RH）≤16％原子数; B原子数5.5~6.5％; 0.04至<0.2％原子的Mn; M为2原子％（包括0％原子），M为Al，Ti，V，Cr，Ni，Zn，Cu，Ga，Zr，Nb，Mo，Ag，In中的一种或两种以上， Sn，Hf，Ta，W，Au，Pb和Bi;当T由Fe和Co组成时，T为Fe或Fe，Co和Co在T中≤20％原子。', 'JP2008155474', 1213286400, 'JP5120710B2', 1358265600, 1261584000, NULL, 1351785600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 1, 1, 1, 0, NULL, NULL, NULL, '塩▲崎▼ 義晃', NULL, NULL, 'CN104599801A', NULL, 1, '\\20220510\\370d67b5773c485c9bec0a71df3901f0.png', NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 39340, 39342, 39341, 2);
INSERT INTO `os_patent` VALUES (23008, 'R-Fe-B系希土類焼結磁石およびその製造方法', 'R-Fe-B系稀土烧结磁铁及其制造方法', 'JP4924547B2', '【課題】重希土類元素RHを効率よく活用し、磁石が比較的厚くとも、磁石全体にわたって主相結晶粒の外殻部に重希土類元素RHを拡散させたR-Fe-B系希土類焼結磁石を提供する。\n\n【解決手段】本発明によるR-Fe-B系希土類焼結磁石の製造方法では、まず軽希土類元素RL(NdおよびPrの少なくとも1種)を主たる希土類元素Rとして含有するR2Fe14B型化合物結晶粒を主相として有するR-Fe-B系希土類焼結磁石体を用意する。次に、焼結磁石体の表面に重希土類元素RH(Dy、Ho、およびTbからなる群から選択された少なくとも1種)を供給しつつ、焼結磁石体を加熱し、表面から重希土類元素RHを希土類焼結磁石体の内部に拡散させる。\n\n【選択図】図1', '要解决的问题：提供一种R-Fe-B基稀土烧结磁体，其中有效利用重稀土元素RH，并且重稀土元素RH在整个磁体中的主相晶粒的外壳部分中扩散，即使磁体相对较厚提供。\n\n解决方案：在根据本发明的制备R-Fe-B基稀土烧结磁体的方法中，首先，R  2 含有轻稀土元素RL（Nd和Pr中的至少一种）作为主要稀土元素R， / sub>制备具有B型化合物晶粒作为主相的Fe  14  R-Fe-B稀土烧结磁体。接下来，在将重稀土元素RH（选自Dy，Ho和Tb中的至少一种）供应到烧结磁体的表面的同时，加热烧结磁体和重稀土元素RH进入稀土烧结磁体。\n\n点域1', 'JP2008160814', 1213804800, 'JP4924547B2', 1335283200, 1227110400, NULL, 1329408000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 39, 3, 0, 0, 0, NULL, NULL, NULL, '2006058555 | 2006204847 | 2006204848 | 2006239198 | 2006355280', 'JP | JP | JP | JP | JP', 1141315200, 32, 36, NULL, NULL, 0, 1, 0, 0, 0, NULL, NULL, NULL, '山田 倍司', NULL, NULL, 'US10658107B2', NULL, 1, '\\20220510\\14d67525d35c45fc9d37af5cf2b136b9.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39234, 39236, 39235, 43);
INSERT INTO `os_patent` VALUES (23009, '鉄基希土類系ナノコンポジット磁石粉末の製造方法', '铁基稀土类纳米复合磁铁粉末的制造方法', 'JP4858497B2', '(修正有)\n\n【課題】高性能の鉄基希土類系ナノコンポジット磁石粉末の製造法を提供する。\n\n【解決手段】組成式T100-x-y-z-nQxRyTizMn(TはFe、Feの一部がCoおよびNiからなる群から選択された1種以上の元素で置換された遷移金属元素、QはBおよびCからなる群から選択された少なくとも1種の元素、Rは希土類元素、Mは金属元素)で表現され、組成比率x、y、zおよびnが、それぞれ、5≦x≦10原子%、7≦y≦10原子%、0.1≦z≦5原子%、0≦n≦10原子%を満足する組成を有する合金溶湯を用意する。急冷凝固させ、粗粉砕後、加熱し、コンポジット磁石を作製し、微粉砕を行う。\n\n【選択図】図1', '（经修改）\n\n要解决的问题：提供一种生产高性能铁基稀土基纳米复合磁铁粉末的方法。\n\n解：组成式T  100-xyzn  Q  x  R  y  Ti  z  M  n < （T是Fe，Fe的一部分是被选自Co和Ni中的一种或多种元素取代的过渡金属元素，Q是选自B和C中的至少1种） M是金属元素），组成比x，y，z和n满足5≤x≤10原子％，7≤y≤10原子％，0.1≤z制备≤5原子％，0≤n≤10原子％。将其快速固化，粗粉碎，然后加热以制备复合磁体并精细粉碎。\n\n点域1', 'JP2008162732', 1214150400, 'JP4858497B2', 1326816000, 1232553600, NULL, 1320940800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 17, 2, 0, 0, 0, NULL, NULL, NULL, '2004364544', 'JP', 1103126400, 14, 14, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '山田 正文', NULL, NULL, NULL, NULL, 1, '\\20220510\\ff550eea68b146e4a27dee5d7b9625de.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 39157, 39159, 39158, 15);
INSERT INTO `os_patent` VALUES (23010, 'R-TM-B系ラジアル異方性リング磁石、その製造方法、及びそれを製造するための金型、並びにブラシレスモータ用ロータ', 'R-TM-B系列径向各向异性环形磁铁，其制造方法，用于制造该磁铁的模具，以及用于无刷电动机的转子', 'JP5267459B2', '内面の少なくとも一ヶ所に軸線方向溝部を有するラジアル異方性リング磁石を製造する方法であって、円柱状の磁性コアと、前記溝部に対応する軸線方向突条部を外面に有し、コアの外周に設けられた磁性スリーブと、磁性スリーブとの間にリング磁石を形成するためのキャビティを形成する円筒状外型とからなる金型を使用し、キャビティに入れた磁粉に対してラジアル方向の磁場をかけながら圧縮成型することを特徴とする方法、及び実質的にR-TM-B(ただし、RはYを含む希土類元素の少なくとも1種、TMは遷移金属の少なくとも1種、Bは硼素)からなり、内面の少なくとも一ヶ所に軸線方向溝部を有し、着磁極間の中心線が溝部と重ならないように着磁されたラジアル異方性リング磁石。', '一种制造径向各向异性环磁体的方法,其在内表面的至少一个地方,圆柱形磁芯和与凹槽部分对应的轴向突起部分的轴向槽,以及芯的芯。磁套在外周和圆柱形外模的模具上形成腔体,用于在磁套之间形成环磁体,并且相对于放置在腔体方法中的磁性粉末的径向方向上的径向,其特征在于它是用磁性压缩的压缩场和基本上R-Tm-B(其中R是至少一个,含有Y,Tm,至少一个过渡金属的至少一个稀土元素,B是径向各向异性环磁体,其包括轴方向槽内表面的至少一个地方,以及磁化的径向各向异性环磁体,使得可磁化杆之间的中心线与凹槽重叠。', 'JP2009520582', 1214150400, 'JP5267459B2', 1377014400, 1282752000, NULL, 1368720000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 18, 2, 0, 0, 0, NULL, NULL, NULL, '2007170538 | 2007298547', 'JP | JP', 1182960000, 12, 12, NULL, NULL, 9, 2, 0, 0, 0, NULL, NULL, NULL, '井上 健一', NULL, 'JP1997097731A | JP1997213521A | JP1998177928A | JP1999234930A | JP2002367846A | JP2005108948A | JP2005268385A | JP2005304178A | WO2004077647A1', 'JP2015015381A | JP6322911B2', NULL, 1, '\\20220510\\ca93eb5cf9534fd395b784fd743c450a.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 39343, 39345, 39344, 13);
INSERT INTO `os_patent` VALUES (23011, 'Radially anisotropic ring R-TM-B magnet, its production method, die for producing it, and rotor for brushless motor', '径向各向异性环形R-TM-B磁铁、其生产方法、生产模具及无刷电机转子', 'US8937419B2', 'A method for producing a radially anisotropic ring magnet having at least one axial groove on the inner surface comprises using a die comprising a cylindrical, magnetic core, a magnetic sleeve having an axial ridge in alignment with the groove on the outer surface and disposed on an outer peripheral surface of the core, and an outer, cylindrical die member defining a cavity for forming the ring magnet with the magnetic sleeve, and compression-molding magnet powder charged into the cavity while applying a magnetic field in a radial direction, and a radially anisotropic ring magnet substantially having a composition of R-TM-B, wherein R is at least one of rare earth elements including Y, TM is at least one of transition metals, and B is boron, having at least one axial groove on the inner surface, and magnetized such that centerlines between magnetic poles do not overlap grooves.', '一种用于制造在内表面上具有至少一个轴向凹槽的径向各向异性环形磁体的方法包括使用包括圆柱形磁芯的磁芯，磁性套筒具有与外表面上的凹槽对齐的轴向脊并设置在所述芯的外周表面和外部圆柱形模具构件，所述外部圆柱形模具构件限定用于与所述磁性套筒一起形成所述环形磁体的腔体，并且压缩模制磁体粉末在径向方向上施加磁场的同时充入所述腔体中，并且径向地基本上具有R-TM-B组成的各向异性环形磁体，其中R是包括Y的稀土元素中的至少一种，TM是过渡金属中的至少一种，B是硼，在内部具有至少一个轴向凹槽磁化，使得磁极之间的中心线不与凹槽重叠。', 'US12/666245', 1214150400, 'US8937419B2', 1421683200, 1279728000, NULL, 1421683200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 21, 2, 0, 0, 0, NULL, NULL, NULL, '2007170538 | 2007298547', 'JP | JP', 1182960000, 12, 12, NULL, NULL, 21, 0, 0, 0, 4, NULL, '870', NULL, 'NGUYEN, TRAN', 'QUINONES, JOSE GONZALEZ', 'JP1983181802A | JP1991265102A | JP1994124822A | JP1997045568A | JP1997097731A | JP1997213521A | JP1998177928A | JP1998201152A | JP1999234930A | JP2002367846A | JP2004274859A | JP2005079423A | JP2005108948A | JP2005268385A | JP2005304178A | US20050225190A1 | US20060158292A1 | US2736827A | US4150927A | US4151435A | WO2004077647A1', NULL, 'Chinese Office Action issued Jun. 5, 2012 for corresponding Application No. 200880022498.4. cited by applicant. | MAchine Translation JP2004274859 (2004). cited by examiner | Machine Translation JP10177928 (1998). cited by examiner | Machine Translation JP2005079423 (2005) JP06124822 (2004) and JP2005304178 (2005). cited by examiner', 1, '\\20220510\\de50b80f674a4717a2eec8a72342368d.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 39343, 39345, 39344, 13);
INSERT INTO `os_patent` VALUES (23012, 'R-tm-b radial anisotropic ring magnet, process for production of the same, metal mold for producing the same, and rotor for brushless motor', 'R-tm-b径向各向异性环形磁铁及其制造方法、制造模具及无刷电机转子', 'EP2169693B1', 'A method for producing a radially anisotropic ring magnet having at least one axial groove on the inner surface comprises using a die comprising a cylindrical, magnetic core, a magnetic sleeve having an axial ridge in alignment with the groove on the outer surface and disposed on an outer peripheral surface of the core, and an outer, cylindrical die member defining a cavity for forming the ring magnet with the magnetic sleeve, and compression-molding magnet powder charged into the cavity while applying a magnetic field in a radial direction, and a radially anisotropic ring magnet substantially having a composition of R-TM-B, wherein R is at least one of rare earth elements including Y, TM is at least one of transition metals, and B is boron, having at least one axial groove on the inner surface, and magnetized such that centerlines between magnetic poles do not overlap grooves.', '一种用于制造在内表面上具有至少一个轴向凹槽的径向各向异性环形磁体的方法，该方法包括使用包括圆柱形磁芯的模具，具有与外表面上的凹槽对准并设置在其上的轴向脊的磁性套筒。 芯的外周表面，以及圆柱形的外模件，其限定用于形成具有磁性套筒的环形磁体的腔体，以及在沿径向和径向施加磁场的同时压缩模制装入腔体中的磁体粉末。 基本上具有R-TM-B组成的各向异性环形磁体，其中R是包括Y的稀土元素中的至少一种，TM是过渡金属中的至少一种，并且B是硼，在内部具有至少一个轴向槽 磁化，使磁极之间的中心线不与凹槽重叠。', 'EP2008790565', 1214150400, 'EP2169693B1', 1585065600, 1269964800, NULL, 1585065600, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 26, 2, 0, 0, 0, NULL, NULL, NULL, '2007170538 | 2007298547', 'JP | JP', 1182960000, 12, 12, NULL, NULL, 0, 0, 0, 0, 0, NULL, '861', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\8ffa9297ccd74404b57e7af53848f312.png', NULL, NULL, 1, NULL, NULL, 11, NULL, NULL, '有效:DE | 失效:NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,SE,SI,MC,SK,GB,IE,EE,CH,IS,IT,GR,ES,AT,CZ,PL,RO,LI,NL | 未确认:HU,MT,CY,TR', 39343, 39345, 39344, 13);
INSERT INTO `os_patent` VALUES (23013, 'ANISOTROPER R-TM-B-RADIALRINGMAGNET, VERFAHREN ZU SEINER HERSTELLUNG, METALLFORM ZU SEINER HERSTELLUNG UND ROTOR FÜR EINEN BÜRSTENLOSEN MOTOR', '各向异性R-TM-B径向环磁铁,其制备方法,金属模具为其生产和转子进行无刷电机', 'DE602008062393T2', 'A process for the production of a radial anisotropic ring magnet having an axial groove on the inside face in at least one place, characterized by using a metal mold composed of a cylindrical magnetic core, a magnetic sleeve which has an axial protrusion corresponding to the groove on the outer face and which is set on the outer periphery of the core, and a cylindrical outer die for forming a cavity for forming a ring magnet between the outer die and the magnetic sleeve and compression-molding a magnetic powder put in the cavity while applying a radial magnetic field to the powder; and a radial anisotropic ring magnet which is made substantially of R-TM-B (wherein R is at least one member selected from among rare earth elements including Y; TM is at least one transition metal; and B is boron) and has an axial groove on the inside face in at least one place and which is magnetized in such a way that the center line between magnetic poles does not overlap with the groove.', '一种径向各向异性环形磁铁的制造方法，所述径向各向异性环形磁铁在至少一个位置的内表面上具有轴向凹槽，其特征在于，使用由圆柱形磁芯构成的金属模具，具有与所述凹槽对应的轴向突起的磁性套筒在外表面上并且设置在芯的外周上，以及圆柱形外模，用于形成腔，用于在外模和磁套之间形成环形磁体，并压缩成型放入腔中的磁粉，同时对粉末施加径向磁场;和径向各向异性环形磁体，其基本上由R-TM-B制成（其中R是选自包括Y的稀土元素中的至少一种; TM是至少一种过渡金属;并且B是硼）并且具有轴向在至少一个位置的内表面上的凹槽，其被磁化，使得磁极之间的中心线不与凹槽重叠。', 'DE602008062393', 1214150400, 'DE602008062393T2', 1585065600, 1585065600, NULL, 1585065600, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 36, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '881', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 39346, 39345, 39347, 13);
INSERT INTO `os_patent` VALUES (23014, 'Rare earth magnet and method for producing same', '稀土磁铁及其制造方法', 'US7655325B2', 'A rare-earth magnet includes a magnet body made of an R—Fe—B based rare-earth magnet material (where R is at least one rare-earth element) and a metal film that has been deposited on the surface of the magnet body. The magnet further includes a plurality of reaction layers between the magnet body and the metal film. The reaction layers include: a first reaction layer, which contacts with at least some of R2Fe14B type crystals, included in the magnet body, to have received the rare-earth element that has been included in the R2Fe14B type crystals; and a second reaction layer, which is located between the first reaction layer and the metal film and which has a lower rare-earth element concentration than that of the first reaction layer.', '稀土磁体包括由R-Fe-B基稀土磁体材料（其中R是至少一种稀土元素）制成的磁体和沉积在磁体表面上的金属膜。磁体还包括在磁体和金属膜之间的多个反应层。反应层包括：第一反应层，其与包含在磁体中的至少一些R2Fe14B型晶体接触，以接收包含在R2Fe14B型晶体中的稀土元素;第二反应层，位于第一反应层和金属膜之间，其稀土元素浓度低于第一反应层的稀土元素浓度。', 'US12/145595', 1214323200, 'US7655325B2', 1265040000, 1224086400, NULL, 1265040000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 1, 0, 0, 0, NULL, NULL, NULL, '2005378905', 'JP', 1135699200, 12, 12, NULL, NULL, 24, 0, 0, 0, 3, NULL, '882', NULL, 'RICKMAN, HOLLY', 'CHAU, LISA', 'JP1987074048A | JP1987120002A | JP1988009908A | JP1988009919A | JP1988168009A | JP1996264310A | JP2001093715A | JP2001196209A | JP2002212602A | JP2004304038A | JP2005197280A | JP2005294558A | US20020004141A1 | US20060278517A1 | US20070034299A1 | US4792368A | US4837114A | US5154978A | US5316595A | US5876518A | US6254694B1 | US6287391B1 | US6331214B1 | WO2005093766A1', NULL, 'English translation of the official communication issued in counterpart International Application No. PCT/JP2006/325856, mailed on Jul. 10, 2008. cited by other . | Official Communication issued in International Patent Application No. PCT/JP2006/325856, mailed on Apr. 17, 2007. cited by other . | Official Communication issued in corresponding European Patent Application No. 08843240.0, mailed on Oct. 22, 2009. cited by other.', 1, '\\20220510\\f19a3dfa14414e2eba5a471e4e4c67bd.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39219, 39221, 39220, 13);
INSERT INTO `os_patent` VALUES (23015, 'R-Fe-B系希土類焼結磁石およびその製造方法', 'R-Fe-B系稀土烧结磁铁及其制造方法', 'JP4241890B2', '【課題】重希土類元素RHを効率よく活用し、磁石が比較的厚くとも、磁石全体にわたって主相結晶粒の外殻部に重希土類元素RHを拡散させたR-Fe-B系希土類焼結磁石を提供する。\n\n【解決手段】本発明によるR-Fe-B系希土類焼結磁石の製造方法では、まず軽希土類元素RL(NdおよびPrの少なくとも1種)を主たる希土類元素Rとして含有するR2Fe14B型化合物結晶粒を主相として有するR-Fe-B系希土類焼結磁石体を用意する。次に、焼結磁石体の表面に重希土類元素RH(Dy、Ho、およびTbからなる群から選択された少なくとも1種)を供給しつつ、焼結磁石体を加熱し、表面から重希土類元素RHを希土類焼結磁石体の内部に拡散させる。\n\n【選択図】図1', '要解决的问题：提供一种R-Fe-B稀土烧结磁体，其中重稀土元素RH通过有效利用重稀土元素RH在整个磁体上的主相​​晶粒的外壳部分中扩散即使磁铁比较厚。 ŽSOLUTION：在制备R-Fe-B稀土烧结磁体的方法中，首先制备R-Fe-B稀土烧结磁体，其含有作为主相的R SB 2  Fe  14  B含有轻稀土元素RL（Nd和Pr中的至少一种）作为主要稀土元素R的复合晶粒。之后，重稀土元素RH扩散到其中。通过加热烧结磁体，同时将重稀土元素RH（选自Dy，Ho和Tb中的至少一种物质）供应到烧结磁体的表面，从其表面开始稀土烧结磁体。 Ž', 'JP2008168769', 1214496000, 'JP4241890B2', 1237305600, 1225296000, NULL, 1231430400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 39, 3, 0, 0, 0, NULL, NULL, NULL, '2006058555 | 2006204847 | 2006204848 | 2006239198 | 2006355280', 'JP | JP | JP | JP | JP', 1141315200, 32, 36, NULL, NULL, 0, 3, 0, 2, 0, NULL, NULL, NULL, '酒井 朋広', NULL, NULL, 'CN103377791A | EP2650887A2 | US10074477B2', NULL, 1, '\\20220510\\7d73526979dd4b74ae0dd92e1717e98f.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39234, 39236, 39235, 43);
INSERT INTO `os_patent` VALUES (23016, '발명의 명칭 Ｒ­Ｆｅ­Ｂ계 희토류 소결 자석 및 그 제조 방법', 'RPFEEBB稀土烧结磁体及其制造方法', 'KR101495899B1', '본 발명의 R-Fe-B계 희토류 소결 자석은, 자석체의 표면으로부터 깊이 20㎛ 위치의 R2Fe14B형 화합물 결정립이 외곽부로부터 두께가 1㎚ 이상 2㎛ 이하의 (RL1-xRHx)2Fe14B(0.2≤x≤0.75)층을 갖고 있다. 여기에서, 가벼운 희토류원소 RL은 Nd 및 Pr이 적어도 1종이며, 무거운 희토류 원소 RH는 Dy, Ho, 및 Tb으로 이루어지는 군으로부터 선택된 적어도 1종이다.', '一种R-Fe-B型稀土烧结磁体,其中来自磁体表面的2003BC #m深度的R2FE14B型化合物晶粒具有(RL1-XRHX)2FE14B的外部表层(其中0.2003C#=X003C#= 0.75)具有1nm至203bc #m的厚度(其中R1是选自Nd和Pr之间的至少一个光稀土元素;并且Rh至少是选自Dy的重稀土元素,HO和TB)。', 'KR1020097024737', 1214841600, 'KR101495899B1', 1425225600, 1268150400, NULL, 1424016000, '韩国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 31, 3, 0, 0, 0, NULL, NULL, NULL, '2007174063', 'JP', 1183305600, 16, 16, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2000188213A', NULL, NULL, 1, '\\20220510\\0f3a48dd2b194d32a637cdfd016f8d6a.png', NULL, NULL, 1, NULL, NULL, 18, NULL, NULL, NULL, 39348, 39350, 39349, 19);
INSERT INTO `os_patent` VALUES (23017, 'R-fe-b type rare earth sintered magnet and process for production of the same', 'R-fe-b型稀土烧结磁铁及其制造方法', 'EP2169689B1', 'In an R-Fe-B based rare-earth sintered magnet according to the present invention, at a depth of 20 µm under the surface of its magnet body, crystal grains of an R2Fe14B type compound have an (RL1-xRHx)2Fe14B (where 0.2≦x≦0.75) layer with a thickness of 1 nm to 2 µm in their outer periphery. In this case, the light rare-earth element RL is at least one of Nd and Pr, and the heavy rare-earth element RH is at least one element selected from the group consisting of Dy, Ho and Tb.', '在根据本发明的R-Fe-B基稀土烧结磁体中，在其磁体表面下20μm的深度处，R2Fe14B型化合物的晶粒具有（RL1-xRHx）2Fe14B（其中） 0.2≤x≤0.75）在其外周具有1nm至2μm厚度的层。在这种情况下，轻稀土元素RL是Nd和Pr中的至少一种，重稀土元素RH是选自Dy，Ho和Tb中的至少一种元素。', 'EP2008790126', 1214841600, 'EP2169689B1', 1417536000, 1269964800, NULL, 1417536000, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 40, 3, 0, 0, 0, NULL, NULL, NULL, '2007174063', 'JP', 1183305600, 16, 16, NULL, NULL, 18, 0, 0, 0, 0, NULL, '858', NULL, NULL, NULL, 'EP1993112A1 | JP1987074048A | JP1999017303A | JP2000188213A | JP2004296973A | JP2004304038A | JP2005011973A | JP2005285859A | JP2007258455A | JP2007273815A | JP2007288020A | JP2007288021A | JP2007329331A | US5383978A | WO2006098204A1 | WO2006112403A1 | WO2007088718A1 | WO2007102391A1', NULL, NULL, 1, '\\20220510\\d85035c745fa4074b54e23c01c625874.png', NULL, NULL, 1, NULL, NULL, 17, NULL, NULL, '有效:DE,GB,NL | 失效:NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,HU,SE,SI,MC,SK,IE,EE,CH,MT,IS,IT,GR,ES,AT,CY,CZ,PL,RO,LI,TR', 39348, 39350, 39349, 19);
INSERT INTO `os_patent` VALUES (23018, 'R-Fe-B type rare earth sintered magnet and process for production of the same', 'R-Fe-B型稀土烧结磁体及其制造方法', 'US8187392B2', 'In an R—Fe—B based rare-earth sintered magnet according to the present invention, at a depth of 20 μm under the surface of its magnet body, crystal grains of an R2Fe14B type compound have an (RL1-xRHx)2Fe14B (where 0.2≦x≦0.75) layer with a thickness of 1 nm to 2 μm in their outer periphery. In this case, the light rare-earth element RL is at least one of Nd and Pr, and the heavy rare-earth element RH is at least one element selected from the group consisting of Dy, Ho and Tb.', '在根据本发明的R-Fe-B基稀土烧结磁体中，在其磁体表面下20μm的深度处，R2Fe14B型化合物的晶粒具有（RL1-xRHx）2Fe14B（其中） 0.2≤x≤0.75）在其外周具有1nm至2μm厚度的层。在这种情况下，轻稀土元素RL是Nd和Pr中的至少一种，重稀土元素RH是选自Dy，Ho和Tb中的至少一种元素。', 'US12/666323', 1214841600, 'US8187392B2', 1338220800, 1279728000, NULL, 1338220800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 27, 3, 0, 0, 0, NULL, NULL, NULL, '2007174063', 'JP', 1183305600, 16, 16, NULL, NULL, 25, 5, 3, 3, 2, NULL, '850', NULL, 'SHEEHAN, JOHN', NULL, 'EP1643513A1 | EP1860668A1 | EP1879201A1 | EP1981043A1 | EP1993112A1 | JP1987074048A | JP1989117303A | JP2004296973A | JP2005285859A | JP2007258455A | JP2007273815A | JP2007288020A | JP2007288021A | JP2007329331A | US20060278517A1 | US20070034299A1 | US20080223489A1 | US20080286595A1 | US20090020193A1 | US20100182113A1 | US20100231338A1 | US20110205006A1 | US5383978A | US6468365B1 | WO2007102391A1', 'US10290407B2 | US20120229240A1 | US20130084204A1 | US9468972B2 | US9786419B2', 'English translation of Official Communication issued in corresponding International Application PCT/JP20081001727, mailed on Feb. 4, 2010. | Official Communication issued in International Patent Application No. PCT/JP2008/001727, mailed on Oct. 7, 2008.', 1, '\\20220510\\91777fcd49a8402abdb677c2489f3557.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39348, 39350, 39349, 19);
INSERT INTO `os_patent` VALUES (23019, 'R-Fe-B系希土類焼結磁石およびその製造方法', 'R-Fe-B系稀土烧结磁铁及其制造方法', 'JP5509850B2', '本発明のR-Fe-B系希土類焼結磁石は、磁石体の表面から20μm深さの位置の前記R2Fe14B型化合物結晶粒が、外郭部から厚さが1nm以上2μm以下の(RL1-xRHx)2Fe14B(0.2≦x≦0.75)層を有している。ここで、軽希土類元素RLは、NdおよびPrの少なくとも1種であり、重希土類元素RHは、Dy、Ho、およびTbからなる群から選択された少なくとも1種である。', '本发明的R-Fe-B基射线烧结磁体,R2FE14B型化合物谷物距离磁体表面的20μm深度,厚度为1nm以上且2μm或更小。来自外壳(RL1-XRHX),它具有2Fe14b(0.2≤x≤0.75)层。这里,小稀土元素R1是Nd和Pr中的至少一种,重稀土元素RH是选自Dy,Ho和Tb的组中的至少一种。', 'JP2009521523', 1214841600, 'JP5509850B2', 1401811200, 1282752000, NULL, 1396540800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 35, 3, 0, 0, 0, NULL, NULL, NULL, '2007174063', 'JP', 1183305600, 16, 16, NULL, NULL, 10, 0, 0, 0, 0, NULL, NULL, NULL, '田中 純一', NULL, 'JP1987074048A | JP1989117303A | JP2000188213A | JP2004296973A | JP2004304038A | JP2005011973A | JP2005285859A | WO2006098204A1 | WO2006112403A1 | WO2007088718A1', NULL, NULL, 1, '\\20220510\\64db9a78c1a7478dbd740bee1651d1bb.png', NULL, NULL, 1, NULL, NULL, 18, NULL, NULL, NULL, 39348, 39350, 39349, 19);
INSERT INTO `os_patent` VALUES (23020, 'IMÃ SINTERIZADO DE TERRAS-RARAS À BASE DE R-Fe-B, E MÉTODO PARA SUA PRODUÇÃO', '基于R-Fe-B的稀土资源免疫及生产方法', 'BRPI0813821B1', NULL, '在根据本发明的R-Fe-B基稀土烧结磁体中，在其磁体表面下20μm的深度处，R 2 Fe 14 B型化合物的晶粒具有（RL 1- x RH x）2 Fe 14 B（其中0.2‰| x‰| 0.75）层，在其外周具有1nm至2μm的厚度。在这种情况下，轻稀土元素RL是Nd和Pr中的至少一种，重稀土元素RH是选自Dy，Ho和Tb中的至少一种元素。', 'BRPI0813821', 1214841600, 'BRPI0813821B1', 1533571200, 1420473600, NULL, 1533571200, '巴西', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 0, 3, 0, 0, 0, NULL, NULL, NULL, '2007174063', 'JP', 1183305600, 16, 16, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 39348, 39350, 39349, 19);
INSERT INTO `os_patent` VALUES (23021, 'R-FE-B-SELTENERDGESINTERTER MAGNET UND HERSTELLUNGSVERFAHREN DAFÜR', 'R-Fe-B-稀土烧结磁铁和制造过程', 'DE602008035700T2', 'An R-Fe-B type rare earth sintered magnet in which the R2Fe14B type compound grains present at a depth of 20μm from the surface of the magnet have each an outer skin layer of (RL1-xRHx)2Fe14B (wherein 0.2≤x≤0.75) having a thickness of 1nm to 2μm (wherein RL is at least one light rare earth element selected from between Nd and Pr; and RH is at least one heavy rare earth element selected from the group consisting of Dy, Ho and Tb).', '其中距离磁体表面20μm处存在的R2Fe14B型化合物颗粒的R-Fe-B型稀土烧结磁体各自具有（RL1-xRHx）2Fe14B（其中0.2≤x≤0.75）的外表层），其中，RL是选自Nd和Pr中的至少一种轻稀土元素，RH是选自Dy，Ho和Tb中的至少一种重稀土元素。', 'DE602008035700', 1214841600, 'DE602008035700T2', 1417536000, 1417536000, NULL, 1417536000, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 64, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 39351, 39350, 39352, 19);
INSERT INTO `os_patent` VALUES (23022, 'R-Fe-B系希土類焼結磁石', 'R-Fe-B系希土类焼结磁石', 'JP5532922B2', '本発明のR-Fe-B系希土類焼結磁石は、軽希土類元素Ndを主たる希土類元素Rとして含有するR2Fe14B型化合物結晶粒を主相として有するR-Fe-B系希土類焼結磁石であって、表面から拡散によって前記焼結磁石に導入された重希土類元素RH(RHはDyおよびTbの少なくとも一方)を含有する。粒界のRリッチ相における重希土類元素RHの濃度は、R2Fe14B型化合物結晶粒の表面における重希土類元素RHの濃度よりも低く、R2Fe14B型化合物結晶粒の中心部における重希土類元素RHの濃度よりも高く調整されている。', '本发明的R-Fe-B射线​​烧结磁铁是R-Fe-B型射线烧结磁铁,其具有R2Fe14b型化合物晶粒,其含有稀土元素Nd作为稀土元素R的主阶段。重稀有通过扩散从表面引入烧结磁体中的瓦斯元素Rh(RH是至少一个)。在晶界的R富型晶界相中重型稀土元素RH的浓度低于R2FE14B型化合物晶粒表面的重稀土元素RH的浓度,远比重稀土元素RH的浓度在R2FE14B型化合物晶粒的中心。它调节高。', 'JP2009525275', 1216915200, 'JP5532922B2', 1403625600, 1286985600, NULL, 1399564800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 20, 5, 0, 0, 0, NULL, NULL, NULL, '2007196159', 'JP', 1185465600, 17, 17, NULL, NULL, 19, 0, 0, 0, 0, NULL, NULL, NULL, '田中 純一', NULL, 'JP1987206802A | JP1993047533A | JP2000188213A | JP2001284111A | JP2003213384A | JP2004079922A | JP2005011973A | JP2005209669A | JP2007258455A | JP2007273815A | JP2007288020A | JP2007288021A | JP2007329331A | WO2000006792A1 | WO2002061769A1 | WO2006098204A1 | WO2006112403A1 | WO2007088718A1 | WO2007102391A1', NULL, NULL, 1, '\\20220510\\650afea0b8de4dd79df177ccd54dd968.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39353, 39355, 39354, 19);
INSERT INTO `os_patent` VALUES (23023, 'R-Fe-B RARE EARTH SINTERED MAGNET', 'r-fe-b稀土烧结磁铁', 'ES2563460T3', 'Disclosed is an R-Fe-B rare earth sintered magnet which comprises, as the main phase, an R2Fe14B compound crystal grain containing a light rare earth element Nd as the main rare earth element R. This R-Fe-B rare earth sintered magnet contains a heavy rare earth element RH (RH is at least one of Dy and Tb) introduced therein by diffusion from the surface. The concentration of the heavy rare earth element RH in the R-rich phase at the grain boundary is regulated so that it is lower than the concentration of the heavy rare earth element RH in the surface of the R2Fe14B compound crystal grain, but higher than the concentration of the heavy rare earth element RH in the central portion of the R2Fe14B compound crystal grain.', '公开了一种R-Fe-B稀土烧结磁体,该R-Fe-B稀土烧结磁体包含R2Fe14B复合晶粒作为主相,所述R2Fe14B复合晶粒包含轻稀土元素Nd作为主要稀土元素R。 通过从表面扩散而引入的重稀土元素RH(RH是Dy和Tb中的至少一种)含有RH。 调节晶界处富R相中重稀土元素RH的浓度,使其低于R2Fe14B化合物晶粒表面中重稀土元素RH的浓度,但高于R2Fe14B化合物晶粒表面中的重稀土元素RH的浓度。  R 2 Fe 14 B复合晶粒的中心部分中重稀土元素RH的浓度。', 'ES2008776893', 1216915200, 'ES2563460T3', 1457971200, 1457971200, NULL, 1457971200, '西班牙', NULL, NULL, NULL, NULL, 8, 4, NULL, NULL, NULL, NULL, 'T3', NULL, NULL, 21, 5, 0, 0, 0, NULL, NULL, NULL, '2007196159', 'JP', 1185465600, 17, 17, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\44ceb8a71d7246e4889ab88f86bf11eb.png', NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 39353, 39355, 39354, 19);
INSERT INTO `os_patent` VALUES (23024, 'R-Fe-B rare earth sintered magnet', 'R-Fe-B稀土烧结磁铁', 'US8177921B2', 'An R—Fe—B based rare-earth sintered magnet according to the present invention includes, as a main phase, crystal grains of an R2Fe14B type compound that includes Nd, which is a light rare-earth element, as a major rare-earth element R. The magnet includes a heavy rare-earth element RH (which is at least one of Dy and Tb) that has been introduced through the surface of the sintered magnet by diffusion. The magnet has a region in which the concentration of the heavy rare-earth element RH in a grain boundary R-rich phase is lower than at the surface of the crystal grains of the R2Fe14B type compound but higher than at the core of the crystal grains of the R2Fe14B type compound.', '根据本发明的R-Fe-B基稀土烧结磁体包括作为主相的包含作为轻稀土元素的Nd作为主要稀土的R2Fe14B型化合物的晶粒。磁体包括重稀土元素RH（其为Dy和Tb中的至少一种），其通过扩散通过烧结磁体的表面引入。磁体具有这样的区域，其中晶界富R相中的重稀土元素RH的浓度低于R2Fe14B型化合物的晶粒表面但高于晶粒核的浓度。 R2Fe14B型化合物。', 'US12/670718', 1216915200, 'US8177921B2', 1337011200, 1295452800, NULL, 1337011200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 5, 0, 0, 0, NULL, NULL, NULL, '2007196159', 'JP', 1185465600, 17, 17, NULL, NULL, 31, 2, 1, 1, 3, NULL, '850', NULL, 'SHEEHAN, JOHN', NULL, 'EP0237416A1 | EP1643513A1 | EP1860668A1 | EP1879201A1 | EP1981043A1 | EP1993112A1 | EP2169689A1 | JP1993047533A | JP2001284111A | JP2005209669A | JP2007258455A | JP2007273815A | JP2007288020A | JP2007288021A | JP2007329331A | US20030145910A1 | US20040050454A1 | US20060278517A1 | US20070034299A1 | US20080223489A1 | US20080286595A1 | US20090020193A1 | US20100182113A1 | US20100231338A1 | US20110012699A1 | US20110205006A1 | US5383978A | US6319336B1 | US6468365B1 | US7064642B2 | WO2007102391A1', 'US20120229240A1 | US9299486B2', 'English translation of Official Communication issued in corresponding International Application PCT/JP2008/001996, mailed on Feb. 18, 2010. | Official Communication issued in International Patent Application No. PCT/JP2008/001996, mailed on Nov. 4, 2008. | Official Communication issued in corresponding European Patent Application No. 08776893.3, mailed on Jul. 14, 2011.', 1, '\\20220510\\efb1694b17d24693b732fdb14752b823.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39353, 39355, 39354, 19);
INSERT INTO `os_patent` VALUES (23025, '발명의 명칭 Ｒ－Ｆｅ－Ｂ계 희토류 소결 자석', '发明名称R-Fe-B型稀土烧结磁体', 'KR101474946B1', '본 발명의 R-Fe-B계 희토류 소결 자석은, 경희토류 원소 Nd을 주된 희토류 원소 R로서 함유하는 R2Fe14B형 화합물결정립을 주상으로서 가지는 R-Fe-B계 희토류 소결 자석으로서, 표면으로부터 확산에 의해 상기 소결 자석에 도입된 중희토류 원소 RH(RH는 Dy 및 Tb 중 적어도 일방)를 함유한다. 입계의 R리치상에 있어서의 중희토류 원소RH의 농도는, R2Fe14B형 화합물 결정립의 표면에 있어서의 중희토류 원소 RH의 농도보다 낮고, R2Fe14B형 화합물결정립의 중심부에 있어서의 중희토류 원소 RH의 농도보다 높게 조정되어 있다.', '公开了一种R-Fe-B稀土烧结磁体,其作为主相,作为主相,含有轻稀土元素Nd作为主要稀土元素R的R2Fe14b复合晶粒。该R-Fe-B稀土烧结磁体含有重稀土元素RH(RH是其中引入其中的DY和TB中的至少一个)通过从表面的扩散引入。对晶界的R-富族相的重稀土元素RH的浓度受到调节,使其低于R2FE14B复合晶粒表面的重稀土元素RH的浓度,但高于R2FE14B复合晶粒中央部分中重稀土元素RH的浓度。', 'KR1020097025351', 1216915200, 'KR101474946B1', 1418918400, 1270656000, NULL, 1418572800, '韩国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 18, 5, 0, 0, 0, NULL, NULL, NULL, '2007196159', 'JP', 1185465600, 17, 17, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\d1568c738d374159808c9903fb8d77f1.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39353, 39355, 39354, 19);
INSERT INTO `os_patent` VALUES (23026, 'R-Fe-B ritkaföldfém szinterelt mágnes', 'R-Fe-B是稀土烧结磁铁', 'HUE028707T2', NULL, '根据本发明的R-Fe-B基稀土烧结磁体包括作为主相的包含作为轻稀土元素的Nd的R 2 Fe 14 B型化合物的晶粒作为主相。该磁铁包括重稀土元素RH（其为Dy和Tb中的至少一种），其通过扩散通过烧结磁体的表面引入。磁体具有这样的区域，其中晶界富R相中的重稀土元素RH的浓度低于R 2 Fe 14 B型化合物的晶粒表面但高于核的表面R 2 Fe 14 B型化合物的晶粒结构。', 'HUE08776893', 1216915200, 'HUE028707T2', 1482854400, 1482854400, NULL, NULL, '匈牙利', NULL, NULL, NULL, NULL, 8, 2, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 0, 5, 0, 0, 0, NULL, NULL, NULL, '2007196159', 'JP', 1185465600, 17, 17, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 39353, 39355, 39354, 19);
INSERT INTO `os_patent` VALUES (23027, 'R-Fe-B RARE EARTH SINTERED MAGNET', 'R-Fe-B 稀土烧结磁铁', 'EP2178096B1', 'An R-Fe-B based rare-earth sintered magnet according to the present invention includes, as a main phase, crystal grains of an R2Fe14B type compound that includes Nd, which is a light rare-earth element, as a major rare-earth element R. The magnet includes a heavy rare-earth element RH (which is at least one of Dy and Tb) that has been introduced through the surface of the sintered magnet by diffusion. The magnet has a region in which the concentration of the heavy rare-earth element RH in a grain boundary R-rich phase is lower than at the surface of the crystal grains of the R2Fe14B type compound but higher than at the core of the crystal grains of the R2Fe14B type compound.', '根据本发明的R-Fe-B基稀土烧结磁体包括作为主相的包含作为轻稀土元素的Nd作为主要稀土的R2Fe14B型化合物的晶粒。磁体包括重稀土元素RH（其为Dy和Tb中的至少一种），其通过扩散通过烧结磁体的表面引入。磁体具有这样的区域，其中晶界富R相中的重稀土元素RH的浓度低于R2Fe14B型化合物的晶粒表面但高于晶粒核的浓度。 R2Fe14B型化合物。', 'EP2008776893', 1216915200, 'EP2178096B1', 1450800000, 1271779200, NULL, 1450800000, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 21, 5, 0, 0, 0, NULL, NULL, NULL, '2007196159', 'JP', 1185465600, 17, 17, NULL, NULL, 22, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, 'EP2169689A1 | JP1975047533A | JP1987206802A | JP2000188213A | JP2001284111A | JP2003213384A | JP2004079922A | JP2005011973A | JP2005209669A | JP2007258455A | JP2007273815A | JP2007288020A | JP2007288021A | JP2007329331A | US20060278517A1 | WO2000006792A1 | WO2002061769A1 | WO2006098204A1 | WO2006112403A1 | WO2007088718A1 | WO2007102391A1', NULL, NULL, 1, '\\20220510\\d9529ece3afa495591de11978f23597d.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, '有效:DE,FI,BE,FR,HU,SK,GB,IT,ES,CZ,PL,RO,TR,NL | 失效:NO,PT,BG,DK,LT,LU,LV,HR,SE,SI,MC,IE,EE,CH,MT,IS,GR,AT,CY,LI', 39353, 39355, 39354, 19);
INSERT INTO `os_patent` VALUES (23028, 'ÍMÃ SINTERIZADO DE TERRAS-RARAS DE R-FE-B', 'R-FE-B的烧结现在的土地稀缺', 'BRPI0813089B1', 'ímã sinterizado de terras-raras de r-fe- b a presente invenção refere-se a um ímã sinterizado de terras- raras à base de r-fe-8 de acordo com a presente invenção inclui, como uma fase principal, grãos de cristal de um composto do tipo de r2fe148 que inclui nd, o qual é um elemento de terras-raras r leve, como um elemento de terras-raras principal r. o ímã inclui um elemento de terras-raras pesado rh (o qual é pelo menos um dentre dy e tb) que foi introduzido através da superfície do ímã sinterizado por difusão. o ímã tem uma região na qual a concentração do elemento de terras-raras pesado rh em uma fase de fronteira de grão rica em r é mais baixa do que na superfície dos grãos de cristal do composto do tipo de r2fe148, mas mais alta do que no núcleo dos grãos de cristal do composto do tipo de r2fe14b.', '本发明涉及根据本发明的烧结土稀土磁体，其包含作为主相的玻璃颗粒r2fe148型化合物，其包括作为轻稀土元素的nd作为主要稀土元素。磁铁包括重稀土元素（dy和tb中的至少一种），其通过扩散引入烧结磁体的表面。磁体具有这样的区域，其中富r晶界相中的重稀土元素rh的浓度低于r2fe148型化合物的晶粒表面上的浓度，但高于在r2fe14b型化合物的晶粒核心中。', 'BRPI0813089', 1216915200, 'BRPI0813089B1', 1549296000, 1438617600, NULL, 1549296000, '巴西', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 42, 5, 0, 0, 0, NULL, NULL, NULL, '2007196159', 'JP', 1185465600, 17, 17, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 39353, 39355, 39354, 19);
INSERT INTO `os_patent` VALUES (23029, 'Spiekany magnes typu R-Fe-B na bazie pierwiastków ziem rzadkich', 'r-fe-b稀土烧结磁铁', 'PL2178096T3', NULL, '根据本发明的基于R-Fe-B的稀土烧结磁体包括作为主相的包括作为轻稀土元素的Nd的R 2 Fe 14 B型化合物的晶粒作为主相。 磁体包括重稀土元素RH（Dy和Tb中的至少一种），该重稀土元素RH通过扩散通过烧结磁体的表面被引入。 磁体具有这样的区域，在该区域中，富晶界R相中的重稀土元素RH的浓度低于R 2 Fe 14 B型化合物的晶粒表面处的浓度，但高于芯部处的浓度。  R 2 Fe 14 B型化合物的晶粒尺寸。', 'PL2008776893T', 1216915200, 'PL2178096T3', 1467216000, 1467216000, NULL, 1467216000, '波兰', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T3', NULL, NULL, 26, 5, 0, 0, 0, NULL, NULL, NULL, '2007196159 | PCT/JP2008/001996', 'JP | WO', 1185465600, 17, 17, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 39353, 39355, 39354, 19);
INSERT INTO `os_patent` VALUES (23030, 'GESINTERTER R-FE-B-SELTENERDMAGNET', '烧结R-Fe-B稀土磁铁', 'DE602008041682T2', 'Disclosed is an R-Fe-B rare earth sintered magnet which comprises, as the main phase, an R2Fe14B compound crystal grain containing a light rare earth element Nd as the main rare earth element R. This R-Fe-B rare earth sintered magnet contains a heavy rare earth element RH (RH is at least one of Dy and Tb) introduced therein by diffusion from the surface. The concentration of the heavy rare earth element RH in the R-rich phase at the grain boundary is regulated so that it is lower than the concentration of the heavy rare earth element RH in the surface of the R2Fe14B compound crystal grain, but higher than the concentration of the heavy rare earth element RH in the central portion of the R2Fe14B compound crystal grain.', '本发明公开了一种R-Fe-B稀土烧结磁体，其包含作为主相的含有轻稀土元素Nd作为主要稀土元素R的R2Fe14B化合物晶粒。该R-Fe-B稀土烧结磁体含有重稀土元素RH（RH是Dy和Tb中的至少一种），其通过从表面扩散而引入其中。调节晶界处富R相中重稀土元素RH的浓度，使其低于R2Fe14B化合物晶粒表面中重稀土元素RH的浓度，但高于R2Fe14B化合物晶粒中心部分的重稀土元素RH的浓度。', 'DE602008041682', 1216915200, 'DE602008041682T2', 1450800000, 1450800000, NULL, 1450800000, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 36, 5, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 39356, 39355, 39357, 19);
INSERT INTO `os_patent` VALUES (23031, '電磁駆動型アクチュエータ及び電磁駆動型アクチュエータの製造方法', '电磁驱动型致动器和制造电磁驱动型致动器的方法', 'JP5434004B2', '【課題】可動子の大変位が可能なムービングマグネット型の電磁駆動型アクチュエータの提供。\n\n【解決手段】固定部2と、可動子1と、可動子1を固定部2に連結して支持する1又は複数の可撓性の支持部3と、可動子1に形成された永久磁石4と、永久磁石4の周囲に磁界を発生させるコイル5とを備え、コイル5が発生させた磁界により可動子1を変位させる電磁駆動型アクチュエータ。可動子1及び支持部3は、シリコン窒化膜により一体形成されており、永久磁石4は、RE2Fe14BとMとを交互に堆積させた多層膜構造を有する膜状の永久磁石である。但し、REは希土類金属元素の何れか1つ、MはTa,Ti,Nb,Zr及びMoの内の少なくとも1つ。\n\n【選択図】図1', '要解决的问题：提供一种移动磁铁式电磁驱动器执行器，可以实现移动器的大位移。 ŽSOLUTION：电磁驱动执行器包括：固定部分2;搬运工1;支撑动子1的一个或多个柔性支撑部分3连接到固定部分2;永磁体4形成在动子1上;线圈5在永磁铁4周围产生磁场。动子1由线圈5产生的磁场移位。动子1和支撑部分3由氮化硅膜整体形成，永久磁铁磁铁4是具有通过交替堆叠RE  2 ，Fe  14  B和M而形成的多层膜结构的膜状永磁体。然而，RE是稀土中的任何一种金属元素，M是Ta，Ti，Nb，Zr和Mo中的至少一种', 'JP2008195367', 1217260800, 'JP5434004B2', 1393948800, 1265904000, NULL, 1387468800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 5, 0, 0, 0, 2, NULL, NULL, NULL, '森山 拓哉', NULL, 'JP1995175005A | JP2001237119A | JP2001263250A | JP2003215491A | JP2004312818A', NULL, '「社団法人  日本応用磁気学会  第142回研究会資料」7〜12頁 | 「社団法人  電気学会  マグネティックス研究会資料,MAG-02-12(2002)」17〜21頁', 1, '\\20220510\\0af5873521b340e89f0ad185eee64cf3.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39358, 39360, 39359, 2);
INSERT INTO `os_patent` VALUES (23032, '磁気異方性希土類焼結磁石の製造方法及び製造装置', '用于制造磁各向异性稀土烧结磁体的方法和装置', 'JP4819104B2', '【課題】希土類磁石の高性能化に有効な、酸化の程度が低く粉末粒径が小さい極めて活性な粉末を安全に使用できる、磁気異方性希土類焼結磁石の製造方法を提供し、かつ種々の形状の製品を能率よく生産できる方法を提供する。\n\n【解決手段】秤量·充填部41及び高密度化部42において、磁気異方性希土類焼結磁石の原料となる微粉末を所定の密度になるようにモールドに充填し、磁界配向部43においてパルス磁界により微粉末を配向させた後、微粉末をプレスすることなく焼結炉44において焼結する。この方法では量産装置の動作が単純で、囲いを小さくすることができるため、従来の大がかりなプレス装置を用いる方法で問題となっていた粉末の酸化や燃焼の危険性を排除することが可能となる。また平板状、弓形板状磁石等希土類焼結磁石の最重要形状の製品を多数個取りモールドを使用して、能率よく生産できる。\n\n【選択図】図5', '要解决的问题：为了提供一种制造能够有效改善稀土磁体性能的磁各向异性稀土烧结磁体的方法，可以安全地使用氧化度低且粒径小的极活性粉末，可以有效地生产出各种形状的产品。 ŽSOLUTION：在称重/填充部分41和致密化部分42处，模具填充有可用作磁各向异性稀土烧结磁体的材料的细粉末，直到预定密度。在磁场取向部分43处，细粉末通过脉冲磁场取向，然后通过烧结炉44烧结细粉末而不进行任何压制。在该方法中，批量生产设备的操作简单并且外壳可以小型化，因此消除了粉末的氧化和燃烧的风险，这是使用大型压力机的传统方法中的问题。具有最重要形状的稀土烧结磁体的产品，例如平板形/弓形板形磁体，可以通过多腔模具有效地制造。 Ž', 'JP2008201031', 1217779200, 'JP4819104B2', 1322064000, 1225296000, NULL, 1315497600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 34, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, '863', NULL, '田中 純一', NULL, NULL, NULL, NULL, 1, '\\20220510\\04e11f69aef54b0dbd393537a54a130b.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39361, 39363, 39362, 5);
INSERT INTO `os_patent` VALUES (23033, 'Method for making NdFeB sintered magnet and mold for making the same', '钕铁硼烧结磁铁的制作方法及制作模具', 'US9831034B2', 'A mold which is inexpensive and easy to process and does not embrittle. Also provided is a process by which a sintered NdFeB magnet can be produced using the mold without suffering bending or deformation. At least part (e.g., a bottom plate) of the mold is made of a carbon material. Carbon materials have lower friction with a sinter during sintering than metals. The mold hence enables a sintered NdFeB magnet to be produced without suffering the bending or deformation caused by friction due to sintering shrinkage. Carbon materials are inexpensive and easy to process. The mold does not embrittle even when repeatedly used. Such effects can be significantly produced when a carbon material is used as the bottom plate, on which the load of the sinter is imposed during sintering.', '一种价格低廉且易于加工且不易变脆的模具。还提供了一种方法，通过该方法可以使用模具生产烧结的NdFeB磁体而不会发生弯曲或变形。模具的至少一部分（例如，底板）由碳材料制成。在烧结过程中，碳材料与金属相比具有较低的摩擦力。因此，模具能够制造烧结NdFeB磁体，而不会由于烧结收缩引起的摩擦引起弯曲或变形。碳材料便宜且易于加工。即使重复使用，模具也不会变脆。当碳材料用作底板时，可以显着地产生这种效果，在烧结过程中在其上施加烧结物的负荷。', 'US12/673937', 1219161600, 'US9831034B2', 1511798400, 1300896000, NULL, 1511798400, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, '2007214074', 'JP', 1187539200, 15, 15, NULL, NULL, 16, 0, 0, 0, 22, NULL, '880', NULL, 'YANG, JIE', NULL, 'CN1636650A | CN1969347A | JP1995153612A | JP2002371383A | JP2006265601A | JP2007180373A | JP2007180375A | KR1020070043782A | US20020012600A1 | US20020159909A1 | US7045092B2 | US8153047B2 | US8545641B2 | WO2006004014A1 | WO2006046838A1', NULL, 'Apr. 9, 2013 Chinese Office Action and Reason for Rejection issued in Chinese Patent Application No. 200880102582.7 (with translation). cited by applicant | Crystallography and Engineering Properties of Ceramics: Graphite, ASM Handbook, 2002, pp. 1-3. cited by examiner | English Machine Translation of JP 07-153612, Tokuhara et al., dated Jun. 16, 1995. cited by examiner | English Machine Translation of JP 2006-265601, Takebuchi et al., dated Oct. 5, 2006. cited by examiner | English Machine Translation of JP 2007-180375, Sagawa et al., dated Jul. 12, 2007. cited by examiner | Extended European Search Report issued in Application No. 08827794.2 dated Jul. 22, 2011. cited by applicant | Feb. 19, 2015 Canadian Office Action issued in Canadian Patent Application No. 2,696,700. cited by applicant | Feb. 25, 2015 Korean Pretrial Reexamination Report issued in Korean Patent Application No. 10-2010-7004164. cited by applicant | Feb. 9, 2015 Chinese Notification of Reexamination issued in Chinese Patent Application No. 200880102582.7. | Jun. 10, 2015 Office Action issued in Chinese Application No. 200880102582.7. cited by applicant | Jun. 17, 2014 Office Action issued in Korean Patent Application No. 10-2010-7004164 (with translation). cited by applicant | Jun. 18, 2015 Office Action issued in European Patent Application No. 08 827 794.2. cited by applicant | Jun. 5, 2012 Office Action issued in Chinese Patent Application No. 200880102582.7 (with translation). cited by applicant | Machine Translation of JP 2007-180375, Jul. 12, 2007. cited by examiner | Mar. 29, 2011 Office Action issued in Japanese Patent Application No. 2007-214074 (with translation). cited by applicant | Nov. 22, 2016 Office Action issued in Korean Application No. 10-2010-7004164. | Nov. 24, 2014 Korean Office Action issued in Korean Patent Application No. 10-2010-7004164. cited by applicant | Sep. 13, 2017 Office Action issued in European Application No. 16 172 668.2. cited by applicant. | Sep. 27, 2016 Office Action issued in Chinese Application No. 201510524015.2. cited by applicant | Sep. 9, 2016 Extended European Search Report issued in European Application No. 16172668.2. cited by applicant | Special Type of Graphite, Dalian Thrive Metallurgy Import and Export Co., Ltd., 2005, pp. 1-6. cited by examiner | Written Opinion of the International Searching Authority issued in International Application PCT/JP2008/002251 dated Nov. 18, 2008 (with English-language translation). cited by applicant', 1, '\\20220510\\0f3a885cf4c449b587d4abc5694b4d98.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 39291, 39293, 39292, 16);
INSERT INTO `os_patent` VALUES (23034, 'Method for making ndfeb system sintered magnet and mold for making the same', '制造ndfeb系烧结磁体的方法和制造该磁体的模具', 'CA2696700C', 'The objective of the present invention is to provide a method for making a NdFeB system sintered magnet without an occurrence of a curve or deformation, by using a mold which is inexpensive, easy to be machined, and will not be embrittled. The present invention also provides such a mold. In the present invention, at least a part (e.g. a bottom plate 11) in the mold is made of a carbon material. This enables a production of a NdFeB system sintered magnet without an occurrence of a curve or deformation caused by a friction due to a sintering shrinkage, because the friction between a carbon material and a sintered compact in a sintering process is lower than that between metal and a sintered compact. What is more, a carbon material is advantageous in that it is inexpensive, easy to be machined, and will not be embrittled even after repeated uses of the mold. Such effects can be particularly obtained by using a carbon material as the bottom plate 11, which is subjected to the load of the sintered compact in the sintering process.', '本发明的目的是提供一种通过使用廉价，易加工且不会脆化的模具制造NdFeB系烧结磁体而不会发生弯曲或变形的方法。本发明还提供了这种模具。在本发明中，模具中的至少一部分（例如底板11）由碳材料制成。这使得能够制造NdFeB系烧结磁体而不会由于烧结收缩引起的摩擦而产生弯曲或变形，因为烧结过程中碳材料和烧结体之间的摩擦低于金属和金属之间的摩擦。烧结体。而且，碳材料的优点在于它便宜，易于加工，并且即使在重复使用模具后也不会脆化。通过使用碳材料作为底板11可以特别地获得这种效果，底板11在烧结过程中承受烧结体的负荷。', 'CA2696700', 1219161600, 'CA2696700C', 1457971200, 1235577600, NULL, 1457971200, '加拿大', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'C', NULL, NULL, 29, 1, 0, 0, 0, NULL, NULL, NULL, '2007214074', 'JP', 1187539200, 15, 15, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\0a78c3e718af4f64992136b52abfac24.png', NULL, NULL, 1, NULL, NULL, 15, NULL, NULL, NULL, 39291, 39293, 39292, 16);
INSERT INTO `os_patent` VALUES (23035, 'METHOD FOR MAKING NdFeB SINTERED MAGNET AND MOLD FOR MAKING THE SAME', '钕铁硼烧结磁铁的制造方法及其制造模具', 'EP2187410B1', 'The objective of the present invention is to provide a method for making a NdFeB sintered magnet without an occurrence of a curve or deformation, by using a mold which is inexpensive, easy to be machined, and will not be embrittled. The present invention also provides such a mold. In the present invention, at least a part (e.g. a bottom plate 11) in the mold is made of a carbon material. This enables a production of a NdFeB sintered magnet without an occurrence of a curve or deformation caused by a friction due to a sintering shrinkage, because the friction between a carbon material and a sintered compact in a sintering process is lower than that between metal and a sintered compact. What is more, a carbon material is advantageous in that it is inexpensive, easy to be machined, and will not be embrittled even after repeated uses of the mold. Such effects can be particularly obtained by using a carbon material as the bottom plate 11, which is subjected to the load of the sintered compact in the sintering process.', '本发明的目的是提供一种通过使用廉价，易加工且不会脆化的模具制造NdFeB烧结磁体而不会发生弯曲或变形的方法。本发明还提供了这种模具。在本发明中，模具中的至少一部分（例如底板11）由碳材料制成。这使得能够制造NdFeB烧结磁体而不会由于烧结收缩引起的摩擦而引起弯曲或变形，因为烧结过程中碳材料和烧结体之间的摩擦低于金属和金属之间的摩擦。烧结体。而且，碳材料的优点在于它便宜，易于加工，并且即使在重复使用模具后也不会脆化。通过使用碳材料作为底板11可以特别地获得这种效果，底板11在烧结过程中承受烧结体的负荷。', 'EP2008827794', 1219161600, 'EP2187410B1', 1468944000, 1274198400, NULL, 1468944000, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, '2007214074', 'JP', 1187539200, 15, 15, NULL, NULL, 5, 0, 0, 0, 0, NULL, '876', NULL, NULL, NULL, 'JP1995153612A | JP2006265601A | JP2007180375A | WO2006046838A1', NULL, NULL, 1, '\\20220510\\546416da6f4b46248d46184791c903ea.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, '有效:DE | 失效:NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,HU,SE,SI,MC,SK,GB,IE,EE,CH,MT,IS,IT,GR,ES,AT,CY,CZ,PL,RO,LI,TR,NL', 39291, 39293, 39292, 16);
INSERT INTO `os_patent` VALUES (23036, 'PROZESS ZUR HERSTELLUNG EINES GESINTERTEN NDFEB-MAGNETEN UND GUSSFORM ZUR HERSTELLUNG EINES GESINTERTEN NDFEB-MAGNETEN', '制造烧结NdFeB磁体的方法和用于制造烧结NdFeB磁体的模具', 'DE602008045223T2', 'A mold which is inexpensive and easy to process and does not embrittle. Also provided is a process by which a sintered NdFeB magnet can be produced using the mold without suffering bending or deformation. At least part (e.g., a bottom plate (11)) of the mold is made of a carbon material. Carbon materials have lower friction with a sinter during sintering than metals. The mold hence enables a sintered NdFeB magnet to be produced without suffering the bending or deformation caused by friction due to sintering shrinkage. Carbon materials are inexpensive and easy to process. The mold does not embrittle even when repeatedly used. Such effects can be significantly produced when a carbon material is used as the bottom plate (11), on which the load of the sinter is imposed during sintering.', '一种价格低廉且易于加工且不易变脆的模具。还提供了一种方法，通过该方法可以使用模具生产烧结的NdFeB磁体而不会发生弯曲或变形。模具的至少一部分（例如，底板（11））由碳材料制成。在烧结过程中，碳材料与金属相比具有较低的摩擦力。因此，模具能够制造烧结NdFeB磁体，而不会由于烧结收缩引起的摩擦引起弯曲或变形。碳材料便宜且易于加工。即使重复使用，模具也不会变脆。当碳材料用作底板（11）时，可以显着地产生这种效果，在烧结过程中在其上施加烧结物的负荷。', 'DE602008045223', 1219161600, 'DE602008045223T2', 1468944000, 1468944000, NULL, 1468944000, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 23, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '876', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 39364, 39293, 39365, 16);
INSERT INTO `os_patent` VALUES (23037, 'R-Fe-B系異方性焼結磁石', 'R-Fe-B系异方性焼结磁石', 'JP5201144B2', '本発明のR-Fe-B系異方性焼結磁石は、軽希土類元素RL(NdおよびPrの少なくとも1種)を主たる希土類元素Rとして含有するR2Fe14B型化合物を主相として有し、重希土類元素RH(DyおよびTbからなる群から選択された少なくとも1種)を含有するR-Fe-B系異方性焼結磁石であって、主相の結晶格子におけるc軸が所定方向に配向しており、磁石の磁極面から深さ500μmまでの領域において、前記磁極面に平行な面に対するCuKα線を用いたX線回折測定で2θが60.5~61.5°の範囲内に少なくとも2つの回折ピークが観察される部分を含む。', '本发明的R-Fe-B基各向异性烧结磁体具有含有含有迷你稀土元素R1(Nd和Pr中的至少一种)作为主相的R2Fe14b型化合物,以及重稀土。它是一个基于R-Fe-B的各向异性烧结磁体,其含有选自元素RH(Dy和Tb)的至少一种,并且C轴在预定方向上以预定方向定向在主相的晶格中。和在从磁体的磁极表面的磁体区域到深度为500μm,至少两个衍射峰值在60.5至61.5°的范围内,具有X射线衍射测量,使用CUKα辐射与平行于极面的平面。包含观察到的部分。', 'JP2009531110', 1220284800, 'JP5201144B2', 1370361600, 1291824000, NULL, 1361462400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 28, 4, 0, 0, 0, NULL, NULL, NULL, '2007229113', 'JP', 1188835200, 19, 19, NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, '高橋 克', NULL, 'JP1987074048A | JP1998088273A | JP2002299110A | JP2002356701A | JP2004296973A | JP2004304038A | JP2005175138A | JP2005285859A | WO2007102391A1', 'JP5626226B2', NULL, 1, '\\20220510\\fe024aa7ea714155ae9c6d5846ece994.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39366, 39368, 39367, 22);
INSERT INTO `os_patent` VALUES (23038, '발명의 명칭 Ｒ­Ｆｅ­Ｂ계 이방성 소결 자석', '发明名称R', 'KR101474947B1', '본 발명의 R-Fe-B계 이방성 소결 자석은 가벼운 희토류 원소 RL(Nd 및 Pr의 적어도 1종)을 주된 희토류 원소 R로서 함유하는 R2Fe14B형 화합물을 주상으로서 갖고, 무거운 희토류 원소 RH(Dy 및 Tb으로 이루어지는 군으로부터선택된 적어도 1종)를 함유하는 R-Fe-B계 이방성 소결 자석으로서, 주상의 결정 격자에서의 c축이 소정 방향으로배향하고, 자석의 자극면으로부터 깊이 500㎛까지의 영역에서 상기 자극면에 평행한 면에 대한 CuKα선을 이용한X선 회절 측정에서 2θ가 6O.5 내지 61.5°의 범위 내에 적어도 2개의 회절 피크가 관찰되는 부분을 포함한다.', '的R-Fe-B各向异性烧结磁体,它包括作为主相,含有轻稀土类元素(RL)为主要的稀土元素(R)(至少钕和镨的任一)的R2Fe14B型型化合物和含有重稀土类元素(RH)(选自镝和铽组成的组中的至少一种)。在主相中,晶格具有在给定的方向上取向的c轴。当其位于从磁体的磁极的表面的范围内,以从表面50003BC#米的深度,并且是平行于磁极面由X射线衍射法分析了一个CuK03b1的平面#线,它给其包括具有在60.5-61.5°的20398#范围的至少两个衍射峰的部分的衍射图案。', 'KR1020097024735', 1220284800, 'KR101474947B1', 1418918400, 1273593600, NULL, 1418572800, '韩国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 27, 4, 0, 0, 0, NULL, NULL, NULL, '2007229113', 'JP', 1188835200, 19, 19, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\5dd8476b84474934a3758d156b61fb4c.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39366, 39368, 39367, 22);
INSERT INTO `os_patent` VALUES (23039, 'R-Fe-B ANISOTROPIC SINTERED MAGNET', 'r-fe-b各向异性烧结磁体', 'ES2536189T3', 'An R-Fe-B anisotropic sintered magnet which comprises, as the main phase, an R2Fe14B type compound containing a light rare-earth element (RL) (at least either of neodymium and praseodymium) as the main rare earth element (R) and contains a heavy rare-earth element (RH) (at least one member selected from the group consisting of dysprosium and terbium). In the main phase, the crystal lattice has a c-axis oriented in a given direction. When a plane which is located in the range of from the surface of a magnetic pole of the magnet to a depth of 500 [mu]m from the surface and is parallel to the magnetic-pole surface is analyzed by X-ray diffractometry with a CuKa line, it gives a diffraction pattern which includes a part having at least two diffraction peaks in the 2? range of 60.5-61.5 DEG .', '一种R-Fe-B各向异性烧结磁体,其包含R 2 Fe 14 B型化合物作为主相,所述化合物包含轻稀土元素(RL)(钕和ase中的至少一种)作为主要稀土元素(R),并且 包含重稀土元素(RH)(至少一种选自和and)。 在主相中,晶格具有沿给定方向取向的c轴。 当通过X射线衍射法分析位于从磁体的磁极的表面到距该表面的500μm的深度并且与磁极的表面平行的范围内的平面时,用X射线衍射法分析。 在CuKa线中,给出了衍射图,该衍射图包括在2θ内具有至少两个衍射峰的部分。  60.5-61.5度的范围。', 'ES2008829605', 1220284800, 'ES2536189T3', 1432137600, 1432137600, NULL, 1432137600, '西班牙', NULL, NULL, NULL, NULL, 8, 4, NULL, NULL, NULL, NULL, 'T3', NULL, NULL, 30, 4, 0, 0, 0, NULL, NULL, NULL, '2007229113', 'JP', 1188835200, 19, 19, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\15c28f9bb78d403b9d428b204f8a203f.png', NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 39366, 39368, 39367, 22);
INSERT INTO `os_patent` VALUES (23040, 'R-Fe-B anisotropic sintered magnet', 'R-Fe-B各向异性烧结磁铁', 'US8177922B2', 'An R—Fe—B based anisotropic sintered magnet according to the present invention has, as a main phase, an R2Fe14B type compound that includes a light rare-earth element RL (which is at least one of Nd and Pr) as a major rare-earth element R, and also has a heavy rare-earth element RH (which is at least one element selected from the group consisting of Dy and Tb). In the crystal lattice of the main phase, the c-axis is oriented in a predetermined direction. The magnet includes a portion in which at least two peaks of diffraction are observed within a 2θ range of 60.5 degrees to 61.5 degrees when an X-ray diffraction measurement is carried out using a CuK α ray on a plane that is located at a depth of 500 μm or less under a pole face of the magnet and that is parallel to the pole face.', '根据本发明的R-Fe-B基各向异性烧结磁体具有作为主相的R2Fe14B型化合物，其包含作为主要稀有物的轻稀土元素RL（Nd和Pr中的至少一种）。 - 地球元素R，并且还具有重稀土元素RH（其是选自Dy和Tb中的至少一种元素）。在主相的晶格中，c轴沿预定方向取向。磁体包括在60.5度至61.5度的2θ范围内观察到至少两个衍射峰的部分，当在位于深度的平面上使用CuKα射线进行X射线衍射测量时在磁体的磁极面下方500μm或更小并且平行于磁极面。', 'US12/671915', 1220284800, 'US8177922B2', 1337011200, 1314201600, NULL, 1337011200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 22, 4, 0, 0, 0, NULL, NULL, NULL, '2007229113', 'JP', 1188835200, 19, 19, NULL, NULL, 21, 0, 0, 0, 4, NULL, '850', NULL, 'SHEEHAN, JOHN', NULL, 'EP1643513A1 | EP1993112A1 | JP1987074048A | JP2002299110A | JP2004296973A | JP2005175138A | JP2005285859A | US20050098238A1 | US20060278517A1 | US20080223489A1 | US20080286595A1 | US20090020193A1 | US20100182113A1 | US20100231338A1 | US20110012699A1 | US20110205006A1 | US5383978A | WO2004102391A1 | WO2006112403A1 | WO2007088718A1 | WO2007102391A1', NULL, 'English translation of Official Communication issued in corresponding International Application PCT/JP2008/002399, mailed on Apr. 8, 2010. | Official Communication issued in International Patent Application No. PCT/JP2008/002399, mailed on Oct. 7, 2008. | Official Communication issued in corresponding Chinese Patent Application No. 200880011063, mailed on Jul. 6, 2011. | Official Communication issued in corresponding European Patent Application No. 08829605.8, mailed on Aug. 3, 2011.', 1, '\\20220510\\dd7cfffd30c5427ab9f4de609e62a806.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39366, 39368, 39367, 22);
INSERT INTO `os_patent` VALUES (23041, 'R-fe-b anisotropic sintered magnet', 'R-fe-b各向异性烧结磁铁', 'EP2184747B1', 'An R-Fe-B based anisotropic sintered magnet according to the present invention has, as a main phase, an R2Fe14B type compound that includes a light rare-earth element RL (which is at least one of Nd and Pr) as a major rare-earth element R, and also has a heavy rare-earth element RH (which is at least one element selected from the group consisting of Dy and Tb). In the crystal lattice of the main phase, the c-axis is oriented in a predetermined direction. The magnet includes a portion in which at least two peaks of diffraction are observed within a 2θ range of 60.5 degrees to 61.5 degrees when an X-ray diffraction measurement is carried out using a CuK α ray on a plane that is located at a depth of 500 µm or less under a pole face of the magnet and that is parallel to the pole face.', '根据本发明的R-Fe-B基各向异性烧结磁体具有作为主相的R2Fe14B型化合物，其包含作为主要稀有物的轻稀土元素RL（Nd和Pr中的至少一种）。- 地球元素R，并且还具有重稀土元素RH（其是选自Dy和Tb中的至少一种元素）。在主相的晶格中，c轴沿预定方向取向。磁体包括在60.5度至61.5度的2θ范围内观察到至少两个衍射峰的部分，当在位于深度的平面上使用CuKα射线进行X射线衍射测量时在磁体的磁极面下方500μm或更小并且平行于磁极面。', 'EP2008829605', 1220284800, 'EP2184747B1', 1429632000, 1273593600, NULL, 1429632000, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 30, 4, 0, 0, 0, NULL, NULL, NULL, '2007229113', 'JP', 1188835200, 19, 19, NULL, NULL, 10, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, 'JP1987074048A | JP2002299110A | JP2002356701A | JP2004296973A | JP2004304038A | JP2005175138A | JP2005285859A | US5383978A | WO2007088718A1 | WO2007102391A1', NULL, NULL, 1, '\\20220510\\68a28d2cdea74c8f81dad17e11671a68.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, '有效:DE,FI,BE,PT,FR,HU,SE,SK,GB,IT,ES,AT,CZ,PL,RO,TR,NL | 失效:NO,BG,DK,LT,LU,LV,HR,SI,MC,IE,EE,CH,MT,IS,GR,CY,LI', 39366, 39368, 39367, 22);
INSERT INTO `os_patent` VALUES (23042, 'MAGNETO SINTERIZADO ANISOTRÓPICO BASEADO EM R-FE-B', '基于R-FE-B的各向异性磁铁', 'BRPI0816463A8', NULL, NULL, 'BRPI0816463', 1220284800, 'BRPI0816463A8', 1438012800, 1427126400, NULL, NULL, '巴西', NULL, NULL, NULL, NULL, 3, 2, NULL, NULL, NULL, NULL, 'A8', NULL, NULL, 1, 4, 0, 0, 0, NULL, NULL, NULL, '2007229113', 'JP', 1188835200, 19, 19, NULL, NULL, 0, 0, 0, 0, 0, NULL, '883', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 39366, 39368, 39367, 22);
INSERT INTO `os_patent` VALUES (23043, 'R-Fe-B anizotrop szinterezett mágnes', 'r-fe-b各向异性烧结磁体', 'HUE025146T2', NULL, '本发明的R-Fe-B系各向异性烧结磁体具有包含轻稀土元素RL（Nd和Pr中的至少一种）的R 2 Fe 14 B型化合物作为主相，作为主要的稀土元素R，并且还具有重稀土元素RH（其是选自Dy和Tb中的至少一种元素）。在主相的晶格中，c轴在预定方向上取向。磁体包括在60.5度至61.5度的2θ范围内观察到至少两个衍射峰的部分，当使用CuK±射线在位于深度的平面上进行X射线衍射测量时在磁铁的极面下为500μm以下，与磁极面平行。', 'HUE08829605', 1220284800, 'HUE025146T2', 1453910400, 1453910400, NULL, NULL, '匈牙利', NULL, NULL, NULL, NULL, 8, 2, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 32, 4, 0, 0, 0, NULL, NULL, NULL, '2007229113', 'JP', 1188835200, 19, 19, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 39366, 39368, 39367, 22);
INSERT INTO `os_patent` VALUES (23044, 'ÍMAN SINTERIZADO ANISOTRÓPICO DE R-FE-B', 'ANISOTRÓPICO显示合成R-FE-B', 'PT2184747E', NULL, '根据本发明的R-Fe-B基各向异性烧结磁体具有包含轻稀土元素RL（其为Nd和Pr中的至少一种）的R 2 Fe 14 B型化合物作为主相。作为主要的稀土元素R，还具有重稀土元素RH（其为选自Dy和Tb中的至少一种元素）。在主相的晶格中，c轴沿预定方向取向。当在位于深度的平面上使用CuK±射线进行X射线衍射测量时，磁体包括在60.5度至61.5度的2个范围内观察到至少两个衍射峰的部分。在磁体的磁极面下并且与磁极面平行的500μm或更小。', 'PT2008829605T', 1220284800, 'PT2184747E', 1433088000, 1433088000, NULL, 1433088000, '葡萄牙', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'E', NULL, NULL, 0, 4, 0, 0, 0, NULL, NULL, NULL, '2007229113', 'JP', 1188835200, 19, 19, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 39366, 39368, 39367, 22);
INSERT INTO `os_patent` VALUES (23045, 'Spiekany anizotropowy magnes R-Fe-B', 'r-fe-b各向异性烧结磁体', 'PL2184747T3', NULL, '根据本发明的基于R-Fe-B的各向异性烧结磁体具有R 2 Fe 14 B型化合物作为主相，该化合物包括轻稀土元素RL（其为Nd和Pr中的至少一种）。 作为主要的稀土元素R，还具有重的稀土元素RH（其为选自Dy和Tb中的至少一种元素）。 在主相的晶格中，c轴沿预定方向取向。 磁体包括这样的部分，当使用CuK±射线在位于一定深度的平面上进行X射线衍射测量时，在60.5度至61.5度的2¸范围内观察到至少两个衍射峰。 在磁铁的磁极面下方且平行于磁极面500 µm或更小。', 'PL2008829605T', 1220284800, 'PL2184747T3', 1446134400, 1446134400, NULL, 1446134400, '波兰', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T3', NULL, NULL, 50, 4, 0, 0, 0, NULL, NULL, NULL, '2007229113 | PCT/JP2008/002399', 'JP | WO', 1188835200, 19, 19, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 39366, 39368, 39367, 22);
INSERT INTO `os_patent` VALUES (23046, 'ANISOTROPER GESINTERTER R-FE-B-MAGNET', '各向异性烧结R-Fe B磁铁', 'DE602008037836T2', 'An R-Fe-B anisotropic sintered magnet which comprises, as the main phase, an R2Fe14B type compound containing a light rare-earth element (RL) (at least either of neodymium and praseodymium) as the main rare earth element (R) and contains a heavy rare-earth element (RH) (at least one member selected from the group consisting of dysprosium and terbium). In the main phase, the crystal lattice has a c-axis oriented in a given direction. When a plane which is located in the range of from the surface of a magnetic pole of the magnet to a depth of 500 µm from the surface and is parallel to the magnetic-pole surface is analyzed by X-ray diffractometry with a CuKα line, it gives a diffraction pattern which includes a part having at least two diffraction peaks in the 2θ range of 60.5-61.5°.', '一种R-Fe-B各向异性烧结磁体，其特征在于，以稀土类元素（R）（钕和镨中的至少一种）为主要稀土元素（R）的R 2 Fe 14 B型化合物为主相，含有重稀土元素（RH）（选自镝和铽中的至少一种）。在主相中，晶格具有在给定方向上取向的c轴。当用CuKα线通过X射线衍射法分析位于从磁体的磁极表面到距离表面500μm的深度并且平行于磁极表面的平面时，得到包含在60.5〜61.5°的2θ范围内具有至少2个衍射峰的部分的衍射图案。', 'DE602008037836', 1220284800, 'DE602008037836T2', 1429632000, 1429632000, NULL, 1429632000, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 50, 4, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 39369, 39368, 39370, 22);
INSERT INTO `os_patent` VALUES (23047, '挿入光源', '插入光源', 'JP5105089B2', '【課題】第1磁気回路と第2磁気回路とを空間部を隔てて対向配置させる場合に、空間部に形成される磁場を強くできると共に耐放射線特性を改善する。\n\n【解決手段】周期磁場を形成するための第1磁気回路と、第1磁気回路を支持する第1支持体と、第1磁気回路に対向配置され、周期磁場を形成する第2磁気回路と、第2磁気回路を支持する第2支持体と、対向配置される第1磁気回路と第2磁気回路の間に形成され、電子ビームが通過する空間部と、第1磁気回路と第2磁気回路とを真空封止する真空槽と、第1磁気回路と第2磁気回路を構成する永久磁石を冷却する冷却機構と、第1磁気回路の温度を検出する第1温度センサーと、第1磁気回路を加熱可能な第1ヒーターと、第2磁気回路の温度を検出する第2温度センサーと、第2磁気回路を加熱可能な第2ヒーターと、第1·第2温度センサーによる温度計測データに基づいて、第1·第2ヒーターを制御する温度制御部とを備えている。\n\n【選択図】図1', '要解决的问题：当第一磁路和第二磁路设置成彼此面对并且其间具有空间部分时，为了增强在空间部分中形成的磁场并改善抗辐射特性。\n\n用于形成周期性磁场的第一磁路，用于支撑第一磁路的第一支撑，用于与第一磁路相对并形成周期性磁场的第二磁路，用于支撑第二磁路的第二支撑构件，形成在第一磁路和第二磁路之间的空间部分，电子束穿过第一磁路和第二磁路，第一磁路和第二磁路，用于冷却构成第一磁路和第二磁路的永磁体的冷却机构，用于检测第一磁路的温度的第一温度传感器，第一磁路根据第一和第二温度传感器的第一加热器能够加热，并用于检测所述第二磁路的温度的第二温度传感器，并能够加热所述第二磁路的第二加热器，基于所述温度测量数据以及用于控制第一和第二加热器的温度控制部分。\n\n点域1', 'JP2008240400', 1221753600, 'JP5105089B2', 1355846400, 1231344000, NULL, 1349971200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 5, 0, 0, 0, NULL, NULL, NULL, '2004015878', 'JP', 1074787200, 10, 10, NULL, NULL, 10, 0, 0, 0, 4, NULL, '864', NULL, '山口 敦司', NULL, 'JP1994077049A | JP1996241799A | JP1997190770A | JP1998177900A | JP1999008098A | JP2000206296A | JP2002075699A | JP2002246199A | US4977384A | US5410558A', NULL, 'Construction of an in-vacuum undulator for production of undulator x-rays in the 5-25 keV region.S.Yamamoto,T.Shioya,M.Hara,H.Kitamura,X.W.Zhang,T.Mochizuki,H.Sugiyama and M.Ando;Rev.Sci.Instrum.61(1992)400. | In-vacuum undulators of SPring-8,T.Hara,T.Tanaka,T.Tanabe,X.M.Marechal,S.Okada and H.Kitamura:J.Synchrotron Radiation 5,403(1998) | J. Chavanne et al.,In-vacuum undulators at ESRF,Proceedings of the 2003 Particle Accelerator Conference,2003年,Vol.1,p.253-255 | P. M. Stefan et al.,Initial results from an in-vacuum undulator in the NSLS X-ray ring,J. Synchrotron Rad.,1998年,Vol.5,p.417-419', 1, '\\20220510\\81b7cf092e1347e6b0702b2ad14fe77c.png', NULL, NULL, 2, NULL, NULL, 6, NULL, NULL, NULL, 39117, 39119, 39118, 11);
INSERT INTO `os_patent` VALUES (23048, '표면 개질된 희토류계 소결 자석의 제조 방법 및 표면 개질된 희토류계 소결 자석', '制备表面改性稀有表面烧结磁体和表面处理稀有表面烧结磁体的方法', 'KR101482816B1', '본 발명의 과제는, 습도가 변동하는 환경에서도 충분한 내식성이 산화 열처리에 의해서 부여되고 있는 동시에,산화 열처리에 의한 자기 특성의 저하가 억제된 희토류계 소결 자석 및 그 제조 방법을 제공하는 것이다. 그 해결 수단으로서의 본 발명의 표면 개질된 희토류계 소결 자석은, 표면 개질된 부분이, 자석의 안쪽으로부터 순서대로, R, Fe, B 및 산소를 함유한 주층, 적어도 R, Fe 및 산소를 함유한 비정질층, 헤마타이트를 주체로 하는 산화철을 구성 성분으로서 함유한 최표층의 적어도 3층을 가지는 표면 개질층으로 이루어지는 것을 특징으로 하고,2 5\n\n그 제조 방법은, 자석체에 대해, 산소 분압이 1×10 Pa∼1×10 Pa이고 수증기 분압이 0.1Pa∼1000Pa(다만 1000Pa를 제외함)의 분위기하에서, 200℃∼600℃에서 열처리를 행하는 공정을 포함하여 이루어지는 것을 특징으로 하는것이다.', '本发明提供一种稀土烧结磁体,其通过将热处理氧化到这种水平而改善耐腐蚀性,即使在不同湿度的气氛中表现出令人满意的耐腐蚀性,并且由于氧化热处理而降低磁特性的劣化和生产磁铁的过程。其特征在于表面改性的稀土烧结磁体,其特征在于表面改性部分是至少三层表面改性层,其包括含有R,Fe,B和氧的主层,含有至少R,Fe和氧的非晶层,以及含有赤铁矿氧化铁氧化物作为主要成分的最外层,从磁铁内部均匀;和制造磁体的方法,其特征在于,包括使磁体主体在1×102至1×105Pa的氧分压的气氛中进行热处理的步骤,以及0.1至1000Pa的水蒸气部分压力(不包括1000Pa)200至600°C。', 'KR1020107008377', 1222358400, 'KR101482816B1', 1421164800, 1277827200, NULL, 1420646400, '韩国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 15, 3, 0, 0, 0, NULL, NULL, NULL, '2007252624 | 2008091830', 'JP | JP', 1190822400, 14, 14, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2005285793A | JP2005286031A | JP2007207936A | JP2008244126A', NULL, NULL, 1, '\\20220510\\8c3f0cc71e0f4de3891805932749aed5.png', NULL, NULL, 1, NULL, NULL, 15, NULL, NULL, NULL, 39371, 39373, 39372, 16);
INSERT INTO `os_patent` VALUES (23049, 'Method for producing surface-modified rare earth metal-based sintered magnet and surface-modified rare earth metal-based sintered magnet', '表面改性稀土金属基烧结磁铁的制造方法及表面改性稀土金属基烧结磁铁', 'US9175376B2', 'An objective of the present invention is to provide a rare earth metal-based sintered magnet having imparted thereto sufficient corrosion resistance by an oxidative heat treatment, which is resistant even in an environment of fluctuating humidity, while suppressing the deterioration of the magnetic characteristics ascribed to the oxidative heat treatment, and to provide a method for producing the same. As a means of achieving the objective above, the surface-modified rare earth metal-based sintered magnet of the present invention is characterized in that the surface-modified part comprises a surface-modified layer comprising at least three layers formed in this order from the inner side of the magnet, a main layer containing R, Fe, B, and oxygen, an amorphous layer containing at least R, Fe, and oxygen, and an outermost layer containing iron oxide comprising mainly hematite as the constituent, and the method for producing the same is characterized in that it comprises a step of applying a heat treatment to a bulk magnet body in the temperature range of from 200° C. to 600° C., under an atmosphere with oxygen partial pressure in a range of from 1×102 Pa to 1×105 Pa and water vapor partial pressure in a range of from 0.1 Pa to 1000 Pa (exclusive of 1000 Pa).', '本发明的一个目的是提供一种稀土金属基烧结磁体，其通过氧化热处理赋予其足够的耐腐蚀性，即使在湿度波动的环境中也是耐受的，同时抑制由于磁性变化导致的磁特性的劣化。氧化热处理，并提供一种制备它的方法。作为实现上述目的的手段，本发明的表面改性的稀土金属基烧结磁体的特征在于，表面改性部分包括表面改性层，该表面改性层包括至少三层，从该层开始依次形成。磁铁的内侧，含有R，Fe，B和氧的主层，含有至少R，Fe和氧的非晶层，以及含有主要包含赤铁矿作为组分的氧化铁的最外层，以及制造它的方法的特征在于它包括在氧气分压为1的气氛下，在200℃至600℃的温度范围内对块体磁体进行热处理的步骤。 ×10  2  Pa至1×10  5  Pa，水蒸气分压在0.1Pa至1000Pa（不包括1000Pa）的范围内。', 'US12/680312', 1222358400, 'US9175376B2', 1446480000, 1286380800, NULL, 1446480000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 3, 0, 0, 0, NULL, NULL, NULL, '2007252624 | 2008091830', 'JP | JP', 1190822400, 14, 14, NULL, NULL, 10, 0, 0, 0, 5, NULL, '875', NULL, 'YANG, JIE', 'SU, XIAOWEI', 'JP2001160508A | JP2005210094A | JP2006049801A | JP2006245064A | JP2007005619A | JP2007207936A | JP2008004907A | JP2008244126A | US20080202642A1 | WO2005096326A1', NULL, 'International European Search Report for counterpart Application No. EP 08833133.5, dated Jun. 19, 2015. cited by applicant. | International Search Report for International Application No. PCT/JP2008/067527 dated Dec. 9, 2008. cited by applicant | Machine Translation of JP 2007-207936, Pub. Aug. 2007. cited by examiner | Machine Translation of JP 2008-244126, Pub. Oct. 2008. cited by examiner | Machine Translation of Japanese Patent Document No. 2006-245064, Pub. Sep. 2006. cited by examiner', 1, '\\20220510\\e13d8772bf284a49ad41804aad01369b.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39371, 39373, 39372, 16);
INSERT INTO `os_patent` VALUES (23050, '表面改質された希土類系焼結磁石の製造方法および表面改質された希土類系焼結磁石', '表面改性稀土类烧结磁铁和表面改性稀土类烧结磁铁的制造方法', 'JP4636207B2', '本発明の課題は、湿度が変動する環境においても十分な耐食性が酸化熱処理によって付与されているとともに、酸化熱処理による磁気特性の低下が抑制された希土類系焼結磁石およびその製造方法を提供することである。その解決手段としての本発明の表面改質された希土類系焼結磁石は、表面改質された部分が、磁石の内側から順に、R、Fe、Bおよび酸素を含む主層、少なくともR、Feおよび酸素を含む非晶質層、ヘマタイトを主体とする酸化鉄を構成成分として含む最表層の少なくとも3層を有する表面改質層からなることを特徴とし、その製造方法は、磁石体に対し、酸素分圧が1×102Pa~1×105Paで水蒸気分圧が0.1Pa~1000Pa(但し1000Paを除く)の雰囲気下、200℃~600℃で熱処理を行う工程を含んでなることを特徴とするものである。', '本发明的目的是提供一种稀土烧结磁体,其中即使在其中在湿度波动的环境中,也可以通过氧化热处理施加足够的耐腐蚀性,以及通过氧化热处理产生磁性特性的方法。它是。本发明的表面改性的稀土基烧结磁体作为溶液的溶液装置,从磁体内部,含有R,Fe,B和氧气的主层,至少r,fe其特征在于,它包括具有至少三层的表面修饰层,其最外层的最外层含有含氧的无定形层和基于赤铁矿作为部件的氧化铁,并且制造其的方法是磁体。它其特征在于,在0.1Pa至1000Pa)的气氛中,水蒸气部分压力为0.1Pa至1000Pa),在0.1Pa至1000Pa(除1000除外)的氧分压下。它是。', 'JP2009534433', 1222358400, 'JP4636207B2', 1298390400, 1296057600, NULL, 1291305600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 3, 0, 0, 0, NULL, NULL, NULL, '2007252624 | 2008091830', 'JP | JP', 1190822400, 14, 14, NULL, NULL, 13, 0, 0, 0, 0, NULL, NULL, NULL, '田中 純一', NULL, 'JP2002057052A | JP2005210094A | JP2006049801A | JP2006156853A | JP2006210864A | JP2006245064A | JP2007005619A | JP2007103523A | JP2007207936A | JP2008004907A | JP2008244126A | WO2005096326A1', NULL, NULL, 1, '\\20220510\\ae647ccd18574691a5ed12fe6c9d4ab2.png', NULL, NULL, 1, NULL, NULL, 14, NULL, NULL, NULL, 39371, 39373, 39372, 16);
INSERT INTO `os_patent` VALUES (23051, 'Process for production of surface-modified rare earth sintered magnets and surface-modified rare earth sintered magnets', '表面改性稀土烧结磁体的制造方法及表面改性稀土烧结磁体', 'EP2197007B1', 'An objective of the present invention is to provide a rare earth metal-based sintered magnet having imparted thereto sufficient corrosion resistance by an oxidative heat treatment, which is resistant even in an environment of fluctuating humidity, while suppressing the deterioration of the magnetic characteristics ascribed to the oxidative heat treatment, and to provide a method for producing the same. As a means of achieving the objective above, the surface-modified rare earth metal-based sintered magnet of the present invention is characterized in that the surface-modified part comprises a surface-modified layer comprising at least three layers formed in this order from the inner side of the magnet, a main layer containing R, Fe, B, and oxygen, an amorphous layer containing at least R, Fe, and oxygen, and an outermost layer containing iron oxide comprising mainly hematite as the constituent, and the method for producing the same is characterized in that it comprises a step of applying a heat treatment to a bulk magnet body in the temperature range of from 200 °C to 600 °C, under an atmosphere with oxygen partial pressure in a range of from 1×102 Pa to 1×105 Pa and water vapor partial pressure in a range of from 0.1 Pa to 1000 Pa (exclusive of 1000 Pa).', '本发明的一个目的是提供一种稀土金属基烧结磁体，其通过氧化热处理赋予其足够的耐腐蚀性，即使在湿度波动的环境中也是耐受的，同时抑制由于磁性变化导致的磁特性的劣化。氧化热处理，并提供一种制备它的方法。作为实现上述目的的手段，本发明的表面改性的稀土金属基烧结磁体的特征在于，表面改性部分包括表面改性层，该表面改性层包括至少三层，从该层开始依次形成。磁铁的内侧，含有R，Fe，B和氧的主层，含有至少R，Fe和氧的非晶层，以及含有主要包含赤铁矿作为组分的氧化铁的最外层，以及制造它的方法的特征在于它包括在氧气分压为1×102的气氛下，在200℃至600℃的温度范围内对块体磁体进行热处理的步骤。 Pa为1×105Pa，水蒸气分压为0.1Pa~1000Pa（不包括1000Pa）。', 'EP2008833133', 1222358400, 'EP2197007B1', 1521561600, 1276617600, NULL, 1521561600, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 18, 3, 0, 0, 0, NULL, NULL, NULL, '2007252624 | 2008091830', 'JP | JP', 1190822400, 14, 14, NULL, NULL, 15, 0, 0, 0, 0, NULL, '874', NULL, NULL, NULL, 'JP2001160508A | JP2002057052A | JP2005210094A | JP2006049801A | JP2006156853A | JP2006210864A | JP2006245064A | JP2007005619A | JP2007103523A | JP2007207936A | JP2008004907A | JP2008244126A | US5383978A | WO2005096326A1', NULL, NULL, 1, '\\20220510\\394545a2a27144afa379d63a40bcfa89.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, '有效:DE,FR,GB,IT | 失效:NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,HU,SE,SI,MC,SK,IE,EE,CH,MT,IS,GR,ES,AT,CY,CZ,PL,RO,LI,TR,NL', 39371, 39373, 39372, 16);
INSERT INTO `os_patent` VALUES (23052, 'MAGNETO SINTERIZADO À BASE DE METAL TERRA RARA COM SUPERFÍCIE MODIFICADA E MÉTODO PARA PRODUÇÃO DE MAGNETO SINTERIZADO À BASE DE METAL TERRA RARA COM SUPERFÍCIE MODIFICADA', '改性的基于表面的稀土金属合成的磁铁和生产改性的基于表面的稀土金属合成的磁铁的方法', 'BRPI0817453B1', 'método para produção de magneto sinterizado à base de metal terra rara com superfície modificada e magneto sinterizado à base de metal terra rara com superfície modificada. a presente invenção refere-se a um objetivo da presente invenção é fornecer um magneto sinterizado à base de metal terra rara tendo transmitida a ele uma resistência à corrosão suficiente por um tratamento térmico oxidante, o qual é resistente mesmo em um ambiente de umidade flutuante, -enquanto suprime a deterioração das características magnéticas relacionadas ao tratamento térmico oxidante, e fornecer um método de produção do mesmo. como meios de alcançar o objetivo acima, o magneto sinterizado à base de metal terra rara com superfície modificada da presente invenção é caracterizado pelo fato de que a parte com superfície modificada compreende uma camada com superfície modificada compreendendo pelo menos três camadas formadas nessa ordem a partir do lado interno do magneto, uma camada principal contendo r, fe, b e oxigênio, uma camada amorfa contendo pelo menos r, fe e oxigênio, e uma camada mais externa contendo óxido de ferro contendo principalmente hematita como constituinte, e o método para produção da mesma é caracterizado pelo fato de que ele compreende uma etapa de aplicação de um tratamento térmico a um corpo de magneto na faixa de temperatura de 200°c a 600°c, sob uma atmosfera com pressão parcial de oxigênio em uma faixa de 1 x 1 02 pa a 1 x 1 05 pa e pressão parcial de vapor d\'água em uma faixa de o, 1 pa a 1000 pa (exclusivo de 1000 pa).', '表面改性稀土金属烧结磁体的生产方法和表面改性稀土金属烧结磁体。本发明的一个目的是提供一种稀土金属基烧结磁体，其通过氧化热处理赋予其足够的耐腐蚀性，该氧化热处理甚至在浮动湿气环境中也具有抗腐蚀性。 -在抑制与氧化热处理有关的磁特性劣化的同时，提供了其制造方法。为了实现上述目的，本发明的表面改性稀土金属基烧结磁体的特征在于，所述表面改性部分包括表面改性层，所述表面改性层包括至少三层，所述至少三层依次形成。在磁体的内侧上，包含r，fe，b和氧的主层，至少包含r，fe和氧的非晶层以及包含主要包含赤铁矿作为成分的氧化铁的外层及其制造方法其特征在于，它包括以下步骤：在氧气分压为1 x 1 02的气氛下，在200°C至600°C的温度范围内对磁体进行热处理。 1 x 10 5 pa，部分水蒸气压力在0，1 pa至1000 pa（仅1000 pa）的范围内。', 'BRPI0817453', 1222358400, 'BRPI0817453B1', 1570464000, 1434384000, NULL, 1570464000, '巴西', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 32, 3, 0, 0, 0, NULL, NULL, NULL, '2007252624 | 2008091830', 'JP | JP', 1190822400, 14, 14, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 39371, 39373, 39372, 16);
INSERT INTO `os_patent` VALUES (23053, 'PROZESS ZUR HERSTELLUNG VON OBERFLÄCHENMODIFIZIERTEN GESINTERTEN SELTENERDMAGNETEN UND OBERFLÄCHENMODIFIZIERTE GESINTERTE SELTENERDMAGNETE', '制备表面改性的烧结稀土磁体和表面改性烧结稀土磁铁的方法', 'DE602008054531T2', 'The invention provides a rare earth sintered magnet which is improved in corrosion resistance by oxidizing heat treatment to such a level as to exhibit satisfactory corrosion resistance even in an atmosphere of varying humidity and which is reduced in the deterioration of magnetic characteristics due to oxidizing heat treatment and a process for the production of the magnet. A surface-modified rare earth sintered magnet characterized in that the surface modified part is an at least three-layered surface modification layer which comprises a main layer containing R, Fe, B and oxygen, an amorphous layer containing at least R, Fe and oxygen, and an outermost layer containing hematite-base iron oxide as the main constituent in this order from the inside of the magnet; and a process for the production of the magnet, characterized by comprising the step of subjecting a magnet body to heat treatment in an atmosphere of oxygen partial pressure of 1 OE102 to 1OE105Pa and water vapor partial pressure of 0.1 to 1000Pa (exclusive of 1000Pa) at 200 to 600°C.', '本发明提供一种稀土类烧结磁铁，其通过氧化热处理提高耐腐蚀性，即使在湿度变化的气氛中也能够发挥良好的耐腐蚀性，并且由于氧化热处理而降低磁特性的劣化以及制造磁铁的方法。一种表面改性稀土烧结磁体，其特征在于，表面改性部分是至少三层表面改性层，其包括含有R，Fe，B和氧的主层，含有至少R，Fe和氧的非晶层。从磁铁内部依次含有赤铁矿 - 基础氧化铁作为主要成分的最外层;以及制造磁铁的方法，其特征在于包括在1OE102至10E105Pa的氧分压和0.1至1000Pa（不包括1000Pa）的水蒸气分压的气氛中对磁体进行热处理的步骤。200至600°C。', 'DE602008054531', 1222358400, 'DE602008054531T2', 1521561600, 1521561600, NULL, 1521561600, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 29, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '855', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 15, NULL, NULL, NULL, 39374, 39373, 39375, 16);
INSERT INTO `os_patent` VALUES (23054, 'R-Fe-B microcrystalline high-density magnet and process for production thereof', 'R-Fe-B微晶高密度磁铁及其制造方法', 'US8128758B2', 'An R—Fe—B based rare-earth alloy powder with a mean particle size of less than about 20 μm is provided and compacted to make a powder compact. Next, the powder compact is subjected to a heat treatment at a temperature of about 550° C. to less than about 1,000° C. within hydrogen gas, thereby producing hydrogenation and disproportionation reactions (HD processes). Then, the powder compact is subjected to another heat treatment at a temperature of about 550° C. to less than about 1,000° C. within either a vacuum or an inert atmosphere, thereby producing desorption and recombination reactions and obtaining a porous material including fine crystal grains, of which the density is about 60% to about 90% of their true density and which have an average crystal grain size of about 0.01 μm to about 2 μm (DR processes). Thereafter, the porous material is subjected to yet another heat treatment at a temperature of about 750° C. to less than about 1,000° C. within either the vacuum or the inert atmosphere, thereby further increasing its density to about 93% or more of their true density and making an R—Fe—B based microcrystalline high-density magnet.', '提供平均粒径小于约20μm的R-Fe-B基稀土合金粉末并压实以制成粉末压块。接下来，在氢气内在约550℃至小于约1,000℃的温度下对粉末压块进行热处理，从而产生氢化和歧化反应（HD工艺）。然后，在真空或惰性气氛中，在约550℃至小于约1,000℃的温度下对粉末压块进行另一热处理，从而产生解吸和再结合反应，并获得包括细孔的多孔材料。晶粒，其密度为其真密度的约60％至约90％，并且具有约0.01μm至约2μm的平均晶粒尺寸（DR工艺）。此后，在真空或惰性气氛中，在约750℃至小于约1,000℃的温度下对多孔材料进行另一热处理，从而进一步将其密度增加至约93％或更高。它们的真密度和制造基于R-Fe-B的微晶高密度磁体。', 'US12/254967', 1224518400, 'US8128758B2', 1330963200, 1233763200, NULL, 1330963200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 34, 4, 0, 0, 0, NULL, NULL, NULL, '2007116661 | 2006324298', 'JP | JP', 1177516800, 12, 24, NULL, NULL, 27, 10, 5, 7, 5, NULL, '850', NULL, 'SHEEHAN, JOHN', NULL, 'EP0411571A2 | EP1830371A1 | JP1990004901A | JP1990039503A | JP1991080508A | JP1991129702A | JP1992165012A | JP1993047528A | JP1994112027A | JP1996107007A | JP1997148163A | JP1997162054A | JP1999195548A | JP2000173810A | JP2001085256A | JP2002075715A | JP2003264115A | JP2004303909A | US20040241034A1 | US20050067052A1 | US4981532A | US5110374A | US5250206A | US5395462A | WO2007102391A1 | WO2007135981A1', 'PH12018000183A1 | US10395823B2 | US10770207B2 | US11270841B2 | US20130049908A1 | US9044834B2 | US9067284B2 | US9095940B2 | US9144865B2 | US9336932B1', 'English translation of the official communication issued in International Application No. PCT/JP2007/072213, mailed on Jun. 11, 2009. cited by other . | Nishiuchi et al.: \"R-Fe-B Porous Magnet and Method for Producing the Same,\" U.S. Appl. No. 12/092,300, filed May 1, 2008. cited by other. | Official Communication issued in corresponding European Patent Application No. 07831943.1, mailed on Oct. 7, 2011. | Official Communication issued in corresponding Japanese Patent Application No. 2008-546943, mailed on Oct. 25, 2011. cited by other . | Yoshimura et al.: \"R-Fe-B Rare Earth Sintered Magnet and Method for Producing Same,\" U.S. Appl. No. 12/092,286, filed May 1, 2008. cited by other .', 1, '\\20220510\\e91f1a98de7e4bc2bd72b2ca7411f1c0.png', NULL, NULL, 1, NULL, NULL, 14, NULL, NULL, NULL, 39376, 39279, 39278, 26);
INSERT INTO `os_patent` VALUES (23055, 'R-Fe-B系希土類焼結磁石', 'R-Fe-B系希土类焼结磁石', 'JP4349471B2', '(修正有)\n\n【課題】重希土類元素RHを効率よく活用し、磁石が比較的厚くとも、磁石全体にわたって主相結晶粒の外殻部に重希土類元素RHを拡散させたR-Fe-B系希土類焼結磁石を提供する。\n\n【解決手段】R-Fe-B系希土類焼結磁石は、軽希土類元素RL(NdおよびPrの少なくとも1種)を主たる希土類元素Rとして含有するR2Fe14B型化合物結晶粒を主相として有し、重希土類元素RH(Dy、Ho、およびTbからなる群から選択された少なくとも1種)を含有する。磁石表面から深さ100μmまでの表層領域において、前記R2Fe14B型化合物結晶粒の外郭部に重希土類元素RHの濃度が前記結晶粒の中央部におけるよりも高い重希土類元素RH濃縮層を有し、かつ、前記R2Fe14B型化合物結晶粒の中央部における重希土類元素RHの濃度が前記結晶粒の粒界3重点における重希土類元素RHの濃度よりも1原子%以上低い組織を有している。\n\n【選択図】なし', '（有纠正）\n\n本发明的目的是提供一种R-Fe-B系稀土烧结磁体，其中重稀土元素RH通过有效地使用重稀土元素RH在整个磁体中扩散到主相晶粒的外壳。提供。\n\n基于R-Fe-B的稀土烧结磁体含有R 2 Fe    2  Fe  14  B外壳中的重稀土元素从磁体表面到100μm深度的表层区域中的复合晶粒重均稀土元素RH浓缩层，其RH浓度高于晶粒中心部分，以及R 2 Fe 14 B型化合物晶粒晶粒结构中心部分的重稀土元素RH的浓度比晶粒晶界的三重点处的重稀土元素RH的浓度低至少1原子％。\n\n【选择图表】无', 'JP2008290899', 1226505600, 'JP4349471B2', 1256054400, 1244044800, NULL, 1248969600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 39, 3, 0, 0, 0, NULL, NULL, NULL, '2006058555 | 2006204847 | 2006204848 | 2006239198 | 2006355280', 'JP | JP | JP | JP | JP', 1141315200, 32, 36, NULL, NULL, 0, 0, 0, 0, 1, NULL, NULL, NULL, '山田 正文', NULL, NULL, NULL, 'E.N. Tarasov et al.,The Influence of an Additive Chemical Composition and Its Phase State on Magnetic Properties of Nd-Fe-B Type Permanent Magnets,Proceedings of the 15th International Workshop on Rare-Earth Magnets and their Applications,1998年  8月30日,Vol.1,pp.447-451', 1, '\\20220510\\23ce2a8964fb4ba1a2715bb1ae67de1f.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39234, 39236, 39235, 43);
INSERT INTO `os_patent` VALUES (23056, '磁界発生装置', '磁场发生器', 'JP5370912B2', '【課題】外部磁界からの減磁界と熱減磁による不可逆減磁を抑えつつ、高強度の磁界を発生させる磁界発生装置を提供する。\n\n【解決手段】所定の空隙を介して対向して配置した一対のヨークの対向面に、前記空隙に対向する主面に対して直交方向に磁化方向を有する第1R-Fe—B系焼結磁石と、前記空隙に対向する主面に対して平行方向に磁化方向を有する第2R-Fe-B系焼結磁石とを前記各主面が同一平面となるように交互に配置した磁気回路構成部を有する磁界発生装置において、少なくとも前記第2R-Fe—B系焼結磁石の主面近傍の主相外殻部には、重希土類元素であるDy、Tbの少なくともいずれかを含有する希土類元素濃縮層を有する磁界発生装置を作製する。\n\n【選択図】図1', '要解决的问题：提供一种磁场发生器，该磁场发生器产生高强度磁场，同时抑制由去磁场引起的不可逆退磁和外部磁场的热去磁。解决方案：磁场发生器包括磁路结构，其中第一R-Fe-B系烧结磁体具有在与气隙相对的主表面正交的方向上的磁化方向，以及第二R-Fe-B系烧结在与气隙相对的主表面平行的方向上具有磁化方向的磁体交替地布置在经由规定的气隙彼此相对的一对磁轭的相对面上，使得主表面变成相同的平面。磁场发生器通过包含稀土元素浓度层来制造，所述稀土元素浓度层包含Dy或Tb中的至少一种，所述Dy或Tb是在至少第二R的主表面附近的主相外壳处的重稀土元素。 -Fe-B系烧结磁铁。', 'JP2008309447', 1228320000, 'JP5370912B2', 1387296000, 1276704000, NULL, 1380211200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 2, 0, 0, 0, 0, NULL, NULL, NULL, '下原 浩嗣', NULL, 'JP2007006545A | JP2007019127A', NULL, NULL, 1, '\\20220510\\f750757e063b4614af215f601e6f01b6.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 39377, 39379, 39378, 2);
INSERT INTO `os_patent` VALUES (23057, 'Sintered magnet production system', '烧结磁铁生产系统', 'US8657593B2', 'The present invention is aimed at providing a sintered magnet production system that can prevent the influences of a leaking magnetic field in an orienting process. A sintered magnet production system according to the present invention has a filling means 11 for filling an alloy powder into a filling/sintering container, a sintering means 13 for sintering the alloy powder, and an orienting means 12 with an air-core coil for producing a magnetic field for orienting the alloy powder in the filling/sintering container after the filling process and before the sintering process, the axis of the air-core coil being displaced from a straight line connecting the filling means 11 and the sintering means 13. The magnetic field leaking from the orienting means 12 is strongest on the extended line of the axis of the air-core coil and relatively weak in the direction perpendicular to the extended line. By displacing the axis of the air-core coil from the aforementioned straight line, the magnetic field leaking from the orienting means 12 is weakened at the positions of the filling means 11 and the sintering means 13, so that a magnet with high characteristics can be obtained.', '本发明的目的在于提供一种烧结磁体生产系统，其能够在定向过程中防止泄漏磁场的影响。根据本发明的烧结磁体生产系统具有用于将合金粉末填充到填充/烧结容器中的填充装置11，用于烧结合金粉末的烧结装置13，以及具有用于生产的空心线圈的定向装置12在填充过程之后和烧结过程之前，用于使合金粉末在填充/烧结容器中定向的磁场，空心线圈的轴线从连接填充装置11和烧结装置13的直线移位。从定向装置12泄漏的磁场在空心线圈的轴线的延长线上最强，而在垂直于延长线的方向上相对较弱。通过使空心线圈的轴线从上述直线移位，从定向装置12泄漏的磁场在填充装置11和烧结装置13的位置处减弱，从而可以形成具有高特性的磁体。获得。', 'US12/810620', 1229875200, 'US8657593B2', 1393257600, 1287590400, NULL, 1393257600, '美国', NULL, NULL, NULL, NULL, 2, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, '2007339359', 'JP', 1198771200, 14, 14, NULL, NULL, 23, 0, 0, 0, 5, NULL, '880', NULL, 'CRISPINO, RICHARD', 'NGUYEN, THUKHANH', 'CN1647220A | CN1969347A | DE10022717A1 | DE10131638A1 | EP0488334A2 | EP0646937A1 | JP1984046008A | JP1994096973A | JP1995132399A | JP1997129463A | JP2005226108A | JP2005232475A | JP2006019521A | US20020020470A1 | US20050208164A1 | US20070245851A1 | US4370112A | US5672363A | US6352598B1 | US6779995B2 | US7014440B2 | US7347681B2 | WO2003092020A1', NULL, 'Extended European Search Report issued in European Application No. 08868621.7 dated Mar. 15, 2011. cited by applicant | International Preliminary Report on Patentability issued in Patent Application No. PCT/JP2008/003877, on Aug. 10, 2010 (with translation). cited by applicant | May 18, 2012 Office Action issued in Taiwan Patent Application No. 97150192 (with translation). cited by applicant | Nov. 13, 2012 Office Action issued in Chinese Patent Application No. 200880118720.0 (with translation). cited by applicant | Oct. 1, 2013 Office Action issued in Japanese Patent Application No. 2013-054772 (with translation). cited by applicant.', 1, '\\20220510\\1bc51a6e50724cb09673a8736baedb68.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, NULL, 39380, 39382, 39381, 18);
INSERT INTO `os_patent` VALUES (23058, 'NdFeB sintered magnet and method for producing the same', '钕铁硼烧结磁铁及其制造方法', 'US8562756B2', 'The present invention is aimed at providing a method for producing an NdFeB sintered magnet having a higher coercivity and higher squareness of the magnetization curve than ever before. A method for producing an NdFeB sintered magnet according to the present invention includes the steps of forming a layer containing Dy and/or Tb on the surface of an NdFeB sintered magnet base material and then performing a grain boundary diffusion process for diffusing Dy and/or Tb from the aforementioned layer through the crystal grain boundaries of the magnet base material into the magnet base material by heating the magnet base material to a temperature equal to or lower than the sintering temperature thereof, and this method is characterized in that a) the content of a rare earth in a metallic state in the magnet base material is equal to or higher than 12.7 at %; b) the aforementioned layer is a powder layer formed by depositing a powder; and c) the powder layer contains Dy and/or Tb in a metallic state by an amount equal to or higher than 50 mass %.', '本发明的目的在于提供一种制造NdFeB烧结磁体的方法，该磁体具有比以前更高的矫顽力和更高的磁化曲线矩形度。根据本发明的制造NdFeB烧结磁体的方法包括以下步骤：在NdFeB烧结磁体基材的表面上形成含有Dy和/或Tb的层，然后进行晶界扩散过程以扩散Dy和/或Tb从上述层通过磁体基材的晶粒边界进入磁体基材，通过将磁体基材加热到等于或低于其烧结温度的温度，该方法的特征在于a）含量金属状态的稀土在磁铁基材中的含量等于或大于12.7at％; b）上述层是通过沉积粉末形成的粉末层; c）粉末层含有Dy和/或Tb，其金属状态的量等于或大于50质量％。', 'US12/812379', 1231430400, 'US8562756B2', 1382371200, 1289404800, NULL, 1382371200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 2, 0, 0, 0, NULL, NULL, NULL, '2008004845', 'JP', 1199980800, 15, 15, NULL, NULL, 23, 0, 0, 0, 13, NULL, '868', NULL, 'SHEEHAN, JOHN', NULL, 'EP1843360A1 | EP2144257A1 | JP1987074048A | JP1989117303A | JP2004359873A | JP2005320628A | JP2006303435A | JP2007053351A | JP2007258455A | JP2007287874A | JP2007287875A | JP2007329250A | US20080006345A1 | US20080223489A1 | US20100119703A1 | US20100129538A1 | US20100164663A1 | US20120176211A1 | WO2006004848A1 | WO2006043348A1 | WO2006064848A1 | WO2008032426A1 | WO2008139690A1', NULL, 'Apr. 23, 2013 Notification of Reasons for Rejection issued in Japanese Application No. 2008-004845 with English-language translation. cited by applicant | Aug. 31, 2012 Chinese Office Action issued in Chinese Patent Application No. 200980101615.0. (with English-language translation). cited by applicant | Chinese Office Action dated Jan. 4, 2012 issued in Chinese Patent Application No. 200980101615.0 (with translation). cited by applicant | Imanari et al, \"Study of Microstructure of Dy-Modified Neodymium Magnet,\" Collected Abstracts of the 2009 Spring Meeting of the Japan Institute of Metals, 2009, pp. 115 (with translation). cited by applicant | International Search Report and International Preliminary Report on Patentability dated Sep. 28, 2010 issued in International Patent Application No. PCT/JP2010/061712. cited by applicant | Ishigaki, N. et al., \"Surface Improvements on Magnetic Properties for Small-Sized Nd-Fe-B Sintered Magnets,\" NEOMAX Technical Report, 2005, pp. 15-19, vol. 15, published by Kabushiki Kaisha NEOMAX, Japan. cited by applicant | Jun. 18, 2013 Office Action in U.S. Appl. No. 13/778,324. cited by applicant | Machida, K. et al., \"Grain Boundary Modification and Magnetic Characteristics of Nd-Fe-B Sintered Magnet,\" Abstracts of Spring Meeting of Japan Society of Powder and Powder Metallurgy, 2004, p. 1-47A, published by the Japan Society of Powder and Powder Metallurgy, Japan. cited by applicant | Mar. 1, 2013 Chinese Office Action issued in Chinese Application No. 2013022600822040 (with English-language Translation). | Park, K.T., \"Effect of Metal-Coating and Consecutive Heat Treatment on Coercivity of Thin Nd-Fe-B Sintered Magnets,\" Proceedings of the Sixteenth International Workshop on Rare-Earth Magnets and Their Applications, 2000, pp. 257-264, published by the Japan Institute of Metals, Japan. cited by applicant | Sep. 18, 2012 Japanese Office Action issued in Japanese Patent Application No. 2008-004845 (with English-language translation). cited by applicant | Sep. 3, 2013 Notification of reason for Rejection issued in Japanese Application No. 2011-521979 with English-language translation. | Written Opinion of the International Searching Authority issued in International Application No. PCT/JP2009/000068 mailed on Apr. 14, 2009 (with translation). cited by applicant', 1, '\\20220510\\a8324c1124214e1f870fbc6a06c9d6bb.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39318, 39320, 39319, 16);
INSERT INTO `os_patent` VALUES (23059, 'R-Fe-B系希土類焼結磁石の製造方法およびその方法によって製造された希土類焼結磁石', '制造R-Fe-B基稀土烧结磁体的方法和由该方法制造的稀土烧结磁体', 'JP5348124B2', '軽希土類元素RL(NdおよびPrの少なくとも1種)および重希土類元素RH(DyおよびTbの少なくとも1種)を含有するR-Fe-B系希土類焼結磁石の製造方法であって、希土類元素、酸素、炭素および窒素の含有量を、それぞれ、X(質量%)、ZO(質量%)、ZC(質量%)、ZN(質量%)とし、ZO+ZC+ZNをY(質量%)とするとき、(0.114X-3.17)≦Y≦(0.157X-4.27)、0<ZO≦0.5、0<ZC≦0.1、0<ZN≦0.1の関係式を満たすR-Fe-B系希土類焼結磁石を準備する。次に、上記のR-Fe-B系希土類焼結磁石の表面に重希土類元素RHの濃化層を形成し、支持部材によって前記R-Fe-B系希土類焼結磁石を支持しながら700℃以上1100℃以下の温度で熱処理を行う。', '一种制造R-Fe-B基稀土烧结磁体的方法,含有至少一种小稀土元素R1(Nd和Pr)和重稀土元素RH(至少一个)的LH(至少一个)氧气,碳和氮的含量设定为X(质量%),ZO(质量%),Zc(质量%),Zn(质量%)和ZO + ZC + Zn是Y(质量%)。当(0.114x-3.17)≤y≤(0.157 x-4.27)时,0 <zo≤0.5,0<zc≤0.1,0<zn≤0.1,0 <zn≤01r-fe-b基稀土烧结磁体,满足关系表达式。接下来,在上述R-Fe-B基随机烧结磁体的表面上形成浓缩的重稀土元素RH,以及700℃,同时支撑R-Fe-B基稀土烧结磁体通过支撑构件,热处理在1100℃或更低的温度下进行。', 'JP2010500576', 1235664000, 'JP5348124B2', 1384876800, 1309363200, NULL, 1377792000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 3, 0, 0, 0, NULL, NULL, NULL, '2008048375', 'JP', 1204128000, 3, 3, NULL, NULL, 10, 0, 0, 0, 0, NULL, NULL, NULL, '高橋 克', NULL, 'JP1986087310A | JP1986264157A | JP1999273922A | JP2004304038A | JP2005011973A | JP2005285859A | JP2007318150A | WO2006112403A1 | WO2007088718A1 | WO2007102391A1', NULL, NULL, 1, '\\20220510\\26d102b740c745aeb174077b206ea368.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39383, 39385, 39384, 3);
INSERT INTO `os_patent` VALUES (23060, 'Magnetic field generator manufacturing method', '磁场发生器制造方法', 'US8322024B2', 'There is provided a method of manufacturing a magnetic field generator (10) that includes a pair of plate yokes (12a), (12b) which are opposed to each other, with their opposing faces provided with respective permanent magnet assemblies (14a), (14b) which have faces opposing to each other, to which pole pieces (16a), (16b) are fixed respectively, and include permanent magnets (18). The permanent magnets (18), (28) include R—Fe—B magnets. During manufacturing, the assembled magnetic field generator (10) is heated in its entirety at a temperature not lower than 40° C. and not higher than 70° C., whereby the R—Fe—B magnets are magnetized to a magnetization rate not smaller than 80% and not greater than 99.9%.', '提供一种制造磁场发生器（10）的方法，该磁场发生器包括一对彼此相对的板轭（12a），（12b），它们的相对面设有相应的永磁体组件（14a），（如图14b）所示，它们具有彼此相对的面，极片（16a），（16b）分别固定在其上，并包括永磁体（18）。永磁体（18），（28）包括R-Fe-B磁体。在制造期间，组装的磁场发生器（10）在不低于40℃且不高于70℃的温度下被整体加热，由此R-Fe-B磁体被磁化至不是磁化率。小于80％且不大于99.9％。', 'US12/382097', 1236528000, 'US8322024B2', 1354550400, 1254326400, NULL, 1354550400, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 17, 2, 0, 0, 0, NULL, NULL, NULL, '2002037746', 'JP', 1013702400, 9, 13, NULL, NULL, 40, 4, 0, 0, 4, NULL, '851', NULL, 'ANGWIN, DAVID', NULL, 'JP1980055504A | JP1983130510A | JP1985076110A | JP1986140106A | JP1986281505A | JP1988169710A | JP1990148704A | JP1992313204A | JP1994163239A | JP1995007110A | JP1995029716A | JP1996339916A | JP1997056691A | JP1997131025A | JP1998275720A | JP1998326710A | JP2000051175A | JP2001044031A | JP2001085223A | JP2001326118A | US20020171526A1 | US4672346A | US4827235A | US6166617A | US6336989B1 | US6452472B1 | US6634089B1 | US6650214B2 | US6662434B2 | US6784776B2 | US6897751B2 | US6967481B2 | US7051425B2 | US7065860B2 | US7143507B2 | US7631411B2 | US7710081B2 | US7802354B2 | US7960948B2 | US8040007B2', 'US11105873B2 | US11119168B2 | US11215685B2 | US20200150204A1', 'International Search Report (and Partial translation thereof (4 pages). cited by other | Notification of Reason(s) for Refusal to the corresponding Japanese Patent Appln. No. 2003-35128. cited by other | Notification of Reasons for Refusal dated May 18, 2010 to the corresponding Japanese Patent Application No. 2007-330824 with English translation. cited by other. | Office Action to the corresponding Chinese Application No. 03803891.9 along with English translation. cited by other', 1, '\\20220510\\838ca20214f04eddb7e7cad7d860b53a.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39386, 38985, 38984, 13);
INSERT INTO `os_patent` VALUES (23061, '表面改質された希土類系焼結磁石の製造方法', '表面改性稀土类烧结磁铁的制造方法', 'JP5262902B2', '【課題】 湿度が変動する環境においても十分な耐食性が酸化熱処理によって付与されているとともに、酸化熱処理による磁気特性の低下が抑制された希土類系焼結磁石の製造方法を提供すること。\n\n【解決手段】 本発明の表面改質された希土類系焼結磁石の製造方法は、磁石に対し、酸素分圧が1×102Pa〜1×105Paで水蒸気分圧が0.1Pa〜1000Pa(但し1000Paを除く)の雰囲気下、磁石のFeのCo置換量が磁石全体の1.2質量%未満の場合には200℃〜400℃(但し400℃を除く)で、磁石のFeのCo置換量が磁石全体の1.2質量%以上の場合には400℃〜600℃で熱処理を行う工程を含んでなることを特徴とする。\n\n【選択図】図2', '要解决的问题：提供一种制造稀土基烧结磁体的方法，该烧结磁体即使在湿度波动的环境下也具有通过氧化热处理给出的足够的耐腐蚀性，并且防止磁特性因氧化热处理而劣化。解决方案：这种制造表面改性的稀土基烧结磁体的方法包括在氧气分压为1＆amp; 102-1＆amp; 105Pa且水蒸气分压为0.1-的气氛下对磁体进行热处理的工艺。当磁体中的Co的Co取代量小于整个磁体的1.2质量％时，在200-400℃下（不包括400℃），1000Pa（但不包括1,000Pa），并且在当磁体中的Co的Co取代量不小于整个磁体的1.2质量％时，在400-600℃。', 'JP2009077196', 1237996800, 'JP5262902B2', 1376409600, 1286985600, NULL, 1368115200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 9, 0, 0, 0, 0, NULL, NULL, NULL, '田中 純一', NULL, 'JP2001160508A | JP2002057052A | JP2006156853A | JP2006210864A | JP2007103523A | JP2007207936A | JP2008063641A | JP2008244126A', NULL, NULL, 1, '\\20220510\\9327afdced8e4c9cb929a4fb4d3f7ec6.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39387, 39389, 39388, 2);
INSERT INTO `os_patent` VALUES (23062, '耐塩水性に優れた希土類系永久磁石の製造方法', '制造耐盐水性优异的稀土类永久磁铁的方法', 'JP5326730B2', '【課題】 耐塩水性に優れた希土類系永久磁石の製造方法を提供すること。\n\n【解決手段】 本発明の耐塩水性に優れた希土類系永久磁石の製造方法は、希土類系永久磁石の表面にMgを含むAl被膜を蒸着形成した後、200℃〜500℃で酸化熱処理を行う工程を含んでなることを特徴とする。酸化熱処理は、酸素分圧が1×102Pa〜1×105Paで水蒸気分圧が0.1Pa〜1000Pa(但し1000Paを除く)の雰囲気下で行う方法を採用することが望ましい。\n\n【選択図】図3', '要解决的问题：提供一种制造耐盐水性优异的稀土永磁体的方法。 ŽSOLUTION：制造耐盐水性优异的稀土永磁体的方法配置如下。该方法包括在稀土永磁体表面上通过气相沉积形成含Mg的Al膜之后在200-500℃下进行氧化热处理的步骤。关于氧化热处理，期望采用在氧分压为1×10  至1×10  的气氛下进行氧化热处理的方法。 Pa水蒸气分压为0.1-1,000Pa（但不包括1,000Pa）。 Ž', 'JP2009077229', 1237996800, 'JP5326730B2', 1383062400, 1286985600, NULL, 1375372800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 8, 0, 0, 0, 0, NULL, NULL, NULL, '田中 純一', NULL, 'JP2000150216A | JP2000232011A | JP2001167917A | JP2005105311A | JP2005191276A | JP2006245064A | JP2009054716A | WO2007114336A1', NULL, NULL, 1, '\\20220510\\c50ba07d0fd14889adcf4ad9a648cf40.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39390, 39392, 39391, 2);
INSERT INTO `os_patent` VALUES (23063, '表面改質された希土類系焼結磁石の製造方法', '表面改性稀土类烧结磁铁的制造方法', 'JP5262903B2', '【課題】 湿度が変動する環境においても十分な耐食性が酸化熱処理によって付与されているとともに、酸化熱処理による磁気特性の低下が抑制された希土類系焼結磁石の製造方法を提供すること。\n\n【解決手段】 本発明の表面改質された希土類系焼結磁石の製造方法は、磁石に対し、酸素分圧が1×102Pa〜1×105Paで水蒸気分圧が0.1Pa〜1000Pa(但し1000Paを除く)の雰囲気下、磁石の酸素含有量が0.3質量%未満の場合には400℃〜600℃で、磁石の酸素含有量が0.3質量%以上の場合には200℃〜400℃(但し400℃を除く)で熱処理を行う工程を含んでなることを特徴とする。\n\n【選択図】図2', '要解决的问题：提供一种制造稀土基烧结磁体的方法，该烧结磁体即使在湿度波动的环境下也具有通过氧化热处理给出的足够的耐腐蚀性，并且防止磁特性因氧化热处理而劣化。解决方案：这种制造表面改性的稀土基烧结磁体的方法包括在氧气分压为1＆amp; 102-1＆amp; 105Pa且水蒸气分压为0.1-的气氛下对磁体进行热处理的工艺。当磁体中的氧含量小于0.3质量％时，在400~600℃时（不包括1000Pa），当氧含量为200-400℃时（不包括400℃）在磁体中不小于0.3质量％。', 'JP2009077258', 1237996800, 'JP5262903B2', 1376409600, 1286985600, NULL, 1368115200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 8, 0, 0, 0, 0, NULL, NULL, NULL, '田中 純一', NULL, 'JP2001160508A | JP2002057052A | JP2006156853A | JP2006210864A | JP2007103523A | JP2007207936A | JP2008244126A', NULL, NULL, 1, '\\20220510\\e894742d17d54fefb5cda971c766ecf7.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39393, 39395, 39394, 2);
INSERT INTO `os_patent` VALUES (23064, 'タンディッシュとそれを用いたR-T-B系合金の製造方法', '中间包和使用其制造R-T-B合金的方法', 'JP5344296B2', '【課題】従来のストリップキャスト法で発生していたR-T-B系合金の厚みバラツキを抑える。\n\n【解決手段】\n\n所定の組成となるようにルツボ内に原料を投入してから加熱し、R-T-B系合金の溶湯を作製する工程と、前記作製したR-T-B系合金の溶湯は、溶湯の流路を形成する傾斜部と平坦部を有する本体と、前記平坦部と所定の間隔を形成して対向配置する蓋と前記蓋に配置する加熱手段とを有し、前記間隙を湯口とするタンディッシュを経由して前記注湯したR-T-B系合金の溶湯を表面粗さRaが1.2μm以上である冷却ロールに注湯して急冷する工程と、からなるR-T-B系合金の製造方法により、厚みの標準偏差が従来に比べて極めて小さいR-T-B系合金作製する。\n\n【選択図】図1', '本发明的目的是抑制传统条带铸造方法产生的R-T-B基合金的厚度变化。\n\n[解决方案]\n\n将原料在坩埚中引入坩埚后加热过程,以是预定的组合物,并且上述RTB基合金的RTB基合金的熔融金属是形成流动路径的倾斜部分熔融金属。具有平坦部分的主体和布置在盖子上的加热装置和设置在盖子上的盖子,以设置在与平坦部分相对的盖子上,并且通过中间巾使用间隙以成为热水端口。将RTB基合金的熔融金属倒入具有表面粗糙度Ra的冷却辊,冷却辊,以及用于快速冷却的方法,以及制造由RTB基合金组成的RTB基合金的方法是极小于常规制剂的RTB基合金。\n\n图1', 'JP2009081311', 1238342400, 'JP5344296B2', 1384876800, 1286985600, NULL, 1377187200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, '川村 健一', NULL, 'JP1983125345A | JP1996229641A | JP1997155507A | JP2005342734A', NULL, NULL, 1, '\\20220510\\eaae7d9f25cf4c65a0b4aac61e8a90b3.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39396, 39398, 39397, 2);
INSERT INTO `os_patent` VALUES (23065, 'R-T-B系焼結磁石およびその製造方法', 'R-T-B系烧结磁铁及其制造方法', 'JP5477282B2', '本発明のR-T-B系焼結磁石は、R:27.3質量%以上、29.5質量%以下、B:0.92質量%以上、1質量%以下、Cu:0.05質量%以上、0.3質量%以下、M:0.02質量%以上、0.5質量%以下、T:残部、酸素含有量が0.02質量%以上、0.2質量%以下、の組成を有し、焼結磁石の主相はR2T14B型化合物であり、主相の結晶粒径が、円相当径で8μm以下であり、かつ4μm以下の結晶粒子の占める面積率が、主相全体の80%以上である。', '本发明的RTB的烧结磁体为R:27.3质量%以上,29.5质量%以下,29.5质量%,B:0.92质量%以上,1质量%以下,Cu:0.05质量%或更多,0.3质量%或更小,M:0.02质量%。%超过或更高,0.5质量%,T:余量,氧含量为0.02质量%以上,0.2质量%或更小,和主相烧结磁体是R2T14B型化合物,圆形晶粒的晶粒圆形等效直径为8μm以下的晶体颗粒和直径为4μm以下的晶粒的面积比为80%以上主要阶段。', 'JP2010505384', 1238342400, 'JP5477282B2', 1398182400, 1311782400, NULL, 1392912000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 23, 2, 0, 0, 0, NULL, NULL, NULL, '2008089914', 'JP', 1206892800, 10, 10, NULL, NULL, 19, 0, 0, 0, 0, NULL, NULL, NULL, '塩▲崎▼ 義晃', NULL, 'JP1984163802A | JP1984211558A | JP1987158854A | JP1992007804A | JP1993205927A | JP2002373822A | JP2004303909A | JP2005015886A | JP2005136015A | JP2005197300A | JP2005197301A | JP2005197533A | JP2005290398A | JP2006100847A | JP2006165008A | JP2006270087A | JP2006303433A | JP2007180374A | WO2005001856A1', NULL, NULL, 1, '\\20220510\\fed3643040e14d3fa570a7425cefa9f2.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39399, 39401, 39400, 11);
INSERT INTO `os_patent` VALUES (23066, '希土類焼結磁石製造方法', '稀土烧结磁铁的制造方法', 'JP5103428B2', '【課題】有機分散剤や有機潤滑剤による影響を受けることなく、高い磁気特性を有する希土類焼結磁石の製造方法を提供する。\n\n【解決手段】本方法は原料の合金を粗粉砕した後にジェットミル法によって微粉砕することにより合金粉末を得る粉砕工程と、その合金粉末を磁界中で配向する配向工程と、配向工程後の合金粉末を焼結する焼結工程とを有し、微粉砕を水素ガス中、又は水素ガスと不活性ガスの混合ガス中で行うことを特徴とする。本方法では水素が分散剤となり、有機分散剤を用いずに効率よく微粉砕することができるため、有機分散剤に由来する炭素、酸素、窒素原子が合金粉末の微粉粒子内に侵入することがなく、磁気特性が向上する。また、粉砕工程と配向工程の間に合金粉末と液化不活性ガスを混合し、液化不活性ガスが完全に気化する前に配向工程を行うと、有機潤滑剤を用いずに配向性が高まるため、有機潤滑剤に由来する炭素等の影響がないうえ、脱有機潤滑剤工程が不要になる。\n\n【選択図】なし', '要解决的问题：提供一种制造具有高磁性的稀土烧结磁体的方法，而不受有机分散剂或有机润滑剂的影响。\n\n该方法包括通过粗粉碎原料合金后用喷射磨法细粉碎获得的合金粉末的粉碎工序，取向工序后在磁场中定向的合金粉末，该合金的取向步骤和烧结粉末的烧结步骤，其特征在于粉碎在氢气或氢气和惰性气体的混合气体中进行。氢作为在本发明方法的分散剂，可以不使用有机分散剂，从有机分散剂得到的碳，氧有效地粉碎，即氮原子的进入的合金粉末的细颗粒相反，磁性能得到改善。此外，合金粉末和液化惰性气体中粉碎步骤和取向步骤是混合的，液化的惰性气体进行的取向步骤之前完全汽化，由于取向不使用有机润滑剂增强，来自有机润滑剂等的碳不受影响，并且不需要除臭润滑剂步骤。\n\n【选择图】无', 'JP2009081034', 1238342400, 'JP5103428B2', 1355846400, 1286985600, NULL, 1349366400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 8, 5, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, '863', NULL, '長谷川 直也', NULL, NULL, NULL, NULL, 1, '\\20220510\\d712aec541d044ff8f512546cd417d33.png', NULL, NULL, 2, NULL, NULL, 6, NULL, NULL, NULL, 39402, 39404, 39403, 2);
INSERT INTO `os_patent` VALUES (23067, 'R-T-B-type sintered magnet and method for production thereof', 'R-T-B型烧结磁铁及其制造方法', 'US8317941B2', 'An R-T-B based sintered magnet according to the present invention has a composition including: 27.3 mass % to 29.5 mass % of R; 0.92 mass % to 1 mass % of B; 0.05 mass % to 0.3 mass % of Cu; 0.02 mass % to 0.5 mass % of M; and T as the balance, and has an oxygen content of 0.02 mass % to 0.2 mass %. The main phase of the sintered magnet is an R2T14B type compound. The crystal grain size of the main phase is represented by an equivalent circle diameter of 8 μm or less. And crystal grains with equivalent circle diameters of 4 μm or less account for at least 80% of the overall area of the main phase.', '根据本发明的R-T-B基烧结磁体具有包含：27.3质量％至29.5质量％的R的组成; B为0.92质量％~1质量％; 0.05质量％至0.3质量％的Cu; 0.02质量％~0.5质量％M;并且T为余量，氧含量为0.02质量％至0.2质量％。烧结磁体的主相是R2T14B型化合物。主相的晶粒尺寸由等效圆直径8μm或更小表示。并且，等效圆直径为4μm或更小的晶粒占主相总面积的至少80％。', 'US12/935318', 1238342400, 'US8317941B2', 1353945600, 1296662400, NULL, 1353945600, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 17, 2, 0, 0, 0, NULL, NULL, NULL, '2008089914', 'JP', 1206892800, 10, 10, NULL, NULL, 17, 9, 5, 8, 4, NULL, '850', NULL, 'SHEEHAN, JOHN', NULL, 'JP1992007804A | JP2000219942A | JP2002373822A | JP2004303909A | JP2005136015A | JP2005290398A | JP2006100847A | JP2006270087A | JP2007180374A | US20040189426A1 | US20060213583A1 | US20060231165A1 | US4792368A | US4840684A | US5858123A | US6045629A | US8092619B2', 'US10395823B2 | US11270841B2 | US20180025818A1 | US20180096762A1 | US9044834B2 | US9067284B2 | US9095940B2 | US9144865B2 | US9336932B1', 'English translation of Official Communication issued in corresponding International Application No. PCT/JP2009/001448, mailed on Dec. 23, 2010. cited by other | Machine Translation of JP 2005-136015, May 25, 2005. | Machine Translation of JP 2005-136015, May 25, 2005. cited by examiner | Official Communication issued in International Patent Application No. PCT/JP2009/001448, mailed on Jun. 16, 2009. cited by other.', 1, '\\20220510\\812bfcae47034e9a85a810c0e6c2f84c.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39399, 39401, 39400, 11);
INSERT INTO `os_patent` VALUES (23068, 'R-t-b-type sintered magnet and method for production thereof', 'R-t-b型烧结磁铁及其制造方法', 'EP2273513B1', 'An R-T-B based sintered magnet according to the present invention has a composition including: 27.3 mass% to 29.5 mass% of R; 0.92 mass% to 1 mass% of B; 0.05 mass% to 0.3 mass% of Cu; 0.02 mass% to 0.5 mass% of M; and T as the balance, and has an oxygen content of 0.02 mass% to 0.2 mass%. The main phase of the sintered magnet is an R2T14B type compound. The crystal grain size of the main phase is represented by an equivalent circle diameter of 8 µm or less. And crystal grains with equivalent circle diameters of 4 µm or less account for at least 80% of the overall area of the main phase.', '根据本发明的R-T-B基烧结磁体具有包含：27.3质量％至29.5质量％的R的组成;B为0.92质量％~1质量％;0.05质量％至0.3质量％的Cu;0.02质量％~0.5质量％M;并且T为余量，氧含量为0.02质量％至0.2质量％。烧结磁体的主相是R2T14B型化合物。主相的晶粒尺寸由等效圆直径8μm或更小表示。并且，等效圆直径为4μm或更小的晶粒占主相总面积的至少80％。', 'EP2009727377', 1238342400, 'EP2273513B1', 1571155200, 1294761600, NULL, 1571155200, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 27, 2, 0, 0, 0, NULL, NULL, NULL, '2008089914', 'JP', 1206892800, 10, 10, NULL, NULL, 19, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, 'EP1641000A1 | JP1984163802A | JP1984211558A | JP2000219942A | JP2002373822A | JP2003188006A | JP2004303909A | JP2005136015A | JP2005197533A | JP2005290398A | JP2006100847A | JP2006165008A | JP2006270087A | JP2006303433A | JP2007180374A | WO2003052778A1 | WO2005001856A1', NULL, NULL, 1, '\\20220510\\caf6365e80f944118f77870dad62c5e8.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, '有效:DE,FR,GB | 失效:NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,SE,SI,MC,SK,IE,EE,CH,IS,IT,GR,ES,AT,CZ,PL,RO,LI,NL | 未确认:HU,MK,MT,CY,TR', 39399, 39401, 39400, 11);
INSERT INTO `os_patent` VALUES (23069, 'SINTERMAGNET DES R-T-B-TYPS UND HERSTELLUNGSVERFAHREN DAFÜR', '烧结磁铁的R-T-B型和制造过程', 'DE602009060148T2', 'Disclosed is an R-T-B-type sintered magnet which has the following chemical composition: R: 27.3 to 29.5 mass% (inclusive), B: 0.92 to 1 mass% (inclusive), Cu: 0.05 to 0.3 mass% (inclusive) and M: 0.02 to 0.5 mass% (inclusive), with the remainder being T, and has an oxygen content of 0.02 to 0.2 mass%, wherein the main phase of the sintered magnet comprises a R2T14B-type compound, the main phase has a crystal particle diameter of 8 μm or less in terms of circle-equivalent diameter, and the surface area occupied by crystal particles each having a size of 4 μm or less makes up 80% or more of the whole surface area of the main phase.', '本发明公开了一种RTB型烧结磁体，其具有以下化学组成：R：27.3至29.5质量％（含），B：0.92至1质量％（含），Cu：0.05至0.3质量％（含），M：0.02至0.5质量％（含），余量为T，氧含量为0.02至0.2质量％，其中烧结磁体的主相包含R2T14B型化合物，主相具有晶体粒径以圆当量直径计，为8μm以下，且各自的尺寸为4μm以下的晶体颗粒占据的表面积占主相的整个表面积的80％以上。', 'DE602009060148', 1238342400, 'DE602009060148T2', 1571155200, 1571155200, NULL, 1571155200, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 40, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 39405, 39401, 39406, 11);
INSERT INTO `os_patent` VALUES (23070, 'R-Fe-B系焼結磁石の脱粒防止方法', 'R-Fe-B系焼结磁石の脱粒防止方法', 'JP5326747B2', '【課題】 R-Fe-B系焼結磁石に対する機械的加工によって生じる脱粒を効果的に防止する方法を提供すること。\n\n【解決手段】 本発明のR-Fe-B系焼結磁石の脱粒防止方法は、磁石表面に対して砥石加工を行った後、酸素分圧が1×102Pa〜1×105Paで水蒸気分圧が0.1Pa〜1000Pa(但し1000Paを除く)の雰囲気下、200℃〜600℃で熱処理を行うことで、その表面に改質層を形成することを特徴とする。\n\n【選択図】図2', '要解决的问题：提供一种有效防止由R-Fe-B基烧结磁体上的机械加工引起的颗粒脱落的方法。\n\n解决方案：本发明的防止R-Fe-B基烧结磁体沉淀的方法包括以1×10 2 Pa的氧分压研磨磁体表面。在水蒸气分压为0.1Pa至1000Pa（不包括1000Pa），1×10 5 Pa的气氛中，在200℃至600℃下热处理至表面上的改性层形成。\n\n[选择图]图2', 'JP2009084791', 1238428800, 'JP5326747B2', 1383062400, 1288800000, NULL, 1375372800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 3, 0, 0, 0, NULL, NULL, NULL, '2009077273', 'JP', 1237996800, 2, 2, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '田中 純一', NULL, 'JP1986264106A | JP1994013211A | JP2001160508A | JP2006041295A | JP2006210864A | JP2008244126A', NULL, NULL, 1, '\\20220510\\b3f5d7dcdfcd46058bcdf74d49f2ad2b.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39407, 39409, 39408, 2);
INSERT INTO `os_patent` VALUES (23071, '表面改質されたR-Fe-B系焼結磁石の製造方法', '表面改性R  -  Fe  -  B基烧结磁体的制备方法', 'JP5326746B2', '【課題】 湿度が変動する環境においても十分な耐食性を有するR-Fe-B系焼結磁石の製造方法を提供すること。\n\n【解決手段】 本発明の表面改質されたR-Fe-B系焼結磁石の製造方法は、磁石表面に対して砥石加工を行ってから酸化熱処理を行う工程を含んでなることを特徴とする。砥石加工は番手が♯60〜♯400の粒度を有する砥石を用いて行うことが望ましく、酸化熱処理は、酸素分圧が1×102Pa〜1×105Paで水蒸気分圧が0.1Pa〜1000Pa(但し1000Paを除く)の雰囲気下、200℃〜600℃で熱処理を行う方法を採用することが望ましい。\n\n【選択図】図2', '要解决的问题：提供一种制造即使在湿度波动的环境中也具有足够耐腐蚀性的R-Fe-B基烧结磁体的方法。 ŽSOLUTION：这种制造R-Fe-B基烧结磁体的方法包括对磁体表面进行砂轮加工，然后进行氧化热处理的步骤。优选地，使用粒度为＃60-＃400计数的磨石进行磨石加工，并且优选通过采用在200-600℃的气氛下进行热处理的方法进行氧化热处理。 1×10  2 至1×10  5  Pa的氧分压和0.1至1,000Pa（除了1,000Pa）的蒸汽分压。 Ž', 'JP2009084714', 1238428800, 'JP5326746B2', 1383062400, 1288800000, NULL, 1375372800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 3, 0, 0, 0, NULL, NULL, NULL, '2009077152', 'JP', 1237996800, 2, 2, NULL, NULL, 12, 0, 0, 0, 0, NULL, NULL, NULL, '田中 純一', NULL, 'JP1986264106A | JP1992328804A | JP1994013211A | JP2001160508A | JP2002057052A | JP2006041295A | JP2006156853A | JP2006210864A | JP2007103523A | JP2007207936A | JP2008244126A', NULL, NULL, 1, '\\20220510\\280052edb33e486d96ffed5e94321659.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 39410, 39412, 39411, 2);
INSERT INTO `os_patent` VALUES (23072, '希土類焼結磁石の加工装置', '稀土烧结磁铁加工设备', 'JP5365996B2', '【課題】希土類焼結磁石の加工装置で、連続加工時、希土類磁石が食い込むことで搬送路に凹部が発生し、搬送路の摺動性が悪くなった。\n\n【解決手段】\n\n回転砥石と、希土類磁石を連続して搬送する搬送路を有する希土類焼結磁石の加工装置において、少なくとも搬送路の回転砥石直下の部位が超硬合金からなる基材の上にCrN(窒化クロム)、DLC(ダイヤモンドライクカーボン)の順に層を有することを特徴とする希土類焼結磁石の加工装置とする。\n\n【選択図】図1', '要解决的问题：为了解决稀土烧结磁体的传统加工装置的问题，其中，在连续加工期间，由于稀土磁体的咬入而在输送路径中出现凹陷，并且输送路径的可滑动性是恶化。解决方案：该稀土烧结磁体加工装置包括旋转砂轮和连续输送稀土磁铁的输送路径。 CrN（氮化铬）层和DLC（类金刚石碳）层依次形成在输送路径的基板上，该输送路径的基板上至少有一部分由刚好在旋转研磨轮下方的硬质合金制成。', 'JP2009088615', 1238515200, 'JP5365996B2', 1386691200, 1288195200, NULL, 1379606400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 7, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '亀田 貴志', NULL, 'JP1999347900A | JP2002178246A | JP2003268571A | JP2004169137A | JP2007021625A | JP2007268638A', NULL, NULL, 1, '\\20220510\\4d7ad74ea2864d77999807fcbfd391b5.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39413, 39415, 39414, 2);
INSERT INTO `os_patent` VALUES (23073, '表面にMgを含むAl被膜を蒸着形成した希土類系永久磁石の耐塩水性向上方法', '一种改善稀土基永磁体的耐盐水性的方法，其中在表面上气相沉积含Mg的Al涂层', 'JP5223761B2', '【課題】 表面にMgを含むAl被膜を蒸着形成した希土類系永久磁石の耐塩水性向上方法を提供すること。\n\n【解決手段】 本発明の表面にMgを含むAl被膜を蒸着形成した希土類系永久磁石の耐塩水性向上方法は、Mgを含むAl被膜の表面を結露させることにより、被膜中のMgを被膜表面に染み出させることを特徴とする。Mgを含むAl被膜の表面を結露させる方法としては、例えば、少なくとも被膜表面の温度が10℃〜80℃である、表面にMgを含むAl被膜を蒸着形成した希土類系永久磁石を、露点温度が15℃〜85℃の環境(但し露点温度は被膜表面の温度よりも高いことを条件とする)に曝露することにより、被膜表面を結露させる方法が挙げられる。\n\n【選択図】図3', '要解决的问题：提供一种改善具有在表面上含有Mg的气相沉积Al膜的稀土基永磁体的耐盐水性的方法。解决方案：改善在表面上具有含Mg的气相沉积Al膜的稀土基永磁体的耐盐水性的方法，其特征在于通过使Al表面的Mg表面渗透而使Al膜中的Mg渗透到膜表面。含有Mg的Al膜形成露水。例如，有一种制造含有Mg形式的Al膜表面的方法，包括暴露具有在表面上气相沉积Mg的Al膜的稀土基永磁体，其在膜表面上的温度为至少在露点温度为15至85℃的环境中10至80℃（假设露点温度高于薄膜表面的温度）。Ž', 'JP2009094126', 1239120000, 'JP5223761B2', 1372176000, 1288195200, NULL, 1363881600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 9, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '高橋 克', NULL, 'JP1995027694A | JP2000150216A | JP2000232011A | JP2000282262A | JP2001167917A | JP2005191276A | JP2009054716A', NULL, NULL, 1, '\\20220510\\712580e1050e496cb524d5882bf4ca0f.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39416, 39418, 39417, 2);
INSERT INTO `os_patent` VALUES (23074, 'R-TM-B系ラジアル異方性リング磁石の製造方法', 'R-TM-B型径向各向异性环形磁铁的制作方法', 'JP5359513B2', '(修正有)\n\n【課題】R-TM-B系ラジアル異方性リング磁石の製造方法において、変形の少ない焼結体を得るための焼結方法を提供する。\n\n【解決手段】R-TM-B系ラジアル異方性リング磁石を製造する方法であって、焼結時にリング磁石成型体の内径に焼結治具(円柱体)を挿入し、なおかつ焼結治具の軸方向の長さを、焼結体の軸方向の長さよりも短くすることで、焼結体の変形を押さえることが出来る。更には焼結体の割れ発生を抑えることが可能となる。\n\n【選択図】図4', '(纠正)\n\n用于制造基于R-TM-B基径向各向异性环磁体的烧结方法提供了一种用于获得具有低变形的烧结体的烧结方法。\n\n在烧结时将制造R-TM-B基径向各向异性环磁体和烧结夹具(圆柱体)的方法插入环磁体成型体的内径中,通过制造轴向长度该工具短于烧结体的轴向长度,可以抑制烧结体的变形。此外,可以抑制烧结体的裂缝产生。\n\n图4.', 'JP2009105204', 1240416000, 'JP5359513B2', 1386086400, 1289404800, NULL, 1379001600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 11, 0, 0, 0, 0, NULL, NULL, NULL, '田中 純一', NULL, 'JP1990272711A | JP1992063402A | JP1997129463A | JP2001335808A | JP2006019521A | JP2006108591A | JP2006237067A | JP2006261236A | JP2007134353A | JP2008163466A | JP2008248265A', NULL, NULL, 1, '\\20220510\\f4b3c783a9584870ab918dd224831523.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39419, 39421, 39420, 3);
INSERT INTO `os_patent` VALUES (23075, '希土類系永久磁石およびその製造方法', '稀土基永磁体及其制造方法', 'JP5366000B2', '【課題】Laを主たる希土類元素とする希土類系永久磁石において、高い残留磁束密度、および飽和磁化を有し、かつ実用的な保磁力を有する希土類系永久磁石を提供することを目的とする。\n\n【解決手段】本発明の希土類系永久磁石は、その組成が(La1-xRex)y(B1-qCq)z(Fe1-rTr)100-y-z、(Re=R’aR”1-a、但し、R’はNd、Prおよびそれらの組み合わせ,R”はLa、Nd、Pr、Ce以外の希土類元素、TはFe以外の遷移金属元素、0.3≦x≦0.7、12≦y≦20、4≦z≦10、0.5≦a≦1.0、0≦q≦0.1、0≦r≦0.1)である。\n\n【選択図】なし', '要解决的问题：提供一种稀土金属基永磁体，其具有La作为主要稀土元素，其具有高的剩余磁通密度和饱和磁化强度并且具有实用的矫顽力。\n\n解决方案：本发明的稀土基永磁体具有（La  1-x  Re  x ） y 的组成（B  1  -  r  T  r  （Re = R\' a  R“ 1  -  a ，其中R\'是Nd，Pr R“是La，Nd，Pr，Ce以外的稀土元素，T是除Fe以外的过渡金属元素，0.3≤x≤0.7,12≤y≤20,4≤z≤10,0.5≤a ≤1.0,0≤q≤0.1,0≤r≤0.1）。\n\n【选择图】无', 'JP2009107722', 1240761600, 'JP5366000B2', 1386691200, 1289404800, NULL, 1379606400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 8, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 11, 0, 0, 0, 0, NULL, NULL, NULL, '久保田 昌晴', NULL, 'JP1983123853A | JP1984076856A | JP1986056266A | JP1989007502A | JP1991053505A | JP2000353612A | JP2002520843A | JP2005093729A | JP2007524986A | JP2513994B2 | US4402770A', NULL, NULL, 1, '\\20220510\\827d65074da246ce9c2ac5f67f635b75.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39422, 39424, 39423, 2);
INSERT INTO `os_patent` VALUES (23076, '希土類系永久磁石およびその製造方法', '稀土基永磁体及其制造方法', 'JP5412172B2', '【課題】 磁石粉末の体積比率が高いことで磁気特性に優れるとともに、強度や耐候性の面においても優れた特性を有する希土類系永久磁石およびその製造方法を提供すること。\n\n【解決手段】 本発明の希土類系永久磁石の製造方法は、樹脂バインダを用いずに希土類系急冷合金粉末を冷間圧縮成形することにより、全体に占める希土類系急冷合金粉末の体積比率が75%〜95%の圧縮成形体を形成する圧縮成形体形成工程と、形成された圧縮成形体に対して樹脂含浸剤を含浸させる樹脂含浸剤含浸工程と、樹脂含浸剤を含浸させた圧縮成形体に対して60℃〜100℃で熱処理を行う第1熱処理工程と、圧縮成形体を上下反転させてから10℃/分以下の昇温速度で100℃〜200℃の範囲の温度まで昇温して熱処理を行う第2熱処理工程を少なくとも含んでなることを特徴とする。\n\n【選択図】 なし', '要解决的问题：提供一种稀土永磁体，其具有优异的磁特性，因为磁体粉末的体积比高，并且在强度和耐候性方面具有优异的特性，及其制造方法。 ŽSOLUTION：稀土永磁体的制造方法至少包括：通过对稀土基淬火制成的稀土基淬火合金粉末体积比为75-95％的成形体的紧凑成形工艺。合金粉末在不使用树脂粘合剂的情况下冷压缩;用树脂浸渍剂浸渍所形成的压块的树脂浸渍浸渍方法;第一个热处理方法，用浸渍在浸渍剂中的压块在60至100℃下进行热处理;以及在翻转压块后，通过在≤10℃/ min的升温速度下将温度升高至100至200℃来进行热处理的第二热处理工艺。 Ž', 'JP2009110993', 1241020800, 'JP5412172B2', 1392134400, 1290009600, NULL, 1384444800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 9, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 14, 0, 0, 0, 0, NULL, NULL, NULL, '田中 純一', NULL, 'JP1979121999A | JP1986188481A | JP1991108702A | JP1992236702A | JP1996167513A | JP1996293411A | JP1997022828A | JP1999067514A | JP2001102207A | JP2001143916A | JP2001267192A | JP2002260943A | JP2002299142A | WO2007018123A1', NULL, NULL, 1, '\\20220510\\319bbdc6eb5e40dc9e8d60fca7a2376d.png', NULL, NULL, 2, NULL, NULL, 4, NULL, NULL, NULL, 39425, 39427, 39426, 2);
INSERT INTO `os_patent` VALUES (23077, 'R-T-Cu-Mn-B type sintered magnet', 'R-T-Cu-Mn-B型烧结磁铁', 'US8092619B2', 'An R-T-Cu—Mn—B based sintered magnet includes: 12.0 at % to 15.0 at % of R, which is at least one of the rare-earth elements that include Y and of which at least 50 at % is Pr and/or Nd; 5.5 at % to 6.5 at % of B; 0.08 at % to 0.35 at % of Cu; 0.04 at % to less than 0.2 at % of Mn; at most 2 at % (including 0 at %) of M, which is one, two, or more elements that are selected from the group consisting of Al, Ti, V, Cr, Ni, Zn, Ga, Zr, Nb, Mo, Ag, In, Sn, Hf, Ta, W, Au, Pb and Bi; and T as the balance, which is either Fe alone or Fe and Co and of which at most 20 at % is Co if T includes both Fe and Co.', 'RT-Cu-Mn-B基烧结磁体包括：12.0at％至15.0at％的R，其为包含Y的至少一种稀土元素，并且其中至少50at％是Pr和/或钕; B为5.5 at％至6.5 at％; Cu含量为0.08原子％至0.35原子％; Mn为0.04at％至小于0.2at％; M的至多2at％（包括0at％），其为选自Al，Ti，V，Cr，Ni，Zn，Ga，Zr，Nb，Mo的一种，两种或更多种元素。 ，Ag，In，Sn，Hf，Ta，W，Au，Pb和Bi;和T作为余量，它是单独的Fe或Fe和Co，如果T包括Fe和Co，则其中最多20at％是Co.', 'US12/996828', 1244649600, 'US8092619B2', 1326124800, 1303920000, NULL, 1326124800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 17, 3, 0, 0, 0, NULL, NULL, NULL, '2008155473', 'JP', 1213286400, 10, 10, NULL, NULL, 11, 10, 6, 7, 4, NULL, '850', NULL, 'SHEEHAN, JOHN', NULL, 'JP1989219143A | JP2003183764A | JP2004303909A | US20010023716A1 | US20080271821A1 | US20080274009A1 | US20110025440A1 | US4770723A | US4859255A | US7740715B2 | US7789933B2', 'CN104240887A | CN104240887B | CN104249156A | CN104249156B | CN104252940A | CN104252940B | US20110025440A1 | US20180025818A1 | US20180096762A1 | US8317941B2', 'English Translation of Japanese Patent Document 2003-183764 A1 (Published Jul. 3, 2003). cited by examiner . | Machine Translation Japanese Document No. 2003-183764, Jul. 3, 2003. | Machine Translation Japanese Document No. 2003-183764, Jul. 3, 2003. cited by examiner . | Official Communication issued in corresponding International Patent Application No. PCT/JP2009/002648, mailed on Jan. 20, 2011. cited by other .', 1, '\\20220510\\761e338c11234f44b633da54286c9ca5.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39428, 39430, 39429, 11);
INSERT INTO `os_patent` VALUES (23078, 'R-T-Cu-Mn-B系焼結磁石', 'R-T-Cu-Mn-B系焼结磁石', 'JP4831253B2', 'R:12.0原子%以上、15.0原子%以下、ここでRは、Yを含む希土類元素であって、Rのうち50原子%以上がPrおよび/またはNd、B:5.5原子%以上、6.5原子%以下、Cu:0.08原子%以上、0.35原子%以下、Mn:0.04原子%以上、0.2原子%未満、M:2原子%以下(0原子%を含む)、ここでMは、Al、Ti、V、Cr、Ni、Zn、Ga、Zr、Nb、Mo、Ag、In、Sn、Hf、Ta、W、Au、Pb、Biのうち、1種または2種以上、T:残部、ここでTは、FeまたはFeとCoであり、FeとCoの場合はCoはTのうち20原子%以下、からなる、R-T-Cu-Mn-B系焼結磁石。', 'R：12.0at％以上，15.0at％以下，其中R是含有Y的稀土元素，并且至少50at％的R是Pr和/或Nd，B：5.5at％或更多，6.5at％以下，Cu：0.08原子％以上，0.35原子％以下，Mn：0.04原子％以上，0.2原子％以下，M：2原子％以下（包括0原子％），M为Al，Ti，V Cr，Ni，Zn，Ga，Zr，Nb，Mo，Ag，In，Sn，Hf，Ta，W，Au，Pb，Bi，它们中的一种或多种，​​T：剩余，其中T是包含Fe或Fe和Co的RT-Cu-Mn-B基烧结磁体，在Fe和Co的情况下，Co为20at％或更少。', 'JP2010516761', 1244649600, 'JP4831253B2', 1323187200, 1320854400, NULL, 1317312000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 22, 3, 0, 0, 0, NULL, NULL, NULL, '2008155473', 'JP', 1213286400, 10, 10, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '山田 倍司', NULL, NULL, NULL, NULL, 1, '\\20220510\\6d926a477b3a4a1c8862a112113b78c2.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39428, 39430, 39429, 11);
INSERT INTO `os_patent` VALUES (23079, 'R-t-cu-mn-b type sintered magnet', 'R-t-cu-mn-b型烧结磁铁', 'EP2302646B1', 'An R-T-Cu-Mn-B based sintered magnet includes: 12.0 at% to 15.0 at% of R, which is at least one of the rare-earth elements that include Y and of which at least 50 at% is Pr and/or Nd; 5.5 at% to 6.5 at% of B; 0.08 at% to 0.35 at% of Cu; 0.04 at% to less than 0.2 at% of Mn; at most 2 at% (including 0 at%) of M, which is one, two, or more elements that are selected from the group consisting of Al, Ti, V, Cr, Ni, Zn, Ga, Zr, Nb, Mo, Ag, In, Sn, Hf, Ta, W, Au, Pb and Bi; and T as the balance, which is either Fe alone or Fe and Co and of which at most 20 at% is Co if T includes both Fe and Co.', 'RT-Cu-Mn-B基烧结磁体包括：12.0at％至15.0at％的R，其为包含Y的至少一种稀土元素，并且其中至少50at％是Pr和/或钕;B为5.5 at％至6.5 at％;Cu含量为0.08原子％至0.35原子％;Mn为0.04at％至小于0.2at％;M为至多2at％（包括0at％），其为选自Al，Ti，V，Cr，Ni，Zn，Ga，Zr，Nb，Mo的一种，两种或更多种元素。，Ag，In，Sn，Hf，Ta，W，Au，Pb和Bi;和T作为余量，它是单独的Fe或Fe和Co，如果T包括Fe和Co，则其中最多20at％是Co.', 'EP2009762274', 1244649600, 'EP2302646B1', 1540915200, 1301414400, NULL, 1540915200, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 25, 3, 0, 0, 0, NULL, NULL, NULL, '2008155473', 'JP', 1213286400, 10, 10, NULL, NULL, 8, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, 'CN101071667A | EP0302947A1 | JP1984089401A | JP1985034005A | JP2003183764A | JP2004303909A', NULL, NULL, 1, '\\20220510\\10dbda584d744a5299b282fdd66e5a3b.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, '有效:DE,FR,GB,NL | 失效:NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,HU,SE,SI,MC,SK,IE,EE,CH,MT,IS,IT,GR,ES,AT,CY,CZ,PL,RO,LI,TR | 未确认:MK', 39428, 39430, 39429, 11);
INSERT INTO `os_patent` VALUES (23080, 'SINTERMAGNET DES R-T-CU-MN-B-TYPS', 'R-T-Cu-Mn-B型烧结磁体', 'DE602009055376T2', 'Disclosed is an R-T-Cu-Mn-B type sintered magnet comprising the following components: R: 12.0 to 15.0 at.% (inclusive) [wherein R represents a rare earth element including Y, provided that Pr and/or Nd makes up 50 at.% or more of the total quantity of R], B: 5.5 to 6.5 at.% (inclusive), Cu: 0.08 to 0.35 at.% (inclusive), Mn: not less than 0.04 at.% and less than 0.2 at.%, M: not more than 2 at.% (including 0 at.%) [wherein M represents at least one element selected from Al, Ti, V, Cr, Ni, Zn, Ga, Zr, Nb, Mo, Ag, In, Sn, Hf, Ta, W, Au, Pb and Bi], and T: the remainder [wherein T comprises Fe alone or both Fe and Co, provided that Co makes up 20 at.% or less of the total quantity of T when T comprises both Fe and Co].', '本发明公开了一种RT-Cu-Mn-B型烧结磁体，其包含以下组分：R：12.0至15.0原子％（含）[其中R表示包含Y的稀土元素，条件是Pr和/或Nd构成50R 1总量的％或更多，B：5.5至6.5原子％（含），Cu：0.08至0.35原子％（含），Mn：不小于0.04原子％且小于0.2at。％，M：不大于2at。％（包括0at。％）[其中M代表选自Al，Ti，V，Cr，Ni，Zn，Ga，Zr，Nb，Mo的至少一种元素，Ag，In，Sn，Hf，Ta，W，Au，Pb和Bi]和T：余量[其中T仅包含Fe或Fe和Co两者，条件是Co占总量的20％。或更少）T含有Fe和Co时的T量。', 'DE602009055376', 1244649600, 'DE602009055376T2', 1540915200, 1540915200, NULL, 1540915200, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 36, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 39431, 39430, 39432, 11);
INSERT INTO `os_patent` VALUES (23081, '耐食性磁石およびその製造方法', '耐腐蚀磁铁及其制造方法', 'JP4586937B2', '本発明の課題は、リン酸塩被膜などの従来の化成被膜よりも耐食性に優れた化成被膜を表面に有するR-Fe-B系焼結磁石およびその製造方法を提供することである。その解決手段としての本発明の耐食性磁石は、R-Fe-B系焼結磁石(Rは少なくともNdを含む希土類元素)の表面に、構成元素としてZr、Nd、フッ素、酸素を少なくとも含有する化成被膜(但しリンは含有しない)を直接的に有することを特徴とする。', '本发明的一个目的是提供一种R-Fe-B基烧结磁体,该烧结磁体具有优于常规复合膜的优异耐腐蚀性,例如磷酸膜和制造方法。作为溶液装置的耐腐蚀性磁体是由Zr,Nd,氟,氧的至少一组成型元素作为组成元素的共同载物,作为R-Fe-B的烧结磁体的表面上的组成元素(含有含有至少ND)的稀土元素。其特征在于它直接具有涂层(但不是磷)。', 'JP2010506724', 1246291200, 'JP4586937B2', 1290528000, 1290528000, NULL, 1284652800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 3, 0, 0, 0, NULL, NULL, NULL, '2008176029 | 2008176033', 'JP | JP', 1215100800, 16, 16, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '山田 倍司', NULL, 'JP1992022008A | JP2000199074A | JP2004221196A | JP2007116142A | JP2008270699A | WO2002103080A1', NULL, NULL, 1, '\\20220510\\aacef75318d645eda04cc8241088f13c.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39433, 39435, 39434, 17);
INSERT INTO `os_patent` VALUES (23082, 'Corrosion-resistant magnet and method for producing the same', '耐腐蚀磁铁及其制造方法', 'US8641833B2', 'An object of the present invention is to provide an R—Fe—B based sintered magnet having on a surface thereof a chemical conversion film with higher corrosion resistance than a conventional chemical conversion film such as a phosphate film, and a method for producing the same. The corrosion-resistant magnet of the present invention as a means for achieving the object is characterized by comprising a chemical conversion film containing at least Zr, Nd, fluorine, and oxygen as constituent elements and not containing phosphorus directly on a surface of an R—Fe—B based sintered magnet, wherein R is a rare-earth element including at least Nd.', '本发明的目的是提供一种R-Fe-B系烧结磁铁及其制造方法，该烧结磁铁的表面具有比以往的化学转化膜如磷酸盐膜具有更高耐腐蚀性的化学转化膜。 。作为实现该目的的手段，本发明的耐腐蚀性磁铁的特征在于，含有至少含有Zr，Nd，氟和氧作为构成元素且不在R-表面直接含有磷的化学转化膜。 Fe-B基烧结磁体，其中R是至少包含Nd的稀土元素。', 'US13/002571', 1246291200, 'US8641833B2', 1391443200, 1312387200, NULL, 1391443200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 3, 0, 0, 0, NULL, NULL, NULL, '2008176029 | 2008176033', 'JP | JP', 1215100800, 16, 16, NULL, NULL, 10, 0, 0, 0, 2, NULL, '875', NULL, 'ZHENG, LOIS', NULL, 'JP1992042517A | JP2000199074A | JP2002198241A | JP2004221196A | JP2008270699A | US20020036029A1 | US20070071979A1 | US6281774B1 | WO2002103080A1', NULL, 'International Search Report for International Application No. PCT/JP2009/061913 dated Dec. 1, 2009. cited by applicant | Office Action issued Sep. 3, 2013 corresponding to Japanese patent application No. 2010-128628. cited by applicant.', 1, '\\20220510\\9323803ae2114e11a42b798abf156b56.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, NULL, 39433, 39435, 39434, 17);
INSERT INTO `os_patent` VALUES (23083, 'Corrosion-resistant magnet and method for producing the same', '耐腐蚀磁铁及其制造方法', 'EP2299455B1', 'An object of the present invention is to provide an R-Fe-B based sintered magnet having on a surface thereof a chemical conversion film with higher corrosion resistance than a conventional chemical conversion film such as a phosphate film, and a method for producing the same. The corrosion-resistant magnet of the present invention as a means for achieving the object is characterized by comprising a chemical conversion film containing at least Zr, Nd, fluorine, and oxygen as constituent elements and not containing phosphorus directly on a surface of an R-Fe-B based sintered magnet, wherein R is a rare-earth element including at least Nd.', '本发明的目的是提供一种R-Fe-B系烧结磁铁及其制造方法，该烧结磁铁的表面具有比以往的化学转化膜如磷酸盐膜具有更高耐腐蚀性的化学转化膜。 。作为实现该目的的手段，本发明的耐腐蚀性磁铁的特征在于，含有至少含有Zr，Nd，氟和氧作为构成元素且不在R-表面直接含有磷的化学转化膜。 Fe-B基烧结磁体，其中R是至少包含Nd的稀土元素。', 'EP2009773456', 1246291200, 'EP2299455B1', 1537286400, 1300809600, NULL, 1537286400, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 16, 3, 0, 0, 0, NULL, NULL, NULL, '2008176029 | 2008176033', 'JP | JP', 1215100800, 16, 16, NULL, NULL, 8, 0, 0, 0, 0, NULL, '874', NULL, NULL, NULL, 'EP1669475A1 | JP2000199074A | JP2004221196A | JP2008270699A | US20080054738A1 | US4770723A | WO2002103080A1', NULL, NULL, 1, '\\20220510\\038745daa1bb4e18b7d4b5df653d924d.png', NULL, NULL, 1, NULL, NULL, 15, NULL, NULL, '有效:DE | 失效:NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,HU,SE,SI,MC,SK,GB,IE,EE,CH,MT,IS,IT,GR,ES,AT,CY,CZ,PL,RO,LI,TR,NL | 未确认:MK', 39433, 39435, 39434, 17);
INSERT INTO `os_patent` VALUES (23084, 'KORROSIONSBESTÄNDIGER MAGNET UND VERFAHREN ZU SEINER HERSTELLUNG', '耐腐蚀磁体和生产方法', 'DE602009054632T2', 'Provided is an R-Fe-B based sintered magnet having on the surface thereof a conversion film that has superior corrosion resistance to conventional conversion films such as a phosphate film, and a method for producing such an R-Fe-B based sintered magnet.  The corrosion resistant magnet is characterized in that a conversion film including at least Zr, Nd, fluorine, and oxygen but not phosphorus as constituent elements is directly formed on the surface of an R-Fe-B based sintered magnet in which R is a rare earth element containing at least Nd.', '本发明提供一种R-Fe-B系烧结磁铁，其表面具有对以往的转化膜如磷酸盐膜具有优异耐腐蚀性的转化膜，以及该R-Fe-B系烧结磁铁的制造方法。 a0耐腐蚀磁体的特征在于，在R-Fe-B基烧结磁体的表面上直接形成至少包含Zr，Nd，氟和氧而非磷作为构成元素的转化膜，其中R是稀有的地球元素至少含有Nd。', 'DE602009054632', 1246291200, 'DE602009054632T2', 1537286400, 1537286400, NULL, 1537286400, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 27, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '855', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39436, 39435, 39437, 17);
INSERT INTO `os_patent` VALUES (23085, 'Corrosion-resistant magnet and method for producing the same', '耐腐蚀磁铁及其制造方法', 'US9275794B2', 'An object of the present invention is to provide an R—Fe—B based sintered magnet that exhibits excellent corrosion resistance and maintains excellent adhesion strength to an adherend even under severe conditions, and a method for producing the same. A corrosion-resistant magnet of the present invention as a means for achieving the object is characterized by comprising a chemical conversion film containing at least Zr, V, Al, fluorine, and oxygen as constituent elements and not containing phosphorus over a surface of an R—Fe—B based sintered magnet with a film made of Al or an alloy thereof therebetween.', '本发明的目的是提供一种R-Fe-B系烧结磁铁及其制造方法，该烧结磁铁即使在苛刻的条件下也具有优异的耐腐蚀性，对被粘物的粘接强度也优异。作为实现该目的的手段，本发明的耐腐蚀性磁铁的特征在于，含有至少含有Zr，V，Al，氟和氧作为构成元素且在R的表面不含磷的化学转化膜。 -Fe-B基烧结磁体，其间具有由Al或其合金制成的膜。', 'US13/056387', 1248883200, 'US9275794B2', 1456761600, 1320854400, NULL, 1456761600, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 5, 0, 0, 0, NULL, NULL, NULL, '2008196150', 'JP', 1217347200, 7, 7, NULL, NULL, 21, 0, 0, 0, 3, NULL, '875', NULL, 'LOUIE, MANDY', NULL, 'JP2000150216A | JP2001335921A | JP2003171778A | JP2005078821A | JP2005210094A | JP2006013398A | US20010050029A1 | US20040191545A1 | US20050109426A1 | US20050175798A1 | US20080053573A1 | US20080211098A1 | US20120208363A1 | US4495221A | US4497876A | US5743971A | US6251196B1 | US6281774B1 | US6733896B2 | WO2006009137A1 | WO2008140054A1', NULL, 'English Abstract of JP 2003171778A. cited by examiner | International Search Report for International Application No. PCT/JP2009/063566 dated Oct. 20, 2009. cited by applicant. | Machine translation of JP2006-013399 accessed May 1, 2015. cited by examiner', 1, '\\20220510\\242e1af6096b4afab3226624ed9b2e50.png', NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 39438, 39440, 39439, 7);
INSERT INTO `os_patent` VALUES (23086, '耐食性磁石およびその製造方法', '耐腐蚀磁铁及其制造方法', 'JP4591631B2', '本発明の課題は、過酷条件下においても優れた耐食性を発揮するとともに接着対象との間で優れた接着強度を保持するＲ−Ｆｅ−Ｂ系焼結磁石およびその製造方法を提供することである。その解決手段としての本発明の耐食性磁石は、Ｒ−Ｆｅ−Ｂ系焼結磁石の表面に、Ａｌまたはその合金からなる被膜を介して、構成元素としてＺｒ、Ｖ、Ａｌ、フッ素、酸素を少なくとも含有する化成被膜（但しリンは含有しない）を有することを特徴とする。', '本发明的目的是提供一种R-Fe-B系烧结磁铁及其制造方法，该烧结磁铁即使在苛刻的条件下也显示出优异的耐腐蚀性，并且与粘接对象保持优异的粘接强度。 。作为解决该问题的手段的本发明的耐腐蚀磁体至少包括Zr，V，Al，氟和氧作为R-Fe-B基烧结磁体表面上的构成元素，通过由Al或其合金制成的膜。其特征在于具有包含的转化涂层（但不含磷）。', 'JP2010522525', 1248883200, 'JP4591631B2', 1291132800, 1291132800, NULL, 1285257600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 5, 0, 0, 0, NULL, NULL, NULL, '2008196150', 'JP', 1217347200, 7, 7, NULL, NULL, 9, 0, 0, 0, 0, NULL, NULL, NULL, '久保田 昌晴', NULL, 'JP2000150216A | JP2000199074A | JP2001335921A | JP2002198241A | JP2005078821A | JP2005210094A | JP2006013398A | WO2006009137A1 | WO2008140054A1', NULL, NULL, 1, '\\20220510\\8000dc4ed8624ec7b0540aeccc1cd9ad.png', NULL, NULL, 1, NULL, NULL, 11, NULL, NULL, NULL, 39438, 39440, 39439, 7);
INSERT INTO `os_patent` VALUES (23087, 'Self-pinned spin valve magnetoresistance effect film and magnetic sensor using the same, and rotation angle detection device', '自钉式自旋阀磁阻效应薄膜及使用该薄膜的磁传感器、旋转角度检测装置', 'US9007055B2', 'Provided are a self-pinned spin valve magnetoresistance effect film, a magnetic sensor using the same, and a rotation angle detection device. The self-pinned spin valve magnetoresistance effect film has a strong coupling magnetic field in a pinned layer, a small reduction in the change in resistance, and superior resistance to magnetic fields without reducing the coercive force in a first ferromagnetic layer, which is a pinned layer in the film, even when exposed to a strong external magnetic field. By inserting a non-magnetic layer between a ground layer and a pinned layer to form the spin valve magnetoresistance effect film, the self-pinned spin valve magnetoresistance effect film having superior resistance to magnetic fields, a magnetic sensor using the same, and a rotation angle detection device are obtained.', '本发明提供一种自钉扎自旋阀磁阻效应膜，使用该膜的磁传感器和旋转角度检测装置。自钉自旋阀磁阻效应膜在钉扎层中具有强耦合磁场，电阻变化小幅减小，并且在不降低第一铁磁层中的矫顽力的情况下具有优异的磁场阻抗，这是固定的薄膜中的一层，即使暴露在强大的外部磁场中也是如此。通过在接地层和钉扎层之间插入非磁性层以形成自旋阀磁阻效应膜，具有优异磁阻的自钉扎自旋阀磁阻效应膜，使用该膜的磁传感器和旋转获得角度检测装置。', 'US13/057076', 1249833600, 'US9007055B2', 1428940800, 1309968000, NULL, 1428940800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 25, 3, 0, 0, 0, NULL, NULL, NULL, '2008235477', 'JP', 1221148800, 8, 8, NULL, NULL, 29, 1, 1, 1, 7, NULL, '880', NULL, 'KOVAL, MELISSA', 'ARMSTRONG, STEPHEN G', 'GB2400719A | JP1997184703A | JP1998321930A | JP2002204002A | JP2002519873A | JP2003086865A | JP2005044489A | JP2005268570A | JP2006005282A | JP2006208255A | JP2812042B2 | JP3033934B2 | JP3040750B2 | US20020021537A1 | US20020086182A1 | US20040086752A1 | US20040207959A1 | US20050018363A1 | US20050195536A1 | US20050207072A1 | US20050280953A1 | US5856897A | US6052262A | US6452761B1 | US6560078B1 | US6665153B1 | US6836392B2 | WO2008062778A1', 'US10050193B1', 'International Preliminary Report on Patentability issued in International Application No. PCT/JP2009/003833 on May 10, 2011 (with translation). cited by applicant | Jan. 6, 2015 Office Action issued in Japanese Application No. 2010-528602. | Jan. 6, 2015 Office Action issued in Japanese Application No. 2010-528602. cited by applicant. | Leal, J.L. et al., \"Spin Valves Exchange Biased By Co/Ru/Co Synthetic Antiferromagnets,\" Journal of Applied Physics, Apr. 1, 1998, pp. 3720-3723, vol. 83, No. 7. cited by applicant | Machine English translation of International Patent Application Publication to Applicants Aimuta K, et al. WO 2008/062778 A1, May 29, 2008. Translation of Description, created on May 18, 2013. cited by examiner | Office Action dated Aug. 13, 2013 issued in Japanese Patent Application No. 2010-528602 (with translation). | Office Action dated Dec. 24, 2013 issued in Japanese Patent Application No. 2010-528602 (with English translation). cited by applicant', 1, '\\20220510\\3341e3ed48b446aa845201cc50411bff.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39441, 39443, 39442, 9);
INSERT INTO `os_patent` VALUES (23088, 'Use of a self-pinned spin valve magnetoresistance effect film', '使用自固定自旋阀磁阻效应薄膜', 'EP2323189B1', 'Provided are a self-pinned spin valve magnetoresistance effect film, a magnetic sensor using the same, and a rotation angle detection device. The self-pinned spin valve magnetoresistance effect film has a strong coupling magnetic field in a pinned layer, a small reduction in the change in resistance, and superior resistance to magnetic fields without reducing the coercive force in a first ferromagnetic layer, which is a pinned layer in the film, even when exposed to a strong external magnetic field. By inserting a non-magnetic layer between a ground layer and a pinned layer to form the spin valve magnetoresistance effect film, the self-pinned spin valve magnetoresistance effect film having superior resistance to magnetic fields, a magnetic sensor using the same, and a rotation angle detection device are obtained.', '本发明提供一种自钉扎自旋阀磁阻效应膜，使用该膜的磁传感器和旋转角度检测装置。自钉扎自旋阀磁阻效应膜在钉扎层中具有强耦合磁场，电阻变化小，并且在不降低第一铁磁层中的矫顽力的情况下具有优异的磁场阻抗，这是固定的薄膜中的一层，即使暴露在强大的外部磁场中也是如此。通过在接地层和钉扎层之间插入非磁性层以形成自旋阀磁阻效应膜，具有优异磁阻的自钉扎自旋阀磁阻效应膜，使用该膜的磁传感器和旋转获得角度检测装置。', 'EP2009812833', 1249833600, 'EP2323189B1', 1548777600, 1305648000, NULL, 1548777600, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 29, 3, 0, 0, 0, NULL, NULL, NULL, '2008235477', 'JP', 1221148800, 8, 8, NULL, NULL, 19, 0, 0, 0, 1, NULL, '884', NULL, NULL, NULL, 'GB2400719A | JP1998321930A | JP2002204002A | JP2002519873A | JP2003086865A | JP2005044489A | JP2006005282A | JP2006208255A | US20020021537A1 | US20050018363A1 | US20050195536A1 | US20050207072A1 | US5856897A | US6452761B1 | US6665153B1', NULL, 'J. L. LEAL,Spin valves exchange biased by Co/Ru/Co synthetic antiferromagnets,Journal of Applied Physics\'\', (U.S.A.),vol.83,no.7,3720', 1, '\\20220510\\b8ae6054e8cb48ec89b351806dc4021f.png', NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, '失效:NO,DE,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,HU,SE,SI,MC,SK,SM,GB,IE,EE,CH,MT,IS,IT,GR,ES,AT,CY,CZ,PL,RO,LI,TR,NL | 未确认:MK', 39441, 39443, 39442, 9);
INSERT INTO `os_patent` VALUES (23089, 'R-T-B系永久磁石の製造方法', 'R-T-B系永久磁石の制造方法', 'JP5288276B2', '【課題】Ga、Dy、Tbを含まない元素をR-T-B系合金粉末と混合しHDDR処理することで、HDDR磁粉の保磁力を向上させることを目的とする。\n\n【解決手段】本発明のR-T-B系永久磁石の製造方法は、組成中の希土類量が29mass%超40mass%以下およびB量が0.3mass%以上2mass%以下であるR-T-B系合金粉末を用意する工程と、少なくともZnを30mass%以上含みGa、Dy、およびTbを含まない金属、合金のいずれかの粉末であるZn含有粉末を用意する工程と、前記R-T-B系合金粉末およびZn含有粉末を、Znが全体の0.05mass%以上1.5mass%以下となるように混合して混合粉末とする工程と、前記混合粉末をHDDR処理する工程と、を含むことを特徴とする。\n\n【選択図】図1', '要解决的问题：通过将不含Ga，Dy和Tb的元素与R-T-B型合金粉末混合并进行HDDR处理来提高HDDR磁粉的矫顽力。\n\n本发明的RTB系永久磁铁的制造方法包括制备组成中的稀土含量超过29质量％~40质量％以下，B量为0.3质量％以上且2质量％以下的RTB合金粉末的工序。制备含有至少Zn的量为30质量％或更多的含锌粉末，并且是不含Ga，Dy和Tb的金属和合金中的任何一种的粉末;制备RTB合金粉末和Zn-质量，以获得0.05质量％以上且1.5质量％以下的混合粉末，并对混合粉末进行HDDR处理。\n\n点域1', 'JP2009198029', 1251388800, 'JP5288276B2', 1378828800, 1299686400, NULL, 1371139200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 14, 0, 0, 0, 0, NULL, NULL, NULL, '塩▲崎▼ 義晃', NULL, 'JP1987030845A | JP1990217406A | JP1996031677A | JP2000096102A | JP2001006909A | JP2001355050A | JP2002093610A | JP2002105503A | JP2004111944A | JP2007129151A | JP2008069415A | WO2006085581A1 | WO2007135981A1 | WO2008065903A1', NULL, NULL, 1, '\\20220510\\64b5091e5df64923aae3eb604e55ed17.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39444, 39446, 39445, 2);
INSERT INTO `os_patent` VALUES (23090, 'R-T-B系永久磁石の製造方法', 'R-T-B系永久磁石の制造方法', 'JP5288277B2', '【課題】Ga、Dy、Tb等を含まない元素をHDDR磁粉外部から供給することで、HDDR磁粉の保磁力を向上させることを目的とする。\n\n【解決手段】本発明のR-T-B系永久磁石の製造方法は、HDDR処理によって作製され、その組成中の希土類量が29mass%超40mass%以下およびB量が0.3mass%以上2mass%以下であるR-T-B系永久磁石粉末を用意する工程と、少なくともZnを30mass%以上含みGa、Dy、およびTbを含まない金属、合金のいずれかの粉末であるZn含有粉末を用意する工程と、前記異方性R-T-B系永久磁石粉末およびZn含有粉末を、Znが全体の0.05mass%以上1.5mass%以下となるように混合して混合粉末とする工程と、前記混合粉末を真空中あるいは不活性ガス中で450℃以上900℃未満の温度で拡散熱処理する工程と、を含むことを特徴とする。\n\n【選択図】図1', '要解决的问题：通过从HDDR磁铁粉末的外部提供不含Ga，Dy，Tb等的元素来改善HDDR磁粉的矫顽力。\n\n本发明的RTB永磁体的制造方法是通过HDDR处理制造RTB永磁体的方法，其中，组合物中的稀土含量为大于29质量％~40质量％以下，B量为0.3质量％~2质量％。制备永磁体粉末，制备含锌粉末，所述含锌粉末是含有至少一种选自金属和含Z的合金中的至少一种粉末，不含Ga，Dy和Tb，含有至少30质量％的Zn;将永磁体粉末和含Zn粉末混合使得Zn的总含量为0.05质量％以上且1.5质量％以下以制备混合粉末的步骤;以及在450℃或更高的真空或惰性气体中加热混合粉末的步骤并在低于900℃的温度下进行扩散热处理。\n\n点域1', 'JP2009198030', 1251388800, 'JP5288277B2', 1378828800, 1299686400, NULL, 1371139200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 12, 0, 0, 0, 1, NULL, NULL, NULL, '塩▲崎▼ 義晃', NULL, 'JP1987030845A | JP1990217406A | JP1996031677A | JP2000096102A | JP2001355050A | JP2002093610A | JP2002105503A | JP2004111944A | JP2008069415A | WO2006085581A1 | WO2007135981A1 | WO2008065903A1', NULL, 'W. .F. Li et al.:“Coercivity mechanism of hydrogenation disproportionation desorption recombination processed Nd-Fe-B based magnets”:Applied Physics Letters, Vol.93, 052505 (2008)', 1, '\\20220510\\44989b903b8c489fbff20a757541d944.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39447, 39449, 39448, 2);
INSERT INTO `os_patent` VALUES (23091, 'R-T-B based sintered magnet', 'R-T-B基烧结磁体', 'US7740715B2', 'An R-T-B based sintered magnet according to the present invention has a composition comprising: 12 at % to 15 at % of a rare-earth element R; 5.0 at % to 8.0 at % of boron B; 0.1 at % to at % of Al; 0.02 at % to less than 0.2 at % of Mn; and a transition metal T as the balance. The rare-earth element R is at least one element selected from the rare-earth elements, including Y (yttrium), and includes at least one of Nd and Pr. The transition element T includes Fe as its main element.', '根据本发明的R-T-B基烧结磁体具有包含：12at％至15at％的稀土元素R的组合物;硼含量为5.0原子％至8.0原子％; Al含量为0.1at％至at％; Mn为0.02at％至小于0.2at％;和过渡金属T作为平衡。稀土元素R是选自稀土元素中的至少一种元素，包括Y（钇），并且包括Nd和Pr中的至少一种。过渡元素T包括Fe作为其主要元素。', 'US12/560863', 1253030400, 'US7740715B2', 1277136000, 1262793600, NULL, 1277136000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 13, 13, NULL, NULL, 4, 15, 2, 11, 4, NULL, '850', NULL, 'SHEEHAN, JOHN P', NULL, 'EP1705671A2 | US20030098094A1 | US20060213584A1 | US5266128A', 'CN104240887A | CN104240887B | CN104249156A | CN104249156B | US10395823B2 | US11270841B2 | US20110095855A1 | US20130263699A1 | US8092619B2 | US9044834B2 | US9067284B2 | US9095940B2 | US9144865B2 | US9336932B1 | US9663843B2', 'English translation of Official Communication issued in corresponding International Application PCT/JP2007/059373, mailed on Dec. 3, 2009. cited by other. | Official Communication issued in corresponding European Patent Application No. 07742808.4, mailed on Jun. 19, 2009. cited by other . | Tomizawa; \"R-T-B Based Sintered Manet\", U.S. Appl. No. 12/132,689, filed Jun. 4, 2008. | Tomizawa; \"R-T-B Based Sintered Manet\", U.S. Appl. No. 12/132,689, filed Jun. 4, 2008. cited by other .', 1, '\\20220510\\31ba6052265e44119103fb8352bbf0b2.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39269, 39271, 39270, 14);
INSERT INTO `os_patent` VALUES (23092, 'R-T-B based sintered magnet', 'R-T-B基烧结磁体', 'US7789933B2', 'An R-T-B based sintered magnet according to the present invention comprises: 12 at % to 15 at % of a rare-earth element R; 5.0 at % to 8.0 at % of boron B; 0.02 at % to 0.2 at % of Mn; and a transition metal T as the balance. The rare-earth element R is at least one element selected from the rare-earth elements, including Y (yttrium), and includes 0.2 at % to 8 at % of Pr. And the transition element T includes Fe as its main element.', '本发明的R-T-B系烧结磁铁包含：12原子％〜15原子％的稀土元素R; 5.0原子％〜8.0原子％的硼B; 0.02at％〜0.2at％的Mn;和作为余量的过渡金属T.稀土元素R是选自包括Y（钇）的稀土元素中的至少一种元素，并且包括0.2at％至8at％的Pr。过渡元素T包括Fe作为其主要元素。', 'US12/562336', 1253203200, 'US7789933B2', 1283788800, 1263398400, NULL, 1283788800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 13, 13, NULL, NULL, 4, 14, 1, 10, 4, NULL, '850', NULL, 'SHEEHAN, JOHN P', NULL, 'EP1705671A2 | US20030098094A1 | US20060213584A1 | US4917778A', 'CN104240887A | CN104240887B | CN104249156A | CN104249156B | US10395823B2 | US11270841B2 | US20110095855A1 | US8092619B2 | US8572830B2 | US9044834B2 | US9067284B2 | US9095940B2 | US9144865B2 | US9336932B1', 'English translation of Official Communication issued in corresponding International Application PCT/JP2007/059384, mailed on Dec. 3, 2009. cited by other. | Official Communication issued in corresponding European Patent Application No. 07742819.1, mailed on Jun. 18, 2009. cited by other . | Tomizawa; \"R-T-B Based Sintered Manet\"; U.S. Appl. No. 12/132,738, filed Jun. 4, 2008. | Tomizawa; \"R-T-B Based Sintered Manet\"; U.S. Appl. No. 12/132,738, filed Jun. 4, 2008. cited by other .', 1, '\\20220510\\c3655de87f6745cb8cdf6e28d076745f.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39272, 39274, 39273, 14);
INSERT INTO `os_patent` VALUES (23093, '耐食性R-Fe-B系焼結磁石の製造方法', '耐腐蚀R-Fe-B基烧结磁体的制备方法', 'JP5381577B2', '【課題】 過酷条件下においても優れた耐食性を発揮するR-Fe-B系焼結磁石の製造方法を提供すること。\n\n【解決手段】 R-Fe-B系焼結磁石の表面に、水素含有量が50ppm以上のAlまたはその合金からなる被膜を蒸着形成した後、蒸着形成されたAlまたはその合金からなる被膜に対してピーニング処理を行うことを特徴とする。\n\n【選択図】図2', '要解决的问题提供一种制造R-Fe-B基烧结磁体的方法，即使在恶劣的条件下也能表现出优异的耐腐蚀性。\n\n在R-Fe-B基烧结磁体的表面上蒸发并形成由氢或含量为50ppm或更多的Al合金制成的涂膜，然后在蒸发的Al或其合金的表面上形成涂膜。并进行喷丸处理。\n\n.The', 'JP2009227051', 1254240000, 'JP5381577B2', 1389110400, 1302710400, NULL, 1381420800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '久保田 昌晴', NULL, 'JP1988077103A | JP1993078798A | JP2001032062A | JP2001335921A | JP2003027217A | JP2005191276A | JP2006274424A', NULL, NULL, 1, '\\20220510\\bcaac7ac5cc348219e7f834fb4b2fff6.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39450, 39452, 39451, 2);
INSERT INTO `os_patent` VALUES (23094, 'Method and machine of making rare-earth alloy granulated powder and method of making rare-earth alloy sintered body', '稀土合金造粒粉的制造方法、机械及稀土合金烧结体的制造方法', 'US7931756B2', 'A method of making a rare-earth alloy granulated powder according to the present invention includes the steps of: preparing a rare-earth alloy powder; generating remnant magnetization in the powder; and granulating the powder by utilizing agglomeration force produced by the remnant magnetization of the powder. Since the agglomeration force produced by the remnant magnetization is utilized, the addition of a granulating agent may be omitted.', '根据本发明的制造稀土合金造粒粉末的方法包括以下步骤：制备稀土合金粉末;在粉末中产生残余磁化;通过利用粉末的残余磁化产生的凝聚力使粉末粒化。由于利用了残余磁化产生的凝聚力，因此可以省略添加造粒剂。', 'US12/573374', 1254672000, 'US7931756B2', 1303747200, 1264608000, NULL, 1303747200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 18, 2, 0, 0, 0, NULL, NULL, NULL, '2001362436 | 2002298621 | PCT/JP2002/012399', 'JP | JP | WO', 1006876800, 10, 16, NULL, NULL, 30, 6, 0, 1, 6, NULL, '849', NULL, 'SHEEHAN, JOHN P', NULL, 'EP0270934A1 | EP0270934B1 | EP0429881A2 | EP0991086A1 | EP1020285A2 | JP1974119193A | JP1976020593A | JP1982124599A | JP1986179801A | JP1988110521A | JP1988237402A | JP1989114008A | JP1989127643A | JP1992071632A | JP1992100532A | JP1994028213A | JP1994039267A | JP1998058198A | JP1998140202A | JP1999131101A | JP2001137684A | US4770723A | US4792368A | US5000800A | US5124100A | US5383978A | US5575830A | US5666635A | US6187259B1 | US7214343B2', 'US10375901B2 | US10674681B2 | US20100034688A1 | US20130049910A1 | US8128757B2 | US8823478B2', 'ASM Materials Engineering Dictionary, 1992, p. 369. | ASM Materials Engineering Dictionary, 1992, p. 369. cited by examiner . | Kishimoto, et al. \"Magnetic properties of sintered sendust alloys using powders granulated by spray drying method\", Journal of Materials Science; vol. 38, No. 16; Abstract; Aug. 2003. cited by other . | Machine Translation of JP 10-140202. | Machine Translation of JP 10-140202. cited by examiner . | Official Communication and Translation of Official Communication, Issued Aug. 1, 2005, German patent application file No. 102 97 484.5-24. cited by other.', 1, '\\20220510\\afd7ae59c43f48c189b2dfb69126f5f6.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 38962, 38940, 38939, 16);
INSERT INTO `os_patent` VALUES (23095, 'METODO PARA HACER IMAN SINTERIZADO DE NEODIMIO FIERRO BORO.', '制备钕核细胞的烧结模型的方法。', 'MX315259B', 'La invención tiene como objetivo proporcionar un proceso para la producción de imanes sinterizados de NdFeB los cuales pueden dar lugar a una fuerza coercitiva más alta mejorando el efecto y dispersión más pequeña del efecto y lo cual permite la producción de los imanes a un bajo costo. Un proceso para la producción de imanes sinterizados de NdFeB que comprende aplicar un polvo que contiene Dy y/o Tb a un imán sinterizado de NdFeB y calentar el imán resultante para difuminar el Rh contenido en el polvo en el imán a través de los límites de grano, caracterizado en que el polvo contiene 0.5 hasta 50% en peso de Al metálico y el oxígeno contenido del imán sinterizado de NdFeB es 0.4% en peso o inferior.', '本发明的目的是提供一种生产烧结NdFeB磁体的方法，该方法可以通过改善效果和减小该效应的分散而产生更高的矫顽力，并且允许以低成本生产磁体。一种用于生产包括将含有Dy和/或Tb的NdFeB烧结磁体的粉末和加热得到的磁体以扩散的Rh在通过限制所述磁铁中所含的粉末烧结钕铁硼磁体的过程粒，其特征在于，所述粉末含有0.5〜50％（重量）的金属的Al和NdFeB烧结磁铁的氧含量（重量）或更少的0.4％。', 'MX2009011341', 1255968000, 'MX315259B', 1387382400, 1387382400, NULL, 1384185600, '墨西哥', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 31, 1, 0, 0, 0, NULL, NULL, NULL, '2007121066', 'JP', 1177948800, 19, 19, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 39331, 39333, 39332, 20);
INSERT INTO `os_patent` VALUES (23096, 'Rare earth magnet and method for producing same', '稀土磁铁及其制造方法', 'US8323806B2', 'A rare-earth magnet includes a magnet body made of an R—Fe—B based rare-earth magnet material (where R is at least one rare-earth element) and a metal film that has been deposited on the surface of the magnet body. The magnet further includes a plurality of reaction layers between the magnet body and the metal film. The reaction layers include: a first reaction layer, which contacts with at least some of R2Fe14B type crystals, included in the magnet body, to have received the rare-earth element that has been included in the R2Fe14B type crystals; and a second reaction layer, which is located between the first reaction layer and the metal film and which has a lower rare-earth element concentration than that of the first reaction layer.', '稀土磁体包括由R-Fe-B基稀土磁体材料（其中R是至少一种稀土元素）制成的磁体和沉积在磁体表面上的金属膜。磁体还包括在磁体和金属膜之间的多个反应层。反应层包括：第一反应层，其与包含在磁体中的至少一些R2Fe14B型晶体接触，以接收包含在R2Fe14B型晶体中的稀土元素;第二反应层，位于第一反应层和金属膜之间，其稀土元素浓度低于第一反应层的稀土元素浓度。', 'US12/636341', 1260460800, 'US8323806B2', 1354550400, 1271260800, NULL, 1354550400, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, '2005378905', 'JP', 1135699200, 12, 12, NULL, NULL, 6, 0, 0, 0, 2, NULL, '850', NULL, 'SILVERMAN, STANLEY', 'VIJAYAKUMAR, KALLAMBELLA', 'JP1987192566A | JP2002075716A | JP2004304038A | US5154978A | US6254694B1 | US6275130B1', NULL, 'Fukagawa; \"Rare Earth Magnet and Method for Producing Same\", U.S. Appl. No. 12/145,595, filed Jun. 25, 2008. cited by other | Official Communication issued in corresponding Japanese Patent Application No. 2007-552929, mailed on Sep. 20, 2011. cited by other.', 1, '\\20220510\\05a7f2113edd493cb66be1289fb2f10d.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39219, 39221, 39220, 13);
INSERT INTO `os_patent` VALUES (23097, '表面改質されたR-Fe-B系焼結磁石の製造方法', '表面改性R  -  Fe  -  B基烧结磁体的制备方法', 'JP5445125B2', '【課題】 湿度が変動する環境においても十分な耐食性を有するとともに、優れた磁気特性を有する、表面改質されたR-Fe-B系焼結磁石の製造方法を提供すること。\n\n【解決手段】 磁石の表面に80mass%以上のRを少なくとも含有するRリッチ層を形成する第1工程を行った後、酸素分圧が1×102Pa〜1×105Paで水蒸気分圧が0.1Pa〜1000Pa(但し1000Paを除く)の雰囲気下、200℃〜600℃で熱処理する第2工程を行うことを特徴とする。\n\n【選択図】図4', '要解决的问题提供一种表面改性的R-Fe-B基烧结磁体的制造方法，即使在湿度变化且具有优异磁特性的环境中也具有足够的耐腐蚀性。\n\n在磁体表面上形成含有至少80质量％R的富R层的第一步骤之后，氧气分压为1×10  2  Pa至1×第二步骤是在10  5 的气氛中在200℃至600℃下进行热处理，并且水蒸气分压为0.1Pa至1000Pa（除了1000Pa）。\n\n点域4', 'JP2009297248', 1261929600, 'JP5445125B2', 1395158400, 1310572800, NULL, 1389283200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 9, 0, 0, 0, 0, NULL, NULL, NULL, '中野 浩昌', NULL, 'JP1998223422A | JP2002057052A | JP2006156853A | JP2006210864A | JP2007103523A | JP2007207936A | WO2009041639A1 | WO2009104640A1', NULL, NULL, 1, '\\20220510\\ab75d36bfe8841429e805368b373d2fe.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39453, 39455, 39454, 2);
INSERT INTO `os_patent` VALUES (23098, 'R-T-B系焼結磁石の製造方法', 'R-T-B基烧结磁体的制备方法', 'JP5561170B2', 'Ｒ−Ｔ−Ｂ系合金粉末Ａの粒径とＲ−Ｔ−Ｂ系合金粉末Ｂの粒径が、粒径Ｄ５０で前記Ｒ−Ｔ−Ｂ系合金粉末Ｂの方が前記Ｒ−Ｔ−Ｂ系合金粉末Ａの粒径Ｄ５０より１．０μｍ以上小さく、かつ、Ｒ−Ｔ−Ｂ系合金粉末Ａ中の重希土類元素ＲＨと前記Ｒ−Ｔ−Ｂ系合金粉末Ｂ中の重希土類元素ＲＨとの質量％での含有量の差ΔＲＨが、前記Ｒ−Ｔ−Ｂ系合金粉末Ｂの方が前記Ｒ−Ｔ−Ｂ系合金粉末Ａより４質量％以上高くとなるようにそれぞれ準備する工程と、前記Ｒ−Ｔ−Ｂ系合金粉末Ａと前記Ｒ−Ｔ−Ｂ系合金粉末Ｂとを混合する工程と、前記混合した後のＲ−Ｔ−Ｂ系合金粉末を所定形状の成形体に成形する工程と、前記成形体を焼結する工程とからなるＲ−Ｔ−Ｂ系焼結磁石の製造方法。', 'R-T-B系合金粉末A的粒径和R-T-B系合金粉末B的粒径与粒径D50的R-T-B系合金粉末B的粒径相同。 R-T-B基合金粉末A中的重稀土元素RH和R-T-B基合金粉末B中的重稀土元素RH均具有小于基础合金粉末A的粒径D50的粒径D1.0或更大的粒径D.将R-T-B系合金粉末B的质量％的含量差ΔRH设为比R-T-B系合金粉末A高4质量％以上，和并且，将RTB系合金粉末A和RTB系合金粉末B混合，将混合后的RTB系合金粉末成形为规定形状的成形体。一种RTB系烧结磁铁的制造方法，包括以下步骤：', 'JP2010546597', 1263398400, 'JP5561170B2', 1406649600, 1341417600, NULL, 1403193600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 28, 2, 0, 0, 0, NULL, NULL, NULL, '2009007305 | 2009078230 | 2009277240', 'JP | JP | JP', 1232035200, 11, 11, NULL, NULL, 7, 3, 3, 3, 0, NULL, NULL, NULL, '五貫 昭一', NULL, 'JP1994096928A | JP2000188213A | JP2002356701A | JP2003049234A | JP2006186216A | JP2009032742A | WO2006098204A1', 'CN106158212A | CN106158212B | CN106158213A', NULL, 1, '\\20220510\\b218b7d9db6f4b2cb2d68eb8618a8cbe.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39456, 39458, 39457, 12);
INSERT INTO `os_patent` VALUES (23099, 'Method for producing R-T-B sintered magnet', 'R-T-B烧结磁铁的制造方法', 'US8287661B2', 'A method for producing a sintered R-T-B based magnet includes the steps of: providing R-T-B based alloy powders A and B so that the R-T-B based alloy powder B has a particle size D50 that is smaller by at least 1.0 μm than that of the R-T-B based alloy powder A and that there is a difference ΔRH of at least 4 mass % between the higher content of a heavy rare-earth element RH in the R-T-B based alloy powder B and the lower content of the heavy rare-earth element RH in the R-T-B based alloy powder A; mixing these two R-T-B based alloy powders A and B together; compacting the mixed R-T-B based alloy powder to obtain a compact with a predetermined shape; and sintering the compact.', '生产RTB基烧结磁体的方法包括以下步骤：提供RTB基合金粉末A和B，使得RTB基合金粉末B的粒度D50比RTB基合金小至少1.0μm。粉末A和RTB基合金粉末B中重稀土元素RH的较高含量与基于RTB的重稀土元素RH的较低含量之间存在至少4质量％的差ΔRH。合金粉末A;将这两种R-T-B基合金粉末A和B混合在一起;压制混合的R-T-B基合金粉末，得到具有预定形状的压块;烧结压块。', 'US13/143566', 1263398400, 'US8287661B2', 1350316800, 1319644800, NULL, 1350316800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 20, 2, 0, 0, 0, NULL, NULL, NULL, '2009007305 | 2009078230 | 2009277240', 'JP | JP | JP', 1232035200, 11, 11, NULL, NULL, 12, 11, 8, 9, 3, NULL, '850', NULL, 'SHEEHAN, JOHN', NULL, 'JP1994096928A | JP2006186216A | JP2009010305A | JP2009032742A | US20060231165A1 | US20060272450A1 | US20090019969A1 | US5930582A | US6444048B1 | US6468365B1 | US7192493B2 | US7201810B2', 'US10395823B2 | US11270841B2 | US20140311287A1 | US9044834B2 | US9067284B2 | US9095940B2 | US9144865B2 | US9177705B2 | US9336932B1 | US9492869B2 | US9520216B2', 'English translation of Official Communication issued in corresponding International Application PCT/JP2010/000178, mailed on Aug. 25, 2011. cited by other. | Machine Translation of Japanese Patent Document No. 2009-032742A, Feb. 12, 2009. cited by examiner | Official Communication issued in International Patent Application No. PCT/JP2010/000178, mailed on Apr. 6, 2010. cited by other', 1, '\\20220510\\5749521a7309439ab21a2edb4ec5b2fd.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39456, 39458, 39457, 12);
INSERT INTO `os_patent` VALUES (23100, 'Method for producing r-t-b sintered magnet', 'r-t-b烧结磁铁的制造方法', 'EP2388350B1', 'A method for producing a sintered R-T-B based magnet includes the steps of: providing R-T-B based alloy powders A and B so that the R-T-B based alloy powder B has a particle size D50 that is smaller by at least 1.0 µm than that of the R-T-B based alloy powder A and that there is a difference ΔRH, of at least 4 mass% between the higher content of a heavy rare-earth element RH in the R-T-B based alloy powder B and the lower content of the heavy rare-earth element RH in the R-T-B based alloy powder A; mixing these two R-T-B based alloy powders A and B together; compacting the mixed R-T-B based alloy powder to obtain a compact with a predetermined shape; and sintering the compact.', '生产RTB基烧结磁体的方法包括以下步骤：提供RTB基合金粉末A和B，使得RTB基合金粉末B的粒度D50比RTB基合金小至少1.0μm。粉末A和RTB基合金粉末B中重稀土元素RH的较高含量与RTB中重稀土元素RH的较低含量之间存在至少4质量％的差ΔRH。基合金粉末A;将这两种R-T-B基合金粉末A和B混合在一起;压制混合的R-T-B基合金粉末，得到具有预定形状的压块;烧结压块。', 'EP2010731161', 1263398400, 'EP2388350B1', 1537286400, 1321977600, NULL, 1537286400, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 32, 2, 0, 0, 0, NULL, NULL, NULL, '2009007305 | 2009078230 | 2009277240', 'JP | JP | JP', 1232035200, 11, 11, NULL, NULL, 10, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, 'EP1160804A2 | JP1985096928A | JP2000188213A | JP2002301554A | JP2002356701A | JP2006098204A | JP2006186216A | JP2009010305A | JP2009032742A | WO2006098204A1', NULL, NULL, 1, '\\20220510\\09817df2c1804261a57c672ae896eb3b.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, '有效:DE | 失效:NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,HU,SE,SI,MC,SK,SM,GB,IE,EE,CH,MT,IS,IT,GR,ES,AT,CY,CZ,PL,RO,LI,TR,NL | 未确认:MK', 39456, 39458, 39457, 12);
INSERT INTO `os_patent` VALUES (23101, 'VERFAHREN ZUR HERSTELLUNG EINES GESINTERTEN R-T-B-MAGNETEN', '制造烧结R-T-B磁体的方法', 'DE602010053694T2', 'Disclosed is a method for producing an R-T-B sintered magnet, which comprises: a step of preparing an R-T-B alloy powder (A) and another R-T-B alloy powder (B); a step of mixing the R-T-B alloy powder (A) and the R-T-B alloy powder (B); a step of molding the mixed R-T-B alloy powder into a molded body having a predetermined shape; and a step of sintering the molded body. In this connection, the particle diameter D50 of the R-T-B alloy powder (B) is smaller than the particle diameter D50 of the R-T-B alloy powder (A) by 1.0 μm or more, and the difference (∆RH) in mass% between the amount of heavy rare earth elements (RH) contained in the R-T-B alloy powder (A) and the amount of heavy rare earth elements (RH) contained in the R-T-B alloy powder (B) is specified that the RH content in the R-T-B alloy powder (B) is higher than the RH content in the R-T-B alloy powder (A) by 4 mass% or more.', '本发明公开了一种R-T-B烧结磁体的制备方法，该方法包括：制备R-T-B合金粉末（A）和另一种R-T-B合金粉末（B）的步骤;混合R-T-B合金粉末（A）和R-T-B合金粉末（B）的步骤;将混合的R-T-B合金粉末模塑成具有预定形状的模塑体的步骤;以及烧结模制体的步骤。就此而言，RTB合金粉末（B）的粒径D50比RTB合金粉末（A）的粒径D50小1.0μm以上，并且量（ΔRH）之间的质量％之差（ΔRH） RTB合金粉末（A）中含有的重稀土元素（RH）和RTB合金粉末（B）中含有的重稀土元素（RH）的量，规定为RTB合金粉末中的RH含量（B） ）RTB合金粉末（A）中的RH含量比4质量％以上高。', 'DE602010053694', 1263398400, 'DE602010053694T2', 1537286400, 1537286400, NULL, 1537286400, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 46, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 39459, 39458, 39460, 12);
INSERT INTO `os_patent` VALUES (23102, '蒸着形成される金属被膜の緻密性を向上させる方法', '一种改善通过气相沉积形成的金属涂层的致密性的方法', 'JP5423438B2', '【課題】 希土類系永久磁石などの被処理物の表面に蒸着形成される金属被膜の緻密性を向上させる方法を提供すること。\n\n【解決手段】 蒸着槽内において加熱した溶融蒸発部に蒸着制御ガスを含有するワイヤー状金属蒸着材料を連続供給しながら蒸発させることで、蒸着槽内の少なくとも溶融蒸発部と被処理物の近傍に蒸着制御ガスを供給した状態で被処理物の表面に金属被膜を蒸着形成する際、蒸着槽内全圧に対する希ガス分圧の割合を0.2〜0.8に維持して蒸着処理を行うことを特徴とする。\n\n【選択図】図3', '要解决的问题：提供一种增强要在待处理物体（例如稀土基永磁体）上气相沉积的金属膜的致密性的方法。ŽSOLUTION：含有气相沉积控制气体的线状金属气相沉积材料在连续供应到在气相沉积槽中加热的熔体蒸发部分的同时蒸发，从而金属膜气相沉积在物体的表面上。其中气相沉积控制气体至少供应到熔融蒸发部分和气相沉积槽中物体附近的状态。在这种情况下，在保持惰性气体分压与气相沉积槽中的总压力之比为0.2-0.8的同时进行气相沉积。Ž', 'JP2010018475', 1264694400, 'JP5423438B2', 1392739200, 1313596800, NULL, 1386259200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, '若土 雅之', NULL, 'JP2001032062A | JP2005191276A | JP2006274424A', NULL, NULL, 1, '\\20220510\\620d39fa83214024ad2ac06c8bc26373.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39461, 39463, 39462, 2);
INSERT INTO `os_patent` VALUES (23103, 'R-fe-b type rare earth sintered magnet and process for production of the same', 'R-fe-b型稀土烧结磁体及其制造方法', 'IN295035B', 'In an R-Fe-B based rare-earth sintered magnet according to the present invention, at a depth of 20 µ m under the surface of its magnet body, crystal grains of an R2Fe14B type compound have an (RL1-xRHx)2Fe14B (where 0.2≤x≤0.75) layer with a thickness of 1 nm to 2 µ m in their outer periphery. In this case, the light rare-earth element RL is at least one of Nd and Pr, and the heavy rare-earth element RH is at least one element selected from the group consisting of Dy, Ho and Tb.', '在本发明的R-Fe-B系稀土族烧结磁铁中，在其磁体表面下20μm的深度，R2Fe14B型化合物的晶粒具有（RL1-xRHx）2Fe14B（其中0.2≤x≤0.75）层在其外围厚度为1nm至2μm。在这种情况下，轻稀土元素RL是Nd和Pr中的至少一种，重稀土元素RH是选自Dy，Ho和Tb中的至少一种元素。', 'IN573CHENP2010', 1264694400, 'IN295035B', 1522080000, 1280419200, NULL, 1522080000, '印度', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 127, 3, 0, 0, 0, NULL, NULL, NULL, '2007174063', 'JP', 1183305600, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\ade7eaadd7524b75981997991208bad8.png', NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 39464, 39350, 39465, 19);
INSERT INTO `os_patent` VALUES (23104, 'R-fe-b rare earth sinthered magnet', 'R-fe-b稀土金属磁铁', 'IN1044CHENP2010A', 'An R-Fe-B based rare-earth sintered magnet according to the present invention includes, as a main phase, crystal grains of an R2Fe14B type compound that includes Nd, which is a light rare-earth element, as a major rare-earth element R. The magnet includes a heavy rare-earth element RH (which is at least one of Dy and Tb) that has been introduced through the surface of the sintered magnet by diffusion. The magnet has a region in which the concentration of the heavy rare-earth element RH in a grain boundary R-rich phase is lower than at the surface of the crystal grains of the R2Fe14B type compound but higher than at the core of the crystal grains of the R2Fe14B type compound.', '根据本发明的R-Fe-B基稀土烧结磁体包括作为主相的包含作为轻稀土元素的Nd作为主要稀土的R2Fe14B型化合物的晶粒。磁体包括重稀土元素RH（其为Dy和Tb中的至少一种），其通过扩散通过烧结磁体的表面引入。磁体具有这样的区域，其中晶界富R相中的重稀土元素RH的浓度低于R2Fe14B型化合物的晶粒表面但高于晶粒核的浓度。 R2Fe14B型化合物。', 'IN1044CHENP2010', 1266940800, 'IN1044CHENP2010A', 1342108800, 1342108800, NULL, NULL, '印度', NULL, NULL, NULL, NULL, 3, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 69, 5, 0, 0, 0, NULL, NULL, NULL, '2007196159', 'JP', 1185465600, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\45b0f368bf81454e93849c2fd1e85d34.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39466, 39355, 39467, 19);
INSERT INTO `os_patent` VALUES (23105, 'Magnetic field generator', '磁场发生器', 'US8674797B2', 'There is provided a magnetic field generator in which separation and dislocation of permanent magnets from their permanent magnet groups is prevented easily and reliably for a long period of time without sacrificing productivity. A magnetic field generator 10 includes a permanent magnet group 14a which is provided on a plate yoke 12a; a pole piece 16a which is provided in a first main surface of the permanent magnet group 14a, leaving an exposed region 18b thereon; a frame-like member 34 which is provided on the plate yoke 12a to surround the permanent magnet group 14a; and a flange-shaped member 36 which is provided in the pole piece 16a to cover the exposed region 18b. Presser bolts 44 are threaded into the frame-like member 34 and press an outer circumferential surface 18a of the permanent magnet group 14a directly or via insertion members 42. Presser bolts 48 are threaded into the flange-shaped member 36, and press the exposed region 18b of the permanent magnet group 14a directly or via insertion members 46. A plate yoke 12b has the same configuration.', '提供一种磁场发生器，其中永久磁铁与其永磁体组的分离和错位可以在不牺牲生产率的情况下长时间容易且可靠地防止。磁场发生器10包括设置在板状磁轭12a上的永磁体组14a;极片16a，设置在永磁体组14a的第一主表面上，在其上留下暴露区域18b;框架状构件34设置在板状轭12a上以包围永磁体组14a;凸缘形构件36设置在极靴16a中以覆盖暴露区域18b。压紧螺栓44拧入框架状构件34并直接或通过插入构件42压紧永磁体组14a的外圆周表面18a。压紧螺栓48拧入凸缘形构件36中，并按压暴露区域永磁体组14a的18b直接或通过插入构件46形成。板状轭12b具有相同的结构。', 'US13/144996', 1267113600, 'US8674797B2', 1395072000, 1320854400, NULL, 1395072000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 18, 2, 0, 0, 0, NULL, NULL, NULL, '2009045881', 'JP', 1235664000, 11, 11, NULL, NULL, 33, 2, 0, 2, 2, NULL, '875', NULL, 'MUSLEH, MOHAMAD', NULL, 'JP1985071112A | JP1985239005A | JP1985257109A | JP1986152956A | JP1988107006A | JP1996336273A | JP1998275720A | JP1999186013A | JP2001046351A | JP2001326118A | JP2002190404A | JP2003168604A | JP2003293008A | JP2004305743A | JP2004305746A | JP2004358097A | JP2008279265A | US20020062884A1 | US20040145436A1 | US20040194288A1 | US20040194289A1 | US20040246083A1 | US20080100406A1 | US4217568A | US4672346A | US6198286B1 | US6452472B1 | US6664878B1 | US6781495B2 | US6828891B2 | US6897751B2 | US7463129B1 | US7796002B2', 'US10847294B2 | US20190013132A1', 'Extended European Search Report mailed May 13, 2013 in counterpart application No. 10746348.1 (9 pages). cited by applicant. | International Search Report for International Application No. PCT/JP2010/053166 dated Mar. 15, 2010. cited by applicant', 1, '\\20220510\\4a3e0337953948e88822f361163d0ba1.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39468, 39470, 39469, 12);
INSERT INTO `os_patent` VALUES (23106, '磁界発生装置', '磁场发生器', 'JP5668681B2', '永久磁石の永久磁石群からの離脱および位置ずれを簡単にかつ長期に亘って確実に防止でき、生産性のよい磁界発生装置を提供する。磁界発生装置１０は、板状継鉄１２ａ上に設けられる永久磁石群１４ａ、露出部１８ｂを形成するように永久磁石群１４ａの一方主面に設けられる磁極片１６ａ、永久磁石群１４ａを囲むように板状継鉄１２ａ上に設けられる枠状部材３４、および露出部１８ｂを覆うように磁極片１６ａに設けられる鍔状部材３６を備える。枠状部材３４に螺入された押しボルト４４は、直接または介挿部材４２を介して永久磁石群１４ａの外周面１８ａを押圧する。鍔状部材３６に螺入された押しボルト４８は、直接または介挿部材４６を介して永久磁石群１４ａの露出部１８ｂを押圧する。板状継鉄１２ｂ側についても同様に構成される。', '本发明提供一种高产磁场发生器，其能够简单且长时间地可靠地防止永磁体与永磁体组的分离和移位。磁场产生装置10构造成围绕永磁体组14a和设置在永磁体组14a的一个主表面上的极靴16a，以便形成永磁体组14a和设置在板状轭12a上的暴露部分18b。框架状构件34设置在板状磁轭12a上，钩状构件36设置在极靴16a上，以覆盖露出部分18b。拧入框架状构件34的推动螺栓44直接或经由插入构件42按压永磁体组14a的外周表面18a。拧入钩状构件36中的推动螺栓48直接或经由插入构件46按压永磁体组14a的暴露部分18b。这同样适用于板状轭12b侧。', 'JP2011501683', 1267113600, 'JP5668681B2', 1423670400, 1346860800, NULL, 1419523200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 2, 0, 0, 0, NULL, NULL, NULL, '2009045881', 'JP', 1235664000, 11, 11, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '島田 保', NULL, 'JP2003168604A | JP2004305743A | JP2004305746A | JP2004358097A | JP2006173431A | JP2008279265A', NULL, NULL, 1, '\\20220510\\77d3c08cecfb4bb99c10e9369a4c7206.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39468, 39470, 39469, 12);
INSERT INTO `os_patent` VALUES (23107, 'Magnetic field generator', '磁场发生器', 'EP2401961B1', 'There is provided a magnetic field generator in which separation and dislocation of permanent magnets from their permanent magnet groups is prevented easily and reliably for a long period of time without sacrificing productivity. A magnetic field generator 10 includes a permanent magnet group 14a which is provided on a plate yoke 12a; a pole piece 16a which is provided in a first main surface of the permanent magnet group 14a, leaving an exposed region 18b thereon; a frame-like member 34 which is provided on the plate yoke 12a to surround the permanent magnet group 14a; and a flange-shaped member 36 which is provided in the pole piece 16a to cover the exposed region 18b. Presser bolts 44 are threaded into the frame-like member 34 and press an outer circumferential surface 18a of the permanent magnet group 14a directly or via insertion members 42. Presser bolts 48 are threaded into the flange-shaped member 36, and press the exposed region 18b of the permanent magnet group 14a directly or via insertion members 46. A plate yoke 12b has the same configuration.', '提供一种磁场发生器，其中永久磁铁与其永磁体组的分离和错位可以在不牺牲生产率的情况下长时间容易且可靠地防止。磁场发生器10包括设置在板状轭12a上的永磁体组14a;极片16a，设置在永磁体组14a的第一主表面上，在其上留下暴露区域18b;框架状构件34设置在板状轭12a上以包围永磁体组14a;凸缘形构件36设置在极靴16a中以覆盖暴露区域18b。压紧螺栓44拧入框架状构件34并直接或通过插入构件42压紧永磁体组14a的外圆周表面18a。压紧螺栓48拧入凸缘形构件36中，并按压暴露区域永磁体组14a的18b直接或通过插入构件46形成。板状轭12b具有相同的构造。', 'EP2010746348', 1267113600, 'EP2401961B1', 1605628800, 1325606400, NULL, 1605628800, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 23, 2, 0, 0, 0, NULL, NULL, NULL, '2009045881', 'JP', 1235664000, 11, 11, NULL, NULL, 9, 0, 0, 0, 0, NULL, '885', NULL, NULL, NULL, 'JP2004305746A | JP2004358097A | JP2008279265A | US20040194289A1 | US20040246083A1 | US20080100406A1 | US6198286B1 | US6664878B1 | US7463129B1', NULL, NULL, 1, '\\20220510\\953adec6ccc44184939f98a51aa1e360.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, '有效:DE | 失效:NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,SE,SI,MC,SK,SM,GB,IE,EE,CH,IS,IT,GR,ES,AT,CZ,PL,RO,LI,NL | 未确认:HU,MK,MT,CY,TR', 39468, 39470, 39469, 12);
INSERT INTO `os_patent` VALUES (23108, 'MAGNETFELDGENERATOR', '磁场发生器', 'DE602010065936T2', 'Provided is a magnetic field generator exhibiting high productivity wherein separation or misalignment of a permanent magnet from a permanent magnet group can be prevented easily and surely over a long term. A magnetic field generator (10) is equipped with a permanent magnet group (14a) provided on a plate-like yoke (12a), a pole shoe (16a) provided on one main surface of the permanent magnet group (14a) to form an exposed portion (18b), a frame member (34) provided on the plate-like yoke (12a) to surround the permanent magnet group (14a), and a flange-like member (36) provided onto the pole shoe (16a) to cover the exposed portion (18b). A push bolt (44) screwed into the frame member (34) presses the outer circumferential surface (18a) of the permanent magnet group (14a) directly or with an insertion member (42) interposed therebetween. A push bolt (48) screwed into the flange-like member (36) presses the exposed portion (18b) of the permanent magnet group (14a) directly or with an insertion member (46) interposed therebetween. The plate-like yoke (12b) side is also constituted similarly.', '本发明提供一种具有高生产率的磁场发生器，其中可以容易且可靠地长期防止永磁体与永磁体组的分离或错位。磁场发生器（10）配备有设置在板状轭（12a）上的永磁体组（14a），设置在永磁体组（14a）的一个主表面上的极靴（16a）以形成暴露部分（18b），设置在板状轭（12a）上以围绕永磁体组（14a）的框架构件（34），以及设置在极靴（16a）上的凸缘状构件（36）覆盖暴露部分（18b）。拧入框架构件（34）中的推动螺栓（44）直接或通过插入构件（42）挤压永磁体组（14a）的外周表面（18a）。拧入凸缘状构件（36）的推动螺栓（48）直接或通过插入构件（46）挤压永磁体组（14a）的暴露部分（18b）。板状轭（12b）侧也类似地构成。', 'DE602010065936', 1267113600, 'DE602010065936T2', 1605628800, 1605628800, NULL, 1605628800, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 34, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '885', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39471, 39470, 39472, 12);
INSERT INTO `os_patent` VALUES (23109, '磁場発生装置', '磁场发生器', 'JP5531698B2', '【課題】設定された磁場領域において、磁場を均一にし、特に垂直方向の直線性に優れた磁場を実現する。\n\n【解決手段】設定された磁場領域Fにおいて、磁場を均一にし、垂直方向の直線性に優れた磁場を提供する磁場発生装置であって、磁場領域Fを垂直方向から挟むように配置される第1永久磁石1と、第2永久磁石2と、互いに向かい合う第1永久磁石1の磁極面1aと、第2永久磁石2の磁極面2aに夫々配置される、第1ポールピース10と第2ポールピース20と、を備え、第1永久磁石1と第2永久磁石2の磁化方向は共に垂直方向で、かつ、互いに逆方向になるように設定され、第1永久磁石1と第2永久磁石2のうち、少なくとも一方の側に、設定された磁場領域に対向する貫通孔Aが形成される。\n\n【選択図】図1', '要解决的问题：在预定义的磁场区域中获得在垂直方向上均匀且特别优异的线性的磁场。解决方案：磁场产生装置在预定义的磁场区域F中提供在垂直方向上均匀且线性度优异的磁场。磁场产生装置包括第一永磁体1和第二永磁体2，它们是布置成从垂直方向插入磁场区域F，并且还包括第一极靴10和第二极靴20，它们布置在第一永磁体1的相互面对的磁极面1a和磁极面2a上。第二永磁体2的形状分别为。第一永磁体1的磁化方向和第二永磁体2的磁化方向均设置在垂直方向上但彼此相反，并且面向预定磁场区域的通孔A形成在至少一个中。第一和第二永磁体1和2', 'JP2010064672', 1268928000, 'JP5531698B2', 1403625600, 1288195200, NULL, 1399564800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, '2009068395', 'JP', 1237392000, 2, 2, NULL, NULL, 6, 0, 0, 0, 0, NULL, '864', NULL, '久保田 昌晴', NULL, 'JP1984061763A | JP1988228551A | JP1990007503A | JP1996064142A | JP2002148104A | JP2005322581A', NULL, NULL, 1, '\\20220510\\9424d2be24c04bda82b5d3e18306799a.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39473, 39475, 39474, 2);
INSERT INTO `os_patent` VALUES (23110, 'R-T-B系焼結磁石の製造方法およびRH拡散処理用治具', '制造烧结R-T-B磁体的方法和用于RH扩散处理的夹具', 'JP5471698B2', '【課題】焼結磁石体全面にほぼ均一なRH拡散処理を安定して行なう。\n\n【解決手段】本発明のR-T-B系焼結磁石の製造方法は、重希土類元素RHを含む材料から形成されたRH拡散源とR-T—B系焼結磁石体とを準備する工程(A)と、前記焼結磁石体を水平面に線接触させ、かつ支持部材によって前記焼結磁石体と前記RH拡散源とを水平面に対して斜めに配置する工程(B)と、102Pa以下の雰囲気圧力で600℃以上1000℃以下の熱処理を10分以上48時間以下行うRH拡散工程(C)とを含む。\n\n【選択図】図1', '本发明的一个目的是稳定地,稳定地是大致均匀的RH扩散过程。\n\n根据本发明的制造基于RTB的烧结磁体的方法是制备由含有重稀土元素RH和RT-B基烧结磁体的材料形成的RH扩散源;步骤(b)其中烧结磁体与水平表面接触和烧结磁体和烧结磁体,并且RH扩散源相对于水平平面对角线布置。2在PA或更小的气氛压力下,在PA或更小的气氛压力下,热处理为600℃以上且1000℃或更低的热处理。\n\n图1', 'JP2010071829', 1269532800, 'JP5471698B2', 1397577600, 1318435200, NULL, 1392307200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '井上 健一', NULL, 'JP1993135976A | JP2005276949A | JP2008251762A | JP2009135393A | JP2009200179A | WO2007102391A1', NULL, NULL, 1, '\\20220510\\91b6faf12385426da5a352539883a4af.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 39476, 39478, 39477, 2);
INSERT INTO `os_patent` VALUES (23111, 'Alloy for sintered R-T-B-M magnet and method for producing same', '烧结R-T-B-M磁体用合金及其制造方法', 'US8317937B2', 'In order to make a sintered R-T-B-M magnet so that R2T14B phases that include a lot of Dy in the surface region of the main phase are distributed over the entire magnet, a region including a heavy rare-earth element RH at a high concentration is formed continuously beforehand at an interface between the crystals of an R2T14B compound that is the main phase of the sintered R-T-B-M magnet and the other phases.', '为了制造RTBM烧结磁体，使得在主相的表面区域中包含大量Dy的R2T14B相分布在整个磁体上，连续形成包含高浓度的重稀土元素RH的区域。预先在作为RTBM烧结磁体的主相的R2T14B化合物的晶体与其他相之间的界面处。', 'US13/260755', 1269792000, 'US8317937B2', 1353945600, 1328716800, NULL, 1353945600, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, '2009083839', 'JP', 1238428800, 7, 7, NULL, NULL, 10, 0, 0, 0, 2, NULL, '850', NULL, 'SHEEHAN, JOHN', NULL, 'JP1992155902A | US20080257716A1 | US20080286595A1 | US20090019969A1 | US20090252865A1 | US20090297699A1 | US20090322459A1 | US20100003156A1 | US20110012699A1 | US5383978A', NULL, 'English translation of Official Communication issued in corresponding International Application PCT/JP2010/002276, mailed on Nov. 24, 2011. cited by other. | Official Communication issued in International Patent Application No. PCT/JP2010/002276, mailed on Jun. 29, 2010. cited by other', 1, '\\20220510\\73e5cf4823aa45edaeed75e3e88fce04.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39479, 39481, 39480, 7);
INSERT INTO `os_patent` VALUES (23112, 'R-fe-b anisotropic sintered magnet', 'R-fe-b各向异性烧结磁铁', 'IN283886B', 'An R-Fe-B based anisotropic sintered magnet according to the present invention has, as a main phase, an R2Fe14B type compound that includes a light rare-earth element RL (which is at least one of Nd and Pr) as a major rare-earth element R, and also has a heavy rare-earth element RH (which is at least one element selected from the group consisting of Dy and Tb). In the crystal lattice of the main phase, the c-axis is oriented in a predetermined direction. The magnet includes a portion in which at least two peaks of diffraction are observed within a 2theta, range of 60.5 degrees to 61.5 degrees when an X-ray diffraction measurement is carried out using a CuK-alpha-ray on a plane that is located at a depth of 500 micrometres or less under a pole face of the magnet and that is parallel to the pole face.', '根据本发明的R-Fe-B基各向异性烧结磁体具有作为主相的R2Fe14B型化合物，其包含作为主要稀有物的轻稀土元素RL（Nd和Pr中的至少一种）。 - 地球元素R，并且还具有重稀土元素RH（其是选自Dy和Tb中的至少一种元素）。在主相的晶格中，c轴沿预定方向取向。当在位于处的平面上使用CuK-α射线进行X射线衍射测量时，磁体包括在2θ内，在60.5度至61.5度范围内观察到至少两个衍射峰的部分。在磁铁的磁极面下并且与磁极面平行的深度为500微米或更小。', 'IN1766CHENP2010', 1269792000, 'IN283886B', 1496332800, 1285257600, NULL, 1496332800, '印度', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 106, 4, 0, 0, 0, NULL, NULL, NULL, '2007229113', 'JP', 1188835200, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\b667341610664919bf0a78c270789ca4.png', NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 39482, 39368, 39483, 22);
INSERT INTO `os_patent` VALUES (23113, 'R-T-B-M系焼結磁石用合金及びその製造方法', 'R  -  T  -  B  -  M基烧结磁体合金及其生产方法', 'JP5598465B2', '焼結磁石全体に亘って結晶粒の主相外殻にDyの多いR2T14Bが存在するR-T-B-M系焼結磁石を作製できるように、あらかじめ、R-T-B-M系焼結磁石用合金の主相であるR2T14B化合物の結晶とそれ以外の相との界面部分に重希土類元素RHの濃度が高い領域を連続して生成する。', '整个烧结磁铁中的晶粒晶粒壳 2 T. 14 为了生产其存在B的基于R-T-B-M的烧结磁体,R-T-B-M基烧结磁体合金是主阶段 2 T. 14 在B化合物的界面部分中,重稀土元素RH的浓度高的区域,并连续产生其他相。', 'JP2011507015', 1269792000, 'JP5598465B2', 1412092800, 1349280000, NULL, 1408636800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, '2009083839', 'JP', 1238428800, 7, 7, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, '佐藤 陽一', NULL, 'JP1992155902A | WO2006098204A1 | WO2007102391A1 | WO2009016815A1', NULL, NULL, 1, '\\20220510\\a35fb476a5a449ab974265d26a4f3ac2.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39479, 39481, 39480, 7);
INSERT INTO `os_patent` VALUES (23114, 'Nanocomposite bulk magnet and process for producing same', '纳米复合块状磁铁及其制造方法', 'US8961868B2', 'In a nanocomposite bulk magnet according to the present invention, nanocomposite magnet powder particles, including an Nd2Fe14B crystalline phase and an α-Fe phase, are combined together. The composition of the magnet is represented by T100-x-y-z-n(B1-qCq)xRyTizMn, where T is at least one transition metal element selected from the group consisting of Fe, Co and Ni and always including Fe, R is at least one rare-earth element including substantially no La or Ce, M is an additive metallic element, and x, y, z, n and q satisfy 4 at %≦x≦10 at %, 6 at %≦y≦10 at %, 0.05 at %≦z≦5 at %, 0 at %≦n≦10 at %, and 0≦q≦0.5, respectively. The powder particles have a minor-axis size of less than 40 μm. And powder particles, of which the major-axis size exceeds 53 μm, account for at least 90 mass % of the entire magnet. And those powder particles are directly combined with each other. Consequently, a full-dense magnet, of which the density is 96% or more of the true density of its material alloy, is realized.', '在根据本发明的纳米复合材料块状磁体中，将包括Nd  2  Fe  14  B晶相和α-Fe相的纳米复合磁体粉末颗粒组合在一起。磁铁的成分由T  100-xyzn （B  1-q  C  q ） x  R表示 y  Ti  z  M  n ，其中T是至少一种选自Fe，Co和Ni的过渡金属元素并且总是包括Fe，R是至少一种基本上不含La或Ce的稀土元素，M是添加金属元素，x，y，z，n和q满足4at％≤x≤10at％，6at％≤ y≤10at％，0.05at％≤z≤5at％，0at％≤n≤10at％，0≤q≤0.5。粉末颗粒的短轴尺寸小于40μm。并且，长轴尺寸超过53μm的粉末颗粒占整个磁体的至少90质量％。并且那些粉末颗粒彼此直接结合。因此，实现了全密度磁体，其密度为其材料合金的真密度的96％或更多。', 'US13/260758', 1269878400, 'US8961868B2', 1424707200, 1327507200, NULL, 1424707200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 25, 1, 0, 0, 0, NULL, NULL, NULL, '2009086337', 'JP', 1238428800, 7, 7, NULL, NULL, 12, 0, 0, 0, 2, NULL, '869', NULL, 'WYSZOMIERSKI, GEORGE', 'MAI, NGOCLAN T', 'JP1990260615A | JP2004014906A | JP2008078614A | US20030062097A1 | US20040099346A1 | US20090129966A1 | US5049208A | US5100485A | US5872501A | US6183571B1 | US6790296B2 | US7842140B2', NULL, 'English translation of Official Communication issued in corresponding International Application PCT/JP2010/002321, mailed on Nov. 24, 2011. cited by applicant | Official Communication issued in International Patent Application No. PCT/JP2010/002321, mailed on Jun. 8, 2010. cited by applicant.', 1, '\\20220510\\5da037bf945149b3992690c508e89508.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39484, 39486, 39485, 7);
INSERT INTO `os_patent` VALUES (23115, 'ナノコンポジットバルク磁石およびその製造方法', '纳米复合材料块体磁体及其制造方法', 'JP4591633B2', '本発明のナノコンポジットバルク磁石は、Ｎｄ2Ｆｅ14Ｂ型結晶相およびα−Ｆｅ相を含有するナノコンポジット磁石の粉末粒子が結合したナノコンポジットバルク磁石であって、組成式は、Ｔ100-x-y-z-n（Ｂ1-qＣq）xＲyＴｉzＭnで表現される。Ｔは、Ｆｅ、ＣｏおよびＮｉからなる群から選択された少なくとも１種の元素であって、Ｆｅを必ず含む遷移金属元素、ＲはＬａおよびＣｅを実質的に含まない少なくとも１種の希土類元素である。Ｍは、添加金属元素である。４≦ｘ≦１０原子％、６≦ｙ≦１０原子％、０．０５≦ｚ≦５原子％、０≦ｎ≦１０原子％、０≦ｑ≦０．５を満足する。粉末粒子の短軸方向のサイズが４０μｍ未満であり、かつ、長軸方向のサイズが５３μｍを超える粉末粒子が全体の９０質量％以上を占め、粉末粒子どうしが直接に結合しているため、合金真密度の９６％以上の密度を有するフルデンス磁石が実現される。', '本发明的纳米复合材料块状磁体是纳米复合材料块状磁体，其中含有Nd2Fe14B型晶相和α-Fe相的纳米复合磁体的粉末颗粒被粘合，组成式为T100-xyzn（B1-qCq）它由xRyTizMn表示。 T是选自Fe，Co和Ni中的至少一种元素，并且是必须含有Fe的过渡金属元素，R是至少一种基本上不含La和Ce的稀土元素。有。 M是添加金属元素。 4≤x≤10at％，6≤y≤10at％，0.05≤z≤5at％，0≤n≤10at％，0≤q≤0.5。短轴方向上的粉末颗粒的尺寸小于40μm，并且长轴方向上的尺寸大于53μm的粉末颗粒占整体的90质量％以上，并且粉末颗粒彼此直接结合。实现密度为真密度的96％或更高的全致密磁体。', 'JP2010524299', 1269878400, 'JP4591633B2', 1291132800, 1291132800, NULL, 1285257600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 29, 1, 0, 0, 0, NULL, NULL, NULL, '2009086337', 'JP', 1238428800, 7, 7, NULL, NULL, 11, 0, 0, 0, 0, NULL, NULL, NULL, '長谷川 直也', NULL, 'JP1990198104A | JP1990198105A | JP1990260615A | JP1996162312A | JP1998053844A | JP2002343659A | JP2004014906A | JP2008078614A | WO2006064794A1 | WO2006101117A1', NULL, NULL, 1, '\\20220510\\a78c3305711642a8b0abf3b12e5e4171.png', NULL, NULL, 1, NULL, NULL, 14, NULL, NULL, NULL, 39484, 39486, 39485, 7);
INSERT INTO `os_patent` VALUES (23116, '表面にアルミニウムまたはその合金の蒸着被膜を有する希土類系永久磁石の製造方法', '制造在其表面上具有铝或其合金的气相沉积涂层的稀土基永磁体的方法', 'JP5691226B2', '【課題】 アルミニウムまたはその合金の蒸着被膜が優れた密着性をもって表面に形成されてなる希土類系永久磁石の製造方法を提供すること。\n\n【解決手段】 蒸着槽内において抵抗加熱方式によって加熱された溶融蒸発部にワイヤー状のアルミニウムまたはその合金の蒸着材料を連続供給しながら蒸発させることで、希土類系永久磁石の表面にアルミニウムまたはその合金の蒸着被膜を形成する際、蒸着処理を開始してから終了するまでの間の磁石の温度上昇勾配を10℃/分以下に制御して蒸着処理を行うことを特徴とする。\n\n【選択図】図2', '要解决的问题：提供一种制造稀土基永磁体的方法，其中在其表面上形成具有优异粘附性的铝或其合金的气相沉积膜。解决方案：当在连续供应铝或其合金的布线气相沉积材料到加热的熔体蒸发部件的同时通过蒸发形成在稀土基永磁体的表面上形成铝或其合金的气相沉积膜时通过气相沉积容器中的电阻加热系统，通过将气体的温度上升斜率从气相沉积过程的开始到结束控制到不大于10℃/ min来进行气相沉积过程。', 'JP2010083611', 1269964800, 'JP5691226B2', 1427817600, 1319644800, NULL, 1423756800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 8, 0, 0, 0, 0, NULL, NULL, NULL, '久保田 昌晴', NULL, 'JP1979033878A | JP1986000575A | JP2002088468A | JP2005135594A | JP2005194539A | JP2007046106A | JP2008285715A | JP2009054716A', NULL, NULL, 1, '\\20220510\\bdee4f7ba354434093819e91a7e10a3d.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39487, 39489, 39488, 2);
INSERT INTO `os_patent` VALUES (23117, '表面改質された希土類系焼結磁石の製造方法', '表面改性稀土类烧结磁铁的制造方法', 'JP5609209B2', '(修正有)\n\n【課題】酸化熱処理によって温度や湿度が変動する環境においても十分な耐食性が付与され、磁気特性の低下が抑制され、ハイブリッド自動車や電気自動車の駆動モータや空調機のコンプレッサーに組み込まれるIPMモータで使用しても、高温や高圧の環境下で発生する水素を吸蔵し脆化することによる磁気特性の低下が効果的に防止される、表面改質された希土類系焼結磁石の製造方法を提供する。\n\n【解決手段】希土類系焼結磁石に対し、酸素分圧が1×102Pa〜1×105Paで水蒸気分圧が200Pa〜1000Paの雰囲気下、250℃〜600℃で熱処理工程を含み、常温から熱処理開始温度までの昇温を、酸素分圧が1×102Pa〜1×105Paで水蒸気分圧が1×10-3Pa〜100Paの雰囲気下で2段階工程で行い、常温から200℃迄の昇温を20分間未満で行った後、200℃から熱処理開始温度迄の昇温を20分間以上で行う。\n\n【選択図】図3', '(纠正)\n\n本发明的目的是提供足够的耐腐蚀性,即使在温度和湿度由于氧化热处理而波动的环境中,抑制磁性特性的降低,并且用于掺入驱动电机或空气中的IPM电机中用于混合动力汽车或电动车辆的护发素​​。即便如此,可以提供一种制造表面改性稀土烧结磁体的方法,其中通过有效地存储和脆化氢气在高温和高压环境中的脆化氢气降低。\n\n稀土基烧结磁体,氧分压为1×10 2 Pa至1×10 5Pa,水蒸气分压是200Pa至1000Pa,热处理步骤含有250℃至600℃和热处理开始从常温开始。在1×10 2 Pa至1×10 5Pa的氧分压的大气下,在两步工艺中进行温度升高。大气温度至200°C的温度为20.在低于分钟后,将热处理开始温度从200℃的温度升高到热处理开始温度在20分钟内进行。\n\n图3.', 'JP2010081642', 1269964800, 'JP5609209B2', 1413907200, 1305129600, NULL, 1410451200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 18, 2, 0, 0, 0, NULL, NULL, NULL, '2009224628', 'JP', 1254153600, 2, 2, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '久保田 昌晴', NULL, 'JP2002057052A | JP2006156853A | JP2006210864A | JP2007103523A | JP2007207936A | WO2009041639A1', NULL, NULL, 1, '\\20220510\\fc063f2b15da4cc0a1bad1a4d250d2b6.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39490, 39492, 39491, 2);
INSERT INTO `os_patent` VALUES (23118, '希土類系磁石用原料合金の製造装置及び製造方法', '稀土磁体用原料合金的装置和制造方法', 'JP5560848B2', '【課題】希土類系磁石用原料合金に水素を吸蔵させる水素吸蔵工程において、磁気特性を低下させることなく水素吸蔵工程を短縮して製造コストを低減することができる希土類系磁石用原料合金の製造装置及び製造方法を提供すること。\n\n【解決手段】処理容器50に収容された希土類系磁石用原料合金に水素を吸蔵させる水素吸蔵室10と、水素吸蔵室10に処理容器50を搬入する搬送手段5とを有する希土類系磁石用原料合金の製造装置であって、搬送手段5又は搬送手段5の上流側に処理容器50を加熱する加熱手段24を設けたことを特徴とする。\n\n【選択図】図1', '要解决的问题:制备用于稀土基磁体的原料合金,其通过缩短制造成本,可以通过缩短制造成本而不减少储氢过程中的储氢过程中的磁性特性,以将稀土化物质合金储存氢气储存方法磁铁并提供制造方法。\n\n用于稀土基磁体的原料,其具有储氢室10,用于将氢气存储到用于容纳在处理容器50中的稀土基磁体的原料合金和用于执行处理容器50的传送装置5储氢室10.一种用于合金的制造装置的特征在于,用于加热处理容器50的加热装置24设置在传送装置5的上游或传送装置5。\n\n图1', 'JP2010081915', 1269964800, 'JP5560848B2', 1406649600, 1319644800, NULL, 1403193600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 7, 2, 0, 0, 0, NULL, NULL, NULL, '田中 永一', NULL, 'JP1992147908A | JP1993214437A | JP1994346112A | JP2002275598A | JP2005082891A | JP2005118625A | WO2011013489A1', 'JP2012158792A | JP5699637B2', NULL, 1, '\\20220510\\5d48636298ba4c6fb632269932fae166.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 39493, 39495, 39494, 3);
INSERT INTO `os_patent` VALUES (23119, 'Method for producing surface-modified rare earth metal-based sintered magnet and surface-modified rare metal based sintered magnet', '表面改性稀土金属基烧结磁体和表面改性稀有金属基烧结磁体的制备方法', 'IN2348CHENP2010A', 'An objective of the present invention is to provide a rare earth metal-based sintered magnet having imparted thereto sufficient corrosion resistance by an oxidative heat treatment, which is resistant even in an environment of fluctuating humidity, while suppressing the deterioration of the magnetic characteristics ascribed to the oxidative heat treatment, and to provide a method for producing the same. As a means of achieving the objective above, the surface-modified rare earth metal-based sintered magnet of the present invention is characterized in that the surface-modified part comprises a surface-modified layer comprising at least three layers formed in this order from the inner side of the magnet, a main layer containing R, Fe, B, and oxygen, an amorphous layer containing at least R, Fe, and oxygen, and an outermost layer containing iron oxide comprising mainly hematite as the constituent, and the method for producing the same is characterized in that it comprises a step of applying a heat treatment to a bulk magnet body in the temperature range of from 200°C to 600 °C, under an atmosphere with oxygen partial pressure in a range of from1x102 Pa to 1x105 Pa and water vapor partial pressure in a range of from 0.1 Pa to 1000 Pa (exclusive of 1000 Pa).', '本发明的一个目的是提供一种稀土金属基烧结磁体，其通过氧化热处理赋予其足够的耐腐蚀性，即使在湿度波动的环境中也是耐受的，同时抑制由于磁性变化导致的磁特性的劣化。氧化热处理，并提供一种制备它的方法。作为实现上述目的的手段，本发明的表面改性的稀土金属基烧结磁体的特征在于，表面改性部分包括表面改性层，该表面改性层包括至少三层，从该层开始依次形成。磁铁的内侧，含有R，Fe，B和氧的主层，含有至少R，Fe和氧的非晶层，以及含有主要包含赤铁矿作为组分的氧化铁的最外层，以及制造它的方法的特征在于它包括在氧气分压为1×102Pa至1×105的气氛下，在200℃至600℃的温度范围内对块体磁体进行热处理的步骤。 Pa和水蒸气分压在0.1Pa至1000Pa（不包括1000Pa）的范围内。', 'IN2348CHENP2010', 1271865600, 'IN2348CHENP2010A', 1287072000, 1287072000, NULL, NULL, '印度', NULL, NULL, NULL, NULL, 3, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 44, 3, 0, 0, 0, NULL, NULL, NULL, '2007252624', 'JP', 1190822400, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 15, NULL, NULL, NULL, 39496, 39373, 39497, 16);
INSERT INTO `os_patent` VALUES (23120, 'R-T-B系焼結磁石の製造方法', 'R-T-B基烧结磁体的制备方法', 'JP5644170B2', '【課題】焼結磁石体の表層領域において重希土類元素RHが主相粒内部に拡散することを抑制し、Brを実質的に低下させずにHcJを向上させたR-T-B系焼結磁石を提供する。\n\n【解決手段】本発明のR-T-B系焼結磁石の製造方法は、R-T-B系焼結磁石体2、及び重希土類元素RHを含有するRH拡散源4の両方を加熱することにより、RH拡散源4から焼結磁石体2に対する重希土類元素RHの供給を行い、同時に重希土類元素RHを焼結磁石体2の内部に拡散させるRH供給工程(A)と、焼結磁石体2の加熱状態を維持したまま、RH拡散源4から焼結磁石体2への重希土類元素RHの供給を中断し維持するRH拡散工程(B)とを含み、工程(A)及び工程(B)を2回以上繰り返す。\n\n【選択図】図1', '要解决的问题：通过防止重稀土元素RH在内部扩散，提供一种RTB基烧结磁体，其中H  cJ 得到改善而没有实际的B  r 劣化主体相颗粒在烧结磁体的表面层区域中的形成。 ŽSOLUTION：这种制造RTB基烧结磁体的方法包括RH供应工艺（A），以通过加热RTB基烧结磁体2两者，从RH扩散源4将重稀土元素RH供应到烧结磁体2。和含有重稀土元素RH的RH扩散源4同时在烧结磁体2内部扩散重稀土元素RH，以及RH扩散过程（B）以中断和维持重稀土的供应元件RH从RH扩散源4到烧结磁体2，同时保持烧结磁体2的加热状态。工艺（A）和工艺（B）重复两次或更多次。 Ž', 'JP2010099736', 1271952000, 'JP5644170B2', 1419350400, 1321459200, NULL, 1415894400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 21, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '田中 純一', NULL, 'JP1987192566A | JP2004296973A | JP2004304038A | JP2005285859A | JP2006112403A | JP2008300853A | WO2007102391A1', NULL, NULL, 1, '\\20220510\\e5f2854de8af4597a6cc509f95e389d8.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39498, 39500, 39499, 2);
INSERT INTO `os_patent` VALUES (23121, '粒界拡散処理用塗布装置', '用于晶界扩散处理的涂覆设备', 'JP5406112B2', '【課題】NdFeB系焼結磁石の製造において粒界拡散処理を行う際に、RH粉末を焼結体の所定の面に、所定の厚さ、所定のパターンで、過不足なく均一に塗布することができ、自動化や多数の焼結体に対する塗布処理が容易な粒界拡散処理用塗布装置を提供する。\n\n【解決手段】本発明に係る粒界拡散処理用塗布装置は、ワークローダ10と、ワークローダ10よりも上側に設けられた印刷ヘッド20から成る。ワークローダ10は、横方向に移動可能なベース11と、ベース11に対して上下方向に移動可能なリフト12と、リフト12上に着脱可能に載置される桟13と、桟13上に着脱可能に載置されるトレイ14と、トレイ14の上面に設けられたサポータ15と、上下動可能な磁石クランプ16と、を有する。印刷ヘッド20は、透過部211が設けられたスクリーン21と、スクリーン21の上面に接しながら移動可能なスキージ22及び戻しスクレーパ23と、を有する。\n\n【選択図】図1', '甲生产钕铁硼烧结磁体的执行晶界扩散处理时，R ħ粉末的烧结体的规定的面上，以预定的厚度，规定的图案，本发明提供一种晶界扩散处理用涂布装置，其能够均匀地涂布而不会过剩或不足，并且可以自动化且易于应用于大量烧结体。\n\n解决方案：根据本发明的用于晶界扩散处理的涂覆装置包括工件装载器10和设置在工件装载器10上方的打印头20。工作装载机10包括可沿横向移动的底座11，可相对于底座11在垂直方向上移动的升降机12，可拆卸地安装在升降机12上的横档13，能够安装在其上的托盘14，设置在托盘14的上表面上的支撑件15，以及能够上下移动的磁体夹16。打印头20具有设置有透射部分211的屏幕21，以及可在与屏幕21的上表面接触的同时移动的刮板22和返回刮板23。\n\n点域1', 'JP2010101787', 1272297600, 'JP5406112B2', 1391529600, 1321459200, NULL, 1383840000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 10, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 13, 13, NULL, NULL, 6, 0, 0, 0, 0, NULL, '863', NULL, '高橋 克', NULL, 'JP1988252405A | JP2008061333A | JP2009170541A | JP2010098115A | WO2006043348A1 | WO2006064848A1', NULL, NULL, 1, '\\20220510\\8a1779f7c21f4305a72da37b5dadab2f.png', NULL, NULL, 1, NULL, NULL, 14, NULL, NULL, NULL, 39501, 39503, 39502, 14);
INSERT INTO `os_patent` VALUES (23122, '耐食性磁石およびその製造方法', '耐腐蚀磁铁及其制造方法', 'JP5516092B2', '【課題】 リン酸塩被膜などの従来の化成被膜よりも耐食性に優れた化成被膜を表面に有するR-Fe-B系焼結磁石およびその製造方法を提供すること。\n\n【解決手段】 R-Fe-B系焼結磁石(Rは少なくともNdを含む希土類元素)の表面に、構成元素としてZr、Nd、フッ素、酸素を少なくとも含有する化成被膜(但しリンは含有しない)を直接的に有することを特徴とする。\n\n【選択図】図1', '要解决的问题：提供一种R-Fe-B烧结磁体，其具有比常规转化涂层（例如磷酸盐涂层）更高的耐腐蚀性的转化涂层，并提供制造该磁体的方法。溶剂：转化将至少含有Zr，Nd，氟和氧作为构成元素的涂层（不含磷）直接涂覆在R-Fe-B烧结磁体的表面上（R表示稀土元素，至少包括Nd）。', 'JP2010128628', 1275580800, 'JP5516092B2', 1402416000, 1290009600, NULL, 1397145600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 3, 0, 0, 0, NULL, NULL, NULL, '2008176029 | 2008176033', 'JP | JP', 1215100800, 16, 16, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '井上 健一', NULL, 'JP1992022008A | JP1992042517A | JP2002198241A | JP2008060183A | JP2008266767A | JP2008270699A', NULL, NULL, 1, '\\20220510\\c7c936bb9c7a49d48ea4798572eaabd7.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39433, 39435, 39434, 17);
INSERT INTO `os_patent` VALUES (23123, '希土類系磁石用原料合金の水素粉砕粉の回収方法及び回収装置', '用于回收原土磁体原料合金粉末状粉末的方法和装置', 'JP4840544B2', '水素粉砕した後の水素粉砕粉が回収室内に残留することを少なくし、得られる希土類系磁石の酸素量を低減することにより、磁気特性の向上を図ることができる希土類系磁石用原料合金の水素粉砕粉の回収方法及び回収装置であって、不活性ガス導入手段12によって回収室40内に不活性ガスを導入した後に、処理容器50を処理室から回収室40内へ搬入口より搬入し、真空排気手段33によって回収室40内を減圧した後に、処理容器50内の希土類系磁石用原料合金を回収室40内に排出し、その後に、不活性ガス導入手段12によって回収室40内に不活性ガスを導入し、回収室40内を不活性ガスにて所定圧力とした後に、排出口40aから希土類系磁石用原料合金を回収容器50に回収することを特徴とする。', '氢研磨粉末后氢研磨粉末保留在回收室中,并通过减小所得稀土磁体的氧气量,原料合金的氢气用于稀土基磁体,可以改善回收方法后磁性特性在通过惰性气体引入装置12将惰性气体引入回收室40中的研磨粉末和回收装置中,处理容器50从处理室从输送端口40承载到回收室40之后回收室40通过抽空装置33减压回收室40的内部,处理容器50中的稀土基磁体的原料合金被排出到回收室40中,然后惰性气体引入装置图12中不在回收室40中引入有源气体,并且在回收室40的内部用作惰性气体中的预定压力之后,从排放口回收稀土基磁体的原料合金40A到回收容器50。', 'JP2011524720', 1278432000, 'JP4840544B2', 1324396800, 1324396800, NULL, 1318521600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 21, 3, 0, 0, 0, NULL, NULL, NULL, '2009179576', 'JP', 1248969600, 14, 14, NULL, NULL, 6, 2, 0, 0, 0, NULL, NULL, NULL, '浅井 雅弘', NULL, 'JP1995074042A | JP2005082891A | JP2005118625A | JP2006286859A', 'JP2012158792A | JP5699637B2', NULL, 1, '\\20220510\\9fe0094e3a294f8698e7acd05936b305.png', NULL, NULL, 1, NULL, NULL, 17, NULL, NULL, NULL, 39504, 39506, 39505, 15);
INSERT INTO `os_patent` VALUES (23124, '발명의 명칭 희토류계 자석용 원료 합금의 수소 분쇄가루의 회수방법 및 회수장치', '发明名称稀土磁铁原料合金氢粉的回收方法及回收装置', 'KR101166662B1', 'It makes less that the hydrogen decrepitation powder after shattering to pieces with hydrogen remains behind within the return chamber. The amount of oxygen of the obtained rare earth magnet is reduced. Accordingly it is the recovering method of the hydrogen decrepitation powder of the material alloy for the rare earth magnet planning the improvement of the magnetic property and recovery system. After the inactive gas is introduced with the inactive gas introduction means (12) within the return chamber (40) the treatment basin (50) is taken in from the process chamber within the return chamber (40) from the import outlet. After the return chamber (40) inside is reduced pressure with the vacuum exhaustion means (33) the material alloy for the rare earth magnet within the treatment basin (50) is ejected within the return chamber (40). The inactive gas is introduced with the inactive gas introduction means (12) within the return chamber (40). After the return chamber (40) inside is to the inactive gas to the prescribed input the material alloy for the rare earth magnet is collected from the vent (40a) in the recovery vessel (50).', '在使用氢破碎成碎片之后氢气爆裂粉末留在返回室内的情况下，其产生的影响就更小了。所得稀土磁体的氧量减少。因此，计划改善磁性能和回收系统的稀土磁体材料合金的氢爆裂粉末的回收方法。在惰性气体与回流室（40）内的惰性气体引入装置（12）一起引入之后，处理池（50）从进口出口从返回室（40）内的处理室吸入。在返回室（40）内部通过真空排气装置（33）减压之后，处理池（50）内的稀土磁体的材料合金被排出到返回室（40）内。惰性气体与返回室（40）内的惰性气体引入装置（12）一起引入。在返回室（40）内部的惰性气体到达规定的输入之后，从回收容器（50）中的排气口（40a）收集稀土磁体的材料合金。', 'KR1020127003511', 1278432000, 'KR101166662B1', 1342540800, 1335456000, NULL, 1341936000, '韩国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 22, 3, 0, 0, 0, NULL, NULL, NULL, '2009179576', 'JP', 1248969600, 14, 14, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\683b57ac68cd4b12909c6c26a5f65a6f.png', NULL, NULL, 1, NULL, NULL, 17, NULL, NULL, NULL, 39504, 39506, 39505, 15);
INSERT INTO `os_patent` VALUES (23125, 'Method and device for recovering hydrogen pulverized powder of raw-material alloy for rare-earth magnet', '一种稀土磁体原料合金氢粉回收方法及装置', 'US8979973B2', 'A method and a device for recovering hydrogen pulverized powder of a raw-material alloy for rare-earth magnets capable of lowering a possibility that hydrogen pulverized powder after hydrogen was pulverized remains in a recovery chamber and capable of enhancing magnetic properties by reducing an amount of oxygen of an obtained rare-earth magnet, a processing container 50 is carried into a recovery chamber 40 from a processing chamber through a carry-in port after inert gas was introduced into the recovery chamber 40 by inert gas introducing means 12, the raw-material alloy for rare-earth magnets in the processing container 50 is discharged into the recovery chamber 40 after the pressure in the recovery chamber 40 was reduced by evacuating means 33 and thereafter, inert gas is introduced into the recovery chamber 40 by inert gas introducing means 12, and the raw-material alloy for rare-earth magnets is recovered into the recovery container 50 from an discharge port 40a after a pressure in the recovery chamber 40 was set to a predetermined pressure by inert gas.', '用于回收稀土磁体用原料合金的氢粉末粉末的方法和装置能够降低氢气被粉碎后的粉碎粉末的可能性，该方法和装置保留在回收室中，并且能够通过减少催化剂的量来提高磁性能。在将惰性气体导入后，将得到的稀土类磁铁的氧气，处理容器 50 从处理室通过运入口送入回收室 40 通过惰性气体导入装置 12 将回收室 40 ，将处理容器 50 中的稀土类磁铁用原料合金排出通过抽空装置 33然后将回收室 40 中的压力降低后，将回收室 40 ，然后将惰性气体引入回收室 40 通过惰性气体导入装置 12 ，并且稀土磁体用原料合金被回收到在回收室 40 中的压力设定为a后，从排出口 40 回收容器 50 惰性气体的预定压力。', 'US13/387825', 1278432000, 'US8979973B2', 1426521600, 1337788800, NULL, 1426521600, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 21, 3, 0, 0, 0, NULL, NULL, NULL, '2009179576', 'JP', 1248969600, 14, 14, NULL, NULL, 10, 2, 0, 0, 3, NULL, '875', NULL, 'WYSZOMIERSKI, GEORGE', NULL, 'CN1062232A | CN1288239A | CN1550261A | JP2005082891A | JP2005118625A | JP2006286859A | US20060292395A1 | US20130309122A1 | US5417773A | US6709533B2', 'US10056188B2 | US20130309122A1', 'Chinese Office Action dated May 6, 2013, in counterpart Chinese Application No. 201080034211.7. cited by applicant | International Search Report for International Application No. PCT/JP2010/061522 dated Aug. 24, 2010. cited by applicant. | Wang, et al., \"Research on Recovery and Production of Rare Earth from Iron Alloy Scraps\", Rare Metals and Cemented Carbides, vol. 37, No. 2, Jun. 2009, pp. 44-46. cited by applicant', 1, '\\20220510\\9b4167a7e71242ceacfdcc012497ccb1.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39504, 39506, 39505, 15);
INSERT INTO `os_patent` VALUES (23126, 'Method of recovering a raw-material alloy powder for rare-earth magnet pulverized with hydrogen', '一种回收氢粉碎的稀土磁铁原料合金粉末的方法', 'EP2460609B1', 'A method and a device for recovering hydrogen pulverized powder of a raw-material alloy for rare-earth magnets capable of lowering a possibility that hydrogen pulverized powder after hydrogen was pulverized remains in a recovery chamber and capable of enhancing magnetic properties by reducing an amount of oxygen of an obtained rare-earth magnet, a processing container 50 is carried into a recovery chamber 40 from a processing chamber through a carry-in port after inert gas was introduced into the recovery chamber 40 by inert gas introducing means 12, the raw-material alloy for rare-earth magnets in the processing container 50 is discharged into the recovery chamber 40 after the pressure in the recovery chamber 40 was reduced by evacuating means 33 and thereafter, inert gas is introduced into the recovery chamber 40 by inert gas introducing means 12, and the raw-material alloy for rare-earth magnets is recovered into the recovery container 50 from an discharge port 40a after a pressure in the recovery chamber 40 was set to a predetermined pressure by inert gas.', '用于回收稀土磁体用原料合金的氢粉末粉末的方法和装置能够降低氢气被粉碎后氢粉碎粉末的可能性，该方法和装置保留在回收室中并且能够通过减少催化剂的量来增强磁性能。在惰性气体通过惰性气体引入装置12引入回收室40之后，处理容器50从所处理的稀土磁体的氧气通过运入口从处理室运送到回收室40中。在通过抽空装置33减小回收室40中的压力之后，将处理容器50中的稀土磁体用合金材料排出到回收室40中，然后通过惰性气体引入装置将惰性气体引入回收室40中。如图12所示，稀土磁铁用原料合金在加压后从排出口40a回收到回收容器50内通过惰性气体将回收室40中的温度设定为预定压力。', 'EP2010804236', 1278432000, 'EP2460609B1', 1560268800, 1338912000, NULL, 1560268800, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 24, 3, 0, 0, 0, NULL, NULL, NULL, '2009179576', 'JP', 1248969600, 14, 14, NULL, NULL, 10, 0, 0, 0, 0, NULL, '874', NULL, NULL, NULL, 'EP1154444A1 | JP2001009595A | JP2005082891A | JP2005118625A | JP2006286859A | US20060292395A1 | US6403024B1', NULL, NULL, 1, '\\20220510\\3c0ddf9aecb64ee697a5f495ad7b1250.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, '有效:DE | 失效:NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,HU,SE,SI,MC,SK,SM,GB,IE,EE,CH,MT,IS,IT,GR,AL,ES,AT,CY,CZ,PL,RO,LI,TR,NL | 未确认:MK', 39504, 39506, 39505, 15);
INSERT INTO `os_patent` VALUES (23127, 'VERFAHREN ZUR RÜCKGEWINNUNG EINES ROHSTOFFLEGIERUNGSPULVERS FÜR EINEN MIT WASSERSTOFF PULVERISIERTEN SELTENERDMAGNETEN', '用于回收氢粉状稀土磁铁的原料合金粉末的方法', 'DE602010059425T2', 'A method and a device for recovering hydrogen pulverization dust of a raw-material alloy for rare-earth magnets are disclosed, with which it is possible to inhibit the dust resulting from hydrogen pulverization from remaining in a recovery chamber and to yield a rare-earth magnet having a reduced oxygen content and hence improved magnetic properties. The method is characterized by introducing an inert gas into a recovery chamber (40) by an inert-gas introduction means (12), subsequently conveying a treatment vessel (50) from a treatment chamber into the recovery chamber (40) through an entrance, evacuating the recovery chamber (40) with an evacuator (33), thereafter discharging a raw-material alloy for rare-earth magnets from the treatment vessel (50) into the recovery chamber (40), subsequently introducing an inert gas into the recovery chamber (40) by the inert-gas introduction means (12) to regulate the pressure within the recovery chamber (40) to a given value with the inert gas, and then recovering the raw-material alloy for rare-earth magnets through a discharge port (40a) and introducing the alloy into a recovery vessel (1).', '本发明公开了一种用于回收稀土磁体用原料合金的氢粉尘的方法和装置，利用该方法和装置可以抑制由氢粉碎产生的粉尘残留在回收室中并产生稀土。磁体具有降低的氧含量并因此改善磁性。该方法的特征在于通过惰性气体引入装置（12）将惰性气体引入回收室（40），随后通过入口将处理容器（50）从处理室输送到回收室（40）中，用抽空器（33）抽空回收室（40），然后将稀土磁体用原料合金从处理容器（50）排出到回收室（40）中，随后将惰性气体引入回收室（40）通过惰性气体导入装置（12）将惰性气体调节回收室（40）内的压力至给定值，然后通过排出口回收稀土磁体用原料合金（40a）并将合金引入回收容器（1）中。', 'DE602010059425', 1278432000, 'DE602010059425T2', 1560268800, 1560268800, NULL, 1560268800, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 43, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '855', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 14, NULL, NULL, NULL, 39507, 39506, 39508, 15);
INSERT INTO `os_patent` VALUES (23128, 'Process for production of R-Fe-B-based rare earth sintered magnet, and steam control member', 'R-Fe-B基稀土烧结磁体的制造方法及蒸汽控制件', 'US8845821B2', 'A sintered R—Fe—B based rare-earth magnet body 1 including, as a main phase, crystal grains of an R2Fe14B type compound that includes a light rare-earth element RL, which is Nd and/or Pr, as a major rare-earth element R is provided. A bulk body 2 including a heavy rare-earth element RH, which is at least one of Dy, Ho and Tb is also provided. The sintered magnet body 1 and the bulk body 2 are arranged in a processing chamber 4 with a vapor control member 3 interposed between the sintered magnet body 1 and the bulk body 2. And the inside of the processing chamber 4 is heated to a temperature of 700° C. to 1000° C., thereby diffusing the heavy rare-earth element RH inside the sintered magnet body 1 while supplying the heavy rare-earth element RH from the bulk body 2 to the surface of the sintered magnet body 1 via the vapor control member 3.', '一种烧结的R-Fe-B基稀土磁体1，包括作为主相的R2Fe14B型化合物的晶粒，其包含作为主要稀有物的Nd和/或Pr的轻稀土元素RL。提供了地球元素R.还提供了包括重稀土元素RH的块体2，所述重稀土元素RH是Dy，Ho和Tb中的至少一种。烧结磁体1和块体2布置在处理室4中，蒸汽控制构件3介于烧结磁体1和块体2之间。处理室4的内部被加热到温度为0℃的处理室4。 700℃至1000℃，从而将重稀土元素RH扩散到烧结磁体1内部，同时经由所述重体稀土元素RH从块体2供应到烧结磁体1的表面。蒸汽控制构件3。', 'US13/382755', 1278518400, 'US8845821B2', 1412006400, 1336579200, NULL, 1412006400, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 21, 2, 0, 0, 0, NULL, NULL, NULL, '2009163302', 'JP', 1247155200, 7, 7, NULL, NULL, 19, 0, 0, 0, 1, NULL, '869', NULL, 'YANG, JEI', NULL, 'JP1979090216A | JP1987192566A | JP2004296973A | JP2004304038A | JP2005285859A | JP2009088191A | US20080286595A1 | US20090138070A1 | US20100037826A1 | US20100239878A1 | US20110273252A1 | US5104695A | US5383978A | US7402226B2 | US8206516B2 | US8268078B2 | WO2007102391A1 | WO2009057592A1 | WO2009107397A1', NULL, 'English translation of Official Communication issued in corresponding International Patent Application No. PCT/JP2010/061629, mailed on Feb. 16, 2012. cited by applicant.', 1, '\\20220510\\e7dc139a28d9447fa818ce937d9444eb.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39509, 39511, 39510, 7);
INSERT INTO `os_patent` VALUES (23129, 'R-Fe-B系希土類焼結磁石の製造方法および蒸気制御部材', '生产R-Fe-B稀土烧结磁体和蒸汽控制元件的方法', 'JP5510456B2', '軽希土類元素ＲＬ（ＮｄおよびＰｒの少なくとも１種）を主たる希土類元素Ｒとして含有するＲ2Ｆｅ14Ｂ型化合物結晶粒を主相として有するＲ−Ｆｅ−Ｂ系希土類焼結磁石体１を用意する。重希土類元素ＲＨ（Ｄｙ、Ｈｏ、およびＴｂからなる群から選択された少なくとも１種）を含有するバルク体２を用意する。焼結磁石体１とバルク体２との間に蒸気制御部材３を介在させた状態で、焼結磁石体１およびバルク体２の両方を処理室４内に配置する。処理室４の内部を７００℃以上１０００℃以下に加熱することにより、バルク体２から蒸気制御部材３を介して重希土類元素ＲＨを焼結磁石体１の表面に供給しつつ、重希土類元素ＲＨを焼結磁石体１の内部に拡散させる。', '制备含有作为主要稀土元素R的轻稀土元素RL（Nd和Pr中的至少一种）的R2Fe14B型化合物晶粒作为主相的R-Fe-B基稀土烧结磁体1。制备含有重稀土元素RH（选自Dy，Ho和Tb中的至少一种）的块体2。在蒸汽控制构件3介于烧结磁体1和块体2之间的情况下，烧结磁体1和块体2都设置在处理室4中。通过将处理室4的内部加热至700℃以上且1000℃以下，重稀土元素RH从块体2通过蒸气控制构件3供应到烧结磁体1的表面。扩散到烧结磁体1的内部。', 'JP2011521960', 1278518400, 'JP5510456B2', 1401811200, 1355932800, NULL, 1396540800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 20, 2, 0, 0, 0, NULL, NULL, NULL, '2009163302', 'JP', 1247155200, 7, 7, NULL, NULL, 6, 2, 0, 0, 0, NULL, NULL, NULL, '五貫 昭一', NULL, 'JP1987192566A | JP2004296973A | JP2004304038A | JP2005285859A | WO2007102391A1 | WO2008032666A1', 'JP2013004557A | JP5818137B2', NULL, 1, '\\20220510\\f46a0eccbbed44b8b03b587132cef0a8.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39509, 39511, 39510, 7);
INSERT INTO `os_patent` VALUES (23130, 'NdFeB焼結磁石及びその製造方法', 'NdFeB烧结磁体及其制造方法', 'JP5687621B2', '本発明は、厚さが5mm以上であっても、高い保磁力HcJを有し、且つ、最大エネルギー積(BH)max及び角型比SQの値が高いNdFeB焼結磁石を提供することを目的とする。本発明に係るNdFeB焼結磁石は、NdFeB焼結磁石の基材の粒界にDy又は/及びTbを粒界拡散法により拡散させたものであって、前記基材における金属状態の希土類の量が原子比で12.7%〜16.0%であり、前記基材の粒界において、希土類リッチ相が、該基材の表面と該表面から2.5mmの深さまでの間で繋がっており、前記粒界拡散法により拡散させたRHが存在する粒界が表面から2.5mmの深さまで達していることを特徴とする。', '即使厚度为5mm或更大,本发明也具有高矫顽力H.cJ和最大能源产品(BH)max本发明的另一个目的是提供一种具有高值Square型Sq的NdFeB烧结磁体。根据本发明的NDFEB烧结磁体通过晶界扩散方法通过NDFEB烧结磁体的基材的基材的晶界扩散或/和Tb的差异,底物中稀土稀土量为12.7%以原子比率为16.0%,并且在基板的晶界处,稀土相位在基板的表面之间连接,距离表面2.5mm的深度,晶界漫射rH其特征在于,现有晶界达到2.5mm深度的晶界。', 'JP2011521979', 1278604800, 'JP5687621B2', 1426608000, 1355932800, NULL, 1422547200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, '2009164276', 'JP', 1247155200, 15, 15, NULL, NULL, 6, 2, 2, 2, 0, NULL, '863', NULL, '五貫 昭一', NULL, 'JP2005320628A | JP2007258455A | JP2008147634A | WO2006043348A1 | WO2007088718A1 | WO2008139690A1', 'JP6205511B2 | JPWO2016111346A1', NULL, 1, '\\20220510\\bae0dcf06e094923825b112670b7e9b4.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39512, 39514, 39513, 15);
INSERT INTO `os_patent` VALUES (23131, 'Sintered NdFeB magnet and method for manufacturing the same', '烧结钕铁硼磁体及其制造方法', 'US9589714B2', 'Disclosed is a sintered NdFeB magnet having high coercivity (HcJ) a high maximum energy product ((BH)max) and a high squareness ratio (SQ) even when the sintered magnet has a thickness of 5 mm or more. The sintered NdFeB magnet is produced by diffusing Dy and/or Tb in grain boundaries in a base material of the sintered NdFeB magnet by a grain boundary diffusion process. The sintered NdFeB magnet is characterized in that the amount of rare earth in a metallic state in the base material is between 12.7 and 16.0% in atomic ratio, a rare earth-rich phase continues from the surface of the base material to a depth of 2.5 mm from the surface at the grain boundaries of the base material, and the grain boundaries in which RH has been diffused by the grain boundary diffusion process reach a depth of 2.5 mm from the surface.', '公开了一种烧结NdFeB磁体，其具有高矫顽力（H  cJ ），高最大能积（（BH） max ）和高矩形比（SQ），即使在烧结时也是如此磁铁的厚度为5毫米或更厚。通过晶界扩散工艺在烧结的NdFeB磁体的基材中的晶界中扩散Dy和/或Tb来制造烧结的NdFeB磁体。烧结NdFeB磁体的特征在于，基材中金属态的稀土元素的原子比为12.7-16.0％，富稀土相从基材表面延伸至2.5的深度。从基材的晶界处的表面开始，通过晶界扩散处理扩散了R  H 的晶界，距离表面的深度为2.5mm。', 'US13/383034', 1278604800, 'US9589714B2', 1488816000, 1342022400, NULL, 1488816000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, '2009164276', 'JP', 1247155200, 15, 15, NULL, NULL, 46, 3, 0, 0, 34, NULL, '880', NULL, 'YANG, JIE', 'SU, XIAOWEI', 'CN101006534A | CN101076870A | CN101911227A | CN1265947A | CN1688000A | CN1802221A | CN1812008A | CN1938792A | EP1643513A1 | EP1705668A2 | EP1843360A1 | EP1981043A1 | EP2144257A1 | JP1987074048A | JP1987192566A | JP1989117303A | JP2000234151A | JP2004359873A | JP2005320628A | JP2006303435A | JP2007053351A | JP2007258455A | JP2007287874A | JP2007287875A | JP2007329250A | JP2008207013A | US20060213583A1 | US20060278517A1 | US20070240789A1 | US20080006345A1 | US20080223489A1 | US20100119703A1 | US20100129538A1 | US20100164663A1 | US20100282371A1 | US20120176211A1 | US20130169394A1 | US7594972B2 | US7824506B2 | WO2006004848A1 | WO2006043348A1 | WO2006064848A1 | WO2007088718A1 | WO2008032426A1 | WO2008139690A1', 'US10854380B2 | US20170103851A1 | US20180197680A1', 'Apr. 23, 2013 Notification of Reasons for Rejection issued in Japanese Application No. 2008-004845 with English-language translation. | Chinese Office Action dated Jan. 4, 2012 issued in Chinese Patent Application No. 200980101615.0 (with English-language translation). cited by applicant | Dec. 3, 2013 Office Action issued in U.S. Appl. No. 13/778,324. | Dec. 3, 2013 Office Action issued in U.S. Appl. No. 13/778,324. cited by applicant | Feb. 11, 2015 Office Action issued in U.S. Appl. No. 13/778,324. | Feb. 11, 2015 Office Action issued in U.S. Appl. No. 13/778,324. cited by applicant | Imanari et al, \"Study of Microstructure of Dy-Modified Neodymium Magnet,\" Collected Abstracts of the 2009 Spring Meeting of the Japan Institute of Metals, 2009, pp. 115 (with translation). cited by applicant | International Preliminary Report on Patentability dated Sep. 28, 2010 issued in International Patent Application No. PCT/JP2010/061712 (with translation). cited by applicant | International Search Report and Written Opinion issued in International Application No. PCT/JP2009/000068 mailed on Apr. 14, 2009. cited by applicant | Ishigaki, N. et al., \"Surface Improvements on Magnetic Properties for Small-Sized Nd--Fe--B Sintered Magnets,\" NEOMAX Technical Report, 2005, pp. 15-19, vol. 15, published by Kabushiki Kaisha NEOMAX, Japan. cited by applicant | Jan. 27, 2014 First Office Action issued in Chinese Application No. 201080030500.X with English-language translation. | Jan. 4, 2017 Office Action issued in Chinese Application No. 201310571585.8. | Jan. 5, 2017 Summons to Attend Oral Proceedings issued in European Application No. 09700197.8. cited by applicant. | Jul. 28, 2015 Office Action issued in Chinese Application No. 201310571585.8. | Jul. 28, 2015 Office Action issued in Chinese Application No. 201310571585.8. cited by applicant | Jul. 7, 2014 Extended European Search Report issued in European Patent Application No. 10797205.1. cited by applicant | Jun. 18, 2013 Office Action issued in U.S. Appl. No. 13/778,324. | Jun. 18, 2013 Office Action issued in U.S. Appl. No. 13/778,324. cited by applicant | Machida, K. et al., \"Grain Boundary Modification and Magnetic Characteristics of Nd--Fe--B Sintered Magnet,\" Abstracts of Spring Meeting of Japan Society of Powder and Powder Metallurgy, 2004, p. 1-47A, published by the Japan Society of Powder and Powder Metallurgy, Japan. cited by applicant | Mar. 11, 2016 Office Action issued in Chinese Application No. 201310571585.8. | Mar. 15, 2016 Office Action issued in Japanese Application No. 2015-010195. | Mar. 15, 2016 Office Action issued in Japanese Application No. 2015-010195. cited by applicant | Mar. 25, 2014 Notification of Reasons for Rejection issued in Japanese Application No. 2011-521979 with English-language translation. cited by applicant | May 11, 2016 Office Action issued in European Application No. 09700197.8. | May 11, 2016 Office Action issued in European Application No. 09700197.8. cited by applicant | Oct. 31, 2016 Office Action issued in Chinese Patent Application No. 201310261730.2. cited by applicant | Park, K.T., \"Effect of Metal-Coating and Consecutive Heat Treatment on Coercivity of Thin Nd--Fe--B Sintered Magnets,\" Proceedings of the Sixteenth International Workshop on Rare-Earth Magnets and Their Applications, 2000, pp. 257-264, published by The Japan Institute of Metals, Japan. cited by applicant | Sep. 11, 2015 Office Action issued in Chinese Application No. 201310261730.2. | Sep. 16, 2014 Office Action issued in U.S. Appl. No. 13/778,324. | Sep. 18, 2012 Japanese Office Action issued in Japanese Patent Application No. 2008-004845 (with English-language translation). cited by applicant | Sep. 19, 2014 Office Action issued in Chinese Application No. 201080030500.X (with English translation). cited by applicant | Sep. 28, 2016 Office Action issued in Chinese Patent Application 201310571585.8. cited by applicant | Sep. 29, 2015 Office Action issued in Chinese Application No. 201080030500.X. | Sep. 29, 2015 Office Action issued in Chinese Application No. 201080030500.X. cited by applicant', 1, '\\20220510\\0c1ef9697fcc4abdb27ae3b5b3e2ec4f.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39512, 39514, 39513, 15);
INSERT INTO `os_patent` VALUES (23132, 'Process for production of R-T-B based sintered magnets and R-T-B based sintered magnets', 'R-T-B系烧结磁铁及R-T-B系烧结磁铁的制造方法', 'US9415444B2', 'A method for producing a sintered R-T-B based magnet includes the steps of: providing a sintered R-T-B based magnet body 1; providing an RH diffusion source 2 including a metal or an alloy of a heavy rare-earth element RH (which is at least one of Dy an Tb); loading the sintered magnet body 1 and the RH diffusion source 2 into a processing chamber 3 so that the magnet body 1 and the diffusion source 2 are movable relative to each other and brought close to, or in contact with, each other; and performing an RH diffusion process by conducting a heat treatment on the sintered R-T-B based magnet body 1 and the RH diffusion source 2 at a temperature of 500° C. to 850° C. for at least 10 minutes while moving the magnet body 1 and the diffusion source 2 either continuously or discontinuously in the processing chamber 3.', '制造烧结的R-T-B基磁体的方法包括以下步骤：提供烧结的R-T-B基磁体 1;提供RH扩散源 2，其包括重稀土元素RH的金属或合金（其为Dy和Tb中的至少一种）;将烧结磁体 1 和RH扩散源 2 加载到处理室 3 ，使磁体 1 和扩散源 2 可相对于彼此移动并彼此靠近或接触;通过在500℃至850℃的温度下对RTB基烧结磁体 1和RH扩散源进行热处理来进行RH扩散处理C.在处理室中连续或不连续地移动磁体 1 和扩散源 2', 'US13/382587', 1278864000, 'US9415444B2', 1471276800, 1336579200, NULL, 1471276800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 17, 1, 0, 0, 0, NULL, NULL, NULL, '2009166488', 'JP', 1247587200, 10, 10, NULL, NULL, 10, 3, 1, 1, 6, NULL, '869', NULL, 'YANG, JIE', 'SU, XIAOWEI', 'JP2004296973A | JP2007258455A | JP2009043776A | JP2009194262A | US20080223489A1 | US20080286595A1 | US20100182113A1 | US20110012699A1 | US20110205006A1 | US5383978A', 'US10217562B2 | US11295880B2 | US20170323722A1', 'English translation of Official Communication issued in corresponding International Application PCT/JP2010/061776, mailed on Feb. 16, 2012. cited by applicant | Machine translation of JP2004-296973. Oct. 2004. cited by examiner | Machine translation of JP2007-258455. Oct. 2007. cited by examiner | Official Communication issued in International Patent Application No. PCT/JP2010/061776, mailed on Sep. 14, 2010. | STIC translation of JP2004-296973A. Oct. 2004. | Zirconia-Preciball (http://www.preciball.com/images/stories/preciball/Ceramic-grinding-media- .pdf). 2008. cited by examiner', 1, '\\20220510\\f242d2eb4b3e4b2784fb9fab15cbc761.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39515, 39517, 39516, 11);
INSERT INTO `os_patent` VALUES (23133, 'R-T-B系焼結磁石の製造方法', 'R-T-B基烧结磁体的制备方法', 'JP5510457B2', 'Ｒ−Ｔ−Ｂ系焼結磁石の製造方法は、Ｒ−Ｔ−Ｂ系焼結磁石体１を準備する工程と、重希土類元素ＲＨ（ＤｙおよびＴｂの少なくとも１種）の金属または合金からなるＲＨ拡散源２を準備する工程と、焼結磁石体１とＲＨ拡散源２とを相対的に移動可能かつ近接または接触可能に処理室３内に装入する工程と、Ｒ−Ｔ−Ｂ系焼結磁石体１とＲＨ拡散源２とを処理室３内で連続的または断続的に移動させながら、５００℃以上８５０℃以下の熱処理を１０分以上行うＲＨ拡散工程とを包含する。', '用于制造R-T-B基烧结磁体的方法由制备R-T-B基烧结磁体1和重质稀土元素RH的金属或合金组成(至少一种类型的DY和TB)。制备RH扩散的过程源2,在处理室3中充电到烧结磁体1和RH扩散源2的相对移动和近侧接触的步骤,而RTB系统连续地或间歇地移动烧结的磁体1和RH扩散源2连续或间歇地,在进行10分钟或更长时间的RH扩散步骤中包括500℃以上的热处理和850℃或更低。', 'JP2011522805', 1278864000, 'JP5510457B2', 1401811200, 1356537600, NULL, 1396540800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 21, 1, 0, 0, 0, NULL, NULL, NULL, '2009166488', 'JP', 1247587200, 10, 10, NULL, NULL, 4, 1, 0, 0, 0, NULL, NULL, NULL, '五貫 昭一', NULL, 'JP2004296973A | JP2008069415A | JP2009043776A | WO2007102391A1', 'JP5849956B2', NULL, 1, '\\20220510\\032ddcbff63444d7a40ea7e4db8c75fb.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39515, 39517, 39516, 11);
INSERT INTO `os_patent` VALUES (23134, 'Process for production of r-t-b based sintered magnets', 'r-t-b基烧结磁体的生产方法', 'EP2455954B1', 'A method for producing a sintered R-T-B based magnet includes the steps of: providing a sintered R-T-B based magnet body 1 ; providing an RH diffusion source 2 including a metal or an alloy of a heavy rare-earth element RH (which is at least one of Dy an Tb); loading the sintered magnet body 1 and the RH diffusion source 2 into a processing chamber 3 so that the magnet body 1 and the diffusion source 2 are movable relative to each other and brought close to, or in contact with, each other; and performing an RH diffusion process by conducting a heat treatment on the sintered R-T-B based magnet body 1 and the RH diffusion source 2 at a temperature of 500 °C to 850 °C for at least 10 minutes while moving the magnet body 1 and the diffusion source 2 either continuously or discontinuously in the processing chamber 3.', '一种烧结的R-T-B基磁体的制造方法包括以下步骤：提供烧结的R-T-B基磁体1；提供一种RH扩散源2，其包括重稀土元素RH的金属或合金（Dy和Tb中的至少一种）；将烧结磁体1和RH扩散源2装载到处理室3中，使得磁体1和扩散源2能够相对移动并且彼此靠近或接触。然后，一边使磁体1和扩散体移动，一边在500℃〜850℃的温度下对RTB系烧结磁体1和RH扩散源2进行至少10分钟的热处理，从而进行RH扩散处理。源2在处理室3中连续或不连续。', 'EP2010799816', 1278864000, 'EP2455954B1', 1571155200, 1337702400, NULL, 1571155200, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 28, 1, 0, 0, 0, NULL, NULL, NULL, '2009166488', 'JP', 1247587200, 10, 10, NULL, NULL, 9, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, 'EP2071597A1 | JP2004296973A | JP2007258455A | JP2009043776A | JP2009194262A | US5383978A | WO2007102391A1 | WO2008139690A1 | WO2009031292A1', NULL, NULL, 1, '\\20220510\\b4f14d94632a438b984a446b05a41330.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, '有效:DE | 失效:NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,SE,SI,MC,SK,SM,GB,IE,EE,CH,IS,IT,GR,AL,ES,AT,CZ,PL,RO,LI,NL | 未确认:HU,MK,MT,CY,TR', 39515, 39517, 39516, 11);
INSERT INTO `os_patent` VALUES (23135, 'VERFAHREN ZUR HERSTELLUNG VON GESINTERTEN R-T-B-MAGNETEN', '生产烧结R-T-B磁体的方法', 'DE602010061554T2', 'A process for the production of R-T-B based sintered magnets which comprises: a step of preparing R-T-B based sintered magnet bodies (1); a step of preparing heavy rare earth element (RH) diffusion sources (2) that consist of a metallic RH (Dy and/or Tb) or an alloy thereof; a step of charging a treating chamber (3) with the sintered magnet bodies (1) and the RH diffusion sources (2) in such a manner that the sintered magnet bodies (1) and the RH diffusion sources (2) can move relatively, come close to each other, or come into contact with each other; and an RH diffusion step of heat-treating the sintered magnet bodies (1) and the RH diffusion sources (2) at 500 to 850°C for at least 10 minutes while moving the sintered magnet bodies (1) and the RH diffusion sources (2) continuously or intermittently in the treating chamber (3).', '一种生产R-T-B基烧结磁体的方法，包括：制备R-T-B基烧结磁体（1）的步骤;制备由金属RH（Dy和/或Tb）或其合金组成的重稀土元素（RH）扩散源（2）的步骤;用烧结磁体（1）和RH扩散源（2）对处理室（3）充电的步骤，使得烧结磁体（1）和RH扩散源（2）可以相对移动，相互接近，或相互接触;以及在烧结磁体（1）和RH扩散源移动的同时，在500至850℃下对烧结磁体（1）和RH扩散源（2）进行热处理至少10分钟的RH扩散步骤（ 2）在处理室（3）中连续或间歇地。', 'DE602010061554', 1278864000, 'DE602010061554T2', 1571155200, 1571155200, NULL, 1571155200, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 36, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39518, 39517, 39519, 11);
INSERT INTO `os_patent` VALUES (23136, 'R-Fe-B系永久磁石の防錆方法', 'R-Fe-B系永久磁石の防锖方法', 'JP5709037B2', '【課題】 部品に埋め込んで使用するR-Fe-B系永久磁石などにおいて、金属被膜形成や樹脂被膜形成などの最終的には過剰となる防錆処理を施すことなく、温度や湿度が大きく変動したり、塩素イオンに晒され易い過酷な保管·輸送環境においても十分な耐食性を確保することのできるR-Fe-B系永久磁石の防錆方法を提供すること。\n\n【解決手段】 本発明のR-Fe-B系永久磁石の防錆方法は、請求項1記載の通り、R-Fe-B系永久磁石をアルミニウム箔の表裏両面に樹脂フィルムを積層したラミネートフィルムを用いて密封することを特徴とする。\n\n【選択図】図1', '要解决的问题：为R-Fe-B永磁体提供防锈方法，即使在温度和湿度变化大或暴露于氯离子的可能性很大的严苛存储/运输环境中，也能确保足够的耐腐蚀性，在没有采用金属涂层成型和树脂涂层成型等防锈的情况下，最终将在R-Fe-B永磁体等中嵌入元件和使用中。防腐剂：R的防锈方法-Fe-B永磁体的特征在于，R-Fe-B永磁体用层压膜密封，所述层压膜通过在铝箔的两侧层压树脂膜而形成。', 'JP2010193283', 1283184000, 'JP5709037B2', 1430323200, 1315411200, NULL, 1426176000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 4, 0, 0, 0, NULL, NULL, NULL, '2010018007', 'JP', 1264694400, 2, 2, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '池田 安希子', NULL, 'JP1996034483A | JP1996310565A | JP1998022154A | JP2002096427A | JP2007197070A', NULL, NULL, 1, '\\20220510\\00a48107dabd426597d2fcca35e1cf94.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39520, 39522, 39521, 2);
INSERT INTO `os_patent` VALUES (23137, 'R-Fe-B系焼結磁石の製造方法', '制造R-Fe-B基烧结磁体的方法', 'JP5760400B2', '【課題】  優れた耐食性を有するとともに、優れた密着性をもって金属被膜や樹脂被膜などの耐食性被膜を表面に形成することができる、RLの一部がRHによって置換されてなるR-Fe-B系焼結磁石の製造方法を提供すること。\n\n【解決手段】  処理対象とするR-Fe-B系焼結磁石に対してRHを外部から拡散導入する工程Aを行った後、酸素分圧が1×103Pa~1×105Paで水蒸気分圧が1000Pa未満であり、かつ、酸素分圧と水蒸気分圧の比率(酸素分圧/水蒸気分圧)が1~20000の雰囲気下、200℃~500℃で熱処理を行う工程Bを行うことを特徴とする。\n\n【選択図】  図1', '要解决的问题：提供一种R-Fe-B基烧结磁体的生产方法，在该表面上具有防腐蚀涂层，例如，可以形成具有优异的耐腐蚀性和优异的粘附性的金属涂层或树脂涂层，其中RL的一部分被RH代替。解决方案：在对要加工的R-Fe-B基烧结磁体进行外部引入RH的步骤A之后，在氧气分压为1次的气氛中，在200-500℃下进行热处理步骤B. 103-1＆次; 105Pa，蒸汽分压小于1000Pa，氧分压与蒸汽分压（氧分压/蒸汽分压）之比为1-20000。', 'JP2010256499', 1289923200, 'JP5760400B2', 1439308800, 1338998400, NULL, 1434643200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 17, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 13, 0, 0, 0, 0, NULL, NULL, NULL, '井上 健一', NULL, 'EP1191553A2 | JP2002093610A | JP2005285860A | JP2009043776A | JP2009124150A | JP2009194262A | JP2010232346A | JP2010251340A | JP2010251341A | US20120032764A1 | WO2007102391A1 | WO2009107397A1 | WO2010113465A1', NULL, NULL, 1, '\\20220510\\585d33d9d0294709843272e16648b450.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39523, 39525, 39524, 2);
INSERT INTO `os_patent` VALUES (23138, 'Magnetic circuit for faraday rotator and method of manufacturing magnetic circuit for faraday rotator', '法拉第转子磁路及法拉第转子磁路的制造方法', 'US8817370B2', 'A magnetic circuit for a Faraday rotator capable of suppressing generation of irreversible demagnetization is provided. This magnetic circuit (100, 200, 300, 400, 500, 600, 700, 800, 900) for a Faraday rotator includes a first magnet (2, 202, 302, 702, 802), a second magnet (3, 203, 303, 703, 803) and a third magnet (4, 304, 604, 704, 804, 904), and a first high coercive force region (4b, 304b, 604b, 704b, 904b) is provided in the vicinity of at least the inner peripheral surface of a third through-hole (4a, 304a, 604a, 704a, 804a, 904a) of the third magnet.', '提供一种用于法拉第旋转器的磁路，其能够抑制不可逆退磁的产生。用于法拉第旋转器的该磁路（100,200,300,400,500,600,700,800,900）包括第一磁体（2,202,302,702,802），第二磁体（3,203， 303,703,803）和第三磁体（4,304,604,704,804,904）和第一高矫顽力区域（4b，304b，604b，704b，904b）至少设置在附近第三磁体的第三通孔（4a，304a，604a，704a，804a，904a）的内周表面。', 'US13/321598', 1293379200, 'US8817370B2', 1408982400, 1331740800, NULL, 1408982400, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 29, 1, 0, 0, 0, NULL, NULL, NULL, '2009294914', 'JP', 1261670400, 11, 11, NULL, NULL, 8, 0, 0, 0, 2, NULL, '886', NULL, 'CHAPEL, DEREK S', NULL, 'JP1990176622A | JP2004302412A | JP2008270699A | JP2009229802A | US20080241513A1 | US20090237771A1 | US5528415A | US7206116B2', NULL, 'International Search Report of PCT/JP2010/073596, mailing date Feb. 1, 2011. | International Search Report of PCT/JP2010/073596, mailing date Feb. 1, 2011. cited by applicant.', 1, '\\20220510\\9d082bc5bc9f409eb405856d5c340b6d.png', NULL, NULL, 1, NULL, NULL, 19, NULL, NULL, NULL, 39526, 39528, 39527, 11);
INSERT INTO `os_patent` VALUES (23139, 'ファラデー回転子用磁気回路およびファラデー回転子用磁気回路の製造方法', '用于法拉第旋转器的磁路和用于制造法拉第旋转器的磁路的方法', 'JP5644761B2', '不可逆減磁が発生するのを抑制することが可能なファラデー回転子用磁気回路を提供する。このファラデー回転子用磁気回路(100、200、300、400、500、600、700、800、900)は、第1磁石(2、202、302、702、802)と、第2磁石(3、203、303、703、803)と、第3磁石(4、304、604、704、804、904)とを備え、第3磁石の第3貫通孔(4a、304a、604a、704a、804a、904a)の少なくとも内周面近傍には、第1高保磁力領域(4b、304b、604b、704b、904b)が設けられている。', '提供了用于法拉第旋转器的磁路,其能够抑制不可逆磁能器的发生。法拉第旋转器(100,200,300,400,500,600,700,800,900)的磁路是第一磁体(2,202,302,702,802)和第二磁体(3,203,303,703,803)和第三磁体(4,304 ,604,704,804,904),第三磁体的第三通孔(4a,304a,604a,704a,804a,904a,至少在至少内周表面附近,第一高磁力区域(4b提供304b,604b,704b,904b)。', 'JP2011514928', 1293379200, 'JP5644761B2', 1419350400, 1368028800, NULL, 1415894400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 31, 1, 0, 0, 0, NULL, NULL, NULL, '2009294914', 'JP', 1261670400, 11, 11, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, '山本 貴一', NULL, 'JP1990176622A | JP2004302412A | JP2008270699A | JP2009229802A', NULL, NULL, 1, '\\20220510\\ae5377f43f724a558b360393ad6d2147.png', NULL, NULL, 1, NULL, NULL, 15, NULL, NULL, NULL, 39526, 39528, 39527, 11);
INSERT INTO `os_patent` VALUES (23140, '耐食性磁石の製造方法', '耐腐蚀磁铁的制造方法', 'JP5573663B2', '【課題】 構成元素としてZr、Nd、フッ素、酸素を少なくとも含有する化成被膜(但しリンは含有しない)をR-Fe-B系焼結磁石の表面に形成することによる磁石に対する耐食性の付与を、化成処理反応性を向上させることによって効果的に行うことができる耐食性磁石の製造方法を提供すること。\n\n【解決手段】 少なくともZrおよびフッ素を含有する水溶液に処理対象とする磁石を浸漬し、振幅が1mm〜7mmで振動数が10Hz〜100Hzの振動を磁石に与えながら化成処理を行うことを特徴とする。\n\n【選択図】図1', '要解决的问题：提供一种耐腐蚀磁体的制造方法，该磁体能够有效地赋予磁体耐腐蚀性，该磁体是通过形成至少含有Zr，Nd，氟和氧的转化涂层（不含磷）制成的。通过提高化学转化处理反应性，作为R-Fe-B系烧结磁铁表面的构成元素。溶剂：耐腐蚀性磁铁的制造方法包括：将待处理磁铁浸入含水溶液中的方法至少Zr和氟;并且在给予磁体振幅为1mm至7mm且频率为10Hz至100Hz的振动的同时进行化学转化处理。', 'JP2010289695', 1293379200, 'JP5573663B2', 1408464000, 1342627200, NULL, 1405008000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 10, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 9, 0, 0, 0, 0, NULL, NULL, NULL, '小池 秀介', NULL, 'JP1986000582A | JP1992022008A | JP1998183370A | JP2000150216A | JP2001006909A | JP2002134342A | JP2002237407A | JP2010263223A | WO2010001878A2', NULL, NULL, 1, '\\20220510\\98a3d6c5409f4f20bf282567c5053b12.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 39529, 39531, 39530, 2);
INSERT INTO `os_patent` VALUES (23141, '耐食性磁石およびその製造方法', '耐腐蚀磁铁及其制造方法', 'JP5573848B2', '本発明の課題は、リン酸塩被膜などの従来の化成被膜よりも耐食性に優れた化成被膜を表面に有するR-Fe-B系焼結磁石およびその製造方法を提供することである。その解決手段としての本発明の化成被膜を表面に有するR-Fe-B系焼結磁石は、R-Fe-B系焼結磁石(Rは少なくともNdを含む希土類元素)の表面に、構成元素としてR、フッ素、酸素を含有する内側層と、構成元素としてZr、Fe、酸素を含有する非晶質の外側層を少なくとも含む積層構造の化成被膜(但しリンは含有しない)を有することを特徴とする。', '本发明的一个目的是提供一种R-Fe-B基烧结磁体,该烧结磁体具有优于常规复合膜的优异耐腐蚀性,例如磷酸膜和制造方法。具有本发明的成形膜的R-Fe-B基烧结磁体作为表面的溶液是R-Fe-B基烧结磁体(R是至少含有Nd的稀土元素),以及作为含有R,氟,氧和含有Zr,Fe和氧的层叠结构的层叠结构的内层作为构成元素的内层,其特征在于具有层压结构。然而。然而。它会是。', 'JP2011547708', 1293465600, 'JP5573848B2', 1408464000, 1368374400, NULL, 1405008000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 17, 3, 0, 0, 0, NULL, NULL, NULL, '2009297153', 'JP', 1261929600, 9, 9, NULL, NULL, 11, 0, 0, 0, 0, NULL, NULL, NULL, '五貫 昭一', NULL, 'JP1992022008A | JP1994244011A | JP2000199074A | JP2004327966A | JP2005210100A | JP2006066853A | JP2006286779A | JP2007207936A | JP2008270699A | WO2002103080A1 | WO2010001878A2', NULL, NULL, 1, '\\20220510\\5e5b547c3b124971b96d0db22d302f6a.png', NULL, NULL, 1, NULL, NULL, 13, NULL, NULL, NULL, 39532, 39534, 39533, 10);
INSERT INTO `os_patent` VALUES (23142, '耐食性R-Fe-B系焼結磁石の製造方法', '耐腐蚀R-Fe-B基烧结磁体的制备方法', 'JP5691515B2', '【課題】 RH含有量が少ないか、またはRHを含まない、耐食性に優れるR-Fe-B系焼結磁石の製造方法を提供すること。\n\n【解決手段】 重希土類元素(RH:DyおよびTbから選択される少なくとも1種)含有量が4.5mass%以下のR-Fe-B系焼結磁石に対し、酸素分圧が1×103Pa〜1×105Paで水蒸気分圧が1000Pa未満であり、かつ、酸素分圧と水蒸気分圧の比率(酸素分圧/水蒸気分圧)が1〜20000の雰囲気下、200℃〜450℃で熱処理を行う工程を含み、かつ、熱処理を行った温度からの磁石の降温を、少なくとも100℃に至るまで650℃/時間以上の平均冷却速度で行うことを特徴とする。\n\n【選択図】図1', '要解决的问题：提供一种制造R-Fe-B基烧结磁体的方法，该烧结磁体仅含有少量RH或不含RH，并且具有优异的耐腐蚀性。溶剂：制造方法R-Fe-B系烧结磁铁包括在氧分压为1×10  3  -1×的气氛中，在200-450℃下进行热处理的步骤。 10  5  Pa，水蒸气分压低于1000 Pa，氧分压与水蒸气分压之比（氧分压/水蒸气分压）对于含有4.5质量％或更少的重稀土元素（选自RH：Dy和Tb中的至少一种）的R-Fe-B基烧结磁体，为1-20000。磁体的温度从热处理温度以650℃/小时或更高的平均冷却速率降低至少100℃。', 'JP2010293533', 1293465600, 'JP5691515B2', 1427817600, 1343232000, NULL, 1423756800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 10, 0, 0, 0, 0, NULL, NULL, NULL, '瀧内 健夫', NULL, 'JP2002057052A | JP2006156853A | JP2006210864A | JP2007103523A | JP2007207936A | JP2009054704A | JP2010251340A | JP2010251341A | WO2009041639A1', NULL, NULL, 1, '\\20220510\\6a8c8e2d57df4d2b8c2f2169d03c2354.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 39535, 39537, 39536, 3);
INSERT INTO `os_patent` VALUES (23143, 'Corrosion-resistant magnet and method for producing the same', '耐腐蚀磁铁及其制造方法', 'EP2521141B1', 'An object of the present invention is to provide an R-Fe-B based sintered magnet having on a surface thereof a chemical conversion film with higher corrosion resistance than a conventional chemical conversion film such as a phosphate film, and a method for producing the same. The R-Fe-B based sintered magnet having a chemical conversion film on the surface thereof of the present invention as a means for achieving the object is characterized by comprising a chemical conversion film on a surface of an R-Fe-B based sintered magnet wherein R is a rare-earth element including at least Nd, the chemical conversion film having a laminate structure including at least an inner layer that contains R, fluorine, and oxygen as constituent elements and an outer layer that is amorphous and contains Zr, Fe, and oxygen as constituent elements, provided that no phosphorus is contained in the film.', '本发明的目的是提供一种R-Fe-B系烧结磁铁及其制造方法，该烧结磁铁的表面具有比以往的化学转化膜如磷酸盐膜具有更高耐腐蚀性的化学转化膜。 。在本发明的表面上具有化学转化膜的R-Fe-B基烧结磁体作为实现该目的的手段，其特征在于在R-Fe-B基烧结磁体的表面上包含化学转化膜。其中R是至少包括Nd的稀土元素，该化学转化膜具有层压结构，该层压结构至少包括含有R，氟和氧作为构成元素的内层和无定形的含有Zr，Fe的外层并且氧作为构成元素，条件是膜中不含磷。', 'EP2010841025', 1293465600, 'EP2521141B1', 1478620800, 1352217600, NULL, 1478620800, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 20, 3, 0, 0, 0, NULL, NULL, NULL, '2009297153', 'JP', 1261929600, 9, 9, NULL, NULL, 9, 0, 0, 0, 0, NULL, '874', NULL, NULL, NULL, 'EP1180771A2 | EP1511046A1 | JP2000199074A | JP2004327966A | JP2008270699A | WO2002103080A1 | WO2009041639A1 | WO2010001878A2', NULL, NULL, 1, '\\20220510\\bfeee9c985624304a0a0a7e9fec5f860.png', NULL, NULL, 1, NULL, NULL, 15, NULL, NULL, '有效:DE | 失效:RS,NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,HU,SE,SI,MC,SK,SM,GB,IE,MK,EE,CH,MT,IS,IT,GR,AL,ES,AT,CY,CZ,PL,RO,LI,TR,NL', 39532, 39534, 39533, 10);
INSERT INTO `os_patent` VALUES (23144, 'KORROSIONSBESTÄNDIGER MAGNET UND VERFAHREN ZU SEINER HERSTELLUNG', '耐腐蚀磁体和生产方法', 'DE602010037926T2', 'Provided is an R-Fe-B sintered magnet the surface of which has a chemical coating that is superior in corrosion resistance to conventional chemical coatings such as phosphate coatings, and also provided is a method for producing the R-Fe-B sintered magnet. The R-Fe-B sintered magnet the surface of which has a chemical coating is obtained by chemically coating the surface of an R-Fe-B sintered magnet (where R is a rare earth element that contains at least Nd) with a phosphorus-free laminated structure comprising at least an inner layer containing R, fluorine, and oxygen as structural elements and an amorphous outer layer containing Zr, Fe, and oxygen as structural elements.', '本发明提供一种R-Fe-B烧结磁铁，其表面具有耐腐蚀性优于常规化学涂料如磷酸盐涂层的化学涂层，并且还提供了一种制备R-Fe-B烧结磁铁的方法。表面具有化学涂层的R-Fe-B烧结磁体是通过用磷 - 化学涂覆R-Fe-B烧结磁体（其中R是含有至少Nd的稀土元素）的表面而获得的。自由层压结构包括至少一个含有R，氟和氧的内层作为结构元素和一个含有Zr，Fe和氧作为结构元素的无定形外层。', 'DE602010037926', 1293465600, 'DE602010037926T2', 1478620800, 1478620800, NULL, 1478620800, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 34, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '855', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39538, 39534, 39539, 10);
INSERT INTO `os_patent` VALUES (23145, 'R-T-B系焼結磁石の製造方法', 'R-T-B基烧结磁体的制备方法', 'JP5854304B2', '【課題】量産性に優れた重希土類元素RHの拡散処理を提供する。\n\n【解決手段】R-T-B系焼結磁石の製造方法はR-T-B系焼結磁石体を準備する工程と、重希土類元素RH(Dy、Tbの少なくともいずれか1種)の含有量が前記R-T-B系焼結磁石体の含有量より少なくとも0.5質量%多いR-T-B系合金からなるRH拡散源を準備する工程と、前記R-T-B系焼結磁石体と前記RH拡散源とを相対的に移動可能かつ近接または接触可能に処理容器内に装入する工程と、前記R-T-B系焼結磁石体と前記RH拡散源とを前記処理室内にて連続的または断続的に移動させながら、800℃以上1000℃以下の熱処理を行うRH拡散工程と、を包含する。\n\n【選択図】図1', '要解决的问题：提供大量生产优异的重稀土元素RH的扩散处理。\n\n制造RTB基烧结磁体的方法包括制备RTB基烧结磁体和制备具有重稀土元素RH含量（Dy和Tb中的至少一种）的RTB基烧结磁体的步骤制备由RTB基合金制成的RH扩散源，其比主体含量高至少0.5质量％，处理RTB基烧结磁体和RH扩散源的步骤相对可移动且接近或接触将RTB基烧结磁体和RH扩散源连续或间歇地加载到处理室中的步骤，同时通过RH扩散在800℃或更高且1000℃或更低的温度下进行热处理它包括的步骤。\n\n点域1', 'JP2011008963', 1295366400, 'JP5854304B2', 1454947200, 1344441600, NULL, 1450368000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 10, 0, 0, 0, 0, NULL, NULL, NULL, '小林 大介', NULL, 'JP2002093610A | JP2004296973A | JP2007273815A | JP2009043776A | JP2009170541A | JP2009289994A | WO2006043348A1 | WO2007102391A1 | WO2008139690A1 | WO2010113465A1', NULL, NULL, 1, '\\20220510\\96e7472103904d25be99e007892a98db.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39540, 39542, 39541, 2);
INSERT INTO `os_patent` VALUES (23146, 'R-Fe-B系希土類焼結磁石およびその製造方法', 'R-Fe-B系稀土烧结磁铁及其制造方法', 'JP5146552B2', '【課題】外殻部に重希土類元素RHが濃縮された主相結晶粒をR-Fe-B系希土類焼結磁石体の内部にも効率よく形成し、残留磁束密度の低下を抑制しつつ保磁力を向上させる。また、耐食性を高める。\n\n【解決手段】R-Fe-B系希土類焼結磁石は、軽希土類元素RL(NdおよびPrの少なくとも1種)を主たる希土類元素Rとして含有するR2Fe14B型化合物結晶粒を主相として有するR-Fe-B系希土類焼結磁石体と、前記R-Fe-B系希土類焼結磁石体の表面に形成された保護層とを備える。R-Fe-B系希土類焼結磁石体は、重希土類元素RH(Dy、HoおよびTbからなる群から選択された少なくとも1種)を含有し、保護層は、軽希土類元素RLを含有し、厚さが0.5μm以上の部分を有している。\n\n【選択図】図1', '要解决的问题：为了有效地形成主要相晶粒，其中重稀土元素RH即使在R-Fe-B基稀土烧结磁体中也集中在外壳部分中，以在抑制劣化的同时提高矫顽力。剩余磁通密度，并提高耐腐蚀性。 ŽSOLUTION：这种基于R-Fe-B的稀土烧结磁体包括：R-Fe-B基稀土烧结磁体，其主要相为R  2  Fe  14 含有轻稀土元素RL（至少种类为Nd和Pr）的B型复合晶粒作为主要稀土元素R;和在R-Fe-B基稀土烧结磁体表面上形成的保护层。 R-Fe-B系稀土烧结磁体包含重稀土元素RH（至少选自Dy，Ho和Tb中的一种）。保护层含有轻稀土元素RL，并且具有厚度≥0.5μm的部分。 Ž', 'JP2011009691', 1295452800, 'JP5146552B2', 1361289600, 1305734400, NULL, 1354809600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 19, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 11, 2, 2, 2, 0, NULL, NULL, NULL, '高橋 克', NULL, 'JP1987074048A | JP1987192566A | JP1992328804A | JP2004296973A | JP2004304038A | JP2005011973A | JP2005175138A | JP2005285859A | JP2007258455A | JP2007273815A | WO2005096326A1', 'CN104252938A | CN104252938B', NULL, 1, '\\20220510\\bbb84894f7b24c4abf0bbef44e5c195d.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39543, 39202, 39544, 5);
INSERT INTO `os_patent` VALUES (23147, 'R-T-B系焼結磁石の製造方法', 'R-T-B基烧结磁体的制备方法', 'JP5668491B2', '【課題】磁石の中心部まで重希土類元素RHを導入するR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】R-T-B系焼結磁石の製造方法において、磁石素材と重希土類元素RH(DyおよびTbの少なくとも1種)の金属または合金からなるRH拡散源とを相対的に移動可能かつ近接または接触可能に処理室内に投入する工程、磁石素材とRH拡散源とを処理室内で連続的または断続的に移動させながら800℃以上1000℃以下の熱処理を10分以上行うRH拡散工程をした後、作製した磁石中間体に表面加工を行ってから再度RH拡散工程を行う。\n\n【選択図】図1', '要解决的问题：提供一种制造R-T-B基烧结磁体的方法，其中重稀土元素RH引入其中心部分。解决方案：RTB基烧结磁体的制造方法包括：将磁性材料和由重稀土元素RH（至少一种Dy和Tb）的金属或合金组成的RH扩散源放入加工中的步骤腔室采用相对可移动，平易近人或可接触的方式;RH扩散步骤，在800℃或更高，1000℃或更低的温度下进行热处理10分钟或更长时间，同时连续或间歇地移动处理室中的磁体材料和RH扩散源;以及在对制造的磁体中间体进行表面处理之后再次进行RH扩散步骤的步骤。', 'JP2011013102', 1295884800, 'JP5668491B2', 1423670400, 1345046400, NULL, 1419523200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 10, 0, 0, 0, 0, NULL, NULL, NULL, '池田 安希子', NULL, 'JP2004296973A | JP2005285859A | JP2007284738A | JP2008147634A | JP2009054754A | US20080247898A1 | US20100182113A1 | WO2007102391A1 | WO2009004794A1 | WO2011007758A1', NULL, NULL, 1, '\\20220510\\8220fe7e6b05453fa95da715e11190c9.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39545, 39547, 39546, 2);
INSERT INTO `os_patent` VALUES (23148, '希土類永久磁石の製造方法', '稀土永磁体的制造方法', 'JP5757394B2', '(修正有)\n\n【課題】Dy、Tbなどを使用することなく、R-T-B系永久磁石粉末の保磁力を向上させる製造方法を提供する。\n\n【解決手段】HDDR処理によって作製されたR-T-B系永久磁石粉末を準備する(工程A)。RはNd、PrをR全体に対して80原子%以上含む希土類元素、TはFeまたはFeの一部をCoおよび/またはNiで置換したものであり、Feを50原子%以上含む遷移金属元素である。一方、R’とAlからなり、かつ、Alが2原子%以上65原子%以下であるR’-Al系合金粉末を準備する(工程B)。R’はNdおよび/またはPrをR’全体に対して90原子%以上含み、DyおよびTbを含まない希土類元素である。R-T-B系永久磁石粉末とR’-Al系合金粉末とを混合した(工程C)後、混合粉末を不活性雰囲気または真空中において550℃以上900℃以下の温度で熱処理を行う(工程D)。\n\n【選択図】図3', '（经修改）\n\n要解决的问题：提供一种制造方法，用于在不使用Dy，Tb等的情况下改善R-T-B基永磁体粉末的矫顽力。\n\n溶液：制备通过HDDR处理制备的基于R-T-B的永磁体粉末（步骤A）。 R是相对于R全部含有80at％以上的Nd和Pr的稀土元素，T是被Co和/或Ni取代的Fe或Fe的一部分，和含有50原子％以上的Fe的过渡金属元素。它是。另一方面，制备包含R\'和Al并且具有2at％或更多且65at％或更少的Al的R\'-Al基合金粉末（步骤B）。 R\'是相对于整个R\'含有90原子％以上的Nd和/或Pr且不含Dy和Tb的稀土元素。在混合R-T-B永磁体粉末和R\'-Al基合金粉末（步骤C）之后，将混合粉末在惰性气氛或真空中在550℃至900℃的温度下进行热处理（步骤D）。\n\n点域', 'JP2011013529', 1295971200, 'JP5757394B2', 1438099200, 1331136000, NULL, 1434038400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 27, 4, 0, 0, 0, NULL, NULL, NULL, '2010171659', 'JP', 1280419200, 2, 2, NULL, NULL, 14, 0, 0, 0, 2, NULL, NULL, NULL, '池田 安希子', NULL, 'EP0249973A1 | JP1988114939A | JP1988252403A | JP1995272914A | JP1997275004A | JP2000096102A | JP2002093610A | JP2005015918A | JP2008060241A | JP2008069415A | JP2008172037A | JP2010109098A | US20020059965A1 | US5641363A', NULL, 'W. F. Li et al.: “The role of grain boundariesin the coercivity of hydrogenation disproportionation desorption recombinationprocessed Nd-Fe-B powders”:Journal of Applied Physics,Vol. 105, 07A706 (2009). | W. F. Li et al.:“Coercivity mechanism of hydrogenationdisproportionation desorption recombination processed Nd-Fe-B based magnets”:Applied Physics Letters, Vol. 93, 052505 (2008).', 1, '\\20220510\\ca7b104bf52d4805ad0e98c3c8e3b386.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39548, 39550, 39549, 2);
INSERT INTO `os_patent` VALUES (23149, '希土類系磁石用原料合金の水素粉砕粉の製造方法及び製造装置', '用于制造原土磁体原料合成水凝粉的方法和设备', 'JP5750915B2', '【課題】水素粉砕粉の酸素含有量を調整することができ、また、酸素含有量が調整された低酸素水素粉砕粉と通常酸素水素粉砕粉の水素粉砕後の水素粉砕粉の回収、水素粉砕粉への潤滑剤の添加、水素粉砕粉と潤滑剤の混合を共通の容器で行うことができる希土類系磁石用原料合金の水素粉砕粉の製造方法及び製造装置の提供。\n\n【解決手段】  回収室内を減圧した後に、処理容器内の水素粉砕粉を回収室内に排出し、水素粉砕粉を回収室内に排出した後に、回収室内に不活性ガス及び/又は酸素含有ガスを導入し、回収室内を所定圧力及び所定酸素濃度とした後に、水素粉砕粉を回収容器に回収する。回収容器内で水素粉砕粉に潤滑剤を添加した後、回収容器を冷却しながら水素粉砕粉と潤滑剤を混合する。\n\n【選択図】        図1', '要解决的问题：提供一种制造稀土磁体原料合金的氢粉末粉末的方法，该粉末粉末可以调节氢粉末粉末的氧含量，并且还可以在低氧气之后回收氢粉末粉末将已经调节氧含量的氢粉碎粉末和待氢气粉碎的普通氧气粉末进行氢粉碎，可以向氢粉末粉末中添加润滑剂并且可以将氢粉碎的粉末和润滑剂混合在一起。一个普通的容器;并提供一种制造装置。解决方案：制造方法包括以下步骤：降低回收室中的压力;随后将处理容器中的氢粉末粉末排放到回收室中;将氢粉末粉末排出到回收室中后，将惰性气体和/或含氧气体导入回收室，将回收室内设定为规定的压力和规定的氧浓度。随后在回收容器中回收氢粉末粉末;将润滑剂加入回收容器中的氢粉末粉末中;然后在冷却回收容器的同时混合氢粉碎的粉末和润滑剂。', 'JP2011018530', 1296403200, 'JP5750915B2', 1437494400, 1345651200, NULL, 1432828800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 44, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 21, 0, 0, 0, 0, NULL, NULL, NULL, '塩▲崎▼ 義晃', NULL, 'JP1992191302A | JP1993094922A | JP1994006728A | JP1994346102A | JP2000144242A | JP2001009595A | JP2002175931A | JP2002208509A | JP2002339005A | JP2003082406A | JP2005082891A | JP2005118625A | JP2005232472A | JP2006286859A | JP2009079241A | JP2011214044A | JP2012158792A | WO2011013489A1 | WO2012105399A1', NULL, NULL, 1, '\\20220510\\10aeba0ed57544c5be4f593430a26f78.png', NULL, NULL, 1, NULL, NULL, 23, NULL, NULL, NULL, 39551, 39553, 39552, 2);
INSERT INTO `os_patent` VALUES (23150, '希土類系磁石用原料合金の水素粉砕粉の回収方法及び回収装置', '用于回收原土磁体原料合金粉末状粉末的方法和装置', 'JP5699637B2', '【課題】得られる希土類系磁石の酸素量を低減することにより、磁気特性の向上を図ることができ、また、水素粉砕粉の酸素含有量を調整することができることができる希土類系磁石用原料合金の水素粉砕粉の回収方法及び回収装置を提供すること。\n\n【解決手段】 回収室内を減圧した後に、処理容器内の希土類系磁石用原料合金を回収室内に排出し、希土類系磁石用原料合金を回収室内に排出した後に、回収室内に酸素含有ガスあるいは酸素含有ガスと不活性ガスを同時に導入し、回収室内を所定圧力及び所定酸素濃度とした後に、希土類系磁石用原料合金を回収容器に回収することを特徴とする。\n\n【選択図】図1', '要解决的问题：提供一种用于回收稀土磁体的原料合金的氢粉末粉末的方法和装置，能够通过减少所获得的稀土磁体的氧量来改善磁特性，并且能够调节氢粉末的氧含量。溶剂：在回收稀土磁体用原料合金的氢粉末粉末的方法中，处理容器内的稀土类磁铁用原料合金在回收室中排出。在回收室中的压力降低之后，在用于稀土磁体的原料合金在回收室中排出后，同时将含氧气体或含氧气体和惰性气体引入回收室，并且原料在将回收室中的压力和氧浓度设定为预定压力之后，在回收容器中回收稀土磁体用合金和预定的氧浓度。', 'JP2011018494', 1296403200, 'JP5699637B2', 1429027200, 1345651200, NULL, 1424966400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 32, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 10, 0, 0, 0, 0, NULL, NULL, NULL, '田中 永一', NULL, 'JP1994006728A | JP1994346112A | JP2005118625A | JP2006286859A | JP2012160545A | JP4840544B2 | JP5163839B2 | JP5560848B2', NULL, NULL, 1, '\\20220510\\33b74f51f2d54fd0b837eb188613c89e.png', NULL, NULL, 1, NULL, NULL, 19, NULL, NULL, NULL, 39554, 39556, 39555, 2);
INSERT INTO `os_patent` VALUES (23151, 'Magnetic force characteristics computing method, magnetic force characteristics computing device, and computer program', '磁力特性计算方法、磁力特性计算装置及计算机程序', 'EP2535907B1', 'A prestored database showing a correspondence of δ (depth)/ΔHcJ (coercivity increment) and a prestored database showing a correspondence of Dy introduction amount/ΔHcJ are used to obtain distribution of an introduction amount in a magnet from shape information of the magnet and information of a Dy introduction face (S8) and compute distribution of ΔHcJ in the magnet from the distribution of a Dy introduction amount (S9). Regarding a magnet having a coercivity that is distributed non-uniformly, a J/H curve is computed using the computed distribution of ΔHcJ (S11 and S 12), and a demagnetizing factor at a predetermined temperature (100°C) is computed using a temperature coefficient (S13).', '显示δ（深度）/ΔHcJ（矫顽力增量）的对应关系的预存数据库和显示Dy引入量/ΔHcJ的对应关系的预存数据库用于从磁体的形状信息和信息获得磁体中的引入量的分布。根据Dy导入量的分布（S8）计算Dy导入面（S8），并计算磁体中ΔHcJ的分布（S9）。关于具有非均匀分布的矫顽力的磁体，使用计算的ΔHcJ分布（S11和S12）计算J / H曲线，并且使用a计算预定温度（100℃）下的退磁因子。温度系数（S13）。', 'EP2011742215', 1297094400, 'EP2535907B1', 1491321600, 1355846400, NULL, 1491321600, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 57, 1, 0, 0, 0, NULL, NULL, NULL, '2010027963', 'JP', 1265731200, 10, 10, NULL, NULL, 11, 0, 0, 0, 0, NULL, '887', NULL, NULL, NULL, 'JP2004257879A | JP2006179963A | JP2007273815A | JP2009194262A | US20080241513A1 | US6411095B1 | WO2006043348A1 | WO2007102391A1 | WO2008123251A1 | WO2009031292A1', NULL, NULL, 1, '\\20220510\\cd870c790bec4ee88e2dd7921d5bde44.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, '有效:DE | 失效:RS,NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,HU,SE,SI,MC,SK,SM,GB,IE,MK,EE,CH,MT,IS,IT,GR,AL,ES,AT,CY,CZ,PL,RO,LI,TR,NL', 39557, 39559, 39558, 11);
INSERT INTO `os_patent` VALUES (23152, 'Magnetic force characteristic computing method, magnetic force characteristic computing device and computer program', '磁力特性计算方法、磁力特性计算装置及计算机程序', 'US9372244B2', 'A prestored database showing a correspondence of δ (depth)/ΔHcJ (coercivity increment) and a prestored database showing a correspondence of Dy introduction amount/ΔHcJ are used to obtain distribution of an introduction amount in a magnet from shape information of the magnet and information of a Dy introduction face and compute distribution of ΔHcJ in the magnet from the distribution of a Dy introduction amount. Regarding a magnet having a coercivity that is distributed non-uniformly, a J/H curve is computed using the computed distribution of ΔHcJ, and a demagnetizing factor at a predetermined temperature (100° C.) is computed using a temperature coefficient.', '显示δ（深度）/ΔHcJ（矫顽力增量）的对应关系的预存数据库和显示Dy引入量/ΔHcJ的对应关系的预存数据库用于从磁体的形状信息和信息获得磁体中的引入量的分布。根据Dy导入量的分布，计算Dy导入面的数量，并计算磁体中ΔHcJ的分布。关于具有非均匀分布的矫顽力的磁体，使用计算的ΔHcJ分布计算J / H曲线，并且使用温度系数计算在预定温度（100℃）下的退磁因子。', 'US13/577866', 1297094400, 'US9372244B2', 1466438400, 1355932800, NULL, 1466438400, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 52, 1, 0, 0, 0, NULL, NULL, NULL, '2010027963', 'JP', 1265731200, 10, 10, NULL, NULL, 18, 2, 0, 0, 1, NULL, '888', NULL, 'TOATLEY, GREGORY J', 'SUAREZ, FELIX', 'JP1992228649A | JP2004257879A | JP2006179963A | JP2007273815A | JP2009194262A | JP2011007512A | US20050151609A1 | US20060151609A1 | US20080241513A1 | US20100079024A1 | US20100109468A1 | US20110240909A1 | US6411095B1 | WO2006043348A1 | WO2007102391A1 | WO2008123251A1 | WO2009031292A1', 'US20140046608A1 | US9547051B2', 'Extended European Search Report for European Application No. 11742215.4 dated Feb. 8, 2016. cited by applicant.', 1, '\\20220510\\611421c8aea64edcbe226713027e4f53.png', NULL, NULL, 1, NULL, NULL, 17, NULL, NULL, NULL, 39557, 39559, 39558, 11);
INSERT INTO `os_patent` VALUES (23153, '磁力特性算出方法、磁力特性算出装置及びコンピュータプログラム', '磁力特性计算方法，磁力特性计算装置和计算机程序', 'JP5626226B2', '予め記憶してあるδ(深度)—ΔHcJ(保磁力増加量)の対応を示すデータベース及びDy導入量-ΔHcJの対応を示すデータベースを用い、磁石の形状情報及びDy導入面の情報から磁石内の導入量の分布を求め(S8)、Dy導入量の分布から磁石内でのΔHcJの分布を算出する(S9)。保磁力が均質でなく分布を有する磁石について、算出したΔHcJの分布を用いてJ-Hカーブを算出し(S11及び12)、温度係数を用いて所定の温度(100℃)での減磁率を算出する(S13)。', '使用指示对应Δ(深度)-ΔHCJ(矫顽力量)-eΔHCJ(矫顽力量)-OTRA的对应关系的数据库,磁体的形状信息和Dy引入表面的信息磁体确定引入量的分布(S8),并且根据Dy引入量的分布计算磁体中的ΔHCJ的分布(S9)。使用计算出的ΔHCJ(S11和12)的分布来计算JH曲线,并且使用具有具有分配的磁体的温度系数(S11和12)计算预定温度(100°C)处的退磁速率矫顽力和分布。(S13)。', 'JP2011553840', 1297094400, 'JP5626226B2', 1416326400, 1371052800, NULL, 1412870400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 31, 1, 0, 0, 0, NULL, NULL, NULL, '2010027963', 'JP', 1265731200, 10, 10, NULL, NULL, 9, 0, 0, 0, 0, NULL, NULL, NULL, '井上 健一', NULL, 'JP2004257879A | JP2006179963A | JP4228649B2 | JP5201144B2 | JP5310544B2 | WO2006043348A1 | WO2007102391A1 | WO2008123251A1', NULL, NULL, 1, '\\20220510\\73fba8c85535463ca751720bdd9f190f.png', NULL, NULL, 1, NULL, NULL, 17, NULL, NULL, NULL, 39557, 39559, 39558, 11);
INSERT INTO `os_patent` VALUES (23154, 'VERFAHREN ZUR BERECHNUNG VON CHARACKTERISTIKEN MAGNETISCHER KRÄFTE, VORRICHTUNG ZUR BERECHNUNG MAGNETISCHER EIGENSCHAFTEN UND COMPUTERPROGRAMM DAFÜR', '计算磁力的标签明显性的方法,用于计算磁性和计算机程序的装置', 'DE602011036671T2', 'Using a database indicating correspondences between d (depth) and ?HcJ (coercivity increase) and a database indicating correspondences between introduced Dy quantities and ?HcJ stored in advance, the distribution of the Dy introduced into a magnet is found from information about the shape and the introduction surface of the magnet (S8), and the distribution of ?HcJ in the magnet is calculated from the distribution of the introduced Dy (S9). For magnets not having a homogeneous coercive force distribution, the calculated ?HcJ distribution is used to calculate a J-H curve (S11 and S12), and the demagnetizing factor at a prescribed temperature (100C) is calculated using a temperature coefficient (S13).', '使用指示d（深度）和ΔHcJ（矫顽力增加）之间的对应关系的数据库和指示预先存储的引入的Dy量和ΔHcJ之间的对应关系的数据库，从形状和信息中获得引入磁体的Dy的分布。根据引入的Dy的分布计算磁体的引入表面（S8），并且计算磁体中的ΔHcJ的分布（S9）。对于不具有均匀矫顽力分布的磁体，计算的ΔHcJ分布用于计算J-H曲线（S11和S12），并且使用温度系数计算在规定温度（100℃）下的退磁因子（S13）。', 'DE602011036671', 1297094400, 'DE602011036671T2', 1491321600, 1491321600, NULL, 1491321600, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 66, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '889', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 39560, 39559, 39561, 11);
INSERT INTO `os_patent` VALUES (23155, 'RH拡散源およびそれを用いたR-T-B系焼結磁石の製造方法', 'RH扩散源及使用其的R-T-B基烧结磁体的制造方法', 'JP5747543B2', '【課題】R-T-B系焼結磁石体へのRH拡散の条件が変わっても拡散量が変動することなく安定してR-T-B系焼結磁石を製造する。\n\n【解決手段】焼結磁石の製造方法は、R-T-B系焼結磁石体を準備する工程と、ジルコニア、アルミナ、イットリア、窒化ケイ素、炭化ケイ素、窒化硼素若しくはこれらの混合物のセラミックスまたはMo、Nb、W、Taのいずれかの1種の金属若しくはこれらの合金のいずれかからなる基材に重希土類元素RH(DyおよびTbの少なくとも一方)を含む金属または合金を被覆したRH拡散源を準備する工程と、前記R-T-B系焼結磁石体および前記RH拡散源を処理室内に装入·配置する工程と、前記R-T-B系焼結磁石体および前記RH拡散源を700℃から1000℃に加熱するRH拡散工程とを包含する。\n\n【選択図】図1', '要解决的问题：即使RH扩散到R  -  T  -  B烧结磁体中的条件发生变化，也能稳定地生产R  -  T  -  B基烧结磁体，而扩散量没有波动。\n\n制造烧结磁体的方法包括制备RTB烧结磁体，氧化锆陶瓷，氧化铝，氧化钇，氮化硅，碳化硅，氮化硼或其混合物，Mo，Nb，W的步骤，Ta或这些金属中的任何一种的合金，或其与含有重稀土元素RH（Dy和Tb中的至少一种）的金属或合金的合金在工艺室中装载和设置RTB基烧结磁体和RH扩散源的步骤，将RTB基烧结磁体和RH扩散源从700℃加热到1000℃的RH扩散步骤，它包括。\n\n点域1', 'JP2011028779', 1297612800, 'JP5747543B2', 1436889600, 1346860800, NULL, 1432224000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 18, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 8, 0, 0, 0, 0, NULL, NULL, NULL, '池田 安希子', NULL, 'JP1996092735A | JP1999195515A | US20080286595A1 | US20110189498A1 | WO2007102391A1 | WO2010041416A1 | WO2011007758A1', NULL, NULL, 1, '\\20220510\\c6edc93362ad45639d157ca1538eb8d2.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39562, 39564, 39563, 2);
INSERT INTO `os_patent` VALUES (23156, '希土類焼結磁石とその製造方法', '稀土烧结磁体及其制造方法', 'JP5158222B2', '【課題】 磁石全体にわたって主相結晶粒の外殻部に重希土類元素RHを拡散させた希土類焼結磁石の製造方法を提供する。\n\n【解決手段】\n\n本発明によるR-Fe-B系希土類焼結磁石の製造方法では、まず、軽希土類元素RL(NdおよびPrの少なくとも1種)を主たる希土類元素Rとして含有するR2Fe14B型化合物結晶粒を主相として有するR-Fe-B系焼結磁石を用意する。次に、焼結磁石体の表面にRH(但し、RHは、Dy、Ho、Tbから選ばれる希土類元素の1種又は2種以上)と、RHMとなり融点を下げる金属M(但し、MはAl、Cu、Co、Fe、Agから選ばれる金属元素の1種または2種以上)とからなるRHM合金層を被覆する。この後、真空又はAr雰囲気中で800℃以上1000℃以下の熱処理を行い、表面から金属元素Mを焼結磁石の内部に拡散させ、また、表面から重希土類元素RHを希土類焼結磁石体の内部に拡散させる。\n\n【選択図】図1', '要解决的问题：提供一种生产稀土烧结磁体的方法，该方法使重稀土元素RH在整个磁体上扩散到主相晶粒的外壳部分中。解决方案：在生产R-Fe-B稀土烧结磁体的过程中，首先制备一种R-Fe-B烧结磁体，其主相由含有轻稀土元素RL的R2Fe14B复合晶粒组成（至少一个）然后，在其表面上的烧结磁体体涂覆有由RH组成的RHM合金层（其中RH是选自Dy，Ho中的一种或两种或更多种稀土元素）的Nd和Pr）作为主要稀土元素R.和金属M（其中M是选自Al，Cu，Co，Fe和Ag中的一种或两种或更多种金属元素），金属M形成RHM以引起熔点降低。此后，在真空或Ar气氛中在800至1000℃下进行热处理，以使金属元素M从表面扩散到烧结磁体的内部并使重稀土元素RH进入从表面扩散到稀土烧结磁体的内部。', 'JP2011048821', 1299427200, 'JP5158222B2', 1362499200, 1313596800, NULL, 1356019200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 2, 0, 0, 0, NULL, NULL, NULL, '2005119088', 'JP', 1113494400, 11, 11, NULL, NULL, 8, 0, 0, 0, 0, NULL, NULL, NULL, '高橋 克', NULL, 'JP1986185910A | JP1987192566A | JP2004296973A | JP2004304038A | JP2005175138A | JP2005209932A | JP2005285860A | JP2005294558A', NULL, NULL, 1, '\\20220510\\7e21681298b1470fb97215d2e9d4dfd8.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39189, 39191, 39190, 12);
INSERT INTO `os_patent` VALUES (23157, '表面改質されたR-Fe-B系焼結磁石およびその製造方法', '表面改性的R-Fe-B基烧结磁体及其制造方法', 'JP5786398B2', '(修正有)\n\n【課題】過酷条件下においても優れた耐食性を有するとともに、優れた磁気特性を有する表面改質されたR-Fe-B系焼結磁石およびその製造方法を提供する。\n\n【解決手段】表面改質されたR-Fe-B系焼結磁石は、25~40質量%の希土類元素:R、0.6~1.6質量%のB、0~1.0質量%のAl、Si、Ti、V、Cr、Mn、Ni、Cu、Zn、Ga,Zr、Nb、Mo、Ag、In、Sn、Hf、Ta、W、Pb、およびBiからなる群から選択される少なくとも1種の添加元素:M、残部は、磁石全体の0.01~2.5質量%がCoによって置換されたFe、および不可避不純物からなる組成を有するもので、表面改質された部分が少なくとも4層を有する改質層からなり、この改質層が、磁石の内側から順に、R、Fe、Co、Bおよび酸素を含む主層、Co濃化層、R濃化層、最表層を少なくとも有する。\n\n【選択図】図2', '（经修改）\n\n要解决的问题：提供一种表面改性的R-Fe-B基烧结磁体，即使在苛刻的条件下也具有优异的耐腐蚀性和优异的磁性能，以及制备该烧结磁体的方法。\n\n表面改性的R-Fe-B基烧结磁体含有25-40质量％的稀土元素：R，0.6-1.6质量％的B，0-1.0质量％的Al，Si，Ti ，选自V，Cr，Mn，Ni，Cu，Zn，Ga，Zr，Nb，Mo，Ag，In，Sn，Hf，Ta，W，Pb中的至少一种添加元素， ：M，余量为Fe，其中整个磁体的0.01至2.5质量％被Co和不可避免的杂质代替，并且表面改性部分由具有至少四层的改性层构成，重整层至少具有包含R，Fe，Co，B和氧的主层，Co富集层，R富集层和从磁体内部依次的最外层。\n\n.The', 'JP2011066054', 1300896000, 'JP5786398B2', 1443542400, 1350835200, NULL, 1438876800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 13, 0, 0, 0, 0, NULL, NULL, NULL, '井上 健一', NULL, 'JP1982110616A | JP2002057052A | JP2003031409A | JP2006156853A | JP2006210864A | JP2007103523A | JP2007207936A | JP2010232357A | JP2012142400A | US20020033205A1 | US20100252145A1 | WO2009041639A1', NULL, NULL, 1, '\\20220510\\82c70bc647ff4857a14871739814d062.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39565, 39567, 39566, 2);
INSERT INTO `os_patent` VALUES (23158, '表面改質されたR-Fe-B系焼結磁石の製造方法', '表面改性R  -  Fe  -  B基烧结磁体的制备方法', 'JP5914974B2', '【課題】 優れた耐食性を有するとともに、優れた磁気特性を有する表面改質されたR-Fe-B系焼結磁石の製造方法を提供すること。\n\n【解決手段】 酸素分圧が1×103Pa〜1×105Paで水蒸気分圧が1000Pa未満であり、かつ、酸素分圧と水蒸気分圧の比率(酸素分圧/水蒸気分圧)が1〜20000(但し1を除く)の雰囲気を、処理室内の容積1m3あたりの雰囲気ガスの導入を酸素流量として0.028m3/分以上、かつ、全体流量として3m3/分以下の条件で行うことで処理室内が陽圧状態になるようにして形成し、酸素含有量が0.1質量%以下のR-Fe-B系焼結磁石に対し、230℃〜260℃で熱処理を行うことを特徴とする。\n\n【選択図】図2', '要解决的问题：提供一种生产表面改性的R-Fe-B基烧结磁体的方法，该烧结磁体具有优异的耐腐蚀性和优异的磁性。\n\n解决方案：在1×10  3  Pa至1×10  5  Pa的氧气分压和氧气分压和水蒸气下，水蒸气分压小于1000 Pa通过在处理室中每1m  3 引入气氛气体，引入分压比（氧分压/水蒸气分压）为1至20000（除1之外）的气氛作为氧气流速。通过在0.028m  3  / min或更高且3m    3  / min或更低的条件下进行总流速， ，并且在230℃至260℃下对氧含量为0.1质量％或更低的R-Fe-B基烧结磁体进行热处理。\n\n.The', 'JP2011067522', 1300982400, 'JP5914974B2', 1462896000, 1350835200, NULL, 1460649600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 15, 0, 0, 0, 0, NULL, NULL, NULL, '井上 健一', NULL, 'JP1995297062A | JP1996316076A | JP2002057052A | JP2006156853A | JP2006210864A | JP2007103523A | JP2007207936A | JP2010232346A | JP2010232357A | JP2012142400A | JP2012204486A | US20020033205A1 | US6383297B1 | WO2009041639A1', NULL, NULL, 1, '\\20220510\\c6a7904669e942199c30ee7c25e5333f.png', NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 39568, 39570, 39569, 2);
INSERT INTO `os_patent` VALUES (23159, '발명의 명칭 슬러리의 재생방법 및 희토류계 소결자석의 제조방법 및 슬러리의 재생장치', '发明名称浆料回收方法和稀土烧结磁铁的制造方法以及浆料回收装置', 'KR101790811B1', '희토류계 소결자석의 습식 성형 공정에서 생긴 성형체 불량품을 재이용하기 위한 공정을 줄일 수 있으며, 함유산소량이 적은 고성능의 희토류계 소결자석의 제조방법으로서 적합한 희토류계 소결자석의 제조방법 및 그 제조방법에 이용되는 슬러리의 재생방법 및 슬러리의 재생장치를 제공한다. 희토류계 소결자석용 합금 분말과 광물유 및 합성유로부터 선택되는 적어도 1종으로 이루어지는 슬러리를 자계 중에서 습식 성형한 성형체를, 광물유및 합성유로부터 선택되는 적어도 1종 중에서 해쇄하여 슬러리로 재생하는 해쇄 공정을 포함하고 있다.', '用于稀土烧结磁体生产方法的浆料的再生方法，该方法可以减少稀土烧结磁体的湿气塑性工艺中产生的成型产品劣质产品的再利用过程，适合作为稀土生产方法本发明提供一种氧含量较低的高效烧结磁铁及其制造方法和浆料的再生剂。在由磁场中的至少一种选自矿物油和合成油中的至少一种中，将由稀土烧结磁体的合金粉末和矿物油和合成油中的至少一种组成的浆料湿式成型的成型产品进行粉碎。并且包括作为浆料再生的破碎过程。', 'KR1020127027471', 1301241600, 'KR101790811B1', 1508947200, 1361721600, NULL, 1508428800, '韩国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 31, 1, 0, 0, 0, NULL, NULL, NULL, '2010082041', 'JP', 1269964800, 14, 14, NULL, NULL, 3, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP1998097937A | JP1998125521A | JP2004207578A', NULL, NULL, 1, '\\20220510\\d56116e4a74044d29ee4f3d3d442b542.png', NULL, NULL, 1, NULL, NULL, 17, NULL, NULL, NULL, 39571, 39573, 39572, 15);
INSERT INTO `os_patent` VALUES (23160, 'スラリーの再生方法、希土類系焼結磁石の製造方法およびスラリーの再生装置', '再生浆料的方法，制造稀土蚀刻磁铁的方法，', 'JP5682623B2', '希土類系焼結磁石の湿式成形工程において生じた成形体不良品を再利用するための工程を減らすことができ、含有酸素量が少ない高性能の希土類系焼結磁石の製造方法として好適な希土類系焼結磁石の製造方法ならびにその製造方法に用いられるスラリーの再生方法及びスラリーの再生装置を提供する。\n\n 希土類系焼結磁石用合金粉末と鉱物油および/または合成油とからなるスラリーを磁界中で湿式成形した成形体を、鉱物油および/または合成油中において解砕してスラリーに再生するする解砕工程を含んでいる。\n\n【選択図】 図1', '一种稀土化系统,作为制造具有高性能稀土烧结磁体的高性能稀土烧结磁体的方法,具有低含氧量,以及具有低含氧量的高性能稀土烧结磁体含量和具有少量氧气的高性能稀土烧结磁体,高性能稀土烧结磁体可以减少。烧结磁体的处理方法及再现制造方法中使用的浆料和浆料的方法再现设备。\n\n湿模制品的溶液,其包含用于稀土基烧结磁体的合金粉末和/或磁场中的合成油和/或合成油,以矿物油和/或合成油粉碎,以再生于浆料。它含有破碎步骤。\n\n图1', 'JP2012509450', 1301241600, 'JP5682623B2', 1426003200, 1373212800, NULL, 1421942400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 29, 1, 0, 0, 0, NULL, NULL, NULL, '2010082041', 'JP', 1269964800, 14, 14, NULL, NULL, 9, 0, 0, 0, 0, NULL, NULL, NULL, '五貫 昭一', NULL, 'JP1988056596A | JP1998097937A | JP2001017810A | JP2001287163A | JP2004207578A | JP2006265610A | WO2009104632A1', NULL, NULL, 1, '\\20220510\\9317bfd3b9b94e05aedd6ffd4fc964a0.png', NULL, NULL, 1, NULL, NULL, 17, NULL, NULL, NULL, 39571, 39573, 39572, 15);
INSERT INTO `os_patent` VALUES (23161, 'Slurry recycling method, producing method of rare earth sintered magnet and slurry recycling apparatus', '浆料回收方法、稀土烧结磁体的生产方法及浆料回收装置', 'US9358614B2', 'The present invention provides a producing method of a rare earth sintered magnet which is suitable as a producing method of a high performance rare earth sintered magnet which can reduce the number of steps for reusing defective molded bodies generated in a wet molding step of the rare earth sintered magnet, and which has a small content amount of oxygen. The invention also provides a slurry recycling method used for the producing method, and a slurry recycling apparatus. Each of the methods includes a crushing step of crushing, in mineral oil and/or synthetic fluid, a molded body in which slurry formed from alloy powder for a rare earth sintered magnet and mineral oil and/or synthetic fluid is wet molded in magnetic field, and recycling the crushed molded body into slurry.', '本发明提供一种稀土类烧结磁铁的制造方法，其适合作为高性能稀土类烧结磁铁的制造方法，能够减少再利用稀土的湿式成型工序中产生的不良成型体的工序数烧结磁铁，氧含量少。本发明还提供了一种用于该生产方法的浆料回收方法，以及一种浆料回收设备。每种方法包括在矿物油和/或合成流体中粉碎成型体的压碎步骤，其中由稀土烧结磁体和矿物油和/或合成流体的合金粉末形成的浆料在磁场中湿成型，将破碎的成型体再循环成浆料。', 'US13/583967', 1301241600, 'US9358614B2', 1465228800, 1357747200, NULL, 1465228800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 32, 1, 0, 0, 0, NULL, NULL, NULL, '2010082041', 'JP', 1269964800, 14, 14, NULL, NULL, 14, 2, 0, 0, 5, NULL, '875', NULL, 'ROSENBAUM, MARK', NULL, 'CN101447331A | CN1067826A | CN86105182A | JP1998097937A | JP1998125521A | JP2001287163A | JP2003051418A | JP2004207578A | US20030006327A1 | US5312052A | US7159809B1 | US8770503B2', 'US20140239098A1 | US9463509B2', 'First Office Action issued Jun. 30, 2014 by The State Intellectual Property Office of the People\'s Republic of China in counterpart application No. 201180016417.1. cited by applicant | International Search Report for International Application No. PCT/JP2011/057540 dated Jun. 14, 2011. cited by applicant | Office Action dated Sep. 30, 2014 corresponding to Japanese Patent Application No. 2012-509450. cited by applicant | Office action in counterpart Chinese Application No. 201180016417.1, mailed Feb. 16, 2016. cited by applicant. | Third Office Action issued on Nov. 4, 2015 to the corresponding Chinese patent application No. 201180016417.1. cited by applicant', 1, '\\20220510\\8f17747e3379464e9420fd6685f18e0f.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39571, 39573, 39572, 15);
INSERT INTO `os_patent` VALUES (23162, 'Method for recycling slurry, method for manufacturing rare-earth based sintered magnet, and apparatus for recycling slurry', '浆料回收方法、稀土类烧结磁铁的制造方法及浆料回收装置', 'EP2555211B1', 'The present invention provides a producing method of a rare earth sintered magnet which is suitable as a producing method of a high performance rare earth sintered magnet which can reduce the number of steps for reusing defective molded bodies generated in a wet molding step of the rare earth sintered magnet, and which has a small content amount of oxygen. The invention also provides a slurry recycling method used for the producing method, and a slurry recycling apparatus. Each of the methods includes a crushing step of crushing, in mineral oil and/or synthetic fluid, a molded body in which slurry formed from alloy powder for a rare earth sintered magnet and mineral oil and/or synthetic fluid is wet molded in magnetic field, and recycling the crushed molded body into slurry.', '本发明提供一种稀土烧结磁体的制造方法，该稀土烧结磁体的制造方法适合作为高性能稀土烧结磁体的制造方法，该高性能稀土烧结磁体的制造方法可以减少重复利用在稀土的湿法成型步骤中产生的缺陷成型体的步骤数。含氧量少的烧结磁铁。本发明还提供一种用于该制造方法的浆料再循环方法以及一种浆料再循环设备。每种方法都包括在矿物油和/或合成流体中压碎成型体的压碎步骤，其中将由用于稀土烧结磁体的合金粉末和矿物油和/或合成流体形成的浆料在磁场中湿法成型。 ，并将粉碎的成型体回收成浆料。', 'EP2011765478', 1301241600, 'EP2555211B1', 1574784000, 1360080000, NULL, 1574784000, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 39, 1, 0, 0, 0, NULL, NULL, NULL, '2010082041', 'JP', 1269964800, 14, 14, NULL, NULL, 12, 0, 0, 0, 0, NULL, '874', NULL, NULL, NULL, 'CN1067826A | JP1998097937A | JP1998125521A | JP2003051418A | JP2004207578A | JP2006265610A | KR1020010111750A | US20030006327A1 | WO1992009380A1 | WO2009104632A1', NULL, NULL, 1, '\\20220510\\abb3382c808e4e7c9865a7fb45d4b0a8.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, '有效:DE | 失效:RS,NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,SE,SI,MC,SK,SM,GB,IE,EE,CH,IS,IT,GR,AL,ES,AT,CZ,PL,RO,LI,NL | 未确认:HU,MK,MT,CY,TR', 39571, 39573, 39572, 15);
INSERT INTO `os_patent` VALUES (23163, 'VERFAHREN FÜR RECYCLING EINES SCHLAMMS, VERFAHREN ZUR HERSTELLUNG EINES SINTERMAGNETEN AUF SELTENERDBASIS UND VORRICHTUNG FÜR RECYCLING EINES SCHLAMMS', '用于再循环污泥的方法,生产稀土烧结磁体的方法和用于再循环污泥的装置', 'DE602011063656T2', 'Disclosed is a method for manufacturing rare-earth based sintered magnet which can eliminate the step of reclaiming a molded defective of rare-earth based sintered magnet resulting from wet molding thereof and which is preferred as a method of preparing a high-performance rare-earth based sintered magnet that has a reduced oxygen content. Also disclosed is a method and apparatus for recycling slurry which are employed for the manufacturing method. The method for recycling slurry includes a step of disintegrating and crushing a molded piece in mineral oil and/or synthetic oil to provide the resultant as recycled slurry, the molded piece having been produced in a magnetic field by wet-molding a slurry made of alloy powder for rare-earth based sintered magnet and mineral oil and/or synthetic oil.', '本发明公开了一种稀土基烧结磁体的制造方法，该方法可以消除回收由其湿法成型得到的稀土基烧结磁体的模塑缺陷的步骤，并且优选作为制备高性能稀土的方法。基于氧化物含量降低的烧结磁体。还公开了一种用于再循环浆料的方法和设备，其用于制造方法。回收浆料的方法包括将矿物油和/或合成油中的模塑件破碎和粉碎以提供作为再循环浆料的步骤，该模塑件通过湿法模塑由合金制成的浆料在磁场中生产。用于稀土基烧结磁体和矿物油和/或合成油的粉末。', 'DE602011063656', 1301241600, 'DE602011063656T2', 1574784000, 1574784000, NULL, 1574784000, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 61, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '855', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 19, NULL, NULL, NULL, 39574, 39573, 39575, 15);
INSERT INTO `os_patent` VALUES (23164, 'バルク磁石およびその製造方法', '块状磁铁及其制造方法', 'JP5914977B2', '【課題】希土類元素の組成比率がR2Fe14Bの化学量論組成より少ない磁石粉末を用いて比較的低い熱間成形圧力で残留磁束密度Brの高い等方性磁石を製造する。\n\n【解決手段】本発明のバルク磁石の製造方法では、まず、希土類元素R(RはLaおよびCeを実質的に含まない少なくとも1種の希土類元素)の含有量が2原子%以上12原子%以下の組成であるR-Fe-B系急冷合金磁石粉末の粒子と、希土類元素R’(R’は、Nd、Pr、DyおよびTbからなる群から選択された少なくとも1種の元素)を含有する希土類含有粉末の粒子とが混合した混合粉末であって、前記希土類含有粉末の割合が全体の1質量%以上30質量%以下の範囲にある混合粉末を用意する。この混合粉末を加圧しながら500℃以上850℃以下の温度に加熱して成形し、バルク磁石を形成する。\n\n【選択図】図7', '要解决的问题：通过使用稀土元素组成比较少的磁粉，制造具有较高剩余磁通密度B  r 的各向同性磁体，热成型压力较低比化学计量组成的R  2  Fe  14  B.解决方案：在制造块状磁体的方法中，首先，混合粉末在R-Fe-B系快速冷却合金磁粉的成分中稀土元素R（R是至少一种稀土，实际上不包括La和Ce）的含量为2原子％以上且12原子含有稀土元素R\'的含稀土粉末的颗粒与R\'（R\'是选自Nd，Pr，Dy和Tb中的至少一种元素）的含量相同或更低，并且其中制备含稀土的粉末，其含量为1质量％以上且30质量％以下。通过在将混合粉末加压至500℃或更高且850℃或更低的温度的同时加压混合粉末来模制混合粉末，并形成块状磁体。', 'JP2011074410', 1301414400, 'JP5914977B2', 1462896000, 1351094400, NULL, 1460649600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 20, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 16, 0, 0, 0, 0, NULL, NULL, NULL, '井上 健一', NULL, 'JP1989101606A | JP1989196104A | JP1990288305A | JP1991071601A | JP1996269643A | JP1997129424A | JP1997275004A | JP2004014906A | JP2009049378A | JP2010263172A | WO2006064794A1', NULL, NULL, 1, '\\20220510\\9b0cfc70630144c8b7fa20155d6e879a.png', NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 39576, 39578, 39577, 2);
INSERT INTO `os_patent` VALUES (23165, '蒸着拡散処理用ケース及びR-T-B系焼結磁石の製造方法', '用于沉积扩散处理的情况和生产R-T-B烧结磁体的方法', 'JP5742012B2', '【課題】R-T-B系焼結磁石と支持体との溶着の発生を減少させる蒸着拡散処理用ケース及びその蒸着拡散処置用ケースを用いたR-T-B系焼結磁石の製造方法を提供すること。\n\n【解決手段】棒状部材を用いた支持体を介して、RH供給源とR-T-B系焼結磁石を上下方向へ交互に多段配置する。これにより、従来用いられている格子状の網などの支持体とくらべて、R-T-B系焼結磁石と支持体との溶着の発生を大幅に低減した蒸着拡散処理用ケース及びそのケースを用いたR-T-B系焼結磁石の製造方法を提供することができる。\n\n【選択図】図1', '要解决的问题提供一种气相沉积扩散处理的情况，其减少R-T-B烧结磁体与载体之间的焊接的发生，以及使用该气相沉积扩散处理的壳体制造R-T-B基烧结磁体的方法。\n\n解决方案：RH供应源和R-T-B基烧结磁体通过使用杆状构件的支撑件在垂直方向上以多级交替布置。因此，与常规使用的网状网等支撑体和RTB相比，可以提供一种气相沉积扩散处理的情况，其中RTB基烧结磁体和支撑体之间的焊接的发生大大减少。可以提供基于烧结的磁体。\n\n点域1', 'JP2011074051', 1301414400, 'JP5742012B2', 1435680000, 1351094400, NULL, 1431619200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 3, 0, 0, 0, 0, NULL, NULL, NULL, '池田 安希子', NULL, 'WO2007102391A1 | WO2009057592A1 | WO2009107397A1', NULL, NULL, 1, '\\20220510\\a589666e79684798a5bb3001e810ae08.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39579, 39581, 39580, 2);
INSERT INTO `os_patent` VALUES (23166, '永久磁石薄膜用スパッタリングターゲット及びその製造方法', '永磁体薄膜的溅射靶及其制造方法', 'JP5769059B2', '【課題】Nd-Fe-B系永久磁石薄膜などの永久磁石薄膜の磁気特性を向上させることができる、永久磁石薄膜用スパッタリングターゲット及びその製造方法の提供。\n\n【解決手段】原子比率による組成式が、RxT100-x-yMy(Rは希土類元素のうち少なくとも一種であってNd及び/又はPrを必ず含み、Tは遷移元素のうち少なくとも一種であってFeを必ず含み、MはB又はBとCであって50原子%≦B/Mを満足する)で表され、x、yが、17≦x≦20、7≦y≦10を満足する組成からなり、酸素含有量が1500ppm以下の焼結体である。\n\n【選択図】図2', '要解决的问题：提供一种能够改善永磁体薄膜的磁性能的永磁体薄膜的溅射靶，例如Nd-Fe-B基永磁体薄膜及其制造方法。\n\n解决方案：原子比的组成式为R  x  T  100-xy  M  y （R是稀土元素中的至少一种不可避免地含有Nd和/或Pr，T是至少一种过渡元素，必须含有Fe，M是B或B，C满足50原子％≤B/ M）并且，x和y满足17≤x≤20且7≤y≤10，并且是氧含量为1500ppm或更低的氧烧结体。\n\n.The', 'JP2011074052', 1301414400, 'JP5769059B2', 1440518400, 1351094400, NULL, 1435852800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 7, 0, 0, 0, 7, NULL, NULL, NULL, '村岡 一磨', NULL, 'JP1988084005A | JP1998251847A | JP1999214219A | JP2000348919A | US6071323A | WO2008032667A1', NULL, 'A.Nakanishi、M.Ueda、T.Okuda、N.Mizutani、J.Nishiyama、M.Motokawa、Zhongjie Wang、N.Adachi、H.Ohsato、「Compositional and structural study of RF-Sputtered Nd-Fe-B thin film」、Journal of Magnetism and Magnetic Materials、196-197、(1999)、p.295-296 | Koji Yamasawa、Xiaaxi Liu、and Akimitsu Morisako、「Nd-Fe-B films with perpendicular magnetic anisotropy」、Journal of Applied Physics、99、08N302、(2006) | Lileev, A.S., et al.,\"Properties of hard magnetic Nd-Fe-B films versus different sputtering conditions\",Journal of Magnetism and Magnetic Materials,2002年 4月,Vol. 242-245, No. PART II,pp. 1300-1303 | Oswald, S., et al.,\"XPS and AES investigations of hard magnetic Nd-Fe-B films\",Applied Surface Science,2005年 9月30日,Vol. 252, No. 1,pp. 218-222 | R.Tokumaru、S.Tamano、S.Goto、S.Madeswaran、K.Tokiwa and T.Watanabe、「Effect of annealing on magnetic properties of Nd-Fe-B thin films prepared by ECR ion beam sputtering method」、Journal of Physics:Conference Series、191、(2009)、012021 | T.Sato、H.Kato、T.Shima、Y.K.Takahashi、K.Hono、「Effect of film morphology on the magnetic properties for Nd-Fe-B thin films」、Journal of Magnetism and Magnetic Materials、vol.323、(2011)、p.162-165 | 山下慎次、山崎二郎、池田満昭、岩渕憲昭、「Nd-Fe-Bスパッタリング異方性薄膜磁石」、日本応用磁気学会誌、Vol.15、No.2、(1991)、p.241-244', 1, '\\20220510\\3f672b01d85641d2b52db33c9aa173d7.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39582, 39584, 39583, 2);
INSERT INTO `os_patent` VALUES (23167, 'R-T-B系焼結磁石の製造方法及び製造装置', '用于制造R-T-B烧结磁体的方法和设备', 'JP5887705B2', '【課題】焼結磁石体の表層領域においても重希土類元素RHが主相粒内部に拡散することを抑制し、Brを実質的に低下させずにHcJを向上させたR-T-B系焼結磁石を製造する方法及びそれに用いる製造装置を提供する。\n\n【解決手段】本発明のR-T-B系焼結磁石の製造装置は、少なくとも1つの開口部8を有し、複数個のR-T-B系焼結磁石9が挿入される処理容器3と、処理容器3の外部に配置されたRH供給源5および処理容器3を加熱する加熱装置7、17と、RH供給源5が複数個のR-T-B系焼結磁石9の一部に対向し、かつ離間した状態で、RH供給源5と複数個のR-T-B系焼結磁石9との配置関係を変化させるように複数個のR-T-B系焼結磁石9を移動させる駆動装置4とを備える。\n\n【選択図】図1', '要解决的问题：在烧结磁体的表层区域中也抑制重稀土元素RH扩散到主相晶粒中，并且基本上不会降低B  r 提供一种制造具有改进的cJ 的RTB基烧结磁体的方法和用于该方法的制造设备。\n\n根据本发明的用于制造RTB基烧结磁体的设备包括处理容器3，处理容器3具有至少一个开口8并且多个RTB烧结磁体9插入其中，加热装置7和17用于在RH供应源5与多个RTB基烧结磁体9的一部分相对并分离的状态下加热RH供应源5和设置在RH供应源5和RH供应源5中的处理容器3，以及用于移动多个RTB基烧结磁体（9）的驱动装置（4），以改变供应源（5）和多个RTB基烧结磁体（9）之间的布置关系。\n\n点域1', 'JP2011078647', 1301500800, 'JP5887705B2', 1458057600, 1351699200, NULL, 1456416000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 31, 4, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 12, 0, 0, 0, 0, NULL, NULL, NULL, '井上 健一', NULL, 'JP1994122966A | JP2001335921A | JP2004296973A | JP2005286210A | JP2009194262A | US20010036508A1 | US20080286595A1 | US20090020193A1 | US20100037826A1 | WO2006112403A1 | WO2007102391A1 | WO2008032666A1', NULL, NULL, 1, '\\20220510\\67f67f2c1dfa4ae6a74291ef84aaa5e4.png', NULL, NULL, 1, NULL, NULL, 18, NULL, NULL, NULL, 39585, 39587, 39586, 3);
INSERT INTO `os_patent` VALUES (23168, 'R-Fe-B系希土類焼結磁石およびその製造方法', 'R-Fe-B系稀土烧结磁铁及其制造方法', 'JP5206834B2', '(修正有)\n\n【課題】少ない量の重希土類元素RHを効率よく活用し、磁石が比較的厚くとも、磁石全体にわたって主相結晶粒の外郭部に重希土類元素RHを拡散させたR-Fe-B系希土類焼結磁石を提供する。\n\n【解決手段】まず軽希土類元素RL(NdおよびPrの少なくとも1種)を主たる希土類元素Rとして含有するR2Fe14B型化合物結晶粒を主相として有するR-Fe-B系希土類焼結磁石体を用意する。次に、焼結磁石体の表面に金属元素M(MはAl、Ga、In、Sn、Pb、Bi、Zn、およびAgからなる群から選択された少なくとも1種)を含有するM層を堆積した後、重希土類元素RH(Dy、Ho、およびTbからなる群から選択された少なくとも1種)を含有するRH層をM層上に堆積する。この後、焼結磁石体を加熱し、表面から金属元素Mを焼結磁石の内部に拡散させ、また、表面から重希土類元素RHを焼結磁石体の内部に拡散させる。\n\n【選択図】図1', '要解决的问题：使用少量重稀土元素RH有效地提供基于R-Fe-B的稀土烧结磁体，并将其分散到整个主相晶粒的轮廓部分中。磁铁即使磁铁比较厚。溶液：以R-Fe-B为基础的稀土烧结磁体，以含有轻稀土元素RL（Nd和Pr中的至少一种）为主要成分的R2Fe14B型复合晶粒作为主相首先制备稀土元素R.然后，在M上沉积含有金属元素M（选自Al，Ga，In，Sn，Pb，Bi，Zn和Ag中的至少一种）的层M.在烧结磁体的表面和含有重稀土元素RH（选自Dy，Ho和Tb中的至少一种）的RH层沉积在层M上。然后将烧结磁体加热到金属元素M从表面扩散到烧结磁体中，并且还将重稀土元素RH从表面扩散到烧结磁体中。', 'JP2011094996', 1303315200, 'JP5206834B2', 1370966400, 1320336000, NULL, 1362067200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 3, 0, 0, 0, NULL, NULL, NULL, '2006022997', 'JP', 1138636800, 17, 17, NULL, NULL, 10, 0, 0, 0, 0, NULL, NULL, NULL, '高橋 克', NULL, 'JP1987188745A | JP1987192566A | JP1989117303A | JP2004296973A | JP2004304038A | JP2005011973A | JP2005285859A | JP2005294558A | WO2006100968A1 | WO2006112403A1', NULL, NULL, 1, '\\20220510\\c3a5dff87cb644db8f797fc50512dc5b.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39224, 39226, 39225, 18);
INSERT INTO `os_patent` VALUES (23169, 'Applicator for grain boundary diffusion process', '晶界扩散工艺涂布机', 'US9884368B2', 'An applicator for grain boundary diffusion process that uniformly applies an RH powder without excess or deficiency onto a predetermined surface of a sintered compact with a given thickness and in a given pattern, the applicator being automated and performed on many sintered compacts during the production of a NdFeB system sintered magnet. The applicator includes a work loader and a print head, located above the work loader. The work loader includes: a laterally movable base; a lift being vertically movable with respect to the base; a frame that is attachable to and detachable from the lift; a tray that is attachable to and detachable from the frame; a supporter provided on the upper surface of the tray; and a vertically movable magnetic clamp. The print head includes: a screen having a passage section; and a movable squeegee and a backward scraper that maintains contact with the upper screen surface.', '一种用于晶界扩散过程的涂敷器，其将RH粉末均匀地施加到具有给定厚度和给定图案的烧结体的预定表面上而没有过量或不足，该涂敷器在生产过程中自动化并在许多烧结压块上进行。钕铁硼系烧结磁铁。涂抹器包括工作装载器和位于工作装载器上方的打印头。工作装载机包括：可横向移动的底座;升降机可相对于基座垂直移动;可安装在升降机上并可从升降机拆卸的框架;托盘，可安装到框架上并可从框架上拆卸下来;支架设置在托盘的上表面上;和可垂直移动的磁性夹具。打印头包括：具有通道部分的屏幕;以及可移动的刮板和后刮板，其保持与上筛表面的接触。', 'US13/643215', 1303747200, 'US9884368B2', 1517846400, 1360771200, NULL, 1517846400, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 2, 0, 0, 0, NULL, NULL, NULL, '2010101787', 'JP', 1272297600, 13, 13, NULL, NULL, 33, 0, 0, 0, 4, NULL, '880', NULL, 'ESLAMI, TABASSOM TADAYYON', NULL, 'CN101076870A | CN101145424A | CN101479109A | CN1898757A | EP1843360A1 | EP2033781A1 | JP1988252405A | JP2000025319A | JP2004291366A | JP2006019521A | JP2007021394A | JP2008061333A | JP2009170541A | JP2009188174A | JP2010098115A | KR1020070074593A | US20020157733A1 | US20030029570A1 | US20040265493A1 | US20080006345A1 | US20080054738A1 | US20080286595A1 | US20090297699A1 | US20100007232A1 | US20100109468A1 | US20120055355A1 | US20120114844A1 | US5682670A | WO2006004848A1 | WO2006043348A1 | WO2006064848A1 | WO2008123251A1', NULL, 'Apr. 1, 2014 Office Action issued in Chinese Patent Application No. 201180020502.5 (with translation). cited by applicant | International Search Report issued in International Application No. PCT/JP2011/060169 dated Aug. 9, 2011 (with translation). cited by applicant | Mar. 8, 2017 Office Action issued in European Patent Application No. 11775004.2. cited by applicant. | May 25, 2016 Search Report issued in European Patent Application No. 11775004.2. cited by applicant', 1, '\\20220510\\2ab46a45fe0a4f40a6dc073060ced32c.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39501, 39503, 39502, 14);
INSERT INTO `os_patent` VALUES (23170, 'Coating apparatus for grain-boundary diffusion treatment', '晶界扩散处理用涂布装置', 'EP2565885B1', 'The present invention aims at providing an applicator for grain boundary diffusion process capable of, when performing a grain boundary diffusion process in the production of a NdFeB system sintered magnet, uniformly applying an RH powder without excess or deficiency onto a predetermined surface of a sintered compact with a given thickness and in a given pattern, the applicator being easily automated and being capable of performing an application operation to many sintered compacts. The applicator for grain boundary diffusion process according to the present invention is composed of a work loader 10 and a print head 20, which is provided above the work loader 10. The work loader 10 includes: a base 11 which can be laterally moved; a lift 12 which can be vertically moved with respect to the base 11; a frame 13 which is placed so as to be attachable to and detachable from the lift 12; a tray 14 which is placed so as to be attachable to and detachable from the frame 13; a supporter 15 which is provided on the upper surface of the tray 14; and a magnetic clamp 16 which is vertically movable. The print head 20 includes: a screen 21 in which a passage section 211 is provided; and a squeegee 22 and a backward scraper 23 which are movable while maintaining contact with the upper surface of the screen 21.', '本发明的目的在于提供一种晶界扩散处理用涂布器，其能够在NdFeB系烧结磁铁的制造中进行晶界扩散处理时，将RH粉末均匀地涂布在烧结体的规定面上而不会过剩或不足。具有给定厚度和给定图案的涂敷器易于自动化并且能够对许多烧结压块进行涂敷操作。根据本发明的用于晶界扩散处理的涂敷器由工件装载器10和设置在工件装载器10上方的打印头20组成。工件装载器10包括：可横向移动的底座11;升降机12可相对于基座11垂直移动;框架13，其设置成可安装在升降机12上并可从升降机12上拆下;托盘14，其设置成可安装到框架13上并且可从框架13拆卸;支撑件15设置在托盘14的上表面上;磁性夹具16可垂直移动。打印头20包括：屏幕21，其中设置有通道部分211;刮板22和后刮板23可在保持与屏幕21的上表面接触的同时移动。', 'EP2011775004', 1303747200, 'EP2565885B1', 1526400000, 1362499200, NULL, 1526400000, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 16, 2, 0, 0, 0, NULL, NULL, NULL, '2010101787', 'JP', 1272297600, 13, 13, NULL, NULL, 13, 0, 0, 0, 0, NULL, '876', NULL, NULL, NULL, 'EP2033781A1 | JP1988252405A | JP2000025319A | JP2004291366A | JP2006019521A | JP2008061333A | JP2009170541A | JP2010098115A | US20080054738A1 | US20090297699A1 | US20100007232A1 | WO2006043348A1 | WO2006064848A1', NULL, NULL, 1, '\\20220510\\532c9299042d4fcca8971e402480c748.png', NULL, NULL, 1, NULL, NULL, 14, NULL, NULL, '失效:RS,NO,DE,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,HU,SE,SI,MC,SK,SM,GB,IE,EE,CH,MT,IS,IT,GR,AL,ES,AT,CY,CZ,PL,RO,LI,TR,NL | 未确认:MK', 39501, 39503, 39502, 14);
INSERT INTO `os_patent` VALUES (23171, 'R-T-B系焼結磁石の製造方法', 'R-T-B基烧结磁体的制备方法', 'JP5871172B2', '【課題】R-T-B系焼結磁石と支持体との溶着の発生を減少させるとともに、RH供給源からR-T-B系焼結磁石体へ重希土類元素RHの供給を効率よくすることができる、R-T-B系焼結磁石の製造方法を提供すること。\n\n【解決手段】RH供給源とR-T-B系焼結磁石体との間に特定形状のスペーサを介在させて上下方向に多段配置する。これにより、従来用いられている網などの支持体と比べて、R-T-B系焼結磁石との溶着の発生を大幅に減少させることができる。また、RH供給源やR-T-B系焼結磁石体との接触面積が小さいため、RH供給源からR-T-B系焼結磁石体へ重希土類元素RHの供給を効率よくすることができ、重希土類元素RHの歩留まりを向上させることができる。\n\n【選択図】図1', '要解决的问题：提供一种制造RTB基烧结磁体的方法，该方法可以减少RTB基烧结磁体和支撑体之间的沉积，并且还实现从RH供应源有效供应重稀土元素RH基于RTB的烧结磁体。解决方案：RH供应源和RTB基烧结磁体的垂直多级布置通过分别在其间插入具有特定形状的间隔件而获得。与使用常规使用的支撑体（例如网）相比，这实现了R-T-B基烧结磁体和支撑体之间的沉积发生的显着减少。另外，RH供应源和RTB基烧结磁体之间的小接触区域允许从RH供应源到RTB基烧结磁体的有效供应重稀土元素RH，从而提高重稀土的产量。地球元素RH。', 'JP2011101001', 1303920000, 'JP5871172B2', 1456761600, 1354118400, NULL, 1453392000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, '五貫 昭一', NULL, 'JP1990252223A | JP2009130279A | JP2009135393A | WO2007102391A1', NULL, NULL, 1, '\\20220510\\9a319097abe44939b9cbf48b61e06e62.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39588, 39590, 39589, 2);
INSERT INTO `os_patent` VALUES (23172, 'R-T-B系焼結磁石の製造方法', 'R-T-B基烧结磁体的制备方法', 'JP5874951B2', '(修正有)\n\n【課題】R-T-B系焼結磁石内部に重希土類元素RHが効率よく拡散され、所定の磁気特性を得る磁石の製造方法を提供する。\n\n【解決手段】R-T-B系焼結磁石の製造方法は、R-T-B系焼結磁石素材を準備する工程と、重希土類元素RH(RHはDyおよびTbの少なくとも一種を含む)と40質量%以上95質量%以下のFeとからなるRH-Fe合金と、軽希土類元素RL(Nd、Pr、Ce、Laの少なくとも一種を含む)を含むRL金属と、からなり、総希土類量が65質量%以上、軽希土類元素RLが20質量%以上70質量%以下、重希土類元素RHが50質量%以下、である粉末状の拡散材を準備する工程と、前記R-T-B系焼結磁石素材に対し、前記拡散材を前記R-T-B系焼結磁石素材の表面に存在させた状態で、800℃以上1000℃以下の温度で真空または不活性ガス中においてRH拡散処理する工程と、を包含する。\n\n【選択図】図1', '（经修改）\n\n重稀土类元素RH内被有效地扩散基于R-T-B系烧结磁铁是提供一种制造用于获得预定磁特性的磁体的方法。\n\n一种用于制造RTB系烧结磁铁的方法包括准备RTB系烧结磁铁材料的步骤，RH重稀土类元素（RH包括Dy和Tb中的至少一种）和40重量％至95重量％和RH-Fe合金由以下的Fe，和含有RL金属轻稀土类元素RL（包括钕，镨，铈，镧中的至少一种），由，总稀土含量为65质量％以上，轻稀土元素RL为20重量％〜70重量％，重RH稀土类元素为50重量％以下，制备粉状扩散材料的步骤是，相对于该RTB系烧结磁铁材料，所述扩散材料在作为RTB系烧结磁铁材料的表面上存在，在低于1000℃800℃或更高的温度包括在真空或惰性气体中，RH扩散处理的步骤的状态。\n\n点域1', 'JP2011102642', 1304265600, 'JP5874951B2', 1456848000, 1354118400, NULL, 1453996800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 8, 0, 0, 0, 0, NULL, NULL, NULL, '五貫 昭一', NULL, 'JP1987074048A | JP2008263179A | JP2009289994A | JP2010263172A | WO2006112403A1 | WO2007088718A1 | WO2009107397A1 | WO2012099186A1', NULL, NULL, 1, '\\20220510\\0bf01ae573ee40daa7030db6522c7779.png', NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 39591, 39593, 39592, 2);
INSERT INTO `os_patent` VALUES (23173, '希土類永久磁石の製造方法および希土類永久磁石', '稀土永磁体和稀土永磁体的制造方法', 'JP5856953B2', 'HDDR法によって作製され、平均結晶粒径が0.1μmから1μmで結晶粒のアスペクト比(長軸/短軸の比)が2以下であるR-T-B系永久磁石粉末を準備する(工程A)。RはNd、PrをR全体に対して95原子%以上含む希土類元素、TはFeまたはFeの一部をCoおよび/またはNiで置換したものであり、Feを50原子%以上含む遷移金属元素である。一方、R’とCuからなり、かつ、Cuが2原子%以上50原子%以下であるR’-Cu系合金粉末を準備する(工程B)。R’はNdおよび/またはPrをR’全体に対して90原子%以上含み、DyおよびTbを含まない希土類元素である。R-T-B系永久磁石粉末とR’-Cu系合金粉末とを混合した(工程C)後、混合粉末を不活性雰囲気または真空中において500℃以上900℃以下の温度で熱処理を行う(工程D)。', '制备平均晶粒尺寸为0.1μm至1μm的R-T-B基永磁粉末,平均晶粒直径为0.1μm至1μm(步骤a)。R是含有95原子%以上的稀土元素,包括95原子%以上,T是含有50个原子%或更多的Fe的过渡金属元素,并且通过CO和/或Ni代替Fe或Fe的一部分。 。它是。另一方面,制备R\'-Cu合金粉末,其由R\'和Cu,Cu是2原子%或更多,50原子%或更小(步骤b)。R\'含有整个R\'的Nd和/或Pr 90原子%或更多,并且是不含Dy和Tb的稀土元素。在基于RTB的永磁粉末和R\'-Cu合金粉末(步骤c)之后,将混合粉末在惰性气氛中在500℃或更高的温度下进行热处理或更低400℃或更低真空(步骤d)。', 'JP2012515921', 1305734400, 'JP5856953B2', 1455033600, 1374422400, NULL, 1450368000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 31, 6, 0, 0, 0, NULL, NULL, NULL, '2010171905 | 2010116531', 'JP | JP', 1280419200, 6, 6, NULL, NULL, 7, 0, 0, 0, 3, NULL, NULL, NULL, '小林 大介', NULL, 'JP1990217406A | JP2000096102A | JP2002093610A | JP2005015918A | JP2008060241A | JP2008069415A | WO2011070847A1', NULL, 'H. Sepehri-Amin et al.: “Effect of Ga addition on the microstructure and magnetic properties of hydrogenation-disproportionation-desorption-recombination processed Nd-Fe-B powder\": Acta Materialia, Vol. 58, 1309-1316 (2010). | W. F. Li et al.: \"The role of grain boundaries in the coercivity of hydrogenation disproportionation desorption recombination processed Nd-Fe-B powders\":Journal of Applied Physics, Vol. 105, 07A706 (2009). | W. F. Li et al.:“Coercivity mechanism of hydrogenation disproportionation desorption recombination processed Nd-Fe-B based magnets”:Applied Physics Letters, Vol. 93, 052505 (2008).', 1, '\\20220510\\7ad67da63a6043659706cc6d40e7f73d.png', NULL, NULL, 2, NULL, NULL, 8, NULL, NULL, NULL, 39594, 39596, 39595, 6);
INSERT INTO `os_patent` VALUES (23174, 'R-Fe-B系希土類焼結磁石の製造方法', 'R-Fe-B系希土类焼结磁石の制造方法', 'JP5187411B2', '(修正有)\n\n【課題】外郭部に重希土類元素RHが濃縮された主相結晶粒をR-Fe-B系希土類焼結磁石体の内部にも効率よく形成し、残留磁束密度の低下を抑制しつつ保磁力を向上させる。\n\n【解決手段】軽希土類元素RLを主たる希土類元素Rとして含有するR2Fe14B型化合物結晶粒を主相として有する少なくとも1つのR-Fe-B系希土類焼結磁石体1を用意する工程(A)、重希土類元素RHを含有する箔2をR-Fe-B系希土類焼結磁石体1に接触させた状態でR-Fe-B系希土類焼結磁石体1とともに処理室内に配置する工程(B)、箔2およびR-Fe-B系希土類焼結磁石体1を加熱することにより、箔2から重希土類元素RHをR-Fe-B系希土類焼結磁石体1の表面に供給しつつ、重希土類元素RHをR-Fe-B系希土類焼結磁石体1の内部に拡散させる工程(C)を行う。複数のR-Fe-B系希土類焼結磁石体1は、それらの間に箔2を挟むように配置する。\n\n【選択図】図1', '(纠正)\n\n本发明的一个目的是有效地形成主相晶晶粒,其中重稀土元素RH浓缩在R-Fe-B基稀土烧结磁体的外部,同时抑制残留磁性的减少助焊剂密度。改善。\n\n解决方案RLE CRECOR INR:RL Corporation RL2Fe.14制备至少一个R-Fe-B型射线烧结磁体1,其具有B型化合物晶粒作为主相(a),含有重稀土元素Rh的箔2是R-Fe-B基RHE在与烧结磁体1接触的状态下与R-Fe-B基稀土烧结磁体1接触,步骤(b),箔2和基于R-Fe-B的稀土烧结通过加热磁体1,重稀土元素RH在R-Fe-B基随机烧结磁体1,R-Fe-B基稀土烧结磁体1a的表面上从箔2到重稀土元素RH供应到重稀土元素RH步骤(c)弥漫在内部。多个R-Fe-B基稀土烧结磁体1将夹在它们之间的箔2布置。\n\n图1', 'JP2011119231', 1306425600, 'JP5187411B2', 1366732800, 1318435200, NULL, 1359648000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 8, 0, 0, 0, 0, NULL, NULL, NULL, '高橋 克', NULL, 'JP1985141103U | JP1987192566A | JP1989117303A | JP1995122414A | JP2004296973A | JP2004304038A | JP2005011973A | JP2005285859A', NULL, NULL, 1, '\\20220510\\ac3e6f92cf634f7cb3daa66ced0aca64.png', NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 39597, 39179, 39598, 4);
INSERT INTO `os_patent` VALUES (23175, 'Ｒ−Ｔ−Ｂ系焼結磁石の製造方法', '基于R-T-B基烧结磁体的方法', 'JP5818137B2', '【課題】R-T-B系焼結磁石と保持部材とが溶着せずに一回あたりの処理量を増加させ、生産効率を向上させるとともに、不純物ガスによるR-T-B系焼結磁石の磁気特性低下や重希土類元素RHの拡散によるR-T-B系焼結磁石の磁気特性向上効果が阻害されることを防止する、R-T-B系焼結磁石の製造方法の提供。\n\n【解決手段】RH拡散源とR-T-B系焼結磁石体とを保持部材を介して交互に積層し、積層体を構成する工程と、前記積層体を処理容器内に配置する工程と、前記処理容器内の少なくとも一箇所にゲッターを配置する工程と、前記処理容器内を0.1Pa以上50Pa以下、800℃以上950℃以下の雰囲気にしてRH供給拡散処理を行う工程と、を含む。\n\n【選択図】図5', '要解决的问题：提供一种制造RTB烧结磁体的方法，该方法不焊接RTB基烧结磁体和保持构件，提高了每个工艺的产量，提高了生产效率，本发明提供一种RTB系烧结磁铁的制造方法，其防止由于RH的扩散而妨碍RTB系烧结磁铁的磁特性提高效果。\n\n解决方案：该方法包括以下步骤：通过保持构件交替层叠RH扩散源和RTB基烧结磁体，以形成层压板，将层压板设置在处理容器中，将吸气剂放置在处理容器中的至少一个位置，并且在0.1Pa以上且50Pa以下且800℃以上且950℃以下的气氛中在处理容器中进行RH供给扩散处理的步骤。\n\n点域5', 'JP2011130915', 1307894400, 'JP5818137B2', 1447776000, 1357488000, NULL, 1444320000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 8, 0, 0, 0, 0, NULL, NULL, NULL, '堀 拓也', NULL, 'JP2002025842A | JP2005209838A | JP2009135393A | JP5510456B2 | US20020012600A1 | US20120114844A1 | WO2007102391A1 | WO2011004867A1', NULL, NULL, 1, '\\20220510\\5fbb984d5f164ffe810e9d0a215362b4.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39599, 39601, 39600, 2);
INSERT INTO `os_patent` VALUES (23176, '希土類-遷移金属系合金粉末の製造方法', '稀土 - 过渡金属基合金粉末的制备方法', 'JP5609783B2', '【課題】還元拡散法により得られる希土類-遷移金属系合金粉末の減磁曲線の角形性を改善し、永久磁石性能を高めることができる希土類-遷移金属系合金粉末とその製造方法を提供。\n\n【解決手段】希土類酸化物粉末と、遷移金属粉末および/またはその酸化物粉末と、粒状または粉末状の、アルカリ金属、アルカリ土類金属およびこれらの水素化物から選ばれる少なくとも1種の還元剤とを混合し、不活性雰囲気中で該混合物を850〜1200°Cで1〜10時間保持して希土類-遷移金属系合金を含む反応生成混合物を得る第1の工程、この反応生成混合物を300℃以下に冷却した後、水素ガスを導入し、水素ガス分圧20〜40kPaの雰囲気中において700〜900°Cの温度で1〜20時間保持する第2の工程、得られた反応生成混合物を真空もしくは水素ガス分圧10kPa未満の雰囲気下500〜900°Cで10分〜20時間熱処理する第3の工程、得られた熱処理物を水で洗浄し、還元剤を含む副生物を除去して希土類-遷移金属系合金を回収する第4の工程、洗浄後の希土類-遷移金属系合金を150〜400°Cの非酸化性雰囲気下で乾燥する第5の工程とを含む希土類-遷移金属系合金粉末の製造方法などにより提供。\n\n【選択図】なし', '【課題】還元拡散法により得られる希土類-遷移金属系合金粉末の減磁曲線の角形性を改善し、永久磁石性能を高めることができる希土類-遷移金属系合金粉末とその製造方法を提供。\n\n【解決手段】希土類酸化物粉末と、遷移金属粉末および/またはその酸化物粉末と、粒状または粉末状の、アルカリ金属、アルカリ土類金属およびこれらの水素化物から選ばれる少なくとも1種の還元剤とを混合し、不活性雰囲気中で該混合物を850〜1200°Cで1〜10時間保持して希土類-遷移金属系合金を含む反応生成混合物を得る第1の工程、この反応生成混合物を300℃以下に冷却した後、水素ガスを導入し、水素ガス分圧20〜40kPaの雰囲気中において700〜900°Cの温度で1〜20時間保持する第2の工程、得られた反応生成混合物を真空もしくは水素ガス分圧10kPa未満の雰囲気下500〜900°Cで10分〜20時間熱処理する第3の工程、得られた熱処理物を水で洗浄し、還元剤を含む副生物を除去して希土類-遷移金属系合金を回収する第4の工程、洗浄後の希土類-遷移金属系合金を150〜400°Cの非酸化性雰囲気下で乾燥する第5の工程とを含む希土類-遷移金属系合金粉末の製造方法などにより提供。\n\n[选择图]无', 'JP2011136941', 1308585600, 'JP5609783B2', 1413907200, 1357488000, NULL, 1410451200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 15, 0, 0, 0, 1, NULL, NULL, NULL, '塩▲崎▼ 義晃', NULL, 'JP1986238903A | JP1989132106A | JP1990004901A | JP1991062764A | JP1993299216A | JP1994124815A | JP1995130517A | JP1996176617A | JP1997241708A | JP2000336405A | JP2000336406A | JP2006060049A | JP2007119909A | JP2008001953A | WO2004064085A1', NULL, 'T.Takeshita  and  R.Nakayama:Proc.  10th  Int‘l  Workshop  on  RE  Magnet  and  Their  Applications,  Vol.I、p.551、Kyoto,Japan(1989).', 1, NULL, NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 39602, 39604, 39603, 2);
INSERT INTO `os_patent` VALUES (23177, '表面改質された希土類系焼結磁石の製造方法', '一种表面改性稀土基烧结磁体的制造方法', 'JP5900335B2', '本発明の課題は、温度や湿度が変動する環境においても極めて優れた耐食性を有するとともに、優れた磁気特性を有する表面改質された希土類系焼結磁石の製造方法を提供することである。その解決手段としての本発明の表面改質された希土類系焼結磁石の製造方法は、希土類系焼結磁石に対し、酸素分圧が1×103Pa〜1×105Paで水蒸気分圧が45Pa以下であり、かつ、酸素分圧と水蒸気分圧の比率(酸素分圧/水蒸気分圧)が450〜20000の雰囲気下、200℃〜600℃で熱処理を行う工程を含んでなることを特徴とする。', '本发明的目的是提供一种制造具有优异磁性的表面改性稀土烧结磁体的方法,在温度和湿度波动的环境中也具有极优异的耐腐蚀性。作为溶液装置的制造表面改性稀土烧结磁体的制造方法是相对于稀土基烧结磁体的1×10氧分压。3PA-1×105在45Pa或更小的PA的蓄水蒸气压的氧分压和水蒸气部分(氧气分压/水蒸气压)下在200℃至600℃下进行热处理的步骤。它的特点是通过包括。', 'JP2012522649', 1309276800, 'JP5900335B2', 1459872000, 1377705600, NULL, 1458230400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 2, 0, 0, 0, NULL, NULL, NULL, '2010149602', 'JP', 1277827200, 9, 9, NULL, NULL, 12, 0, 0, 0, 0, NULL, NULL, NULL, '五貫 昭一', NULL, 'JP2002057052A | JP2006156853A | JP2006210864A | JP2007103523A | JP2007207936A | JP2008244126A | JP2010232357A | JP2010251340A | JP2010251341A | JP2011097004A | JP2844269B2 | WO2009041639A1', NULL, NULL, 1, '\\20220510\\b19fdda7cfba4b1585f4afd3d104eb5d.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39605, 39607, 39606, 9);
INSERT INTO `os_patent` VALUES (23178, 'Method for producing surface-modified rare earth metal-based sintered magnet', '一种表面改性稀土金属基烧结磁体的制造方法', 'US9558885B2', 'An object of the present invention is to provide a method for producing a surface-modified rare earth metal-based sintered magnet having extremely excellent corrosion resistance even in an environment with fluctuating temperature and humidity and also having excellent magnetic characteristics. The method for producing a surface-modified rare earth metal-based sintered magnet of the present invention as a means for achieving the object is characterized by comprising a step of subjecting a rare earth metal-based sintered magnet to a heat treatment at 200° C. to 600° C. in an atmosphere having an oxygen partial pressure of 1×103 Pa to 1×105 Pa and a water vapor partial pressure of 45 Pa or less with the ratio between the oxygen partial pressure and the water vapor partial pressure (oxygen partial pressure/water vapor partial pressure) being 450 to 20000.', '本发明的目的是提供一种表面改性的稀土金属基烧结磁体的制备方法，该烧结磁体即使在温度和湿度波动的环境中也具有极好的耐腐蚀性并且还具有优异的磁特性。作为实现该目的的手段，本发明的表面改性稀土类金属系烧结磁铁的制造方法的特征在于，包括使稀土类金属系烧结磁铁在200℃下进行热处理的工序。在氧气分压为1×10  3  Pa至1×10  5  Pa且水蒸气分压的气氛中至600℃氧分压与水蒸气分压（氧分压/水蒸气分压）之比为450~20000，为45Pa以下。', 'US13/807111', 1309276800, 'US9558885B2', 1485792000, 1366819200, NULL, 1485792000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 2, 0, 0, 0, NULL, NULL, NULL, '2010149602', 'JP', 1277827200, 9, 9, NULL, NULL, 7, 0, 0, 0, 2, NULL, '875', NULL, 'ZHENG, LOIS', NULL, 'CN1537313A | JP2002347117A | JP2007197279A | JP2008262317A | JP2009043601A | US20100252145A1 | WO2009041639A1', NULL, 'First Office Action issued on Jan. 27, 2015 to the corresponding Chinese Patent Application No. 201180032708.X. cited by applicant. | International Search Report for International Application No. PCT/JP2011/064865 dated Sep. 20, 2011. cited by applicant', 1, '\\20220510\\15f5a4021ea84f0387cf7c0a48aa5021.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39605, 39607, 39606, 9);
INSERT INTO `os_patent` VALUES (23179, 'R-T-B系焼結磁石の製造方法', 'R-T-B基烧结磁体的制备方法', 'JP5088596B2', '【課題】R-T-B系焼結磁石と保持部材とが溶着せずに一回あたりの処理量を増やす効率の良いRH供給、拡散処理の製造方法を提供すること。\n\n【解決手段】RH拡散源とR-T-B系焼結磁石体とを開口部を有する保持部材を介して交互に積層し、積層体を構成する工程と、前記積層体を処理容器内に配置し、前記処理容器内を0.1Pa以上50Pa以下、800℃以上950℃以下の雰囲気にしてRH供給拡散処理を行う工程と、を含むR-T-B系焼結磁石の製造方法。\n\n【選択図】図1', '本发明的一个目的是提供一种制造RH供应和扩散处理的方法,以增加每次的治疗量而不焊接基于R-T-B基烧结磁体和保持构件。\n\nHOLUTISMORS抑制模式通过具有开口的保持构件交替地层压RH扩散源和RTB的烧结磁体的步骤,并将层压板和层压板布置在加工容器中,是制造基于RTB的烧结磁体的方法包括在加工容器或更小,800℃或更高的气氛中进行0.1Pa或更大,50pa或更低的大气进行RH供应扩散处理的步骤,或者在800℃或更高的情况下或更少。\n\n图1', 'JP2011145412', 1309363200, 'JP5088596B2', 1354636800, 1337184000, NULL, 1348156800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, '2010220534', 'JP', 1285776000, 7, 7, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, '長谷川 直也', NULL, NULL, NULL, NULL, 1, '\\20220510\\6095406dd0294e7f88064912dfd2525a.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39608, 39610, 39609, 7);
INSERT INTO `os_patent` VALUES (23180, 'R-F e-B rare-earth sintered magnet and process for producing the same', 'R-F e-B稀土烧结磁铁及其制造方法', 'US8182619B2', 'First, an R—Fe—B based rare-earth sintered magnet body including, as a main phase, crystal grains of an R2Fe14B type compound that includes a light rare-earth element RL, which is at least one of Nd and Pr, as a major rare-earth element R is provided. Next, an M layer, including a metallic element M that is at least one element selected from the group consisting of Al, Ga, In, Sn, Pb, Bi, Zn and Ag, is deposited on the surface of the sintered magnet body and then an RH layer, including a heavy rare-earth element RH that is at least one element selected from the group consisting of Dy, Ho and Tb, is deposited on the M layer. Thereafter, the sintered magnet body is heated, thereby diffusing the metallic element M and the heavy rare-earth element RH from the surface of the magnet body deeper inside the magnet.', '首先，R-Fe-B系稀土类烧结磁体，其包含作为主相的R2Fe14B型化合物的晶粒，所述R2Fe14B型化合物包含作为Nd和Pr中的至少一种的轻稀土元素RL，提供主要的稀土元素R.接下来，在烧结磁体的表面上沉积包括金属元素M的M层，所述金属元素M是选自Al，Ga，In，Sn，Pb，Bi，Zn和Ag中的至少一种元素。然后，在M层上沉积RH层，其包括重稀土元素RH，其是选自Dy，Ho和Tb中的至少一种元素。之后，加热烧结磁体，从而使金属元素M和重稀土元素RH从磁体的表面更深地扩散到磁体内部。', 'US13/176097', 1309795200, 'US8182619B2', 1337616000, 1319644800, NULL, 1337616000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 3, 0, 0, 0, NULL, NULL, NULL, 'PCT/JP2007/050304 | 2006022997', 'WO | JP', 1168531200, 17, 17, NULL, NULL, 1, 6, 1, 3, 2, NULL, '850', NULL, 'SHEEHAN, JOHN', NULL, 'JP1987192566A', 'CN112635144A | CN112635187A | US10204724B2 | US10290407B2 | US9783883B2 | US9786419B2', 'English Translation of JP 62192566 A, Aug. 24, 1987. | Morimoto et al.; &#x201c;R-Fe-B Rare-Earth Sintered Magnet and Process for Producing the Same&#x201d;; U.S. Appl. No. 12/160,510, filed Jul. 10, 2008.', 1, '\\20220510\\21f2cecda0544f349efd639e66e09b4c.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39224, 39226, 39225, 18);
INSERT INTO `os_patent` VALUES (23181, 'Treatment device', '处理装置', 'US9324494B2', 'A processing system according to the present invention includes: a diffusion processing section 10 which heats a sintered R-T-B based magnet body 1 and an RH diffusion source 2 made of either a metal or alloy of a heavy rare-earth element RH (which is at least one of Dy and Tb) while rotating; a sorting section 20 which selectively sorts the RH diffusion source 2 from the sintered R-T-B based magnet body 1 when the diffusion source and the magnet body come from the diffusion processing section 10; and a heat treatment processing section 30 which conducts a heat treatment process on the sintered R-T-B based magnet body 1, in which the heavy rare-earth element RH has been diffused and from which the RH diffusion source 2 has been removed.', '根据本发明的处理系统包括：扩散处理部分 10，其加热RTB基烧结磁体 1和RH扩散源 2 旋转时由重稀土元素RH（Dy和Tb中的至少一种）的金属或合金制成;当扩散源和磁体来时，选择性地从RTB基烧结磁体 1 中分选RH扩散源 2 的分选部分 20 来自扩散处理部分 10 ;热处理工序 30 对RTB系烧结磁体 1进行热处理工序，其中重稀土元素RH已经扩散并且来自已经去除了RH扩散源 2 。', 'US13/809198', 1310313600, 'US9324494B2', 1461600000, 1368028800, NULL, 1461600000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 19, 2, 0, 0, 0, NULL, NULL, NULL, '2010158363', 'JP', 1278950400, 7, 7, NULL, NULL, 15, 0, 0, 0, 2, NULL, '869', NULL, 'KASTLER, SCOTT', 'ABOAGYE, MICHAEL', 'JP1992078473A | JP1993138053A | JP1994221765A | JP1998300356A | JP2004296973A | JP2009194262A | US20080286595A1 | US20120112863A1 | US2039062A | US4090622A | US4443186A | US4728352A | US5054747A | WO2007102391A1 | WO2011007758A1', NULL, 'English translation of Official Communication issued in corresponding International Application PCT/JP2011/065804, mailed on Feb. 21, 2013. cited by applicant. | Official Communication issued in International Patent Application No. PCT/JP2011/065804, mailed on Oct. 11, 2011. cited by applicant', 1, '\\20220510\\36095b594849466f93fb8697a2c8e092.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39611, 39613, 39612, 7);
INSERT INTO `os_patent` VALUES (23182, '処理装置', '处理装置', 'JP5853952B2', '本発明の処理装置は、R-T-B系焼結磁石体1と重希土類元素RH(DyおよびTbの少なくとも一方からなる)の金属または合金からなるRH拡散源2とを加熱しながら回転する拡散処理部10と、拡散処理部10から受け取ったR-T-B系焼結磁石体1およびRH拡散源2からRH拡散源2を選択的に分離する分離部20と、重希土類元素RHが拡散されたR-T-B系焼結磁石体1に対して、RH拡散源2が取り除かれた状態で熱処理を行う熱処理部30とを備える。', '本发明的加工装置是一种扩散处理单元,其用金属或金属的合金或重稀土元素RH的合金(Dy和Tb中的至少一个)和扩散处理单元10旋转用由金属或合金组成的RH扩散源2加热。分离单元20,用于选择性地将基于RTB的烧结磁体1与漫射处理单元10和RTB基烧结磁体分离的分离单元20具有重稀土元素RH扩散。主体1包括热处理单元30,用于在去除RH扩散源2的状态下的热处理。', 'JP2012524545', 1310313600, 'JP5853952B2', 1454947200, 1378656000, NULL, 1450368000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 19, 2, 0, 0, 0, NULL, NULL, NULL, '2010158363', 'JP', 1278950400, 7, 7, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, '五貫 昭一', NULL, 'JP2004296973A | WO2007102391A1 | WO2010113465A1 | WO2011007758A1', NULL, NULL, 1, '\\20220510\\f08c857354da43ad8ee0523c6b3e7e5d.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, NULL, 39611, 39613, 39612, 7);
INSERT INTO `os_patent` VALUES (23183, 'Method for producing R-T-B-based sintered magnets', 'R-T-B系烧结磁铁的制造方法', 'US9368276B2', 'A method for producing a sintered R-T-B based magnet includes the steps of: providing a sintered R-T-B based magnet body 1; providing an RH diffusion source including a heavy rare-earth element RH (which is at least one of Dy and Tb) and 30 mass % to 80 mass % of Fe; loading the sintered R-T-B based magnet body 1 and the RH diffusion source 2 into a processing chamber 3 so that the magnet body 1 and the diffusion source 2 are movable relative to each other and are readily brought close to, or in contact with, each other; and performing an RH diffusion process in which the sintered magnet body 1 and the RH diffusion source 2 are heated to a processing temperature of more than 850° C. through 1000° C. while being moved either continuously or discontinuously in the processing chamber.', '制造烧结的R-T-B基磁体的方法包括以下步骤：提供烧结的R-T-B基磁体&lt;b&gt; 1;提供RH扩散源，其包含重稀土元素RH（Dy和Tb中的至少一种）和30质量％至80质量％的Fe;将RTB基烧结磁体&lt;b&gt; 1 &lt;/ b&gt;和RH扩散源&lt;b&gt; 2 &lt;b&gt;加载到处理室&lt;b&gt; 3 &lt;/ b&gt;中，使得磁体&lt;b&gt; 1 &lt;扩散源&lt;b&gt; 2 &lt;/ b&gt;可相对于彼此移动，并且易于彼此靠近或接触;并且进行RH扩散处理，其中将烧结磁体&lt;b&gt; 1和RH扩散源&lt;b&gt; 2加热到大于850℃至1000℃的处理温度。当在处理室中连续或不连续地移动时。', 'US13/805466', 1310400000, 'US9368276B2', 1465833600, 1365609600, NULL, 1465833600, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, '2010157837', 'JP', 1278864000, 13, 13, NULL, NULL, 5, 4, 0, 0, 6, NULL, '869', NULL, 'YANG, JIE', 'SU, XIAOWEI', 'JP2004296973A | JP2009194262A | US20080286595A1 | US20090297699A1 | US20120112863A1', 'US10217562B2 | US20140120248A1 | US20170323722A1 | US9613748B2', 'English translation of Official Communication issued in corresponding International Application PCT/JP2011/065837, mailed on Feb. 21, 2013. cited by applicant. | Machine translation of JP2004296973, Oct. 2004. | Machine translation of JP2004296973, Oct. 2004. cited by examiner | Machine translation of JP2009-194262A. Aug. 2009. | Machine translation of JP2009-194262A. Aug. 2009. cited by examiner | Official Communication issued in International Patent Application No. PCT/JP2011/065837, mailed on Oct. 11, 2011. cited by applicant', 1, '\\20220510\\c1d19d35249641a88fe936d9ec9cbee3.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39614, 39616, 39615, 15);
INSERT INTO `os_patent` VALUES (23184, 'R-T-B系焼結磁石の製造方法', 'R-T-B基烧结磁体的制备方法', 'JP5831451B2', 'R-T-B系焼結磁石の製造方法は、R-T-B系焼結磁石体1を準備する工程と、重希土類元素RH(DyおよびTbの少なくとも一方からなる)および30質量%以上80質量%以下のFeを含むRH拡散源を準備する工程と、R-T-B系焼結磁石体1とRH拡散源2とを相対的に移動可能かつ近接または接触可能に処理室3内に装入する工程と、焼結磁石体1とRH拡散源2とを処理室3内で連続的または断続的に移動させながら850℃超1000℃以下の温度に加熱するRH拡散工程とを包含する。', '基于RTB的烧结磁体的制造方法包括将RTB的烧结磁体1和20质量%和80质量%和80质量%或更高,80质量%和30%(重量)质量以上和80质量%。制备RH扩散源的过程和在处理室3中充电的步骤,以便能够移动和接触基于RTB的烧结磁体1和RH扩散源2烧结磁体1与烧结磁体1载有RH扩散步骤,包括在处理室3中连续地或间歇地移动RH扩散步骤的RH扩散步骤,同时连续地或间歇地移动RH扩散源2。', 'JP2012524549', 1310400000, 'JP5831451B2', 1449590400, 1378656000, NULL, 1446739200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 23, 1, 0, 0, 0, NULL, NULL, NULL, '2010157837', 'JP', 1278864000, 13, 13, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, '五貫 昭一', NULL, 'JP2004296973A | JP2009043776A | JP2009289994A | WO2007102391A1', NULL, NULL, 1, '\\20220510\\d2caa5b8ea67454ab4237ab36898119d.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 39614, 39616, 39615, 15);
INSERT INTO `os_patent` VALUES (23185, 'R-T-B계 소결 자석의 제조 방법', 'R-T-B烧结磁体的制造方法', 'KR101823425B1', 'R-T-B계 소결 자석의 제조 방법은, R-T-B계 소결 자석체(1)를 준비하는 공정과, 중희토류 원소 RH(Dy 및 Tb 중적어도 1종으로 이루어짐) 및 30질량% 이상 80질량% 이하의 Fe을 포함하는 RH 확산원을 준비하는 공정과, R-T-B계 소결 자석체(1)와 RH 확산원(2)을 상대적으로 이동 가능하고 또한 근접 또는 접촉 가능하게 처리실(3) 내에장입하는 공정과, 소결 자석체(1)와 RH 확산원(2)을 처리실(3) 내에서 연속적 또는 단속적으로 이동시키면서 850℃ 초과 1000℃ 이하의 온도로 가열하는 RH 확산 공정을 포함한다.\n\n등록특허 10-1823425', 'RTB烧结磁体的制造方法包括制备RTB烧结磁体1的步骤，制备RTB烧结磁体1的步骤，制备RTB烧结磁体1的步骤，以及通过混合30质量％制备RTB烧结磁体1的步骤（1）和RH扩散源（2）在处理室（3）中，使得RTB烧结磁体（1）和RH扩散源（2）可相对移动并彼此靠近或接触;和RH扩散步骤，其中主体1和RH扩散源2在处理室3中连续或间歇地移动并加热到大于850℃但不大于1000℃的温度。\n\n专利10-1823425', 'KR1020127033069', 1310400000, 'KR101823425B1', 1517241600, 1376409600, NULL, 1516723200, '韩国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 20, 1, 0, 0, 0, NULL, NULL, NULL, '2010157837', 'JP', 1278864000, 13, 13, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\46210111a3374cb9adf11216e8510451.png', NULL, NULL, 1, NULL, NULL, 13, NULL, NULL, NULL, 39614, 39616, 39615, 15);
INSERT INTO `os_patent` VALUES (23186, 'Method for producing r-t-b-based sintered magnets', 'r-t-b系烧结磁铁的制造方法', 'EP2595163B1', 'A method for producing a sintered R-T-B based magnet includes the steps of: providing a sintered R-T-B based magnet body 1; providing an RH diffusion source including a heavy rare-earth element RH (which is at least one of Dy and Tb) and 30 mass% to 80 mass% of Fe; loading the sintered R-T-B based magnet body 1 and the RH diffusion source 2 into a processing chamber 3 so that the magnet body 1 and the diffusion source 2 are movable relative to each other and are readily brought close to, or in contact with, each other; and performing an RH diffusion process in which the sintered magnet body 1 and the RH diffusion source 2 are heated to a processing temperature of more than 850 °C through 1000 °C while being moved either continuously or discontinuously in the processing chamber.', '制造烧结R-T-B基磁体的方法包括以下步骤：提供烧结的R-T-B基磁体1;提供RH扩散源，其包含重稀土元素RH（Dy和Tb中的至少一种）和30质量％至80质量％的Fe;将RTB系烧结磁铁体1和RH扩散源2加载到处理室3内，使磁铁体1和扩散源2相对于彼此移动，容易接近或相互接触;并且进行RH扩散处理，其中烧结磁体1和RH扩散源2被加热到大于850℃至1000℃的处理温度，同时在处理室中连续或不连续地移动。', 'EP2011806756', 1310400000, 'EP2595163B1', 1559059200, 1369152000, NULL, 1559059200, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 0, 1, 0, 0, 0, NULL, NULL, NULL, '2010157837', 'JP', 1278864000, 13, 13, NULL, NULL, 7, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, 'EP2455954A1 | JP2004296973A | JP2009194262A | JP2009289994A | US20090297699A1 | WO2007102391A1 | WO2011007758A1', NULL, NULL, 1, '\\20220510\\e390cab0cb724ad3962c122a0fe5b914.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, '有效:DE | 失效:RS,NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,HU,SE,SI,MC,SK,SM,GB,IE,EE,CH,MT,IS,IT,GR,AL,ES,AT,CY,CZ,PL,RO,LI,TR,NL | 未确认:MK', 39614, 39616, 39615, 15);
INSERT INTO `os_patent` VALUES (23187, 'VERFAHREN ZUR HERSTELLUNG VON SINTERMAGNETEN AUF RTB-BASIS', '在RTB基础上产生烧结磁体的方法', 'DE602011059370T2', 'A method for producing R-T-B-based sintered magnets includes: a step for preparing R-T-B-based sintered magnet bodies (1); a step for preparing RH diffusion sources that contain a heavy rare earth element (RH) (comprising Dy and/or Tb) and Fe with a mass% of 30 to 80; a step for charging the R-T-B-based sintered magnet bodies (1) and the RH diffusion sources (2) into a processing chamber (3) in such a manner that the R-T-B-based sintered magnet bodies (1) and the RH diffusion sources (2) can move relatively, and can come close to each other or come into contact with each other; and an RH diffusion step for heating the sintered magnet bodies (1) and the RH diffusion sources (2) at a temperature of 850°C to 1000°C while moving the sintered magnet bodies (1) and the RH diffusion sources (2) continuously or intermittently in the processing chamber (3).', '制备R-T-B基烧结磁体的方法包括：制备R-T-B基烧结磁体（1）的步骤;制备含有重稀土元素（RH）（包含Dy和/或Tb）和质量％为30-80的Fe的RH扩散源的步骤;将RTB系烧结磁体（1）和RH扩散源（2）以RTB系烧结磁体（1）和RH扩散源（RT）的方式装入处理室（3）的工序2）可以相对移动，可以相互靠近或相互接触; RH扩散步骤，用于在850℃至1000℃的温度下加热烧结磁体（1）和RH扩散源（2），同时移动烧结磁体（1）和RH扩散源（2）连续地或间歇地在处理室（3）中。', 'DE602011059370', 1310400000, 'DE602011059370T2', 1559059200, 1559059200, NULL, 1559059200, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 37, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 13, NULL, NULL, NULL, 39617, 39616, 39618, 15);
INSERT INTO `os_patent` VALUES (23188, 'Method for producing R-T-B sintered magnet', 'R-T-B烧结磁铁的制造方法', 'US9721724B2', '[Problem] To provide a highly efficient manufacturing method including an RH supply-diffusion process by which the number of magnets processed at a time can be increased without allowing sintered R-T-B based magnets to stick to holding members.\n\n[Solution] A method for producing a sintered R-T-B based magnet including the steps of: forming a stack of RH diffusion sources and sintered R-T-B based magnet bodies by stacking the diffusion sources and the magnet bodies alternately with a holding member having openings interposed; and carrying out an RH supply-diffusion process by loading the stack into a process vessel and creating an atmosphere with a pressure of 0.1 Pa to 50 Pa and a temperature of 800° C. to 950° C. within the process vessel.', '[问题]提供一种包括RH供应 - 扩散工艺的高效制造方法，通过该供应 - 扩散工艺，可以增加一次处理的磁体的数量，而不允许烧结的R-T-B基磁体粘附到保持构件。\n\n[溶液]一种制造烧结R-T-B基磁体的方法，包括以下步骤：通过将扩散源和磁体体交替地与具有开口的保持构件堆叠，形成RH扩散源堆叠和烧结R-T-B基磁体;通过将堆叠装载到处理容器中并在处理容器内产生压力为0.1Pa至50Pa且温度为800℃至950℃的气氛来执行RH供应 - 扩散过程。', 'US13/822659', 1312473600, 'US9721724B2', 1501516800, 1374076800, NULL, 1501516800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, '2011145412 | 2010220534', 'JP | JP', 1309363200, 7, 7, NULL, NULL, 13, 0, 0, 0, 2, NULL, '869', NULL, 'LOUIE, MANDY', NULL, 'JP1992143221A | JP2007329250A | JP2009135393A | JP2009200180A | JP2011233554A | US20060231163A1 | US20080286595A1 | US20100182113A1 | US20100239878A1 | US20120114844A1 | US6280792B1 | WO2009104640A1 | WO2011004867A1', NULL, 'English translation of Official Communication issued in corresponding International Application PCT/JP2011/067946, issued on Apr. 9, 2013. cited by applicant | Official Communication issued in International Patent Application No. PCT/JP2011/067946, mailed on Nov. 8, 2011. cited by applicant.', 1, '\\20220510\\e2d6c97ce6a44008aeb71c07747bf5e2.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39608, 39610, 39609, 7);
INSERT INTO `os_patent` VALUES (23189, 'カップリング装置およびカップリング装置の製造方法', '耦合装置和制造耦合装置的方法', 'JP5895425B2', '(修正有)\n\n【課題】大型化を抑制しつつ、R-T-B系磁石を用いた場合にもR-T-B系磁石が減磁するのを抑制することが可能なカップリング装置を提供する。\n\n【解決手段】このカップリング装置100の駆動側回転部1および従動側回転部2は、それぞれ、対向面12aおよび22a側に形成されるとともに、駆動側回転部1と従動側回転部2とを磁気カップリングするための磁石12および22を含み、磁石12および22は、軽希土類元素と、Feを主とする遷移元素と、B(ホウ素)とを主に含むR-T-B系磁石からなり、磁石12および22には、それぞれ、隣接する異なる磁極の間に溝部12fおよび22fが設けられるとともに、溝部12fおよび22fを介して重希土類元素が磁石12および22に拡散されることによって、重希土類元素拡散領域が設けられている。\n\n【選択図】図2', '（经修改）\n\n要解决的问题：提供一种即使在使用R-T-B型磁体时也能够抑制R-T-B磁体的退磁的耦合装置，同时抑制尺寸的增加。\n\n解决方案：联接装置100的驱动侧旋转部分1和从动侧旋转部分2分别形成在相对表面12a和22a侧，以及驱动侧旋转部分1和从动侧旋转部分2用于磁耦合的磁体12和22，以及磁体12和22由主要包括轻稀土元素的RTB磁体，主要由Fe和B（硼）组成的过渡元件和磁体12组成。并且22在相邻的不同磁极之间分别设置有槽12f和22f，并且重稀土元素经由槽12f和22f扩散到磁体12和22中，使得重稀土元素扩散区域提供。\n\n.The', 'JP2011213123', 1317139200, 'JP5895425B2', 1459267200, 1340812800, NULL, 1457625600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 32, 1, 0, 0, 0, NULL, NULL, NULL, '2010219795', 'JP', 1285689600, 2, 2, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '安池 一貴', NULL, 'JP1984060886U | JP2000125541A | JP2007053351A | JP2008256118A | JP2010133463A | WO2010052862A1', NULL, NULL, 1, '\\20220510\\027b829838c248a78db3e07b0e672c0a.png', NULL, NULL, 1, NULL, NULL, 14, NULL, NULL, NULL, 39619, 39621, 39620, 2);
INSERT INTO `os_patent` VALUES (23190, 'R-T-B系焼結磁石の製造方法', 'R-T-B基烧结磁体的制备方法', 'JP5849956B2', '【課題】量産性に優れた重希土類元素ＲＨの拡散処理を提供する。【解決手段】焼結磁石の製造方法は、Ｒ−Ｔ−Ｂ系焼結磁石体を準備する工程と、ＤｙおよびＴｂの少なくとも一方を含むフッ化物、酸化物、酸フッ化物の少なくともいずれかからなるＲＨ拡散源を準備する工程と、前記Ｒ−Ｔ−Ｂ系焼結磁石体と前記ＲＨ拡散源とを相対的に移動可能かつ近接または接触可能に処理室内に装入する工程と、前記Ｒ−Ｔ−Ｂ系焼結磁石体と前記ＲＨ拡散源とを前記処理室内にて連続的または断続的に移動させながら、前記Ｒ−Ｔ−Ｂ系焼結磁石体および前記ＲＨ拡散源を８００℃以上９５０℃以下の処理温度に加熱するＲＨ拡散処理工程とを包含する。【選択図】図１', '本发明的目的是提供优异的大规模生产率优异的重稀土元素RH的扩散过程。制造烧结磁体的方法包括制备基于R-T-B的烧结磁体,含有至少一种Dy和Tb的氟化物,氧化物,氧化物,酰氟离酰氟化物中的至少一种制备RH扩散的过程源极和基于RTB的烧结磁体和RH扩散源连接到处理室相对可移动和较倾斜或接触的,并且RTB的烧结磁体和RH扩散源800°C连续或间歇地移动在处理室中连续或间歇地基于-TB的烧结磁体和RH扩散源。它包括RH扩散处理过程加热至950℃或更低的处理温度。图1', 'JP2012536532', 1317225600, 'JP5849956B2', 1454428800, 1393171200, NULL, 1449763200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, '2010220792', 'JP', 1285776000, 9, 9, NULL, NULL, 8, 0, 0, 0, 0, NULL, NULL, NULL, '堀 拓也', NULL, 'JP2002093610A | JP2004296973A | JP2006303197A | JP2009043776A | JP2009194262A | JP5510457B2 | WO2006043348A1 | WO2012008426A1', NULL, NULL, 1, '\\20220510\\4f09afd35ae9482089a0484e803e0587.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 39622, 39624, 39623, 9);
INSERT INTO `os_patent` VALUES (23191, 'R-T-B sintered magnet manufacturing method', 'R-T-B烧结磁铁制造方法', 'US9293252B2', '[Problem] To provide a heavy rare-earth element RH diffusion process that contributes greatly to mass production.\n\n[Solution] A method for producing a sintered magnet includes the steps of: providing a sintered R-T-B based magnet body; providing an RH diffusion source which is made of at least one of a fluoride, an oxide and an oxyfluoride that each include Dy and/or Tb; loading the sintered R-T-B based magnet body and the RH diffusion source into a process chamber so that the magnet body and the diffusion source are movable relative to each other and are readily brought close to, or into contact with, each other; and performing an RH diffusion process in which the sintered R-T-B based magnet body and the RH diffusion source are heated to a processing temperature of 800° C. through 950° C. while being moved either continuously or discontinuously in the process chamber.', '[问题]提供重稀土元素RH扩散过程，其有助于大规模生产。\n\n[溶液]烧结磁体的制造方法包括以下步骤：提供烧结的R-T-B基磁体;提供RH扩散源，其由氟化物，氧化物和氟氧化物中的至少一种制成，每种都包括Dy和/或Tb;将烧结的R-T-B基磁体和RH扩散源加载到处理室中，使得磁体和扩散源可相对于彼此移动，并且容易彼此靠近或接触;并且进行RH扩散处理，其中将烧结的R-T-B基磁体和RH扩散源在处理室中连续或不连续地移动的同时被加热到800℃至950℃的处理温度。', 'US13/823153', 1317225600, 'US9293252B2', 1458576000, 1372867200, NULL, 1458576000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, '2010220792', 'JP', 1285776000, 9, 9, NULL, NULL, 11, 2, 0, 0, 5, NULL, '869', NULL, 'LOUIE, MANDY', NULL, 'CN101620904A | JP2004296973A | JP2006303197A | JP2009194262A | US20020059965A1 | US20070240789A1 | US20080245442A1 | US20090297699A1 | US20120112863A1 | US4380559A | US8801870B2', 'US20140120248A1 | US9613748B2', 'English translation of JP 2004-296973. Accessed by examiner Nov. 28, 2015. cited by examiner | English translation of Official Communication issued in corresponding International Application PCT/JP2011/072318, issued on Apr. 9, 2013. cited by applicant | English translation of abstract for JP02-004433. cited by examiner | Hirota \"Coercivity enhancement by the grain boundary diffusion process to NDFEB sintered magnets\" IEEE Transaction on magnetics vol. 42 No. 10 Oct. 2006. p. 2909-2911. cited by examiner | Official Communication issued in International Patent Application No. PCT/JP2011/072318, mailed on Dec. 20, 2011. cited by applicant.', 1, '\\20220510\\71d27c41561548a597bde85cafb46d2b.png', NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 39622, 39624, 39623, 9);
INSERT INTO `os_patent` VALUES (23192, '電気銅めっき被膜を希土類系永久磁石の表面に形成する方法', '一种在稀土基永磁体表面上形成电解铜镀膜的方法', 'JP5013031B2', '本発明の課題は、密着性に優れる電気銅めっき被膜を希土類系永久磁石の表面に形成するための新規な方法を提供することである。その解決手段としての本発明の方法は、磁石をめっき液に浸漬した後、電気銅めっき処理を行うための陰極電流密度として０．０５Ａ／ｄｍ２〜４．０Ａ／ｄｍ２を１０秒〜１８０秒かけて印加し、処理を開始することを特徴とする。', '本发明的一个目的是提供一种用于形成优异的粘合性在稀土永磁体的表面上优异的电镀电镀涂层的新方法。作为溶液装置的本发明方法是0.05A / DM 2至4.0A / DM2至10秒至180秒,因为在浸入电镀液中的磁体之后进行电镜电镀过程的阴极电流密度。它的特点是通过应用和开始处理。', 'JP2012513105', 1317225600, 'JP5013031B2', 1346169600, 1346169600, NULL, 1339689600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 2, 0, 0, 0, NULL, NULL, NULL, '2010222144', 'JP', 1285776000, 11, 11, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '田中 純一', NULL, 'JP2002105690A | JP2002126642A | JP2008031536A', NULL, NULL, 1, '\\20220510\\f7864a536f67490bb9b62bf506b2c532.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39625, 39627, 39626, 12);
INSERT INTO `os_patent` VALUES (23193, 'Method for forming electric copper plating film on surface of rare earth permanent magnet', '在稀土永磁体表面形成电镀铜膜的方法', 'EP2624266B1', 'An object of the present invention is to provide a novel method for forming an electrolytic copper plating film having excellent adhesion on the surface of a rare earth metal-based permanent magnet. The method of the present invention as a means for achieving the object is characterized in that after a magnet is immersed in a plating solution, a cathode current density of 0.05 A/dm 2 to 4.0 A/dm 2 for performing an electrolytic copper plating treatment is applied thereto over 10 seconds to 180 seconds to start the treatment.', '本发明的目的是提供一种用于形成在稀土金属基永磁体的表面上具有优异粘附性的电解铜镀膜的新颖方法。 作为实现上述目的的手段的本发明的方法的特征在于,在将磁铁浸入镀液中之后,进行电解镀铜处理的阴极电流密度为0.05A / dm 2〜4.0A / dm 2。 在10秒至180秒内将其施用以开始治疗。', 'EP2011829270', 1317225600, 'EP2624266B1', 1598371200, 1375804800, NULL, 1598371200, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 14, 2, 0, 0, 0, NULL, NULL, NULL, '2010222144', 'JP', 1285776000, 11, 11, NULL, NULL, 9, 0, 0, 0, 0, NULL, '890', NULL, NULL, NULL, 'JP2002105690A | JP2002126642A | JP2003100536A | JP2008031536A | US20060213778A1 | US20070269679A1 | US20090035603A1', NULL, NULL, 1, '\\20220510\\89cc1912b97942308dabb1659c840f6a.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, '有效:DE | 失效:RS,NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,SE,SI,MC,SK,SM,GB,IE,EE,CH,IS,IT,GR,AL,ES,AT,CZ,PL,RO,LI,NL | 未确认:HU,MK,MT,CY,TR', 39625, 39627, 39626, 12);
INSERT INTO `os_patent` VALUES (23194, 'VERFAHREN ZUR BILDUNG EINES ELEKTRISCHEN KUPFERPLATTIERUNGSFILMS AUF DER OBERFLÄCHE EINES SELTENERD-PERMANENTMAGNETEN', '在稀土永磁面上形成电镀铜电镀膜的方法', 'DE602011068374T2', 'In order to address the problem of providing a novel method for forming an electric copper plating film with excellent adhesion on the surface of a rare earth permanent magnet, the method of the present invention is characterized by the immersion of a magnet in plating solution, followed by the application of 0.05A/dm2-4.0A/dm2 as the cathode current density for electric copper plating for 10-180 s, to commence processing.', '为了解决提供一种在稀土永磁体表面上形成具有优异粘附性的电镀铜膜的新方法的问题，本发明的方法的特征在于将磁体浸入电镀液中，然后通过施加0.05A / dm2-4.0A / dm2作为电镀铜的阴极电流密度10-180s，开始加工。', 'DE602011068374', 1317225600, 'DE602011068374T2', 1598371200, 1598371200, NULL, 1598371200, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 24, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '855', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39628, 39627, 39629, 12);
INSERT INTO `os_patent` VALUES (23195, '極異方性配向を有する円弧状磁石、その製造方法、及びそれを製造するための金型', '具有极性各向异性取向的弧形磁体，其制造方法以及用于制造该磁体的模具', 'JP5904124B2', '平行磁場中に配置される非磁性超硬合金からなるダイスと、前記ダイスに設けられた内弧壁、外弧壁及び2つの側壁を有する断面円弧状のキャビティと、前記キャビティの外弧壁側に配置された中央強磁性体と、前記キャビティの各側壁側に対称に配置された一対の側部強磁性体とを有し、前記キャビティは、円周方向中央における半径方向が前記平行磁場方向と一致するように配置されており、前記中央強磁性体は、平行磁場と垂直な方向の幅が、前記キャビティの幅よりも小さく、前記一対の側部強磁性体は、前記一対の側部強磁性体によって挟まれた領域内に前記キャビティが含まれるように配置されていることを特徴とする極異方性配向を有する円弧状磁石を磁場中成形するための金型。', '一种由非磁性硬质合金制成的模具，设置在平行磁场中，腔体具有弧形横截面并具有内弧壁，外弧壁和设置在模具上的两个侧壁，以及腔体的外弧壁侧并且一对侧铁磁构件对称地设置在腔体的每个侧壁上，其中腔体在圆周方向上的中心处具有径向方向，即平行磁场的方向并且中心铁磁体在垂直于平行磁场的方向上的宽度小于空腔的宽度，并且一对侧面铁磁体由一对侧部形成。一种用于形成在磁场中具有极性各向异性取向的弧形磁体的模具，其被设置成使得空腔包括在由铁磁材料夹在中间的区域中。', 'JP2012550894', 1324396800, 'JP5904124B2', 1460476800, 1401897600, NULL, 1458835200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 2, 0, 0, 0, NULL, NULL, NULL, '2010293954 | 2011166721', 'JP | JP', 1293465600, 8, 8, NULL, NULL, 3, 0, 0, 0, 0, NULL, NULL, NULL, '堀 拓也', NULL, 'JP1993168201A | JP2005287181A | JP2006042414A', NULL, NULL, 1, '\\20220510\\affa5a614f1b4e3c85cb52882ad974de.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39630, 39632, 39631, 8);
INSERT INTO `os_patent` VALUES (23196, 'Arcuate magnet having polar-anisotropic orientation, and method and molding die for producing it', '具有极性各向异性取向的弧形磁体及其制造方法和成型模具', 'US9646751B2', 'A die apparatus for molding an arcuate magnet having polar-anisotropic orientation in a magnetic field, which comprises a die made of non-magnetic cemented carbide, which is arranged in a parallel magnetic field generated by a pair of opposing magnetic field coils; an arcuate-cross-sectional cavity having an inner arcuate wall, an outer arcuate wall and two side walls, which is disposed in the die; a central ferromagnetic body arranged on the side of the outer arcuate wall of the cavity; and a pair of side ferromagnetic bodies symmetrically arranged on both side wall sides of the cavity; the cavity being arranged such that its radial direction at a circumferential center thereof is identical with the direction of the parallel magnetic field; the width of the central ferromagnetic body being smaller than the width of the cavity in a direction perpendicular to the parallel magnetic field; and a pair of the side ferromagnetic bodies being arranged such that the cavity is positioned in a region sandwiched by a pair of the side ferromagnetic bodies.', '一种用于模制在磁场中具有极性各向异性取向的弧形磁体的模具装置，其包括由非磁性硬质合金制成的模具，该模具布置在由一对相对的磁场线圈产生的平行磁场中;弧形截面空腔，具有内弧形壁，外弧形壁和两个侧壁，它们设置在模具中;中央铁磁体，设置在腔的外弧形壁的一侧;一对侧铁磁体对称地设置在腔体的两侧壁上;空腔的布置使得其圆周中心的径向与平行磁场的方向相同;中心铁磁体的宽度在垂直于平行磁场的方向上小于腔的宽度;并且一对侧面铁磁体被布置成使得空腔位于由一对侧面铁磁体夹在中间的区域中。', 'US13/976254', 1324396800, 'US9646751B2', 1494259200, 1382544000, NULL, 1494259200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 17, 2, 0, 0, 0, NULL, NULL, NULL, '2010293954 | 2011166721', 'JP | JP', 1293465600, 8, 8, NULL, NULL, 21, 1, 0, 0, 3, NULL, '870', NULL, 'ROE, JESSEE', 'JONES, JEREMY', 'DE2629990A1 | JP1987008506A | JP1993129127A | JP1993168201A | JP2002134314A | JP2003017309A | JP2003199274A | JP2005044820A | JP2005286081A | JP2005287181A | JP2006042414A | US20030117032A1 | US20050076973A1 | US20050093390A1 | US20060017343A1 | US4150927A | US4981532A | US5204569A | US5273571A | US6992553B2 | US7202585B2', 'US10573440B2', 'Communication dated Oct. 1, 2015, issued by the German Patent Office in corresponding German Application No. 11 2011 104 619.7. cited by applicant. | Communication dated Sep. 29, 2015, issued by the Japan Patent Office in corresponding Japanese Application No. 2012-550894. cited by applicant | International Search Report for PCT/JP2011/079737, dated Apr. 3, 2012. cited by applicant', 1, '\\20220510\\729778fc6a31443b8777ab9201011918.png', NULL, NULL, 1, NULL, NULL, 19, NULL, NULL, NULL, 39630, 39632, 39631, 8);
INSERT INTO `os_patent` VALUES (23197, 'めっき被膜を表面に有するR-Fe-B系焼結磁石の製造方法', 'R-Fe-B系烧结磁铁的制造方法，其表面具有镀膜', 'JP5812016B2', '本発明の課題は、Ｒ−Ｆｅ−Ｂ系焼結磁石に対するめっき処理の前処理としての酸洗およびスマット除去、そしてその後のめっき処理という一連の工程を、手間をかけずに効果的に行って、密着性に優れためっき被膜を表面に有するＲ−Ｆｅ−Ｂ系焼結磁石を製造する方法を提供することである。その解決手段としての本発明のめっき被膜を表面に有するＲ−Ｆｅ−Ｂ系焼結磁石の製造方法は、めっき処理の前処理としての磁石の酸洗およびスマット除去、そしてその後のめっき処理という一連の工程を、磁石を合成樹脂製バレルに収容した状態で一貫して行い、スマット除去を、脱気を行うことで溶存酸素量を０．１ｐｐｍ〜６ｐｐｍとした水の中でバレルを回転させながら磁石を超音波洗浄することで行うことを特徴とする。', '本发明的一个目的是有效地进行努力,而不会使酸洗并作为用于R-Fe-B基烧结磁体的电镀处理的预处理而去除电镀过程,以及随后的电镀工艺制造R-的方法在表面上提供具有具有优异粘合性具有优异粘合的Fe-B基烧结磁体。用于制造具有本发明镀膜的R-Fe-B基烧结磁体作为表面的溶液是一系列酸洗和磁体的冲洗作为电镀过程的预处理,以及随后的电镀过程磁铁的步骤一致地容纳在合成树脂桶中,并且通过脱气,溶解氧的量在具有0.1ppm至6ppm的水中旋转。它的特征在于进行磁体的超声波清洗。', 'JP2012557854', 1325606400, 'JP5812016B2', 1447171200, 1404316800, NULL, 1443715200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 10, 3, 0, 0, 0, NULL, NULL, NULL, '2011029986', 'JP', 1297699200, 10, 10, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, '國方 康伸', NULL, 'JP1989286407A | JP1992283911A | JP1995230928A | JP2004289021A', NULL, NULL, 1, '\\20220510\\cfe4cf32400b4869b178b3aa488ba615.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39633, 39635, 39634, 11);
INSERT INTO `os_patent` VALUES (23198, 'Production method for R—Fe—B based sintered magnet having plating film on surface thereof', '一种表面具有镀膜的R-Fe-B系烧结磁体的制造方法', 'US9267217B2', 'An object of the present invention is to provide a production method for an R—Fe—B based sintered magnet having a plating film excellent in adhesiveness on the surface thereof, by conducting a series of processes of acid cleaning and smut removal as pretreatments of an R—Fe—B based sintered magnet, and the subsequent plating treatment effectively without causing trouble. The production method of the present invention includes a series of processes of acid cleaning and smut removal of a magnet as pretreatments, and the subsequent plating treatment is conducted consistently with a state, in which the magnet is placed in a barrel made of synthetic resin. The smut removal is conducted by ultrasonic cleaning of the magnet with rotating the barrel in water in which the dissolved oxygen amount is set to 0.1 ppm to 6 ppm by degassing.', '本发明的一个目的是提供一种R-Fe-B基烧结磁体的制备方法，该烧结磁体具有在其表面上具有优异粘附性的镀膜，通过进行一系列酸清洗和去除污垢的方法作为预处理。 R-Fe-B基烧结磁体，以及随后的电镀处理有效而不会引起麻烦。本发明的制造方法包括作为预处理的一系列酸清洁和除去磁铁的过程，并且随后的电镀处理在一种状态下进行，其中磁体放置在由合成树脂制成的筒中。通过在水中旋转桶来超声清洗磁体来进行污迹去除，其中通过脱气将溶解氧量设定为0.1ppm至6ppm。', 'US13/984943', 1325606400, 'US9267217B2', 1456156800, 1385568000, NULL, 1456156800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 9, 3, 0, 0, 0, NULL, NULL, NULL, '2011029986', 'JP', 1297699200, 10, 10, NULL, NULL, 10, 0, 0, 0, 4, NULL, '875', NULL, 'WIECZOREK, MICHAEL', NULL, 'CN1607268A | JP1985140713A | JP1989286407A | JP1992283911A | JP1995230928A | JP1999354361A | JP2004289021A | US20100330361A1', NULL, 'Chinese Second Office Action issued on Jun. 4, 2015 to the corresponding Chinese patent application No. 20128008753.6. cited by applicant. | International Search Report for International Application No. PCT/JP2012/050002 dated Feb. 7, 2012. cited by applicant | Machine translation of Japanese Patent Publication No. 07-230928. | Machine translation of Japanese Patent Publication No. 07-230928. cited by examiner', 1, '\\20220510\\980850b07fd348919aa9f60b45314fbe.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39633, 39635, 39634, 11);
INSERT INTO `os_patent` VALUES (23199, 'Production method for r-fe-b sintered magnet having plating film on surface thereof', '一种表面具有镀膜的r-fe-b烧结磁体的生产方法', 'EP2677065B1', 'An object of the present invention is to provide a production method for an R-Fe-B based sintered magnet having a plating film excellent in adhesiveness on the surface thereof, by conducting a series of processes of acid cleaning and smut removal as pretreatments of a plating treatment of an R-Fe-B based sintered magnet, and the subsequent plating treatment, effectively without requiring troubles. The production method for an R-Fe-B based sintered magnet having a plating film on the surface thereof of the present invention, as a solution method therefor, is characterized in that a series of processes of acid cleaning and smut removal of a magnet as pretreatments of a plating treatment, and the subsequent plating treatment is conducted consistently with a state, in which the magnet is placed in a barrel made of synthetic resin, and that the smut removal is conducted by ultrasonic cleaning of the magnet with rotating the barrel in water in which the dissolved oxygen amount is set to 0.1 ppm to 6 ppm by degassing.', '本发明的一个目的是提供一种R-Fe-B基烧结磁体的制备方法，该烧结磁体具有在其表面上具有优异粘附性的镀膜，通过进行一系列酸洗和除污作为预处理的方法。 R-Fe-B系烧结磁铁的电镀处理和后续的电镀处理，无需麻烦。本发明的表面具有镀膜的R-Fe-B系烧结磁铁的制造方法，作为其溶液方法，其特征在于，对磁铁进行酸洗和除尘的一系列工序。电镀处理的预处理，随后的电镀处理是在一种状态下进行的，其中磁体放置在由合成树脂制成的圆筒中，并且通过在旋转圆筒的情况下通过超声波清洁磁体来进行污迹去除。通过脱气将溶解氧量设定为0.1ppm至6ppm的水。', 'EP2012747211', 1325606400, 'EP2677065B1', 1529424000, 1387900800, NULL, 1529424000, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 12, 3, 0, 0, 0, NULL, NULL, NULL, '2011029986', 'JP', 1297699200, 10, 10, NULL, NULL, 11, 0, 0, 0, 0, NULL, '874', NULL, NULL, NULL, 'JP2002332592A | JP2004137533A | JP2004249215A | JP2004289021A | JP3213157B2 | US20100330361A1', NULL, NULL, 1, '\\20220510\\e902dfb118ba4f85b71c22d8233ed6bb.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, '有效:DE | 失效:RS,NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,HU,SE,SI,MC,SK,SM,GB,IE,EE,CH,MT,IS,IT,GR,AL,ES,AT,CY,CZ,PL,RO,LI,TR,NL | 未确认:MK', 39633, 39635, 39634, 11);
INSERT INTO `os_patent` VALUES (23200, 'VERFAHREN ZUR HERSTELLUNG EINES R-FE-B-SINTERMAGNETEN MIT EINER PLATTIERUNGSSCHICHT AUF DER OBERFLÄCHE', '在表面上用电镀层制造R-Fe-B烧结磁体的方法', 'DE602012047655T2', 'The present invention addresses the problem of providing a method for producing an R-Fe-B sintered magnet having a plating film on the surface thereof and with excellent adhesion, said method including a series of steps that are performed effectively and without requiring much time, and which include acid washing and desmutting as pretreatments for the plating of the R-Fe-B sintered magnet, followed by the plating step. As a solution to said problem, this production method for a R-Fe-B sintered magnet having a plating film on the surface thereof is characterized by: the series of steps, namely the plating pretreatment steps of acid washing and desmutting of the magnet followed by the plating, being performed as a combination while the magnet is a state of being housed in a composite resin barrel; and the desmutting being performed by ultrasonic cleaning of the magnet, while the barrel is being rotated, in water having a dissolved oxygen amount of 0.1-6 ppm as a result of degassing.', '本发明解决了提供一种制备R-Fe-B烧结磁体的方法的问题，该烧结磁体在其表面上具有镀膜并具有优异的粘附性，所述方法包括一系列有效且无需太多时间的步骤，其中包括酸洗和去污，作为电镀R-Fe-B烧结磁体的预处理，然后进行电镀步骤。作为所述问题的解决方案，这种用于在其表面上具有镀膜的R-Fe-B烧结磁体的制造方法的特征在于：一系列步骤，即酸洗的镀覆预处理步骤和随后的磁体的去污处理通过电镀，作为组合进行，同时磁体处于容纳在复合树脂桶中的状态;并且，当桶旋转时，通过超声波清洗磁体，在脱气的结果，溶解氧量为0.1-6ppm的水中进行去污。', 'DE602012047655', 1325606400, 'DE602012047655T2', 1529424000, 1529424000, NULL, 1529424000, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 19, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '855', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39636, 39635, 39637, 11);
INSERT INTO `os_patent` VALUES (23201, 'Method of producing R-T-B sintered magnet', 'R-T-B烧结磁铁的制造方法', 'US9484151B2', 'A method for producing a sintered R-T-B based magnet includes providing at least one sintered R-T-B based magnet material (where R is a rare-earth element and T is Fe or Fe and Co); providing RH diffusion sources that include a heavy rare-earth element RH (which is Dy and/or Tb) and 30 to 80 mass % of Fe and that have a particle size between 53 μm and 5600 μm; arranging the magnet material and the RH diffusion sources in a process vessel so that some of the RH diffusion sources are in contact with the magnet material; performing an RH diffusion process by heat treating in an inert ambient at a pressure of 5000 Pa or less and at a temperature of 800° C. to 1000° C.; and separating the RH diffusion sources from the magnet material.', '制造烧结的R-T-B基磁体的方法包括提供至少一种烧结的R-T-B基磁体材料（其中R是稀土元素，T是Fe或Fe和Co）;提供RH扩散源，其包括重稀土元素RH（其为Dy和/或Tb）和30至80质量％的Fe并且具有53μm至5600μm的粒径;将磁体材料和RH扩散源布置在处理容器中，使得一些RH扩散源与磁体材料接触;通过在惰性环境中在5000Pa或更低的压力和800℃至1000℃的温度下进行热处理来进行RH扩散过程。并且将RH扩散源与磁体材料分离。', 'US13/977125', 1326902400, 'US9484151B2', 1477929600, 1384358400, NULL, 1477929600, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, '2011009186', 'JP', 1295366400, 10, 10, NULL, NULL, 11, 0, 0, 0, 5, NULL, '869', NULL, 'YANG, JIE', 'SU, XIAOWEI', 'JP1988219548A | JP2004296973A | JP2006303197A | JP2007258455A | JP2009194262A | US20080006345A1 | US20080223489A1 | US20080286595A1 | US20090252865A1 | US20090297699A1 | US20130087248A1', NULL, 'English translation of Official Communication issued in corresponding International Application PCT/JP2012/051032, mailed on Aug. 1, 2013. cited by applicant | Machine translation of JP2006-303197A, Nov. 2006. cited by examiner | Official Communication issued in International Patent Application No. PCT/JP2012/051032, mailed on Apr. 24, 2012. cited by applicant. | Translation of JP2004-296973A, Oct. 2004. cited by examiner | Translation of JP2009-194262A, Aug. 2009. cited by examiner', 1, '\\20220510\\6b557948c86e425785f7b91c7eb94a8c.png', NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 39638, 39640, 39639, 11);
INSERT INTO `os_patent` VALUES (23202, 'R-T-B sintered magnet', 'R-T-B烧结磁铁', 'US9837193B2', 'This sintered R-T-B based rare-earth magnet includes: R2Fe14B type compound crystal grains, including a light rare-earth element RL (which includes at least one of Nd and Pr) as a major rare-earth element R, as main phases; and a heavy rare-earth element RH (which includes at least one of Dy and Tb). Before its surface region is removed, the sintered R-T-B based rare-earth magnet has no layer including the rare-earth element R at a high concentration in that surface region. The sintered R-T-B based rare-earth magnet has a portion in which coercivity decreases gradually from its surface region toward its core portion. The difference in the amount of TRE between a portion of the sintered R-T-B based rare-earth magnet that reaches a depth of 500 μm as measured from its surface region toward its core portion and the core portion of the sintered R-T-B based rare-earth magnet is 0.1 through 1.0.', '该RTB系烧结稀土类磁铁含有：R  2  Fe  14  B型复合晶粒，包括轻稀土元素RL（包括Nd中的至少一种）和Pr）作为主要的稀土元素R，作为主要相;和重稀土元素RH（包括Dy和Tb中的至少一种）。在去除其表面区域之前，烧结的R-T-B基稀土磁体在该表面区域中没有包含高浓度的稀土元素R的层。烧结的R-T-B系稀土类磁铁的矫顽力从表面区域向芯部逐渐减少。从表面区域朝向其核心部分测量的RTB基稀土磁体的部分达到500μm的深度与RTB基稀土磁体的核心部分之间的TRE量的差异是0.1到1.0。', 'US13/980133', 1326902400, 'US9837193B2', 1512403200, 1383753600, NULL, 1512403200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, '2011008434', 'JP', 1295366400, 9, 9, NULL, NULL, 11, 0, 0, 0, 2, NULL, '869', NULL, 'SU, XIAOWEI', NULL, 'CN101375352A | JP2004296973A | US20060213584A1 | US20080286595A1 | US20090297699A1 | US20100231338A1 | US20120025651A1 | US20120112863A1 | US20120176211A1 | US20130087248A1 | WO2009107397A1', NULL, 'English translation of Official Communication issued in corresponding International Application PCT/JP2012/051038, dated Aug. 1, 2013. cited by applicant | Official Communication issued in International Patent Application No. PCT/JP2012/051038, dated Apr. 24, 2012. cited by applicant.', 1, '\\20220510\\a36ccc4864534e019e38ed12713f2f9c.png', NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 39641, 39643, 39642, 9);
INSERT INTO `os_patent` VALUES (23203, 'R-T-B系焼結磁石', 'R-T-B系焼结磁石', 'JP5929766B2', 'このＲ−Ｔ−Ｂ系希土類焼結磁石は、軽希土類元素ＲＬ（ＮｄおよびＰｒの少なくとも１種を含む）を主たる希土類元素Ｒとして含有するＲ2Ｆｅ14Ｂ型化合物結晶粒を主相として有し、重希土類元素ＲＨ（Ｄｙ、Ｔｂの少なくとも１種を含む）を含有するＲ−Ｆｅ−Ｂ系希土類焼結磁石であって、前記Ｒ−Ｔ−Ｂ系希土類焼結磁石の表層を除去する前において、Ｒ−Ｔ−Ｂ系希土類焼結磁石の表層に希土類元素Ｒの濃縮層を有さず、かつＲ−Ｔ−Ｂ系希土類焼結磁石の表層から中心部に向かって、保磁力が漸減する部位を有し、前記Ｒ−Ｔ−Ｂ系希土類焼結磁石の表層から中心部に向かって５００μｍまでのＴＲＥ量と前記Ｒ−Ｔ−Ｂ系希土類焼結磁石の中心部のＴＲＥ量との差が０．１以上１．０以下である。', '该R-B基稀土烧结磁体具有R2FE14B型化合物晶粒,其含有至少一种小型稀土元素R1(包括ND和PR中的至少一种)作为主阶段,重稀土地球R-FE-基于B基稀土烧结磁铁,其包含至少一种元素RH(Dy,Tb),并在去除基于RTB的稀土烧结磁体的表面之前。-TB相关地球烧结磁体烧结磁体的表面不会具有浓缩的稀土元素R的浓缩层,矫顽力从基于RTB的射线烧结磁体的表面逐渐减小到中心。RE的量与RTB中央部分的TRE之间的差异基于RTB的稀土烧结磁体的表面朝向中央部分和RTB的灌溉磁铁的中央部分的TRE的量为500μm的稀土烧结磁体,其为1或更大,1.0或更低。', 'JP2012553762', 1326902400, 'JP5929766B2', 1465315200, 1404057600, NULL, 1463068800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 20, 1, 0, 0, 0, NULL, NULL, NULL, '2011008434', 'JP', 1295366400, 9, 9, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '堀 拓也', NULL, 'JP2004296973A | JP2009289994A | WO2007102391A1 | WO2009107397A1 | WO2010109760A1 | WO2011004894A1', NULL, NULL, 1, '\\20220510\\0042df86a8be4e44b5133288704b8918.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 39641, 39643, 39642, 9);
INSERT INTO `os_patent` VALUES (23204, 'R-T-B系焼結磁石の製造方法', 'R-T-B基烧结磁体的制备方法', 'JP5880448B2', '本発明のＲ−Ｔ−Ｂ系焼結磁石の製造方法は、少なくとも１つのＲ−Ｔ−Ｂ系焼結磁石素材（Ｒは希土類元素、ＴはＦｅまたはＦｅとＣｏ）を準備する工程と、重希土類元素ＲＨ（Ｄｙおよび／またはＴｂ）および３０質量％以上８０質量％以下のＦｅを含有し、各々の粒径が５３μｍ超５６００μｍ以下の複数のＲＨ拡散源を準備する工程と、Ｒ−Ｔ−Ｂ系焼結磁石素材、およびＲＨ拡散源を処理容器内に配置する配置工程であって、ＲＨ拡散源の幾つかをＲ−Ｔ−Ｂ系焼結磁石素材に接触させる配置工程と、処理容器内においてＲＨ拡散源の幾つかが接触した状態のＲ−Ｔ−Ｂ系焼結磁石素材、ならびにＲ−Ｔ−Ｂ系焼結磁石素材に接触するＲＨ拡散源および接触していないＲＨ拡散源に対して、圧力５０００Ｐａ以下の不活性雰囲気下、８００℃以上１０００℃以下の温度で熱処理を行うＲＨ拡散工程と、Ｒ−Ｔ−Ｂ系焼結磁石素材からＲＨ拡散源を離間させる分離工程とを含む。', '用于制备本发明的R-T-B基烧结磁体的方法制备至少一个R-T-B基烧结磁体材料(R是稀土元素,T是Fe或Fe和Co);制备多个RH扩散的步骤源极稀土元素RH(DY和/或Tb)和30质量%以上且80重量%或更少的来源,并制备粒径为53μm或更小和RT的多个RH扩散源 -基于BB的烧结磁体材料和RH扩散源在加工容器中排列步骤,以及用于接触一些RH扩散源的布置过程,以使REB基烧结磁体材料和加工。基于RTB的烧结磁体材料在容器中接触的RH扩散源,以及与基于RTB的烧结磁体材料和非接触RH扩散源接触的RH扩散源是在800℃或更高的温度下进行热处理的分离过程。或更少,以及分离过程,其将RH扩散源与RTB的烧结磁体材料在惰性气氛下分离,压力为5000Pa或更小。包括。', 'JP2012553761', 1326902400, 'JP5880448B2', 1457452800, 1404057600, NULL, 1455206400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 17, 1, 0, 0, 0, NULL, NULL, NULL, '2011009186', 'JP', 1295366400, 10, 10, NULL, NULL, 10, 0, 0, 0, 0, NULL, NULL, NULL, '堀 拓也', NULL, 'JP1988192206A | JP1988219548A | JP2006303197A | JP2007258455A | JP2008263179A | JP2009289994A | JP2015103799A | WO2006064848A1 | WO2007102391A1 | WO2008032426A1', NULL, NULL, 1, '\\20220510\\8dba5d07ac774d6c8a4050a2bda76a16.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 39638, 39640, 39639, 11);
INSERT INTO `os_patent` VALUES (23205, 'Method of producing r-t-b sintered magnet', 'r-t-b烧结磁铁的制造方法', 'EP2667391B1', 'A method for producing a sintered R-T-B based magnet according to the present invention includes the steps of: providing at least one sintered R-T-B based magnet material (where R is a rare-earth element and T is Fe or Fe and Co); providing RH diffusion sources, each of which includes a heavy rare-earth element RH (which is Dy and/or Tb) and 30 to 80 mass% of Fe and has a particle size of more than 53 µ m and equal to or smaller than 5600 µ m; performing an arrangement process to arrange the magnet material and the RH diffusion sources in a process vessel so that some of the RH diffusion sources are in contact with the magnet material; performing an RH diffusion process by carrying out a heat treatment in an inert ambient at a pressure of 5000 Pa or less and at a temperature of 800 °C to 1000 °C in the process vessel on the magnet material, with which some of the RH diffusion sources are in contact, and on the RH diffusion sources which are in contact, and out of contact, with the magnet material; and performing a separation process to separate the RH diffusion sources from the magnet material.', '根据本发明的制造烧结R-T-B基磁体的方法包括以下步骤：提供至少一种烧结的R-T-B基磁体材料（其中R是稀土元素，T是Fe或Fe和Co）;提供RH扩散源，每个RH扩散源包括重稀土元素RH（其为Dy和/或Tb）和30至80质量％的Fe并且具有大于53μm且等于或小于的粒径。 5600微米;执行布置工艺以将磁体材料和RH扩散源布置在处理容器中，使得一些RH扩散源与磁体材料接触;通过在惰性环境中在5000Pa或更低的压力和800℃至1000℃的温度下在磁体材料上的处理容器中进行热扩散处理来进行RH扩散处理，其中一些RH扩散源接触，并且在与磁体材料接触和不接触的RH扩散源上;并执行分离过程以将RH扩散源与磁体材料分离。', 'EP2012736976', 1326902400, 'EP2667391B1', 1552406400, 1385481600, NULL, 1552406400, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 22, 1, 0, 0, 0, NULL, NULL, NULL, '2011009186', 'JP', 1295366400, 10, 10, NULL, NULL, 10, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, 'JP1988219548A | JP2006303197A | JP2007102391A | JP2007258455A | JP2008263179A | JP2009289994A | US20080006345A1 | WO2006064848A1 | WO2007102391A1 | WO2008032426A1', NULL, NULL, 1, '\\20220510\\4e2cd779f29b4eacbe291ab16b137268.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, '有效:DE | 失效:RS,NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,SE,SI,MC,SK,SM,GB,IE,EE,CH,IS,IT,GR,AL,ES,AT,CZ,PL,RO,LI,TR,NL | 未确认:HU,MK,MT,CY', 39638, 39640, 39639, 11);
INSERT INTO `os_patent` VALUES (23206, 'VERFAHREN ZUR HERSTELLUNG EINES R-T-B-SINTERMAGNETEN', '制造R-T-B烧结磁体的方法', 'DE602012057748T2', 'This method of producing an R-T-B sintered magnet involves: a step for preparing at least one R-T-B sintered magnet material (R is a rare earth element, T is Fe or Fe and Co); a step for preparing multiple RH diffusion sources having a heavy rare earth element RH (Dy and/or Tb) and 30-80 mass% Fe and with particle diameters of over 53μm but not more than 5600μm; a step for arranging the R-T-B sintered magnet material and the RH diffusion sources in a processing vessel, wherein several of the RH diffusion sources are brought into contact with the R-T-B sintered magnet material; an RH diffusion step for heat-treating in the processing vessel at 800-1000°C in an inert atmosphere under a pressure of 5000 Pa or less the R-T-B sintered magnet material in a state in contact with several RH diffusion sources, the RH diffusion sources in contact with the R-T-B sintered magnet material, and the RH diffusion sources not in contact therewith; and a separation step for separating the RH diffusion sources from the R-T-B sintered magnet material.', '这种制备R-T-B烧结磁体的方法包括：制备至少一种R-T-B烧结磁体材料的步骤（R是稀土元素，T是Fe或Fe和Co）;制备具有重稀土元素RH（Dy和/或Tb）和30-80质量％Fe且粒径超过53μm但不大于5600μm的多个RH扩散源的步骤;将R-T-B烧结磁体材料和RH扩散源布置在处理容器中的步骤，其中几个RH扩散源与R-T-B烧结磁体材料接触; RH扩散步骤，用于在800-1000℃的惰性气氛中，在5000Pa或更低的压力下，在处理容器中进行热处理，RTB烧结磁体材料处于与几个RH扩散源接触的状态，RH扩散源与RTB烧结磁体材料接触，并且RH扩散源不与其接触;用于将RH扩散源与R-T-B烧结磁体材料分离的分离步骤。', 'DE602012057748', 1326902400, 'DE602012057748T2', 1552406400, 1552406400, NULL, 1552406400, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 35, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 39644, 39640, 39645, 11);
INSERT INTO `os_patent` VALUES (23207, 'R-T-B系焼結磁石の製造方法', 'R-T-B基烧结磁体的制备方法', 'JP5163839B2', '粗粉砕工程Ａにおける回収工程が、回収室４０にて行なわれ、回収室４０には、不活性ガス導入手段４２と、真空排気手段４３と、搬入口と、回収室４０の下部に配置される排出口４０ａと、回収容器６０とを有し、回収工程では、処理容器５０を処理室から回収室４０内へ搬入口より搬入する搬入工程と、回収室４０内を減圧した後に処理容器５０内の粗粉砕粉を回収室４０内に排出する排出工程と、不活性ガス導入手段４２によって回収室４０内に不活性ガスを導入するガス導入工程と、排出口４０ａから粗粉砕粉を回収容器６０に回収する合金収容工程とを有し、混合工程における粉砕助剤の添加を、冷却工程後の回収工程での合金収容工程において行い、水素粉砕した後の粗粉砕粉の回収室での残留を少なくし、Ｒ−Ｔ−Ｂ系焼結磁石の含有酸素量を低減して、磁石特性の向上を図れるＲ−Ｔ−Ｂ系焼結磁石の製造方法を提供する。', '粗破碎步骤A中的回收步骤在回收室40中进行，回收室40设置在回收室40的下部，惰性气体引入装置42，真空排气装置43，装载口和回收室40。在回收步骤中，设置排出口40a和回收容器60，在回收步骤中，处理容器50从处理室从装载口装载到回收室40中，并且回收室40中的压力降低。以及通过惰性气体引入装置42将惰性气体引入回收室40的气体引入步骤，以及用于从出口40a回收粗粉碎粉末的容器60。在混合步骤中添加研磨助剂在冷却步骤之后的回收步骤中的合金保持步骤中进行，并且在氢气粉碎之后剩余在回收室中的粗粉碎粉末中。较少的RTB烧结磁铁通过减少的氧含量，以提供一种制造R-T-B系烧结磁铁的制造方法可以在磁特性得到改善。', 'JP2012544780', 1327507200, 'JP5163839B2', 1363104000, 1363104000, NULL, 1356624000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 27, 3, 0, 0, 0, NULL, NULL, NULL, '2011017846', 'JP', 1296403200, 12, 12, NULL, NULL, 8, 2, 0, 0, 0, NULL, NULL, NULL, '塩▲崎▼ 義晃', NULL, 'JP1994346102A | JP1997053887A | JP2001289400A | JP2005082891A | JP2005118625A | JP2006286859A', 'JP2012158792A | JP5699637B2', NULL, 1, '\\20220510\\cd74d8574a874ea4a9f72c99dc40309e.png', NULL, NULL, 1, NULL, NULL, 13, NULL, NULL, NULL, 39646, 39648, 39647, 13);
INSERT INTO `os_patent` VALUES (23208, '발명의 명칭 R－T－B계 소결자석의 제조방법', '发明名称R-T-B系统烧结磁铁的制造方法', 'KR101522805B1', '조분쇄 공정(A)에 있어서의 회수 공정이, 회수실(40)에서 행해지고, 회수실(40)에는, 불활성 가스 도입 수단(42)과, 진공 배기 수단(43)과, 반입구와, 회수실(40) 하부에 배치되는 배출구(40a)와, 회수 용기(60)를 가지며,회수 공정에서는, 처리 용기(50)를 처리실로부터 회수실(40) 내로 반입구에서 반입하는 반입 공정과, 회수실(40)내를 감압한 후에 처리 용기(50) 내의 조분쇄 분말을 회수실(40) 내로 배출하는 배출 공정과, 불활성 가스 도입수단(42)에 의하여 회수실(40) 내로 불활성 가스를 도입하는 가스 도입 공정과, 배출구(40a)로부터 조분쇄 분말을 회수 용기(60)에 회수하는 합금 수용 공정을 가지고, 혼합 공정에 있어서의 분쇄 조제의 첨가를, 냉각 공정후의 회수 공정으로의 합금 수용 공정에서 행하고, 수소 분쇄한 후의 조분쇄 분말의 회수실에서의 잔류를 적게하고, R－T－B계 소결자석의 함유 산소량을 저감하며, 자석 특성의 향상을 도모할 수 있는 R－T－B계 소결자석의 제조방법을 제공한다.', '颚式破碎过程（A）中的回收过程在返回室（40）中进行，并且它具有设置在惰性气体引入装置（42）下部的排气口（40a）和真空排气装置（43），在返回室（40）中进口stomodaeum，返回室（40）和回收容器（60）并且具有从返回室（40）内的处理室运送处理池（50）的取出过程在进口出口和抽真空步骤中，在减压返回室（40）的压力和气体引入过程中，在返回室（40）内喷射颚式破碎粉末在回收室（40）内具有惰性气体引入装置（42）的惰性气体和在回收过程中从回收容器（60）中的通风口（40a）收集颚式破碎粉末的合金接收处理在冷却过程后的合金接收 - 处理过程中，在混合过程中添加助磨剂，并将残留物写入颚式破碎粉末的返回室，并将其打碎成碎片，降低其含量R-T-B族烧结磁铁的氧气，提供R-T-B族烧结磁铁的制造方法，计划改进磁铁特性。', 'KR1020137023110', 1327507200, 'KR101522805B1', 1432569600, 1389542400, NULL, 1431878400, '韩国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 31, 3, 0, 0, 0, NULL, NULL, NULL, '2011017846', 'JP', 1296403200, 12, 12, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP1994346102A | JP2003082406A | JP2005082891A | JP2005118625A | JP2006286859A', NULL, NULL, 1, '\\20220510\\909a0573347e4aef86d360c3512d5e5f.png', NULL, NULL, 1, NULL, NULL, 13, NULL, NULL, NULL, 39646, 39648, 39647, 13);
INSERT INTO `os_patent` VALUES (23209, 'Producing method of R-T-B-based sintered magnet', 'R-T-B系烧结磁铁的制造方法', 'US10056188B2', 'The present invention provides a producing method of R-T-B-based sintered magnets in which, the recovery chamber 40 includes inert gas introducing means 42, evacuating means 43, a carry-in port, a discharge port 40a, and a recovery container 60. The recovery step includes a carrying-in step of conveying a processing container 50 into the recovery chamber 40, a discharging step of discharging coarsely pulverized powder in the processing container 50 into the recovery chamber 40, a gas introducing step of introducing inert gas into the recovery chamber 40, and an alloy accommodating step of recovering the coarsely pulverized powder into the recovery container 60. Addition of pulverization aid is carried out in the alloy accommodating step. A remaining amount of coarsely pulverized powder in the recovery chamber 40, an oxygen-containing amount of the R-T-B-based sintered magnet is reduced, and magnetic properties are enhanced.', '本发明提供一种RTB系烧结磁体的制造方法，其中，回收室 40包括惰性气体导入装置 42 ，抽空装置 43 ，运入口，排放口 40 和回收容器 60 。回收步骤包括将处理容器 50 输送到回收室中的输入步骤 40，在处理容器中排出粗粉碎粉末的排出步骤 50 进入回收室 40 ，将惰性气体引入回收室 40的气体引入步骤，以及回收粗粉碎粉末的合金容纳步骤进入回收容器 60 。在合金容纳步骤中进行粉碎助剂的添加。在回收室中剩余量的粗粉碎粉末，含氧量的R-T-B基烧结磁体减少，并且磁性能增强。', 'US13/980944', 1327507200, 'US10056188B2', 1534780800, 1384963200, NULL, 1534780800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 27, 3, 0, 0, 0, NULL, NULL, NULL, '2011017846', 'JP', 1296403200, 12, 12, NULL, NULL, 12, 0, 0, 0, 3, NULL, '875', NULL, 'KASTLER, SCOTT R', 'LUK, VANESSA T.', 'CN1272809A | CN1272809C | DE10119772A1 | EP1189244A2 | JP2005118625A | JP2006286859A | JP2011214044A | US6080245A | US6491765B2 | US7141126B2 | US8979973B2 | WO2011013489A1', NULL, 'Chinese Office Action dated Sep. 30, 2014 in the corresponding Chinese patent application No. 201280006946.8. cited by applicant | Extended European Search Report for counterpart EPC Patent Application No. 12742724.3 dated Jan. 19, 2018 (8 Sheets). cited by applicant. | International Search Report for International Application No. PCT/JP2012/051620 dated May 1, 2012. cited by applicant', 1, '\\20220510\\55c4c3f270124f35873151c75d701290.png', NULL, NULL, 1, NULL, NULL, 13, NULL, NULL, NULL, 39646, 39648, 39647, 13);
INSERT INTO `os_patent` VALUES (23210, 'Method for producing r-t-b system sintered magnet', 'r-t-b系烧结磁铁的制造方法', 'EP2671958B1', 'The present invention provides a producing method of R-T-B-based sintered magnets in which, the recovery chamber 40 includes inert gas introducing means 42, evacuating means 43, a carry-in port, a discharge port 40a, and a recovery container 60. The recovery step includes a carrying-in step of conveying a processing container 50 into the recovery chamber 40, a discharging step of discharging coarsely pulverized powder in the processing container 50 into the recovery chamber 40, a gas introducing step of introducing inert gas into the recovery chamber 40, and an alloy accommodating step of recovering the coarsely pulverized powderinto the recovery container 60. Addition of pulverization aid is carried out in the alloy accommodating step. A remaining amount of coarsely pulverized powder in the recovery chamber 40, an oxygen-containing amount of the R-T-B-based sintered magnet is reduced, and magnetic properties are enhanced.', '本发明提供一种RTB系烧结磁体的制造方法，其中，回收室40包括惰性气体导入装置42，抽空装置43，运入口，排出口40a和回收容器60。步骤包括将处理容器50输送到回收室40中的输入步骤，将处理容器50中的粗粉碎粉末排放到回收室40中的排出步骤，将惰性气体引入回收室的气体引入步骤如图40所示，合金容纳步骤是将粗粉碎的粉末回收到回收容器60中。在合金容纳步骤中进行粉碎助剂的添加。在回收室40中剩余量的粗粉碎粉末，含氧量的R-T-B基烧结磁体减少，并且磁性能增强。', 'EP2012742724', 1327507200, 'EP2671958B1', 1617724800, 1386691200, NULL, 1617724800, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 36, 3, 0, 0, 0, NULL, NULL, NULL, '2011017846', 'JP', 1296403200, 12, 12, NULL, NULL, 8, 0, 0, 0, 1, NULL, '874', NULL, NULL, NULL, 'DE10119772A1 | EP1189244A2 | JP2005118625A | JP2006286859A | JP2011214044A | WO2011013489A1', NULL, 'Powder Technology Poket Book,Kogyo Chosakai Publishing Co., Ltd', 1, '\\20220510\\3cc496d53e1b45d48020df1ad05830e4.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, '有效:DE,BE,LU,FR,MC,GB,IE,CH,LI | 失效:RS,NO,FI,PT,BG,DK,LT,LV,HR,SE,SK,SM,EE,IS,GR,ES,AT,CZ,PL,RO,NL | 未确认:HU,SI,MK,MT,IT,AL,CY,TR', 39646, 39648, 39647, 13);
INSERT INTO `os_patent` VALUES (23211, 'VERFAHREN ZUR HERSTELLUNG EINES GESINTERTEN R-T-B-MAGNETEN', '制造烧结R-T-B磁体的方法', 'DE602012075111T2', 'Provided is a method for producing an R-T-B system sintered magnet, wherein a recovery step in a coarse grinding step (A) is carried out in a recovery chamber (40) which is provided with an inert gas introduction means (42), a vacuum evacuation means (43), a carry-in port, a discharge port (40a) that is arranged at a lower part of the recovery chamber (40), and a recovery container (60). The recovery step comprises: a carry-in step wherein a process container (50) is carried into the recovery chamber (40) from a process chamber through the carry-in port; a discharge step wherein a coarsely ground powder within the process container (50) is discharged into the recovery chamber (40) after reducing the pressure within the recovery chamber (40); a gas introduction step wherein an inert gas is introduced into the recovery chamber (40) by the inert gas introduction means (42); and an alloy recovery step wherein the coarsely ground powder is recovered in the recovery container (60) through the discharge port (40a). Addition of a grinding assistant in a mixing step is carried out in the alloy recovery step in the recovery step after a cooling step, so that the coarsely ground powder remaining in the recovery chamber after hydrogen pulverization is reduced. Consequently, the amount of oxygen contained in an R-T-B system sintered magnet is reduced, thereby improving the magnet characteristics.', '本发明提供一种RTB系烧结磁铁的制造方法，其中粗磨步骤（A）中的回收步骤在回收室（40）中进行，回收室（40）设有惰性气体导入装置（42），真空排气装置（43），输入口，设置在回收室（40）下部的排出口（40a）和回收容器（60）。回收步骤包括：运入步骤，其中处理容器（50）从处理室通过运入口被运送到回收室（40）中;排出步骤，其中在降低回收室（40）内的压力之后，将处理容器（50）内的粗磨粉末排出到回收室（40）中;气体导入步骤，其中惰性气体通过惰性气体引入装置（42）引入回收室（40）;合金回收步骤，其中粗磨粉末通过排出口（40a）回收在回收容器（60）中。在冷却步骤之后，在回收步骤中的合金回收步骤中，在混合步骤中添加研磨助剂，使得在氢粉碎之后残留在回收室中的粗磨粉末减少。因此，R-T-B系烧结磁铁中含有的氧量减少，从而改善了磁铁特性。', 'DE602012075111', 1327507200, 'DE602012075111T2', 1617724800, 1617724800, NULL, 1617724800, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 60, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '855', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 13, NULL, NULL, NULL, 39649, 39648, 39650, 13);
INSERT INTO `os_patent` VALUES (23212, '表面処理用治具', '表面处理夹具', 'JP5799837B2', '【課題】 希土類系永久磁石などの被処理物の表面に金属蒸着被膜を形成する際などに被処理物を収容して使用する表面処理用治具であって、被処理物の表面に蒸着形成された金属被膜が傷ついたり、被処理物自体の割れや欠けが生じたりすることを効果的に防ぐことができるとともに、被処理物の出し入れが容易な表面処理用治具を提供すること。\n\n【解決手段】 線状部材を隙間を存して巻回してなるスプリング状の筒状体に被処理物を収容して表面処理を行うための表面処理用治具であって、筒状体の一方の端部は、少なくとも筒状体の内部側の端面が渦巻線状面に形成されたスプリング体が配されることで封止されており、他方の端部は開口していて、そこから被処理物を収容した後、少なくとも筒状体の内部側の端面が渦巻線状面に形成されたスプリング体を蓋体として嵌合することで封止されるようにしてなることを特徴とする。\n\n【選択図】 図1', '摘要：要解决的问题：提供一种表面处理夹具，用于在物体表面形成金属沉积涂层时，用于容纳待处理物体，如稀土永磁体，其中形成金属涂层通过在物体表面上的沉积，可以有效地防止受到损坏，或者可以有效地防止物体本身破裂或碎裂，并且容易接收和输送物体。解决方案：用于表面处理的固定装置容纳待处理的物体，该弹簧形圆柱体通过缠绕具有间隙的线性构件以进行表面处理而制备。通过布置弹簧体来密封圆柱体的一端，在弹簧体中，至少圆柱体的内侧上的端面形成为螺旋形线状表面。打开另一端，并且在从其接收物体之后，通过作为盖子装配弹簧体来密封开口端，其中至少圆柱形主体内侧上的端面以螺旋线形成 - 形状的表面。', 'JP2012018253', 1327939200, 'JP5799837B2', 1445961600, 1376496000, NULL, 1441296000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 10, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '伊藤 光貴', NULL, 'EP0992605A2 | EP1172177A1 | JP1995070738A | JP2000169964A | JP2002088467A | JP2003166057A', NULL, NULL, 1, '\\20220510\\860ff6d50e094cd4b717dcdbadbd13a8.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39651, 39653, 39652, 2);
INSERT INTO `os_patent` VALUES (23213, '電気ニッケルめっき液中の希土類不純物の除去方法', '去除电镀镍溶液中稀土杂质的方法', 'JP5835001B2', '【課題】希土類磁石をめっきする場合にめっき不良の原因となるめっき液に溶解した希土類磁石の成分を除去する簡便な方法を提供する。\n\n【解決手段】希土類不純物が溶解した電気ニッケルめっき液を加温用熱交換器7で80℃以上に加温し希土類不純物を析出物とする。更に加温しためっき液をめっき処理する温度まで冷却用熱交喚器8で冷却した後、濾過器9濾過することで希土類不純物の析出物を分離除去する。希土類不純物を分離除去しためっき液をめっき槽4に戻し、めっき処理を行う。\n\n【選択図】図1', '要解决的问题：提供一种简单的方法，用于去除溶解在电镀液中的稀土磁体的组分，当稀土磁体电镀时会导致电镀缺陷。\n\n溶液：通过用于加热的热交换器7将溶解有稀土杂质的电镀镍溶液加热至80℃或更高，以获得作为沉淀物的稀土杂质。此外，通过冷却热发生器8将加热的电镀溶液冷却至电镀液的电镀温度以进行冷却，然后通过过滤器9过滤分离并除去稀土杂质的沉淀物。将已经分离和除去稀土杂质的电镀液返回到电镀槽4中并进行电镀处理。\n\n点域1', 'JP2012039760', 1330272000, 'JP5835001B2', 1450886400, 1378310400, NULL, 1447344000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 7, 0, 0, 0, 1, NULL, NULL, NULL, '阿川 寛樹', NULL, 'JP1979089904A | JP1985145400A | JP1990209500A | JP1995062600A | JP2006077271A | JP2011184734A | JP2012229483A', NULL, 'Linyan Li et al.,Recovery of Ni, Co and rare earths from spent Ni-metal hydride batteries and proparation of spherical Ni(OH)2,Hydrometallurgy,米国,Elsevier,2009年10月 7日,100,41-46', 1, '\\20220510\\1abf52a9f1e84290b0ee828a0e9d031d.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39654, 39656, 39655, 2);
INSERT INTO `os_patent` VALUES (23214, 'R-T-B系永久磁石の製造方法', 'R-T-B系永久磁石の制造方法', 'JP5906874B2', '【課題】HDDR法を用いて良好な角型性と高い保磁力を有するR-T-B系永久磁石を提供する。\n\n【解決手段】  50%体積中心粒径が1μm以上10μm未満であり、R2T14B相を含むR-T-B系合金(RはNdおよび/またはPrを50原子%以上含む希土類元素、TはFe、またはFeとCo)の粉末を用意する。この粉末を成型して圧粉体を作製する。圧粉体を250℃以上600℃以下の温度の水素雰囲気中で熱処理を施す第一熱処理工程と、圧粉体に対し、650℃以上1000℃以下の水素雰囲気中で熱処理を施す第二熱処理工程と、圧粉体に対し、650℃以上1000℃以下の真空または不活性雰囲気中で熱処理を施す第三熱処理工程とを実行する。第一熱処理工程終了時から第二熱処理工程の開始時までの昇温は、真空または不活性雰囲気中で行う。\n\n【選択図】図1', '要解决的问题：通过使用HDDR方法提供具有良好的矩形度和高矫顽力的R-T-B型永磁体。\n\n含有50％体积中心粒径为1μm以上且小于10μm且含有R  2  T  14  B相的RTB合金（R为Nd和/制备含有50原子％或更多的Pr的稀土元素，并且T是Fe或Fe和Co）。将该粉末成型以制备生坯。将生坯在高于或等于250℃且低于或等于600℃的温度下在氢气氛中进行热处理的第一热处理步骤和在650℃或更高且1000℃或更低的氢气氛中对生坯进行热处理的第二热处理步骤以及第三热处理步骤，使生坯在真空或惰性气氛中在650℃至1000℃（包括150℃和1000℃）下进行热处理。从第一热处理步骤结束到第二热处理步骤开始的温度升高在真空或惰性气氛中进行。\n\n点域1', 'JP2012068867', 1332691200, 'JP5906874B2', 1461081600, 1352304000, NULL, 1459440000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 23, 2, 0, 0, 0, NULL, NULL, NULL, '2011070494', 'JP', 1301241600, 2, 2, NULL, NULL, 10, 0, 0, 0, 0, NULL, NULL, NULL, '小林 大介', NULL, 'JP1989132106A | JP1990004901A | JP1992253304A | JP1997148163A | JP1999158588A | JP2001076917A | JP2002075715A | JP2008127648A | JP2009283568A | WO2007135981A1', NULL, NULL, 1, '\\20220510\\ca66220a4e504c0ab9dd090c8e6baf84.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39657, 39659, 39658, 2);
INSERT INTO `os_patent` VALUES (23215, 'R-T-B系永久磁石の製造方法', 'R-T-B系永久磁石の制造方法', 'JP5906876B2', '【課題】HDDR法を用いて良好な角型性と高い保磁力を有するR-T-B系永久磁石を提供する。\n\n【解決手段】50%体積中心粒径が1μm以上10μm未満であり、R2T14B相を含むR-T-B系合金粉末(RはNdおよび/またはPrを50原子%以上含む希土類元素、TはFe、またはFeとCo)と、粒径75μm未満のR’(R’はNd、Pr、Dy、Tbから選ばれる1種以上)、またはR’-M系合金(MはAl、Ga、Cu、Co、Ni、Cr、Fe、Si、Geから選ばれる1種以上)の粉末との混合粉末の圧粉体を200℃以上600℃以下の水素雰囲気中で熱処理を施す第一熱処理工程と、圧粉体に対し水素雰囲気中で650℃以上1000℃以下の温度で熱処理を施す第二熱処理工程と、真空または不活性雰囲気中で圧粉体に対し650℃以上1000℃以下の温度で熱処理を施す第三熱処理工程とを実行する。\n\n【選択図】図1', '要解决的问题：通过使用HDDR方法提供具有良好的矩形度和高矫顽力的R-T-B型永磁体。\n\n一种RTB合金粉末，其体积中心粒径为50％，1μm以上且小于10μm，含有R  2  T  14  B相（R为Nd和/或者，含有50原子％或更多的Pr，T的稀土元素是Fe或Fe和Co），并且R\'（R\'是选自Nd，Pr，Dy和Tb中的一种或多种），其粒径小于75μm，或者R \' -  M合金（M是选自Al，Ga，Cu，Co，Ni，Cr，Fe，Si和Ge中的一种或多种）粉末在高于或等于200℃且低于或等于600℃的温度下加热。将生坯在氢气氛中进行热处理的第一热处理步骤，在160℃至1000℃的温度下在氢气氛中对生坯进行热处理的第二热处理步骤，并且进行在高于或等于650℃且低于或等于1000℃的温度下进行热处理的第三热处理步骤。\n\n点域1', 'JP2012070560', 1332777600, 'JP5906876B2', 1461081600, 1352304000, NULL, 1459440000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 42, 2, 0, 0, 0, NULL, NULL, NULL, '2011071313', 'JP', 1301328000, 2, 2, NULL, NULL, 12, 0, 0, 0, 1, NULL, NULL, NULL, '小林 大介', NULL, 'JP1989132106A | JP1990004901A | JP1992253304A | JP1997148163A | JP1999158588A | JP2001076917A | JP2002075715A | JP2005097711A | JP2008127648A | JP2009283568A | WO2004064085A1 | WO2007135981A1', NULL, 'H.Sepehri-Amin,T.Ohkubo,T.Nishiuchi,S.Hirosawa,K.Hono,Scripta Materialia vol.63 pp.1124-1127(2010)', 1, '\\20220510\\a19b3cba7c3f48e8b0f0f49f4e82e437.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, NULL, 39660, 39662, 39661, 2);
INSERT INTO `os_patent` VALUES (23216, '希土類元素の回収方法', '回收稀土元素的方法', 'JP5853815B2', '【課題】低コストで簡易なリサイクルシステムとして実用化が可能な、少なくとも希土類元素と鉄族元素を含む処理対象物から希土類元素を回収する方法を提供する。\n\n【解決手段】酸化した処理対象物を、窒化ホウ素の存在下、1200℃以上の温度で熱処理することで、希土類元素を酸化物として鉄族元素から分離する工程を少なくとも含んでなる。希土類元素の酸化物、鉄族元素は高温で窒化ホウ素と反応することなくそれぞれそのままで溶融するのに対し、鉄族元素の酸化物は高温で窒化ホウ素と反応することで鉄族元素に還元されて溶融し、結果として、希土類元素の酸化物の溶融物と鉄族元素の溶融物を分離できる。酸化した処理対象物が、処理対象物に対して、熱処理、燃焼処理、アルカリを用いた黒色酸化処理から選択される少なくとも1つである。\n\n【選択図】図3', '摘要：要解决的问题：提供一种从加工对象中回收稀土元素的方法，至少包括稀土元素和铁族元素，可以低成本和简单地投入实际使用回收系统。解决方案：用于回收稀土元素的方法至少包括通过使已经氧化的处理对象在1200℃的温度下进行热处理而将作为氧化物的稀土元素与铁族元素分离的步骤或者以上在氮化硼存在下。当稀土元素和铁族元素的氧化物中的每一种直接熔化而不与高温下的氮化硼反应时，铁族元素的氧化物通过与氮化硼的反应而还原成铁元素。高温和融化。因此，可以分离稀土元素的氧化物和铁族元素的熔融产物的熔融产物。已经氧化的处理对象通过进行选自热处理，燃烧处理和使用碱的黑色氧化处理中的至少一种处理而获得。', 'JP2012074359', 1332864000, 'JP5853815B2', 1454947200, 1381075200, NULL, 1450368000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 3, 0, 0, 0, 0, NULL, NULL, NULL, '大塚 徹', NULL, 'JP2004068082A | JP2009249674A | WO2007119846A1', NULL, NULL, 1, '\\20220510\\f18e71c2d5234ebeae6eb876db4cff34.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39663, 39665, 39664, 2);
INSERT INTO `os_patent` VALUES (23217, '希土類元素の金属および合金の製造方法', '生产稀土元素金属和合金的方法', 'JP5853826B2', '【課題】 一般的な電解処理条件よりも低い温度、かつ、低い印加電圧で、効率よく電解処理を行うことができる、溶融塩電解法による希土類元素の金属や合金を製造する方法を提供すること。\n\n【解決手段】 希土類元素のフッ化物とフッ化リチウムとフッ化バリウムからなる溶融塩に希土類元素の酸化物と酸化ホウ素を添加し、750〜950℃に加熱して2.5〜4.5Vの電圧を印加することで、希土類元素の金属および/または合金を還元析出させることを特徴とする。\n\n【選択図】 図3', '摘要：要解决的问题：提供一种通过熔盐电解法制造稀土元素金属及其合金的方法，能够在较低温度和较低施加电压下有效地进行电解处理。一般电解处理条件。溶液：通过将稀土元素的氧化物和氧化硼添加到由稀土元素的氟化物，氟化锂和氟化钡构成的熔融盐中，还原性地提取稀土元素和/或其合金的金属。，并在750至950℃加热的同时施加2.5至4.5V的电压。', 'JP2012078931', 1333036800, 'JP5853826B2', 1454947200, 1381334400, NULL, 1450368000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 6, 0, 0, 0, 1, NULL, NULL, NULL, '向井 佑', NULL, 'JP1985077944A | JP1988282287A | JP1998176296A | JP2004068082A | JP3927238B2', NULL, '高橋正雄、増子昇著「工業電解の化学」アグネ社、1979年', 1, '\\20220510\\57b4399e27114f3f9bd3c02646189a4a.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39666, 39668, 39667, 2);
INSERT INTO `os_patent` VALUES (23218, 'R-T-B系焼結磁石の製造方法', 'R-T-B基烧结磁体的制备方法', 'JP6044866B2', '【課題】2合金法において、焼結時の密度不足による磁気特性の低下を防止し、製造コストの増加を招くことなく、安全性に優れる製造方法によって、主相結晶粒の外殻部に重希土類元素RHを濃縮した組織を有し、Brを低下させずにHcJを向上させたR-T-B系焼結磁石を提供する。\n\n【解決手段】軽希土類元素RLまたは軽希土類元素RLと重希土類元素RHからなるR1とBとFeを含む第一合金粉末と、RLとRHからなるR2とBとCoとFeを含み、第一合金粉末よりもRH及びCo含有量が多い第二合金粉末とを、70:30〜97:3の割合で混合し、成形、焼結する。R1の含有量とR2の含有量との差は1以内とする。\n\n【選択図】図1', '要解决的问题：在双合金方法中，提供rtb基烧结磁体的制造方法，防止由于烧结期间密度不足引起的磁特性劣化并且实现优异的安全性而不会导致制造成本增加，制造方法能够改善H  cJ 而不降解B  r 使用具有浓缩重稀土元素RH的纹理在外壳部分中主要相晶粒。溶剂：由轻稀土元素RL或轻稀土元素RL和重稀土元素RH，B和Fe形成的第一合金粉末，包括R  1 由RL和RH，B，Co和Fe形成的并且具有比第一合金粉末更高的RH和Co含量的R  2 的合金粉末以一定的速率混合，成形和烧结70：30-97：3。 R  1 和R  2 的内容之间的差异不大于1。', 'JP2012079304', 1333036800, 'JP6044866B2', 1481644800, 1368028800, NULL, 1480003200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 21, 1, 0, 0, 0, NULL, NULL, NULL, '2011214601', 'JP', 1317225600, 2, 2, NULL, NULL, 11, 0, 0, 0, 0, NULL, NULL, NULL, '久保田 昌晴', NULL, 'JP1994096928A | JP2000188213A | JP2001230107A | JP2005011973A | JP2006295140A | JP2007294917A | JP2010114200A | JP2010150604A | JP2010263172A | WO2006098204A1 | WO2010082492A1', NULL, NULL, 1, '\\20220510\\9508655284e04f2fa48ddd8c744658ea.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 39669, 39671, 39670, 2);
INSERT INTO `os_patent` VALUES (23219, 'R-Fe-B type rare earth sintered magnet and process for production of the same', 'R-Fe-B型稀土烧结磁体及其制造方法', 'US8945318B2', 'In an R—Fe—B based rare-earth sintered magnet according to the present invention, at a depth of 20 μm under the surface of its magnet body, crystal grains of an R2Fe14B type compound have an (RL1-xRHx)2Fe14B (where 0.2≦x≦0.75) layer with a thickness of 1 nm to 2 μm in their outer periphery. In this case, the light rare-earth element RL is at least one of Nd and Pr, and the heavy rare-earth element RH is at least one element selected from the group consisting of Dy, Ho and Tb.', '在根据本发明的R-Fe-B基稀土烧结磁体中，在其磁体表面下20μm的深度处，R  2  Fe 的晶粒14  B型化合物具有（RL  1-x  RH  x ） 2  Fe  14  B （其中0.2≤x≤0.75）层的外周边的厚度为1nm至2μm。在这种情况下，轻稀土元素RL是Nd和Pr中的至少一种，重稀土元素RH是选自Dy，Ho和Tb中的至少一种元素。', 'US13/456250', 1335369600, 'US8945318B2', 1422892800, 1345046400, NULL, 1422892800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 29, 3, 0, 0, 0, NULL, NULL, NULL, '2007174063 | PCT/JP2008/001727', 'JP | WO', 1183305600, 16, 16, NULL, NULL, 8, 0, 0, 0, 1, NULL, '869', NULL, 'YANG, JIE', NULL, 'EP1643513A1 | EP1993112A1 | US20080223489A1 | US20090020193A1 | US20100182113A1 | US20100231338A1 | US20110205006A1 | WO2007102391A1', NULL, 'Yoshimura et al.; \"R-Fe-B Type Rare Earth Sintered Magnet and Process for Production of the Same\"; U.S. Appl. No. 12/666,323, filed Dec. 23, 2009. cited by applicant.', 1, '\\20220510\\41014944a8b0449bb18aa9b4f7dd71be.png', NULL, NULL, 1, NULL, NULL, 14, NULL, NULL, NULL, 39348, 39350, 39349, 19);
INSERT INTO `os_patent` VALUES (23220, '磁力特性算出方法、磁力特性算出装置及びコンピュータプログラム', '磁力特性计算方法，磁力特性计算装置和计算机程序', 'JP6003887B2', '予め記憶してあるδ（深度）—ΔＨｃＪ（保磁力増加量）の対応を示すデータベース及びＤｙ拡散条件（Ｄｙ拡散における拡散係数と拡散束と処理時間）の情報を示すデータベースを用い、磁石の形状情報及びＤｙ導入面情報から磁石内のＤｙ導入量の分布を算出し、Ｄｙ導入量の分布から磁石内でのΔＨｃＪの分布を算出する。保磁力が均質でなく分布を有する磁石について、算出したΔＨｃＪの分布を用いてＪ−Ｈカーブを算出し、温度係数を用いて所定の温度での減磁率を算出する。', '使用数据库显示磁体的形状，该数据库显示δ（深度）-ΔHcJ（矫顽力增加）与显示预先存储的Dy扩散条件（扩散系数和扩散通量和Dy扩散中的处理时间）之间的对应关系的信息根据信息和Dy引入表面信息计算磁体中Dy引入量的分布，并且根据Dy引入量的分布计算磁体中ΔHcJ的分布。使用计算出的具有非均匀矫顽力分布的磁体的ΔHcJ分布来计算JH曲线，并且使用温度系数计算预定温度下的退磁因子。', 'JP2013515162', 1337011200, 'JP6003887B2', 1475596800, 1406736000, NULL, 1473955200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 21, 1, 0, 0, 0, NULL, NULL, NULL, '2011110533', 'JP', 1305561600, 9, 9, NULL, NULL, 13, 0, 0, 0, 1, NULL, NULL, NULL, '居島 一仁', NULL, 'JP1999053422A | JP2004127056A | JP2004183099A | JP2004257879A | JP2006179963A | JP2008506376A | JP2010034365A | JP2011078270A | JP2011091119A | WO2006043348A1 | WO2007102391A1 | WO2008123251A1 | WO2009031292A1', NULL, '棗田 充俊,小高 智織,Dy蒸着拡散磁石を使用したモータの解析手法,電気学会研究会資料. SA, 静止器研究会 2011(14),日本,電気学会研究会資料. SA, 静止器研究会,2011年 1月20日,PP.37-42', 1, '\\20220510\\72f73223c53841cf95ecbff968086f2d.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, NULL, 39672, 39674, 39673, 9);
INSERT INTO `os_patent` VALUES (23221, 'Calculating method of magnetic force characteristic, and magnetic force characteristic computing device', '磁力特性计算方法及磁力特性计算装置', 'US9547051B2', 'A prestored database indicating a correspondence of δ (depth)/ΔHcJ (coercivity increment) and a prestored database indicating information of Dy diffusion condition (diffusion coefficient, diffusion flux and processing time regarding Dy diffusion) are used to compute distribution of Dy introduction amount in a magnet from shape information of the magnet and information of a Dy introduction face and compute distribution of ΔHcJ in the magnet from the distribution of Dy introduction amount. Regarding a magnet having a coercivity that is distributed non-uniformly, a J/H curve is computed using the computed distribution of ΔHcJ, and a demagnetizing factor at a predetermined temperature is computed using a temperature coefficient.', '预先存储的数据库表示δ（深度）/ΔHcJ（矫顽力增量）与指示Dy扩散条件信息（扩散系数，扩散通量和Dy扩散处理时间）的预先存储的数据库，用于计算Dy引入量的分布。根据磁体的形状信息和Dy导入面的信息，从Dy导入量的分布计算磁体中ΔHcJ的分布。关于具有非均匀分布的矫顽力的磁体，使用计算的ΔHcJ分布计算J / H曲线，并且使用温度系数计算预定温度下的退磁因子。', 'US14/112911', 1337011200, 'US9547051B2', 1484582400, 1392220800, NULL, 1484582400, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 29, 1, 0, 0, 0, NULL, NULL, NULL, '2011110533', 'JP', 1305561600, 9, 9, NULL, NULL, 19, 0, 0, 0, 2, NULL, '891', NULL, 'BUI, BRYAN', NULL, 'JP1999053422A | JP2004127056A | JP2004183099A | JP2004257879A | JP2008506376A | JP2010034365A | JP2011078270A | JP2011091119A | US20050151609A1 | US20080245442A1 | US20080286595A1 | US20100109468A1 | US20110150691A1 | US20120229240A1 | US9372244B2 | WO2006043348A1 | WO2007102391A1 | WO2008123251A1', NULL, 'Natsumeda et al., \"Analysis Method for Motor with Dy deposition diffusion processed Nd--Fe--B sintered magnet\", The Institute of Electrical Engineers of Japan Kenkyukai Shiryo SA, Seishiki Kenkyukai, vol. 14, pp. 37-42 (2011). cited by applicant | Office Action issued for Japanese application No. 2013-515162 dated Dec. 1, 2015, and its English translation, 8 pages. cited by applicant.', 1, '\\20220510\\e6162ae99d6e4dbebfb834700183d071.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 39672, 39674, 39673, 9);
INSERT INTO `os_patent` VALUES (23222, 'RH diffusion source, and method for producing R-T-B-based sintered magnet using same', 'RH扩散源及使用其制造R-T-B系烧结磁铁的方法', 'US9613748B2', 'A method for producing a sintered R-T-B based magnet includes providing a sintered R-T-B based magnet body, where T is mostly Fe; providing an RH diffusion source that includes 0.2 mass % to 18 mass % of a light rare-earth element RL; 40 mass % to 70 mass % of Fe; and a heavy rare-earth element RH as the balance; and performing an RH diffusion process by loading the sintered R-T-B based magnet body, a stirring aid member, and the RH diffusion source into a chamber, and by heating the sintered R-T-B based magnet body, the stirring aid member, and the RH diffusion source to a temperature of 700° C. to 1000° C. while rotating or rocking the chamber. The Fe/RH ratio is within a range from two to seven and is defined by a mass fraction of Fe when a mass fraction of the heavy rare-earth element RH in the RH diffusion sources is three.', '制造烧结的R-T-B基磁体的方法包括提供烧结的R-T-B基磁体，其中T主要是Fe;提供RH扩散源，其包含0.2质量％至18质量％的轻稀土元素RL; 40质量％至70质量％的Fe;和重稀土元素RH作为平衡;通过将RTB系烧结磁体，搅拌辅助构件和RH扩散源装入腔室，并通过加热RTB系烧结磁体，搅拌辅助构件和RH扩散源，进行RH扩散处理。在旋转或摇动腔室的同时，温度为700℃至1000℃。当RH扩散源中重稀土元素RH的质量分数为3时，Fe / RH比在2至7的范围内并且由Fe的质量分数限定。', 'US14/127174', 1340553600, 'US9613748B2', 1491235200, 1398873600, NULL, 1491235200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, '2011142077', 'JP', 1309104000, 7, 7, NULL, NULL, 7, 2, 0, 0, 1, NULL, '869', NULL, 'KING, ROY', 'KOSHY, JOPHY S', 'US20080286595A1 | US20090297699A1 | US20100003156A1 | US20120112863A1 | US20130087248A1 | US9293252B2 | US9368276B2', 'US10217562B2 | US20170323722A1', 'Official Communication issued in International Patent Application No. PCT/JP2012/066132, mailed on Aug. 28, 2012. cited by applicant.', 1, '\\20220510\\e41ed4232e02444e803206b19ecaa9d0.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 39675, 39677, 39676, 7);
INSERT INTO `os_patent` VALUES (23223, 'RH拡散源およびそれを用いたR-T-B系焼結磁石の製造方法', 'RH扩散源及使用其的R-T-B基烧结磁体的制造方法', 'JP5850052B2', '重希土類元素RHをR-T-B系焼結磁石体の表面から内部に効率よく拡散するR-T-B系焼結磁石の製造方法を提供する。\n\n 本発明のR-T-B系焼結磁石の製造方法は、R-T-B系焼結磁石体(Rは希土類元素、TはFeを主とする遷移金属元素)を準備する工程と、0.2質量%以上18質量%以下の軽希土類元素RL(NdおよびPrの少なくとも一種からなる)、40質量%以上70質量%以下のFe、残部が重希土類元素RH(DyおよびTbの少なくとも一種からなる)からなる合金であり、かつ重希土類元素RHとFeの質量比がRH:Fe=3:2から3:7であるRH拡散源を準備する工程と、前記R-T-B系焼結磁石体と前記RH拡散源とを相対的に移動可能かつ近接または接触可能に処理室内に装入し、処理室内にて連続的または断続的に移動させながら、700℃以上1000℃以下に加熱するRH拡散工程と、を包含する。', '一种制造R-T-B基烧结磁体的方法,可从R-T-B基烧结磁体的表面上有效地扩散重稀土元素RH。\n\n在根据本发明的制造RTB的烧结磁体中,基于RTB的烧结磁体(R是稀土元素,T是基于Fe的过渡金属元素主,0.2质量%或更多18质量%或更少是由40质量%或更高的合金或70%(重量)或更低的Fe,余量为40质量%以上,70质量%或更少的余量重稀土元素RH的平衡(至少一种类型的DY和TB)。制备RH扩散源的方法,其重稀土元素RH和Fe是RH:Fe = 3:2至3:7并且基于RTB的烧结磁体和RH扩散源相对移动,其包括RH扩散步骤,其在加载到处理室和接近或接触的同时将其加热至700℃以上或更长的RH扩散步骤。或更少。在处理室中连续或间歇地移动。', 'JP2013522840', 1340553600, 'JP5850052B2', 1454428800, 1424620800, NULL, 1449763200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 21, 1, 0, 0, 0, NULL, NULL, NULL, '2011142077', 'JP', 1309104000, 7, 7, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '田口 裕健', NULL, 'JP2009289994A | JP2010263172A | WO2007102391A1 | WO2011007758A1 | WO2012008426A1 | WO2020117758A1', NULL, NULL, 1, '\\20220510\\654e552e23904030aeaece212f3e99ba.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 39675, 39677, 39676, 7);
INSERT INTO `os_patent` VALUES (23224, '炭素が除去されたR-Fe-B系永久磁石合金再生材料を製造する方法', '生产R-Fe-B基永磁合金再循环材料的方法，其中已除去碳', 'JP5939252B2', '本発明の課題は、R-Fe-B系永久磁石のスクラップやスラッジ、使用済み磁石などとして発生する炭素含有合金から炭素を効果的に除去して合金再生材料を製造する方法を提供することである。その解決手段としての本発明の方法は、炭素を含むR-Fe-B系永久磁石合金に対してHDDR処理を行うことで炭素を除去することを特徴とする。本発明の方法で製造された合金再生材料は、炭素量が低減されているので、磁石の製造に再利用する場合、より多くを真空溶解炉において高周波加熱しても、製造される磁石に含まれる炭素量の無視できない増加を回避することができる。', '本发明的目的是提供一种方法,可有效地从作为废,污泥,使用磁铁等产生的含碳合金中除去碳的合金,以及制造回收的合金材料。是。作为溶液装置的本发明的方法的特征在于通过对含有碳的R-Fe-B永磁合金进行HDDR处理除去碳。由于通过本发明的方法制备的合金再循环材料的量减少了碳含量,如果重复使用用于制造磁铁,则在真空熔炼炉中的高频加热,它包括在磁铁中产生的无法忽略可以避免碳的量。', 'JP2013522978', 1340899200, 'JP5939252B2', 1466524800, 1424620800, NULL, 1464278400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 2, 0, 0, 0, NULL, NULL, NULL, '2011145338', 'JP', 1309363200, 8, 8, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, '五貫 昭一', NULL, 'JP1983073731A | JP1986153201A | JP2003051418A | JP2006265610A', NULL, NULL, 1, '\\20220510\\0389d8ac04404db396d2ec88bb0943d2.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39678, 39680, 39679, 8);
INSERT INTO `os_patent` VALUES (23225, 'Method for producing R-Fe-B based permanent magnet alloy recycled material having removed carbon', '一种脱碳R-Fe-B基永磁合金再生材料的制造方法', 'US9657367B2', 'An object of the present invention is to provide a method for producing an alloy recycled material by effectively removing carbon from a carbon-containing alloy, which is produced as scrap or sludge of an R—Fe—B based permanent magnet, a used magnet, or the like. The method of the present invention as a means for resolution is characterized in that a carbon-containing R—Fe—B based permanent magnet alloy is subjected to an HDDR treatment to remove carbon. An alloy recycled material produced by the method of the present invention contains a reduced amount of carbon. Therefore, in the case where it is recycled for the production of a magnet, even when an increased amount is subjected to high-frequency heating in a vacuum melting furnace, a non-negligible increase in the amount of carbon contained in the produced magnet can be avoided.', '本发明的一个目的是提供一种通过有效地从含碳合金中除去碳来生产合金再循环材料的方法，该含碳合金是作为R-Fe-B基永磁体的废料或污泥，用过的磁铁，等等。作为拆分手段的本发明方法的特征在于，对含碳的R-Fe-B基永磁合金进行HDDR处理以除去碳。通过本发明的方法生产的合金再循环材料含有减少量的碳。因此，在再生用于生产磁铁的情况下，即使增加的量在真空熔炼炉中进行高频加热，所生产的磁铁中所含碳量的不可忽略的增加也是如此。要避免。', 'US14/125715', 1340899200, 'US9657367B2', 1495468800, 1399478400, NULL, 1495468800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 2, 0, 0, 0, NULL, NULL, NULL, '2011145338', 'JP', 1309363200, 8, 8, NULL, NULL, 14, 1, 0, 0, 4, NULL, '875', NULL, 'WYSZOMIERSKI, GEORGE', NULL, 'CN101015859A | CN1033018A | CN1293435A | CN1866417A | JP1974000001A | JP1990004901A | JP1998012473A | JP1998022155A | JP2006508241A | US20060162821A1 | US20090032147A1 | US3970485A | US4981532A | US8734714B2', 'US10323300B1', 'A. Sakamoto, et al.; \"Suiso Fun\'iki Chunetsu Shori ni yoru Nd-Fe-B-kei Seikeitai eno Eikyo;\" Abstracts of Meeting of Japan Society of Powder and Powder Metallurgy; vol. 2008; Nov. 5, 2008; p. 120 and end sheet (2 sheets total)/Cited in International Search Report. cited by applicant | First Office Action issued on Jul. 20, 2015 to the corresponding Chinese patent application No. 201280031803.2. | International Search Report for International Application No. PCT/JP2012/066712 dated Oct. 2, 2012. cited by applicant | Second Office Action issued on Mar. 17, 2016 in the corresponding Chinese patent application No. 201280031803.2. cited by applicant.', 1, '\\20220510\\8c3dc871d363438783e7300cd138ba86.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39678, 39680, 39679, 8);
INSERT INTO `os_patent` VALUES (23226, 'Method for recovering rare earth element', '回收稀土元素的方法', 'US9322082B2', 'An object of the present invention is to provide a method for recovering a rare earth element from a workpiece containing at least a rare earth element and an iron group element, which can be put into practical use as a low-cost, simple recycling system. The method of the present invention as a means for resolution is characterized by including at least a step of separating a rare earth element in the form of an oxide from an iron group element by subjecting a workpiece to an oxidation treatment, then turning the treatment environment into an environment where carbon is present, and subjecting the oxidation-treated workpiece to a heat treatment at a temperature of 1150° C. or more.', '本发明的一个目的是提供一种从含有至少稀土元素和铁族元素的工件中回收稀土元素的方法，该方法可以作为低成本，简单的再循环系统投入实际使用。作为拆分手段的本发明方法的特征在于，至少包括通过对工件进行氧化处理，然后转动处理环境，从铁组元素中分离出氧化物形式的稀土元素的步骤。在存在碳的环境中，对经氧化处理的工件进行1150℃以上的热处理。', 'US14/234750', 1343318400, 'US9322082B2', 1461600000, 1404316800, NULL, 1461600000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 2, 0, 0, 0, NULL, NULL, NULL, '2011166695 | 2011287078', 'JP | JP', 1311868800, 12, 12, NULL, NULL, 8, 2, 1, 1, 2, NULL, '875', NULL, 'SWAIN, MELISSA', NULL, 'CN1511966A | CN1605638A | JP1990022426A | JP2002060863A | JP2004068082A | JP2009249674A | WO2010098381A1', 'US10316393B2 | US11148957B2', 'First Office Action issued on Jan. 15, 2015 corresponding to Chinese patent application No. 201280038041.9. cited by applicant | International Search Report for International Application No. PCT/JP2012/069180 dated Oct. 23, 2012. cited by applicant.', 1, '\\20220510\\1ed49ad8600843f799f1e0793f29ea58.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39681, 39683, 39682, 13);
INSERT INTO `os_patent` VALUES (23227, '希土類元素の回収方法', '回收稀土元素的方法', 'JP5327409B2', '本発明の課題は、低コストで簡易なリサイクルシステムとして実用化が可能な、少なくとも希土類元素と鉄族元素を含む処理対象物から希土類元素を回収する方法を提供することである。その解決手段としての本発明の方法は、処理対象物に対して酸化処理を行った後、処理環境を炭素の存在下に移し、1150℃以上の温度で熱処理することで、希土類元素を酸化物として鉄族元素から分離する工程を少なくとも含んでなることを特徴とする。', '本发明的一个目的是提供一种从加工目的中回收稀土元素的方法,包括至少可以作为低成本和简单回收系统的实际用途的至少稀土元素和铁组元素。作为溶液装置的本发明方法是相对于加工靶的氧化处理,然后在1150℃或更高的温度下将加工环境转移到碳和热处理的存在下,使得稀有的地球元素是氧化物。其特征在于,至少含有与铁基元素分离的步骤。', 'JP2013512663', 1343318400, 'JP5327409B2', 1383062400, 1383062400, NULL, 1375372800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 2, 0, 0, 0, NULL, NULL, NULL, '2011166695 | 2011287078', 'JP | JP', 1311868800, 12, 12, NULL, NULL, 6, 1, 0, 1, 0, NULL, NULL, NULL, '池ノ谷 秀行', NULL, 'JP1990022426A | JP2002060863A | JP2004068082A | JP2009249674A | WO2007119846A1 | WO2010098381A1', 'US11279987B2', NULL, 1, '\\20220510\\04f0308f5a1943f68c856670f0f0da48.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39681, 39683, 39682, 13);
INSERT INTO `os_patent` VALUES (23228, 'Method for recovering rare earth element', '回收稀土元素的方法', 'EP2738270B1', 'An object of the present invention is to provide a method for recovering a rare earth element from a workpiece containing at least a rare earth element and an iron group element, which can be put into practical use as a low-cost, simple recycling system. The method of the present invention as a means for resolution is characterized by including at least a step of separating a rare earth element in the form of an oxide from an iron group element by subjecting a workpiece to an oxidation treatment, then turning the treatment environment into an environment where carbon is present, and subjecting the oxidation-treated workpiece to a heat treatment at a temperature of 1150°C or more.', '本发明的目的是提供一种用于从至少包含稀土元素和铁族元素的工件中回收稀土元素的方法，该方法可以作为低成本，简单的回收系统投入实际使用。 作为解决手段的本发明的方法的特征在于，至少包括以下步骤：通过对工件进行氧化处理，然后改变处理环境，从铁族元素中分离出氧化物形式的稀土元素。 进入存在碳的环境中，并对经过氧化处理的工件进行1150°C或更高温度的热处理。', 'EP2012819272', 1343318400, 'EP2738270B1', 1579622400, 1401811200, NULL, 1579622400, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 18, 2, 0, 0, 0, NULL, NULL, NULL, '2011166695 | 2011287078', 'JP | JP', 1311868800, 12, 12, NULL, NULL, 6, 0, 0, 0, 0, NULL, '874', NULL, NULL, NULL, 'JP2002060863A | JP2004068082A | JP2009249674A | WO2007119846A1 | WO2010098381A1', NULL, NULL, 1, '\\20220510\\0f41064f79fc463a86380b0d868a0c58.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, '有效:DE,BE,FR | 失效:RS,NO,FI,PT,BG,DK,LT,LU,LV,HR,SE,SI,MC,SK,SM,GB,IE,EE,CH,IS,IT,GR,ES,AT,CZ,PL,RO,LI,NL | 未确认:HU,MK,MT,AL,CY,TR', 39681, 39683, 39682, 13);
INSERT INTO `os_patent` VALUES (23229, 'PHƯƠNG PHÁP THU HỒI NGUYÊN TỐ ĐẤT HIẾM', '稀有元素的方法', 'VN10022716B', 'Sáng chế đề cập đến phương pháp thu hồi nguyên tố đất hiếm từ chi tiết gia công chứa ít nhất là nguyên tố đất hiếm và nguyên tố nhóm sắt, phương pháp này có thể được áp dụng trên thực tế do hệ thống tái chế đơn giản và có chi phí thấp. Phương pháp theo sáng chế là phương pháp tách,khác biệt ở chỗ, phương pháp này bao gồm ít nhất là bước tách nguyên tố đất hiếm ở dạng oxit ra khỏi nguyên tố nhóm sắt bằng cách xử lý oxy hóa chi tiết gia công, sau đó chuyển môi trường xử lý thành môi trường có mặt cacbon, và xử lý nhiệt chi tiết gia công đã được xử lý oxy hóa này ở nhiệt độ lớn hơn hoặc bằng 1150°C.', '该专利是指从加工细节中储存的稀土元素回收方法,其包含至少稀土和铁组元素的元素,其实际上可以应用于简单的回收系统。和低成本。专利的方法是一种分离方法,其与该方法不同,该方法包括通过处理氧化加工细节的氧化物元素的稀土元素分离的稀土元素分离,之后将环境运输到用碳表面对待环境,并在大于或等于1150℃的温度下将处理细节的热处理已经用该氧化处理。', 'VN1201400577', 1343318400, 'VN10022716B', 1580054400, 1401033600, NULL, 1575216000, '越南', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 29, 2, 0, 0, 0, NULL, NULL, NULL, '2011287078 | 2011166695', 'JP | JP', 1325001600, 12, 12, NULL, NULL, 0, 0, 0, 0, 0, NULL, '892', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39681, 39683, 39682, 13);
INSERT INTO `os_patent` VALUES (23230, 'VERFAHREN ZUR RÜCKGEWINNUNG VON SELTENERDELEMENTEN', '回收稀土元素的方法', 'DE602012067459T2', 'The present invention addresses the problem of providing a method for recovering a rare earth element from an object to be processed containing at least the rare earth element and an iron group element, said method being able to be put into practical use as a simple, low-cost recycling system. A method of the present invention as a means for solving the above-mentioned problem is characterized by comprising at least a step wherein an object to be processed is oxidized, and then the processing environment is changed into one in the presence of carbon and the object is heat-treated at a temperature of 1,150°C or more, so that the rare earth element is separated in the form of oxide from the iron group element.', '本发明解决了提供一种从含有至少稀土元素和铁族元素的待处理物体中回收稀土元素的方法的问题，所述方法能够投入实际使用，因为它简单，低 - 成本回收系统。作为解决上述问题的手段的本发明的方法的特征在于包括至少一个步骤，其中待处理的物体被氧化，然后在存在碳和物体的情况下将处理环境变为一个在1,150℃或更高的温度下进行热处理，使稀土元素以氧化物的形式从铁族元素中分离出来。', 'DE602012067459', 1343318400, 'DE602012067459T2', 1579622400, 1579622400, NULL, 1579622400, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 29, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39684, 39683, 39685, 13);
INSERT INTO `os_patent` VALUES (23231, 'R—Fe—B porous magnet and method for producing the same', 'R-Fe-B多孔磁铁及其制造方法', 'US9418786B2', 'An R—Fe—B based porous magnet according to the present invention has an aggregate structure of Nd2Fe14B type crystalline phases with an average grain size of 0.1 μm to 1 μm. At least a portion of the magnet is porous and has micropores with a major axis of 1 μm to 20 μm.', '根据本发明的R-Fe-B基多孔磁体具有Nd  2  Fe  14  B型晶相的聚集体结构，平均粒径为0.1μm至1微米。至少一部分磁体是多孔的并且具有长轴为1μm至20μm的微孔。', 'US13/586917', 1345046400, 'US9418786B2', 1471276800, 1354723200, NULL, 1471276800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 33, 5, 0, 0, 0, NULL, NULL, NULL, 'PCT/JP2007/060216 | 2006223162 | 2006139148 | 2006240306 | 2006324298 | 2006181944', 'WO | JP | JP | JP | JP | JP', 1179417600, 12, 24, NULL, NULL, 1, 0, 0, 0, 1, NULL, '869', NULL, 'WALCK, BRIAN', NULL, 'US4981532A', NULL, 'Nishiuchi et al.; \"R--Fe--B Porous Magnet and Method for Producing the Same\", U.S. Appl. No. 12/092,300; filed May 1, 2008. cited by applicant.', 1, '\\20220510\\2ff6a0e28b0948ad877c24997a2c5bda.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 39277, 39279, 39278, 26);
INSERT INTO `os_patent` VALUES (23232, '希土類磁石からの希土類金属回収方法', '从稀土磁体中回收稀土金属的方法', 'JP5942718B2', '(修正有)\n\n【課題】溶融マグネシウムを用いて希土類磁石から希土類金属を抽出させ、抽出された希土類金属を含むマグネシウムと希土類磁石の残成分との分離に加えて、希土類金属を含むマグネシウムから希土類金属とマグネシウムの分離も行う、希土類金属回収方法を提供する。\n\n【解決手段】希土類磁石10から希土類金属を回収する希土類金属回収方法において、反応容器102へ希土類磁石10と、希土類磁石重量の5〜15倍のマグネシウム20を投入し、前記希土類金属を有する磁石から溶融マグネシウムに高効率に前記希土類金属を抽出させ、前記希土類金属が抽出された残りの磁石と、前記希土類金属を溶解させた液体のマグネシウムとを分離し、前記分離された希土類金属を含む液体のマグネシウムから、前記マグネシウムを気化させて、マグネシウム回収容器101bへ移動させることによって、前記希土類金属と前記マグネシウムを回収するようにした。\n\n【選択図】図1', '（经修改）\n\nA正在使用镁的熔融萃取从稀土磁体稀土金属，除镁和包含所提取的稀土类金属的稀土类磁铁的其余部件的分离，从含稀土金属和镁的稀土金属的镁分离还提供了一种回收稀土金属的方法。\n\n在从稀土磁体10，所述稀土磁体10插入到反应容器102中，镁（重量）的稀土类磁铁的20 5至15倍回收的稀土类金属的稀土类金属回收方法被提，具有稀土类金属的磁铁在熔融镁稀土金属的高效率被提取，并且其中，所述稀土类金属被提取的磁体，分离和液体镁的其余部分溶解稀土金属，含有分离的稀土类金属的液体镁从镁中蒸发并移动到镁回收容器101b中以回收稀土金属和镁。\n\n点域1', 'JP2012198449', 1347206400, 'JP5942718B2', 1467129600, 1395244800, NULL, 1464883200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 10, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 1, 0, 0, 0, 3, NULL, '893', NULL, '向井 佑', NULL, 'US5437709A', NULL, 'Materials Transactions,2003,Vol.44,No.4,p.798-801 | XU Y 他2名,Liquid metal extraction of Nd from NdFeB magnet scrap,J Mater Res,米国,2000年11月,Vol.15 No.11,Page.2296-2304 | 竹田修 他2名,溶融金属を用いたNd‐Fe‐B磁石合金からのネオジムの分離·回収,資源·素材学会春季大会講演集,日本,2002年 3月28日,No.2,Page.162-163', 1, '\\20220510\\71bc501ae7644651941846e05a12bc63.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 39686, 39688, 39687, 2);
INSERT INTO `os_patent` VALUES (23233, '希土類金属回収装置及び希土類金属回収方法', '稀土金属回收装置和稀土金属回收方法', 'JP5867348B2', '(修正有)\n\n【課題】溶融金属抽出法によって得られる希土類金属を、容器への固着を抑えて容器から回収することが可能となる装置及び方法を提供する。\n\n【解決手段】希土類金属回収装置100を、室内を真空引き、またはアルゴンガス雰囲気に変更可能な密閉型装置筺体101と、前記装置筺体内に設置され、溶融されたMg-希土類金属合金を収容する希土類金属回収容器10と、前記希土類金属回収容器内に設置され、希土類金属抽出後の希土類磁石残成分をMg-希土類金属合金から分離する分離手段40と、前記装置筺体内を加熱する加熱手段102とを有し、前記希土類金属回収容器10は、その素材または内壁表面がボロンナイトライドで構成されるようにした。\n\n【選択図】図1', '摘要：要解决的问题：提供一种装置和方法，其能够从容器中回收通过熔融金属提取方法获得的稀土金属，同时抑制稀土金属粘附到容器中。解决方案：稀土金属回收装置100包括：密封型装置壳体101，其内部可以抽真空或者可以改变为氩气气氛;稀土金属回收容器10，安装在装置壳体内，容纳熔化的Mg-稀土金属合金;分离装置40安装在稀土金属回收容器中，并在稀土金属提取后从稀土金属合金中分离稀土磁体残余组分;加热装置壳体内部的加热装置102，稀土金属回收容器10的材料或内壁表面由氮化硼构成。', 'JP2012198447', 1347206400, 'JP5867348B2', 1456243200, 1395244800, NULL, 1452787200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 9, 4, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 2, 0, 0, 0, 2, NULL, '893', NULL, '國方 康伸', NULL, 'JP2003185346A | JP2012188695A', NULL, 'Materials Transactions,2003,Vol.44,No.4,PP.798-801 | Toru H. Okabe,Osamu Takeda,Kazuhiro Fukuda,Yoshiaki Umetsu,Direct Extraction and Recovery of Neodymium Metal from Magnet Scrap,Materials Transactions,日本,社団法人 日本金属学会,2003年 4月20日,Vol.44 No,4,p798〜p801', 1, '\\20220510\\a4c6f716c5414da8bd581ebb614404e2.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39689, 39691, 39690, 2);
INSERT INTO `os_patent` VALUES (23234, '表面改質されたR-Fe-B系焼結磁石の製造方法', '表面改性R  -  Fe  -  B基烧结磁体的制备方法', 'JP6037213B2', '(修正有)\n\n【課題】優れた耐食性を有するとともに、優れた表面接着性を有する表面改質されたR-Fe-B系焼結磁石の製造方法を提供する。\n\n【解決手段】酸素分圧が1×103Pa〜1×105Paで水蒸気分圧が1000Pa未満であり、かつ、酸素分圧と水蒸気分圧の比率(酸素分圧/水蒸気分圧)が1〜20000(但し1を除く)の雰囲気を、処理室内の容積1m3あたりの雰囲気ガスの導入を酸素流量として0.028m3/分以上、かつ、全体流量として3m3/分以下の条件で行うことで処理室内が陽圧状態になるようにして形成し、R-Fe-B系焼結磁石に対し前記処理室内で260℃〜450℃で熱処理を行う工程を含み、熱処理を行った温度からの磁石の降温を、少なくとも100℃に至るまで650℃/時間以上の平均冷却速度で行う。\n\n【選択図】図1', '（经修改）\n\n要解决的问题：提供一种生产表面改性的R-Fe-B基烧结磁体的方法，该烧结磁体具有优异的耐腐蚀性和优异的表面粘附性。\n\n解决方案：在1×10  3  Pa至1×10  5  Pa的氧气分压和氧气分压和水蒸气下，水蒸气分压小于1000 Pa通过在处理室中每1m  3 引入气氛气体，引入分压比（氧分压/水蒸气分压）为1至20000（除1之外）的气氛作为氧气流速。形成处理室，使得处理室的内部通过以总流量为0.028m  3  / min或更高且3m  3  / min或更低的条件处于正压状态。 ，在处理室中在260℃至450℃下对R-Fe-B基烧结磁体进行热处理的步骤，其中磁体的温度从进行热处理的温度降低至至少650℃/ s，平均冷却速度的小时数。\n\n点域1', 'JP2012206563', 1348070400, 'JP6037213B2', 1481040000, 1397059200, NULL, 1478793600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 12, 0, 0, 0, 0, NULL, NULL, NULL, '池田 安希子', NULL, 'JP1986257461A | JP1992328804A | JP2002057052A | JP2005310975A | JP2006156853A | JP2006210864A | JP2007103523A | JP2007207936A | JP2008244126A | JP2012142400A | WO2009041639A1', NULL, NULL, 1, '\\20220510\\5bb0a3a79315471c800085c87a73ab33.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 39692, 39694, 39693, 2);
INSERT INTO `os_patent` VALUES (23235, 'Method for removing rare earth impurities in electrolytic nickel plating solution', '去除电解镀镍液中稀土杂质的方法', 'EP2749674B1', '[Object] When rare earth magnets are plated, components of the rare earth magnets are dissolved in the plating solution, causing plating defects. Thus, an easy method for removing rare earth impurities has been necessary. [Means for Solution] A nickel-electroplating solution containing rare earth impurities is kept at 60°C or higher for a predetermined period of time to precipitate rare earth impurities for separation by sedimentation or filtration. Rare earth impurities can be precipitated further efficiently by adding precipitate to the nickel-electroplating solution, or by concentrating the nickel-electroplating solution by heating.', '[目的]当稀土磁体被电镀时，稀土磁体的组分溶解在电镀液中，导致电镀缺陷。因此，需要一种简单的除去稀土杂质的方法。 [溶液用手段]将含有稀土杂质的镍电镀液在60℃或更高温度下保持预定的一段时间，以沉淀稀土杂质，通过沉降或过滤进行分离。通过向镍电镀溶液中添加沉淀物，或通过加热浓缩镍电镀溶液，可以进一步有效地沉淀稀土杂质。', 'EP2012834933', 1348156800, 'EP2749674B1', 1468944000, 1404230400, NULL, 1468944000, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 18, 1, 0, 0, 0, NULL, NULL, NULL, '2011212339 | 2011237212', 'JP | JP', 1317139200, 10, 10, NULL, NULL, 5, 0, 0, 0, 0, NULL, '894', NULL, NULL, NULL, 'JP1984112572A | JP1990209500A | JP1995034300A | JP2006077271A', NULL, NULL, 1, '\\20220510\\9704d1b47bd64712acc788e5f3bfd5bd.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, '有效:DE | 失效:RS,NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,HU,SE,SI,MC,SK,SM,GB,IE,MK,EE,CH,MT,IS,IT,GR,AL,ES,AT,CY,CZ,PL,RO,LI,TR,NL', 39695, 39697, 39696, 11);
INSERT INTO `os_patent` VALUES (23236, '電気ニッケルめっき液中の希土類不純物の除去方法', '去除电镀镍溶液中稀土杂质的方法', 'JP5692400B2', '【課題】 希土類磁石をめっきする場合、希土類磁石の成分がめっき液に溶解し、めっき不良の原因となった。希土類不純物を除去する簡便な方法が必要であった。\n\n【解決手段】 希土類不純物が溶解した電気ニッケルめっき液を60℃以上に加温し一定時間保持することで希土類不純物を析出物とし、沈降や濾過することで分離する。また析出物を電気ニッケルめっき液に添加するか、電気ニッケルめっき液を加温濃縮することで希土類不純物を更に効率よく析出させることが可能となる。\n\n【選択図】 図1', '要解决的问题:镀覆稀土磁铁,稀土磁铁的组分溶解在电镀溶液中并导致电镀失效。需要一种方便的去除稀土杂质的方法。\n\n溶液:将稀土杂质溶解的电镀镀镍溶液加热至60℃以上,稀土杂质是沉淀物,通过沉降和过滤分离。此外,将沉淀物加入到电镀镍溶液中,或者加热电镍电镀液并浓缩,以更有效地沉淀稀土杂质。\n\n图1', 'JP2013536219', 1348156800, 'JP5692400B2', 1427817600, 1427299200, NULL, 1423756800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 18, 1, 0, 0, 0, NULL, NULL, NULL, '2011212339 | 2011237212', 'JP | JP', 1317139200, 10, 10, NULL, NULL, 3, 2, 0, 0, 0, NULL, NULL, NULL, '國方 康伸', NULL, 'JP1990209500A | JP1995062600A | JP2006077271A', 'JP6319297B2 | JPWO2014156761A1', NULL, 1, '\\20220510\\8cbfb6bc30a94b228d699c9fd1e0092e.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39695, 39697, 39696, 11);
INSERT INTO `os_patent` VALUES (23237, 'Method for removing rare earth impurities from nickel-electroplating solution', '一种去除镍电镀液中稀土杂质的方法', 'US9695524B2', '[Object] When rare earth magnets are plated, components of the rare earth magnets are dissolved in the plating solution, causing plating defects. Thus, an easy method for removing rare earth impurities has been necessary.\n\n[Means for Solution] A nickel-electroplating solution containing rare earth impurities is kept at 60° C. or higher for a predetermined period of time to precipitate rare earth impurities for separation by sedimentation or filtration. Rare earth impurities can be precipitated further efficiently by adding precipitate to the nickel-electroplating solution, or by concentrating the nickel-electroplating solution by heating.', '[目的]当稀土磁体被电镀时，稀土磁体的组分溶解在电镀液中，导致电镀缺陷。因此，需要一种简单的除去稀土杂质的方法。\n\n[溶液的手段]将含有稀土杂质的镍电镀液在60℃或更高温度下保持预定的一段时间，以沉淀稀土杂质，通过沉降或过滤进行分离。通过向镍电镀溶液中添加沉淀物，或通过加热浓缩镍电镀溶液，可以进一步有效地沉淀稀土杂质。', 'US14/346058', 1348156800, 'US9695524B2', 1499097600, 1407945600, NULL, 1499097600, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, '2011212339 | 2011237212', 'JP | JP', 1317139200, 10, 10, NULL, NULL, 18, 0, 0, 0, 8, NULL, '870', NULL, 'LIN, JAMES', 'CHUNG, HO-SUNG', 'CN101484615A | JP1986000533A | JP1990209500A | JP1995034300A | JP1995062600A | JP2002194600A | JP2006077271A | JP2008045187A | JP2013173993A | US20030226761A1 | US20050232849A1 | US20090078577A1 | US20110120267A1 | US20120309614A1 | US20160002814A1 | US20160002815A1 | US3653813A | US5037463A', NULL, 'An Office Action dated Mar. 24, 2017, which issued during the prosecution of U.S. Appl. No. 14/771,327. cited by applicant. | Chinese Office Action issued Dec. 1, 2016, for Application No. 201480017674.0, 13 pages total. cited by applicant | Communication dated Sep. 6, 2015 from the State Intellectual Property Office of the P.R.C. in counterpart application No. 201280048690.7. cited by applicant | Final Office Action dated Feb. 15, 2017, issued in corresponding U.S. Appl. No. 14/771,330, 11 pages. cited by applicant | International Search Report for International Application No. PCT/JP2014/057136 dated Jun. 17, 2014; 5 pages. cited by applicant | Li et al., Recovery of Ni, Co and rare earths from spent Ni-metal hydride batteries and preparation of spherical Ni(OH)2, 100 Hydrometallurgy 41-46 (2009). cited by examiner | Nakayama and Sakamoto, english abstract and machine translation, JP 2006-77271 A (2006). cited by examiner | Non-Final Office Action dated Oct. 19, 2016, issued in U.S. Appl. No. 14/771,330, 8 pages. cited by applicant', 1, '\\20220510\\19e7274b5ce64d1e859fd62f6171f082.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39695, 39697, 39696, 11);
INSERT INTO `os_patent` VALUES (23238, 'VERFAHREN ZUR ENTFERNUNG VON SELTENERDVERUNREINIGUNGEN IN EINER LÖSUNG FÜR ELEKTROLYTISCHE VERNICKELUNG', '在电解镍电镀溶液中除去稀土污染物的方法', 'DE602012020854T2', '[Problem] When plating a rare earth magnet, components of the rare earth magnet dissolve in a plating solution, causing plating defects. A simple method for removing the rare earth impurities has been required. [Solution] An electrolytic nickel plating solution in which rare earth impurities dissolve is heated up to 60 °C or more and this temperature is maintained for a certain time, thereby allowing the rare earth impurities to form deposits, which are separated by sedimentation and filtration. Alternatively, by adding the deposits to the electrolytic nickel plating solution or by heating and concentrating the electrolytic nickel plating solution, it is possible to more efficiently precipitate the rare earth impurities.', '[问题]当电镀稀土磁体时，稀土磁体的组分溶解在电镀液中，导致电镀缺陷。已经需要一种去除稀土杂质的简单方法。 [解决方案]将稀土杂质溶解的电解镀镍溶液加热至60℃或更高，并将该温度保持一定时间，从而使稀土杂质形成沉积物，沉淀物通过沉淀和过滤分离。或者，通过将沉积物添加到电解镍镀液中或通过加热和浓缩电解镍镀液，可以更有效地沉淀稀土杂质。', 'DE602012020854', 1348156800, 'DE602012020854T2', 1468944000, 1468944000, NULL, 1468944000, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 34, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '895', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39698, 39697, 39699, 11);
INSERT INTO `os_patent` VALUES (23239, 'Regeneration method and regeneration apparatus for powder for rare earth sintered magnet', '稀土烧结磁体粉体的再生方法及再生装置', 'EP2765585B1', 'Provided are a recycle method and apparatus for effectively obtaining a recycled alloy powder which is hardly oxidized and which has substantially the same particle diameter as that of alloy powder used for forming a molded body, by using the molded body formed by press molding in manufacturing a rare earth sintered magnet. A method for recycling a powder containing a rare earth element, comprising the steps of: i) placing in an oil a molded body for a rare earth sintered magnet, the molded body comprising a powder containing a rare earth element; ii) arranging the oil and at least a part of the molded body in between a plurality of plate-like first crushing teeth opposed to each other and a plate-like second crushing tooth having at least its part positioned between the adjacent first crushing teeth; iii) rotating at least either one of the plurality of first crushing teeth and the second crushing tooth without contacting to each other such that the first crushing teeth and the second crushing tooth serve to change a part of the second crushing tooth positioned between the adjacent first crushing teeth.', '本发明提供一种再循环方法和装置，通过使用在制造中通过压制成型形成的成型体，有效地获得难以氧化并且具有与用于形成成型体的合金粉末基本相同的粒径的再循环合金粉末。稀土烧结磁铁。一种含有稀土元素粉末的再循环方法，包括以下步骤：i）在稀土烧结磁体的成型体中加入油，该成型体含有含有稀土元素的粉末; ii）将油和至少一部分成型体布置在多个彼此相对的板状第一破碎齿之间，以及板状第二破碎齿，其至少部分位于相邻的第一破碎齿之间; iii）旋转多个第一破碎齿和第二破碎齿中的至少任一个而不彼此接触，使得第一破碎齿和第二破碎齿用于改变位于相邻的第一破碎齿之间的第二破碎齿的一部分碾牙。', 'EP2012835343', 1348416000, 'EP2765585B1', 1498579200, 1407859200, NULL, 1498579200, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 23, 2, 0, 0, 0, NULL, NULL, NULL, '2011216466', 'JP', 1317312000, 10, 10, NULL, NULL, 11, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, 'EP1096517A2 | JP1976015770U | JP1984136907A | JP1992083319A | JP1998241981A | JP2002313616A | JP2004207578A | JP2005054261A | JP2005161779A | WO2007106773A1 | WO2011125578A1', NULL, NULL, 1, '\\20220510\\7f71033fd3d941a5a7dd8442229d5d8e.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, '有效:DE | 失效:RS,NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,HU,SE,SI,MC,SK,SM,GB,IE,MK,EE,CH,MT,IS,IT,GR,AL,ES,AT,CY,CZ,PL,RO,LI,TR,NL', 39700, 39702, 39701, 11);
INSERT INTO `os_patent` VALUES (23240, '希土類系焼結磁石用粉末の再生方法および再生装置', '用于再生稀土基烧结磁体粉末的方法和设备', 'JP5962662B2', '希土類系焼結磁石を製造する際のプレス成形により得た成形体から、当該成形体を得るのに用いた合金粉末と実質的に同じ粒径を有し、かつ酸化を抑制した再生合金粉末を効率的に得ることができる方法および装置を提供する。\n\n i)希土類元素を含む粉末を含んで成る希土類系焼結磁石用の成形体を油の中に配置する工程と、ii)互いに対向して配置された複数の板状の第1解砕歯と、少なくとも一部分が、隣り合う前記第1解砕歯の間に位置する板状の第2解砕歯との間に、前記成形体の少なくとも一部と前記油とを配置する工程と、iii)前記第1解砕歯と前記第2解砕歯が、前記隣り合う複数の第1解砕歯の間に位置する前記第2解砕歯の部位を変えるように、前記複数の第1解砕歯と前記第2解砕歯の少なくとも一方が、互いに接触することなく、回転する工程と、を含むことを特徴とする希土類元素を含む粉末の再生方法。', '通过在制造稀土基烧结磁体时通过压制成型获得的模塑体,所提供的再生合金粉末直径与用于获得模塑主体的合金粉末和所提供的抑制氧化是一种方法和装置可以有效获得。\n\ni)将模塑制品放置在稀土烧结磁体中,包括粉末,该粉末包含在油中的稀土元素中的粉末; II),具有多个板状的第一碎齿彼此布置。处理至少一部分模塑体和油,至少一部分,至少一部分,至少一部分,模塑体和油的至少一部分,以及油和III)的第一破碎齿和第二碎齿是再现粉末的方法一种稀土元素,其包括齿和第二破碎齿中的至少一个,而不彼此接触。', 'JP2013536257', 1348416000, 'JP5962662B2', 1470153600, 1427299200, NULL, 1467907200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 18, 2, 0, 0, 0, NULL, NULL, NULL, '2011216466', 'JP', 1317312000, 10, 10, NULL, NULL, 2, 0, 0, 0, 0, NULL, NULL, NULL, '五貫 昭一', NULL, 'JP2004207578A | JP2006314889A', NULL, NULL, 1, '\\20220510\\c2032c0d6dc14e00adfbc519d0996943.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39700, 39702, 39701, 11);
INSERT INTO `os_patent` VALUES (23241, 'Recycle method and recycle apparatus for powder for rare earth sintered magnet', '稀土烧结磁体粉体回收方法及回收装置', 'US9463509B2', 'Provided are a recycle method and apparatus for effectively obtaining a recycled alloy powder which is hardly oxidized and which has substantially the same particle diameter as that of alloy powder used for forming a molded body, by using the molded body formed by press molding in manufacturing a rare earth sintered magnet. A method for recycling a powder containing a rare earth element, comprising the steps of: i) placing in an oil a molded body for a rare earth sintered magnet, the molded body comprising a powder containing a rare earth element; ii) arranging the oil and at least a part of the molded body in between a plurality of plate-like first crushing teeth opposed to each other and a plate-like second crushing tooth having at least its part positioned between the adjacent first crushing teeth; iii) rotating at least either one of the plurality of first crushing teeth and the second crushing tooth without contacting to each other such that the first crushing teeth and the second crushing tooth serve to change a part of the second crushing tooth positioned between the adjacent first crushing teeth.', '本发明提供一种再循环方法和装置，其通过使用在制造过程中通过压制成型而形成的成型体，有效地获得几乎不被氧化并且具有与用于形成成型体的合金粉末基本相同的粒径的再循环合金粉末稀土烧结磁体。 1.一种含有稀土元素的粉末的再循环方法，包括以下步骤：i）在油中放入稀土烧结磁体用模制体，该模制体包括含稀土元素的粉末; ii）将所述油和所述模制体的至少一部分布置在彼此相对的多个板状第一破碎齿之间，以及至少其部分位于相邻的所述第一破碎齿之间的板状第二破碎齿; iii）使所述多个第一破碎齿和所述第二破碎齿中的至少任一个彼此不接触地旋转，使得所述第一破碎齿和所述第二破碎齿用于改变位于所述相邻的第一破碎齿之间的所述第二破碎齿的一部分破碎的牙齿。', 'US14/348099', 1348416000, 'US9463509B2', 1476115200, 1409155200, NULL, 1476115200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 18, 2, 0, 0, 0, NULL, NULL, NULL, '2011216466', 'JP', 1317312000, 10, 10, NULL, NULL, 14, 2, 0, 0, 2, NULL, '870', NULL, 'ROSENBAUM, MARK', NULL, 'EP1096517A2 | JP1976015770A | JP1976015770U | JP1984136907A | JP1992083319A | JP1998241981A | JP2002313616A | JP2004207578A | JP2005054261A | JP2005161779A | JP2006314889A | US9358614B2 | WO2007106773A1 | WO2011125578A1', 'US10807167B2 | US20160023276A1', 'Communication dated Jun. 3, 2015, issued by the European Patent Office in counterpart Application No. 12835343.0. cited by applicant. | International Search Report for PCT/JP2012/074380 dated Dec. 18, 2012, English Translation. cited by applicant', 1, '\\20220510\\65353acce88e4f2486a1e9346cea5702.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39700, 39702, 39701, 11);
INSERT INTO `os_patent` VALUES (23242, 'REGENERATIONSVERFAHREN UND REGENERATIONSVORRICHTUNG FÜR PULVER FÜR GESINTERTE SELTENERDMAGNETEN', '用于烧结稀土磁体粉末的再生方法和再生装置', 'DE602012034036T2', 'Provided are a method and an apparatus by which it is possible to efficiently obtain, from a molded body obtained by press-molding during the production of a rare earth sintered magnet, a regenerated alloy powder which has substantially the same particle diameter as an alloy powder used to obtain the molded body and for which oxidation has been curbed. A regeneration method for a powder that includes a rare earth element is characterized by comprising: i) a step for disposing in an oil a molded body for a rare earth sintered magnet, the molded body comprising a powder including a rare earth element; ii) a step for disposing the oil and at least a part of the molded body between a plurality of planar first crushing teeth arranged so as to face each other and planar second crushing teeth at least a portion of which are positioned between the adjacent first crushing teeth; and iii) a step for rotating at least one of the plurality of first crushing teeth and the second crushing teeth, without their coming into contact with each other, so that the first crushing teeth and second crushing teeth change the location of the second crushing teeth positioned between the adjacent plurality of first crushing teeth.', '本发明提供一种方法和装置，通过该方法和装置，可以从在稀土烧结磁体的制造过程中通过压制成型获得的成型体有效地获得具有与合金粉末基本相同的粒径的再生合金粉末。用于获得模制体并且已经抑制氧化。一种包含稀土元素的粉末的再生方法，其特征在于，包括：i）在油中配置稀土烧结磁体用成型体的步骤，所述成型体包含含有稀土元素的粉末。 ii）将油和至少一部分模制体布置在多个平面的第一破碎齿之间的步骤，所述多个平面的第一破碎齿布置成彼此面对，并且平面的第二破碎齿的至少一部分位于相邻的第一破碎齿之间牙齿; iii）旋转多个第一破碎齿和第二破碎齿中的至少一个而不使它们彼此接触的步骤，使得第一破碎齿和第二破碎齿改变第二破碎齿的位置位于相邻的多个第一破碎齿之间。', 'DE602012034036', 1348416000, 'DE602012034036T2', 1498579200, 1498579200, NULL, 1498579200, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 37, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39703, 39702, 39704, 11);
INSERT INTO `os_patent` VALUES (23243, 'Cu含有希土類-鉄-硼素系合金粉末とその製造方法', '含铜稀土 - 铁 - 硼合金粉末及其制备方法', 'JP5910437B2', '【課題】永久磁石用として使用されるCu含有希土類-鉄-硼素系合金粉末とそれを還元拡散法により低コストで効率的に製造する方法を提供。\n\n【解決手段】希土類酸化物粉末もしくは希土類酸化物粉末および希土類金属粉末と、含鉄粉末、含硼素粉末からなる原料粉末に前記酸化物粉末を還元するのに十分な量の還元剤を混合し、還元拡散法によりCu含有希土類-鉄-硼素系合金粉末を製造する方法であって、原料粉末として、さらに含銅粉末を組成範囲がCu換算で0.003〜1.5重量%となるように混合し、該混合物を不活性ガス雰囲気下で900℃〜1200℃の温度で0.5時間以上保持して熱処理し、得られた反応生成混合物を湿式処理した後、乾燥することを特徴とするCu含有希土類-鉄-硼素系合金粉末の製造方法;この製造方法により得られたCu含有希土類-鉄-硼素系合金粉末によって提供。\n\n【選択図】図1', '要解决的问题：提供用作永磁体的含铜稀土 - 铁 - 硼基合金粉末，并提供一种通过还原扩散法以低成本有效地生产它的方法。解决方案：在该方法中，将由稀土氧化物粉末或稀土氧化物粉末和稀土金属粉末，含铁粉末和含硼粉末组成的原料粉末与还原剂混合，其量足以减少氧化物通过还原扩散法制备含Cu稀土 - 铁 - 硼基合金粉末的粉末。制备含铜稀土 - 铁 - 硼基合金粉末的方法的特征在于，作为原料粉末，进一步混合含铜粉末，使其组成范围控制在0.003-1.5wt％。以Cu计，将该混合物在惰性气体气氛中在900至1,200℃保持≥0.5小时并进行热处理，并将所得反应产物混合物进行湿处理，然后干燥。通过该制备方法获得含Cu稀土 - 铁 - 硼基合金粉末。', 'JP2012215687', 1348761600, 'JP5910437B2', 1461686400, 1368028800, NULL, 1460044800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 3, 0, 0, 0, NULL, NULL, NULL, '2011212071', 'JP', 1317139200, 2, 2, NULL, NULL, 13, 0, 0, 0, 1, NULL, NULL, NULL, '田中 永一', NULL, 'JP1987004806A | JP1992035548A | JP1994000922A | JP1994248307A | JP1998233306A | JP1998280002A | JP2000223306A | JP2004006767A | JP2004091811A | JP2011061038A | WO2009122709A1', NULL, '日立金属技報、Vol.27、(2011)、34-41', 1, '\\20220510\\ab3ea533959c42a9b25bc4b074362ff6.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39705, 39707, 39706, 2);
INSERT INTO `os_patent` VALUES (23244, 'R-T-B系焼結磁石の製造方法', 'R-T-B基烧结磁体的制备方法', 'JP6086293B2', '【課題】R-T-B系焼結磁石素材とRH拡散源とを、R-T-B系焼結磁石素材の欠けの発生を低減し、長い時間をかけず、均一に撹拌することで磁気特性のばらつきを防止するR-T-B系焼結磁石の製造方法の提供。\n\n【解決手段】複数個のRH拡散源を準備する工程と、複数個の撹拌補助部材を準備する工程と、複数個のR-T-B系焼結磁石素材を準備する工程と、前記H拡散源と前記撹拌補助部材とを混合し、拡散源‐補助部材混合物を準備する工程と、前記拡散源‐補助部材混合物と前記R-T-B系焼結磁石素材とを処理室内に装入する工程と、 前記処理容器を加熱すると共に回転及び/又は揺動させることで、前記RH拡散源と前記撹拌補助部材と前記R-T-B系焼結磁石素材を連続的にまたは断続的に移動させてRH拡散処理を行う工程と、を含む、R-T-B系焼結磁石の製造方法\n\n【選択図】図1', '摘要：要解决的问题：提供一种生产RTB基烧结磁体的方法，其中通过在没有太多时间的情况下均匀地搅拌RTB基烧结磁体材料和RH扩散源同时减少缺乏的发生来防止磁特性的变化RTB系烧结磁铁材料。解决方案：制备R-T-B基烧结磁体的方法包括以下步骤：制备多个RH扩散源;准备多个搅拌辅助构件;制备多种R-T-B基烧结磁体材料;通过混合RH扩散源和搅拌辅助构件制备扩散源 - 辅助构件混合物;将扩散源 - 辅助构件混合物和R-T-B基烧结磁体材料装入处理室;通过加热和旋转和/或摆动处理容器，连续地或间歇地移动RH扩散源，搅拌辅助构件和R-T-B基烧结磁体材料。', 'JP2012215351', 1348761600, 'JP6086293B2', 1488297600, 1398009600, NULL, 1486656000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, '池田 安希子', NULL, 'JP2001011504A | JP2012169436A | WO2008139690A1 | WO2011007758A1', NULL, NULL, 1, '\\20220510\\aa7cc7dd17ba48c89d372fed6c1f3b57.png', NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 39708, 39710, 39709, 2);
INSERT INTO `os_patent` VALUES (23245, '발명의 명칭 NdFeB계 소결 자석', 'NdFeB基烧结磁体', 'KR101485281B1', '입계 확산법에 의해 제조되는 NdFeB계 소결 자석으로서 높은 보자력과 각형비를 가지며, 최대 에너지곱의 저하가적은 NdFeB계 소결 자석을 제공한다. 본 발명에 관한 NdFeB계 소결 자석은 NdFeB계 합금의 분말을 배향해 소결함으로써 제조한 기재의 표면에 부착시킨 Dy 및／또는 Tb(이하, 「Dy 및／또는 Tb」를 「RH」라고 한다)를 입계 확산 처리에 의해 상기 기재 내부의 입계로 확산시킨 NdFeB계 소결 자석으로서 RH를 부착시킨 면에 나타나고 있는입계 중의 RH의 농도 Cs(wt%)와 상기 부착면으로부터 깊이 3mm의 입계 중의 RH의 농도 Cd3(wt%)의 차이 Cs-Cd3가20wt% 이하인 것을 특징으로 한다.', '提供一种通过晶界扩散法制造的NdFeB烧结磁体，其具有高矫顽力和矩形比并且具有最小能量积的小的降低。根据本发明的NdFeB基烧结磁体的特征在于Dy和/或Tb（下文中称为“Dy和/或Tb”被称为“RH”）粘附到通过定向和烧结NdFeB-粉末而制备的基材表面上。 NdFeB基烧结磁体通过晶界扩散过程扩散到基材的晶界中，在RH附着表面上出现的晶界中RH的浓度Cs（wt％）和浓度Cd3 （wt％）Cs-Cd3为20wt％或更少。', 'KR1020137023816', 1356537600, 'KR101485281B1', 1421769600, 1385654400, NULL, 1421251200, '韩国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 18, 2, 0, 0, 0, NULL, NULL, NULL, '2011286864 | 2012026719', 'JP | JP', 1324915200, 12, 54, NULL, NULL, 3, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2011223007A | KR1020100027111A | WO2011004894A1', NULL, NULL, 1, '\\20220510\\49741481d1b043beb92d7e5e159c6f3f.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39711, 39713, 39712, 58);
INSERT INTO `os_patent` VALUES (23246, 'Sintered neodymium magnet', '烧结钕磁铁', 'EP2693450B1', 'Provided is a NdFeB system sintered magnet which is produced by the grain boundary diffusion method and yet has a high coercive force and squareness ratio with only a small decrease in the maximum energy product. A NdFeB system sintered magnet according to the present invention is a NdFeB system sintered magnet having a base material produced by orienting powder of a NdFeB system alloy and sintering the powder, with Dy and/or Tb (the \"Dy and/or Tb\" is hereinafter called RH) attached to and diffused from a surface of the base material through the grain boundary inside the base material by a grain boundary diffusion treatment, wherein the number of grain-boundary triple points at which the difference Ct-Cw between the RH content Ct (wt%) at the grain-boundary triple point and the RH content Cw (wt%) at a two-grain boundary portion leading to that grain-boundary triple point is equal to or smaller than 4 wt% is equal to or larger than 60 % of the total number of grain-boundary triple points.', '本发明提供一种NdFeB系烧结磁铁，其通过晶界扩散法制造，并且具有高矫顽力和矩形比，并且最大能量积的减少很小。根据本发明的NdFeB系烧结磁体是NdFeB系烧结磁体，其具有通过使NdFeB系合金的粉末取向并烧结该粉末而产生的基材，具有Dy和/或Tb（“Dy和/或Tb”为以下称为RH）通过晶界扩散处理附着并通过基材内部的晶界从基材表面扩散，其中，在RH含量之间的差异为Ct-Cw的晶界三重点的数量晶界三相点处的Ct（wt％）和导致该晶界三相点的双晶界处的RH含量Cw（wt％）等于或小于4wt％等于或大于超过晶界三重点总数的60％。', 'EP2012863295', 1356537600, 'EP2693450B1', 1490112000, 1391529600, NULL, 1490112000, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 23, 2, 0, 0, 0, NULL, NULL, NULL, '2011286864 | 2012026718', 'JP | JP', 1324915200, 13, 54, NULL, NULL, 6, 0, 0, 0, 2, NULL, '876', NULL, NULL, NULL, 'EP2169689A1 | JP2008266767A | JP2008270699A | WO2006043348A1 | WO2010109760A1 | WO2011004894A1', NULL, 'LI W F ET AL: \"Distribution of Dy in high-coercivity (Nd,Dy)FeB sintered magnet\", ACTA MATERIALIA, ELSEVIER, OXFORD, GB, vol. 59, no. 8, 24 January 2011 (2011-01-24), pages 3061-3069, XP028157775, ISSN: 1359-6454, DOI: 10.1016/J.ACTAMAT.2011.01.046 [retrieved on 2011-02-05] | SEPEHRI-AMIN H ET AL: \"Grain boundary structure and chemistry of Dy-diffusion processed Ndâ Feâ B sintered magnets\", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 107, no. 9, 14 May 2010 (2010-05-14), pages 9A745-9A745, XP012134249, ISSN: 0021-8979, DOI: 10.1063/1.3351247', 1, '\\20220510\\d2d974b36e9643398b55c2fdb1362d3b.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, '有效:DE | 失效:RS,NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,HU,SE,SI,MC,SK,SM,GB,IE,MK,EE,CH,MT,IS,IT,GR,AL,ES,AT,CY,CZ,PL,RO,LI,TR,NL', 39714, 39713, 39712, 58);
INSERT INTO `os_patent` VALUES (23247, 'NdFeB system sintered magnet', '钕铁硼系烧结磁铁', 'US9396851B2', 'A NdFeB system sintered magnet according to the present invention is a NdFeB system sintered magnet having a base material produced by orienting powder of a NdFeB system alloy and sintering the powder, with Dy and/or Tb (the “Dy and/or Tb” is hereinafter called RH) attached to and diffused from a surface of the base material through the grain boundary inside the base material by a grain boundary diffusion treatment, wherein the number of grain-boundary triple points at which the difference Ct−Cw between the RH content Ct (wt %) at the grain-boundary triple point and the RH content Cw (wt %) at a two-grain boundary portion leading to that grain-boundary triple point is equal to or smaller than 4 wt % is equal to or larger than 60% of the total number of grain-boundary triple points.', '根据本发明的NdFeB系烧结磁体是NdFeB系烧结磁体，其具有通过使NdFeB系合金的粉末取向并烧结该粉末而产生的基材，具有Dy和/或Tb（“Dy和/或Tb”为以下称为R  H ，通过晶界扩散处理，通过基材内部的晶界附着并扩散自基材表面，其中，晶界三重点的数量为在晶界处R  H 含量C  t （wt％）之间的差异C  t  -C  w 三重点和R  H 含量C  w （wt％）在双晶界处导致该晶界三相点等于或小于4wt％ ％等于或大于晶界三重点总数的60％。', 'US14/114656', 1356537600, 'US9396851B2', 1468857600, 1398873600, NULL, 1468857600, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 18, 2, 0, 0, 0, NULL, NULL, NULL, '2011286864 | 2012026718', 'JP | JP', 1324915200, 13, 54, NULL, NULL, 46, 0, 0, 0, 24, NULL, '880', NULL, 'KASTLER, SCOTT', 'LUK, VANESSA', 'CN101276665A | CN101276666A | CN101375352A | CN101652821A | CN101911227A | CN102308342A | CN102483979A | CN1698142A | CN1898757A | EP1793392A2 | EP1923893A1 | EP1981043A1 | EP2169689A1 | EP2239747A1 | EP2453448A1 | JP1973031074A | JP2003297622A | JP2004256877A | JP2008266767A | JP2008270699A | JP2008305908A | JP2011223007A | JP2012136778A | JP4831074B2 | KR1020100027111A | US20070151632A1 | US20080241368A1 | US20080241513A1 | US20080286595A1 | US20100182113A1 | US20100231338A1 | US20100282371A1 | US20110260816A1 | US20120025651A1 | US20120111232A1 | US20120176211A1 | US20120206227A1 | US20130135069A1 | WO2006043348A1 | WO2007088718A1 | WO2009004794A1 | WO2010009760A1 | WO2010109760A1 | WO2011004894A1 | WO2011125591A1', NULL, 'Apr. 16, 2013 International Search Report issued in International Patent Application No. PCT/JP2012/083788. | Apr. 16, 2013 Written Opinion of the International Searching Authority issued in International Patent Application No. PCT/JP2012/083786. cited by applicant | Chinese Office Action dated Jul. 8, 2014 issued in Chinese Patent Application No. 201280021386.3 (with partial translation). cited by applicant | Extended European Search Report dated Jun. 30, 2014 issued in European Patent Application No. 12861799.0. cited by applicant | F. Vial et al., \"Improvement of coercivity of sintered NdFeB permanent magnets by heat treatment,\" Journal of Magnetism and Magnetic Materials 242-245, pp. 1329-1334, (2002). cited by applicant | J.M.D. Coey, \"Rare-earth Iron Permanent Magnets,\" Clarendon press, Oxford, pp. 348-353, (1996): 2.2.2 Hydrogen decrepitation (HD). cited by applicant | Jan. 22, 2016 Office Action issued in U.S. Appl. No. 14/114,657. | Jan. 22, 2016 Office Action issued in U.S. Appl. No. 14/114,657. cited by applicant | Jan. 5, 2015 Office Action issued in U.S. Appl. No. 14/114,653. | Jul. 29, 2015 Office Action issued in European Patent Application No. 12861799.0. cited by applicant | Korean Office Action dated Sep. 17, 2014 issued in Korean Patent Application No. 10-2013-7023816 (with translation). cited by applicant | Li et al., \"Distribution of Dy in high-coercivity (Nd,Dy)-Fe-B sintered magnet,\" Acta Materialia, vol. 59, 2011, pp. 3061-3069. cited by applicant | Mar. 29, 2016 Office Action issued in European Patent Application No. 12863295.7. | May 14, 2015 Office Action issued in U.S. Appl. No. 14/114,653. | May 19, 2016 Office Action issued in U.S. Appl. No. 14/114,657. | May 19, 2016 Office Action issued in U.S. Appl. No. 14/114,657. cited by applicant. | May 20, 2015 Office Action issued in Chinese Patent Application No. 201280021367.0. | May 8, 2014 Office Action issued in Chinese Patent Application No. 201280021367.0 (with translation). | Oct. 28, 2015 Office Action issued in Chinese Patent Application No. 201280021381.0. cited by applicant | Sep. 14, 2015 Office Action issued in Chinese Patent Application No. 201280021354.3. cited by applicant | Sep. 24, 2013 Office Action issued in Japanese Patent Application No. 2013-536354 (with English translation). cited by applicant | Sepehri-Amin et al., \"Grain boundary structure and chemistry of Dy-diffusion processed Nd-Fe-B sintered magnets,\" Journal of Applied Physics, vol. 107, 2010, pp. 09A745-1-09A745-3. cited by applicant | U.S. Appl. No. 14/114,653 in the name of Sagawa et al., filed Oct. 29, 2013. | U.S. Appl. No. 14/114,653 in the name of Sagawa et al., filed Oct. 29, 2013. cited by applicant', 1, '\\20220510\\20e2fe128ced4adba946ab0e2c5bdd32.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39714, 39713, 39712, 58);
INSERT INTO `os_patent` VALUES (23248, 'NdFeB系焼結磁石', 'NdFeB系焼结磁石', 'JP5400256B1', '粒界拡散法によって製造されるNdFeB系焼結磁石であって、高い保磁力と角型比を有し、最大エネルギー積の低下の少ないNdFeB系焼結磁石を提供することである。本発明に係るNdFeB系焼結磁石は、NdFeB系合金の粉末を配向し、焼結することにより製造した基材の表面に付着させたDy及び/又はTb(以下、「Dy及び/又はTb」を「RH」とする)を、粒界拡散処理によって該基材内部の粒界に拡散させたNdFeB系焼結磁石であって、粒界三重点におけるRHの濃度Ct(wt%)と、該粒界三重点に繋がる二粒子粒界部におけるRHの濃度Cw(wt%)の差Ct-Cwが4wt%以下となる粒界三重点の数が、粒界三重点の総数の60%以上、であることを特徴とする。', '发明内容本发明的目的是提供一种通过晶界扩散法制造的NdFeB系烧结磁体，其具有高的矫顽力和矩形比，并且最大能量积的降低小。 根据本发明的NdFeB基烧结磁体，将NdFeB基合金粉末定向，将Dy和/或Tb附着到通过烧结产生的基板表面上（以下称为“ Dy和/或Tb” 是Rd^ h））是通过晶界扩散处理扩散到母材内部晶界的NdFeB系烧结磁铁，其浓度为C（ 与晶界三点连接的二粒晶界部分中的 Ť）（wt％）和R ^ h的浓度C w（wt％）的差C Ť-C w 为4 wt％以下 晶界三相点的数量为晶界三相点的总数的60％以上。', 'JP2013536352', 1356537600, 'JP5400256B1', 1390924800, 1390924800, NULL, 1383235200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 19, 2, 0, 0, 0, NULL, NULL, NULL, '2011286864 | 2012026718', 'JP | JP', 1324915200, 13, 54, NULL, NULL, 5, 0, 0, 0, 0, NULL, '863', NULL, '田中 純一', NULL, 'JP2008266767A | JP2008270699A | WO2006043348A1 | WO2010109760A1 | WO2011004894A1', NULL, NULL, 1, '\\20220510\\57e93030a289494fb8a71e320f8e4a2c.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39714, 39713, 39712, 58);
INSERT INTO `os_patent` VALUES (23249, 'NdFeB系焼結磁石及び該NdFeB系焼結磁石の製造方法', 'NdFeB基烧结磁体和NdFeB基烧结磁体的制造方法', 'JP5400255B1', '粒界拡散法の基材として使用したとき、希土類リッチ相を通してRHが拡散しやすく、さらに基材そのものの保磁力、最大エネルギー積及び角型比の高いNdFeB系焼結磁石及び該NdFeB系焼結磁石の製造方法を提供する。本発明に係るNdFeB系焼結磁石は、NdFeB系焼結磁石中の主相粒子の平均粒径が4.5μm以下、前記NdFeB系焼結磁石全体の炭素含有率が1000ppm以下、前記NdFeB系焼結磁石中の粒界三重点における希土類リッチ相の体積の総計に対する、該希土類リッチ相中の炭素リッチ相の体積の総計の比率が50%以下、であることを特徴とする。', '当R^ h 用作晶界扩散法的基础材料时，它很容易在富稀土相中扩散，并且该基础材料本身具有高矫顽力，最大能量乘积和高矩形比的NdFeB系统烧结磁体和NdFeB。 提供一种用于制造烧结磁体的方法。 本发明的NdFeB系烧结磁体在NdFeB系烧结磁体中主相粒子的平均粒径为4.5μm以下，整个NdFeB系烧结磁体的碳含量为1000ppm以下，NdFeB系烧结体。 磁体中的晶界三点处的富含稀土的相中的富含碳的相的总体积与富含稀土的相的总体积的比为50％以下。', 'JP2013536351', 1356537600, 'JP5400255B1', 1390924800, 1390924800, NULL, 1383235200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 16, 2, 0, 0, 0, NULL, NULL, NULL, '2011286864', 'JP', 1324915200, 15, 54, NULL, NULL, 5, 5, 2, 2, 0, NULL, '863', NULL, '田中 純一', NULL, 'JP2008266767A | JP2008270699A | WO2006043348A1 | WO2010109760A1 | WO2011004894A1', 'DE102016101890A1 | JP6271425B2 | JPWO2014017249A1 | US10522276B2 | US9837207B2', NULL, 1, '\\20220510\\c3bbf1465ed147268a075435634ffc85.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 39715, 39713, 39712, 58);
INSERT INTO `os_patent` VALUES (23250, 'NdFeB system sintered magnet and method for producing the same', '钕铁硼系烧结磁铁及其制造方法', 'US9028624B2', 'Provided is a NdFeB sintered magnet which can be used in the grain boundary diffusion method as a base material in which RH can be easily diffused through the rare-earth rich phase and which itself has a high coercive force, a high maximum energy product and a high squareness ratio, as well as a method for producing such a magnet. A NdFeB system sintered has an average grain size of the main-phase grains magnet is equal to or smaller than 4.5 μm, the carbon content of the entire NdFeB system sintered magnet is equal to or lower than 1000 ppm, and the percentage of the total volume of a carbon rich phase in a rare-earth rich phase at a grain-boundary triple point in the NdFeB system sintered magnet to the total volume of the rare-earth rich phase is equal to or lower than 50%.', '本发明提供一种NdFeB烧结磁铁，其可以用于晶界扩散法作为基材，其中R  H 可以容易地通过富稀土相扩散并且其本身具有高矫顽力，高最大能量积和高矩形比，以及制造这种磁铁的方法。烧结的NdFeB系统的主相颗粒磁体的平均晶粒尺寸等于或小于4.5μm，整个NdFeB系烧结磁体的碳含量等于或低于1000ppm，并且占总数的百分比在NdFeB系烧结磁体中的晶界三相点处的富稀土相中的富碳相的体积相对于稀土富集相的总体积等于或小于50％。', 'US14/113961', 1356537600, 'US9028624B2', 1431360000, 1415203200, NULL, 1431360000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 2, 0, 0, 0, NULL, NULL, NULL, '2011286864', 'JP', 1324915200, 15, 54, NULL, NULL, 44, 4, 1, 1, 16, NULL, '880', NULL, 'ROE, JESSEE', NULL, 'CN101276665A | CN101276666A | CN101375352A | CN101652821A | CN102308342A | CN102483979A | CN1698142A | CN1898757A | EP1793392A2 | EP1923893A1 | EP1981043A1 | EP2169689A1 | EP2453448A1 | JP2003297622A | JP2004256877A | JP2008266767A | JP2008270699A | JP2008305908A | JP2011223007A | JP2012136778A | JP4831074B2 | KR1020100027111A | US20070151632A1 | US20080241368A1 | US20080241513A1 | US20080286595A1 | US20100182113A1 | US20100231338A1 | US20100282371A1 | US20110260816A1 | US20120025651A1 | US20120111232A1 | US20120176211A1 | US20120206227A1 | US20130135069A1 | WO2006043348A1 | WO2007088718A1 | WO2009004794A1 | WO2010009760A1 | WO2010109760A1 | WO2011004894A1 | WO2011125591A1', 'EP3913644A1 | US10522276B2 | US20150125336A1 | US9837207B2', 'Apr. 16, 2013 International Search Report issued in International Patent Application No. PCT/JP2012/083786. | Apr. 16, 2013 Written Opinion of the International Searching Authority issued in International Patent Application No. PCT/JP2012/083786. cited by applicant | Chinese Office Action dated Jul. 8, 2014 issued in Chinese Patent Application No. 201280021386.3 (with partial translation). cited by applicant | Extended European Search Report dated Jun. 30, 2014 issued in European Patent Application No. 12861799.0. cited by applicant | F. Vial et al., \"Improvement of coercivity of sintered NdFeB permanent magnets by heat treatment,\" Journal of Magnetism and Magnetic Materials 242-245, pp. 1329-1334, (2002). cited by applicant | J.M.D. Coey, \"Rare-earth Iron Permanent Magnets,\" Clarendon press, Oxford, pp. 348-353, (1996): 2.2.2 Hydrogen decrepitation (HD). cited by applicant | Jan. 5, 2015 Office Action issued in Chinese Patent Application No. 201280021367.0. cited by applicant. | Jan. 5, 2015 Office Action issued in U.S. Appl. No. 14/114,656. | Jan. 5, 2015 Office Action issued in U.S. Appl. No. 14/114,656. cited by applicant | Korean Office Action dated Sep. 17, 2014 issued in Korean Patent Application No. 10-2013-7023816 (with translation). cited by applicant | Li et al., \"Distribution of Dy in high-coercivity (Nd,Dy)--Fe--B sintered magnet,\" Acta Materialia, vol. 59, 2011, pp. 3061-3069. cited by applicant | May 8, 2014 Office Action issued in Chinese Patent Application No. 201280021367.0 (with translation). | Sep. 24, 2013 Office Action issued in Japanese Patent Application No. 2013-536354 (with English translation). cited by applicant | Sepehri-Amin et al., \"Grain boundary structure and chemistry of Dy-diffusion processed Nd--Fe--B sintered magnets,\" Journal of Applied Physics, vol. 107, 2010, pp. 09A745-1-09A745-3. cited by applicant | U.S. Appl. No. 14/114,656 in the name of Sagawa et al. filed Oct. 29, 2013. | U.S. Appl. No. 14/114,657 in the name of Sagawa et al. filed Oct. 29, 2013. cited by applicant', 1, '\\20220510\\10bf7bdcc6fc4839ac6811c144e00b42.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 39715, 39713, 39712, 58);
INSERT INTO `os_patent` VALUES (23251, 'NdFeB系焼結磁石', 'NdFeB系焼结磁石', 'JP5503086B2', '粒界拡散法によって製造されるNdFeB系焼結磁石であって、高い保磁力と角型比を有し、最大エネルギー積の低下の少ないNdFeB系焼結磁石を提供する。ことである本発明に係るNdFeB系焼結磁石は、NdFeB系合金の粉末を配向し、焼結することにより製造した基材の表面に付着させたDy及び/又はTb(以下、「Dy及び/又はTb」を「RH」とする)を、粒界拡散処理によって該基材内部の粒界に拡散させたNdFeB系焼結磁石であって、RHを付着させた面に現れている粒界中のRHの濃度Cs(wt%)と、前記付着面から深さ3mmの粒界中のRHの濃度Cd3(wt%)との差Cs-Cd3が20wt%以下、であることを特徴とする。', '本发明提供一种NdFeB系烧结磁铁，其通过晶界扩散法制造，并且具有高矫顽力和矩形比，并且最大能量积的减少很小。根据本发明的NdFeB系烧结磁体是NdFeB系烧结磁体，其具有通过使NdFeB系合金的粉末取向并烧结该粉末而产生的基材，具有Dy和/或Tb（“Dy和/或Tb”为以下称为RH）通过晶界扩散处理附着并通过基材内部的晶界从基材表面扩散，其中，在RH含量C s（wt％）之间的差值C s -C d3到达附着有RH的表面的晶界，与上述安装面3mm的深度的晶界的RH含量C d3（wt％）为20重量％以下。', 'JP2013536353', 1356537600, 'JP5503086B2', 1401206400, 1401206400, NULL, 1395244800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 19, 2, 0, 0, 0, NULL, NULL, NULL, '2011286864 | 2012026719', 'JP | JP', 1324915200, 12, 54, NULL, NULL, 5, 0, 0, 0, 0, NULL, '863', NULL, '田中 純一', NULL, 'WO2006043348A1 | WO2007088718A1 | WO2009004794A1 | WO2010109760A1 | WO2011004894A1', NULL, NULL, 1, '\\20220510\\d9270213dd7b4f608847ed969d485dc2.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39711, 39713, 39712, 58);
INSERT INTO `os_patent` VALUES (23252, 'Manufacturing method for a sintered neodymium magnet', '一种烧结钕磁铁的制造方法', 'EP2696355B1', 'Provided is a NdFeB system sintered magnet which can be used in the grain boundary diffusion method as a base material in which RH can be easily diffused through the rare-earth rich phase and which itself has a high coercive force, a high maximum energy product and a high squareness ratio, as well as a method for producing such a NdFeB system sintered magnet. A NdFeB system sintered magnet according to the present invention aimed at solving the aforementioned problem is characterized in that the average grain size of the main-phase grains in the NdFeB system sintered magnet is equal to or smaller than 4.5 µm, the carbon content of the entire NdFeB system sintered magnet is equal to or lower than 1000 ppm, and the percentage of the total volume of a carbon rich phase in a rare-earth rich phase at a grain-boundary triple point in the NdFeB system sintered magnet to the total volume of the rare-earth rich phase is equal to or lower than 50 %.', '本发明提供一种NdFeB系烧结磁铁，其可以在晶界扩散方法中用作基材，其中RH可以容易地通过富稀土相扩散，并且其本身具有高矫顽力，高的最大能量积和高矩形比，以及制造这种NdFeB系烧结磁铁的方法。旨在解决上述问题的根据本发明的NdFeB系烧结磁体的特征在于，NdFeB系烧结磁体中的主相晶粒的平均晶粒尺寸等于或小于4.5μm，碳含量为整个NdFeB系烧结磁体等于或小于1000ppm，并且NdFeB系烧结磁体中晶界三相点富稀土相中富碳相的总体积占总体积的百分比稀土富集相的含量等于或小于50％。', 'EP2012861799', 1356537600, 'EP2696355B1', 1467734400, 1392134400, NULL, 1467734400, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 19, 2, 0, 0, 0, NULL, NULL, NULL, '2011286864', 'JP', 1324915200, 15, 54, NULL, NULL, 8, 0, 0, 0, 0, NULL, '876', NULL, NULL, NULL, 'EP1793392A2 | EP1923893A1 | JP2008266767A | JP2008270699A | US20070151632A1 | WO2006043348A1 | WO2010109760A1 | WO2011004894A1', NULL, NULL, 1, '\\20220510\\1875f35e2079485f8bf432de83d2dbc6.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, '有效:DE | 失效:RS,NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,HU,SE,SI,MC,SK,SM,GB,IE,MK,EE,CH,MT,IS,IT,GR,AL,ES,AT,CY,CZ,PL,RO,LI,TR,NL', 39715, 39713, 39712, 58);
INSERT INTO `os_patent` VALUES (23253, 'NdFeB系焼結磁石', 'NdFeB系焼结磁石', 'JP5553461B2', '粒界拡散法によって製造されるNdFeB焼結磁石であって、高い保磁力と角型比を有し、最大エネルギー積の低下の少ないNdFeB焼結磁石を提供する。本発明に係るNdFeB焼結磁石は、NdFeB合金の粉末を配向し、焼結することにより製造した基材の表面に付着させたDy及び/又はTb(以下、「Dy及び/又はTb」を「RH」とする)を、粒界拡散処理によって該基材内部の粒界に拡散させたNdFeB焼結磁石であって、RHを付着させた面から深さ3mmまでの範囲内において、粒界中のRHの濃度Cgx(wt%)と、同じ深さにおける、基材を構成する粒子である主相粒子中のRHの濃度Cx(wt%)との差Cgx-Cxが3wt%以上、であることを特徴とする。', '由晶界扩散方法制造的NDFEB烧结磁体是高矫顽力和方形比,并提供具有低电平能量产品水平的NDFEB烧结磁体。根据本发明的NdFeB烧结磁体是Dy和/或Tb(以下称为通过对准并烧结NdFeB合金的粉末而产生的基材表面的Dy和/或Tb“。RH“通过晶界扩散处理,rH距离附着表面高达3毫米深度的晶界中的rH浓度C.gx(wt%),主相粒子中的r,是在相同深度下构成基板的颗粒H浓度C.x差异(wt%)cgx-Cx其特征在于3wt%或更多。', 'JP2013536354', 1356537600, 'JP5553461B2', 1405440000, 1405440000, NULL, 1401984000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 19, 2, 0, 0, 0, NULL, NULL, NULL, '2011286864 | 2012026720', 'JP | JP', 1324915200, 14, 54, NULL, NULL, 5, 0, 0, 0, 0, NULL, '863', NULL, '田中 純一', NULL, 'WO2006043348A1 | WO2007088718A1 | WO2009004794A1 | WO2010109760A1 | WO2011004894A1', NULL, NULL, 1, '\\20220510\\18f99a822b394c94998a1619f066b1bb.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39716, 39713, 39712, 58);
INSERT INTO `os_patent` VALUES (23254, '발명의 명칭 NdFeB계 소결 자석', 'NdFeB基烧结磁体', 'KR101485282B1', '입계 확산법에 의해 제조되는 NdFeB 소결 자석으로서 높은 보자력과 각형비를 가지며, 최대 에너지곱의 저하가적은 NdFeB 소결 자석을 제공한다. 본 발명에 관한 NdFeB 소결 자석은 NdFeB 합금의 분말을 배향해 소결함으로써제조한 기재의 표면에 부착시킨 Dy 및/또는 Tb(이하, 「Dy 및/또는 Tb」를 「RH」라고 한다)를 입계 확산 처리에의해 상기 기재 내부의 입계로 확산시킨 NdFeB 소결 자석으로서, RH를 부착시킨 면으로부터 깊이 3mm까지의 범위내에서, 입계 중의 RH의 농도 Cgx(wt%)와 동일한 깊이에서의 기재를 구성하는 입자인 주상 입자 중의 RH의 농도Cx(wt%)의 차이 Cgx-Cx가 3wt% 이상인 것을 특징으로 한다.', '它具有高矫顽力和矩形比，作为通过晶界扩散法制造的NdFeB烧结磁体和其中需要最大能量产物的低劣化的NdFeB烧结磁体。本发明的NdFeB烧结磁铁位于柱状晶粒中的RH的胸部，该晶粒是晶界中RH的胸部与侧面的C gx（wt％）深度组织相同深度的材料的粒子。将RH附加在3mm的范围内，C x（wt％）的差值C gx-C x（重量％）为3wt％或更大，因为Dy附着在其制造的材料表面上，使其对准的NdFeB合金的粉末烧结和/或或者，通过晶界扩散处理将扩散Tb（“Dy和/或Tb”在下文中称为“R（sub）H（/ sub）”）的NdFeB烧结磁体扩散到内部材料的晶界。', 'KR1020137023817', 1356537600, 'KR101485282B1', 1421769600, 1384876800, NULL, 1421251200, '韩国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 19, 2, 0, 0, 0, NULL, NULL, NULL, '2011286864 | 2012026720', 'JP | JP', 1324915200, 14, 54, NULL, NULL, 3, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2011223007A | KR1020100027111A | WO2011004894A1', NULL, NULL, 1, '\\20220510\\931d4872cd264d5cab44709970619771.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39716, 39713, 39712, 58);
INSERT INTO `os_patent` VALUES (23255, 'NdFeB system sintered magnet', '钕铁硼系烧结磁铁', 'US9412505B2', 'A NdFeB system sintered magnet produced by the grain boundary diffusion method and has a high coercive force and squareness ratio with only a small decrease in the maximum energy product. A NdFeB system sintered magnet having a base material produced by orienting powder of a NdFeB system alloy and sintering the powder, with Dy and/or Tb (the “Dy and/or Tb” is hereinafter called RH) attached to and diffused from a surface of the base material through the grain boundary inside the base material by a grain boundary diffusion treatment, wherein the difference Cgx-Cx between the RH content Cgx (wt %) in the grain boundary and the RH content Cx (wt %) in main-phase grains which are grains constituting the base material at the same depth within a range from the surface to which RH is attached to a depth of 3 mm is equal to or larger than 3 wt %.', '一种NdFeB系烧结磁体，采用晶界扩散法制造，矫顽力和矩形比高，最大能量积减少很少。一种NdFeB系烧结磁体，其具有通过使NdFeB系合金的粉末取向并用Dy和/或Tb烧结该粉末而制备的基材（“Dy和/或Tb”在下文中称为R  H  ）通过晶界扩散处理，附着于基材表面并通过基材内部的晶界扩散，其中差C  gx  -C  x 晶界中R  H 含量C  gx （wt％）和R  H 含量C  x （作为构成基材的晶粒的主相晶粒中的重量％，在从附着有R  H 的表面到3mm的深度的范围内的相同深度处等于或大于3重量％。', 'US14/114653', 1356537600, 'US9412505B2', 1470672000, 1394035200, NULL, 1470672000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 18, 2, 0, 0, 0, NULL, NULL, NULL, '2011286864 | 2012026720', 'JP | JP', 1324915200, 14, 54, NULL, NULL, 46, 2, 0, 0, 24, NULL, '880', NULL, 'KASTLER, SCOTT', 'LUK, VANESSA', 'CN101276665A | CN101276666A | CN101375352A | CN101652821A | CN101911227A | CN102308342A | CN102483979A | CN1698142A | CN1898757A | EP1793392A2 | EP1923893A1 | EP1981043A1 | EP2169689A1 | EP2239747A1 | EP2453448A1 | JP1973031074A | JP2003297622A | JP2004256877A | JP2008266767A | JP2008270699A | JP2008305908A | JP2011223007A | JP2012136778A | JP4831074B2 | KR1020100027111A | US20070151632A1 | US20080241368A1 | US20080241513A1 | US20080286595A1 | US20100182113A1 | US20100231338A1 | US20100282371A1 | US20110260816A1 | US20120025651A1 | US20120111232A1 | US20120176211A1 | US20120206227A1 | US20130135069A1 | WO2006043348A1 | WO2007088718A1 | WO2009004794A1 | WO2010009760A1 | WO2010109760A1 | WO2011004894A1 | WO2011125591A1', 'US10290408B2 | US10468166B2', 'Apr. 16, 2013 International Search Report issued in International Patent Application No. PCT/JP2012/083786. | Apr. 16, 2013 Written Opinion of the International Searching Authority issued in International Patent Application No. PCT/JP2012/083788. cited by applicant | Chinese Office Action dated Jul. 8, 2014 issued in Chinese Patent Application No. 201280021386.3 (with partial translation). cited by applicant | F. Vial et al., \"Improvement of coercivity of sintered NdFeB permanent magnets by heat treatment,\" Journal of Magnetism and Magnetic Materials 242-245, pp. 1329-1334, (2002). cited by applicant | J.M.D. Coey, \"Rare-earth Iron Permanent Magnets,\" Clarendon press, Oxford, pp. 348-353, (1996): 2.2.2 Hydrogen decrepitation (HD). cited by applicant | Jan. 22, 2016 Office Action issued in U.S. Appl. No. 14/114,657. | Jan. 22, 2016 Office Action issued in U.S. Appl. No. 14/114,657. cited by applicant | Jan. 5, 2015 Office Action issued in Chinese Patent Application No. 201280021367.0. | Jan. 5, 2015 Office Action issued in U.S. Appl. No. 14/114,656. | Jul. 1, 2014 Extended European Search Report issued in European Application No. 12863911.9. | Jul. 29, 2015 Office Action issued in European Patent Application No. 12861799.0. | Jul. 9, 2015 Extended European Search Report issued in European Patent Application No. 12863318.7. cited by applicant | Korean Office Action dated Sep. 17, 2014 issued in Korean Patent Application No. 10-2013-7023816 (with translation). cited by applicant | Li, W.F. et al., \"Distribution of Dy in High-Coercivity (Nd,Dy)--Fe--B Sintered Magnet,\" Acta Materialia, Mar. 2011, pp. 3061-3069, vol. 59. cited by applicant | Mar. 29, 2016 Office Action issued in European Patent Application No. 12863295.7. cited by applicant | May 19, 2016 Office Action issued in U.S. Appl. No. 14/114,657. | May 19, 2016 Office Action issued in U.S. Appl. No. 14/114,657. cited by applicant. | May 8, 2014 Office Action issued in Chinese Patent Application No. 201280021367.0 (with translation). | Oct. 28, 2015 Office Action issued in Chinese Patent Application No. 201280021381.0. cited by applicant | Sep. 14, 2015 Office Action issued in Chinese Patent Application No. 201280021354.3. cited by applicant | Sep. 24, 2013 Office Action issued in Japanese Patent Application No. 2013-536353 (with translation). cited by applicant | Sepehri-Amin, H. et al., \"Grain Boundary Structure and Chemistry of Dy-Diffusion Processed Nd--Fe--B Sintered Magnets,\" Journal of Applied Physics, May 2010, pp. 09A745.1-09A745.3 vol. 107. cited by applicant | U.S. Appl. No. 14/114,656 in the name of Sagawa et al., filed Oct. 29, 2013. cited by applicant | U.S. Appl. No. 14/114,657 in the name of Sagawa et al., filed Oct. 29, 2013.', 1, '\\20220510\\5fe1bc2df7914a818a48bd8de47a9e34.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39716, 39713, 39712, 58);
INSERT INTO `os_patent` VALUES (23256, 'Sintered neodymium magnet', '烧结钕磁铁', 'EP2800108B1', 'Provided is a NdFeB system sintered magnet which is produced by the grain boundary diffusion method and yet has a high coercive force and squareness ratio with only a small decrease in the maximum energy product. A NdFeB system sintered magnet according to the present invention is a NdFeB system sintered magnet having a base material produced by orienting powder of a NdFeB system alloy and sintering the powder, with Dy and/or Tb (the \"Dy and/or Tb\" is hereinafter called RH) attached to and diffused from a surface of the base material through the grain boundary inside the base material by a grain boundary diffusion treatment, wherein the difference Cs-Cd3 between the RH content Cs (wt%) in the grain boundary reaching the surface to which RH is attached and the RH content Cd3 (wt%) in the grain boundary at a depth of 3 mm from the aforementioned attachment surface is equal to or smaller than 20 wt%.', '本发明提供一种NdFeB系烧结磁铁，其通过晶界扩散法制造，并且具有高矫顽力和矩形比，并且最大能量积的减少很小。根据本发明的NdFeB系烧结磁体是NdFeB系烧结磁体，其具有通过使NdFeB系合金的粉末取向并烧结该粉末而产生的基材，具有Dy和/或Tb（“Dy和/或Tb”为以下称为RH）通过晶界扩散处理附着并通过基材内部的晶界从基材表面扩散，其中晶界中的RH含量Cs（wt％）之间的差Cs-Cd3附着有RH的表面和距上述附着表面3mm深处的晶界中的RH含量Cd3（wt％）等于或小于20wt％。', 'EP2012863318', 1356537600, 'EP2800108B1', 1523376000, 1415116800, NULL, 1523376000, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 23, 2, 0, 0, 0, NULL, NULL, NULL, '2011286864 | 2012026719', 'JP | JP', 1324915200, 12, 54, NULL, NULL, 7, 0, 0, 0, 1, NULL, '876', NULL, NULL, NULL, 'EP2169689A1 | EP2239747A1 | US20080241513A1 | WO2007088718A1 | WO2009004794A1 | WO2010109760A1 | WO2011004894A1', NULL, 'SEPEHRI-AMIN H ET AL: \"Grain boundary structure and chemistry of Dy-diffusion processed Nd-Fe-B sintered magnets\", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 107, no. 9, 14 May 2010 (2010-05-14), pages 9A745-9A745, XP012134249, ISSN: 0021-8979, DOI: 10.1063/1.3351247', 1, '\\20220510\\9e28b763afd14fb3881d34e3414c9c1c.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, '有效:DE | 失效:RS,NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,HU,SE,SI,MC,SK,SM,GB,IE,MK,EE,CH,MT,IS,IT,GR,AL,ES,AT,CY,CZ,PL,RO,LI,TR,NL', 39711, 39713, 39712, 58);
INSERT INTO `os_patent` VALUES (23257, 'NdFeB system sintered magnet', '钕铁硼系烧结磁铁', 'US10468166B2', 'A NdFeB system sintered magnet produced by the grain boundary diffusion method that has a high coercive force and squareness ratio with only a small decrease in the maximum energy product. The NdFeB system sintered magnet has a base material produced by orienting powder of a NdFeB system alloy and sintering the powder, with Dy and/or Tb (the “Dy and/or Tb” is hereinafter called RH) attached to and diffused from a surface of the base material through the grain boundary inside the base material by a grain boundary diffusion treatment, wherein the difference Cs-Cd3 between the RH content Cs (wt %) in the grain boundary reaching the surface to which RH is attached and the RH content Cd3 (wt %) in the grain boundary at a depth of 3 mm from the aforementioned attachment surface is equal to or smaller than 20 wt %.', '通过晶界扩散法制得的NdFeB系烧结磁铁，其矫顽力和矩形比高，最大能量乘积仅降低很小。 NdFeB系烧结磁体具有通过对NdFeB系合金的粉末进行定向并烧结该粉末而制造的基材，其中Dy和/或Tb（以下称为“ Dy和/或Tb”被称为RH）附着并扩散。通过晶粒边界扩散处理从基材的表面穿过基材内部的晶界，其中RH含量Cs（wt％）之间的差Cs-C3天到达附着有RH的表面的晶界，并且在距上述附着面3mm的深度处的晶界中的RH的含量C3天（wt％）等于或小于20重量％。', 'US14/114657', 1356537600, 'US10468166B2', 1572883200, 1394035200, NULL, 1572883200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 19, 2, 0, 0, 0, NULL, NULL, NULL, '2011286864 | 2012026719', 'JP | JP', 1324915200, 12, 54, NULL, NULL, 53, 0, 0, 0, 31, NULL, '880', NULL, 'DUNN, COLLEEN P', 'LIANG, ANTHONY M', 'CN101276665A | CN101276666A | CN101375352A | CN101652821A | CN101770843A | CN101911227A | CN102087917A | CN102308342A | CN102483979A | CN1114779A | CN1698142A | CN1898757A | CN1983471A | EP1793392A2 | EP1923893A1 | EP1981043A1 | EP2169689A1 | EP2239747A1 | EP2453448A1 | JP2004256877A | JP2004319425A | JP2008266767A | JP2008270699A | JP2009133487A | JP2011223007A | JP2012136778A | JP4831074B2 | KR1020100027111A | US20070151632A1 | US20080241368A1 | US20080241513A1 | US20080286595A1 | US20100182113A1 | US20100231338A1 | US20100282371A1 | US20110260816A1 | US20120025651A1 | US20120111232A1 | US20120176211A1 | US20120206227A1 | US20130135069A1 | US20140062632A1 | US7618497B2 | US9412505B2 | WO2006043348A1 | WO2007088718A1 | WO2009004794A1 | WO2010009760A1 | WO2010109760A1 | WO2011004894A1 | WO2011125591A1 | WO2013100010A1', NULL, 'Apr. 16, 2013 International Search Report issued in International Patent Application No. PCT/JP2012/083788. | Apr. 16, 2013 Written Opinion of the International Searching Authority issued in International Patent Application No. PCT/JP2012/083789. cited by applicant | Aug. 3, 2018 Decision of Rejection issued in Chinese Patent Application No. 201510685013.1. cited by applicant | Chinese Office Action dated Jul. 8, 2014 issued in Chinese Patent Application No. 201280021386.3 (with partial translation). cited by applicant | F. Vial et al., \"Improvement of coercivity of sintered NdFeB permanent magnets by heat treatment,\" Journal of Magnetism and Magnetic Materials 242-245, pp. 1329-1334, (2002). cited by applicant | J.M.D. Coey, \"Rare-earth Iron Permanent Magnets,\" Clarendon press, Oxford, pp. 348-353, (1996): 2.2.2 Hydrogen decrepitation (HD). cited by applicant | Jan. 24, 2019 Notice of Allowance issued in U.S. Appl. No. 15/189,801. | Jan. 24, 2019 Notice of Allowance issued in U.S. Appl. No. 15/189,801. cited by applicant. | Jan. 29, 2019 Notification of Contested Trial issued in Chinese Patent Application No. 201510685013.1. cited by applicant | Jan. 31, 2018 Office Action issued in Chinese Patent Application No. 201510685013.1. | Jan. 5, 2015 Office Action issued in U.S. Appl. No. 14/114,653. | Jan. 5, 2015 Office Action issued in U.S. Appl. No. 14/114,656. cited by applicant | Jul. 10, 2018 Office Action issued in European Patent Application No. 12863911.9. | Jul. 7, 2016 Office Action issued in European Patent Application No. 12 863 318.7. cited by applicant | Jul. 9, 2015 Extended European Search Report issued in European Patent Application No. 12863318.7. cited by applicant | Jun. 20, 2018 Office Action issued in U.S. Appl. No. 15/189,801. | Jun. 20, 2018 Office Action issued in U.S. Appl. No. 15/189,801. cited by applicant | Korean Office Action dated Sep. 17, 2014 issued in Korean Patent Application No. 10-2013-7023816 (with translation). cited by applicant | Li, W.F. et al., \"Distribution of Dy in High-Coercivity (Nd,Dy)-Fe--B Sintered Magnet,\" Acta Materialia, Mar. 2011, pp. 3061-3069, vol. 59. cited by applicant | Mar. 29, 2016 Office Action issued in European Patent Application No. 12863295.7. cited by applicant | May 14, 2015 Office Action issued in U.S. Appl. No. 14/114,653. | May 14, 2015 Office Action issued in U.S. Appl. No. 14/114,653. cited by applicant | May 20, 2015 Office Action issued in Chinese Patent Application No. 201280021367.0. | May 27, 2019 Decision of Reexamination issued in Chinese Patent Application No. 20150685013.1. cited by applicant | May 8, 2014 Office Action issued in Chinese Patent Application No. 201280021367.0 (with translation). | Oct. 28, 2015 Office Action issued in Chinese Patent Application No. 201280021381.0. cited by applicant | Sep. 14, 2015 Office Action issued in Chinease Patent Application No. 201280021354.3. cited by applicant | Sep. 24, 2013 Office Action issued in Japanese Patent Application No. 2013-536353 (with English translation). cited by applicant | Sepehri-Amin, H. et al., \"Grain Boundary Structure and Chemistry of Dy-Diffusion Processed Nd--Fe--B Sintered Magnets,\" Journal of Applied Physics, May 2010, pp. 09A745.1-09A745.3 vol. 107. cited by applicant | U.S. Appl. No. 14/113,961 in the name of Sagawa et al. filed Oct. 25, 2013. | U.S. Appl. No. 14/114,656 in the name of Sagawa et al. filed Oct. 29, 2013. cited by applicant', 1, '\\20220510\\0e8f5f4f783d4ea6ac7fba9fec8aa9e5.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39711, 39713, 39712, 58);
INSERT INTO `os_patent` VALUES (23258, 'Ndfeb system sintered magnet', '钕铁硼系烧结磁铁', 'EP3059743B1', 'Provided is a NdFeB system sintered magnet which can be used in the grain boundary diffusion method as a base material in which RH can be easily diffused through the rare-earth rich phase and which itself has a high coercive force, a high maximum energy product and a high squareness ratio, as well as a method for producing such a NdFeB system sintered magnet. A NdFeB system sintered magnet according to the present invention aimed at solving the aforementioned problem is characterized in that the average grain size of the main-phase grains in the NdFeB system sintered magnet is equal to or smaller than 4.5 µm, the carbon content of the entire NdFeB system sintered magnet is equal to or lower than 1000 ppm, and the percentage of the total volume of a carbon rich phase in a rare-earth rich phase at a grain-boundary triple point in the NdFeB system sintered magnet to the total volume of the rare-earth rich phase is equal to or lower than 50 %.', '本发明提供一种NdFeB系烧结磁铁，其可以在晶界扩散方法中用作基材，其中RH可以容易地通过富稀土相扩散，并且其本身具有高矫顽力，高的最大能量积和高矩形比，以及制造这种NdFeB系烧结磁铁的方法。旨在解决上述问题的根据本发明的NdFeB系烧结磁体的特征在于，NdFeB系烧结磁体中的主相晶粒的平均晶粒尺寸等于或小于4.5μm，碳含量为整个NdFeB系烧结磁体等于或小于1000ppm，并且NdFeB系烧结磁体中晶界三相点富稀土相中富碳相的总体积占总体积的百分比稀土富集相的含量等于或小于50％。', 'EP2016162932', 1356537600, 'EP3059743B1', 1606233600, 1471968000, NULL, 1606233600, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 19, 2, 0, 0, 0, NULL, NULL, NULL, '2011286864 | PCT/JP2012/083786', 'JP | WO', 1324915200, 15, 54, NULL, NULL, 6, 0, 0, 0, 0, NULL, '876', NULL, NULL, NULL, 'EP1793392A2 | EP1923893A1 | US20070151632A1 | WO2006043348A1 | WO2010109760A1 | WO2011004894A1', NULL, NULL, 1, '\\20220510\\b735d6cfcd9c4d39a4219b952e536ebe.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, '有效:DE | 失效:RS,NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,SE,SI,MC,SK,SM,GB,IE,EE,CH,IS,IT,GR,AL,ES,AT,CZ,PL,RO,LI,NL | 未确认:HU,MK,MT,CY,TR', 39715, 39713, 39712, 58);
INSERT INTO `os_patent` VALUES (23259, 'GESINTERTER NEODYM-MAGNET', '烧结钕磁铁', 'DE602012030312T2', 'To provide a sintered neodymium magnet that is manufactured using a grain-boundary diffusion process, has high coercivity and squareness ratio, and exhibits little in the way of decreases in maximum energy product. This sintered neodymium magnet is obtained as follows: dysprosium and/or terbium (hereinafter \"dysprosium and/or terbium\" is referred to as \"RH\") attached to the surface of a substrate manufactured by aligning and sintering a powdered NdFeB alloy is diffused along grain boundaries inside said substrate by means of a grain-boundary diffusion process. This sintered neodymium magnet is characterized in that for at least 60% of grain-boundary triple junctions therein, the difference (Ct - Cw) between the RH concentration (Ct) (wt.%) at that grain-boundary triple junction and the RH concentration (Cw) (wt.%) along two-grain grain boundaries connected to that grain-boundary triple junction is at most 4 wt.%.', '为了提供使用晶界扩散工艺制造的烧结钕磁体，具有高矫顽力和矩形比，并且在最大能量积的减少方面几乎没有表现出来。该烧结钕磁铁如下获得：附着在通过对准和烧结粉末状NdFeB合金制造的基板表面上的镝和/或铽（下文中称为“镝和/或铽”称为“RH”）沿着它扩散。通过晶界扩散过程在所述基板内部的晶界。该烧结钕磁铁的特征在于，对于其中至少60％的晶界三结，该晶界三结处的RH浓度（Ct）（重量％）与RH之间的差值（Ct-Cw）沿着与该晶界三重结连接的两个晶粒边界的浓度（Cw）（重量％）为至多4重量％。', 'DE602012030312', 1356537600, 'DE602012030312T2', 1490112000, 1490112000, NULL, 1490112000, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 33, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '876', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39717, 39713, 39718, 58);
INSERT INTO `os_patent` VALUES (23260, 'HERSTELLUNGSVERFAHREN FÜR GESINTERTEN NEODYM-MAGNET', '烧结钕磁铁的生产方法', 'DE602012020321T2', 'Provided are: a sintered neodymium magnet whereby, when used as a substrate for a grain-boundary diffusion process, RH can easily diffuse across rare-earth-rich phases and the substrate itself has high coercivity, maximum energy product, and squareness ratio; and a method for manufacturing said sintered neodymium magnet. This sintered neodymium magnet is characterized in that: the mean diameter of main-phase particles in said sintered neodymium magnet is less than or equal to 4.5 µm; the overall carbon content of the sintered neodymium magnet is less than or equal to 1,000 ppm; and the total volume of carbon-rich phases in rare-earth-rich phases at grain-boundary triple junctions in the sintered neodymium magnet is less than or equal to 50% of the total volume of said rare-earth-rich phases.', '本发明提供一种烧结钕磁铁，其中，当用作晶界扩散工艺的基板时，RH可以容易地扩散到富稀土相中，并且基板本身具有高矫顽力，最大能量积和矩形比;以及制造所述烧结钕磁铁的方法。该烧结钕磁铁的特征在于：所述烧结钕磁铁中主相颗粒的平均直径小于或等于4.5μm;烧结钕磁铁的总碳含量小于或等于1,000ppm;在烧结钕磁体中晶界三结中的富稀土相中富碳相的总体积小于或等于所述富稀土相总体积的50％。', 'DE602012020321', 1356537600, 'DE602012020321T2', 1467734400, 1467734400, NULL, 1467734400, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 29, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '876', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 39719, 39713, 39720, 58);
INSERT INTO `os_patent` VALUES (23261, 'GESINTERTER NEODYM-MAGNET', '烧结钕磁铁', 'DE602012045185T2', 'Provided is a sintered neodymium magnet that is manufactured using a grain-boundary diffusion process, has high coercivity and squareness ratio, and exhibits little in the way of decreases in maximum energy product. This sintered neodymium magnet is obtained as follows: dysprosium and/or terbium (hereinafter &quot;dysprosium and/or terbium&quot; is referred to as &quot;RH&quot;) attached to the surface of a substrate manufactured by aligning and sintering a powdered NdFeB alloy is diffused along grain boundaries inside said substrate by means of a grain-boundary diffusion process. This sintered neodymium magnet is characterized in that the difference (Cs - Cd3) between the RH concentration (Cs) (wt.%) along grain boundaries at the surface to which RH was attached and the RH concentration (Cd3) (wt.%) along grain boundaries at a depth of 3 mm from said surface is no more than 20 wt.%.', '本发明提供一种烧结钕磁铁，其使用晶界扩散法制造，具有高矫顽力和矩形比，并且在最大能量积的降低方面几乎没有表现出来。该烧结钕磁体如下获得：附着于通过对准和烧结粉末状NdFeB合金制造的基板表面的镝和/或铽（下文中称为“镝和/或铽”称为“RH”）是通过晶界扩散过程沿所述基板内的晶界扩散。该烧结钕磁铁的特征在于，RH附着的表面的RH浓度（Cs）（重量％）与RH浓度（Cd3）（重量％）之差（Cs-Cd3）。沿着距离所述表面3mm深度的晶界，不超过20重量％。', 'DE602012045185', 1356537600, 'DE602012045185T2', 1523376000, 1523376000, NULL, 1523376000, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 32, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '876', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39721, 39713, 39722, 58);
INSERT INTO `os_patent` VALUES (23262, 'GESINTERTER NDFEB-SYSTEMMAGNET', '烧结NDFEB系统磁铁', 'DE602012073447T2', NULL, NULL, 'DE602012073447', 1356537600, 'DE602012073447T2', 1606233600, 1606233600, NULL, 1606233600, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 0, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '876', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\58718a774e8c45ccb0d2cff7ae75754a.png', NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 39723, 39713, 39724, 58);
INSERT INTO `os_patent` VALUES (23263, 'R-T-B系焼結磁石およびその製造方法', 'R-T-B系烧结磁铁及其制造方法', 'JP6221233B2', '(修正有)\n\n【課題】高温において、より高い固有保磁力HcJを発現することができるR-T-B系焼結磁石およびその製造方法を提供する。\n\n【解決手段】希土類元素と、Feと、Bとを含み、下記一般式で表される金属間化合物を主相とするR-T-B系焼結磁石であって、Ndと、DyおよびTbの少なくとも一方と、Prとを含み、前記金属間化合物の結晶粒の外殻部にDyおよびTbの少なくとも一方が濃化しており、R-T-B系焼結磁石の表層部の少なくとも一部分において、前記結晶粒の粒界多重点に存在する金属相が含有する希土類元素に占めるPrの質量比率が、75%以下で且つ前記金属相に隣接する前記結晶粒が含有する希土類元素に占めるPrの質量比率よりも10パーセント以上高くする。一般式:R2T14B(ここで、RはNdが質量比で50%以上である1種類以上の希土類元素であり、TはFeまたはFeとCo。)\n\n【選択図】図2', '(纠正)\n\n本发明的一个目的是一种高温,更高的固有矫顽力H.cJ可以提供基于R-T-B的烧结磁体和制造方法。\n\n溶液:含有稀土元素,Fe和B的RTB的烧结磁体,以及由以下通式表示的金属化合物是主阶段,Nd和Dy和Tb中的至少一种包括Pr,至少一个Dy和Tb浓缩在金属间化合物的外壳部分中,并且在RTB的烧结磁体的至少一部分的表面层部分中,晶粒的晶粒的晶粒边界占据的PR占据的质量比含有在聚焦处存在的金属相的稀土元素为与金属相相邻的稀土元素的75%或更低,10%或更多,或多于Pr的质量比。通式:R2T.14B(其中R是一种类型的稀土元素,其Nd以质量比为50%或更多,T是Fe或Fe和Co.)\n\n图2.', 'JP2012287210', 1356624000, 'JP6221233B2', 1509465600, 1404921600, NULL, 1507824000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 30, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 12, 0, 0, 0, 0, NULL, NULL, NULL, '井上 健一', NULL, 'JP2003031409A | JP2004304038A | JP2005011973A | JP2007287875A | JP2008263179A | JP2009054754A | JP2009124150A | JP2011199180A | JP2012015168A | WO2008032667A1 | WO2009016815A1 | WO2012161355A1', NULL, NULL, 1, '\\20220510\\87b232f8cd874845b82994ccbc9cabcd.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39725, 39727, 39726, 2);
INSERT INTO `os_patent` VALUES (23264, 'Method for producing R-T-B sintered magnet', 'R-T-B烧结磁铁的制造方法', 'US9478332B2', 'A method for producing a sintered R-T-B based magnet includes providing a sintered R-T-B based magnet body, of which the rare-earth-element mole fraction falls within the range of 31 mass % to 37 mass %; providing an RH diffusion source including a heavy rare-earth element RH (which is at least one of Dy and Tb) and 30 mass % to 80 mass % of Fe; loading the sintered magnet body and the RH diffusion source into a processing chamber so that the magnet body and the diffusion source are movable relative to each other and readily brought close to, or in contact with, each other; and performing an RH diffusion process by conducting a heat treatment on the sintered magnet body and the RH diffusion source at a process temperature of 700° C. to 1000° C. while moving the sintered magnet body and the RH diffusion source either continuously or discontinuously.', '一种烧结R-T-B系磁铁的制造方法，其特征在于，提供烧结R-T-B系磁铁体，其稀土元素摩尔分数为31质量％~37质量％。提供RH扩散源，其包含重稀土元素RH（Dy和Tb中的至少一种）和30质量％至80质量％的Fe;将烧结磁体和RH扩散源加载到处理室中，使得磁体和扩散源可相对于彼此移动并且容易彼此靠近或接触;通过在700℃至1000℃的处理温度下对烧结磁体和RH扩散源进行热处理，同时连续或不连续地移动烧结磁体和RH扩散源，进行RH扩散处理。', 'US14/372543', 1358352000, 'US9478332B2', 1477324800, 1419436800, NULL, 1477324800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 19, 3, 0, 0, 0, NULL, NULL, NULL, '2012008956', 'JP', 1326902400, 10, 10, NULL, NULL, 12, 2, 0, 0, 1, NULL, '869', NULL, 'YANG, JIE', 'SU, XIAOWEI', 'EP2667391A1 | JP2006108597A | JP2013237715A | US20080286595A1 | US20090297699A1 | US20100282371A1 | US20120112863A1 | US20130026870A1 | US20130087248A1 | WO2009107397A1 | WO2011007758A1 | WO2011122667A1', 'US10217562B2 | US20170323722A1', 'Official Communication issued in International Patent Application No. PCT/JP2013/050780, mailed on Apr. 16, 2013. cited by applicant.', 1, '\\20220510\\33fe2c14a9d74b62bde7b2db7bac2701.png', NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 39728, 39730, 39729, 11);
INSERT INTO `os_patent` VALUES (23265, 'R-T-B系焼結磁石の製造方法', 'R-T-B基烧结磁体的制备方法', 'JP5999106B2', '本願のR-T-B系焼結磁石の製造方法は、希土類元素の含有量によって定義されるR量が31質量%以上37質量%以下であるR-T-B系焼結磁石体を準備する工程と、重希土類元素RH(DyおよびTbの少なくとも一方)および30質量%以上80質量%以下のFeを含有するRH拡散源を準備する工程と、前記焼結磁石体と前記RH拡散源とを相対的に移動可能かつ近接または接触可能に処理室内に装入する工程と、前記焼結磁石体と前記RH拡散源とを前記処理室内にて連続的または断続的に移動させながら、前記焼結磁石体および前記RH拡散源を700℃以上1000℃以下の処理温度に加熱するRH拡散工程と、を包含する。', '本申请的基于RTB的烧结磁体的制备方法制备RTB的烧结磁体,其R体积由稀土元素的含量限定为31质量%以上,37质量%或更低,重稀土元素RH。准备制备含有30质量%或更高的RH扩散源和80重量%或更少的Fe(Dy和Tb中的至少一种)和烧结磁体和RH扩散源的步骤相对可移动和接近。或者,在处理室中加载或接触处理室的烧结磁体和RH扩散源以及在处理室中连续地移动或间歇地移动。然后进行RH扩散步骤RH扩散步骤加热至700℃或更高和1000℃或更低的处理温度。', 'JP2013554335', 1358352000, 'JP5999106B2', 1474992000, 1431273600, NULL, 1473350400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 24, 3, 0, 0, 0, NULL, NULL, NULL, '2012008956', 'JP', 1326902400, 10, 10, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '五貫 昭一', NULL, 'JP2009043776A | JP2012109369A | JP2012151286A | WO2007102391A1 | WO2009107397A1 | WO2011007758A1 | WO2012008416A1', NULL, NULL, 1, '\\20220510\\007dfc266ff04ed38118a83ca076cc86.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39728, 39730, 39729, 11);
INSERT INTO `os_patent` VALUES (23266, 'Method for producing r-t-b sintered magnet', 'r-t-b烧结磁铁的制造方法', 'EP2806438B1', 'A method for producing a sintered R-T-B based magnet according to the present application includes the steps of: providing a sintered R-T-B based magnet body, of which the R mole fraction that is defined by the content of a rare-earth element falls within the range of 31 mass% to 37 mass%; providing an RH diffusion source including a heavy rare-earth element RH (which is at least one of Dy and Tb) and 30 mass% to 80 mass% of Fe; loading the sintered magnet body and the RH diffusion source into a processing chamber so that the magnet body and the diffusion source are movable relative to each other and readily brought close to, or in contact with, each other; and performing an RH diffusion process by conducting a heat treatment on the sintered magnet body and the RH diffusion source at a process temperature of 700 °C to 1000 °C while moving the sintered magnet body and the RH diffusion source either continuously or discontinuously in the processing chamber.', '根据本申请的制造RTB基烧结磁体的方法包括以下步骤：提供RTB基烧结磁体，其中由稀土元素含量限定的R摩尔分数落在以下范围内： 31质量％至37质量％;提供RH扩散源，其包含重稀土元素RH（Dy和Tb中的至少一种）和30质量％至80质量％的Fe;将烧结磁体和RH扩散源加载到处理室中，使得磁体和扩散源可相对于彼此移动并且容易彼此靠近或接触;通过在700℃至1000℃的处理温度下对烧结磁体和RH扩散源进行热处理，同时连续或不连续地移动烧结磁体和RH扩散源，进行RH扩散处理。处理室。', 'EP2013738350', 1358352000, 'EP2806438B1', 1552406400, 1416931200, NULL, 1552406400, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 35, 3, 0, 0, 0, NULL, NULL, NULL, '2012008956', 'JP', 1326902400, 10, 10, NULL, NULL, 9, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, 'EP2667391A1 | JP2004296973A | JP2012109369A | US5383978A | WO2007102391A1 | WO2009107397A1 | WO2011007758A1 | WO2011022667A2 | WO2011122667A1', NULL, NULL, 1, '\\20220510\\893677b4ccd3433893e2f8f0d37b6782.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, '有效:DE | 失效:RS,NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,SE,SI,MC,SK,SM,GB,IE,EE,CH,IS,IT,GR,AL,ES,AT,CZ,PL,RO,LI,TR,NL | 未确认:HU,MK,MT,CY', 39728, 39730, 39729, 11);
INSERT INTO `os_patent` VALUES (23267, 'VERFAHREN ZUR HERSTELLUNG EINES GESINTERTEN R-T-B-MAGNETS', '制造烧结R-T-B磁体的方法', 'DE602013052277T2', 'This method for producing an R-T-B sintered magnet includes: a step of preparing an R-T-B sintered magnet body in which the quantity of R, which is defined by the rare metal content, is 31 mass% to 37 mass%, inclusive; a step of preparing an RH diffusion source containing a heavy rare earth element RH (at least one of Dy and Tb) and 30 mass% to 80 mass%, inclusive, of Fe; a step in which the sintered magnet body and the RH diffusion source are charged into a processing chamber in a manner permitting relative movement, and in close proximity to or contacting one another; and an RH diffusion step in which the sintered magnet body and the RH diffusion source are heated to a process temperature of 700&ordm;C to 1000 &ordm;C, inclusive while the sintered magnet body and the RH diffusion source are moved continuously or intermittently within the processing chamber.', '该制造R-T-B烧结磁体的方法包括：制备R-T-B烧结磁体的步骤，其中由稀有金属含量限定的R的量为31质量％至37质量％，包括端值;制备含有重稀土元素RH（Dy和Tb中的至少一种）和30质量％至80质量％（含）Fe的RH扩散源的步骤;其中烧结磁体和RH扩散源以允许相对运动的方式装入处理室中，并且彼此靠近或接触的步骤;以及RH扩散步骤，其中烧结磁体和RH扩散源被加热到700℃至100℃的工艺温度，同时烧结磁体和RH扩散源在该烧结磁体和RH扩散源内连续或间歇地移动。处理室。', 'DE602013052277', 1358352000, 'DE602013052277T2', 1552406400, 1552406400, NULL, 1552406400, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 41, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 39731, 39730, 39732, 11);
INSERT INTO `os_patent` VALUES (23268, '希土類元素の回収方法', '回收稀土元素的方法', 'JP6060704B2', '【課題】 低コストで簡易なリサイクルシステムとして実用化が可能な、少なくとも希土類元素と鉄族元素とホウ素を含む処理対象物から、希土類元素を鉄族元素とホウ素から分離して回収する方法を提供すること。\n\n【解決手段】 処理対象物に対して酸化処理を行った後、処理環境を炭素の存在下に移し、1550℃〜1800℃の温度で熱処理することで、希土類元素含量が70mass%以上で鉄族元素含量とホウ素含量がいずれも2.0mass%以下の回収物を得る工程を少なくとも含んでなることを特徴とする。\n\n【選択図】図1', '本发明的目的是提供一种将稀土元素与铁基元素和硼分离的方法,其中至少稀土元素和铁基元素和硼,具有至少稀土元素和铁基元素和硼。。\n\n溶液:在工艺靶标进行氧化处理后,将加工环境转移到1550℃至1800℃的温度下碳和热处理的存在,稀土元素含量为70质量%或更多。其特征在于,元素含量和硼含量至少是获得2.0质量%以下的回收率的步骤。\n\n图1', 'JP2013013379', 1359302400, 'JP6060704B2', 1484668800, 1407945600, NULL, 1482336000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '池ノ谷 秀行', NULL, 'JP2002060863A | JP2004068082A | JP2009249674A | JP2012041588A | WO2010098381A1', NULL, NULL, 1, '\\20220510\\82b4e2e120c34a8681d01acbf581192a.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39733, 39735, 39734, 2);
INSERT INTO `os_patent` VALUES (23269, 'R-T-B系焼結磁石の製造方法', 'R-T-B基烧结磁体的制备方法', 'JP6051892B2', '(修正有)\n\n【課題】高温において、より高い固有保磁力HcJを発現することができるR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】1)Ndを含む希土類元素と、FeとBを含み、R2T14Bで表される金属間化合物を主相とする焼結体を形成し、2)Dy、Tbの少なくとも一方を含む重希土類元素と該焼結体とを加熱し、該重希土類元素を拡散させて前記金属間化合物の結晶粒の外殻部に該重希土類元素を濃化させ、3)その後に、PrとAlを含む供給源と、該重希土類元素を拡散させた焼結体とを加熱し、該焼結体にPrとAlを拡散させ、該焼結体の表層部において、前記結晶粒の粒界多重点に存在する金属相の希土類元素に占めるPrの質量比率が75%以下であり且つ前記金属相に隣接する前記結晶粒の希土類元素に占めるPrの質量比率よりも20%ポイント以上高くし、さらに、該焼結体に含有されるAlの質量比率を0.01~0.05%ポイント増加させる。\n\n【選択図】図2', '(纠正)\n\n本发明的一个目的是一种高温,更高的固有矫顽力H.cJ提供了一种制造可以表达的R-T-B基烧结磁体的方法。\n\n1)包括一个稀土元素,包括ND和Fe和B.2T.14烧结体形成为由B,2)由B,2)重稀土元素表示的金属间化合物的主相,包括Dy,Tb和烧结体中的至少一种加热,并且重量稀土元素被扩散。重量稀土元素浓缩到金属间化合物的晶粒的壳体部分中,然后将含有Pr和Al的源极和通过扩散的烧结体的源极加热。然后,Pr和Al是在烧结体中扩散,并且在烧结体的表面层部分中,PR的质量比在晶粒体的晶粒边界复用的金属相的稀土元素的稀土元素为75%或更少。光圈和高于Pr的质量比与金属相相邻的晶粒的稀土元素,烧结体中含有的Al的质量比增加0.01〜0.05%。让它。\n\n图2.', 'JP2013017054', 1359561600, 'JP6051892B2', 1482768000, 1408550400, NULL, 1481212800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 24, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '井上 健一', NULL, 'JP2005011973A | JP2007287875A | JP2008263179A | JP2009054754A | JP2014130888A | WO2006112403A1 | WO2012043692A1', NULL, NULL, 1, '\\20220510\\068034f0be5f4bd380f2ecc916187c70.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 39736, 39738, 39737, 2);
INSERT INTO `os_patent` VALUES (23270, 'R-T-B系焼結磁石およびその製造方法', 'R-T-B系烧结磁铁及其制造方法', 'JP6221246B2', '(修正有)\n\n【課題】DyおよびTbを使用しなくても高温で高いHcJを発現することができるR-T-B系焼結磁石およびその製造方法を提供する。\n\n【解決手段】NdおよびPrを含む希土類元素と、Feと、Bとを含み、一般式R2T14B(ここで、RはNdが質量比で50%以上である1種類以上の希土類元素であり、TはFeまたはFeとCo。)で表される金属間化合物を主相とするR-T-B系焼結磁石であって、前記金属間化合物の結晶粒を10個〜100個含む断面における分光法による濃度測定において、Prの濃度が前記R-T-B系焼結磁石の中央部よりも高くなっている表層部を有し、該表層部の少なくとも一部分において、前記結晶粒の粒界多重点に存在する金属相が含有する希土類元素に占めるPrの質量比率が75%以下であり、かつ前記金属相に隣接する前記結晶粒が含有する希土類元素に占めるPrの質量比率よりも20パーセントポイント以上高くする。\n\n【選択図】図1', '摘要：要解决的问题：提供一种基于R-T-B的歌手磁体，其能够在不使用Dy和Tb的情况下在高温下表现出高HcJ并因此提供制造方法。解决方案：基于RTB的烧结磁体含有稀土元素，如Nd和PR，Fe和B，并由金属间化合物作为主相形成，金属间化合物由通式R2T14B表示（这里，R是质量比为50％以上的Nd的一种以上的稀土元素，T为Fe或/和Co）。在使用包含10至100个金属间化合物晶粒的横截面中的光谱测定法的密度测量中，基于RTB的歌手磁体具有表面层部分，其中Pr的密度高于中心部分的密度。基于RTB的烧结磁铁。在表面层部分的至少一部分中，存在于晶粒的晶界多点处的金属相所含的稀土元素的Pr与质量比例为75％以下，比其高20％。 Pr与由与金属相相邻的晶粒所含的稀土元素的质量比例。', 'JP2013016992', 1359561600, 'JP6221246B2', 1509465600, 1403107200, NULL, 1507824000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 28, 2, 0, 0, 0, NULL, NULL, NULL, '2012240708', 'JP', 1351612800, 2, 2, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '井上 健一', NULL, 'JP2003031409A | JP2004304038A | JP2005011973A | JP2007287875A | JP2008263179A | JP2011199180A | JP2012015168A', NULL, NULL, 1, '\\20220510\\91c6263cc45c47e28cbd8f8960a3b346.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, NULL, 39739, 39741, 39740, 2);
INSERT INTO `os_patent` VALUES (23271, 'R-T-B系焼結磁石の製造方法', 'R-T-B基烧结磁体的制备方法', 'JP6051922B2', '【課題】高温において、残留磁束密度Brの低下を抑制し、高い固有保磁力HcJを有するR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】1)ネオジム(Nd)を含む希土類元素と、鉄(Fe)と、ホウ素(B)とを含み、下記一般式で表される金属間化合物を主相とする焼結体を形成する工程と、2)ジスプロシウム(Dy)およびテルビウム(Tb)の少なくとも一方を含む重希土類元素供給源と、前記焼結体とを容器内に配置し、該重希土類元素供給源と該焼結体とを第1の拡散温度で加熱し、該重希土類元素供給源から該焼結体にジスプロシウム(Dy)およびテルビウム(Tb)の少なくとも一方を拡散させる工程と、3)前記工程2)の後に、アルミニウム(Al)を含むアルミニウム供給源と、前記重希土類元素供給源から前記焼結体にジスプロシウム(Dy)およびテルビウム(Tb)の少なくとも一方を拡散させた焼結体とを容器内に配置し、該アルミニウム供給源と該焼結体とを前記第1の拡散温度より低くかつ600℃~760℃の範囲の第2の拡散温度で加熱し、該アルミニウム供給源から該焼結体にアルミニウム(Al)を拡散させる工程と、を含むことを特徴とするR-T-B系焼結磁石の製造方法\n\n一般式:  R2T14B\n\n(ここで、Rはネオジム(Nd)が質量比で50%以上である1種類以上の希土類元素であり、Tは鉄(Fe)または鉄(Fe)とコバルト(Co)。)\n\n【選択図】なし', '要解决的问题:高温,残留磁通密度Br抑制高端磁力H的下降cJ提供了一种制造基于R-T-B基烧结磁体的方法。\n\n1)烧结体,其包含稀土元素,包括钕(Nd),铁(Fe)和硼(B),并形成烧结体,该烧结体是由以下通式表示的金属间化合物的主阶段。重稀有包括2)镝(Dy)和铽(Tb)中的至少一个的地球元素源,以及上述颗粒置于容器中,重量稀土元素源和扩散至少一种镝(在步骤2)之后,Dy)和铽(Tb)进入烧结体和3),其中烧结体,其中含有铝(Al)中的至少一种含铝(Al)散开将重稀土元素源进入烧结体中的烧结体,铝源和烧结体低于第一扩散温度并在600℃至760℃的第二扩散温度下加热。和铝(Al)来自铝源(A1)的制造RTB基烧结磁体的方法,其特征在于弥漫性地扩散。\n\n通式:R2T.14B.\n\n(这里,R是一种类型的稀土元素,其钕(Nd)为质量比,T是铁(Fe)或铁(Fe)和钴(Co)。)。\n\n[选择图]无', 'JP2013031062', 1361289600, 'JP6051922B2', 1482768000, 1409760000, NULL, 1481212800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 20, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 8, 0, 0, 0, 0, NULL, NULL, NULL, '井上 健一', NULL, 'JP2008263179A | JP2009054754A | JP2009224413A | JP2011223007A | JP2012174920A | WO2006112403A1 | WO2012036294A1 | WO2012043692A1', NULL, NULL, 1, '\\20220510\\93b05f6628ca43539996f5e20a697908.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39742, 39744, 39743, 2);
INSERT INTO `os_patent` VALUES (23272, 'NdFeB焼結磁石の製造方法', 'NdFeB烧结磁体的制造方法', 'JP5643355B2', '【課題】保磁力及び磁化曲線の角型性が高いNdFeB焼結磁石を製造する方法を提供する。\n\n【解決手段】本発明に係るNdFeB焼結磁石の製造方法は、NdFeB焼結磁石基材の表面にDy及び/又はTbを含む層を形成した後に前記磁石基材の焼結温度以下の温度に加熱することにより、前記層中のDy及び/又はTbを前記磁石基材の結晶粒界を通じて前記磁石基材内部に拡散させる粒界拡散処理を行う方法において前記磁石基材中に含まれる金属状態の希土類量が12.9原子%以上であり、前記層が50質量%以上のDyのフッ化物及び/又はTbのフッ化物を含有する、ことを特徴とする。これにより、従来は特性の向上が困難であった3〜6mmという厚い厚みを持つ場合においても、1.4mA/m以上という高い保磁力を有し、且つ磁化曲線の角型性が高いNdFeB焼結磁石を製造することができる。\n\n【選択図】なし', '摘要：要解决的问题：为磁化曲线提供具有高矫顽力和高方形性能的NdFeB烧结磁体的制造方法。解决方案：NdFeB烧结磁体的制造方法包括晶界扩散处理。在晶界扩散处理中，通过在磁体表面上形成层，在包含Dy和/或Tb的层中的Dy和/或Tb通过磁体基底的晶粒边界扩散到磁体基底的内部。 NdFeB烧结磁体基底，并加热至不高于磁体基底的烧结温度的温度;包含在磁铁基体中的金属状态的稀土量不小于12.9原子％;该层包含Dy的氟化物和/或Tb的氟化物不低于50质量％。即使磁体具有3-6mm的厚度，这在传统情况下难以改善特性，具有不低于1.4mA / m的高矫顽力的NdFeB烧结磁体和磁化曲线的高方形性能可以制造。', 'JP2013031636', 1361376000, 'JP5643355B2', 1418745600, 1375891200, NULL, 1415289600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 6, 0, 0, 0, 5, NULL, '863', NULL, '井上 健一', NULL, 'JP1987074048A | JP1989117303A | JP2006303436A | JP2007287874A | JP2007287875A | WO2006043348A1', NULL, 'K. T. Park他、「Nd-Fe-B薄膜焼結磁石の保磁力への金属被覆と加熱の効果」、第16回希土類磁石とその応用に関する国際会議会議録、社団法人日本金属学会発表、2000年、第257-264頁(K. T. Park et al., \"Effect of Metal-Coating and Consecutive Heat Treatment on Coercivity of Thin Nd-Fe-B Sintered Magnets\", Proceeding of the Sixteenth International Workshop on Rare-Earth Magnets and their Appiications (2000), pp. 257-264.) | 廣田晃一  他、「粒界拡散法によるNd-Fe-B系焼結磁石の高保磁力化」、粉体粉末冶金協会平成17年春季大会講演概要集、粉体粉末冶金協会発行、第143頁 | 町田憲一  他、「Nd-Fe-B系焼結磁石の粒界改質と磁気特性」、粉体粉末冶金協会平成16年春季大会講演概要集、粉体粉末冶金協会発行、1-47A | 町田憲一  他、「粒界改質型Nd-Fe-B系焼結磁石の磁気特性」、粉体粉末冶金協会平成17年春季大会講演概要集、粉体粉末冶金協会発行、第144頁 | 石垣尚幸  他、「ネオジム系微小焼結磁石の表面改質と特性向上」、NEOMAX技報、株式会社NEOMAX発行、2005年、第15巻、第15-19頁', 1, '\\20220510\\97fd355d4df144dbbc5ebe1c20f347fc.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39745, 39324, 39746, 5);
INSERT INTO `os_patent` VALUES (23273, 'R-T-B系永久磁石の製造方法', 'R-T-B系永久磁石の制造方法', 'JP6198103B2', '【課題】本発明の課題は、Dyを用いることなく十分な保磁力と角型性を有するR-T-B系永久磁石を提供することにある。\n\n【解決手段】  本発明のR-T-B系永久磁石の製造方法は、50%体積中心粒径が1μm以上10μm未満であり、R2T14B相を含むR-T-B系合金粉末、または、前記R-T-B系合金粉末に対し粒度150μm未満のR’金属またはR’-M系合金の粉末を混合した混合粉末を用意する工程と、前記R-T-B系合金粉末または混合粉末を成形して圧粉体を作製する工程と、前記圧粉体に対しHDDR処理を行う工程と、R2T14B相結晶粒の界面近傍に粒界相を形成させる工程と、熱間圧縮成型によって前記多孔質磁石の密度を真密度の96%以上まで高める緻密化工程を行い、その後、800℃以上900℃以下の温度で熱処理を施す粒界相均質化工程を行う。\n\n【選択図】図8', '本发明的目的是提供一种基于R-B基的永磁体,其具有足够的矫顽力和方形而不使用Dy。\n\n制造根据本发明的R-T-B永磁体的方法是50%体积的中央粒径小于1μm且小于10μm。2T.14制备混合粉末,其中含有粒径为150μm的R\'金属或R\'-M合金的粉末与含有B相的RTB的合金粉末或R\'-M基合金的粉末混合粒径和RTB基合金粉末或通过形成混合粉末并在粉末粉末进行HDDR处理来形成混合粉末的过程;2T.14在B相晶粒界面附近形成晶界的步骤和将多孔磁体的密度增加到热压缩成型的96%以上,然后800℃或更高900℃。在以下温度下进行晶界均化步骤以热处理。\n\n图8.', 'JP2013032764', 1361462400, 'JP6198103B2', 1505836800, 1410105600, NULL, 1504195200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 24, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 12, 0, 0, 0, 2, NULL, NULL, NULL, '井上 健一', NULL, 'JP1999307379A | JP2000021614A | JP2003243211A | JP2008127648A | JP2010251740A | JP2011049440A | JP2012049492A | JP2012099852A | JP2012195392A | JP2012216804A | JP2012216807A | WO2007135981A1', NULL, '小林久理眞,高野隆之,佐川眞人, 電気学会マグネティックス研究会資料,MAG—05—118(2005) | 広沢哲,西内武司,大久保忠勝,Li Wanfang, 宝野和博,山崎二郎,竹澤昌晃,隅山兼冶,山室佐益,日本金属学会誌 vol.73 p.135(2009)', 1, '\\20220510\\02cd55f9776c4ac1b5d48566b28316f0.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 39747, 39749, 39748, 2);
INSERT INTO `os_patent` VALUES (23274, 'NdFeB sintered magnet and method for producing the same', '钕铁硼烧结磁铁及其制造方法', 'US10854380B2', 'A method for producing an NdFeB sintered includes forming a layer containing Dy and/or Tb on the surface of an NdFeB sintered magnet base material and then performing a grain boundary diffusion process for diffusing Dy and/or Tb from the aforementioned layer through the crystal grain boundaries of the magnet base material into the magnet base material by heating the magnet base material to a temperature equal to or lower than the sintering temperature thereof. In this method: a) the content of a rare earth in a metallic state in the magnet base material is equal to or higher than 12.7 at %; b) the aforementioned layer is a powder layer formed by depositing a powder; and c) the powder layer contains Dy and/or Tb in a metallic state by an amount equal to or higher than 50 mass %.', 'NdFeB烧结体的制造方法包括在NdFeB烧结磁体基材的表面上形成含有Dy和/或Tb的层,然后进行晶界扩散处理,以使Dy和/或Tb从上述层通过晶粒扩散。通过将磁体基础材料加热至等于或低于其烧结温度的温度,将磁体基础材料的边界限定到磁体基础材料中。在该方法中:a)磁体基材中的金属状态的稀土元素的含量为12.7at%以上。b)上述层是通过沉积粉末形成的粉末层;c)粉末层中的金属状态的Dy和/或Tb的含量为50质量%以上。', 'US13/778324', 1361894400, 'US10854380B2', 1606752000, 1372867200, NULL, 1606752000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 17, 2, 0, 0, 0, NULL, NULL, NULL, '2008004845 | PCT/JP2009/000068', 'JP | WO', 1199980800, 15, 15, NULL, NULL, 57, 0, 0, 0, 39, NULL, '880', NULL, 'SU, XIAOWEI', NULL, 'CN101006534A | CN101076870A | CN101911227A | CN1265947A | CN1688000A | CN1802221A | CN1812008A | CN1938792A | EP1643513A1 | EP1705668A2 | EP1843360A1 | EP1981043A1 | EP2144257A1 | JP1987074048A | JP1987192566A | JP1989117303A | JP1994096928A | JP1997232173A | JP2000234151A | JP2004359873A | JP2005320628A | JP2006303435A | JP2007053351A | JP2007258455A | JP2007287874A | JP2007287875A | JP2007329250A | JP2008147634A | US20040050454A1 | US20060213583A1 | US20060278517A1 | US20070017601A1 | US20070102069A1 | US20070240789A1 | US20080006345A1 | US20080223489A1 | US20080257716A1 | US20090072938A1 | US20100119703A1 | US20100129538A1 | US20100164663A1 | US20100230013A1 | US20100282371A1 | US20120176211A1 | US7244318B2 | US7594972B2 | US7824506B2 | US9589714B2 | WO2006004848A1 | WO2006043348A1 | WO2006064848A1 | WO2006100968A1 | WO2007088718A1 | WO2008032426A1 | WO2008139690A1 | WO2009075351A1', NULL, 'Apr. 23, 2013 Notification of Reasons for Rejection issued in Japanese Application No. 2008-004845 with English-language translation. | Aug. 28, 2018 Office Action issued in Chinese Patent Application No. 201310571585.8. cited by applicant | Chinese Office Action dated Jan. 4, 2012 issued in Chinese Patent Application No. 200980101615.0 (with English-language translation). cited by applicant | Feb. 11, 2015 Office Action issued in U.S. Appl. No. 13/383,034. cited by applicant | Imanari et al, \"Study of Microstructure of Dy-Modified Neodymium Magnet,\" Collected Abstracts of the 2009 Spring Meeting of the Japan Institute of Metals, 2009, pp. 115 (with translation). cited by applicant | International Search Report and International Preliminary Report on Patentability dated Sep. 28, 2010 issued in International Patent Application No. PCT/JP2010/061712. cited by applicant | Ishigaki, N. et al., \"Surface Improvements on Magnetic Properties for Small-Sized Nd--Fe--B Sintered Magnets,\" Neomax Technical Report, 2005, pp. 15-19, vol. 15, published by Kabushiki Kaisha Neomax, Japan. cited by applicant | Jan. 15, 2019 Office Action issued in U.S. Appl. No. 15/383,509. cited by applicant | Jan. 27, 2014 First Office Action issued in Chinese Application No. 201080030500.X with English-language translation. | Jan. 29, 2018 Office Action issued in European Application No. 10 797 205.1. cited by applicant | Jan. 4, 2017 Office Action issued in Chinese Application No. 201310571585.8. | Jan. 5, 2017 Summons to Attend Oral Proceedings issued in European Application No. 09700197.8. cited by applicant | Jul. 10, 2019 Office Action Issued for U.S. Appl. No. 15/383,509. cited by applicant. | Jul. 28, 2015 Office Action issued in Chinese Application No. 201310571585.8. | Jul. 7, 2014 Extended European Search Report issued in European Patent Application No. 10797205.1. cited by applicant | Machida, K. et al., \"Grain Boundary Modification and Magnetic Characteristics of Nd--Fe--B Sintered Magnet,\" Abstracts of Spring Meeting of Japan Society of Powder and Powder Metallurgy, 2004, p. 1-47A, published by the Japan Society of Powder and Powder Metallurgy, Japan. cited by applicant | Machine translation of JP06-096928A, Apr. 1994. (Year: 1994). cited by examiner | Machine translation of JP09-232173A, Sep. 1997. cited by examiner | Mar. 11, 2016 Office Action issued in Chinese Application No. 201310571585.8. cited by applicant | Mar. 15, 2016 Office Action issued in Japanese Application No. 2015-010195. cited by applicant | Mar. 25, 2014 Notification of Reasons for Rejection issued in Japanese Application No. 2011-521979 with English-language translation. cited by applicant | Mar. 28, 2017 Office Action issued in Chinese Patent Application No. 201310261730.2. cited by applicant | Mar. 31, 2015 Office Action issued in Chinese Application No. 201310261730.2. | May 11, 2016 Office Action issued in European Application No. 09700197.8. | May 14, 2018 Office Action issued in Chinese Application No. 201610370890.4. | May 16, 2016 US Office Action Issued in U.S. Appl. No. 13/383,034. cited by applicant | May 17, 2017 Office Action issued in European Patent Application No. 09700197.8. cited by applicant | May 31, 2017 Office Action issued in Indian Patent Application No. 5479/DELNP/2010. cited by applicant | Nov. 18, 2015 Office Action issued in U.S. Appl. No. 13/383,034. | Oct. 10, 2017 Office Action in Chinese Application No. 201310571585.8. cited by applicant | Oct. 31, 2016 Office Action issued in Chinese Patent Application No. 201310261730.2. | Park, K.T., \"Effect of Metal-Coating and Consecutive Heat Treatment on Coercivity of Thin Nd--Fe--B Sintered Magnets,\" Proceedings of the Sixteenth International Workshop on Rare-Earth Magnets and Their Applications, 2000, pp. 257-264, published by The Japan Institute of Metals, Japan. cited by applicant | Sep. 18, 2012 Japanese Office Action issued in Japanese Patent Application No. 2008-004845 (with English-language translation). cited by applicant | Sep. 18, 2014 Office Action issued in U.S. Appl. No. 13/383,034. | Sep. 19, 2014 Office Action issued in Chinese Application No. 201080030500.X (with English translation). | Sep. 29, 2015 Office Action issued in Chinese Application No. 201080030500.X. cited by applicant | Sep. 5, 2017 Office Action issued in Chinese Application No. 201610370890.4. cited by applicant | September 28, 2016 Office Action issued in Chinese Patent Application 201310571585.8. cited by applicant | Written Opinion of the International Searching Authority issued in International Application No. PCT/JP2009/000068 dated Apr. 14, 2009 (with English-language translation). cited by applicant', 1, '\\20220510\\41aefde2ed3a4da8bfbf28b4cef53bbe.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39318, 39320, 39319, 16);
INSERT INTO `os_patent` VALUES (23275, 'R-T-B系焼結磁石の製造方法', 'R-T-B基烧结磁体的制备方法', 'JP6248925B2', 'RH拡散源とR-T-B系焼結磁石体とを開口部を有する平板状の保持部材を介して交互に配置し、積層体を構成する工程と、前記積層体を処理容器内に配置する工程と、前記処理容器内の圧力を2.0Pa以上50Pa以下、温度を800℃以上950℃以下でRH供給拡散処理を行う工程(A)と、前記処理容器内の圧力を150Pa以上2kPa以下、温度を800℃以上950℃以下でRH拡散処理を行う工程(B)とを含み、前記工程(A)と前記工程(B)を交互に2回以上繰り返す工程とを含む。', '交替地通过具有开口的平板状保持构件交替地布置RH扩散源和基于RTB的烧结磁体的步骤,并将层压板布置在加工容器中的压力,在加工容器中布置层压材料的步骤容器是2.0Pa或更大,50pa或更小,加工容器中的压力为800℃以上,而950℃或更低,加工容器中的压力为150 pa或更高,2kpa或2kpa较少,温度为800℃。在950℃或更小的步骤(b),并且包括步骤(a)和步骤(b)交替地重复两次或更多次。', 'JP2014507582', 1361980800, 'JP6248925B2', 1513699200, 1449676800, NULL, 1512057600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, '2012079305', 'JP', 1333036800, 6, 6, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '久保田 昌晴', NULL, 'JP2007329250A | JP2009200180A | JP2011233554A | WO2007102391A1 | WO2011004867A1 | WO2012008426A1 | WO2012043061A1', NULL, NULL, 1, '\\20220510\\267e479049374c7da552cd45e689edfe.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39750, 39752, 39751, 6);
INSERT INTO `os_patent` VALUES (23276, 'NdFeB系焼結磁石', 'NdFeB系焼结磁石', 'JP6305916B2', '本発明は、高温環境下での不可逆減磁や発熱が生じにくいNdFeB系焼結磁石を提供することを目的とする。本発明に係るNdFeB系焼結磁石は、NdFeB系合金の粉末を磁界中で配向し、焼結することにより製造した基材の表面に付着させたDy及び/又はTbを、粒界拡散処理によって該基材内部の粒界に拡散させたNdFeB系焼結磁石であって、角型比が95%以上であることを特徴とする。このようなNdFeB系焼結磁石は、希土類リッチ相のラメラが所定の間隔でほぼ均等に分散したNdFeB系合金を出発合金として用いると共に、該合金に水素を吸蔵させた後、焼結工程に至るまで、吸蔵させた水素を脱離させるための加熱を行わないまま、NdFeB系焼結磁石の基材を作製し、それを粒界拡散処理することにより製造することができる。', '本发明的目的是提供一种基于NDFEB的烧结磁体,其不可逆的退磁或发热在高温环境中不太可能发生。根据本发明的基于NDFEB的烧结磁体是通过用Dy和/或Tb连接到基板表面的晶界扩散处理,通过在磁场和烧结中定向NdFeB基合金的粉末而产生的。它是基于NDFEB的烧结磁体扩散到基材内的晶界,方形型比为95%以上。这种基于NDFEB的烧结磁体使用NdFeB基合金,其中稀土富相的薄片基本上以预定的间隔均匀地分散为起始合金,并且在合金中吸收氢气后,它导致烧结过程。它导致烧结过程。至多,可以通过晶界扩散处理产生并制造基于NDFEB的烧结磁体的基板,而不加热以解吸储存的氢。', 'JP2014507915', 1364227200, 'JP6305916B2', 1522771200, 1450022400, NULL, 1521129600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 4, 0, 0, 0, NULL, NULL, NULL, '2012082357', 'JP', 1333036800, 10, 10, NULL, NULL, 9, 0, 0, 0, 0, NULL, '863', NULL, '馬場 慎', NULL, 'JP2002246253A | JP2005015886A | JP2005159053A | JP2005320628A | JP2009135393A | JP2010129665A | JP2012060139A | WO2009057592A1 | WO2011004894A1', NULL, NULL, 1, '\\20220510\\801048966ea14b96bf5ff54c160c6ceb.png', NULL, NULL, 1, NULL, NULL, 13, NULL, NULL, NULL, 39753, 39755, 39754, 10);
INSERT INTO `os_patent` VALUES (23277, '重希土類元素の回収方法', '回收重稀土元素的方法', 'JP5983526B2', '【課題】安定的に重希土類元素を回収できる重希土類元素の回収方法を提供する。\n\n【解決手段】重希土類元素と軽希土類元素とを含む希土類元素含有溶液に、アルカリ金属硫酸塩又はアルカリ金属硫酸塩を含む溶液を添加することで希土類元素の硫酸複塩沈殿を生成させて重希土類元素を回収する方法において、希土類元素含有溶液中に種晶として希土類元素の硫酸複塩沈殿を加え、その種晶中の軽希土類元素の濃度及び希土類元素含有溶液中の軽希土類元素の濃度の合計が28g/L以上となるように管理して行う。\n\n【選択図】  図1', '本发明的目的是提供一种用于回收重稀土元素的方法,其可以稳定地恢复重稀土元素。\n\n溶液:包含重稀土元素和光稀土元素的含稀土元素的溶液通过加入含有碱金属硫酸盐或碱金属硫酸盐的溶液加入稀土元素的溶液以形成重稀土。在回收元素的方法中,在稀土元素的溶液中作为种子晶体加入稀土元素的硫酸聚合物,以及种子晶体中的迷你稀土元素的浓度和浓度的浓度稀土元素含量溶液中的成种稀土元素均为28克/升或更多。\n\n图1', 'JP2013098486', 1367942400, 'JP5983526B2', 1472572800, 1416412800, NULL, 1470931200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 10, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '池ノ谷 秀行', NULL, 'JP1988206313A | JP1995026336A | JP1997217133A | JP2012025992A | JP2012229483A', NULL, NULL, 1, '\\20220510\\3e4e26dd49e743139d4c0a4aba2c2d3d.png', NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 39756, 39758, 39757, 2);
INSERT INTO `os_patent` VALUES (23278, '希土類系焼結磁石の製造方法', '稀土类烧结磁铁的制造方法', 'JP5999181B2', '希土類系焼結磁石の製造方法において、スラリーが、外周面及び内周面のうち一方の面の摺動方向に垂直な断面における頂上部の一箇所から他方の面の前記摺動方向に垂直な断面における頂上部の一箇所に向かうように、前記スラリーをキャビティ内へ注入することを特徴とする。', '在制造稀土基烧结磁体的方法中,浆料垂直于顶部的顶部的一个点的滑动方向,垂直于外周表面和内部的一个的滑动方向圆周表面。其特征在于将浆料注入腔中以面对横截面顶部的一个地方。', 'JP2014522634', 1372089600, 'JP5999181B2', 1474992000, 1464796800, NULL, 1473350400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 19, 3, 0, 0, 0, NULL, NULL, NULL, '2012146708', 'JP', 1340899200, 9, 9, NULL, NULL, 8, 0, 0, 0, 0, NULL, NULL, NULL, '池田 安希子', NULL, 'JP1993129127A | JP1993135937A | JP1995057914A | JP1999214216A | JP2002134314A | JP2007203577A | JP2008163466A | JP2009111169A', NULL, NULL, 1, '\\20220510\\29dda821745d4484b9e79a4e30b16f11.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39759, 39761, 39760, 10);
INSERT INTO `os_patent` VALUES (23279, '希土類系焼結磁石の製造方法', '稀土类烧结磁铁的制造方法', 'JP6060971B2', '1)希土類元素と鉄とホウ素とを含む合金粉末と、分散媒と、を所定の比率で含むスラリーを準備する工程と、2)金型と、少なくとも一方が移動して該金型内で互いに接近離間可能でかつ、少なくとも一方が前記スラリーの前記分散媒を排出するための排出孔を有する上パンチと下パンチと、に取り囲まれたキャビティを準備する工程と、3)前記キャビティの内部に、前記上パンチと前記下パンチの少なくとも一方が移動可能な方向と平行な方向に1.5T以上の磁界を印加し、前記上パンチと前記下パンチとを静止させた状態で、前記スラリーを20〜600cm3/秒の流量で供給し、該キャビティを前記スラリーで満たす工程と、4)前記磁界を印加したままで、前記上パンチと前記下パンチとを接近させる磁界中プレス成形により、前記合金粉末の成形体を得る工程と、5)前記成形体を焼結する工程と、を含むことを特徴とする希土類系焼結磁石の製造方法である。', '1)制备包括稀土元素和铁和硼的浆料,制备含有分散介质的浆料的方法,以及模具,模具,至少一个在模具中彼此移动。准备腔包围通过上冲头和下冲头与排气孔用于排出浆料的分散介质,并且在腔内的至少一个和3),施加1.5t或更大的磁场在平行于其at的方向上施加上冲头和下冲头中的至少一个平行于可移动方向,并且在上冲头和下冲头静止的状态下,浆料在20至600cm处。3通过压制成形在磁场中通过压制成型成型,其中浆料和腔体进入上冲头和下冲头,以/秒的流速供应。获得身体的过程; 5)是一个制造稀土烧结磁体的方法。', 'JP2014522632', 1372089600, 'JP6060971B2', 1484668800, 1464796800, NULL, 1482336000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 21, 3, 0, 0, 0, NULL, NULL, NULL, '2012146704', 'JP', 1340899200, 10, 10, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '池田 安希子', NULL, 'JP1995057914A | JP2001058294A | JP2001093765A | JP2009016849A | JP2010215992A | JP2011216726A', NULL, NULL, 1, '\\20220510\\270001b62177480886080c48de317e17.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39762, 39764, 39763, 11);
INSERT INTO `os_patent` VALUES (23280, 'Method for producing rare earth sintered magnet', '一种稀土烧结磁体的生产方法', 'US10020113B2', 'The present invention provides a method for producing a long and large-sized rare earth sintered magnet having a large size in a magnetic field application direction in which a single magnet body in each portion has uniform and high magnetic characteristics. Disclosed is a method for producing a rare earth sintered magnet, including particular steps of: 1) preparing a slurry; 2) preparing a cavity that is enclosed with a mold, an upper punch and a lower punch; 3) applying a magnetic field of 1.5 T or more in the cavity, and supplying the slurry at a flow rate of 20 to 600 cm3/second, to fill the cavity with the slurry; 4) producing a molded body of the alloy powder by press molding in the magnetic field; and 5) sintering the molded body.', '本发明提供一种在磁场施加方向上具有大尺寸的长而大尺寸的稀土烧结磁体的制造方法，其中每个部分中的单个磁体具有均匀和高磁特性。本发明公开了一种稀土烧结磁体的制造方法，包括以下具体步骤：1）制备浆料; 2）准备用模具，上冲头和下冲头封闭的空腔; 3）在空腔中施加1.5T或更大的磁场，并以20至600cm  3  /秒的流速供应浆料，以用浆料填充空腔; 4）在磁场中通过模压成型制造合金粉末的成型体; 5）烧结成型体。', 'US14/411266', 1372089600, 'US10020113B2', 1531152000, 1437580800, NULL, 1531152000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 22, 3, 0, 0, 0, NULL, NULL, NULL, '2012146704', 'JP', 1340899200, 10, 10, NULL, NULL, 15, 0, 0, 0, 2, NULL, '870', NULL, 'KESSLER, CHRISTOPHER', NULL, 'JP1995057914A | JP1998241981A | JP2000353633A | JP2001058294A | JP2001093765A | JP2004281873A | JP2008218502A | JP2008243982A | JP2009016849A | JP2010215992A | JP2011216726A | US20020192484A1 | US20070176329A1 | US5489343A | US6413457B1', NULL, 'Communication dated Mar. 8, 2016 from the European Patent Office in counterpart application No. 13810728.9. cited by applicant | International Preliminary Report on Patentability, dated Jan. 8, 2015, issued by the International Searching Authority in counterpart Application No. PCT/JP2013/067335. cited by applicant.', 1, '\\20220510\\6a2852ff6c314c8ca39e1949d17adc4a.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39762, 39764, 39763, 11);
INSERT INTO `os_patent` VALUES (23281, 'Method for producing rare earth sintered magnets', '一种稀土烧结磁体的生产方法', 'EP2869319B1', 'The present invention provides a method for producing a long and large-sized rare earth sintered magnet having a large size in a magnetic field application direction in which a single magnet body in each portion has uniform and high magnetic characteristics. Disclosed is a method for producing a rare earth sintered magnet, including the steps of: 1) preparing a slurry that contains an alloy powder containing a rare earth element, iron, and boron, and a dispersion medium at a predetermined ratio; 2) preparing a cavity that is enclosed with a mold, and an upper punch and a lower punch, at least one of which is movable toward and away from the other one in the mold, and also includes an outlet for discharging the dispersion medium of the slurry; 3) applying a magnetic field of 1.5 T or more in the cavity in the direction parallel to the direction in which at least one of the upper punch and the lower punch is movable, and supplying the slurry at a flow rate of 20 to 600 cm 3 /second in a state where the upper punch and the lower punch remain stationary, to fill the cavity with the slurry; 4) producing a molded body of the alloy powder by press molding in the magnetic field in which the upper punch and the lower punch come closer to each other while applying the magnetic field; and 5) sintering the molded body.', '本发明提供一种在磁场施加方向上具有大尺寸的长而大尺寸的稀土烧结磁体的制造方法，其中每个部分中的单个磁体具有均匀和高磁特性。本发明公开了一种稀土烧结磁体的制造方法，包括以下步骤：1）以预定比例制备含有含有稀土元素，铁和硼的合金粉末和分散介质的浆料; 2）准备用模具封闭的空腔，以及上冲头和下冲头，其中至少一个可在模具中朝向和远离另一个移动，并且还包括用于排出分散介质的出口。浆液; 3）在平行于上冲头和下冲头中的至少一个可移动的方向的方向上在腔中施加1.5T或更大的磁场，并以20至600cm的流速供应浆料。在上冲头和下冲头保持静止的状态下，3 /秒，用浆料填充腔体; 4）在施加磁场的同时，在上冲头和下冲头彼此靠近的磁场中通过压制成型制造合金粉末的成型体; 5）烧结成型体。', 'EP2013810728', 1372089600, 'EP2869319B1', 1533657600, 1430841600, NULL, 1533657600, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 27, 3, 0, 0, 0, NULL, NULL, NULL, '2012146704', 'JP', 1340899200, 10, 10, NULL, NULL, 13, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, 'JP1998241981A | JP2000353633A | JP2001058294A | JP2001093765A | JP2004281873A | JP2008218502A | JP2008243982A | JP2009016849A | JP2010215992A | JP2011216726A | US20070176329A1 | US6413457B1', NULL, NULL, 1, '\\20220510\\bb74edc4ee394edbb075c0e84a1e4aaa.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, '有效:DE | 失效:RS,NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,HU,SE,SI,MC,SK,SM,GB,IE,EE,CH,MT,IS,IT,GR,AL,ES,AT,CY,CZ,PL,RO,LI,TR,NL | 未确认:MK', 39762, 39764, 39763, 11);
INSERT INTO `os_patent` VALUES (23282, 'Production method and mold for rare earth sintered magnet', '稀土烧结磁体的生产方法及模具', 'EP2869318B1', 'The present invention provides a method for producing a rare earth sintered magnet, capable of reducing variation in magnetic characteristics of a rare earth sintered magnet and suppressing deformation of the rare earth sintered magnet. Disclosed is a method for producing a rare earth sintered magnet, including the steps of: preparing a slurry including an alloy powder and a dispersion medium at a predetermined ratio, the alloy powder containing at least a rare earth element; preparing a cavity enclosed with a mold, and an upper punch and a lower punch spaced from and opposed to each other, at least one of the upper punch and the lower punch being movable toward and away from the other one, at least one of the upper punch and the lower punch including an outlet for discharging the dispersion medium of the slurry and filtering the slurry, the mold having a cross sectional shape perpendicular to the sliding direction of the upper punch or the lower punch, the cross sectional shape being enclosed with an approximately arc-shaped outer circumference, an approximately arc-shaped inner circumference, and a pair of side circumferences connecting between the outer circumference and the inner circumference, a ratio of a distance between farthest ends of a pair of side circumferences to a distance between a top end of the outer circumference and a top end of the inner circumference being 1.5 or more, the upper punch or the lower punch being allowed to slide in a through-hole formed in the sliding direction along an outer peripheral surface including the outer circumference, an inner peripheral surface including the inner circumference, and the side circumference surfaces including the side circumferences; injecting the slurry into the cavity in a state where the upper punch and the lower punch remain stationary to fill the cavity with the slurry, a magnetic field being applied to the cavity; producing a molded body of the alloy powder by press molding in the magnetic field, the upper punch and the lower punch coming closer to each other while applying the magnetic field; and sintering the molded body; wherein the slurry is injected into the cavity so that the slurry travels from one place of the top end in the cross section perpendicular to the sliding direction of one of the outer peripheral surface and the inner peripheral surface, to one place of the top end in the cross section perpendicular to the sliding direction of the other one of the outer peripheral surface and the inner peripheral surface.', '本发明提供一种稀土类烧结磁铁的制造方法，能够降低稀土类烧结磁铁的磁特性的偏差，抑制稀土类烧结磁铁的变形。本发明公开了一种稀土烧结磁体的制造方法，包括以下步骤：以预定比例制备包含合金粉末和分散介质的浆料，该合金粉末至少含有稀土元素;准备用模具封闭的空腔，以及上冲头和下冲头彼此隔开并相对，上冲头和下冲头中的至少一个可朝向和远离另一个移动，至少一个上冲头和下冲头包括用于排出浆料的分散介质并过滤浆料的出口，该模具具有垂直于上冲头或下冲头的滑动方向的横截面形状，横截面形状为封闭有大致弧形的外圆周，近似弧形的内圆周，以及连接在外圆周和内圆周之间的一对侧圆周，一对圆周的最远端之间的距离与a的比率外圆周的顶端和内圆周的顶端之间的距离为1.5或更大，上冲头或下冲头允许在沿滑动方向形成的通孔中沿着包括其的外周表面滑动。外周，包括内周的内周表面和包括侧周的侧周表面;在上冲头和下冲头保持静止的状态下将浆料注入腔体中以用浆料填充腔体，将磁场施加到腔体;通过在磁场中模压成型制造合金粉末的成型体在施加磁场的同时，上冲头和下冲头彼此靠近;烧结成型体;其中，浆料被注入空腔中，使得浆料从垂直于外周表面和内周表面之一的滑动方向的横截面中的顶端的一个位置行进到顶端的一个位置。垂直于外周表面和内周表面中的另一个的滑动方向的横截面。', 'EP2013808911', 1372089600, 'EP2869318B1', 1554825600, 1430841600, NULL, 1554825600, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 26, 3, 0, 0, 0, NULL, NULL, NULL, '2012146708', 'JP', 1340899200, 9, 9, NULL, NULL, 14, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, 'EP0488334A2 | JP1977119612A | JP1993129127A | JP1993135937A | JP1994188138A | JP1995057914A | JP1999214216A | JP2002134314A | JP2007203577A | JP2008163466A | JP2009111169A | JP2010215992A | JP2010240956A | US5489343A', NULL, NULL, 1, '\\20220510\\e279f3ba728449309cf18b6e7b5e797b.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, '有效:DE | 失效:RS,NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,HU,SE,SI,MC,SK,SM,GB,IE,EE,CH,MT,IS,IT,GR,AL,ES,AT,CY,CZ,PL,RO,LI,TR,NL | 未确认:MK', 39759, 39761, 39760, 10);
INSERT INTO `os_patent` VALUES (23283, 'VERFAHREN ZUR HERSTELLUNG VON GESINTERTEN SELTENERDMAGNETEN', '生产烧结稀土磁铁的方法', 'DE602013041772T2', 'This method for producing rare earth sintered magnets is characterized by including: 1) a step in which a slurry is prepared, said slurry containing a dispersion medium, and an alloy powder containing a rare earth element, iron and boron, in a prescribed ratio; 2) a step in which a cavity is prepared, said cavity being surrounded by a mold, and an upper punch and a lower punch, at least one of which moves, enabling the punches to move toward and away from each other inside the mold, and at least one of which has a drain hole for draining the dispersion medium of the slurry; 3) a step in which a magnetic field of at least 1.5 T is applied to the inside of the cavity in the direction parallel to the direction in which the upper punch and/or lower punch is capable of moving, and the slurry is supplied at a flow rate of 20 to 600 cm3/second with the upper punch and the lower punch in a stationary state so as to fill the cavity with the slurry; 4) a step in which, with the magnetic field being applied as is, a molded body of the alloy powder is obtained by carrying out press molding in the magnetic field, which brings the upper punch and the lower punch close; and 5) a step in which the molded body is sintered.', '该稀土烧结磁体的制造方法的特征在于，包括：1）制备浆料的步骤，所述浆料含有分散介质，和含有稀土元素，铁和硼的合金粉末，以规定的比例; 2）准备空腔的步骤，所述空腔被模具包围，上冲头和下冲头，其中至少一个移动，使冲头能够在模具内朝向和远离彼此移动，至少一个具有排出孔，用于排出浆料的分散介质; 3）在平行于上冲头和/或下冲头能够移动的方向的方向上向腔体内部施加至少1.5T的磁场的步骤，并且在上冲头和下冲头处于静止状态时，流速为20至600立方厘米/秒，以便用浆料填充空腔; 4）在磁场施加磁场的情况下，通过在磁场中进行压制成型，使上冲头和下冲头闭合，得到合金粉末的成型体。 5）烧结成型体的步骤。', 'DE602013041772', 1372089600, 'DE602013041772T2', 1533657600, 1533657600, NULL, 1533657600, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 43, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39765, 39764, 39766, 11);
INSERT INTO `os_patent` VALUES (23284, 'HERSTELLUNGSVERFAHREN UND FORM FÜR GESINTERTE SELTENERDMAGNETEN', '用于烧结稀土磁铁的制造工艺和形式', 'DE602013053783T2', 'This production method for a rare earth sintered magnet is characterized in that a slurry is injected inside a cavity in such a manner that, among the outer peripheral surface and the inner peripheral surface, the slurry moves from one location of the apex in a cross section that is perpendicular to the sliding direction of one surface to one location of the apex in a cross section that is perpendicular to the sliding direction of the other surface.', '这种稀土烧结磁体的制造方法的特征在于，在腔体内注入浆料，使得在外周表面和内周表面中，浆料从横截面中的顶点的一个位置移动。在垂直于另一个表面的滑动方向的横截面中垂直于一个表面的滑动方向到顶点的一个位置。', 'DE602013053783', 1372089600, 'DE602013053783T2', 1554825600, 1554825600, NULL, 1554825600, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 42, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39767, 39761, 39768, 10);
INSERT INTO `os_patent` VALUES (23285, 'Method for producing NdFeB system sintered magnet', '钕铁硼系烧结磁铁的制造方法', 'US9837207B2', 'A method for producing a NdFeB system sintered magnet. The method includes: a hydrogen pulverization process, in which coarse powder of a NdFeB system alloy is prepared by coarsely pulverizing a lump of NdFeB system alloy by making this lump occlude hydrogen; a fine pulverization process, in which fine powder is prepared by performing fine pulverization for further pulverizing the coarse powder; a filling process, in which the fine powder is put into a filling container; an orienting process, in which the fine powder in the filling container is oriented; and a sintering process, in which the fine powder after the orienting process is sintered as held in the filling container. The processes from hydrogen pulverization through orienting are performed with neither dehydrogenation heating nor evacuation each for desorbing hydrogen occluded in the hydrogen pulverization process. The processes from hydrogen pulverization through sintering are performed in an oxygen-free atmosphere.', '一种制造NdFeB系烧结磁体的方法。该方法包括：氢气粉碎工艺，其中通过使该块吸收氢气粗粉碎NdFeB系合金块来制备NdFeB系合金的粗粉末;精细粉碎工艺，其中通过精细粉碎制备细粉末以进一步粉碎粗粉末;填充过程，其中将细粉末放入填充容器中;定向过程，其中填充容器中的细粉定向;和烧结过程，其中定向过程后的细粉在保持在填充容器中时被烧结。从氢气粉碎到定向的过程既不进行脱氢加热也不进行抽真空，以解吸在氢气粉碎过程中吸留的氢气。从氢粉碎到烧结的过程在无氧气氛中进行。', 'US14/397564', 1372262400, 'US9837207B2', 1512403200, 1430928000, NULL, 1512403200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 10, 3, 0, 0, 0, NULL, NULL, NULL, '2012164206', 'JP', 1343059200, 12, 12, NULL, NULL, 39, 0, 0, 0, 9, NULL, '880', NULL, 'KASTLER, SCOTT', 'LUK, VANESSA T', 'CN101517670A | CN102498531A | CN102842420A | CN103503087A | CN1157051A | CN1969347A | DE69633490D1 | DE69633490T2 | EP0778594A1 | EP1164599A2 | EP2071597A1 | EP2693450A1 | EP2693451A1 | EP2800108A1 | JP1979000255A | JP1997017674A | JP2007200142A | JP2008095969A | JP2008287653A | JP2009068034A | JP2013208215A | JP5400255B1 | KR1020090074767A | RU2009114155A | TW200823935A | US20040020563A1 | US20090252865A1 | US20100310408A1 | US20130189426A1 | US6187259B1 | US7056393B2 | US9028624B2 | WO1997001855A1 | WO2006043348A1 | WO2008032426A1 | WO2011004894A1 | WO2013100008A1', NULL, 'Feb. 29, 2016 First Office Action issued in Chinese Patent Application No. 201380039498.6. cited by applicant | Harris, Rex et al. \"Rare Earth Magnets\", [online], dated Aug. 7, 2001, [searched on Jul. 17, 2012], Internet. cited by applicant | Jan. 20, 2017 Office Action issued in Chinese Patent Application No. 201380039498.6. | Jan. 27, 2015 International Preliminary Report on Patentability issued in International Application No. PCT/JP2013/067677. cited by applicant | Jul. 20, 2015 Extended Search Report issued in European Patent Application No. 13822695.6. cited by applicant | Mar. 28, 2017 Office Action issued in Japanese Patent Application No. 2014-526830. cited by applicant | Oct. 1, 2013 Search Report issued in International Application No. PCT/JP2013/067677. cited by applicant | Popov, A. G. et al., \"Preparation of Sintered Nd--Fe--B Magnets by Pressless Process\", The Physics of Metals and Metallography, Apr. 17, 2012, vol. 113, No. 4, pp. 331-340. cited by applicant | Sep. 10, 2015 Office Action issued in Korean Patent Application No. 10-2014-7032439. cited by applicant', 1, '\\20220510\\bf452479052e4c7a9599ff6447c69293.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 39769, 39771, 39770, 13);
INSERT INTO `os_patent` VALUES (23286, '발명의 명칭 NdFeB계 소결 자석의 제조 방법', '发明名称NdFeB基烧结磁体的制造方法', 'KR101599663B1', '본 발명은, 입계(粒界) 확산법의 기재로서 사용했을 때에 희토류 리치상(rich相)을 통하여 RH가 확산하기 쉽고,게다가 기재 그 자체의 보자력(保磁力)이 높은 NdFeB계 소결 자석을 제조하는 방법을 제공하는 것을 과제로한다. NdFeB계 합금괴에 수소를 흡장시키는 것에 의해 해당 NdFeB계 합금괴를 거칠게 파쇄하는 것에 의해 조분을제작하는 수소 파쇄 공정(스텝 S1)과, 해당 조분을 더 분쇄하는 것에 의해 미분말을 제작하는 미분쇄 공정(스텝S2)과, 해당 미분말을 충전 용기에 충전하는 충전 공정(스텝 S3)과, 미분말을 충전 용기에 충전한 채로 배향하는배향 공정(스텝 S4)과, 배향 공정 후의 미분말을 충전 용기에 충전한 채로 소결하는 소결 공정(스텝 S5)을 가지며, 수소 파쇄 공정으로부터 배향 공정까지의 각 공정에 대해서, 해당 수소 파쇄 공정에서 흡장된 수소를 이탈시키기 위한 탈수소 가열 및 진공 흡인을 모두 행하지 않으며, 수소 파쇄 공정으로부터 소결 공정까지를 무산소 분위기 하에서 행한다.', '在本发明中,当用作晶界扩散方法的基板时,RH通过稀土富相(富相)容易地扩散,进一步制造具有高锥形(电力)的基于NdFeB的烧结磁体。它是a任务提供方法。通过在基于NDFEB的合金化的氢气中增加氢气破碎过程(步骤S1),用于通过进一步研磨通过进一步研磨制备细粉末的细粗粉末(步骤S2),充电步骤(步骤S3)将细粉填充到填充容器(步骤S3)和定向过程(步骤S4)以取向(步骤S4),以在填充容器中加入(步骤S4),然后后取向过程烧结步骤(步骤S5)(步骤S5),以及脱氢加热和真空抽吸没有从氢碎过程进行取向步骤,并且在氢碎片过程中不进行氢分馏和真空吸入物,烧结过程在偶氮型气氛下进行。', 'KR1020147032439', 1372262400, 'KR101599663B1', 1456934400, 1419264000, NULL, 1456329600, '韩国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 11, 3, 0, 0, 0, NULL, NULL, NULL, '2012164206', 'JP', 1343059200, 12, 12, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2005268538A | JP2007134353A | JP2012160545A | KR1020090074767A', NULL, NULL, 1, '\\20220510\\3a1adbc1d66c4cb587b4e12e16f55eea.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39769, 39771, 39770, 13);
INSERT INTO `os_patent` VALUES (23287, 'NdFeB系焼結磁石の製造方法', 'NdFeB基烧结磁体的制造方法', 'JP6271425B2', '本発明は、粒界拡散法の基材として使用したときに希土類リッチ相を通してRHが拡散しやすく、さらに基材そのものの保磁力が高いNdFeB系焼結磁石を製造する方法を提供することを課題とする。NdFeB系合金塊に水素を吸蔵させることにより該NdFeB系合金塊を粗解砕することにより粗粉を作製する水素解砕工程(ステップS1)と、該粗粉をさらに粉砕することにより微粉末を作製する微粉砕工程(ステップS2)と、該微粉末を充填容器に充填する充填工程(ステップS3)と、微粉末を充填容器に充填したまま配向する配向工程(ステップS4)と、配向工程後の微粉末を充填容器に充填したまま焼結する焼結工程(ステップS5)とを有し、水素解砕工程から配向工程までの各工程を、該水素解砕工程において吸蔵された水素を脱離させるための脱水素加熱及び真空引きをいずれも行うことなく行い、水素解砕工程から焼結工程までを無酸素雰囲気下で行う。', '当用作晶界扩散法的基础材料时,本发明是富犀牛相H本发明的一个目的是提供一种制造基于NDFEB的烧结磁体的方法,其具有衬底本身的高矫顽力和基板本身的高矫顽力。通过在基于NdFeB的合金质量中储存氢气通过储存氢气来粉碎粗粉末,通过进一步粉碎粗粉(步骤S1)细分步骤(步骤S2)进一步粉碎细粉(步骤S2)进一步粉碎细粉(步骤S2)进一步粉碎被制造,填充填充容器的细粉(步骤S3)(步骤S3),取向步骤(步骤S4)与填充容器将细粉末对准(步骤S4),以及在具有烧结的方向过程之后步骤(步骤S5)用填料容器中的粉末的细粉末烧结,每个方法从氢碎过程中除去对取向步骤的每种方法。脱氢加热和真空凹陷无需任何脱氢加热和真空图,以及从烧结步骤的氢碎步骤都在毒气质下进行。', 'JP2014526830', 1372262400, 'JP6271425B2', 1517328000, 1467820800, NULL, 1515686400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 10, 3, 0, 0, 0, NULL, NULL, NULL, '2012164206', 'JP', 1343059200, 12, 12, NULL, NULL, 9, 0, 0, 0, 1, NULL, '863', NULL, '右田 勝則', NULL, 'JP1997017674A | JP2002246253A | JP2006019521A | JP2007134353A | JP2012079726A | JP5400255B1 | WO2006043348A1 | WO2008032426A1 | WO2011004894A1', NULL, 'Rex Harris and A.J. Williams、\"Rare Earth Magnets\"、[online]、2001年8月7日、[2012年7月17日検索]、インターネット<URL:http://www.azom.com/article.aspx?ArticleID=637>', 1, '\\20220510\\0734cb002c894ec3a850e96e7585baf6.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39769, 39771, 39770, 13);
INSERT INTO `os_patent` VALUES (23288, '希土類系焼結磁石の製造方法および成形装置', '用于制造稀土基土烧结磁体的方法和设备', 'JP5967203B2', '希土類元素を含む合金粉末と分散媒とを含むスラリーを準備し、\n\n少なくとも一方が移動して互いに接近離間可能でかつ、少なくとも一方が前記スラリーの前記分散媒を排出する排出孔を有する上パンチ及び下パンチを、金型内に設けた複数の貫通孔のそれぞれに配置して、前記金型と前記上パンチ及び下パンチとに取り囲まれたキャビティを複数準備し、\n\n 前記複数のキャビティのそれぞれの内部に、前記上パンチ及び下パンチの少なくとも一方が移動可能な方向と略平行な方向に電磁石により磁界を印加した後、前記金型の外周側面から前記複数のキャビティのそれぞれまで分岐せずに延在する複数のスラリー供給路を介して、前記複数のキャビティのそれぞれの内部に前記スラリーを供給し、\n\n 前記磁界を印加したままで、前記上パンチ及び下パンチを接近させて、前記複数のキャビティのそれぞれの内部に前記合金粉末の成形体を得る、希土類系焼結磁石の製造方法である。', '本发明提供一种稀土类烧结磁铁的制造方法及其成型装置，能够稳定地成型单位重量变化小的成型体。本发明提供一种稀土类烧结磁铁的制造方法，其包括以下步骤：1）制备包含含有稀土元素的合金粉末和分散介质的浆料; 2）在设置在模具中的相应通孔中设置上冲头和下冲头，从而制备由模具包围的多个腔体，以及上冲头和下冲头，上冲头和下冲头中的至少一个可以朝向和远离另一个移动，上冲头和下冲头包括用于排出浆料的分散介质的出口; 3）通过电磁铁在基本上平行于上冲头和下冲头中的至少一个可移动的方向的方向上在每个腔中施加磁场，然后通过电磁铁将浆料供应到多个腔中。多个浆料供给路径从模具的外周侧表面延伸到每个空腔而不分支; 4）在施加磁场的同时，在上冲头和下冲头彼此靠近的磁场中通过压制成型在每个腔中生产合金粉末的成型体; 5）烧结成型体。', 'JP2014530549', 1376236800, 'JP5967203B2', 1470758400, 1469635200, NULL, 1468512000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 21, 3, 0, 0, 0, NULL, NULL, NULL, '2012179163', 'JP', 1344787200, 10, 10, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '五貫 昭一', NULL, 'JP1996069908A | JP2003136563A | JP2006253526A | JP2007203577A | JP2010214765A | WO2005096331A1', NULL, NULL, 1, '\\20220510\\92198f7c20c4433da18406aad3fdcdc5.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 39772, 39774, 39773, 11);
INSERT INTO `os_patent` VALUES (23289, '希土類系焼結磁石の製造方法および成形装置', '用于制造稀土基土烧结磁体的方法和设备', 'JP5939302B2', '希土類元素を含む合金粉末と分散媒とを含むスラリーを準備し、\n\n 少なくとも一方が移動して互いに接近および離間可能でかつ、少なくとも一方が前記スラリーの前記分散媒を排出するための排出孔を有する上パンチ及び下パンチを、金型内に設けた貫通孔に配置して、前記金型と前記上パンチ及び下パンチに取り囲まれたキャビティを準備し、\n\n 前記キャビティ内部に、前記上パンチ及び下パンチの少なくとも一方が移動可能な方向と略平行な方向に電磁石により磁界を印加した後、前記金型の外周側面から前記キャビティまで延在するスラリー供給路に接続され前記磁界を通過する部分の少なくとも一部が、外部磁界遮蔽材料により覆われたスラリー流路を介して、前記キャビティ内部に前記スラリーを供給し、\n\n 前記磁界を印加したままで、前記上パンチ及び下パンチを接近させて、前記キャビティ内部に前記合金粉末の成形体を得る、\n\n 希土類系焼結磁石の製造方法である。', '制备含有稀土元素的含有合金粉末和分散介质,\n\n至少一个移动和进入并彼此分开,并且至少一个被放置在模具中的通孔上,具有上冲头和下冲孔,其中排出孔用于排出浆料的分散介质。准备腔包围的腔模具和上冲头和下冲孔,\n\n在腔中,将上冲头和下冲头中的至少一个施加到可移动方向和磁场施加到基本平行于磁场施加到浆料供应方向的方向的方向的方向从模具类型的外周侧表面延伸到腔的路径,通过由外部磁场屏蔽材料覆盖的浆料通道在腔内供应至少一部分通过磁场的部分的至少一部分。\n\n利用磁场,使上冲头和下冲头接近,得到腔内的合金粉末的模制体,\n\n它是制造稀土烧结磁体的方法。', 'JP2014530552', 1376236800, 'JP5939302B2', 1466524800, 1466524800, NULL, 1464278400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 27, 3, 0, 0, 0, NULL, NULL, NULL, '2012179192', 'JP', 1344787200, 11, 11, NULL, NULL, 3, 0, 0, 0, 0, NULL, NULL, NULL, '五貫 昭一', NULL, 'JP1987251109A | JP1996069908A | JP2002286619A', NULL, NULL, 1, '\\20220510\\7c066c1d1f464a7f8d1c23c5909f9352.png', NULL, NULL, 1, NULL, NULL, 16, NULL, NULL, NULL, 39775, 39777, 39776, 12);
INSERT INTO `os_patent` VALUES (23290, 'Method for producing rare-earth sintered magnet, and molding machine therefor', '稀土烧结磁铁的制造方法及其成型机', 'US10090102B2', 'The present invention provides a method for producing a rare earth sintered magnet and a molding device therefor that can stably mold molded bodies with less variation in unit weight. The method includes: 1) preparing a slurry that includes an alloy powder containing a rare earth element, and a dispersion medium; 2) disposing an upper punch and a lower punch in respective through holes provided in a die, thereby preparing a plurality of cavities; 3) applying a magnetic field in each of the cavities by an electromagnet in a direction substantially parallel to a direction in which at least one of the upper punch and the lower punch is movable, and then supplying the slurry into the plurality of cavities; 4) producing a molded body of the alloy powder in each of the cavities by press molding in the magnetic field; and 5) sintering the molded body.', '本发明提供一种稀土类烧结磁铁的制造方法及其成型装置，能够稳定地成型单位重量变化小的成型体。该方法包括：1）制备包含含有稀土元素的合金粉末和分散介质的浆料; 2）在设置在模具中的相应通孔中设置上冲头和下冲头，从而制备多个腔体; 3）通过电磁铁在基本上平行于上冲头和下冲头中的至少一个可移动的方向的方向上在每个腔中施加磁场，然后将浆料供应到多个腔中; 4）在磁场中通过压制成型在每个腔中制造合金粉末的成型体; 5）烧结成型体。', 'US14/420570', 1376236800, 'US10090102B2', 1538409600, 1438790400, NULL, 1538409600, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 17, 3, 0, 0, 0, NULL, NULL, NULL, '2012179163', 'JP', 1344787200, 10, 10, NULL, NULL, 18, 0, 0, 0, 5, NULL, '870', NULL, 'YANG, JIE', NULL, 'CN1158176A | CN1158176C | JP1995183148A | JP1996069908A | JP1997035599A | JP1997258889A | JP2006253526A | JP2007203577A | JP2008076572A | JP2009037567A | JP2010215992A | JP2012075200A | US20060219323A1 | US20070176329A1 | US20150206656A1 | US5489343A | US6413457B1 | WO2005096331A1', NULL, 'Communication dated Oct. 24, 2017 from the European Patent Office in counterpart European application No. 13879303.9. cited by applicant. | International Preliminary Report on Patentability, dated Feb. 26, 2015 issued by the International Searching Authority in counterpart Application No. PCT/JP2013/071797. cited by applicant | International Search Report of PCT/JP2013/071797, dated Sep. 3, 2013. [PCT/ISA/210]. cited by applicant | NPL: Machinhe translation of Otsuka et al, JP 2010215992A, Sep. 2010. | NPL: Machinhe translation of Otsuka et al, JP 2010215992A, Sep. 2010. cited by examiner', 1, '\\20220510\\8d76059695b3426b9eeda33a5cd41cc2.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 39772, 39774, 39773, 11);
INSERT INTO `os_patent` VALUES (23291, 'Method for producing rare-earth sintered magnet and molding device', '稀土烧结磁铁的制造方法及成型装置', 'EP2884505B1', 'The present invention provides a method for producing a rare earth sintered magnet and a molding device therefor that can stably mold molded bodies with less variation in unit weight. Provided is a method for producing a rare earth sintered magnet, including the steps of: 1) preparing a slurry that includes an alloy powder containing a rare earth element, and a dispersion medium; 2) disposing an upper punch and a lower punch in respective through holes provided in a die, thereby preparing a plurality of cavities enclosed by the die, and the upper punch and the lower punch, at least one of the upper punch and the lower punch being movable toward and away from the other one, the upper punch and the lower punch including an outlet for discharging the dispersion medium of the slurry; 3) applying a magnetic field in each of the cavities by an electromagnet in a direction substantially parallel to a direction in which at least one of the upper punch and the lower punch is movable, and then supplying the slurry into the plurality of cavities via a plurality of slurry supply paths extending from an outer peripheral side surface of the die to each of the cavities without being branched; 4) producing a molded body of the alloy powder in each of the cavities by press molding in the magnetic field in which the upper punch and the lower punch come closer to each other while applying the magnetic field; and 5) sintering the molded body.', '本发明提供一种稀土类烧结磁铁的制造方法及其成型装置，能够稳定地成型单位重量变化小的成型体。本发明提供一种稀土类烧结磁铁的制造方法，其包括以下步骤：1）制备包含含有稀土元素的合金粉末和分散介质的浆料; 2）在设置在模具中的相应通孔中设置上冲头和下冲头，从而制备由模具包围的多个腔体，以及上冲头和下冲头，上冲头和下冲头中的至少一个可以朝向和远离另一个移动，上冲头和下冲头包括用于排出浆料的分散介质的出口; 3）通过电磁铁在基本上平行于上冲头和下冲头中的至少一个可移动的方向的方向上在每个腔中施加磁场，然后通过电磁铁将浆料供应到多个腔中。多个浆料供给路径从模具的外周侧表面延伸到每个空腔而不分支; 4）在施加磁场的同时，在上冲头和下冲头彼此靠近的磁场中通过压制成型在每个腔中生产合金粉末的成型体; 5）烧结成型体。', 'EP2013879303', 1376236800, 'EP2884505B1', 1539100800, 1434470400, NULL, 1539100800, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 23, 3, 0, 0, 0, NULL, NULL, NULL, '2012179163', 'JP', 1344787200, 10, 10, NULL, NULL, 8, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, 'JP1995183148A | JP1996069908A | JP2006253526A | JP2007203577A | JP2010215992A | US20060219323A1 | US6413457B1 | WO2005096331A1', NULL, NULL, 1, '\\20220510\\dc28549bf68b4e6089f241169bd196be.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, '有效:DE | 失效:RS,NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,HU,SE,SI,MC,SK,SM,GB,IE,EE,CH,MT,IS,IT,GR,AL,ES,AT,CY,CZ,PL,RO,LI,TR,NL | 未确认:MK', 39772, 39774, 39773, 11);
INSERT INTO `os_patent` VALUES (23292, 'Method for producing rare-earth sintered magnet, and molding machine therefor', '稀土烧结磁铁的制造方法及其成型机', 'US10176921B2', 'The present invention provides a method for producing a rare earth sintered magnet and a molding device therefor that can stably mold molded bodies with less variation in unit weight. The method includes: 1) preparing a slurry including an alloy powder and a dispersion medium, the alloy powder containing a rare earth element; 2) disposing an upper punch and a lower punch in respective through holes provided in a die, thereby preparing a plurality of cavities; 3) applying a magnetic field in each of the cavities by an electromagnet in a direction substantially parallel to a direction in which at least one of the upper punch and the lower punch is movable, and then supplying the slurry into the plurality of cavities; 4) producing a molded body of the alloy powder in each of the cavities by press molding in the magnetic field; and 5) sintering the molded body.', '本发明提供一种稀土烧结磁体的制造方法及其成型装置，其能够稳定地成型单位重量变化较小的成型体。该方法包括：1）制备包含合金粉末和分散介质的浆料，该合金粉末含有稀土元素; 2）在设置在模具中的相应通孔中设置上冲头和下冲头，从而制备多个腔体; 3）通过电磁铁在基本上平行于上冲头和下冲头中的至少一个可移动的方向的方向上在每个腔中施加磁场，然后将浆料供应到多个腔中; 4）在磁场中通过压制成型在每个腔中制造合金粉末的成型体; 5）烧结成型体。', 'US14/421047', 1376236800, 'US10176921B2', 1546876800, 1437580800, NULL, 1546876800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 25, 3, 0, 0, 0, NULL, NULL, NULL, '2012179192', 'JP', 1344787200, 11, 11, NULL, NULL, 13, 0, 0, 0, 3, NULL, '870', NULL, 'MINSKEY, JACOB T', 'DARNELL, BAILEIGH KATE', 'JP1987251109A | JP1996069908A | JP2010215992A | US20020185766A1 | US20060219323A1 | US20070176329A1 | US20080230957A1 | US20090108970A1 | US20110205006A1 | US2513242A | US3786857A | US5489343A | US8066498B2', NULL, 'Communication dated Mar. 8, 2016 from the European Patent Office issued in corresponding Application No. 13879307.0. cited by applicant | International Preliminary Report on Patentability dated Feb. 26, 2015, issued by the International Bureau of WIPO in counterpart International application No. PCT/JP2013/071801. cited by applicant. | International Search Report for PCT/JP2013/071801 dated Sep. 3, 2013 [PCT/ISA/210]. cited by applicant', 1, '\\20220510\\a4bc4d4c271648ca86d973be19868a3a.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 39775, 39777, 39776, 12);
INSERT INTO `os_patent` VALUES (23293, 'Method for producing rare-earth sintered magnet and molding device', '稀土烧结磁铁的制造方法及成型装置', 'EP2884506B8', 'The present invention provides a method for producing a rare earth sintered magnet and a molding device therefor that can stably mold molded bodies with less variation in unit weight even though a large magnetic field, for example, 1. 5 T or more is applied during press molding in the magnetic field, by disposing cavities. The method for producing a rare earth sintered magnet according to the present invention includes the steps of: 1) preparing a slurry including an alloy powder and a dispersion medium, the alloy powder containing a rare earth element; 2) disposing an upper punch and a lower punch in respective through holes provided in a die, thereby preparing a plurality of cavities enclosed by the die, and the upper punch and the lower punch, at least one of the upper punch and the lower punch being movable toward and away from the other one, at least one of the upper punch and the lower punch including an outlet for discharging the dispersion medium of the slurry; 3) applying a magnetic field in each of the cavities by an electromagnet in a direction substantially parallel to a direction in which at least one of the upper punch and the lower punch is movable, and then supplying the slurry into the plurality of cavities via slurry flow paths connected to slurry supply paths extending from an outer peripheral side surface of the die to each of the cavities, wherein at least a part of a portion of the slurry flow path passing through a magnetic field formed by the electromagnet is covered by an external magnetic field shielding material being capable of shielding the magnetic field; 4) producing a molded body of the alloy powder in each of the cavities by press molding in the magnetic field, the upper punch and the lower punch coming closer to each other while applying the magnetic field; and 5) sintering the molded body.', '本发明提供一种稀土类烧结磁铁的制造方法及其成型装置，即使在施压过程中施加大的磁场，例如1.5T以上，也能够稳定地成型单位重量变化小的成形体。通过设置空腔在磁场中成型。本发明的稀土类烧结磁铁的制造方法包括以下步骤：1）制备含有合金粉末和分散介质的浆料，该合金粉末含有稀土元素; 2）在设置在模具中的相应通孔中设置上冲头和下冲头，从而制备由模具包围的多个腔体，上冲头和下冲头，上冲头和下冲头中的至少一个可以朝向和远离另一个移动，上冲头和下冲头中的至少一个包括用于排出浆料的分散介质的出口; 3）施加磁力通过电磁铁在每个空腔中的场，其方向基本上平行于上冲头和下冲头中的至少一个可移动的方向，然后通过连接到浆料的浆料流路将浆料供应到多个空腔中供给路径从模具的外周侧表面延伸到每个空腔，其中通过由电磁铁形成的磁场的浆料流动路径的一部分的至少一部分被外部磁场屏蔽材料覆盖。能够屏蔽磁场; 4）通过在磁场中压制成型在每个腔中制造合金粉末的成型体，上冲头和下冲头在施加磁场的同时彼此靠近; 5）烧结成型体。', 'EP2013879307', 1376236800, 'EP2884506B8', 1548172800, 1434470400, NULL, 1548172800, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B8', NULL, NULL, 1, 3, 0, 0, 0, NULL, NULL, NULL, '2012179192', 'JP', 1344787200, 11, 11, NULL, NULL, 6, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, 'JP1987251109A | JP1996069908A | JP2010215992A | US20020185766A1 | US20060219323A1 | US20080230957A1', NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 14, NULL, NULL, '有效:DE | 失效:RS,NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,HU,SE,SI,MC,SK,SM,GB,IE,EE,CH,MT,IS,IT,GR,AL,ES,AT,CY,CZ,PL,RO,LI,TR,NL | 未确认:MK', 39775, 39777, 39776, 12);
INSERT INTO `os_patent` VALUES (23294, 'VERFAHREN ZUR HERSTELLUNG EINES SELTENERD-SINTERMAGNETEN UND GIESSVORRICHTUNG', '制造稀土烧结磁铁和铸造装置的方法', 'DE602013045060T2', 'This method for producing rare-earth sintered magnets comprises: preparing a slurry including a dispersion medium and an alloy powder that includes a rare-earth element; arranging an upper punch and a lower punch in each of a plurality of through holes provided in a mold, and preparing a plurality of cavities each surrounded by the mold, the upper punch, and the lower punch, wherein at least one of the upper punch and the lower punch is movable and the upper punch and the lower punch can come close to and separate from one another and at least one of the upper punch and the lower punch has a discharge hole for discharging the dispersion medium of the slurry; applying a magnetic field inside each of the cavities with an electromagnet in a direction substantially parallel to the direction in which at least one of the upper punch and the lower punch is movable, and then supplying the slurry into each of the cavities via a plurality of slurry supply paths that extend, without branching, from an outer peripheral side surface of the mold to the respective cavities; and bringing the upper punch and the lower punch close to one another while applying the magnetic field and obtaining a molded body of the alloy powder inside each cavity.', '该稀土类烧结磁铁的制造方法包括：制备含有分散介质和含有稀土类元素的合金粉末的浆料。在设置在模具中的多个通孔中的每一个中布置上冲头和下冲头，并准备多个腔体，每个腔体由模具，上冲头和下冲头围绕，其中至少一个上冲头下冲头可以移动，上冲头和下冲头可以彼此靠近和分离，上冲头和下冲头中的至少一个具有排出孔，用于排出浆料的分散介质;利用电磁铁在每个空腔内施加磁场，其方向基本平行于上冲头和下冲头中的至少一个可移动的方向，然后通过多个空腔将浆料供应到每个空腔中。浆料供应路径从模具的外周侧表面延伸到相应的空腔，而没有分支;并且在施加磁场的同时使上冲头和下冲头彼此靠近并在每个腔内获得合金粉末的成型体。', 'DE602013045060', 1376236800, 'DE602013045060T2', 1539100800, 1539100800, NULL, 1539100800, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 42, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 39778, 39774, 39779, 11);
INSERT INTO `os_patent` VALUES (23295, 'VERFAHREN ZUR HERSTELLUNG EINES SELTENERD-SINTERMAGNETEN UND FORMVORRICHTUNG', '制造稀土烧结磁铁和模塑装置的方法', 'DE602013047628T2', 'This method for producing a rare-earth sintered magnet comprises: preparing a slurry including a dispersion medium and an alloy powder that includes a rare-earth element; arranging an upper punch and a lower punch in a through hole provided in a mold, and preparing a cavity surrounded by the mold, the upper punch, and the lower punch, wherein at least one of the upper punch and the lower punch is movable and the upper punch and the lower punch can come close to and separate from one another and at least one of the upper punch and the lower punch has a discharge hole for discharging the dispersion medium of the slurry; applying a magnetic field inside the cavity with an electromagnet in a direction substantially parallel to the direction in which at least one of the upper punch and the lower punch is movable, and then supplying the slurry into the cavity via a slurry flow path connected to a slurry supply path that extends from an outer peripheral side surface of the mold to the cavity, wherein at least a portion of the slurry flow path in a section which passes the magnetic field is covered with an external magnetic field shielding material; and bringing the upper punch and the lower punch close to one another while applying the magnetic field and obtaining a molded body of the alloy powder inside the cavity.', '该稀土类烧结磁铁的制造方法包括：制备含有分散介质和含有稀土类元素的合金粉末的浆料。在设置在模具中的通孔中设置上冲头和下冲头，并准备由模具，上冲头和下冲头围绕的空腔，其中上冲头和下冲头中的至少一个是可移动的，并且上冲头和下冲头可以彼此靠近和分离，上冲头和下冲头中的至少一个具有排出孔，用于排出浆料的分散介质;利用电磁铁在空腔内部施加磁场，其方向基本上平行于上冲头和下冲头中的至少一个可移动的方向，然后通过连接到空腔的浆料流路将浆料供应到空腔中。从模具的外周侧表面延伸到空腔的浆料供应路径，其中在通过磁场的部分中的浆料流动路径的至少一部分被外部磁场屏蔽材料覆盖;并且在施加磁场的同时使上冲头和下冲头彼此靠近并在腔内获得合金粉末的成型体。', 'DE602013047628', 1376236800, 'DE602013047628T2', 1543334400, 1543334400, NULL, 1543334400, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 54, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 16, NULL, NULL, NULL, 39780, 39777, 39781, 12);
INSERT INTO `os_patent` VALUES (23296, 'Ndfeb-based sintered magnet', '钕铁硼基烧结磁铁', 'EP2889883B1', 'The present invention aims to provide a NdFeB system sintered magnet capable of improving the magnetization characteristic. The NdFeB system sintered magnet according to the present invention is a NdFeB system sintered magnet with the c axis oriented in one direction, characterized in that: the median of the grain size of the crystal grains at a section perpendicular to the c axis is 4.5 µm or less, and the area ratio of the crystal grains having grain sizes of 1.8 µm or smaller on the aforementioned section is 5 % or lower. The median of the grain size is decreased (to 4.5 µm or less), whereby improve the coercive force is improved. Simultaneously, the area ratio of the crystal grains having grain sizes of 1.8 µm or smaller is decreased (to 5 % or lower) to reduce the number of crystal grains having no magnetic wall formed, whereby the magnetization characteristic is improved.', '本发明的目的在于提供一种能够改善磁化特性的NdFeB系烧结磁铁。根据本发明的NdFeB系烧结磁体是cd轴在一个方向上取向的NdFeB系烧结磁体，其特征在于：在垂直于c轴的截面处晶粒的晶粒尺寸的中值为4.5μm在上述部分中，晶粒尺寸为1.8μm或更小的晶粒的面积比率为5％或更低。晶粒尺寸的中值减小（至4.5μm或更小），从而改善矫顽力。同时，具有1.8μm或更小的晶粒尺寸的晶粒的面积比减小（至5％或更低），以减少没有形成磁壁的晶粒的数量，从而改善磁化特性。', 'EP2013833670', 1377532800, 'EP2889883B1', 1488902400, 1435680000, NULL, 1488902400, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 25, 2, 0, 0, 0, NULL, NULL, NULL, '2012186584', 'JP', 1345996800, 12, 12, NULL, NULL, 8, 0, 0, 0, 0, NULL, '876', NULL, NULL, NULL, 'JP2005197662A | JP2005320628A | JP2006019521A | JP2012060139A | US20100194509A1 | WO2008032426A1 | WO2012008623A1 | WO2013146781A1', NULL, NULL, 1, '\\20220510\\95e8b40d9f3f4ec5a167f3ea3dcb706f.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, '有效:DE | 失效:RS,NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,HU,SE,SI,MC,SK,SM,GB,IE,MK,EE,CH,MT,IS,IT,GR,AL,ES,AT,CY,CZ,PL,RO,LI,TR,NL', 39782, 39784, 39783, 13);
INSERT INTO `os_patent` VALUES (23297, 'NdFeB系焼結磁石', 'NdFeB系焼结磁石', 'JP6186363B2', '本発明は、着磁特性を高めることができるNdFeB系焼結磁石を提供することを課題とする。本発明に係るNdFeB系焼結磁石は、c軸が1方向に配向したNdFeB系焼結磁石であって、前記c軸に垂直な断面における結晶粒の粒径の中央値が4.5μm以下であり、前記断面における、前記粒径が1.8μm以下である結晶粒の面積率が5%以下であることを特徴とする。前記粒径の中央値を小さく(4.5μm以下と)することにより保磁力を高めると共に、該粒径が1.8μm以下である結晶粒の面積率を小さく(5%以下と)することにより、磁壁が形成されない結晶粒を少なくし、それにより着磁特性を向上させることができる。', '本发明的目的是提供一种能够增强磁化特性的基于NDFEB的烧结磁体。 根据本发明的基于NDFEB的烧结磁体是基于NDFEB的烧结磁体,其中C轴在一个方向上取向,并且垂直于C轴的横截面中的晶粒的中值粒度为4.5 μm或更小。横截面中粒径为1.8μm或更小的晶粒的配位表征为5%或更低。 通过增加粒径(至4.5μm或更小)的中心值,渗透率增加,粒径为1.8μm或更小的晶粒的面积比小(5%或更小),畴壁未形成的晶粒可以减小,从而改善磁化特性。', 'JP2014533015', 1377532800, 'JP6186363B2', 1503417600, 1470585600, NULL, 1501776000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 2, 0, 0, 0, NULL, NULL, NULL, '2012186584', 'JP', 1345996800, 12, 12, NULL, NULL, 4, 0, 0, 0, 0, NULL, '863', NULL, '堀 拓也', NULL, 'JP2005197662A | JP2006019521A | JP2012060139A | WO2008032426A1', NULL, NULL, 1, '\\20220510\\e82ee31736ca4b3e8825fb6f1a43d359.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39782, 39784, 39783, 13);
INSERT INTO `os_patent` VALUES (23298, '발명의 명칭 NdFeB계 소결자석', 'NdFeB基烧结磁体', 'KR101662465B1', '본 발명은 착자 특성을 높일 수 있는 NdFeB계 소결자석을 제공하는 것을 과제로 한다. 본 발명에 관한 NdFeB계소결자석은 c축이 1 방향으로 배향한 NdFeB계 소결자석으로서, 상기 c축에 수직한 단면에서의 결정립의 입경의중앙값이 4.5㎛ 이하이고, 상기 단면에 있어서, 상기 입경이 1.8㎛ 이하인 결정립의 면적률이 5% 이하인 것을 특징으로 한다. 상기 입경의 중앙값을 작게(4.5㎛ 이하로) 함으로써 보자력을 높일뿐만 아니라, 상기 입경이 1.8㎛이하인 결정립의 면적률을 작게(5% 이하로) 함으로써 자벽이 형성되지 않은 결정립을 적게 하여, 이로써 착자 특성을 향상시킬 수 있다.', '本发明的发明目的是提供一种NdFeB系烧结磁铁来提高磁特性。的烧结钕铁硼磁体是NdFeB烧结磁体C-轴根据本发明中的第一方向取向，晶粒C的粒径在部分垂直于轴线的中位数为小于或等于4.5㎛，在上述的横截面，直径1。和该晶粒的面积率不超过5％或更少8㎛特征。以及通过降低粒径（小于4.5㎛）的中位数，其中的1粒径增大矫顽力。通过降低晶粒8㎛或以下的面积率（5％或更少）的晶粒，可以通过磁畴壁减少不形成，由此，磁特性提高。', 'KR1020157004431', 1377532800, 'KR101662465B1', 1475510400, 1428422400, NULL, 1474905600, '韩国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 22, 2, 0, 0, 0, NULL, NULL, NULL, '2012186584', 'JP', 1345996800, 12, 12, NULL, NULL, 6, 2, 2, 2, 0, NULL, NULL, NULL, NULL, NULL, 'JP1993271881A | JP2005197662A | JP2010177603A | JP2012060139A | KR1020060018864A | WO2012008623A1', 'CN108538561A | CN108538561B', NULL, 1, '\\20220510\\231c0e0d7639432c9fef17e11beba676.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39782, 39784, 39783, 13);
INSERT INTO `os_patent` VALUES (23299, 'NdFeB system sintered magnet', '钕铁硼系烧结磁铁', 'US10546673B2', 'The present invention aims to provide a NdFeB system sintered magnet capable of improving the magnetization characteristic. The NdFeB system sintered magnet is a NdFeB system sintered magnet with the c axis oriented in one direction, characterized in that: the median of the grain size of the crystal grains at a section perpendicular to the c axis is 4.5 μm or less, and the area ratio of the crystal grains having grain sizes of 1.8 μm or smaller on the aforementioned section is 5% or lower. The median of the grain size is decreased (to 4.5 μm or less), whereby improve the coercive force is improved. Simultaneously, the area ratio of the crystal grains having grain sizes of 1.8 μm or smaller is decreased (to 5% or lower) to reduce the number of crystal grains having no magnetic wall formed, whereby the magnetization characteristic is improved.', '本发明旨在提供一种能够改善磁化特性的NdFeB系烧结磁体。  NdFeB系烧结磁铁是c轴朝向一个方向的NdFeB系烧结磁铁，其特征在于：垂直于c轴的截面的晶粒的粒径中值在4.5μm以下，且 在上述截面上，晶粒尺寸为1.8μm以下的晶粒的面积比为5％以下。 晶粒尺寸的中值减小（至4.5μm或更小），由此改善了矫顽力。 同时，减小具有1.8μm或更小的晶粒尺寸的晶粒的面积比（至5％或更小），以减少没有形成磁壁的晶粒的数量，从而改善磁化特性。', 'US14/419350', 1377532800, 'US10546673B2', 1580140800, 1438790400, NULL, 1580140800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 21, 2, 0, 0, 0, NULL, NULL, NULL, '2012186584', 'JP', 1345996800, 12, 12, NULL, NULL, 15, 0, 0, 0, 8, NULL, '880', NULL, 'HOBAN, MATTHEW E.', NULL, 'CN101809689A | CN1969347A | JP2005197662A | JP2005320628A | JP2006019521A | JP2010177603A | JP2012060139A | US20070175544A1 | US20090252865A1 | US20100194509A1 | US20120064671A1 | US20130189426A1 | WO2008032426A1 | WO2012008623A1 | WO2013146781A1', NULL, 'Apr. 22, 2016 Office Action issued in Korean Patent Application No. 10-2015-7004431. cited by applicant | Dec. 10, 2013 International Search Report issued in International Patent Application No. PCT/JP2013/072842. cited by applicant | Malvern Panalytical. \"Laser Diffraction (LD)\". https://www.malvernpanalytical.com/en/products/technology/light-scatterin- g/laser-diffraction. Retrieved on Jul. 9, 2018. cited by examiner | Mar. 21, 2017 Office Action issued in Japanese Patent Application No. 2014-533015. cited by applicant | Mar. 3, 2015 International Preliminary Report on Patentability issued in International Application No. PCT/JP2013/072842. cited by applicant | Sep. 13, 2016 Office Action issued in Chinese Patent Application No. 201380045295.8. cited by applicant | Sep. 9, 2015 extended Search Report issued in European Patent Application No. 13833670.6. cited by applicant | Uestuener. Dependence of the Mean Grain Size and Coercivity of Sintered Nd--Fe--B Magnets on the Initial Powder Particle Size. IEEE Transactions on Magnetics, vol. 42, No. 10, Oct. 2006. cited by examiner', 1, '\\20220510\\48bbbc633cfd47e6ba05471aa31faa85.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 39782, 39784, 39783, 13);
INSERT INTO `os_patent` VALUES (23300, 'SINTERMAGNET AUF NDFEB-BASIS', 'NDFEB基地上的烧结磁铁', 'DE602013018426T2', 'The present invention addresses the problem of providing an NdFeB-based sintered magnet, wherein it is possible to improve the magnetization properties. This NdFeB-based sintered magnet in which the c axis is oriented in one direction is characterized in that the center value of the particle size of crystal particles in a cross-section that is perpendicular to the c axis is 4.5 μm or smaller, and the area ratio of crystal particles having a particle size of 1.8 μm or smaller is 5% or smaller in the cross-section. The coercive magnetic force is increased by minimizing the center value of the particle sizes (to 4.5 μm or smaller), and the number of crystal particles on which a magnetic wall is not formed is reduced by minimizing the area ratio of the crystal particles having a particle size of 1.8 μm or smaller (to 5% or smaller), thereby being able to improve the magnetization properties.', '本发明解决了提供NdFeB基烧结磁体的问题，其中可以改善磁化性能。该cd取向为一个方向的NdFeB系烧结磁铁，其特征在于，与c轴垂直的截面中的结晶粒子的粒径的中心值为4.5μm以下，粒径为1.8μm以下的结晶粒子的面积比的截面积为5％以下。通过使粒径的中心值最小化（至4.5μm或更小）来增加矫顽磁力，并且通过使具有a的晶体颗粒的面积比最小化来减少未形成磁壁的晶体颗粒的数量。粒径为1.8μm或更小（至5％或更小），从而能够改善磁化性能。', 'DE602013018426', 1377532800, 'DE602013018426T2', 1488902400, 1488902400, NULL, 1488902400, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 33, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '876', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39785, 39784, 39786, 13);
INSERT INTO `os_patent` VALUES (23301, 'R-T-B系焼結磁石の製造方法', 'R-T-B基烧结磁体的制备方法', 'JP6222518B2', '【課題】成形体の表面を油剤で覆った後、成形体が油剤で滑り成形体同士が衝突することにより成形体に欠けが発生することを防止し、焼結時の油剤を除去するための処理に長時間要さないようにするR-T-B系焼結磁石の製造方法の提供。\n\n【解決手段】酸素含有量4000質量ppm以下のR-T-B系焼結磁石用合金粉末(Rは希土類元素(イットリウム(Y)を含む)の少なくとも1種でネオジム(Nd)を必ず含み、Tは鉄(Fe)または鉄とコバルト(Co)、Bはホウ素を意味する)を圧縮成形し、それによって成形体を作製する成形工程と、前記成形体の表面全体に油剤を圧力0.2MPa以上0.4MPa以下、噴霧量1L/hr以上2L/hr以下、噴霧時間3秒以上6秒以下で噴霧する噴霧工程と、前記噴霧工程後の成形体を焼結する焼結工程と、を含むR-T-B系焼結磁石の製造方法。\n\n【選択図】図1', '本发明的一个目的是防止模塑体具有具有油剂的模塑体,并将模塑体与油剂碰撞,并防止烧结体并在烧结时去除油料。提供在制造基于RTB的烧结磁体的方法中,不需要长时间处理。\n\nSolutismors Solutems Suepee Ionmmarary Solutism产品刺激Sule Intems:氧气含量4000昆丝磁铁PPM合金粉末(R是稀土元素(含Yttrium(Y))至少一个钕(Nd),T是铁(Fe)或铁,钴( CO),B表示硼的压缩成型的形成步骤,从而产生模塑体,以及在模塑主体的整个表面上具有0.2MPa或更高的压力为0.2MPa或更高的油剂的油剂。喷涂以1升/小时或更长的喷雾量和2L / hr或更低的喷涂步骤,以及喷涂时间3秒或更长时间和6秒或更小的喷涂步骤,以及烧结模制体的烧结步骤在喷涂过程之后,在喷涂过程后烧结模制体的烧结步骤;生产方法。\n\n图1', 'JP2013203819', 1380470400, 'JP6222518B2', 1509465600, 1428854400, NULL, 1507824000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 8, 0, 0, 0, 0, NULL, NULL, NULL, '池田 安希子', NULL, 'JP1994325962A | JP2000012317A | JP2002008935A | JP2002170728A | JP2006156789A | JP2006281063A | WO2006098238A1 | WO2012105399A1', NULL, NULL, 1, '\\20220510\\7b5d10a1976c433fab4f00fd7483fe0d.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39787, 39789, 39788, 2);
INSERT INTO `os_patent` VALUES (23302, '希土類系焼結磁石をバレル研磨する方法', '滚磨抛光稀土基烧结磁体的方法', 'JP6221579B2', '【課題】  使用済み研削液から研削液を効率的に再生し、再生した研削液と研削用メディアを用いて希土類系焼結磁石をバレル研磨する方法を提供すること。\n\n【解決手段】  磁石のバレル研磨に用いた研削液を磁石と研削用メディアから分離した後、研削液にセルロース粉末を混合してからフィルタープレスで濾過し、得られた濾液を研削液として用いて磁石をバレル研磨することを特徴とする。\n\n【選択図】  図1', '本发明的一个目的是提供一种方法,其通过有效地从用过的研磨液体和使用再生研磨液和研磨介质,通过有效地再现稀土基烧结磁体的稀土烧结磁体。\n\n将用于从磁体和研磨介质的磁体的桶抛光的研磨溶液分离后,将纤维素粉末混合在研磨溶液中,然后通过过滤器压机过滤,并将所得滤液用作研磨溶液。它是其特征在于磁铁是桶。\n\n图1', 'JP2013203076', 1380470400, 'JP6221579B2', 1509465600, 1428854400, NULL, 1507824000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 8, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 8, 0, 0, 0, 0, NULL, NULL, NULL, '宮部 菜苗', NULL, 'JP2001334110A | JP2002011649A | JP2004130191A | JP2006055924A | JP2009135174A | JP2012187558A | US4235051A | US4285821A', NULL, NULL, 1, '\\20220510\\2f89200fdff44ac481467e004b740861.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 39790, 39792, 39791, 2);
INSERT INTO `os_patent` VALUES (23303, 'R-T-B系焼結磁石の製造方法', 'R-T-B基烧结磁体的制备方法', 'JP6249275B2', '【課題】磁石内部のより奥深くまでRHを拡散させ、磁石の端部と中心部の保磁力の差が少なく、磁石全体の保磁力を向上させたR-T-B系焼結磁石を提供する。\n\n【解決手段】  本発明のR-T-B系焼結磁石の製造方法は、少なくとも1つのR-T-B系焼結磁石体を準備する工程と、重希土類元素RHを含有するRH拡散源を準備する工程と、前記R-T-B系焼結磁石体と前記RH拡散源とを処理室内に装入する工程と、前記R-T-B系焼結磁石体と前記RH拡散源とを、前記処理室内にて加熱することにより、前記RH拡散源から前記R-T-B系焼結磁石体にRHを供給しつつ拡散させるRH拡散工程と、を包含するR-T-B系焼結磁石の製造方法において、前記R-T-B系焼結磁石体は、希土類元素の含有量が14.2原子%以上14.6原子%以下、炭素含有量が800ppm以下、酸素含有量が1500ppm以上4000ppm以下、であることを特徴とする。\n\n【選択図】図1', '本发明的一个目的是提供一种基于RTB的烧结磁体,其中RH被漫射比磁体的内部更深的更深,并且磁体的端部的矫顽力和中心部分小,并且矫顽力整个磁铁得到改善。\n\n制造本发明的RTB的烧结磁体的方法制备至少一个基于RTB的烧结磁体并制备含有重稀土元素RH的RH扩散源;通过加热烧结磁体,RTB的RTB漫射源在处理室中加热到处理室中的主体和RH扩散源和基于RTB的烧结磁体和RH扩散源。在加工室中加热。在制造基于RTB的烧结磁体的方法中,包括在供应时扩散的RH扩散步骤RH至基于RTB的烧结磁体,RTB的烧结磁体是14.2稀土元素的含量。原子%或更高,14.6原子%或更低,碳含量为800ppm或更小,氧含量是1500 ppm以上且4000 ppm或更低。\n\n图1', 'JP2013203822', 1380470400, 'JP6249275B2', 1513699200, 1428854400, NULL, 1512057600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 4, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 8, 0, 0, 0, 0, NULL, NULL, NULL, '池田 安希子', NULL, 'JP2004071949A | JP2009016853A | JP2012109369A | WO2007102391A1 | WO2008139690A1 | WO2009107397A1 | WO2012008426A1 | WO2013108830A1', NULL, NULL, 1, '\\20220510\\24c33dcf0876468b88046f9707485bdf.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39793, 39795, 39794, 2);
INSERT INTO `os_patent` VALUES (23304, 'Method and system for separating rare earth elements', '分离稀土元素的方法及系统', 'US9435009B2', 'An objective of the invention is to provide a method and system for separating a particular rare earth element from a rare earth magnet at a high separation ratio and by a simple process. There is provided a rare earth separation method for separating a first and a second groups of rare earth elements contained in a magnet, the method including: a starting powder preparation step from the magnet; a magnet component oxidation heat treatment step; a rare earth oxide separation step from the magnet components oxide powder; a powder size optimization step; a chlorinating agent mixing step; a chlorination/oxychlorination heat treatment step of forming a “first group rare earth chlorides”/“second group rare earth oxychlorides” mixture; a selective dissolution step of selectively dissolving the first group rare earth chlorides in the solvent and leaving the second group rare earth oxychlorides undissolved in solid phase form; and a solid-liquid separation step.', '本发明的目的是提供一种以高分离比和简单的方法从稀土磁体中分离特定稀土元素的方法和系统。本发明提供一种分离磁铁中所含的第一和第二组稀土元素的稀土分离方法，该方法包括：由磁铁制备的起始粉末制备步骤;磁铁组件氧化热处理步骤;从磁体成分氧化物粉末中分离出稀土氧化物;粉末尺寸优化步骤;氯化剂混合步骤;氯化/氧氯化热处理步骤，形成“第一组稀土氯化物”/“第二组稀土氧氯化物”混合物;选择性溶解步骤，选择性地将第一组稀土氯化物溶解在溶剂中，使第二组稀土氯氧化物不溶于固相形式;和固液分离步骤。', 'US14/422796', 1381161600, 'US9435009B2', 1473091200, 1444838400, NULL, 1473091200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 37, 6, 0, 0, 0, NULL, NULL, NULL, '2012225110 | 2012225120 | 2013160348', 'JP | JP | JP', 1349798400, 7, 7, NULL, NULL, 8, 0, 0, 0, 3, NULL, '896', NULL, 'BOS, STEVEN', NULL, 'JP2001303149A | JP2004276204A | JP2013176431A | US20140356258A1 | US3102783A | US4680055A | WO2012137727A1 | WO2013103099A1', NULL, 'International Search Report dated Jan. 21, 2014 with English translation (five (5) pages). cited by applicant | Itoh et al., \"Extraction of Rare Earth Elements from Nd--Fe--B Magnet Scraps by NH.sub.4Cl,\" Chemistry Letters, 2008, pp. 372-373, vol. 37, No. 3 (two (2) pages). cited by applicant. | Itoh et al., \"Novel rare earth recovery process on Nd--Fe--B magnet scrap by selective chlorination using NH.sub.4Cl,\" Journal of Alloys and Compounds, 2009, pp. 484-487, vol. 477, No. 1-2 (four (4) pages). cited by applicant', 1, '\\20220510\\18fc561e5e704c4daad5b03d6272950d.png', NULL, NULL, 1, NULL, NULL, 33, NULL, NULL, NULL, 39796, 39798, 39797, 7);
INSERT INTO `os_patent` VALUES (23305, 'Corrosion-resistant magnet and method for producing the same', '耐腐蚀磁铁及其制造方法', 'US9275795B2', 'An object of the present invention is to provide an R—Fe—B based sintered magnet having on a surface thereof a chemical conversion film with higher corrosion resistance than a conventional chemical conversion film such as a phosphate film, and a method for producing the same. The corrosion-resistant magnet of the present invention as a means for achieving the object is characterized by comprising a chemical conversion film containing at least Zr, Nd, fluorine, and oxygen as constituent elements and not containing phosphorus directly on a surface of an R—Fe—B based sintered magnet, wherein R is a rare-earth element including at least Nd.', '本发明的目的是提供一种R-Fe-B系烧结磁铁及其制造方法，该烧结磁铁的表面具有比以往的化学转化膜如磷酸盐膜具有更高耐腐蚀性的化学转化膜。 。作为实现该目的的手段，本发明的耐腐蚀性磁铁的特征在于，含有至少含有Zr，Nd，氟和氧作为构成元素且不在R-表面直接含有磷的化学转化膜。 Fe-B基烧结磁体，其中R是至少包含Nd的稀土元素。', 'US14/089543', 1385308800, 'US9275795B2', 1456761600, 1395849600, NULL, 1456761600, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 3, 0, 0, 0, NULL, NULL, NULL, '2008176029 | 2008176033 | PCT/JP2009/061913', 'JP | JP | WO', 1215100800, 16, 16, NULL, NULL, 10, 0, 0, 0, 2, NULL, '875', NULL, 'ZHENG, LOIS', NULL, 'JP1992042517A | JP2000199074A | JP2002198241A | JP2004221196A | JP2008060183A | JP2008270699A | US20020036029A1 | US20070071979A1 | US6281774B1 | WO2002103080A1', NULL, 'International Search Report for International Application No. PCT/JP2009/061913 dated Dec. 1, 2009. cited by applicant | Office Action issued on Dec. 3, 2013 corresponding to Japanese patent application No. 2010-128628. cited by applicant', 1, '\\20220510\\2f8e317faa99490a9c076f2c9ea52638.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39433, 39435, 39434, 17);
INSERT INTO `os_patent` VALUES (23306, 'R-T-B系焼結磁石', 'R-T-B系焼结磁石', 'JP6229938B2', '【課題】Dyの含有量を抑制しつつ、高いBrと高いHcJを有するR-T-B系焼結磁石の提供。\n\n【解決手段】式uRwBxInyCuzAlqM残部T(RはRLとRHからなり、RLはNd及び/又はPr、RHはDy及び/又はTb、TはFeでありFeの10%以下をCoで置換でき、MはNb及び/又はZrであり、u、w、x、y、z、qは質量%を示し、不可避的不純物を含む)によって表わされ、RHはR-T-B系焼結磁石の5質量%以下、0.3≦x≦1.5、0.07≦y≦0.2、0.05≦z≦0.5、0≦q≦0.1であり、酸素量(質量%)をα、窒素量(質量%)をβ、炭素量(質量%)をγとしたとき、v=u-(6α+10β+8γ)であって、v、wが、50w-18.5≦v≦50w-14、-12.5w+38.75≦v≦-62.5w+86.125、を満足するR-T-B系焼結磁石。\n\n【選択図】図1', '要解决的问题:高B,同时抑制DY的内容r和高H.cJ提供R-T-B基烧结磁体。\n\n[溶液] URWBXYCUZALQM残留T(R是R1和RH,RL是R1,Nd和/或Pr,RH,Dy和/或Tb,T是Fe,10%或更少的Fe可以用CO代替。M.是Nb和/或Zr,U,W,X,Y,Z和Q由质量%,包括不可避免的杂质)表示,RH为5质量%的RTB的烧结磁体,0.3≤x≤1.5,0.07≤ Y≤0.2,0.2,0.2,0.2,0.2,0.2,0≤q≤0.1,氧气量(质量%)是α,氮(质量%)。β,碳量(质量%)当γ时,v = u- (6α+10β+8γ),V,W为50W-18.5≤v≤50w-14,-12.5 w +38.75≤v≤-62.5 w + 86.125,满足RTB的烧结磁体。\n\n图1', 'JP2013243498', 1385395200, 'JP6229938B2', 1510675200, 1433347200, NULL, 1509033600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 9, 0, 0, 0, 0, NULL, NULL, NULL, '右田 勝則', NULL, 'JP1995240308A | JP1998199717A | JP2003510467A | JP2008264875A | WO2005015580A1 | WO2009122709A1 | WO2009150843A1 | WO2013008756A1 | WO2015022946A1', NULL, NULL, 1, '\\20220510\\196a4e384dc944a5be4779f6f7785c54.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39799, 39801, 39800, 2);
INSERT INTO `os_patent` VALUES (23307, 'ホウ素を含む希土類元素の酸化物のホウ素含量を低減する方法', '降低包括硼的稀土元素的氧化物的硼含量的方法', 'JP6281261B2', '【課題】  ホウ素を含む希土類元素の酸化物のホウ素含量を簡便に低減する方法を提供すること。\n\n【解決手段】  ホウ素を含む希土類元素の酸化物をアルカリ金属の炭酸塩および/または酸化物とともに熱処理することを特徴とする。熱処理は1150℃以上で行うことが望ましい。\n\n【選択図】  図1', '本发明的一个目的是提供一种简单地减少含有硼的稀土元素的氧化物的硼含量的方法。\n\n用碱金属碳酸盐和/或氧化物热处理包含硼的稀土元素的氧化物。希望热处理在1150℃或更高。\n\n图1', 'JP2013245662', 1385568000, 'JP6281261B2', 1519142400, 1404921600, NULL, 1517500800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, '2012260223', 'JP', 1354032000, 3, 3, NULL, NULL, 3, 0, 0, 0, 0, NULL, NULL, NULL, '米田 健志', NULL, 'JP1991207825A | JP2004068082A | WO2013018710A1', NULL, NULL, 1, '\\20220510\\6bc8179fcbcb4e309a16e831c5713917.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39802, 39804, 39803, 3);
INSERT INTO `os_patent` VALUES (23308, '希土類元素の回収方法', '回收稀土元素的方法', 'JP6299181B2', '(修正有)\n\n【課題】低コストで簡易なリサイクルシステムとして実用化が可能な、少なくとも希土類元素と鉄族元素を含む処理対象物から希土類元素を回収する方法を提供する。\n\n【解決手段】処理対象物に対して酸化処理を行った後、処理環境を炭素の存在下に移して1300℃以上の温度で熱処理1し、得られた熱処理物を水と反応させ、希土類元素を含む粉末を回収する工程を少なくとも含む回収方法。酸化処理を行った処理対象物の炭素の存在下での熱処理を、炭素るつぼを処理容器及び炭素供給源として用いて行い、処理対象物の少なくとも一部が500μm以下の粒径を有する粒状ないし粉末状であり、更に熱処理物と水の反応を、熱処理物を空気中2に放置して空気中の水と反応させることで行うことが好ましい。処理対象物がR-Fe-B系永久磁石である。\n\n【選択図】図1', '(纠正)\n\n本发明的一个目的是提供一种从包括至少稀土元素和铁基团的过程对象中回收稀土元素的方法。\n\n在相对于加工靶的氧化处理后,将加工环境转移到存在碳,热处理1和所得热处理与水反应,稀土元素是至少恢复过程的回收方法。含粉末。使用碳坩埚作为加工容器和碳源的碳坩埚进行碳坩埚的热处理,并且至少一部分加工对象具有粒径的粒状或粉末通过将热处理产物留在空气中并与空气中的水反应来留下热处理和水反应,优选通过留下热处理和水反应来进行500μm或更小。处理对象是R-Fe-B永磁体。\n\n图1', 'JP2013245620', 1385568000, 'JP6299181B2', 1522166400, 1410969600, NULL, 1520524800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 2, 0, 0, 0, NULL, NULL, NULL, '2012260225 | 2013021602', 'JP | JP', 1354032000, 2, 2, NULL, NULL, 12, 0, 0, 0, 1, NULL, NULL, NULL, '祢屋 健太郎', NULL, 'JP1983136728A | JP2002012921A | JP2002060863A | JP2009249674A | JP2012041588A | JP2013199698A | JP2013227639A | JP2014145099A | US6309441B1 | WO2007119846A1 | WO2010098381A1 | WO2013018710A1', NULL, '小野 勝敏ら,“希土類の再資源化技術の研究開発”,マッチング·ファンド方式による産学連携研究開発事業 研究開発プロジェクト総括研究成果報告書,日本,2001年 5月,pp.1-20', 1, '\\20220510\\4513fdafe7374be1bc2985b0d14808f9.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39805, 39807, 39806, 2);
INSERT INTO `os_patent` VALUES (23309, 'PHƯƠNG PHÁP THU HỒI NGUYÊN TỐ ĐẤT HIẾM', '稀有金属回收方法', 'VN44335A', 'Sáng chế đề cập đến phương pháp thu hồi nguyên tố đất hiếm từ phôi gia công chứa ít nhất là nguyên tố đất hiếm và nguyên tố nhóm sắt, phương pháp này có thể được áp dụng trong thực tế do hệ thống tái chế đơn giản và có chi phí thấp. Phương pháp thu hồi nguyên tố đất hiếm từ phôi gia công chứa ít nhất là nguyên tố đất hiếm và nguyên tố nhóm sắt, khác biệt ở chỗ, phương pháp này bao gồm ít nhất là bước tách nguyên tố đất hiếm ở dạng oxit ra khỏi nguyên tố nhóm sắt bằng cách xử lý oxy hóa phôi gia công, tiếp đó chuyển môi trường xử lý thành môi trường trong đó có mặt muội than, và xử lý nhiệt phôi gia công đã xử lý oxy hóa này ở nhiệt độ lớn hơn hoặc bằng 1000°C trong môi trường khí trơ hoặc trong chân không.', '本发明涉及从含有至少稀土元素和铁族元素的工件中回收稀土元素的方法，该方法由于简单的回收系统和实践可以应用于实践中。成本低廉。从含有至少稀土元素和铁族元素的工件中回收稀土元素的方法的不同之处在于，该方法至少包括以氧化物形式分离稀土元素的步骤。通过氧化工件，然后将处理环境转移到存在碳的环境中的铁族元素，以及在更高温度下处理该氧化的工件的热处理或在惰性或真空环境中等于1000℃。', 'VN1201502732', 1387987200, 'VN44335A', 1445788800, 1445788800, NULL, NULL, '越南', NULL, NULL, NULL, NULL, 8, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 32, 3, 0, 0, 0, NULL, NULL, NULL, '2012283287 | 2013133415', 'JP | JP', 1356451200, 11, 11, NULL, NULL, 0, 0, 0, 0, 0, NULL, '897', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39808, 39810, 39809, 12);
INSERT INTO `os_patent` VALUES (23310, '希土類元素の回収方法', '回收稀土元素的方法', 'JP5598635B1', '本発明の課題は、低コストで簡易なリサイクルシステムとして実用化が可能な、少なくとも希土類元素と鉄族元素を含む処理対象物から希土類元素を回収する方法を提供することである。その解決手段としての本発明の少なくとも希土類元素と鉄族元素を含む処理対象物から希土類元素を回収する方法は、処理対象物に対して酸化処理を行った後、処理環境をカーボンブラックの存在下に移し、不活性ガス雰囲気中または真空中において、1000℃以上の温度で熱処理することで、希土類元素を酸化物として鉄族元素から分離する工程を少なくとも含んでなることを特徴とする。', '本发明的一个目的是提供一种从加工目的中回收稀土元素的方法,包括至少可以作为低成本和简单回收系统的实际用途的至少稀土元素和铁组元素。一种从包括至少稀土元素和铁基元素作为溶液装置回收稀土元素作为溶液装置的方法是在处理目标上进行氧化处理后存在炭黑的加工环境。它的特征是通过在惰性气体气氛或真空中温度或更高的热处理,其特征在于至少将稀土元素与铁基元素分离的步骤。', 'JP2014516521', 1387987200, 'JP5598635B1', 1412092800, 1412092800, NULL, 1408636800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 18, 3, 0, 0, 0, NULL, NULL, NULL, '2012283287 | 2013133415', 'JP | JP', 1356451200, 11, 11, NULL, NULL, 4, 0, 0, 0, 1, NULL, NULL, NULL, '向井 佑', NULL, 'JP2005002463A | JP2009249674A | JP2012041588A | WO2010098381A1', NULL, 'NAKAMOTO Masashi  他5名,Extraction of Rare Earth Elements as Oxides from a Neodymium Magnetic Sludge,Metallurgical and Materials Transactions B,米国,The Minerals, Metals &amp; Materials Society,2012年  6月,Vol.43 No.3,Page.468-476', 1, '\\20220510\\8564c81c95c2491c864020f8b8f75515.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39808, 39810, 39809, 12);
INSERT INTO `os_patent` VALUES (23311, 'Method for collecting rare earth element', '稀土元素的收集方法', 'EP2940163B1', 'An object of the present invention is to provide a method for recovering a rare earth element from a workpiece containing at least a rare earth element and an iron group element, which can be put into practical use as a low-cost, simple recycling system. The method for recovering a rare earth element from a workpiece containing at least a rare earth element and an iron group element of the present invention as a means for resolution is characterized by including at least a step of separating a rare earth element in the form of an oxide from an iron group element by subjecting a workpiece to an oxidation treatment, then turning the treatment environment into an environment where carbon black is present, and subjecting the oxidation-treated workpiece to a heat treatment at a temperature of 1000°C or more in an inert gas atmosphere or in vacuum.', '本发明的一个目的是提供一种从含有至少稀土元素和铁族元素的工件中回收稀土元素的方法，该方法可以作为低成本，简单的再循环系统投入实际使用。从含有至少一种本发明的稀土元素和铁族元素的工件中回收稀土元素作为拆分手段的方法的特征在于，至少包括以下形式分离稀土元素的步骤：通过对工件进行氧化处理，然后将处理环境转变为存在炭黑的环境，并使氧化处理的工件在1000℃或更高的温度下进行热处理，来自铁族元素的氧化物在惰性气体气氛或真空中。', 'EP2013869804', 1387987200, 'EP2940163B1', 1505232000, 1446566400, NULL, 1505232000, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 18, 3, 0, 0, 0, NULL, NULL, NULL, '2012283287 | 2013133415', 'JP | JP', 1356451200, 11, 11, NULL, NULL, 5, 0, 0, 0, 3, NULL, '874', NULL, NULL, NULL, 'JP2005002463A | JP2006077264A | JP2009249674A | JP2012041588A | WO2010098381A1', NULL, 'MASASHI NAKAMOTO ET AL: \"Extraction of Rare Earth Elements as Oxides from a Neodymium Magnetic Sludge\", METALLURGICAL AND MATERIALS TRANSACTIONS B, SPRINGER-VERLAG, NEW YORK, vol. 43, no. 3, 14 December 2011 (2011-12-14), pages 468-476, XP035055724, ISSN: 1543-1916, DOI: 10.1007/S11663-011-9618-Y | Metallurgical and Materials Transactions B,Springer Verlag,VOL.43,468 | NAKAMOTO MASASHI ET AL.: \'Extraction of Rare Earth Elements as Oxides from a Neodymium Magnetic Sludge\' METALLURGICAL AND MATERIALS TRANSACTIONS B vol. 43, no. 3, June 2012, pages 468 - 476, XP035055724', 1, '\\20220510\\24c7c79ed400431b858fd5ef586ff8c1.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, '有效:DE,BE,FR | 失效:RS,NO,FI,PT,BG,DK,LT,LU,LV,HR,HU,SE,SI,MC,SK,SM,GB,IE,MK,EE,CH,MT,IS,IT,GR,AL,ES,AT,CY,CZ,PL,RO,LI,TR,NL', 39808, 39810, 39809, 12);
INSERT INTO `os_patent` VALUES (23312, 'Method for recovering rare earth element', '回收稀土元素的方法', 'US10081040B2', 'An object of the present invention is to provide a method for recovering a rare earth element from a workpiece containing at least a rare earth element and an iron group element, which can be put into practical use as a low-cost, simple recycling system. The method for recovering a rare earth element from a workpiece containing at least a rare earth element and an iron group element of the present invention as a means for resolution is characterized by including at least a step of separating a rare earth element in the form of an oxide from an iron group element by subjecting a workpiece to an oxidation treatment, then turning the treatment environment into an environment where carbon black is present, and subjecting the oxidation-treated workpiece to a heat treatment at a temperature of 1000° C. or more in an inert gas atmosphere or in vacuum.', '本发明的一个目的是提供一种从含有至少稀土元素和铁族元素的工件中回收稀土元素的方法，该方法可以作为低成本，简单的再循环系统投入实际使用。从含有至少一种本发明的稀土元素和铁族元素的工件中回收稀土元素作为拆分手段的方法的特征在于，至少包括以下形式分离稀土元素的步骤：通过对工件进行氧化处理，然后将处理环境转变为存在炭黑的环境，并将经氧化处理的工件在1000℃的温度下进行热处理，或来自铁族元素的氧化物或更多在惰性气体环境中或真空中。', 'US14/654906', 1387987200, 'US10081040B2', 1537804800, 1449072000, NULL, 1537804800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 3, 0, 0, 0, NULL, NULL, NULL, '2012283287 | 2013133415', 'JP | JP', 1356451200, 11, 11, NULL, NULL, 8, 1, 0, 0, 4, NULL, '875', NULL, 'BOS, STEVEN J', NULL, 'CN1511966A | JP1987279083A | JP2006189214A | JP2007258238A | JP2013176431A | US20140186239A1 | US3549350A | WO2010098381A1', 'EP1643902B1', 'Extended European search report dated Aug. 4, 2016 for the corresponding European patent application No. 1389804.8. cited by applicant | First Office Action dated Oct. 8, 2016, in the corresponding Chinese patent application No. 201380068234.3. cited by applicant | International Search Report for International Application No. PCT/JP2013/084922 dated Apr. 1, 2014. cited by applicant. | M. Nakamoto, et al.; \"Extension of Rare Earth Elements as Oxides from a Neodymium Magnetic Sludge,\" Metallurgical and Materials Transactions B; vol. 43B; Jun. 2012; pp. 468-476 (9 Sheets)/Cited in International Search Report. cited by applicant', 1, '\\20220510\\f5a54721c9e34a178b0549bb8d5d5466.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39808, 39810, 39809, 12);
INSERT INTO `os_patent` VALUES (23313, 'VERFAHREN ZUM SAMMELN EINES SELTENERDELEMENTS', '收集稀土元素的方法', 'DE602013026730T2', 'The present invention addresses the problem of providing a method for collecting a rare earth element from a material of interest containing at least the rare earth element and an iron-group element, which can be used as a simple recycle system that can be conducted at low cost. The method for collecting a rare earth element from a material of interest containing at least the rare earth element and an iron-group element according to the present invention, which is a means for solving the problem, is characterized by comprising at least the steps of subjecting the material of interest to an oxidation treatment, then changing the treatment environment for the material of interest to an environment in which carbon black is present, and then further subjecting the material to a heat treatment in an inert gas atmosphere or in a vacuum at a temperature of 1000°C or higher, thereby separating the rare earth element in the form of an oxide from the iron-group element.', '本发明解决了提供一种从含有至少稀土元素和铁族元素的感兴趣材料中收集稀土元素的方法的问题，该方法可以用作可以在低温下进行的简单循环系统。成本。从至少含有根据本发明的稀土元素和铁族元素的目标材料中收集稀土元素的方法，其特征在于，至少包括以下步骤：使感兴趣的材料经受氧化处理，然后将感兴趣的材料的处理环境改变为存在炭黑的环境，然后在惰性气体气氛或真空中进一步对材料进行热处理。温度为1000℃或更高，从而将氧化物形式的稀土元素与铁族元素分离。', 'DE602013026730', 1387987200, 'DE602013026730T2', 1505232000, 1505232000, NULL, 1505232000, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 32, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '855', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39811, 39810, 39812, 12);
INSERT INTO `os_patent` VALUES (23314, '洗浄装置およびこの装置を用いた被洗浄物の洗浄方法', '清洁设备和使用该设备清洁待清洁物体的方法', 'JP6269053B2', '【課題】 希土類系永久磁石などの被洗浄物を効率的かつ効果的に洗浄することができる洗浄装置を提供すること。\n\n【解決手段】 槽腹部を貫通移動するネットコンベアの上下面に対向させて少なくとも一対の超音波振動子が配設された洗浄槽を備え、洗浄液が充填された洗浄槽内でネットコンベアに載置された被洗浄物を上下の超音波振動子の間に搬送して超音波洗浄する洗浄装置であって、上下の超音波振動子の間を除いて、ネットコンベアに載置された被洗浄物は押さえネットによってコンベア上に制止された状態で搬送されるように構成され、かつ、装置の運転中、洗浄液が洗浄槽内に絶えず供給されるとともに、洗浄槽の底面に設けられた洗浄液の排出孔から洗浄液が絶えず排出されるが、洗浄槽内への洗浄液の供給量を洗浄槽内からの洗浄液の排出量よりも多くすることで、洗浄槽内に洗浄液が充填された状態を維持することができるように構成されていることを特徴とする。\n\n【選択図】 図1', '要解决的问题：提供一种能够有效地洗涤诸如稀土永磁体的洗涤目标物品的洗涤设备。解决方案：提供一种洗涤设备，包括洗涤槽，其中至少一对超声换能器设置成面向移动通过罐体部分的网状输送器的上表面和下表面，从而输送安装在网上的洗涤目标物品。在洗涤槽内的上部和下部超声波换能器之间的输送器，洗涤液被填充到其中，洗涤设备被配置成在洗涤目标物品被约束在输送机上的状态下输送安装在网状输送机上的洗涤目标物品除了上部和下部超声波换能器之间的区域之外，通过压网，在设备操作期间，洗涤液被恒定地供应到洗涤槽中并且从设置在洗涤槽的底表面中的洗涤液排出口不断地排出，以及通过设定供给能够保持洗涤槽中的洗涤液填充的状态供应到洗涤槽中的洗涤液的量大于从洗涤槽内排出的洗涤液的排出量。', 'JP2013271302', 1388073600, 'JP6269053B2', 1517328000, 1436112000, NULL, 1515686400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 8, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '青木 正博', NULL, 'JP1973015372U | JP1987180785A | JP1993220459A | JP1998128256A | JP1999319738A | JP3052378U | US20020023661A1', NULL, NULL, 1, '\\20220510\\a3216551480c4d5693899380e9bcf58b.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39813, 39815, 39814, 2);
INSERT INTO `os_patent` VALUES (23315, 'PHƯƠNG PHÁP THU HỒI NGUYÊN TỐ ĐẤT HIẾM NẶNG', '重度稀释恢复方法', 'VN44644A', 'Sáng chế đề xuất phương pháp thu hồi nguyên tố đất hiếm nặng từ phôi gia công chứa ít nhất là nguyên tố đất hiếm nặng và nguyên tố nhóm sắt có thể được áp dụng trong thực tế do hệ thống tái chế đơn giản và có chi phí thấp, khác biệt ở chỗ, phương pháp này bao gồm ít nhất bước sau đây: xử lý oxy hóa hoặc trộn phôi gia công với hợp kim làm nam châm trên cơ sở R-Fe-B đã xử lý oxy hóa, và tiếp đó xử lý nhiệt với sự có mặt của cacbon ở nhiệt độ lớn hơn hoặc bằng 100oC, nhờ đó tách nguyên tố đất hiếm nặng ở dạng oxit ra khỏi nguyên tố nhóm sắt.', '本发明提出一种从工件中回收重稀土元素的方法，该方法包括至少一种重稀土元素和铁元素，由于简单且成本有效的再循环系统，该元素可以在实践中应用。低，不同之处在于该方法至少包括以下步骤：氧化处理或用氧化锑基R-Fe-B磁化合金混合工件，然后在温度大于或等于100℃的碳存在下进行热处理，从而将氧化物形式的重稀土元素与铁元素分离。', 'VN1201502866', 1390752000, 'VN44644A', 1448380800, 1448380800, NULL, NULL, '越南', NULL, NULL, NULL, NULL, 8, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 43, 3, 0, 0, 0, NULL, NULL, NULL, '2013013571 | 2013013577', 'JP | JP', 1359302400, 11, 11, NULL, NULL, 0, 0, 0, 0, 0, NULL, '897', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 17, NULL, NULL, NULL, 39816, 39818, 39817, 12);
INSERT INTO `os_patent` VALUES (23316, '重希土類元素の回収方法', '回收重稀土元素的方法', 'JP6233321B2', '本発明の課題は、低コストで簡易なリサイクルシステムとして実用化が可能な、少なくとも重希土類元素と鉄族元素を含む処理対象物から重希土類元素を回収する方法を提供することである。その解決手段としての本発明の少なくとも重希土類元素と鉄族元素を含む処理対象物から重希土類元素を回収する方法は、処理対象物に対して酸化処理を行った後、または、処理対象物を酸化処理を行ったR-Fe-B系磁石合金と混合した後、炭素の存在下において1000℃以上の温度で熱処理することで、重希土類元素を酸化物として鉄族元素から分離する工程を少なくとも含んでなることを特徴とする。', '本发明的一个目的是提供一种从过程对象中回收重稀土元素的方法,包括至少重稀土元素和可作为低成本和简单回收系统的实际用途的铁基团。从加工对象中回收重稀土元素的方法,包括至少重稀土元素和铁基元素作为溶液装置在氧化处理到加工靶或待处理的物体后进行。与之混合后基于R-Fe-B的磁体合金对氧化处理进行,在碳存在下在1000℃或更高的温度下热处理,至少将重质稀土元素分离物与铁基元素分离的步骤作为氧化物,其特征在于包括。', 'JP2014558642', 1390752000, 'JP6233321B2', 1511280000, 1485360000, NULL, 1509552000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 22, 3, 0, 0, 0, NULL, NULL, NULL, '2013013571 | 2013013577', 'JP | JP', 1359302400, 11, 11, NULL, NULL, 5, 0, 0, 0, 1, NULL, NULL, NULL, '酒井 英夫', NULL, 'JP2009249674A | JP2012041588A | WO2010098381A1 | WO2012008426A1 | WO2013018710A1', NULL, 'NAKAMOTO Masashi 他5名,Extraction of Rare Earth Elements as Oxides from a Neodymium Magnetic Sludge,Metallurgical and Materials Transactions B,米国,The Minerals, Metals & Materials Society,2012年 6月,Vol.43 No.3,Page.468-476', 1, '\\20220510\\66ef592ed7744579aaa9286aed61138c.png', NULL, NULL, 1, NULL, NULL, 17, NULL, NULL, NULL, 39816, 39818, 39817, 12);
INSERT INTO `os_patent` VALUES (23317, 'Method for recovering heavy rare earth element', '一种回收重稀土元素的方法', 'US10233516B2', 'An object of the present invention is to provide a method for recovering a heavy rare earth element from a workpiece containing at least a heavy rare earth element and an iron group element, which can be put into practical use as a low-cost, simple recycling system. The method for recovering a heavy rare earth element from a workpiece containing at least a heavy rare earth element and an iron group element of the present invention as a means for resolution is characterized by including at least the following step: a workpiece is subjected to an oxidation treatment or mixed with an oxidation-treated R—Fe—B based magnet alloy, and then subjected to a heat treatment in the presence of carbon at a temperature of 1000° C. or more, thereby separating a heavy rare earth element in the form of an oxide from an iron group element.', '本发明的一个目的是提供一种从含有至少重稀土元素和铁族元素的工件中回收重稀土元素的方法，该方法可以作为低成本，简单的回收方法投入实际应用。系统。从含有至少一种重稀土元素和本发明的铁族元素的工件中回收重稀土元素作为拆分手段的方法的特征在于至少包括以下步骤：工件经受氧化处理或与氧化处理的R-Fe-B基磁体合金混合，然后在碳存在下在1000℃或更高的温度下进行热处理，从而分离出重稀土元素。来自铁族元素的氧化物的形式。', 'US14/763340', 1390752000, 'US10233516B2', 1552924800, 1450281600, NULL, 1552924800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 18, 3, 0, 0, 0, NULL, NULL, NULL, '2013013571 | 2013013577', 'JP | JP', 1359302400, 11, 11, NULL, NULL, 8, 0, 0, 0, 5, NULL, '875', NULL, 'SWAIN, MELISSA S', NULL, 'CN102011020A | EP2940163A1 | JP1993170534A | JP2011501635A | JP2012041588A | WO2010098381A1 | WO2012008426A1 | WO2013018710A1', NULL, 'Extended European Search Report dated Sep. 15, 2016 in the corresponding European patent application No. 14743491.4. cited by applicant | First Office Action dated Aug. 31, 2016 in the corresponding Chinese patent application No. 201480006284.3. cited by applicant | International Search Report for International Application No. PCT/JP2014/051696 dated May 13, 2014. cited by applicant | M. Nakamoto, et al.; \"Extraction of Rare Earth Elements as Oxides from a Neodymium Magnetic Sludge;\" Metallurgical and Materials Transactions B; vol. 43; Jun. 2012; pp. 468-476 (9 Sheets)/Cited in International Search Report. cited by applicant | Related co-pending U.S. Appl. No. 14/234,750, filed Jan. 24, 2014. cited by applicant.', 1, '\\20220510\\938f9822709f48d0bf2f783af7363908.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39816, 39818, 39817, 12);
INSERT INTO `os_patent` VALUES (23318, 'Heavy rare earth element recovery method', '重稀土元素回收方法', 'EP2952594B1', 'An object of the present invention is to provide a method for recovering a heavy rare earth element from a workpiece containing at least a heavy rare earth element and an iron group element, which can be put into practical use as a low-cost, simple recycling system. The method for recovering a heavy rare earth element from a workpiece containing at least a heavy rare earth element and an iron group element of the present invention as a means for resolution is characterized by including at least the following step: a workpiece is subjected to an oxidation treatment or mixed with an oxidation-treated R-Fe-B based magnet alloy, and then subjected to a heat treatment in the presence of carbon at a temperature of 1000°C or more, thereby separating a heavy rare earth element in the form of an oxide from an iron group element.', '本发明的一个目的是提供一种从含有至少重稀土元素和铁族元素的工件中回收重稀土元素的方法，该方法可以作为低成本，简单的回收方法投入实际应用。系统。从含有至少一种重稀土元素和本发明的铁族元素的工件中回收重稀土元素作为拆分手段的方法的特征在于至少包括以下步骤：工件经受氧化处理或与氧化处理的R-Fe-B基磁体合金混合，然后在碳存在下在1000℃或更高的温度下进行热处理，从而分离出形式的重稀土元素来自铁族元素的氧化物。', 'EP2014743491', 1390752000, 'EP2952594B1', 1556035200, 1449590400, NULL, 1556035200, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 24, 3, 0, 0, 0, NULL, NULL, NULL, '2013013571 | 2013013577', 'JP | JP', 1359302400, 11, 11, NULL, NULL, 7, 0, 0, 0, 2, NULL, '874', NULL, NULL, NULL, 'EP2738270A1 | EP2940163A1 | JP2009249674A | JP2012041588A | WO2010098381A1 | WO2012008426A1 | WO2013018710A1', NULL, 'MASASHI NAKAMOTO ET AL: \"Extraction of Rare Earth Elements as Oxides from a Neodymium Magnetic Sludge\", METALLURGICAL AND MATERIALS TRANSACTIONS B, SPRINGER-VERLAG, NEW YORK, vol. 43, no. 3, 14 December 2011 (2011-12-14), pages 468-476, XP035055724, ISSN: 1543-1916, DOI: 10.1007/S11663-011-9618-Y | NAKAMOTO MASASHI ET AL.: \'Extraction of Rare Earth Elements as Oxides from a Neodymium Magnetic Sludge\' METALLURGICAL AND MATERIALS TRANSACTIONS B vol. 43, no. 3, June 2012, pages 468 - 476, XP035055724', 1, '\\20220510\\9ad2cecbc1f44d0b8fcc8aa72281a521.png', NULL, NULL, 1, NULL, NULL, 16, NULL, NULL, '有效:DE,BE,FR | 失效:RS,NO,FI,PT,BG,DK,LT,LU,LV,HR,SE,SI,MC,SK,SM,GB,IE,EE,CH,IS,IT,GR,AL,ES,AT,CZ,PL,RO,LI,TR,NL | 未确认:HU,MK,MT,CY', 39816, 39818, 39817, 12);
INSERT INTO `os_patent` VALUES (23319, 'WIEDERHERSTELLUNGSVERFAHREN FÜR SCHWERE SELTENERDELEMENTE', '重稀土元素的恢复过程', 'DE602014045346T2', 'The present invention addresses the issue of providing a method for recovering heavy rare earth elements from a subject to be processed that includes at least heavy rare earth elements and iron group elements, the method being able to be implemented as a low cost and simple recycling system. The method according to the present invention for recovering heavy rare earth elements from a subject to be processed that includes at least heavy rare earth elements and iron group elements is characterised in that the method at least includes a step in which, after the subject to be processed has been subjected to an oxidation treatment, or after the subject to be processed has been mixed with a R-Fe-B magnet alloy that has been subjected to an oxidation treatment, the subject to be processed is heat treated at a temperature of at least 1000°C in the presence of carbon, and thus heavy rare earth elements are separated, as oxides, from the iron group elements.', '本发明致力于提供一种从待处理对象中回收重稀土元素的方法的问题，该方法包括至少重稀土元素和铁族元素，该方法能够实现为低成本且简单的回收系统。根据本发明的用于从包括至少重稀土元素和铁族元素的待处理对象中回收重稀土元素的方法的特征在于，该方法至少包括在对象之后进行的步骤。经过氧化处理，或者待处理的对象与经过氧化处理的R-Fe-B磁体合金混合后，待处理的对象在温度为50℃的温度下进行热处理。在碳存在下至少1000℃，因此重稀土元素作为氧化物从铁族元素中分离出来。', 'DE602014045346', 1390752000, 'DE602014045346T2', 1556035200, 1556035200, NULL, 1556035200, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 43, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '855', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 17, NULL, NULL, NULL, 39819, 39818, 39820, 12);
INSERT INTO `os_patent` VALUES (23320, '粉末充填装置', '粉末充填装置', 'JP5852752B2', '本発明は、均一に近い充填密度で容器に粉末を充填する粉末充填装置を提供することを課題とする。粉末を容器30に供給する開口112を有し、開口112において容器30と連通するように容器30に密閉且つ着脱自在に装着されるホッパ11と、ホッパ11に粉末を供給する粉末供給部12と、ホッパ11と容器30を連通させて密閉した状態で、ホッパ11内に圧縮気体をパルス状に繰り返し供給する気体供給部13と、開口112に設けられた、ホッパ11の中心側よりも側壁側の方が細かいグリッドが形成されたグリッド部材113を備える。ホッパ11から容器30に粉末が落下し易いホッパ11の側壁側のグリッドを細かくすることにより、そこでの粉末の落下を抑え、全体的に充填密度を均一にする。', '本发明的目的是提供一种用于以均匀的填充密度填充容器中的粉末填充装置。 粉末设置有用于将粉末供应到容器30的开口112,并且在开口112和粉末供应单元12处密封并可拆卸地连接到容器30,其将粉末供应到料斗11和粉末供应单元12 ,料斗11和容器30被连通和密封,气体供应单元13以跳跃器11和侧壁侧的脉冲方式重复地提供压缩气体,而不是设置在开口112中的料斗11的中心侧。栅格构件113,其中形成栅格。 通过在料斗11的侧壁侧的细小侧壁侧从料斗11易于掉入容器30的侧壁侧,在那里抑制粉末的下降,并且整体填充密度是均匀的。', 'JP2014559798', 1391356800, 'JP5852752B2', 1454428800, 1454428800, NULL, 1449763200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 3, 0, 0, 0, NULL, NULL, NULL, '2013019891', 'JP', 1359907200, 20, 20, NULL, NULL, 6, 1, 1, 1, 0, NULL, '863', NULL, '西堀 宏之', NULL, 'JP1984032568A | JP1984032568U | JP1999049101A | JP2002160096A | JP2007501171A | JP2010510069A', 'WO2017141815A1', NULL, 1, '\\20220510\\98b763dae0354532bcd6696f1c801645.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39821, 39823, 39822, 22);
INSERT INTO `os_patent` VALUES (23321, '발명의 명칭 소결 자석 제조 장치 및 소결 자석 제조 방법', '烧结磁铁制造装置和烧结磁铁制造方法', 'KR101735981B1', '본 발명은, 소결 자석의 변형을 억제할 수 있는, 프레스레스법(pressless法)을 이용한 소결 자석 제조 장치를 제공하는 것을 과제로 한다. 소결 자석의 원료의 합금 분말을 용기(21)의 캐비티(211)에 충전하는 충전수단(11)과, 캐비티(211)에 충전된 합금 분말에 기계적 압력을 인가하지 않고 자계(磁界)를 인가하는 것에 의해합금 분말을 배향시키는 배향부(13)와, 배향부(13)에 의해 배향시킨 합금 분말에 기계적 압력을 인가하지 않고가열하는 것에 의해 소결시키는 소결부(15)를 가지는 장치로서, 배향부는, 공심 코일(131)과, 공심 코일(131) 내에, 용기(21)를 수용하는 공간을 사이에 두고 공심 코일(131)의 양 개구단 측에 배치된, 강자성체로 이루어지는강자성재(132)를 구비한다. 강자성재(132)에 의해, 공심 코일(131) 내의 자계가 공심 코일(131)의 축에 평행한방향으로 교정(矯正)되고, 그것에 의해 소결 자석의 변형이 억제된다.', '本发明的目的是提供一种使用能够抑制烧结磁体的变形的无压方法的烧结磁体制造装置。用于将烧结磁体的原料的合金粉末填充到容器21的腔211中的充电装置11和用于向填充在腔211中的合金粉末施加磁场而不施加机械压力的充电装置11和烧结部分（15），通过加热烧结而不对由取向部分（13）取向的合金粉末施加机械压力，其中取向部分（13）中，空芯线圈131和内一空芯线圈131，，设置在夹持空间的两开口端部侧，用于容纳在容器21空芯线圈的铁磁材料构成的铁磁性磁材料132（131）和。通过铁磁材料132在与空心线圈131的轴线平行的方向上校正空心线圈131中的磁场，从而抑制烧结磁体的变形。', 'KR1020157021060', 1391356800, 'KR101735981B1', 1494777600, 1442246400, NULL, 1494172800, '韩国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 14, 3, 0, 0, 0, NULL, NULL, NULL, '2013020342', 'JP', 1359993600, 11, 11, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\b53e796bbd7a4d36b67a2c5cd84445e2.png', NULL, NULL, 2, NULL, NULL, 8, NULL, NULL, NULL, 39824, 39826, 39825, 12);
INSERT INTO `os_patent` VALUES (23322, '焼結磁石製造装置及び焼結磁石製造方法', '烧结磁铁制造装置和烧结磁铁制造方法', 'JP6138836B2', '本発明は、焼結磁石の歪みを抑えることができる、プレスレス法を用いた焼結磁石製造装置を提供することを課題とする。焼結磁石の原料の合金粉末を容器21のキャビティ211に充填する充填手段11と、キャビティ211に充填された合金粉末に機械的圧力を印加することなく磁界を印加することにより合金粉末を配向させる配向部13と、配向部13により配向させた合金粉末に機械的圧力を印加することなく加熱することにより焼結させる焼結部15を有する装置であって、配向部が、空芯コイル131と、空芯コイル131内に、容器21を収容する空間を挟んで空芯コイル131の両開口端側に配置された、強磁性体から成る強磁性材132とを備える。強磁性材132により、空芯コイル131内の磁界が空芯コイル131の軸に平行な方向に矯正され、それにより焼結磁石の歪みが抑えられる。', '本发明的目的是提供一种烧结磁体制造装置,其使用较少的方法可以抑制烧结磁体的变形。通过将磁场施加到填充装置11将烧结磁体的腔211施加到容器21的腔211中,将合金粉末施加到容器21的腔211中,并且在不施加磁场的情况下填充在腔211中的合金粉末而不施加磁场。a具有用于通过加热烧结的烧结部分15的装置,而不将机械压力施加到由取向部分13取向的合金粉末,并且取向部分是空气芯线圈131中的空气芯线圈131,是铁磁材料图132所示的是设置在容纳容器21的空间的空气芯线圈131的两个锚固端侧上的铁磁材料。铁磁材料132在平行于空气芯线圈131的轴线的方向上校正空气芯线圈131中的磁场,从而抑制烧结磁体的变形。', 'JP2014560752', 1391356800, 'JP6138836B2', 1496160000, 1485964800, NULL, 1494518400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 3, 0, 0, 0, NULL, NULL, NULL, '2013020342', 'JP', 1359993600, 11, 11, NULL, NULL, 4, 0, 0, 0, 0, NULL, '863', NULL, '小池 秀介', NULL, 'JP1999049101A | JP2006019521A | JP2010272746A | WO2011024936A1', NULL, NULL, 1, '\\20220510\\30850b0498cb4964a0d8375f7a3e7929.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39824, 39826, 39825, 12);
INSERT INTO `os_patent` VALUES (23323, 'Powder-filling system', '粉剂灌装系统', 'US9384890B2', 'A powder-filling system capable of filling a container with powder at an approximately uniform filling density has: a hopper having an opening removably and hermetically closably attached to the container, the hopper communicating with the container at the opening for supplying powder to a container; a powder supplier for supplying powder to the hopper; a gas supplier for repeatedly supplying compressed gas in a pulsed form to the hopper, with the hopper hermetically closably attached to the container; and a sieve member provided at the opening and having a smaller openings in a region near a side wall of the hopper than in its central region. The smaller openings in the region near the side wall of the hopper where the powder more easily falls from the hopper into the container impedes the fall of the powder in that region and improves the overall uniformity in the filling density.', '一种能够以大致均匀的填充密度填充容器的粉末填充系统具有：漏斗，其具有可拆卸且密封地可关闭地连接到容器上的开口，漏斗在开口处与容器连通以向容器供应粉末;粉末供应器，用于向料斗供应粉末;气体供应器，用于将脉冲形式的压缩气体反复供应到料斗，料斗密封地可闭合地连接到容器上;筛子构件设置在开口处，并且在料斗侧壁附近的区域中具有比在其中心区域中更小的开口。在料斗侧壁附近的区域中较小的开口，粉末更容易从料斗落入容器中，阻碍了粉末在该区域的下落，并改善了填充密度的整体均匀性。', 'US14/765130', 1391356800, 'US9384890B2', 1467648000, 1450281600, NULL, 1467648000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 3, 0, 0, 0, NULL, NULL, NULL, '2013019891', 'JP', 1359907200, 20, 20, NULL, NULL, 25, 0, 0, 0, 2, NULL, '880', NULL, 'DAVIS, ROBERT B', NULL, 'CN102893348A | EP0900645A2 | EP0988959A2 | EP2571035A1 | JP1999049101A | JP1999090694A | JP2000328102A | JP2007501171A | JP2008012741A | JP2010510069A | JP3978262B2 | US20070102058A1 | US20100043916A1 | US20120176212A1 | US20130052290A1 | US6155028A | US6475430B1 | US6656416B2 | US7866312B2 | WO2005014397A1 | WO2008060229A1 | WO2011142321A1', NULL, 'Apr. 28, 2014 Written Opinion issued in International Application No. PCT/JP2014/052411. cited by applicant | Jan. 29, 2016 Extended European Search Report issued in European Application No. 14745964.8. cited by applicant.', 1, '\\20220510\\86eed7a668b34727957d44dc82de5413.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39821, 39823, 39822, 22);
INSERT INTO `os_patent` VALUES (23324, '焼結磁石製造方法', '制造烧结磁体的方法', 'JP6227570B2', '本発明は、焼結磁石の割れが発生し難い焼結磁石製造方法を提供することを課題とする。焼結磁石の原料の合金塊を水素解砕法を含む方法で粉砕する粉砕工程と、該粉砕工程で得られた合金粉末をキャビティに充填する充填工程と、該合金粉末に磁界を印加することにより該合金粉末を磁気配向させる配向工程と、該合金粉末を所定の温度履歴で加熱することにより焼結させる焼結工程とを有する方法であって、前記焼結工程において、水素脱離温度よりも高く前記焼結温度以下である所定の加圧維持温度までを大気圧よりも高い圧力の不活性ガス雰囲気中で合金粉末を加熱する。このような不活性ガスによる加圧下で加熱処理を行うことにより、合金粉末に残留する水素ガス分子が急激に合金粉末から脱離することが防止され、焼結磁石の割れを発生し難くすることができる。', '本发明的一个目的是提供一种不易引起烧结磁体的开裂的烧结磁体的制造方法。通过施加磁场到所述腔,通过一个方法包括:在氢粉碎法,填充在破碎步骤到腔体中获得的合金粉末的填充步骤粉碎烧结磁体的合金块的填充工序中,与磁场被施加到合金粉末。具有磁性定向的合金粉末的取向步骤,并通过在规定的温度历史加热所述合金粉末的烧结的烧结步骤的方法,和在烧结工序中,烧结过程中是超过氢解吸温度。该合金粉末是在惰性气体气氛中在压力下加热比大气压高达到等于或小于大气压的预定压力的维持温度。通过由这样的惰性气体压力下进行热处理时,残留在合金粉末的氢的气体分子被迅速地从合金粉末分离,并且难以产生烧结磁体的开裂。可以做到的。', 'JP2014560753', 1391356800, 'JP6227570B2', 1510070400, 1485964800, NULL, 1508428800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 9, 2, 0, 0, 0, NULL, NULL, NULL, '2013020343', 'JP', 1359993600, 10, 10, NULL, NULL, 4, 0, 0, 0, 1, NULL, '863', NULL, '小池 秀介', NULL, 'JP2002246253A | JP2006019521A | JP2006274306A | JP2007234953A', NULL, 'J. M. D. Coey編、「Rare-earth Iron Permanent Magnets」, Clarendon Press, オックスフォード大学出版局発行、1996年、第353頁', 1, '\\20220510\\3a4fae4b4bdc407983696cccfe0a24cb.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39827, 39829, 39828, 10);
INSERT INTO `os_patent` VALUES (23325, 'Manufacturing method of a sintered magnet', '烧结磁铁的制造方法', 'EP3260380B1', 'The present invention addresses the problem of providing a powder-filling system capable of filling a container with powder at an approximately uniform filling density. The system has: a hopper 11 having an opening 112 configured to be attached to the container 30 in a removable and hermetically closable fashion so that the hopper 11 communicates with the container 30 at the opening 112 for supplying powder to a container 30; a powder supplier 12 for supplying powder to the hopper 11; a gas supplier 13 for repeatedly supplying compressed gas in a pulsed form to the hopper 11, with the hopper 11 attached to the container 30 in a hermetically closed fashion; and a sieve member 113 provided at the opening 112 and having a smaller openings in a region near a side wall of the hopper 11 than in its central region. The smaller openings in the region near the side wall of the hopper 11 where the powder more easily falls from the hopper 11 into the container 30 impedes the fall of the powder in that region and improves the overall uniformity in the filling density.', '本发明解决了提供一种粉末填充系统的问题，该粉末填充系统能够以大致均匀的填充密度用粉末填充容器。该系统具有：料斗11，其具有开口112，开口112构造成以可拆卸和气密封闭的方式连接到容器30，使得料斗11在开口112处与容器30连通，用于将粉末供应到容器30;粉末供应器12，用于向料斗11供应粉末;气体供应器13，用于以脉冲形式将压缩气体反复供应到料斗11，料斗11以气密封闭的方式连接到容器30;筛网构件113设置在开口112处，并且在料斗11的侧壁附近的区域中具有比在其中心区域中更小的开口。在料斗11的侧壁附近的区域中较小的开口，粉末更容易从料斗11落入容器30中，阻止粉末在该区域中的下落，并改善填充密度的整体均匀性。', 'EP2017182752', 1391356800, 'EP3260380B1', 1534262400, 1514304000, NULL, 1534262400, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 20, 3, 0, 0, 0, NULL, NULL, NULL, '2013019891 | PCT/JP2014/052411', 'JP | WO', 1359907200, 20, 20, NULL, NULL, 3, 0, 0, 0, 0, NULL, '876', NULL, NULL, NULL, 'EP0988959A2 | JP1999049101A | US6155028A', NULL, NULL, 1, '\\20220510\\a57c5907eb2340febbb3c4772feb00bb.png', NULL, NULL, 2, NULL, NULL, 3, NULL, NULL, '失效:RS,NO,DE,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,HU,SE,SI,MC,SK,SM,GB,IE,EE,CH,MT,IS,IT,GR,AL,ES,AT,CY,CZ,PL,RO,LI,TR,NL | 未确认:MK', 39821, 39823, 39822, 22);
INSERT INTO `os_patent` VALUES (23326, 'Sintered magnet production device and sintered magnet production method', '烧结磁铁生产装置及烧结磁铁生产方法', 'EP2955731B1', 'The present invention addresses the problem of providing a sintered magnet production system using a press-less method capable of minimizing the distortion of a sintered magnet. It is a system including: a filling device 11 for filling a cavity 211 of a container 21 with alloy powder of a material for a sintered magnet; an orienting section 13 for orienting the alloy powder held in the cavity 211 by applying a magnetic field without applying a mechanical pressure to the alloy powder; and a sintering section 15 for sintering the alloy powder oriented by the orienting section 13, by heating the alloy powder without applying a mechanical pressure to the alloy powder. The orienting section includes: an air-core coil 131; and two ferromagnetic members 132 made of a ferromagnetic material to be arranged within the air-core coil 131 at respective open ends of the air-core coil 131 with a space for containing the container 21 in between. The ferromagnetic members 132 adjust the magnetic field within the air-core coil 131 toward a direction parallel to the axis of the air-core coil 131, whereby the distortion of a sintered magnet is minimized.', '本发明解决了使用能够使烧结磁体的变形最小化的无压方法提供烧结磁体生产系统的问题。该系统包括：填充装置11，用于用烧结磁体材料的合金粉末填充容器21的腔211;定向部分13，用于通过施加磁场来定向保持在腔211中的合金粉末，而不对合金粉末施加机械压力;烧结部分15用于烧结由定向部分13取向的合金粉末，通过加热合金粉末而不对合金粉末施加机械压力。定向部分包括：空心线圈131;两个由铁磁材料制成的铁磁构件132在空心线圈131的各个开口端处布置在空心线圈131内，并具有用于容纳其间的容器21的空间。铁磁部件132将空心线圈131内的磁场朝向与空心线圈131的轴线平行的方向调节，从而使烧结磁铁的变形最小化。', 'EP2014748535', 1391356800, 'EP2955731B1', 1565712000, 1450195200, NULL, 1565712000, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 14, 3, 0, 0, 0, NULL, NULL, NULL, '2013020342', 'JP', 1359993600, 11, 11, NULL, NULL, 9, 0, 0, 0, 0, NULL, '876', NULL, NULL, NULL, 'EP2472535A1 | JP1999049101A | JP2006019521A | JP2008263242A | JP2009016849A | JP2010272746A | JP3568651B2 | WO2011024936A1', NULL, NULL, 1, '\\20220510\\9657b7b8fa364305b12574afaef83798.png', NULL, NULL, 2, NULL, NULL, 5, NULL, NULL, '失效:RS,NO,DE,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,SE,SI,MC,SK,SM,GB,IE,EE,CH,IS,IT,GR,AL,ES,AT,CZ,PL,RO,LI,TR,NL | 未确认:HU,MK,MT,CY', 39824, 39826, 39825, 12);
INSERT INTO `os_patent` VALUES (23327, '強磁性合金およびその製造方法', '铁磁合金及其制造方法', 'JP6248689B2', '【課題】構成元素の一部を他の元素に置換することによって生じる低磁気特性に関する問題を解決できる新たな強磁性合金およびその製造方法を提供する。\n\n【解決手段】本発明のR’-Fe-Co系強磁性合金は、六方晶TbCu7型結晶構造と体心正方晶ThMn12型結晶構造との中間的な結晶構造を有する空間群ImmmのR’-Fe-Co系強磁性化合物(R’は1種類以上の希土類元素であって、少なくともYまたはGdを含む)を含むR’-Fe-Co系強磁性合金であって、前記R’-Fe-Co系強磁性化合物は、希土類元素の占有サイトの少なくとも一部とFe原子ペアとの間に長周期の規則置換が生じていない(ランダム置換が生じている)、強磁性化合物である。\n\n【選択図】図7', '本发明的目的在于提供一种新型铁磁性合金及其制造方法，该铁磁性合金能够解决由于用其他元素取代一部分构成元素而导致的低磁特性的问题。\n\n解决方案：本发明的R\'-Fe-Co铁磁合金具有六方晶系TbCu 7晶体结构和体心四方晶系ThMn 12晶体结构R\'-Fe-Co铁磁化合物（R\'是至少一种稀土元素，包括至少Y或Gd），具有空间群Immm，R\'-Fe-Co铁磁合金在基于R\'-Fe-Co的铁磁化合物中，在稀土元素的占据位置的至少一部分与Fe原子对之间不发生长期规则取代（已发生随机取代） ，一种铁磁性化合物。', 'JP2014030779', 1392825600, 'JP6248689B2', 1513699200, 1440604800, NULL, 1512057600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 36, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 10, 2, 0, 0, 2, NULL, NULL, NULL, '井上 健一', NULL, 'EP0453270A2 | JP1989076703A | JP1989298704A | JP1992322405A | JP1994145880A | JP1994172936A | JP1996191006A | JP1998154610A | JP2014047366A | US7048808B2', 'JP6561117B2 | JPWO2016162990A1', 'K.H.J.Buschow(Ed.), Handbook of Magnetic Materials Vol. 6 (1991).; Hong-Shuo LI and J.M.D.Coey, Chap. 1. | S.Sakurada et al., J. Appl. Phys. 79 4611 (1996).', 1, '\\20220510\\71f949a3b3274ba4a4d63ffb478d6881.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, NULL, 39830, 39832, 39831, 2);
INSERT INTO `os_patent` VALUES (23328, '발명의 명칭 RFeB계 소결 자석의 제조 방법 및 이에 의해 제조되는 RFeB계 소결 자석', '一种制造RFeB基烧结磁体和RFeB基烧结磁体的方法', 'KR101780884B1', '본 발명은 주상 입자의 입경이 1㎛ 이하로서 입도분포의 균일성이 높은 RFeB계 소결 자석을 높은 배향도로 제조하는 방법을 제공하는 것을 목적으로 한다. 현미경 화상으로부터 구해진 원 상당 직경에 의한 입도분포의 평균치가 1㎛ 이하인 RFeB계의 결정립이 내부에 형성된 결정립 미세화 조분립을 분쇄하여 얻어지는, 현미경 화상으로부터 원 상당 직경으로 해석된 입도분포의 평균치가 1㎛ 이하의 분말로서, 면적비로 상기 결정립의 90% 이상이 서로 분리된 상태로 있는 RFeB계 합금의 분말을 이용하여 자장에 의해 배향시킨 유형체를 제작하고, 소결하는 RFeB계 소결 자석제조 방법이다. 이 합금분말은 결정립마다 분리되어 있으므로, 높은 배향도의 RFeB계 소결 자석을제조하는 것이 가능해진다.', '本发明的目的是提供这样的方法，其中柱状晶粒的粒径制造RFeB族烧结磁体，其中粒度分布的均匀性高，为1，具有高取向度。粉碎晶粒细化粗尘肋的粒度分布的平均值，其中粒径分布的平均值由显微镜照片节省的圆当量直径的平均值为RFeB组的1㎛或更小在内部并且获得并且被解释为来自显微镜照片的圆当量直径是小于1㎛的粉末并且使用具有彼此分离的状态的RFeB族合金的粉末制成类型通过磁场将晶粒的比例超过90％，并且它与RFeB组烧结磁体的制造方法相对应。这种合金粉末在颗粒处分离。因此，可以制造高取向度的RFeB族烧结磁铁。', 'KR1020157028398', 1394553600, 'KR101780884B1', 1505923200, 1447776000, NULL, 1505404800, '韩国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 29, 6, 0, 0, 0, NULL, NULL, NULL, '2013049618', 'JP', 1363017600, 9, 9, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2010114200A | JP2011216720A | JP2012099852A | JP2013001985A | KR1020120003183A | WO2011145674A1', NULL, NULL, 1, '\\20220510\\ef5eaa85325c475bbddf34b2a70b73e5.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 39833, 39835, 39834, 9);
INSERT INTO `os_patent` VALUES (23329, 'RFeB系焼結磁石の製造方法及びそれにより製造されるRFeB系焼結磁石', '制造RFeB基烧结磁体的方法和通过该方法制造的RFeB基烧结磁体', 'JP6177877B2', '本発明は、主相粒子の粒径が1μm以下であって粒度分布の均一性が高いRFeB系焼結磁石を、高い配向度で製造する方法を提供することを目的とする。顕微鏡画像から求められた円相当径による粒度分布の平均値が1μm以下であるRFeB系の結晶粒が内部に形成された結晶粒微細化粗粉粒を粉砕して得られる、顕微鏡画像から円相当径で解析された粒度分布の平均値が1μm以下の粉末であって、面積比で前記結晶粒の90%以上が互いに分離された状態にあるRFeB系合金の粉末を用いて、磁場によって配向させた有形体を作製し、焼結するRFeB系焼結磁石製造方法。この合金粉末は結晶粒毎に分離されているので、高い配向度のRFeB系焼結磁石を製造することが可能になる。', '本发明的目的是提供一种制造具有高粒径的基于RFEB的烧结磁体的方法,并且具有高取向制造粒度分布的高均匀性。通过研磨在显微镜图像内部的晶粒细化粗粉颗粒的颗粒的平均值,通过研磨颗粒内部的晶粒细化粗粉颗粒而获得1μm或更小的粒度分布的粒度分布的平均值。通过直径分析的尺寸分布是具有1μm或更小的粉末,并且磁场使用RFEB的合金的粉末取向,其中90%或更多的晶粒彼此分离。一种生产方法基于RFEB的烧结磁铁烧结并烧结。由于该合金粉末被分离为每个晶粒,因此可以制造具有高对准程度的基于RFEB的烧结磁体。', 'JP2015505499', 1394553600, 'JP6177877B2', 1502208000, 1487174400, NULL, 1500566400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 17, 6, 0, 0, 0, NULL, NULL, NULL, '2013049618', 'JP', 1363017600, 9, 9, NULL, NULL, 7, 0, 0, 0, 2, NULL, '863', NULL, '小池 秀介', NULL, 'JP2010219499A | JP2010232587A | JP2011216720A | US20100172783A1 | WO2006004014A1 | WO2008032426A1 | WO2014101747A1', NULL, '宇根康裕、佐川眞人、「結晶粒微細化によるNdFeB焼結磁石の高保磁力化」、日本金属学会誌、第76巻、第1号(2012)12-16、特集「永久磁石材料の現状と将来展望」 | 日立金属技報 Vol. 27(2011)pp.34-41「HDDR 磁粉の短時間ホットプレス法で得られたNd-Fe-B 系微結晶磁石の組織と保磁力」', 1, '\\20220510\\449295eabafc451b89db6dcd0eb476be.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 39833, 39835, 39834, 9);
INSERT INTO `os_patent` VALUES (23330, 'RFeB系磁石製造方法、RFeB系磁石及び粒界拡散処理用塗布物', 'RFeB型磁体制造方法，RFeB型磁体和用于晶界扩散处理的涂层材料', 'JP6180507B2', '本発明は、粒界拡散処理の際に塗布物が基材表面から剥離することがなく、保磁力を高めることができるRFeB系磁石の製造方法を提供することを課題とする。Nd及びPrのうちの少なくとも1種である軽希土類元素RLを主たる希土類元素として含有する焼結磁石又は熱間塑性加工磁石であるRL2Fe14B系磁石を製造する方法であって、Dy, Tb及びHoのうちの少なくとも1種から成る重希土類元素RHを含有するRH含有粉末14とシリコーングリース11を混合した塗布物10を、RL2Fe14B系磁石の基材Mの表面に塗布し、基材Mを塗布物10ごと加熱する。シリコーンがシロキサン結合を有するため、加熱時に塗布物10が基材Mの表面から剥離することを防ぐことができる。また、基材Mへの塗布物10の密着性が高まり、それによりRHが基材Mの粒界に移動し易くなるため、保磁力を高めることができる。', '本发明的一个目的是提供一种制造基于RFEB的磁体的方法,该磁体能够在晶界扩散处理时不会从基材的表面上剥离而不剥离基于矫顽力的方法。乳白地球元素r,这是Nd和Pr中的至少一个L烧结磁铁或热塑料工作磁铁,含有主要稀土元素L2Fe.14一种制造B基磁体的方法,由Dy,Tb和Ho中的至少一种组成的重度假村地球元素R.H包含R.H与粉末14和硅氧烷润滑脂11混合的涂覆产品10是L2Fe.14它施加到基于B基磁体的基部M的表面,并且基板M与涂层10一起加热。由于有机硅具有硅氧烷键,因此可以防止涂层10从加热期间从基板M的表面剥离。另外,涂层10与基板M的粘附增加,从而增加H因此,由于变得容易移动到基板M的晶界,因此可以增强矫顽力。', 'JP2015506727', 1394640000, 'JP6180507B2', 1502812800, 1487174400, NULL, 1501171200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 3, 0, 0, 0, NULL, NULL, NULL, '2013055737', 'JP', 1363536000, 16, 16, NULL, NULL, 7, 0, 0, 0, 0, NULL, '863', NULL, '小池 秀介', NULL, 'JP1999329810A | JP2006019521A | JP2006303433A | JP2007258455A | JP2009302318A | WO2011122667A1 | WO2011136223A1', NULL, NULL, 1, '\\20220510\\e292b583a02345b3a6535353ed599f59.png', NULL, NULL, 1, NULL, NULL, 13, NULL, NULL, NULL, 39836, 39838, 39837, 17);
INSERT INTO `os_patent` VALUES (23331, '발명의 명칭 RFeB계 소결자석 제조 방법 및 RFeB계 소결자석', '发明名称基于RFeB的烧结磁体的制造方法和基于RFeB的烧结磁体', 'KR101735988B1', '본 발명은, 입계 확산법을 이용하여 제작된 자기특성이 높은 RFeB계 소결 자석에 있어서, 내식성에 뛰어나면서에너지 손실이 적은 RFeB계 소결 자석의 제조 방법을 제공하는 것을 과제로 한다. Nd 및 Pr 중 적어도 1종의 경희토류 원소RL을 주된 희토류 원소R로서 함유하는 R2Fe14B를 주상으로 하는 결정립으로 이루어진 RFeB계 소결체', '本发明的目的在于提供一种RFeB组制造烧结磁体的方法，其中能量损失小于其中使用晶界扩散法制造的磁特性高且耐腐蚀性优异的RFeB组烧结磁体。混合含氧原子的有机化合物的糊剂（12）涂覆在RFeB族烧结体（11）的表面上，该烧结体由含有至少一种轻稀土元素RL的晶粒指定的R 2 Fe 14 B组成。在Nd和Pr中，作为金属粉末中主要作为柱状的稀土材料R，含有Dy中至少一种重稀土元素RH，Ho和Tb以及分子结构和在接触晶界扩散过程的状态下对表面进行加热膏（12）。由此，在表面形成含有轻稀土元素R L的氧化物的保护层（13）。虽然该保护层（13）的耐腐蚀性优异，但为了抑制使用中的过电流发生，电阻率作为高度有助于写入能量损失。', 'KR1020157027968', 1394640000, 'KR101735988B1', 1494777600, 1448294400, NULL, 1494172800, '韩国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 9, 2, 0, 0, 0, NULL, NULL, NULL, '2013055740', 'JP', 1363536000, 10, 10, NULL, NULL, 0, 1, 1, 1, 0, NULL, NULL, NULL, NULL, NULL, NULL, 'CN109695015A', NULL, 1, '\\20220510\\4f9f11eed0194cd4899b9d34bbf34c7c.png', NULL, NULL, 2, NULL, NULL, 2, NULL, NULL, NULL, 39839, 39841, 39840, 10);
INSERT INTO `os_patent` VALUES (23332, 'Rfeb-based magnet production method, and coating material for grain boundary diffusion process', '基于Rfeb的磁体制造方法和用于晶界扩散工艺的涂层材料', 'EP2977998B1', 'The present invention addresses the problem of providing a method for producing an RFeB system magnet with high coercivity by preventing a coating material from peeling off the surface of a base material during a grain boundary diffusion treatment. Provided is a method for producing an RL2Fe14B system magnet which is a sintered magnet or a hot-deformed magnet containing, as the main rare-earth element, a light rare-earth element RL which is at least one of the two elements ofNd and Pr, the method including the steps of: applying, to a surface of a base material M of the RL2Fe14B system magnet, a coating material 10 prepared by mixing a silicone grease 11 and an RH-containing powder 14 containing a heavy rare-earth element RH composed of at least one element selected from the group of Dy, Tb and Ho; and heating the base material M together with the coating material. The silicone having a siloxane bond prevents the coating material 10 from peeling off the surface of the base material M during the heating process. The improved adhesion of the coating material 10 to the base material M facilitates transfer of RH into the grain boundaries of the base material M, whereby the coercivity is increased.', '本发明通过防止涂料在晶界扩散处理过程中从基材表面剥离来解决提供一种制造具有高矫顽力的RFeB系磁铁的方法的问题。本发明提供一种RL2Fe14B系磁铁的制造方法，该磁铁是烧结磁铁或热变形磁铁，其含有作为主要稀土元素的轻稀土元素RL，该稀土元素RL是Nd和Pr的两种元素中的至少一种。该方法包括以下步骤：向RL2Fe14B系磁体的基材M的表面施加通过混合硅脂11和含有重稀土元素RH的含RH粉末14制备的涂料10。由选自Dy，Tb和Ho的至少一种元素组成;并且将基材M与涂料一起加热。具有硅氧烷键的硅氧烷防止涂层材料10在加热过程中从基材M的表面上剥落。涂层材料10对基材M的改善的粘附性有利于RH转移到基材M的晶界中，从而提高矫顽力。', 'EP2014768462', 1394640000, 'EP2977998B1', 1537286400, 1453824000, NULL, 1537286400, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 21, 3, 0, 0, 0, NULL, NULL, NULL, '2013055737', 'JP', 1363536000, 16, 16, NULL, NULL, 15, 0, 0, 0, 0, NULL, '876', NULL, NULL, NULL, 'DE102014113865A1 | EP1643513A1 | EP1970924A1 | EP2565885A1 | EP2772926A1 | EP2879142A1 | JP1990065103A | JP1999329810A | JP2006019521A | JP2006303433A | JP2007258455A | JP2009302318A | US20090297699A1 | WO2011122667A1 | WO2011136223A1', NULL, NULL, 1, '\\20220510\\0cf008351f7f4fd1afef735164011e9c.png', NULL, NULL, 2, NULL, NULL, 9, NULL, NULL, '失效:RS,NO,DE,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,HU,SE,SI,MC,SK,SM,GB,IE,EE,CH,MT,IS,IT,GR,AL,ES,AT,CY,CZ,PL,RO,LI,TR,NL | 未确认:MK', 39836, 39838, 39837, 17);
INSERT INTO `os_patent` VALUES (23333, 'RFeB system magnet production method, RFeB system magnet, and coating material for grain boundary diffusion treatment', 'RFeB系磁铁制造方法、RFeB系磁铁及晶界扩散处理用涂层材料', 'US10475561B2', 'A method for producing an RFeB system magnet with high coercivity by preventing a coating material from peeling off the surface of a base material during a grain boundary diffusion treatment is provided. A method for producing an RL2Fe14B system magnet which is a sintered magnet or a hot-deformed magnet containing, as the main rare-earth element, a light rare-earth element RL which is at least one of the two elements of Nd and Pr, the method including: applying, to a surface of a base material M of the RL2Fe14B system magnet, a coating material prepared by mixing a silicone grease and an RH-containing powder containing a heavy rare-earth element RH composed of at least one element selected from the group of Dy, Tb and Ho; and heating the base material together with the coating material. Improved coating and base materials adhesion facilitates transfer of RH into base material grain boundaries.', '本发明提供一种通过防止在晶界扩散处理中涂料从基材的表面剥离而制造高矫顽力的RFeB系磁铁的方法。 R大号2Fe14B系磁体的制造方法，该磁体是以轻稀土元素R大号作为主要稀土元素的烧结磁体或热变形磁体。作为Nd和Pr这两种元素中的至少一种的方法，该方法包括：在R大号2Fe14B系统磁体的基材M的表面上涂覆一种通过将有机硅润滑脂和含有RH的粉末混合，该粉末含有重稀土元素RH，该稀土元素选自Dy，Tb和Ho中的至少一种元素；然后将基材和涂料一起加热。改善涂层和基材的附着力有助于将RH转移到基材晶粒边界中。', 'US14/777638', 1394640000, 'US10475561B2', 1573488000, 1476288000, NULL, 1573488000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 3, 0, 0, 0, NULL, NULL, NULL, '2013055737', 'JP', 1363536000, 16, 16, NULL, NULL, 46, 0, 0, 0, 10, NULL, '880', NULL, 'GREGORIO, GUINEVER S', NULL, 'BRPI0600210A2 | CN100520992C | CN101620904A | CN101911227A | CN102859621A | CN103098151A | CN104488048A | CN1838342A | DE102014113865A1 | EP1643513A1 | EP1705671A2 | EP1970924A1 | EP2267730A2 | EP2555207A1 | EP2565885A1 | EP2772926A1 | EP2879142A1 | JP1990065103A | JP1999329810A | JP2006303433A | JP2007200142A | JP2008079317A | JP2008120861A | JP2009089220A | JP2009302318A | JP2011134740A | JP2011241171A | JP2012188832A | JP2013091373A | KR1020060102480A | RU2006103684A | RU2377680C2 | US20060213583A1 | US20060213584A1 | US20090297699A1 | US20130026870A1 | US20140271323A1 | US20150221423A1 | WO2011122667A1 | WO2011136223A1', NULL, 'Apr. 10, 2019 Office Action issued in Chinese Patent Application No. 2018-10001024.7. cited by applicant. | Feb. 19, 2016 Search Report issued in European Patent Application No. 14768462.5. cited by applicant | Jan. 10, 2017 Office Action issued in Japanese Patent Application No. 2015-506727. cited by applicant | Jul. 24, 2018 Office Action issued in Japanese Patent Application No. 2017-139055. | Jun. 20, 2017 Office Action issued in Chinese Patent Application No. 201480016944.6. cited by applicant | Jun. 24, 2014 International Search Report issued in International Patent Application No. PCT/JP2014/056702. cited by applicant | Jun. 24, 2014 Written Opinion issued in International Patent Application No. PCT/JP2014/056702. | Mar. 22, 2017 Office Action issued in European Patent Application No. 14768462.5. cited by applicant | Oct. 26, 2016 Office Action issued in Chinese Patent Application No. 201480016944.6. | Oct. 6, 2016 Office Action issued in Korean Patent Application No. 10-2015-7027685. cited by applicant', 1, '\\20220510\\16d7f9088f3846a4ba1295e6a1c20606.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 39836, 39838, 39837, 17);
INSERT INTO `os_patent` VALUES (23334, 'R-T-B系焼結磁石', 'R-T-B系焼结磁石', 'JP6288076B2', 'Dyを使用せずに、高いBrと高いHcJを有するR-T-B系焼結磁石を提供する。\n\nNd2Fe14B型化合物を主相とし、前記主相と、二つの主相間に存在する第一の粒界と、三つ以上の主相間に存在する第二の粒界とを有するR-T-B系焼結磁石であって、R:29.0質量%以上31.5質量%以下、B:0.86質量%以上0.90質量%以下、Ga:0.4質量%以上0.6質量%以下、Al:0.5質量%以下(0質量%を含む)、残部Tおよび不可避的不純物からなるR-T-B系焼結磁石。', '提供一种不使用Dy而具有高B[R和高H J 的基于R-T-B的烧结磁体。\n\n Nd2Fe14B型化合物作为主相，主相，存在于两个主相之间的第一晶界和存在于三个或更多个主相之间的第二晶界 R：29.0质量％以上31.5质量％以下，B：0.86质量％以上0.90质量％以下，Ga：0.4质量％以上0.6质量％以下，Al：0.5质量％以下的RTB系烧结磁铁。 基于RTB的烧结磁体，其由（包括0质量％），余量T和不可避免的杂质组成。', 'JP2015508655', 1395849600, 'JP6288076B2', 1520352000, 1487174400, NULL, 1518710400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 4, 0, 0, 0, NULL, NULL, NULL, '2013071834', 'JP', 1364486400, 11, 11, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '五貫 昭一', NULL, 'JP2009231391A | JP2011129768A | JP2014209546A | JP6079633B2 | WO2013008756A1', NULL, NULL, 1, '\\20220510\\b2b22a5d407e4a3590826f07b0586faa.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39842, 39844, 39843, 12);
INSERT INTO `os_patent` VALUES (23335, 'R-T-B系焼結磁石', 'R-T-B系焼结磁石', 'JP6319299B2', 'B濃度の低下によるBrの大幅な低下およびHcJが近年の要求を満足するには不十分であるという問題を解決し、Dyを使用せずに、高いBrと高いHcJを有するR-T-B系焼結磁石を提供する。\n\n Nd2Fe14B型化合物を主相とし、前記主相と、二つの主相間に存在する第一の粒界と、三つ以上の主相間に存在する第二の粒界とを有するR-T-B系焼結磁石であって、厚みが5nm以上30nm以下の前記第一の粒界が存在しているR-T-B系焼結磁石。', 'b由于B浓度的降低br显着减少和hcJ解决问题,即不足以满足最近的要求,而不使用Dyr和高H.cJ提供基于R-T-B基烧结磁体。\n\nn2Fe.14B型化合物是主阶段,并且在两个主要相之间存在的主相和第一晶界,以及具有在三个或更多个主要阶段之间存在的第二晶域的RTB的烧结磁体因此RTB-基于烧结磁体,其中厚度为5nm以上且30nm或更小的第一晶界。', 'JP2015508652', 1395849600, 'JP6319299B2', 1525795200, 1487174400, NULL, 1523548800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 4, 0, 0, 0, NULL, NULL, NULL, '2013071833', 'JP', 1364486400, 10, 10, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, '五貫 昭一', NULL, 'JP2011082365A | JP2012028704A | JP2014209546A | WO2013008756A1', NULL, NULL, 1, '\\20220510\\a54255f818924513976e25e587232a89.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 39845, 39847, 39846, 11);
INSERT INTO `os_patent` VALUES (23336, 'R-t-b-based sintered magnet', 'R-t-b基烧结磁铁', 'EP2980808B1', 'To provide an R-T-B based sintered magnet having high B r and high H cJ without using Dy by solving a problem that a significant reduction in B r due to a decrease in B concentration and H cJ are insufficient to satisfy recent requirements. Disclosed is an R-T-B based sintered magnet which includes an Nd 2 Fe 14 B type compound as a main phase, and comprises the main phase, a first grain boundary phase located between two main phases, and a second grain boundary phase located between three or more main phases, wherein the first grain boundary phase having a thickness of 5 nm or more and 30 nm or less is present.', '通过解决由于B浓度和H cJ的降低导致的B r显着降低不足以满足最近要求的问题，提供不使用Dy而具有高B r和高H cJ的R-T-B基烧结磁体。本发明公开了一种RTB基烧结磁体，其包含Nd 2 Fe 14 B型化合物作为主相，并且包括主相，位于两个主相之间的第一晶界相和位于三个或更多个之间的第二晶界相。主相，其中存在厚度为5nm或更大且30nm或更小的第一晶界相。', 'EP2014776462', 1395849600, 'EP2980808B1', 1528819200, 1454428800, NULL, 1528819200, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 20, 4, 0, 0, 0, NULL, NULL, NULL, '2013071833', 'JP', 1364486400, 10, 10, NULL, NULL, 5, 0, 0, 0, 1, NULL, '852', NULL, NULL, NULL, 'JP2009231391A | JP2011082365A | US20130069746A1 | WO2012102497A2 | WO2013008756A1', NULL, 'None', 1, '\\20220510\\bc65817248ec4698a5d2dde45e2367f3.png', NULL, NULL, 1, NULL, NULL, 11, NULL, NULL, '有效:DE,FR,SK,GB,IT,ES,CZ,TR | 失效:RS,NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,HU,SE,SI,MC,SM,IE,EE,CH,MT,IS,GR,AL,AT,CY,PL,RO,LI,NL | 未确认:MK', 39845, 39847, 39846, 11);
INSERT INTO `os_patent` VALUES (23337, 'R-T-B-BASED SINTERED MAGNET', '基于r-t-b的烧结磁体', 'ES2674370T3', 'To provide an R-T-B based sintered magnet having high B r and high H cJ without using Dy by solving a problem that a significant reduction in B r due to a decrease in B concentration and H cJ are insufficient to satisfy recent requirements. Disclosed is an R-T-B based sintered magnet which includes an Nd 2 Fe 14 B type compound as a main phase, and comprises the main phase, a first grain boundary phase located between two main phases, and a second grain boundary phase located between three or more main phases, wherein the first grain boundary phase having a thickness of 5 nm or more and 30 nm or less is present.', '通过解决由于B浓度和H cJ的降低而导致的B r的显着降低不足以满足最近的需求的问题,从而提供一种不使用Dy而具有高B r和高H cJ的R-T-B基烧结磁体。 公开了一种RTB系烧结磁体,其包括Nd 2 Fe 14 B型化合物作为主相,并且包括主相,位于两个主相之间的第一晶界相和位于三个或更多个之间的第二晶界相。 主相,其中存在厚度为5nm以上且30nm以下的第一晶界相。', 'ES2014776462', 1395849600, 'ES2674370T3', 1530201600, 1530201600, NULL, 1530201600, '西班牙', NULL, NULL, NULL, NULL, 8, 4, NULL, NULL, NULL, NULL, 'T3', NULL, NULL, 17, 4, 0, 0, 0, NULL, NULL, NULL, '2013071833', 'JP', 1364486400, 10, 10, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\f32c41238bb341609c4f0ef40193ad2c.png', NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 39845, 39847, 39846, 11);
INSERT INTO `os_patent` VALUES (23338, 'R-t-b-based sintered magnet', 'R-t-b基烧结磁铁', 'EP2985768B8', 'To provide an R-T-B based sintered magnet having high Br and high HcJ without using Dy. Disclosed is an R-T-B based sintered magnet which includes an Nd2Fe14B type compound as a main phase, and comprises the main phase, a first grain boundary phase located between two main phases, and a second grain boundary phase located between three or more main phases, wherein the composition of the R-T-B based sintered magnet comprises: R: 29.0% by mass or more and 31.5% by mass or less, B: 0.86% by mass or more and 0.4% by mass or less, Ga: 0.4% by mass or more and 0.6% by mass or less, Al: 0.5% by mass or less (including 0% by mass), and balance being T and inevitable impurities.', '提供不使用Dy的具有高Br和高HcJ的R-T-B基烧结磁体。本发明公开了一种RTB基烧结磁体，其包含Nd2Fe14B型化合物作为主相，并包含主相，位于两个主相之间的第一晶界相和位于三个或更多个主相之间的第二晶界相，其中RTB系烧结磁铁的组成包含：R：29.0质量％以上且31.5质量％以下，B：0.86质量％以上且0.4质量％以下，Ga：0.4质量％以上Al：0.5质量％以下，Al：0.5质量％以下（包含0质量％），余量为T和不可避免的杂质。', 'EP2014776191', 1395849600, 'EP2985768B8', 1572969600, 1455638400, NULL, 1572969600, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B8', NULL, NULL, 0, 4, 0, 0, 0, NULL, NULL, NULL, '2013071834', 'JP', 1364486400, 11, 11, NULL, NULL, 6, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, 'EP0651401A1 | JP1988018603A | JP2009231391A | US5472525A | WO2012002060A1 | WO2013054842A1', NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, '有效:DE,FR,SK,GB,IT,ES,CZ,TR | 失效:RS,NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,SE,SI,MC,SM,IE,EE,CH,IS,GR,AL,AT,PL,RO,LI,NL | 未确认:HU,MK,MT,CY', 39842, 39844, 39843, 12);
INSERT INTO `os_patent` VALUES (23339, 'Imán sinterizado a base de R-T-B', 'R-T-B基烧结磁铁', 'ES2749754T3', 'Un imán sinterizado a base de R-T-B que incluye un compuesto de tipo Nd2Fe14B como fase principal que comprende: la fase principal, una primera fase de límite de grano ubicada entre dos fases principales, y una segunda fase de límite de grano ubicada entre tres o más fases principales, consistiendo la composición del imán sinterizado a base de R-T-B en: R: el 29,0% en masa o más y el 31,5% en masa o menos, siendo R Nd y/o Pr, B: el 0,86% en masa o más y el 0,90% en masa o menos, Ga: el 0,4% en masa o más y el 0,6% en masa o menos, Al: el 0,5% en masa o menos, incluyendo el 0% en masa, y siendo el resto T, siendo T un elemento de metal de transición e incluye inevitablemente Fe; e impurezas inevitables, incluyendo el imán sinterizado a base de R-T-B además opcionalmente: Cu: el 0,05% en masa o más y el 0,20% en masa o menos.', '基于RTB的烧结磁体，其包括Nd 2 Fe 14 B型化合物作为主相，其包括：主相，位于两个主相之间的第一晶界相和位于三个或更多个之间的第二晶界相。 在主相中，RTB系烧结磁铁的组成为：R：29.0质量％以上且31.5质量％以下，R Nd和/或Pr，B：0，  86质量％以上且0.90质量％以下，Ga：0.4质量％以上且0.6质量％以下，Al：0.5质量％以下 的含量为0质量％，其余为T，T为过渡金属元素，不可避免地含有Fe。 另外，R-T-B系烧结磁铁还含有不可避免的杂质：Cu：0.05质量％以上且0.20质量％以下。', 'ES2014776191', 1395849600, 'ES2749754T3', 1584892800, 1584892800, NULL, 1584892800, '西班牙', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T3', NULL, NULL, 13, 4, 0, 0, 0, NULL, NULL, NULL, '2013071834', 'JP', 1364486400, 11, 11, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\33d52d7a863040d3bc18ed0b390ffcb3.png', NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 39842, 39844, 39843, 12);
INSERT INTO `os_patent` VALUES (23340, 'GESINTERTER MAGNET AUF R-T-B-BASIS', 'R-T-B基础上的烧结磁铁', 'DE602014054257T2', 'The present invention provides an R-T-B-based sintered magnet that is high in Br and HcJ without using Dy. The R-T-B-based sintered magnet has a Nd2Fe14B-type compound as a main phase, and includes the main phase, a first grain boundary present between two main phases, and a second grain boundary present between three or more main phases, the R-T-B-based sintered magnet comprising 29.0 to 31.5 mass% R, 0.86 to 0.90 mass% B, 0.4 to 0.6 mass% Ga, and 0.5 mass% or less of Al (including 0 mass%), the balance being made up of T and unavoidable impurities.', '本发明提供不使用Dy而使Br和HcJ高的R-T-B系烧结磁铁。RTB系烧结磁铁以Nd 2 Fe 14 B型化合物为主相，包含主相，存在于两个主相之间的第一晶界和存在于三个以上的主相之间的第二晶界，RTB系包含29.0-31.5质量％的R，0.86-0.90质量％的B，0.4-0.6质量％的Ga和0.5质量％或更少的Al（包括0质量％）的烧结磁体，余量由T和不可避免的杂质构成。', 'DE602014054257', 1395849600, 'DE602014054257T2', 1569340800, 1569340800, NULL, 1569340800, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 23, 4, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39848, 39844, 39849, 12);
INSERT INTO `os_patent` VALUES (23341, 'GESINTERTER MAGNET AUF R-T-B-BASIS', 'R-T-B基础上的烧结磁铁', 'DE602014027039T2', 'Provided is an R-T-B-based sintered magnet that has a high Br and a high HcJ without using Dy so as to solve the problems that a lowering in B concentration causes a large lowering in Br and HcJ is insufficient to satisfy the recent requirements. The R-T-B-based sintered magnet comprises an Nd2Fe14B type compound as a main phase and has the aforesaid main phase, a first grain boundary positioned between two main phases and a second grain boundary positioned among three or more main phases, wherein the first grain boundary having a thickness of 5-30 nm inclusive is present.', '本发明提供一种R-T-B系烧结磁铁，其在不使用Dy的情况下具有高Br和高HcJ，从而解决了B浓度降低导致Br大幅降低的问题，并且HcJ不足以满足最近的要求。 RTB基烧结磁体包含Nd2Fe14B型化合物作为主相并具有上述主相，位于两个主相之间的第一晶界和位于三个或更多个主相之间的第二晶界，其中第一晶界具有存在5-30nm的厚度。', 'DE602014027039', 1395849600, 'DE602014027039T2', 1528819200, 1528819200, NULL, 1528819200, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 28, 4, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39850, 39847, 39851, 11);
INSERT INTO `os_patent` VALUES (23342, '希土類焼結磁石の面取り方法', '稀土烧结磁体的倒角方法', 'JP6213343B2', '(修正有)\n\n【課題】面取りを能率的に行うことができる希土類焼結磁石の面取り方法を提供する。\n\n【解決手段】希土類焼結磁石3の面取り方法は、回転するブラシ2と希土類焼結磁石3の角部または縁部とを接触させる工程と、ブラシ2と焼結磁石3との接触部においてクーラント11を供給する工程と包含する。ブラシ毛材は、砥粒と、砥粒とは異なる金属粒とを含む樹脂から構成された複数の弾性毛材を有しており、砥粒は、ダイヤモンド砥粒であり、金属粒は、ステンレス鋼、鉄、銅、真鍮およびアルミニウムからなる群から選択される少なくとも1つの金属またはその合金からなる。\n\n【選択図】図1', '(纠正)\n\n本发明的一个目的是提供一种能够有效地执行倒角的稀土烧结磁体的倒角方法。\n\n稀土烧结磁体3的倒角方法接触旋转刷2和稀土烧结磁体3的角落或边缘,以及用刷子2和烧结磁体3处的接触部分处的冷却剂包括11以提供11。刷毛材料具有多个弹性发型,这些弹性头发由树脂组成,包括磨粒和不同于磨粒的金属颗粒,磨粒是金刚石磨料,金属颗粒是不锈钢,它由至少一种选自组成的金属或合金组成钢铁,铁,铜,黄铜和铝。\n\n图1', 'JP2014068863', 1395936000, 'JP6213343B2', 1508256000, 1415203200, NULL, 1506614400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 1, 0, 0, 0, NULL, NULL, NULL, '2013072009', 'JP', 1364486400, 2, 2, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '亀田 貴志', NULL, 'JP1980065080A | JP2002120133A | JP2002187073A | JP2003181769A | JP2005199364A | JP2010274332A', NULL, NULL, 1, '\\20220510\\2892ae6908f9452a8ab601e492c6b8dd.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39852, 39854, 39853, 2);
INSERT INTO `os_patent` VALUES (23343, '希土類元素の回収方法', '回收稀土元素的方法', 'JP6264195B2', '【課題】 低コストで簡易なリサイクルシステムとして実用化が可能な、少なくとも希土類元素と鉄族元素を含む処理対象物から希土類元素を回収する方法を提供すること。\n\n【解決手段】 処理対象物に対して酸化処理を行った後、処理環境を炭素の存在下に移して熱処理する際、次の2つの条件、(1)酸化処理を行った処理対象物に含まれるホウ素モル濃度が希土類元素のモル濃度の0〜0.50倍であること、(2)950℃〜1300℃の温度で熱処理すること、を満足させて熱処理を行い、得られる熱処理物を水と反応させることで、希土類元素の酸化物を粉末として回収することを特徴とする。\n\n【選択図】 図1', '要解决的问题：提供一种稀土元素的回收方法，作为一种低成本和简单的循环系统实际上是可行的，并从含有至少稀土元素和铁族元素的待处理物体中回收稀土元素。解决方案：稀土元素的回收方法包括对待处理物体进行氧化处理，将处理环境改为包括碳的存在，在以下条件下进行热处理：（​​1）摩尔浓度为氧化处理物中含有的硼为稀土元素的摩尔浓度的0~0.50倍; （2）热处理温度为950-1,300℃，并使得到的热处理产物与水反应，回收稀土元素氧化物粉末。', 'JP2014109600', 1401120000, 'JP6264195B2', 1516723200, 1450022400, NULL, 1515081600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 11, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '酒井 英夫', NULL, 'JP2004091811A | JP2005002463A | JP2009249674A | JP2012041588A | WO2010098381A1 | WO2013018710A1', NULL, NULL, 1, '\\20220510\\94078a14d09d45ac872ea7c80f7fb9d0.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39855, 39857, 39856, 11);
INSERT INTO `os_patent` VALUES (23344, 'PHƯƠNG PHÁP THU HỒI NGUYÊN TỐ ĐẤT HIẾM', '稀有金属回收方法', 'VN46427A', 'Sáng chế đề cập đến phương pháp thu hồi nguyên tố đất hiếm từ phôi gia công bao gồm bước cho phôi gia công chứa ít nhất nguyên tố đất hiếm và nguyên tố nhóm sắt được xử lý oxy hóa. Phương pháp theo sáng chế khác biệt ở chỗ, trong quá trình xử lý nhiệt phôi gia công đã được xử lý oxy hóa với sự có mặt của cacbon, khi phôi gia công đã xử lý oxy hóa được đặt vào đồ chứa xử lý, cacbon được cho vào giữa phôi gia công đã được xử lý oxy hóa và mặt đáy của đồ chứa, và quá trình xử lý nhiệt được thực hiện trong môi trường khí trơ hoặc trong chân không ở nhiệt độ 1300oC hoặc cao hơn.', '本发明涉及从工件中回收稀土元素的方法，包括含有至少稀土元素和氧化铁族元素的工件的步骤。根据本发明的方法的不同之处在于，在热处理过程中，当氧化处理的工件放置在处理容器中时，工件已被氧化成碳的存在，碳在氧化处理过的工件和容器底部之间加入热处理，热处理在惰性气体气氛或真空中在1300℃或更高的温度下进行。', 'VN1201504990', 1401292800, 'VN46427A', 1458835200, 1458835200, NULL, NULL, '越南', NULL, NULL, NULL, NULL, 8, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 28, 2, 0, 0, 0, NULL, NULL, NULL, '2013115234', 'JP', 1369929600, 10, 10, NULL, NULL, 0, 0, 0, 0, 0, NULL, '897', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 39858, 39860, 39859, 10);
INSERT INTO `os_patent` VALUES (23345, '希土類元素の回収方法', '回收稀土元素的方法', 'JP6327250B2', '本発明の課題は、少なくとも希土類元素と鉄族元素を含む処理対象物から効率的に希土類元素を回収することができるとともに、処理容器をその消耗や損傷を抑制して長期に亘って繰り返し用いることができる方法を提供することである。その解決手段としての本発明の方法は、酸化処理を行った処理対象物を炭素の存在下で熱処理するにあたり、酸化処理を行った処理対象物を処理容器に収容する際、酸化処理を行った処理対象物と容器底面との間に炭素物質を介在させること、そして不活性ガス雰囲気中または真空中において1300℃以上の温度で熱処理することを特徴とする。', '本发明的目的可以通过包括至少稀土元素和铁组元件的加工对象有效地回收稀土元素,并通过抑制消耗和损坏来使用处理容器长时间使用。提供可以完成的方法。在本发明的方法作为该溶液的溶液中,当在碳氧化处理的热处理中的加工容器中容纳在加工容器中进行氧化处理时,进行氧化处理。它是其特征在于,碳材料在容器的加工物体和底表面之间插入,并在1300℃或更高的温度下在惰性气体气氛中或真空中的热处理。', 'JP2015519938', 1401292800, 'JP6327250B2', 1527004800, 1487779200, NULL, 1524758400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 2, 0, 0, 0, NULL, NULL, NULL, '2013115234', 'JP', 1369929600, 10, 10, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, '坂本 薫昭', NULL, 'JP1993202435A | JP2009249674A | WO2010098381A1 | WO2013018710A1', NULL, NULL, 1, '\\20220510\\50058609ff1e499f859b14d76f4e9f2c.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 39858, 39860, 39859, 10);
INSERT INTO `os_patent` VALUES (23346, 'Method for recovering rare earth element', '回收稀土元素的方法', 'US10023938B2', 'An object of the present invention is to provide a method according to which a rare earth element can be efficiently recovered from a workpiece containing at least a rare earth element and an iron group element, and also wear and damage to the treatment container can be suppressed, allowing the container to be used repeatedly for a long period of time. The method of the present invention as a means for resolution is characterized in that in the heat treatment of an oxidation-treated workpiece in the presence of carbon, when the oxidation-treated workpiece is placed in a treatment container, a carbon substance is interposed between the oxidation-treated workpiece and the bottom surface of the container, and the heat treatment is performed in an inert gas atmosphere or in vacuum at a temperature of 1300° C. or more.', '本发明的目的是提供一种方法，根据该方法可以有效地从含有至少稀土元素和铁族元素的工件中回收稀土元素，并且还可以抑制对处理容器的磨损和损坏。 ，允许容器长时间反复使用。作为分辨手段的本发明的方法的特征在于，在碳存在下对氧化处理的工件进行热处理时，当将氧化处理的工件放置在处理容器中时，在它们之间插入碳物质。经氧化处理的工件和容器的底面，热处理在惰性气体气氛中或在1300℃或更高的温度下在真空中进行。', 'US14/893611', 1401292800, 'US10023938B2', 1531756800, 1461168000, NULL, 1531756800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 10, 2, 0, 0, 0, NULL, NULL, NULL, '2013115234', 'JP', 1369929600, 10, 10, NULL, NULL, 14, 0, 0, 0, 7, NULL, '875', NULL, 'WYSZOMIERSKI, GEORGE', 'MCGUTHRY BANKS, TIMA M', 'CN101509077A | CN102978401A | EP2940163A1 | EP2952594A1 | JP1993202435A | JP1998310830A | US20080298425A1 | US20150344991A1 | US2789152A | US3378619A | WO2010098381A1 | WO2013018710A1', NULL, 'CN 101509077 A published Aug. 2009. Machine translation. cited by examiner | Extended European Search Report dated Dec. 8, 2016 in the corresponding European patent application No. 14804098.3. cited by applicant | First Office Action dated Nov. 21, 2016 in the corresponding Chinese patent application No. 201480030934.8. cited by applicant | International Search Report for International Application No. PCT/JP2014/064279 dated Jul. 15, 2014. cited by applicant | Masashi Nakamoto et al. \"Extraction of Rare Earth Elements as Oxides from a Neodymium Magnetic Sludge\", Metallurgical and Materials Transactions B, vol. 43, No. 3, Dec. 14, 2011, p. 468-476. cited by applicant | WO 2010-098381 A1. Written translation. (Year: 2010). cited by examiner | WO 2010098381 A1 published Sep. 2010. Machine translation. cited by examiner', 1, NULL, NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 39858, 39860, 39859, 10);
INSERT INTO `os_patent` VALUES (23347, '磁気ギア装置', '磁力齿轮装置', 'JP6442887B2', '【課題】渦電流損失が少なく、かつ、大型化を抑えた磁気ギア装置を提供する。【解決手段】特定の方向に沿って略等間隔に複数の磁極対が配されている第１磁石列１と、前記第１磁石列１に対向しており、前記第１磁石列１よりも短ピッチ（又は長ピッチ）で、略等間隔に複数の磁極対が配されている第２磁石列３と、前記第１磁石列１及び第２磁石列３間に配置してあり、略等間隔に複数の磁性体が配されている磁性体列２とを備える磁気ギア装置において、前記第２磁石列３（又は前記第１磁石列１）は希土類焼結磁石からなる第１層と希土類ボンド磁石からなる第２層からなる積層体を有し、前記第２層は前記磁性体列２に対向する側に配されているように構成する。【選択図】図１', '本发明的目的是提供一种具有小的涡流损耗和减小的尺寸的磁性齿轮装置。解决方案：第一磁体阵列1，其中多个磁极对沿特定方向以基本相等的间隔布置，并且第一磁体阵列1彼此相对于第一磁体阵列1第二磁体阵列3，其中多个磁极对以短间距（或长间距）以基本相等的间隔布置，并且第一磁体阵列1和第二磁体阵列3在包括磁体排2的磁性齿轮装置中，其中多个磁体间隔地布置，第二磁体排3（或第一磁体排1）是由稀土烧结磁体和稀土制成的第一层。层压板具有由粘结磁铁制成的第二层，第二层设置在面向磁性材料列2的一侧。 [选图]图1', 'JP2014140730', 1404748800, 'JP6442887B2', 1545753600, 1454256000, NULL, 1544112000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 18, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 4, 0, 0, 0, 1, NULL, NULL, NULL, '安池 一貴', NULL, 'JP1996340651A | JP2008245488A | JP2013017285A | WO2013011809A1', NULL, '池田哲也·中村健二、一ノ倉理、「永久磁石式磁気ギアの効率向上に関する一考察」、磁気学会論文誌、2009年、33巻、2号、130-134頁', 1, '\\20220510\\7d5a15d8df1d42618fb625b0283bf106.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39861, 39863, 39862, 2);
INSERT INTO `os_patent` VALUES (23348, '希土類焼結磁石製造法', '稀土烧结磁体的制造方法', 'JP6425251B2', '希土類焼結磁石の製造において、製造過程を簡素化し、製造コストを大幅に下げることを目的とする。本発明の希土類焼結磁石製造法は、合金粉末を焼結モールドに充填し、磁界中配向後、焼結モールドご焼結炉に入れて加熱し焼結体を得る過程において、焼結中に焼結モールドが消耗することを特徴とする。すなわち焼結モールドは樹脂製であるか、樹脂と焼結中に消失しない物質(フィラー)との混合物であって、使い捨てである。焼結モールドは、内部に焼結中に消耗する仕切り板を有し、複数の焼結体を同時に製造できる。樹脂中に含まれる焼結中に消失しない物質は、焼結モールドや仕切り板の形状が失われた後も残留し、焼結体間の溶着を防止する。', '在稀土烧结磁体的制造中,本发明的目的是简化制造过程并显着降低制造成本。在本发明的稀土烧结磁体制造方法中,合金粉末填充在烧结模具中,并且在磁场的对准放置在烧结的模具烧结炉中,将其加热,并在获得过程中烧结体并获得烧结体。其特征在于烧结模具已经耗尽。也就是说,烧结模具由树脂或混合物(填料)制成,其在烧结期间不会消失,并且是一次性的。烧结模具具有在烧结期间消耗的隔板,并且可以同时制造多个烧结体。在树脂中含有的烧结期间不会消失的物质仍然在烧结模具或隔板的形状丢失之后,并防止烧结体之间的焊接。', 'JP2015528369', 1405958400, 'JP6425251B2', 1542729600, 1488384000, NULL, 1541088000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 19, 1, 0, 0, 0, NULL, NULL, NULL, '2013167039 | 2014121019', 'JP | JP', 1374595200, 3, 3, NULL, NULL, 11, 0, 0, 0, 2, NULL, '898', NULL, '酒井 英夫', NULL, 'JP2005008476A | JP2006019521A | JP2006265601A | JP2007180373A | JP2007239032A | JP2007290248A | JP2007313835A | JP2008251762A | JP2008294469A | JP2009049202A | JP2012060139A', NULL, '俵好夫、大橋検「希土類永久磁石」森北出版株式会社、1999年、p.60-83 | 槙田顕、「Nd-Fe-B系焼結磁石の造粒プロセスと粒界構造に関する研究」京都大学工学研究科博士論文、2000年、p.59', 1, '\\20220510\\e9c52bd6b72a4593924fa7d5ba886147.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 39864, 39866, 39865, 3);
INSERT INTO `os_patent` VALUES (23349, 'R-T-B系焼結磁石', 'R-T-B系焼结磁石', 'JP6398977B2', 'Dyの含有量を抑制しつつ、高いBrと高いHcJを有するR-T-B系焼結磁石を提供する。\n\n 式uRwBxGayCuzAlqM残部T(RはRLとRHからなり、RLはNd及び/又はPr、RHはDy及び/又はTb、TはFeでありFeの10質量%以下をCoで置換でき、MはNb及び/又はZrであり、および不可避的不純物を含み、u、w、x、y、z、qは質量%を示す)によって表され、RHはR-T-B系焼結磁石の5質量%以下、0.4≦x≦1.0、0.07≦y≦1.0、0.05≦z≦0.5、0≦q≦0.1、0.100≦y/(x+y)≦0.340であり、酸素量(質量%)をα、窒素量(質量%)をβ、炭素量(質量%)をγとしたとき、v=u-(6α+10β+8γ)であって、v、wが、v≦32.0、0.84≦w≦0.93、-12.5w+38.75≦v≦-62.5w+86.125、を満足するR-T-B系焼結磁石。', '高B,同时抑制DY的内容r和高H.cJ提供基于R-T-B基烧结磁体。\n\n公式Urwbxgaycuzalqm剩余T(R是R1和RH,R1是Nd和/或Pr,Rh,Dy和/或Tb,T是Fe,10%重量或更少的Fe可以用CO代替,M是Nb和M /或Zr,并且包括不可避免的杂质,U,W,X,Y,Z和Q由质量%表示),RH为5质量%或更少的RTB的烧结磁体,0.4≤xx≤1.0 ,0.07≤y≤1.0,0.05≤z≤0.5,0≤q≤0.1,0.100≤y/(x + y)≤0.340,氧气量(质量%)是α,氮(质量%)。当β和碳量(质量%)设定为γ,v = U-(6α+10β+ 8γ),V,W是V≤32.0,0.84≤W≤0.93,-12.5W +38.75≤v≤-62.5 W + 86.125,基于RTB的烧结磁铁。', 'JP2015531815', 1407686400, 'JP6398977B2', 1538496000, 1488384000, NULL, 1536854400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 22, 5, 0, 0, 0, NULL, NULL, NULL, '2013167332', 'JP', 1376236800, 10, 10, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, '池田 安希子', NULL, 'JP1998289813A | JP2003510467A | JP2005197533A | WO2013008756A1', NULL, NULL, 1, '\\20220510\\530f2d8507b540348959d57b8bf6ae28.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39867, 39869, 39868, 11);
INSERT INTO `os_patent` VALUES (23350, 'R-T-B系焼結磁石およびR-T-B系焼結磁石の製造方法', 'R-T-B系烧结磁铁及R-T-B系烧结磁铁的制造方法', 'JP6406255B2', 'Dyの含有量を抑制しつつ、高いBrと高いHcJを有するR-T-B系焼結磁石およびその製造方法を提供する。\n\n 式 uRwBxGayCuzAlqMTによって表わされ、0.20≦x≦0.70、0.07≦y≦0.2、0.05≦z≦0.5、0≦q≦0.1であり、酸素量(質量%)をα、窒素量(質量%)をβ、炭素量(質量%)をγとしたとき、v=u-(6α+10β+8γ)であって、0.40≦x≦0.70のとき、v、wが、50w-18.5≦v≦50w-14、-12.5w+38.75≦v≦-62.5w+86.125、を満足し、0.20≦x<0.40のとき、v、wが、50w-18.5≦v≦50w-15.5、-12.5w+39.125≦v≦-62.5w+86.125であり、xが、-(62.5w+v-81.625)/15+0.5≦x≦-(62.5w+v-81.625)/15+0.8を満足するR-T-B系焼結磁石。', '提供了一种基于R-T-B基烧结磁体,其具有高BR和高HCJ,同时抑制Dy的含量,以及制造方法的方法。\n\n由等式Urwbxgaycuzalqmt表示,0.20≤x≤0.7,0.07≤y≤0.2,0.05≤z≤0.5,0≤q≤0.1,氧气(质量%)是α,氮(质量%)。当将碳量(质量%)设定为γ,v = U-(6α+10β+8γ),并且当0.40≤x≤0.70,V,W为50W-18.5≤V≤50W-14时, - 12.5 W + 38.75≤v≤-62.5w + 86.125,当0.20≤x<0.40,V,w为50w-18.5≤v≤50w-15.5,-12.5 w +39.125≤v。基于RTB的烧结磁体满足-62.5W + 86.125, - (62.5W + V-81.625)/ 15 + 0.5 x(62.5 W + V-81.625)/ 15 + 0.8。', 'JP2015531816', 1407686400, 'JP6406255B2', 1539705600, 1488384000, NULL, 1538064000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 32, 3, 0, 0, 0, NULL, NULL, NULL, '2013167333 | 2013243497 | 2014037836', 'JP | JP | JP', 1376236800, 11, 11, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, '池田 安希子', NULL, 'WO2013008756A1 | WO2013054845A1 | WO2013122255A1 | WO2013122256A1', NULL, NULL, 1, '\\20220510\\ad0a499087fb461a813d50c63ed24682.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39870, 39872, 39871, 12);
INSERT INTO `os_patent` VALUES (23351, 'R-t-b sintered magnet and method for producing r-t-b sintered magnet', 'r-t-b烧结磁铁及制造r-t-b烧结磁铁的方法', 'EP3035346B1', 'To provide an R-T-B based sintered magnet having high B r and high H CJ while suppressing the content of Dy, and a method for producing the same. Disclosed is an R-T-B based sintered magnet represented by the formula: uRwBxGayCuzAlqMT, where 0.20 ‰¤ x ‰¤ 0.70, 0.07 ‰¤ y ‰¤ 0.2, 0.05 ‰¤ z ‰¤ 0.5, 0 ‰¤ q ‰¤ 0.1; v = u - (6± + 10² + 8³), where the amount of oxygen (% by mass) is ±, the amount of nitrogen (% by mass) is ², and the amount of carbon (% by mass) is ³; when 0.40 ‰¤ x ‰¤ 0.70, v and w satisfy the following inequality expressions: 50w - 18.5 ‰¤ v ‰¤ 50w - 14, and -12.5w + 38.75 ‰¤ v ‰¤ -62.5w + 86.125; and, when 0.2U ‰¤ x < 0.40, v and w satisfy the following inequality expressions: 50w - 18.5 ‰¤ v ‰¤ 50w - 15.5 and -12.5w + 39.125 ‰¤ v ‰¤ -62.5w + 86.125, and x satisfy the following inequality expression: -(62.5w + v - 81.625)/15 + 0.5 ‰¤ x ‰¤ -(62.5w + v - 81.625)/15 + 0.8.', '本发明提供一种在抑制Dy含量的同时提供具有高B r和高H CJ的R-T-B系烧结磁铁及其制造方法。本发明公开了一种R-T-B基烧结磁体，其代表式为：uRwBxGayCuzAlqMT，其中0.20‰x≤0.70,0.07‰y 0.2，0.05‰z 0.5，0‰q 0.1。 v = u  - （6±+ 10 2 + 8 3），其中氧气量（质量％）为±，氮气量（质量％）为²，碳量（质量％）为³ ;当0.40‰x≤0.70时，v和w满足下列不等式：50w  -  18.5‰v 50w  -  14，-12.5w + 38.75‰v -62.5w + 86.125;当0.2U‰x <0.40时，v和w满足下列不等式：50w  -  18.5‰v 50w  -  15.5和-12.5w + 39.125‰v -62.5w + 86.125，x满足以下不等式： - （62.5w + v  -  81.625）/ 15 + 0.5‰x‰ - （62.5w + v  -  81.625）/ 15 + 0.8。', 'EP2014836886', 1407686400, 'EP3035346B1', 1552406400, 1466524800, NULL, 1552406400, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 54, 3, 0, 0, 0, NULL, NULL, NULL, '2013167333 | 2013243497 | 2014037836', 'JP | JP | JP', 1376236800, 11, 11, NULL, NULL, 8, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, 'EP2980808A1 | EP2985768A1 | JP1998289813A | JP2009260338A | JP2011211056A | WO2009004994A1 | WO2013008756A1 | WO2013054845A1', NULL, NULL, 1, '\\20220510\\9084cf16b6314ea5b418dba2469e4c00.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, '有效:DE,FR,SK,GB,IT,ES,CZ,TR | 失效:RS,NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,HU,SE,SI,MC,SM,IE,EE,CH,MT,IS,GR,AL,AT,CY,PL,RO,LI,NL | 未确认:MK', 39870, 39872, 39871, 12);
INSERT INTO `os_patent` VALUES (23352, 'R-T-B SINTERED MAGNET AND METHOD FOR PRODUCING R-T-B SINTERED MAGNET', 'r-t-b烧结磁体和制造r-t-b烧结磁体的方法', 'ES2717445T3', 'To provide an R-T-B based sintered magnet having high B r and high H CJ while suppressing the content of Dy, and a method for producing the same. Disclosed is an R-T-B based sintered magnet represented by the formula: uRwBxGayCuzAlqMT, where 0.20 ¿ x ¿ 0.70, 0.07 ¿ y ¿ 0.2, 0.05 ¿ z ¿ 0.5, 0 ¿ q ¿ 0.1; v = u - (6± + 10² + 8³), where the amount of oxygen (% by mass) is ±, the amount of nitrogen (% by mass) is ², and the amount of carbon (% by mass) is ³; when 0.40 ¿ x ¿ 0.70, v and w satisfy the following inequality expressions: 50w - 18.5 ¿ v ¿ 50w - 14, and -12.5w + 38.75 ¿ v ¿ -62.5w + 86.125; and, when 0.2U ¿ x < 0.40, v and w satisfy the following inequality expressions: 50w - 18.5 ¿ v ¿ 50w - 15.5 and -12.5w + 39.125 ¿ v ¿ -62.5w + 86.125, and x satisfy the following inequality expression: -(62.5w + v - 81.625)/15 + 0.5 ¿ x ¿ -(62.5w + v - 81.625)/15 + 0.8.', '提供一种在抑制Dy含量的同时具有高B r和高H CJ的R-T-B基烧结磁体及其制造方法。 公开了一种基于R-T-B的烧结磁体,由以下公式表示:uRwBxGayCuzAlqMT,其中0.20×x≤0.70,0.07y≤0.2,0.05≤z≤0.5,0≤q≤0.1;  v = u-(6±+10²+8³),其中氧气(质量%)为±,氮气(质量%)为²,碳(质量%)为³  ; 当0.40 x x 0.70时,v和w满足以下不等式:50w-18.5 v 50 -14,-12.5w + 38.75 v-62.5w + 86.125; 并且,当0.2U¿x <0.40,v和w满足以下不等式:50w-18.5 -v-50w-15.5和-12.5w + 39.125 -v -62.5w + 86.125,x满足以下不等式:-(62.5w + v  -81.625)/ 15 + 0.5¿x¿-(62.5w + v-81.625)/ 15 + 0.8。', 'ES2014836886', 1407686400, 'ES2717445T3', 1561046400, 1561046400, NULL, 1561046400, '西班牙', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T3', NULL, NULL, 39, 3, 0, 0, 0, NULL, NULL, NULL, '2013167333 | 2013243497 | 2014037836', 'JP | JP | JP', 1376236800, 11, 11, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\0926eb8921c04d1baeefdf4be6ac45d3.png', NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 39870, 39872, 39871, 12);
INSERT INTO `os_patent` VALUES (23353, 'R-T-B based sintered magnet and method for producing R-T-B based sintered magnet', 'R-T-B系烧结磁铁及R-T-B系烧结磁铁的制造方法', 'US10388442B2', 'To provide an R-T-B based sintered magnet having high Br and high HcJ while suppressing the content of Dy, and a method for producing the same. Disclosed is an R-T-B based sintered magnet represented by the formula: uRwBxGayCuzAlqMT, where 0.20≤x≤0.70, 0.07≤y≤0.2, 0.05≤z≤0.5, 0≤q≤0.1; v=u−(6α+10β+8γ), where the amount of oxygen (% by mass) is α, the amount of nitrogen (% by mass) is β, and the amount of carbon (% by mass) is γ; when 0.40≤x≤0.70, v and w satisfy the following inequality expressions: 50w−18.5≤v≤50w−14, and −12.5w+38.75≤v≤−62.5w+86.125; and, when 0.20≤x≤0.40, v and w satisfy the following inequality expressions: 50w−18.5≤v≤50w−15.5 and −12.5w+39.125≤v≤−62.5w+86.125, and x satisfy the following inequality expression: −(62.5w+v−81.625)/15+0.5≤x≤−(62.5w+v−81.625)/15+0.8.', '提供具有高B  r 和高H  cJ 的R-T-B基烧结磁体，同时抑制Dy的含量，及其制备方法。本发明公开了一种R-T-B基烧结磁体，其由下式表示：uRwBxGayCuzAlqMT，其中0.20≤x≤0.70,0.07≤y≤0.2,0.05≤z≤0.5,0≤q≤0.1; v = u-（6α+10β+8γ），其中氧的量（质量％）是α，氮的量（质量％）是β，碳的量（质量％）是γ;当0.40≤x≤0.70时，v和w满足下列不等式：50w-18.5≤v≤50w-14，-12.5w +38.75≤v≤-62.5w + 86.125;当0.20≤x≤0.40时，v和w满足下列不等式：50w-18.5≤v≤50w-15.5和-12.5w +39.125≤v≤-62.5w + 86.125，x满足下列不等式： - （62.5瓦特+ v-81.625）/15+0.5≤x≤-（62.5瓦特+ v-81.625）/15+0.8。', 'US14/911517', 1407686400, 'US10388442B2', 1566230400, 1467216000, NULL, 1566230400, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 27, 3, 0, 0, 0, NULL, NULL, NULL, '2013167333 | 2013243497 | 2014037836', 'JP | JP | JP', 1376236800, 11, 11, NULL, NULL, 14, 0, 0, 0, 3, NULL, '870', NULL, 'DUNN, COLLEEN P', 'JONES, JEREMY C', 'EP2980808A1 | EP2985768A1 | JP1998289813A | JP2009260338A | JP2011211056A | US20100233016A1 | US20110095855A1 | US20110262297A1 | US20140132377A1 | US20140286815A1 | US20160042847A1 | WO2009004994A1 | WO2013008756A1 | WO2013054845A1', NULL, 'Communication dated Mar. 23, 2017, issued by the European Patent Office in corresponding European Application No. 14836886.3. cited by applicant | International Preliminary Report on Patentability dated Feb. 16, 2016 from the International Bureau of WIPO in application No. PCT/JP2014/071229. cited by applicant. | International Search Report of PCT/JP2014/071229, dated Nov. 11, 2014. [PCT/ISA/210]. cited by applicant', 1, '\\20220510\\b9416a7098f64c4785ef1a3488c372cc.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 39870, 39872, 39871, 12);
INSERT INTO `os_patent` VALUES (23354, 'R-t-b system sintered magnet', 'R-t-b系烧结磁铁', 'EP3038116B1', 'To provide an R-T-B based sintered magnet having high B r and high H cJ while suppressing the content of Dy. Disclosed is an R-T-B based sintered magnet represented by the formula: uRwBxGayCuzAlqM(balance)T, where R is composed of light rare-earth element(s) RL and heavy rare-earth element(s) RH, RL is Nd and/or Pr, RH is Dy and/or Tb, T is Fe, and 10% by mass or less of Fe is capable of being replaced with Co, M is Nb and/or Zr, inevitable impurities being included, and u, w, x, y, z and q are expressed in terms of % by mass; RH accounts for 5% by mass or less of the R-T-B based sintered magnet, 0.4 ‰¤ x ‰¤ 1.0, 0.07 ‰¤ y ‰¤ 1.0, 0.05 ‰¤ z ‰¤ 0.5, 0 ‰¤ q ‰¤ 0.1, and 0.100 ‰¤ y/(x + y) ‰¤ 0.340; v = u - (6± + 10² + 8³), where the amount of oxygen (% by mass) is ±, the amount of nitrogen (% by mass) is ², and the amount of carbon (% by mass) is ³; and v and w satisfy the following inequality expressions: v ‰¤ 32.0, 0.84 ‰¤ w ‰¤ 0.93, and -12.5w + 38.75 ‰¤ v ‰¤ -62.5w + 86.125.', '提供具有高B r和高H cJ的R-T-B基烧结磁体，同时抑制了Dy的含量。公开了一种以RTB为基础的烧结磁体，由以下公式表示：uRwBxGayCuzAlqM（balance）T，其中R由轻稀土元素RL和重稀土元素RH组成，RL为Nd和/或Pr ，RH为Dy和/或Tb，T为Fe，Fe的10质量％以下可以被Co置换，M为Nb和/或Zr，不可避免地含有杂质，u，w，x， y，z和q以质量％表示。 RH占RTB基烧结磁体的质量百分比等于或小于5％，分别为0.4‰x‰1.0、0.07‰y‰1.0、0.05‰z‰0.5、0‰q‰0.1和0.100。 y /（x + y）≤0.340； v = u-（6±+10²+8³），其中氧气（质量％）为±，氮气（质量％）为²，碳（质量％）为³ ; v和w满足以下不等式：v‰32.0、0.84‰w‰0.93和-12.5w + 38.75‰v‰-62.5w + 86.125。', 'EP2014836459', 1407686400, 'EP3038116B1', 1574784000, 1467129600, NULL, 1574784000, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 32, 5, 0, 0, 0, NULL, NULL, NULL, '2013167332', 'JP', 1376236800, 10, 10, NULL, NULL, 7, 0, 0, 0, 1, NULL, '852', NULL, NULL, NULL, 'EP2980808A1 | EP2985768A1 | JP1998289813A | JP2003510467A | JP2005197533A | JP2011211056A | WO2013008756A1', NULL, 'T. KOHASHI;S. HIROSAWA;K. MOTAI;T. NISHIUCHI,The magnetism at the grain boundaries of NdFeB sintered magnet studied by spin-polarized scanning electron microscopy (spin SEM),Applied Physics Letters,vol.104,232408', 1, '\\20220510\\8908e5417a7146da85267f39552e53d3.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, '有效:DE,FR,GB | 失效:RS,NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,SE,SI,MC,SK,SM,IE,EE,CH,IS,IT,GR,AL,ES,AT,CZ,PL,RO,LI,NL | 未确认:HU,MK,MT,CY,TR', 39867, 39869, 39868, 11);
INSERT INTO `os_patent` VALUES (23355, 'R-T-B based sintered magnet', 'R-T-B基烧结磁铁', 'US10847290B2', 'To provide an R-T-B based sintered magnet having high Br and high HcJ while suppressing the content of Dy. Disclosed is an R-T-B based sintered magnet represented by the formula: uRwBxGayCuzAlqM(balance)T, where R is composed of light rare-earth element(s) RL and heavy rare-earth element(s) RH, RL is Nd and/or Pr, RH is Dy and/or Tb, T is Fe, and 10% by mass or less of Fe is capable of being replaced with Co, M is Nb and/or Zr, inevitable impurities being included, and u, w, x, y, z and q are expressed in terms of % by mass; RH accounts for 5% by mass or less of the R-T-B based sintered magnet, 0.4≤x≤1.0, 0.07≤y≤1.0, 0.05≤z≤0.5, 0≤q≤0.1, and 0.100≤y/(x+y)≤0.340; v=u−(6α+10β+8γ), where the amount of oxygen (% by mass) is α, the amount of nitrogen (% by mass) is β, and the amount of carbon (% by mass) is γ; and v and w satisfy the following inequality expressions: v≤32.0, 0.84≤w≤0.93, and −12.5w+38.75≤v≤−62.5w+86.125.', '提供具有高B基于R-T-B的烧结磁体 r  高H. cJ  抑制Dy的内容。 公开了一种由式:Urwbxgaycuzalqm(平衡)T表示的RTB的烧结磁体,其中R由光稀土元素(S)R1和重稀土元素RH组成,RL是Nd和/或Pr ,Rh是Dy和/或Tb,T是Fe,10质量%或更少的Fe能够用CO,M是Nb和/或Zr,不可避免的杂质,而U,W,X, y,z和q以%质量%表示; RH占RTB基烧结磁体的5%或更少,0.4≤x≤1.0,0.07≤y≤1.0,0.05≤z≤0.5,0≤q≤0.1,0.100≤y/(x + y) ≤0.340; v = U-(6α+10β+8γ),其中氧气量(质量%)是α,氮气量(质量%)是β,碳量(质量%)是γ; V和W满足以下不等式表达:V≤32.0,0.84≤W≤0.93,-12.5W +38.75≤V≤-62.5W + 86.125。', 'US14/911597', 1407686400, 'US10847290B2', 1606147200, 1467216000, NULL, 1606147200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 19, 5, 0, 0, 0, NULL, NULL, NULL, '2013167332', 'JP', 1376236800, 10, 10, NULL, NULL, 15, 0, 0, 0, 4, NULL, '870', NULL, 'SU, XIAOWEI', NULL, 'CN102360654A | CN1277277A | CN1277277C | EP2980808A1 | EP2985768A1 | JP1998289813A | JP2003510467A | JP2005197533A | JP2011211056A | US20040189426A1 | US20110279205A1 | US20140132377A1 | US20150170810A1 | US20160189837A1 | WO2013008756A1', NULL, 'Communication dated Feb. 16, 2017, from the European Patent Office in counterpart European application No. 14836459.9. cited by applicant | Communication dated Jul. 6, 2017, issued by the State Intellectual Property Office of People\'s Republic of China in counterpart application No. 201480043012.0. cited by applicant | International Preliminary Report on Patentability dated Feb. 16, 2016, issued by the International Bureau in corresponding International Application No. PCT/JP2014/071228. cited by applicant | International Search Report for PCT/JP2014/071228 dated Nov. 11, 2014. cited by applicant', 1, '\\20220510\\56dbf8a85d19446297a957b79c1c4649.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39867, 39869, 39868, 11);
INSERT INTO `os_patent` VALUES (23356, 'R-T-B-SYSTEM-SINTERMAGNET', 'R-T-B系统烧结磁铁', 'DE602014057602T2', 'Provided is an R-T-B system sintered magnet which has high Br and high HcJ, while suppressing the content of Dy. An R-T-B system sintered magnet which is represented by formula uRwBxGayCuzAlqM(the balance)T (wherein R is composed of RL and RH; RL is Nd and/or Pr; RH is Dy and/or Tb; T is Fe and 10 mass% or less of Fe can be substituted by Co; M is Nb and/or Zr; unavoidable impurities are contained; and u, w, x, y, z and q represent mass% of the respective constituents), and wherein RH is contained in an amount of 5 mass% or less of the R-T-B system sintered magnet; 0.4 ≤ x ≤ 1.0; 0.07 ≤ y ≤ 1.0; 0.05 ≤ z ≤ 0.5; 0 ≤ q ≤ 0.1; 0.100 ≤ y/(x + y) ≤ 0.340; if α is the amount of oxygen (mass%), β is the amount of nitrogen (mass%) and γ is the amount of carbon (mass%), v = u - (6α + 10β + 8γ); and v and w satisfy v ≤ 32.0, 0.84 ≤ w ≤ 0.93, -12.5w + 38.75 ≤ v ≤ -62.5w + 86.125.', '本发明提供一种R-T-B系烧结磁铁，其具有高Br和高HcJ，同时抑制Dy的含量。RTB系烧结磁铁，其由式uRwBxGayCuzAlqM（余量）T表示（其中R由RL和RH组成; RL为Nd和/或Pr; RH为Dy和/或Tb; T为Fe和10质量％或可以用Co取代少量的Fe; M是Nb和/或Zr;含有不可避免的杂质;并且u，w，x，y，z和q表示各成分的质量％），并且其中RH包含在RTB系烧结磁铁的量为5质量％以下;0.4≤x≤1.0;0.07≤y≤1.0;0.05≤z≤0.5;0≤q≤0.1;0.100≤y/（x + y）≤0.340;如果α是氧的量（质量％），则β是氮的量（质量％），γ是碳的量（质量％），v = u - （6α+10β+8γ）;v和w满足v≤32.0,0.84≤w≤0.93，-12.5w +38.75≤v≤-62.5w + 86.125。', 'DE602014057602', 1407686400, 'DE602014057602T2', 1574784000, 1574784000, NULL, 1574784000, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 41, 5, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39873, 39869, 39874, 11);
INSERT INTO `os_patent` VALUES (23357, 'GESINTERTER R-T-B-MAGNET UND VERFAHREN ZUR HERSTELLUNG EINES GESINTERTEN R-T-B-MAGNETS', '烧结的R-T-B磁体和制造烧结R-B磁体的方法', 'DE602014042978T2', 'Provided are: an R-T-B sintered magnet having a high Br and a high HcJ while suppressing Dy content; and a method for producing same. The R-T-B sintered magnet is represented by the formula uRwBxGayCuzAlqMT, 0.20 ≤ x ≤ 0.70, 0.07 ≤ y ≤ 0.2, 0.05 ≤ z ≤ 0.5, 0 ≤ q ≤ 0.1, when the amount of oxygen (mass%) is α, the amount of nitrogen (mass%) is β, and the amount of carbon (mass%) is γ, v = u - (6α + 10β + 8γ), when 0.40 ≤ x ≤ 0.70, v and w satisfy 50w - 18.5 ≤ v ≤ 50w -14 and -12.5w + 38.75 ≤ v ≤ -62.5w+86.125, when 0.20 ≤ x < 0.40, v and w are such that 50w - 18.5 ≤ v ≤ 50w - 15.5, -12.5w + 39.125 ≤ v ≤ -62.5w + 86.125, and x satisfies -(62.5w + v - 81.625)/15 + 0.5 ≤ x ≤ -(62.5w + v - 81.625)/15 + 0.8.', '本发明提供一种R-T-B烧结磁铁，其具有高Br和高HcJ，同时抑制Dy含量;及其制造方法。RTB烧结磁体由式uRwBxGayCuzAlqMT表示，0.20≤x≤0.70,0.07≤y≤0.2,0.05≤z≤0.5,0≤q≤0.1，当氧气量（质量％）为α时，量为氮（质量％）为β，碳量（质量％）为γ，v = u - （6α+10β+8γ），当0.40≤x≤0.70时，v和w满足50w - 18.5≤v≤50w-14和-12.5w +38.75≤v≤-62.5w + 86.125，当0.20≤x&lt;0.40时，v和w为50w-18.5≤v≤50w-15.5，-12.5w +39.125≤v≤-62.5w + 86.125，并且x满足 - （62.5w + v-81.625）/ 15 +0.5≤x≤ - （62.5w + v-81.625）/ 15 + 0.8。', 'DE602014042978', 1407686400, 'DE602014042978T2', 1552406400, 1552406400, NULL, 1552406400, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 57, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39875, 39872, 39876, 12);
INSERT INTO `os_patent` VALUES (23358, 'R-T-B系焼結磁石の製造方法', 'R-T-B基烧结磁体的制备方法', 'JP6288095B2', '式 uRwBxGayCuzAlqM残部Tで表し、RHは5%以下、0.20≦x≦0.70、0.07≦y≦0.2、0.05≦z≦0.5、0≦q≦0.1で、0.40≦x≦0.70のとき、v、wが、50w-18.5≦v≦50w-14、-12.5w+38.75≦v≦-62.5w+86.125、0.20≦x<0.40のとき、v、wが、50w-18.5≦v≦50w-15.5、-12.5w+39.125≦v≦-62.5w+86.125、xが、-(62.5w+v-81.625)/15+0.5≦x≦-(62.5w+v-81.625)/15+0.8の磁石の準備工程と、磁石を730℃以上1020℃以下に加熱後20℃/分以上で300℃まで冷却する高温熱処理工程と440℃以上550℃以下に加熱する低温熱処理工程を含む磁石の製造方法。', '用公式uRwBxGayCuzAlqM余数T表示，RH为5％或以下，0.20≤x≤0.70，0.07≤y≤0.2，0.05≤z≤0.5，0≤q≤0.1，并且当0.40≤x≤0.70时，v和w为 ，50w-18.5≤v≤50w-14，-12.5w +38.75≤v≤-62.5w+ 86.125，0.20≤x<0.40，v和w为50w-18.5≤v≤50w-15.5，-12.5  w + 39.125≦v≦-62.5w + 86.125，x为-（62.5w + v-81.625）/15+0.5≦x≦-（62.5w + v-81.625）/15+0.8 一种磁体的制造方法，其包括将磁体加热至730°C以上且1020°C以下，然后以20°C / min或更高温度冷却至300°C的高温热处理步骤，以及将其加热至440°C以上且550°C以下的低温热处理步骤。', 'JP2015534360', 1409500800, 'JP6288095B2', 1520352000, 1488384000, NULL, 1518710400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 25, 4, 0, 0, 0, NULL, NULL, NULL, '2013180951 | 2014061623', 'JP | JP', 1378051200, 10, 10, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '五貫 昭一', NULL, 'JP2003510467A | WO2012161355A1 | WO2013008756A1 | WO2015022945A1 | WO2015022946A1', NULL, NULL, 1, '\\20220510\\a630eebe646d4da984e751dc79be45a6.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39877, 39879, 39878, 11);
INSERT INTO `os_patent` VALUES (23359, 'Method of producing r-t-b sintered magnet', 'r-t-b烧结磁铁的制造方法', 'EP3043363B1', 'Disclosed is a method for producing a magnet, including a step of preparing a magnet represented by the formula: uRwBxGayCuzAlqM(balance)T, where RH is 5% or less, 0.20 ≤ x ≤ 0.70, 0.07 ≤ y ≤ 0.2, ≤ z ≤ 0.5, ≤ q ≤ 0.1; when 0.40 ≤ x ≤ 0.70, v and w satisfy the following inequality expressions: 50w - 18.5 ≤ v ≤ 50w - 14, and -12.5w + 38.75 ≤ v ≤ -62.5w + 86.125; and, when 0.20 ≤ x < 0.40, v and w satisfy the following inequality expressions: 50w - 18.5 ≤ v ≤ 50w - 15.5 and -12.5w + 39.125 ≤ v ≤ -62.5w + 86.125, and x satisfy the following inequality expression: -(62.5w + v - 81.625)/15 + 0.5 ≤ x ≤ -(62.5w + v - 81.625)/15 + 0.8; a high-temperature heat treatment step of heating the magnet to a temperature of 730°C or higher and 1,020°C or lower, and then cooling to 300°C at a cooling rate of 20°C/min; and a low-temperature heat treatment step of heating the magnet to a temperature of 440°C or higher and 550°C or lower.', '本发明公开了一种制造磁体的方法，包括制备由下式表示的磁体的步骤：uRwBxGayCuzAlqM（balance）T，其中RH为5％或更小，0.20≤x≤0.70,0.07≤y≤0.2，≤z≤ 0.5，≤q≤0.1;当0.40≤x≤0.70时，v和w满足下列不等式：50w-18.5≤v≤50w-14，-12.5w +38.75≤v≤-62.5w + 86.125;当0.20≤x<0.40时，v和w满足下列不等式：50w-18.5≤v≤50w-15.5和-12.5w +39.125≤v≤-62.5w + 86.125，x满足以下不等式： - （62.5w + v  -  81.625）/ 15 +0.5≤x≤ - （62.5w + v  -  81.625）/ 15 + 0.8;高温热处理步骤，将磁体加热到730℃或更高和1020℃或更低的温度，然后以20℃/ min的冷却速率冷却到300℃;以及将磁体加热到440℃或更高且550℃或更低的温度的低温热处理步骤。', 'EP2014839472', 1409500800, 'EP3043363B1', 1541520000, 1468339200, NULL, 1541520000, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 42, 4, 0, 0, 0, NULL, NULL, NULL, '2013180951 | 2014061623', 'JP | JP', 1378051200, 10, 10, NULL, NULL, 9, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, 'EP2980808A1 | EP2985768A1 | JP2001210508A | JP2003510467A | JP2006237168A | JP2011211056A | JP2011216678A | WO2012161355A1 | WO2013008756A1', NULL, NULL, 1, '\\20220510\\e91ea9f23a3a4a4e8736c363217eebaa.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, '有效:DE,FR,GB | 失效:RS,NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,HU,SE,SI,MC,SK,SM,IE,EE,CH,MT,IS,IT,GR,AL,ES,AT,CY,CZ,PL,RO,LI,TR,NL | 未确认:MK', 39877, 39879, 39878, 11);
INSERT INTO `os_patent` VALUES (23360, 'Method for producing R-T-B based sintered magnet', 'R-T-B系烧结磁铁的制造方法', 'US10658108B2', 'Disclosed is a method for producing a magnet, including a step of preparing a magnet represented by the formula: uRwBxGayCuzAlqM(balance)T, where RH is 5% or less, 0.20≤x≤0.70, 0.07≤y≤0.2, 0.05≤z≤0.5, 0≤q≤0.1; when 0.40≤x≤0.70, v and w satisfy the following inequality expressions: 50w−18.5≤v≤50w−14, and −12.5w+38.75≤v≤−62.5w+86.125; and, when 0.20≤x≤0.40, v and w satisfy the following inequality expressions: 50w−18.5≤v≤50w−15.5 and −12.5w+39.125≤v≤−62.5w+86.125, and x satisfy the following inequality expression: −(62.5w+v −81.625)/15+0.5≤x≤−(62.5w+v−81.625)/15+0.8; a high-temperature heat treatment step of heating the magnet to a temperature of 730° C. or higher and 1,020° C. or lower, and then cooling to 300° C. at a cooling rate of 20° C./min; and a low-temperature heat treatment step of heating the magnet to a temperature of 440° C. or higher and 550° C. or lower.', '公开了一种磁体的制造方法，包括制备由下式表示的磁体的步骤：uRwBxGayCuzAlqM（balance）T，其中RH为5％或更小，0.20≤x≤0.70、0.07≤y≤0.2、0.05≤z  ≤0.5，0≤q≤0.1; 当0.40≤x≤0.70时，v和w满足以下不等式：50w-18.5≤v≤50w-14，和-12.5w +38.75≤v≤-62.5w+ 86.125； 并且，当0.20≤x≤0.40时，v和w满足以下不等式：50w-18.5≤v≤50w-15.5和-12.5w +39.125≤v≤-62.5w+ 86.125，并且x满足以下不等式：  -（62.5w + v -81.625）/15+0.5≤x≤-（62.5w + v-81.625）/15+0.8; 高温热处理工序，是将磁铁加热至730℃以上且1020℃以下的温度，然后以20℃/ min的冷却速度冷却至300℃。 低温热处理工序是将磁铁加热至440℃以上且550℃以下的温度的工序。', 'US14/915801', 1409500800, 'US10658108B2', 1589817600, 1475078400, NULL, 1589817600, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 22, 4, 0, 0, 0, NULL, NULL, NULL, '2013180951 | 2014061623', 'JP | JP', 1378051200, 10, 10, NULL, NULL, 17, 0, 0, 0, 4, NULL, '870', NULL, 'DUNN, COLLEEN P', 'JONES, JEREMY C', 'DE19945942A1 | EP2980808A1 | EP2985768A1 | JP2001210508A | JP2003510467A | JP2006237168A | JP2011211056A | JP2011216678A | US20100233016A1 | US20110095855A1 | US20110262297A1 | US20140132377A1 | US20140184370A1 | US20160042847A1 | US6312494B1 | WO2012161355A1 | WO2013008756A1', NULL, 'Communication dated Mar. 31, 2017 from the European Patent Office in counterpart European application No. 14839472.9. cited by applicant | International Preliminary Report on Patentability issued from the International Bureau in counterpart International application No. PCT/JP2014/072920, dated Mar. 17, 2016. cited by applicant. | International Search Report of PCT/JP2014/072920 dated Dec. 9, 2014. | International Search Report of PCT/JP2014/072920 dated Dec. 9, 2014. cited by applicant', 1, '\\20220510\\801a208b626848eba1c29128ad0fdf76.png', NULL, NULL, 1, NULL, NULL, 13, NULL, NULL, NULL, 39877, 39879, 39878, 11);
INSERT INTO `os_patent` VALUES (23361, 'VERFAHREN ZUR HERSTELLUNG EINES R-T-B-SINTERMAGNETEN', '制造R-T-B烧结磁体的方法', 'DE602014035731T2', 'A method of producing a magnet including a step of preparing a magnet represented by the formula uRwBxGayCuzAlqM (balance: T), in which the RH is 5% or less, 0.20≰x0.70, 0.07≰y≰0.2, 0.05≰z≰0.5, and 0≰q≰0.1; when 0.40≰x≰0.70, v and w are such that 50w-18.5≰v≰50-14, and -12.5w+38.75≰v≰-62.5w+86.125; and when 0.20≰x<0.40, v and w are such that 50w‒18.5≰v≰50w‒15.5 and ‒12.5w+39.125≰v≰‒62.5w+86.125, and x is such that ‒(62.5w+v‒81.625)/15+0.5≰x≰‒(62.5w+‒81.625)/15+0.8; a high-temperature heat treatment step of heating the magnet to 730 to 1020°C, and then cooling the magnet to 300°C at 20°C/min or more; and a low-temperature heat treatment step of heating the magnet to 440 to 550°C.', '一种制造磁体的方法，包括制备由式uRwBxGayCuzAlqM（余量：T）表示的磁体的步骤，其中RH为5％或更低，0.20≰x0.70,0.07≰y≰0.2,0.05≰z≰ 0.5和0≰q≰0.1;当0.40≰x≰0.70时，v和w为50w-18.5≰v≰50-14，-12.5w +38.75≰v≰-62.5w + 86.125;当0.20≰x<0.40时，v和w为50w-18.5≰v≰50w-15.5和-12.5w +39.125≰v≰-62.5w + 86.125，并且x是这样的 - （62.5w + v- 81.625）/15+0.5≰x≰-（62.5瓦特+ -81.625）/15+0.8;高温热处理步骤，将磁体加热到730到1020℃，然后以20℃/ min或更高的速度将磁体冷却到300℃;以及将磁体加热到440至550℃的低温热处理步骤。', 'DE602014035731', 1409500800, 'DE602014035731T2', 1541520000, 1541520000, NULL, 1541520000, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 47, 4, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '852', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39880, 39879, 39881, 11);
INSERT INTO `os_patent` VALUES (23362, '化成処理装置および希土類磁石片の化成処理方法', '稀土磁体碎片的化学转化处理装置和化学转化处理方法', 'JP6327076B2', '【課題】従来よりも量産プロセスに適した化成処理装置およびそれを用いた化成処理方法を提供する。\n\n【解決手段】化成処理装置100は、希土類磁石の磁石片52が載置される上面を有し、磁石片52よりも小さな開孔部を多数有するベルト40と、ベルト40を予め決められた方向に移動させる駆動部と、ベルト40の下側において、磁石片用の化成処理液をベルトに向けて噴出するように、予め決められた方向に沿って配列された複数の第1下側ノズル12aと、ベルト40の上側において、化成処理液をベルトに向けて噴出するように、予め決められた方向に沿って配列された複数の第1上側ノズル12bとを有する。\n\n【選択図】図1', '本发明的一个目的是提供一种适用于批量生产过程的化学处理设备和使用该的方法。\n\n复合处理器100具有具有大量孔的带40,该孔具有小于磁铁件52的大量孔,以及具有稀土磁体的大量开放芯52的带40,以及带40预定12a在沿预定方向上布置的多个第一下喷嘴12a的内容,以便将磁铁件的化学转换处理溶液朝向带40的下侧的带朝向带40的下侧,并且在上侧在带40中,它具有沿预定方向布置的多个第一上喷嘴12b,以将化学转换处理液朝向带子喷射。\n\n图1', 'JP2014183151', 1410192000, 'JP6327076B2', 1527004800, 1461168000, NULL, 1524758400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 9, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '宮本 靖史', NULL, 'JP1991257172A | JP2000150216A | JP2002220675A | JP2002220680A | JP2003332162A | JP2010263223A', NULL, NULL, 1, '\\20220510\\671fdb9c42ac425a95e8af136b84ec69.png', NULL, NULL, 1, NULL, NULL, 11, NULL, NULL, NULL, 39882, 39884, 39883, 2);
INSERT INTO `os_patent` VALUES (23363, '希土類元素の回収方法', '回收稀土元素的方法', 'JP6323284B2', '(修正有)\n\n【課題】効率的に希土類元素を回収することとともに、処理容器をその消耗や損傷を抑制して長期に亘って繰り返し用いる方法の提供。\n\n【解決手段】少なくとも希土類元素と鉄族元素を含む処理対象物に対して酸化処理を行い、酸化処理を行った処理対象物と粒状ないし粉末状の炭素物質の混合物を処理容器に収容し、不活性ガス雰囲気中又は真空中において1350℃未満の温度で熱処理することによって焼結体を得る第1熱処理工程と、第1熱処理工程で得られる焼結体を、処理容器に、少なくとも焼結体と容器底面との間にカーボンブラックが介在するように収容し、不活性ガス雰囲気中または真空中において1350℃以上の温度で熱処理する第2熱処理工程からなる2段階の工程により、酸化処理を行った処理対象物の炭素の存在下での熱処理を実行し、希土類元素を酸化物Bとして鉄族元素Aから分離して回収する方法。\n\n【選択図】図3', '(纠正)\n\n要解决的问题:为了有效地回收稀土元素,提供一种使用加工容器并抑制其消耗和损坏并在很长一段时间内使用的方法。\n\n解决方案解决方案制造方法:在包含至少稀土元素和铁基的处理对象上进行氧化处理,并在加工容器中容纳处理处理物体的混合物和粒状和粉状碳物质的混合物。 ,通过在活性气体气氛中或真空中通过热处理获得烧结体的第一热处理步骤,在第一热处理步骤中获得的烧结体,以及具有至少烧结体的烧结体的烧结体。该通过在容器底表面与惰性气体气氛中的热处理或在1350℃或更高的温度下的热处理中,由氧化处理组成的两步​​处理进行氧化处理。一种进行热处理的方法待处理的受试者的碳的存在,并且稀土元素与铁基元素A分离并作为氧化物B恢复。\n\n图3.', 'JP2014199288', 1411920000, 'JP6323284B2', 1526400000, 1462723200, NULL, 1524153600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 12, 0, 0, 0, 0, NULL, NULL, NULL, '祢屋 健太郎', NULL, 'JP2004269978A | JP2009249674A | JP2013142143A | JP2014129595A | JP2014145099A | JP2014169497A | US6309441B1 | WO2010098381A1 | WO2013018710A1 | WO2014104205A1 | WO2014115876A1 | WO2014192874A1', NULL, NULL, 1, '\\20220510\\7a6d423c67a9417198ab63c1bb62ea94.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39885, 39887, 39886, 2);
INSERT INTO `os_patent` VALUES (23364, '乾燥機およびそれを用いた磁石片の乾燥方法', '干燥器和使用其的磁片的干燥方法', 'JP6384238B2', '【課題】小型で、かつ、効率よく加工品を乾燥させることが可能な乾燥機を提供する。\n\n【解決手段】ある実施形態の乾燥機100は、互いに略対向する位置に設けられた少なくとも1つの加圧気体導入口12a、12b、12cまたは12dを有する筒状の内壁12と、加圧された気体が供給される供給口14aを有し、内壁12との間に、加圧された気体を一時的に貯える空間10sを形成する外壁14とを有する。内壁12によって画定される筒内の磁石片52に、少なくとも1つの加圧気体導入口12aまたは12bから気体を吹き付けることによって、磁石片52を乾燥させる。\n\n【選択図】図1', '本发明的一个目的是提供一种能够用小尺寸和有效地干燥工件的干燥器。\n\n解决方案:一个实施例的干燥器100用圆柱形内壁12加压,圆柱形内壁12具有至少一个加压气体引入端口12a,12b,12c或12d,其设置在彼此基本相对的位置。它具有气体供应端口14a和具有外壁14,外壁14形成空间10s临时累积内壁12之间的加压气体。通过将气体与至少一个加压气体引入端口12a或12b吹气,磁件52在由内壁12限定的气缸中在磁体件52上干燥。\n\n图1', 'JP2014198267', 1411920000, 'JP6384238B2', 1536076800, 1462723200, NULL, 1534435200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 2, 0, 0, 0, 0, NULL, NULL, NULL, '土屋 正志', NULL, 'JP2000294440A | JP2004293843A', NULL, NULL, 1, '\\20220510\\4d12dc4321f74b1fb77f99c85fec2616.png', NULL, NULL, 1, NULL, NULL, 14, NULL, NULL, NULL, 39888, 39890, 39889, 2);
INSERT INTO `os_patent` VALUES (23365, 'R-T-B系焼結磁石の製造方法', '制造R-T-B基烧结磁体的方法', 'JP6414740B2', '【課題】重希土類元素RHをできるだけ使用することなく、Br、HcJ、Hk/HcJの全てが高いレベルにある優れた磁気特性を有するR-T-B系焼結磁石を安定して製造することができる-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】従来一般に用いられてきたR-T-B系合金とほぼ同様のB量からなりGaを必須元素として含有するR-T-B系の主合金と、Pr、B、TiまたはZr、およびFeを必須元素として含有する副合金とを、主合金と副合金とを混合した混合合金を微粉砕した混合合金微粉砕粉末100質量%に含有されるTiが0.1〜0.3質量%またはZrが0.19〜0.57質量%となるように混合し、成形、焼結、熱処理する。\n\n【選択図】なし', '[问题:主题之间] Breek Element Rh尽可能多,Br, HcJ, Hk/ HcJ提供了一种制造T-B基烧结磁体的方法,其可以稳定地生产具有优异磁性的R-T-B基烧结磁体。\n\n溶液:包含与通常使用的RTB基合金的B剂量大致类似于通常使用的RTB的合金,以及Pr,B,Ti或Zr,以及Fe作为必需元素的Fe作为必需元素。混合合金细磨粉末含有含有混合合金细磨粉末的混合合金的细粉碎粉末与主取向混合,侧合金为0.1至0.3质量%,Zr为0.19至0.57质量%。混合,形式,烧结和热量。\n\n[选择图]无', 'JP2014217911', 1414339200, 'JP6414740B2', 1540915200, 1463587200, NULL, 1539273600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 36, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '森 透', NULL, 'JP1993021218A | JP2005197301A | WO2004029998A1 | WO2013008756A1 | WO2013122256A1', NULL, NULL, 1, '\\20220510\\82312e542074466d8143f9798c598181.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39891, 39893, 39892, 2);
INSERT INTO `os_patent` VALUES (23366, '磁石特性測定方法及び磁石特性測定装置', '磁铁特性测量方法和磁铁特性测量装置', 'JP6451262B2', '【課題】検出電圧波形から共振周波数成分を除去することで、精度よく磁石の磁気特性を測定することができる磁石特性測定方法及び磁石特性測定装置を提供する。\n\n【解決手段】磁化検出コイルとしてヘルムホルツコイルを用いることとし、磁化検出コイルに並列にコンデンサを接続し、ヘルムホルツコイルに発生する浮遊容量に起因する検出電圧波形の共振周波数成分を安定させた後、磁化検出コイルの検出電圧波形を測定し、共振周波数成分を特定して、移動平均のポイント数を決定し、測定した検出電圧波形から移動平均処理を用いて共振周波数成分を除去し、共振周波数成分を除去した検出電圧波形を利用して磁石の磁気特性を得る。\n\n【選択図】図5', '要解决的问题:提供一种磁体特性测量方法和磁体特性测量装置,其能够通过从检测到的电压波形移除谐振频率分量来测量磁体的磁性特性。\n\n解决方案:在Helm-Holtz线圈用作磁化检测线圈之后,电容器并联连接到磁化检测线圈,并且由于亥姆霍兹线圈中产生的浮动电容而导致的检测电压波形的谐振频率分量稳定,测量检测线圈的检测电压波形的磁化,并指定了谐振频率分量,确定了移动平均值的移动点的数量,并且使用该谐振频率分量从测量的检测电压波形中移除移动平均处理,并且谐振频率分量是使用移除的检测电压波形获得磁体的磁性。\n\n图5.', 'JP2014242049', 1417104000, 'JP6451262B2', 1547568000, 1464796800, NULL, 1545321600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 12, 0, 0, 0, 0, NULL, NULL, NULL, '續山 浩二', NULL, 'JP1997033627A | JP2000261819A | JP2001228227A | JP2007005514A | JP2007033195A | JP2007180372A | JP2008519268A | JP2012037327A | JP2012135865A | JP2012500080A | US20110140688A1 | US20140260795A1', NULL, NULL, 1, '\\20220510\\9c5dc53a09194c969dd879409c1f943b.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39894, 39896, 39895, 2);
INSERT INTO `os_patent` VALUES (23367, '希土類元素の回収方法', '稀土元素的回收方法', 'JP6492657B2', '【課題】 少なくとも希土類元素と鉄族元素を含む処理対象物に対して酸化処理を行った後、処理環境を炭素の存在下に移して熱処理することで、希土類元素を酸化物として鉄族元素から分離して回収する方法において、酸化処理を行った処理対象物を炭素の存在下で熱処理することで得られる、一方が希土類元素の酸化物を主成分とする塊状物であり、他方が鉄族元素の炭素との合金を主成分とする塊状物である、互いに独立かつ密接して存在する2種類の塊状物を、小さな力によって効果的に分離することができる方法を提供すること。\n\n【解決手段】 酸化処理を行った処理対象物を炭素の存在下で熱処理した後の、1350℃から1300℃に至るまでの降温を、5℃/分以上の速度で行うことを特徴とする。\n\n【選択図】 図1', '要解决的问题:对含有至少稀土元素和铁基的加工靶进行氧化处理,将加工环境转移到存在碳和热处理稀土元素作为稀土的氧化物元素。在分离和回收的方法中,通过在碳存在下处理氧化处理的热处理获得,一种是主要由稀土元素的氧化物组成的大物质,另一个是提供一种有效地分离两种肿块的方法,并用具有元件的碳作为主要成分的碳的合金密切地存在。\n\n溶液:在碳存在下热处理后进行氧化处理,并以1350℃至1300℃的温度以5℃/米或更高的速率进行。\n\n图1', 'JP2014266792', 1419523200, 'JP6492657B2', 1554220800, 1468166400, NULL, 1552579200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, '萩原 周治', NULL, 'JP2009249674A | JP2013199698A | WO2010098381A1 | WO2013018710A1', NULL, NULL, 1, '\\20220510\\1ee317e0af2c403c8e44f83cf0e67237.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39897, 39899, 39898, 2);
INSERT INTO `os_patent` VALUES (23368, '距離測定システム及び距離測定方法', '测距系统及测距方法', 'JP6623518B2', '【課題】永久磁石を用いた非接触型の距離測定システム、及びこれを用いた距離測定方法において、永久磁石を大型化しなくとも、距離の測定精度を向上させることが可能な距離測定システム及び距離測定方法を提供する。\n\n【解決手段】所定の接離方向に相対移動可能な第1部材11及び第2部材12間の距離を測定する距離測定システム1は、第1部材11に形成された凹部110に一部が嵌合する永久磁石2と、第2部材12に固定され、永久磁石2により発生する磁界の強度を検出する磁界センサ3とを備え、第1部材11は、軟磁性体からなり、凹部110が第2部材12に向かって開口し、永久磁石2は、それ自体の磁力によって第1部材11に固定され、かつ凹部110への嵌合により離接方向に対して交差する方向への移動が規制される。\n\n【選択図】図3', '解决的问题：提供一种使用永磁体的非接触式测距系统及其使用的测距方法，能够在不增加永磁体尺寸的情况下提高测距精度。 提供一种测量方法。\n\n 在第一构件（11）上形成的凹部（110）中，部分地装配有用于测量可沿预定的接触/分离方向相对移动的第一构件（11）和第二构件（12）之间的距离的距离测量系统（1）。 待安装的永磁体2和固定在第二构件12上并检测由永磁体2产生的磁场强度的磁场传感器3，第一构件11由软磁性材料制成，并且凹部110具有第一部分。  2永磁体2朝着构件12敞开，并通过永磁体2的磁力固定在第一构件11上，并且通过与凹槽110配合，限制了在与分离/连接方向相交的方向上的移动。 它\n\n [选择图]图3', 'JP2015006613', 1421337600, 'JP6623518B2', 1577203200, 1469376000, NULL, 1575561600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '眞岩 久恵', NULL, 'JP1977001157U | JP1991109142U | JP1991243801A | JP1992078583U | JP1993087187A | JP1996226046A | JP2007248105A', NULL, NULL, 1, '\\20220510\\ec732e535c1843efa5036f08c15c86e3.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39900, 39902, 39901, 4);
INSERT INTO `os_patent` VALUES (23369, '磁粉除去方法及び磁粉除去装置', '磁粉除去方法及び磁粉除去装置', 'JP6390442B2', '(修正有)\n\n【課題】磁粉を磁界中で成形してなる成形体の表面に付着した磁粉を除去する際に、一旦除去した磁粉が成形体に再付着しないような除去方法及びそのための除去装置を提供する。\n\n【解決手段】磁界中で磁粉を成形して得られた成形体Cの表面に付着した不要な磁粉を除去する磁粉除去方法であって、配列させた複数の永久磁石M1~M4を成形体に対して相対的に移動させることにより、強度及び方向が時間的に変化する磁界を成形体に印加し、成形体に付着した磁粉を変化する磁界によって剥離するとともに、永久磁石によって吸着し、除去する。\n\n【選択図】図1', '(纠正)\n\n本发明的目的是提供一种用于模制体的去除方法和去除装置,以及其去除装置,使得磁粉一旦移除,磁粉不会将连接到磁性的模制物品的表面附接到所连接的磁粉场地。\n\n去除去除磁粉的磁粉以除去粘附在通过模制在磁场中的磁粉的表面C的表面上的不必要的磁粉,以及通过相对于每个移动的多个永磁体M1至M4。其他,其中强度和方向变化的磁场在时间上变化,通过将附着到模制体附着的磁粉的磁场剥离,并通过永磁体吸附和去除。。\n\n图1', 'JP2015009503', 1421769600, 'JP6390442B2', 1537286400, 1469376000, NULL, 1535644800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 10, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '井上 健一', NULL, 'JP1999273978A | JP2001062336A | JP2002083729A | JP2010172824A | US20020020470A1 | WO2001089747A1', NULL, NULL, 1, '\\20220510\\81f5f6fd12ac4e4692434bcd84a3662f.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 39903, 39905, 39904, 2);
INSERT INTO `os_patent` VALUES (23370, 'NdFeB焼結磁石及びその製造方法', 'NdFeB烧结磁体及其制造方法', 'JP6005768B2', '【課題】厚さが5mm以上であっても、高い保磁力HcJを有し、且つ、最大エネルギー積(BH)max及び角型比SQの値が高いNdFeB焼結磁石を製造する方法を提供する。\n\n【解決手段】NdFeB磁石の主相粒子に希土類リッチ相が付着した微粉を作製し、それを焼結することにより金属状態の希土類の量が原子比で12.7%~16.0%であるNdFeB磁石の基材を作製し、該基材の表面にDy又は/及びTbを含む金属又は合金の粉体を塗布して所定温度に加熱することにより、Dy又は/及びTbを該基材内に該基材の表面から1cm2あたり10mg以上拡散させる粒界拡散処理を行う。\n\n【選択図】図2', '本发明公开了一种烧结NdFeB磁体，即使当烧结磁体具有5mm或更大的厚度时，其具有高矫顽力（H cJ），高最大能量积（（BH）max）和高矩形比（SQ）。通过晶界扩散工艺在烧结的NdFeB磁体的基材中的晶界中扩散Dy和/或Tb来制造烧结的NdFeB磁体。烧结NdFeB磁体的特征在于，基材中金属态的稀土元素的原子比为12.7-16.0％，富稀土相从基材表面延伸至2.5的深度。从基材的晶界处的表面开始，通过晶界扩散处理使RH扩散的晶界达到距离表面2.5mm的深度。', 'JP2015010195', 1421856000, 'JP6005768B2', 1476201600, 1435766400, NULL, 1473955200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, '2009164276', 'JP', 1247155200, 15, 15, NULL, NULL, 6, 0, 0, 0, 0, NULL, '863', NULL, '小林 大介', NULL, 'JP2005320628A | JP2007258455A | JP2008147634A | WO2006043348A1 | WO2006064848A1 | WO2008139690A1', NULL, NULL, 1, '\\20220510\\17546b4798a147b49dc9694a0aaca13f.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39512, 39514, 39513, 15);
INSERT INTO `os_patent` VALUES (23371, 'Method and device for recovering hydrogen pulverized powder of raw-material alloy for rare-earth magnet', '一种稀土磁体原料合金氢粉回收方法及装置', 'US9643253B2', 'A method and a device for recovering hydrogen pulverized powder of a raw-material alloy for rare-earth magnets capable of lowering the possibility that hydrogen pulverized powder remains in a recovery chamber; therefore, enhancing magnetic properties by reducing an oxygen content of an obtained rare-earth magnet. A processing container 50 is carried into a recovery chamber 40 from a processing chamber after inert gas is introduced into the recovery chamber 40. The raw-material alloy for rare-earth magnets in the processing container 50 is discharged into the recovery chamber 40 after the pressure in the recovery chamber 40 is reduced Thereafter, inert gas is introduced into the recovery chamber 40, and the raw-material alloy for rare-earth magnets is recovered into the recovery container 50 after a pressure in the recovery chamber 40 is set to a predetermined pressure by inert gas.', '一种回收稀土磁体用原料合金的氢粉末粉末的方法和装置，能够降低氢粉末残留在回收室中的可能性。因此，通过降低所得稀土磁体的氧含量来增强磁性能。在将惰性气体引入回收室之后，将处理容器 50 从处理室输送到回收室 40 。处理容器 50 中的稀土磁体用原料合金在回收室压力 40  40  >之后，将惰性气体引入回收室，并且在压力之后将稀土磁体用原料合金回收到回收容器中 50 在回收室中，通过惰性气体将b 设定为预定压力。', 'US14/607016', 1422288000, 'US9643253B2', 1494259200, 1433952000, NULL, 1494259200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 21, 3, 0, 0, 0, NULL, NULL, NULL, '2009179576 | PCT/JP2010/061522', 'JP | WO', 1248969600, 14, 14, NULL, NULL, 12, 0, 0, 0, 3, NULL, '875', NULL, 'WYSZOMIERSKI, GEORGE', NULL, 'CN1062232A | CN1288239A | CN1550261A | JP2005082891A | JP2005118625A | JP2006286859A | US20060292395A1 | US20130309122A1 | US4027722A | US5143560A | US5417773A | US6709533B2', NULL, 'Chinese Office Action dated May 6, 2013, in counterpart Chinese Application No. 201080034211.7. cited by applicant. | International Search Report for International Application No. PCT/JP2010/061522 dated Aug. 24, 2010. cited by applicant | Wang, et al., \"Research on Recovery and Production of Rare Earth from Iron Alloy Scraps\", Rare Metals and Cemented Carbides, vol. 37, No. 2, Jun. 2009, pp. 44-46. cited by applicant', 1, '\\20220510\\9e74c2b5c7594b76b004e6dbfaced305.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 39504, 39506, 39505, 15);
INSERT INTO `os_patent` VALUES (23372, '極異方性リング磁石、及びそれを用いた回転子', '极性各向异性环形磁铁和使用它的转子', 'JP6384543B2', '4極、6極、8極、10極、12極又は14極の多極異方性を有する断面円形の外周面と断面多角形の内周面とを有し、前記外周面の極数が前記多角形の頂点の数の整数倍であり、前記極数をPとした場合の内径(D1)と外径(D2)との比D1/D2が、式:D1/D2=1-K(π/P)[ただし、P=4のとき、Kの値は0.51〜0.70、P=6のとき、Kの値は0.57〜0.86、P=8のとき、Kの値は0.59〜0.97、P=10のとき、Kの値は0.59〜1.07、P=12のとき、Kの値は0.61〜1.18、及びP=14のとき、Kの値は0.62〜1.29である。]で表わされるとともに前記外周面の極位置の少なくとも一つと、前記内周面を構成する断面多角形の頂点の少なくとも一つとが周方向において一致していることを特徴とするR-T-B系焼結リング磁石。', '管道,六个杆,八个吹笛员,10个极,12极或14极的多极体或14个杆和横截面多边形的内周表面的数量,以及外周表面的数量D1 / D2之间的数量当多边形的顶点的数量设定为P. d1 / d2是π/ p时,内径(d1)和外径(d2),当p = 4时,当k值为0.51至0.70时,p = 6,k值为0.57至0.86,P = 8,k值为0.59至0.97,p当= 10时,当k值为0.59至1.07和p = 12时,k值为0.61至1.18和p = 14,k的值为0.62至1.29。基于RTB的烧结环,其特征在于,构成内周表面的外周表面的极位置的至少一个杆位置和构成内周表面的横截面多边形的顶点在圆周方向上表示。磁体。', 'JP2016505168', 1424275200, 'JP6384543B2', 1536076800, 1490803200, NULL, 1534435200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 1, 0, 0, 0, NULL, NULL, NULL, '2014037755', 'JP', 1393516800, 3, 3, NULL, NULL, 2, 0, 0, 0, 0, NULL, NULL, NULL, '樋口 幸太郎', NULL, 'JP2003017309A | JP2004274859A', NULL, NULL, 1, '\\20220510\\f3a8e2be68274e17a3eb0f18cab1280f.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 39906, 39908, 39907, 3);
INSERT INTO `os_patent` VALUES (23373, '極異方性リング磁石、及びそれを用いた回転子', '极性各向异性环形磁铁和使用它的转子', 'JP6341115B2', '(修正有)\n\n【課題】回り止めのため断面多角形の内周面を有し、応力による割れの発生がほとんど発生しないR-T-B系極異方性焼結リング磁石、回転子を提供する。\n\n【解決手段】4極、6極、8極、10極、12極又は14極の多極異方性を有する断面円形の外周面と断面多角形の内周面とを有し、外周面の極数が前記多角形の頂点の数の整数倍であり、極数をPとした場合の内径(D1)と外径(D2)との比D1/D2が、式:D1/D2=1-K(π/P)[ただし、P=4のときKは0.51~0.70、P=6のときKは0.57~0.86、P=8のときKは0.59~0.97、P=10のときKは0.59~1.07、P=12のときKは0.61~1.18、及びP=14のときKは0.62~1.29である。]で表わされるR-T-B系焼結リング磁石。\n\n【選択図】図1', '(纠正)\n\n基于R-T-B的极状烧结环磁体和转子,其具有由于停止而具有横截面多边形形状的内周表面。\n\n圆形横截面的横截面外周表面,其具有多杆各向异性,具有4个吹笛员,六个极,8个吹笛员,10个吹笛器,12个极或14个杆和横截面多边形表面的多个各向异性,以及外周边当极点的数量是多边形的顶点数量的积分倍数时,表面直径(D1)和外径(D2)之间的比率D1 / D2的比率D1 / D2是P. D1 / D2的最大数量,D1 / d2 = 1-k(π/ p)[p = 4k的时间为0.51至0.70,p = 6 k为0.57至0.86,P = 8 k为0.59至0.97,当K是时,P = 10 0.59当-1.07时,p = 12 k为0.61至1.18,P = 14和k为0.62至1.29。基于R-T-B的烧结环磁铁代表。\n\n图1', 'JP2015033623', 1424707200, 'JP6341115B2', 1528819200, 1472659200, NULL, 1527177600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '田村 惠里加', NULL, 'JP1989027208A | JP2004274859A | JP2005044820A | JP2005304178A | JP2008109838A | WO2005124800A1', NULL, NULL, 1, '\\20220510\\0f0ca511c02c4743a9e27a39e15ab481.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39909, 39911, 39910, 2);
INSERT INTO `os_patent` VALUES (23374, 'R-T-B系焼結磁石の製造方法', 'R-T-B基烧结磁体的制备方法', 'JP6094612B2', '【課題】重希土類元素RHをできるだけ使用することなく、Brの低下を抑制しつつ高いHcJおよび高いHk/HcJを有するR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】R:27~35質量%、B:0.9~1.0質量%、Ga:0.15~0.6質量%、残部Tおよび不可避的不純物を含有する合金粉末を準備する工程と、Tiの水素化物の粉末を準備する工程と、合金粉末とTiの水素化物の粉末とを混合後の混合粉末100質量%に含有されるTiが0.3質量%以下となるように混合し混合粉末を準備する工程と、混合粉末を成形し成形体を準備する工程と、成形体を焼結しR-T-B系焼結磁石素材を準備する工程と、R-T-B系焼結磁石素材に熱処理を施す工程と、を含む。\n\n【選択図】図5', '[问题:主题之间] Breek Element Rh尽可能多,Br高h以抑制衰落cJ和高H.k/ HcJ提供了一种制造基于R-T-B基烧结磁体的方法。\n\n溶液:R:27至35重量%,B:0.9至1.0重量%,Ga:0.15至0.6重量%,制备含有残留的T和不可避免的杂质的合金粉末,以及Ti Hydide制备粉末的方法,合金粉末的粉末和Ti的氢化物粉末,以及混合后含有100质量%的粉末,制备混合粉末,使得制备0.3质量%以下。形成混合粉末并制备的过程模塑主体;和烧结模塑主体并制备基于RTB的烧结磁体材料的步骤,以及对基于RTB的烧结磁体材料的热处理。\n\n图5.', 'JP2015038694', 1424966400, 'JP6094612B2', 1489507200, 1444233600, NULL, 1487865600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 26, 2, 0, 0, 0, NULL, NULL, NULL, '2014037838', 'JP', 1393516800, 2, 9, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '佐久 聖子', NULL, 'JP1990298231A | JP2008264875A | WO2007102391A1 | WO2010073533A1 | WO2013008756A1', NULL, NULL, 1, '\\20220510\\b2e1af8d7820470a968eb9a1ad48c95f.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39912, 39914, 39913, 9);
INSERT INTO `os_patent` VALUES (23375, '炭素が除去されたR-Fe-B系永久磁石合金再生材料を製造する方法', '生产R-Fe-B基永磁合金再生材料的方法，其中已除去碳', 'JP6421645B2', '【課題】 R-Fe-B系永久磁石のスクラップやスラッジ、使用済み磁石などとして発生する炭素含有磁石合金から炭素を効果的に除去して合金再生材料を製造する方法を提供すること。\n\n【解決手段】 炭素を含むR-Fe-B系永久磁石合金に対して水素粉砕を行った後、100kPa以上の水素ガス雰囲気中にて600℃〜900℃で第1の熱処理を行い、さらに処理環境を10kPa以下に減圧してから1000℃以上で第2の熱処理を行うことを特徴とする。\n\n【選択図】 図2', '本发明的目的是提供一种通过用作R-Fe-B永磁体的废料或污泥的含碳磁体合金而通过有效地除去碳而产生合金再循环材料的方法。\n\n在氢研磨到含有碳的R-Fe-B基永磁合金之后,在100kPa或更大的氢气气氛中在600℃至900℃下进行第一热处理,进一步加工其特征在于环境减少到10kPa或更小,并且第二热处理在1000℃或更高。\n\n图2.', 'JP2015039669', 1425052800, 'JP6421645B2', 1542124800, 1473004800, NULL, 1540483200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 10, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, '堀 拓也', NULL, 'JP1983073731A | JP2003051418A | JP2011049440A | WO2013002376A1', NULL, NULL, 1, '\\20220510\\b4374da5c77147349e0cf335c15325e4.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39915, 39917, 39916, 2);
INSERT INTO `os_patent` VALUES (23376, 'R-T-B系合金粉末およびR-T-B系焼結磁石', 'R-T-B型合金粉末和R-T-B型烧结磁铁', 'JP6432406B2', '【課題】  磁気特性に優れた磁石の作製に用いられる合金粉末を提供する。\n\n【解決手段】  粒子の表面が、Nd、Pr、Dy、Tbのうちの少なくとも1種以上の希土類元素を含むR濃縮層で覆われており、前記R濃縮層における希土類元素は20原子%以上32原子%以下の範囲にあるR-T-B系合金粉末である。\n\n【選択図】図1', '提供了一种用于制造磁性优异的磁体的合金粉末。\n\n颗粒的表面覆盖有含有Nd,Pr,Dy和Tb的至少一个或多个稀土元素的r-浓缩层,并且r浓缩层中的稀土元素为20或更高,32℃是RTB的合金粉末在原子%或更小的范围内。\n\n图1', 'JP2015057079', 1426780800, 'JP6432406B2', 1543939200, 1446652800, NULL, 1542297600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 17, 1, 0, 0, 0, NULL, NULL, NULL, '2014065861', 'JP', 1395849600, 4, 4, NULL, NULL, 12, 0, 0, 0, 0, NULL, NULL, NULL, '藤長 千香子', NULL, 'CN101499346A | JP1992345002A | JP1993258928A | JP1994158238A | JP2000129304A | JP2007270163A | JP2008231535A | JP2013197240A | JP2013243346A | WO2005031023A1 | WO2011004894A1 | WO2013114892A1', NULL, NULL, 1, '\\20220510\\36f6add571b0496581fec418736efe6a.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 39918, 39920, 39919, 4);
INSERT INTO `os_patent` VALUES (23377, 'R-T-B-based alloy powder and method for producing same, and R-T-B-based sintered magnet and method for producing same', 'R-T-B基合金粉末及其制造方法、R-T-B基烧结磁体及其制造方法', 'US10020100B2', 'A method is provided for producing an R-T-B based alloy powder. The method includes providing an alloy powder containing 27.5 to 36.0 mass % of R, where R is at least one among the rare-earth elements and always includes at least one of Nd and Pr, 0.85 to 1.05 mass % of B, 0.1 to 2.5 mass % of element M (Al, Ti, V, Cr, Mn, Ni, Cu, Zn, Ga, Zr, Nb, Mo, Ag, In, Sn, Hf, Ta, W, Pb and/or Bi), and a balance T, where T is Fe or is Fe and Co; and pulverizing the powder by introducing the powder and a pulverization gas in a pulverization chamber. The pulverization includes attrition while circulating the alloy powder with a flow of the pulverization gas in the pulverization chamber. The pulverization gas has a gauge pressure of 0.75 MPa or more, and the residence time is 6 minutes or more.', '提供一种生产R-T-B基合金粉末的方法。该方法包括提供含有27.5至36.0质量％的R的合金粉末，其中R是稀土元素中的至少一种并且总是包括Nd和Pr中的至少一种，0.85至1.05质量％的B，0.1至2.5。元素M的质量％（Al，Ti，V，Cr，Mn，Ni，Cu，Zn，Ga，Zr，Nb，Mo，Ag，In，Sn，Hf，Ta，W，Pb和/或Bi），和平衡T，其中T是Fe或是Fe和Co;通过在粉碎室中引入粉末和粉碎气体来粉碎粉末。粉碎包括在粉碎室中用粉碎气体流循环合金粉末的同时进行磨损。粉碎气体的表压为0.75MPa或更高，停留时间为6分钟或更长。', 'US15/128137', 1427040000, 'US10020100B2', 1531152000, 1491408000, NULL, 1531152000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, '2014065851', 'JP', 1395849600, 10, 10, NULL, NULL, 15, 0, 0, 0, 1, NULL, '869', NULL, 'WYSZOMIERSKI, GEORGE', NULL, 'EP1154444A1 | JP1989180160A | JP1995047794A | JP1996269801A | JP1998318566A | JP2004256686A | JP2004341282A | JP2009093773A | US20040079449A1 | US20040177899A1 | US20050067058A1 | US20110025440A1 | US20110262297A1 | US20140328711A1 | US5858123A', NULL, 'Official Communication issued in International Patent Application No. PCT/JP2015/058686, dated Jun. 9, 2015. cited by applicant.', 1, '\\20220510\\aa371ac5eb3449389ea1d2722eeca6c7.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39921, 39923, 39922, 10);
INSERT INTO `os_patent` VALUES (23378, 'R-T-B系合金粉末の製造方法およびR-T-B系焼結磁石の製造方法', 'RTB基合金粉末的制造方法和RTB系烧结磁铁的制造方法', 'JP6481682B2', '27.5質量%以上36.0質量%以下のR(Rは希土類元素のうちの少なくとも1種でありNdおよびPrのいずれか1種を必ず含む)、0.85質量%以上1.05質量%以下のB(ホウ素)、0.1質量%以上2.5質量%以下の元素M(Mは、Al、Ti、V、Cr、Mn、Ni、Cu、Zn、Ga、Zr、Nb、Mo、Ag、In、Sn、Hf、Ta、W、Pb、およびBiからなる群から選択された少なくとも1種)、残部T(TはFeまたはFeとCo)からなり、かつ、粒子を2次元に投影した輪郭形状において、長径a、短径bからその比をa/bとし、周囲長L、円相当径d(同じ面積を有する円の直径)からその比をL/dとしたとき、L/d≦5.39-1.07(a/b)の条件を満たす粉末が20%以上含まれているR-T-B系合金粉末。', 'R（R是稀土元素中的至少一种，并且总是包含Nd和Pr中的任一种），0.85质量％以上且1.05质量％以下B（硼），27.5质量％以上且36.0质量％以下，元素M的0.1~2.5质量％（M为Al，Ti，V，Cr，Mn，Ni，Cu，Zn，Ga，Zr，Nb，Mo，Ag，In，Sn，Hf，Ta，W ，Pb和Bi），平衡T（T是Fe或Fe和Co），并且通过在二维中投射粒子获得的轮廓形状，长轴a，短轴b假设比率为a / b且周长为L且圆当量直径d（具有相同面积的圆的直径）为L / d，则L/d≤5.39-1.07（a / b）含有20％或更多粉末的RTB合金粉末满足条件。', 'JP2016510325', 1427040000, 'JP6481682B2', 1552406400, 1492012800, NULL, 1550764800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 0, 1, 0, 0, 0, NULL, NULL, NULL, '2014065851', 'JP', 1395849600, 10, 10, NULL, NULL, 9, 0, 0, 0, 0, NULL, NULL, NULL, '秋山 直人', NULL, 'JP1988004001A | JP1995074012A | JP1996148315A | JP1997143514A | JP2003049204A | JP2003138335A | JP2007266038A | JPWO2009122709A1 | JPWO2010082492A1', NULL, NULL, 1, '\\20220510\\718b9eaf9ccd4dbe9421b159939d47c6.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39921, 39923, 39922, 10);
INSERT INTO `os_patent` VALUES (23379, 'R-T-B系焼結磁石', 'R-T-B系焼结磁石', 'JP6507769B2', '【課題】B量の変化に対するHcJの変化が少なく、かつ高いBrと高いHcJを有するR-T-B系焼結磁石を提供する。\n\n【解決手段】下記式(1)で示される組成が、下記式(2)~(9)を満足し、\n\nuRwBxGazAlvCoqTigFejM  (1)  29.0≦u≦32.0    (2)  0.93≦w≦1.00  (3)  0.3≦x≦0.8  (4)  0.05≦z≦0.5  (5)  0≦v≦3.0  (6)  0.15≦q≦0.28  (7)  60.22≦g≦69.47(8)  0≦j≦1.2  (9)\n\ng’、v’、z’、w’、q’としたときに下記式(A)および(B)を満足することを特徴とする、R-T-B系焼結磁石。0.06≦(g’+ v’+z’)-(14×(w’-2×q’))    (A)0.10≧(g’+ v’+z’)-(14×(w’-q’))    (B)\n\n【選択図】図1', '要改变B卷H的物体cJB有很少的变化。r和高H.cJ提供基于R-T-B基烧结磁体。\n\n溶液:下式(1)中所示的组合物满足以下式(2)至(9),\n\nUrwbxgazalvcoqtigfejm(1)29.0≤u≤32.0(2)0.93≤w≤1.00(3)0.3≤x≤0.8(4)0.05≤z≤0.5(5)0≤v≤3.0(6)0.15≤q≤0.28( 7)60.22≤g≤69.47(8)0≤J≤1.2(9)\n\n一种基于R-B基的烧结磁体,其特征在于满足以下公式(a)和(b),当满足g\',v\',z\',w\'和q\'时。0.06≤(g\'+ v\'+ z\') - (14×(w\'-2×q\'))(a)0.10‰(g\'+ v\'+ z\') - (14×(w\'-q \')(b)\n\n图1', 'JP2015060748', 1427126400, 'JP6507769B2', 1557244800, 1473264000, NULL, 1554998400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 21, 4, 0, 0, 0, NULL, NULL, NULL, '2014198073 | 2014241224 | 2015038689', 'JP | JP | JP', 1411920000, 2, 9, NULL, NULL, 5, 2, 2, 2, 0, NULL, NULL, NULL, '田中 崇大', NULL, 'JP2008264875A | US4919732A | WO2010073533A1 | WO2013008756A1 | WO2013191276A1', 'CN110993232A | CN110993232B', NULL, 1, '\\20220510\\3083bd783b424446a3c0fb472ae3b7fe.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39924, 39914, 39913, 9);
INSERT INTO `os_patent` VALUES (23380, 'R-T-B系焼結磁石の製造方法', 'R-T-B基烧结磁体的制备方法', 'JP6108029B2', '式uRwBxGayCuzAlqM(100-u-w-x-y-z-q)Tによって表され、前記RHはR-T-B系焼結磁石の5質量%以下であり、29.5≦u≦32.0、0.86≦w≦0.93、0.2≦x≦1.0、0.3≦y≦1.0、0.05≦z≦0.5、0≦q≦0.1であり、かつ、p=[B]/10.811×14-[Fe]/55.847-[Co]/58.933のとき、p<0の関係を満足するR-T-B系焼結磁石素材を準備する工程と、前記R-T-B系焼結磁石素材を450℃以上470℃以下の温度で4時間以上12時間以下加熱する熱処理工程と、を含むR-T-B系焼結磁石の製造方法である。', '由式Urwbxgaycuzal QM(100-UWXYZQ)T表示,RH为5质量%以下,基于RTB的烧结磁体,29.5≤u≤32.0,0.86≤W≤0.93,0.2≤x≤1.0,0.3 ≤y≤.1.0,0.05≤z≤0.5,0≤q≤0.1,并且p = [b] / 10.811114- [Fe] / 55.847- [Co] / 58.933满足P <0的制备方法的关系基于烧结磁体材料和热处理步骤,其中RTB的烧结磁体材料在450℃以上温度为450℃或更高,470℃或更小4小时或更长时间或更少或更少制备包括基于RTB的烧结磁体,包括它是一种方法。', 'JP2016510423', 1427212800, 'JP6108029B2', 1491321600, 1491321600, NULL, 1489680000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 22, 1, 0, 0, 0, NULL, NULL, NULL, '2014063451', 'JP', 1395763200, 9, 9, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, '右田 勝則', NULL, 'JP2003510467A | WO2013008756A1 | WO2013191276A1 | WO2014157448A1', NULL, NULL, 1, '\\20220510\\7c083bb1e7e7479f986ccff8be84a1a2.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39925, 39927, 39926, 9);
INSERT INTO `os_patent` VALUES (23381, 'Method for manufacturing R-T-B based sintered magnet', 'R-T-B系烧结磁铁的制造方法', 'US9972435B2', 'Disclosed is a method for manufacturing an R-T-B based sintered magnet, which includes the steps of: preparing an R-T-B based sintered magnet material; and performing a heat treatment by heating the R-T-B based sintered magnet material at a temperature of 450° C. or higher and 470° C. or lower for 4 hours or more and 12 hours or less, wherein the R-T-B based sintered magnet material is represented by the formula of: uRwBxGayCuzAlqM (100−u−w−x−y−z−q) T, the content of RH is 5% or less by mass in the R-T-B based sintered magnet, 29.5≤u≤32.0, 0.86≤w≤0.93, 0.2≤x≤1.0, 0.3≤y≤1.0, 0.05≤z≤0.5, 0≤q≤0.1, and a relationship of p&#x3c;0 is satisfied when p=[B]/10.811×14−[Fe]/55.847−[Co]/58.933.', '本发明公开了一种制造R-T-B基烧结磁体的方法，包括以下步骤：制备R-T-B基烧结磁体材料;通过在450℃或更高和470℃或更低的温度下加热RTB基烧结磁体材料4小时或更长和12小时或更短来进行热处理，其中RTB基烧结磁体材料被表示通过以下公式：uRwBxGayCuzAlqM（100-u-w-x-y-z-q）T，在RTB基烧结磁体中RH的含量为5质量％或更低，29.5≤u≤32.0,0.86≤w当p = [B]/10.811×14-时，≤0.93,0.2≤x≤1.0,0.3≤y≤1.0,0.05≤z≤0.5,0≤q≤0.1，并且满足p＆＃x3c; 0的关系铁] /55.847- [CO] /58.933。', 'US15/128612', 1427212800, 'US9972435B2', 1526313600, 1493222400, NULL, 1526313600, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 19, 1, 0, 0, 0, NULL, NULL, NULL, '2014063451', 'JP', 1395763200, 9, 9, NULL, NULL, 16, 0, 0, 0, 8, NULL, '870', NULL, 'YANG, JIE', NULL, 'CN102903471A | EP2650887A2 | JP1997055310A | JP1999021932A | JP2003510467A | JP2010097243A | JP2016158786A | US20110171056A1 | US20140132377A1 | US20150170810A1 | US5858124A | US6797081B2 | US8361242B2 | WO2001024203A1 | WO2013008756A1 | WO2013191276A1', NULL, 'Cheng et al., \"The magnetic properties, thermal stability and microstructure of Nd--Fe--B/Ga sintered magnets prepared by blending method\", Journal of Magnetism and Magnetic Materials, 2001, vol. 234, No. 2, pp. 274-278 (total 6 pages). cited by applicant | Communication dated Mar. 20, 2017 from the State Intellectual Property Office of the P.R.C. in corresponding Chinese application No. 201580009812.5. cited by applicant | Communication dated May 31, 2017 from the German Patent and Trademark Office in corresponding German Application No. 11 2015 001405.5. cited by applicant. | International Preliminary Report on Patentability with translation of Written Opinion dated Oct. 6, 2016, issued by the International Searching Authority in Application No. PCT/JP2015/059117. cited by applicant | International Search Report for PCT/JP2015/059117 dated May 26, 2015 [PCT/ISA/210]. cited by applicant | Ragg et al., \"A study of the effects of the addition of various amounts of Cu to sintered Nd--Fe--B magnets\", Journal of Alloys and Compounds, 1997, vol. 256, Nos. 1-2, pp. 252-257. cited by applicant | Written Opinion for PCT/JP2015/059117 dated May 26, 2015 [PCT/ISA/237]. | Written Opinion for PCT/JP2015/059117 dated May 26, 2015 [PCT/ISA/237]. cited by applicant', 1, '\\20220510\\5c0d9a45fdb943d2be668c18d78ad281.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39925, 39927, 39926, 9);
INSERT INTO `os_patent` VALUES (23382, 'Verfahren zum Herstellen eines R-T-B-basierten Sintermagneten', '一种制造R-T-B基烧结磁体的方法', 'DE112015001405B4', 'Verfahren zum Herstellen eines R-T-B-basierten Sintermagneten, mit den Schritten: \n\nHerstellen eines R-T-B-basierten Sintermagnetmaterials; und \n\nDurchführen einer Wärmebehandlung durch Erhitzen des R-T-B-basierten Sintermagnetmaterials auf eine Temperatur von 450°C oder höher und 470°C oder niedriger für 4 Stunden oder mehr und 12 Stunden oder weniger, wobei: das R-T-B-basierte Sintermagnetmaterial dargestellt wird durch die Formel: uRwBxGayCuzAlqM (100 - u - w - x - y - z - q) T (wobei R zusammengesetzt ist aus einem leichten Seltenerdelement RL und einem schweren Seltenerdelement RH, worin RL Nd und/oder Pr ist und RH wenigstens ein Element von Dy, Tb, Gd und Ho ist; T ein Übergangsmetallelement ist, welches unbedingt Fe beinhaltet; und M Nb und/oder Zr ist, und u, w, x, y, z, q und 100 - u - w - x- y- z- q in Masseprozent ausgedrückt sind), \n\nder Gehalt an RH in dem R-T-B-basierten Sintermagneten RH 5 Masse% oder \n\nweniger ist, \n\n \n\n  \n\n  \n\n   29,5\n\n   \n\n  \n\n   ≤\n\n   \n\n  \n\n   u\n\n   \n\n  \n\n   ≤\n\n   \n\n  \n\n   32,0,\n\n   \n\n  \n\n\n\n \n\n \n\n  \n\n  \n\n   0,86\n\n   \n\n  \n\n   ≤\n\n   \n\n  \n\n   w\n\n   \n\n  \n\n   ≤\n\n   \n\n  \n\n   0,93,\n\n   \n\n  \n\n\n\n \n\n \n\n  \n\n  \n\n   0,2\n\n   \n\n  \n\n   ≤\n\n   \n\n  \n\n   x\n\n   \n\n  \n\n   ≤\n\n   \n\n  \n\n   1,0,\n\n   \n\n  \n\n\n\n \n\n \n\n  \n\n  \n\n   0,3\n\n   \n\n  \n\n   ≤\n\n   \n\n  \n\n   y\n\n   \n\n  \n\n   ≤\n\n   \n\n  \n\n   1,0,\n\n   \n\n  \n\n\n\n \n\n \n\n  \n\n  \n\n   0,05\n\n   \n\n  \n\n   ≤\n\n   \n\n  \n\n   z\n\n   \n\n  \n\n   ≤\n\n   \n\n  \n\n   0,5,\n\n   \n\n  \n\n\n\n \n\n \n\n  \n\n  \n\n   0\n\n   \n\n  \n\n   ≤\n\n   \n\n  \n\n   q\n\n   \n\n  \n\n   ≤\n\n   \n\n  \n\n   0,1,\n\n   \n\n  \n\n\n\nund \n\neine Beziehung p < 0 erfüllt ist, wenn p = [B]/10,811 ×14 - [Fe]/55,847 - [Co]/58,933 ist (wobei [B], [Fe], und [Co] die jeweiligen Gehalte von B, Fe, und Co in Masseprozent sind).', '用于制造的R-T-B烧结磁体,具有如下步骤:\n\n一种R-T-B烧结磁材料;和\n\n通过加热进行热处理RTB基烧结磁性材料的450℃或更高和470℃的温度或降低4小时以上12小时以下,其中:所述RTB系烧结磁性材料被表示由式:UrwbxGayCuzalQM(100 - U - W - XY - z - Q)T(其中,R是由轻稀土元素RL和重稀土类元素RH,其中,RL ND和/或PR是和Rh在DY,TB,DG和HO的至少一个元件是绝对包含Fe的过渡金属元素;并且M NB和/或Zr是,与U,W,X,Y,Z,Q和100 - U - W - XYZQ质量百分比表示)\n\nRH的在基于R-T-B-烧结磁体RH 5质量%的内容或\n\n少\n\n  \n\n     \n\n      \n\n 29,5   \n\n      \n\n      \n\n ≤   \n\n      \n\n      \n\n u   \n\n      \n\n      \n\n ≤   \n\n      \n\n      \n\n 32,0,   \n\n      \n\n    \n\n\n\n\n\n  \n\n     \n\n      \n\n 0,86   \n\n      \n\n      \n\n ≤   \n\n      \n\n      \n\n w   \n\n      \n\n      \n\n ≤   \n\n      \n\n      \n\n 0,93,   \n\n      \n\n    \n\n\n\n\n\n  \n\n     \n\n      \n\n 0,2   \n\n      \n\n      \n\n ≤   \n\n      \n\n      \n\n x   \n\n      \n\n      \n\n ≤   \n\n      \n\n      \n\n 1,0,   \n\n      \n\n    \n\n\n\n\n\n  \n\n     \n\n      \n\n 0,3   \n\n      \n\n      \n\n ≤   \n\n      \n\n      \n\n y   \n\n      \n\n      \n\n ≤   \n\n      \n\n      \n\n 1,0,   \n\n      \n\n    \n\n\n\n\n\n  \n\n     \n\n      \n\n 0,05   \n\n      \n\n      \n\n ≤   \n\n      \n\n      \n\n z   \n\n      \n\n      \n\n ≤   \n\n      \n\n      \n\n 0,5,   \n\n      \n\n    \n\n\n\n\n\n  \n\n     \n\n      \n\n 0   \n\n      \n\n      \n\n ≤   \n\n      \n\n      \n\n q   \n\n      \n\n      \n\n ≤   \n\n      \n\n      \n\n 0,1,   \n\n      \n\n    \n\n\n\n和\n\n的关系P <0成立时P = [B] / 10811×14 - [铁] / 55847 - [CO] / 58933(其中,[B],[铁]和[CO]的B的各自的含量,铁和Co是质量%)。', 'DE112015001405', 1427212800, 'DE112015001405B4', 1532534400, 1482336000, NULL, 1532534400, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B4', NULL, NULL, 31, 1, 0, 0, 0, NULL, NULL, NULL, '2014063451', 'JP', 1395763200, 9, 9, NULL, NULL, 2, 0, 0, 0, 2, NULL, '895', NULL, NULL, NULL, 'DE112012002150T5 | EP2650887A2', NULL, 'CHENG, Wen-Hao. [et al.]: The magnetic properties, thermal stability and microstructure of Nd–Fe–B/Ga sintered magnets prepared by blending method. Journal of Magnetism and Magnetic Materials, Vol. 234, 2001, No. 2, S. 274 - 278. Sciencedirect [online]. DOI: 10.1016/S0304-8853(01)00387-0, In: Sciencedirect | RAGG, O.M., Harris, I.R.: A study of the effects of the addition of various amounts of Cu to sintered Nd-Fe-B magnets. Journal of Alloys and Compounds, Vol. 256, 1997, No. 1-2, S. 252-257. Sciencedirect [online]. DOI: 10.1016/S0925-8388(96)02962-3, In: Sciencedirect', 1, '\\20220510\\5275db4643f6404b840d4bdec866a278.png', NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 39925, 39927, 39926, 9);
INSERT INTO `os_patent` VALUES (23383, 'PHƯƠNG PHÁP THU HỒI NGUYÊN TỐ ĐẤT HIẾM', '稀有金属回收方法', 'VN50180A', 'Sáng chế đề xuất phương pháp thu hồi nguyên tố đất hiếm bao gồm các bước: xử lý oxy hóa phôi gia công chứa ít nhất một nguyên tố đất hiếm và nguyên tố nhóm sắt, tiếp đó chuyển đổi môi trường xử lý sang môi trường có cacbon, và xử lý nhiệt phôi gia công đã xử lý oxy hóa, nhờ đó tách nguyên tố đất hiếm ở dạng oxit ra khỏi nguyên tố nhóm sắt, theo đó oxit của một nguyên tố đất hiếm có thể được tách một cách hiệu quả ra khỏi nguyên tố nhóm sắt với chi phí xử lý thấp, và cả sự mài mòn và hư hại với thùng xử lý có thể được ngăn chặn để cho phép thùng được sử dụng lặp đi lặp lại trong thời gian dài. Phương pháp theo sáng chế khác biệt ở chỗ phôi gia công đã xử lý oxy hóa được trộn với cốc dầu mỏ dưới dạng nguồn cấp cacbon, được đưa vào trong thùng xứ lý, và tiếp đó được xử lý nhiệt trong môi trường khí trơ hoặc trong chân không ở nhiệt độ nằm trong khoảng từ 950oC đến 1 150oC (ngoại trừ 1150oC).', '本发明提出一种回收稀土元素的方法，包括以下步骤：处理含有至少一种稀土元素和铁元素的工件的氧化，然后将处理介质转化为其中的环境。碳和热处理的氧化工件，从而将氧化物形式的稀土元素与铁元素分离，从而可以有效地分离稀土元素的氧化物。铁元素与铁组可以防止低处理成本，以及对处理槽的磨损和损坏，以允许容器长时间重复使用。本发明的方法的不同之处在于，氧化处理的工件与碳源形式的石油焦混合，将其引入处理槽，然后在惰性气体中进行热处理或在真空中，温度在950oC和150oC之间（除了1150℃）。', 'VN1201604108', 1427299200, 'VN50180A', 1482681600, 1482681600, NULL, NULL, '越南', NULL, NULL, NULL, NULL, 8, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 34, 2, 0, 0, 0, NULL, NULL, NULL, '2014067762 | 2014109600', 'JP | JP', 1395936000, 7, 11, NULL, NULL, 0, 0, 0, 0, 0, NULL, '897', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39928, 39857, 39856, 11);
INSERT INTO `os_patent` VALUES (23384, '希土類元素の回収方法', '回收稀土元素的方法', 'JP6413877B2', '【課題】 少なくとも希土類元素と鉄族元素を含む処理対象物に対して酸化処理を行った後、処理環境を炭素の存在下に移して熱処理することで、希土類元素を酸化物として鉄族元素から分離して回収する方法において、低処理コストで、効率よく希土類元素の酸化物を鉄族元素から分離することができるとともに、処理容器をその消耗や損傷を抑制して長期に亘って繰り返し用いることができる方法を提供すること。\n\n【解決手段】 酸化処理を行った処理対象物を炭素供給源としての石油コークスと混合して処理容器に収容し、不活性ガス雰囲気中または真空中において950℃〜1150℃(ただし1150℃を除く)の温度で熱処理することを特徴とする。\n\n【選択図】 図1', '要解决的问题:对含有至少稀土元素和铁基的加工靶进行氧化处理,将加工环境转移到存在碳和热处理稀土元素作为稀土的氧化物元素。在分离和回收的方法中,在低处理成本下,稀土元素的氧化物可以通过铁组元素有效地分离,并且通过抑制它们的消耗和损坏提供了一种方法,可以重复使用它们的加工容器可以做到。\n\nSolutismors Solutemmiszure SolutieeMovee Suembollice在oviolmonment中,其中用石油焦炭作为碳源进行氧化处理并容纳在处理容器中,并在惰性气体气氛中或真空(1150℃除外),其特征在于热处理温度)。\n\n图1', 'JP2015064335', 1427299200, 'JP6413877B2', 1540915200, 1446652800, NULL, 1539273600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 2, 0, 0, 0, NULL, NULL, NULL, '2014067762', 'JP', 1395936000, 2, 11, NULL, NULL, 8, 0, 0, 0, 0, NULL, NULL, NULL, '荒木 英則', NULL, 'CN103160864A | JP2004091811A | JP2005002463A | JP2009249674A | JP2012041588A | WO2010098381A1 | WO2013018710A1 | WO2014104205A1', NULL, NULL, 1, '\\20220510\\5919d90049db464fa311ea5c38e73e3f.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39929, 39857, 39856, 11);
INSERT INTO `os_patent` VALUES (23385, 'R-T-B系焼結磁石の製造方法', '制造R-T-B基烧结磁体的方法', 'JP6443757B2', '【課題】Dyなどの重希土類元素の使用量を少なくし、且つ、単一合金から作製する場合と比べてBrの低下を抑制しつつ高いHcJを有するR-T-B系焼結磁石の製造方法の提供。\n\n【解決手段】主合金粉末と添加合金粉末とを混合した後、成形、焼結、熱処理する方法によって、特定の範囲で、R、B、Ga、Cu、Al及び必要に応じてMを含有させた、R-T-B系焼結磁石の製造方法であって、添加合金粉末を、R中のDy及び/又はTbの質量比率を主合金粉末よりも高くし、かつ特定の範囲とし、B量をR2T14B型化合物の化学量論比のB量よりも少なくし、かつ特定の範囲とし、さらにその上で、R、T、B、Gaを特定の範囲にする。\n\n【選択図】なし', '本发明的目的是减少重稀土元素使用量,例如Dy,并将其与单个合金进行比较r高h以抑制衰落cJ由生产R-T-B基烧结磁体的方法提供。\n\n溶液:混合主取向粉末和添加剂合金粉末后,通过模塑,烧结和热处理,可以在特定范围内含有M.在制造基于RTB的烧结磁体的方法中, R中的Dy和/或Tb的质量比高于主栅极粉末,而量B的量是高度的。2T.14它降低了比B量的量的B型化合物的量,并且在特定范围内,并且更多,R,T,B和Ga在特定范围内。\n\n[选择图]无', 'JP2015064730', 1427299200, 'JP6443757B2', 1545753600, 1476892800, NULL, 1544112000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '右田 勝則', NULL, 'JP1993021218A | JP2000188213A | JP2000503809A | JP2000503811A | WO2013008756A1 | WO2015020180A1 | WO2015020181A1', NULL, NULL, 1, '\\20220510\\714f04e01ad84a44bc12956a2ceed7f8.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 39930, 39932, 39931, 2);
INSERT INTO `os_patent` VALUES (23386, 'Method for recovering rare earth element', '回收稀土元素的方法', 'US10316393B2', 'An object of the present invention is to provide a method for recovering a rare earth element, including subjecting a workpiece containing at least a rare earth element and an iron group element to an oxidation treatment, then turning the treatment environment into an environment where carbon is present, and subjecting an oxidation-treated workpiece to a heat treatment, thereby separating a rare earth element in the form of an oxide from an iron group element, according to which an oxide of a rare earth element can be efficiently separated from an iron group element at low treatment cost, and also wear and damage to the treatment container can be suppressed to allow the container to be used repeatedly for a long period of time. The method of the present invention as a means for resolution is characterized in that the oxidation-treated workpiece is mixed with petroleum coke as a carbon supply source, placed in a treatment container, and then subjected to the heat treatment in an inert gas atmosphere or in vacuum at a temperature of 950° C. to 1150° C. (excluding 1150° C.).', '本发明的一个目的是提供一种回收稀土元素的方法，包括对含有至少稀土元素和铁族元素的工件进行氧化处理，然后将处理环境转变为碳为碳的环境。将氧化处理过的工件进行热处理，从而将铁氧化物形式的稀土元素与铁族元素分离，从而可以有效地从铁族中分离出稀土元素的氧化物在处理成本低的情况下，可以抑制处理容器的磨损和损坏，使容器可以长时间反复使用。作为拆分手段的本发明方法的特征在于，将经氧化处理的工件与作为碳供应源的石油焦混合，置于处理容器中，然后在惰性气体气氛中进行热处理或在真空中在950℃至1150℃的温度下（不包括1150℃）。', 'US15/129101', 1427299200, 'US10316393B2', 1560182400, 1495036800, NULL, 1560182400, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 0, 2, 0, 0, 0, NULL, NULL, NULL, '2014067762 | 2014109600', 'JP | JP', 1395936000, 7, 11, NULL, NULL, 15, 0, 0, 0, 5, NULL, '875', NULL, 'WYSZOMIERSKI, GEORGE', NULL, 'CN102181643A | CN102325911A | CN103160864A | CN1071205A | JP2004091811A | JP2005002463A | JP2012041588A | RU2020175C1 | US20060032327A1 | US20110070118A1 | US20120237769A1 | US9322082B2 | WO2010098381A1 | WO2013018710A1 | WO2014104205A1', NULL, 'Chinese First Office Action for counterpart Chinese Patent Application No. 201580016947.4 dated Dec. 7, 2017 (6 Sheets). cited by applicant | Extended European Search Report for counterpart EPC Patent Application No. 15770282.0 dated Oct. 24, 2017 (7 Sheets). cited by applicant. | International Search Report for International Application No. PCT/JP2015/059413 dated Jun. 23, 2015. cited by applicant | U.S. Appl. No. 14/893,611 by Hiroyuki Hoshi, et al., filed Nov. 24, 2015 (48 Pages). | US. Appl. No. 14/893,611 by Hiroyuki Hoshi, et al., filed Nov. 24, 2015 (48 Pages). cited by applicant', 1, '\\20220510\\ff917bc3c5a74d3cb766c562d9177c08.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39928, 39857, 39856, 11);
INSERT INTO `os_patent` VALUES (23387, '拡散処理装置およびそれを用いたR-T-B系焼結磁石の製造方法', '扩散处理装置及使用其的R-T-B基烧结磁体的制造方法', 'JP6432418B2', '【課題】従来の製造装置よりも高い量産効率で拡散処理を行うことが可能な拡散処理装置およびR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】R-T-B系焼結磁石片と、DyまたはTbを含む重希土類元素RHを含むRH拡散源とを受容する処理空間24Sを画定する円筒状の第1壁部24と、処理空間を長さ方向に延びる3つの処理室24Sa、24Sb、24Scに分割する3つの仕切り壁26と、処理空間の長さ方向の一端に設けられ、3つの処理室24Sa、24Sb、24Scにそれぞれが対応するよう配置された3つの第1開口部を有する第1蓋と、処理空間の長さ方向の他端に設けられ、3つの処理室24Sa、24Sb、24Scにそれぞれが対応するよう配置された3つの第2開口部を有する第2蓋と備え、傾斜可能および回転可能に支持された拡散炉と、第1壁部24の外側に設けられたヒーターとを有する。\n\n【選択図】図2', '本发明的一个目的是提供一种用于制造扩散处理装置和基于R-T-B基烧结磁体的方法,该烧结磁体能够以高于传统制造装置的质量到生产效率进行扩散处理。\n\n限定处理空间24的圆柱形第一壁部分24,用于接收处理空间24s,该处理空间24s接收接收基于RTB的烧结磁件的处理空间24和包括My或Tb的重型稀土元素RH,并且处理长度。三个分隔壁26分为三个处理室24SA,24SB,24SC,在第一盖子的方向上延伸,其具有三个布置的第一开口和纵向的处理空间的另一端,以及三个加工腔室24SA,24SB和24SC布置成响应每个。具有2个开口的第二盖子设置有扩散炉和可旋转的支撑的扩散炉和设置在第一壁部分24的外部的加热器。\n\n图2.', 'JP2015068831', 1427644800, 'JP6432418B2', 1543939200, 1478188800, NULL, 1542297600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '田中 崇大', NULL, 'JP2012204696A | WO2007102391A1 | WO2011007758A1 | WO2012008416A1 | WO2013108830A1', NULL, NULL, 1, '\\20220510\\1e18888c4fe14b198f518459dd4676dd.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 39933, 39935, 39934, 2);
INSERT INTO `os_patent` VALUES (23388, 'R-T-B系焼結磁石の製造方法', '制造R-T-B基烧结磁体的方法', 'JP6443179B2', '【課題】割れ、欠けの発生を抑制した重希土類元素RHを表面から内部に拡散させるR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】R-T-B系焼結磁石素材1を準備する工程と、重希土類元素RH及びFeを含有するRH拡散源2を準備する工程と、回転可能に支持された処理室3内に、焼結磁石素材、RH拡散源及び攪拌補助部材30を装入する工程と、回転する処理室内において、焼結磁石素材及びRH拡散源を800℃以上1000℃以下の処理温度に加熱するRH拡散工程とを包含する。各焼結磁石素材は、1000mm3以上の体積を有し、直交する3方向における3つのサイズの最大のサイズが最小のサイズの2倍以上である。各RH拡散源は、3mm以下のサイズを有する。攪拌補助部材は、各々が4mm以上10mm以下の直径を有する複数の第1球体と、各々が1.5mm以上3.5mm以下の直径を有する複数の第2球体とを含む。\n\n【選択図】図2', '本发明的一个目的是提供一种用于制造基于R-T-B基烧结磁体的方法,该烧结磁体从表面扩散到重稀土元素RH的内部,其中抑制了裂缝和短缺的发生。\n\n溶液:制备基于RTB的烧结磁体材料1的步骤和制备含有重稀土元素RH和Fe的RH扩散源2的步骤,以及可旋转地支撑的处理室3对磁体材料充电的步骤, rh扩散源和搅拌辅助构件30,以及将烧结磁体材料和Rh扩散源加热到800℃或更高的处理温度和1000℃或更低的RH扩散步骤。包括。每个烧结磁体材料为1000毫米3上述体积具有上述,并且在正交三个方向上的三个尺寸的最大尺寸大于最小尺寸的两倍多。每个RH扩散源的尺寸为3mm或更小。搅拌辅助构件包括具有直径为4mm或更大且10mm或更小的直径的多个第一球体,以及直径为1.5mm或更大和3.5mm或更小的多个第二球体。\n\n图2.', 'JP2015069399', 1427644800, 'JP6443179B2', 1545753600, 1478188800, NULL, 1544112000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 27, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 8, 0, 0, 0, 0, NULL, NULL, NULL, '右田 勝則', NULL, 'JP1988107737U | JP2004296973A | JP2009289994A | JP2014072259A | WO2007102391A1 | WO2011007758A1 | WO2012008426A1 | WO2013108830A1', NULL, NULL, 1, '\\20220510\\6f61cfc265884691b95adb701759f38f.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 39936, 39938, 39937, 4);
INSERT INTO `os_patent` VALUES (23389, 'プレス装置および磁石の製造方法', '压制设备和制造磁铁的方法', 'JP6477143B2', '【課題】円柱形状などの棒状の成形体の成形における亀裂発生の抑制。\n\n【解決手段】ダイス22の貫通孔22aは、長さLd及び幅Wd(Ld>Wd)を有する成形部と、成形部の上側に形成されたテーパー部22tL、22tWとを有し、最上端長さLは、Ldより2×Ls大きく、最上端幅Wは、Wdと等しいか又はWdより2×Ws大きく、テーパー部22tLの幅方向の一方の端辺の最上端と成形部の長さ方向における差をLs1、他方の端辺の最上端と成形部の長さ方向における差をLs2、テーパー部22tWの長さ方向の一方の端辺の最上端と成形部の幅方向の差をWs1、他方の端片の最上端と成形部の幅方向における差をWs2とすると、Ls1+Ls2=2×Ls、Ws1+Ws2=2×Wsであって、Ls1+Ls2はWs1+Ws2より大きい。\n\n【選択図】図1', '要解决的问题:抑制圆柱形状的杆状模制品的模制中的裂缝产生。\n\n溶液:管芯22的通孔22a具有具有长度LD的模制部分和宽度Wd(Ld> Wd),以及形成在模制部分的上侧的锥形部分22t1,以及顶端长度。LD LD为2×L大于LD,最大端宽W等于WD或2×WS大于WD,锥形部分22T1的一端侧的一端侧的顶端和长度的长度成型部分LS1的方向,模制部分的纵向方向的差异,模制件的长度方向的差异,以及模制件的宽度方向的宽度方向在锥形部分22TW的纵向方向上的横向方向。假设其他另一个和成形部分的宽度方向之间的差异为WS2,LS1 + LS2 = 2×LS,LS1 + LS2大于WS1 + WS2 。\n\n图1', 'JP2015068348', 1427644800, 'JP6477143B2', 1551801600, 1478188800, NULL, 1550160000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 0, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 9, 0, 0, 0, 0, NULL, NULL, NULL, '藤長 千香子', NULL, 'JP1977102885A | JP1978018066A | JP1984166601A | JP2000197997A | JP2001300790A | JP2005240060A | JP2006097090A | JP2006207002A | JP2007254813A', NULL, NULL, 1, '\\20220510\\b9f2aa76e5874d1c9bdba6eba4277da0.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39939, 39941, 39940, 3);
INSERT INTO `os_patent` VALUES (23390, '希土類元素の回収方法', '回收稀土元素的方法', 'JP6347225B2', '【課題】 少なくとも希土類元素と鉄族元素を含む処理対象物から、少ない工程数で希土類元素を酸化物として鉄族元素から分離して回収することができる方法を提供すること。\n\n【解決手段】 少なくとも希土類元素と鉄族元素を含む処理対象物と炭素を共存させた状態において、酸素が存在する雰囲気で300℃〜700℃の温度で第1の熱処理を行った後、酸素が存在しない雰囲気で1150℃以上の温度で第2の熱処理を行う工程を少なくとも含んでなることを特徴とする。\n\n【選択図】 図1', '本发明的目的是提供一种能够将稀土元素作为氧化物分离为氧化物作为来自包括至少稀土元素和铁基元素的氧化物的方法。\n\n溶液:在至少一种含有至少稀土元素和铁基的处理物和共存碳的气氛之后,在大气中在300℃至700℃的温度下进行第一热处理其中存在氧气,然后氧气的特征在于,至少在不存在气氛中在1150℃或更高的温度下进行第二热处理的方法。\n\n图1', 'JP2015071061', 1427731200, 'JP6347225B2', 1530028800, 1478707200, NULL, 1528387200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '一宮 里枝', NULL, 'JP2009249674A | JP2013199698A | JP2013227639A | WO2010098381A1 | WO2013018710A1', NULL, NULL, 1, '\\20220510\\c1b609065698427799d990c5037fd0e8.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39942, 39944, 39943, 2);
INSERT INTO `os_patent` VALUES (23391, 'R-T-B系焼結磁石の製造方法', 'R-T-B基烧结磁体的制备方法', 'JP5884957B1', 'R-T-B系焼結磁石の表面にRLM合金(RLはNdおよび/またはPr、MはCu、Fe、Ga、Co、Niから選ばれる1種以上)の粉末と、RHフッ化物(RHはDyおよび/またはTb)の粉末とを存在させた状態において、R-T-B系焼結磁石の焼結温度以下で熱処理を行う工程を含む。RLM合金はRLを50原子%以上含み、かつ、前記RLM合金の融点は前記熱処理の温度以下である。熱処理は、RLM合金の粉末とRHフッ化物の粉末とが、RLM合金:RHフッ化物=96:4〜5:5の質量比率でR-T-B系焼結磁石の表面に存在する状態で行われる。', 'RLM合金(R1是Nd和/或Pr,m是从Cu,Fe,Ga,Co,Ni)中选择的1或更多,Rh氟化物(RH是Dy和/或Rh)在RTB的表面上烧结磁体。或者,在存在或Tb的粉末)的状态下,在RTB的烧结磁体的烧结温度下进行热处理。RLM合金含有50个原子%或更多R1,RLM合金的熔点等于或小于热处理的温度。在RLM合金的粉末和RH氟化粉的粉末以RLM合金的质量比上存在RLM合金和Rh氟化粉末的状态下进行热处理:RH氟化物= 96:4至5: 5。', 'JP2015556300', 1429718400, 'JP5884957B1', 1457971200, 1457971200, NULL, 1455811200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 20, 1, 0, 0, 0, NULL, NULL, NULL, '2014090929 | 2014133621', 'JP | JP', 1398355200, 12, 12, NULL, NULL, 9, 1, 1, 1, 1, NULL, NULL, NULL, '小林 大介', NULL, 'JP2007287874A | JP2007287875A | JP2012248827A | JP2012248828A | JP2013045844A | JP2013105903A | JP2013153172A | JP2013175705A | WO2006064848A1', 'WO2017068946A1', 'SEPEHRI-AMIN H et al.,Coercivity enhancement of hydrogenation-disproportionation-desorption-recombination processed Nd-Fe-,Scripta MATERIALIA,UK,2010年11月,Vol.63 No.11,Page.1124-1127', 1, '\\20220510\\9a3506c2d85d4532b8743f93503f3512.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39945, 39947, 39946, 14);
INSERT INTO `os_patent` VALUES (23392, 'Method for producing r-t-b sintered magnet', 'r-t-b烧结磁铁的制造方法', 'EP3136407B1', 'A step is provided which performs a heat treatment at the sintering temperature of a sintered R-T-B based magnet or lower, while a powder of an RLM alloy (where RL is Nd and/or Pr; M is one or more selected from among Cu, Fe, Ga, Co and Ni) and a powder of an RH fluoride (where RH is Dy and/or Tb) are present on a surface of the sintered R-T-B based magnet. The RLM alloy contains RL in an amount of 50 at% or more, and a melting point of the RLM alloy is equal to or less than a temperature of the heat treatment. The heat treatment is performed while the RLM alloy powder and the RH fluoride powder are present on the surface of the sintered R-T-B based magnet at a mass ratio of RLM alloy: RH fluoride = 96:4 to 5:5.', '提供一种步骤，其在RTB基烧结磁体或更低的烧结温度下进行热处理，同时RLM合金的粉末（其中RL是Nd和/或Pr; M是选自Cu，Fe中的一种或多种）在RTB系烧结磁铁的表面存在RH，Co，Ni）和RH氟化物粉末（RH为Dy和/或Tb）。 RLM合金含有50at％或更多的RL，并且RLM合金的熔点等于或小于热处理的温度。在RLM合金粉末和RH氟化物粉末以RLM合金：RH氟化物= 96：4至5：5的质量比存在于烧结的R-T-B基磁体的表面上的同时进行热处理。', 'EP2015782872', 1429718400, 'EP3136407B1', 1539705600, 1488297600, NULL, 1539705600, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 23, 1, 0, 0, 0, NULL, NULL, NULL, '2014090929 | 2014133621', 'JP | JP', 1398355200, 12, 12, NULL, NULL, 11, 0, 0, 0, 1, NULL, '894', NULL, NULL, NULL, 'EP1890301A1 | EP2085982A2 | JP2007287874A | JP2007287875A | JP2012248827A | JP2012248828A | JP2013045844A | JP2013105903A | JP2013153172A | JP2013175705A | WO2006064848A1', NULL, 'SEPEHRI-AMIN H ET AL.: \'Coercivity enhancement of hydrogenation-disproportionation-desorption - recombination processed Nd-Fe-B powders by the diffusion of Nd-Cu eutectic alloys\' SCRIPTA MATERIALIA vol. 63, no. 11, November 2010, pages 1124 - 1127, XP027289876', 1, '\\20220510\\54416643d2c842e89f0072755bdbd337.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, '有效:DE,FR,GB | 失效:RS,NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,HU,SE,SI,MC,SK,SM,IE,EE,CH,MT,IS,IT,GR,AL,ES,AT,CY,CZ,PL,RO,LI,TR,NL | 未确认:MK', 39945, 39947, 39946, 14);
INSERT INTO `os_patent` VALUES (23393, 'Method for producing R-T-B sintered magnet', 'R-T-B烧结磁铁的制造方法', 'US10563295B2', 'A step is provided which performs a heat treatment at the sintering temperature of a sintered R-T-B based magnet or lower, while a powder of an RLM alloy (where RL is Nd and/or Pr; M is one or more selected from among Cu, Fe, Ga, Co and Ni) and a powder of an RH fluoride (where RH is Dy and/or Tb) are present on a surface of the sintered R-T-B based magnet. The RLM alloy contains RL in an amount of 50 at % or more, and a melting point of the RLM alloy is equal to or less than a temperature of the heat treatment. The heat treatment is performed while the RLM alloy powder and the RH fluoride powder are present on the surface of the sintered R-T-B based magnet at a mass ratio of RLM alloy:RH fluoride=96:4 to 5:5.', '提供了一种步骤，该步骤在RTB基烧结磁体的烧结温度或更低的烧结温度下执行热处理，而RLM合金粉末（其中RL为Nd和/或Pr； M为选自Cu，Fe中的一种或多种）  ，Ga，Co和Ni）和RH氟化物粉末（其中RH是Dy和/或Tb）存在于烧结RTB基磁体的表面上。  RLM合金包含50原子％以上的RL，并且RLM合金的熔点等于或小于热处理的温度。 当RLM合金粉末和RH氟化物粉末以RLM合金∶RH氟化物＝ 96∶4至5∶5的质量比存在于烧结的R-T-B基磁体的表面上时进行热处理。', 'US15/304886', 1429718400, 'US10563295B2', 1581955200, 1498665600, NULL, 1581955200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 0, 1, 0, 0, 0, NULL, NULL, NULL, '2014090929 | 2014133621', 'JP | JP', 1398355200, 12, 12, NULL, NULL, 11, 0, 0, 0, 0, NULL, '869', NULL, 'SU, XIAOWEI', NULL, 'JP2007287874A | JP2007287875A | JP2012248827A | JP2012248828A | US20070240789A1 | US20090226339A1 | US20150187494A1 | US20150211139A1 | US20170263379A1 | US20170263380A1 | US20170323723A1', NULL, NULL, 1, '\\20220510\\4c866d40424c45baadc47d4bce9e6b2f.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39945, 39947, 39946, 14);
INSERT INTO `os_patent` VALUES (23394, 'VERFAHREN ZUR HERSTELLUNG EINES GESINTERTEN R-T-B-MAGNETS', '制造烧结R-T-B磁体的方法', 'DE602015018417T2', 'This invention includes a step for performing a heat treatment at a temperature equal to or below the sintering temperature of an R-T-B sintered magnet when an RLM alloy (RL: Nd and/or Pr, and M: one or more element selected from Cu, Fe, Ga, Co, and Ni) and a RH fluoride (RH: Dy and/or Td) powder has been provided on the surface of the R-T-B sintered magnet. The RLM alloy contains 50% (atom basis) or more of RL and has a melting point equal to or below the temperature of the heat treatment. The heat treatment is performed in a state in which the RLM alloy powder and the RH fluoride powder are present on the surface of the R-T-B sintered magnet at an RLM alloy:RH fluoride ratio (mass) of 96:3-5:5.', '本发明包括当RLM合金（RL：Nd和/或Pr和M：选自Cu，Fe的一种或多种元素）在RTB烧结磁体的烧结温度等于或低于该温度下进行热处理的步骤。已经在RTB烧结磁体的表面上提供了Ga，Co和Ni）和RH氟化物（RH：Dy和/或Td）粉末。 RLM合金含有50％（原子基）或更多的RL，并且具有等于或低于热处理温度的熔点。在RLM合金：RH氟化物比（质量）为96：3-5：5的条件下，RLM合金粉末和RH氟化物粉末存在于R-T-B烧结磁体的表面上的状态下进行热处理。', 'DE602015018417', 1429718400, 'DE602015018417T2', 1539705600, 1539705600, NULL, 1539705600, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 34, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '895', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39948, 39947, 39949, 14);
INSERT INTO `os_patent` VALUES (23395, 'R-T-B系焼結磁石の製造方法', '制造R-T-B基烧结磁体的方法', 'JP6414592B2', 'R-T-B系焼結磁石の表面にRLAl合金(RLはNdおよび/またはPr)の粉末と、RH化合物(RHはDyおよび/またはTb、RH化合物はRHフッ化物、RH酸化物、RH酸フッ化物から選ばれる1種または2種以上)の粉末とを存在させた状態において、R-T-B系焼結磁石の焼結温度以下で熱処理を行う工程を含む。RLAl合金はRLを65原子%以上含み、かつ、前記RLAl合金の融点は前記熱処理の温度以下である。熱処理は、RLAl合金の粉末とRH化合物の粉末とが、RLAl合金:RH化合物=96:4〜5:5の質量比率でR-T-B系焼結磁石の表面に存在する状態で行われる。', 'RLAL合金(R1是Nd和/或Pr)粉末在RTB的烧结磁体的表面上,RH化合物(RH是Dy和/或Tb,Rh化合物是来自RH氟化物,RH氧化物,RH酸氟化物处在存在所选择的一个或多个所选粉末的情况下,在基于RTB的烧结磁体的烧结温度以下进行热处理。Rlal合金含有65个原子%或更多的R1,并且Rlal合金的熔点等于或小于热处理的温度。在其中Rlal合金的粉末和Rh化合物的粉末以Rlal合金的质量比存在于RTB基烧结磁体的表面上的状态下进行热处理:RH化合物= 96:4至5:5。', 'JP2016523557', 1432742400, 'JP6414592B2', 1540915200, 1492617600, NULL, 1539273600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 1, 0, 0, 0, NULL, NULL, NULL, '2014111112 | 2014133614', 'JP | JP', 1401292800, 3, 3, NULL, NULL, 8, 0, 0, 0, 0, NULL, NULL, NULL, '堀 拓也', NULL, 'JP2007287874A | JP2007287875A | JP2011159852A | JP2012049492A | JP2012248827A | JP2012248828A | JP2014063850A | WO2008139690A1', NULL, NULL, 1, '\\20220510\\334b6c58671c45d08a7790f160d782fb.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39950, 39952, 39951, 3);
INSERT INTO `os_patent` VALUES (23396, 'R-T-B系焼結磁石の製造方法およびR-T-B系焼結磁石', '制造RTB基烧结磁体和RTB基烧结磁体的方法', 'JP6508571B2', '【課題】重希土類元素RHをできるだけ使用することなく、Br、HcJ、Hk/HcJの全てが高いレベルにある優れた磁気特性を有するR-T-B系焼結磁石を安定して製造することができる-T-B系焼結磁石の製造方法およびそれによって得られたR-T-B系焼結磁石を提供する。\n\n【解決手段】従来一般に用いられてきたR-T-B系合金とほぼ同様のB量からなるR-T-B系の主合金と、Pr、B、Ga、TiまたはZr、およびFeを必須元素として含有する副合金とを、主合金と副合金とを混合した混合合金を微粉砕した混合合金微粉砕粉末100質量%に含有されるTiが0.1〜0.3質量%またはZrが0.19〜0.57質量%となるように混合し、成形、焼結、熱処理する。\n\n【選択図】図1', '[问题:主题之间] Breek Element Rh尽可能多,Br, HcJ, Hk/ HcJ提供一种制造基于TB的烧结磁体的方法,该烧结磁体可以稳定地生产具有优异磁性的RTB的烧结磁体,以及由此获得的RTB的烧结磁体。。\n\n溶液:含有基于RTB的初级金的侧合金,基于常规使用的RTB基合金,PR,B,Ga,Ti或Zr等B基于B的B类B,以及Fe作为必需元素。混合0.1至0.3质量%或Zr用混合合金细碎的粉末,含有混合合金细粉粉的混合合金,用混合合金细磨粉末,具有混合合金细粒细磨粉末,0.19至0.57质量%。模具,烧结和热量。\n\n图1', 'JP2015130835', 1435593600, 'JP6508571B2', 1557244800, 1484755200, NULL, 1554998400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 44, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '堀 拓也', NULL, 'JP1993175026A | JP2005197301A | JP2012079796A | WO2013008756A1 | WO2015002280A1', NULL, NULL, 1, '\\20220510\\b583fcc5693a47088402314b0f0eec8d.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39953, 39955, 39954, 2);
INSERT INTO `os_patent` VALUES (23397, 'R-T-B系焼結磁石の製造方法', '制造RTB基烧结磁体的方法', 'JP6503960B2', '【課題】重希土類元素であるRHをR-T-B系焼結磁石内部に効率的に拡散させる。\n\n【解決手段】R-T-B系焼結磁石の表面にRLM合金(RLはNdおよび/またはPr、MはCu、Fe、Ga、Co、Niから選ばれる1種以上)の粉末と、RH酸化物(RHはDyおよび/またはTb)の粉末とを存在させた状態において、R-T-B系焼結磁石の焼結温度以下で熱処理を行う工程を含む。RLM合金はRLを65原子%以上含み、かつ、前記RLM合金の融点は前記熱処理の温度以下である。熱処理は、RLM合金の粉末とRH酸化物の粉末とが、RLM合金:RH酸化物=9.6:0.4~5:5の質量比率でR-T-B系焼結磁石の表面に存在する状態で行われる。\n\n【選択図】なし', '本发明的一个目的是扩散RH,其是重稀土元素的R-T-B基烧结磁体。\n\n烧结磁体表面上的基于RTB的烧结磁体(R1是Nd和/或Pr,m是选自粉末的状态下的Cu,Fe,Ga,Co,Ni)和Rh氧化物(RH)中的一种或多种。存在Dy和/或Tb),存在下低于RTB基烧结磁体的烧结温度的热处理的步骤。RLM合金含有65个原子或更多R1,RLM合金的熔点等于或小于热处理的温度。在RLM合金的质量比的RLM合金和RH氧化物粉末的状态下存在于RLM合金的粉末的状态下进行热处理:RLM合金的质量比:RH氧化物= 9.6:0.4至5 :5。\n\n[选择图]无', 'JP2015147328', 1437926400, 'JP6503960B2', 1556035200, 1457539200, NULL, 1554393600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, '2014153732', 'JP', 1406563200, 2, 2, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '鈴木 孝章', NULL, 'JP2007287874A | JP2007287875A | JP2012248827A | JP2012248828A | JP2014093391A | JP2014127491A', NULL, NULL, 1, '\\20220510\\1a428f2fc5444763922741c93282629d.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39956, 39958, 39957, 2);
INSERT INTO `os_patent` VALUES (23398, 'Slurry recycling method, producing method of rare earth sintered magnet and slurry recycling apparatus', '浆料回收方法、稀土烧结磁体的生产方法及浆料回收装置', 'US10807167B2', 'The present invention provides a producing method of a rare earth sintered magnet which is suitable as a producing method of a high performance rare earth sintered magnet which can reduce the number of steps for reusing defective molded bodies generated in a wet molding step of the rare earth sintered magnet, and which has a small content amount of oxygen. The invention also provides a slurry recycling method used for the producing method, and a slurry recycling apparatus. Each of the methods includes a crushing step of crushing, in mineral oil and/or synthetic fluid, a molded body in which slurry formed from alloy powder for a rare earth sintered magnet and mineral oil and/or synthetic fluid is wet molded in magnetic field, and recycling the crushed molded body into slurry.', '本发明提供一种稀土烧结磁体的制造方法,该稀土烧结磁体的制造方法适于作为高性能稀土烧结磁体的制造方法,该高性能稀土烧结磁体的制造方法可以减少重复利用在稀土的湿法成型步骤中产生的缺陷成型体的步骤数。 氧含量少的烧结磁铁。 本发明还提供一种用于该制造方法的浆料再循环方法以及浆料再循环设备。 每种方法都包括在矿物油和/或合成流体中压碎成型体的压碎步骤,在该成型体中,将由用于稀土烧结磁体的合金粉末和矿物油和/或合成流体形成的浆料在磁场中湿法成型。  ,并将粉碎的成型体回收成浆料。', 'US14/817362', 1438617600, 'US10807167B2', 1603123200, 1453910400, NULL, 1603123200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 33, 1, 0, 0, 0, NULL, NULL, NULL, '2010082041 | PCT/JP2011/057540', 'JP | WO', 1269964800, 14, 14, NULL, NULL, 24, 0, 0, 0, 6, NULL, '875', NULL, 'HEVEY, JOHN A', NULL, 'CN101447331A | CN1067826A | CN86105182A | GB2456377A | JP1998097937A | JP1998125521A | JP2001287163A | JP2003051418A | JP2004207578A | JP2004281873A | KR1020010111750A | US20030006327A1 | US20040020563A1 | US20040031206A1 | US20120211910A1 | US5405223A | US5489343A | US6042748A | US6159308A | US9463509B2 | WO1992009380A1', NULL, 'European Patent Application No. 11765478.0: Extended European Search Report dated Aug. 1, 2017. cited by applicant. | International Search Report far International Application No. PCT/JP2011/057540 dated Jun. 14, 2011. cited by applicant | Office Action dated Sep. 30, 2014, corresponding to Japanese Patent Application No. 2012-509450. cited by applicant | Office action in counterpart Chinese Application No. 201180016417.1, dated Feb. 16, 2016. cited by applicant | Ogawa et al., JP 2004-281873A (machine translation) (Year: 2004). cited by examiner | Third Office Action dated Nov. 4, 2015 to the corresponding Chinese patent application No. 201180016417.1. cited by applicant', 1, '\\20220510\\13a88e3b3fa94c109985c2db7d5d05c2.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 39571, 39573, 39572, 15);
INSERT INTO `os_patent` VALUES (23399, '希土類元素を含む鉄系合金微粉末の製造方法', '含有稀土元素的铁基合金细粉的制造方法', 'JP6406172B2', '【課題】保磁力や耐候性のばらつきが低減され、安定して高い保磁力と優れた耐候性を示す、希土類元素を含む鉄系合金微粉末を製造する方法を提供する。\n\n【解決手段】本発明に係る希土類元素を含む鉄系合金微粉末の製造方法は、有機溶剤を含む溶媒中で希土類元素を含む鉄系合金粉末を粉砕するとともに、その粉砕に際して燐酸化合物を添加し、表面が燐酸塩皮膜で被覆された微粉末を得る第1の工程と、得られた微粉末に対して所定の温度で加熱処理を施す第2の工程と、を有する。第2の工程では、得られる鉄系合金微粉末の水素含有量が0.2質量%以下となるように、分子中に不飽和結合を有する炭化水素を含む雰囲気中で、100℃以上300℃以下の温度条件で加熱処理する。\n\n【選択図】なし', '本发明的目的是提供一种制造铁基合金细粉末的方法,所述铁基合金细粉末包含稀土元素,所述稀土元素显示出稳定和高矫顽力和优异的耐候性。\n\n制造含有含有稀土元素的铁基合金细粉的方法是含有有机溶剂的溶剂,粉碎含有稀土元素的铁基合金粉末,并加入磷酸盐化合物在研磨时。获得涂覆有磷酸盐磷酸盐的细粉的第一步骤,以及在预定温度相对于所得细粉末在预定温度下进行热处理的第二步骤。在第二步中,在分子中含有不饱和键的烃的气氛中,使得得到的铁基合金细粉末的氢含量为0.2质量%或更小,100℃或更高,300℃或更低的热量在温度条件下处理。\n\n[选择图]无', 'JP2015165742', 1440432000, 'JP6406172B2', 1539705600, 1488384000, NULL, 1538064000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '河口 展明', NULL, 'JP2000208321A | JP2002124406A | JP2004111515A | JP2005002463A | JP2006128535A | JP2011216838A | JP2012156438A', NULL, NULL, 1, '\\20220510\\bafd096075d44451aeec1b03e39fdf04.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39959, 39961, 39960, 2);
INSERT INTO `os_patent` VALUES (23400, 'R-T-B系焼結磁石', 'R-T-B系焼结磁石', 'JP6474043B2', '【課題】RHの含有量を低減しつつ、高いHcJと高いHk/HcJを有するR-T-B系焼結磁石の提供。\n\n【解決手段】R(Rは希土類元素のうち少なくとも一種であり、Ndを必ず含む。但し、2質量%未満のDy、Tb、GdおよびHoのうち少なくとも一種を含有することができる):32.0〜34.0質量%、B:0.90〜0.98質量%、Ga:0.60〜1.10質量%、Cu:0.20〜0.35質量%、Ti:0.15〜0.28質量%、Al:0.05〜0.50質量%、を含有し、残部T(TはFe又はFeとCo)及び不可避的不純物からなり、且つ、下記式(1)を満足する組成を有するR-T-B系焼結磁石。0.06≦[(Fewt/Feat)+(Cowt/Coat)+(Alwt/Alat)]-14×[(Bwt/Bat)-2×(Tiwt/Tiat)] (1)\n\n【選択図】図1', '要解决的问题:减少RH的含量,高H.cJ和高H.k/ HcJ提供R-T-B基烧结磁体。\n\nR(R是稀土元素中的至少一种,总是包括ND。然而,可以含有小于2质量%的Dy,Tb,Gd和Ho中的至少一种):32.0-34.0%(重量),b :0.90至0.98重量%,Ga:0.60至1.10重量%,Cu:0.20至0.35重量%,Ti:0.15至0.28重量%,Al:0.05至0.50%(重量),余额T(T是Fe或Fe,CO 2)和不可避免的杂质和基于RTB的烧结磁体,其具有满足下式(1)的组合物。0.06≤[(Fewt/ FE.at)+(COwt/ co.at)+(alwt/ al.at)]  -  14×[(bwt/ B.at)-2×(TIwt/ ti.at)](1)\n\n图1', 'JP2015166603', 1440518400, 'JP6474043B2', 1551196800, 1488384000, NULL, 1549555200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 4, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, '鈴木 孝章', NULL, 'JP2008264875A | JP2015119132A | JP2015122395A | WO2013008756A1', NULL, NULL, 1, '\\20220510\\271957beafaa45fcab6ed19427fe3639.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39962, 39964, 39963, 2);
INSERT INTO `os_patent` VALUES (23401, '自動検査方法および自動検査装置', '自动检查方法和自动检查装置', 'JP6512035B2', '【課題】焼結体片の欠けの有無を高い正確性をもって、および/または、短時間で判定することができる自動検査方法を提供する。\n\n【解決手段】自動検査方法は、直方体の焼結体片の長さ、幅および高さを測定する工程aと、焼結体片の実体積を計測する工程bと、実体積と長さ×幅×高さとの差として欠け体積を求める工程cと、欠け体積を予め決められた許容体積と比較し、欠け体積が許容体積以下である焼結体片を良品と判定する工程dと、焼結体片の質量を測定する工程eと、質量を予め決められた許容質量と比較し、質量が許容質量以上である焼結体片を良品と判定する工程fとを包含する。\n\n【選択図】図3', '自动检测方法具有高精度和/或短时间提供高精度和/或短时间。\n\n自动检查方法是用于测量矩形平行件的长度,宽度和高度的步骤B,以及用于将切碎的体积确定切碎体积的实际体积和长度×步骤C的步骤B.宽度×高度,并将切碎的体积与预定的允许体积进行比较,并且烧结体片等于或小于过程D和计算。用于测量一致件的质量的步骤E.将质量的质量与预定的允许质量进行比较,并且质量等于或更大的烧结体片等于或不等于或不确定烧结体件。\n\n图3.', 'JP2015168458', 1440691200, 'JP6512035B2', 1557849600, 1488384000, NULL, 1555603200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 11, 0, 0, 0, 0, NULL, NULL, NULL, '梶田 真也', NULL, 'JP1984088614A | JP1991081603A | JP2002062267A | JP2003222595A | JP2006273464A | JP2008232519A | JP2010008239A | JP2011232120A | JP2014115138A | JP2015043715A | US4496971A', NULL, NULL, 1, '\\20220510\\3a947f2fa1dc4e47b27c2817579840b4.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39965, 39967, 39966, 2);
INSERT INTO `os_patent` VALUES (23402, 'Verfahren zum Herstellen eines R-T-B basierten Sintermagneten', '制造R-T-B基烧结磁体的方法', 'DE112015004222T5', 'Es wird ein Verfahren zum Herstellen eines R-T-B-basierten Sintermagneten offenbart, umfassend: 1) einen Schritt des Herstellens eines R-T-B-basierten Sintermagnetmaterials durch Sintern eines Formkörpers, wobei das R-T-B-basierte Sintermagnetmaterial Folgendes enthält: 27,5 Massenprozent oder mehr und 34,0 Massenprozent oder weniger an R; 0,85 Massenprozent oder mehr und 0,93 Massenprozent oder weniger an B; 0,20 Massenprozent oder mehr und 0,70 Massenprozent oder weniger an Ga; mehr als 0,2 Massenprozent und 0,50 Massenprozent oder weniger an Cu; 0,05 Massenprozent oder mehr und 0,5 Massenprozent oder weniger an Al; und 0 Massenprozent oder mehr und 0,1 Massenprozent oder weniger an M, mit dem Rest T und unvermeidliche Verunreinigungen, wobei das R-T-B-basierte Sintermagnetmaterial Ungleichungen (1) und (2) erfüllt; 2) einen Hochtemperatur-Wärmebehandlungsschritt des Erhitzens des R-T-B-basierten Sintermagnetmaterials auf eine Erhitzungstemperatur von 730°C oder höher und 1020°C oder niedriger, und dann Abkühlen des R-T-B-basierten Sintermagnetmaterials auf 300°C mit einer Abkühlungsrate von 5°C/min oder mehr; und 3) einem Niedertemperatur-Wärmebehandlungsschritt des Erhitzens des R-T-B-basierten Sintermagnetmaterials nach dem Hochtemperatur-Wärmebehandlungsschritt auf 440°C oder höher und 550°C oder niedriger: \n\n[T] – 72,3[B] > 0		(1)\n\n([T] – 72,3[B])/55,85 < 13[Ga]/69,72		(2)\n\nwobei [T] ein Gehalt an T in Massenprozent ist, [B] ein Gehalt an B in Massenprozent ist und [Ga] ein Gehalt an Ga in Massenprozent ist.', '公开了一种制造RTB的烧结磁体的方法,包括:1)通过烧结模制体通过烧结制造基于RTB的烧结磁性材料的步骤,其中RTB的烧结磁性材料含有以下:27.5质量%或者更多,34.0质量%或更低到r; 0.85质量%以上,0.93质量%或更低至b;大约0.20质量%以上和0.70质量%或更低。 Cu以上超过0.2质量%和0.50质量%或更低; 0.05质量%或更多,0.5质量%或更低。与自由基T和不可避免的杂质,0质量%或更多和0.1质量%或更低,其中R-T-B基烧结磁性材料满足不等式(1)和(2); 2)高温热处理步骤,将RTB的烧结磁性材料加热至730℃或更高,1020℃或更低的加热温度,然后将RTB的烧结磁性材料冷却至300℃冷却速率为5°C / min或更大; 3)低温热处理步骤,在高温热处理步骤至440℃或更高,550℃或更低后加热R-T-B基烧结磁性材料:\n\n[t]  -  72.3 [b]> 0(1)\n\n([T]  -  72.3 [b])/ 55.85 <13 [GA] / 69.72(2)\n\n其中[t]是质量百分比的含量,[B] B的含量为质量%,[Ga]是质量%的Ga的含量。', 'DE112015004222', 1440950400, 'DE112015004222T5', 1498665600, 1498665600, NULL, NULL, '德国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'T5', NULL, NULL, 20, 4, 0, 0, 0, NULL, NULL, NULL, '2014188836', 'JP', 1410883200, 8, 8, NULL, NULL, 5, 0, 0, 0, 0, NULL, '895', NULL, NULL, NULL, 'JP2014071229A | JP2014072920A | JP2014188836A | WO2013008756A1 | WO2013191276A1', NULL, NULL, 1, '\\20220510\\f7758b05cf8240d382df4f4a6d3a6970.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39968, 39970, 39969, 8);
INSERT INTO `os_patent` VALUES (23403, 'R-T-B系焼結磁石の製造方法', '制造RTB基烧结磁体的方法', 'JP6500907B2', '1)成形体を焼結し、27.5質量%以上、34.0質量%以下のRと、0.85質量%以上、0.93質量%以下のBと、0.20質量%以上、0.70質量%以下のGaと、0.2質量%より多く、0.50質量%以下のCuと、0.05質量%以上、0.5質量%以下のAlと、0質量%以上、0.1質量%以下のMと、を含有し、残部がTおよび不可避不純物であり、式(1)および(2)を満足するR-T-B系焼結磁石素材を準備する工程と、 2)R-T-B系焼結磁石素材を730℃以上1020℃以下の温度に加熱後、5℃/分以上で300℃まで冷却する高温熱処理工程と 3)高温熱処理工程後のR-T-B系焼結磁石素材を440℃以上550℃以下の温度に加熱する低温熱処理工程と、を含むR-T-B系焼結磁石の製造方法である。\n\n [T]-72.3[B]>0 (1)\n\n ([T]-72.3[B])/55.85<13[Ga]/69.72 (2)\n\n (なお、[T]は質量%で示すTの含有量であり、[B]は質量%で示すBの含有量であり、[Ga]は質量%で示すGaの含有量である)', '1)将模塑体烧结,27.5质量%以上,34.0质量%或更低,0.85质量%以上,0.93质量%或更低的B,0.20质量%,或更高,0.70重量%或更低和0.2质量质量。超过%,Cu为0.50质量%以下,0.05质量%以上,0.5质量%以下,0.5质量%,0质量%,或更高,0.1质量%以下,和平衡是t和不可避免的杂质。制备在加热至730℃或更高和1020℃或更低的温度后,在加热至1020℃或更低的温度后,制备满足方程(1)和(2),2)的RTB的烧结磁体材料,5℃/ min或者更多和3)高温热处理步骤冷却至300℃和3)一种制造基于RTB的烧结磁体的方法,包括加热至440℃或更高的温度的低热热处理步骤。 550℃或更低,一种制造基于RTB的烧结磁体的方法,包括高温热处理过程。它是。\n\n[t] -72.3 [b]> 0(1)\n\n([t] -72.3 [b])/ 55.85 <13 [ga] /69.72(2)\n\n(注意,[T]是由质量%的T表示的T的含量,[B]是质量%的B的含量,并且[Ga]是%重量%的GA的含量)', 'JP2016548822', 1440950400, 'JP6500907B2', 1555430400, 1502899200, NULL, 1553788800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 18, 4, 0, 0, 0, NULL, NULL, NULL, '2014188836', 'JP', 1410883200, 8, 8, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '堀 拓也', NULL, 'JP1993047533A | JP2007266199A | JP2014027268A | WO2013008756A1 | WO2013191276A1', NULL, NULL, 1, '\\20220510\\0ff110fbd6a74079918276038641bda8.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39968, 39970, 39969, 8);
INSERT INTO `os_patent` VALUES (23404, 'Method for manufacturing R-T-B based sintered magnet', 'R-T-B系烧结磁铁的制造方法', 'US10446306B2', 'A method for manufacturing an R-T-B based sintered magnet includes: 1) a step of preparing an R-T-B based sintered magnet material by sintering a molded body, the sintered magnet material having a particular composition and satisfying inequality expressions (1) and (2); 2) a high-temperature heat treatment step of heating the sintered magnet material to a heating temperature of 730° C. to 1,020° C. and then cooling the sintered magnet material to 300° C. at a cooling rate of 5° C./min or more; and 3) a low-temperature heat treatment step of heating the sintered magnet material after the high-temperature heat treatment step to 440° C. to 550° C.:\n\n[T]−72.3[B]>0  (1)\n\n([T]−72.3[B])/55.85&#x3c;13[Ga]/69.72  (2)\n\n\n\nwhere [T] is a T content in percent by mass, [B] is a B content in percent by mass, and [Ga] is a Ga content in percent by mass.', '一种基于R-T-B的烧结磁体的制造方法，包括：1）通过烧结成型体来制备基于R-T-B的烧结磁体材料的步骤，所述烧结的磁体材料具有特定的组成并且满足不等式（1）和（2）。 2）高温热处理步骤，将烧结磁体材料加热至730℃至1,020℃的加热温度，然后以5℃的冷却速率将烧结磁体材料冷却至300℃。 / min或更高； 3）低温热处理工序，其是将高温热处理工序后的烧结磁铁材料加热至440℃〜550℃：\n\n[T] −72.3 [B]> 0（1）\n\n（[T] −72.3 [B]）/ 55.85 <13 [Ga] /69.72（2）\n\n其中，[T]是以质量％计的T含量，[B]是以质量％计的B含量，[Ga]是以质量％计的Ga含量。', 'US15/511299', 1440950400, 'US10446306B2', 1571068800, 1504713600, NULL, 1571068800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 4, 0, 0, 0, NULL, NULL, NULL, '2014188836', 'JP', 1410883200, 8, 8, NULL, NULL, 16, 0, 0, 0, 4, NULL, '870', NULL, 'SU, XIAOWEI', NULL, 'CN103620707A | CN105474337A | JP1994237826A | JP2009093583A | JP2013074040A | JP2014088443A | US20040094237A1 | US20140132377A1 | US20140184370A1 | US20150170810A1 | US20160284468A1 | US20170025207A1 | US5472525A | US5595608A | WO2013008756A1 | WO2013191276A1', NULL, 'Communication dated Mar. 28, 2018, from State Intellectual Property Office of the P.R.C. in counterpart application No. 201580049440.9. cited by applicant | International Preliminary Report on Patentability dated Mar. 30, 2017 issued by the International Bureau in International Application No. PCT/JP2015/074777 with translation of Written Opinion. cited by applicant | International Search Report of PCT/JP2015/074777 dated Oct. 13, 2015. | International Search Report of PCT/JP2015/074777 dated Oct. 13, 2015. cited by applicant.', 1, '\\20220510\\1c9e23e158c9424c90d18cbf2e4ef99a.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 39968, 39970, 39969, 8);
INSERT INTO `os_patent` VALUES (23405, 'R-T-B系焼結磁石の製造方法', '制造R-T-B基烧结磁体的方法', 'JP6414598B2', 'R-T-B系焼結磁石の表面に、アトマイズ法で作製されたRLM合金(RLはNdおよび/またはPr、MはCu、Fe、Ga、Co、Ni、Alから選ばれる1種以上の元素)の粉末と、RH化合物(RHはDyおよび/またはTb)の粉末とを存在させた状態において、R-T-B系焼結磁石の焼結温度以下で熱処理を行う工程を含む。RLM合金はRLを65原子%以上含み、かつ、前記RLM合金の融点は前記熱処理の温度以下である。熱処理は、RLM合金の粉末とRH化合物の粉末とが、RLM合金:RH化合物=9.6:0.4〜5:5の質量比率でR-T-B系焼結磁石の表面に存在する状態で行われる。', '通过雾化方法制备的RLM合金(R1是Nd和/或Pr,m是选自Cu,Fe,Ga,Co,Ni,Al)的一种或多种元素,并且在其中Rh化合物(RH为Dy和/或Tb)存在,在RTB基烧结磁体的烧结温度下进行热处理的过程。RLM合金含有65个原子或更多R1,RLM合金的熔点等于或小于热处理的温度。在RLM合金的粉末和RH化合物的粉末的状态下以RLM合金的质量比存在于R RLM合金的粉末和RH化合物的粉末的状态下进行热处理:RH化合物= 9.6:0.4至5 :5。', 'JP2016547460', 1441641600, 'JP6414598B2', 1540915200, 1498060800, NULL, 1539273600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 17, 1, 0, 0, 0, NULL, NULL, NULL, '2014185264', 'JP', 1410364800, 9, 9, NULL, NULL, 10, 0, 0, 0, 0, NULL, NULL, NULL, '堀 拓也', NULL, 'JP2007287874A | JP2007287875A | JP2012199423A | JP2012204696A | JP2012234971A | JP2012248827A | JP2012248828A | JP2014150119A | WO2008139690A1 | WO2015182705A1', NULL, NULL, 1, '\\20220510\\597a19c9648f480488e62d7eb323a2c7.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39971, 39973, 39972, 9);
INSERT INTO `os_patent` VALUES (23406, 'R-T-B系焼結磁石の製造方法', '制造R-T-B基烧结磁体的方法', 'JP6414597B2', 'R-T-B系焼結磁石の表面にRLM合金(RLはNdおよび/またはPr、MはCu、Fe、Ga、Co、Ni、Alから選ばれる1種以上の元素)の粉末と、RH化合物(RHはDyおよび/またはTb、RH化合物はRHフッ化物、RH酸化物、RH酸フッ化物から選ばれる1種または2種以上)の粉末とを存在させた状態において、R-T-B系焼結磁石の焼結温度以下で熱処理を行う工程を含む。RLM合金はRLを65原子%以上含み、かつ、前記RLM合金の融点は前記熱処理の温度以下である。熱処理は、RLM合金の粉末とRH化合物の粉末とが、RLM合金:RH化合物=9.6:0.4〜5:5の質量比率でR-T-B系焼結磁石の表面に存在する状態で行われる。', 'RLM合金(R1是Nd和/或Pr,M是选自Cu,Fe,Ga,Co,Ni,Al)和Rh化合物(Rh为Dy和/或Tb,RH化合物是RTB的烧结温度的一种或多种元素基于烧结磁铁进行下面进行热处理的过程。RLM合金含有65个原子或更多R1,RLM合金的熔点等于或小于热处理的温度。在RLM合金的粉末和RH化合物的粉末的状态下以RLM合金的质量比存在于R RLM合金的粉末和RH化合物的粉末的状态下进行热处理:RH化合物= 9.6:0.4至5 :5。', 'JP2016547459', 1441641600, 'JP6414597B2', 1540915200, 1498060800, NULL, 1539273600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 22, 1, 0, 0, 0, NULL, NULL, NULL, '2014185263 | 2014185265', 'JP | JP', 1410364800, 9, 9, NULL, NULL, 10, 0, 0, 0, 0, NULL, NULL, NULL, '堀 拓也', NULL, 'JP2007287874A | JP2007287875A | JP2012199423A | JP2012204696A | JP2012234971A | JP2012248827A | JP2012248828A | JP2014150119A | WO2008139690A1 | WO2015182705A1', NULL, NULL, 1, '\\20220510\\353c6bee4ea14f8aa8527d5818f57794.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39974, 39976, 39975, 9);
INSERT INTO `os_patent` VALUES (23407, 'Production method for R-T-B sintered magnet', 'R-T-B烧结磁铁的生产方法', 'US10510483B2', 'A step of, while a powder of an RLM alloy (where RL is Nd and/or Pr; M is one or more elements selected from among Cu, Fe, Ga, Co, Ni and Al) and a powder of an RH compound (where RH is Dy and/or Tb; and the RH compound is one, or two or more, selected from among an RH fluoride, an RH oxide, and an RH oxyfluoride) are present on the surface of a sintered R-T-B based magnet, performing a heat treatment at a sintering temperature of the sintered R-T-B based magnet or lower is included. The RLM alloy contains RL in an amount of 65 at % or more, and the melting point of the RLM alloy is equal to or less than the temperature of the heat treatment. The heat treatment is performed while the RLM alloy powder and the RH compound powder are present on the surface of the sintered R-T-B based magnet at a mass ratio of RLM alloy:RH compound=9.6:0.4 to 5:5.', '步骤：将RLM合金粉末（其中RL为Nd和/或Pr； M为选自Cu，Fe，Ga，Co，Ni和Al中的一种或多种元素）的粉末和RH化合物的粉末（ 其中RH是Dy和/或Tb；并且RH化合物是选自RH氟化物，RH氧化物和RH氟氧化物中的一种或两种以上，在烧结的RTB基磁体的表面上存在， 包括在基于RTB的烧结磁体的烧结温度或更低的烧结温度下的热处理。  RLM合金包含65原子％以上的RL，并且RLM合金的熔点等于或小于热处理的温度。 当RLM合金粉末和RH化合物粉末以RLM合金∶RH化合物的质量比＝ 9.6∶0.4至5∶5存在于烧结的R-T-B基磁体的表面上时进行热处理。', 'US15/509528', 1441641600, 'US10510483B2', 1576512000, 1505318400, NULL, 1576512000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 1, 0, 0, 0, NULL, NULL, NULL, '2014185263 | 2014185265', 'JP | JP', 1410364800, 9, 9, NULL, NULL, 16, 0, 0, 0, 0, NULL, '869', NULL, 'SU, XIAOWEI', NULL, 'CN106415752A | EP1923893A1 | EP1981043A1 | EP3136407A1 | JP2009116548A | JP2009116549A | JP2013121588A | JP2014086316A | JP2014096549A | US20070240789A1 | US20090226339A1 | US20150211139A1 | US20170183765A1 | US20170263379A1 | US20170323723A1 | US20170330659A1', NULL, NULL, 1, '\\20220510\\bf0e866cace0409b980a3d9f2a085966.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39974, 39976, 39975, 9);
INSERT INTO `os_patent` VALUES (23408, 'Production method for R-T-B sintered magnet', 'R-T-B烧结磁铁的生产方法', 'US10593472B2', 'A step of, while a powder of an RLM alloy (where RL is Nd and/or Pr; M is one or more elements selected from among Cu, Fe, Ga, Co, Ni and Al) which is produced through atomization and a powder of an RH compound (where RH is Dy and/or Tb) are present on the surface of a sintered R-T-B based magnet, performing a heat treatment at a sintering temperature of the sintered R-T-B based magnet or lower is included. The RLM alloy contains RL in an amount of 65 at % or more, and the melting point of the RLM alloy is equal to or less than the temperature of the heat treatment. The heat treatment is performed while the RLM alloy powder and the RH compound powder are present on the surface of the sintered R-T-B based magnet at a mass ratio of RLM alloy:RH compound=9.6:0.4 to 5:5.', '通过雾化生产的RLM合金粉末（其中RL为Nd和/或Pr； M为选自Cu，Fe，Ga，Co，Ni和Al中的一种或多种元素）的粉末的步骤 在烧结的RTB基磁体的表面上存在RH化合物（其中RH是Dy和/或Tb）时，在烧结的RTB基磁体的烧结温度以下进行热处理。  RLM合金包含65原子％以上的RL，并且RLM合金的熔点等于或小于热处理的温度。 当RLM合金粉末和RH化合物粉末以RLM合金∶RH化合物＝ 9.6∶0.4至5∶5的质量比存在于烧结的R-T-B基磁体的表面上时进行热处理。', 'US15/509529', 1441641600, 'US10593472B2', 1584374400, 1505318400, NULL, 1584374400, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, '2014185264', 'JP', 1410364800, 9, 9, NULL, NULL, 24, 0, 0, 0, 0, NULL, '869', NULL, 'SU, XIAOWEI', NULL, 'EP1923893A1 | EP1981043A1 | JP2005011973A | JP2006201395A | JP2007287874A | JP2007287875A | JP2009116548A | JP2009116549A | JP2012234971A | JP2012248827A | JP2012248828A | JP2013121588A | JP2014086316A | JP2014096549A | US20070034299A1 | US20070240789A1 | US20090226339A1 | US20110000586A1 | US20150187494A1 | US20150211139A1 | US20170183765A1 | US20170263380A1 | US20170323723A1 | US20170330659A1', NULL, NULL, 1, '\\20220510\\b42359022e2543e79cda7d83964b22eb.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39971, 39973, 39972, 9);
INSERT INTO `os_patent` VALUES (23409, '回転角検出用磁石、回転角検出装置及び回転角検出用磁石の製造方法', '旋转角检测磁铁的制造方法,旋转角检测装置及旋转角检测磁铁', 'JP6801170B2', 'PROBLEM TO BE SOLVED: To provide a rotation angle detection magnet being a diameter 2 pole type magnet having excellent magnetization workability even in a small shape and capable of increasing a distance to a sensor element; a rotation angle detector capable of achieving a small size; and a method for manufacturing the rotation angle detection magnet, capable of manufacturing the small rotation angle detection magnet.SOLUTION: A entire magnet 1 has approximately a disc shape and is magnetized in the radial direction, and a central portion thereof has a convex shaped portion 11 comprising a pair of inclined parts 12 and 12 facing each other in the magnetization direction and inclined on the central portion side and a flat part 13 continuous to the pair of inclined parts 12 and 12. The longitudinal size of the flat part 13 is approximately equal to the diameter of the magnet 1. A sensor element for detecting a leakage magnetic flux component from the magnet 1 is provided above the flat part 13.SELECTED DRAWING: Figure 1', '解决的问题:提供一种旋转角检测磁体,该直径为2极型的磁体即使在很小的形状下也具有出色的磁化可加工性,并且能够增加与传感器元件的距离。能够实现小型化的旋转角度检测器;解决方案:整个磁体1具有近似盘形的形状并且在径向上被磁化,并且其中心部分具有凸形部分,该旋转角度检测磁体的制造方法能够制造小的旋转角检测磁体。如图11所示,由在磁化方向上相对且在中央部侧倾斜的一对倾斜部12、12,以及与该一对倾斜部12、12连续的平坦部13构成。平坦部13的长度方向的尺寸为大致1mm左右。等于磁铁1的直径。在扁平部13的上方设有用于检测磁铁1的漏磁通分量的传感器元件。', 'JP2015178863', 1441814400, 'JP6801170B2', 1608048000, 1489593600, NULL, 1606665600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 11, 0, 0, 0, 0, NULL, NULL, NULL, '吉田 久', NULL, 'DE102011079657A1 | JP1990094474U | JP1991274413A | JP2003274624A | JP2006058256A | JP2009271054A | JP2010160036A | JP2012145425A | JP2012251843A | JP2015095642A | JP3161399U', NULL, NULL, 1, '\\20220510\\dbeea2bd925949788daaa7f08b956825.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 39977, 39979, 39978, 2);
INSERT INTO `os_patent` VALUES (23410, '希土類焼結磁石の製造方法及び当該製法にて使用される製造装置', '制造稀土烧结磁体的方法和制造方法中使用的制造装置', 'JP6280137B2', '1個1個の希土類焼結磁石焼結体を、モールドを焼結炉中に搬入せずに製造する製造方法と製造装置を提供する。\n\n2分割以上に分割された側壁を有するモールドに合金粉末を給粉する給粉工程と、前記合金粉末を前記モールド中に充填して充填成形体を作製する充填工程と、前記充填成形体に磁界を印加し、該充填成形体内の合金粉末を配向させ配向充填成形体を作製する配向工程と、前記モールドの側壁を前記配向充填成形体から引き離し、前記配向充填成形体をモールドから取り出す取出工程と、取り出した配向充填成形体を焼結する焼結工程と、を有し、前記充填工程と配向工程が別の場所で行われることを特徴とし、配向工程ではパルス磁界が印加され、モールドは、その内部を仕切板により複数の空洞に区切るのが好ましい。', '一个一个稀土烧结磁体烧结体具有制造方法和制造装置,用于制造模具而不在烧结炉中进行模具。\n\n进给合金粉末的填充步骤的填充步骤以及将填充模塑体填充到模具中的填充步骤和用于填充成型体的磁场,填充合金粉末并填充填充体的填充步骤模具和磁场。专有工艺,并在填充体中拉出合金粉末并产生取向填充体,以及从取向填充成型体中拉动模具侧壁的检索过程,并去除分配填充物来自模具的身体。烧结取向的填充体的烧结步骤,填充过程和对准过程在其他地方进行,并且在取向过程中施加脉冲磁场,并施加模具。优选分离通过隔板的多个空腔的内部。', 'JP2015549890', 1442505600, 'JP6280137B2', 1518537600, 1497456000, NULL, 1516896000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 24, 2, 0, 0, 0, NULL, NULL, NULL, '2014197688 | 2014197898', 'JP | JP', 1411833600, 12, 12, NULL, NULL, 8, 0, 0, 0, 1, NULL, '898', NULL, '小林 大介', NULL, 'JP2001323301A | JP2006019521A | JP2006097090A | JP2008294469A | JP2012060139A', NULL, '俵好夫、大橋検「希土類永久磁石」森北出版株式会社、1999年、p.60-63', 1, '\\20220510\\6da81537010c4aaa9214d63765b2e071.png', NULL, NULL, 1, NULL, NULL, 23, NULL, NULL, NULL, 39980, 39982, 39981, 13);
INSERT INTO `os_patent` VALUES (23411, '희토류 소결자석의 제조방법 및 해당 제법에 사용되는 제조장치', '稀土烧结磁体的制造方法和制造方法中使用的制造装置', 'KR101881778B1', '1개 1개의 희토류 소결자석 소결체를, 몰드를 소결로중에 반입하지 않고 제조하는 제조방법과 제조장치를 제공한다. 2분할 이상으로 분할된 측벽을 가지는 몰드에 합금분말을 급분하는 급분공정과, 상기 합금분말을 상기 몰드중에 충전해서 충전 성형체를 제작하는 충전공정과, 상기 충전 성형체에 자계를 인가하고, 그 충전 성형체 내의합금분말을 배향시켜 배향충전 성형체를 제작하는 배향공정과, 상기 몰드의 측벽을 상기 배향충전 성형체에서 떼어 놓고, 상기 배향충전 성형체를 몰드로부터 꺼내는 꺼냄공정과, 꺼낸 배향충전 성형체를 소결하는 소결공정을가지고, 상기 충전공정과 배향공정이 다른 장소에서 수행되는 것을 특징으로 하고, 배향공정에서는 펄스자계가인가되고, 몰드는 그 내부를 칸막이판에 의해 복수의 공동으로 구분하는 것이 바람직하다.', '本发明提供一种制造方法及制造装置，其不将模具带入烧结炉而一枚地制造稀土类烧结磁铁烧结体。 快速分配步骤是将合金粉末快速分配到具有分成两个或更多个侧壁的模具中的填充步骤，填充步骤是将合金粉末填充到模具中以产生填充的成型体，并向填充的成型体施加磁场，并填充成型体 通过对内部合金粉末进行取向来制备取向填充成型体的取向处理，从取向填充成型体上除去模具的侧壁，从模具中取出取向填充成型体的步骤，以及对取出的取向填充成型体进行烧结的烧结工艺。 其特征在于，填充过程和对准过程在不同的位置进行，在对准过程中，施加脉冲磁场，并且优选地通过隔板将模具划分为多个腔。', 'KR1020157033878', 1442505600, 'KR101881778B1', 1532448000, 1490284800, NULL, 1531929600, '韩国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 26, 2, 0, 0, 0, NULL, NULL, NULL, '2014197688 | 2014197898', 'JP | JP', 1411833600, 12, 12, NULL, NULL, 3, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2013175735A | KR1020070043782A | KR1020110116757A', NULL, NULL, 1, '\\20220510\\92a9f238e5a24628a441ff6e7aed2ed7.png', NULL, NULL, 1, NULL, NULL, 23, NULL, NULL, NULL, 39980, 39982, 39981, 13);
INSERT INTO `os_patent` VALUES (23412, 'Method for manufacturing rare-earth sintered magnet, and manufacturing device used for said manufacturing method', '稀土烧结磁铁的制造方法及制造方法所使用的制造装置', 'EP3200209B1', 'Provided is a production method and a production device for producing each of the rare earth sintered magnet sintered bodies without carrying a mold in a sintering furnace. The production method comprises a powder feeding step of feeding an alloy powder into a mold having side walls divided into two or more sections; a filling step of filling the alloy powder into the mold to prepare a filled molded-body; an orienting step of orienting the alloy powder in the filled molded-body by applying a magnetic field to the filled molded-body to prepare an oriented filled-molded-body; a retrieving step of detaching the side walls of the mold from the oriented filled-molded-body and retrieving the oriented filled-molded-body from the mold; and a sintering step of sintering the retrieved oriented filled-molded-body, wherein the filling step and the orienting step are performed at different locations, and it is preferred that a pulsed magnetic field is applied in the orienting step and inside of the mold is partitioned into a plurality of cavities by partitions.', '本发明提供一种生产方法和生产装置，用于生产每种稀土烧结磁体烧结体而无需在烧结炉中承载模具。该制造方法包括将合金粉末供给到模具中的粉末供给步骤，该模具具有分成两个或更多个部分的侧壁;将合金粉末填充到模具中以制备填充的模制体的填充步骤;通过向填充的成型体施加磁场以使合金粉末在填充的成型体中取向以制备取向的填充成型体的取向步骤;回收步骤，将模具的侧壁从定向的填充模制体上拆下，并从模具中取出定向的填充模制体;烧结取回的取向填充成型体的烧结步骤，其中填充步骤和取向步骤在不同位置进行，并且优选在取向步骤中施加脉冲磁场，并且在模具内部施加脉冲磁场。通过分区划分成多个腔。', 'EP2015793661', 1442505600, 'EP3200209B1', 1575993600, 1501603200, NULL, 1575993600, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 31, 2, 0, 0, 0, NULL, NULL, NULL, '2014197688 | 2014197898', 'JP | JP', 1411833600, 12, 12, NULL, NULL, 17, 0, 0, 0, 1, NULL, '899', NULL, NULL, NULL, 'DE10131638B4 | EP1788594A1 | EP2244271A1 | EP2434504A1 | JP1995153612A | JP1997097731A | JP2000096104A | JP2001323301A | JP2006019521A | JP2006097090A | JP2008294469A | JP2010240956A | JP2012060139A | WO2009013786A1', NULL, 'KEN OHASHI;YOSHIO TAWARA,RARE EARTH PERMANENT MAGNET,Morikita Shuppan Co., Ltd.,19990000', 1, '\\20220510\\be5eef5e28f4464c990c28e87116f058.png', NULL, NULL, 1, NULL, NULL, 23, NULL, NULL, '有效:DE,FR,GB | 失效:RS,NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,SE,SI,MC,SK,SM,IE,EE,CH,IS,IT,GR,AL,ES,AT,CZ,PL,RO,LI,NL | 未确认:HU,MK,MT,CY,TR', 39980, 39982, 39981, 13);
INSERT INTO `os_patent` VALUES (23413, 'Production method of rare earth sintered magnet and production device used in the production method', '稀土烧结磁体的生产方法及该生产方法所用的生产装置', 'US10629345B2', 'There is provided a production method and a production device for producing each of the rare earth sintered magnet sintered bodies without carrying a mold in a sintering furnace. The method includes feeding an alloy powder into a mold having side walls divided into two or more sections; filling the alloy powder into the mold to prepare a filled molded-body; orienting the alloy powder in the filled molded-body by applying a magnetic field to the filled molded-body to prepare an oriented filled-molded-body; detaching the side walls of the mold from the oriented filled-molded-body and retrieving the oriented filled-molded-body from the mold; and sintering the retrieved oriented filled-molded-body. The filling step and the orienting step are performed at different locations. A pulsed magnetic field can be applied in the orienting step and inside of the mold can be partitioned into a plurality of cavities by partitions.', '提供了一种在不将模具置于烧结炉中的情况下生产每个稀土烧结磁体烧结体的生产方法和生产装置。 该方法包括将合金粉末送入具有划分为两个或更多个部分的侧壁的模具中。 将合金粉末填充到模具中以制备填充的成型体； 通过对填充成型体施加磁场，使合金粉末在填充成型体中取向，从而制备取向的填充成型体。 将模具的侧壁与定向的填充成型体分离，并从模具取下定向的填充成型体； 烧结取回的定向填充成型体。 填充步骤和定向步骤在不同的位置进行。 可以在定向步骤中施加脉冲磁场，并且可以通过分隔物将模具的内部分隔成多个腔。', 'US14/893707', 1442505600, 'US10629345B2', 1587398400, 1475683200, NULL, 1587398400, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 21, 2, 0, 0, 0, NULL, NULL, NULL, '2014197688 | 2014197898', 'JP | JP', 1411833600, 12, 12, NULL, NULL, 39, 0, 0, 0, 4, NULL, '886', NULL, 'WALCK, BRIAN D', NULL, 'CN102422367A | CN1098790A | CN1098790C | DE10131638A1 | DE10131638B4 | EP2244271A1 | JP1986034242A | JP1987192490A | JP1995153612A | JP1997097731A | JP2000096104A | JP2001279092A | JP2001323301A | JP2003050585A | JP2006019521A | JP2006097090A | JP2007200142A | JP2007273241A | JP2008294469A | JP2010122363A | JP2010240956A | JP2012060139A | JP2012091686A | JP2013175735A | JP2013194370A | JP2015044906A | JP2731337B2 | JP4391980B2 | KR1020110116757A | US20070245851A1 | US20120107433A1 | US5725816A | WO2009013786A1 | WO2010013786A1', NULL, 'Extended European Search Report dated Jun. 22, 2018, issued in Patent Application No. 15793661.8 (PCT/JP2015076676). cited by applicant | International Search Report (PCT/ISA/210) and Written Opinion (PCT/ISA/237) dated Sep. 8, 2015 issued in counterpart International patent application No. PCT/JP2015/076676. (6 pages). cited by applicant. | Office Action dated Mar. 15, 2018, issued in Korean Patent Application No. 10-2015-7033878. cited by applicant | Office Action dated Oct. 27, 2017, issued in Chinese Patent Application No. 201580000825.6. cited by applicant', 1, '\\20220510\\d9635051be96416882ea0becb77471c7.png', NULL, NULL, 1, NULL, NULL, 18, NULL, NULL, NULL, 39980, 39982, 39981, 13);
INSERT INTO `os_patent` VALUES (23414, 'VERFAHREN ZUR HERSTELLUNG EINES SELTENERD-SINTERMAGNETS UND HERSTELLUNGSVORRICHTUNG ZUR VERWENDUNG FÜR BESAGTES HERSTELLUNGSVERFAHREN', '用于用于所述制造方法的稀土烧结磁体和制造装置的制造方法', 'DE602015043548T2', 'Provided are a manufacturing method and a manufacturing device for manufacturing individual rare-earth sintered magnet sintered body without transporting a mold into a sintering furnace. The manufacturing method comprises: a powder feed step of feeding alloy powder to a mold having a side wall divided into two or more parts; a filling step of filling the mold with the alloy powder so as to fabricate a filled molding; an orienting step of applying a magnetic field to the filled molding so as to orient the alloy powder in the filled molding and fabricate an oriented filled molding; an extraction step of separating the side wall of the mold from the oriented filled molding and extracting the oriented filled molding from the mold; and a sintering step of sintering the extracted oriented filled molding. The method is characterized in that the filling step and the orienting step are performed at separate locations, wherein preferably, the orienting step includes applying a pulsed magnetic field and the mold is internally divided by a dividing plate into a plurality of cavities.', '本发明提供一种不将铸模搬入烧结炉而制造单独的稀土类烧结磁铁烧结体的制造方法及制造装置。该制造方法包括：粉末供给步骤，将合金粉末供给至具有分成两个或更多个部分的侧壁的模具;填充步骤，用合金粉末填充模具以制造填充模制品;定向步骤，向填充的模制件施加磁场以使合金粉末在填充的模制件中定向并制造定向填充的模制件;提取步骤，将模具的侧壁与定向填充模制件分离，并从模具中取出定向填充模制件;以及对提取出的取向填充成形体进行烧结的烧结工序。该方法的特征在于，填充步骤和定向步骤在分开的位置进行，其中优选地，定向步骤包括施加脉冲磁场，并且模具在内部被分隔板划分成多个空腔。', 'DE602015043548', 1442505600, 'DE602015043548T2', 1575993600, 1575993600, NULL, 1575993600, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 48, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '900', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 23, NULL, NULL, NULL, 39983, 39982, 39984, 13);
INSERT INTO `os_patent` VALUES (23415, 'R-T-B系磁石の製造方法', 'R-T-B型磁铁的制造方法', 'JP6471669B2', '【課題】重希土類元素をできるだけ使用することなく、高いHcJを有するR-T-B系磁石の製造方法の提供。\n\n【解決手段】[T1]/[X]のmol比が13.6以上であることを主たる特徴とするR1-T1-X(R1は主としてNd、T1は主としてFe、Xは主としてB)系合金バルク体を準備する工程、R2-Ga-Cu(R2は主としてPrおよび/またはNdであり65mol%以上95mol%以下、[Cu]/([Ga]+[Cu])がmol比で0.1以上0.9以下)系合金を準備する工程、R1-T1-X系合金バルク体表面の少なくとも一部にR2-Ga-Cu系合金の少なくとも一部を接触させ、450℃以上600℃以下の温度で熱処理する工程、を含む。\n\n【選択図】図1', '[ISS BRORPROSFLAL E ID]cJ提供一种制造R-T-B基磁体的方法。\n\n解决方案:R1-T1-X(R1主要是,Nd,T1主要基于Nd,T1,主要是Nd,T1,主要表征主要是主要的。准备该过程,R2-GA- Cu(R2主要是PR和/或Nd,65摩尔%以上,95mol%或更低,[Cu] / [Ga] + [Cu])在mol比中为0.1或更低0.9或更低)。迈出的步骤制备系统合金,至少一部分R1-T1-X合金体积与R2-Ga-Cu基合金的至少一部分接触,在450℃的温度下热处理。或者更多,600℃或更低,包括。\n\n图1', 'JP2015191753', 1443456000, 'JP6471669B2', 1550592000, 1491408000, NULL, 1548950400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 27, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '田中 崇大', NULL, 'JP2003264115A | JP2008065903A | JP2008263179A | JP2014086529A | JP2014112624A | WO2012036294A1 | WO2015020181A1', NULL, NULL, 1, '\\20220510\\0a71b0feadcd4069afddc21818f81735.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, NULL, 39985, 39987, 39986, 2);
INSERT INTO `os_patent` VALUES (23416, '粉末充填装置およびそれを用いた希土類焼結磁石の製造方法', '粉末填充装置和使用其制造稀土烧结磁体的方法', 'JP6488967B2', '【課題】小型で薄型の焼結磁石片を従来よりも効率良く製造することを可能にする、粉末充填装置およびそれを用いた希土類焼結磁石の製造方法を提供する。\n\n【解決手段】粉末充填装置200は、フィーダボックス60と、支持フレーム70と、可動フレーム80と、支持フレームに固定され第1方向に延びるガイド棒72と、可動フレームをガイド棒に沿って直線状に往復運動させる駆動装置90とを有し、フィーダボックスは、上側開口部62と、上側開口部よりも小さい下側開口部64と、上側開口部から下側開口部に至る側壁とを有し、ガイド棒に沿って可動となるように支持されており、可動フレームは、フィーダボックスを間に介して対向するように配置された2本の作用棒84a、84bを有し、可動フレームが往復運動をさせられたとき、2本の作用棒が交互にフィーダボックスに当たり、フィーダボックスを往復運動させるように構成されている。\n\n【選択図】図3', '本发明的一个目的是提供一种粉末充填装置及其制造使用相同的稀土类烧结磁铁,其更有效地允许小而薄的烧结磁铁片比以往的方法。\n\n解:粉末填充装置200,供料箱60,支撑框架70,固定到支撑框架上的导杆,和在第一方向上延伸的导向杆72,并沿着导向杆的可移动框架具有一个驱动装置90往复运动,并且供料箱有一个下开口62和下开口64比上部开口64更小,并且侧壁从上开口到下开口领先。一个可移动的框架具有两个工作杆84A,84B,其是沿着导杆移动,以及可移动框架具有两个工作杆84A,84B,其被布置成经由一个供料箱为彼此面对,并且可动框架是往返。当运动,两个工作杆是交替地送电箱和配置上往复送电箱。\n\n图3.', 'JP2015193520', 1443542400, 'JP6488967B2', 1553616000, 1491408000, NULL, 1551974400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '豊島 唯', NULL, 'JP1986040740A | JP2000248301A | JP2002160096A | JP2011045929A | WO2013162007A1', NULL, NULL, 1, '\\20220510\\fa6494055aa34cf49078c3fa551cf20c.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 39988, 39990, 39989, 2);
INSERT INTO `os_patent` VALUES (23417, '希土類焼結磁石片の面取り装置および方法、ならびにそれを用いた希土類焼結磁石の製造方法', '稀土烧结磁体片的倒角装置和方法，以及使用该倒角装置和方法制造稀土烧结磁体的方法', 'JP6597205B2', '【課題】従来よりも効率良くR面取りすることができる装置および方法、ならびにそれを用いた希土類焼結磁石の製造方法を提供する。\n\n【解決手段】面取り装置100は、第1遊星ブラシ10a、第2遊星ブラシ10bと、搬送ベルト20と、押えベルト30とを備えている。磁石片1は、搬送ベルト20および押えベルト30との間に安定に保持された状態で搬送される。搬送ベルト20および押えベルト30によって規定される搬送経路の途中に、第1遊星ブラシ10aおよび第2遊星ブラシ10bが配置されている。第1遊星ブラシ10aと第2遊星ブラシ10bとは、搬送経路に対して互いに反対側に配置されており、かつ、第1遊星ブラシ10aと第2遊星ブラシ10bとは互いに対面しないように配置されている。\n\n【選択図】図1', '要解决的问题：提供一种能够比以往更有效地进行R倒角的装置和方法，以及使用该装置和方法的稀土烧结磁体的制造方法。\n\n倒角装置100包括第一行星齿刷10a，第二行星齿刷10b，传送带20和加压带30。磁体片1在被稳定地保持在传送带20和加压带30之间的同时被传送。第一行星齿刷10a和第二行星齿刷10b设置在由传送带20和加压带30限定的传送路径的中间。第一行星齿刷10a和第二行星齿刷10b设置在传送路径的相对侧上，并且第一行星齿刷10a和第二行星齿刷10b设置成彼此不相对它有。', 'JP2015220177', 1447084800, 'JP6597205B2', 1572364800, 1495641600, NULL, 1570723200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 16, 0, 0, 0, 0, NULL, NULL, NULL, '山本 忠博', NULL, 'JP1977150881A | JP1994083248U | JP1995276201A | JP1997174403A | JP2000198056A | JP2002120133A | JP2003019704A | JP2003225848A | JP2010058241A | JP2014208397A | US6206763B1 | WO2007102391A1 | WO2011007758A1 | WO2013108830A1 | WO2014122968A1', NULL, NULL, 1, '\\20220510\\ec2f6d2502684b8593b64f6d2f83b9c8.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39991, 39993, 39992, 2);
INSERT INTO `os_patent` VALUES (23418, '焼結磁石製造方法', '制造烧结磁体的方法', 'JP6280096B2', '(修正有)\n\n【課題】均一に近い充填密度で粉末を容器に充填することができる粉末充填装置を用いた焼結磁石製造方法を提供する。\n\n【解決手段】焼結磁石の原料となる合金粉末を容器30に充填する、ホッパ11の中心側よりも側壁側の方が細かいグリッドが形成されたグリッド部材113が設けられた開口を有するホッパを、開口において容器と連通し且つ容器で開口112を密閉するように容器に装着し、ホッパに合金粉末を供給し、ホッパを容器に装着した状態で、ホッパ内に圧縮不活性ガスをパルス状に繰り返し供給する粉末充填工程と、合金粉末が容器に充填されたままの状態で機械的圧力を印加することなく、合金粉末に磁界を印加させることにより、合金粉末を配向させる配向工程と、合金粉末が容器に充填されたままの状態で機械的圧力を印加することなく、合金粉末を加熱することにより焼結させる焼結工程と、を無酸素雰囲気中で行う。\n\n【選択図】図1', '(纠正)\n\n本发明的一个目的是提供一种使用能够以均匀的填充密度填充粉末的粉末填充装置的烧结磁体制造方法。\n\n溶液:料斗具有栅格构件113,其中栅格构件113设置有栅格构件113,其在该栅格构件113设置有栅格构件113,栅格构件113设置有合金粉末作为烧结磁体的原料到容器30中。在开口,它连接到开口中的容器,并且容器附接到容器,使得开口112被密封,将合金粉末供应到料斗,并且压缩的惰性气体在状态下跳动器脉冲料斗附着在容器上的地方。通过将磁场施加到合金粉末而不将磁场施加到合金粉末而不施加机械压力而不施加机械压力而不施加机械压力而不施加机械压力而不施加机械压力而不施加机械压力而不在合金粉末填充在容器和合金粉末中。通过在将合金粉末加热合金粉末在填充容器的状态下加热合金粉末,通过加热合金粉末,烧结烧结步骤。\n\n图1', 'JP2015237717', 1449158400, 'JP6280096B2', 1518537600, 1465401600, NULL, 1516896000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 3, 0, 0, 0, NULL, NULL, NULL, '2013019891', 'JP', 1359907200, 20, 20, NULL, NULL, 12, 0, 0, 0, 0, NULL, '863', NULL, '井上 健一', NULL, 'JP1982079119U | JP1999049101A | JP2000328102A | JP2002158127A | JP2002160096A | JP2006019521A | JP2006059994A | JP2007501171A | JP2008012741A | JP2010510069A | US20130052290A1 | WO2011142321A1', NULL, NULL, 1, '\\20220510\\f6769e3d424144f6a91d3fc3d0784423.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 39821, 39823, 39822, 22);
INSERT INTO `os_patent` VALUES (23419, 'R-T-B系焼結磁石の製造方法', 'R-T-B基烧结磁体的制备方法', 'JP6477723B2', 'R-T-B系焼結磁石の表面にRLM合金(RLはNdおよび/またはPr、MはCu、Fe、Ga、Co、Ni、Alから選ばれる1種以上の元素)の粉末と、RH化合物(RHはDyおよび/またはTb、RH化合物はRHフッ化物および/またはRH酸フッ化物)の粉末とを存在させた状態において、R-T-B系焼結磁石の焼結温度以下で熱処理を行う工程を含む。RLM合金はRLを50原子%以上含み、かつ、前記RLM合金の融点は前記熱処理の温度以下である。熱処理は、RLM合金の粉末とRH化合物の粉末とが、RLM合金:RH化合物=9.6:0.4〜5:5の質量比率でR-T-B系焼結磁石の表面に存在する状態で行われる。', 'RLM合金(R1是Nd和/或Pr,m是选自Cu,Fe,Ga,Co,Ni,Al)的一种或多种元素,Rh化合物(Rh处于Dy和/或Tb,Rh化合物的状态)含有RH氟化物和/或氢酰氯),它包括低于RTB的烧结磁体的烧结温度的热处理步骤。RLM合金含有50个原子%或更多R1,RLM合金的熔点等于或小于热处理的温度。在RLM合金的粉末和RH化合物的粉末的状态下以RLM合金的质量比存在于R RLM合金的粉末和RH化合物的粉末的状态下进行热处理:RH化合物= 9.6:0.4至5 :5。', 'JP2016563656', 1449158400, 'JP6477723B2', 1551801600, 1505923200, NULL, 1550160000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 0, 1, 0, 0, 0, NULL, NULL, NULL, '2014251405', 'JP', 1418313600, 7, 7, NULL, NULL, 11, 0, 0, 0, 0, NULL, NULL, NULL, '五貫 昭一', NULL, 'JP2007287874A | JP2007287875A | JP2009302119A | JP2010186857A | JP2012248827A | JP2012248828A | JP2016034024A | WO2006112403A1 | WO2013061836A1 | WO2016039352A1 | WO2016039353A1', NULL, NULL, 1, '\\20220510\\a47e59c0180241ce953e33726f0d55dd.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39994, 39996, 39995, 7);
INSERT INTO `os_patent` VALUES (23420, 'R-T-B系焼結磁石の製造方法', 'R-T-B基烧结磁体的制备方法', 'JP6477724B2', 'R-T-B系焼結磁石の表面にRLM合金(RLはNdおよび/またはPr、MはCu、Fe、Ga、Co、Ni、Alから選ばれる1種以上の元素)の粉末と、RH酸化物(RHはDyおよび/またはTb)の粉末とを存在させた状態において、R-T-B系焼結磁石の焼結温度以下で熱処理を行う工程を含む。RLM合金はRLを50原子%以上含み、かつ、前記RLM合金の融点は前記熱処理の温度以下である。熱処理は、RLM合金の粉末とRH酸化物の粉末とが、RLM合金:RH酸化物=9.6:0.4〜5:5の質量比率でR-T-B系焼結磁石の表面に存在する状態で行われる。', 'RLM合金(R1是Nd和/或Pr,m是从Cu,Fe,Ga,Co,Ni,Al)粉末和RH基于RTB的烧结磁体表面的一种或多种元素。存在Dy和/或Tb的粉末的状态,在RTB基烧结磁体的烧结温度下进行热处理的步骤。RLM合金含有50个原子%或更多R1,RLM合金的熔点等于或小于热处理的温度。在RLM合金的质量比的RLM合金和RH氧化物粉末的状态下存在于RLM合金的粉末的状态下进行热处理:RLM合金的质量比:RH氧化物= 9.6:0.4至5 :5。', 'JP2016563657', 1449158400, 'JP6477724B2', 1551801600, 1505923200, NULL, 1550160000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 0, 1, 0, 0, 0, NULL, NULL, NULL, '2014251406', 'JP', 1418313600, 7, 7, NULL, NULL, 11, 0, 0, 0, 0, NULL, NULL, NULL, '五貫 昭一', NULL, 'JP2007287874A | JP2007287875A | JP2009302119A | JP2010186857A | JP2012248827A | JP2012248828A | JP2016034024A | WO2006112403A1 | WO2013061836A1 | WO2016039352A1 | WO2016039353A1', NULL, NULL, 1, '\\20220510\\8154e175897746c591f632a847c4d1f1.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 39997, 39999, 39998, 7);
INSERT INTO `os_patent` VALUES (23421, 'Production method for R-T-B-based sintered magnet', 'R-T-B系烧结磁铁的制造方法', 'US10410776B2', 'A step of, while an RLM alloy powder (where RL is Nd and/or Pr; M is one or more elements selected from among Cu, Fe, Ga, Co, Ni and Al) and an RH oxide powder (where RH is Dy and/or Tb) are present on the surface of a sintered R-T-B based magnet, performing a heat treatment at a sintering temperature of the sintered R-T-B based magnet or lower is included. The RLM alloy contains RL in an amount of 50 at % or more, and the melting point of the RLM alloy is equal to or less than the temperature of the heat treatment. The heat treatment is performed while the RLM alloy powder and the RH oxide powder are present on the surface of the sintered R-T-B based magnet at a mass ratio of RLM alloy:RH oxide=9.6:0.4 to 5:5.', 'RLM合金粉末（其中RL是Nd和/或Pr; M是选自Cu，Fe，Ga，Co，Ni和Al中的一种或多种元素）和RH氧化物粉末（其中RH是Dy）的步骤和/或Tb）存在于RTB系烧结磁铁的表面上，包括在RTB系烧结磁铁的烧结温度下进行热处理。 RLM合金含有50at％或更多的RL，并且RLM合金的熔点等于或小于热处理的温度。在RLM合金粉末和RH氧化物粉末以RLM合金：RH氧化物= 9.6：0.4至5：5的质量比存在于烧结的R-T-B基磁体的表面上的同时进行热处理。', 'US15/533673', 1449158400, 'US10410776B2', 1568044800, 1510761600, NULL, 1568044800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, '2014251406', 'JP', 1418313600, 7, 7, NULL, NULL, 10, 1, 0, 0, 0, NULL, '869', NULL, 'SU, XIAOWEI', NULL, 'JP2007287874A | JP2007287875A | JP2012248827A | JP2012248828A | US20070240789A1 | US20090226339A1 | US20120139388A1 | US20150211138A1 | US20170263379A1 | US20170263380A1', 'US10984114B2', NULL, 1, '\\20220510\\e7f7e6d069f04b10a9d7341598cc15b7.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39997, 39999, 39998, 7);
INSERT INTO `os_patent` VALUES (23422, 'Production method for R—T—B-based sintered magnet', 'R—T—B基烧结磁铁的生产方法', 'US10418171B2', 'A step of, while an RLM alloy powder (where RL is Nd and/or Pr; M is one or more elements selected from among Cu, Fe, Ga, Co, Ni and Al) and an RH compound powder (where RH is Dy and/or Tb; and the RH compound is an RH fluoride and/or an RH oxyfluoride) are present on the surface of a sintered R-T-B based magnet, performing a heat treatment at a sintering temperature of the sintered R-T-B based magnet or lower is included. The RLM alloy contains RL in an amount of 50 at % or more, and the melting point of the RLM alloy is equal to or less than the temperature of the heat treatment. The heat treatment is performed while the RLM alloy powder and the RH compound powder are present on the surface of the sintered R-T-B based magnet at a mass ratio of RLM alloy:RH compound=9.6:0.4 to 5:5.', 'RLM合金粉末（其中RL是Nd和/或Pr; M是选自Cu，Fe，Ga，Co，Ni和Al中的一种或多种元素）和RH化合物粉末（其中RH是Dy）的步骤并且，RH化合物是RH氟化物和/或RH氟氧化物）存在于RTB系烧结磁铁的表面，在RTB系烧结磁铁的烧结温度下进行热处理或者更低。 RLM合金含有50at％或更多的RL，并且RLM合金的熔点等于或小于热处理的温度。在RLM合金粉末和RH化合物粉末以质量比RLM合金：RH化合物= 9.6：0.4至5：5存在于烧结的R-T-B基磁体的表面上的同时进行热处理。', 'US15/533671', 1449158400, 'US10418171B2', 1568649600, 1510156800, NULL, 1568649600, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, '2014251405', 'JP', 1418313600, 7, 7, NULL, NULL, 11, 0, 0, 0, 0, NULL, '869', NULL, 'SU, XIAOWEI', NULL, 'JP2009116548A | JP2009116549A | JP2013121588A | JP2014096549A | US20070240789A1 | US20090226339A1 | US20120139388A1 | US20150211139A1 | US20170183765A1 | US20170263379A1 | US20170263380A1', NULL, NULL, 1, '\\20220510\\f5b077bf544a4aad8ea38c2a421df601.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39994, 39996, 39995, 7);
INSERT INTO `os_patent` VALUES (23423, 'RFeB系焼結磁石の製造方法', '制造RFeB基烧结磁体的方法', 'JP6205511B2', '本発明に係るRFeB系焼結磁石製造方法は、希土類元素Rの含有率が26.5〜29.5重量%であるRFeB系合金塊を700〜1000℃の温度の水素雰囲気中で加熱した後に、750〜900℃の温度に維持しつつ真空にするHDDR処理を行うことにより、電子顕微鏡画像から求められた円相当径による平均粒径が1μm以下である結晶粒の多結晶体から成るHDDR後原料合金塊を作製する工程S1と、HDDR後原料合金塊に、RFeB系合金よりも希土類元素Rの含有率が高い第2合金から成る接触物を接触させた状態で700〜950℃の温度に加熱することにより、希土類高含有原料合金塊を作製する工程S2と、希土類高含有原料合金塊を、平均粒径が1μm以下になるように微粉砕することにより原料合金粉末を作製する工程S3と、原料合金粉末をモールドに収容し、圧縮成形を行うことなく該原料合金粉末に磁界を印加する配向工程S4と、配向工程後の原料合金粉末を850〜1050℃の温度に加熱する焼結工程S5とを有する。', '根据本发明的基于RFEB的烧结磁体制造方法是750至900,并且在温度为700至1000℃的氢气氛中,用RFEB的混合物具有稀土元素r的含量为26.5重量为29.5重量%。通过在保持℃的温度下进行HDDR处理,在℃的温度下,具有从电子显微图像的平均粒径为1μm或更小的晶粒的晶粒的平均粒子质量1μm或更小。通过加热至700至950℃的温度,具有与RFEB基合金具有高含量的稀土元素的第二合金的接触物质和具有第二合金的第二合金的第二合金从RFEB的合金中稀土元素R的含量更高。,步骤S3和原料合金粉末通过制造稀土高原料合金质量,通过细分含稀土的含稀土的原料合金粉末制备原料合金质量。具有烧结步骤S5,该烧结步骤S5将磁场施加到原料合金粉末而不执行压缩成型,并且在将原料合金粉末进行对准步骤至1050°的温度下加热原料合金粉末的烧结步骤S5。 C.', 'JP2016568752', 1452182400, 'JP6205511B2', 1506441600, 1506441600, NULL, 1504800000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 6, 0, 0, 0, NULL, NULL, NULL, '2015003650', 'JP', 1420732800, 6, 6, NULL, NULL, 5, 0, 0, 0, 1, NULL, '863', NULL, '井上 健一', NULL, 'JP2010219499A | JP2014057075A | JP2014099594A | JP5687621B2 | WO2014142137A1', NULL, '宇根康裕、佐川眞人、「結晶粒微細化によるNdFeB焼結磁石の高保磁力化」、日本金属学会誌、第76巻、第1号(2012)12-16、特集「永久磁石材料の現状と将来展望」', 1, '\\20220510\\b5eea32b53cb41b6b1147557fabcc788.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 40000, 40002, 40001, 6);
INSERT INTO `os_patent` VALUES (23424, 'Distance measurement system and distance measuring method', '距离测量系统和距离测量方法', 'IN201644000708A', 'A distance measurement system configured to measure a distance between a first member and a second member which are relatively movable in a predetermined approaching/separating direction.  The system includes a permanent magnet partially fitted to a recessed portion formed on the first member, and a magnetic field sensor fixed to the second member to detect strength of a magnetic field generated by the permanent magnet.  The first member includes a soft magnetic material.  The recessed portion opens towards the second member.  The permanent magnet is fixed by a magnetic attraction force thereof to the first member and is restricted from moving in a direction intersecting with the approaching/separating direction by being fitted to the recessed portion.', '一种距离测量系统，被配置为测量第一构件和第二构件之间的距离，所述第一构件和第二构件在预定的接近/分离方向上可相对移动。该系统包括部分地配合到形成在第一构件上的凹陷部分的永磁体和磁性场传感器固定在第二构件上，用于检测由永磁体产生的磁场强度.a0a0第一构件包括软磁材料.a0a0凹陷部分朝向第二构件开口.a0a0永磁体通过其磁吸力固定。第一构件通过装配到凹陷部分而被限制在与接近/分离方向交叉的方向上移动。', 'IN201644000708', 1452182400, 'IN201644000708A', 1472572800, 1472572800, NULL, NULL, '印度', NULL, NULL, NULL, NULL, 8, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 25, 2, 0, 0, 0, NULL, NULL, NULL, '2015006613', 'JP', 1421337600, 4, 4, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\c2596af555c14cf4a9bc0e4de4a36131.png', NULL, NULL, 1, NULL, NULL, 15, NULL, NULL, NULL, 39900, 39902, 39901, 4);
INSERT INTO `os_patent` VALUES (23425, 'R-T-B系焼結磁石の製造方法', '制造RTB基烧结磁体的方法', 'JP6521391B2', '【課題】HcJの温度係数に優れ、高温においてHcJの低下が少なく、且つ、高いHcJを得ることができるR-T-B系焼結磁石の製造方法を提供すること。\n\n【解決手段】R:29.5〜35.0質量%、B:0.80〜0.90質量%、\n\n Ga:0.1〜0.8質量%、M:0〜2質量%、残部T及び不可避的不純物を含有するR-T-B系焼結磁石素材を準備する工程と、重希土類元素RHを含むRH拡散源と、前記R-T-B系焼結磁石素材とを加熱し、前記RH拡散源から前記R-T-B系焼結磁石素材に重希土類元素RHを拡散させるRH拡散工程と、前記RH拡散工程後のR-T-B系焼結磁石を730〜1020℃の温度に加熱後、5℃/分以上で300℃まで冷却する高温熱処理工程と、前記高温熱処理工程後のR-T-B系焼結磁石を440〜550℃の温度に加熱する低温熱処理工程と、を含むR-T-B系焼結磁石の製造方法。\n\n【選択図】なし', '[问题] hcJ高温温度系数优异cJ低下下降和hcJ为了提供制造可以获得的R-T-B基烧结磁体的方法。\n\nR:29.5至35.0重量%,B:0.80%至0.90%(重量),\n\nGa:0.1至0.8质量%,M:0至2重量%,制备含有残留的T和不可避免的杂质的RTB的烧结磁体材料,RH扩散源包括重稀土元素RH和RTB的RH扩散步骤从RH扩散源向RTB的烧结磁体材料加热并将重型稀土元素RH扩散到基于RTB的烧结磁体材料,在RH扩散过程中为730至1020后,RTB的烧结磁体。加热到温度℃,高温热处理步骤,在5℃/ min或更高的温度下冷却至300℃,并且在高温热处理过程中加热RTB的烧结磁铁的低热处理过程温度为440至550℃,制备炉渣的烧结磁体的制造方法。\n\n[选择图]无', 'JP2016572084', 1453824000, 'JP6521391B2', 1559059200, 1509552000, NULL, 1557417600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, '2015013112', 'JP', 1422288000, 3, 3, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '池田 安希子', NULL, 'JP2007329250A | JP2014027268A | JP2014216462A | WO2011122638A1 | WO2012043061A1', NULL, NULL, 1, '\\20220510\\808fdc45bedb483b87efa0b81becc489.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 40003, 40005, 40004, 3);
INSERT INTO `os_patent` VALUES (23426, '希土類元素を含む鉄系合金微粉末の製造方法、希土類元素を含む鉄系合金微粉末', '含稀土元素的铁基合金细粉的制造方法，含稀土元素的铁基合金细粉', 'JP6578971B2', '【課題】保磁力や耐候性のばらつきが低減され、安定して高い保磁力と優れた耐候性を示す、希土類元素を含む鉄系合金微粉末を製造する方法、及びその希土類元素を含む鉄系合金微粉末を提供する。\n\n【解決手段】本発明に係る希土類元素を含む鉄系合金微粉末の製造方法は、有機溶剤を含む溶媒中で希土類元素を含む鉄系合金粉末を粉砕するとともに、その粉砕に際して燐酸化合物を添加し、表面が燐酸塩皮膜で被覆された微粉末を得る第1の工程と、得られた微粉末に対して所定の温度で加熱処理を施す第2の工程と、を有する。第2の工程では、得られる鉄系合金微粉末の水素含有量が0.2質量%以下となるように、分圧0.1kPa以上5.0kPa以下の酸素を含む雰囲気中で、100℃以上300℃以下の温度条件で加熱処理する。\n\n【選択図】なし', '要解决的问题：提供一种制造含有稀土元素的铁基合金细粉的方法，其具有降低的矫顽力或耐候性变化并且稳定地表现出高矫顽力和优异的耐候性以及含有铁基合金细粉的方法稀土元素。溶剂：含有稀土元素的铁基合金细粉的制造方法，首先在含有机溶剂的溶剂中粉碎含有稀土元素的铁基合金粉末，然后加入稀土元素。粉碎过程中的磷酸化合物，得到表面被磷酸盐涂膜覆盖的细粉末，以及在预定温度下对所得细粉末进行热处理的第二步骤。在第二步骤中，在含氧的气氛中，在分压为0.1kPa至5.0kPa的条件下，在100℃至300℃的温度条件下进行热处理，使得所得铁基合金细粉的氢含量为0.2。质量％或更低。图纸：无', 'JP2016018170', 1454342400, 'JP6578971B2', 1569340800, 1488384000, NULL, 1567699200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 19, 1, 0, 0, 0, NULL, NULL, NULL, '2015165741', 'JP', 1440432000, 2, 2, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '山本 雄一', NULL, 'JP2000208321A | JP2002043109A | JP2002124406A | JP2004111515A | JP2014160794A | WO2008146368A1', NULL, NULL, 1, '\\20220510\\cd0de24acb94499f874994201c44e3e9.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 40006, 40008, 40007, 2);
INSERT INTO `os_patent` VALUES (23427, 'R-T-B系焼結磁石', 'r-t-b烧结磁铁', 'JP6627555B2', '【課題】B量の変化に対するHcJの変化が小さく、かつ高いBrと高いHcJを有するR-T-B系焼結磁石を提供する。\n\n【解決手段】下記式(1)で示される組成が、下記式(2)〜(10)を満足し、uRwBaCxGazAlvCoqTigFejM (1)29.0≦u≦34.0(2)、0.80≦w≦0.92 (3)、0.10≦a≦0.20 (4)、0.3≦x≦0.8 (5)、0.05≦z≦0.5 (6)、0≦v≦3.0 (7)、0.15≦q≦0.29 (8)、58.29≦g≦69.60 (9)、0≦j≦2.0 (10)、gをFeの原子量で割った値をg’、vをCoの原子量で割った値をv’、zをAlの原子量で割った値をz’、wをBの原子量で割った値をw’、aをCの原子量で割った値をa’、qをTiの原子量で割った値をq’としたときに下記式(A)及び(B)を満足することを特徴とする、R-T-B系焼結磁石である。\n\n-0.02≦(g’+ v’+z’)-(14×(w’+ a’-2×q’)) (A)\n\n0.02≧(g’+ v’+z’)-(14×(w’+ a’-q’)) (B)\n\n【選択図】なし', '要解决的问题：提供基于RTB的烧结，其中H  cJ 相对于B量的变化具有小的变化并且具有高B  r 和高H  cJ 提供磁铁。\n\n溶液：由下式（1）表示的组成满足下式（2）至（10），uRwBaCxGazAlv CoqTigFejM（1）29.0≤u≤34.0（2），0.80≤w≤0.92（3） 0.10≤a≤0.20（4），0.3≤x≤0.8（5），0.05≤z≤0.5（6），0≤v≤3.0（7），0.15≤q≤0.29（8），58.29≤g≤69.60 （9），0≤j≤2.0（10），将g除以Fe的原子量得到的值为g\'，将v除以Co的原子量得到的值为v\'，将z除以Al的原子量得到的值为z \'，将w除以B的原子量得到的值为w\'，将a除以C的原子量得到的值为a\'，将q除以Ti的原子量得到的值为q\'，下式（A）和（B）满足，其中烧结磁体是RTB基烧结磁体。\n\n-0.02≦（g\'+ v\'+ z\'） - （14×（w\'+ a\' -  2×q\'））（A）\n\n0.02≧（g\'+ v\'+ z\'） - （14×（w\'+ a\' -  q\'））（B）\n\n【选择图】无', 'JP2016025792', 1455465600, 'JP6627555B2', 1578412800, 1478707200, NULL, 1576166400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 0, 4, 0, 0, 0, NULL, NULL, NULL, '2015068689', 'JP', 1427644800, 2, 4, NULL, NULL, 10, 0, 0, 0, 0, NULL, NULL, NULL, '井上 健一', NULL, 'JP1993021218A | JP2000331810A | JP2006210893A | JP2008264875A | JP2011021269A | US20060137767A1 | WO2013008756A1 | WO2013191276A1 | WO2015020180A1 | WO2016133067A1', NULL, NULL, 1, '\\20220510\\8078dade69f545da8a27e63b3c09555d.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 40009, 40011, 40010, 4);
INSERT INTO `os_patent` VALUES (23428, 'Verfahren zum Herstellen eines R-T-B-basierten gesinterten Magneten', '制造R-T-B基烧结磁体的方法', 'DE112016000798T5', 'Ein Schritt des Bereitstellens eines R1-T1-X (wobei R1 im Wesentlichen Nd ist; T1 im Wesentlichen Fe ist; und X im Wesentlichen B ist) basierter gesinterter Legierungspresskörper, welcher im Wesentlichen gekennzeichnet ist durch ein Molverhältnis von [T1]/[X] von 13,0 oder mehr; ein Schritt des Bereitstellens einer R2-Ga-Cu (wobei R2 im Wesentlichen Pr und/oder Nd ist und nicht weniger als 65 Mol% und nicht mehr als 95 Mol% ausmacht; und ein Molverhältnis von [Cu]/([Ga] + [Cu]) nicht weniger als 0,1 und nicht mehr als 0,9 ist) basierten Legierung; und, während zugelassen wird, dass wenigstens ein Teil einer Oberfläche des R1-T1-X-basierten gesinterten Legierungspresskörpers mit wenigstens einem Teil der R2-Ga-Cu-basierten Legierung in Kontakt kommt, einen Schritt des Durchführens einer Hitzebehandlung bei einer Temperatur von nicht weniger als 450°C und nicht mehr als 600°C.', '提供R1-T1-x的步骤(其中R1基本上是Nd; T1基本上是Fe; x是基本上为B)的烧结合金保护体,其基本上以摩尔比为[t1] / [x]的摩尔比。 13.0或更多;提供R2-Ga-Cu的步骤(其中R2基本上是Pr和/或Nd,并且不小于65摩尔%且不大于95摩尔%;和[Cu] /([Ga] + [ Cu]))不小于0.1且不大于0.9)的合金;并且,虽然批准R1-T1-X型烧结合金饲料体的至少一部分包括与至少一部分R2-GA-Cu基合金的接触,但是执行A的步骤在不小于450°C的温度下热处理,不超过600℃。', 'DE112016000798', 1455552000, 'DE112016000798T5', 1508947200, 1508947200, NULL, NULL, '德国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'T5', NULL, NULL, 39, 4, 0, 0, 0, NULL, NULL, NULL, '2015029204 | 2015113567 | 2015150586', 'JP | JP | JP', 1424188800, 7, 7, NULL, NULL, 3, 0, 0, 0, 0, NULL, '895', NULL, NULL, NULL, 'EP2270822A1 | WO2015020181A1 | WO2015020183A1', NULL, NULL, 1, '\\20220510\\2a1af3e7024f4e82832732ece8ca4111.png', NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 40012, 40014, 40013, 7);
INSERT INTO `os_patent` VALUES (23429, 'R-T-B系焼結磁石の製造方法', 'R-T-B基烧结磁体的制备方法', 'JP6361813B2', '[T1]/[X]のmol比が13.0以上であることを主たる特徴とするR1-T1-X(R1は主としてNd、T1は主としてFe、Xは主としてB)系合金焼結体を準備する工程、R2-Ga-Cu(R2は主としてPrおよび/またはNdであり65mol%以上95mol%以下、[Cu]/([Ga]+[Cu])がmol比で0.1以上0.9以下)系合金を準備する工程、R1-T1-X系合金焼結体表面の少なくとも一部にR2-Ga-Cu系合金の少なくとも一部を接触させ、450℃以上600℃以下の温度で熱処理する工程、を含む。', '[t1] / [x] mol比主要特征在于13.0或更多R1-T1-x(R1主要,Nd,T1主要,Fe,x主要基于Fe,x主要是b)合金烧结体。步骤,R2- Ga-Cu(R2主要是PR和/或Nd,65摩尔%以上,95摩尔%或更低,[Cu] /([Ga] + [Cu])是摩尔中的0.1或更高的0.9或更低的合金比例。步骤制备R1-T1-X基合金烧结体表面的至少一部分,接触至少一部分R2-GA-Cu基合金和在450℃的温度下的热处理更多和600°C.或更低。', 'JP2017500676', 1455552000, 'JP6361813B2', 1532448000, 1509552000, NULL, 1530806400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 29, 4, 0, 0, 0, NULL, NULL, NULL, '2015029204 | 2015113567 | 2015150586', 'JP | JP | JP', 1424188800, 7, 7, NULL, NULL, 7, 3, 0, 0, 0, NULL, NULL, NULL, '池田 安希子', NULL, 'JP2008263179A | JP2014086529A | JP2014112624A | JP2014150119A | WO2011070847A1 | WO2012036294A1 | WO2015020180A1', 'JP2018029108A | JP6610957B2 | JP6624455B2', NULL, 1, '\\20220510\\3e75cb91ad2c41bfaf21221b0f89f89b.png', NULL, NULL, 1, NULL, NULL, 18, NULL, NULL, NULL, 40012, 40014, 40013, 7);
INSERT INTO `os_patent` VALUES (23430, 'R-T-B系焼結磁石の製造方法', 'RTB系烧结磁铁的制造方法', 'JP6489201B2', '【課題】磁石内部の二粒子粒界まで厚くすることができ、表面研削によっても保磁力向上効果が大きく損なわれることがない、重希土類元素を用いずとも高い保磁力を有するR-T-B系焼結磁石の製造方法の提供。\n\n【解決手段】Ti/(X-2A)のmol比が13以上であることを主たる特徴とするR1-T1-A-X(R1は主としてNd、T1は主としてFe、AはGa、Ti、Zr、Hf、V、Nb、Moのうち少なくとも一種、Xは主としてB)系合金焼結体を準備する工程、R2-Ga-Cu(R2は主としてPrおよび/またはNdであり65mol%以上95mol%以下、Cu/(Ga+Cu)がmol比で0.1以上0.9以下)系合金を準備する工程、R1-T1-A-X系合金焼結体表面の少なくとも一部にR2-Ga-Cu系合金の少なくとも一部を接触させ、450℃〜600℃の温度で熱処理する工程を含む。\n\n【選択図】図1', '即使在没有损害的情况下,即使矫顽力改善效果也不损害,即使均匀的矫顽力也没有损害,即使均匀的矫顽力也没有损害,即使均匀的矫顽力也没有损害,即使均匀的矫顽力也不会损害,即使甚至通过表面磨削,也没有损害,即使矫顽力,即使通过表面磨削也不会受到损害,矫顽力也不能即使通过表面研磨也不能损害矫顽力的矫顽力,即使矫顽力也不会受损。提供制造方法。\n\n解决方案:R1-T1-AX(R1 L1主要是Nd,T1主要是Fe,A主要是Fe,A,T1,Ti,Zr,HF,L,V,Nb,Mo,至少一个,x主要是b )制备B)-Almer烧结体,R2-Ga-Cu(R2主要是Pr和/或Nd和65摩尔%或更低,Cu /(Ga + Cu)时,Cu的0.1或更高0.9或更少)摩尔合金比以摩尔比,R1-T1-轴合金烧结体表面的至少一部分是R2-GA-Cu合金接触和在450℃的温度下的热处理的至少一部分。到600℃\n\n图1', 'JP2017500682', 1455552000, 'JP6489201B2', 1553616000, 1511452800, NULL, 1551974400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 21, 3, 0, 0, 0, NULL, NULL, NULL, '2015029205', 'JP', 1424188800, 6, 6, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '五貫 昭一', NULL, 'JP2008263179A | JP2011014668A | JP2014086529A | JP2014112624A | JP2015153813A', NULL, NULL, 1, '\\20220510\\6fb53ed8e6f5418994be20d5a96daae5.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40015, 40017, 40016, 6);
INSERT INTO `os_patent` VALUES (23431, 'R-T-B系焼結磁石の製造方法', 'r-t-b烧结磁铁的制造方法', 'JP6642838B2', '【課題】DyやTbの含有量を抑制しつつ、高いBrと高いHcJを有するR-T-B系焼結磁石の製造方法の提供。\n\n【解決手段】添加合金粉末と主合金粉末とを混合した後、成形、焼結、熱処理する方法によって、特定の範囲で、R、B、Ga、Cu、Al及び必要に応じてMを含有させた、R-T-B系焼結磁石の製造方法であって、特定組成の厚さ0.12mm以下の原料合金を用いて作製された添加合金粉末と、Ga含有量が0.4質量%以下である主合金粉末とを、添加合金粉末と主合金粉末の合計100質量部に対して添加合金粉末を0.5〜10質量部混合する。\n\n【選択図】図1', '要解决的问题:抑制dy和tb的内容,高br和高H.cJ由生产R-T-B基烧结磁体的方法提供。\n\n溶液:混合添加剂合金粉末和主栅极粉末后,可以通过形成,烧结和热处理的方法形成,B,Ga,Cu,Al,以及必要的话。在RTB的烧结的制造方法中磁体,使用厚度为0.12mm或更小的原料合金和Ga含量为0.4质量%以下的主要储备粉末制备的添加合金粉末。总共0.5至10质量份的添加合金将粉末混合,总共100质量份添加的合金粉末和主金粉。\n\n图1', 'JP2017500674', 1455552000, 'JP6642838B2', 1581436800, 1511971200, NULL, 1578412800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 0, 4, 0, 0, 0, NULL, NULL, NULL, '2015028435', 'JP', 1424102400, 3, 3, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '久保田 昌晴', NULL, 'JP1995130522A | JP2002038245A | JP2013084890A | WO2013008756A1 | WO2014157448A1 | WO2015020183A1 | WO2015022946A1', NULL, NULL, 1, '\\20220510\\e206592d0d184ce595e4664a691c0bd6.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40018, 40020, 40019, 3);
INSERT INTO `os_patent` VALUES (23432, 'R-T-B系焼結磁石の製造方法', 'R-T-B基烧结磁体的制备方法', 'JP6037093B1', '本開示のR-T-B系焼結磁石の製造方法は、複数個のR-T-B系焼結磁石素材(Rは希土類元素のうち少なくとも一種でありNd及び/又はPrを必ず含む、Tは遷移金属元素のうち少なくとも一種でありFeを必ず含む)を準備する工程と、重希土類元素RH(重希土類元素RHはTb及び/又はDy)を20質量%以上80質量%以下含有する、大きさが90μm以下の複数個の合金粉末粒子を準備する工程と、前記複数個のR-T-B系焼結磁石素材と、前記複数個のR-T-B系焼結磁石素材に対して重量比率で2%以上15%以下の前記複数個の合金粉末粒子とを処理容器内に装入する工程と、前記処理容器を加熱すると共に回転及び/又は揺動させることにより、前記R-T-B系焼結磁石素材と前記合金粉末粒子を連続的に又は断続的に移動させてRH供給拡散処理を行う工程とを含む。', '根据本公开的制造基于RTB的烧结磁体的方法是多个基于RTB的烧结磁体材料(R是稀土元素中的至少一个,并且总是包括ND和/或PR,并且T是至少至少一种过渡金属元件制备和提供Fe的步骤并始终包含20质量%或更高的重稀土元素RH(TB和/或Dy),或者少于80质量%,以及尺寸90μm以下是90μm或更小。制备将粉末颗粒充电进入加工容器的步骤和处理容器的步骤以及连续或间歇地摆动和/或摆动上述RTB的步骤基于烧结磁体材料和合金粉末颗粒,它包括移动到RH供应扩散加工的步骤。', 'JP2016548202', 1456156800, 'JP6037093B1', 1480435200, 1480435200, NULL, 1478793600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 22, 2, 0, 0, 0, NULL, NULL, NULL, '2015037790 | 2015189773', 'JP | JP', 1424966400, 10, 10, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '井上 健一', NULL, 'JP2012169436A | JP2014072259A | WO2006043348A1 | WO2007102391A1 | WO2011007758A1 | WO2012043692A1', NULL, NULL, 1, '\\20220510\\21de9678d7624ce486ac4da5972a476e.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, NULL, 40021, 40023, 40022, 11);
INSERT INTO `os_patent` VALUES (23433, 'Method for manufacturing r-t-b based sintered magnet', 'r-t-b基烧结磁铁的制造方法', 'EP3211647B1', 'A method for producing a sintered R-T-B based magnet of this disclosure includes the steps of preparing a plurality of sintered R-T-B based magnet bodies (R is at least one of rare earth elements and necessarily contains Nd and/or Pr; and T is at least one of transition metals and necessarily contains Fe); preparing a plurality of alloy powder particles having a size of 90 µm or less and containing a heavy rare earth element RH (the heavy rare earth RH is Tb and/or Dy) at a content of 20 mass% or greater and 80 mass% or less; loading the plurality of sintered R-T-B based magnet bodies and the plurality of alloy powder particles of a ratio of 2% by weight or greater and 15% by weight or less with respect to the plurality of sintered R-T-B based magnet bodies into a process chamber; and heating, while rotating and/or swinging, the process chamber to move the sintered R-T-B based magnet bodies and the alloy powder particles continuously or intermittently to perform an RH supply and diffusion process.', '本发明的RTB系烧结磁体的制造方法包括制备多个RTB系烧结磁体的步骤（R为稀土元素中的至少一种，必须含有Nd和/或Pr; T为至少一个过渡金属，必然含有Fe）;制备多个尺寸为90μm或更小且含有重稀土元素RH（重稀土RH为Tb和/或Dy）的合金粉末颗粒，其含量为20质量％或更高且80质量％或减;将多个烧结的R-T-B基磁体和多个合金粉末颗粒相对于多个烧结的R-T-B基磁体加载到处理室中，所述多个合金粉末颗粒和多个合金粉末颗粒的比例为2重量％以上且15重量％以下。在旋转和/或摆动的同时，加热处理室以连续地或间歇地移动烧结的R-T-B基磁体和合金粉末颗粒，以进行RH供给和扩散过程。', 'EP2016755449', 1456156800, 'EP3211647B1', 1537286400, 1504022400, NULL, 1537286400, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 25, 2, 0, 0, 0, NULL, NULL, NULL, '2015189773 | 2015037790', 'JP | JP', 1443369600, 10, 10, NULL, NULL, 9, 0, 0, 0, 0, NULL, '894', NULL, NULL, NULL, 'EP2455954A1 | JP2012109369A | JP2012169436A | JP2014072259A | US20130171342A1 | WO2006043348A1 | WO2007102391A1 | WO2011007758A1 | WO2012043692A1', NULL, NULL, 1, '\\20220510\\608ae7d9b3874dbcb7e69bed637962c3.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, '有效:DE | 失效:RS,NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,FR,HU,SE,SI,MC,SK,SM,GB,IE,EE,CH,MT,IS,IT,GR,AL,ES,AT,CY,CZ,PL,RO,LI,TR,NL | 未确认:MK', 40021, 40023, 40022, 11);
INSERT INTO `os_patent` VALUES (23434, 'Method for manufacturing R-T-B based sintered magnet', 'R-T-B系烧结磁铁的制造方法', 'US10217562B2', 'A method for producing a sintered R-T-B based magnet of this disclosure includes the steps of preparing a plurality of sintered R-T-B based magnet bodies (R is at least one of rare earth elements and necessarily contains Nd and/or Pr; and T is at least one of transition metals and necessarily contains Fe); preparing a plurality of alloy powder particles having a size of 90 μm or less and containing a heavy rare earth element RH (the heavy rare earth RH is Tb and/or Dy) at a content of 20 mass % or greater and 80 mass % or less; loading the plurality of sintered R-T-B based magnet bodies and the plurality of alloy powder particles of a ratio of 2% by weight or greater and 15% by weight or less with respect to the plurality of sintered R-T-B based magnet bodies into a process chamber; and heating, while rotating and/or swinging, the process chamber to move the sintered R-T-B based magnet bodies and the alloy powder particles continuously or intermittently to perform an RH supply and diffusion process.', '本发明的RTB系烧结磁体的制造方法包括制备多个RTB系烧结磁体的步骤（R为稀土元素中的至少一种，必须含有Nd和/或Pr; T为至少一个过渡金属，必然含有Fe）;制备多个尺寸为90μm或更小且含有重稀土元素RH（重稀土RH为Tb和/或Dy）的合金粉末颗粒，其含量为20质量％或更高且80质量％或减;将多个烧结的R-T-B基磁体和多个合金粉末颗粒相对于多个烧结的R-T-B基磁体加载到处理室中，所述多个合金粉末颗粒和多个合金粉末颗粒的比例为2重量％以上且15重量％以下。在旋转和/或摆动的同时，加热处理室以连续地或间歇地移动烧结的R-T-B基磁体和合金粉末颗粒，以进行RH供应和扩散过程。', 'US15/528781', 1456156800, 'US10217562B2', 1551110400, 1510156800, NULL, 1551110400, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 17, 2, 0, 0, 0, NULL, NULL, NULL, '2015189773 | 2015037790', 'JP | JP', 1443369600, 10, 10, NULL, NULL, 18, 0, 0, 0, 0, NULL, '869', NULL, 'SU, XIAOWEI', NULL, 'JP2012169436A | JP2014072259A | US20050183791A1 | US20080245442A1 | US20080286595A1 | US20100282371A1 | US20120112863A1 | US20130171342A1 | US9368276B2 | US9415444B2 | US9478332B2 | US9613748B2 | WO2006043348A1 | WO2007102391A1 | WO2011007758A1 | WO2012008426A1 | WO2012043692A1 | WO2013002170A1', NULL, NULL, 1, '\\20220510\\e79c4f25ee7e4aad85405e68eb478ea5.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, NULL, 40021, 40023, 40022, 11);
INSERT INTO `os_patent` VALUES (23435, 'VERFAHREN ZUR HERSTELLUNG VON SINTERMAGNETEN AUF R-T-B-BASIS', '在R-T-B基础上生产烧结磁体的方法', 'DE602016005785T2', 'Disclosed is a method for manufacturing an R-T-B based sintered magnet, said method comprising: a step for preparing a plurality of starting materials of the R-T-B based sintered magnet (wherein R is at least one member of rare earth elements and essentially comprises Nd and/or Pr, and T is at least one member of transition metal elements and essentially comprises Fe); a step for preparing a plurality of alloy powder grains that contain 20-80 mass% inclusive of a heavy rare earth element RH (wherein the heavy rare earth element RH comprises Tb and/or Dy) and have a grain size of not more than 90 μm; a step for loading into a treatment container the aforesaid starting materials of the R-T-B based sintered magnet and 2-15 wt% inclusive, relative to the starting materials of the R-T-B based sintered magnet, of the aforesaid alloy powder grains; and a step for supplying and diffusing RH by heating and simultaneously rotating and/or oscillating the treatment container to thereby continuously or intermittently move the starting materials of the R-T-B based sintered magnet and the alloy powder grains.', '本发明公开了一种制造RTB基烧结磁体的方法，所述方法包括：制备RTB基烧结磁体的多种起始材料的步骤（其中R是稀土元素的至少一种并且基本上包含Nd和/或Pr和T是过渡金属元素中的至少一种，并且基本上包含Fe）;制备多种合金粉末颗粒的步骤，所述合金粉末颗粒含有20-80质量％，包括重稀土元素RH（其中重稀土元素RH包含Tb和/或Dy）并且具有不大于90的粒度微米;将上述合金粉末颗粒相对于R-T-B基烧结磁体的起始材料加载到处理容器中的上述R-T-B基烧结磁体的原料和2-15wt％（含）的步骤;以及通过加热提供和扩散RH并同时旋转和/或振荡处理容器从而连续或间歇地移动R-T-B基烧结磁体和合金粉末颗粒的起始材料的步骤。', 'DE602016005785', 1456156800, 'DE602016005785T2', 1537286400, 1537286400, NULL, 1537286400, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 37, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '895', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, NULL, 40024, 40023, 40025, 11);
INSERT INTO `os_patent` VALUES (23436, 'R-T-B系焼結磁石の製造方法', 'R-t-b烧结磁铁的制造方法', 'JP6597389B2', '【課題】R-T-B系焼結磁石の改質を行うための粉末粒子を含むペーストをR-T-B系焼結磁石の複数の面に対して同時に塗布する。\n\n【解決手段】本開示のR-T-B系焼結磁石の製造方法は、平行な第1主面および第2主面を有する平板状の複数のR-T-B系焼結磁石(Rは希土類元素、TはFeを必ず含む遷移元素)1を用意する工程Aと、複数の吸引孔を有するトレイの上面に、第2主面が接するように複数のR-T-B系焼結磁石1を配列する工程B1と、複数の吸引孔を介して各R-T-B系焼結磁石1をトレイに吸引しながら、スクリーン印刷により、各R-T-B系焼結磁石の第1主面および側面に対して重希土類元素RHの金属、合金および/または化合物(RHはDyおよび/またはTb)の粉末粒子を含むペーストを塗布する工程C1と、重希土類元素RHを各R-T-B系焼結磁石1に拡散させる工程Dとを含む。\n\n【選択図】図1F', '解决的问题：将包含用于改性R-T-B系统烧结磁体的粉末颗粒的糊剂同时施加到R-T-B系统烧结磁体的多个表面上。\n\n 根据本公开的用于制造基于RTB的烧结磁体的方法包括具有平行的第一和第二主表面的多个平板状基于RTB的烧结磁体（R是稀土元素并且T是Fe）。  （必须包括的过渡元件）1被准备，在步骤B1中，配置多个RTB烧结磁铁1，以使第二主面与具有多个吸引孔和多个吸引孔的托盘的上表面抵接。 在通过孔将每个RTB烧结磁体1通过孔吸引到托盘的同时，通过丝网印刷将重稀土元素RH的金属，合金和/或化合物相对于每个RTB烧结磁体的第一主表面和侧面。  （RH是Dy和/或Tb）包括施加包含粉末颗粒的糊剂的步骤C1和将重稀土元素RH扩散到每个RTB系统烧结磁体1中的步骤D。\n\n [选择图]图1F', 'JP2016035047', 1456416000, 'JP6597389B2', 1572364800, 1475683200, NULL, 1570723200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 17, 2, 0, 0, 0, NULL, NULL, NULL, '2015054550', 'JP', 1426608000, 2, 2, NULL, NULL, 16, 0, 0, 0, 0, NULL, NULL, NULL, '井上 健一', NULL, 'JP1986285794A | JP1994351220A | JP2002038202A | JP2005150225A | JP2006278462A | JP2007090195A | JP2007266226A | JP2007287874A | JP2007287875A | JP2011078270A | JP2012248827A | JP2012248828A | US20130153088A1 | WO2013015047A1 | WO2013061836A1 | WO2014148353A1', NULL, NULL, 1, '\\20220510\\efc8d44e9d6949f9aaa66aae0501c682.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40026, 40028, 40027, 2);
INSERT INTO `os_patent` VALUES (23437, 'R-T-B系焼結磁石の製造方法', 'r-t-b烧结磁铁的制造方法', 'JP6600875B2', '【課題】熱処理の過程で塗布膜の剥がれを防止し、塗布膜中の粉末粒子から所望の元素を希土類焼結磁石に拡散させる。\n\n【解決手段】本発明の実施形態におけるR-T-B系焼結磁石の製造方法は、R-T-B系焼結磁石を用意する工程と、金属粉末および金属化合物粉末が混合された混合粉末と高分子組成物とを含むペーストの塗布膜を前記R-T-B系焼結磁石の表面に形成する工程と、前記塗布膜が前記表面に形成された前記R-T-B系焼結磁石に対する熱処理を行うことによって前記塗布膜中の金属成分を前記R-T-B系焼結磁石の内部に拡散させる工程とを含み、前記高分子組成物は、2,2,4-トリメチル-1,3-ペンタンジオールモノイソブチレートを含む基油とバインダとカップリング剤とを含む。\n\n【選択図】図1A', '要解决的问题：为了防止热处理过程中涂膜剥落，将所需元素从涂膜中的粉末颗粒扩散到稀土烧结磁体中。\n\n在本发明的一个实施例的制造RTB系烧结磁铁的方法，包括：准备一个RTB系烧结磁铁的步骤，一个的聚合物组合物混合粉末的金属粉末和金属化合物粉末混合之前通过执行RTB系烧结磁铁，在RTB系烧结磁铁的热处理，其特征在于，该表面包括上形成的涂层膜的表面上形成糊状物的涂膜的工序以及将涂膜中的金属组分扩散到RTB基烧结磁体内部的步骤，其中聚合物组合物包含2,2,4-三甲基-1,3-戊二醇单异丁酸酯粘合剂和偶联剂。', 'JP2016044263', 1457366400, 'JP6600875B2', 1572969600, 1505318400, NULL, 1571328000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, '秋山 直人', NULL, 'JP2008263179A | JP2009302119A | JP2010533379A | JP2012216533A | JP2012248827A | JP2012248828A | JP2013196954A | JP2014078672A | WO2006043348A1 | WO2014148355A1 | WO2015163397A1', 'CN110164644A', NULL, 1, '\\20220510\\13e481f9b69548d2bfde9aca2ea103e3.png', NULL, NULL, 2, NULL, NULL, 7, NULL, NULL, NULL, 40029, 40031, 40030, 2);
INSERT INTO `os_patent` VALUES (23438, 'R-T-B系焼結磁石の製造方法、当該方法に使用される塗布デバイスおよび塗布装置', '制造RTB基烧结磁体的方法，涂覆装置和该方法中使用的涂覆装置', 'JP6489205B2', 'R-T-B系焼結磁石の各々の上面、下面および側面に、重希土類元素RHの金属、合金および/または化合物(RHはDyおよび/またはTb)の粉末粒子を含むペーストを塗布する工程と、ペーストが塗布されたR-T-B系焼結磁石を焼結温度以下の温度で熱処理する工程とを含む。ペーストを塗布する工程は、入口開口部および出口開口部を有する内部空間を備える塗布デバイスであってR-T-B系焼結磁石が、順次、内部空間を横方向に通過するように構成された塗布デバイスに対して、R-T-B系焼結磁石を順次供給する工程と、塗布装置の内部空間にペーストを充填し、内部空間内を移動しつつあるR-T-B系焼結磁石の上面、下面および側面にペーストを接触させる工程とを含む。', '施加含有金属,合金和/或黄色和/或黄色和/或TH)的金属,合金和/或黄色和/或Tb)的浆料的步骤,合金和/或化合物(RH Dy和/或Tb )金属,合金和/或化合物(RH是Dy和/或Tb)金属,合金和/或化合物(RH Dy和/或Tb)上表面上的粉末颗粒,下表面和侧面RTB的烧结磁体。涂覆的RTB基烧结磁体在低于烧结温度的温度下进行热处理。施加浆料的步骤是配备有具有入口开口和出口开口的内部空间的涂覆装置,并且依次配置RTB的烧结磁体以横向通过内部空间。为了顺序供电基于RTB烧结磁体,浆料填充在涂布装置的内部空间中,并且浆料与上表面,上表面,上表面和侧面接触,该烧结磁体在内部空间中移动。该过程是包括。', 'JP2017506482', 1457452800, 'JP6489205B2', 1553616000, 1513785600, NULL, 1551974400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 30, 2, 0, 0, 0, NULL, NULL, NULL, '2015051025', 'JP', 1426176000, 5, 5, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '五貫 昭一', NULL, 'JP2007287874A | JP2007287875A | JP2008284528A | JP2011223663A | JP2012248827A | JP2012248828A', NULL, NULL, 1, '\\20220510\\7dbf67c884904e209aca7dbac387c9d6.png', NULL, NULL, 1, NULL, NULL, 22, NULL, NULL, NULL, 40032, 40034, 40033, 5);
INSERT INTO `os_patent` VALUES (23439, 'Magnetic-field-generating apparatus for magnetron sputtering', '用于磁控溅射的磁场发生装置', 'US10280503B2', 'A racetrack-shaped apparatus for generating a magnetic field on a target surface for magnetron sputtering, comprising on a magnetic base (a) a vertically magnetized center permanent magnet arranged straight; (b) vertically magnetized peripheral permanent magnets surrounding the center permanent magnet; (c) vertically magnetized first intermediate permanent magnets, horizontally magnetized second intermediate permanent magnets and vertically magnetized third intermediate permanent magnets arranged on both sides of the center permanent magnet; and (d) vertically magnetized fourth intermediate permanent magnets arranged separately from both longitudinal ends of the center permanent magnet; each second intermediate permanent magnet being arranged with one magnetic pole opposing a near-target side surface portion of each first intermediate permanent magnet.', '一种用于在磁控溅射的目标表面上产生磁场的跑道形装置，包括在磁性基座上（a）直线排列的垂直磁化的中心永磁​​体; （b）围绕中心永磁体的垂直磁化的外围永磁体; （c）垂直磁化的第一中间永磁体，水平磁化的第二中间永磁体和布置在中心永磁体两侧的垂直磁化的第三中间永磁体; （d）垂直磁化的第四中间永磁体，与中心永磁体的两个纵向端分开设置;每个第二中间永磁体布置有一个磁极，该磁极与每个第一中间永磁体的近目标侧表面部分相对。', 'US15/547541', 1457625600, 'US10280503B2', 1557158400, 1516809600, NULL, 1557158400, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 18, 1, 0, 0, 0, NULL, NULL, NULL, '2015056455', 'JP', 1426694400, 5, 5, NULL, NULL, 6, 0, 0, 0, 1, NULL, '870', NULL, 'BRAYTON, JOHN J', NULL, 'JP1991257162A | JP1992063273A | JP2004083974A | JP2014210967A | JP2015147955A | US5262028A', NULL, 'International Search Report of PCT/JP2016/057752 dated May 10, 2016 [PCT/ISA/210]. cited by applicant.', 1, '\\20220510\\3bdbdb81824a486bba5326dff823e42e.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 40035, 40037, 40036, 5);
INSERT INTO `os_patent` VALUES (23440, 'マグネトロンスパッタリング用磁場発生装置', '用于磁控溅射的磁场发生器', 'JP6607251B2', 'ターゲット表面に磁場を発生させるためのレーストラック形状のマグネトロンスパッタリング用磁場発生装置であって、磁性体からなるベース上に、(a)直線状に配置された中央部永久磁石(垂直方向に磁化)と、(b)中央部永久磁石を取り囲むように配置された外周部永久磁石(垂直方向に磁化)と、(c)中央部永久磁石の両側に配置された第一の中間部永久磁石(垂直方向に磁化)、第二の中間部永久磁石(水平方向に磁化)及び第三の中間部永久磁石(垂直方向に磁化)と、(d)中央部永久磁石の長手方向両端部から離間して配置された第四の中間部永久磁石(垂直方向に磁化)とを有し、第二の中間部永久磁石は一方の磁極が第一の中間部永久磁石のターゲット寄り側面と対向するように配置されることを特徴とする。', '用于磁控溅射的磁场产生装置,用于在目标表面上产生磁场,中央永磁体(a)在由磁体组成的基部上的中心永磁​​体(沿垂直方向),(a)线性布置和(b)外周永磁体(垂直方向上的磁化)布置成环绕中心永磁体,(c)(c)设置在中央永磁体(方向垂直磁化的垂直磁化)的两侧上的第一中间永磁体。第二中间永磁体(水平方向)和第三中间永磁体(垂直方向上的磁化)和(d)中央永磁体的纵向端部来自两端的第二中间永磁体(垂直磁化)被布置,第二个中间永磁体(垂直磁化)和第二个中间永磁体布置成使得一个磁极面向第一中间永磁体的靶。它的特征在于它是', 'JP2017506523', 1457625600, 'JP6607251B2', 1574179200, 1515600000, NULL, 1572537600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, '2015056455', 'JP', 1426694400, 5, 5, NULL, NULL, 3, 0, 0, 0, 0, NULL, NULL, NULL, '安齋 美佐子', NULL, 'JP2004083974A | JP2014210967A | JP2015147955A', NULL, NULL, 1, '\\20220510\\371eb9024e8b4cda847311dbe0fb23dc.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 40035, 40037, 40036, 5);
INSERT INTO `os_patent` VALUES (23441, 'Gesinterter R-TM-B Magnet', '合成R-TM-B磁铁', 'DE112016001436T5', 'Ein gesinterter R-TM-B-Magnet enthält 24,5 bis 34,5 Masse% R, wobei R wenigstens eines ausgewählt aus Seltenerdelementen einschließlich Y ist; 0,85 bis 1,15 Masse% B; weniger als 0,1 Masse% Co; 0,07 bis 0,5 Masse% Ga; und 0 bis 0,4 Masse% Cu; mit dem Rest Fe und unvermeidliche Verunreinigungen; wobei die Gehalte (in Masse%) von Ga und Cu im Bereich eines Fünfecks liegen, das durch die Punkte A (0,5; 0,0), B (0,5; 0,4), C (0,07; 0,4), D (0,07; 0,1) und E (0,2; 0,0) in einer X-Y-Ebene definiert ist, wobei die X-Achse den Gehalt an Ga angibt, und die Y-Achse den Gehalt an Cu angibt.', '烧结的R-TM-B磁体含有24.5至34.5质量%R,其中R至少选自稀土元素,包括Y;0.85至1.15质量%b;小于0.1质量%的CO;0.07至0.5质量%GA;和0至0.4质量%Cu;剩下的Fe和不可避免的杂质;其中Ga和Cu的内容物(质量%)位于通过点(0.5; 0.0),b(0.5,0.0),c(0.07; 0.04),d(0.07; 0.1)的Pentagon的区域中并且在XY平面中限定E(0.2; 0.0),其中X轴表示Ga的含量,并且Y轴表示Cu的含量。', 'DE112016001436', 1458576000, 'DE112016001436T5', 1513785600, 1513785600, NULL, NULL, '德国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'T5', NULL, NULL, 14, 4, 0, 0, 0, NULL, NULL, NULL, '2015066185', 'JP', 1427385600, 13, 13, NULL, NULL, 4, 0, 0, 0, 0, NULL, '895', NULL, NULL, NULL, 'JP1988038555A | JP1989027208A | JP2003031409A | JP2013216965A', NULL, NULL, 1, '\\20220510\\d54e60f9edfe444a999ba5f2e404370f.png', NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 40038, 40040, 40039, 13);
INSERT INTO `os_patent` VALUES (23442, 'R-TM-B系焼結磁石', 'r-tm-b烧结磁铁', 'JP6658737B2', '24.5〜34.5質量%のR(RはYを含む希土類元素から選ばれる少なくとも1種)と、0.85〜1.15質量%のBと、0.1質量%未満のCoと、0.07〜0.5質量%のGaと、0〜0.4質量%のCuと、不可避不純物と、残部Feとを含有するR-TM-B系焼結磁石であって、前記Ga及びCuの含有量が、Ga量(質量%)及びCu量(質量%)をそれぞれX軸及びY軸としたXY平面上で、点A(0.5、0.0)、点B(0.5、0.4)、点C(0.07、0.4)、点D(0.07、0.1)及び点E(0.2、0.0)を頂点とする五角形で囲まれる領域内にあることを特徴とするR-TM-B系焼結磁石。', 'R为24.5〜34.5质量％（R为选自包括Y的稀土元素中的至少一种），B为0.85〜1.15质量％，Co小于0.1质量％，Ga为0.07〜0.5质量％，  0〜0.4质量％的Cu，不可避免的杂质以及剩余的含有R-TM-B系烧结磁铁的Fe，Ga和Cu的含量，Ga含量（质量％）和Cu含量 在X轴和Y轴的XY平面上的（质量％），分别是A点（0.5，0.0），B点（0.5，0.4），C点（0.07，0.4），D点（0.07，0.1）和 一种R-TM-B系统烧结磁体，该磁体位于被以点E（0.2，0.0）为顶点的五边形所包围的区域中。', 'JP2017509820', 1458576000, 'JP6658737B2', 1583251200, 1516204800, NULL, 1581264000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 4, 0, 0, 0, NULL, NULL, NULL, '2015066185', 'JP', 1427385600, 13, 13, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '秋山 直人', NULL, 'JP2007305878A | JP2009135393A | JP2014209546A | JP2016143828A | WO2009150843A1', NULL, NULL, 1, '\\20220510\\809a741be8ca4a3b92d5b84de935e139.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 40038, 40040, 40039, 13);
INSERT INTO `os_patent` VALUES (23443, '拡散処理装置およびそれを用いたR-T-B系焼結磁石の製造方法', '扩散处理装置和使用其制造RTB系烧结磁铁的方法', 'JP6512146B2', '【課題】従来よりも高い量産効率で拡散処理を行うことが可能な拡散処理方法を含む、R-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】処理容器10の処理空間内に、焼結磁石片と、重希土類元素を含む拡散源と、撹拌補助部材とを充填した状態で、処理容器10を加熱しながら回転させることによって、拡散源に含まれる重希土類元素を焼結磁石片に拡散させる工程を含み、処理空間の下側半分よりも小さく、処理空間の長さの80%以上の長さを有する投入容器110に、長さ方向の全体にわたって、焼結磁石片、拡散源および撹拌補助部材を均一に配置する工程と、塞いだ開口が下になるように処理容器10を水平面から10°超25°未満の角度に傾斜させ、他方の開口から、投入容器110を処理空間の下側半分に挿入する工程と、投入容器110を少なくとも180°回転させる工程と、投入容器110を処理空間から引き抜く工程とを包含する。\n\n【選択図】図9', '本发明的目的是提供一种制造基于R-T-B基烧结磁体的方法,包括能够执行高于现有技术的质量效率的扩散处理的扩散处理方法。\n\n在处理容器10的处理空间中,通过旋转处理容器10,同时用烧结磁体件加热处理容器10和包括重稀土元素和搅拌辅助构件的扩散源。含有的重稀土元素漫射源包括扩散烧结磁铁件的步骤,该步骤小于处理空间的下半部分,并且具有处理空间的长度的80%或更多的长度,以及输入容器110烧结磁体的长度块,扩散源和搅拌支撑构件均匀地布置在整个方向上,并且处理容器10从水平平面倾斜至10°低于10°以下10°的角度,使其被阻挡。来自另一个孔径,将输入容器110插入处理空间的下半部分的步骤以及旋转输入容器110至少180°的步骤,以及从处理空间中拉出输入容器110的步骤。\n\n图9.', 'JP2016061133', 1458835200, 'JP6512146B2', 1557849600, 1506528000, NULL, 1555603200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 27, 5, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 8, 0, 0, 0, 0, NULL, NULL, NULL, '田中 崇大', NULL, 'JP2002277166A | JP2012204696A | JP2014072259A | WO2007102391A1 | WO2008032668A1 | WO2011007758A1 | WO2013108830A1 | WO2017033861A1', NULL, NULL, 1, '\\20220510\\8ea4fcc987554c8f87827e0c4074d1b4.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 40041, 40043, 40042, 2);
INSERT INTO `os_patent` VALUES (23444, 'R-T-B系焼結磁石の製造方法', '制造RTB基烧结磁体的方法', 'JP6512150B2', '【課題】重希土類元素RHをR-T-B系焼結磁石素材の表面から内部に拡散させるR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】R-T-B系焼結磁石素材を準備する工程と、重希土類元素RHを20質量%以上80質量%以下含有する、大きさが90μm以下の合金粉末粒子を準備する工程と、それぞれの直径が0.5mm以上4mm以下の範囲にある撹拌補助部材を準備する工程とを含む。R-T-B系焼結磁石素材と、R-T-B系焼結磁石素材に対して重量比率で2%以上15%以下の合金粉末粒子と、R-T-B系焼結磁石素材に対して重量比率で100%以上500%以下の撹拌補助部材とを処理容器内に装入する工程と、処理容器を加熱すると共に回転および/または揺動させることにより、R-T-B系焼結磁石素材と合金粉末粒子と撹拌補助部材を連続的にまたは断続的に移動させてRH供給拡散処理を行う工程とを含む。\n\n【選択図】図2', '本发明的一个目的是提供一种制造R-T-B基烧结磁体的方法,其从基于R-T-B的烧结磁体材料的表面扩散重稀土元素RH。\n\n制备基于RTB的烧结磁体材料的步骤和制备尺寸为90μm或更小的合金粉末颗粒的步骤,其具有20质量%以上的重稀土元素RH和80质量%和每个直径每个含有在0.5mm或更大且4mm或更小的范围内制备搅拌辅助构件的步骤。合金粉末颗粒的重量比为2%或更高,15%以下,其重量比与RTB基烧结磁体材料的重量比和100%或更高且小于500%的重量比基于RTB的烧结磁体材料。将搅拌的支撑构件充电到加工容器中的步骤和处理容器以加热和旋转和/或岩石,因此连续地连续地基于RTB的烧结磁体材料和合金粉末颗粒和搅拌支撑会员或间歇性地移动和执行RH供应扩散处理。\n\n图2.', 'JP2016064190', 1459094400, 'JP6512150B2', 1557849600, 1507132800, NULL, 1555603200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 23, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 8, 0, 0, 0, 0, NULL, NULL, NULL, '田中 崇大', NULL, 'JP2012169436A | JP2012204696A | JP2014072259A | WO2006043348A1 | WO2007102391A1 | WO2011007758A1 | WO2012099186A1 | WO2017033861A1', NULL, NULL, 1, '\\20220510\\130978c5efd04fd58655278cc2062e2e.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, NULL, 40044, 40046, 40045, 2);
INSERT INTO `os_patent` VALUES (23445, 'R-T-B系焼結磁石', 'R-T-B系焼结磁石', 'JP6541038B2', '【課題】RHの含有量を低減しつつ、高いHcJと高いHk/HcJを有するR-T-B系焼結磁石の提供。\n\n【解決手段】R:32.0〜34.0質量%、B:0.88〜0.92質量%、Ga:0.60〜1.10質量%、Cu:0.20〜0.35質量%、Ti:0.05〜0.13質量%、Al:0.05〜0.50質量%、を含有し、残部T(TはFe又はFeとCo)及び不可避的不純物からなり、且つ、下記式(1)を満足する組成を有するR-T-B系焼結磁石。14.4≦[(Fewt/Feat)+(Cowt/Coat)+(Alwt/Alat)]/[(Bwt/Bat)-2×(Tiwt/Tiat)]≦15.4 (1)\n\n【選択図】図1', '要解决的问题：提供具有高H  cJ 和高H  k  / H  cJ 的RTB基烧结磁体提供。\n\n溶液：R：32.0至34.0质量％，B：0.88至0.92质量％，Ga：0.60至1.10质量％，Cu：0.20至0.35质量％，Ti：0.05至0.13质量％，Al：50重量％，含有余量T（T是Fe或者Fe和Co）由和不可避免的杂质，并且，具有组合物满足下式R-T-B系烧结磁铁（1）。14。4≦[（铁重量 / Fe的的）+（共重量 / Co的的）+（铝重量 / Al的的）] / [（B 重量 / B 的） -  2×（TI 重量 / Ti的的）]≦15.4', 'JP2016063822', 1459094400, 'JP6541038B2', 1562688000, 1507132800, NULL, 1561046400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '木下 直哉', NULL, 'JP2006210893A | WO2013008756A1 | WO2013191276A1 | WO2015020181A1 | WO2015020183A1', NULL, NULL, 1, '\\20220510\\41344ebca13440eb9139118d71c5d52b.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40047, 40049, 40048, 2);
INSERT INTO `os_patent` VALUES (23446, '軽希土類元素と重希土類元素を含む処理対象物から重希土類元素を溶出させる方法', '从含有轻稀土元素和重稀土元素的加工对象中洗脱重稀土元素的方法', 'JP6597447B2', '【課題】 溶媒抽出法の代替技術としての、軽希土類元素と重希土類元素を含む処理対象物から両者を分離するために有効な、軽希土類元素と重希土類元素を含む処理対象物から重希土類元素を溶出させる方法を提供すること。\n\n【解決手段】\n\n(1)軽希土類元素と重希土類元素を含む処理対象物から両者の複合酸化物ないし酸化物の混合物を得る工程\n\n(2)得られた軽希土類元素と重希土類元素の複合酸化物ないし酸化物の混合物を、アルミニウム源とともに焼成する工程\n\n(3)得られた焼成物を、濃度が0.1mol/L〜3.0mol/Lの塩酸および/または硝酸に添加する工程\n\n(4)重希土類元素を含む溶液を残渣から分離する工程\n\nを少なくとも含んでなることを特徴とする。\n\n【選択図】 図1', 'A作为一种替代技术，溶剂萃取法，有效将其从包括轻稀土元素和重稀土元素，从包括轻稀土元素和重稀土元素的处理对象的重稀土元素的处理对象分开要洗脱。一\n\n（1）从含有轻稀土元素和重稀土元素的待处理物体中获得复合氧化物或氧化物的混合物的步骤\n\n（2）将所得的轻稀土元素和重稀土元素的混合氧化物或氧化物混合物与铝源一起煅烧的步骤\n\n（3）将得到的煅烧产物浓缩至0.1mol / L至3的浓度。加入0mol / L盐酸和/或硝酸\n\n（4）从残渣中分离含有重稀土元素的溶液的步骤\n\n至少。\n\n发明背景', 'JP2016064775', 1459094400, 'JP6597447B2', 1572364800, 1507132800, NULL, 1570723200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '神田 和輝', NULL, 'CN102899488A | JP1990080530A | US20150292059A1 | WO2007119846A1 | WO2013018710A1 | WO2013085052A1 | WO2014057922A1', NULL, NULL, 1, '\\20220510\\ac7f29a0d4154e5fa252cea5fe8ed9d6.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 40050, 40052, 40051, 3);
INSERT INTO `os_patent` VALUES (23447, '焼結体の形状加工方法および加工装置', '烧结体的形状加工方法及加工装置', 'JP6634924B2', '【課題】従来よりも高い加工精度が得られ、かつ、量産性を低下させることのない、形状加工方法を提供する。\n\n【解決手段】焼結体の形状加工方法は、凸状の第1主面SO、第1主面の反対側の第2主面SI、および幅Wを規定する2つの第1側面SL1を有する焼結体を用意する工程aと、焼結体の長さ方向が搬送方向に平行で、第1主面SOまたは第2主面SIが上になるように焼結体を治具20に固定する工程bと、焼結体の幅Wを測定し、幅方向の中心位置を求める工程cと、中心位置が研削ホイール60の中心と一致するように研削ホイール60の位置を補正する工程dと、焼結体を搬送方向に搬送しながら、研削ホイール60によって焼結体を研削することによって、第1主面SOを凸状曲面に加工する、または、第2主面SIを凹状曲面または平坦な面に加工する工程eとを包含する。\n\n【選択図】図1', '要解决的问题：提供一种形状加工方法，其能够获得比现有技术更高的加工精度并且不会降低批量生产率。\n\n处理烧结体形状的方法具有凸起的第一主表面SO，与第一主表面相对的第二主表面S1，以及限定宽度W的两个第一侧表面SL1。一个步骤a制备的烧结体，烧结体的长度方向平行于输送方向，在固定烧结体中的夹具20，使得第一主表面SO或第二主表面S1是在顶部一步骤b的，测量的宽度W烧结体，并用于补偿所述步骤c，用于确定在所述宽度方向上的中心位置，砂轮的位置的步骤d 60，使得中心位置与砂轮60的中心一致，而输送所述烧结体在输送方向上，通过用砂轮60研磨烧结体中，以处理所述第一主表面SO凸出弯曲的，或者，一个第二主表面SI凹曲面或平以及对表面进行处理的步骤（e）。\n\n点域1', 'JP2016065099', 1459180800, 'JP6634924B2', 1579622400, 1507132800, NULL, 1577376000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 11, 0, 0, 0, 0, NULL, NULL, NULL, '山本 忠博', NULL, 'JP1987079958A | JP1989016252U | JP1993057593A | JP1994246631A | JP1998100049A | JP1999347900A | JP2002178246A | JP2003011041A | JP2005217227A | JP2006278919A | US7628677B1', NULL, NULL, 1, '\\20220510\\160ce6a60f4f4464a7c0baa6e9a251f2.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 40053, 40055, 40054, 2);
INSERT INTO `os_patent` VALUES (23448, '希土類-遷移金属系合金粉末の製造方法', '稀土 - 过渡金属基合金粉末的制备方法', 'JP2017203200A', '【課題】角形性が向上する希土類-遷移金属系合金粉末の製造方法を提供する\n\n【解決手段】原料の希土類-遷移金属系合金を粉砕し、レーザー回折式粒度分布測定による平均粒径は50μm以下で、且つ酸素含有量は0.1質量%以上10質量%以下である希土類-遷移金属系合金粉末を調製し、得られた合金粉末を、5体積%以上15体積%以下の酸素を含有する不活性ガスをキャリアガスとして用いて気流式分級を行うことを特徴とする希土類-遷移金属系合金粉末の製造方法。\n\n【選択図】なし', '甲矩形稀土改进 - 提供一种制造基于过渡金属的合金粉末的方法\n\n稀土的原料 - 过渡金属合金粉碎，平均粒径是通过激光衍射粒度分布测定50μm以下，是和氧含量0。1％（重量）（重量）或更小的10％是稀土 - 制备过渡金属合金粉末，通过使用含有较少的氧15％（体积）5体积％以上的作为载体气体的惰性气体而得到的合金粉末稀土和执行空气分级 - 过渡金属合金粉末制造方法。', 'JP2016096856', 1463068800, 'JP2017203200A', 1510761600, 1510761600, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 2, 2, 2, 2, 0, NULL, NULL, NULL, NULL, NULL, 'JP1993308012A | JP1997097732A', 'JP2021077882A | JP7004787B2', NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 40056, 40058, 40057, 1);
INSERT INTO `os_patent` VALUES (23449, '磁石合金粉の製造方法', '磁铁合金粉末的制造方法', 'JP6556095B2', '【課題】ボンド磁石の製造工程あるいはボンド磁石としての使用時に高温に加熱されたとしても、加熱後の室温での保磁力の低下を抑制した磁石合金粉の製造方法を提供する。\n\n【解決手段】本発明に係る磁石合金粉の製造方法は、希土類元素を含む鉄系磁石合金粉を、リン酸を含む有機溶媒中で粉砕して磁石合金粉を製造する方法であって、鉄系磁石合金粉を粉砕するに際して、リン酸を含む有機溶媒のpHを1.5以上8.0以下とし、有機溶媒中のリン酸濃度を0.1体積%以上20体積%以下とし、かつ、リンアルコキシドを有機溶媒中の濃度として0.001mol/L以上10mol/L以下で添加する。\n\n【選択図】なし', '要解决的问题：提供一种制造磁体合金粉末的方法，其中即使在粘结磁体的制造过程中将其加热到高温或者用作粘结磁体，也可以抑制加热后室温下矫顽力的降低。\n\n本发明的磁铁合金粉末的制造方法是在含有磷酸的有机溶剂中粉碎含有稀土元素的铁基磁性合金粉末制造磁铁合金粉末的方法，在粉碎系统磁铁合金粉末时，将含磷酸的有机溶剂的pH调节至1.5以上且8.0以下，将有机溶剂中的磷酸浓度设定为0.1体积％以上且20体积％以下，并将磷醇盐混合在有机溶剂中。浓度为0.001mol / L以上且10mol / L以下。\n\n【选择图】无', 'JP2016105410', 1464192000, 'JP6556095B2', 1565107200, 1511971200, NULL, 1563465600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 6, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 8, 0, 0, 0, 0, NULL, NULL, NULL, '池田 安希子', NULL, 'JP1990046703A | JP1998208920A | JP2000208321A | JP2002093611A | JP2002124406A | JP2004266151A | JP2005039218A | JP2005191426A', NULL, NULL, 1, '\\20220510\\f0689404d17b49dc8bcaf59d74c7475e.png', NULL, NULL, 2, NULL, NULL, 10, NULL, NULL, NULL, 40059, 40061, 40060, 2);
INSERT INTO `os_patent` VALUES (23450, '磁石合金粉の製造方法', '磁铁合金粉末的制造方法', 'JP6572171B2', '【課題】ボンド磁石の製造工程あるいはボンド磁石としての使用時に高温に加熱されたとしても、加熱後の室温での保磁力の低下を抑制した磁石合金粉の製造方法を提供する。\n\n【解決手段】本発明に係る磁石合金粉の製造方法は、希土類元素を含む鉄系磁石合金粉を、リン酸を含む有機溶媒中で粉砕して磁石合金粉を製造する方法であって、鉄系磁石合金粉を粉砕するに際して、リン酸を含む有機溶媒のpHを1.5以上8.0以下とし、有機溶媒中のリン酸濃度を0.1体積%以上20体積%以下とし、かつ、酸化剤を有機溶媒中の濃度として0.0001mol/L以上1.0mol/L以下で添加する。\n\n【選択図】なし', '要解决的问题：提供一种制造磁体合金粉末的方法，其中即使在粘结磁体的制造过程中将其加热到高温或者用作粘结磁体，也可以抑制加热后室温下矫顽力的降低。\n\n本发明的磁铁合金粉末的制造方法是在含有磷酸的有机溶剂中粉碎含有稀土元素的铁基磁性合金粉末制造磁铁合金粉末的方法，在粉碎系统磁铁合金粉末时，将含磷酸的有机溶剂的pH调节至1.5以上且8.0以下，将有机溶剂中的磷酸浓度设定为0.1体积％以上且20体积％以下，并将氧化剂添加至有机溶剂中。就浓度为0.0001mol / L以上且1.0mol / L以下而言。\n\n【选择图】无', 'JP2016105409', 1464192000, 'JP6572171B2', 1567526400, 1511971200, NULL, 1565884800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 6, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 8, 0, 0, 0, 0, NULL, NULL, NULL, '米田 健志', NULL, 'JP1969025444Y1 | JP2000208321A | JP2002124406A | JP2002198241A | JP2003148528A | JP2003217916A | JP2011146417A | US20020066499A1', NULL, NULL, 1, '\\20220510\\d8466d4089b9498a903bf4861ce8c317.png', NULL, NULL, 2, NULL, NULL, 6, NULL, NULL, NULL, 40062, 40064, 40063, 2);
INSERT INTO `os_patent` VALUES (23451, '磁石合金粉の製造方法', '磁铁合金粉末的制造方法', 'JP6716339B2', '【課題】ボンド磁石の製造工程あるいはボンド磁石としての使用時に高温に加熱されたとしても、加熱後の室温での保磁力の低下を抑制した磁石合金粉の製造方法を提供する。\n\n【解決手段】本発明に係る磁石合金粉の製造方法は、希土類元素を含む鉄系磁石合金粉を、リン酸を含む有機溶媒中で粉砕して磁石合金粉を製造する方法であって、鉄系磁石合金粉を粉砕するに際して、リン酸を含む有機溶媒のpHを1.5以上8.0以下とし、有機溶媒中のリン酸濃度を0.1体積%以上20体積%以下とし、かつ、チタン、バナジウム、クロム、マンガン、アルミニウム、シリコン、銅、亜鉛、及びモリブデンからなる群から選ばれる元素を含む化合物のうちの1種以上を有機溶媒中の濃度として0.001mol/L以上10mol/L以下で添加する。\n\n【選択図】なし', '本发明提供一种磁铁合金粉末的制造方法，该磁铁合金粉末即使在粘结磁铁的制造工序中被加热至高温，或者作为粘结磁铁使用，也能够抑制加热后室温下的矫顽力降低。\n\n本发明的磁铁合金粉末的制造方法是在含有磷酸的有机溶剂中将含有稀土元素的铁基磁性合金粉末粉碎而制造磁铁合金粉末的方法，在研磨系统磁体合金粉末时，含有磷酸的有机溶剂的pH设定为1.5以上且8.0以下，有机溶剂中的磷酸浓度设定为0。和1体积％〜20体积％，钛，钒，铬，锰，铝，硅，铜，锌，和从由钼组成的组中的有机溶剂的一种或多种含有元素的化合物的浓度为0.001mol / L以上且10mol / L以下。', 'JP2016105411', 1464192000, 'JP6716339B2', 1593532800, 1511971200, NULL, 1591891200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 6, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, '池田 安希子', NULL, 'JP2000208321A | JP2002124406A | JP2005191426A | JP2008072130A', NULL, NULL, 1, '\\20220510\\86ea5f04e22e41fabbe51336ea6e10c8.png', NULL, NULL, 2, NULL, NULL, 8, NULL, NULL, NULL, 40065, 40067, 40066, 2);
INSERT INTO `os_patent` VALUES (23452, 'Powder-filling system', '粉剂灌装系统', 'US9449758B1', 'A powder-filling system capable of filling a container with powder at an approximately uniform filling density has: a hopper having an opening removably and hermetically closably attached to the container, the hopper communicating with the container at the opening for supplying powder to a container; a powder supplier for supplying powder to the hopper; a gas supplier for repeatedly supplying compressed gas in a pulsed form to the hopper, with the hopper hermetically closably attached to the container; and a sieve member provided at the opening and having a smaller openings in a region near a side wall of the hopper than in its central region. The smaller openings in the region near the side wall of the hopper where the powder more easily falls from the hopper into the container impedes the fall of the powder in that region and improves the overall uniformity in the filling density.', '一种能够以大致均匀的填充密度填充容器的粉末填充系统具有：料斗，其具有可拆卸地且可气密地可关闭地连接到容器上的开口，料斗在开口处与容器连通以向容器供应粉末;粉末供应器，用于向料斗供应粉末;气体供应器，用于以脉冲形式将压缩气体反复供应到料斗，料斗密封地可闭合地连接到容器上;筛网构件设置在开口处，并且在料斗侧壁附近的区域中具有比在其中心区域中更小的开口。在料斗侧壁附近区域中较小的开口，粉末更容易从料斗落入容器中，阻碍了粉末在该区域的下落，并改善了填充密度的整体均匀性。', 'US15/168555', 1464624000, 'US9449758B1', 1474300800, 1474300800, NULL, 1474300800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 16, 3, 0, 0, 0, NULL, NULL, NULL, '2013019891 | PCT/JP2014/052411', 'JP | WO', 1359907200, 20, 20, NULL, NULL, 25, 0, 0, 0, 6, NULL, '880', NULL, 'DAVIS, ROBERT B', NULL, 'CN102893348A | EP0900645A2 | EP0988959A2 | EP2571035A1 | JP1999049101A | JP1999090694A | JP2000328102A | JP2007501171A | JP2008012741A | JP2010510069A | JP3978262B2 | US20070102058A1 | US20100043916A1 | US20120176212A1 | US20130052290A1 | US6155028A | US6475430B1 | US6656416B2 | US7866312B2 | WO2005014397A1 | WO2008060229A1 | WO2011142321A1', NULL, 'Apr. 28, 2014 Written Opinion issued in International Application No. PCT/JP2014/052411. cited by applicant | Jan. 29, 2016 Extended European Search Report issued in European Application No. 14745964.8. cited by applicant | Mar. 1, 2016 Notice of Allowance issued in U.S. Appl. No. 14/765,130. | Mar. 1, 2016 Notice of Allowance issued in U.S. Appl. No. 14/765,130. cited by applicant | Mar. 22, 2016 Corrected Notice of Allowability issued in U.S. Appl. No. 14/765,130. | Mar. 22, 2016 Corrected Notice of Allowability issued in U.S. Appl. No. 14/765,130. cited by applicant.', 1, '\\20220510\\24036eba9b954e7b9a4a8be1ee348170.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39821, 39823, 39822, 22);
INSERT INTO `os_patent` VALUES (23453, 'R-T-B系焼結磁石およびその製造方法', 'R-T-B系烧结磁铁及其制造方法', 'JP6090550B1', 'R:27.5〜34.0質量%、RH:2〜10質量%、B:0.89〜0.95質量%、Ti:0.1〜0.2質量%、Ga:0.3〜0.7質量%、Cu:0.07〜0.50質量%、Al:0.05〜0.50質量%、M(MはNb及び/又はZr):0〜0.3質量%、残部T、および不可避的不純物を含有し、下記式(1)、(2)及び(3)を満足することを特徴とするR-T-B系焼結磁石。 [T]-72.3([B]-0.45[Ti])>0 (1) ([T]-72.3([B]-0.45[Ti]))/55.85<13[Ga]/69.72 (2) [Ga]≧[Cu] (3)', 'R:27.5至34.0重量%,RH:2至10重量%,B:0.89至0.95重量%,Ti:0.1至0.2重量%,Ga:0.3至0.7重量%,Cu:0.07至0.50重量%,Al:0.05至0.50重量%,m(m是Nb和/或Zr):0至0.3质量%,剩余的T和不可避免的杂质,以及下式(1),(2)和(3)满足基于RTB的烧结磁体[T] -72.3([b] -0.45 [Ti])> 0(1)([T] -72.3([B] -0.45 [Ti])/ 55.85 <13 [Ga] / 69.72(2)[ ga]≧[cu](3)', 'JP2016564656', 1466092800, 'JP6090550B1', 1488902400, 1488902400, NULL, 1487260800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 17, 5, 0, 0, 0, NULL, NULL, NULL, '2015127295', 'JP', 1435161600, 8, 8, NULL, NULL, 6, 4, 4, 4, 0, NULL, NULL, NULL, '池田 安希子', NULL, 'JP2008264875A | WO2009122709A1 | WO2010113371A1 | WO2013008756A1 | WO2013054854A1 | WO2015020181A1', 'CN110431646A | CN110431646B | JP6432718B1 | WO2018180891A1', NULL, 1, '\\20220510\\3ff1ba442e0a4fad9f7272801c849868.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 40068, 40070, 40069, 8);
INSERT INTO `os_patent` VALUES (23454, 'R-T-B basierter Sintermagnet und Verfahren zu seiner Herstellung', 'R-T-B基烧结磁体及其制备方法', 'DE112016002876T5', 'Ein R-T-B-basierter Sintermagnet mit R: 27,5 bis 34,0 Masse%, RH: 2 bis 10 Masse%, B: 0,89 bis 0,95 Masse%, Ti: 0,1 bis 0,2 Masse%, Ga: 0,3 bis 0,7 Masse%, Cu: 0,07 bis 0,50 Masse%, Al: 0,05 bis 0,50 Masse%, M (M ist Nb und/oder Zr): 0 bis 0,3 Masse%, Rest T und unvermeidliche Verunreinigungen wird bereitgestellt, wobei die folgenden Ungleichungen (1), (2), und (3) erfüllt sind: \n\n[T] – 72,3([B] – 0,45[Ti]) > 0		(1)\n\n([T] – 72,3([B] – 0,45[Ti]))/55,85 < 13[Ga]/69,72		(2)\n\n[Ga] ≥ [Cu]		(3)', 'R:27.5〜34.0质量%,RH:2〜10质量%,B:0.89〜0.95质量%,Ti:0.1〜0.2质量%的RTB系烧结磁铁。  Ga:0.3〜0.7质量%,Cu:0.07〜0.50质量%,Al:0.05〜0.50质量%,M(M为Nb和/或Zr):0〜0  ,提供3质量%,剩余T和不可避免的杂质,满足以下不等式(1),(2)和(3):\n\n [T]-72.3([B]-0.45 [Ti])> 0(1)\n\n ([T]-72.3([B]-0.45 [Ti]))/ 55.85 <13 [Ga] / 69.72(2)\n\n [Ga]≥[Cu](3)', 'DE112016002876', 1466092800, 'DE112016002876T5', 1520438400, 1520438400, NULL, NULL, '德国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'T5', NULL, NULL, 18, 5, 0, 0, 0, NULL, NULL, NULL, '2015127295', 'JP', 1435161600, 8, 8, NULL, NULL, 3, 2, 2, 2, 0, NULL, '895', NULL, NULL, NULL, 'JP2007119882A | JP2015127295A | WO2013008756A1', 'EP3745430A4 | EP3745430B1', NULL, 1, '\\20220510\\0244f7927226457e911a90055a6792ba.png', NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 40068, 40070, 40069, 8);
INSERT INTO `os_patent` VALUES (23455, 'R-T-B-based sintered magnet and method for producing same', 'R-T-B系烧结磁铁及其制造方法', 'US10923256B2', 'To provide an R-T-B based sintered magnet including R: 27.5 to 34.0% by mass, RH: 2 to 10% by mass, B: 0.89 to 0.95% by mass, Ti: 0.1 to 0.2% by mass, Ga: 0.3 to 0.7% by mass, Cu: 0.07 to 0.50% by mass, Al: 0.05 to 0.50% by mass, M (M is Nb and/or Zr): 0 to 0.3% by mass, balance T, and inevitable impurities, the following inequality expressions (1), (2), and (3) being satisfied:\n\n[T]−72.3([B]−0.45[Ti])>0  (1)\n\n([T]−72.3([B]−0.45[Ti]))/55.85&#x3c;13[Ga]/69.72  (2)\n\n[Ga]≥[Cu]  (3).', '为了提供RTB系烧结磁铁,其中,R:27.5〜34.0质量%,RH:2〜10质量%,B:0.89〜0.95质量%,Ti:0.1〜0.2质量%,Ga:0.3〜0.7%。 质量:Cu:0.07〜0.50质量%,Al:0.05〜0.50质量%,M(M为Nb和/或Zr):0〜0.3质量%,余量T,不可避免的杂质,以下不等式表示。 (1),(2)和(3)满足: \n\n [T] −72.3([B] −0.45 [Ti])> 0(1) \n\n ([T] −72.3([B] −0.45 [Ti]))/ 55.85 <13 [Ga] /69.72(2) \n\n [Ga]≥[Cu](3)。', 'US15/739261', 1466092800, 'US10923256B2', 1613404800, 1530115200, NULL, 1613404800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 5, 0, 0, 0, NULL, NULL, NULL, '2015127295', 'JP', 1435161600, 8, 8, NULL, NULL, 15, 0, 0, 0, 2, NULL, '870', NULL, 'SU, XIAOWEI', NULL, 'JP2008264875A | US20110025440A1 | US20120091844A1 | US20140132377A1 | US20140247100A1 | US20140286815A1 | US20140286816A1 | US20140308152A1 | US20160163434A1 | US20170025207A1 | WO2009122709A1 | WO2010113371A1 | WO2013008756A1 | WO2013054854A1 | WO2015020181A1', NULL, 'International Preliminary Report on Patentability and Translation of Written Opinion, dated Dec. 26, 2017 from the International Bureau in counterpart International application No. PCT/JP2016/068115. | International Search Report of PCT/JP2016/068115 dated Sep. 6, 2016 [PCT/ISA/210].', 1, '\\20220510\\faaa64e2a01049c5b0cd5a5424618e28.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 40068, 40070, 40069, 8);
INSERT INTO `os_patent` VALUES (23456, 'NdFeB system sintered magnet', '钕铁硼系烧结磁铁', 'US10290408B2', 'A NdFeB system sintered magnet produced by the grain boundary diffusion method and has a high coercive force and squareness ratio with only a small decrease in the maximum energy product. A NdFeB system sintered magnet having a base material produced by orienting powder of a NdFeB system alloy and sintering the powder, with Dy and/or Tb (the “Dy and/or Tb” is hereinafter called RH) attached to and diffused from a surface of the base material through the grain boundary inside the base material by a grain boundary diffusion treatment, wherein the difference Cgx−Cx between the RH content Cgx (wt %) in the grain boundary and the RH content Cx (wt %) in main-phase grains which are grains constituting the base material at the same depth within a range from the surface to which RH is attached to a depth of 3 mm is equal to or larger than 3 wt %.', '一种NdFeB系烧结磁体，采用晶界扩散法制造，矫顽力和矩形比高，最大能量积减少很少。一种NdFeB系烧结磁体，其具有通过使NdFeB系合金的粉末取向并烧结该粉末而制备的基材，其中Dy和/或Tb（“Dy和/或Tb”在下文中称为RH）附着并扩散通过晶界扩散处理从基材表面到基材内部的晶界，其中CGX-CX之间的差值为RH含量CGX（wt％）in晶粒边界和主相晶粒中的RH含量CX（wt％）是在与RH连接的表面相同的深度内构成基材的晶粒。 3mm的深度等于或大于3wt％。', 'US15/189801', 1466524800, 'US10290408B2', 1557763200, 1476288000, NULL, 1557763200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 20, 2, 0, 0, 0, NULL, NULL, NULL, '2011286864 | 2012026720 | PCT/JP2012/083789', 'JP | JP | WO', 1324915200, 14, 54, NULL, NULL, 55, 0, 0, 0, 27, NULL, '880', NULL, 'KASTLER, SCOTT R', 'LUK, VANESSA T.', 'CN101276665A | CN101276666A | CN101375352A | CN101652821A | CN101770843A | CN101911227A | CN102087917A | CN102308342A | CN102483979A | CN1114779A | CN1698142A | CN1898757A | CN1983471A | EP1793392A2 | EP1923893A1 | EP1981043A1 | EP2169689A1 | EP2239747A1 | EP2453448A1 | JP1973031074A | JP2003297622A | JP2004256877A | JP2008266767A | JP2008270699A | JP2008305908A | JP2011223007A | JP2012136778A | JP4831074B2 | KR1020100027111A | US20070151632A1 | US20080241368A1 | US20080241513A1 | US20080286595A1 | US20100182113A1 | US20100231338A1 | US20100282371A1 | US20110260816A1 | US20120025651A1 | US20120111232A1 | US20120176211A1 | US20120206227A1 | US20130135069A1 | US20140062632A1 | US7618497B2 | US9412505B2 | WO2006043348A1 | WO2007088718A1 | WO2009004794A1 | WO2010009760A1 | WO2010109760A1 | WO2011004894A1 | WO2011125591A1 | WO2013100010A1', NULL, 'Apr. 16, 2013 International Search Report issued in International Patent Application No. PCT/JP2012/083786. | Apr. 16, 2013 Written Opinion of the International Searching Authority issued in International Patent Application No. PCT/JP2012/083786. cited by applicant | Aug. 3, 2018 Decision of Rejection issued in Chinese Patent Application No. 201510685013.1. cited by applicant | F. Vial et al., \"Improvement of coercivity of sintered NdFeB permanent magnets by heat treatment,\" Journal of Magnetism and Magnetic Materials 242-245, pp. 1329-1334, (2002). cited by applicant | J.M.D. Coey, \"Rare-earth Iron Permanent Magnets,\" Clarendon press, Oxford, pp. 348-353, (1996): 2.2.2 Hydrogen decrepitation (HD). cited by applicant | Jan. 22, 2016 Office Action issued in U.S. Appl. No. 14/114,657. | Jan. 22, 2016 Office Action issued in U.S. Appl. No. 14/114,657. cited by applicant | Jan. 29, 2019 Notification of Contested Trial issued in Chinese Patent Application No. 201510685013.1. cited by applicant. | Jan. 31, 2018 Office Action issued in Chinese Patent Application No. 201510685013.1. | Jan. 5, 2015 Office Action issued in Chinese Patent Application No. 201280021367.0. | Jan. 5, 2015 Office Action issued in U.S. Appl. No. 14/114,656. | Jan. 5, 2015 Office Action issued in U.S. Appl. No. 14/114,656. cited by applicant | Jul. 10, 2018 Office Action issued in European Patent Application No. 12 863 911.9. cited by applicant | Jul. 7, 2016 Office Action issued in European Patent Application No. 12 863 318.7. | Jul. 8, 2014 Office Action issued in Chinese Patent Application No. 201280021386.3. | Jul. 9, 2015 Extended European Search Report issued in European Patent Application No. 12863318.7. cited by applicant | Li, W.F. et al., \"Distribution of Dy in High-Coercivity (Nd,Dy)--Fe--B Sintered Magnet,\" Acta Materialia, Mar. 2011, pp. 3061-3069, vol. 59. cited by applicant | Mar. 29, 2016 Office Action issued in European Patent Application No. 12863295.7. cited by applicant | May 14, 2015 Office Action issued in U.S. Appl. No. 14/114,656. | May 19, 2016 Office Action issued in U.S. Appl. No. 14/114,657. cited by applicant | Oct. 28, 2015 Office Action issued in Chinese Patent Application No. 201280021381.0. cited by applicant | Sep. 14, 2015 Office Action issued in Chinese Patent Application No. 201280021354.3. cited by applicant | Sep. 17, 2014 Office Action issued in Korean Patent Application No. 10-2013-7023816. cited by applicant | Sep. 24, 2013 Office Action issued in Japanese Patent Application No. 2013-536354. cited by applicant | Sepehri-Amin, H. et al., \"Grain Boundary Structure and Chemistry of Dy-Diffusion Processed; Nd--Fe--B Sintered Magnets,\" Journal of Applied Physics, May 2010, pp. 09A745.1-09A745.3, vol. 107. cited by applicant | U.S. Appl. No. 14/114,656, filed Oct. 29, 2013 in the name of Sagawa et al. | U.S. Appl. No. 14/114,657, filed Oct. 29, 2013 in the name of Sagawa et al. cited by applicant', 1, '\\20220510\\de6469da84fe49829f2dc921de0c1795.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 39716, 39713, 39712, 58);
INSERT INTO `os_patent` VALUES (23457, '希土類元素とアルミニウムの複合酸化物からアルミニウムを分離する方法', '从稀土元素与铝的复合氧化物中分离铝的方法', 'JP2018003090A', '【課題】 希土類元素とアルミニウムの複合酸化物からアルミニウムを分離する方法を提供すること。\n\n【解決手段】\n\n(1)希土類元素とアルミニウムの複合酸化物をホウ素源と溶融する工程\n\n(2)得られた溶融物を塩酸および/または硝酸に溶解する工程\n\n(3)得られた溶液に沈殿剤を加えて希土類元素の沈殿物を得る工程\n\n(4)得られた希土類元素の沈殿物を溶液から分離する工程\n\nを少なくとも含んでなることを特徴とする。\n\n【選択図】 図2', '要解决的问题：提供一种从稀土元素和铝的复合氧化物中分离铝的方法。\n\n一\n\n（1）用硼源熔化稀土元素和铝的复合氧化物的步骤\n\n（2）将所得熔体溶解在盐酸和/或硝酸中的步骤\n\n（3）向所得溶液中加入沉淀剂以获得稀土元素沉淀的步骤\n\n（4）从溶液中分离所得稀土元素的沉淀物的步骤\n\n至少。\n\n发明背景', 'JP2016131169', 1467216000, 'JP2018003090A', 1515600000, 1515600000, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'WO2013018710A1', NULL, NULL, 1, '\\20220510\\a2fc25af519949deb083a6fab29b5d14.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40071, 40073, 40072, 1);
INSERT INTO `os_patent` VALUES (23458, '軽希土類元素と重希土類元素を含む処理対象物から両者を分離する方法', '从含有轻稀土元素和重稀土元素的被处理物中分离的方法', 'JP6786910B2', 'PROBLEM TO BE SOLVED: To provide a method for separating both of light rare earth elements and heavy rare earth elements from a processing object containing them as an alternative technique of a solvent extraction method.SOLUTION: A calcium reduction reaction is conducted on a mixture of composite oxide or oxide of light rare earth elements and heavy rare earth elements obtained from a processing object containing the light rare earth elements and the heavy rare earth elements in the presence of a getter metal, a light rare earth metal reduced by the calcium reduction reaction is alloyed with the getter metal and recovered.SELECTED DRAWING: None', '要解决的问题:提供一种从包含它们作为溶剂萃取方法的替代技术的处理对象分离光稀土元素和重物稀土元素的方法。溶液:在混合物中进行钙还原反应 光稀土元素的复合氧化物或氧化物和从含有轻质稀土元素的加工物体获得的重稀土元素在吸气金属存在下,通过钙的稀土金属减少了轻质稀土金属 与吸气剂金属合金化,恢复。选择绘图:无', 'JP2016131168', 1467216000, 'JP6786910B2', 1605628800, 1515600000, NULL, 1604246400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 9, 0, 0, 0, 0, NULL, NULL, NULL, '祢屋 健太郎', NULL, 'JP1990080530A | JP1992191342A | JP1993078715A | JP1999329811A | JP2003013116A | JP2004091811A | JP2005057191A | JP2016041839A | WO2013018710A1', NULL, NULL, 1, '\\20220510\\aa21289c3f504308937a61d9ac1e8212.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 40074, 40076, 40075, 2);
INSERT INTO `os_patent` VALUES (23459, '希土類系焼結磁石の製造方法', '稀土烧结磁体的制造方法', 'JP6604381B2', '金属粉末22および金属化合物粉末24が混合された混合粉末と樹脂バインダ20とを含むペーストの塗布膜200をR-T-B系焼結磁石100の表面に形成する。次に、熱処理を行うことによって塗布膜200中の金属成分を焼結磁石100の内部に拡散させる。塗布膜200は、熱処理工程後にも残存する炭素を含有し、かつ、残存する炭素の含有量から、ペーストに含まれていた混合粉末の熱処理前における炭素含有量を差し引いた値が、熱処理後における塗布膜200の全体の0.07質量%以上0.50質量%以下の範囲になるように、熱処理前における塗布膜200の炭素含有量が調整されている。', '在基于R-T-B基烧结磁体100的表面上形成含有混合粉末和与金属化合物粉末24混合的糊状物的涂膜200和与金属化合物粉末24混合的树脂粘合剂20。接下来,通过热处理通过热处理在烧结磁体100内部扩散涂膜200中的金属部件。涂膜200含有剩余的碳含量留在热处理步骤之后,并且通过在热处理浆料中含有含量的混合粉末的混合粉末中的热处理之前减去碳含量而获得的值。碳在热处理之前涂膜200的含量调节,以便在0.07质量%以上和0.50质量%或更少的整个涂膜200的范围内。', 'JP2017530789', 1468512000, 'JP6604381B2', 1573574400, 1526486400, NULL, 1571932800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 18, 1, 0, 0, 0, NULL, NULL, NULL, '2015149505', 'JP', 1438099200, 5, 5, NULL, NULL, 10, 0, 0, 0, 1, NULL, NULL, NULL, '鈴木 孝章', NULL, 'JP2005187929A | JP2008263179A | JP2009302119A | JP2010114200A | JP2011014668A | JP2012234971A | JP2012248827A | JP2012248828A | JP2016178289A | WO2006043348A1', NULL, 'LEE, S.H., et al.,\"Effects of binder and thermal debinding parameters on residual carbon in injection moulding of Nd(Fe,Co)B powder\",Powder Metallurgy,英国,The Institute of Materials, Minerals and Mining,1999年,Vol.42 No.1,pp.41-44', 1, '\\20220510\\aeb53ef9273849ffbb7f53d724f1235b.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 40077, 40079, 40078, 5);
INSERT INTO `os_patent` VALUES (23460, 'R-T-B系焼結磁石の製造方法', 'R-T-B基烧结磁体的制备方法', 'JP6380652B2', 'R-T-B系焼結磁石素材およびPr-Ga合金を準備する。焼結磁石素材は、R:27.5〜35.0質量%(Rは希土類元素うちの少なくとも一種であり、Ndを必ず含む)、B:0.80〜0.99質量%、Ga:0〜0.8質量%、M:0〜2質量%(MはCu、Al、Nb、Zrの少なくとも一種)、残部T(Tは遷移金属元素の少なくとも一種でありFeを必ず含み、Feの10%以下をCoで置換できる)、及び不可避的不純物を含有する。Tの含有量(質量%)を[T]、Bの含有量(質量%)を[B]とするとき、[T]/55.85>14[B]/10.8を満足する。焼結磁石素材表面の少なくとも一部にPr-Ga合金の少なくとも一部を接触させ、600℃超950℃以下の温度で第一の熱処理を実施する。第一の熱処理の温度よりも低い温度で且つ、450℃以上750℃以下の温度で第二の熱処理を実施する。', '制备R  -  T  -  B基烧结磁体材料和Pr  -  Ga合金。 B：0.80~0.99质量％，Ga：0~0.8质量％，M：0（质量％），R：27.5~35.0质量％（R是稀土元素中的至少一种，必须含有Nd） （Cu，Al，Nb和Zr中的至少一种）余量T（T是至少一种过渡金属元素并且必须含有Fe和Co可以被10％或更少的Fe取代），和它含有不可避免的杂质。当T的含量（质量％）为[T]且B的含量（质量％）为[B]时，满足[T] /55.85> 14 [B] /10.8。使烧结磁体材料的至少一部分表面与Pr-Ga合金的至少一部分接触，并且在高于600℃和950℃或更低的温度下进行第一热处理。在低于第一热处理温度的温度和450℃至750℃（包括450℃和750℃）的温度下进行第二热处理。', 'JP2017509070', 1468944000, 'JP6380652B2', 1535472000, 1501084800, NULL, 1533830400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 19, 1, 0, 0, 0, NULL, NULL, NULL, '2015150585 | 2016026583', 'JP | JP', 1438185600, 10, 10, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '馬場 慎', NULL, 'JP2012094813A | JP2014086529A | WO2012036294A1 | WO2013008756A1 | WO2016133071A1', NULL, NULL, 1, '\\20220510\\a1baa7539dbb4d0daf2fa97576d50bea.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40080, 40082, 40081, 11);
INSERT INTO `os_patent` VALUES (23461, 'Method for producing r-t-b system sintered magnet', 'r-t-b系烧结磁铁的制造方法', 'EP3330984B1', 'A sintered R-T-B based magnet work and a Pr-Ga alloy are provided. The sintered magnet work contains R: 27.5 to 35.0 mass% (where R is at least one rare-earth element which always includes Nd), B: 0.80 to 0.99 mass%, Ga: 0 to 0.8 mass%, M: 0 to 2 mass% (where M is at least one of Cu, Al, Nb and Zr), a balance T (where T is at least one transition metal element which always includes Fe, such that 10% or less of Fe is replaceable by Co), and inevitable impurities. [T]/55.85 > 14[B]/10.8 is satisfied where [T] is the T content (mass%) and [B] is the B content (mass%). At least a portion of the Pr-Ga alloy is allowed to be in contact with at least a portion of the sintered magnet work surface, and a first heat treatment is performed at a temperature which is greater than 600°C but equal to or less than 950°C. A second heat treatment is performed at a temperature which is lower than the temperature of the first heat treatment but which is not less than 450°C and not more than 750°C.', '提供烧结的R-T-B基磁体和Pr-Ga合金。烧结磁体含有R：27.5~35.0质量％（R为至少一种总是含有Nd的稀土元素），B：0.80~0.99质量％，Ga：0~0.8质量％，M：0~2质量％（其中M是Cu，Al，Nb和Zr中的至少一种），余量T（其中T是至少一种总是包含Fe的过渡金属元素，使得10％或更少的Fe可被Co替代） ，和不可避免的杂质。满足[T] /55.85> 14 [B] /10.8，其中[T]是T含量（质量％），[B]是B含量（质量％）。允许至少一部分Pr-Ga合金与烧结磁体工作表面的至少一部分接触，并且在大于600℃但等于或小于等于或小于600℃的温度下进行第一热处理。比950°C。第二热处理在低于第一热处理温度但不低于450℃且不高于750℃的温度下进行。', 'EP2016830396', 1468944000, 'EP3330984B1', 1584460800, 1528214400, NULL, 1584460800, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 23, 1, 0, 0, 0, NULL, NULL, NULL, '2015150585 | 2016026583', 'JP | JP', 1438185600, 10, 10, NULL, NULL, 5, 0, 0, 0, 0, NULL, '894', NULL, NULL, NULL, 'JP1997129424A | JP2012094813A | JP2014086529A | US20130008756A1 | WO2014086529A1', NULL, NULL, 1, '\\20220510\\aa43ccae8dbc4fc6bc9b778f4f377167.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, '有效:DE,FR,GB | 失效:RS,NO,FI,BE,PT,BG,DK,LT,LU,LV,HR,SE,SI,MC,SK,SM,IE,EE,CH,IS,IT,GR,ES,AT,CZ,PL,RO,LI,NL | 未确认:HU,MK,MT,AL,CY,TR', 40080, 40082, 40081, 11);
INSERT INTO `os_patent` VALUES (23462, 'VERFAHREN ZUR HERSTELLUNG EINES GESINTERTEN R-T-B-MAGNETEN', '制造烧结R-T-B磁体的方法', 'DE602016032241T2', 'An R-T-B system sintered magnet material and a Pr-Ga alloy are prepared. The sintered magnet material contains 27.5-35.0 mass% of R (R is composed of at least one rare earth element essentially including Nd), 0.80-0.99 mass% of B, 0-0.8 mass% of Ga, and 0-2 mass% of M (M is composed of at least one of Cu, Al, Nb and Zr), with the balance made up of T (T is at least one transition metal element essentially including Fe, with 10% or less of Fe being optionally substituted by Co) and unavoidable impurities. If [T] is the content (mass%) of T and [B] is the content (mass%) of B, [T]/55.85 > 14[B]/10.8 is satisfied. At least a part of the Pr-Ga alloy is brought into contact with at least a part of the surface of the sintered magnet material, and a first heat treatment is carried out at a temperature of more than 600°C but 950°C or less. A second heat treatment is carried out at a temperature that is lower than the temperature of the first heat treatment and that is from 450°C to 750°C (inclusive).', '制备R-T-B系烧结磁铁材料和Pr-Ga合金。烧结磁铁材料含有27.5-35.0质量％的R（R由至少一种基本上包括Nd的稀土元素组成），0.80-0.99质量％的B，0-0.8质量％的Ga和0-2质量％ M（M由Cu，Al，Nb和Zr中的至少一种组成），余量由T组成（T是至少一种基本上包括Fe的过渡金属元素，其中10％或更少的Fe任选被取代由Co）和不可避免的杂质。如果[T]是T的含量（质量％）并且[B]是B的含量（质量％），则满足[T] /55.85> 14 [B] /10.8。使至少一部分Pr-Ga合金与烧结磁体材料的至少一部分表面接触，并且在高于600℃但950℃的温度下进行第一热处理或减。第二热处理在低于第一热处理温度的温度下进行，并且为450℃至750℃（包括450℃和750℃）。', 'DE602016032241', 1468944000, 'DE602016032241T2', 1584460800, 1584460800, NULL, 1584460800, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 34, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '895', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 40083, 40082, 40084, 11);
INSERT INTO `os_patent` VALUES (23463, 'Method for producing R-T-B system sintered magnet', 'R-T-B系烧结磁铁的制造方法', 'US11177069B2', 'A sintered R-T-B based magnet work contains R: 27.5 to 35.0 mass % (R is at least one rare-earth element which always includes Nd), B: 0.80 to 0.99 mass %, Ga: 0 to 0.8 mass %, M: 0 to 2 mass % (M is at least one of Cu, Al, Nb and Zr), and a balance T (T is at least one transition metal element which always includes Fe, with 10% or less of Fe replaceable by Co). [T]/55.85>14[B]/10.8 is satisfied where [T] is the T content (mass %) and [B] is the B content (mass %). At least a portion of a Pr—Ga alloy is in contact with a portion of the sintered magnet work surface, and a first heat treatment is performed at a temperature between 600° C. and 950° C. A second heat treatment is performed at a temperature lower than the temperature of the first heat treatment and between 450° C. and 750° C.', '烧结的RTB的磁体工作含有R:27.5至35.0质量%(R是至少一个稀土元素,总是包括Nd),B:0.80至0.99质量%,Ga:0至0.8质量%,m:0至2质量%(m是Cu,Al,Nb和Zr中的至少一种),并且平衡T(t是至少一种过渡金属元素,其总是包括Fe,10%或更少的Fe可通过CO可更换))。[T] / 55.85> 14 [b] / 10.8满足其中,其中T含量(质量%)和[B]是B含量(质量%)。PR-GA合金的至少一部分与烧结磁体工作表面的一部分接触,并且在600℃和950℃的温度下进行第一热处理。第二热处理在低于第一热处理温度和450℃和750℃的温度。', 'US15/548466', 1468944000, 'US11177069B2', 1636992000, 1534953600, NULL, 1636992000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, '2015150585 | 2016026583', 'JP | JP', 1438185600, 10, 10, NULL, NULL, 20, 0, 0, 0, 1, NULL, '869', NULL, 'MOORE, ALEXANDRA M', NULL, 'JP1997129424A | JP2012094813A | JP2014086529A | US20100119703A1 | US20130181039A1 | US20140132377A1 | US20140184370A1 | US20140290803A1 | US20150235747A1 | US20160163434A1 | US20160180993A1 | US20160196904A1 | US20180025819A1 | US20180047504A1 | US8846136B2 | WO2012161355A1 | WO2013008756A1 | WO2015020181A1 | WO2015020182A1 | WO2015020183A1', NULL, 'Official Communication issued in International Patent Application No. PCT/JP2016/071244, dated Oct. 4, 2016.', 1, '\\20220510\\5e812abfb3e748ec9bc19dd12bc3f00f.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40080, 40082, 40081, 11);
INSERT INTO `os_patent` VALUES (23464, 'R-T-B系焼結磁石の製造方法', 'r-t-b系烧结磁铁的制造方法', 'JP6733398B2', '【課題】HcJの温度係数が改善され、高温においてHcJの低下が少なく、且つ、高いHcJを得ることができるR-T-B系焼結磁石の製造方法の提供。\n\n【解決手段】R29.5〜35.0質量%、B0.80〜0.90質量%、Ga0.1〜0.8質量%、M0〜2質量%、残部T及び不可避的不純物を含有するR-T-B系焼結磁石素材を準備する工程と、第一のRH拡散処理を実施する工程と、750℃以上1000℃未満で、且つ、前記第一のRH拡散処理の温度よりも低い温度で加熱する第二のRH拡散処理を実施する工程と、前記第二のRH拡散処理の温度よりも低くし、且つ、730℃以上850℃以下で、且つ、前記第二のRH拡散処理の温度よりも低い温度で加熱後、5℃/分以上の冷却速度で300℃まで冷却する高温熱処理を実施する工程と、440℃以上550℃以下の温度で加熱する低温熱処理を実施する工程と、を含む。\n\n【選択図】なし', '要解决的问题：在高温和高H  cJ 下获得低H  cJ 降低，H  cJ 的温度系数得到改善本发明提供一种能够形成RTB系烧结磁铁的方法。\n\n溶液：R29.5至35.0质量％，B 0.80至0.90质量％，Ga 0.1至0.9质量％制备含有8质量％M，0至2质量％M，余量T和不可避免杂质的RTB基烧结磁体材料，进行第一RH扩散处理，在750℃或更高且低于1000℃下加热。并且进行第二RH扩散处理，其中在低于第一RH扩散处理的温度的温度下进行第二RH扩散处理;在低于第二RH扩散处理的温度的温度下进行第二RH扩散处理，在低于850℃且低于第二RH扩散处理的温度的温度下加热后，以5℃/分钟或更高的冷却速率加热至300℃。然后，在440℃以上且550℃以下的温度下进行加热的低温热处理。', 'JP2016146901', 1469548800, 'JP6733398B2', 1595952000, 1517414400, NULL, 1594569600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, '木下 直哉', NULL, 'JP2014216462A | JP2016082176A | WO2012043692A1 | WO2016043039A1', NULL, NULL, 1, '\\20220510\\9b745c4f660c40d5b9c49c4e0995901c.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40085, 40087, 40086, 4);
INSERT INTO `os_patent` VALUES (23465, 'R-T-B系焼結磁石の製造方法', 'r-t-b烧结磁铁的制造方法', 'JP6610957B2', '【課題】磁石表面近傍のみならず、磁石内部の保磁力を向上させることができ(二粒子粒界を厚くすることができ)、磁石寸法調整のための表面研削によっても保磁力向上効果が大きく損なわれることがない、重希土類元素を用いずとも高い保磁力を有するR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】[T1]/[X]のmol比が13.0以上であることを主たる特徴とするR1-T1-X(R1は主としてNd、T1は主としてFe、Xは主としてB)系合金焼結体を準備する工程、R2-Zn系合金を準備する工程、R1-T1-X系合金焼結体1の表面の少なくとも一部にR2-Zn系合金2の少なくとも一部を接触させ、450℃以上800℃以下の温度で熱処理する工程、を含む。\n\n【選択図】図2', '本发明的目的是不仅改善磁体表面附近而且改善磁体内部的矫顽力（双颗粒晶界可以变厚），并且即使通过用于磁体尺寸调整的表面研磨，矫顽力改善效果也很大。本发明公开了一种制造RTB系烧结磁体的方法，该烧结磁体具有高矫顽力而不使用重稀土元素而不会被损坏。\n\n溶液：R1-T1-X（R1主要为Nd，T1主要为Fe，X主要为B）主要基于[T1] / [X]的摩尔比为13.0或更高准备主体，制备R2-Zn合金，使至少一部分R2-Zn合金2与R1-T1-X合金烧结体1的至少一部分表面接触;在800℃或更低的温度下进行热处理。\n\n[选择图]图2', 'JP2016159877', 1471363200, 'JP6610957B2', 1574784000, 1519228800, NULL, 1573142400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 18, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 9, 0, 0, 0, 0, NULL, NULL, NULL, '久保田 昌晴', NULL, 'JP2008263179A | JP2011014668A | JP2014086529A | JP2018505540A | JP6361813B2 | US20150187494A1 | WO2007088718A1 | WO2008032667A1 | WO2012036294A1', NULL, NULL, 1, '\\20220510\\1a4ddc45f7fb4e6da3f36d0809c14112.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 40088, 40090, 40089, 2);
INSERT INTO `os_patent` VALUES (23466, 'R-T-B系焼結磁石の製造方法', 'r-t-b烧结磁铁的制造方法', 'JP6624455B2', '【課題】重希土類元素の含有量を低減しつつ、高いBr及び高いHcJを有するR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】[T]/[B]のmol比が14.0以下であるR-T-B-Cu-M系焼結体を準備する工程と、R-Ga-Fe-A系合金を準備する工程と、R-T-B-Cu-M系焼結体の表面の少なくとも一部に、R-Ga-Fe-A系合金の少なくとも一部を接触させ、700℃以上1100℃以下の温度で第一の熱処理を実施する工程と、第一の熱処理が実施されたR-T-B-Cu-M系焼結体に対して450℃以上600℃以下の温度で第二の熱処理を実施する工程と、によって、[T]/[B]のmol比が14.0超であるR-T-B-Cu-M系焼結磁石を得る。\n\n【選択図】図1', '本发明公开了一种降低重稀土元素含量的同时具有高B r和高H cJ的R-T-B基烧结磁体的制造方法。\n\n解决方案：[T] / [B]的摩尔比是14。制备平均粒径不大于0的RTB-Cu-M基烧结体;制备R-Ga-Fe-A基合金;形成RTB-Cu-M基烧结体的至少一部分表面使至少一部分R-Ga-Fe-A合金接触并在700℃以上且1100℃以下的温度下进行第一热处理的步骤，执行RTB-Cu-M在450℃以上600℃下进行烧结体并且在低于R-T-B-Cu-M基烧结磁体的熔点的温度下进行第二热处理的步骤，从而获得摩尔比为[T] / [B]的R-T-B-Cu-M基烧结磁体。', 'JP2016159879', 1471363200, 'JP6624455B2', 1577203200, 1519228800, NULL, 1575561600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 23, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '久保田 昌晴', NULL, 'JP2007287875A | JP2013207134A | JP6361813B2 | WO2012099186A1 | WO2013008756A1 | WO2015020181A1 | WO2015020183A1', NULL, NULL, 1, '\\20220510\\4a2b2fb7e1d4434186c600fb22163360.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 40091, 40093, 40092, 2);
INSERT INTO `os_patent` VALUES (23467, 'R-T-B系焼結磁石の製造方法', '制造R-T-B基烧结磁体的方法', 'JP6860808B2', '【課題】重希土類元素の含有量を低減しつつ、高いBr及び高いHcJを有するR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】[T]/[B]のmol比が14.0以下であるR-T-B-M系焼結体を準備する工程と、R-Cu-Ga-Fe-A系合金を準備する工程と、R-T-B-M系焼結体の表面の少なくとも一部に、R-Cu-Ga-Fe-A系合金の少なくとも一部を接触させ、700℃以上1100℃以下の温度で第一の熱処理を実施する工程と、第一の熱処理が実施されたR-T-B-M系焼結体に対して450℃以上600℃以下の温度で第二の熱処理を実施する工程と、によって、[T]/[B]のmol比が14.0超であるR-T-B-M系焼結磁石を得る。\n\n【選択図】図1', '要解决的问题：提供一种具有高B  r 和高H  cJ 的R-T-B基烧结磁体的制造方法，同时降低重稀土元素的含量。\n\n解决方案：制备摩尔比[T] / [B]为14.0或更低的RTBM基烧结体的步骤，制备R-Cu-Ga-Fe-A基合金的步骤，RTBM-步骤使至少一部分R-Cu-Ga-Fe-A合金与复合材料的至少一部分表面接触，并在700℃以上且1100℃以下的温度下进行第一热处理。并且，对于经受[T] / [B]的热处理的RTBM基烧结体，在450℃以上且600℃以下的温度下进行第二热处理的步骤获得基于RTBM的烧结磁体。\n\n点域1', 'JP2016159878', 1471363200, 'JP6860808B2', 1618934400, 1519228800, NULL, 1617120000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 25, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 3, 0, 0, 0, 0, NULL, NULL, NULL, '米田 健志', NULL, 'JP2012234971A | JP2016034024A | WO2013008756A1', NULL, NULL, 1, '\\20220510\\5257fe7d1c99436289abda8aa6675c3f.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 40094, 40096, 40095, 2);
INSERT INTO `os_patent` VALUES (23468, 'Diffusion treatment device and method for manufacturing R-T-B system sintered magnet using same', '扩散处理装置及使用该装置制造R-T-B系烧结磁铁的方法', 'US10639720B2', 'A diffusion treatment device includes: a treatment container including a cylindrical main body and first and second lids, the cylindrical main body having a treatment space which is capable of receiving sintered magnet pieces and RH diffusion sources, the first and second lids being capable of hermetically sealing first and second openings, respectively, at opposite ends of the cylindrical main body; a conveyor for conveying the treatment container by a predetermined distance in an x-axis direction while a longitudinal direction of the treatment container is located in a y-axis direction in a rectangular coordinate system xyz; a heating unit including a lower heating section provided under the treatment container and an upper heating section provided above the treatment container, and a first rotating unit for rotating the treatment container around a y-axis while the longitudinal direction of the treatment container is located in the y-axis direction.', '一种扩散处理装置，包括：处理容器，其包括圆筒状的主体以及第一盖和第二盖，该圆筒状主体具有能够容纳烧结磁铁片和RH扩散源的处理空间，所述第一盖和第二盖能够密闭。 在圆筒形主体的相对两端分别密封第一和第二开口。 输送机，其在矩形坐标系xyz中将处理容器的长度方向位于y轴方向上的同时，在x轴方向上以预定距离输送处理容器。 加热单元，其包括设置在所述处理容器下方的下部加热部和设置在所述处理容器上方的上部加热部，以及第一旋转单元，所述第一旋转单元用于在使所述处理容器的长度方向位于下方的状态下使处理容器绕y轴旋转。  y轴方向。', 'US15/754647', 1471536000, 'US10639720B2', 1588608000, 1534953600, NULL, 1588608000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 17, 1, 0, 0, 0, NULL, NULL, NULL, '2015164775', 'JP', 1440345600, 7, 7, NULL, NULL, 20, 0, 0, 0, 1, NULL, '849', NULL, 'SU, XIAOWEI', NULL, 'CN104040655A | JP2000154034A | JP2011129648A | JP2012204696A | JP2014072259A | JP2016189398A | US20080286595A1 | US20100012035A1 | US20120112863A1 | US20130112141A1 | US20140329007A1 | US20140375404A1 | US4362501A | US6735983B1 | WO2007102391A1 | WO2008032668A1 | WO2011007758A1 | WO2012008416A1 | WO2013108830A1 | WO2017018291A1', NULL, 'International Search Report for PCT/JP2016/074242 dated Nov. 1, 2016. cited by applicant.', 1, '\\20220510\\45ba604246cc4424a34d2960ab84089d.png', NULL, NULL, 1, NULL, NULL, 19, NULL, NULL, NULL, 40097, 40099, 40098, 7);
INSERT INTO `os_patent` VALUES (23469, '拡散処理装置およびそれを用いたR-T-B系焼結磁石の製造方法', 'r-t-b型烧结磁体的扩散处理装置及制造方法', 'JP6780646B2', 'A diffusion treatment device includes: a treatment container including a cylindrical main body and first and second lids, the cylindrical main body having a treatment space which is capable of receiving sintered magnet pieces and RH diffusion sources, the first and second lids being capable of hermetically sealing first and second openings, respectively, at opposite ends of the cylindrical main body; a conveyor for conveying the treatment container by a predetermined distance in an x-axis direction while a longitudinal direction of the treatment container is located in a y-axis direction in a rectangular coordinate system xyz; a heating unit including a lower heating section provided under the treatment container and an upper heating section provided above the treatment container, and a first rotating unit for rotating the treatment container around a y-axis while the longitudinal direction of the treatment container is located in the y-axis direction.', '一种扩散处理装置,包括:处理容器,其包括圆筒状的主体以及第一盖和第二盖,该圆筒状主体具有能够容纳烧结磁铁片和RH扩散源的处理空间,所述第一盖和第二盖能够密闭。 在圆筒形主体的相对两端分别密封第一和第二开口。 输送机,其在直角坐标系xyz上将处理容器的长边方向配置在y轴方向上的状态下,在x轴方向上以规定的距离输送处理容器。 加热单元,其包括设置在所述处理容器下方的下部加热部和设置在所述处理容器上方的上部加热部,以及第一旋转单元,所述第一旋转单元在所述处理容器的长度方向位于内部时使所述处理容器绕y轴旋转。  y轴方向。', 'JP2017536405', 1471536000, 'JP6780646B2', 1604419200, 1528300800, NULL, 1603036800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 22, 1, 0, 0, 0, NULL, NULL, NULL, '2015164775', 'JP', 1440345600, 7, 7, NULL, NULL, 9, 0, 0, 0, 0, NULL, NULL, NULL, '佐久 聖子', NULL, 'JP2000154034A | JP2011129648A | JP2012204696A | JP2014072259A | WO2007102391A1 | WO2008032668A1 | WO2011007758A1 | WO2012008416A1 | WO2013108830A1', NULL, NULL, 1, '\\20220510\\3a54d6c501884cd2a6d94a48061e83ca.png', NULL, NULL, 1, NULL, NULL, 26, NULL, NULL, NULL, 40097, 40099, 40098, 7);
INSERT INTO `os_patent` VALUES (23470, '希土類-鉄-窒素系合金粉末の製造方法', '稀土铁氮合金粉末的制造方法', 'JP6759855B2', '【課題】粗大粒子の生成や、磁石結晶で磁気特性を低下させる逆磁区の核となり得る破断面の突起や結晶歪みの発生が抑制され、優れた磁気特性を有する磁石粉末が還元拡散法を用いて低コストで得られる希土類-鉄-窒素系磁石粉末の製造方法を提供する。\n\n【解決手段】還元拡散法により得られる希土類-鉄系母合金粉末を窒化する工程を含む希土類-鉄-窒素系磁石粉末の製造方法であって、磁石原料となる鉄化合物粉末と希土類化合物粉末を、水あるいは有機溶媒中で湿式混合処理し、塩素イオン濃度の総和が0.1重量%以下である処理液から磁石原料を濾別し、乾燥する第一の工程と、得られた前記混合粉末を、水素気流中で熱処理し、得られる還元混合物粉末中の希土類鉄複合酸化物RFeO3(Rは希土類元素)の生成量が6重量%以下となるようにする第二の工程を有する希土類-鉄-窒素系磁石粉末の製造方法により提供する。\n\n【選択図】図1', '要解决的问题：为了抑制可能成为使磁铁结晶使磁特性恶化的反向磁畴的核的断裂面的产生和突起的结晶变形，并且通过使用还原扩散法来减少具有优异的磁特性的磁铁粉末由此以低成本获得稀土 - 铁 - 氮基磁体粉末。\n\n由所得到的稀土类甲还原扩散方法 - 稀土包括氮化铁系母合金粉末的步骤 - 铁 - 氮基磁性粉末的制备方法，铁化合物，其包含一个磁铁原料粉末和稀土类化合物粉末进行湿式混合与水或有机溶剂进行处理，氯离子的浓度的总和为0。1是从重量％或更少的滤出磁铁原料是处理液，干燥的第一步骤，将得到的混合粉末在氢气流中进行热处理，所得到的还原性混合物的粉末的稀土 - 铁的复合氧化物将产物RFeO 3（R为稀土元素）的量设定为等于或小于6重量％的第二步骤它由生产土铁 - 氮基磁体粉末的方法提供。', 'JP2016163672', 1471968000, 'JP6759855B2', 1600790400, 1519833600, NULL, 1599408000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 22, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 6, 0, 0, 0, 1, NULL, NULL, NULL, '池ノ谷 秀行', NULL, 'JP1999310807A | JP2003297660A | JP2010270379A | JP2010270382A', NULL, 'T.Iriyama IEEE TRANSACTIONS ON MAGNETICS,VOL.28,No.5(1992)', 1, '\\20220510\\c12baf8a232a406eae115ac686bcb1f9.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40100, 40102, 40101, 2);
INSERT INTO `os_patent` VALUES (23471, 'PHƯƠNG PHÁP TÁCH NGUYÊN TỐ ĐẤT HIẾM NHẸ VÀ NGUYÊN TỐ ĐẤT HIẾM NẶNG', '分离方法和轻稀土的重稀土元素', 'VN57959A', 'Sáng chế đề cập đến phương pháp tách nguyên tố đất hiếm nhẹ và nguyên tố đất hiếm nặng để thu được chất lẫn giàu nguyên tố đất hiếm nhẹ và nguyên tố đất hiếm nặng ra khỏi phôi gia công chứa nguyên tố đất hiếm nhẹ và nguyên tố đất hiếm nặng, trong đó phương pháp này bao gồm các bước: (1) bước thu hồi oxit hỗn hợp hoặc hỗn hợp bao gồm các oxit của nguyên tố đất hiếm nặng và nguyên tố đất hiếm nhẹ ra khỏi phôi gia công; (2) bước hòa tan oxit hỗn hợp hoặc hỗn hợp bao gồm các oxit của nguyên tố đất hiếm nhẹ và nguyên tố đất hiếm nặng trong axit clohydric và/hoặc axit nitric; (3) bước bổ sung chất gây kết tủa vào dung dịch để tạo ra chất kết tủa; (4) bước nung chất kết tủa; (5) bước cho chất nung thu được vào axit clohydric và/hoặc axit nitric có nồng độ lớn hơn hoặc bằng 0,7mol/l với lượng gấp từ 1,1 lần đến 3,0 lần giới hạn hòa tan trên để tạo ra dung dịch và cặn; và (6) bước tách dung dịch và cặn, nhờ đó tạo ra dung dịch là chất lẫn giàu nguyên tố đất hiếm nhẹ và cặn là chất lẫn giàu nguyên tố đất hiếm nặng.', '本发明涉及一种提取稀土元素和重稀土元素的方法，以从含有轻稀土元素和元素的工件中获得富含稀土元素和重稀土元素的物质。稀有重合金，包括以下步骤：（1）从工件中回收由重稀土元素和轻稀土元素的氧化物组成的混合或混合氧化物; （2）溶解的氧化物或稀土元素的氧化物的混合物盐酸和/或硝酸中的重稀土元素; （3）将沉淀物加入溶液中以产生沉淀物的步骤; （4）沉淀步骤; （5），以便创建在盐酸和/或硝酸的浓度大于或等于0,7mol / l的较高体积从1.1倍的溶解度极限的3.0倍得到的煅烧物质的步骤溶液和残留物;和（6）分离步骤溶液和残留物，从而产生富溶液在物理上是轻稀土类元素，并将残余物在物理上是与丰富的稀土元素沉重。', 'VN1201801097', 1472054400, 'VN57959A', 1529856000, 1529856000, NULL, NULL, '越南', NULL, NULL, NULL, NULL, 8, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 33, 1, 0, 0, 0, NULL, NULL, NULL, '2016064774 | 2015167079', 'JP | JP', 1459094400, 11, 11, NULL, NULL, 0, 0, 0, 0, 0, NULL, '897', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40103, 40105, 40104, 12);
INSERT INTO `os_patent` VALUES (23472, '軽希土類元素と重希土類元素を分離するために有用な方法', '分离轻稀土元素和重稀土元素的有用方法', 'JP6769437B2', '本発明の課題は、軽希土類元素と重希土類元素を分離するために有用な方法を提供することである。その解決手段としての本発明の方法は、(1)軽希土類元素と重希土類元素を含む処理対象物から両者の複合酸化物ないし酸化物の混合物を得る工程(2)得られた軽希土類元素と重希土類元素の複合酸化物ないし酸化物の混合物を、塩酸および/または硝酸に溶解する工程(3)得られた溶液に沈殿剤を加えて沈殿物を得る工程\n\n(4)得られた沈殿物を焼成する工程\n\n(5)得られた焼成物を、濃度が0.7mol/L以上の塩酸および/または硝酸に、溶解上限量の1.1倍〜3.0倍添加して溶液と残渣を得る工程(6)得られた溶液を軽希土類元素リッチな含有物として、残渣を重希土類元素リッチな含有物として、それぞれ分離して得る工程を少なくとも含んでなることを特徴とする方法。', '本发明的一个目的是提供一种可用于分离光稀土元素和重稀土元素的方法。本发明的方法作为该溶液的方法是(1)从包含轻质稀土元素和重质稀土元素(2)的过程对象中获得两种复合氧化物或氧化物的混合物的方法,其具有明显的稀土元件溶解盐酸和/或硝酸(3)中重稀土元素的复合氧化物或氧化物的混合物的步骤,得到沉淀物,得到沉淀物以获得沉淀物\n\n(4)煅烧所得沉淀物的步骤\n\n(5)通过将溶液和残余物加入盐酸和/或浓度为0.7mol / L或更高的浓度的盐酸和/或硝酸获得的溶液,以及通过获得溶液(6)获得的溶液一种根据至少将残余物分离为重富富富含量的含有重物含有重稀土元素的富含含量的含量的方法的方法。', 'JP2017536482', 1472054400, 'JP6769437B2', 1602604800, 1528905600, NULL, 1601222400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 18, 1, 0, 0, 0, NULL, NULL, NULL, '2015167079 | 2016064774', 'JP | JP', 1440518400, 11, 11, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, '坂本 薫昭', NULL, 'JP1990080530A | JP2002080988A | WO2013018710A1 | WO2014057922A1', NULL, NULL, 1, '\\20220510\\17b80ec1f6324008a51aa4faadfd1df9.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40103, 40105, 40104, 12);
INSERT INTO `os_patent` VALUES (23473, 'Useful method for separating light rare earth elements and heavy rare earth elements', '分离轻稀土元素和重稀土元素的有用方法', 'US10865463B2', 'A method for separating a light rare earth element and a heavy rare earth element includes at least the steps of: (1) obtaining, from a workpiece containing a light rare earth element and a heavy rare earth element, a composite oxide or mixture of oxides of the two; (2) dissolving the obtained composite oxide or mixture of oxides in hydrochloric acid and/or nitric acid; (3) adding a precipitant to the obtained solution to give a precipitate; (4) calcining the obtained precipitate; (5) adding the obtained calcine in an amount of 1.1 times to 3.0 times the upper solubility limit to hydrochloric acid and/or nitric acid having a concentration of 0.7 mol/L or more to give a solution and a residue; and (6) separating the obtained solution and residue, thereby giving the solution as a light rare earth element-rich inclusion and the residue as a heavy rare earth element-rich inclusion.', '分离轻稀土元素和重稀土元素的方法至少包括以下步骤:(1)从包含轻稀土元素和重稀土元素的工件中获得复合氧化物或氧化物混合物在两个之中;(2)将得到的复合氧化物或氧化物混合物溶于盐酸和/或硝酸中;(3)在得到的溶液中添加沉淀剂而产生沉淀。(4)煅烧所得沉淀物;(5)将所得到的煅烧钙以溶解度上限的1.1倍至3.0倍的量添加至浓度为0.7mol / L以上的盐酸和/或硝酸中,得到溶液和残渣。(6)分离得到的溶液和残渣,得到溶液,为轻稀土元素夹杂物,残渣为重稀土元素夹杂物。', 'US15/754700', 1472054400, 'US10865463B2', 1607961600, 1535558400, NULL, 1607961600, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 16, 1, 0, 0, 0, NULL, NULL, NULL, '2015167079 | 2016064774', 'JP | JP', 1440518400, 11, 11, NULL, NULL, 22, 0, 0, 0, 5, NULL, '875', NULL, 'WALKER, KEITH', 'ANDERSON, BENJAMIN C', 'CN101012500A | CN101633984A | CN102011020A | CN102660688A | CN102703697A | CN102719674A | CN103540756A | CN103717764A | CN103917672A | CN1077603A | CN1077603C | CN1078751A | CN1156761A | CN1675131A | JP2002080988A | US20140186239A1 | US20170022071A1 | US5728355A | US6093376A | WO2012149642A1 | WO2014057922A1 | WO2014071510A1', NULL, 'Binnemans et al, Recycling of rare earths: a critical review, 2013. Journal of Cleaner Production, vol. 51, pp. 1-22 (Year: 2013). cited by examiner | Extended European Search Report for European Patent Application No. 16839356.9 dated Mar. 25, 2019 (5 pages). cited by applicant | International Search Report for International Application No. PCT/JP2016/074891 dated Sep. 20, 2016 (1 Sheet). cited by applicant. | Lee et al, \"Selective Leaching Process for Neodymium Recovery from Scrap Nd--Fe--B Magnet\", 2013. Metallurgical and Materials Transactions A, vol. 44A, pp. 5825-5833 (Year: 2013). cited by examiner | Office Action of Chinese Patent Application No. 201680048772.X dated Jul. 1, 2019 (7 sheets). cited by applicant', 1, '\\20220510\\f60c138089134d348672806909e7ee46.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40103, 40105, 40104, 12);
INSERT INTO `os_patent` VALUES (23474, 'Useful method for separating light rare earth elements and heavy rare earth elements', '分离轻稀土元素和重稀土元素的有用方法', 'EP3342886B1', 'An object of the present invention is to provide a method useful for separating a light rare earth element and a heavy rare earth element, which, for example, when a light rare earth element and a heavy rare earth element are separated from a workpiece containing a light rare earth element and a heavy rare earth element by a solvent extraction method, makes it possible to reduce the amount of extractant or organic solvent used or downsize the apparatus, or makes it possible to reduce the work burden on the process, such as the analysis of the content ratio between the light rare earth element and the heavy rare earth element contained in the workpiece. The method of the present invention as a means for resolution is characterized by including at least: (1) a step of obtaining, from a workpiece containing a light rare earth element and a heavy rare earth element, a composite oxide or mixture of oxides of the two; (2) a step of dissolving the obtained composite oxide or mixture of oxides of a light rare earth element and a heavy rare earth element in hydrochloric acid and/or nitric acid; (3) a step of adding a precipitant to the obtained solution to give a precipitate; (4) a step of calcining the obtained precipitate; (5) a step of adding the obtained calcine in an amount of 1.1 times to 3.0 times the upper solubility limit to hydrochloric acid and/or nitric acid having a concentration of 0.7 mol/L or more to give a solution and a residue; and (6) a step of separating the obtained solution and residue, thereby giving the solution as a light rare earth element-rich inclusion and the residue as a heavy rare earth element-rich inclusion (here, the term \"rich\" means that the content ratio of the concerned rare earth element to the other rare earth element is higher than the content ratio in the workpiece).', '本发明的一个目的是提供一种用于分离轻稀土元素和重稀土元素的方法，例如，当轻稀土元素和重稀土元素与含有稀土元素的工件分离时。通过溶剂萃取法，轻稀土元素和重稀土元素可以减少所用的萃取剂或有机溶剂的量或减小设备的尺寸，或者可以减少工艺上的工作负担，例如分析工件中轻稀土元素与重稀土元素的含量比。作为拆分手段的本发明方法的特征在于至少包括：（1）从含有轻稀土元素和重稀土元素的工件获得复合氧化物或氧化物混合物的步骤两个;（2）将所得复合氧化物或轻稀土元素和重稀土元素的氧化物的混合物溶解在盐酸和/或硝酸中的步骤;（3）向所得溶液中加入沉淀剂，得到沉淀物的步骤;（4）煅烧所得沉淀物的步骤;（5）将得到的煅烧物的溶解度上限的1.1倍~3.0倍添加到浓度为0.7mol / L以上的盐​​酸和/或硝酸中，得到溶液和残渣的步骤。（6）分离所得溶液和残余物的步骤，从而得到溶液作为富含稀土元素的夹杂物和残留物作为富含重稀土元素的夹杂物（这里，术语“富含”是指有关稀土元素与其他稀土元素的含量比高于其中的含量比工件）。', 'EP2016839356', 1472054400, 'EP3342886B1', 1621958400, 1530633600, NULL, 1621958400, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 22, 1, 0, 0, 0, NULL, NULL, NULL, '2015167079 | 2016064774', 'JP | JP', 1440518400, 11, 11, NULL, NULL, 6, 0, 0, 0, 0, NULL, '874', NULL, NULL, NULL, 'JP2002080988A | JP2016000530A | WO2012149642A1 | WO2013018710A1 | WO2014057922A1 | WO2014071510A1', NULL, NULL, 1, '\\20220510\\f485a55a75994420b2cd06dd2aa253ce.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, '有效:DE,BE,LU,FR,GB,IE | 失效:RS,NO,FI,PT,BG,DK,LT,LV,HR,SE,MC,SK,SM,EE,CH,IS,GR,ES,AT,CZ,PL,RO,LI,NL | 未确认:HU,SI,MK,MT,IT,AL,CY,TR', 40103, 40105, 40104, 12);
INSERT INTO `os_patent` VALUES (23475, 'NUTZBARES VERFAHREN ZUR TRENNUNG VON LEICHTEN SELTENERDELEMENTEN UND SCHWEREN SELTENERDELEMENTEN', '分离轻稀土元素和重稀土元素的可用方法', 'DE602016058556T2', 'The present invention addresses the problem of providing a useful method for separating light rare earth elements and heavy rare earth elements. As a means for solving the problem, the method of the present invention is characterized by being formed by including at least: (1) a step for obtaining, from an object to be treated which includes a light rare earth element and a heavy rare earth element, a composite oxide or a mixture of oxides of both; (2) a step for dissolving the obtained composite oxide or the mixture of oxides of the light rare earth element and the heavy rare earth element in hydrochloric acid and/or nitric acid; (3) a step for adding a precipitant to the obtained solution to obtain a precipitate; (4) a step for firing the obtained precipitate; (5) a step for adding 1.1 to 3.0 times the dissolution upper limit amount of the obtained fired product to hydrochloric acid and/or nitric acid having a concentration of 0.7 mol/L or greater to obtain a solution and a residue; and (6) a step for separating to obtain each, the obtained solution serving as a light rare earth element-rich inclusion, and the residue serving as a heavy rare earth element inclusion.', '本发明解决了提供分离轻稀土元素和重稀土元素的有用方法的问题。作为解决该问题的手段，本发明的方法的特征在于，通过至少包括：（1）从待处理物体获得包括轻稀土元素和重稀土的步骤而形成。元素，复合氧化物或两者的氧化物混合物; （2）将所得复合氧化物或轻稀土元素和重稀土元素的氧化物的混合物溶解在盐酸和/或硝酸中的步骤; （3）向所得溶液中加入沉淀剂以得到沉淀物的步骤; （4）烧制所得沉淀物的步骤; （5）将得到的烧成物的溶解上限量的1.1~3.0倍添加到浓度为0.7mol / L以上的盐​​酸和/或硝酸中，得到溶液和残渣的步骤。 （6）分离得到各自的步骤，所得到的溶液作为富含稀土元素的夹杂物，并且残渣用作重稀土元素夹杂物。', 'DE602016058556', 1472054400, 'DE602016058556T2', 1621958400, 1621958400, NULL, 1621958400, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 33, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '855', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40106, 40105, 40107, 12);
INSERT INTO `os_patent` VALUES (23476, 'マグネトロンスパッタリング用磁場発生装置', '用于磁控溅射的磁场发生器', 'JP2018044204A', '【課題】ターゲット上の磁束密度の分布を平均化し、ターゲットの利用効率を向上できるマグトロンスパッタリング用磁場発生装置を提供する。\n\n【解決手段】ターゲット表面に磁場を発生させるためのレーストラック形状のマグネトロンスパッタリング用磁場発生装置であって、磁性体からなるベース上に、(a)直線状に配置された中央部永久磁石(垂直磁化)と、(b)中央部永久磁石を取り囲むように長方形状に配置された第一の中間部永久磁石(垂直磁化)と、(c)第一の中間部永久磁石の長辺の外側面に当接するようにベースから磁気空隙を介して配置された一対の第二の中間部永久磁石(水平磁化)と、(d)第二の中間部永久磁石の外側に離間して配置された一対の第三の中間部永久磁石(垂直磁化)と、(d)これらの永久磁石を取り囲む長方形状に配置された外周部永久磁石(垂直磁化)とを有することを特徴とする。\n\n【選択図】図1(a)', '本发明要解决的技术问题是提供一种用于磁控溅射的磁场产生装置，该磁场产生装置能够对目标上的磁通量密度分布进行平均，并提高目标的利用效率。\n\n本发明公开了一种用于磁道溅射的磁控溅射磁场发生装置，用于在靶表面产生磁场，包括：（a）中心永磁体，沿直线排列（垂直（b）矩形形状，以围绕中心部分永磁体的方式布置一个中间永久磁铁（垂直磁化），和（c）一对第二中间部分（c），其经由磁隙从基座设置，以便与第一中间部分永磁体的长边的外侧表面接触永久磁铁（水平磁化），（d）与第二中间部分永久磁铁隔开设置的一对第三中间部分永久磁铁（垂直磁化）和（d）包围这些永久磁铁的矩形形状的外周永久磁铁（垂直磁化）。', 'JP2016179338', 1473782400, 'JP2018044204A', 1521648000, 1521648000, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 19, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\884b92d56ee84528bb9283c164d68a37.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 40108, 40110, 40109, 1);
INSERT INTO `os_patent` VALUES (23477, 'R-T-B系焼結磁石の製造方法', 'r-t-b烧结磁铁的制造方法', 'JP6623995B2', '【課題】R-T-B系焼結磁石に重希土類元素RHを拡散させてHcJを向上させるために重希土類元素RHを含む粉末粒子の層をR-T-B系焼結磁石の表面に均一に無駄なく効率的に塗布する。\n\n【解決手段】R-T-B系焼結磁石の製造方法は、DyおよびTbの少なくとも一方である重希土類元素RHの合金または化合物(RHはDy、Tbから選ばれる1種以上、RH化合物はRHフッ化物、RH酸フッ化物、RH酸化物から選ばれる1種以上)の粉末がバインダと共に造粒された造粒粉末を用意する工程と、R-T-B系焼結磁石(Rは希土類元素、TはFeまたはFeとCo)の少なくとも表面を加熱し、焼結磁石表面に造粒粉末を付着させる付着工程と、造粒粉末が付着した焼結磁石を焼結温度以下の温度で熱処理して、造粒粉末に含まれる重希土類元素RHを焼結磁石の表面から内部に拡散する拡散工程とを含む。\n\n【選択図】図1A', '阿通过在RTB系烧结磁铁扩散的重稀土类元素RHħ&lt;子&gt; cJ的&lt;/子&gt;粉末颗粒，包括重稀土类元素RH在为了提高RTB系烧结磁铁的表面的层均匀地高效应用而不浪费。\n\n一种用于制造RTB系烧结磁铁中，重稀土类元素RH为Dy和Tb中的至少一种的合金或化合物的方法（RH为Dy，1个或多个从Tb时，RH化合物RH氟化物选择RH的氟氧化物的步骤，一种或RH氧化物多个所选的粉末）是与粘合剂造粒制得的造粒粉，RTB系烧结磁铁（R为稀土类元素，T是Fe或者FeCo）在烧结磁体的表面上被加热沉积的造粒粉末，并且热处理该烧结磁铁造粒粉末的沉积步骤附着在烧结温度以下的温度在重稀土类元素RH包括在从烧结磁体的表面上的粒状粉末的内部和一个扩散扩散步骤。', 'JP2016186683', 1474819200, 'JP6623995B2', 1577203200, 1522857600, NULL, 1575561600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 9, 0, 0, 0, 0, NULL, NULL, NULL, '秋山 直人', NULL, 'JP1989062369A | JP2007123748A | JP2008263179A | JP2009302236A | JP2012248827A | JP2012248828A | WO2006043348A1 | WO2008032426A1 | WO2015163397A1', NULL, NULL, 1, '\\20220510\\40ae8e524a4442e2ae056bd2c4d9b3af.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 40111, 40113, 40112, 2);
INSERT INTO `os_patent` VALUES (23478, 'R-T-B系焼結磁石の製造方法', 'r-t-b烧结磁铁的制造方法', 'JP6623998B2', '【課題】RHを使用することなく、高いBr、HcJおよびHk/HcJを有するR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】\n\n質量%で、R:27.5〜34.0%(Rは、希土類元素の少なくとも一種でありNdおよびPrの少なくとも一方を必ず含む)、B:0.85〜0.93%、Ga:0.2〜0.7%、Cu:0.05〜0.7%、Al:0.05〜0.4%、およびT:61.5%以上(Tは、FeとCoであり質量比でTの90%以上がFeである)を含み、式(1)([T]-72.3[B]>0)および(2)(([T]-72.3[B])/55.85<13[Ga]/69.72)を満足するR-T-B系焼結磁石の製造方法であり、R-T-B系合金を準備する工程と、該合金を水素加圧雰囲気で5℃以上350℃以下に加熱して水素脆化した後、3000Pa以下の減圧雰囲気又は不活性ガス雰囲気で750℃以上850℃以下に加熱する脱水素処理を行う水素粉砕工程と、合金粗粉末を粉砕する微粉砕工程と、合金粉末を成形する成形工程と、成形体を焼結する焼結工程と、を含む製造方法。\n\n【選択図】なし', '解决的问题：提供一种不使用RH而具有高的B[R，H J和H ķ/ H J 的基于R-T-B的烧结磁体的方法。\n\n [解决方案]\n\n 质量％，R：27.5〜34.0％（R为稀土元素中的至少一种，且总是含有Nd和Pr中的至少一种），B：0.85〜0.93％，Ga：0.2〜0.7％，Cu：0.05〜1.0％。  0.7％，Al：0.05〜0.4％，T：61.5％以上（T为Fe，Co，T的90质量％以上为Fe），具有式（1）（[T]-  72.3 [B]> 0）和（2）（（[[T] -72.3 [B]）/ 55.85 <13 [Ga] /69.72） 在将合金在氢气压力气氛中制备并加热至5℃以上且350℃以下以使氢脆化的步骤之后，通过在3000Pa以下的减压气氛或惰性气体气氛中加热至750℃以上且850℃以下来脱水。 一种制造方法，包括：进行基本处理的氢粉碎步骤；将合金粗粉粉碎的细粉碎步骤；形成合金粉的成型步骤；以及烧结成型体的烧结步骤。\n\n [选择图]无', 'JP2016189967', 1474992000, 'JP6623998B2', 1577203200, 1522857600, NULL, 1575561600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 4, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '秋山 直人', NULL, 'JP2004111481A | JP2004256877A | JP2006210893A | JP2012204696A | JP2015193925A | JP2016129249A | WO2013008756A1', NULL, NULL, 1, '\\20220510\\e18e65b33fff4196ab15c65302a44abf.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 40114, 40116, 40115, 2);
INSERT INTO `os_patent` VALUES (23479, 'R-T-B系焼結磁石の製造方法', 'r-t-b烧结磁铁的制造方法', 'JP6617672B2', '【課題】R-T-B系焼結磁石にPrおよびGaを拡散させてHcJを向上させるためにPr-Ga合金を含む粉末粒子の層をR-T-B系焼結磁石の表面に均一に無駄なく効率的に塗布する。\n\n【解決手段】R-T-B系焼結磁石の製造方法は、Pr-Ga合金の粉末がバインダと共に造粒された造粒粉末を用意する工程と、R-T-B系焼結磁石の少なくとも表面を加熱し、焼結磁石表面に造粒粉末を付着させる付着工程と、造粒粉末が付着した焼結磁石を焼結温度以下の温度で熱処理して、造粒粉末に含まれるPrおよびGaを焼結磁石の表面から内部に拡散する拡散工程とを含む。\n\n【選択図】図1', '要解决的问题：为了通过将Pr和Ga扩散到RTB系烧结磁体中来改善HJCJ，将含有Pr-Ga合金的粉末颗粒层均匀地沉积在RTB系烧结磁体的表面上有效无浪费。\n\n一种RTB系烧结磁铁的制造方法，其特征在于，包括：准备将Pr-Ga合金的粉末与粘合剂一起造粒而成的造粒粉末;至少对RTB系烧结磁铁的表面进行加热，粘结步骤，将造粒粉粘附到磁体表面;以及在等于或低于烧结温度的温度下对附着有造粒粉的烧结磁体进行热处理的步骤，并且将Pr和Ga扩散到烧结磁体的内部。', 'JP2016190670', 1475078400, 'JP6617672B2', 1575993600, 1522857600, NULL, 1574352000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '秋山 直人', NULL, 'JP1989062369A | JP2007123748A | JP2009302236A | JP2014086529A | WO2006043348A1 | WO2008032426A1 | WO2016133071A1', NULL, NULL, 1, '\\20220510\\3827d8ef04ee42f89e82b23cf1850ce7.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40117, 40119, 40118, 2);
INSERT INTO `os_patent` VALUES (23480, 'R-T-B系焼結磁石の製造方法およびR-T-B系焼結磁石', '基于r-t-b的烧结磁体的制造方法和基于r-t-b的烧结磁体', 'JP6794993B2', 'The present invention comprises: a step of preparing an R-T-B based sintered magnet 100; a step of performing a heat treatment at or below the sintering temperature of the R-T-B based sintered magnet 100, with an RLM alloy (RL is Nd and/or Pr, and M is one or more elements selected from Cu, Fe, Ga, Co, and Ni) powder, and an RH fluoride (RH is Dy and/or Tb) powder present on the surface 120 of the R-T-B based sintered magnet 100; and a step of grinding the surface 120 of the R-T-B based sintered magnet 400 μm or less in the depth direction, after the heat treatment. The RLM alloy contains 50 at% or more of RL, and the melting point of the RLM alloy is no greater than the temperature of the heat treatment. The heat treatment is performed with the RLM alloy powder and the RH fluoride powder present on the surface of the R-T-B based sintered magnet at a mass ratio of RLM alloy:RH fluoride = 96:4-50:50.', '本发明包括:制备基于R-T-B的烧结磁体100的步骤;和用RLM合金(RL为Nd和/或Pr,M为选自Cu,Fe,Ga,Co中的一种或多种元素)在RTB基烧结磁体100的烧结温度或低于烧结温度的温度下进行热处理的步骤。RTB类烧结磁铁100的表面120上存在RH氟化物(RH是Dy和/或Tb)粉末。热处理后,进行深度方向为400μm以下的R-T-B系烧结磁铁的表面120的研磨的工序。RLM合金包含50原子%以上的RL,并且RLM合金的熔点不大于热处理的温度。用存在于R-T-B基烧结磁体表面上的RLM合金粉末和RH氟化物粉末以RLM合金∶RH氟化物= 96∶4-50∶50的质量比进行热处理。', 'JP2017546481', 1475424000, 'JP6794993B2', 1606838400, 1533139200, NULL, 1605456000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 23, 1, 0, 0, 0, NULL, NULL, NULL, '2015205709', 'JP', 1445184000, 5, 5, NULL, NULL, 10, 0, 0, 0, 0, NULL, NULL, NULL, '秋山 直人', NULL, 'JP2007287874A | JP2007287875A | JP2012234971A | JP2012248827A | JP2012248828A | JP2013236071A | JP2014063998A | JP2014130888A | WO2006043348A1 | WO2008075709A1', NULL, NULL, 1, '\\20220510\\d0260b1f09a543f58c7b45634fd3610a.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40120, 40122, 40121, 5);
INSERT INTO `os_patent` VALUES (23481, 'R-T-B系磁石の製造方法', 'R-t-b磁铁的制造方法', 'JP6691667B2', 'PROBLEM TO BE SOLVED: To provide a method for producing R-T-B based magnets having high Band high H, while reducing the content of heavy rare earth elements.SOLUTION: R3-T2-B-Cu-M2 based magnets having a molar ratio of [T2]/[B] of more than 14.0 can be obtained by a method which includes the steps of: preparing an R1-T1-B-Cu-M1 based alloy bulk body having a molar ratio of [T1]/[B] of 14.0 or less; preparing an R2-Ga-Fe-A based alloy; bringing at least a part of the R2-Ga-Fe-A based alloy into contact with at least a part of the surface of the R1-T1-B-Cu-M1 based alloy bulk body and performing a first heat treatment at a temperature of 700°C or above and 950°C or below; and subjecting the R1-T1-B-Cu-M1 based alloy bulk body having been subjected to the first heat treatment to a second heat treatment at a temperature of 450°C or above and 600°C or below.SELECTED DRAWING: Figure 1', '解决的问题：提供一种制备具有高带高H的RTB基磁体，同时减少重稀土元素含量的方法。解决方案：摩尔比为[T2]的R3-T2-B-Cu-M2基磁体 可以通过包括以下步骤的方法获得大于14.0的] / [B]：制备具有[T1] / [B]的摩尔比为14.0的R1-T1-B-Cu-M1基合金块体。 或更少; 制备R2-Ga-Fe-A基合金； 使R2-Ga-Fe-A基合金的至少一部分与R1-T1-B-Cu-M1基合金块体的至少一部分表面接触并在一定温度下进行第一热处理 700°C以上且950°C以下 将经过第一热处理的R1-T1-B-Cu-M1基合金块体在450°C以上且600°C以下的温度下进行第二次热处理。', 'JP2016197944', 1475683200, 'JP6691667B2', 1589299200, 1523462400, NULL, 1586880000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 33, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 12, 0, 0, 0, 0, NULL, NULL, NULL, '秋山 直人', NULL, 'JP2003264115A | JP2007287875A | JP2011210879A | JP2012216804A | JP2013207134A | JP2014225623A | JP2015220335A | WO2012036294A1 | WO2012099186A1 | WO2013008756A1 | WO2015020181A1 | WO2015020183A1', NULL, NULL, 1, '\\20220510\\574cd57f6d30469eadb8671bb4d9f74c.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40123, 40125, 40124, 2);
INSERT INTO `os_patent` VALUES (23482, 'R-T-B系磁石の製造方法', 'R-t-b磁铁的制造方法', 'JP6691666B2', '【課題】重希土類元素の含有量を低減しつつ、高いBr及び高いHcJを有するR-T-B系磁石の製造方法を提供する。\n\n【解決手段】[T1]/[B]のmol比が14.0以下であるR1-T1-B-Cu-M1系合金バルク体を準備する工程と、R2-Ga-Fe-A系合金を準備する工程と、R1-T1-B-Cu-M1系合金バルク体の表面の少なくとも一部に、R2-Ga-Fe-A系合金の少なくとも一部を接触させ、700℃以上950℃以下の温度で第一の熱処理を実施する工程と、第一の熱処理が実施されたR1-T1-B-Cu-M1系合金バルク体に対して450℃以上600℃以下の温度で第二の熱処理を実施する工程と、によって、[T2]/[B]のmol比が14.0超であるR3-T2-B-Cu-M2系磁石を得る。\n\n【選択図】図1', '要解决的问题：提供一种具有高B rr和高H cj的RTB系统磁体的制造方法，同时减少重稀土元素的含量。\n\n解决方案：[T1] / [B]的摩尔比为14。至少部分表面的工艺 R1-T1-B-Cu-M1 系统合金的0或更少的准备, 工艺准备 R2-Ga-Fe-A 合金和大块 R1-T1-B-Cu-M1 系统合金 R1-T1-B-Cu-M1 系统合金大量用于热处理过程, 在温度高于700摄氏度 c 和950摄氏度或更少接触至少一些合金 R2-GA-Fe-A 和第一次实施4的情况下, 执行第一热。以及在50℃以上且600℃以下的温度下进行第二热处理的步骤，由此获得摩尔比[T 2] / [B]大于14.0的R 3 -T 2 -B-Cu-M 2磁体。', 'JP2016197943', 1475683200, 'JP6691666B2', 1589299200, 1523462400, NULL, 1586880000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 33, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 12, 0, 0, 0, 0, NULL, NULL, NULL, '秋山 直人', NULL, 'JP2003264115A | JP2007287875A | JP2011210879A | JP2012216804A | JP2013207134A | JP2014225623A | JP2015220335A | WO2012036294A1 | WO2012099186A1 | WO2013008756A1 | WO2015020181A1 | WO2015020183A1', NULL, NULL, 1, '\\20220510\\24511ff9d2f84ae5a25b57b78b3dd36f.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40126, 40128, 40127, 2);
INSERT INTO `os_patent` VALUES (23483, 'R-T-B系焼結磁石の製造方法', 'r-t-b系烧结磁铁的制造方法', 'JP6743650B2', 'PROBLEM TO BE SOLVED: To manufacture an R-T-B based sintered magnet by using a RH diffusion source, capable of cost reduction and having high Himprovement effect, as diffusion source for diffusing RH to the R-T-B based sintered magnet.SOLUTION: A manufacturing method of R-T-B based sintered magnet includes a step of preparing an R-T-B based sintered magnet, and a step of performing heat treatment of the R-T-B based sintered magnet, in a state where the powder of RLM1M2 alloy (RL is one kind or more selected from Nd, Pr, and M1, M2 are one kind or more selected from Cu, Fe, Ga, Co, Ni, Al, M1=M2 is acceptable), and the powder of RH carbonate (RH is Dy and/or Tb) exist on the surface of the R-T-B based sintered magnet.SELECTED DRAWING: None', '解决的问题:使用能够降低成本并且具有高的Himproving效果的RH扩散源作为将RH扩散到RTB基烧结磁体的扩散源来制造RTB基烧结磁体。解决方案:基于RTB的制造方法 烧结磁铁包括在以RLM1M2合金(RL为选自Nd,Pr和 M1,M2是选自Cu,Fe,Ga,Co,Ni,Al中的一种或多种,​​M1 = M2是可接受的,并且在其表面上存在RH碳酸盐的粉末(RH是Dy和/或Tb)。 基于RTB的烧结磁体。', 'JP2016210420', 1477497600, 'JP6743650B2', 1597766400, 1525881600, NULL, 1596384000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '鈴木 孝章', NULL, 'JP2000144275A | WO2006043348A1 | WO2007119846A1 | WO2015122422A1 | WO2015163397A1', NULL, NULL, 1, '\\20220510\\2fbcae96d86c4b33be5b1fa4a5ada6d2.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 40129, 40131, 40130, 2);
INSERT INTO `os_patent` VALUES (23484, 'R-T-B系焼結磁石の製造方法', 'r-t-b系烧结磁铁的制造方法', 'JP6743649B2', 'PROBLEM TO BE SOLVED: To manufacture an R-T-B based sintered magnet by using a RH diffusion source, capable of cost reduction and having high Himprovement effect, as a diffusion source for diffusing RH to the R-T-B based sintered magnet.SOLUTION: A manufacturing method of R-T-B based sintered magnet includes a step of preparing an R-T-B based sintered magnet, and a step of performing heat treatment of the R-T-B based sintered magnet at the sintering temperature or less, in a state where the powder of RLM1M2 alloy (RL is one kind or more selected from Nd, Pr, and M1, M2 are one kind or more selected from Cu, Fe, Ga, Co, Ni, Al, M1=M2 may be acceptable), and the powder of RH oxalate (RH is Dy and/or Tb) exist on the surface of the R-T-B based sintered magnet.SELECTED DRAWING: None', '解决的问题:通过使用能够降低成本并具有高的改进效果的RH扩散源作为将RH扩散到RTB基烧结磁体的扩散源来制造RTB基烧结磁体。解决方案:RTB的制造方法 系烧结磁体包括:准备RTB系烧结磁体的步骤;以及在RLM1M2合金(RL为一种以上粉末)的状态下,在烧结温度以下对RTB系烧结磁体进行热处理的步骤。 选自Nd,Pr和M1,M2为选自Cu,Fe,Ga,Co,Ni,Al中的一种或多种,​​M1 = M2是可接受的),以及草酸RH的粉末(RH为Dy和/或 Tb)存在于RTB基烧结磁铁的表面上。', 'JP2016210419', 1477497600, 'JP6743649B2', 1597766400, 1525881600, NULL, 1596384000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '鈴木 孝章', NULL, 'JP1989183415A | WO2006043348A1 | WO2007119846A1 | WO2015122422A1 | WO2015163397A1', NULL, NULL, 1, '\\20220510\\ea3ef402760447b78d8d561f28f86b22.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 40132, 40134, 40133, 2);
INSERT INTO `os_patent` VALUES (23485, 'Method for producing r-t-b sintered magnet', '生产r-t-b烧结磁体的方法', 'IN201647039773A', 'This invention includes a step for performing a heat treatment at a temperature equal to or below the sintering temperature of an R T B sintered magnet when an RLM alloy (RL: Nd and/or Pr and M: one or more element selected from Cu Fe Ga Co and Ni) and a RH fluoride (RH: Dy and/or Td) powder has been provided on the surface of the R T B sintered magnet. The RLM alloy contains 50% (atom basis) or more of RL and has a melting point equal to or below the temperature of the heat treatment. The heat treatment is performed in a state in which the RLM alloy powder and the RH fluoride powder are present on the surface of the R T B sintered magnet at an RLM alloy:RH fluoride ratio (mass) of 96:3 5:5.', '本发明包括在RLM合金（RL：Nd和/或Pr和M：选自CuFeGaCo的一种或多种元素）中在等于或低于RTB烧结磁体的烧结温度的温度下进行热处理的步骤和Ni）和RH氟化物（RH：Dy和/或Td）粉末。RLM合金含有50％（原子基准）以上的RL，并且具有等于或低于热处理温度的熔点。热处理在RLM合金:RF氟化物比（质量）为96：3 5：5的状态下在RLB合金粉末和RH氟化物粉末存在于R T B烧结磁体的表面上的状态下进行。', 'IN201647039773', 1479744000, 'IN201647039773A', 1482422400, 1482422400, NULL, NULL, '印度', NULL, NULL, NULL, NULL, 8, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 55, 1, 0, 0, 0, NULL, NULL, NULL, '2014133621 | 2014090929', 'JP | JP', 1404057600, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\7d06cabe2aef464ab8e11e3916125f2a.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 40135, 39947, 40136, 14);
INSERT INTO `os_patent` VALUES (23486, 'R-T-B系焼結磁石の製造方法', 'R-T-B基烧结磁体的制备方法', 'JP6213697B1', '1)成形体を1000℃以上1100℃以下の温度で焼結後、(条件a)10℃/分以下で500℃まで降温、又は(条件b)800℃以上950℃以下の第1熱処理温度に保持する第1熱処理をした後、10℃/分以下で500℃まで降温、を実施し、27.5〜34.0質量%のR(Rは希土類元素のうち少なくとも一種でありNdを必ず含む)と、0.85〜0.93質量%のBと、0.20〜0.70質量%のGaと、0.05〜0.50質量%のCuと、0.05〜0.50質量%のAlと、を含有し、残部がT(TはFeとCoであり、質量比でTの90%以上がFeである)および不可避不純物であり、式(1)[T]-72.3[B]>0および式(2)([T]-72.3[B])/55.85<13[Ga]/69.72(なお、[T]は質量%で示すTの含有量であり、[B]は質量%で示すBの含有量であり、[Ga]は質量%で示すGaの含有量である)を満足するR-T-B系焼結磁石素材を準備する工程と、2)前記R-T-B系焼結磁石素材を650℃以上750℃以下の第2熱処理温度に加熱して第2熱処理をした後、5℃/分以上で400℃まで冷却する熱処理工程と、を含むR-T-B系焼結磁石の製造方法である。', '1)在烧结1000℃或更高的温度和1100℃以下后,(条件a)10℃/ mmin或更低10℃/ min或更低,或(条件b)在保持待保持的第一热处理后,第一热处理温度为800℃以上且950℃或更小。将温度降至500℃或更低,并在500℃下进行温度。并且R(r是总是包括稀土元素和Nd中的至少一个),其余的剩余物是T(t是0.05至0.50重量%的Fe和Co,0.05至0.50重量% Cu和0.05至0.50重量%的Cu和0.05至0.50重量%的Al。和90%以上的质量比,不可避免的杂质,等式(1)[T] -72.3 [b]> 0和式(2)([T] -72.3 [b])/ 55.85 <13 [Ga] / 69.72([t]是质量%所示的T的含量,[b]是%%的B的含量按质量,并且通过重量%的GA表示,制备满足基于RTB的烧结磁体材料的含量的RTB的烧结磁体材料,并且将RTB的烧结磁体材料加热到第二热处理在此之后,温度为650℃以上或更高,750℃或更低。 C./min或更多。', 'JP2017521181', 1481817600, 'JP6213697B1', 1508256000, 1508256000, NULL, 1506614400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 26, 3, 0, 0, 0, NULL, NULL, NULL, '2015251677 | 2016036272', 'JP | JP', 1450886400, 9, 9, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '池田 安希子', NULL, 'JP1985255941A | JP2009302262A | WO2012161355A1 | WO2013008756A1 | WO2015030231A1', NULL, NULL, 1, '\\20220510\\77321e43000747f0bea3cab99288665b.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 40137, 40139, 40138, 9);
INSERT INTO `os_patent` VALUES (23487, 'Method for manufacturing R-T-B based sintered magnet', 'R-T-B系烧结磁铁的制造方法', 'US10242781B2', 'A method for manufacturing an R-T-B based sintered magnet includes: 1) a step of preparing an R-T-B based sintered magnet material by sintering a molded body at a temperature of 1,000° C. or higher and 1,100° C. or lower, and then performing (a) temperature dropping to 500° C. at 10° C./min or less, or (b) temperature dropping to 500° C. at 10° C./min or less after performing a first heat treatment of holding at a first heat treatment temperature of 800° C. or higher and 950° C. or lower, the R-T-B based sintered magnet material satisfying compositional requirements; and 2) a heat treatment step of performing a second heat treatment by heating the R-T-B based sintered magnet material to a second heat treatment temperature of 650° C. or higher and 750° C. or lower, and then cooling the R-T-B based sintered magnet material to 400° C. at 5° C./min or more.', '制造RTB基烧结磁体的方法包括：1）通过在1000℃或更高和1100℃或更低的温度下烧结成型体来制备RTB基烧结磁体材料的步骤，然后进行（ a）温度以10℃/分钟或更低的速率下降至500℃，或（b）在第一次保持的第一热处理之后以10℃/分钟或更低的温度下降至500℃的温度热处理温度为800℃以上且950℃以下，RTB系烧结磁铁材料满足组成要求; 2）通过将RTB基烧结磁体材料加热至650℃或更高且750℃或更低的第二热处理温度，然后冷却RTB基烧结磁体，进行第二热处理的热处理步骤材料在5℃/ min或更高温度下达到400℃。', 'US15/565435', 1481817600, 'US10242781B2', 1553529600, 1525881600, NULL, 1553529600, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 19, 3, 0, 0, 0, NULL, NULL, NULL, '2015251677 | 2016036272', 'JP | JP', 1450886400, 9, 9, NULL, NULL, 15, 0, 0, 0, 3, NULL, '870', NULL, 'WALKER, KEITH', 'HEVEY, JOHN A', 'EP2226137A1 | JP1985255941A | JP2009302262A | US20020054824A1 | US20100230013A1 | US20140132377A1 | US20140184370A1 | US20140375404A1 | US20160284468A1 | US20170025207A1 | US9177705B2 | WO2012161355A1 | WO2013008756A1 | WO2013108830A1 | WO2015030231A1', NULL, 'Communication dated May 24, 2018, issued by the German Patent Office in counterpart German Application No. 112016001090.7. cited by applicant. | International Search Report of PCT/JP2016/087561 dated Feb. 28, 2017. cited by applicant | Written Opinion of the International Searching Authority of PCT/JP2016/087561 dated Feb. 28, 2017. cited by applicant', 1, '\\20220510\\846533e5c09f437ca654108407527bab.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40137, 40139, 40138, 9);
INSERT INTO `os_patent` VALUES (23488, 'R-T-B系焼結磁石の製造方法', 'r-t-b系烧结磁铁的制造方法', 'JP6733533B2', '【課題】R-T-B系焼結磁石にRHを拡散させるための拡散源として、コストダウンとHcJ向上効果を両立したRH拡散源を用いてR-T-B系焼結磁石を製造する。\n\n【解決手段】本開示のR-T-B系焼結磁石の製造方法は、R-T-B系焼結磁石を用意する工程と、前記R-T-B系焼結磁石の表面にRLM1M2合金(RLは、Nd、Prから選ばれる1種以上、M1、M2はCu、Fe、Ga、Co、Ni、Alから選ばれる1種以上、M1=M2でもよい)の粉末と、RHフッ化物(RHはDyおよび/またはTb)の粉末とR-T-B系磁石のリサイクル工程によって製造されたRH化合物の粉末の混合粉末とを存在させた状態において、前記R-T-B系焼結磁石の焼結温度以下で熱処理を行う工程とを含む。\n\n【選択図】なし', 'A作为采用成本和H  cJ的 RH扩散源扩散RH在RTB系烧结磁铁，以产生一个RTB系烧结磁铁的扩散源，其平衡改进。一种用于制造本公开的一个RTB系烧结磁铁的方法包括RTB系烧结磁铁，钕的表面上提供一个RTB系烧结磁铁，RLM1M2合金（RL的步骤，选自Pr 1中选择M1和M2可以是选自Cu，Fe，Ga，Co，Ni和Al中的一种或多种，​​M1 = M2），RH氟化物的粉末（RH是Dy和/或Tb） RTB系统磁体以及在通过石材再循环步骤生产的RH化合物粉末的混合粉末存在下，在等于或低于R-T-B系烧结磁体的烧结温度下进行热处理的步骤。', 'JP2016243999', 1481817600, 'JP6733533B2', 1596556800, 1529510400, NULL, 1594569600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 12, 0, 0, 0, 0, NULL, NULL, NULL, '井上 健一', NULL, 'JP1987083317A | JP1989183415A | JP2008270699A | JP2009259957A | JP2012167345A | JP2014051718A | US20160032419A1 | WO2006043348A1 | WO2006064848A1 | WO2015122422A1 | WO2015163397A1 | WO2016039352A1', NULL, NULL, 1, '\\20220510\\9256e1f10df14631993b2b5f9fbb0d3e.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 40140, 40142, 40141, 2);
INSERT INTO `os_patent` VALUES (23489, 'Verfahren zum Herstellen eines R-T-B-basierten Sintermagneten', 'R-T-B基烧结磁体的制造方法', 'DE112016001090B4', 'Verfahren zum Herstellen eines R-T-B-basierten Sintermagneten, welches beinhaltet: \n\n1) einen Schritt des Herstellens eines R-T-B-basierten Sintermagnetmaterials durch Sintern eines Formkörpers bei einer Temperatur von 1000 °C bis 1100 °C, und dann Ausführen von: \n\nTemperaturabsenkung auf 500 °C mit 10°C/min oder weniger, wobei das R-T-B-basierte Sintermagnetmaterial beinhaltet: \n\n27,5 Masse% bis 34,0 Masse% von R (wobei R wenigstens ein Element der Seltenerdelemente ist und unbedingt Nd beinhaltet); \n\n0,85 Masse% bis 0,93 Masse% von B, \n\n0,20 Masse% bis 0,70 Masse% von Ga, \n\n0,05 Masse% bis 0,50 Masse% von Cu, und \n\n0,05 Masse% bis 0,50 Masse% von Al, mit dem Rest T (wobei T Fe und Co ist, und der Fe-Anteil 90 Masse% oder mehr von T ausmacht) und unvermeidliche Verunreinigungen, wobei das R-T-B-basierte Sintermagnetmaterial die folgenden Ungleichungen (1) und (2) erfüllt: \n\n \n\n  \n\n   \n\n   \n\n    [\n\n    \n\n   \n\n    T\n\n    \n\n   \n\n    ]\n\n    \n\n   \n\n  \n\n   −\n\n   \n\n  \n\n   72,3\n\n   \n\n   \n\n   \n\n    [\n\n    \n\n   \n\n    B\n\n    \n\n   \n\n    ]\n\n    \n\n   \n\n  \n\n   >\n\n   \n\n  \n\n   0\n\n   \n\n  \n\n\n\n \n\n \n\n  \n\n   \n\n    \n\n     \n\n     \n\n      (\n\n      \n\n      \n\n       \n\n       \n\n        [\n\n        \n\n       \n\n        T\n\n        \n\n       \n\n        ]\n\n        \n\n       \n\n      \n\n       −\n\n       \n\n      \n\n       72,3\n\n       \n\n       \n\n       \n\n        [\n\n        \n\n       \n\n        B\n\n        \n\n       \n\n        ]\n\n        \n\n       \n\n      \n\n     \n\n      )\n\n      \n\n     \n\n    \n\n   \n\n    /\n\n    \n\n    \n\n    \n\n     55,85\n\n     \n\n    \n\n   \n\n  \n\n    \n\n  \n\n   13\n\n   \n\n   \n\n    \n\n     \n\n     \n\n      [\n\n      \n\n      \n\n      \n\n       Ga\n\n       \n\n      \n\n     \n\n      ]\n\n      \n\n     \n\n    \n\n   \n\n    /\n\n    \n\n    \n\n    \n\n     69,72\n\n     \n\n    \n\n   \n\n  \n\n\n\n \n\nwobei [T] der Gehalt an T in Masse% ist, [B] der Gehalt an B in Masse% ist, und [Ga] der Gehalt an Ga in Masse% ist; und \n\n2) einen Wärmebehandlungsschritt des Durchführens einer Wärmebehandlung durch Erhitzen des R-T-B-basierten Sintermagnetmaterials auf eine Wärmebehandlungstemperatur von 650 °C bis 750 °C für 5 bis 500 Minuten, und dann Abkühlen des R-T-B-basierten Sintermagnetmaterials mit 5 °C/min oder mehr auf 400 °C.', '制造含有的R-T-B基烧结磁体的方法:\n\n1)通过在1000℃至1100℃的温度下烧结模塑体,然后执行:\n\n温度降低至500℃,10°C / min或更小,其中R-T-B基烧结磁性材料包括:\n\n27.5质量%至34.0质量%的R(其中R是稀土元素的至少一个元素,必然包括ND);\n\n0.85%重量为B的0.93质量%,\n\n0.20质量%至0.70质量%GA,\n\n0.05质量%至0.50质量%的Cu,和\n\n0.05重量%至0.50质量%的Al,剩余的T(其中T Fe和Co是T Fe和Co,以及基本上)和不可避免的杂质的Fe组分90或更多的杂质,其中RTB的烧结磁性材料遵循不等式(1)和(2)履行:\n\n  \n\n     \n\n       \n\n        \n\n [    \n\n        \n\n        \n\n T    \n\n        \n\n        \n\n ]    \n\n        \n\n      \n\n      \n\n −   \n\n      \n\n      \n\n 72,3   \n\n      \n\n       \n\n        \n\n [    \n\n        \n\n        \n\n B    \n\n        \n\n        \n\n ]    \n\n        \n\n      \n\n      \n\n >   \n\n      \n\n      \n\n 0   \n\n      \n\n    \n\n\n\n\n\n  \n\n     \n\n       \n\n         \n\n           \n\n            \n\n (      \n\n            \n\n             \n\n               \n\n                \n\n [        \n\n                \n\n                \n\n T        \n\n                \n\n                \n\n ]        \n\n                \n\n              \n\n              \n\n −       \n\n              \n\n              \n\n 72,3       \n\n              \n\n               \n\n                \n\n [        \n\n                \n\n                \n\n B        \n\n                \n\n                \n\n ]        \n\n                \n\n              \n\n            \n\n            \n\n )      \n\n            \n\n          \n\n        \n\n        \n\n /    \n\n        \n\n         \n\n          \n\n 55,85     \n\n          \n\n        \n\n      \n\n      \n\n    \n\n      \n\n 13   \n\n      \n\n       \n\n         \n\n           \n\n            \n\n [      \n\n            \n\n             \n\n              \n\n Ga       \n\n              \n\n            \n\n            \n\n ]      \n\n            \n\n          \n\n        \n\n        \n\n /    \n\n        \n\n         \n\n          \n\n 69,72     \n\n          \n\n        \n\n      \n\n    \n\n\n\n\n\n其中[t]的含量为t质量%,[b]是质量%的b的含量,[ga]是质量%的Ga的含量;和\n\n2)热处理步骤通过将RTB的烧结磁性材料加热到650℃至750℃的热处理温度5至500分钟,然后冷却基于RTB的烧结磁性材料5°C / min或更大至400°C.', 'DE112016001090', 1481817600, 'DE112016001090B4', 1612368000, 1518019200, NULL, 1612368000, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B4', NULL, NULL, 27, 3, 0, 0, 0, NULL, NULL, NULL, '2015251677 | 2016036272', 'JP | JP', 1450886400, 9, 9, NULL, NULL, 2, 0, 0, 0, 0, NULL, '895', NULL, NULL, NULL, 'EP2226137A1 | US20020054824A1', NULL, NULL, 1, '\\20220510\\3a588a7d170a43559bb6c95ad2246019.png', NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 40137, 40139, 40138, 9);
INSERT INTO `os_patent` VALUES (23490, 'R-T-B系焼結磁石の製造方法', '制造R-T-B基烧结磁体的方法', 'JP6840353B2', '【課題】R-T-B系焼結磁石に重希土類元素RHを拡散させてHcJを向上させるために重希土類元素RHを含む粉末粒子の層をR-T-B系焼結磁石の表面に均一に無駄なく効率的に塗布する。\n\n【解決手段】R-T-B系焼結磁石100の製造方法は、R-T-B系焼結磁石(Rは希土類元素、TはFeまたはFeとCo)を用意する工程と、希土類元素Rの合金または化合物の粉末から形成した拡散源粉末30を用意する工程と、焼結磁石の表面の塗布領域に糖アルコール類を含有する粘着剤を塗布する塗布工程と、粘着剤を塗布した焼結磁石の表面の塗布領域に拡散源粉末30を付着させる付着工程と、拡散源粉末30が付着した焼結磁石を、焼結磁石の焼結温度以下の温度で熱処理して拡散源粉末30に含まれる元素の一部または全部を焼結磁石の表面から内部に拡散する拡散工程とを含む。\n\n【選択図】図1C', '阿通过在RTB系烧结磁铁扩散的重稀土类元素RHħ cJ的粉末颗粒，包括重稀土类元素RH在为了提高RTB系烧结磁铁的表面的层有效涂抹，无异味。\n\n一种用于制造RTB系烧结磁铁100的方法，该RTB系烧结磁铁（R为稀土类元素，T是Fe或者Fe和Co）制备，由合金或稀土类元素R的化合物的粉末制备扩散源粉末30形成的，涂布含有在烧结磁铁的表面的涂层面积的糖醇的粘接剂的涂布工序中，涂有粘合剂的烧结磁铁的表面的涂层面积沉积扩散源粉末30，扩散源的烧结磁铁粉末30的沉积步骤被粘附，在温度的一些或全部包含在所述扩散源粉末30中的元素的进行热处理等于或低于烧结磁体的烧结温度并将烧结磁铁从表面扩散到内部。\n\n背景技术', 'JP2016246328', 1482163200, 'JP6840353B2', 1615305600, 1530115200, NULL, 1613664000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 12, 0, 0, 0, 0, NULL, NULL, NULL, '井上 健一', NULL, 'JP1973033973A | JP1987149776A | JP1998110149A | JP2007123748A | JP2008263179A | JP2012234971A | JP2012248827A | JP2012248828A | US20090252865A1 | WO2006043348A1 | WO2008032426A1 | WO2015163397A1', NULL, NULL, 1, '\\20220510\\855afd624ceb4933b24d174ad50cd766.png', NULL, NULL, 2, NULL, NULL, 11, NULL, NULL, NULL, 40143, 40145, 40144, 2);
INSERT INTO `os_patent` VALUES (23491, 'R-T-B系焼結磁石', 'r-t-b系统烧结磁铁', 'JP6702215B2', '【課題】Dy等のRHをできるだけ使用することなく(すなわち、RHの使用量をできるだけ低減して)、高いBrと高いHcJを有するR-T-B系焼結磁石を提供する。\n\n【解決手段】質量%で、R:27.5%以上34.0%以下(Rは、希土類元素のうち少なくとも一種でありNdおよびPrの少なくとも一方を必ず含む)、B:0.85%以上0.93%以下、Ga:0.20%以上0.75%以下、Sn:0.05%以上0.60%以下、Cu:0.05%以上0.70%以下、Al:0.05%以上0.40%以下、およびT:61.5%以上(Tは、FeとCoであり、質量比でTの90%以上がFeである)を含み、下記式(1)〜(4)を満足するR-T-B系焼結磁石である。\n\n0<[T]-72.3×[B] (1)\n\n0.2≦[Cu]/([Ga]+[Cu])≦0.5 (2)\n\n0.5≦[Ga]/[Sn] (3)\n\n0.25≦[Ga]+[Sn]≦0.80 (4)\n\n【選択図】なし', '解决的问题：提供一种具有高B[R和高H J 的R-T-B基烧结磁体，而没有尽可能多地使用Dy等RH（即，尽可能减少了RH的使用量）。\n\n 解决方案：以质量％计，R：27.5％以上且34.0％以下（R是至少一种稀土元素，并且始终包含Nd和Pr中的至少一种），B：0.85％以上且0.93％以下，Ga：  0.20％以上且0.75％以下，Sn：0.05％以上且0.60％以下，Cu：0.05％以上且0.70％以下，Al：0.05％以上且0.40％以下，T：61.5％以上（T为Fe和Co，  RTB系烧结磁铁的质量比为Fe，含有90％以上的T，满足下式（1）〜（4）。\n\n 0 <[T] -72.3×[B]（1）\n\n 0.2≤[Cu] /（[Ga] + [Cu]）≤0.5（2）\n\n 0.5≦[Ga] / [Sn]（3）\n\n 0.25≤[Ga] + [Sn]≤0.80（4）\n\n [选择图]无', 'JP2017017213', 1485964800, 'JP6702215B2', 1590508800, 1533744000, NULL, 1589126400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '秋山 直人', NULL, 'JP2002064010A | JP2012212808A | JP2014132628A | JP2015119132A | US20160307676A1 | WO2013008756A1 | WO2016153057A1', NULL, NULL, 1, '\\20220510\\27f324b387d14ea6a6afd05b7519e7f3.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 40146, 40148, 40147, 4);
INSERT INTO `os_patent` VALUES (23492, '希土類元素溶液を調製する方法', '制备稀土元素溶液的方法', 'JP6841082B2', 'PROBLEM TO BE SOLVED: To prepare a method for preparing a rare earth element solution allowing for reduction in an amount of an organic solvent to be used, downsizing of an apparatus, and reduction in a workload of processing in separating a light rare earth element from a heavy rare earth element by solvent extraction.SOLUTION: The method for preparing a rare earth element solution comprises the steps of: (1) obtaining a mixture of a compound oxide or an oxide of a light rare earth element and a heavy rare earth element from a processing object including both elements; (2) dissolving the obtained mixture of the compound oxide or the oxide in hydrochloric acid and/or nitric acid; (3) obtaining a precipitate by adding a precipitant to the obtained solution; (4) burning the obtained precipitate; (5) adding the obtained burned product in an amount of 1.5 or more times its solubility to a mixed acid of at least one inorganic acid selected from hydrochloric acid and nitric acid of a concentration of 0.7 mol/L or more and at least one organic acid selected from acetic acid, citric acid, lactic acid, acetylacetone acid, and α-hydroxyisobutyric acid thereby obtaining a rich solution of the light rare earth element and a rich residue of the heavy rare earth element; and (6) separating the obtained solution from the residue.SELECTED DRAWING: Figure 1', '要解决的问题:制备制备稀土元素溶液的方法,允许使用待使用的有机溶剂的量,减小装置的减少,以及在分离光稀土元素的处理中的工作量的减少溶剂萃取的重稀土元素。溶液:制备稀土元素溶液的方法包括以下步骤:(1)获得氧化物或稀土元素和重稀土元素的复合氧化物或氧化物的混合物来自包括两个元素的处理对象; (2)将所得复合氧化物或氧化物中的化合物和/或硝酸的混合物溶解; (3)通过向所得溶液中加入沉淀剂获得沉淀物; (4)燃烧获得的沉淀物; (5)将所得燃烧的产物加入1.5或更多次的溶解度,其溶解与选自盐酸和浓度为0.7mol / L或更高的浓度,至少一种有机物由乙酸,柠檬酸,乳酸,乙酰丙酮酸和α-羟基异丁酸酯选择的酸,从而获得富稀土元素的丰富溶液和重质稀土元素的富含残留物; (6)将所得溶液从残留物中分离。选择图:图1', 'JP2017034201', 1487865600, 'JP6841082B2', 1615305600, 1536768000, NULL, 1613923200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '祢屋 健太郎', NULL, 'JP1990080530A | JP1997157769A | JP2014051449A | JP2014101577A | WO2013018710A1', NULL, NULL, 1, '\\20220510\\153896b5dd3544638cba79698cdb4f0d.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 40149, 40151, 40150, 2);
INSERT INTO `os_patent` VALUES (23493, 'R-T-B系焼結磁石の製造方法', 'r-t-b烧结磁体的制造方法', 'JP6717231B2', 'PROBLEM TO BE SOLVED: To provide an R-T-B based sintered magnet which is increased in intrinsic coercive force and corrosion resistance.SOLUTION: A method for manufacturing an R-T-B based sintered magnet comprises the steps of: preparing an R-T-B based sintered magnet; and performing a thermal treatment at a sintering temperature or below in a state in which powder of RLRHM1 alloy (RL represents Nd and/or Pr, RH represents Dy and/or Tb, M1 represents one or more kinds selected from Al, Cu, Fe, Ga, Co, Ni and Zn) and powder of M2 compound (M2 represents one or more kinds selected from Al, Li, Fe and Cu, and the M2 compound is M2 fluoride and/or M2 oxide) are present on the surface of the magnet. The alloy includes RL+RH at 50 atom% or more to a whole amount thereof, and M1 at 10 atom% or more, provided that the atomic ratio of RL and RH is given by RL:RH=96:4-10:90. The alloy has a melting point equal to or below the temperature of the thermal treatment. The thermal treatment is performed in a state in which the alloy powder and the M2 compound powder are present on the surface of the magnet at a mass ratio given by Alloy:M2 compound=97:3-80:20.SELECTED DRAWING: None', '解决的问题:提供一种提高固有矫顽力和耐腐蚀性的基于R-T-B的烧结磁体。解决方案:一种制造基于R-T-B的烧结磁体的方法,包括以下步骤:准备基于R-T-B的烧结磁体; 然后,在RLRHM1合金的粉末(RL为Nd和/或Pr,RH为Dy和/或Tb,M1为选自Al,Cu,Fe中的一种以上的状态)的状态下,在烧结温度以下进行热处理。  ,Ga,Co,Ni和Zn)和M2化合物的粉末(M2代表选自Al,Li,Fe和Cu中的一种或多种,​​M2化合物为M2氟化物和/或M2氧化物)存在于金属表面。 磁铁。 只要RL和RH的原子比为RL:RH = 96:4-10:90,则合金的全部含有RL + RH为50原子%以上,M1为10原子%以上。  。 该合金的熔点等于或低于热处理温度。 以合金:M2化合物= 97:3-80:20给出的质量比将合金粉末和M2化合物粉末存在于磁体表面的状态下进行热处理。', 'JP2017036527', 1488211200, 'JP6717231B2', 1593532800, 1536768000, NULL, 1592150400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '秋山 直人', NULL, 'JP2008263179A | JP2010098115A | JP2011014668A | JP2011082467A | JP2013042152A | JP2013105903A | JP2015050427A', NULL, NULL, 1, '\\20220510\\b0404790ac914b3dafcd76a92c7a3647.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 40152, 40154, 40153, 2);
INSERT INTO `os_patent` VALUES (23494, 'R-T-B系焼結磁石の製造方法', 'r-t-b系烧结磁铁的制造方法', 'JP6717230B2', '【課題】より大きく保持力を向上させることができる、R-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】R-T-B系焼結磁石を用意する工程と、R-T-B系焼結磁石の表面にRLRHM合金(RLはNdおよび/またはPr、RHはDyおよび/またはTb、MはAl、Cu、Fe、Ga、Co、Ni、Znからなる群から選ばれる1種以上)の粉末と、Alフッ化物および/またはAl酸化物の粉末とを存在させた状態において、R-T-B系焼結磁石の焼結温度以下で熱処理を行う工程とを含む。RLRHM合金は、RL+RHを50原子%以上、Mを10原子%以上、かつ、RL:RH=96:4〜10:90の原子比で含み、融点は熱処理の温度以下である。熱処理は、RLRHM合金の粉末とAlフッ化物および/またはAl酸化物の粉末とが、RL:Al化合物=82:18〜75:25の質量比で焼結磁石の表面に存在する状態で行われる。\n\n【選択図】なし', '要解决的问题：提供一种R-T-B基烧结磁体的制造方法，可以进一步提高保持力。制备RTB基烧结磁体的步骤，在RTB基烧结磁体的表面上形成RLRHM合金的步骤（RL是Nd和/或Pr，RH是Dy和/或Tb，M是Al，Cu，Fe，存在至少一种选自Ga，Co，Ni和Zn的粉末和Al氟化物和/或Al氧化物的粉末，RTB基烧结磁体的烧结温度在与进行热处理的工序。RLRHM合金含有原子比为50原子％以上的RL + RH，M原子数10原子％以上，RL：RH = 96：4~10：90，熔点低于热处理温度。在RL：Al化合物= 82:18至75:25的质量比下，RLRHM合金粉末和Al氟化物和/或Al氧化物粉末存在于烧结磁体表面上的状态下进行热处理。 。', 'JP2017036526', 1488211200, 'JP6717230B2', 1593532800, 1536768000, NULL, 1592150400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 10, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '秋山 直人', NULL, 'JP2010098115A | JP2011082467A | JP2013042152A | JP2013105903A | JP2015050427A | WO2006043348A1 | WO2015163397A1', NULL, NULL, 1, '\\20220510\\8322720cfaeb4a19bc7eff6e54d8f0b6.png', NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 40155, 40157, 40156, 2);
INSERT INTO `os_patent` VALUES (23495, 'R-T-B系焼結磁石の製造方法', 'R-t-b型烧结磁体的制造方法', 'JP6798546B2', 'Provided is a method for manufacturing an R-T-B based sintered magnet that contains 28.5-33.0 mass% of R (R represents at least one type of rare-earth element, and includes Nd and/or Pr), 0.850-0.910 mass% of B, 0.2-0.7 mass% of Ga, 0.05-0.50 mass% of Cu, and 0.05-0.50 mass% of Al with the remainder being T (T represents Fe and Co, and at least 90 mass% of T is accounted for by Fe) and unavoidable impurities, and that satisfies formula (1) (14[B]/10.8<[T]/55.85, where [B] represents the contained amount of B in mass%, and [T] represents the contained amount of T in mass%), the method comprising: a step for preparing an alloy powder in which the particle size D50 and the particle size D99 satisfy formula (2) (3.8 μm ≤ D50 ≤ 5.5 μm) and formula (3) (D99 ≤ 10 μm), respectively; a forming step for obtaining a compact by compressing the alloy powder; a sintering step for obtaining a sintered body by sintering the compact; and a heat treatment step for applying heat treatment to the sintered body.', '本发明提供一种RTB系烧结磁铁的制造方法,该RTB系烧结磁铁含有28.5〜33.0质量%的R(R表示稀土元素中的至少一种,并且含有Nd和/或Pr),B为0.850〜0.910质量%, Ga为0.2〜0.7质量%,Cu为0.05〜0.50质量%,Al为0.05〜0.50质量%,其余为T(T表示Fe和Co,Fe占至少90质量%)和不可避免的杂质,并且满足公式(1)(14 [B] /10.8<[T] /55.85,其中[B]表示质量百分比中B的含量,[T]表示质量百分比中T的含量),该方法包括:制备合金粉末的步骤,其中粒径D50和粒径D99分别满足式(2)(3.8μm≤D50≤5.5μm)和式(3)(D99≤10μm)。成型步骤,用于通过压缩合金粉末获得压块;烧结步骤,用于通过烧结成型体而获得烧结体;热处理工序是对烧结体实施热处理的工序。', 'JP2018505902', 1489075200, 'JP6798546B2', 1607443200, 1548259200, NULL, 1606147200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 3, 0, 0, 0, NULL, NULL, NULL, '2016054153', 'JP', 1458144000, 5, 5, NULL, NULL, 3, 0, 0, 0, 0, NULL, NULL, NULL, '鈴木 孝章', NULL, 'JP2004303909A | WO2013008756A1 | WO2015147053A1', NULL, NULL, 1, '\\20220510\\ced898dd1e464941aa1b89e2256f5071.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 40158, 40160, 40159, 5);
INSERT INTO `os_patent` VALUES (23496, 'R-T-B系焼結磁石の製造方法', 'r-t-b系烧结磁体的制造方法', 'JP6760160B2', '【課題】高い保磁力HcJを有するR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】Nd、Prの少なくとも1種を含む希土類元素:28.5〜33.5質量%、B:0.84〜0.92質量%、Ga:0.3〜0.7質量%、Cu:0.05〜0.35質量%、Al:0.02〜0.50質量%、Fe+Co:61.0質量%以上を含み、式:14[B]/10.8<[Fe+Co]/55.85を満足するR-T-B系焼結磁石の製造方法であって、1種以上のR-Ga合金を水素雰囲気で200℃以上450℃以下の温度に加熱して、水素吸蔵R-Ga合金を得、これに1種以上の主合金を混合し、さらに成形、焼結、熱処理を施す工程を含み、混合合金粉末を得る工程において、水素吸蔵R-Ga合金は水素を吸蔵している状態で粉砕され、混合合金粉末の質量に対するR-Ga合金粉末の質量の比が、1〜5%である、R-T-B系焼結磁石の製造方法。\n\n【選択図】図1A', '要解决的问题：提供一种具有高矫顽力H_cJ_的R-T-B基烧结磁体的制造方法。\n\n包含Nd和Pr中的至少一种的稀土元素：28.5〜33.5质量％，B：0.84〜0.9质量％，Ga：0.3〜0.7质量％，Cu：0.05〜0.35质量％，Al：0.50质量％，Fe + Co：61.0质量％以上，并且具有式14 [B] /10.8 &lt;[Fe + Co] / 55。85，其中在氢气氛中将一种或多种R-Ga合金加热至200℃或更高且450℃或更低的温度以获得吸氢的R-Ga合金，烧结和热处理，并且在获得混合合金粉末的步骤中，吸氢的R-Ga合金在吸氢的状态下被粉碎，R-Ga合金粉末的质量相对于混合合金粉末的质量的比例为1〜5％制造方法。', 'JP2017054790', 1490025600, 'JP6760160B2', 1600790400, 1523462400, NULL, 1599408000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 28, 4, 0, 0, 0, NULL, NULL, NULL, '2016066158 | 2016189972', 'JP | JP', 1459180800, 2, 2, NULL, NULL, 3, 0, 0, 0, 0, NULL, NULL, NULL, '鈴木 孝章', NULL, 'JP1995176414A | WO2013008756A1 | WO2015020182A1', NULL, NULL, 1, '\\20220510\\9937780305314b92a5ad39f60275c42c.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40161, 40163, 40162, 2);
INSERT INTO `os_patent` VALUES (23497, 'R-T-B系焼結磁石', 'r-t-b系统烧结磁铁', 'JP6750543B2', 'PROBLEM TO BE SOLVED: To provide an R1-T1-X1 based sintered magnet having a coercive force increased not only in the vicinity of a magnet surface, but also in a magnet, of which the effect of coercive force increase is never marred by surface grinding for magnet size adjustment.SOLUTION: An R1-T1-X1 based sintered magnet comprises: R1 of 27 mass% or more and 35 mass% or less (where R1 is at least one of rare earth elements); X1 of 0.85 mass% or more and 0.93 mass% or less (where X1 is at least one of B and C, which necessarily includes B); and T1 of 61.5 mass% or more (where T1 is Fe, or Fe and M, and M is one or more kinds selected from Ga, Al, Si, Ti, V, Cr, Mn, Co, Ni, Cu, Zn, Ge, Zr, Nb, Mo and Ag). In the R1-T1-X1 based sintered magnet, the molar ratio [T1]/[X1] is 13.0 or more. The sintered magnet further comprises Pr, Zn and an R2-T2-A compound. Typically, the R2-T2-A compound has a LaCoGatype crystal structure.SELECTED DRAWING: None', '解决的问题:提供一种基于R1-T1-X1的烧结磁体,其不仅在磁体表面附近而且在磁体中都具有增加的矫顽力,而该矫顽力增加的效果不会被表面破坏 解决方案:一种基于R1-T1-X1的烧结磁体,其特征在于:R1为27质量%以上且35质量%以下(其中R1为稀土元素中的至少一种);  X1为大于或等于0.85质量%且小于或等于0.93质量%(其中,X1为B和C中的至少一个,必须包括B); 并且T1为61.5质量%以上(其中,T1为Fe,Fe和M,M为选自Ga,Al,Si,Ti,V,Cr,Mn,Co,Ni,Cu,Zn中的一种以上,  Ge,Zr,Nb,Mo和Ag)。 在R1-T1-X1基烧结磁体中,摩尔比[T1] / [X1]为13.0以上。 所述烧结磁体还包含Pr,Zn和R2-T2-A化合物。 通常,R2-T2-A化合物具有LaCoGa型晶体结构。', 'JP2017058346', 1490284800, 'JP6750543B2', 1598976000, 1539187200, NULL, 1597593600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 22, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '秋山 直人', NULL, 'JP2012248827A | JP2014086529A | JP2015230978A | WO2008032667A1 | WO2012036294A1 | WO2016133071A1', NULL, NULL, 1, '\\20220510\\35e28991330f49818eccb0e4d98aba3d.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 40164, 40166, 40165, 2);
INSERT INTO `os_patent` VALUES (23498, 'DyとTbを含む合金から両者を分離する方法', '一种从含有Dy和Tb的合金中分离的方法', 'JP6179699B1', '本発明の課題は、溶媒抽出法を用いることなく、構成金属としてDyとTbを含む合金から両者を分離する方法を提供することである。その解決手段としての本発明の方法は、合金におけるDyとTbの組成をDyxTby(原子組成比)、熱処理温度をtとした場合、温度tにおけるDy単独の蒸気圧をPtDy(Pa)、温度tにおけるTb単独の蒸気圧をPtTb(Pa)として、式1:PtTbDy×(x/(x+y))を満たす圧力Pt(Pa)の雰囲気下で合金を熱処理することで、Dyを気化させることによることを特徴とする。', '本发明的目的是提供一种不使用溶剂提取方法而从含有Dy和Tb作为构成金属的合金中分离出的方法。 作为解决问题的手段的本发明的方法，合金中的Dy和Tb的组成为DyXTb ÿ（原子组成比），其中热处理温度为t，在温度t下单独的Dy的蒸气压为 Pt 镝（Pa），温度t时仅Tb的蒸气压为Pt b（Pa），等式1：Pt b  其特征在于，通过在压力Pt（Pa）满足Dy×（x /（x + y））的气氛中对合金进行热处理来使Dy汽化。', 'JP2017523000', 1490544000, 'JP6179699B1', 1502812800, 1502812800, NULL, 1501171200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, '2016064773', 'JP', 1459094400, 4, 10, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, '坂本 薫昭', NULL, 'JP1990080530A | JP2013087317A | JP2013139617A | WO2013018710A1', NULL, NULL, 1, '\\20220510\\d350384b31e644ab918e4aa01c973132.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 40167, 40169, 40168, 11);
INSERT INTO `os_patent` VALUES (23499, 'PHƯƠNG PHÁP TÁCH ĐYPROSI VÀ TEBI TỪ HỢP KIM CHỨA CHÚNG', '来自他们的容器的CYPROSI和TEBI的方法', 'VN61335A', 'Sáng chế đề cập đến phương pháp tách đyprosi (Dy) và tebi (Tb) từ hợp kim chứa Dy và Tb. Phương pháp này bao gồm bước làm bay hơi Dy bằng cách cho hợp kim qua xử lý nhiệt trong môi trường khí có áp suất Pt (Pa), mà khi thành phần Dy-Tb trong hợp kim này là DyxTby (tỷ lệ thành phần nguyên tử) và nhiệt độ xử lý nhiệt là t, thoả mãn công thức 1: PtTb', '本发明涉及从含有Dy和Tb的合金中分离乙基（Dy）和特比（Tb）的方法。该方法包括在Pt（Pa）的压力气氛中通过合金化热处理的蒸发步骤Dy，其中当该合金中的Dy-Tb组分为DyxTby时（原料成分的比例）热处理温度为t，满足公式1：PtTb', 'VN1201804759', 1490544000, 'VN61335A', 1548345600, 1548345600, NULL, NULL, '越南', NULL, NULL, NULL, NULL, 8, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 25, 1, 0, 0, 0, NULL, NULL, NULL, '2016064773', 'JP', 1459094400, 6, 10, NULL, NULL, 0, 0, 0, 0, 0, NULL, '897', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 40170, 40169, 40168, 11);
INSERT INTO `os_patent` VALUES (23500, 'R-T-B系焼結磁石の製造方法', 'r-t-b系烧结磁体的制造方法', 'JP6760169B2', '【課題】磁石表面から重希土類元素RHを内部に拡散させる熱処理後におけるR-T-B系焼結磁石の表面に不要な凹凸が形成しない製造方法を提供する。\n\n【解決手段】本開示のR-T-B系焼結磁石の製造方法は、重希土類元素RHの合金または化合物の粉末を含む粒度調整粉末を用意する工程と、M酸化物(Mは、Mg、Al、Si、Ti、Cr、Mn、Fe、Co、Zrからなる群から選ばれる1種以上)の粉末を用意する工程と、焼結磁石の表面の塗布領域に粘着剤を塗布する塗布工程と、焼結磁石の表面の前記塗布領域に粒度調整粉末を付着させる工程と、M酸化物の粉末を粒度調整粉末と共に焼結磁石の表面に存在させる工程と、焼結磁石の焼結温度以下の温度で熱処理して、粒度調整粉末に含まれる重希土類元素RHを焼結磁石の表面から内部に拡散する拡散工程とを含む。\n\n【選択図】図1C', '提供一种制造方法，其不构成的R-T-B系烧结磁铁的表面上不必要的凹凸后的热处理，以从磁体表面稀土类元素RH内部扩散。一种用于制造本公开的一个RTB系烧结磁铁方法包括：提供包含所述重稀土类元素的合金或化合物的粉末的粒度调整粉末的步骤RH，M的氧化物（M是镁，铝，硅，钛，铬，锰，涂层铁，钴的涂覆步骤，制备一种或多种的粉末从由Zr组成的组中）时，烧结磁铁的表面的压敏粘合剂涂覆区域，烧结将晶粒尺寸调整到磁铁表面的涂层区域使M氧化物粉末与粒度调节粉末一起存在于烧结磁体表面上并在等于或低于烧结磁体的烧结温度的温度下进行热处理以使重稀土元素RH的步骤以及从烧结磁铁表面向内部扩散的扩散步骤。', 'JP2017060699', 1490544000, 'JP6760169B2', 1600790400, 1539792000, NULL, 1599408000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 17, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '秋山 直人', NULL, 'JP1990071872A | JP2016129217A | JPWO2008032426A1 | JPWO2010073533A1 | WO2006043348A1 | WO2015163397A1 | WO2017018252A1', NULL, NULL, 1, '\\20220510\\0f5ddfd1e9384936a2f6eb3e3d411caf.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40171, 40173, 40172, 2);
INSERT INTO `os_patent` VALUES (23501, 'Method for separating dy and tb from alloy containing both', '从含有两者的合金中分离dy和tb的方法', 'EP3438297B1', 'An object of the present invention is to provide a method for separating Dy and Tb from an alloy containing Dy and Tb as constitutional metals without using a solvent extraction method. The method of the present invention as a means for resolution is characterized by comprising vaporizing Dy by subjecting the alloy to a heat treatment in an atmosphere of a pressure Pt(Pa) that, when a Dy-Tb composition in the alloy is DyxTby (atomic composition ratio) and a heat treatment temperature is t, satisfies formula 1: PtTb < Pt < PtDy × (x/(x + y)), wherein PtDy is a vapor pressure (Pa) of Dy alone at the temperature t and PtTb is a vapor pressure (Pa) of Tb alone at the temperature t.', '本发明的一个目的是提供一种从含有Dy和Tb的合金中分离Dy和Tb作为组成金属而不使用溶剂萃取方法的方法。作为分辨手段的本发明方法的特征在于包括通过在合金中的Dy-Tb组合物为DyxTby（原子）的压力Pt（Pa）的气氛中对合金进行热处理来蒸发Dy。组成比）和热处理温度为t，满足式1：PtTb <Pt <PtDy×（x /（x + y）），其中PtDy是在温度t下单独的Dy的蒸气压（Pa），PtTb是在温度t下单独的Tb的蒸气压（Pa）。', 'EP2017774884', 1490544000, 'EP3438297B1', 1634659200, 1549382400, NULL, 1634659200, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 16, 1, 0, 0, 0, NULL, NULL, NULL, '2016064773', 'JP', 1459094400, 6, 10, NULL, NULL, 7, 0, 0, 0, 1, NULL, '874', NULL, NULL, NULL, 'CN1243168A | EP2952594A1 | JP2001303149A | JP2013087317A | JP2013139617A | JP2016000530A | WO2013018710A1', NULL, 'ABREU RENATA D ET AL: \"Study on separation of heavy rare earth elements by solvent extraction with organophosphorus acids and amine reagents\", MINERALS ENGINEERING, vol. 61, 2014, pages 82-87, XP028652616, ISSN: 0892-6875, DOI: 10.1016/J.MINENG.2014.03.015', 1, '\\20220510\\695cd73726844836a91496346c960fd5.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, '有效:DE,BE,LU,FR,MC,GB,IE,CH,LI | 失效:AT,NL | 未确认:RS,NO,FI,PT,BG,DK,LT,LV,HR,HU,SE,SI,SK,SM,MK,EE,MT,IS,IT,GR,AL,ES,CY,CZ,PL,RO,TR', 40170, 40169, 40168, 11);
INSERT INTO `os_patent` VALUES (23502, 'VERFAHREN ZUM TRENNEN VON DY UND TB AUS EINER LEGIERUNG DIE BEIDE ENTHÄLT', '从包含两者的合金中分离Dy和Tb的方法', 'DE602017047943T2', 'The present invention addresses the problem of providing a method for separating Dy and Tb from an alloy containing both as constituent metals without using a solvent extraction method. The method according to the present invention serving as a solution to the problem is characterized by: vaporizing Dy by subjecting an alloy, in which the composition of Dy and Tb is represented as DyxTby (atomic composition ratio), to a heat treatment in an atmosphere having a pressure level Pt(Pa) that satisfies PtTb<Pt<PtDy×(x/(x+y)) (formula 1), wherein: PtDy(Pa) represents the vapor pressure of Dy alone at temperature t which is the heat treatment temperature; and PtTb(Pa) represents the vapor pressure of Tb alone at temperature t.', '本发明解决了提供一种从含有两种作为构成金属的合金中分离Dy和Tb而不使用溶剂萃取方法的方法的问题。根据本发明的用作该问题的解决方案的方法的特征在于：通过对合金进行蒸发Dy，其中Dy和Tb的组成表示为DyxTby（原子组成比），在大气中进行热处理。具有满足PtTb <Pt <PtDy×（x /（x + y））（式1）的压力水平Pt（Pa），其中：PtDy（Pa）表示在温度t下单独的Dy的蒸气压力处理温度; PtTb（Pa）表示在温度t下单独的Tb的蒸气压。', 'DE602017047943', 1490544000, 'DE602017047943T2', 1634659200, 1634659200, NULL, 1634659200, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 25, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '855', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 40174, 40169, 40175, 11);
INSERT INTO `os_patent` VALUES (23503, 'Method for separating Dy and Tb from alloy containing both', '从含有两者的合金中分离镝和铽的方法', 'US11254998B2', 'An object of the present invention is to provide a method for separating Dy and Tb from an alloy containing Dy and Tb as constitutional metals without using a solvent extraction method. The method of the present invention as a means for resolution is characterized by comprising vaporizing Dy by subjecting the alloy to a heat treatment in an atmosphere of a pressure Pt(Pa) that, when a Dy—Tb composition in the alloy is DyxTby (atomic composition ratio) and a heat treatment temperature is t, satisfies formula 1: PtTbDy×(x/(x+y)), wherein PtDy is a vapor pressure (Pa) of Dy alone at the temperature t and PtTb is a vapor pressure (Pa) of Tb alone at the temperature t.', '本发明的一个目的是提供一种在不使用溶剂萃取方法的情况下将Dy和Tb分离为含有Dy和Tb的合金作为结构金属的方法。作为分辨率的本发明的方法的特征在于通过使合金经受压力Pt(PA)的气氛中的热处理来蒸发Dy,当合金中的Dy-Tb组合物是DyxTB.y (原子成分比)和热处理温度为T,满足式1:PTTbDy×(x /(x + y)),其中ptDy 是在温度T和PT的温度下单独达的蒸气压(PA)Tb 是Tb的蒸气压(PA)在温度下。', 'US16/084047', 1490544000, 'US11254998B2', 1645459200, 1600876800, NULL, 1645459200, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, '2016064773', 'JP', 1459094400, 4, 10, NULL, NULL, 9, 0, 0, 0, 8, NULL, '875', NULL, 'YANG, JIE', NULL, 'CN101506919A | CN104979917A | CN1243168A | EP2952594A1 | JP2013087317A | JP2013139617A | US5437709A', NULL, 'European Search Report for European Patent Application No. 17774884.5 dated Oct. 8, 2019 (5 sheets). | International Search Report for International Application No. PCT/JP2017/012292 dated Apr. 18, 2017 (2 Sheets). | NPL: on-line English translation of CN1243168A, Feb. 2000 (Year: 2000). | NPL: on-line translation of CN104979917A Oct. 2015 (Year: 2015). | Office Action of corresponding Chinese Patent Application No. 201780026665.1 dated Aug. 17, 2020 7 sheets, 7 sheets translation, 14 sheets total). | Office Action of corresponding Chinese Patent Application No. 201780026665.1 dated Mar. 1, 2021 (7 sheets). | R. Abreu, et al.; “Study on separation of heavy rare earth elements by solvent exli action with organophosphorus acids and amine reagents”; Minerals Engineering; vol. 61; 2014; pp. 82-87 (6 pages). | Xu, Guangxian; “Rare Earth Middle Book”; 2nd Edition; Beijing; Metallurgical Industry Press; Aug. 1995; pp. 59-63 (5 pages, 2 cover sheets, 	7 pages total).', 1, '\\20220510\\69ddf76eaa724655afe80e4d8f2757d1.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 40167, 40169, 40168, 11);
INSERT INTO `os_patent` VALUES (23504, '焼結体、その製造方法、プレス装置および樹脂モールドリング', '烧结体,制造方法相同,压制装置和树脂成型', 'JP6965609B2', '【課題】主磁束を発生させる位置が内径側および外径側のいずれであっても極異方性配向された焼結体を容易に作製でき加工歩留まりが良好となりかつ焼結体を得るまでの工程を少なくできる、焼結体の製造方法およびプレス装置、焼結体、ならびに樹脂モールドリングを提供する。\n\n【解決手段】プレス装置10は、ダイ12とともにキャビティ28を形成する下パンチ14と、上パンチ16と、ダイ12の両側面に設けられるヨーク18a,18bと、キャビティ28を挟む一対のコイル20とを備える。キャビティ28の断面形状は、第1弧部38a、第2弧部38b、第1側部38cおよび第2側部38dを含む円弧状であり、第2弧部38bよりも第1弧部38aの方がダイ12の側面に近く、キャビティ28は、ダイ12における第1方向の中央よりもいずれか一方のコイル20側に設けられ、発生する配向磁界が相互に逆極性となるように一対のコイル20に電流が流される。\n\n【選択図】図3', '要解决的问题：提供一种烧结体，其中即使产生主磁通的位置是内径侧或外径侧，也容易产生极性各向异性取向，从而提高加工产率并获得烧结体可以提供一种制造烧结体的方法，压制设备，烧结体和树脂模制环，其可以减少步骤数。\n\n的压榨装置10包括下冲头14与冲模12以形成空腔28，上冲头16，其设置在管芯12的两侧的磁轭部18a，和18b，一对线圈20夹持在空腔28的配备了。空腔28，第一圆弧部分38a，一第二圆弧部38b，的截面形状的圆弧状，其包括第一侧部38c和第二侧38D，比第一圆弧部38a的第二圆弧部38b它是靠近模具12的一侧，腔体28中的一下线圈20侧的任一第一方向上比在中心处设置模12，产生电流流过线圈对20，使得彼此相对的对准磁场具有彼此相反的极性。', 'JP2017137110', 1499875200, 'JP6965609B2', 1636473600, 1517414400, NULL, 1635091200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 25, 1, 0, 0, 0, NULL, NULL, NULL, '2016140295', 'JP', 1468512000, 4, 4, NULL, NULL, 11, 0, 0, 0, 0, NULL, NULL, NULL, '木下 直哉', NULL, 'JP1994061036A | JP1997330841A | JP2002191144A | JP2003299282A | JP2015211492A | JP2016072590A | JP2016122827A | US5019796A | WO2012090841A1 | WO2015186551A1', NULL, NULL, 1, '\\20220510\\c6c3c99c81264cff966ffbf403b164f7.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40176, 40178, 40177, 4);
INSERT INTO `os_patent` VALUES (23505, 'RFeB系磁石製造方法、RFeB系磁石及び粒界拡散処理用塗布物', 'RFeB磁体制造方法，RFeB磁体和用于晶界扩散处理的涂层材料', 'JP6484300B2', '【課題】保磁力が高いRFeB系磁石を提供する。\n\n【解決手段】本発明に係るRFeB系磁石は、希土類R、鉄Fe及びホウ素Bを含有するR2Fe14Bを主相とするRFeB系磁石であって、Tb及びDyの重量百分率をそれぞれx1、x2とし、室温における保磁力HcJをkOeの単位で表して、\n\n 01≦0.5、0≦x2であって、\n\n HcJ≧20.8×x1+2×x2+14.7\n\nの関係を満たすことを特徴とする。\n\n【選択図】図5', '提供具有高矫顽力的基于RFeB的磁体。\n\n根据本发明的基于RFeB的磁体是具有R2Fe 14 B的基于RFeB的磁体，其包含稀土R，铁Fe和硼B作为主相。 Tb和Dy的重量百分比为x1和x2的磁体，室温下的矫顽力HcJ为kOe以单位表示，\n\n 0  1   2 ，\n\n H c> 20.8 * x 1 + 2 * x 2 + 14.7\n\n为了满足这种关系\n\n[选中图]图5', 'JP2017139055', 1500307200, 'JP6484300B2', 1552406400, 1513785600, NULL, 1550764800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 3, 0, 0, 0, NULL, NULL, NULL, '2013055737', 'JP', 1363536000, 16, 16, NULL, NULL, 9, 0, 0, 0, 0, NULL, '863', NULL, '田中 崇大', NULL, 'JP1999329810A | JP2006019521A | JP2006303436A | JP2007258455A | JP2010114200A | JP2010263172A | JP2011082467A | JP2013504881A | WO2011136223A1', NULL, NULL, 1, '\\20220510\\4dcc8dab1df44438912f816d6d089182.png', NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 39836, 39838, 39837, 17);
INSERT INTO `os_patent` VALUES (23506, 'R-T-B系焼結磁石の製造方法', '制造RTB基烧结磁体的方法', 'JP6508420B2', 'R-T-B系焼結磁石の表面の塗布領域に粘着剤を塗布する塗布工程と、Dy及びTbの少なくとも一方である重希土類元素RHの合金または化合物の粉末から形成した粒度調整粉末をR-T-B系焼結磁石の表面の塗布領域に付着させる付着工程と、R-T-B系焼結磁石の焼結温度以下の温度で熱処理して、粒度調整粉末に含まれる重希土類元素RHをR-T-B系焼結磁石の表面から内部に拡散する拡散工程とを含む。粒度調整粉末の粒度は、粒度調整粉末を構成する粉末粒子がR-T-B系焼結磁石の表面の全体に配置されて1層の粒子層を形成したときに、粒度調整粉末に含まれる重希土類元素RHの量が前記R-T-B系焼結磁石に対して質量比で0.6〜1.5%の範囲内になるように設定される。', '基于RTB的烧结磁体的涂覆步骤,用于将粘合剂施加到基于RTB的烧结磁体的表面的涂覆区域,以及由重稀土元素RH合金或化合物的粉末形成的粒度调节粉末或化合物,其是Dy和Tb中的至少一种。沉积过程附接到RTB基烧结磁体表面表面的表面的表面的表面的表面的表面的表面的表面的表面和热处理在温度或更小的情况下,粒度调节粉末中包含的重稀土元素RH从RTB的烧结磁体的表面来自RTB的烧结磁体的表面。包括扩散扩散步骤。粒度调节粉末的粒度是粒度调节粉末中包含的重稀土元素RH,当构成粒度调节粉末的粉末颗粒布置在RTB的烧结磁体的整个表面上并形成一个- 层颗粒层。金额', 'JP2018511500', 1501171200, 'JP6508420B2', 1557244800, 1534348800, NULL, 1554998400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 23, 2, 0, 0, 0, NULL, NULL, NULL, '2016155761', 'JP', 1470585600, 12, 12, NULL, NULL, 8, 0, 0, 0, 0, NULL, NULL, NULL, '池田 安希子', NULL, 'JP2008263179A | JP2012248827A | JP2012248828A | WO2006043348A1 | WO2009087975A1 | WO2013002170A1 | WO2015163397A1 | WO2016039353A1', NULL, NULL, 1, '\\20220510\\cc3b729977f14110bb5a73fea5914412.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 40179, 40181, 40180, 13);
INSERT INTO `os_patent` VALUES (23507, 'Method of producing r-t-b sintered magnet', 'r-t-b烧结磁铁的制造方法', 'EP3499530B1', 'An application step of applying an adhesive agent to an application area of a surface of a sintered R-T-B based magnet, an adhesion step of allowing a particle size-adjusted powder that is composed of a powder of an alloy or a compound of a heavy rare-earth element RH which is at least one of Dy and Tb to adhere to the application area of the surface of the sintered R-T-B based magnet, and a diffusing step of heating it at a temperature which is equal to or lower than a sintering temperature of the sintered R-T-B based magnet to allow the heavy rare-earth element RH contained in the particle size-adjusted powder to diffuse from the surface into the interior of the sintered R-T-B based magnet are included. The particle size of the particle size-adjusted powder is set so that, when powder particles composing the particle size-adjusted powder are placed on the entire surface of the sintered R-T-B based magnet to form a single particle layer, the amount of heavy rare-earth element RH contained in the particle size-adjusted powder is in a range from 0.6 to 1.5% with respect to the sintered R-T-B based magnet by mass ratio.', '将粘合剂施加到RTB基烧结磁体表面的涂覆区域的粘合步骤，允许由合金粉末或重稀土化合物组成的粒度调节粉末的粘合步骤土壤元素RH是Dy和Tb中的至少一种粘附到RTB基烧结磁体表面的涂覆区域，以及在等于或低于烧结温度的温度下加热它的扩散步骤。研究了RTB系烧结磁铁，其使粒径调整后的粉末中含有的重稀土元素RH从表面扩散到RTB系烧结磁铁的内部。调节粒度调节粉末的粒度，使得当构成粒度调节粉末的粉末颗粒放置在RTB基烧结磁体的整个表面上以形成单个颗粒层时，重稀释剂的量 - 相对于RTB系烧结磁铁的质量比，粒径调整粉末中含有的土壤元素RH为0.6~1.5％。', 'EP2017839260', 1501171200, 'EP3499530B1', 1620748800, 1560873600, NULL, 1620748800, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 24, 2, 0, 0, 0, NULL, NULL, NULL, '2016155761', 'JP', 1470585600, 12, 12, NULL, NULL, 11, 0, 0, 0, 0, NULL, '901', NULL, NULL, NULL, 'DE102015220415A1 | EP2239747A1 | JP2008263179A | JP2012234971A | JP2012248827A | JP2012248828A | JP2015163397A | WO2006043348A1 | WO2009087975A1 | WO2013002170A1 | WO2016039353A1', NULL, NULL, 1, '\\20220510\\3bfcda2586d94f758071936799795031.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, '有效:DE,BE,LU,FR,GB,IE | 失效:RS,NO,FI,PT,BG,DK,LT,LV,HR,SE,MC,SK,SM,EE,CH,IS,GR,ES,AT,CZ,PL,RO,LI,NL | 未确认:HU,SI,MK,MT,IT,AL,CY,TR', 40179, 40181, 40180, 13);
INSERT INTO `os_patent` VALUES (23508, 'VERFAHREN ZUR HERSTELLUNG EINES R-T-B-SINTERMAGNETEN', '制造R-T-B烧结磁体的方法', 'DE602017038618T2', 'This invention includes: an application step for applying an adhesive to an application region of the surface of an R-T-B sintered magnet; an adhesion step for causing a granularity adjustment powder formed from a powder of a compound or an alloy of a heavy rare earth element RH, which is Dy and/or Tb, to adhere to the application region of the surface of the R-T-B sintered magnet; and a diffusion step for performing a heat treatment at a temperature equal to or lower than the sintering temperature of the R-T-B sintered magnet and causing the heavy rare earth element RH contained in the granularity adjustment powder to be diffused from the surface of the R-T-B sintered magnet to the interior. The granularity of the granularity adjustment powder is set so that the amount of the heavy rare earth element RH contained in the granularity adjustment powder is in a range of 0.6-1.5% by mass in relation to the R-T-B sintered magnet when the powder particles constituting the granularity adjustment powder are disposed across the entire surface of the R-T-B sintered magnet to form a single particle layer.', '本发明包括：涂敷工序，在R-T-B烧结磁铁的表面的涂敷区域涂敷粘接剂;在所述R-T-B烧结磁铁的表面的涂布区域上附着由作为Dy和/或Tb的重稀土元素RH的化合物或合金的粉末形成的粒度调整粉末的粘合工序;以及扩散工序，在RTB烧结磁铁的烧结温度以下的温度下进行热处理，使粒度调整用粉末中含有的重稀土类元素RH从RTB烧结磁铁的表面扩散到内部。粒度调节粉末的粒度被设定为，当构成粒度调节用粉末的粉末粒子为粉末时，相对于RTB烧结磁铁，粒度调节用粉末中含有的重稀土元素RH的量为0.6〜1.5质量％粒度调节粉末横跨RTB烧结磁体的整个表面布置以形成单个颗粒层。', 'DE602017038618', 1501171200, 'DE602017038618T2', 1620748800, 1620748800, NULL, 1620748800, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 46, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '895', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 15, NULL, NULL, NULL, 40182, 40181, 40183, 13);
INSERT INTO `os_patent` VALUES (23509, 'Method of producing R-T-B sintered magnet', 'R-T-B烧结磁铁的制造方法', 'US11062844B2', 'A method for producing a sintered R-T-B based magnet includes applying an adhesive agent to an application area of the magnet, adhering a particle size-adjusted powder of a heavy rare-earth element RH which is at least one of Dy and Tb to the application area, and heating at a temperature which is equal to or lower than a sintering temperature of the magnet to allow the element RH in the particle size-adjusted powder to diffuse from the surface into the interior of the magnet. The particle size of the particle size-adjusted powder is set so that, when powder particles are placed on the entire surface of the magnet to form a single particle layer, the amount of element RH in the particle size-adjusted powder is in a range from 0.6 to 1.5% with respect to the magnet by mass ratio.', '一种制造烧结RTB基磁体的方法包括将粘合剂施加到磁体的施加区域,粘附重稀土元素RH的粒度调节的粉末,其是Dy和Tb中的至少一种到应用区域并且在等于或低于磁体的烧结温度的温度下加热,以允许元素RH在粒度调节的粉末中从表面漫射到磁体的内部。粒度调节粉末的粒度设定为使得当粉末颗粒放置在磁体的整个表面上以形成单个颗粒层时,粒度调节粉末中的元素RH的量在范围内通过质量比相对于磁体为0.6至1.5%。', 'US16/322755', 1501171200, 'US11062844B2', 1626105600, 1562774400, NULL, 1626105600, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 18, 2, 0, 0, 0, NULL, NULL, NULL, '2016155761', 'JP', 1470585600, 12, 12, NULL, NULL, 18, 0, 0, 0, 3, NULL, '869', NULL, 'WANG, NICHOLAS A', 'XU, JIANGTIAN', 'CN105051844A | JP2008263179A | JP2012234971A | JP2012248827A | JP2012248828A | US20080245442A1 | US20100282371A1 | US20130169394A1 | US20140120248A1 | US20160297028A1 | US20170183765A1 | US20170263379A1 | US20190214191A1 | WO2006043348A1 | WO2009087975A1 | WO2013002170A1 | WO2015163397A1 | WO2016039353A1', NULL, 'JP-2012234971-A English translation (Year: 2020). | Official Communication issued in International Patent Application No. PCT/JP2017/027518, dated Oct. 17, 2017. | Yan (Year: 2011).', 1, '\\20220510\\87241d58f44d424b81fe77de4b4f5360.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 40179, 40181, 40180, 13);
INSERT INTO `os_patent` VALUES (23510, 'R-T-B系焼結磁石', 'R-T-B系焼结磁石', 'JP6501038B2', '本開示のR-T-B系焼結磁石は、主相結晶粒及び粒界相を含むR-T-B系焼結磁石であって、R:27.5質量%以上35.0質量%以下(Rは希土類元素うちの少なくとも一種であり、Nd及びPrを必ず含む)、B:0.80質量%以上1.05質量%以下、Ga:0.05質量%以上1.0質量%以下、M:0質量%以上2質量%以下(MはCu、Al、Nb、Zrの少なくとも一種)、残部T(TはFe又はFeとCo)及び不純物を含有する。磁石表面から300μmの深さに位置する前記主相結晶粒の中央部におけるNdの濃度に対するPrの濃度の比率であるPr/Ndは1より低く、磁石表面から300μmの深さに位置する二粒子粒界内のNdの濃度に対するPrの濃度の比率であるPr/Ndは1より高く、磁石表面から磁石内部に向かってGa濃度が漸減する部分を含む。', '本公开的RTB的烧结磁体是含有主相晶晶粒的RTB的烧结磁体,晶界相,R:27.5质量%以上R:27.5质量%,35.0质量%或更小(R是至少一个稀土元素,Nd和Pr总是包括在内),B:0.80质量%或更多,1.05质量%或更低,Ga:0.05质量%以上,1.0质量%或更低,M:0%质量以上或更高,2质量%或更少(M是Cu,Al,Nb,Zr)中的至少一种,剩余部分T(t是Fe或Fe,Co 2)和杂质。pr / nd,其是位于距离磁体表面表面的300μm深度的主相晶粒的中央部分的Pr浓度与Nd浓度的比率低于1,并且位于a的两个颗粒距磁体PR / ND表面的深度为300μm,这是PR浓度与晶界中Nd浓度的比率高于1,并且含有GA浓度逐渐从磁体表面逐渐减小的部分磁铁。', 'JP2018511501', 1502640000, 'JP6501038B2', 1555430400, 1535558400, NULL, 1553788800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 27, 1, 0, 0, 0, NULL, NULL, NULL, '2016159913 | 2017015396', 'JP | JP', 1471363200, 9, 9, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '右田 勝則', NULL, 'JP2012015168A | JP2014130888A | WO2009031292A1 | WO2012036294A1 | WO2013008756A1 | WO2016043039A1 | WO2016133071A1', NULL, NULL, 1, '\\20220510\\e6cbd90b5b844b9b8a115b8f2a8a0c1f.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 40184, 40186, 40185, 9);
INSERT INTO `os_patent` VALUES (23511, 'R-t-b sintered magnet', 'R-t-b烧结磁铁', 'EP3503130A4', 'A sintered R-T-B based magnet according to the present disclosure is a sintered R-T-B based magnet containing a main phase crystal grain and a grain boundary phase, the sintered R-T-B based magnet containing: R: not less than 27.5 mass% and not more than 35.0 mass% (R is at least one rare-earth element which always includes Nd and Pr); B: not less than 0.80 mass% and not more than 1.05 mass%; Ga: not less than 0.05 mass% and not more than 1.0 mass%; M: not less than 0 mass% and not more than 2 mass% (where M is at least one of Cu, Al, Nb and Zr); and a balance T (where T is Fe, or Fe and Co) and impurities. A Pr/Nd which is a ratio of a concentration of Pr to a concentration of Nd in a central portion of a main phase crystal grain that is located at a depth of 300 µm from the magnet surface is lower than 1; and a Pr/Nd which is a ratio of a concentration of Pr to a concentration of Nd in an intergranular grain boundary that is located at a depth of 300 µm from the magnet surface is higher than 1. A portion where the Ga concentration gradually decreases from the magnet surface toward the magnet interior exists.', '根据本公开的RTB基烧结磁体是包含主相晶粒和晶界相的RTB基烧结磁体，RTB基烧结磁体包含：R：不小于27.5质量％且不大于35.0质量％ （R是至少一种总是包含Nd和Pr的稀土元素）; B：不小于0.80质量％且不大于1.05质量％; Ga：0.05质量％以上且1.0质量％以下。 M：不小于0质量％且不大于2质量％（其中M是Cu，Al，Nb和Zr中的至少一种）;和余量T（其中T是Fe，或Fe和Co）和杂质。 Pr / Nd是主相晶粒的中心部分中的Pr浓度与Nd浓度之比，其位于距磁体表面300μm的深度处，低于1;并且Pr / Nd是位于距离磁体表面300μm的深度的晶间晶界中的Pr浓度与Nd浓度之比，高于1. Ga浓度逐渐降低的部分从磁铁表面到磁铁内部存在。', 'EP2017841486', 1502640000, 'EP3503130A4', 1584460800, 1561478400, NULL, NULL, '欧洲专利局', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A4', NULL, NULL, 29, 1, 0, 0, 0, NULL, NULL, NULL, '2016159913 | 2017015396', 'JP | JP', 1471363200, 9, 9, NULL, NULL, 1, 0, 0, 0, 0, NULL, '894', NULL, NULL, NULL, 'EP3330984A1', NULL, NULL, 1, '\\20220510\\3b514c3d59a346359b2e12052aa5ac44.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 40184, 40186, 40185, 9);
INSERT INTO `os_patent` VALUES (23512, 'R-T-B sintered magnet', 'R-T-B烧结磁铁', 'US11174537B2', 'A sintered R-T-B based magnet includes a main phase crystal grain and a grain boundary phase, in which R: not less than 27.5 mass % and not more than 35.0 mass % (R always includes at least Nd and Pr); B: not less than 0.80 mass % and not more than 1.05 mass %; Ga: not less than 0.05 mass % and not more than 1.0 mass %; M: not more than 2 mass % (where M is at least one of Cu, Al, Nb, and Zr); and a balance T (where T is Fe, or Fe and Co) and impurities. At 300-μm depth from the magnet surface, a Pr/Nd ratio in a central portion of a main phase crystal grain is lower than 1, and a Pr/Nd ratio in an intergranular grain boundary is higher than 1. The Ga concentration gradually decreases in a portion of the magnet from the surface toward the interior.', '烧结的R-T-B基磁体包括主相晶晶粒和晶界相,其中R:不小于27.5质量%,不超过35.0质量%(r总是包括至少Nd和Pr);B:不低于0.80质量%,不超过1.05质量%;GA:不小于0.05质量%,不超过1.0质量%;M:不超过2质量%(其中M是Cu,Al,Nb和Zr中的至少一种);平衡T(其中T是Fe,或Fe和Co)和杂质。在磁体表面的300μm深度处,主相晶晶粒的中心部分中的Pr / Nd比率低于1,并且晶状体边界中的Pr / Nd比率高于1.Ga浓度逐渐从表面朝向内部降低磁体的一部分。', 'US16/324584', 1502640000, 'US11174537B2', 1636992000, 1560960000, NULL, 1636992000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 19, 1, 0, 0, 0, NULL, NULL, NULL, '2016159913 | 2017015396', 'JP | JP', 1471363200, 9, 9, NULL, NULL, 15, 0, 0, 0, 3, NULL, '869', NULL, 'YANG, JIE', NULL, 'CN107077965A | JP2014130888A | US10388441B2 | US20110205006A1 | US20130078369A1 | US20140132377A1 | US20170256344A1 | US20180240590A1 | US20190211419A1 | WO2009031292A1 | WO2012036294A1 | WO2013008756A1 | WO2015020182A1 | WO2016043039A1', NULL, 'NPL: on-line English translation of JP 2014130888 A, Jul. 2014 (Year: 2014). | Official Communication issued in Chinese Patent Application No. 201780045364.3, dated Nov. 15, 2019. | Official Communication issued in International Patent Application No. PCT/JP2017/029270, dated Nov. 14, 2017.', 1, '\\20220510\\89c7c242a3f84f259ea8a6291fed83c2.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 40184, 40186, 40185, 9);
INSERT INTO `os_patent` VALUES (23513, '皮膜付磁石合金粉の製造方法', '用磁性膏粉粉制造涂层的方法', 'JP6865437B2', '【課題】希土類元素を含む鉄系磁石合金粉の表面に、酸化クロムを含む皮膜を形成する方法を提供する。\n\n【解決手段】本発明に係る皮膜付磁石合金粉の製造方法は、水の含有量が0体積%以上25体積%以下である有機溶媒に六価クロムイオン及び無機酸を添加して、pHを-1.0以上7.0以下、六価クロムイオン濃度を酸化クロム(VI)換算で0.1g/L以上50g/L以下に調整してクロム溶液を調製する溶液調製工程と、クロム溶液を0℃以上40℃以下で5日以上45日以下の期間エージングするエージング工程と、希土類元素を含む鉄系磁石合金粉を、クロム溶液に浸漬して、鉄系磁石合金粉の表面に酸化クロムを含む皮膜を形成する浸漬工程と、を含む。\n\n【選択図】図1', '要解决的问题：提供一种在含有稀土元素的铁基磁体合金粉末的表面上形成含有氧化铬的膜的方法。\n\n根据本发明的制备具有涂层的涂覆磁体粉末的方法包括将六价铬离子和无机酸加入到含水量为0体积％至25体积％的有机溶剂中。根据氧化铬（VI）将六价铬离子浓度调节至0.1g / L以上且50g / L以下以制备铬溶液，在0℃至40℃下制备铬溶液的步骤为-1.0至7.0。老化5至45天的老化步骤和含有稀土元素的铁基磁性合金粉末浸入铬溶液中，在铁基磁铁合金粉末的表面上形成含有氧化铬的薄膜沉浸式的一步。\n\n点域1', 'JP2017158249', 1502985600, 'JP6865437B2', 1619539200, 1551888000, NULL, 1617811200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 6, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '秋山 直人', NULL, 'JP1974024851A | JP1978005038A | JP1988076801A | JP1990294488A | JP1999186014A | JP2000208321A | JP2002124406A', NULL, NULL, 1, '\\20220510\\cd25475f7dd741d79cf130447be2b58f.png', NULL, NULL, 2, NULL, NULL, 8, NULL, NULL, NULL, 40187, 40189, 40188, 2);
INSERT INTO `os_patent` VALUES (23514, '希土類元素の炭酸塩の製造方法', '稀土元素碳酸酯的制备方法', 'JP6988293B2', '【課題】酸化処理を行った処理対象物の炭素存在下での熱処理で発生した炭酸ガスを、大気中に放出することなく処分することができ、かつ、鉄族元素から分離された希土類元素の酸化物が例えばホウ素を含む場合でも、そのホウ素含量をコストをかけずに低減できる、ホウ素含量が低減された希土類元素の酸化物を得ることができる、希土類元素炭酸塩の製造方法の提供。\n\n【解決手段】酸化処理を行った処理対象物の炭素存在下で1150℃以上の温度で熱処理した希土類元素の酸化物を、pH5.5以上7.5未満の希土類元素の溶液に供給し、炭酸ガスを供給することで希土類元素の炭酸塩を沈殿させる、希土類元素の酸化物に変換することが容易な希土類元素炭酸塩の製造方法。\n\n【選択図】なし', '在在处理对象的碳的存在下热处理产生的二氧化碳气体要进行氧化处理，可以在不被释放到大气中进行处理，并且，的稀土元素选自铁族元素分离即使含有例如氧化硼，可降低硼含量没有成本，可以降低获得的稀土类元素硼含量的氧化物，稀土类元素的碳酸盐提供一种生产方法。\n\n溶液：在经受氧化处理的待处理物体的碳存在下，在1150℃或更高的温度下热处理的稀土元素氧化物被供应到pH为5.5或更高且低于7.5的稀土元素溶液，一种稀土元素碳酸盐的制造方法，该稀土元素碳酸盐易于转化为稀土元素氧化物，该稀土元素氧化物通过供给稀土元素的碳酸盐而析出。【选择图】无', 'JP2017176145', 1505232000, 'JP6988293B2', 1641312000, 1540396800, NULL, 1638720000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, '2017063915', 'JP', 1490630400, 2, 2, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '神野 将志', NULL, 'JP1989126221A | JP1992254413A | JP1992310516A | JP2008279552A | WO2013018710A1', NULL, NULL, 1, '\\20220510\\cfd1aec6434d498c9bab402f8abc9b5c.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 40190, 40192, 40191, 2);
INSERT INTO `os_patent` VALUES (23515, '希土類元素の炭酸塩の製造方法', '稀土元素碳酸酯的制备方法', 'JP6988292B2', '【課題】 特許文献1(国際公開第2013/018710号)に記載の方法において、酸化処理を行った処理対象物を炭素の存在下で熱処理することで発生した炭酸ガスを、大気中に放出することなく処分することができ、かつ、特許文献1に記載の方法により、鉄族元素から分離された希土類元素の酸化物が例えばホウ素を含む場合でも、そのホウ素含量をコストをかけずに低減することで、ホウ素含量が低減された希土類元素の酸化物を得ることができる、希土類元素の炭酸塩を製造する方法を提供すること。\n\n【解決手段】 特許文献1に記載の方法において、酸化処理を行った処理対象物を炭素の存在下で熱処理することで発生した炭酸ガスを用いて、希土類元素の塩酸溶液にアルカリを加えてpHを7.5以上に調整することで、溶液中に希土類元素の水酸化物からなるゲル状沈殿物を生成させた溶液から、希土類元素の酸化物に変換することが容易な希土類元素の炭酸塩を製造する。\n\n【選択図】 なし', '要解决的问题：在专利文献1（国际公开No.2013 / 018710）中描述的方法中，通过热处理在碳存在下经受氧化处理的待处理物体而产生的二氧化碳气体被释放到大气中。可以毫无问题地处理，并且即使通过专利文献1中描述的方法从铁族元素分离的稀土元素的氧化物包含例如硼，也可以无需成本地降低其硼含量。本发明的目的是提供一种制备稀土元素碳酸盐的方法，该方法可以获得具有降低的硼含量的稀土元素的氧化物。\n\n解决方案：在专利文献1中描述的方法中，使用通过热处理在碳存在下进行氧化处理的待处理物体产生的二氧化碳气体，将碱加入稀土元素的盐酸溶液中。调节至少7.5以产生稀土元素的碳酸盐，其可以从溶液中产生由稀土元素的氢氧化物组成的凝胶状沉淀物的溶液中容易地转化为稀土元素的氧化物。到。\n\n[所选图]无', 'JP2017176144', 1505232000, 'JP6988292B2', 1641312000, 1554307200, NULL, 1638720000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '神野 将志', NULL, 'JP1992254413A | JP1992310516A | JP2008279552A | WO2013018710A1 | WO2014057922A1', NULL, NULL, 1, '\\20220510\\e0bd9b86044c4d1191d39598b368cace.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 40193, 40195, 40194, 2);
INSERT INTO `os_patent` VALUES (23516, 'R-T-B系焼結磁石の製造方法', '制造R-T-B基烧结磁体的方法', 'JP6443584B2', 'R-T-B系焼結磁石素材の表面の塗布領域に粘着剤を塗布する塗布工程と、Dy及びTbの少なくとも一方であるPr-Ga合金の合金又は化合物の粉末から形成した粒度調整粉末をR-T-B系焼結磁石素材の表面の塗布領域に付着させる付着工程と、R-T-B系焼結磁石素材の焼結温度以下の温度で熱処理して、粒度調整粉末に含まれるPr-Ga合金をR-T-B系焼結磁石素材の表面から内部に拡散する拡散工程とを含む。粒度調整粉末の粒度は、粒度調整粉末を構成する粉末粒子がR-T-B系焼結磁石素材の表面の全体に配置されて1層以上3層以下の粒子層を形成したときに、粒度調整粉末に含まれるGaの量が前記R-T-B系焼結磁石素材に対して質量比で0.10〜1.0%の範囲内になるように設定される。', '将粘合剂施加到烧结的基于RTB的磁体工件表面的施加区域的施加步骤，允许由合金粉末或Pr-的化合物的粉末组成的粒度调节粉末的粘附步骤。 在烧结的RTB基磁体的表面的施加区域中的Dy和Tb中的至少一种的Ga合金，以及在等于或低于烧结的RTB的烧结温度的温度下对其进行加热的扩散步骤 包括使粒径调节后的粉末中所含的Pr-Ga合金从表面扩散到RTB基烧结磁体内部的基体。 设定粒径调整后的粉末的粒径，以使将构成粒径调整后的粉末的粉末粒子放置在RTB系烧结磁体的整个表面上而形成一层以上的粒子层。 在不超过三层的情况下，以质量比计，相对于RTB系烧结磁体，粒径调整后的粉末中所含的Ga的含量为0.10〜1.0％。', 'JP2018511502', 1506355200, 'JP6443584B2', 1545753600, 1537977600, NULL, 1544112000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 21, 2, 0, 0, 0, NULL, NULL, NULL, '2016190669', 'JP', 1475078400, 9, 9, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '森 透', NULL, 'JP2004027313A | JP2012234971A | JP2016129217A | WO2006043348A1 | WO2016133071A1', NULL, NULL, 1, '\\20220510\\f8c0628799664632b6b9196b451bbfd6.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40196, 40198, 40197, 10);
INSERT INTO `os_patent` VALUES (23517, 'Method of producing r-t-b sintered magnet', 'r-t-b烧结磁铁的制造方法', 'US20190214191A1', 'An application step of applying an adhesive agent to an application area of a surface of a sintered R-T-B based magnet work, an adhesion step of allowing a particle size-adjusted powder that is composed of a powder of an alloy or a compound of a Pr—Ga alloy which is at least one of Dy and Tb to the application area of the surface of the sintered R-T-B based magnet work, and a diffusing step of heating it at a temperature which is equal to or lower than a sintering temperature of the sintered R-T-B based magnet work to allow the Pr—Ga alloy contained in the particle size-adjusted powder to diffuse from the surface into the interior of the sintered R-T-B based magnet work are included. The particle size of the particle size-adjusted powder is set so that, when powder particles composing the particle size-adjusted powder are placed on the entire surface of the sintered R-T-B based magnet work to form a particle layer which is not less than one layer and not more than three layers, the amount of Ga contained in the particle size-adjusted powder is in a range from 0.10 to 1.0% with respect to the sintered R-T-B based magnet work by mass ratio.', '将粘合剂施加到RTB基烧结磁体表面的应用区域的施加步骤，允许由合金粉末或Pr-化合物组成的粒度调节粉末的粘合步骤Ga合金，其是Dy和Tb中的至少一种，对于RTB基烧结磁体的表面的应用区域，以及在等于或低于RTB烧结温度的温度下加热它的扩散步骤基于磁体的工作，包括粒度调节粉末中含有的Pr-Ga合金从表面扩散到RTB基烧结磁体的内部。调节粒径调节粉末的粒度，使得当构成粒度调节粉末的粉末颗粒放置在RTB基烧结磁体的整个表面上时，形成不小于一层的颗粒层相对于基于质量比的RTB系烧结磁体，粒径调整粉末中含有的Ga的量为0.10~1.0％，并且不超过3层。', 'US16/336130', 1506355200, 'US20190214191A1', 1562774400, 1562774400, NULL, NULL, '美国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A1', NULL, NULL, 17, 2, 0, 0, 0, NULL, NULL, NULL, '2016190669', 'JP', 1475078400, 9, 9, NULL, NULL, 0, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, 'US10643789B2 | US11062844B2 | US20190371522A1', NULL, 1, '\\20220510\\2a62aff6bab044a29e0af386642f8cea.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40196, 40198, 40197, 10);
INSERT INTO `os_patent` VALUES (23518, 'Method of producing r-t-b sintered magnet', 'r-t-b烧结磁铁的制造方法', 'EP3522185B1', 'An application step of applying an adhesive agent to an application area of a surface of a sintered R-T-B based magnet work, an adhesion step of allowing a particle size-adjusted powder that is composed of a powder of an alloy or a compound of a Pr-Ga alloy which is at least one of Dy and Tb to the application area of the surface of the sintered R-T-B based magnet work, and a diffusing step of heating it at a temperature which is equal to or lower than a sintering temperature of the sintered R-T-B based magnet work to allow the Pr-Ga alloy contained in the particle size-adjusted powder to diffuse from the surface into the interior of the sintered R-T-B based magnet work are included. The particle size of the particle size-adjusted powder is set so that, when powder particles composing the particle size-adjusted powder are placed on the entire surface of the sintered R-T-B based magnet work to form a particle layer which is not less than one layer and not more than three layers, the amount of Ga contained in the particle size-adjusted powder is in a range from 0.10 to 1.0% with respect to the sintered R-T-B based magnet work by mass ratio.', '将粘合剂施加到RTB基烧结磁体表面的应用区域的施加步骤，允许由合金粉末或Pr-化合物组成的粒度调节粉末的粘合步骤Ga合金，其是Dy和Tb中的至少一种，对于RTB基烧结磁体的表面的应用区域，以及在等于或低于RTB烧结温度的温度下加热它的扩散步骤基于磁体的工作，包括粒度调节粉末中含有的Pr-Ga合金从表面扩散到RTB基烧结磁体的内部。调节粒径调节粉末的粒度，使得当构成粒度调节粉末的粉末颗粒放置在RTB基烧结磁体的整个表面上时，形成不小于一层的颗粒层相对于基于质量比的RTB系烧结磁体，粒径调整粉末中含有的Ga的量为0.10~1.0％，并且不超过3层。', 'EP2017856124', 1506355200, 'EP3522185B1', 1627401600, 1565107200, NULL, 1627401600, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 24, 2, 0, 0, 0, NULL, NULL, NULL, '2016190669', 'JP', 1475078400, 9, 9, NULL, NULL, 8, 0, 0, 0, 0, NULL, '901', NULL, NULL, NULL, 'EP1970924A1 | JP2004027313A | JP2012234971A | JP2016034024A | JP2016129217A | WO2006043348A1 | WO2016093174A1 | WO2016133071A1', NULL, NULL, 1, '\\20220510\\ea3a12a45d6443a4a696ad0596d8feaf.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, '有效:DE,BE,LU,FR,MC,GB,IE,CH,LI | 失效:RS,NO,FI,PT,BG,LT,LV,HR,SE,GR,ES,AT,PL,NL | 未确认:DK,HU,SI,SK,SM,MK,EE,MT,IS,IT,AL,CY,CZ,RO,TR', 40196, 40198, 40197, 10);
INSERT INTO `os_patent` VALUES (23519, 'VERFAHREN ZUR HERSTELLUNG EINES R-T-B-SINTERMAGNETEN', '制造R-T-B烧结磁体的方法', 'DE602017043112T2', 'This invention includes: an application step for applying an adhesive to an application region of the surface of an R-T-B sintered magnet material; an adhesion step for causing a granularity adjustment powder formed from a powder of a compound or an alloy of a Pr-Ga alloy, which is Dy and/or Tb, to adhere to the application region of the surface of the R-T-B sintered magnet material; and a diffusion step for performing a heat treatment at a temperature equal to or less than the sintering temperature of the R-T-B sintered magnet material and causing the Pr-Ga alloy contained in the granularity adjustment powder to be diffused from the surface of the R-T-B sintered magnet material to the interior. The granularity of the granularity adjustment powder is set so that the amount of Ga contained in the granularity adjustment powder is in a range of 0.10-1.0% by mass in relation to the R-T-B sintered magnet material when the powder particles constituting the granularity adjustment powder are disposed across the entire surface of the R-T-B sintered magnet material to form one to three particle layers.', '本发明包括：将粘合剂涂覆到R-T-B烧结磁体材料表面的涂覆区域的涂覆步骤;用于使由Dy和/或Tb的Pr-Ga合金的化合物或合金的粉末形成的粒度调节粉末粘附到R-T-B烧结磁体材料表面的涂敷区域的粘合步骤;和，在RTB烧结磁铁材料的烧结温度以下进行热处理，使粒度调整粉末中含有的Pr-Ga合金从RTB烧结磁铁表面扩散的扩散工序材料到内部。设定粒度调整粉末的粒度，使得当构成粒度调整粉末的粉末颗粒为时，粒度​​调整粉末中含有的Ga的量相对于RTB烧结磁体材料在0.10-1.0质量％的范围内。设置在RTB烧结磁体材料的整个表面上以形成一至三个颗粒层。', 'DE602017043112', 1506355200, 'DE602017043112T2', 1627401600, 1627401600, NULL, 1627401600, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 41, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '895', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40199, 40198, 40200, 10);
INSERT INTO `os_patent` VALUES (23520, '拡散源', '扩散源', 'JP6922616B2', '【課題】R-T-B系焼結磁石の磁石特性を向上させる拡散源の提供。\n\n【解決手段】ジスプロシウム(Dy)及びテルビウム(Tb)の少なくとも一方を必ず含む希土類元素R1を全体の40質量%以上含有する合金の粉末30であって、合金の粉末30は、平均結晶粒径が3μmを超える金属間化合物の粒子30から構成されており、粒子30の断面は円形である拡散源30。酸素含有量が0.5〜4.0質量%であるRHRLM1M2合金の粉末30からなる拡散源。(RHがSc、Y、Gd、Tb、Dy、Ho、Er、Yb及びLuから選ばれるアクテノイド;RLはLa、Ce、Pr、Nd、Pm、Sm及びEuから選ばれるランタノイド、プラセオジム(Pr)及びネオジウム(Nd)の少なくとも1方は必ず含む;M1、M2はCu、Fe、Ga、Co、Ni及びAlから選ばれる1種以上)\n\n【選択図】図1B', '本发明的目的是提供一种用于改善RTB系烧结磁体的磁特性的扩散源。\n\n含有至少40质量％含有镝（Dy）和铽（Tb）中的至少一种的稀土元素R1的合金粉末30，其中合金粉末30具有平均晶粒尺寸扩散源30由大于3μm的金属间化合物颗粒30组成，并且颗粒30的横截面是圆形的。扩散源由RHRLM 1 M 2合金粉末30组成，其氧含量为0.5-4.0质量％。 （R是选自Sc，Y，Gd，Tb，Dy，Ho，Er，Yb和Lu的act系元素; RL是选自La，Ce，Pr，Nd，Pm，Sm和Eu，镨（Pr）和镧的镧系元素。始终包含至少一种钕（Nd）; M1，M2是选自Cu，Fe，Ga，Co，Ni和Al中的至少一种）\n\n[选定图]图1B', 'JP2017187701', 1506528000, 'JP6922616B2', 1629216000, 1555516800, NULL, 1627833600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 8, NULL, NULL, 2, 0, 0, 0, 0, NULL, NULL, NULL, '坂口 岳志', NULL, 'JP2010114200A | JP2011014668A', NULL, NULL, 1, '\\20220510\\b823b6fdc4174a06a04139c58497ad63.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 40201, 40203, 40202, 8);
INSERT INTO `os_patent` VALUES (23521, 'R-T-B系焼結磁石の製造方法', '制造R-T-B基烧结磁体的方法', 'JP6939337B2', '【課題】R-T-B系焼結磁石の磁石特性を向上させる。\n\n【解決手段】本開示のR-T-B系焼結磁石の製造方法は、R-T-B系焼結磁石素材を準備する工程と、ストリップキャスト法によって作製されたPr-Ga合金を準備する工程と、前記Pr-Ga合金に前記Pr-Ga合金の融点よりも230℃低い温度以上、融点以下の温度で熱処理を行い、前記Pr-Ga合金の粉末から拡散源を得る工程と、前記R-T-B系焼結磁石素材及び前記拡散源を処理容器内に配置し、前記R-T-B系焼結磁石素材及び前記拡散源を真空又は不活性ガス雰囲気中、600℃超950℃以下の温度で加熱することにより、前記拡散源からPr及びGaを前記R-T-B系焼結磁石素材の内部に拡散させる工程と、を含む。\n\n【選択図】なし', '本发明的目的是改善RTB基烧结磁体的磁性。\n\n根据本发明的制造RTB基烧结磁体的方法包括制备RTB基烧结磁体材料，制备通过带铸法制造的Pr-Ga合金和Pr-Ga的步骤。在不低于Pr-Ga合金的熔点230℃且不高于熔点的温度下对合金进行热处理，以从Pr-Ga合金的粉末获得扩散源;扩散源设置在处理容器中，RTB烧结磁体材料和扩散源在真空或惰性气体气氛中在大于600℃且不大于950℃的温度下加热。将Ga扩散到RTB烧结磁体材料的内部。\n\n【选择图表】无', 'JP2017187702', 1506528000, 'JP6939337B2', 1632240000, 1555516800, NULL, 1630857600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 8, NULL, NULL, 8, 0, 0, 0, 0, NULL, NULL, NULL, '秋山 直人', NULL, 'JP1988048805A | JP2003328092A | JP2005288493A | JP2007277655A | JP2012212808A | JP2017069337A | WO2013008756A1 | WO2017018291A1', NULL, NULL, 1, '\\20220510\\740a0958df1a479e83e7f65042f5efcb.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 40204, 40206, 40205, 8);
INSERT INTO `os_patent` VALUES (23522, 'R-T-B系焼結磁石の製造方法', '制造R-T-B基烧结磁体的方法', 'JP6939339B2', '【課題】R-T-B系焼結磁石の磁石特性を向上させる。\n\n【解決手段】本開示のR-T-B系焼結磁石の製造方法は、R-T-B系焼結磁石素材を準備する工程と、アトマイズ法によって作製されたPr-Ga合金の粉末を準備する工程と、前記Pr-Ga合金の粉末に前記Pr-Ga合金の粉末の融点よりも250℃低い温度以上、融点以下の温度で熱処理を行い、前記Pr-Ga合金の粉末から拡散源を得る工程と、前記R-T-B系焼結磁石素材及び前記拡散源を処理容器内に配置し、前記R-T-B系焼結磁石素材及び前記拡散源を真空又は不活性ガス雰囲気中、600℃超950℃以下の温度で加熱することにより、前記拡散源からPr及びGaを前記R-T-B系焼結磁石素材の内部に拡散させる工程と、を含む。\n\n【選択図】図1', '本发明的目的是改善RTB基烧结磁体的磁性。\n\n根据本发明的制造RTB基烧结磁体的方法包括以下步骤：制备RTB基烧结磁体材料;制备通过雾化方法制造的Pr-Ga合金粉末;将Ga合金粉末在不低于Pr-Ga合金粉末的熔点的温度下热处理250℃或更高的温度和熔点的温度，以从Pr-Ga合金的粉末获得扩散源将烧结磁体材料和扩散源设置在处理容器中，并且将RTB系烧结磁体材料和扩散源在真空或惰性气体气氛中在600℃至950℃或更低的温度下加热。将Pr和Ga从扩散源扩散到RTB基烧结磁体材料的内部。\n\n[选图]图1', 'JP2017187704', 1506528000, 'JP6939339B2', 1632240000, 1555516800, NULL, 1630857600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 8, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '秋山 直人', NULL, 'JP1991162546A | JP2011241453A | JP2017069337A | WO2013008756A1 | WO2017018252A1 | WO2017018291A1', NULL, NULL, 1, '\\20220510\\325a46c661024e8986207d1b1c6149d3.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 40207, 40209, 40208, 8);
INSERT INTO `os_patent` VALUES (23523, 'R-T-B系焼結磁石の製造方法', '制造R-T-B基烧结磁体的方法', 'JP6939338B2', '【課題】R-T-B系焼結磁石の磁石特性を向上させる。\n\n【解決手段】本開示のR-T-B系焼結磁石の製造方法は、R-T-B系焼結磁石素材を準備する工程と、メルトスピニング法によって作製されたPr-Ga合金を準備する工程と、前記Pr-Ga合金に前記Pr-Ga合金の融点よりも270℃低い温度以上、融点以下の温度で熱処理を行い、前記Pr-Ga合金の粉末から拡散源を得る工程と、前記R-T-B系焼結磁石素材及び前記拡散源を処理容器内に配置し、前記R-T-B系焼結磁石素材及び前記拡散源を真空又は不活性ガス雰囲気中、600℃超950℃以下の温度で加熱することにより、前記拡散源からPr及びGaを前記R-T-B系焼結磁石素材の内部に拡散させる工程と、を含む。\n\n【選択図】なし', '本发明的目的是改善RTB基烧结磁体的磁性。\n\n根据本发明的RTB系烧结磁体的制造方法包括以下步骤：制备RTB系烧结磁体材料;制备通过熔融纺丝法制造的Pr-Ga合金;在不低于270℃且不高于Pr-Ga合金的熔点的温度下对合金进行热处理，以从Pr-Ga合金的粉末获得扩散源;扩散源设置在处理容器中，RTB烧结磁体材料和扩散源在真空或惰性气体气氛中在大于600℃且不大于950℃的温度下加热。将Ga扩散到RTB烧结磁体材料的内部。\n\n【选择图表】无', 'JP2017187703', 1506528000, 'JP6939338B2', 1632240000, 1555516800, NULL, 1630857600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 8, NULL, NULL, 8, 0, 0, 0, 0, NULL, NULL, NULL, '秋山 直人', NULL, 'JP1988048805A | JP2003328092A | JP2005288493A | JP2007277655A | JP2012212808A | JP2017069337A | WO2013008756A1 | WO2017018291A1', NULL, NULL, 1, '\\20220510\\6cdedcc7679a425a82ff6d01beb23376.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 40210, 40206, 40205, 8);
INSERT INTO `os_patent` VALUES (23524, '拡散源', '扩散源', 'JP6939336B2', '【課題】R-T-B系焼結磁石の磁石特性を向上させる拡散源を提供する。\n\n【解決手段】拡散源は、Dy及びTbの少なくとも一方を必ず含む希土類元素R1を全体の40質量%以上含有する合金の粉末であって、合金の粉末は、平均結晶粒径が3μmを超える金属間化合物の粒子から構成されており、粒子の断面は薄片形状である。\n\n【選択図】なし', '一个目的是提供一种用于改善RTB基烧结磁体的磁性的扩散源。\n\n扩散源是含有至少40质量％的包含Dy和Tb中的至少一种的稀土元素R1的合金粉末，并且合金粉末具有平均晶粒尺寸大于3μm的金属。颗粒由嵌入化合物的颗粒组成，颗粒的横截面是薄片状的。\n\n【选择图表】无', 'JP2017187699', 1506528000, 'JP6939336B2', 1632240000, 1555516800, NULL, 1630857600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 8, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '秋山 直人', NULL, 'JP1988048805A | JP2011014668A | JP2011205117A | JP2012212808A | WO2012008426A1 | WO2013061836A1 | WO2016039352A1', NULL, NULL, 1, '\\20220510\\372d71db225e4b1cb8af5cd1c298a693.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 40211, 40213, 40212, 8);
INSERT INTO `os_patent` VALUES (23525, '拡散源', '扩散源', 'JP6946905B2', '【課題】R-T-B系焼結磁石の磁石特性を向上させる拡散源を提供する。\n\n【解決手段】Pr-Ga合金の粉末であって、Pr-Ga合金の粉末は、平均結晶粒径が3μmを超える金属間化合物の粒子から構成されており、粒子の断面は円形である拡散源30。Pr-Ga合金のNd含有量は不可避的不純物含有量以下である拡散源30。\n\n【選択図】図1B', '一个目的是提供一种用于改善RTB基烧结磁体的磁性的扩散源。\n\n种类编号：A1一种Pr-Ga合金粉末，其中Pr-Ga合金粉末由平均晶粒尺寸大于3μm的金属间化合物颗粒组成，并且颗粒的横截面是圆形的。 30。扩散源30，其中Pr-Ga合金的Nd含量等于或小于不可避免的杂质含量。\n\n[选定图]图1B', 'JP2017187700', 1506528000, 'JP6946905B2', 1634054400, 1555516800, NULL, 1632153600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 8, NULL, NULL, 2, 0, 0, 0, 0, NULL, NULL, NULL, '坂口 岳志', NULL, 'JP2019060008A | WO2013008756A1', NULL, NULL, 1, '\\20220510\\74b9b89fa38f43e0a46fcd11e50142ab.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 40214, 40209, 40208, 8);
INSERT INTO `os_patent` VALUES (23526, '拡散源', '扩散源', 'JP6946904B2', '【課題】DyやTb等の重希土類元素(RH)をできるだけ使用せずに、R-T-B系焼結磁石の高い保磁力(HcJ)及び残留磁束密度(Br)の低下抑制等の磁石特性を向上させる拡散源の提供。\n\n【解決手段】Pr-Ga合金の粉末であって、Pr-Ga合金の粉末は、平均結晶粒径が3μmを超える金属間化合物の粒子から構成されており、粒子の断面は薄片形状である拡散源。Pr-Ga合金のNd含有量は不可避的不純物含有量以下である、拡散源。組織が改質されたPr及びGaを含む拡散源30とR-T-B系焼結磁素材100とを処理容器内に配置してPr-Ga合金粉末の均一化された組織を持つ粒子から、Pr及びGaを拡散することにより、高いBrとHcJの焼結磁石を得る製造方法。\n\n【選択図】図1B', '要解决的问题：尽可能不使用重稀土元素（RH）如Dy和Tb，以获得RTB基烧结磁体的高矫顽力（Hc j）和剩余磁通密度（B ）。提供改善磁体特性的扩散源，例如抑制r）的减少。\n\n种类编号：A1一种Pr-Ga合金粉末，其中Pr-Ga合金粉末由平均晶粒尺寸超过3μm的金属间化合物颗粒组成，并且颗粒的横截面为薄片形状。源。一种扩散源，其中Pr-Ga合金的Nd含量等于或小于不可避免的杂质含量。通过将包含改性Pr和Ga的扩散源30和RTB基烧结磁性材料100放置在处理容器中，获得具有均匀结构Pr和Ga的Pr-Ga合金粉末颗粒。通过扩散获得高B r和H c的烧结磁体的制造方法。\n\n[选定图]图1B', 'JP2017187698', 1506528000, 'JP6946904B2', 1634054400, 1555516800, NULL, 1632153600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 8, NULL, NULL, 2, 0, 0, 0, 0, NULL, NULL, NULL, '坂口 岳志', NULL, 'JP2019060009A | WO2013008756A1', NULL, NULL, 1, '\\20220510\\8d835a6e5cd346179e78383a515d92a1.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 40215, 40206, 40205, 8);
INSERT INTO `os_patent` VALUES (23527, 'R-T-B系焼結磁石の製造方法', '基于R-T-B基烧结磁体的方法', 'JP7000774B2', '【課題】R-T-B系焼結磁石の磁石特性を向上させる方法を提供する。\n\n【解決手段】 R1-T-B系焼結磁石素材(R1は希土類元素、TはFe又はFeとCo)を用意する工程と、Dy及びTbの少なくとも一方を必ず含む希土類元素R2を全体の40質量%以上含有する合金を用意する工程と、前記合金に前記合金の融点よりも230℃低い温度以上、融点以下の温度で熱処理を行い、熱処理後の合金を粉砕することにより拡散源を得る工程と、前記R1-T-B系焼結磁石素材及び前記拡散源を処理容器内に配置し、前記R1-T-B系焼結磁石素材及び前記拡散源を前記R1-T-B系焼結磁石素材の焼結温度以下の温度に加熱して、前記拡散源に含まれるDy及びTbの少なくとも一方を前記R1-T-B系焼結磁石素材の表面から内部に拡散する拡散工程と、を含み、前記合金は、ストリップキャスト法によって作製された合金である。\n\n【選択図】なし', '本发明提供一种改善RTB系烧结磁体的磁特性的方法。\n\n解决方案：制备R1-TB基烧结磁体材料（R1是稀土元素，T是Fe或Fe和Co）的步骤，以及包括Dy和Tb中的至少一种的整个稀土元素R2的40质量％制备含有上述合金的合金的步骤，在不低于合金熔点但不低于230℃且不高于熔点的温度下热处理合金并在热处理后粉碎合金以获得扩散源的步骤;基于R1-TB的烧结磁体材料和扩散源设置在处理容器中，并且R1-TB基烧结磁体材料和扩散源小于R1-TB基烧结磁体材料的烧结温度和D.在一定温度下加热的扩散步骤，以使扩散源中包含的Dy和Tb中的至少一种从R1-TB基烧结磁体材料的表面扩散到内部，并且通过带铸法形成合金它是一种合金。\n\n【选择图表】无', 'JP2017187705', 1506528000, 'JP7000774B2', 1643904000, 1555516800, NULL, 1640620800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 8, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2011014668A', NULL, NULL, 1, '\\20220510\\fca27be34cac47aeac173553c62753fa.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 40216, 40213, 40212, 8);
INSERT INTO `os_patent` VALUES (23528, 'R-T-B系焼結磁石の製造方法', '基于R-T-B基烧结磁体的方法', 'JP7000775B2', '【課題】R-T-B系焼結磁石の磁石特性を向上させる方法を提供する。\n\n【解決手段】 R1-T-B系焼結磁石素材(R1は希土類元素、TはFe又はFeとCo)を用意する工程と、Dy及びTbの少なくとも一方を必ず含む希土類元素R2を全体の40質量%以上含有する合金を用意する工程と、前記合金に前記合金の融点よりも270℃低い温度以上、融点以下の温度で熱処理を行い、熱処理後の合金を粉砕することにより拡散源を得る工程と、前記R1-T-B系焼結磁石素材及び前記拡散源を処理容器内に配置し、前記R1-T-B系焼結磁石素材及び前記拡散源を前記R1-T-B系焼結磁石素材の焼結温度以下の温度に加熱して、前記拡散源に含まれるDy及びTbの少なくとも一方を前記R1-T-B系焼結磁石素材の表面から内部に拡散する拡散工程と、を含み、前記合金は、メルトスピニング法によって作製された合金である。\n\n【選択図】なし', '本发明提供一种改善RTB系烧结磁体的磁特性的方法。\n\n解决方案：制备R1-TB基烧结磁体材料（R1是稀土元素，T是Fe或Fe和Co）的步骤，以及包括Dy和Tb中的至少一种的整个稀土元素R2的40质量％制备含有上述合金的合金的步骤，在不低于合金的熔点但不低于270℃且不高于熔点的温度下对合金进行热处理的步骤，并在热处理后粉碎合金以获得扩散源;基于R1-TB的烧结磁体材料和扩散源设置在处理容器中，并且R1-TB基烧结磁体材料和扩散源小于R1-TB基烧结磁体材料的烧结温度并且D.在一定温度下加热的扩散步骤，以使扩散源中包含的Dy和Tb中的至少一种从R1-TB基烧结磁体材料的表面扩散到内部，并且通过熔融纺丝法熔融纺丝合金。它是一种合金。\n\n【选择图表】无', 'JP2017187706', 1506528000, 'JP7000775B2', 1643904000, 1555516800, NULL, 1640620800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 8, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2011014668A', NULL, NULL, 1, '\\20220510\\963b128e5486480889b999e61411d704.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 40217, 40213, 40212, 8);
INSERT INTO `os_patent` VALUES (23529, 'R-T-B系焼結磁石の製造方法', '基于R-T-B基烧结磁体的方法', 'JP7000776B2', '【課題】R-T-B系焼結磁石の磁石特性を向上させる方法を提供する。\n\n【解決手段】R1-T-B系焼結磁石素材(R1は希土類元素、TはFe又はFeとCo)を用意する工程と、Dy及びTbの少なくとも一方を必ず含む希土類元素R2を全体の40質量%以上含有する合金の粉末を用意する工程と、前記合金の粉末に前記合金の粉末の融点よりも250℃低い温度以上、融点以下の温度で熱処理を行い、前記合金の粉末から拡散源を得る工程と、前記R1-T-B系焼結磁石素材及び前記拡散源を処理容器内に配置し、前記R1-T-B系焼結磁石素材及び前記拡散源を前記R1-T-B系焼結磁石素材の焼結温度以下の温度に加熱して、前記拡散源に含まれるDy及びTbの少なくとも一方を前記R1-T-B系焼結磁石素材の表面から内部に拡散する拡散工程と、を含み、前記合金の粉末は、アトマイズ法によって作製された粉末である、R-T-B系焼結磁石の製造方法。\n\n【選択図】なし', '本发明提供一种改善RTB系烧结磁体的磁特性的方法。\n\n基于R1-TB烧结磁铁材料（R1是稀土元素，T是Fe或者Fe和Co）制备，Dy和中的至少一个总是包含40重量总稀土元素R2％的Tb的制备的合金的上述含粉末，该合金粉末的250℃温度比熔点较低或较高的合金粉末，在比熔点低的温度下的热处理，以获得从所述的合金的粉末的扩散源当R1-TB系烧结磁铁材料和所述地点扩散源到处理容器，其特征在于，R1-TB系烧结磁铁材料和所述扩散源的烧结温度，所述R1-TB系烧结磁铁材料并加热到一个温度，其中，从包含在所述扩散源Dy和Tb中的至少一者的基于R1-TB烧结磁铁材料表面向内扩散的扩散工序中，将合金的粉末，它是由雾化法中，RTB烧结磁铁的制造方法制造的粉末。\n\n【选择图表】无', 'JP2017187707', 1506528000, 'JP7000776B2', 1643904000, 1555516800, NULL, 1640620800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 8, NULL, NULL, 2, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2011014668A | JP2012248827A', NULL, NULL, 1, '\\20220510\\12da46fd2f464a3095ce9b18b5aaf66e.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 40218, 40203, 40202, 8);
INSERT INTO `os_patent` VALUES (23530, 'R-T-B系焼結磁石及びその製造方法', '基于R-T-B的烧结磁体和制造方法', 'JP6972886B2', '【課題】重希土類元素の含有量を低減しつつ、高いBr及び高いHcJを有するR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】本開示のR-T-B系焼結磁石の製造方法は、R1-T1-B系焼結体を準備する工程と、R2-Si系合金を準備する工程と、前記焼結体の表面の少なくとも一部に前記合金の少なくとも一部を接触させ、真空又は不活性ガス雰囲気中、450℃以上1100℃以下の温度で熱処理を実施する工程とを含む。\n\n【選択図】図1', '本发明提供一种制造具有高B r和高H c的RTB基烧结磁体的方法，同时降低重稀土元素的含量。\n\n根据本发明的制造RTB烧结磁体的方法包括制备R1-T1-B烧结体的步骤，制备R2-Si合金的步骤和烧结体的表面。并且使至少一部分合金与至少一部分接触，并在真空或惰性气体气氛中在450℃以上且1100℃以下的温度下进行热处理。\n\n[选图]图1', 'JP2017199122', 1507824000, 'JP6972886B2', 1637683200, 1557936000, NULL, 1636300800, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 21, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '久保田 昌晴', NULL, 'JP2012248827A | JP2012248828A | JP2013175705A | JP2014112624A | WO2013008756A1 | WO2015020182A1 | WO2016133071A1', NULL, NULL, 1, '\\20220510\\d9bbe53d741b4ff5a4264a138a490482.png', NULL, NULL, 1, NULL, NULL, 13, NULL, NULL, NULL, 40219, 40221, 40220, 4);
INSERT INTO `os_patent` VALUES (23531, 'R-T-B系焼結磁石およびその製造方法', 'R-T-B系烧结磁铁及其制造方法', 'JP6380724B1', '本開示によるR-T-B系焼結磁石は、実施形態において、R:27mass%以上37mass%以下(Rは、希土類元素のうち少なくとも一種であり、Nd及びPrの少なくとも一方を必ず含む)、B:0.75mass%以上0.97mass%以下、Ga:0.1mass%以上1.0mass%以下、Cu:0mass%以上1.0mass%以下、T:61.03mass%以上(Tは、Fe、Co、Al、Mn、及びSiから群から選択された少なくとも1つであり、必ずFeを含み、T全体に対するFeの含有量が80mass%以上である)の組成を有する。Bに対するTのmol比([T]/[B])は14.0超である。磁石表面部のR量は磁石中央部のR量よりも多く、磁石表面部のGa量は磁石中央部のGa量よりも多い。磁石表面部のBに対するTのmol比([T]/[B])は磁石中央部のBに対するTのmol比([T]/[B])よりも高い。', '根据本发明的基于RTB的烧结磁体,R:27mass%或更高,37质量%以下(R是稀土元素中的至少一个,总是总是至少一个ND和PR), B:0.75mass%超过0.97质量%,Ga:0.1质量%以上1.0质量%以下,Cu:0质量%或更高1.0质量%以下,T:61.03质量%以上(来自Fe, Co,Al,Mn和Si,其中至少一种选自选自,务必包括Fe,并且具有用于整个T.20质量%以上的Fe含量的组成。T至B的Mo比([t] / [b])大于14.0。磁体表面部分的R的量大于磁体的中心部分的R的量,并且磁体表面的Ga的量大于磁体的中心部分中的Ga的量。磁体表面部分([T] / [B])的T至B的Mo比高于磁体的中心部分的高于T mo比([t] / [b])。', 'JP2018527252', 1511971200, 'JP6380724B1', 1535472000, 1535472000, NULL, 1533830400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 50, 3, 0, 0, 0, NULL, NULL, NULL, '2016233929 | 2016233930 | 2016251306', 'JP | JP | JP', 1480521600, 7, 7, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '右田 勝則', NULL, 'JP2014225623A | WO2007102391A1 | WO2013008756A1 | WO2016133071A1 | WO2016133080A1', NULL, NULL, 1, '\\20220510\\bfa77dd9d37f477483541c7bcbbeecab.png', NULL, NULL, 1, NULL, NULL, 21, NULL, NULL, NULL, 40222, 40224, 40223, 7);
INSERT INTO `os_patent` VALUES (23532, 'R-T-B sintered magnet and production method therefor', 'R-T-B烧结磁铁及其制造方法', 'US10916373B2', 'A sintered R-T-B based magnet composition includes: R: not less than 27 mass % and not more than 37 mass % (R is at least one rare-earth element which always includes at least one of Nd and Pr), B: not less than 0.75 mass % and not more than 0.97 mass %, Ga: not less than 0.1 mass % and not more than 1.0 mass %, Cu: not less than 0 mass % and not more than 1.0 mass %, and T: 61.03 mass % or more (where T is at least one selected from Fe, Co, Al, Mn and Si and always includes Fe, such that the Fe content is 80 mass % or more in the entire T). [T]/[B] is greater than 14.0. An R amount is greater in the surface than in the center, and a Ga amount is greater in the surface than in the center. [T]/[B] in the surface is higher than [T]/[B] in the center.', 'RTB系烧结磁体组合物包括:R:27质量%以上且37质量%以下(R是至少一种稀土元素,其总是包含Nd和Pr中的至少一种),B:不少于 0.75质量%以上且0.97质量%以下; Ga:0.1质量%以上且1.0质量%以下; Cu:0质量%以上且1.0质量%以下; T:61.03质量%以上。 (其中T是选自Fe,Co,Al,Mn和Si中的至少一种,并且总是包含Fe,使得Fe含量在整个T中为80质量%以上)。 [T] / [B]大于14.0。 表面中的R量大于中心,而表面中的Ga量大于中心。 表面的[T] / [B]高于中心的[T] / [B]。', 'US16/465585', 1511971200, 'US10916373B2', 1612800000, 1571846400, NULL, 1612800000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 39, 3, 0, 0, 0, NULL, NULL, NULL, '2016233929 | 2016233930 | 2016251306', 'JP | JP | JP', 1480521600, 7, 7, NULL, NULL, 15, 0, 0, 0, 1, NULL, '869', NULL, 'SU, XIAOWEI', NULL, 'JP2014225623A | US20080286595A1 | US20100231338A1 | US20120280775A1 | US20140132377A1 | US20140314612A1 | US20150170810A1 | US20160042847A1 | US20180025819A1 | US20180047504A1 | WO2007102391A1 | WO2013008756A1 | WO2014157448A1 | WO2016133071A1 | WO2016133080A1', NULL, 'Official Communication issued in International Patent Application No. PCT/JP2017/043058, dated Feb. 27, 2018.', 1, '\\20220510\\f3643f60c46a431a8df43b427ad05e4f.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 40222, 40224, 40223, 7);
INSERT INTO `os_patent` VALUES (23533, 'R-T-B系焼結磁石の製造方法', '制造R-T-B基烧结磁体的方法', 'JP6414653B1', 'R-T-B系焼結磁石素材、RH化合物(RHフッ化物、RH酸化物、RH酸フッ化物から選ばれる少なくとも一種)及びRL-Ga合金を準備する。焼結磁石素材は、R:27.5〜35.0質量%、B:0.80〜0.99質量%、Ga:0〜0.8質量%、M:0〜2質量%(MはCu、Al、Nb、Zrの少なくとも一種)、T:60質量%以上を含有する。焼結磁石素材表面の少なくとも一部にRH化合物の少なくとも一部及びRL-Ga合金の少なくとも一部を接触させ、700℃以上950℃以下の温度で第一の熱処理を実施することで焼結磁石素材に含有されるRH量を0.05質量%以上0.40質量%以下増加させる拡散工程と、450℃以上750℃以下の温度で前記第一の熱処理温度よりも低い温度で第二の熱処理を実施する。', '制备基于R-T-B的烧结磁体材料，RH化合物（选自RH氟化物，RH氧化物和RH氟氧化物中的至少一种）和RL-Ga合金。 烧结磁体材料为R：27.5至35.0质量％，B：0.80至0.99质量％，Ga：0至0.8质量％，M：0至2质量％（M为Cu，Al，Nb和Zr中的至少一种。  ），T：60质量％以上。 使至少一部分RH化合物和至少一部分RL-Ga合金与烧结磁体材料的至少一部分表面接触，并且第一热处理在700°C以上且950°C以下的温度下进行。 扩散步骤是将原料中所含的RH的量增加0.05质量％以上且0.40质量％以下，并在450℃以上且750℃以下的温度和低于第一热处理温度的温度下进行第二热处理。', 'JP2018540885', 1517328000, 'JP6414653B1', 1540915200, 1540915200, NULL, 1539273600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 18, 1, 0, 0, 0, NULL, NULL, NULL, '2017015394', 'JP', 1485792000, 9, 9, NULL, NULL, 3, 0, 0, 0, 0, NULL, NULL, NULL, '右田 勝則', NULL, 'WO2007102391A1 | WO2016039352A1 | WO2016133071A1', NULL, NULL, 1, '\\20220510\\f9944550068240c7b3484698e972748d.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 40225, 40227, 40226, 9);
INSERT INTO `os_patent` VALUES (23534, 'R-T-B系焼結磁石の製造方法', '制造R-T-B基烧结磁体的方法', 'JP6414654B1', 'R1-T-B系焼結磁石素材、R2-Ga合金を準備する。焼結磁石素材は、R:27.5〜35.0質量%、B:0.80〜0.99質量%、Ga:0〜0.8質量%、M:0〜2質量%(MはCu、Al、Nb、Zrの少なくとも一種)、T:60質量%以上を含有する。焼結磁石素材表面の少なくとも一部にR2-Ga合金の少なくとも一部を接触させ、700℃以上950℃以下の温度で第一の熱処理を実施することで焼結磁石素材に含有されるRH量を0.05質量%以上0.40質量%以下増加させる拡散工程と、450℃以上750℃以下の温度で、かつ前記第一の熱処理温度よりも低い温度で第二の熱処理を実施する。', '制备基于R1-T-B的烧结磁体材料和R2-GA合金。烧结磁体材料为R:27.5至35.0质量%,B:0.80至0.99重量%,Ga:0至0.8重量%,M:0至2重量%(m是铜,Al中的至少一个含有Nb,Zr),T:60质量%或更多。烧结磁体材料表面的至少一部分与R 2 -GA合金的至少一部分接触,并通过在700°的温度下进行第一热处理来接触烧结磁体材料中的RH的量C.以上和950℃或更少。在450℃或更高的温度下,在0.05质量%以上或更高,0.40质量%或更低的温度下进行第二热处理。 。或更少,并且在低于第一热处理温度的温度下。', 'JP2018540896', 1517328000, 'JP6414654B1', 1540915200, 1540915200, NULL, 1539273600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 17, 1, 0, 0, 0, NULL, NULL, NULL, '2017015395', 'JP', 1485792000, 10, 10, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, '右田 勝則', NULL, 'WO2007102391A1 | WO2013002170A1 | WO2016039352A1 | WO2016133071A1', NULL, NULL, 1, '\\20220510\\63f7de5a927e4b14b2dc72a17a986cd4.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 40228, 40230, 40229, 11);
INSERT INTO `os_patent` VALUES (23535, 'Method for producing R-T-B sintered magnet', 'R-T-B烧结磁铁的制造方法', 'US10643789B2', 'A sintered R1-T-B based magnet work and an R2-Ga alloy are provided. The sintered magnet work contains R: 27.5 to 35.0 mass %, B: 0.80 to 0.99 mass %, Ga: 0 to 0.8 mass %, M: 0 to 2 mass % (where M is at least one of Cu, Al, Nb and Zr), and T: 60 mass % or more. A diffusion step of, while keeping at least a portion of the R2-Ga alloy in contact with at least a portion of a surface of the sintered magnet work, performing a first heat treatment at a temperature which is not lower than 700° C. and not higher than 950° C. to increase the RH amount contained in the sintered magnet work by not less than 0.05 mass % and not more than 0.40 mass %, is performed; and a second heat treatment is performed at a temperature which is not lower than 450° C. and not higher than 750° C. but which is lower than the temperature of the first heat treatment.', '提供了一种烧结的R1-T-B基磁体和R2-Ga合金。 烧结磁体制品包含R：27.5至35.0质量％，B：0.80至0.99质量％，Ga：0至0.8质量％，M：0至2质量％（其中M是Cu，Al，Nb和C中的至少一种）。  Zr），T：60质量％以上。 在使R 2 -Ga合金的至少一部分与烧结磁体的表面的至少一部分接触的同时，在不低于700℃的温度下进行第一热处理的扩散步骤。 在不高于950℃的温度下进行以使烧结磁体中包含的RH量增加0.05质量％以上且0.40质量％以下。 在不低于450℃且不高于750℃但是低于第一热处理的温度的温度下进行第二热处理。', 'US16/481085', 1517328000, 'US10643789B2', 1588608000, 1575475200, NULL, 1588608000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, '2017015395', 'JP', 1485792000, 10, 10, NULL, NULL, 15, 0, 0, 0, 1, NULL, '869', NULL, 'KIM, PAUL D', NULL, 'EP2667391A1 | EP3503130A1 | US20080286595A1 | US20140120248A1 | US20170263380A1 | US20180025819A1 | US20180047504A1 | US20190172637A1 | US20190214191A1 | US20190214192A1 | WO2007102391A1 | WO2013002170A1 | WO2016039352A1 | WO2016133071A1 | WO2016133080A1', NULL, 'Official Communication issued in International Patent Application No. PCT/JP2018/003089, dated May 15, 2018. cited by applicant.', 1, '\\20220510\\67863de1d2404b4aa9abfcf29ba95466.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 40228, 40230, 40229, 11);
INSERT INTO `os_patent` VALUES (23536, 'Method for producing R-T-B sintered magnet', 'R-T-B烧结磁铁的制造方法', 'US11037724B2', 'A method of producing a sintered R-T-B based magnet includes providing a sintered R-T-B based magnet work, an RH compound (at least one selected from RH fluorides, RH oxides, and RH oxyfluorides), and an RL-Ga alloy, where the sintered magnet work contains R: 27.5 to 35.0 mass %, B: 0.80 to 0.99 mass %, Ga: 0 to 0.8 mass %, M: 0 to 2 mass % (where M is at least one of Cu, Al, Nb and Zr), and T: 60 mass % or more; a diffusion step of, while keeping the RH compound and the RL-Ga alloy in contact with a surface of the sintered magnet work, performing a first heat treatment between 700° C. and 950° C. to increase the RH amount contained in the sintered magnet work by between 0.05 mass % and 0.40 mass %; and performing a second heat treatment between 450° C. and 750° C. but which is lower than the first heat treatment.', '一种制造烧结RTB基磁体的方法包括提供烧结的RTB基磁体工作,RH化合物(选自Rh氟化物,RH氧化物和Rh氧化氢)的RH化合物和RL-GA合金,其中烧结磁体工作含有R:27.5至35.0质量%,B:0.80至0.99质量%,Ga:0至0.8质量%,m:0至2质量%(其中M是Cu,Al,Nb和Zr中的至少一种),以及T:60质量%或更多;一种扩散步骤,同时将RH化合物和RL-GA合金与烧结磁体工作的表面接触,在700℃和950℃之间进行第一热处理以增加所含的RH量烧结磁体在0.05质量%和0.40质量%之间工作;在450℃和750℃之间进行第二热处理,但其低于第一热处理。', 'US16/481084', 1517328000, 'US11037724B2', 1623686400, 1609344000, NULL, 1623686400, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, '2017015394', 'JP', 1485792000, 9, 9, NULL, NULL, 12, 0, 0, 0, 2, NULL, '869', NULL, 'SU, XIAOWEI', NULL, 'EP3503130A1 | JP2016034024A | US20080286595A1 | US20140132377A1 | US20170183765A1 | US20170263380A1 | US20170278602A1 | US20180025819A1 | WO2007102391A1 | WO2015163397A1 | WO2016039352A1 | WO2016133071A1', NULL, 'Official Communication issued in International Patent Application No. PCT/JP2018/003088, dated May 15, 2018. | Official Communication issued in corresponding European Patent Application No. 18747505.8, dated Apr. 7, 2021.', 1, '\\20220510\\e10bce2085c944f1adbb103017ea7223.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 40225, 40227, 40226, 9);
INSERT INTO `os_patent` VALUES (23537, 'Method for producing r-t-b sintered magnet', 'r-t-b烧结磁铁的制造方法', 'EP3579256B1', 'A sintered R1-T-B based magnet work and an R2-Ga alloy are provided. The sintered magnet work contains R: 27.5 to 35.0 mass%, B: 0.80 to 0.99 mass%, Ga: 0 to 0.8 mass%, M: 0 to 2 mass% (where M is at least one of Cu, Al, Nb and Zr), and T: 60 mass% or more. A diffusion step of, while keeping at least a portion of the R2-Ga alloy in contact with at least a portion of a surface of the sintered magnet work, performing a first heat treatment at a temperature which is not lower than 700°C and not higher than 950°C to increase the RH amount contained in the sintered magnet work by not less than 0.05 mass% and not more than 0.40 mass%, is performed; and a second heat treatment is performed at a temperature which is not lower than 450°C and not higher than 750°C but which is lower than the temperature of the first heat treatment.', '提供了一种基于R1-T-B的烧结磁体和R2-Ga合金。 烧结磁体制品包含R：27.5至35.0质量％，B：0.80至0.99质量％，Ga：0至0.8质量％，M：0至2质量％（其中M是Cu，Al，Nb和C中的至少一种）。  Zr），T：60质量％以上。 一种扩散步骤，在使至少一部分R2-Ga合金与烧结磁体工件的至少一部分表面接触的同时，在不低于700°C的温度下进行第一热处理，并且 进行950℃以上的加热，使烧结磁铁制品中所含的RH量增加0.05质量％以上0.40质量％以下。 第二热处理在不低于450℃且不高于750℃但低于第一热处理的温度的温度下进行。', 'EP2018747093', 1517328000, 'EP3579256B1', 1636473600, 1575993600, NULL, 1636473600, '欧洲专利局', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 23, 1, 0, 0, 0, NULL, NULL, NULL, '2017015395', 'JP', 1485792000, 10, 10, NULL, NULL, 7, 0, 0, 0, 0, NULL, '901', NULL, NULL, NULL, 'EP2667391A1 | EP3503130A1 | US20160133071A1 | WO2007102391A1 | WO2013002170A1 | WO2016039352A1 | WO2016133080A1', NULL, NULL, 1, '\\20220510\\567e7fc603224ec1ac4b41b14696c196.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, '有效:DE,BE,LU,FR,MC,GB,IE,CH,AT,LI | 失效:NL | 未确认:RS,NO,FI,PT,BG,DK,LT,LV,HR,HU,SE,SI,SK,SM,MK,EE,MT,IS,IT,GR,AL,ES,CY,CZ,PL,RO,TR', 40228, 40230, 40229, 11);
INSERT INTO `os_patent` VALUES (23538, 'VERFAHREN ZUR HERSTELLUNG EINES GESINTERTEN R-T-B-MAGNETEN', '制造烧结R-T-B磁体的方法', 'DE602018026491T2', 'In this method for producing an R-T-B sintered magnet, an R1-T-B sintered magnet material and an R2-Ga alloy are prepared. The sintered magnet material contains 27.5-35.0 mass% of R, 0.80-0.99 mass% of B, 0-0.8 mass% of Ga, 0-2 mass% of M (M is at least one of Cu, Al, Nb, and Zr), and 60 mass% or more of T. The following are performed in the method: a diffusion step in which at least part of the R2-Ga alloy is brought into contact with at least part of the surface of the sintered magnet material and the amount of RH included in the sintered magnet material is increased by 0.05-0.40 mass% by performing first heat treatment at a temperature of 700-950°C; and second heat treatment performed at a temperature that is in the range of 450-750°C and lower than the temperature of the first heat treatment.', '在该制造R-T-B烧结磁体的方法中，制备R1-T-B烧结磁体材料和R2-Ga合金。烧结磁体材料含有27.5-35.0质量％的R，0.80-0.99质量％的B，0-0.8质量％的Ga，0-2质量％的M（M是Cu，Al，Nb和M中的至少一种）。在以下方法中进行以下操作：在扩散步骤中，使至少部分R2-Ga合金与烧结磁体材料的至少一部分表面接触通过在700-950℃的温度下进行第一热处理，烧结磁体材料中包含的RH量增加0.05-0.40质量％;第二热处理在450-750℃的温度范围内进行，并且低于第一热处理的温度。', 'DE602018026491', 1517328000, 'DE602018026491T2', 1636473600, 1636473600, NULL, 1636473600, '德国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'T2', NULL, NULL, 31, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '895', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 40231, 40230, 40232, 11);
INSERT INTO `os_patent` VALUES (23539, 'R-T-B系焼結磁石の製造方法', '制造R-T-B基烧结磁体的方法', 'JP6432718B1', 'Co:3.5〜8.5質量%、B:0.2〜0.8質量%、R:33〜69質量%、T:10〜60質量%、Cu:0.8〜3質量%、Ga:1.8〜10質量%を含み、下記(1)を満足する添加合金粉末を準備する工程、B:0.91〜1.1質量%、R:28.5〜33質量%、T:64〜70質量%、Ga:0.1〜0.4質量%を含む主合金粉末を準備する工程、添加合金粉末1〜16質量%と主合金粉末82〜99質量%を含む混合合金粉末を準備する工程、混合合金粉末を成形して成形体を得る工程、成形体を焼結して焼結体を得る工程および焼結体を熱処理する工程を含むR-T-B系焼結磁石の製造方法である。\n\n14×[B]/10.8≦[T]/55.85≦14×[B]/10.8×2···(1)\n\n[B]、[T]は添加合金粉末中のB、Tの含有量(質量%)である。', 'CO:3.5至8.5重量%,B:0.2至0.8重量%,R:33至69重量%,T:10至60重量%,Cu:0.8至3重量%,Ga:1.8至10重量重量%,制备满足(1),B:0.91至1.1重量%,R:28.5至33重量%,T:64至70重量%,Ga:0.1至0.4%(重量)重量的合金粉末。制备粉末的方法,制备含有1至16质量%的加入合金粉末的混合合金粉末,以及82至99质量%的主金粉末,形成模塑体,并计算模塑身体。获得烧结体的过程和制造基于RTB的烧结磁体的方法,包括烧结体的热处理步骤。\n\n14×[b] / 10.8 [t] /55.85≤14×[b] /10.8x2··(1)\n\n[B]和[T]是添加合金粉末中的B和T含量(重量%)。', 'JP2018538787', 1521648000, 'JP6432718B1', 1543939200, 1543939200, NULL, 1542297600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 19, 3, 0, 0, 0, NULL, NULL, NULL, '2017065035', 'JP', 1490716800, 5, 5, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '右田 勝則', NULL, 'JP2016086078A | JP2016184689A | JP2017017121A | JP6090550B1 | WO2013008756A1', NULL, NULL, 1, '\\20220510\\faaaec2dc45f4686a18b85cf71ac6223.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 40233, 40235, 40234, 5);
INSERT INTO `os_patent` VALUES (23540, 'R-T-B系焼結磁石の製造方法', 'r-t-b基烧结磁体的制造方法', 'JP2019169542A', '【課題】R-T-B系焼結磁石の磁石特性を向上させる製造方法を提供する。\n\n【解決手段】本R-T-B系焼結磁石の製造方法は、R-T-B系焼結磁石のためのグリーン成形体を用意する工程S10と、アトマイズ法によって作製されたPr-Ga合金粉末を用意する工程S20と、グリーン成形体の表面の少なくとも一部にPr-Ga合金粉末を塗布する工程S30と、Pr-Ga合金粉末が表面の少なくとも一部に塗布されたグリーン成形体を焼結する焼結工程S40と、を包含する。\n\n【選択図】図2', '提供一种可以增强基于R-T-B的烧结磁体的磁性能的制造方法。 步骤S20，制备通过雾化法制备的Pr-Ga合金粉末。 步骤S30，将Pr-Ga合金粉末施加到生坯的至少一部分表面上； 烧结步骤S40是烧结其表面至少部分被Pr-Ga合金粉末覆盖的生压坯。选图：图2', 'JP2018054744', 1521648000, 'JP2019169542A', 1570032000, 1570032000, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 15, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 5, 4, 4, 4, 0, NULL, NULL, NULL, NULL, NULL, 'JP2014086529A | JP2014225623A | WO2013008756A1 | WO2016039353A1 | WO2017018291A1', 'CN110828090A | WO2021098223A1 | WO2021098224A1 | WO2021098225A1', NULL, 1, '\\20220510\\a49c30b289b34fbdb30c43a4288e490b.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 40236, 40238, 40237, 1);
INSERT INTO `os_patent` VALUES (23541, '希土類磁石用合金', '稀土磁铁合金', 'JP2019169507A', '【課題】磁気特性および熱安定性が向上した異方性磁粉を高効率に提供する。\n\n【解決手段】本開示の希土類磁石用合金は、主相および1種以上の副相を有する希土類磁石用合金であって、合金全体の組成が下記の組成式(1)によって表され、\n\nR(Fe,Co)w-zTizCuαSnβ(1)\n\nRは希土類元素の少なくとも1種であり、w、z、およびαは、それぞれ8≦w≦13、\n\n0.42≦z<0.70、0.35≦α≦0.82、および0<β≦0.10を満足す。\n\n【選択図】図1', '解决的问题：为了高效地提供具有改善的磁特性和热稳定性的各向异性磁粉。\n\n 本公开的用于稀土磁体的合金是具有主相和一个或多个子相的稀土磁体的合金，整个合金的组成由以下组成式（1）表示：\n\n R（铁，钴）-钛 ž铜 α锡 β （1）\n\n R是稀土元素中的至少一种，w，z和α分别为8≤w≤13。\n\n 满足0.42≤z＜0.70，满足0.35≤α≤0.82，并且满足0 ＜β≤0.10。\n\n [选型图]图1', 'JP2018054054', 1521648000, 'JP2019169507A', 1570032000, 1570032000, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP1989076703A | JP1992322406A | JP2001189206A | JP2015156436A | JP2017112300A | WO2016162990A1', NULL, NULL, 1, '\\20220510\\709cbce2606e46d091a4e0cef617ea87.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40239, 40241, 40240, 1);
INSERT INTO `os_patent` VALUES (23542, 'R-T-B系焼結磁石及びその製造方法', '基于R-T-B的烧结磁体和制造方法', 'JP7020224B2', '【課題】重希土類元素の含有量を低減しつつ、高いBr及び高いHcJを有するR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】本開示のR-T-B系焼結磁石の製造方法は、R1-T1-B系焼結体を準備する工程と、R2-Ga-Ni系合金を準備する工程と、前記焼結体の表面の少なくとも一部に前記合金の少なくとも一部を接触させ、真空又は不活性ガス雰囲気中、450℃以上1100℃以下の温度で熱処理を実施する工程とを含む。\n\n【選択図】図1', '为了提供一种具有高带高H的RTB基烧结磁体的生产方法，同时又减少了重稀土元素的含量。 制备R 2 -Ga-Ni基合金的步骤，和使合金的至少一部分与烧结体的表面接触，并在450℃至1100℃的温度下进行热处理的步骤。  ，在真空或惰性气体气氛中。选图：图1', 'JP2018054053', 1521648000, 'JP7020224B2', 1644940800, 1570032000, NULL, 1644163200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 21, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2017162900A | JP2018028123A | WO2011070827A1 | WO2016093173A1 | WO2017018291A1', NULL, NULL, 1, '\\20220510\\e85ac7545b2446019d7c788d956b1b14.png', NULL, NULL, 1, NULL, NULL, 11, NULL, NULL, NULL, 40242, 40244, 40243, 2);
INSERT INTO `os_patent` VALUES (23543, 'R-T-B系焼結磁石の製造方法', '基于R-T-B基烧结磁体的方法', 'JP7021577B2', '【課題】RHの含有量を低減しつつ、高いHcJと高いHkを有するR-T-B系焼結磁石を製造する。\n\n【解決手段】所定の組成を有するR-T-B系焼結磁石の製造方法であって、合金粉末を準備する工程と、成形体を得る成形工程と、前記成形体を、1010℃〜1030℃の範囲内にある第1焼結温度で、12時間〜36時間の範囲内にある第1焼結時間で加熱して、第1焼結体を得る第1焼結工程と、前記第1焼結体を、990℃〜1020℃の範囲内にあり、かつ前記第1焼結温度よりも10℃以上低い第2焼結温度で、17時間〜41時間の範囲にあり、かつ前記第1焼結時間よりも5時間以上長い第2焼結時間で加熱して第2焼結体を得る第2焼結工程と、前記第2焼結体を、400℃〜800℃の範囲内にある熱処理温度で加熱する熱処理工程と、を含む、R-T-B系焼結磁石の製造方法。\n\n【選択図】なし', '制造具有高H，高H的手的RTB基烧结磁体，同时减少RH的含量。  ; 获得压块的形成步骤； 第一烧结步骤，通过在1010℃至1030℃的第一烧结温度下将压块加热12小时至36小时的第一烧结时间来获得第一烧结体； 第二烧结步骤，其通过在比第一烧结温度低10℃且在990℃至1020℃以内的第二烧结温度下加热第一烧结体并在比第一烧结时间长的第二烧结时间内加热第一烧结体来获得第二烧结体。 烧结时间缩短5小时，且在17小时至41小时之间； 热处理步骤是将第二烧结体在400℃至800℃的热处理温度下加热。', 'JP2018055048', 1521648000, 'JP7021577B2', 1645027200, 1570032000, NULL, 1644249600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP1988252402A | JP1995335468A | JP2000232012A | JP2003045710A | JP2016184689A | JP2018028123A', NULL, NULL, 1, '\\20220510\\8facce8f70434a07b5caa4c05ed265a3.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 40245, 40247, 40246, 3);
INSERT INTO `os_patent` VALUES (23544, 'R-T-B系焼結磁石の製造方法', '基于R-T-B基烧结磁体的方法', 'JP7021578B2', '【課題】高い保磁力HcJを有するR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】R2:80〜95質量%、Ga:5〜20質量%、Fe:0〜1質量%を含むR-Ga合金を準備する工程、R-Ga合金を水素雰囲気で加熱して水素吸蔵R-Ga合金粗粉末を得る水素吸蔵工程、水素吸蔵R-Ga合金粗粉末が水素を吸蔵した状態で粉砕しメジアン径d50が1.5〜6μmのR-Ga合金粉末を準備する工程、メジアン径d50が3.5〜7μmの主合金粉末を準備する工程、R-Ga合金粉末と主合金粉末を、混合合金粉末に対してR-Ga合金粉末を1〜5質量%で混合して混合合金粉末を準備する工程、混合合金粉末を成形して成形体を得る工程、成形体を焼結し焼結体を得る工程、焼結体に熱処理を施す工程を含み、R-Ga合金粉末と主合金粉末が下記式を満足する、R-T-B系焼結磁石の製造方法。\n\n(主合金粉末のd50)×0.9>(R-Ga合金粉末のd50)\n\n【選択図】図1', '要解决的问题：提供具有高矫顽力HcJ的R-T-B基烧结磁体的制造方法。\n\n一个R2：80〜95重量％，Ga为5〜20重量％，Fe：制备含有0-1％（重量），氢在氢气氛中加热所述R-Ga合金一个R-Ga合金获得闭塞R-Ga合金粗粉的步骤氢存储步骤，储氢R-Ga合金粗粉末是中值粒径（d50）粉碎，同时吸收氢以制备R-Ga合金粉末1.5〜6Myuemu，中值粒径d50是3。制备初级合金粉末5〜7微米时，R-Ga合金粉末与主合金粉末，R-Ga合金粉末与1-5％（重量）的混合物中以制备混合合金粉末混合的合金粉末步骤通过模塑混合合金粉末，以获得烧结的烧结成型体，其包括向所述烧结体中，R-Ga合金粉末与下面的主要合金粉末进行热处理的步骤以获得一个模制产品一种制造满足下式的RTB基烧结磁体的方法。\n\n（主合金粉末的D50）×0。9>（R-Ga合金粉末的d50）\n\n背景技术', 'JP2018055111', 1521648000, 'JP7021578B2', 1645027200, 1541606400, NULL, 1644249600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 25, 4, 0, 0, 0, NULL, NULL, NULL, '2017067619', 'JP', 1490803200, 2, 2, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP1994188113A | JP1995130522A | JP1995176414A | JP2016184689A | WO2015020182A1', NULL, NULL, 1, '\\20220510\\54b5d446c3974049b5f173085875f891.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 40248, 40250, 40249, 2);
INSERT INTO `os_patent` VALUES (23545, '希土類磁石用合金', '稀土磁铁合金', 'JP2019044259A', '【課題】磁気特性及び熱安定性が向上した異方性磁粉を高効率に提供する。\n\n【解決手段】本開示の希土類磁石用合金は、例示的な実施形態において、希土類磁石用合金であって、組成がR(Fe,Co)w-zTizCuαで表され、Rは希土類元素の少なくとも1種であり、w、z、及びαは、それぞれ、8≦w≦12、0.42≦z<0.70、及び0.40≦α≦0.70を満足する。\n\n【選択図】図1B', '具有改善的磁性和热稳定性的各向异性磁性粉末具有高效率。\n\n在示例性实施方案中，本发明的稀土磁体用合金是稀土磁体用合金，其中组成为R（Fe，Co）wzTi  < R是稀土元素中的至少一种，w，z和α分别为8≤w≤12,0.42≤z<0.70，满足0.40≤α≤0.70。\n\n[选定图]图1B', 'JP2018055904', 1521734400, 'JP2019044259A', 1553184000, 1553184000, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 18, 2, 0, 0, 0, NULL, NULL, NULL, '2017166440', 'JP', 1504108800, 1, 1, NULL, NULL, 6, 1, 1, 1, 0, NULL, NULL, NULL, NULL, NULL, 'JP1989076703A | JP1992322406A | JP2001189206A | JP2015156436A | JP2017112300A | WO2016162990A1', 'JP2021052052A', NULL, 1, '\\20220510\\6e4a3df60e814130a09a461df4a22e4a.png', NULL, NULL, 1, NULL, NULL, 14, NULL, NULL, NULL, 40251, 40253, 40252, 1);
INSERT INTO `os_patent` VALUES (23546, '希土類元素のシュウ酸塩の製造方法', '稀土元素草酸盐的生产方法', 'JP2019173148A', '【課題】 ホウ素を含む希土類元素の酸化物から希土類元素のシュウ酸塩を、コストをかけずに製造する方法を提供すること。\n\n【解決手段】 ホウ素を含む希土類元素の酸化物を塩酸に溶解した後、得られた希土類元素の塩酸溶液にシュウ酸を沈殿剤として加えることで希土類元素のシュウ酸塩からなる沈殿物を得た際に生じる塩酸廃液から塩酸を再生し、再生した塩酸を新たなホウ素を含む希土類元素の酸化物を溶解するために用いて希土類元素のシュウ酸塩を製造する。塩酸廃液から塩酸を再生することにより、使用する塩酸の総量を削減することができるので、ホウ素を含む希土類元素の酸化物からコストをかけずに希土類元素のシュウ酸塩を製造することができる。\n\n【選択図】 なし', '本发明提供一种由含硼的稀土元素的氧化物免费生产稀土元素的草酸盐的方法。 通过将含硼的稀土元素的氧化物溶解在盐酸中，然后将草酸作为沉淀剂添加到所得的稀土元素的盐酸溶液中，从而获得稀土元素。 再生的盐酸用于溶解含有硼的稀土元素的新氧化物以产生稀土元素的草酸盐。 由于可以通过从盐酸废液中再生盐酸来减少盐酸的总量，因此可以免费从含有硼的稀土元素的氧化物中生产稀土元素的草酸盐。 没有', 'JP2018066295', 1522252800, 'JP2019173148A', 1570636800, 1570636800, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 8, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP1984173182A | JP1985122718A | JP1988021220A | JP1993302188A | JP2006131982A | JP2015193931A | JP2018003089A | WO2013018710A1', NULL, NULL, 1, '\\20220510\\95456f6413d3424882cb0f5898096817.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40254, 40256, 40255, 1);
INSERT INTO `os_patent` VALUES (23547, '希土類遷移金属合金粉末の製造方法', '稀土过渡金属合金粉末的生产方法', 'JP2019206742A', '【課題】湿式処理の際に合金表面の酸化劣化を抑えることができる希土類遷移金属合金粉末の製造方法を提供する。\n\n【解決手段】希土類酸化物粉末と遷移金属粉末を含む原料物質に、アルカリ金属、アルカリ土類金属及びこれらの水素化物から選ばれる少なくとも1種の還元剤を所定の割合で混合する第1の工程と、この混合物を不活性ガス雰囲気中で加熱し還元拡散する第2の工程と、得られた反応生成物を洗浄液中に投入して崩壊させる湿式処理を行い、反応生成物から還元剤を低減させた後、洗浄液の合金スラリーに酸と洗浄液を添加する酸洗浄を行い、その後、洗浄液を投入し酸を除去する第3の工程を含む、希土類遷移金属合金粉末の製造方法であって、洗浄液として、水/(グリコール+水)で規定される水含有率が0〜50質量%のグリコールを用いることを特徴とする希土類遷移金属合金粉末の製造方法などを提供する。\n\n【選択図】なし', '提供一种能够抑制在湿法过程中合金表面氧化降解的稀土过渡金属合金粉末的制造方法。解决方案：一种稀土过渡金属合金粉末的制造方法包括：混合的第一步 包含稀土氧化物粉末和过渡金属粉末以及预定比例的选自碱金属，碱土金属和其氢化物的至少一种还原剂的原料； 第二步是通过在惰性气体气氛中加热来减少和扩散混合物； 第三步，进行湿法处理，将所得反应产物倒入清洗液中，使之坍塌，在减少反应产物中的还原剂后，向清洗液的合金浆料中加入酸和清洗液，进行酸洗， 然后输入清洁液除去酸。 稀土过渡金属合金粉末的制造方法以水/（乙二醇+水）的含水率为0〜50质量％的二醇作为清洗液使用。', 'JP2018103404', 1527609600, 'JP2019206742A', 1575475200, 1575475200, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 3, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 24, 4, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 2, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2017011276A | JP2017147434A', NULL, NULL, 1, '\\20220510\\23c1d355264749f6a776b665bdbebed0.png', NULL, NULL, 2, NULL, NULL, 8, NULL, NULL, NULL, 40257, 40259, 40258, 2);
INSERT INTO `os_patent` VALUES (23548, '材料組織の解析方法および解析システム', '材料组织的方法和分析系统', 'JP6988707B2', '【課題】試料の断面画像から、主相、粒界相、三重点粒界相の隣接関係を含めた、より複雑な組織特徴を数値化する。\n\n【解決手段】情報処理装置によって、結晶粒子である主相と、主相と主相とに挟まれた粒界相を含む試料断面の画像を入力画像とする画像入力工程を行ない、入力画像から主相を領域で示した主相画像と、粒界相を線で示した粒界相画像と、粒界相の一部である三重点粒界相を領域で示した三重点粒界相画像を生成する画像処理工程を行ない、主相画像の各主相の組織特徴を解析し、主相データベースを生成する主相解析工程を行い、粒界相画像の各粒界相の組織特徴を解析し、粒界相データベースを生成する粒界相解析工程を行い、三重点粒界相画像の各三重点粒界相の組織特徴を解析し、三重点粒界相データベースを生成する三重点粒界相解析工程を行い、主相と粒界相と三重点粒界相の位置関係を表す隣接関係データベースを生成する隣接関係解析工程を行う。\n\n【選択図】図2A', '为了从材料的横截面图像数字化包括主相，晶界相和三点晶界相在内的更复杂的成分特征。解决方案：信息处理设备执行图像输入处理，以使用 作为输入图像，是包括作为晶粒的主相和被主相夹在中间的晶界相的材料的截面的图像，用于从输入图像生成表示α的主相图像的图像处理过程。 主相，用实线表示晶界相的晶界相图像，表示作为具有区域的晶相的一部分的三点晶界相的三点晶界相图像，主 用于分析主相图像中每个主相的成分特征以生成主相数据库的相分析过程，用于分析每个gr的成分特征的晶界相分析过程 在边界相中生成晶界相数据库，用于分析每个三点晶界相的成分特征以生成三点晶界相数据库的三点晶界相分析过程以及相邻关系分析过程 用于表示主相，晶界相和三点晶界相之间的位置关系的相邻关系数据库。选图：图2A', 'JP2018113603', 1528905600, 'JP6988707B2', 1641312000, 1576684800, NULL, 1638720000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 22, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 4, 0, 0, 0, 0, NULL, '902', NULL, '藤原 敬利', NULL, 'JP2008191125A | JP2015038950A | JP2017183710A | JP2018036131A', NULL, NULL, 1, '\\20220510\\1069310656ab4f9f9f5d1b92c208bbd0.png', NULL, NULL, 1, NULL, NULL, 15, NULL, NULL, NULL, 40260, 40262, 40261, 2);
INSERT INTO `os_patent` VALUES (23549, 'Method for forming electrolytic copper plating film on surface of rare earth metal-based permanent magnet', '在稀土金属基永磁体表面形成电解镀铜膜的方法', 'US10770224B2', 'An object of the present invention is to provide a novel method for forming an electrolytic copper plating film having excellent adhesion on the surface of a rare earth metal-based permanent magnet. The method of the present invention as a means for achieving the object is characterized in that after a magnet is immersed in a plating solution, a cathode current density of 0.05 A/dm2 to 4.0 A/dm2 for performing an electrolytic copper plating treatment is applied thereto over 10 seconds to 180 seconds to start the treatment.', '本发明的目的是提供一种用于形成在稀土金属基永磁体的表面上具有优异粘附性的电解铜镀膜的新颖方法。 作为用于实现该目的的手段的本发明的方法的特征在于,在将磁体浸入镀液中之后,阴极电流密度为0.05A / dm 2  至4.0 A / dm 2  在10秒至180秒内向其施加用于进行电解镀铜处理的步骤,以开始处理。', 'US16/020650', 1530028800, 'US10770224B2', 1599494400, 1544025600, NULL, 1599494400, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 2, 0, 0, 0, NULL, NULL, NULL, '2010222144 | PCT/JP2011/072366', 'JP | WO', 1285776000, 11, 11, NULL, NULL, 15, 0, 0, 0, 5, NULL, '875', NULL, 'WONG, EDNA', NULL, 'CN101023205A | CN101405435A | JP2002105690A | JP2002126642A | JP2003100536A | JP2006219696A | JP2008031536A | US20030136471A1 | US20050028890A1 | US20060213778A1 | US20070269679A1 | US20080053573A1 | US20080202642A1 | US20090035603A1', NULL, 'Extended European Search Report Issued by the European Patent Office dated Nov. 23, 2017, in copending European Patent Application No. 11829270.5 (8 pages). cited by applicant | International Search Report for International Application No. PCT/JP2011/072366 dated Jan. 10, 2012. cited by applicant. | Office Action dated Mar. 13, 2015, in counterpart CN application 201180047128.8. cited by applicant | Oyamada et al., \"Effectiveness of Stepwise Current Wave Form in USLI Copper Electroplating,\" Journal of the Japan Institute of Electronics Packaging (2002), vol. 5, No. 1, pp. 79-81. (Year: 2002). cited by examiner | Oyamada et al., \"Via-Filling by Copper Electroplating Using Stepwise Current Control,\" Electrochemistry (Tokyo, Japan) [2006], vol. 74, No. 3, pp. 212-215. Abstract only. (Year: 2006). cited by examiner', 1, '\\20220510\\6f437f77b936487daddcac08e01af7c1.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 39625, 39627, 39626, 12);
INSERT INTO `os_patent` VALUES (23550, 'R-T-B系焼結磁石の製造方法', 'r-t-b基烧结磁体的制造方法', 'JP2019169695A', '【課題】R-M合金粉末をR-T-B系焼結磁石表面に存在させて拡散させる方法において、磁気特性を低下させることなく金属溜りの発生を抑え、また粉末を燃えにくくして取り扱いを容易にすることを可能とする製造方法の提供。\n\n【解決手段】本開示のR-T-B系焼結磁石の製造方法は、R-T-B系焼結磁石素材を用意する工程と、R-M(Rは希土類元素のうち少なくとも一種であり、Nd及びPrの少なくとも一方を必ず含む、MはAl、Cu、Zn、Ga、Fe、Co、Niから選ばれる1種以上)合金粉末を用意する工程と、前記R-M合金粉末の粒子表面に平均厚さが0.5μm以上3μm以下のR-OH層を形成する工程と、前記R-OH層を形成したR-M合金粉末を前記R-T-B系焼結磁石素材に塗布する工程と、前記R-OH層を形成したR-M合金粉末を塗布した前記R-T-B系焼結磁石素材に熱処理を行う工程と、を含む。\n\n【選択図】図3', '提供一种将RM合金粉末放置并扩散到RTB类烧结磁铁的表面中的制造方法，该方法可以抑制金属堆积的发生而不会使磁性能变差，并且通过使粉末难以制造而易于处理粉末。 解决方案：一种在此公开的用于制造基于RTB的烧结磁体的方法，包括以下步骤：制备基于RTB的烧结磁体材料；以及制备一种基于RTB的烧结磁体。 制备RM合金粉末（其中R为至少一种稀土元素，总是包含Nd和Pr中的至少一种，M为选自Al，Cu，Zn，Ga，Fe，Co和Ni中的一种或多种元素 ）; 在R-M合金粉末的颗粒表面上形成平均厚度为0.5μm以上且3μm以下的R-OH层。 用其上形成有R-OH层的R-M合金粉末涂覆R-T-B基烧结磁体材料。 对涂有R-OH层的R-M合金粉末涂覆的R-T-B基烧结磁体材料进行热处理。图3', 'JP2018158918', 1535385600, 'JP2019169695A', 1570032000, 1570032000, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 2, 0, 0, 0, NULL, NULL, NULL, '2018054745', 'JP', 1521648000, 1, 2, NULL, NULL, 2, 1, 1, 1, 0, NULL, NULL, NULL, NULL, NULL, 'JP2008263179A | WO2018030187A1', 'JP2021153148A', NULL, 1, '\\20220510\\aaa84912de8f4c47a797c7fbe0107343.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 40263, 40265, 40264, 2);
INSERT INTO `os_patent` VALUES (23551, '金属粉末製造装置、及び金属粉末の製造方法', '金属粉末制造装置和金属粉末的制造方法', 'JP6539793B1', '品質のよい微細な粒径の金属粉末を得ることが可能な、金属粉末製造装置、及び金属粉末製造方法を提供する。\n\n垂下した溶融金属に、超音速の燃焼炎を集中噴射し、集中した前記燃焼炎を噴出集束流にして直下に噴出し、前記噴出集束流を、軸線が鉛直方向から傾斜した粉砕冷却筒の内周面に沿って形成した旋回水流に突入させると共に、前記燃焼炎の集中位置を、前記旋回水流より上方の開放空間中とする。', '一种金属粉末生产装置和能够获得具有良好质量细粒尺寸的金属粉末的金属粉末制造方法和制造金属粉末的方法。 \n\n 在所提出的熔融金属中,聚焦燃烧火焰的超声波火焰,浓缩的燃烧火焰直接喷射并直接喷射下方,并且喷洒的汽缸从射流收集器的垂直方向倾斜。随着枢转水流圆周表面,燃烧火焰的浓度位置被设定为旋转水流以上的开放空间。', 'JP2018568973', 1535990400, 'JP6539793B1', 1562083200, 1562083200, NULL, 1560441600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 16, 3, 0, 0, 0, NULL, NULL, NULL, '2017172411', 'JP', 1504713600, 8, 8, NULL, NULL, 7, 0, 0, 0, 0, NULL, '903', NULL, '河口 展明', NULL, 'JP1998121115A | JP1999080813A | JP1999106805A | JP2014136807A | JP2016204718A | JP2017145442A | JP2017145494A', NULL, NULL, 1, '\\20220510\\b871b5b03dd74f28b8e94f96d5a6395b.png', NULL, NULL, 2, NULL, NULL, 13, NULL, NULL, NULL, 40266, 40268, 40267, 8);
INSERT INTO `os_patent` VALUES (23552, 'Metal powder manufacturing device and metal powder manufacturing method', '金属粉末制造装置及金属粉末制造方法', 'EP3680045A4', 'To provide an apparatus for producing a metal powder and a method of producing a metal powder capable of obtaining a metal powder having a finer particle size of excellent quality. A supersonic combustion flame is intensively injected into a downwardly supplied molten metal, the intensive combustion flame is jetted directly downwardly as a focused jet flow, the focused jet flow thrusts into a turning water flow formed along an inner peripheral surface of a pulverization cooling cylinder whose axis line is inclined from a vertical direction, and an intensive position of the combustion flame is in an open space above the turning water flow.', '本发明提供一种金属粉的制造装置以及该金属粉的制造方法,其能够得到粒径优异且品质优良的金属粉。 将超音速燃烧火焰强力注入向下供应的熔融金属中,随着聚焦射流直接向下方喷射强燃烧火焰,聚焦射流冲入沿粉碎冷却缸内周面形成的转向水流。 轴线从竖直方向倾斜,并且燃烧火焰的集中位置在转向水流上方的开放空间中。', 'EP2018854477', 1535990400, 'EP3680045A4', 1610467200, 1594742400, NULL, NULL, '欧洲专利局', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A4', NULL, NULL, 0, 3, 0, 0, 0, NULL, NULL, NULL, '2017172411', 'JP', 1504713600, 8, 8, NULL, NULL, 4, 0, 0, 0, 0, NULL, '904', NULL, NULL, NULL, 'JP1999080812A | JP2014136807A | JP2016204718A | JP2017145442A', NULL, NULL, 1, '\\20220510\\2c070dbfd8404b29b300cbf9c57bc413.png', NULL, NULL, 2, NULL, NULL, 12, NULL, NULL, NULL, 40266, 40268, 40267, 8);
INSERT INTO `os_patent` VALUES (23553, 'Apparatus for producing metal powder and method of producing metal powder', '金属粉末的制造装置及金属粉末的制造方法', 'US11235390B2', 'To provide an apparatus for producing a metal powder and a method of producing a metal powder capable of obtaining a metal powder having a finer particle size of excellent quality. A supersonic combustion flame is intensively injected into a downwardly supplied molten metal, the intensive combustion flame is jetted directly downwardly as a focused jet flow, the focused jet flow thrusts into a turning water flow formed along an inner peripheral surface of a pulverization cooling cylinder whose axis line is inclined from a vertical direction, and an intensive position of the combustion flame is in an open space above the turning water flow.', '提供一种用于制造金属粉末的装置和制造能够获得具有优异质量优异粒度的金属粉末的金属粉末的方法。超音速燃烧火焰被强烈地注入向下提供的熔融金属中,将密集的燃烧火焰作为聚焦射流直接喷射,聚焦射流流入沿粉碎冷却缸的内周表面形成的转弯水流。轴线从垂直方向倾斜,并且燃烧火焰的密集位置处于转动水流的开放空间中。', 'US16/644915', 1535990400, 'US11235390B2', 1643644800, 1597852800, NULL, 1643644800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 0, 3, 0, 0, 0, NULL, NULL, NULL, '2017172411', 'JP', 1504713600, 8, 8, NULL, NULL, 8, 0, 0, 0, 1, NULL, '905', NULL, 'DEL SOLE, JOSEPH S', 'NGUYEN, THU KHANH T', 'GB2281233A | JP1998121115A | JP1999043707A | JP1999080812A | JP2010090410A | JP2014136807A | JP2016204718A | JP2017145442A', NULL, 'European Extended Search Report dated Dec. 15, 2020 on corresponding European Patent Application No. 18854477.', 1, '\\20220510\\5553eb142ff24d8e9fa97b756801ad5e.png', NULL, NULL, 2, NULL, NULL, 3, NULL, NULL, NULL, 40266, 40268, 40267, 8);
INSERT INTO `os_patent` VALUES (23554, 'R-T-B系焼結磁石の製造方法', 'r-t-b基烧结磁体的制造方法', 'JP2019176122A', '【課題】高い接合強度を実現しつつ、Dy及びTbを使用しなくても、高いBrと高いHcJを有するR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】\n\nR1-T-B系焼結磁石素材を用意する工程と、絶縁部材を準備用意する工程と、R2:65質量%以上97質量%以下、及びM:3質量%以上35質量%以下を含有し、アトマイズ法によって作製されたR2-M合金粉末を準備用意する工程と、前記R1-T-B系焼結磁石素材と前記絶縁部材との間に前記R2-M合金粉末を配置し、450℃以上1000℃以下の温度で前記R1-T-B系焼結磁石素材と前記絶縁部材とを接合する接合工程と、を包含する、R-T-B系焼結磁石の製造方法。\n\n【選択図】図6', '解决的问题：提供一种在实现高结合强度的同时不使用Dy和Tb的，具有高B[R和高H J 的R-T-B基烧结磁体的制造方法。\n\n [解决方案]\n\n 制备R1-TB系烧结磁体材料的步骤，制备和制备绝缘构件的步骤，R2：65质量％以上且97质量％以下，M：含有3质量％以上且35质量％以下，雾化了 制备和制备通过该方法制备的R2-M合金粉末的步骤，将R2-M合金粉末布置在R1-TB系统烧结磁体材料和绝缘构件之间且在450℃以上且1000℃以下的范围内。 一种基于RTB的烧结磁体的制造方法，包括以下步骤：在所述温度下将所述基于R1-TB的烧结磁体材料与所述绝缘构件接合。\n\n [选择图]图6', 'JP2018175736', 1537372800, 'JP2019176122A', 1570636800, 1570636800, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, '2018064134', 'JP', 1522252800, 1, 1, NULL, NULL, 2, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP1996116633A | JP2015073045A', NULL, NULL, 1, '\\20220510\\2f91a9481a0445ec819ad2e13ad97bd5.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 40269, 40271, 40270, 1);
INSERT INTO `os_patent` VALUES (23555, 'R-T-B系焼結磁石の製造方法', '制造RTB基烧结磁体的方法', 'JP6508447B1', '本開示のR-T-B系焼結磁石の製造方法は、R1-T1-B系焼結体を準備する工程と、R2-Ga-Cu-Co系合金を準備する工程と、前記焼結体の表面の少なくとも一部に前記合金の少なくとも一部を接触させ、真空又は不活性ガス雰囲気中、700℃以上1100℃以下の温度で第一の熱処理を実施する工程と、第一の熱処理が実施されたR1-T1-B系焼結体に対して、真空又は不活性ガス雰囲気中、450℃以上600℃以下の温度で第二の熱処理を実施する工程とを含む。R1、R2は希土類元素のうち少なくとも一種であり、Nd及びPrの少なくとも一方を必ず含む。Bに対するT1のmol比([T1]/[B])が14.0超15.0以下である。', '根据本公开的用于制造RTB基烧结磁体的方法包括制备R1-T1-B基烧结体的步骤，制备R2-Ga-Cu-Co基合金的步骤以及烧结体的表面。 使合金的至少一部分与其至少一部分接触，并且在真空或惰性气体气氛中，在700℃以上且1100℃以下的温度下进行第一热处理的步骤，以及进行第一热处理的R1。  -T1-B基烧结体在真空或惰性气体气氛中在450℃以上且600℃以下的温度下进行第二热处理。  R1和R2是稀土元素中的至少一种，并且总是包含Nd和Pr中的至少一种。  T1与B的摩尔比（[T1] / [B]）大于14.0且小于或等于15.0。', 'JP2019500604', 1537459200, 'JP6508447B1', 1557244800, 1557244800, NULL, 1554998400, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 33, 3, 0, 0, 0, NULL, NULL, NULL, '2017184566 | 2017184567', 'JP | JP', 1506355200, 5, 5, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, '池田 安希子', NULL, 'WO2013008756A1 | WO2015020183A1 | WO2016133071A1 | WO2018101402A1', NULL, NULL, 1, '\\20220510\\cf6a2164837442f390c031fb8f90abf8.png', NULL, NULL, 1, NULL, NULL, 16, NULL, NULL, NULL, 40272, 40274, 40273, 5);
INSERT INTO `os_patent` VALUES (23556, '多結晶希土類遷移金属合金粉末およびその製造方法', '多晶稀土过渡金属合金粉末及其制造方法', 'JP2020045544A', '【課題】均一な物性を安定して実現することができる多結晶希土類遷移金属合金粉末およびその製造方法を提供する。\n\n【解決手段】本発明は、希土類元素と遷移金属元素とを含む金属間化合物からなる複数の多結晶粒子を含む多結晶希土類遷移金属合金粉末であって、前記多結晶粒子は、この多結晶粒子を構成する結晶粒のうち面積円相当径1μm以下の結晶粒の割合が、個数基準で60%以上であり、前記多結晶希土類遷移金属合金粉末の平均粒径が50μm以下である、合金粉末である。\n\n【選択図】図2', '解决的问题:提供一种能够稳定地实现均匀的物理性质的多晶稀土过渡金属合金粉末及其制造方法。\n\n 本发明是一种多晶稀土-过渡金属合金粉末,其包含多个由包含稀土元素和过渡金属元素的金属间化合物制成的多晶颗粒,其中所述多晶颗粒为多晶颗粒。 构成它们的晶粒中,面积圆当量直径为1μm以下的晶粒的比例为60%以上,多晶稀土过渡金属合金粉末的平均粒径为50μm以下。 在那儿。\n\n [选择图]图2', 'JP2018176838', 1537459200, 'JP2020045544A', 1585152000, 1585152000, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 18, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 2, NULL, NULL, NULL, NULL, NULL, NULL, NULL, '資源·素材学会誌106(1990)773 | 金属69(1999)881', 1, '\\20220510\\cfc4e85e8700433c91890635d2d64818.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 40275, 40277, 40276, 2);
INSERT INTO `os_patent` VALUES (23557, 'R-T-B系焼結磁石の製造方法', 'r-t-b基烧结磁体的生产方法', 'JP2019169698A', '【課題】RHの含有量を低減しつつ、高いHk/HcJを有するR-T-B系焼結磁石を製造する。\n\n【解決手段】所定の組成を有するR-T-B系焼結磁石の製造方法であって、粒径D50が3.0〜4.5μmの合金粉末を準備する工程と、前記合金粉末を、相対的に粒径の小さい微粉末と、相対的に粒径の大きい焼結用粉末とに分級する分級工程であって、前記合金粉末100質量%に対して、粒径D50が1.75〜2.5μmである微粉末を5〜30質量%除去することによって、粒径D50が3.2〜5.2μmでありかつ前記合金粉末のD50より大きい焼結用粉末を作製する分級工程と、前記焼結用粉末を成形して成形体を得る成形工程と、前記成形体を焼結して焼結体を得る焼結工程と、前記焼結体に熱処理を施す熱処理工程と、を含む、R-T-B系焼結磁石の製造方法。\n\n【選択図】なし', '为了制备具有高H / H且降低RH含量的RTB基烧结磁体。解决方案：具有预定构造的RTB基烧结磁体的生产方法包括制备具有Dof尺寸为3.0-4.5μm的合金粉末的步骤，分级步骤为 通过除去5，将合金粉末分类为具有相对较小的粒径的难熔粉末和具有相对较大的粒径的烧结粉末，并且使具有Dof的粒径为3.2-5.2μm并且大于Dof的粒径的烧结粉末成为合金粉末。 相对于合金粉末100质量％，粒径为Dof 1.75〜2.5μm的易碎粉末的质量百分比为-30质量％，通过对烧结粉末进行成型而得到成型体的成型步骤，通过对烧结粉末进行烧结而得到烧结成型体的烧结步骤。 压块，以及对烧结压块进行热处理的热处理步骤。', 'JP2018182644', 1537977600, 'JP2019169698A', 1570032000, 1570032000, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 14, 3, 0, 0, 0, NULL, NULL, NULL, '2018056855', 'JP', 1521734400, 1, 2, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'WO2013008756A1', NULL, NULL, 1, '\\20220510\\b618b5260fac4c5aaef09061bc2ec019.png', NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 40278, 40280, 40279, 2);
INSERT INTO `os_patent` VALUES (23558, 'R-T-B系焼結磁石の製造方法', 'r-t-b基烧结磁体的制造方法', 'JP2019169697A', '【課題】R-T-B系焼結磁石の磁石特性を向上させる。\n\n【解決手段】主合金粉末を用意する工程と、アトマイズ法によって作製されたPr-Ga合金粉末を用意する工程と、主合金粉末とPr-Ga合金粉末とを混合し、混合粉末の全体に対するPr-Ga合金粉末の質量比が1質量%以上10質量%以下である混合粉末を作成し、磁界中で成形する工程とを行う。更に混合粉末の成形体を950℃以上1120℃未満の焼結温度で焼結する焼結工程を行う。焼結工程における前記焼結温度をT℃、焼結時間をt秒とするとき、5×(1120-T)22の関係が成立する。\n\n【選択図】図3', '解决方案：一种制造R-T-B基烧结磁体的方法，包括以下步骤：制备主要合金粉末；制备用于制备R-T-B基烧结磁体的磁体。 制备通过雾化法制备的Pr-Ga合金粉末。 将主合金粉末与Pr-Ga合金粉末混合，以形成粉末混合物，其中Pr-Ga合金粉末的质量比相对于粉末混合物的总质量为1质量％以上且10质量％以下。 将粉末混合物在磁场中成型为压块。 该方法进一步包括烧结步骤，该烧结步骤在等于或高于950℃且低于1120℃的烧结温度下烧结粉末混合物的压块。 烧结温度为T℃，烧结时间为t秒。 在烧结步骤中，由以下表达式给出的关系成立：5×（1120-T）', 'JP2018181245', 1537977600, 'JP2019169697A', 1570032000, 1570032000, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 15, 3, 0, 0, 0, NULL, NULL, NULL, '2018054743', 'JP', 1521648000, 1, 1, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'WO2013008756A1', NULL, NULL, 1, '\\20220510\\88185063b38a42b9a2c126ee1aeec6dd.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 40281, 40283, 40282, 1);
INSERT INTO `os_patent` VALUES (23559, 'Method for producing sintered R—T—B based magnet and diffusion source', 'R—T—B系烧结磁铁的制造方法及扩散源', 'US10984930B2', 'A method for producing a sintered R-T-B based magnet includes the steps of: providing a sintered R-T-B based magnet work; providing a Pr—Ga alloy powder produced through atomization; subjecting the Pr—Ga alloy powder to a heat treatment at a temperature which is not lower than a temperature that is 250° C. below a melting point of the Pr—Ga alloy powder and which is not higher than the melting point, to obtain a diffusion source from the Pr—Ga alloy powder; and placing the sintered R-T-B based magnet work and the diffusion source in a process chamber, and heating the sintered R-T-B based magnet work and the diffusion source in a vacuum or an inert gas ambient, thereby allowing Pr and Ga to diffuse from the diffusion source into the interior of sintered R-T-B based magnet work.', '一种制造烧结R-T-B基磁体的方法包括以下步骤:提供烧结的R-T-B基磁体工作; 提供通过雾化产生的PR-GA合金粉末; 在不低于250℃的温度的温度下使PR-GA合金粉末在温度下进行热处理,低于PR-GA合金粉末的熔点,其不高于熔点,以获得 来自PR-GA合金粉末的扩散源; 并将基于烧结的RTB的磁体工作和扩散源放置在处理室中,并在真空或惰性气体环境中加热烧结的RTB的磁体工作和扩散源,从而允许PR和GA从扩散源漫射到 基于烧结的RTB磁体工作的内部。', 'US16/143572', 1537977600, 'US10984930B2', 1618848000, 1553702400, NULL, 1618848000, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, '2017187700 | 2017187704', 'JP | JP', 1506528000, 4, 8, NULL, NULL, 9, 0, 0, 0, 1, NULL, '869', NULL, 'SU, XIAOWEI', NULL, 'CN101572145A | CN107077965A | US20140132377A1 | US20180025819A1 | US20180240590A1 | US20190096575A1 | WO2013008756A1 | WO2016133071A1 | WO2017018291A1', NULL, 'Official Communication issued in corresponding Chinese Patent Application No. 201811139367.6, dated Jan. 7, 2021.', 1, '\\20220510\\a17870869d444632bd995ff00900ee56.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 40284, 40209, 40208, 8);
INSERT INTO `os_patent` VALUES (23560, 'Method for producing sintered R-T-B based magnet and diffusion source', '烧结R-T-B基磁铁的制造方法及扩散源', 'US11062843B2', 'A method for producing a sintered R-T-B based magnet includes the steps of: providing a sintered R1-T-B based magnet work (where R1 is a rare-earth element; T is Fe, or Fe and Co); providing a powder of an alloy in which a rare-earth element R2 accounts for 40 mass % or more of the entire alloy, the rare-earth element R2 always including Dy and/or Tb; subjecting the powder to a heat treatment to obtain a diffusion source; and heating the sintered R1-T-B based magnet work with the diffusion source to allow the at least one of Dy and Tb contained in the diffusion source to diffuse from the surface into the interior of the sintered R1-T-B based magnet work. The alloy powder is a powder produced by atomization.', '用于制造烧结的R-T-B基磁体的方法包括以下步骤:提供烧结的R1-T-B基磁体工作(其中R1是稀土元素; T是Fe,Or Fe和Co);提供一种合金的粉末,其中稀土元素R2占整个合金的40质量%或更多,稀土元素R2总是包括Dy和/或Tb;使粉末使粉末进行热处理以获得扩散源;并加热基于烧结的R1-T-B磁体与扩散源一起使用,以允许漫射源中包含的Dy和Tb中的至少一种,以将从表面扩散到烧结的R1-T-B基磁体工作的内部。合金粉末是通过雾化产生的粉末。', 'US16/143569', 1537977600, 'US11062843B2', 1626105600, 1553702400, NULL, 1626105600, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, '2017187701 | 2017187707', 'JP | JP', 1506528000, 4, 8, NULL, NULL, 8, 0, 0, 0, 1, NULL, '869', NULL, 'YANG, JIE', NULL, 'CN101572145A | CN107077965A | JP2011014668A | US20110000586A1 | US20120286191A1 | US20180240590A1 | US20190096550A1 | US9044810B2', NULL, 'Official Communication issued in corresponding Chinese Patent Application No. 201811140200.1, dated Feb. 5, 2021.', 1, '\\20220510\\ce12a8c8053d49b59948e6169b721613.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 40285, 40203, 40202, 8);
INSERT INTO `os_patent` VALUES (23561, '円筒状磁気回路及びその製造方法', '圆柱磁路及其制造方法', 'JP2020096413A', '【課題】加工等の無駄の発生を抑え、効率よく製造することのできる、永久磁石とヨークとからなる円筒状磁気回路及びその製造方法を提供する。\n\n【解決手段】円筒状磁気回路100は、円筒状に配置された複数の永久磁石101と、永久磁石101の外周又は内周に、永久磁石101に接続して円筒状に配置された複数のヨーク102と、複数のヨーク102を固定するためのリング状固定部103とを有する。\n\n【選択図】図1', '解决的问题:提供一种包括永磁体和磁轭的圆筒形磁路及其制造方法,该磁路可以通过抑制诸如加工的废物的发生而有效地制造。 \n\n 圆柱形磁路100包括:多个永磁体101,其布置为圆柱形;以及多个磁轭,其连接至永磁体101,并且以永磁体101的外周或内周呈圆柱形。 它具有102和用于固定多个轭102的环形固定部分103。 \n\n [选择图]图1', 'JP2018231073', 1544371200, 'JP2020096413A', 1592409600, 1592409600, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 3, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP1995322589A | JP2012034436A | JP2018019532A', NULL, NULL, 1, '\\20220510\\dfed98ec932a46fda3f392054088032d.png', NULL, NULL, 1, NULL, NULL, 17, NULL, NULL, NULL, 40286, 40288, 40287, 1);
INSERT INTO `os_patent` VALUES (23562, 'R-T-B系焼結磁石の製造方法', 'R-t-b型烧结磁体的制造方法', 'JPWO2019181249A1', '所定の組成を有し、式(1)を満足するR-T-B系焼結磁石の製造方法であって、最大厚さが2mm以下である原料Coを使用して、前記R-T-B系焼結磁石の組成を満足する合金を作製する工程と、前記合金から合金粉末を作製する工程と、前記合金粉末を成形して成形体を得る成形工程と、前記成形体を焼結して焼結体を得る焼結工程と、前記焼結体に熱処理を施す熱処理工程と、を含む、R-T-B系焼結磁石の製造方法。\n\n14[B]/10.8<[T]/55.85 (1)\n\n([B]は質量%で示すBの含有量であり、[T]は質量%で示すT(TはFeとCo)の含有量である)', '具有预定组成且满足式(1)的RTB类烧结磁体的制造方法,其中使用最大厚度为2mm以下的原料Co来获得RTB类烧结磁体的组成。制造令人满意的合金的步骤,由该合金制造合金粉末的步骤,将该合金粉末成型以获得成型体的成型步骤以及将成型体烧结以获得烧结体的烧结步骤。用于制造基于RTB的烧结磁体的方法,其包括对烧结体进行热处理的步骤和热处理步骤。 \n\n 14 [B] / 10.8 <[T] /55.85(1) \n\n ([B]是质量%表示的B的含量,[T]是质量%表示的T的含量(T是Fe和Co))', 'JP2019534905', 1549382400, 'JPWO2019181249A1', 1612368000, 1612368000, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A1', NULL, NULL, 25, 2, 0, 0, 0, NULL, NULL, NULL, '2018056846 | 2018182636', 'JP | JP', 1521734400, 3, 3, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'WO2013008756A1', NULL, NULL, 1, '\\20220510\\b436397deb2e400b9ad2b7e6b1f1c4d2.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 40289, 40291, 40290, 3);
INSERT INTO `os_patent` VALUES (23563, 'ガリウムの回収方法', '镓的回收方法', 'JP2020050943A', '【課題】 処理対象物からコバルトの混入を抑制しつつ、ガリウムを回収する方法を提供すること。\n\n【解決手段】 少なくとも鉄族元素とガリウムを含む処理対象物を、温度が120℃未満であり、1mol/L以上、13.8mol/L以下に調整したアルカリ金属の水酸化物の水溶液に浸漬処理する。水溶液の温度は70℃以上であることが望ましく、更に浸漬時間が10分以上であるとなおよい。もしくは、浸漬時間は48時間以上であることが望ましく、更に水溶液の温度が50℃以上であるとなおよい。処理対象物は、希土類元素-鉄-ホウ素系永久磁石の磁石スラッジまたは前記磁石スラッジから希土類元素を除去することで得られる酸化鉄を主成分とする残渣であり得る。\n\n【選択図】図1', '解决的问题:提供一种回收镓的方法,同时抑制来自待处理物体的钴的混合物。\n\n 解决方案:将至少包含铁族元素和镓的待处理物体浸入温度低于120°C的碱金属氢氧化物水溶液中,并调节至1 mol / L以上且13.8 mol / L以下。  .. 水溶液的温度优选为70℃以上,更优选为10分钟以上。 或者,浸渍时间优选为48小时以上,更优选水溶液的温度为50℃以上。 处理对象可以是稀土元素-铁-硼永磁体的磁体污泥或通过从磁体污泥中除去稀土元素而获得的以氧化铁为主要成分的残渣。\n\n [选型图]图1', 'JP2019024385', 1550073600, 'JP2020050943A', 1585756800, 1585756800, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, '2018177756', 'JP', 1537459200, 1, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\57891a768a394179883bd54e5663d423.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40292, 40294, 40293, 2);
INSERT INTO `os_patent` VALUES (23564, 'ガリウムの回収方法', '如何回收镓', 'JP2020132911A', '【課題】 処理対象物からコバルトの混入を抑制しつつ、ガリウムを回収する方法を提供すること。\n\n【解決手段】 少なくとも鉄、コバルトとガリウムを含む処理対象物を、温度が70℃以上、150℃未満であり、0.01mol/L以上、5.6mol/L以下の酸化剤と、1.0mol/L以上、13.8mol/L以下のアルカリ金属の水酸化物と、を含む水溶液に浸漬処理する。また、酸化剤は0.01mol/L以上、1.18mol/L未満がより望ましく、0.35mol/L以上、1.18mol/L未満が更に望ましい。処理対象物は、希土類元素-鉄-ホウ素系永久磁石の磁石スラッジまたは前記磁石スラッジから希土類元素を除去することで得られる酸化鉄を主成分とする残渣であり得る。\n\n【選択図】なし', '解决的问题:提供一种回收镓的方法,同时抑制来自待处理物体的钴的混合。 \n\n 解决方案:一种氧化剂,至少含有70°C以上且低于150°C的铁,钴和镓,0.01 mol / L以上且5.6 mol / L以下且1.0 mol / L以上。 ,13.8 mol / L以下,以及含有碱金属氢氧化物的水溶液。 另外,氧化剂更优选为0.01mol / L以上且小于1.18mol / L,进一步优选为0.35mol / L以上且小于1.18mol / L。 处理对象可以是稀土元素-铁-硼基永磁体的磁体污泥或通过从磁体污泥中除去稀土元素而获得的含有氧化铁作为主要成分的残渣。 \n\n [选择图]无', 'JP2019024388', 1550073600, 'JP2020132911A', 1598803200, 1598803200, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 0, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 2, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP1975002790B1 | JP1994192877A', NULL, NULL, 1, '\\20220510\\f538974d6c21493db84b0b1beab8e93e.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 40295, 40297, 40296, 1);
INSERT INTO `os_patent` VALUES (23565, '金属粉末製造装置、及び金属粉末の製造方法', '制造金属粉末制造设备和金属粉末的方法', 'JPWO2019160154A1', '金属粉末製造装置は、溶融金属を垂下する供給手段と、供給手段から垂下した溶融金属に、燃焼炎噴射口から超音速の燃焼炎を集中噴射し、集中した燃焼炎を噴出集束流にして直下に噴出させる燃焼炎噴射手段と、噴出集束流の上流部周りの雰囲気を安定させる安定部材と、を有する。', '金属粉末制造装置将超声波的燃烧火焰从燃烧的燃烧中注射到供应装置中,以悬挂熔融金属和从供应装置悬挂的熔融金属,并且直接低于聚焦的燃烧火焰。燃烧火焰喷射装置被弹出和稳定稳定气氛围绕喷射浓度流动的上游部分的气氛。', 'JP2019572323', 1550505600, 'JPWO2019160154A1', 1616601600, 1616601600, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A1', NULL, NULL, 16, 3, 0, 0, 0, NULL, NULL, NULL, '2018026917', 'JP', 1518969600, 3, 3, NULL, NULL, 0, 0, 0, 0, 0, NULL, '903', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\22db7b1d4ef34d78a55e28ac3ca4d845.png', NULL, NULL, 2, NULL, NULL, 10, NULL, NULL, NULL, 40298, 40300, 40299, 3);
INSERT INTO `os_patent` VALUES (23566, 'R-T-B系焼結磁石の製造方法', '制造R-T-B基烧结磁体的方法', 'JPWO2019187858A1', 'R1-T-B系焼結磁石素材を用意する工程と、鉄系金属部材を準備用意する工程と、R2:65質量%以上97質量%以下、及びM:3質量%以上35質量%以下を含有し、アトマイズ法によって作製されたR2-M合金粉末を準備用意する工程と、前記R1-T-B系焼結磁石素材と前記鉄系金属部材との間に前記R2-M合金粉末を配置し、450℃以上1000℃以下の温度で前記R1-T-B系焼結磁石素材と前記鉄系金属部材とを接合する工程と、を包含する、R-T-B系焼結磁石の製造方法。', '制备基于R1-TB的烧结磁体材料并制备铁基金属构件,以及制备铁基金属构件的步骤,R2:65质量%或更高,97质量%以下,以及M: 3质量%以上和35质量%或更少的制备由雾化方法产生的R2-M合金粉末的方法,以及基于R1-TB的烧结磁体材料和铁基金属构件在R2-M合金粉末,450℃。用于制造基于RTB的烧结磁体的方法,包括在1000℃的温度下粘合R1-TB的烧结磁体材料和铁基金属构件的步骤或更少。', 'JP2020510453', 1550764800, 'JPWO2019187858A1', 1619020800, 1619020800, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A1', NULL, NULL, 18, 1, 0, 0, 0, NULL, NULL, NULL, '2018064133 | 2018175735', 'JP | JP', 1522252800, 3, 3, NULL, NULL, 2, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP1996116633A | JP2015073045A', NULL, NULL, 1, '\\20220510\\43d5a08cf51b4bbbad77c0443df31362.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40301, 40303, 40302, 3);
INSERT INTO `os_patent` VALUES (23567, 'R-T-B系焼結磁石の製造方法', '制造R-T-B基烧结磁体的方法', 'JPWO2019187857A1', '組成が異なる複数のR1-T-B系焼結磁石素材を準備用意する工程と、R2:65質量%以上97質量%以下、及びM:3質量%以上35質量%以下を含有し、アトマイズ法によって作製されたR2-M合金粉末を準備用意する工程と、前記複数のR1-T-B系焼結磁石素材の間に前記R2-M合金粉末を配置し、450℃以上1000℃以下の温度で前記複数のR1-T-B系焼結磁石素材を接合する工程と、を包含する、R-T-B系焼結磁石の製造方法。', '制备具有不同组成的多个基于R1-TB的烧结磁体材料,R2:65质量%或更高,97质量%或更小,以及M:3质量%或更高,35质量%或更低,通过雾化方法制备制备R2-M合金粉末的步骤和R2-M合金粉末设置在多个基于R1-TB的烧结磁体材料之间,并在450℃或更高的温度下进行。 °C.或更小,用于制造基于RTB的烧结磁体的多种方法,包括键合的R1-TB的烧结磁体材料的步骤。', 'JP2020510452', 1550764800, 'JPWO2019187857A1', 1619020800, 1619020800, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A1', NULL, NULL, 17, 1, 0, 0, 0, NULL, NULL, NULL, '2018064132 | 2018175734', 'JP | JP', 1522252800, 3, 3, NULL, NULL, 2, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP1996116633A | JP2015073045A', NULL, NULL, 1, '\\20220510\\7e4c293a4677472581b3f0e9e8fbc99d.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40304, 40306, 40305, 3);
INSERT INTO `os_patent` VALUES (23568, '希土類遷移金属系磁石粉末の製造方法', '稀土过渡金属磁铁粉末的制造方法', 'JP2020100892A', '【課題】製造コスト上昇を防ぎつつ、高特性の希土類遷移金属系磁石粉末を収率よく製造する方法を提供すること。\n\n【解決手段】希土類遷移金属系磁石粉末の製造方法であって、以下の工程;希土類酸化物粉末と、遷移金属粉末と、アルカリ金属、アルカリ土類金属及びこれらの水素化物から選ばれる少なくとも1種を含む還元剤と、を混合して原料混合物とする混合物作製工程、\n\n前記原料混合物を不活性ガス雰囲気中で熱処理して、希土類遷移金属合金成分と副生物とを含有する生成物とする還元拡散工程、及び前記還元拡散工程後に、生成物を水中に投入して水洗浄を行う湿式処理工程を有し、前記湿式処理工程の際に、水中に投入した生成物を崩壊させて、希土類遷移金属合金成分と固体状副生物由来成分とを含有するスラリーとするスラリー化処理と、前記スラリーの一部又は全部を比重分離機に通過させて、固体状副生物由来成分を除去するとともに、希土類遷移金属合金成分を回収する分離処理と、を行う、方法。\n\n【選択図】図2', '解决的问题:提供一种以高收率生产具有高特性的稀土过渡金属磁体粉末的方法,同时防止生产成本的增加。 \n\n 一种稀土过渡金属磁体粉末的制备方法,其包括以下步骤;选自稀土氧化物粉末,过渡金属粉末,碱金属,碱土金属及其氢化物中的至少一种。 与含有上述物质的还原剂混合以获得原料混合物的混合过程, \n\n 在惰性气体气氛中对原料混合物进行还原和扩散步骤以得到包含稀土过渡金属合金成分和副产物的产物之后,在还原和扩散步骤之后,将该产物放入水中并添加水。 它具有用于清洗的湿处理步骤,并且在湿处理步骤中,将投入水中的产物分解成包含稀土过渡金属合金成分和固体副产物成分的浆料。 一种进行处理和分离处理的方法,其中使一部分或全部浆料通过比重分离器以除去源自固体副产物的组分并回收稀土过渡金属合金组分。 \n\n [选择图]图2', 'JP2019050288', 1552838400, 'JP2020100892A', 1593619200, 1593619200, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 17, 1, 0, 0, 0, NULL, NULL, NULL, '2018237514', 'JP', 1545148800, 1, 1, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2014122392A', NULL, NULL, 1, '\\20220510\\ff687e6a0ea241a48b684c0e382c60a9.png', NULL, NULL, 1, NULL, NULL, 13, NULL, NULL, NULL, 40307, 40309, 40308, 1);
INSERT INTO `os_patent` VALUES (23569, 'R-T-B系焼結磁石の製造方法', 'r-t-b系烧结磁铁的制造方法', 'JP6725028B2', '【課題】重希土類元素RHを含む粉末粒子の層をR-T-B系焼結磁石の表面に均一に無駄なく効率的に塗布する。\n\n【解決手段】R-T-B系焼結磁石(Rは希土類元素、TはFeまたはFeとCo)を用意する工程と、Dy及びTbの少なくとも一方である重希土類元素RHの合金または化合物の粉末から形成した拡散源粉末を用意する工程と、磁石表面の塗布領域に厚さが10μm以上100μm以下である粘着剤を塗布する塗布工程と、粘着剤を塗布した磁石表面の塗布領域に流動浸漬法または振り掛ける方法のいずれかの方法によって拡散源粉末を付着させる付着工程と、拡散源粉末が付着した磁石を熱処理して重希土類元素RHを磁石表面から内部に拡散する拡散工程とを含む。拡散源粉末の全体の90質量%以上は、粒度が38μm超の粉末である。\n\n【選択図】図1C', '为了有效且均匀地将一层包含重稀土元素RH的粉末颗粒涂覆到RTB基烧结磁体的表面上而无浪费。解决方案：一种制造RTB基烧结磁体的方法包括以下步骤：准备RTB基烧结磁体磁铁（R是稀土元素，T是Fe或Fe和Co的组合）；制备由Dy和Tb中至少一种的重稀土元素RH的合金或化合物的粉末形成的扩散源粉末；将厚度大于等于10μm且小于等于100μm的胶粘剂施加到磁体表面的涂层区域；根据流化床涂布法和喷洒法中的任一种，将扩散源粉末沉积在已经施加了标签的磁体表面的涂布区域上；在其上沉积有扩散源粉末的磁体上进行热处理，以使重稀土元素RH从磁体表面向内扩散。在该方法中，粒径超过38μm的粉末占扩散源粉末总量的90质量％或更高。图1C', 'JP2019049444', 1552838400, 'JP6725028B2', 1594742400, 1565798400, NULL, 1593360000, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 24, 2, 0, 0, 0, NULL, NULL, NULL, '2016155761', 'JP', 1470585600, 12, 12, NULL, NULL, 11, 0, 0, 0, 0, NULL, NULL, NULL, '秋山 直人', NULL, 'JP1989062369A | JP2008263179A | JP2012234971A | JP2012248827A | JP2012248828A | WO2006043348A1 | WO2007088718A1 | WO2008032426A1 | WO2015163397A1 | WO2016039353A1', NULL, NULL, 1, '\\20220510\\bf7c69579ace47e1a6c160b1b2657984.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40179, 40181, 40180, 13);
INSERT INTO `os_patent` VALUES (23570, 'サイクロン捕集装置、希土類磁石合金粉砕システム、及びR-T-B系焼結磁石の製造方法', '旋风收集器,稀土磁体合金破碎系统以及制造r-t-b烧结磁体的方法', 'JP2020151645A', '【課題】中位径以下の微粉の回収効率を高めることが可能なイクロン捕集装置を提供する。\n\n【解決手段】本開示のサイクロン捕集装置は、粉末を運ぶ気流から前記粉末を分離するサイクロン捕集装置であって、鉛直方向に延びる中心軸Cを有する円柱状内部空間S1を規定する上側部分10A、及び、円柱状内部空間S1に連続する逆円錐状内部空間S2を規定する下側部分10Bを含むハウジング10と、ハウジング10に設けられ、粉末を運ぶ気流を逆円錐状内部空間に導入して旋回させる入口管20と、上側部分10Aに設けられ、中心軸に沿って円柱状内部空間S1に突出する出口管30とを備える。出口管は、内筒と、内筒よりも下方に延びる外筒とを有する二重管構造を有している。\n\n【選択図】図2', '解决的问题:提供一种能够提高中等直径以下的细粉的回收效率的艾康收集装置。 \n\n 本公开的旋风收集装置是将粉末​​与携带粉末的空气流分离的旋风收集装置,并且是限定具有在垂直方向上延伸的中心轴线C的柱状内部空间S1的上部。 壳体10包括下部10B,下部10B限定了与圆筒形内部空间S1和锥形内部空间S1连续的反向锥形内部空间S2,并且设置在壳体10中的承载粉末的气流被引入反向锥形内部空间。 它具有用于旋转的入口管20和出口管30,该出口管30设置在上部10A中并且沿中心轴线突出到柱状内部空间S1中。 出口管具有双管结构,该双管结构具有内部圆筒和在内部圆筒下方延伸的外部圆筒。 \n\n [选择图]图2', 'JP2019051220', 1552924800, 'JP2020151645A', 1600876800, 1600876800, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2014155901A', NULL, NULL, 1, '\\20220510\\036d633e417347b68a296075d63cc569.png', NULL, NULL, 1, NULL, NULL, 11, NULL, NULL, NULL, 40310, 40312, 40311, 1);
INSERT INTO `os_patent` VALUES (23571, 'サイクロン捕集装置、希土類磁石合金粉砕システム、及びR-T-B系焼結磁石の製造方法', '旋风收集器,稀土磁体合金破碎系统以及制造r-t-b烧结磁体的方法', 'JP2020151644A', '【課題】比重が7g/cm3以上の粉末粒子の捕集に優れ、分級ロータを用いずに粒度分布の調整が可能なサイクロン捕集装置を提供する。\n\n【解決手段】本開示のサイクロン捕集装置は、粉末を運ぶ気流から前記粉末を分離するサイクロン捕集装置であって、鉛直方向に延びる中心軸Cを有する円柱状内部空間S1を規定する上側部分10A、及び、円柱状内部空間S1に連続する逆円錐状内部空間S2を規定する下側部分10Bを含むハウジング10と、ハウジング10に設けられ、粉末を運ぶ気流を逆円錐状内部空間に導入して旋回させる入口管20と、上側部分10Aに設けられ、中心軸に沿って円柱状内部空間S1に突出する出口管30とを備える。出口管30の下端eは、入口管20の下端wよりも高い位置にある。\n\n【選択図】図2', '解决的问题:提供一种旋风收集装置,该装置在收集比重为7 g / cm3或更大的粉末颗粒方面非常出色,并且能够在不使用分级转子的情况下调节粒径分布。 \n\n 本公开的旋风收集装置是将粉末​​与携带粉末的空气流分离的旋风收集装置,并且是限定具有在垂直方向上延伸的中心轴线C的柱状内部空间S1的上部。 壳体10包括下部10B,下部10B限定了与圆筒形内部空间S1和锥形内部空间S1连续的反向锥形内部空间S2,并且设置在壳体10中的承载粉末的气流被引入反向锥形内部空间。 它具有用于旋转的入口管20和出口管30,该出口管30设置在上部10A中并且沿中心轴线突出到柱状内部空间S1中。 出口管30的下端e位于比入口管20的下端w高的位置。 \n\n [选择图]图2', 'JP2019051219', 1552924800, 'JP2020151644A', 1600876800, 1600876800, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2014155901A', NULL, NULL, 1, '\\20220510\\bde4f9f87a354a728bb19505c797a034.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40313, 40315, 40314, 1);
INSERT INTO `os_patent` VALUES (23572, 'R-T-B系焼結磁石の表面処理方法および製造方法', 'RTB系烧结磁体的表面处理方法和制造方法', 'JP2019104106A', '【課題】 錆の発生を抑制する、新たなR-T-B系焼結磁石の表面処理方法および製造方法を提供すること。\n\n【解決手段】 砥粒と液体とを含むスラリーをエアーの圧力で吐出させ、搬送されるR-T-B系焼結磁石(Rは希土類元素のうち少なくとも一種でありNdを必ず含む、Tは遷移金属元素のうち少なくとも一種でありFeを必ず含む、Bはホウ素である)の表面に当てることで表面処理するR-T-B系焼結磁石の表面処理方法であって、砥粒の粒径D50は60μm以上、130μm以下であり、スラリー中の砥粒の体積百分率は5vol%以上、15vol%以下であり、エアーの圧力は0.1MPa以上、0.4MPa以下であり、R-T-B系焼結磁石の送り速度は30mm/sec以上、90mm/sec以下であり、スラリーが吐出される方向は、搬送方向と直交する面に対して傾斜する方向であるR-T-B系焼結磁石の表面処理方法。\n\n【選択図】図1', '要解决的问题：提供一种新的表面处理方法和RTB基烧结磁体的制造方法，其抑制生锈的发生。\n\n解决方案：通过在空气压力下排出含有磨粒和液体的浆料来输送RTB基烧结磁体（R是稀土元素中的至少一种并且必须含有Nd，T是过渡金属元素）它是RTB系烧结磁体的表面处理方法，通过涂覆在至少一种Fe的表面上进行表面处理，并且总是含有B，B是硼，并且粒径D  50 如果>60μm以上且130μm以下，则浆料中的磨粒的体积百分比为5体积％以上且15体积％以下，空气压力为0.1MPa以上且0.4MPa以下RTB系烧结磁铁的表面处理方法，其中，进给速度为30mm / sec以上且90mm / sec以下，浆料的排出方向是相对于与输送方向正交的面倾斜的方向。\n\n[选图]图1', 'JP2019053312', 1553011200, 'JP2019104106A', 1561564800, 1561564800, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 1, 5, 5, 5, 0, NULL, NULL, NULL, NULL, NULL, 'JP1999238611A', 'CN110385652A | CN110385652B | JP2021059001A | JP6929579B2 | WO2021065381A1', NULL, 1, '\\20220510\\31de3bddd6e14705a15c7a79336cfe17.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40316, 40318, 40317, 1);
INSERT INTO `os_patent` VALUES (23573, 'R-T-B系焼結磁石の製造方法', 'R-t-b型烧结磁体的制造方法', 'JP2020155657A', '【課題】重希土類元素を低減し、高いBr及び高いHcJを有するR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】R1-T1-B系焼結体の準備工程と、R2-Ga-Cu系合金の準備工程と、R1-T1-B系焼結体の表面の少なくとも一部に、R2-Ga-Cu系合金の一部を接触させ、真空又は不活性ガス雰囲気中、450℃以上500℃以下の温度で熱処理する工程を含み、R1-T1-B系焼結体でBに対するT1のmol比が14.0超15.0以下であり、R2-Ga-Cu系合金でR2は希土類元素の一種でLaを含み、R2の含有量はR2-Ga-Cu系合金の70以上90mol%以下であり、かつ希土類元素に対するLaの比率がR1-T1—B系焼結体の希土類元素に対するLaの比率よりも高く、Gaの含有量はR2-Ga-Cu系合金の5以上20mol%以下であり、Cuの含有量はR2-Ga-Cu系合金の5以上20mol%以下である。\n\n【選択図】図1', '解决的问题:减少重稀土元素并增加B r 和高H J 提供一种具有上述技术的R-T-B型烧结磁体的制造方法。 \n\n 解决方案:R1-T1-B基烧结体的制备步骤,R2-Ga-Cu基合金的制备步骤以及R1-T1-B基烧结体的至少一部分表面被R2-Ga覆盖。 -R1-T1-B基烧结体中的T1与B的摩尔比,包括使一部分Cu基合金接触并在真空或惰性气体气氛中在450℃以上且500℃以下的温度下进行热处理的步骤。 R 2为大于14.0且小于等于15.0,R 2是稀土元素,并且在R 2 -Ga-Cu基合金中包含La,并且R 2的含量为R 2 -Ga-Cu基合金和稀土的70以上且90mol%以下。 La与元素的比率高于R1-T1-B基烧结体的La与稀土元素的比率,Ga含量为R2-Ga-Cu基合金的5以上且20mol%以下,并且Cu的含量为 该量为R 2 -Ga-Cu基合金的5以上且20mol%以下。 \n\n [选择图]图1', 'JP2019054079', 1553184000, 'JP2020155657A', 1600876800, 1600876800, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 16, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'WO2013008756A1', NULL, NULL, 1, '\\20220510\\311ce71f39884dc3a170e184c85fdc98.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 40319, 40321, 40320, 1);
INSERT INTO `os_patent` VALUES (23574, 'R-T-B系焼結磁石の製造方法', 'R-t-b型烧结磁体的制造方法', 'JP2020155658A', '【課題】高い保磁力HcJと高いHkを有するR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】R2(R2は、Nd及びPrの少なくとも1種を含む):27質量%以上33質量%以下を含む第1合金10の準備工程と、R3:80〜95質量%(R3は、希土類元素のうち少なくとも1種)、Ga:5〜20質量%(Gaの50質量%以下をCuで置換できる)、Fe:0〜1質量%を含む第2合金20の準備工程と、第1、第2合金を回転又は搖動する容器100内で第2合金の融点以上かつ焼結工程における焼結温度未満の温度範囲に加熱することにより、第2合金の少なくとも一部を加熱して溶融させ、溶融した第2合金の少なくとも一部を第1合金の表面に接触させて第2合金の層を第1合金の表面の少なくとも一部に形成した第3合金の準備工程と、第3合金粉末を得る工程を含み、第3合金粉末の質量に対する第2合金の質量の比が、1〜5%である。\n\n【選択図】図1', '解决的问题:具有高矫顽力HJ和高Hk提供一种具有上述技术的R-T-B型烧结磁体的制造方法。\n\nR 2(R 2含有Nd和Pr中的至少一种):含有27质量%以上且33质量%以下,R 3:80〜95质量%的第一合金10的制备工序(R 3为Nd和Pr中的至少一种)。含有(稀土元素中的至少一种),Ga:5〜20质量%(Ga的50质量%以下),Fe:0〜1质量%的第二合金20的制备工序。通过在旋转或振荡容器100中将第二合金加热到等于或高于第二合金的熔点且低于烧结步骤中的烧结温度的温度范围,来加热和熔化第二合金的至少一部分。第三合金的制备步骤,其中使至少一部分熔融的第二合金与第一合金的表面接触,以在第一合金和第三合金粉末的至少一部分上形成第二合金层。第二合金的质量与第三合金粉末的质量之比为1〜5%,包括获得步骤。\n\n[选择图]图1', 'JP2019054080', 1553184000, 'JP2020155658A', 1600876800, 1600876800, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 15, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'WO2013008756A1', NULL, NULL, 1, '\\20220510\\2fdf5df5ef27485d8251492379e971a4.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 40322, 40324, 40323, 1);
INSERT INTO `os_patent` VALUES (23575, 'R-T-B系焼結磁石の製造方法', 'R-t-b型烧结磁体的制造方法', 'JP2020161614A', '【課題】RHをほとんど使用せずに(具体的には、RH含有量を0.5質量%以下にして)、高いHcJと高いHk/HcJを有するR-T-B系焼結磁石を製造するための方法を提供することを目的とする。\n\n【解決手段】R:29.3質量%以上35.0質量%以下、B:0.80質量%以上0.91質量%以下、Ga:0.2質量%以上1.0質量%以下、及びT:61.5質量%以上69.5質量%以下を含有し、下記式(1)を満足するR-T-B系焼結磁石の製造方法であって、[T]/55.85>14[B]/10.8 (1) 合金粉末を準備する工程と、前記合金粉末を成形して成形体を得る成形工程と、前記成形体を、1010℃以上1050℃以下の焼結温度で、保持時間を20時間以上40時間以下として加熱後、1000℃から20℃/分以上で300℃まで冷却して、焼結体を得る焼結工程と、前記焼結体を、400℃以上900℃以下の熱処理温度に加熱後、20℃/分以上で300℃まで冷却する熱処理工程と、を含む、R-T-B系焼結磁石の製造方法である。\n\n【選択図】なし', '解决的问题:在不使用RH的情况下使用高H(特别是将RH的含量降低至0.5质量%以下)。J和高Hk/ HJ本发明的目的是提供一种具有上述技术的R-T-B系烧结磁铁的制造方法。\n\n溶液:R:29.3质量%以上35.0质量%以下,B:0.80质量%以上0.91质量%以下,Ga:0.2质量%以上1.0质量%以下,T:61.5质量%。含有69.5质量%以上,但是,是满足下述式(1),[T] /55.85>的RTB系烧结磁铁的制造方法。14 [B] / 10.8(1)制备合金粉的步骤,将合金粉成型以获得成型体的成型步骤,并将成型体保持在1010°C或更高且1050°C的烧结温度下通过在20小时以上且40小时以下的时间加热,然后从1000℃冷却至20℃/ min以上至300℃而获得烧结体的烧结步骤。这是用于制造基于RTB的烧结磁体的方法,其包括热处理步骤,该热处理步骤加热至以上的热处理温度,然后以20℃/ min或更高的速度冷却至300℃。\n\n[选择图]无', 'JP2019058989', 1553529600, 'JP2020161614A', 1601481600, 1601481600, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'WO2013008756A1', NULL, NULL, 1, '\\20220510\\62f19461a87f4a1b8fbb5decdf85a582.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 40325, 40327, 40326, 2);
INSERT INTO `os_patent` VALUES (23576, 'ターボ用回転センサの製造方法', '涡轮旋转传感器的制造方法', 'JP2020016637A', '【課題】着磁ナットの磁力低下を抑制可能なターボ用回転センサの製造方法を提供する。\n\n【解決手段】ターボシャフト21の先端部に螺合されコンプレッサホイール17をターボシャフト21に固定すると共に、周方向に異なる磁極が着磁された着磁ナット2と、着磁ナット2が回転することによる磁束密度の変化を測定可能な磁気検出素子31を有するセンサ部3と、を備えたターボ用回転センサ1の製造方法であって、未着磁のナットをターボシャフト21に螺合させる際、または螺合させた後に、着磁用の磁石52を用いてナットに着磁を行い、着磁ナット2を形成する。\n\n【選択図】図4', '提供一种能够抑制磁化螺母上的磁力下降的涡轮旋转传感器的制造方法。解决方案：提供一种涡轮旋转传感器1的制造方法。 旋转传感器包括：磁化螺母2，其拧在涡轮轴21的末端中，将压缩机叶轮17固定到涡轮轴21，并且沿周向磁化不同的磁极。 传感器单元3具有磁性检测元件31，该磁性检测元件31能够测量由于磁化螺母2的旋转而引起的磁通密度的变化。将非磁化螺母拧入涡轮轴21时或拧入后， 螺母通过磁铁52进行磁化，从而形成磁化螺母2。选图：图4', 'JP2019085535', 1556208000, 'JP2020016637A', 1580313600, 1580313600, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 8, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 12, 3, 0, 0, 0, NULL, NULL, NULL, '2018133598', 'JP', 1531411200, 1, 3, NULL, NULL, 1, 0, 0, 0, 0, NULL, '906', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\308aa571b94640afb63936ce16fb0c79.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 40328, 40330, 40329, 3);
INSERT INTO `os_patent` VALUES (23577, 'ガリウムの回収方法', '如何恢复镓', 'JP2021001378A', '【課題】  不純物を低減し、液体金属としてガリウムを回収すること。\n\n【解決手段】  少なくとも鉄、希土類元素、ホウ素とガリウムを含む処理対象物に対して、1)1.0mol/L以上、13.8mol/L以下のアルカリ金属の水酸化物を含む第一の水溶液に浸漬して、ガリウムを第一の水溶液に溶出させる溶解工程と、2)溶解工程で得られた第二の水溶液を酸で中和することでガリウム沈殿物を生成し、ガリウム含有沈殿物を濾過することでガリウム含有化合物を得る沈殿回収工程と、3)ガリウム含有化合物をアルカリ金属の水酸化物を含む第三の水溶液に溶解する再溶解工程と、4)再溶解工程で得られた第四の水溶液に電極を設置し、通電することによって電極表面に金属を電析する還元工程と、を含むガリウムの回収方法。', '减少杂质并作为液态金属收集镓。\n\n溶液:1.0mol / L以上,13.8mol / L或更低的碱金属的氢氧化物,其具有碱金属或较少的碱金属或更少的碱金属或更少的碱金属或更少的碱金属或多或少于13.8mol / L或更低,碱金属的氢氧化物浸入含有稀土元素,硼和镓的含有碱金属氢氧化物的第一水溶液中,通过中和第二含水水溶液来制备镓沉淀物在第一种水溶液中获得的溶解步骤在第一水溶液中洗脱镓,过滤含镓的沉淀物。获得含镓化合物和含镓化合物的沉淀回收步骤含有碱金属的氢氧化物的第三水溶液; 4)4)4)通过在水溶液上安装电极,将含镓在电极的表面上恢复到电极表面上的镓。', 'JP2019116083', 1561305600, 'JP2021001378A', 1609948800, 1609948800, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 2, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP1975002790A | JP1994192877A', NULL, NULL, 1, '\\20220510\\b450a1e16754453cb8be3797deec94c3.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, NULL, 40331, 40333, 40332, 1);
INSERT INTO `os_patent` VALUES (23578, 'Turbo-Rotationssensor-Herstellungsverfahren', '涡轮旋转传感器，制造工艺', 'DE102019118662A1', 'Ein Turbo-Rotationssensor-Herstellungsverfahren zum Herstellen eines Turbo-Rotationssensors wird zur Verfügung gestellt, der an einem Turbolader montiert ist, der eine Turbine enthält, die ein drehend angetriebenes Turbinenrad enthält, und einen Verdichter, der ein Verdichterrad enthält, das mit dem Turbinenrad über eine Turbowelle gekoppelt ist, um integral mit dem Turbinenrad gedreht zu werden. Der Turbo-Rotationssensor enthält eine magnetisch polarisierte Mutter, die unterschiedliche Magnetpole enthält, die aus einer magnetischen Polarisation resultieren, die in einer Umfangsrichtung der Mutter erzeugt wird, und die an einen Spitzenteilbereich der Turbowelle geschraubt wird, um das Verdichterrad an der Turbowelle zu fixieren, und einen Sensorabschnitt, der ein magnetisches Erfassungselement enthält, das eine Änderung bezüglich einer Magnetflussdichte messen kann, die aus einer Drehung der magnetisch polarisierten Mutter resultiert. Die magnetisch polarisierte Mutter ist, wenn eine nichtmagnetisierte Mutter an die Turbowelle geschraubt wird oder danach, durch Verwenden eines Magnetpolarisations-Erzeugungsmagneten ausgebildet, um die magnetische Polarisation in der Mutter zu erzeugen.', '提供一种用于制造涡轮旋转传感器的涡轮旋转传感器的制造方法,该方法安装在涡轮增压器上,该涡轮增压器包括具有旋转驱动的涡轮的涡轮和具有与该涡轮相配合的压缩机叶轮的压缩机。 涡轮轴联接成与涡轮一体旋转。 涡轮旋转传感器包括磁极化的螺母,该磁极化的螺母包含不同的磁极,这些磁极是由于在螺母的圆周方向上产生的磁极化而产生的,并且被旋拧到涡轮轴的尖端部分以将压缩机叶轮固定到涡轮轴, 传感器部分包括磁感应元件,该磁感应元件可以测量由于磁极化螺母的旋转而引起的磁通密度的变化。 当通过使用磁极化产生磁体在螺母中产生未磁化的螺母而将未磁化的螺母拧紧到涡轮轴上或涡轮轴之后时,形成了磁极化的螺母。', 'DE102019118662', 1562688000, 'DE102019118662A1', 1579104000, 1579104000, NULL, NULL, '德国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A1', NULL, NULL, 19, 3, 0, 0, 0, NULL, NULL, NULL, '2018133598 | 2018085535', 'JP | JP', 1531411200, 1, 3, NULL, NULL, 4, 0, 0, 0, 0, NULL, '907', NULL, NULL, NULL, 'JP1973000718U | JP1973007185U | JP2018133598A | JP2019085535A', NULL, NULL, 1, '\\20220510\\f87384d7aadb40cc8ba5dbc7e3852954.png', NULL, NULL, 1, NULL, NULL, 0, NULL, NULL, NULL, 40334, 40330, 40329, 3);
INSERT INTO `os_patent` VALUES (23579, 'サイクロン捕集装置、希土類磁石合金粉砕システム、及びR-T-B系焼結磁石の製造方法', '旋风收集装置,稀土磁铁合金研磨系统和制造R-T-B基烧结磁体的方法', 'JP2021020156A', '【課題】中位径以下の微粉の回収効率を高めることが可能なサイクロン捕集装置を提供する。\n\n【解決手段】本開示のサイクロン捕集装置100は、中心軸Cを有する円柱状内部空間S1を規定する上側部分10A、及び、円柱状内部空間に連続する逆円錐状内部空間S2を規定する下側部分10Bを含むハウジング10と、粉末を運ぶ気流を円柱状内部空間及び逆円錐状内部空間に導入して旋回させる入口管20と、円柱状内部空間に突出する出口管30と、出口管の周囲に逆円錐台の側面を規定する傾斜面60Sを有する気流調整装置60とを備える。出口管30の外側における逆円錐台の先端面の幅をa、底面の幅をbとするとき、a/b≦0.2である。\n\n【選択図】図2', '解决的问题:提供一种旋风收集装置,其能够提高中等直径或更小的细粉的回收效率。 \n\n 解决方案:本公开的旋风收集装置100限定上部10A,上部10A限定具有中心轴线C的柱状内部空间S1和与柱状内部空间连续的倒圆锥形内部空间S2,壳体10包括侧部10B。在将粉体的气流导入到圆筒状的内部空间和倒置的圆锥形内部空间中并进行回旋的进气管20,向圆筒状的内部空间突出的排气管30,以及排气管。装置60具有倾斜表面60S,该倾斜表面60S限定了倒圆锥台周围的侧面。 当倒圆锥台的顶端表面在出口管30的外侧上的宽度为a并且底表面的宽度为b时,a /b≤0.2。 \n\n [选择图]图2', 'JP2019137581', 1564070400, 'JP2021020156A', 1613577600, 1613577600, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2014155901A', NULL, NULL, 1, '\\20220510\\058a82bfe590421f8cc1ce29ec60a388.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40335, 40337, 40336, 1);
INSERT INTO `os_patent` VALUES (23580, '超音波洗浄装置、それを用いた超音波洗浄方法およびR-T-B系焼結磁石の製造方法', '超声波清洗装置,使用IT的超声波清洗方法,以及制造R-T-B基烧结磁体的方法', 'JP2021020155A', '【課題】 良好な洗浄が可能な超音波洗浄装置、それを用いた超音波洗浄方法およびR-T-B系焼結磁石の製造方法を提供すること。\n\n【解決手段】 洗浄液Lが充填される洗浄槽2と、洗浄槽2内に配置され、被洗浄物を搬送するための搬送部3と、洗浄槽2内に配置され、第1の超音波振動子4aと第2の超音波振動子4bを鉛直方向に上下に対向させた一対の超音波振動子4とを備え、搬送部3の搬送方向に沿って間隔を設けて複数対配置し、第1の超音波振動子4aと第2の超音波振動子4bの間に被洗浄物を搬送して洗浄する超音波洗浄装置1であって、複数対配置されている一対の超音波振動子4のうち、鉛直方向の下に配置された複数の第2の超音波振動子4bの間を塞ぐように泡抑制部材5を設けている。\n\n【選択図】図1', '解决的问题:提供一种能够良好清洁的超声波清洁装置,使用该超声波清洁装置的超声波清洁方法以及用于制造基于R-T-B的烧结磁体的方法。 \n\n 解决方案:装有清洁液L的清洁槽2,布置在清洁槽2中用于运输待清洁物体的运输单元3以及布置在清洁槽2中的第一超声振动。设置有儿童4a和第二超声振动器4b彼此垂直相对的第一超声振动器4,第二振动器4b和第二超声振动器4b沿竖直方向相对,并且沿输送单元3的输送方向间隔地布置有多对。超声波清洁装置1是用于在1的超声波振动器4a与第二超声波振动器4b之间输送并清洁被清洁物的超声波清洁装置1,其中,气泡抑制部件5以在多个第二超声波振动器4b之间闭合的方式设置。沿上下方向布置在下方的超声换能器4b。 \n\n [选择图]图1', 'JP2019137571', 1564070400, 'JP2021020155A', 1613577600, 1613577600, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2015123435A', NULL, NULL, 1, '\\20220510\\5bae4134e37542708178e64a8024cc4b.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40338, 40340, 40339, 1);
INSERT INTO `os_patent` VALUES (23581, 'サイクロン捕集装置、希土類磁石合金粉砕システム、及びR-T-B系焼結磁石の製造方法', '旋风收集装置,稀土磁铁合金研磨系统和制造R-T-B基烧结磁体的方法', 'JP2021035657A', '【課題】中位径以下の微粉の回収効率を高めることが可能なサイクロン捕集装置を提供する。\n\n【解決手段】本開示のサイクロン捕集装置100は、中心軸Cを有する円柱状内部空間S1を規定する上側部分10A、及び、円柱状内部空間に連続する逆円錐状内部空間S2を規定する下側部分10Bを含むハウジング10と、粉末を運ぶ気流を円柱状内部空間及び逆円錐状内部空間に導入して旋回させる入口管20と、円柱状内部空間に突出する出口管30と、出口管の周囲に前記下側部分に向かって広がる円錐台状の内壁面を規定する傾斜面を有する気流調整装置と、を備える、\n\n【選択図】図2', '本发明的目的是提供一种旋风收集装置,其能够提高低于介质直径的细颗粒的回收效率。 \n\n 本公开的旋风收集装置100在限定具有中心轴线C的圆柱形内部空间S1的上部10a下方,以及具有圆柱形内部空间的反向锥形内部空间S2。壳体10包括侧部10b和承载粉末的空气流量被引入圆柱形内部空间和反向圆锥形内部空间,并且出口管30突出到圆柱形内部空间中,以及出口管。它配备有具有倾斜表面的气流调节装置将朝向下部延伸到下部的截短内壁表面, \n\n 图2.', 'JP2019157688', 1567094400, 'JP2021035657A', 1614787200, 1614787200, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2014155901A', NULL, NULL, 1, '\\20220510\\5570c27ba1c04d70a05252dfe564cd68.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40341, 40343, 40342, 1);
INSERT INTO `os_patent` VALUES (23582, '超音波洗浄装置、超音波洗浄方法、R-T-B系焼結磁石の製造方法、搬送用治具、搬送装置', '超声波清洗装置,超声波清洗方法,基于R-T-B的烧结磁体的制造方法,转移夹具,转移装置', 'JP2021049488A', '【課題】 生産性を向上させることが可能な超音波洗浄装置、超音波洗浄方法、R-T-B系焼結磁石の製造方法、搬送用治具、搬送装置を提供する。\n\n【解決手段】 離間して複数設けられているベース部材4aと、前記ベース部材に嵌め合わせ可能なトレー4bと、ベース部材4aの間に設けられ、洗浄液Lが充填される洗浄槽5と、洗浄槽5内に配置されている第1の超音波振動子6と、洗浄槽5内で第1の超音波振動子6と上下に対向するよう移動可能な第2の超音波振動子7と、洗浄槽5内に配置され、トレー4bを第1の超音波振動子6と第2の超音波振動子7の間で保持すトレー保持部材8と、トレー4bを、一方のベース部材4a上と、トレー保持部材8上と、他方のベース部材4a上に搬送するトレー搬送部9とを有する超音波洗浄装置1。\n\n【選択図】図1', '一种能够提高生产率的超声波清洗装置,超声波清洗方法,制造R-T-B基烧结磁体,转印夹具和转移装置的方法。 \n\n 溶液:清洁罐5和托盘4B可以装配到基部构件和基部构件4a,基部构件4a可以装配在多个间隔的交叉点中,以及填充有清洁液体L和清洁罐5的清洁罐5 。设置在罐5中的第一超声换能器6和第二超声换能器7,其可以移动以面向清洁罐5中的第一超声换能器6和上部和下部,托盘保持构件8设置在清洁罐中在图5中,在第一超声换能器6和第二超声换能器7之间和托盘4b之间保持托盘4b,以及一个基部构件4a,具有托盘保持构件8和托盘传送单元9的超声波清洁装置,用于在另一个基座构件4a。 \n\n 图1', 'JP2019173179', 1569254400, 'JP2021049488A', 1617206400, 1617206400, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 23, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 2, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP1991196885A | JP2015123435A', NULL, NULL, 1, '\\20220510\\effb4e90be7b4dc5b53051a2c54cf64e.png', NULL, NULL, 1, NULL, NULL, 21, NULL, NULL, NULL, 40344, 40346, 40345, 1);
INSERT INTO `os_patent` VALUES (23583, 'R-T-B系焼結磁石の製造方法', 'R-t-b型烧结磁体的制造方法', 'JP2020161787A', '【課題】Dyの含有量を抑制したまま、高いBrと高いHcJを有するR-T-B系焼結磁石の製造方法を提供することを目的とする。\n\n【解決手段】少なくともR、B、GaおよびTを含み、R:27.0質量%以上35.0質量%以下であり、B:0.80質量%以上0.93質量%以下であり、Ga:0.15質量%以上1.0質量%以下であり、T:61.5質量%以上70.0質量%以下(TはFe又はFeとCoであり、Tの90質量%以上がFeである)であり、かつ下記式(1)を満たすR-T-B系焼結磁石素材を準備する工程と、\n\n14[B]/10.8<[T]/55.85 (1)\n\n前記R-T-B系焼結磁石素材を、400℃以上600℃以下の熱処理温度で、10秒以上30分未満の保持時間で保持して熱処理する熱処理工程と、を含む、R-T-B系焼結磁石の製造方法。\n\n【選択図】なし', '解决的问题:增加B的同时抑制Dy的含量。 r 和高H J 本发明的目的是提供一种具有上述的R-T-B系烧结磁铁的制造方法。 \n\n 溶液:至少含有R,B,Ga和T,R:27.0质量%以上且35.0质量%以下,B:0.80质量%以上且0.93质量%以下,Ga:0.15 T为61.5质量%以上且70.0质量%以下(T为Fe或Fe和Co,T为90质量%以上)的RTB系烧成。为Fe),并满足下式(1)。 \n\n 14 [B] / 10.8 <[T] /55.85(1) \n\n 一种RTB系烧结磁体的制造方法,其包括热处理步骤,将RTB系烧结磁体材料在400℃以上且600℃以下的热处理温度下保持10分钟。 10秒以上且少于30分钟的热处理时间。 \n\n [选择图]无', 'JP2019174668', 1569340800, 'JP2020161787A', 1601481600, 1601481600, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, '2019053795', 'JP', 1553011200, 1, 2, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'WO2013008756A1', NULL, NULL, 1, '\\20220510\\abf48972135345dea738fe0a7d8604e2.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 40347, 40349, 40348, 2);
INSERT INTO `os_patent` VALUES (23584, 'R-T-B系焼結磁石', 'r-t-b系统烧结磁铁', 'JP2020161788A', '【課題】重希土類元素RHをできるだけ使用せず、高温(例えば100℃)下でも高い保磁力HcJを有するR-T-B系焼結磁石を提供する。\n\n【解決手段】R:28.5質量%以上33.0質量%以下(Rは希土類元素のうち少なくとも1種であり、NdおよびPrの少なくとも1種を含む)、B:0.85質量%以上0.91質量%以下、Ga:0.35質量%以上0.75質量%以下、Cu:0.05質量%以上0.50質量%以下、Mn:0.03質量%以上0.15質量%以下、T:61.5質量%以上70.0質量%以下(TはFeまたはFeとCoであり、Tの90質量%以上がFeである)、を含み、下記式(1)を満足するR-T-B系焼結磁石。14[B]/10.8<[T]/55.85(1)([B]は質量%で示すBの含有量であり、[T]は質量%で示すTの含有量である)\n\n【選択図】図1', '解决的问题:提供一种即使在高温(例如100℃)下也具有高矫顽力HcJ的R-T-B基烧结磁体,而无需尽可能多地使用重稀土元素RH。 \n\n R:28.5质量%以上且33.0质量%以下(R是稀土元素中的至少一种,并且包括Nd和Pr中的至少一种),B:0.85质量%以上且0.91质量%或Ga以下:0.3质量%以上且0.75质量%以下; Cu:0.05质量%以上且0.50质量%以下; Mn:0.03质量%以上且0.15质量%以下; T:61.5质量%以上且70.0质量%以下(T为Fe或Fe和Co,且T的90质量%以上为Fe),且满足下式的RTB系烧结磁铁( 1)。 14 [B] / 10.8 <[T] /55.85(1)([B]为B的质量百分比,[T]为T的质量百分比) \n\n [选择图]图1', 'JP2019174671', 1569340800, 'JP2020161788A', 1601481600, 1601481600, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 2, 0, 0, 0, NULL, NULL, NULL, '2019051246', 'JP', 1552924800, 1, 2, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'WO2013008756A1', NULL, NULL, 1, '\\20220510\\cb61589fe7c145879c6928407a600eca.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 40350, 40352, 40351, 2);
INSERT INTO `os_patent` VALUES (23585, 'R-T-B系焼結磁石の製造方法', 'R-t-b型烧结磁体的制造方法', 'JP2020120101A', '【課題】RHの使用量を低減し、高いBr、HcJを有するR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】製造方法は、磁石素材を準備する工程と、RL1-RH-M1系合金を準備する工程と、RL2-M2系合金を準備する工程と、第一拡散工程と、第二拡散工程と、を含み、第一拡散工程のRL1-RH-M1系合金の付着量は4以上15mass%以下、第二拡散工程のRL2-M2系合金の付着量は1以上15mass%以下、磁石素材において、Rの含有量は27以上35mass%以下、[T]/[B]のmol比が14.0超15.0以下、RL1-RH-M1系合金において、RL1の含有量は60以上97mass%以下、RHの含有量は1以上8mass%以下、M1の含有量は2以上39mass%以下であり、RL2-M2系合金において、RL2の含有量は60以上97mass%以下、M2の含有量は3以上40mass%以下である。\n\n【選択図】図2', '要解决的问题:减少使用的RH量并增加B r , H J 提供一种具有上述技术的R-T-B型烧结磁体的制造方法。 \n\n 所述制造方法包括制备磁体材料的步骤,制备RL1-RH-M1系列合金的步骤,制备RL2-M2系列合金的步骤,第一扩散步骤和第二扩散步骤。 其中,在磁铁材料中,第一扩散步骤中的RL1-RH-M1系列合金的附着量为4以上且15质量%以下,第二扩散步骤中的RL2-M2系列合金的附着量为1以上且15质量%以下。 ,R含量为27以上且35质量%以下,[T] / [B]的摩尔比为14.0以上且15.0以下,在RL1-RH-M1系列合金中,RL1含量为60以上且97质量%以下,RH 含量为1以上且8质量%以下,M1的含量为2以上且39质量%以下,在RL2-M2系列合金中,RL2的含量为60以上且97质量%以下,M2的含量为3以上且40质量%以下。 是的。 \n\n [选择图]图2', 'JP2019176503', 1569513600, 'JP2020120101A', 1596643200, 1596643200, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 28, 1, 0, 0, 0, NULL, NULL, NULL, '2019012163', 'JP', 1548604800, 1, 2, NULL, NULL, 2, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'WO2007102391A1 | WO2016133071A1', NULL, NULL, 1, '\\20220510\\bf350ea815be4bdd8066163e8066e336.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 40353, 40355, 40354, 2);
INSERT INTO `os_patent` VALUES (23586, 'R-T-B系焼結磁石の製造方法', 'R-t-b型烧结磁体的制造方法', 'JP2020120102A', '【課題】重希土類RHの使用量を低減しつつ、高いHcJを有するR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】R-T-B系焼結磁石の製造方法は、磁石素材を準備する工程と、RL-RH-M系合金を準備する工程と、拡散工程と、を含む。拡散工程におけるR-T-B系焼結磁石素材へのRL-RH-M系合金の付着量は4以上15mass%以下でかつRHの付着量は0.1以上0.6mass%以下であり、磁石素材において、Rの含有量は、磁石素材全体の27以上35mass%以下であり、T全体に対するFeの含有量が80mass%以上であり、RL-RH-M系合金において、RLの含有量は、RL-RH-M系合金全体の60以上97mass%以下であり、RHの含有量は、RL-RH-M系合金全体の1以上8mass%以下であり、Mの含有量は、RL-RH-M系合金全体の2以上39mass%以下である。\n\n【選択図】図2', '解决的问题:减少重稀土RH的使用量并增加H J 提供一种具有上述技术的R-T-B型烧结磁体的制造方法。 \n\n 用于制造基于R-T-B的烧结磁体的方法包括制备磁体材料的步骤,制备基于RL-RH-M的合金的步骤以及扩散步骤。 在扩散过程中附着于RTB基烧结磁体材料的RL-RH-M合金的量为4以上且15质量%以下,并且RH附着量为0.1以上且0.6质量%以下。 含量为磁体材料整体的27以上且35质量%以下,相对于整体T的Fe含量为80质量%以上,在RL-RH-M型合金中,RL含量为RL-RH-M型。 对于整个RL-RH-M系列合金,合金的总含量为60以上且97质量%以下,RH含量为1以上且8质量%以下,并且对于整个RL-RH-M系列合金,M含量为2。 大于39质量%以下。 \n\n [选择图]图2', 'JP2019176504', 1569513600, 'JP2020120102A', 1596643200, 1596643200, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 19, 1, 0, 0, 0, NULL, NULL, NULL, '2019012162', 'JP', 1548604800, 1, 3, NULL, NULL, 2, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'WO2007102391A1 | WO2016133071A1', NULL, NULL, 1, '\\20220510\\eecbf6f9f7f84a95be7e581d81666082.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 40356, 40358, 40357, 3);
INSERT INTO `os_patent` VALUES (23587, 'R-T-B系焼結磁石の製造方法', 'R-t-b型烧结磁体的制造方法', 'JP2020155763A', '【課題】RHの含有量を低減しつつ、高いHcJと高いHkを有するR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】本開示のR-T-B系焼結磁石の製造方法は、R:28.5質量%以上33.0質量%以下(Rは、希土類元素のうち少なくとも1種でありNdおよびPrの少なくとも1種を含む)、B:0.85質量%以上0.91質量%以下、Ga:0.2質量%以上1.0質量%以下、Cu:0.05質量%以上0.50質量%以下、T:61.5質量%以上70.0質量%以下、を含み、14[B]/10.8<[T]/55.85([B]は質量%で示すBの含有量であり、[T]は質量%で示すTの含有量である)の関係を満足するR-T-B系焼結磁石の製造方法であって、原料合金の溶湯を1520℃以上1650℃以下の温度で、回転する冷却ロールに供給して急冷し、厚さ0.4mm以下の急冷合金を作製する工程を含む。\n\n【選択図】図1', '解决的问题:增加H的同时减少RH的含量。 J 提供了一种制造具有高Hk的R-T-B基烧结磁体的方法。 \n\n 本发明的RTB系烧结磁铁的制造方法为R:28.5质量%以上33.0质量%以下(R为稀土元素中的至少一种,并且含有Nd和Pr中的至少一种)。 ,B:0.85质量%以上且0.91质量%以下,Ga:0.2质量%以上且1.0质量%以下,Cu:0.05质量%以上且0.50质量%以下,T:61.5质量%以上且70.0质量%以下,包括14 [ B] / 10.8 满足<[T] /55.85([B]为以质量%表示的B的含量,[T]为以质量%表示的T的含量)的关系的RTB系烧结磁铁的制造方法。 这包括以下步骤:在1520℃以上且1650℃以下的温度下将原料合金的熔融金属供给至旋转的冷却辊以对其进行淬火,并且制造厚度为0.4mm或更小的淬火合金。 \n\n [选择图]图1', 'JP2019176507', 1569513600, 'JP2020155763A', 1600876800, 1600876800, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 14, 2, 0, 0, 0, NULL, NULL, NULL, '2019048427', 'JP', 1552579200, 1, 2, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'WO2013008756A1', NULL, NULL, 1, '\\20220510\\b49048ee06d7470db14be1a741ff5bfd.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 40359, 40361, 40360, 2);
INSERT INTO `os_patent` VALUES (23588, 'R-T-B系焼結磁石', 'r-t-b系统烧结磁铁', 'JP2020161790A', '【課題】高いHcJと高いHk/HcJを有するR-T-B系焼結磁石を提供する。\n\n【解決手段】主相結晶粒および粒界相を含むR-T-B系焼結磁石であって、R:28mass%以上35mass%以下、B:0.80mass%以上1.20mass%以下、Cu:0.05mass%以上1.0mass%以下、Ga:0.05mass%以上0.5mass%以下、T:61.5mass%以上70.0mass%以下、を含有し、かつ、[Cu]をmass%で示すCuの含有量とし、[Ga]をmass%で示すGaの含有量とするとき、[Cu]/([Ga]+[Cu])≧0.5が成立し、かつ、磁石断面におけるCuおよびGaを含む粒界相のうち、Gaの濃度に対するCuの濃度の比率である/が30以下である粒界相が面積比率で50%以上である、R-T-B系焼結磁石。\n\n【選択図】なし', '要解决的问题:高H J 和高H k / H J 提供具有上述的R-T-B型烧结磁铁。 \n\n 包含主相晶粒和晶界相,R:28质量%以上且35质量%以下,B:0.80质量%以上且1.20质量%以下,Cu:0.05质量%以上的RTB系烧结磁铁。 [Cu]为质量%以下,Ga:0.05质量%以上且0.5质量%以下,T:61.5质量%以上且70.0质量%以下,[Cu]为以质量表示的Cu含量。 [Ga]定义为当以质量%表示的Ga的含量为[Cu] /([Ga] + [Cu])≥0.5时,Ga的含量在含有Cu的晶界相中。 Ga在磁体的横截面中。 铜相对于 是比率  /晶界相为30以下且面积率为50%以上的R-T-B型烧结磁铁。 \n\n [选择图]无', 'JP2019176508', 1569513600, 'JP2020161790A', 1601481600, 1601481600, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 2, 0, 0, 0, NULL, NULL, NULL, '2019056940', 'JP', 1553443200, 1, 1, NULL, NULL, 3, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2008147634A | JP2008263179A | WO2018030187A1', NULL, NULL, 1, '\\20220510\\355193f819df4c3b8c23ffa04a4afd26.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 40362, 40364, 40363, 1);
INSERT INTO `os_patent` VALUES (23589, 'R-T-B系焼結磁石', 'r-t-b系统烧结磁铁', 'JP2020161789A5', '【課題】Tbの使用量を低減しつつ、高いBrと高いHcJを有するR-T-B系焼結磁石を提供する。\n\n【解決手段】R-T-B系焼結磁石の製造方法は、R1-T-B系焼結磁石素材を準備する工程と、R2-Ga合金を準備する工程と、R1-T-B系焼結磁石素材表面の少なくとも一部にR2-Ga合金の少なくとも一部を接触させ、真空又は不活性ガス雰囲気中、700℃以上950℃以下の温度で第一の熱処理を実施することにより、R2及びGaを磁石素材内部に拡散させる拡散工程と、第一の熱処理が実施されたR-T-B系焼結磁石に対して、真空又は不活性ガス雰囲気中、450℃以上750℃以下の温度で、且つ、第一の熱処温度よりも低い温度で第二の熱処理を実施する工程と、を含む。残留磁束密度(Br)が1.47T以上、保磁力(HcJ)が1900kA/m以上で、且つ、Tbを含有し、Tbの含有量が0.35mass%以下である。\n\n【選択図】図2', '要解决的问题:增加B的同时减少Tb的使用量。r和高HJ提供具有上述的R-T-B型烧结磁铁。\n\n用于制造RTB基烧结磁体的方法包括制备R1-TB基烧结磁体材料的步骤,制备R2-Ga合金的步骤以及R1-TB基烧结磁体的至少一个表面。通过使R 2 -Ga合金的至少一部分与该部分接触并在700℃以上且950℃以下的温度下进行第一热处理,从而使R 2和Ga扩散到磁体内部。对于已经进行了扩散步骤和第一热处理的RTB基烧结磁体,在真空或惰性气体气氛中温度为450℃以上且750℃以下,并且温度高于第一热处理温度,包括在较低温度下进行第二热处理的步骤。剩余磁通密度(Br)为1.47T以上,矫顽力(HcJ)为1900kA / m以上,且含有Tb,Tb含量为0.35质量%以下。\n\n[选择图]图2', 'JP2019176506', 1569513600, 'JP2020161789A5', 1644249600, 1601481600, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A5', NULL, NULL, 1, 1, 0, 0, 0, NULL, NULL, NULL, '2019056142', 'JP', 1553443200, 3, 6, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 40365, 40367, 40366, 6);
INSERT INTO `os_patent` VALUES (23590, '希土類系焼結リング磁石及びその製造方法並びに当該希土類系焼結リング磁石を用いた回転子', '稀土烧结环磁体和制造方法的方法,以及使用稀土烧结环磁铁的转子', 'JP2021087293A', '【課題】希土類系焼結リング磁石を用いた回転子を有する電動機において、渦電流の発生による磁石の減磁を低減する。\n\n【解決手段】希土類系焼結リング磁石1の外周面の周方向に少なくともn本以上の溝2(nは1以上の整数)を有することを特徴とし、当該希土類系焼結リング磁石の製造方法は希土類系焼結リング磁石を軸中心に回転させるとともに円盤状の砥石を回転させながら当接し希土類系焼結リング磁石表面に溝を形成する。さらに砥石を軸方向に移動させることで複数の溝を形成することができる。\n\n【選択図】図1', '要解决的问题:由于在具有使用稀土烧结环磁体的电动机中的电动机中产生涡流的产生,减少磁体的退磁。\n\n一种制造稀土基烧结环磁体的方法,其特征在于稀有基于地基烧结环磁体1的外周表面的圆周方向上具有至少n个凹槽2(n为1个),以及制造稀土基烧结环磁体的方法。稀土基烧结环磁体围绕轴心旋转,并且在旋转磁盘时彼此彼此相互形成凹槽的凹槽形状磨石。此外,可以通过在轴向方向上移动磨石来形成多个凹槽。\n\n图1', 'JP2019214441', 1574784000, 'JP2021087293A', 1622649600, 1622649600, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 2, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP1996163803A | JP2004135426A', NULL, NULL, 1, '\\20220510\\4acb1621557448a291a8fde9f7155f96.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 40368, 40370, 40369, 1);
INSERT INTO `os_patent` VALUES (23591, 'R-T-B系焼結磁石の製造方法', 'r-t-b系烧结磁铁的制造方法', 'JP2020107888A', '【課題】重希土類RHの使用量を低減し、Brの低下を抑制しつつ高いHcJを有するR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】\n\n軽希土類元素RLを主たる希土類元素Rとして含有するR2Fe14B型化合物結晶粒を主相として有するR-T-B系焼結磁石素材を用意する工程と、重希土類元素RHを含む合金または化合物の粉末から形成した拡散源粉末を用意する工程と、前記R-T-B系焼結磁石素材の表面の少なくとも一部に、前記拡散源粉末の少なくとも一部を接触させる工程と、前記拡散源粉末が接触した状態のR-T-B系焼結磁石素材を、800℃以上前記R-T-B系焼結磁石素材の焼結温度以下の温度で30時間以上加熱する熱処理をして、前記拡散源粉末に含まれる重希土類元素RHを前記R-T-B系焼結磁石素材の表面から内部に拡散する拡散工程と、を含む、R-T-B系焼結磁石の製造方法。\n\n【選択図】なし', '[问题]减少了重物稀土RH的使用,Br高h以抑制衰落cJ提供了一种制造基于R-T-B基烧结磁体的方法。\n\n[解决方案]\n\n含有光稀土元素RL作为主要稀土元素r2Fe.14制备具有B型化合物晶粒作为主相的RTB的烧结磁体材料的步骤,以及制备由重稀土元素RH或形成的扩散源粉末形成的扩散源粉末的步骤从化合物的粉末,以及基于RTB的烧结,使扩散源粉末的至少一部分在磁体材料的表面的至少一部分中接触的步骤,以及在状态下的RTB基烧结磁体材料扩散源粉末与800℃和RTB的烧结磁体接触。具有重稀土元素RH的扩散步骤,其在低于材料烧结温度的温度下加热30小时或更长时间从基于RTB的烧结磁体材料的表面到内部,以及用于制造基于RTB的烧结磁体的方法,包括。\n\n[选择图]无', 'JP2019231381', 1577030400, 'JP2020107888A', 1594224000, 1594224000, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 12, 3, 0, 0, 0, NULL, NULL, NULL, '2018240701', 'JP', 1545667200, 1, 1, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2008147634A | JP2008171995A | WO2007102391A1 | WO2011007758A1', NULL, NULL, 1, '\\20220510\\6cced7bac29a4e06a640c2c7a72ffd3d.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 40371, 40373, 40372, 1);
INSERT INTO `os_patent` VALUES (23592, 'Method for producing sintered r-t-b based magnet', 'r-t-b基烧结磁铁的制造方法', 'US20200243234A1', 'A method for producing a sintered R-T-B based magnet includes: a step of providing a sintered R-T-B based magnet work; a step of providing an RL-RH-M based alloy; and a diffusion step. In the diffusion step, an adhering amount of the RL-RH-M based alloy to the magnet work is 4 to 15 mass %, and an adhering amount of RH is 0.1 to 0.6 mass %; in the magnet work, the R content accounts for 27 to 35 mass %, the Fe content in the entire T accounting for 80 mass % or more; and, in the RL-RH-M based alloy, the RL content accounts for 60 to 97 mass %; the RH content accounting for 1 to 8 mass %; and the M content accounts for 2 to 39 mass %.', '一种用于制造基于R-T-B的烧结磁体的方法,包括:提供基于R-T-B的烧结磁体的步骤; 提供RL-RH-M基合金的步骤; 和扩散步骤。 在扩散工序中,RL-RH-M系合金对磁铁工件的附着量为4〜15质量%,RH的附着量为0.1〜0.6质量%。 在磁铁加工中,R含量为27〜35质量%,整个T中的Fe含量为80质量%以上。  RL-RH-M系合金中,RL含量为60〜97质量%。  RH含量为1〜8质量%。  M含量为2〜39质量%。', 'US16/752910', 1580054400, 'US20200243234A1', 1596038400, 1596038400, NULL, NULL, '美国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A1', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, '2019012162 | 2019176504', 'JP | JP', 1548604800, 2, 3, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\9afe70464eda45479b4e699dc89de88a.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 40374, 40358, 40357, 3);
INSERT INTO `os_patent` VALUES (23593, 'R-TM-B系焼結磁石', 'r-tm-b系统烧结磁铁', 'JP6801801B2', '【課題】Coを添加することなく高い耐食性と低い応力とを有するR-TM-B系焼結磁石を提供する。\n\n【解決手段】 24.5〜34.5質量%のR(RはYを含む希土類元素から選ばれる少なくとも1種)と、0.89〜1.15質量%のBと、0.1質量%未満のCoと、0.3〜0.5質量%のGaと、0.15〜0.4質量%のCuと、不可避不純物と、残部Feとを含有することを特徴とするR-TM-B系焼結磁石。\n\n【選択図】図1', '要解决的问题:提供一种在不添加Co的情况下具有高耐腐蚀性和低应力的R-TM-B基烧结磁体。 \n\n 溶液:R(R为选自包括Y的稀土元素中的至少一种)为24.5〜34.5质量%,B为0.89〜1.15质量%,Co小于0.1质量%,且0.3〜0.5质量%。  R-TM-B系烧结磁铁,其特征在于,含有Ga,0.15〜0.4质量%的Cu,不可避免的杂质以及余量的Fe。 \n\n [选择图]图1', 'JP2020012756', 1580227200, 'JP6801801B2', 1608048000, 1592409600, NULL, 1606665600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 4, 0, 0, 0, NULL, NULL, NULL, '2015066185', 'JP', 1427385600, 13, 13, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '秋山 直人', NULL, 'JP2007305878A | JP2009135393A | JP2014209546A | JP2016143828A | WO2009150843A1', NULL, NULL, 1, '\\20220510\\b321a41537bf45aebe63cf2daef27b05.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 40038, 40040, 40039, 13);
INSERT INTO `os_patent` VALUES (23594, 'R-T-B系焼結磁石', 'r-t-b系统烧结磁铁', 'JP2020150262A', '【課題】重希土類RHの使用量を低減し、Brの低下を抑制しつつ高いHcJを有するR-T-B系焼結磁石を提供する。\n\n【解決手段】R-T-B系焼結磁石は、軽希土類元素RLを主たる希土類元素Rとして含有するR2Fe14B型化合物結晶粒を主相として有し、重希土類元素RHを含有するR-T-B系焼結磁石であって、R-T-B系焼結磁石の表面から深さ20μmの位置におけるR2Fe14B型化合物結晶粒は、外殻部に平均厚さ(α)が1.0μm以下のRH拡散層((RL1-xRHx)2Fe14B(0.1≦x≦0.75))を有し、R-T-B系焼結磁石の表面から深さ300μmの位置におけるR2Fe14B型化合物結晶粒は、外殻部に平均厚さ(β)が0.6μm以下のRH拡散層を有し、かつ、次式(1)を満たしている。0.05≦α-β≦0.6···式(1)\n\n【選択図】なし', '要解决的问题:为减少重稀土RH的使用量,B r 高H,同时抑制 J 具有以上的R-T-B型烧结磁铁。 \n\n 基于R-T-B的烧结磁体包含R,该R包含轻稀土元素RL作为主要稀土元素R。 2 铁 14 以B型化合物晶粒为主要相且含有重稀土元素RH的R-T-B系烧结磁铁,在距R-T-B系烧结磁铁的表面20μm的深度处为R。 2 铁 14 B型化合物晶粒在外壳上具有平均厚度(α)为1.0μm或更小的RH扩散层((RL))。 1-x 相对湿度 x ) 2 铁 14 在距R-T-B系统烧结磁体表面300μm的深度处具有B(0.1≤x≤0.75)和R。 2 铁 14 B型化合物晶粒在外壳部分具有RH扩散层,该RH扩散层的平均厚度(β)为0.6μm以下,并且满足下式(1)。 0.05≤α-β≤0.6···式(1) \n\n [选择图]无', 'JP2020036746', 1583251200, 'JP2020150262A', 1600272000, 1600272000, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 0, 3, 0, 0, 0, NULL, NULL, NULL, '2019042207', 'JP', 1551974400, 1, 1, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2008147634A | JP2008171995A | WO2007102391A1 | WO2011007758A1', NULL, NULL, 1, '\\20220510\\af7f808e9c704b17aa1168d921ada2cf.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 40375, 40377, 40376, 1);
INSERT INTO `os_patent` VALUES (23595, '供給装置および供給方法、焼結磁石の製造方法', '供应装置和制造烧结磁体的方法', 'JP2021147197A', '【課題】省スペースで効率良くワークを供給可能な供給装置及び供給方法、効率よく焼結磁石を製造可能な製造方法を提供する。\n\n【解決手段】ワークWを押し出す方向に沿って設けられている底部と、ワークを押し出す方向に沿って底部に接して配置されワークの位置ずれを抑制するガイド部2bと、を有するレーンユニット2と、レーンユニットが押し出す方向と平行になるよう複数配置されレーンユニットを押し出す方向と交差する方向に順次搬送する搬送装置3と、レーンユニット上に配置されるワークを押し出すための押出部材4と、押出部材によって押し出されたワークを検知するための検知部5と、押出部材によってワークを押し出し検知部から得られたワークの通過情報をもとに押出部材を移動させ押出部材の位置と検知部の少なくとも一方の情報からワークの供給を終えたと判断すると押出部材を退避させ搬送装置によってレーンユニットを移動させる制御部とを有する。\n\n【選択図】図5', '本发明的一个目的是提供一种能够制造供应装置的制造方法和能够在节省空间上有效和有效地提供工作的供应装置。\n\n车道单元2具有底部的底部和引导部分2b,引导部分2b沿着提取工件w的方向,以及设置在与底部接触并抑制工件的位置偏差设置的引导部分2b。输送依次传送多个层和挤出单元4的装置3在与通道单元交叉的方向上顺序地传送,以及用于挤出布置在车道单元上的工作的挤出构件4,以及用于挤出设置的工件的挤出单元4在具有多个层的通道单元上并与通道单元交叉,使得通道单元平行于通道单元的方向。用于检测由构件和挤出构件挤出的工件的检测单元5移动基于从挤出检测单元获得的工件的通道信息,以及挤出构件和检测单元的位置的挤出构件。如果确定从一个信息完成工作供应,则挤出构件是缩回,它具有控制单元,该控制单元通过传输装置移动通道单元。\n\n图5.', 'JP2020049862', 1584547200, 'JP2021147197A', 1632672000, 1632672000, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2017065254A', NULL, NULL, 1, '\\20220510\\6c8974c1783a44b0b99c01fcfb161464.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40378, 40380, 40379, 1);
INSERT INTO `os_patent` VALUES (23596, 'R-T-B系焼結磁石の製造方法', '基于R-T-B基烧结磁体的方法', 'JP2021150547A', '【課題】 RHの含有量を低減しつつ、高いBrと高いHcJを有するR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】 R-T-B系焼結磁石(RはNd、PrおよびCeからなる群から選択される少なくとも一種、Tは遷移金属元素のうち少なくとも一種でありFeを必ず含む、Bの一部をCで置換することができる)の製造方法であって、R-T-B系合金を準備する工程と、前記R-T-B系合金の微粉末を得る工程と、前記微粉末の焼結体素材を得る工程と、R1(R1は希土類元素のうち少なくとも一種)を含む拡散源を準備する工程と、前記拡散源に含まれるR1を前記焼結体素材の表面から内部に拡散する拡散工程を含み、前記焼結体素材の密度をd1、前記R-T-B系焼結磁石の密度をd2としたときに、d2が7.3g/cm3以上、7.8g/cm3以下であり、d1/d2が0.975以上、0.995以下である、R-T-B系焼結磁石の製造方法。\n\n【選択図】なし', '问题要解决:高B,减少RH的含量r和高H.cJ提供了一种制造基于R-T-B基烧结磁体的方法。\n\n基于RTB的烧结磁体(R是选自Nd,Pr和Ce的组中的至少一种,T是过渡金属元件的至少一个,并且B的一部分总是包括在C RTB的过程中基于合金,获得RTB基合金的细粉末的步骤,以及细粉的烧结体材料,以及R1(r.1制备包括至少一个稀土元素的扩散源)和延伸源中的r1含有从烧结材料的表面漫射到烧结材料的内部的扩散步骤,以及烧结材料的D密度。1,基于R-T-B的烧结磁体D的密度2几时27.3克/厘米3超过7.8克/厘米3以下是1/ D.2制造基于R-T-B基烧结磁体的方法,其中0.975或更高,0.995或更低。\n\n[选择图]无', 'JP2020050468', 1584892800, 'JP2021150547A', 1632672000, 1632672000, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'WO2016133071A1', NULL, NULL, 1, '\\20220510\\b4d50398d21c44bf90cbde2eeefe2a36.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40381, 40383, 40382, 1);
INSERT INTO `os_patent` VALUES (23597, 'Sintered R-T-B based magnet', '烧结 R-T-B 基磁体', 'US11239011B2', 'A sintered R-T-B based magnet has remanence (Br) of 1.47 T or greater and coercivity (HcJ) of 1900 kA/m or greater and contains Tb at a content of 0.35 mass % or lower.', '烧结的R-T-B基磁体具有剩磁(Br)1.47t或更大,矫顽力(hcJ)1900ka / m或更大,含有0.35质量%或更低的Tb。', 'US16/826380', 1584892800, 'US11239011B2', 1643644800, 1601481600, NULL, 1643644800, '美国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 0, 1, 0, 0, 0, NULL, NULL, NULL, '2019056142 | 2019176506', 'JP | JP', 1553443200, 3, 6, NULL, NULL, 11, 0, 0, 0, 0, NULL, '869', NULL, 'SU, XIAOWEI', NULL, 'EP3330984A1 | US20080286595A1 | US20150162117A1 | US20150235747A1 | US20170263379A1 | US20180158582A1 | US20190185971A1 | US20190371522A1 | WO2007102391A1 | WO2018034264A1 | WO2018143230A1', NULL, NULL, 1, '\\20220510\\d0b524b35217453a81f68d80092e3785.png', NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 40384, 40367, 40366, 6);
INSERT INTO `os_patent` VALUES (23598, 'Sintered r-t-b based magnet', '烧结 r-t-b 基磁铁', 'EP3716297A1', 'A sintered R-T-B based magnet has remanence (Br) of 1.47 T or greater and coercivity (HcJ) of 1900 kA/m or greater and contains Tb at a content of 0.35 mass% or lower.', 'R-T-B系烧结磁铁的剩磁(Br)为1.47T以上,矫顽力(HcJ)为1900kA / m以上,且Tb的含量为0.35质量%以下。', 'EP2020165258', 1584979200, 'EP3716297A1', 1601395200, 1601395200, NULL, NULL, '欧洲专利局', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A1', NULL, NULL, 19, 1, 0, 0, 0, NULL, NULL, NULL, '2019056142 | 2019176506', 'JP | JP', 1553443200, 3, 6, NULL, NULL, 7, 0, 0, 0, 0, NULL, '901', NULL, 'PRIMUS, JEAN-LOUIS', NULL, 'EP3330984A1 | EP3503130A1 | EP3579256A1 | US20150235747A1 | WO2007102391A1 | WO2018034264A1 | WO2018143230A1', NULL, NULL, 1, '\\20220510\\87ec69278b9944a1bcf00157f28f8d71.png', NULL, NULL, 1, NULL, NULL, 15, NULL, NULL, NULL, 40384, 40367, 40366, 6);
INSERT INTO `os_patent` VALUES (23599, 'R-T-B系焼結磁石の製造方法', '制造R-T-B基烧结磁体的方法', 'JP2021057564A', '【課題】重希土類元素の含有量を低減しつつ、高いBr及び高いHcJを有するR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】R1-T1-B系焼結体の表面の少なくとも一部に、R2-M系合金の少なくとも一部を接触させ、真空又は不活性ガス雰囲気中、450℃以上500℃以下の温度で熱処理を実施する工程を含み、前記R1-T1-B系焼結体において、Bに対するT1のmol比([T1]/[B])が14.0超15.0以下であり、前記R2-M系合金において、R2は希土類元素のうち少なくとも一種であり、Laを必ず含み、R2の含有量は、55mol%以上90mol%以下であり、かつ、希土類元素全体に対するLaの比率が、R1-T1—B系焼結体の希土類元素全体に対するLaの比率よりも高く、Mは、Cu又はCuとAlの両方を含有し、Mの含有量は、5mol%以上40mol%以下である。\n\n【選択図】図1', '要解决的问题:高B,同时减少重稀土元素的含量 r 高H. CJ. 提供了一种制造R-T-B基烧结磁体的方法。 \n\n 将R2-M合金的至少一部分的温度与R1-T1-B基烧结体的表面的至少一部分接触,以及真空或惰性气体气氛,温度为450 ℃或更高,500℃或更低。另外,在基于R1-T1-B的烧结体中,T1至B的摩尔比([T1] / [B])为14.0或更小,R2 -M合金在稀土元素中的至少一个中,R 2是稀土元素中的至少一种,R 2的含量为55摩尔%或更高,90摩尔%或更低,并且LA与含量的比例整个稀土元素是R1-T1-B系统。高于LA与烧结体的整个稀土元素的比率,M含有Cu或Cu和Al,M的含量为5mol%或更多和40摩尔%或更少。 \n\n 图1', 'JP2020053409', 1584979200, 'JP2021057564A', 1617811200, 1617811200, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 15, 3, 0, 0, 0, NULL, NULL, NULL, '2019172813', 'JP', 1569254400, 1, 1, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'WO2013008756A1', NULL, NULL, 1, '\\20220510\\ff5eaf5ccc3a45e1a6ed3658ea23c6f8.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40385, 40387, 40386, 1);
INSERT INTO `os_patent` VALUES (23600, 'R-T-B系焼結磁石の製造方法', '基于R-T-B基烧结磁体的方法', 'JP2021153146A', '【課題】重希土類RHの使用量を低減しつつ、高いHcJを有するR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】粒径D50が2.0μm〜3.5μmの微粉末の焼結体を作製してR-T-B系焼結磁石素材を準備する工程と、RL-RH-M系合金を準備する工程と、前記R-T-B系焼結磁石素材の表面の少なくとも一部に、前記RL-RH-M系合金の少なくとも一部を付着させ、真空又は不活性ガス雰囲気中、700℃以上1100℃以下の温度で加熱する拡散工程と、を含み、前記拡散工程における前記R-T-B系焼結磁石素材への前記RL-RH-M系合金の付着量は1mass%以上2.5mass%以下である、R-T-B系焼結磁石の製造方法。\n\n【選択図】図2', '[问题]高H. High H.cJ提供了一种制造基于R-T-B基烧结磁体的方法。\n\n解决方案:粒度d50制备2.0μm至3.5μm的细粉末的烧结体的步骤,以制备基于RTB的烧结磁体材料,以及制备R1-rh-M合金的方法,以及基于RTB的烧结磁体材料。在表面的至少一部分,沉积R1-rH-m合金的至少一部分,并且在700℃或更高的温度下加热的扩散步骤或在真空中的温度或更低惰性气体气氛,并且在扩散步骤中,RTB基烧结磁体的制造方法为1质量%以上,2.5质量%或更少的粘附量的粘附量。\n\n图2.', 'JP2020053406', 1584979200, 'JP2021153146A', 1632931200, 1632931200, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 2, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'WO2007102391A1 | WO2016133071A1', NULL, NULL, 1, '\\20220510\\c6f2d23fded94f128e2fbaccf7957b0a.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 40388, 40390, 40389, 2);
INSERT INTO `os_patent` VALUES (23601, 'R-T-B系焼結磁石の製造方法', '基于R-T-B基烧结磁体的方法', 'JP2021153147A', '【課題】拡散板上に溶着した付着物を容易に取り除くことができ、生産性の悪化を抑制するR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】\n\nR-T-B系焼結磁石素材を準備する工程と、R1-M系合金粉末からなる拡散源を準備する工程と、R-T-B系焼結磁石素材の表面に前記拡散源を存在させて拡散用磁石素材を準備する工程と、拡散用磁石素材を拡散用板上に設置する工程と、拡散用板上に設置された拡散用磁石素材の温度を400℃以上1000℃以下に加熱する拡散工程と、\n\n前記拡散工程後の拡散用板を処理容器内に配置し、処理容器内の温度を110℃以上160℃以下、圧力を150kPa以上650kPa以下、相対湿度を75%以上、にして2時間以上10時間以下に加熱する付着物除去工程と、を含む、R-T-B系焼結磁石の製造方法。\n\n【選択図】なし', '本发明的一个目的是提供一种制造基于R-T-B基烧结磁体的方法,该烧结磁体可以容易地去除焊接在漫射板上的粘附性并抑制生产率的劣化。\n\n[解决方案]\n\n制备制备基于RTB的烧结磁体材料的步骤和制备由R1-M合金粉末组成的扩散源的步骤和基于RTB的烧结磁体材料的表面,并用扩散源提出以制备磁体材料用于扩散。加热在漫射板上安装漫射板的步骤的扩散步骤以及安装在扩散板上的扩散磁体材料的温度,以及加热设置在扩散板上的扩散磁体材料的扩散步骤。\n\n扩散步骤之后的漫射板置于处理容器中,加工容器中的温度为110℃或更高160℃或更小,压力为150 kPa或更大,650kPa或更小,以及相对湿度是75%或更大,相对湿度为75%以上,该方法制造基于RTB的烧结磁体,包括下面的沉积去除步骤加热。\n\n[选择图]无', 'JP2020053407', 1584979200, 'JP2021153147A', 1632931200, 1632931200, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'WO2016133071A1', NULL, NULL, 1, '\\20220510\\40a27e95843c494fae34960388fd96da.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 40391, 40393, 40392, 1);
INSERT INTO `os_patent` VALUES (23602, 'R-T-B系焼結磁石の製造方法及び拡散用合金', '制造R-T-B基烧结磁体的方法和用于扩散的合金', 'JP2021153148A', '【課題】拡散用合金の酸化や水酸化にともなう実効的な重希土類元素の損失を抑制し、高いBr及び高いHcJを有するR-T-B系焼結磁石の製造方法及び拡散用合金を提供する。\n\n【解決手段】\n\nR1-T-B系焼結磁石素材を準備する工程と、R2-Y(イットリウム)—M2拡散用合金を準備する工程と、前記R1-T-B系焼結磁石素材表面の少なくとも一部に、前記R2-Y—M2拡散用合金の少なくとも一部を接触させ、真空又は不活性ガス雰囲気中、700℃以上950℃以下の温度で熱処理を実施する拡散工程と、を含み、前記R2-Y-M2拡散用合金中のR2が75質量%以上98質量%以下であり、M2が1質量%以上25質量%以下であり、O(酸素:不可避不純物を含む)が0.2質量%以上1.0質量%以下であり、Yが0.4質量%以上0.6質量%以下である\n\n【選択図】図2', '本发明的一个目的是高B,高B.r和高H.cJ提供了一种制造基于R-T-B基烧结磁体的方法和用于扩散的合金。\n\n[解决方案]\n\n制备基于R1-TB的烧结磁体材料,制备用于扩散R2-Y(钇)-M2扩散的合金,以及R1-TB的烧结磁体材料的至少一部分,R2- a其中至少一部分Y-M2扩散合金的扩散步骤与真空或惰性气体气氛的温度为700℃以上且950℃或更低,以及R2-Y的温度接触。合金中的-M2扩散R2为75质量%以上,且98质量%以下,M2为1质量%以上,或更高,25质量%以下,o(包括氧气:不可避免的杂质)为0.2质量%以上和1.0质量%,Y为0.4质量%以上,0.6质量%以下\n\n图2.', 'JP2020053408', 1584979200, 'JP2021153148A', 1632931200, 1632931200, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 14, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2019169695A | WO2007102391A1 | WO2016133071A1 | WO2018143230A1', NULL, NULL, 1, '\\20220510\\8a5207d5143c44acac1143a80a31e738.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40394, 40396, 40395, 1);
INSERT INTO `os_patent` VALUES (23603, 'R-T-B系焼結磁石の製造方法', '基于R-T-B基烧结磁体的方法', 'JP2021153109A', '【課題】 高いHcJと高いHk/HcJを有するR-T-B系焼結磁石を効率よく製造する方法の提供。\n\n【解決手段】 R-T-B系焼結磁石の製造方法であって、R-T-B系合金粉末を準備する工程と、前記合金粉末を成形して成形体を得る工程と、前記成形体を1040℃以上1100℃以下の焼結温度で、2時間以上10時間以下の焼結時間で加熱して焼結体を得る工程と、前記焼結体を1000℃以上、焼結温度以下の温度で、0.5時間以上4時間以下の時間で加熱後、20℃/分以上で300℃まで冷却する高温熱処理工程と、前記高温熱処理工程後の焼結体を440℃以上550℃以下の温度に加熱する低温熱処理工程と、を含み、Reff:26.0質量%以上27.4質量%以下、B:0.86質量%以上0.88質量%以下、Cu:0.05質量%以上0.5質量%以下、Ga:0.2質量%以上0.7質量%以下、T:60質量%以上を含有する。\n\n【選択図】なし', '[问题]高清cJ和高H.k/ HcJ提供一种有效地制造基于R-T-B基烧结磁体的方法。\n\n一种制备基于RTB的烧结磁体的方法,制备RTB基合金粉末的步骤,以及通过模制成型体来获得模制体的步骤,并且模制体为1040℃或更高,1100°C或更少。在2小时或更长时间且10小时或更短的烧结体处,得到烧结体并获得烧结体,并在1000℃或更高的温度下,低于烧结温度,0.5小时或者更多和4小时。在下列加热后,在20℃/ min或更高的温度为300℃或更高的高温热处理步骤,并且在后面的情况下加热烧结体的低热处理过程。高温热处理过程440℃以上温度和550℃或更低。包括,reff:26.0质量%以上和27.4质量%或更低,B:0.86质量%以上,0.88质量%,Cu:0.05质量%以上,0.5质量%和0.5质量%或更低,Ga:0.2%质量以上且0.7质量%或更低,T:60质量%或更多含量。\n\n[选择图]无', 'JP2020052783', 1584979200, 'JP2021153109A', 1632931200, 1632931200, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 2, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2019169560A | WO2015030231A1', NULL, NULL, 1, '\\20220510\\9e2f556ae0884e75991b9cf80b8a4d24.png', NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 40397, 40399, 40398, 1);
INSERT INTO `os_patent` VALUES (23604, 'R-T-B系焼結磁石', '基于R-T-B的烧结磁体', 'JP2021057565A', '【課題】重希土類RHの使用量を低減しつつ、高いHcJを有するR-T-B系焼結磁石を提供する。\n\n【解決手段】主相12結晶粒及び粒界相14を含むR-T-B系焼結磁石であって、R:27.0mass%以上35.0mass%以下(Rは、RL及びRH)、B:0.80mass%以上1.20mass%以下、Ga:0.20mass%以上0.80mass%以下、T:61.5mass%以上(TはFeとCoであり、Tの90mass%以上がFeである)を含有し、磁石表面から300μmの深さに位置する主相結晶粒の中央部におけるNdに対するPrのmol比は0以上0.45以下であり、磁石表面から300μmの深さに位置する二粒子粒界内におけるNdに対するPrのmol比は2.0以上5.0以下であり、磁石表面から磁石内部にむかってRH濃度が漸減する部分を含み、磁石表面から磁石内部にむかってGa濃度が漸減する部分を含む。\n\n【選択図】図1A', '[问题]高H. High H. CJ. 提供基于R-T-B基烧结磁体。 \n\n 溶液:基于RTB的烧结磁体,包括主阶段12晶粒和晶界14,R:27.0质量%以上和35.0质量%以下(R为R1和RH),B:0.80质量%或更多1.20质量%或更少,Ga:0.20质量%以上和0.80质量%或更多,T:61.5质量%以上(T是Fe和Co,90质量%或更多的T是Fe)的,距磁铁300μm在位于深度的主相晶晶粒的中心部分处的PR至Nd的摩尔比为0或更高,0.45或更小,并且在位于300的深度的二粒边界中的PR至Nd的MOL比率来自磁体表面的μm是2.0或更大,5.0或更小,包括Rh浓度逐渐从磁体表面逐渐减小的部分,Rh浓度从磁体表面逐渐减小到磁体,并且GA浓度逐渐减小。 \n\n 图1A', 'JP2020056172', 1585152000, 'JP2021057565A', 1617811200, 1617811200, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 21, 1, 0, 0, 0, NULL, NULL, NULL, '2019176509', 'JP', 1569513600, 1, 1, NULL, NULL, 2, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'WO2007102391A1 | WO2016133071A1', NULL, NULL, 1, '\\20220510\\7409c5314f754729b37d5d5166ab179c.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 40400, 40402, 40401, 1);
INSERT INTO `os_patent` VALUES (23605, 'R-T-B系焼結磁石の製造方法', '基于R-T-B基烧结磁体的方法', 'JP2021155780A', '【課題】拡散源から焼結体に重希土類元素などを拡散する工程で敷き粉が不要になるR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】軽希土類元素RLを主たる希土類元素Rとして含有するR2Fe14B型化合物結晶粒を主相として有するR-T-B系焼結磁石素材(TはFe又はFeとCo)を用意する工程と、重希土類元素RHを含む合金の粉末から形成した拡散源粉末を用意する工程と、焼結磁石素材の少なくとも上面および下面に前記拡散源粉末を接触させる工程と、拡散源粉末が接触した状態の焼結磁石素材を支持板上に載置する工程と、支持板上に載置された焼結磁石素材に対して、450℃以上焼結温度以下の温度で1時間以上加熱する熱処理をして、拡散源粉末に含まれる重希土類元素RHを焼結磁石素材の表面から内部に拡散する拡散工程とを含み、支持板の少なくとも上面は、Fe-Cr-Al合金から形成されている。\n\n【選択図】図4', '本发明的一个目的是提供一种制造基于R-T-B基烧结磁体的方法,该烧结磁体在从扩散源扩散重稀土元素等的步骤中不需要铺设粉末。\n\n解决方案RLE CRECOR INR:RL Corporation RL2Fe.14准备制备基于RTB的烧结磁体水分(T是Fe或Fe和Co)作为主相的步骤,并制备由含有重稀土元素RH的合金粉末形成的扩散源粉末。并且至少烧结磁体材料的上表面和下表面,以及将烧结磁体材料放置在扩散源粉末与支撑板接触的状态下放置在支撑板和支撑板上。重-Rare在扩散源粉末中包含的地球元素RH从烧结磁体材料的表面内化到450℃或更高的温度下的烧结磁体材料热处理,在450℃或更高的温度下,烧结源粉末。包括扩散到的扩散步骤,至少支撑板的上表面由Fe-Cr-Al合金形成。\n\n图4.', 'JP2020055646', 1585152000, 'JP2021155780A', 1633536000, 1633536000, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2008147634A', NULL, NULL, 1, '\\20220510\\5edb32b5209a48b5a922398d2b6a41c6.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40403, 40405, 40404, 1);
INSERT INTO `os_patent` VALUES (23606, 'R-T-B系焼結磁石の製造方法', '基于R-T-B基烧结磁体的方法', 'JP2021155783A', '【課題】RHの含有量を低減しつつ、高いHcJと高いHk/HcJを維持しながら、生産性を改善できるR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】主合金粉末を準備する工程と、O:15質量%以上40質量%以下、M:60質量%以上85質量%以下(Mは、Zn、Mg、Ca、Sn、Cd、Sb、AS、Hgからなる群から選択された少なくとも1種)、を含む、酸化物粉末を準備する工程と、混合粉末を準備する工程と、焼結体を作製する工程と、を含み、混合粉末全体に対する酸化物粉末の混合量が0.03質量%以上0.55質量%以下であり、主合金粉末の酸素量に対して混合粉末のOの含有量を300ppm以上2000ppm以下増加させる量である、酸素含有量が500ppm以上3500ppm以下のR-T-B系焼結磁石の製造方法。\n\n【選択図】なし', '本发明的目的是提供一种制造能够提高生产率的R-T-B基烧结磁体的方法,同时保持高HCJ和高HK / HCJ,同时降低RH的含量。\n\n解决方案Solutismoressurempe发明:制备主要藻类粉; O:15质量%以上,40质量%,M:60质量%以上,85质量%或更低(M是Zn,Mg,Ca, Sn,Cd,Sb,制备包括选自Hg)的至少一种的氧化物粉末的方法,制备混合粉末,以及制备烧结体的步骤,以及混合粉末的混合物。氧含量的量是0.03质量%以上和0.55质量%或更小,并且氧含量的量相对于主要藻粉的氧气量增加300ppm以上,而2000 ppm或更低。500 ppm或更多3500 PPM制造基于RTB的烧结磁体的方法。\n\n[选择图]无', 'JP2020055720', 1585152000, 'JP2021155783A', 1633536000, 1633536000, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'WO2013008756A1', NULL, NULL, 1, '\\20220510\\56e9a34327d042faabb430ce09643236.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 40406, 40408, 40407, 1);
INSERT INTO `os_patent` VALUES (23607, 'R-T-B系焼結磁石の製造方法', '基于R-T-B基烧结磁体的方法', 'JP2021155795A', '【課題】微粉末の粉砕粒度を低下させてもジェットミル粉砕時の粉砕効率の悪化を抑止しつつ、重希土類元素の含有量を低減して高いBrと高いHcJを得るR-T-B系磁石の製造方法を提供する。\n\n【解決手段】R-T-B系焼結磁石の製造方法であって、R1:33〜69質量%、B:0.2〜0.8質量%、Cu:0.8〜3.0質量%、Ga:1.8〜10質量%、T:15〜60質量%、を含む添加合金粉末を準備する工程と、R:28.5〜33.0質量%、B:0.80〜1.0質量%、Ga:0.1〜0.4質量%、T:64〜70質量%、を含む主合金粉末を準備する工程と、混合合金粉末を準備する工程と、粉砕室が不活性ガスで満たされたジェットミル装置に混合合金粉末を供給して粉砕を行って微粉末を得る工程と、微粉末の焼結体を作製する工程とを含み、添加合金粉末のPr含有量は主合金粉末のPr含有量よりも多い。\n\n【選択図】図1', '要解决的问题:减少重物稀土元素的含量,同时抑制喷射铣削时的研磨效率的劣化,即使细粉末的研磨晶粒尺寸降低为高B.r和高H.cJ提供了一种制造基于R-T-B基磁体的方法。\n\n一种制造基于RTB的烧结磁体的方法,R1:33至69重量%,B:0.2至0.8重量%,Cu:0.8至3.0重量%,Ga:1.8至10重量%,T:制备加入15至60重量%,R:28.5至33.0重量%,B:0.80%至1.0重量%,Ga:0.1至0.4重量%,T:64至70重量%,加重,该过程的加入合金粉末制备主要合金粉末,包括制备混合合金粉末的方法,并且破碎室向填充有惰性气体的喷射磨机装置供应混合合金粉末,通过破碎获得细粉。,生产烧结体的过程在细粉末结束时,添加剂合金粉末的PR含量大于主藻粉的PR含量。\n\n图1', 'JP2020056173', 1585152000, 'JP2021155795A', 1633536000, 1633536000, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 18, 5, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 3, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP1994140220A | JP1996148317A | WO2013008756A1', NULL, NULL, 1, '\\20220510\\9fa95d834d7d46a5904b42126f42fa9f.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 40409, 40411, 40410, 2);
INSERT INTO `os_patent` VALUES (23608, 'R-T-B系焼結磁石の製造方法', '基于R-T-B基烧结磁体的方法', 'JP2021155782A', '【課題】低温で高いBrを有するとともに、室温で高いHk/HcJを有するR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】\n\nR-T-B系焼結磁石の製造方法であって、R-T-B系合金粉末を準備する工程と、前記R-T-B系合金粉末を成形し、成形体を準備する工程と、前記成形体を焼結し、焼結体を準備する工程と、を含み、前記R-T-B系焼結磁石は、Prを含有し、Prの含有量はR全体の75質量%以上であり、前記焼結体を準備する工程は、前記成形体を温度1000℃以上1100℃以下で加熱し、加熱時間は10時間以上56時間以上であり、且つ、前記加熱時間は、加熱時間をt、前記R-T-B系焼結磁石のPrの含有量(質量%)を[Pr]、Rの含有量(質量%)を[R]としたとき、t≧0.859×e(3.26×[Pr]/[R])を満足する。\n\n【選択図】なし', '低温下的高温r室温下高hk/ HcJ提供了一种制造基于R-T-B基烧结磁体的方法。\n\n[解决方案]\n\n制备基于RTB的烧结磁体的方法并制备RTB基合金粉末和制备模塑体的步骤,并烧结模塑体。制备和制备的过程,RTB基烧结磁体包含Pr, PR的含量为75质量%以上或更多的R,并且上面描述了制备烧结体的步骤。在1000℃或更高,1100℃或更低的温度下加热。加热时间为10小时以上且56小时以上,加热时间为T,当[PR]和R含量(质量%)是[ R],T00 0.859×e(3.26×[Pr]/[R])我满足了它。\n\n[选择图]无', 'JP2020055718', 1585152000, 'JP2021155782A', 1633536000, 1633536000, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'WO2014157448A1', NULL, NULL, 1, '\\20220510\\b9ea4b5824e74f23ad0c0ad57cde3389.png', NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 40412, 40414, 40413, 1);
INSERT INTO `os_patent` VALUES (23609, 'R-T-B系焼結磁石の製造方法', '基于R-T-B基烧结磁体的方法', 'JP2021155781A', '【課題】拡散源から焼結体に重希土類元素などを拡散する工程で敷き粉が不要になるR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】軽希土類元素RLを主たる希土類元素Rとして含有するR2Fe14B型化合物結晶粒を主相として有するR-T-B系焼結磁石素材を用意する工程と、重希土類元素RHを含む合金の粉末から形成した拡散源粉末を用意する工程と、焼結磁石素材の少なくとも上面および下面に拡散源粉末を接触させる工程と、拡散源粉末が接触した状態の焼結磁石素材を支持板上に載置する工程と、支持板上に載置された焼結磁石素材に対して、450℃以上焼結温度以下の温度で1時間以上加熱する熱処理をして、拡散源粉末に含まれる重希土類元素RHを焼結磁石素材の表面から内部に拡散する拡散工程とを含み、支持板の少なくとも上面は、アルミナの層から形成されており、上面の表面粗さは、20μm以上100μm以下である。\n\n【選択図】図4', '本发明的一个目的是提供一种制造基于R-T-B基烧结磁体的方法,该烧结磁体在从扩散源扩散重稀土元素等的步骤中不需要铺设粉末。\n\n解决方案RLE CRECOR INR:RL Corporation RL2Fe.14制备具有B型化合物晶粒作为主相的RTB的烧结磁体材料的步骤;以及制备由含有重稀土元素RH的合金粉末形成的扩散源粉末的步骤,以及烧结磁体材料的上表面和将扩散源粉末接触下表面的步骤以及将烧结磁体材料放置在扩散源粉末与支撑板和烧结磁体接触的状态下的步骤安装在支撑板上的材料。热处理在450℃以上的温度下加热等于或小于1小时的温度,包括从烧结表面扩散的扩散步骤磁体材料到扩散源粉末的内部,并且支撑板的至少上表面由一层氧化铝形成,上表面的表面粗糙度为20μm或更大,100μm或更小。\n\n图4.', 'JP2020055647', 1585152000, 'JP2021155781A', 1633536000, 1633536000, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2008147634A', NULL, NULL, 1, '\\20220510\\216c5647f33f4ea2afcb1b927c005d59.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 40415, 40417, 40416, 1);
INSERT INTO `os_patent` VALUES (23610, 'R-T-B系焼結磁石の製造方法', '基于R-T-B基烧结磁体的方法', 'JP2021155811A', '【課題】焼結体寸法のばらつきを抑制して焼結体の加工の取り代を低減することが可能なR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】本開示のR-T-B系焼結磁石の製造方法は、R-T-B系焼結磁石用合金の粉末を準備する粉砕工程と、前記粉末を用いて粉末成形体を作製する成形工程と、前記粉末成形体を切断し、複数の成形体片に分割する切断工程と、前記複数の成形体片のそれぞれを焼結して複数の焼結体を作製する焼結工程とを含み、前記切断工程では、前記粉末成形体の切断間隔を、前記粉末成形体の作製に用いた前記粉末の粉体物性データおよび前記粉末成形体の粉末成形体物性データを基にして設定する。\n\n【選択図】図1', '要解决的问题:提供一种制造能够减少烧结体尺寸加工的R-T-B基烧结磁体的方法,以减少烧结体尺寸的加工。\n\n根据本公开的制造基于RTB的烧结磁体的方法是用于制备用于RTB的烧结磁体的合金的粉末的粉碎步骤,以及使用粉末制造粉末成型体的模制方法,以及粉末。在切割过程中,切割过程包括切割过程并将模制体分成多个成形块和用于烧结多个模制品中的每个成形的烧结过程以产生多个烧结体,在切割过程中产生多个烧结体A.粉末形成体的切割间隔基于用于制造粉末成型体的粉末形成体和粉末成型体的粉末成型体的粉末的物理数据设定。\n\n图1', 'JP2020057458', 1585238400, 'JP2021155811A', 1633536000, 1633536000, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2003303728A', NULL, NULL, 1, '\\20220510\\7ce5cf2434b049528e77725f925ced0c.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 40418, 40420, 40419, 2);
INSERT INTO `os_patent` VALUES (23611, 'R-T-B系焼結磁石の製造方法', '基于R-T-B基烧结磁体的方法', 'JP2021155810A', '【課題】焼結体に対する拡散材料の利用効率を高めることが可能なR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】本開示のR-T-B系焼結磁石の製造方法は、R-T-B系焼結磁石用合金の粉末成形体のワークを準備する工程と、ワークを切断し、ワークを複数の成形体片に分割する工程と、複数の成形体片のそれぞれを焼結して複数の焼結体素材を作製する焼結工程と、Rを含有する拡散源の粉末を各焼結体素材における厚さ方向の上面および下面の少なくとも一方に接触させて熱処理を行い、拡散源の粉末に含まれるRの少なくとも一部を各焼結体素材の上面および下面から内部に拡散する工程と、各焼結体素材を上面から下面まで切断して複数の焼結体片に分割する工程とを含む。\n\n【選択図】図1', '本发明的一个目的是提供一种制造基于R-T-B基烧结磁体的方法,该烧结磁体能够提高扩散材料相对于烧结体的利用效率。\n\n根据本公开的制造基于RTB的烧结磁体的方法是制备用于RTB的烧结磁体的合金的工件工作的步骤,并且将工作切割,并且将工作分成多个模制品。烧结烧结多个模制体片的步骤并在每个烧结体材料中沿厚度方向产生多个烧结体片,以及含有载体的散射源的粉末。热处理与至少一个接触下表面以进行热处理,并且漫射源粉末中的至少一部分r从每个烧结体的上表面和下表面扩散,以及每个烧结体材料的上表面。它包括从下表面切割并将其分成多个烧结体片的步骤。\n\n图1', 'JP2020057457', 1585238400, 'JP2021155810A', 1633536000, 1633536000, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 17, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2003303728A', NULL, NULL, 1, '\\20220510\\8731fcab256e499fa5d696bce8971f50.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40421, 40423, 40422, 2);
INSERT INTO `os_patent` VALUES (23612, 'R-T-B系焼結磁石の製造方法', '基于R-T-B基烧结磁体的方法', 'JP2021155809A', '【課題】歩留まりを更に高めることが可能になる新しいR-T-B系焼結磁石の製造方法を提供する。\n\n【解決手段】本開示のR-T-B系焼結磁石の製造方法は、R-T-B系焼結磁石用希土類合金の粉末成形体のワークを準備する工程と、ワークを切断し、ワークを複数の成形体片に分割する工程と、成形体片を焼結する工程とを含む。ワークを複数の成形体片に分割する工程は、平均粒径が1μm以上24μm以下の複数の砥粒と、複数の砥粒が固着した素線とを有するワイソーによってワークを切断し、ワークから削り取られた希土類合金の粉末粒子を回収する工程を含む。\n\n【選択図】図1A', '本发明的一个目的是提供一种制造新的R-T-B基烧结磁体的方法,其使得可以进一步增加产率。\n\n根据本公开的制造RTB的烧结磁体的方法是制备用于RTB的烧结磁体的稀土合金的工件工件的步骤,以及工件的工件的工件分割和烧结成形主体。将工作分成多个成形件的步骤被易用的工作切断,该工作是具有平均粒度为1μm或更大且24μm或更小的多个研磨颗粒,以及具有多个研磨颗粒的导线是固定的,从工作中剃须含有回收稀土合金粉末颗粒的步骤。\n\n图1A', 'JP2020057456', 1585238400, 'JP2021155809A', 1633536000, 1633536000, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 15, 4, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2003303728A', NULL, NULL, 1, '\\20220510\\f9b4647e21d34e3ea506631f20ff9f44.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, NULL, 40424, 40426, 40425, 2);
INSERT INTO `os_patent` VALUES (23613, 'Alloy powders and methods for producing the same', '合金粉末及其制造方法', 'WO2021194415A1', 'The present invention relates to an alloy with formula of RE-M-B-Fe as defined herein and oxygen content less than 0.9 wt%, wherein said RE is in the range of 29.0 weight % to 33.0 weight %; M is in the range of 0.25 weight % to 1.0 weight %; B is in the range of 0.8 weight % to 1.1 weight %; and Fe makes up the balance. The present invention also relates to a method for preparing a RE-M-Fe-B magnetic powder, as defined herein comprising the steps of: (a) melt spinning a RE-M-Fe-B alloy composition to obtain a melt-spun powder; (b) pressing the melt-spun powder of step (a) to obtain a compact body; (c) hot deforming the compact body of step (b) to obtain a die-upset magnet; (d) crushing the die-upset magnet of step (c) to obtain a powder; (e) milling and sieving the powder of step (d); and (f) passivating the powder of step (e) to obtain a magnetic powder; wherein: each of steps (d) to (f) is performed under a low oxygen environment and transfer between each of steps (d) to (f) is a sealed transfer; and wherein the oxygen content of the low oxygen environment and during each sealed transfer is below 0.5 weight %.', '本发明涉及到RE-MB-FE式的合金如在说明书和按重量计小于0.9%的氧含量所定义,在按重量计29.0%至33.0重量%的范围内,所述; M是在按重量计以按重量计1.0%0.25%的范围内; B是在按重量计以按重量计1.1%0.8%的范围内;和Fe是休息。本发明还涉及一种方法,用于制备M-FE-B的磁粉,如包括以下步骤的描述中定义的:通过熔接(a)中过滤的再M-FE-联邦合金组合物B以获得粉末在熔融状态下纺丝; (b)中挤压纺成步骤(a)的熔融的粉末,得到成形体的工序(C)热变形的步骤(b)将所述成形体以获得矩阵再加压磁铁; (d)从破碎步骤(c)的基质再加压磁体以获得粉末; (e)中研磨和smify从步骤(d)的粉末;及(F)通过将来自步骤(E)的粉末,以获得磁性粉末;其中:每一个步骤(d)至(f)在低氧环境中进行,并且每一个步骤(d)至(F)之间的传送是一种防水转移;和贫氧的环境中的氧含量,并且每个防水传输期间按重量计小于0.5%。', 'PCT/SG2020/050225', 1586707200, 'WO2021194415A1', 1632931200, 1632931200, NULL, NULL, '世界知识产权组织', NULL, NULL, NULL, NULL, 6, 2, NULL, NULL, NULL, NULL, 'A1', NULL, NULL, 44, 4, 0, 0, 0, NULL, NULL, NULL, '202010217586.2', 'CN', 1585065600, 4, 4, NULL, NULL, 7, 0, 0, 0, 1, 'DE,2022-01-28 | KR,', NULL, NULL, NULL, NULL, 'CN101894646A | JP2006283095A | JP2012060139A | US20170221618A1 | US4842656A | US5009706A | US5411603A', NULL, 'BROWN, D. N. ET AL.: \"Optimization of melt spun RE-Fe-B powder composition for fully dense, high energy magnets\", JOURNAL OF APPLIEDPHYSICS, vol. 109, 11 April 2011 (2011-04-11), pages 07A742, XP012148138, [retrieved on 20200930], DOI: 10.1063/1.3564969>', 1, '\\20220510\\6427d350870c4379987f64533b08360f.png', NULL, NULL, 2, NULL, NULL, 27, NULL, NULL, NULL, 40427, 40429, 40428, 4);
INSERT INTO `os_patent` VALUES (23614, '합금 분말 및 이의 제조방법', '合金粉末及其制造方法的方法', 'KR1020220036917A', '본 발명은 본원에서 정의된 바와 같은 RE-M-B-Fe의 화학식을 갖고 산소 함량이 0.9 중량% 미만인 합금 분말에 관한 것이며, 상기 화학식에서 RE는 29.0 중량% 내지 33.0 중량%의 범위 내이고; M은 0.25 중량% 내지 1.0 중량%의 범위 내이고; B는 0.8 중량% 내지 1.1 중량%의 범위 내이고; Fe는 잔여량을 구성한다. 본 발명은 또한 본원에서 정의된 바와 같은 Re-M-Fe-B 자성 분말의 제조방법으로서, (a) RE-M-Fe-B 합금 조성물을 용융 방사하여 용융 방사된 분말을 수득하는 단계; (b) 단계(a)의 용융 방사된 분말을 압착하여 압축체를 수득하는 단계; (c) 단계(b)의 압축체를 열간 변형시켜 다이-업셋 자석을 수득하는 단계; (d) 단계(c)의 다이-업셋 자석을 분쇄하여 분말을 수득하는 단계; (e) 단계(d)의 분말을 밀링 및 시이빙하는 단계; 및 (f) 단계(e)의 분말을 패시베이션하여 자성 분말을 수득하는 단계를 포함하고; 각각의 단계(d) 내지 (f)는 저산소 환경 하에서 수행되고 각각의 단계 (d) 내지 (f) 사이의 전달은 밀봉된 전달이고; 저산소 환경의, 및 각각의 밀봉된 전달 동안의 산소 함량은 0.5 중량% 미만인, 방법에 관한 것이다.', '本发明涉及一种具有如本文所定义的RE-MB-Fe的公式的合金粉末,并且具有氧含量小于0.9重量%的合金粉末,并且在上述式(C)中的RE在范围内重量为29.0%至33.0%; m的重量为0.25%至1.0%; B的重量为0.8%至1.1%; Fe构成剩余金额。本发明还进行了一种用于制备如本文所定义的RE-M-Fe-B磁性粉末的方法,包括:(a)熔融RE-M-Fe-B合金组合物以获得熔融辐射粉末; (b)压缩步骤(a)的熔体辐射粉末,得到压缩机; (c)热改性步骤(b)的压缩体以获得压铸磁铁; (d)粉碎步骤(c)的模镦磁体以获得粉末; (e)铣削并模拟步骤(d)的粉末; (f)将步骤(e)的粉末钝化以获得磁粉;每个步骤(d)至(f)在缺氧环境下进行,并且每个步骤(d)至(f)之间的转移被密封;缺氧环境期间的氧含量和密封递送的量是约0.5重量%的方法。', 'KR1020217042900', 1586707200, 'KR1020220036917A', 1647964800, 1647964800, NULL, NULL, '韩国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 29, 4, 0, 0, 0, NULL, NULL, NULL, '202010217586.2', 'CN', 1585065600, 4, 4, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\8de66c4237304fc1bb88a4ac5a4ac73a.png', NULL, NULL, 2, NULL, NULL, 27, NULL, NULL, NULL, 40427, 40429, 40428, 4);
INSERT INTO `os_patent` VALUES (23615, 'バッチ生産計画装置、バッチ生産計画方法および金属製品の熱処理方法', '批量生产规划装置,批量生产规划方法和金属产品热处理方法', 'JP2022012613A', '【課題】粉末冶金等の焼結工程において、熱処理温度が異なる複数の成形体を対象とする場合であっても、燃料費等のコスト削減を行えるバッチ生産計画装置を提供する。 【解決手段】本発明の複数の熱処理対象をバッチごとに熱処理する熱処理装置のバッチ生産計画装置は、熱処理対象ごとの熱処理する温度帯域情報、熱処理対象のサイズと数量、および熱処理炉の処理容量に基づいて、バッチ処理する熱処理対象の組の編成を求めるバッチ編成立案部21と、バッチ編成立案部により求めたバッチの編成の処理順序を求める投入順序立案部22と、バッチ編成立案部により求めたバッチの編成を、投入順序立案部で求め処理順序に従って熱処理する際の熱処理炉の温度プロファイルを、熱処理炉の熱処理コストに基づいて求める熱処理温度算出部23と、を備え、熱処理コストが最小となる温度プロファイルにより熱処理するバッチの編成とバッチの熱処理順序を求めるようにした。 【選択図】 図1', '要解决的问题:提供一种能够降低能够降低燃料成本的批量生产规划装置,即使当靶向不同的热处理温度的多个模制品也是如此。用于热处理本发明的多个热处理靶的热处理装置的分批生产计划装置是为每个热处理目标进行热处理的,热处理的温度带信息,热处理目标的尺寸和数量以及热处理炉的处理能力。基于批量版建立单元21,用于形成要批处理的热处理目标的组成,输入订单计划单元22用于由此获得的批处理的处理顺序。批量建立平面,批量版建立指导热处理炉的温度曲线基于热处理炉的热处理成本获得热处理,通过热处理温度计算单元23最小化热处理成本基于热处理炉的热处理成本获得,基于热处理炉的热处理成本获得热处理炉的温度曲线。通过温度曲线和热处理进行热处理的批次的形成获得批次顺序。图1', 'JP2020114567', 1593619200, 'JP2022012613A', 1642348800, 1642348800, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 18, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2011221887A', NULL, NULL, 1, '\\20220510\\17a8b9677f4e4aecadf87d5590ff7ce0.png', NULL, NULL, 1, NULL, NULL, 11, NULL, NULL, NULL, 40430, 40432, 40431, 1);
INSERT INTO `os_patent` VALUES (23616, 'R-T-B系焼結磁石用合金粉末の製造方法およびジェットミル粉砕システム', '用于R-T-B基烧结磁体和喷射磨削系统的合金粉末的制造方法', 'JP2021155841A', '【課題】ジェットミル粉砕による粉砕能率を向上させる。\n\n【解決手段】本開示のR-T-B系焼結磁石用合金粉末の製造方法は分級ロータを備えるジェットミル粉砕装置にR-T-B系焼結磁石用合金(Rは希土類元素のうち少なくとも1種であり、Nd及びPrの少なくとも1種を必ず含み、Tは遷移金属元素のうち少なくとも1種でありFeを必ず含む。Bはホウ素である)の粗粉砕粉を供給する工程と、前記ジェットミル粉砕装置の内部で前記粗粉砕粉を粉砕して微粉砕粉を形成し、前記分級ロータによって前記微粉砕粉を排出する粉砕工程と、を含み、前記粉砕工程では、ジェットミル粉砕装置の内部における停留粉末重量および前記分級ロータの回転速度の両方の制御を行う。\n\n【選択図】図1', '本发明的目的是通过喷射研磨改善研磨能力。\n\n根据本公开的RTB基烧结磁体的合金粉末的制造方法是设置有分级转子(R是稀土元素,ND中的至少一个的喷射磨机装置(R是至少一个Pr,T是过渡金属元素中的至少一个,并且必须包括Fe。B是供应硼的粗粉粉末的步骤,并在喷射磨机粉碎机内部。粗粉粉末地研磨以形成细碎的粉末,以及研磨工艺应由级转子排出,并且在破碎步骤中,喷射磨机的重量和上述控制速度的分级转子的转速。\n\n图1', 'JP2020159620', 1600876800, 'JP2021155841A', 1633536000, 1633536000, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, '2020057386', 'JP', 1585238400, 1, 2, NULL, NULL, 1, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2000317339A', NULL, NULL, 1, '\\20220510\\28baa7c3bc5a4366a8620c49706a69f2.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 40433, 40435, 40434, 2);
INSERT INTO `os_patent` VALUES (23617, 'R-TM-B系焼結磁石', '基于R-TM-B的烧结磁体', 'JP6984716B2', '【課題】Coを添加することなく高い耐食性と低い応力とを有するR-TM-B系焼結磁石を提供する。\n\n【解決手段】 24.5〜34.5質量%のR(RはYを含む希土類元素から選ばれる少なくとも1種)と、0.85〜1.15質量%のBと、0.1質量%未満のCoと、0.07質量%以上0.3質量%未満のGaと、0.15〜0.4質量%のCuと、不可避不純物と、残部Feとを含有することを特徴とするR-TM-B系焼結磁石。\n\n【選択図】図1', '提供R-TM-B基烧结磁体,其具有高耐腐蚀性和低应力而无需添加CO。 \n\n 质量r(以含有y)的稀土元素选自稀土元素中的至少一种,0.85-1.15重量%的24.5至34.5%,0.1重量%,0.3重量%或更高0.3。a r -TM-B基烧结磁体,其Cu为0.15至0.4质量%,Cu为0.15至0.4质量%,以及残留部分Fe。 \n\n 图1', 'JP2020189487', 1605196800, 'JP6984716B2', 1640102400, 1615392000, NULL, 1638115200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 4, 0, 0, 0, NULL, NULL, NULL, '2015066185', 'JP', 1427385600, 13, 13, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '秋山 直人', NULL, 'JP2007305878A | JP2009135393A | JP2014209546A | JP2016143828A | WO2009150843A1', NULL, NULL, 1, '\\20220510\\a8c9a54fbe614f9e9168c61d8b9534dc.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 40038, 40040, 40039, 13);
INSERT INTO `os_patent` VALUES (23618, 'R-TM-B系焼結磁石', '基于R-TM-B的烧结磁体', 'JP6984715B2', '【課題】 Coを添加することなく高い耐食性と低い応力とを有するR-TM-B系焼結磁石を提供する。\n\n【解決手段】 24.5〜34.5質量%のR(RはYを含む希土類元素から選ばれる少なくとも1種)と、0.96〜1.15質量%のBと、0.1質量%未満のCoと、0.3質量%超0.5質量%以下のGaと、0〜0.15質量%のCuと、不可避不純物と、残部Feとを含有することを特徴とするR-TM-B系焼結磁石。\n\n【選択図】図1', '提供R-TM-B基烧结磁体,其具有高耐腐蚀性和低应力而无需添加CO。 \n\n 24.5至34.5质量%R(R是选自含有Y)的稀土元素的至少一种,0.96-1.15重量%B,0.3质量%,0.1重量%,0.3重量%0.3重量% 0.5。一种基于R-TM-B的烧结磁体,其包含质量%或更小的Cu,Cu为0至0.15质量%,不允许的杂质和剩余部分Fe。 \n\n 图1', 'JP2020189481', 1605196800, 'JP6984715B2', 1640102400, 1615392000, NULL, 1638115200, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B2', NULL, NULL, 13, 4, 0, 0, 0, NULL, NULL, NULL, '2015066185', 'JP', 1427385600, 13, 13, NULL, NULL, 5, 0, 0, 0, 0, NULL, NULL, NULL, '秋山 直人', NULL, 'JP2007305878A | JP2009135393A | JP2014209546A | JP2016143828A | WO2009150843A1', NULL, NULL, 1, '\\20220510\\a54830cb9b484369a1a39d480e8acf73.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 40038, 40040, 40039, 13);
INSERT INTO `os_patent` VALUES (23619, 'Method for manufacturing r-t-b based sintered magnet, and r-t-b based sintered magnet', 'r-t-b基烧结磁铁的制造方法及r-t-b基烧结磁铁', 'WO2021132476A1', 'A method for manufacturing an R-T-B based sintered magnet according the present disclosure comprises: a step for preparing a coarse ground powder which is made from an alloy for R-T-B based sintered magnets and which has an average particle size of 10-500 μm; a step for obtaining a fine powder having an average particle size of 2.0-4.5 μm, by feeding the coarse ground powder to a jet mill device that has a grinding chamber filled with inert gas and grinding the coarse ground powder; and a step for producing a sintered body of the fine powder, wherein the inert gas has been humidified, and the oxygen content of the R-T-B based sintered magnet is 1000-3500 ppm by mass.', '用于制备本公开的R-T-B基烧结磁体的方法是制备用于基于R-T-B基烧结磁体的粗粉粉末的步骤,其平均粒径为10μm以上且500μm或更小,并且磨削室粗糙将粉碎的粉末供应到填充有活性气体的喷射磨机装置以研磨粗粉碎粉末,并且平均粒径为2.0μm或更高且4.5μm或更小的粉碎粉末,以及细粉的细粉制备烧结体的方法,惰性气体被加湿,RTB的烧结磁体的氧的含量为1000ppm以上且3500ppm或更小。', 'PCT/JP2020/048486', 1608739200, 'WO2021132476A1', 1625068800, 1625068800, NULL, NULL, '世界知识产权组织', NULL, NULL, NULL, NULL, 6, 2, NULL, NULL, NULL, NULL, 'A1', NULL, NULL, 45, 8, 0, 0, 0, NULL, NULL, NULL, '2019235578 | 2020159614', 'JP | JP', 1577289600, 4, 4, NULL, NULL, 7, 0, 0, 0, 0, 'JP,2021-06-04', NULL, NULL, NULL, NULL, 'JP1992287304A | JP1994140220A | JP1998022154A | JP2011060975A | JP2012158792A | JP2018142641A | JP2019169506A', NULL, NULL, 1, '\\20220510\\0f1ced5a21f0467289f3edc299193d62.png', NULL, NULL, 1, NULL, NULL, 11, NULL, NULL, NULL, 40436, 40438, 40437, 4);
INSERT INTO `os_patent` VALUES (23620, 'R-T-B系焼結磁石の製造方法およびR-T-B系焼結磁石', '制造R-T-B基烧结磁铁和R-T-B基烧结磁体的方法', 'JP6947344B1', '本開示のR-T-B系焼結磁石の製造方法は、平均粒度が10μm以上500μm以下のR-T-B系焼結磁石用合金の粗粉砕粉を準備する工程と、粉砕室が不活性ガスで満たされたジェットミル装置に前記粗粉砕粉を供給して前記粗粉砕粉の粉砕を行い、平均粒度が2.0μm以上4.5μm以下の微粉末を得る工程と、前記微粉末の焼結体を作製する工程と、を含み、前記不活性ガスは加湿されており、前記R-T-B系焼結磁石の酸素の含有量が質量比で1000ppm以上3500ppm以下である。', '用于制造本公开的RTB烧结磁体的方法包括平均粒度的步骤,以制备粗糙的粉碎粉末500μm之后的500μm之后,通过供应填充射流研磨室用惰性气体填充有惰性气体。粗粉碎的粗粉碎粉末和粗粉碎粉末的碎片,平均粒度的步骤,得到4.5μm或更小的细粉或2.0μm,制备粉末粉末的步骤粉碎,其中,所述惰性气体被加湿,RTB烧结磁体的氧含量为1000ppm或3500ppm或更小质量比。', 'JP2021532090', 1608739200, 'JP6947344B1', 1634054400, 1634054400, NULL, 1632153600, '日本', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 23, 8, 0, 0, 0, NULL, NULL, NULL, '2019235578 | 2020159614', 'JP | JP', 1577289600, 4, 4, NULL, NULL, 6, 0, 0, 0, 0, NULL, NULL, NULL, '木下 直哉', NULL, 'JP1992287304A | JP1994140220A | JP1996148317A | JP1998022154A | JP2011060975A | JP2012158792A', NULL, NULL, 1, '\\20220510\\ec293a599dd2439786f0eb2e126aa77c.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 40436, 40438, 40437, 4);
INSERT INTO `os_patent` VALUES (23621, '磁気クランプ装置用マグネットユニット', '用于磁性夹紧装置的磁铁单元', 'JP2021153179A', '【課題】低コストであり、かつ、永久磁石の高磁気特性を最大限に活かした磁気クランプ装置用マグネットユニットを提供する。\n\n【解決手段】ハウジング2内に収容されている磁気クランプ装置用マグネットユニット10は、一方の面がクランプ対象物1を吸着する吸着面となる一対の平面を有する磁性体12と、磁性体の側面の周囲に配置されたR-T-B系永久磁石14と、磁性体の他方の平面に対向して配置されたFe-Cr-Co系永久磁石16と、Fe-Cr-Co系永久磁石16の側面の周囲に配置されたコイル18とを有する。\n\n【選択図】図1', '本发明的一个目的是提供一种用于磁性夹具装置的磁体单元,其是低成本并且最大的永磁体的高磁特性。\n\n解决方案:用于容纳在壳体2中的磁性夹具装置的磁体单元10是磁体12,该磁体12具有一对平面,该平面具有一对平面,其中一个表面是吸附表面,用于吸附夹紧物体1,以及侧表面磁性物质。Fe-Cr-Co基永磁体16围绕磁体的另一个平面和Fe-Cr-Co基永磁体16的侧表面和Fe-Cr的侧表面围绕基于CO基永磁体16具有布置在的线圈18。\n\n图1', 'JP2021037836', 1615219200, 'JP2021153179A', 1632931200, 1632931200, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, '2020048553', 'JP', 1584547200, 1, 1, NULL, NULL, 2, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP2005515080A | WO2019240201A1', NULL, NULL, 1, '\\20220510\\1d77db5632e94b96ba9a99875e4e15d1.png', NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 40439, 40441, 40440, 1);
INSERT INTO `os_patent` VALUES (23622, 'Production method for rare-earth sintered magnet, and wet-molding device', '稀土烧结磁体的生产方法及湿法成型装置', 'WO2021193115A1', 'The production method for a rare-earth sintered magnet according to the present disclosure comprises: a step for producing a molded article by compression-molding a slurry containing a rare-earth element-containing alloy powder and a dispersion medium using a wet-molding device; and a step for sintering the molded article. When the slurry is being poured into the inside of a space forming a cavity of the wet-molding device, a magnetic field is not applied. By pressing of the slurry, the dispersion medium contained in the slurry starts to be removed from the inside of the space.', '用于制备本公开的稀土基烧结磁体的方法是使用含有稀土元素的合金粉末和包括使用湿式成形装置的分散介质的浆料并产生模制体的浆料的压缩成型的步骤;浆料当浆料内部包括在浆料中时,当浆料内部注入形成湿成型装置的空间内时,浆料在形成湿成型设备的空腔内部的空间内部。它开始排出分散介质从空间的内部。', 'PCT/JP2021/009861', 1615392000, 'WO2021193115A1', 1632931200, 1632931200, NULL, NULL, '世界知识产权组织', NULL, NULL, NULL, NULL, 6, 2, NULL, NULL, NULL, NULL, 'A1', NULL, NULL, 48, 1, 0, 0, 0, NULL, NULL, NULL, '2020055645', 'JP', 1585152000, 1, 1, NULL, NULL, 4, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP1996088133A | JP1997094814A | JP2008251910A | JP2020027938A', NULL, NULL, 1, '\\20220510\\82c03b14d307404980089ae95d8f0217.png', NULL, NULL, 1, NULL, NULL, 14, NULL, NULL, NULL, 40442, 40444, 40443, 1);
INSERT INTO `os_patent` VALUES (23623, 'R-T-B系焼結磁石の製造方法', '基于R-T-B基烧结磁体的方法', 'JP2022023024A', '【課題】粉末粒度が小さくなると生じやすい窒化·酸化による磁石特性の劣化を抑制する。 【解決手段】本開示のR-T-B系焼結磁石の製造方法は、平均粒度が10μm以上500μm以下のR-T-B系焼結磁石用合金の粗粉砕粉を準備する工程と、粉砕室が不活性ガスで満たされたジェットミル装置に前記粗粉砕粉を供給して前記粗粉砕粉の粉砕を行い、平均粒度が2.0μm以上4.5μm以下の微粉末を得る工程と、前記微粉末の焼結体を作製する工程と、を含み、前記不活性ガスは加湿されており、前記R-T-B系焼結磁石の酸素の含有量が1000ppm以上3500ppm以下である。 【選択図】図1', '要解决的问题:抑制由于粉末粒径减少时可能发生的氮化和氧化而导致的磁体特性的降低。根据本公开的制造RTB的烧结磁体的方法是制备用于RTB的烧结磁体的粗粉的步骤,其平均粒径为10μm以上且500μm或更小,以及破碎填充有惰性气体的腔室。将粗磨粉末供应到燃料铣削装置,粗磨粉末供应粗磨粉末,粒径为2.0μm以上且4.5μm或更小,并且细粉的烧结体产生。惰性气体被加湿,惰性气体被加湿,RTB的烧结磁体的氧气含量为1000ppm以上且3500ppm或更小。图1', 'JP2021137689', 1629907200, 'JP2022023024A', 1644163200, 1644163200, NULL, NULL, '日本', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 24, 8, 0, 0, 0, NULL, NULL, NULL, '2019235578 | 2020159614', 'JP | JP', 1577289600, 4, 4, NULL, NULL, 2, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 'JP1994140220A | JP1996148317A', NULL, NULL, 1, '\\20220510\\9a8e98c0019a4fbabc43cc536a869ff4.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40436, 40438, 40437, 4);
INSERT INTO `os_patent` VALUES (23624, 'Surface treating process, surface treating apparatus, vapor-depositing material, and rare earth meta', '表面处理过程,表面处理装置,储层材料和稀土元', 'PH12004000427B1', NULL, NULL, 'PH12004000427', NULL, 'PH12004000427B1', 1257350400, 1200844800, NULL, 1257350400, '菲律宾', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B1', NULL, NULL, 26, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, '908', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 40445, 40447, 40446, 2);
INSERT INTO `os_patent` VALUES (23625, '3D微发光二极管显示装置', '3D微发光二极管显示装置', 'CN105911709A', '本发明提供一种3D微发光二极管显示器，通过在微发光二极管显示面板上增设层叠设置的一维金属光栅结构和二维金属光栅结构，通过一维金属光栅结构实现对微发光二极管显示面板发出的光线进行偏光，产生线偏振光，通过二微金属光栅结构实现1/4波片的功能，对一维金属光栅产生的线偏振光再进行处理，产生右旋圆偏振光和左旋圆偏振光，以实现3D显示，充分发挥微发光二极管显示面板高分辨率、高亮度、和小型化的优势，实现高品质的3D显示。', '本发明提供一种3D微发光二极管显示器，通过在微发光二极管显示面板上增设层叠设置的一维金属光栅结构和二维金属光栅结构，通过一维金属光栅结构实现对微发光二极管显示面板发出的光线进行偏光，产生线偏振光，通过二微金属光栅结构实现1/4波片的功能，对一维金属光栅产生的线偏振光再进行处理，产生右旋圆偏振光和左旋圆偏振光，以实现3D显示，充分发挥微发光二极管显示面板高分辨率、高亮度、和小型化的优势，实现高品质的3D显示。', 'CN201610460334.6', 1466524800, 'CN105911709A', 1472572800, 1472572800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 6, 20, 17, 20, 2, NULL, '909', NULL, NULL, NULL, 'CN101617263A | CN101938665A | CN102213838A | CN105378552A | CN105493298A | US20120162552A1', 'CN106646904A | CN106997745A | CN108133671A | CN108133671B | CN108196393A | CN108196393B | CN109960038A | CN109960038B | CN110050511A | CN110050511B | CN112018221A | CN112018221B | CN113228287A | EP3550937A4 | EP3550937B1 | US10769984B2 | US10861906B2 | US11134237B2 | US11187839B2 | WO2018161583A1', '陈娟 等: \"两种亚波长金属波片的透射特性对比\", 《光学学报》 | 陈娟 等: \"二维金属矩形光栅的偏振控制及其透射特性\", 《光学学报》', 1, '\\20220510\\aa4f6519cb574699b446db4ca630644e.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40448, 40450, 40449, 3);
INSERT INTO `os_patent` VALUES (23626, '3D显示装置', '3D显示装置', 'CN105929552A', '本发明提供一种3D显示装置，该3D显示装置采用微发光二极管显示装置来显示图像，并在微发光二极管显示装置的出光面一侧设置微透镜封装阵列层(4)，该微透镜封装阵列层(4)同时具备对微发光二极管(2)进行封装保护和区分左右眼图像实现3D显示的作用，利用该多功能的微透镜封装阵列层(4)能够在简化微发光二极管3D显示装置结构的同时实现裸眼3D显示，降低生产成本，提升显示品质。', '本发明提供一种3D显示装置，该3D显示装置采用微发光二极管显示装置来显示图像，并在微发光二极管显示装置的出光面一侧设置微透镜封装阵列层(4)，该微透镜封装阵列层(4)同时具备对微发光二极管(2)进行封装保护和区分左右眼图像实现3D显示的作用，利用该多功能的微透镜封装阵列层(4)能够在简化微发光二极管3D显示装置结构的同时实现裸眼3D显示，降低生产成本，提升显示品质。', 'CN201610454894.0', 1466524800, 'CN105929552A', 1473177600, 1473177600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 6, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 9, 3, 3, 3, 2, NULL, '909', NULL, NULL, NULL, 'CN101242545A | CN102341740A | CN103995361A | CN105182553A | CN105185266A | CN105378552A | CN105493298A | CN204758851U | US20120162552A1', 'CN106707533A | CN108987554A | US10642054B2', '庄思聪 等: \"重铬酸铵明胶微透镜阵列的研究\", 《光学学报》 | 戴永江: \"《激光与红外探测原理》\", 31 October 2012', 1, '\\20220510\\bab0f28bfce34773a205cb61ce0936c0.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 40451, 40453, 40452, 3);
INSERT INTO `os_patent` VALUES (23627, '微发光二极管显示面板', '微发光二极管显示面板', 'CN105976725B', '本发明提供一种微发光二极管显示面板，该微发光二极管显示面板的子像素区域(2)内设有尺寸小于子像素区域(2)的尺寸的微发光二极管(3)，并在该微发光二极管(3)的下方设有反射透镜层(5)，通过反射透镜层(5)将微发光二极管(3)照射到反射透镜层(5)上的光线反射到微发光二极管(3)的原有发光区域的外围，进而扩大所述子像素区域(2)中发光的区域的面积，提升显示品质，降低生产成本。', '本发明提供一种微发光二极管显示面板，该微发光二极管显示面板的子像素区域(2)内设有尺寸小于子像素区域(2)的尺寸的微发光二极管(3)，并在该微发光二极管(3)的下方设有反射透镜层(5)，通过反射透镜层(5)将微发光二极管(3)照射到反射透镜层(5)上的光线反射到微发光二极管(3)的原有发光区域的外围，进而扩大所述子像素区域(2)中发光的区域的面积，提升显示品质，降低生产成本。', 'CN201610448852.6', 1466352000, 'CN105976725B', 1554134400, 1474992000, NULL, 1554134400, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 5, 5, NULL, NULL, 3, 0, 0, 0, 0, NULL, '909', NULL, '姜颖婷', NULL, 'CN101740670A | CN105129259A | CN105144387A', NULL, NULL, 1, '\\20220510\\330587ec4af8454cb2c838e00b16add4.png', NULL, NULL, 1, NULL, NULL, 11, NULL, NULL, NULL, 40454, 40456, 40455, 5);
INSERT INTO `os_patent` VALUES (23628, '微发光二极管阵列的转印方法', '微发光二极管阵列的转印方法', 'CN106058010B', '本发明提供一种微发光二极管阵列的转印方法，在接受基板上设置数个接受凸起，微发光二极管被置于接受基板上相应的接受凸起上，因此，对于同一个传送头，通过改变数个接受凸起在接受基板上的排列方式，便可实现在接受基板上转印不同排列方式的微发光二极管阵列。', '本发明提供一种微发光二极管阵列的转印方法，在接受基板上设置数个接受凸起，微发光二极管被置于接受基板上相应的接受凸起上，因此，对于同一个传送头，通过改变数个接受凸起在接受基板上的排列方式，便可实现在接受基板上转印不同排列方式的微发光二极管阵列。', 'CN201610597458.9', 1469462400, 'CN106058010B', 1548950400, 1477411200, NULL, 1548950400, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 4, 0, 0, 0, 0, NULL, '909', NULL, '树奇', NULL, 'CN102237348A | CN102903804A | CN105129259A | CN105576088A', NULL, NULL, 1, '\\20220510\\4fcc922ea56946ccaaedaf1f0dceb802.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40457, 40459, 40458, 2);
INSERT INTO `os_patent` VALUES (23629, '微发光二极管显示面板', '微发光二极管显示面板', 'CN106097900B', '本发明提供一种微发光二极管显示面板，通过将在基板(1)上设置阵列排布的多个显示区(2)，并在各个显示区(2)内均匀排布多个微发光二极管(3)，能够实现微发光二极管显示面板的高分辨率显示，并通过控制各个显示区内微发光二极管的数量，在消除纱门效应的同时有效控制生产成本，提升微发光二极管显示面板的市场竞争力。', '本发明提供一种微发光二极管显示面板，通过将在基板(1)上设置阵列排布的多个显示区(2)，并在各个显示区(2)内均匀排布多个微发光二极管(3)，能够实现微发光二极管显示面板的高分辨率显示，并通过控制各个显示区内微发光二极管的数量，在消除纱门效应的同时有效控制生产成本，提升微发光二极管显示面板的市场竞争力。', 'CN201610458152.5', 1466524800, 'CN106097900B', 1556553600, 1478620800, NULL, 1556553600, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 7, 7, NULL, NULL, 5, 0, 0, 0, 0, NULL, '909', NULL, '田卓', NULL, 'CN102737578A | CN104134421A | CN105324858A | US20130016494A1 | WO2016062835A1', NULL, NULL, 1, '\\20220510\\72c48c95ff0546389b036f4a424faece.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40460, 40462, 40461, 7);
INSERT INTO `os_patent` VALUES (23630, '微发光二极管显示面板及其制作方法', '微发光二极管显示面板及其制作方法', 'CN106098697B', '本发明提供一种微发光二极管显示面板及其制作方法，该微发光二极管显示面板包括：基板(1)、设于所述基板(1)上的阵列排布的多个微发光二极管(2)、覆盖所述多个微发光二极管(2)的透明的封装层(3)、以及设于所述封装层(3)上的量子点层(4)，通过在封装层(3)上增设量子点层(4)，利用微发光二极管(2)的发出的短波长光激发量子点层(4)发光，从而使微发光二极管(2)和量子点层(4)共同组成微发光二极管显示面板的基本显示单元，能够扩大微发光二极管显示面板的色域，提升微发光二极管显示面板的显示品质。', '本发明提供一种微发光二极管显示面板及其制作方法，该微发光二极管显示面板包括：基板(1)、设于所述基板(1)上的阵列排布的多个微发光二极管(2)、覆盖所述多个微发光二极管(2)的透明的封装层(3)、以及设于所述封装层(3)上的量子点层(4)，通过在封装层(3)上增设量子点层(4)，利用微发光二极管(2)的发出的短波长光激发量子点层(4)发光，从而使微发光二极管(2)和量子点层(4)共同组成微发光二极管显示面板的基本显示单元，能够扩大微发光二极管显示面板的色域，提升微发光二极管显示面板的显示品质。', 'CN201610422104.0', 1465920000, 'CN106098697B', 1554134400, 1478620800, NULL, 1554134400, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 8, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 5, 5, NULL, NULL, 3, 0, 0, 0, 0, NULL, '909', NULL, '刘杰铭', NULL, 'CN103608921A | CN105339996A | CN105580144A', NULL, NULL, 1, '\\20220510\\e2f7a638dc5b4e83ab1ddec15bc29f9b.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40463, 40465, 40464, 5);
INSERT INTO `os_patent` VALUES (23631, '微发光二极管显示器', '微发光二极管显示器', 'CN106098720A', '本发明提供一种微发光二极管显示器，所述微发光二极管显示器采用白色微发光二极管(211)加上红色滤光层(212)，或者绿色微发光二极管加上红色光致发光层，或者蓝色微发光二极管加上红色光致发光层的方法呈现红色子像素(21)，不需要制作红色微发光二极管，降低了微发光二极管显示器的制作难度，同时通过在微发光二极管上增加滤光层，能够增强微发光二极管显示器的颜色纯度，拓宽微发光二极管显示器的色域，增强微发光二极管显示器的显示效果。', '本发明提供一种微发光二极管显示器，所述微发光二极管显示器采用白色微发光二极管(211)加上红色滤光层(212)，或者绿色微发光二极管加上红色光致发光层，或者蓝色微发光二极管加上红色光致发光层的方法呈现红色子像素(21)，不需要制作红色微发光二极管，降低了微发光二极管显示器的制作难度，同时通过在微发光二极管上增加滤光层，能够增强微发光二极管显示器的颜色纯度，拓宽微发光二极管显示器的色域，增强微发光二极管显示器的显示效果。', 'CN201610448851.1', 1466352000, 'CN106098720A', 1478620800, 1478620800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 8, 13, 13, 13, 0, NULL, '909', NULL, NULL, NULL, 'CN102214651A | CN103123925A | CN103779375A | CN105047681A | CN105446009A | CN105460009A | US20070210703A1', 'CN106898628A | CN106898628B | CN107038994A | CN107038994B | CN107579107A | CN108831317A | CN108831317B | CN108899332A | CN109994585A | US10504450B2 | US10839742B2 | WO2018152887A1 | WO2020015353A1', NULL, 1, '\\20220510\\20e685af83924956a2171fbfe4998186.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40466, 40468, 40467, 3);
INSERT INTO `os_patent` VALUES (23632, '转印微发光二极管的方法及显示面板的制作方法', '转印微发光二极管的方法及显示面板的制作方法', 'CN106229326B', '本发明提供一种在曲面基板上转印微发光二极管的方法及曲面微发光二极管显示面板的制作方法。本发明的在曲面基板上转印微发光二极管的方法，通过两次微转印制程将微发光二极管转印到曲面基板上，其中，在第二次微转印制程中，具有柔性的第二传送头拾取中转基板上的微发光二极管，然后随曲面基板的形状发生形变而贴附于所述曲面基板上，从而将所拾取的微发光二极管放置于曲面基板上，实现了微发光二极管在曲面基板的弧面、球面等曲面上的转印，从而可进一步用于制作曲面微发光二极管显示面板的显示像素阵列，进而用于实现曲面显示效果。', '本发明提供一种在曲面基板上转印微发光二极管的方法及曲面微发光二极管显示面板的制作方法。本发明的在曲面基板上转印微发光二极管的方法，通过两次微转印制程将微发光二极管转印到曲面基板上，其中，在第二次微转印制程中，具有柔性的第二传送头拾取中转基板上的微发光二极管，然后随曲面基板的形状发生形变而贴附于所述曲面基板上，从而将所拾取的微发光二极管放置于曲面基板上，实现了微发光二极管在曲面基板的弧面、球面等曲面上的转印，从而可进一步用于制作曲面微发光二极管显示面板的显示像素阵列，进而用于实现曲面显示效果。', 'CN201610588740.0', 1469116800, 'CN106229326B', 1552320000, 1481644800, NULL, 1552320000, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 0, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 3, 0, 0, 0, 0, NULL, '909', NULL, '苍凯', NULL, 'CN105129259A | CN105576088A | US20160155892A1', NULL, NULL, 1, '\\20220510\\4ab64047bafd4442bdebf73d56d4550a.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40469, 40471, 40470, 2);
INSERT INTO `os_patent` VALUES (23633, '微发光二极管及其制造方法和显示器', '微发光二极管及其制造方法和显示器', 'CN106229394B', '本发明公开了一种微发光二极管及其制备方法和显示器，该方法包括：形成缓冲层柱体；在缓冲层柱体外壁依次形成PN结的构成层体；在PN结的构成层体外侧形成第一电极，且去掉缓冲层柱体后，在PN结的构成层体内侧形成第二电极，第一电极和第二电极在PN结的构成层之外相互绝缘。通过上述方法制成的微发光二极管为管状结构，管状的微发光二极管结构能有效降低第一电极和第二电极之间经由PN结的构成层通路的阻抗，从而提高导电率，增加微发光二极管的发光效率；同时，其微米管/纳米管的结构增加了PN结的有效作用面积，增加电流密度，从而有效提高微发光二极管的发光效率，改善微发光二极管的单色性。', '本发明公开了一种微发光二极管及其制备方法和显示器，该方法包括：形成缓冲层柱体；在缓冲层柱体外壁依次形成PN结的构成层体；在PN结的构成层体外侧形成第一电极，且去掉缓冲层柱体后，在PN结的构成层体内侧形成第二电极，第一电极和第二电极在PN结的构成层之外相互绝缘。通过上述方法制成的微发光二极管为管状结构，管状的微发光二极管结构能有效降低第一电极和第二电极之间经由PN结的构成层通路的阻抗，从而提高导电率，增加微发光二极管的发光效率；同时，其微米管/纳米管的结构增加了PN结的有效作用面积，增加电流密度，从而有效提高微发光二极管的发光效率，改善微发光二极管的单色性。', 'CN201610910337.5', 1476806400, 'CN106229394B', 1559836800, 1481644800, NULL, 1559836800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 12, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 5, 5, NULL, NULL, 5, 0, 0, 0, 0, NULL, '910', NULL, '罗晓雅', NULL, 'CN102544279A | CN103035808A | CN104112802A | CN105932121A | US20150325745A1', NULL, NULL, 1, '\\20220510\\f7ed968662f54e599a4b8eee39e7821c.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 40472, 40474, 40473, 5);
INSERT INTO `os_patent` VALUES (23634, '一种量子点LED背光光源结构及显示装置', '一种量子点LED背光光源结构及显示装置', 'CN106356368A', '本发明提供一种量子点LED背光光源结构及显示装置，该量子点LED背光光源结构包括：反光杯壳，用于安装量子点LED；蓝光芯片结构与红光芯片，设于所述反光杯壳内部的底面，所述蓝光芯片结构至少为一个，所述红光芯片至少为一个；其中，所述蓝光芯片结构包括蓝光芯片及设在其上的绿光量子点荧光粉层，所述蓝光芯片结构与所述红光芯片共同形成所述量子点LED。本发明有效地减少了量子点封装LED背光的Cd含量，实现了量子点封装结构满足RoHS和高色域覆盖的目标。', '本发明提供一种量子点LED背光光源结构及显示装置，该量子点LED背光光源结构包括：反光杯壳，用于安装量子点LED；蓝光芯片结构与红光芯片，设于所述反光杯壳内部的底面，所述蓝光芯片结构至少为一个，所述红光芯片至少为一个；其中，所述蓝光芯片结构包括蓝光芯片及设在其上的绿光量子点荧光粉层，所述蓝光芯片结构与所述红光芯片共同形成所述量子点LED。本发明有效地减少了量子点封装LED背光的Cd含量，实现了量子点封装结构满足RoHS和高色域覆盖的目标。', 'CN201610987365.7', 1478534400, 'CN106356368A', 1485273600, 1485273600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 3, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 6, 3, 3, 3, 0, NULL, '911', NULL, NULL, NULL, 'CN105428497A | CN203218260U | CN2821871Y | CN2821874Y | CN2821875Y | US20070108455A1', 'CN106647037A | CN109860427A | WO2020134248A1', NULL, 1, '\\20220510\\e26d40750c174bfd932522a6d11f568d.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40475, 40477, 40476, 2);
INSERT INTO `os_patent` VALUES (23635, '微发光二极管显示面板及其修复方法', '微发光二极管显示面板及其修复方法', 'CN106684098B', '本发明提供一种微发光二极管显示面板及其修复方法。该微发光二极管显示面板的阳极被划分为多个相互间隔的电极块，各个电极块通过连接线电性连接成一体，每一个电极块上对应设置一个微发光二极管，当其中一个微发光二极管出现不良时，可通过切断与设置该微发光二极管的电极板电性连接的连接线，将该微发光二极管单独修复为暗点，其他微发光二极管正常发光，能够简化微发光二极管显示面板的修复过程，提升微发光二极管显示面板的修复的成功率，保证微发光二极管显示面板的修复效果。', '本发明提供一种微发光二极管显示面板及其修复方法。该微发光二极管显示面板的阳极被划分为多个相互间隔的电极块，各个电极块通过连接线电性连接成一体，每一个电极块上对应设置一个微发光二极管，当其中一个微发光二极管出现不良时，可通过切断与设置该微发光二极管的电极板电性连接的连接线，将该微发光二极管单独修复为暗点，其他微发光二极管正常发光，能够简化微发光二极管显示面板的修复过程，提升微发光二极管显示面板的修复的成功率，保证微发光二极管显示面板的修复效果。', 'CN201710010361.8', 1483632000, 'CN106684098B', 1568044800, 1494950400, NULL, 1568044800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 18, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 5, 5, NULL, NULL, 5, 0, 0, 0, 0, NULL, '909', NULL, '沈冬云', NULL, 'CN105144387A | CN105339996A | CN105518888A | CN106098697A | CN106206651A', NULL, NULL, 1, '\\20220510\\092760df09d641fbaa99216fc9a41892.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, NULL, 40478, 40480, 40479, 5);
INSERT INTO `os_patent` VALUES (23636, '微发光二极管显示面板及其制造方法', '微发光二极管显示面板及其制造方法', 'CN106782128A', '本发明实施例提供一种微发光二极管显示面板及其制造方法，所述显示面板包括衬底基板和多个微发光二极管，所述衬底基板包括多个阵列设置的子像素区域，每个所述子像素区域中设有凹槽，所述凹槽内表面覆盖有相互绝缘的第一反光电极和第二反光电极，每个所述微发光二极管设置于一个所述凹槽中，所述微发光二极管的一管脚与所述第一反光电极连接，另一管脚与所述第二反光电极连接，所述第一反光电极和所述第二反光电极将所述微发光二极管发出的光线反射回所述凹槽，从而减少了光能的损耗，提升光源利用率。', '本发明实施例提供一种微发光二极管显示面板及其制造方法，所述显示面板包括衬底基板和多个微发光二极管，所述衬底基板包括多个阵列设置的子像素区域，每个所述子像素区域中设有凹槽，所述凹槽内表面覆盖有相互绝缘的第一反光电极和第二反光电极，每个所述微发光二极管设置于一个所述凹槽中，所述微发光二极管的一管脚与所述第一反光电极连接，另一管脚与所述第二反光电极连接，所述第一反光电极和所述第二反光电极将所述微发光二极管发出的光线反射回所述凹槽，从而减少了光能的损耗，提升光源利用率。', 'CN201710055160.X', 1485187200, 'CN106782128A', 1496160000, 1496160000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 5, 27, 23, 27, 0, NULL, '912', NULL, NULL, NULL, 'CN102903837A | CN105339996A | CN106098697A | JP2006222271A | JP2007214474A', 'CN106997745A | CN107393940A | CN107393940B | CN108022963A | CN108022963B | CN108039125A | CN108039125B | CN108039359A | CN108039359B | CN108470526A | CN108591974A | CN110246860A | CN110246860B | CN110911437A | CN111129058A | CN111211117A | CN111211213A | CN111211213B | CN112578594A | CN112578597A | CN112698528A | CN112928192A | CN112928196A | US10512159B2 | US10769984B2 | WO2021097736A1 | WO2021114416A1', NULL, 1, '\\20220510\\1e1890acb67d418d98576df268358a2e.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40481, 40483, 40482, 3);
INSERT INTO `os_patent` VALUES (23637, '输入电压上升时间控制电路', '输入电压上升时间控制电路', 'CN106782425B', '本发明提供一种输入电压上升时间控制电路。该输入电压上升时间控制电路通过在面板驱动单元内设置电压控制单元，电压控制单元包括：电压上升斜率侦测单元、第一比较器、第二比较器、控制单元、及电容单元，电压上升斜率侦测单元侦测电容单元的第二端的电压上升斜率并输出至第一比较器及第二比较器，所述第一比较器、及第二比较器分别将该电压上升斜率与对应预设的最小开机时间的第一斜率及对应预设的最大开机时间的第二斜率进行比较，控制模块根据比较结果改变所述电容单元的电容量，从而调节电容单元的第二端的电压上升至输入电压的时间，控制面板开机时间符合正常开机时间范围，提高产品品质。', '本发明提供一种输入电压上升时间控制电路。该输入电压上升时间控制电路通过在面板驱动单元内设置电压控制单元，电压控制单元包括：电压上升斜率侦测单元、第一比较器、第二比较器、控制单元、及电容单元，电压上升斜率侦测单元侦测电容单元的第二端的电压上升斜率并输出至第一比较器及第二比较器，所述第一比较器、及第二比较器分别将该电压上升斜率与对应预设的最小开机时间的第一斜率及对应预设的最大开机时间的第二斜率进行比较，控制模块根据比较结果改变所述电容单元的电容量，从而调节电容单元的第二端的电压上升至输入电压的时间，控制面板开机时间符合正常开机时间范围，提高产品品质。', 'CN201710204095.2', 1490803200, 'CN106782425B', 1559232000, 1496160000, NULL, 1559232000, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 12, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 4, 0, 0, 0, 0, NULL, '909', NULL, '史孝波', NULL, 'CN101471054A | CN102354487A | JP2006323311A | JP4059969B2', NULL, NULL, 1, '\\20220510\\e0519bdb62804804bd15a3c61cf52dd0.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40484, 40486, 40485, 2);
INSERT INTO `os_patent` VALUES (23638, '一种像素结构及制造方法', '一种像素结构及制造方法', 'CN106784203B', '本发明公开了一种像素结构及制造方法，包括：准备一基板；在基板上制造具有容置腔及隔离区的黑色光阻层；在黑色光阻层除隔离区外的表面涂布聚电解质溶液风干并形成聚电解质层；在聚电解质层表面涂布金属纳米粒子溶液风干并形成金属粒子层；将微发光二极管对位转移至黑色光阻层中。通过上述方式，本发明能够提高微发光二极管的光利用率。', '本发明公开了一种像素结构及制造方法，包括：准备一基板；在基板上制造具有容置腔及隔离区的黑色光阻层；在黑色光阻层除隔离区外的表面涂布聚电解质溶液风干并形成聚电解质层；在聚电解质层表面涂布金属纳米粒子溶液风干并形成金属粒子层；将微发光二极管对位转移至黑色光阻层中。通过上述方式，本发明能够提高微发光二极管的光利用率。', 'CN201710207848.5', 1490889600, 'CN106784203B', 1546531200, 1496160000, NULL, 1546531200, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 7, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 12, 12, NULL, NULL, 4, 2, 2, 2, 0, NULL, '910', NULL, '魏芳芳', NULL, 'CN104952899A | CN106229394A | CN1877875A | JP1992163455A', 'CN110265522A | CN110265522B', NULL, 1, '\\20220510\\e33ac2d784024fffb54a05de58f57c24.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 40487, 40489, 40488, 13);
INSERT INTO `os_patent` VALUES (23639, '微发光二极管的转印装置', '微发光二极管的转印装置', 'CN106876293B', '本发明提供了一种微发光二极管的转印装置，包括机架，在机架上设有加热面朝下的加热装置以及设于加热装置下方可移动的冷却装置，所述加热装置的加热面用于承载具有微发光二极管的供给衬底，供给衬底通过固定件固定于加热面上，所述冷却装置的冷却面用于承载接收衬底；所述冷却装置的冷却面与加热装置的加热面相对，在加热装置与冷却装置之间设有滚筒机构，滚筒机构固定在机架上，所述滚筒机构上设有可循环转动的传送带，所述传送带由转印膜片构成，在传送带的外表面上设有温控胶。与现有技术相比，通过设置加热装置以及冷却装置，中间通过滚筒式传送带，在传送带表面设置温控胶，实现微发光二极管的循环吸附以及转印，提高转印效率。', '本发明提供了一种微发光二极管的转印装置，包括机架，在机架上设有加热面朝下的加热装置以及设于加热装置下方可移动的冷却装置，所述加热装置的加热面用于承载具有微发光二极管的供给衬底，供给衬底通过固定件固定于加热面上，所述冷却装置的冷却面用于承载接收衬底；所述冷却装置的冷却面与加热装置的加热面相对，在加热装置与冷却装置之间设有滚筒机构，滚筒机构固定在机架上，所述滚筒机构上设有可循环转动的传送带，所述传送带由转印膜片构成，在传送带的外表面上设有温控胶。与现有技术相比，通过设置加热装置以及冷却装置，中间通过滚筒式传送带，在传送带表面设置温控胶，实现微发光二极管的循环吸附以及转印，提高转印效率。', 'CN201710093395.8', 1487606400, 'CN106876293B', 1552924800, 1497888000, NULL, 1552924800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 0, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 5, 5, NULL, NULL, 5, 0, 0, 0, 0, NULL, '913', NULL, '吴朦朦', NULL, 'CN103489845A | CN104485294A | CN105372864A | CN106170849A | WO2016154956A1', NULL, NULL, 1, '\\20220510\\9826d70c325b451195c9a6537b98946c.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40490, 40492, 40491, 5);
INSERT INTO `os_patent` VALUES (23640, '微发光二极管显示面板及制作方法', '微发光二极管显示面板及制作方法', 'CN106876408B', '本发明提供了一种微发光二极管显示面板，所述阵列基板上阵列排布有多个像素单元，每个像素单元至少包括三色的子像素单元，每个子像素单元中均设有至少一个与该子像素单元颜色相应的微发光二极管晶粒，相邻两个像素单元中颜色相同的子像素单元的微发光二极管晶粒的Bin级不同且峰值波长差值>2nm。本发明还提供了一种制作方法：在阵列基板的子像素单元内通过转印将对应颜色的微发光二极管晶粒从转印板上转印至相应的子像素单元中，每次转印的微发光二极管晶粒的颜色以及Bin级相同，相邻两个像素单元中颜色相同的子像素单元内的微发光二极管晶粒的Bin级不同且峰值波长差值>2nm。与现有技术相比，有效改善微发光二极管显示面板的颜色和亮度的均称性。', '本发明提供了一种微发光二极管显示面板，所述阵列基板上阵列排布有多个像素单元，每个像素单元至少包括三色的子像素单元，每个子像素单元中均设有至少一个与该子像素单元颜色相应的微发光二极管晶粒，相邻两个像素单元中颜色相同的子像素单元的微发光二极管晶粒的Bin级不同且峰值波长差值>2nm。本发明还提供了一种制作方法：在阵列基板的子像素单元内通过转印将对应颜色的微发光二极管晶粒从转印板上转印至相应的子像素单元中，每次转印的微发光二极管晶粒的颜色以及Bin级相同，相邻两个像素单元中颜色相同的子像素单元内的微发光二极管晶粒的Bin级不同且峰值波长差值>2nm。与现有技术相比，有效改善微发光二极管显示面板的颜色和亮度的均称性。', 'CN201710093979.5', 1487606400, 'CN106876408B', 1568649600, 1497888000, NULL, 1568649600, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 10, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 5, NULL, NULL, 5, 0, 0, 0, 0, NULL, '913', NULL, '赵端', NULL, 'CN102007612A | CN102962174A | CN105981094A | CN106097900A | US20160351539A1', NULL, NULL, 1, '\\20220510\\a2754b787d6841058b8415c4775d1a61.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40493, 40495, 40494, 5);
INSERT INTO `os_patent` VALUES (23641, '微发光二极管阵列基板及显示面板', '微发光二极管阵列基板及显示面板', 'CN106876552B', '本发明提供了一种微发光二极管阵列基板，包括玻璃基板，所述玻璃基板上依次形成有栅极、绝缘层，在绝缘层上形成有半导体层以及像素电极，在半导体层上设有源极、漏极，所述漏极与相邻的像素电极连接，在像素电极上覆盖有一层第一导电层，第一导电层上连接有微发光二极管。本发明还提供了一种显示面板，包括CF基板，还包括所述的微发光二极管阵列基板。与现有技术相比，通过在像素电极与微发光二极管之间覆盖一层导电层，使得微发光二极管处的热量能够经导电层传导至其他区域，从而提高散热能力。', '本发明提供了一种微发光二极管阵列基板，包括玻璃基板，所述玻璃基板上依次形成有栅极、绝缘层，在绝缘层上形成有半导体层以及像素电极，在半导体层上设有源极、漏极，所述漏极与相邻的像素电极连接，在像素电极上覆盖有一层第一导电层，第一导电层上连接有微发光二极管。本发明还提供了一种显示面板，包括CF基板，还包括所述的微发光二极管阵列基板。与现有技术相比，通过在像素电极与微发光二极管之间覆盖一层导电层，使得微发光二极管处的热量能够经导电层传导至其他区域，从而提高散热能力。', 'CN201710106242.2', 1488124800, 'CN106876552B', 1564070400, 1497888000, NULL, 1564070400, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 6, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 4, NULL, NULL, 5, 0, 0, 0, 0, NULL, '913', NULL, '黄丽娜', NULL, 'CN101937950A | CN102110759A | CN103002616A | CN205081118U | CN205944093U', NULL, NULL, 1, '\\20220510\\2750fddbc4f84f358dfcb2408f978f23.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 40496, 40498, 40497, 4);
INSERT INTO `os_patent` VALUES (23642, '透反射式液晶显示器', '透反射式液晶显示器', 'CN106896577A', '本发明提供一种透反射式液晶显示器，包括液晶显示面板和背光源；所述液晶显示面板划分成多个相互交错的透射区和反射区；所述背光源包括背光源基板、及设于所述背光源基板上的多个微发光二极管阵列；所述多个微发光二极管阵列对应分布于所述液晶显示面板的多个透射区下方的背光源基板上，所述背光源通过所述多个微发光二极管阵列向液晶显示面板的多个透射区提供背光，从而保证了背光源发出的光只会在透射区投影位置上传播和射出，而不会在反射区投影位置上传播和射出，避免了背光源发出的光射向反射区被白白浪费掉，提高了背光源的利用率和光效率，降低了透反射式液晶显示器的功耗，进而达到节能省电的目的，提高了显示设备的续航能力。', '本发明提供一种透反射式液晶显示器，包括液晶显示面板和背光源；所述液晶显示面板划分成多个相互交错的透射区和反射区；所述背光源包括背光源基板、及设于所述背光源基板上的多个微发光二极管阵列；所述多个微发光二极管阵列对应分布于所述液晶显示面板的多个透射区下方的背光源基板上，所述背光源通过所述多个微发光二极管阵列向液晶显示面板的多个透射区提供背光，从而保证了背光源发出的光只会在透射区投影位置上传播和射出，而不会在反射区投影位置上传播和射出，避免了背光源发出的光射向反射区被白白浪费掉，提高了背光源的利用率和光效率，降低了透反射式液晶显示器的功耗，进而达到节能省电的目的，提高了显示设备的续航能力。', 'CN201710188824.X', 1490544000, 'CN106896577A', 1498492800, 1498492800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 7, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 12, 9, 9, 9, 0, NULL, '909', NULL, NULL, NULL, 'CN102185043A | CN103018949A | CN104267520A | CN105259707A | CN105319773A | CN106094321A | CN106098697A | CN106228913A | CN106229326A | CN106405932A | CN204227219U | KR100657281B1', 'CN108061988A | CN108061988B | CN109507824A | CN109507824B | CN109801564A | CN110632789A | WO2020182185A1 | WO2020199251A1 | WO2021031399A1', NULL, 1, '\\20220510\\f508cfe7b9104ee086c0926e83afd85b.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40499, 40501, 40500, 3);
INSERT INTO `os_patent` VALUES (23643, '背光模组及液晶显示装置', '背光模组及液晶显示装置', 'CN106896579A', '本发明提供一种背光模组及液晶显示装置，该背光模组的导光板包括第一区域和第二区域，导光板在第二区域邻近第一区域的一侧设置有入光面，第一区域设置有衍射光栅，光源设置于衍射光栅的下方，衍射光栅用于对光源发出的光进行衍射，使得光以预定极角从入光面进入导光板的第二区域。基于此，本发明能够在实现区域亮度控制的同时有利于背光模组的轻薄化设计要求。', '本发明提供一种背光模组及液晶显示装置，该背光模组的导光板包括第一区域和第二区域，导光板在第二区域邻近第一区域的一侧设置有入光面，第一区域设置有衍射光栅，光源设置于衍射光栅的下方，衍射光栅用于对光源发出的光进行衍射，使得光以预定极角从入光面进入导光板的第二区域。基于此，本发明能够在实现区域亮度控制的同时有利于背光模组的轻薄化设计要求。', 'CN201710276898.9', 1493049600, 'CN106896579A', 1498492800, 1498492800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 3, NULL, NULL, 6, 8, 8, 8, 0, NULL, '910', NULL, NULL, NULL, 'CN101329472A | CN101555997A | CN104678477A | CN1441895A | CN201866647U | KR1020100105927A', 'CN108398830A | CN108398830B | CN108563069A | US10809435B2 | WO2019000987A1 | WO2019029349A1 | WO2019205477A1 | WO2020015540A1', NULL, 1, '\\20220510\\9635648097c840f498d5e1e1e5dd4155.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40502, 40504, 40503, 3);
INSERT INTO `os_patent` VALUES (23644, '转印模板及微发光二极管的转印装置', '转印模板及微发光二极管的转印装置', 'CN106903978B', '本发明提供了一种转印模板，包括转移衬底，所述转移衬底的一侧表面上均匀阵列有凸起，在凸起的表面上以及凸起之间的间隙内覆盖有随温度变化改变胶体黏度的温控胶。本发明还提供了一种微发光二极管的转印装置，包括机架，在机架上设有待转移平台以及与待转移平台相邻的转移平台，在机架上方设有可从待转移平台移动至转移平台并且可上下移动的转移机构，转移机构上设有所述的转印模板，所述凸起与待转移平台以及转移平台相对设置，在转移机构上设有为转印模板加热的加热装置，转印模板通过紧固件固定在加热装置的加热面上，在转移平台内设有冷却装置。与现有技术相比，实现通过温度调节进行微发光二极管的转印，不仅结构简单，而且转印效率高。', '本发明提供了一种转印模板，包括转移衬底，所述转移衬底的一侧表面上均匀阵列有凸起，在凸起的表面上以及凸起之间的间隙内覆盖有随温度变化改变胶体黏度的温控胶。本发明还提供了一种微发光二极管的转印装置，包括机架，在机架上设有待转移平台以及与待转移平台相邻的转移平台，在机架上方设有可从待转移平台移动至转移平台并且可上下移动的转移机构，转移机构上设有所述的转印模板，所述凸起与待转移平台以及转移平台相对设置，在转移机构上设有为转印模板加热的加热装置，转印模板通过紧固件固定在加热装置的加热面上，在转移平台内设有冷却装置。与现有技术相比，实现通过温度调节进行微发光二极管的转印，不仅结构简单，而且转印效率高。', 'CN201710094030.7', 1487606400, 'CN106903978B', 1547136000, 1498752000, NULL, 1547136000, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 5, NULL, NULL, 14, 1, 1, 1, 0, NULL, '913', NULL, '李斌', NULL, 'CN104067381A | CN104600016A | CN105129259A | CN105372864A | CN105609447A | CN105609455A | CN105632985A | CN106058010A | CN205920952U | JP1994151551A | JP1996159662A | JP2010205828A | JP2013084683A | KR100986248B1', 'TWI757648B', NULL, 1, '\\20220510\\bcb16e9d9c8343a7a4145ad3b5bb6617.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40505, 40507, 40506, 5);
INSERT INTO `os_patent` VALUES (23645, '微发光二极管阵列基板及显示面板', '微发光二极管阵列基板及显示面板', 'CN106935608B', '本发明提供了一种微发光二极管阵列基板，包括玻璃基板，所述玻璃基板上依次形成有栅极、绝缘层，在绝缘层上形成有半导体层以及像素电极，在半导体层上设有源极、漏极，所述漏极与相邻的像素电极连接，在像素电极上连接有微发光二极管，所述栅极、源极、漏极、像素电极以及与微发光二极管的管脚连接的引线均采用石墨烯导电材料制备得到。本发明还提供了一种显示面板，包括所述的微发光二极管阵列基板，在微发光二极管上分别设有色阻层。与现有技术相比，首先，通过在栅极、源极、漏极、像素电极以及与微发光二极管的管脚连接的引线均采用石墨烯导电材料制备得到，从而使得微发光二极管处的热量能够经被传导至其他区域，从而提高散热能力。', '本发明提供了一种微发光二极管阵列基板，包括玻璃基板，所述玻璃基板上依次形成有栅极、绝缘层，在绝缘层上形成有半导体层以及像素电极，在半导体层上设有源极、漏极，所述漏极与相邻的像素电极连接，在像素电极上连接有微发光二极管，所述栅极、源极、漏极、像素电极以及与微发光二极管的管脚连接的引线均采用石墨烯导电材料制备得到。本发明还提供了一种显示面板，包括所述的微发光二极管阵列基板，在微发光二极管上分别设有色阻层。与现有技术相比，首先，通过在栅极、源极、漏极、像素电极以及与微发光二极管的管脚连接的引线均采用石墨烯导电材料制备得到，从而使得微发光二极管处的热量能够经被传导至其他区域，从而提高散热能力。', 'CN201710106472.9', 1488124800, 'CN106935608B', 1571932800, 1499356800, NULL, 1571932800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 7, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 5, 5, NULL, NULL, 5, 0, 0, 0, 0, NULL, '913', NULL, '赵端', NULL, 'CN105914200A | CN106098697A | CN106356386A | TW201438218A | WO2016200882A1', NULL, NULL, 1, '\\20220510\\547c70de1f034749a74470f91ced15bb.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 40508, 40510, 40509, 5);
INSERT INTO `os_patent` VALUES (23646, '微发光二极管显示面板及其制作方法', '微发光二极管显示面板及其制作方法', 'CN106941108B', '本发明提供一种微发光二极管显示面板及其制作方法。该微发光二极管显示面板通过在像素凹槽内填充树脂粘合层，并将微发光二极管压入并固定到树脂粘合层中，同时通过连接电极将微发光二极管的底部的电极引导到微发光二极管的顶部，使得微发光二极管两个电极都处于顶部，方便所述微发光二极管的电极与电极触点的连接，能够降低微发光二极管的电极邦定难度，提升微发光二极管的电极邦定的可靠性。', '本发明提供一种微发光二极管显示面板及其制作方法。该微发光二极管显示面板通过在像素凹槽内填充树脂粘合层，并将微发光二极管压入并固定到树脂粘合层中，同时通过连接电极将微发光二极管的底部的电极引导到微发光二极管的顶部，使得微发光二极管两个电极都处于顶部，方便所述微发光二极管的电极与电极触点的连接，能够降低微发光二极管的电极邦定难度，提升微发光二极管的电极邦定的可靠性。', 'CN201710370731.9', 1495468800, 'CN106941108B', 1568649600, 1499702400, NULL, 1568649600, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 19, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 13, 13, NULL, NULL, 3, 0, 0, 0, 0, NULL, '909', NULL, '赵端', NULL, 'CN101859714A | CN105870265A | US20130130440A1', NULL, NULL, 1, '\\20220510\\cca9c5312a044f5794eed06f85b76ece.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40511, 40513, 40512, 13);
INSERT INTO `os_patent` VALUES (23647, '彩色微发光二极管阵列基板的制作方法', '彩色微发光二极管阵列基板的制作方法', 'CN107017319A', '本发明提供一种彩色微发光二极管阵列基板的制作方法，通过在接受基板上制作多个分别为不同颜色的单色微发光二极管阵列而形成彩色微发光二极管阵列，其中对于每一颜色的单色微发光二极管阵列的制作，结合绑定技术与激光脱落技术，选择性地在供给基板上特定区域的微发光二极管上形成金属电极，从而选择性地将该特定区域的微发光二极管绑定在接受基板上，并选择性的对该特定区域的微发光二极管进行激光照射，从而使该特定区域的微发光二极管经过绑定以及激光退火后与供给基板分离，在接受基板上形成单色微发光二极管阵列，进而实现了接受基板上不同颜色的单色微发光二极管阵列的制作，且制作方法简单易行。', '本发明提供一种彩色微发光二极管阵列基板的制作方法，通过在接受基板上制作多个分别为不同颜色的单色微发光二极管阵列而形成彩色微发光二极管阵列，其中对于每一颜色的单色微发光二极管阵列的制作，结合绑定技术与激光脱落技术，选择性地在供给基板上特定区域的微发光二极管上形成金属电极，从而选择性地将该特定区域的微发光二极管绑定在接受基板上，并选择性的对该特定区域的微发光二极管进行激光照射，从而使该特定区域的微发光二极管经过绑定以及激光退火后与供给基板分离，在接受基板上形成单色微发光二极管阵列，进而实现了接受基板上不同颜色的单色微发光二极管阵列的制作，且制作方法简单易行。', 'CN201710370194.8', 1495468800, 'CN107017319A', 1501776000, 1501776000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 3, NULL, NULL, 10, 37, 36, 37, 0, NULL, '909', NULL, NULL, NULL, 'CN101582385A | CN102637681A | CN102903804A | CN103700736A | CN104350613A | CN105493298A | JP2003174041A | JP2004266026A | US20120055532A1 | US6972204B2', 'CN107919414A | CN107978665A | CN107978665B | CN108538878A | CN109524512A | CN109585380A | CN109860092A | CN109860092B | CN110265348A | CN110265348B | CN110350063A | CN110350063B | CN110416243A | CN110416243B | CN110610931A | CN110998824A | CN111081830A | CN111128813A | CN111463332A | CN111463332B | CN111613699A | CN111613699B | CN111739987A | CN112968021A | EP3489998A1 | TWI686919B | US10622339B2 | US10916523B2 | US10978530B2 | US10989376B2 | US10998352B2 | US11107946B2 | WO2019109390A1 | WO2020012237A1 | WO2021097734A1 | WO2021217607A1 | WO2021243762A1', NULL, 1, '\\20220510\\9aefdfb0404b44df8a0f97038c8b6833.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40514, 40516, 40515, 3);
INSERT INTO `os_patent` VALUES (23648, 'Micro LED彩色显示器件', 'Micro LED彩色显示器件', 'CN107068707A', '本发明提供一种Micro LED彩色显示器件，在绿色子像素(P2)中采用短波长的第二蓝色LED(B2)激发绿色色彩转换层(G)发光来代替绿色LED，第二蓝色LED(B2)本身较为稳定，可通过控制绿色色彩转换层(G)涂布厚度的精度来控制绿颜色的色度，涂布厚度的精度控制比绿色LED的规格控制容易，能够使得色度均匀性较好，绿颜色的稳定性易于控制，显示质量提高。', '本发明提供一种Micro LED彩色显示器件，在绿色子像素(P2)中采用短波长的第二蓝色LED(B2)激发绿色色彩转换层(G)发光来代替绿色LED，第二蓝色LED(B2)本身较为稳定，可通过控制绿色色彩转换层(G)涂布厚度的精度来控制绿颜色的色度，涂布厚度的精度控制比绿色LED的规格控制容易，能够使得色度均匀性较好，绿颜色的稳定性易于控制，显示质量提高。', 'CN201710443800.4', 1497283200, 'CN107068707A', 1502985600, 1502985600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 4, NULL, NULL, 6, 17, 17, 17, 0, NULL, '909', NULL, NULL, NULL, 'CN105679196A | CN106098697A | CN106356386A | CN106684108A | US20160290600A1 | US20170062400A1', 'CN107946483A | CN107946483B | CN108493154A | CN108493154B | CN110176530A | CN110176530B | CN110571224A | CN110571224B | TWI690074B | TWI739931B | TWI754283B | US10665573B2 | US11107949B2 | US11139416B2 | WO2019205437A1 | WO2020042641A1 | WO2020042652A1', NULL, 1, '\\20220510\\5c6fd4de40214088b89f913abf4278fe.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40517, 40519, 40518, 4);
INSERT INTO `os_patent` VALUES (23649, '蓝光吸收截止膜及蓝光显示装置', '蓝光吸收截止膜及蓝光显示装置', 'CN107092048A', '本发明提供一种蓝光吸收截止膜及蓝光显示装置。本发明的蓝光吸收截止膜，由光刻胶材料形成，所述光刻胶材料包括树脂、黄色颜料、分散剂、及光引发剂，能够有效吸收蓝光显示装置中多余的蓝光而避免其整体显示效果偏蓝色，且制作方法简单。本发明的蓝光显示装置，包括上述的蓝光吸收截止膜，能够有效吸收蓝光显示装置中多余的蓝光而避免其整体显示效果偏蓝色。', '本发明提供一种蓝光吸收截止膜及蓝光显示装置。本发明的蓝光吸收截止膜，由光刻胶材料形成，所述光刻胶材料包括树脂、黄色颜料、分散剂、及光引发剂，能够有效吸收蓝光显示装置中多余的蓝光而避免其整体显示效果偏蓝色，且制作方法简单。本发明的蓝光显示装置，包括上述的蓝光吸收截止膜，能够有效吸收蓝光显示装置中多余的蓝光而避免其整体显示效果偏蓝色。', 'CN201710444275.8', 1497283200, 'CN107092048A', 1503590400, 1503590400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 4, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 3, NULL, NULL, 4, 7, 7, 7, 0, NULL, '909', NULL, NULL, NULL, 'CN103226260A | CN103278876A | CN105278153A | US20050146258A1', 'CN107975763A | CN108181759A | CN110082955A | CN111128035A | WO2019185047A1 | WO2020107657A1 | WO2021120270A1', NULL, 1, '\\20220510\\47eb806fb5bd431f9a614c4e1cdfecd0.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40520, 40522, 40521, 3);
INSERT INTO `os_patent` VALUES (23650, '微发光二极管的转移设备及转移方法', '微发光二极管的转移设备及转移方法', 'CN107146769B', '本发明提供一种微发光二极管的转移设备及转移方法。所述微发光二极管的转移设备包括：本体、设于所述本体上的吐液模块、冷却模块和加热模块，可通过吐液模块向待转移的微发光二极管吐出金属粘附液，通过冷却模块冷却待转移的微发光二极管上的金属粘附液，使得金属粘附液固化，将本体和待转移的微发光二极管粘结到一起进行微发光二极管的转移，转移到位后通过加热模块加热固化后的金属粘附液，使得金属粘附液熔化，分离本体和待转移的微发光二极管，能够降低微发光二极管的转移难度，提升微发光二极管的转移效率。', '本发明提供一种微发光二极管的转移设备及转移方法。所述微发光二极管的转移设备包括：本体、设于所述本体上的吐液模块、冷却模块和加热模块，可通过吐液模块向待转移的微发光二极管吐出金属粘附液，通过冷却模块冷却待转移的微发光二极管上的金属粘附液，使得金属粘附液固化，将本体和待转移的微发光二极管粘结到一起进行微发光二极管的转移，转移到位后通过加热模块加热固化后的金属粘附液，使得金属粘附液熔化，分离本体和待转移的微发光二极管，能够降低微发光二极管的转移难度，提升微发光二极管的转移效率。', 'CN201710369880.3', 1495468800, 'CN107146769B', 1571932800, 1504800000, NULL, 1571932800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 14, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 5, 5, NULL, NULL, 4, 0, 0, 0, 0, NULL, '909', NULL, '王磊', NULL, 'CN106299079A | JP2001318604A | US20140033528A1 | WO2016207640A1', NULL, NULL, 1, '\\20220510\\02058eda4f094a05a7a8af2059ec1974.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40523, 40525, 40524, 5);
INSERT INTO `os_patent` VALUES (23651, '微转印方法', '微转印方法', 'CN107154374B', '本发明提供一种微转印方法，利用传送头的拾取凸起吸附载体基板上的微部件后，将传送头与载体基板上下翻转，使所述传送头位于载体基板的下方；然后将传送头与载体基板分离，使传送头承载着被拾取凸起吸附的微部件；然后将承载有微部件的传送头转移到接受基板的上方，再将传送头上下翻转，将拾取凸起吸附的微部件置于接受基板上；本发明的微转印方法，在传送头转移微部件的过程中，微部件承载于传送头上，相对于现有技术，传送头对微部件的吸附不再需要克服重力的影响，继而在保证传送头对微部件稳定转移的情况下，可以对传送头进行快速移动，有效提高了传送头的转移良率和速率。', '本发明提供一种微转印方法，利用传送头的拾取凸起吸附载体基板上的微部件后，将传送头与载体基板上下翻转，使所述传送头位于载体基板的下方；然后将传送头与载体基板分离，使传送头承载着被拾取凸起吸附的微部件；然后将承载有微部件的传送头转移到接受基板的上方，再将传送头上下翻转，将拾取凸起吸附的微部件置于接受基板上；本发明的微转印方法，在传送头转移微部件的过程中，微部件承载于传送头上，相对于现有技术，传送头对微部件的吸附不再需要克服重力的影响，继而在保证传送头对微部件稳定转移的情况下，可以对传送头进行快速移动，有效提高了传送头的转移良率和速率。', 'CN201710370030.5', 1495468800, 'CN107154374B', 1568044800, 1505145600, NULL, 1568044800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 5, 5, NULL, NULL, 6, 1, 1, 1, 0, NULL, '909', NULL, '田丽娟', NULL, 'CN101488469A | CN101867005A | DE102009010570A1 | JP2005251978A | KR100541998B1 | US5718552A', 'TWI757648B', NULL, 1, '\\20220510\\6d3bc1450fae42a4b59980998af02613.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40526, 40528, 40527, 5);
INSERT INTO `os_patent` VALUES (23652, '微发光二极管阵列基板的封装结构及其封装方法', '微发光二极管阵列基板的封装结构及其封装方法', 'CN107170771B', '本发明提供一种微发光二极管阵列基板的封装结构及其封装方法。本发明的微发光二极管阵列基板的封装结构，包括基板、微发光二极管阵列、及光阻保护层；所述微发光二极管阵列包括数个阵列排布的微发光二极管；所述光阻保护层对应所述数个微发光二极管的位置设有数个阵列排布的过孔，所述数个微发光二极管分别位于所述数个过孔当中；每一过孔内均填充有一个上表面呈凸起状的并覆盖相应过孔内微发光二极管的UV树脂微透镜；能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果。', '本发明提供一种微发光二极管阵列基板的封装结构及其封装方法。本发明的微发光二极管阵列基板的封装结构，包括基板、微发光二极管阵列、及光阻保护层；所述微发光二极管阵列包括数个阵列排布的微发光二极管；所述光阻保护层对应所述数个微发光二极管的位置设有数个阵列排布的过孔，所述数个微发光二极管分别位于所述数个过孔当中；每一过孔内均填充有一个上表面呈凸起状的并覆盖相应过孔内微发光二极管的UV树脂微透镜；能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果。', 'CN201710370047.0', 1495468800, 'CN107170771B', 1577116800, 1505404800, NULL, 1577116800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 5, 5, NULL, NULL, 6, 0, 0, 0, 0, NULL, '909', NULL, '刘乐', NULL, 'CN101764090A | CN102705790A | CN103035825A | CN105981169A | CN105990492A | CN1780006A', NULL, NULL, 1, '\\20220510\\9494dfeda92641d09375720e879e8f58.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 40529, 40531, 40530, 5);
INSERT INTO `os_patent` VALUES (23653, '微发光二极管阵列基板的封装结构', '微发光二极管阵列基板的封装结构', 'CN107170772A', '本发明提供一种微发光二极管阵列基板的封装结构，包括基板、设于所述基板上的微发光二极管阵列、设于所述基板上方并覆盖所述微发光二极管阵列的保护层；所述微发光二极管阵列包括数个阵列排布的微发光二极管；所述基板的上表面上、或所述保护层的下表面上设有数个凹槽，所述数个微发光二极管容置于所述数个凹槽中；能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果。', '本发明提供一种微发光二极管阵列基板的封装结构，包括基板、设于所述基板上的微发光二极管阵列、设于所述基板上方并覆盖所述微发光二极管阵列的保护层；所述微发光二极管阵列包括数个阵列排布的微发光二极管；所述基板的上表面上、或所述保护层的下表面上设有数个凹槽，所述数个微发光二极管容置于所述数个凹槽中；能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果。', 'CN201710370182.5', 1495468800, 'CN107170772A', 1505404800, 1505404800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 5, 7, 6, 7, 0, NULL, '909', NULL, NULL, NULL, 'CN101246880A | CN102709479A | CN104505465A | CN1589074A | US20120049235A1', 'CN108565348A | CN108919572A | CN108919572B | TWI712844B | US10527886B1 | WO2020107811A1 | WO2021104494A1', NULL, 1, '\\20220510\\b0a6eb748ea742659a9129cc2120fd25.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40532, 40534, 40533, 3);
INSERT INTO `os_patent` VALUES (23654, '微发光二极管显示面板及其制作方法', '微发光二极管显示面板及其制作方法', 'CN107170773B', '本发明提供一种微发光二极管显示面板及其制作方法。该微发光二极管显示面板的衬底基板上设有间隔排列的第一电极触点和第二电极触点，所述第一电极触点和第二电极触点分别与微发光二极管的底电极和连接电极接触，所述连接电极还与微发光二极管的顶电极接触，能够在微发光二极管转印后直接进行微发光二极管的检测，降低产品检测及修复的难度，提升产品良率。', '本发明提供一种微发光二极管显示面板及其制作方法。该微发光二极管显示面板的衬底基板上设有间隔排列的第一电极触点和第二电极触点，所述第一电极触点和第二电极触点分别与微发光二极管的底电极和连接电极接触，所述连接电极还与微发光二极管的顶电极接触，能够在微发光二极管转印后直接进行微发光二极管的检测，降低产品检测及修复的难度，提升产品良率。', 'CN201710370730.4', 1495468800, 'CN107170773B', 1568649600, 1505404800, NULL, 1568649600, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 19, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 13, 13, NULL, NULL, 4, 0, 0, 0, 0, NULL, '909', NULL, '赵端', NULL, 'CN104350613A | CN106229326A | CN106373895A | CN106601657A', NULL, NULL, 1, '\\20220510\\b1e653508cab4a45a1b1a1ca02b78000.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40535, 40537, 40536, 13);
INSERT INTO `os_patent` VALUES (23655, '显示面板及其制作方法、显示设备', '显示面板及其制作方法、显示设备', 'CN107331670A', '本发明提供一种显示面板及其制作方法，包括微型发光二极管及与所述微型发光二极管电连接的薄膜晶体管。所述微型发光二极管包括N型半导体及P型半导体。所述P型半导体靠近所述薄膜晶体管，所述N型半导体设于P型半导体背向薄膜晶体管的一侧。通过等离子体表面处理工艺将所述N型半导体背向所述P型半导体的一面进行粗化。由于所述N型半导体的厚度大于所述P型半导体的厚度，因此，对所述N型半导体进行粗化时，不会影响所述N型半导体材料的晶体质量，进而实现了增加出光效率的同时，减少所述微型发光二极管的漏电流。', '本发明提供一种显示面板及其制作方法，包括微型发光二极管及与所述微型发光二极管电连接的薄膜晶体管。所述微型发光二极管包括N型半导体及P型半导体。所述P型半导体靠近所述薄膜晶体管，所述N型半导体设于P型半导体背向薄膜晶体管的一侧。通过等离子体表面处理工艺将所述N型半导体背向所述P型半导体的一面进行粗化。由于所述N型半导体的厚度大于所述P型半导体的厚度，因此，对所述N型半导体进行粗化时，不会影响所述N型半导体材料的晶体质量，进而实现了增加出光效率的同时，减少所述微型发光二极管的漏电流。', 'CN201710556199.X', 1499616000, 'CN107331670A', 1509984000, 1509984000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 16, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 2, 17, 15, 16, 0, NULL, '914', NULL, NULL, NULL, 'CN102130244A | CN105324858A', 'CN108011012A | CN108183117A | CN108183156A | CN109301051A | CN109301051B | CN109473446A | CN109473446B | CN111613735A | US10497685B2 | US10971480B2 | US20190198488A1 | WO2019010946A1 | WO2019127701A1 | WO2019127704A1 | WO2020133715A1 | WO2021244369A1', NULL, 1, '\\20220510\\31a0956a258e4b9199a959042d809a57.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40538, 40540, 40539, 4);
INSERT INTO `os_patent` VALUES (23656, '直下式背光模组以及液晶显示器', '直下式背光模组以及液晶显示器', 'CN107390428A', '本发明公开了一种直下式背光模组，包括背板以及设置在所述背板上的光源，其中，所述光源包括印刷电路板以及电性连接在所述印刷电路板上的多个micro‑LED芯片，所述多个micro‑LED芯片在所述印刷电路板上呈矩阵阵列排布，任意相邻的两个micro‑LED芯片之间设置有遮光单元；所述印刷电路板上还连接有背光驱动芯片，所述背光驱动芯片独立地驱动每一个所述micro‑LED芯片。本发明还公开了一种液晶显示器，其包括如上所述的直下式背光模组。', '本发明公开了一种直下式背光模组，包括背板以及设置在所述背板上的光源，其中，所述光源包括印刷电路板以及电性连接在所述印刷电路板上的多个micro‑LED芯片，所述多个micro‑LED芯片在所述印刷电路板上呈矩阵阵列排布，任意相邻的两个micro‑LED芯片之间设置有遮光单元；所述印刷电路板上还连接有背光驱动芯片，所述背光驱动芯片独立地驱动每一个所述micro‑LED芯片。本发明还公开了一种液晶显示器，其包括如上所述的直下式背光模组。', 'CN201710607960.8', 1500825600, 'CN107390428A', 1511452800, 1511452800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 4, NULL, NULL, 6, 26, 25, 26, 0, NULL, '913', NULL, NULL, NULL, 'CN101126485A | CN101546063A | CN103076649A | CN103486460A | CN106574749A | US20140368769A1', 'CN108303824A | CN108470548B | CN109031830A | CN109283744A | CN109283744B | CN109471298A | CN110136595A | CN110286518A | CN110390886A | CN110391261A | CN110391261B | CN110420776A | CN111354299A | CN111354299B | CN111443524A | CN111489705A | CN111540273A | CN112198711A | CN112198711B | CN112213885A | CN113671752A | EP3790062A4 | US11088172B2 | WO2019205616A1 | WO2021237824A1 | WO2022077547A1', NULL, 1, '\\20220510\\d9305fc12d7c4bcf9958c5ccdf6ee10c.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40541, 40543, 40542, 4);
INSERT INTO `os_patent` VALUES (23657, '一种微型LED显示面板', '一种微型LED显示面板', 'CN107424524B', '本发明公开了一种微型LED显示面板，包括：微型LED阵列模块层，包括多个间隔设置的微型LED灯，微型LED灯在通电的情况下发出第一光线；光转换层，设置在微型LED阵列模块层的上端，包括依次循环设置的红光量子点发光介质、绿光量子点发光介质以及蓝光量子点发光介质，且分别间隔对应设置在每个微型LED灯的上端；光转换层用于吸收第一光线，并在第一光线的激发下激发出红绿蓝三色的第二光线。通过上述方式，本发明能够提高光能利用率，呈现较佳的色彩效果。', '本发明公开了一种微型LED显示面板，包括：微型LED阵列模块层，包括多个间隔设置的微型LED灯，微型LED灯在通电的情况下发出第一光线；光转换层，设置在微型LED阵列模块层的上端，包括依次循环设置的红光量子点发光介质、绿光量子点发光介质以及蓝光量子点发光介质，且分别间隔对应设置在每个微型LED灯的上端；光转换层用于吸收第一光线，并在第一光线的激发下激发出红绿蓝三色的第二光线。通过上述方式，本发明能够提高光能利用率，呈现较佳的色彩效果。', 'CN201710612917.0', 1500912000, 'CN107424524B', 1601568000, 1512057600, NULL, 1601568000, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 5, 0, 0, 0, 0, NULL, '910', NULL, '高辉辉', NULL, 'CN104064658A | CN105339996A | CN105932028A | CN106597753A | US20140036538A1', NULL, NULL, 1, '\\20220510\\04780c95813c427882c44c60425c7a02.png', NULL, NULL, 1, NULL, NULL, 1, NULL, NULL, NULL, 40544, 40546, 40545, 2);
INSERT INTO `os_patent` VALUES (23658, '制作彩色Micro‑LED的方法、显示模组及终端', '制作彩色Micro‑LED的方法、显示模组及终端', 'CN107437531A', '本发明公开了一种制作彩色Micro‑LED的方法，该方法包括：提供具有多个蓝光Micro‑LED的基板；使蓝光Micro‑LED先后与第一、第二颜色光敏溶液接触；并先后点亮第一、第二预设蓝光Micro‑LED，使第一、第二预设蓝光Micro‑LED上反应聚成透镜。在形成透镜之后，第一预设蓝光Micro‑LED发第一颜色的光，第二预设蓝光Micro‑LED发第二颜色的光。再与剩下的发蓝光的部分蓝光Micro‑LED构成三种颜色，进而实现Micro‑LED发彩色的效果。本发明还提供一种包括上述Micro‑LED阵列的显示模组，以及一种包括上述显示模组的终端。', '本发明公开了一种制作彩色Micro‑LED的方法，该方法包括：提供具有多个蓝光Micro‑LED的基板；使蓝光Micro‑LED先后与第一、第二颜色光敏溶液接触；并先后点亮第一、第二预设蓝光Micro‑LED，使第一、第二预设蓝光Micro‑LED上反应聚成透镜。在形成透镜之后，第一预设蓝光Micro‑LED发第一颜色的光，第二预设蓝光Micro‑LED发第二颜色的光。再与剩下的发蓝光的部分蓝光Micro‑LED构成三种颜色，进而实现Micro‑LED发彩色的效果。本发明还提供一种包括上述Micro‑LED阵列的显示模组，以及一种包括上述显示模组的终端。', 'CN201710612919.X', 1500912000, 'CN107437531A', 1512403200, 1512403200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 4, NULL, NULL, 5, 5, 5, 5, 0, NULL, '910', NULL, NULL, NULL, 'CN101572287A | CN102203965A | CN106356386A | CN205810814U | US20120161170A1', 'CN108511390A | CN108511390B | CN109243304A | CN109243304B | CN112820803A', NULL, 1, '\\20220510\\4fa5fe0938ac461ea5d34e7b982b492d.png', NULL, NULL, 1, NULL, NULL, 18, NULL, NULL, NULL, 40547, 40549, 40548, 4);
INSERT INTO `os_patent` VALUES (23659, '柔性显示装置的制作方法', '柔性显示装置的制作方法', 'CN107507927B', '本发明提供一种柔性显示装置的制作方法。该方法通过在透明刚性衬底的至少一侧上设置透明的光散射层，得到透明刚性基板，接着在透明刚性基板的一侧制作柔性基板，并在柔性基板上依次形成驱动电路层及显示介质层，之后，利用激光剥离制程对透明刚性基板与柔性基板的界面进行激光照射，将透明刚性基板与柔性基板分离得到柔性显示装置，由于光散射层的存在，能够对射入的激光进行散射而使透明刚性基板与柔性基板的界面接收的激光能量均匀，实现柔性基板和透明刚性基板之间的有效分离，提升产品良率，降低激光剥离制程对激光源能量波动的依赖性。', '本发明提供一种柔性显示装置的制作方法。该方法通过在透明刚性衬底的至少一侧上设置透明的光散射层，得到透明刚性基板，接着在透明刚性基板的一侧制作柔性基板，并在柔性基板上依次形成驱动电路层及显示介质层，之后，利用激光剥离制程对透明刚性基板与柔性基板的界面进行激光照射，将透明刚性基板与柔性基板分离得到柔性显示装置，由于光散射层的存在，能够对射入的激光进行散射而使透明刚性基板与柔性基板的界面接收的激光能量均匀，实现柔性基板和透明刚性基板之间的有效分离，提升产品良率，降低激光剥离制程对激光源能量波动的依赖性。', 'CN201710563162.X', 1499702400, 'CN107507927B', 1556553600, 1513872000, NULL, 1556553600, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 19, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 6, 0, 0, 0, 0, NULL, '909', NULL, '崔文凯', NULL, 'CN104465479A | CN105158831A | CN105226186A | CN105355591A | CN106784311A | US9685640B2', NULL, NULL, 1, '\\20220510\\e961609ab3d04e40a4a585a1fa61afbf.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, NULL, 40550, 40552, 40551, 2);
INSERT INTO `os_patent` VALUES (23660, '转移装置及微型发光二极管的转移方法', '转移装置及微型发光二极管的转移方法', 'CN107527973B', '本发明提供一种转移装置及微型发光二极管的转移方法。在所述微型发光二极管的转移过程时，通过控制磁流变液的状态实现所述微型发光二极管与转移头之间进行物理连接，从而增加所述微型发光二极管与所述转移头之间的作用力，进而防止所述微型发光二极管转移过程中的损坏，从而降低所述微型发光二极管的转移难度。并且，通过简单的电磁装置控制所述微型发光二极管与所述转移头的连接与分离，简化所述微型发光二极管的转移操作，提高所述微型发光二极管的转移效率。', '本发明提供一种转移装置及微型发光二极管的转移方法。在所述微型发光二极管的转移过程时，通过控制磁流变液的状态实现所述微型发光二极管与转移头之间进行物理连接，从而增加所述微型发光二极管与所述转移头之间的作用力，进而防止所述微型发光二极管转移过程中的损坏，从而降低所述微型发光二极管的转移难度。并且，通过简单的电磁装置控制所述微型发光二极管与所述转移头的连接与分离，简化所述微型发光二极管的转移操作，提高所述微型发光二极管的转移效率。', 'CN201710704461.0', 1502812800, 'CN107527973B', 1558972800, 1514476800, NULL, 1558972800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 5, 5, NULL, NULL, 2, 0, 0, 0, 0, NULL, '914', NULL, '颜庙青', NULL, 'CN1668418A | US20170140961A1', NULL, NULL, 1, '\\20220510\\2877280d6ab64f90a33214cef761e7dd.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40553, 40555, 40554, 5);
INSERT INTO `os_patent` VALUES (23661, '柔性显示面板及制作方法', '柔性显示面板及制作方法', 'CN107731885A', '本发明提供了一种柔性显示面板的制作方法，包括：在玻璃基底的第一表面均匀地涂覆光刻胶，以形成剥离层；在剥离层表面以及位于剥离层两侧的玻璃基底的第一表面涂覆高分子材料，以形成覆盖剥离层的柔性基板；在柔性基板上依次形成器件层及封装层；沿着剥离层相对两侧侧面所在的平面切割依次层叠设置的玻璃基底、柔性基板、器件层以及封装层以形成柔性显示面板基体；对玻璃基底的与第一表面相对的第二表面进行曝光，以使剥离层发生分解；将粘结有玻璃基底的柔性显示面板置于显影液中，以使柔性基板因剥离层发生溶解与玻璃基底分离。本发明实现了不会损伤柔性基板，提高了柔性显示面板生产良率的技术效果。', '本发明提供了一种柔性显示面板的制作方法，包括：在玻璃基底的第一表面均匀地涂覆光刻胶，以形成剥离层；在剥离层表面以及位于剥离层两侧的玻璃基底的第一表面涂覆高分子材料，以形成覆盖剥离层的柔性基板；在柔性基板上依次形成器件层及封装层；沿着剥离层相对两侧侧面所在的平面切割依次层叠设置的玻璃基底、柔性基板、器件层以及封装层以形成柔性显示面板基体；对玻璃基底的与第一表面相对的第二表面进行曝光，以使剥离层发生分解；将粘结有玻璃基底的柔性显示面板置于显影液中，以使柔性基板因剥离层发生溶解与玻璃基底分离。本发明实现了不会损伤柔性基板，提高了柔性显示面板生产良率的技术效果。', 'CN201711156838.X', 1511107200, 'CN107731885A', 1519315200, 1519315200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 5, 7, 7, 7, 0, NULL, '914', NULL, NULL, NULL, 'CN102738078A | CN103456900A | CN104512075A | CN105552089A | US20030032210A1', 'CN109238652A | CN109238652B | CN109860437A | CN109860437B | CN110556330A | CN110556330B | WO2020155943A1', NULL, 1, '\\20220510\\94b6ac6124be4f6bae761bedd336e808.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40556, 40558, 40557, 1);
INSERT INTO `os_patent` VALUES (23662, '显示基板及其制作方法', '显示基板及其制作方法', 'CN107768409B', '本发明公开一种显示面板及其制作方法。显示面板显示区设置有多个呈矩阵排列的像素单元，其中，每个像素单元包括多个不同颜色的子像素单元，显示装置在对应显示区中包括至少一个设置于相邻两行像素单元之间的驱动电路，所述驱动电路包括多个子驱动电路，每个子像素通过一条信号导线与所述子驱动电路连接，所述子驱动电路所述通过所述信号导线传输图像驱动信号至所述子像素单元，用于驱动所述子像素单元进行图像显示。', '本发明公开一种显示面板及其制作方法。显示面板显示区设置有多个呈矩阵排列的像素单元，其中，每个像素单元包括多个不同颜色的子像素单元，显示装置在对应显示区中包括至少一个设置于相邻两行像素单元之间的驱动电路，所述驱动电路包括多个子驱动电路，每个子像素通过一条信号导线与所述子驱动电路连接，所述子驱动电路所述通过所述信号导线传输图像驱动信号至所述子像素单元，用于驱动所述子像素单元进行图像显示。', 'CN201710998694.6', 1508428800, 'CN107768409B', 1622131200, 1520265600, NULL, 1622131200, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 11, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 5, 5, NULL, NULL, 3, 0, 0, 0, 0, NULL, '914', NULL, '徐晓雷', NULL, 'CN103348402A | CN103778886A | CN105489162A', NULL, NULL, 1, '\\20220510\\4cd909efaaea4133a43bcbadb2620bc0.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40559, 40561, 40560, 5);
INSERT INTO `os_patent` VALUES (23663, '背光检测电路及相关产品', '背光检测电路及相关产品', 'CN107784968A', '本发明公开一种背光检测电路，所述电路包括：N个分区电路，其中，任意分区电路包括M组mini‑LED电路，所述mini‑LED电路包括L个mini‑LED和开关电路，所述L个mini‑LED串联或并联连接形成串联mini‑LED组或并联mini‑LED组，所述开关电路根据控制信号CS控制一组mini‑LED的导通，其中，所述N、M和L均为正整数；在背光检测时，所述任意分区内至多只有一组mini‑LED电路导通。采用本发明的实施例可以只对异常的mini‑LED电路组进行重工处理，节约制作成本。', '本发明公开一种背光检测电路，所述电路包括：N个分区电路，其中，任意分区电路包括M组mini‑LED电路，所述mini‑LED电路包括L个mini‑LED和开关电路，所述L个mini‑LED串联或并联连接形成串联mini‑LED组或并联mini‑LED组，所述开关电路根据控制信号CS控制一组mini‑LED的导通，其中，所述N、M和L均为正整数；在背光检测时，所述任意分区内至多只有一组mini‑LED电路导通。采用本发明的实施例可以只对异常的mini‑LED电路组进行重工处理，节约制作成本。', 'CN201711078595.2', 1509897600, 'CN107784968A', 1520524800, 1520524800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 17, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 4, NULL, NULL, 9, 10, 10, 10, 0, NULL, '914', NULL, NULL, NULL, 'CN101990715A | CN103247269A | CN103280203A | CN106205504A | CN106847145A | US20040108821A1 | US20080106505A1 | US20130169190A1 | US20160381748A1', 'CN108646463A | CN108646463B | CN109346016A | CN110010083A | CN110784961A | CN110784961B | CN111445867A | CN111445867B | US10859240B2 | WO2019184036A1', NULL, 1, '\\20220510\\eb53be9bfd6840a5b0671d3c8bdd258d.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40562, 40564, 40563, 4);
INSERT INTO `os_patent` VALUES (23664, '微型LED显示面板及微型LED显示器', '微型LED显示面板及微型LED显示器', 'CN107871752B', '本发明提供了一种微型LED显示面板及微型LED显示器。微型LED显示面板包括：第一基板；第二基板，其朝向第一基板的一面上设置有阴极驱动电路；N根行信号线，其设置于第一基板上；绝缘层，其设置于第一基板以及行信号控制线上；M根列信号线，其设置于绝缘层上；M根补偿信号线，其设置于绝缘层上；多个LED发光组件，该多个LED发光组件呈M行N列阵列的排布于第一基板上，其中，同一行的LED发光组件与同一行信号线电连接，同一列的LED发光组件与同一补偿信号线以及同一列信号线连接，每一LED发光组件的远离第一基板的一端与第二基板相连且与阴极驱动电路电连接。', '本发明提供了一种微型LED显示面板及微型LED显示器。微型LED显示面板包括：第一基板；第二基板，其朝向第一基板的一面上设置有阴极驱动电路；N根行信号线，其设置于第一基板上；绝缘层，其设置于第一基板以及行信号控制线上；M根列信号线，其设置于绝缘层上；M根补偿信号线，其设置于绝缘层上；多个LED发光组件，该多个LED发光组件呈M行N列阵列的排布于第一基板上，其中，同一行的LED发光组件与同一行信号线电连接，同一列的LED发光组件与同一补偿信号线以及同一列信号线连接，每一LED发光组件的远离第一基板的一端与第二基板相连且与阴极驱动电路电连接。', 'CN201710961523.6', 1508169600, 'CN107871752B', 1573747200, 1522684800, NULL, 1573747200, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 9, 11, NULL, NULL, 5, 0, 0, 0, 0, NULL, '911', NULL, '李国斌', NULL, 'CN104681568A | CN106652809A | CN106652820A | US20160087108A1 | US20170125392A1', NULL, NULL, 1, '\\20220510\\d89b78e3a196445a8e8fe7692978203e.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40565, 40567, 40566, 11);
INSERT INTO `os_patent` VALUES (23665, '微型发光二极管显示装置及其制作方法', '微型发光二极管显示装置及其制作方法', 'CN107993583B', '本发明公开了一种微型发光二极管显示装置，包括基板、阵列设置在基板上表面且用于发出蓝光的微型发光二极管、设于微型发光二极管出光侧的黄色荧光粉层以及设于黄色荧光粉层出光侧的彩色滤光层，彩色滤光层包括红色滤光区域、绿色滤光区域以及透光区域，黄色荧光粉层表面间隔地开设有透光孔，透光孔与透光区域正对。本发明还公开了一种微型发光二极管显示装置的制作方法。本发明的微型发光二极管均发出蓝光，通过将其一次性地转印在基板上，然后利用该微型发光二极管激发黄色荧光粉层，再与出光方向上的彩色滤光层配合，即可实现彩色显示的目的，减少了发光二极管转移次数，工艺制程更加简化，降低了Micro LED的转移技术难度。', '本发明公开了一种微型发光二极管显示装置，包括基板、阵列设置在基板上表面且用于发出蓝光的微型发光二极管、设于微型发光二极管出光侧的黄色荧光粉层以及设于黄色荧光粉层出光侧的彩色滤光层，彩色滤光层包括红色滤光区域、绿色滤光区域以及透光区域，黄色荧光粉层表面间隔地开设有透光孔，透光孔与透光区域正对。本发明还公开了一种微型发光二极管显示装置的制作方法。本发明的微型发光二极管均发出蓝光，通过将其一次性地转印在基板上，然后利用该微型发光二极管激发黄色荧光粉层，再与出光方向上的彩色滤光层配合，即可实现彩色显示的目的，减少了发光二极管转移次数，工艺制程更加简化，降低了Micro LED的转移技术难度。', 'CN201711206341.4', 1511712000, 'CN107993583B', 1568649600, 1525363200, NULL, 1568649600, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 8, 4, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 5, 5, NULL, NULL, 5, 0, 0, 0, 0, NULL, '913', NULL, '谢绍俊', NULL, 'CN103257477A | CN103592815A | CN103779375A | US20140168575A1 | US8928021B1', NULL, NULL, 1, '\\20220510\\8a6edc55ab5943ba8c1f9f921785793b.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 40568, 40570, 40569, 5);
INSERT INTO `os_patent` VALUES (23666, '基于分区背光的低延迟液晶显示装置及其驱动方法', '基于分区背光的低延迟液晶显示装置及其驱动方法', 'CN108022563B', '本发明公开了一种基于分区背光的低延迟液晶显示装置及其驱动方法，所述液晶显示装置包括若干阵列分布的分区背光，所述驱动方法包括：S1、对显示屏主动阵列行列扫描，获取当前像素的图像灰阶，得到图像灰阶矩阵；S2、将图像灰阶矩阵根据显示装置的电光曲线进行归一化处理，得到显示驱动矩阵；S3、根据分区背光将显示驱动矩阵划分为一一对应的显示分区，并获取当前像素所处的显示分区的位置；S4、根据当前像素所处的显示分区的位置及显示驱动矩阵进行各显示分区的灰阶分布统计，根据各显示分区灰阶分布统计计算各显示分区点亮时的背光系数，并根据当前像素在显示分区中所处的位置及当前显示分区在显示驱动矩阵中所处的位置确定所需点亮的显示分区。', '本发明公开了一种基于分区背光的低延迟液晶显示装置及其驱动方法，所述液晶显示装置包括若干阵列分布的分区背光，所述驱动方法包括：S1、对显示屏主动阵列行列扫描，获取当前像素的图像灰阶，得到图像灰阶矩阵；S2、将图像灰阶矩阵根据显示装置的电光曲线进行归一化处理，得到显示驱动矩阵；S3、根据分区背光将显示驱动矩阵划分为一一对应的显示分区，并获取当前像素所处的显示分区的位置；S4、根据当前像素所处的显示分区的位置及显示驱动矩阵进行各显示分区的灰阶分布统计，根据各显示分区灰阶分布统计计算各显示分区点亮时的背光系数，并根据当前像素在显示分区中所处的位置及当前显示分区在显示驱动矩阵中所处的位置确定所需点亮的显示分区。', 'CN201810094701.4', 1517328000, 'CN108022563B', 1598544000, 1525968000, NULL, 1598544000, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 11, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 5, 0, 0, 0, 1, NULL, '913', NULL, '周栋梁', NULL, 'CN103778898A | CN106205497A | CN106228936A | US20060214904A1 | US20150097875A1', NULL, '高上等.带有反馈调节的直下式LED背光源驱动设计.《现代显示》.2010,(第Z1期),22-27.', 1, '\\20220510\\3299425922d94cc99171f9787c54e46a.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 40571, 40573, 40572, 2);
INSERT INTO `os_patent` VALUES (23667, '柔性液晶显示器及其背光源', '柔性液晶显示器及其背光源', 'CN108037613A', '本发明提供一种柔性液晶显示器及其背光源，背光源包括多个发光二极管，每一个发光二极管包括基板、透明外罩及发光二极管芯片，发光二极管芯片设置于基板上，透明外罩用于对发光二极管芯片进行封装，发光二极管芯片包括衬底、依次叠层设于衬底上的第一电极、P型半导体层、N型半导体层、第二电极，P型半导体层包括基质及填充于基质中的半导体结构阵列，半导体结构阵列包括阵列排布的多个半导体结构。通过半导体结构阵列可以在弯曲过程中提升发光二极管芯片的发光均匀性，同时，通过在基质中填充半导体结构阵列，减少了在弯曲过程中半导体结构阵列受到的应力，从而避免半导体层发生断裂。', '本发明提供一种柔性液晶显示器及其背光源，背光源包括多个发光二极管，每一个发光二极管包括基板、透明外罩及发光二极管芯片，发光二极管芯片设置于基板上，透明外罩用于对发光二极管芯片进行封装，发光二极管芯片包括衬底、依次叠层设于衬底上的第一电极、P型半导体层、N型半导体层、第二电极，P型半导体层包括基质及填充于基质中的半导体结构阵列，半导体结构阵列包括阵列排布的多个半导体结构。通过半导体结构阵列可以在弯曲过程中提升发光二极管芯片的发光均匀性，同时，通过在基质中填充半导体结构阵列，减少了在弯曲过程中半导体结构阵列受到的应力，从而避免半导体层发生断裂。', 'CN201711368855.X', 1513526400, 'CN108037613A', 1526313600, 1526313600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 7, 4, 2, 2, 0, NULL, '913', NULL, NULL, NULL, 'CN101858570A | CN103515496A | CN104765188A | CN1813357A | KR1020080061489A | US20110299074A1 | US20130134385A1', 'CN108281518A | CN108281518B | CN109003573A | CN109003573B', NULL, 1, '\\20220510\\bdc9f1f70586412080c8ca576a03ea3e.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40574, 40576, 40575, 1);
INSERT INTO `os_patent` VALUES (23668, '液晶显示器', '液晶显示器', 'CN108169943B', '本发明公开了一种液晶显示器，其包括：液晶面板，包括多个光电探测器、与多个光电探测器对应的多个第一子像素以及多个第二子像素，每个光电探测器和与其对应的至少一个第一子像素的开口区部分重叠；背光模块，与所述液晶面板相对设置，所述背光模块包括第一发光部和第二发光部，所述第一发光部与所述多个第一子像素相对，所述第二发光部与所述多个第二子像素相对，所述第一发光部的发光亮度大于所述第二发光部的发光亮度。本发明通过提升背光模块的与液晶面板的多个第一子像素相对的第一发光部的发光亮度来弥补第一子像素的穿透率的损失，从而使液晶面板的显示亮度均匀。', '本发明公开了一种液晶显示器，其包括：液晶面板，包括多个光电探测器、与多个光电探测器对应的多个第一子像素以及多个第二子像素，每个光电探测器和与其对应的至少一个第一子像素的开口区部分重叠；背光模块，与所述液晶面板相对设置，所述背光模块包括第一发光部和第二发光部，所述第一发光部与所述多个第一子像素相对，所述第二发光部与所述多个第二子像素相对，所述第一发光部的发光亮度大于所述第二发光部的发光亮度。本发明通过提升背光模块的与液晶面板的多个第一子像素相对的第一发光部的发光亮度来弥补第一子像素的穿透率的损失，从而使液晶面板的显示亮度均匀。', 'CN201810090389.1', 1517241600, 'CN108169943B', 1598889600, 1528992000, NULL, 1598889600, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 5, 5, NULL, NULL, 5, 0, 0, 0, 0, NULL, '913', NULL, '胡越', NULL, 'CN101846859A | CN105702176A | CN106970495A | US20120288139A1', NULL, NULL, 1, '\\20220510\\eab12f6f2fa544f88bfc4156c5317a25.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40577, 40579, 40578, 5);
INSERT INTO `os_patent` VALUES (23669, '微型发光二极管显示面板及其制作方法', '微型发光二极管显示面板及其制作方法', 'CN108183117A', '本发明公开了一种微型发光二极管显示面板，包括薄膜晶体管基板、设于薄膜晶体管基板顶部的底部电极、设于底部电极上的微型发光二极管芯片、设于微型发光二极管芯片顶部的顶部电极以及覆盖薄膜晶体管基板和微型发光二极管芯片的钝化层，多个底部电极相互间隔地阵列设置在薄膜晶体管基板顶部，底部电极的底端延伸至与薄膜晶体管基板的源极或漏极导通。本发明还公开了一种微型发光二极管显示面板的制作方法。本发明通过直接在薄膜晶体管基板上制作连接有底部电极和顶部电极的微型发光二极管芯片，使得显示面板的厚度大幅减薄，并能同时实现窄边框显示的效果。并且，微型发光二极管芯片旁为整层的钝化层，无需多次制备工艺，简化了制作工序。', '本发明公开了一种微型发光二极管显示面板，包括薄膜晶体管基板、设于薄膜晶体管基板顶部的底部电极、设于底部电极上的微型发光二极管芯片、设于微型发光二极管芯片顶部的顶部电极以及覆盖薄膜晶体管基板和微型发光二极管芯片的钝化层，多个底部电极相互间隔地阵列设置在薄膜晶体管基板顶部，底部电极的底端延伸至与薄膜晶体管基板的源极或漏极导通。本发明还公开了一种微型发光二极管显示面板的制作方法。本发明通过直接在薄膜晶体管基板上制作连接有底部电极和顶部电极的微型发光二极管芯片，使得显示面板的厚度大幅减薄，并能同时实现窄边框显示的效果。并且，微型发光二极管芯片旁为整层的钝化层，无需多次制备工艺，简化了制作工序。', 'CN201711432351.X', 1514217600, 'CN108183117A', 1529337600, 1529337600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 5, 15, 15, 15, 0, NULL, '913', NULL, NULL, NULL, 'CN102800777A | CN105144387A | CN105742441A | CN107331670A | WO2017014564A1', 'CN109166469A | CN109166877A | CN109166877B | CN109742200A | CN110085621A | CN110085621B | CN110112141A | CN110112141B | CN110289254A | CN111161641A | CN111161641B | CN111403372A | CN111933654A | CN113380766A | WO2020228532A1', NULL, 1, '\\20220510\\0b10c8e81b2c4e7d8c64e5cd60afde53.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40580, 40582, 40581, 3);
INSERT INTO `os_patent` VALUES (23670, '微型发光二极管显示面板及其制作方法', '微型发光二极管显示面板及其制作方法', 'CN108183156A', '本发明公开了一种微型发光二极管显示面板及其制作方法，该制作方法包括：提供一薄膜晶体管基板，并在其顶部开设沟槽以露出源极或漏极；在薄膜晶体管基板顶部制作平坦层；在平坦层上挖喇叭孔；在喇叭孔和沟槽内制作底部电极；将微型发光二极管芯片转移至底部电极；制作第一钝化层，使第一钝化层完全覆盖平坦层表面；在第一钝化层表面开通孔，使微型发光二极管芯片暴露；在通孔内制作顶部电极。本发明的底部电极具有对微型发光二极管芯片发出的光线进行二次利用的反射结构，并能改善微型发光二极管芯片发出的光线被薄膜晶体管基板和外围保护层的吸收状况，提高微型LED芯片的出光效率，可以进一步缩小LED芯片尺寸，从而提高显示面板的分辨率。', '本发明公开了一种微型发光二极管显示面板及其制作方法，该制作方法包括：提供一薄膜晶体管基板，并在其顶部开设沟槽以露出源极或漏极；在薄膜晶体管基板顶部制作平坦层；在平坦层上挖喇叭孔；在喇叭孔和沟槽内制作底部电极；将微型发光二极管芯片转移至底部电极；制作第一钝化层，使第一钝化层完全覆盖平坦层表面；在第一钝化层表面开通孔，使微型发光二极管芯片暴露；在通孔内制作顶部电极。本发明的底部电极具有对微型发光二极管芯片发出的光线进行二次利用的反射结构，并能改善微型发光二极管芯片发出的光线被薄膜晶体管基板和外围保护层的吸收状况，提高微型LED芯片的出光效率，可以进一步缩小LED芯片尺寸，从而提高显示面板的分辨率。', 'CN201711434477.0', 1514217600, 'CN108183156A', 1529337600, 1529337600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 4, NULL, NULL, 5, 20, 19, 19, 0, NULL, '913', NULL, NULL, NULL, 'CN103928491A | CN104838508A | CN105990398A | CN107331670A | US20140267683A1', 'CN109166877A | CN109166877B | CN109494292A | CN109494292B | CN109671734A | CN109671749A | CN109830499A | CN109830499B | CN110739380A | CN110739380B | CN111415926A | CN111415926B | CN112997314A | CN113228287A | TWI745025B | WO2019127701A1 | WO2020077538A1 | WO2021203552A1 | WO2021208179A1 | WO2021227219A1', NULL, 1, '\\20220510\\41a82d4d8e1c48038fdd3bbf60f86229.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40583, 40585, 40584, 4);
INSERT INTO `os_patent` VALUES (23671, '用于转移微发光二极管的转移头以及转移方法', '用于转移微发光二极管的转移头以及转移方法', 'CN108198773B', '本发明提供了一种用于转移微发光二极管的转移头以及转移方法。所述转移头包括：抓取部，由记忆合金形成，包括指状部分；温度控制元件，被构造为连接到抓取部，且控制抓取部的温度。根据所要转移的微发光二极管，所述指状部分被构造为：在第一温度下舒展，足以与微发光二极管分离；在第二温度下收缩，足以抓取微发光二极管。', '本发明提供了一种用于转移微发光二极管的转移头以及转移方法。所述转移头包括：抓取部，由记忆合金形成，包括指状部分；温度控制元件，被构造为连接到抓取部，且控制抓取部的温度。根据所要转移的微发光二极管，所述指状部分被构造为：在第一温度下舒展，足以与微发光二极管分离；在第二温度下收缩，足以抓取微发光二极管。', 'CN201711488568.2', 1514476800, 'CN108198773B', 1594915200, 1529596800, NULL, 1594915200, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 3, 0, 0, 0, 0, NULL, '913', NULL, '于鹏飞', NULL, 'CN105150712A | CN106601661A | US6398450B1', NULL, NULL, 1, '\\20220510\\7a8133e77fde4606b7f6d3ecaed59001.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40586, 40588, 40587, 2);
INSERT INTO `os_patent` VALUES (23672, '一种柔性LED器件及其制备方法', '一种柔性LED器件及其制备方法', 'CN108281518B', '本发明提供一种柔性LED器件及其制备方法，所述方法包括以下步骤：先提供一P‑型硅晶片为衬底，在所述衬底上旋涂一层光刻胶，通过曝光、显影制程，在所述衬底上获得一层图案化的P‑型硅微米柱；然后在所述P‑型硅微米柱之间的间隙填充软模高分子树脂，形成一层包括所述P‑型硅微米柱与所述软模高分子树脂的复合膜层；再在所述复合膜层上依次制备N‑型掺杂金属氧化物膜层、第一金属电极层；最后剥离所述衬底，在所述复合膜层剥离掉所述衬底一侧的表面上制备第二金属电极层，然后将其转移至柔性衬底上，形成一种发光均匀的柔性LED器件。', '本发明提供一种柔性LED器件及其制备方法，所述方法包括以下步骤：先提供一P‑型硅晶片为衬底，在所述衬底上旋涂一层光刻胶，通过曝光、显影制程，在所述衬底上获得一层图案化的P‑型硅微米柱；然后在所述P‑型硅微米柱之间的间隙填充软模高分子树脂，形成一层包括所述P‑型硅微米柱与所述软模高分子树脂的复合膜层；再在所述复合膜层上依次制备N‑型掺杂金属氧化物膜层、第一金属电极层；最后剥离所述衬底，在所述复合膜层剥离掉所述衬底一侧的表面上制备第二金属电极层，然后将其转移至柔性衬底上，形成一种发光均匀的柔性LED器件。', 'CN201810087983.5', 1517241600, 'CN108281518B', 1573747200, 1531411200, NULL, 1573747200, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 0, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 4, NULL, NULL, 5, 0, 0, 0, 0, NULL, '911', NULL, '张莉', NULL, 'CN102623590A | CN103022299A | CN107482088A | CN108037613A | US20090032800A1', NULL, NULL, 1, '\\20220510\\0d05b00fb3474d1a9c778d3e4297c643.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40589, 40591, 40590, 4);
INSERT INTO `os_patent` VALUES (23673, '背光模组及液晶显示装置', '背光模组及液晶显示装置', 'CN108287436B', '本发明提供一种背光模组及液晶显示装置。所述背光模组包括：基板、背光源、背光金手指、第一连接线、第二连接线及第三连接线，其中背光源位于所述基板的正面，背光金手指位于所述基板的背面，每一列的背光源的第一电极均通过对应的第一过孔与基板背面的第一连接线电性连接，每一行背光源的第二电极均通过一第二连接线连接到一起，每一条第二连接线均通过一第二过孔与基板的背面的一第三连接线电性连接，背光金手指电性连接第一连接线和第三连接线，能够优化背光模组的布线设计，减小背光边框大小，实现窄边框设计。', '本发明提供一种背光模组及液晶显示装置。所述背光模组包括：基板、背光源、背光金手指、第一连接线、第二连接线及第三连接线，其中背光源位于所述基板的正面，背光金手指位于所述基板的背面，每一列的背光源的第一电极均通过对应的第一过孔与基板背面的第一连接线电性连接，每一行背光源的第二电极均通过一第二连接线连接到一起，每一条第二连接线均通过一第二过孔与基板的背面的一第三连接线电性连接，背光金手指电性连接第一连接线和第三连接线，能够优化背光模组的布线设计，减小背光边框大小，实现窄边框设计。', 'CN201810098926.7', 1517328000, 'CN108287436B', 1614614400, 1531756800, NULL, 1614614400, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 10, 5, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 9, 0, 0, 0, 0, NULL, '909', NULL, '纪红', NULL, 'CN101349385A | CN103985820A | CN104167411A | CN104167485A | CN104635395A | CN105321937A | CN107195663A | CN206497900U | CN206619595U', NULL, NULL, 1, '\\20220510\\ef819ef7db2d484485416a242b5c320e.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40592, 40594, 40593, 2);
INSERT INTO `os_patent` VALUES (23674, '网版、面光源的制作方法及直下式背光模组的制作方法', '网版、面光源的制作方法及直下式背光模组的制作方法', 'CN108365081B', '本发明提供一种网版、面光源的制作方法及直下式背光模组的制作方法。所述网版包括间隔排列的数个开口及分别连通沿刮刀的刮涂方向排列的相邻开口的数个连通孔，在涂布锡膏时所述连通孔能平衡与该连通孔相邻的两个开口之间的锡膏高度，有效保证锡膏涂布的均匀性。所述面光源的制作方法使用上述网版，通过在所述网版上沿刮刀的刮涂方向排列的相邻的两个开口之间设置连通孔，所述连通孔的走向为与刮刀的刮涂方向相同，从而利用类似连通器的原理使MINI LED基板的焊盘上的锡膏量达到均衡，保证后续锡膏和MINI LED芯片的接触面平整均一，从而保证后续MINI LED芯片排布的均匀性和出光均匀性，提升面光源整面的亮度均一性。', '本发明提供一种网版、面光源的制作方法及直下式背光模组的制作方法。所述网版包括间隔排列的数个开口及分别连通沿刮刀的刮涂方向排列的相邻开口的数个连通孔，在涂布锡膏时所述连通孔能平衡与该连通孔相邻的两个开口之间的锡膏高度，有效保证锡膏涂布的均匀性。所述面光源的制作方法使用上述网版，通过在所述网版上沿刮刀的刮涂方向排列的相邻的两个开口之间设置连通孔，所述连通孔的走向为与刮刀的刮涂方向相同，从而利用类似连通器的原理使MINI LED基板的焊盘上的锡膏量达到均衡，保证后续锡膏和MINI LED芯片的接触面平整均一，从而保证后续MINI LED芯片排布的均匀性和出光均匀性，提升面光源整面的亮度均一性。', 'CN201810481780.4', 1526572800, 'CN108365081B', 1570723200, 1533225600, NULL, 1570723200, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 10, 4, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 7, 0, 0, 0, 0, NULL, '909', NULL, '张佳良', NULL, 'CN102891213A | CN107634105A | CN204104221U | JP2002307857A | JP2014043074A | US5373786A | US5830307A', NULL, NULL, 1, '\\20220510\\286b30c46e4642fd8d107b30b9009efc.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 40595, 40597, 40596, 2);
INSERT INTO `os_patent` VALUES (23675, '一种微晶粒发光二极管显示面板', '一种微晶粒发光二极管显示面板', 'CN108447407B', '本发明提供一种微晶粒发光二极管显示面板，显示面板包括柔性基板、阵列排布的多个发光二极管、位于多个发光二极管上方的衍射光栅以及光散射膜、位于光散射膜上方的多个光阀；其中，柔性基板包含有驱动电路，多个发光二极管固定在柔性基板上；驱动电路与多个发光二极管连接，用于分别驱动多个发光二极管发出白光；衍射光栅用于将发光二极管发出的白光进行分光，形成多种不同波长的出射光；光散射膜用于将出射光中相同波长的出射光聚集，将不同波长的出射光进行分散，形成至少一种颜色的基色光；多个光阀用于分别调节基色光的强度。本发明中的显示面板可以做到更加轻薄且具有柔性，还不会增加显示面板的功耗。', '本发明提供一种微晶粒发光二极管显示面板，显示面板包括柔性基板、阵列排布的多个发光二极管、位于多个发光二极管上方的衍射光栅以及光散射膜、位于光散射膜上方的多个光阀；其中，柔性基板包含有驱动电路，多个发光二极管固定在柔性基板上；驱动电路与多个发光二极管连接，用于分别驱动多个发光二极管发出白光；衍射光栅用于将发光二极管发出的白光进行分光，形成多种不同波长的出射光；光散射膜用于将出射光中相同波长的出射光聚集，将不同波长的出射光进行分散，形成至少一种颜色的基色光；多个光阀用于分别调节基色光的强度。本发明中的显示面板可以做到更加轻薄且具有柔性，还不会增加显示面板的功耗。', 'CN201810135165.8', 1518105600, 'CN108447407B', 1586793600, 1535040000, NULL, 1586793600, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 5, NULL, NULL, 7, 0, 0, 0, 0, NULL, '915', NULL, '周秀杰', NULL, 'CN101783099A | CN104865750A | CN105609597A | CN105842925A | CN105976725A | CN106876408A | CN106997888A', NULL, NULL, 1, '\\20220510\\c6e72848e25b47aaa7744081f09e6614.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 40598, 40600, 40599, 5);
INSERT INTO `os_patent` VALUES (23676, 'Mini LED背光模组及荧光膜层的制作方法', 'Mini LED背光模组及荧光膜层的制作方法', 'CN108488693A', '一种Mini LED背光模组，包括LED光源和荧光膜层，所述LED光源包括基板和阵列排布在所述基板的mini LED灯珠，所述荧光膜层设置在所述LED光源的出光方向上，所述荧光膜层朝向所述mini LED灯珠的表面开设有阵列设置的凹槽。本发明还公开了一种荧光膜层的制作方法。本发明通过设计一种具有特定形状的荧光膜层，并将其放置在mini LED灯珠正前方，即可避免漏光并改变光线路径，从而解决了Mini LED背光过程中的灯影和四周漏光的问题，简单易行，且降低了制作成本。', '一种Mini LED背光模组，包括LED光源和荧光膜层，所述LED光源包括基板和阵列排布在所述基板的mini LED灯珠，所述荧光膜层设置在所述LED光源的出光方向上，所述荧光膜层朝向所述mini LED灯珠的表面开设有阵列设置的凹槽。本发明还公开了一种荧光膜层的制作方法。本发明通过设计一种具有特定形状的荧光膜层，并将其放置在mini LED灯珠正前方，即可避免漏光并改变光线路径，从而解决了Mini LED背光过程中的灯影和四周漏光的问题，简单易行，且降低了制作成本。', 'CN201810265118.5', 1522166400, 'CN108488693A', 1535990400, 1535990400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 19, 6, 4, 4, 0, NULL, '913', NULL, NULL, NULL, 'CN101649975A | CN102565921A | CN102829392A | CN103244872A | CN104006334A | CN105259700A | CN106226949A | CN107092051A | CN107403861A | CN107422529A | CN201621532U | CN201757335U | CN202101059U | CN203273509U | CN206411377U | CN206450928U | CN206863415U | US20020017857A1 | US20050174038A1', 'CN109061945A | CN109061945B | CN109367869A | CN109445180A | CN111128040A | CN111901968A', NULL, 1, '\\20220510\\c8914d99b6b144df93d8e5215de0a616.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40601, 40603, 40602, 4);
INSERT INTO `os_patent` VALUES (23677, 'Micro LED显示面板的制作方法及Micro LED显示面板', 'Micro LED显示面板的制作方法及Micro LED显示面板', 'CN108493154B', '本发明提供一种Micro LED显示面板的制作方法及Micro LED显示面板。所述Micro LED显示面板的制作方法通过在位于封装基板上的上像素电极上形成弹性导电层，在封装基板与驱动基板对组时，通过弹性导电层实现上像素电极与Micro LED的上电极的电性连接，可利用弹性导电层的弹性填补各个Micro LED之间的高度差，避免上像素电极与Micro LED的上电极的连接不良，提升Micro LED显示面板的对组效果和Micro LED显示面板的制程良率。', '本发明提供一种Micro LED显示面板的制作方法及Micro LED显示面板。所述Micro LED显示面板的制作方法通过在位于封装基板上的上像素电极上形成弹性导电层，在封装基板与驱动基板对组时，通过弹性导电层实现上像素电极与Micro LED的上电极的电性连接，可利用弹性导电层的弹性填补各个Micro LED之间的高度差，避免上像素电极与Micro LED的上电极的连接不良，提升Micro LED显示面板的对组效果和Micro LED显示面板的制程良率。', 'CN201810403827.5', 1524844800, 'CN108493154B', 1601308800, 1535990400, NULL, 1601308800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 5, NULL, NULL, 2, 0, 0, 0, 0, NULL, '909', NULL, '李静', NULL, 'CN101097911A | CN107068707A', NULL, NULL, 1, '\\20220510\\7e23ff5e226b49c49515e4cc3faca0d0.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 40604, 40606, 40605, 5);
INSERT INTO `os_patent` VALUES (23678, '直下式背光模组及其制作方法', '直下式背光模组及其制作方法', 'CN108535916B', '本发明提供了一种直下式背光模组及其制作方法。所述直下式背光模组包括：驱动基板、设于所述驱动基板上的反射层、阵列排布于所述反射层上的多个Mini‑LED、间隔分布于反射层上且位于各个Mini‑LED之间的多个反射凸点以及设于所述Mini‑LED、反射凸点以及反射层上的光学膜片组，所述多个Mini‑LED与所述驱动基板电性连接，其通过在所述驱动基板上设置反射层，在所述反射层上设置多个反射凸点，利用所述多个反射凸点形成一光提取网点结构，通过所述光提取网点结构散射光线至不同的角度，提升背光模组的出光效率。', '本发明提供了一种直下式背光模组及其制作方法。所述直下式背光模组包括：驱动基板、设于所述驱动基板上的反射层、阵列排布于所述反射层上的多个Mini‑LED、间隔分布于反射层上且位于各个Mini‑LED之间的多个反射凸点以及设于所述Mini‑LED、反射凸点以及反射层上的光学膜片组，所述多个Mini‑LED与所述驱动基板电性连接，其通过在所述驱动基板上设置反射层，在所述反射层上设置多个反射凸点，利用所述多个反射凸点形成一光提取网点结构，通过所述光提取网点结构散射光线至不同的角度，提升背光模组的出光效率。', 'CN201810362823.7', 1524153600, 'CN108535916B', 1588003200, 1536854400, NULL, 1588003200, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 10, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 5, NULL, NULL, 4, 0, 0, 0, 0, NULL, '909', NULL, '刘丹', NULL, 'CN104246360A | CN105334665A | CN107884987A | CN107908041A', NULL, NULL, 1, '\\20220510\\16f5638fc90a489cb81f6807dcaddffe.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40607, 40609, 40608, 5);
INSERT INTO `os_patent` VALUES (23679, 'Micro LED显示面板的制作方法', 'Micro LED显示面板的制作方法', 'CN108538877B', '本发明提供了一种Micro LED显示面板的制作方法。所述Micro LED显示面板的制作方法包括如下步骤：步骤S1、提供一驱动基板，在驱动基板上形成光刻胶层；步骤S2、对所述光刻胶层进行图案化处理，形成阵列排布的多个容置槽；步骤S3、在所述各个容置槽内设置Micro LED；通过图案化光刻胶层制作容置Micro LED的容置槽，能够降低制程难度，提升Micro LED的出光效率。', '本发明提供了一种Micro LED显示面板的制作方法。所述Micro LED显示面板的制作方法包括如下步骤：步骤S1、提供一驱动基板，在驱动基板上形成光刻胶层；步骤S2、对所述光刻胶层进行图案化处理，形成阵列排布的多个容置槽；步骤S3、在所述各个容置槽内设置Micro LED；通过图案化光刻胶层制作容置Micro LED的容置槽，能够降低制程难度，提升Micro LED的出光效率。', 'CN201810474811.3', 1526486400, 'CN108538877B', 1598889600, 1536854400, NULL, 1598889600, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 19, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 5, 5, NULL, NULL, 6, 0, 0, 0, 0, NULL, '909', NULL, '王光军', NULL, 'CN104752580A | CN106646890A | CN106784203A | CN107221291A | US20080290796A1 | WO2017107097A1', NULL, NULL, 1, '\\20220510\\53f67722b1c74b518bd57ebebc82965c.png', NULL, NULL, 1, NULL, NULL, 17, NULL, NULL, NULL, 40610, 40612, 40611, 5);
INSERT INTO `os_patent` VALUES (23680, '背光面光源及液晶显示装置', '背光面光源及液晶显示装置', 'CN108563069B', '本发明提供一种背光面光源及液晶显示装置。本发明的背光面光源包括Mini LED基板及设于所述Mini LED基板上的数个Mini LED，所述Mini LED的尺寸为微米级别，能够极大地降低背光面光源的厚度；且所述Mini LED基板设有通孔，所述数个Mini LED绕开通孔均匀设置在Mini LED基板上，一方面能够减少设置Mini LED以降低生产成本，另一方面能够保证背光面光源均匀发光。本发明的液晶显示装置包括上述背光面光源，所述背光面光源厚度较薄且能够均匀发光，有利于液晶显示装置的薄型化设计，增强了产品的差异化性能，提升了产品的市场竞争力。', '本发明提供一种背光面光源及液晶显示装置。本发明的背光面光源包括Mini LED基板及设于所述Mini LED基板上的数个Mini LED，所述Mini LED的尺寸为微米级别，能够极大地降低背光面光源的厚度；且所述Mini LED基板设有通孔，所述数个Mini LED绕开通孔均匀设置在Mini LED基板上，一方面能够减少设置Mini LED以降低生产成本，另一方面能够保证背光面光源均匀发光。本发明的液晶显示装置包括上述背光面光源，所述背光面光源厚度较薄且能够均匀发光，有利于液晶显示装置的薄型化设计，增强了产品的差异化性能，提升了产品的市场竞争力。', 'CN201810380782.4', 1524585600, 'CN108563069B', 1603987200, 1537459200, NULL, 1603987200, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 4, NULL, NULL, 1, 0, 0, 0, 0, NULL, '909', NULL, '施素婷', NULL, 'US20130100648A1', NULL, NULL, 1, '\\20220510\\e9b8a49471d94fa7a1e1727b092c2736.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40613, 40615, 40614, 4);
INSERT INTO `os_patent` VALUES (23681, '驱动基板、制备方法及微型LED阵列发光背光模组', '驱动基板、制备方法及微型LED阵列发光背光模组', 'CN108591974A', '本发明涉及一种驱动基板、制备方法及微型LED阵列发光背光模组。该驱动基板包括：由下至上顺序堆叠的第一金属层，第一高反射层，以及第二金属层。本发明还提供了相应的制备方法及微型LED阵列发光背光模组。本发明的驱动基板、制备方法及微型LED阵列发光背光模组解决了微型LED阵列发光背光由于传统高反射层刻蚀工艺误差所造成的电极焊盘边缘禁制区所造成的反射率损失，同时也可以解决传统涂覆高反射层(如白油)反射率有限的问题。', '本发明涉及一种驱动基板、制备方法及微型LED阵列发光背光模组。该驱动基板包括：由下至上顺序堆叠的第一金属层，第一高反射层，以及第二金属层。本发明还提供了相应的制备方法及微型LED阵列发光背光模组。本发明的驱动基板、制备方法及微型LED阵列发光背光模组解决了微型LED阵列发光背光由于传统高反射层刻蚀工艺误差所造成的电极焊盘边缘禁制区所造成的反射率损失，同时也可以解决传统涂覆高反射层(如白油)反射率有限的问题。', 'CN201810374876.0', 1524499200, 'CN108591974A', 1538064000, 1538064000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 4, NULL, NULL, 8, 4, 4, 4, 0, NULL, '909', NULL, NULL, NULL, 'CN101071232A | CN102950835A | CN103151445A | CN103676276A | CN106782128A | CN107910322A | CN201813610U | CN204285130U', 'CN109683394A | CN110456574A | CN112582524A | WO2020113731A1', NULL, 1, '\\20220510\\87182cc536f74df78bf052d0549e5425.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40616, 40618, 40617, 4);
INSERT INTO `os_patent` VALUES (23682, '显示装置', '显示装置', 'CN108597382A', '本发明提供一种显示装置。该显示装置在拼接显示面板上方设置电致发光显示面板，电致发光显示面板的电致发光层在拼接显示面板上的正投影与拼接显示面板的边框重叠，且电致发光层包括多个电致发光器件，工作时，拼接显示面板的多个子显示面板与电致发光显示面板的多个电致发光器件同时发光从而显示画面，能够消除由于在拼接显示面板中设置边框而在显示画面上产生的黑线，提升显示效果，具有良好的产品品质。', '本发明提供一种显示装置。该显示装置在拼接显示面板上方设置电致发光显示面板，电致发光显示面板的电致发光层在拼接显示面板上的正投影与拼接显示面板的边框重叠，且电致发光层包括多个电致发光器件，工作时，拼接显示面板的多个子显示面板与电致发光显示面板的多个电致发光器件同时发光从而显示画面，能够消除由于在拼接显示面板中设置边框而在显示画面上产生的黑线，提升显示效果，具有良好的产品品质。', 'CN201810373350.0', 1524499200, 'CN108597382A', 1538064000, 1538064000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 5, 4, 3, 3, 0, NULL, '909', NULL, NULL, NULL, 'CN105044964A | CN106033159A | CN201374154Y | CN206697160U | JP2007192977A', 'CN108873482A | CN109785763A | CN110034105A | US11211367B2', NULL, 1, '\\20220510\\c723f4958d844d1289a433cac678485a.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40619, 40621, 40620, 4);
INSERT INTO `os_patent` VALUES (23683, '液晶显示器', '液晶显示器', 'CN108681118B', '本发明提供一种液晶显示器，包括MINI LED基板、设于所述MINI LED基板一侧面的数个MINI LED芯片、设于所述MINI LED基板另一侧面的MINI LED驱动IC以及覆盖所述数个MINI LED芯片的荧光膜，所述MINI LED驱动IC驱动所述数个MINI LED芯片发光，相比于现有技术来说，不需要将MINI LED驱动IC设置在柔性电路板组件上，节省了一个连接器，避免压缩柔性电路板组件的设计空间，同时有效减小MINI LED驱动IC与所述数个MINI LED芯片电性连接的走线难度，降低了制作成本。', '本发明提供一种液晶显示器，包括MINI LED基板、设于所述MINI LED基板一侧面的数个MINI LED芯片、设于所述MINI LED基板另一侧面的MINI LED驱动IC以及覆盖所述数个MINI LED芯片的荧光膜，所述MINI LED驱动IC驱动所述数个MINI LED芯片发光，相比于现有技术来说，不需要将MINI LED驱动IC设置在柔性电路板组件上，节省了一个连接器，避免压缩柔性电路板组件的设计空间，同时有效减小MINI LED驱动IC与所述数个MINI LED芯片电性连接的走线难度，降低了制作成本。', 'CN201810482888.5', 1526572800, 'CN108681118B', 1603987200, 1539878400, NULL, 1603987200, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 11, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 10, 0, 0, 0, 0, NULL, '909', NULL, '曹梦军', NULL, 'CN101688650A | CN106449621A | CN107091412A | CN107093659A | CN1567034A | CN1844977A | CN201638845U | CN204130588U | CN205335291U | JP2007226065A', NULL, NULL, 1, '\\20220510\\573a989e6283480d941d1052f573fa57.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40622, 40624, 40623, 4);
INSERT INTO `os_patent` VALUES (23684, '面光源背光模组及液晶显示面板', '面光源背光模组及液晶显示面板', 'CN108732816B', '本发明提供一种面光源背光模组及液晶显示面板。所述面光源背光模组包括Mini LED基板、间隔设于所述Mini LED基板上的数个Mini LED芯片以及覆盖所述数个Mini LED芯片的荧光膜，通过在所述荧光膜远离所述数个Mini LED芯片一侧的表面设有数个微结构，使所述数个Mini LED可以实现更大角度的出光，改善面光源背光模组的混光均匀性，达到节省光学膜片即可实现均匀混光的目的，从而提高面光源的穿透率和亮度，同时有利于面光源背光模组的薄化设计。', '本发明提供一种面光源背光模组及液晶显示面板。所述面光源背光模组包括Mini LED基板、间隔设于所述Mini LED基板上的数个Mini LED芯片以及覆盖所述数个Mini LED芯片的荧光膜，通过在所述荧光膜远离所述数个Mini LED芯片一侧的表面设有数个微结构，使所述数个Mini LED可以实现更大角度的出光，改善面光源背光模组的混光均匀性，达到节省光学膜片即可实现均匀混光的目的，从而提高面光源的穿透率和亮度，同时有利于面光源背光模组的薄化设计。', 'CN201810495944.9', 1526918400, 'CN108732816B', 1624550400, 1541088000, NULL, 1624550400, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 9, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 4, NULL, NULL, 11, 0, 0, 0, 0, NULL, '909', NULL, '杨金新', NULL, 'CN103090277A | CN103851371A | CN104121517A | CN104134743A | CN105044815A | CN107093659A | CN107886853A | CN1928651A | CN201439880U | CN201757337U | US20020063520A1', NULL, NULL, 1, '\\20220510\\e6cadb48f429453e9a00630275b943d0.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 40625, 40627, 40626, 4);
INSERT INTO `os_patent` VALUES (23685, '面光源及面光源的检测方法', '面光源及面光源的检测方法', 'CN108758540A', '本发明提供一种面光源的检测方法及面光源，该面光源包括驱动基板、驱动电路和多个mini‑LED芯片，多个mini‑LED芯片阵列排布在驱动基板上，并与驱动基板上设置的驱动电路电连接，每个mini‑LED芯片均与驱动电路并联，每个mini‑LED芯片的电压为驱动电路的电压，驱动电路提供与多个mini‑LED芯片数量对应的多份驱动电流。通过设置阵列排列的多个mini‑LED芯片，每个mini‑LED芯片均与驱动电路并联，每个mini‑LED芯片的电压为驱动电路的电压，驱动电路提供与多个mini‑LED芯片数量对应的多份驱动电流，使得每个mini‑LED芯片仅需提供对应的一份驱动电流即可点亮，在面光源上制作不同数量的mini‑LED芯片时，调整驱动电流的份数即可，使得驱动电路的结构可简化，降低了驱动电路的设计难度和发生故障的风险。', '本发明提供一种面光源的检测方法及面光源，该面光源包括驱动基板、驱动电路和多个mini‑LED芯片，多个mini‑LED芯片阵列排布在驱动基板上，并与驱动基板上设置的驱动电路电连接，每个mini‑LED芯片均与驱动电路并联，每个mini‑LED芯片的电压为驱动电路的电压，驱动电路提供与多个mini‑LED芯片数量对应的多份驱动电流。通过设置阵列排列的多个mini‑LED芯片，每个mini‑LED芯片均与驱动电路并联，每个mini‑LED芯片的电压为驱动电路的电压，驱动电路提供与多个mini‑LED芯片数量对应的多份驱动电流，使得每个mini‑LED芯片仅需提供对应的一份驱动电流即可点亮，在面光源上制作不同数量的mini‑LED芯片时，调整驱动电流的份数即可，使得驱动电路的结构可简化，降低了驱动电路的设计难度和发生故障的风险。', 'CN201810523780.6', 1527436800, 'CN108758540A', 1541433600, 1541433600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 5, 6, 6, 6, 2, NULL, '914', NULL, NULL, NULL, 'CN104821144A | CN107064662A | CN107886853A | CN203287485U | US20090295425A1', 'CN109979959A | CN109979959B | CN111681616A | CN113724646A | CN113724646B | WO2021248970A1', '徐如: \"《基于探针测试仪的电参数测试》\", 31 December 2011 | 沙占友: \"《LED驱动电源设计入门》\", 31 July 2011, 中国电力出版社', 1, '\\20220510\\37a7021f2b644bc997cca248fcfeaeec.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40628, 40630, 40629, 1);
INSERT INTO `os_patent` VALUES (23686, '一种紫外固化系统以及紫外固化设备', '一种紫外固化系统以及紫外固化设备', 'CN108855828A', '本发明提供的紫外固化系统以及紫外固化设备，包括：承载台，承载台具有一用于支撑显示面板的支撑面；发光单元，发光单元朝向支撑面设置；其中，在发光单元的出光方向上，还设置有光学透镜，光学透镜用于将发光单元发出的光线汇集至显示面板上。发光单元的出光方向上设置光学透镜，能够使发光单元发出的光线汇集至显示面板上，不仅能够提高能量利用率，并且还可以提高照度均匀性。', '本发明提供的紫外固化系统以及紫外固化设备，包括：承载台，承载台具有一用于支撑显示面板的支撑面；发光单元，发光单元朝向支撑面设置；其中，在发光单元的出光方向上，还设置有光学透镜，光学透镜用于将发光单元发出的光线汇集至显示面板上。发光单元的出光方向上设置光学透镜，能够使发光单元发出的光线汇集至显示面板上，不仅能够提高能量利用率，并且还可以提高照度均匀性。', 'CN201810939460.9', 1534435200, 'CN108855828A', 1542902400, 1542902400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 9, 1, 1, 1, 0, NULL, '911', NULL, NULL, NULL, 'CN101976004A | CN104084368A | CN106195668A | CN107768397A | CN206357634U | CN207408739U | CN2803534Y | US20070013830A1 | US20160209689A1', 'CN109597248A', NULL, 1, '\\20220510\\ff00edf8e76a47e4bdeef74c3e415b2c.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40631, 40633, 40632, 1);
INSERT INTO `os_patent` VALUES (23687, '发光二极管及使用所述发光二极管的背光模组', '发光二极管及使用所述发光二极管的背光模组', 'CN108933188A', '提供一发光二极管，包括：一基板；一第一半导体层，设置于所述基板上；一发光层，设置于所述第一半导体层的第一部分上；一第二半导体层，设置于所述发光层上；一第一电极，设置于所述第一半导体层的第二部分上，所述第一部分与所述第二部分不重迭；以及一第二电极，设置于所述第二半导体层上；其中所述第一电极的厚度大于所述第二电极的厚度。还提供包含所述发光二极管的背光模组。', '提供一发光二极管，包括：一基板；一第一半导体层，设置于所述基板上；一发光层，设置于所述第一半导体层的第一部分上；一第二半导体层，设置于所述发光层上；一第一电极，设置于所述第一半导体层的第二部分上，所述第一部分与所述第二部分不重迭；以及一第二电极，设置于所述第二半导体层上；其中所述第一电极的厚度大于所述第二电极的厚度。还提供包含所述发光二极管的背光模组。', 'CN201811039410.1', 1536163200, 'CN108933188A', 1543852800, 1543852800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 0, 3, 3, 3, 0, NULL, '911', NULL, NULL, NULL, NULL, 'CN110571317A | CN110571317B | CN111446354A', NULL, 1, '\\20220510\\3e94b9c88aa94ae4b9e4f70706bb11d5.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40634, 40636, 40635, 5);
INSERT INTO `os_patent` VALUES (23688, '侧入式背光模组以及液晶显示装置', '侧入式背光模组以及液晶显示装置', 'CN108983492A', '本发明公开了一种侧入式背光模组，包括导光板和位于所述导光板侧面的光源组件，所述光源组件包括PCB板和连接在所述PCB板上的多个LED芯片，每一所述LED芯片的侧面分别设置有限位件，所述限位件的顶端凸起于所述LED芯片的出光面并抵触连接到所述导光板的入光面，以限定所述LED芯片的出光面和所述导光板的入光面之间的耦光距离。本发明还公开了包含如上所述侧入式背光模组的液晶显示装置。本发明可以实现高密度的光源并可以有效地限定光源出光面与导光板的入光面之间的耦光距离。', '本发明公开了一种侧入式背光模组，包括导光板和位于所述导光板侧面的光源组件，所述光源组件包括PCB板和连接在所述PCB板上的多个LED芯片，每一所述LED芯片的侧面分别设置有限位件，所述限位件的顶端凸起于所述LED芯片的出光面并抵触连接到所述导光板的入光面，以限定所述LED芯片的出光面和所述导光板的入光面之间的耦光距离。本发明还公开了包含如上所述侧入式背光模组的液晶显示装置。本发明可以实现高密度的光源并可以有效地限定光源出光面与导光板的入光面之间的耦光距离。', 'CN201810826917.5', 1532448000, 'CN108983492A', 1544457600, 1544457600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 7, 1, 1, 1, 0, NULL, '913', NULL, NULL, NULL, 'CN102374451A | CN103017011A | CN104214608A | CN104244583A | CN105090800A | CN108287437A | CN205716741U', 'WO2022036646A1', NULL, 1, '\\20220510\\4ea3946ef450412c9506d57a95d609c6.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40637, 40639, 40638, 1);
INSERT INTO `os_patent` VALUES (23689, '背光模组及其制作方法', '背光模组及其制作方法', 'CN108983494A', '本发明公开了一种背光模组及其制作方法。该背光模组，包括：基板，具有第一表面以及与所述第一表面相对的第二表面；量子点材料层，设置于所述第二表面上；发光模块，设置于所述第一表面上，所述发光模块用于朝所述量子点材料层发射光线；反射结构，设置于所述量子点材料层的背向所述基板的表面上。本发明的公开的背光模组，通过将量子点材料层整合设置在基板和反射结构之间，基板和反射结构可起到阻隔水汽和氧气的作用，不需要设置成本昂贵的阻隔膜来保护量子点材料，有利于减少背光模组的成本。另外，由于不需要设置阻隔膜，降低了背光模组的整体厚度。', '本发明公开了一种背光模组及其制作方法。该背光模组，包括：基板，具有第一表面以及与所述第一表面相对的第二表面；量子点材料层，设置于所述第二表面上；发光模块，设置于所述第一表面上，所述发光模块用于朝所述量子点材料层发射光线；反射结构，设置于所述量子点材料层的背向所述基板的表面上。本发明的公开的背光模组，通过将量子点材料层整合设置在基板和反射结构之间，基板和反射结构可起到阻隔水汽和氧气的作用，不需要设置成本昂贵的阻隔膜来保护量子点材料，有利于减少背光模组的成本。另外，由于不需要设置阻隔膜，降低了背光模组的整体厚度。', 'CN201810839934.2', 1532620800, 'CN108983494A', 1544457600, 1544457600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 7, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 11, 0, 0, 0, 0, NULL, '913', NULL, NULL, NULL, 'CN105511153A | CN105988243A | CN107422529A | CN107799507A | CN107833879A | CN108107628A | CN108150968A | CN108303819A | CN202332142U | KR1020130034152A | US20140192515A1', NULL, NULL, 1, '\\20220510\\4fe23ccac7894c9ca752b0a0e5bd1118.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40640, 40642, 40641, 1);
INSERT INTO `os_patent` VALUES (23690, '电子装置', '电子装置', 'CN109005255A', '本发明公开一种电子装置，其包含本体、盖板、第二摄像头及指纹辨识感应层，其中所述本体具有贯穿所述本体的前表面的安装腔；所述盖板安装于所述本体的前表面并遮盖所述安装腔；所述第二摄像头位于所述盖板的靠近所述安装腔的一侧；及所述指纹辨识感应层位于所述盖板和所述第二摄像头之间。', '本发明公开一种电子装置，其包含本体、盖板、第二摄像头及指纹辨识感应层，其中所述本体具有贯穿所述本体的前表面的安装腔；所述盖板安装于所述本体的前表面并遮盖所述安装腔；所述第二摄像头位于所述盖板的靠近所述安装腔的一侧；及所述指纹辨识感应层位于所述盖板和所述第二摄像头之间。', 'CN201810689325.3', 1530115200, 'CN109005255A', 1544716800, 1544716800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 10, 0, 0, 0, 0, NULL, '911', NULL, NULL, NULL, 'CN105303177A | CN105469030A | CN106557110A | CN108429840A | CN108833628A | CN203573021U | CN205247127U | CN205647831U | CN206585603U | JP2006171248A', NULL, NULL, 1, '\\20220510\\122afaf482fd422ba8aab584ea03def0.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40643, 40645, 40644, 1);
INSERT INTO `os_patent` VALUES (23691, '显示面板及显示装置', '显示面板及显示装置', 'CN109119452A', '本申请提供了一种显示面板，包括：基板，基板包括相对设置的第一表面和第二表面；电极层，电极层设置在基板的第一表面上；反射功能层，反射功能层设置在电极层上，用于降低电极层的反射率。本申请实施例的显示面板通过在电极层上设置反射功能层，该反射功能层用于降低该电极层的反射率，即，当外界光源的光线射入显示面板时，光线需经过反射功能层，从而可以减弱显示面板中金属电极反射外界光源的光线对显示面板造成的影响，进而提高显示质量；并且本申请实施例中的显示面板并不需要使用偏光片来降低金属电极的反射率，从而可以提高显示面板的光能利用率。', '本申请提供了一种显示面板，包括：基板，基板包括相对设置的第一表面和第二表面；电极层，电极层设置在基板的第一表面上；反射功能层，反射功能层设置在电极层上，用于降低电极层的反射率。本申请实施例的显示面板通过在电极层上设置反射功能层，该反射功能层用于降低该电极层的反射率，即，当外界光源的光线射入显示面板时，光线需经过反射功能层，从而可以减弱显示面板中金属电极反射外界光源的光线对显示面板造成的影响，进而提高显示质量；并且本申请实施例中的显示面板并不需要使用偏光片来降低金属电极的反射率，从而可以提高显示面板的光能利用率。', 'CN201811085514.6', 1537200000, 'CN109119452A', 1546272000, 1546272000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 3, NULL, NULL, 5, 9, 9, 9, 0, NULL, '911', NULL, NULL, NULL, 'CN104952901A | CN107850811A | CN108139638A | CN108336144A | JP2015118982A', 'CN110112141A | CN110112141B | CN112768590A | CN112993117A | US11164929B2 | US11316003B2 | WO2020147491A1 | WO2020211537A1 | WO2021159564A1', NULL, 1, '\\20220510\\2a3900a11e7a4079972c0af9b34f7eaa.png', NULL, NULL, 1, NULL, NULL, 11, NULL, NULL, NULL, 40646, 40648, 40647, 3);
INSERT INTO `os_patent` VALUES (23692, '一种显示面板及其制备方法', '一种显示面板及其制备方法', 'CN109192761B', '本发明提供一种显示面板及其制备方法，所述显示面板包括：底部弹性封装层，包括对应像素单元的像素预留区域以及对应相邻两所述像素单元之间的金属布线预留区域；柔性衬底单元，对应所述像素预留区域阵列的设置于所述底部弹性封装层上；在所述柔性衬底单元上依次层叠设置有薄膜晶体管单元以及所述像素单元，形成独立间隔的显示单元；信号走线，用于连接相邻两所述显示单元，以实现相邻两所述显示单元的信号传输；顶部弹性封装层，设置于所述显示单元表面；其中，所述信号走线对应所述金属布线预留区域的部分呈曲线设置，且夹设于所述底部弹性封装层与所述顶部弹性封装层的表面。', '本发明提供一种显示面板及其制备方法，所述显示面板包括：底部弹性封装层，包括对应像素单元的像素预留区域以及对应相邻两所述像素单元之间的金属布线预留区域；柔性衬底单元，对应所述像素预留区域阵列的设置于所述底部弹性封装层上；在所述柔性衬底单元上依次层叠设置有薄膜晶体管单元以及所述像素单元，形成独立间隔的显示单元；信号走线，用于连接相邻两所述显示单元，以实现相邻两所述显示单元的信号传输；顶部弹性封装层，设置于所述显示单元表面；其中，所述信号走线对应所述金属布线预留区域的部分呈曲线设置，且夹设于所述底部弹性封装层与所述顶部弹性封装层的表面。', 'CN201811015747.9', 1535644800, 'CN109192761B', 1592236800, 1547136000, NULL, 1592236800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 4, 0, 0, 0, 0, NULL, '911', NULL, '崔双魁', NULL, 'CN103311265A | CN106249975A | CN107086236A | US20040124763A1', NULL, NULL, 1, '\\20220510\\cee8b639fab34722a62314d8a7eae7ad.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40649, 40651, 40650, 3);
INSERT INTO `os_patent` VALUES (23693, '发光单元及其制造方法', '发光单元及其制造方法', 'CN109216523A', '本揭示提供一种发光单元及其制造方法。发光单元包含：发光二极管芯片，包含一出光面；以及光学功能膜，设置在所述发光二极管芯片的所述出光面，其中所述光学功能膜在350纳米至480纳米的波长范围的光透过率大于95％。', '本揭示提供一种发光单元及其制造方法。发光单元包含：发光二极管芯片，包含一出光面；以及光学功能膜，设置在所述发光二极管芯片的所述出光面，其中所述光学功能膜在350纳米至480纳米的波长范围的光透过率大于95％。', 'CN201811000766.4', 1535558400, 'CN109216523A', 1547481600, 1547481600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 5, 0, 0, 0, 0, NULL, '911', NULL, NULL, NULL, 'CN105006508A | CN106299076A | CN107195744A | CN107359222A | US20060033116A1', NULL, NULL, 1, '\\20220510\\8c5ec7913c974e78bab0fb24a04fd798.png', NULL, NULL, 1, NULL, NULL, 18, NULL, NULL, NULL, 40652, 40654, 40653, 3);
INSERT INTO `os_patent` VALUES (23694, '背光装置及其制造方法', '背光装置及其制造方法', 'CN109300887A', '一种背光装置及其制造方法，所述背光装置包括一基板、一发光二极管层以及一带通滤光片。所述发光二极管层设于所述基板上，并包括多个间隔设置的发光二极管芯片。所述带通滤光片设于所述发光二极管层上，其中所述带通滤光片在对应所述发光二极管芯片的位置上设有开孔。', '一种背光装置及其制造方法，所述背光装置包括一基板、一发光二极管层以及一带通滤光片。所述发光二极管层设于所述基板上，并包括多个间隔设置的发光二极管芯片。所述带通滤光片设于所述发光二极管层上，其中所述带通滤光片在对应所述发光二极管芯片的位置上设有开孔。', 'CN201811155955.9', 1538236800, 'CN109300887A', 1548950400, 1548950400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 0, 1, 1, 1, 0, NULL, '911', NULL, NULL, NULL, NULL, 'CN111128040A', NULL, 1, '\\20220510\\fc9ece3d07a846ff80095c1f708bcd1f.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40655, 40657, 40656, 4);
INSERT INTO `os_patent` VALUES (23695, '显示面板及其制作方法', '显示面板及其制作方法', 'CN109301051B', '本申请提出了一种显示面板及其制作方法，所述制作方法包括：提供一阵列基板；在所述阵列基板上形成第一电极层及像素定义层，所述像素定义层包括至少一第一开口；利用喷墨打印机中的特定喷头，将混合有微发光二极管单元的溶液滴入所述第一开口内，使所述微发光二极管单元形成于所述第一开口内；在所述微发光二极管单元上形成第二电极层；在所述第二电极层上形成封装层。本申请利用喷墨打印机中的特定喷头，将混合有微发光二极管单元的溶液滴入阵列基板上，完成所述微发光二极管单元从母板到阵列基板的转移，降低了所述微发光二极管的转移难度，提高了微发光二极管显示面板的良率。', '本申请提出了一种显示面板及其制作方法，所述制作方法包括：提供一阵列基板；在所述阵列基板上形成第一电极层及像素定义层，所述像素定义层包括至少一第一开口；利用喷墨打印机中的特定喷头，将混合有微发光二极管单元的溶液滴入所述第一开口内，使所述微发光二极管单元形成于所述第一开口内；在所述微发光二极管单元上形成第二电极层；在所述第二电极层上形成封装层。本申请利用喷墨打印机中的特定喷头，将混合有微发光二极管单元的溶液滴入阵列基板上，完成所述微发光二极管单元从母板到阵列基板的转移，降低了所述微发光二极管的转移难度，提高了微发光二极管显示面板的良率。', 'CN201811018646.7', 1535904000, 'CN109301051B', 1574352000, 1548950400, NULL, 1574352000, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 17, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 11, 0, 0, 0, 0, NULL, '911', NULL, '杨子芳', NULL, 'CN103715218A | CN103811523A | CN105870265A | CN107331670A | CN107623076A | CN108269786A', NULL, NULL, 1, '\\20220510\\bcb386a49f944b09a693b8c9c9c4ec24.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40658, 40660, 40659, 3);
INSERT INTO `os_patent` VALUES (23696, '背光模块及液晶显示器', '背光模块及液晶显示器', 'CN109307954A', '本发明公开一种背光模块及液晶显示器。所述背光模块包含：一基板、多个焊盘及一反射图案层。所述多个焊盘散布在所述基板上且各具有一焊盘尺寸。所述反射图案层覆盖所述多个焊盘及所述基板，其中所述反射图案层具有多个开口，所述多个开口的位置对应所述多个焊盘的位置，且所述多个开口各具有一开口尺寸，其中所述开口尺寸小于对应的所述焊盘尺寸。所述背光模块通过在反射图案层设有对应多个焊盘的位置的多个开口，并且所述多个开口的开口尺寸小于所述多个焊盘的焊盘尺寸，进而提升反射图案层占所述基板的比例，故可提升亮度。', '本发明公开一种背光模块及液晶显示器。所述背光模块包含：一基板、多个焊盘及一反射图案层。所述多个焊盘散布在所述基板上且各具有一焊盘尺寸。所述反射图案层覆盖所述多个焊盘及所述基板，其中所述反射图案层具有多个开口，所述多个开口的位置对应所述多个焊盘的位置，且所述多个开口各具有一开口尺寸，其中所述开口尺寸小于对应的所述焊盘尺寸。所述背光模块通过在反射图案层设有对应多个焊盘的位置的多个开口，并且所述多个开口的开口尺寸小于所述多个焊盘的焊盘尺寸，进而提升反射图案层占所述基板的比例，故可提升亮度。', 'CN201811282377.5', 1540915200, 'CN109307954A', 1549296000, 1549296000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 0, 0, 0, 0, 0, NULL, '911', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\2ca7577206c74913a39c5cac9f7fb35d.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40661, 40663, 40662, 4);
INSERT INTO `os_patent` VALUES (23697, '薄型背光模组及其制作方法', '薄型背光模组及其制作方法', 'CN109358450A', '本发明提供一种薄型背光模组及其制作方法，其中薄型背光模组包括驱动基板、多个发光源、荧光层及多个粒子微结构。每一所述发光源阵列布设于所述驱动基板上。所述荧光层表面设置有多个表面微结构，每一所述表面微结构对应每一所述发光源。每一所述粒子微结构对应每一所述表面微结构设置，其中所述粒子微结构与所述表面微结构共同构成散设所述发光源光线的引导层。借此，实现更小的混光距离与达到超薄的背光模组厚度。', '本发明提供一种薄型背光模组及其制作方法，其中薄型背光模组包括驱动基板、多个发光源、荧光层及多个粒子微结构。每一所述发光源阵列布设于所述驱动基板上。所述荧光层表面设置有多个表面微结构，每一所述表面微结构对应每一所述发光源。每一所述粒子微结构对应每一所述表面微结构设置，其中所述粒子微结构与所述表面微结构共同构成散设所述发光源光线的引导层。借此，实现更小的混光距离与达到超薄的背光模组厚度。', 'CN201811430360.X', 1543334400, 'CN109358450A', 1550505600, 1550505600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 0, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 0, 5, 5, 5, 0, NULL, '911', NULL, NULL, NULL, NULL, 'CN110231736A | CN110231736B | CN111128040A | CN111929949A | CN113126362A', NULL, 1, '\\20220510\\2d6d0e3729e544d7ae5cfb6e1abb6ea8.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40664, 40666, 40665, 4);
INSERT INTO `os_patent` VALUES (23698, '背光源的制作方法', '背光源的制作方法', 'CN109491139A', '本发明提供一种背光源的制作方法。本发明的背光源的制作方法在基板上形成多个焊锡图案组，每一焊锡图案组包括间隔的多个焊锡图案，焊锡图案呈封闭的环状，将多个Mini‑LED对应设于多个焊锡图案组上，将基板放入具有变化磁场的空间，多个焊锡图案组中的焊锡图案的回路产生感应电流而迅速产热熔化，将多个Mini‑LED焊接在基板上，提升焊接速度，工艺效率高，工艺成本低，且有效保证了背光源的光效。', '本发明提供一种背光源的制作方法。本发明的背光源的制作方法在基板上形成多个焊锡图案组，每一焊锡图案组包括间隔的多个焊锡图案，焊锡图案呈封闭的环状，将多个Mini‑LED对应设于多个焊锡图案组上，将基板放入具有变化磁场的空间，多个焊锡图案组中的焊锡图案的回路产生感应电流而迅速产热熔化，将多个Mini‑LED焊接在基板上，提升焊接速度，工艺效率高，工艺成本低，且有效保证了背光源的光效。', 'CN201811290147.3', 1540915200, 'CN109491139A', 1552924800, 1552924800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 0, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 9, 6, 6, 6, 0, NULL, '909', NULL, NULL, NULL, 'CN101990365A | CN103415162A | CN106604565A | CN107824953A | CN108288591A | CN108365081A | CN202573248U | CN206519637U | DE202015006503U1', 'CN110139501A | CN110139501B | CN110985902A | CN111276471A | CN112654144A | CN112654144B', NULL, 1, '\\20220510\\fedf80b5b7574d8da46b002b63642430.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40667, 40669, 40668, 4);
INSERT INTO `os_patent` VALUES (23699, '背光模组及采用该背光模组的显示装置', '背光模组及采用该背光模组的显示装置', 'CN109491141A', '本发明提供一种背光模组及采用该背光模组的显示装置。本发明的优点在于，能够有效地优化LED灯影，提升Mini‑LED整体显示效果；在尽量不增加模组厚度，减少模组功耗损失的前提下，优化Mini‑LED灯影问题；在相同厚度下，可实现LED减灯设计，降低中、大尺寸Mini‑LED模组成本。', '本发明提供一种背光模组及采用该背光模组的显示装置。本发明的优点在于，能够有效地优化LED灯影，提升Mini‑LED整体显示效果；在尽量不增加模组厚度，减少模组功耗损失的前提下，优化Mini‑LED灯影问题；在相同厚度下，可实现LED减灯设计，降低中、大尺寸Mini‑LED模组成本。', 'CN201811459548.7', 1543507200, 'CN109491141A', 1552924800, 1552924800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 0, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 4, 1, 1, 1, 0, NULL, '911', NULL, NULL, NULL, 'CN101118341A | CN102902089A | CN107490897A | KR1020130112522A', 'CN110133907A', NULL, 1, '\\20220510\\035a898247f440448e016f71b922e30d.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40670, 40672, 40671, 5);
INSERT INTO `os_patent` VALUES (23700, '背光模组', '背光模组', 'CN109496068B', '本申请提供一种背光模组，包括至少一个灯板结构，每个灯板结构包括第一PCB板、发光元件、第二PCB板和连接器，第一PCB板包括第一子设置面和第二子设置面，所有第二子设置面拼接形成一第二设置面；多个发光元件设置在第一子设置面上；第二PCB板包括第三设置面和第四设置面，第三设置面面向第二设置面，连接器设置在第四设置面上，连接器电性连接于发光元件；其中第三设置面的面积大于第二子设置面的面积。本申请通过将多个第一PCB板焊接在一个第二PCB板上，减少了连接器的数量，进而减少了连接器和驱动模块的连接线数量，进而缩小了后盖的尺寸，使得背光模组未罩设有后盖的区域实现薄型化。', '本申请提供一种背光模组，包括至少一个灯板结构，每个灯板结构包括第一PCB板、发光元件、第二PCB板和连接器，第一PCB板包括第一子设置面和第二子设置面，所有第二子设置面拼接形成一第二设置面；多个发光元件设置在第一子设置面上；第二PCB板包括第三设置面和第四设置面，第三设置面面向第二设置面，连接器设置在第四设置面上，连接器电性连接于发光元件；其中第三设置面的面积大于第二子设置面的面积。本申请通过将多个第一PCB板焊接在一个第二PCB板上，减少了连接器的数量，进而减少了连接器和驱动模块的连接线数量，进而缩小了后盖的尺寸，使得背光模组未罩设有后盖的区域实现薄型化。', 'CN201811306932.3', 1541347200, 'CN109496068B', 1607356800, 1552924800, NULL, 1607356800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 6, 0, 0, 0, 0, NULL, '911', NULL, '李云', NULL, 'CN101632038A | CN104180255A | CN108732822A | CN202262066U | KR1020130027875A | US20160187558A1', NULL, NULL, 1, '\\20220510\\c7284fe8d2a44867b8ec5c6ed20b914f.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40673, 40675, 40674, 2);
INSERT INTO `os_patent` VALUES (23701, '一种面光源芯片及其发光二极管', '一种面光源芯片及其发光二极管', 'CN109545936A', '本发明实施例公开了一种面光源芯片及其发光二极管。面光源芯片包括蓝宝石基板、蓝宝石基板下方的N型GaN缓冲层以及在N型GaN缓冲层下方形成的芯片正极区和芯片负极区，其特征在于，所述芯片正极区从上到下依次包括N型GaN层、MQW发光层、ODR层及芯片正极，所述芯片负极区包括芯片负极。发光二极管包括上述面光源芯片。本发明通过在面光源芯片上采用全角度反射膜层ODR替代布拉格反射膜层DBR，使芯片在出光角度范围内光强分布更加均匀，从整体上提升面光源整面混光均匀性，从而保证面光源在大pitch芯片排布时较好的混光效果和较高的发光效率。', '本发明实施例公开了一种面光源芯片及其发光二极管。面光源芯片包括蓝宝石基板、蓝宝石基板下方的N型GaN缓冲层以及在N型GaN缓冲层下方形成的芯片正极区和芯片负极区，其特征在于，所述芯片正极区从上到下依次包括N型GaN层、MQW发光层、ODR层及芯片正极，所述芯片负极区包括芯片负极。发光二极管包括上述面光源芯片。本发明通过在面光源芯片上采用全角度反射膜层ODR替代布拉格反射膜层DBR，使芯片在出光角度范围内光强分布更加均匀，从整体上提升面光源整面混光均匀性，从而保证面光源在大pitch芯片排布时较好的混光效果和较高的发光效率。', 'CN201811458791.7', 1543507200, 'CN109545936A', 1553788800, 1553788800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 6, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 4, 1, 1, 1, 0, NULL, '911', NULL, NULL, NULL, 'CN102097554A | CN102185061A | CN105789402A | CN1909256A', 'WO2020107782A1', NULL, 1, '\\20220510\\77bcdab7431240a886fb3f19206ef0d1.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40676, 40678, 40677, 3);
INSERT INTO `os_patent` VALUES (23702, '一种柔性直下式背光源及其显示装置', '一种柔性直下式背光源及其显示装置', 'CN109597242B', '本发明提供一种柔性直下式背光源及其显示装置，包括依次设置的石墨烯散热涂层、柔性电路板、迷你发光二极管、气泡胶层、光学膜层以及柔性液晶屏。本发明涉及的一种柔性直下式背光源及其显示装置。通过在光学膜及迷你发光二极管之间设置具有微小气泡的气泡胶层，可以使迷你发光二极管发出的光经过气泡胶层时发生反射，从而可以有效扩散迷你发光二极管发出的光，降低气泡胶层厚度；可提升胶层的隔热特性，增加热阻，降低从背光传递到液晶屏的热量，降低液晶屏温度，提高液晶材料的黏度，减少漏光；可提升背光源的柔韧特性，在弯曲状态下，由于气泡的收缩性好，可以很好的抵消一部分材料弯曲引起的材料变形量，可使背光源满足更大的弯曲曲率。', '本发明提供一种柔性直下式背光源及其显示装置，包括依次设置的石墨烯散热涂层、柔性电路板、迷你发光二极管、气泡胶层、光学膜层以及柔性液晶屏。本发明涉及的一种柔性直下式背光源及其显示装置。通过在光学膜及迷你发光二极管之间设置具有微小气泡的气泡胶层，可以使迷你发光二极管发出的光经过气泡胶层时发生反射，从而可以有效扩散迷你发光二极管发出的光，降低气泡胶层厚度；可提升胶层的隔热特性，增加热阻，降低从背光传递到液晶屏的热量，降低液晶屏温度，提高液晶材料的黏度，减少漏光；可提升背光源的柔韧特性，在弯曲状态下，由于气泡的收缩性好，可以很好的抵消一部分材料弯曲引起的材料变形量，可使背光源满足更大的弯曲曲率。', 'CN201811336445.1', 1541952000, 'CN109597242B', 1603728000, 1554739200, NULL, 1603728000, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 7, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 2, 0, 0, 0, 0, NULL, '911', NULL, '叶翼鹏', NULL, 'CN105974623A | CN107908044A', NULL, NULL, 1, '\\20220510\\d7fd67ffac6441e8b1888549a1dade8f.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40679, 40681, 40680, 3);
INSERT INTO `os_patent` VALUES (23703, '一种反光电路板及其制作方法', '一种反光电路板及其制作方法', 'CN109600910B', '本发明提供一种反光电路板及其制作方法。反光电路板的制作方法包括电路板准备步骤、光刻胶涂覆步骤、光刻胶固化步骤、光刻胶第一去除步骤、镀银步骤、保护层制备步骤及光刻胶第二去除步骤；反光电路板包括电路板及反光层，电路板上设有至少一LED芯片；反光层贴附于所述电路板上除所述LED芯片以外的区域。本发明的技术效果在于，所述反光电路板应用于背光模组后，反光层使电路板上的LED芯片发出部分的光经过背光膜片的反射回到电路板上而不会被电路板吸收，可有效提高背光模组的背光效率、改善背光模组的背光效果。', '本发明提供一种反光电路板及其制作方法。反光电路板的制作方法包括电路板准备步骤、光刻胶涂覆步骤、光刻胶固化步骤、光刻胶第一去除步骤、镀银步骤、保护层制备步骤及光刻胶第二去除步骤；反光电路板包括电路板及反光层，电路板上设有至少一LED芯片；反光层贴附于所述电路板上除所述LED芯片以外的区域。本发明的技术效果在于，所述反光电路板应用于背光模组后，反光层使电路板上的LED芯片发出部分的光经过背光膜片的反射回到电路板上而不会被电路板吸收，可有效提高背光模组的背光效率、改善背光模组的背光效果。', 'CN201811318580.3', 1541520000, 'CN109600910B', 1598889600, 1554739200, NULL, 1598889600, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 8, 0, 0, 0, 0, NULL, '911', NULL, '姚日英', NULL, 'CN102130024A | CN104538514A | CN105206642A | CN105527748A | CN107143758A | CN107443731A | CN201885056U | CN203218332U', NULL, NULL, 1, '\\20220510\\70ba7c4af9dc4a7eab3484686915f731.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 40682, 40684, 40683, 2);
INSERT INTO `os_patent` VALUES (23704, '背光模组及显示装置', '背光模组及显示装置', 'CN109616011B', '本申请提供一种背光模组及显示装置，其包括基板、Mini LED芯片、封框胶和光学膜片结构，Mini LED芯片设置在基板上，Mini LED芯片之间间隔设置，Mini LED芯片包括第一LED芯片、第二LED芯片、第三LED芯片和第四LED芯片，第一LED芯片发红光，第二LED芯片发绿光，第三LED芯片发蓝光，第四LED芯片发黄光；封框胶为透明状，其设置在基板上并覆盖封装Mini LED芯片；光学膜片结构设置在封框胶上。本申请通过第一/第二/第三/第四LED芯片的设置，可通过激发第一/第二/第三/第四LED芯片发光，透过透明的封框胶降低了杂光的产生，进而提高了色彩的饱和度，同时具有色彩饱和度的切换功能。', '本申请提供一种背光模组及显示装置，其包括基板、Mini LED芯片、封框胶和光学膜片结构，Mini LED芯片设置在基板上，Mini LED芯片之间间隔设置，Mini LED芯片包括第一LED芯片、第二LED芯片、第三LED芯片和第四LED芯片，第一LED芯片发红光，第二LED芯片发绿光，第三LED芯片发蓝光，第四LED芯片发黄光；封框胶为透明状，其设置在基板上并覆盖封装Mini LED芯片；光学膜片结构设置在封框胶上。本申请通过第一/第二/第三/第四LED芯片的设置，可通过激发第一/第二/第三/第四LED芯片发光，透过透明的封框胶降低了杂光的产生，进而提高了色彩的饱和度，同时具有色彩饱和度的切换功能。', 'CN201811617722.6', 1545926400, 'CN109616011B', 1602518400, 1554998400, NULL, 1602518400, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 5, 5, NULL, NULL, 1, 0, 0, 0, 0, NULL, '911', NULL, '刘畅', NULL, 'CN205542776U', NULL, NULL, 1, '\\20220510\\c029eaecb2e145f9af82a9e7d4d32f31.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40685, 40687, 40686, 5);
INSERT INTO `os_patent` VALUES (23705, '直下式背光模组及其制作方法', '直下式背光模组及其制作方法', 'CN109633978A', '本发明提供一种直下式背光模组及其制作方法。该直下式背光模组包括：背板以及设于所述背板上的多个灯板单元；所述灯板单元包括电路板、设于所述电路板上表面的多个迷你发光二极管以及设于所述电路板下表面并与多个迷你发光二极管均连接的外部连接端；所述背板面向灯板单元的一侧设有多个背板连接端；所述背板远离灯板单元的一侧设有与多个背板连接端均连接的背板外部连接端以及与所述背板外部连接端连接的驱动电路板；所述多个灯板单元的外部连接端分别与多个背板连接端一一对应连接，可以免除现有直下式背光模组中的连接器，实现直下式背光模组的薄型化。', '本发明提供一种直下式背光模组及其制作方法。该直下式背光模组包括：背板以及设于所述背板上的多个灯板单元；所述灯板单元包括电路板、设于所述电路板上表面的多个迷你发光二极管以及设于所述电路板下表面并与多个迷你发光二极管均连接的外部连接端；所述背板面向灯板单元的一侧设有多个背板连接端；所述背板远离灯板单元的一侧设有与多个背板连接端均连接的背板外部连接端以及与所述背板外部连接端连接的驱动电路板；所述多个灯板单元的外部连接端分别与多个背板连接端一一对应连接，可以免除现有直下式背光模组中的连接器，实现直下式背光模组的薄型化。', 'CN201910024422.5', 1547049600, 'CN109633978A', 1555344000, 1555344000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 4, 4, 4, 4, 0, NULL, '909', NULL, NULL, NULL, 'CN102588840A | CN107561782A | CN108681118A | CN205938774U', 'CN110568660A | CN111540273A | CN111540273B | CN111681537A', NULL, 1, '\\20220510\\64da5a8e1f7644ac9bfb2b9f046471b5.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40688, 40690, 40689, 1);
INSERT INTO `os_patent` VALUES (23706, '发光二极管像素电路及显示面板', '发光二极管像素电路及显示面板', 'CN109637454B', '本发明涉及一种发光二极管像素电路及显示面板。该发光二极管像素电路包括：作为驱动薄膜晶体管的第一薄膜晶体管(T1)，其栅极连接第一节点(G)，源极和漏极分别连接第二节点(S)和电源高电压(OVDD)；作为开关薄膜晶体管的第二薄膜晶体管(T2)，其栅极连接本行像素的扫描信号(SCANn)，源极和漏极分别连接第一节点(G)和数据信号(Vdata)；发光二极管(LED)，其阳极连接第二节点(S)，阴极连接电源低电压(OVSS)；以及第一电容(C1)，第二电容(C2)，和第三薄膜晶体管(T3)。本发明还提供了相应的显示面板。本发明的发光二极管像素电路及显示面板，通过改进像素电路使其能够采用输出电压分辨率较低的源极芯片进行精细的电流控制；改进后的像素电路结构简单，且不需增加驱动信号。', '本发明涉及一种发光二极管像素电路及显示面板。该发光二极管像素电路包括：作为驱动薄膜晶体管的第一薄膜晶体管(T1)，其栅极连接第一节点(G)，源极和漏极分别连接第二节点(S)和电源高电压(OVDD)；作为开关薄膜晶体管的第二薄膜晶体管(T2)，其栅极连接本行像素的扫描信号(SCANn)，源极和漏极分别连接第一节点(G)和数据信号(Vdata)；发光二极管(LED)，其阳极连接第二节点(S)，阴极连接电源低电压(OVSS)；以及第一电容(C1)，第二电容(C2)，和第三薄膜晶体管(T3)。本发明还提供了相应的显示面板。本发明的发光二极管像素电路及显示面板，通过改进像素电路使其能够采用输出电压分辨率较低的源极芯片进行精细的电流控制；改进后的像素电路结构简单，且不需增加驱动信号。', 'CN201811642317.X', 1546012800, 'CN109637454B', 1602518400, 1555344000, NULL, 1602518400, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 9, 0, 0, 0, 0, NULL, '909', NULL, '丁芃', NULL, 'CN101859539A | CN104715725A | CN106157886A | CN106205494A | CN108320700A | CN108806591A | CN1517965A | US20120038605A1 | US20120248435A1', NULL, NULL, 1, '\\20220510\\37b07114cafa4f83b5fcec8b57c47d83.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 40691, 40693, 40692, 2);
INSERT INTO `os_patent` VALUES (23707, '显示器结构及制造方法', '显示器结构及制造方法', 'CN109638178A', '本发明公开一种显示器结构及制造方法。所述显示器制造方法包含步骤：(a)提供一载板，依序形成有一刚性衬底、一可牺牲层及一石墨烯层；(b)形成一柔性衬底于所述载板上；(c)形成一显示器元件层于所述柔性衬底上；及(d)移除所述刚性衬底及所述可牺牲层。本发明通过使用可牺牲层及石墨烯层，从而避免利用激光剥离时破坏显示器的结构，及于制造流程中保护柔性衬底，并增加柔性衬底的弯折能力。', '本发明公开一种显示器结构及制造方法。所述显示器制造方法包含步骤：(a)提供一载板，依序形成有一刚性衬底、一可牺牲层及一石墨烯层；(b)形成一柔性衬底于所述载板上；(c)形成一显示器元件层于所述柔性衬底上；及(d)移除所述刚性衬底及所述可牺牲层。本发明通过使用可牺牲层及石墨烯层，从而避免利用激光剥离时破坏显示器的结构，及于制造流程中保护柔性衬底，并增加柔性衬底的弯折能力。', 'CN201811480988.0', 1543939200, 'CN109638178A', 1555344000, 1555344000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 5, 4, 4, 4, 0, NULL, '911', NULL, NULL, NULL, 'CN104201283A | CN104505467A | CN106356472A | CN108054297A | US20170125136A1', 'CN113012580A | WO2021008083A1 | WO2021082473A1 | WO2022007076A1', NULL, 1, '\\20220510\\51b6f235828e4e97a0df6204f9daa8fc.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40694, 40696, 40695, 4);
INSERT INTO `os_patent` VALUES (23708, '液晶显示面板及显示装置', '液晶显示面板及显示装置', 'CN109683363B', '本发明提供一种液晶显示面板及显示装置，所述液晶显示面板包括阵列基板；彩膜基板，与所述阵列基板对盒设置；背光光源驱动电路，用于驱动背光模组内的背光光源，设置在所述阵列基板上；通过在所述阵列基板上设置背光光源驱动电路，所述背光光源驱动电路和所述背光光源直接连接，所述背光模组内不需要多余的电路板，因此减小了背光模组厚度，缓解了现有的迷你发光二极管背光模组过厚的技术问题，同时使结构简单，降低了成本。', '本发明提供一种液晶显示面板及显示装置，所述液晶显示面板包括阵列基板；彩膜基板，与所述阵列基板对盒设置；背光光源驱动电路，用于驱动背光模组内的背光光源，设置在所述阵列基板上；通过在所述阵列基板上设置背光光源驱动电路，所述背光光源驱动电路和所述背光光源直接连接，所述背光模组内不需要多余的电路板，因此减小了背光模组厚度，缓解了现有的迷你发光二极管背光模组过厚的技术问题，同时使结构简单，降低了成本。', 'CN201910084650.1', 1548691200, 'CN109683363B', 1632412800, 1556208000, NULL, 1632412800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 7, 0, 0, 0, 0, NULL, '911', NULL, '刘志玲', NULL, 'CN101630091A | CN103487968A | CN107728365A | CN108535914A | CN206523723U | JP2007328143A | US10082698B2', NULL, NULL, 1, '\\20220510\\9b7b7ed0a22f461f94350a75271d1663.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 40697, 40699, 40698, 2);
INSERT INTO `os_patent` VALUES (23709, '液晶显示器', '液晶显示器', 'CN109782487A', '本发明提供了一种液晶显示器，包括：一发光二极管(LED)基板；多个次毫米发光二极管(Mini LED)，配置于所述LED基板的一上表面；一薄膜晶体管(TFT)基板，配置于所述LED基板之上；以及一彩膜(CF)基板，配置于所述TFT基板之上。由于Mini LED的尺寸及其节距(pitch)均非常小，以至于每颗光源的照射范也相对小，故可大幅提升LCD产品的对比度。同时，本发明之液晶显示器还具有较小的混光距离设计，使三层基板结构可贴合为一体，大幅降低LCD产品的厚度。', '本发明提供了一种液晶显示器，包括：一发光二极管(LED)基板；多个次毫米发光二极管(Mini LED)，配置于所述LED基板的一上表面；一薄膜晶体管(TFT)基板，配置于所述LED基板之上；以及一彩膜(CF)基板，配置于所述TFT基板之上。由于Mini LED的尺寸及其节距(pitch)均非常小，以至于每颗光源的照射范也相对小，故可大幅提升LCD产品的对比度。同时，本发明之液晶显示器还具有较小的混光距离设计，使三层基板结构可贴合为一体，大幅降低LCD产品的厚度。', 'CN201910123213.6', 1550505600, 'CN109782487A', 1558368000, 1558368000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 6, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 14, 2, 2, 2, 0, NULL, '911', NULL, NULL, NULL, 'CN102402038A | CN105114857A | CN105607328A | CN106164756A | CN106773364A | CN106952578A | CN107026920A | CN107896261A | CN107921737A | CN108445675A | CN109239979A | CN205880427U | CN207833183U | US20180356672A1', 'CN110361891A | US11061274B2', NULL, 1, '\\20220510\\64e0aedfaff440f0aad7e7510ed5fda3.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40700, 40702, 40701, 2);
INSERT INTO `os_patent` VALUES (23710, '有源矩阵微发光二极管显示面板', '有源矩阵微发光二极管显示面板', 'CN109873007B', '本发明公开一种有源矩阵微发光二极管显示面板，包括玻璃基板、平坦层、微发光二极管单元、以及多个电性接合元件。所述玻璃基板的底面作为发光面，并且作为显示区，其中，所述底面的周缘上不设置作为非显示区的边框。所述平坦层与所述玻璃基板相对设置，所述平坦层顶面作为接合面。所述微发光二极管单元设置所述玻璃基板与所述平坦层之间，且所述发光二极管所发出的光线穿出所述发光面。所述多个电性接合元件设置在所述平坦层上。所述显示面板在发光面的周缘外侧不设置任何边框，从而达到无边框显示的效果。', '本发明公开一种有源矩阵微发光二极管显示面板，包括玻璃基板、平坦层、微发光二极管单元、以及多个电性接合元件。所述玻璃基板的底面作为发光面，并且作为显示区，其中，所述底面的周缘上不设置作为非显示区的边框。所述平坦层与所述玻璃基板相对设置，所述平坦层顶面作为接合面。所述微发光二极管单元设置所述玻璃基板与所述平坦层之间，且所述发光二极管所发出的光线穿出所述发光面。所述多个电性接合元件设置在所述平坦层上。所述显示面板在发光面的周缘外侧不设置任何边框，从而达到无边框显示的效果。', 'CN201910261857.1', 1554134400, 'CN109873007B', 1614268800, 1560182400, NULL, 1614268800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 11, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 3, 0, 0, 0, 0, NULL, '911', NULL, '苍凯', NULL, 'CN104701352A | CN107170773A | CN109300932A', NULL, NULL, 1, '\\20220510\\3ba03b1129c34015902e6b279f5b5c0b.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, NULL, 40703, 40705, 40704, 3);
INSERT INTO `os_patent` VALUES (23711, 'MicroLED显示面板', 'MicroLED显示面板', 'CN109979958A', '本揭示提供一种MicroLED显示面板，包括：第一基板、第二基板、驱动电路、MicroLED芯片以及MicroLED量子点发光阵列，其中，驱动电路设置于第二基板上，MicroLED芯片设置于第一基板与第二基板之间，MicroLED芯片包括MicroLED磊晶，MicroLED量子点发光阵列包括至少一凹槽、非凹槽区以及填充于凹槽内的量子点层或散射颗粒，其中，凹槽设置在MicroLED磊晶上且呈阵列排列，非凹槽区设置于相邻两个凹槽之间的MicroLED磊晶上，量子点层包括红色量子点层、绿色量子点层，通过在MicroLED芯片上设置凹槽，再在凹槽中填充量子点，有效地增加了量子点层的厚度，在提升了光效的同时又可保持凹槽形态结构的完整性，可以有效地吸收MicroLED的发光，省去了彩色滤光片层，节省了成本。', '本揭示提供一种MicroLED显示面板，包括：第一基板、第二基板、驱动电路、MicroLED芯片以及MicroLED量子点发光阵列，其中，驱动电路设置于第二基板上，MicroLED芯片设置于第一基板与第二基板之间，MicroLED芯片包括MicroLED磊晶，MicroLED量子点发光阵列包括至少一凹槽、非凹槽区以及填充于凹槽内的量子点层或散射颗粒，其中，凹槽设置在MicroLED磊晶上且呈阵列排列，非凹槽区设置于相邻两个凹槽之间的MicroLED磊晶上，量子点层包括红色量子点层、绿色量子点层，通过在MicroLED芯片上设置凹槽，再在凹槽中填充量子点，有效地增加了量子点层的厚度，在提升了光效的同时又可保持凹槽形态结构的完整性，可以有效地吸收MicroLED的发光，省去了彩色滤光片层，节省了成本。', 'CN201910330035.4', 1555948800, 'CN109979958A', 1562256000, 1562256000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 4, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 3, 15, 15, 15, 0, NULL, '911', NULL, NULL, NULL, 'CN108281456A | CN108987424A | CN109256455A', 'CN110610957A | CN110707121A | CN110783324A | CN110783324B | CN111564121A | CN111564121B | CN111584471A | CN111864092A | CN112420901A | CN112578594A | CN112578597A | CN112768590A | CN112782944A | WO2020215620A1 | WO2021254073A1', NULL, 1, '\\20220510\\fca92e4a227f44599793417faaa44ab0.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40706, 40708, 40707, 2);
INSERT INTO `os_patent` VALUES (23712, '显示面板及显示装置', '显示面板及显示装置', 'CN110034151A', '本发明提供一种显示面板及显示装置，包括透光显示区以及主显示区，所述主显示区围绕所述透光显示区，其中，所述透光显示区设有一透光孔，所述透光孔位于所述基板上方，并由所述主显示区围绕。本发明通过在显示面板的透光显示区设置Micro LED作为透光显示区的显示单元，可以提高透光显示区的亮度，可以解决了现有技术中显示面板寿命变短、摄像头区域亮度异常的问题。', '本发明提供一种显示面板及显示装置，包括透光显示区以及主显示区，所述主显示区围绕所述透光显示区，其中，所述透光显示区设有一透光孔，所述透光孔位于所述基板上方，并由所述主显示区围绕。本发明通过在显示面板的透光显示区设置Micro LED作为透光显示区的显示单元，可以提高透光显示区的亮度，可以解决了现有技术中显示面板寿命变短、摄像头区域亮度异常的问题。', 'CN201910250406.8', 1553788800, 'CN110034151A', 1563465600, 1563465600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 5, 6, 6, 6, 0, NULL, '911', NULL, NULL, NULL, 'CN107293564A | CN108428729A | CN108766990A | CN109300951A | US20190006559A1', 'CN110491909A | CN110491909B | CN110728905A | CN110728905B | WO2021017276A1 | WO2021031399A1', NULL, 1, '\\20220510\\f4ee319c0b0745e783e6e47d565bb9e7.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40709, 40711, 40710, 2);
INSERT INTO `os_patent` VALUES (23713, 'Micro LED器件及显示面板', 'Micro LED器件及显示面板', 'CN110047984A', '本发明提供一种Micro LED器件及显示面板。该Micro LED器件包括：N型层，所述N型层设置在沉积有缓冲层的衬底表面，所述N型层表面覆盖有有源层；P型层，所述P型层表面设置有透明导电层，所述P型层覆盖所述有源层；所述透明导电层的每条边与所述P型层对应的边界之间设置有预设距离，以增大所述Micro LED器件中的电流密度。本发明的Micro LED器件及显示面板将电流集中在器件的中心区域，增大了电流密度，并能够减少Micro LED器件在边缘区域的漏电流、非辐射复合现象，从而提高了Micro LED器件及显示面板的发光效率。', '本发明提供一种Micro LED器件及显示面板。该Micro LED器件包括：N型层，所述N型层设置在沉积有缓冲层的衬底表面，所述N型层表面覆盖有有源层；P型层，所述P型层表面设置有透明导电层，所述P型层覆盖所述有源层；所述透明导电层的每条边与所述P型层对应的边界之间设置有预设距离，以增大所述Micro LED器件中的电流密度。本发明的Micro LED器件及显示面板将电流集中在器件的中心区域，增大了电流密度，并能够减少Micro LED器件在边缘区域的漏电流、非辐射复合现象，从而提高了Micro LED器件及显示面板的发光效率。', 'CN201910282907.4', 1554825600, 'CN110047984A', 1563811200, 1563811200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 7, 9, 9, 9, 0, NULL, '911', NULL, NULL, NULL, 'CN101699637A | CN105552190B | CN106784231A | CN109301077A | CN109599464A | CN110246937A | WO2017171812A1', 'CN111446335A | CN111446335B | CN111564536A | CN111564536B | CN112071260A | CN112397626A | CN112397626B | CN112635452A | WO2022052560A1', NULL, 1, '\\20220510\\d1321a12636d4a8a82258d0e18491c39.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40712, 40714, 40713, 2);
INSERT INTO `os_patent` VALUES (23714, 'Mini-LED背光及其制作方法', 'Mini-LED背光及其制作方法', 'CN110061116B', '本发明涉及一种Mini‑LED背光及其制作方法。该Mini‑LED背光包括：背板以及多个矩形的设有呈阵列排布Mini‑LED的灯板，所述灯板呈阵列排布拼接设置在背板上；相邻灯板之间设有拼缝，并且所述背板设有对应于所述拼缝的凹槽，所述拼缝及凹槽内充满经固化的白胶。本发明还提供了相应的Mini‑LED背光制作方法。本发明的Mini‑LED背光及其制作方法能够有效改善Mini‑LED背光的灯板板间暗线问题。', '本发明涉及一种Mini‑LED背光及其制作方法。该Mini‑LED背光包括：背板以及多个矩形的设有呈阵列排布Mini‑LED的灯板，所述灯板呈阵列排布拼接设置在背板上；相邻灯板之间设有拼缝，并且所述背板设有对应于所述拼缝的凹槽，所述拼缝及凹槽内充满经固化的白胶。本发明还提供了相应的Mini‑LED背光制作方法。本发明的Mini‑LED背光及其制作方法能够有效改善Mini‑LED背光的灯板板间暗线问题。', 'CN201910356996.2', 1556467200, 'CN110061116B', 1603987200, 1564070400, NULL, 1603987200, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 7, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 5, NULL, NULL, 5, 0, 0, 0, 0, NULL, '909', NULL, '马泽宇', NULL, 'CN104851373A | CN109215520A | CN109387981A | CN109613758A | US20020080302A1', NULL, NULL, 1, '\\20220510\\abb6c4c135c544b3a4b58956d183c432.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40715, 40717, 40716, 5);
INSERT INTO `os_patent` VALUES (23715, '一种发光元件及其制作方法、阵列基板', '一种发光元件及其制作方法、阵列基板', 'CN110071198B', '本申请涉及一种发光元件及其制作方法、阵列基板，该发光元件的制作方法包括：提供衬底基板；在衬底基板上制作小于预设尺寸的发光单元；对发光单元的侧面进行去活化处理。通过这种方式，以改善小尺寸微发光二极体芯片的边缘漏电和边缘非辐射复合现象，进而提高发光效率。', '本申请涉及一种发光元件及其制作方法、阵列基板，该发光元件的制作方法包括：提供衬底基板；在衬底基板上制作小于预设尺寸的发光单元；对发光单元的侧面进行去活化处理。通过这种方式，以改善小尺寸微发光二极体芯片的边缘漏电和边缘非辐射复合现象，进而提高发光效率。', 'CN201910307712.0', 1555430400, 'CN110071198B', 1622476800, 1564416000, NULL, 1622476800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 14, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 0, 0, 0, 0, 0, NULL, '911', NULL, '魏芳芳', NULL, NULL, NULL, NULL, 1, '\\20220510\\264dfadf247a41f9b31551a59576a838.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 40718, 40720, 40719, 3);
INSERT INTO `os_patent` VALUES (23716, '显示面板及显示装置', '显示面板及显示装置', 'CN110085164B', '本申请公开了一种显示面板及显示装置，显示面板包括：多个像素单元，多个像素单元阵列排布；多条扫描线，每一扫描线耦接多个像素单元中的一行像素单元，用于输出扫描信号至像素单元；多条数据线，每一数据线耦接多个像素单元中的一列像素单元，用于输出数据信号至像素单元；多条脉冲宽度调制信号线，每一脉冲宽度调制信号线耦接多个像素单元中的一行像素单元，用于输出脉冲宽度调制信号至像素单元并控制像素单元的发光时时以实实显示不同灰阶。通过上述方式，本申请能能够达到低亮度驱驱显示，避免经过发光元件电流过大而造成其亮度过亮的情况发生。', '本申请公开了一种显示面板及显示装置，显示面板包括：多个像素单元，多个像素单元阵列排布；多条扫描线，每一扫描线耦接多个像素单元中的一行像素单元，用于输出扫描信号至像素单元；多条数据线，每一数据线耦接多个像素单元中的一列像素单元，用于输出数据信号至像素单元；多条脉冲宽度调制信号线，每一脉冲宽度调制信号线耦接多个像素单元中的一行像素单元，用于输出脉冲宽度调制信号至像素单元并控制像素单元的发光时时以实实显示不同灰阶。通过上述方式，本申请能能够达到低亮度驱驱显示，避免经过发光元件电流过大而造成其亮度过亮的情况发生。', 'CN201910455990.0', 1559059200, 'CN110085164B', 1604937600, 1564675200, NULL, 1604937600, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 10, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 5, 5, NULL, NULL, 7, 0, 0, 0, 0, NULL, '911', NULL, '陈晨', NULL, 'CN101315744A | CN105575333A | CN108694908A | CN109637449A | CN1575487A | US20060214891A1 | US20130147384A1', NULL, NULL, 1, '\\20220510\\fe8e77bdb94b4a69973ff4fbfa2c05a1.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 40721, 40723, 40722, 5);
INSERT INTO `os_patent` VALUES (23717, '超声波指纹识别模组及包括其的显示面板', '超声波指纹识别模组及包括其的显示面板', 'CN110110612A', '本发明提出一种超声波指纹识别模组及包括其的显示面板。所述超声波指纹识别模组包括：一下电极；一压电材料层，设置在所述下电极上；一上电极，设置在所述压电材料层上；及一散热层，设置成覆盖所述下电极、所述压电材料层与所述上电极的至少一个的侧面。', '本发明提出一种超声波指纹识别模组及包括其的显示面板。所述超声波指纹识别模组包括：一下电极；一压电材料层，设置在所述下电极上；一上电极，设置在所述压电材料层上；及一散热层，设置成覆盖所述下电极、所述压电材料层与所述上电极的至少一个的侧面。', 'CN201910314346.1', 1555516800, 'CN110110612A', 1565280000, 1565280000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 4, 2, 2, 2, 0, NULL, '911', NULL, NULL, NULL, 'CN108388847A | CN109284716A | CN109509773A | US20180373913A1', 'CN111738227A | WO2020211279A1', NULL, 1, '\\20220510\\dc58a79b4fa04769aaeeb8f72c19e5e7.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40724, 40726, 40725, 2);
INSERT INTO `os_patent` VALUES (23718, '微发光二极管显示面板及制备方法', '微发光二极管显示面板及制备方法', 'CN110112141B', '本发明提供一种微发光二极管显示面板及制备方法，该微发光二极管显示面板包括形成薄膜晶体管的有源层、栅绝缘层、栅极、源极和漏极，像素电极、微发光二极管、以及覆盖有源层、栅绝缘层、栅极、源极和漏极的遮光层；在本发明中，遮光层阻挡了微发光二极管所发出的光线照射到薄膜晶体管，减小了微发光二极管发光对薄膜晶体管的影响，降低了微发光二极管照射薄膜晶体管导致的阈值漂移，进而降低了光漏电流。', '本发明提供一种微发光二极管显示面板及制备方法，该微发光二极管显示面板包括形成薄膜晶体管的有源层、栅绝缘层、栅极、源极和漏极，像素电极、微发光二极管、以及覆盖有源层、栅绝缘层、栅极、源极和漏极的遮光层；在本发明中，遮光层阻挡了微发光二极管所发出的光线照射到薄膜晶体管，减小了微发光二极管发光对薄膜晶体管的影响，降低了微发光二极管照射薄膜晶体管导致的阈值漂移，进而降低了光漏电流。', 'CN201910345519.6', 1556208000, 'CN110112141B', 1612195200, 1565280000, NULL, 1612195200, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 24, 5, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 4, 0, 0, 0, 0, NULL, '911', NULL, '赵端', NULL, 'CN106125430A | CN108022550A | CN108183117A | CN109119452A', NULL, NULL, 1, '\\20220510\\8144c47f71264fd5b93b5b9f14eb42ad.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 40727, 40729, 40728, 4);
INSERT INTO `os_patent` VALUES (23719, '显示面板及显示面板的制备方法', '显示面板及显示面板的制备方法', 'CN110112188A', '本揭示提供一种显示面板及显示面板的制备方法，显示面板包括发光层、像素定义层、封装层以及盖板，像素定义层与发光层间隔设置，封装层设置在发光层和像素定义层上，盖板设置在封装层上；还包括辅助电极层，辅助电极层设置在封装层与盖板之间，且辅助电极层设置在显示面板的非开口区域内。辅助电极层在非像素区内形成了加强金属层，从而减小了显示器件内的阴极阻抗，解决了显示面板的压降问题。', '本揭示提供一种显示面板及显示面板的制备方法，显示面板包括发光层、像素定义层、封装层以及盖板，像素定义层与发光层间隔设置，封装层设置在发光层和像素定义层上，盖板设置在封装层上；还包括辅助电极层，辅助电极层设置在封装层与盖板之间，且辅助电极层设置在显示面板的非开口区域内。辅助电极层在非像素区内形成了加强金属层，从而减小了显示器件内的阴极阻抗，解决了显示面板的压降问题。', 'CN201910332984.6', 1556035200, 'CN110112188A', 1565280000, 1565280000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 4, 6, 6, 6, 0, NULL, '911', NULL, NULL, NULL, 'CN106992267A | CN107604306A | CN107731883A | CN109065751A', 'CN110767728A | CN110931653A | CN111725422A | CN112259694A | WO2021035832A1 | WO2021082999A1', NULL, 1, '\\20220510\\82af6a8b49b048ea9a5e97130f2495f1.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40730, 40732, 40731, 2);
INSERT INTO `os_patent` VALUES (23720, '一种显示面板及电子装置', '一种显示面板及电子装置', 'CN110164322A', '本发明提供一种显示面板及电子装置，该显示面板包括：驱动基板；绝缘层，设置有第一容置槽和第二容置槽；第一微型发光二极管，设置在所述第一容置槽内；第二微型发光二极管，设置在所述第二容置槽内，所述第二微型发光二极管的上方设置有第一反射层。本发明的显示面板及电子装置，能够减小显示面板的厚度。', '本发明提供一种显示面板及电子装置，该显示面板包括：驱动基板；绝缘层，设置有第一容置槽和第二容置槽；第一微型发光二极管，设置在所述第一容置槽内；第二微型发光二极管，设置在所述第二容置槽内，所述第二微型发光二极管的上方设置有第一反射层。本发明的显示面板及电子装置，能够减小显示面板的厚度。', 'CN201910429166.8', 1558454400, 'CN110164322A', 1566489600, 1566489600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 7, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 7, 6, 6, 6, 0, NULL, '911', NULL, NULL, NULL, 'CN102044554A | CN106449657A | CN108183178A | CN108257949A | CN109256455A | CN109285858A | US20150001495A1', 'CN111489658A | CN111489658B | CN111613652A | WO2020232982A1 | WO2021213009A1 | WO2021232739A1', NULL, 1, '\\20220510\\590a70e8274c4137ad0bbf328287e5b8.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40733, 40735, 40734, 4);
INSERT INTO `os_patent` VALUES (23721, '一种薄型化灯板及其制作方法', '一种薄型化灯板及其制作方法', 'CN110195829B', '本发明公开了一种薄型化灯板及其制作方法，所述薄型化灯板包括：一灯板，所述灯板的一表面设有多个第一结构体，且所述多个第一结构体均设有一缺口和一容置槽，所述容置槽内设置一光源；以及一膜片，所述膜片与所述灯板相对设置，所述膜片的一表面设有与所述多个缺口相契合的多个第二结构体。通过第一结构体和第二结构体相贴合形成二次透镜，从而实现光扩散，进而实现相同混光高度时，光源数量减少，降低成本，同时实现产品薄型化。', '本发明公开了一种薄型化灯板及其制作方法，所述薄型化灯板包括：一灯板，所述灯板的一表面设有多个第一结构体，且所述多个第一结构体均设有一缺口和一容置槽，所述容置槽内设置一光源；以及一膜片，所述膜片与所述灯板相对设置，所述膜片的一表面设有与所述多个缺口相契合的多个第二结构体。通过第一结构体和第二结构体相贴合形成二次透镜，从而实现光扩散，进而实现相同混光高度时，光源数量减少，降低成本，同时实现产品薄型化。', 'CN201910443900.6', 1558886400, 'CN110195829B', 1597075200, 1567440000, NULL, 1597075200, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 7, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 6, 0, 0, 0, 0, NULL, '911', NULL, '田莉', NULL, 'CN103732983A | CN103917819A | CN107403791A | CN207268383U | CN208652456U | KR1020070082097A', NULL, NULL, 1, '\\20220510\\4f2eb4bb48674b6d94bb203d529b0f11.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40736, 40738, 40737, 3);
INSERT INTO `os_patent` VALUES (23722, '背光结构和显示面板', '背光结构和显示面板', 'CN110208984B', '本申请提供了一种背光结构和显示面板。所述背光结构包括：背光光源；微透镜阵列，所述微透镜阵列位于所述背光光源上方。其中，所述微透镜阵列包括支撑板，所述支撑板包括靠近所述背光光源的第一表面和远离所述背光光源的第二表面，所述第一表面具有多个入光结构，所述第二表面具有多个与所述多个入光结构对应的出光结构，所述多个入光结构和与所述多个入光结构对应的多个出光结构构成多个微透镜结构。其中，所述多个入光结构通过第一模具在所述第一表面上压滚成型，所述多个出光结构通过第二模具在所述第二表面上压滚成型。本申请提供的背光结构具有适用于Mini‑LED的微透镜阵列。', '本申请提供了一种背光结构和显示面板。所述背光结构包括：背光光源；微透镜阵列，所述微透镜阵列位于所述背光光源上方。其中，所述微透镜阵列包括支撑板，所述支撑板包括靠近所述背光光源的第一表面和远离所述背光光源的第二表面，所述第一表面具有多个入光结构，所述第二表面具有多个与所述多个入光结构对应的出光结构，所述多个入光结构和与所述多个入光结构对应的多个出光结构构成多个微透镜结构。其中，所述多个入光结构通过第一模具在所述第一表面上压滚成型，所述多个出光结构通过第二模具在所述第二表面上压滚成型。本申请提供的背光结构具有适用于Mini‑LED的微透镜阵列。', 'CN201910450654.7', 1558972800, 'CN110208984B', 1608825600, 1567699200, NULL, 1608825600, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 7, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 5, 0, 0, 0, 0, NULL, '911', NULL, '王洁', NULL, 'CN101036071A | CN105572790A | CN1632669A | KR2020090011501U | TWI597548B', NULL, NULL, 1, '\\20220510\\c701f1559e884657b5885f8c122c3f83.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40739, 40741, 40740, 4);
INSERT INTO `os_patent` VALUES (23723, 'Micro LED显示面板及显示装置', 'Micro LED显示面板及显示装置', 'CN110211527A', '本申请提供了一种Micro LED显示面板，包括：GOA驱动电路、多条数据线、多条扫描线以及多个像素单元；所述多条扫描线和所述多条数据线纵横交错设置，且相邻两条所述扫描线和相邻两条数据线之间围成像素区以形成多个阵列排布的像素区，每一所述像素区设置有一所述像素单元；所述GOA驱动电路包括多个级联的GOA单元，每一行所述像素区内设置一级GOA单元，其中，第n行扫描线与第n+1行扫描线之间的GOA单元为第n级GOA单元，且所述第n级GOA单元分别与所述第n行扫描线与第n+1行扫描线连接。本申请通过将GOA驱动电路的各个GOA单元分别设置到像素区内，从而减小了边框尺寸，提高了屏占比。', '本申请提供了一种Micro LED显示面板，包括：GOA驱动电路、多条数据线、多条扫描线以及多个像素单元；所述多条扫描线和所述多条数据线纵横交错设置，且相邻两条所述扫描线和相邻两条数据线之间围成像素区以形成多个阵列排布的像素区，每一所述像素区设置有一所述像素单元；所述GOA驱动电路包括多个级联的GOA单元，每一行所述像素区内设置一级GOA单元，其中，第n行扫描线与第n+1行扫描线之间的GOA单元为第n级GOA单元，且所述第n级GOA单元分别与所述第n行扫描线与第n+1行扫描线连接。本申请通过将GOA驱动电路的各个GOA单元分别设置到像素区内，从而减小了边框尺寸，提高了屏占比。', 'CN201910387301.7', 1557417600, 'CN110211527A', 1567699200, 1567699200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 7, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 9, 5, 5, 5, 0, NULL, '911', NULL, NULL, NULL, 'CN104134421A | CN105139806A | CN106023944A | CN107045850A | CN109426041A | CN109427817A | EP1600929A2 | US20150332629A1 | US20160140903A1', 'CN110706599A | CN111413835A | CN111413835B | CN111798765A | WO2020228204A1', NULL, 1, '\\20220510\\39f537c1ad8241a39c02ed60b3b15aeb.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40742, 40744, 40743, 2);
INSERT INTO `os_patent` VALUES (23724, 'Micro-LED芯片的转移方法及Micro-LED显示面板', 'Micro-LED芯片的转移方法及Micro-LED显示面板', 'CN110212079B', '一种Micro‑LED芯片的转移方法及Micro‑LED显示面板，包括：提供一目标基板，所述目标基板的表面设置有多个凹槽结构，在每一所述凹槽结构内形成第一金属电极；提供一种转移头，所述转移头上设置有多个吸头，每一所述吸头的位置与每一所述凹槽结构的位置相对应，将所述转移头通过所述吸头吸取导电胶体；将所述转移头上的每一所述吸头对准与其相对应的所述凹槽结构，释放所述转移头中的所述导电胶体；将多个含有第二金属电极的MicroLED芯片通过转移基板转移至所述目标基板对应的所述凹槽结构上；通过加热方式固化所述导电胶体。', '一种Micro‑LED芯片的转移方法及Micro‑LED显示面板，包括：提供一目标基板，所述目标基板的表面设置有多个凹槽结构，在每一所述凹槽结构内形成第一金属电极；提供一种转移头，所述转移头上设置有多个吸头，每一所述吸头的位置与每一所述凹槽结构的位置相对应，将所述转移头通过所述吸头吸取导电胶体；将所述转移头上的每一所述吸头对准与其相对应的所述凹槽结构，释放所述转移头中的所述导电胶体；将多个含有第二金属电极的MicroLED芯片通过转移基板转移至所述目标基板对应的所述凹槽结构上；通过加热方式固化所述导电胶体。', 'CN201910410441.1', 1558022400, 'CN110212079B', 1607356800, 1567699200, NULL, 1607356800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 6, 0, 0, 0, 0, NULL, '911', NULL, '魏芳芳', NULL, 'CN106373901A | CN107887331A | CN108470526A | CN108538877A | CN109004078A | CN109728022A', NULL, NULL, 1, '\\20220510\\8c1b3b11f6de4403bb66c4b8d8c1d824.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 40745, 40747, 40746, 2);
INSERT INTO `os_patent` VALUES (23725, '车载触摸显示装置', '车载触摸显示装置', 'CN110221469B', '一种车载触摸显示装置，包括背光模组、触摸显示模组及封框胶。所述触摸显示模组设置在所述背光模组上方，所述触摸显示模组包括依次叠设的触摸屏、上偏光膜、液晶层及下偏光膜。所述封框胶结合所述背光模组和所述触摸显示模组。所述封框胶具有凸出于所述背光模组和所述触摸显示模组之间的突出部，所述突出部朝向所述下偏光膜的一侧面上还设置有黏贴胶层。借此，避免灰尘或微粒进入所述触摸显示模组内，从而提升显示效果。', '一种车载触摸显示装置，包括背光模组、触摸显示模组及封框胶。所述触摸显示模组设置在所述背光模组上方，所述触摸显示模组包括依次叠设的触摸屏、上偏光膜、液晶层及下偏光膜。所述封框胶结合所述背光模组和所述触摸显示模组。所述封框胶具有凸出于所述背光模组和所述触摸显示模组之间的突出部，所述突出部朝向所述下偏光膜的一侧面上还设置有黏贴胶层。借此，避免灰尘或微粒进入所述触摸显示模组内，从而提升显示效果。', 'CN201910553055.8', 1561392000, 'CN110221469B', 1614268800, 1568044800, NULL, 1614268800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 6, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 5, NULL, NULL, 6, 0, 0, 0, 0, NULL, '911', NULL, '王洁', NULL, 'CN105938265A | CN107993567A | CN108563058A | CN206710745U | JP1994148632A | JP2006184656A', NULL, NULL, 1, '\\20220510\\7bb742c6503d46feb3639acb4917da83.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40748, 40750, 40749, 5);
INSERT INTO `os_patent` VALUES (23726, 'micro LED芯片及其制备方法', 'micro LED芯片及其制备方法', 'CN110224049A', '本发明提供一种Micro‑LED芯片及其制备方法，其Micro‑LED芯片包括层叠设置的缓冲层、第一半导体层、有源层、第二半导体层、绝缘层、电流扩散层、保护层、以及第一电极和第二电极；其中，绝缘层将第一半导体层、有源层和第二半导体层分隔为至少两个子芯片，且每一子芯片内的第二半导体层，通过电流扩散层与下一子芯片内的第一半导体层连接，第一电极电连接第一子芯片的第一半导体层，第二电极电连接最末子芯片的第二半导体层。通过绝缘层实现了子芯片的分隔，通过电流扩散层实现了子芯片的串联，从而增大了Micro LED的跨压，降低了驱动TFT上的功耗，缓解了现有Micro LED显示器存在驱动TFT功耗严重的问题。', '本发明提供一种Micro‑LED芯片及其制备方法，其Micro‑LED芯片包括层叠设置的缓冲层、第一半导体层、有源层、第二半导体层、绝缘层、电流扩散层、保护层、以及第一电极和第二电极；其中，绝缘层将第一半导体层、有源层和第二半导体层分隔为至少两个子芯片，且每一子芯片内的第二半导体层，通过电流扩散层与下一子芯片内的第一半导体层连接，第一电极电连接第一子芯片的第一半导体层，第二电极电连接最末子芯片的第二半导体层。通过绝缘层实现了子芯片的分隔，通过电流扩散层实现了子芯片的串联，从而增大了Micro LED的跨压，降低了驱动TFT上的功耗，缓解了现有Micro LED显示器存在驱动TFT功耗严重的问题。', 'CN201910466611.8', 1559232000, 'CN110224049A', 1568044800, 1568044800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 5, 4, 4, 4, 0, NULL, '911', NULL, NULL, NULL, 'CN101072464A | CN101118920A | CN101828270A | CN107516701A | US20070090488A1', 'CN110634839A | CN110634839B | US11316069B2 | WO2020238169A1', NULL, 1, '\\20220510\\a70afe907a3443d295001c991bb71f9c.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40751, 40753, 40752, 4);
INSERT INTO `os_patent` VALUES (23727, '显示装置', '显示装置', 'CN110231735A', '本发明提供一种显示装置，包括：背光模块，具有背光区以及透光区；所述显示面板设于所述背光模组上；所述摄像模块设于背光模组下且对应所述透光区。所述背光模块的透光区设置有至少一个MicroLED发光单元，当开启所述背光模块的所述MicroLED发光单元时，所述摄像模块不工作，而在所述显示面板的显示区和透光显示区均能够正常显示画面，从而进入全屏显示状态；当所述摄像模块工作时，关闭所述MicroLED发光单元，所述摄像模块获取足够的成像光线，所述背光区对应的显示面板能够正常显示画面。', '本发明提供一种显示装置，包括：背光模块，具有背光区以及透光区；所述显示面板设于所述背光模组上；所述摄像模块设于背光模组下且对应所述透光区。所述背光模块的透光区设置有至少一个MicroLED发光单元，当开启所述背光模块的所述MicroLED发光单元时，所述摄像模块不工作，而在所述显示面板的显示区和透光显示区均能够正常显示画面，从而进入全屏显示状态；当所述摄像模块工作时，关闭所述MicroLED发光单元，所述摄像模块获取足够的成像光线，所述背光区对应的显示面板能够正常显示画面。', 'CN201910408806.7', 1557936000, 'CN110231735A', 1568304000, 1568304000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 0, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 4, 45, 45, 45, 0, NULL, '911', NULL, NULL, NULL, 'CN108254963A | CN108540603A | CN108666348A | CN208384291U', 'CN110673368A | CN110764309A | CN110764578A | CN110794604A | CN110850635A | CN110865479A | CN110865489A | CN110879496A | CN110908186A | CN110908186B | CN110928075A | CN110969994A | CN110969994B | CN111176018A | CN111208682A | CN111208682B | CN111258101A | CN111308770A | CN111308771A | CN111308782A | CN111352268A | CN111752027A | CN111752027B | CN111885226A | CN111968559A | CN111986602A | CN112198712A | CN112581874A | CN112698529A | US11294227B2 | US11320689B1 | WO2020192370A1 | WO2020192373A1 | WO2020228236A1 | WO2020248631A1 | WO2021103375A1 | WO2021103390A1 | WO2021142894A1 | WO2021159561A1 | WO2021168994A1 | WO2021184434A1 | WO2021208208A1 | WO2021243766A1 | WO2022011816A1 | WO2022036740A1', NULL, 1, '\\20220510\\53221cde7db64e0fbc20ca4439876f86.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40754, 40756, 40755, 3);
INSERT INTO `os_patent` VALUES (23728, '背光结构和显示面板', '背光结构和显示面板', 'CN110231736B', '本申请提供了一种背光结构和显示面板。所述背光结构包括：背光光源，所述背光光源包括多个设置在灯板上的次毫米发光二极管；第一光学膜片，所述第一光学膜片位于所述背光光源上方；第二光学膜片，所述第二光学膜片位于所述第一光学膜片上方；其中，所述第一光学膜片包括靠近所述背光光源的第一表面和远离所述背光光源的第二表面，所述第一表面具有多个第一光扩散结构，所述第二表面具有多个第一支撑反射结构，所述多个第一光扩散结构与所述多个第一支撑反射结构间隔设置；其中，所述多个第一光扩散结构在所述灯板上的投影和所述多个第一支撑反射结构在所述灯板上的投影不重合。本申请提供的背光结构能够优化mini‑LED灯板的混光效果。', '本申请提供了一种背光结构和显示面板。所述背光结构包括：背光光源，所述背光光源包括多个设置在灯板上的次毫米发光二极管；第一光学膜片，所述第一光学膜片位于所述背光光源上方；第二光学膜片，所述第二光学膜片位于所述第一光学膜片上方；其中，所述第一光学膜片包括靠近所述背光光源的第一表面和远离所述背光光源的第二表面，所述第一表面具有多个第一光扩散结构，所述第二表面具有多个第一支撑反射结构，所述多个第一光扩散结构与所述多个第一支撑反射结构间隔设置；其中，所述多个第一光扩散结构在所述灯板上的投影和所述多个第一支撑反射结构在所述灯板上的投影不重合。本申请提供的背光结构能够优化mini‑LED灯板的混光效果。', 'CN201910455356.7', 1559059200, 'CN110231736B', 1602777600, 1568304000, NULL, 1602777600, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 5, 5, NULL, NULL, 5, 0, 0, 0, 0, NULL, '911', NULL, '张城', NULL, 'CN101886764A | CN102287690A | CN109358450A | CN1588201A | CN208013461U', NULL, NULL, 1, '\\20220510\\7dedf2d6ba304d81924ff158700f4d2f.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, NULL, 40757, 40759, 40758, 5);
INSERT INTO `os_patent` VALUES (23729, '微型发光二极管及显示面板', '微型发光二极管及显示面板', 'CN110265531B', '本申请提供一种微型发光二极管(101)及显示面板(300)，所述微型发光二极管(101)，包括：一光转换层(120)，用以将蓝光转化为白光；一黑色矩阵(110)，设置于所述光转换层(120)内；一缓冲层(130)，设置于所述光转换层(120)上；一第一半导体层(140)，设置于所述缓冲层(130)上；一氮化铟镓型层(150)，设置于所述第一半导体层(140)上；一第二半导体层(160)，设置于所述氮化铟镓型层(150)上；一电流散布层(170)，设置于所述第二半导体层(160)上，用以加宽发光面积；一钝化层(180)，设置于所述电流散布层(170)上及所述缓冲层(130)上；一第一垫子(190)；以及一第二垫子(195)。', '本申请提供一种微型发光二极管(101)及显示面板(300)，所述微型发光二极管(101)，包括：一光转换层(120)，用以将蓝光转化为白光；一黑色矩阵(110)，设置于所述光转换层(120)内；一缓冲层(130)，设置于所述光转换层(120)上；一第一半导体层(140)，设置于所述缓冲层(130)上；一氮化铟镓型层(150)，设置于所述第一半导体层(140)上；一第二半导体层(160)，设置于所述氮化铟镓型层(150)上；一电流散布层(170)，设置于所述第二半导体层(160)上，用以加宽发光面积；一钝化层(180)，设置于所述电流散布层(170)上及所述缓冲层(130)上；一第一垫子(190)；以及一第二垫子(195)。', 'CN201910516276.8', 1560441600, 'CN110265531B', 1614268800, 1568908800, NULL, 1614268800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 2, 0, 0, 0, 0, NULL, '911', NULL, '魏芳芳', NULL, 'CN107993583A | CN108899332A', NULL, NULL, 1, '\\20220510\\27b5ace540f6498cb8eda703c43785f1.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 40760, 40762, 40761, 3);
INSERT INTO `os_patent` VALUES (23730, '用于屏下辨识方案的液晶显示设备', '用于屏下辨识方案的液晶显示设备', 'CN110275340A', '本揭示提供了用于屏下辨识方案的液晶显示设备。所述用于屏下辨识方案的液晶显示设备包括：液晶模块、背光模块、屏下传感器及微发光二极管模块。所述微发光二极管模块定义微发光二极管可操作区，且所述微发光二极管可操作区无缝衔接于所述液晶模块的液晶模块可操作区，因而在视觉上没有任何显示中断及不连续边界，可以实现完全的全面屏设计。', '本揭示提供了用于屏下辨识方案的液晶显示设备。所述用于屏下辨识方案的液晶显示设备包括：液晶模块、背光模块、屏下传感器及微发光二极管模块。所述微发光二极管模块定义微发光二极管可操作区，且所述微发光二极管可操作区无缝衔接于所述液晶模块的液晶模块可操作区，因而在视觉上没有任何显示中断及不连续边界，可以实现完全的全面屏设计。', 'CN201910496520.9', 1560096000, 'CN110275340A', 1569254400, 1569254400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 5, 21, 21, 21, 0, NULL, '911', NULL, NULL, NULL, 'CN108986678A | CN109001935A | CN109300951A | CN109618031A | US20180307096A1', 'CN110794604A | CN110955083A | CN111176018A | CN111308782A | CN111638606A | CN111638614A | CN111653585A | CN111708196A | CN112015004A | CN112764261A | EP3885823A4 | US11294227B2 | US11320689B1 | WO2020248467A1 | WO2021103390A1 | WO2021147232A1 | WO2021159561A1 | WO2021184434A1 | WO2021243766A1 | WO2021248783A1 | WO2021253560A1', NULL, 1, '\\20220510\\6d6d5053a60d4224b86e2ccba2b412ed.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40763, 40765, 40764, 4);
INSERT INTO `os_patent` VALUES (23731, '背光模块及其透光率的调控方法', '背光模块及其透光率的调控方法', 'CN110275352B', '本发明提供了一种背光模块及其透光率的调控方法，所述背光模块包括：基板；多个微型发光二极管，间隔配置于所述基板上；聚合物网络液晶层，配置于所述多个微型发光二极管上方，其中，所述聚合物网络液晶层是多层结构或单层结构；以及光学功能层，配置于所述聚合物网络液晶层上方。', '本发明提供了一种背光模块及其透光率的调控方法，所述背光模块包括：基板；多个微型发光二极管，间隔配置于所述基板上；聚合物网络液晶层，配置于所述多个微型发光二极管上方，其中，所述聚合物网络液晶层是多层结构或单层结构；以及光学功能层，配置于所述聚合物网络液晶层上方。', 'CN201910573350.X', 1561651200, 'CN110275352B', 1638460800, 1569254400, NULL, 1638460800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 0, 0, 0, 0, 0, NULL, '911', NULL, '薛冰寒', NULL, NULL, NULL, NULL, 1, '\\20220510\\a03ece5227ea4882b4030429693f8b37.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 40766, 40768, 40767, 4);
INSERT INTO `os_patent` VALUES (23732, '一种GOA单元、GOA电路及显示面板', '一种GOA单元、GOA电路及显示面板', 'CN110322843B', '本发明揭露了一种GOA单元、GOA电路及显示面板，所述GOA单元包括一上拉模块、一上拉维持模块、一反相模块、一下拉维持模块以及一下拉模块，各模块可以采用n型TFT实现；所述GOA单元可以产生显示面板内部补偿所需要的负向脉冲波形，且采用的结构、电路实现方式具有普适性。', '本发明揭露了一种GOA单元、GOA电路及显示面板，所述GOA单元包括一上拉模块、一上拉维持模块、一反相模块、一下拉维持模块以及一下拉模块，各模块可以采用n型TFT实现；所述GOA单元可以产生显示面板内部补偿所需要的负向脉冲波形，且采用的结构、电路实现方式具有普适性。', 'CN201910667553.5', 1563811200, 'CN110322843B', 1597075200, 1570723200, NULL, 1597075200, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 5, 5, NULL, NULL, 6, 0, 0, 0, 0, NULL, '911', NULL, '谢建军', NULL, 'CN103366822A | CN106531120A | CN107799087A | CN108470535A | CN109616068A | US20090207333A1', NULL, NULL, 1, '\\20220510\\90e6e449523a455eaf93ac8427ff09c5.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40769, 40771, 40770, 5);
INSERT INTO `os_patent` VALUES (23733, '一种MicroLED芯片的转移方法', '一种MicroLED芯片的转移方法', 'CN110335845B', '一种MicroLED芯片的转移方法，将ACF胶预先贴合于MicroLED晶圆上，再通过转移MicroLED芯片到TFT基板上，使MicroLED的电极与TFT的电极实现对位，再通过对压头的加热和压力实现，MicroLED的电极与TFT的电极的电性连接。本发明能有效节省ACF胶的使用量，提升ACF材料的利用率，避免材料浪费，避免由于TFT地形不平坦问题导致污染压头的现象。', '一种MicroLED芯片的转移方法，将ACF胶预先贴合于MicroLED晶圆上，再通过转移MicroLED芯片到TFT基板上，使MicroLED的电极与TFT的电极实现对位，再通过对压头的加热和压力实现，MicroLED的电极与TFT的电极的电性连接。本发明能有效节省ACF胶的使用量，提升ACF材料的利用率，避免材料浪费，避免由于TFT地形不平坦问题导致污染压头的现象。', 'CN201910551624.5', 1561305600, 'CN110335845B', 1633017600, 1571068800, NULL, 1633017600, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 7, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 5, 0, 0, 0, 0, NULL, '911', NULL, '周辉辉', NULL, 'CN106486569A | CN107768487A | CN109148341A | US10181507B2 | US10643879B2', NULL, NULL, 1, '\\20220510\\18b7d758a244408d8b667eefb225dae8.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40772, 40774, 40773, 3);
INSERT INTO `os_patent` VALUES (23734, '一种显示基板、其制备方法及其显示装置', '一种显示基板、其制备方法及其显示装置', 'CN110335874B', '本发明提供了一种显示基板，其包括基板层。其中所述基板层上设置有功能层，所述功能层上设置有第一定位层，其中所述第一定位层采用的构成材料包括磁性材料。本发明提供了一种显示基板，其采用新型的磁性定位功能层结构设计，使得其能够与其上设置的其它设有磁性定位层的功能层结构进行自对准操作，从而提升了两者间的对准精度，降低了后续因对准精度不够而可能导致的修复成本；同时，其采用的自对准方式也简化了相应的对准操作。', '本发明提供了一种显示基板，其包括基板层。其中所述基板层上设置有功能层，所述功能层上设置有第一定位层，其中所述第一定位层采用的构成材料包括磁性材料。本发明提供了一种显示基板，其采用新型的磁性定位功能层结构设计，使得其能够与其上设置的其它设有磁性定位层的功能层结构进行自对准操作，从而提升了两者间的对准精度，降低了后续因对准精度不够而可能导致的修复成本；同时，其采用的自对准方式也简化了相应的对准操作。', 'CN201910571150.0', 1561651200, 'CN110335874B', 1617292800, 1571068800, NULL, 1617292800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 3, 0, 0, 0, 0, NULL, '911', NULL, '张思秘', NULL, 'CN106571371A | CN108682312A | US20180301265A1', NULL, NULL, 1, '\\20220510\\67a65efd43f140aa90041bc3e5bb3d2e.png', NULL, NULL, 1, NULL, NULL, 3, NULL, NULL, NULL, 40775, 40777, 40776, 4);
INSERT INTO `os_patent` VALUES (23735, 'Mini LED背光面板、背光模组', 'Mini LED背光面板、背光模组', 'CN110349942B', '本发明提供一种Mini LED背光面板，包括对接设置多个子面板，任意相邻两个子面板的拼接处设置有补光区，所述补光区内填充了荧光粉或者量子点，Mini LED背光面板发光激发补光区材料发光，其次高低发光面采用大小发光角度混排的设计方案，提高了拼接位置上亮度，从而提升Mini LED背光面板发出光的品质，同时有利于背光模组的超薄设计。', '本发明提供一种Mini LED背光面板，包括对接设置多个子面板，任意相邻两个子面板的拼接处设置有补光区，所述补光区内填充了荧光粉或者量子点，Mini LED背光面板发光激发补光区材料发光，其次高低发光面采用大小发光角度混排的设计方案，提高了拼接位置上亮度，从而提升Mini LED背光面板发出光的品质，同时有利于背光模组的超薄设计。', 'CN201910584459.3', 1561910400, 'CN110349942B', 1619452800, 1571328000, NULL, 1619452800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 5, 5, NULL, NULL, 2, 0, 0, 0, 0, NULL, '911', NULL, '赵辉', NULL, 'CN109459886A | CN109613758A', NULL, NULL, 1, '\\20220510\\bc97aeac644e438db19b5145b6e357c0.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40778, 40780, 40779, 5);
INSERT INTO `os_patent` VALUES (23736, '显示面板、显示模组及显示装置', '显示面板、显示模组及显示装置', 'CN110379322A', '本发明提供一种显示面板、显示模组及显示装置，其显示面板包括基板、和Micro‑LED；显示模组通过去除显示面板的柔性驱动电路板上的玻璃基板，在显示面板的显示区内、柔性驱动电路板的一侧贴合支撑板，并将柔性驱动电路板的弯曲区弯曲，绑定区与支撑板的另一侧贴合，实现了显示模组的极窄边框设计；再将若干极窄边框的显示模组设置于显示装置背板形成的容纳腔内，进行固定拼接，达到了Micro‑LED的窄缝拼接技术，突破了Micro‑LED尺寸太小的问题，实现了Micro‑LED大尺寸显示，同时，显示模组能够自由拼接，可以拼接成任意尺寸和分辨率的屏幕。', '本发明提供一种显示面板、显示模组及显示装置，其显示面板包括基板、和Micro‑LED；显示模组通过去除显示面板的柔性驱动电路板上的玻璃基板，在显示面板的显示区内、柔性驱动电路板的一侧贴合支撑板，并将柔性驱动电路板的弯曲区弯曲，绑定区与支撑板的另一侧贴合，实现了显示模组的极窄边框设计；再将若干极窄边框的显示模组设置于显示装置背板形成的容纳腔内，进行固定拼接，达到了Micro‑LED的窄缝拼接技术，突破了Micro‑LED尺寸太小的问题，实现了Micro‑LED大尺寸显示，同时，显示模组能够自由拼接，可以拼接成任意尺寸和分辨率的屏幕。', 'CN201910633685.6', 1563120000, 'CN110379322A', 1571932800, 1571932800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 0, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 18, 21, 21, 21, 0, NULL, '911', NULL, NULL, NULL, 'CN101523469A | CN101523469B | CN102484123A | CN102982744A | CN106782132A | CN107331685A | CN107742480A | CN107833978A | CN108322584A | CN108447407A | CN109148530A | CN109377877A | CN109461827A | CN109494315A | CN109817684A | CN204117519U | CN204884440U | US20140361262A1', 'CN111146189A | CN111312090A | CN111312742A | CN111312742B | CN111384080A | CN111584475A | CN111584475B | CN111951697A | CN111951697B | CN112002251A | CN112086037A | CN113093434A | CN113096547A | CN113160714A | TWI753715B | US11281046B2 | WO2021007998A1 | WO2021087726A1 | WO2021159942A1 | WO2021184446A1 | WO2022062732A1', NULL, 1, '\\20220510\\52a49ebf40554730900306507de0b9b5.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40781, 40783, 40782, 3);
INSERT INTO `os_patent` VALUES (23737, 'TFT驱动背板及Micro-LED显示器', 'TFT驱动背板及Micro-LED显示器', 'CN110400809A', '本发明揭露一种TFT驱动背板及Micro‑LED显示器，通过在衬底基板的侧面以及下方制备用于连接驱动芯片的金属走线层，减少了大尺寸的Micro‑LED应用中面板拼接时的边框；通过在制备金属走线层的同时，在衬底基板的下表面并相对于所述有源层的位置制备用于阻挡环境光的金属光阻挡层，可以在制备薄膜晶体管的时候节省原有的金属遮光层的沉积和图形化步骤，减少了制备TFT驱动背板时的工艺步骤，节约制备成本。', '本发明揭露一种TFT驱动背板及Micro‑LED显示器，通过在衬底基板的侧面以及下方制备用于连接驱动芯片的金属走线层，减少了大尺寸的Micro‑LED应用中面板拼接时的边框；通过在制备金属走线层的同时，在衬底基板的下表面并相对于所述有源层的位置制备用于阻挡环境光的金属光阻挡层，可以在制备薄膜晶体管的时候节省原有的金属遮光层的沉积和图形化步骤，减少了制备TFT驱动背板时的工艺步骤，节约制备成本。', 'CN201910671374.9', 1563897600, 'CN110400809A', 1572537600, 1572537600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 0, 2, 2, 2, 0, NULL, '911', NULL, NULL, NULL, NULL, 'CN110854173A | WO2022057030A1', NULL, 1, '\\20220510\\a983e0f8c0e24cc794e2a7e2a6a5c98b.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40784, 40786, 40785, 3);
INSERT INTO `os_patent` VALUES (23738, '背光模块及其透光率的调控方法', '背光模块及其透光率的调控方法', 'CN110412789B', '本发明提供了一种背光模块，所述背光模块包括：基板；背光源，配置于所述基板上；以及聚合物分散液晶层，配置于所述背光源上方，其中，所述聚合物分散液晶层具有至少两种相异的聚合方向，以缩小斜向视角的出光量与垂直视角的出光量之间的差距。', '本发明提供了一种背光模块，所述背光模块包括：基板；背光源，配置于所述基板上；以及聚合物分散液晶层，配置于所述背光源上方，其中，所述聚合物分散液晶层具有至少两种相异的聚合方向，以缩小斜向视角的出光量与垂直视角的出光量之间的差距。', 'CN201910619864.4', 1562688000, 'CN110412789B', 1598889600, 1572883200, NULL, 1598889600, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 0, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 5, 0, 0, 0, 0, NULL, '911', NULL, '李姝昀', NULL, 'CN101241256A | CN104977758A | CN109164618A | JP2002244106A | US20120287377A1', NULL, NULL, 1, '\\20220510\\2eb05a49adb8470786b311f0e58d61bd.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40787, 40789, 40788, 4);
INSERT INTO `os_patent` VALUES (23739, '一种灯源组件及显示面板', '一种灯源组件及显示面板', 'CN110415617B', '本申请实施例提供一种灯源组件及显示面板，灯源组件包括基板、微型发光二极管，光敏探测器以及微控制器，基板具有相对设置的第一面和第二面，微型发光二极管设置在所述第一面且与所述基板电性连接，光敏探测器位于所述第一面，所述光敏探测器用于检测所微型发光二极管的光强以得到反馈信号，微控制器与所述基板以及所述光敏探测器电性连接，所述微控制接收所述反馈信号以通过所述基板控制所述微型发光二极管。本申请实施例可以提高显示面板的显示效果。', '本申请实施例提供一种灯源组件及显示面板，灯源组件包括基板、微型发光二极管，光敏探测器以及微控制器，基板具有相对设置的第一面和第二面，微型发光二极管设置在所述第一面且与所述基板电性连接，光敏探测器位于所述第一面，所述光敏探测器用于检测所微型发光二极管的光强以得到反馈信号，微控制器与所述基板以及所述光敏探测器电性连接，所述微控制接收所述反馈信号以通过所述基板控制所述微型发光二极管。本申请实施例可以提高显示面板的显示效果。', 'CN201910677852.7', 1563984000, 'CN110415617B', 1614268800, 1572883200, NULL, 1614268800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 6, 0, 0, 0, 0, NULL, '911', NULL, '钟珊', NULL, 'CN101042499A | CN105976725A | CN106997110A | CN107546337A | CN109239980A | CN109891487A', NULL, NULL, 1, '\\20220510\\fad9d2ddecaa484cb911c1136080d461.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 40790, 40792, 40791, 3);
INSERT INTO `os_patent` VALUES (23740, '一种TFT驱动背板及Micro-LED显示器', '一种TFT驱动背板及Micro-LED显示器', 'CN110416225A', '本发明揭露一种TFT驱动背板及Micro‑LED显示器，通过采用高迁移率氧化物薄膜晶体管驱动背板结构，可以实现满足大尺寸Micro‑LED显示需求；采用在衬底基板的下方制备背面金属层，背面金属层包括用于连接驱动芯片的金属走线层，以及用于阻挡环境光的金属光阻挡层，减少了大尺寸的Micro‑LED应用中面板拼接时的边框，且在制备薄膜晶体管的时候可以节省原有的金属遮光层的沉积和图形化步骤，减少了制备TFT驱动背板时的工艺步骤，节约制备成本。', '本发明揭露一种TFT驱动背板及Micro‑LED显示器，通过采用高迁移率氧化物薄膜晶体管驱动背板结构，可以实现满足大尺寸Micro‑LED显示需求；采用在衬底基板的下方制备背面金属层，背面金属层包括用于连接驱动芯片的金属走线层，以及用于阻挡环境光的金属光阻挡层，减少了大尺寸的Micro‑LED应用中面板拼接时的边框，且在制备薄膜晶体管的时候可以节省原有的金属遮光层的沉积和图形化步骤，减少了制备TFT驱动背板时的工艺步骤，节约制备成本。', 'CN201910671388.0', 1563897600, 'CN110416225A', 1572883200, 1572883200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 0, 4, 4, 4, 0, NULL, '911', NULL, NULL, NULL, NULL, 'CN111161641A | CN111161641B | WO2021179417A1 | WO2022057030A1', NULL, 1, '\\20220510\\4c1f657730c342f6acea20a5b6a413e2.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40793, 40795, 40794, 3);
INSERT INTO `os_patent` VALUES (23741, '一种显示面板模组', '一种显示面板模组', 'CN110441958A', '本发明提供了一种显示面板模组，包括显示面板，其定义有摄像头区域。所述显示面板下设置有背光组件，背光组件下设置有一摄像头。其中所述背光组件包括电路背板和间隔设置在其上的光源单元。其中所述背光组件中的所述电路背板在对应所述摄像头区域的位置处，向下倾斜凹陷形成一个上大下小两端开口的中空漏斗形状；其中定义所述中空漏斗形状临近所述显示面板的上开口为第一开孔，临近所述摄像头的下开口为第二开孔。其中从所述显示面板外部入射的光线能够通过所述第一开孔和第二开孔进入到所述摄像头内以供其拍摄使用。本发明提供了一种显示面板模组，其提供了一种新型的屏下摄像解决方案。', '本发明提供了一种显示面板模组，包括显示面板，其定义有摄像头区域。所述显示面板下设置有背光组件，背光组件下设置有一摄像头。其中所述背光组件包括电路背板和间隔设置在其上的光源单元。其中所述背光组件中的所述电路背板在对应所述摄像头区域的位置处，向下倾斜凹陷形成一个上大下小两端开口的中空漏斗形状；其中定义所述中空漏斗形状临近所述显示面板的上开口为第一开孔，临近所述摄像头的下开口为第二开孔。其中从所述显示面板外部入射的光线能够通过所述第一开孔和第二开孔进入到所述摄像头内以供其拍摄使用。本发明提供了一种显示面板模组，其提供了一种新型的屏下摄像解决方案。', 'CN201910602079.8', 1562256000, 'CN110441958A', 1573488000, 1573488000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 9, 1, 1, 1, 0, NULL, '911', NULL, NULL, NULL, 'CN108646452A | CN109215587A | CN109257470A | CN109901327A | CN109946880A | CN208384933U | CN208672966U | CN208672986U | US20070047228A1', 'CN110865479A', NULL, 1, '\\20220510\\cb78959179604f7683c6da7396f4225b.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40796, 40798, 40797, 3);
INSERT INTO `os_patent` VALUES (23742, '显示面板及电子设备', '显示面板及电子设备', 'CN110459563A', '本申请提供一种显示面板及电子设备，通过在显示透光区设置微型发光二极管以使得显示透光区具有高透光率以及高显示亮度的同时，避免显示面板和电子设备出现显示不良的问题。', '本申请提供一种显示面板及电子设备，通过在显示透光区设置微型发光二极管以使得显示透光区具有高透光率以及高显示亮度的同时，避免显示面板和电子设备出现显示不良的问题。', 'CN201910699477.6', 1564502400, 'CN110459563A', 1573747200, 1573747200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 3, 2, 2, 2, 0, NULL, '911', NULL, NULL, NULL, 'CN109817109A | CN109950281A | CN110071160A', 'CN111443765A | WO2021185139A1', NULL, 1, '\\20220510\\b572ae79cd8644bc8ab0cfef0e69fd1d.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40799, 40801, 40800, 3);
INSERT INTO `os_patent` VALUES (23743, '背光模组及其制备方法', '背光模组及其制备方法', 'CN110491866A', '本发明公开了一种背光模组及其制备方法。本发明通过将灯板拼接于补强板上，并采用双面胶固定，然后对背光模组整体进行膜压或流延工艺，使miniLED的荧光膜形成整面结构，以避免光在荧光膜传播中的波导阻断，从而改善拼接暗线。', '本发明公开了一种背光模组及其制备方法。本发明通过将灯板拼接于补强板上，并采用双面胶固定，然后对背光模组整体进行膜压或流延工艺，使miniLED的荧光膜形成整面结构，以避免光在荧光膜传播中的波导阻断，从而改善拼接暗线。', 'CN201910700897.1', 1564502400, 'CN110491866A', 1574352000, 1574352000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 4, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 2, 1, 1, 1, 0, NULL, '911', NULL, NULL, NULL, 'CN109387981A | CN109613758A', 'CN112153825A', NULL, 1, '\\20220510\\b872099ca477418abe3dad5c01c116c4.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40802, 40804, 40803, 3);
INSERT INTO `os_patent` VALUES (23744, '显示面板', '显示面板', 'CN110491909B', '一种显示面板，其上设置有第一显示区域和第二显示区域，显示面板包括第一阵列基板、多个OLED像素单元以及多个Micro LED像素单元，多个OLED像素单元阵列设置于所述第一阵列基板上且设置于所述第一显示区域内，多个Micro LED像素单元阵列设置于所述第二显示区域内，所述Micro LED像素单元包括发光区和透光区。通过将屏下摄像头对应区域的OLED像素替换为Micro LED像素，有利于摄像头采光，从而改善OLED屏下摄像头的成像质量，另外，将用于显示固定画面的OLED像素替换为Micro LED像素，能够改善长时间显示同一画面导致的易烧屏的问题。', '一种显示面板，其上设置有第一显示区域和第二显示区域，显示面板包括第一阵列基板、多个OLED像素单元以及多个Micro LED像素单元，多个OLED像素单元阵列设置于所述第一阵列基板上且设置于所述第一显示区域内，多个Micro LED像素单元阵列设置于所述第二显示区域内，所述Micro LED像素单元包括发光区和透光区。通过将屏下摄像头对应区域的OLED像素替换为Micro LED像素，有利于摄像头采光，从而改善OLED屏下摄像头的成像质量，另外，将用于显示固定画面的OLED像素替换为Micro LED像素，能够改善长时间显示同一画面导致的易烧屏的问题。', 'CN201910691367.5', 1564329600, 'CN110491909B', 1640275200, 1574352000, NULL, 1640275200, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 13, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 11, 0, 0, 0, 0, NULL, '911', NULL, '李卓', NULL, 'CN108878493A | CN108986678A | CN109859646A | CN109859648A | CN109935173A | CN109950288A | CN109979981A | CN110034151A | CN110061014A | US20170154919A1 | US20170179092A1', NULL, NULL, 1, '\\20220510\\0e2a716aa97542cda3f645e6ffff8d6d.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40805, 40807, 40806, 4);
INSERT INTO `os_patent` VALUES (23745, '一种显示装置及其驱动方法', '一种显示装置及其驱动方法', 'CN110568649A', '本发明提供一种显示装置，其包括显示单元和用于驱动显示单元显示的驱动模块；其中，显示单元包括主显示区和至少一个显示透光区，主显示区中设置有多个第一子像素，显示透光区中设置有多个第二子像素；每个第二子像素均包括至少一个微型发光二极管。通过在显示透光区处设置微型发光二极管做透明显示，保证显示透光区的透光率，防止对摄像头等功能器件的采光造成影响的同时，显示透光区也可以用于显示画面，从而使显示单元实现全屏显示，提高用户使用体验。', '本发明提供一种显示装置，其包括显示单元和用于驱动显示单元显示的驱动模块；其中，显示单元包括主显示区和至少一个显示透光区，主显示区中设置有多个第一子像素，显示透光区中设置有多个第二子像素；每个第二子像素均包括至少一个微型发光二极管。通过在显示透光区处设置微型发光二极管做透明显示，保证显示透光区的透光率，防止对摄像头等功能器件的采光造成影响的同时，显示透光区也可以用于显示画面，从而使显示单元实现全屏显示，提高用户使用体验。', 'CN201910851660.3', 1568044800, 'CN110568649A', 1576166400, 1576166400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 16, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 4, 12, 12, 12, 0, NULL, '911', NULL, NULL, NULL, 'CN101543067A | CN108153053A | CN108551505A | CN208384468U', 'CN111208682A | CN111208682B | CN111312161A | CN111312161B | CN111383597A | CN111383597B | CN111405090A | CN111462695A | CN111653585A | CN111833812A | CN111833812B | WO2021253560A1', NULL, 1, '\\20220510\\8b67163f930c4b2fadf236df2d531931.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40808, 40810, 40809, 1);
INSERT INTO `os_patent` VALUES (23746, '显示装置及其制备方法', '显示装置及其制备方法', 'CN110571224B', '本发明公开了一种显示装置及其制备方法，显示装置包括阵列基板，以及像素电极，设于阵列基板上，像素电极具有焊接区和非焊接区，其中像素电极包括透明导电氧化物层，形成于阵列基板上；第一金属电极层设于焊接区和非焊接区的透明导电氧化物层上；第二金属保护层设于非焊接区的第一金属电极层上；Micro LED芯片具有引脚,引脚对应的焊接在焊接区的第一金属电极层上。本发明提供一种显示装置及其制备方法，以解决金属电极层易与后续制程的有机溶剂或有机膜发生反应而出现残留或者缺失等问题，同时，仅保留焊接区的第一金属电极层，以提供Micro LED芯片焊接时的焊接连接点，不影响后续制程。', '本发明公开了一种显示装置及其制备方法，显示装置包括阵列基板，以及像素电极，设于阵列基板上，像素电极具有焊接区和非焊接区，其中像素电极包括透明导电氧化物层，形成于阵列基板上；第一金属电极层设于焊接区和非焊接区的透明导电氧化物层上；第二金属保护层设于非焊接区的第一金属电极层上；Micro LED芯片具有引脚,引脚对应的焊接在焊接区的第一金属电极层上。本发明提供一种显示装置及其制备方法，以解决金属电极层易与后续制程的有机溶剂或有机膜发生反应而出现残留或者缺失等问题，同时，仅保留焊接区的第一金属电极层，以提供Micro LED芯片焊接时的焊接连接点，不影响后续制程。', 'CN201910715570.1', 1564934400, 'CN110571224B', 1640620800, 1576166400, NULL, 1640620800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 13, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 5, 5, NULL, NULL, 9, 0, 0, 0, 0, NULL, '911', NULL, '何贝', NULL, 'CN106876552A | CN106935608A | CN107068707A | CN108269786A | CN108538877A | CN109037239A | CN109782965A | CN109904186A | US20180358343A1', NULL, NULL, 1, '\\20220510\\45d926a7d26841a49fe6d62b59906053.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40811, 40813, 40812, 5);
INSERT INTO `os_patent` VALUES (23747, '显示面板驱动方法和显示装置', '显示面板驱动方法和显示装置', 'CN110580874B', '本发明提供一种显示面板驱动方法和显示装置，该显示面板驱动方法包括获取待驱动子像素的第一驱动灰阶；确定待驱动子像素所处区域，并在待驱动子像素位于拼接区时，调用拼接区补偿系数；根据拼接区补偿系数计算出待驱动子像素的第二驱动灰阶；使用所述第二驱动灰阶驱动待驱动子像素；通过对拼接区的待驱动子像素进行补偿，使得拼接区待驱动子像素正常显示，从而消除了拼接处的显示暗线，缓解了现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题。', '本发明提供一种显示面板驱动方法和显示装置，该显示面板驱动方法包括获取待驱动子像素的第一驱动灰阶；确定待驱动子像素所处区域，并在待驱动子像素位于拼接区时，调用拼接区补偿系数；根据拼接区补偿系数计算出待驱动子像素的第二驱动灰阶；使用所述第二驱动灰阶驱动待驱动子像素；通过对拼接区的待驱动子像素进行补偿，使得拼接区待驱动子像素正常显示，从而消除了拼接处的显示暗线，缓解了现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题。', 'CN201910747304.7', 1565712000, 'CN110580874B', 1614268800, 1576512000, NULL, 1614268800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 5, 5, NULL, NULL, 7, 0, 0, 0, 0, NULL, '911', NULL, '王妍', NULL, 'CN101573742A | CN103578429A | CN104915922A | CN104916256A | CN107742511A | US20090073080A1 | US7336277B1', NULL, NULL, 1, '\\20220510\\ffca4553e68440beb2d4609b858dc8d6.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 40814, 40816, 40815, 5);
INSERT INTO `os_patent` VALUES (23748, '显示装置的驱动方法', '显示装置的驱动方法', 'CN110599948A', '本发明提供一种显示装置的驱动方法。所述显示装置的驱动方法包括如下步骤：步骤S1、提供一显示装置，所述显示装置包括阵列排布的多个子像素；步骤S2、将一帧画面中各个子像素的数据信号划分为多个具有不同时间权重的子场；步骤S3、将所述多个子像素划分为至少两个驱动组，不同驱动组中的子像素对应的子场显示顺序不同；步骤S4、按照各个子像素对应的子场显示顺序驱动各个子像素进行画面显示，通过设置不同驱动组的子像素的子场显示顺序不同，能够减少因数字驱动而导致的画面闪烁，提升产品品质，且无需提升驱动频率，不增加产品成本。', '本发明提供一种显示装置的驱动方法。所述显示装置的驱动方法包括如下步骤：步骤S1、提供一显示装置，所述显示装置包括阵列排布的多个子像素；步骤S2、将一帧画面中各个子像素的数据信号划分为多个具有不同时间权重的子场；步骤S3、将所述多个子像素划分为至少两个驱动组，不同驱动组中的子像素对应的子场显示顺序不同；步骤S4、按照各个子像素对应的子场显示顺序驱动各个子像素进行画面显示，通过设置不同驱动组的子像素的子场显示顺序不同，能够减少因数字驱动而导致的画面闪烁，提升产品品质，且无需提升驱动频率，不增加产品成本。', 'CN201910803978.4', 1566921600, 'CN110599948A', 1576771200, 1576771200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 9, 4, 4, 4, 0, NULL, '909', NULL, NULL, NULL, 'CN101334979A | CN104637449A | CN106097972A | CN106652963A | CN107068048A | CN1545688A | CN1708777A | CN1797508A | WO2017049675A1', 'CN111292688A | CN111292688B | CN111627389A | WO2022027428A1', NULL, 1, '\\20220510\\35906d0c4a544b1a95a73001331b0ee1.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40817, 40819, 40818, 3);
INSERT INTO `os_patent` VALUES (23749, '柔性微发光二极管显示面板及微发光二极管显示装置', '柔性微发光二极管显示面板及微发光二极管显示装置', 'CN110600459A', '一种柔性微发光二极管显示面板及一种微发光二极管显示装置。所述柔性微发光二极管显示面板包括：一支撑板，具有一上表面、一下表面、至少一侧表面及至少一上圆弧倒角，所述至少一侧表面连接所述上表面及所述下表面，所述至少一上圆弧倒角连接所述上表面与所述侧表面；一柔性微发光二极管基板，具有一显示区及至少一边框部，所述显示区设置于所述上表面，并且所述显示区设有多个微发光二极管，所述至少一边框部设置于所述至少一上圆弧倒角及所述侧表面；以及一PCB，与所述边框部电性连接。', '一种柔性微发光二极管显示面板及一种微发光二极管显示装置。所述柔性微发光二极管显示面板包括：一支撑板，具有一上表面、一下表面、至少一侧表面及至少一上圆弧倒角，所述至少一侧表面连接所述上表面及所述下表面，所述至少一上圆弧倒角连接所述上表面与所述侧表面；一柔性微发光二极管基板，具有一显示区及至少一边框部，所述显示区设置于所述上表面，并且所述显示区设有多个微发光二极管，所述至少一边框部设置于所述至少一上圆弧倒角及所述侧表面；以及一PCB，与所述边框部电性连接。', 'CN201910769899.6', 1566230400, 'CN110600459A', 1576771200, 1576771200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 4, 1, 1, 1, 0, NULL, '911', NULL, NULL, NULL, 'CN109212804A | CN110034105A | JP2014132319A | WO2018124507A1', 'WO2021133008A1', NULL, 1, '\\20220510\\c49aeea0f3bc412c99a686102d84a335.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40820, 40822, 40821, 4);
INSERT INTO `os_patent` VALUES (23750, '微型发光二极管的转移方法和显示面板', '微型发光二极管的转移方法和显示面板', 'CN110600590B', '本申请所提供的微型发光二极管的转移方法中，所述方法包括：提供阵列基板，阵列基板具有安装层，安装层设置有若干通孔，通孔用于暴露阵列基板的像素电极，通孔中组装有微型发光二极管，然后，提供第一载板，将异常的微型发光二极管吸附于第一载板，异常的微型发光二极管为电极部朝向通孔的开口部的部分，以及提供第二载板，将异常的微型发光二极管粘附于第二载板的激光形变胶层，再然后，采用激光照射激光形变胶层，翻转异常的微型发光二极管，再提供第三载板，将异常的微型发光二极管转移至第三载板，并将异常的微型发光二极管转移至通孔。提高了微型发光二极管的转移和组装的效率。', '本申请所提供的微型发光二极管的转移方法中，所述方法包括：提供阵列基板，阵列基板具有安装层，安装层设置有若干通孔，通孔用于暴露阵列基板的像素电极，通孔中组装有微型发光二极管，然后，提供第一载板，将异常的微型发光二极管吸附于第一载板，异常的微型发光二极管为电极部朝向通孔的开口部的部分，以及提供第二载板，将异常的微型发光二极管粘附于第二载板的激光形变胶层，再然后，采用激光照射激光形变胶层，翻转异常的微型发光二极管，再提供第三载板，将异常的微型发光二极管转移至第三载板，并将异常的微型发光二极管转移至通孔。提高了微型发光二极管的转移和组装的效率。', 'CN201910913489.4', 1569340800, 'CN110600590B', 1612195200, 1576771200, NULL, 1612195200, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 8, 0, 0, 0, 0, NULL, '911', NULL, '孙大伟', NULL, 'CN107910413A | CN108461438A | CN109065677A | CN109524339A | CN109585342A | CN109950182A | CN110047785A | CN207705223U', NULL, NULL, 1, '\\20220510\\d848637b28324e90abbffe5f3fd1d041.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 40823, 40825, 40824, 3);
INSERT INTO `os_patent` VALUES (23751, '液晶显示屏', '液晶显示屏', 'CN110609416A', '本发明涉及一种液晶显示屏。该液晶显示屏包括液晶显示面板和与其对应装配到一起的微型LED背光单元；该微型LED背光单元包括支架，该支架的底面上设有微型LED灯条，该支架的侧壁上方设有灯条焊盘，所述灯条焊盘分别对应连接至微型LED灯条的分区走线；该液晶显示面板的液晶盒内设有用于电性连接液晶盒内走线的液晶盒焊盘，所述液晶盒焊盘设有与其相连的对应的金属端子，所述金属端子从液晶盒的一侧边缘延伸至液晶盒下表面，所述金属端子与对应的灯条焊盘的位置匹配；当所述液晶显示面板和微型LED背光单元装配到一起时，所述金属端子与对应的灯条焊盘电性连通。本发明的液晶显示屏极大的压缩了微型LED背光单元与液晶显示面板的连通所需的空间。', '本发明涉及一种液晶显示屏。该液晶显示屏包括液晶显示面板和与其对应装配到一起的微型LED背光单元；该微型LED背光单元包括支架，该支架的底面上设有微型LED灯条，该支架的侧壁上方设有灯条焊盘，所述灯条焊盘分别对应连接至微型LED灯条的分区走线；该液晶显示面板的液晶盒内设有用于电性连接液晶盒内走线的液晶盒焊盘，所述液晶盒焊盘设有与其相连的对应的金属端子，所述金属端子从液晶盒的一侧边缘延伸至液晶盒下表面，所述金属端子与对应的灯条焊盘的位置匹配；当所述液晶显示面板和微型LED背光单元装配到一起时，所述金属端子与对应的灯条焊盘电性连通。本发明的液晶显示屏极大的压缩了微型LED背光单元与液晶显示面板的连通所需的空间。', 'CN201910792211.6', 1566748800, 'CN110609416A', 1577116800, 1577116800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 3, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 6, 0, 0, 0, 0, NULL, '909', NULL, NULL, NULL, 'CN108681118A | CN109683363A | CN110133907A | CN202631911U | EP1039216A1 | US20180224682A1', NULL, NULL, 1, '\\20220510\\a027516e3ad446bebbd5153a4d0bdc56.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 40826, 40828, 40827, 2);
INSERT INTO `os_patent` VALUES (23752, '显示装置', '显示装置', 'CN110632789A', '本发明提供一种显示装置，包括背光模块、下偏光片、液晶显示面板、以及上偏光片。所述上偏光片设有一第一通孔，所述下偏光片设有一第二通孔；所述第一通孔与所述第二通孔对应所述显示面板的透明显示区。在所述透明显示区设有若干MicroLED发光单元。本发明显示装置在MicroLED发光单元打开时，所述透明显示区可以实现正常显示，同时在任意时刻可以透过所述透明显示区采集图像进入屏下传感器，同时所述透明显示区与主显示区无缝衔接，因而在视觉上没有任何显示中断及不连续边界，可以实现完全的全面屏设计。', '本发明提供一种显示装置，包括背光模块、下偏光片、液晶显示面板、以及上偏光片。所述上偏光片设有一第一通孔，所述下偏光片设有一第二通孔；所述第一通孔与所述第二通孔对应所述显示面板的透明显示区。在所述透明显示区设有若干MicroLED发光单元。本发明显示装置在MicroLED发光单元打开时，所述透明显示区可以实现正常显示，同时在任意时刻可以透过所述透明显示区采集图像进入屏下传感器，同时所述透明显示区与主显示区无缝衔接，因而在视觉上没有任何显示中断及不连续边界，可以实现完全的全面屏设计。', 'CN201910777076.8', 1566403200, 'CN110632789A', 1577721600, 1577721600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 17, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 6, 13, 13, 13, 0, NULL, '911', NULL, NULL, NULL, 'CN105954932A | CN106896577A | CN108986678A | CN109001935A | CN109300951A | US20150137153A1', 'CN111048005A | CN111176019A | CN111176019B | CN111258101A | CN111477105A | CN111708196A | CN111988456A | CN113296306A | US11048118B1 | US11320689B1 | WO2021184434A1 | WO2021243766A1 | WO2021248783A1', NULL, 1, '\\20220510\\ee37afb4491744c68c4f0ad693dde033.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40829, 40831, 40830, 2);
INSERT INTO `os_patent` VALUES (23753, '一种背光模组、其制备方法及其显示装置', '一种背光模组、其制备方法及其显示装置', 'CN110632790A', '本发明提供了一种背光模组、其制备方法及其显示装置。其中所述背光模组包括外框和设置于所述外框内的第一灯板和第二灯板，其中所述第一灯板和第二灯板是以拼接的方式设置在所述外框的底面上并于两者的相接处形成有一条拼接线。其中所述第一灯板和第二灯板的表面还设置有一层整体设置的白反膜片层，其在所述灯板上设置的LED芯片所在位置设置开口以将所述LED芯片露出，但会将所述灯板的其他表面区域以及所述拼接缝所在位置区域整体覆盖于下，从而有效改善因灯板表面反射率差异而造成的其所在显示装置的显示异常。', '本发明提供了一种背光模组、其制备方法及其显示装置。其中所述背光模组包括外框和设置于所述外框内的第一灯板和第二灯板，其中所述第一灯板和第二灯板是以拼接的方式设置在所述外框的底面上并于两者的相接处形成有一条拼接线。其中所述第一灯板和第二灯板的表面还设置有一层整体设置的白反膜片层，其在所述灯板上设置的LED芯片所在位置设置开口以将所述LED芯片露出，但会将所述灯板的其他表面区域以及所述拼接缝所在位置区域整体覆盖于下，从而有效改善因灯板表面反射率差异而造成的其所在显示装置的显示异常。', 'CN201910787980.7', 1566748800, 'CN110632790A', 1577721600, 1577721600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 6, 1, 1, 1, 0, NULL, '911', NULL, NULL, NULL, 'CN102798060A | CN109656058A | CN201284989Y | CN202835058U | US20120169791A1 | WO2017206366A1', 'WO2021142961A1', NULL, 1, '\\20220510\\b5c4529939e24031ad1f9844787932ad.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40832, 40834, 40833, 1);
INSERT INTO `os_patent` VALUES (23754, '背光模组及车载显示装置', '背光模组及车载显示装置', 'CN110632792A', '本揭示提供一种背光模组及车载显示装置，所述背光模组包括背板；灯板，所述灯板设置于所述背板上；扩散板，所述扩散板设置于所述灯板远离所述背板的一侧上；以及支架层，所述支架层设置于所述灯板与所述扩散板之间，用于支撑所述扩散板，并隔开所述灯板与所述扩散板以形成混光空间，通过调节支架层的高度，可以方便地调节控制扩散板与灯板之间形成的混光空间的距离，从而优化“满天星”灯影的问题，提高背光模组以及车载显示装置的背光显示效果。', '本揭示提供一种背光模组及车载显示装置，所述背光模组包括背板；灯板，所述灯板设置于所述背板上；扩散板，所述扩散板设置于所述灯板远离所述背板的一侧上；以及支架层，所述支架层设置于所述灯板与所述扩散板之间，用于支撑所述扩散板，并隔开所述灯板与所述扩散板以形成混光空间，通过调节支架层的高度，可以方便地调节控制扩散板与灯板之间形成的混光空间的距离，从而优化“满天星”灯影的问题，提高背光模组以及车载显示装置的背光显示效果。', 'CN201910801349.8', 1566921600, 'CN110632792A', 1577721600, 1577721600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 4, NULL, NULL, 4, 4, 4, 4, 0, NULL, '911', NULL, NULL, NULL, 'CN102472913A | CN201788335U | CN201902933U | JP2014207067A', 'CN111176015A | CN111176015B | CN113341613A | WO2021138926A1', NULL, 1, '\\20220510\\00a43c770a4a4f078b93a65e6a92e8cf.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40835, 40837, 40836, 4);
INSERT INTO `os_patent` VALUES (23755, '背光模组', '背光模组', 'CN110673391A', '本发明公开了一种背光模组。本发明在miniLED结构中采用半透膜片层的方式来减弱芯片正视角方向的发光亮度，同时增加芯片之间的发光光强，从而改善miniLED结构的整面的混光均匀性，以制备超薄液晶显示面板的背光模组。', '本发明公开了一种背光模组。本发明在miniLED结构中采用半透膜片层的方式来减弱芯片正视角方向的发光亮度，同时增加芯片之间的发光光强，从而改善miniLED结构的整面的混光均匀性，以制备超薄液晶显示面板的背光模组。', 'CN201910861639.1', 1568217600, 'CN110673391A', 1578585600, 1578585600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 4, 0, 0, 0, 0, NULL, '911', NULL, NULL, NULL, 'CN101203799A | CN107894677A | CN109285469A | CN109410762A', NULL, NULL, 1, '\\20220510\\f999a93b79ab4261941149846894aae0.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40838, 40840, 40839, 3);
INSERT INTO `os_patent` VALUES (23756, '显示面板及显示装置', '显示面板及显示装置', 'CN110673411B', '本发明公开了一种显示面板及显示装置，其包括从下至上依次层叠设置的背光模组、控光液晶盒、准直膜层和显示液晶盒；所述准直膜层能够限制散射态的大角度光线通过。显示装置包括上述显示面板。本发明采用双盒厚液晶显示技术，通过降低控光液晶盒暗态漏光，提升了控光液晶盒透过率，保证了双盒液晶显示器白态亮度，实现了高亮度和高对比度显示，弥补了LCD显示技术相较于OLED显示技术在对比度方面的差异性，并保证了LCD相较于OLED的成本优势。', '本发明公开了一种显示面板及显示装置，其包括从下至上依次层叠设置的背光模组、控光液晶盒、准直膜层和显示液晶盒；所述准直膜层能够限制散射态的大角度光线通过。显示装置包括上述显示面板。本发明采用双盒厚液晶显示技术，通过降低控光液晶盒暗态漏光，提升了控光液晶盒透过率，保证了双盒液晶显示器白态亮度，实现了高亮度和高对比度显示，弥补了LCD显示技术相较于OLED显示技术在对比度方面的差异性，并保证了LCD相较于OLED的成本优势。', 'CN201910852973.0', 1568044800, 'CN110673411B', 1622476800, 1578585600, NULL, 1622476800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 10, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 5, 5, NULL, NULL, 6, 0, 0, 0, 0, NULL, '911', NULL, '俞思敏', NULL, 'CN105572959A | CN106019688A | CN107563318A | CN205176423U | CN205176436U | US7728925B2', NULL, NULL, 1, '\\20220510\\91a37420648e46db8aa52cb52111e5d4.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 40841, 40843, 40842, 5);
INSERT INTO `os_patent` VALUES (23757, '显示装置的制作方法及显示装置', '显示装置的制作方法及显示装置', 'CN110690241B', '本发明提供一种显示装置的制作方法及显示装置。所述显示装置的制作方法包括如下步骤：提供背板，所述背板包括衬底基板及设于所述衬底基板上的驱动电路；形成多个LED芯片；将所述多个LED芯片竖直转移到所述背板上，并使得所述多个LED芯片的底电极与驱动电路电性连接；提供盖板，所述盖板包括本体及设于所述本体上的接地电路；将所述盖板盖合至所述背板上，并使得所述接地电路至少正对所述驱动电路的一部分，且各个LED芯片的顶电极与所述接地电路电性连接；按压所述盖板，使得竖直状态的LED芯片变为倾斜状态，通过对LED芯片的位置的调整，能够提升显示装置分辨率与穿透率，改善显示品质。', '本发明提供一种显示装置的制作方法及显示装置。所述显示装置的制作方法包括如下步骤：提供背板，所述背板包括衬底基板及设于所述衬底基板上的驱动电路；形成多个LED芯片；将所述多个LED芯片竖直转移到所述背板上，并使得所述多个LED芯片的底电极与驱动电路电性连接；提供盖板，所述盖板包括本体及设于所述本体上的接地电路；将所述盖板盖合至所述背板上，并使得所述接地电路至少正对所述驱动电路的一部分，且各个LED芯片的顶电极与所述接地电路电性连接；按压所述盖板，使得竖直状态的LED芯片变为倾斜状态，通过对LED芯片的位置的调整，能够提升显示装置分辨率与穿透率，改善显示品质。', 'CN201910894456.X', 1568908800, 'CN110690241B', 1640620800, 1578931200, NULL, 1640620800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 5, NULL, NULL, 11, 0, 0, 0, 0, NULL, '909', NULL, '方芳', NULL, 'CN104993040A | CN109712968A | CN109782489A | CN110034212A | CN110137327A | CN207586594U | US20080290357A1 | US20110198631A1 | US20130113009A1 | US20190198490A1 | WO2012060255A1', NULL, NULL, 1, '\\20220510\\a3ea3ee4f3564671b943dc98f6b800d1.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40844, 40846, 40845, 5);
INSERT INTO `os_patent` VALUES (23758, '背光模组和显示装置', '背光模组和显示装置', 'CN110703495A', '本发明提供一种背光模组和显示装置，该背光模组包括背板、光源、导光构件、扩散片和棱镜片，所述光源包括拼接设置在所述背板上的第一灯条和第二灯条，所述导光构件设置于所述拼接区域，所述扩散片设置于所述导光构件上，用于使光均匀射出，所述棱镜片设置于所述扩散片上，其中，所述导光构件用于将光源无法传导至拼接区域的扩散片上的光线，传导至拼接区域的扩散片上；通过在拼接区域设置导光构件，使得导光构件将光源无法传导至拼接区域的扩散片上的光线传导至拼接区域的扩散片上，从而使得拼接区域的扩散片上的光线的强度增强，使得拼接区域正常显示，缓解了现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题。', '本发明提供一种背光模组和显示装置，该背光模组包括背板、光源、导光构件、扩散片和棱镜片，所述光源包括拼接设置在所述背板上的第一灯条和第二灯条，所述导光构件设置于所述拼接区域，所述扩散片设置于所述导光构件上，用于使光均匀射出，所述棱镜片设置于所述扩散片上，其中，所述导光构件用于将光源无法传导至拼接区域的扩散片上的光线，传导至拼接区域的扩散片上；通过在拼接区域设置导光构件，使得导光构件将光源无法传导至拼接区域的扩散片上的光线传导至拼接区域的扩散片上，从而使得拼接区域的扩散片上的光线的强度增强，使得拼接区域正常显示，缓解了现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题。', 'CN201910878121.9', 1568649600, 'CN110703495A', 1579190400, 1579190400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 7, 3, 3, 3, 0, NULL, '911', NULL, NULL, NULL, 'CN104299519A | CN104765097A | CN107945664A | CN109613758A | CN109656058A | CN110061116A | EP1895355A2', 'CN112086014A | CN112086014B | CN113327515A', NULL, 1, '\\20220510\\dce2f6057f184f0aa6588cf1c58a86fc.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40847, 40849, 40848, 1);
INSERT INTO `os_patent` VALUES (23759, '发光基板、背光模组及显示面板', '发光基板、背光模组及显示面板', 'CN110703501A', '本申请提供一种发光基板、背光模组及显示面板，所述发光基板包括：阵列基板、发光元件和遮光单元，所述阵列基板包括薄膜晶体管阵列层，所述薄膜晶体管阵列层包括用于驱动发光元件发光的薄膜晶体管；所述发光元件设置在所述阵列基板上，且与所述薄膜晶体管电性连接；所述遮光单元与所述薄膜晶体管的有源层对应设置，所述遮光单元于所述阵列基板所在平面的正投影至少覆盖所述薄膜晶体管的有源层于所述阵列基板所在平面的正投影。本申请通过将遮光单元与有源层对应设置，以遮光单元来遮蔽射向有源层的光线，从而提高了薄膜晶体管器件的性能。', '本申请提供一种发光基板、背光模组及显示面板，所述发光基板包括：阵列基板、发光元件和遮光单元，所述阵列基板包括薄膜晶体管阵列层，所述薄膜晶体管阵列层包括用于驱动发光元件发光的薄膜晶体管；所述发光元件设置在所述阵列基板上，且与所述薄膜晶体管电性连接；所述遮光单元与所述薄膜晶体管的有源层对应设置，所述遮光单元于所述阵列基板所在平面的正投影至少覆盖所述薄膜晶体管的有源层于所述阵列基板所在平面的正投影。本申请通过将遮光单元与有源层对应设置，以遮光单元来遮蔽射向有源层的光线，从而提高了薄膜晶体管器件的性能。', 'CN201911038638.3', 1572278400, 'CN110703501A', 1579190400, 1579190400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 5, 1, 1, 1, 0, NULL, '916', NULL, NULL, NULL, 'CN107422560A | CN109065582A | CN109786421A | CN109859647A | CN110112141A', 'CN112768590A', NULL, 1, '\\20220510\\63a364b27f3a4f549dc162b40ee06df1.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, NULL, 40850, 40852, 40851, 1);
INSERT INTO `os_patent` VALUES (23760, '像素驱动电路及显示装置', '像素驱动电路及显示装置', 'CN110706641B', '本揭示提供一种像素驱动电路及显示装置，所述像素驱动电路包括数据写入单元、驱动单元、补偿单元和发光单元，通过在驱动单元增加第一电容，所述第一电容的第一端用于接收所述电源高压信号，所述第一电容的第二端耦接所述第二节点，通过第一电容对驱动单元的耦合作用，减小在不同灰阶状态下驱动单元的数据传输效率，通过较低的数据传输效率实现高低灰阶的切换，从而提高像素驱动电路高低灰阶的切换能力，同时在发光单元的微发光二极管与驱动单元之间增设第一薄膜晶体管，所述第一薄膜晶体管的栅极耦接发光信号，漏极耦接微发光二极管的第一端，保证微发光二极管在发光之前不会受到驱动单元电流波动的影响，提高显示装置的显示效果。', '本揭示提供一种像素驱动电路及显示装置，所述像素驱动电路包括数据写入单元、驱动单元、补偿单元和发光单元，通过在驱动单元增加第一电容，所述第一电容的第一端用于接收所述电源高压信号，所述第一电容的第二端耦接所述第二节点，通过第一电容对驱动单元的耦合作用，减小在不同灰阶状态下驱动单元的数据传输效率，通过较低的数据传输效率实现高低灰阶的切换，从而提高像素驱动电路高低灰阶的切换能力，同时在发光单元的微发光二极管与驱动单元之间增设第一薄膜晶体管，所述第一薄膜晶体管的栅极耦接发光信号，漏极耦接微发光二极管的第一端，保证微发光二极管在发光之前不会受到驱动单元电流波动的影响，提高显示装置的显示效果。', 'CN201910872967.1', 1568563200, 'CN110706641B', 1625500800, 1579190400, NULL, 1625500800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 10, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 5, 5, NULL, NULL, 0, 0, 0, 0, 0, NULL, '911', NULL, '王妍', NULL, NULL, NULL, NULL, 1, '\\20220510\\03a7a992a3404e1ea193ba023b3c4f91.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 40853, 40855, 40854, 5);
INSERT INTO `os_patent` VALUES (23761, '显示面板', '显示面板', 'CN110707121B', '本发明提供了一种显示面板，包括透明基板，具有显示区以及扇出区，通过将小尺寸的多个MicroLED显示单元阵列式设于所述显示区，用以拼接形成一大尺寸的MicroLED显示面板，并且相邻的MicroLED显示单元的侧壁相互紧密贴附，进而可以实现MicroLED显示单元的无缝拼接，而连接MicroLED显示单元的透明金属线以及扇出走线皆为透明材料，从而使得大尺寸的MicroLED显示面板能够透明显示。并且，本发明大量移植MicroLED发光单元至所述透明基板上，而是通过将小尺寸的多个MicroLED显示单元拼接形成大尺寸的MicroLED显示面板，进而提高了转移的良率以及组装效率。', '本发明提供了一种显示面板，包括透明基板，具有显示区以及扇出区，通过将小尺寸的多个MicroLED显示单元阵列式设于所述显示区，用以拼接形成一大尺寸的MicroLED显示面板，并且相邻的MicroLED显示单元的侧壁相互紧密贴附，进而可以实现MicroLED显示单元的无缝拼接，而连接MicroLED显示单元的透明金属线以及扇出走线皆为透明材料，从而使得大尺寸的MicroLED显示面板能够透明显示。并且，本发明大量移植MicroLED发光单元至所述透明基板上，而是通过将小尺寸的多个MicroLED显示单元拼接形成大尺寸的MicroLED显示面板，进而提高了转移的良率以及组装效率。', 'CN201911049197.7', 1572451200, 'CN110707121B', 1643644800, 1579190400, NULL, 1643644800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 0, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, '王一帆', NULL, NULL, NULL, NULL, 1, '\\20220510\\29c7ca40d984493282e2123d7d3ba7af.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40856, 40858, 40857, 2);
INSERT INTO `os_patent` VALUES (23762, '阵列基板及其制备方法', '阵列基板及其制备方法', 'CN110707198A', '本申请公开了一种阵列基板及阵列基板的制备方法，阵列基板包括：基板，所述基板包括阵列排布的多个像素单元，每一个所述像素单元包括第一电极及第二电极，所述第一电极及所述第二电极之间存在第一间隔；粘接胶，所述粘接胶设置在所述第一间隔处；微型发光二极管，所述微型发光二极管设置在所述第一电极、所述第二电极及所述粘接胶上，可以使微型发光二极管与阵列基板的接触面积增大，避免微型发光二极管在高温高湿或冷热冲击等条件下会更加容易失效，提高产品良率。', '本申请公开了一种阵列基板及阵列基板的制备方法，阵列基板包括：基板，所述基板包括阵列排布的多个像素单元，每一个所述像素单元包括第一电极及第二电极，所述第一电极及所述第二电极之间存在第一间隔；粘接胶，所述粘接胶设置在所述第一间隔处；微型发光二极管，所述微型发光二极管设置在所述第一电极、所述第二电极及所述粘接胶上，可以使微型发光二极管与阵列基板的接触面积增大，避免微型发光二极管在高温高湿或冷热冲击等条件下会更加容易失效，提高产品良率。', 'CN201910892656.1', 1568908800, 'CN110707198A', 1579190400, 1579190400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 10, 1, 1, 1, 0, NULL, '911', NULL, NULL, NULL, 'CN104520398A | CN108336077A | CN109429532A | CN109728022A | CN109791966A | CN110047866A | CN203644815U | TW201919224A | US20190131282A1 | US20190181122A1', 'CN113301718A', NULL, 1, '\\20220510\\a89cfb78b52440019c6331b08ba8a2a3.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40859, 40861, 40860, 4);
INSERT INTO `os_patent` VALUES (23763, '背光模组、显示装置', '背光模组、显示装置', 'CN110716350A', '本发明公开了一种背光模组、显示装置，背光模组包括背板，包括一底板和垂直连接至所述底板的边侧的侧板；反射片，设于所述底板上；导光板，设于所述反射片上，所述导光板朝向所述底板的一面为入光面；miniLED光源，包括一出光面，所述miniLED光源贴覆于所述底板上，且所述miniLED光源的出光面紧贴于所述导光板的入光面。本发明的背光模组、显示装置，通过利用miniLED光源作为新的光源，减小光源的尺寸和混光距离，以进一步减小边框的总宽度，提高显示区的屏占比。', '本发明公开了一种背光模组、显示装置，背光模组包括背板，包括一底板和垂直连接至所述底板的边侧的侧板；反射片，设于所述底板上；导光板，设于所述反射片上，所述导光板朝向所述底板的一面为入光面；miniLED光源，包括一出光面，所述miniLED光源贴覆于所述底板上，且所述miniLED光源的出光面紧贴于所述导光板的入光面。本发明的背光模组、显示装置，通过利用miniLED光源作为新的光源，减小光源的尺寸和混光距离，以进一步减小边框的总宽度，提高显示区的屏占比。', 'CN201911036111.7', 1572278400, 'CN110716350A', 1579536000, 1579536000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 3, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN102980105A | CN107422529A | US20110255024A1', NULL, NULL, 1, '\\20220510\\7fd041cd35e4400caefaea428d4621a4.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40862, 40864, 40863, 1);
INSERT INTO `os_patent` VALUES (23764, '显示装置及显示装置的制作方法', '显示装置及显示装置的制作方法', 'CN110794604A', '本揭示提供一种显示装置及显示装置的制作方法，所述显示装置包括：彩膜基板，包括第一衬底基板和彩色滤光层；阵列基板，包括第二衬底基板、驱动电路层以及显示器件层，所述驱动电路层设置于所述第二衬底基板靠近所述彩膜基板的一侧上，所述显示器件层设置于所述第二衬底基板远离所述彩膜基板的一侧上；液晶层以及传感装置，所述显示器件层包括阵列排布的多个子像素单元和像素驱动电路，所述子像素单元包括微发光二极管，当显示器件层需要显示画面时，微发光二极管自发光实现正常的画面显示，与显示装置的其他显示画面衔接，实现全屏显示的效果；当需要使用传感装置时，传感装置通过显示器件层进行图形采集成像，实现屏下传感的技术效果。', '本揭示提供一种显示装置及显示装置的制作方法，所述显示装置包括：彩膜基板，包括第一衬底基板和彩色滤光层；阵列基板，包括第二衬底基板、驱动电路层以及显示器件层，所述驱动电路层设置于所述第二衬底基板靠近所述彩膜基板的一侧上，所述显示器件层设置于所述第二衬底基板远离所述彩膜基板的一侧上；液晶层以及传感装置，所述显示器件层包括阵列排布的多个子像素单元和像素驱动电路，所述子像素单元包括微发光二极管，当显示器件层需要显示画面时，微发光二极管自发光实现正常的画面显示，与显示装置的其他显示画面衔接，实现全屏显示的效果；当需要使用传感装置时，传感装置通过显示器件层进行图形采集成像，实现屏下传感的技术效果。', 'CN201911198107.0', 1574956800, 'CN110794604A', 1581609600, 1581609600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 12, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 3, 13, 13, 13, 0, NULL, '916', NULL, NULL, NULL, 'CN110231735A | CN110275340A | CN208609032U', 'CN111653585A | CN111708196A | CN112285965A | CN112285965B | CN112951106A | WO2021103390A1 | WO2021164133A1 | WO2021168993A1 | WO2021217676A1 | WO2021243766A1 | WO2021248783A1 | WO2021253560A1 | WO2021258489A1', NULL, 1, '\\20220510\\93cf0afc768d492a9f171cdb89e9bed8.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40865, 40867, 40866, 2);
INSERT INTO `os_patent` VALUES (23765, '背光模组、显示装置', '背光模组、显示装置', 'CN110806656A', '本发明公开了一种背光模组、显示装置，背光模组包括背板，包括一底板和垂直连接至所述底板的边侧的侧板；反射层，设于所述底板上；导光板，设于所述反射层上，所述导光板朝向所述侧板的一面为入光面；miniLED灯板，包括一出光面，所述miniLED灯板贴覆于所述侧板上，且所述miniLED灯板的出光面紧贴于所述导光板的入光面。本发明的背光模组、显示装置，通过利用miniLED光源作为新的光源，减小光源的尺寸和混光距离，以进一步减小边框的总宽度，提高显示区的屏占比。', '本发明公开了一种背光模组、显示装置，背光模组包括背板，包括一底板和垂直连接至所述底板的边侧的侧板；反射层，设于所述底板上；导光板，设于所述反射层上，所述导光板朝向所述侧板的一面为入光面；miniLED灯板，包括一出光面，所述miniLED灯板贴覆于所述侧板上，且所述miniLED灯板的出光面紧贴于所述导光板的入光面。本发明的背光模组、显示装置，通过利用miniLED光源作为新的光源，减小光源的尺寸和混光距离，以进一步减小边框的总宽度，提高显示区的屏占比。', 'CN201911036459.6', 1572278400, 'CN110806656A', 1581955200, 1581955200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 3, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN109616011A | CN208806019U | US20170040306A1', NULL, NULL, 1, '\\20220510\\df52bc40f0d8417b807ec8afd92de5e2.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40868, 40870, 40869, 1);
INSERT INTO `os_patent` VALUES (23766, '一种背光结构及其制作方法，显示装置', '一种背光结构及其制作方法，显示装置', 'CN110824766A', '一种背光结构及其制作方法，显示装置，该背光结构包括设置有多个背光分区的基板、设置在基板一侧且与背光分区对应的分区电路模块、以及设置在基板另一侧且与分区电路模块对应的第一外接引脚和第二外接引脚，分区电路模块与相应的第一外接引脚和第二外接引脚电连接；分区电路模块包括设置在相应的背光分区中的多个发光单元；通过划分多个背光分区，并将背光分区内的各发光单元复合成一分区电路模块，极大的减少了线路布设的复杂度，同时，每一背光分区中各发光单元之间的布线均集成于分区电路模块内，使得线路更加精简，此外，以分区电路模块为单元整体制作，也解决由于数量繁多的miniLED排布过密影响基板进行SMT的问题，简化了基板焊接引脚的制作。', '一种背光结构及其制作方法，显示装置，该背光结构包括设置有多个背光分区的基板、设置在基板一侧且与背光分区对应的分区电路模块、以及设置在基板另一侧且与分区电路模块对应的第一外接引脚和第二外接引脚，分区电路模块与相应的第一外接引脚和第二外接引脚电连接；分区电路模块包括设置在相应的背光分区中的多个发光单元；通过划分多个背光分区，并将背光分区内的各发光单元复合成一分区电路模块，极大的减少了线路布设的复杂度，同时，每一背光分区中各发光单元之间的布线均集成于分区电路模块内，使得线路更加精简，此外，以分区电路模块为单元整体制作，也解决由于数量繁多的miniLED排布过密影响基板进行SMT的问题，简化了基板焊接引脚的制作。', 'CN201911025302.3', 1571932800, 'CN110824766A', 1582214400, 1582214400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 4, 7, 7, 7, 2, NULL, '916', NULL, NULL, NULL, 'CN106980209A | CN109188768A | CN109346016A | JP2004325845A', 'CN111812888A | CN112331137A | CN112331137B | CN113777826A | WO2021248970A1 | WO2022007073A1 | WO2022007077A1', '刘午平等: \"《LED.LCD液晶彩电修理从入门到精通》\", 30 January 2012, 国防工业出版社 | 高鸿锦等: \"《新型显示技术 下》\", 30 August 2014, 北京邮电大学出版社', 1, '\\20220510\\07b26e2c80384da4812ccb586834a78f.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40871, 40873, 40872, 1);
INSERT INTO `os_patent` VALUES (23767, '一种背光模组及显示装置', '一种背光模组及显示装置', 'CN110824778A', '本发明提供一种背光模组及显示装置。所述背光模组包括第一区和设置于所述第一区中的第二区。所述第一区设置有背板。所述背板包括底板和连接所述底板的侧板。所述底板在所述第二区内为通孔。所述侧板环绕所述第二区。本发明通过在所述第二区设置环形柔性电路板以及导光构件。在所述环形柔性电路板的内侧表面上设置光源。所述环形柔性电路板与所述侧板固定连接，减小组装工艺难度，且在导光构件的作用下既可以达到显示的基本功能，又可以使光源的固定工艺简单化。', '本发明提供一种背光模组及显示装置。所述背光模组包括第一区和设置于所述第一区中的第二区。所述第一区设置有背板。所述背板包括底板和连接所述底板的侧板。所述底板在所述第二区内为通孔。所述侧板环绕所述第二区。本发明通过在所述第二区设置环形柔性电路板以及导光构件。在所述环形柔性电路板的内侧表面上设置光源。所述环形柔性电路板与所述侧板固定连接，减小组装工艺难度，且在导光构件的作用下既可以达到显示的基本功能，又可以使光源的固定工艺简单化。', 'CN201911198428.0', 1574956800, 'CN110824778A', 1582214400, 1582214400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 6, 1, 1, 1, 0, NULL, '916', NULL, NULL, NULL, 'CN108897165A | CN110286521A | CN110491290A | CN209089023U | KR1020160057919A | WO2018149025A1', 'CN111999791A', NULL, 1, '\\20220510\\3a04fe48a66a4ceebcb8c31c1158d257.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40874, 40876, 40875, 1);
INSERT INTO `os_patent` VALUES (23768, '一种拼装显示面板和拼装显示面板的制程方法', '一种拼装显示面板和拼装显示面板的制程方法', 'CN110827702A', '本申请实施例中提供一种拼装显示面板和拼装显示面板的制程方法，拼装显示面板包括多个微型显示面板和玻璃基板，多个所述微型显示面板紧密拼接且设置在所述玻璃基板上；其中，所述微型显示面板包括柔性基板、固晶层、密封胶层以及微型发光二极管芯片；所述柔性基板具有相对设置的第一面和第二面，所述第一面具有一有效显示区，所述固晶层黏贴在所述柔性基板的第一面且与所述有效显示区对应，所述密封胶层设置在所述固晶层远离所述柔性基板的一面，所述密封胶层与所述固晶层对应，所述微型发光二极管芯片设置在所述密封胶层远离所述固晶层的一面，所述微型发光二极管芯片与所述有效显示区对应。本申请实施例可以减小拼装显示面板的拼装缝隙。', '本申请实施例中提供一种拼装显示面板和拼装显示面板的制程方法，拼装显示面板包括多个微型显示面板和玻璃基板，多个所述微型显示面板紧密拼接且设置在所述玻璃基板上；其中，所述微型显示面板包括柔性基板、固晶层、密封胶层以及微型发光二极管芯片；所述柔性基板具有相对设置的第一面和第二面，所述第一面具有一有效显示区，所述固晶层黏贴在所述柔性基板的第一面且与所述有效显示区对应，所述密封胶层设置在所述固晶层远离所述柔性基板的一面，所述密封胶层与所述固晶层对应，所述微型发光二极管芯片设置在所述密封胶层远离所述固晶层的一面，所述微型发光二极管芯片与所述有效显示区对应。本申请实施例可以减小拼装显示面板的拼装缝隙。', 'CN201911035309.3', 1572278400, 'CN110827702A', 1582214400, 1582214400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 4, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 6, 3, 3, 3, 0, NULL, '916', NULL, NULL, NULL, 'CN102484123A | CN102568321A | CN103346234A | CN105044959A | CN109841663A | US20020074082A1', 'CN111402755A | CN113112925A | CN113112925B', NULL, 1, '\\20220510\\bcf7b165784c4c1a8a0b165a6f365565.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40877, 40879, 40878, 1);
INSERT INTO `os_patent` VALUES (23769, '绑定材料、显示面板及Micro-LED芯片的绑定方法', '绑定材料、显示面板及Micro-LED芯片的绑定方法', 'CN110831347A', '本发明提供一种绑定材料、显示面板及Micro‑LED芯片的绑定方法，其显示面板包括：显示基板，显示基板上设置有驱动电路和触点，触点与驱动电路电连接；Micro‑LED芯片，Micro‑LED芯片上设置有接触电极；绑定材料，用于连接触点与接触电极，并将Micro‑LED芯片绑定在显示基板上；其中，绑定材料为导电热固化材料。通过导电热固化材料来实现Micro‑LED芯片在显示基板上的绑定，利用导电热固化材料的导电性，实现了Micro‑LED芯片和驱动电路的电连接，利用导电热固化材料固化的不可逆性，避免了在高温环境下或大功率LED器件中，由于绑定材料的熔融，而导致Micro‑LED芯片与驱动电路的接触变差，或Micro‑LED芯片与驱动电极触点位置发生偏移的问题，从而改善了显示面板的性能。', '本发明提供一种绑定材料、显示面板及Micro‑LED芯片的绑定方法，其显示面板包括：显示基板，显示基板上设置有驱动电路和触点，触点与驱动电路电连接；Micro‑LED芯片，Micro‑LED芯片上设置有接触电极；绑定材料，用于连接触点与接触电极，并将Micro‑LED芯片绑定在显示基板上；其中，绑定材料为导电热固化材料。通过导电热固化材料来实现Micro‑LED芯片在显示基板上的绑定，利用导电热固化材料的导电性，实现了Micro‑LED芯片和驱动电路的电连接，利用导电热固化材料固化的不可逆性，避免了在高温环境下或大功率LED器件中，由于绑定材料的熔融，而导致Micro‑LED芯片与驱动电路的接触变差，或Micro‑LED芯片与驱动电极触点位置发生偏移的问题，从而改善了显示面板的性能。', 'CN201911012953.9', 1571760000, 'CN110831347A', 1582214400, 1582214400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 5, 1, 1, 1, 0, NULL, '916', NULL, NULL, NULL, 'CN101033379A | CN101918505A | CN103849327A | CN108493154A | CN1293467A', 'CN111462648A', NULL, 1, '\\20220510\\146b41147afd424ea9b6449e00956b22.png', NULL, NULL, 1, NULL, NULL, 15, NULL, NULL, NULL, 40880, 40882, 40881, 1);
INSERT INTO `os_patent` VALUES (23770, '显示面板和显示装置', '显示面板和显示装置', 'CN110853572A', '本发明提供一种显示面板和显示装置，该显示面板通过将驱动电路层的驱动电路划分为第一部分、第二部分和连接部分，使得第一部分位于基板的一侧，第二部分位于基板的另一侧，且使得第二部分在基板上的投影区域位于第一部分在基板上的投影区域内，从而使得第二部分位于显示区域内，从而消除了无法显示的外部引线连接区域，消除了显示面板的边框，从而解决了现有LED显示屏存在外部引线区域较大，导致边框较大的技术问题。', '本发明提供一种显示面板和显示装置，该显示面板通过将驱动电路层的驱动电路划分为第一部分、第二部分和连接部分，使得第一部分位于基板的一侧，第二部分位于基板的另一侧，且使得第二部分在基板上的投影区域位于第一部分在基板上的投影区域内，从而使得第二部分位于显示区域内，从而消除了无法显示的外部引线连接区域，消除了显示面板的边框，从而解决了现有LED显示屏存在外部引线区域较大，导致边框较大的技术问题。', 'CN201911180488.X', 1574784000, 'CN110853572A', 1582819200, 1582819200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 17, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 12, 3, 1, 1, 0, NULL, '916', NULL, NULL, NULL, 'CN105870159A | CN106371658A | CN106653777A | CN109377877A | CN109671352A | CN110221472A | CN110262701A | CN110297346A | CN110323231A | CN110379314A | CN209199067U | US20170103693A1', 'CN110782799A | CN110782799B | CN112086037A', NULL, 1, '\\20220510\\53f1ea45f00a4866afdd165d3ba42130.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40883, 40885, 40884, 3);
INSERT INTO `os_patent` VALUES (23771, '显示面板的电压调节方法及存储介质', '显示面板的电压调节方法及存储介质', 'CN110853575B', '本发明提供了一种显示面板的电压调节方法及存储介质，对每个显示区域的电压值进行补偿，通过在测试步骤中两次测试得到不同Vgs的比值作为本发明的调整因子，进而可以得到不同显示区域相同的补偿电压，可以对G点和S点的电压差得到一补偿，减小对输出步骤的影响；并再次根据第二调整步骤，通过输入的补偿电压检测得到电流，通过电流公式计算得到每个显示区域k的比值，再次通过电流公式对TFT阈值进行调整，使得每个显示区域的电流相同。', '本发明提供了一种显示面板的电压调节方法及存储介质，对每个显示区域的电压值进行补偿，通过在测试步骤中两次测试得到不同Vgs的比值作为本发明的调整因子，进而可以得到不同显示区域相同的补偿电压，可以对G点和S点的电压差得到一补偿，减小对输出步骤的影响；并再次根据第二调整步骤，通过输入的补偿电压检测得到电流，通过电流公式计算得到每个显示区域k的比值，再次通过电流公式对TFT阈值进行调整，使得每个显示区域的电流相同。', 'CN201911064319.X', 1572796800, 'CN110853575B', 1625500800, 1582819200, NULL, 1625500800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 14, 0, 0, 0, 0, NULL, '916', NULL, '王鑫', NULL, 'CN103594059A | CN104871233A | CN105976764A | CN108630148A | CN108877686A | CN109147665A | CN109300443A | CN109584798A | CN109584805A | CN109727578A | US20090093687A1 | US20140139499A1 | US20150145844A1 | US20180267595A1', NULL, NULL, 1, '\\20220510\\4cb3b5d2fc6345d297ce6c38b217c8e6.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 40886, 40888, 40887, 4);
INSERT INTO `os_patent` VALUES (23772, '一种显示面板', '一种显示面板', 'CN110854151A', '本申请公开了一种显示面板，包括驱动基板以及依次设置在所述驱动基板上的导热层、绑定层和LED芯片；所述导热层上设有镂空部；所述绑定层填充在所述镂空部中，并与所述驱动基板电连接；所述LED芯片设置在所述绑定层上，并通过所述绑定层与所述驱动基板电连接。本申请提供的导热层在不影响LED芯片绑定效果的前提下可以及时的将LED芯片产生的热量传导出来，降低了器件老化速度，提高了显示面板的使用寿命，并且本申请提供的显示面板可适用于大功率Micro‑LED显示装置。', '本申请公开了一种显示面板，包括驱动基板以及依次设置在所述驱动基板上的导热层、绑定层和LED芯片；所述导热层上设有镂空部；所述绑定层填充在所述镂空部中，并与所述驱动基板电连接；所述LED芯片设置在所述绑定层上，并通过所述绑定层与所述驱动基板电连接。本申请提供的导热层在不影响LED芯片绑定效果的前提下可以及时的将LED芯片产生的热量传导出来，降低了器件老化速度，提高了显示面板的使用寿命，并且本申请提供的显示面板可适用于大功率Micro‑LED显示装置。', 'CN201911023872.9', 1571932800, 'CN110854151A', 1582819200, 1582819200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 3, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 4, 2, 2, 2, 0, NULL, '916', NULL, NULL, NULL, 'CN102208512A | CN106025048A | CN109300931A | US20110233587A1', 'CN111599834A | WO2021238517A1', NULL, 1, '\\20220510\\c0a26526765d4eb9a0517d17282bc0e9.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40889, 40891, 40890, 2);
INSERT INTO `os_patent` VALUES (23773, '一种封装结构、封装结构制程方法及显示面板', '一种封装结构、封装结构制程方法及显示面板', 'CN110854152A', '本申请实施例提供一种封装结构、封装结构制程方法及显示面板，该封装结构包括：阵列基板，所述阵列基板包括相对设置第一面和第二面；微型发光二极管，所述微型发光二极管设置在所述第一面且所述微型发光二极管对应有效显示区；贴合胶材，所述贴合胶材设置在所述第一面和所述微型发光二极管上；封装胶材，所述封装胶材覆盖所述第一面、所述微型发光二极管以及所述贴合胶材。在切割过程中，该贴合胶材可作为保护胶材以防止切割工艺造成对阵列基板的损害并能提高显示面板的封装工艺精度。', '本申请实施例提供一种封装结构、封装结构制程方法及显示面板，该封装结构包括：阵列基板，所述阵列基板包括相对设置第一面和第二面；微型发光二极管，所述微型发光二极管设置在所述第一面且所述微型发光二极管对应有效显示区；贴合胶材，所述贴合胶材设置在所述第一面和所述微型发光二极管上；封装胶材，所述封装胶材覆盖所述第一面、所述微型发光二极管以及所述贴合胶材。在切割过程中，该贴合胶材可作为保护胶材以防止切割工艺造成对阵列基板的损害并能提高显示面板的封装工艺精度。', 'CN201911036248.2', 1572278400, 'CN110854152A', 1582819200, 1582819200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 20, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\73647f3f5c504ab1aaca6e690950a081.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40892, 40894, 40893, 1);
INSERT INTO `os_patent` VALUES (23774, '背光结构及显示装置', '背光结构及显示装置', 'CN110865489A', '本发明提供一种背光结构及显示装置，通过在背光结构透光孔的周围设置MiniLed发光单元，并且在MiniLed发光单元之间设置指纹感光芯片，可以实现在透光孔周围实现指纹识别。本发明提供的显示装置，需要开启显示功能时，异形区利用MiniLed发光单元作为背光源，加之上方液晶盒调光和透光孔上方聚光导光环可实现异形区域的简单画面显示。需要开启拍照功能时，MiniLed发光单元关闭，液晶盒呈透明态使摄像头进光拍照。需要开启指纹解锁功能时，上方液晶盒呈透明态，根据指纹感光芯片可识别的可见光波段(红光、绿光或蓝光)开启相应的单色MiniLed(红色发光单元、绿色发光单元以及蓝色发光单元)，解锁成功后单色MiniLed关闭并正常开启异形区显示功能。', '本发明提供一种背光结构及显示装置，通过在背光结构透光孔的周围设置MiniLed发光单元，并且在MiniLed发光单元之间设置指纹感光芯片，可以实现在透光孔周围实现指纹识别。本发明提供的显示装置，需要开启显示功能时，异形区利用MiniLed发光单元作为背光源，加之上方液晶盒调光和透光孔上方聚光导光环可实现异形区域的简单画面显示。需要开启拍照功能时，MiniLed发光单元关闭，液晶盒呈透明态使摄像头进光拍照。需要开启指纹解锁功能时，上方液晶盒呈透明态，根据指纹感光芯片可识别的可见光波段(红光、绿光或蓝光)开启相应的单色MiniLed(红色发光单元、绿色发光单元以及蓝色发光单元)，解锁成功后单色MiniLed关闭并正常开启异形区显示功能。', 'CN201911202422.6', 1574956800, 'CN110865489A', 1583424000, 1583424000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 8, 2, 2, 2, 0, NULL, '916', NULL, NULL, NULL, 'CN108427228A | CN108983470A | CN109521605A | CN109901327A | CN110231735A | CN110471211A | CN208384291U | US20190363277A1', 'CN111679478A | CN113744641A', NULL, 1, '\\20220510\\8ef6a1426b8948038fafa9e02209cbac.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40895, 40897, 40896, 1);
INSERT INTO `os_patent` VALUES (23775, '屏下指纹识别装置、显示面板及显示装置', '屏下指纹识别装置、显示面板及显示装置', 'CN110866456A', '本发明提供一种屏下指纹识别装置、显示面板及显示装置，本发明通过在像素开口区加入控光膜，用以区分指纹识别光线和正常显示光线，并且将图像传感器设置为仅识别不可见光源，如此设计使得不可见光只能通过设置于小孔层内的小孔传递至所述图像传感器，从而提高指纹识别信号的信噪比。', '本发明提供一种屏下指纹识别装置、显示面板及显示装置，本发明通过在像素开口区加入控光膜，用以区分指纹识别光线和正常显示光线，并且将图像传感器设置为仅识别不可见光源，如此设计使得不可见光只能通过设置于小孔层内的小孔传递至所述图像传感器，从而提高指纹识别信号的信噪比。', 'CN201911028326.4', 1572192000, 'CN110866456A', 1583424000, 1583424000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 7, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 9, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'AU2017101188A4 | CN102043272A | CN102576164A | CN107609538A | CN107657231A | CN107832749A | CN108242453A | CN109144311A | CN109993141A', NULL, NULL, 1, '\\20220510\\c7204b57c82f4395ba7a2c8cddb80285.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40898, 40900, 40899, 3);
INSERT INTO `os_patent` VALUES (23776, '一种显示面板及显示装置', '一种显示面板及显示装置', 'CN110867462A', '本揭示提供一种显示面板及显示装置。显示面板包括驱动背板、驱动电路、第一电极层、微型LED、第二电极层及绑定层。所述驱动电路上的第一电极层设置有第一凸起结构，所述微型LED下的第二电极层设置有第二凸起结构。所述绑定层设置于所述第一电极层和所述第二电极层之间。本揭示通过增大绑定层与第一电极层或与第二电极层的接触面积，缓解了微型LED脱落的问题。', '本揭示提供一种显示面板及显示装置。显示面板包括驱动背板、驱动电路、第一电极层、微型LED、第二电极层及绑定层。所述驱动电路上的第一电极层设置有第一凸起结构，所述微型LED下的第二电极层设置有第二凸起结构。所述绑定层设置于所述第一电极层和所述第二电极层之间。本揭示通过增大绑定层与第一电极层或与第二电极层的接触面积，缓解了微型LED脱落的问题。', 'CN201911043628.9', 1572364800, 'CN110867462A', 1583424000, 1583424000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 11, 4, 4, 4, 0, NULL, '916', NULL, NULL, NULL, 'CN101150156A | CN101779255A | CN103941460A | CN107490905A | CN108323215A | CN109216426A | CN110085740A | CN110197814A | CN110246945A | JP1995183339A', 'CN111524905A | CN111525016A | WO2021196898A1 | WO2021217700A1', NULL, 1, '\\20220510\\f8c268b1c614439db287b1e57b74f494.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40901, 40903, 40902, 2);
INSERT INTO `os_patent` VALUES (23777, '背光模组及液晶显示装置', '背光模组及液晶显示装置', 'CN110879496A', '本申请公开了一种背光模组，所述背光模组具有盲孔区域以及围绕所述盲孔区域的背光区域，所述盲孔区域内开设有盲孔，所述盲孔区域内还包括背板、第一固定胶、环形Mini‑LED灯带以及玻璃盖板；其中，所述第一固定胶，设置于所述盲孔两侧的盲孔侧壁上，所述环形Mini‑LED灯带，设置于所述盲孔内并通过所述第一固定胶粘接于所述盲孔侧壁上，所述玻璃盖板与所述环形Mini‑LED灯带的上表面相接触；所述盲孔内还设置有调光玻璃，所述调光玻璃的两端分别与所述环形Mini‑LED灯带的下表面接触，且分别通过所述第一固定胶粘接于所述盲孔侧壁上。本申请还公开了一种使用所述背光模组制备的液晶显示装置。', '本申请公开了一种背光模组，所述背光模组具有盲孔区域以及围绕所述盲孔区域的背光区域，所述盲孔区域内开设有盲孔，所述盲孔区域内还包括背板、第一固定胶、环形Mini‑LED灯带以及玻璃盖板；其中，所述第一固定胶，设置于所述盲孔两侧的盲孔侧壁上，所述环形Mini‑LED灯带，设置于所述盲孔内并通过所述第一固定胶粘接于所述盲孔侧壁上，所述玻璃盖板与所述环形Mini‑LED灯带的上表面相接触；所述盲孔内还设置有调光玻璃，所述调光玻璃的两端分别与所述环形Mini‑LED灯带的下表面接触，且分别通过所述第一固定胶粘接于所述盲孔侧壁上。本申请还公开了一种使用所述背光模组制备的液晶显示装置。', 'CN201911192649.7', 1574870400, 'CN110879496A', 1584028800, 1584028800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 5, 2, 1, 1, 0, NULL, '916', NULL, NULL, NULL, 'CN110231735A | CN110456571A | CN208421470U | CN209690555U | JP2005017437A', 'CN112698529A | WO2020192370A1', NULL, 1, '\\20220510\\2efd17111b7a4e8dbdd03b1879733f2e.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40904, 40906, 40905, 1);
INSERT INTO `os_patent` VALUES (23778, '背光模组及显示装置', '背光模组及显示装置', 'CN110908186B', '本发明提供一种背光模组及显示装置，所述背光模组包括基板、反射片、导光板、扩散膜、反射层、透明膜层、背光源，本发明将基板拼接于反射片处，并且在基板与反射片的拼接处，由于反射层的高反射性，所以反射层可以有效的代替反射片的功能，进而保证了光的延展性，降低对组装精度的要求。另外在拼接处可以采用所述白光发光单元，利用MiniLED可以单独控制的特性实现不同位置MiniLED发光强弱差异，进而解决拼接处的黑边以及暗边现象，可以更好的实现全面屏幕显示，从而补偿所述背光模组因为挖孔而发光不均的现象。', '本发明提供一种背光模组及显示装置，所述背光模组包括基板、反射片、导光板、扩散膜、反射层、透明膜层、背光源，本发明将基板拼接于反射片处，并且在基板与反射片的拼接处，由于反射层的高反射性，所以反射层可以有效的代替反射片的功能，进而保证了光的延展性，降低对组装精度的要求。另外在拼接处可以采用所述白光发光单元，利用MiniLED可以单独控制的特性实现不同位置MiniLED发光强弱差异，进而解决拼接处的黑边以及暗边现象，可以更好的实现全面屏幕显示，从而补偿所述背光模组因为挖孔而发光不均的现象。', 'CN201911169777.X', 1574697600, 'CN110908186B', 1633622400, 1584979200, NULL, 1633622400, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 7, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 9, 0, 0, 0, 0, NULL, '916', NULL, '李国斌', NULL, 'CN108469704A | CN108957845A | CN109709711A | CN109901327A | CN110161749A | CN110187559A | CN110231735A | CN207264062U | JP2010008837A', NULL, NULL, 1, '\\20220510\\604b68c2295b42d290114de5eeedbb4b.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40907, 40909, 40908, 3);
INSERT INTO `os_patent` VALUES (23779, '透明显示面板和电子设备', '透明显示面板和电子设备', 'CN110928043A', '本申请提供了一种透明显示面板和电子设备。所述透明显示面板包括：第一透明基板、与所述第一透明基板相对设置的第二透明基板、设置第一透明基板下方的背光模组、设置在所述第一透明基板和第二透明基板之间的液晶层；其中所述液晶层为聚合物分散液晶层；所述背光模组包括侧光源，所述测光源包括多个彩色背光单元。', '本申请提供了一种透明显示面板和电子设备。所述透明显示面板包括：第一透明基板、与所述第一透明基板相对设置的第二透明基板、设置第一透明基板下方的背光模组、设置在所述第一透明基板和第二透明基板之间的液晶层；其中所述液晶层为聚合物分散液晶层；所述背光模组包括侧光源，所述测光源包括多个彩色背光单元。', 'CN201911177187.1', 1574697600, 'CN110928043A', 1585238400, 1585238400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 10, 1, 1, 1, 0, NULL, '916', NULL, NULL, NULL, 'CN101281317A | CN102742343A | CN103293744A | CN105954933A | CN106292030A | CN107229157A | CN107479219A | CN108628024A | CN207337002U | WO2018049292A1', 'WO2022033238A1', NULL, 1, '\\20220510\\438650b8f3ce487799ec00054bfed762.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40910, 40912, 40911, 4);
INSERT INTO `os_patent` VALUES (23780, 'mini-LED背光模组及液晶显示面板', 'mini-LED背光模组及液晶显示面板', 'CN110930953A', '本申请实施例提供了一种mini‑LED背光模组，包括：一背板；多个LED发光单元，多个LED发光单元设置于所述背板上且呈矩形阵列分布；多个开关管，每一所述开关管的输入端接入驱动电压信号，控制端接入扫描电压信号，输出端与至少一个所述LED发光单元的输入端连接；多个光阀开关，其设置于所述多个发光单元上方，每一所述光阀开关分别与一所述LED发光单元相对以用于调节对应所述LED发光单元的发光面积；驱动控制模块，其用于控制输出扫描信号给每一所述开关管的控制端以及输出光栅控制信号给所述光阀开关，进而通过控制所述开关管的占空比以及与所述开关管所对应的LED发光单元的发光面积来调节所述LED发光单元的灰阶。本发明具有实现更多等级的灰阶控制的有益效果。', '本申请实施例提供了一种mini‑LED背光模组，包括：一背板；多个LED发光单元，多个LED发光单元设置于所述背板上且呈矩形阵列分布；多个开关管，每一所述开关管的输入端接入驱动电压信号，控制端接入扫描电压信号，输出端与至少一个所述LED发光单元的输入端连接；多个光阀开关，其设置于所述多个发光单元上方，每一所述光阀开关分别与一所述LED发光单元相对以用于调节对应所述LED发光单元的发光面积；驱动控制模块，其用于控制输出扫描信号给每一所述开关管的控制端以及输出光栅控制信号给所述光阀开关，进而通过控制所述开关管的占空比以及与所述开关管所对应的LED发光单元的发光面积来调节所述LED发光单元的灰阶。本发明具有实现更多等级的灰阶控制的有益效果。', 'CN201911159216.1', 1574352000, 'CN110930953A', 1585238400, 1585238400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 9, 5, 5, 5, 0, NULL, '916', NULL, NULL, NULL, 'CN101230957A | CN102279463A | CN102918579A | CN103380394A | CN104503141A | CN106324897A | CN110264964A | JP2008047430A | US7221498B2', 'CN112599103A | CN112599103B | CN113674623A | WO2021223268A1 | WO2022027726A1', NULL, 1, '\\20220510\\c614f655039e4f6289ad57fddddb3115.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40913, 40915, 40914, 1);
INSERT INTO `os_patent` VALUES (23781, '一种显示装置及其驱动方法', '一种显示装置及其驱动方法', 'CN110969994B', '本发明提供一种显示装置及其驱动方法，该显示面板包括：显示屏，包括透光区域和显示区域；背光模块，其上设置有区域控制组件，所述区域控制组件的位置与所述透光区域的位置对应，所述区域控制组件包括三色灯和导光件；所述导光件设于所述三色灯的上方。本发明的显示装置及其驱动方法，能够提高显示效果。', '本发明提供一种显示装置及其驱动方法，该显示面板包括：显示屏，包括透光区域和显示区域；背光模块，其上设置有区域控制组件，所述区域控制组件的位置与所述透光区域的位置对应，所述区域控制组件包括三色灯和导光件；所述导光件设于所述三色灯的上方。本发明的显示装置及其驱动方法，能够提高显示效果。', 'CN201911222833.1', 1575302400, 'CN110969994B', 1633622400, 1586188800, NULL, 1633622400, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 9, 5, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 10, 0, 0, 0, 0, NULL, '916', NULL, '杜昕', NULL, 'CN106603772A | CN108376019A | CN108551505A | CN108803146A | CN109901327A | CN110231735A | CN208384291U | CN208386636U | KR102041637B1 | US20060077279A1', NULL, NULL, 1, '\\20220510\\0e6486e0eb1d45dca2412f747b53ee36.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 40916, 40918, 40917, 2);
INSERT INTO `os_patent` VALUES (23782, '显示装置及显示装置的制作方法', '显示装置及显示装置的制作方法', 'CN110992841A', '本揭示提供一种显示装置及显示装置的制作方法，所述显示装置包括：阵列基板和微发光二极管器件，所述微发光二极管器件阵列排布于所述阵列基板上，所述微发光二极管器件远离所述阵列基板一侧的表面设有多个向所述微发光二极管器件内部凹陷的微腔结构，通过设置于微发光二极管器件上的量子点膜层填充进微腔结构，将量子点分散到微发光二极管器件表面上的各个微腔结构中，防止量子点的聚集，同时又将量子点限制在微发光二极管器件内部，包含有量子点的多个微腔结构可以增强微发光二极管器件与量子点之间的能量转移效应，减少光致发光过程中产生的光损失，提高光的利用率。', '本揭示提供一种显示装置及显示装置的制作方法，所述显示装置包括：阵列基板和微发光二极管器件，所述微发光二极管器件阵列排布于所述阵列基板上，所述微发光二极管器件远离所述阵列基板一侧的表面设有多个向所述微发光二极管器件内部凹陷的微腔结构，通过设置于微发光二极管器件上的量子点膜层填充进微腔结构，将量子点分散到微发光二极管器件表面上的各个微腔结构中，防止量子点的聚集，同时又将量子点限制在微发光二极管器件内部，包含有量子点的多个微腔结构可以增强微发光二极管器件与量子点之间的能量转移效应，减少光致发光过程中产生的光损失，提高光的利用率。', 'CN201911077987.6', 1572969600, 'CN110992841A', 1586448000, 1586448000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 9, 5, 5, 5, 0, NULL, '916', NULL, NULL, NULL, 'CN105242442A | CN106547136A | CN108447965A | CN108511390A | CN108681145A | CN109471298A | CN110190096A | CN110556054A | WO2019027820A1', 'CN111769109A | CN111769109B | CN112968106A | CN113193101A | WO2022021615A1', NULL, 1, '\\20220510\\b8376f2473774565bdd0579f85acac33.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40919, 40921, 40920, 3);
INSERT INTO `os_patent` VALUES (23783, '微型发光二极管的巨量转移方法及显示面板', '微型发光二极管的巨量转移方法及显示面板', 'CN110993749B', '本申请公开了一种微型发光二极管(Micro LED)的巨量转移方法以及显示面板，所述方法包括提供一承载基板，所述承载基板上设置有阵列排布的多个Micro LED芯片；提供一转移基板，所述转移基板上设置有第一胶层，所述第一胶层的材料为热失黏胶，对所述第一胶层进行选择性地加热，以形成选择性粘黏的第一胶层；将转移基板上的选择性粘黏的第一胶层对准所述承载基板，选择性地黏取所述Micro LED芯片；将黏取有所述Micro LED芯片的所述转移基板对准所述目标基板，并将所述黏取的Micro LED芯片转移至所述目标基板上。本发明通过对热失黏胶进行选择性地加热，从而可选择性地拾取Micro LED芯片并转移至目标基板上，该转移方法操作简便快速，且实现转移的设备制作简单，成本低廉。', '本申请公开了一种微型发光二极管(Micro LED)的巨量转移方法以及显示面板，所述方法包括提供一承载基板，所述承载基板上设置有阵列排布的多个Micro LED芯片；提供一转移基板，所述转移基板上设置有第一胶层，所述第一胶层的材料为热失黏胶，对所述第一胶层进行选择性地加热，以形成选择性粘黏的第一胶层；将转移基板上的选择性粘黏的第一胶层对准所述承载基板，选择性地黏取所述Micro LED芯片；将黏取有所述Micro LED芯片的所述转移基板对准所述目标基板，并将所述黏取的Micro LED芯片转移至所述目标基板上。本发明通过对热失黏胶进行选择性地加热，从而可选择性地拾取Micro LED芯片并转移至目标基板上，该转移方法操作简便快速，且实现转移的设备制作简单，成本低廉。', 'CN201911250235.5', 1575820800, 'CN110993749B', 1614009600, 1586448000, NULL, 1614009600, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 7, 0, 0, 0, 0, NULL, '916', NULL, '倪晓东', NULL, 'CN108231653A | CN108513684A | CN108878602A | CN108962789A | CN109599354A | US10217793B2 | US10319782B2', NULL, NULL, 1, '\\20220510\\47b79a968b3d4e99a47d4b0a92963367.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40922, 40924, 40923, 2);
INSERT INTO `os_patent` VALUES (23784, '次毫米发光二极管的基板处理方法、其装置及其处理方法', '次毫米发光二极管的基板处理方法、其装置及其处理方法', 'CN111010810A', '本揭示提供一种次毫米发光二极管的基板处理方法、其装置及其处理方法。所述次毫米发光二极管的基板处理方法包括提供基板，所述基板包括基底和设置在所述基底上的铜膜层以及对所述铜膜层的表面进行粗糙化处理。通过本揭示能提升所述铜膜层的所述表面的粗糙度，利于所述次毫米发光二极管焊接到所述铜膜层的所述表面上。', '本揭示提供一种次毫米发光二极管的基板处理方法、其装置及其处理方法。所述次毫米发光二极管的基板处理方法包括提供基板，所述基板包括基底和设置在所述基底上的铜膜层以及对所述铜膜层的表面进行粗糙化处理。通过本揭示能提升所述铜膜层的所述表面的粗糙度，利于所述次毫米发光二极管焊接到所述铜膜层的所述表面上。', 'CN201911180480.3', 1574784000, 'CN111010810A', 1586793600, 1586793600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 3, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN106684033A | JP2007294876A | US8455908B2', NULL, NULL, 1, '\\20220510\\ee47d67a915447118bf77b9a52349855.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40925, 40927, 40926, 1);
INSERT INTO `os_patent` VALUES (23785, '液晶盒和自发光显示装置', '液晶盒和自发光显示装置', 'CN111025776A', '本申请实施例公开了一种液晶盒和自发光显示装置，该液晶盒包括第一取向膜、第二取向膜和第一导电玻璃基板和第二导电玻璃基板；第一导电玻璃基板和第二导电玻璃基板相对设置，并形成一个密闭空间；第一取向膜设置于第一导电玻璃基板远离第二导电玻璃基板的一侧；第二取向膜设置于第二导电玻璃基板远离第一导电玻璃基板的一侧；密闭空间内填充有液晶分子和二色性染料分子的混合液；其中，当在第一取向膜和第二取向膜之间施加驱动电压时，二色性染料分子随液晶分子垂直偏转；当在第一取向膜和第二取向膜之间未施加驱动电压时，二色性染料分子随液晶分子平行于第一导电玻璃基板排列。本申请实施例扩大了透明显示装置应用场景。', '本申请实施例公开了一种液晶盒和自发光显示装置，该液晶盒包括第一取向膜、第二取向膜和第一导电玻璃基板和第二导电玻璃基板；第一导电玻璃基板和第二导电玻璃基板相对设置，并形成一个密闭空间；第一取向膜设置于第一导电玻璃基板远离第二导电玻璃基板的一侧；第二取向膜设置于第二导电玻璃基板远离第一导电玻璃基板的一侧；密闭空间内填充有液晶分子和二色性染料分子的混合液；其中，当在第一取向膜和第二取向膜之间施加驱动电压时，二色性染料分子随液晶分子垂直偏转；当在第一取向膜和第二取向膜之间未施加驱动电压时，二色性染料分子随液晶分子平行于第一导电玻璃基板排列。本申请实施例扩大了透明显示装置应用场景。', 'CN201911307709.5', 1576598400, 'CN111025776A', 1587052800, 1587052800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 3, NULL, NULL, 6, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN106019453A | CN106560740A | CN108138048A | CN108227272A | CN109476994A | CN110554542A', NULL, NULL, 1, '\\20220510\\1eeeb2ff17fa49a1b65d85a06f01097b.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40928, 40930, 40929, 3);
INSERT INTO `os_patent` VALUES (23786, '像素驱动电路、驱动方法及其显示面板、显示装置', '像素驱动电路、驱动方法及其显示面板、显示装置', 'CN111028769B', '本申请公开了一种像素驱动电路、驱动方法及其显示面板、显示装置，该像素驱动电路包括：第一薄膜晶体管，第二薄膜晶体管，第一电容，第三薄膜晶体管，第二电容，第四薄膜晶体管，第三电容以及发光二极管。其中，第四薄膜晶体管的栅极用于接入第N+2行像素的扫描信号，源极连接第三四节点，漏极连接第二节点；本申请能够通过控制第二薄膜晶体管、第三薄膜晶体管和第四薄膜晶体管的通断，进行两级电容放电及各个电容(第一电容、第二电容和第三电容)之间电荷分配，实现精确控制显示面板中发光二极管的驱动电流，进一步提高了显示精度。', '本申请公开了一种像素驱动电路、驱动方法及其显示面板、显示装置，该像素驱动电路包括：第一薄膜晶体管，第二薄膜晶体管，第一电容，第三薄膜晶体管，第二电容，第四薄膜晶体管，第三电容以及发光二极管。其中，第四薄膜晶体管的栅极用于接入第N+2行像素的扫描信号，源极连接第三四节点，漏极连接第二节点；本申请能够通过控制第二薄膜晶体管、第三薄膜晶体管和第四薄膜晶体管的通断，进行两级电容放电及各个电容(第一电容、第二电容和第三电容)之间电荷分配，实现精确控制显示面板中发光二极管的驱动电流，进一步提高了显示精度。', 'CN201911409576.2', 1577721600, 'CN111028769B', 1608825600, 1587052800, NULL, 1608825600, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 21, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 8, 0, 0, 0, 0, NULL, '916', NULL, '贺轶', NULL, 'CN101996579A | CN103106873A | CN104715716A | CN105096819A | CN108806591A | CN109637454A | US20050122321A1 | US9257071B2', NULL, NULL, 1, '\\20220510\\4df25bd6274b43b5a219c4340b34511c.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 40931, 40933, 40932, 3);
INSERT INTO `os_patent` VALUES (23787, 'micro-LED显示器件的制作方法', 'micro-LED显示器件的制作方法', 'CN111029360A', '一种micro‑LED显示器件的制作方法，通过分别制作显示背板和衬底基板，然后将显示背板和衬底基板合成，再去掉衬底基板后，在形成有LED单晶膜层的显示背板上形成mirco‑LED阵列、保护层和透明电极层；有益效果为：可以自对准进行LED转移绑定，避免了常规的巨量转移制程，工艺简单，降低了生产成本，大大地提高了产品良率以及micro‑LED显示器件的像素。', '一种micro‑LED显示器件的制作方法，通过分别制作显示背板和衬底基板，然后将显示背板和衬底基板合成，再去掉衬底基板后，在形成有LED单晶膜层的显示背板上形成mirco‑LED阵列、保护层和透明电极层；有益效果为：可以自对准进行LED转移绑定，避免了常规的巨量转移制程，工艺简单，降低了生产成本，大大地提高了产品良率以及micro‑LED显示器件的像素。', 'CN201911133011.6', 1574092800, 'CN111029360A', 1587052800, 1587052800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 5, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN104617121A | CN107910414A | CN109994579A | TWI653694B | US20190347979A1', NULL, NULL, 1, '\\20220510\\39e53683015544c8bc3c32ce4b8248bc.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40934, 40936, 40935, 3);
INSERT INTO `os_patent` VALUES (23788, '显示装置及显示装置的制作方法', '显示装置及显示装置的制作方法', 'CN111048498A', '本揭示提供一种显示装置及显示装置的制作方法，所述显示装置包括阵列基板和多个微发光二极管器件，所述微发光二极管器件阵列排布于所述阵列基板上，所述微发光二极管器件包括第一基底、设置于所述基底上的第二基底和微发光二极管，通过在第二基底上设置有反光通孔，并将微发光二极管设置于所述反光通孔内部，利用反光通孔两侧光滑的侧壁对光线的反射提取作用，提高微发光二极管的光提取利用率。', '本揭示提供一种显示装置及显示装置的制作方法，所述显示装置包括阵列基板和多个微发光二极管器件，所述微发光二极管器件阵列排布于所述阵列基板上，所述微发光二极管器件包括第一基底、设置于所述基底上的第二基底和微发光二极管，通过在第二基底上设置有反光通孔，并将微发光二极管设置于所述反光通孔内部，利用反光通孔两侧光滑的侧壁对光线的反射提取作用，提高微发光二极管的光提取利用率。', 'CN201911152338.8', 1574352000, 'CN111048498A', 1587398400, 1587398400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 6, 3, 3, 3, 0, NULL, '916', NULL, NULL, NULL, 'CN101994923A | CN106684108A | CN106935608A | TW201140889A | TW201820303A | US20040218390A1', 'CN111952427A | CN112578594A | CN112578597A', NULL, 1, '\\20220510\\3d25fceb326148c4bb3f3d40183dde1a.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40937, 40939, 40938, 3);
INSERT INTO `os_patent` VALUES (23789, '微发光二极管显示面板及其制备方法、显示装置', '微发光二极管显示面板及其制备方法、显示装置', 'CN111063268A', '本申请公开了一种微发光二极管显示面板的制备方法，制备方法包括：制备阵列基板；在阵列基板上制备图案化的光阻层，光阻层至少暴露部分阵列基板；在图案化的光阻层和阵列基板上涂布焊接材料层；对焊接材料层进行显影处理以形成图案化的焊接材料层；在焊接材料层上制备微发光二极管以形成微发光二极管显示面板。通过上述方式，本申请能够提高图案化的焊接材料层的制作精度，且无需钢网可以多次重复制作，提高了工艺的可靠性。', '本申请公开了一种微发光二极管显示面板的制备方法，制备方法包括：制备阵列基板；在阵列基板上制备图案化的光阻层，光阻层至少暴露部分阵列基板；在图案化的光阻层和阵列基板上涂布焊接材料层；对焊接材料层进行显影处理以形成图案化的焊接材料层；在焊接材料层上制备微发光二极管以形成微发光二极管显示面板。通过上述方式，本申请能够提高图案化的焊接材料层的制作精度，且无需钢网可以多次重复制作，提高了工艺的可靠性。', 'CN201911270390.3', 1576080000, 'CN111063268A', 1587657600, 1587657600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 10, 4, 4, 4, 0, NULL, '916', NULL, NULL, NULL, 'CN105206643A | CN106058010A | CN106784203A | CN107768397A | CN108140664A | CN108321281A | CN108470526A | CN108538877A | CN110265522A | JP1992163455A', 'CN111613714A | CN111993768A | CN111993768B | CN113066394A', NULL, 1, '\\20220510\\2bc9fae4eecb4f40967d585692bebf9b.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40940, 40942, 40941, 3);
INSERT INTO `os_patent` VALUES (23790, 'Micro LED的转移方法及转移装置', 'Micro LED的转移方法及转移装置', 'CN111063649A', '本发明提供了一种Micro LED的转移方法及转移装置，通过将衬底基板上阵列设置的Micro LED转移至拉伸基板，然后通过对拉伸基板做横向和纵向均匀拉伸，使得相邻Micro LED之间的横向和纵向距离均达到预定的目标值，最后再将间距排列成目标值的Micro LED与阵列基板进行键合，从而完成Micro LED的转移过程。该方法无需制作图案化的模具或者图案化的转移头，生产周期缩短，制作成本降低；同时，采用拉伸基板拉伸来实现Micro LED的目标间距，可以满足不同Micro LED间距设计的需要，生产的灵活性更高。有效改进了现有Micro LED的转移方法。', '本发明提供了一种Micro LED的转移方法及转移装置，通过将衬底基板上阵列设置的Micro LED转移至拉伸基板，然后通过对拉伸基板做横向和纵向均匀拉伸，使得相邻Micro LED之间的横向和纵向距离均达到预定的目标值，最后再将间距排列成目标值的Micro LED与阵列基板进行键合，从而完成Micro LED的转移过程。该方法无需制作图案化的模具或者图案化的转移头，生产周期缩短，制作成本降低；同时，采用拉伸基板拉伸来实现Micro LED的目标间距，可以满足不同Micro LED间距设计的需要，生产的灵活性更高。有效改进了现有Micro LED的转移方法。', 'CN201911216985.0', 1575302400, 'CN111063649A', 1587657600, 1587657600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 17, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 4, 3, 3, 3, 0, NULL, '916', NULL, NULL, NULL, 'CN109661122A | CN109950226A | TW201616635A | US20050057641A1', 'CN112968078A | CN112968078B | WO2021226945A1', NULL, 1, '\\20220510\\14341b5569374bb59849b98460c87fb8.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40943, 40945, 40944, 4);
INSERT INTO `os_patent` VALUES (23791, '一种显示面板及其制备方法、显示装置', '一种显示面板及其制备方法、显示装置', 'CN111063693A', '本发明提供一种显示面板及其制备方法、显示装置，显示面板包括包括显示区和围绕所述显示区的非显示区；以及基板，从所述显示区延伸至所述非显示区；光阻层，设于所述显示区的所述基板上；微型发光二极管层，设于所述非显示区的所述基板上。本发明提供一种显示面板及其制备方法、显示装置，涂布一层白色光阻层在基板上，提升微型发光二极管的亮度，降低微型发光二极管背光基板制作成本，提升生产良率；同时能够保护薄膜晶体管器件，提高薄膜晶体管器件的稳定性。', '本发明提供一种显示面板及其制备方法、显示装置，显示面板包括包括显示区和围绕所述显示区的非显示区；以及基板，从所述显示区延伸至所述非显示区；光阻层，设于所述显示区的所述基板上；微型发光二极管层，设于所述非显示区的所述基板上。本发明提供一种显示面板及其制备方法、显示装置，涂布一层白色光阻层在基板上，提升微型发光二极管的亮度，降低微型发光二极管背光基板制作成本，提升生产良率；同时能够保护薄膜晶体管器件，提高薄膜晶体管器件的稳定性。', 'CN201911231434.1', 1575475200, 'CN111063693A', 1587657600, 1587657600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 2, 6, 6, 6, 0, NULL, '916', NULL, NULL, NULL, 'CN108983497A | CN109873007A', 'CN111584511A | CN111584511B | CN112768590A | CN113763837A | WO2021227219A1 | WO2021233437A1', NULL, 1, '\\20220510\\174e193dd4c845248baf29a95ee26412.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40946, 40948, 40947, 1);
INSERT INTO `os_patent` VALUES (23792, '光耦合输出透镜的材料组成物及制造方法', '光耦合输出透镜的材料组成物及制造方法', 'CN111077732A', '本申请公开了一种光耦合输出透镜的材料组成物及制造方法。所述材料组成物包括：三羟甲基丙烷三(3‑巯基丙酸酯)、三乙二醇二乙烯基醚及紫外自由基引发剂，其中三羟甲基丙烷三(3‑巯基丙酸酯)与三乙二醇二乙烯基醚的摩尔比为2：3，通过紫外光固化形成光耦合输出透镜。所述光耦合输出透镜的制造方法的制造方法包括：将三羟甲基丙烷三(3‑巯基丙酸酯)及三乙二醇二乙烯基醚混合；加入紫外自由基引发剂，形成光耦合输出透镜的材料组成物；及将所述材料组成物设置在量子点显示面板的薄膜封装层上，并对所述材料组成物进行紫外光固化工序，形成光耦合输出透镜。', '本申请公开了一种光耦合输出透镜的材料组成物及制造方法。所述材料组成物包括：三羟甲基丙烷三(3‑巯基丙酸酯)、三乙二醇二乙烯基醚及紫外自由基引发剂，其中三羟甲基丙烷三(3‑巯基丙酸酯)与三乙二醇二乙烯基醚的摩尔比为2：3，通过紫外光固化形成光耦合输出透镜。所述光耦合输出透镜的制造方法的制造方法包括：将三羟甲基丙烷三(3‑巯基丙酸酯)及三乙二醇二乙烯基醚混合；加入紫外自由基引发剂，形成光耦合输出透镜的材料组成物；及将所述材料组成物设置在量子点显示面板的薄膜封装层上，并对所述材料组成物进行紫外光固化工序，形成光耦合输出透镜。', 'CN201911321886.9', 1576771200, 'CN111077732A', 1588003200, 1588003200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 18, 0, 0, 0, 3, NULL, '916', NULL, NULL, NULL, 'CN103279009A | CN105093830A | CN105531824A | CN106104841A | CN106632772A | CN107533287A | CN107718819A | CN107966878A | CN109749733A | CN109768068A | CN110235032A | CN1971420A | GB1390711A | TW200519413A | US20050119366A1 | US20180157124A1 | US20180237690A1 | US20180239245A1', NULL, 'NICOLAS ZIVIC ET AL.: \"《Novel Naphthalimide-amine Based Photoinitiators Operating under Violet and Blue LEDs and Usable for Various Polymerization Reactions and Synthesis of Hydrogels》\", 《POLYMER CHEMISTRY》 | XINGYU WU ET AL.: \"《D-π-A-type aryl dialkylsulfonium salts as one-component versatile photoinitiators under UV/visible LEDs irradiation》\", 《DYES AND PIGMENTS》 | 曹国华等: \"《有机电致发光器件及载流子输运特性》\", 30 November 2018, 吉林大学出版社', 1, '\\20220510\\b405a4001ce940c0809f6dc4d3f98c6c.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40949, 40951, 40950, 3);
INSERT INTO `os_patent` VALUES (23793, '微发光二极管转移装置及微发光二极管转移方法', '微发光二极管转移装置及微发光二极管转移方法', 'CN111081604A', '本揭示提供一种微发光二极管转移装置和微发光二极管转移方法，所述微发光二极管转移装置包括固持部件，用于固持转移基板；光源，用于提供面状光线；以及液晶光阀，设置于所述面状光线的传输路径上，包括多个子光阀，所述子光阀与转移基板上的微发光二极管相对应，通过控制子光阀的开启和关闭对穿过液晶光阀的光线进行过滤，以对转移基板进行选择性照射，使得被照射部分的微发光二极管因光敏胶粘性减弱从转移基板脱离，并粘附至目标基板上，实现对巨量的微发光二极管进行选择性转移的技术效果。', '本揭示提供一种微发光二极管转移装置和微发光二极管转移方法，所述微发光二极管转移装置包括固持部件，用于固持转移基板；光源，用于提供面状光线；以及液晶光阀，设置于所述面状光线的传输路径上，包括多个子光阀，所述子光阀与转移基板上的微发光二极管相对应，通过控制子光阀的开启和关闭对穿过液晶光阀的光线进行过滤，以对转移基板进行选择性照射，使得被照射部分的微发光二极管因光敏胶粘性减弱从转移基板脱离，并粘附至目标基板上，实现对巨量的微发光二极管进行选择性转移的技术效果。', 'CN201911214312.1', 1575216000, 'CN111081604A', 1588003200, 1588003200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 6, 2, 1, 1, 0, NULL, '916', NULL, NULL, NULL, 'CN107431107A | CN107919414A | CN108962789A | CN109994413A | CN202362559U | US20190027642A1', 'CN111477651A | CN112992756A', NULL, 1, '\\20220510\\344aee053902486aae061e68cc3e51f4.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40952, 40954, 40953, 3);
INSERT INTO `os_patent` VALUES (23794, '显示面板', '显示面板', 'CN111126210A', '本申请实施例提供了一种显示面板，该显示面板具有第一显示区和围绕所述第一显示区设置的第二显示区，该显示面板包括背光模组、阵列基板和彩膜基板，所述阵列基板与所述背光模组层叠设置，所述阵列基板上有红外发生器，所述红外发生器位于所述第一显示区；所述彩膜基板与所述阵列基板相对设置，所述彩膜基板上设置有发光显示器件和指纹传感器，所述发光显示器件和所述指纹传感器位于所述第一显示区。本方案提供的显示面板可以在实现屏下指纹识别技术的情况下不影响正常显示。', '本申请实施例提供了一种显示面板，该显示面板具有第一显示区和围绕所述第一显示区设置的第二显示区，该显示面板包括背光模组、阵列基板和彩膜基板，所述阵列基板与所述背光模组层叠设置，所述阵列基板上有红外发生器，所述红外发生器位于所述第一显示区；所述彩膜基板与所述阵列基板相对设置，所述彩膜基板上设置有发光显示器件和指纹传感器，所述发光显示器件和所述指纹传感器位于所述第一显示区。本方案提供的显示面板可以在实现屏下指纹识别技术的情况下不影响正常显示。', 'CN201911279332.7', 1576166400, 'CN111126210A', 1588867200, 1588867200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\c66f6910de784b5fb171a622415c2d9c.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40955, 40957, 40956, 1);
INSERT INTO `os_patent` VALUES (23795, '一种大尺寸显示器及其拼接方法', '一种大尺寸显示器及其拼接方法', 'CN111128051A', '本申请公开了一种大尺寸显示器及其拼接方法，大尺寸显示器包括一基板；至少两个显示面板，真空贴附于所述基板的一面，所述显示面板呈阵列排布，且相邻的所述显示面板之间无缝拼接；一体式背光模组，贴附于所述显示面板远离所述基板的一面或者设于所述基板远离所述显示面板的一面。通过将多个显示面板全贴合在一个大片的玻璃基板上，形成一个大片的拼接面板，再组合一个一体式背光模组形成大尺寸显示器；由于多个显示面板是真空贴合在大片的玻璃基板上，所以显示面板之间的间隙可以控制接近零，避免现有的大尺寸显示器拼接方法带来的组装间隙。', '本申请公开了一种大尺寸显示器及其拼接方法，大尺寸显示器包括一基板；至少两个显示面板，真空贴附于所述基板的一面，所述显示面板呈阵列排布，且相邻的所述显示面板之间无缝拼接；一体式背光模组，贴附于所述显示面板远离所述基板的一面或者设于所述基板远离所述显示面板的一面。通过将多个显示面板全贴合在一个大片的玻璃基板上，形成一个大片的拼接面板，再组合一个一体式背光模组形成大尺寸显示器；由于多个显示面板是真空贴合在大片的玻璃基板上，所以显示面板之间的间隙可以控制接近零，避免现有的大尺寸显示器拼接方法带来的组装间隙。', 'CN202010068653.9', 1579536000, 'CN111128051A', 1588867200, 1588867200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 7, 5, 5, 5, 0, NULL, '916', NULL, NULL, NULL, 'CN106133812A | CN107045232A | CN107589578A | CN108181752A | CN109445200A | CN110060577A | CN201107508Y', 'CN111477119A | CN111951697A | CN111951697B | CN113112925A | CN113112925B', NULL, 1, '\\20220510\\d4e4c3283e0c437bb6bb607b63c848af.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40958, 40960, 40959, 1);
INSERT INTO `os_patent` VALUES (23796, '一种背板的制作方法', '一种背板的制作方法', 'CN111128711A', '本发明提供一种背板的制作方法，该方法包括：在衬底基板上制作第二金属层；对所述第二金属层进行图案化处理，形成阳极以及阴极；在所述第二金属层上形成第一钝化层，对所述第一钝化层进行图案化处理，以形成开口区域，所述开口区域用于将所述阳极和所述阴极裸露在外；在所述第一钝化层以及所述阳极和所述阴极上制作第二钝化层；在所述第二钝化层上制作遮光层，对所述遮光层进行图案化处理，以使与所述开口区域对应位置处的遮光层去除；将所述阳极和所述阴极上方的第二钝化层去除。本发明的背板的制作方法，能够提高发光器件的焊接效果和背板良率。', '本发明提供一种背板的制作方法，该方法包括：在衬底基板上制作第二金属层；对所述第二金属层进行图案化处理，形成阳极以及阴极；在所述第二金属层上形成第一钝化层，对所述第一钝化层进行图案化处理，以形成开口区域，所述开口区域用于将所述阳极和所述阴极裸露在外；在所述第一钝化层以及所述阳极和所述阴极上制作第二钝化层；在所述第二钝化层上制作遮光层，对所述遮光层进行图案化处理，以使与所述开口区域对应位置处的遮光层去除；将所述阳极和所述阴极上方的第二钝化层去除。本发明的背板的制作方法，能够提高发光器件的焊接效果和背板良率。', 'CN201911278099.0', 1576080000, 'CN111128711A', 1588867200, 1588867200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\762ddfdee30b4ce196b52636cfd6fc8b.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40961, 40963, 40962, 3);
INSERT INTO `os_patent` VALUES (23797, 'Micro LED的转移方法', 'Micro LED的转移方法', 'CN111128843A', '本发明提供一种Micro LED的转移方法，包括：提供阵列基板，阵列基板一侧设置有粘结层，阵列基板的像素区包括多个薄膜晶体管；将转移板转移至阵列基板上方，转移板靠近粘结层的一侧设置有层叠的缓冲层和芯片层，芯片层包括阵列分布的多个Micro LED芯片，且数量大于薄膜晶体管的数量，Micro LED芯片包括第一Micro LED芯片，第一Micro LED芯片的第一电极与薄膜晶体管的第二电极对应；将掩膜版转移至转移板远离阵列基板的一侧，掩膜版的开口区与第一Micro LED芯片对应；通过掩膜版对转移板进行激光扫描，将第一Micro LED芯片从缓冲层剥离至粘结层上；将第一Micro LED芯片的第一电极与薄膜晶体管的第二电极电性连接。本发明简化了转移工序，提高了转移良率。', '本发明提供一种Micro LED的转移方法，包括：提供阵列基板，阵列基板一侧设置有粘结层，阵列基板的像素区包括多个薄膜晶体管；将转移板转移至阵列基板上方，转移板靠近粘结层的一侧设置有层叠的缓冲层和芯片层，芯片层包括阵列分布的多个Micro LED芯片，且数量大于薄膜晶体管的数量，Micro LED芯片包括第一Micro LED芯片，第一Micro LED芯片的第一电极与薄膜晶体管的第二电极对应；将掩膜版转移至转移板远离阵列基板的一侧，掩膜版的开口区与第一Micro LED芯片对应；通过掩膜版对转移板进行激光扫描，将第一Micro LED芯片从缓冲层剥离至粘结层上；将第一Micro LED芯片的第一电极与薄膜晶体管的第二电极电性连接。本发明简化了转移工序，提高了转移良率。', 'CN201911371905.9', 1577376000, 'CN111128843A', 1588867200, 1588867200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 6, 8, 8, 8, 0, NULL, '916', NULL, NULL, NULL, 'CN107768487A | CN109473532A | CN109585380A | CN109994579A | US20130126589A1 | US20190348392A1', 'CN111584689A | CN111584689B | CN111739987A | CN112908897A | CN112908897B | CN113224220A | WO2021253234A1 | WO2022011566A1', NULL, 1, '\\20220510\\1c06c8e922b04215a22576891f627e40.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40964, 40966, 40965, 1);
INSERT INTO `os_patent` VALUES (23798, '一种微发光二极管显示基板及其制备方法', '一种微发光二极管显示基板及其制备方法', 'CN111128942B', '本申请公开一种微发光二极管显示基板及其制备方法。所述制备方法将Micro LED结构与接收基板通过有机粘合剂固定，Micro LED结构两侧设有电极，其上带有底切结构，接收基板上也带有底切结构，从而仅采用开放式掩膜板沉积电极材料，即可获得顶电极及连接Micro LED结构与接收基板间电极的自对准导线，电极间具有良好的绝缘性；可以一次性完成所有Micro LED结构与接收基板间对应电极间的连接，且可以避免每颗Micro LED结构与接收基板连接出现差异性，提高器件制作良率。', '本申请公开一种微发光二极管显示基板及其制备方法。所述制备方法将Micro LED结构与接收基板通过有机粘合剂固定，Micro LED结构两侧设有电极，其上带有底切结构，接收基板上也带有底切结构，从而仅采用开放式掩膜板沉积电极材料，即可获得顶电极及连接Micro LED结构与接收基板间电极的自对准导线，电极间具有良好的绝缘性；可以一次性完成所有Micro LED结构与接收基板间对应电极间的连接，且可以避免每颗Micro LED结构与接收基板连接出现差异性，提高器件制作良率。', 'CN201911229951.5', 1575388800, 'CN111128942B', 1626969600, 1588867200, NULL, 1626969600, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 16, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 4, 0, 0, 0, 0, NULL, '916', NULL, '刘玮德', NULL, 'CN107170773A | CN109786307A | CN110520832A | US20170179097A1', NULL, NULL, 1, '\\20220510\\37127c215eac472cb4b7e50e3370c3a9.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 40967, 40969, 40968, 2);
INSERT INTO `os_patent` VALUES (23799, '显示面板以及显示装置', '显示面板以及显示装置', 'CN111129271B', '本发明提供了显示面板以及显示装置，该显示面板以及显示装置包括发光层和反光层，发光层和反光层相对设置；发光层包括多个发光部，相邻的两发光部之间具有间隙，发光部向反光层发射第一光线，第一光线在反光层上反射形成反射光，反射光穿过间隙形成出射光；该方案可以反射Micro LED器件发出的光，以过滤其中的高能量、穿透性强的光线，通过降低Micro LED器件发出的光对人眼造成的伤害，提高了Micro LED显示屏的安全性。', '本发明提供了显示面板以及显示装置，该显示面板以及显示装置包括发光层和反光层，发光层和反光层相对设置；发光层包括多个发光部，相邻的两发光部之间具有间隙，发光部向反光层发射第一光线，第一光线在反光层上反射形成反射光，反射光穿过间隙形成出射光；该方案可以反射Micro LED器件发出的光，以过滤其中的高能量、穿透性强的光线，通过降低Micro LED器件发出的光对人眼造成的伤害，提高了Micro LED显示屏的安全性。', 'CN201911374179.6', 1577030400, 'CN111129271B', 1627920000, 1588867200, NULL, 1627920000, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, '王倩', NULL, NULL, NULL, NULL, 1, '\\20220510\\e8a1ace6eb664159bbbdef16bd864517.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 40970, 40972, 40971, 2);
INSERT INTO `os_patent` VALUES (23800, '一种微型发光二极管转移装置、转移方法及显示装置', '一种微型发光二极管转移装置、转移方法及显示装置', 'CN111146129B', '本申请实施例提供一种微型发光二极管转移装置、转移方法及显示装置，本申请的微型发光二极管转移装置包括收集管和驱动装置，收集管具有相对设置的第一端和第二端，所述收集管包括收集口和存储管，所述收集口与所述存储管连通，所述收集口设置在所述第一端，驱动装置设置在所述第二端，所述驱动装置用于提供驱动力，其中，所述驱动装置用于提供驱动力以使得所述微型发光二极管从所述收集口被拾取到所述存储管内，所述存储管可层叠存储至少两个微型发光二极管。本申请可以有效提高转移速度，使得微型发光二极管技术更加适合量产。', '本申请实施例提供一种微型发光二极管转移装置、转移方法及显示装置，本申请的微型发光二极管转移装置包括收集管和驱动装置，收集管具有相对设置的第一端和第二端，所述收集管包括收集口和存储管，所述收集口与所述存储管连通，所述收集口设置在所述第一端，驱动装置设置在所述第二端，所述驱动装置用于提供驱动力，其中，所述驱动装置用于提供驱动力以使得所述微型发光二极管从所述收集口被拾取到所述存储管内，所述存储管可层叠存储至少两个微型发光二极管。本申请可以有效提高转移速度，使得微型发光二极管技术更加适合量产。', 'CN202010257544.1', 1585843200, 'CN111146129B', 1600099200, 1589212800, NULL, 1600099200, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 12, 4, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 6, 0, 0, 0, 0, NULL, '916', NULL, '马伟彬', NULL, 'CN107039298A | CN110544661A | CN110838503A | CN201676674U | JP2017122608A | US5888127A', NULL, NULL, 1, '\\20220510\\032f7fb2e5f34f6ab29d5ea3987d8924.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 40973, 40975, 40974, 4);
INSERT INTO `os_patent` VALUES (23801, '一种显示模组及其制备方法及电子装置', '一种显示模组及其制备方法及电子装置', 'CN111146189A', '本发明提供一种显示模组及其制备方法及电子装置，该显示模组包括：支撑体；显示面板，所述显示面板的截面结构包括：弯曲的柔性驱动基板，其包括显示区域、弯曲区域以及绑定区域；其中所述弯曲的柔性驱动基板具有一腔体；显示单元，绑定在所述显示区域内；所述显示单元包括多个微型发光二极管；其中所述支撑体设于所述腔体内，所述支撑体的纵向截面的形状为圆角矩形。本发明的显示模组及其制备方法及电子装置，能够避免显示区域受损，提高了产品良率。', '本发明提供一种显示模组及其制备方法及电子装置，该显示模组包括：支撑体；显示面板，所述显示面板的截面结构包括：弯曲的柔性驱动基板，其包括显示区域、弯曲区域以及绑定区域；其中所述弯曲的柔性驱动基板具有一腔体；显示单元，绑定在所述显示区域内；所述显示单元包括多个微型发光二极管；其中所述支撑体设于所述腔体内，所述支撑体的纵向截面的形状为圆角矩形。本发明的显示模组及其制备方法及电子装置，能够避免显示区域受损，提高了产品良率。', 'CN201911289952.9', 1576425600, 'CN111146189A', 1589212800, 1589212800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 4, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 6, 1, 1, 1, 0, NULL, '916', NULL, NULL, NULL, 'CN104300089A | CN110060574A | CN110226192A | CN110379322A | CN110444121A | US20180199426A1', 'CN112634764A', NULL, 1, '\\20220510\\5ef7bca8a92f4f5e93d8a1449f0787b8.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40976, 40978, 40977, 3);
INSERT INTO `os_patent` VALUES (23802, '背光模组及显示装置', '背光模组及显示装置', 'CN111158191A', '本发明提供了一种背光模组及显示装置。所述背光模组中包括基板、Mini‑LED以及至少一导电发光层。所述基板包括发光区和围绕发光区的非发光区。所述Mini‑LED设于所述基板的所述发光区。所述导电反光层覆盖整个所述非发光区，所述Mini‑LED电连接至一导电反光层。', '本发明提供了一种背光模组及显示装置。所述背光模组中包括基板、Mini‑LED以及至少一导电发光层。所述基板包括发光区和围绕发光区的非发光区。所述Mini‑LED设于所述基板的所述发光区。所述导电反光层覆盖整个所述非发光区，所述Mini‑LED电连接至一导电反光层。', 'CN202010079496.1', 1580745600, 'CN111158191A', 1589472000, 1589472000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 4, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN109461376A | CN110133914A | CN110398857A | EP1791020A1', NULL, NULL, 1, '\\20220510\\2d22b1c2b6fb4d4d959a5c07fa88afb2.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40979, 40981, 40980, 4);
INSERT INTO `os_patent` VALUES (23803, '一种微型发光二极管转移装置、转移方法及显示装置', '一种微型发光二极管转移装置、转移方法及显示装置', 'CN111162034B', '本申请实施例提供一种微型发光二极管转移装置、转移方法及显示装置，本申请的微型发光二极管转移装置包括收集管和弹性端口，收集管具有相对设置的第一端和第二端，所述收集管的管径大于所述微型发光二管的直径，弹性端口设置在所述第一端端部，所述弹性端口的口径小于所述微型发光二极管的直径；其中，所述收集管将微型发光二极管通过挤压后从所述弹性端口进入到所述收集管内，所述收集管可存储若干微型发光二极管。本申请可以有效提高转移速度，使得微型发光二极管技术更加适合量产。', '本申请实施例提供一种微型发光二极管转移装置、转移方法及显示装置，本申请的微型发光二极管转移装置包括收集管和弹性端口，收集管具有相对设置的第一端和第二端，所述收集管的管径大于所述微型发光二管的直径，弹性端口设置在所述第一端端部，所述弹性端口的口径小于所述微型发光二极管的直径；其中，所述收集管将微型发光二极管通过挤压后从所述弹性端口进入到所述收集管内，所述收集管可存储若干微型发光二极管。本申请可以有效提高转移速度，使得微型发光二极管技术更加适合量产。', 'CN202010257559.8', 1585843200, 'CN111162034B', 1600963200, 1589472000, NULL, 1600963200, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 10, 4, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 4, 0, 0, 0, 0, NULL, '916', NULL, '周辉辉', NULL, 'CN110335843A | CN208018079U | CN210050592U | JP2017122608A', NULL, NULL, 1, '\\20220510\\9440f0d2ebbf4572bd17235d888655f6.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 40982, 40984, 40983, 4);
INSERT INTO `os_patent` VALUES (23804, '一种显示装置', '一种显示装置', 'CN111176018A', '本发明提供一种显示装置，包括背光模组、以及设置于所述背光模组上的显示模组，所述背光模组开设有第一通孔，所述第一通孔内设置有采光构件，所述第一通孔的最大横截面对应于所述显示装置的采光区；所述采光区内还设置有第一光源以及导光构件，所述第一光源和所述导光构件均环绕所述采光构件设置。本发明通过将采光构件设置在显示模组下方，将显示装置根据采光器件对应位置分为采光区与非采光区，采光构件不工作时无需采光，显示装置的全屏幕正常显示；需采光时，采光区转变为高透光状态让光透过，实现采光，采光构件正常工作，实现了真正意义上的全面屏显示。', '本发明提供一种显示装置，包括背光模组、以及设置于所述背光模组上的显示模组，所述背光模组开设有第一通孔，所述第一通孔内设置有采光构件，所述第一通孔的最大横截面对应于所述显示装置的采光区；所述采光区内还设置有第一光源以及导光构件，所述第一光源和所述导光构件均环绕所述采光构件设置。本发明通过将采光构件设置在显示模组下方，将显示装置根据采光器件对应位置分为采光区与非采光区，采光构件不工作时无需采光，显示装置的全屏幕正常显示；需采光时，采光区转变为高透光状态让光透过，实现采光，采光构件正常工作，实现了真正意义上的全面屏显示。', 'CN202010088443.6', 1581436800, 'CN111176018A', 1589817600, 1589817600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 15, 5, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 8, 8, NULL, NULL, 8, 4, 4, 4, 0, NULL, '916', NULL, NULL, NULL, 'CN108594524A | CN108957849A | CN109856850A | CN110190097A | CN110231735A | CN110275340A | CN110515237A | CN110703499A', 'CN111752043A | CN111885226A | WO2021248559A1 | WO2022007053A1', NULL, 1, '\\20220510\\a441f535498b4e60b1fe5497c2aedda3.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40985, 40987, 40986, 8);
INSERT INTO `os_patent` VALUES (23805, '一种背光源驱动方法、背光源驱动电路及背光源驱动装置', '一种背光源驱动方法、背光源驱动电路及背光源驱动装置', 'CN111179816B', '本发明公开了一种背光源驱动方法、背光源驱动电路及背光源驱动装置，驱动方法包括第一驱动信号处理步骤、第二驱动信号处理步骤及背光源驱动步骤；驱动电路包括背光驱动模组，背光驱动模组包括第一处理模块、第二处理模块及驱动控制模块，第一处理模块包括第一信号解码模块、第一寄存模块及第一转换模块，第二处理模块包括第二信号解码模块、第二寄存模块、第二转换模块及第三转换模块；驱动装置包括上述电路。本发明优化了背光源驱动策略，极大地简化了背光源驱动线路，进而能够极大地降低背光源驱动板占用的空间，使背光源驱动成本更低、可靠性更强，彻底地解决了现有背光源驱动方案存在的诸多问题。', '本发明公开了一种背光源驱动方法、背光源驱动电路及背光源驱动装置，驱动方法包括第一驱动信号处理步骤、第二驱动信号处理步骤及背光源驱动步骤；驱动电路包括背光驱动模组，背光驱动模组包括第一处理模块、第二处理模块及驱动控制模块，第一处理模块包括第一信号解码模块、第一寄存模块及第一转换模块，第二处理模块包括第二信号解码模块、第二寄存模块、第二转换模块及第三转换模块；驱动装置包括上述电路。本发明优化了背光源驱动策略，极大地简化了背光源驱动线路，进而能够极大地降低背光源驱动板占用的空间，使背光源驱动成本更低、可靠性更强，彻底地解决了现有背光源驱动方案存在的诸多问题。', 'CN202010021101.2', 1578499200, 'CN111179816B', 1625500800, 1589817600, NULL, 1625500800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 4, NULL, NULL, 5, 0, 0, 0, 0, NULL, '916', NULL, '陈煌琼', NULL, 'CN102098055A | CN102651205A | CN105304053A | CN109126917A | CN209515173U', NULL, NULL, 1, '\\20220510\\390025a2a97444df97793b01b5ef4950.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40988, 40990, 40989, 4);
INSERT INTO `os_patent` VALUES (23806, '显示背板检测设备及其检测方法、装置', '显示背板检测设备及其检测方法、装置', 'CN111199700A', '本申请涉及一种显示背板检测设备及其检测方法、装置。所述检测设备包括载台，电流传感电路板，电源设备和控制设备；基于电流传感电路板包括的各电流传感器与待检测背板包含的各LED元件一一对应连接。进而电源设备向各电流传感器传输电压信号；各电流传感器根据电压信号分别检测相应的LED元件，得到各相应的电流信号，并将各电流信号分别传输给控制设备；控制设备依次将接收到的各电流信号的电流值与LED阈值电流比对，并根据比对的结果，得到对应超出LED阈值电流的LED元件的位置信息，从而可一定程度上提前预知背板在LED元件后点亮情况，达到提前判定缺陷、简化检测流程、提高背板缺陷检测率。', '本申请涉及一种显示背板检测设备及其检测方法、装置。所述检测设备包括载台，电流传感电路板，电源设备和控制设备；基于电流传感电路板包括的各电流传感器与待检测背板包含的各LED元件一一对应连接。进而电源设备向各电流传感器传输电压信号；各电流传感器根据电压信号分别检测相应的LED元件，得到各相应的电流信号，并将各电流信号分别传输给控制设备；控制设备依次将接收到的各电流信号的电流值与LED阈值电流比对，并根据比对的结果，得到对应超出LED阈值电流的LED元件的位置信息，从而可一定程度上提前预知背板在LED元件后点亮情况，达到提前判定缺陷、简化检测流程、提高背板缺陷检测率。', 'CN202010114774.2', 1582560000, 'CN111199700A', 1590422400, 1590422400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 15, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 1, 1, 1, 0, NULL, '916', NULL, NULL, NULL, NULL, 'CN113451163A', NULL, 1, '\\20220510\\bf40c8a19d984b6a93ad579182d1df19.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40991, 40993, 40992, 1);
INSERT INTO `os_patent` VALUES (23807, '显示装置亮度调节装置及方法', '显示装置亮度调节装置及方法', 'CN111199707B', '本发明提供一种显示装置亮度调节装置及方法，该显示装置亮度调节方法通过在向显示装置提供电压数据前，先判断是否满足峰值亮度条件，在满足峰值亮度条件时，向显示装置提供第一电压数据，在不满足峰值亮度条件时，向显示装置提供第二电压数据，从而使得在满足峰值亮度条件时，提供大于第二电压数据的第一电压数据，使得在显示装置待显示图像发光时发光亮度提高，甚至达到峰值亮度，提高对比度，解决了现有miniLED显示屏存在亮度无法达到峰值，导致显示屏的对比度较差的技术问题。', '本发明提供一种显示装置亮度调节装置及方法，该显示装置亮度调节方法通过在向显示装置提供电压数据前，先判断是否满足峰值亮度条件，在满足峰值亮度条件时，向显示装置提供第一电压数据，在不满足峰值亮度条件时，向显示装置提供第二电压数据，从而使得在满足峰值亮度条件时，提供大于第二电压数据的第一电压数据，使得在显示装置待显示图像发光时发光亮度提高，甚至达到峰值亮度，提高对比度，解决了现有miniLED显示屏存在亮度无法达到峰值，导致显示屏的对比度较差的技术问题。', 'CN202010142571.4', 1583251200, 'CN111199707B', 1625500800, 1590422400, NULL, 1625500800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 5, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, '苏金凤', NULL, NULL, NULL, NULL, 1, '\\20220510\\78601ab312c145539944e9055b5cd3f7.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 40994, 40996, 40995, 5);
INSERT INTO `os_patent` VALUES (23808, '背光模组及显示面板', '背光模组及显示面板', 'CN111208673B', '本发明提供一种背光模组及显示面板，所述背光模组包括背板、灯板以及反射层；多个灯板，阵列拼接排布于所述背板上表面；所述拼接区设于相邻的两灯板之间，所述拼接区具有一拼接缝，所述拼接缝内设有补光材料；所述反射层设于所述灯板及所述拼接区上表面。通过在拼接缝填充补光材料以及在拼接缝最靠近的第一列/行的Mini‑LED与第二列/行的Mini‑LED之间设置发射片，使得Mini‑LED射出的光线至反射片，反射片将光线反射拼接区位置，以使拼接位置发光的色调和正常区域一致，提高了拼接区的亮度，避免拼接区产生色差，从而提升背光模组发出光的品质。', '本发明提供一种背光模组及显示面板，所述背光模组包括背板、灯板以及反射层；多个灯板，阵列拼接排布于所述背板上表面；所述拼接区设于相邻的两灯板之间，所述拼接区具有一拼接缝，所述拼接缝内设有补光材料；所述反射层设于所述灯板及所述拼接区上表面。通过在拼接缝填充补光材料以及在拼接缝最靠近的第一列/行的Mini‑LED与第二列/行的Mini‑LED之间设置发射片，使得Mini‑LED射出的光线至反射片，反射片将光线反射拼接区位置，以使拼接位置发光的色调和正常区域一致，提高了拼接区的亮度，避免拼接区产生色差，从而提升背光模组发出光的品质。', 'CN202010055454.4', 1579190400, 'CN111208673B', 1612195200, 1590681600, NULL, 1612195200, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 15, 4, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 1, 0, 0, 0, 0, NULL, '916', NULL, '纪红', NULL, 'CN109116631A', NULL, NULL, 1, '\\20220510\\623f65d98a9442beb5957961c7e219d4.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 40997, 40999, 40998, 3);
INSERT INTO `os_patent` VALUES (23809, '一种膜层加热装置及膜层固化方法', '一种膜层加热装置及膜层固化方法', 'CN111212486A', '本申请实施例提供一种膜层加热装置及膜层固化方法，本申请实施例所提供的膜层加热装置包括电路板和光源部。电路板具有相对设置的第一面和第二面，光源部所述光源部包括若干个，所述光源部呈矩阵设置在所述第一面，其中，每一个光源部可以单独控制，使得电路板上不同区域的光源部发光。本申请膜层加热装置通过控制膜厚不均区的光源部发光，调控边缘溶液固化温度，达到固化膜层膜厚均匀的目的。', '本申请实施例提供一种膜层加热装置及膜层固化方法，本申请实施例所提供的膜层加热装置包括电路板和光源部。电路板具有相对设置的第一面和第二面，光源部所述光源部包括若干个，所述光源部呈矩阵设置在所述第一面，其中，每一个光源部可以单独控制，使得电路板上不同区域的光源部发光。本申请膜层加热装置通过控制膜厚不均区的光源部发光，调控边缘溶液固化温度，达到固化膜层膜厚均匀的目的。', 'CN202010014887.5', 1578326400, 'CN111212486A', 1590681600, 1590681600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 7, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 5, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN104216146A | CN104820316A | CN109326729A | CN1731250A | US20190196092A1', NULL, NULL, 1, '\\20220510\\0f053f6a8f274203bfb97a350c9a431b.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41000, 41002, 41001, 1);
INSERT INTO `os_patent` VALUES (23810, '背光模组及具有该背光模组的显示装置', '背光模组及具有该背光模组的显示装置', 'CN111240096B', '本申请提供了一种背光模组，包括发光层和亮度增强层，所述亮度增强层设于所述发光层的表面。所述亮度增强层包括若干光学微腔，每个所述光学微腔用于使所述发光层射入自身的光产生谐振得到谐振光，并将所述谐振光射出。本申请提供的背光模组在发光层的表面设置亮度增强层，通过将亮度增强层设计为光学微腔的结构，基于光学微腔的WGM谐振效应和天线效应，使发光层射入至光学微腔内的部分光的强度极大地增强并射出，从而极大地提高了发光层的发光亮度。本申请还提供一种具有该背光模组的显示装置。', '本申请提供了一种背光模组，包括发光层和亮度增强层，所述亮度增强层设于所述发光层的表面。所述亮度增强层包括若干光学微腔，每个所述光学微腔用于使所述发光层射入自身的光产生谐振得到谐振光，并将所述谐振光射出。本申请提供的背光模组在发光层的表面设置亮度增强层，通过将亮度增强层设计为光学微腔的结构，基于光学微腔的WGM谐振效应和天线效应，使发光层射入至光学微腔内的部分光的强度极大地增强并射出，从而极大地提高了发光层的发光亮度。本申请还提供一种具有该背光模组的显示装置。', 'CN202010173294.3', 1584028800, 'CN111240096B', 1625500800, 1591286400, NULL, 1625500800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 23, 0, 0, 0, 0, NULL, '916', NULL, '田静', NULL, 'CN103022267A | CN104409561A | CN105182611A | CN105849989A | CN106356425A | CN107869987A | CN109148673A | CN110137183A | CN110346859A | CN110518450A | CN110556054A | CN110556394A | CN1881041A | CN1975487A | CN206757181U | EP0499272A2 | US20030016718A1 | US20030063426A1 | US20140023380A1 | US20140043611A1 | US6711200B1 | WO1995003621A1 | WO2017173289A2', NULL, NULL, 1, '\\20220510\\0b0547a490a24f7b9972b658c4e5c04f.png', NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 41003, 41005, 41004, 4);
INSERT INTO `os_patent` VALUES (23811, '显示面板及显示装置', '显示面板及显示装置', 'CN111243495A', '本发明提供的MiniLed的显示面板，所述显示面板包括：第一基板、驱动层、MiniLed发光单元以及GOA电路，GOA电路设于面板的背面。本发明将驱动IC替换成GOA电路，减小了面板制程的成本。通过在基板的一面不同的区域制备驱动层以及GOA电路，然后切合基板形成两块，最后将两块基板的背面进行贴合，并通过金属线连接GOA电路以及驱动层，由于只需在基板的一面制作驱动层与GOA电路，所以本发明显示面板不会增加额外的制作成本。', '本发明提供的MiniLed的显示面板，所述显示面板包括：第一基板、驱动层、MiniLed发光单元以及GOA电路，GOA电路设于面板的背面。本发明将驱动IC替换成GOA电路，减小了面板制程的成本。通过在基板的一面不同的区域制备驱动层以及GOA电路，然后切合基板形成两块，最后将两块基板的背面进行贴合，并通过金属线连接GOA电路以及驱动层，由于只需在基板的一面制作驱动层与GOA电路，所以本发明显示面板不会增加额外的制作成本。', 'CN202010061390.9', 1579363200, 'CN111243495A', 1591286400, 1591286400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 0, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 6, 2, 2, 2, 0, NULL, '916', NULL, NULL, NULL, 'CN108681118A | CN109461386A | CN109962095A | CN110310575A | CN110390900A | JP2007165738A', 'WO2021147601A1 | WO2022022268A1', NULL, 1, '\\20220510\\c9ebb6434c04440a84f3d8e270b305c1.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41006, 41008, 41007, 1);
INSERT INTO `os_patent` VALUES (23812, '一种微型显示面板、制程方法及拼接显示面板', '一种微型显示面板、制程方法及拼接显示面板', 'CN111244126A', '本申请实施例提供微型显示面板、制程方法及拼接显示面板，微型显示面板包括玻璃基板、薄膜晶体管层、微型发光二极管层、第一垫片以及第二垫片，玻璃基板具有相对设置的第一面和第二面，以及相对设置的第一端和第二端，薄膜晶体管层设置在第一面，薄膜晶体管层靠近第一端的端部与第一端对齐，微型发光二极管层部分设置在薄膜晶体管层远离玻璃基板的一面，第一垫片设置在薄膜晶体管层远离玻璃基板的一面，且靠近第一端的端部与第一端对齐，第一垫片与微型发光二极管层处于同一层，第二垫片设置在第一垫片上，第二垫片靠近第一端的端部与第一端对齐，另一端与封装层连接，其中，第一垫片和第二垫片固定连接。可以减小拼接显示面板拼装缝隙。', '本申请实施例提供微型显示面板、制程方法及拼接显示面板，微型显示面板包括玻璃基板、薄膜晶体管层、微型发光二极管层、第一垫片以及第二垫片，玻璃基板具有相对设置的第一面和第二面，以及相对设置的第一端和第二端，薄膜晶体管层设置在第一面，薄膜晶体管层靠近第一端的端部与第一端对齐，微型发光二极管层部分设置在薄膜晶体管层远离玻璃基板的一面，第一垫片设置在薄膜晶体管层远离玻璃基板的一面，且靠近第一端的端部与第一端对齐，第一垫片与微型发光二极管层处于同一层，第二垫片设置在第一垫片上，第二垫片靠近第一端的端部与第一端对齐，另一端与封装层连接，其中，第一垫片和第二垫片固定连接。可以减小拼接显示面板拼装缝隙。', 'CN202010062587.4', 1579449600, 'CN111244126A', 1591286400, 1591286400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 0, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 6, 1, 1, 1, 0, NULL, '916', NULL, NULL, NULL, 'CN108258158A | CN109461386A | CN109962095A | CN110503898A | CN110707120A', 'CN112382212A', NULL, 1, '\\20220510\\e2323cb2f7734331b3eee4e59a0db953.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41009, 41011, 41010, 1);
INSERT INTO `os_patent` VALUES (23813, '一种显示装置', '一种显示装置', 'CN111258101A', '本发明提供一种显示装置，区分为摄像头放置区及非摄像头放置区，包括背光模组、显示模组、以及摄像头，所述显示模组位于所述背光模组上，所述显示模组包括对盒设置的阵列基板和彩膜基板、以及位于所述彩膜基板背向所述阵列基板一侧且对应于所述显示装置的所述摄像头放置区内的微型LED模组；其中，所述显示模组对应于所述显示装置的所述摄像头放置区内设置有指纹传感器，所述指纹传感器的感测单元在所述彩膜基板上的投影与所述微型LED模组中的微型LED单元无重叠，可实现全屏显示功能，屏下光学指纹解锁功能，以及拍照功能。', '本发明提供一种显示装置，区分为摄像头放置区及非摄像头放置区，包括背光模组、显示模组、以及摄像头，所述显示模组位于所述背光模组上，所述显示模组包括对盒设置的阵列基板和彩膜基板、以及位于所述彩膜基板背向所述阵列基板一侧且对应于所述显示装置的所述摄像头放置区内的微型LED模组；其中，所述显示模组对应于所述显示装置的所述摄像头放置区内设置有指纹传感器，所述指纹传感器的感测单元在所述彩膜基板上的投影与所述微型LED模组中的微型LED单元无重叠，可实现全屏显示功能，屏下光学指纹解锁功能，以及拍照功能。', 'CN202010190025.8', 1584460800, 'CN111258101A', 1591632000, 1591632000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 15, 5, 5, 5, 0, NULL, '916', NULL, NULL, NULL, 'CN108171178A | CN108538206A | CN108986678A | CN109164648A | CN109375412A | CN109445171A | CN109445182A | CN110068947A | CN110133788A | CN110222620A | CN110231735A | CN110376788A | CN110632789A | CN110796055A | CN110850626A', 'CN111915996A | CN111915996B | CN112015004A | WO2021248783A1 | WO2021253495A1', NULL, 1, '\\20220510\\0e0af516e3404a7e9b7b5bfe8025e5b8.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41012, 41014, 41013, 4);
INSERT INTO `os_patent` VALUES (23814, '一种显示面板及其制备方法', '一种显示面板及其制备方法', 'CN111261656A', '本发明提供一种显示面板，包括：第一玻璃基板、位于所述第一玻璃基板上的薄膜晶体管层、位于所述薄膜晶体管层上且阵列排布的黑色矩阵、位于所述薄膜晶体管层上且位于所述黑色矩阵之间的第一颜色微型LED、位于所述第一颜色微型LED上的像素层以及位于所述黑色矩阵和所述像素层上的第二玻璃基板。其中，所述第一颜色微型LED的高度小于所述黑色矩阵的高度。防止不同微型LED之间的光发生串扰，又可充当像素层的像素限定层，还可防止不同子像素之间发生串扰。', '本发明提供一种显示面板，包括：第一玻璃基板、位于所述第一玻璃基板上的薄膜晶体管层、位于所述薄膜晶体管层上且阵列排布的黑色矩阵、位于所述薄膜晶体管层上且位于所述黑色矩阵之间的第一颜色微型LED、位于所述第一颜色微型LED上的像素层以及位于所述黑色矩阵和所述像素层上的第二玻璃基板。其中，所述第一颜色微型LED的高度小于所述黑色矩阵的高度。防止不同微型LED之间的光发生串扰，又可充当像素层的像素限定层，还可防止不同子像素之间发生串扰。', 'CN202010052489.2', 1579190400, 'CN111261656A', 1591632000, 1591632000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 0, 4, 4, 4, 0, NULL, '916', NULL, NULL, NULL, NULL, 'CN112578594A | CN112578597A | CN113013310A | CN113451217A', NULL, 1, '\\20220510\\e9071c4f297442479ee5e4ef4830096b.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41015, 41017, 41016, 3);
INSERT INTO `os_patent` VALUES (23815, '显示面板及显示装置', '显示面板及显示装置', 'CN111261657A', '本发明提供了一种显示面板及显示装置，该显示面板包括：基板、驱动层、MiniLED发光单元、第一封装胶以及薄膜封装层。本发明的显示面板为大尺寸的MiniLED发光，通过设置一薄膜封装层，该薄膜封装层由有机层以及无机层堆叠而成。通过薄膜封装层的隔绝水氧的能力，可以有效的弥补硅胶材料的封装胶的缺陷，提高面板的稳定性。', '本发明提供了一种显示面板及显示装置，该显示面板包括：基板、驱动层、MiniLED发光单元、第一封装胶以及薄膜封装层。本发明的显示面板为大尺寸的MiniLED发光，通过设置一薄膜封装层，该薄膜封装层由有机层以及无机层堆叠而成。通过薄膜封装层的隔绝水氧的能力，可以有效的弥补硅胶材料的封装胶的缺陷，提高面板的稳定性。', 'CN202010068621.9', 1579536000, 'CN111261657A', 1591632000, 1591632000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\871e1723e32046cc8a63146194d2638d.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41018, 41020, 41019, 1);
INSERT INTO `os_patent` VALUES (23816, '微型发光二极管显示面板及微型发光二极管的转印方法', '微型发光二极管显示面板及微型发光二极管的转印方法', 'CN111261658A', '本申请提供一种微型发光二极管显示面板及微型发光二极管的转印方法，该微型发光二极管显示面板包括：驱动基板，其包括层叠的薄膜晶体管阵列层和底部电极；微型发光二极管带间隔的设置于驱动基板上，每个微型发光二极管带上包括至少两个微型发光二极管；微型发光二极管与底部电极一一对应电连接，且微型发光二极管通过底部电极与薄膜晶体管阵列层中的薄膜晶体管电连接；相邻两行底部电极之间和/或相邻两列底部电极之间设置有遮光层，微型发光二极管带或微型发光二极管位于相邻两个遮光层之间。本申请通过在驱动基板上设置遮光层，从而解决采用传统转印方法制备的微型发光二极管显示面板产生漏光，进而导致混色的问题。', '本申请提供一种微型发光二极管显示面板及微型发光二极管的转印方法，该微型发光二极管显示面板包括：驱动基板，其包括层叠的薄膜晶体管阵列层和底部电极；微型发光二极管带间隔的设置于驱动基板上，每个微型发光二极管带上包括至少两个微型发光二极管；微型发光二极管与底部电极一一对应电连接，且微型发光二极管通过底部电极与薄膜晶体管阵列层中的薄膜晶体管电连接；相邻两行底部电极之间和/或相邻两列底部电极之间设置有遮光层，微型发光二极管带或微型发光二极管位于相邻两个遮光层之间。本申请通过在驱动基板上设置遮光层，从而解决采用传统转印方法制备的微型发光二极管显示面板产生漏光，进而导致混色的问题。', 'CN202010085024.7', 1581264000, 'CN111261658A', 1591632000, 1591632000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 20, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 3, 3, 3, 0, NULL, '916', NULL, NULL, NULL, NULL, 'CN111933633A | CN111933633B | WO2022027351A1', NULL, 1, '\\20220510\\da1e7a73c7b448c2b2d3a1b48acc54c3.png', NULL, NULL, 1, NULL, NULL, 14, NULL, NULL, NULL, 41021, 41023, 41022, 2);
INSERT INTO `os_patent` VALUES (23817, '灯板、背光模组以及显示装置', '灯板、背光模组以及显示装置', 'CN111290174A', '本发明公开了一种灯板、背光模组以及显示装置，所述灯板包括若干拼板；每一拼板设有若干发光芯片；所述灯板包括若干分区，每一分区内的发光芯片的数量相同。本发明的技术效果在于，能对灯板进行均匀分区，使得每一分区内发光芯片的发光效果相同，即能提高灯板的发光均一性，进一步提高显示面板的发光均一性。', '本发明公开了一种灯板、背光模组以及显示装置，所述灯板包括若干拼板；每一拼板设有若干发光芯片；所述灯板包括若干分区，每一分区内的发光芯片的数量相同。本发明的技术效果在于，能对灯板进行均匀分区，使得每一分区内发光芯片的发光效果相同，即能提高灯板的发光均一性，进一步提高显示面板的发光均一性。', 'CN202010241521.1', 1585584000, 'CN111290174A', 1592236800, 1592236800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 3, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 6, 2, 2, 2, 0, NULL, '916', NULL, NULL, NULL, 'CN106647041A | CN107966825A | CN109326226A | CN109656058A | US20090302780A1 | US20100079977A1', 'CN111785182A | CN111816091A', NULL, 1, '\\20220510\\86c4ca73b45f49aab48ac1d52c5f797e.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41024, 41026, 41025, 2);
INSERT INTO `os_patent` VALUES (23818, '显示装置', '显示装置', 'CN111308770A', '本发明公开了一种显示装置，包括光学膜层，包括一通孔；显示面板，设于所述光学膜层一侧的表面；所述显示面板包括一透明区，与所述通孔相对设置；摄像头，包括镜头，插入至所述通孔内，且朝向所述透明区；以及若干LED芯片，环绕所述镜头均匀设于所述通孔内，且设于所述摄像头与所述透明区之间。本发明的技术效果在于，当LED芯片断电时，摄像区处于采光状态，能正常拍摄，当LED芯片通电时，摄像区处于显示状态，实现全面屏功能。', '本发明公开了一种显示装置，包括光学膜层，包括一通孔；显示面板，设于所述光学膜层一侧的表面；所述显示面板包括一透明区，与所述通孔相对设置；摄像头，包括镜头，插入至所述通孔内，且朝向所述透明区；以及若干LED芯片，环绕所述镜头均匀设于所述通孔内，且设于所述摄像头与所述透明区之间。本发明的技术效果在于，当LED芯片断电时，摄像区处于采光状态，能正常拍摄，当LED芯片通电时，摄像区处于显示状态，实现全面屏功能。', 'CN202010120007.2', 1582646400, 'CN111308770A', 1592496000, 1592496000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 18, 5, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 8, 3, 3, 3, 0, NULL, '916', NULL, NULL, NULL, 'CN106371187A | CN107087089A | CN110161749A | CN110231735A | CN110286521A | CN110456571A | CN207264062U | US20190158713A1', 'CN111951192A | CN112951086A | CN112951086B', NULL, 1, '\\20220510\\0a0afea1370e4a5f832b606b4520c549.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41027, 41029, 41028, 2);
INSERT INTO `os_patent` VALUES (23819, 'MiniLED背光基板及其切割方法、MiniLED基板', 'MiniLED背光基板及其切割方法、MiniLED基板', 'CN111308780A', '本发明公开了一种MiniLED背光基板的切割方法、MiniLED背光基板及其MiniLED基板，包括：步骤S1、将成膜完成后的MiniLED背光基板，进行成盒制程；步骤S2、将成盒后的所述MiniLED背光基板进行切割，制备出小板MiniLED背光基板；步骤S3、将所述小板MiniLED背光基板进行去盒处理；步骤S4、将去盒后的所述小板MiniLED背光基板进行打包，并进行后续制程。使用所述MiniLED背光基板的切割方法可以有效解决MiniLED基板在切割制程中膜面受损及金属板腐蚀的问题，且所述MiniLED背光基板的切割方法简单易行。', '本发明公开了一种MiniLED背光基板的切割方法、MiniLED背光基板及其MiniLED基板，包括：步骤S1、将成膜完成后的MiniLED背光基板，进行成盒制程；步骤S2、将成盒后的所述MiniLED背光基板进行切割，制备出小板MiniLED背光基板；步骤S3、将所述小板MiniLED背光基板进行去盒处理；步骤S4、将去盒后的所述小板MiniLED背光基板进行打包，并进行后续制程。使用所述MiniLED背光基板的切割方法可以有效解决MiniLED基板在切割制程中膜面受损及金属板腐蚀的问题，且所述MiniLED背光基板的切割方法简单易行。', 'CN202010146626.9', 1583337600, 'CN111308780A', 1592496000, 1592496000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 3, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 7, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 5, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN108535917A | CN109920752A | CN204874381U | CN207105032U | KR1020120038947A', NULL, NULL, 1, '\\20220510\\45d6fdc624154013a3ca82d87e02fd2a.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41030, 41032, 41031, 2);
INSERT INTO `os_patent` VALUES (23820, '显示面板及其制作方法、显示装置', '显示面板及其制作方法、显示装置', 'CN111312090A', '本申请公开了一种显示面板及其制作方法、显示装置。该显示面板包括：第一基板，包括位于该第一基板的第一边缘的第一引线及位于该第一基板的第二边缘的第二引线；第二基板，包括位于该第二基板的第三边缘的第三引线及位于该第二基板的第四边缘的第四引线；以及连接该第一引线与该第四引线、以及连接该第二引线与该第三引线的连接线。本申请通过在显示面板的背面设置扇出走线，以及通过引线、连接线将数据线及扫描线与扇出走线电连接，实现了显示面板的无边框设计，便于显示面板的拼接，减少了拼接屏的黑色非显示区，提高了用户体验。', '本申请公开了一种显示面板及其制作方法、显示装置。该显示面板包括：第一基板，包括位于该第一基板的第一边缘的第一引线及位于该第一基板的第二边缘的第二引线；第二基板，包括位于该第二基板的第三边缘的第三引线及位于该第二基板的第四边缘的第四引线；以及连接该第一引线与该第四引线、以及连接该第二引线与该第三引线的连接线。本申请通过在显示面板的背面设置扇出走线，以及通过引线、连接线将数据线及扫描线与扇出走线电连接，实现了显示面板的无边框设计，便于显示面板的拼接，减少了拼接屏的黑色非显示区，提高了用户体验。', 'CN201911080879.4', 1573056000, 'CN111312090A', 1592496000, 1592496000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 14, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 6, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN101587670A | CN103217845A | CN104035253A | CN108957878A | CN108957880A | CN110379322A', NULL, NULL, 1, '\\20220510\\59b26e7a8ac244519de2eb76209483bf.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41033, 41035, 41034, 3);
INSERT INTO `os_patent` VALUES (23821, '微发光二极管阵列基板及其制备方法', '微发光二极管阵列基板及其制备方法', 'CN111312743A', '本发明公开了一种微发光二极管阵列基板及其制备方法。本发明通过在连接层制备完成后，再形成一层钝化层，保护连接层不会与后续制程中的有机溶剂或有机膜发生反应而出现残留或者缺失，并且利用像素定义层或黑矩阵作为自对准掩膜板，对钝化层进行刻蚀，从而保留像素电极对应位置的连接层。', '本发明公开了一种微发光二极管阵列基板及其制备方法。本发明通过在连接层制备完成后，再形成一层钝化层，保护连接层不会与后续制程中的有机溶剂或有机膜发生反应而出现残留或者缺失，并且利用像素定义层或黑矩阵作为自对准掩膜板，对钝化层进行刻蚀，从而保留像素电极对应位置的连接层。', 'CN202010194115.4', 1584547200, 'CN111312743A', 1592496000, 1592496000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 14, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\34e0950497c742368fe25c46c5f4a109.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 41036, 41038, 41037, 1);
INSERT INTO `os_patent` VALUES (23822, '背板单元及其制造方法、显示装置', '背板单元及其制造方法、显示装置', 'CN111326082B', '本申请提供一种背板单元及其制造方法、显示装置，制造方法包括如下步骤：于阵列基板上形成光阻层，阵列基板包括基板、阵列层以及发光元件，阵列层形成于基板上，发光元件设置于阵列层上，光阻层形成于阵列层以及发光元件远离基板的一侧；至少对光阻层对应发光元件的部分进行曝光；至少于光阻层远离阵列基板的一侧形成遮光层，遮光层至少使发光元件侧面部分显露；利用剥离液对发光元件上的光阻层进行侧面剥离，得背板单元。利用发光元件高度大于阵列层厚度，发光元件上光阻层侧面显露，利用剥离液对发光元件上曝光的光阻层进行侧面渗透剥离，剥离液不会腐蚀金属，避免传统显影液对黑色有机层显影时对裸露金属层腐蚀。', '本申请提供一种背板单元及其制造方法、显示装置，制造方法包括如下步骤：于阵列基板上形成光阻层，阵列基板包括基板、阵列层以及发光元件，阵列层形成于基板上，发光元件设置于阵列层上，光阻层形成于阵列层以及发光元件远离基板的一侧；至少对光阻层对应发光元件的部分进行曝光；至少于光阻层远离阵列基板的一侧形成遮光层，遮光层至少使发光元件侧面部分显露；利用剥离液对发光元件上的光阻层进行侧面剥离，得背板单元。利用发光元件高度大于阵列层厚度，发光元件上光阻层侧面显露，利用剥离液对发光元件上曝光的光阻层进行侧面渗透剥离，剥离液不会腐蚀金属，避免传统显影液对黑色有机层显影时对裸露金属层腐蚀。', 'CN202010291073.6', 1586793600, 'CN111326082B', 1627920000, 1592841600, NULL, 1627920000, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 4, NULL, NULL, 25, 0, 0, 0, 0, NULL, '916', NULL, '陈学平', NULL, 'CN103123896A | CN103700688A | CN104898886A | CN105609528A | CN106206656A | CN106653768A | CN107024835A | CN107104108A | CN107689345A | CN107785382A | CN107968096A | CN109065455A | CN109791451A | CN110187614A | CN110391261A | CN110494985A | CN110707197A | CN110838497A | CN110989859A | CN110993564A | CN206627737U | EP0951073B1 | US10510815B2 | US20130146880A1 | US20190036084A1', NULL, NULL, 1, '\\20220510\\33489a3ad3f2401abdea953ce039cec2.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41039, 41041, 41040, 4);
INSERT INTO `os_patent` VALUES (23823, 'MiniLED背光结构及显示装置', 'MiniLED背光结构及显示装置', 'CN111326537A', '本申请提供一种MiniLED背光结构及显示装置。MiniLED背光结构包括：一阵列基板；一分布式布拉格反射镜层，所述分布式布拉格反射镜层设置在所述阵列基板上，所述分布式布拉格反射镜层包括多个第一反射膜层以及多个第二反射膜层交替叠设形成，所述第一反射膜层的折射率大于所述第二反射膜层的折射率；所述分布式布拉格反射镜层开设有多个贯穿至所述阵列基板的安装孔；多个LED发光单元，所述多个LED发光单元设置于所述阵列基板上并位于所述安装孔中。本申请可以提高LED出射到基板的光反射率。', '本申请提供一种MiniLED背光结构及显示装置。MiniLED背光结构包括：一阵列基板；一分布式布拉格反射镜层，所述分布式布拉格反射镜层设置在所述阵列基板上，所述分布式布拉格反射镜层包括多个第一反射膜层以及多个第二反射膜层交替叠设形成，所述第一反射膜层的折射率大于所述第二反射膜层的折射率；所述分布式布拉格反射镜层开设有多个贯穿至所述阵列基板的安装孔；多个LED发光单元，所述多个LED发光单元设置于所述阵列基板上并位于所述安装孔中。本申请可以提高LED出射到基板的光反射率。', 'CN202010099435.1', 1581955200, 'CN111326537A', 1592841600, 1592841600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 0, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\e5c868da3e6544ae9d792b39df9b74fb.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41042, 41044, 41043, 1);
INSERT INTO `os_patent` VALUES (23824, '量子点显示面板及其制备方法', '量子点显示面板及其制备方法', 'CN111326562A', '本申请提供一种量子点显示面板及其制备方法，本申请中量子点显示面板包括彩膜基板、位于彩膜基板表面的像素定义层、位于像素定义层的像素定义区中的量子点光致转换膜、以及位于量子点光致转换膜下方的蓝光显示器件，由于所述像素定义层设置了垫高层和遮光层，确保了像素定义层的厚度大于或等于6um，有利于量子点光致转换膜中量子点粒子均匀固化，无缝隙地贴合于像素定义层侧面，避免量子点显示面板产生混光和漏光现象，从蓝光显示器件中出射蓝色光源，激发量子点光致转换膜，发出纯净光，纯净光透过色阻变成相应的色彩，从而实现出射光更柔和、更均匀、亮度更高，提高了显示器件色域和视角，从而提升量子点显示面板显示品质。', '本申请提供一种量子点显示面板及其制备方法，本申请中量子点显示面板包括彩膜基板、位于彩膜基板表面的像素定义层、位于像素定义层的像素定义区中的量子点光致转换膜、以及位于量子点光致转换膜下方的蓝光显示器件，由于所述像素定义层设置了垫高层和遮光层，确保了像素定义层的厚度大于或等于6um，有利于量子点光致转换膜中量子点粒子均匀固化，无缝隙地贴合于像素定义层侧面，避免量子点显示面板产生混光和漏光现象，从蓝光显示器件中出射蓝色光源，激发量子点光致转换膜，发出纯净光，纯净光透过色阻变成相应的色彩，从而实现出射光更柔和、更均匀、亮度更高，提高了显示器件色域和视角，从而提升量子点显示面板显示品质。', 'CN202010145352.1', 1583337600, 'CN111326562A', 1592841600, 1592841600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 0, 2, 2, 2, 0, NULL, '916', NULL, NULL, NULL, NULL, 'CN111710800A | WO2022047929A1', NULL, 1, '\\20220510\\b8ac4a145790486b92b5fad50fadcded.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41045, 41047, 41046, 3);
INSERT INTO `os_patent` VALUES (23825, '显示模组及显示装置', '显示模组及显示装置', 'CN111338127A', '本发明公开了一种显示模组及显示装置，该显示模组包括：液晶显示面板；Micro LED显示面板，设置于液晶显示面板的下方，与液晶显示面板相贴合，Micro LED显示面板仅显示白色；第一驱动芯片，与液晶显示面板相连，用于驱动液晶显示面板发光显示；第二驱动芯片，与Micro LED显示面板相连，用于驱动Micro LED显示面板发光显示。通过采用液晶显示面板和Micro LED显示面板贴合的双层面板设计，去掉背光模组，Micro LED显示面板同时起到背光模组的作用，减少了显示模组的能耗；Micro LED显示面板仅显示白色，通过控制Micro LED显示面板内子像素的发光显示，可以精细地调整液晶显示面板内每一颗像素所需的背光亮度，达到亮度的精准区分，从而显著提高双层显示面板的对比度。', '本发明公开了一种显示模组及显示装置，该显示模组包括：液晶显示面板；Micro LED显示面板，设置于液晶显示面板的下方，与液晶显示面板相贴合，Micro LED显示面板仅显示白色；第一驱动芯片，与液晶显示面板相连，用于驱动液晶显示面板发光显示；第二驱动芯片，与Micro LED显示面板相连，用于驱动Micro LED显示面板发光显示。通过采用液晶显示面板和Micro LED显示面板贴合的双层面板设计，去掉背光模组，Micro LED显示面板同时起到背光模组的作用，减少了显示模组的能耗；Micro LED显示面板仅显示白色，通过控制Micro LED显示面板内子像素的发光显示，可以精细地调整液晶显示面板内每一颗像素所需的背光亮度，达到亮度的精准区分，从而显著提高双层显示面板的对比度。', 'CN202010275699.8', 1586361600, 'CN111338127A', 1593100800, 1593100800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 9, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN101295096A | CN101431051A | CN105551444A | CN106094334A | CN106707533A | CN107331367A | CN109119439A | CN206557511U | US20170133818A1', NULL, NULL, 1, '\\20220510\\9e01fb9d47794b8b8c40ca2f0fc1e638.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41048, 41050, 41049, 3);
INSERT INTO `os_patent` VALUES (23826, '一种背光模组及显示装置', '一种背光模组及显示装置', 'CN111338129A', '本申请实施例提供一种背光模组及显示装置，本申请实施例所提供的背光模组包括若干背光单元，所述背光单元包括背板、发光部、反射透镜、量子点薄膜以及封装边框，背板具有相对设置的第一面和第二面，发光部设置在所述第一面，反射透镜设置在所述第一面上，且与所述发光部对应，所述反射透镜用于反射所述发光部的光线，量子点薄膜设置在所述反射透镜远离所述背板的一侧，封装边框所述封装边框将背板、发光部、反射透镜以及量子点薄膜封装在封装边框内。本申请将背光模组形成多个独立背光单元，每一个独立的背光单元可以形成背光源，通过独立的控制背光单元，消除相邻单元之间的背光串扰，提高对比度及显示均匀性。', '本申请实施例提供一种背光模组及显示装置，本申请实施例所提供的背光模组包括若干背光单元，所述背光单元包括背板、发光部、反射透镜、量子点薄膜以及封装边框，背板具有相对设置的第一面和第二面，发光部设置在所述第一面，反射透镜设置在所述第一面上，且与所述发光部对应，所述反射透镜用于反射所述发光部的光线，量子点薄膜设置在所述反射透镜远离所述背板的一侧，封装边框所述封装边框将背板、发光部、反射透镜以及量子点薄膜封装在封装边框内。本申请将背光模组形成多个独立背光单元，每一个独立的背光单元可以形成背光源，通过独立的控制背光单元，消除相邻单元之间的背光串扰，提高对比度及显示均匀性。', 'CN202010285494.8', 1586707200, 'CN111338129A', 1593100800, 1593100800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 7, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN102347428A | CN103645585A | CN106773289A | CN206497278U | CN208537866U | CN209525546U | WO2014020011A1', NULL, NULL, 1, '\\20220510\\9b5f1948cbd542dbbb41b422eff73f6f.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41051, 41053, 41052, 1);
INSERT INTO `os_patent` VALUES (23827, 'LED芯片转移系统及LED芯片的转移方法', 'LED芯片转移系统及LED芯片的转移方法', 'CN111341710A', '本申请提供一种LED芯片转移系统及LED芯片的转移方法，该LED芯片转移系统包括载台、转移机构和喷涂机构，载台用于放置待转移的LED芯片；转移机构设置在载台上，转移机构包括基板和多个设置在基板上的转移部件，转移部件用于转移LED芯片；喷涂机构用于对LED芯片喷涂粘性液；其中，转移部件包括转移本体和吸附结构，转移本体设置在基板上，吸附结构设置在转移本体上，且用于吸附粘性液。本申请实现了Micro LED芯片的高效和精确转移。', '本申请提供一种LED芯片转移系统及LED芯片的转移方法，该LED芯片转移系统包括载台、转移机构和喷涂机构，载台用于放置待转移的LED芯片；转移机构设置在载台上，转移机构包括基板和多个设置在基板上的转移部件，转移部件用于转移LED芯片；喷涂机构用于对LED芯片喷涂粘性液；其中，转移部件包括转移本体和吸附结构，转移本体设置在基板上，吸附结构设置在转移本体上，且用于吸附粘性液。本申请实现了Micro LED芯片的高效和精确转移。', 'CN202010170922.2', 1583942400, 'CN111341710A', 1593100800, 1593100800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 20, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 5, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN107833526A | CN108767092A | CN109891569A | CN110098289A | JP2013187529A', NULL, NULL, 1, '\\20220510\\2a9facc49cae4c7d90da5204678a9577.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41054, 41056, 41055, 1);
INSERT INTO `os_patent` VALUES (23828, '一种阵列基板、显示面板及显示面板的制作方法', '一种阵列基板、显示面板及显示面板的制作方法', 'CN111341792A', '本发明公开了一种阵列基板、显示面板及显示面板的制作方法。显示面板包括阵列基板以及发光元件。阵列基板包括从下至上依次层叠设置的衬底层、驱动电路层以及覆盖层；覆盖层为灰色吸光材料，用于吸收对环境光及驱动电路层的反射光。显示面板的制作方法包括步骤：制作阵列基板以及设置发光元件。本发明通过在阵列基板上制作一层覆盖层，覆盖层不仅可以吸收环境光及发光元件发出的光，无需增加偏光片就可以大大改善显示面板出现串色、混色、对比度差等问题，使得显示面板的黑态更黑，从而提高了对比度。同时覆盖层的制作工艺简单，减少了制作成本，极大地提高了产品的竞争力。', '本发明公开了一种阵列基板、显示面板及显示面板的制作方法。显示面板包括阵列基板以及发光元件。阵列基板包括从下至上依次层叠设置的衬底层、驱动电路层以及覆盖层；覆盖层为灰色吸光材料，用于吸收对环境光及驱动电路层的反射光。显示面板的制作方法包括步骤：制作阵列基板以及设置发光元件。本发明通过在阵列基板上制作一层覆盖层，覆盖层不仅可以吸收环境光及发光元件发出的光，无需增加偏光片就可以大大改善显示面板出现串色、混色、对比度差等问题，使得显示面板的黑态更黑，从而提高了对比度。同时覆盖层的制作工艺简单，减少了制作成本，极大地提高了产品的竞争力。', 'CN202010168803.3', 1583942400, 'CN111341792A', 1593100800, 1593100800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 3, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\d1f82a9f33764db4b9de2fb73944f579.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41057, 41059, 41058, 3);
INSERT INTO `os_patent` VALUES (23829, 'Micro LED显示装置', 'Micro LED显示装置', 'CN111369903A', '本申请公开了一种Micro LED显示装置，包括相对设置的驱动基板和彩膜基板，所述驱动基板面向所述彩膜基板的一面上设有呈阵列排布的多个蓝光Micro LED以及设置于所述驱动基板上并覆盖多个所述蓝光Micro LED的封装层，所述彩膜基板面向所述驱动基板的一面上设有彩色滤光层，所述封装层面向所述彩膜基板的一面上设置有图案化的凸形构件。本申请实施例所提供的Micro LED显示装置，能够减少Micro LED与三色RGB像素之间的色彩串扰，进一步增加了Micro LED显示装置的出光效率，更进一步提高了Micro LED显示装置的显示亮度。', '本申请公开了一种Micro LED显示装置，包括相对设置的驱动基板和彩膜基板，所述驱动基板面向所述彩膜基板的一面上设有呈阵列排布的多个蓝光Micro LED以及设置于所述驱动基板上并覆盖多个所述蓝光Micro LED的封装层，所述彩膜基板面向所述驱动基板的一面上设有彩色滤光层，所述封装层面向所述彩膜基板的一面上设置有图案化的凸形构件。本申请实施例所提供的Micro LED显示装置，能够减少Micro LED与三色RGB像素之间的色彩串扰，进一步增加了Micro LED显示装置的出光效率，更进一步提高了Micro LED显示装置的显示亮度。', 'CN202010268484.3', 1586275200, 'CN111369903A', 1593705600, 1593705600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 10, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN102629622A | CN106129260A | CN106773306A | CN108417598A | CN108898966A | CN109256456A | CN109309154A | CN110323353A | CN110473892A | CN110556394A', NULL, NULL, 1, '\\20220510\\796186a2632b4099a2253c757735e667.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41060, 41062, 41061, 1);
INSERT INTO `os_patent` VALUES (23830, '显示装置和终端', '显示装置和终端', 'CN111369934B', '本申请实施例提供一种显示装置和终端，显示装置中多个子像素形成沿第一方向交替排列的第一像素单元和第二像素单元，各像素单元均包括至少一行子像素，控制模块用于根据获取到的控制参数，控制显示装置进入节能模式，在节能模式中，控制模块用于，控制第一像素驱动电路在奇数显示帧内驱动第一像素单元中子像素发光，在偶数显示帧内侦测第一驱动单元的第一阈值电压，且控制第二像素驱动电路在偶数显示帧内驱动第二像素单元中子像素发光，在奇数显示帧内侦测第二驱动单元的第二阈值电压。本申请的显示装置在节能模式下控制当前显示帧内一部分子像素发光，另一部分子像素对应的像素驱动电路进行阈值电压侦测，使能耗降低且侦测时间充足，补偿效果好。', '本申请实施例提供一种显示装置和终端，显示装置中多个子像素形成沿第一方向交替排列的第一像素单元和第二像素单元，各像素单元均包括至少一行子像素，控制模块用于根据获取到的控制参数，控制显示装置进入节能模式，在节能模式中，控制模块用于，控制第一像素驱动电路在奇数显示帧内驱动第一像素单元中子像素发光，在偶数显示帧内侦测第一驱动单元的第一阈值电压，且控制第二像素驱动电路在偶数显示帧内驱动第二像素单元中子像素发光，在奇数显示帧内侦测第二驱动单元的第二阈值电压。本申请的显示装置在节能模式下控制当前显示帧内一部分子像素发光，另一部分子像素对应的像素驱动电路进行阈值电压侦测，使能耗降低且侦测时间充足，补偿效果好。', 'CN202010272455.4', 1586361600, 'CN111369934B', 1617292800, 1593705600, NULL, 1617292800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 19, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 12, 0, 0, 0, 0, NULL, '916', NULL, '刘颖', NULL, 'CN101051446A | CN101231821A | CN103168324A | CN103886831A | CN104680982A | CN104732920A | CN105741784A | CN107093402A | CN110189704A | CN110956929A | US20140225938A1 | US20160037156A1', NULL, NULL, 1, '\\20220510\\ee45bf01368e4e07b0495dfe65274f18.png', NULL, NULL, 1, NULL, NULL, 14, NULL, NULL, NULL, 41063, 41065, 41064, 3);
INSERT INTO `os_patent` VALUES (23831, '显示面板和显示装置', '显示面板和显示装置', 'CN111370461A', '本申请公开了一种显示面板和显示装置，所述显示面板包括第一显示模组和第二显示模组；所述第一显示模组的背部设有用于安装光学传感器的电子元件区，所述第一显示模组包括显示区以及与所述显示区相邻设置的透光区，所述透光区与所述电子元件区对应设置；所述第二显示模组设置在所述透光区，且与所述第一显示模组的所述显示区相邻接；所述第二显示模组包括呈阵列分布的多个像素区；每个像素区设有自发光的微型发光单元，且任意相邻的两个所述微型发光单元间隔设置。本申请可以在为电子元件区提供透光条件的基础上实现全面显示功能。', '本申请公开了一种显示面板和显示装置，所述显示面板包括第一显示模组和第二显示模组；所述第一显示模组的背部设有用于安装光学传感器的电子元件区，所述第一显示模组包括显示区以及与所述显示区相邻设置的透光区，所述透光区与所述电子元件区对应设置；所述第二显示模组设置在所述透光区，且与所述第一显示模组的所述显示区相邻接；所述第二显示模组包括呈阵列分布的多个像素区；每个像素区设有自发光的微型发光单元，且任意相邻的两个所述微型发光单元间隔设置。本申请可以在为电子元件区提供透光条件的基础上实现全面显示功能。', 'CN202010225961.8', 1585152000, 'CN111370461A', 1593705600, 1593705600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 17, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 2, 2, 2, 0, NULL, '916', NULL, NULL, NULL, NULL, 'CN111915996A | CN111915996B', NULL, 1, '\\20220510\\7bf988e06a9c45aebaca792aa24f433a.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41066, 41068, 41067, 2);
INSERT INTO `os_patent` VALUES (23832, 'Micro-LED芯片坏点修复方法', 'Micro-LED芯片坏点修复方法', 'CN111370541A', '本申请提供了一种Micro‑LED芯片坏点修复方法。该修复方法包括：提供一基板，基板上的每个子像素区中设有主凹槽和备份凹槽；通过流体巨量转移方法将巨量的主芯片转移至基板，使每个子像素区中的主凹槽装载一个主芯片；检测所有的主芯片以找出存在坏点的子像素区；通过流体巨量转移方法将若干备份芯片转移至基板，使检测出坏点的每个子像素区中的备份凹槽装载一个备份芯片；其中，同一子像素区中的备份芯片和主芯片发出的光的颜色相同。本申请在修复过程中使用了流体巨量转移方法，因此，只需将包含若干备份芯片的悬浮液向基板设有备份凹槽的一面倾倒一次或少量几次即可完成修复，提高了修复效率。', '本申请提供了一种Micro‑LED芯片坏点修复方法。该修复方法包括：提供一基板，基板上的每个子像素区中设有主凹槽和备份凹槽；通过流体巨量转移方法将巨量的主芯片转移至基板，使每个子像素区中的主凹槽装载一个主芯片；检测所有的主芯片以找出存在坏点的子像素区；通过流体巨量转移方法将若干备份芯片转移至基板，使检测出坏点的每个子像素区中的备份凹槽装载一个备份芯片；其中，同一子像素区中的备份芯片和主芯片发出的光的颜色相同。本申请在修复过程中使用了流体巨量转移方法，因此，只需将包含若干备份芯片的悬浮液向基板设有备份凹槽的一面倾倒一次或少量几次即可完成修复，提高了修复效率。', 'CN202010312409.2', 1587312000, 'CN111370541A', 1593705600, 1593705600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 20, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 4, 5, 5, 5, 0, NULL, '916', NULL, NULL, NULL, 'CN108257516A | CN110034061A | CN110047785A | CN110137128A', 'CN111965866A | CN112002792A | CN112002792B | CN112289909A | CN112435594A', NULL, 1, '\\20220510\\c659f47b72dc4afc8aa35d3a37ed35b1.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41069, 41071, 41070, 2);
INSERT INTO `os_patent` VALUES (23833, '一种可卷曲柔性显示装置', '一种可卷曲柔性显示装置', 'CN111383538B', '本申请提供了一种可卷曲柔性显示装置，本申请柔性显示模组包裹有长条结构，该长条结构的材质为柔性硅胶类材料，且中间镶入了滑动阻力极小的万向球组件，搭配特殊的卷轴机构，同时卷轴对应的末端也设置有相应的万向球组件，取代现有的卷簧机构，由滑动变为滚动，减少了接触摩擦力，采用这种特殊的机构的可卷曲柔性显示装置可以大大减小摩擦力，改善常会出现卡顿、运动不顺畅等不良现象，同时可以改善中间不同状态下受到向内卷入的作用力大小不同的问题，提升用户体验。', '本申请提供了一种可卷曲柔性显示装置，本申请柔性显示模组包裹有长条结构，该长条结构的材质为柔性硅胶类材料，且中间镶入了滑动阻力极小的万向球组件，搭配特殊的卷轴机构，同时卷轴对应的末端也设置有相应的万向球组件，取代现有的卷簧机构，由滑动变为滚动，减少了接触摩擦力，采用这种特殊的机构的可卷曲柔性显示装置可以大大减小摩擦力，改善常会出现卡顿、运动不顺畅等不良现象，同时可以改善中间不同状态下受到向内卷入的作用力大小不同的问题，提升用户体验。', 'CN202010277128.8', 1586448000, 'CN111383538B', 1620316800, 1594051200, NULL, 1620316800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 12, 0, 0, 0, 0, NULL, '916', NULL, '肖南秋', NULL, 'CN103514809A | CN106205396A | CN107492309A | CN107919063A | CN110047384A | CN203746358U | CN208368047U | CN209654559U | CN210270658U | US20160165717A1 | US20190064578A1 | US20190150300A1', NULL, NULL, 1, '\\20220510\\bbf06decc68d416ab4a524843b1948ae.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 41072, 41074, 41073, 4);
INSERT INTO `os_patent` VALUES (23834, '一种微型显示面板、制程方法及拼接显示面板', '一种微型显示面板、制程方法及拼接显示面板', 'CN111384080B', '本申请实施例中提供微型显示面板、制程方法及拼接显示面板，本申请实施例中微型显示面板包括玻璃基板、绝缘层、薄膜晶体管层以及微型发光二极管层，所述玻璃基板具有相对设置的第一面和第二面，以及相对设置的第一端和第二端，所述绝缘层设置在所述第一面，所述薄膜晶体管层设置在所述绝缘层远离所述玻璃基板的一面，所述微型发光二极管层设置在所述薄膜晶体管层远离所述绝缘层的一面；其中，所述绝缘层、薄膜晶体管层以及微型发光二极管层靠近所述第一端的一端朝向远离所述第二面的一侧弯折，所述绝缘层靠近所述第一端的端部与所述第一端之间具有空隙。本申请实施例可以防止在弯折过程中损坏绝缘层。', '本申请实施例中提供微型显示面板、制程方法及拼接显示面板，本申请实施例中微型显示面板包括玻璃基板、绝缘层、薄膜晶体管层以及微型发光二极管层，所述玻璃基板具有相对设置的第一面和第二面，以及相对设置的第一端和第二端，所述绝缘层设置在所述第一面，所述薄膜晶体管层设置在所述绝缘层远离所述玻璃基板的一面，所述微型发光二极管层设置在所述薄膜晶体管层远离所述绝缘层的一面；其中，所述绝缘层、薄膜晶体管层以及微型发光二极管层靠近所述第一端的一端朝向远离所述第二面的一侧弯折，所述绝缘层靠近所述第一端的端部与所述第一端之间具有空隙。本申请实施例可以防止在弯折过程中损坏绝缘层。', 'CN202010202337.6', 1584633600, 'CN111384080B', 1625500800, 1594051200, NULL, 1625500800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, '周忠堂', NULL, NULL, NULL, NULL, 1, '\\20220510\\5263c0c4406a4d76b5379d09705b1e94.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 41075, 41077, 41076, 4);
INSERT INTO `os_patent` VALUES (23835, '一种像素电路和显示面板', '一种像素电路和显示面板', 'CN111402788A', '本申请公开了一种像素电路，其包括发光器件、驱动单元、写入单元、存储单元以及补偿单元；本申请提供的像素电路，通过补偿单元能够动态线性调节驱动单元的阈值电压，且参考信号可以补偿阈值电压的正负漂移，解决了内部补偿电路仅能够补偿阈值电压单向漂移的问题。', '本申请公开了一种像素电路，其包括发光器件、驱动单元、写入单元、存储单元以及补偿单元；本申请提供的像素电路，通过补偿单元能够动态线性调节驱动单元的阈值电压，且参考信号可以补偿阈值电压的正负漂移，解决了内部补偿电路仅能够补偿阈值电压单向漂移的问题。', 'CN202010268321.5', 1586275200, 'CN111402788A', 1594310400, 1594310400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 13, 1, 1, 1, 3, NULL, '916', NULL, NULL, NULL, 'CN102890910A | CN104134680A | CN105741781A | CN106504700A | CN106504707A | CN107316614A | CN107424563A | CN107909966A | CN109285503A | JP2011112722A | KR1020140080728A | US20070052647A1 | WO2019064487A1', 'WO2022017042A1', 'Y.TAI等: \"Three-Transistor AMOLED Pixel Circuit With Threshold Voltage Compensation Function Using Dual-Gate IGZO TFT\", 《IEEE ELECTRON DEVICE LETTERS》 | 夏兴衡: \"基于金属氧化物TFT的AMOLED像素电路研究\", 《中国优秀硕士学位论文全文数据库·信息科技辑》 | 闫晓剑: \"AMOLED显示屏像素驱动电路的设计与实现\", 《中国优秀硕士学位论文全文数据库·信息科技辑》', 1, '\\20220510\\c9f42d63bb3c4892ac6d383f010a993e.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41078, 41080, 41079, 1);
INSERT INTO `os_patent` VALUES (23836, '柔性显示面板的制作方法', '柔性显示面板的制作方法', 'CN111430301A', '一种柔性显示面板的制作方法，首先采用第一柔性基板‑缓冲层‑第二柔性基板的三明治结构，然后再在所述第二柔性基板背离所述缓冲层的一侧形成薄膜晶体管层、发光器件层和薄膜封装层，最后再采用激光剥离技术将柔性基板和衬底基板进行分离；因此，其有益效果为：既可以降低制程工艺中柔性基板的翘曲风险，也可以解决激光剥离过程中，柔性显示面板受损甚至破片的风险。', '一种柔性显示面板的制作方法，首先采用第一柔性基板‑缓冲层‑第二柔性基板的三明治结构，然后再在所述第二柔性基板背离所述缓冲层的一侧形成薄膜晶体管层、发光器件层和薄膜封装层，最后再采用激光剥离技术将柔性基板和衬底基板进行分离；因此，其有益效果为：既可以降低制程工艺中柔性基板的翘曲风险，也可以解决激光剥离过程中，柔性显示面板受损甚至破片的风险。', 'CN202010248412.2', 1585670400, 'CN111430301A', 1594915200, 1594915200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 3, 1, 1, 1, 0, NULL, '916', NULL, NULL, NULL, 'CN104616596A | CN107195643A | CN107507929A', 'CN112002707A', NULL, 1, '\\20220510\\96e92c416c2d4b0280e5fb6dc6aa0230.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41081, 41083, 41082, 1);
INSERT INTO `os_patent` VALUES (23837, '阵列基板及显示装置', '阵列基板及显示装置', 'CN111430376A', '本申请提供一种阵列基板及显示装置，阵列基板包括基板、阵列层、钝化层以及发光元件，阵列层设置于基板上，发光元件设置于阵列层上，钝化层形成于阵列层远离基板的一侧，钝化层包括依次叠置的第一介质层、第二介质层以及第三介质层，第一介质层靠近阵列层，第三介质层远离阵列层，第一介质层的折射率与第二介质层的折射率相异，第二介质层的折射率与第三介质层的折射率相异。本申请钝化层起到反射作用，相对于涂覆白油作为一道单独制程，节省阵列基板的制造成本且提升阵列基板的良率。相对于传统反射层由两个不同折射率介质层组成，本申请钝化层对波长为450纳米的光的反射率更高。', '本申请提供一种阵列基板及显示装置，阵列基板包括基板、阵列层、钝化层以及发光元件，阵列层设置于基板上，发光元件设置于阵列层上，钝化层形成于阵列层远离基板的一侧，钝化层包括依次叠置的第一介质层、第二介质层以及第三介质层，第一介质层靠近阵列层，第三介质层远离阵列层，第一介质层的折射率与第二介质层的折射率相异，第二介质层的折射率与第三介质层的折射率相异。本申请钝化层起到反射作用，相对于涂覆白油作为一道单独制程，节省阵列基板的制造成本且提升阵列基板的良率。相对于传统反射层由两个不同折射率介质层组成，本申请钝化层对波长为450纳米的光的反射率更高。', 'CN202010275257.3', 1586361600, 'CN111430376A', 1594915200, 1594915200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 0, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\fc387c4a30744a4a96d35a769bda3d9f.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41084, 41086, 41085, 2);
INSERT INTO `os_patent` VALUES (23838, 'Micro LED显示单元及其Micro LED显示面板', 'Micro LED显示单元及其Micro LED显示面板', 'CN111462684A', '本申请公开了一种Micro LED显示单元，其包括驱动电路、发光器件以及光敏器件；驱动电路，用于提供驱动信号；本申请提供的Micro LED显示单元，通过驱动电路输出的驱动信号控制发光器件进行显示，光敏器件感应发光器件的发光强度，当发光强度达到阈值时，光敏器件将自行导通，能够自动调节流经发光器件的电流值，以平衡显示的均一性。', '本申请公开了一种Micro LED显示单元，其包括驱动电路、发光器件以及光敏器件；驱动电路，用于提供驱动信号；本申请提供的Micro LED显示单元，通过驱动电路输出的驱动信号控制发光器件进行显示，光敏器件感应发光器件的发光强度，当发光强度达到阈值时，光敏器件将自行导通，能够自动调节流经发光器件的电流值，以平衡显示的均一性。', 'CN202010420930.8', 1589731200, 'CN111462684A', 1595865600, 1595865600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 14, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN105427807A | CN106409233A | CN106997747A | CN107170409A | CN107211494A | CN109192140A | CN109616046A | CN109859691A | CN110136643A | JP1994061526A | JP2016118672A | TW200701169A | US10115713B2 | US20040257355A1', NULL, NULL, 1, '\\20220510\\a3138d0304dd4070a055b7dfa015cc28.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41087, 41089, 41088, 1);
INSERT INTO `os_patent` VALUES (23839, 'Micro LED阵列基板的修补装置以及micro LED阵列基板的修补方法', 'Micro LED阵列基板的修补装置以及micro LED阵列基板的修补方法', 'CN111463230A', '一种micro LED阵列基板的修补装置以及micro LED阵列基板的修补方法，micro LED阵列基板的修补装置包括：Micro LED阵列基板、测试电路、光学测量探测头以及激光转移头；测试电路包括设置在Micro LED阵列基板一侧的绝缘凸台层，分别设置在绝缘凸台层两侧，并与Micro LED阵列基板电性连接的两个测试头电极；以及设置在两个测试头电极背离绝缘层凸台一侧的Micro LED发光二极管，两个测试头电极分别电性连接Micro LED发光二极管的正电极和负电极；有益效果为：先检测Micro LED阵列基板上是否存在缺陷的Micro LED发光二极管，若存在，则采用激光转移头先软化存在缺陷的Micro LED发光二极管四周的光敏胶，再替换成正常的Micro LED发光二极管，节约时间成本，提高了效率以及转移micro LED阵列基板的良率。', '一种micro LED阵列基板的修补装置以及micro LED阵列基板的修补方法，micro LED阵列基板的修补装置包括：Micro LED阵列基板、测试电路、光学测量探测头以及激光转移头；测试电路包括设置在Micro LED阵列基板一侧的绝缘凸台层，分别设置在绝缘凸台层两侧，并与Micro LED阵列基板电性连接的两个测试头电极；以及设置在两个测试头电极背离绝缘层凸台一侧的Micro LED发光二极管，两个测试头电极分别电性连接Micro LED发光二极管的正电极和负电极；有益效果为：先检测Micro LED阵列基板上是否存在缺陷的Micro LED发光二极管，若存在，则采用激光转移头先软化存在缺陷的Micro LED发光二极管四周的光敏胶，再替换成正常的Micro LED发光二极管，节约时间成本，提高了效率以及转移micro LED阵列基板的良率。', 'CN202010283787.2', 1586707200, 'CN111463230A', 1595865600, 1595865600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 2, 2, 2, 0, NULL, '916', NULL, NULL, NULL, NULL, 'CN112435594A | CN113451163A', NULL, 1, '\\20220510\\ba15e1c41c56468dbf37f45ad991d4d3.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41090, 41092, 41091, 1);
INSERT INTO `os_patent` VALUES (23840, '显示面板及其制备方法', '显示面板及其制备方法', 'CN111463231A', '本申请提供一种显示面板及其制备方法，所述显示面板包括基板、反射层、薄膜晶体管和迷你发光二极管，所述反射层覆盖所述基板，所述反射层包括若干第一分层和若干第二分层，每一所述第一分层和每一所述第二分层依次交替层叠设置，所述第一分层的折射率和所述第二分层的折射率不同，所述薄膜晶体管设置于所述反射层上，所述迷发光二极管设置于所述薄膜晶体管上。在本申请中，将薄膜晶体管设置于所述反射层上，进而将进入背光源中的紫外光反射掉，进而降低了混光对薄膜晶体管器件的干扰，并提高发光二极管的光利用率。', '本申请提供一种显示面板及其制备方法，所述显示面板包括基板、反射层、薄膜晶体管和迷你发光二极管，所述反射层覆盖所述基板，所述反射层包括若干第一分层和若干第二分层，每一所述第一分层和每一所述第二分层依次交替层叠设置，所述第一分层的折射率和所述第二分层的折射率不同，所述薄膜晶体管设置于所述反射层上，所述迷发光二极管设置于所述薄膜晶体管上。在本申请中，将薄膜晶体管设置于所述反射层上，进而将进入背光源中的紫外光反射掉，进而降低了混光对薄膜晶体管器件的干扰，并提高发光二极管的光利用率。', 'CN202010285188.4', 1586707200, 'CN111463231A', 1595865600, 1595865600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\72f21cc7c4f4460399dbf8e03397fc24.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41093, 41095, 41094, 2);
INSERT INTO `os_patent` VALUES (23841, '显示面板及其制备方法', '显示面板及其制备方法', 'CN111463232A', '本申请提供一种显示面板及其制备方法，所述显示面板包括基板、薄膜晶体管、反射层和迷你发光二极管，所述薄膜晶体管设置于所述基板上，所述反射层设置于所述薄膜晶体管上，所述反射层包括通孔，所述通孔贯穿所述反射层以暴露所述薄膜晶体管，所述反射层包括若干第一分层和若干第二分层，每一所述第一分层和每一所述第二分层依次交替层叠设置，所述第一分层的折射率和所述第二分层的折射率不同，所述迷你发光二极管设置于所述通孔中以电连接所述薄膜晶体管。在本申请中，将反射层设置于薄膜晶体管上，进而将进入背光源中紫外光反射掉，进而降低了混光对薄膜晶体管器件的干扰，进而提高了迷你发光二极管的光利用率。', '本申请提供一种显示面板及其制备方法，所述显示面板包括基板、薄膜晶体管、反射层和迷你发光二极管，所述薄膜晶体管设置于所述基板上，所述反射层设置于所述薄膜晶体管上，所述反射层包括通孔，所述通孔贯穿所述反射层以暴露所述薄膜晶体管，所述反射层包括若干第一分层和若干第二分层，每一所述第一分层和每一所述第二分层依次交替层叠设置，所述第一分层的折射率和所述第二分层的折射率不同，所述迷你发光二极管设置于所述通孔中以电连接所述薄膜晶体管。在本申请中，将反射层设置于薄膜晶体管上，进而将进入背光源中紫外光反射掉，进而降低了混光对薄膜晶体管器件的干扰，进而提高了迷你发光二极管的光利用率。', 'CN202010285750.3', 1586707200, 'CN111463232A', 1595865600, 1595865600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\73cf466adb6044438b105536c795bc83.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41096, 41098, 41097, 1);
INSERT INTO `os_patent` VALUES (23842, '背光模组及其制备方法与显示装置', '背光模组及其制备方法与显示装置', 'CN111474768A', '本申请公开了一种背光模组及其制备方法与显示装置，所述制备方法包括提供一基板，在所述基板上形成多个微型发光二极管；通过喷墨打印工艺，将墨水分别打印至多个微型发光二极管上，形成光学液态层；对所述光学液态层进行固化工艺，以形成微型透镜，所述微型透镜使得所述型发光二极管的发光光线收敛。通过喷墨打印工艺，可精准地在微型发光二极管上形成微型透镜结构，该方法生产效率高，节省原材料，具有较高的产业化价值。', '本申请公开了一种背光模组及其制备方法与显示装置，所述制备方法包括提供一基板，在所述基板上形成多个微型发光二极管；通过喷墨打印工艺，将墨水分别打印至多个微型发光二极管上，形成光学液态层；对所述光学液态层进行固化工艺，以形成微型透镜，所述微型透镜使得所述型发光二极管的发光光线收敛。通过喷墨打印工艺，可精准地在微型发光二极管上形成微型透镜结构，该方法生产效率高，节省原材料，具有较高的产业化价值。', 'CN202010316558.6', 1587398400, 'CN111474768A', 1596124800, 1596124800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 5, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN101034166A | CN107708358A | CN108732818A | KR1020150059198A | WO2012141094A1', NULL, NULL, 1, '\\20220510\\46129967d1364b1d9b0b9dac47e97f00.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41099, 41101, 41100, 1);
INSERT INTO `os_patent` VALUES (23843, '一种背光模组结构、背光模组结构制程方法及显示面板', '一种背光模组结构、背光模组结构制程方法及显示面板', 'CN111474769A', '本申请实施例提供一种背光模组结构，包括：背光层、胶框以及光学膜片。背光层包括相对设置的第一面和第二面。胶框包括相对设置的第三面和第四面以及垂直于第三面和第四面相对设置的第一侧面和第二侧面，胶框设置在所述背光层垂直于第一面或第二面的一侧面，第一侧面平齐第二面设置，且第三面被背光层部分覆盖。胶框上设置有阶梯式凹槽结构，光学膜片的一侧设置有膜片延伸部，膜片延伸部通过阶梯式凹槽结构与胶框连接。通过在胶框上设置阶梯式凹槽结构，可以方便的将多层膜片固定在胶框上，组装便捷、加工方便，并且空间利用率高，能够最大限度的利用一侧边框的空间，进而能够在其他边框进行更窄的设计，适应了全面屏设计的要求。', '本申请实施例提供一种背光模组结构，包括：背光层、胶框以及光学膜片。背光层包括相对设置的第一面和第二面。胶框包括相对设置的第三面和第四面以及垂直于第三面和第四面相对设置的第一侧面和第二侧面，胶框设置在所述背光层垂直于第一面或第二面的一侧面，第一侧面平齐第二面设置，且第三面被背光层部分覆盖。胶框上设置有阶梯式凹槽结构，光学膜片的一侧设置有膜片延伸部，膜片延伸部通过阶梯式凹槽结构与胶框连接。通过在胶框上设置阶梯式凹槽结构，可以方便的将多层膜片固定在胶框上，组装便捷、加工方便，并且空间利用率高，能够最大限度的利用一侧边框的空间，进而能够在其他边框进行更窄的设计，适应了全面屏设计的要求。', 'CN202010400452.4', 1589299200, 'CN111474769A', 1596124800, 1596124800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 6, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN104456293A | CN107894676A | CN110570766A | CN110928048A | CN210244020U | CN210323453U', NULL, NULL, 1, '\\20220510\\b6e204ea24064640afc99859931f065f.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41102, 41104, 41103, 1);
INSERT INTO `os_patent` VALUES (23844, '一种显示器的驱动电路', '一种显示器的驱动电路', 'CN111477164A', '本申请公开了一种显示器的驱动电路，包括输入单元、与所述输入单元耦合的控制单元以及与所述控制单元耦合的发光单元，所述控制单元用于驱动所述发光单元发光；其中，所述控制单元包括相互独立的PWM控制单元以及PAM控制单元，所述PWM控制单元用于控制所述发光单元的发光时间，所述PAM控制单元用于控制所述发光单元中驱动电流的大小。本申请实施例将相互独立的PWM控制单元以及PAM控制单元同时控制发光单元驱动发光，在解决PAM驱动色偏移的问题的同时，克服TFT阈值电压引起的亮度不均，使得显示器充电时间长、数据带宽要求一般以及可支持高分辨率，进一步提高了显示器的显示效果。', '本申请公开了一种显示器的驱动电路，包括输入单元、与所述输入单元耦合的控制单元以及与所述控制单元耦合的发光单元，所述控制单元用于驱动所述发光单元发光；其中，所述控制单元包括相互独立的PWM控制单元以及PAM控制单元，所述PWM控制单元用于控制所述发光单元的发光时间，所述PAM控制单元用于控制所述发光单元中驱动电流的大小。本申请实施例将相互独立的PWM控制单元以及PAM控制单元同时控制发光单元驱动发光，在解决PAM驱动色偏移的问题的同时，克服TFT阈值电压引起的亮度不均，使得显示器充电时间长、数据带宽要求一般以及可支持高分辨率，进一步提高了显示器的显示效果。', 'CN202010402876.4', 1589299200, 'CN111477164A', 1596124800, 1596124800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 3, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 0, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 6, 4, 4, 4, 0, NULL, '916', NULL, NULL, NULL, 'CN101202022A | CN101329851A | CN108735143A | CN109979378A | CN110782831A | US20020140659A1', 'CN112863427A | CN113554979A | CN114067732A | CN114067732B', NULL, 1, '\\20220510\\fd0de8720bd24522aedf9335b6b5598b.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41105, 41107, 41106, 3);
INSERT INTO `os_patent` VALUES (23845, 'Micro-LED显示面板及其制备方法与邦定材料', 'Micro-LED显示面板及其制备方法与邦定材料', 'CN111477649A', '本申请公开了一种Micro‑LED显示面板及其制备方法与邦定材料，所述Micro‑LED显示面板包括：基板；驱动电路层，设于所述基板上；多个Micro‑LED芯片，所述Micro‑LED芯片通过邦定材料邦定至驱动电路层上，其中，所述邦定材料包括实现邦定功能的载体材料以及提升导热性能的导热材料。通过在常规的邦定材料中增加提升导热性能的导热材料，使得Micro‑LED芯片工作时产生的热量能更快速地传导走，有效降低Micro‑LED芯片工作时的温度，从而可有效延缓Mirco‑LED芯片的老化进程，从而延长Micro LED显示面板的使用寿命。', '本申请公开了一种Micro‑LED显示面板及其制备方法与邦定材料，所述Micro‑LED显示面板包括：基板；驱动电路层，设于所述基板上；多个Micro‑LED芯片，所述Micro‑LED芯片通过邦定材料邦定至驱动电路层上，其中，所述邦定材料包括实现邦定功能的载体材料以及提升导热性能的导热材料。通过在常规的邦定材料中增加提升导热性能的导热材料，使得Micro‑LED芯片工作时产生的热量能更快速地传导走，有效降低Micro‑LED芯片工作时的温度，从而可有效延缓Mirco‑LED芯片的老化进程，从而延长Micro LED显示面板的使用寿命。', 'CN202010295178.9', 1586880000, 'CN111477649A', 1596124800, 1596124800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\a913c75187f841a39be7103d7ff67cde.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41108, 41110, 41109, 1);
INSERT INTO `os_patent` VALUES (23846, '像素电路及其驱动方法', '像素电路及其驱动方法', 'CN111508420A', '本申请公开了一种像素电路及其驱动方法，包括发光器件、驱动晶体管、开关模块、补偿模块及初始化模块；在数据信号写入阶段，所述数据信号写入至所述驱动晶体管的栅极及所述补偿模块，所述补偿模块维持所述驱动晶体管的栅极电压并对所述驱动晶体管中的阈值电压的漂移进行补偿；所述初始化模块对所述发光器件进行初始化；在发光阶段，所述发光信号线载入的发光信号使所述开关模块、所述初始化模块工作，所述补偿模块维持所述驱动晶体管导通，驱动所述发光器件发光，所述初始化模块将所述初始化信号写入所述补偿模块，以保证所述发光器件发光的稳定性。', '本申请公开了一种像素电路及其驱动方法，包括发光器件、驱动晶体管、开关模块、补偿模块及初始化模块；在数据信号写入阶段，所述数据信号写入至所述驱动晶体管的栅极及所述补偿模块，所述补偿模块维持所述驱动晶体管的栅极电压并对所述驱动晶体管中的阈值电压的漂移进行补偿；所述初始化模块对所述发光器件进行初始化；在发光阶段，所述发光信号线载入的发光信号使所述开关模块、所述初始化模块工作，所述补偿模块维持所述驱动晶体管导通，驱动所述发光器件发光，所述初始化模块将所述初始化信号写入所述补偿模块，以保证所述发光器件发光的稳定性。', 'CN202010304374.8', 1587052800, 'CN111508420A', 1596729600, 1596729600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 7, 1, 1, 1, 0, NULL, '916', NULL, NULL, NULL, 'CN106910468A | CN107610651A | CN107680537A | CN107731169A | CN107863069A | CN110111742A | CN207134126U', 'CN112992055A', NULL, 1, '\\20220510\\60670500e9454fd0b466767414643041.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41111, 41113, 41112, 1);
INSERT INTO `os_patent` VALUES (23847, 'Micro LED显示面板及其制作方法', 'Micro LED显示面板及其制作方法', 'CN111524925A', '一种micro LED显示面板及其制作方法，包括：驱动单元和显示单元；驱动单元与显示单元均包括六个端面；驱动单元通过固定连接设置在背离显示面板出光一侧，驱动单元的第四端面与显示单元的第四端面位于同一平面内；显示单元包括：量子点层和色阻层，量子点层正对于色阻层进行设置，色阻层对量子点层发出的光线颜色进行转换；有益效果为：首先，驱动单元设置在显示单元的背面，相对于现有的显示面板显示区与非显示区设置于同一平面内，缩小了显示面板的边框，可以真正实现无边框显示；其次，设置有量子点层和色阻层，当量子点层发出的光经过色阻层时，根据色阻层的颜色而发生变化，实现多种颜色的转换，最后，所述micro LED显示面板为底发光型micro LED显示面板。', '一种micro LED显示面板及其制作方法，包括：驱动单元和显示单元；驱动单元与显示单元均包括六个端面；驱动单元通过固定连接设置在背离显示面板出光一侧，驱动单元的第四端面与显示单元的第四端面位于同一平面内；显示单元包括：量子点层和色阻层，量子点层正对于色阻层进行设置，色阻层对量子点层发出的光线颜色进行转换；有益效果为：首先，驱动单元设置在显示单元的背面，相对于现有的显示面板显示区与非显示区设置于同一平面内，缩小了显示面板的边框，可以真正实现无边框显示；其次，设置有量子点层和色阻层，当量子点层发出的光经过色阻层时，根据色阻层的颜色而发生变化，实现多种颜色的转换，最后，所述micro LED显示面板为底发光型micro LED显示面板。', 'CN202010328260.7', 1587571200, 'CN111524925A', 1597075200, 1597075200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 2, 2, 2, 0, NULL, '916', NULL, NULL, NULL, NULL, 'CN112768590A | TWI748856B', NULL, 1, '\\20220510\\33db0d709590451dababde55bf0b9a17.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41114, 41116, 41115, 1);
INSERT INTO `os_patent` VALUES (23848, 'Mini LED背光结构和Mini LED背光模组', 'Mini LED背光结构和Mini LED背光模组', 'CN111540273B', '本发明实施例提供一种Mini LED背光结构和背光模组，Mini LED背光结构包括背板、玻璃基板、反射片，玻璃基板包括线路面、以及靠近背板一侧的非线路面，非线路面设置有LED阵列、以及连接器，其中，背板与玻璃基板之间存在间距用于放置LED阵列、以及连接器，连接器通过导线与外部电路电连接；将其余元器件和连接器、以及LED阵列同面设置在非线路面，不会影响背光效果，同时节省了材料。', '本发明实施例提供一种Mini LED背光结构和背光模组，Mini LED背光结构包括背板、玻璃基板、反射片，玻璃基板包括线路面、以及靠近背板一侧的非线路面，非线路面设置有LED阵列、以及连接器，其中，背板与玻璃基板之间存在间距用于放置LED阵列、以及连接器，连接器通过导线与外部电路电连接；将其余元器件和连接器、以及LED阵列同面设置在非线路面，不会影响背光效果，同时节省了材料。', 'CN202010453842.8', 1590422400, 'CN111540273B', 1628179200, 1597334400, NULL, 1628179200, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 11, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 11, 0, 0, 0, 0, NULL, '916', NULL, '武晓林', NULL, 'CN102576520A | CN105676537A | CN108681118A | CN109324442A | CN109461376A | CN109496068A | CN109633978A | CN110850635A | CN202452301U | CN206321919U | CN209624946U', NULL, NULL, 1, '\\20220510\\03dce5d4cff9435f9bab5d1b14cd3703.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 41117, 41119, 41118, 3);
INSERT INTO `os_patent` VALUES (23849, '柔性彩色滤光膜及其制作方法、全彩微发光二极管器件', '柔性彩色滤光膜及其制作方法、全彩微发光二极管器件', 'CN111540281A', '本申请公开了一种柔性彩色滤光膜及其制作方法、全彩微发光二极管器件。全彩微发光二极管器件包括柔性彩色滤光膜，柔性彩色滤光膜，包括聚合物树脂基底、反射层、光扩散层以及量子点层。通过设置反射层以及光扩散层用于增强量子点层对蓝光的吸收，从而提高蓝光利用率和所述量子点层的出光率。并将量子点层置于蓝光微发光二极管上实现全彩化显示。这样既能保证蓝光的充分利用，提高能量利用率，也能保证显示器的色域、色纯度足够高，从而实现高品质画面。', '本申请公开了一种柔性彩色滤光膜及其制作方法、全彩微发光二极管器件。全彩微发光二极管器件包括柔性彩色滤光膜，柔性彩色滤光膜，包括聚合物树脂基底、反射层、光扩散层以及量子点层。通过设置反射层以及光扩散层用于增强量子点层对蓝光的吸收，从而提高蓝光利用率和所述量子点层的出光率。并将量子点层置于蓝光微发光二极管上实现全彩化显示。这样既能保证蓝光的充分利用，提高能量利用率，也能保证显示器的色域、色纯度足够高，从而实现高品质画面。', 'CN202010426202.8', 1589817600, 'CN111540281A', 1597334400, 1597334400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 11, 2, 2, 2, 0, NULL, '916', NULL, NULL, NULL, 'CN103278961A | CN106773306A | CN108447965A | CN108761894A | CN109004094A | CN109979960A | CN110047986A | CN110246990A | CN110911456A | CN209433056U | CN210294747U', 'CN112578594A | CN112578597A', NULL, 1, '\\20220510\\0d056ca58cfa4ea4ad917b347a204eb2.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41120, 41122, 41121, 2);
INSERT INTO `os_patent` VALUES (23850, '显示面板Mura补偿方法、装置及显示面板、显示装置', '显示面板Mura补偿方法、装置及显示面板、显示装置', 'CN111540309A', '本申请公开了一种显示面板Mura补偿方法、装置及显示面板、显示装置，该方法包括：获取并处理显示面板中各个预设灰阶对应的Mura补偿数据，得到各个中间灰阶对应的Mura补偿数据；在各预设灰阶和各中间灰阶中，获取与待补偿灰阶最接近的两个灰阶，确定为第一比对灰阶和第二比对灰阶；将对应第一比对灰阶的Mura补偿数据和对应第二比对灰阶的Mura补偿数据进行线性插值处理，得到对应待补偿灰阶的Mura补偿数据；根据对应待补充灰阶的Mura补偿数据，对显示面板进行Mura补偿，进而实现对待补偿灰阶进行补偿。本申请能够通过有限的预设灰阶的Mura补偿数据，内建多个中间灰阶的Mura补偿数据，从而改善显示面板Mura现象，提高Mura补偿精度，增强显示面板品质。', '本申请公开了一种显示面板Mura补偿方法、装置及显示面板、显示装置，该方法包括：获取并处理显示面板中各个预设灰阶对应的Mura补偿数据，得到各个中间灰阶对应的Mura补偿数据；在各预设灰阶和各中间灰阶中，获取与待补偿灰阶最接近的两个灰阶，确定为第一比对灰阶和第二比对灰阶；将对应第一比对灰阶的Mura补偿数据和对应第二比对灰阶的Mura补偿数据进行线性插值处理，得到对应待补偿灰阶的Mura补偿数据；根据对应待补充灰阶的Mura补偿数据，对显示面板进行Mura补偿，进而实现对待补偿灰阶进行补偿。本申请能够通过有限的预设灰阶的Mura补偿数据，内建多个中间灰阶的Mura补偿数据，从而改善显示面板Mura现象，提高Mura补偿精度，增强显示面板品质。', 'CN202010423947.9', 1589817600, 'CN111540309A', 1597334400, 1597334400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 18, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 10, 1, 1, 1, 0, NULL, '916', NULL, NULL, NULL, 'CN106910483A | CN106991982A | CN107610642A | CN107863080A | CN108538264A | CN110136649A | CN110189721A | CN111028779A | CN111028809A | TW202011628A', 'CN112447137A', NULL, 1, '\\20220510\\5dae4bb5e51e46339d524fedea435c61.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41123, 41125, 41124, 1);
INSERT INTO `os_patent` VALUES (23851, '显示面板及其制作方法、显示装置', '显示面板及其制作方法、显示装置', 'CN111540763A', '本申请提出了一种显示面板，其包括：微型发光二极管，微型发光二极管包括主体及自主体的周缘向外延伸的延伸部；阵列基板，微型发光二极管安装于阵列基板；封胶层，封胶层位于阵列基板上，并覆盖微型发光二极管的延伸部。', '本申请提出了一种显示面板，其包括：微型发光二极管，微型发光二极管包括主体及自主体的周缘向外延伸的延伸部；阵列基板，微型发光二极管安装于阵列基板；封胶层，封胶层位于阵列基板上，并覆盖微型发光二极管的延伸部。', 'CN202010407597.7', 1589385600, 'CN111540763A', 1597334400, 1597334400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\a11e7ef98b514f74810a2be27ceeb486.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41126, 41128, 41127, 1);
INSERT INTO `os_patent` VALUES (23852, '驱动电路的数据处理方法及驱动电路', '驱动电路的数据处理方法及驱动电路', 'CN111556614B', '本申请实施例公开了一种驱动电路的数据处理方法和驱动电路。其中，该驱动电路的数据处理方法可以包括获取时序参数；基于所述时序参数进行数据处理，得到第一处理结果；根据预设基准电压对所述第一处理结果进行解码，得到第二处理结果；对所述第二处理结果进行放大处理，并将放大处理后的所述第二处理结果输出。通过本方案可以产生随时间变化的电压信号，从而解决Micro LED随着使用时间的增加而出现色偏的问题。', '本申请实施例公开了一种驱动电路的数据处理方法和驱动电路。其中，该驱动电路的数据处理方法可以包括获取时序参数；基于所述时序参数进行数据处理，得到第一处理结果；根据预设基准电压对所述第一处理结果进行解码，得到第二处理结果；对所述第二处理结果进行放大处理，并将放大处理后的所述第二处理结果输出。通过本方案可以产生随时间变化的电压信号，从而解决Micro LED随着使用时间的增加而出现色偏的问题。', 'CN202010388640.X', 1588953600, 'CN111556614B', 1622476800, 1597680000, NULL, 1622476800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 13, 4, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 8, 0, 0, 0, 0, NULL, '916', NULL, '倪亚萍', NULL, 'CN101841901A | CN108346404A | CN109147716A | CN109308871A | CN110021263A | CN110706637A | US20100245336A1 | US20110310135A1', NULL, NULL, 1, '\\20220510\\97fa32e100ce4620b9e265ca751c3b2d.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 41129, 41131, 41130, 3);
INSERT INTO `os_patent` VALUES (23853, '背光模组、显示面板及电子装置', '背光模组、显示面板及电子装置', 'CN111580304B', '本申请提出了一种背光模组、显示面板及电子装置，该背光模组包括：玻璃基底；多个驱动单元，多个该驱动单元形成于该玻璃基底上，每一该驱动单元包括薄膜晶体管；多个微型发光二极管，多个该微型发光二极管设于该玻璃基底上，每一该微型发光二极管包括第一电极和第二电极，该第一电极和该第二电极连接于对应的该驱动单元，其中，该驱动单元包括开关模块、驱动模块及存储模块，该开关模块的一端分别连接于该驱动模块和该存储模块，该驱动模块连接于该微型发光二极管。', '本申请提出了一种背光模组、显示面板及电子装置，该背光模组包括：玻璃基底；多个驱动单元，多个该驱动单元形成于该玻璃基底上，每一该驱动单元包括薄膜晶体管；多个微型发光二极管，多个该微型发光二极管设于该玻璃基底上，每一该微型发光二极管包括第一电极和第二电极，该第一电极和该第二电极连接于对应的该驱动单元，其中，该驱动单元包括开关模块、驱动模块及存储模块，该开关模块的一端分别连接于该驱动模块和该存储模块，该驱动模块连接于该微型发光二极管。', 'CN202010374379.8', 1588694400, 'CN111580304B', 1632412800, 1598284800, NULL, 1632412800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 16, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 4, NULL, NULL, 3, 0, 0, 0, 0, NULL, '916', NULL, '谢平', NULL, 'CN108267891A | CN109585520A | CN111092091A', NULL, NULL, 1, '\\20220510\\d6ae19a40f684156a872faa354aae91f.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41132, 41134, 41133, 4);
INSERT INTO `os_patent` VALUES (23854, '卷曲显示装置', '卷曲显示装置', 'CN111583798A', '本申请实施例提供一种卷曲显示装置，该卷曲显示装置通过在卷轴内设置摄像组件，摄像组件可从卷轴中弹出，使得在展开显示面板时，可以实现第一端摄像，而通过将卷轴向显示面板卷曲第一区的宽度，即可实现与第一端摄像相对的第二端摄像，从而通过在卷轴中设置摄像组件实现前置摄像和后置摄像，解决了现有卷曲显示装置存在摄像头与显示面板共存效果较差，导致无法实现摄像功能的技术问题。', '本申请实施例提供一种卷曲显示装置，该卷曲显示装置通过在卷轴内设置摄像组件，摄像组件可从卷轴中弹出，使得在展开显示面板时，可以实现第一端摄像，而通过将卷轴向显示面板卷曲第一区的宽度，即可实现与第一端摄像相对的第二端摄像，从而通过在卷轴中设置摄像组件实现前置摄像和后置摄像，解决了现有卷曲显示装置存在摄像头与显示面板共存效果较差，导致无法实现摄像功能的技术问题。', 'CN202010414021.3', 1589472000, 'CN111583798A', 1598284800, 1598284800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 12, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 11, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN103853320A | CN104978898A | CN107180597A | CN108377279A | CN109413325A | CN109491541A | CN109788092A | CN206850821U | CN209692814U | KR1020100009008A | US20130237288A1', NULL, NULL, 1, '\\20220510\\2a9df802391e4547a6be00daaea34f5f.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41135, 41137, 41136, 1);
INSERT INTO `os_patent` VALUES (23855, '拼接显示面板及其制备方法', '拼接显示面板及其制备方法', 'CN111584475B', '本申请公开了一种拼接显示面板及其制备方法，所述拼接显示面板由多个拼接显示单元拼接而成，任意一拼接显示单元依次包括：基板；柔性衬底；阵列驱动层，包括显示区以及设于所述显示区外侧的至少一个扇出区；以及发光层，包括邦定于阵列驱动层的显示区上的多个微型发光二极管，其中，所述扇出区沿基板厚度方向弯折并贴附固定于所述基板的下表面，所述基板仅设于除去所述扇出区相对的一侧的对应区域以外的显示区中，为相邻的所述拼接显示单元中扇出区的弯折部提供容纳空间，防止弯折部走线因拼接而受到挤压导致弯折甚至断线，有效提高拼接显示单元的生产良率以及可靠性。', '本申请公开了一种拼接显示面板及其制备方法，所述拼接显示面板由多个拼接显示单元拼接而成，任意一拼接显示单元依次包括：基板；柔性衬底；阵列驱动层，包括显示区以及设于所述显示区外侧的至少一个扇出区；以及发光层，包括邦定于阵列驱动层的显示区上的多个微型发光二极管，其中，所述扇出区沿基板厚度方向弯折并贴附固定于所述基板的下表面，所述基板仅设于除去所述扇出区相对的一侧的对应区域以外的显示区中，为相邻的所述拼接显示单元中扇出区的弯折部提供容纳空间，防止弯折部走线因拼接而受到挤压导致弯折甚至断线，有效提高拼接显示单元的生产良率以及可靠性。', 'CN202010410244.2', 1589472000, 'CN111584475B', 1637596800, 1598284800, NULL, 1637596800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 15, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 3, 0, 0, 0, 0, NULL, '916', NULL, '赵龙', NULL, 'CN110379314A | CN110379322A | US20160014882A1', NULL, NULL, 1, '\\20220510\\db183ee8c61c48d8a7bb5b38325b902d.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41138, 41140, 41139, 2);
INSERT INTO `os_patent` VALUES (23856, '显示面板及其制作方法、显示终端', '显示面板及其制作方法、显示终端', 'CN111584507A', '本揭示提供一种显示面板及其制作方法、显示终端，显示面板包括衬底基板、薄膜晶体管阵列层、导电电极层、像素定义层和多个发光器件，像素定义层上设有阵列排布的多个凹槽，凹槽暴露出部分位于导电电极层的导电电极，发光器件分别粘附于相邻两个凹槽之间的像素定义层上，以对发光器件进行绑定前的初步固定，再通过填充至发光器件与相邻两个凹槽之间各形成的微腔结构内的导电材料将发光器件与导电电极绑定连接，以此防止发光器件绑定不良情况的发生，并降低修复成本。', '本揭示提供一种显示面板及其制作方法、显示终端，显示面板包括衬底基板、薄膜晶体管阵列层、导电电极层、像素定义层和多个发光器件，像素定义层上设有阵列排布的多个凹槽，凹槽暴露出部分位于导电电极层的导电电极，发光器件分别粘附于相邻两个凹槽之间的像素定义层上，以对发光器件进行绑定前的初步固定，再通过填充至发光器件与相邻两个凹槽之间各形成的微腔结构内的导电材料将发光器件与导电电极绑定连接，以此防止发光器件绑定不良情况的发生，并降低修复成本。', 'CN202010402985.6', 1589299200, 'CN111584507A', 1598284800, 1598284800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 17, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 2, 2, 2, 0, NULL, '916', NULL, NULL, NULL, NULL, 'CN111952331A | WO2022047907A1', NULL, 1, '\\20220510\\4cf3f138eaef4db08ad5509676e23ce2.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41141, 41143, 41142, 1);
INSERT INTO `os_patent` VALUES (23857, '阵列基板及其制造方法、显示装置', '阵列基板及其制造方法、显示装置', 'CN111584511B', '本申请提供一种阵列基板及其制造方法、显示装置，所述阵列基板包括：基板；阵列层，阵列层包括设置于基板上的导电垫以及导电电极，导电垫用于与待绑定于阵列基板上的驱动芯片电性连接，导电电极用于与待绑定于阵列基板上的发光元件连接；防划伤层，防划伤层设置于阵列层远离基板的一侧，防划伤层具有第一镂空区和第二镂空区，第一镂空区对应导电垫，第二镂空区对应导电电极。通过在阵列层远离基板的一侧设置防划伤层，以避免将驱动芯片以及发光元件绑定于阵列基板的过程中对阵列层上的线路造成划伤。', '本申请提供一种阵列基板及其制造方法、显示装置，所述阵列基板包括：基板；阵列层，阵列层包括设置于基板上的导电垫以及导电电极，导电垫用于与待绑定于阵列基板上的驱动芯片电性连接，导电电极用于与待绑定于阵列基板上的发光元件连接；防划伤层，防划伤层设置于阵列层远离基板的一侧，防划伤层具有第一镂空区和第二镂空区，第一镂空区对应导电垫，第二镂空区对应导电电极。通过在阵列层远离基板的一侧设置防划伤层，以避免将驱动芯片以及发光元件绑定于阵列基板的过程中对阵列层上的线路造成划伤。', 'CN202010407047.5', 1589385600, 'CN111584511B', 1627920000, 1598284800, NULL, 1627920000, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 9, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 4, NULL, NULL, 3, 0, 0, 0, 0, NULL, '916', NULL, '曹梦军', NULL, 'CN110600497A | CN111063693A | US20200075816A1', NULL, NULL, 1, '\\20220510\\41676a19ac3c40458ebb9da09f69a1a4.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 41144, 41146, 41145, 4);
INSERT INTO `os_patent` VALUES (23858, '一种mini LED显示面板及其制备方法', '一种mini LED显示面板及其制备方法', 'CN111584534A', '本发明公开了一种mini LED显示面板及其制备方法，mini LED显示面板包括柔性层；薄膜晶体管电路，设于所述柔性层的一侧表面；若干mini led芯片，均匀分布于所述薄膜晶体管电路远离所述柔性层的一侧表面。本发明的有益效果在于：本发明的一种mini LED显示面板及其制备方法通过将mini LED芯片集成设于柔性层上，实现了mini LED显示面板的全彩显示，降低了mini LED显示面板的厚度，采用转印或喷墨打印的方式将转换层覆盖于mini LED芯片上，在实现mini LED显示面板的全彩显示的同时，能够减少mini LED芯片的制备步骤，降低mini LED显示面板的制备成本。', '本发明公开了一种mini LED显示面板及其制备方法，mini LED显示面板包括柔性层；薄膜晶体管电路，设于所述柔性层的一侧表面；若干mini led芯片，均匀分布于所述薄膜晶体管电路远离所述柔性层的一侧表面。本发明的有益效果在于：本发明的一种mini LED显示面板及其制备方法通过将mini LED芯片集成设于柔性层上，实现了mini LED显示面板的全彩显示，降低了mini LED显示面板的厚度，采用转印或喷墨打印的方式将转换层覆盖于mini LED芯片上，在实现mini LED显示面板的全彩显示的同时，能够减少mini LED芯片的制备步骤，降低mini LED显示面板的制备成本。', 'CN202010405595.4', 1589385600, 'CN111584534A', 1598284800, 1598284800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 4, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\c40a75577f7d4f7f9a06af699b407fd8.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41147, 41149, 41148, 1);
INSERT INTO `os_patent` VALUES (23859, '微型发光二极管显示装置及其制造方法', '微型发光二极管显示装置及其制造方法', 'CN111584538A', '本揭示公开一种微型发光二极管显示装置的制造方法，其包含：提供驱动基板，其包含第一基板及设置在第一基板上的驱动电路层，其中驱动电路层具有第一电极及第二电极；提供转移基板，其包含第二基板及分别设置在第二基板的两相对表面的对位标记及微型发光二极管，其中微型发光二极管包含P电极及N电极；通过对位标记贴合驱动基板及转移基板，使第一电极及第二电极分别电连接P电极及N电极；去除对位标记；及薄化第二基板。本揭示还公开一种通过所述方法制成的显示装置。', '本揭示公开一种微型发光二极管显示装置的制造方法，其包含：提供驱动基板，其包含第一基板及设置在第一基板上的驱动电路层，其中驱动电路层具有第一电极及第二电极；提供转移基板，其包含第二基板及分别设置在第二基板的两相对表面的对位标记及微型发光二极管，其中微型发光二极管包含P电极及N电极；通过对位标记贴合驱动基板及转移基板，使第一电极及第二电极分别电连接P电极及N电极；去除对位标记；及薄化第二基板。本揭示还公开一种通过所述方法制成的显示装置。', 'CN202010507355.5', 1591286400, 'CN111584538A', 1598284800, 1598284800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 18, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 3, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\0298b24272ff42d78988fb8facca0c99.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41150, 41152, 41151, 3);
INSERT INTO `os_patent` VALUES (23860, 'micro LED巨量转移装置及micro LED巨量转移方法', 'micro LED巨量转移装置及micro LED巨量转移方法', 'CN111584689B', '一种micro LED巨量转移装置及其转移方法，micro LED巨量转移装置，包括：光照模块、转移模块、清洗模块以及干燥模块，光照模块设置在整个装置的最上面，光照模块内设置有掩膜板；转移模块设置在所述光照模块的下方，所述转移模块内包括：蓝宝石基板、micro LED芯片、传送带以及载板，待转移的所述micro LED芯片正对于所述掩膜板的开口处设置；清洗模块包括：传送带、清洗溶液和清洗喷头；所述干燥模块包括：传送和干燥源；有益效果：转移时，将掩膜板的开口处正对于待转移的所述micro LED芯片，可以一次性转移多个micro LED芯片，实现micro LED芯片的巨量转移，提升micro LED的转移效率；同时，所述传送带上设置有粘胶层，减少了与所述micro LED芯片接触的次数，提高了micro LED巨量转移良率。', '一种micro LED巨量转移装置及其转移方法，micro LED巨量转移装置，包括：光照模块、转移模块、清洗模块以及干燥模块，光照模块设置在整个装置的最上面，光照模块内设置有掩膜板；转移模块设置在所述光照模块的下方，所述转移模块内包括：蓝宝石基板、micro LED芯片、传送带以及载板，待转移的所述micro LED芯片正对于所述掩膜板的开口处设置；清洗模块包括：传送带、清洗溶液和清洗喷头；所述干燥模块包括：传送和干燥源；有益效果：转移时，将掩膜板的开口处正对于待转移的所述micro LED芯片，可以一次性转移多个micro LED芯片，实现micro LED芯片的巨量转移，提升micro LED的转移效率；同时，所述传送带上设置有粘胶层，减少了与所述micro LED芯片接触的次数，提高了micro LED巨量转移良率。', 'CN202010404144.9', 1589299200, 'CN111584689B', 1633622400, 1598284800, NULL, 1633622400, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 2, 0, 0, 0, 0, NULL, '916', NULL, '魏芳芳', NULL, 'CN101017775A | CN111128843A', NULL, NULL, 1, '\\20220510\\a82f5e4d6484454cb518901477806ce9.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 41153, 41155, 41154, 2);
INSERT INTO `os_patent` VALUES (23861, '一种彩膜基板和显示面板', '一种彩膜基板和显示面板', 'CN111596484A', '本申请提供一种彩膜基板和显示面板，该彩膜基板包括第一像素区域和邻近第一像素区域的第二像素区域，彩膜基板还包括：基底；多个Micro LED发光单元，对应第一像素区域设置于基底的一侧，其中，多个Micro LED发光单元之间设有透光区；彩色色阻，对应第二像素区域设于基底的相对另一侧。本申请通过在彩膜基板上对应第一像素区域设置Micro LED发光单元，从而解决了在LCD屏中光学式传感器与光学显示无法在空间上重合的问题，进而使LCD屏能够满足人们对全面屏的极致需求。', '本申请提供一种彩膜基板和显示面板，该彩膜基板包括第一像素区域和邻近第一像素区域的第二像素区域，彩膜基板还包括：基底；多个Micro LED发光单元，对应第一像素区域设置于基底的一侧，其中，多个Micro LED发光单元之间设有透光区；彩色色阻，对应第二像素区域设于基底的相对另一侧。本申请通过在彩膜基板上对应第一像素区域设置Micro LED发光单元，从而解决了在LCD屏中光学式传感器与光学显示无法在空间上重合的问题，进而使LCD屏能够满足人们对全面屏的极致需求。', 'CN202010485380.8', 1590940800, 'CN111596484A', 1598544000, 1598544000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 14, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 3, 1, 1, 0, NULL, '916', NULL, NULL, NULL, NULL, 'CN111653585A | WO2021248783A1 | WO2021253560A1', NULL, 1, '\\20220510\\85741a7b276a463a85da82fcbf5e7b4b.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41156, 41158, 41157, 3);
INSERT INTO `os_patent` VALUES (23862, '一种彩膜基板、显示面板、显示装置', '一种彩膜基板、显示面板、显示装置', 'CN111596485A', '本申请提供一种彩膜基板、显示面板、显示装置，该彩膜基板包括第一像素区域和邻近第一像素区域的第二像素区域，彩膜基板还包括：基底；Micro LED发光单元，对应第一像素区域设置于基底上；平坦层，设置于Micro LED发光单元以及基底上；彩色色阻，对应第二像素区域设于平坦层上。本申请通过在彩膜基板上对应第一像素区域设置Micro LED发光单元，从而解决了在LCD屏中光学式传感器与光学显示无法在空间上重合的问题，进而使LCD屏能够满足人们对全面屏的极致需求。', '本申请提供一种彩膜基板、显示面板、显示装置，该彩膜基板包括第一像素区域和邻近第一像素区域的第二像素区域，彩膜基板还包括：基底；Micro LED发光单元，对应第一像素区域设置于基底上；平坦层，设置于Micro LED发光单元以及基底上；彩色色阻，对应第二像素区域设于平坦层上。本申请通过在彩膜基板上对应第一像素区域设置Micro LED发光单元，从而解决了在LCD屏中光学式传感器与光学显示无法在空间上重合的问题，进而使LCD屏能够满足人们对全面屏的极致需求。', 'CN202010513906.9', 1591545600, 'CN111596485A', 1598544000, 1598544000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 16, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 3, 1, 1, 0, NULL, '916', NULL, NULL, NULL, NULL, 'CN111653585A | WO2021248783A1 | WO2021253560A1', NULL, 1, '\\20220510\\8d282134aafa48f39147c69c595cd839.png', NULL, NULL, 1, NULL, NULL, 15, NULL, NULL, NULL, 41159, 41161, 41160, 3);
INSERT INTO `os_patent` VALUES (23863, '触控显示装置', '触控显示装置', 'CN111596804B', '本申请提供一种触控显示装置，触控显示装置包括触控层，触控层包括多个触控单元，每个触控单元包括一个第一电极以及一个第二电极，第一电极与第二电极电性绝缘，每个触控单元中，第一电极的电阻大于0欧姆且小于或等于50欧姆，且第一电极的寄生电容大于0皮法且小于或等于18皮法；第二电极的电阻大于0欧姆且小于或等于50欧姆，且第二电极的寄生电容大于0皮法且小于或等于18皮法。通过同时对每个触控单元中第一电极的电阻和寄生电容以及每个触控单元中第二电极的电阻和寄生电容进行优化，以降低每个触控单元中第一电极和第二电极之间的节点互电容充电至预设电压所需时间，从而提高触控显示装置的触控报点率。', '本申请提供一种触控显示装置，触控显示装置包括触控层，触控层包括多个触控单元，每个触控单元包括一个第一电极以及一个第二电极，第一电极与第二电极电性绝缘，每个触控单元中，第一电极的电阻大于0欧姆且小于或等于50欧姆，且第一电极的寄生电容大于0皮法且小于或等于18皮法；第二电极的电阻大于0欧姆且小于或等于50欧姆，且第二电极的寄生电容大于0皮法且小于或等于18皮法。通过同时对每个触控单元中第一电极的电阻和寄生电容以及每个触控单元中第二电极的电阻和寄生电容进行优化，以降低每个触控单元中第一电极和第二电极之间的节点互电容充电至预设电压所需时间，从而提高触控显示装置的触控报点率。', 'CN202010721338.1', 1595520000, 'CN111596804B', 1602777600, 1598544000, NULL, 1602777600, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 29, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 5, 0, 0, 0, 0, NULL, '916', NULL, '徐鹏', NULL, 'CN102566845A | CN103221910A | CN109766024A | US20140210765A1 | US20150097802A1', NULL, NULL, 1, '\\20220510\\583507ed837842d5b2c122e684eb5e5e.png', NULL, NULL, 1, NULL, NULL, 18, NULL, NULL, NULL, 41162, 41164, 41163, 3);
INSERT INTO `os_patent` VALUES (23864, '显示面板及其制备方法', '显示面板及其制备方法', 'CN111613632A', '本申请实施例提供一种显示面板及其制备方法，该显示面板通过围绕绑定端子设置阻挡图案，使阻挡图案和绑定端子形成开口，开口的上端宽度大于开口的下端的宽度，使得在微型发光二极管芯片出现偏移时，微型发光二极管芯片能够从阻挡图案上滑落至绑定端子上，与绑定端子对位贴合，从而减少了偏移的微型发光二极管芯片的数量，缓解了现有Micro‑LED显示面板存在Micro‑LED芯片与绑定端子容易出现对位偏移，导致Micro‑LED芯片脱落的问题。', '本申请实施例提供一种显示面板及其制备方法，该显示面板通过围绕绑定端子设置阻挡图案，使阻挡图案和绑定端子形成开口，开口的上端宽度大于开口的下端的宽度，使得在微型发光二极管芯片出现偏移时，微型发光二极管芯片能够从阻挡图案上滑落至绑定端子上，与绑定端子对位贴合，从而减少了偏移的微型发光二极管芯片的数量，缓解了现有Micro‑LED显示面板存在Micro‑LED芯片与绑定端子容易出现对位偏移，导致Micro‑LED芯片脱落的问题。', 'CN202010438783.7', 1590076800, 'CN111613632A', 1598889600, 1598889600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 17, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 2, 2, 2, 0, NULL, '916', NULL, NULL, NULL, NULL, 'CN112259671A | CN112259671B', NULL, 1, '\\20220510\\6ebee9c1ba1b4bc7aedb800327f6b895.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41165, 41167, 41166, 1);
INSERT INTO `os_patent` VALUES (23865, '微型发光二极管及其制作方法', '微型发光二极管及其制作方法', 'CN111613699B', '本申请提出了一种微型发光二极管及其制作方法，该制作方法包括在第一衬底上形成间隔设置的由LED发光单元构成的第一单体、及由无机单体与LED发光单体的组合单体，并通过无机单体与LED发光单体剧透不同的带隙宽度的原理从第一衬底转移至第二衬底上，完成该微型发光二极管的转移。本申请通过利用不同波长的镭射激光使得LED发光单体从第一衬底转移至第二衬底上，减小了工作量，提高了转移分散率。', '本申请提出了一种微型发光二极管及其制作方法，该制作方法包括在第一衬底上形成间隔设置的由LED发光单元构成的第一单体、及由无机单体与LED发光单体的组合单体，并通过无机单体与LED发光单体剧透不同的带隙宽度的原理从第一衬底转移至第二衬底上，完成该微型发光二极管的转移。本申请通过利用不同波长的镭射激光使得LED发光单体从第一衬底转移至第二衬底上，减小了工作量，提高了转移分散率。', 'CN202010447186.0', 1590336000, 'CN111613699B', 1622476800, 1598889600, NULL, 1622476800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 15, 0, 0, 0, 1, NULL, '916', NULL, '史敏娜', NULL, 'CN101159304A | CN106229326A | CN107017319A | CN107331758A | CN107887331A | CN109473532A | CN109860092A | CN109906518A | CN110021237A | CN110610931A | CN111128832A | JP2003133708A | JP2020053558A | US20190334057A1 | US20200043901A1', NULL, 'Seongkyu Cho.“FLUIDIC SELF-ASSEMBLY TRANSFER TECHNOLOGY FOR MICRO-LED DISPLAY”.《IEEE》.2019,全文.', 1, '\\20220510\\6353a439b09f420b8de0513cee033af3.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41168, 41170, 41169, 2);
INSERT INTO `os_patent` VALUES (23866, '迷你发光二极管背光模组、其制作方法及显示装置', '迷你发光二极管背光模组、其制作方法及显示装置', 'CN111613709A', '在本申请提供的迷你发光二极管背光模组、其制作方法及显示装置中，通过提供一碳膏溶液；将所述碳膏溶液涂覆在基板上，以在基板上形成碳膏阵列，碳膏阵列包括多个碳膏接触点；将多个迷你发光二极管转移至基板上，所述多个迷你发光二极管与多个碳膏接触点一一对应且接触；对述基板进行低温退火处理这一固晶方法。用高导电性的碳膏替代锡膏作为固晶原料，不采用高温回流焊，采用低温烧结完成固晶制程，从而使固晶制程更加的简单节能，可以解决现有的固晶制程因采取高温回流焊而造成能源浪费的技术问题。', '在本申请提供的迷你发光二极管背光模组、其制作方法及显示装置中，通过提供一碳膏溶液；将所述碳膏溶液涂覆在基板上，以在基板上形成碳膏阵列，碳膏阵列包括多个碳膏接触点；将多个迷你发光二极管转移至基板上，所述多个迷你发光二极管与多个碳膏接触点一一对应且接触；对述基板进行低温退火处理这一固晶方法。用高导电性的碳膏替代锡膏作为固晶原料，不采用高温回流焊，采用低温烧结完成固晶制程，从而使固晶制程更加的简单节能，可以解决现有的固晶制程因采取高温回流焊而造成能源浪费的技术问题。', 'CN202010461063.2', 1590508800, 'CN111613709A', 1598889600, 1598889600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 7, 1, 1, 1, 0, NULL, '916', NULL, NULL, NULL, 'CN102779923A | CN103456875A | CN105472899A | CN105555023A | CN105826454A | CN107887331A | US20190295992A1', 'CN112786742A', NULL, 1, '\\20220510\\3f30ac4d65134d3a808d9cdfe0b39fc5.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41171, 41173, 41172, 2);
INSERT INTO `os_patent` VALUES (23867, '微型发光二极管及其制作方法', '微型发光二极管及其制作方法', 'CN111613714A', '本申请提出了一种微型发光二极管及其制作方法，该制作方法包括在设置有多个驱动电路板的衬底上形成多个导电单体；在该导电单体上形成至少一发光单体；利用第一温度使该导电单体呈熔融状态，使该发光单体与该驱动电路板电连接。本申请通过在驱动电路板的端子上设置锡金属单体对端子区域进行定位，当锡金属与LED发光单体完成对位后，通过锡金属的低熔点性能，并利用预定温度使锡金属单体熔融，使得LED发光单体与端子电连接，完成LED发光单体与驱动电路板的对位，使得锡点的位置固定，不易扩散或偏移，消除暗点。', '本申请提出了一种微型发光二极管及其制作方法，该制作方法包括在设置有多个驱动电路板的衬底上形成多个导电单体；在该导电单体上形成至少一发光单体；利用第一温度使该导电单体呈熔融状态，使该发光单体与该驱动电路板电连接。本申请通过在驱动电路板的端子上设置锡金属单体对端子区域进行定位，当锡金属与LED发光单体完成对位后，通过锡金属的低熔点性能，并利用预定温度使锡金属单体熔融，使得LED发光单体与端子电连接，完成LED发光单体与驱动电路板的对位，使得锡点的位置固定，不易扩散或偏移，消除暗点。', 'CN202010447756.6', 1590336000, 'CN111613714A', 1598889600, 1598889600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 16, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN101335214A | CN102683517A | CN104183683A | CN106876552A | CN108010889A | CN108140664A | CN109461752A | CN110190170A | CN110459667A | CN110600589A | CN110957411A | CN111063268A | CN111063691A | CN111129235A | CN1624887A | CN205508876U', NULL, NULL, 1, '\\20220510\\e3638c4b7bea46bbbd5b7ee2b38964d0.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41174, 41176, 41175, 1);
INSERT INTO `os_patent` VALUES (23868, '曲面显示装置', '曲面显示装置', 'CN111624813A', '本发明提供一种曲面显示装置，包括：直下式背光结构以及曲面显示面板。通过采用直下式的背光结构，背光源为一MiniLED灯板。避免了传统侧入式曲面背光，入光侧易出现亮暗不均的问题。因采用整面直下式背光的方式，不会存在局部亮暗灯影。并且MiniLED灯板可以实现弯折，可以完全匹配曲面显示装置的曲率。并且可以取消了扩散板及曲面网点调试的环节，减小了开发费用，验证周期也大大缩短。最后可对背光源实施局部调光算法，对漏光的局部亮度并进行调控。', '本发明提供一种曲面显示装置，包括：直下式背光结构以及曲面显示面板。通过采用直下式的背光结构，背光源为一MiniLED灯板。避免了传统侧入式曲面背光，入光侧易出现亮暗不均的问题。因采用整面直下式背光的方式，不会存在局部亮暗灯影。并且MiniLED灯板可以实现弯折，可以完全匹配曲面显示装置的曲率。并且可以取消了扩散板及曲面网点调试的环节，减小了开发费用，验证周期也大大缩短。最后可对背光源实施局部调光算法，对漏光的局部亮度并进行调控。', 'CN202010540778.7', 1592150400, 'CN111624813A', 1599148800, 1599148800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 7, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN103604067A | CN105629575A | CN106205395A | CN108107598A | CN110703483A | CN111025755A | CN203773876U', NULL, NULL, 1, '\\20220510\\381d85c18bc9420eada3530f7cd8f843.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41177, 41179, 41178, 1);
INSERT INTO `os_patent` VALUES (23869, '一种显示面板及显示装置', '一种显示面板及显示装置', 'CN111627346A', '本揭示提供一种显示面板及显示装置。显示面板包括多个像素单元和功能元件。每个像素单元包括子像素，子像素包括第一Micro LED芯片，在俯视视角下，相邻两个第一Micro LED芯片之间设有间隙。功能元件设置于所述间隙处。其中所述功能元件的功能与所述子像素的显示功能不同。通过采用极小尺寸的Micro LED芯片作为基本子像素，从而在Micro LED子像素空间中预留一定的功能集成区，用于承接功能元件。功能元件包括通讯天线、生物识别、储能电池、存储单元、逻辑电路、摄像头、压力检测等发射与传感单元。以提高显示面板的集成度，提升面板附加值，节省整机空间。', '本揭示提供一种显示面板及显示装置。显示面板包括多个像素单元和功能元件。每个像素单元包括子像素，子像素包括第一Micro LED芯片，在俯视视角下，相邻两个第一Micro LED芯片之间设有间隙。功能元件设置于所述间隙处。其中所述功能元件的功能与所述子像素的显示功能不同。通过采用极小尺寸的Micro LED芯片作为基本子像素，从而在Micro LED子像素空间中预留一定的功能集成区，用于承接功能元件。功能元件包括通讯天线、生物识别、储能电池、存储单元、逻辑电路、摄像头、压力检测等发射与传感单元。以提高显示面板的集成度，提升面板附加值，节省整机空间。', 'CN202010547126.6', 1592236800, 'CN111627346A', 1599148800, 1599148800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 19, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 2, 2, 2, 0, NULL, '916', NULL, NULL, NULL, NULL, 'WO2021253703A1 | WO2022000795A1', NULL, 1, '\\20220510\\7df4f4c1fdb940f5b4dfd40c0487394e.png', NULL, NULL, 1, NULL, NULL, 16, NULL, NULL, NULL, 41180, 41182, 41181, 3);
INSERT INTO `os_patent` VALUES (23870, '显示面板及其制备方法、显示装置', '显示面板及其制备方法、显示装置', 'CN111627952A', '本揭示提供一种显示面板及其制备方法以及显示装置。显示面板包括驱动背板、功能元件组、及Micro LED芯片。功能元件组集成在像素单元内未设置Micro LED芯片的区域并复用为对位标记。在Micro LED芯片的巨量转移过程中，通过把部分功能元件复用为对位标记，在保证对位精度的前提下，避免对位标记额外占用像素空间。', '本揭示提供一种显示面板及其制备方法以及显示装置。显示面板包括驱动背板、功能元件组、及Micro LED芯片。功能元件组集成在像素单元内未设置Micro LED芯片的区域并复用为对位标记。在Micro LED芯片的巨量转移过程中，通过把部分功能元件复用为对位标记，在保证对位精度的前提下，避免对位标记额外占用像素空间。', 'CN202010566097.8', 1592496000, 'CN111627952A', 1599148800, 1599148800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 3, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 20, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 4, NULL, NULL, 15, 1, 1, 1, 0, NULL, '916', NULL, NULL, NULL, 'CN106502060A | CN108269786A | CN108668426A | CN109830191A | CN109830521A | CN110571254A | CN111160287A | CN206400216U | JP1990234116A | US20010021548A1 | US20050023706A1 | US20060267481A1 | US20170172432A1 | US20190043916A1 | US20190123307A1', 'WO2021253703A1', NULL, 1, '\\20220510\\a0a73cbf346c45078d2ecc831eb7861a.png', NULL, NULL, 1, NULL, NULL, 17, NULL, NULL, NULL, 41183, 41185, 41184, 4);
INSERT INTO `os_patent` VALUES (23871, '显示面板', '显示面板', 'CN111638606B', '本发明提供了一种显示面板，其包括液晶显示层以及透光显示层所述透光显示层具有第一像素，所述液晶显示层具有第二像素。靠近所述液晶显示层的第一像素的尺寸小于远离所述液晶显示层的第一像素的尺寸。和/或远离所述透光显示层的第二像素的尺寸小于靠近所述透光显示层的第二像素的尺寸。', '本发明提供了一种显示面板，其包括液晶显示层以及透光显示层所述透光显示层具有第一像素，所述液晶显示层具有第二像素。靠近所述液晶显示层的第一像素的尺寸小于远离所述液晶显示层的第一像素的尺寸。和/或远离所述透光显示层的第二像素的尺寸小于靠近所述透光显示层的第二像素的尺寸。', 'CN202010527293.4', 1591804800, 'CN111638606B', 1638460800, 1599494400, NULL, 1638460800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 19, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 5, 0, 0, 0, 0, NULL, '916', NULL, '李研研', NULL, 'CN110148374A | CN110491909A | CN110518037A | CN110703510A | CN208271472U', NULL, NULL, 1, '\\20220510\\a510e2bcd733417681e537038d1a0158.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 41186, 41188, 41187, 3);
INSERT INTO `os_patent` VALUES (23872, '微型发光二极管显示面板及其制作方法、显示装置', '微型发光二极管显示面板及其制作方法、显示装置', 'CN111653212B', '本申请提出了一种微型发光二极管显示面板，包括：多个微型发光二极管；阵列基板，包括第一金属层，第一金属层包括多个第一连接电极和多个第二连接电极，每一第一连接电极和对应的第二连接电极电性连接于对应的微型发光二极管；其中，多个第一连接电极和多个第二连接电极中的至少一个为复用电极，在显示阶段，每一复用电极驱动对应的微型发光二极管发光；其中，在触控阶段，每一复用电极复用为触控电极。', '本申请提出了一种微型发光二极管显示面板，包括：多个微型发光二极管；阵列基板，包括第一金属层，第一金属层包括多个第一连接电极和多个第二连接电极，每一第一连接电极和对应的第二连接电极电性连接于对应的微型发光二极管；其中，多个第一连接电极和多个第二连接电极中的至少一个为复用电极，在显示阶段，每一复用电极驱动对应的微型发光二极管发光；其中，在触控阶段，每一复用电极复用为触控电极。', 'CN202010525366.6', 1591718400, 'CN111653212B', 1632412800, 1599753600, NULL, 1632412800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 4, 0, 0, 0, 0, NULL, '916', NULL, '杨丹丹', NULL, 'CN109037285A | CN109407406A | CN109782959A | CN110010021A', NULL, NULL, 1, '\\20220510\\9109fa510ef14f37b7c9185889cd2d5d.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 41189, 41191, 41190, 3);
INSERT INTO `os_patent` VALUES (23873, '显示面板及其制备方法、显示装置', '显示面板及其制备方法、显示装置', 'CN111653585A', '本申请公开了一种显示面板及其制备方法、显示装置，所述显示面板包括第一显示区，所述显示面板包括：多个第一像素单元，多个所述第一像素单元位于所述第一显示区内，每个所述第一像素单元包括透光区和与所述透光区相邻设置的发光器件；第一基板，所述第一基板包括位于所述第一显示区内的第一部分，所述第一部分包括第一驱动电路以及位于所述第一驱动电路之上的电连接线；其中，所述发光器件安装于所述第一部分，所述发光器件包括背离所述第一驱动电路的电极，所述电极通过所述电连接线与所述第一驱动电路电性连接，以使所述显示面板实现屏下传感技术与光学显示在空间上的重合，降低所述显示面板的厚度。', '本申请公开了一种显示面板及其制备方法、显示装置，所述显示面板包括第一显示区，所述显示面板包括：多个第一像素单元，多个所述第一像素单元位于所述第一显示区内，每个所述第一像素单元包括透光区和与所述透光区相邻设置的发光器件；第一基板，所述第一基板包括位于所述第一显示区内的第一部分，所述第一部分包括第一驱动电路以及位于所述第一驱动电路之上的电连接线；其中，所述发光器件安装于所述第一部分，所述发光器件包括背离所述第一驱动电路的电极，所述电极通过所述电连接线与所述第一驱动电路电性连接，以使所述显示面板实现屏下传感技术与光学显示在空间上的重合，降低所述显示面板的厚度。', 'CN202010566417.X', 1592496000, 'CN111653585A', 1599753600, 1599753600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 21, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 8, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN109300951A | CN110275340A | CN110568649A | CN110794604A | CN111243534A | CN111596484A | CN111596485A | CN208210033U', NULL, NULL, 1, '\\20220510\\3a7a59cb47f84bdc8fd7c4e2935ef9b2.png', NULL, NULL, 1, NULL, NULL, 19, NULL, NULL, NULL, 41192, 41194, 41193, 2);
INSERT INTO `os_patent` VALUES (23874, '显示模组', '显示模组', 'CN111665994A', '本申请提供一种显示模组，在显示模组中，多条所述第二触控电极与所述第一触控电极交叉设置；所述第二触控电极与所述第一触控电极之间形成互电容结构；多个所述第三触控电极至少设置在所述触控层远离所述触控控制模块的一端；多个所述第三触控电极一一对应地并排设置在每条所述第一触控电极的末端，且每个所述第三触控电极与对应的所述第一触控电极形成互电容结构。本申请通过在每条第一触控电极和第二触控电极通道的共同的远端区域增设一根与第一触控电极互电容的第三触控电极，提高了显示模组远离触控控制模块的部分的边缘区域的触控灵敏度。', '本申请提供一种显示模组，在显示模组中，多条所述第二触控电极与所述第一触控电极交叉设置；所述第二触控电极与所述第一触控电极之间形成互电容结构；多个所述第三触控电极至少设置在所述触控层远离所述触控控制模块的一端；多个所述第三触控电极一一对应地并排设置在每条所述第一触控电极的末端，且每个所述第三触控电极与对应的所述第一触控电极形成互电容结构。本申请通过在每条第一触控电极和第二触控电极通道的共同的远端区域增设一根与第一触控电极互电容的第三触控电极，提高了显示模组远离触控控制模块的部分的边缘区域的触控灵敏度。', 'CN202010576230.8', 1592755200, 'CN111665994A', 1600099200, 1600099200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\a25390a8a20f4542b422c9979fa357d4.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41195, 41197, 41196, 1);
INSERT INTO `os_patent` VALUES (23875, '显示面板及其制备方法', '显示面板及其制备方法', 'CN111668233A', '本申请提供一种显示面板及其制备方法，显示面板包括基板、薄膜晶体管层、反射层、附加层和迷你发光二极管，薄膜晶体管层设置于基板上，反射层设置于薄膜晶体管层上，反射层由两种不同折射率的材料交替层叠设置形成，反射层具有第一通孔，第一通孔暴露薄膜晶体管层，附加层设置于反射层上，附加层具有第二通孔，第一通孔与第二通孔贯通以暴露薄膜晶体管层，附加层包括微粒，迷你发光二极管设置于第一通孔和第二通孔中以电连接薄膜晶体管层。在本申请中，在反射层上设置附加层，提高了光的利用率，并提高了光线的均匀性，进而提高了显示面板的性能。', '本申请提供一种显示面板及其制备方法，显示面板包括基板、薄膜晶体管层、反射层、附加层和迷你发光二极管，薄膜晶体管层设置于基板上，反射层设置于薄膜晶体管层上，反射层由两种不同折射率的材料交替层叠设置形成，反射层具有第一通孔，第一通孔暴露薄膜晶体管层，附加层设置于反射层上，附加层具有第二通孔，第一通孔与第二通孔贯通以暴露薄膜晶体管层，附加层包括微粒，迷你发光二极管设置于第一通孔和第二通孔中以电连接薄膜晶体管层。在本申请中，在反射层上设置附加层，提高了光的利用率，并提高了光线的均匀性，进而提高了显示面板的性能。', 'CN202010511266.8', 1591545600, 'CN111668233A', 1600099200, 1600099200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 3, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\24b89f09c2e54aa3bb41045d436c5c86.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41198, 41200, 41199, 3);
INSERT INTO `os_patent` VALUES (23876, '显示面板及其制备方法', '显示面板及其制备方法', 'CN111668234A', '本申请提供一种显示面板及其制备方法，显示面板包括基板、薄膜晶体管层、反射层和迷你发光二极管，薄膜晶体管层设置于基板上，反射层设置于薄膜晶体管层上，反射层由两种不同折射率的材料交替层叠设置形成，反射层具有通孔，通孔暴露薄膜晶体管层，迷你发光二极管设置于通孔中以电连接薄膜晶体管层。在本申请中，反射层采用两种不同折射率的材料形成，将反射层与迷你发光二极管结合，提高了光的利用率，并降低了功耗，进而提高了显示面板的性能。', '本申请提供一种显示面板及其制备方法，显示面板包括基板、薄膜晶体管层、反射层和迷你发光二极管，薄膜晶体管层设置于基板上，反射层设置于薄膜晶体管层上，反射层由两种不同折射率的材料交替层叠设置形成，反射层具有通孔，通孔暴露薄膜晶体管层，迷你发光二极管设置于通孔中以电连接薄膜晶体管层。在本申请中，反射层采用两种不同折射率的材料形成，将反射层与迷你发光二极管结合，提高了光的利用率，并降低了功耗，进而提高了显示面板的性能。', 'CN202010511268.7', 1591545600, 'CN111668234A', 1600099200, 1600099200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\7174eed2ac794e2d99170b8b66dd8276.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41201, 41203, 41202, 1);
INSERT INTO `os_patent` VALUES (23877, '显示面板及其制备方法', '显示面板及其制备方法', 'CN111668235A', '本申请提供一种显示面板及其制备方法，显示面板包括基板、薄膜晶体管层、反射层和迷你发光二极管，薄膜晶体管层设置于基板上，反射层由一第一分层、若干第二分层和若干第三分层组成，第一分层采用第一种折射率材料形成，若干第二分层采用第二种折射率材料形成，若干第三分层采用第三种折射率材料形成，反射层具有通孔，通孔暴露薄膜晶体管层，迷你发光二极管设置于通孔中，以电连接薄膜晶体管层。通过两种不同的折射率材料交替层叠设置形成反射层，提高了迷你发光二极管的光利用率，并降低了功率消耗，进而提高了显示面板的性能。', '本申请提供一种显示面板及其制备方法，显示面板包括基板、薄膜晶体管层、反射层和迷你发光二极管，薄膜晶体管层设置于基板上，反射层由一第一分层、若干第二分层和若干第三分层组成，第一分层采用第一种折射率材料形成，若干第二分层采用第二种折射率材料形成，若干第三分层采用第三种折射率材料形成，反射层具有通孔，通孔暴露薄膜晶体管层，迷你发光二极管设置于通孔中，以电连接薄膜晶体管层。通过两种不同的折射率材料交替层叠设置形成反射层，提高了迷你发光二极管的光利用率，并降低了功率消耗，进而提高了显示面板的性能。', 'CN202010511582.5', 1591545600, 'CN111668235A', 1600099200, 1600099200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 12, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 1, 1, 1, 0, NULL, '916', NULL, NULL, NULL, NULL, 'CN112241088A', NULL, 1, '\\20220510\\c4d969fe06dd4d229dc6a0c07b5ed0d8.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41204, 41206, 41205, 1);
INSERT INTO `os_patent` VALUES (23878, '显示面板及其制作方法', '显示面板及其制作方法', 'CN111668249A', '一种显示面板及其制作方法，包括：第一基板；第二基板，正对于第一基板进行设置；驱动电路，相对第一基板，靠近第二基板一侧进行设置；色阻层，正对于驱动电路，靠近第一基板一侧进行设置；色阻层包括彩色色阻层和彩色量子点层，且驱动电路为底发射型微型发光二极管驱动电路；有益效果：蓝色微型发光二极管层具有一定的预设厚度，避免了芯片高度过高，在上下基板对组的过程中压力压碎蓝色微型发光二极管层的可能，白胶保护蓝色微型发光二极管同时对蓝色微型发光二极管层所发出的光进行反射，提高了光线的利用率和对比度。', '一种显示面板及其制作方法，包括：第一基板；第二基板，正对于第一基板进行设置；驱动电路，相对第一基板，靠近第二基板一侧进行设置；色阻层，正对于驱动电路，靠近第一基板一侧进行设置；色阻层包括彩色色阻层和彩色量子点层，且驱动电路为底发射型微型发光二极管驱动电路；有益效果：蓝色微型发光二极管层具有一定的预设厚度，避免了芯片高度过高，在上下基板对组的过程中压力压碎蓝色微型发光二极管层的可能，白胶保护蓝色微型发光二极管同时对蓝色微型发光二极管层所发出的光进行反射，提高了光线的利用率和对比度。', 'CN202010489129.9', 1591027200, 'CN111668249A', 1600099200, 1600099200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 15, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 6, 5, 5, 5, 0, NULL, '916', NULL, NULL, NULL, 'CN107393938A | CN108807450A | CN110429096A | CN111052418A | WO2019230328A1 | WO2020100301A1', 'CN112578596A | CN112786764A | CN112786764B | CN113270440A | CN113270440B', NULL, 1, '\\20220510\\4de1eea5b6c14d90b02f83a4f9625a56.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41207, 41209, 41208, 2);
INSERT INTO `os_patent` VALUES (23879, '一种液晶显示模组及显示装置', '一种液晶显示模组及显示装置', 'CN111679468A', '本申请公开了一种液晶显示模组及显示装置，该液晶显示模组包括液晶显示面板和柔性电路板，该液晶显示面板在下边框区域内形成点灯测试端子，在点灯测试端子上绑定指纹识别信号灯，在信号转换区内，点灯测试端子形成有指纹识别信号灯的指纹驱动端子。在液晶显示模组测试完成后，本申请通过在点灯测试端子上设置指纹识别信号灯和指纹驱动端子，可以合理利用下边框面积，在不增加液晶显示模组下边框及不损失面板透过率的情况下，将信号灯合理放置。', '本申请公开了一种液晶显示模组及显示装置，该液晶显示模组包括液晶显示面板和柔性电路板，该液晶显示面板在下边框区域内形成点灯测试端子，在点灯测试端子上绑定指纹识别信号灯，在信号转换区内，点灯测试端子形成有指纹识别信号灯的指纹驱动端子。在液晶显示模组测试完成后，本申请通过在点灯测试端子上设置指纹识别信号灯和指纹驱动端子，可以合理利用下边框面积，在不增加液晶显示模组下边框及不损失面板透过率的情况下，将信号灯合理放置。', 'CN202010616861.8', 1593446400, 'CN111679468A', 1600358400, 1600358400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\4fd38b5d6a464004b9a40fc30f69e870.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41210, 41212, 41211, 1);
INSERT INTO `os_patent` VALUES (23880, '一种液晶显示装置', '一种液晶显示装置', 'CN111679478A', '本申请公开了一种液晶显示装置，所述液晶显示装置包括层叠设置的保护盖板、液晶显示面板、背光模组；其中，背光模组包括发射背光的第一光源、提供指纹识别信号的第二光源、指纹传感器、背光驱动芯片和指纹识别芯片，背光驱动芯片用于驱动第一光源，指纹识别芯片用于驱动第二光源和调节指纹识别信号光的强度。通过将第一光源和第二光源设置在背光模组内，减少了液晶显示装置的厚度，在不增加液晶显示装置下边框及不损失面板透过率的情况下，将指纹识别光源合理放置。', '本申请公开了一种液晶显示装置，所述液晶显示装置包括层叠设置的保护盖板、液晶显示面板、背光模组；其中，背光模组包括发射背光的第一光源、提供指纹识别信号的第二光源、指纹传感器、背光驱动芯片和指纹识别芯片，背光驱动芯片用于驱动第一光源，指纹识别芯片用于驱动第二光源和调节指纹识别信号光的强度。通过将第一光源和第二光源设置在背光模组内，减少了液晶显示装置的厚度，在不增加液晶显示装置下边框及不损失面板透过率的情况下，将指纹识别光源合理放置。', 'CN202010604539.3', 1593360000, 'CN111679478A', 1600358400, 1600358400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 10, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN102043272A | CN102576164A | CN109031782A | CN110865489A | CN110928019A | CN111061090A | CN111812900A | CN210123562U | US20090027358A1 | US20120062817A1', NULL, NULL, 1, '\\20220510\\9b1ed0690e90410080961714c8adf08a.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41213, 41215, 41214, 1);
INSERT INTO `os_patent` VALUES (23881, '背光模组及其制作方法、显示终端', '背光模组及其制作方法、显示终端', 'CN111679496A', '本揭示提供一种背光模组及其制作方法、显示终端，背光模组包括基板、薄膜晶体管阵列层、发光元件以及保护层，薄膜晶体管阵列层包括多个薄膜晶体管，薄膜晶体管包括栅极、有源层、源极以及漏极，发光元件设置于薄膜晶体管阵列层远离基板的一侧上，保护层设置于薄膜晶体管阵列层远离基板的一侧上，有源层在基板上的正投影区域位于保护层在基板上的正投影区域内，遮光保护层的材料包括抗眩光材料，抗眩光材料内含有无机纳米粒子，用于对发光元件射向有源层的光线产生漫反射的作用，并提高遮光保护层的硬度，以此在防止薄膜晶体管阵列层内部薄膜晶体管器件损伤的同时，还可以阻挡发光元件发出的光线照射至有源层，保证薄膜晶体管的性能和稳定性。', '本揭示提供一种背光模组及其制作方法、显示终端，背光模组包括基板、薄膜晶体管阵列层、发光元件以及保护层，薄膜晶体管阵列层包括多个薄膜晶体管，薄膜晶体管包括栅极、有源层、源极以及漏极，发光元件设置于薄膜晶体管阵列层远离基板的一侧上，保护层设置于薄膜晶体管阵列层远离基板的一侧上，有源层在基板上的正投影区域位于保护层在基板上的正投影区域内，遮光保护层的材料包括抗眩光材料，抗眩光材料内含有无机纳米粒子，用于对发光元件射向有源层的光线产生漫反射的作用，并提高遮光保护层的硬度，以此在防止薄膜晶体管阵列层内部薄膜晶体管器件损伤的同时，还可以阻挡发光元件发出的光线照射至有源层，保证薄膜晶体管的性能和稳定性。', 'CN202010528578.X', 1591804800, 'CN111679496A', 1600358400, 1600358400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 1, 1, 1, 0, NULL, '916', NULL, NULL, NULL, NULL, 'CN112768590A', NULL, 1, '\\20220510\\b8c6d6e5d6444d77a1c518eb9a992942.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41216, 41218, 41217, 1);
INSERT INTO `os_patent` VALUES (23882, '背光模组及显示装置', '背光模组及显示装置', 'CN111679498A', '本申请公开了一种背光模组及显示装置，背光模组包括：基板以及设置于基板上的复数个发光器件，其中，基板具有一中心区域和围绕中心区域的至少一边缘区域，基板还具有一连续的第一表面，第一表面从中心区域延伸至边缘区域，并且，在边缘区域内，第一表面还包括一延伸面，延伸面为第一表面在边缘区域内偏离中心区域而形成的表面；基板在边缘区域的厚度小于基板在中心区域的厚度。', '本申请公开了一种背光模组及显示装置，背光模组包括：基板以及设置于基板上的复数个发光器件，其中，基板具有一中心区域和围绕中心区域的至少一边缘区域，基板还具有一连续的第一表面，第一表面从中心区域延伸至边缘区域，并且，在边缘区域内，第一表面还包括一延伸面，延伸面为第一表面在边缘区域内偏离中心区域而形成的表面；基板在边缘区域的厚度小于基板在中心区域的厚度。', 'CN202010573507.1', 1592755200, 'CN111679498A', 1600358400, 1600358400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 9, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN109461386A | CN109782489A | CN110400519A | CN110634400A | CN111007917A | CN111179769A | CN201651946U | CN210666266U | JP2010161046A', NULL, NULL, 1, '\\20220510\\3d28badd45834e0db4315bd0f1d8e447.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41219, 41221, 41220, 1);
INSERT INTO `os_patent` VALUES (23883, '柔性背光模组和液晶显示面板', '柔性背光模组和液晶显示面板', 'CN111679502B', '本申请提供了一种柔性背光模组和液晶显示面板，包括：导光板，所述导光板包括出光面、底面和至少一个的入光面，所述入光面与出光面垂直且相邻，所述出光面与底面相对设置；背光源，所述背光源位于所述导光板的入光面；柔性发光膜层，所述出光面设置有一条或多条沟槽，所述柔性发光膜层设置在所述沟槽内，通过在导光板的出光面设置多条有柔性发光膜层的沟槽，可以释放一部分弯曲应力，实现导光板的可弯曲性，以及解决因显示器面板弯曲而导致显示器背光分布不均匀的问题。', '本申请提供了一种柔性背光模组和液晶显示面板，包括：导光板，所述导光板包括出光面、底面和至少一个的入光面，所述入光面与出光面垂直且相邻，所述出光面与底面相对设置；背光源，所述背光源位于所述导光板的入光面；柔性发光膜层，所述出光面设置有一条或多条沟槽，所述柔性发光膜层设置在所述沟槽内，通过在导光板的出光面设置多条有柔性发光膜层的沟槽，可以释放一部分弯曲应力，实现导光板的可弯曲性，以及解决因显示器面板弯曲而导致显示器背光分布不均匀的问题。', 'CN202010594560.X', 1593273600, 'CN111679502B', 1626969600, 1600358400, NULL, 1626969600, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 8, 0, 0, 0, 0, NULL, '916', NULL, '刘志玲', NULL, 'CN101482247A | CN103438390A | CN110312017A | CN1991496A | CN201314524Y | CN204062660U | JP2009176593A | JP2013148689A', NULL, NULL, 1, '\\20220510\\0e7d955e8fb6478dacd5d12989cbc236.png', NULL, NULL, 1, NULL, NULL, 13, NULL, NULL, NULL, 41222, 41224, 41223, 3);
INSERT INTO `os_patent` VALUES (23884, '显示面板及其制造方法', '显示面板及其制造方法', 'CN111681598A', '本申请提供一种显示面板，所述显示面板包括基板以及设置在所述基板上的多个显示单元，所述多个显示单元呈阵列排布；其中，每个所述显示单元内集成有微发光二极管芯片以及与所述微发光二极管芯片电连接的脉冲宽度调制芯片，所述脉冲宽度调制芯片中形成有脉冲宽度调制电路，所述脉冲宽度调制电路用于控制所述微发光二极管芯片的发光时间。', '本申请提供一种显示面板，所述显示面板包括基板以及设置在所述基板上的多个显示单元，所述多个显示单元呈阵列排布；其中，每个所述显示单元内集成有微发光二极管芯片以及与所述微发光二极管芯片电连接的脉冲宽度调制芯片，所述脉冲宽度调制芯片中形成有脉冲宽度调制电路，所述脉冲宽度调制电路用于控制所述微发光二极管芯片的发光时间。', 'CN202010495062.X', 1591113600, 'CN111681598A', 1600358400, 1600358400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 12, 4, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 5, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN110085164A | CN110556072A | CN110634433A | CN110649060A | CN111210765A', NULL, NULL, 1, '\\20220510\\b1ce62de4bc14d748629f6cf019a2d56.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41225, 41227, 41226, 2);
INSERT INTO `os_patent` VALUES (23885, '一种显示面板及其制备方法、显示装置', '一种显示面板及其制备方法、显示装置', 'CN111682044A', '本申请提供一种显示面板及其制备方法、显示装置，显示面板包括显示区和围绕显示区的非显示区，显示区包括多个像素区域；显示面板包括基板以及设置在基板上的焊垫和信号线，焊垫对应像素区域设置，且焊垫与信号线电连接；焊垫的材料包括钼/铜的叠层、钼钛合金/铜的叠层以及钛钼镍合金/铜的叠层中的至少一种；其中，微型发光二极管上的焊接电极通过焊接材料与焊垫电连接。本申请采用钼/铜的叠层材料制备绑定焊垫，能够有效解决现有技术中MTD与焊接材料结合力较差的问题；同时采用钛钼镍合金/铜/钛钼镍合金叠层制备绑定引线，可以减少显示面板制程，降低制造成本。', '本申请提供一种显示面板及其制备方法、显示装置，显示面板包括显示区和围绕显示区的非显示区，显示区包括多个像素区域；显示面板包括基板以及设置在基板上的焊垫和信号线，焊垫对应像素区域设置，且焊垫与信号线电连接；焊垫的材料包括钼/铜的叠层、钼钛合金/铜的叠层以及钛钼镍合金/铜的叠层中的至少一种；其中，微型发光二极管上的焊接电极通过焊接材料与焊垫电连接。本申请采用钼/铜的叠层材料制备绑定焊垫，能够有效解决现有技术中MTD与焊接材料结合力较差的问题；同时采用钛钼镍合金/铜/钛钼镍合金叠层制备绑定引线，可以减少显示面板制程，降低制造成本。', 'CN202010663708.0', 1594310400, 'CN111682044A', 1600358400, 1600358400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 3, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 14, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 6, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN103107181A | CN110416248A | CN110752194A | CN111312742A | CN208284480U | US20200212022A1', NULL, NULL, 1, '\\20220510\\8d2f59236a0148598e0dffab3afc3d2b.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41228, 41230, 41229, 3);
INSERT INTO `os_patent` VALUES (23886, '显示面板及显示装置', '显示面板及显示装置', 'CN111694180A', '本申请公开一种显示面板及显示装置，所述显示面板包括：多个间隔设置的像素单元；至少一光传感器，在俯视视角下，每一所述光传感器位于对应的所述像素单元的一侧，所述光传感器用于将接收的光能转换为电能，以实现节能的效果，提升显示面板的续航能力。', '本申请公开一种显示面板及显示装置，所述显示面板包括：多个间隔设置的像素单元；至少一光传感器，在俯视视角下，每一所述光传感器位于对应的所述像素单元的一侧，所述光传感器用于将接收的光能转换为电能，以实现节能的效果，提升显示面板的续航能力。', 'CN202010547580.1', 1592236800, 'CN111694180A', 1600704000, 1600704000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 21, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 10, 1, 1, 1, 0, NULL, '916', NULL, NULL, NULL, 'CN103236435A | CN107436458A | CN109031824A | CN109411521A | CN109950235A | CN110989870A | CN206060339U | CN211555891U | JP2008305154A | US20110057908A1', 'CN112083593A', NULL, 1, '\\20220510\\d8bb54c99eb941dfac23e86537fc8996.png', NULL, NULL, 1, NULL, NULL, 20, NULL, NULL, NULL, 41231, 41233, 41232, 2);
INSERT INTO `os_patent` VALUES (23887, '显示面板和显示装置', '显示面板和显示装置', 'CN111697022A', '本申请实施例提供一种显示面板和显示装置，该显示面板通过将第一柔性层与第二柔性层的材料设置为不同，且使得第一柔性层和第二柔性层的内应力方向相反，使得在制备显示面板时，可以使得第一柔性层与第二柔性层的内应力相互抵消，从而使得第一柔性层和第二柔性层不出现翘曲，且第一柔性层和第二柔性层不出现卷曲，显示面板不出现翘曲，且牺牲层可以避免第一柔性层出现碳化的现象，解决了现有MicroLED显示面板存在黄色聚酰亚胺出现翘曲，导致MicroLED显示面板出现翘曲的技术问题。', '本申请实施例提供一种显示面板和显示装置，该显示面板通过将第一柔性层与第二柔性层的材料设置为不同，且使得第一柔性层和第二柔性层的内应力方向相反，使得在制备显示面板时，可以使得第一柔性层与第二柔性层的内应力相互抵消，从而使得第一柔性层和第二柔性层不出现翘曲，且第一柔性层和第二柔性层不出现卷曲，显示面板不出现翘曲，且牺牲层可以避免第一柔性层出现碳化的现象，解决了现有MicroLED显示面板存在黄色聚酰亚胺出现翘曲，导致MicroLED显示面板出现翘曲的技术问题。', 'CN202010653155.0', 1594137600, 'CN111697022A', 1600704000, 1600704000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 16, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 1, 1, 1, 0, NULL, '916', NULL, NULL, NULL, NULL, 'CN112662259A', NULL, 1, '\\20220510\\b536f4a9d46e4f3d8ce3478c0f0af932.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41234, 41236, 41235, 2);
INSERT INTO `os_patent` VALUES (23888, '显示面板及显示装置', '显示面板及显示装置', 'CN111708196A', '本申请提供一种显示面板、显示装置，包括第一像素区域和邻近第一像素区域的第二像素区域，该显示面板包括相对设置的阵列基板和彩膜基板、位于阵列基板与彩膜基板之间的液晶层，以及背光模组，位于彩膜基板背向阵列基板的一侧；其中，显示面板包括设置在第一像素区域内的多个Micro LED发光单元，且多个Micro LED发光单元之间设有透光区；彩膜基板包括设置在第二像素区域的彩色色阻。本申请通过在显示面板对应第一像素区域设置Micro LED发光单元，从而解决了在LCD屏中光学式传感器与光学显示无法在空间上重合的问题，进而使LCD屏能够满足人们对全面屏的极致需求。', '本申请提供一种显示面板、显示装置，包括第一像素区域和邻近第一像素区域的第二像素区域，该显示面板包括相对设置的阵列基板和彩膜基板、位于阵列基板与彩膜基板之间的液晶层，以及背光模组，位于彩膜基板背向阵列基板的一侧；其中，显示面板包括设置在第一像素区域内的多个Micro LED发光单元，且多个Micro LED发光单元之间设有透光区；彩膜基板包括设置在第二像素区域的彩色色阻。本申请通过在显示面板对应第一像素区域设置Micro LED发光单元，从而解决了在LCD屏中光学式传感器与光学显示无法在空间上重合的问题，进而使LCD屏能够满足人们对全面屏的极致需求。', 'CN202010578189.8', 1592841600, 'CN111708196A', 1600963200, 1600963200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 3, NULL, NULL, 4, 1, 1, 1, 0, NULL, '916', NULL, NULL, NULL, 'CN110275340A | CN110632789A | CN110794604A | US20190373166A1', 'WO2021248783A1', NULL, 1, '\\20220510\\0d27ccb8491f497198885d361d5d1fdd.png', NULL, NULL, 1, NULL, NULL, 13, NULL, NULL, NULL, 41237, 41239, 41238, 3);
INSERT INTO `os_patent` VALUES (23889, '一种基于量子点的LED显示器及其制备方法', '一种基于量子点的LED显示器及其制备方法', 'CN111710690A', '本发明提供一种基于量子点的LED显示器及其制备方法，包括：第一基板和第二基板，相对设置；若干光转换单元，相互间隔的分布在所述第一基板朝向所述第二基板的一面；若干Mini LED或Micro LED，相互间隔的分布在所述第二基板朝向所述第一基板的一面，每一光转换单元对应一所述Mini LED或Micro LED；第一遮光层，设于所述第一基板朝向所述第二基板的一面，所述第一遮光层用以间隔所述光转换单元；以及第二遮光层，设于所述第二基板朝向所述第一基板的一面，所述第二遮光层用以间隔所述Mini LED或Micro LED，所述第一遮光层的位置正对所述第二遮光层。', '本发明提供一种基于量子点的LED显示器及其制备方法，包括：第一基板和第二基板，相对设置；若干光转换单元，相互间隔的分布在所述第一基板朝向所述第二基板的一面；若干Mini LED或Micro LED，相互间隔的分布在所述第二基板朝向所述第一基板的一面，每一光转换单元对应一所述Mini LED或Micro LED；第一遮光层，设于所述第一基板朝向所述第二基板的一面，所述第一遮光层用以间隔所述光转换单元；以及第二遮光层，设于所述第二基板朝向所述第一基板的一面，所述第二遮光层用以间隔所述Mini LED或Micro LED，所述第一遮光层的位置正对所述第二遮光层。', 'CN202010499700.5', 1591200000, 'CN111710690A', 1600963200, 1600963200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 5, 5, 5, 0, NULL, '916', NULL, NULL, NULL, NULL, 'CN112634826A | CN112634826B | CN112802938A | CN113078180A | CN113078180B', NULL, 1, '\\20220510\\e4d3ebf06cb149e9a04fff186185c60e.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41240, 41242, 41241, 1);
INSERT INTO `os_patent` VALUES (23890, '柔性Micro-LED显示面板及其制作方法', '柔性Micro-LED显示面板及其制作方法', 'CN111710691A', '本发明提供一种柔性Micro‑LED显示面板及其制作方法，柔性Micro‑LED显示面板包括第一衬底基板、薄膜晶体管阵列层、第一连接电极层、第二连接电极层，设置于所述第一连接电极层上、多个Micro‑LED芯片、柔性封装层以及设置于柔性封装层上的第二衬底基板，第一衬底基板和所述第二衬底基板均为柔性基板，通过在覆盖Micro‑LED芯片的柔性封装层上设置第二衬底基板来使柔性显示面板的中性层位于薄膜晶体管阵列层上，从而降低断线风险，实现Micro‑LED显示面板柔性显示。', '本发明提供一种柔性Micro‑LED显示面板及其制作方法，柔性Micro‑LED显示面板包括第一衬底基板、薄膜晶体管阵列层、第一连接电极层、第二连接电极层，设置于所述第一连接电极层上、多个Micro‑LED芯片、柔性封装层以及设置于柔性封装层上的第二衬底基板，第一衬底基板和所述第二衬底基板均为柔性基板，通过在覆盖Micro‑LED芯片的柔性封装层上设置第二衬底基板来使柔性显示面板的中性层位于薄膜晶体管阵列层上，从而降低断线风险，实现Micro‑LED显示面板柔性显示。', 'CN202010507058.0', 1591286400, 'CN111710691A', 1600963200, 1600963200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 6, 4, 4, 4, 0, NULL, '916', NULL, NULL, NULL, 'CN104081545A | CN105789252A | CN106876410A | CN107731863A | CN108470853A | US20150200238A1', 'CN112768590A | CN112928192A | CN112968114A | WO2021244022A1', NULL, 1, '\\20220510\\45d41f2533b2465897b709e9f870309f.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41243, 41245, 41244, 2);
INSERT INTO `os_patent` VALUES (23891, '背光模组及显示装置', '背光模组及显示装置', 'CN111752043A', '本发明提供了一种背光模组及显示装置，其中，背光模组具有面内开孔，背光模组还包括：光源装置和导光体，光源装置包括各自独立驱动控制的第一光源和第二光源；导光体设置于面内开孔的孔壁处，并与第一光源对应设置，用于在预定条件下将第一光源发出的光线提供至面内开孔的区域，相比于现有技术中，面内开孔仅仅作为其下方摄像装置的环境光的收发通道，而无光源提供亮度，上述实施例解决了现有技术中液晶显示装置的背光模组中的面内开孔无光源提供亮度的问题，从而实现在预定条件下具有亮度的背光模组的面内开孔。', '本发明提供了一种背光模组及显示装置，其中，背光模组具有面内开孔，背光模组还包括：光源装置和导光体，光源装置包括各自独立驱动控制的第一光源和第二光源；导光体设置于面内开孔的孔壁处，并与第一光源对应设置，用于在预定条件下将第一光源发出的光线提供至面内开孔的区域，相比于现有技术中，面内开孔仅仅作为其下方摄像装置的环境光的收发通道，而无光源提供亮度，上述实施例解决了现有技术中液晶显示装置的背光模组中的面内开孔无光源提供亮度的问题，从而实现在预定条件下具有亮度的背光模组的面内开孔。', 'CN202010660941.3', 1594310400, 'CN111752043A', 1602172800, 1602172800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 0, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 3, NULL, NULL, 8, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN108803143A | CN108803144A | CN109116621A | CN109683399A | CN110703486A | CN111176018A | CN210894768U | WO2013021987A1', NULL, NULL, 1, '\\20220510\\ccd307745a374a5e8fa7e56b3ec47f5d.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, NULL, 41246, 41248, 41247, 3);
INSERT INTO `os_patent` VALUES (23892, '背光模组及显示装置', '背光模组及显示装置', 'CN111752045A', '本发明提供了一种背光模组及显示装置，该背光模组包括：柔性基板；LED芯片，设置于柔性基板上；匀光扩散膜，设置于述Mini‑LED芯片上，匀光扩散膜包括液晶盒以及油墨层。相比于现有技术，本发明提供的背光模组去除了胶铁框和导光板，提高了背光模组的柔韧性，减小了所述背光模组弯折时的内应力，突破了背光模组不可挠的瓶颈，解决了现有液晶显示器存在背光模组不可挠的问题，提高了液晶显示装置的弯折性能；同时，利用匀光扩散膜调节背光模组的出光均匀性，提高了背光模组的混光效果，提高了液晶显示装置的显示效果。', '本发明提供了一种背光模组及显示装置，该背光模组包括：柔性基板；LED芯片，设置于柔性基板上；匀光扩散膜，设置于述Mini‑LED芯片上，匀光扩散膜包括液晶盒以及油墨层。相比于现有技术，本发明提供的背光模组去除了胶铁框和导光板，提高了背光模组的柔韧性，减小了所述背光模组弯折时的内应力，突破了背光模组不可挠的瓶颈，解决了现有液晶显示器存在背光模组不可挠的问题，提高了液晶显示装置的弯折性能；同时，利用匀光扩散膜调节背光模组的出光均匀性，提高了背光模组的混光效果，提高了液晶显示装置的显示效果。', 'CN202010680023.7', 1594742400, 'CN111752045A', 1602172800, 1602172800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 0, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 11, 1, 1, 1, 0, NULL, '916', NULL, NULL, NULL, 'CN103620664A | CN107544177A | CN109358453A | CN109597242A | CN109828408A | CN110275352A | CN110750009A | CN111308781A | CN111338126A | CN204083976U | CN209265142U', 'CN113156687A', NULL, 1, '\\20220510\\0b89c08bbc0f4c89a70b4f5e21cadb2a.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41249, 41251, 41250, 1);
INSERT INTO `os_patent` VALUES (23893, '像素驱动电路及其驱动方法、显示面板', '像素驱动电路及其驱动方法、显示面板', 'CN111754920A', '本申请公开了一种像素驱动电路及其驱动方法、显示面板，所述像素驱动电路包括：发光器件、驱动晶体管以及补偿模块；所述补偿模块至少包括：初始化晶体管及补偿晶体管；所述初始化晶体管用于响应第一扫描信号并将电位可变信号传输至所述驱动晶体管的栅极，初始化所述驱动晶体管的栅极电压；所述补偿晶体管用于响应补偿控制信号并将具有补偿阈值电压的数据信号传输至所述驱动晶体管的栅极；其中，所述初始化晶体管与所述补偿晶体管的类型不同；所述电位可变信号在发光阶段动态补偿所述驱动晶体管的栅极电压，以在发光阶段维持驱动晶体管的栅极电压稳定，降低驱动晶体管的源极或漏极对栅极电压的影响，改善显示面板的显示效果。', '本申请公开了一种像素驱动电路及其驱动方法、显示面板，所述像素驱动电路包括：发光器件、驱动晶体管以及补偿模块；所述补偿模块至少包括：初始化晶体管及补偿晶体管；所述初始化晶体管用于响应第一扫描信号并将电位可变信号传输至所述驱动晶体管的栅极，初始化所述驱动晶体管的栅极电压；所述补偿晶体管用于响应补偿控制信号并将具有补偿阈值电压的数据信号传输至所述驱动晶体管的栅极；其中，所述初始化晶体管与所述补偿晶体管的类型不同；所述电位可变信号在发光阶段动态补偿所述驱动晶体管的栅极电压，以在发光阶段维持驱动晶体管的栅极电压稳定，降低驱动晶体管的源极或漏极对栅极电压的影响，改善显示面板的显示效果。', 'CN202010694693.4', 1594915200, 'CN111754920A', 1602172800, 1602172800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 0, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 11, 11, 11, 0, NULL, '916', NULL, NULL, NULL, NULL, 'CN112233621A | CN112365843A | CN112397029A | CN112435628A | CN112435628B | CN112509517A | CN113140179A | CN113192458A | CN113192458B | CN113299230A | CN113450715A', NULL, 1, '\\20220510\\21b04631ff04497ab8b3b788fbf373f3.png', NULL, NULL, 1, NULL, NULL, 20, NULL, NULL, NULL, 41252, 41254, 41253, 2);
INSERT INTO `os_patent` VALUES (23894, '拼接显示屏', '拼接显示屏', 'CN111768716A', '本申请提供一种拼接显示屏，所述拼接显示屏包括若干面板和若干覆晶薄膜，每一面板包括相对设置的显示面和背面，沿所述显示面朝向所述背面的方向为第一方向，每一覆晶薄膜包括相对设置的第一表面和第二表面，沿所述第一表面朝向所述第二表面的方向为第二方向，一所述覆晶薄膜夹设于每两相邻的所述面板之间，所述第一方向与第二方向垂直。通过在每两相邻的面板之间夹设覆晶薄膜，减少了覆晶薄膜弯折不充分所占用的空间，进而减小了键合区的宽度，进而减小了每两相邻的面板之间的拼接缝。', '本申请提供一种拼接显示屏，所述拼接显示屏包括若干面板和若干覆晶薄膜，每一面板包括相对设置的显示面和背面，沿所述显示面朝向所述背面的方向为第一方向，每一覆晶薄膜包括相对设置的第一表面和第二表面，沿所述第一表面朝向所述第二表面的方向为第二方向，一所述覆晶薄膜夹设于每两相邻的所述面板之间，所述第一方向与第二方向垂直。通过在每两相邻的面板之间夹设覆晶薄膜，减少了覆晶薄膜弯折不充分所占用的空间，进而减小了键合区的宽度，进而减小了每两相邻的面板之间的拼接缝。', 'CN202010628083.4', 1593619200, 'CN111768716A', 1602518400, 1602518400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 6, 3, 3, 3, 0, NULL, '916', NULL, NULL, NULL, 'CN106842711A | CN108777114A | CN208622361U | CN210181979U | TW200617429A | WO2020114227A1', 'CN113075808A | CN113112925A | CN113112925B', NULL, 1, '\\20220510\\b889358726174a0098975d1eee93f29f.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41255, 41257, 41256, 1);
INSERT INTO `os_patent` VALUES (23895, '显示模组', '显示模组', 'CN111796463A', '本申请公开了一种显示模组，所述显示模组包括：显示面板，所述显示面板包括显示区与设于所述显示区外侧的边框区，所述边框区中设有多个焊盘；印制电路板；以及多条绑定导线，一端一一绑定于所述多个焊盘上，另一端与所述印制电路板电性连接。利用绑定导线将印制电路板与显示面板上的绑定焊盘直接相连，从而有效缩减显示模组边框的宽度，提升显示模组的外观效果，当其应用于拼接显示设备时，也能拥有更微小的拼缝。', '本申请公开了一种显示模组，所述显示模组包括：显示面板，所述显示面板包括显示区与设于所述显示区外侧的边框区，所述边框区中设有多个焊盘；印制电路板；以及多条绑定导线，一端一一绑定于所述多个焊盘上，另一端与所述印制电路板电性连接。利用绑定导线将印制电路板与显示面板上的绑定焊盘直接相连，从而有效缩减显示模组边框的宽度，提升显示模组的外观效果，当其应用于拼接显示设备时，也能拥有更微小的拼缝。', 'CN202010670569.4', 1594569600, 'CN111796463A', 1603123200, 1603123200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\9e4dd6adb9d747bcb2ec3af9373ae13c.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41258, 41260, 41259, 1);
INSERT INTO `os_patent` VALUES (23896, 'Mini LED背光模组及显示装置', 'Mini LED背光模组及显示装置', 'CN111798802B', '本申请提出了一种Mini LED背光模组及显示装置，所述Mini LED背光模组包括多个背光分区，每一所述背光分区内至少设置有两LED，每一所述LED的支路上均连接有一保护电路，所述保护电路包括与所述LED串联的整流模块、分别与所述LED的输出端和所述整流模块连接的控制模块，所述整流模块调节所述LED的支路电流；所述控制模块获取所述LED的输出端电压，并根据所述LED的输出端电压控制所述整流模块调节所述LED的支路电流保持在一设定范围内。', '本申请提出了一种Mini LED背光模组及显示装置，所述Mini LED背光模组包括多个背光分区，每一所述背光分区内至少设置有两LED，每一所述LED的支路上均连接有一保护电路，所述保护电路包括与所述LED串联的整流模块、分别与所述LED的输出端和所述整流模块连接的控制模块，所述整流模块调节所述LED的支路电流；所述控制模块获取所述LED的输出端电压，并根据所述LED的输出端电压控制所述整流模块调节所述LED的支路电流保持在一设定范围内。', 'CN202010645298.7', 1594051200, 'CN111798802B', 1633622400, 1603123200, NULL, 1633622400, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 13, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, '勒海', NULL, NULL, NULL, NULL, 1, '\\20220510\\f386cd5ec9374e218c1e1f68b67e4d3d.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 41261, 41263, 41262, 3);
INSERT INTO `os_patent` VALUES (23897, 'Mini LED背光模组及其制备方法、显示面板', 'Mini LED背光模组及其制备方法、显示面板', 'CN111812888A', '本申请提供了一种Mini LED背光模组及其制备方法、显示面板，根据背光需求在柔性基板上划分若干个背光分区，能改善背光模组的亮度均匀性；另外，在背光分区的每个背光子分区中将若干个呈阵列排布的Mini LED以串联和并联组合的方式形成并联模组布置，使背光模组的驱动电压和驱动电流都在合适范围内；同时，在柔性基板上还布置了第一金属图案，将每个第一子金属图案对应一个背光分区设置，将若干个并联模组通过第一子金属图案实现电性连接，由此使得外部输入信号通过每个第一子金属图案独立输入到每个背光子分区的各个Mini LED中，这样可以减小金属走线的电阻，从而减小IR压降效应，进一步提高背光模组的亮度均匀性。', '本申请提供了一种Mini LED背光模组及其制备方法、显示面板，根据背光需求在柔性基板上划分若干个背光分区，能改善背光模组的亮度均匀性；另外，在背光分区的每个背光子分区中将若干个呈阵列排布的Mini LED以串联和并联组合的方式形成并联模组布置，使背光模组的驱动电压和驱动电流都在合适范围内；同时，在柔性基板上还布置了第一金属图案，将每个第一子金属图案对应一个背光分区设置，将若干个并联模组通过第一子金属图案实现电性连接，由此使得外部输入信号通过每个第一子金属图案独立输入到每个背光子分区的各个Mini LED中，这样可以减小金属走线的电阻，从而减小IR压降效应，进一步提高背光模组的亮度均匀性。', 'CN202010663404.4', 1594310400, 'CN111812888A', 1603382400, 1603382400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 18, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 6, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN103688373A | CN107910322A | CN109116626A | CN110824766A | CN110972495A | US10634949B1', NULL, NULL, 1, '\\20220510\\5c7b29f20a35474b86a77dd8a9eeca35.png', NULL, NULL, 1, NULL, NULL, 19, NULL, NULL, NULL, 41264, 41266, 41265, 2);
INSERT INTO `os_patent` VALUES (23898, '转移装置及转移方法', '转移装置及转移方法', 'CN111863694A', '本发明公开了一种转移装置及转移方法，所述转移装置包括一基板和设置于所述基板上的至少一转移头，所述转移头包括：吸附器件和磁场发生器件，其中，磁场发生器件用于生成磁场以吸附磁性粒子在所述吸附区内形成接触层，所述吸附器件将Micro LED吸附于所述接触层的表面上；本发明所述转移装置及转移方法能使Micro LED均能够被磁性粒子充分的接触，进而能克服传统的静电转移头中存在的转移头与被吸取目标间的距离严重影响吸附力的大小的问题。', '本发明公开了一种转移装置及转移方法，所述转移装置包括一基板和设置于所述基板上的至少一转移头，所述转移头包括：吸附器件和磁场发生器件，其中，磁场发生器件用于生成磁场以吸附磁性粒子在所述吸附区内形成接触层，所述吸附器件将Micro LED吸附于所述接触层的表面上；本发明所述转移装置及转移方法能使Micro LED均能够被磁性粒子充分的接触，进而能克服传统的静电转移头中存在的转移头与被吸取目标间的距离严重影响吸附力的大小的问题。', 'CN202010691445.4', 1594915200, 'CN111863694A', 1603987200, 1603987200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 3, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 8, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN107527973A | CN109216400A | CN109755162A | CN109782463A | CN110379759A | CN111128813A | CN111244010A | US20110151588A1', NULL, NULL, 1, '\\20220510\\1ff15a012a5b49ed843ca874376ded69.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, NULL, 41267, 41269, 41268, 3);
INSERT INTO `os_patent` VALUES (23899, '一种显示装置', '一种显示装置', 'CN111899678A', '本申请公开了一种显示装置，包括：显示面板，扬声器安装部和扬声器；扬声器包括驱动线圈和驱动磁体，驱动线圈设于显示面板朝向扬声器安装部的一侧，驱动磁体位于扬声器安装部远离显示面板的一侧；驱动磁体用于产生磁场，驱动线圈用于在通电时，在驱动磁体产生的磁场中，带动显示面板在显示面的垂直方向上振动，使显示装置发出声音。该扬声器对应设置在显示区内，提高了显示装置的屏占比，提升了视觉效果。微米级别的驱动线圈通过打印等技术设置在显示面板的内部或表面，设置简单，体积小，不会降低显示面板的轻薄性。驱动磁体设置在显示面板内部或表面，更有效的驱动显示面板一起振动，适用于LCD或OLED等显示装置，应用领域广。', '本申请公开了一种显示装置，包括：显示面板，扬声器安装部和扬声器；扬声器包括驱动线圈和驱动磁体，驱动线圈设于显示面板朝向扬声器安装部的一侧，驱动磁体位于扬声器安装部远离显示面板的一侧；驱动磁体用于产生磁场，驱动线圈用于在通电时，在驱动磁体产生的磁场中，带动显示面板在显示面的垂直方向上振动，使显示装置发出声音。该扬声器对应设置在显示区内，提高了显示装置的屏占比，提升了视觉效果。微米级别的驱动线圈通过打印等技术设置在显示面板的内部或表面，设置简单，体积小，不会降低显示面板的轻薄性。驱动磁体设置在显示面板内部或表面，更有效的驱动显示面板一起振动，适用于LCD或OLED等显示装置，应用领域广。', 'CN202010639308.6', 1593964800, 'CN111899678A', 1604592000, 1604592000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 9, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN106098961A | CN107124685A | CN107241675A | CN108566602A | CN109729480A | CN111083605A | CN208273238U | CN209767592U | US20110002500A1', NULL, NULL, 1, '\\20220510\\e523dd4495134a2ea843530d06307822.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41270, 41272, 41271, 1);
INSERT INTO `os_patent` VALUES (23900, '拼接显示屏', '拼接显示屏', 'CN111951697B', '本申请提供一种拼接显示屏，包括电路板、若干显示面板以及若干第一金属线，所述电路板具有若干电路区域，每一电路区域包括一安装区域和一电连接区域，在所述电连接区域设置有若干第一金属部，每一所述显示面板设置于所述电路板且位于所述安装区域，所述显示面板包括设置于所述显示面板的显示面的金属连接垫，所述金属连接垫通过第一金属线与所述第一金属部电连接。通过第一金属线将显示面板上的金属连接垫与电连接电路板上的第一金属部电连接，减小拼接缝的缝隙。', '本申请提供一种拼接显示屏，包括电路板、若干显示面板以及若干第一金属线，所述电路板具有若干电路区域，每一电路区域包括一安装区域和一电连接区域，在所述电连接区域设置有若干第一金属部，每一所述显示面板设置于所述电路板且位于所述安装区域，所述显示面板包括设置于所述显示面板的显示面的金属连接垫，所述金属连接垫通过第一金属线与所述第一金属部电连接。通过第一金属线将显示面板上的金属连接垫与电连接电路板上的第一金属部电连接，减小拼接缝的缝隙。', 'CN202010797040.9', 1596988800, 'CN111951697B', 1643644800, 1605542400, NULL, 1643644800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 0, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 37, 0, 0, 0, 0, NULL, '916', NULL, '邱宁', NULL, 'CN103646613A | CN103907190A | CN103917071A | CN104464533A | CN105138195A | CN106252380A | CN106887525A | CN107402466A | CN108181752A | CN108417606A | CN108777114A | CN109448572A | CN109461403A | CN109768027A | CN109904186A | CN110021239A | CN110112171A | CN110164901A | CN110379314A | CN110379322A | CN110597038A | CN110707121A | CN110718570A | CN110727314A | CN110931540A | CN110942726A | CN111028682A | CN111028697A | CN111128051A | CN111208673A | CN111276058A | CN111292621A | CN111448539A | CN111463228A | US20160238785A1 | US20200168697A1', NULL, NULL, 1, '\\20220510\\cbd5777b51e9435f838c8505d32b29d9.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 41273, 41275, 41274, 3);
INSERT INTO `os_patent` VALUES (23901, '微发光二极管显示基板及其制作方法', '微发光二极管显示基板及其制作方法', 'CN111952331A', '本发明公开了一种微发光二极管显示基板及其制作方法。其包括一衬底基板；设在衬底基板顶面且相互连接的薄膜晶体管和微发光二极管，设在衬底基板的底面的第一金属膜层，并至少形成一扇出电路图案和一侧印焊盘；扇出电路图案与侧印焊盘连接，侧印焊盘通过侧面导线与薄膜晶体管连接。使得显示基板和边框组装后顶面显示像素区域可最大程度的靠近边框，以达到无边框效果。', '本发明公开了一种微发光二极管显示基板及其制作方法。其包括一衬底基板；设在衬底基板顶面且相互连接的薄膜晶体管和微发光二极管，设在衬底基板的底面的第一金属膜层，并至少形成一扇出电路图案和一侧印焊盘；扇出电路图案与侧印焊盘连接，侧印焊盘通过侧面导线与薄膜晶体管连接。使得显示基板和边框组装后顶面显示像素区域可最大程度的靠近边框，以达到无边框效果。', 'CN202010903445.6', 1598889600, 'CN111952331A', 1605542400, 1605542400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 26, 5, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 5, 3, 3, 3, 0, NULL, '916', NULL, NULL, NULL, 'CN110707120A | CN110910774A | CN111384067A | CN111584507A | WO2020130493A1', 'CN112599536A | CN112928192A | CN113161331A', NULL, 1, '\\20220510\\4da314d805aa452b843d693e880569cb.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41276, 41278, 41277, 2);
INSERT INTO `os_patent` VALUES (23902, '用于印刷锡膏的钢网，显示面板及其制备方法', '用于印刷锡膏的钢网，显示面板及其制备方法', 'CN111993768B', '本申请公开了一种用于印刷锡膏的钢网，显示面板及其制备方法，所述钢网包括：钢网主体，包括多个阵列排布的第一通孔；以及缓冲层，设于所述钢网主体的底面，包括与所述多个阵列排布的第一通孔一一对应的多个第二通孔。在使用该钢网进行锡膏印刷时，将所述缓冲层对向待印刷基板，一方面，通过钢网中通孔的辅助，实现精准的印刷，另一方面，当钢网下压基板后，所述缓冲层可起一定地缓冲作用，避免硬性的钢网与基板直接接触，导致基板短路、断路而造成良率损失的问题。', '本申请公开了一种用于印刷锡膏的钢网，显示面板及其制备方法，所述钢网包括：钢网主体，包括多个阵列排布的第一通孔；以及缓冲层，设于所述钢网主体的底面，包括与所述多个阵列排布的第一通孔一一对应的多个第二通孔。在使用该钢网进行锡膏印刷时，将所述缓冲层对向待印刷基板，一方面，通过钢网中通孔的辅助，实现精准的印刷，另一方面，当钢网下压基板后，所述缓冲层可起一定地缓冲作用，避免硬性的钢网与基板直接接触，导致基板短路、断路而造成良率损失的问题。', 'CN202010797303.6', 1596988800, 'CN111993768B', 1632412800, 1606406400, NULL, 1632412800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 17, 0, 0, 0, 0, NULL, '916', NULL, '仪晓娟', NULL, 'CN107627748A | CN108365081A | CN109109444A | CN109166826A | CN109362189A | CN110729201A | CN111063268A | CN111465216A | CN111511124A | CN1705089A | CN206596293U | CN208460706U | CN209964404U | CN210940916U | CN2919788Y | JP2002321337A | JP2010103352A', NULL, NULL, 1, '\\20220510\\2af13a94868f471b9c9d99fc86d2b308.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41279, 41281, 41280, 2);
INSERT INTO `os_patent` VALUES (23903, '背光模组和显示装置', '背光模组和显示装置', 'CN111999936B', '本申请提供一种背光模组和显示装置，背光模组包括拼接的多个背板，背板中设置有阵列排布的多个发光器件，发光器件与电源高电位信号输入端和电源低电位信号输入端电连接，用于在电源高电位信号和电源低电位信号的控制下发光，其中，发光器件包括位于相邻背板拼接区域的第一发光器件、以及位于背板其他区域的第二发光器件，至少一个背板中，第一发光器件与对应电源高电位信号输入端之间的第一电阻，小于第二发光器件与对应电源高电位信号输入端之间的第二电阻。本申请使得第一发光器件的亮度大于第二发光器件亮度，从而使得拼接区域中间距较大的第一发光器件的整体亮度与其他区域中间距较小的第二发光器件的整体亮度相等。', '本申请提供一种背光模组和显示装置，背光模组包括拼接的多个背板，背板中设置有阵列排布的多个发光器件，发光器件与电源高电位信号输入端和电源低电位信号输入端电连接，用于在电源高电位信号和电源低电位信号的控制下发光，其中，发光器件包括位于相邻背板拼接区域的第一发光器件、以及位于背板其他区域的第二发光器件，至少一个背板中，第一发光器件与对应电源高电位信号输入端之间的第一电阻，小于第二发光器件与对应电源高电位信号输入端之间的第二电阻。本申请使得第一发光器件的亮度大于第二发光器件亮度，从而使得拼接区域中间距较大的第一发光器件的整体亮度与其他区域中间距较小的第二发光器件的整体亮度相等。', 'CN202010878885.0', 1598457600, 'CN111999936B', 1619452800, 1606406400, NULL, 1619452800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 5, 0, 0, 0, 0, NULL, '916', NULL, '施素婷', NULL, 'CN103165084A | CN109637455A | CN110047436A | CN111429853A | CN206300089U', NULL, NULL, 1, '\\20220510\\cd88c073c1994c928ca369cf49f82b8d.png', NULL, NULL, 1, NULL, NULL, 15, NULL, NULL, NULL, 41282, 41284, 41283, 3);
INSERT INTO `os_patent` VALUES (23904, '显示装置', '显示装置', 'CN112002250A', '本申请提出了一种显示装置，该显示装置包括壳体组件及位于该壳体组件内的柔性显示屏与传动组件；当所述显示装置处于小屏状态时，所述柔性显示屏通过所述传动组件以任意角度弯折以及收纳于所述壳体组件内；当所述显示装置处于大屏状态时，所述柔性显示屏位于所述壳体组件外。本申请利用柔性材料形成柔性显示屏使得柔性显示屏能以任意角度弯折，以及通过壳体组件内的传动组件将柔性显示屏收纳，以实现显示装置的大屏显示及小屏显示，大大缩小了该柔性显示屏的体积，提高了产品的携带便捷性。', '本申请提出了一种显示装置，该显示装置包括壳体组件及位于该壳体组件内的柔性显示屏与传动组件；当所述显示装置处于小屏状态时，所述柔性显示屏通过所述传动组件以任意角度弯折以及收纳于所述壳体组件内；当所述显示装置处于大屏状态时，所述柔性显示屏位于所述壳体组件外。本申请利用柔性材料形成柔性显示屏使得柔性显示屏能以任意角度弯折，以及通过壳体组件内的传动组件将柔性显示屏收纳，以实现显示装置的大屏显示及小屏显示，大大缩小了该柔性显示屏的体积，提高了产品的携带便捷性。', 'CN202010782823.X', 1596643200, 'CN112002250A', 1606406400, 1606406400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 8, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN102468447A | CN103514814A | CN104538420A | CN109473560A | CN109585674A | CN109671756A | CN110047384A | US20190317559A1', NULL, NULL, 1, '\\20220510\\8aa2b953152e479d92a79ede4abf3ec6.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41285, 41287, 41286, 1);
INSERT INTO `os_patent` VALUES (23905, '显示装置', '显示装置', 'CN112014995A', '本申请公开了一种显示装置，包括一显示面板以及一背光灯板，所述显示面板与所述背光灯板之间设置有一控光层；其中，所述控光层包括一第一基板以及一聚合物液晶层，所述第一基板设置于所述控光层靠近所述背光灯板的一侧，所述聚合物液晶层设置于所述控光层远离所述背光灯板的一侧。背光灯板采用直下式三色结构，可以降低彩膜层的厚度，有效解决弯折时彩膜层光阻区偏位带来的色偏风险，并且结合聚合物液晶层实现了超薄厚度控光，可以实现柔性液晶显示。', '本申请公开了一种显示装置，包括一显示面板以及一背光灯板，所述显示面板与所述背光灯板之间设置有一控光层；其中，所述控光层包括一第一基板以及一聚合物液晶层，所述第一基板设置于所述控光层靠近所述背光灯板的一侧，所述聚合物液晶层设置于所述控光层远离所述背光灯板的一侧。背光灯板采用直下式三色结构，可以降低彩膜层的厚度，有效解决弯折时彩膜层光阻区偏位带来的色偏风险，并且结合聚合物液晶层实现了超薄厚度控光，可以实现柔性液晶显示。', 'CN202010966636.7', 1600099200, 'CN112014995A', 1606752000, 1606752000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 6, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN103620664A | CN104820315A | CN107544177A | CN108303824A | CN110750009A | CN209281113U', NULL, NULL, 1, '\\20220510\\a9f35e4d1ff44876b50d072f870e7a58.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41288, 41290, 41289, 1);
INSERT INTO `os_patent` VALUES (23906, '可弯折背光模组及显示面板', '可弯折背光模组及显示面板', 'CN112015006A', '本申请提出了一种可弯折背光模组，包括：第一非弯折部，包括第一背光单元，第一背光单元包括第一发光二极管灯；第二非弯折部，包括第二背光单元，第二背光单元包括第二发光二极管灯；可弯折部，可弯折部设于第一非弯折部和第二非弯折部之间，可弯折部包括第三背光单元，第三背光单元包括多个微型发光二极管和柔性基底，微型发光二极管设于柔性基底上。', '本申请提出了一种可弯折背光模组，包括：第一非弯折部，包括第一背光单元，第一背光单元包括第一发光二极管灯；第二非弯折部，包括第二背光单元，第二背光单元包括第二发光二极管灯；可弯折部，可弯折部设于第一非弯折部和第二非弯折部之间，可弯折部包括第三背光单元，第三背光单元包括多个微型发光二极管和柔性基底，微型发光二极管设于柔性基底上。', 'CN202010958507.3', 1600012800, 'CN112015006A', 1606752000, 1606752000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 8, 2, 2, 2, 0, NULL, '916', NULL, NULL, NULL, 'CN104864311A | CN106908865A | CN107958921A | CN109509401A | CN202253209U | US20070153548A1 | US20090086508A1 | US20190113783A1', 'CN113050327A | CN113138495A', NULL, 1, '\\20220510\\2900fe05148543509fd8934d6e5433e3.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41291, 41293, 41292, 1);
INSERT INTO `os_patent` VALUES (23907, 'mini LED背光模组的驱动方法', 'mini LED背光模组的驱动方法', 'CN112017602B', '本申请公开了一种mini LED背光模组的驱动方法，通过将mini LED背光模组沿数据线延伸的方向划分为多个分区，并在mini LED背光模组每一帧的周期中划分出调节子场，根据不同灰阶模式的情况，调节不同分区对应的调节子场中亮子场或暗子场的大小，使得各分区显示的亮度在一设定的亮度阈值范围内，从而实现所述mini LED背光模组显示亮度的均匀化。', '本申请公开了一种mini LED背光模组的驱动方法，通过将mini LED背光模组沿数据线延伸的方向划分为多个分区，并在mini LED背光模组每一帧的周期中划分出调节子场，根据不同灰阶模式的情况，调节不同分区对应的调节子场中亮子场或暗子场的大小，使得各分区显示的亮度在一设定的亮度阈值范围内，从而实现所述mini LED背光模组显示亮度的均匀化。', 'CN202010909073.8', 1598976000, 'CN112017602B', 1622476800, 1606752000, NULL, 1622476800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 16, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, '刘苗', NULL, NULL, NULL, NULL, 1, '\\20220510\\d7826213bd9e48da9225c15ece4a3fdd.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41294, 41296, 41295, 3);
INSERT INTO `os_patent` VALUES (23908, '触控显示面板及其制备方法', '触控显示面板及其制备方法', 'CN112035007A', '本发明提供一种触控显示面板及其制备方法，所述触控显示面板包括：基板、多个第一电极、多个第二电极、第一绝缘层、连接层、LED、薄膜晶体管以及保护层。本发明通过主动发光的形式将Mini LED、Micro LED结合触控的新型触控显示面板。本发明将薄膜晶体管与触控电极在基板上进行排布，可以使MicroLED或Mini LED实现三色的显示。本发明在制备的时候，显示区的触控电极结构与非显示区的薄膜晶体管结构一同制备，可以提高制备的效率。', '本发明提供一种触控显示面板及其制备方法，所述触控显示面板包括：基板、多个第一电极、多个第二电极、第一绝缘层、连接层、LED、薄膜晶体管以及保护层。本发明通过主动发光的形式将Mini LED、Micro LED结合触控的新型触控显示面板。本发明将薄膜晶体管与触控电极在基板上进行排布，可以使MicroLED或Mini LED实现三色的显示。本发明在制备的时候，显示区的触控电极结构与非显示区的薄膜晶体管结构一同制备，可以提高制备的效率。', 'CN202010801404.6', 1597075200, 'CN112035007A', 1607011200, 1607011200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 3, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 15, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 6, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN108986678A | CN110214378A | CN111048685A | CN111413819A | CN111430439A | CN1744775A', NULL, NULL, 1, '\\20220510\\e04362d2c5ae49f1a82127d4a586b18d.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41297, 41299, 41298, 3);
INSERT INTO `os_patent` VALUES (23909, '背光模组和显示装置', '背光模组和显示装置', 'CN112068351A', '本申请提供一种背光模组和显示装置，背光模组包括拼接的多个背板，背板中设置有阵列排布的多个发光器件，发光器件用于在电源高电位信号和电源低电位信号的控制下发光，其中，发光器件包括位于相邻背板拼接区域的第一发光器件、以及位于背板其他区域的第二发光器件，至少一个背板中，第一发光器件对应的第一电源高电位信号大于第二发光器件对应的第二电源高电位信号。本申请通过将第一电源高电位信号设置为大于第二电源高电位信号，则在拼接区域电源高电位信号和电源低电位信号的差值更大，对应的第一发光器件的亮度大于第二发光器件亮度，从而使得拼接区域的整体亮度与其他区域的整体亮度相等。', '本申请提供一种背光模组和显示装置，背光模组包括拼接的多个背板，背板中设置有阵列排布的多个发光器件，发光器件用于在电源高电位信号和电源低电位信号的控制下发光，其中，发光器件包括位于相邻背板拼接区域的第一发光器件、以及位于背板其他区域的第二发光器件，至少一个背板中，第一发光器件对应的第一电源高电位信号大于第二发光器件对应的第二电源高电位信号。本申请通过将第一电源高电位信号设置为大于第二电源高电位信号，则在拼接区域电源高电位信号和电源低电位信号的差值更大，对应的第一发光器件的亮度大于第二发光器件亮度，从而使得拼接区域的整体亮度与其他区域的整体亮度相等。', 'CN202010905373.9', 1598889600, 'CN112068351A', 1607616000, 1607616000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 12, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 11, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN101079233A | CN104465715A | CN104778920A | CN107742511A | CN110061116A | CN110073432A | CN110580874A | CN110853592A | CN111999936A | US20180144691A1 | US5056893A', NULL, NULL, 1, '\\20220510\\a2943a24883b4e819495102468bf5223.png', NULL, NULL, 1, NULL, NULL, 15, NULL, NULL, NULL, 41300, 41302, 41301, 2);
INSERT INTO `os_patent` VALUES (23910, '一种显示装置', '一种显示装置', 'CN112071217A', '本申请提供一种显示装置，包括显示模组和散热模组，显示模组位于散热模组的一侧或两侧；散热模组包括平行于显示模组设置的第一散热板和第二散热板，第一散热板和第二散热板组合后形成两端开口的空腔；散热模组的一侧侧面具有进风口，相对另一侧侧面具有出风口，空腔形成散热风道。本申请通过在显示模组的一侧设置具有烟囱效应的散热模组，能够解决传统Mini‑LED或Micro‑LED显示器散热不佳，影响显示器性能的问题。', '本申请提供一种显示装置，包括显示模组和散热模组，显示模组位于散热模组的一侧或两侧；散热模组包括平行于显示模组设置的第一散热板和第二散热板，第一散热板和第二散热板组合后形成两端开口的空腔；散热模组的一侧侧面具有进风口，相对另一侧侧面具有出风口，空腔形成散热风道。本申请通过在显示模组的一侧设置具有烟囱效应的散热模组，能够解决传统Mini‑LED或Micro‑LED显示器散热不佳，影响显示器性能的问题。', 'CN202010909463.5', 1598976000, 'CN112071217A', 1607616000, 1607616000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 7, 1, 1, 1, 0, NULL, '916', NULL, NULL, NULL, 'CN105405364A | CN105427756A | CN105588229A | CN107615479A | CN110850619A | CN207264708U | CN208706208U', 'CN112967618A', NULL, 1, '\\20220510\\ee966e2ebf0842c6ba2a22427f963f0c.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41303, 41305, 41304, 2);
INSERT INTO `os_patent` VALUES (23911, 'Micro-LED芯片的转移方法', 'Micro-LED芯片的转移方法', 'CN112071795A', '本发明提供一种Micro‑LED芯片的转移方法，所述Micro‑LED芯片的转移方法包括以下步骤：提供第一基板，所述第一基板上设有多个第一电极；提供第二基板，所述第二基板上设有多个第一Micro‑LED芯片，多个所述第一Micro‑LED芯片与多个所述第一电极对应设置；将多个所述第一Micro‑LED芯片与多个所述第一电极进行键合；去除所述第二基板。本发明的Micro‑LED芯片的转移方法，提高了第一Micro‑LED芯片的转移效率和转移精度，从而提高了最终制造得到的Micro‑LED显示器的生产周期和良率，节省了Micro‑LED显示器的制造成本，使其适于量产。', '本发明提供一种Micro‑LED芯片的转移方法，所述Micro‑LED芯片的转移方法包括以下步骤：提供第一基板，所述第一基板上设有多个第一电极；提供第二基板，所述第二基板上设有多个第一Micro‑LED芯片，多个所述第一Micro‑LED芯片与多个所述第一电极对应设置；将多个所述第一Micro‑LED芯片与多个所述第一电极进行键合；去除所述第二基板。本发明的Micro‑LED芯片的转移方法，提高了第一Micro‑LED芯片的转移效率和转移精度，从而提高了最终制造得到的Micro‑LED显示器的生产周期和良率，节省了Micro‑LED显示器的制造成本，使其适于量产。', 'CN202010947974.6', 1599667200, 'CN112071795A', 1607616000, 1607616000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 5, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN108538971A | CN109802018A | CN110610931A | CN110767582A | US20200203319A1', NULL, NULL, 1, '\\20220510\\855d6d940251424cb84353c9c5fad4c1.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41306, 41308, 41307, 1);
INSERT INTO `os_patent` VALUES (23912, '基板和基板的制备方法', '基板和基板的制备方法', 'CN112071830B', '本申请提供一种基板及其制备方法，该制备方法包括：提供衬底；在衬底一侧制备发光器件绑定端子和驱动发光器件发光的像素驱动电路，发光器件绑定端子位于基板的发光器件绑定区内，像素驱动电路位于基板的驱动电路区内；在发光器件绑定端子远离衬底的一侧形成防刮层，防刮层覆盖像素驱动电路，在防刮层中图案化形成暴露发光器件绑定端子的第一过孔；通过丝网印刷法在第一过孔内填充焊膏；剥离防刮层，将发光器件通过焊膏与发光器件绑定端子绑定。本申请在填充焊膏之前先形成一层防刮层，使得丝网印刷时形成像素驱动电路的各信号线不会被压伤，在填充焊膏后，将防刮层剥离，实现了在不影响基板性能的同时防止基板上线路被压伤。', '本申请提供一种基板及其制备方法，该制备方法包括：提供衬底；在衬底一侧制备发光器件绑定端子和驱动发光器件发光的像素驱动电路，发光器件绑定端子位于基板的发光器件绑定区内，像素驱动电路位于基板的驱动电路区内；在发光器件绑定端子远离衬底的一侧形成防刮层，防刮层覆盖像素驱动电路，在防刮层中图案化形成暴露发光器件绑定端子的第一过孔；通过丝网印刷法在第一过孔内填充焊膏；剥离防刮层，将发光器件通过焊膏与发光器件绑定端子绑定。本申请在填充焊膏之前先形成一层防刮层，使得丝网印刷时形成像素驱动电路的各信号线不会被压伤，在填充焊膏后，将防刮层剥离，实现了在不影响基板性能的同时防止基板上线路被压伤。', 'CN202010945145.4', 1599667200, 'CN112071830B', 1630598400, 1607616000, NULL, 1630598400, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 16, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 8, 0, 0, 0, 0, NULL, '916', NULL, '程健', NULL, 'CN104078550A | CN109103166A | CN110767795A | CN111128942A | CN111354774A | CN111554783A | CN111564453A | US20190302917A1', NULL, NULL, 1, '\\20220510\\65fa343f5f7840039ff0af7e9f00fb37.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 41309, 41311, 41310, 3);
INSERT INTO `os_patent` VALUES (23913, '显示面板', '显示面板', 'CN112086037A', '本发明提供一种显示面板，包括：玻璃基板、薄膜晶体管电路层、挡光层、发光单元、封装层、绑定端子以及PCB板，其采用玻璃基板为底层板材，通过在玻璃基板上设置薄膜晶体管电路层，并在薄膜晶体管电路层上焊接Mini LED或Micro LED发光单元。本发明的像素驱动电路采用有源矩阵主动驱动以及外补驱动架构。最后通过覆晶薄膜连接玻璃基板背面的PCB板。', '本发明提供一种显示面板，包括：玻璃基板、薄膜晶体管电路层、挡光层、发光单元、封装层、绑定端子以及PCB板，其采用玻璃基板为底层板材，通过在玻璃基板上设置薄膜晶体管电路层，并在薄膜晶体管电路层上焊接Mini LED或Micro LED发光单元。本发明的像素驱动电路采用有源矩阵主动驱动以及外补驱动架构。最后通过覆晶薄膜连接玻璃基板背面的PCB板。', 'CN202011022602.9', 1600963200, 'CN112086037A', 1607961600, 1607961600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 8, 3, 3, 3, 0, NULL, '916', NULL, NULL, NULL, 'CN108877685A | CN110323231A | CN110379322A | CN110853572A | CN110880497A | CN111048040A | CN111081158A | CN206819717U', 'CN112634826A | CN112634826B | CN112767852A', NULL, 1, '\\20220510\\058f2cf7a96547cd82e4bcf1a8660b8c.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41312, 41314, 41313, 1);
INSERT INTO `os_patent` VALUES (23914, '曲面显示面板', '曲面显示面板', 'CN112086570A', '本申请提供一种曲面显示面板，本申请中的曲面显示面板包括曲面盖板、设于曲面盖板内侧的柔性衬底以及设于柔性衬底上柔性显示面板；其中，曲面盖板包括至少一侧的弯折部，弯折部向曲面盖板内弯曲，柔性衬底对应弯折部设置有曲面段，曲面段设置有镂空图案，曲面显示面板长期处于弯折状态，所承受的应力使的柔性衬底、柔性显示面板中膜层在弯折位置发生应变，相互挤压，填充镂空图案中，使其相互粘合在一起，起到缓解、传递和消除应力的作用，可降低曲面显示面板中弯折膜层应力集中和不均匀问题，且弯折位置中各膜层嵌设于镂空图案中，提高相邻膜层的粘附力，从而提升大曲率、大角度曲面屏显示品质。', '本申请提供一种曲面显示面板，本申请中的曲面显示面板包括曲面盖板、设于曲面盖板内侧的柔性衬底以及设于柔性衬底上柔性显示面板；其中，曲面盖板包括至少一侧的弯折部，弯折部向曲面盖板内弯曲，柔性衬底对应弯折部设置有曲面段，曲面段设置有镂空图案，曲面显示面板长期处于弯折状态，所承受的应力使的柔性衬底、柔性显示面板中膜层在弯折位置发生应变，相互挤压，填充镂空图案中，使其相互粘合在一起，起到缓解、传递和消除应力的作用，可降低曲面显示面板中弯折膜层应力集中和不均匀问题，且弯折位置中各膜层嵌设于镂空图案中，提高相邻膜层的粘附力，从而提升大曲率、大角度曲面屏显示品质。', 'CN202010934094.5', 1599494400, 'CN112086570A', 1607961600, 1607961600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 4, 4, 4, 4, 0, NULL, '916', NULL, NULL, NULL, 'CN103955306A | CN108693998A | CN110300998A | CN205845416U', 'CN112786621A | CN113134525A | CN113516918A | CN113516918B', NULL, 1, '\\20220510\\00580fae030d4f649a9992fcfd707e49.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41315, 41317, 41316, 1);
INSERT INTO `os_patent` VALUES (23915, '一种电子设备', '一种电子设备', 'CN112102739A', '本发明提供一种电子设备，所述电子设备为显示设备，所述显示设备具有显示区和围绕所述显示区的非显示区；所述显示设备还包括基板，在所述显示区，多个声表面波器件排布于所述基板上。本发明在显示面板中设置声表面波器件，一方面可以实现无线传感的目标，以增加电子设备的附加值；另一方面，有利于解决电子设备排布空间不足的问题，取得良好的经济效益。', '本发明提供一种电子设备，所述电子设备为显示设备，所述显示设备具有显示区和围绕所述显示区的非显示区；所述显示设备还包括基板，在所述显示区，多个声表面波器件排布于所述基板上。本发明在显示面板中设置声表面波器件，一方面可以实现无线传感的目标，以增加电子设备的附加值；另一方面，有利于解决电子设备排布空间不足的问题，取得良好的经济效益。', 'CN202010975326.1', 1600185600, 'CN112102739A', 1608220800, 1608220800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 16, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 10, 1, 1, 1, 0, NULL, '916', NULL, NULL, NULL, 'CN105892127A | CN106653695A | CN108052930A | CN109584777A | CN109726702A | CN110444567A | CN110718577A | CN110910766A | JP2006343919A | US8766953B1', 'TWI759173B', NULL, 1, '\\20220510\\b9b86101d3a7465697553ec055497d67.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41318, 41320, 41319, 1);
INSERT INTO `os_patent` VALUES (23916, '显示装置及电子设备', '显示装置及电子设备', 'CN112102783B', '本申请提供一种显示装置及电子设备，显示装置具有主显示区、过渡显示区以及显示透光区，过渡显示区位于主显示区和显示透光区之间，显示装置包括：多个第一显示像素，设置于主显示区；多个第二显示像素，设置于过渡显示区和显示透光区；多个第一像素驱动电路，阵列地设置于主显示区，且用于驱动多个第一显示像素；多个第二像素驱动电路，设置于过渡显示区，且用于驱动多个第二显示像素；以及金属反射部，设置于过渡显示区，且金属反射部至少位于多个第二像素驱动电路之间的间隙。', '本申请提供一种显示装置及电子设备，显示装置具有主显示区、过渡显示区以及显示透光区，过渡显示区位于主显示区和显示透光区之间，显示装置包括：多个第一显示像素，设置于主显示区；多个第二显示像素，设置于过渡显示区和显示透光区；多个第一像素驱动电路，阵列地设置于主显示区，且用于驱动多个第一显示像素；多个第二像素驱动电路，设置于过渡显示区，且用于驱动多个第二显示像素；以及金属反射部，设置于过渡显示区，且金属反射部至少位于多个第二像素驱动电路之间的间隙。', 'CN202011225327.0', 1604505600, 'CN112102783B', 1612195200, 1608220800, NULL, 1612195200, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 27, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 9, 0, 0, 0, 0, NULL, '916', NULL, '孟慧慧', NULL, 'CN107656397A | CN110783384A | CN110783385A | CN111048559A | CN111146362A | CN111341820A | CN111640776A | CN111739917A | US20150055066A1', NULL, NULL, 1, '\\20220510\\39952967d53e48898e63bd33bac75900.png', NULL, NULL, 1, NULL, NULL, 15, NULL, NULL, NULL, 41321, 41323, 41322, 2);
INSERT INTO `os_patent` VALUES (23917, '一种背光模组及其制备方法与显示装置', '一种背光模组及其制备方法与显示装置', 'CN112198711A', '本申请公开了一种背光模组及其制备方法与显示装置，所述背光模组包括：一微型发光二极管灯板、一光学膜片组以及一第一挡墙，其中，所述光学膜片组层叠设置于所述微型发光二极管灯板的一面上，所述第一挡墙设置于所述光学膜片组和所述微型发光二极管灯板中至少一者的周围，所述微型发光二极管灯板和所述第一挡墙为一体化结构。相较于现有Mini‑LED背光模组的结构，具有整体厚度薄、边框窄、组装便捷等优点。', '本申请公开了一种背光模组及其制备方法与显示装置，所述背光模组包括：一微型发光二极管灯板、一光学膜片组以及一第一挡墙，其中，所述光学膜片组层叠设置于所述微型发光二极管灯板的一面上，所述第一挡墙设置于所述光学膜片组和所述微型发光二极管灯板中至少一者的周围，所述微型发光二极管灯板和所述第一挡墙为一体化结构。相较于现有Mini‑LED背光模组的结构，具有整体厚度薄、边框窄、组装便捷等优点。', 'CN202011108923.0', 1602777600, 'CN112198711A', 1610035200, 1610035200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 3, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 8, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN106842696A | CN107390428A | CN108008577A | CN110196514A | CN110596951A | CN111443524A | CN208026907U | KR1020130034152A', NULL, NULL, 1, '\\20220510\\b3a2e62bf7c94a70bf7b47e04509f9c7.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41324, 41326, 41325, 2);
INSERT INTO `os_patent` VALUES (23918, '液晶显示屏、液晶显示装置', '液晶显示屏、液晶显示装置', 'CN112198716A', '本发明提供一种液晶显示屏及液晶显示装置。液晶显示屏包括显示面板、背光模组、及指纹识别模组。所述背光模组设置于所述显示面板的相对下方。所述指纹识别模组设置于所述背光模组的下方。其中所述背光模组包括背板和LED灯板。所述背板形成有容纳腔。所述LED灯板设置于所述容纳腔底部。所述LED灯板上设置有多个第一mini LED芯片和多个第二mini LED芯片，所述第一mini LED芯片用于给所述显示面板提供背光，所述第二mini LED芯片用于给所述指纹识别模组提供光源。把指纹识别模组的光源设置为直下式，以提高液晶显示屏的屏占比，实现全面屏。', '本发明提供一种液晶显示屏及液晶显示装置。液晶显示屏包括显示面板、背光模组、及指纹识别模组。所述背光模组设置于所述显示面板的相对下方。所述指纹识别模组设置于所述背光模组的下方。其中所述背光模组包括背板和LED灯板。所述背板形成有容纳腔。所述LED灯板设置于所述容纳腔底部。所述LED灯板上设置有多个第一mini LED芯片和多个第二mini LED芯片，所述第一mini LED芯片用于给所述显示面板提供背光，所述第二mini LED芯片用于给所述指纹识别模组提供光源。把指纹识别模组的光源设置为直下式，以提高液晶显示屏的屏占比，实现全面屏。', 'CN202011157065.9', 1603641600, 'CN112198716A', 1610035200, 1610035200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 5, 0, 0, 0, 1, NULL, '916', NULL, NULL, NULL, 'CN110456559A | CN110458131A | CN110796070A | CN111368583A | US20100322550A1', NULL, '高鸿锦等: \"《新型显示技术 下》\", 31 August 2014, 北京邮电大学出版社', 1, '\\20220510\\925e2161b4874f9bb886634d078b30a1.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41327, 41329, 41328, 1);
INSERT INTO `os_patent` VALUES (23919, '一种显示面板及显示装置', '一种显示面板及显示装置', 'CN112214137A', '本申请实施例提供一种显示面板及显示装置，该显示面板包括：基板、自电容触控传感模块、光控传感模块和盖板。其中，自电容触控传感模块包括多个第一方向电极和多个第二方向电极，第一方向电极沿第一方向延伸，第二方向电极沿第二方向延伸，第一方向与第二方向相交。光控传感模块与自电容触控传感模块相邻设置。本申请采用自电容触控传感模块和光控传感模块集成于显示屏之中，相较于互电容触控传感模块，可实现更高的扫描频率和较高的抗噪性能，有利于将触控和光控传感器集成在大尺寸的显示屏之中。并且可以有效的解决互电容触控传感器与光控传感器集成的信号串扰的问题。', '本申请实施例提供一种显示面板及显示装置，该显示面板包括：基板、自电容触控传感模块、光控传感模块和盖板。其中，自电容触控传感模块包括多个第一方向电极和多个第二方向电极，第一方向电极沿第一方向延伸，第二方向电极沿第二方向延伸，第一方向与第二方向相交。光控传感模块与自电容触控传感模块相邻设置。本申请采用自电容触控传感模块和光控传感模块集成于显示屏之中，相较于互电容触控传感模块，可实现更高的扫描频率和较高的抗噪性能，有利于将触控和光控传感器集成在大尺寸的显示屏之中。并且可以有效的解决互电容触控传感器与光控传感器集成的信号串扰的问题。', 'CN202011109291.X', 1602777600, 'CN112214137A', 1610380800, 1610380800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 12, 4, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 3, 3, 3, 0, NULL, '916', NULL, NULL, NULL, NULL, 'CN112799548A | CN112882602A | CN113157134A', NULL, 1, '\\20220510\\01c38b8473de49aba79039d76879005b.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41330, 41332, 41331, 1);
INSERT INTO `os_patent` VALUES (23920, '显示装置及其控制方法', '显示装置及其控制方法', 'CN112233623A', '本公开公开了一种显示装置及其控制方法，显示装置包括显示面板、背光单元以及时序控制器；显示面板用于画面显示；通过抖动值的比较结果，确定动态画面的残影发生区域，配置无发光亮度的背光数据至与残影发生区域相对应的第二背光子区，可以改善动态画面的拖尾现象，同时由于未采用倍频技术，不会增加显示的不稳定性风险。', '本公开公开了一种显示装置及其控制方法，显示装置包括显示面板、背光单元以及时序控制器；显示面板用于画面显示；通过抖动值的比较结果，确定动态画面的残影发生区域，配置无发光亮度的背光数据至与残影发生区域相对应的第二背光子区，可以改善动态画面的拖尾现象，同时由于未采用倍频技术，不会增加显示的不稳定性风险。', 'CN202011091112.4', 1602518400, 'CN112233623A', 1610640000, 1610640000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 2, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 6, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 9, 1, 1, 1, 1, NULL, '916', NULL, NULL, NULL, 'CN101369407A | CN101370339A | CN101609658A | CN101673521A | CN102279482A | CN103489420A | CN106205497A | CN109949751A | US20130342434A1', 'CN114241958A', '顾学海: \"基于DSP642的电子稳像技术\", 《中国优秀硕士学位论文全文数据库》', 1, '\\20220510\\56a6ef69bde54577917ff79f12626446.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41333, 41335, 41334, 2);
INSERT INTO `os_patent` VALUES (23921, '一种微型发光二极管灯板、背光模组及其制备方法', '一种微型发光二极管灯板、背光模组及其制备方法', 'CN112241088B', '本申请公开了一种微型发光二极管灯板、背光模组及其制备方法，所述微型发光二极管灯板主要包括：依次层叠设置的一基板、一第一反射层、一电路层以及多个微型发光二极管，其中，所述多个微型发光二极管间隔设置于所述电路层上，所述微型发光二极管灯板可以作为背光模组的背光源，具有提高光线利用率、节约能耗的优点。', '本申请公开了一种微型发光二极管灯板、背光模组及其制备方法，所述微型发光二极管灯板主要包括：依次层叠设置的一基板、一第一反射层、一电路层以及多个微型发光二极管，其中，所述多个微型发光二极管间隔设置于所述电路层上，所述微型发光二极管灯板可以作为背光模组的背光源，具有提高光线利用率、节约能耗的优点。', 'CN202011103751.8', 1602691200, 'CN112241088B', 1630598400, 1610985600, NULL, 1630598400, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 3, 3, NULL, NULL, 5, 0, 0, 0, 0, NULL, '916', NULL, '刘鑫', NULL, 'CN210954546U | CN210982988U | CN210982989U | EP1312972A1 | US20100141868A1', NULL, NULL, 1, '\\20220510\\72fbe243a7ec4c1db529ffb4a7908dcc.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 41336, 41338, 41337, 3);
INSERT INTO `os_patent` VALUES (23922, 'LED显示背板检测装置及其检测方法', 'LED显示背板检测装置及其检测方法', 'CN112309884A', '本发明公开了一种LED显示背板检测装置，包括：载台，导电线路电路板，LED绑定面，所述导电线路电路板包含多个所述LED绑定面，每个所述LED绑定面均与所述导电线路电路板内的导电线路相连接；每个所述LED绑定面与所述待检测背板上的所述LED发光元件一一对应连接；信号控制器，所述信号控制器给所述导电线路电路板提供电压。所述导电线路电路板给所述待检测背板上的各个所述LED发光元件传输电压并点亮各个所述LED发光元件，根据各个所述LED发光元件的亮暗程度来判定所述待检测背板相对应位置的品质。', '本发明公开了一种LED显示背板检测装置，包括：载台，导电线路电路板，LED绑定面，所述导电线路电路板包含多个所述LED绑定面，每个所述LED绑定面均与所述导电线路电路板内的导电线路相连接；每个所述LED绑定面与所述待检测背板上的所述LED发光元件一一对应连接；信号控制器，所述信号控制器给所述导电线路电路板提供电压。所述导电线路电路板给所述待检测背板上的各个所述LED发光元件传输电压并点亮各个所述LED发光元件，根据各个所述LED发光元件的亮暗程度来判定所述待检测背板相对应位置的品质。', 'CN202011144074.4', 1603382400, 'CN112309884A', 1612195200, 1612195200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\d5bb6f303057438a9f37bd5628023ec7.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41339, 41341, 41340, 1);
INSERT INTO `os_patent` VALUES (23923, '显示面板及制备方法', '显示面板及制备方法', 'CN112310119A', '一种显示面板，包括衬底基板、发光部、存储电容部、薄膜晶体管阵列部、扇出电路以及驱动芯片；其中，所述衬底基板具有第一表面和与所述第一表面相对的第二表面；所述发光部、所述存储电容部以及所述薄膜晶体管阵列部均设置于所述衬底基板的第一表面侧；所述扇出电路设置于所述衬底基板的第二表面，所述扇出电路通过位于所述阵列基板上的电连接部与位于所述薄膜晶体管阵列部侧边缘的第一金属信号线电连接；所述驱动芯片设置于所述衬底基板的第二表面侧，电连接于所述扇出电路；公共电极层、像素电极层、遮光金属层以及源漏极金属层同层设置于所述衬底基板的第一表面，所述发光部绑定于所述公共电极层以及所述像素电极层上。', '一种显示面板，包括衬底基板、发光部、存储电容部、薄膜晶体管阵列部、扇出电路以及驱动芯片；其中，所述衬底基板具有第一表面和与所述第一表面相对的第二表面；所述发光部、所述存储电容部以及所述薄膜晶体管阵列部均设置于所述衬底基板的第一表面侧；所述扇出电路设置于所述衬底基板的第二表面，所述扇出电路通过位于所述阵列基板上的电连接部与位于所述薄膜晶体管阵列部侧边缘的第一金属信号线电连接；所述驱动芯片设置于所述衬底基板的第二表面侧，电连接于所述扇出电路；公共电极层、像素电极层、遮光金属层以及源漏极金属层同层设置于所述衬底基板的第一表面，所述发光部绑定于所述公共电极层以及所述像素电极层上。', 'CN202011109821.0', 1602777600, 'CN112310119A', 1612195200, 1612195200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 17, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\2d5ed2be5ada46008c76ae5c087adae5.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41342, 41344, 41343, 1);
INSERT INTO `os_patent` VALUES (23924, 'LED背板的像素结构、LED显示面板及其制作方法', 'LED背板的像素结构、LED显示面板及其制作方法', 'CN112310140A', '本发明公开了一种LED背板的像素结构、LED显示面板及其制作方法，包含多个子像素结构，所述子像素结构按照阵列式结构排列，所述LED背板的像素结构至少包含N行M列个所述子像素结构；每个所述子像素结构包括扫描线、数据线、第一电源端、第二电源端、IC驱动芯片以及发光元件；在每个所述子像素结构中，由所述IC驱动芯片来驱动控制所述发光元件。', '本发明公开了一种LED背板的像素结构、LED显示面板及其制作方法，包含多个子像素结构，所述子像素结构按照阵列式结构排列，所述LED背板的像素结构至少包含N行M列个所述子像素结构；每个所述子像素结构包括扫描线、数据线、第一电源端、第二电源端、IC驱动芯片以及发光元件；在每个所述子像素结构中，由所述IC驱动芯片来驱动控制所述发光元件。', 'CN202011141650.X', 1603296000, 'CN112310140A', 1612195200, 1612195200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 5, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\2ed5d45878904ebd8ed50bcf47672385.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41345, 41347, 41346, 1);
INSERT INTO `os_patent` VALUES (23925, 'micro LED显示面板及其制作方法', 'micro LED显示面板及其制作方法', 'CN112310141A', '本发明公开了一种microLED显示面板及其制作方法，包括microLED背板以及设置在所述microLED背板上的microLED芯片；所述microLED背板至少包括第一金属层、第二金属层以及第三金属层；其中，所述第一金属层包括栅极电极层；所述第二金属层包括源漏极，数据线和外围走线；所述第二金属层包括第一子金属层一和第二子金属层；所述第三金属层设置在所述第二子金属层的上方；所述第三金属层的上层为金属铜，所述第三金属层的下层为金属铝/金属钼/金属钛或其金属合金，所述microLED芯片设置在所述第三金属层的上方。', '本发明公开了一种microLED显示面板及其制作方法，包括microLED背板以及设置在所述microLED背板上的microLED芯片；所述microLED背板至少包括第一金属层、第二金属层以及第三金属层；其中，所述第一金属层包括栅极电极层；所述第二金属层包括源漏极，数据线和外围走线；所述第二金属层包括第一子金属层一和第二子金属层；所述第三金属层设置在所述第二子金属层的上方；所述第三金属层的上层为金属铜，所述第三金属层的下层为金属铝/金属钼/金属钛或其金属合金，所述microLED芯片设置在所述第三金属层的上方。', 'CN202011145534.5', 1603382400, 'CN112310141A', 1612195200, 1612195200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\e745860167af4251a5a26bc08db4510b.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41348, 41350, 41349, 1);
INSERT INTO `os_patent` VALUES (23926, 'Micro LED晶粒、Micro LED基板及其制备方法', 'Micro LED晶粒、Micro LED基板及其制备方法', 'CN112310252A', '本申请公开了一种Micro LED晶粒、Micro LED基板及其制备方法。所述Micro LED晶粒包括依次设置在第一基板上的一激光释放层、一弱化结构层以及一磊晶层；其中，所述弱化结构层包括靠近磊晶层一侧的空洞以及结构层。所述Micro LED基板包括多个设置在第一基板上的Micro LED晶粒，这种既具有弱化结构也具有激光释放层的Micro LED基板，具有选择性激光剥离功能，可以实现一步转移以及绑定后的巨量修补技术，且激光剥离后的Micro LED晶粒无需对基板进行盐酸清洗，减少了制程工艺以及对原材料的使用。由于修复时所使用的Micro LED基板与一步转移时的Micro LED基板相同，从而规避不必要的良率损失。', '本申请公开了一种Micro LED晶粒、Micro LED基板及其制备方法。所述Micro LED晶粒包括依次设置在第一基板上的一激光释放层、一弱化结构层以及一磊晶层；其中，所述弱化结构层包括靠近磊晶层一侧的空洞以及结构层。所述Micro LED基板包括多个设置在第一基板上的Micro LED晶粒，这种既具有弱化结构也具有激光释放层的Micro LED基板，具有选择性激光剥离功能，可以实现一步转移以及绑定后的巨量修补技术，且激光剥离后的Micro LED晶粒无需对基板进行盐酸清洗，减少了制程工艺以及对原材料的使用。由于修复时所使用的Micro LED基板与一步转移时的Micro LED基板相同，从而规避不必要的良率损失。', 'CN202011108458.0', 1602777600, 'CN112310252A', 1612195200, 1612195200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 3, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 14, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN101794848A | CN102683531A | CN103378250A | CN107369746A | CN107924866A | CN109802019A | CN109906518A | CN110858617A | CN111048634A | CN207217575U | JP2003188412A | JP2004363532A | TW201528541A | WO2017099905A1', NULL, NULL, 1, '\\20220510\\2c14fb9059d04bdeb60b10bedde86c9d.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41351, 41353, 41352, 2);
INSERT INTO `os_patent` VALUES (23927, '显示面板、显示模组及拼接屏', '显示面板、显示模组及拼接屏', 'CN112331090A', '本发明公开了一种显示面板、显示模组及拼接屏。该显示面板包括一基板；显示区，形成于基板的顶面，且设有Mini‑LED阵列，Mini‑LED阵列由多个Mini‑LED芯片呈阵列排布而成；及绑定区，形成于基板的顶面，且位于显示区的一侧，且靠近基板的其中一条水平边；每一Mini‑LED芯片呈长方形，且具有两条长边和两条短边，长边与基板顶面的水平边平行，短边与基板顶面的竖直边平行。本发明能够实现横向无缝拼接。', '本发明公开了一种显示面板、显示模组及拼接屏。该显示面板包括一基板；显示区，形成于基板的顶面，且设有Mini‑LED阵列，Mini‑LED阵列由多个Mini‑LED芯片呈阵列排布而成；及绑定区，形成于基板的顶面，且位于显示区的一侧，且靠近基板的其中一条水平边；每一Mini‑LED芯片呈长方形，且具有两条长边和两条短边，长边与基板顶面的水平边平行，短边与基板顶面的竖直边平行。本发明能够实现横向无缝拼接。', 'CN202011222600.4', 1604505600, 'CN112331090A', 1612454400, 1612454400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 16, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 2, 2, 2, 2, 0, NULL, '916', NULL, NULL, NULL, 'CN109188801A | CN111445806A', 'CN113112925A | CN113112925B', NULL, 1, '\\20220510\\573316784c024e3abed0cfac2c514d8e.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41354, 41356, 41355, 1);
INSERT INTO `os_patent` VALUES (23928, '发光基板及显示装置', '发光基板及显示装置', 'CN112331151A', '本申请提供一种发光基板及显示装置，通过在从靠近数据信号输入端指向远离数据信号输入端的方向上，多个驱动电路的预设时段的时长递减；和/或，在从靠近第一控制信号输入端指向远离第一控制信号输入端的方向上，多个驱动电路的预设时段的时长递减，使得靠近数据信号输入端的发光元件的发光时间相对于远离数据信号输入端的发光元件的发光时间较短，和/或，使得靠近第一控制信号输入端的发光元件相对于远离第一控制信号输入端的发光元件的发光时间较短，有利于近端和远端的发光元件的发光亮度相同，改善显示装置的显示问题。', '本申请提供一种发光基板及显示装置，通过在从靠近数据信号输入端指向远离数据信号输入端的方向上，多个驱动电路的预设时段的时长递减；和/或，在从靠近第一控制信号输入端指向远离第一控制信号输入端的方向上，多个驱动电路的预设时段的时长递减，使得靠近数据信号输入端的发光元件的发光时间相对于远离数据信号输入端的发光元件的发光时间较短，和/或，使得靠近第一控制信号输入端的发光元件相对于远离第一控制信号输入端的发光元件的发光时间较短，有利于近端和远端的发光元件的发光亮度相同，改善显示装置的显示问题。', 'CN202011238126.4', 1604851200, 'CN112331151A', 1612454400, 1612454400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 5, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 9, 1, 1, 1, 0, NULL, '916', NULL, NULL, NULL, 'CN106205540A | CN106782363A | CN108538241A | CN109509446A | CN109686290A | CN109920363A | CN110047436A | CN111798804A | KR1020200110531A', 'CN113035139A', NULL, 1, '\\20220510\\823797fc7c734b299590188f59414ef2.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41357, 41359, 41358, 1);
INSERT INTO `os_patent` VALUES (23929, '驱动TFT的灰阶补偿方法、装置及其显示面板、显示装置', '驱动TFT的灰阶补偿方法、装置及其显示面板、显示装置', 'CN112365836B', '本申请公开了一种驱动TFT的灰阶补偿方法、装置及其显示面板、显示装置，该方法包括以下步骤：获取驱动TFT的各个灰阶的侦测电流电压比；将各侦测电流电压比中的最大值确认为第一K值；将对应第一K值的灰阶确认为中间灰阶；获取若干个对应低灰阶的侦测电流电压比，对各个对应低灰阶的侦测电流电压比进行拟合处理，得到第二K值；在驱动TFT的待补偿灰阶为低灰阶时，根据第二K值对待补偿灰阶进行数据补偿；在驱动TFT的待补偿灰阶为高灰阶时，根据第一K值对待补偿灰阶进行数据补偿，进而实现对驱动TFT的低灰阶K值补偿，避免了驱动TFT的低灰阶K值补偿阶段发生过补，实现显示设备在低灰阶和高灰阶均显示均匀。', '本申请公开了一种驱动TFT的灰阶补偿方法、装置及其显示面板、显示装置，该方法包括以下步骤：获取驱动TFT的各个灰阶的侦测电流电压比；将各侦测电流电压比中的最大值确认为第一K值；将对应第一K值的灰阶确认为中间灰阶；获取若干个对应低灰阶的侦测电流电压比，对各个对应低灰阶的侦测电流电压比进行拟合处理，得到第二K值；在驱动TFT的待补偿灰阶为低灰阶时，根据第二K值对待补偿灰阶进行数据补偿；在驱动TFT的待补偿灰阶为高灰阶时，根据第一K值对待补偿灰阶进行数据补偿，进而实现对驱动TFT的低灰阶K值补偿，避免了驱动TFT的低灰阶K值补偿阶段发生过补，实现显示设备在低灰阶和高灰阶均显示均匀。', 'CN202011237808.3', 1604851200, 'CN112365836B', 1632412800, 1613059200, NULL, 1632412800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 17, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 14, 0, 0, 0, 0, NULL, '916', NULL, '刘承奇', NULL, 'CN101777321A | CN107657606A | CN109859692A | CN110738962A | CN110751933A | CN110767132A | CN111128069A | CN111354312A | CN111462680A | CN111902857A | CN1763831A | KR1020100043851A | US20180315374A1 | US20190206326A1', NULL, NULL, 1, '\\20220510\\f182c7d339664831829e3ca2bc7d05c1.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41360, 41362, 41361, 2);
INSERT INTO `os_patent` VALUES (23930, '显示基板及制备方法', '显示基板及制备方法', 'CN112420745A', '一种显示基板，至少包括：衬底基板以及第一薄膜晶体管、存储电容、第二薄膜晶体管和发光单元，且所述第一薄膜晶体管为无遮光层的薄膜晶体管，所述第二薄膜晶体管为具有顶部遮光层的薄膜晶体管；所述第二薄膜晶体管还包括缓冲层、第二有源层、第二栅极绝缘层、第二栅极、第二层间绝缘层、第二漏极和第二源级、遮光层以及钝化层；其中，所述第二漏极、所述第二源级和所述遮光层均通过第一金属薄膜经图案化后形成，所述遮光层完全覆盖所述第二栅极所在的区域，且所述遮光层的第一端延伸至所述第二漏极所在的区域。', '一种显示基板，至少包括：衬底基板以及第一薄膜晶体管、存储电容、第二薄膜晶体管和发光单元，且所述第一薄膜晶体管为无遮光层的薄膜晶体管，所述第二薄膜晶体管为具有顶部遮光层的薄膜晶体管；所述第二薄膜晶体管还包括缓冲层、第二有源层、第二栅极绝缘层、第二栅极、第二层间绝缘层、第二漏极和第二源级、遮光层以及钝化层；其中，所述第二漏极、所述第二源级和所述遮光层均通过第一金属薄膜经图案化后形成，所述遮光层完全覆盖所述第二栅极所在的区域，且所述遮光层的第一端延伸至所述第二漏极所在的区域。', 'CN202011245154.9', 1604937600, 'CN112420745A', 1614268800, 1614268800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\de956793058243389a51fd4f69300bf7.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41363, 41365, 41364, 1);
INSERT INTO `os_patent` VALUES (23931, '显示驱动基板、显示驱动基板的制作方法以及显示面板', '显示驱动基板、显示驱动基板的制作方法以及显示面板', 'CN112420764A', '本申请涉及一种显示驱动基板、显示驱动基板的制作方法以及显示面板；所述显示驱动基板包括N个驱动单元；各驱动单元包括开关TFT区、驱动TFT区、电容区以及LED键合区；开关TFT区内的数据金属层和源极金属层设置在玻璃基板上，并通过第一半导体层连接；驱动TFT区内的电压源金属层和第一避光层设置在玻璃基板上，并通过第二半导体层连接，第二栅极金属层的另一端延伸设置在第一半导体层上；电容区内的第二避光层、第三栅极绝缘层和第三栅极金属层依次层叠设置在玻璃基板上，形成电容；电源电极金属层用于键合Micro LED；简化了显示驱动基板的工艺流程，相对于传统结构可缩小像素内开孔的尺寸，减少了电容占比，有利于提高像素密度。', '本申请涉及一种显示驱动基板、显示驱动基板的制作方法以及显示面板；所述显示驱动基板包括N个驱动单元；各驱动单元包括开关TFT区、驱动TFT区、电容区以及LED键合区；开关TFT区内的数据金属层和源极金属层设置在玻璃基板上，并通过第一半导体层连接；驱动TFT区内的电压源金属层和第一避光层设置在玻璃基板上，并通过第二半导体层连接，第二栅极金属层的另一端延伸设置在第一半导体层上；电容区内的第二避光层、第三栅极绝缘层和第三栅极金属层依次层叠设置在玻璃基板上，形成电容；电源电极金属层用于键合Micro LED；简化了显示驱动基板的工艺流程，相对于传统结构可缩小像素内开孔的尺寸，减少了电容占比，有利于提高像素密度。', 'CN202011238092.9', 1604851200, 'CN112420764A', 1614268800, 1614268800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 1, 1, 1, 0, NULL, '916', NULL, NULL, NULL, NULL, 'CN113224225A', NULL, 1, '\\20220510\\789a367cd8154724b13661ae64c74f77.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41366, 41368, 41367, 1);
INSERT INTO `os_patent` VALUES (23932, '灯板及其制造方法、显示装置', '灯板及其制造方法、显示装置', 'CN112420765A', '本申请提供一种灯板及其制造方法、显示装置，本申请采用第一半色调掩模板对第一绝缘层以及半导体层进行图案化，且采用第二半色调掩模板对第二导电层以及第三导电层进行图案化，以减少光罩使用数目，且第三导电构件形成于第二导电构件上能避免第二导电构件氧化，避免第二导电构件、第三导电构件以及第一导电构件电性连接失效的问题。', '本申请提供一种灯板及其制造方法、显示装置，本申请采用第一半色调掩模板对第一绝缘层以及半导体层进行图案化，且采用第二半色调掩模板对第二导电层以及第三导电层进行图案化，以减少光罩使用数目，且第三导电构件形成于第二导电构件上能避免第二导电构件氧化，避免第二导电构件、第三导电构件以及第一导电构件电性连接失效的问题。', 'CN202011265394.5', 1605196800, 'CN112420765A', 1614268800, 1614268800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 1, 1, 1, 0, NULL, '916', NULL, NULL, NULL, NULL, 'CN114188820A', NULL, 1, '\\20220510\\b201ef639cec467092c868693234fabf.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41369, 41371, 41370, 1);
INSERT INTO `os_patent` VALUES (23933, 'Micro LED转移装置及转移方法、显示面板', 'Micro LED转移装置及转移方法、显示面板', 'CN112420894A', '本申请公开了一种Micro LED转移装置及转移方法、显示面板，所述Micro LED转移装置包括打印装置；所述打印装置包括基板以及位于所述基板表面的释放层；所述基板用于吸附Micro LED；所述释放层用于在设定的湿度条件下分离所述基板及所述Micro LED，以改善转移Micro LED过程中出现局部力失衡导致转移效果不佳，影响产品良率的问题，提高Micro LED的转移精度及产品良率。', '本申请公开了一种Micro LED转移装置及转移方法、显示面板，所述Micro LED转移装置包括打印装置；所述打印装置包括基板以及位于所述基板表面的释放层；所述基板用于吸附Micro LED；所述释放层用于在设定的湿度条件下分离所述基板及所述Micro LED，以改善转移Micro LED过程中出现局部力失衡导致转移效果不佳，影响产品良率的问题，提高Micro LED的转移精度及产品良率。', 'CN202011204175.6', 1604246400, 'CN112420894A', 1614268800, 1614268800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 17, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 6, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN110088920A | CN110112170A | CN110660712A | CN111081622A | CN111518538A | WO2008040151A1', NULL, NULL, 1, '\\20220510\\49314f54da864132b5e839ec8d0a9d6a.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41372, 41374, 41373, 1);
INSERT INTO `os_patent` VALUES (23934, 'QD-miniLED发光器件制作方法及QD-miniLED发光器件', 'QD-miniLED发光器件制作方法及QD-miniLED发光器件', 'CN112420895B', '本申请公开了一种QD‑miniLED发光器件制作方法及QD‑miniLED发光器件。该QD‑miniLED发光器件制作方法包括以下步骤：对多个第一miniLED单体的表面进行超疏水化处理，得到多个第二miniLED单体；将所述多个第二miniLED单体转移到TFT阵列基板上，所述多个第二miniLED单体在所述TFT阵列基板上间隔分布；在所述TFT阵列基板上的多个第二miniLED单体的间隙内填充遮光材料层；将所述TFT阵列基板与设置有像素化的量子点基板对组贴合，得到QD‑miniLED发光器件。本申请实施例提供的QD‑miniLED发光器件制作方法通过在miniLED单体的表面进行超疏水化处理，从而降低miniLED单体的表面的浸润性，从而可以避免后续进行遮光材料层的涂布时，遮光材料层在miniLED单体的发光面残留，从而可以提高QD‑miniLED发光器的质量，降低不良率。', '本申请公开了一种QD‑miniLED发光器件制作方法及QD‑miniLED发光器件。该QD‑miniLED发光器件制作方法包括以下步骤：对多个第一miniLED单体的表面进行超疏水化处理，得到多个第二miniLED单体；将所述多个第二miniLED单体转移到TFT阵列基板上，所述多个第二miniLED单体在所述TFT阵列基板上间隔分布；在所述TFT阵列基板上的多个第二miniLED单体的间隙内填充遮光材料层；将所述TFT阵列基板与设置有像素化的量子点基板对组贴合，得到QD‑miniLED发光器件。本申请实施例提供的QD‑miniLED发光器件制作方法通过在miniLED单体的表面进行超疏水化处理，从而降低miniLED单体的表面的浸润性，从而可以避免后续进行遮光材料层的涂布时，遮光材料层在miniLED单体的发光面残留，从而可以提高QD‑miniLED发光器的质量，降低不良率。', 'CN202011237249.6', 1604851200, 'CN112420895B', 1643299200, 1614268800, NULL, 1643299200, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 9, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 10, 0, 0, 0, 0, NULL, '916', NULL, '刘凌云', NULL, 'CN103413819A | CN105810783A | CN106206871A | CN107968105A | CN109300943A | CN109817826A | CN111063269A | CN111816746A | CN1763979A | US10402145B2', NULL, NULL, 1, '\\20220510\\97a24d34f769418f855d1c0702b05b76.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 41375, 41377, 41376, 2);
INSERT INTO `os_patent` VALUES (23935, '微型发光二极管及显示面板', '微型发光二极管及显示面板', 'CN112420901B', '本申请提供一种微型发光二极管，其包括一发光芯片本体和一光转换结构，所述光转换结构设置于所述发光芯片本体的发光侧，并用于将所述发光芯片本体发出的光转换为白光；其中，所述光转换结构包括缓冲层和光转换单元，所述缓冲层上设置有至少一凹槽，所述光转换单元容置于所述凹槽内。本申请提高了蓝光芯片的光能利用率，降低了产品的能耗。', '本申请提供一种微型发光二极管，其包括一发光芯片本体和一光转换结构，所述光转换结构设置于所述发光芯片本体的发光侧，并用于将所述发光芯片本体发出的光转换为白光；其中，所述光转换结构包括缓冲层和光转换单元，所述缓冲层上设置有至少一凹槽，所述光转换单元容置于所述凹槽内。本申请提高了蓝光芯片的光能利用率，降低了产品的能耗。', 'CN202011230104.3', 1604592000, 'CN112420901B', 1643644800, 1614268800, NULL, 1643644800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 0, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, '刘凌云', NULL, NULL, NULL, NULL, 1, '\\20220510\\9aa575a5d83a45c980fb70c8be1083a9.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41378, 41380, 41379, 2);
INSERT INTO `os_patent` VALUES (23936, '显示面板', '显示面板', 'CN112509477A', '本发明提供一种显示面板，显示面板包括阵列分布的子显示面板以及位于子显示面板间隙的补光构件，补光构件包括半透射半反射板以及全反射板，半透射半反射板靠近子显示面板边缘设置，并延伸至显示区，全反射板位于子显示面板的间隙上方，且全反射板与半透射半反射板对应设置，显示区中光源垂直发射光线，经过半透射半反射板时，约50％的光折射出去，另外50％的光反射到全反射板上，全反射板上将该反射光再次反射出去，实现了子显示面板的边框和间隙有垂直光线出射，可消除暗区的存在，实现无缝拼接显示屏，从而提高显示面板显示的均一性。', '本发明提供一种显示面板，显示面板包括阵列分布的子显示面板以及位于子显示面板间隙的补光构件，补光构件包括半透射半反射板以及全反射板，半透射半反射板靠近子显示面板边缘设置，并延伸至显示区，全反射板位于子显示面板的间隙上方，且全反射板与半透射半反射板对应设置，显示区中光源垂直发射光线，经过半透射半反射板时，约50％的光折射出去，另外50％的光反射到全反射板上，全反射板上将该反射光再次反射出去，实现了子显示面板的边框和间隙有垂直光线出射，可消除暗区的存在，实现无缝拼接显示屏，从而提高显示面板显示的均一性。', 'CN202011410322.5', 1607011200, 'CN112509477A', 1615824000, 1615824000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 7, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN102207567A | CN103903519A | CN106057095A | CN106297582A | CN107601920A | CN210667576U | US20170155891A1', NULL, NULL, 1, '\\20220510\\f921547e25f641d9b88a77c8286af3ae.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41381, 41383, 41382, 1);
INSERT INTO `os_patent` VALUES (23937, '背光模组及显示装置', '背光模组及显示装置', 'CN112542143A', '本申请公开了一种背光模组及显示装置。所述背光模组包括：一灯组；以及一驱动板，与所述灯组连接，所述驱动板用于向所述灯组传输控制信号；其中所述驱动板包括多个基于不同传输协议以传输控制信号的接口及一驱动芯片，所述驱芯片用于根据显示图像获得用以控制所述灯组的所述控制信号，其中显示图像为通过一外部的系统板所获取的。本申请通过驱动板实现将显示图像转换成控制信息，实现对Mini‑LED背光的精准控制，并且所述驱动板上设置多个基于不同传输协议以传输控制信号的接口，提升整个显示装置的兼容性。此外，驱动板通过采用可编程器件而能够不断的更新，从而满足用户的需求。', '本申请公开了一种背光模组及显示装置。所述背光模组包括：一灯组；以及一驱动板，与所述灯组连接，所述驱动板用于向所述灯组传输控制信号；其中所述驱动板包括多个基于不同传输协议以传输控制信号的接口及一驱动芯片，所述驱芯片用于根据显示图像获得用以控制所述灯组的所述控制信号，其中显示图像为通过一外部的系统板所获取的。本申请通过驱动板实现将显示图像转换成控制信息，实现对Mini‑LED背光的精准控制，并且所述驱动板上设置多个基于不同传输协议以传输控制信号的接口，提升整个显示装置的兼容性。此外，驱动板通过采用可编程器件而能够不断的更新，从而满足用户的需求。', 'CN202011404442.4', 1606924800, 'CN112542143A', 1616428800, 1616428800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 4, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 5, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN101609658A | CN106210593A | CN109064980A | CN111818284A | CN209591492U', NULL, NULL, 1, '\\20220510\\17b7b512e9ec410198781cabc16a1ab7.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41384, 41386, 41385, 1);
INSERT INTO `os_patent` VALUES (23938, '显示装置及其驱动方法', '显示装置及其驱动方法', 'CN112558352A', '本申请提出了一种显示装置及其驱动方法，该显示装置包括显示面板和驱动芯片，所述显示面板至少包括沿第一方向并列设置的第一显示区及第二显示区，所述第一显示区内设有第一驱动电路，所述第二显示区内设有第二驱动电路；所述驱动芯片设置于所述显示面板的中部，通过将所述显示面板设置为至少包括沿第一方向并列设置的第一显示区及第二显示区，并将驱动芯片设置于所述显示面板的中部，减小了第一显示区和第二显示区中诸如Mini‑LED等发光器件到所述驱动芯片的距离，使得位于第一显示区内第一数据线和位于第二显示区内第二数据线的长度更加均匀，避免诸如第一数据线和第二数据线等不同数据线由于长度差异较大导致显示装置亮暗不均的问题。', '本申请提出了一种显示装置及其驱动方法，该显示装置包括显示面板和驱动芯片，所述显示面板至少包括沿第一方向并列设置的第一显示区及第二显示区，所述第一显示区内设有第一驱动电路，所述第二显示区内设有第二驱动电路；所述驱动芯片设置于所述显示面板的中部，通过将所述显示面板设置为至少包括沿第一方向并列设置的第一显示区及第二显示区，并将驱动芯片设置于所述显示面板的中部，减小了第一显示区和第二显示区中诸如Mini‑LED等发光器件到所述驱动芯片的距离，使得位于第一显示区内第一数据线和位于第二显示区内第二数据线的长度更加均匀，避免诸如第一数据线和第二数据线等不同数据线由于长度差异较大导致显示装置亮暗不均的问题。', 'CN202011412310.6', 1607011200, 'CN112558352A', 1616688000, 1616688000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 3, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 8, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN102396015A | CN102460549A | CN103927978A | CN111599302A | CN1499474A | JP2008309825A | TW562972B | US20100295837A1', NULL, NULL, 1, '\\20220510\\d200d670e39544f887846ff998d94bb8.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41387, 41389, 41388, 2);
INSERT INTO `os_patent` VALUES (23939, '分体式背板及显示装置', '分体式背板及显示装置', 'CN112558353A', '本申请提供一种分体式背板及显示装置，分体式背板包括相互连接的上背板和下背板，分体式背板包括用于承载MiniLED灯板的承载面和位于承载面相反一侧的背面，上背板和下背板的背面均设有加强筋，以此加强上背板和下背板的强度和刚度，减少上背板在抬取过程中的形变量，从而减小MiniLED灯板之间碰撞的几率，降低MiniLED灯板发生破碎的风险。', '本申请提供一种分体式背板及显示装置，分体式背板包括相互连接的上背板和下背板，分体式背板包括用于承载MiniLED灯板的承载面和位于承载面相反一侧的背面，上背板和下背板的背面均设有加强筋，以此加强上背板和下背板的强度和刚度，减少上背板在抬取过程中的形变量，从而减小MiniLED灯板之间碰撞的几率，降低MiniLED灯板发生破碎的风险。', 'CN202011446765.X', 1607443200, 'CN112558353A', 1616688000, 1616688000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 12, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN102401352A | CN102402029A | CN103353096A | CN111781764A | CN111999936A | CN1662124A | CN202979510U | CN203298215U | CN206515578U | CN209215812U | CN211086862U | JP1996184125A', NULL, NULL, 1, '\\20220510\\32e43c09e64d4e74b081ca13a9314be2.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41390, 41392, 41391, 1);
INSERT INTO `os_patent` VALUES (23940, '一种显示面板和显示面板制程方法', '一种显示面板和显示面板制程方法', 'CN112562524A', '本申请提供一种显示面板和显示面板制程方法。显示面板包括阵列基板、覆晶薄膜、微型发光二极管、隔离带以及树脂封装层。所述阵列基板具有相对设置的第一面和第二面以及第一端和第二端。所述覆晶薄膜设置在所述第一面，且位于所述第一端。所述微型发光二极管阵列设置在所述第一面，所述隔离带可拆卸地安装在所述第一面，且位于所述覆晶薄膜与所述微型发光二极管之间。所述树脂封装层覆盖所述覆晶薄膜靠近所述隔离带的端部，且延伸至所述隔离带。其中，当树脂固化形成所述树脂封装层后，所述隔离带从所述第一面拆卸。本申请可以避免树脂溢出至微型发光二极管设置的区域。', '本申请提供一种显示面板和显示面板制程方法。显示面板包括阵列基板、覆晶薄膜、微型发光二极管、隔离带以及树脂封装层。所述阵列基板具有相对设置的第一面和第二面以及第一端和第二端。所述覆晶薄膜设置在所述第一面，且位于所述第一端。所述微型发光二极管阵列设置在所述第一面，所述隔离带可拆卸地安装在所述第一面，且位于所述覆晶薄膜与所述微型发光二极管之间。所述树脂封装层覆盖所述覆晶薄膜靠近所述隔离带的端部，且延伸至所述隔离带。其中，当树脂固化形成所述树脂封装层后，所述隔离带从所述第一面拆卸。本申请可以避免树脂溢出至微型发光二极管设置的区域。', 'CN202011409612.8', 1607011200, 'CN112562524A', 1616688000, 1616688000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 3, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN111208678A | CN111986576A | CN111987132A', NULL, NULL, 1, '\\20220510\\225017286a48450d8b4789cf74481d05.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41393, 41395, 41394, 1);
INSERT INTO `os_patent` VALUES (23941, '显示基板及其制备方法', '显示基板及其制备方法', 'CN112599537A', '本发明公开一种显示基板及其制备方法。显示基板包括一衬底基板；驱动电路层，形成于衬底基板的底面，其包含多个电路单元，其中至少一个电路单元由低温多晶硅薄膜晶体管组成；显示阵列层，形成于衬底基板的顶面，包含多个阵列分布的像素单元，每一像素单元包含至少一氧化物薄膜晶体管；侧面导线，形成于衬底基板的侧壁；电路单元通过侧面导线电连接显示阵列层。本发明可以实现无边框显示。', '本发明公开一种显示基板及其制备方法。显示基板包括一衬底基板；驱动电路层，形成于衬底基板的底面，其包含多个电路单元，其中至少一个电路单元由低温多晶硅薄膜晶体管组成；显示阵列层，形成于衬底基板的顶面，包含多个阵列分布的像素单元，每一像素单元包含至少一氧化物薄膜晶体管；侧面导线，形成于衬底基板的侧壁；电路单元通过侧面导线电连接显示阵列层。本发明可以实现无边框显示。', 'CN202011458570.7', 1607616000, 'CN112599537A', 1617292800, 1617292800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 25, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\c8e4de8ff6934560a4de070c76edf961.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41396, 41398, 41397, 1);
INSERT INTO `os_patent` VALUES (23942, '阵列基板及转移方法', '阵列基板及转移方法', 'CN112599651B', '本发明提供一种阵列基板及转移方法，所述阵列基板设置有多个键合凸起，每一所述键合凸起被配置为至少用于将一微型器件固持于其表面上，以使被固持的所述微型器件电性连接于所述阵列基板；本发明所述阵列基板及所述转移方法能使的阵列基板仅通过键合凸起与微型器件接触，从而避免无需转移的微型器件与阵列基板的接触，进而能解决ACF bonding面临的ACF容易出现破孔或撕裂以及无法进行Micro LED的修补的问题。', '本发明提供一种阵列基板及转移方法，所述阵列基板设置有多个键合凸起，每一所述键合凸起被配置为至少用于将一微型器件固持于其表面上，以使被固持的所述微型器件电性连接于所述阵列基板；本发明所述阵列基板及所述转移方法能使的阵列基板仅通过键合凸起与微型器件接触，从而避免无需转移的微型器件与阵列基板的接触，进而能解决ACF bonding面临的ACF容易出现破孔或撕裂以及无法进行Micro LED的修补的问题。', 'CN202011438338.7', 1607270400, 'CN112599651B', 1643040000, 1617292800, NULL, 1643040000, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 6, 0, 0, 0, 0, NULL, '916', NULL, '马佳慧', NULL, 'CN108701691A | CN109326549A | CN110148655A | CN111863692A | CN111987036A | US5739053A', NULL, NULL, 1, '\\20220510\\8b0128e58ae24a5cb987c1b866137def.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 41399, 41401, 41400, 2);
INSERT INTO `os_patent` VALUES (23943, 'micro-LED显示面板、micro-LED像素电路及显示装置', 'micro-LED显示面板、micro-LED像素电路及显示装置', 'CN112634826B', '本发明公开了一种micro‑LED显示面板、micro‑LED像素电路及显示装置，包括显示区域与非显示区域，所述非显示区域位于所述micro‑LED显示面板的四周；所述显示区域内包括遮光层，所述遮光层包括：与所述非显示区域邻接的第一遮光层和不与所述非显示区域邻接的第二遮光层；所述非显示区域内包括VDD环绕导电线和VSS环绕导电线，所述VSS环绕导电线环绕在所述第一遮光层的四周，所述VDD环绕导电线环绕在所述VSS环绕导电线的四周；所述VDD环绕导电线和所述VSS环绕导电线通过旁路通道与覆晶薄膜相连接。', '本发明公开了一种micro‑LED显示面板、micro‑LED像素电路及显示装置，包括显示区域与非显示区域，所述非显示区域位于所述micro‑LED显示面板的四周；所述显示区域内包括遮光层，所述遮光层包括：与所述非显示区域邻接的第一遮光层和不与所述非显示区域邻接的第二遮光层；所述非显示区域内包括VDD环绕导电线和VSS环绕导电线，所述VSS环绕导电线环绕在所述第一遮光层的四周，所述VDD环绕导电线环绕在所述VSS环绕导电线的四周；所述VDD环绕导电线和所述VSS环绕导电线通过旁路通道与覆晶薄膜相连接。', 'CN202110016157.3', 1609948800, 'CN112634826B', 1643644800, 1617897600, NULL, 1643644800, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 0, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 15, 0, 0, 0, 0, NULL, '916', NULL, '陈晨', NULL, 'CN107331685A | CN109768027A | CN110708790A | CN111640774A | CN111710690A | CN112086037A | CN112164705A | CN1645445A | EP3340220A1 | KR1020150049640A | TWI667643B | US20020011976A1 | US20140362319A1 | US20190371879A1 | US20200350361A1', NULL, NULL, 1, '\\20220510\\5e9ee5c600844e86a18db9f8a81ab596.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 41402, 41404, 41403, 2);
INSERT INTO `os_patent` VALUES (23944, '微型发光二极管转移设备及转移方法', '微型发光二极管转移设备及转移方法', 'CN112635368A', '本发明提供了一种微型发光二极管转移设备及转移方法。所述微型发光二极管转移设备中包括操作台、光源发生器以及光致磁性基板。所述光源发生器设于所述操作台上方，其具有若干发光单元，每一发光单元都具有一发光侧，所述发光侧朝向所述操作台。所述光致磁性基板具有若干光致磁性单元，用以吸附微型发光二极管。', '本发明提供了一种微型发光二极管转移设备及转移方法。所述微型发光二极管转移设备中包括操作台、光源发生器以及光致磁性基板。所述光源发生器设于所述操作台上方，其具有若干发光单元，每一发光单元都具有一发光侧，所述发光侧朝向所述操作台。所述光致磁性基板具有若干光致磁性单元，用以吸附微型发光二极管。', 'CN202011596387.3', 1609171200, 'CN112635368A', 1617897600, 1617897600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 3, 0, 0, 0, 1, NULL, '916', NULL, NULL, NULL, 'CN109411392A | CN110335844A | US20200194616A1', NULL, '李国栋: \"《当代磁学》\", 31 August 1999, 中国科学技术大学出版社', 1, '\\20220510\\730128223c87406281b533bd2aab9a0b.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41405, 41407, 41406, 1);
INSERT INTO `os_patent` VALUES (23945, '一种磁吸式MicroLED巨量转移结构及方法', '一种磁吸式MicroLED巨量转移结构及方法', 'CN112635400A', '本申请实施例提供一种磁吸式MicroLED巨量转移结构，包括：基底，基底的一面上制备有LED芯片阵列，LED芯片阵列的每个电极上设置有第一导电粘接剂层和第一软磁材料层；以及目标电路基板，目标电路基板的一面上设置有第二导电粘接剂层阵列和第二软磁材料层阵列；第一导电粘接剂层与第二导电粘接剂层一一对应，第一软磁材料层与第二软磁材料层一一对应，LED芯片阵列和目标电路基板可通过第一导电粘接剂层和第二导电粘接剂层利用热压工艺进行绑定连接；第一软磁材料层和第二软磁材料层的居里温度低于热压工艺的加热温度。本申请实施例MicroLED巨量转移的定位精确，工艺简单易行，能够完成巨量转移释放需求。', '本申请实施例提供一种磁吸式MicroLED巨量转移结构，包括：基底，基底的一面上制备有LED芯片阵列，LED芯片阵列的每个电极上设置有第一导电粘接剂层和第一软磁材料层；以及目标电路基板，目标电路基板的一面上设置有第二导电粘接剂层阵列和第二软磁材料层阵列；第一导电粘接剂层与第二导电粘接剂层一一对应，第一软磁材料层与第二软磁材料层一一对应，LED芯片阵列和目标电路基板可通过第一导电粘接剂层和第二导电粘接剂层利用热压工艺进行绑定连接；第一软磁材料层和第二软磁材料层的居里温度低于热压工艺的加热温度。本申请实施例MicroLED巨量转移的定位精确，工艺简单易行，能够完成巨量转移释放需求。', 'CN202110016028.4', 1609948800, 'CN112635400A', 1617897600, 1617897600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\83828fbf258040e7b65fd47c6e16922c.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41408, 41410, 41409, 1);
INSERT INTO `os_patent` VALUES (23946, '自发光显示装置', '自发光显示装置', 'CN112669717A', '本发明提供一种自发光显示装置，包括自发光显示面板和设置于自发光显示面板背部的液流散热组件，所述液流散热组件包括液体泵、第一管道、第二管道以及散热板，其中，液体泵包括用于散热液体流出的输出口，第一管道的一端与输出口相连，通过输出口流出的散热液体从第一管道流经散热板后从第二管道流出，从而散热板将自发光显示面板传导出来的热量进行吸收后由第二管道排出，完成散热过程，进而大大提高了自发光显示装置的散热性能。', '本发明提供一种自发光显示装置，包括自发光显示面板和设置于自发光显示面板背部的液流散热组件，所述液流散热组件包括液体泵、第一管道、第二管道以及散热板，其中，液体泵包括用于散热液体流出的输出口，第一管道的一端与输出口相连，通过输出口流出的散热液体从第一管道流经散热板后从第二管道流出，从而散热板将自发光显示面板传导出来的热量进行吸收后由第二管道排出，完成散热过程，进而大大提高了自发光显示装置的散热性能。', 'CN202011548226.7', 1608739200, 'CN112669717A', 1618502400, 1618502400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 9, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN101865389A | CN106255395A | CN107908043A | CN1722477A | CN1889256A | CN201044236Y | CN203308570U | CN203880657U | CN205508305U', NULL, NULL, 1, '\\20220510\\db7e41b01eae46f2a03969abeb3ccfce.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41411, 41413, 41412, 1);
INSERT INTO `os_patent` VALUES (23947, '显示背板及其制备方法、显示面板', '显示背板及其制备方法、显示面板', 'CN112687722A', '本发明提供一种显示背板及其制备方法、显示面板，显示背板包括基板、第一金属层、层间介质层、第二金属层、附加金属层、减反层以及平坦层，第二金属层和附加金属层设置于层间介质层远离基板的一侧，减反层设置于第二金属层远离基板的一侧，平坦层覆盖所述第二金属层，附加金属层与第一金属层对应设置，以使位于第一金属层上方的平坦层的厚度与位于第二金属层上方的平坦层的厚度相等，通过制备与第二金属层同层设置的附加金属层，避免由于不同膜层的金属走线上方的平坦层产生的薄膜干涉现象对减反效果的影响，能够优化显示面板的减反效果。', '本发明提供一种显示背板及其制备方法、显示面板，显示背板包括基板、第一金属层、层间介质层、第二金属层、附加金属层、减反层以及平坦层，第二金属层和附加金属层设置于层间介质层远离基板的一侧，减反层设置于第二金属层远离基板的一侧，平坦层覆盖所述第二金属层，附加金属层与第一金属层对应设置，以使位于第一金属层上方的平坦层的厚度与位于第二金属层上方的平坦层的厚度相等，通过制备与第二金属层同层设置的附加金属层，避免由于不同膜层的金属走线上方的平坦层产生的薄膜干涉现象对减反效果的影响，能够优化显示面板的减反效果。', 'CN202011548943.X', 1608739200, 'CN112687722A', 1618848000, 1618848000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 14, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\d8f590d2472542adb0c78a610f9b66c7.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41414, 41416, 41415, 1);
INSERT INTO `os_patent` VALUES (23948, '液晶显示装置', '液晶显示装置', 'CN112698529A', '本申请提供一种液晶显示装置，包括液晶显示面板、第一背光组件和第二背光组件，其中，第一背光组件设有透光孔，第二背光组件相对于透光孔设置并包括调光液晶片、发光元件和电路板。液晶显示面板对应于透光孔定义有感光区域，当感光区域需要使外界环境光穿过时，电路板使调光液晶片处于透明状态并使外界环境光入射到第二背光组件远离第一背光组件的远离所述液晶显示面板的一侧；当感光区域需要进行显示时，电路板使调光液晶片处于雾化状态并使发光元件发光而提供补偿面光源经过调光液晶片导光入射到透光孔对应的感光区域。同时，第二背光组件的调光液晶片和电路板层叠设置并通过粘贴的方式电性连接，能使得第二背光组件的结构简单，实现超薄设计。', '本申请提供一种液晶显示装置，包括液晶显示面板、第一背光组件和第二背光组件，其中，第一背光组件设有透光孔，第二背光组件相对于透光孔设置并包括调光液晶片、发光元件和电路板。液晶显示面板对应于透光孔定义有感光区域，当感光区域需要使外界环境光穿过时，电路板使调光液晶片处于透明状态并使外界环境光入射到第二背光组件远离第一背光组件的远离所述液晶显示面板的一侧；当感光区域需要进行显示时，电路板使调光液晶片处于雾化状态并使发光元件发光而提供补偿面光源经过调光液晶片导光入射到透光孔对应的感光区域。同时，第二背光组件的调光液晶片和电路板层叠设置并通过粘贴的方式电性连接，能使得第二背光组件的结构简单，实现超薄设计。', 'CN202011576694.5', 1609084800, 'CN112698529A', 1619107200, 1619107200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 8, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN109541849A | CN110231735A | CN110658582A | CN110879496A | CN111050045A | CN111352268A | CN111752027A | US20140063356A1', NULL, NULL, 1, '\\20220510\\96d53d1728af4512a39850386d13fbff.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41417, 41419, 41418, 1);
INSERT INTO `os_patent` VALUES (23949, 'mini-LED装置及制作方法', 'mini-LED装置及制作方法', 'CN112736178A', '本发明公开了一种mini‑LED装置及制作方法，所述mini‑LED装置分为绑定区、TFT区和表面贴合区，所述mini‑LED装置包括：衬底基板，TFT器件，绝缘层，金属反射膜，mini‑LED芯片，所述mini‑LED芯片贴合在所述表面贴合区处；透明保护层，所述透明保护层覆盖所述金属反射膜以及所述mini‑LED芯片。本发明提供一种mini‑LED装置及制作方法，在mini‑LED背板工艺制作完成以后制作绝缘层以及反射膜，反射膜起到反射mini‑LED光，提升了mini‑LED装置的发光效率。', '本发明公开了一种mini‑LED装置及制作方法，所述mini‑LED装置分为绑定区、TFT区和表面贴合区，所述mini‑LED装置包括：衬底基板，TFT器件，绝缘层，金属反射膜，mini‑LED芯片，所述mini‑LED芯片贴合在所述表面贴合区处；透明保护层，所述透明保护层覆盖所述金属反射膜以及所述mini‑LED芯片。本发明提供一种mini‑LED装置及制作方法，在mini‑LED背板工艺制作完成以后制作绝缘层以及反射膜，反射膜起到反射mini‑LED光，提升了mini‑LED装置的发光效率。', 'CN202011541777.0', 1608652800, 'CN112736178A', 1619712000, 1619712000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 3, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 12, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 10, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN108535916A | CN108983497A | CN109065529A | CN109585462A | CN110299438A | CN111092091A | CN111580304A | CN112103384A | US10665746B1 | WO2019095214A1', NULL, NULL, 1, '\\20220510\\c115912ca7db47db95d35a35e6b616d3.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41420, 41422, 41421, 2);
INSERT INTO `os_patent` VALUES (23950, '拼接显示面板及其驱动方法、拼接显示装置', '拼接显示面板及其驱动方法、拼接显示装置', 'CN112767849A', '一种拼接显示面板及其驱动方法、拼接显示装置，所述拼接显示面板包括：至少两发光基板，每两相邻的所述发光基板之间具有间隙；至少一发光部，每一所述发光部对应于相应的所述间隙；通过在相邻的两个所述发光基板之间设置所述发光部，减小了相邻的两个所述发光基板之间出现暗态视角的可能，提高了所述拼接显示面板的显示效果。', '一种拼接显示面板及其驱动方法、拼接显示装置，所述拼接显示面板包括：至少两发光基板，每两相邻的所述发光基板之间具有间隙；至少一发光部，每一所述发光部对应于相应的所述间隙；通过在相邻的两个所述发光基板之间设置所述发光部，减小了相邻的两个所述发光基板之间出现暗态视角的可能，提高了所述拼接显示面板的显示效果。', 'CN202110133564.2', 1612108800, 'CN112767849A', 1620316800, 1620316800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 3, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 5, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN102270445A | CN107742511A | CN111653207A | JP2006047799A | US20190107260A1', NULL, NULL, 1, '\\20220510\\81ef1a35f5b545598fd554a591b03e62.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41423, 41425, 41424, 2);
INSERT INTO `os_patent` VALUES (23951, '一种用于透明显示的迷你发光二极管显示面板及拼接屏', '一种用于透明显示的迷你发光二极管显示面板及拼接屏', 'CN112767852A', '本申请公开了一种用于透明显示的迷你发光二极管显示面板及拼接屏。所述显示面板包括阵列基板、设置于所述阵列基板上的多个像素单元；所述阵列基板包括玻璃衬底、设置于所述玻璃衬底上的多个驱动控制单元和金属走线；每一所述驱动控制单元与每一所述像素单元对应连接，所述金属走线与所述驱动控制单元和所述像素单元连接；所述金属走线设置于所述阵列基板的不同膜层上。本申请实施例中利用高透过率的玻璃基板，使金属走线均匀分散在面板内，实现用于透明显示的迷你发光二极管显示面板具有更高的光线透过率和有效提升显示品味。', '本申请公开了一种用于透明显示的迷你发光二极管显示面板及拼接屏。所述显示面板包括阵列基板、设置于所述阵列基板上的多个像素单元；所述阵列基板包括玻璃衬底、设置于所述玻璃衬底上的多个驱动控制单元和金属走线；每一所述驱动控制单元与每一所述像素单元对应连接，所述金属走线与所述驱动控制单元和所述像素单元连接；所述金属走线设置于所述阵列基板的不同膜层上。本申请实施例中利用高透过率的玻璃基板，使金属走线均匀分散在面板内，实现用于透明显示的迷你发光二极管显示面板具有更高的光线透过率和有效提升显示品味。', 'CN202110216080.4', 1614268800, 'CN112767852A', 1620316800, 1620316800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 7, 1, 1, 1, 0, NULL, '916', NULL, NULL, NULL, 'CN106653817A | CN111308761A | CN111653591A | CN111952323A | CN112002713A | CN112086037A | CN211480028U', 'CN113362714A', NULL, 1, '\\20220510\\7dcbc163fee84858b337e5df8c3f1e50.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41426, 41428, 41427, 1);
INSERT INTO `os_patent` VALUES (23952, '微型发光二极管转移设备及其转移方法', '微型发光二极管转移设备及其转移方法', 'CN112802792A', '本申请实施例公开了一种微型发光二极管转移设备及其转移方法，微型发光二极管转移设备包括支架，所述支架包括至少两个吸附臂，所述至少两个吸附臂的同一端为固定端，相对的另一端为开放端，且所述至少两个吸附臂在所述固定端活动连接；吸附头，用以抓取微型发光二极管，所述吸附头连接于相对应的所述吸附臂的开放端。本申请实施例可以极大的提升转移效率，减小资源消耗。', '本申请实施例公开了一种微型发光二极管转移设备及其转移方法，微型发光二极管转移设备包括支架，所述支架包括至少两个吸附臂，所述至少两个吸附臂的同一端为固定端，相对的另一端为开放端，且所述至少两个吸附臂在所述固定端活动连接；吸附头，用以抓取微型发光二极管，所述吸附头连接于相对应的所述吸附臂的开放端。本申请实施例可以极大的提升转移效率，减小资源消耗。', 'CN202110176978.3', 1612627200, 'CN112802792A', 1620921600, 1620921600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 3, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN109273387A | CN110767580A | KR1020140077526A', NULL, NULL, 1, '\\20220510\\a96293fcdb8f4f62b7c3fb89ec5593a3.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41429, 41431, 41430, 1);
INSERT INTO `os_patent` VALUES (23953, '一种显示装置及其制备方法', '一种显示装置及其制备方法', 'CN112802938A', '本申请公开了一种显示装置及其制备方法，所述显示装置包括驱动背板、若干miniLED灯、黑色涂层以及量子点基板，所述黑色涂层包覆每一miniLED灯的侧边，且位于任意两个miniLED灯之间的空隙处。本申请中的显示装置具有良好的防水效果，能抗光串扰，且具有极高的出光效率。', '本申请公开了一种显示装置及其制备方法，所述显示装置包括驱动背板、若干miniLED灯、黑色涂层以及量子点基板，所述黑色涂层包覆每一miniLED灯的侧边，且位于任意两个miniLED灯之间的空隙处。本申请中的显示装置具有良好的防水效果，能抗光串扰，且具有极高的出光效率。', 'CN202110006305.3', 1609776000, 'CN112802938A', 1620921600, 1620921600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 5, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN110518148A | CN111599909A | CN111710690A | CN204271086U | KR101847348B1', NULL, NULL, 1, '\\20220510\\54fdef948d9b42708074595127ff3256.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41432, 41434, 41433, 1);
INSERT INTO `os_patent` VALUES (23954, '一种显示面板', '一种显示面板', 'CN112802941A', '本发明公开了一种显示面板，包括背板和发光元件，所述背板的一侧表面设有多个接收位置，所述背板的膜层中对应每个所述接收位置下方形成有电磁线圈；所述发光元件具有出光面和远离所述出光面的安装面，所述安装面形成有一层磁性材料层；所述接收位置的电磁线圈通电后将所述发光元件吸附安装于所述接收位置。通过控制电磁线圈的电源通断可以实现对发光元件吸附安装，能够高效率地完成发光元件的巨量转移，降低制造成本同时提高产品良率。', '本发明公开了一种显示面板，包括背板和发光元件，所述背板的一侧表面设有多个接收位置，所述背板的膜层中对应每个所述接收位置下方形成有电磁线圈；所述发光元件具有出光面和远离所述出光面的安装面，所述安装面形成有一层磁性材料层；所述接收位置的电磁线圈通电后将所述发光元件吸附安装于所述接收位置。通过控制电磁线圈的电源通断可以实现对发光元件吸附安装，能够高效率地完成发光元件的巨量转移，降低制造成本同时提高产品良率。', 'CN202011612389.7', 1609257600, 'CN112802941A', 1620921600, 1620921600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 5, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN107680983A | CN111292631A | CN111584519A | CN208352323U | US20200203319A1', NULL, NULL, 1, '\\20220510\\6e025e8009dd4eb389e21b2c6a0d0d86.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41435, 41437, 41436, 1);
INSERT INTO `os_patent` VALUES (23955, '显示面板及显示装置', '显示面板及显示装置', 'CN112837627A', '本申请实施例公开了一种显示面板及显示装置，所述显示面板包括相对设置的彩膜基板和阵列基板，所述阵列基板面向所述彩膜基板的一侧设置有多个阵列排布的发光二极管；其中，所述阵列基板的背侧设有抗反射结构，所述抗反射结构以独立或整面的形式设置于所述发光二极管的驱动侧，用以减小发光二极管逆向发出的光线在阵列基板内的反射。所述显示面板及所述显示装置可以防止蓝光LED发出的光线从下方传播到相邻子像素，从而防止图像串扰现象发生。', '本申请实施例公开了一种显示面板及显示装置，所述显示面板包括相对设置的彩膜基板和阵列基板，所述阵列基板面向所述彩膜基板的一侧设置有多个阵列排布的发光二极管；其中，所述阵列基板的背侧设有抗反射结构，所述抗反射结构以独立或整面的形式设置于所述发光二极管的驱动侧，用以减小发光二极管逆向发出的光线在阵列基板内的反射。所述显示面板及所述显示装置可以防止蓝光LED发出的光线从下方传播到相邻子像素，从而防止图像串扰现象发生。', 'CN202110035751.7', 1610380800, 'CN112837627A', 1621872000, 1621872000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 5, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN105489551A | CN108922914A | CN111312793A | US20090146921A1 | US20170133818A1', NULL, NULL, 1, '\\20220510\\815293337e9f41e4b118f7403b1a36a8.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41438, 41440, 41439, 1);
INSERT INTO `os_patent` VALUES (23956, '用于检测微型发光二极管背光模组的检测治具及检测方法', '用于检测微型发光二极管背光模组的检测治具及检测方法', 'CN112858954A', '本申请提出了一种用于检测微型发光二极管背光模组的检测治具及检测方法，微型发光二极管背光模组包括第一检测信号输入端、第二检测信号输入端和至少一被检测单元，每一被检测单元包括连接于第一检测信号输入端的第一正极和连接于第二检测信号输入端的第一负极，第一正极不连接于第一负极；检测治具包括至少一检测单元，每一检测单元包括检测发光二极管和两第一检测探针，两第一检测探针的第一端部连接于检测发光二极管的正极和负极；其中，两第一检测探针的第二端部用于在检测时电性连接于第一正极和第一负极。本申请实施例实现在制程中段实现拦捡异常，可以有效快速预警异常。', '本申请提出了一种用于检测微型发光二极管背光模组的检测治具及检测方法，微型发光二极管背光模组包括第一检测信号输入端、第二检测信号输入端和至少一被检测单元，每一被检测单元包括连接于第一检测信号输入端的第一正极和连接于第二检测信号输入端的第一负极，第一正极不连接于第一负极；检测治具包括至少一检测单元，每一检测单元包括检测发光二极管和两第一检测探针，两第一检测探针的第一端部连接于检测发光二极管的正极和负极；其中，两第一检测探针的第二端部用于在检测时电性连接于第一正极和第一负极。本申请实施例实现在制程中段实现拦捡异常，可以有效快速预警异常。', 'CN202110034592.9', 1610380800, 'CN112858954A', 1622131200, 1622131200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 20, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\325244c75cfb4aabb6bf7b24a8a8ee37.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 41441, 41443, 41442, 1);
INSERT INTO `os_patent` VALUES (23957, '显示装置、拼接显示装置以及绑定结构', '显示装置、拼接显示装置以及绑定结构', 'CN112859460A', '本申请提供一种显示装置，拼接显示装置以及绑定结构。显示装置包括驱动基板、柔性绑定件以及第一共晶焊接层。驱动基板包括显示区和绑定区。显示区与绑定区相邻设置。驱动基板包括第一绑定垫。第一绑定垫位于绑定区。柔性绑定件包括第二绑定垫。第二绑定垫与所述第一绑定垫相对设置。第一共晶焊接层焊接于所述第一绑定垫与所述第二绑定垫之间。第一共晶焊接层的材料为共晶合金焊料。本申请通过使用共晶焊接层焊接驱动基板与柔性绑定件，代替现有技术中使用的ACF胶，从而避免了ACF胶溢胶的问题，能够达到窄边框的效果。', '本申请提供一种显示装置，拼接显示装置以及绑定结构。显示装置包括驱动基板、柔性绑定件以及第一共晶焊接层。驱动基板包括显示区和绑定区。显示区与绑定区相邻设置。驱动基板包括第一绑定垫。第一绑定垫位于绑定区。柔性绑定件包括第二绑定垫。第二绑定垫与所述第一绑定垫相对设置。第一共晶焊接层焊接于所述第一绑定垫与所述第二绑定垫之间。第一共晶焊接层的材料为共晶合金焊料。本申请通过使用共晶焊接层焊接驱动基板与柔性绑定件，代替现有技术中使用的ACF胶，从而避免了ACF胶溢胶的问题，能够达到窄边框的效果。', 'CN202110214461.9', 1614182400, 'CN112859460A', 1622131200, 1622131200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 8, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN101414596A | CN102194978A | CN109216376A | CN110707121A | CN112599535A | CN1638073A | CN211604089U | JP2002009231A', NULL, NULL, 1, '\\20220510\\bd71a65f235f43f498882b582b550537.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41444, 41446, 41445, 1);
INSERT INTO `os_patent` VALUES (23958, '转移方法、微型器件阵列及其制备方法', '转移方法、微型器件阵列及其制备方法', 'CN112864287A', '本发明公开了一种转移方法、微型器件阵列及其制备方法，所述微型器件阵列包括承载基板和承载于所述承载基板上的微型器件，所述微型器件与所述承载基板之间具有一弱化层，所述弱化层被配置成在一作用于所述微型器件阵列的外部力的作用下发生断裂，使得所述微型器件与所述承载基板分离；本发明所述转移方法、微型器件阵列及其制备方法能直接一步转移微型器件，从而能避免采用暂时基板、转移胶材和凸点stamp。', '本发明公开了一种转移方法、微型器件阵列及其制备方法，所述微型器件阵列包括承载基板和承载于所述承载基板上的微型器件，所述微型器件与所述承载基板之间具有一弱化层，所述弱化层被配置成在一作用于所述微型器件阵列的外部力的作用下发生断裂，使得所述微型器件与所述承载基板分离；本发明所述转移方法、微型器件阵列及其制备方法能直接一步转移微型器件，从而能避免采用暂时基板、转移胶材和凸点stamp。', 'CN202110030715.1', 1610294400, 'CN112864287A', 1622131200, 1622131200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 3, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 17, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 4, 0, 0, 0, 1, NULL, '916', NULL, NULL, NULL, 'CN101872815A | CN110311029A | CN110931608A | TW201528541A', NULL, '班章等: \"微型倒装AlGaInP发光二极管阵列器件的光电性能\", 《光学学报》', 1, '\\20220510\\905d64583cd548509e3b7fb2f64b36f3.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, NULL, 41447, 41449, 41448, 2);
INSERT INTO `os_patent` VALUES (23959, '显示面板及其制备方法、显示装置', '显示面板及其制备方法、显示装置', 'CN112885823A', '本发明提供一种显示面板及其制备方法、显示装置，所述显示面板包括驱动背板、多个LED芯片、阻挡层以及光转换层，多个所述LED芯片绑定于所述驱动背板上，且相邻所述LED芯片之间具有间隔，所述阻挡层设置于所述间隔内，且所述阻挡层的厚度大于所述LED芯片的厚度，以在对应所述LED芯片的位置形成开口，所述开口裸露出所述LED芯片，所述光转换层设置于所述开口内的LED芯片上。本发明通过把光转换层直接设置在LED芯片上，并在LED芯片之间的间隔内设置阻挡层，以缓解现有QD‑miniLED器件存在光串扰的问题。', '本发明提供一种显示面板及其制备方法、显示装置，所述显示面板包括驱动背板、多个LED芯片、阻挡层以及光转换层，多个所述LED芯片绑定于所述驱动背板上，且相邻所述LED芯片之间具有间隔，所述阻挡层设置于所述间隔内，且所述阻挡层的厚度大于所述LED芯片的厚度，以在对应所述LED芯片的位置形成开口，所述开口裸露出所述LED芯片，所述光转换层设置于所述开口内的LED芯片上。本发明通过把光转换层直接设置在LED芯片上，并在LED芯片之间的间隔内设置阻挡层，以缓解现有QD‑miniLED器件存在光串扰的问题。', 'CN202110060724.5', 1610899200, 'CN112885823A', 1622476800, 1622476800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\6cd4804e3559480495d965e1694f59cd.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41450, 41452, 41451, 1);
INSERT INTO `os_patent` VALUES (23960, '一种可卷曲柔性显示装置', '一种可卷曲柔性显示装置', 'CN112908175A', '本申请提供了一种可卷曲柔性显示装置，该可卷曲柔性显示装置包括卷轴、柔性显示模组、用于包裹卷轴和柔性显示模组的外壳，柔性显示模组沿着卷曲的方向上设置有腔体，腔体设置有多个可移动的刚性支撑件，刚性支撑件可随柔性显示模组卷曲或伸展；当柔性显示模组展开时，刚性支撑件填补腔体，并依次排列，刚性支撑件还连接有弹性件，在弹性件的弹性作用下，形成一定刚度的支撑体，保护柔性显示模组的边框；当柔性显示模组卷曲时，刚性支撑件随柔性显示模组卷曲到卷轴上时可进入外壳内，可提高可卷曲柔性显示装置的显示面板伸展后刚性，降低伸展和收缩时产生摩擦阻力。', '本申请提供了一种可卷曲柔性显示装置，该可卷曲柔性显示装置包括卷轴、柔性显示模组、用于包裹卷轴和柔性显示模组的外壳，柔性显示模组沿着卷曲的方向上设置有腔体，腔体设置有多个可移动的刚性支撑件，刚性支撑件可随柔性显示模组卷曲或伸展；当柔性显示模组展开时，刚性支撑件填补腔体，并依次排列，刚性支撑件还连接有弹性件，在弹性件的弹性作用下，形成一定刚度的支撑体，保护柔性显示模组的边框；当柔性显示模组卷曲时，刚性支撑件随柔性显示模组卷曲到卷轴上时可进入外壳内，可提高可卷曲柔性显示装置的显示面板伸展后刚性，降低伸展和收缩时产生摩擦阻力。', 'CN202110148531.5', 1612281600, 'CN112908175A', 1622736000, 1622736000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 7, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN107316566A | CN108399861A | CN109461385A | CN110209240A | CN110599913A | CN110853524A | CN205943347U', NULL, NULL, 1, '\\20220510\\8f1c8faf8a1b4564ac8be9744ed0f7d0.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41453, 41455, 41454, 1);
INSERT INTO `os_patent` VALUES (23961, '柔性显示模组', '柔性显示模组', 'CN112908180A', '本发明公开一种柔性显示模组，柔性显示模组具有弯曲区和与弯曲区相邻的平面区，柔性显示模组包括：柔性显示面板；保护盖板；以及透明胶层，透明胶层粘接柔性显示面板和保护盖板，且透明胶层对应弯曲区的至少一部分的存储模量小于透明胶层对应平面区的至少一部分的存储模量。通过使透明胶层对应弯曲区的至少一部分的存储模量小于透明胶层对应平面区的至少一部分的存储模量，减小透明胶层由于弯曲受回复力作用而与柔性显示面板之间界面处产生的切向拉应力，改善大曲率状态下的柔性显示面板的无机膜层产生裂纹以及膜层剥离的概率，保证了产品的可靠性。', '本发明公开一种柔性显示模组，柔性显示模组具有弯曲区和与弯曲区相邻的平面区，柔性显示模组包括：柔性显示面板；保护盖板；以及透明胶层，透明胶层粘接柔性显示面板和保护盖板，且透明胶层对应弯曲区的至少一部分的存储模量小于透明胶层对应平面区的至少一部分的存储模量。通过使透明胶层对应弯曲区的至少一部分的存储模量小于透明胶层对应平面区的至少一部分的存储模量，减小透明胶层由于弯曲受回复力作用而与柔性显示面板之间界面处产生的切向拉应力，改善大曲率状态下的柔性显示面板的无机膜层产生裂纹以及膜层剥离的概率，保证了产品的可靠性。', 'CN202110167859.1', 1612627200, 'CN112908180A', 1622736000, 1622736000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 8, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN106847084A | CN107216819A | CN107799011A | CN109473046A | CN110164315A | CN110570761A | CN111725280A | US20190025620A1', NULL, NULL, 1, '\\20220510\\0f083ba9d098442e836f12c35532e79f.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41456, 41458, 41457, 1);
INSERT INTO `os_patent` VALUES (23962, '像素驱动电路和显示面板', '像素驱动电路和显示面板', 'CN112908248A', '本申请提供了像素驱动电路和显示面板，像素驱动电路包括驱动模块、第一电压模块、发光模块和调节模块，发光模块的两端分别电性连接驱动模块和第一电压模块，发光模块包括微发光二极管，调节模块和发光模块串联连接；此方案中通过在发光模块的支路上串联调节模块，可以辅助减小微发光二极管两端的电压变化的最小值，使得微发光二极管对应的像素可以实现较多的灰阶级数，以丰富画面的色彩表现力和增加画面的色彩层次。', '本申请提供了像素驱动电路和显示面板，像素驱动电路包括驱动模块、第一电压模块、发光模块和调节模块，发光模块的两端分别电性连接驱动模块和第一电压模块，发光模块包括微发光二极管，调节模块和发光模块串联连接；此方案中通过在发光模块的支路上串联调节模块，可以辅助减小微发光二极管两端的电压变化的最小值，使得微发光二极管对应的像素可以实现较多的灰阶级数，以丰富画面的色彩表现力和增加画面的色彩层次。', 'CN202110229908.X', 1614614400, 'CN112908248A', 1622736000, 1622736000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 5, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN102568373A | CN107170400A | CN108648690A | CN109859693A | CN110992894A', NULL, NULL, 1, '\\20220510\\3e1def4378e64e5c83904d8613e31736.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41459, 41461, 41460, 1);
INSERT INTO `os_patent` VALUES (23963, '像素驱动电路及其驱动方法、显示面板', '像素驱动电路及其驱动方法、显示面板', 'CN112908261A', '本申请实施例公开一种像素驱动电路及其驱动方法、显示面板，所述像素驱动电路包括发光器件、驱动晶体管，第一重置晶体管及存储电容。驱动晶体管与发光器件串联于第一电压端和第二电压端之间；第一重置晶体管连接于驱动晶体管的栅极与驱动晶体管的源极或漏极中的一者之间；存储电容串联于数据电压端与第一重置晶体管的源极或漏极中的一者、驱动晶体管的栅极之间。通过第一重置晶体管及第一电压端重置驱动晶体管的栅极电压，通过第一重置晶体管及第二电压端将驱动晶体管的阈值电压传输至驱动晶体管的栅极，从而在驱动晶体管驱动发光器件发光时，降低驱动晶体管阈值电压对驱动电流的影响，保证发光器件发光的稳定性。', '本申请实施例公开一种像素驱动电路及其驱动方法、显示面板，所述像素驱动电路包括发光器件、驱动晶体管，第一重置晶体管及存储电容。驱动晶体管与发光器件串联于第一电压端和第二电压端之间；第一重置晶体管连接于驱动晶体管的栅极与驱动晶体管的源极或漏极中的一者之间；存储电容串联于数据电压端与第一重置晶体管的源极或漏极中的一者、驱动晶体管的栅极之间。通过第一重置晶体管及第一电压端重置驱动晶体管的栅极电压，通过第一重置晶体管及第二电压端将驱动晶体管的阈值电压传输至驱动晶体管的栅极，从而在驱动晶体管驱动发光器件发光时，降低驱动晶体管阈值电压对驱动电流的影响，保证发光器件发光的稳定性。', 'CN202110347648.6', 1617120000, 'CN112908261A', 1622736000, 1622736000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 21, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 7, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN102708791A | CN103700346A | CN104217677A | CN104658482A | CN104680980A | CN105427795A | US20060066532A1', NULL, NULL, 1, '\\20220510\\08d410accad44cc7842e8908094ee74a.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41462, 41464, 41463, 1);
INSERT INTO `os_patent` VALUES (23964, '像素电路及其驱动方法、显示面板和显示装置', '像素电路及其驱动方法、显示面板和显示装置', 'CN112927652A', '本申请提供了像素电路及其驱动方法、显示面板和显示装置，像素电路包括发光模块和驱动模块，驱动模块的第一端和发光模块电性连接，驱动模块的第一控制端在第一时段用于加载第一信号，驱动模块的第一控制端在第二时段用于加载第二信号，第一信号和第二信号极性相反，第一时段和第二时段无交集；此方案可以减缓驱动模块的阈值电压的漂移，以提高显示面板的寿命。', '本申请提供了像素电路及其驱动方法、显示面板和显示装置，像素电路包括发光模块和驱动模块，驱动模块的第一端和发光模块电性连接，驱动模块的第一控制端在第一时段用于加载第一信号，驱动模块的第一控制端在第二时段用于加载第二信号，第一信号和第二信号极性相反，第一时段和第二时段无交集；此方案可以减缓驱动模块的阈值电压的漂移，以提高显示面板的寿命。', 'CN202110160796.7', 1612454400, 'CN112927652A', 1623081600, 1623081600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 19, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 7, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN101520986A | CN110060635A | CN111429836A | CN111798789A | CN112150967A | CN1588517A | US20090184902A1', NULL, NULL, 1, '\\20220510\\fce3d14afe22412daefd4bd2e78e511f.png', NULL, NULL, 1, NULL, NULL, 15, NULL, NULL, NULL, 41465, 41467, 41466, 1);
INSERT INTO `os_patent` VALUES (23965, '显示面板及显示装置', '显示面板及显示装置', 'CN112928192A', '本申请实施例提供一种显示面板以及显示装置，所述显示面板包括：包括反射层的阵列基板以及连接于所述阵列基板的微发光二极管；其中，所述反射层位于所述微发光二极管的侧部，用于将所述微发光二极管发出的光朝向所述显示面板的显示面进行反射。本申请实施例能够在提高微发光二极管转移成功率的同时，进一步提高微发光二极管的发光效率。', '本申请实施例提供一种显示面板以及显示装置，所述显示面板包括：包括反射层的阵列基板以及连接于所述阵列基板的微发光二极管；其中，所述反射层位于所述微发光二极管的侧部，用于将所述微发光二极管发出的光朝向所述显示面板的显示面进行反射。本申请实施例能够在提高微发光二极管转移成功率的同时，进一步提高微发光二极管的发光效率。', 'CN202110181603.6', 1612800000, 'CN112928192A', 1623081600, 1623081600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 10, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN106782128A | CN106876552A | CN109037239A | CN110112141A | CN110890453A | CN111048502A | CN111710691A | CN111952331A | US20180090058A1 | US20200328332A1', NULL, NULL, 1, '\\20220510\\c4f68988388c4dc4acf81994b163df6e.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41468, 41470, 41469, 1);
INSERT INTO `os_patent` VALUES (23966, '显示装置', '显示装置', 'CN112951106A', '本申请提供一种显示装置，该显示装置包括显示面板以及微发光二极管显示模块，微发光二极管显示模块设置于显示面板的微发光二极管显示区内，微发光二极管显示模块中的相邻两个像素单元的其中之一具有一个与另一个像素单元内的子像素颜色不同的子像素，该子像素被该相邻两个像素单元共用，以此减少微发光二极管显示区内的子像素的数量，从而提高微发光二极管显示区的透过率，同时通过子像素渲染法驱动所述微发光二极管显示模块，以此增大被借用的子像素内的微发光二极管的驱动电流，来提高该微发光二极管的外量子效率，从而降低微发光二极管显示模块的功耗。', '本申请提供一种显示装置，该显示装置包括显示面板以及微发光二极管显示模块，微发光二极管显示模块设置于显示面板的微发光二极管显示区内，微发光二极管显示模块中的相邻两个像素单元的其中之一具有一个与另一个像素单元内的子像素颜色不同的子像素，该子像素被该相邻两个像素单元共用，以此减少微发光二极管显示区内的子像素的数量，从而提高微发光二极管显示区的透过率，同时通过子像素渲染法驱动所述微发光二极管显示模块，以此增大被借用的子像素内的微发光二极管的驱动电流，来提高该微发光二极管的外量子效率，从而降低微发光二极管显示模块的功耗。', 'CN202110219016.1', 1614268800, 'CN112951106A', 1623340800, 1623340800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 7, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN104821147A | CN105225612A | CN109036257A | CN110794604A | CN110828531A | CN205038916U | CN212276177U', NULL, NULL, 1, '\\20220510\\1f6d6c4291c842018e79a67ee3420aaf.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41471, 41473, 41472, 1);
INSERT INTO `os_patent` VALUES (23967, '像素驱动电路、显示面板及显示装置', '像素驱动电路、显示面板及显示装置', 'CN112951164A', '本发明公开一种像素驱动电路、显示面板及显示装置。像素驱动电路包括发光器件、驱动晶体管、第一重置晶体管、第一电容及第二电容。驱动晶体管与发光器件串联于第一电压端和第二电压端之间，第一重置晶体管连接于第一重置电压端与驱动晶体管的栅极之间，第一电容的第一端与驱动晶体管的栅极连接，第一电容的第二端与驱动晶体管的源极或漏极中的一者连接，第二电容的第一端与第一电容的第二端连接，第二电容的第二端与第二电压端连接。利用第一电压端、第二电压端及第一重置电压端将驱动晶体管的阈值电压通过第二电容耦合至第一电容，以在驱动晶体管驱动发光器件发光时，降低驱动晶体管的阈值电压对驱动电流的影响，保证发光器件发光的稳定性。', '本发明公开一种像素驱动电路、显示面板及显示装置。像素驱动电路包括发光器件、驱动晶体管、第一重置晶体管、第一电容及第二电容。驱动晶体管与发光器件串联于第一电压端和第二电压端之间，第一重置晶体管连接于第一重置电压端与驱动晶体管的栅极之间，第一电容的第一端与驱动晶体管的栅极连接，第一电容的第二端与驱动晶体管的源极或漏极中的一者连接，第二电容的第一端与第一电容的第二端连接，第二电容的第二端与第二电压端连接。利用第一电压端、第二电压端及第一重置电压端将驱动晶体管的阈值电压通过第二电容耦合至第一电容，以在驱动晶体管驱动发光器件发光时，降低驱动晶体管的阈值电压对驱动电流的影响，保证发光器件发光的稳定性。', 'CN202110347717.3', 1617120000, 'CN112951164A', 1623340800, 1623340800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 23, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 10, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN103489393A | CN104680980A | CN104700783A | CN104778925A | CN105096819A | CN111489682A | CN111951726A | CN112071275A | KR1020210130445A | TW201218165A', NULL, NULL, 1, '\\20220510\\1e180d134ca340c8a5a22c3c769182ad.png', NULL, NULL, 1, NULL, NULL, 15, NULL, NULL, NULL, 41474, 41476, 41475, 1);
INSERT INTO `os_patent` VALUES (23968, '微发光二极管显示面板及其制备方法、显示装置', '微发光二极管显示面板及其制备方法、显示装置', 'CN112993117A', '本发明提供一种微发光二极管显示面板及其制备方法、显示装置。所述微发光二极管显示面板包括微发光二极管绑定区、遮光区和外围走线区，所述微发光二极管显示面板还包括：衬底基板、位于所述衬底基板之上的第一金属层、位于所述第一金属层之上的层间绝缘层以及位于所述层间绝缘层之上的第二金属层；其中，所述第二金属层之上且对应于所述微发光二极管绑定区和所述外围走线区设置有用于降低所述第二金属层的反射率的减反层。本发明提供的减反层可以降低所述第二金属层对环境光的反射，提高微发光二极管显示面板的对比度，提升微发光二极管显示面板的显示品质。', '本发明提供一种微发光二极管显示面板及其制备方法、显示装置。所述微发光二极管显示面板包括微发光二极管绑定区、遮光区和外围走线区，所述微发光二极管显示面板还包括：衬底基板、位于所述衬底基板之上的第一金属层、位于所述第一金属层之上的层间绝缘层以及位于所述层间绝缘层之上的第二金属层；其中，所述第二金属层之上且对应于所述微发光二极管绑定区和所述外围走线区设置有用于降低所述第二金属层的反射率的减反层。本发明提供的减反层可以降低所述第二金属层对环境光的反射，提高微发光二极管显示面板的对比度，提升微发光二极管显示面板的显示品质。', 'CN202110177962.4', 1612800000, 'CN112993117A', 1623945600, 1623945600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 7, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN106057830A | CN109119452A | CN110910774A | CN111081766A | CN111524907A | CN1430455A | US20190004616A1', NULL, NULL, 1, '\\20220510\\edfbdae48ea945dd8b4f19fbf8d85958.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41477, 41479, 41478, 1);
INSERT INTO `os_patent` VALUES (23969, '显示面板和显示装置', '显示面板和显示装置', 'CN113013310A', '本发明提供一种显示面板和显示装置，该显示面板包括背光基板以及与所述背光基板相对设置的量子点彩膜基板，其中所述背光基板包括驱动背板、多个LED芯片、阻挡层以及控光构件，多个所述LED芯片绑定于所述驱动背板上，且相邻所述LED芯片之间具有间隔，所述阻挡层设置于所述间隔内，用于阻挡所述LED芯片的侧面出射光，所述控光构件设置于所述阻挡层以及所述LED芯片上。本发明通过设置控光构件来收敛LED芯片的出光角度，以缓解现有QD‑miniLED器件存在光串扰的问题。', '本发明提供一种显示面板和显示装置，该显示面板包括背光基板以及与所述背光基板相对设置的量子点彩膜基板，其中所述背光基板包括驱动背板、多个LED芯片、阻挡层以及控光构件，多个所述LED芯片绑定于所述驱动背板上，且相邻所述LED芯片之间具有间隔，所述阻挡层设置于所述间隔内，用于阻挡所述LED芯片的侧面出射光，所述控光构件设置于所述阻挡层以及所述LED芯片上。本发明通过设置控光构件来收敛LED芯片的出光角度，以缓解现有QD‑miniLED器件存在光串扰的问题。', 'CN202110193807.1', 1613750400, 'CN113013310A', 1624291200, 1624291200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 14, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 10, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN105425469A | CN107565003A | CN107591431A | CN109742112A | CN110620127A | CN110690243A | CN111063826A | CN111261656A | KR1020050005688A | US9576537B2', NULL, NULL, 1, '\\20220510\\b5ff982c85c7437f954acd14241e5c15.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41480, 41482, 41481, 1);
INSERT INTO `os_patent` VALUES (23970, '一种背光驱动电路及液晶显示装置', '一种背光驱动电路及液晶显示装置', 'CN113035139A', '本申请公开了一种背光驱动电路及液晶显示装置。本申请提供的背光驱动电路增加了一个第一晶体管和一个重置信号。通过扫描信号控制第二晶体管的通断，对存储电容充电，并通过重置信号控制第一晶体管的通断，对存储电容中的电荷进行释放。采用本申请的背光驱动电路能够实现背光逐行单独点亮，改善显示拖尾的问题。', '本申请公开了一种背光驱动电路及液晶显示装置。本申请提供的背光驱动电路增加了一个第一晶体管和一个重置信号。通过扫描信号控制第二晶体管的通断，对存储电容充电，并通过重置信号控制第一晶体管的通断，对存储电容中的电荷进行释放。采用本申请的背光驱动电路能够实现背光逐行单独点亮，改善显示拖尾的问题。', 'CN202110293542.2', 1616083200, 'CN113035139A', 1624550400, 1624550400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 9, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN101093639A | CN107978280A | CN108227287A | CN108694914A | CN109192150A | CN109785800A | CN111354319A | CN111580304A | CN112331151A', NULL, NULL, 1, '\\20220510\\2b58c0df44234fda98a5350c405a72a9.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41483, 41485, 41484, 1);
INSERT INTO `os_patent` VALUES (23971, '显示面板及其制作方法、显示装置', '显示面板及其制作方法、显示装置', 'CN113053254A', '本申请公开了一种显示面板及其制作方法、显示装置，所述显示面板包括一显示基板，所述显示基板具有第一显示区以及邻接所述第一显示区的第二显示区，所述第一显示区内设置有第一像素发光单元，所述第一像素发光单元包括多个阵列设置于所述显示基板上Micro LED晶粒，从而将小部分区域变为透明显示，以实现真正的全面屏显示；所述第二显示区内设置有不同于所述第一像素发光单元的第二像素发光单元，以降低成本，提升全面屏良率；其中，所述显示基板靠近所述第一显示区的侧面上设置有金属走线，所述金属走线用于将所述多个Micro LED晶粒与柔性电路板绑定，解决了全面屏制造时屏幕边界较大的问题，实现了极致窄边框。', '本申请公开了一种显示面板及其制作方法、显示装置，所述显示面板包括一显示基板，所述显示基板具有第一显示区以及邻接所述第一显示区的第二显示区，所述第一显示区内设置有第一像素发光单元，所述第一像素发光单元包括多个阵列设置于所述显示基板上Micro LED晶粒，从而将小部分区域变为透明显示，以实现真正的全面屏显示；所述第二显示区内设置有不同于所述第一像素发光单元的第二像素发光单元，以降低成本，提升全面屏良率；其中，所述显示基板靠近所述第一显示区的侧面上设置有金属走线，所述金属走线用于将所述多个Micro LED晶粒与柔性电路板绑定，解决了全面屏制造时屏幕边界较大的问题，实现了极致窄边框。', 'CN202110245859.9', 1614873600, 'CN113053254A', 1624896000, 1624896000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 22, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\8572ece704b14d44ab18f3fa733c8f35.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41486, 41488, 41487, 1);
INSERT INTO `os_patent` VALUES (23972, '一种Mini LED背光板的制作方法及Mini LED背光板', '一种Mini LED背光板的制作方法及Mini LED背光板', 'CN113053940A', '本申请实施例提供一种Mini LED背光板的制作方法及Mini LED背光板，包括如下步骤：提供基板，基板上划分有至少一个显示区，非显示区内划分有至少一个标记区，标记区上设置有金属标记物；在基板上罩上面罩，至少一个标记区裸露在外，采用亲水性材料在至少一个标记区上形成一层薄膜；移开面罩，在基板整个表面上涂布疏水性的钝化涂层。本申请实施例的制作方法中至少一个标记区上形成的亲水性薄膜可使疏水性的钝化涂层在涂布时难以成膜而将金属标记物露出，从而可以对曝光机准确定位，能够形成设定图案的钝化涂层；同时，基板的其他区域均可涂布钝化涂层，能够实现基板最大利用率，降低产品成本。', '本申请实施例提供一种Mini LED背光板的制作方法及Mini LED背光板，包括如下步骤：提供基板，基板上划分有至少一个显示区，非显示区内划分有至少一个标记区，标记区上设置有金属标记物；在基板上罩上面罩，至少一个标记区裸露在外，采用亲水性材料在至少一个标记区上形成一层薄膜；移开面罩，在基板整个表面上涂布疏水性的钝化涂层。本申请实施例的制作方法中至少一个标记区上形成的亲水性薄膜可使疏水性的钝化涂层在涂布时难以成膜而将金属标记物露出，从而可以对曝光机准确定位，能够形成设定图案的钝化涂层；同时，基板的其他区域均可涂布钝化涂层，能够实现基板最大利用率，降低产品成本。', 'CN202110231750.X', 1614614400, 'CN113053940A', 1624896000, 1624896000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 16, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\fcaa671f9b1c4d2782257c685afc18ed.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41489, 41491, 41490, 1);
INSERT INTO `os_patent` VALUES (23973, '一种ACF的贴合方法', '一种ACF的贴合方法', 'CN113054075A', '本申请提供一种ACF的贴合方法，提供微型发光二极管基板，所述微型发光二级管基板上阵列设有多个焊盘；获取ACF图案，所述ACF图案中阵列设置多个ACF单元；将所述ACF图案贴附至所述微型发光二级管基板上，多个所述ACF单元与多个所述焊盘一一对应，且每个所述ACF单元贴附在相应的所述焊盘上。所述获取ACF图案的步骤包括：提供ACF；提供冲切及吸附一体设备对所述ACF进行冲切获得所述ACF图案，其中，所述冲切及吸附一体设备包括刀头及吸嘴系统，所述刀头及吸嘴系统阵列设有多个冲切刀，多个所述冲切刀与多个所述ACF单元一一对应。本申请可以节约ACF材料、提高生产良率、降低生产成本，属于ACF贴合的技术领域。', '本申请提供一种ACF的贴合方法，提供微型发光二极管基板，所述微型发光二级管基板上阵列设有多个焊盘；获取ACF图案，所述ACF图案中阵列设置多个ACF单元；将所述ACF图案贴附至所述微型发光二级管基板上，多个所述ACF单元与多个所述焊盘一一对应，且每个所述ACF单元贴附在相应的所述焊盘上。所述获取ACF图案的步骤包括：提供ACF；提供冲切及吸附一体设备对所述ACF进行冲切获得所述ACF图案，其中，所述冲切及吸附一体设备包括刀头及吸嘴系统，所述刀头及吸嘴系统阵列设有多个冲切刀，多个所述冲切刀与多个所述ACF单元一一对应。本申请可以节约ACF材料、提高生产良率、降低生产成本，属于ACF贴合的技术领域。', 'CN202110258337.2', 1615219200, 'CN113054075A', 1624896000, 1624896000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 16, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 5, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN101504919A | CN101621045A | CN106229310A | CN111113904A | JP2003191521A', NULL, NULL, 1, '\\20220510\\1e262d921a774dfa88bfe66285ee79ec.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41492, 41494, 41493, 1);
INSERT INTO `os_patent` VALUES (23974, '微型发光二极管转移方法及显示面板制造方法', '微型发光二极管转移方法及显示面板制造方法', 'CN113054086A', '本申请实施例公开了一种微型发光二极管转移方法及显示面板制造方法，转移方法包括如下步骤：步骤S100：提供一承载基板和一阵列基板，承载基板上设有多个微型发光二极管，微型发光二极管包括绑定端子，相邻的微型发光二极管的绑定端子的中心之间具有第一预设距离，阵列基板上设有与绑定端子相应的多个焊接端子，相邻的焊接端子的中心之间具有第二预设距离，其中，第二预设距离为第一预设距离的n倍，n为正整数；步骤S200：转移微型发光二极管，将承载基板与阵列基板对向设置，将微型发光二极管的绑定端子与阵列基板上任一待绑定的焊接端子对接并固定，完成将微型发光二极管转移至阵列基板。本申请实施例可以极大的提升转移效率，减小资源消耗。', '本申请实施例公开了一种微型发光二极管转移方法及显示面板制造方法，转移方法包括如下步骤：步骤S100：提供一承载基板和一阵列基板，承载基板上设有多个微型发光二极管，微型发光二极管包括绑定端子，相邻的微型发光二极管的绑定端子的中心之间具有第一预设距离，阵列基板上设有与绑定端子相应的多个焊接端子，相邻的焊接端子的中心之间具有第二预设距离，其中，第二预设距离为第一预设距离的n倍，n为正整数；步骤S200：转移微型发光二极管，将承载基板与阵列基板对向设置，将微型发光二极管的绑定端子与阵列基板上任一待绑定的焊接端子对接并固定，完成将微型发光二极管转移至阵列基板。本申请实施例可以极大的提升转移效率，减小资源消耗。', 'CN202110266467.0', 1615392000, 'CN113054086A', 1624896000, 1624896000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 3, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN107808911A | CN109860092A | US10096740B1', NULL, NULL, 1, '\\20220510\\a02c7fb0d721414d80065df0cbc79683.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41495, 41497, 41496, 1);
INSERT INTO `os_patent` VALUES (23975, '微LED显示面板及其制备方法', '微LED显示面板及其制备方法', 'CN113066394A', '本申请实施例公开了一种微LED显示面板及其制备方法，微LED显示面板包括衬底基板、设置于衬底基板一侧的阵列层以及设置于阵列层远离衬底基板的一侧的焊盘；焊盘上设置有凹槽，焊盘远离阵列层的一侧设置有锡膏层，锡膏层的部分位于凹槽中；凹槽的顶侧开口在衬底基板上的正投影的面积，小于凹槽的底侧在衬底基板上的正投影的面积。通过在焊盘上设置凹槽并对凹槽的形状进行设计，使得在焊盘上形成锡膏层时锡膏层填充于凹槽中的部分卡嵌于凹槽中，从而可以增大锡膏层与焊盘的连接强度，防止锡膏层从焊盘上导致LED灯珠脱落。', '本申请实施例公开了一种微LED显示面板及其制备方法，微LED显示面板包括衬底基板、设置于衬底基板一侧的阵列层以及设置于阵列层远离衬底基板的一侧的焊盘；焊盘上设置有凹槽，焊盘远离阵列层的一侧设置有锡膏层，锡膏层的部分位于凹槽中；凹槽的顶侧开口在衬底基板上的正投影的面积，小于凹槽的底侧在衬底基板上的正投影的面积。通过在焊盘上设置凹槽并对凹槽的形状进行设计，使得在焊盘上形成锡膏层时锡膏层填充于凹槽中的部分卡嵌于凹槽中，从而可以增大锡膏层与焊盘的连接强度，防止锡膏层从焊盘上导致LED灯珠脱落。', 'CN202110240038.6', 1614787200, 'CN113066394A', 1625155200, 1625155200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 20, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 5, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN110416248A | CN110471219A | CN111063268A | CN111063823A | CN112309243A', NULL, NULL, 1, '\\20220510\\d1a166345c9544c3aa331f72ba21e128.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41498, 41500, 41499, 1);
INSERT INTO `os_patent` VALUES (23976, '拼接显示面板及显示装置', '拼接显示面板及显示装置', 'CN113075808A', '本申请实施例提供一种拼接显示面板以及显示装置，所述拼接显示面板包括：多个子显示面板，每一所述子显示面板包括多个邦定端子；及多个连接线；其中，每相邻的两所述子显示面板具有拼接位置，每一所述子显示面板的多个所述邦定端子靠近对应的所述拼接位置，每相邻的两所述子显示面板的位于同一所述拼接位置的相对两侧的多个所述邦定端子之间通过对应的多个所述连接线电性连接。本申请实施例减少了相邻两个子显示面板之间的拼缝宽度，进一步提高了显示装置的显示效果。', '本申请实施例提供一种拼接显示面板以及显示装置，所述拼接显示面板包括：多个子显示面板，每一所述子显示面板包括多个邦定端子；及多个连接线；其中，每相邻的两所述子显示面板具有拼接位置，每一所述子显示面板的多个所述邦定端子靠近对应的所述拼接位置，每相邻的两所述子显示面板的位于同一所述拼接位置的相对两侧的多个所述邦定端子之间通过对应的多个所述连接线电性连接。本申请实施例减少了相邻两个子显示面板之间的拼缝宽度，进一步提高了显示装置的显示效果。', 'CN202110286733.6', 1615910400, 'CN113075808A', 1625500800, 1625500800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 6, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN107742480A | CN111445807A | CN111583812A | CN111768716A | CN111951697A | US20200341333A1', NULL, NULL, 1, '\\20220510\\1be61dfd6b3c407bacf1b22a30cce98b.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41501, 41503, 41502, 1);
INSERT INTO `os_patent` VALUES (23977, '背光模组及显示装置', '背光模组及显示装置', 'CN113075818A', '本发明提供了一种背光模组及显示装置，包括衬底基板、间隔设置于衬底基板上的多个光源，以及设置于衬底基板远离光源一侧的散热层，其中散热层包括至少一个散热空腔，及填充于散热空腔内的散热液体，通过散热液体在液态和气态之间的转化吸收光源产生的热量，提高散热效率。', '本发明提供了一种背光模组及显示装置，包括衬底基板、间隔设置于衬底基板上的多个光源，以及设置于衬底基板远离光源一侧的散热层，其中散热层包括至少一个散热空腔，及填充于散热空腔内的散热液体，通过散热液体在液态和气态之间的转化吸收光源产生的热量，提高散热效率。', 'CN202110311514.9', 1616515200, 'CN113075818A', 1625500800, 1625500800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 5, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN104534421A | CN109343275A | CN201820758U | CN203165947U | TW201018372A', NULL, NULL, 1, '\\20220510\\61e5fc4a0eb9454a8a7bd1abafe573d6.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41504, 41506, 41505, 1);
INSERT INTO `os_patent` VALUES (23978, 'Mini LED背光模组的驱动方法、驱动电路及显示装置', 'Mini LED背光模组的驱动方法、驱动电路及显示装置', 'CN113077762A', '本申请提供一种mini LED背光模组的驱动方法、驱动电路及显示装置，该mini LED背光模组包括k个水平拼接的背光分区，该驱动方法在每帧显示时段内，依据预设时序每提供一个扫描信号扫描mini LED背光模组的一行发光元件时，就根据亮度信息依次错开向第1个至第k个背光分区输入数据信号，分别使第1个至第k个背光分区的该行发光元件同时工作，直至驱动mini LED背光模组中的全部发光元件进行工作，这样将mini LED背光模组中原本需要同时工作的每行发光元件拆分为多个背光分区的该行发光元件分别同时工作，避免了mini LED背光模组中的每行发光元件同时被点亮时带来的背光电流波动过大的问题。', '本申请提供一种mini LED背光模组的驱动方法、驱动电路及显示装置，该mini LED背光模组包括k个水平拼接的背光分区，该驱动方法在每帧显示时段内，依据预设时序每提供一个扫描信号扫描mini LED背光模组的一行发光元件时，就根据亮度信息依次错开向第1个至第k个背光分区输入数据信号，分别使第1个至第k个背光分区的该行发光元件同时工作，直至驱动mini LED背光模组中的全部发光元件进行工作，这样将mini LED背光模组中原本需要同时工作的每行发光元件拆分为多个背光分区的该行发光元件分别同时工作，避免了mini LED背光模组中的每行发光元件同时被点亮时带来的背光电流波动过大的问题。', 'CN202110284448.0', 1615910400, 'CN113077762A', 1625500800, 1625500800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 8, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN101082717A | CN101303839A | CN103686121A | CN103927944A | CN108923861A | CN109166532A | CN110033732A | CN111415628A', NULL, NULL, 1, '\\20220510\\dd8ef695c5534e138d07683c00abdacc.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41507, 41509, 41508, 1);
INSERT INTO `os_patent` VALUES (23979, '微发光二极管背板的返修设备及其返修方法', '微发光二极管背板的返修设备及其返修方法', 'CN113097363A', '本申请实施例公开了一种微发光二极管背板的返修设备及其返修方法，返修设备包括支撑部件和点印装置，支撑部件用于支撑目标背板，点印装置用于向目标背板的焊盘处施加锡膏；其中，点印装置包括间隔设置的两个点印探针。通过设置两个点印探针可一次性满足单个异常点的锡膏点印量，或者同时进行多个异常点的锡膏点印，从而提高返修设备的返修效率，另外在激光焊接过程中，保持吸头对LED芯片的吸附状态，可防止激光能量波段和锡膏变形导致的LED芯片偏移的现象发生，从而提高返修良率。', '本申请实施例公开了一种微发光二极管背板的返修设备及其返修方法，返修设备包括支撑部件和点印装置，支撑部件用于支撑目标背板，点印装置用于向目标背板的焊盘处施加锡膏；其中，点印装置包括间隔设置的两个点印探针。通过设置两个点印探针可一次性满足单个异常点的锡膏点印量，或者同时进行多个异常点的锡膏点印，从而提高返修设备的返修效率，另外在激光焊接过程中，保持吸头对LED芯片的吸附状态，可防止激光能量波段和锡膏变形导致的LED芯片偏移的现象发生，从而提高返修良率。', 'CN202110285401.6', 1615910400, 'CN113097363A', 1625760000, 1625760000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 11, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN104269367A | CN104701222A | CN106098575A | CN110379913A | CN110491795A | CN111785752A | CN201930902U | CN212034471U | JP2020004786A | US20040056078A1 | US6685080B1', NULL, NULL, 1, '\\20220510\\ae340f6bcfea41039d0287526cedad36.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41510, 41512, 41511, 1);
INSERT INTO `os_patent` VALUES (23980, 'QD-miniLED显示面板及其制备方法', 'QD-miniLED显示面板及其制备方法', 'CN113097367A', '本申请实施例公开了一种QD‑miniLED显示面板及其制备方法，QD‑mini LED显示面板包括第一衬底、以及多个独立位于第一衬底上的发光器件，部分发光器件还包括量子点色转换层；通过将量子点色转换层集成于发光器件上，缓解了QD‑miniLED显示面板蓝色背光容易出射到相邻像素的光串扰问题。', '本申请实施例公开了一种QD‑miniLED显示面板及其制备方法，QD‑mini LED显示面板包括第一衬底、以及多个独立位于第一衬底上的发光器件，部分发光器件还包括量子点色转换层；通过将量子点色转换层集成于发光器件上，缓解了QD‑miniLED显示面板蓝色背光容易出射到相邻像素的光串扰问题。', 'CN202110312281.4', 1616515200, 'CN113097367A', 1625760000, 1625760000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 17, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN102057511A | CN103779373A | CN104733593A | CN105390595A | CN105679196A | CN106299076A | CN106816519A | CN109155326A | CN110854153A | CN110875417A | CN111341939A | CN112186078A | CN112542479A | CN1481032A | CN210489618U | US20170278834A1 | US20200212101A1', NULL, NULL, 1, '\\20220510\\29d9f894ea5540d08f3c9255eaf70255.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41513, 41515, 41514, 1);
INSERT INTO `os_patent` VALUES (23981, '背光驱动电路、驱动方法及背光模组', '背光驱动电路、驱动方法及背光模组', 'CN113129844A', '本申请提供一种背光驱动电路、驱动方法及背光模组，涉及了显示技术领域，解决了目前的驱动TFT无法满足AM Mini‑LED的驱动需求的问题，包括发光器件和驱动模块，驱动模块包括开关器件和驱动器件，开关器件与发光器件连接，驱动器件与开关器件连接；开关器件包括开关MOS管，开关器件用于控制开关MOS管的工作电压满足预先设定的条件，在预先设定的条件下，开关MOS管工作在开关MOS管的线性区，开关MOS管的工作电压包括开关MOS管的阈值电压、栅极电压、栅‑源极节点电压和源‑漏极节点电压。本申请减小传统结构中驱动TFT的阈值电压的变化对发光器件亮度的影响，提升发光器件的发光均一性及发光器件的信赖性。', '本申请提供一种背光驱动电路、驱动方法及背光模组，涉及了显示技术领域，解决了目前的驱动TFT无法满足AM Mini‑LED的驱动需求的问题，包括发光器件和驱动模块，驱动模块包括开关器件和驱动器件，开关器件与发光器件连接，驱动器件与开关器件连接；开关器件包括开关MOS管，开关器件用于控制开关MOS管的工作电压满足预先设定的条件，在预先设定的条件下，开关MOS管工作在开关MOS管的线性区，开关MOS管的工作电压包括开关MOS管的阈值电压、栅极电压、栅‑源极节点电压和源‑漏极节点电压。本申请减小传统结构中驱动TFT的阈值电压的变化对发光器件亮度的影响，提升发光器件的发光均一性及发光器件的信赖性。', 'CN202110367196.8', 1617638400, 'CN113129844A', 1626364800, 1626364800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 16, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 8, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN101996580A | CN103415118A | CN109076676A | CN109410840A | CN111341272A | CN111580304A | CN207490899U | US20200043400A1', NULL, NULL, 1, '\\20220510\\56169e1fffa744d3b4e97a17c3c9a8b6.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, NULL, 41516, 41518, 41517, 1);
INSERT INTO `os_patent` VALUES (23982, '背光模组、车载显示面板及车辆', '背光模组、车载显示面板及车辆', 'CN113138497A', '本发明实施例公开一种背光模组、一种车载显示面板及一种车辆，所述背光模组包括：第一背光模组和第二背光模组。所述第一背光模组设有开口，所述第二背光模组安装于所述开口内。其中，所述第一背光模组与所述第二背光模组的类型不同，以使所述第一背光模组与所述第二背光模组可按照不同的背光控制类型实现单独发光，从而使所述第一背光模组与所述第二背光模组的其中一者出现故障时，利用所述第一背光模组与所述第二背光模组中的另一者使所述背光模组仍具有提供背光的功能，改善所述背光模组的容错性。', '本发明实施例公开一种背光模组、一种车载显示面板及一种车辆，所述背光模组包括：第一背光模组和第二背光模组。所述第一背光模组设有开口，所述第二背光模组安装于所述开口内。其中，所述第一背光模组与所述第二背光模组的类型不同，以使所述第一背光模组与所述第二背光模组可按照不同的背光控制类型实现单独发光，从而使所述第一背光模组与所述第二背光模组的其中一者出现故障时，利用所述第一背光模组与所述第二背光模组中的另一者使所述背光模组仍具有提供背光的功能，改善所述背光模组的容错性。', 'CN202110425171.9', 1618848000, 'CN113138497A', 1626710400, 1626710400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 18, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 9, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN101706075A | CN108761916A | CN204964950U | JP2012208451A | JP2012216327A | US20080117355A1 | US20110128722A1 | US20110235308A1 | US20120206321A1', NULL, NULL, 1, '\\20220510\\cb3230273f4c45518000d0a3b7b0cb5d.png', NULL, NULL, 1, NULL, NULL, 14, NULL, NULL, NULL, 41519, 41521, 41520, 1);
INSERT INTO `os_patent` VALUES (23983, '驱动电路及显示装置', '驱动电路及显示装置', 'CN113160730A', '本发明公开了一种驱动电路及显示装置，该驱动电路包括：电源控制模块和输出控制模块，电源控制模块的输出端与输出控制模块的输入端连接，输出控制模块包括第一电阻、第二电阻、第三电阻和开关控制单元，开关控制单元与第三电阻串联后与所述二电阻并联，然后再与第一电阻串联；当驱动电路处于第一状态时，开关控制单元断开，驱动电路输出电压Vout1；当驱动电路处于第二状态时，开关控制单元导通，驱动电路输出电压Vout2；Vout2的绝对值大于Vout1的绝对值。本发明提的驱动电路提高了点灯测试过程中的测试电压，使得mini LED灯板的细微损伤能够在点灯测试过程中及时暴露出来，有利于及时剔除残次品，提高出货品质，降低客诉或退货现象的发生。', '本发明公开了一种驱动电路及显示装置，该驱动电路包括：电源控制模块和输出控制模块，电源控制模块的输出端与输出控制模块的输入端连接，输出控制模块包括第一电阻、第二电阻、第三电阻和开关控制单元，开关控制单元与第三电阻串联后与所述二电阻并联，然后再与第一电阻串联；当驱动电路处于第一状态时，开关控制单元断开，驱动电路输出电压Vout1；当驱动电路处于第二状态时，开关控制单元导通，驱动电路输出电压Vout2；Vout2的绝对值大于Vout1的绝对值。本发明提的驱动电路提高了点灯测试过程中的测试电压，使得mini LED灯板的细微损伤能够在点灯测试过程中及时暴露出来，有利于及时剔除残次品，提高出货品质，降低客诉或退货现象的发生。', 'CN202110371943.5', 1617724800, 'CN113160730A', 1626969600, 1626969600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 7, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN107610666A | CN108231022A | CN109410807A | CN109410880A | CN109637404A | CN109727587A | CN210837105U', NULL, NULL, 1, '\\20220510\\66862cf1be3a43468c444e7d2777c592.png', NULL, NULL, 1, NULL, NULL, 14, NULL, NULL, NULL, 41522, 41524, 41523, 1);
INSERT INTO `os_patent` VALUES (23984, '一种微型发光二极管背光驱动组件和显示面板', '一种微型发光二极管背光驱动组件和显示面板', 'CN113176688A', '本申请实施例提供一种微型发光二极管背光驱动组件和显示面板，微型发光二极管背光驱动组件包括灯板、柔性电路板、集成电路板以及转接板。所述柔性电路板设置在所述灯板的一端端部，所述柔性电路板包括第一连接部、安装部以及第二连接部，所述安装部一端与所述第一连接部连接、另一端与所述第二连接部连接，所述第一连接部与所述灯板连接，集成电路板设置在所述安装部上，转接板与所述第二连接部远离所述灯板的一侧连接。由于本申请将集成电路板设置在柔性电路板上的安装部上，这样的结构有利于整机组装，降低显示面板厚度，优化背光驱动组件，同时也可节省背光驱动组件的成本。', '本申请实施例提供一种微型发光二极管背光驱动组件和显示面板，微型发光二极管背光驱动组件包括灯板、柔性电路板、集成电路板以及转接板。所述柔性电路板设置在所述灯板的一端端部，所述柔性电路板包括第一连接部、安装部以及第二连接部，所述安装部一端与所述第一连接部连接、另一端与所述第二连接部连接，所述第一连接部与所述灯板连接，集成电路板设置在所述安装部上，转接板与所述第二连接部远离所述灯板的一侧连接。由于本申请将集成电路板设置在柔性电路板上的安装部上，这样的结构有利于整机组装，降低显示面板厚度，优化背光驱动组件，同时也可节省背光驱动组件的成本。', 'CN202110452911.8', 1619366400, 'CN113176688A', 1627315200, 1627315200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 6, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN108681118A | CN110890393A | CN111583883A | CN112578587A | CN210899828U | WO2020145147A1', NULL, NULL, 1, '\\20220510\\547b47c373b74490af27af69e5914882.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41525, 41527, 41526, 1);
INSERT INTO `os_patent` VALUES (23985, '三维触控传感器及显示装置', '三维触控传感器及显示装置', 'CN113176837A', '本申请提供一种三维触控传感器及显示装置，该三维触控传感器通过在第一电极层设置错位分布且互相绝缘的压力感应电极和发射电极，以及在第二电极层设置压力接收电极，并将压力接收电极与压力感应电极对位设置而与发射电极错位设置，使得压力接收电极与发射电极之间形成第一电容，以及压力接收电极与压力感应电极之间形成第二电容，从而通过压力接收电极与发射电极之间形成的第一电容的变化来确定触控力的位置，而通过压力接收电极与压力感应电极之间形成的第二电容的变化来确定触控力的大小，由此分别通过第一电容的变化和第二电容的变化确定触控力的位置和大小，从而提高触控精度，使得显示装置能更好地支持多点触控。', '本申请提供一种三维触控传感器及显示装置，该三维触控传感器通过在第一电极层设置错位分布且互相绝缘的压力感应电极和发射电极，以及在第二电极层设置压力接收电极，并将压力接收电极与压力感应电极对位设置而与发射电极错位设置，使得压力接收电极与发射电极之间形成第一电容，以及压力接收电极与压力感应电极之间形成第二电容，从而通过压力接收电极与发射电极之间形成的第一电容的变化来确定触控力的位置，而通过压力接收电极与压力感应电极之间形成的第二电容的变化来确定触控力的大小，由此分别通过第一电容的变化和第二电容的变化确定触控力的位置和大小，从而提高触控精度，使得显示装置能更好地支持多点触控。', 'CN202110480566.9', 1619712000, 'CN113176837A', 1627315200, 1627315200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\779568c9f1ca4a68821bb0d932c88498.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41528, 41530, 41529, 1);
INSERT INTO `os_patent` VALUES (23986, '显示面板', '显示面板', 'CN113178529A', '本发明提供一种显示面板，该显示面板的黑色矩阵位于相邻彩色滤光色阻块的间隙内，且封装层、第一折射层的开口、第二折射层以及彩色滤光色阻块位于发光器件的出光路径上，第二折射层背向发光器件一侧形成有凹陷区，彩色滤光色阻块对应凹陷区形成有凸起部；光线由第一折射层射向第二折射层的折射角度变小，再由第二折射层射向彩色滤光色阻块的折射角度会变大，继而增加显示面板出光的角度，另外彩色滤光色阻块表面的凸起部的法线方向向发光器件的中心线靠拢，射向彩色滤光色阻块边缘的光线也会向发光器件的中心线偏移，避免边缘出射光被黑矩阵吸收情况，在保留正向视角亮度的同时，提升显示面板边缘侧视视角下出光亮度和视角。', '本发明提供一种显示面板，该显示面板的黑色矩阵位于相邻彩色滤光色阻块的间隙内，且封装层、第一折射层的开口、第二折射层以及彩色滤光色阻块位于发光器件的出光路径上，第二折射层背向发光器件一侧形成有凹陷区，彩色滤光色阻块对应凹陷区形成有凸起部；光线由第一折射层射向第二折射层的折射角度变小，再由第二折射层射向彩色滤光色阻块的折射角度会变大，继而增加显示面板出光的角度，另外彩色滤光色阻块表面的凸起部的法线方向向发光器件的中心线靠拢，射向彩色滤光色阻块边缘的光线也会向发光器件的中心线偏移，避免边缘出射光被黑矩阵吸收情况，在保留正向视角亮度的同时，提升显示面板边缘侧视视角下出光亮度和视角。', 'CN202110373848.9', 1617724800, 'CN113178529A', 1627315200, 1627315200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 3, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 6, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN101045788A | CN107123747A | CN110611040A | CN110649084A | US20200144550A1 | US20210005688A1', NULL, NULL, 1, '\\20220510\\98c5a90b001743329d61ce70cf084bc3.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41531, 41533, 41532, 2);
INSERT INTO `os_patent` VALUES (23987, '驱动背板及微发光二极管背板的制备方法', '驱动背板及微发光二极管背板的制备方法', 'CN113192971A', '本申请实施例公开一种驱动背板及微发光二极管背板的制备方法，驱动背板包括基板、设置于所述基板上的驱动层、设置于所述基板上的绑定焊盘，以及设置于所述绑定焊盘上的保护层，其中，所述保护层包括还原层，所述还原层用于防止所述绑定焊盘被氧化。通过在驱动背板的绑定焊盘上设置保护层，能防止驱动背板在转运过程中绑定焊盘表面出现杂物，或切割过程中对绑定焊盘造成损伤；保护层包括还原层，该还原层在受热分解过程中生成还原性产物，该还原性产物能与绑定焊盘被氧化的表面发生还原反应，进而防止绑定焊盘被氧化。', '本申请实施例公开一种驱动背板及微发光二极管背板的制备方法，驱动背板包括基板、设置于所述基板上的驱动层、设置于所述基板上的绑定焊盘，以及设置于所述绑定焊盘上的保护层，其中，所述保护层包括还原层，所述还原层用于防止所述绑定焊盘被氧化。通过在驱动背板的绑定焊盘上设置保护层，能防止驱动背板在转运过程中绑定焊盘表面出现杂物，或切割过程中对绑定焊盘造成损伤；保护层包括还原层，该还原层在受热分解过程中生成还原性产物，该还原性产物能与绑定焊盘被氧化的表面发生还原反应，进而防止绑定焊盘被氧化。', 'CN202110356499.X', 1617206400, 'CN113192971A', 1627574400, 1627574400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 5, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN101079429A | CN110429089A | US20140117070A1 | US20190067235A1 | US5480834A', NULL, NULL, 1, '\\20220510\\57ae7aba85494f9ebbfbb37f6621db4e.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41534, 41536, 41535, 1);
INSERT INTO `os_patent` VALUES (23988, '阵列基板及微型发光二极管显示面板', '阵列基板及微型发光二极管显示面板', 'CN113192973A', '本申请实施例公开了一种阵列基板及微型发光二极管显示面板，阵列基板包括用于布设微型发光二极管的第一区和围绕第一区的第二区，阵列基板包括：基底；设于基底上的阵列功能层，阵列功能层包括阵列设置的焊接端子，焊接端子用以与微型发光二极管电连接；设于阵列功能层上的保护层，保护层包括第一子保护层和第二子保护层，第二子保护层设于阵列功能层上，第一子保护层设于第二子保护层上；其中，第一子保护层为金属氧化物层，第二子保护层为无机材料层或有机材料层，保护层位于第一区的部位设有通孔以暴露出对应的焊接端子，可以提升阵列基板的抗刮伤能力，避免基板刮伤导致金属短路的问题。', '本申请实施例公开了一种阵列基板及微型发光二极管显示面板，阵列基板包括用于布设微型发光二极管的第一区和围绕第一区的第二区，阵列基板包括：基底；设于基底上的阵列功能层，阵列功能层包括阵列设置的焊接端子，焊接端子用以与微型发光二极管电连接；设于阵列功能层上的保护层，保护层包括第一子保护层和第二子保护层，第二子保护层设于阵列功能层上，第一子保护层设于第二子保护层上；其中，第一子保护层为金属氧化物层，第二子保护层为无机材料层或有机材料层，保护层位于第一区的部位设有通孔以暴露出对应的焊接端子，可以提升阵列基板的抗刮伤能力，避免基板刮伤导致金属短路的问题。', 'CN202110359403.5', 1617292800, 'CN113192973A', 1627574400, 1627574400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\c0abff6c304b4bab81222458a6817dbd.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41537, 41539, 41538, 1);
INSERT INTO `os_patent` VALUES (23989, '像素驱动电路、像素驱动方法及显示装置', '像素驱动电路、像素驱动方法及显示装置', 'CN113241036A', '本发明公开了一种像素驱动电路、像素驱动方法及显示装置，该像素驱动电路包括第一薄膜晶体管、第三薄膜晶体管、第四薄膜晶体管、第一电容、第二电容和发光二极管，第一薄膜晶体管的栅极、第四薄膜晶体管的第一极、第一电容的第一电极板和第二电容的第二电极板连接第一节点G，第一薄膜晶体管的第一极、第四薄膜晶体管的第二极连接第二节点D，第一薄膜晶体管的第二极、第一电容的第二电极板和发光二极管的正极连接第三节点S，第三薄膜晶体管的第二极连接第二电容的第一电极板，发光二极管的负极接入公共电信号。本发明同时实现了对阈值电压、讯号线压降以及LED均一性的补偿，提升了显示装置的稳定性。', '本发明公开了一种像素驱动电路、像素驱动方法及显示装置，该像素驱动电路包括第一薄膜晶体管、第三薄膜晶体管、第四薄膜晶体管、第一电容、第二电容和发光二极管，第一薄膜晶体管的栅极、第四薄膜晶体管的第一极、第一电容的第一电极板和第二电容的第二电极板连接第一节点G，第一薄膜晶体管的第一极、第四薄膜晶体管的第二极连接第二节点D，第一薄膜晶体管的第二极、第一电容的第二电极板和发光二极管的正极连接第三节点S，第三薄膜晶体管的第二极连接第二电容的第一电极板，发光二极管的负极接入公共电信号。本发明同时实现了对阈值电压、讯号线压降以及LED均一性的补偿，提升了显示装置的稳定性。', 'CN202110491871.8', 1620230400, 'CN113241036A', 1628524800, 1628524800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 7, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN106504701A | CN107301845A | CN207474026U | US20110164071A1 | US20110193850A1 | US20160210906A1 | WO2016150372A1', NULL, NULL, 1, '\\20220510\\f83ba1874b5145c9bf66536789dae5cc.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41540, 41542, 41541, 1);
INSERT INTO `os_patent` VALUES (23990, '背光驱动电路及其控制方法、显示面板、电子装置', '背光驱动电路及其控制方法、显示面板、电子装置', 'CN113257196A', '本发明实施例公开一种背光驱动电路及其控制方法、显示面板、电子装置，包括：发光单元、扫描控制单元和发光控制单元；发光单元电性连接于第一电源电压线和第二电源电压线之间；发光控制单元的输入端和输出端串联于发光单元、第一电源电压线和第二电源电压线组成的回路中；扫描控制单元包括第一晶体管和第二晶体管，第一晶体管和第二晶体管中的每个的输入端和输出端电性连接于数据线和发光控制单元的控制端之间，第一晶体管和第二晶体管中的每个的控制端电性连接于对应的扫描线以使得第一晶体管和第二晶体管交替导通；增加了扫描控制单元内的晶体管的数量，以使得各晶体管交替驱动发光控制单元发光，提高背光驱动电路的稳定性并延长其寿命。', '本发明实施例公开一种背光驱动电路及其控制方法、显示面板、电子装置，包括：发光单元、扫描控制单元和发光控制单元；发光单元电性连接于第一电源电压线和第二电源电压线之间；发光控制单元的输入端和输出端串联于发光单元、第一电源电压线和第二电源电压线组成的回路中；扫描控制单元包括第一晶体管和第二晶体管，第一晶体管和第二晶体管中的每个的输入端和输出端电性连接于数据线和发光控制单元的控制端之间，第一晶体管和第二晶体管中的每个的控制端电性连接于对应的扫描线以使得第一晶体管和第二晶体管交替导通；增加了扫描控制单元内的晶体管的数量，以使得各晶体管交替驱动发光控制单元发光，提高背光驱动电路的稳定性并延长其寿命。', 'CN202110529432.1', 1620921600, 'CN113257196A', 1628784000, 1628784000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 23, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 8, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN101449200A | CN101937647A | CN104299572A | CN104541320A | CN110520922A | US20060113918A1 | WO2015043266A1 | WO2015188471A1', NULL, NULL, 1, '\\20220510\\d3b79ac8cc74402fbcd0b28577664c7d.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41543, 41545, 41544, 1);
INSERT INTO `os_patent` VALUES (23991, 'Micro LED显示面板及其制备方法', 'Micro LED显示面板及其制备方法', 'CN113299746A', '本申请实施例公开了一种Micro LED显示面板和一种Micro LED显示面板制备方法，Micro LED显示面板包括衬底、同层且绝缘的设置在衬底上方的栅极、阳极、阴极，过第二栅绝缘层、层间绝缘层、平坦层设置有第一过孔，其中，阳极和阴极下沉到与栅极同层，第一过孔使阳极、阴极部分外露，在第一过孔内还设置有LED芯片量子点色转换层，量子点色转换层的厚度小于第一过孔的深度；通过将阳极、阴极设置得与栅极同层，增加了第一过孔的深度，使打印形成量子点转换层时墨滴较难溢出第一过孔，使得Micro LED显示面板的厚度不会因设置量子点色转换层而增加。', '本申请实施例公开了一种Micro LED显示面板和一种Micro LED显示面板制备方法，Micro LED显示面板包括衬底、同层且绝缘的设置在衬底上方的栅极、阳极、阴极，过第二栅绝缘层、层间绝缘层、平坦层设置有第一过孔，其中，阳极和阴极下沉到与栅极同层，第一过孔使阳极、阴极部分外露，在第一过孔内还设置有LED芯片量子点色转换层，量子点色转换层的厚度小于第一过孔的深度；通过将阳极、阴极设置得与栅极同层，增加了第一过孔的深度，使打印形成量子点转换层时墨滴较难溢出第一过孔，使得Micro LED显示面板的厚度不会因设置量子点色转换层而增加。', 'CN202110504551.1', 1620576000, 'CN113299746A', 1629734400, 1629734400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\f65272342e0642c781f017f72bb90c60.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41546, 41548, 41547, 1);
INSERT INTO `os_patent` VALUES (23992, '显示面板及显示面板的制备方法', '显示面板及显示面板的制备方法', 'CN113299846A', '本发明提供一种显示面板及显示面板的制备方法，该显示面板包括基底、位于基底上的发光器件层以及位于发光器件层上的封装层，封装层内设置有散热结构，散热结构包括散热膜层以及导热柱，导热柱一端与发光器件层表面接触，另一端延伸至散热膜层内，导热柱能够及时将发光器件层的热量传递到散热层上，大幅提高了封装层的散热能力，有利于延长显示面板寿命，改善显示面板出光效果。', '本发明提供一种显示面板及显示面板的制备方法，该显示面板包括基底、位于基底上的发光器件层以及位于发光器件层上的封装层，封装层内设置有散热结构，散热结构包括散热膜层以及导热柱，导热柱一端与发光器件层表面接触，另一端延伸至散热膜层内，导热柱能够及时将发光器件层的热量传递到散热层上，大幅提高了封装层的散热能力，有利于延长显示面板寿命，改善显示面板出光效果。', 'CN202110393304.9', 1618243200, 'CN113299846A', 1629734400, 1629734400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\a7d1b5fcdf5d4c3ba091e755b45efd52.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41549, 41551, 41550, 1);
INSERT INTO `os_patent` VALUES (23993, 'Mini-LED背光模组及显示装置', 'Mini-LED背光模组及显示装置', 'CN113327515A', '本申请公开了一种Mini‑LED背光模组及显示装置，所述Mini‑LED背光模组包括背板和铺设于所述背板上的灯板，所述灯板包括拼接设置的多块灯板单体，任意两块灯板单体之间存在有拼缝；所述背光模组还包括至少一聚光元件，所述聚光元件设置于所述灯板单体远离所述背板的一侧，且覆盖所述拼缝。所述聚光元件具有聚光的作用，设置于所述拼缝处可以增加光的利用率，提高所述拼缝处的亮度，改善所述灯板在所述拼缝处容易造成暗带的问题，提高显示效果。', '本申请公开了一种Mini‑LED背光模组及显示装置，所述Mini‑LED背光模组包括背板和铺设于所述背板上的灯板，所述灯板包括拼接设置的多块灯板单体，任意两块灯板单体之间存在有拼缝；所述背光模组还包括至少一聚光元件，所述聚光元件设置于所述灯板单体远离所述背板的一侧，且覆盖所述拼缝。所述聚光元件具有聚光的作用，设置于所述拼缝处可以增加光的利用率，提高所述拼缝处的亮度，改善所述灯板在所述拼缝处容易造成暗带的问题，提高显示效果。', 'CN202110577373.5', 1621958400, 'CN113327515A', 1630339200, 1630339200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 6, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN110349942A | CN110456552A | CN110703495A | CN112002217A | CN209591361U | CN212694219U', NULL, NULL, 1, '\\20220510\\a8196ac2b62840519b08f5d83d5299d6.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41552, 41554, 41553, 1);
INSERT INTO `os_patent` VALUES (23994, '驱动电路、显示面板及电子装置', '驱动电路、显示面板及电子装置', 'CN113327539A', '本发明实施例公开一种驱动电路、显示面板及电子装置。驱动电路包括电压输出模块、发光器件以及亮度调节模块。电压输出模块用于输出第一电压信号；发光器件电性连接于电压输出模块和第二电压端之间；亮度调节模块电性连接于发光器件和电压输出模块之间，亮度调节模块用于在发光阶段控制第一电压信号作用于发光器件的频率，以使发光器件在发光状态与不发光状态之间进行切换，可在发光器件在发光阶段原本就具有一定亮度的基础上，调节发光器件的平均亮度，提高发光器件的亮度可调级数。', '本发明实施例公开一种驱动电路、显示面板及电子装置。驱动电路包括电压输出模块、发光器件以及亮度调节模块。电压输出模块用于输出第一电压信号；发光器件电性连接于电压输出模块和第二电压端之间；亮度调节模块电性连接于发光器件和电压输出模块之间，亮度调节模块用于在发光阶段控制第一电压信号作用于发光器件的频率，以使发光器件在发光状态与不发光状态之间进行切换，可在发光器件在发光阶段原本就具有一定亮度的基础上，调节发光器件的平均亮度，提高发光器件的亮度可调级数。', 'CN202110544641.3', 1621353600, 'CN113327539A', 1630339200, 1630339200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 2, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN110675806A | CN110706652A', NULL, NULL, 1, '\\20220510\\5f2b5b66b4f844768d3e66a696053d54.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, NULL, 41555, 41557, 41556, 1);
INSERT INTO `os_patent` VALUES (23995, '液晶显示装置及其制备方法', '液晶显示装置及其制备方法', 'CN113328025A', '本申请公开了一种液晶显示装置及其制备方法，其中，所述液晶显示装置包括：LED芯片和散热结构，所述散热结构与所述LED芯片连接，所述散热结构包括液晶分子层，所述液晶分子层包括多个液晶分子，每一所述液晶分子具有多个长脂肪链，不同所述液晶分子的多个长脂肪链均朝同一方向排列设置。本实施例中不同液晶分子中的多个长脂肪链均朝同一方向排列设置，相比于不同液晶分子中的多个长脂肪链向不同方向排列，同一方向的排列的长脂肪链使得传递的热量更集中，进而提高了热量传递效率，改善了现有技术中Micro‑LED具有散热差的问题。', '本申请公开了一种液晶显示装置及其制备方法，其中，所述液晶显示装置包括：LED芯片和散热结构，所述散热结构与所述LED芯片连接，所述散热结构包括液晶分子层，所述液晶分子层包括多个液晶分子，每一所述液晶分子具有多个长脂肪链，不同所述液晶分子的多个长脂肪链均朝同一方向排列设置。本实施例中不同液晶分子中的多个长脂肪链均朝同一方向排列设置，相比于不同液晶分子中的多个长脂肪链向不同方向排列，同一方向的排列的长脂肪链使得传递的热量更集中，进而提高了热量传递效率，改善了现有技术中Micro‑LED具有散热差的问题。', 'CN202110578375.6', 1621958400, 'CN113328025A', 1630339200, 1630339200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 15, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\461325373208448994a451e3de54bb63.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41558, 41560, 41559, 1);
INSERT INTO `os_patent` VALUES (23996, '微型LED显示面板', '微型LED显示面板', 'CN113345879A', '本发明提供一种微型LED显示面板，该微型LED显示面板包括驱动电路层和位于驱动电路层之上的微型LED芯片，其中，微型LED芯片的引脚具有至少一非垂直面，驱动电路层表面的焊盘具有与非垂直面相配合的互补面，引脚与焊盘相互嵌套设置，非垂直面为凹陷的斜曲面，互补面为与凹陷的斜曲面相匹配的凸起的斜曲面，引脚与焊盘之间通过斜曲面完美匹配，这种设计可以增大微型LED芯片与驱动电路层表面的焊盘的接触面积，从而提高微型LED芯片可推拉力，确保微型LED芯片在微型LED显示面板翻转或倾斜时不会轻易脱离基板，间接提高微型Mini‑LED显示面板的显示的稳定性和显示品质。', '本发明提供一种微型LED显示面板，该微型LED显示面板包括驱动电路层和位于驱动电路层之上的微型LED芯片，其中，微型LED芯片的引脚具有至少一非垂直面，驱动电路层表面的焊盘具有与非垂直面相配合的互补面，引脚与焊盘相互嵌套设置，非垂直面为凹陷的斜曲面，互补面为与凹陷的斜曲面相匹配的凸起的斜曲面，引脚与焊盘之间通过斜曲面完美匹配，这种设计可以增大微型LED芯片与驱动电路层表面的焊盘的接触面积，从而提高微型LED芯片可推拉力，确保微型LED芯片在微型LED显示面板翻转或倾斜时不会轻易脱离基板，间接提高微型Mini‑LED显示面板的显示的稳定性和显示品质。', 'CN202110602265.9', 1622390400, 'CN113345879A', 1630598400, 1630598400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 9, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN101350336A | CN107945723A | CN107978582A | CN1457226A | US20050012191A1 | US20110215467A1 | US20120049350A1 | US20140084460A1 | US20160306213A1', NULL, NULL, 1, '\\20220510\\0580d2641b384d8c9cefe7d466a97d8f.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41561, 41563, 41562, 1);
INSERT INTO `os_patent` VALUES (23997, '屏下摄像头显示面板及透明显示区域的制备方法', '屏下摄像头显示面板及透明显示区域的制备方法', 'CN113345927A', '本发明提供一种屏下摄像头显示面板及透明显示区域的制备方法，该屏下摄像头显示面板的透明显示区域包括阵列设置的Micro LED像素；Micro LED像素包括衬底、设于衬底背侧的Micro LED驱动电路层、阵列设于Micro LED驱动电路层背侧的Micro LED芯片，Micro LED芯片的引脚位于Micro LED芯片的非出光面上，且引脚通过金属走线图案与驱动电路层电性连接；本发明中的Micro LED像素位于显示区域的内侧，确保了屏下摄像头显示面板的所有显示区的显示画面处于同一高度，避免Micro LED显示画面悬浮的问题，且每个Micro LED芯片避开出光面设置有引脚和金属走线图案，避免引脚影响Micro LED出光的面积和视角，从而提高了屏下摄像头显示面板的整个显示区的显示品质。', '本发明提供一种屏下摄像头显示面板及透明显示区域的制备方法，该屏下摄像头显示面板的透明显示区域包括阵列设置的Micro LED像素；Micro LED像素包括衬底、设于衬底背侧的Micro LED驱动电路层、阵列设于Micro LED驱动电路层背侧的Micro LED芯片，Micro LED芯片的引脚位于Micro LED芯片的非出光面上，且引脚通过金属走线图案与驱动电路层电性连接；本发明中的Micro LED像素位于显示区域的内侧，确保了屏下摄像头显示面板的所有显示区的显示画面处于同一高度，避免Micro LED显示画面悬浮的问题，且每个Micro LED芯片避开出光面设置有引脚和金属走线图案，避免引脚影响Micro LED出光的面积和视角，从而提高了屏下摄像头显示面板的整个显示区的显示品质。', 'CN202110602006.6', 1622390400, 'CN113345927A', 1630598400, 1630598400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\1996f8b272de417883b303463efb66f9.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41564, 41566, 41565, 1);
INSERT INTO `os_patent` VALUES (23998, '薄膜晶体管及LED背板', '薄膜晶体管及LED背板', 'CN113345967A', '本申请公开了一种薄膜晶体管及LED背板。薄膜晶体管包括：第一栅极、第一绝缘层、第一源极、半导体层、第一漏极、第二绝缘层和第二栅极，第一绝缘层覆盖第一栅极，第一源极、半导体层和第一漏极均设在第一绝缘层远离第一栅极的一侧，第二绝缘层覆盖在第一漏极、半导体层和第一源极上，第二栅极设在第二绝缘层远离第一栅极一侧的表面上，第一源极、半导体层和第一漏极共同形成垂直沟道结构。本申请薄膜晶体管拥有超高的开态电流和较低的漏电流，还能够调控阈值电压。', '本申请公开了一种薄膜晶体管及LED背板。薄膜晶体管包括：第一栅极、第一绝缘层、第一源极、半导体层、第一漏极、第二绝缘层和第二栅极，第一绝缘层覆盖第一栅极，第一源极、半导体层和第一漏极均设在第一绝缘层远离第一栅极的一侧，第二绝缘层覆盖在第一漏极、半导体层和第一源极上，第二栅极设在第二绝缘层远离第一栅极一侧的表面上，第一源极、半导体层和第一漏极共同形成垂直沟道结构。本申请薄膜晶体管拥有超高的开态电流和较低的漏电流，还能够调控阈值电压。', 'CN202110555450.7', 1621526400, 'CN113345967A', 1630598400, 1630598400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 16, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 6, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN107180876A | CN107195687A | CN108155246A | CN110534577A | US20160133754A1 | US20190131410A1', NULL, NULL, 1, '\\20220510\\8d00b742a242469b949c7c2dacad8412.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41567, 41569, 41568, 1);
INSERT INTO `os_patent` VALUES (23999, '一种量子点LED封装器件及其制备方法', '一种量子点LED封装器件及其制备方法', 'CN113345996A', '本发明涉及一种量子点LED封装器件及其制备方法。所述量子点LED封装器件包括：基板、支架、电路层、LED芯片、微透镜、滤光层以及消光层。在微透镜远离基板的一侧安装滤光层，进而降低蓝光强度，将蓝光降低到健康值；将滤光层远离基板的一侧的表面设置为粗糙面，实现均匀出光的效果；在滤光层中增加散射颗粒，用以增加穿过微透镜的光线的耦合程度，对穿过微透镜的光线进行散射均光；在滤光层的周围设置消光层，用以遮挡未能被量子点材料吸收的LED蓝光。', '本发明涉及一种量子点LED封装器件及其制备方法。所述量子点LED封装器件包括：基板、支架、电路层、LED芯片、微透镜、滤光层以及消光层。在微透镜远离基板的一侧安装滤光层，进而降低蓝光强度，将蓝光降低到健康值；将滤光层远离基板的一侧的表面设置为粗糙面，实现均匀出光的效果；在滤光层中增加散射颗粒，用以增加穿过微透镜的光线的耦合程度，对穿过微透镜的光线进行散射均光；在滤光层的周围设置消光层，用以遮挡未能被量子点材料吸收的LED蓝光。', 'CN202110580315.8', 1621958400, 'CN113345996A', 1630598400, 1630598400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\e90900479bb042d0b75f3e6d78bc3e1b.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41570, 41572, 41571, 1);
INSERT INTO `os_patent` VALUES (24000, '增亮膜及其制备方法、背光模组、显示装置', '增亮膜及其制备方法、背光模组、显示装置', 'CN113362702A', '本发明提供一种增亮膜及其制备方法、背光模组、显示装置。所述增亮膜包括基底以及设置于所述基底的一侧表面的色彩转换层，所述色彩转换层包括多个连续设置的聚光单元，任一所述聚光单元的纵截面宽度沿远离所述基底的一侧逐渐减小；其中，所述色彩转换层中设置有量子点材料。本发明通过将量子点材料设置在增亮膜中，不需要额外设置量子点膜，从而可以降低背光模组的厚度和成本，所述增亮膜中的色彩转换层，既可以将微发光二极管发出的光转换为白光，又可以起到增亮膜的聚光作用。', '本发明提供一种增亮膜及其制备方法、背光模组、显示装置。所述增亮膜包括基底以及设置于所述基底的一侧表面的色彩转换层，所述色彩转换层包括多个连续设置的聚光单元，任一所述聚光单元的纵截面宽度沿远离所述基底的一侧逐渐减小；其中，所述色彩转换层中设置有量子点材料。本发明通过将量子点材料设置在增亮膜中，不需要额外设置量子点膜，从而可以降低背光模组的厚度和成本，所述增亮膜中的色彩转换层，既可以将微发光二极管发出的光转换为白光，又可以起到增亮膜的聚光作用。', 'CN202110718902.9', 1624809600, 'CN113362702A', 1630944000, 1630944000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 6, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN105006509A | CN106199789A | CN106501888A | CN106501999A | CN109828407A | CN209055687U', NULL, NULL, 1, '\\20220510\\35fa33b938e247c3a52df207153ca559.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41573, 41575, 41574, 1);
INSERT INTO `os_patent` VALUES (24001, '发光器件、显示面板及其制备方法', '发光器件、显示面板及其制备方法', 'CN113363277A', '本申请实施例公开了一种发光器件、一种显示面板、一种显示面板制备方法，发光器件包括第一衬底、N型接触层、有源层、P型接触层，其中所述P型接触层上还设置有第一电极、以及围绕所述第一电极设置的第二电极，所述第二电极关于所述第一电极呈对称设置；通过将第二电极围绕所述第一电极设置，且第二电极上的任一点到所述第一电极的中心点的距离相等，将第二电极上的任一点与TFT器件的对应电极抵接对齐，就能完成miniLED的转移，降低了发光器件的巨量转移制程的难度。', '本申请实施例公开了一种发光器件、一种显示面板、一种显示面板制备方法，发光器件包括第一衬底、N型接触层、有源层、P型接触层，其中所述P型接触层上还设置有第一电极、以及围绕所述第一电极设置的第二电极，所述第二电极关于所述第一电极呈对称设置；通过将第二电极围绕所述第一电极设置，且第二电极上的任一点到所述第一电极的中心点的距离相等，将第二电极上的任一点与TFT器件的对应电极抵接对齐，就能完成miniLED的转移，降低了发光器件的巨量转移制程的难度。', 'CN202110602008.5', 1622390400, 'CN113363277A', 1630944000, 1630944000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\82b775bf357046769c5102fcb1b6f65e.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41576, 41578, 41577, 1);
INSERT INTO `os_patent` VALUES (24002, '显示面板、生物检测方法及显示装置', '显示面板、生物检测方法及显示装置', 'CN113376886A', '本发明提供一种显示面板、生物检测方法及显示装置。所述显示面板包括第一基板、与所述第一基板相对设置的第二基板、设置在所述第一基板面向所述第二基板的一侧的至少一光传感器以及与所述光传感器同侧并围绕所述光传感器设置的至少一生物检测光源，其中，所述光传感器用于接收所述生物检测光源发出的光经生物反射后的反射光。本发明通过在显示面板内设置光传感器和生物检测光源，当要检测生物时，控制生物检测光源开启，控制光传感器接收生物检测光源发出的光经生物反射后的反射光，从而实现生物检测功能，即为显示面板提供了生物检测功能的附加性能，提升了产品竞争力。', '本发明提供一种显示面板、生物检测方法及显示装置。所述显示面板包括第一基板、与所述第一基板相对设置的第二基板、设置在所述第一基板面向所述第二基板的一侧的至少一光传感器以及与所述光传感器同侧并围绕所述光传感器设置的至少一生物检测光源，其中，所述光传感器用于接收所述生物检测光源发出的光经生物反射后的反射光。本发明通过在显示面板内设置光传感器和生物检测光源，当要检测生物时，控制生物检测光源开启，控制光传感器接收生物检测光源发出的光经生物反射后的反射光，从而实现生物检测功能，即为显示面板提供了生物检测功能的附加性能，提升了产品竞争力。', 'CN202110734991.6', 1624982400, 'CN113376886A', 1631203200, 1631203200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\d7e37df6c96c4710bc80c49c38037860.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41579, 41581, 41580, 1);
INSERT INTO `os_patent` VALUES (24003, '拼接显示装置', '拼接显示装置', 'CN113393776A', '本发明提供一种拼接显示装置，所述拼接显示装置包括一基板、一网格支撑结构、多个拼接面板以及一控制单元，所述网格支撑结构设置在所述基板上，所述拼接面板排列设置在所述网格支撑结构上。通过在网格支撑结构上设置多个拼接面板，能够简化面板拼接的设计，并提高面板拼接的稳定性。', '本发明提供一种拼接显示装置，所述拼接显示装置包括一基板、一网格支撑结构、多个拼接面板以及一控制单元，所述网格支撑结构设置在所述基板上，所述拼接面板排列设置在所述网格支撑结构上。通过在网格支撑结构上设置多个拼接面板，能够简化面板拼接的设计，并提高面板拼接的稳定性。', 'CN202110701810.X', 1624464000, 'CN113393776A', 1631548800, 1631548800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 12, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\9d3b3cb456bb4489b58ff91bfe074d1e.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41582, 41584, 41583, 1);
INSERT INTO `os_patent` VALUES (24004, '像素驱动电路和背光显示器', '像素驱动电路和背光显示器', 'CN113421530A', '本发明涉及一种像素驱动电路及具有该像素驱动电路的背光显示器，所述像素驱动电路通过在第一薄膜晶体管T1和第二薄膜晶体管T2之间增设一个延迟电容C1，延缓背光LED灯组的开启时间，继而使得背光LED灯组的开启时长与液晶面板内液晶分子的偏转时长相一致，从而改善背光显示器的拖尾问题，提高显示品味。', '本发明涉及一种像素驱动电路及具有该像素驱动电路的背光显示器，所述像素驱动电路通过在第一薄膜晶体管T1和第二薄膜晶体管T2之间增设一个延迟电容C1，延缓背光LED灯组的开启时间，继而使得背光LED灯组的开启时长与液晶面板内液晶分子的偏转时长相一致，从而改善背光显示器的拖尾问题，提高显示品味。', 'CN202110631422.9', 1622995200, 'CN113421530A', 1632153600, 1632153600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 6, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 6, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN102237044A | CN102831863A | CN111354319A | CN111580304A | CN112448703A | US20030169247A1', NULL, NULL, 1, '\\20220510\\abc7861409db490b990fed3d6b02ac73.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 41585, 41587, 41586, 1);
INSERT INTO `os_patent` VALUES (24005, '银浆转印方法、Micro-LED移印方法及Micro-LED', '银浆转印方法、Micro-LED移印方法及Micro-LED', 'CN113427921A', '本申请实施例公开了一种银浆转印方法、微型发光二极管移印方法及微型发光二极管。银浆转印方法包括：S1，提供一基板及一与所述基板对应的膜片；膜片包括图案化镂空区；图案化镂空区位于膜片的边缘部位；基板包括至少一表面及至少一与所述表面垂直的侧面；S2，将膜片贴合在所述基板的表面上；S3，在膜片上形成金属膜层；S4，通过移印雕刻技术在基板的侧面上形成第一金属线路；S5，去除膜片则对应所述图案化镂空区处的金属保留，在基板边缘形成第二金属线路，第一金属线路与第二金属线路电连接。通过调整正面线路雕刻的方式，提升了银浆转印的效率，降低了工艺复杂度，同时也降低了Micro‑LED转移的工艺成本。', '本申请实施例公开了一种银浆转印方法、微型发光二极管移印方法及微型发光二极管。银浆转印方法包括：S1，提供一基板及一与所述基板对应的膜片；膜片包括图案化镂空区；图案化镂空区位于膜片的边缘部位；基板包括至少一表面及至少一与所述表面垂直的侧面；S2，将膜片贴合在所述基板的表面上；S3，在膜片上形成金属膜层；S4，通过移印雕刻技术在基板的侧面上形成第一金属线路；S5，去除膜片则对应所述图案化镂空区处的金属保留，在基板边缘形成第二金属线路，第一金属线路与第二金属线路电连接。通过调整正面线路雕刻的方式，提升了银浆转印的效率，降低了工艺复杂度，同时也降低了Micro‑LED转移的工艺成本。', 'CN202110607966.1', 1622476800, 'CN113427921A', 1632412800, 1632412800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 10, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN103135866A | CN103369851A | CN104711512A | CN106739402A | CN107227439A | CN107451520A | CN108447891A | CN112863370A | TW201023003A | US20030203101A1', NULL, NULL, 1, '\\20220510\\b600f172cf21484e93faa82e1d6dcc6a.png', NULL, NULL, 1, NULL, NULL, 11, NULL, NULL, NULL, 41588, 41590, 41589, 1);
INSERT INTO `os_patent` VALUES (24006, '液晶显示面板及显示装置', '液晶显示面板及显示装置', 'CN113433730A', '本发明涉及一种液晶显示面板及显示装置，所述液晶显示面板的彩膜基板上集成一个感测元件，背光模组发出的背光经由阵列基板射入彩膜基板后，所述感测元件可对入射的背光中的三原色的组成比例进行感测，判断背光中的白点是否发生偏移，继而方便后续校正，提升画面显示品质。', '本发明涉及一种液晶显示面板及显示装置，所述液晶显示面板的彩膜基板上集成一个感测元件，背光模组发出的背光经由阵列基板射入彩膜基板后，所述感测元件可对入射的背光中的三原色的组成比例进行感测，判断背光中的白点是否发生偏移，继而方便后续校正，提升画面显示品质。', 'CN202110705938.3', 1624464000, 'CN113433730A', 1632412800, 1632412800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 9, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN101281916A | CN101467490A | CN106935667A | CN110187800A | CN110718565A | CN112114700A | CN112670303A | CN1293521A | US20020024097A1', NULL, NULL, 1, '\\20220510\\41d7e84738414f7a89c68dd9a1e8ee4d.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 41591, 41593, 41592, 1);
INSERT INTO `os_patent` VALUES (24007, '阵列基板侧面走线制造方法及拼接显示面板', '阵列基板侧面走线制造方法及拼接显示面板', 'CN113437025A', '本申请实施例公开了一种阵列基板侧面走线制造方法及拼接显示面板，阵列基板侧面走线制造方法，包括如下步骤：步骤S100：提供一待处理基板，第一表面设置有第一连接端子，第二表面设置有第二连接端子；步骤S200：在第一表面形成第一保护层，第一保护层避开第一连接端子设置，在第二表面形成第二保护层，第二保护层避开第二连接端子设置；步骤S300：在待处理基板的侧面形成连接金属层；步骤S400：图案化处理连接金属层形成连接走线；步骤S500：在步骤S300或步骤S400后去除保护层。本申请实施例的阵列基板侧面走线制造方法工艺简单，成本较低，侧面走线与基板结合力强，侧面走线不易脱落。', '本申请实施例公开了一种阵列基板侧面走线制造方法及拼接显示面板，阵列基板侧面走线制造方法，包括如下步骤：步骤S100：提供一待处理基板，第一表面设置有第一连接端子，第二表面设置有第二连接端子；步骤S200：在第一表面形成第一保护层，第一保护层避开第一连接端子设置，在第二表面形成第二保护层，第二保护层避开第二连接端子设置；步骤S300：在待处理基板的侧面形成连接金属层；步骤S400：图案化处理连接金属层形成连接走线；步骤S500：在步骤S300或步骤S400后去除保护层。本申请实施例的阵列基板侧面走线制造方法工艺简单，成本较低，侧面走线与基板结合力强，侧面走线不易脱落。', 'CN202110648585.8', 1623254400, 'CN113437025A', 1632412800, 1632412800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 6, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN104181734A | CN110211973A | CN110911392A | CN111384067A | CN112014987A | CN112885236A', NULL, NULL, 1, '\\20220510\\51c8aab13c724eb49790f993770aeaed.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41594, 41596, 41595, 1);
INSERT INTO `os_patent` VALUES (24008, '面板及其制备方法', '面板及其制备方法', 'CN113437089A', '本申请实施例公开了一种显示面板及其制备方法,在显示面板中，所述薄膜晶体管层设置在所述基板上，所述第一导电层设置在所述薄膜晶体管层上，所述LED包括相对设置的第一端部和第二端部，所述第一端部设置在所述第一电极上，所述第二端部设置在所述第二电极上；所述第二导电层设置在所述LED上，所述第二导电层包括第一导电部和第二导电部，所述第一导电部电连接于所述第一端部和所述第一电极，所述第二导电部电连接于所述第二端部和所述第二电极。本申请实施例采用在薄膜晶体管层上设置LED的结构替换了现有技术中Mini‑LED面板和Micro‑LED面板，达到简化工艺的效果；另外上述的结构相较于单纯的电致发光显示面板具有更长的使用寿命。', '本申请实施例公开了一种显示面板及其制备方法,在显示面板中，所述薄膜晶体管层设置在所述基板上，所述第一导电层设置在所述薄膜晶体管层上，所述LED包括相对设置的第一端部和第二端部，所述第一端部设置在所述第一电极上，所述第二端部设置在所述第二电极上；所述第二导电层设置在所述LED上，所述第二导电层包括第一导电部和第二导电部，所述第一导电部电连接于所述第一端部和所述第一电极，所述第二导电部电连接于所述第二端部和所述第二电极。本申请实施例采用在薄膜晶体管层上设置LED的结构替换了现有技术中Mini‑LED面板和Micro‑LED面板，达到简化工艺的效果；另外上述的结构相较于单纯的电致发光显示面板具有更长的使用寿命。', 'CN202110646393.3', 1623254400, 'CN113437089A', 1632412800, 1632412800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 26, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\1fe6f5e99ca54aee9f04234d6c62decf.png', NULL, NULL, 2, NULL, NULL, 16, NULL, NULL, NULL, 41597, 41599, 41598, 1);
INSERT INTO `os_patent` VALUES (24009, '背光模组和显示装置', '背光模组和显示装置', 'CN113448123A', '本申请提供一种背光模组和显示装置；该背光模组包括沿第一方向拼接设置在背板上的多个灯板，灯板包括至少两个间隔设置的光源组，每个光源组包括至少两个沿第二方向设置的光源，沿第一方向搭接设置的多个用于反射光线的反射片，相邻反射片的搭接区位于同一灯板内相邻光源组之间，且相邻灯板的拼接区位于同一反射片的非搭接区内；本申请通过把相邻反射片的搭接区设置在非拼接区，使得搭接区的反射片凸起不会把过多的光线反射至拼接区而造成拼接区亮度不均，解决了现有显示产品的灯板拼接处存在亮度不均的问题。', '本申请提供一种背光模组和显示装置；该背光模组包括沿第一方向拼接设置在背板上的多个灯板，灯板包括至少两个间隔设置的光源组，每个光源组包括至少两个沿第二方向设置的光源，沿第一方向搭接设置的多个用于反射光线的反射片，相邻反射片的搭接区位于同一灯板内相邻光源组之间，且相邻灯板的拼接区位于同一反射片的非搭接区内；本申请通过把相邻反射片的搭接区设置在非拼接区，使得搭接区的反射片凸起不会把过多的光线反射至拼接区而造成拼接区亮度不均，解决了现有显示产品的灯板拼接处存在亮度不均的问题。', 'CN202110684767.0', 1624204800, 'CN113448123A', 1632758400, 1632758400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 3, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN110908188A | CN213399142U | JP1999084358A', NULL, NULL, 1, '\\20220510\\9b472967bb37492896abf6423253b74a.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41600, 41602, 41601, 1);
INSERT INTO `os_patent` VALUES (24010, '显示面板', '显示面板', 'CN113451382A', '本发明提供了一种显示面板，显示面板包括拼接设置的多个子显示面板，显示面板还包括多个显示区域和位于多个显示区域之间的拼接区域，多个子显示面板包括位于显示区域的第一子显示面板和位于拼接区域的第二子显示面板，其中，第二子显示面板包括micro LED或mini LED，通过利用设置在第一子显示面板外侧的micro LED或mini LED自封装的特性，以消除拼接显示面板显示画面中的黑线，从而实现屏接屏技术的“无缝化”，提高显示面板的显示品质。', '本发明提供了一种显示面板，显示面板包括拼接设置的多个子显示面板，显示面板还包括多个显示区域和位于多个显示区域之间的拼接区域，多个子显示面板包括位于显示区域的第一子显示面板和位于拼接区域的第二子显示面板，其中，第二子显示面板包括micro LED或mini LED，通过利用设置在第一子显示面板外侧的micro LED或mini LED自封装的特性，以消除拼接显示面板显示画面中的黑线，从而实现屏接屏技术的“无缝化”，提高显示面板的显示品质。', 'CN202110731234.3', 1624982400, 'CN113451382A', 1632758400, 1632758400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\430f2caefdb0472a8a477f8735dafec3.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41603, 41605, 41604, 1);
INSERT INTO `os_patent` VALUES (24011, '一种微型发光二极管拼接显示屏及其制备方法', '一种微型发光二极管拼接显示屏及其制备方法', 'CN113470538A', '本申请实施例公开了一种微型发光二极管拼接显示屏及其制备方法，包括：包括第一显示面板、第二显示面板及一控制板；所述第一显示面板包括第一绑定部，所述第一绑定部为凸出结构，该凸出结构包括一上接合面；所述第二显示面板包括第二绑定部，所述第二绑定部为缺省结构，该缺省结构包括一下接合面；第一引线，贴附在上接合面且与第一显示面板电连接；第二引线，贴附在下接合面且与第二显示面板电连接；控制板，分别电连接第一引线和第二引线。控制板集成控制第一显示面板及第二显示面板拼接显示。上述斜面拼接结构既提升了大尺寸拼接的接合处走线空间也提升了显示画面品质。', '本申请实施例公开了一种微型发光二极管拼接显示屏及其制备方法，包括：包括第一显示面板、第二显示面板及一控制板；所述第一显示面板包括第一绑定部，所述第一绑定部为凸出结构，该凸出结构包括一上接合面；所述第二显示面板包括第二绑定部，所述第二绑定部为缺省结构，该缺省结构包括一下接合面；第一引线，贴附在上接合面且与第一显示面板电连接；第二引线，贴附在下接合面且与第二显示面板电连接；控制板，分别电连接第一引线和第二引线。控制板集成控制第一显示面板及第二显示面板拼接显示。上述斜面拼接结构既提升了大尺寸拼接的接合处走线空间也提升了显示画面品质。', 'CN202110721340.3', 1624809600, 'CN113470538A', 1633017600, 1633017600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 1, 1, 1, 0, NULL, '916', NULL, NULL, NULL, NULL, 'CN113763837A', NULL, 1, '\\20220510\\5b3ae49ab2334985a5d18ca4b79b40c4.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41606, 41608, 41607, 1);
INSERT INTO `os_patent` VALUES (24012, '量子点彩膜基板及其制备方法、显示装置', '量子点彩膜基板及其制备方法、显示装置', 'CN113488496A', '本发明提供一种量子点彩膜基板及其制备方法、显示装置，该量子点彩膜基板的制备方法中首先形成具有上宽下窄的结构的R色阻块、G色阻块和B色阻块，然后在硅基板上形成量子点层，随后将量子点层的界面与色阻层的界面接触，在剥离硅基板的过程中，将至少与R色阻块和G色阻块接触部分量子点层转印至R色阻块和G色阻块表面上，以使R色阻块和G色阻块的窄顶面上形成量子点块，避免了喷墨打印技术的光刻胶的聚合物掺杂到量子点溶液中的情况，即避免现有制备技术中的光刻胶技术对量子点材料光效和信赖性的较大影响，因此本发明采用转印方法制备的量子块的出光效率和量子点材料利用率均较高。', '本发明提供一种量子点彩膜基板及其制备方法、显示装置，该量子点彩膜基板的制备方法中首先形成具有上宽下窄的结构的R色阻块、G色阻块和B色阻块，然后在硅基板上形成量子点层，随后将量子点层的界面与色阻层的界面接触，在剥离硅基板的过程中，将至少与R色阻块和G色阻块接触部分量子点层转印至R色阻块和G色阻块表面上，以使R色阻块和G色阻块的窄顶面上形成量子点块，避免了喷墨打印技术的光刻胶的聚合物掺杂到量子点溶液中的情况，即避免现有制备技术中的光刻胶技术对量子点材料光效和信赖性的较大影响，因此本发明采用转印方法制备的量子块的出光效率和量子点材料利用率均较高。', 'CN202110671663.6', 1623859200, 'CN113488496A', 1633622400, 1633622400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 21, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 2, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN110611035A | CN112863377A', NULL, NULL, 1, '\\20220510\\775c352972c641c1a572ae0434c1b2f9.png', NULL, NULL, 1, NULL, NULL, 13, NULL, NULL, NULL, 41609, 41611, 41610, 1);
INSERT INTO `os_patent` VALUES (24013, '柔性显示装置', '柔性显示装置', 'CN113506515A', '本发明提供了一种柔性显示装置，包括：柔性显示面板，柔性显示面板具有显示屏和底部；耐弯折结构，耐弯折结构贴合在底部，耐弯折结构上设有制备成凹凸形状的咬合结构，通过在耐弯折结构上设有制备成凹凸形状的咬合结构，以改善柔性显示装置无法精准的局部定位的问题，从而提高柔性显示装置的外观效果。', '本发明提供了一种柔性显示装置，包括：柔性显示面板，柔性显示面板具有显示屏和底部；耐弯折结构，耐弯折结构贴合在底部，耐弯折结构上设有制备成凹凸形状的咬合结构，通过在耐弯折结构上设有制备成凹凸形状的咬合结构，以改善柔性显示装置无法精准的局部定位的问题，从而提高柔性显示装置的外观效果。', 'CN202110796511.9', 1626192000, 'CN113506515A', 1634227200, 1634227200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 5, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN101685581A | CN104732890A | CN109872639A | CN212873896U | KR1020140101124A', NULL, NULL, 1, '\\20220510\\8b9c85f26b634921bf42582c3bd399b5.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41612, 41614, 41613, 1);
INSERT INTO `os_patent` VALUES (24014, '拼接显示装置及拼接显示装置的组装方法', '拼接显示装置及拼接显示装置的组装方法', 'CN113516922A', '本申请公开了一种拼接显示装置及拼接显示装置的组装方法，所述拼接显示装置包括背板、至少一第一显示模组以及至少一第二显示模组，所述第一显示模组设置于所述背板上，所述第一显示模组具有第一拼接面；所述第二显示模组设置于所述背板上，且与所述第一显示模组拼接设置，所述第二显示模组具有第二拼接面，所述第二拼接面与第一拼接面相对设置；所述第一拼接面于所述背板所在平面的正投影与所述第二拼接面于所述背板所在平面的正投影至少部分重叠。本申请提高了Micro LED拼接屏的视觉品味。', '本申请公开了一种拼接显示装置及拼接显示装置的组装方法，所述拼接显示装置包括背板、至少一第一显示模组以及至少一第二显示模组，所述第一显示模组设置于所述背板上，所述第一显示模组具有第一拼接面；所述第二显示模组设置于所述背板上，且与所述第一显示模组拼接设置，所述第二显示模组具有第二拼接面，所述第二拼接面与第一拼接面相对设置；所述第一拼接面于所述背板所在平面的正投影与所述第二拼接面于所述背板所在平面的正投影至少部分重叠。本申请提高了Micro LED拼接屏的视觉品味。', 'CN202110849479.6', 1627315200, 'CN113516922A', 1634572800, 1634572800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 18, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\a7c9624dd18d421fb405b0fc35fc9214.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41615, 41617, 41616, 1);
INSERT INTO `os_patent` VALUES (24015, '3D显示系统及其显示方法', '3D显示系统及其显示方法', 'CN113534488A', '本发明提供一种3D显示系统及其显示方法。3D显示系统包括显示装置和3D眼镜，显示装置包括均匀分布的多个第一微发光二极管、多个第二微发光二极管以及多个第三微发光二极管；3D眼镜包括第一镜片和第二镜片，第一镜片的颜色与第一微发光二极管的出光颜色一致；其中，第一微发光二极管与第二微发光二极管交替工作，当第二镜片的颜色与第二微发光二极管的出光颜色一致时，第三微发光二极管不工作，当第二镜片的颜色与第二微发光二极管和第三微发光二极管的混合出光颜色一致时，第三微发光二极管与第二微发光二极管同时工作。本发明在不降低显示屏分辨率的基础上实现色差式3D和快门式3D的结合使用，提高用户的3D体验效果。', '本发明提供一种3D显示系统及其显示方法。3D显示系统包括显示装置和3D眼镜，显示装置包括均匀分布的多个第一微发光二极管、多个第二微发光二极管以及多个第三微发光二极管；3D眼镜包括第一镜片和第二镜片，第一镜片的颜色与第一微发光二极管的出光颜色一致；其中，第一微发光二极管与第二微发光二极管交替工作，当第二镜片的颜色与第二微发光二极管的出光颜色一致时，第三微发光二极管不工作，当第二镜片的颜色与第二微发光二极管和第三微发光二极管的混合出光颜色一致时，第三微发光二极管与第二微发光二极管同时工作。本发明在不降低显示屏分辨率的基础上实现色差式3D和快门式3D的结合使用，提高用户的3D体验效果。', 'CN202110799554.2', 1626278400, 'CN113534488A', 1634832000, 1634832000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 3, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN101852920A | CN102685538A | CN104534358A', NULL, NULL, 1, '\\20220510\\df2b92d8151a4759a59745e36293e8e4.png', NULL, NULL, 1, NULL, NULL, 11, NULL, NULL, NULL, 41618, 41620, 41619, 1);
INSERT INTO `os_patent` VALUES (24016, '背光模组及其制备方法、显示装置', '背光模组及其制备方法、显示装置', 'CN113534536A', '本发明提供一种背光模组及其制备方法、显示装置。所述背光模组包括基板、位于所述基板的一侧表面的介质层、位于所述介质层远离所述基板的一侧表面的棱镜层、位于所述棱镜层远离所述介质层的一侧表面的第一扩散层、位于所述第一扩散层远离所述棱镜层的一侧表面且阵列分布的多个发光二极管组件以及位于所述多个发光二极管组件远离所述第一扩散层的一侧的反射层；其中，所述介质层远离所述基板的一侧表面形成有棱镜结构，所述棱镜层覆盖所述棱镜结构。本发明通过将介质层、棱镜层、第一扩散层、多个发光二极管组件以及反射层均集成在一张基板上，简化了背光模组的组装工序，可使得背光模组的厚度得以减薄，实现薄型化和轻量化。', '本发明提供一种背光模组及其制备方法、显示装置。所述背光模组包括基板、位于所述基板的一侧表面的介质层、位于所述介质层远离所述基板的一侧表面的棱镜层、位于所述棱镜层远离所述介质层的一侧表面的第一扩散层、位于所述第一扩散层远离所述棱镜层的一侧表面且阵列分布的多个发光二极管组件以及位于所述多个发光二极管组件远离所述第一扩散层的一侧的反射层；其中，所述介质层远离所述基板的一侧表面形成有棱镜结构，所述棱镜层覆盖所述棱镜结构。本发明通过将介质层、棱镜层、第一扩散层、多个发光二极管组件以及反射层均集成在一张基板上，简化了背光模组的组装工序，可使得背光模组的厚度得以减薄，实现薄型化和轻量化。', 'CN202110793124.X', 1626192000, 'CN113534536A', 1634832000, 1634832000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 9, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN101339262A | CN103744229A | CN103968300A | CN104712958A | CN111708220A | CN203336480U | CN204422930U | CN211786511U | US20060197888A1', NULL, NULL, 1, '\\20220510\\7e1d6e7214a54678ae6392c0915c1e14.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41621, 41623, 41622, 1);
INSERT INTO `os_patent` VALUES (24017, '显示面板及其制备方法、三维显示设备', '显示面板及其制备方法、三维显示设备', 'CN113534555A', '本发明提供了一种显示面板及其制备方法、三维显示设备。所述显示面板包括叠层设置的背光模组和液晶层，所述液晶层中填充有胆甾相液晶和量子点材料。所述显示面板通过胆甾相液晶和量子点材料将所显示的图像通过不同方向的圆偏振光形成的两组显示画面，去除了现有技术中的偏光调制器件，简化了3D显示面板的结构。', '本发明提供了一种显示面板及其制备方法、三维显示设备。所述显示面板包括叠层设置的背光模组和液晶层，所述液晶层中填充有胆甾相液晶和量子点材料。所述显示面板通过胆甾相液晶和量子点材料将所显示的图像通过不同方向的圆偏振光形成的两组显示画面，去除了现有技术中的偏光调制器件，简化了3D显示面板的结构。', 'CN202110821001.2', 1626710400, 'CN113534555A', 1634832000, 1634832000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\85b1cc5e0fd348659abd94be3d1ab926.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41624, 41626, 41625, 1);
INSERT INTO `os_patent` VALUES (24018, '柔性显示面板及柔性显示装置', '柔性显示面板及柔性显示装置', 'CN113570967A', '一种柔性显示面板及柔性显示装置，其中柔性显示面板包括基板、散热复合材以及挺性金属层，散热复合材设置在所述基板上，所述散热复合材包括撕膜侧及邻接所述撕膜侧的吸附侧。所述散热复合材包括依序层迭设置的网格胶、泡棉、聚酰亚胺及铜箔。挺性金属层设置在所述散热复合材远离所述基板的一侧面上，所述挺性金属层在所述基板上的投影面积大于或等于所述撕膜侧在所述基板上的投影面积，增加散热复合材整体的挺性，降低抛料报废，提升了生产设备效率。', '一种柔性显示面板及柔性显示装置，其中柔性显示面板包括基板、散热复合材以及挺性金属层，散热复合材设置在所述基板上，所述散热复合材包括撕膜侧及邻接所述撕膜侧的吸附侧。所述散热复合材包括依序层迭设置的网格胶、泡棉、聚酰亚胺及铜箔。挺性金属层设置在所述散热复合材远离所述基板的一侧面上，所述挺性金属层在所述基板上的投影面积大于或等于所述撕膜侧在所述基板上的投影面积，增加散热复合材整体的挺性，降低抛料报废，提升了生产设备效率。', 'CN202110772514.9', 1625673600, 'CN113570967A', 1635436800, 1635436800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\a6d6ad965b5d4d8895365dd6072aa208.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41627, 41629, 41628, 1);
INSERT INTO `os_patent` VALUES (24019, '微发光二极管显示面板及其制备方法、显示装置', '微发光二极管显示面板及其制备方法、显示装置', 'CN113571543A', '本发明提供一种微发光二极管显示面板及其制备方法、显示装置。所述微发光二极管显示面板包括衬底基板、第一金属层、钝化层以及第二金属层；第一金属层包括源极、漏极以及电源线；钝化层包括位于源极之上的第一过孔和位于电源线之上的第二过孔；第二金属层包括第一绑定电极和第二绑定电极，第一绑定电极通过第一过孔与源极电连接，第二绑定电极通过第二过孔与电源线电连接；其中，第一过孔和第二过孔内均设置有支撑柱。本发明通过设置支撑柱增加第一绑定电极、第二绑定电极的高度，当进行转移制程时，机台仅与位于第一绑定电极、第二绑定电极之上的异方性导电胶膜接触，避免面内其他位置发生热压短路，从而提高微发光二极管芯片的转移良率。', '本发明提供一种微发光二极管显示面板及其制备方法、显示装置。所述微发光二极管显示面板包括衬底基板、第一金属层、钝化层以及第二金属层；第一金属层包括源极、漏极以及电源线；钝化层包括位于源极之上的第一过孔和位于电源线之上的第二过孔；第二金属层包括第一绑定电极和第二绑定电极，第一绑定电极通过第一过孔与源极电连接，第二绑定电极通过第二过孔与电源线电连接；其中，第一过孔和第二过孔内均设置有支撑柱。本发明通过设置支撑柱增加第一绑定电极、第二绑定电极的高度，当进行转移制程时，机台仅与位于第一绑定电极、第二绑定电极之上的异方性导电胶膜接触，避免面内其他位置发生热压短路，从而提高微发光二极管芯片的转移良率。', 'CN202110797246.6', 1626192000, 'CN113571543A', 1635436800, 1635436800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 2, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN112599651A | WO2021108951A1', NULL, NULL, 1, '\\20220510\\e897583a0d1c4e1fa88a6b2c1ae4e159.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41630, 41632, 41631, 1);
INSERT INTO `os_patent` VALUES (24020, '一种透明液晶显示器', '一种透明液晶显示器', 'CN113589591A', '本申请公开了一种透明液晶显示器。该透明液晶显示器包括背光面板、设置于所述背光面上的透明光学胶层以及设置于所述透明光学胶层上的液晶面板；其中，所述液晶面板包括多个像素单元以及位于所述像素单元之间的透光区；所述背光面板包括背光阵列基板、设置于所述背光阵列基板上的挡墙阵列以及多个发光单元，其中所述挡墙阵列设置有多个对应于所述多个像素单元及所述透光区的开孔，对应于所述多个像素单元的所述开孔中设置至少一个所述发光单元以及覆盖所述发光单元的扩散层。本发明在透明液晶显示器不通电时呈现非透明状态，在透明液晶显示器通电时呈现透明状态，符合商场/门店玻璃橱窗和玻璃墙壁多种透明显示器应用场景。', '本申请公开了一种透明液晶显示器。该透明液晶显示器包括背光面板、设置于所述背光面上的透明光学胶层以及设置于所述透明光学胶层上的液晶面板；其中，所述液晶面板包括多个像素单元以及位于所述像素单元之间的透光区；所述背光面板包括背光阵列基板、设置于所述背光阵列基板上的挡墙阵列以及多个发光单元，其中所述挡墙阵列设置有多个对应于所述多个像素单元及所述透光区的开孔，对应于所述多个像素单元的所述开孔中设置至少一个所述发光单元以及覆盖所述发光单元的扩散层。本发明在透明液晶显示器不通电时呈现非透明状态，在透明液晶显示器通电时呈现透明状态，符合商场/门店玻璃橱窗和玻璃墙壁多种透明显示器应用场景。', 'CN202110823515.1', 1626796800, 'CN113589591A', 1635782400, 1635782400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 21, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\d46ba2b3ed194d66a650666cfd0a5c17.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41633, 41635, 41634, 1);
INSERT INTO `os_patent` VALUES (24021, '拼接显示面板及显示装置', '拼接显示面板及显示装置', 'CN113593424A', '本申请公开了一种拼接显示面板及显示装置，所述拼接显示面板通过在相邻的两个子显示面板的拼接位置设置多条连接引线，所述连接引线用来将其中一子显示面板的驱动信号传输至另一子显示面板，省略拼接处的COF，能降低了驱动成本，还实现真正的无缝拼接，同时还解决了由于信号不同步导致的显示问题。', '本申请公开了一种拼接显示面板及显示装置，所述拼接显示面板通过在相邻的两个子显示面板的拼接位置设置多条连接引线，所述连接引线用来将其中一子显示面板的驱动信号传输至另一子显示面板，省略拼接处的COF，能降低了驱动成本，还实现真正的无缝拼接，同时还解决了由于信号不同步导致的显示问题。', 'CN202110869487.7', 1627574400, 'CN113593424A', 1635782400, 1635782400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\9c26118c83c941a5a301e6f2123350cc.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41636, 41638, 41637, 1);
INSERT INTO `os_patent` VALUES (24022, '一种拼接箱及拼接显示屏', '一种拼接箱及拼接显示屏', 'CN113597149A', '本发明涉及一种拼接箱及拼接显示屏。多个箱体拼接组装的过程中，当某一个箱体的第二表面和其他箱体的第二表面存在高度差时，调节该箱体处的第一调节件，将箱体顶起或放下，从而调节该箱体的第二表面的高度，进而使得该箱体的第二表面与其他箱体的第二表面处于同一平面，进而使得位于箱体的第二表面上的显示单元处于同一平面，由此能够在较小的面积下使得屏幕分辨率得以提高，保证画面的质感，满足用户近距离观看的需求。', '本发明涉及一种拼接箱及拼接显示屏。多个箱体拼接组装的过程中，当某一个箱体的第二表面和其他箱体的第二表面存在高度差时，调节该箱体处的第一调节件，将箱体顶起或放下，从而调节该箱体的第二表面的高度，进而使得该箱体的第二表面与其他箱体的第二表面处于同一平面，进而使得位于箱体的第二表面上的显示单元处于同一平面，由此能够在较小的面积下使得屏幕分辨率得以提高，保证画面的质感，满足用户近距离观看的需求。', 'CN202110804597.5', 1626364800, 'CN113597149A', 1635782400, 1635782400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 9, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN104175116A | CN111105720A | CN111405792A | CN206421778U | CN209328409U | CN211928967U | US20040123501A1 | US20150205564A1 | US20190294401A1', NULL, NULL, 1, '\\20220510\\f239f27ba4fa4c3eae9c62e456b55e55.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41639, 41641, 41640, 1);
INSERT INTO `os_patent` VALUES (24023, '发光显示装置以及发光显示装置的制作方法', '发光显示装置以及发光显示装置的制作方法', 'CN113629095A', '一种发光显示装置及发光显示装置的制作方法，其中所述发光显示装置包括量子点发光芯片以及驱动基板。所述量子点发光芯片包括一体成型制成的微发光二极管芯片及对应所述微发光二极管芯片上的量子点层，所述微发光二极管芯片包括依次层叠设置的第一电极、外延片以及第二电极，所述第一电极与所述第二电极设置在所述外延片的两相对应的表面上。所述量子点发光芯片的所述第二电极电性连接在所述驱动基板上的至少一电极区上，增加微发光二极管芯片(QD‑miniLED)的散热效果，并有望应用于大功率的发光显示器件中。', '一种发光显示装置及发光显示装置的制作方法，其中所述发光显示装置包括量子点发光芯片以及驱动基板。所述量子点发光芯片包括一体成型制成的微发光二极管芯片及对应所述微发光二极管芯片上的量子点层，所述微发光二极管芯片包括依次层叠设置的第一电极、外延片以及第二电极，所述第一电极与所述第二电极设置在所述外延片的两相对应的表面上。所述量子点发光芯片的所述第二电极电性连接在所述驱动基板上的至少一电极区上，增加微发光二极管芯片(QD‑miniLED)的散热效果，并有望应用于大功率的发光显示器件中。', 'CN202110814394.4', 1626624000, 'CN113629095A', 1636387200, 1636387200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 4, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN106935608A | CN107068665A | CN109407406A | CN110444559A', NULL, NULL, 1, '\\20220510\\116ff66be0a041c98f0b5379328d2eeb.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41642, 41644, 41643, 1);
INSERT INTO `os_patent` VALUES (24024, '一种拼接显示屏的制备方法及拼接显示屏', '一种拼接显示屏的制备方法及拼接显示屏', 'CN113629096A', '本发明涉及一种拼接显示屏的制备方法及拼接显示屏，本发明的拼接显示屏的制备方法将玻璃基板及显示面板组成第一组件，将多个第一组件拼接于第一保护膜的一侧的表面上，利用玻璃基板的刚性性能压制所述柔性基板，防止拼接过程中柔性基板发生卷边翘起的现象，提高柔性基板的拼接良率，进而提高制备形成的拼接显示屏的显示效果。', '本发明涉及一种拼接显示屏的制备方法及拼接显示屏，本发明的拼接显示屏的制备方法将玻璃基板及显示面板组成第一组件，将多个第一组件拼接于第一保护膜的一侧的表面上，利用玻璃基板的刚性性能压制所述柔性基板，防止拼接过程中柔性基板发生卷边翘起的现象，提高柔性基板的拼接良率，进而提高制备形成的拼接显示屏的显示效果。', 'CN202110844210.9', 1627228800, 'CN113629096A', 1636387200, 1636387200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 3, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, 'CN109860255A | US20170351475A1 | WO2018043337A1', NULL, NULL, 1, '\\20220510\\1bca40ee33c1403385112db0df99b4d3.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41645, 41647, 41646, 1);
INSERT INTO `os_patent` VALUES (24025, '阵列基板及其制备方法', '阵列基板及其制备方法', 'CN113629149A', '本申请提供一种阵列基板及其制备方法。阵列基板包括：基板。吸光层，所述吸光层设置于所述基板的一侧。第一金属层，所述第一金属层设置于所述吸光层远离所述基板的一侧，或所述第一金属层设置于所述基板远离所述吸光层的一侧。第二金属层，所述第二金属层设置于所述第一金属层远离所述基板的一侧。所述第二金属层包括栅极、源极、漏极和绑定部。所述绑定部与所述第一金属层连接。本申请提供的阵列基板，具有较高的光稳定性且制备工艺简单。', '本申请提供一种阵列基板及其制备方法。阵列基板包括：基板。吸光层，所述吸光层设置于所述基板的一侧。第一金属层，所述第一金属层设置于所述吸光层远离所述基板的一侧，或所述第一金属层设置于所述基板远离所述吸光层的一侧。第二金属层，所述第二金属层设置于所述第一金属层远离所述基板的一侧。所述第二金属层包括栅极、源极、漏极和绑定部。所述绑定部与所述第一金属层连接。本申请提供的阵列基板，具有较高的光稳定性且制备工艺简单。', 'CN202110849120.9', 1627315200, 'CN113629149A', 1636387200, 1636387200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 16, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\99026ca600404006b2d05231ef6f3406.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41648, 41650, 41649, 1);
INSERT INTO `os_patent` VALUES (24026, '驱动电路、微发光二极管封装芯片及微发光二极管灯板', '驱动电路、微发光二极管封装芯片及微发光二极管灯板', 'CN113643653A', '本发明提供一种驱动电路、微发光二极管封装芯片及微发光二极管灯板。所述驱动电路用于驱动微发光二极管封装芯片，包括N个第一线路、N个第二线路、N个第三线路以及N个第四线路，N为大于1的正整数，N个第二线路与N个第一线路交替设置，N个第三线路与N个第一线路一一对应设置，任一第四线路位于一个第一线路和对应的一个第三线路之间且包括(N‑1)个第四子线路；第一线路包括一个与电源正极电性连接的第一焊盘；第二线路包括与电源正极电性连接且串联的N个第二焊盘；第三线路包括与电源负极电性连接且串联的N个第三焊盘；第四子线路包括串联的一个第四焊盘和一个第五焊盘。所述驱动电路可实现N并N串或N*N并1串的连接方式。', '本发明提供一种驱动电路、微发光二极管封装芯片及微发光二极管灯板。所述驱动电路用于驱动微发光二极管封装芯片，包括N个第一线路、N个第二线路、N个第三线路以及N个第四线路，N为大于1的正整数，N个第二线路与N个第一线路交替设置，N个第三线路与N个第一线路一一对应设置，任一第四线路位于一个第一线路和对应的一个第三线路之间且包括(N‑1)个第四子线路；第一线路包括一个与电源正极电性连接的第一焊盘；第二线路包括与电源正极电性连接且串联的N个第二焊盘；第三线路包括与电源负极电性连接且串联的N个第三焊盘；第四子线路包括串联的一个第四焊盘和一个第五焊盘。所述驱动电路可实现N并N串或N*N并1串的连接方式。', 'CN202110923327.6', 1628697600, 'CN113643653A', 1636646400, 1636646400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 12, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\d10e3235e8ff424a8cd9a408418cdb99.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41651, 41653, 41652, 1);
INSERT INTO `os_patent` VALUES (24027, '显示面板及显示装置', '显示面板及显示装置', 'CN113689820A', '本申请公开了一种显示面板及显示装置，该显示面板包括至少一个像素电路、至少一个第一焊盘、至少一个第二焊盘、柔性电路板以及印制电路板，通过柔性电路板电性连接印制电路板与对应的第二焊盘，可以避免使用大量的覆晶薄膜，减少了边框空间，同时也可以减少信号的传输压降；且通过第一焊盘可以检测像素电路的电信号，或者传输测试信号至像素电路，如此便于实时测试或者了解像素电路的工作情况。', '本申请公开了一种显示面板及显示装置，该显示面板包括至少一个像素电路、至少一个第一焊盘、至少一个第二焊盘、柔性电路板以及印制电路板，通过柔性电路板电性连接印制电路板与对应的第二焊盘，可以避免使用大量的覆晶薄膜，减少了边框空间，同时也可以减少信号的传输压降；且通过第一焊盘可以检测像素电路的电信号，或者传输测试信号至像素电路，如此便于实时测试或者了解像素电路的工作情况。', 'CN202110941293.3', 1629129600, 'CN113689820A', 1637596800, 1637596800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\e551b01846b6447fb92eed9a1d804d85.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41654, 41656, 41655, 1);
INSERT INTO `os_patent` VALUES (24028, '发光器件驱动电路、背光模组以及显示面板', '发光器件驱动电路、背光模组以及显示面板', 'CN113689821A', '本申请实施例提供的发光器件驱动电路、背光模组以及显示面板，包括发光器件、驱动晶体管、数据信号写入模块、第一发光控制模块以及第二发光控制模块。通过使第一发光控制模块以及第二发光控制模块交替控制发光回路导通或截止，从而减少单个发光控制模块受正向偏压的时间，减小发光控制模块阈值电压漂移的幅度，提升驱动电路整体的稳定性，进而保证发光二极管的发光亮度均匀，改善Micro‑LED显示器件的显示效果。', '本申请实施例提供的发光器件驱动电路、背光模组以及显示面板，包括发光器件、驱动晶体管、数据信号写入模块、第一发光控制模块以及第二发光控制模块。通过使第一发光控制模块以及第二发光控制模块交替控制发光回路导通或截止，从而减少单个发光控制模块受正向偏压的时间，减小发光控制模块阈值电压漂移的幅度，提升驱动电路整体的稳定性，进而保证发光二极管的发光亮度均匀，改善Micro‑LED显示器件的显示效果。', 'CN202111033966.1', 1630598400, 'CN113689821A', 1637596800, 1637596800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 16, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\f54c43506fe34bd789b3275a5d5eb8a4.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41657, 41659, 41658, 1);
INSERT INTO `os_patent` VALUES (24029, '阵列基板的制作方法与显示装置', '阵列基板的制作方法与显示装置', 'CN113690269A', '一种阵列基板与显示面板的制作方法，包含提供第一基板，第一基板的上表面设置有上边缘基板线路，第一基板的下表面设置有下边缘基板线路；一次性在上边缘基板线路、下边缘基板线路、第一基板的上表面、第一基板的下表面，以及第一基板的侧面印刷感光银浆；三面曝光感光银浆；显影曝光后的感光银浆；以及固化显影后的感光银浆。', '一种阵列基板与显示面板的制作方法，包含提供第一基板，第一基板的上表面设置有上边缘基板线路，第一基板的下表面设置有下边缘基板线路；一次性在上边缘基板线路、下边缘基板线路、第一基板的上表面、第一基板的下表面，以及第一基板的侧面印刷感光银浆；三面曝光感光银浆；显影曝光后的感光银浆；以及固化显影后的感光银浆。', 'CN202110929912.7', 1628784000, 'CN113690269A', 1637596800, 1637596800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\9439b4050a1c4d7fae2b116eee499f7c.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41660, 41662, 41661, 1);
INSERT INTO `os_patent` VALUES (24030, '显示面板及其制备方法', '显示面板及其制备方法', 'CN113707675A', '本申请公开了一种显示面板及其制备方法。显示面板包括基板、多个发光单元、支撑层和太阳能电池板。多个发光单元设置在基板上。支撑层设置在基板靠近发光单元的一侧。支撑层开设有多个第一开孔。第一开孔暴露出发光单元。太阳能电池板覆盖支撑层。太阳能电池板开设有多个第二开孔。第二开孔与第一开孔连通以暴露出发光单元。本申请提供的显示面板可以提高太阳能电池板在显示面板中的贴合度。', '本申请公开了一种显示面板及其制备方法。显示面板包括基板、多个发光单元、支撑层和太阳能电池板。多个发光单元设置在基板上。支撑层设置在基板靠近发光单元的一侧。支撑层开设有多个第一开孔。第一开孔暴露出发光单元。太阳能电池板覆盖支撑层。太阳能电池板开设有多个第二开孔。第二开孔与第一开孔连通以暴露出发光单元。本申请提供的显示面板可以提高太阳能电池板在显示面板中的贴合度。', 'CN202110909067.7', 1628438400, 'CN113707675A', 1637856000, 1637856000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\57cdd1ad9605420a918a14b362fada16.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41663, 41665, 41664, 1);
INSERT INTO `os_patent` VALUES (24031, '显示系统', '显示系统', 'CN113724588A', '本申请实施例公开了一种显示系统，其包括信号源以及总接收模块。信号源用于发出第一功能信号。总接收模块设置于显示装置内，包括多个相互拼接的子接收模块，每一所述子接收模块均通过无线的方式接收所述信号源发出的第一功能信号，所述第一功能信号包含供所述子接收模块执行的功能指令。本申请通过使显示系统中各子模块采取无线通信的方式接收各种功能信号，使得显示装置内的数据走线被取消掉，简化了显示装置的结构，解决了现有技术中采用SOP技术的显示装置制造难度大的技术问题，同时也保证了各子模块的数据传输效率。', '本申请实施例公开了一种显示系统，其包括信号源以及总接收模块。信号源用于发出第一功能信号。总接收模块设置于显示装置内，包括多个相互拼接的子接收模块，每一所述子接收模块均通过无线的方式接收所述信号源发出的第一功能信号，所述第一功能信号包含供所述子接收模块执行的功能指令。本申请通过使显示系统中各子模块采取无线通信的方式接收各种功能信号，使得显示装置内的数据走线被取消掉，简化了显示装置的结构，解决了现有技术中采用SOP技术的显示装置制造难度大的技术问题，同时也保证了各子模块的数据传输效率。', 'CN202110935887.3', 1629043200, 'CN113724588A', 1638201600, 1638201600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 16, 4, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\e4c6868fa78042039514c2fcc8b01153.png', NULL, NULL, 1, NULL, NULL, 11, NULL, NULL, NULL, 41666, 41668, 41667, 1);
INSERT INTO `os_patent` VALUES (24032, '显示面板、其制作方法及显示装置', '显示面板、其制作方法及显示装置', 'CN113745263A', '本发明涉及一种显示面板其制作方法及显示装置，所述显示面板将VDD走线分成高电位连接垫和高电位走线两部分，将VSS走线分成低电位连接垫和低电位走线两部分，将高电位走线和低电位走线布置于盖板上，在显示基板上仅保留高电位连接垫和低电位连接垫，将高电位走线和高电位连接垫通过第一连接垫形成电连接，将低电位走线和低电位连接垫通过第二连接垫形成电连接，从而将走线部分从显示基板上分离，改善因为压降导致的显示区域亮度不均的问题，提高信赖性，提升显示品味，并可增加显示基板的设计、结构以及制程余地。', '本发明涉及一种显示面板其制作方法及显示装置，所述显示面板将VDD走线分成高电位连接垫和高电位走线两部分，将VSS走线分成低电位连接垫和低电位走线两部分，将高电位走线和低电位走线布置于盖板上，在显示基板上仅保留高电位连接垫和低电位连接垫，将高电位走线和高电位连接垫通过第一连接垫形成电连接，将低电位走线和低电位连接垫通过第二连接垫形成电连接，从而将走线部分从显示基板上分离，改善因为压降导致的显示区域亮度不均的问题，提高信赖性，提升显示品味，并可增加显示基板的设计、结构以及制程余地。', 'CN202110948936.7', 1629216000, 'CN113745263A', 1638460800, 1638460800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 15, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\20f4918e3f384baba06aaa825da962be.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41669, 41671, 41670, 1);
INSERT INTO `os_patent` VALUES (24033, 'Micro LED显示面板及其制备方法', 'Micro LED显示面板及其制备方法', 'CN113745265A', '本申请公开了Micro LED显示面板及其制备方法，Micro LED显示面板包括：玻璃基板、遮光层、缓冲层、薄膜晶体管层、钝化层、ITO连接层、公共连接层、第一金属走线以及第二金属走线。公共连接层设于ITO连接层上，其图案化形成第一电极、第二电极、VDD走线以及VSS走线；第一金属通孔和第二金属通孔均依次贯穿钝化层、介电层、缓冲层以及玻璃基板；第一金属走线填充第一金属通孔，且覆盖VDD走线；第二金属走线填充第二金属通孔，且延覆盖VSS走线。本发明采用打孔的方式，使得位于阵列基板正面的VDD走线和VSS走线连接至位于背面阵列基板的第一金属连接层和第二金属连接层，由于背面走线因不影响显示，因此，通过增加背面走线的线宽、膜厚，以实现低电阻。', '本申请公开了Micro LED显示面板及其制备方法，Micro LED显示面板包括：玻璃基板、遮光层、缓冲层、薄膜晶体管层、钝化层、ITO连接层、公共连接层、第一金属走线以及第二金属走线。公共连接层设于ITO连接层上，其图案化形成第一电极、第二电极、VDD走线以及VSS走线；第一金属通孔和第二金属通孔均依次贯穿钝化层、介电层、缓冲层以及玻璃基板；第一金属走线填充第一金属通孔，且覆盖VDD走线；第二金属走线填充第二金属通孔，且延覆盖VSS走线。本发明采用打孔的方式，使得位于阵列基板正面的VDD走线和VSS走线连接至位于背面阵列基板的第一金属连接层和第二金属连接层，由于背面走线因不影响显示，因此，通过增加背面走线的线宽、膜厚，以实现低电阻。', 'CN202110954274.4', 1629302400, 'CN113745265A', 1638460800, 1638460800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\c8bfded1c1974c00aabd64a87ffbf100.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41672, 41674, 41673, 1);
INSERT INTO `os_patent` VALUES (24034, '量子点彩膜基板、其制造方法、以及量子点显示装置', '量子点彩膜基板、其制造方法、以及量子点显示装置', 'CN113745292A', '本发明提供一种量子点彩膜基板、其制造方法、以及量子点显示装置。所述量子点彩膜基板包括：一基板；一彩色滤光层，设置在所述基板之上，所述彩色滤光层包括多个彩色光阻单元和第一黑色光阻层；一阻隔层，设置在所述彩色滤光层之上；一量子点发光层，设置在所述阻隔层之上，所述量子点发光层包括多个量子点发光单元和第二黑色光阻层，每一个量子点发光单元之间通过所述第二黑色光阻层隔开；一散射层，设置在所述第二黑色光阻层的与所述多个量子点发光单元相邻接的侧表面；以及一封裝层，设置在所述量子点发光层之上；其中，所述第二黑色光阻层的与所述多个量子点发光单元相邻接的侧表面为一斜面或一凹曲面。', '本发明提供一种量子点彩膜基板、其制造方法、以及量子点显示装置。所述量子点彩膜基板包括：一基板；一彩色滤光层，设置在所述基板之上，所述彩色滤光层包括多个彩色光阻单元和第一黑色光阻层；一阻隔层，设置在所述彩色滤光层之上；一量子点发光层，设置在所述阻隔层之上，所述量子点发光层包括多个量子点发光单元和第二黑色光阻层，每一个量子点发光单元之间通过所述第二黑色光阻层隔开；一散射层，设置在所述第二黑色光阻层的与所述多个量子点发光单元相邻接的侧表面；以及一封裝层，设置在所述量子点发光层之上；其中，所述第二黑色光阻层的与所述多个量子点发光单元相邻接的侧表面为一斜面或一凹曲面。', 'CN202110995186.9', 1629993600, 'CN113745292A', 1638460800, 1638460800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\d3c2c35c4c8d4cc6b8b08f1b051761f2.png', NULL, NULL, 1, NULL, NULL, 11, NULL, NULL, NULL, 41675, 41677, 41676, 1);
INSERT INTO `os_patent` VALUES (24035, '背光模组及其制备方法、显示装置', '背光模组及其制备方法、显示装置', 'CN113759607A', '本发明提供了一种背光模组及其制备方法、显示装置。所述背光模组中包括走线层、绝缘层、背光源以及反光层。所述走线层和所述绝缘层叠层设置。所述背光源设于所述绝缘层上，并与所述走线层电连接。所述反光层设于所述绝缘层上，并围绕所述背光源设置。', '本发明提供了一种背光模组及其制备方法、显示装置。所述背光模组中包括走线层、绝缘层、背光源以及反光层。所述走线层和所述绝缘层叠层设置。所述背光源设于所述绝缘层上，并与所述走线层电连接。所述反光层设于所述绝缘层上，并围绕所述背光源设置。', 'CN202111068989.6', 1631462400, 'CN113759607A', 1638806400, 1638806400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\c9d81cfe732e44c8ab98276cb8889729.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41678, 41680, 41679, 1);
INSERT INTO `os_patent` VALUES (24036, 'Micro LED器件及其制备方法', 'Micro LED器件及其制备方法', 'CN113777880A', '本申请公开了一种Micro LED器件及其制备方法，制备方法包括如下步骤：提供一压印模具；涂布光阻溶液光于一基板的侧面，形成未固化的液态光阻层；将所述压印模具的第一凸部压合至所述液态光阻层上；对所述液态光阻层进行固化处理，形成固态光阻层；将所述压印模具从所述固态光阻层上移除，得到图案化的固态光阻层；其中，所述固态光阻层包括若干个阵列排布的第二凸部以及开口；形成金属层于所述第二凸部上表面及所述开口内；以及剥离所述第二凸部及设于所述第二凸部上表面的金属层，剩余的金属层为金属线路。采用压印的方式在基板的侧面形成金属线路，以免去了激光雕刻的复杂工艺，从而缩短工艺时间，以加快生产速度。', '本申请公开了一种Micro LED器件及其制备方法，制备方法包括如下步骤：提供一压印模具；涂布光阻溶液光于一基板的侧面，形成未固化的液态光阻层；将所述压印模具的第一凸部压合至所述液态光阻层上；对所述液态光阻层进行固化处理，形成固态光阻层；将所述压印模具从所述固态光阻层上移除，得到图案化的固态光阻层；其中，所述固态光阻层包括若干个阵列排布的第二凸部以及开口；形成金属层于所述第二凸部上表面及所述开口内；以及剥离所述第二凸部及设于所述第二凸部上表面的金属层，剩余的金属层为金属线路。采用压印的方式在基板的侧面形成金属线路，以免去了激光雕刻的复杂工艺，从而缩短工艺时间，以加快生产速度。', 'CN202111068902.5', 1631462400, 'CN113777880A', 1639065600, 1639065600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\875a955a9ea746cc918f0968e18e0d6e.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41681, 41683, 41682, 1);
INSERT INTO `os_patent` VALUES (24037, '一种显示面板制作方法、拼接屏制作方法及显示装置', '一种显示面板制作方法、拼接屏制作方法及显示装置', 'CN113782556A', '本发明公开了一种显示面板制作方法、拼接屏制作方法及显示装置，涉及显示装置制作技术领域，本发明所提供的显示面板制作方法、拼接屏制作方法及显示装置，主要对背板、盖板之间的封装工序作出改进，在本发明所提供的实施例中，背板和盖板在进行封装时，首先于两者之间设置支撑墙，使得支撑墙配合背板、盖板一并围合出收容发光器件的待灌注腔，再进行封装胶灌注。其中，由于背板和盖板之间受到了支撑墙的支撑作用，所以固化后形成于待灌注腔当中的封装胶能够维持在一个较为稳定的膜层厚度，减少了显示面板当中封装胶膜层厚度误差，进而减少了不同待拼接显示面板中封装胶膜层厚度差异，提升了封装胶膜层厚度的均一性。', '本发明公开了一种显示面板制作方法、拼接屏制作方法及显示装置，涉及显示装置制作技术领域，本发明所提供的显示面板制作方法、拼接屏制作方法及显示装置，主要对背板、盖板之间的封装工序作出改进，在本发明所提供的实施例中，背板和盖板在进行封装时，首先于两者之间设置支撑墙，使得支撑墙配合背板、盖板一并围合出收容发光器件的待灌注腔，再进行封装胶灌注。其中，由于背板和盖板之间受到了支撑墙的支撑作用，所以固化后形成于待灌注腔当中的封装胶能够维持在一个较为稳定的膜层厚度，减少了显示面板当中封装胶膜层厚度误差，进而减少了不同待拼接显示面板中封装胶膜层厚度差异，提升了封装胶膜层厚度的均一性。', 'CN202111059247.7', 1631203200, 'CN113782556A', 1639065600, 1639065600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\a37a9883c8a44f4f941b8e21553788c1.png', NULL, NULL, 1, NULL, NULL, 12, NULL, NULL, NULL, 41684, 41686, 41685, 1);
INSERT INTO `os_patent` VALUES (24038, '拼接显示面板、拼接单元的制备方法以及拼接显示装置', '拼接显示面板、拼接单元的制备方法以及拼接显示装置', 'CN113809061A', '本申请公开了一种拼接显示面板、拼接单元的制备方法以及拼接显示装置，所述拼接显示面板包括至少两个拼接单元，所述拼接单元包括：一衬底基板，所述衬底基板上设置有多个贯穿所述衬底基板的走线孔；驱动线路，设置于所述衬底基板上；多个LED芯片，设置于所述衬底基板设置有所述驱动线路的一侧，并与所述驱动线路导通；覆晶薄膜，设置于所述衬底基板背向所述LED芯片的一侧，通过所述走线孔与所述驱动线路电连接；其中，相邻两个所述拼接单元拼接时所形成的拼缝为非直线型。通过在所述衬底基板上设置走线孔，将驱动线路导通至所述衬底基板的背面，以及将所述拼接单元的拼缝设置成非直线性，实现无缝拼接的同时，改善了拼缝处的光学均一性。', '本申请公开了一种拼接显示面板、拼接单元的制备方法以及拼接显示装置，所述拼接显示面板包括至少两个拼接单元，所述拼接单元包括：一衬底基板，所述衬底基板上设置有多个贯穿所述衬底基板的走线孔；驱动线路，设置于所述衬底基板上；多个LED芯片，设置于所述衬底基板设置有所述驱动线路的一侧，并与所述驱动线路导通；覆晶薄膜，设置于所述衬底基板背向所述LED芯片的一侧，通过所述走线孔与所述驱动线路电连接；其中，相邻两个所述拼接单元拼接时所形成的拼缝为非直线型。通过在所述衬底基板上设置走线孔，将驱动线路导通至所述衬底基板的背面，以及将所述拼接单元的拼缝设置成非直线性，实现无缝拼接的同时，改善了拼缝处的光学均一性。', 'CN202110983763.2', 1629820800, 'CN113809061A', 1639670400, 1639670400, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\cf2a7939564b4b9993c2e711af0e8fde.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41687, 41689, 41688, 1);
INSERT INTO `os_patent` VALUES (24039, '一种显示面板及其制备方法', '一种显示面板及其制备方法', 'CN113838963A', '本发明涉及一种显示面板及其制备方法。本发明的显示面板包括：基底层、多个导电单元以及多个Mini LED。其中，导电单元的材质为导电油墨，导电油墨包括预聚物、单体、导电填料及光引发剂。本发明利用预聚物、单体、导电填料及光引发剂形成导电油墨，然后利用导电油墨制备形成的导电单元实现Mini LED与导电元件之间的电性连接，利用导电油墨本身的粘性吸附MiniLED，提升Mini LED的转移精度，防止Mini LED与导电单元之间吸附不牢固，影响导电单元与Mini LED之间的电连接。采用涂布曝光显影的方式制作导电单元，可控的调节相邻的导电单元之间的间隙，进一步的提升Mini LED的转移精度。', '本发明涉及一种显示面板及其制备方法。本发明的显示面板包括：基底层、多个导电单元以及多个Mini LED。其中，导电单元的材质为导电油墨，导电油墨包括预聚物、单体、导电填料及光引发剂。本发明利用预聚物、单体、导电填料及光引发剂形成导电油墨，然后利用导电油墨制备形成的导电单元实现Mini LED与导电元件之间的电性连接，利用导电油墨本身的粘性吸附MiniLED，提升Mini LED的转移精度，防止Mini LED与导电单元之间吸附不牢固，影响导电单元与Mini LED之间的电连接。采用涂布曝光显影的方式制作导电单元，可控的调节相邻的导电单元之间的间隙，进一步的提升Mini LED的转移精度。', 'CN202111073784.7', 1631548800, 'CN113838963A', 1640275200, 1640275200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\bd843a51bdeb4418b09c5ee1eb410aad.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41690, 41692, 41691, 1);
INSERT INTO `os_patent` VALUES (24040, '显示模组及其制备方法、显示装置', '显示模组及其制备方法、显示装置', 'CN113936558A', '本发明提供一种显示模组及其制备方法、显示装置，显示模组包括柔性显示面板和复合盖板层，复合盖板层包括超薄玻璃和保护盖板，保护盖板和超薄玻璃之间设置有第一光学胶层，第一光学胶层靠近保护盖板的一侧的表面粗糙度小于第一光学胶层靠近超薄玻璃的一侧的表面粗糙度；本发明通过在保护盖板和超薄玻璃之间设置第一光学胶层，且第一光学胶层靠近保护盖板的一侧的表面粗糙度小于第一光学胶层靠近超薄玻璃的一侧的表面粗糙度，可改善保护盖板的表面平整度，有效改善显示模组的外观“橘皮”现象。', '本发明提供一种显示模组及其制备方法、显示装置，显示模组包括柔性显示面板和复合盖板层，复合盖板层包括超薄玻璃和保护盖板，保护盖板和超薄玻璃之间设置有第一光学胶层，第一光学胶层靠近保护盖板的一侧的表面粗糙度小于第一光学胶层靠近超薄玻璃的一侧的表面粗糙度；本发明通过在保护盖板和超薄玻璃之间设置第一光学胶层，且第一光学胶层靠近保护盖板的一侧的表面粗糙度小于第一光学胶层靠近超薄玻璃的一侧的表面粗糙度，可改善保护盖板的表面平整度，有效改善显示模组的外观“橘皮”现象。', 'CN202111246367.8', 1635177600, 'CN113936558A', 1642089600, 1642089600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\9b0f0627f35a4a3a88abf26f137949aa.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41693, 41695, 41694, 1);
INSERT INTO `os_patent` VALUES (24041, '一种发光器件转印方法及发光器件转印系统', '一种发光器件转印方法及发光器件转印系统', 'CN113972233A', '本申请实施例公开了一种发光器件转印方法及发光器件转印系统。通过在发光器件上增加缓冲层，再利用转印探针嵌入缓冲层拾取发光器件进行转印。由于是将转印探针嵌入发光器件上的缓冲层对发光器件进行转移，因而不存在各个发光器件受力不均的问题。由此，能够将发光器件精准置于目标区域，进而提升发光二极管转移的良率。另外，本申请实施例提供的发光器件转印方法中的转印探针可以选用微纳探针。微纳探针的针体较小，能够对微型发光二极管或迷你发光二极管进行转印。采用微纳探针进行转印，能够避免采用真空吸附的转移探头精度小的情况下吸附力过小难以吸附发光器件的情况，使发光器件在转移过程中保持稳定。', '本申请实施例公开了一种发光器件转印方法及发光器件转印系统。通过在发光器件上增加缓冲层，再利用转印探针嵌入缓冲层拾取发光器件进行转印。由于是将转印探针嵌入发光器件上的缓冲层对发光器件进行转移，因而不存在各个发光器件受力不均的问题。由此，能够将发光器件精准置于目标区域，进而提升发光二极管转移的良率。另外，本申请实施例提供的发光器件转印方法中的转印探针可以选用微纳探针。微纳探针的针体较小，能够对微型发光二极管或迷你发光二极管进行转印。采用微纳探针进行转印，能够避免采用真空吸附的转移探头精度小的情况下吸附力过小难以吸附发光器件的情况，使发光器件在转移过程中保持稳定。', 'CN202111189274.6', 1633968000, 'CN113972233A', 1643040000, 1643040000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 15, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\d70ab3e8c79248b6aea96fe1669ed577.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41696, 41698, 41697, 1);
INSERT INTO `os_patent` VALUES (24042, '一种显示面板及其制备方法', '一种显示面板及其制备方法', 'CN113990997A', '本发明提供一种显示面板及其制备方法，该显示面板包括阵列基板、位于阵列基板表面的近红外Micro‑LED芯片阵列以及位于近红外Micro‑LED芯片阵列表面的色转化层；色转化层的材料包括转换荧光材料和掺杂于转换荧光材料中的稀土材料，在转换荧光材料添加稀土材料，由于稀土材料具有较低的声子能量，大大降低了无辐射弛豫几率的发生，有效的提高了转换荧光材料的发光效率，以Yb3+作为敏化剂，Er3+作为活化剂，通过Yb3+向Er 3+之间的能量传递，可以实现有效的近红外光向可见上转换光致发光效率，Er3+，Yb3+共掺的上转换荧光材料效率较高，色纯度高的优点，近红外光通过色转化层转化为纯净的红光、蓝光和绿光，且各个近红外Micro‑LED芯片寿命和性能相同，满足Micro‑LED的全彩化方案。', '本发明提供一种显示面板及其制备方法，该显示面板包括阵列基板、位于阵列基板表面的近红外Micro‑LED芯片阵列以及位于近红外Micro‑LED芯片阵列表面的色转化层；色转化层的材料包括转换荧光材料和掺杂于转换荧光材料中的稀土材料，在转换荧光材料添加稀土材料，由于稀土材料具有较低的声子能量，大大降低了无辐射弛豫几率的发生，有效的提高了转换荧光材料的发光效率，以Yb3+作为敏化剂，Er3+作为活化剂，通过Yb3+向Er 3+之间的能量传递，可以实现有效的近红外光向可见上转换光致发光效率，Er3+，Yb3+共掺的上转换荧光材料效率较高，色纯度高的优点，近红外光通过色转化层转化为纯净的红光、蓝光和绿光，且各个近红外Micro‑LED芯片寿命和性能相同，满足Micro‑LED的全彩化方案。', 'CN202111175886.X', 1633708800, 'CN113990997A', 1643299200, 1643299200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 14, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\fb32393fa7c24986bd858d43c9bf3267.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41699, 41701, 41700, 1);
INSERT INTO `os_patent` VALUES (24043, '滤光准直复合膜及其制造方法、显示装置', '滤光准直复合膜及其制造方法、显示装置', 'CN114002769A', '本申请实施例公开了一种滤光准直复合膜及其制造方法、显示装置，滤光准直复合膜包括：滤光膜层，用于使特定波长的光透过；第一棱镜膜层，设置于滤光膜层上，第一棱镜膜层包括多个第一棱镜结构；第二棱镜膜层，包括透光层和多个第二棱镜结构，第二棱镜结构设置于透光层远离滤光膜层的一侧；准直层，设置于滤光膜层和第二棱镜膜层之间，准直层包括准直孔。将滤光膜层、第一棱镜膜层、第二棱镜膜层和准直层制作在为一整体，在显示装置中直接贴附使用即可，不需要单独设置光滤过层，不需要单独制作准直层，不需要单独制作或贴附的棱镜层，可以降低显示装置厚度较厚，利于轻薄化，且简化了制作工艺，还能取得优异传感器功能。', '本申请实施例公开了一种滤光准直复合膜及其制造方法、显示装置，滤光准直复合膜包括：滤光膜层，用于使特定波长的光透过；第一棱镜膜层，设置于滤光膜层上，第一棱镜膜层包括多个第一棱镜结构；第二棱镜膜层，包括透光层和多个第二棱镜结构，第二棱镜结构设置于透光层远离滤光膜层的一侧；准直层，设置于滤光膜层和第二棱镜膜层之间，准直层包括准直孔。将滤光膜层、第一棱镜膜层、第二棱镜膜层和准直层制作在为一整体，在显示装置中直接贴附使用即可，不需要单独设置光滤过层，不需要单独制作准直层，不需要单独制作或贴附的棱镜层，可以降低显示装置厚度较厚，利于轻薄化，且简化了制作工艺，还能取得优异传感器功能。', 'CN202111219410.1', 1634659200, 'CN114002769A', 1643644800, 1643644800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 0, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\f310344ab6c44afca6323a27c86ddbe1.png', NULL, NULL, 1, NULL, NULL, 11, NULL, NULL, NULL, 41702, 41704, 41703, 1);
INSERT INTO `os_patent` VALUES (24044, '显示面板及拼接显示面板', '显示面板及拼接显示面板', 'CN114023763A', '本申请提供一种显示面板及拼接显示面板，该拼接显示面板由多个显示面板拼接而成，显示面板包括衬底基板、信号线、绑定焊盘，通过将绑定焊盘设置于衬底基板的第二侧上，并利用贯穿衬底基板的过孔将信号线与绑定焊盘电性连接，以此减小甚至消除显示面板的下边框的宽度，改善拼接显示面板在拼接位置处存在明显的“黑线”的情况，实现无缝拼接的效果。', '本申请提供一种显示面板及拼接显示面板，该拼接显示面板由多个显示面板拼接而成，显示面板包括衬底基板、信号线、绑定焊盘，通过将绑定焊盘设置于衬底基板的第二侧上，并利用贯穿衬底基板的过孔将信号线与绑定焊盘电性连接，以此减小甚至消除显示面板的下边框的宽度，改善拼接显示面板在拼接位置处存在明显的“黑线”的情况，实现无缝拼接的效果。', 'CN202111217381.5', 1634572800, 'CN114023763A', 1644249600, 1644249600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 4, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\60f8549ca9b84f1294660d54da83650a.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41705, 41707, 41706, 1);
INSERT INTO `os_patent` VALUES (24045, '一种显示面板及制作方法和移动终端', '一种显示面板及制作方法和移动终端', 'CN114023783A', '本申请提出了一种显示面板及制作方法和移动终端；该显示面板包括衬底和位于所述衬底上的发光驱动层；其中，所述发光驱动层包括：发光器件，设置于所述衬底上，所述发光器件包括由半导体材料构成的发光层以及位于所述发光层两侧的源极和漏极；以及栅极，位于所述发光器件的至少一侧，所述栅极与所述发光器件绝缘设置；本申请将用于控制开关的薄膜晶体管与发光二极管的发光结构集成起来，形成具有开关功能的发光薄膜晶体管，从而可以省略芯片转移的步骤，解除或较大程度缓解了现阶段芯片转移技术对MiniLED/Micro‑LED显示面板的限制问题。', '本申请提出了一种显示面板及制作方法和移动终端；该显示面板包括衬底和位于所述衬底上的发光驱动层；其中，所述发光驱动层包括：发光器件，设置于所述衬底上，所述发光器件包括由半导体材料构成的发光层以及位于所述发光层两侧的源极和漏极；以及栅极，位于所述发光器件的至少一侧，所述栅极与所述发光器件绝缘设置；本申请将用于控制开关的薄膜晶体管与发光二极管的发光结构集成起来，形成具有开关功能的发光薄膜晶体管，从而可以省略芯片转移的步骤，解除或较大程度缓解了现阶段芯片转移技术对MiniLED/Micro‑LED显示面板的限制问题。', 'CN202111268258.6', 1635436800, 'CN114023783A', 1644249600, 1644249600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 0, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\6e670d8e184b4ca6b58b47602eb00e6b.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41708, 41710, 41709, 1);
INSERT INTO `os_patent` VALUES (24046, '一种显示面板及显示面板的制备方法', '一种显示面板及显示面板的制备方法', 'CN114023850A', '本发明提供一种显示面板及其制备方法，在制备形成显示面板时，将微型发光二极管巨量转移至衬底上，并在该衬底上制备形成发光器件层，同时对发光器件层进行蚀刻，使发光器件层内发光二极管的端子暴露出，进而再在该发光器件层上制备形成阵列基板并最终形成本发明实施例中提供的显示面板。本发明实施例中提供的制备方法有效的避免了现有工艺中在对巨量的发光二极管进行转移时，微型发光二极管容易发生脱落等失效问题，进而有效的提高了显示面板的性能以及质量。', '本发明提供一种显示面板及其制备方法，在制备形成显示面板时，将微型发光二极管巨量转移至衬底上，并在该衬底上制备形成发光器件层，同时对发光器件层进行蚀刻，使发光器件层内发光二极管的端子暴露出，进而再在该发光器件层上制备形成阵列基板并最终形成本发明实施例中提供的显示面板。本发明实施例中提供的制备方法有效的避免了现有工艺中在对巨量的发光二极管进行转移时，微型发光二极管容易发生脱落等失效问题，进而有效的提高了显示面板的性能以及质量。', 'CN202111253110.5', 1635264000, 'CN114023850A', 1644249600, 1644249600, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 0, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\f8061f26f9a74a849c6943de87a025db.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41711, 41713, 41712, 1);
INSERT INTO `os_patent` VALUES (24047, '背光模组', '背光模组', 'CN114035375A', '本发明提供一种背光模组，该背光模组包括背板、位于背板上的Mini‑LED背光源、以及位于Mini‑LED背光源上的光波导层，光波导层包括反射型纳米结构和覆盖反射型纳米结构的半透射半反射膜层；Mini‑LED背光源包括阵列设置的Mini‑LED芯片和覆盖Mini‑LED芯片的封装层，反射型纳米结构包括光偶进单元和光偶出单元，光偶进单元与Mini‑LED芯片出光面的中心位置对位设置，光偶出单元位于Mini‑LED芯片的两侧；Mini‑LED背光源还包括与Mini‑LED芯片同层设置的反射块，且反射块位于相邻Mini‑LED芯片之间；本发明利用光波导层解决LED芯片的发光存在中心灯口较周边区域亮度差的问题，以此提高背光模组出光品质，还利用反射块提高背光模组的出光效率。', '本发明提供一种背光模组，该背光模组包括背板、位于背板上的Mini‑LED背光源、以及位于Mini‑LED背光源上的光波导层，光波导层包括反射型纳米结构和覆盖反射型纳米结构的半透射半反射膜层；Mini‑LED背光源包括阵列设置的Mini‑LED芯片和覆盖Mini‑LED芯片的封装层，反射型纳米结构包括光偶进单元和光偶出单元，光偶进单元与Mini‑LED芯片出光面的中心位置对位设置，光偶出单元位于Mini‑LED芯片的两侧；Mini‑LED背光源还包括与Mini‑LED芯片同层设置的反射块，且反射块位于相邻Mini‑LED芯片之间；本发明利用光波导层解决LED芯片的发光存在中心灯口较周边区域亮度差的问题，以此提高背光模组出光品质，还利用反射块提高背光模组的出光效率。', 'CN202111399134.1', 1637251200, 'CN114035375A', 1644508800, 1644508800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 0, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\6ac06020161f4d81b3040fba99e81aac.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41714, 41716, 41715, 1);
INSERT INTO `os_patent` VALUES (24048, '视频画面亮度调节方法、装置、显示装置及存储介质', '视频画面亮度调节方法、装置、显示装置及存储介质', 'CN114038402A', '本申请公开了一种视频画面亮度调节方法、装置、显示装置及存储介质。该方法包括：获取显示屏待侦测的输入图像；将所述输入图像划分为预设数量的分区单元；根据所述分区单元和预设侦测分区包含的分区单元数量，得到若干多合一的侦测分区；获取各所述侦测分区的分区灰阶值；根据所述分区灰阶值对所述显示屏亮度进行调节。本申请实施例能够使得Rtings实时动态场景中的白框在8K Mini‑LED裸机上的亮度达到目标值，并符合功率限制条件，并保证画质品味。', '本申请公开了一种视频画面亮度调节方法、装置、显示装置及存储介质。该方法包括：获取显示屏待侦测的输入图像；将所述输入图像划分为预设数量的分区单元；根据所述分区单元和预设侦测分区包含的分区单元数量，得到若干多合一的侦测分区；获取各所述侦测分区的分区灰阶值；根据所述分区灰阶值对所述显示屏亮度进行调节。本申请实施例能够使得Rtings实时动态场景中的白框在8K Mini‑LED裸机上的亮度达到目标值，并符合功率限制条件，并保证画质品味。', 'CN202111284160.X', 1635696000, 'CN114038402A', 1644508800, 1644508800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 0, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\cd3b92a6ccd744a082d01298c79901a7.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41717, 41719, 41718, 1);
INSERT INTO `os_patent` VALUES (24049, '电致发光器件、其制备方法和显示器件', '电致发光器件、其制备方法和显示器件', 'CN114038886A', '本发明公开了一种电致发光器件、其制备方法和显示器件。该电致发光器件包括：相对设置的阴极和阳极；同层设置于阴极与阳极之间的红色子发光单元、绿色子发光单元和蓝色子发光单元；其中，红色子发光单元包括红色量子点发光层；绿色子发光单元包括绿色量子点发光层；蓝色子发光单元包括蓝光Micro‑LED功能主体，蓝光Micro‑LED功能主体中包括p型半导体层和n型半导体层，p型半导体层相较于n型半导体层靠近于阳极设置。该电致发光器件选用垂直结构的蓝光Micro‑LED功能主体替代蓝色量子点发光二极管，避免了传统的蓝色量子点发光二极管低效率和低寿命的缺点，实现了低成本、高效率、高稳定性的全色量子点发光显示器件。', '本发明公开了一种电致发光器件、其制备方法和显示器件。该电致发光器件包括：相对设置的阴极和阳极；同层设置于阴极与阳极之间的红色子发光单元、绿色子发光单元和蓝色子发光单元；其中，红色子发光单元包括红色量子点发光层；绿色子发光单元包括绿色量子点发光层；蓝色子发光单元包括蓝光Micro‑LED功能主体，蓝光Micro‑LED功能主体中包括p型半导体层和n型半导体层，p型半导体层相较于n型半导体层靠近于阳极设置。该电致发光器件选用垂直结构的蓝光Micro‑LED功能主体替代蓝色量子点发光二极管，避免了传统的蓝色量子点发光二极管低效率和低寿命的缺点，实现了低成本、高效率、高稳定性的全色量子点发光显示器件。', 'CN202011498850.0', 1608134400, 'CN114038886A', 1644508800, 1644508800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 15, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '917', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\ef261e38c1874667ad1cf10e97e48b43.png', NULL, NULL, 3, NULL, NULL, 12, NULL, NULL, NULL, 41720, 41722, 41721, 1);
INSERT INTO `os_patent` VALUES (24050, '显示器件及其制作方法', '显示器件及其制作方法', 'CN114038887A', '本发明涉及一种显示器件及其制作方法。该显示器件包括基板以及设置在基板上的红色子像素、绿色子像素以及蓝色子像素。其中，红色子像素和绿色子像素均为QLED，蓝色子像素为Micro‑LED。上述显示器件将蓝色Micro‑LED、红色QLED和绿色QLED集成于同一显示器件中，解决了蓝色QLED效率和寿命较差的问题，提高了显示器件的效率和寿命。由于仅蓝色子像素采用Micro‑LED，因此可以大幅降低Micro‑LED的转移制作成本，同时由于蓝色Micro‑LED相比于红绿Micro‑LED，其器件效率随芯片尺寸减小下降幅度最小，因此上述显示器件各取所长，扬长避短，兼具效率、寿命和成本等方面的优势。', '本发明涉及一种显示器件及其制作方法。该显示器件包括基板以及设置在基板上的红色子像素、绿色子像素以及蓝色子像素。其中，红色子像素和绿色子像素均为QLED，蓝色子像素为Micro‑LED。上述显示器件将蓝色Micro‑LED、红色QLED和绿色QLED集成于同一显示器件中，解决了蓝色QLED效率和寿命较差的问题，提高了显示器件的效率和寿命。由于仅蓝色子像素采用Micro‑LED，因此可以大幅降低Micro‑LED的转移制作成本，同时由于蓝色Micro‑LED相比于红绿Micro‑LED，其器件效率随芯片尺寸减小下降幅度最小，因此上述显示器件各取所长，扬长避短，兼具效率、寿命和成本等方面的优势。', 'CN202011636438.0', 1609344000, 'CN114038887A', 1644508800, 1644508800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 13, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '917', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\6191f5e9c3a742b8bae872628641cc7e.png', NULL, NULL, 3, NULL, NULL, 17, NULL, NULL, NULL, 41723, 41725, 41724, 1);
INSERT INTO `os_patent` VALUES (24051, '显示器件及其制作方法', '显示器件及其制作方法', 'CN114038888A', '本发明涉及一种显示器件，包括基板、中间层、第一子像素以及第二子像素。中间层覆盖在基板上。第一子像素为Micro‑LED，第二子像素包括QLED和/或OLED。第一子像素埋设在中间层中，且中间层至少露出第一子像素远离基板的一侧表面。第二子像素设置在中间层远离基板的一侧上。上述显示器件及其制作方法在基板上设置第一子像素和第二子像素，在基板上设置中间层，第一子像素埋设在中间层中，且中间层至少露出第一子像素远离基板的一侧表面，而第二子像素设置在中间层远离基板的一侧上，如此，第一子像素相较于第二子像素更靠近基板，能够避免第一子像素相对于第二子像素过高的情况，从而能够提高后续的封装效果。', '本发明涉及一种显示器件，包括基板、中间层、第一子像素以及第二子像素。中间层覆盖在基板上。第一子像素为Micro‑LED，第二子像素包括QLED和/或OLED。第一子像素埋设在中间层中，且中间层至少露出第一子像素远离基板的一侧表面。第二子像素设置在中间层远离基板的一侧上。上述显示器件及其制作方法在基板上设置第一子像素和第二子像素，在基板上设置中间层，第一子像素埋设在中间层中，且中间层至少露出第一子像素远离基板的一侧表面，而第二子像素设置在中间层远离基板的一侧上，如此，第一子像素相较于第二子像素更靠近基板，能够避免第一子像素相对于第二子像素过高的情况，从而能够提高后续的封装效果。', 'CN202011636439.5', 1609344000, 'CN114038888A', 1644508800, 1644508800, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 15, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '917', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\f0b6d608fee84f7c8d3440dca099f0c3.png', NULL, NULL, 3, NULL, NULL, 13, NULL, NULL, NULL, 41726, 41728, 41727, 1);
INSERT INTO `os_patent` VALUES (24052, '背光模组及含有该背光模组的液晶显示器', '背光模组及含有该背光模组的液晶显示器', 'CN202253209U', '本实用新型公开一种背光模组及含有该背光模组的液晶显示器，该背光模组，包括背板、直下LED阵列、侧光LED阵列以及导光板，背板包括底板及侧板，导光板位于背板的侧板之间及底板上方，直下LED阵列设置在背板的底板上，且位于导光板中部的下方；侧光LED阵列设置在导光板的两侧，并与导光板的入光面相对，导光板的两端邻近侧光LED阵列处的出光面或底面设有若干用于散射光线的散光结构。本实用新型采用直下式与侧光式混合的背光模组，在导光板两端的出光面或底面设置若干散光结构，将导光板分为三个背光区域，通过导光板上散光结构以及LED驱动电路实现背光模组的分区显示控制，提高了背光模组的背光亮度的分区显示效果，降低了液晶模组功耗。', '本实用新型公开一种背光模组及含有该背光模组的液晶显示器，该背光模组，包括背板、直下LED阵列、侧光LED阵列以及导光板，背板包括底板及侧板，导光板位于背板的侧板之间及底板上方，直下LED阵列设置在背板的底板上，且位于导光板中部的下方；侧光LED阵列设置在导光板的两侧，并与导光板的入光面相对，导光板的两端邻近侧光LED阵列处的出光面或底面设有若干用于散射光线的散光结构。本实用新型采用直下式与侧光式混合的背光模组，在导光板两端的出光面或底面设置若干散光结构，将导光板分为三个背光区域，通过导光板上散光结构以及LED驱动电路实现背光模组的分区显示控制，提高了背光模组的背光亮度的分区显示效果，降低了液晶模组功耗。', 'CN201120393253.1', 1318521600, 'CN202253209U', 1338307200, 0, NULL, 1338307200, '中国', NULL, NULL, NULL, NULL, 2, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 7, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 6, 6, NULL, NULL, 0, 14, 1, 5, 0, NULL, '918', NULL, NULL, NULL, NULL, 'CN104864311A | CN105676338A | CN106813164A | CN107422531A | CN107422531B | CN109725464A | CN109725464B | CN110007512A | CN110007512B | CN110488531A | CN112015006A | US10095061B2 | WO2017206290A1 | WO2018177279A1', NULL, 1, '\\20220510\\7988f9a9eab645cfa3ce30b55dbd56e1.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41729, 41731, 41730, 6);
INSERT INTO `os_patent` VALUES (24053, '一种反射式液晶显示器', '一种反射式液晶显示器', 'CN206610052U', '本实用新型涉及一种反射式液晶显示器，其特征在于，包括液晶面板，所述液晶面板的第一侧紧密贴合偏光片的第二侧，在所述偏光片第一侧的外部设置有用于提供均匀白光的前置光源，在所述液晶面板第二侧的外部设置有微纳结构层，所述微纳结构层反射来自所述前置光源的白光且将来自所述前置光源的白光转换成红、绿和蓝三色光。所述微纳结构层包括微纳结构反射板，在所述微纳结构反射板上靠近所述液晶面板的一侧间隔设置有多个金属突起，各所述金属突起反射来自所述前置光源的白光且将来自所述前置光源的白光转换成红、绿和蓝三色光。本实用新型能够提高光能利用率，制程简单，且能够实现全彩显示。', '本实用新型涉及一种反射式液晶显示器，其特征在于，包括液晶面板，所述液晶面板的第一侧紧密贴合偏光片的第二侧，在所述偏光片第一侧的外部设置有用于提供均匀白光的前置光源，在所述液晶面板第二侧的外部设置有微纳结构层，所述微纳结构层反射来自所述前置光源的白光且将来自所述前置光源的白光转换成红、绿和蓝三色光。所述微纳结构层包括微纳结构反射板，在所述微纳结构反射板上靠近所述液晶面板的一侧间隔设置有多个金属突起，各所述金属突起反射来自所述前置光源的白光且将来自所述前置光源的白光转换成红、绿和蓝三色光。本实用新型能够提高光能利用率，制程简单，且能够实现全彩显示。', 'CN201720381753.0', 1491926400, 'CN206610052U', 1509638400, 0, NULL, 1509638400, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 8, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 4, 4, 4, 0, NULL, '919', NULL, NULL, NULL, NULL, 'CN109782477A | CN110082950A | CN110082950B | WO2020233594A1', NULL, 1, '\\20220510\\993c446157ad4876957eed5e18adee7d.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41732, 41734, 41733, 1);
INSERT INTO `os_patent` VALUES (24054, '发光二极管及使用所述发光二极管的背光模组', '发光二极管及使用所述发光二极管的背光模组', 'CN208738291U', '提供一发光二极管，包括：一基板；一第一半导体层，设置于所述基板上；一发光层，设置于所述第一半导体层的第一部分上；一第二半导体层，设置于所述发光层上；一第一电极，设置于所述第一半导体层的第二部分上，所述第一部分与所述第二部分不重迭；以及一第二电极，设置于所述第二半导体层上；其中所述第一电极的厚度大于所述第二电极的厚度。还提供包含所述发光二极管的背光模组。', '提供一发光二极管，包括：一基板；一第一半导体层，设置于所述基板上；一发光层，设置于所述第一半导体层的第一部分上；一第二半导体层，设置于所述发光层上；一第一电极，设置于所述第一半导体层的第二部分上，所述第一部分与所述第二部分不重迭；以及一第二电极，设置于所述第二半导体层上；其中所述第一电极的厚度大于所述第二电极的厚度。还提供包含所述发光二极管的背光模组。', 'CN201821461364.X', 1536163200, 'CN208738291U', 1554998400, 0, NULL, 1554998400, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 1, 0, 0, 0, NULL, '911', NULL, NULL, NULL, NULL, 'WO2020047913A1', NULL, 1, '\\20220510\\77b12966742a4987b9d3e14fcc169188.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41735, 40636, 41736, 5);
INSERT INTO `os_patent` VALUES (24055, '背光装置及显示装置', '背光装置及显示装置', 'CN208904015U', '一种背光装置及显示装置，所述背光装置包括一基板、一发光二极管层以及一带通滤光片。所述发光二极管层设于所述基板上，并包括多个间隔设置的发光二极管芯片。所述带通滤光片设于所述发光二极管层上，其中所述带通滤光片在对应所述发光二极管芯片的位置上设有开孔。', '一种背光装置及显示装置，所述背光装置包括一基板、一发光二极管层以及一带通滤光片。所述发光二极管层设于所述基板上，并包括多个间隔设置的发光二极管芯片。所述带通滤光片设于所述发光二极管层上，其中所述带通滤光片在对应所述发光二极管芯片的位置上设有开孔。', 'CN201821611759.3', 1538236800, 'CN208904015U', 1558627200, 0, NULL, 1558627200, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 7, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '911', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\89fef4e169974ebe841cc52c35100b2b.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 41737, 41739, 41738, 1);
INSERT INTO `os_patent` VALUES (24056, '背光模块及液晶显示器', '背光模块及液晶显示器', 'CN209182612U', '本实用新型公开一种背光模块及液晶显示器。所述背光模块包含：一基板、多个焊盘及一反射图案层。所述多个焊盘散布在所述基板上且各具有一焊盘尺寸。所述反射图案层覆盖所述多个焊盘及所述基板，其中所述反射图案层具有多个开口，所述多个开口的位置对应所述多个焊盘的位置，且所述多个开口各具有一开口尺寸，其中所述开口尺寸小于对应的所述焊盘尺寸。所述背光模块通过在反射图案层设有对应多个焊盘的位置的多个开口，并且所述多个开口的开口尺寸小于所述多个焊盘的焊盘尺寸，进而提升反射图案层占所述基板的比例，故可提升亮度。', '本实用新型公开一种背光模块及液晶显示器。所述背光模块包含：一基板、多个焊盘及一反射图案层。所述多个焊盘散布在所述基板上且各具有一焊盘尺寸。所述反射图案层覆盖所述多个焊盘及所述基板，其中所述反射图案层具有多个开口，所述多个开口的位置对应所述多个焊盘的位置，且所述多个开口各具有一开口尺寸，其中所述开口尺寸小于对应的所述焊盘尺寸。所述背光模块通过在反射图案层设有对应多个焊盘的位置的多个开口，并且所述多个开口的开口尺寸小于所述多个焊盘的焊盘尺寸，进而提升反射图案层占所述基板的比例，故可提升亮度。', 'CN201821791408.5', 1540915200, 'CN209182612U', 1564416000, 0, NULL, 1564416000, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 9, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '911', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\e96e4a515cfd4c9fbfe861b1cbf440f6.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 41740, 40663, 41741, 4);
INSERT INTO `os_patent` VALUES (24057, '薄型背光模组', '薄型背光模组', 'CN209265141U', '本实用新型提供一种薄型背光模组，包括驱动基板、多个发光源、荧光层及多个粒子微结构。每一所述发光源阵列布设于所述驱动基板上。所述荧光层表面设置有多个表面微结构，每一所述表面微结构对应每一所述发光源。每一所述粒子微结构对应每一所述表面微结构设置，其中所述粒子微结构与所述表面微结构共同构成散设所述发光源光线的引导层。借此，实现更小的混光距离与达到超薄的背光模组厚度。', '本实用新型提供一种薄型背光模组，包括驱动基板、多个发光源、荧光层及多个粒子微结构。每一所述发光源阵列布设于所述驱动基板上。所述荧光层表面设置有多个表面微结构，每一所述表面微结构对应每一所述发光源。每一所述粒子微结构对应每一所述表面微结构设置，其中所述粒子微结构与所述表面微结构共同构成散设所述发光源光线的引导层。借此，实现更小的混光距离与达到超薄的背光模组厚度。', 'CN201821982568.8', 1543334400, 'CN209265141U', 1565884800, 0, NULL, 1565884800, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 7, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 1, 1, 1, 0, NULL, '911', NULL, NULL, NULL, NULL, 'CN110985902A', NULL, 1, '\\20220510\\cdad7ff235b54d0ab1372256a3c2cee0.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 41742, 41744, 41743, 1);
INSERT INTO `os_patent` VALUES (24058, '背光模组及采用该背光模组的显示装置', '背光模组及采用该背光模组的显示装置', 'CN209446925U', '本实用新型提供一种背光模组及采用该背光模组的显示装置。本实用新型的优点在于，能够有效地优化LED灯影，提升Mini‑LED整体显示效果；在尽量不增加模组厚度，减少模组功耗损失的前提下，优化Mini‑LED灯影问题；在相同厚度下，可实现LED减灯设计，降低中、大尺寸Mini‑LED模组成本。', '本实用新型提供一种背光模组及采用该背光模组的显示装置。本实用新型的优点在于，能够有效地优化LED灯影，提升Mini‑LED整体显示效果；在尽量不增加模组厚度，减少模组功耗损失的前提下，优化Mini‑LED灯影问题；在相同厚度下，可实现LED减灯设计，降低中、大尺寸Mini‑LED模组成本。', 'CN201822017257.4', 1543507200, 'CN209446925U', 1569513600, 0, NULL, 1569513600, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '911', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\8aa34c9b8a94432f87e7dbda7d6627d1.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41745, 40672, 41746, 5);
INSERT INTO `os_patent` VALUES (24059, '显示装置', '显示装置', 'CN210894768U', '本申请提出了一种显示装置，包括显示面板及背光模组。该背光模组包括背光单元，开设有背光孔；导光环，设于该背光孔内侧，该导光环包括入光面和出光面，该导光环用于将进入该导光环中的光束导向该背光孔对应的显示面板区域；光源部件，用于为该导光环提供光源。本申请通过在摄像模组对应的区域设置一背光孔及在该背光孔内设置一导光环，使得光源部件提供的光源能通过导光环导向该背光孔对应的显示面板区域。使得当该摄像模组中摄像头启动时，该光源关闭，当该摄像模组中的摄像头不启动时，该光源开启或关闭，故能够使该显示面板上的通孔或盲孔重新具有显示能力，且依旧维持摄像模组的影像质量。', '本申请提出了一种显示装置，包括显示面板及背光模组。该背光模组包括背光单元，开设有背光孔；导光环，设于该背光孔内侧，该导光环包括入光面和出光面，该导光环用于将进入该导光环中的光束导向该背光孔对应的显示面板区域；光源部件，用于为该导光环提供光源。本申请通过在摄像模组对应的区域设置一背光孔及在该背光孔内设置一导光环，使得光源部件提供的光源能通过导光环导向该背光孔对应的显示面板区域。使得当该摄像模组中摄像头启动时，该光源关闭，当该摄像模组中的摄像头不启动时，该光源开启或关闭，故能够使该显示面板上的通孔或盲孔重新具有显示能力，且依旧维持摄像模组的影像质量。', 'CN201921855432.5', 1572364800, 'CN210894768U', 1593446400, 0, NULL, 1593446400, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 20, 3, 0, 0, 0, NULL, NULL, NULL, '201910387457.5 | 201910686797.8 | 201910693204.0', 'CN | CN | CN', 1557417600, 2, 10, NULL, NULL, 0, 3, 3, 3, 0, NULL, '916', NULL, NULL, NULL, NULL, 'CN111752043A | CN113889053A | WO2022007053A1', NULL, 1, '\\20220510\\b739b58c2bfe43e7b5c5cf5aac70c229.png', NULL, NULL, 1, NULL, NULL, 17, NULL, NULL, NULL, 41747, 41749, 41748, 10);
INSERT INTO `os_patent` VALUES (24060, '一种显示面板及显示装置', '一种显示面板及显示装置', 'CN210894924U', '本实用新型提供一种显示面板及显示装置，显示面板包括显示单元和背光模块；其中，显示面板包括主显示区和功能附加区，所述背光模块包括为主显示区提供光源的第一光源块和为所述功能附加区提供光源的第二光源块。通过在与电子元件相对的区域设置功能附加区，可以根据需求对功能附加区进行透明态和画面显示态的切换，可实现在不破坏屏幕完整性，又不引入新的机械结构的前提下，实现全面屏显示效果，同时对为功能附加区提供光照的第二光源块的位置进行设计，使得功能附加区在位于显示面板上任意位置时均具有良好的显示和透光功能。', '本实用新型提供一种显示面板及显示装置，显示面板包括显示单元和背光模块；其中，显示面板包括主显示区和功能附加区，所述背光模块包括为主显示区提供光源的第一光源块和为所述功能附加区提供光源的第二光源块。通过在与电子元件相对的区域设置功能附加区，可以根据需求对功能附加区进行透明态和画面显示态的切换，可实现在不破坏屏幕完整性，又不引入新的机械结构的前提下，实现全面屏显示效果，同时对为功能附加区提供光照的第二光源块的位置进行设计，使得功能附加区在位于显示面板上任意位置时均具有良好的显示和透光功能。', 'CN201921805126.0', 1571846400, 'CN210894924U', 1593446400, 0, NULL, 1593446400, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 22, 4, 0, 0, 0, NULL, NULL, NULL, '201910232120.7 | 201910239505.6 | 201910449306.8', 'CN | CN | CN', 1553529600, 9, 14, NULL, NULL, 0, 1, 1, 1, 0, NULL, '916', NULL, NULL, NULL, NULL, 'CN112068356A', NULL, 1, '\\20220510\\8b3a1f1596b74e7ca1fb97ae90e0a052.png', NULL, NULL, 1, NULL, NULL, 16, NULL, NULL, NULL, 41750, 41752, 41751, 14);
INSERT INTO `os_patent` VALUES (24061, '一种彩膜基板和显示面板', '一种彩膜基板和显示面板', 'CN212276177U', '本申请提供一种彩膜基板和显示面板，该彩膜基板包括第一像素区域和邻近第一像素区域的第二像素区域，彩膜基板还包括：基底；多个Micro LED发光单元，对应第一像素区域设置于基底的一侧，其中，多个Micro LED发光单元之间设有透光区；彩色色阻，对应第二像素区域设于基底的相对另一侧。本申请通过在彩膜基板上对应第一像素区域设置Micro LED发光单元，从而解决了在LCD屏中光学式传感器与光学显示无法在空间上重合的问题，进而使LCD屏能够满足人们对全面屏的极致需求。', '本申请提供一种彩膜基板和显示面板，该彩膜基板包括第一像素区域和邻近第一像素区域的第二像素区域，彩膜基板还包括：基底；多个Micro LED发光单元，对应第一像素区域设置于基底的一侧，其中，多个Micro LED发光单元之间设有透光区；彩色色阻，对应第二像素区域设于基底的相对另一侧。本申请通过在彩膜基板上对应第一像素区域设置Micro LED发光单元，从而解决了在LCD屏中光学式传感器与光学显示无法在空间上重合的问题，进而使LCD屏能够满足人们对全面屏的极致需求。', 'CN202020974236.6', 1590940800, 'CN212276177U', 1609430400, 0, NULL, 1609430400, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 14, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 1, 1, 1, 0, NULL, '916', NULL, NULL, NULL, NULL, 'CN112951106A', NULL, 1, '\\20220510\\b1e097772f6840debf6a981cd2413762.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41753, 41158, 41754, 3);
INSERT INTO `os_patent` VALUES (24062, '一种彩膜基板、显示面板、显示装置', '一种彩膜基板、显示面板、显示装置', 'CN212276178U', '本申请提供一种彩膜基板、显示面板、显示装置，该彩膜基板包括第一像素区域和邻近第一像素区域的第二像素区域，彩膜基板还包括：基底；Micro LED发光单元，对应第一像素区域设置于基底上；平坦层，设置于Micro LED发光单元以及基底上；彩色色阻，对应第二像素区域设于平坦层上。本申请通过在彩膜基板上对应第一像素区域设置Micro LED发光单元，从而解决了在LCD屏中光学式传感器与光学显示无法在空间上重合的问题，进而使LCD屏能够满足人们对全面屏的极致需求。', '本申请提供一种彩膜基板、显示面板、显示装置，该彩膜基板包括第一像素区域和邻近第一像素区域的第二像素区域，彩膜基板还包括：基底；Micro LED发光单元，对应第一像素区域设置于基底上；平坦层，设置于Micro LED发光单元以及基底上；彩色色阻，对应第二像素区域设于平坦层上。本申请通过在彩膜基板上对应第一像素区域设置Micro LED发光单元，从而解决了在LCD屏中光学式传感器与光学显示无法在空间上重合的问题，进而使LCD屏能够满足人们对全面屏的极致需求。', 'CN202021041312.4', 1591545600, 'CN212276178U', 1609430400, 0, NULL, 1609430400, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 16, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 1, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, 'WO2021248783A1', NULL, 1, '\\20220510\\edc76f4d9f444636813b7dca10188730.png', NULL, NULL, 1, NULL, NULL, 15, NULL, NULL, NULL, 41755, 41161, 41756, 3);
INSERT INTO `os_patent` VALUES (24063, '一种显示面板及显示装置', '一种显示面板及显示装置', 'CN212276740U', '本实用新型提供一种显示面板及显示装置。显示面板包括多个像素单元和功能元件。每个像素单元包括子像素，子像素包括第一Micro LED芯片，在俯视视角下，相邻两个第一Micro LED芯片之间设有间隙。功能元件设置于所述间隙处。其中所述功能元件的功能与所述子像素的显示功能不同。通过采用极小尺寸的Micro LED芯片作为基本子像素，从而在Micro LED子像素空间中预留一定的功能集成区，用于承接功能元件。功能元件包括通讯天线、生物识别、储能电池、存储单元、逻辑电路、摄像头、压力检测等发射与传感单元。以提高显示面板的集成度，提升面板附加值，节省整机空间。', '本实用新型提供一种显示面板及显示装置。显示面板包括多个像素单元和功能元件。每个像素单元包括子像素，子像素包括第一Micro LED芯片，在俯视视角下，相邻两个第一Micro LED芯片之间设有间隙。功能元件设置于所述间隙处。其中所述功能元件的功能与所述子像素的显示功能不同。通过采用极小尺寸的Micro LED芯片作为基本子像素，从而在Micro LED子像素空间中预留一定的功能集成区，用于承接功能元件。功能元件包括通讯天线、生物识别、储能电池、存储单元、逻辑电路、摄像头、压力检测等发射与传感单元。以提高显示面板的集成度，提升面板附加值，节省整机空间。', 'CN202021116700.4', 1592236800, 'CN212276740U', 1609430400, 0, NULL, 1609430400, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 19, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\91e371fc11484d6994d3aaea714935dc.png', NULL, NULL, 1, NULL, NULL, 16, NULL, NULL, NULL, 41757, 41182, 41758, 3);
INSERT INTO `os_patent` VALUES (24064, '像素驱动电路及显示面板', '像素驱动电路及显示面板', 'CN212365460U', '本申请公开了一种像素驱动电路及显示面板，所述像素驱动电路包括：发光器件、驱动晶体管以及补偿模块；所述补偿模块至少包括：初始化晶体管及补偿晶体管；所述初始化晶体管用于响应第一扫描信号并将电位可变信号传输至所述驱动晶体管的栅极，初始化所述驱动晶体管的栅极电压；所述补偿晶体管用于响应补偿控制信号并将具有补偿阈值电压的数据信号传输至所述驱动晶体管的栅极；其中，所述初始化晶体管与所述补偿晶体管的类型不同；所述电位可变信号在发光阶段动态补偿所述驱动晶体管的栅极电压，以在发光阶段维持驱动晶体管的栅极电压稳定，降低驱动晶体管的源极或漏极对栅极电压的影响，改善显示面板的显示效果。', '本申请公开了一种像素驱动电路及显示面板，所述像素驱动电路包括：发光器件、驱动晶体管以及补偿模块；所述补偿模块至少包括：初始化晶体管及补偿晶体管；所述初始化晶体管用于响应第一扫描信号并将电位可变信号传输至所述驱动晶体管的栅极，初始化所述驱动晶体管的栅极电压；所述补偿晶体管用于响应补偿控制信号并将具有补偿阈值电压的数据信号传输至所述驱动晶体管的栅极；其中，所述初始化晶体管与所述补偿晶体管的类型不同；所述电位可变信号在发光阶段动态补偿所述驱动晶体管的栅极电压，以在发光阶段维持驱动晶体管的栅极电压稳定，降低驱动晶体管的源极或漏极对栅极电压的影响，改善显示面板的显示效果。', 'CN202021425474.8', 1594915200, 'CN212365460U', 1610640000, 0, NULL, 1610640000, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 22, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '916', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220510\\d96dab9c305b4f7dad4eb4da21d35871.png', NULL, NULL, 1, NULL, NULL, 18, NULL, NULL, NULL, 41759, 41761, 41760, 1);
INSERT INTO `os_patent` VALUES (24065, '一种用于清洁口腔的清洁装置', '一种用于清洁口腔的清洁装置', 'CN213641333U', '本实用新型公开了一种用于清洁口腔的清洁装置，属于牙具技术领域。一种用于清洁口腔的清洁装置，包括放置盒，所述放置盒的内部固定安装有水箱，所述水箱的一侧面固定连接有阀门，所述阀门的一侧面固定连接有输水管，所述输水管的另一端固定连接有伸缩握杆，所述放置盒的上表面开设有放置槽，所述伸缩握杆的内部固定连接有送水管，所述送水管的一端固定连接有连接管；本实用新型通过拿起伸缩握杆，然后通过启动第一微型电机、第二微型电机和第三微型电机进行转动，然后带动第一转动轴、第二转动轴和第三转动轴进行转动，进而使第一清洁刷、第二清洁刷和第三清洁刷开始转动，最后对牙齿进行清洗，进而使清洗的更加干净。', '本实用新型公开了一种用于清洁口腔的清洁装置，属于牙具技术领域。一种用于清洁口腔的清洁装置，包括放置盒，所述放置盒的内部固定安装有水箱，所述水箱的一侧面固定连接有阀门，所述阀门的一侧面固定连接有输水管，所述输水管的另一端固定连接有伸缩握杆，所述放置盒的上表面开设有放置槽，所述伸缩握杆的内部固定连接有送水管，所述送水管的一端固定连接有连接管；本实用新型通过拿起伸缩握杆，然后通过启动第一微型电机、第二微型电机和第三微型电机进行转动，然后带动第一转动轴、第二转动轴和第三转动轴进行转动，进而使第一清洁刷、第二清洁刷和第三清洁刷开始转动，最后对牙齿进行清洗，进而使清洗的更加干净。', 'CN202022434929.9', 1603814400, 'CN213641333U', 1625760000, 0, NULL, 1625760000, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 7, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '920', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220609\\3cece2a48ef440d7b1264d2a0cd50145.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 41762, 41764, 41763, 1);
INSERT INTO `os_patent` VALUES (24066, '一种洗牙器壳身气压测试治具', '一种洗牙器壳身气压测试治具', 'CN213658463U', '本实用新型提供一种洗牙器壳身气压测试治具，包括底座、气缸A安装板、气缸A、推板、上连接板、上硅胶座、多根支撑杆、下连接板、下硅胶座，气缸A的动力输出端连接有推杆，推杆与推板连接，上连接板与推板连接，上硅胶座与上连接板的下表面连接，上硅胶座的下表面设置有形状与待测壳身形状对应的上让位槽，上让位槽内开设有气孔，气孔通过气管贯穿上连接板与气源连接，气源连接有控制装置；下连接板设置在底座的上表面并且位置与上硅胶座对应，下硅胶座设置在下连接板的上表面，下硅胶座的上表面开设有形状与待侧壳身形状对应的下让位槽，下让位槽内围绕中心位置设置有凸柱。本实用新型的有益效果是：测试准确性高，并且提升了测试效率。', '本实用新型提供一种洗牙器壳身气压测试治具，包括底座、气缸A安装板、气缸A、推板、上连接板、上硅胶座、多根支撑杆、下连接板、下硅胶座，气缸A的动力输出端连接有推杆，推杆与推板连接，上连接板与推板连接，上硅胶座与上连接板的下表面连接，上硅胶座的下表面设置有形状与待测壳身形状对应的上让位槽，上让位槽内开设有气孔，气孔通过气管贯穿上连接板与气源连接，气源连接有控制装置；下连接板设置在底座的上表面并且位置与上硅胶座对应，下硅胶座设置在下连接板的上表面，下硅胶座的上表面开设有形状与待侧壳身形状对应的下让位槽，下让位槽内围绕中心位置设置有凸柱。本实用新型的有益效果是：测试准确性高，并且提升了测试效率。', 'CN202022113815.4', 1600876800, 'CN213658463U', 1625760000, 0, NULL, 1625760000, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 7, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '921', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220609\\e613d5bc034a4360a1f8a9da1217f118.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 41765, 41767, 41766, 1);
INSERT INTO `os_patent` VALUES (24067, '一种水牙线口腔清洁器', '一种水牙线口腔清洁器', 'CN111494040B', '本发明公开了一种水牙线口腔清洁器，其技术方案要点是：包括组装为一体的第一固定筒和第二固定筒，所述第一固定筒内固定有水泵，所述水泵的进水端连通固定有通向所述第二固定筒内的第一管道，所述水泵的出水端连通固定有第二管道，还包括：开设在所述第二固定筒顶部的注入孔，所述第二固定筒内设置有搅拌混合组件；固定在所述第一固定筒顶部的第三固定筒；拆卸连接在所述第二管道端部的喷水软管；设置在所述喷水软管上的用于控制喷水软管角度的角度控制组件；用于保持使用者嘴部保持扩张状态的嘴部扩张组件；本装置具有方便配置清洗溶液、方便对嘴部进行扩张、方便调整清洗角度和进行牙线清洗的优点。', '本发明公开了一种水牙线口腔清洁器，其技术方案要点是：包括组装为一体的第一固定筒和第二固定筒，所述第一固定筒内固定有水泵，所述水泵的进水端连通固定有通向所述第二固定筒内的第一管道，所述水泵的出水端连通固定有第二管道，还包括：开设在所述第二固定筒顶部的注入孔，所述第二固定筒内设置有搅拌混合组件；固定在所述第一固定筒顶部的第三固定筒；拆卸连接在所述第二管道端部的喷水软管；设置在所述喷水软管上的用于控制喷水软管角度的角度控制组件；用于保持使用者嘴部保持扩张状态的嘴部扩张组件；本装置具有方便配置清洗溶液、方便对嘴部进行扩张、方便调整清洗角度和进行牙线清洗的优点。', 'CN202010262112.X', 1586102400, 'CN111494040B', 1625760000, 1596729600, NULL, 1625760000, '中国', NULL, NULL, NULL, NULL, 3, 4, NULL, NULL, NULL, NULL, 'B', NULL, NULL, 13, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 2, 2, NULL, NULL, 7, 0, 0, 0, 0, NULL, NULL, NULL, '陈本耀', NULL, 'CN102920519A | CN103690259A | CN105963039A | CN109674552A | CN110801295A | US20130165828A1 | US20190105139A1', NULL, NULL, 1, '\\20220609\\40027a48428e46db8e7cf6d6ad16628e.png', NULL, NULL, 1, NULL, NULL, 8, NULL, NULL, NULL, 41768, 41770, 41769, 2);
INSERT INTO `os_patent` VALUES (24068, '一种具有检测功能的口腔清洁工具', '一种具有检测功能的口腔清洁工具', 'CN113080606A', '本发明涉及一种具有检测功能的口腔清洁工具，其解决了现有装置结构复杂、稳定性较差、检测对象较少的技术问题，其设有牙刷本体，牙刷本体上设有检测装置，检测装置设有微流控芯片。本发明可用于口腔清洁和检测。', '本发明涉及一种具有检测功能的口腔清洁工具，其解决了现有装置结构复杂、稳定性较差、检测对象较少的技术问题，其设有牙刷本体，牙刷本体上设有检测装置，检测装置设有微流控芯片。本发明可用于口腔清洁和检测。', 'CN202110557995.1', 1621526400, 'CN113080606A', 1625760000, 1625760000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 7, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 1, 0, 0, 0, 0, NULL, '922', NULL, NULL, NULL, 'CN104705996A', NULL, NULL, 1, '\\20220609\\9e3329ee31be4bb8a412f56187e86e74.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 41771, 41773, 41772, 1);
INSERT INTO `os_patent` VALUES (24069, '一种能排空管路残留水的洗牙器及存储介质', '一种能排空管路残留水的洗牙器及存储介质', 'CN113081352A', '本发明涉及个人清洁设备技术领域，具体来说是一种能排空管路残留水的洗牙器及存储介质，控制电路板根据输入指令控制所述的泵组件以第一工作模式或第二工作模式工作，所述的泵组件在所述的第一工作模式下以第一功率工作，所述的泵组件在所述的第二工作模式下以低于第一功率的第二功率工作，以将出水管路中的残留水排空。本发明独创地通过泵组件将出水管路内的残留水经由出水管路和喷嘴排出，从而，出水管路内不会残留有前次使用后所残留的液体，减少洗牙器内滋生细菌的风险，有助于保护用户的口腔健康。并且，对于可加热的洗牙器，出水管路内的未被加热的残留水能被事先排出，有助于提高用户使用时的使用体验。', '本发明涉及个人清洁设备技术领域，具体来说是一种能排空管路残留水的洗牙器及存储介质，控制电路板根据输入指令控制所述的泵组件以第一工作模式或第二工作模式工作，所述的泵组件在所述的第一工作模式下以第一功率工作，所述的泵组件在所述的第二工作模式下以低于第一功率的第二功率工作，以将出水管路中的残留水排空。本发明独创地通过泵组件将出水管路内的残留水经由出水管路和喷嘴排出，从而，出水管路内不会残留有前次使用后所残留的液体，减少洗牙器内滋生细菌的风险，有助于保护用户的口腔健康。并且，对于可加热的洗牙器，出水管路内的未被加热的残留水能被事先排出，有助于提高用户使用时的使用体验。', 'CN202110505261.9', 1620576000, 'CN113081352A', 1625760000, 1625760000, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 9, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 8, 0, 0, 0, 0, NULL, '923', NULL, NULL, NULL, 'CN106855351A | CN107106917A | CN111166519A | CN111544144A | CN211156404U | CN212816606U | CN213001459U | JP2019188035A', NULL, NULL, 1, '\\20220609\\035dc35d0e6b4f5f98ce6e5b73ce94da.png', NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41774, 41776, 41775, 1);
INSERT INTO `os_patent` VALUES (24070, '一种便携式电动冲牙器', '一种便携式电动冲牙器', 'CN213607078U', '本实用新型涉及冲牙器技术领域，特别是涉及一种便携式电动冲牙器，包括壳体，所述壳体内部设有与外部连通的储水腔、吸水组件、控制组件和出水组件，所述吸水组件包括延伸至所述储水腔内部的吸水管、与所述吸水管连接的进水嘴、与所述进水嘴连接的泵体，与所述泵体连接设有驱动电机和与所述驱动电机电性连接的蓄电池，所述控制组件包括与所述蓄电池和驱动电机分别电性连接的主控板、设于所述主控板上的主控芯片和与所述主控芯片电性连接的控制按钮，所述出水组件包括与所述泵体出水端连接的喷嘴，本实用新型结构紧凑，设计合理，便携方便。', '本实用新型涉及冲牙器技术领域，特别是涉及一种便携式电动冲牙器，包括壳体，所述壳体内部设有与外部连通的储水腔、吸水组件、控制组件和出水组件，所述吸水组件包括延伸至所述储水腔内部的吸水管、与所述吸水管连接的进水嘴、与所述进水嘴连接的泵体，与所述泵体连接设有驱动电机和与所述驱动电机电性连接的蓄电池，所述控制组件包括与所述蓄电池和驱动电机分别电性连接的主控板、设于所述主控板上的主控芯片和与所述主控芯片电性连接的控制按钮，所述出水组件包括与所述泵体出水端连接的喷嘴，本实用新型结构紧凑，设计合理，便携方便。', 'CN202022053304.8', 1600272000, 'CN213607078U', 1625500800, 0, NULL, 1625500800, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 8, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '924', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220609\\642be8fc6f574f1584a242663c7c8830.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 41777, 41779, 41778, 1);
INSERT INTO `os_patent` VALUES (24071, '一种新型洗牙器', '一种新型洗牙器', 'CN213607072U', '一种新型洗牙器，它涉及洗牙器技术领域。它包括：泵体；以及，装配于所述泵体上的喷嘴；所述泵体包括：壳体；装配于所述壳体内侧底部的电机；位于所述壳体内、且装配于所述电机输出端的齿轮；转动连接于所述壳体内壁的中心轴；依次转动连接于所述中心轴表面的传动齿轮、偏心轮；转动连接于所述偏心轮表面的拉杆；以及，装配于所述壳体顶部、与所述拉杆连接的弹性膜片；装配于所述弹性膜片上端的水泵上盖；所述水泵上盖的内部依次固定连接有进水单向阀、出水单向阀；所述喷嘴装配于所述出水单向阀上。采用上述技术方案，具有在使用过程中，液体的杂质不会磨损机械部件，使得密封性好、不会漏水、使用寿命长的优势。', '一种新型洗牙器，它涉及洗牙器技术领域。它包括：泵体；以及，装配于所述泵体上的喷嘴；所述泵体包括：壳体；装配于所述壳体内侧底部的电机；位于所述壳体内、且装配于所述电机输出端的齿轮；转动连接于所述壳体内壁的中心轴；依次转动连接于所述中心轴表面的传动齿轮、偏心轮；转动连接于所述偏心轮表面的拉杆；以及，装配于所述壳体顶部、与所述拉杆连接的弹性膜片；装配于所述弹性膜片上端的水泵上盖；所述水泵上盖的内部依次固定连接有进水单向阀、出水单向阀；所述喷嘴装配于所述出水单向阀上。采用上述技术方案，具有在使用过程中，液体的杂质不会磨损机械部件，使得密封性好、不会漏水、使用寿命长的优势。', 'CN202021382123.3', 1594656000, 'CN213607072U', 1625500800, 0, NULL, 1625500800, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 7, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '925', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220609\\009fd7e1868347bbb9e6b3623b018a96.png', NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 41780, 41782, 41781, 1);
INSERT INTO `os_patent` VALUES (24072, '一种用于磁力泵的隔离套', '一种用于磁力泵的隔离套', 'CN213628028U', '本实用新型公开的属于磁力泵技术领域，具体为一种用于磁力泵的隔离套，所述磁力泵本体的内腔固定设置有隔离套，所述隔离套的最内壁设置有密封层，所述密封层的外壁包裹有隔离层，所述隔离层的外壁包裹有防腐层，所述防腐层的外壁包裹有耐磨层，所述耐磨层的外壁包裹有防水层，该种用于磁力泵的隔离套，能够在具有良好的耐腐蚀性能的同时还具有较高的电阻率，密封性更为良好，耐磨性能俱佳，防水性能突出，大大提高了磁力泵的工作效率，结构简单，便于使用，成本较低。', '本实用新型公开的属于磁力泵技术领域，具体为一种用于磁力泵的隔离套，所述磁力泵本体的内腔固定设置有隔离套，所述隔离套的最内壁设置有密封层，所述密封层的外壁包裹有隔离层，所述隔离层的外壁包裹有防腐层，所述防腐层的外壁包裹有耐磨层，所述耐磨层的外壁包裹有防水层，该种用于磁力泵的隔离套，能够在具有良好的耐腐蚀性能的同时还具有较高的电阻率，密封性更为良好，耐磨性能俱佳，防水性能突出，大大提高了磁力泵的工作效率，结构简单，便于使用，成本较低。', 'CN202022580466.7', 1604937600, 'CN213628028U', 1625500800, 0, NULL, 1625500800, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 6, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '926', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220609\\9f638c5c4f9e4b399485c429e32370ab.png', NULL, NULL, 1, NULL, NULL, 6, NULL, NULL, NULL, 41783, 41785, 41784, 1);
INSERT INTO `os_patent` VALUES (24073, '一种电气两用磁耦合高压行星泵', '一种电气两用磁耦合高压行星泵', 'CN213627991U', '本实用新型公开了一种电气两用磁耦合高压行星泵，包括动力设备和行星转子泵，动力设备与行星转子泵通过磁耦合转动组件连接，磁耦合转动组件包括动力箱体、导磁体、隔离套和永磁体，导磁体通过轴承转动安装在动力箱体内，动力设备的动力输出端与导磁体的一侧面连接，隔离套的一端通过密封副安装在动力箱体的外侧面上，且隔离套部分位于动力箱体内并形成冷却腔，永磁体转动安装在隔离套内，偏心轴的一端安装在永磁体内，隔离套与行星转子泵的泵壳之间形成流体腔，偏心轴的另一端与转动安装在流体腔内的星型叶轮连接，该电气两用磁耦合高压行星泵的结构简单，高效实用，可对高浓度的粘稠液体抽取，极大的提高了设备的使用寿命和使用性能。', '本实用新型公开了一种电气两用磁耦合高压行星泵，包括动力设备和行星转子泵，动力设备与行星转子泵通过磁耦合转动组件连接，磁耦合转动组件包括动力箱体、导磁体、隔离套和永磁体，导磁体通过轴承转动安装在动力箱体内，动力设备的动力输出端与导磁体的一侧面连接，隔离套的一端通过密封副安装在动力箱体的外侧面上，且隔离套部分位于动力箱体内并形成冷却腔，永磁体转动安装在隔离套内，偏心轴的一端安装在永磁体内，隔离套与行星转子泵的泵壳之间形成流体腔，偏心轴的另一端与转动安装在流体腔内的星型叶轮连接，该电气两用磁耦合高压行星泵的结构简单，高效实用，可对高浓度的粘稠液体抽取，极大的提高了设备的使用寿命和使用性能。', 'CN202022433616.1', 1603814400, 'CN213627991U', 1625500800, 0, NULL, 1625500800, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 7, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '927', NULL, NULL, NULL, NULL, NULL, NULL, 1, '\\20220609\\c05a4f613b544bf1bd9d8a6f782f53a5.png', NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 41786, 41788, 41787, 1);
INSERT INTO `os_patent` VALUES (24074, '一种可消毒的冲牙器', '一种可消毒的冲牙器', 'CN213607071U', '本实用新型公开了一种可消毒的冲牙器，包括壳体组件、喷管组件、机芯组件、水罐组件，所述壳体组件设置有面板组件及线路板，面板组件安装在线路板上，机芯组件安装于壳体组件内，水罐组件通过拆卸式结构安装于壳体组件内并与进水阀组件连接。本实用新型有效杀毒，干净卫生，使用灵活，结构可靠，使用寿命长。', '本实用新型公开了一种可消毒的冲牙器，包括壳体组件、喷管组件、机芯组件、水罐组件，所述壳体组件设置有面板组件及线路板，面板组件安装在线路板上，机芯组件安装于壳体组件内，水罐组件通过拆卸式结构安装于壳体组件内并与进水阀组件连接。本实用新型有效杀毒，干净卫生，使用灵活，结构可靠，使用寿命长。', 'CN202020876313.4', 1590076800, 'CN213607071U', 1625500800, 0, NULL, 1625500800, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 7, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '928', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 41789, 41791, 41790, 1);
INSERT INTO `os_patent` VALUES (24075, '电动冲牙器', '电动冲牙器', 'CN213588560U', '本实用新型涉及电动冲牙器，应用于冲洗口腔牙齿上的食物残留。它包括喷管、握手部位、控制线路；其特征是握手部位带手触金属环或片；手触金属环或片同控制线路一极电连接；位于喷管末端的喷嘴是金属材料，喷嘴同控制线路另一极电连接。具有即时喷水、准时停止喷水，节约了用水，提高了水箱中储水量的利用率。控制电路中无需设置电源开关，减少了用户的操作环节，体现出更佳的人性化设计的优点。', '本实用新型涉及电动冲牙器，应用于冲洗口腔牙齿上的食物残留。它包括喷管、握手部位、控制线路；其特征是握手部位带手触金属环或片；手触金属环或片同控制线路一极电连接；位于喷管末端的喷嘴是金属材料，喷嘴同控制线路另一极电连接。具有即时喷水、准时停止喷水，节约了用水，提高了水箱中储水量的利用率。控制电路中无需设置电源开关，减少了用户的操作环节，体现出更佳的人性化设计的优点。', 'CN202022070880.3', 1600531200, 'CN213588560U', 1625155200, 0, NULL, 1625155200, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 7, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 2, NULL, NULL, NULL, 41792, 41794, 41793, 1);
INSERT INTO `os_patent` VALUES (24076, '支撑结构', '支撑结构', 'CN213588563U', '本实用新型提供一种支撑结构,其支撑作往复运动的驱动轴，该支撑结构(20)包括支撑结构内固定圈(23)、至少一个支撑结构弹性件(22)及支撑结构外固定圈(21、51)，支撑结构内固定圈(23)被紧固于驱动轴(10)上，支撑结构外固定圈(21)被紧固于装置下壳体的内壁上，支撑结构弹性件(22)分布于支撑结构的外固定圈(21)和内固定圈(23)之间，在支撑结构弹性件(22)的垂直于驱动轴(10)径向的横截面上沿垂直于驱动力(F1)方向的宽度(b1)大于该支撑结构弹性件(22)的垂直于驱动轴(10)径向的横截面上沿平行于驱动力(F1)方向的厚度(t1)的三倍。该支撑结构具有低噪音，低能量损耗，低成本，且结构简单，适于批量生产的优点。', '本实用新型提供一种支撑结构,其支撑作往复运动的驱动轴，该支撑结构(20)包括支撑结构内固定圈(23)、至少一个支撑结构弹性件(22)及支撑结构外固定圈(21、51)，支撑结构内固定圈(23)被紧固于驱动轴(10)上，支撑结构外固定圈(21)被紧固于装置下壳体的内壁上，支撑结构弹性件(22)分布于支撑结构的外固定圈(21)和内固定圈(23)之间，在支撑结构弹性件(22)的垂直于驱动轴(10)径向的横截面上沿垂直于驱动力(F1)方向的宽度(b1)大于该支撑结构弹性件(22)的垂直于驱动轴(10)径向的横截面上沿平行于驱动力(F1)方向的厚度(t1)的三倍。该支撑结构具有低噪音，低能量损耗，低成本，且结构简单，适于批量生产的优点。', 'CN202021826082.2', 1598457600, 'CN213588563U', 1625155200, 0, NULL, 1625155200, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 24, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '929', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 15, NULL, NULL, NULL, 41795, 41797, 41796, 1);
INSERT INTO `os_patent` VALUES (24077, '一种洗牙器的自动脱开喷嘴', '一种洗牙器的自动脱开喷嘴', 'CN213588556U', '本实用新型公开一种洗牙器的自动脱开喷嘴，包括：机身；活动盖，活动盖活动设于机身的一端，活动盖与机身的一端卡扣配合；第一弹簧，第一弹簧的两端分别抵设于机身的一端与活动盖之间，第一弹簧驱使活动盖沿机身的长度方向活动；喷嘴锁块，喷嘴锁块活动设于机身内，喷嘴锁块的一端伸出机身的一侧；第二弹簧，第二弹簧的两端分别抵设于喷嘴锁块的另一端与机身的另一侧之间，第二弹簧驱使喷嘴锁块沿机身的宽度方向活动；喷嘴，喷嘴的一端依次穿过活动盖、机身的一端和喷嘴锁块，喷嘴锁块与喷嘴的外周沿机身的长度方向锁定配合，活动盖与喷嘴的外周沿机身的长度方向限位配合。本实用新型方便取出喷嘴，不会卡滞。', '本实用新型公开一种洗牙器的自动脱开喷嘴，包括：机身；活动盖，活动盖活动设于机身的一端，活动盖与机身的一端卡扣配合；第一弹簧，第一弹簧的两端分别抵设于机身的一端与活动盖之间，第一弹簧驱使活动盖沿机身的长度方向活动；喷嘴锁块，喷嘴锁块活动设于机身内，喷嘴锁块的一端伸出机身的一侧；第二弹簧，第二弹簧的两端分别抵设于喷嘴锁块的另一端与机身的另一侧之间，第二弹簧驱使喷嘴锁块沿机身的宽度方向活动；喷嘴，喷嘴的一端依次穿过活动盖、机身的一端和喷嘴锁块，喷嘴锁块与喷嘴的外周沿机身的长度方向锁定配合，活动盖与喷嘴的外周沿机身的长度方向限位配合。本实用新型方便取出喷嘴，不会卡滞。', 'CN202020603817.9', 1587398400, 'CN213588556U', 1625155200, 0, NULL, 1625155200, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 12, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '930', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41798, 41800, 41799, 1);
INSERT INTO `os_patent` VALUES (24078, '可自动调节水压的冲牙器以及其应用的水压自动调节方法', '可自动调节水压的冲牙器以及其应用的水压自动调节方法', 'CN113057755A', '本发明的可自动调节水压的冲牙器以及其应用的水压自动调节方法，包括：冲牙器喷头；电阻应变片，与所述冲牙器喷头连接，用于反馈所述冲牙器喷头的形变量，并相应的改变电阻值；控制装置，连接所述电阻应变片，用于实时检测所述电阻应变片的电阻值，并相应的自动调节所述冲牙器的水压。本发明在用户使用不规范时，例如将冲牙器喷头紧紧的顶在牙齿或者牙缝上时，通过电阻应变片来反馈由于使用不规范造成的冲牙器喷头的形变量，并相应的改变电阻值，再通过检测冲牙器喷头上电阻应变片的阻值来调整冲牙器的水压；该方案可以使用户在冲牙器使用过程中更安全便携，也通过水压变化提示用户保持一个良好的冲牙习惯。', '本发明的可自动调节水压的冲牙器以及其应用的水压自动调节方法，包括：冲牙器喷头；电阻应变片，与所述冲牙器喷头连接，用于反馈所述冲牙器喷头的形变量，并相应的改变电阻值；控制装置，连接所述电阻应变片，用于实时检测所述电阻应变片的电阻值，并相应的自动调节所述冲牙器的水压。本发明在用户使用不规范时，例如将冲牙器喷头紧紧的顶在牙齿或者牙缝上时，通过电阻应变片来反馈由于使用不规范造成的冲牙器喷头的形变量，并相应的改变电阻值，再通过检测冲牙器喷头上电阻应变片的阻值来调整冲牙器的水压；该方案可以使用户在冲牙器使用过程中更安全便携，也通过水压变化提示用户保持一个良好的冲牙习惯。', 'CN202110297898.3', 1616083200, 'CN113057755A', 1625155200, 1625155200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 16, 5, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '931', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41801, 41803, 41802, 1);
INSERT INTO `os_patent` VALUES (24079, '冲牙器的输出控制方法及系统', '冲牙器的输出控制方法及系统', 'CN113057754A', '本发明实施例公开了一种冲牙器的输出控制方法及系统，该方法包括：向所述驱动模块发送脉冲宽度调制信号以控制所述电机的转动速度；获取当前挡位下的目标电压值，并根据预设时间间隔获取所述电源模块的输入电压值；根据所述目标电压值与所述输入电压值的比值，调节所述脉冲宽度调制信号的占空比；根据调节后的脉冲宽度调制信号控制所述电机的端电压值。通过上述方法，能够根据电源模块的输入电压值变化实时地更新脉冲宽度调制信号的占空比，使电机两端的电压达到稳定范围，从而使得冲牙器能够有稳定的水压输出，提升了冲牙器的洁牙效果，并改善了用户使用体验。', '本发明实施例公开了一种冲牙器的输出控制方法及系统，该方法包括：向所述驱动模块发送脉冲宽度调制信号以控制所述电机的转动速度；获取当前挡位下的目标电压值，并根据预设时间间隔获取所述电源模块的输入电压值；根据所述目标电压值与所述输入电压值的比值，调节所述脉冲宽度调制信号的占空比；根据调节后的脉冲宽度调制信号控制所述电机的端电压值。通过上述方法，能够根据电源模块的输入电压值变化实时地更新脉冲宽度调制信号的占空比，使电机两端的电压达到稳定范围，从而使得冲牙器能够有稳定的水压输出，提升了冲牙器的洁牙效果，并改善了用户使用体验。', 'CN202110283433.2', 1530547200, 'CN113057754A', 1625155200, 1625155200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 4, 4, NULL, NULL, 6, 0, 0, 0, 0, NULL, '932', NULL, NULL, NULL, 'CN101447757A | CN106253769A | CN106880416A | DE102017111982A1 | JP2010015317A | JP2011252585A', NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 41804, 41806, 41805, 4);
INSERT INTO `os_patent` VALUES (24080, '冲牙器控制电路、方法、存储介质及冲牙器', '冲牙器控制电路、方法、存储介质及冲牙器', 'CN113064366A', '本申请提供冲牙器控制电路、方法、存储介质及冲牙器，冲牙器喷头伸入口腔后，触摸开关打开PMOS管，电机开始运转，冲牙器喷头向外喷水，并可控制PWM信号的占空比来调节冲牙器喷头的出水量；在冲牙器喷头从口腔中移开后，触摸开关会关闭PMOS管，断开电机通路，冲牙器喷头不向外喷水。单片机检测到触摸开关关闭PMOS管后，关闭NMOS管，从而节省电量。本发明的技术方案检测冲牙器喷头是否放入口腔的技术方案均由硬件电路自己完成，无需控制芯片单片机再执行软件参与，所以反应速度非常快，与现有技术中先检测、再处理、再执行关闭喷水的方式相比，响应速度大大提升。', '本申请提供冲牙器控制电路、方法、存储介质及冲牙器，冲牙器喷头伸入口腔后，触摸开关打开PMOS管，电机开始运转，冲牙器喷头向外喷水，并可控制PWM信号的占空比来调节冲牙器喷头的出水量；在冲牙器喷头从口腔中移开后，触摸开关会关闭PMOS管，断开电机通路，冲牙器喷头不向外喷水。单片机检测到触摸开关关闭PMOS管后，关闭NMOS管，从而节省电量。本发明的技术方案检测冲牙器喷头是否放入口腔的技术方案均由硬件电路自己完成，无需控制芯片单片机再执行软件参与，所以反应速度非常快，与现有技术中先检测、再处理、再执行关闭喷水的方式相比，响应速度大大提升。', 'CN202110277313.1', 1615737600, 'CN113064366A', 1625155200, 1625155200, NULL, NULL, '中国', NULL, NULL, NULL, NULL, 1, 2, NULL, NULL, NULL, NULL, 'A', NULL, NULL, 11, 6, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 9, 0, 0, 0, 0, NULL, '931', NULL, NULL, NULL, 'CN106901859A | CN108378947A | CN108873760A | CN108969136A | CN110897745A | CN111297506A | CN111682811A | CN207912790U | CN207979804U', NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41807, 41809, 41808, 1);
INSERT INTO `os_patent` VALUES (24081, '一种洗牙器', '一种洗牙器', 'CN213552535U', '本实用新型公开了一种洗牙器，包括底座、安装于所述底座上的主体和水箱、以及用于连通所述主体与所述水箱的水管，所述底座上设有可收纳所述水管的腔体，所述腔体一侧设有供所述水管穿过的通孔；所述水管的一端与所述主体可拆卸连接，并且所述水管从所述主体开始依次穿过所述腔体以及所述通孔，直至另一端可拆卸地连接于所述水箱上。本实用新型的洗牙器实现水管的隐藏式放置、达到改善产品外观的效果，并且携带方便，大大提高了用户使用体验。', '本实用新型公开了一种洗牙器，包括底座、安装于所述底座上的主体和水箱、以及用于连通所述主体与所述水箱的水管，所述底座上设有可收纳所述水管的腔体，所述腔体一侧设有供所述水管穿过的通孔；所述水管的一端与所述主体可拆卸连接，并且所述水管从所述主体开始依次穿过所述腔体以及所述通孔，直至另一端可拆卸地连接于所述水箱上。本实用新型的洗牙器实现水管的隐藏式放置、达到改善产品外观的效果，并且携带方便，大大提高了用户使用体验。', 'CN202021802752.7', 1598371200, 'CN213552535U', 1624896000, 0, NULL, 1624896000, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 11, 5, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '933', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41810, 41812, 41811, 1);
INSERT INTO `os_patent` VALUES (24082, '喷头组件及冲牙器', '喷头组件及冲牙器', 'CN213552533U', '本实用新型涉及一种喷头组件及冲牙器。喷头组件包括：喷管，包括伸缩部，所述伸缩部的卡位端沿径向延伸形成卡位凸台，伸缩部侧壁的卡位凸起与卡位凸台沿伸缩部的轴向间隔设置；以及管座，包括内壁面与底壁面，内壁面与底壁面围设形成伸缩管道，管座的开口处沿径向朝内延伸形成嵌入部，伸缩部滑动设置于伸缩管道；喷头组件具有拉伸态及收缩态，当喷头组件处于拉伸态时，嵌入部位于卡位凸台及卡位凸起之间，且嵌入部的两侧分别抵接卡位凸台及卡位凸起；当喷头组件处于收缩态时，卡位端抵接底壁面。上述喷头组件，处于收缩态时占用空间小，携带方便。', '本实用新型涉及一种喷头组件及冲牙器。喷头组件包括：喷管，包括伸缩部，所述伸缩部的卡位端沿径向延伸形成卡位凸台，伸缩部侧壁的卡位凸起与卡位凸台沿伸缩部的轴向间隔设置；以及管座，包括内壁面与底壁面，内壁面与底壁面围设形成伸缩管道，管座的开口处沿径向朝内延伸形成嵌入部，伸缩部滑动设置于伸缩管道；喷头组件具有拉伸态及收缩态，当喷头组件处于拉伸态时，嵌入部位于卡位凸台及卡位凸起之间，且嵌入部的两侧分别抵接卡位凸台及卡位凸起；当喷头组件处于收缩态时，卡位端抵接底壁面。上述喷头组件，处于收缩态时占用空间小，携带方便。', 'CN202021367209.9', 1594569600, 'CN213552533U', 1624896000, 0, NULL, 1624896000, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 18, 6, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '917', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41813, 41815, 41814, 1);
INSERT INTO `os_patent` VALUES (24083, '一种冲牙器动力传动结构', '一种冲牙器动力传动结构', 'CN213575381U', '一种冲牙器动力传动结构，解决现有齿轮传动的冲牙器存在的传动机构振动和噪音大、产品品质控制困难的技术缺陷，技术方案是：一种冲牙器动力传动结构，包括：冲牙器壳体、动力电机、动力传动机构、往复运动拉杆和水泵活塞，动力传动机构由主动带轮、被动带轮和传动带构成，主动带轮与动力电机输出轴连接，被动带轮转动安装在冲牙器壳体上，往复运动拉杆一端与被动带轮端面上偏心设置的连接轴转动连接，往复运动拉杆的另一端与水泵活塞转动连接。有益效果是：采用同步带的柔性传动方式，而减除了大噪音，因同步带传具有缓冲、减振、噪音低优点，从而改善冲牙器的噪音和震动。', '一种冲牙器动力传动结构，解决现有齿轮传动的冲牙器存在的传动机构振动和噪音大、产品品质控制困难的技术缺陷，技术方案是：一种冲牙器动力传动结构，包括：冲牙器壳体、动力电机、动力传动机构、往复运动拉杆和水泵活塞，动力传动机构由主动带轮、被动带轮和传动带构成，主动带轮与动力电机输出轴连接，被动带轮转动安装在冲牙器壳体上，往复运动拉杆一端与被动带轮端面上偏心设置的连接轴转动连接，往复运动拉杆的另一端与水泵活塞转动连接。有益效果是：采用同步带的柔性传动方式，而减除了大噪音，因同步带传具有缓冲、减振、噪音低优点，从而改善冲牙器的噪音和震动。', 'CN202022463307.9', 1603987200, 'CN213575381U', 1624896000, 0, NULL, 1624896000, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 5, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '934', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 4, NULL, NULL, NULL, 41816, 41818, 41817, 1);
INSERT INTO `os_patent` VALUES (24084, '水泵机构及冲牙器', '水泵机构及冲牙器', 'CN213552530U', '本实用新型提供了一种水泵机构及冲牙器，水泵机构包括泵主体及阀组件，泵主体包括泵壳、活塞及驱动件，泵壳具有泵液腔，泵壳开设有连通至泵液腔的进液孔、出液孔及连通孔，活塞滑动地设置于泵液腔内并用于封堵连通孔，驱动件连接于活塞并用于驱动活塞在泵液腔内往复运动；阀组件包括单向阀及连接于单向阀的弹性件，单向阀能够抵触于安装面并盖设于出液孔或在外力作用下与安装面形成与出液孔连通的缝隙，弹性件具有驱动单向阀弹性抵接于安装面的弹性力。水泵机构通过设置对单向阀施加弹性力的弹性件使得单向阀受到负压的吸力及弹性力的共同作用而弹性抵接于安装面，避免由于单向阀与安装面之间气密性差而影响进液效率的情况。', '本实用新型提供了一种水泵机构及冲牙器，水泵机构包括泵主体及阀组件，泵主体包括泵壳、活塞及驱动件，泵壳具有泵液腔，泵壳开设有连通至泵液腔的进液孔、出液孔及连通孔，活塞滑动地设置于泵液腔内并用于封堵连通孔，驱动件连接于活塞并用于驱动活塞在泵液腔内往复运动；阀组件包括单向阀及连接于单向阀的弹性件，单向阀能够抵触于安装面并盖设于出液孔或在外力作用下与安装面形成与出液孔连通的缝隙，弹性件具有驱动单向阀弹性抵接于安装面的弹性力。水泵机构通过设置对单向阀施加弹性力的弹性件使得单向阀受到负压的吸力及弹性力的共同作用而弹性抵接于安装面，避免由于单向阀与安装面之间气密性差而影响进液效率的情况。', 'CN202020856118.5', 1589904000, 'CN213552530U', 1624896000, 0, NULL, 1624896000, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 11, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '935', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41819, 41821, 41820, 1);
INSERT INTO `os_patent` VALUES (24085, '一种口腔专用清洁仪', '一种口腔专用清洁仪', 'CN213525598U', '本实用新型涉及口腔护理技术领域，提供了一种口腔专用清洁仪，手柄部，其具有中空内腔；电机，其设置于中空内腔，电机的输出端设置有主动齿轮；连接杆，其内具有延其长度方向延伸的通道，其一端延伸至中空内腔、且在此端设置有与主动齿轮啮合的从动齿轮；刷头，其固定于连接杆远离从动齿轮的一端，刷头设置有刷毛和滋水孔、且在刷头内部设置有蓄水内腔；水箱，其设置于中空内腔，水箱内设置有水泵，水泵连接有送水管，所述送水管自通道延伸至蓄水内腔。本实用新型通过电机转动利用齿轮啮合联动连接杆转动，实现刷头同步转动，同时，通过水泵将水由水箱泵送至蓄水内腔，由刷头的滋水孔喷出，实现了边清洁边清洗口腔的目的。', '本实用新型涉及口腔护理技术领域，提供了一种口腔专用清洁仪，手柄部，其具有中空内腔；电机，其设置于中空内腔，电机的输出端设置有主动齿轮；连接杆，其内具有延其长度方向延伸的通道，其一端延伸至中空内腔、且在此端设置有与主动齿轮啮合的从动齿轮；刷头，其固定于连接杆远离从动齿轮的一端，刷头设置有刷毛和滋水孔、且在刷头内部设置有蓄水内腔；水箱，其设置于中空内腔，水箱内设置有水泵，水泵连接有送水管，所述送水管自通道延伸至蓄水内腔。本实用新型通过电机转动利用齿轮啮合联动连接杆转动，实现刷头同步转动，同时，通过水泵将水由水箱泵送至蓄水内腔，由刷头的滋水孔喷出，实现了边清洁边清洗口腔的目的。', 'CN202022437950.4', 1603814400, 'CN213525598U', 1624550400, 0, NULL, 1624550400, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 6, 2, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 1, 0, 0, 0, 0, NULL, '936', NULL, NULL, NULL, 'CN103142322A', NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 41822, 41824, 41823, 1);
INSERT INTO `os_patent` VALUES (24086, '一种降噪防漏耐用的脉冲冲牙器泵体构件', '一种降噪防漏耐用的脉冲冲牙器泵体构件', 'CN213540650U', '本实用新型公开了一种降噪防漏耐用的脉冲冲牙器泵体构件，包括壳体，所述壳体的内部一端设置有电机槽，所述壳体的内部中心处设置有驱动槽，所述壳体的内部另一端设置有泵槽，所述泵槽的内部设置有泵体，所述泵体的内部设置有活塞，所述驱动槽的中心处转动连接有从动螺旋伞齿轮，所述从动螺旋伞齿轮的顶端固定连接有偏心转动柱，采用复合尼龙材料的活塞，活塞与水接触后，活塞整体会膨胀，目的是为了保证在抽拉过程中泵体与活塞的摩擦相互抵消，减少损耗，提高整个抽拉装置与泵体的封闭紧密程度，抽拉越多，紧密程度越高，形式水冲击后的压力越强，压力变强，水柱也更大，同时更加可以防止腔体的水溢出。', '本实用新型公开了一种降噪防漏耐用的脉冲冲牙器泵体构件，包括壳体，所述壳体的内部一端设置有电机槽，所述壳体的内部中心处设置有驱动槽，所述壳体的内部另一端设置有泵槽，所述泵槽的内部设置有泵体，所述泵体的内部设置有活塞，所述驱动槽的中心处转动连接有从动螺旋伞齿轮，所述从动螺旋伞齿轮的顶端固定连接有偏心转动柱，采用复合尼龙材料的活塞，活塞与水接触后，活塞整体会膨胀，目的是为了保证在抽拉过程中泵体与活塞的摩擦相互抵消，减少损耗，提高整个抽拉装置与泵体的封闭紧密程度，抽拉越多，紧密程度越高，形式水冲击后的压力越强，压力变强，水柱也更大，同时更加可以防止腔体的水溢出。', 'CN202022257114.8', 1602432000, 'CN213540650U', 1624550400, 0, NULL, 1624550400, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 12, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 7, NULL, NULL, NULL, 41825, 41827, 41826, 2);
INSERT INTO `os_patent` VALUES (24087, '冲牙器水箱固定结构以及台式冲牙器', '冲牙器水箱固定结构以及台式冲牙器', 'CN213525596U', '本实用新型属于牙齿清洁技术领域，尤其涉及一种冲牙器水箱固定结构以及台式冲牙器，冲牙器水箱固定结构结构包括台式底座和蓄水水箱；台式底座包括底座本体以及至少两个卡止组件，底座本体的上侧具有承托平面，承托平面凸设插接凸柱，插接凸柱的外周柱面开设有安置孔，卡止组件包括卡止件以及弹性件，卡止件包括滑接部以及卡凸，卡凸呈半球状设置，弹性件在其弹性恢复力的作用下驱动滑接部沿安置孔滑动，且滑动至卡凸露出安置孔；蓄水水箱的下侧面开设插接槽，插接槽用于供插接凸柱插接，插接槽的槽壁开设有至少两个卡止槽。本实用新型提高了蓄水水箱与底座本体之间的装配效率。', '本实用新型属于牙齿清洁技术领域，尤其涉及一种冲牙器水箱固定结构以及台式冲牙器，冲牙器水箱固定结构结构包括台式底座和蓄水水箱；台式底座包括底座本体以及至少两个卡止组件，底座本体的上侧具有承托平面，承托平面凸设插接凸柱，插接凸柱的外周柱面开设有安置孔，卡止组件包括卡止件以及弹性件，卡止件包括滑接部以及卡凸，卡凸呈半球状设置，弹性件在其弹性恢复力的作用下驱动滑接部沿安置孔滑动，且滑动至卡凸露出安置孔；蓄水水箱的下侧面开设插接槽，插接槽用于供插接凸柱插接，插接槽的槽壁开设有至少两个卡止槽。本实用新型提高了蓄水水箱与底座本体之间的装配效率。', 'CN202021871776.8', 1598803200, 'CN213525596U', 1624550400, 0, NULL, 1624550400, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 12, 6, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '935', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41828, 41830, 41829, 1);
INSERT INTO `os_patent` VALUES (24088, '冲牙器伸缩水箱结构', '冲牙器伸缩水箱结构', 'CN213525593U', '本实用新型涉及牙科设备技术领域，具体涉及一种冲牙器伸缩水箱结构，包括包括水箱主体和伸缩箱体，其特征在于：水箱主体外表为圆柱体设计，内腔为圆台体，圆台体上部大、下部小，水箱主体内嵌套有伸缩箱体，伸缩箱体为圆柱体，表面设有垂直凹槽，水箱主体底部设有与垂直凹槽相嵌合的凸块，这样伸缩箱体只能上下滑动而不能旋转。', '本实用新型涉及牙科设备技术领域，具体涉及一种冲牙器伸缩水箱结构，包括包括水箱主体和伸缩箱体，其特征在于：水箱主体外表为圆柱体设计，内腔为圆台体，圆台体上部大、下部小，水箱主体内嵌套有伸缩箱体，伸缩箱体为圆柱体，表面设有垂直凹槽，水箱主体底部设有与垂直凹槽相嵌合的凸块，这样伸缩箱体只能上下滑动而不能旋转。', 'CN202021726757.6', 1597766400, 'CN213525593U', 1624550400, 0, NULL, 1624550400, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 10, 1, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '937', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 5, NULL, NULL, NULL, 41831, 41833, 41832, 1);
INSERT INTO `os_patent` VALUES (24089, '冲牙喷嘴以及冲牙器', '冲牙喷嘴以及冲牙器', 'CN213525595U', '本实用新型属于牙齿清洁技术领域，尤其涉及一种冲牙喷嘴以及冲牙器，其中，冲牙喷嘴包括喷射导流管以及与喷射导流管一体连接并从喷射导流管的外管壁面凸设形成的卡紧凸环，喷射导流管包括相互连接的喷射导流段和插接紧固段，插接紧固段包括相互连接的大斜面段以及插接引导段，大斜面段与喷射导流段连接，大斜面段的外管径在大斜面段指向插接引导段的方向上渐缩设置，插接引导段在大斜面段指向插接引导段的方向上渐扩设置，插接紧固段于大斜面段和插接引导段相接处凸设形成卡紧凸环。本实用新型的冲牙喷嘴的外壁面容易清理，且不易积攒污垢。', '本实用新型属于牙齿清洁技术领域，尤其涉及一种冲牙喷嘴以及冲牙器，其中，冲牙喷嘴包括喷射导流管以及与喷射导流管一体连接并从喷射导流管的外管壁面凸设形成的卡紧凸环，喷射导流管包括相互连接的喷射导流段和插接紧固段，插接紧固段包括相互连接的大斜面段以及插接引导段，大斜面段与喷射导流段连接，大斜面段的外管径在大斜面段指向插接引导段的方向上渐缩设置，插接引导段在大斜面段指向插接引导段的方向上渐扩设置，插接紧固段于大斜面段和插接引导段相接处凸设形成卡紧凸环。本实用新型的冲牙喷嘴的外壁面容易清理，且不易积攒污垢。', 'CN202021871131.4', 1598803200, 'CN213525595U', 1624550400, 0, NULL, 1624550400, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 9, 6, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '935', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41834, 41836, 41835, 1);
INSERT INTO `os_patent` VALUES (24090, '恒温式冲牙器', '恒温式冲牙器', 'CN213525600U', '本实用新型涉及口腔护理器具技术领域，公开了一种恒温式冲牙器，包括壳体以及加热组件；壳体上设置有供流体进入的流体入口以及供流体排出的流体出口，壳体内部具有连通流体入口和流体出口的流道；加热组件包括加热件、温度检测单元以及控制单元；加热件用于对流经流道的流体进行加热，温度检测单元用于温度检测得到温度信息，控制单元用于根据温度信息控制加热件的工作状态。本申请提供的一种恒温式冲牙器，通过采用该加热组件，实现了对冲牙器的流道内流体温度的控制调节，从而使得流体温度能够保持在恒定的温度范围内，提升了产品的使用体验。', '本实用新型涉及口腔护理器具技术领域，公开了一种恒温式冲牙器，包括壳体以及加热组件；壳体上设置有供流体进入的流体入口以及供流体排出的流体出口，壳体内部具有连通流体入口和流体出口的流道；加热组件包括加热件、温度检测单元以及控制单元；加热件用于对流经流道的流体进行加热，温度检测单元用于温度检测得到温度信息，控制单元用于根据温度信息控制加热件的工作状态。本申请提供的一种恒温式冲牙器，通过采用该加热组件，实现了对冲牙器的流道内流体温度的控制调节，从而使得流体温度能够保持在恒定的温度范围内，提升了产品的使用体验。', 'CN202021460879.5', 1595347200, 'CN213525600U', 1624550400, 0, NULL, 1624550400, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 9, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '932', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41837, 41839, 41838, 1);
INSERT INTO `os_patent` VALUES (24091, '冲牙器手柄及冲牙器', '冲牙器手柄及冲牙器', 'CN213525599U', '本实用新型涉及口腔护理器具技术领域，公开了冲牙器手柄及冲牙器，该冲牙器手柄包括泵体组件、推扭组件以及限位挡块；推扭组件包括推扭开关以及连接件；推扭开关可带动连接件运动，以带动泵体组件运动至开启状态或关闭状态；在推扭开关带动连接件运动的过程中，连接件与限位挡块之间具有力作用。本申请提供的一种冲牙器手柄，用户在推动推扭开关运动的过程中，推扭开关能够带动连接件一同运动，由于连接件与限位挡块之间具有力的作用，使得用户在推动推扭开关时能够感受到一定的阻力，从而提高了推扭开关的弹性，使其具有了良好的使用手感。', '本实用新型涉及口腔护理器具技术领域，公开了冲牙器手柄及冲牙器，该冲牙器手柄包括泵体组件、推扭组件以及限位挡块；推扭组件包括推扭开关以及连接件；推扭开关可带动连接件运动，以带动泵体组件运动至开启状态或关闭状态；在推扭开关带动连接件运动的过程中，连接件与限位挡块之间具有力作用。本申请提供的一种冲牙器手柄，用户在推动推扭开关运动的过程中，推扭开关能够带动连接件一同运动，由于连接件与限位挡块之间具有力的作用，使得用户在推动推扭开关时能够感受到一定的阻力，从而提高了推扭开关的弹性，使其具有了良好的使用手感。', 'CN202021458214.0', 1595347200, 'CN213525599U', 1624550400, 0, NULL, 1624550400, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 16, 3, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '932', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 10, NULL, NULL, NULL, 41840, 41842, 41841, 1);
INSERT INTO `os_patent` VALUES (24092, '洗牙器收纳盒', '洗牙器收纳盒', 'CN213525620U', '本实用新型属于洗牙器收纳技术领域，尤其涉及一种洗牙器收纳盒，包括盒体以及能够打开及盖合所述盒体的盒盖，所述盒盖在盖合所述盒体时与所述盒体共同形成第一容置腔以及第二容置腔，所述第一容置腔用于容置洁牙器主机，所述第二容置腔用于容置喷嘴，所述盒体设有能够从外部获取电能的蓄电电池，所述蓄电电池能在所述洁牙器主机容置于所述第一容置腔是为所述洁牙器主机充电。该洗牙器收纳盒能够通过蓄电电池为洁牙器主机充电，从而增加便携式洗牙器的续航能力。', '本实用新型属于洗牙器收纳技术领域，尤其涉及一种洗牙器收纳盒，包括盒体以及能够打开及盖合所述盒体的盒盖，所述盒盖在盖合所述盒体时与所述盒体共同形成第一容置腔以及第二容置腔，所述第一容置腔用于容置洁牙器主机，所述第二容置腔用于容置喷嘴，所述盒体设有能够从外部获取电能的蓄电电池，所述蓄电电池能在所述洁牙器主机容置于所述第一容置腔是为所述洁牙器主机充电。该洗牙器收纳盒能够通过蓄电电池为洁牙器主机充电，从而增加便携式洗牙器的续航能力。', 'CN202021052663.5', 1591632000, 'CN213525620U', 1624550400, 0, NULL, 1624550400, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 10, 6, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '935', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 41843, 41845, 41844, 1);
INSERT INTO `os_patent` VALUES (24093, '活塞、脉冲泵以及洗牙器', '活塞、脉冲泵以及洗牙器', 'CN213525591U', '本实用新型涉及一种活塞、脉冲泵以及洗牙器，其中，活塞包括：活塞本体，呈柱状设置，并由硬质材料制成，所述活塞本体的外柱壁开设有周向环绕的环槽；活塞环，由弹性材料制成，并至少设有两个，所述活塞环为开口环结构，所述活塞环的外环径大于所述活塞本体的柱径，各所述活塞环套接于所述环槽内，并在所述活塞本体的轴向上依次设置，各所述活塞环的内环面均与所述环槽的槽底密封配合，所述环槽的两槽壁分别与相邻的所述活塞环弹性抵接，至少一对相邻的两所述活塞环的环口在所述活塞本体的轴向上错位设置。', '本实用新型涉及一种活塞、脉冲泵以及洗牙器，其中，活塞包括：活塞本体，呈柱状设置，并由硬质材料制成，所述活塞本体的外柱壁开设有周向环绕的环槽；活塞环，由弹性材料制成，并至少设有两个，所述活塞环为开口环结构，所述活塞环的外环径大于所述活塞本体的柱径，各所述活塞环套接于所述环槽内，并在所述活塞本体的轴向上依次设置，各所述活塞环的内环面均与所述环槽的槽底密封配合，所述环槽的两槽壁分别与相邻的所述活塞环弹性抵接，至少一对相邻的两所述活塞环的环口在所述活塞本体的轴向上错位设置。', 'CN202021143595.3', 1592409600, 'CN213525591U', 1624550400, 0, NULL, 1624550400, '中国', NULL, NULL, NULL, NULL, 3, 1, NULL, NULL, NULL, NULL, 'U', NULL, NULL, 11, 6, 0, 0, 0, NULL, NULL, NULL, NULL, NULL, 0, 1, 1, NULL, NULL, 0, 0, 0, 0, 0, NULL, '935', NULL, NULL, NULL, NULL, NULL, NULL, 1, NULL, NULL, NULL, 1, NULL, NULL, 9, NULL, NULL, NULL, 41846, 41848, 41847, 1);

-- ----------------------------
-- Table structure for os_patent_affair
-- ----------------------------
DROP TABLE IF EXISTS `os_patent_affair`;
CREATE TABLE `os_patent_affair`  (
  `id` int(0) UNSIGNED NOT NULL AUTO_INCREMENT COMMENT 'ID',
  `datetime` int(0) NULL DEFAULT 0 COMMENT '发生日期',
  `status` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '法律状态',
  `simplestatus` tinyint(0) NULL DEFAULT 0 COMMENT '简单法律状态',
  `content` text CHARACTER SET utf8 COLLATE utf8_general_ci NULL COMMENT '事务内容（INPADOC法律状态）',
  `remark` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT '' COMMENT '备注',
  `pid` int(0) NOT NULL COMMENT '专利信息ID',
  PRIMARY KEY (`id`) USING BTREE
) ENGINE = InnoDB AUTO_INCREMENT = 31417 CHARACTER SET = utf8 COLLATE = utf8_general_ci COMMENT = '专利信息事务信息表' ROW_FORMAT = Dynamic;

-- ----------------------------
-- Records of os_patent_affair
-- ----------------------------
INSERT INTO `os_patent_affair` VALUES (27692, 1574956800, '1', 2, '2019-11-29 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2016-09-28 | ENTRY INTO SUBSTANTIVE EXAMINATION | CN | 2016-08-31 | +PUBLICATION | CN', '', 23625);
INSERT INTO `os_patent_affair` VALUES (27693, 1568304000, '1', 2, '2019-09-13 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2016-10-05 | ENTRY INTO SUBSTANTIVE EXAMINATION | CN | 2016-09-07 | +PUBLICATION | CN', '', 23626);
INSERT INTO `os_patent_affair` VALUES (27694, 1554134400, '1', 3, '2019-04-02 | +PATENT GRANT | CN | 2016-10-26 | ENTRY INTO SUBSTANTIVE EXAMINATION | CN | 2016-09-28 | +PUBLICATION | CN', '', 23627);
INSERT INTO `os_patent_affair` VALUES (27695, 1548950400, '1', 3, '2019-02-01 | +PATENT GRANT | CN | 2016-11-23 | ENTRY INTO SUBSTANTIVE EXAMINATION | CN | 2016-10-26 | +PUBLICATION | CN', '', 23628);
INSERT INTO `os_patent_affair` VALUES (27696, 1556553600, '1', 3, '2019-04-30 | +PATENT GRANT | CN | 2016-12-07 | ENTRY INTO SUBSTANTIVE EXAMINATION | CN | 2016-11-09 | +PUBLICATION | CN', '', 23629);
INSERT INTO `os_patent_affair` VALUES (27697, 1554134400, '1', 3, '2019-04-02 | +PATENT GRANT | CN | 2016-12-07 | ENTRY INTO SUBSTANTIVE EXAMINATION | CN | 2016-11-09 | +PUBLICATION | CN', '', 23630);
INSERT INTO `os_patent_affair` VALUES (27698, 1570464000, '1', 2, '2019-10-08 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2016-12-07 | ENTRY INTO SUBSTANTIVE EXAMINATION | CN | 2016-11-09 | +PUBLICATION | CN', '', 23631);
INSERT INTO `os_patent_affair` VALUES (27699, 1552320000, '1', 3, '2019-03-12 | +PATENT GRANT | CN | 2017-01-11 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2016-12-14 | +PUBLICATION | CN', '', 23632);
INSERT INTO `os_patent_affair` VALUES (27700, 1559836800, '1', 3, '2019-06-07 | +PATENT GRANT | CN | 2017-01-11 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2016-12-14 | +PUBLICATION | CN', '', 23633);
INSERT INTO `os_patent_affair` VALUES (27701, 1558627200, '1', 3, '2021-02-23 | CHANGE IN THE NAME OR TITLE OF A PATENT HOLDER | CN | 2019-05-24 | +PATENT GRANT | CN | 2017-03-01 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2017-01-25 | +PUBLICATION | CN', '', 23634);
INSERT INTO `os_patent_affair` VALUES (27702, 1568044800, '1', 3, '2021-01-01 | CHANGE IN THE NAME OR TITLE OF A PATENT HOLDER | CN | 2019-09-10 | +PATENT GRANT | CN | 2017-06-09 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2017-05-17 | PUBLICATION | CN', '', 23635);
INSERT INTO `os_patent_affair` VALUES (27703, 1579190400, '1', 2, '2020-01-17 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2017-06-23 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2017-05-31 | PUBLICATION | CN', '', 23636);
INSERT INTO `os_patent_affair` VALUES (27704, 1559232000, '1', 3, '2020-12-25 | CHANGE IN THE NAME OR TITLE OF A PATENT HOLDER | CN | 2019-05-31 | +PATENT GRANT | CN | 2017-06-23 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2017-05-31 | PUBLICATION | CN', '', 23637);
INSERT INTO `os_patent_affair` VALUES (27705, 1546531200, '1', 3, '2020-12-29 | CHANGE IN THE NAME OR TITLE OF A PATENT HOLDER | CN | 2019-01-04 | +PATENT GRANT | CN | 2017-06-23 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2017-05-31 | PUBLICATION | CN', '', 23638);
INSERT INTO `os_patent_affair` VALUES (27706, 1552924800, '1', 3, '2021-01-08 | CHANGE IN THE NAME OR TITLE OF A PATENT HOLDER | CN | 2019-03-19 | +PATENT GRANT | CN | 2017-07-14 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2017-06-20 | PUBLICATION | CN', '', 23639);
INSERT INTO `os_patent_affair` VALUES (27707, 1568649600, '1', 3, '2021-01-05 | CHANGE IN THE NAME OR TITLE OF A PATENT HOLDER | CN | 2019-09-17 | +PATENT GRANT | CN | 2017-07-14 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2017-06-20 | PUBLICATION | CN', '', 23640);
INSERT INTO `os_patent_affair` VALUES (27708, 1564070400, '1', 3, '2021-01-12 | CHANGE IN THE NAME OR TITLE OF A PATENT HOLDER | CN | 2019-07-26 | +PATENT GRANT | CN | 2017-07-14 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2017-06-20 | PUBLICATION | CN', '', 23641);
INSERT INTO `os_patent_affair` VALUES (27709, 1596729600, '1', 2, '2020-08-07 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2017-06-27 | PUBLICATION | CN', '', 23642);
INSERT INTO `os_patent_affair` VALUES (27710, 1626364800, '1', 2, '2021-07-16 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2017-06-27 | PUBLICATION | CN', '', 23643);
INSERT INTO `os_patent_affair` VALUES (27711, 1547136000, '1', 3, '2021-01-08 | CHANGE IN THE NAME OR TITLE OF A PATENT HOLDER | CN | 2019-01-11 | +PATENT GRANT | CN | 2017-07-25 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2017-06-30 | PUBLICATION | CN', '', 23644);
INSERT INTO `os_patent_affair` VALUES (27712, 1571932800, '1', 3, '2021-01-08 | CHANGE IN THE NAME OR TITLE OF A PATENT HOLDER | CN | 2019-10-25 | +PATENT GRANT | CN | 2017-08-01 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2017-07-07 | PUBLICATION | CN', '', 23645);
INSERT INTO `os_patent_affair` VALUES (27713, 1568649600, '1', 3, '2021-01-05 | CHANGE IN THE NAME OR TITLE OF A PATENT HOLDER | CN | 2019-09-17 | +PATENT GRANT | CN | 2017-08-04 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2017-07-11 | PUBLICATION | CN', '', 23646);
INSERT INTO `os_patent_affair` VALUES (27714, 1596124800, '1', 2, '2020-07-31 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2017-08-29 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2017-08-04 | PUBLICATION | CN', '', 23647);
INSERT INTO `os_patent_affair` VALUES (27715, 1585238400, '1', 2, '2020-03-27 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2017-09-12 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2017-08-18 | PUBLICATION | CN', '', 23648);
INSERT INTO `os_patent_affair` VALUES (27716, 1572537600, '1', 2, '2019-11-01 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2017-09-19 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2017-08-25 | PUBLICATION | CN', '', 23649);
INSERT INTO `os_patent_affair` VALUES (27717, 1571932800, '1', 3, '2021-01-05 | CHANGE IN THE NAME OR TITLE OF A PATENT HOLDER | CN | 2019-10-25 | +PATENT GRANT | CN | 2017-10-10 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2017-09-08 | PUBLICATION | CN', '', 23650);
INSERT INTO `os_patent_affair` VALUES (27718, 1568044800, '1', 3, '2021-01-01 | CHANGE IN THE NAME OR TITLE OF A PATENT HOLDER | CN | 2019-09-10 | +PATENT GRANT | CN | 2017-10-10 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2017-09-12 | PUBLICATION | CN', '', 23651);
INSERT INTO `os_patent_affair` VALUES (27719, 1577116800, '1', 3, '2020-12-25 | CHANGE IN THE NAME OR TITLE OF A PATENT HOLDER | CN | 2019-12-24 | +PATENT GRANT | CN | 2017-10-17 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2017-09-15 | PUBLICATION | CN', '', 23652);
INSERT INTO `os_patent_affair` VALUES (27720, 1582819200, '1', 2, '2020-02-28 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2017-10-17 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2017-09-15 | PUBLICATION | CN', '', 23653);
INSERT INTO `os_patent_affair` VALUES (27721, 1568649600, '1', 3, '2021-01-08 | CHANGE IN THE NAME OR TITLE OF A PATENT HOLDER | CN | 2019-09-17 | +PATENT GRANT | CN | 2017-10-17 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2017-09-15 | PUBLICATION | CN', '', 23654);
INSERT INTO `os_patent_affair` VALUES (27722, 1585238400, '1', 2, '2020-03-27 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2017-12-01 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2017-11-07 | PUBLICATION | CN', '', 23655);
INSERT INTO `os_patent_affair` VALUES (27723, 1591286400, '1', 2, '2020-06-05 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2017-12-22 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2017-11-24 | PUBLICATION | CN', '', 23656);
INSERT INTO `os_patent_affair` VALUES (27724, 1601568000, '1', 3, '2020-12-18 | CHANGE IN THE NAME OR TITLE OF A PATENT HOLDER | CN | 2020-10-02 | +PATENT GRANT | CN | 2017-12-01 | PUBLICATION | CN', '', 23657);
INSERT INTO `os_patent_affair` VALUES (27725, 1575561600, '1', 2, '2019-12-06 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2017-12-29 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2017-12-05 | PUBLICATION | CN', '', 23658);
INSERT INTO `os_patent_affair` VALUES (27726, 1556553600, '1', 3, '2019-04-30 | +PATENT GRANT | CN | 2018-01-19 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2017-12-22 | PUBLICATION | CN', '', 23659);
INSERT INTO `os_patent_affair` VALUES (27727, 1558972800, '1', 3, '2020-12-29 | CHANGE IN THE NAME OR TITLE OF A PATENT HOLDER | CN | 2019-05-28 | +PATENT GRANT | CN | 2018-01-26 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2017-12-29 | PUBLICATION | CN', '', 23660);
INSERT INTO `os_patent_affair` VALUES (27728, 1619712000, '1', 2, '2021-04-30 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2018-03-20 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2018-02-23 | PUBLICATION | CN', '', 23661);
INSERT INTO `os_patent_affair` VALUES (27729, 1622131200, '1', 3, '2021-05-28 | +PATENT GRANT | CN | 2018-03-30 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2018-03-06 | PUBLICATION | CN', '', 23662);
INSERT INTO `os_patent_affair` VALUES (27730, 1645718400, '1', 2, '2022-02-25 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2018-04-03 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2018-03-09 | PUBLICATION | CN', '', 23663);
INSERT INTO `os_patent_affair` VALUES (27731, 1573747200, '1', 3, '2021-02-23 | CHANGE IN THE NAME OR TITLE OF A PATENT HOLDER | CN | 2019-11-15 | +PATENT GRANT | CN | 2018-05-01 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2018-04-03 | PUBLICATION | CN', '', 23664);
INSERT INTO `os_patent_affair` VALUES (27732, 1568649600, '1', 3, '2019-09-17 | +PATENT GRANT | CN | 2018-06-01 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2018-05-04 | PUBLICATION | CN', '', 23665);
INSERT INTO `os_patent_affair` VALUES (27733, 1598544000, '1', 3, '2020-08-28 | +PATENT GRANT | CN | 2018-06-05 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2018-05-11 | PUBLICATION | CN', '', 23666);
INSERT INTO `os_patent_affair` VALUES (27734, 1629993600, '1', 2, '2021-08-27 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2018-06-08 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2018-05-15 | PUBLICATION | CN', '', 23667);
INSERT INTO `os_patent_affair` VALUES (27735, 1598889600, '1', 3, '2020-09-01 | +PATENT GRANT | CN | 2018-07-13 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2018-06-15 | PUBLICATION | CN', '', 23668);
INSERT INTO `os_patent_affair` VALUES (27736, 1601568000, '1', 2, '2020-10-02 | -INVENTION PATENT APPLICATION DEEMED WITHDRAWN AFTER PUBLICATION | CN | 2018-07-13 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2018-06-19 | PUBLICATION | CN', '', 23669);
INSERT INTO `os_patent_affair` VALUES (27737, 1594915200, '1', 2, '2020-07-17 | -INVENTION PATENT APPLICATION DEEMED WITHDRAWN AFTER PUBLICATION | CN | 2018-07-13 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2018-06-19 | PUBLICATION | CN', '', 23670);
INSERT INTO `os_patent_affair` VALUES (27738, 1594915200, '1', 3, '2021-01-08 | CHANGE IN THE NAME OR TITLE OF A PATENT HOLDER | CN | 2020-07-17 | +PATENT GRANT | CN | 2018-07-17 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2018-06-22 | PUBLICATION | CN', '', 23671);
INSERT INTO `os_patent_affair` VALUES (27739, 1573747200, '1', 3, '2021-02-26 | CHANGE IN THE NAME OR TITLE OF A PATENT HOLDER | CN | 2019-11-15 | +PATENT GRANT | CN | 2018-08-07 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2018-07-13 | PUBLICATION | CN', '', 23672);
INSERT INTO `os_patent_affair` VALUES (27740, 1614614400, '1', 3, '2021-03-02 | +PATENT GRANT | CN | 2018-08-10 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2018-07-17 | PUBLICATION | CN', '', 23673);
INSERT INTO `os_patent_affair` VALUES (27741, 1570723200, '1', 3, '2019-10-11 | +PATENT GRANT | CN | 2018-08-28 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2018-08-03 | PUBLICATION | CN', '', 23674);
INSERT INTO `os_patent_affair` VALUES (27742, 1586793600, '1', 3, '2020-04-14 | +PATENT GRANT | CN | 2018-09-18 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2018-08-24 | PUBLICATION | CN', '', 23675);
INSERT INTO `os_patent_affair` VALUES (27743, 1613059200, '1', 2, '2021-02-12 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2018-09-28 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2018-09-04 | PUBLICATION | CN', '', 23676);
INSERT INTO `os_patent_affair` VALUES (27744, 1601308800, '1', 3, '2020-12-25 | CHANGE IN THE NAME OR TITLE OF A PATENT HOLDER | CN | 2020-09-29 | +PATENT GRANT | CN | 2018-09-28 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2018-09-04 | PUBLICATION | CN', '', 23677);
INSERT INTO `os_patent_affair` VALUES (27745, 1588003200, '1', 3, '2020-04-28 | +PATENT GRANT | CN | 2018-10-16 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2018-09-14 | PUBLICATION | CN', '', 23678);
INSERT INTO `os_patent_affair` VALUES (27746, 1598889600, '1', 3, '2020-12-25 | CHANGE IN THE NAME OR TITLE OF A PATENT HOLDER | CN | 2020-09-01 | +PATENT GRANT | CN | 2018-10-16 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2018-09-14 | PUBLICATION | CN', '', 23679);
INSERT INTO `os_patent_affair` VALUES (27747, 1603987200, '1', 3, '2020-10-30 | +PATENT GRANT | CN | 2018-10-23 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2018-09-21 | PUBLICATION | CN', '', 23680);
INSERT INTO `os_patent_affair` VALUES (27748, 1611244800, '1', 2, '2021-01-22 | -INVENTION PATENT APPLICATION DEEMED WITHDRAWN AFTER PUBLICATION | CN | 2018-10-26 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2018-09-28 | PUBLICATION | CN', '', 23681);
INSERT INTO `os_patent_affair` VALUES (27749, 1592496000, '1', 2, '2020-06-19 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2018-10-26 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2018-09-28 | PUBLICATION | CN', '', 23682);
INSERT INTO `os_patent_affair` VALUES (27750, 1603987200, '1', 3, '2020-10-30 | +PATENT GRANT | CN | 2018-11-13 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2018-10-19 | PUBLICATION | CN', '', 23683);
INSERT INTO `os_patent_affair` VALUES (27751, 1624550400, '1', 3, '2021-06-25 | +PATENT GRANT | CN | 2018-11-27 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2018-11-02 | PUBLICATION | CN', '', 23684);
INSERT INTO `os_patent_affair` VALUES (27752, 1606406400, '1', 2, '2020-11-27 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2018-11-30 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2018-11-06 | PUBLICATION | CN', '', 23685);
INSERT INTO `os_patent_affair` VALUES (27753, 1545062400, '2', 1, '2021-02-26 | CHANGE OF APPLICANT INFORMATION | CN | 2018-12-18 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2018-11-23 | PUBLICATION | CN', '', 23686);
INSERT INTO `os_patent_affair` VALUES (27754, 1545926400, '2', 1, '2018-12-28 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2018-12-04 | PUBLICATION | CN', '', 23687);
INSERT INTO `os_patent_affair` VALUES (27755, 1545926400, '2', 1, '2018-12-28 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2018-12-04 | PUBLICATION | CN', '', 23687);
INSERT INTO `os_patent_affair` VALUES (27756, 1605801600, '1', 2, '2020-11-20 | -INVENTION PATENT APPLICATION DEEMED WITHDRAWN AFTER PUBLICATION | CN | 2019-01-04 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2018-12-11 | PUBLICATION | CN', '', 23688);
INSERT INTO `os_patent_affair` VALUES (27757, 1640880000, '1', 2, '2021-12-31 | -INVENTION PATENT APPLICATION DEEMED WITHDRAWN AFTER PUBLICATION | CN | 2019-01-04 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2018-12-11 | PUBLICATION | CN', '', 23689);
INSERT INTO `os_patent_affair` VALUES (27758, 1635436800, '1', 2, '2021-10-29 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2019-01-08 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2018-12-14 | PUBLICATION | CN', '', 23690);
INSERT INTO `os_patent_affair` VALUES (27759, 1616688000, '1', 2, '2021-03-26 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2019-01-25 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-01-01 | PUBLICATION | CN', '', 23691);
INSERT INTO `os_patent_affair` VALUES (27760, 1592236800, '1', 3, '2020-06-16 | +PATENT GRANT | CN | 2019-02-12 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-01-11 | PUBLICATION | CN', '', 23692);
INSERT INTO `os_patent_affair` VALUES (27761, 1594915200, '1', 2, '2020-07-17 | -INVENTION PATENT APPLICATION DEEMED WITHDRAWN AFTER PUBLICATION | CN | 2019-02-12 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-01-15 | PUBLICATION | CN', '', 23693);
INSERT INTO `os_patent_affair` VALUES (27762, 1551369600, '2', 1, '2019-03-01 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-02-01 | PUBLICATION | CN', '', 23694);
INSERT INTO `os_patent_affair` VALUES (27763, 1574352000, '1', 3, '2019-11-22 | +PATENT GRANT | CN | 2019-03-01 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-02-01 | PUBLICATION | CN', '', 23695);
INSERT INTO `os_patent_affair` VALUES (27764, 1551715200, '2', 1, '2019-03-05 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-02-05 | PUBLICATION | CN', '', 23696);
INSERT INTO `os_patent_affair` VALUES (27765, 1551715200, '2', 1, '2019-03-05 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-02-05 | PUBLICATION | CN', '', 23696);
INSERT INTO `os_patent_affair` VALUES (27766, 1552579200, '2', 1, '2019-03-15 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-02-19 | PUBLICATION | CN', '', 23697);
INSERT INTO `os_patent_affair` VALUES (27767, 1640275200, '1', 2, '2021-12-24 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2019-04-12 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-03-19 | PUBLICATION | CN', '', 23698);
INSERT INTO `os_patent_affair` VALUES (27768, 1629993600, '1', 2, '2021-08-27 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2019-04-12 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-03-19 | PUBLICATION | CN', '', 23699);
INSERT INTO `os_patent_affair` VALUES (27769, 1629993600, '2', 2, '2021-08-27 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2019-04-12 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-03-19 | PUBLICATION | CN', '', 23699);
INSERT INTO `os_patent_affair` VALUES (27770, 1607356800, '1', 3, '2020-12-08 | +PATENT GRANT | CN | 2019-04-12 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-03-19 | PUBLICATION | CN', '', 23700);
INSERT INTO `os_patent_affair` VALUES (27771, 1624550400, '1', 2, '2021-06-25 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2019-04-23 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-03-29 | PUBLICATION | CN', '', 23701);
INSERT INTO `os_patent_affair` VALUES (27772, 1603728000, '1', 3, '2020-10-27 | +PATENT GRANT | CN | 2019-05-03 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-04-09 | PUBLICATION | CN', '', 23702);
INSERT INTO `os_patent_affair` VALUES (27773, 1598889600, '1', 3, '2020-09-01 | +PATENT GRANT | CN | 2019-05-03 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-04-09 | PUBLICATION | CN', '', 23703);
INSERT INTO `os_patent_affair` VALUES (27774, 1602518400, '1', 3, '2020-10-13 | +PATENT GRANT | CN | 2019-05-07 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-04-12 | PUBLICATION | CN', '', 23704);
INSERT INTO `os_patent_affair` VALUES (27775, 1645718400, '1', 2, '2022-02-25 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2019-05-10 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-04-16 | PUBLICATION | CN', '', 23705);
INSERT INTO `os_patent_affair` VALUES (27776, 1602518400, '1', 3, '2020-10-13 | +PATENT GRANT | CN | 2019-05-10 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-04-16 | PUBLICATION | CN', '', 23706);
INSERT INTO `os_patent_affair` VALUES (27777, 1627574400, '1', 2, '2021-07-30 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2019-05-10 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-04-16 | PUBLICATION | CN', '', 23707);
INSERT INTO `os_patent_affair` VALUES (27778, 1632412800, '1', 3, '2021-09-24 | +PATENT GRANT | CN | 2019-05-21 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-04-26 | PUBLICATION | CN', '', 23708);
INSERT INTO `os_patent_affair` VALUES (27779, 1627574400, '1', 2, '2021-07-30 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2019-06-14 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-05-21 | PUBLICATION | CN', '', 23709);
INSERT INTO `os_patent_affair` VALUES (27780, 1614268800, '1', 3, '2021-02-26 | +PATENT GRANT | CN | 2019-07-05 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-06-11 | PUBLICATION | CN', '', 23710);
INSERT INTO `os_patent_affair` VALUES (27781, 1644249600, '1', 2, '2022-02-08 | -INVENTION PATENT APPLICATION DEEMED WITHDRAWN AFTER PUBLICATION | CN | 2019-07-30 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-07-05 | PUBLICATION | CN', '', 23711);
INSERT INTO `os_patent_affair` VALUES (27782, 1622131200, '1', 2, '2021-05-28 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2019-08-13 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-07-19 | PUBLICATION | CN', '', 23712);
INSERT INTO `os_patent_affair` VALUES (27783, 1620316800, '1', 2, '2021-05-07 | -INVENTION PATENT APPLICATION DEEMED WITHDRAWN AFTER PUBLICATION | CN | 2019-08-16 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-07-23 | PUBLICATION | CN', '', 23713);
INSERT INTO `os_patent_affair` VALUES (27784, 1603987200, '1', 3, '2019-08-20 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-07-26 | PUBLICATION | CN', '', 23714);
INSERT INTO `os_patent_affair` VALUES (27785, 1622476800, '1', 3, '2021-06-01 | +PATENT GRANT | CN | 2019-08-23 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-07-30 | PUBLICATION | CN', '', 23715);
INSERT INTO `os_patent_affair` VALUES (27786, 1604937600, '1', 3, '2020-11-10 | +PATENT GRANT | CN | 2019-08-27 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-08-02 | PUBLICATION | CN', '', 23716);
INSERT INTO `os_patent_affair` VALUES (27787, 1648483200, '1', 2, '2022-03-29 | -INVENTION PATENT APPLICATION DEEMED WITHDRAWN AFTER PUBLICATION | CN | 2019-09-03 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-08-09 | PUBLICATION | CN', '', 23717);
INSERT INTO `os_patent_affair` VALUES (27788, 1612195200, '1', 3, '2021-02-23 | CHANGE IN THE NAME OR TITLE OF A PATENT HOLDER | CN | 2021-02-02 | +PATENT GRANT | CN | 2019-09-03 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-08-09 | PUBLICATION | CN', '', 23718);
INSERT INTO `os_patent_affair` VALUES (27789, 1567440000, '2', 1, '2019-09-03 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-08-09 | PUBLICATION | CN', '', 23719);
INSERT INTO `os_patent_affair` VALUES (27790, 1633017600, '1', 2, '2021-10-01 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2019-09-17 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-08-23 | PUBLICATION | CN', '', 23720);
INSERT INTO `os_patent_affair` VALUES (27791, 1597075200, '1', 3, '2020-08-11 | +PATENT GRANT | CN | 2019-09-27 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-09-03 | PUBLICATION | CN', '', 23721);
INSERT INTO `os_patent_affair` VALUES (27792, 1608825600, '1', 3, '2020-12-25 | +PATENT GRANT | CN | 2019-10-08 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-09-06 | PUBLICATION | CN', '', 23722);
INSERT INTO `os_patent_affair` VALUES (27793, 1631808000, '1', 2, '2021-09-17 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2019-10-08 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-09-06 | PUBLICATION | CN', '', 23723);
INSERT INTO `os_patent_affair` VALUES (27794, 1607356800, '1', 3, '2020-12-08 | +PATENT GRANT | CN | 2019-10-08 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-09-06 | PUBLICATION | CN', '', 23724);
INSERT INTO `os_patent_affair` VALUES (27795, 1614268800, '1', 3, '2021-02-26 | +PATENT GRANT | CN | 2019-10-08 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-09-10 | PUBLICATION | CN', '', 23725);
INSERT INTO `os_patent_affair` VALUES (27796, 1622131200, '1', 2, '2021-05-28 | -INVENTION PATENT APPLICATION DEEMED WITHDRAWN AFTER PUBLICATION | CN | 2019-10-08 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-09-10 | PUBLICATION | CN', '', 23726);
INSERT INTO `os_patent_affair` VALUES (27797, 1571068800, '2', 1, '2019-10-15 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-09-13 | PUBLICATION | CN', '', 23727);
INSERT INTO `os_patent_affair` VALUES (27798, 1602777600, '1', 3, '2020-10-16 | +PATENT GRANT | CN | 2019-10-15 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-09-13 | PUBLICATION | CN', '', 23728);
INSERT INTO `os_patent_affair` VALUES (27799, 1614268800, '1', 3, '2021-02-26 | +PATENT GRANT | CN | 2019-10-22 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-09-20 | PUBLICATION | CN', '', 23729);
INSERT INTO `os_patent_affair` VALUES (27800, 1571673600, '2', 1, '2019-10-22 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-09-24 | PUBLICATION | CN', '', 23730);
INSERT INTO `os_patent_affair` VALUES (27801, 1638460800, '1', 3, '2021-12-03 | +PATENT GRANT | CN | 2019-10-22 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-09-24 | PUBLICATION | CN', '', 23731);
INSERT INTO `os_patent_affair` VALUES (27802, 1597075200, '1', 3, '2020-08-11 | +PATENT GRANT | CN | 2019-11-05 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-10-11 | PUBLICATION | CN', '', 23732);
INSERT INTO `os_patent_affair` VALUES (27803, 1633017600, '1', 3, '2021-10-01 | +PATENT GRANT | CN | 2019-11-08 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-10-15 | PUBLICATION | CN', '', 23733);
INSERT INTO `os_patent_affair` VALUES (27804, 1617292800, '1', 3, '2021-04-02 | +PATENT GRANT | CN | 2019-11-08 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-10-15 | PUBLICATION | CN', '', 23734);
INSERT INTO `os_patent_affair` VALUES (27805, 1619452800, '1', 3, '2021-04-27 | +PATENT GRANT | CN | 2019-11-12 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-10-18 | PUBLICATION | CN', '', 23735);
INSERT INTO `os_patent_affair` VALUES (27806, 1620662400, '1', 2, '2021-05-11 | -INVENTION PATENT APPLICATION DEEMED WITHDRAWN AFTER PUBLICATION | CN | 2019-11-19 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-10-25 | PUBLICATION | CN', '', 23736);
INSERT INTO `os_patent_affair` VALUES (27807, 1574697600, '2', 1, '2019-11-26 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-11-01 | PUBLICATION | CN', '', 23737);
INSERT INTO `os_patent_affair` VALUES (27808, 1598889600, '1', 3, '2021-02-23 | CHANGE IN THE NAME OR TITLE OF A PATENT HOLDER | CN | 2020-09-01 | +PATENT GRANT | CN | 2019-11-29 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-11-05 | PUBLICATION | CN', '', 23738);
INSERT INTO `os_patent_affair` VALUES (27809, 1614268800, '1', 3, '2021-02-26 | +PATENT GRANT | CN | 2019-11-29 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-11-05 | PUBLICATION | CN', '', 23739);
INSERT INTO `os_patent_affair` VALUES (27810, 1574956800, '2', 1, '2019-11-29 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-11-05 | PUBLICATION | CN', '', 23740);
INSERT INTO `os_patent_affair` VALUES (27811, 1575561600, '2', 1, '2019-12-06 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-11-12 | PUBLICATION | CN', '', 23741);
INSERT INTO `os_patent_affair` VALUES (27812, 1575907200, '2', 1, '2019-12-10 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-11-15 | PUBLICATION | CN', '', 23742);
INSERT INTO `os_patent_affair` VALUES (27813, 1645718400, '1', 2, '2022-02-25 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2019-12-17 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-11-22 | PUBLICATION | CN', '', 23743);
INSERT INTO `os_patent_affair` VALUES (27814, 1640275200, '1', 3, '2021-12-24 | +PATENT GRANT | CN | 2019-12-17 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-11-22 | PUBLICATION | CN', '', 23744);
INSERT INTO `os_patent_affair` VALUES (27815, 1646928000, '1', 2, '2022-03-11 | -INVENTION PATENT APPLICATION DEEMED WITHDRAWN AFTER PUBLICATION | CN | 2020-01-07 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-12-13 | PUBLICATION | CN', '', 23745);
INSERT INTO `os_patent_affair` VALUES (27816, 1640620800, '1', 3, '2021-12-28 | +PATENT GRANT | CN | 2020-01-07 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-12-13 | PUBLICATION | CN', '', 23746);
INSERT INTO `os_patent_affair` VALUES (27817, 1614268800, '1', 3, '2021-02-26 | +PATENT GRANT | CN | 2020-01-10 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-12-17 | PUBLICATION | CN', '', 23747);
INSERT INTO `os_patent_affair` VALUES (27818, 1637856000, '1', 2, '2021-11-26 | -INVENTION PATENT APPLICATION DEEMED WITHDRAWN AFTER PUBLICATION | CN | 2020-01-14 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-12-20 | PUBLICATION | CN', '', 23748);
INSERT INTO `os_patent_affair` VALUES (27819, 1645718400, '1', 2, '2022-02-25 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2020-01-14 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-12-20 | PUBLICATION | CN', '', 23749);
INSERT INTO `os_patent_affair` VALUES (27820, 1612195200, '1', 3, '2021-02-02 | +PATENT GRANT | CN | 2020-01-14 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-12-20 | PUBLICATION | CN', '', 23750);
INSERT INTO `os_patent_affair` VALUES (27821, 1646064000, '1', 3, '2022-03-01 | +PATENT GRANT | CN | 2020-01-17 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-12-24 | PUBLICATION | CN', '', 23751);
INSERT INTO `os_patent_affair` VALUES (27822, 1641225600, '1', 2, '2022-01-04 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2020-01-24 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-12-31 | PUBLICATION | CN', '', 23752);
INSERT INTO `os_patent_affair` VALUES (27823, 1579795200, '2', 1, '2020-01-24 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-12-31 | PUBLICATION | CN', '', 23753);
INSERT INTO `os_patent_affair` VALUES (27824, 1638460800, '1', 2, '2021-12-03 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2020-01-24 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2019-12-31 | PUBLICATION | CN', '', 23754);
INSERT INTO `os_patent_affair` VALUES (27825, 1643299200, '1', 2, '2022-01-28 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2020-02-11 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-01-10 | PUBLICATION | CN', '', 23755);
INSERT INTO `os_patent_affair` VALUES (27826, 1622476800, '1', 3, '2021-06-01 | +PATENT GRANT | CN | 2020-02-11 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-01-10 | PUBLICATION | CN', '', 23756);
INSERT INTO `os_patent_affair` VALUES (27827, 1640620800, '1', 3, '2021-12-28 | +PATENT GRANT | CN | 2020-02-11 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-01-14 | PUBLICATION | CN', '', 23757);
INSERT INTO `os_patent_affair` VALUES (27828, 1581955200, '2', 1, '2020-02-18 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-01-17 | PUBLICATION | CN', '', 23758);
INSERT INTO `os_patent_affair` VALUES (27829, 1581955200, '2', 1, '2020-02-18 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-01-17 | PUBLICATION | CN', '', 23759);
INSERT INTO `os_patent_affair` VALUES (27830, 1625500800, '1', 3, '2021-07-06 | +PATENT GRANT | CN | 2020-02-18 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-01-17 | PUBLICATION | CN', '', 23760);
INSERT INTO `os_patent_affair` VALUES (27831, 1643644800, '1', 3, '2022-02-01 | +PATENT GRANT | CN | 2020-02-18 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-01-17 | PUBLICATION | CN', '', 23761);
INSERT INTO `os_patent_affair` VALUES (27832, 1635436800, '1', 2, '2021-10-29 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2020-02-18 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-01-17 | PUBLICATION | CN', '', 23762);
INSERT INTO `os_patent_affair` VALUES (27833, 1651161600, '1', 2, '2020-02-21 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-01-21 | PUBLICATION | CN', '', 23763);
INSERT INTO `os_patent_affair` VALUES (27834, 1646323200, '1', 2, '2022-03-04 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2020-03-10 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-02-14 | PUBLICATION | CN', '', 23764);
INSERT INTO `os_patent_affair` VALUES (27835, 1651161600, '1', 2, '2020-03-13 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-02-18 | PUBLICATION | CN', '', 23765);
INSERT INTO `os_patent_affair` VALUES (27836, 1584374400, '2', 1, '2020-03-17 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-02-21 | PUBLICATION | CN', '', 23766);
INSERT INTO `os_patent_affair` VALUES (27837, 1584374400, '2', 1, '2020-03-17 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-02-21 | PUBLICATION | CN', '', 23767);
INSERT INTO `os_patent_affair` VALUES (27838, 1584374400, '2', 1, '2020-03-17 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-02-21 | PUBLICATION | CN', '', 23768);
INSERT INTO `os_patent_affair` VALUES (27839, 1637251200, '1', 2, '2020-03-17 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-02-21 | PUBLICATION | CN', '', 23769);
INSERT INTO `os_patent_affair` VALUES (27840, 1645718400, '1', 2, '2022-02-25 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2020-03-24 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-02-28 | PUBLICATION | CN', '', 23770);
INSERT INTO `os_patent_affair` VALUES (27841, 1625500800, '1', 3, '2021-07-06 | +PATENT GRANT | CN | 2020-03-24 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-02-28 | PUBLICATION | CN', '', 23771);
INSERT INTO `os_patent_affair` VALUES (27842, 1650902400, '1', 3, '2020-03-24 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-02-28 | PUBLICATION | CN', '', 23772);
INSERT INTO `os_patent_affair` VALUES (27843, 1584979200, '2', 1, '2020-03-24 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-02-28 | PUBLICATION | CN', '', 23773);
INSERT INTO `os_patent_affair` VALUES (27844, 1585584000, '2', 1, '2020-03-31 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-03-06 | PUBLICATION | CN', '', 23774);
INSERT INTO `os_patent_affair` VALUES (27845, 1585584000, '2', 1, '2020-03-31 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-03-06 | PUBLICATION | CN', '', 23775);
INSERT INTO `os_patent_affair` VALUES (27846, 1585584000, '2', 1, '2020-03-31 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-03-06 | PUBLICATION | CN', '', 23776);
INSERT INTO `os_patent_affair` VALUES (27847, 1586188800, '2', 1, '2020-04-07 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN', '', 23777);
INSERT INTO `os_patent_affair` VALUES (27848, 1633622400, '1', 3, '2021-10-08 | +PATENT GRANT | CN | 2020-04-17 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-03-24 | PUBLICATION | CN', '', 23778);
INSERT INTO `os_patent_affair` VALUES (27849, 1639670400, '1', 2, '2021-12-17 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2020-04-21 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-03-27 | PUBLICATION | CN', '', 23779);
INSERT INTO `os_patent_affair` VALUES (27850, 1587398400, '2', 1, '2020-04-21 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-03-27 | PUBLICATION | CN', '', 23780);
INSERT INTO `os_patent_affair` VALUES (27851, 1633622400, '1', 3, '2021-10-08 | +PATENT GRANT | CN | 2020-05-01 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-04-07 | PUBLICATION | CN', '', 23781);
INSERT INTO `os_patent_affair` VALUES (27852, 1588608000, '2', 1, '2020-05-05 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-04-10 | PUBLICATION | CN', '', 23782);
INSERT INTO `os_patent_affair` VALUES (27853, 1614009600, '1', 3, '2021-02-23 | +PATENT GRANT | CN | 2020-05-05 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-04-10 | PUBLICATION | CN', '', 23783);
INSERT INTO `os_patent_affair` VALUES (27854, 1635436800, '1', 2, '2021-10-29 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2020-05-08 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-04-14 | PUBLICATION | CN', '', 23784);
INSERT INTO `os_patent_affair` VALUES (27855, 1647532800, '1', 2, '2022-03-18 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2020-05-12 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-04-17 | PUBLICATION | CN', '', 23785);
INSERT INTO `os_patent_affair` VALUES (27856, 1608825600, '1', 3, '2020-12-25 | +PATENT GRANT | CN | 2020-05-12 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-04-17 | PUBLICATION | CN', '', 23786);
INSERT INTO `os_patent_affair` VALUES (27857, 1589212800, '2', 1, '2020-05-12 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-04-17 | PUBLICATION | CN', '', 23787);
INSERT INTO `os_patent_affair` VALUES (27858, 1645718400, '1', 2, '2022-02-25 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2020-05-15 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-04-21 | PUBLICATION | CN', '', 23788);
INSERT INTO `os_patent_affair` VALUES (27859, 1647532800, '1', 2, '2022-03-18 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2020-05-19 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-04-24 | PUBLICATION | CN', '', 23789);
INSERT INTO `os_patent_affair` VALUES (27860, 1589817600, '2', 1, '2020-05-19 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-04-24 | PUBLICATION | CN', '', 23790);
INSERT INTO `os_patent_affair` VALUES (27861, 1589817600, '2', 1, '2020-05-19 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-04-24 | PUBLICATION | CN', '', 23791);
INSERT INTO `os_patent_affair` VALUES (27862, 1590076800, '2', 1, '2020-05-22 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-04-28 | PUBLICATION | CN', '', 23792);
INSERT INTO `os_patent_affair` VALUES (27863, 1590076800, '2', 1, '2020-05-22 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-04-28 | PUBLICATION | CN', '', 23793);
INSERT INTO `os_patent_affair` VALUES (27864, 1591027200, '2', 1, '2020-06-02 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-05-08 | PUBLICATION | CN', '', 23794);
INSERT INTO `os_patent_affair` VALUES (27865, 1591027200, '2', 1, '2020-06-02 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-05-08 | PUBLICATION | CN', '', 23795);
INSERT INTO `os_patent_affair` VALUES (27866, 1591027200, '2', 1, '2020-06-02 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-05-08 | PUBLICATION | CN', '', 23796);
INSERT INTO `os_patent_affair` VALUES (27867, 1591027200, '2', 1, '2020-06-02 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-05-08 | PUBLICATION | CN', '', 23797);
INSERT INTO `os_patent_affair` VALUES (27868, 1626969600, '1', 3, '2021-07-23 | +PATENT GRANT | CN | 2020-06-02 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-05-08 | PUBLICATION | CN', '', 23798);
INSERT INTO `os_patent_affair` VALUES (27869, 1627920000, '1', 3, '2021-08-03 | +PATENT GRANT | CN | 2020-06-02 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-05-08 | PUBLICATION | CN', '', 23799);
INSERT INTO `os_patent_affair` VALUES (27870, 1600099200, '1', 3, '2020-09-15 | +PATENT GRANT | CN | 2020-06-05 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-05-12 | PUBLICATION | CN', '', 23800);
INSERT INTO `os_patent_affair` VALUES (27871, 1591286400, '2', 1, '2020-06-05 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-05-12 | PUBLICATION | CN', '', 23801);
INSERT INTO `os_patent_affair` VALUES (27872, 1645718400, '1', 2, '2022-02-25 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2020-06-09 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-05-15 | PUBLICATION | CN', '', 23802);
INSERT INTO `os_patent_affair` VALUES (27873, 1600963200, '1', 3, '2020-09-25 | +PATENT GRANT | CN | 2020-06-09 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-05-15 | PUBLICATION | CN', '', 23803);
INSERT INTO `os_patent_affair` VALUES (27874, 1591891200, '2', 1, '2020-06-12 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-05-19 | PUBLICATION | CN', '', 23804);
INSERT INTO `os_patent_affair` VALUES (27875, 1625500800, '1', 3, '2021-07-06 | +PATENT GRANT | CN | 2020-06-12 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-05-19 | PUBLICATION | CN', '', 23805);
INSERT INTO `os_patent_affair` VALUES (27876, 1592496000, '2', 1, '2020-06-19 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-05-26 | PUBLICATION | CN', '', 23806);
INSERT INTO `os_patent_affair` VALUES (27877, 1625500800, '1', 3, '2021-07-06 | +PATENT GRANT | CN | 2020-06-19 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-05-26 | PUBLICATION | CN', '', 23807);
INSERT INTO `os_patent_affair` VALUES (27878, 1612195200, '1', 3, '2021-02-02 | +PATENT GRANT | CN | 2020-06-23 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-05-29 | PUBLICATION | CN', '', 23808);
INSERT INTO `os_patent_affair` VALUES (27879, 1592841600, '2', 1, '2020-06-23 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-05-29 | PUBLICATION | CN', '', 23809);
INSERT INTO `os_patent_affair` VALUES (27880, 1625500800, '1', 3, '2021-07-06 | +PATENT GRANT | CN | 2020-06-30 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-06-05 | PUBLICATION | CN', '', 23810);
INSERT INTO `os_patent_affair` VALUES (27881, 1645113600, '1', 2, '2022-02-18 | -INVENTION PATENT APPLICATION DEEMED WITHDRAWN AFTER PUBLICATION | CN | 2020-06-30 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-06-05 | PUBLICATION | CN', '', 23811);
INSERT INTO `os_patent_affair` VALUES (27882, 1593446400, '2', 1, '2020-06-30 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-06-05 | PUBLICATION | CN', '', 23812);
INSERT INTO `os_patent_affair` VALUES (27883, 1593705600, '2', 1, '2020-07-03 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-06-09 | PUBLICATION | CN', '', 23813);
INSERT INTO `os_patent_affair` VALUES (27884, 1593705600, '2', 1, '2020-07-03 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-06-09 | PUBLICATION | CN', '', 23814);
INSERT INTO `os_patent_affair` VALUES (27885, 1593705600, '2', 1, '2020-07-03 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-06-09 | PUBLICATION | CN', '', 23815);
INSERT INTO `os_patent_affair` VALUES (27886, 1593705600, '2', 1, '2020-07-03 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-06-09 | PUBLICATION | CN', '', 23816);
INSERT INTO `os_patent_affair` VALUES (27887, 1649347200, '1', 3, '2022-04-08 | +PATENT GRANT | CN | 2020-07-10 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-06-16 | PUBLICATION | CN', '', 23817);
INSERT INTO `os_patent_affair` VALUES (27888, 1645718400, '1', 2, '2022-02-25 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2020-07-14 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-06-19 | PUBLICATION | CN', '', 23818);
INSERT INTO `os_patent_affair` VALUES (27889, 1648742400, '1', 3, '2022-04-01 | +PATENT GRANT | CN | 2020-07-14 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-06-19 | PUBLICATION | CN', '', 23819);
INSERT INTO `os_patent_affair` VALUES (27890, 1651161600, '1', 2, '2020-07-14 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-06-19 | PUBLICATION | CN', '', 23820);
INSERT INTO `os_patent_affair` VALUES (27891, 1594656000, '2', 1, '2020-07-14 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-06-19 | PUBLICATION | CN', '', 23821);
INSERT INTO `os_patent_affair` VALUES (27892, 1627920000, '1', 3, '2021-08-03 | +PATENT GRANT | CN | 2020-07-17 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-06-23 | PUBLICATION | CN', '', 23822);
INSERT INTO `os_patent_affair` VALUES (27893, 1594915200, '2', 1, '2020-07-17 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-06-23 | PUBLICATION | CN', '', 23823);
INSERT INTO `os_patent_affair` VALUES (27894, 1594915200, '2', 1, '2020-07-17 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-06-23 | PUBLICATION | CN', '', 23824);
INSERT INTO `os_patent_affair` VALUES (27895, 1640880000, '1', 2, '2021-12-31 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2020-07-21 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-06-26 | PUBLICATION | CN', '', 23825);
INSERT INTO `os_patent_affair` VALUES (27896, 1595260800, '2', 1, '2020-07-21 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-06-26 | PUBLICATION | CN', '', 23826);
INSERT INTO `os_patent_affair` VALUES (27897, 1595260800, '2', 1, '2020-07-21 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-06-26 | PUBLICATION | CN', '', 23827);
INSERT INTO `os_patent_affair` VALUES (27898, 1595260800, '2', 1, '2020-07-21 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-06-26 | PUBLICATION | CN', '', 23828);
INSERT INTO `os_patent_affair` VALUES (27899, 1646928000, '1', 2, '2022-03-11 | -INVENTION PATENT APPLICATION DEEMED WITHDRAWN AFTER PUBLICATION | CN | 2020-07-28 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-07-03 | PUBLICATION | CN', '', 23829);
INSERT INTO `os_patent_affair` VALUES (27900, 1617292800, '1', 3, '2021-04-02 | +PATENT GRANT | CN | 2020-07-28 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-07-03 | PUBLICATION | CN', '', 23830);
INSERT INTO `os_patent_affair` VALUES (27901, 1595865600, '2', 1, '2020-07-28 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-07-03 | PUBLICATION | CN', '', 23831);
INSERT INTO `os_patent_affair` VALUES (27902, 1595865600, '2', 1, '2020-07-28 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-07-03 | PUBLICATION | CN', '', 23832);
INSERT INTO `os_patent_affair` VALUES (27903, 1620316800, '1', 3, '2021-05-07 | +PATENT GRANT | CN | 2020-07-31 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-07-07 | PUBLICATION | CN', '', 23833);
INSERT INTO `os_patent_affair` VALUES (27904, 1625500800, '1', 3, '2021-07-06 | +PATENT GRANT | CN | 2020-07-31 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-07-07 | PUBLICATION | CN', '', 23834);
INSERT INTO `os_patent_affair` VALUES (27905, 1596470400, '2', 1, '2020-08-04 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-07-10 | PUBLICATION | CN', '', 23835);
INSERT INTO `os_patent_affair` VALUES (27906, 1597075200, '2', 1, '2020-08-11 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-07-17 | PUBLICATION | CN', '', 23836);
INSERT INTO `os_patent_affair` VALUES (27907, 1597075200, '2', 1, '2020-08-11 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-07-17 | PUBLICATION | CN', '', 23837);
INSERT INTO `os_patent_affair` VALUES (27908, 1646323200, '1', 2, '2022-03-04 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2020-08-21 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-07-28 | PUBLICATION | CN', '', 23838);
INSERT INTO `os_patent_affair` VALUES (27909, 1597939200, '2', 1, '2020-08-21 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-07-28 | PUBLICATION | CN', '', 23839);
INSERT INTO `os_patent_affair` VALUES (27910, 1597939200, '2', 1, '2020-08-21 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-07-28 | PUBLICATION | CN', '', 23840);
INSERT INTO `os_patent_affair` VALUES (27911, 1597939200, '2', 1, '2020-08-21 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-07-28 | PUBLICATION | CN', '', 23841);
INSERT INTO `os_patent_affair` VALUES (27912, 1598284800, '2', 1, '2020-08-25 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-07-31 | PUBLICATION | CN', '', 23842);
INSERT INTO `os_patent_affair` VALUES (27913, 1598284800, '2', 1, '2020-08-25 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-07-31 | PUBLICATION | CN', '', 23843);
INSERT INTO `os_patent_affair` VALUES (27914, 1649088000, '1', 3, '2022-04-05 | +PATENT GRANT | CN | 2020-08-25 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-07-31 | PUBLICATION | CN', '', 23844);
INSERT INTO `os_patent_affair` VALUES (27915, 1598284800, '2', 1, '2020-08-25 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-07-31 | PUBLICATION | CN', '', 23845);
INSERT INTO `os_patent_affair` VALUES (27916, 1598889600, '2', 1, '2020-09-01 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-08-07 | PUBLICATION | CN', '', 23846);
INSERT INTO `os_patent_affair` VALUES (27917, 1599148800, '2', 1, '2020-09-04 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-08-11 | PUBLICATION | CN', '', 23847);
INSERT INTO `os_patent_affair` VALUES (27918, 1628179200, '1', 3, '2021-08-06 | +PATENT GRANT | CN | 2020-09-08 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-08-14 | PUBLICATION | CN', '', 23848);
INSERT INTO `os_patent_affair` VALUES (27919, 1599494400, '2', 1, '2020-09-08 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-08-14 | PUBLICATION | CN', '', 23849);
INSERT INTO `os_patent_affair` VALUES (27920, 1651161600, '1', 2, '2020-09-08 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-08-14 | PUBLICATION | CN', '', 23850);
INSERT INTO `os_patent_affair` VALUES (27921, 1599494400, '2', 1, '2020-09-08 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-08-14 | PUBLICATION | CN', '', 23851);
INSERT INTO `os_patent_affair` VALUES (27922, 1622476800, '1', 3, '2021-06-01 | +PATENT GRANT | CN | 2020-09-11 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-08-18 | PUBLICATION | CN', '', 23852);
INSERT INTO `os_patent_affair` VALUES (27923, 1632412800, '1', 3, '2021-09-24 | +PATENT GRANT | CN | 2020-09-18 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-08-25 | PUBLICATION | CN', '', 23853);
INSERT INTO `os_patent_affair` VALUES (27924, 1600358400, '2', 1, '2020-09-18 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-08-25 | PUBLICATION | CN', '', 23854);
INSERT INTO `os_patent_affair` VALUES (27925, 1637596800, '1', 3, '2021-11-23 | +PATENT GRANT | CN | 2020-09-18 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-08-25 | PUBLICATION | CN', '', 23855);
INSERT INTO `os_patent_affair` VALUES (27926, 1600358400, '2', 1, '2020-09-18 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-08-25 | PUBLICATION | CN', '', 23856);
INSERT INTO `os_patent_affair` VALUES (27927, 1627920000, '1', 3, '2021-08-03 | +PATENT GRANT | CN | 2020-09-18 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-08-25 | PUBLICATION | CN', '', 23857);
INSERT INTO `os_patent_affair` VALUES (27928, 1600358400, '2', 1, '2020-09-18 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-08-25 | PUBLICATION | CN', '', 23858);
INSERT INTO `os_patent_affair` VALUES (27929, 1600358400, '2', 1, '2020-09-18 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-08-25 | PUBLICATION | CN', '', 23859);
INSERT INTO `os_patent_affair` VALUES (27930, 1633622400, '1', 3, '2021-10-08 | +PATENT GRANT | CN | 2020-09-18 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-08-25 | PUBLICATION | CN', '', 23860);
INSERT INTO `os_patent_affair` VALUES (27931, 1600704000, '2', 1, '2020-09-22 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-08-28 | PUBLICATION | CN', '', 23861);
INSERT INTO `os_patent_affair` VALUES (27932, 1600704000, '2', 1, '2020-09-22 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-08-28 | PUBLICATION | CN', '', 23861);
INSERT INTO `os_patent_affair` VALUES (27933, 1600704000, '2', 1, '2020-09-22 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-08-28 | PUBLICATION | CN', '', 23862);
INSERT INTO `os_patent_affair` VALUES (27934, 1600704000, '2', 1, '2020-09-22 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-08-28 | PUBLICATION | CN', '', 23862);
INSERT INTO `os_patent_affair` VALUES (27935, 1602777600, '1', 3, '2020-10-16 | +PATENT GRANT | CN | 2020-09-22 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-08-28 | PUBLICATION | CN', '', 23863);
INSERT INTO `os_patent_affair` VALUES (27936, 1600963200, '2', 1, '2020-09-25 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-09-01 | PUBLICATION | CN', '', 23864);
INSERT INTO `os_patent_affair` VALUES (27937, 1622476800, '1', 3, '2021-06-01 | +PATENT GRANT | CN | 2020-09-25 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-09-01 | PUBLICATION | CN', '', 23865);
INSERT INTO `os_patent_affair` VALUES (27938, 1649952000, '1', 2, '2022-04-15 | -REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION | CN | 2020-09-25 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-09-01 | PUBLICATION | CN', '', 23866);
INSERT INTO `os_patent_affair` VALUES (27939, 1600963200, '2', 1, '2020-09-25 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-09-01 | PUBLICATION | CN', '', 23867);
INSERT INTO `os_patent_affair` VALUES (27940, 1601308800, '2', 1, '2020-09-29 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-09-04 | PUBLICATION | CN', '', 23868);
INSERT INTO `os_patent_affair` VALUES (27941, 1601308800, '2', 1, '2020-09-29 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-09-04 | PUBLICATION | CN', '', 23869);
INSERT INTO `os_patent_affair` VALUES (27942, 1601308800, '2', 1, '2020-09-29 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-09-04 | PUBLICATION | CN', '', 23869);
INSERT INTO `os_patent_affair` VALUES (27943, 1649347200, '1', 3, '2022-04-08 | +PATENT GRANT | CN | 2020-09-29 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-09-04 | PUBLICATION | CN', '', 23870);
INSERT INTO `os_patent_affair` VALUES (27944, 1638460800, '1', 3, '2021-12-03 | +PATENT GRANT | CN | 2020-10-02 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-09-08 | PUBLICATION | CN', '', 23871);
INSERT INTO `os_patent_affair` VALUES (27945, 1632412800, '1', 3, '2021-09-24 | +PATENT GRANT | CN | 2020-10-13 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-09-11 | PUBLICATION | CN', '', 23872);
INSERT INTO `os_patent_affair` VALUES (27946, 1602518400, '2', 1, '2020-10-13 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-09-11 | PUBLICATION | CN', '', 23873);
INSERT INTO `os_patent_affair` VALUES (27947, 1602518400, '2', 1, '2020-10-13 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-09-15 | PUBLICATION | CN', '', 23874);
INSERT INTO `os_patent_affair` VALUES (27948, 1602518400, '2', 1, '2020-10-13 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-09-15 | PUBLICATION | CN', '', 23875);
INSERT INTO `os_patent_affair` VALUES (27949, 1602518400, '2', 1, '2020-10-13 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-09-15 | PUBLICATION | CN', '', 23876);
INSERT INTO `os_patent_affair` VALUES (27950, 1602518400, '2', 1, '2020-10-13 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-09-15 | PUBLICATION | CN', '', 23877);
INSERT INTO `os_patent_affair` VALUES (27951, 1602518400, '2', 1, '2020-10-13 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-09-15 | PUBLICATION | CN', '', 23878);
INSERT INTO `os_patent_affair` VALUES (27952, 1603123200, '2', 1, '2020-10-20 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-09-18 | PUBLICATION | CN', '', 23879);
INSERT INTO `os_patent_affair` VALUES (27953, 1603123200, '2', 1, '2020-10-20 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-09-18 | PUBLICATION | CN', '', 23880);
INSERT INTO `os_patent_affair` VALUES (27954, 1603123200, '2', 1, '2020-10-20 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-09-18 | PUBLICATION | CN', '', 23881);
INSERT INTO `os_patent_affair` VALUES (27955, 1603123200, '2', 1, '2020-10-20 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-09-18 | PUBLICATION | CN', '', 23882);
INSERT INTO `os_patent_affair` VALUES (27956, 1626969600, '1', 3, '2021-07-23 | +PATENT GRANT | CN | 2020-10-20 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-09-18 | PUBLICATION | CN', '', 23883);
INSERT INTO `os_patent_affair` VALUES (27957, 1603123200, '2', 1, '2020-10-20 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-09-18 | PUBLICATION | CN', '', 23884);
INSERT INTO `os_patent_affair` VALUES (27958, 1649347200, '1', 3, '2022-04-08 | +PATENT GRANT | CN | 2020-10-20 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-09-18 | PUBLICATION | CN', '', 23885);
INSERT INTO `os_patent_affair` VALUES (27959, 1603123200, '2', 1, '2020-10-20 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-09-22 | PUBLICATION | CN', '', 23886);
INSERT INTO `os_patent_affair` VALUES (27960, 1603123200, '2', 1, '2020-10-20 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-09-22 | PUBLICATION | CN', '', 23887);
INSERT INTO `os_patent_affair` VALUES (27961, 1603728000, '2', 1, '2020-10-27 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-09-25 | PUBLICATION | CN', '', 23888);
INSERT INTO `os_patent_affair` VALUES (27962, 1603728000, '2', 1, '2020-10-27 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-09-25 | PUBLICATION | CN', '', 23889);
INSERT INTO `os_patent_affair` VALUES (27963, 1603728000, '2', 1, '2020-10-27 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-09-25 | PUBLICATION | CN', '', 23890);
INSERT INTO `os_patent_affair` VALUES (27964, 1603987200, '2', 1, '2020-10-30 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-10-09 | PUBLICATION | CN', '', 23891);
INSERT INTO `os_patent_affair` VALUES (27965, 1603987200, '2', 1, '2020-10-30 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-10-09 | PUBLICATION | CN', '', 23892);
INSERT INTO `os_patent_affair` VALUES (27966, 1603987200, '2', 1, '2020-10-09 | PUBLICATION | CN', '', 23893);
INSERT INTO `os_patent_affair` VALUES (27967, 1603987200, '2', 1, '2020-10-30 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-10-13 | PUBLICATION | CN', '', 23894);
INSERT INTO `os_patent_affair` VALUES (27968, 1604592000, '2', 1, '2020-11-06 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-10-20 | PUBLICATION | CN', '', 23895);
INSERT INTO `os_patent_affair` VALUES (27969, 1633622400, '1', 3, '2021-10-08 | +PATENT GRANT | CN | 2020-11-06 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-10-20 | PUBLICATION | CN', '', 23896);
INSERT INTO `os_patent_affair` VALUES (27970, 1604937600, '2', 1, '2020-11-10 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-10-23 | PUBLICATION | CN', '', 23897);
INSERT INTO `os_patent_affair` VALUES (27971, 1648483200, '1', 3, '2022-03-29 | +PATENT GRANT | CN | 2020-11-17 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-10-30 | PUBLICATION | CN', '', 23898);
INSERT INTO `os_patent_affair` VALUES (27972, 1606147200, '2', 1, '2020-11-24 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-11-06 | PUBLICATION | CN', '', 23899);
INSERT INTO `os_patent_affair` VALUES (27973, 1643644800, '1', 3, '2022-02-01 | +PATENT GRANT | CN | 2020-12-04 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-11-17 | PUBLICATION | CN', '', 23900);
INSERT INTO `os_patent_affair` VALUES (27974, 1607011200, '2', 1, '2020-12-04 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-11-17 | PUBLICATION | CN', '', 23901);
INSERT INTO `os_patent_affair` VALUES (27975, 1632412800, '1', 3, '2021-09-24 | +PATENT GRANT | CN | 2020-12-15 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-11-27 | PUBLICATION | CN', '', 23902);
INSERT INTO `os_patent_affair` VALUES (27976, 1619452800, '1', 3, '2021-04-27 | +PATENT GRANT | CN | 2020-12-15 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-11-27 | PUBLICATION | CN', '', 23903);
INSERT INTO `os_patent_affair` VALUES (27977, 1607961600, '2', 1, '2020-12-15 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-11-27 | PUBLICATION | CN', '', 23904);
INSERT INTO `os_patent_affair` VALUES (27978, 1608220800, '2', 1, '2020-12-18 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-12-01 | PUBLICATION | CN', '', 23905);
INSERT INTO `os_patent_affair` VALUES (27979, 1608220800, '2', 1, '2020-12-18 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-12-01 | PUBLICATION | CN', '', 23906);
INSERT INTO `os_patent_affair` VALUES (27980, 1622476800, '1', 3, '2021-06-01 | +PATENT GRANT | CN | 2020-12-18 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-12-01 | PUBLICATION | CN', '', 23907);
INSERT INTO `os_patent_affair` VALUES (27981, 1645459200, '1', 3, '2022-02-22 | +PATENT GRANT | CN | 2020-12-22 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-12-04 | PUBLICATION | CN', '', 23908);
INSERT INTO `os_patent_affair` VALUES (27982, 1609171200, '2', 1, '2020-12-29 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-12-11 | PUBLICATION | CN', '', 23909);
INSERT INTO `os_patent_affair` VALUES (27983, 1609171200, '2', 1, '2020-12-29 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-12-11 | PUBLICATION | CN', '', 23910);
INSERT INTO `os_patent_affair` VALUES (27984, 1609171200, '2', 1, '2020-12-29 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-12-11 | PUBLICATION | CN', '', 23911);
INSERT INTO `os_patent_affair` VALUES (27985, 1630598400, '1', 3, '2021-09-03 | +PATENT GRANT | CN | 2020-12-29 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-12-11 | PUBLICATION | CN', '', 23912);
INSERT INTO `os_patent_affair` VALUES (27986, 1609430400, '2', 1, '2021-01-01 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-12-15 | PUBLICATION | CN', '', 23913);
INSERT INTO `os_patent_affair` VALUES (27987, 1609430400, '2', 1, '2021-01-01 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-12-15 | PUBLICATION | CN', '', 23914);
INSERT INTO `os_patent_affair` VALUES (27988, 1609776000, '2', 1, '2021-01-05 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-12-18 | PUBLICATION | CN', '', 23915);
INSERT INTO `os_patent_affair` VALUES (27989, 1612195200, '1', 3, '2021-02-02 | +PATENT GRANT | CN | 2021-01-05 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-12-18 | PUBLICATION | CN', '', 23916);
INSERT INTO `os_patent_affair` VALUES (27990, 1649347200, '1', 3, '2022-04-08 | +PATENT GRANT | CN | 2021-01-26 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-01-08 | PUBLICATION | CN', '', 23917);
INSERT INTO `os_patent_affair` VALUES (27991, 1611590400, '2', 1, '2021-01-26 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-01-08 | PUBLICATION | CN', '', 23918);
INSERT INTO `os_patent_affair` VALUES (27992, 1611849600, '2', 1, '2021-01-29 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-01-12 | PUBLICATION | CN', '', 23919);
INSERT INTO `os_patent_affair` VALUES (27993, 1648742400, '1', 2, '2022-04-01 | -INVENTION PATENT APPLICATION DEEMED WITHDRAWN AFTER PUBLICATION | CN | 2021-02-02 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-01-15 | PUBLICATION | CN', '', 23920);
INSERT INTO `os_patent_affair` VALUES (27994, 1630598400, '1', 3, '2021-09-03 | +PATENT GRANT | CN | 2021-02-05 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-01-19 | PUBLICATION | CN', '', 23921);
INSERT INTO `os_patent_affair` VALUES (27995, 1614009600, '2', 1, '2021-02-23 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-02-02 | PUBLICATION | CN', '', 23922);
INSERT INTO `os_patent_affair` VALUES (27996, 1614009600, '2', 1, '2021-02-23 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-02-02 | PUBLICATION | CN', '', 23923);
INSERT INTO `os_patent_affair` VALUES (27997, 1614009600, '2', 1, '2021-02-23 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-02-02 | PUBLICATION | CN', '', 23924);
INSERT INTO `os_patent_affair` VALUES (27998, 1614009600, '2', 1, '2021-02-23 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-02-02 | PUBLICATION | CN', '', 23925);
INSERT INTO `os_patent_affair` VALUES (27999, 1645459200, '1', 3, '2022-02-22 | +PATENT GRANT | CN | 2021-02-23 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-02-02 | PUBLICATION | CN', '', 23926);
INSERT INTO `os_patent_affair` VALUES (28000, 1614268800, '2', 1, '2021-02-26 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-02-05 | PUBLICATION | CN', '', 23927);
INSERT INTO `os_patent_affair` VALUES (28001, 1614268800, '2', 1, '2021-02-26 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-02-05 | PUBLICATION | CN', '', 23928);
INSERT INTO `os_patent_affair` VALUES (28002, 1632412800, '1', 3, '2021-09-24 | +PATENT GRANT | CN | 2021-03-05 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-02-12 | PUBLICATION | CN', '', 23929);
INSERT INTO `os_patent_affair` VALUES (28003, 1615824000, '2', 1, '2021-03-16 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-02-26 | PUBLICATION | CN', '', 23930);
INSERT INTO `os_patent_affair` VALUES (28004, 1615824000, '2', 1, '2021-03-16 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-02-26 | PUBLICATION | CN', '', 23931);
INSERT INTO `os_patent_affair` VALUES (28005, 1615824000, '2', 1, '2021-03-16 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-02-26 | PUBLICATION | CN', '', 23932);
INSERT INTO `os_patent_affair` VALUES (28006, 1615824000, '2', 1, '2021-03-16 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-02-26 | PUBLICATION | CN', '', 23933);
INSERT INTO `os_patent_affair` VALUES (28007, 1643299200, '1', 3, '2022-01-28 | +PATENT GRANT | CN | 2021-03-16 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-02-26 | PUBLICATION | CN', '', 23934);
INSERT INTO `os_patent_affair` VALUES (28008, 1643644800, '1', 3, '2022-02-01 | +PATENT GRANT | CN | 2021-03-16 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-02-26 | PUBLICATION | CN', '', 23935);
INSERT INTO `os_patent_affair` VALUES (28009, 1617292800, '2', 1, '2021-04-02 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-03-16 | PUBLICATION | CN', '', 23936);
INSERT INTO `os_patent_affair` VALUES (28010, 1617897600, '2', 1, '2021-04-09 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-03-23 | PUBLICATION | CN', '', 23937);
INSERT INTO `os_patent_affair` VALUES (28011, 1645459200, '1', 3, '2022-02-22 | +PATENT GRANT | CN | 2021-04-13 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-03-26 | PUBLICATION | CN', '', 23938);
INSERT INTO `os_patent_affair` VALUES (28012, 1618243200, '2', 1, '2021-04-13 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-03-26 | PUBLICATION | CN', '', 23939);
INSERT INTO `os_patent_affair` VALUES (28013, 1618243200, '2', 1, '2021-04-13 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-03-26 | PUBLICATION | CN', '', 23940);
INSERT INTO `os_patent_affair` VALUES (28014, 1619107200, '2', 1, '2021-04-23 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-04-02 | PUBLICATION | CN', '', 23941);
INSERT INTO `os_patent_affair` VALUES (28015, 1643040000, '1', 3, '2022-01-25 | +PATENT GRANT | CN | 2021-04-23 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-04-02 | PUBLICATION | CN', '', 23942);
INSERT INTO `os_patent_affair` VALUES (28016, 1643644800, '1', 3, '2022-02-01 | +PATENT GRANT | CN | 2021-04-27 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-04-09 | PUBLICATION | CN', '', 23943);
INSERT INTO `os_patent_affair` VALUES (28017, 1619452800, '2', 1, '2021-04-27 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-04-09 | PUBLICATION | CN', '', 23944);
INSERT INTO `os_patent_affair` VALUES (28018, 1619452800, '2', 1, '2021-04-27 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-04-09 | PUBLICATION | CN', '', 23945);
INSERT INTO `os_patent_affair` VALUES (28019, 1620057600, '2', 1, '2021-05-04 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-04-16 | PUBLICATION | CN', '', 23946);
INSERT INTO `os_patent_affair` VALUES (28020, 1620316800, '2', 1, '2021-05-07 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-04-20 | PUBLICATION | CN', '', 23947);
INSERT INTO `os_patent_affair` VALUES (28021, 1620662400, '2', 1, '2021-05-11 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-04-23 | PUBLICATION | CN', '', 23948);
INSERT INTO `os_patent_affair` VALUES (28022, 1650902400, '1', 3, '2021-05-21 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-04-30 | PUBLICATION | CN', '', 23949);
INSERT INTO `os_patent_affair` VALUES (28023, 1651507200, '1', 3, '2021-05-25 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-05-07 | PUBLICATION | CN', '', 23950);
INSERT INTO `os_patent_affair` VALUES (28024, 1621872000, '2', 1, '2021-05-25 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-05-07 | PUBLICATION | CN', '', 23951);
INSERT INTO `os_patent_affair` VALUES (28025, 1622476800, '2', 1, '2021-06-01 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-05-14 | PUBLICATION | CN', '', 23952);
INSERT INTO `os_patent_affair` VALUES (28026, 1622476800, '2', 1, '2021-06-01 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-05-14 | PUBLICATION | CN', '', 23953);
INSERT INTO `os_patent_affair` VALUES (28027, 1622476800, '2', 1, '2021-06-01 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-05-14 | PUBLICATION | CN', '', 23954);
INSERT INTO `os_patent_affair` VALUES (28028, 1623340800, '2', 1, '2021-06-11 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-05-25 | PUBLICATION | CN', '', 23955);
INSERT INTO `os_patent_affair` VALUES (28029, 1623686400, '2', 1, '2021-06-15 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-05-28 | PUBLICATION | CN', '', 23956);
INSERT INTO `os_patent_affair` VALUES (28030, 1623686400, '2', 1, '2021-06-15 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-05-28 | PUBLICATION | CN', '', 23957);
INSERT INTO `os_patent_affair` VALUES (28031, 1650902400, '1', 3, '2021-06-15 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-05-28 | PUBLICATION | CN', '', 23958);
INSERT INTO `os_patent_affair` VALUES (28032, 1623945600, '2', 1, '2021-06-18 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-06-01 | PUBLICATION | CN', '', 23959);
INSERT INTO `os_patent_affair` VALUES (28033, 1624291200, '2', 1, '2021-06-22 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-06-04 | PUBLICATION | CN', '', 23960);
INSERT INTO `os_patent_affair` VALUES (28034, 1624291200, '2', 1, '2021-06-22 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-06-04 | PUBLICATION | CN', '', 23961);
INSERT INTO `os_patent_affair` VALUES (28035, 1624291200, '2', 1, '2021-06-22 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-06-04 | PUBLICATION | CN', '', 23962);
INSERT INTO `os_patent_affair` VALUES (28036, 1624291200, '2', 1, '2021-06-22 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-06-04 | PUBLICATION | CN', '', 23963);
INSERT INTO `os_patent_affair` VALUES (28037, 1624550400, '2', 1, '2021-06-25 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-06-08 | PUBLICATION | CN', '', 23964);
INSERT INTO `os_patent_affair` VALUES (28038, 1624550400, '2', 1, '2021-06-25 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-06-08 | PUBLICATION | CN', '', 23965);
INSERT INTO `os_patent_affair` VALUES (28039, 1625155200, '2', 1, '2021-07-02 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-06-11 | PUBLICATION | CN', '', 23966);
INSERT INTO `os_patent_affair` VALUES (28040, 1625155200, '2', 1, '2021-07-02 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-06-11 | PUBLICATION | CN', '', 23967);
INSERT INTO `os_patent_affair` VALUES (28041, 1625500800, '2', 1, '2021-07-06 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-06-18 | PUBLICATION | CN', '', 23968);
INSERT INTO `os_patent_affair` VALUES (28042, 1625760000, '2', 1, '2021-07-09 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-06-22 | PUBLICATION | CN', '', 23969);
INSERT INTO `os_patent_affair` VALUES (28043, 1626105600, '2', 1, '2021-07-13 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-06-25 | PUBLICATION | CN', '', 23970);
INSERT INTO `os_patent_affair` VALUES (28044, 1626364800, '2', 1, '2021-07-16 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-06-29 | PUBLICATION | CN', '', 23971);
INSERT INTO `os_patent_affair` VALUES (28045, 1626364800, '2', 1, '2021-07-16 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-06-29 | PUBLICATION | CN', '', 23972);
INSERT INTO `os_patent_affair` VALUES (28046, 1626364800, '2', 1, '2021-07-16 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-06-29 | PUBLICATION | CN', '', 23973);
INSERT INTO `os_patent_affair` VALUES (28047, 1626364800, '2', 1, '2021-07-16 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-06-29 | PUBLICATION | CN', '', 23974);
INSERT INTO `os_patent_affair` VALUES (28048, 1626710400, '2', 1, '2021-07-20 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-07-02 | PUBLICATION | CN', '', 23975);
INSERT INTO `os_patent_affair` VALUES (28049, 1626969600, '2', 1, '2021-07-23 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-07-06 | PUBLICATION | CN', '', 23976);
INSERT INTO `os_patent_affair` VALUES (28050, 1626969600, '2', 1, '2021-07-23 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-07-06 | PUBLICATION | CN', '', 23977);
INSERT INTO `os_patent_affair` VALUES (28051, 1626969600, '2', 1, '2021-07-23 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-07-06 | PUBLICATION | CN', '', 23978);
INSERT INTO `os_patent_affair` VALUES (28052, 1627315200, '2', 1, '2021-07-27 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-07-09 | PUBLICATION | CN', '', 23979);
INSERT INTO `os_patent_affair` VALUES (28053, 1627315200, '2', 1, '2021-07-27 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-07-09 | PUBLICATION | CN', '', 23980);
INSERT INTO `os_patent_affair` VALUES (28054, 1627920000, '2', 1, '2021-08-03 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-07-16 | PUBLICATION | CN', '', 23981);
INSERT INTO `os_patent_affair` VALUES (28055, 1628179200, '2', 1, '2021-08-06 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-07-20 | PUBLICATION | CN', '', 23982);
INSERT INTO `os_patent_affair` VALUES (28056, 1628524800, '2', 1, '2021-08-10 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-07-23 | PUBLICATION | CN', '', 23983);
INSERT INTO `os_patent_affair` VALUES (28057, 1628784000, '2', 1, '2021-08-13 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-07-27 | PUBLICATION | CN', '', 23984);
INSERT INTO `os_patent_affair` VALUES (28058, 1628784000, '2', 1, '2021-08-13 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-07-27 | PUBLICATION | CN', '', 23985);
INSERT INTO `os_patent_affair` VALUES (28059, 1648742400, '1', 3, '2022-04-01 | +PATENT GRANT | CN | 2021-08-13 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-07-27 | PUBLICATION | CN', '', 23986);
INSERT INTO `os_patent_affair` VALUES (28060, 1629129600, '2', 1, '2021-08-17 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-07-30 | PUBLICATION | CN', '', 23987);
INSERT INTO `os_patent_affair` VALUES (28061, 1629129600, '2', 1, '2021-08-17 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-07-30 | PUBLICATION | CN', '', 23988);
INSERT INTO `os_patent_affair` VALUES (28062, 1629993600, '2', 1, '2021-08-27 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-08-10 | PUBLICATION | CN', '', 23989);
INSERT INTO `os_patent_affair` VALUES (28063, 1630339200, '2', 1, '2021-08-31 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-08-13 | PUBLICATION | CN', '', 23990);
INSERT INTO `os_patent_affair` VALUES (28064, 1631203200, '2', 1, '2021-09-10 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-08-24 | PUBLICATION | CN', '', 23991);
INSERT INTO `os_patent_affair` VALUES (28065, 1631203200, '2', 1, '2021-09-10 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-08-24 | PUBLICATION | CN', '', 23992);
INSERT INTO `os_patent_affair` VALUES (28066, 1631808000, '2', 1, '2021-09-17 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-08-31 | PUBLICATION | CN', '', 23993);
INSERT INTO `os_patent_affair` VALUES (28067, 1631808000, '2', 1, '2021-09-17 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-08-31 | PUBLICATION | CN', '', 23994);
INSERT INTO `os_patent_affair` VALUES (28068, 1631808000, '2', 1, '2021-09-17 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-08-31 | PUBLICATION | CN', '', 23995);
INSERT INTO `os_patent_affair` VALUES (28069, 1632153600, '2', 1, '2021-09-21 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-09-03 | PUBLICATION | CN', '', 23996);
INSERT INTO `os_patent_affair` VALUES (28070, 1632153600, '2', 1, '2021-09-21 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-09-03 | PUBLICATION | CN', '', 23997);
INSERT INTO `os_patent_affair` VALUES (28071, 1632153600, '2', 1, '2021-09-21 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-09-03 | PUBLICATION | CN', '', 23998);
INSERT INTO `os_patent_affair` VALUES (28072, 1632153600, '2', 1, '2021-09-21 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-09-03 | PUBLICATION | CN', '', 23999);
INSERT INTO `os_patent_affair` VALUES (28073, 1632412800, '2', 1, '2021-09-24 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-09-07 | PUBLICATION | CN', '', 24000);
INSERT INTO `os_patent_affair` VALUES (28074, 1632412800, '2', 1, '2021-09-24 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-09-07 | PUBLICATION | CN', '', 24001);
INSERT INTO `os_patent_affair` VALUES (28075, 1632758400, '2', 1, '2021-09-28 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-09-10 | PUBLICATION | CN', '', 24002);
INSERT INTO `os_patent_affair` VALUES (28076, 1633017600, '2', 1, '2021-10-01 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-09-14 | PUBLICATION | CN', '', 24003);
INSERT INTO `os_patent_affair` VALUES (28077, 1633968000, '2', 1, '2021-10-12 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-09-21 | PUBLICATION | CN', '', 24004);
INSERT INTO `os_patent_affair` VALUES (28078, 1634227200, '2', 1, '2021-10-15 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-09-24 | PUBLICATION | CN', '', 24005);
INSERT INTO `os_patent_affair` VALUES (28079, 1634227200, '2', 1, '2021-10-15 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-09-24 | PUBLICATION | CN', '', 24006);
INSERT INTO `os_patent_affair` VALUES (28080, 1634227200, '2', 1, '2021-10-15 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-09-24 | PUBLICATION | CN', '', 24007);
INSERT INTO `os_patent_affair` VALUES (28081, 1634227200, '2', 1, '2021-10-15 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-09-24 | PUBLICATION | CN', '', 24008);
INSERT INTO `os_patent_affair` VALUES (28082, 1634832000, '2', 1, '2021-10-22 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-09-28 | PUBLICATION | CN', '', 24009);
INSERT INTO `os_patent_affair` VALUES (28083, 1634832000, '2', 1, '2021-10-22 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-09-28 | PUBLICATION | CN', '', 24010);
INSERT INTO `os_patent_affair` VALUES (28084, 1635177600, '2', 1, '2021-10-26 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-10-01 | PUBLICATION | CN', '', 24011);
INSERT INTO `os_patent_affair` VALUES (28085, 1635177600, '2', 1, '2021-10-26 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-10-08 | PUBLICATION | CN', '', 24012);
INSERT INTO `os_patent_affair` VALUES (28086, 1635782400, '2', 1, '2021-11-02 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-10-15 | PUBLICATION | CN', '', 24013);
INSERT INTO `os_patent_affair` VALUES (28087, 1636041600, '2', 1, '2021-11-05 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-10-19 | PUBLICATION | CN', '', 24014);
INSERT INTO `os_patent_affair` VALUES (28088, 1636387200, '2', 1, '2021-11-09 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-10-22 | PUBLICATION | CN', '', 24015);
INSERT INTO `os_patent_affair` VALUES (28089, 1636387200, '2', 1, '2021-11-09 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-10-22 | PUBLICATION | CN', '', 24016);
INSERT INTO `os_patent_affair` VALUES (28090, 1636387200, '2', 1, '2021-11-09 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-10-22 | PUBLICATION | CN', '', 24017);
INSERT INTO `os_patent_affair` VALUES (28091, 1636992000, '2', 1, NULL, '', 24018);
INSERT INTO `os_patent_affair` VALUES (28092, 1636992000, '2', 1, '2021-11-16 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-10-29 | PUBLICATION | CN', '', 24019);
INSERT INTO `os_patent_affair` VALUES (28093, 1637251200, '2', 1, '2021-11-19 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-11-02 | PUBLICATION | CN', '', 24020);
INSERT INTO `os_patent_affair` VALUES (28094, 1637251200, '2', 1, '2021-11-02 | PUBLICATION | CN', '', 24021);
INSERT INTO `os_patent_affair` VALUES (28095, 1637251200, '2', 1, '2021-11-02 | PUBLICATION | CN', '', 24022);
INSERT INTO `os_patent_affair` VALUES (28096, 1637856000, '2', 1, '2021-11-26 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-11-09 | PUBLICATION | CN', '', 24023);
INSERT INTO `os_patent_affair` VALUES (28097, 1637856000, '2', 1, '2021-11-26 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-11-09 | PUBLICATION | CN', '', 24024);
INSERT INTO `os_patent_affair` VALUES (28098, 1637856000, '2', 1, '2021-11-26 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-11-09 | PUBLICATION | CN', '', 24025);
INSERT INTO `os_patent_affair` VALUES (28099, 1638201600, '2', 1, '2021-11-30 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-11-12 | PUBLICATION | CN', '', 24026);
INSERT INTO `os_patent_affair` VALUES (28100, 1639065600, '2', 1, '2021-12-10 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-11-23 | PUBLICATION | CN', '', 24027);
INSERT INTO `os_patent_affair` VALUES (28101, 1639065600, '2', 1, '2021-12-10 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-11-23 | PUBLICATION | CN', '', 24028);
INSERT INTO `os_patent_affair` VALUES (28102, 1639065600, '2', 1, '2021-12-10 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-11-23 | PUBLICATION | CN', '', 24029);
INSERT INTO `os_patent_affair` VALUES (28103, 1639411200, '2', 1, '2021-12-14 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-11-26 | PUBLICATION | CN', '', 24030);
INSERT INTO `os_patent_affair` VALUES (28104, 1639670400, '2', 1, '2021-12-17 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-11-30 | PUBLICATION | CN', '', 24031);
INSERT INTO `os_patent_affair` VALUES (28105, 1640016000, '2', 1, '2021-12-21 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-12-03 | PUBLICATION | CN', '', 24032);
INSERT INTO `os_patent_affair` VALUES (28106, 1640016000, '2', 1, '2021-12-21 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-12-03 | PUBLICATION | CN', '', 24033);
INSERT INTO `os_patent_affair` VALUES (28107, 1640016000, '2', 1, '2021-12-21 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-12-03 | PUBLICATION | CN', '', 24034);
INSERT INTO `os_patent_affair` VALUES (28108, 1640275200, '2', 1, '2021-12-24 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-12-07 | PUBLICATION | CN', '', 24035);
INSERT INTO `os_patent_affair` VALUES (28109, 1640620800, '2', 1, '2021-12-28 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-12-10 | PUBLICATION | CN', '', 24036);
INSERT INTO `os_patent_affair` VALUES (28110, 1640620800, '2', 1, '2021-12-28 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-12-10 | PUBLICATION | CN', '', 24037);
INSERT INTO `os_patent_affair` VALUES (28111, 1641225600, '2', 1, '2022-01-04 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-12-17 | PUBLICATION | CN', '', 24038);
INSERT INTO `os_patent_affair` VALUES (28112, 1641830400, '2', 1, '2022-01-11 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-12-24 | PUBLICATION | CN', '', 24039);
INSERT INTO `os_patent_affair` VALUES (28113, 1643644800, '2', 1, '2022-02-01 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2022-01-14 | PUBLICATION | CN', '', 24040);
INSERT INTO `os_patent_affair` VALUES (28114, 1644854400, '2', 1, '2022-02-15 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2022-01-25 | PUBLICATION | CN', '', 24041);
INSERT INTO `os_patent_affair` VALUES (28115, 1645113600, '2', 1, '2022-02-18 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2022-01-28 | PUBLICATION | CN', '', 24042);
INSERT INTO `os_patent_affair` VALUES (28116, 1645459200, '2', 1, '2022-02-22 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2022-02-01 | PUBLICATION | CN', '', 24043);
INSERT INTO `os_patent_affair` VALUES (28117, 1645718400, '2', 1, '2022-02-25 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2022-02-08 | PUBLICATION | CN', '', 24044);
INSERT INTO `os_patent_affair` VALUES (28118, 1645718400, '2', 1, '2022-02-25 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2022-02-08 | PUBLICATION | CN', '', 24045);
INSERT INTO `os_patent_affair` VALUES (28119, 1645718400, '2', 1, '2022-02-25 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2022-02-08 | PUBLICATION | CN', '', 24046);
INSERT INTO `os_patent_affair` VALUES (28120, 1646064000, '2', 1, '2022-03-01 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2022-02-11 | PUBLICATION | CN', '', 24047);
INSERT INTO `os_patent_affair` VALUES (28121, 1646064000, '2', 1, '2022-03-01 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2022-02-11 | PUBLICATION | CN', '', 24048);
INSERT INTO `os_patent_affair` VALUES (28122, 1646064000, '2', 1, '2022-03-01 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2022-02-11 | PUBLICATION | CN', '', 24049);
INSERT INTO `os_patent_affair` VALUES (28123, 1646064000, '2', 1, '2022-03-01 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2022-02-11 | PUBLICATION | CN', '', 24050);
INSERT INTO `os_patent_affair` VALUES (28124, 1646064000, '2', 1, '2022-03-01 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2022-02-11 | PUBLICATION | CN', '', 24051);
INSERT INTO `os_patent_affair` VALUES (28125, 1635782400, '2', 2, '2021-11-02 | -EXPIRY OF PATENT TERM | CN | 2012-05-30 | +GRANT OF PATENT OR UTILITY MODEL | CN', '', 24052);
INSERT INTO `os_patent_affair` VALUES (28126, 1509638400, '1', 3, '2021-03-16 | CHANGE IN THE NAME OR TITLE OF A PATENT HOLDER | CN | 2017-11-03 | +PATENT GRANT | CN', '', 24053);
INSERT INTO `os_patent_affair` VALUES (28127, 1554998400, '1', 3, '2019-04-12 | +PATENT GRANT | CN', '', 24054);
INSERT INTO `os_patent_affair` VALUES (28128, 1554998400, '2', 3, '2019-04-12 | +PATENT GRANT | CN', '', 24054);
INSERT INTO `os_patent_affair` VALUES (28129, 1558627200, '1', 3, '2019-05-24 | +PATENT GRANT | CN', '', 24055);
INSERT INTO `os_patent_affair` VALUES (28130, 1564416000, '1', 3, '2019-07-30 | +PATENT GRANT | CN', '', 24056);
INSERT INTO `os_patent_affair` VALUES (28131, 1564416000, '2', 3, '2019-07-30 | +PATENT GRANT | CN', '', 24056);
INSERT INTO `os_patent_affair` VALUES (28132, 1565884800, '1', 3, '2019-08-16 | +PATENT GRANT | CN', '', 24057);
INSERT INTO `os_patent_affair` VALUES (28133, 1569513600, '1', 3, '2019-09-27 | +PATENT GRANT | CN', '', 24058);
INSERT INTO `os_patent_affair` VALUES (28134, 1569513600, '2', 3, '2019-09-27 | +PATENT GRANT | CN', '', 24058);
INSERT INTO `os_patent_affair` VALUES (28135, 1593446400, '1', 3, '2020-06-30 | +PATENT GRANT | CN', '', 24059);
INSERT INTO `os_patent_affair` VALUES (28136, 1593446400, '2', 3, '2020-06-30 | +PATENT GRANT | CN', '', 24059);
INSERT INTO `os_patent_affair` VALUES (28137, 1593446400, '1', 3, '2020-06-30 | +PATENT GRANT | CN', '', 24060);
INSERT INTO `os_patent_affair` VALUES (28138, 1593446400, '2', 3, '2020-06-30 | +PATENT GRANT | CN', '', 24060);
INSERT INTO `os_patent_affair` VALUES (28139, 1609430400, '1', 3, '2021-01-01 | +PATENT GRANT | CN', '', 24061);
INSERT INTO `os_patent_affair` VALUES (28140, 1609430400, '2', 3, '2021-01-01 | +PATENT GRANT | CN', '', 24061);
INSERT INTO `os_patent_affair` VALUES (28141, 1609430400, '1', 3, '2021-01-01 | +PATENT GRANT | CN', '', 24062);
INSERT INTO `os_patent_affair` VALUES (28142, 1609430400, '2', 3, '2021-01-01 | +PATENT GRANT | CN', '', 24062);
INSERT INTO `os_patent_affair` VALUES (28143, 1609430400, '1', 3, '2021-01-01 | +PATENT GRANT | CN', '', 24063);
INSERT INTO `os_patent_affair` VALUES (28144, 1609430400, '2', 3, '2021-01-01 | +PATENT GRANT | CN', '', 24063);
INSERT INTO `os_patent_affair` VALUES (28145, 1610640000, '1', 3, '2021-01-15 | +PATENT GRANT | CN', '', 24064);
INSERT INTO `os_patent_affair` VALUES (30368, 0, '1', 0, NULL, '', 22745);
INSERT INTO `os_patent_affair` VALUES (30369, 0, '1', 0, NULL, '', 22746);
INSERT INTO `os_patent_affair` VALUES (30370, 0, '1', 0, NULL, '', 22748);
INSERT INTO `os_patent_affair` VALUES (30371, 0, '1', 0, NULL, '', 22749);
INSERT INTO `os_patent_affair` VALUES (30372, 0, '1', 0, NULL, '', 22751);
INSERT INTO `os_patent_affair` VALUES (30373, 0, '1', 0, NULL, '', 22752);
INSERT INTO `os_patent_affair` VALUES (30374, 0, '1', 0, NULL, '', 22753);
INSERT INTO `os_patent_affair` VALUES (30375, 0, '1', 0, NULL, '', 22754);
INSERT INTO `os_patent_affair` VALUES (30376, 0, '1', 0, NULL, '', 22755);
INSERT INTO `os_patent_affair` VALUES (30377, 0, '1', 0, NULL, '', 22756);
INSERT INTO `os_patent_affair` VALUES (30378, 0, '2', 0, NULL, '', 22756);
INSERT INTO `os_patent_affair` VALUES (30379, 0, '1', 0, NULL, '', 22757);
INSERT INTO `os_patent_affair` VALUES (30380, 0, '1', 0, NULL, '', 22758);
INSERT INTO `os_patent_affair` VALUES (30381, 0, '2', 0, NULL, '', 22758);
INSERT INTO `os_patent_affair` VALUES (30382, 0, '1', 0, NULL, '', 22759);
INSERT INTO `os_patent_affair` VALUES (30383, 0, '1', 0, NULL, '', 22760);
INSERT INTO `os_patent_affair` VALUES (30384, 0, '2', 0, NULL, '', 22760);
INSERT INTO `os_patent_affair` VALUES (30385, 0, '1', 0, NULL, '', 22761);
INSERT INTO `os_patent_affair` VALUES (30386, 0, '2', 0, NULL, '', 22761);
INSERT INTO `os_patent_affair` VALUES (30387, 0, '1', 0, NULL, '', 22762);
INSERT INTO `os_patent_affair` VALUES (30388, 0, '1', 0, NULL, '', 22763);
INSERT INTO `os_patent_affair` VALUES (30389, 0, '1', 0, NULL, '', 22764);
INSERT INTO `os_patent_affair` VALUES (30390, 0, '1', 0, NULL, '', 22765);
INSERT INTO `os_patent_affair` VALUES (30391, 0, '2', 0, NULL, '', 22765);
INSERT INTO `os_patent_affair` VALUES (30392, 0, '1', 0, NULL, '', 22766);
INSERT INTO `os_patent_affair` VALUES (30393, 0, '2', 0, NULL, '', 22766);
INSERT INTO `os_patent_affair` VALUES (30394, 0, '1', 0, NULL, '', 22767);
INSERT INTO `os_patent_affair` VALUES (30395, 0, '2', 0, NULL, '', 22767);
INSERT INTO `os_patent_affair` VALUES (30396, 0, '1', 0, NULL, '', 22768);
INSERT INTO `os_patent_affair` VALUES (30397, 0, '2', 0, NULL, '', 22768);
INSERT INTO `os_patent_affair` VALUES (30398, 0, '1', 0, NULL, '', 22769);
INSERT INTO `os_patent_affair` VALUES (30399, 0, '2', 0, NULL, '', 22769);
INSERT INTO `os_patent_affair` VALUES (30400, 0, '1', 0, NULL, '', 22770);
INSERT INTO `os_patent_affair` VALUES (30401, 0, '1', 0, NULL, '', 22771);
INSERT INTO `os_patent_affair` VALUES (30402, 0, '2', 0, NULL, '', 22771);
INSERT INTO `os_patent_affair` VALUES (30403, 0, '1', 0, NULL, '', 22772);
INSERT INTO `os_patent_affair` VALUES (30404, 0, '1', 0, NULL, '', 22773);
INSERT INTO `os_patent_affair` VALUES (30405, 0, '2', 0, NULL, '', 22773);
INSERT INTO `os_patent_affair` VALUES (30406, 0, '1', 0, NULL, '', 22774);
INSERT INTO `os_patent_affair` VALUES (30407, 0, '2', 0, NULL, '', 22774);
INSERT INTO `os_patent_affair` VALUES (30408, 0, '1', 0, NULL, '', 22775);
INSERT INTO `os_patent_affair` VALUES (30409, 0, '1', 0, NULL, '', 22776);
INSERT INTO `os_patent_affair` VALUES (30410, 0, '2', 0, NULL, '', 22776);
INSERT INTO `os_patent_affair` VALUES (30411, 0, '1', 0, NULL, '', 22777);
INSERT INTO `os_patent_affair` VALUES (30412, 0, '2', 0, NULL, '', 22777);
INSERT INTO `os_patent_affair` VALUES (30413, 0, '1', 0, NULL, '', 22778);
INSERT INTO `os_patent_affair` VALUES (30414, 0, '2', 0, NULL, '', 22778);
INSERT INTO `os_patent_affair` VALUES (30415, 0, '1', 0, NULL, '', 22779);
INSERT INTO `os_patent_affair` VALUES (30416, 0, '2', 0, NULL, '', 22779);
INSERT INTO `os_patent_affair` VALUES (30417, 0, '1', 0, NULL, '', 22780);
INSERT INTO `os_patent_affair` VALUES (30418, 0, '2', 0, NULL, '', 22780);
INSERT INTO `os_patent_affair` VALUES (30419, 0, '1', 0, NULL, '', 22781);
INSERT INTO `os_patent_affair` VALUES (30420, 0, '2', 0, NULL, '', 22781);
INSERT INTO `os_patent_affair` VALUES (30421, 0, '1', 0, NULL, '', 22782);
INSERT INTO `os_patent_affair` VALUES (30422, 0, '1', 0, NULL, '', 22783);
INSERT INTO `os_patent_affair` VALUES (30423, 0, '2', 0, NULL, '', 22783);
INSERT INTO `os_patent_affair` VALUES (30424, 0, '1', 0, NULL, '', 22784);
INSERT INTO `os_patent_affair` VALUES (30425, 0, '2', 0, NULL, '', 22784);
INSERT INTO `os_patent_affair` VALUES (30426, 0, '1', 0, NULL, '', 22785);
INSERT INTO `os_patent_affair` VALUES (30427, 0, '2', 0, NULL, '', 22785);
INSERT INTO `os_patent_affair` VALUES (30428, 0, '1', 0, NULL, '', 22786);
INSERT INTO `os_patent_affair` VALUES (30429, 0, '1', 0, NULL, '', 22787);
INSERT INTO `os_patent_affair` VALUES (30430, 0, '2', 0, NULL, '', 22787);
INSERT INTO `os_patent_affair` VALUES (30431, 0, '1', 0, NULL, '', 22788);
INSERT INTO `os_patent_affair` VALUES (30432, 0, '2', 0, NULL, '', 22788);
INSERT INTO `os_patent_affair` VALUES (30433, 0, '1', 0, NULL, '', 22789);
INSERT INTO `os_patent_affair` VALUES (30434, 0, '2', 0, NULL, '', 22789);
INSERT INTO `os_patent_affair` VALUES (30435, 0, '1', 0, NULL, '', 22790);
INSERT INTO `os_patent_affair` VALUES (30436, 0, '2', 0, NULL, '', 22790);
INSERT INTO `os_patent_affair` VALUES (30437, 0, '1', 0, NULL, '', 22791);
INSERT INTO `os_patent_affair` VALUES (30438, 0, '1', 0, NULL, '', 22792);
INSERT INTO `os_patent_affair` VALUES (30439, 0, '1', 0, NULL, '', 22793);
INSERT INTO `os_patent_affair` VALUES (30440, 0, '2', 0, NULL, '', 22793);
INSERT INTO `os_patent_affair` VALUES (30441, 0, '1', 0, NULL, '', 22794);
INSERT INTO `os_patent_affair` VALUES (30442, 0, '1', 0, NULL, '', 22795);
INSERT INTO `os_patent_affair` VALUES (30443, 0, '1', 0, NULL, '', 22796);
INSERT INTO `os_patent_affair` VALUES (30444, 0, '1', 0, NULL, '', 22797);
INSERT INTO `os_patent_affair` VALUES (30445, 0, '2', 0, NULL, '', 22797);
INSERT INTO `os_patent_affair` VALUES (30446, 0, '1', 0, NULL, '', 22798);
INSERT INTO `os_patent_affair` VALUES (30447, 0, '2', 0, NULL, '', 22798);
INSERT INTO `os_patent_affair` VALUES (30448, 0, '1', 0, NULL, '', 22799);
INSERT INTO `os_patent_affair` VALUES (30449, 0, '2', 0, NULL, '', 22799);
INSERT INTO `os_patent_affair` VALUES (30450, 0, '1', 0, NULL, '', 22800);
INSERT INTO `os_patent_affair` VALUES (30451, 0, '1', 0, NULL, '', 22801);
INSERT INTO `os_patent_affair` VALUES (30452, 0, '2', 0, NULL, '', 22801);
INSERT INTO `os_patent_affair` VALUES (30453, 0, '1', 0, NULL, '', 22802);
INSERT INTO `os_patent_affair` VALUES (30454, 0, '1', 0, NULL, '', 22803);
INSERT INTO `os_patent_affair` VALUES (30455, 0, '1', 0, NULL, '', 22804);
INSERT INTO `os_patent_affair` VALUES (30456, 0, '2', 0, NULL, '', 22804);
INSERT INTO `os_patent_affair` VALUES (30457, 0, '1', 0, NULL, '', 22805);
INSERT INTO `os_patent_affair` VALUES (30458, 0, '2', 0, NULL, '', 22805);
INSERT INTO `os_patent_affair` VALUES (30459, 0, '1', 0, NULL, '', 22806);
INSERT INTO `os_patent_affair` VALUES (30460, 0, '2', 0, NULL, '', 22806);
INSERT INTO `os_patent_affair` VALUES (30461, 0, '1', 0, NULL, '', 22807);
INSERT INTO `os_patent_affair` VALUES (30462, 0, '2', 0, NULL, '', 22807);
INSERT INTO `os_patent_affair` VALUES (30463, 0, '1', 0, NULL, '', 22808);
INSERT INTO `os_patent_affair` VALUES (30464, 0, '1', 0, NULL, '', 22808);
INSERT INTO `os_patent_affair` VALUES (30465, 0, '1', 0, NULL, '', 22809);
INSERT INTO `os_patent_affair` VALUES (30466, 0, '2', 0, NULL, '', 22809);
INSERT INTO `os_patent_affair` VALUES (30467, 0, '1', 0, NULL, '', 22809);
INSERT INTO `os_patent_affair` VALUES (30468, 0, '1', 0, NULL, '', 22810);
INSERT INTO `os_patent_affair` VALUES (30469, 0, '2', 0, NULL, '', 22810);
INSERT INTO `os_patent_affair` VALUES (30470, 0, '1', 0, NULL, '', 22811);
INSERT INTO `os_patent_affair` VALUES (30471, 0, '2', 0, NULL, '', 22811);
INSERT INTO `os_patent_affair` VALUES (30472, 0, '1', 0, NULL, '', 22812);
INSERT INTO `os_patent_affair` VALUES (30473, 0, '1', 0, NULL, '', 22813);
INSERT INTO `os_patent_affair` VALUES (30474, 0, '2', 0, NULL, '', 22813);
INSERT INTO `os_patent_affair` VALUES (30475, 0, '1', 0, NULL, '', 22814);
INSERT INTO `os_patent_affair` VALUES (30476, 0, '2', 0, NULL, '', 22814);
INSERT INTO `os_patent_affair` VALUES (30477, 0, '1', 0, NULL, '', 22815);
INSERT INTO `os_patent_affair` VALUES (30478, 0, '2', 0, NULL, '', 22815);
INSERT INTO `os_patent_affair` VALUES (30479, 0, '1', 0, NULL, '', 22816);
INSERT INTO `os_patent_affair` VALUES (30480, 0, '1', 0, NULL, '', 22817);
INSERT INTO `os_patent_affair` VALUES (30481, 0, '2', 0, NULL, '', 22817);
INSERT INTO `os_patent_affair` VALUES (30482, 0, '1', 0, NULL, '', 22818);
INSERT INTO `os_patent_affair` VALUES (30483, 0, '1', 0, NULL, '', 22819);
INSERT INTO `os_patent_affair` VALUES (30484, 0, '1', 0, NULL, '', 22820);
INSERT INTO `os_patent_affair` VALUES (30485, 0, '2', 0, NULL, '', 22820);
INSERT INTO `os_patent_affair` VALUES (30486, 0, '1', 0, NULL, '', 22821);
INSERT INTO `os_patent_affair` VALUES (30487, 0, '2', 0, NULL, '', 22821);
INSERT INTO `os_patent_affair` VALUES (30488, 0, '1', 0, NULL, '', 22822);
INSERT INTO `os_patent_affair` VALUES (30489, 0, '1', 0, NULL, '', 22823);
INSERT INTO `os_patent_affair` VALUES (30490, 0, '1', 0, NULL, '', 22824);
INSERT INTO `os_patent_affair` VALUES (30491, 0, '2', 0, NULL, '', 22824);
INSERT INTO `os_patent_affair` VALUES (30492, 0, '1', 0, NULL, '', 22825);
INSERT INTO `os_patent_affair` VALUES (30493, 0, '2', 0, NULL, '', 22825);
INSERT INTO `os_patent_affair` VALUES (30494, 0, '1', 0, NULL, '', 22826);
INSERT INTO `os_patent_affair` VALUES (30495, 0, '1', 0, NULL, '', 22827);
INSERT INTO `os_patent_affair` VALUES (30496, 0, '1', 0, NULL, '', 22828);
INSERT INTO `os_patent_affair` VALUES (30497, 0, '2', 0, NULL, '', 22828);
INSERT INTO `os_patent_affair` VALUES (30498, 0, '1', 0, NULL, '', 22829);
INSERT INTO `os_patent_affair` VALUES (30499, 0, '1', 0, NULL, '', 22830);
INSERT INTO `os_patent_affair` VALUES (30500, 0, '2', 0, NULL, '', 22830);
INSERT INTO `os_patent_affair` VALUES (30501, 0, '1', 0, NULL, '', 22831);
INSERT INTO `os_patent_affair` VALUES (30502, 0, '2', 0, NULL, '', 22831);
INSERT INTO `os_patent_affair` VALUES (30503, 0, '1', 0, NULL, '', 22832);
INSERT INTO `os_patent_affair` VALUES (30504, 0, '1', 0, NULL, '', 22833);
INSERT INTO `os_patent_affair` VALUES (30505, 0, '1', 0, NULL, '', 22834);
INSERT INTO `os_patent_affair` VALUES (30506, 0, '1', 0, NULL, '', 22835);
INSERT INTO `os_patent_affair` VALUES (30507, 0, '2', 0, NULL, '', 22835);
INSERT INTO `os_patent_affair` VALUES (30508, 0, '1', 0, NULL, '', 22836);
INSERT INTO `os_patent_affair` VALUES (30509, 0, '1', 0, NULL, '', 22837);
INSERT INTO `os_patent_affair` VALUES (30510, 0, '1', 0, NULL, '', 22838);
INSERT INTO `os_patent_affair` VALUES (30511, 0, '2', 0, NULL, '', 22838);
INSERT INTO `os_patent_affair` VALUES (30512, 0, '1', 0, NULL, '', 22839);
INSERT INTO `os_patent_affair` VALUES (30513, 0, '2', 0, NULL, '', 22839);
INSERT INTO `os_patent_affair` VALUES (30514, 0, '1', 0, NULL, '', 22840);
INSERT INTO `os_patent_affair` VALUES (30515, 0, '2', 0, NULL, '', 22840);
INSERT INTO `os_patent_affair` VALUES (30516, 0, '1', 0, NULL, '', 22841);
INSERT INTO `os_patent_affair` VALUES (30517, 0, '2', 0, NULL, '', 22841);
INSERT INTO `os_patent_affair` VALUES (30518, 0, '1', 0, NULL, '', 22842);
INSERT INTO `os_patent_affair` VALUES (30519, 0, '2', 0, NULL, '', 22842);
INSERT INTO `os_patent_affair` VALUES (30520, 0, '1', 0, NULL, '', 22843);
INSERT INTO `os_patent_affair` VALUES (30521, 0, '2', 0, NULL, '', 22843);
INSERT INTO `os_patent_affair` VALUES (30522, 0, '1', 0, NULL, '', 22844);
INSERT INTO `os_patent_affair` VALUES (30523, 0, '2', 0, NULL, '', 22844);
INSERT INTO `os_patent_affair` VALUES (30524, 0, '1', 0, NULL, '', 22845);
INSERT INTO `os_patent_affair` VALUES (30525, 0, '1', 0, NULL, '', 22846);
INSERT INTO `os_patent_affair` VALUES (30526, 0, '2', 0, NULL, '', 22846);
INSERT INTO `os_patent_affair` VALUES (30527, 0, '1', 0, NULL, '', 22847);
INSERT INTO `os_patent_affair` VALUES (30528, 0, '1', 0, NULL, '', 22848);
INSERT INTO `os_patent_affair` VALUES (30529, 0, '2', 0, NULL, '', 22848);
INSERT INTO `os_patent_affair` VALUES (30530, 0, '1', 0, NULL, '', 22849);
INSERT INTO `os_patent_affair` VALUES (30531, 0, '1', 0, NULL, '', 22850);
INSERT INTO `os_patent_affair` VALUES (30532, 0, '1', 0, NULL, '', 22851);
INSERT INTO `os_patent_affair` VALUES (30533, 0, '2', 0, NULL, '', 22851);
INSERT INTO `os_patent_affair` VALUES (30534, 0, '1', 0, NULL, '', 22852);
INSERT INTO `os_patent_affair` VALUES (30535, 0, '2', 0, NULL, '', 22852);
INSERT INTO `os_patent_affair` VALUES (30536, 0, '1', 0, NULL, '', 22853);
INSERT INTO `os_patent_affair` VALUES (30537, 0, '2', 0, NULL, '', 22853);
INSERT INTO `os_patent_affair` VALUES (30538, 0, '1', 0, NULL, '', 22854);
INSERT INTO `os_patent_affair` VALUES (30539, 0, '1', 0, NULL, '', 22855);
INSERT INTO `os_patent_affair` VALUES (30540, 0, '2', 0, NULL, '', 22855);
INSERT INTO `os_patent_affair` VALUES (30541, 0, '1', 0, NULL, '', 22856);
INSERT INTO `os_patent_affair` VALUES (30542, 0, '2', 0, NULL, '', 22856);
INSERT INTO `os_patent_affair` VALUES (30543, 0, '1', 0, NULL, '', 22857);
INSERT INTO `os_patent_affair` VALUES (30544, 0, '2', 0, NULL, '', 22857);
INSERT INTO `os_patent_affair` VALUES (30545, 0, '1', 0, NULL, '', 22858);
INSERT INTO `os_patent_affair` VALUES (30546, 0, '2', 0, NULL, '', 22858);
INSERT INTO `os_patent_affair` VALUES (30547, 0, '1', 0, NULL, '', 22859);
INSERT INTO `os_patent_affair` VALUES (30548, 0, '2', 0, NULL, '', 22859);
INSERT INTO `os_patent_affair` VALUES (30549, 0, '1', 0, NULL, '', 22860);
INSERT INTO `os_patent_affair` VALUES (30550, 0, '2', 0, NULL, '', 22860);
INSERT INTO `os_patent_affair` VALUES (30551, 0, '1', 0, NULL, '', 22861);
INSERT INTO `os_patent_affair` VALUES (30552, 0, '1', 0, NULL, '', 22862);
INSERT INTO `os_patent_affair` VALUES (30553, 0, '1', 0, NULL, '', 22863);
INSERT INTO `os_patent_affair` VALUES (30554, 0, '2', 0, NULL, '', 22863);
INSERT INTO `os_patent_affair` VALUES (30555, 0, '1', 0, NULL, '', 22864);
INSERT INTO `os_patent_affair` VALUES (30556, 0, '2', 0, NULL, '', 22864);
INSERT INTO `os_patent_affair` VALUES (30557, 0, '1', 0, NULL, '', 22865);
INSERT INTO `os_patent_affair` VALUES (30558, 0, '1', 0, NULL, '', 22866);
INSERT INTO `os_patent_affair` VALUES (30559, 0, '2', 0, NULL, '', 22866);
INSERT INTO `os_patent_affair` VALUES (30560, 0, '1', 0, NULL, '', 22867);
INSERT INTO `os_patent_affair` VALUES (30561, 0, '2', 0, NULL, '', 22867);
INSERT INTO `os_patent_affair` VALUES (30562, 0, '1', 0, NULL, '', 22868);
INSERT INTO `os_patent_affair` VALUES (30563, 0, '2', 0, NULL, '', 22868);
INSERT INTO `os_patent_affair` VALUES (30564, 0, '1', 0, NULL, '', 22869);
INSERT INTO `os_patent_affair` VALUES (30565, 0, '1', 0, NULL, '', 22870);
INSERT INTO `os_patent_affair` VALUES (30566, 0, '2', 0, NULL, '', 22870);
INSERT INTO `os_patent_affair` VALUES (30567, 0, '1', 0, NULL, '', 22871);
INSERT INTO `os_patent_affair` VALUES (30568, 0, '2', 0, NULL, '', 22871);
INSERT INTO `os_patent_affair` VALUES (30569, 0, '1', 0, NULL, '', 22872);
INSERT INTO `os_patent_affair` VALUES (30570, 0, '1', 0, NULL, '', 22873);
INSERT INTO `os_patent_affair` VALUES (30571, 0, '1', 0, NULL, '', 22874);
INSERT INTO `os_patent_affair` VALUES (30572, 0, '2', 0, NULL, '', 22874);
INSERT INTO `os_patent_affair` VALUES (30573, 0, '1', 0, NULL, '', 22875);
INSERT INTO `os_patent_affair` VALUES (30574, 0, '2', 0, NULL, '', 22875);
INSERT INTO `os_patent_affair` VALUES (30575, 0, '1', 0, NULL, '', 22876);
INSERT INTO `os_patent_affair` VALUES (30576, 0, '2', 0, NULL, '', 22876);
INSERT INTO `os_patent_affair` VALUES (30577, 0, '1', 0, NULL, '', 22877);
INSERT INTO `os_patent_affair` VALUES (30578, 0, '1', 0, NULL, '', 22878);
INSERT INTO `os_patent_affair` VALUES (30579, 0, '2', 0, NULL, '', 22879);
INSERT INTO `os_patent_affair` VALUES (30580, 0, '2', 0, NULL, '', 22879);
INSERT INTO `os_patent_affair` VALUES (30581, 0, '1', 0, NULL, '', 22880);
INSERT INTO `os_patent_affair` VALUES (30582, 0, '2', 0, NULL, '', 22880);
INSERT INTO `os_patent_affair` VALUES (30583, 0, '1', 0, NULL, '', 22881);
INSERT INTO `os_patent_affair` VALUES (30584, 0, '1', 0, NULL, '', 22882);
INSERT INTO `os_patent_affair` VALUES (30585, 0, '1', 0, NULL, '', 22883);
INSERT INTO `os_patent_affair` VALUES (30586, 0, '1', 0, NULL, '', 22884);
INSERT INTO `os_patent_affair` VALUES (30587, 0, '2', 0, NULL, '', 22884);
INSERT INTO `os_patent_affair` VALUES (30588, 0, '1', 0, NULL, '', 22885);
INSERT INTO `os_patent_affair` VALUES (30589, 0, '2', 0, NULL, '', 22885);
INSERT INTO `os_patent_affair` VALUES (30590, 0, '1', 0, NULL, '', 22886);
INSERT INTO `os_patent_affair` VALUES (30591, 0, '2', 0, NULL, '', 22886);
INSERT INTO `os_patent_affair` VALUES (30592, 0, '1', 0, NULL, '', 22887);
INSERT INTO `os_patent_affair` VALUES (30593, 0, '2', 0, NULL, '', 22887);
INSERT INTO `os_patent_affair` VALUES (30594, 0, '1', 0, NULL, '', 22888);
INSERT INTO `os_patent_affair` VALUES (30595, 0, '1', 0, NULL, '', 22888);
INSERT INTO `os_patent_affair` VALUES (30596, 0, '1', 0, NULL, '', 22889);
INSERT INTO `os_patent_affair` VALUES (30597, 0, '1', 0, NULL, '', 22890);
INSERT INTO `os_patent_affair` VALUES (30598, 0, '1', 0, NULL, '', 22891);
INSERT INTO `os_patent_affair` VALUES (30599, 0, '2', 0, NULL, '', 22891);
INSERT INTO `os_patent_affair` VALUES (30600, 0, '1', 0, NULL, '', 22892);
INSERT INTO `os_patent_affair` VALUES (30601, 0, '2', 0, NULL, '', 22892);
INSERT INTO `os_patent_affair` VALUES (30602, 0, '1', 0, NULL, '', 22893);
INSERT INTO `os_patent_affair` VALUES (30603, 0, '2', 0, NULL, '', 22893);
INSERT INTO `os_patent_affair` VALUES (30604, 0, '1', 0, NULL, '', 22894);
INSERT INTO `os_patent_affair` VALUES (30605, 0, '2', 0, NULL, '', 22894);
INSERT INTO `os_patent_affair` VALUES (30606, 0, '1', 0, NULL, '', 22895);
INSERT INTO `os_patent_affair` VALUES (30607, 0, '1', 0, NULL, '', 22896);
INSERT INTO `os_patent_affair` VALUES (30608, 0, '1', 0, NULL, '', 22897);
INSERT INTO `os_patent_affair` VALUES (30609, 0, '1', 0, NULL, '', 22898);
INSERT INTO `os_patent_affair` VALUES (30610, 0, '1', 0, NULL, '', 22899);
INSERT INTO `os_patent_affair` VALUES (30611, 0, '2', 0, NULL, '', 22899);
INSERT INTO `os_patent_affair` VALUES (30612, 0, '1', 0, NULL, '', 22900);
INSERT INTO `os_patent_affair` VALUES (30613, 0, '2', 0, NULL, '', 22900);
INSERT INTO `os_patent_affair` VALUES (30614, 0, '1', 0, NULL, '', 22901);
INSERT INTO `os_patent_affair` VALUES (30615, 0, '2', 0, NULL, '', 22901);
INSERT INTO `os_patent_affair` VALUES (30616, 0, '1', 0, NULL, '', 22902);
INSERT INTO `os_patent_affair` VALUES (30617, 0, '1', 0, NULL, '', 22903);
INSERT INTO `os_patent_affair` VALUES (30618, 0, '1', 0, NULL, '', 22904);
INSERT INTO `os_patent_affair` VALUES (30619, 0, '1', 0, NULL, '', 22905);
INSERT INTO `os_patent_affair` VALUES (30620, 0, '1', 0, NULL, '', 22906);
INSERT INTO `os_patent_affair` VALUES (30621, 0, '1', 0, NULL, '', 22907);
INSERT INTO `os_patent_affair` VALUES (30622, 0, '1', 0, NULL, '', 22908);
INSERT INTO `os_patent_affair` VALUES (30623, 0, '1', 0, NULL, '', 22909);
INSERT INTO `os_patent_affair` VALUES (30624, 0, '1', 0, NULL, '', 22910);
INSERT INTO `os_patent_affair` VALUES (30625, 0, '1', 0, NULL, '', 22911);
INSERT INTO `os_patent_affair` VALUES (30626, 0, '1', 0, NULL, '', 22912);
INSERT INTO `os_patent_affair` VALUES (30627, 0, '1', 0, NULL, '', 22913);
INSERT INTO `os_patent_affair` VALUES (30628, 0, '1', 0, NULL, '', 22914);
INSERT INTO `os_patent_affair` VALUES (30629, 0, '1', 0, NULL, '', 22915);
INSERT INTO `os_patent_affair` VALUES (30630, 0, '1', 0, NULL, '', 22916);
INSERT INTO `os_patent_affair` VALUES (30631, 0, '2', 0, NULL, '', 22917);
INSERT INTO `os_patent_affair` VALUES (30632, 0, '2', 0, NULL, '', 22917);
INSERT INTO `os_patent_affair` VALUES (30633, 0, '1', 0, NULL, '', 22918);
INSERT INTO `os_patent_affair` VALUES (30634, 0, '1', 0, NULL, '', 22919);
INSERT INTO `os_patent_affair` VALUES (30635, 0, '1', 0, NULL, '', 22920);
INSERT INTO `os_patent_affair` VALUES (30636, 0, '1', 0, NULL, '', 22921);
INSERT INTO `os_patent_affair` VALUES (30637, 0, '2', 0, NULL, '', 22921);
INSERT INTO `os_patent_affair` VALUES (30638, 0, '1', 0, NULL, '', 22922);
INSERT INTO `os_patent_affair` VALUES (30639, 0, '1', 0, NULL, '', 22923);
INSERT INTO `os_patent_affair` VALUES (30640, 0, '1', 0, NULL, '', 22924);
INSERT INTO `os_patent_affair` VALUES (30641, 0, '1', 0, NULL, '', 22925);
INSERT INTO `os_patent_affair` VALUES (30642, 0, '1', 0, NULL, '', 22926);
INSERT INTO `os_patent_affair` VALUES (30643, 0, '1', 0, NULL, '', 22927);
INSERT INTO `os_patent_affair` VALUES (30644, 0, '1', 0, NULL, '', 22928);
INSERT INTO `os_patent_affair` VALUES (30645, 0, '1', 0, NULL, '', 22929);
INSERT INTO `os_patent_affair` VALUES (30646, 0, '1', 0, NULL, '', 22930);
INSERT INTO `os_patent_affair` VALUES (30647, 0, '1', 0, NULL, '', 22932);
INSERT INTO `os_patent_affair` VALUES (30648, 0, '1', 0, NULL, '', 22933);
INSERT INTO `os_patent_affair` VALUES (30649, 0, '1', 0, NULL, '', 22934);
INSERT INTO `os_patent_affair` VALUES (30650, 0, '1', 0, NULL, '', 22935);
INSERT INTO `os_patent_affair` VALUES (30651, 0, '1', 0, NULL, '', 22936);
INSERT INTO `os_patent_affair` VALUES (30652, 0, '1', 0, NULL, '', 22937);
INSERT INTO `os_patent_affair` VALUES (30653, 0, '1', 0, NULL, '', 22938);
INSERT INTO `os_patent_affair` VALUES (30654, 0, '1', 0, NULL, '', 22939);
INSERT INTO `os_patent_affair` VALUES (30655, 0, '1', 0, NULL, '', 22940);
INSERT INTO `os_patent_affair` VALUES (30656, 0, '1', 0, NULL, '', 22941);
INSERT INTO `os_patent_affair` VALUES (30657, 0, '1', 0, NULL, '', 22941);
INSERT INTO `os_patent_affair` VALUES (30658, 0, '1', 0, NULL, '', 22942);
INSERT INTO `os_patent_affair` VALUES (30659, 0, '1', 0, NULL, '', 22943);
INSERT INTO `os_patent_affair` VALUES (30660, 0, '1', 0, NULL, '', 22944);
INSERT INTO `os_patent_affair` VALUES (30661, 0, '1', 0, NULL, '', 22945);
INSERT INTO `os_patent_affair` VALUES (30662, 0, '1', 0, NULL, '', 22946);
INSERT INTO `os_patent_affair` VALUES (30663, 0, '1', 0, NULL, '', 22947);
INSERT INTO `os_patent_affair` VALUES (30664, 0, '1', 0, NULL, '', 22948);
INSERT INTO `os_patent_affair` VALUES (30665, 0, '1', 0, NULL, '', 22949);
INSERT INTO `os_patent_affair` VALUES (30666, 0, '1', 0, NULL, '', 22950);
INSERT INTO `os_patent_affair` VALUES (30667, 0, '1', 0, NULL, '', 22951);
INSERT INTO `os_patent_affair` VALUES (30668, 0, '1', 0, NULL, '', 22952);
INSERT INTO `os_patent_affair` VALUES (30669, 0, '1', 0, NULL, '', 22953);
INSERT INTO `os_patent_affair` VALUES (30670, 0, '1', 0, NULL, '', 22954);
INSERT INTO `os_patent_affair` VALUES (30671, 0, '1', 0, NULL, '', 22955);
INSERT INTO `os_patent_affair` VALUES (30672, 0, '1', 0, NULL, '', 22956);
INSERT INTO `os_patent_affair` VALUES (30673, 0, '2', 0, NULL, '', 22956);
INSERT INTO `os_patent_affair` VALUES (30674, 0, '1', 0, NULL, '', 22957);
INSERT INTO `os_patent_affair` VALUES (30675, 0, '1', 0, NULL, '', 22958);
INSERT INTO `os_patent_affair` VALUES (30676, 0, '1', 0, NULL, '', 22959);
INSERT INTO `os_patent_affair` VALUES (30677, 0, '1', 0, NULL, '', 22960);
INSERT INTO `os_patent_affair` VALUES (30678, 0, '1', 0, NULL, '', 22961);
INSERT INTO `os_patent_affair` VALUES (30679, 0, '1', 0, NULL, '', 22962);
INSERT INTO `os_patent_affair` VALUES (30680, 0, '1', 0, NULL, '', 22963);
INSERT INTO `os_patent_affair` VALUES (30681, 0, '1', 0, NULL, '', 22964);
INSERT INTO `os_patent_affair` VALUES (30682, 0, '1', 0, NULL, '', 22965);
INSERT INTO `os_patent_affair` VALUES (30683, 0, '1', 0, NULL, '', 22966);
INSERT INTO `os_patent_affair` VALUES (30684, 0, '1', 0, NULL, '', 22967);
INSERT INTO `os_patent_affair` VALUES (30685, 0, '1', 0, NULL, '', 22968);
INSERT INTO `os_patent_affair` VALUES (30686, 0, '1', 0, NULL, '', 22969);
INSERT INTO `os_patent_affair` VALUES (30687, 0, '1', 0, NULL, '', 22970);
INSERT INTO `os_patent_affair` VALUES (30688, 0, '1', 0, NULL, '', 22971);
INSERT INTO `os_patent_affair` VALUES (30689, 0, '1', 0, NULL, '', 22972);
INSERT INTO `os_patent_affair` VALUES (30690, 0, '2', 0, NULL, '', 22972);
INSERT INTO `os_patent_affair` VALUES (30691, 0, '1', 0, NULL, '', 22973);
INSERT INTO `os_patent_affair` VALUES (30692, 0, '1', 0, NULL, '', 22974);
INSERT INTO `os_patent_affair` VALUES (30693, 0, '2', 0, NULL, '', 22974);
INSERT INTO `os_patent_affair` VALUES (30694, 0, '1', 0, NULL, '', 22975);
INSERT INTO `os_patent_affair` VALUES (30695, 0, '1', 0, NULL, '', 22976);
INSERT INTO `os_patent_affair` VALUES (30696, 0, '2', 0, NULL, '', 22976);
INSERT INTO `os_patent_affair` VALUES (30697, 0, '1', 0, NULL, '', 22977);
INSERT INTO `os_patent_affair` VALUES (30698, 0, '1', 0, NULL, '', 22978);
INSERT INTO `os_patent_affair` VALUES (30699, 0, '2', 0, NULL, '', 22978);
INSERT INTO `os_patent_affair` VALUES (30700, 0, '1', 0, NULL, '', 22979);
INSERT INTO `os_patent_affair` VALUES (30701, 0, '1', 0, NULL, '', 22980);
INSERT INTO `os_patent_affair` VALUES (30702, 0, '1', 0, NULL, '', 22981);
INSERT INTO `os_patent_affair` VALUES (30703, 0, '1', 0, NULL, '', 22982);
INSERT INTO `os_patent_affair` VALUES (30704, 0, '1', 0, NULL, '', 22983);
INSERT INTO `os_patent_affair` VALUES (30705, 0, '1', 0, NULL, '', 22984);
INSERT INTO `os_patent_affair` VALUES (30706, 0, '1', 0, NULL, '', 22985);
INSERT INTO `os_patent_affair` VALUES (30707, 0, '1', 0, NULL, '', 22986);
INSERT INTO `os_patent_affair` VALUES (30708, 0, '1', 0, NULL, '', 22987);
INSERT INTO `os_patent_affair` VALUES (30709, 0, '1', 0, NULL, '', 22988);
INSERT INTO `os_patent_affair` VALUES (30710, 0, '1', 0, NULL, '', 22989);
INSERT INTO `os_patent_affair` VALUES (30711, 0, '1', 0, NULL, '', 22990);
INSERT INTO `os_patent_affair` VALUES (30712, 0, '1', 0, NULL, '', 22991);
INSERT INTO `os_patent_affair` VALUES (30713, 0, '2', 0, NULL, '', 22991);
INSERT INTO `os_patent_affair` VALUES (30714, 0, '1', 0, NULL, '', 22992);
INSERT INTO `os_patent_affair` VALUES (30715, 0, '1', 0, NULL, '', 22993);
INSERT INTO `os_patent_affair` VALUES (30716, 0, '2', 0, NULL, '', 22993);
INSERT INTO `os_patent_affair` VALUES (30717, 0, '1', 0, NULL, '', 22994);
INSERT INTO `os_patent_affair` VALUES (30718, 0, '1', 0, NULL, '', 22995);
INSERT INTO `os_patent_affair` VALUES (30719, 0, '2', 0, NULL, '', 22996);
INSERT INTO `os_patent_affair` VALUES (30720, 0, '1', 0, NULL, '', 22997);
INSERT INTO `os_patent_affair` VALUES (30721, 0, '1', 0, NULL, '', 22998);
INSERT INTO `os_patent_affair` VALUES (30722, 0, '1', 0, NULL, '', 22999);
INSERT INTO `os_patent_affair` VALUES (30723, 0, '2', 0, NULL, '', 22999);
INSERT INTO `os_patent_affair` VALUES (30724, 0, '1', 0, NULL, '', 23000);
INSERT INTO `os_patent_affair` VALUES (30725, 0, '2', 0, NULL, '', 23000);
INSERT INTO `os_patent_affair` VALUES (30726, 0, '1', 0, NULL, '', 23001);
INSERT INTO `os_patent_affair` VALUES (30727, 0, '2', 0, NULL, '', 23001);
INSERT INTO `os_patent_affair` VALUES (30728, 0, '1', 0, NULL, '', 23002);
INSERT INTO `os_patent_affair` VALUES (30729, 0, '1', 0, NULL, '', 23003);
INSERT INTO `os_patent_affair` VALUES (30730, 0, '1', 0, NULL, '', 23004);
INSERT INTO `os_patent_affair` VALUES (30731, 0, '1', 0, NULL, '', 23005);
INSERT INTO `os_patent_affair` VALUES (30732, 0, '1', 0, NULL, '', 23006);
INSERT INTO `os_patent_affair` VALUES (30733, 0, '1', 0, NULL, '', 23006);
INSERT INTO `os_patent_affair` VALUES (30734, 0, '1', 0, NULL, '', 23007);
INSERT INTO `os_patent_affair` VALUES (30735, 0, '1', 0, NULL, '', 23008);
INSERT INTO `os_patent_affair` VALUES (30736, 0, '1', 0, NULL, '', 23009);
INSERT INTO `os_patent_affair` VALUES (30737, 0, '1', 0, NULL, '', 23010);
INSERT INTO `os_patent_affair` VALUES (30738, 0, '1', 0, NULL, '', 23011);
INSERT INTO `os_patent_affair` VALUES (30739, 0, '1', 0, NULL, '', 23012);
INSERT INTO `os_patent_affair` VALUES (30740, 0, '1', 0, NULL, '', 23013);
INSERT INTO `os_patent_affair` VALUES (30741, 0, '1', 0, NULL, '', 23014);
INSERT INTO `os_patent_affair` VALUES (30742, 0, '1', 0, NULL, '', 23015);
INSERT INTO `os_patent_affair` VALUES (30743, 0, '1', 0, NULL, '', 23015);
INSERT INTO `os_patent_affair` VALUES (30744, 0, '1', 0, NULL, '', 23016);
INSERT INTO `os_patent_affair` VALUES (30745, 0, '1', 0, NULL, '', 23017);
INSERT INTO `os_patent_affair` VALUES (30746, 0, '1', 0, NULL, '', 23018);
INSERT INTO `os_patent_affair` VALUES (30747, 0, '1', 0, NULL, '', 23019);
INSERT INTO `os_patent_affair` VALUES (30748, 0, '1', 0, NULL, '', 23020);
INSERT INTO `os_patent_affair` VALUES (30749, 0, '1', 0, NULL, '', 23021);
INSERT INTO `os_patent_affair` VALUES (30750, 0, '1', 0, NULL, '', 23022);
INSERT INTO `os_patent_affair` VALUES (30751, 0, '1', 0, NULL, '', 23024);
INSERT INTO `os_patent_affair` VALUES (30752, 0, '1', 0, NULL, '', 23025);
INSERT INTO `os_patent_affair` VALUES (30753, 0, '1', 0, NULL, '', 23027);
INSERT INTO `os_patent_affair` VALUES (30754, 0, '1', 0, NULL, '', 23028);
INSERT INTO `os_patent_affair` VALUES (30755, 0, '1', 0, NULL, '', 23029);
INSERT INTO `os_patent_affair` VALUES (30756, 0, '1', 0, NULL, '', 23030);
INSERT INTO `os_patent_affair` VALUES (30757, 0, '1', 0, NULL, '', 23031);
INSERT INTO `os_patent_affair` VALUES (30758, 0, '1', 0, NULL, '', 23032);
INSERT INTO `os_patent_affair` VALUES (30759, 0, '2', 0, NULL, '', 23032);
INSERT INTO `os_patent_affair` VALUES (30760, 0, '1', 0, NULL, '', 23033);
INSERT INTO `os_patent_affair` VALUES (30761, 0, '2', 0, NULL, '', 23033);
INSERT INTO `os_patent_affair` VALUES (30762, 0, '1', 0, NULL, '', 23034);
INSERT INTO `os_patent_affair` VALUES (30763, 0, '2', 0, NULL, '', 23034);
INSERT INTO `os_patent_affair` VALUES (30764, 0, '1', 0, NULL, '', 23035);
INSERT INTO `os_patent_affair` VALUES (30765, 0, '2', 0, NULL, '', 23035);
INSERT INTO `os_patent_affair` VALUES (30766, 0, '1', 0, NULL, '', 23036);
INSERT INTO `os_patent_affair` VALUES (30767, 0, '2', 0, NULL, '', 23036);
INSERT INTO `os_patent_affair` VALUES (30768, 0, '1', 0, NULL, '', 23037);
INSERT INTO `os_patent_affair` VALUES (30769, 0, '1', 0, NULL, '', 23038);
INSERT INTO `os_patent_affair` VALUES (30770, 0, '1', 0, NULL, '', 23040);
INSERT INTO `os_patent_affair` VALUES (30771, 0, '1', 0, NULL, '', 23041);
INSERT INTO `os_patent_affair` VALUES (30772, 0, '1', 0, NULL, '', 23042);
INSERT INTO `os_patent_affair` VALUES (30773, 0, '1', 0, NULL, '', 23044);
INSERT INTO `os_patent_affair` VALUES (30774, 0, '1', 0, NULL, '', 23045);
INSERT INTO `os_patent_affair` VALUES (30775, 0, '1', 0, NULL, '', 23046);
INSERT INTO `os_patent_affair` VALUES (30776, 0, '1', 0, NULL, '', 23047);
INSERT INTO `os_patent_affair` VALUES (30777, 0, '2', 0, NULL, '', 23047);
INSERT INTO `os_patent_affair` VALUES (30778, 0, '1', 0, NULL, '', 23048);
INSERT INTO `os_patent_affair` VALUES (30779, 0, '1', 0, NULL, '', 23049);
INSERT INTO `os_patent_affair` VALUES (30780, 0, '1', 0, NULL, '', 23050);
INSERT INTO `os_patent_affair` VALUES (30781, 0, '1', 0, NULL, '', 23051);
INSERT INTO `os_patent_affair` VALUES (30782, 0, '1', 0, NULL, '', 23052);
INSERT INTO `os_patent_affair` VALUES (30783, 0, '1', 0, NULL, '', 23053);
INSERT INTO `os_patent_affair` VALUES (30784, 0, '1', 0, NULL, '', 23054);
INSERT INTO `os_patent_affair` VALUES (30785, 0, '1', 0, NULL, '', 23055);
INSERT INTO `os_patent_affair` VALUES (30786, 0, '1', 0, NULL, '', 23056);
INSERT INTO `os_patent_affair` VALUES (30787, 0, '2', 0, NULL, '', 23057);
INSERT INTO `os_patent_affair` VALUES (30788, 0, '2', 0, NULL, '', 23057);
INSERT INTO `os_patent_affair` VALUES (30789, 0, '1', 0, NULL, '', 23058);
INSERT INTO `os_patent_affair` VALUES (30790, 0, '2', 0, NULL, '', 23058);
INSERT INTO `os_patent_affair` VALUES (30791, 0, '1', 0, NULL, '', 23059);
INSERT INTO `os_patent_affair` VALUES (30792, 0, '1', 0, NULL, '', 23060);
INSERT INTO `os_patent_affair` VALUES (30793, 0, '1', 0, NULL, '', 23061);
INSERT INTO `os_patent_affair` VALUES (30794, 0, '1', 0, NULL, '', 23062);
INSERT INTO `os_patent_affair` VALUES (30795, 0, '1', 0, NULL, '', 23063);
INSERT INTO `os_patent_affair` VALUES (30796, 0, '1', 0, NULL, '', 23064);
INSERT INTO `os_patent_affair` VALUES (30797, 0, '1', 0, NULL, '', 23065);
INSERT INTO `os_patent_affair` VALUES (30798, 0, '1', 0, NULL, '', 23066);
INSERT INTO `os_patent_affair` VALUES (30799, 0, '2', 0, NULL, '', 23066);
INSERT INTO `os_patent_affair` VALUES (30800, 0, '1', 0, NULL, '', 23067);
INSERT INTO `os_patent_affair` VALUES (30801, 0, '1', 0, NULL, '', 23068);
INSERT INTO `os_patent_affair` VALUES (30802, 0, '1', 0, NULL, '', 23069);
INSERT INTO `os_patent_affair` VALUES (30803, 0, '1', 0, NULL, '', 23070);
INSERT INTO `os_patent_affair` VALUES (30804, 0, '1', 0, NULL, '', 23071);
INSERT INTO `os_patent_affair` VALUES (30805, 0, '1', 0, NULL, '', 23072);
INSERT INTO `os_patent_affair` VALUES (30806, 0, '1', 0, NULL, '', 23073);
INSERT INTO `os_patent_affair` VALUES (30807, 0, '1', 0, NULL, '', 23074);
INSERT INTO `os_patent_affair` VALUES (30808, 0, '1', 0, NULL, '', 23075);
INSERT INTO `os_patent_affair` VALUES (30809, 0, '1', 0, NULL, '', 23076);
INSERT INTO `os_patent_affair` VALUES (30810, 0, '1', 0, NULL, '', 23077);
INSERT INTO `os_patent_affair` VALUES (30811, 0, '1', 0, NULL, '', 23078);
INSERT INTO `os_patent_affair` VALUES (30812, 0, '1', 0, NULL, '', 23079);
INSERT INTO `os_patent_affair` VALUES (30813, 0, '1', 0, NULL, '', 23080);
INSERT INTO `os_patent_affair` VALUES (30814, 0, '1', 0, NULL, '', 23081);
INSERT INTO `os_patent_affair` VALUES (30815, 0, '1', 0, NULL, '', 23082);
INSERT INTO `os_patent_affair` VALUES (30816, 0, '1', 0, NULL, '', 23083);
INSERT INTO `os_patent_affair` VALUES (30817, 0, '1', 0, NULL, '', 23084);
INSERT INTO `os_patent_affair` VALUES (30818, 0, '1', 0, NULL, '', 23085);
INSERT INTO `os_patent_affair` VALUES (30819, 0, '1', 0, NULL, '', 23086);
INSERT INTO `os_patent_affair` VALUES (30820, 0, '1', 0, NULL, '', 23087);
INSERT INTO `os_patent_affair` VALUES (30821, 0, '1', 0, NULL, '', 23088);
INSERT INTO `os_patent_affair` VALUES (30822, 0, '1', 0, NULL, '', 23089);
INSERT INTO `os_patent_affair` VALUES (30823, 0, '1', 0, NULL, '', 23090);
INSERT INTO `os_patent_affair` VALUES (30824, 0, '1', 0, NULL, '', 23091);
INSERT INTO `os_patent_affair` VALUES (30825, 0, '1', 0, NULL, '', 23092);
INSERT INTO `os_patent_affair` VALUES (30826, 0, '1', 0, NULL, '', 23093);
INSERT INTO `os_patent_affair` VALUES (30827, 0, '1', 0, NULL, '', 23094);
INSERT INTO `os_patent_affair` VALUES (30828, 0, '1', 0, NULL, '', 23095);
INSERT INTO `os_patent_affair` VALUES (30829, 0, '1', 0, NULL, '', 23096);
INSERT INTO `os_patent_affair` VALUES (30830, 0, '1', 0, NULL, '', 23097);
INSERT INTO `os_patent_affair` VALUES (30831, 0, '1', 0, NULL, '', 23098);
INSERT INTO `os_patent_affair` VALUES (30832, 0, '1', 0, NULL, '', 23099);
INSERT INTO `os_patent_affair` VALUES (30833, 0, '1', 0, NULL, '', 23100);
INSERT INTO `os_patent_affair` VALUES (30834, 0, '1', 0, NULL, '', 23101);
INSERT INTO `os_patent_affair` VALUES (30835, 0, '1', 0, NULL, '', 23102);
INSERT INTO `os_patent_affair` VALUES (30836, 0, '1', 0, NULL, '', 23103);
INSERT INTO `os_patent_affair` VALUES (30837, 0, '1', 0, NULL, '', 23104);
INSERT INTO `os_patent_affair` VALUES (30838, 0, '1', 0, NULL, '', 23105);
INSERT INTO `os_patent_affair` VALUES (30839, 0, '1', 0, NULL, '', 23106);
INSERT INTO `os_patent_affair` VALUES (30840, 0, '1', 0, NULL, '', 23107);
INSERT INTO `os_patent_affair` VALUES (30841, 0, '1', 0, NULL, '', 23108);
INSERT INTO `os_patent_affair` VALUES (30842, 0, '1', 0, NULL, '', 23109);
INSERT INTO `os_patent_affair` VALUES (30843, 0, '1', 0, NULL, '', 23110);
INSERT INTO `os_patent_affair` VALUES (30844, 0, '1', 0, NULL, '', 23111);
INSERT INTO `os_patent_affair` VALUES (30845, 0, '1', 0, NULL, '', 23112);
INSERT INTO `os_patent_affair` VALUES (30846, 0, '1', 0, NULL, '', 23113);
INSERT INTO `os_patent_affair` VALUES (30847, 0, '1', 0, NULL, '', 23114);
INSERT INTO `os_patent_affair` VALUES (30848, 0, '1', 0, NULL, '', 23115);
INSERT INTO `os_patent_affair` VALUES (30849, 0, '1', 0, NULL, '', 23116);
INSERT INTO `os_patent_affair` VALUES (30850, 0, '1', 0, NULL, '', 23117);
INSERT INTO `os_patent_affair` VALUES (30851, 0, '1', 0, NULL, '', 23118);
INSERT INTO `os_patent_affair` VALUES (30852, 0, '1', 0, NULL, '', 23119);
INSERT INTO `os_patent_affair` VALUES (30853, 0, '1', 0, NULL, '', 23120);
INSERT INTO `os_patent_affair` VALUES (30854, 0, '1', 0, NULL, '', 23121);
INSERT INTO `os_patent_affair` VALUES (30855, 0, '2', 0, NULL, '', 23121);
INSERT INTO `os_patent_affair` VALUES (30856, 0, '1', 0, NULL, '', 23122);
INSERT INTO `os_patent_affair` VALUES (30857, 0, '1', 0, NULL, '', 23123);
INSERT INTO `os_patent_affair` VALUES (30858, 0, '1', 0, NULL, '', 23124);
INSERT INTO `os_patent_affair` VALUES (30859, 0, '1', 0, NULL, '', 23125);
INSERT INTO `os_patent_affair` VALUES (30860, 0, '1', 0, NULL, '', 23126);
INSERT INTO `os_patent_affair` VALUES (30861, 0, '1', 0, NULL, '', 23127);
INSERT INTO `os_patent_affair` VALUES (30862, 0, '1', 0, NULL, '', 23128);
INSERT INTO `os_patent_affair` VALUES (30863, 0, '1', 0, NULL, '', 23129);
INSERT INTO `os_patent_affair` VALUES (30864, 0, '1', 0, NULL, '', 23130);
INSERT INTO `os_patent_affair` VALUES (30865, 0, '2', 0, NULL, '', 23130);
INSERT INTO `os_patent_affair` VALUES (30866, 0, '1', 0, NULL, '', 23131);
INSERT INTO `os_patent_affair` VALUES (30867, 0, '2', 0, NULL, '', 23131);
INSERT INTO `os_patent_affair` VALUES (30868, 0, '1', 0, NULL, '', 23132);
INSERT INTO `os_patent_affair` VALUES (30869, 0, '1', 0, NULL, '', 23133);
INSERT INTO `os_patent_affair` VALUES (30870, 0, '1', 0, NULL, '', 23134);
INSERT INTO `os_patent_affair` VALUES (30871, 0, '1', 0, NULL, '', 23135);
INSERT INTO `os_patent_affair` VALUES (30872, 0, '1', 0, NULL, '', 23136);
INSERT INTO `os_patent_affair` VALUES (30873, 0, '1', 0, NULL, '', 23137);
INSERT INTO `os_patent_affair` VALUES (30874, 0, '1', 0, NULL, '', 23138);
INSERT INTO `os_patent_affair` VALUES (30875, 0, '1', 0, NULL, '', 23139);
INSERT INTO `os_patent_affair` VALUES (30876, 0, '1', 0, NULL, '', 23140);
INSERT INTO `os_patent_affair` VALUES (30877, 0, '1', 0, NULL, '', 23141);
INSERT INTO `os_patent_affair` VALUES (30878, 0, '1', 0, NULL, '', 23142);
INSERT INTO `os_patent_affair` VALUES (30879, 0, '1', 0, NULL, '', 23143);
INSERT INTO `os_patent_affair` VALUES (30880, 0, '1', 0, NULL, '', 23144);
INSERT INTO `os_patent_affair` VALUES (30881, 0, '1', 0, NULL, '', 23145);
INSERT INTO `os_patent_affair` VALUES (30882, 0, '1', 0, NULL, '', 23146);
INSERT INTO `os_patent_affair` VALUES (30883, 0, '1', 0, NULL, '', 23147);
INSERT INTO `os_patent_affair` VALUES (30884, 0, '1', 0, NULL, '', 23148);
INSERT INTO `os_patent_affair` VALUES (30885, 0, '1', 0, NULL, '', 23149);
INSERT INTO `os_patent_affair` VALUES (30886, 0, '1', 0, NULL, '', 23150);
INSERT INTO `os_patent_affair` VALUES (30887, 0, '1', 0, NULL, '', 23151);
INSERT INTO `os_patent_affair` VALUES (30888, 0, '1', 0, NULL, '', 23152);
INSERT INTO `os_patent_affair` VALUES (30889, 0, '1', 0, NULL, '', 23153);
INSERT INTO `os_patent_affair` VALUES (30890, 0, '1', 0, NULL, '', 23154);
INSERT INTO `os_patent_affair` VALUES (30891, 0, '1', 0, NULL, '', 23155);
INSERT INTO `os_patent_affair` VALUES (30892, 0, '1', 0, NULL, '', 23156);
INSERT INTO `os_patent_affair` VALUES (30893, 0, '1', 0, NULL, '', 23157);
INSERT INTO `os_patent_affair` VALUES (30894, 0, '1', 0, NULL, '', 23158);
INSERT INTO `os_patent_affair` VALUES (30895, 0, '1', 0, NULL, '', 23159);
INSERT INTO `os_patent_affair` VALUES (30896, 0, '1', 0, NULL, '', 23160);
INSERT INTO `os_patent_affair` VALUES (30897, 0, '1', 0, NULL, '', 23161);
INSERT INTO `os_patent_affair` VALUES (30898, 0, '1', 0, NULL, '', 23162);
INSERT INTO `os_patent_affair` VALUES (30899, 0, '1', 0, NULL, '', 23163);
INSERT INTO `os_patent_affair` VALUES (30900, 0, '1', 0, NULL, '', 23164);
INSERT INTO `os_patent_affair` VALUES (30901, 0, '1', 0, NULL, '', 23165);
INSERT INTO `os_patent_affair` VALUES (30902, 0, '1', 0, NULL, '', 23166);
INSERT INTO `os_patent_affair` VALUES (30903, 0, '1', 0, NULL, '', 23167);
INSERT INTO `os_patent_affair` VALUES (30904, 0, '1', 0, NULL, '', 23168);
INSERT INTO `os_patent_affair` VALUES (30905, 0, '1', 0, NULL, '', 23169);
INSERT INTO `os_patent_affair` VALUES (30906, 0, '2', 0, NULL, '', 23169);
INSERT INTO `os_patent_affair` VALUES (30907, 0, '1', 0, NULL, '', 23170);
INSERT INTO `os_patent_affair` VALUES (30908, 0, '1', 0, NULL, '', 23171);
INSERT INTO `os_patent_affair` VALUES (30909, 0, '1', 0, NULL, '', 23172);
INSERT INTO `os_patent_affair` VALUES (30910, 0, '1', 0, NULL, '', 23173);
INSERT INTO `os_patent_affair` VALUES (30911, 0, '1', 0, NULL, '', 23174);
INSERT INTO `os_patent_affair` VALUES (30912, 0, '1', 0, NULL, '', 23175);
INSERT INTO `os_patent_affair` VALUES (30913, 0, '1', 0, NULL, '', 23176);
INSERT INTO `os_patent_affair` VALUES (30914, 0, '1', 0, NULL, '', 23177);
INSERT INTO `os_patent_affair` VALUES (30915, 0, '1', 0, NULL, '', 23178);
INSERT INTO `os_patent_affair` VALUES (30916, 0, '1', 0, NULL, '', 23179);
INSERT INTO `os_patent_affair` VALUES (30917, 0, '1', 0, NULL, '', 23180);
INSERT INTO `os_patent_affair` VALUES (30918, 0, '1', 0, NULL, '', 23181);
INSERT INTO `os_patent_affair` VALUES (30919, 0, '1', 0, NULL, '', 23182);
INSERT INTO `os_patent_affair` VALUES (30920, 0, '1', 0, NULL, '', 23183);
INSERT INTO `os_patent_affair` VALUES (30921, 0, '1', 0, NULL, '', 23184);
INSERT INTO `os_patent_affair` VALUES (30922, 0, '1', 0, NULL, '', 23185);
INSERT INTO `os_patent_affair` VALUES (30923, 0, '1', 0, NULL, '', 23186);
INSERT INTO `os_patent_affair` VALUES (30924, 0, '1', 0, NULL, '', 23187);
INSERT INTO `os_patent_affair` VALUES (30925, 0, '1', 0, NULL, '', 23188);
INSERT INTO `os_patent_affair` VALUES (30926, 0, '1', 0, NULL, '', 23189);
INSERT INTO `os_patent_affair` VALUES (30927, 0, '1', 0, NULL, '', 23190);
INSERT INTO `os_patent_affair` VALUES (30928, 0, '1', 0, NULL, '', 23191);
INSERT INTO `os_patent_affair` VALUES (30929, 0, '1', 0, NULL, '', 23192);
INSERT INTO `os_patent_affair` VALUES (30930, 0, '1', 0, NULL, '', 23193);
INSERT INTO `os_patent_affair` VALUES (30931, 0, '1', 0, NULL, '', 23194);
INSERT INTO `os_patent_affair` VALUES (30932, 0, '1', 0, NULL, '', 23195);
INSERT INTO `os_patent_affair` VALUES (30933, 0, '1', 0, NULL, '', 23196);
INSERT INTO `os_patent_affair` VALUES (30934, 0, '1', 0, NULL, '', 23197);
INSERT INTO `os_patent_affair` VALUES (30935, 0, '1', 0, NULL, '', 23198);
INSERT INTO `os_patent_affair` VALUES (30936, 0, '1', 0, NULL, '', 23199);
INSERT INTO `os_patent_affair` VALUES (30937, 0, '1', 0, NULL, '', 23200);
INSERT INTO `os_patent_affair` VALUES (30938, 0, '1', 0, NULL, '', 23201);
INSERT INTO `os_patent_affair` VALUES (30939, 0, '1', 0, NULL, '', 23202);
INSERT INTO `os_patent_affair` VALUES (30940, 0, '1', 0, NULL, '', 23203);
INSERT INTO `os_patent_affair` VALUES (30941, 0, '1', 0, NULL, '', 23204);
INSERT INTO `os_patent_affair` VALUES (30942, 0, '1', 0, NULL, '', 23205);
INSERT INTO `os_patent_affair` VALUES (30943, 0, '1', 0, NULL, '', 23206);
INSERT INTO `os_patent_affair` VALUES (30944, 0, '1', 0, NULL, '', 23207);
INSERT INTO `os_patent_affair` VALUES (30945, 0, '1', 0, NULL, '', 23208);
INSERT INTO `os_patent_affair` VALUES (30946, 0, '1', 0, NULL, '', 23209);
INSERT INTO `os_patent_affair` VALUES (30947, 0, '1', 0, NULL, '', 23210);
INSERT INTO `os_patent_affair` VALUES (30948, 0, '1', 0, NULL, '', 23211);
INSERT INTO `os_patent_affair` VALUES (30949, 0, '1', 0, NULL, '', 23212);
INSERT INTO `os_patent_affair` VALUES (30950, 0, '1', 0, NULL, '', 23213);
INSERT INTO `os_patent_affair` VALUES (30951, 0, '1', 0, NULL, '', 23214);
INSERT INTO `os_patent_affair` VALUES (30952, 0, '1', 0, NULL, '', 23215);
INSERT INTO `os_patent_affair` VALUES (30953, 0, '1', 0, NULL, '', 23216);
INSERT INTO `os_patent_affair` VALUES (30954, 0, '1', 0, NULL, '', 23217);
INSERT INTO `os_patent_affair` VALUES (30955, 0, '1', 0, NULL, '', 23218);
INSERT INTO `os_patent_affair` VALUES (30956, 0, '1', 0, NULL, '', 23219);
INSERT INTO `os_patent_affair` VALUES (30957, 0, '1', 0, NULL, '', 23220);
INSERT INTO `os_patent_affair` VALUES (30958, 0, '1', 0, NULL, '', 23221);
INSERT INTO `os_patent_affair` VALUES (30959, 0, '1', 0, NULL, '', 23222);
INSERT INTO `os_patent_affair` VALUES (30960, 0, '1', 0, NULL, '', 23223);
INSERT INTO `os_patent_affair` VALUES (30961, 0, '1', 0, NULL, '', 23224);
INSERT INTO `os_patent_affair` VALUES (30962, 0, '1', 0, NULL, '', 23225);
INSERT INTO `os_patent_affair` VALUES (30963, 0, '1', 0, NULL, '', 23226);
INSERT INTO `os_patent_affair` VALUES (30964, 0, '1', 0, NULL, '', 23227);
INSERT INTO `os_patent_affair` VALUES (30965, 0, '1', 0, NULL, '', 23228);
INSERT INTO `os_patent_affair` VALUES (30966, 0, '1', 0, NULL, '', 23229);
INSERT INTO `os_patent_affair` VALUES (30967, 0, '1', 0, NULL, '', 23230);
INSERT INTO `os_patent_affair` VALUES (30968, 0, '1', 0, NULL, '', 23231);
INSERT INTO `os_patent_affair` VALUES (30969, 0, '1', 0, NULL, '', 23232);
INSERT INTO `os_patent_affair` VALUES (30970, 0, '1', 0, NULL, '', 23233);
INSERT INTO `os_patent_affair` VALUES (30971, 0, '1', 0, NULL, '', 23234);
INSERT INTO `os_patent_affair` VALUES (30972, 0, '1', 0, NULL, '', 23235);
INSERT INTO `os_patent_affair` VALUES (30973, 0, '1', 0, NULL, '', 23236);
INSERT INTO `os_patent_affair` VALUES (30974, 0, '1', 0, NULL, '', 23237);
INSERT INTO `os_patent_affair` VALUES (30975, 0, '1', 0, NULL, '', 23238);
INSERT INTO `os_patent_affair` VALUES (30976, 0, '1', 0, NULL, '', 23239);
INSERT INTO `os_patent_affair` VALUES (30977, 0, '1', 0, NULL, '', 23240);
INSERT INTO `os_patent_affair` VALUES (30978, 0, '1', 0, NULL, '', 23241);
INSERT INTO `os_patent_affair` VALUES (30979, 0, '1', 0, NULL, '', 23242);
INSERT INTO `os_patent_affair` VALUES (30980, 0, '1', 0, NULL, '', 23243);
INSERT INTO `os_patent_affair` VALUES (30981, 0, '1', 0, NULL, '', 23244);
INSERT INTO `os_patent_affair` VALUES (30982, 0, '1', 0, NULL, '', 23245);
INSERT INTO `os_patent_affair` VALUES (30983, 0, '1', 0, NULL, '', 23246);
INSERT INTO `os_patent_affair` VALUES (30984, 0, '1', 0, NULL, '', 23247);
INSERT INTO `os_patent_affair` VALUES (30985, 0, '2', 0, NULL, '', 23247);
INSERT INTO `os_patent_affair` VALUES (30986, 0, '1', 0, NULL, '', 23248);
INSERT INTO `os_patent_affair` VALUES (30987, 0, '2', 0, NULL, '', 23248);
INSERT INTO `os_patent_affair` VALUES (30988, 0, '1', 0, NULL, '', 23249);
INSERT INTO `os_patent_affair` VALUES (30989, 0, '2', 0, NULL, '', 23249);
INSERT INTO `os_patent_affair` VALUES (30990, 0, '1', 0, NULL, '', 23250);
INSERT INTO `os_patent_affair` VALUES (30991, 0, '2', 0, NULL, '', 23250);
INSERT INTO `os_patent_affair` VALUES (30992, 0, '1', 0, NULL, '', 23251);
INSERT INTO `os_patent_affair` VALUES (30993, 0, '2', 0, NULL, '', 23251);
INSERT INTO `os_patent_affair` VALUES (30994, 0, '1', 0, NULL, '', 23252);
INSERT INTO `os_patent_affair` VALUES (30995, 0, '1', 0, NULL, '', 23253);
INSERT INTO `os_patent_affair` VALUES (30996, 0, '2', 0, NULL, '', 23253);
INSERT INTO `os_patent_affair` VALUES (30997, 0, '1', 0, NULL, '', 23254);
INSERT INTO `os_patent_affair` VALUES (30998, 0, '1', 0, NULL, '', 23255);
INSERT INTO `os_patent_affair` VALUES (30999, 0, '2', 0, NULL, '', 23255);
INSERT INTO `os_patent_affair` VALUES (31000, 0, '1', 0, NULL, '', 23256);
INSERT INTO `os_patent_affair` VALUES (31001, 0, '1', 0, NULL, '', 23257);
INSERT INTO `os_patent_affair` VALUES (31002, 0, '2', 0, NULL, '', 23257);
INSERT INTO `os_patent_affair` VALUES (31003, 0, '1', 0, NULL, '', 23258);
INSERT INTO `os_patent_affair` VALUES (31004, 0, '2', 0, NULL, '', 23258);
INSERT INTO `os_patent_affair` VALUES (31005, 0, '1', 0, NULL, '', 23259);
INSERT INTO `os_patent_affair` VALUES (31006, 0, '2', 0, NULL, '', 23259);
INSERT INTO `os_patent_affair` VALUES (31007, 0, '1', 0, NULL, '', 23260);
INSERT INTO `os_patent_affair` VALUES (31008, 0, '2', 0, NULL, '', 23260);
INSERT INTO `os_patent_affair` VALUES (31009, 0, '1', 0, NULL, '', 23261);
INSERT INTO `os_patent_affair` VALUES (31010, 0, '2', 0, NULL, '', 23261);
INSERT INTO `os_patent_affair` VALUES (31011, 0, '1', 0, NULL, '', 23262);
INSERT INTO `os_patent_affair` VALUES (31012, 0, '1', 0, NULL, '', 23263);
INSERT INTO `os_patent_affair` VALUES (31013, 0, '1', 0, NULL, '', 23264);
INSERT INTO `os_patent_affair` VALUES (31014, 0, '1', 0, NULL, '', 23265);
INSERT INTO `os_patent_affair` VALUES (31015, 0, '1', 0, NULL, '', 23266);
INSERT INTO `os_patent_affair` VALUES (31016, 0, '1', 0, NULL, '', 23267);
INSERT INTO `os_patent_affair` VALUES (31017, 0, '1', 0, NULL, '', 23268);
INSERT INTO `os_patent_affair` VALUES (31018, 0, '1', 0, NULL, '', 23269);
INSERT INTO `os_patent_affair` VALUES (31019, 0, '1', 0, NULL, '', 23270);
INSERT INTO `os_patent_affair` VALUES (31020, 0, '1', 0, NULL, '', 23271);
INSERT INTO `os_patent_affair` VALUES (31021, 0, '1', 0, NULL, '', 23272);
INSERT INTO `os_patent_affair` VALUES (31022, 0, '2', 0, NULL, '', 23272);
INSERT INTO `os_patent_affair` VALUES (31023, 0, '1', 0, NULL, '', 23273);
INSERT INTO `os_patent_affair` VALUES (31024, 0, '1', 0, NULL, '', 23274);
INSERT INTO `os_patent_affair` VALUES (31025, 0, '2', 0, NULL, '', 23274);
INSERT INTO `os_patent_affair` VALUES (31026, 0, '1', 0, NULL, '', 23275);
INSERT INTO `os_patent_affair` VALUES (31027, 0, '1', 0, NULL, '', 23276);
INSERT INTO `os_patent_affair` VALUES (31028, 0, '2', 0, NULL, '', 23276);
INSERT INTO `os_patent_affair` VALUES (31029, 0, '1', 0, NULL, '', 23277);
INSERT INTO `os_patent_affair` VALUES (31030, 0, '1', 0, NULL, '', 23278);
INSERT INTO `os_patent_affair` VALUES (31031, 0, '1', 0, NULL, '', 23279);
INSERT INTO `os_patent_affair` VALUES (31032, 0, '1', 0, NULL, '', 23280);
INSERT INTO `os_patent_affair` VALUES (31033, 0, '1', 0, NULL, '', 23281);
INSERT INTO `os_patent_affair` VALUES (31034, 0, '1', 0, NULL, '', 23282);
INSERT INTO `os_patent_affair` VALUES (31035, 0, '1', 0, NULL, '', 23283);
INSERT INTO `os_patent_affair` VALUES (31036, 0, '1', 0, NULL, '', 23284);
INSERT INTO `os_patent_affair` VALUES (31037, 0, '1', 0, NULL, '', 23285);
INSERT INTO `os_patent_affair` VALUES (31038, 0, '2', 0, NULL, '', 23285);
INSERT INTO `os_patent_affair` VALUES (31039, 0, '1', 0, NULL, '', 23286);
INSERT INTO `os_patent_affair` VALUES (31040, 0, '1', 0, NULL, '', 23287);
INSERT INTO `os_patent_affair` VALUES (31041, 0, '2', 0, NULL, '', 23287);
INSERT INTO `os_patent_affair` VALUES (31042, 0, '1', 0, NULL, '', 23288);
INSERT INTO `os_patent_affair` VALUES (31043, 0, '1', 0, NULL, '', 23289);
INSERT INTO `os_patent_affair` VALUES (31044, 0, '1', 0, NULL, '', 23290);
INSERT INTO `os_patent_affair` VALUES (31045, 0, '1', 0, NULL, '', 23291);
INSERT INTO `os_patent_affair` VALUES (31046, 0, '1', 0, NULL, '', 23292);
INSERT INTO `os_patent_affair` VALUES (31047, 0, '1', 0, NULL, '', 23293);
INSERT INTO `os_patent_affair` VALUES (31048, 0, '1', 0, NULL, '', 23294);
INSERT INTO `os_patent_affair` VALUES (31049, 0, '1', 0, NULL, '', 23295);
INSERT INTO `os_patent_affair` VALUES (31050, 0, '1', 0, NULL, '', 23296);
INSERT INTO `os_patent_affair` VALUES (31051, 0, '1', 0, NULL, '', 23297);
INSERT INTO `os_patent_affair` VALUES (31052, 0, '2', 0, NULL, '', 23297);
INSERT INTO `os_patent_affair` VALUES (31053, 0, '1', 0, NULL, '', 23298);
INSERT INTO `os_patent_affair` VALUES (31054, 0, '1', 0, NULL, '', 23299);
INSERT INTO `os_patent_affair` VALUES (31055, 0, '2', 0, NULL, '', 23299);
INSERT INTO `os_patent_affair` VALUES (31056, 0, '1', 0, NULL, '', 23300);
INSERT INTO `os_patent_affair` VALUES (31057, 0, '2', 0, NULL, '', 23300);
INSERT INTO `os_patent_affair` VALUES (31058, 0, '1', 0, NULL, '', 23301);
INSERT INTO `os_patent_affair` VALUES (31059, 0, '1', 0, NULL, '', 23302);
INSERT INTO `os_patent_affair` VALUES (31060, 0, '1', 0, NULL, '', 23303);
INSERT INTO `os_patent_affair` VALUES (31061, 0, '1', 0, NULL, '', 23304);
INSERT INTO `os_patent_affair` VALUES (31062, 0, '1', 0, NULL, '', 23305);
INSERT INTO `os_patent_affair` VALUES (31063, 0, '1', 0, NULL, '', 23306);
INSERT INTO `os_patent_affair` VALUES (31064, 0, '1', 0, NULL, '', 23307);
INSERT INTO `os_patent_affair` VALUES (31065, 0, '1', 0, NULL, '', 23308);
INSERT INTO `os_patent_affair` VALUES (31066, 0, '1', 0, NULL, '', 23310);
INSERT INTO `os_patent_affair` VALUES (31067, 0, '1', 0, NULL, '', 23311);
INSERT INTO `os_patent_affair` VALUES (31068, 0, '1', 0, NULL, '', 23312);
INSERT INTO `os_patent_affair` VALUES (31069, 0, '1', 0, NULL, '', 23313);
INSERT INTO `os_patent_affair` VALUES (31070, 0, '1', 0, NULL, '', 23314);
INSERT INTO `os_patent_affair` VALUES (31071, 0, '1', 0, NULL, '', 23316);
INSERT INTO `os_patent_affair` VALUES (31072, 0, '1', 0, NULL, '', 23317);
INSERT INTO `os_patent_affair` VALUES (31073, 0, '1', 0, NULL, '', 23318);
INSERT INTO `os_patent_affair` VALUES (31074, 0, '1', 0, NULL, '', 23319);
INSERT INTO `os_patent_affair` VALUES (31075, 0, '1', 0, NULL, '', 23320);
INSERT INTO `os_patent_affair` VALUES (31076, 0, '2', 0, NULL, '', 23320);
INSERT INTO `os_patent_affair` VALUES (31077, 0, '1', 0, NULL, '', 23321);
INSERT INTO `os_patent_affair` VALUES (31078, 0, '1', 0, NULL, '', 23321);
INSERT INTO `os_patent_affair` VALUES (31079, 0, '1', 0, NULL, '', 23322);
INSERT INTO `os_patent_affair` VALUES (31080, 0, '2', 0, NULL, '', 23322);
INSERT INTO `os_patent_affair` VALUES (31081, 0, '1', 0, NULL, '', 23323);
INSERT INTO `os_patent_affair` VALUES (31082, 0, '2', 0, NULL, '', 23323);
INSERT INTO `os_patent_affair` VALUES (31083, 0, '1', 0, NULL, '', 23324);
INSERT INTO `os_patent_affair` VALUES (31084, 0, '2', 0, NULL, '', 23324);
INSERT INTO `os_patent_affair` VALUES (31085, 0, '1', 0, NULL, '', 23325);
INSERT INTO `os_patent_affair` VALUES (31086, 0, '1', 0, NULL, '', 23326);
INSERT INTO `os_patent_affair` VALUES (31087, 0, '1', 0, NULL, '', 23327);
INSERT INTO `os_patent_affair` VALUES (31088, 0, '1', 0, NULL, '', 23328);
INSERT INTO `os_patent_affair` VALUES (31089, 0, '1', 0, NULL, '', 23329);
INSERT INTO `os_patent_affair` VALUES (31090, 0, '2', 0, NULL, '', 23329);
INSERT INTO `os_patent_affair` VALUES (31091, 0, '1', 0, NULL, '', 23330);
INSERT INTO `os_patent_affair` VALUES (31092, 0, '2', 0, NULL, '', 23330);
INSERT INTO `os_patent_affair` VALUES (31093, 0, '1', 0, NULL, '', 23331);
INSERT INTO `os_patent_affair` VALUES (31094, 0, '1', 0, NULL, '', 23332);
INSERT INTO `os_patent_affair` VALUES (31095, 0, '1', 0, NULL, '', 23333);
INSERT INTO `os_patent_affair` VALUES (31096, 0, '2', 0, NULL, '', 23333);
INSERT INTO `os_patent_affair` VALUES (31097, 0, '1', 0, NULL, '', 23334);
INSERT INTO `os_patent_affair` VALUES (31098, 0, '1', 0, NULL, '', 23335);
INSERT INTO `os_patent_affair` VALUES (31099, 0, '1', 0, NULL, '', 23336);
INSERT INTO `os_patent_affair` VALUES (31100, 0, '1', 0, NULL, '', 23338);
INSERT INTO `os_patent_affair` VALUES (31101, 0, '1', 0, NULL, '', 23339);
INSERT INTO `os_patent_affair` VALUES (31102, 0, '1', 0, NULL, '', 23340);
INSERT INTO `os_patent_affair` VALUES (31103, 0, '1', 0, NULL, '', 23341);
INSERT INTO `os_patent_affair` VALUES (31104, 0, '1', 0, NULL, '', 23342);
INSERT INTO `os_patent_affair` VALUES (31105, 0, '1', 0, NULL, '', 23343);
INSERT INTO `os_patent_affair` VALUES (31106, 0, '1', 0, NULL, '', 23345);
INSERT INTO `os_patent_affair` VALUES (31107, 0, '1', 0, NULL, '', 23346);
INSERT INTO `os_patent_affair` VALUES (31108, 0, '1', 0, NULL, '', 23347);
INSERT INTO `os_patent_affair` VALUES (31109, 0, '1', 0, NULL, '', 23348);
INSERT INTO `os_patent_affair` VALUES (31110, 0, '1', 0, NULL, '', 23349);
INSERT INTO `os_patent_affair` VALUES (31111, 0, '1', 0, NULL, '', 23350);
INSERT INTO `os_patent_affair` VALUES (31112, 0, '1', 0, NULL, '', 23351);
INSERT INTO `os_patent_affair` VALUES (31113, 0, '1', 0, NULL, '', 23352);
INSERT INTO `os_patent_affair` VALUES (31114, 0, '1', 0, NULL, '', 23353);
INSERT INTO `os_patent_affair` VALUES (31115, 0, '1', 0, NULL, '', 23354);
INSERT INTO `os_patent_affair` VALUES (31116, 0, '1', 0, NULL, '', 23355);
INSERT INTO `os_patent_affair` VALUES (31117, 0, '1', 0, NULL, '', 23356);
INSERT INTO `os_patent_affair` VALUES (31118, 0, '1', 0, NULL, '', 23357);
INSERT INTO `os_patent_affair` VALUES (31119, 0, '1', 0, NULL, '', 23358);
INSERT INTO `os_patent_affair` VALUES (31120, 0, '1', 0, NULL, '', 23359);
INSERT INTO `os_patent_affair` VALUES (31121, 0, '1', 0, NULL, '', 23360);
INSERT INTO `os_patent_affair` VALUES (31122, 0, '1', 0, NULL, '', 23361);
INSERT INTO `os_patent_affair` VALUES (31123, 0, '1', 0, NULL, '', 23362);
INSERT INTO `os_patent_affair` VALUES (31124, 0, '1', 0, NULL, '', 23363);
INSERT INTO `os_patent_affair` VALUES (31125, 0, '1', 0, NULL, '', 23364);
INSERT INTO `os_patent_affair` VALUES (31126, 0, '1', 0, NULL, '', 23365);
INSERT INTO `os_patent_affair` VALUES (31127, 0, '1', 0, NULL, '', 23366);
INSERT INTO `os_patent_affair` VALUES (31128, 0, '1', 0, NULL, '', 23367);
INSERT INTO `os_patent_affair` VALUES (31129, 0, '1', 0, NULL, '', 23368);
INSERT INTO `os_patent_affair` VALUES (31130, 0, '1', 0, NULL, '', 23369);
INSERT INTO `os_patent_affair` VALUES (31131, 0, '1', 0, NULL, '', 23370);
INSERT INTO `os_patent_affair` VALUES (31132, 0, '2', 0, NULL, '', 23370);
INSERT INTO `os_patent_affair` VALUES (31133, 0, '1', 0, NULL, '', 23371);
INSERT INTO `os_patent_affair` VALUES (31134, 0, '1', 0, NULL, '', 23372);
INSERT INTO `os_patent_affair` VALUES (31135, 0, '1', 0, NULL, '', 23373);
INSERT INTO `os_patent_affair` VALUES (31136, 0, '1', 0, NULL, '', 23374);
INSERT INTO `os_patent_affair` VALUES (31137, 0, '1', 0, NULL, '', 23375);
INSERT INTO `os_patent_affair` VALUES (31138, 0, '1', 0, NULL, '', 23376);
INSERT INTO `os_patent_affair` VALUES (31139, 0, '1', 0, NULL, '', 23377);
INSERT INTO `os_patent_affair` VALUES (31140, 0, '1', 0, NULL, '', 23378);
INSERT INTO `os_patent_affair` VALUES (31141, 0, '1', 0, NULL, '', 23379);
INSERT INTO `os_patent_affair` VALUES (31142, 0, '1', 0, NULL, '', 23380);
INSERT INTO `os_patent_affair` VALUES (31143, 0, '1', 0, NULL, '', 23381);
INSERT INTO `os_patent_affair` VALUES (31144, 0, '1', 0, NULL, '', 23382);
INSERT INTO `os_patent_affair` VALUES (31145, 0, '1', 0, NULL, '', 23384);
INSERT INTO `os_patent_affair` VALUES (31146, 0, '1', 0, NULL, '', 23385);
INSERT INTO `os_patent_affair` VALUES (31147, 0, '1', 0, NULL, '', 23386);
INSERT INTO `os_patent_affair` VALUES (31148, 0, '1', 0, NULL, '', 23387);
INSERT INTO `os_patent_affair` VALUES (31149, 0, '1', 0, NULL, '', 23388);
INSERT INTO `os_patent_affair` VALUES (31150, 0, '1', 0, NULL, '', 23389);
INSERT INTO `os_patent_affair` VALUES (31151, 0, '1', 0, NULL, '', 23390);
INSERT INTO `os_patent_affair` VALUES (31152, 0, '1', 0, NULL, '', 23391);
INSERT INTO `os_patent_affair` VALUES (31153, 0, '1', 0, NULL, '', 23392);
INSERT INTO `os_patent_affair` VALUES (31154, 0, '1', 0, NULL, '', 23393);
INSERT INTO `os_patent_affair` VALUES (31155, 0, '1', 0, NULL, '', 23394);
INSERT INTO `os_patent_affair` VALUES (31156, 0, '1', 0, NULL, '', 23395);
INSERT INTO `os_patent_affair` VALUES (31157, 0, '1', 0, NULL, '', 23396);
INSERT INTO `os_patent_affair` VALUES (31158, 0, '1', 0, NULL, '', 23397);
INSERT INTO `os_patent_affair` VALUES (31159, 0, '1', 0, NULL, '', 23398);
INSERT INTO `os_patent_affair` VALUES (31160, 0, '1', 0, NULL, '', 23399);
INSERT INTO `os_patent_affair` VALUES (31161, 0, '1', 0, NULL, '', 23400);
INSERT INTO `os_patent_affair` VALUES (31162, 0, '1', 0, NULL, '', 23401);
INSERT INTO `os_patent_affair` VALUES (31163, 0, '1', 0, NULL, '', 23402);
INSERT INTO `os_patent_affair` VALUES (31164, 0, '1', 0, NULL, '', 23403);
INSERT INTO `os_patent_affair` VALUES (31165, 0, '1', 0, NULL, '', 23404);
INSERT INTO `os_patent_affair` VALUES (31166, 0, '1', 0, NULL, '', 23405);
INSERT INTO `os_patent_affair` VALUES (31167, 0, '1', 0, NULL, '', 23406);
INSERT INTO `os_patent_affair` VALUES (31168, 0, '1', 0, NULL, '', 23407);
INSERT INTO `os_patent_affair` VALUES (31169, 0, '1', 0, NULL, '', 23408);
INSERT INTO `os_patent_affair` VALUES (31170, 0, '1', 0, NULL, '', 23409);
INSERT INTO `os_patent_affair` VALUES (31171, 0, '1', 0, NULL, '', 23410);
INSERT INTO `os_patent_affair` VALUES (31172, 0, '1', 0, NULL, '', 23411);
INSERT INTO `os_patent_affair` VALUES (31173, 0, '1', 0, NULL, '', 23412);
INSERT INTO `os_patent_affair` VALUES (31174, 0, '1', 0, NULL, '', 23413);
INSERT INTO `os_patent_affair` VALUES (31175, 0, '1', 0, NULL, '', 23414);
INSERT INTO `os_patent_affair` VALUES (31176, 0, '1', 0, NULL, '', 23415);
INSERT INTO `os_patent_affair` VALUES (31177, 0, '1', 0, NULL, '', 23416);
INSERT INTO `os_patent_affair` VALUES (31178, 0, '1', 0, NULL, '', 23417);
INSERT INTO `os_patent_affair` VALUES (31179, 0, '1', 0, NULL, '', 23418);
INSERT INTO `os_patent_affair` VALUES (31180, 0, '2', 0, NULL, '', 23418);
INSERT INTO `os_patent_affair` VALUES (31181, 0, '1', 0, NULL, '', 23419);
INSERT INTO `os_patent_affair` VALUES (31182, 0, '1', 0, NULL, '', 23420);
INSERT INTO `os_patent_affair` VALUES (31183, 0, '1', 0, NULL, '', 23421);
INSERT INTO `os_patent_affair` VALUES (31184, 0, '1', 0, NULL, '', 23422);
INSERT INTO `os_patent_affair` VALUES (31185, 0, '1', 0, NULL, '', 23423);
INSERT INTO `os_patent_affair` VALUES (31186, 0, '2', 0, NULL, '', 23423);
INSERT INTO `os_patent_affair` VALUES (31187, 0, '1', 0, NULL, '', 23425);
INSERT INTO `os_patent_affair` VALUES (31188, 0, '1', 0, NULL, '', 23426);
INSERT INTO `os_patent_affair` VALUES (31189, 0, '1', 0, NULL, '', 23427);
INSERT INTO `os_patent_affair` VALUES (31190, 0, '2', 0, NULL, '', 23428);
INSERT INTO `os_patent_affair` VALUES (31191, 0, '1', 0, NULL, '', 23429);
INSERT INTO `os_patent_affair` VALUES (31192, 0, '1', 0, NULL, '', 23430);
INSERT INTO `os_patent_affair` VALUES (31193, 0, '1', 0, NULL, '', 23431);
INSERT INTO `os_patent_affair` VALUES (31194, 0, '1', 0, NULL, '', 23432);
INSERT INTO `os_patent_affair` VALUES (31195, 0, '1', 0, NULL, '', 23433);
INSERT INTO `os_patent_affair` VALUES (31196, 0, '1', 0, NULL, '', 23434);
INSERT INTO `os_patent_affair` VALUES (31197, 0, '1', 0, NULL, '', 23435);
INSERT INTO `os_patent_affair` VALUES (31198, 0, '1', 0, NULL, '', 23436);
INSERT INTO `os_patent_affair` VALUES (31199, 0, '1', 0, NULL, '', 23437);
INSERT INTO `os_patent_affair` VALUES (31200, 0, '1', 0, NULL, '', 23438);
INSERT INTO `os_patent_affair` VALUES (31201, 0, '1', 0, NULL, '', 23439);
INSERT INTO `os_patent_affair` VALUES (31202, 0, '1', 0, NULL, '', 23440);
INSERT INTO `os_patent_affair` VALUES (31203, 0, '1', 0, NULL, '', 23441);
INSERT INTO `os_patent_affair` VALUES (31204, 0, '1', 0, NULL, '', 23442);
INSERT INTO `os_patent_affair` VALUES (31205, 0, '1', 0, NULL, '', 23443);
INSERT INTO `os_patent_affair` VALUES (31206, 0, '1', 0, NULL, '', 23444);
INSERT INTO `os_patent_affair` VALUES (31207, 0, '1', 0, NULL, '', 23445);
INSERT INTO `os_patent_affair` VALUES (31208, 0, '1', 0, NULL, '', 23446);
INSERT INTO `os_patent_affair` VALUES (31209, 0, '1', 0, NULL, '', 23447);
INSERT INTO `os_patent_affair` VALUES (31210, 0, '2', 0, NULL, '', 23448);
INSERT INTO `os_patent_affair` VALUES (31211, 0, '1', 0, NULL, '', 23449);
INSERT INTO `os_patent_affair` VALUES (31212, 0, '1', 0, NULL, '', 23450);
INSERT INTO `os_patent_affair` VALUES (31213, 0, '1', 0, NULL, '', 23451);
INSERT INTO `os_patent_affair` VALUES (31214, 0, '1', 0, NULL, '', 23452);
INSERT INTO `os_patent_affair` VALUES (31215, 0, '2', 0, NULL, '', 23452);
INSERT INTO `os_patent_affair` VALUES (31216, 0, '1', 0, NULL, '', 23453);
INSERT INTO `os_patent_affair` VALUES (31217, 0, '1', 0, NULL, '', 23454);
INSERT INTO `os_patent_affair` VALUES (31218, 0, '1', 0, NULL, '', 23455);
INSERT INTO `os_patent_affair` VALUES (31219, 0, '1', 0, NULL, '', 23456);
INSERT INTO `os_patent_affair` VALUES (31220, 0, '2', 0, NULL, '', 23456);
INSERT INTO `os_patent_affair` VALUES (31221, 0, '2', 0, NULL, '', 23457);
INSERT INTO `os_patent_affair` VALUES (31222, 0, '1', 0, NULL, '', 23458);
INSERT INTO `os_patent_affair` VALUES (31223, 0, '1', 0, NULL, '', 23459);
INSERT INTO `os_patent_affair` VALUES (31224, 0, '1', 0, NULL, '', 23460);
INSERT INTO `os_patent_affair` VALUES (31225, 0, '1', 0, NULL, '', 23461);
INSERT INTO `os_patent_affair` VALUES (31226, 0, '1', 0, NULL, '', 23462);
INSERT INTO `os_patent_affair` VALUES (31227, 0, '1', 0, NULL, '', 23463);
INSERT INTO `os_patent_affair` VALUES (31228, 0, '1', 0, NULL, '', 23464);
INSERT INTO `os_patent_affair` VALUES (31229, 0, '1', 0, NULL, '', 23465);
INSERT INTO `os_patent_affair` VALUES (31230, 0, '1', 0, NULL, '', 23466);
INSERT INTO `os_patent_affair` VALUES (31231, 0, '1', 0, NULL, '', 23467);
INSERT INTO `os_patent_affair` VALUES (31232, 0, '1', 0, NULL, '', 23468);
INSERT INTO `os_patent_affair` VALUES (31233, 0, '1', 0, NULL, '', 23469);
INSERT INTO `os_patent_affair` VALUES (31234, 0, '1', 0, NULL, '', 23470);
INSERT INTO `os_patent_affair` VALUES (31235, 0, '1', 0, NULL, '', 23472);
INSERT INTO `os_patent_affair` VALUES (31236, 0, '1', 0, NULL, '', 23473);
INSERT INTO `os_patent_affair` VALUES (31237, 0, '1', 0, NULL, '', 23474);
INSERT INTO `os_patent_affair` VALUES (31238, 0, '1', 0, NULL, '', 23475);
INSERT INTO `os_patent_affair` VALUES (31239, 0, '2', 0, NULL, '', 23476);
INSERT INTO `os_patent_affair` VALUES (31240, 0, '1', 0, NULL, '', 23477);
INSERT INTO `os_patent_affair` VALUES (31241, 0, '1', 0, NULL, '', 23478);
INSERT INTO `os_patent_affair` VALUES (31242, 0, '1', 0, NULL, '', 23479);
INSERT INTO `os_patent_affair` VALUES (31243, 0, '1', 0, NULL, '', 23480);
INSERT INTO `os_patent_affair` VALUES (31244, 0, '1', 0, NULL, '', 23481);
INSERT INTO `os_patent_affair` VALUES (31245, 0, '1', 0, NULL, '', 23482);
INSERT INTO `os_patent_affair` VALUES (31246, 0, '1', 0, NULL, '', 23483);
INSERT INTO `os_patent_affair` VALUES (31247, 0, '1', 0, NULL, '', 23484);
INSERT INTO `os_patent_affair` VALUES (31248, 0, '1', 0, NULL, '', 23486);
INSERT INTO `os_patent_affair` VALUES (31249, 0, '1', 0, NULL, '', 23487);
INSERT INTO `os_patent_affair` VALUES (31250, 0, '1', 0, NULL, '', 23488);
INSERT INTO `os_patent_affair` VALUES (31251, 0, '1', 0, NULL, '', 23489);
INSERT INTO `os_patent_affair` VALUES (31252, 0, '1', 0, NULL, '', 23490);
INSERT INTO `os_patent_affair` VALUES (31253, 0, '1', 0, NULL, '', 23491);
INSERT INTO `os_patent_affair` VALUES (31254, 0, '1', 0, NULL, '', 23492);
INSERT INTO `os_patent_affair` VALUES (31255, 0, '1', 0, NULL, '', 23493);
INSERT INTO `os_patent_affair` VALUES (31256, 0, '1', 0, NULL, '', 23494);
INSERT INTO `os_patent_affair` VALUES (31257, 0, '1', 0, NULL, '', 23495);
INSERT INTO `os_patent_affair` VALUES (31258, 0, '1', 0, NULL, '', 23496);
INSERT INTO `os_patent_affair` VALUES (31259, 0, '1', 0, NULL, '', 23497);
INSERT INTO `os_patent_affair` VALUES (31260, 0, '1', 0, NULL, '', 23498);
INSERT INTO `os_patent_affair` VALUES (31261, 0, '1', 0, NULL, '', 23500);
INSERT INTO `os_patent_affair` VALUES (31262, 0, '1', 0, NULL, '', 23501);
INSERT INTO `os_patent_affair` VALUES (31263, 0, '1', 0, NULL, '', 23502);
INSERT INTO `os_patent_affair` VALUES (31264, 0, '1', 0, NULL, '', 23503);
INSERT INTO `os_patent_affair` VALUES (31265, 0, '1', 0, NULL, '', 23504);
INSERT INTO `os_patent_affair` VALUES (31266, 0, '1', 0, NULL, '', 23505);
INSERT INTO `os_patent_affair` VALUES (31267, 0, '2', 0, NULL, '', 23505);
INSERT INTO `os_patent_affair` VALUES (31268, 0, '1', 0, NULL, '', 23506);
INSERT INTO `os_patent_affair` VALUES (31269, 0, '1', 0, NULL, '', 23507);
INSERT INTO `os_patent_affair` VALUES (31270, 0, '1', 0, NULL, '', 23508);
INSERT INTO `os_patent_affair` VALUES (31271, 0, '1', 0, NULL, '', 23509);
INSERT INTO `os_patent_affair` VALUES (31272, 0, '1', 0, NULL, '', 23510);
INSERT INTO `os_patent_affair` VALUES (31273, 0, '2', 0, NULL, '', 23511);
INSERT INTO `os_patent_affair` VALUES (31274, 0, '1', 0, NULL, '', 23512);
INSERT INTO `os_patent_affair` VALUES (31275, 0, '1', 0, NULL, '', 23513);
INSERT INTO `os_patent_affair` VALUES (31276, 0, '1', 0, NULL, '', 23514);
INSERT INTO `os_patent_affair` VALUES (31277, 0, '1', 0, NULL, '', 23515);
INSERT INTO `os_patent_affair` VALUES (31278, 0, '1', 0, NULL, '', 23516);
INSERT INTO `os_patent_affair` VALUES (31279, 0, '2', 0, NULL, '', 23517);
INSERT INTO `os_patent_affair` VALUES (31280, 0, '1', 0, NULL, '', 23518);
INSERT INTO `os_patent_affair` VALUES (31281, 0, '1', 0, NULL, '', 23519);
INSERT INTO `os_patent_affair` VALUES (31282, 0, '1', 0, NULL, '', 23520);
INSERT INTO `os_patent_affair` VALUES (31283, 0, '1', 0, NULL, '', 23521);
INSERT INTO `os_patent_affair` VALUES (31284, 0, '1', 0, NULL, '', 23522);
INSERT INTO `os_patent_affair` VALUES (31285, 0, '1', 0, NULL, '', 23523);
INSERT INTO `os_patent_affair` VALUES (31286, 0, '1', 0, NULL, '', 23524);
INSERT INTO `os_patent_affair` VALUES (31287, 0, '1', 0, NULL, '', 23525);
INSERT INTO `os_patent_affair` VALUES (31288, 0, '1', 0, NULL, '', 23526);
INSERT INTO `os_patent_affair` VALUES (31289, 0, '1', 0, NULL, '', 23527);
INSERT INTO `os_patent_affair` VALUES (31290, 0, '1', 0, NULL, '', 23528);
INSERT INTO `os_patent_affair` VALUES (31291, 0, '1', 0, NULL, '', 23529);
INSERT INTO `os_patent_affair` VALUES (31292, 0, '1', 0, NULL, '', 23530);
INSERT INTO `os_patent_affair` VALUES (31293, 0, '1', 0, NULL, '', 23531);
INSERT INTO `os_patent_affair` VALUES (31294, 0, '1', 0, NULL, '', 23532);
INSERT INTO `os_patent_affair` VALUES (31295, 0, '1', 0, NULL, '', 23533);
INSERT INTO `os_patent_affair` VALUES (31296, 0, '1', 0, NULL, '', 23534);
INSERT INTO `os_patent_affair` VALUES (31297, 0, '1', 0, NULL, '', 23535);
INSERT INTO `os_patent_affair` VALUES (31298, 0, '1', 0, NULL, '', 23536);
INSERT INTO `os_patent_affair` VALUES (31299, 0, '1', 0, NULL, '', 23537);
INSERT INTO `os_patent_affair` VALUES (31300, 0, '1', 0, NULL, '', 23538);
INSERT INTO `os_patent_affair` VALUES (31301, 0, '1', 0, NULL, '', 23539);
INSERT INTO `os_patent_affair` VALUES (31302, 0, '2', 0, NULL, '', 23540);
INSERT INTO `os_patent_affair` VALUES (31303, 0, '2', 0, NULL, '', 23541);
INSERT INTO `os_patent_affair` VALUES (31304, 0, '1', 0, NULL, '', 23542);
INSERT INTO `os_patent_affair` VALUES (31305, 0, '1', 0, NULL, '', 23543);
INSERT INTO `os_patent_affair` VALUES (31306, 0, '1', 0, NULL, '', 23544);
INSERT INTO `os_patent_affair` VALUES (31307, 0, '2', 0, NULL, '', 23545);
INSERT INTO `os_patent_affair` VALUES (31308, 0, '2', 0, NULL, '', 23546);
INSERT INTO `os_patent_affair` VALUES (31309, 0, '1', 0, NULL, '', 23547);
INSERT INTO `os_patent_affair` VALUES (31310, 0, '1', 0, NULL, '', 23548);
INSERT INTO `os_patent_affair` VALUES (31311, 0, '1', 0, NULL, '', 23549);
INSERT INTO `os_patent_affair` VALUES (31312, 0, '2', 0, NULL, '', 23550);
INSERT INTO `os_patent_affair` VALUES (31313, 0, '1', 0, NULL, '', 23551);
INSERT INTO `os_patent_affair` VALUES (31314, 0, '2', 0, NULL, '', 23552);
INSERT INTO `os_patent_affair` VALUES (31315, 0, '1', 0, NULL, '', 23553);
INSERT INTO `os_patent_affair` VALUES (31316, 0, '2', 0, NULL, '', 23554);
INSERT INTO `os_patent_affair` VALUES (31317, 0, '1', 0, NULL, '', 23555);
INSERT INTO `os_patent_affair` VALUES (31318, 0, '2', 0, NULL, '', 23556);
INSERT INTO `os_patent_affair` VALUES (31319, 0, '2', 0, NULL, '', 23557);
INSERT INTO `os_patent_affair` VALUES (31320, 0, '2', 0, NULL, '', 23558);
INSERT INTO `os_patent_affair` VALUES (31321, 0, '1', 0, NULL, '', 23559);
INSERT INTO `os_patent_affair` VALUES (31322, 0, '1', 0, NULL, '', 23560);
INSERT INTO `os_patent_affair` VALUES (31323, 0, '2', 0, NULL, '', 23561);
INSERT INTO `os_patent_affair` VALUES (31324, 0, '2', 0, NULL, '', 23562);
INSERT INTO `os_patent_affair` VALUES (31325, 0, '2', 0, NULL, '', 23563);
INSERT INTO `os_patent_affair` VALUES (31326, 0, '2', 0, NULL, '', 23564);
INSERT INTO `os_patent_affair` VALUES (31327, 0, '2', 0, NULL, '', 23565);
INSERT INTO `os_patent_affair` VALUES (31328, 0, '2', 0, NULL, '', 23566);
INSERT INTO `os_patent_affair` VALUES (31329, 0, '2', 0, NULL, '', 23567);
INSERT INTO `os_patent_affair` VALUES (31330, 0, '2', 0, NULL, '', 23568);
INSERT INTO `os_patent_affair` VALUES (31331, 0, '1', 0, NULL, '', 23569);
INSERT INTO `os_patent_affair` VALUES (31332, 0, '2', 0, NULL, '', 23570);
INSERT INTO `os_patent_affair` VALUES (31333, 0, '2', 0, NULL, '', 23571);
INSERT INTO `os_patent_affair` VALUES (31334, 0, '2', 0, NULL, '', 23572);
INSERT INTO `os_patent_affair` VALUES (31335, 0, '2', 0, NULL, '', 23573);
INSERT INTO `os_patent_affair` VALUES (31336, 0, '2', 0, NULL, '', 23574);
INSERT INTO `os_patent_affair` VALUES (31337, 0, '2', 0, NULL, '', 23575);
INSERT INTO `os_patent_affair` VALUES (31338, 0, '2', 0, NULL, '', 23577);
INSERT INTO `os_patent_affair` VALUES (31339, 0, '1', 0, NULL, '', 23578);
INSERT INTO `os_patent_affair` VALUES (31340, 0, '2', 0, NULL, '', 23579);
INSERT INTO `os_patent_affair` VALUES (31341, 0, '2', 0, NULL, '', 23580);
INSERT INTO `os_patent_affair` VALUES (31342, 0, '2', 0, NULL, '', 23581);
INSERT INTO `os_patent_affair` VALUES (31343, 0, '2', 0, NULL, '', 23582);
INSERT INTO `os_patent_affair` VALUES (31344, 0, '2', 0, NULL, '', 23583);
INSERT INTO `os_patent_affair` VALUES (31345, 0, '2', 0, NULL, '', 23584);
INSERT INTO `os_patent_affair` VALUES (31346, 0, '2', 0, NULL, '', 23585);
INSERT INTO `os_patent_affair` VALUES (31347, 0, '2', 0, NULL, '', 23586);
INSERT INTO `os_patent_affair` VALUES (31348, 0, '2', 0, NULL, '', 23587);
INSERT INTO `os_patent_affair` VALUES (31349, 0, '2', 0, NULL, '', 23588);
INSERT INTO `os_patent_affair` VALUES (31350, 0, '2', 0, NULL, '', 23589);
INSERT INTO `os_patent_affair` VALUES (31351, 0, '2', 0, NULL, '', 23590);
INSERT INTO `os_patent_affair` VALUES (31352, 0, '2', 0, NULL, '', 23591);
INSERT INTO `os_patent_affair` VALUES (31353, 0, '2', 0, NULL, '', 23592);
INSERT INTO `os_patent_affair` VALUES (31354, 0, '1', 0, NULL, '', 23593);
INSERT INTO `os_patent_affair` VALUES (31355, 0, '2', 0, NULL, '', 23594);
INSERT INTO `os_patent_affair` VALUES (31356, 0, '2', 0, NULL, '', 23595);
INSERT INTO `os_patent_affair` VALUES (31357, 0, '2', 0, NULL, '', 23596);
INSERT INTO `os_patent_affair` VALUES (31358, 0, '1', 0, NULL, '', 23597);
INSERT INTO `os_patent_affair` VALUES (31359, 0, '1', 0, NULL, '', 23598);
INSERT INTO `os_patent_affair` VALUES (31360, 0, '2', 0, NULL, '', 23599);
INSERT INTO `os_patent_affair` VALUES (31361, 0, '2', 0, NULL, '', 23600);
INSERT INTO `os_patent_affair` VALUES (31362, 0, '2', 0, NULL, '', 23601);
INSERT INTO `os_patent_affair` VALUES (31363, 0, '2', 0, NULL, '', 23602);
INSERT INTO `os_patent_affair` VALUES (31364, 0, '2', 0, NULL, '', 23603);
INSERT INTO `os_patent_affair` VALUES (31365, 0, '2', 0, NULL, '', 23604);
INSERT INTO `os_patent_affair` VALUES (31366, 0, '2', 0, NULL, '', 23605);
INSERT INTO `os_patent_affair` VALUES (31367, 0, '2', 0, NULL, '', 23606);
INSERT INTO `os_patent_affair` VALUES (31368, 0, '2', 0, NULL, '', 23607);
INSERT INTO `os_patent_affair` VALUES (31369, 0, '2', 0, NULL, '', 23608);
INSERT INTO `os_patent_affair` VALUES (31370, 0, '2', 0, NULL, '', 23609);
INSERT INTO `os_patent_affair` VALUES (31371, 0, '2', 0, NULL, '', 23610);
INSERT INTO `os_patent_affair` VALUES (31372, 0, '2', 0, NULL, '', 23611);
INSERT INTO `os_patent_affair` VALUES (31373, 0, '2', 0, NULL, '', 23612);
INSERT INTO `os_patent_affair` VALUES (31374, 0, '2', 0, NULL, '', 23613);
INSERT INTO `os_patent_affair` VALUES (31375, 0, '2', 0, NULL, '', 23614);
INSERT INTO `os_patent_affair` VALUES (31376, 0, '2', 0, NULL, '', 23615);
INSERT INTO `os_patent_affair` VALUES (31377, 0, '2', 0, NULL, '', 23616);
INSERT INTO `os_patent_affair` VALUES (31378, 0, '1', 0, NULL, '', 23617);
INSERT INTO `os_patent_affair` VALUES (31379, 0, '1', 0, NULL, '', 23618);
INSERT INTO `os_patent_affair` VALUES (31380, 0, '2', 0, NULL, '', 23619);
INSERT INTO `os_patent_affair` VALUES (31381, 0, '1', 0, NULL, '', 23620);
INSERT INTO `os_patent_affair` VALUES (31382, 0, '2', 0, NULL, '', 23621);
INSERT INTO `os_patent_affair` VALUES (31383, 0, '2', 0, NULL, '', 23622);
INSERT INTO `os_patent_affair` VALUES (31384, 0, '2', 0, NULL, '', 23623);
INSERT INTO `os_patent_affair` VALUES (31385, 0, '1', 0, NULL, '', 23624);
INSERT INTO `os_patent_affair` VALUES (31386, 1625760000, '1', 3, '2021-07-09 | +PATENT GRANT | CN', '', 24065);
INSERT INTO `os_patent_affair` VALUES (31387, 1625760000, '1', 3, '2021-07-09 | +PATENT GRANT | CN', '', 24066);
INSERT INTO `os_patent_affair` VALUES (31388, 1625760000, '1', 3, '2021-07-09 | +PATENT GRANT | CN | 2020-09-01 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2020-08-07 | PUBLICATION | CN', '', 24067);
INSERT INTO `os_patent_affair` VALUES (31389, 1627315200, '2', 1, '2021-07-27 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-07-09 | PUBLICATION | CN', '', 24068);
INSERT INTO `os_patent_affair` VALUES (31390, 1627315200, '2', 1, '2021-07-27 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-07-09 | PUBLICATION | CN', '', 24069);
INSERT INTO `os_patent_affair` VALUES (31391, 1625500800, '1', 3, '2021-07-06 | +PATENT GRANT | CN', '', 24070);
INSERT INTO `os_patent_affair` VALUES (31392, 1625500800, '1', 3, '2021-07-06 | +PATENT GRANT | CN', '', 24071);
INSERT INTO `os_patent_affair` VALUES (31393, 1625500800, '1', 3, '2021-07-06 | +PATENT GRANT | CN', '', 24072);
INSERT INTO `os_patent_affair` VALUES (31394, 1625500800, '1', 3, '2021-07-06 | +PATENT GRANT | CN', '', 24073);
INSERT INTO `os_patent_affair` VALUES (31395, 1625500800, '1', 3, '2021-07-06 | +PATENT GRANT | CN', '', 24074);
INSERT INTO `os_patent_affair` VALUES (31396, 1625155200, '1', 3, '2021-07-02 | +PATENT GRANT | CN', '', 24075);
INSERT INTO `os_patent_affair` VALUES (31397, 1625155200, '1', 3, '2021-07-02 | +PATENT GRANT | CN', '', 24076);
INSERT INTO `os_patent_affair` VALUES (31398, 1625155200, '1', 3, '2021-12-03 | CHANGE OF NAME, TITLE OR ADDRESS | CN | 2021-07-02 | +PATENT GRANT | CN', '', 24077);
INSERT INTO `os_patent_affair` VALUES (31399, 1626710400, '2', 1, '2021-07-20 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-07-02 | PUBLICATION | CN', '', 24078);
INSERT INTO `os_patent_affair` VALUES (31400, 1626710400, '2', 1, '2021-07-20 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-07-02 | PUBLICATION | CN', '', 24079);
INSERT INTO `os_patent_affair` VALUES (31401, 1626710400, '2', 1, '2021-07-20 | ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION | CN | 2021-07-02 | PUBLICATION | CN', '', 24080);
INSERT INTO `os_patent_affair` VALUES (31402, 1624896000, '1', 3, '2021-06-29 | +PATENT GRANT | CN', '', 24081);
INSERT INTO `os_patent_affair` VALUES (31403, 1624896000, '1', 3, '2021-08-06 | TRANSFER OF PATENT RIGHT | CN | 2021-06-29 | +PATENT GRANT | CN', '', 24082);
INSERT INTO `os_patent_affair` VALUES (31404, 1624896000, '2', 3, '2021-08-06 | TRANSFER OF PATENT RIGHT | CN | 2021-06-29 | +PATENT GRANT | CN', '', 24082);
INSERT INTO `os_patent_affair` VALUES (31405, 1624896000, '1', 3, '2021-06-29 | +PATENT GRANT | CN', '', 24083);
INSERT INTO `os_patent_affair` VALUES (31406, 1624896000, '1', 3, '2021-06-29 | +PATENT GRANT | CN', '', 24084);
INSERT INTO `os_patent_affair` VALUES (31407, 1624550400, '1', 3, '2021-06-25 | +PATENT GRANT | CN', '', 24085);
INSERT INTO `os_patent_affair` VALUES (31408, 1624550400, '1', 3, '2021-06-25 | +PATENT GRANT | CN', '', 24086);
INSERT INTO `os_patent_affair` VALUES (31409, 1624550400, '2', 3, '2021-06-25 | +PATENT GRANT | CN', '', 24086);
INSERT INTO `os_patent_affair` VALUES (31410, 1624550400, '1', 3, '2021-06-25 | +PATENT GRANT | CN', '', 24087);
INSERT INTO `os_patent_affair` VALUES (31411, 1624550400, '1', 3, '2021-06-25 | +PATENT GRANT | CN', '', 24088);
INSERT INTO `os_patent_affair` VALUES (31412, 1624550400, '1', 3, '2021-06-25 | +PATENT GRANT | CN', '', 24089);
INSERT INTO `os_patent_affair` VALUES (31413, 1624550400, '1', 3, '2021-06-25 | +PATENT GRANT | CN', '', 24090);
INSERT INTO `os_patent_affair` VALUES (31414, 1624550400, '1', 3, '2021-06-25 | +PATENT GRANT | CN', '', 24091);
INSERT INTO `os_patent_affair` VALUES (31415, 1624550400, '1', 3, '2021-06-25 | +PATENT GRANT | CN', '', 24092);
INSERT INTO `os_patent_affair` VALUES (31416, 1624550400, '1', 3, '2021-06-25 | +PATENT GRANT | CN', '', 24093);

-- ----------------------------
-- Table structure for os_patent_agency
-- ----------------------------
DROP TABLE IF EXISTS `os_patent_agency`;
CREATE TABLE `os_patent_agency`  (
  `id` int(0) UNSIGNED NOT NULL AUTO_INCREMENT COMMENT 'ID',
  `name` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT '' COMMENT '机构名称',
  `city` int(0) NULL DEFAULT 2,
  PRIMARY KEY (`id`) USING BTREE
) ENGINE = InnoDB AUTO_INCREMENT = 938 CHARACTER SET = utf8 COLLATE = utf8_general_ci COMMENT = '专利信息代理机构表' ROW_FORMAT = Dynamic;

-- ----------------------------
-- Records of os_patent_agency
-- ----------------------------
INSERT INTO `os_patent_agency` VALUES (849, 'NIXON PEABODY LLP', 2);
INSERT INTO `os_patent_agency` VALUES (850, 'KEATING & BENNETT,LLP', 2);
INSERT INTO `os_patent_agency` VALUES (851, 'KRATZ,QUINTOS & HANSON,LLP', 2);
INSERT INTO `os_patent_agency` VALUES (852, 'GRÜNECKER PATENT- UND RECHTSANWÄLTE PARTG MBB', 2);
INSERT INTO `os_patent_agency` VALUES (853, 'NIXON PEABODY, LLP', 2);
INSERT INTO `os_patent_agency` VALUES (854, 'KÖRFER, THOMAS', 2);
INSERT INTO `os_patent_agency` VALUES (855, 'MITSCHERLICH, PATENT- UND RECHTSANWÄLTE PARTMBB', 2);
INSERT INTO `os_patent_agency` VALUES (856, 'SAPALO VELEZ BUNDANG & BULILAN LAW OFFICES', 2);
INSERT INTO `os_patent_agency` VALUES (857, 'GRÜNECKER, KINKELDEY, STOCKMAIR & SCHWANHÄUSSER ANWALTSSOZIETÄT', 2);
INSERT INTO `os_patent_agency` VALUES (858, 'GRÜNECKER, KINKELDEY, STOCKMAIR & SCHWANHÄUSSER', 2);
INSERT INTO `os_patent_agency` VALUES (859, 'SUGHRUE MION,PLLC', 2);
INSERT INTO `os_patent_agency` VALUES (860, 'KEATING & BENNET,LLP', 2);
INSERT INTO `os_patent_agency` VALUES (861, 'STREHL SCHÜBEL-HOPF & PARTNER', 2);
INSERT INTO `os_patent_agency` VALUES (862, 'KRATZ,QUINTOS & HANSON LLP', 2);
INSERT INTO `os_patent_agency` VALUES (863, '特許業務法人京都国際特許事務所', 2);
INSERT INTO `os_patent_agency` VALUES (864, '特許業務法人 ユニアス国際特許事務所', 2);
INSERT INTO `os_patent_agency` VALUES (865, 'KNOBBE MARTENS OLSON & BEAR LLP', 2);
INSERT INTO `os_patent_agency` VALUES (866, 'SAJDA, WOLF E.', 2);
INSERT INTO `os_patent_agency` VALUES (867, 'MEISSNER BOLTE PATENTANWÄLTE RECHTSANWÄLTE PARTNERSCHAFT MBB', 2);
INSERT INTO `os_patent_agency` VALUES (868, 'OLIFF & BERRIDGE, PLC', 2);
INSERT INTO `os_patent_agency` VALUES (869, 'KEATING & BENNETT, LLP', 2);
INSERT INTO `os_patent_agency` VALUES (870, 'SUGHRUE MION, PLLC', 2);
INSERT INTO `os_patent_agency` VALUES (871, 'MESSRS. A. Q. ANCHETA & PARTNERS', 2);
INSERT INTO `os_patent_agency` VALUES (872, 'A. Q. ANCHETA & PARTNERS', 2);
INSERT INTO `os_patent_agency` VALUES (873, 'DONALDSON & BURKINSHAW LLP | MARKS & CLERK SINGAPORE LLP', 2);
INSERT INTO `os_patent_agency` VALUES (874, 'THUN, CLEMENS', 2);
INSERT INTO `os_patent_agency` VALUES (875, 'KRATZ, QUINTOS & HANSON, LLP', 2);
INSERT INTO `os_patent_agency` VALUES (876, 'HOEGER, STELLRECHT & PARTNER PATENTANWÄLTE MBB', 2);
INSERT INTO `os_patent_agency` VALUES (877, 'BIRCH,STEWART,KOLASCH & BIRCH,LLP', 2);
INSERT INTO `os_patent_agency` VALUES (878, 'MUSKER, DAVID CHARLES', 2);
INSERT INTO `os_patent_agency` VALUES (879, 'MAUCHER JENKINS PATENTANWÄLTE & RECHTSANWÄLTE', 2);
INSERT INTO `os_patent_agency` VALUES (880, 'OLIFF PLC', 2);
INSERT INTO `os_patent_agency` VALUES (881, 'STREHL SCHÜBEL-HOPF & PARTNER MBB PATENTANWÄLTE EUROPEAN PATENT ATTORNEYS', 2);
INSERT INTO `os_patent_agency` VALUES (882, 'KEATING & BENNETT,LLP.', 2);
INSERT INTO `os_patent_agency` VALUES (883, 'DANNEMANN, SIEMSEN, BIGLER & IPANEMA MOREIRA', 2);
INSERT INTO `os_patent_agency` VALUES (884, 'SR HUEBNER - MUNICH PATENTANWALTSPARTNERSCHAFT MBB', 2);
INSERT INTO `os_patent_agency` VALUES (885, 'VIERING, JENTSCHURA & PARTNER MBB PATENT- UND RECHTSANWÄLTE', 2);
INSERT INTO `os_patent_agency` VALUES (886, 'WESTERMAN, HATTORI, DANIELS & ADRIAN, LLP', 2);
INSERT INTO `os_patent_agency` VALUES (887, 'DOMPATENT VON KREISLER SELTING WERNER - PARTNERSCHAFT VON PATENT- UND RECHTSANWÄLTEN MBB', 2);
INSERT INTO `os_patent_agency` VALUES (888, 'MUNCY, GEISSLER, OLDS & LOWE, P.C.', 2);
INSERT INTO `os_patent_agency` VALUES (889, 'DOMPATENT VON KREISLER SELTING WERNER - PARTNERSCHAFT VON PATENTANWÄLTEN UND RECHTSANWÄLTEN MBB', 2);
INSERT INTO `os_patent_agency` VALUES (890, 'RUPP, CHRISTIAN', 2);
INSERT INTO `os_patent_agency` VALUES (891, 'BOZICEVIC, FIELD & FANCIS LLP', 2);
INSERT INTO `os_patent_agency` VALUES (892, 'INVENCO.,LTD', 2);
INSERT INTO `os_patent_agency` VALUES (893, 'ポレール特許業務法人', 2);
INSERT INTO `os_patent_agency` VALUES (894, 'DIEHL & PARTNER GBR', 2);
INSERT INTO `os_patent_agency` VALUES (895, 'DIEHL & PARTNER PATENT- UND RECHTSANWALTSKANZLEI MBB', 2);
INSERT INTO `os_patent_agency` VALUES (896, 'CROWELL & MORING LLP', 2);
INSERT INTO `os_patent_agency` VALUES (897, 'T&T INVENMARK CO., LTD.', 2);
INSERT INTO `os_patent_agency` VALUES (898, '特許業務法人みのり特許事務所', 2);
INSERT INTO `os_patent_agency` VALUES (899, 'GRITSCHNEDER, SEBASTIAN', 2);
INSERT INTO `os_patent_agency` VALUES (900, 'ABITZ & PARTNER PATENTANWÄLTE MBB', 2);
INSERT INTO `os_patent_agency` VALUES (901, 'DIEHL & PARTNER', 2);
INSERT INTO `os_patent_agency` VALUES (902, '青稜特許業務法人', 2);
INSERT INTO `os_patent_agency` VALUES (903, '特許業務法人太陽国際特許事務所', 2);
INSERT INTO `os_patent_agency` VALUES (904, 'EP&C', 2);
INSERT INTO `os_patent_agency` VALUES (905, 'POLSINELLI PC', 2);
INSERT INTO `os_patent_agency` VALUES (906, '特許業務法人平田国際特許事務所', 2);
INSERT INTO `os_patent_agency` VALUES (907, 'BETTEN & RESCH PATENT- UND RECHTSANWÄLTE PARTGMBB', 2);
INSERT INTO `os_patent_agency` VALUES (908, 'ROMULO MABANTA BUENAVENTURA SAYOC AND DELOS ANGELES', 2);
INSERT INTO `os_patent_agency` VALUES (909, '深圳市德力知识产权代理事务所', 2);
INSERT INTO `os_patent_agency` VALUES (910, '深圳市威世博知识产权代理事务所(普通合伙)', 2);
INSERT INTO `os_patent_agency` VALUES (911, '深圳翼盛智成知识产权事务所(普通合伙)', 2);
INSERT INTO `os_patent_agency` VALUES (912, '广州三环专利代理有限公司', 2);
INSERT INTO `os_patent_agency` VALUES (913, '深圳市铭粤知识产权代理有限公司', 2);
INSERT INTO `os_patent_agency` VALUES (914, '广州三环专利商标代理有限公司', 2);
INSERT INTO `os_patent_agency` VALUES (915, '深圳汇智容达专利商标事务所(普通合伙)', 2);
INSERT INTO `os_patent_agency` VALUES (916, '深圳紫藤知识产权代理有限公司', 2);
INSERT INTO `os_patent_agency` VALUES (917, '广州华进联合专利商标代理有限公司', 2);
INSERT INTO `os_patent_agency` VALUES (918, '深圳市世纪恒程知识产权代理事务所', 2);
INSERT INTO `os_patent_agency` VALUES (919, '北京聿宏知识产权代理有限公司', 2);
INSERT INTO `os_patent_agency` VALUES (920, '北京华锐创新知识产权代理有限公司', 2);
INSERT INTO `os_patent_agency` VALUES (921, '东莞市永桥知识产权代理事务所(普通合伙)', 2);
INSERT INTO `os_patent_agency` VALUES (922, '北京怡丰知识产权代理有限公司', 2);
INSERT INTO `os_patent_agency` VALUES (923, '上海三方专利事务所(普通合伙)', 2);
INSERT INTO `os_patent_agency` VALUES (924, '深圳市智胜联合知识产权代理有限公司', 2);
INSERT INTO `os_patent_agency` VALUES (925, '深圳市恒和大知识产权代理有限公司', 2);
INSERT INTO `os_patent_agency` VALUES (926, '北京华仁联合知识产权代理有限公司', 2);
INSERT INTO `os_patent_agency` VALUES (927, '成都市鼎宏恒业知识产权代理事务所(特殊普通合伙)', 2);
INSERT INTO `os_patent_agency` VALUES (928, '深圳市卓科知识产权代理有限公司', 2);
INSERT INTO `os_patent_agency` VALUES (929, '北京市磐华律师事务所', 2);
INSERT INTO `os_patent_agency` VALUES (930, '上海申新律师事务所', 2);
INSERT INTO `os_patent_agency` VALUES (931, '上海光华专利事务所(普通合伙)', 2);
INSERT INTO `os_patent_agency` VALUES (932, '深圳中细软知识产权代理有限公司', 2);
INSERT INTO `os_patent_agency` VALUES (933, '深圳市亚易专利代理事务所(普通合伙)', 2);
INSERT INTO `os_patent_agency` VALUES (934, '深圳市智科友专利商标事务所', 2);
INSERT INTO `os_patent_agency` VALUES (935, '深圳中一联合知识产权代理有限公司', 2);
INSERT INTO `os_patent_agency` VALUES (936, '北京国坤专利代理事务所(普通合伙)', 2);
INSERT INTO `os_patent_agency` VALUES (937, '深圳市创富知识产权代理有限公司', 2);

-- ----------------------------
-- Table structure for os_patent_agent
-- ----------------------------
DROP TABLE IF EXISTS `os_patent_agent`;
CREATE TABLE `os_patent_agent`  (
  `id` int(0) UNSIGNED NOT NULL AUTO_INCREMENT COMMENT 'ID',
  `name` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT '' COMMENT '代理人',
  PRIMARY KEY (`id`) USING BTREE
) ENGINE = InnoDB AUTO_INCREMENT = 638 CHARACTER SET = utf8 COLLATE = utf8_general_ci COMMENT = '专利信息代理人表' ROW_FORMAT = Dynamic;

-- ----------------------------
-- Records of os_patent_agent
-- ----------------------------
INSERT INTO `os_patent_agent` VALUES (493, 'COSTELLIA,JEFFREYL.');
INSERT INTO `os_patent_agent` VALUES (494, '河備健二');
INSERT INTO `os_patent_agent` VALUES (495, '奥田誠司');
INSERT INTO `os_patent_agent` VALUES (496, '辻田幸史');
INSERT INTO `os_patent_agent` VALUES (497, '清水善廣');
INSERT INTO `os_patent_agent` VALUES (498, '阿部伸一');
INSERT INTO `os_patent_agent` VALUES (499, '辰巳忠宏');
INSERT INTO `os_patent_agent` VALUES (500, '喜多修市');
INSERT INTO `os_patent_agent` VALUES (501, '홍기천');
INSERT INTO `os_patent_agent` VALUES (502, 'HONGKEECHON');
INSERT INTO `os_patent_agent` VALUES (503, '高石橘馬');
INSERT INTO `os_patent_agent` VALUES (504, 'WOORINPATENTFIRM');
INSERT INTO `os_patent_agent` VALUES (505, '강일우');
INSERT INTO `os_patent_agent` VALUES (506, '小林良平');
INSERT INTO `os_patent_agent` VALUES (507, '谷口聡');
INSERT INTO `os_patent_agent` VALUES (508, '梶崎弘一');
INSERT INTO `os_patent_agent` VALUES (509, '尾崎雄三');
INSERT INTO `os_patent_agent` VALUES (510, '谷口俊彦');
INSERT INTO `os_patent_agent` VALUES (511, '특허법인우린');
INSERT INTO `os_patent_agent` VALUES (512, '특허법인필앤온지');
INSERT INTO `os_patent_agent` VALUES (513, 'CAROLINEANNEFRANCISXAVIERMONEY');
INSERT INTO `os_patent_agent` VALUES (514, 'MACPATENT&LAWFIRM');
INSERT INTO `os_patent_agent` VALUES (515, 'HONGJONGWON');
INSERT INTO `os_patent_agent` VALUES (516, 'HONGJAEIL');
INSERT INTO `os_patent_agent` VALUES (517, '河野登夫');
INSERT INTO `os_patent_agent` VALUES (518, 'LAVERY,DEBILLY,LLP');
INSERT INTO `os_patent_agent` VALUES (519, '이구해');
INSERT INTO `os_patent_agent` VALUES (520, '전재윤');
INSERT INTO `os_patent_agent` VALUES (521, '이상혁');
INSERT INTO `os_patent_agent` VALUES (522, '정석원');
INSERT INTO `os_patent_agent` VALUES (523, 'DANNEMANN,SIEMSEN,BIGLER&IPANEMAMOREIRA');
INSERT INTO `os_patent_agent` VALUES (524, 'MARIOPONCEWALRAVEN');
INSERT INTO `os_patent_agent` VALUES (525, 'LEEGOOHAE');
INSERT INTO `os_patent_agent` VALUES (526, 'JAEYUNJEON');
INSERT INTO `os_patent_agent` VALUES (527, 'JUNGSEOKWON');
INSERT INTO `os_patent_agent` VALUES (528, 'EAROOKANG');
INSERT INTO `os_patent_agent` VALUES (529, 'LEEKYUNGHEE');
INSERT INTO `os_patent_agent` VALUES (530, 'LEESANGHYOUK');
INSERT INTO `os_patent_agent` VALUES (531, 'CHOHWIKEON');
INSERT INTO `os_patent_agent` VALUES (532, '宮園博一');
INSERT INTO `os_patent_agent` VALUES (533, '河野英仁');
INSERT INTO `os_patent_agent` VALUES (534, '오수안');
INSERT INTO `os_patent_agent` VALUES (535, '조휘건');
INSERT INTO `os_patent_agent` VALUES (536, '이경희');
INSERT INTO `os_patent_agent` VALUES (537, '하영욱');
INSERT INTO `os_patent_agent` VALUES (538, 'FIELD,BRETE.');
INSERT INTO `os_patent_agent` VALUES (539, '鮫島睦');
INSERT INTO `os_patent_agent` VALUES (540, '言上惠一');
INSERT INTO `os_patent_agent` VALUES (541, '山尾憲人');
INSERT INTO `os_patent_agent` VALUES (542, '西和哉');
INSERT INTO `os_patent_agent` VALUES (543, '宇佐美亜矢');
INSERT INTO `os_patent_agent` VALUES (544, 'BAE,KIM&LEEIPGROUP');
INSERT INTO `os_patent_agent` VALUES (545, '特許業務法人京都国際特許事務所');
INSERT INTO `os_patent_agent` VALUES (546, '특허법인태평양');
INSERT INTO `os_patent_agent` VALUES (547, '小池晃');
INSERT INTO `os_patent_agent` VALUES (548, '伊賀誠司');
INSERT INTO `os_patent_agent` VALUES (549, '藤井稔也');
INSERT INTO `os_patent_agent` VALUES (550, '祐成篤哉');
INSERT INTO `os_patent_agent` VALUES (551, '梶谷美道');
INSERT INTO `os_patent_agent` VALUES (552, '平田忠雄');
INSERT INTO `os_patent_agent` VALUES (553, '角田賢二');
INSERT INTO `os_patent_agent` VALUES (554, '中村恵子');
INSERT INTO `os_patent_agent` VALUES (555, '遠藤和光');
INSERT INTO `os_patent_agent` VALUES (556, '野見山孝');
INSERT INTO `os_patent_agent` VALUES (557, '伊藤浩行');
INSERT INTO `os_patent_agent` VALUES (558, '高石健二');
INSERT INTO `os_patent_agent` VALUES (559, '正林真之');
INSERT INTO `os_patent_agent` VALUES (560, '林一好');
INSERT INTO `os_patent_agent` VALUES (561, '특허법인한성');
INSERT INTO `os_patent_agent` VALUES (562, '大釜典子');
INSERT INTO `os_patent_agent` VALUES (563, 'GALANT,RON');
INSERT INTO `os_patent_agent` VALUES (564, 'SPRUSON&FERGUSON(ASIA)PTELTD');
INSERT INTO `os_patent_agent` VALUES (565, '특허법인한얼');
INSERT INTO `os_patent_agent` VALUES (566, '特許業務法人磯野国際特許商標事務所');
INSERT INTO `os_patent_agent` VALUES (567, 'OKUDASEIJI');
INSERT INTO `os_patent_agent` VALUES (568, '林才桂');
INSERT INTO `os_patent_agent` VALUES (569, '钟子敏');
INSERT INTO `os_patent_agent` VALUES (570, '黄威');
INSERT INTO `os_patent_agent` VALUES (571, '郝传鑫');
INSERT INTO `os_patent_agent` VALUES (572, '熊永强');
INSERT INTO `os_patent_agent` VALUES (573, '孙伟峰');
INSERT INTO `os_patent_agent` VALUES (574, '顾楠楠');
INSERT INTO `os_patent_agent` VALUES (575, '黄进');
INSERT INTO `os_patent_agent` VALUES (576, '阳志全');
INSERT INTO `os_patent_agent` VALUES (577, '武岑飞');
INSERT INTO `os_patent_agent` VALUES (578, '王中华');
INSERT INTO `os_patent_agent` VALUES (579, '潘中毅');
INSERT INTO `os_patent_agent` VALUES (580, '熊贤卿');
INSERT INTO `os_patent_agent` VALUES (581, '刘巍');
INSERT INTO `os_patent_agent` VALUES (582, '鞠骁');
INSERT INTO `os_patent_agent` VALUES (583, '张洋');
INSERT INTO `os_patent_agent` VALUES (584, '杨瑞');
INSERT INTO `os_patent_agent` VALUES (585, '汪阮磊');
INSERT INTO `os_patent_agent` VALUES (586, '李汉亮');
INSERT INTO `os_patent_agent` VALUES (587, '黄灵飞');
INSERT INTO `os_patent_agent` VALUES (588, '李新干');
INSERT INTO `os_patent_agent` VALUES (589, '彭绪坤');
INSERT INTO `os_patent_agent` VALUES (590, '何辉');
INSERT INTO `os_patent_agent` VALUES (591, '杨艇要');
INSERT INTO `os_patent_agent` VALUES (592, '远明');
INSERT INTO `os_patent_agent` VALUES (593, '张晓薇');
INSERT INTO `os_patent_agent` VALUES (594, '唐秀萍');
INSERT INTO `os_patent_agent` VALUES (595, '徐世俊');
INSERT INTO `os_patent_agent` VALUES (596, '吕姝娟');
INSERT INTO `os_patent_agent` VALUES (597, '刁文魁');
INSERT INTO `os_patent_agent` VALUES (598, '高杨丽');
INSERT INTO `os_patent_agent` VALUES (599, '王芳芳');
INSERT INTO `os_patent_agent` VALUES (600, '刘泳麟');
INSERT INTO `os_patent_agent` VALUES (601, '官建红');
INSERT INTO `os_patent_agent` VALUES (602, '黄舒悦');
INSERT INTO `os_patent_agent` VALUES (603, '王红红');
INSERT INTO `os_patent_agent` VALUES (604, '何志军');
INSERT INTO `os_patent_agent` VALUES (605, '裴磊磊');
INSERT INTO `os_patent_agent` VALUES (606, '杜蕾');
INSERT INTO `os_patent_agent` VALUES (607, '李健');
INSERT INTO `os_patent_agent` VALUES (608, '陈斌');
INSERT INTO `os_patent_agent` VALUES (609, '方艳丽');
INSERT INTO `os_patent_agent` VALUES (610, '邓敬威');
INSERT INTO `os_patent_agent` VALUES (611, '马广旭');
INSERT INTO `os_patent_agent` VALUES (612, '熊明');
INSERT INTO `os_patent_agent` VALUES (613, '熊恒定');
INSERT INTO `os_patent_agent` VALUES (614, '林青中');
INSERT INTO `os_patent_agent` VALUES (615, '胡海国');
INSERT INTO `os_patent_agent` VALUES (616, '吴大建');
INSERT INTO `os_patent_agent` VALUES (617, '黄景华');
INSERT INTO `os_patent_agent` VALUES (618, '姜华');
INSERT INTO `os_patent_agent` VALUES (619, '于振强');
INSERT INTO `os_patent_agent` VALUES (620, '吴玮');
INSERT INTO `os_patent_agent` VALUES (621, '齐文剑');
INSERT INTO `os_patent_agent` VALUES (622, '汪少华');
INSERT INTO `os_patent_agent` VALUES (623, '张欢');
INSERT INTO `os_patent_agent` VALUES (624, '谢敏');
INSERT INTO `os_patent_agent` VALUES (625, '赵辉丽');
INSERT INTO `os_patent_agent` VALUES (626, '潘晓');
INSERT INTO `os_patent_agent` VALUES (627, '郭佳寅');
INSERT INTO `os_patent_agent` VALUES (628, '林志豪');
INSERT INTO `os_patent_agent` VALUES (629, '倪静');
INSERT INTO `os_patent_agent` VALUES (630, '孔祥丹');
INSERT INTO `os_patent_agent` VALUES (631, '彭嘉林');
INSERT INTO `os_patent_agent` VALUES (632, '刘欣');
INSERT INTO `os_patent_agent` VALUES (633, '曲家彬');
INSERT INTO `os_patent_agent` VALUES (634, '郭雨桐');
INSERT INTO `os_patent_agent` VALUES (635, '赵红霞');
INSERT INTO `os_patent_agent` VALUES (636, '周伟锋');
INSERT INTO `os_patent_agent` VALUES (637, '曾敬');

-- ----------------------------
-- Table structure for os_patent_agent_link
-- ----------------------------
DROP TABLE IF EXISTS `os_patent_agent_link`;
CREATE TABLE `os_patent_agent_link`  (
  `id` int(0) NOT NULL AUTO_INCREMENT,
  `pid` int(0) NOT NULL COMMENT '专利Id',
  `aid` int(0) NOT NULL COMMENT '代理人ID',
  PRIMARY KEY (`id`) USING BTREE
) ENGINE = InnoDB AUTO_INCREMENT = 14760 CHARACTER SET = utf8 COLLATE = utf8_general_ci COMMENT = '代理人关联专利表' ROW_FORMAT = Dynamic;

-- ----------------------------
-- Records of os_patent_agent_link
-- ----------------------------
INSERT INTO `os_patent_agent_link` VALUES (11303, 23625, 568);
INSERT INTO `os_patent_agent_link` VALUES (11304, 23626, 568);
INSERT INTO `os_patent_agent_link` VALUES (11305, 23627, 568);
INSERT INTO `os_patent_agent_link` VALUES (11306, 23628, 568);
INSERT INTO `os_patent_agent_link` VALUES (11307, 23629, 568);
INSERT INTO `os_patent_agent_link` VALUES (11308, 23630, 568);
INSERT INTO `os_patent_agent_link` VALUES (11309, 23631, 568);
INSERT INTO `os_patent_agent_link` VALUES (11310, 23632, 568);
INSERT INTO `os_patent_agent_link` VALUES (11311, 23633, 569);
INSERT INTO `os_patent_agent_link` VALUES (11312, 23634, 570);
INSERT INTO `os_patent_agent_link` VALUES (11313, 23635, 568);
INSERT INTO `os_patent_agent_link` VALUES (11314, 23636, 571);
INSERT INTO `os_patent_agent_link` VALUES (11315, 23636, 572);
INSERT INTO `os_patent_agent_link` VALUES (11316, 23637, 568);
INSERT INTO `os_patent_agent_link` VALUES (11317, 23638, 569);
INSERT INTO `os_patent_agent_link` VALUES (11318, 23639, 573);
INSERT INTO `os_patent_agent_link` VALUES (11319, 23639, 574);
INSERT INTO `os_patent_agent_link` VALUES (11320, 23640, 573);
INSERT INTO `os_patent_agent_link` VALUES (11321, 23640, 574);
INSERT INTO `os_patent_agent_link` VALUES (11322, 23641, 573);
INSERT INTO `os_patent_agent_link` VALUES (11323, 23641, 574);
INSERT INTO `os_patent_agent_link` VALUES (11324, 23642, 568);
INSERT INTO `os_patent_agent_link` VALUES (11325, 23643, 569);
INSERT INTO `os_patent_agent_link` VALUES (11326, 23644, 573);
INSERT INTO `os_patent_agent_link` VALUES (11327, 23644, 574);
INSERT INTO `os_patent_agent_link` VALUES (11328, 23645, 573);
INSERT INTO `os_patent_agent_link` VALUES (11329, 23645, 574);
INSERT INTO `os_patent_agent_link` VALUES (11330, 23646, 568);
INSERT INTO `os_patent_agent_link` VALUES (11331, 23647, 568);
INSERT INTO `os_patent_agent_link` VALUES (11332, 23648, 568);
INSERT INTO `os_patent_agent_link` VALUES (11333, 23649, 568);
INSERT INTO `os_patent_agent_link` VALUES (11334, 23650, 568);
INSERT INTO `os_patent_agent_link` VALUES (11335, 23651, 568);
INSERT INTO `os_patent_agent_link` VALUES (11336, 23652, 568);
INSERT INTO `os_patent_agent_link` VALUES (11337, 23653, 568);
INSERT INTO `os_patent_agent_link` VALUES (11338, 23654, 568);
INSERT INTO `os_patent_agent_link` VALUES (11339, 23655, 571);
INSERT INTO `os_patent_agent_link` VALUES (11340, 23655, 572);
INSERT INTO `os_patent_agent_link` VALUES (11341, 23656, 573);
INSERT INTO `os_patent_agent_link` VALUES (11342, 23656, 575);
INSERT INTO `os_patent_agent_link` VALUES (11343, 23657, 569);
INSERT INTO `os_patent_agent_link` VALUES (11344, 23658, 569);
INSERT INTO `os_patent_agent_link` VALUES (11345, 23659, 568);
INSERT INTO `os_patent_agent_link` VALUES (11346, 23660, 571);
INSERT INTO `os_patent_agent_link` VALUES (11347, 23660, 572);
INSERT INTO `os_patent_agent_link` VALUES (11348, 23661, 571);
INSERT INTO `os_patent_agent_link` VALUES (11349, 23661, 572);
INSERT INTO `os_patent_agent_link` VALUES (11350, 23662, 571);
INSERT INTO `os_patent_agent_link` VALUES (11351, 23662, 572);
INSERT INTO `os_patent_agent_link` VALUES (11352, 23663, 571);
INSERT INTO `os_patent_agent_link` VALUES (11353, 23663, 572);
INSERT INTO `os_patent_agent_link` VALUES (11354, 23664, 570);
INSERT INTO `os_patent_agent_link` VALUES (11355, 23665, 573);
INSERT INTO `os_patent_agent_link` VALUES (11356, 23665, 576);
INSERT INTO `os_patent_agent_link` VALUES (11357, 23666, 573);
INSERT INTO `os_patent_agent_link` VALUES (11358, 23666, 577);
INSERT INTO `os_patent_agent_link` VALUES (11359, 23667, 573);
INSERT INTO `os_patent_agent_link` VALUES (11360, 23668, 573);
INSERT INTO `os_patent_agent_link` VALUES (11361, 23668, 577);
INSERT INTO `os_patent_agent_link` VALUES (11362, 23669, 573);
INSERT INTO `os_patent_agent_link` VALUES (11363, 23669, 576);
INSERT INTO `os_patent_agent_link` VALUES (11364, 23670, 573);
INSERT INTO `os_patent_agent_link` VALUES (11365, 23670, 576);
INSERT INTO `os_patent_agent_link` VALUES (11366, 23671, 573);
INSERT INTO `os_patent_agent_link` VALUES (11367, 23671, 577);
INSERT INTO `os_patent_agent_link` VALUES (11368, 23672, 570);
INSERT INTO `os_patent_agent_link` VALUES (11369, 23673, 568);
INSERT INTO `os_patent_agent_link` VALUES (11370, 23673, 578);
INSERT INTO `os_patent_agent_link` VALUES (11371, 23674, 568);
INSERT INTO `os_patent_agent_link` VALUES (11372, 23675, 579);
INSERT INTO `os_patent_agent_link` VALUES (11373, 23675, 580);
INSERT INTO `os_patent_agent_link` VALUES (11374, 23676, 573);
INSERT INTO `os_patent_agent_link` VALUES (11375, 23676, 576);
INSERT INTO `os_patent_agent_link` VALUES (11376, 23677, 568);
INSERT INTO `os_patent_agent_link` VALUES (11377, 23677, 578);
INSERT INTO `os_patent_agent_link` VALUES (11378, 23678, 568);
INSERT INTO `os_patent_agent_link` VALUES (11379, 23678, 578);
INSERT INTO `os_patent_agent_link` VALUES (11380, 23679, 568);
INSERT INTO `os_patent_agent_link` VALUES (11381, 23679, 578);
INSERT INTO `os_patent_agent_link` VALUES (11382, 23680, 568);
INSERT INTO `os_patent_agent_link` VALUES (11383, 23681, 568);
INSERT INTO `os_patent_agent_link` VALUES (11384, 23681, 581);
INSERT INTO `os_patent_agent_link` VALUES (11385, 23682, 568);
INSERT INTO `os_patent_agent_link` VALUES (11386, 23682, 582);
INSERT INTO `os_patent_agent_link` VALUES (11387, 23683, 568);
INSERT INTO `os_patent_agent_link` VALUES (11388, 23684, 568);
INSERT INTO `os_patent_agent_link` VALUES (11389, 23685, 571);
INSERT INTO `os_patent_agent_link` VALUES (11390, 23685, 572);
INSERT INTO `os_patent_agent_link` VALUES (11391, 23686, 570);
INSERT INTO `os_patent_agent_link` VALUES (11392, 23687, 570);
INSERT INTO `os_patent_agent_link` VALUES (11393, 23688, 573);
INSERT INTO `os_patent_agent_link` VALUES (11394, 23688, 575);
INSERT INTO `os_patent_agent_link` VALUES (11395, 23689, 573);
INSERT INTO `os_patent_agent_link` VALUES (11396, 23690, 570);
INSERT INTO `os_patent_agent_link` VALUES (11397, 23691, 570);
INSERT INTO `os_patent_agent_link` VALUES (11398, 23692, 570);
INSERT INTO `os_patent_agent_link` VALUES (11399, 23693, 570);
INSERT INTO `os_patent_agent_link` VALUES (11400, 23694, 570);
INSERT INTO `os_patent_agent_link` VALUES (11401, 23695, 570);
INSERT INTO `os_patent_agent_link` VALUES (11402, 23696, 570);
INSERT INTO `os_patent_agent_link` VALUES (11403, 23697, 570);
INSERT INTO `os_patent_agent_link` VALUES (11404, 23698, 568);
INSERT INTO `os_patent_agent_link` VALUES (11405, 23698, 582);
INSERT INTO `os_patent_agent_link` VALUES (11406, 23699, 570);
INSERT INTO `os_patent_agent_link` VALUES (11407, 23700, 570);
INSERT INTO `os_patent_agent_link` VALUES (11408, 23701, 570);
INSERT INTO `os_patent_agent_link` VALUES (11409, 23702, 570);
INSERT INTO `os_patent_agent_link` VALUES (11410, 23703, 570);
INSERT INTO `os_patent_agent_link` VALUES (11411, 23704, 570);
INSERT INTO `os_patent_agent_link` VALUES (11412, 23705, 568);
INSERT INTO `os_patent_agent_link` VALUES (11413, 23705, 583);
INSERT INTO `os_patent_agent_link` VALUES (11414, 23706, 568);
INSERT INTO `os_patent_agent_link` VALUES (11415, 23706, 581);
INSERT INTO `os_patent_agent_link` VALUES (11416, 23707, 570);
INSERT INTO `os_patent_agent_link` VALUES (11417, 23708, 570);
INSERT INTO `os_patent_agent_link` VALUES (11418, 23709, 570);
INSERT INTO `os_patent_agent_link` VALUES (11419, 23710, 570);
INSERT INTO `os_patent_agent_link` VALUES (11420, 23711, 570);
INSERT INTO `os_patent_agent_link` VALUES (11421, 23712, 570);
INSERT INTO `os_patent_agent_link` VALUES (11422, 23713, 570);
INSERT INTO `os_patent_agent_link` VALUES (11423, 23714, 568);
INSERT INTO `os_patent_agent_link` VALUES (11424, 23714, 581);
INSERT INTO `os_patent_agent_link` VALUES (11425, 23715, 570);
INSERT INTO `os_patent_agent_link` VALUES (11426, 23716, 570);
INSERT INTO `os_patent_agent_link` VALUES (11427, 23717, 570);
INSERT INTO `os_patent_agent_link` VALUES (11428, 23718, 570);
INSERT INTO `os_patent_agent_link` VALUES (11429, 23719, 570);
INSERT INTO `os_patent_agent_link` VALUES (11430, 23720, 570);
INSERT INTO `os_patent_agent_link` VALUES (11431, 23721, 570);
INSERT INTO `os_patent_agent_link` VALUES (11432, 23722, 570);
INSERT INTO `os_patent_agent_link` VALUES (11433, 23723, 570);
INSERT INTO `os_patent_agent_link` VALUES (11434, 23724, 570);
INSERT INTO `os_patent_agent_link` VALUES (11435, 23725, 570);
INSERT INTO `os_patent_agent_link` VALUES (11436, 23726, 570);
INSERT INTO `os_patent_agent_link` VALUES (11437, 23727, 570);
INSERT INTO `os_patent_agent_link` VALUES (11438, 23728, 570);
INSERT INTO `os_patent_agent_link` VALUES (11439, 23729, 570);
INSERT INTO `os_patent_agent_link` VALUES (11440, 23730, 570);
INSERT INTO `os_patent_agent_link` VALUES (11441, 23731, 570);
INSERT INTO `os_patent_agent_link` VALUES (11442, 23732, 570);
INSERT INTO `os_patent_agent_link` VALUES (11443, 23733, 570);
INSERT INTO `os_patent_agent_link` VALUES (11444, 23734, 570);
INSERT INTO `os_patent_agent_link` VALUES (11445, 23735, 570);
INSERT INTO `os_patent_agent_link` VALUES (11446, 23736, 570);
INSERT INTO `os_patent_agent_link` VALUES (11447, 23737, 570);
INSERT INTO `os_patent_agent_link` VALUES (11448, 23738, 570);
INSERT INTO `os_patent_agent_link` VALUES (11449, 23739, 570);
INSERT INTO `os_patent_agent_link` VALUES (11450, 23740, 570);
INSERT INTO `os_patent_agent_link` VALUES (11451, 23741, 570);
INSERT INTO `os_patent_agent_link` VALUES (11452, 23742, 570);
INSERT INTO `os_patent_agent_link` VALUES (11453, 23743, 570);
INSERT INTO `os_patent_agent_link` VALUES (11454, 23744, 570);
INSERT INTO `os_patent_agent_link` VALUES (11455, 23745, 584);
INSERT INTO `os_patent_agent_link` VALUES (11456, 23746, 570);
INSERT INTO `os_patent_agent_link` VALUES (11457, 23747, 570);
INSERT INTO `os_patent_agent_link` VALUES (11458, 23748, 568);
INSERT INTO `os_patent_agent_link` VALUES (11459, 23748, 578);
INSERT INTO `os_patent_agent_link` VALUES (11460, 23749, 570);
INSERT INTO `os_patent_agent_link` VALUES (11461, 23750, 585);
INSERT INTO `os_patent_agent_link` VALUES (11462, 23751, 568);
INSERT INTO `os_patent_agent_link` VALUES (11463, 23751, 581);
INSERT INTO `os_patent_agent_link` VALUES (11464, 23752, 570);
INSERT INTO `os_patent_agent_link` VALUES (11465, 23753, 570);
INSERT INTO `os_patent_agent_link` VALUES (11466, 23754, 570);
INSERT INTO `os_patent_agent_link` VALUES (11467, 23755, 586);
INSERT INTO `os_patent_agent_link` VALUES (11468, 23756, 584);
INSERT INTO `os_patent_agent_link` VALUES (11469, 23757, 568);
INSERT INTO `os_patent_agent_link` VALUES (11470, 23757, 578);
INSERT INTO `os_patent_agent_link` VALUES (11471, 23758, 584);
INSERT INTO `os_patent_agent_link` VALUES (11472, 23759, 587);
INSERT INTO `os_patent_agent_link` VALUES (11473, 23760, 584);
INSERT INTO `os_patent_agent_link` VALUES (11474, 23761, 588);
INSERT INTO `os_patent_agent_link` VALUES (11475, 23762, 589);
INSERT INTO `os_patent_agent_link` VALUES (11476, 23763, 588);
INSERT INTO `os_patent_agent_link` VALUES (11477, 23764, 590);
INSERT INTO `os_patent_agent_link` VALUES (11478, 23765, 588);
INSERT INTO `os_patent_agent_link` VALUES (11479, 23766, 587);
INSERT INTO `os_patent_agent_link` VALUES (11480, 23767, 590);
INSERT INTO `os_patent_agent_link` VALUES (11481, 23768, 588);
INSERT INTO `os_patent_agent_link` VALUES (11482, 23769, 591);
INSERT INTO `os_patent_agent_link` VALUES (11483, 23770, 590);
INSERT INTO `os_patent_agent_link` VALUES (11484, 23771, 588);
INSERT INTO `os_patent_agent_link` VALUES (11485, 23772, 591);
INSERT INTO `os_patent_agent_link` VALUES (11486, 23773, 587);
INSERT INTO `os_patent_agent_link` VALUES (11487, 23774, 592);
INSERT INTO `os_patent_agent_link` VALUES (11488, 23775, 587);
INSERT INTO `os_patent_agent_link` VALUES (11489, 23776, 588);
INSERT INTO `os_patent_agent_link` VALUES (11490, 23777, 590);
INSERT INTO `os_patent_agent_link` VALUES (11491, 23778, 590);
INSERT INTO `os_patent_agent_link` VALUES (11492, 23779, 590);
INSERT INTO `os_patent_agent_link` VALUES (11493, 23780, 591);
INSERT INTO `os_patent_agent_link` VALUES (11494, 23781, 588);
INSERT INTO `os_patent_agent_link` VALUES (11495, 23782, 591);
INSERT INTO `os_patent_agent_link` VALUES (11496, 23783, 588);
INSERT INTO `os_patent_agent_link` VALUES (11497, 23784, 588);
INSERT INTO `os_patent_agent_link` VALUES (11498, 23785, 593);
INSERT INTO `os_patent_agent_link` VALUES (11499, 23786, 594);
INSERT INTO `os_patent_agent_link` VALUES (11500, 23787, 595);
INSERT INTO `os_patent_agent_link` VALUES (11501, 23788, 593);
INSERT INTO `os_patent_agent_link` VALUES (11502, 23789, 592);
INSERT INTO `os_patent_agent_link` VALUES (11503, 23790, 590);
INSERT INTO `os_patent_agent_link` VALUES (11504, 23791, 588);
INSERT INTO `os_patent_agent_link` VALUES (11505, 23792, 593);
INSERT INTO `os_patent_agent_link` VALUES (11506, 23793, 590);
INSERT INTO `os_patent_agent_link` VALUES (11507, 23794, 588);
INSERT INTO `os_patent_agent_link` VALUES (11508, 23795, 591);
INSERT INTO `os_patent_agent_link` VALUES (11509, 23796, 592);
INSERT INTO `os_patent_agent_link` VALUES (11510, 23797, 596);
INSERT INTO `os_patent_agent_link` VALUES (11511, 23798, 588);
INSERT INTO `os_patent_agent_link` VALUES (11512, 23799, 596);
INSERT INTO `os_patent_agent_link` VALUES (11513, 23800, 591);
INSERT INTO `os_patent_agent_link` VALUES (11514, 23801, 592);
INSERT INTO `os_patent_agent_link` VALUES (11515, 23802, 588);
INSERT INTO `os_patent_agent_link` VALUES (11516, 23803, 591);
INSERT INTO `os_patent_agent_link` VALUES (11517, 23804, 594);
INSERT INTO `os_patent_agent_link` VALUES (11518, 23805, 591);
INSERT INTO `os_patent_agent_link` VALUES (11519, 23806, 595);
INSERT INTO `os_patent_agent_link` VALUES (11520, 23807, 596);
INSERT INTO `os_patent_agent_link` VALUES (11521, 23808, 591);
INSERT INTO `os_patent_agent_link` VALUES (11522, 23809, 594);
INSERT INTO `os_patent_agent_link` VALUES (11523, 23810, 594);
INSERT INTO `os_patent_agent_link` VALUES (11524, 23811, 591);
INSERT INTO `os_patent_agent_link` VALUES (11525, 23812, 591);
INSERT INTO `os_patent_agent_link` VALUES (11526, 23813, 597);
INSERT INTO `os_patent_agent_link` VALUES (11527, 23814, 591);
INSERT INTO `os_patent_agent_link` VALUES (11528, 23815, 591);
INSERT INTO `os_patent_agent_link` VALUES (11529, 23816, 597);
INSERT INTO `os_patent_agent_link` VALUES (11530, 23817, 591);
INSERT INTO `os_patent_agent_link` VALUES (11531, 23818, 593);
INSERT INTO `os_patent_agent_link` VALUES (11532, 23819, 596);
INSERT INTO `os_patent_agent_link` VALUES (11533, 23820, 590);
INSERT INTO `os_patent_agent_link` VALUES (11534, 23821, 597);
INSERT INTO `os_patent_agent_link` VALUES (11535, 23822, 592);
INSERT INTO `os_patent_agent_link` VALUES (11536, 23823, 588);
INSERT INTO `os_patent_agent_link` VALUES (11537, 23824, 595);
INSERT INTO `os_patent_agent_link` VALUES (11538, 23825, 594);
INSERT INTO `os_patent_agent_link` VALUES (11539, 23826, 590);
INSERT INTO `os_patent_agent_link` VALUES (11540, 23827, 594);
INSERT INTO `os_patent_agent_link` VALUES (11541, 23828, 594);
INSERT INTO `os_patent_agent_link` VALUES (11542, 23829, 590);
INSERT INTO `os_patent_agent_link` VALUES (11543, 23830, 590);
INSERT INTO `os_patent_agent_link` VALUES (11544, 23831, 591);
INSERT INTO `os_patent_agent_link` VALUES (11545, 23832, 588);
INSERT INTO `os_patent_agent_link` VALUES (11546, 23833, 590);
INSERT INTO `os_patent_agent_link` VALUES (11547, 23834, 597);
INSERT INTO `os_patent_agent_link` VALUES (11548, 23835, 590);
INSERT INTO `os_patent_agent_link` VALUES (11549, 23836, 595);
INSERT INTO `os_patent_agent_link` VALUES (11550, 23837, 590);
INSERT INTO `os_patent_agent_link` VALUES (11551, 23838, 597);
INSERT INTO `os_patent_agent_link` VALUES (11552, 23839, 597);
INSERT INTO `os_patent_agent_link` VALUES (11553, 23840, 592);
INSERT INTO `os_patent_agent_link` VALUES (11554, 23841, 592);
INSERT INTO `os_patent_agent_link` VALUES (11555, 23842, 588);
INSERT INTO `os_patent_agent_link` VALUES (11556, 23843, 594);
INSERT INTO `os_patent_agent_link` VALUES (11557, 23844, 594);
INSERT INTO `os_patent_agent_link` VALUES (11558, 23845, 592);
INSERT INTO `os_patent_agent_link` VALUES (11559, 23846, 592);
INSERT INTO `os_patent_agent_link` VALUES (11560, 23847, 588);
INSERT INTO `os_patent_agent_link` VALUES (11561, 23848, 591);
INSERT INTO `os_patent_agent_link` VALUES (11562, 23849, 597);
INSERT INTO `os_patent_agent_link` VALUES (11563, 23850, 597);
INSERT INTO `os_patent_agent_link` VALUES (11564, 23851, 594);
INSERT INTO `os_patent_agent_link` VALUES (11565, 23852, 596);
INSERT INTO `os_patent_agent_link` VALUES (11566, 23853, 596);
INSERT INTO `os_patent_agent_link` VALUES (11567, 23854, 594);
INSERT INTO `os_patent_agent_link` VALUES (11568, 23855, 594);
INSERT INTO `os_patent_agent_link` VALUES (11569, 23856, 594);
INSERT INTO `os_patent_agent_link` VALUES (11570, 23857, 594);
INSERT INTO `os_patent_agent_link` VALUES (11571, 23858, 594);
INSERT INTO `os_patent_agent_link` VALUES (11572, 23859, 595);
INSERT INTO `os_patent_agent_link` VALUES (11573, 23860, 594);
INSERT INTO `os_patent_agent_link` VALUES (11574, 23861, 591);
INSERT INTO `os_patent_agent_link` VALUES (11575, 23862, 595);
INSERT INTO `os_patent_agent_link` VALUES (11576, 23863, 591);
INSERT INTO `os_patent_agent_link` VALUES (11577, 23864, 597);
INSERT INTO `os_patent_agent_link` VALUES (11578, 23865, 591);
INSERT INTO `os_patent_agent_link` VALUES (11579, 23866, 591);
INSERT INTO `os_patent_agent_link` VALUES (11580, 23867, 591);
INSERT INTO `os_patent_agent_link` VALUES (11581, 23868, 590);
INSERT INTO `os_patent_agent_link` VALUES (11582, 23869, 592);
INSERT INTO `os_patent_agent_link` VALUES (11583, 23870, 592);
INSERT INTO `os_patent_agent_link` VALUES (11584, 23871, 590);
INSERT INTO `os_patent_agent_link` VALUES (11585, 23872, 590);
INSERT INTO `os_patent_agent_link` VALUES (11586, 23873, 592);
INSERT INTO `os_patent_agent_link` VALUES (11587, 23874, 592);
INSERT INTO `os_patent_agent_link` VALUES (11588, 23875, 595);
INSERT INTO `os_patent_agent_link` VALUES (11589, 23876, 595);
INSERT INTO `os_patent_agent_link` VALUES (11590, 23877, 595);
INSERT INTO `os_patent_agent_link` VALUES (11591, 23878, 595);
INSERT INTO `os_patent_agent_link` VALUES (11592, 23879, 598);
INSERT INTO `os_patent_agent_link` VALUES (11593, 23880, 598);
INSERT INTO `os_patent_agent_link` VALUES (11594, 23881, 590);
INSERT INTO `os_patent_agent_link` VALUES (11595, 23882, 592);
INSERT INTO `os_patent_agent_link` VALUES (11596, 23883, 588);
INSERT INTO `os_patent_agent_link` VALUES (11597, 23884, 595);
INSERT INTO `os_patent_agent_link` VALUES (11598, 23885, 599);
INSERT INTO `os_patent_agent_link` VALUES (11599, 23886, 592);
INSERT INTO `os_patent_agent_link` VALUES (11600, 23887, 599);
INSERT INTO `os_patent_agent_link` VALUES (11601, 23888, 588);
INSERT INTO `os_patent_agent_link` VALUES (11602, 23889, 595);
INSERT INTO `os_patent_agent_link` VALUES (11603, 23890, 595);
INSERT INTO `os_patent_agent_link` VALUES (11604, 23891, 590);
INSERT INTO `os_patent_agent_link` VALUES (11605, 23892, 593);
INSERT INTO `os_patent_agent_link` VALUES (11606, 23893, 592);
INSERT INTO `os_patent_agent_link` VALUES (11607, 23894, 598);
INSERT INTO `os_patent_agent_link` VALUES (11608, 23895, 599);
INSERT INTO `os_patent_agent_link` VALUES (11609, 23896, 599);
INSERT INTO `os_patent_agent_link` VALUES (11610, 23897, 599);
INSERT INTO `os_patent_agent_link` VALUES (11611, 23898, 590);
INSERT INTO `os_patent_agent_link` VALUES (11612, 23899, 592);
INSERT INTO `os_patent_agent_link` VALUES (11613, 23900, 600);
INSERT INTO `os_patent_agent_link` VALUES (11614, 23901, 594);
INSERT INTO `os_patent_agent_link` VALUES (11615, 23902, 585);
INSERT INTO `os_patent_agent_link` VALUES (11616, 23903, 596);
INSERT INTO `os_patent_agent_link` VALUES (11617, 23904, 585);
INSERT INTO `os_patent_agent_link` VALUES (11618, 23905, 591);
INSERT INTO `os_patent_agent_link` VALUES (11619, 23906, 585);
INSERT INTO `os_patent_agent_link` VALUES (11620, 23907, 594);
INSERT INTO `os_patent_agent_link` VALUES (11621, 23908, 600);
INSERT INTO `os_patent_agent_link` VALUES (11622, 23909, 594);
INSERT INTO `os_patent_agent_link` VALUES (11623, 23910, 594);
INSERT INTO `os_patent_agent_link` VALUES (11624, 23911, 593);
INSERT INTO `os_patent_agent_link` VALUES (11625, 23912, 598);
INSERT INTO `os_patent_agent_link` VALUES (11626, 23913, 601);
INSERT INTO `os_patent_agent_link` VALUES (11627, 23914, 596);
INSERT INTO `os_patent_agent_link` VALUES (11628, 23915, 602);
INSERT INTO `os_patent_agent_link` VALUES (11629, 23916, 591);
INSERT INTO `os_patent_agent_link` VALUES (11630, 23917, 595);
INSERT INTO `os_patent_agent_link` VALUES (11631, 23918, 592);
INSERT INTO `os_patent_agent_link` VALUES (11632, 23919, 595);
INSERT INTO `os_patent_agent_link` VALUES (11633, 23920, 603);
INSERT INTO `os_patent_agent_link` VALUES (11634, 23921, 595);
INSERT INTO `os_patent_agent_link` VALUES (11635, 23922, 592);
INSERT INTO `os_patent_agent_link` VALUES (11636, 23923, 595);
INSERT INTO `os_patent_agent_link` VALUES (11637, 23924, 592);
INSERT INTO `os_patent_agent_link` VALUES (11638, 23925, 592);
INSERT INTO `os_patent_agent_link` VALUES (11639, 23926, 604);
INSERT INTO `os_patent_agent_link` VALUES (11640, 23927, 588);
INSERT INTO `os_patent_agent_link` VALUES (11641, 23928, 588);
INSERT INTO `os_patent_agent_link` VALUES (11642, 23929, 588);
INSERT INTO `os_patent_agent_link` VALUES (11643, 23930, 598);
INSERT INTO `os_patent_agent_link` VALUES (11644, 23931, 588);
INSERT INTO `os_patent_agent_link` VALUES (11645, 23932, 588);
INSERT INTO `os_patent_agent_link` VALUES (11646, 23933, 588);
INSERT INTO `os_patent_agent_link` VALUES (11647, 23934, 588);
INSERT INTO `os_patent_agent_link` VALUES (11648, 23935, 588);
INSERT INTO `os_patent_agent_link` VALUES (11649, 23936, 605);
INSERT INTO `os_patent_agent_link` VALUES (11650, 23937, 605);
INSERT INTO `os_patent_agent_link` VALUES (11651, 23938, 605);
INSERT INTO `os_patent_agent_link` VALUES (11652, 23939, 606);
INSERT INTO `os_patent_agent_link` VALUES (11653, 23940, 588);
INSERT INTO `os_patent_agent_link` VALUES (11654, 23941, 600);
INSERT INTO `os_patent_agent_link` VALUES (11655, 23942, 605);
INSERT INTO `os_patent_agent_link` VALUES (11656, 23943, 596);
INSERT INTO `os_patent_agent_link` VALUES (11657, 23944, 607);
INSERT INTO `os_patent_agent_link` VALUES (11658, 23945, 596);
INSERT INTO `os_patent_agent_link` VALUES (11659, 23946, 600);
INSERT INTO `os_patent_agent_link` VALUES (11660, 23947, 600);
INSERT INTO `os_patent_agent_link` VALUES (11661, 23948, 600);
INSERT INTO `os_patent_agent_link` VALUES (11662, 23949, 600);
INSERT INTO `os_patent_agent_link` VALUES (11663, 23950, 592);
INSERT INTO `os_patent_agent_link` VALUES (11664, 23951, 595);
INSERT INTO `os_patent_agent_link` VALUES (11665, 23952, 592);
INSERT INTO `os_patent_agent_link` VALUES (11666, 23953, 592);
INSERT INTO `os_patent_agent_link` VALUES (11667, 23954, 596);
INSERT INTO `os_patent_agent_link` VALUES (11668, 23955, 592);
INSERT INTO `os_patent_agent_link` VALUES (11669, 23956, 596);
INSERT INTO `os_patent_agent_link` VALUES (11670, 23957, 602);
INSERT INTO `os_patent_agent_link` VALUES (11671, 23958, 605);
INSERT INTO `os_patent_agent_link` VALUES (11672, 23959, 592);
INSERT INTO `os_patent_agent_link` VALUES (11673, 23960, 592);
INSERT INTO `os_patent_agent_link` VALUES (11674, 23961, 604);
INSERT INTO `os_patent_agent_link` VALUES (11675, 23962, 588);
INSERT INTO `os_patent_agent_link` VALUES (11676, 23963, 605);
INSERT INTO `os_patent_agent_link` VALUES (11677, 23964, 592);
INSERT INTO `os_patent_agent_link` VALUES (11678, 23965, 592);
INSERT INTO `os_patent_agent_link` VALUES (11679, 23966, 592);
INSERT INTO `os_patent_agent_link` VALUES (11680, 23967, 605);
INSERT INTO `os_patent_agent_link` VALUES (11681, 23968, 592);
INSERT INTO `os_patent_agent_link` VALUES (11682, 23969, 592);
INSERT INTO `os_patent_agent_link` VALUES (11683, 23970, 595);
INSERT INTO `os_patent_agent_link` VALUES (11684, 23971, 588);
INSERT INTO `os_patent_agent_link` VALUES (11685, 23972, 592);
INSERT INTO `os_patent_agent_link` VALUES (11686, 23973, 588);
INSERT INTO `os_patent_agent_link` VALUES (11687, 23974, 592);
INSERT INTO `os_patent_agent_link` VALUES (11688, 23975, 592);
INSERT INTO `os_patent_agent_link` VALUES (11689, 23976, 592);
INSERT INTO `os_patent_agent_link` VALUES (11690, 23977, 599);
INSERT INTO `os_patent_agent_link` VALUES (11691, 23978, 593);
INSERT INTO `os_patent_agent_link` VALUES (11692, 23979, 592);
INSERT INTO `os_patent_agent_link` VALUES (11693, 23980, 592);
INSERT INTO `os_patent_agent_link` VALUES (11694, 23981, 605);
INSERT INTO `os_patent_agent_link` VALUES (11695, 23982, 600);
INSERT INTO `os_patent_agent_link` VALUES (11696, 23983, 606);
INSERT INTO `os_patent_agent_link` VALUES (11697, 23984, 588);
INSERT INTO `os_patent_agent_link` VALUES (11698, 23985, 592);
INSERT INTO `os_patent_agent_link` VALUES (11699, 23986, 605);
INSERT INTO `os_patent_agent_link` VALUES (11700, 23987, 592);
INSERT INTO `os_patent_agent_link` VALUES (11701, 23988, 605);
INSERT INTO `os_patent_agent_link` VALUES (11702, 23989, 608);
INSERT INTO `os_patent_agent_link` VALUES (11703, 23990, 596);
INSERT INTO `os_patent_agent_link` VALUES (11704, 23991, 608);
INSERT INTO `os_patent_agent_link` VALUES (11705, 23992, 606);
INSERT INTO `os_patent_agent_link` VALUES (11706, 23993, 592);
INSERT INTO `os_patent_agent_link` VALUES (11707, 23994, 594);
INSERT INTO `os_patent_agent_link` VALUES (11708, 23995, 599);
INSERT INTO `os_patent_agent_link` VALUES (11709, 23996, 609);
INSERT INTO `os_patent_agent_link` VALUES (11710, 23997, 591);
INSERT INTO `os_patent_agent_link` VALUES (11711, 23998, 596);
INSERT INTO `os_patent_agent_link` VALUES (11712, 23999, 599);
INSERT INTO `os_patent_agent_link` VALUES (11713, 24000, 604);
INSERT INTO `os_patent_agent_link` VALUES (11714, 24001, 592);
INSERT INTO `os_patent_agent_link` VALUES (11715, 24002, 604);
INSERT INTO `os_patent_agent_link` VALUES (11716, 24003, 592);
INSERT INTO `os_patent_agent_link` VALUES (11717, 24004, 591);
INSERT INTO `os_patent_agent_link` VALUES (11718, 24005, 609);
INSERT INTO `os_patent_agent_link` VALUES (11719, 24006, 595);
INSERT INTO `os_patent_agent_link` VALUES (11720, 24007, 602);
INSERT INTO `os_patent_agent_link` VALUES (11721, 24008, 591);
INSERT INTO `os_patent_agent_link` VALUES (11722, 24009, 601);
INSERT INTO `os_patent_agent_link` VALUES (11723, 24010, 604);
INSERT INTO `os_patent_agent_link` VALUES (11724, 24011, 604);
INSERT INTO `os_patent_agent_link` VALUES (11725, 24012, 601);
INSERT INTO `os_patent_agent_link` VALUES (11726, 24013, 610);
INSERT INTO `os_patent_agent_link` VALUES (11727, 24014, 591);
INSERT INTO `os_patent_agent_link` VALUES (11728, 24015, 610);
INSERT INTO `os_patent_agent_link` VALUES (11729, 24016, 610);
INSERT INTO `os_patent_agent_link` VALUES (11730, 24017, 596);
INSERT INTO `os_patent_agent_link` VALUES (11731, 24018, 593);
INSERT INTO `os_patent_agent_link` VALUES (11732, 24019, 610);
INSERT INTO `os_patent_agent_link` VALUES (11733, 24020, 594);
INSERT INTO `os_patent_agent_link` VALUES (11734, 24021, 594);
INSERT INTO `os_patent_agent_link` VALUES (11735, 24022, 596);
INSERT INTO `os_patent_agent_link` VALUES (11736, 24023, 594);
INSERT INTO `os_patent_agent_link` VALUES (11737, 24024, 594);
INSERT INTO `os_patent_agent_link` VALUES (11738, 24025, 591);
INSERT INTO `os_patent_agent_link` VALUES (11739, 24026, 584);
INSERT INTO `os_patent_agent_link` VALUES (11740, 24027, 584);
INSERT INTO `os_patent_agent_link` VALUES (11741, 24028, 601);
INSERT INTO `os_patent_agent_link` VALUES (11742, 24029, 601);
INSERT INTO `os_patent_agent_link` VALUES (11743, 24030, 601);
INSERT INTO `os_patent_agent_link` VALUES (11744, 24031, 601);
INSERT INTO `os_patent_agent_link` VALUES (11745, 24032, 611);
INSERT INTO `os_patent_agent_link` VALUES (11746, 24033, 594);
INSERT INTO `os_patent_agent_link` VALUES (11747, 24034, 595);
INSERT INTO `os_patent_agent_link` VALUES (11748, 24035, 594);
INSERT INTO `os_patent_agent_link` VALUES (11749, 24036, 594);
INSERT INTO `os_patent_agent_link` VALUES (11750, 24037, 612);
INSERT INTO `os_patent_agent_link` VALUES (11751, 24038, 594);
INSERT INTO `os_patent_agent_link` VALUES (11752, 24039, 594);
INSERT INTO `os_patent_agent_link` VALUES (11753, 24040, 584);
INSERT INTO `os_patent_agent_link` VALUES (11754, 24041, 591);
INSERT INTO `os_patent_agent_link` VALUES (11755, 24042, 584);
INSERT INTO `os_patent_agent_link` VALUES (11756, 24043, 584);
INSERT INTO `os_patent_agent_link` VALUES (11757, 24044, 584);
INSERT INTO `os_patent_agent_link` VALUES (11758, 24045, 613);
INSERT INTO `os_patent_agent_link` VALUES (11759, 24046, 584);
INSERT INTO `os_patent_agent_link` VALUES (11760, 24047, 584);
INSERT INTO `os_patent_agent_link` VALUES (11761, 24048, 613);
INSERT INTO `os_patent_agent_link` VALUES (11762, 24049, 614);
INSERT INTO `os_patent_agent_link` VALUES (11763, 24050, 614);
INSERT INTO `os_patent_agent_link` VALUES (11764, 24051, 614);
INSERT INTO `os_patent_agent_link` VALUES (11765, 24052, 615);
INSERT INTO `os_patent_agent_link` VALUES (11766, 24053, 616);
INSERT INTO `os_patent_agent_link` VALUES (11767, 24054, 570);
INSERT INTO `os_patent_agent_link` VALUES (11768, 24055, 570);
INSERT INTO `os_patent_agent_link` VALUES (11769, 24056, 570);
INSERT INTO `os_patent_agent_link` VALUES (11770, 24057, 570);
INSERT INTO `os_patent_agent_link` VALUES (11771, 24058, 570);
INSERT INTO `os_patent_agent_link` VALUES (11772, 24059, 588);
INSERT INTO `os_patent_agent_link` VALUES (11773, 24060, 591);
INSERT INTO `os_patent_agent_link` VALUES (11774, 24061, 591);
INSERT INTO `os_patent_agent_link` VALUES (11775, 24062, 595);
INSERT INTO `os_patent_agent_link` VALUES (11776, 24063, 592);
INSERT INTO `os_patent_agent_link` VALUES (11777, 24064, 592);
INSERT INTO `os_patent_agent_link` VALUES (13802, 22745, 493);
INSERT INTO `os_patent_agent_link` VALUES (13803, 22748, 493);
INSERT INTO `os_patent_agent_link` VALUES (13804, 22749, 493);
INSERT INTO `os_patent_agent_link` VALUES (13805, 22752, 493);
INSERT INTO `os_patent_agent_link` VALUES (13806, 22754, 494);
INSERT INTO `os_patent_agent_link` VALUES (13807, 22756, 495);
INSERT INTO `os_patent_agent_link` VALUES (13808, 22758, 495);
INSERT INTO `os_patent_agent_link` VALUES (13809, 22760, 495);
INSERT INTO `os_patent_agent_link` VALUES (13810, 22761, 495);
INSERT INTO `os_patent_agent_link` VALUES (13811, 22762, 493);
INSERT INTO `os_patent_agent_link` VALUES (13812, 22766, 495);
INSERT INTO `os_patent_agent_link` VALUES (13813, 22767, 495);
INSERT INTO `os_patent_agent_link` VALUES (13814, 22768, 495);
INSERT INTO `os_patent_agent_link` VALUES (13815, 22769, 495);
INSERT INTO `os_patent_agent_link` VALUES (13816, 22770, 493);
INSERT INTO `os_patent_agent_link` VALUES (13817, 22772, 493);
INSERT INTO `os_patent_agent_link` VALUES (13818, 22773, 496);
INSERT INTO `os_patent_agent_link` VALUES (13819, 22773, 497);
INSERT INTO `os_patent_agent_link` VALUES (13820, 22773, 498);
INSERT INTO `os_patent_agent_link` VALUES (13821, 22776, 496);
INSERT INTO `os_patent_agent_link` VALUES (13822, 22776, 497);
INSERT INTO `os_patent_agent_link` VALUES (13823, 22776, 498);
INSERT INTO `os_patent_agent_link` VALUES (13824, 22778, 495);
INSERT INTO `os_patent_agent_link` VALUES (13825, 22779, 495);
INSERT INTO `os_patent_agent_link` VALUES (13826, 22780, 499);
INSERT INTO `os_patent_agent_link` VALUES (13827, 22782, 493);
INSERT INTO `os_patent_agent_link` VALUES (13828, 22783, 495);
INSERT INTO `os_patent_agent_link` VALUES (13829, 22784, 495);
INSERT INTO `os_patent_agent_link` VALUES (13830, 22784, 500);
INSERT INTO `os_patent_agent_link` VALUES (13831, 22785, 495);
INSERT INTO `os_patent_agent_link` VALUES (13832, 22787, 496);
INSERT INTO `os_patent_agent_link` VALUES (13833, 22787, 497);
INSERT INTO `os_patent_agent_link` VALUES (13834, 22787, 498);
INSERT INTO `os_patent_agent_link` VALUES (13835, 22788, 496);
INSERT INTO `os_patent_agent_link` VALUES (13836, 22788, 497);
INSERT INTO `os_patent_agent_link` VALUES (13837, 22788, 498);
INSERT INTO `os_patent_agent_link` VALUES (13838, 22789, 496);
INSERT INTO `os_patent_agent_link` VALUES (13839, 22789, 497);
INSERT INTO `os_patent_agent_link` VALUES (13840, 22789, 498);
INSERT INTO `os_patent_agent_link` VALUES (13841, 22791, 501);
INSERT INTO `os_patent_agent_link` VALUES (13842, 22794, 502);
INSERT INTO `os_patent_agent_link` VALUES (13843, 22798, 495);
INSERT INTO `os_patent_agent_link` VALUES (13844, 22800, 493);
INSERT INTO `os_patent_agent_link` VALUES (13845, 22802, 493);
INSERT INTO `os_patent_agent_link` VALUES (13846, 22804, 495);
INSERT INTO `os_patent_agent_link` VALUES (13847, 22805, 503);
INSERT INTO `os_patent_agent_link` VALUES (13848, 22806, 496);
INSERT INTO `os_patent_agent_link` VALUES (13849, 22806, 497);
INSERT INTO `os_patent_agent_link` VALUES (13850, 22806, 498);
INSERT INTO `os_patent_agent_link` VALUES (13851, 22807, 496);
INSERT INTO `os_patent_agent_link` VALUES (13852, 22807, 497);
INSERT INTO `os_patent_agent_link` VALUES (13853, 22807, 498);
INSERT INTO `os_patent_agent_link` VALUES (13854, 22810, 499);
INSERT INTO `os_patent_agent_link` VALUES (13855, 22811, 495);
INSERT INTO `os_patent_agent_link` VALUES (13856, 22813, 495);
INSERT INTO `os_patent_agent_link` VALUES (13857, 22816, 493);
INSERT INTO `os_patent_agent_link` VALUES (13858, 22817, 496);
INSERT INTO `os_patent_agent_link` VALUES (13859, 22817, 497);
INSERT INTO `os_patent_agent_link` VALUES (13860, 22817, 498);
INSERT INTO `os_patent_agent_link` VALUES (13861, 22821, 503);
INSERT INTO `os_patent_agent_link` VALUES (13862, 22824, 496);
INSERT INTO `os_patent_agent_link` VALUES (13863, 22824, 497);
INSERT INTO `os_patent_agent_link` VALUES (13864, 22824, 498);
INSERT INTO `os_patent_agent_link` VALUES (13865, 22825, 495);
INSERT INTO `os_patent_agent_link` VALUES (13866, 22829, 504);
INSERT INTO `os_patent_agent_link` VALUES (13867, 22830, 495);
INSERT INTO `os_patent_agent_link` VALUES (13868, 22831, 496);
INSERT INTO `os_patent_agent_link` VALUES (13869, 22831, 497);
INSERT INTO `os_patent_agent_link` VALUES (13870, 22831, 498);
INSERT INTO `os_patent_agent_link` VALUES (13871, 22833, 501);
INSERT INTO `os_patent_agent_link` VALUES (13872, 22833, 505);
INSERT INTO `os_patent_agent_link` VALUES (13873, 22838, 496);
INSERT INTO `os_patent_agent_link` VALUES (13874, 22838, 497);
INSERT INTO `os_patent_agent_link` VALUES (13875, 22838, 498);
INSERT INTO `os_patent_agent_link` VALUES (13876, 22839, 496);
INSERT INTO `os_patent_agent_link` VALUES (13877, 22839, 497);
INSERT INTO `os_patent_agent_link` VALUES (13878, 22839, 498);
INSERT INTO `os_patent_agent_link` VALUES (13879, 22841, 499);
INSERT INTO `os_patent_agent_link` VALUES (13880, 22842, 495);
INSERT INTO `os_patent_agent_link` VALUES (13881, 22843, 495);
INSERT INTO `os_patent_agent_link` VALUES (13882, 22844, 495);
INSERT INTO `os_patent_agent_link` VALUES (13883, 22846, 495);
INSERT INTO `os_patent_agent_link` VALUES (13884, 22848, 495);
INSERT INTO `os_patent_agent_link` VALUES (13885, 22849, 493);
INSERT INTO `os_patent_agent_link` VALUES (13886, 22853, 495);
INSERT INTO `os_patent_agent_link` VALUES (13887, 22853, 500);
INSERT INTO `os_patent_agent_link` VALUES (13888, 22855, 496);
INSERT INTO `os_patent_agent_link` VALUES (13889, 22855, 497);
INSERT INTO `os_patent_agent_link` VALUES (13890, 22855, 498);
INSERT INTO `os_patent_agent_link` VALUES (13891, 22856, 496);
INSERT INTO `os_patent_agent_link` VALUES (13892, 22856, 497);
INSERT INTO `os_patent_agent_link` VALUES (13893, 22856, 498);
INSERT INTO `os_patent_agent_link` VALUES (13894, 22857, 495);
INSERT INTO `os_patent_agent_link` VALUES (13895, 22858, 496);
INSERT INTO `os_patent_agent_link` VALUES (13896, 22858, 497);
INSERT INTO `os_patent_agent_link` VALUES (13897, 22858, 498);
INSERT INTO `os_patent_agent_link` VALUES (13898, 22859, 496);
INSERT INTO `os_patent_agent_link` VALUES (13899, 22859, 497);
INSERT INTO `os_patent_agent_link` VALUES (13900, 22859, 498);
INSERT INTO `os_patent_agent_link` VALUES (13901, 22860, 506);
INSERT INTO `os_patent_agent_link` VALUES (13902, 22860, 507);
INSERT INTO `os_patent_agent_link` VALUES (13903, 22863, 495);
INSERT INTO `os_patent_agent_link` VALUES (13904, 22866, 495);
INSERT INTO `os_patent_agent_link` VALUES (13905, 22867, 495);
INSERT INTO `os_patent_agent_link` VALUES (13906, 22870, 496);
INSERT INTO `os_patent_agent_link` VALUES (13907, 22870, 497);
INSERT INTO `os_patent_agent_link` VALUES (13908, 22870, 498);
INSERT INTO `os_patent_agent_link` VALUES (13909, 22871, 508);
INSERT INTO `os_patent_agent_link` VALUES (13910, 22871, 509);
INSERT INTO `os_patent_agent_link` VALUES (13911, 22871, 510);
INSERT INTO `os_patent_agent_link` VALUES (13912, 22875, 495);
INSERT INTO `os_patent_agent_link` VALUES (13913, 22876, 496);
INSERT INTO `os_patent_agent_link` VALUES (13914, 22876, 497);
INSERT INTO `os_patent_agent_link` VALUES (13915, 22876, 498);
INSERT INTO `os_patent_agent_link` VALUES (13916, 22878, 496);
INSERT INTO `os_patent_agent_link` VALUES (13917, 22878, 497);
INSERT INTO `os_patent_agent_link` VALUES (13918, 22878, 498);
INSERT INTO `os_patent_agent_link` VALUES (13919, 22882, 495);
INSERT INTO `os_patent_agent_link` VALUES (13920, 22885, 495);
INSERT INTO `os_patent_agent_link` VALUES (13921, 22887, 495);
INSERT INTO `os_patent_agent_link` VALUES (13922, 22889, 496);
INSERT INTO `os_patent_agent_link` VALUES (13923, 22889, 497);
INSERT INTO `os_patent_agent_link` VALUES (13924, 22889, 498);
INSERT INTO `os_patent_agent_link` VALUES (13925, 22891, 495);
INSERT INTO `os_patent_agent_link` VALUES (13926, 22891, 500);
INSERT INTO `os_patent_agent_link` VALUES (13927, 22892, 495);
INSERT INTO `os_patent_agent_link` VALUES (13928, 22893, 495);
INSERT INTO `os_patent_agent_link` VALUES (13929, 22894, 495);
INSERT INTO `os_patent_agent_link` VALUES (13930, 22895, 511);
INSERT INTO `os_patent_agent_link` VALUES (13931, 22896, 495);
INSERT INTO `os_patent_agent_link` VALUES (13932, 22899, 506);
INSERT INTO `os_patent_agent_link` VALUES (13933, 22900, 496);
INSERT INTO `os_patent_agent_link` VALUES (13934, 22900, 497);
INSERT INTO `os_patent_agent_link` VALUES (13935, 22900, 498);
INSERT INTO `os_patent_agent_link` VALUES (13936, 22901, 495);
INSERT INTO `os_patent_agent_link` VALUES (13937, 22902, 495);
INSERT INTO `os_patent_agent_link` VALUES (13938, 22903, 495);
INSERT INTO `os_patent_agent_link` VALUES (13939, 22904, 511);
INSERT INTO `os_patent_agent_link` VALUES (13940, 22906, 495);
INSERT INTO `os_patent_agent_link` VALUES (13941, 22906, 500);
INSERT INTO `os_patent_agent_link` VALUES (13942, 22907, 495);
INSERT INTO `os_patent_agent_link` VALUES (13943, 22908, 495);
INSERT INTO `os_patent_agent_link` VALUES (13944, 22909, 495);
INSERT INTO `os_patent_agent_link` VALUES (13945, 22910, 495);
INSERT INTO `os_patent_agent_link` VALUES (13946, 22913, 495);
INSERT INTO `os_patent_agent_link` VALUES (13947, 22914, 495);
INSERT INTO `os_patent_agent_link` VALUES (13948, 22915, 495);
INSERT INTO `os_patent_agent_link` VALUES (13949, 22919, 495);
INSERT INTO `os_patent_agent_link` VALUES (13950, 22921, 495);
INSERT INTO `os_patent_agent_link` VALUES (13951, 22923, 495);
INSERT INTO `os_patent_agent_link` VALUES (13952, 22924, 495);
INSERT INTO `os_patent_agent_link` VALUES (13953, 22926, 495);
INSERT INTO `os_patent_agent_link` VALUES (13954, 22930, 495);
INSERT INTO `os_patent_agent_link` VALUES (13955, 22934, 496);
INSERT INTO `os_patent_agent_link` VALUES (13956, 22934, 497);
INSERT INTO `os_patent_agent_link` VALUES (13957, 22934, 498);
INSERT INTO `os_patent_agent_link` VALUES (13958, 22936, 512);
INSERT INTO `os_patent_agent_link` VALUES (13959, 22940, 513);
INSERT INTO `os_patent_agent_link` VALUES (13960, 22941, 495);
INSERT INTO `os_patent_agent_link` VALUES (13961, 22945, 513);
INSERT INTO `os_patent_agent_link` VALUES (13962, 22954, 496);
INSERT INTO `os_patent_agent_link` VALUES (13963, 22954, 497);
INSERT INTO `os_patent_agent_link` VALUES (13964, 22954, 498);
INSERT INTO `os_patent_agent_link` VALUES (13965, 22956, 496);
INSERT INTO `os_patent_agent_link` VALUES (13966, 22956, 497);
INSERT INTO `os_patent_agent_link` VALUES (13967, 22956, 498);
INSERT INTO `os_patent_agent_link` VALUES (13968, 22957, 499);
INSERT INTO `os_patent_agent_link` VALUES (13969, 22961, 495);
INSERT INTO `os_patent_agent_link` VALUES (13970, 22962, 512);
INSERT INTO `os_patent_agent_link` VALUES (13971, 22963, 495);
INSERT INTO `os_patent_agent_link` VALUES (13972, 22965, 512);
INSERT INTO `os_patent_agent_link` VALUES (13973, 22967, 495);
INSERT INTO `os_patent_agent_link` VALUES (13974, 22969, 495);
INSERT INTO `os_patent_agent_link` VALUES (13975, 22969, 500);
INSERT INTO `os_patent_agent_link` VALUES (13976, 22970, 493);
INSERT INTO `os_patent_agent_link` VALUES (13977, 22971, 493);
INSERT INTO `os_patent_agent_link` VALUES (13978, 22974, 506);
INSERT INTO `os_patent_agent_link` VALUES (13979, 22975, 514);
INSERT INTO `os_patent_agent_link` VALUES (13980, 22975, 515);
INSERT INTO `os_patent_agent_link` VALUES (13981, 22975, 516);
INSERT INTO `os_patent_agent_link` VALUES (13982, 22977, 495);
INSERT INTO `os_patent_agent_link` VALUES (13983, 22978, 506);
INSERT INTO `os_patent_agent_link` VALUES (13984, 22979, 496);
INSERT INTO `os_patent_agent_link` VALUES (13985, 22979, 497);
INSERT INTO `os_patent_agent_link` VALUES (13986, 22979, 498);
INSERT INTO `os_patent_agent_link` VALUES (13987, 22980, 495);
INSERT INTO `os_patent_agent_link` VALUES (13988, 22982, 494);
INSERT INTO `os_patent_agent_link` VALUES (13989, 22985, 517);
INSERT INTO `os_patent_agent_link` VALUES (13990, 22987, 495);
INSERT INTO `os_patent_agent_link` VALUES (13991, 22988, 496);
INSERT INTO `os_patent_agent_link` VALUES (13992, 22988, 497);
INSERT INTO `os_patent_agent_link` VALUES (13993, 22988, 498);
INSERT INTO `os_patent_agent_link` VALUES (13994, 22989, 493);
INSERT INTO `os_patent_agent_link` VALUES (13995, 22990, 499);
INSERT INTO `os_patent_agent_link` VALUES (13996, 22991, 506);
INSERT INTO `os_patent_agent_link` VALUES (13997, 22991, 507);
INSERT INTO `os_patent_agent_link` VALUES (13998, 22992, 503);
INSERT INTO `os_patent_agent_link` VALUES (13999, 22993, 506);
INSERT INTO `os_patent_agent_link` VALUES (14000, 22993, 507);
INSERT INTO `os_patent_agent_link` VALUES (14001, 22995, 495);
INSERT INTO `os_patent_agent_link` VALUES (14002, 22995, 500);
INSERT INTO `os_patent_agent_link` VALUES (14003, 22998, 495);
INSERT INTO `os_patent_agent_link` VALUES (14004, 22998, 500);
INSERT INTO `os_patent_agent_link` VALUES (14005, 22999, 518);
INSERT INTO `os_patent_agent_link` VALUES (14006, 23003, 496);
INSERT INTO `os_patent_agent_link` VALUES (14007, 23003, 497);
INSERT INTO `os_patent_agent_link` VALUES (14008, 23003, 498);
INSERT INTO `os_patent_agent_link` VALUES (14009, 23005, 496);
INSERT INTO `os_patent_agent_link` VALUES (14010, 23005, 497);
INSERT INTO `os_patent_agent_link` VALUES (14011, 23005, 498);
INSERT INTO `os_patent_agent_link` VALUES (14012, 23006, 505);
INSERT INTO `os_patent_agent_link` VALUES (14013, 23006, 519);
INSERT INTO `os_patent_agent_link` VALUES (14014, 23006, 520);
INSERT INTO `os_patent_agent_link` VALUES (14015, 23006, 521);
INSERT INTO `os_patent_agent_link` VALUES (14016, 23006, 522);
INSERT INTO `os_patent_agent_link` VALUES (14017, 23008, 495);
INSERT INTO `os_patent_agent_link` VALUES (14018, 23009, 495);
INSERT INTO `os_patent_agent_link` VALUES (14019, 23010, 503);
INSERT INTO `os_patent_agent_link` VALUES (14020, 23015, 495);
INSERT INTO `os_patent_agent_link` VALUES (14021, 23016, 512);
INSERT INTO `os_patent_agent_link` VALUES (14022, 23019, 495);
INSERT INTO `os_patent_agent_link` VALUES (14023, 23019, 500);
INSERT INTO `os_patent_agent_link` VALUES (14024, 23020, 523);
INSERT INTO `os_patent_agent_link` VALUES (14025, 23022, 495);
INSERT INTO `os_patent_agent_link` VALUES (14026, 23022, 500);
INSERT INTO `os_patent_agent_link` VALUES (14027, 23025, 512);
INSERT INTO `os_patent_agent_link` VALUES (14028, 23031, 517);
INSERT INTO `os_patent_agent_link` VALUES (14029, 23032, 506);
INSERT INTO `os_patent_agent_link` VALUES (14030, 23032, 507);
INSERT INTO `os_patent_agent_link` VALUES (14031, 23034, 518);
INSERT INTO `os_patent_agent_link` VALUES (14032, 23037, 495);
INSERT INTO `os_patent_agent_link` VALUES (14033, 23037, 500);
INSERT INTO `os_patent_agent_link` VALUES (14034, 23038, 512);
INSERT INTO `os_patent_agent_link` VALUES (14035, 23048, 501);
INSERT INTO `os_patent_agent_link` VALUES (14036, 23048, 505);
INSERT INTO `os_patent_agent_link` VALUES (14037, 23048, 520);
INSERT INTO `os_patent_agent_link` VALUES (14038, 23048, 521);
INSERT INTO `os_patent_agent_link` VALUES (14039, 23048, 522);
INSERT INTO `os_patent_agent_link` VALUES (14040, 23050, 496);
INSERT INTO `os_patent_agent_link` VALUES (14041, 23050, 497);
INSERT INTO `os_patent_agent_link` VALUES (14042, 23050, 498);
INSERT INTO `os_patent_agent_link` VALUES (14043, 23055, 495);
INSERT INTO `os_patent_agent_link` VALUES (14044, 23055, 500);
INSERT INTO `os_patent_agent_link` VALUES (14045, 23059, 495);
INSERT INTO `os_patent_agent_link` VALUES (14046, 23059, 500);
INSERT INTO `os_patent_agent_link` VALUES (14047, 23061, 496);
INSERT INTO `os_patent_agent_link` VALUES (14048, 23061, 497);
INSERT INTO `os_patent_agent_link` VALUES (14049, 23061, 498);
INSERT INTO `os_patent_agent_link` VALUES (14050, 23062, 496);
INSERT INTO `os_patent_agent_link` VALUES (14051, 23062, 497);
INSERT INTO `os_patent_agent_link` VALUES (14052, 23062, 498);
INSERT INTO `os_patent_agent_link` VALUES (14053, 23063, 496);
INSERT INTO `os_patent_agent_link` VALUES (14054, 23063, 497);
INSERT INTO `os_patent_agent_link` VALUES (14055, 23063, 498);
INSERT INTO `os_patent_agent_link` VALUES (14056, 23065, 495);
INSERT INTO `os_patent_agent_link` VALUES (14057, 23065, 500);
INSERT INTO `os_patent_agent_link` VALUES (14058, 23066, 506);
INSERT INTO `os_patent_agent_link` VALUES (14059, 23066, 507);
INSERT INTO `os_patent_agent_link` VALUES (14060, 23070, 496);
INSERT INTO `os_patent_agent_link` VALUES (14061, 23070, 497);
INSERT INTO `os_patent_agent_link` VALUES (14062, 23070, 498);
INSERT INTO `os_patent_agent_link` VALUES (14063, 23071, 496);
INSERT INTO `os_patent_agent_link` VALUES (14064, 23071, 497);
INSERT INTO `os_patent_agent_link` VALUES (14065, 23071, 498);
INSERT INTO `os_patent_agent_link` VALUES (14066, 23073, 496);
INSERT INTO `os_patent_agent_link` VALUES (14067, 23073, 497);
INSERT INTO `os_patent_agent_link` VALUES (14068, 23073, 498);
INSERT INTO `os_patent_agent_link` VALUES (14069, 23076, 496);
INSERT INTO `os_patent_agent_link` VALUES (14070, 23076, 497);
INSERT INTO `os_patent_agent_link` VALUES (14071, 23076, 498);
INSERT INTO `os_patent_agent_link` VALUES (14072, 23078, 495);
INSERT INTO `os_patent_agent_link` VALUES (14073, 23078, 500);
INSERT INTO `os_patent_agent_link` VALUES (14074, 23081, 496);
INSERT INTO `os_patent_agent_link` VALUES (14075, 23081, 497);
INSERT INTO `os_patent_agent_link` VALUES (14076, 23081, 498);
INSERT INTO `os_patent_agent_link` VALUES (14077, 23086, 496);
INSERT INTO `os_patent_agent_link` VALUES (14078, 23086, 497);
INSERT INTO `os_patent_agent_link` VALUES (14079, 23086, 498);
INSERT INTO `os_patent_agent_link` VALUES (14080, 23093, 496);
INSERT INTO `os_patent_agent_link` VALUES (14081, 23093, 497);
INSERT INTO `os_patent_agent_link` VALUES (14082, 23093, 498);
INSERT INTO `os_patent_agent_link` VALUES (14083, 23094, 493);
INSERT INTO `os_patent_agent_link` VALUES (14084, 23095, 524);
INSERT INTO `os_patent_agent_link` VALUES (14085, 23097, 496);
INSERT INTO `os_patent_agent_link` VALUES (14086, 23097, 497);
INSERT INTO `os_patent_agent_link` VALUES (14087, 23097, 498);
INSERT INTO `os_patent_agent_link` VALUES (14088, 23098, 495);
INSERT INTO `os_patent_agent_link` VALUES (14089, 23098, 500);
INSERT INTO `os_patent_agent_link` VALUES (14090, 23102, 496);
INSERT INTO `os_patent_agent_link` VALUES (14091, 23102, 497);
INSERT INTO `os_patent_agent_link` VALUES (14092, 23102, 498);
INSERT INTO `os_patent_agent_link` VALUES (14093, 23106, 499);
INSERT INTO `os_patent_agent_link` VALUES (14094, 23110, 495);
INSERT INTO `os_patent_agent_link` VALUES (14095, 23110, 500);
INSERT INTO `os_patent_agent_link` VALUES (14096, 23113, 495);
INSERT INTO `os_patent_agent_link` VALUES (14097, 23113, 500);
INSERT INTO `os_patent_agent_link` VALUES (14098, 23115, 495);
INSERT INTO `os_patent_agent_link` VALUES (14099, 23115, 500);
INSERT INTO `os_patent_agent_link` VALUES (14100, 23116, 496);
INSERT INTO `os_patent_agent_link` VALUES (14101, 23116, 497);
INSERT INTO `os_patent_agent_link` VALUES (14102, 23116, 498);
INSERT INTO `os_patent_agent_link` VALUES (14103, 23117, 496);
INSERT INTO `os_patent_agent_link` VALUES (14104, 23117, 497);
INSERT INTO `os_patent_agent_link` VALUES (14105, 23117, 498);
INSERT INTO `os_patent_agent_link` VALUES (14106, 23118, 496);
INSERT INTO `os_patent_agent_link` VALUES (14107, 23118, 497);
INSERT INTO `os_patent_agent_link` VALUES (14108, 23118, 498);
INSERT INTO `os_patent_agent_link` VALUES (14109, 23120, 495);
INSERT INTO `os_patent_agent_link` VALUES (14110, 23120, 500);
INSERT INTO `os_patent_agent_link` VALUES (14111, 23122, 496);
INSERT INTO `os_patent_agent_link` VALUES (14112, 23122, 497);
INSERT INTO `os_patent_agent_link` VALUES (14113, 23122, 498);
INSERT INTO `os_patent_agent_link` VALUES (14114, 23123, 496);
INSERT INTO `os_patent_agent_link` VALUES (14115, 23123, 497);
INSERT INTO `os_patent_agent_link` VALUES (14116, 23123, 498);
INSERT INTO `os_patent_agent_link` VALUES (14117, 23124, 525);
INSERT INTO `os_patent_agent_link` VALUES (14118, 23124, 526);
INSERT INTO `os_patent_agent_link` VALUES (14119, 23124, 527);
INSERT INTO `os_patent_agent_link` VALUES (14120, 23124, 528);
INSERT INTO `os_patent_agent_link` VALUES (14121, 23124, 529);
INSERT INTO `os_patent_agent_link` VALUES (14122, 23124, 530);
INSERT INTO `os_patent_agent_link` VALUES (14123, 23124, 531);
INSERT INTO `os_patent_agent_link` VALUES (14124, 23129, 495);
INSERT INTO `os_patent_agent_link` VALUES (14125, 23129, 500);
INSERT INTO `os_patent_agent_link` VALUES (14126, 23133, 495);
INSERT INTO `os_patent_agent_link` VALUES (14127, 23133, 500);
INSERT INTO `os_patent_agent_link` VALUES (14128, 23137, 496);
INSERT INTO `os_patent_agent_link` VALUES (14129, 23137, 497);
INSERT INTO `os_patent_agent_link` VALUES (14130, 23137, 498);
INSERT INTO `os_patent_agent_link` VALUES (14131, 23139, 532);
INSERT INTO `os_patent_agent_link` VALUES (14132, 23140, 496);
INSERT INTO `os_patent_agent_link` VALUES (14133, 23140, 497);
INSERT INTO `os_patent_agent_link` VALUES (14134, 23140, 498);
INSERT INTO `os_patent_agent_link` VALUES (14135, 23141, 496);
INSERT INTO `os_patent_agent_link` VALUES (14136, 23141, 497);
INSERT INTO `os_patent_agent_link` VALUES (14137, 23141, 498);
INSERT INTO `os_patent_agent_link` VALUES (14138, 23142, 496);
INSERT INTO `os_patent_agent_link` VALUES (14139, 23142, 497);
INSERT INTO `os_patent_agent_link` VALUES (14140, 23142, 498);
INSERT INTO `os_patent_agent_link` VALUES (14141, 23146, 495);
INSERT INTO `os_patent_agent_link` VALUES (14142, 23146, 500);
INSERT INTO `os_patent_agent_link` VALUES (14143, 23147, 495);
INSERT INTO `os_patent_agent_link` VALUES (14144, 23147, 500);
INSERT INTO `os_patent_agent_link` VALUES (14145, 23149, 496);
INSERT INTO `os_patent_agent_link` VALUES (14146, 23149, 497);
INSERT INTO `os_patent_agent_link` VALUES (14147, 23149, 498);
INSERT INTO `os_patent_agent_link` VALUES (14148, 23150, 496);
INSERT INTO `os_patent_agent_link` VALUES (14149, 23150, 497);
INSERT INTO `os_patent_agent_link` VALUES (14150, 23150, 498);
INSERT INTO `os_patent_agent_link` VALUES (14151, 23153, 517);
INSERT INTO `os_patent_agent_link` VALUES (14152, 23153, 533);
INSERT INTO `os_patent_agent_link` VALUES (14153, 23155, 495);
INSERT INTO `os_patent_agent_link` VALUES (14154, 23155, 500);
INSERT INTO `os_patent_agent_link` VALUES (14155, 23156, 495);
INSERT INTO `os_patent_agent_link` VALUES (14156, 23156, 500);
INSERT INTO `os_patent_agent_link` VALUES (14157, 23157, 496);
INSERT INTO `os_patent_agent_link` VALUES (14158, 23157, 497);
INSERT INTO `os_patent_agent_link` VALUES (14159, 23157, 498);
INSERT INTO `os_patent_agent_link` VALUES (14160, 23158, 496);
INSERT INTO `os_patent_agent_link` VALUES (14161, 23158, 497);
INSERT INTO `os_patent_agent_link` VALUES (14162, 23158, 498);
INSERT INTO `os_patent_agent_link` VALUES (14163, 23159, 505);
INSERT INTO `os_patent_agent_link` VALUES (14164, 23159, 521);
INSERT INTO `os_patent_agent_link` VALUES (14165, 23159, 534);
INSERT INTO `os_patent_agent_link` VALUES (14166, 23159, 535);
INSERT INTO `os_patent_agent_link` VALUES (14167, 23159, 536);
INSERT INTO `os_patent_agent_link` VALUES (14168, 23160, 496);
INSERT INTO `os_patent_agent_link` VALUES (14169, 23160, 497);
INSERT INTO `os_patent_agent_link` VALUES (14170, 23160, 498);
INSERT INTO `os_patent_agent_link` VALUES (14171, 23164, 495);
INSERT INTO `os_patent_agent_link` VALUES (14172, 23164, 500);
INSERT INTO `os_patent_agent_link` VALUES (14173, 23167, 495);
INSERT INTO `os_patent_agent_link` VALUES (14174, 23167, 500);
INSERT INTO `os_patent_agent_link` VALUES (14175, 23168, 495);
INSERT INTO `os_patent_agent_link` VALUES (14176, 23168, 500);
INSERT INTO `os_patent_agent_link` VALUES (14177, 23173, 495);
INSERT INTO `os_patent_agent_link` VALUES (14178, 23173, 500);
INSERT INTO `os_patent_agent_link` VALUES (14179, 23174, 495);
INSERT INTO `os_patent_agent_link` VALUES (14180, 23174, 500);
INSERT INTO `os_patent_agent_link` VALUES (14181, 23176, 494);
INSERT INTO `os_patent_agent_link` VALUES (14182, 23177, 496);
INSERT INTO `os_patent_agent_link` VALUES (14183, 23177, 497);
INSERT INTO `os_patent_agent_link` VALUES (14184, 23177, 498);
INSERT INTO `os_patent_agent_link` VALUES (14185, 23182, 495);
INSERT INTO `os_patent_agent_link` VALUES (14186, 23182, 500);
INSERT INTO `os_patent_agent_link` VALUES (14187, 23184, 495);
INSERT INTO `os_patent_agent_link` VALUES (14188, 23184, 500);
INSERT INTO `os_patent_agent_link` VALUES (14189, 23185, 537);
INSERT INTO `os_patent_agent_link` VALUES (14190, 23189, 532);
INSERT INTO `os_patent_agent_link` VALUES (14191, 23190, 495);
INSERT INTO `os_patent_agent_link` VALUES (14192, 23190, 500);
INSERT INTO `os_patent_agent_link` VALUES (14193, 23192, 496);
INSERT INTO `os_patent_agent_link` VALUES (14194, 23192, 497);
INSERT INTO `os_patent_agent_link` VALUES (14195, 23192, 498);
INSERT INTO `os_patent_agent_link` VALUES (14196, 23195, 503);
INSERT INTO `os_patent_agent_link` VALUES (14197, 23197, 496);
INSERT INTO `os_patent_agent_link` VALUES (14198, 23197, 497);
INSERT INTO `os_patent_agent_link` VALUES (14199, 23197, 498);
INSERT INTO `os_patent_agent_link` VALUES (14200, 23203, 495);
INSERT INTO `os_patent_agent_link` VALUES (14201, 23203, 500);
INSERT INTO `os_patent_agent_link` VALUES (14202, 23204, 495);
INSERT INTO `os_patent_agent_link` VALUES (14203, 23204, 500);
INSERT INTO `os_patent_agent_link` VALUES (14204, 23207, 496);
INSERT INTO `os_patent_agent_link` VALUES (14205, 23207, 497);
INSERT INTO `os_patent_agent_link` VALUES (14206, 23207, 498);
INSERT INTO `os_patent_agent_link` VALUES (14207, 23208, 505);
INSERT INTO `os_patent_agent_link` VALUES (14208, 23212, 496);
INSERT INTO `os_patent_agent_link` VALUES (14209, 23212, 497);
INSERT INTO `os_patent_agent_link` VALUES (14210, 23212, 498);
INSERT INTO `os_patent_agent_link` VALUES (14211, 23213, 503);
INSERT INTO `os_patent_agent_link` VALUES (14212, 23214, 495);
INSERT INTO `os_patent_agent_link` VALUES (14213, 23214, 500);
INSERT INTO `os_patent_agent_link` VALUES (14214, 23215, 495);
INSERT INTO `os_patent_agent_link` VALUES (14215, 23215, 500);
INSERT INTO `os_patent_agent_link` VALUES (14216, 23216, 496);
INSERT INTO `os_patent_agent_link` VALUES (14217, 23216, 497);
INSERT INTO `os_patent_agent_link` VALUES (14218, 23216, 498);
INSERT INTO `os_patent_agent_link` VALUES (14219, 23217, 496);
INSERT INTO `os_patent_agent_link` VALUES (14220, 23217, 497);
INSERT INTO `os_patent_agent_link` VALUES (14221, 23217, 498);
INSERT INTO `os_patent_agent_link` VALUES (14222, 23220, 517);
INSERT INTO `os_patent_agent_link` VALUES (14223, 23220, 533);
INSERT INTO `os_patent_agent_link` VALUES (14224, 23221, 538);
INSERT INTO `os_patent_agent_link` VALUES (14225, 23223, 495);
INSERT INTO `os_patent_agent_link` VALUES (14226, 23223, 500);
INSERT INTO `os_patent_agent_link` VALUES (14227, 23224, 496);
INSERT INTO `os_patent_agent_link` VALUES (14228, 23224, 497);
INSERT INTO `os_patent_agent_link` VALUES (14229, 23224, 498);
INSERT INTO `os_patent_agent_link` VALUES (14230, 23227, 496);
INSERT INTO `os_patent_agent_link` VALUES (14231, 23227, 497);
INSERT INTO `os_patent_agent_link` VALUES (14232, 23227, 498);
INSERT INTO `os_patent_agent_link` VALUES (14233, 23236, 503);
INSERT INTO `os_patent_agent_link` VALUES (14234, 23240, 539);
INSERT INTO `os_patent_agent_link` VALUES (14235, 23240, 540);
INSERT INTO `os_patent_agent_link` VALUES (14236, 23240, 541);
INSERT INTO `os_patent_agent_link` VALUES (14237, 23243, 542);
INSERT INTO `os_patent_agent_link` VALUES (14238, 23243, 543);
INSERT INTO `os_patent_agent_link` VALUES (14239, 23245, 544);
INSERT INTO `os_patent_agent_link` VALUES (14240, 23248, 545);
INSERT INTO `os_patent_agent_link` VALUES (14241, 23249, 545);
INSERT INTO `os_patent_agent_link` VALUES (14242, 23254, 546);
INSERT INTO `os_patent_agent_link` VALUES (14243, 23263, 539);
INSERT INTO `os_patent_agent_link` VALUES (14244, 23263, 540);
INSERT INTO `os_patent_agent_link` VALUES (14245, 23263, 541);
INSERT INTO `os_patent_agent_link` VALUES (14246, 23265, 495);
INSERT INTO `os_patent_agent_link` VALUES (14247, 23265, 500);
INSERT INTO `os_patent_agent_link` VALUES (14248, 23268, 496);
INSERT INTO `os_patent_agent_link` VALUES (14249, 23268, 497);
INSERT INTO `os_patent_agent_link` VALUES (14250, 23268, 498);
INSERT INTO `os_patent_agent_link` VALUES (14251, 23269, 539);
INSERT INTO `os_patent_agent_link` VALUES (14252, 23269, 540);
INSERT INTO `os_patent_agent_link` VALUES (14253, 23269, 541);
INSERT INTO `os_patent_agent_link` VALUES (14254, 23270, 539);
INSERT INTO `os_patent_agent_link` VALUES (14255, 23270, 540);
INSERT INTO `os_patent_agent_link` VALUES (14256, 23270, 541);
INSERT INTO `os_patent_agent_link` VALUES (14257, 23271, 539);
INSERT INTO `os_patent_agent_link` VALUES (14258, 23271, 540);
INSERT INTO `os_patent_agent_link` VALUES (14259, 23271, 541);
INSERT INTO `os_patent_agent_link` VALUES (14260, 23275, 495);
INSERT INTO `os_patent_agent_link` VALUES (14261, 23275, 500);
INSERT INTO `os_patent_agent_link` VALUES (14262, 23277, 547);
INSERT INTO `os_patent_agent_link` VALUES (14263, 23277, 548);
INSERT INTO `os_patent_agent_link` VALUES (14264, 23277, 549);
INSERT INTO `os_patent_agent_link` VALUES (14265, 23277, 550);
INSERT INTO `os_patent_agent_link` VALUES (14266, 23278, 539);
INSERT INTO `os_patent_agent_link` VALUES (14267, 23278, 540);
INSERT INTO `os_patent_agent_link` VALUES (14268, 23278, 541);
INSERT INTO `os_patent_agent_link` VALUES (14269, 23279, 539);
INSERT INTO `os_patent_agent_link` VALUES (14270, 23279, 540);
INSERT INTO `os_patent_agent_link` VALUES (14271, 23279, 541);
INSERT INTO `os_patent_agent_link` VALUES (14272, 23286, 546);
INSERT INTO `os_patent_agent_link` VALUES (14273, 23288, 539);
INSERT INTO `os_patent_agent_link` VALUES (14274, 23288, 540);
INSERT INTO `os_patent_agent_link` VALUES (14275, 23288, 541);
INSERT INTO `os_patent_agent_link` VALUES (14276, 23289, 539);
INSERT INTO `os_patent_agent_link` VALUES (14277, 23289, 540);
INSERT INTO `os_patent_agent_link` VALUES (14278, 23289, 541);
INSERT INTO `os_patent_agent_link` VALUES (14279, 23298, 546);
INSERT INTO `os_patent_agent_link` VALUES (14280, 23302, 496);
INSERT INTO `os_patent_agent_link` VALUES (14281, 23302, 497);
INSERT INTO `os_patent_agent_link` VALUES (14282, 23302, 498);
INSERT INTO `os_patent_agent_link` VALUES (14283, 23307, 496);
INSERT INTO `os_patent_agent_link` VALUES (14284, 23307, 497);
INSERT INTO `os_patent_agent_link` VALUES (14285, 23307, 498);
INSERT INTO `os_patent_agent_link` VALUES (14286, 23308, 496);
INSERT INTO `os_patent_agent_link` VALUES (14287, 23308, 497);
INSERT INTO `os_patent_agent_link` VALUES (14288, 23308, 498);
INSERT INTO `os_patent_agent_link` VALUES (14289, 23310, 496);
INSERT INTO `os_patent_agent_link` VALUES (14290, 23310, 497);
INSERT INTO `os_patent_agent_link` VALUES (14291, 23310, 498);
INSERT INTO `os_patent_agent_link` VALUES (14292, 23314, 496);
INSERT INTO `os_patent_agent_link` VALUES (14293, 23314, 497);
INSERT INTO `os_patent_agent_link` VALUES (14294, 23314, 498);
INSERT INTO `os_patent_agent_link` VALUES (14295, 23316, 496);
INSERT INTO `os_patent_agent_link` VALUES (14296, 23316, 497);
INSERT INTO `os_patent_agent_link` VALUES (14297, 23316, 498);
INSERT INTO `os_patent_agent_link` VALUES (14298, 23321, 546);
INSERT INTO `os_patent_agent_link` VALUES (14299, 23327, 495);
INSERT INTO `os_patent_agent_link` VALUES (14300, 23327, 500);
INSERT INTO `os_patent_agent_link` VALUES (14301, 23328, 546);
INSERT INTO `os_patent_agent_link` VALUES (14302, 23331, 546);
INSERT INTO `os_patent_agent_link` VALUES (14303, 23334, 539);
INSERT INTO `os_patent_agent_link` VALUES (14304, 23334, 541);
INSERT INTO `os_patent_agent_link` VALUES (14305, 23335, 539);
INSERT INTO `os_patent_agent_link` VALUES (14306, 23335, 541);
INSERT INTO `os_patent_agent_link` VALUES (14307, 23342, 495);
INSERT INTO `os_patent_agent_link` VALUES (14308, 23342, 500);
INSERT INTO `os_patent_agent_link` VALUES (14309, 23343, 496);
INSERT INTO `os_patent_agent_link` VALUES (14310, 23343, 497);
INSERT INTO `os_patent_agent_link` VALUES (14311, 23343, 498);
INSERT INTO `os_patent_agent_link` VALUES (14312, 23345, 496);
INSERT INTO `os_patent_agent_link` VALUES (14313, 23345, 497);
INSERT INTO `os_patent_agent_link` VALUES (14314, 23345, 498);
INSERT INTO `os_patent_agent_link` VALUES (14315, 23347, 517);
INSERT INTO `os_patent_agent_link` VALUES (14316, 23347, 533);
INSERT INTO `os_patent_agent_link` VALUES (14317, 23349, 539);
INSERT INTO `os_patent_agent_link` VALUES (14318, 23349, 541);
INSERT INTO `os_patent_agent_link` VALUES (14319, 23350, 539);
INSERT INTO `os_patent_agent_link` VALUES (14320, 23350, 541);
INSERT INTO `os_patent_agent_link` VALUES (14321, 23358, 539);
INSERT INTO `os_patent_agent_link` VALUES (14322, 23358, 541);
INSERT INTO `os_patent_agent_link` VALUES (14323, 23362, 495);
INSERT INTO `os_patent_agent_link` VALUES (14324, 23362, 500);
INSERT INTO `os_patent_agent_link` VALUES (14325, 23362, 551);
INSERT INTO `os_patent_agent_link` VALUES (14326, 23363, 496);
INSERT INTO `os_patent_agent_link` VALUES (14327, 23363, 497);
INSERT INTO `os_patent_agent_link` VALUES (14328, 23363, 498);
INSERT INTO `os_patent_agent_link` VALUES (14329, 23364, 495);
INSERT INTO `os_patent_agent_link` VALUES (14330, 23364, 500);
INSERT INTO `os_patent_agent_link` VALUES (14331, 23364, 551);
INSERT INTO `os_patent_agent_link` VALUES (14332, 23366, 517);
INSERT INTO `os_patent_agent_link` VALUES (14333, 23366, 533);
INSERT INTO `os_patent_agent_link` VALUES (14334, 23367, 496);
INSERT INTO `os_patent_agent_link` VALUES (14335, 23367, 497);
INSERT INTO `os_patent_agent_link` VALUES (14336, 23367, 498);
INSERT INTO `os_patent_agent_link` VALUES (14337, 23368, 552);
INSERT INTO `os_patent_agent_link` VALUES (14338, 23368, 553);
INSERT INTO `os_patent_agent_link` VALUES (14339, 23368, 554);
INSERT INTO `os_patent_agent_link` VALUES (14340, 23368, 555);
INSERT INTO `os_patent_agent_link` VALUES (14341, 23368, 556);
INSERT INTO `os_patent_agent_link` VALUES (14342, 23368, 557);
INSERT INTO `os_patent_agent_link` VALUES (14343, 23369, 503);
INSERT INTO `os_patent_agent_link` VALUES (14344, 23372, 503);
INSERT INTO `os_patent_agent_link` VALUES (14345, 23372, 558);
INSERT INTO `os_patent_agent_link` VALUES (14346, 23373, 503);
INSERT INTO `os_patent_agent_link` VALUES (14347, 23374, 539);
INSERT INTO `os_patent_agent_link` VALUES (14348, 23374, 541);
INSERT INTO `os_patent_agent_link` VALUES (14349, 23375, 496);
INSERT INTO `os_patent_agent_link` VALUES (14350, 23375, 497);
INSERT INTO `os_patent_agent_link` VALUES (14351, 23375, 498);
INSERT INTO `os_patent_agent_link` VALUES (14352, 23376, 495);
INSERT INTO `os_patent_agent_link` VALUES (14353, 23376, 500);
INSERT INTO `os_patent_agent_link` VALUES (14354, 23376, 551);
INSERT INTO `os_patent_agent_link` VALUES (14355, 23378, 495);
INSERT INTO `os_patent_agent_link` VALUES (14356, 23378, 500);
INSERT INTO `os_patent_agent_link` VALUES (14357, 23378, 551);
INSERT INTO `os_patent_agent_link` VALUES (14358, 23379, 539);
INSERT INTO `os_patent_agent_link` VALUES (14359, 23379, 541);
INSERT INTO `os_patent_agent_link` VALUES (14360, 23380, 539);
INSERT INTO `os_patent_agent_link` VALUES (14361, 23380, 541);
INSERT INTO `os_patent_agent_link` VALUES (14362, 23384, 496);
INSERT INTO `os_patent_agent_link` VALUES (14363, 23384, 497);
INSERT INTO `os_patent_agent_link` VALUES (14364, 23384, 498);
INSERT INTO `os_patent_agent_link` VALUES (14365, 23387, 495);
INSERT INTO `os_patent_agent_link` VALUES (14366, 23387, 500);
INSERT INTO `os_patent_agent_link` VALUES (14367, 23387, 551);
INSERT INTO `os_patent_agent_link` VALUES (14368, 23388, 495);
INSERT INTO `os_patent_agent_link` VALUES (14369, 23388, 500);
INSERT INTO `os_patent_agent_link` VALUES (14370, 23388, 551);
INSERT INTO `os_patent_agent_link` VALUES (14371, 23389, 495);
INSERT INTO `os_patent_agent_link` VALUES (14372, 23389, 500);
INSERT INTO `os_patent_agent_link` VALUES (14373, 23389, 551);
INSERT INTO `os_patent_agent_link` VALUES (14374, 23390, 496);
INSERT INTO `os_patent_agent_link` VALUES (14375, 23390, 497);
INSERT INTO `os_patent_agent_link` VALUES (14376, 23390, 498);
INSERT INTO `os_patent_agent_link` VALUES (14377, 23391, 495);
INSERT INTO `os_patent_agent_link` VALUES (14378, 23391, 500);
INSERT INTO `os_patent_agent_link` VALUES (14379, 23391, 551);
INSERT INTO `os_patent_agent_link` VALUES (14380, 23395, 495);
INSERT INTO `os_patent_agent_link` VALUES (14381, 23395, 500);
INSERT INTO `os_patent_agent_link` VALUES (14382, 23395, 551);
INSERT INTO `os_patent_agent_link` VALUES (14383, 23397, 495);
INSERT INTO `os_patent_agent_link` VALUES (14384, 23397, 500);
INSERT INTO `os_patent_agent_link` VALUES (14385, 23397, 551);
INSERT INTO `os_patent_agent_link` VALUES (14386, 23399, 559);
INSERT INTO `os_patent_agent_link` VALUES (14387, 23399, 560);
INSERT INTO `os_patent_agent_link` VALUES (14388, 23401, 495);
INSERT INTO `os_patent_agent_link` VALUES (14389, 23401, 500);
INSERT INTO `os_patent_agent_link` VALUES (14390, 23401, 551);
INSERT INTO `os_patent_agent_link` VALUES (14391, 23403, 539);
INSERT INTO `os_patent_agent_link` VALUES (14392, 23403, 541);
INSERT INTO `os_patent_agent_link` VALUES (14393, 23405, 495);
INSERT INTO `os_patent_agent_link` VALUES (14394, 23405, 500);
INSERT INTO `os_patent_agent_link` VALUES (14395, 23405, 551);
INSERT INTO `os_patent_agent_link` VALUES (14396, 23406, 495);
INSERT INTO `os_patent_agent_link` VALUES (14397, 23406, 500);
INSERT INTO `os_patent_agent_link` VALUES (14398, 23406, 551);
INSERT INTO `os_patent_agent_link` VALUES (14399, 23409, 517);
INSERT INTO `os_patent_agent_link` VALUES (14400, 23409, 533);
INSERT INTO `os_patent_agent_link` VALUES (14401, 23411, 561);
INSERT INTO `os_patent_agent_link` VALUES (14402, 23416, 495);
INSERT INTO `os_patent_agent_link` VALUES (14403, 23416, 500);
INSERT INTO `os_patent_agent_link` VALUES (14404, 23416, 551);
INSERT INTO `os_patent_agent_link` VALUES (14405, 23417, 495);
INSERT INTO `os_patent_agent_link` VALUES (14406, 23417, 500);
INSERT INTO `os_patent_agent_link` VALUES (14407, 23417, 551);
INSERT INTO `os_patent_agent_link` VALUES (14408, 23419, 495);
INSERT INTO `os_patent_agent_link` VALUES (14409, 23419, 500);
INSERT INTO `os_patent_agent_link` VALUES (14410, 23419, 551);
INSERT INTO `os_patent_agent_link` VALUES (14411, 23420, 495);
INSERT INTO `os_patent_agent_link` VALUES (14412, 23420, 500);
INSERT INTO `os_patent_agent_link` VALUES (14413, 23420, 551);
INSERT INTO `os_patent_agent_link` VALUES (14414, 23426, 559);
INSERT INTO `os_patent_agent_link` VALUES (14415, 23426, 560);
INSERT INTO `os_patent_agent_link` VALUES (14416, 23427, 539);
INSERT INTO `os_patent_agent_link` VALUES (14417, 23427, 541);
INSERT INTO `os_patent_agent_link` VALUES (14418, 23429, 495);
INSERT INTO `os_patent_agent_link` VALUES (14419, 23429, 500);
INSERT INTO `os_patent_agent_link` VALUES (14420, 23429, 551);
INSERT INTO `os_patent_agent_link` VALUES (14421, 23430, 495);
INSERT INTO `os_patent_agent_link` VALUES (14422, 23430, 500);
INSERT INTO `os_patent_agent_link` VALUES (14423, 23430, 551);
INSERT INTO `os_patent_agent_link` VALUES (14424, 23432, 495);
INSERT INTO `os_patent_agent_link` VALUES (14425, 23432, 500);
INSERT INTO `os_patent_agent_link` VALUES (14426, 23432, 551);
INSERT INTO `os_patent_agent_link` VALUES (14427, 23436, 495);
INSERT INTO `os_patent_agent_link` VALUES (14428, 23436, 500);
INSERT INTO `os_patent_agent_link` VALUES (14429, 23436, 551);
INSERT INTO `os_patent_agent_link` VALUES (14430, 23437, 495);
INSERT INTO `os_patent_agent_link` VALUES (14431, 23437, 500);
INSERT INTO `os_patent_agent_link` VALUES (14432, 23437, 551);
INSERT INTO `os_patent_agent_link` VALUES (14433, 23438, 495);
INSERT INTO `os_patent_agent_link` VALUES (14434, 23438, 500);
INSERT INTO `os_patent_agent_link` VALUES (14435, 23438, 551);
INSERT INTO `os_patent_agent_link` VALUES (14436, 23440, 503);
INSERT INTO `os_patent_agent_link` VALUES (14437, 23440, 558);
INSERT INTO `os_patent_agent_link` VALUES (14438, 23442, 503);
INSERT INTO `os_patent_agent_link` VALUES (14439, 23442, 558);
INSERT INTO `os_patent_agent_link` VALUES (14440, 23443, 495);
INSERT INTO `os_patent_agent_link` VALUES (14441, 23443, 500);
INSERT INTO `os_patent_agent_link` VALUES (14442, 23443, 551);
INSERT INTO `os_patent_agent_link` VALUES (14443, 23444, 495);
INSERT INTO `os_patent_agent_link` VALUES (14444, 23444, 500);
INSERT INTO `os_patent_agent_link` VALUES (14445, 23444, 551);
INSERT INTO `os_patent_agent_link` VALUES (14446, 23446, 496);
INSERT INTO `os_patent_agent_link` VALUES (14447, 23446, 497);
INSERT INTO `os_patent_agent_link` VALUES (14448, 23446, 498);
INSERT INTO `os_patent_agent_link` VALUES (14449, 23447, 495);
INSERT INTO `os_patent_agent_link` VALUES (14450, 23447, 500);
INSERT INTO `os_patent_agent_link` VALUES (14451, 23447, 551);
INSERT INTO `os_patent_agent_link` VALUES (14452, 23449, 559);
INSERT INTO `os_patent_agent_link` VALUES (14453, 23449, 560);
INSERT INTO `os_patent_agent_link` VALUES (14454, 23450, 559);
INSERT INTO `os_patent_agent_link` VALUES (14455, 23450, 560);
INSERT INTO `os_patent_agent_link` VALUES (14456, 23451, 559);
INSERT INTO `os_patent_agent_link` VALUES (14457, 23451, 560);
INSERT INTO `os_patent_agent_link` VALUES (14458, 23453, 539);
INSERT INTO `os_patent_agent_link` VALUES (14459, 23453, 541);
INSERT INTO `os_patent_agent_link` VALUES (14460, 23457, 496);
INSERT INTO `os_patent_agent_link` VALUES (14461, 23457, 497);
INSERT INTO `os_patent_agent_link` VALUES (14462, 23457, 498);
INSERT INTO `os_patent_agent_link` VALUES (14463, 23458, 496);
INSERT INTO `os_patent_agent_link` VALUES (14464, 23458, 497);
INSERT INTO `os_patent_agent_link` VALUES (14465, 23458, 498);
INSERT INTO `os_patent_agent_link` VALUES (14466, 23459, 495);
INSERT INTO `os_patent_agent_link` VALUES (14467, 23459, 500);
INSERT INTO `os_patent_agent_link` VALUES (14468, 23459, 551);
INSERT INTO `os_patent_agent_link` VALUES (14469, 23460, 495);
INSERT INTO `os_patent_agent_link` VALUES (14470, 23460, 500);
INSERT INTO `os_patent_agent_link` VALUES (14471, 23460, 551);
INSERT INTO `os_patent_agent_link` VALUES (14472, 23464, 495);
INSERT INTO `os_patent_agent_link` VALUES (14473, 23464, 500);
INSERT INTO `os_patent_agent_link` VALUES (14474, 23464, 551);
INSERT INTO `os_patent_agent_link` VALUES (14475, 23468, 493);
INSERT INTO `os_patent_agent_link` VALUES (14476, 23469, 495);
INSERT INTO `os_patent_agent_link` VALUES (14477, 23469, 500);
INSERT INTO `os_patent_agent_link` VALUES (14478, 23469, 551);
INSERT INTO `os_patent_agent_link` VALUES (14479, 23470, 542);
INSERT INTO `os_patent_agent_link` VALUES (14480, 23470, 543);
INSERT INTO `os_patent_agent_link` VALUES (14481, 23472, 496);
INSERT INTO `os_patent_agent_link` VALUES (14482, 23472, 498);
INSERT INTO `os_patent_agent_link` VALUES (14483, 23476, 503);
INSERT INTO `os_patent_agent_link` VALUES (14484, 23476, 558);
INSERT INTO `os_patent_agent_link` VALUES (14485, 23477, 495);
INSERT INTO `os_patent_agent_link` VALUES (14486, 23477, 500);
INSERT INTO `os_patent_agent_link` VALUES (14487, 23477, 551);
INSERT INTO `os_patent_agent_link` VALUES (14488, 23478, 539);
INSERT INTO `os_patent_agent_link` VALUES (14489, 23478, 541);
INSERT INTO `os_patent_agent_link` VALUES (14490, 23479, 495);
INSERT INTO `os_patent_agent_link` VALUES (14491, 23479, 500);
INSERT INTO `os_patent_agent_link` VALUES (14492, 23479, 551);
INSERT INTO `os_patent_agent_link` VALUES (14493, 23480, 495);
INSERT INTO `os_patent_agent_link` VALUES (14494, 23480, 500);
INSERT INTO `os_patent_agent_link` VALUES (14495, 23480, 551);
INSERT INTO `os_patent_agent_link` VALUES (14496, 23483, 495);
INSERT INTO `os_patent_agent_link` VALUES (14497, 23483, 500);
INSERT INTO `os_patent_agent_link` VALUES (14498, 23483, 551);
INSERT INTO `os_patent_agent_link` VALUES (14499, 23484, 495);
INSERT INTO `os_patent_agent_link` VALUES (14500, 23484, 500);
INSERT INTO `os_patent_agent_link` VALUES (14501, 23484, 551);
INSERT INTO `os_patent_agent_link` VALUES (14502, 23486, 539);
INSERT INTO `os_patent_agent_link` VALUES (14503, 23486, 541);
INSERT INTO `os_patent_agent_link` VALUES (14504, 23488, 495);
INSERT INTO `os_patent_agent_link` VALUES (14505, 23488, 500);
INSERT INTO `os_patent_agent_link` VALUES (14506, 23488, 551);
INSERT INTO `os_patent_agent_link` VALUES (14507, 23490, 495);
INSERT INTO `os_patent_agent_link` VALUES (14508, 23490, 500);
INSERT INTO `os_patent_agent_link` VALUES (14509, 23490, 551);
INSERT INTO `os_patent_agent_link` VALUES (14510, 23491, 539);
INSERT INTO `os_patent_agent_link` VALUES (14511, 23491, 541);
INSERT INTO `os_patent_agent_link` VALUES (14512, 23492, 496);
INSERT INTO `os_patent_agent_link` VALUES (14513, 23492, 497);
INSERT INTO `os_patent_agent_link` VALUES (14514, 23492, 498);
INSERT INTO `os_patent_agent_link` VALUES (14515, 23493, 495);
INSERT INTO `os_patent_agent_link` VALUES (14516, 23493, 500);
INSERT INTO `os_patent_agent_link` VALUES (14517, 23493, 551);
INSERT INTO `os_patent_agent_link` VALUES (14518, 23494, 495);
INSERT INTO `os_patent_agent_link` VALUES (14519, 23494, 500);
INSERT INTO `os_patent_agent_link` VALUES (14520, 23494, 551);
INSERT INTO `os_patent_agent_link` VALUES (14521, 23495, 541);
INSERT INTO `os_patent_agent_link` VALUES (14522, 23495, 562);
INSERT INTO `os_patent_agent_link` VALUES (14523, 23496, 539);
INSERT INTO `os_patent_agent_link` VALUES (14524, 23496, 541);
INSERT INTO `os_patent_agent_link` VALUES (14525, 23497, 495);
INSERT INTO `os_patent_agent_link` VALUES (14526, 23497, 500);
INSERT INTO `os_patent_agent_link` VALUES (14527, 23497, 551);
INSERT INTO `os_patent_agent_link` VALUES (14528, 23498, 496);
INSERT INTO `os_patent_agent_link` VALUES (14529, 23498, 497);
INSERT INTO `os_patent_agent_link` VALUES (14530, 23498, 498);
INSERT INTO `os_patent_agent_link` VALUES (14531, 23500, 495);
INSERT INTO `os_patent_agent_link` VALUES (14532, 23500, 500);
INSERT INTO `os_patent_agent_link` VALUES (14533, 23500, 551);
INSERT INTO `os_patent_agent_link` VALUES (14534, 23504, 499);
INSERT INTO `os_patent_agent_link` VALUES (14535, 23506, 495);
INSERT INTO `os_patent_agent_link` VALUES (14536, 23506, 500);
INSERT INTO `os_patent_agent_link` VALUES (14537, 23506, 551);
INSERT INTO `os_patent_agent_link` VALUES (14538, 23510, 495);
INSERT INTO `os_patent_agent_link` VALUES (14539, 23510, 500);
INSERT INTO `os_patent_agent_link` VALUES (14540, 23510, 551);
INSERT INTO `os_patent_agent_link` VALUES (14541, 23513, 559);
INSERT INTO `os_patent_agent_link` VALUES (14542, 23513, 560);
INSERT INTO `os_patent_agent_link` VALUES (14543, 23514, 496);
INSERT INTO `os_patent_agent_link` VALUES (14544, 23514, 497);
INSERT INTO `os_patent_agent_link` VALUES (14545, 23514, 498);
INSERT INTO `os_patent_agent_link` VALUES (14546, 23515, 496);
INSERT INTO `os_patent_agent_link` VALUES (14547, 23515, 497);
INSERT INTO `os_patent_agent_link` VALUES (14548, 23515, 498);
INSERT INTO `os_patent_agent_link` VALUES (14549, 23516, 495);
INSERT INTO `os_patent_agent_link` VALUES (14550, 23516, 500);
INSERT INTO `os_patent_agent_link` VALUES (14551, 23516, 551);
INSERT INTO `os_patent_agent_link` VALUES (14552, 23520, 495);
INSERT INTO `os_patent_agent_link` VALUES (14553, 23520, 500);
INSERT INTO `os_patent_agent_link` VALUES (14554, 23520, 551);
INSERT INTO `os_patent_agent_link` VALUES (14555, 23521, 495);
INSERT INTO `os_patent_agent_link` VALUES (14556, 23521, 500);
INSERT INTO `os_patent_agent_link` VALUES (14557, 23521, 551);
INSERT INTO `os_patent_agent_link` VALUES (14558, 23522, 495);
INSERT INTO `os_patent_agent_link` VALUES (14559, 23522, 500);
INSERT INTO `os_patent_agent_link` VALUES (14560, 23522, 551);
INSERT INTO `os_patent_agent_link` VALUES (14561, 23523, 495);
INSERT INTO `os_patent_agent_link` VALUES (14562, 23523, 500);
INSERT INTO `os_patent_agent_link` VALUES (14563, 23523, 551);
INSERT INTO `os_patent_agent_link` VALUES (14564, 23524, 495);
INSERT INTO `os_patent_agent_link` VALUES (14565, 23524, 500);
INSERT INTO `os_patent_agent_link` VALUES (14566, 23524, 551);
INSERT INTO `os_patent_agent_link` VALUES (14567, 23525, 495);
INSERT INTO `os_patent_agent_link` VALUES (14568, 23525, 500);
INSERT INTO `os_patent_agent_link` VALUES (14569, 23525, 551);
INSERT INTO `os_patent_agent_link` VALUES (14570, 23526, 495);
INSERT INTO `os_patent_agent_link` VALUES (14571, 23526, 500);
INSERT INTO `os_patent_agent_link` VALUES (14572, 23526, 551);
INSERT INTO `os_patent_agent_link` VALUES (14573, 23527, 495);
INSERT INTO `os_patent_agent_link` VALUES (14574, 23527, 500);
INSERT INTO `os_patent_agent_link` VALUES (14575, 23527, 551);
INSERT INTO `os_patent_agent_link` VALUES (14576, 23528, 495);
INSERT INTO `os_patent_agent_link` VALUES (14577, 23528, 500);
INSERT INTO `os_patent_agent_link` VALUES (14578, 23528, 551);
INSERT INTO `os_patent_agent_link` VALUES (14579, 23529, 495);
INSERT INTO `os_patent_agent_link` VALUES (14580, 23529, 500);
INSERT INTO `os_patent_agent_link` VALUES (14581, 23529, 551);
INSERT INTO `os_patent_agent_link` VALUES (14582, 23530, 495);
INSERT INTO `os_patent_agent_link` VALUES (14583, 23530, 500);
INSERT INTO `os_patent_agent_link` VALUES (14584, 23530, 551);
INSERT INTO `os_patent_agent_link` VALUES (14585, 23531, 495);
INSERT INTO `os_patent_agent_link` VALUES (14586, 23531, 500);
INSERT INTO `os_patent_agent_link` VALUES (14587, 23531, 551);
INSERT INTO `os_patent_agent_link` VALUES (14588, 23533, 495);
INSERT INTO `os_patent_agent_link` VALUES (14589, 23533, 500);
INSERT INTO `os_patent_agent_link` VALUES (14590, 23533, 551);
INSERT INTO `os_patent_agent_link` VALUES (14591, 23534, 495);
INSERT INTO `os_patent_agent_link` VALUES (14592, 23534, 500);
INSERT INTO `os_patent_agent_link` VALUES (14593, 23534, 551);
INSERT INTO `os_patent_agent_link` VALUES (14594, 23539, 541);
INSERT INTO `os_patent_agent_link` VALUES (14595, 23539, 562);
INSERT INTO `os_patent_agent_link` VALUES (14596, 23540, 495);
INSERT INTO `os_patent_agent_link` VALUES (14597, 23540, 500);
INSERT INTO `os_patent_agent_link` VALUES (14598, 23540, 551);
INSERT INTO `os_patent_agent_link` VALUES (14599, 23541, 495);
INSERT INTO `os_patent_agent_link` VALUES (14600, 23541, 500);
INSERT INTO `os_patent_agent_link` VALUES (14601, 23541, 551);
INSERT INTO `os_patent_agent_link` VALUES (14602, 23542, 495);
INSERT INTO `os_patent_agent_link` VALUES (14603, 23542, 500);
INSERT INTO `os_patent_agent_link` VALUES (14604, 23542, 551);
INSERT INTO `os_patent_agent_link` VALUES (14605, 23543, 539);
INSERT INTO `os_patent_agent_link` VALUES (14606, 23543, 541);
INSERT INTO `os_patent_agent_link` VALUES (14607, 23544, 539);
INSERT INTO `os_patent_agent_link` VALUES (14608, 23544, 541);
INSERT INTO `os_patent_agent_link` VALUES (14609, 23545, 495);
INSERT INTO `os_patent_agent_link` VALUES (14610, 23545, 500);
INSERT INTO `os_patent_agent_link` VALUES (14611, 23545, 551);
INSERT INTO `os_patent_agent_link` VALUES (14612, 23546, 496);
INSERT INTO `os_patent_agent_link` VALUES (14613, 23546, 497);
INSERT INTO `os_patent_agent_link` VALUES (14614, 23546, 498);
INSERT INTO `os_patent_agent_link` VALUES (14615, 23547, 542);
INSERT INTO `os_patent_agent_link` VALUES (14616, 23547, 543);
INSERT INTO `os_patent_agent_link` VALUES (14617, 23550, 495);
INSERT INTO `os_patent_agent_link` VALUES (14618, 23550, 500);
INSERT INTO `os_patent_agent_link` VALUES (14619, 23550, 551);
INSERT INTO `os_patent_agent_link` VALUES (14620, 23553, 563);
INSERT INTO `os_patent_agent_link` VALUES (14621, 23554, 495);
INSERT INTO `os_patent_agent_link` VALUES (14622, 23554, 500);
INSERT INTO `os_patent_agent_link` VALUES (14623, 23554, 551);
INSERT INTO `os_patent_agent_link` VALUES (14624, 23555, 495);
INSERT INTO `os_patent_agent_link` VALUES (14625, 23555, 500);
INSERT INTO `os_patent_agent_link` VALUES (14626, 23555, 551);
INSERT INTO `os_patent_agent_link` VALUES (14627, 23556, 559);
INSERT INTO `os_patent_agent_link` VALUES (14628, 23556, 560);
INSERT INTO `os_patent_agent_link` VALUES (14629, 23557, 541);
INSERT INTO `os_patent_agent_link` VALUES (14630, 23557, 562);
INSERT INTO `os_patent_agent_link` VALUES (14631, 23558, 495);
INSERT INTO `os_patent_agent_link` VALUES (14632, 23558, 500);
INSERT INTO `os_patent_agent_link` VALUES (14633, 23558, 551);
INSERT INTO `os_patent_agent_link` VALUES (14634, 23561, 503);
INSERT INTO `os_patent_agent_link` VALUES (14635, 23561, 558);
INSERT INTO `os_patent_agent_link` VALUES (14636, 23562, 541);
INSERT INTO `os_patent_agent_link` VALUES (14637, 23562, 562);
INSERT INTO `os_patent_agent_link` VALUES (14638, 23566, 495);
INSERT INTO `os_patent_agent_link` VALUES (14639, 23566, 500);
INSERT INTO `os_patent_agent_link` VALUES (14640, 23566, 551);
INSERT INTO `os_patent_agent_link` VALUES (14641, 23567, 495);
INSERT INTO `os_patent_agent_link` VALUES (14642, 23567, 500);
INSERT INTO `os_patent_agent_link` VALUES (14643, 23567, 551);
INSERT INTO `os_patent_agent_link` VALUES (14644, 23568, 559);
INSERT INTO `os_patent_agent_link` VALUES (14645, 23568, 560);
INSERT INTO `os_patent_agent_link` VALUES (14646, 23569, 495);
INSERT INTO `os_patent_agent_link` VALUES (14647, 23569, 500);
INSERT INTO `os_patent_agent_link` VALUES (14648, 23569, 551);
INSERT INTO `os_patent_agent_link` VALUES (14649, 23570, 495);
INSERT INTO `os_patent_agent_link` VALUES (14650, 23570, 500);
INSERT INTO `os_patent_agent_link` VALUES (14651, 23570, 551);
INSERT INTO `os_patent_agent_link` VALUES (14652, 23571, 495);
INSERT INTO `os_patent_agent_link` VALUES (14653, 23571, 500);
INSERT INTO `os_patent_agent_link` VALUES (14654, 23571, 551);
INSERT INTO `os_patent_agent_link` VALUES (14655, 23573, 495);
INSERT INTO `os_patent_agent_link` VALUES (14656, 23573, 500);
INSERT INTO `os_patent_agent_link` VALUES (14657, 23573, 551);
INSERT INTO `os_patent_agent_link` VALUES (14658, 23574, 495);
INSERT INTO `os_patent_agent_link` VALUES (14659, 23574, 500);
INSERT INTO `os_patent_agent_link` VALUES (14660, 23574, 551);
INSERT INTO `os_patent_agent_link` VALUES (14661, 23575, 541);
INSERT INTO `os_patent_agent_link` VALUES (14662, 23575, 562);
INSERT INTO `os_patent_agent_link` VALUES (14663, 23579, 495);
INSERT INTO `os_patent_agent_link` VALUES (14664, 23579, 500);
INSERT INTO `os_patent_agent_link` VALUES (14665, 23579, 551);
INSERT INTO `os_patent_agent_link` VALUES (14666, 23581, 495);
INSERT INTO `os_patent_agent_link` VALUES (14667, 23581, 500);
INSERT INTO `os_patent_agent_link` VALUES (14668, 23581, 551);
INSERT INTO `os_patent_agent_link` VALUES (14669, 23583, 541);
INSERT INTO `os_patent_agent_link` VALUES (14670, 23583, 562);
INSERT INTO `os_patent_agent_link` VALUES (14671, 23584, 541);
INSERT INTO `os_patent_agent_link` VALUES (14672, 23584, 562);
INSERT INTO `os_patent_agent_link` VALUES (14673, 23585, 495);
INSERT INTO `os_patent_agent_link` VALUES (14674, 23585, 500);
INSERT INTO `os_patent_agent_link` VALUES (14675, 23585, 551);
INSERT INTO `os_patent_agent_link` VALUES (14676, 23586, 495);
INSERT INTO `os_patent_agent_link` VALUES (14677, 23586, 500);
INSERT INTO `os_patent_agent_link` VALUES (14678, 23586, 551);
INSERT INTO `os_patent_agent_link` VALUES (14679, 23587, 495);
INSERT INTO `os_patent_agent_link` VALUES (14680, 23587, 500);
INSERT INTO `os_patent_agent_link` VALUES (14681, 23587, 551);
INSERT INTO `os_patent_agent_link` VALUES (14682, 23588, 495);
INSERT INTO `os_patent_agent_link` VALUES (14683, 23588, 500);
INSERT INTO `os_patent_agent_link` VALUES (14684, 23588, 551);
INSERT INTO `os_patent_agent_link` VALUES (14685, 23589, 495);
INSERT INTO `os_patent_agent_link` VALUES (14686, 23589, 500);
INSERT INTO `os_patent_agent_link` VALUES (14687, 23589, 551);
INSERT INTO `os_patent_agent_link` VALUES (14688, 23591, 495);
INSERT INTO `os_patent_agent_link` VALUES (14689, 23591, 500);
INSERT INTO `os_patent_agent_link` VALUES (14690, 23591, 551);
INSERT INTO `os_patent_agent_link` VALUES (14691, 23593, 503);
INSERT INTO `os_patent_agent_link` VALUES (14692, 23593, 558);
INSERT INTO `os_patent_agent_link` VALUES (14693, 23594, 495);
INSERT INTO `os_patent_agent_link` VALUES (14694, 23594, 500);
INSERT INTO `os_patent_agent_link` VALUES (14695, 23594, 551);
INSERT INTO `os_patent_agent_link` VALUES (14696, 23604, 495);
INSERT INTO `os_patent_agent_link` VALUES (14697, 23604, 500);
INSERT INTO `os_patent_agent_link` VALUES (14698, 23604, 551);
INSERT INTO `os_patent_agent_link` VALUES (14699, 23605, 495);
INSERT INTO `os_patent_agent_link` VALUES (14700, 23605, 500);
INSERT INTO `os_patent_agent_link` VALUES (14701, 23605, 551);
INSERT INTO `os_patent_agent_link` VALUES (14702, 23607, 495);
INSERT INTO `os_patent_agent_link` VALUES (14703, 23607, 500);
INSERT INTO `os_patent_agent_link` VALUES (14704, 23607, 551);
INSERT INTO `os_patent_agent_link` VALUES (14705, 23609, 495);
INSERT INTO `os_patent_agent_link` VALUES (14706, 23609, 500);
INSERT INTO `os_patent_agent_link` VALUES (14707, 23609, 551);
INSERT INTO `os_patent_agent_link` VALUES (14708, 23610, 495);
INSERT INTO `os_patent_agent_link` VALUES (14709, 23610, 500);
INSERT INTO `os_patent_agent_link` VALUES (14710, 23610, 551);
INSERT INTO `os_patent_agent_link` VALUES (14711, 23611, 495);
INSERT INTO `os_patent_agent_link` VALUES (14712, 23611, 500);
INSERT INTO `os_patent_agent_link` VALUES (14713, 23611, 551);
INSERT INTO `os_patent_agent_link` VALUES (14714, 23612, 495);
INSERT INTO `os_patent_agent_link` VALUES (14715, 23612, 500);
INSERT INTO `os_patent_agent_link` VALUES (14716, 23612, 551);
INSERT INTO `os_patent_agent_link` VALUES (14717, 23613, 564);
INSERT INTO `os_patent_agent_link` VALUES (14718, 23614, 565);
INSERT INTO `os_patent_agent_link` VALUES (14719, 23615, 566);
INSERT INTO `os_patent_agent_link` VALUES (14720, 23616, 495);
INSERT INTO `os_patent_agent_link` VALUES (14721, 23616, 500);
INSERT INTO `os_patent_agent_link` VALUES (14722, 23616, 551);
INSERT INTO `os_patent_agent_link` VALUES (14723, 23617, 503);
INSERT INTO `os_patent_agent_link` VALUES (14724, 23618, 503);
INSERT INTO `os_patent_agent_link` VALUES (14725, 23619, 567);
INSERT INTO `os_patent_agent_link` VALUES (14726, 23620, 495);
INSERT INTO `os_patent_agent_link` VALUES (14727, 23620, 500);
INSERT INTO `os_patent_agent_link` VALUES (14728, 23620, 551);
INSERT INTO `os_patent_agent_link` VALUES (14729, 23622, 567);
INSERT INTO `os_patent_agent_link` VALUES (14730, 23623, 495);
INSERT INTO `os_patent_agent_link` VALUES (14731, 23623, 500);
INSERT INTO `os_patent_agent_link` VALUES (14732, 23623, 551);
INSERT INTO `os_patent_agent_link` VALUES (14733, 24065, 617);
INSERT INTO `os_patent_agent_link` VALUES (14734, 24066, 618);
INSERT INTO `os_patent_agent_link` VALUES (14735, 24068, 619);
INSERT INTO `os_patent_agent_link` VALUES (14736, 24069, 620);
INSERT INTO `os_patent_agent_link` VALUES (14737, 24070, 621);
INSERT INTO `os_patent_agent_link` VALUES (14738, 24071, 622);
INSERT INTO `os_patent_agent_link` VALUES (14739, 24072, 623);
INSERT INTO `os_patent_agent_link` VALUES (14740, 24073, 624);
INSERT INTO `os_patent_agent_link` VALUES (14741, 24074, 625);
INSERT INTO `os_patent_agent_link` VALUES (14742, 24074, 626);
INSERT INTO `os_patent_agent_link` VALUES (14743, 24076, 627);
INSERT INTO `os_patent_agent_link` VALUES (14744, 24077, 628);
INSERT INTO `os_patent_agent_link` VALUES (14745, 24078, 629);
INSERT INTO `os_patent_agent_link` VALUES (14746, 24079, 630);
INSERT INTO `os_patent_agent_link` VALUES (14747, 24080, 629);
INSERT INTO `os_patent_agent_link` VALUES (14748, 24081, 631);
INSERT INTO `os_patent_agent_link` VALUES (14749, 24082, 632);
INSERT INTO `os_patent_agent_link` VALUES (14750, 24083, 633);
INSERT INTO `os_patent_agent_link` VALUES (14751, 24084, 634);
INSERT INTO `os_patent_agent_link` VALUES (14752, 24085, 635);
INSERT INTO `os_patent_agent_link` VALUES (14753, 24087, 636);
INSERT INTO `os_patent_agent_link` VALUES (14754, 24088, 637);
INSERT INTO `os_patent_agent_link` VALUES (14755, 24089, 636);
INSERT INTO `os_patent_agent_link` VALUES (14756, 24090, 630);
INSERT INTO `os_patent_agent_link` VALUES (14757, 24091, 630);
INSERT INTO `os_patent_agent_link` VALUES (14758, 24092, 636);
INSERT INTO `os_patent_agent_link` VALUES (14759, 24093, 636);

-- ----------------------------
-- Table structure for os_patent_annotation
-- ----------------------------
DROP TABLE IF EXISTS `os_patent_annotation`;
CREATE TABLE `os_patent_annotation`  (
  `id` int(0) NOT NULL AUTO_INCREMENT COMMENT 'ID',
  `patent_id` int(0) NULL DEFAULT NULL COMMENT '专利ID',
  `project_id` int(0) NULL DEFAULT NULL COMMENT '专题库ID',
  `content` longtext CHARACTER SET utf8mb4 COLLATE utf8mb4_0900_ai_ci NULL COMMENT '内容',
  `create_by` int(0) NULL DEFAULT NULL COMMENT '用户ID',
  `create_time` int(0) NULL DEFAULT NULL COMMENT '创建时间',
  PRIMARY KEY (`id`) USING BTREE
) ENGINE = InnoDB CHARACTER SET = utf8mb4 COLLATE = utf8mb4_0900_ai_ci COMMENT = '专利注释' ROW_FORMAT = Dynamic;

-- ----------------------------
-- Table structure for os_patent_applicant
-- ----------------------------
DROP TABLE IF EXISTS `os_patent_applicant`;
CREATE TABLE `os_patent_applicant`  (
  `id` int(0) UNSIGNED NOT NULL AUTO_INCREMENT COMMENT 'ID',
  `name` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '申请人名称',
  `bname` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '标准申请人名称',
  `remark` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT '255' COMMENT '备注',
  `uid` int(0) NULL DEFAULT 0 COMMENT '创建人id',
  `update_time` int(0) NULL DEFAULT 0 COMMENT '更新时间',
  `type` int(0) NULL DEFAULT 1 COMMENT '1.个人 2.企业 3.院校 4.科研机构',
  `country` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '国家',
  `city` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '省市县',
  `address` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '地址',
  `province_id` int(0) NULL DEFAULT 0 COMMENT '省ID',
  `city_id` int(0) NULL DEFAULT 0 COMMENT '市级ID',
  `area_id` int(0) NULL DEFAULT 0 COMMENT '地区关联表',
  `addr` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '地区简介',
  `merge` tinyint(0) NULL DEFAULT NULL COMMENT '是否合并',
  `project_id` int(0) NULL DEFAULT NULL COMMENT '所属专题库',
  PRIMARY KEY (`id`) USING BTREE,
  INDEX `id`(`id`) USING BTREE,
  INDEX `country`(`country`) USING BTREE,
  INDEX `province_id`(`province_id`) USING BTREE,
  INDEX `city_id`(`city_id`) USING BTREE,
  INDEX `area_id`(`area_id`) USING BTREE
) ENGINE = InnoDB AUTO_INCREMENT = 7140 CHARACTER SET = utf8 COLLATE = utf8_general_ci COMMENT = '专利信息申请人表' ROW_FORMAT = Dynamic;

-- ----------------------------
-- Records of os_patent_applicant
-- ----------------------------
INSERT INTO `os_patent_applicant` VALUES (6993, 'NEOMAXCO.,LTD.', '住友特殊金属株式会社', '255', 0, 1650432405, 2, 'JP', NULL, '4-7-19, Kitahama, Chuo-ku, Osaka, JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (6994, 'SANTOKUCORPORATION', '株式会社三德', '255', 0, 1650432405, 2, 'JP', NULL, 'Kobe, JP | Osaka, JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (6995, 'SUMITOMOSPECIALMETALSCO.LTD.', '住友特殊金属株式会社', '255', 0, 1650432405, 2, 'JP', NULL, 'Osaka,JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (6996, 'HITACHIMETALS,LTD.', '日立金属株式会社', '255', 0, 1650432405, 2, 'JP', NULL, '2-70, Konan 1-chome, Minato-ku, Tokyo,1088224 〒1088224 JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (6997, 'NEOMAXCO.,LTD', '住友特殊金属株式会社', '255', 0, 1650432406, 2, 'JP', NULL, 'Osaka, JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (6998, '住友金属鉱山株式会社', '住友金属鉱山株式会社', '255', 0, 1650432406, 2, 'JP', NULL, '東京都港区新橋5丁目11番3号', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (6999, '住友特殊金属株式会社', '住友特殊金属株式会社', '255', 0, 1650432405, 2, 'JP', NULL, '4-7-19, Kitahama, Chuo-ku, Osaka, JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7000, '日立金属株式会社', '日立金属株式会社', '255', 0, 1650432405, 2, 'JP', NULL, '東京都港区港南一丁目2番70号', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7001, '株式会社NEOMAX', '住友特殊金属株式会社', '255', 0, 1650432406, 2, 'JP', NULL, '大阪府大阪市中央区北浜4丁目7番19号', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7002, 'NEOMAX,CO.,LTD.', '住友特殊金属株式会社', '255', 0, 1650432406, 2, 'JP', NULL, 'Osaka, JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7003, 'SUMITOMOSPECIALMETALSCO.,LTD', '住友特殊金属株式会社', '255', 0, 1650432407, 2, 'JP', NULL, '4-7, 19, Kitahama, Chuo-ku, Osak-shi, Osaka, JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7004, 'SUMITOMOSPECIALMETALSCO.,LTD.', '住友特殊金属株式会社', '255', 0, 1650432408, 2, 'JP', NULL, '4-7-19, Kitahama, Chuo-ku,Osaka City, Osaka 541-0041,JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7005, '히타치긴조쿠가부시키가이샤', '日立金属株式会社', '255', 0, 1650432408, 2, 'JP', NULL, '일본국 도쿄토 미나토쿠 코난 *쵸메 *방 **고', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7006, 'NEOMAXCO.LTD.', '住友特殊金属株式会社', '255', 0, 1650432409, 2, 'JP', NULL, 'Osaka,JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7007, 'SUMITOMOSPECIALMETALSCOMPANYLIMITED', '住友特殊金属株式会社', '255', 0, 1650432409, 2, 'JP', NULL, '7-19, Kitahama 4-chome, Chuo-ku,Osaka-shi, Osaka 541-0041,JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7008, '八尾健', '八尾健', '255', 0, 1650432410, 1, 'JP', NULL, '大阪府大阪市中央区北浜4丁目7番19号 | 大阪府交野市郡津2丁目28番12号', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7009, 'NEOMAXCO,LTD', '住友特殊金属株式会社', '255', 0, 1650432410, 2, 'JP', NULL, 'Osaka 541-0041, JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7010, '大学共同利用機関法人高エネルギー加速器研究機構', '高能加速器研究所', '255', 0, 1650432411, 2, 'JP', NULL, '大阪府大阪市中央区北浜4丁目7番19号 | 茨城県つくば市大穂1番地1', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7011, 'インターメタリックス株式会社', '因太金屬股份有限公司', '255', 0, 1650432412, 2, 'JP', NULL, '岐阜県中津川市茄子川1642番地144 | 愛知県名古屋市東区東桜一丁目1番10号', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7012, '本田技研工業株式会社', '本田技研工业株式会社', '255', 0, 1650432412, 2, 'JP', NULL, '大阪府大阪市中央区北浜4丁目7番19号 | 東京都港区南青山二丁目1番1号', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7013, 'TDK株式会社', 'TDK株式会社', '255', 0, 1650432412, 2, 'JP', NULL, '東京都港区 | 東京都中央区', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7014, '昭和電工株式会社', '昭和电工株式会社', '255', 0, 1650432412, 2, 'JP', NULL, '大阪府大阪市中央区北浜4丁目7番19号 | 東京都港区芝大門1丁目13番9号', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7015, '独立行政法人理化学研究所', '理化学研究所', '255', 0, 1650432412, 4, 'JP', NULL, '東京都港区芝浦一丁目2番1号 | 埼玉県和光市広沢2番1号', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7016, 'RIKEN', '理化学研究所', '255', 0, 1650432412, 2, 'JP', NULL, 'Tokyo, JP | WAKO-SHI', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7017, 'DAIDOSTEELCO.,LTD.', '大同特殊钢株式会社', '255', 0, 1650432413, 2, 'JP', NULL, '1-10, HIGASHISAKURA 1-CHOME, HIGASHI-KU, NAGOYA-SHI,, 461-8581, AICHI, JAPAN', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7018, 'INTERMETALLICSCO.,LTD.', '因太金屬股份有限公司', '255', 0, 1650432413, 2, 'JP', NULL, 'Nakatsugawa-shi,JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7019, '大同特殊鋼株式会社', '大同特殊钢株式会社', '255', 0, 1650432414, 2, 'JP', NULL, '愛知県名古屋市', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7020, 'ユシロ化学工業株式会社', '油脂臘化學工業股份有限公司', '255', 0, 1650432414, 2, 'JP', NULL, '東京都港区芝浦一丁目2番1号 | 東京都大田区千鳥2丁目34番16号', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7021, 'HITACHIMETALSLTD.', '日立金属株式会社', '255', 0, 1650432414, 2, 'JP', NULL, 'Tokyo,JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7022, 'HITACHIMETALS,LIMITED', '日立金属株式会社', '255', 0, 1650432415, 2, 'JP', NULL, '2-1, SHIBAURA 1-CHOME MINATO-KU TOKYO 105-8614 JAPON, JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7023, '히다찌긴조꾸가부시끼가이사', '日立金属株式会社', '255', 0, 1650432415, 2, 'JP', NULL, '*-**, Konan *-chome, Minato-ku, Tokyo, Japan', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7024, '株式会社日立メタルプレシジョン', '株式会社安来制作所', '255', 0, 1650432416, 2, 'JP', NULL, '東京都港区芝浦一丁目2番1号', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7025, 'NEOMAXエンジニアリング株式会社', 'NEOMAXエンジニアリング', '255', 0, 1650432416, 2, 'JP', NULL, '東京都港区 | 群馬県高崎市', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7026, 'NEOMAX機工株式会社', 'NEOMAX机工株式会社', '255', 0, 1650432416, 2, 'JP', NULL, '東京都港区芝浦一丁目2番1号 | 群馬県多野郡吉井町多比良2977番地', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7027, '日本ペイント株式会社', '日本油漆株式会社', '255', 0, 1650432416, 2, 'JP', NULL, '東京都港区芝浦一丁目2番1号 | 大阪府大阪市北区大淀北2丁目1番2号', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7028, 'KIKUGAWA,ATSUSHI', 'KIKUGAWAATSUSHI', '255', 0, 1650432416, 2, 'JP', NULL, 'Osaka,JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7029, 'SAKASHITA,SHINICHIRO', 'SAKASHITASHINICHIRO', '255', 0, 1650432416, 2, 'JP', NULL, 'Osaka,JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7030, '인터메탈릭스가부시키가이샤', '因太金屬股份有限公司', '255', 0, 1650432417, 2, 'JP', NULL, '일본국 기후켄 나카츠가와시 나스비가와 ****반치 *** | 일본, 아이치켄, 나고야시, 히가시쿠, 히가시사쿠라 *-*-**', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7031, '三菱商事株式会社', '三菱商事株式会社', '255', 0, 1650432417, 2, 'JP', NULL, 'Kyoto-shi, Kyoto, JP | Tokyo, JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7032, 'HITACHIMETALS,LTD', '日立金属株式会社', '255', 0, 1650432419, 2, 'JP', NULL, 'Tokyo,JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7033, 'MITSUBISHICORPORATION', '三菱商事株式会社', '255', 0, 1650432419, 2, 'JP', NULL, 'Kyoto-shi, Kyoto, JP | Tokyo, JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7034, '岩谷瓦斯株式会社', '岩谷产业株式会社', '255', 0, 1650432421, 2, 'JP', NULL, '京都府京都市西京区御陵大原1番地36 | 東京都港区西新橋3丁目21番8号', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7035, '日本科学冶金株式会社', '日本科学冶金株式会社', '255', 0, 1650432421, 2, 'JP', NULL, '東京都港区芝浦一丁目2番1号 | 大阪府寝屋川市大成町13番3号', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7036, 'NATSUMEDA,MITSUTOSHI', 'NATSUMEDAMITSUTOSHI', '255', 0, 1650432424, 2, 'JP', NULL, 'Osaka,JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7037, 'ITATANI,OSAMU', 'ITATANIOSAMU', '255', 0, 1650432425, 2, 'JP', NULL, 'Kyoto-shi, JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7038, 'SAGAWA,MASATO', 'SAGAWAMASATO', '255', 0, 1650432425, 2, 'JP', NULL, 'Kyoto-shi, JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7039, '国立研究開発法人物質·材料研究機構', '独立行政法人物质·材料研究机构', '255', 0, 1650432425, 2, 'JP', NULL, '茨城県つくば市 | 東京都港区', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7040, '独立行政法人物質·材料研究機構', '独立行政法人物质·材料研究机构', '255', 0, 1650432425, 2, 'JP', NULL, '茨城県つくば市千現一丁目2番地1 | 東京都港区芝浦一丁目2番1号', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7041, 'FUJIHARA,MAHORO', 'FUJIHARAMAHORO', '255', 0, 1650432425, 2, 'JP', NULL, 'Mishima-gun, JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7042, 'YOSHIMURA,KOSHI', 'YOSHIMURAKOSHI', '255', 0, 1650432425, 2, 'JP', NULL, 'Saitama,JP | Hyogo,JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7043, 'KUNIYOSHI,FUTOSHI', 'KUNIYOSHIFUTOSHI', '255', 0, 1650432425, 2, 'JP', NULL, 'Osaka,JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7044, 'NAKAYAMA,SHOHJI', 'NAKAYAMASHOHJI', '255', 0, 1650432425, 2, 'JP', NULL, 'Mishima-gun,JP | Kumagaya-shi,JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7045, 'OBATA,TOHRU', 'OBATATOHRU', '255', 0, 1650432426, 2, 'JP', NULL, 'Yabu-shi,JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7046, 'YOSHIDA,TAKESHI', 'YOSHIDATAKESHI', '255', 0, 1650432426, 2, 'JP', NULL, 'Kumagaya-shi,JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7047, 'SHINDOH,MIKIO', 'SHINDOHMIKIO', '255', 0, 1650432426, 2, 'JP', NULL, 'Kumagaya-shi,JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7048, 'KAMACHI,MASANAO', 'KAMACHIMASANAO', '255', 0, 1650432426, 2, 'JP', NULL, 'Saitama,JP | Hyogo,JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7049, 'ISOZAKI,TAKAHIRO', 'ISOZAKITAKAHIRO', '255', 0, 1650432426, 2, 'JP', NULL, 'Saitama,JP | Hyogo,JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7050, 'MOCHIZUKI,MITSUAKI', 'MOCHIZUKIMITSUAKI', '255', 0, 1650432426, 2, 'JP', NULL, 'Saitama,JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7051, 'NAKAYAMA,SHOJI', 'NAKAYAMASHOJI', '255', 0, 1650432426, 2, 'JP', NULL, 'Saitama,JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7052, 'SONODA,KAZUHIRO', 'SONODAKAZUHIRO', '255', 0, 1650432426, 2, 'JP', NULL, 'Saitama,JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7053, 'FURUSAWA,KATSUYOSHI', 'FURUSAWAKATSUYOSHI', '255', 0, 1650432427, 2, 'JP', NULL, 'Osaka,JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7054, 'HOSHI,HIROYUKI', 'HOSHIHIROYUKI', '255', 0, 1650432427, 2, 'JP', NULL, 'Osaka,JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7055, 'INTERMETALLICSCO.,LTD', '因太金屬股份有限公司', '255', 0, 1650432428, 2, 'JP', NULL, 'Nakatsugawa-shi,, Gifu,JP | Nagoya-shi, Aichi,JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7056, 'INTERMETALLICSCO.LTD.', '因太金屬股份有限公司', '255', 0, 1650432428, 2, 'JP', NULL, '1642-144 Nasubigawa,Nakatsugawa-shi, Gifu 509-9132,JP | 1-10, Higashisakura 1-chome Higashi-ku,Nagoya-shi, Aichi 461-8581,JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7057, 'FUJIMOTO,NAOKI', 'FUJIMOTONAOKI', '255', 0, 1650432429, 2, 'JP', NULL, 'Kyoto-shi, JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7058, '다이도토쿠슈코카부시키가이샤', '大同特殊钢株式会社', '255', 0, 1650432431, 2, 'JP', NULL, '일본국 기후켄 나카츠가와시 나스비가와 ****반치 *** | 일본, 아이치켄, 나고야시, 히가시쿠, 히가시사쿠라 *-*-**', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7059, 'NDFEB株式会社', '钕铁硼株式会社', '255', 0, 1650432432, 2, 'JP', NULL, '京都府京都市', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7060, '엔디에프이비코포레이션', '钕铁硼株式会社', '255', 0, 1650432434, 2, 'JP', NULL, '***, Kyodai Katsura Venture Plaza N., *-**, Ohara, Goryo, Nishikyo-ku, Kyoto-shi, Kyoto *******, Japan', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7061, 'NDFEBCORPORATION', '钕铁硼株式会社', '255', 0, 1650432434, 2, 'JP', NULL, 'Kyoto-shi, Kyoto, JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7062, 'NDFEBCORP.', '钕铁硼株式会社', '255', 0, 1650432434, 2, 'JP', NULL, 'Kyoto, JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7063, 'パレス化学株式会社', '帕萊斯化學股份有限公司', '255', 0, 1650432435, 2, 'JP', NULL, '神奈川県横浜市 | 東京都港区', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7064, '国立大学法人東北大学', '东北大学(日本)', '255', 0, 1650432436, 3, 'JP', NULL, '宮城県仙台市青葉区片平二丁目1番1号 | 東京都港区新橋5丁目11番3号', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7065, 'ハード工業有限会社', '哈都工业有限会社', '255', 0, 1650432440, 2, 'JP', NULL, '青森県八戸市沼館三丁目2-18 | 東京都港区港南一丁目2番70号', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7066, 'HARDINDUSTRYYUGENKAISHA', '哈都工业有限会社', '255', 0, 1650432440, 2, 'JP', NULL, 'Hachinohe-shi, Aomori, JP | Minato-ku, Tokyo, JP', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7067, 'NEOPERFORMANCEMATERIALS(SINGAPORE)PTE.LTD.', '尼奥性能材料(新加坡)有限公司', '255', 0, 1650432442, 2, 'SG | CN', NULL, '61 Science Park Road,#01-19 Galen,Singapore 117525 SG | No. 19 Quanzhou Road,,Wuqing Development Area,,Tianjin 301700 CN', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7068, 'MAGNEQUENCHTIANJINCO.,LTD.', 'MAGNEQUENCHTIANJINCOLTD', '255', 0, 1650432442, 2, 'SG | CN', NULL, '61 Science Park Road,#01-19 Galen,Singapore 117525 SG | No. 19 Quanzhou Road,,Wuqing Development Area,,Tianjin 301700 CN', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7069, '마그네퀸치톈진컴퍼니리미티드', '마그네퀸치톈진컴퍼니리미티드', '255', 0, 1650432442, 2, 'SG | CN', NULL, '싱가포르 싱가포르 117525 사이언스 파크 2 더 갈렌 넘버 01-19 사이언스 파크로드 61 | 중국, 톈진 301700, 우칭 디벨롭먼트 에어리어, 넘버 19 취안저우 로드', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7070, '네오퍼포먼스메터리얼즈(싱가포르)프라이베이트리미티드', '尼奥性能材料(新加坡)有限公司', '255', 0, 1650432442, 2, 'SG | CN', NULL, '싱가포르 싱가포르 117525 사이언스 파크 2 더 갈렌 넘버 01-19 사이언스 파크로드 61 | 중국, 톈진 301700, 우칭 디벨롭먼트 에어리어, 넘버 19 취안저우 로드', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7071, '佐川真人', '佐川真人', '', 26, 1650533406, 1, 'JP', NULL, NULL, 0, 0, 0, NULL, 1, 80);
INSERT INTO `os_patent_applicant` VALUES (7072, '麦格昆磁', '', '', 26, 1650531828, 1, 'US', NULL, NULL, 0, 0, 0, NULL, 1, 80);
INSERT INTO `os_patent_applicant` VALUES (7073, '日立金属', '', '', 26, 1650533196, 1, 'JP', NULL, NULL, 0, 0, 0, NULL, 1, 80);
INSERT INTO `os_patent_applicant` VALUES (7074, '住友', '', '', 26, 1650533493, 1, 'JP', NULL, NULL, 0, 0, 0, NULL, 1, 80);
INSERT INTO `os_patent_applicant` VALUES (7083, '深圳市华星光电技术有限公司', 'TCL华星光电技术有限公司', '255', 0, 1651832283, 2, 'CN', NULL, '518132 广东省深圳市光明新区塘明大道9-2号', 1933, 1957, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7084, '武汉华星光电技术有限公司', '武汉华星光电技术有限公司', '255', 0, 1651832284, 2, 'CN', NULL, '430079 湖北省武汉市东湖开发区高新大道666号生物城C5栋', 1679, 1680, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7085, 'TCL华星光电技术有限公司', 'TCL华星光电技术有限公司', '255', 0, 1651832283, 2, 'CN', NULL, '518132 广东省深圳市光明新区塘明大道9-2号', 1933, 1957, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7086, '深圳市华星光电半导体显示技术有限公司', '深圳市华星光电半导体显示技术有限公司', '255', 0, 1651832286, 2, 'CN', NULL, '518132 广东省深圳市光明新区公明街道塘明大道9-2号', 1933, 1957, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7087, '武汉华星光电半导体显示技术有限公司', '武汉华星光电半导体显示技术有限公司', '255', 0, 1651832286, 2, 'CN', NULL, '430079 湖北省武汉市东湖新技术开发区高新大道666号光谷生物创新园C5栋305室', 1679, 1680, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7088, '惠州市华星光电技术有限公司', '惠州华星光电显示有限公司', '255', 0, 1651832288, 2, 'CN', NULL, '516006 广东省惠州市仲恺高新技术产业开发区惠风四路78号TCL液晶产业园D栋 (广东,惠州,惠城区)', 1933, 2018, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7089, '惠州华星光电显示有限公司', '惠州华星光电显示有限公司', '255', 0, 1651832288, 2, 'CN', NULL, '516000 广东省惠州市仲恺高新区陈江街道华星大道6号模组厂房A一楼', 1933, 2018, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7090, '广东聚华印刷显示技术有限公司', '广东聚华印刷显示技术有限公司', '255', 0, 1651832316, 2, 'CN', NULL, '510000 广东省广州市广州中新广州知识城凤凰三路17号自编五栋388', 1933, 1934, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7091, 'TCL科技集团股份有限公司', 'TCL科技集团股份有限公司', '255', 0, 1651832316, 2, 'CN', NULL, '510000 广东省广州市广州中新广州知识城凤凰三路17号自编五栋388', 1933, 1934, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7100, '张春雨', '张春雨', '255', 0, 1652337197, 1, 'CN', NULL, '563000 贵州省遵义市汇川区杭州路西湖大楼9号楼7层1号 (贵州,遵义,汇川区)', 2476, 2493, 2495, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7101, '测试233', '张三', '255', 0, 1652337197, 2, 'CN', NULL, '563000 贵州省遵义市汇川区杭州路西湖大楼9号楼7层1号 (贵州,遵义,汇川区1)', 2476, 2493, 2495, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7102, '东莞烨嘉电子科技有限公司', '东莞烨嘉电子科技有限公司', '255', 0, 1652337199, 2, 'CN', NULL, '523710 广东省东莞市塘厦镇龙背岭村龙埔路2号B栋', 1933, 2059, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7103, '优品优家(深圳)科技有限公司', '优品优家(深圳)科技有限公司', '255', 0, 1652337199, 2, 'CN', NULL, '518131 广东省深圳市龙华区民治街道上芬社区布龙路与人民路交汇处恒江大厦1201 (广东,深圳,龙华区)', 1933, 1957, 1964, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7104, '北京大学口腔医学院', '北京大学口腔医学院', '255', 0, 1652337200, 3, 'CN', NULL, '100081 北京市海淀区中关村南大街22号 (北京,北京,海淀区)', 2, 3, 9, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7105, '赫比(上海)家用电器产品有限公司', '赫比(上海)家用电器产品有限公司', '255', 0, 1652337200, 2, 'CN', NULL, '201323 上海市浦东新区金闻路79号和77号1、3幢、2幢1F2F；102号1幢1楼A、2楼、3楼A和100号1幢1F2F、2幢1F (上海,上海,浦东新区)', 790, 791, 802, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7106, '深圳市柏斯曼电子科技股份有限公司', '深圳市柏斯曼电子科技股份有限公司', '255', 0, 1652337201, 2, 'CN', NULL, '518000 广东省深圳市宝安区福永街道凤凰第二工业区工业园C幢第三层B、第四层 (广东,深圳,宝安区)', 1933, 1957, 1961, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7107, '东莞市茗创优尚电子科技有限公司', '东莞市茗创优尚电子科技有限公司', '255', 0, 1652337201, 2, 'CN', NULL, '523000 广东省东莞市凤岗镇官井头村银井路四号A栋二楼', 1933, 2059, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7108, '安徽信成泵阀有限公司', '安徽信成泵阀有限公司', '255', 0, 1652337202, 2, 'CN', NULL, '239300 安徽省滁州市天长市城东工业园区 (安徽,滁州,天长市)', 1019, 1091, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7109, '洛阳泽天石化配件有限公司', '洛阳泽天石化配件有限公司', '255', 0, 1652337202, 2, 'CN', NULL, '471000 河南省洛阳市吉利区科技园道南路 (河南,洛阳,吉利区)', 1503, 1527, 1532, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7110, '深圳市海纳思科技术有限公司', '深圳市海纳思科技术有限公司', '255', 0, 1652337202, 2, 'CN', NULL, '518000 广东省深圳市龙华区大浪街道时尚创意城奔霓诗工业园C栋2楼 (广东,深圳,龙华区)', 1933, 1957, 1964, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7111, '南平市佳创机电科技有限公司', '南平市佳创机电科技有限公司', '255', 0, 1652337202, 2, 'CN', NULL, '353000 福建省南平市延平区东溪路121号1幢1层1-7轴 (福建,南平,延平区)', 1141, 1207, 1208, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7112, '上海携福电器有限公司', '上海携福电器有限公司', '255', 0, 1652337203, 2, 'CN', NULL, '201506 上海市金山区金山工业区金百路489号 (上海,上海,金山区)', 790, 791, 803, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7113, '月立集团有限公司', '月立集团有限公司', '255', 0, 1652337203, 2, 'CN', NULL, '315300 浙江省宁波市慈溪市周巷镇开发东路999号 (浙江,宁波,慈溪市)', 918, 933, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7114, '浙江月立电器有限公司', '月立集团有限公司', '255', 0, 1652337203, 2, 'CN', NULL, '315000 浙江省宁波市慈溪市周巷镇开发东路999号', 918, 933, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7115, '上海飞象健康科技有限公司', '上海飞象健康科技有限公司', '255', 0, 1652337203, 2, 'CN', NULL, '201100 上海市闵行区虹莘路3999号712室 (上海,上海,闵行区)', 790, 791, 799, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7116, '深圳素士科技股份有限公司', '深圳素士科技股份有限公司', '255', 0, 1652337203, 2, 'CN', NULL, '518000 广东省深圳市南山区桃源街道福光社区留仙大道3370号南山智园崇文园区2号楼1101、1102、1103、1104室及401、402室 (广东,深圳,南山区)', 1933, 1957, 1960, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7117, '珠海大拇指创新科技有限公司', '珠海大拇指创新科技有限公司', '255', 0, 1652337204, 2, 'CN', NULL, '519000 广东省珠海市香洲区南屏科技工业园屏东三路12号厂房五二层 (广东,珠海,香洲区)', 1933, 1967, 1968, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7118, '深圳市飞猫电器有限公司', '深圳市飞猫电器有限公司', '255', 0, 1652337204, 2, 'CN', NULL, '518000 广东省深圳市宝安区沙井街道共和社区先裕兴工业园第四栋 (广东,深圳,宝安区)', 1933, 1957, 1961, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7119, '深圳市耐菲尔医疗器械科技有限公司', '深圳市耐菲尔医疗器械科技有限公司', '255', 0, 1652337204, 2, 'CN', NULL, '518101 广东省深圳市宝安区沙井街道共和社区福和路先裕兴工业园第六栋二层至四层', 1933, 1957, 1961, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7120, '深圳市胜祥丰科技有限公司', '深圳市胜祥丰科技有限公司', '255', 0, 1652337204, 2, 'CN', NULL, '518000 广东省深圳市宝安区松岗街道松岗社区山美新区64号101 (广东,深圳,宝安区)', 1933, 1957, 1961, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7121, '深圳市力博得科技有限公司', '深圳市力博得科技有限公司', '255', 0, 1652337205, 2, 'CN', NULL, '518000 广东省深圳市宝安区西乡街道劳动社区宝源路1065号F518时尚创意园F3栋3层301、302、303、304 (广东,深圳,宝安区)', 1933, 1957, 1961, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7122, '新疆医科大学第一附属医院', '新疆医科大学第一附属医院', '255', 0, 1652337205, 2, 'CN', NULL, '830000 新疆维吾尔自治区乌市新市区鲤鱼山路1号 (新疆,乌鲁木齐,新市区)', 0, 0, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7123, '郑自顯', '郑自显', '255', 0, 1652337205, 1, 'CN', NULL, '350212 福建省福州市长乐市湖南镇闽鹏村下郑54号 (福建,福州,长乐区)', 1141, 1142, 0, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7124, '深圳市裕欣源电子科技有限公司', '深圳市裕欣源电子科技有限公司', '255', 0, 1652337205, 2, 'CN', NULL, '518000 广东省深圳市龙华区观澜街道库坑社区同富裕工业区28号华朗嘉工业园2号301 (广东,深圳,龙华区)', 1933, 1957, 1964, NULL, 0, NULL);
INSERT INTO `os_patent_applicant` VALUES (7125, '111', '', '', 1, 1652919259, 1, '', NULL, NULL, 0, 0, 0, NULL, 1, 83);
INSERT INTO `os_patent_applicant` VALUES (7126, '222', '', '', 1, 1652919278, 1, '', NULL, NULL, 0, 0, 0, NULL, 1, 83);
INSERT INTO `os_patent_applicant` VALUES (7127, '333', '', '', 1, 1652919287, 1, '', NULL, NULL, 0, 0, 0, NULL, 1, 83);

-- ----------------------------
-- Table structure for os_patent_field
-- ----------------------------
DROP TABLE IF EXISTS `os_patent_field`;
CREATE TABLE `os_patent_field`  (
  `id` int(0) UNSIGNED NOT NULL AUTO_INCREMENT COMMENT 'ID',
  `name` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT '' COMMENT '自定义字段名称',
  `ptype` int(0) NOT NULL DEFAULT 1 COMMENT '1.是标引 2.是分类',
  `type` tinyint(1) NULL DEFAULT 1 COMMENT '字段类型',
  `cid` int(0) NULL DEFAULT NULL COMMENT '创建人账户ID',
  `createtime` int(0) NULL DEFAULT 0 COMMENT '创建时间',
  `status` tinyint(1) NULL DEFAULT 1 COMMENT '状态（正常、关闭）',
  `remark` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT '' COMMENT '备注',
  `project_id` int(0) NULL DEFAULT NULL COMMENT '所属专题库',
  PRIMARY KEY (`id`) USING BTREE
) ENGINE = InnoDB AUTO_INCREMENT = 4652 CHARACTER SET = utf8 COLLATE = utf8_general_ci COMMENT = '专利信息自定义字段表' ROW_FORMAT = Dynamic;

-- ----------------------------
-- Records of os_patent_field
-- ----------------------------
INSERT INTO `os_patent_field` VALUES (4562, '技术分类1', 1, 5, 1, 1651917335, 1, '', 80);
INSERT INTO `os_patent_field` VALUES (4563, '技术分类2', 1, 5, 1, 1651917336, 1, '', 80);
INSERT INTO `os_patent_field` VALUES (4564, '欧洲指定国', 1, 5, 1, 1651917337, 1, '', 80);
INSERT INTO `os_patent_field` VALUES (4565, '解决问题', 1, 2, 1, 1651917338, 1, '', 80);
INSERT INTO `os_patent_field` VALUES (4566, '相关性', 1, 5, 1, 1651917339, 1, '', 80);
INSERT INTO `os_patent_field` VALUES (4567, '技术功效', 1, 2, 1, 1651917340, 1, '', 80);
INSERT INTO `os_patent_field` VALUES (4580, '技术问题', 1, 2, 1, 1652136392, 1, '', 83);
INSERT INTO `os_patent_field` VALUES (4581, '技术手段', 1, 2, 1, 1652136393, 1, '', 83);
INSERT INTO `os_patent_field` VALUES (4582, '技术功效', 1, 2, 1, 1652136393, 1, '', 83);
INSERT INTO `os_patent_field` VALUES (4583, '重要技术点', 1, 5, 1, 1652136393, 1, '', 83);
INSERT INTO `os_patent_field` VALUES (4584, '备注', 1, 2, 1, 1652136393, 1, '', 83);
INSERT INTO `os_patent_field` VALUES (4625, '111111111111111111111111111111111111111', 1, 2, 1, 1652868069, 1, '', 80);
INSERT INTO `os_patent_field` VALUES (4626, '测试', 2, 6, 1, 1652913903, 1, '', 83);
INSERT INTO `os_patent_field` VALUES (4649, '单选', 1, 4, 1, 1654732019, 1, '', 128);
INSERT INTO `os_patent_field` VALUES (4650, '文本', 1, 2, 1, 1654732019, 1, '', 128);
INSERT INTO `os_patent_field` VALUES (4651, '树', 2, 6, 1, 1654732019, 1, '', 128);

-- ----------------------------
-- Table structure for os_patent_field_multiple
-- ----------------------------
DROP TABLE IF EXISTS `os_patent_field_multiple`;
CREATE TABLE `os_patent_field_multiple`  (
  `id` int(0) UNSIGNED NOT NULL AUTO_INCREMENT COMMENT 'ID',
  `name` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT '' COMMENT '多选选项名称',
  `cid` int(0) NULL DEFAULT NULL COMMENT '自定义字段ID',
  PRIMARY KEY (`id`) USING BTREE,
  INDEX `id`(`id`) USING BTREE,
  INDEX `cid`(`cid`) USING BTREE
) ENGINE = InnoDB AUTO_INCREMENT = 2820 CHARACTER SET = utf8 COLLATE = utf8_general_ci COMMENT = '自定义字段多选关联表' ROW_FORMAT = Dynamic;

-- ----------------------------
-- Records of os_patent_field_multiple
-- ----------------------------
INSERT INTO `os_patent_field_multiple` VALUES (2462, '产品', 4562);
INSERT INTO `os_patent_field_multiple` VALUES (2463, '制备工艺', 4562);
INSERT INTO `os_patent_field_multiple` VALUES (2464, '设备', 4562);
INSERT INTO `os_patent_field_multiple` VALUES (2465, '应用', 4562);
INSERT INTO `os_patent_field_multiple` VALUES (2466, '合金材料', 4563);
INSERT INTO `os_patent_field_multiple` VALUES (2467, '磁体', 4563);
INSERT INTO `os_patent_field_multiple` VALUES (2468, '熔炼铸片', 4563);
INSERT INTO `os_patent_field_multiple` VALUES (2469, '晶界扩散', 4563);
INSERT INTO `os_patent_field_multiple` VALUES (2470, '无重稀土钕铁硼', 4563);
INSERT INTO `os_patent_field_multiple` VALUES (2471, '磁场取向与压型', 4563);
INSERT INTO `os_patent_field_multiple` VALUES (2472, '制程设备', 4563);
INSERT INTO `os_patent_field_multiple` VALUES (2473, '机械加工', 4563);
INSERT INTO `os_patent_field_multiple` VALUES (2474, '制粉混料', 4563);
INSERT INTO `os_patent_field_multiple` VALUES (2475, '表面处理', 4563);
INSERT INTO `os_patent_field_multiple` VALUES (2476, '回收利用', 4563);
INSERT INTO `os_patent_field_multiple` VALUES (2477, '氢碎', 4563);
INSERT INTO `os_patent_field_multiple` VALUES (2478, '应用-二级', 4563);
INSERT INTO `os_patent_field_multiple` VALUES (2479, '充磁', 4563);
INSERT INTO `os_patent_field_multiple` VALUES (2480, '烧结回火', 4563);
INSERT INTO `os_patent_field_multiple` VALUES (2481, '质量检测', 4563);
INSERT INTO `os_patent_field_multiple` VALUES (2482, '检测设备', 4563);
INSERT INTO `os_patent_field_multiple` VALUES (2483, '配料计算与称料', 4563);
INSERT INTO `os_patent_field_multiple` VALUES (2484, '低硼高镓工艺', 4563);
INSERT INTO `os_patent_field_multiple` VALUES (2485, '其它-制备工艺', 4563);
INSERT INTO `os_patent_field_multiple` VALUES (2486, '扩散源', 4563);
INSERT INTO `os_patent_field_multiple` VALUES (2487, '德国（DE）', 4564);
INSERT INTO `os_patent_field_multiple` VALUES (2488, '西班牙（ES)', 4564);
INSERT INTO `os_patent_field_multiple` VALUES (2489, '意大利（IT）', 4564);
INSERT INTO `os_patent_field_multiple` VALUES (2490, '捷克(CZ)', 4564);
INSERT INTO `os_patent_field_multiple` VALUES (2491, '匈牙利（HU）', 4564);
INSERT INTO `os_patent_field_multiple` VALUES (2492, '波兰（PL）', 4564);
INSERT INTO `os_patent_field_multiple` VALUES (2493, '罗马尼亚（RO）', 4564);
INSERT INTO `os_patent_field_multiple` VALUES (2494, '葡萄牙（PT）', 4564);
INSERT INTO `os_patent_field_multiple` VALUES (2495, '斯诺文尼亚（SI）', 4564);
INSERT INTO `os_patent_field_multiple` VALUES (2496, '相关', 4566);
INSERT INTO `os_patent_field_multiple` VALUES (2497, '高关联-开发确认', 4566);
INSERT INTO `os_patent_field_multiple` VALUES (2498, '低关联-仅在JP布局', 4566);
INSERT INTO `os_patent_field_multiple` VALUES (2499, '低关联-开发确认', 4566);
INSERT INTO `os_patent_field_multiple` VALUES (2576, '像素电路', 4583);
INSERT INTO `os_patent_field_multiple` VALUES (2577, '高PPI(高分辨率）', 4583);
INSERT INTO `os_patent_field_multiple` VALUES (2578, '透明显示', 4583);
INSERT INTO `os_patent_field_multiple` VALUES (2579, '柔性/可挠', 4583);
INSERT INTO `os_patent_field_multiple` VALUES (2580, '低功耗', 4583);
INSERT INTO `os_patent_field_multiple` VALUES (2581, '高集成', 4583);
INSERT INTO `os_patent_field_multiple` VALUES (2582, '无缝拼接（拼接暗线改善）', 4583);
INSERT INTO `os_patent_field_multiple` VALUES (2583, '无边框', 4583);
INSERT INTO `os_patent_field_multiple` VALUES (2584, '不同背板驱动技术相关', 4583);
INSERT INTO `os_patent_field_multiple` VALUES (2585, '色转换', 4583);
INSERT INTO `os_patent_field_multiple` VALUES (2586, '封装/封胶', 4583);
INSERT INTO `os_patent_field_multiple` VALUES (2817, '测试2', 4649);
INSERT INTO `os_patent_field_multiple` VALUES (2818, '选项1', 4649);
INSERT INTO `os_patent_field_multiple` VALUES (2819, '选项2', 4649);

-- ----------------------------
-- Table structure for os_patent_field_patent_link
-- ----------------------------
DROP TABLE IF EXISTS `os_patent_field_patent_link`;
CREATE TABLE `os_patent_field_patent_link`  (
  `id` int(0) NOT NULL AUTO_INCREMENT COMMENT 'ID',
  `fid` int(0) NOT NULL COMMENT '选项ID',
  `cid` int(0) NOT NULL COMMENT '字段ID',
  `type` int(0) NOT NULL DEFAULT 0 COMMENT '选项类型',
  `pid` int(0) NOT NULL COMMENT '专利id',
  `tid` int(0) NOT NULL COMMENT '专题库id',
  `tpath` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '树父级路径 / 分割',
  `uid` int(0) NOT NULL COMMENT '操作人',
  PRIMARY KEY (`id`) USING BTREE,
  INDEX `fid`(`fid`) USING BTREE,
  INDEX `cid`(`cid`) USING BTREE,
  INDEX `pid`(`pid`) USING BTREE,
  INDEX `tid`(`tid`) USING BTREE
) ENGINE = InnoDB AUTO_INCREMENT = 278648 CHARACTER SET = utf8 COLLATE = utf8_general_ci COMMENT = '标引内容关联专利' ROW_FORMAT = Dynamic;

-- ----------------------------
-- Records of os_patent_field_patent_link
-- ----------------------------
INSERT INTO `os_patent_field_patent_link` VALUES (235082, 2462, 4562, 5, 22747, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235083, 2462, 4562, 5, 22748, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235084, 2462, 4562, 5, 22753, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235085, 2462, 4562, 5, 22757, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235086, 2462, 4562, 5, 22760, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235087, 2462, 4562, 5, 22761, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235088, 2462, 4562, 5, 22769, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235089, 2462, 4562, 5, 22772, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235090, 2462, 4562, 5, 22778, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235091, 2462, 4562, 5, 22789, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235092, 2462, 4562, 5, 22790, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235093, 2462, 4562, 5, 22791, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235094, 2462, 4562, 5, 22793, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235095, 2462, 4562, 5, 22794, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235096, 2462, 4562, 5, 22795, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235097, 2462, 4562, 5, 22796, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235098, 2462, 4562, 5, 22797, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235099, 2462, 4562, 5, 22800, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235100, 2462, 4562, 5, 22804, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235101, 2462, 4562, 5, 22807, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235102, 2462, 4562, 5, 22808, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235103, 2462, 4562, 5, 22809, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235104, 2462, 4562, 5, 22813, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235105, 2462, 4562, 5, 22814, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235106, 2462, 4562, 5, 22818, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235107, 2462, 4562, 5, 22819, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235108, 2462, 4562, 5, 22820, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235109, 2462, 4562, 5, 22824, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235110, 2462, 4562, 5, 22827, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235111, 2462, 4562, 5, 22828, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235112, 2462, 4562, 5, 22829, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235113, 2462, 4562, 5, 22832, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235114, 2462, 4562, 5, 22833, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235115, 2462, 4562, 5, 22835, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235116, 2462, 4562, 5, 22836, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235117, 2462, 4562, 5, 22837, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235118, 2462, 4562, 5, 22838, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235119, 2462, 4562, 5, 22839, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235120, 2462, 4562, 5, 22840, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235121, 2462, 4562, 5, 22843, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235122, 2462, 4562, 5, 22844, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235123, 2462, 4562, 5, 22858, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235124, 2462, 4562, 5, 22859, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235125, 2462, 4562, 5, 22861, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235126, 2462, 4562, 5, 22862, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235127, 2462, 4562, 5, 22863, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235128, 2462, 4562, 5, 22864, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235129, 2462, 4562, 5, 22866, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235130, 2462, 4562, 5, 22867, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235131, 2462, 4562, 5, 22884, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235132, 2462, 4562, 5, 22891, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235133, 2462, 4562, 5, 22894, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235134, 2462, 4562, 5, 22895, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235135, 2462, 4562, 5, 22896, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235136, 2462, 4562, 5, 22897, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235137, 2462, 4562, 5, 22898, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235138, 2462, 4562, 5, 22901, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235139, 2462, 4562, 5, 22903, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235140, 2462, 4562, 5, 22904, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235141, 2462, 4562, 5, 22905, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235142, 2462, 4562, 5, 22910, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235143, 2462, 4562, 5, 22911, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235144, 2462, 4562, 5, 22912, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235145, 2462, 4562, 5, 22916, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235146, 2462, 4562, 5, 22917, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235147, 2462, 4562, 5, 22919, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235148, 2462, 4562, 5, 22921, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235149, 2462, 4562, 5, 22924, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235150, 2462, 4562, 5, 22925, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235151, 2462, 4562, 5, 22926, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235152, 2462, 4562, 5, 22927, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235153, 2462, 4562, 5, 22928, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235154, 2462, 4562, 5, 22929, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235155, 2462, 4562, 5, 22931, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235156, 2462, 4562, 5, 22933, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235157, 2462, 4562, 5, 22935, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235158, 2462, 4562, 5, 22942, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235159, 2462, 4562, 5, 22945, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235160, 2462, 4562, 5, 22948, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235161, 2462, 4562, 5, 22949, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235162, 2462, 4562, 5, 22954, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235163, 2462, 4562, 5, 22955, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235164, 2462, 4562, 5, 22956, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235165, 2462, 4562, 5, 22959, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235166, 2462, 4562, 5, 22960, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235167, 2462, 4562, 5, 22961, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235168, 2462, 4562, 5, 22962, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235169, 2462, 4562, 5, 22963, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235170, 2462, 4562, 5, 22964, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235171, 2462, 4562, 5, 22965, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235172, 2462, 4562, 5, 22966, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235173, 2462, 4562, 5, 22967, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235174, 2462, 4562, 5, 22970, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235175, 2462, 4562, 5, 22977, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235176, 2462, 4562, 5, 22979, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235177, 2462, 4562, 5, 22982, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235178, 2462, 4562, 5, 22988, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235179, 2462, 4562, 5, 22989, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235180, 2462, 4562, 5, 22991, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235181, 2462, 4562, 5, 22996, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235182, 2462, 4562, 5, 22997, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235183, 2462, 4562, 5, 22998, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235184, 2462, 4562, 5, 23002, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235185, 2462, 4562, 5, 23003, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235186, 2462, 4562, 5, 23004, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235187, 2462, 4562, 5, 23005, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235188, 2462, 4562, 5, 23006, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235189, 2462, 4562, 5, 23007, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235190, 2462, 4562, 5, 23013, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235191, 2462, 4562, 5, 23014, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235192, 2462, 4562, 5, 23016, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235193, 2462, 4562, 5, 23017, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235194, 2462, 4562, 5, 23019, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235195, 2462, 4562, 5, 23020, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235196, 2462, 4562, 5, 23021, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235197, 2462, 4562, 5, 23022, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235198, 2462, 4562, 5, 23023, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235199, 2462, 4562, 5, 23024, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235200, 2462, 4562, 5, 23025, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235201, 2462, 4562, 5, 23026, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235202, 2462, 4562, 5, 23027, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235203, 2462, 4562, 5, 23028, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235204, 2462, 4562, 5, 23029, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235205, 2462, 4562, 5, 23030, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235206, 2462, 4562, 5, 23037, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235207, 2462, 4562, 5, 23038, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235208, 2462, 4562, 5, 23039, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235209, 2462, 4562, 5, 23040, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235210, 2462, 4562, 5, 23041, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235211, 2462, 4562, 5, 23042, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235212, 2462, 4562, 5, 23043, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235213, 2462, 4562, 5, 23044, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235214, 2462, 4562, 5, 23045, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235215, 2462, 4562, 5, 23046, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235216, 2462, 4562, 5, 23048, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235217, 2462, 4562, 5, 23050, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235218, 2462, 4562, 5, 23051, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235219, 2462, 4562, 5, 23052, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235220, 2462, 4562, 5, 23053, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235221, 2462, 4562, 5, 23055, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235222, 2462, 4562, 5, 23059, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235223, 2462, 4562, 5, 23062, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235224, 2462, 4562, 5, 23063, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235225, 2462, 4562, 5, 23065, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235226, 2462, 4562, 5, 23067, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235227, 2462, 4562, 5, 23068, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235228, 2462, 4562, 5, 23069, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235229, 2462, 4562, 5, 23071, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235230, 2462, 4562, 5, 23075, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235231, 2462, 4562, 5, 23077, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235232, 2462, 4562, 5, 23078, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235233, 2462, 4562, 5, 23079, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235234, 2462, 4562, 5, 23080, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235235, 2462, 4562, 5, 23081, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235236, 2462, 4562, 5, 23082, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235237, 2462, 4562, 5, 23083, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235238, 2462, 4562, 5, 23084, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235239, 2462, 4562, 5, 23086, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235240, 2462, 4562, 5, 23091, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235241, 2462, 4562, 5, 23092, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235242, 2462, 4562, 5, 23097, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235243, 2462, 4562, 5, 23103, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235244, 2462, 4562, 5, 23104, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235245, 2462, 4562, 5, 23111, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235246, 2462, 4562, 5, 23112, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235247, 2462, 4562, 5, 23113, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235248, 2462, 4562, 5, 23115, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235249, 2462, 4562, 5, 23119, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235250, 2462, 4562, 5, 23122, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235251, 2462, 4562, 5, 23141, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235252, 2462, 4562, 5, 23143, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235253, 2462, 4562, 5, 23144, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235254, 2462, 4562, 5, 23155, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235255, 2462, 4562, 5, 23156, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235256, 2462, 4562, 5, 23157, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235257, 2462, 4562, 5, 23168, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235258, 2462, 4562, 5, 23177, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235259, 2462, 4562, 5, 23180, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235260, 2462, 4562, 5, 23184, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235261, 2462, 4562, 5, 23192, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235262, 2462, 4562, 5, 23193, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235263, 2462, 4562, 5, 23194, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235264, 2462, 4562, 5, 23202, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235265, 2462, 4562, 5, 23203, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235266, 2462, 4562, 5, 23219, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235267, 2462, 4562, 5, 23223, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235268, 2462, 4562, 5, 23231, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235269, 2462, 4562, 5, 23243, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235270, 2462, 4562, 5, 23245, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235271, 2462, 4562, 5, 23246, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235272, 2462, 4562, 5, 23247, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235273, 2462, 4562, 5, 23248, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235274, 2462, 4562, 5, 23249, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235275, 2462, 4562, 5, 23250, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235276, 2462, 4562, 5, 23251, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235277, 2462, 4562, 5, 23253, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235278, 2462, 4562, 5, 23254, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235279, 2462, 4562, 5, 23255, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235280, 2462, 4562, 5, 23256, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235281, 2462, 4562, 5, 23257, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235282, 2462, 4562, 5, 23258, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235283, 2462, 4562, 5, 23259, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235284, 2462, 4562, 5, 23260, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235285, 2462, 4562, 5, 23261, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235286, 2462, 4562, 5, 23262, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235287, 2462, 4562, 5, 23263, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235288, 2462, 4562, 5, 23267, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235289, 2462, 4562, 5, 23270, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235290, 2462, 4562, 5, 23274, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235291, 2462, 4562, 5, 23276, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235292, 2462, 4562, 5, 23296, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235293, 2462, 4562, 5, 23297, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235294, 2462, 4562, 5, 23298, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235295, 2462, 4562, 5, 23299, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235296, 2462, 4562, 5, 23300, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235297, 2462, 4562, 5, 23306, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235298, 2462, 4562, 5, 23329, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235299, 2462, 4562, 5, 23330, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235300, 2462, 4562, 5, 23331, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235301, 2462, 4562, 5, 23332, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235302, 2462, 4562, 5, 23333, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235303, 2462, 4562, 5, 23334, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235304, 2462, 4562, 5, 23335, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235305, 2462, 4562, 5, 23336, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235306, 2462, 4562, 5, 23337, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235307, 2462, 4562, 5, 23338, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235308, 2462, 4562, 5, 23339, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235309, 2462, 4562, 5, 23340, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235310, 2462, 4562, 5, 23341, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235311, 2462, 4562, 5, 23349, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235312, 2462, 4562, 5, 23350, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235313, 2462, 4562, 5, 23351, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235314, 2462, 4562, 5, 23352, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235315, 2462, 4562, 5, 23353, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235316, 2462, 4562, 5, 23354, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235317, 2462, 4562, 5, 23355, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235318, 2462, 4562, 5, 23356, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235319, 2462, 4562, 5, 23357, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235320, 2462, 4562, 5, 23376, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235321, 2462, 4562, 5, 23379, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235322, 2462, 4562, 5, 23400, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235323, 2462, 4562, 5, 23427, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235324, 2462, 4562, 5, 23441, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235325, 2462, 4562, 5, 23442, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235326, 2462, 4562, 5, 23445, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235327, 2462, 4562, 5, 23453, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235328, 2462, 4562, 5, 23454, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235329, 2462, 4562, 5, 23455, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235330, 2462, 4562, 5, 23456, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235331, 2462, 4562, 5, 23480, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235332, 2462, 4562, 5, 23491, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235333, 2462, 4562, 5, 23497, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235334, 2462, 4562, 5, 23505, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235335, 2462, 4562, 5, 23510, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235336, 2462, 4562, 5, 23511, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235337, 2462, 4562, 5, 23512, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235338, 2462, 4562, 5, 23520, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235339, 2462, 4562, 5, 23524, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235340, 2462, 4562, 5, 23525, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235341, 2462, 4562, 5, 23526, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235342, 2462, 4562, 5, 23530, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235343, 2462, 4562, 5, 23531, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235344, 2462, 4562, 5, 23532, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235345, 2462, 4562, 5, 23541, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235346, 2462, 4562, 5, 23542, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235347, 2462, 4562, 5, 23545, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235348, 2462, 4562, 5, 23584, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235349, 2462, 4562, 5, 23588, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235350, 2462, 4562, 5, 23589, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235351, 2462, 4562, 5, 23590, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235352, 2462, 4562, 5, 23593, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235353, 2462, 4562, 5, 23594, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235354, 2462, 4562, 5, 23597, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235355, 2462, 4562, 5, 23598, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235356, 2462, 4562, 5, 23602, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235357, 2462, 4562, 5, 23604, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235358, 2462, 4562, 5, 23613, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235359, 2462, 4562, 5, 23614, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235360, 2462, 4562, 5, 23617, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235361, 2462, 4562, 5, 23618, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235362, 2462, 4562, 5, 23619, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235363, 2462, 4562, 5, 23620, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235364, 2462, 4562, 5, 23624, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235366, 2463, 4562, 5, 22746, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235367, 2463, 4562, 5, 22747, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235368, 2463, 4562, 5, 22748, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235369, 2463, 4562, 5, 22749, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235370, 2463, 4562, 5, 22750, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235371, 2463, 4562, 5, 22751, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235372, 2463, 4562, 5, 22752, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235373, 2463, 4562, 5, 22754, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235374, 2463, 4562, 5, 22756, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235375, 2463, 4562, 5, 22758, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235376, 2463, 4562, 5, 22759, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235377, 2463, 4562, 5, 22760, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235378, 2463, 4562, 5, 22761, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235379, 2463, 4562, 5, 22762, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235380, 2463, 4562, 5, 22763, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235381, 2463, 4562, 5, 22764, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235382, 2463, 4562, 5, 22767, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235383, 2463, 4562, 5, 22768, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235384, 2463, 4562, 5, 22769, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235385, 2463, 4562, 5, 22770, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235386, 2463, 4562, 5, 22771, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235387, 2463, 4562, 5, 22772, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235388, 2463, 4562, 5, 22773, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235389, 2463, 4562, 5, 22774, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235390, 2463, 4562, 5, 22775, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235391, 2463, 4562, 5, 22776, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235392, 2463, 4562, 5, 22777, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235393, 2463, 4562, 5, 22778, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235394, 2463, 4562, 5, 22779, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235395, 2463, 4562, 5, 22781, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235396, 2463, 4562, 5, 22782, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235397, 2463, 4562, 5, 22783, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235398, 2463, 4562, 5, 22784, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235399, 2463, 4562, 5, 22785, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235400, 2463, 4562, 5, 22786, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235401, 2463, 4562, 5, 22787, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235402, 2463, 4562, 5, 22788, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235403, 2463, 4562, 5, 22789, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235404, 2463, 4562, 5, 22790, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235405, 2463, 4562, 5, 22791, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235406, 2463, 4562, 5, 22792, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235407, 2463, 4562, 5, 22793, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235408, 2463, 4562, 5, 22794, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235409, 2463, 4562, 5, 22795, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235410, 2463, 4562, 5, 22796, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235411, 2463, 4562, 5, 22797, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235412, 2463, 4562, 5, 22798, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235413, 2463, 4562, 5, 22799, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235414, 2463, 4562, 5, 22801, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235415, 2463, 4562, 5, 22802, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235416, 2463, 4562, 5, 22803, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235417, 2463, 4562, 5, 22804, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235418, 2463, 4562, 5, 22805, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235419, 2463, 4562, 5, 22806, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235420, 2463, 4562, 5, 22807, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235421, 2463, 4562, 5, 22808, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235422, 2463, 4562, 5, 22809, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235423, 2463, 4562, 5, 22811, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235424, 2463, 4562, 5, 22812, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235425, 2463, 4562, 5, 22813, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235426, 2463, 4562, 5, 22815, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235427, 2463, 4562, 5, 22816, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235428, 2463, 4562, 5, 22817, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235429, 2463, 4562, 5, 22819, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235430, 2463, 4562, 5, 22820, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235431, 2463, 4562, 5, 22823, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235432, 2463, 4562, 5, 22824, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235433, 2463, 4562, 5, 22825, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235434, 2463, 4562, 5, 22826, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235435, 2463, 4562, 5, 22827, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235436, 2463, 4562, 5, 22828, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235437, 2463, 4562, 5, 22829, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235438, 2463, 4562, 5, 22830, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235439, 2463, 4562, 5, 22831, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235440, 2463, 4562, 5, 22832, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235441, 2463, 4562, 5, 22833, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235442, 2463, 4562, 5, 22834, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235443, 2463, 4562, 5, 22835, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235444, 2463, 4562, 5, 22836, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235445, 2463, 4562, 5, 22837, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235446, 2463, 4562, 5, 22838, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235447, 2463, 4562, 5, 22839, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235448, 2463, 4562, 5, 22840, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235449, 2463, 4562, 5, 22842, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235450, 2463, 4562, 5, 22844, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235451, 2463, 4562, 5, 22846, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235452, 2463, 4562, 5, 22847, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235453, 2463, 4562, 5, 22848, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235454, 2463, 4562, 5, 22849, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235455, 2463, 4562, 5, 22850, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235456, 2463, 4562, 5, 22851, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235457, 2463, 4562, 5, 22852, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235458, 2463, 4562, 5, 22853, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235459, 2463, 4562, 5, 22854, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235460, 2463, 4562, 5, 22855, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235461, 2463, 4562, 5, 22856, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235462, 2463, 4562, 5, 22857, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235463, 2463, 4562, 5, 22858, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235464, 2463, 4562, 5, 22859, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235465, 2463, 4562, 5, 22860, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235466, 2463, 4562, 5, 22866, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235467, 2463, 4562, 5, 22870, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235468, 2463, 4562, 5, 22875, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235469, 2463, 4562, 5, 22876, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235470, 2463, 4562, 5, 22877, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235471, 2463, 4562, 5, 22878, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235472, 2463, 4562, 5, 22879, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235473, 2463, 4562, 5, 22880, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235474, 2463, 4562, 5, 22881, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235475, 2463, 4562, 5, 22882, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235476, 2463, 4562, 5, 22883, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235477, 2463, 4562, 5, 22884, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235478, 2463, 4562, 5, 22885, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235479, 2463, 4562, 5, 22886, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235480, 2463, 4562, 5, 22887, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235481, 2463, 4562, 5, 22888, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235482, 2463, 4562, 5, 22889, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235483, 2463, 4562, 5, 22890, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235484, 2463, 4562, 5, 22891, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235485, 2463, 4562, 5, 22892, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235486, 2463, 4562, 5, 22893, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235487, 2463, 4562, 5, 22894, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235488, 2463, 4562, 5, 22895, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235489, 2463, 4562, 5, 22897, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235490, 2463, 4562, 5, 22899, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235491, 2463, 4562, 5, 22900, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235492, 2463, 4562, 5, 22901, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235493, 2463, 4562, 5, 22902, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235494, 2463, 4562, 5, 22903, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235495, 2463, 4562, 5, 22904, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235496, 2463, 4562, 5, 22905, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235497, 2463, 4562, 5, 22906, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235498, 2463, 4562, 5, 22907, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235499, 2463, 4562, 5, 22908, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235500, 2463, 4562, 5, 22909, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235501, 2463, 4562, 5, 22910, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235502, 2463, 4562, 5, 22911, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235503, 2463, 4562, 5, 22912, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235504, 2463, 4562, 5, 22913, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235505, 2463, 4562, 5, 22914, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235506, 2463, 4562, 5, 22915, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235507, 2463, 4562, 5, 22917, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235508, 2463, 4562, 5, 22918, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235509, 2463, 4562, 5, 22919, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235510, 2463, 4562, 5, 22920, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235511, 2463, 4562, 5, 22922, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235512, 2463, 4562, 5, 22924, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235513, 2463, 4562, 5, 22925, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235514, 2463, 4562, 5, 22926, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235515, 2463, 4562, 5, 22927, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235516, 2463, 4562, 5, 22928, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235517, 2463, 4562, 5, 22929, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235518, 2463, 4562, 5, 22930, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235519, 2463, 4562, 5, 22931, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235520, 2463, 4562, 5, 22932, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235521, 2463, 4562, 5, 22933, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235522, 2463, 4562, 5, 22934, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235523, 2463, 4562, 5, 22935, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235524, 2463, 4562, 5, 22936, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235525, 2463, 4562, 5, 22937, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235526, 2463, 4562, 5, 22938, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235527, 2463, 4562, 5, 22939, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235528, 2463, 4562, 5, 22940, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235529, 2463, 4562, 5, 22941, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235530, 2463, 4562, 5, 22943, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235531, 2463, 4562, 5, 22944, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235532, 2463, 4562, 5, 22946, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235533, 2463, 4562, 5, 22947, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235534, 2463, 4562, 5, 22948, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235535, 2463, 4562, 5, 22949, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235536, 2463, 4562, 5, 22950, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235537, 2463, 4562, 5, 22954, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235538, 2463, 4562, 5, 22955, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235539, 2463, 4562, 5, 22956, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235540, 2463, 4562, 5, 22957, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235541, 2463, 4562, 5, 22958, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235542, 2463, 4562, 5, 22959, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235543, 2463, 4562, 5, 22960, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235544, 2463, 4562, 5, 22967, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235545, 2463, 4562, 5, 22968, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235546, 2463, 4562, 5, 22969, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235547, 2463, 4562, 5, 22972, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235548, 2463, 4562, 5, 22973, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235549, 2463, 4562, 5, 22974, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235550, 2463, 4562, 5, 22975, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235551, 2463, 4562, 5, 22976, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235552, 2463, 4562, 5, 22977, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235553, 2463, 4562, 5, 22978, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235554, 2463, 4562, 5, 22979, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235555, 2463, 4562, 5, 22980, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235556, 2463, 4562, 5, 22981, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235557, 2463, 4562, 5, 22983, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235558, 2463, 4562, 5, 22984, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235559, 2463, 4562, 5, 22985, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235560, 2463, 4562, 5, 22986, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235561, 2463, 4562, 5, 22987, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235562, 2463, 4562, 5, 22988, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235563, 2463, 4562, 5, 22991, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235564, 2463, 4562, 5, 22992, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235565, 2463, 4562, 5, 22993, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235566, 2463, 4562, 5, 22996, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235567, 2463, 4562, 5, 22997, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235568, 2463, 4562, 5, 22998, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235569, 2463, 4562, 5, 22999, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235570, 2463, 4562, 5, 23000, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235571, 2463, 4562, 5, 23001, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235572, 2463, 4562, 5, 23002, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235573, 2463, 4562, 5, 23003, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235574, 2463, 4562, 5, 23008, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235575, 2463, 4562, 5, 23009, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235576, 2463, 4562, 5, 23010, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235577, 2463, 4562, 5, 23011, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235578, 2463, 4562, 5, 23012, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235579, 2463, 4562, 5, 23013, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235580, 2463, 4562, 5, 23016, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235581, 2463, 4562, 5, 23017, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235582, 2463, 4562, 5, 23018, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235583, 2463, 4562, 5, 23019, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235584, 2463, 4562, 5, 23020, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235585, 2463, 4562, 5, 23021, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235586, 2463, 4562, 5, 23032, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235587, 2463, 4562, 5, 23033, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235588, 2463, 4562, 5, 23034, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235589, 2463, 4562, 5, 23035, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235590, 2463, 4562, 5, 23036, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235591, 2463, 4562, 5, 23048, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235592, 2463, 4562, 5, 23049, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235593, 2463, 4562, 5, 23050, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235594, 2463, 4562, 5, 23051, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235595, 2463, 4562, 5, 23052, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235596, 2463, 4562, 5, 23053, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235597, 2463, 4562, 5, 23054, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235598, 2463, 4562, 5, 23058, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235599, 2463, 4562, 5, 23059, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235600, 2463, 4562, 5, 23061, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235601, 2463, 4562, 5, 23062, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235602, 2463, 4562, 5, 23063, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235603, 2463, 4562, 5, 23064, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235604, 2463, 4562, 5, 23065, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235605, 2463, 4562, 5, 23066, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235606, 2463, 4562, 5, 23067, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235607, 2463, 4562, 5, 23068, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235608, 2463, 4562, 5, 23069, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235609, 2463, 4562, 5, 23070, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235610, 2463, 4562, 5, 23071, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235611, 2463, 4562, 5, 23073, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235612, 2463, 4562, 5, 23074, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235613, 2463, 4562, 5, 23075, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235614, 2463, 4562, 5, 23076, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235615, 2463, 4562, 5, 23081, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235616, 2463, 4562, 5, 23083, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235617, 2463, 4562, 5, 23084, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235618, 2463, 4562, 5, 23085, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235619, 2463, 4562, 5, 23086, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235620, 2463, 4562, 5, 23089, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235621, 2463, 4562, 5, 23090, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235622, 2463, 4562, 5, 23093, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235623, 2463, 4562, 5, 23094, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235624, 2463, 4562, 5, 23095, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235625, 2463, 4562, 5, 23096, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235626, 2463, 4562, 5, 23097, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235627, 2463, 4562, 5, 23098, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235628, 2463, 4562, 5, 23099, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235629, 2463, 4562, 5, 23100, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235630, 2463, 4562, 5, 23101, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235631, 2463, 4562, 5, 23102, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235632, 2463, 4562, 5, 23103, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235633, 2463, 4562, 5, 23110, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235634, 2463, 4562, 5, 23111, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235635, 2463, 4562, 5, 23113, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235636, 2463, 4562, 5, 23114, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235637, 2463, 4562, 5, 23115, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235638, 2463, 4562, 5, 23116, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235639, 2463, 4562, 5, 23117, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235640, 2463, 4562, 5, 23118, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235641, 2463, 4562, 5, 23119, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235642, 2463, 4562, 5, 23120, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235643, 2463, 4562, 5, 23121, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235644, 2463, 4562, 5, 23122, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235645, 2463, 4562, 5, 23123, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235646, 2463, 4562, 5, 23124, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235647, 2463, 4562, 5, 23125, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235648, 2463, 4562, 5, 23126, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235649, 2463, 4562, 5, 23127, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235650, 2463, 4562, 5, 23128, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235651, 2463, 4562, 5, 23129, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235652, 2463, 4562, 5, 23130, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235653, 2463, 4562, 5, 23131, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235654, 2463, 4562, 5, 23132, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235655, 2463, 4562, 5, 23133, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235656, 2463, 4562, 5, 23134, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235657, 2463, 4562, 5, 23135, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235658, 2463, 4562, 5, 23136, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235659, 2463, 4562, 5, 23137, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235660, 2463, 4562, 5, 23140, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235661, 2463, 4562, 5, 23141, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235662, 2463, 4562, 5, 23142, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235663, 2463, 4562, 5, 23143, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235664, 2463, 4562, 5, 23144, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235665, 2463, 4562, 5, 23145, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235666, 2463, 4562, 5, 23146, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235667, 2463, 4562, 5, 23147, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235668, 2463, 4562, 5, 23148, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235669, 2463, 4562, 5, 23149, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235670, 2463, 4562, 5, 23150, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235671, 2463, 4562, 5, 23155, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235672, 2463, 4562, 5, 23156, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235673, 2463, 4562, 5, 23157, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235674, 2463, 4562, 5, 23158, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235675, 2463, 4562, 5, 23159, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235676, 2463, 4562, 5, 23160, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235677, 2463, 4562, 5, 23162, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235678, 2463, 4562, 5, 23163, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235679, 2463, 4562, 5, 23164, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235680, 2463, 4562, 5, 23165, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235681, 2463, 4562, 5, 23167, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235682, 2463, 4562, 5, 23169, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235683, 2463, 4562, 5, 23170, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235684, 2463, 4562, 5, 23171, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235685, 2463, 4562, 5, 23172, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235686, 2463, 4562, 5, 23173, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235687, 2463, 4562, 5, 23174, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235688, 2463, 4562, 5, 23175, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235689, 2463, 4562, 5, 23176, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235690, 2463, 4562, 5, 23177, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235691, 2463, 4562, 5, 23178, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235692, 2463, 4562, 5, 23179, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235693, 2463, 4562, 5, 23183, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235694, 2463, 4562, 5, 23184, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235695, 2463, 4562, 5, 23185, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235696, 2463, 4562, 5, 23186, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235697, 2463, 4562, 5, 23187, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235698, 2463, 4562, 5, 23188, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235699, 2463, 4562, 5, 23190, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235700, 2463, 4562, 5, 23191, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235701, 2463, 4562, 5, 23192, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235702, 2463, 4562, 5, 23193, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235703, 2463, 4562, 5, 23194, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235704, 2463, 4562, 5, 23197, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235705, 2463, 4562, 5, 23198, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235706, 2463, 4562, 5, 23199, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235707, 2463, 4562, 5, 23200, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235708, 2463, 4562, 5, 23201, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235709, 2463, 4562, 5, 23204, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235710, 2463, 4562, 5, 23205, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235711, 2463, 4562, 5, 23206, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235712, 2463, 4562, 5, 23207, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235713, 2463, 4562, 5, 23208, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235714, 2463, 4562, 5, 23209, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235715, 2463, 4562, 5, 23210, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235716, 2463, 4562, 5, 23211, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235717, 2463, 4562, 5, 23212, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235718, 2463, 4562, 5, 23213, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235719, 2463, 4562, 5, 23214, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235720, 2463, 4562, 5, 23215, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235721, 2463, 4562, 5, 23216, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235722, 2463, 4562, 5, 23217, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235723, 2463, 4562, 5, 23218, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235724, 2463, 4562, 5, 23220, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235725, 2463, 4562, 5, 23221, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235726, 2463, 4562, 5, 23222, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235727, 2463, 4562, 5, 23223, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235728, 2463, 4562, 5, 23224, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235729, 2463, 4562, 5, 23225, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235730, 2463, 4562, 5, 23226, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235731, 2463, 4562, 5, 23227, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235732, 2463, 4562, 5, 23228, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235733, 2463, 4562, 5, 23229, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235734, 2463, 4562, 5, 23230, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235735, 2463, 4562, 5, 23232, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235736, 2463, 4562, 5, 23233, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235737, 2463, 4562, 5, 23234, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235738, 2463, 4562, 5, 23235, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235739, 2463, 4562, 5, 23236, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235740, 2463, 4562, 5, 23237, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235741, 2463, 4562, 5, 23238, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235742, 2463, 4562, 5, 23239, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235743, 2463, 4562, 5, 23240, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235744, 2463, 4562, 5, 23241, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235745, 2463, 4562, 5, 23242, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235746, 2463, 4562, 5, 23243, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235747, 2463, 4562, 5, 23244, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235748, 2463, 4562, 5, 23249, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235749, 2463, 4562, 5, 23250, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235750, 2463, 4562, 5, 23252, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235751, 2463, 4562, 5, 23260, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235752, 2463, 4562, 5, 23263, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235753, 2463, 4562, 5, 23264, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235754, 2463, 4562, 5, 23265, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235755, 2463, 4562, 5, 23266, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235756, 2463, 4562, 5, 23267, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235757, 2463, 4562, 5, 23268, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235758, 2463, 4562, 5, 23269, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235759, 2463, 4562, 5, 23270, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235760, 2463, 4562, 5, 23271, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235761, 2463, 4562, 5, 23272, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235762, 2463, 4562, 5, 23273, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235763, 2463, 4562, 5, 23275, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235764, 2463, 4562, 5, 23276, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235765, 2463, 4562, 5, 23277, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235766, 2463, 4562, 5, 23278, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235767, 2463, 4562, 5, 23279, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235768, 2463, 4562, 5, 23280, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235769, 2463, 4562, 5, 23281, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235770, 2463, 4562, 5, 23282, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235771, 2463, 4562, 5, 23283, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235772, 2463, 4562, 5, 23284, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235773, 2463, 4562, 5, 23285, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235774, 2463, 4562, 5, 23286, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235775, 2463, 4562, 5, 23287, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235776, 2463, 4562, 5, 23288, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235777, 2463, 4562, 5, 23289, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235778, 2463, 4562, 5, 23290, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235779, 2463, 4562, 5, 23291, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235780, 2463, 4562, 5, 23292, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235781, 2463, 4562, 5, 23293, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235782, 2463, 4562, 5, 23294, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235783, 2463, 4562, 5, 23295, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235784, 2463, 4562, 5, 23301, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235785, 2463, 4562, 5, 23302, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235786, 2463, 4562, 5, 23303, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235787, 2463, 4562, 5, 23304, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235788, 2463, 4562, 5, 23305, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235789, 2463, 4562, 5, 23307, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235790, 2463, 4562, 5, 23308, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235791, 2463, 4562, 5, 23309, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235792, 2463, 4562, 5, 23310, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235793, 2463, 4562, 5, 23311, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235794, 2463, 4562, 5, 23312, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235795, 2463, 4562, 5, 23313, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235796, 2463, 4562, 5, 23314, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235797, 2463, 4562, 5, 23315, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235798, 2463, 4562, 5, 23316, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235799, 2463, 4562, 5, 23317, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235800, 2463, 4562, 5, 23318, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235801, 2463, 4562, 5, 23319, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235802, 2463, 4562, 5, 23321, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235803, 2463, 4562, 5, 23322, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235804, 2463, 4562, 5, 23324, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235805, 2463, 4562, 5, 23325, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235806, 2463, 4562, 5, 23326, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235807, 2463, 4562, 5, 23327, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235808, 2463, 4562, 5, 23328, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235809, 2463, 4562, 5, 23329, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235810, 2463, 4562, 5, 23330, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235811, 2463, 4562, 5, 23331, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235812, 2463, 4562, 5, 23332, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235813, 2463, 4562, 5, 23333, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235814, 2463, 4562, 5, 23342, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235815, 2463, 4562, 5, 23343, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235816, 2463, 4562, 5, 23344, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235817, 2463, 4562, 5, 23345, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235818, 2463, 4562, 5, 23346, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235819, 2463, 4562, 5, 23348, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235820, 2463, 4562, 5, 23350, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235821, 2463, 4562, 5, 23351, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235822, 2463, 4562, 5, 23352, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235823, 2463, 4562, 5, 23353, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235824, 2463, 4562, 5, 23357, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235825, 2463, 4562, 5, 23358, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235826, 2463, 4562, 5, 23359, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235827, 2463, 4562, 5, 23360, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235828, 2463, 4562, 5, 23361, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235829, 2463, 4562, 5, 23362, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235830, 2463, 4562, 5, 23363, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235831, 2463, 4562, 5, 23364, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235832, 2463, 4562, 5, 23365, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235833, 2463, 4562, 5, 23366, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235834, 2463, 4562, 5, 23367, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235835, 2463, 4562, 5, 23369, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235836, 2463, 4562, 5, 23370, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235837, 2463, 4562, 5, 23374, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235838, 2463, 4562, 5, 23375, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235839, 2463, 4562, 5, 23377, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235840, 2463, 4562, 5, 23378, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235841, 2463, 4562, 5, 23380, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235842, 2463, 4562, 5, 23381, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235843, 2463, 4562, 5, 23382, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235844, 2463, 4562, 5, 23383, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235845, 2463, 4562, 5, 23384, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235846, 2463, 4562, 5, 23385, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235847, 2463, 4562, 5, 23386, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235848, 2463, 4562, 5, 23387, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235849, 2463, 4562, 5, 23388, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235850, 2463, 4562, 5, 23389, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235851, 2463, 4562, 5, 23390, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235852, 2463, 4562, 5, 23391, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235853, 2463, 4562, 5, 23392, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235854, 2463, 4562, 5, 23393, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235855, 2463, 4562, 5, 23394, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235856, 2463, 4562, 5, 23395, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235857, 2463, 4562, 5, 23396, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235858, 2463, 4562, 5, 23397, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235859, 2463, 4562, 5, 23398, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235860, 2463, 4562, 5, 23399, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235861, 2463, 4562, 5, 23401, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235862, 2463, 4562, 5, 23402, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235863, 2463, 4562, 5, 23403, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235864, 2463, 4562, 5, 23404, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235865, 2463, 4562, 5, 23405, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235866, 2463, 4562, 5, 23406, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235867, 2463, 4562, 5, 23407, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235868, 2463, 4562, 5, 23408, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235869, 2463, 4562, 5, 23410, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235870, 2463, 4562, 5, 23411, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235871, 2463, 4562, 5, 23412, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235872, 2463, 4562, 5, 23413, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235873, 2463, 4562, 5, 23414, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235874, 2463, 4562, 5, 23415, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235875, 2463, 4562, 5, 23416, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235876, 2463, 4562, 5, 23417, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235877, 2463, 4562, 5, 23418, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235878, 2463, 4562, 5, 23419, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235879, 2463, 4562, 5, 23420, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235880, 2463, 4562, 5, 23421, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235881, 2463, 4562, 5, 23422, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235882, 2463, 4562, 5, 23423, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235883, 2463, 4562, 5, 23425, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235884, 2463, 4562, 5, 23426, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235885, 2463, 4562, 5, 23428, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235886, 2463, 4562, 5, 23429, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235887, 2463, 4562, 5, 23430, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235888, 2463, 4562, 5, 23431, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235889, 2463, 4562, 5, 23432, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235890, 2463, 4562, 5, 23433, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235891, 2463, 4562, 5, 23434, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235892, 2463, 4562, 5, 23435, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235893, 2463, 4562, 5, 23436, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235894, 2463, 4562, 5, 23437, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235895, 2463, 4562, 5, 23438, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235896, 2463, 4562, 5, 23443, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235897, 2463, 4562, 5, 23444, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235898, 2463, 4562, 5, 23446, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235899, 2463, 4562, 5, 23447, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235900, 2463, 4562, 5, 23448, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235901, 2463, 4562, 5, 23449, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235902, 2463, 4562, 5, 23450, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235903, 2463, 4562, 5, 23451, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235904, 2463, 4562, 5, 23452, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235905, 2463, 4562, 5, 23453, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235906, 2463, 4562, 5, 23454, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235907, 2463, 4562, 5, 23455, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235908, 2463, 4562, 5, 23457, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235909, 2463, 4562, 5, 23458, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235910, 2463, 4562, 5, 23459, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235911, 2463, 4562, 5, 23460, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235912, 2463, 4562, 5, 23461, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235913, 2463, 4562, 5, 23462, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235914, 2463, 4562, 5, 23463, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235915, 2463, 4562, 5, 23464, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235916, 2463, 4562, 5, 23465, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235917, 2463, 4562, 5, 23466, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235918, 2463, 4562, 5, 23467, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235919, 2463, 4562, 5, 23468, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235920, 2463, 4562, 5, 23469, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235921, 2463, 4562, 5, 23470, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235922, 2463, 4562, 5, 23471, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235923, 2463, 4562, 5, 23472, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235924, 2463, 4562, 5, 23473, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235925, 2463, 4562, 5, 23474, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235926, 2463, 4562, 5, 23475, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235927, 2463, 4562, 5, 23477, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235928, 2463, 4562, 5, 23478, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235929, 2463, 4562, 5, 23479, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235930, 2463, 4562, 5, 23480, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235931, 2463, 4562, 5, 23481, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235932, 2463, 4562, 5, 23482, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235933, 2463, 4562, 5, 23483, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235934, 2463, 4562, 5, 23484, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235935, 2463, 4562, 5, 23485, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235936, 2463, 4562, 5, 23486, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235937, 2463, 4562, 5, 23487, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235938, 2463, 4562, 5, 23488, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235939, 2463, 4562, 5, 23489, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235940, 2463, 4562, 5, 23490, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235941, 2463, 4562, 5, 23492, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235942, 2463, 4562, 5, 23493, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235943, 2463, 4562, 5, 23494, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235944, 2463, 4562, 5, 23495, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235945, 2463, 4562, 5, 23496, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235946, 2463, 4562, 5, 23498, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235947, 2463, 4562, 5, 23499, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235948, 2463, 4562, 5, 23500, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235949, 2463, 4562, 5, 23501, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235950, 2463, 4562, 5, 23502, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235951, 2463, 4562, 5, 23503, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235952, 2463, 4562, 5, 23504, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235953, 2463, 4562, 5, 23506, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235954, 2463, 4562, 5, 23507, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235955, 2463, 4562, 5, 23508, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235956, 2463, 4562, 5, 23509, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235957, 2463, 4562, 5, 23513, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235958, 2463, 4562, 5, 23514, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235959, 2463, 4562, 5, 23515, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235960, 2463, 4562, 5, 23516, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235961, 2463, 4562, 5, 23517, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235962, 2463, 4562, 5, 23518, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235963, 2463, 4562, 5, 23519, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235964, 2463, 4562, 5, 23521, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235965, 2463, 4562, 5, 23522, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235966, 2463, 4562, 5, 23523, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235967, 2463, 4562, 5, 23527, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235968, 2463, 4562, 5, 23528, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235969, 2463, 4562, 5, 23529, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235970, 2463, 4562, 5, 23530, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235971, 2463, 4562, 5, 23531, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235972, 2463, 4562, 5, 23533, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235973, 2463, 4562, 5, 23534, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235974, 2463, 4562, 5, 23535, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235975, 2463, 4562, 5, 23536, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235976, 2463, 4562, 5, 23537, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235977, 2463, 4562, 5, 23538, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235978, 2463, 4562, 5, 23539, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235979, 2463, 4562, 5, 23540, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235980, 2463, 4562, 5, 23542, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235981, 2463, 4562, 5, 23543, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235982, 2463, 4562, 5, 23544, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235983, 2463, 4562, 5, 23546, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235984, 2463, 4562, 5, 23547, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235985, 2463, 4562, 5, 23549, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235986, 2463, 4562, 5, 23550, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235987, 2463, 4562, 5, 23551, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235988, 2463, 4562, 5, 23552, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235989, 2463, 4562, 5, 23554, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235990, 2463, 4562, 5, 23555, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235991, 2463, 4562, 5, 23556, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235992, 2463, 4562, 5, 23557, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235993, 2463, 4562, 5, 23558, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235994, 2463, 4562, 5, 23559, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235995, 2463, 4562, 5, 23560, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235996, 2463, 4562, 5, 23562, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235997, 2463, 4562, 5, 23563, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235998, 2463, 4562, 5, 23564, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (235999, 2463, 4562, 5, 23565, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236000, 2463, 4562, 5, 23566, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236001, 2463, 4562, 5, 23567, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236002, 2463, 4562, 5, 23568, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236003, 2463, 4562, 5, 23569, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236004, 2463, 4562, 5, 23570, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236005, 2463, 4562, 5, 23571, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236006, 2463, 4562, 5, 23572, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236007, 2463, 4562, 5, 23573, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236008, 2463, 4562, 5, 23574, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236009, 2463, 4562, 5, 23575, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236010, 2463, 4562, 5, 23577, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236011, 2463, 4562, 5, 23579, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236012, 2463, 4562, 5, 23580, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236013, 2463, 4562, 5, 23581, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236014, 2463, 4562, 5, 23582, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236015, 2463, 4562, 5, 23583, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236016, 2463, 4562, 5, 23585, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236017, 2463, 4562, 5, 23586, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236018, 2463, 4562, 5, 23587, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236019, 2463, 4562, 5, 23590, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236020, 2463, 4562, 5, 23591, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236021, 2463, 4562, 5, 23592, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236022, 2463, 4562, 5, 23595, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236023, 2463, 4562, 5, 23596, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236024, 2463, 4562, 5, 23598, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236025, 2463, 4562, 5, 23599, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236026, 2463, 4562, 5, 23600, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236027, 2463, 4562, 5, 23601, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236028, 2463, 4562, 5, 23602, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236029, 2463, 4562, 5, 23603, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236030, 2463, 4562, 5, 23605, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236031, 2463, 4562, 5, 23606, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236032, 2463, 4562, 5, 23607, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236033, 2463, 4562, 5, 23608, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236034, 2463, 4562, 5, 23609, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236035, 2463, 4562, 5, 23610, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236036, 2463, 4562, 5, 23611, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236037, 2463, 4562, 5, 23612, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236038, 2463, 4562, 5, 23615, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236039, 2463, 4562, 5, 23616, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236040, 2463, 4562, 5, 23619, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236041, 2463, 4562, 5, 23622, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236042, 2463, 4562, 5, 23623, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236043, 2463, 4562, 5, 22755, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236045, 2464, 4562, 5, 22749, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236046, 2464, 4562, 5, 22750, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236047, 2464, 4562, 5, 22763, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236048, 2464, 4562, 5, 22765, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236049, 2464, 4562, 5, 22767, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236050, 2464, 4562, 5, 22774, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236051, 2464, 4562, 5, 22779, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236052, 2464, 4562, 5, 22781, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236053, 2464, 4562, 5, 22783, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236054, 2464, 4562, 5, 22785, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236055, 2464, 4562, 5, 22799, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236056, 2464, 4562, 5, 22801, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236057, 2464, 4562, 5, 22803, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236058, 2464, 4562, 5, 22814, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236059, 2464, 4562, 5, 22821, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236060, 2464, 4562, 5, 22822, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236061, 2464, 4562, 5, 22825, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236062, 2464, 4562, 5, 22826, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236063, 2464, 4562, 5, 22841, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236064, 2464, 4562, 5, 22842, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236065, 2464, 4562, 5, 22845, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236066, 2464, 4562, 5, 22852, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236067, 2464, 4562, 5, 22853, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236068, 2464, 4562, 5, 22854, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236069, 2464, 4562, 5, 22865, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236070, 2464, 4562, 5, 22909, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236071, 2464, 4562, 5, 22923, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236072, 2464, 4562, 5, 22957, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236073, 2464, 4562, 5, 22971, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236074, 2464, 4562, 5, 22978, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236075, 2464, 4562, 5, 22983, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236076, 2464, 4562, 5, 22984, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236077, 2464, 4562, 5, 22985, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236078, 2464, 4562, 5, 22986, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236079, 2464, 4562, 5, 22992, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236080, 2464, 4562, 5, 23010, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236081, 2464, 4562, 5, 23011, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236082, 2464, 4562, 5, 23012, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236083, 2464, 4562, 5, 23015, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236084, 2464, 4562, 5, 23034, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236085, 2464, 4562, 5, 23036, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236086, 2464, 4562, 5, 23057, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236087, 2464, 4562, 5, 23064, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236088, 2464, 4562, 5, 23072, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236089, 2464, 4562, 5, 23110, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236090, 2464, 4562, 5, 23118, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236091, 2464, 4562, 5, 23121, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236092, 2464, 4562, 5, 23123, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236093, 2464, 4562, 5, 23124, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236094, 2464, 4562, 5, 23127, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236095, 2464, 4562, 5, 23149, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236096, 2464, 4562, 5, 23150, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236097, 2464, 4562, 5, 23151, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236098, 2464, 4562, 5, 23152, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236099, 2464, 4562, 5, 23153, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236100, 2464, 4562, 5, 23154, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236101, 2464, 4562, 5, 23159, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236102, 2464, 4562, 5, 23160, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236103, 2464, 4562, 5, 23161, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236104, 2464, 4562, 5, 23162, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236105, 2464, 4562, 5, 23163, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236106, 2464, 4562, 5, 23166, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236107, 2464, 4562, 5, 23170, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236108, 2464, 4562, 5, 23181, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236109, 2464, 4562, 5, 23182, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236110, 2464, 4562, 5, 23195, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236111, 2464, 4562, 5, 23196, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236112, 2464, 4562, 5, 23212, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236113, 2464, 4562, 5, 23220, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236114, 2464, 4562, 5, 23221, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236115, 2464, 4562, 5, 23233, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236116, 2464, 4562, 5, 23239, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236117, 2464, 4562, 5, 23241, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236118, 2464, 4562, 5, 23282, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236119, 2464, 4562, 5, 23284, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236120, 2464, 4562, 5, 23289, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236121, 2464, 4562, 5, 23291, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236122, 2464, 4562, 5, 23292, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236123, 2464, 4562, 5, 23293, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236124, 2464, 4562, 5, 23294, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236125, 2464, 4562, 5, 23295, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236126, 2464, 4562, 5, 23304, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236127, 2464, 4562, 5, 23314, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236128, 2464, 4562, 5, 23320, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236129, 2464, 4562, 5, 23321, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236130, 2464, 4562, 5, 23322, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236131, 2464, 4562, 5, 23323, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236132, 2464, 4562, 5, 23326, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236133, 2464, 4562, 5, 23362, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236134, 2464, 4562, 5, 23364, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236135, 2464, 4562, 5, 23366, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236136, 2464, 4562, 5, 23369, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236137, 2464, 4562, 5, 23371, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236138, 2464, 4562, 5, 23387, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236139, 2464, 4562, 5, 23389, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236140, 2464, 4562, 5, 23401, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236141, 2464, 4562, 5, 23411, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236142, 2464, 4562, 5, 23412, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236143, 2464, 4562, 5, 23414, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236144, 2464, 4562, 5, 23417, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236145, 2464, 4562, 5, 23438, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236146, 2464, 4562, 5, 23443, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236147, 2464, 4562, 5, 23447, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236148, 2464, 4562, 5, 23468, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236149, 2464, 4562, 5, 23469, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236150, 2464, 4562, 5, 23504, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236151, 2464, 4562, 5, 23548, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236152, 2464, 4562, 5, 23551, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236153, 2464, 4562, 5, 23552, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236154, 2464, 4562, 5, 23553, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236155, 2464, 4562, 5, 23565, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236156, 2464, 4562, 5, 23570, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236157, 2464, 4562, 5, 23571, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236158, 2464, 4562, 5, 23579, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236159, 2464, 4562, 5, 23580, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236160, 2464, 4562, 5, 23581, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236161, 2464, 4562, 5, 23582, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236162, 2464, 4562, 5, 23595, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236163, 2464, 4562, 5, 23615, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236164, 2464, 4562, 5, 23622, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236165, 2465, 4562, 5, 22766, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236166, 2465, 4562, 5, 22780, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236167, 2465, 4562, 5, 22810, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236168, 2465, 4562, 5, 22843, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236169, 2465, 4562, 5, 22868, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236170, 2465, 4562, 5, 22869, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236171, 2465, 4562, 5, 22871, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236172, 2465, 4562, 5, 22872, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236173, 2465, 4562, 5, 22873, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236174, 2465, 4562, 5, 22874, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236175, 2465, 4562, 5, 22951, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236176, 2465, 4562, 5, 22952, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236177, 2465, 4562, 5, 22953, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236178, 2465, 4562, 5, 22956, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236179, 2465, 4562, 5, 22990, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236180, 2465, 4562, 5, 22994, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236181, 2465, 4562, 5, 22995, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236182, 2465, 4562, 5, 23031, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236183, 2465, 4562, 5, 23047, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236184, 2465, 4562, 5, 23056, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236185, 2465, 4562, 5, 23060, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236186, 2465, 4562, 5, 23087, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236187, 2465, 4562, 5, 23088, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236188, 2465, 4562, 5, 23105, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236189, 2465, 4562, 5, 23106, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236190, 2465, 4562, 5, 23107, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236191, 2465, 4562, 5, 23108, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236192, 2465, 4562, 5, 23109, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236193, 2465, 4562, 5, 23138, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236194, 2465, 4562, 5, 23139, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236195, 2465, 4562, 5, 23189, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236196, 2465, 4562, 5, 23347, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236197, 2465, 4562, 5, 23368, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236198, 2465, 4562, 5, 23372, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236199, 2465, 4562, 5, 23373, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236200, 2465, 4562, 5, 23409, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236201, 2465, 4562, 5, 23424, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236202, 2465, 4562, 5, 23439, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236203, 2465, 4562, 5, 23440, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236204, 2465, 4562, 5, 23476, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236205, 2465, 4562, 5, 23561, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236206, 2465, 4562, 5, 23576, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236207, 2465, 4562, 5, 23578, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236208, 2465, 4562, 5, 23590, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236209, 2465, 4562, 5, 23621, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236210, 2466, 4563, 5, 22747, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236211, 2466, 4563, 5, 22800, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236212, 2466, 4563, 5, 22804, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236213, 2466, 4563, 5, 22808, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236214, 2466, 4563, 5, 22809, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236215, 2466, 4563, 5, 22813, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236216, 2466, 4563, 5, 22837, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236217, 2466, 4563, 5, 22838, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236218, 2466, 4563, 5, 22839, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236219, 2466, 4563, 5, 22840, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236220, 2466, 4563, 5, 22861, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236221, 2466, 4563, 5, 22862, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236222, 2466, 4563, 5, 22863, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236223, 2466, 4563, 5, 22864, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236224, 2466, 4563, 5, 22867, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236225, 2466, 4563, 5, 22884, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236226, 2466, 4563, 5, 22921, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236227, 2466, 4563, 5, 22970, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236228, 2466, 4563, 5, 22982, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236229, 2466, 4563, 5, 22989, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236230, 2466, 4563, 5, 23111, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236231, 2466, 4563, 5, 23243, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236232, 2466, 4563, 5, 23376, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236233, 2466, 4563, 5, 23541, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236234, 2466, 4563, 5, 23545, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236235, 2466, 4563, 5, 23613, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236236, 2466, 4563, 5, 23614, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236237, 2466, 4563, 5, 22745, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236238, 2467, 4563, 5, 22748, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236239, 2467, 4563, 5, 22753, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236240, 2467, 4563, 5, 22757, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236241, 2467, 4563, 5, 22760, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236242, 2467, 4563, 5, 22761, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236243, 2467, 4563, 5, 22769, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236244, 2467, 4563, 5, 22772, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236245, 2467, 4563, 5, 22778, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236246, 2467, 4563, 5, 22789, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236247, 2467, 4563, 5, 22790, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236248, 2467, 4563, 5, 22791, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236249, 2467, 4563, 5, 22793, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236250, 2467, 4563, 5, 22794, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236251, 2467, 4563, 5, 22795, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236252, 2467, 4563, 5, 22796, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236253, 2467, 4563, 5, 22797, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236254, 2467, 4563, 5, 22807, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236255, 2467, 4563, 5, 22813, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236256, 2467, 4563, 5, 22814, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236257, 2467, 4563, 5, 22818, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236258, 2467, 4563, 5, 22819, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236259, 2467, 4563, 5, 22820, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236260, 2467, 4563, 5, 22824, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236261, 2467, 4563, 5, 22827, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236262, 2467, 4563, 5, 22828, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236263, 2467, 4563, 5, 22829, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236264, 2467, 4563, 5, 22831, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236265, 2467, 4563, 5, 22832, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236266, 2467, 4563, 5, 22833, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236267, 2467, 4563, 5, 22835, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236268, 2467, 4563, 5, 22836, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236269, 2467, 4563, 5, 22843, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236270, 2467, 4563, 5, 22844, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236271, 2467, 4563, 5, 22858, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236272, 2467, 4563, 5, 22859, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236273, 2467, 4563, 5, 22861, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236274, 2467, 4563, 5, 22862, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236275, 2467, 4563, 5, 22863, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236276, 2467, 4563, 5, 22864, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236277, 2467, 4563, 5, 22866, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236278, 2467, 4563, 5, 22867, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236279, 2467, 4563, 5, 22891, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236280, 2467, 4563, 5, 22894, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236281, 2467, 4563, 5, 22895, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236282, 2467, 4563, 5, 22896, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236283, 2467, 4563, 5, 22897, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236284, 2467, 4563, 5, 22898, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236285, 2467, 4563, 5, 22901, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236286, 2467, 4563, 5, 22903, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236287, 2467, 4563, 5, 22904, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236288, 2467, 4563, 5, 22905, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236289, 2467, 4563, 5, 22910, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236290, 2467, 4563, 5, 22911, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236291, 2467, 4563, 5, 22912, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236292, 2467, 4563, 5, 22916, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236293, 2467, 4563, 5, 22917, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236294, 2467, 4563, 5, 22919, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236295, 2467, 4563, 5, 22921, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236296, 2467, 4563, 5, 22924, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236297, 2467, 4563, 5, 22925, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236298, 2467, 4563, 5, 22926, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236299, 2467, 4563, 5, 22927, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236300, 2467, 4563, 5, 22928, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236301, 2467, 4563, 5, 22929, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236302, 2467, 4563, 5, 22931, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236303, 2467, 4563, 5, 22933, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236304, 2467, 4563, 5, 22935, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236305, 2467, 4563, 5, 22945, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236306, 2467, 4563, 5, 22948, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236307, 2467, 4563, 5, 22949, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236308, 2467, 4563, 5, 22954, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236309, 2467, 4563, 5, 22955, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236310, 2467, 4563, 5, 22956, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236311, 2467, 4563, 5, 22959, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236312, 2467, 4563, 5, 22960, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236313, 2467, 4563, 5, 22961, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236314, 2467, 4563, 5, 22962, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236315, 2467, 4563, 5, 22963, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236316, 2467, 4563, 5, 22964, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236317, 2467, 4563, 5, 22965, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236318, 2467, 4563, 5, 22966, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236319, 2467, 4563, 5, 22967, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236320, 2467, 4563, 5, 22970, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236321, 2467, 4563, 5, 22977, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236322, 2467, 4563, 5, 22979, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236323, 2467, 4563, 5, 22988, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236324, 2467, 4563, 5, 22991, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236325, 2467, 4563, 5, 22996, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236326, 2467, 4563, 5, 22997, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236327, 2467, 4563, 5, 22998, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236328, 2467, 4563, 5, 23002, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236329, 2467, 4563, 5, 23003, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236330, 2467, 4563, 5, 23004, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236331, 2467, 4563, 5, 23005, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236332, 2467, 4563, 5, 23006, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236333, 2467, 4563, 5, 23007, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236334, 2467, 4563, 5, 23013, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236335, 2467, 4563, 5, 23014, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236336, 2467, 4563, 5, 23016, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236337, 2467, 4563, 5, 23017, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236338, 2467, 4563, 5, 23019, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236339, 2467, 4563, 5, 23020, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236340, 2467, 4563, 5, 23021, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236341, 2467, 4563, 5, 23022, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236342, 2467, 4563, 5, 23023, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236343, 2467, 4563, 5, 23024, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236344, 2467, 4563, 5, 23025, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236345, 2467, 4563, 5, 23026, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236346, 2467, 4563, 5, 23027, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236347, 2467, 4563, 5, 23028, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236348, 2467, 4563, 5, 23029, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236349, 2467, 4563, 5, 23030, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236350, 2467, 4563, 5, 23037, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236351, 2467, 4563, 5, 23038, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236352, 2467, 4563, 5, 23039, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236353, 2467, 4563, 5, 23040, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236354, 2467, 4563, 5, 23041, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236355, 2467, 4563, 5, 23042, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236356, 2467, 4563, 5, 23043, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236357, 2467, 4563, 5, 23044, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236358, 2467, 4563, 5, 23045, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236359, 2467, 4563, 5, 23046, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236360, 2467, 4563, 5, 23048, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236361, 2467, 4563, 5, 23050, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236362, 2467, 4563, 5, 23051, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236363, 2467, 4563, 5, 23052, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236364, 2467, 4563, 5, 23053, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236365, 2467, 4563, 5, 23055, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236366, 2467, 4563, 5, 23059, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236367, 2467, 4563, 5, 23062, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236368, 2467, 4563, 5, 23063, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236369, 2467, 4563, 5, 23065, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236370, 2467, 4563, 5, 23067, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236371, 2467, 4563, 5, 23068, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236372, 2467, 4563, 5, 23069, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236373, 2467, 4563, 5, 23071, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236374, 2467, 4563, 5, 23075, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236375, 2467, 4563, 5, 23077, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236376, 2467, 4563, 5, 23078, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236377, 2467, 4563, 5, 23079, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236378, 2467, 4563, 5, 23080, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236379, 2467, 4563, 5, 23081, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236380, 2467, 4563, 5, 23082, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236381, 2467, 4563, 5, 23083, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236382, 2467, 4563, 5, 23084, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236383, 2467, 4563, 5, 23086, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236384, 2467, 4563, 5, 23091, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236385, 2467, 4563, 5, 23092, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236386, 2467, 4563, 5, 23097, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236387, 2467, 4563, 5, 23103, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236388, 2467, 4563, 5, 23104, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236389, 2467, 4563, 5, 23112, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236390, 2467, 4563, 5, 23113, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236391, 2467, 4563, 5, 23115, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236392, 2467, 4563, 5, 23119, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236393, 2467, 4563, 5, 23122, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236394, 2467, 4563, 5, 23141, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236395, 2467, 4563, 5, 23143, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236396, 2467, 4563, 5, 23144, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236397, 2467, 4563, 5, 23156, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236398, 2467, 4563, 5, 23157, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236399, 2467, 4563, 5, 23168, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236400, 2467, 4563, 5, 23177, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236401, 2467, 4563, 5, 23180, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236402, 2467, 4563, 5, 23184, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236403, 2467, 4563, 5, 23192, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236404, 2467, 4563, 5, 23193, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236405, 2467, 4563, 5, 23194, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236406, 2467, 4563, 5, 23202, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236407, 2467, 4563, 5, 23203, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236408, 2467, 4563, 5, 23219, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236409, 2467, 4563, 5, 23231, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236410, 2467, 4563, 5, 23245, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236411, 2467, 4563, 5, 23246, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236412, 2467, 4563, 5, 23247, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236413, 2467, 4563, 5, 23248, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236414, 2467, 4563, 5, 23249, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236415, 2467, 4563, 5, 23250, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236416, 2467, 4563, 5, 23251, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236417, 2467, 4563, 5, 23253, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236418, 2467, 4563, 5, 23254, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236419, 2467, 4563, 5, 23255, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236420, 2467, 4563, 5, 23256, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236421, 2467, 4563, 5, 23257, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236422, 2467, 4563, 5, 23258, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236423, 2467, 4563, 5, 23259, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236424, 2467, 4563, 5, 23260, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236425, 2467, 4563, 5, 23261, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236426, 2467, 4563, 5, 23262, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236427, 2467, 4563, 5, 23263, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236428, 2467, 4563, 5, 23267, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236429, 2467, 4563, 5, 23270, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236430, 2467, 4563, 5, 23274, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236431, 2467, 4563, 5, 23276, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236432, 2467, 4563, 5, 23296, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236433, 2467, 4563, 5, 23297, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236434, 2467, 4563, 5, 23298, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236435, 2467, 4563, 5, 23299, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236436, 2467, 4563, 5, 23300, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236437, 2467, 4563, 5, 23306, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236438, 2467, 4563, 5, 23329, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236439, 2467, 4563, 5, 23331, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236440, 2467, 4563, 5, 23333, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236441, 2467, 4563, 5, 23334, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236442, 2467, 4563, 5, 23335, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236443, 2467, 4563, 5, 23336, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236444, 2467, 4563, 5, 23337, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236445, 2467, 4563, 5, 23338, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236446, 2467, 4563, 5, 23339, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236447, 2467, 4563, 5, 23340, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236448, 2467, 4563, 5, 23341, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236449, 2467, 4563, 5, 23349, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236450, 2467, 4563, 5, 23350, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236451, 2467, 4563, 5, 23351, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236452, 2467, 4563, 5, 23352, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236453, 2467, 4563, 5, 23353, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236454, 2467, 4563, 5, 23354, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236455, 2467, 4563, 5, 23355, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236456, 2467, 4563, 5, 23356, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236457, 2467, 4563, 5, 23357, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236458, 2467, 4563, 5, 23376, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236459, 2467, 4563, 5, 23379, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236460, 2467, 4563, 5, 23400, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236461, 2467, 4563, 5, 23427, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236462, 2467, 4563, 5, 23441, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236463, 2467, 4563, 5, 23442, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236464, 2467, 4563, 5, 23445, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236465, 2467, 4563, 5, 23453, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236466, 2467, 4563, 5, 23454, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236467, 2467, 4563, 5, 23455, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236468, 2467, 4563, 5, 23456, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236469, 2467, 4563, 5, 23480, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236470, 2467, 4563, 5, 23491, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236471, 2467, 4563, 5, 23497, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236472, 2467, 4563, 5, 23505, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236473, 2467, 4563, 5, 23510, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236474, 2467, 4563, 5, 23511, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236475, 2467, 4563, 5, 23512, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236476, 2467, 4563, 5, 23530, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236477, 2467, 4563, 5, 23531, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236478, 2467, 4563, 5, 23532, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236479, 2467, 4563, 5, 23542, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236480, 2467, 4563, 5, 23584, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236481, 2467, 4563, 5, 23588, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236482, 2467, 4563, 5, 23589, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236483, 2467, 4563, 5, 23590, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236484, 2467, 4563, 5, 23593, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236485, 2467, 4563, 5, 23594, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236486, 2467, 4563, 5, 23597, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236487, 2467, 4563, 5, 23598, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236488, 2467, 4563, 5, 23602, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236489, 2467, 4563, 5, 23604, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236490, 2467, 4563, 5, 23617, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236491, 2467, 4563, 5, 23618, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236492, 2467, 4563, 5, 23619, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236493, 2467, 4563, 5, 23620, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236494, 2467, 4563, 5, 23624, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236495, 2467, 4563, 5, 22745, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236496, 2468, 4563, 5, 22746, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236497, 2468, 4563, 5, 22747, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236498, 2468, 4563, 5, 22756, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236499, 2468, 4563, 5, 22762, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236500, 2468, 4563, 5, 22775, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236501, 2468, 4563, 5, 22804, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236502, 2468, 4563, 5, 22808, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236503, 2468, 4563, 5, 22809, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236504, 2468, 4563, 5, 22813, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236505, 2468, 4563, 5, 22823, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236506, 2468, 4563, 5, 22825, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236507, 2468, 4563, 5, 22881, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236508, 2468, 4563, 5, 22882, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236509, 2468, 4563, 5, 22883, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236510, 2468, 4563, 5, 22884, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236511, 2468, 4563, 5, 22903, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236512, 2468, 4563, 5, 22904, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236513, 2468, 4563, 5, 22905, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236514, 2468, 4563, 5, 22981, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236515, 2468, 4563, 5, 23064, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236516, 2468, 4563, 5, 23574, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236517, 2468, 4563, 5, 23587, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236518, 2468, 4563, 5, 22745, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236519, 2469, 4563, 5, 22748, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236520, 2469, 4563, 5, 22906, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236521, 2469, 4563, 5, 22908, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236522, 2469, 4563, 5, 22910, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236523, 2469, 4563, 5, 22911, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236524, 2469, 4563, 5, 22912, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236525, 2469, 4563, 5, 22913, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236526, 2469, 4563, 5, 22914, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236527, 2469, 4563, 5, 22929, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236528, 2469, 4563, 5, 22930, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236529, 2469, 4563, 5, 22931, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236530, 2469, 4563, 5, 22932, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236531, 2469, 4563, 5, 22933, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236532, 2469, 4563, 5, 22936, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236533, 2469, 4563, 5, 22937, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236534, 2469, 4563, 5, 22938, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236535, 2469, 4563, 5, 22939, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236536, 2469, 4563, 5, 22940, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236537, 2469, 4563, 5, 22941, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236538, 2469, 4563, 5, 22943, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236539, 2469, 4563, 5, 22944, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236540, 2469, 4563, 5, 22946, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236541, 2469, 4563, 5, 22947, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236542, 2469, 4563, 5, 22948, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236543, 2469, 4563, 5, 22949, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236544, 2469, 4563, 5, 22950, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236545, 2469, 4563, 5, 22972, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236546, 2469, 4563, 5, 22973, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236547, 2469, 4563, 5, 22974, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236548, 2469, 4563, 5, 22975, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236549, 2469, 4563, 5, 22976, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236550, 2469, 4563, 5, 22977, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236551, 2469, 4563, 5, 22980, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236552, 2469, 4563, 5, 22991, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236553, 2469, 4563, 5, 22993, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236554, 2469, 4563, 5, 22999, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236555, 2469, 4563, 5, 23000, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236556, 2469, 4563, 5, 23001, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236557, 2469, 4563, 5, 23008, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236558, 2469, 4563, 5, 23016, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236559, 2469, 4563, 5, 23017, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236560, 2469, 4563, 5, 23018, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236561, 2469, 4563, 5, 23019, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236562, 2469, 4563, 5, 23020, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236563, 2469, 4563, 5, 23021, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236564, 2469, 4563, 5, 23058, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236565, 2469, 4563, 5, 23059, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236566, 2469, 4563, 5, 23075, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236567, 2469, 4563, 5, 23095, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236568, 2469, 4563, 5, 23103, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236569, 2469, 4563, 5, 23110, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236570, 2469, 4563, 5, 23111, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236571, 2469, 4563, 5, 23113, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236572, 2469, 4563, 5, 23120, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236573, 2469, 4563, 5, 23121, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236574, 2469, 4563, 5, 23128, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236575, 2469, 4563, 5, 23129, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236576, 2469, 4563, 5, 23130, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236577, 2469, 4563, 5, 23131, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236578, 2469, 4563, 5, 23132, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236579, 2469, 4563, 5, 23133, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236580, 2469, 4563, 5, 23134, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236581, 2469, 4563, 5, 23135, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236582, 2469, 4563, 5, 23137, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236583, 2469, 4563, 5, 23145, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236584, 2469, 4563, 5, 23147, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236585, 2469, 4563, 5, 23155, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236586, 2469, 4563, 5, 23156, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236587, 2469, 4563, 5, 23165, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236588, 2469, 4563, 5, 23167, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236589, 2469, 4563, 5, 23169, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236590, 2469, 4563, 5, 23170, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236591, 2469, 4563, 5, 23171, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236592, 2469, 4563, 5, 23172, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236593, 2469, 4563, 5, 23174, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236594, 2469, 4563, 5, 23175, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236595, 2469, 4563, 5, 23179, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236596, 2469, 4563, 5, 23183, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236597, 2469, 4563, 5, 23184, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236598, 2469, 4563, 5, 23185, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236599, 2469, 4563, 5, 23186, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236600, 2469, 4563, 5, 23187, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236601, 2469, 4563, 5, 23188, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236602, 2469, 4563, 5, 23190, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236603, 2469, 4563, 5, 23191, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236604, 2469, 4563, 5, 23201, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236605, 2469, 4563, 5, 23204, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236606, 2469, 4563, 5, 23205, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236607, 2469, 4563, 5, 23206, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236608, 2469, 4563, 5, 23215, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236609, 2469, 4563, 5, 23222, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236610, 2469, 4563, 5, 23223, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236611, 2469, 4563, 5, 23244, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236612, 2469, 4563, 5, 23263, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236613, 2469, 4563, 5, 23264, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236614, 2469, 4563, 5, 23265, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236615, 2469, 4563, 5, 23266, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236616, 2469, 4563, 5, 23267, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236617, 2469, 4563, 5, 23269, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236618, 2469, 4563, 5, 23270, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236619, 2469, 4563, 5, 23271, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236620, 2469, 4563, 5, 23272, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236621, 2469, 4563, 5, 23275, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236622, 2469, 4563, 5, 23276, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236623, 2469, 4563, 5, 23303, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236624, 2469, 4563, 5, 23330, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236625, 2469, 4563, 5, 23331, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236626, 2469, 4563, 5, 23332, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236627, 2469, 4563, 5, 23333, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236628, 2469, 4563, 5, 23359, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236629, 2469, 4563, 5, 23360, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236630, 2469, 4563, 5, 23361, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236631, 2469, 4563, 5, 23370, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236632, 2469, 4563, 5, 23380, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236633, 2469, 4563, 5, 23381, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236634, 2469, 4563, 5, 23382, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236635, 2469, 4563, 5, 23387, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236636, 2469, 4563, 5, 23388, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236637, 2469, 4563, 5, 23391, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236638, 2469, 4563, 5, 23392, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236639, 2469, 4563, 5, 23393, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236640, 2469, 4563, 5, 23394, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236641, 2469, 4563, 5, 23395, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236642, 2469, 4563, 5, 23397, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236643, 2469, 4563, 5, 23402, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236644, 2469, 4563, 5, 23403, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236645, 2469, 4563, 5, 23404, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236646, 2469, 4563, 5, 23405, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236647, 2469, 4563, 5, 23406, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236648, 2469, 4563, 5, 23407, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236649, 2469, 4563, 5, 23408, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236650, 2469, 4563, 5, 23415, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236651, 2469, 4563, 5, 23419, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236652, 2469, 4563, 5, 23420, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236653, 2469, 4563, 5, 23421, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236654, 2469, 4563, 5, 23422, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236655, 2469, 4563, 5, 23423, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236656, 2469, 4563, 5, 23425, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236657, 2469, 4563, 5, 23428, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236658, 2469, 4563, 5, 23429, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236659, 2469, 4563, 5, 23430, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236660, 2469, 4563, 5, 23432, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236661, 2469, 4563, 5, 23433, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236662, 2469, 4563, 5, 23434, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236663, 2469, 4563, 5, 23435, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236664, 2469, 4563, 5, 23436, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236665, 2469, 4563, 5, 23437, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236666, 2469, 4563, 5, 23438, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236667, 2469, 4563, 5, 23443, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236668, 2469, 4563, 5, 23444, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236669, 2469, 4563, 5, 23459, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236670, 2469, 4563, 5, 23460, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236671, 2469, 4563, 5, 23461, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236672, 2469, 4563, 5, 23462, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236673, 2469, 4563, 5, 23463, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236674, 2469, 4563, 5, 23464, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236675, 2469, 4563, 5, 23465, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236676, 2469, 4563, 5, 23466, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236677, 2469, 4563, 5, 23467, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236678, 2469, 4563, 5, 23468, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236679, 2469, 4563, 5, 23469, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236680, 2469, 4563, 5, 23477, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236681, 2469, 4563, 5, 23478, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236682, 2469, 4563, 5, 23479, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236683, 2469, 4563, 5, 23480, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236684, 2469, 4563, 5, 23481, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236685, 2469, 4563, 5, 23482, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236686, 2469, 4563, 5, 23483, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236687, 2469, 4563, 5, 23484, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236688, 2469, 4563, 5, 23485, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236689, 2469, 4563, 5, 23486, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236690, 2469, 4563, 5, 23487, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236691, 2469, 4563, 5, 23488, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236692, 2469, 4563, 5, 23489, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236693, 2469, 4563, 5, 23490, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236694, 2469, 4563, 5, 23494, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236695, 2469, 4563, 5, 23495, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236696, 2469, 4563, 5, 23496, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236697, 2469, 4563, 5, 23500, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236698, 2469, 4563, 5, 23506, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236699, 2469, 4563, 5, 23507, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236700, 2469, 4563, 5, 23508, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236701, 2469, 4563, 5, 23509, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236702, 2469, 4563, 5, 23516, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236703, 2469, 4563, 5, 23517, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236704, 2469, 4563, 5, 23518, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236705, 2469, 4563, 5, 23519, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236706, 2469, 4563, 5, 23521, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236707, 2469, 4563, 5, 23522, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236708, 2469, 4563, 5, 23523, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236709, 2469, 4563, 5, 23527, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236710, 2469, 4563, 5, 23528, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236711, 2469, 4563, 5, 23529, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236712, 2469, 4563, 5, 23530, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236713, 2469, 4563, 5, 23531, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236714, 2469, 4563, 5, 23533, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236715, 2469, 4563, 5, 23534, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236716, 2469, 4563, 5, 23535, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236717, 2469, 4563, 5, 23536, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236718, 2469, 4563, 5, 23537, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236719, 2469, 4563, 5, 23538, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236720, 2469, 4563, 5, 23550, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236721, 2469, 4563, 5, 23555, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236722, 2469, 4563, 5, 23559, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236723, 2469, 4563, 5, 23560, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236724, 2469, 4563, 5, 23569, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236725, 2469, 4563, 5, 23583, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236726, 2469, 4563, 5, 23585, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236727, 2469, 4563, 5, 23586, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236728, 2469, 4563, 5, 23591, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236729, 2469, 4563, 5, 23592, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236730, 2469, 4563, 5, 23598, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236731, 2469, 4563, 5, 23600, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236732, 2469, 4563, 5, 23601, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236733, 2469, 4563, 5, 23602, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236734, 2469, 4563, 5, 23605, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236735, 2469, 4563, 5, 23609, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236736, 2469, 4563, 5, 23611, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236737, 2470, 4563, 5, 22748, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236738, 2470, 4563, 5, 22753, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236739, 2470, 4563, 5, 22808, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236740, 2470, 4563, 5, 22809, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236741, 2470, 4563, 5, 22813, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236742, 2470, 4563, 5, 22861, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236743, 2470, 4563, 5, 22862, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236744, 2470, 4563, 5, 22863, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236745, 2470, 4563, 5, 22864, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236746, 2470, 4563, 5, 22887, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236747, 2470, 4563, 5, 22891, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236748, 2470, 4563, 5, 22893, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236749, 2470, 4563, 5, 22894, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236750, 2470, 4563, 5, 22901, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236751, 2470, 4563, 5, 22908, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236752, 2470, 4563, 5, 22910, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236753, 2470, 4563, 5, 22911, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236754, 2470, 4563, 5, 22912, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236755, 2470, 4563, 5, 22916, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236756, 2470, 4563, 5, 22917, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236757, 2470, 4563, 5, 22919, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236758, 2470, 4563, 5, 22924, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236759, 2470, 4563, 5, 22925, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236760, 2470, 4563, 5, 22936, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236761, 2470, 4563, 5, 22937, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236762, 2470, 4563, 5, 22938, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236763, 2470, 4563, 5, 22939, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236764, 2470, 4563, 5, 22940, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236765, 2470, 4563, 5, 22941, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236766, 2470, 4563, 5, 22942, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236767, 2470, 4563, 5, 22943, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236768, 2470, 4563, 5, 22944, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236769, 2470, 4563, 5, 22945, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236770, 2470, 4563, 5, 22946, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236771, 2470, 4563, 5, 22947, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236772, 2470, 4563, 5, 22948, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236773, 2470, 4563, 5, 22949, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236774, 2470, 4563, 5, 22950, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236775, 2470, 4563, 5, 22961, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236776, 2470, 4563, 5, 22962, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236777, 2470, 4563, 5, 22963, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236778, 2470, 4563, 5, 22964, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236779, 2470, 4563, 5, 22965, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236780, 2470, 4563, 5, 22966, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236781, 2470, 4563, 5, 22977, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236782, 2470, 4563, 5, 22980, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236783, 2470, 4563, 5, 23007, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236784, 2470, 4563, 5, 23008, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236785, 2470, 4563, 5, 23022, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236786, 2470, 4563, 5, 23023, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236787, 2470, 4563, 5, 23024, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236788, 2470, 4563, 5, 23025, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236789, 2470, 4563, 5, 23026, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236790, 2470, 4563, 5, 23027, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236791, 2470, 4563, 5, 23028, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236792, 2470, 4563, 5, 23029, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236793, 2470, 4563, 5, 23030, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236794, 2470, 4563, 5, 23037, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236795, 2470, 4563, 5, 23038, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236796, 2470, 4563, 5, 23039, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236797, 2470, 4563, 5, 23040, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236798, 2470, 4563, 5, 23041, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236799, 2470, 4563, 5, 23043, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236800, 2470, 4563, 5, 23044, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236801, 2470, 4563, 5, 23045, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236802, 2470, 4563, 5, 23046, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236803, 2470, 4563, 5, 23055, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236804, 2470, 4563, 5, 23065, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236805, 2470, 4563, 5, 23067, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236806, 2470, 4563, 5, 23068, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236807, 2470, 4563, 5, 23069, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236808, 2470, 4563, 5, 23075, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236809, 2470, 4563, 5, 23077, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236810, 2470, 4563, 5, 23078, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236811, 2470, 4563, 5, 23079, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236812, 2470, 4563, 5, 23080, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236813, 2470, 4563, 5, 23089, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236814, 2470, 4563, 5, 23090, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236815, 2470, 4563, 5, 23091, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236816, 2470, 4563, 5, 23092, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236817, 2470, 4563, 5, 23104, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236818, 2470, 4563, 5, 23112, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236819, 2470, 4563, 5, 23128, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236820, 2470, 4563, 5, 23129, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236821, 2470, 4563, 5, 23148, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236822, 2470, 4563, 5, 23156, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236823, 2470, 4563, 5, 23173, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236824, 2470, 4563, 5, 23202, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236825, 2470, 4563, 5, 23203, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236826, 2470, 4563, 5, 23243, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236827, 2470, 4563, 5, 23270, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236828, 2470, 4563, 5, 23273, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236829, 2470, 4563, 5, 23306, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236830, 2470, 4563, 5, 23334, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236831, 2470, 4563, 5, 23335, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236832, 2470, 4563, 5, 23336, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236833, 2470, 4563, 5, 23337, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236834, 2470, 4563, 5, 23338, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236835, 2470, 4563, 5, 23339, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236836, 2470, 4563, 5, 23340, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236837, 2470, 4563, 5, 23341, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236838, 2470, 4563, 5, 23349, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236839, 2470, 4563, 5, 23350, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236840, 2470, 4563, 5, 23351, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236841, 2470, 4563, 5, 23352, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236842, 2470, 4563, 5, 23353, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236843, 2470, 4563, 5, 23354, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236844, 2470, 4563, 5, 23355, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236845, 2470, 4563, 5, 23356, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236846, 2470, 4563, 5, 23357, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236847, 2470, 4563, 5, 23358, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236848, 2470, 4563, 5, 23359, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236849, 2470, 4563, 5, 23360, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236850, 2470, 4563, 5, 23361, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236851, 2470, 4563, 5, 23365, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236852, 2470, 4563, 5, 23374, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236853, 2470, 4563, 5, 23379, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236854, 2470, 4563, 5, 23380, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236855, 2470, 4563, 5, 23381, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236856, 2470, 4563, 5, 23382, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236857, 2470, 4563, 5, 23385, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236858, 2470, 4563, 5, 23391, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236859, 2470, 4563, 5, 23392, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236860, 2470, 4563, 5, 23393, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236861, 2470, 4563, 5, 23394, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236862, 2470, 4563, 5, 23395, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236863, 2470, 4563, 5, 23396, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236864, 2470, 4563, 5, 23397, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236865, 2470, 4563, 5, 23400, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236866, 2470, 4563, 5, 23402, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236867, 2470, 4563, 5, 23403, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236868, 2470, 4563, 5, 23404, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236869, 2470, 4563, 5, 23405, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236870, 2470, 4563, 5, 23406, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236871, 2470, 4563, 5, 23407, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236872, 2470, 4563, 5, 23408, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236873, 2470, 4563, 5, 23415, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236874, 2470, 4563, 5, 23419, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236875, 2470, 4563, 5, 23420, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236876, 2470, 4563, 5, 23421, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236877, 2470, 4563, 5, 23422, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236878, 2470, 4563, 5, 23425, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236879, 2470, 4563, 5, 23427, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236880, 2470, 4563, 5, 23428, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236881, 2470, 4563, 5, 23429, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236882, 2470, 4563, 5, 23430, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236883, 2470, 4563, 5, 23431, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236884, 2470, 4563, 5, 23445, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236885, 2470, 4563, 5, 23453, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236886, 2470, 4563, 5, 23454, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236887, 2470, 4563, 5, 23455, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236888, 2470, 4563, 5, 23460, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236889, 2470, 4563, 5, 23461, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236890, 2470, 4563, 5, 23462, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236891, 2470, 4563, 5, 23463, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236892, 2470, 4563, 5, 23464, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236893, 2470, 4563, 5, 23466, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236894, 2470, 4563, 5, 23467, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236895, 2470, 4563, 5, 23478, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236896, 2470, 4563, 5, 23479, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236897, 2470, 4563, 5, 23481, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236898, 2470, 4563, 5, 23482, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236899, 2470, 4563, 5, 23485, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236900, 2470, 4563, 5, 23486, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236901, 2470, 4563, 5, 23487, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236902, 2470, 4563, 5, 23489, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236903, 2470, 4563, 5, 23491, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236904, 2470, 4563, 5, 23495, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236905, 2470, 4563, 5, 23496, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236906, 2470, 4563, 5, 23497, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236907, 2470, 4563, 5, 23506, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236908, 2470, 4563, 5, 23507, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236909, 2470, 4563, 5, 23508, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236910, 2470, 4563, 5, 23509, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236911, 2470, 4563, 5, 23510, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236912, 2470, 4563, 5, 23511, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236913, 2470, 4563, 5, 23512, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236914, 2470, 4563, 5, 23516, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236915, 2470, 4563, 5, 23517, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236916, 2470, 4563, 5, 23518, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236917, 2470, 4563, 5, 23519, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236918, 2470, 4563, 5, 23521, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236919, 2470, 4563, 5, 23522, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236920, 2470, 4563, 5, 23523, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236921, 2470, 4563, 5, 23525, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236922, 2470, 4563, 5, 23526, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236923, 2470, 4563, 5, 23530, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236924, 2470, 4563, 5, 23531, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236925, 2470, 4563, 5, 23532, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236926, 2470, 4563, 5, 23533, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236927, 2470, 4563, 5, 23534, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236928, 2470, 4563, 5, 23535, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236929, 2470, 4563, 5, 23536, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236930, 2470, 4563, 5, 23537, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236931, 2470, 4563, 5, 23538, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236932, 2470, 4563, 5, 23539, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236933, 2470, 4563, 5, 23540, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236934, 2470, 4563, 5, 23541, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236935, 2470, 4563, 5, 23542, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236936, 2470, 4563, 5, 23543, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236937, 2470, 4563, 5, 23544, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236938, 2470, 4563, 5, 23545, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236939, 2470, 4563, 5, 23550, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236940, 2470, 4563, 5, 23554, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236941, 2470, 4563, 5, 23555, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236942, 2470, 4563, 5, 23557, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236943, 2470, 4563, 5, 23558, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236944, 2470, 4563, 5, 23559, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236945, 2470, 4563, 5, 23562, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236946, 2470, 4563, 5, 23566, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236947, 2470, 4563, 5, 23567, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236948, 2470, 4563, 5, 23569, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236949, 2470, 4563, 5, 23573, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236950, 2470, 4563, 5, 23574, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236951, 2470, 4563, 5, 23575, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236952, 2470, 4563, 5, 23583, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236953, 2470, 4563, 5, 23584, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236954, 2470, 4563, 5, 23585, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236955, 2470, 4563, 5, 23586, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236956, 2470, 4563, 5, 23587, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236957, 2470, 4563, 5, 23588, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236958, 2470, 4563, 5, 23589, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236959, 2470, 4563, 5, 23591, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236960, 2470, 4563, 5, 23594, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236961, 2470, 4563, 5, 23596, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236962, 2470, 4563, 5, 23598, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236963, 2470, 4563, 5, 23599, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236964, 2470, 4563, 5, 23600, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236965, 2470, 4563, 5, 23601, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236966, 2470, 4563, 5, 23602, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236967, 2470, 4563, 5, 23603, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236968, 2470, 4563, 5, 23604, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236969, 2470, 4563, 5, 23605, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236970, 2470, 4563, 5, 23606, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236971, 2470, 4563, 5, 23607, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236972, 2470, 4563, 5, 23609, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236973, 2471, 4563, 5, 22749, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236974, 2471, 4563, 5, 22750, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236975, 2471, 4563, 5, 22764, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236976, 2471, 4563, 5, 22767, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236977, 2471, 4563, 5, 22779, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236978, 2471, 4563, 5, 22781, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236979, 2471, 4563, 5, 22782, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236980, 2471, 4563, 5, 22785, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236981, 2471, 4563, 5, 22799, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236982, 2471, 4563, 5, 22801, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236983, 2471, 4563, 5, 22802, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236984, 2471, 4563, 5, 22803, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236985, 2471, 4563, 5, 22805, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236986, 2471, 4563, 5, 22815, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236987, 2471, 4563, 5, 22816, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236988, 2471, 4563, 5, 22827, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236989, 2471, 4563, 5, 22828, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236990, 2471, 4563, 5, 22830, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236991, 2471, 4563, 5, 22842, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236992, 2471, 4563, 5, 22852, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236993, 2471, 4563, 5, 22854, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236994, 2471, 4563, 5, 22860, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236995, 2471, 4563, 5, 22866, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236996, 2471, 4563, 5, 22885, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236997, 2471, 4563, 5, 22886, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236998, 2471, 4563, 5, 22899, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (236999, 2471, 4563, 5, 22902, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237000, 2471, 4563, 5, 22909, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237001, 2471, 4563, 5, 22922, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237002, 2471, 4563, 5, 22978, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237003, 2471, 4563, 5, 22992, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237004, 2471, 4563, 5, 23010, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237005, 2471, 4563, 5, 23011, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237006, 2471, 4563, 5, 23012, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237007, 2471, 4563, 5, 23013, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237008, 2471, 4563, 5, 23032, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237009, 2471, 4563, 5, 23033, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237010, 2471, 4563, 5, 23034, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237011, 2471, 4563, 5, 23035, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237012, 2471, 4563, 5, 23036, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237013, 2471, 4563, 5, 23076, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237014, 2471, 4563, 5, 23094, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237015, 2471, 4563, 5, 23214, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237016, 2471, 4563, 5, 23278, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237017, 2471, 4563, 5, 23279, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237018, 2471, 4563, 5, 23280, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237019, 2471, 4563, 5, 23281, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237020, 2471, 4563, 5, 23282, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237021, 2471, 4563, 5, 23283, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237022, 2471, 4563, 5, 23284, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237023, 2471, 4563, 5, 23288, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237024, 2471, 4563, 5, 23289, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237025, 2471, 4563, 5, 23290, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237026, 2471, 4563, 5, 23291, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237027, 2471, 4563, 5, 23292, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237028, 2471, 4563, 5, 23293, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237029, 2471, 4563, 5, 23294, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237030, 2471, 4563, 5, 23295, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237031, 2471, 4563, 5, 23321, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237032, 2471, 4563, 5, 23322, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237033, 2471, 4563, 5, 23324, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237034, 2471, 4563, 5, 23326, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237035, 2471, 4563, 5, 23348, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237036, 2471, 4563, 5, 23369, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237037, 2471, 4563, 5, 23389, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237038, 2471, 4563, 5, 23410, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237039, 2471, 4563, 5, 23411, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237040, 2471, 4563, 5, 23412, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237041, 2471, 4563, 5, 23413, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237042, 2471, 4563, 5, 23414, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237043, 2471, 4563, 5, 23416, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237044, 2471, 4563, 5, 23418, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237045, 2471, 4563, 5, 23452, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237046, 2471, 4563, 5, 23504, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237047, 2471, 4563, 5, 23610, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237048, 2471, 4563, 5, 23612, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237049, 2471, 4563, 5, 23622, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237050, 2472, 4563, 5, 22749, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237051, 2472, 4563, 5, 22750, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237052, 2472, 4563, 5, 22763, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237053, 2472, 4563, 5, 22765, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237054, 2472, 4563, 5, 22767, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237055, 2472, 4563, 5, 22774, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237056, 2472, 4563, 5, 22779, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237057, 2472, 4563, 5, 22781, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237058, 2472, 4563, 5, 22785, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237059, 2472, 4563, 5, 22799, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237060, 2472, 4563, 5, 22801, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237061, 2472, 4563, 5, 22803, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237062, 2472, 4563, 5, 22814, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237063, 2472, 4563, 5, 22821, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237064, 2472, 4563, 5, 22822, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237065, 2472, 4563, 5, 22825, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237066, 2472, 4563, 5, 22841, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237067, 2472, 4563, 5, 22842, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237068, 2472, 4563, 5, 22845, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237069, 2472, 4563, 5, 22852, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237070, 2472, 4563, 5, 22853, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237071, 2472, 4563, 5, 22854, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237072, 2472, 4563, 5, 22865, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237073, 2472, 4563, 5, 22909, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237074, 2472, 4563, 5, 22923, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237075, 2472, 4563, 5, 22957, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237076, 2472, 4563, 5, 22971, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237077, 2472, 4563, 5, 22978, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237078, 2472, 4563, 5, 22992, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237079, 2472, 4563, 5, 23010, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237080, 2472, 4563, 5, 23011, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237081, 2472, 4563, 5, 23012, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237082, 2472, 4563, 5, 23015, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237083, 2472, 4563, 5, 23034, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237084, 2472, 4563, 5, 23036, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237085, 2472, 4563, 5, 23057, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237086, 2472, 4563, 5, 23064, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237087, 2472, 4563, 5, 23072, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237088, 2472, 4563, 5, 23110, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237089, 2472, 4563, 5, 23118, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237090, 2472, 4563, 5, 23121, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237091, 2472, 4563, 5, 23123, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237092, 2472, 4563, 5, 23124, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237093, 2472, 4563, 5, 23127, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237094, 2472, 4563, 5, 23149, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237095, 2472, 4563, 5, 23150, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237096, 2472, 4563, 5, 23159, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237097, 2472, 4563, 5, 23160, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237098, 2472, 4563, 5, 23161, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237099, 2472, 4563, 5, 23162, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237100, 2472, 4563, 5, 23163, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237101, 2472, 4563, 5, 23166, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237102, 2472, 4563, 5, 23170, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237103, 2472, 4563, 5, 23181, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237104, 2472, 4563, 5, 23182, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237105, 2472, 4563, 5, 23195, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237106, 2472, 4563, 5, 23196, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237107, 2472, 4563, 5, 23212, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237108, 2472, 4563, 5, 23233, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237109, 2472, 4563, 5, 23239, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237110, 2472, 4563, 5, 23241, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237111, 2472, 4563, 5, 23282, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237112, 2472, 4563, 5, 23284, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237113, 2472, 4563, 5, 23289, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237114, 2472, 4563, 5, 23291, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237115, 2472, 4563, 5, 23292, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237116, 2472, 4563, 5, 23293, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237117, 2472, 4563, 5, 23294, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237118, 2472, 4563, 5, 23295, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237119, 2472, 4563, 5, 23304, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237120, 2472, 4563, 5, 23314, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237121, 2472, 4563, 5, 23320, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237122, 2472, 4563, 5, 23321, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237123, 2472, 4563, 5, 23322, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237124, 2472, 4563, 5, 23323, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237125, 2472, 4563, 5, 23326, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237126, 2472, 4563, 5, 23362, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237127, 2472, 4563, 5, 23364, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237128, 2472, 4563, 5, 23369, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237129, 2472, 4563, 5, 23371, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237130, 2472, 4563, 5, 23387, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237131, 2472, 4563, 5, 23389, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237132, 2472, 4563, 5, 23411, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237133, 2472, 4563, 5, 23412, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237134, 2472, 4563, 5, 23414, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237135, 2472, 4563, 5, 23417, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237136, 2472, 4563, 5, 23438, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237137, 2472, 4563, 5, 23443, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237138, 2472, 4563, 5, 23447, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237139, 2472, 4563, 5, 23468, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237140, 2472, 4563, 5, 23469, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237141, 2472, 4563, 5, 23504, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237142, 2472, 4563, 5, 23551, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237143, 2472, 4563, 5, 23552, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237144, 2472, 4563, 5, 23553, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237145, 2472, 4563, 5, 23565, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237146, 2472, 4563, 5, 23570, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237147, 2472, 4563, 5, 23571, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237148, 2472, 4563, 5, 23579, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237149, 2472, 4563, 5, 23580, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237150, 2472, 4563, 5, 23581, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237151, 2472, 4563, 5, 23582, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237152, 2472, 4563, 5, 23595, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237153, 2472, 4563, 5, 23615, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237154, 2472, 4563, 5, 23622, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237155, 2473, 4563, 5, 22751, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237156, 2473, 4563, 5, 22768, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237157, 2473, 4563, 5, 22770, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237158, 2473, 4563, 5, 22771, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237159, 2473, 4563, 5, 22784, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237160, 2473, 4563, 5, 22786, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237161, 2473, 4563, 5, 22811, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237162, 2473, 4563, 5, 22812, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237163, 2473, 4563, 5, 22857, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237164, 2473, 4563, 5, 22907, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237165, 2473, 4563, 5, 22918, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237166, 2473, 4563, 5, 22956, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237167, 2473, 4563, 5, 22957, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237168, 2473, 4563, 5, 23302, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237169, 2473, 4563, 5, 23342, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237170, 2473, 4563, 5, 23417, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237171, 2473, 4563, 5, 23447, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237172, 2473, 4563, 5, 23590, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237173, 2474, 4563, 5, 22752, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237174, 2474, 4563, 5, 22754, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237175, 2474, 4563, 5, 22760, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237176, 2474, 4563, 5, 22761, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237177, 2474, 4563, 5, 22806, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237178, 2474, 4563, 5, 22819, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237179, 2474, 4563, 5, 22820, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237180, 2474, 4563, 5, 22829, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237181, 2474, 4563, 5, 22837, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237182, 2474, 4563, 5, 22838, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237183, 2474, 4563, 5, 22839, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237184, 2474, 4563, 5, 22840, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237185, 2474, 4563, 5, 22848, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237186, 2474, 4563, 5, 22849, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237187, 2474, 4563, 5, 22850, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237188, 2474, 4563, 5, 22851, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237189, 2474, 4563, 5, 22853, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237190, 2474, 4563, 5, 22855, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237191, 2474, 4563, 5, 22875, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237192, 2474, 4563, 5, 22887, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237193, 2474, 4563, 5, 22891, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237194, 2474, 4563, 5, 22892, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237195, 2474, 4563, 5, 22893, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237196, 2474, 4563, 5, 22894, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237197, 2474, 4563, 5, 22895, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237198, 2474, 4563, 5, 22897, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237199, 2474, 4563, 5, 22901, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237200, 2474, 4563, 5, 22917, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237201, 2474, 4563, 5, 22919, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237202, 2474, 4563, 5, 22967, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237203, 2474, 4563, 5, 22968, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237204, 2474, 4563, 5, 22987, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237205, 2474, 4563, 5, 23009, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237206, 2474, 4563, 5, 23054, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237207, 2474, 4563, 5, 23065, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237208, 2474, 4563, 5, 23066, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237209, 2474, 4563, 5, 23067, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237210, 2474, 4563, 5, 23068, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237211, 2474, 4563, 5, 23069, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237212, 2474, 4563, 5, 23089, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237213, 2474, 4563, 5, 23090, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237214, 2474, 4563, 5, 23098, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237215, 2474, 4563, 5, 23099, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237216, 2474, 4563, 5, 23100, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237217, 2474, 4563, 5, 23101, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237218, 2474, 4563, 5, 23114, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237219, 2474, 4563, 5, 23115, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237220, 2474, 4563, 5, 23148, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237221, 2474, 4563, 5, 23164, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237222, 2474, 4563, 5, 23173, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237223, 2474, 4563, 5, 23207, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237224, 2474, 4563, 5, 23208, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237225, 2474, 4563, 5, 23209, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237226, 2474, 4563, 5, 23210, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237227, 2474, 4563, 5, 23211, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237228, 2474, 4563, 5, 23217, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237229, 2474, 4563, 5, 23218, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237230, 2474, 4563, 5, 23243, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237231, 2474, 4563, 5, 23249, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237232, 2474, 4563, 5, 23250, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237233, 2474, 4563, 5, 23252, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237234, 2474, 4563, 5, 23260, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237235, 2474, 4563, 5, 23273, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237236, 2474, 4563, 5, 23285, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237237, 2474, 4563, 5, 23286, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237238, 2474, 4563, 5, 23287, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237239, 2474, 4563, 5, 23301, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237240, 2474, 4563, 5, 23325, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237241, 2474, 4563, 5, 23327, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237242, 2474, 4563, 5, 23328, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237243, 2474, 4563, 5, 23329, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237244, 2474, 4563, 5, 23350, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237245, 2474, 4563, 5, 23351, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237246, 2474, 4563, 5, 23352, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237247, 2474, 4563, 5, 23353, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237248, 2474, 4563, 5, 23357, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237249, 2474, 4563, 5, 23365, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237250, 2474, 4563, 5, 23374, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237251, 2474, 4563, 5, 23377, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237252, 2474, 4563, 5, 23378, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237253, 2474, 4563, 5, 23385, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237254, 2474, 4563, 5, 23396, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237255, 2474, 4563, 5, 23399, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237256, 2474, 4563, 5, 23426, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237257, 2474, 4563, 5, 23431, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237258, 2474, 4563, 5, 23448, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237259, 2474, 4563, 5, 23449, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237260, 2474, 4563, 5, 23450, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237261, 2474, 4563, 5, 23451, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237262, 2474, 4563, 5, 23453, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237263, 2474, 4563, 5, 23454, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237264, 2474, 4563, 5, 23455, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237265, 2474, 4563, 5, 23470, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237266, 2474, 4563, 5, 23539, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237267, 2474, 4563, 5, 23542, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237268, 2474, 4563, 5, 23544, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237269, 2474, 4563, 5, 23547, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237270, 2474, 4563, 5, 23551, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237271, 2474, 4563, 5, 23552, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237272, 2474, 4563, 5, 23556, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237273, 2474, 4563, 5, 23557, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237274, 2474, 4563, 5, 23562, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237275, 2474, 4563, 5, 23565, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237276, 2474, 4563, 5, 23568, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237277, 2474, 4563, 5, 23570, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237278, 2474, 4563, 5, 23571, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237279, 2474, 4563, 5, 23573, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237280, 2474, 4563, 5, 23579, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237281, 2474, 4563, 5, 23581, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237282, 2474, 4563, 5, 23596, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237283, 2474, 4563, 5, 23599, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237284, 2474, 4563, 5, 23606, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237285, 2474, 4563, 5, 23607, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237286, 2474, 4563, 5, 23616, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237287, 2474, 4563, 5, 23619, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237288, 2474, 4563, 5, 23623, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237289, 2475, 4563, 5, 22755, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237290, 2475, 4563, 5, 22773, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237291, 2475, 4563, 5, 22776, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237292, 2475, 4563, 5, 22777, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237293, 2475, 4563, 5, 22787, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237294, 2475, 4563, 5, 22788, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237295, 2475, 4563, 5, 22789, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237296, 2475, 4563, 5, 22790, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237297, 2475, 4563, 5, 22791, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237298, 2475, 4563, 5, 22792, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237299, 2475, 4563, 5, 22793, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237300, 2475, 4563, 5, 22794, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237301, 2475, 4563, 5, 22795, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237302, 2475, 4563, 5, 22796, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237303, 2475, 4563, 5, 22797, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237304, 2475, 4563, 5, 22807, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237305, 2475, 4563, 5, 22817, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237306, 2475, 4563, 5, 22824, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237307, 2475, 4563, 5, 22831, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237308, 2475, 4563, 5, 22832, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237309, 2475, 4563, 5, 22833, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237310, 2475, 4563, 5, 22834, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237311, 2475, 4563, 5, 22835, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237312, 2475, 4563, 5, 22836, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237313, 2475, 4563, 5, 22856, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237314, 2475, 4563, 5, 22858, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237315, 2475, 4563, 5, 22859, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237316, 2475, 4563, 5, 22870, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237317, 2475, 4563, 5, 22876, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237318, 2475, 4563, 5, 22877, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237319, 2475, 4563, 5, 22878, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237320, 2475, 4563, 5, 22879, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237321, 2475, 4563, 5, 22880, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237322, 2475, 4563, 5, 22888, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237323, 2475, 4563, 5, 22889, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237324, 2475, 4563, 5, 22890, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237325, 2475, 4563, 5, 22900, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237326, 2475, 4563, 5, 22915, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237327, 2475, 4563, 5, 22926, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237328, 2475, 4563, 5, 22927, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237329, 2475, 4563, 5, 22928, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237330, 2475, 4563, 5, 22934, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237331, 2475, 4563, 5, 22935, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237332, 2475, 4563, 5, 22954, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237333, 2475, 4563, 5, 22955, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237334, 2475, 4563, 5, 22958, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237335, 2475, 4563, 5, 22959, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237336, 2475, 4563, 5, 22960, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237337, 2475, 4563, 5, 22979, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237338, 2475, 4563, 5, 22988, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237339, 2475, 4563, 5, 23002, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237340, 2475, 4563, 5, 23003, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237341, 2475, 4563, 5, 23048, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237342, 2475, 4563, 5, 23049, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237343, 2475, 4563, 5, 23050, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237344, 2475, 4563, 5, 23051, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237345, 2475, 4563, 5, 23052, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237346, 2475, 4563, 5, 23053, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237347, 2475, 4563, 5, 23061, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237348, 2475, 4563, 5, 23062, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237349, 2475, 4563, 5, 23063, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237350, 2475, 4563, 5, 23070, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237351, 2475, 4563, 5, 23071, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237352, 2475, 4563, 5, 23073, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237353, 2475, 4563, 5, 23081, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237354, 2475, 4563, 5, 23083, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237355, 2475, 4563, 5, 23084, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237356, 2475, 4563, 5, 23085, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237357, 2475, 4563, 5, 23086, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237358, 2475, 4563, 5, 23093, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237359, 2475, 4563, 5, 23096, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237360, 2475, 4563, 5, 23097, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237361, 2475, 4563, 5, 23102, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237362, 2475, 4563, 5, 23116, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237363, 2475, 4563, 5, 23117, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237364, 2475, 4563, 5, 23119, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237365, 2475, 4563, 5, 23122, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237366, 2475, 4563, 5, 23136, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237367, 2475, 4563, 5, 23140, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237368, 2475, 4563, 5, 23141, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237369, 2475, 4563, 5, 23142, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237370, 2475, 4563, 5, 23143, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237371, 2475, 4563, 5, 23144, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237372, 2475, 4563, 5, 23146, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237373, 2475, 4563, 5, 23157, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237374, 2475, 4563, 5, 23158, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237375, 2475, 4563, 5, 23177, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237376, 2475, 4563, 5, 23178, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237377, 2475, 4563, 5, 23192, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237378, 2475, 4563, 5, 23193, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237379, 2475, 4563, 5, 23194, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237380, 2475, 4563, 5, 23197, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237381, 2475, 4563, 5, 23198, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237382, 2475, 4563, 5, 23199, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237383, 2475, 4563, 5, 23200, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237384, 2475, 4563, 5, 23212, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237385, 2475, 4563, 5, 23213, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237386, 2475, 4563, 5, 23234, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237387, 2475, 4563, 5, 23235, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237388, 2475, 4563, 5, 23236, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237389, 2475, 4563, 5, 23237, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237390, 2475, 4563, 5, 23238, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237391, 2475, 4563, 5, 23305, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237392, 2475, 4563, 5, 23362, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237393, 2475, 4563, 5, 23493, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237394, 2475, 4563, 5, 23513, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237395, 2475, 4563, 5, 23549, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237396, 2475, 4563, 5, 23572, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237397, 2476, 4563, 5, 22758, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237398, 2476, 4563, 5, 22759, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237399, 2476, 4563, 5, 23123, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237400, 2476, 4563, 5, 23124, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237401, 2476, 4563, 5, 23125, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237402, 2476, 4563, 5, 23126, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237403, 2476, 4563, 5, 23127, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237404, 2476, 4563, 5, 23150, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237405, 2476, 4563, 5, 23159, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237406, 2476, 4563, 5, 23160, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237407, 2476, 4563, 5, 23162, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237408, 2476, 4563, 5, 23163, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237409, 2476, 4563, 5, 23216, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237410, 2476, 4563, 5, 23224, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237411, 2476, 4563, 5, 23225, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237412, 2476, 4563, 5, 23226, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237413, 2476, 4563, 5, 23227, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237414, 2476, 4563, 5, 23228, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237415, 2476, 4563, 5, 23229, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237416, 2476, 4563, 5, 23230, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237417, 2476, 4563, 5, 23232, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237418, 2476, 4563, 5, 23233, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237419, 2476, 4563, 5, 23239, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237420, 2476, 4563, 5, 23240, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237421, 2476, 4563, 5, 23241, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237422, 2476, 4563, 5, 23242, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237423, 2476, 4563, 5, 23268, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237424, 2476, 4563, 5, 23277, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237425, 2476, 4563, 5, 23304, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237426, 2476, 4563, 5, 23308, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237427, 2476, 4563, 5, 23309, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237428, 2476, 4563, 5, 23310, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237429, 2476, 4563, 5, 23311, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237430, 2476, 4563, 5, 23312, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237431, 2476, 4563, 5, 23313, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237432, 2476, 4563, 5, 23315, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237433, 2476, 4563, 5, 23316, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237434, 2476, 4563, 5, 23317, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237435, 2476, 4563, 5, 23318, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237436, 2476, 4563, 5, 23319, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237437, 2476, 4563, 5, 23343, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237438, 2476, 4563, 5, 23344, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237439, 2476, 4563, 5, 23345, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237440, 2476, 4563, 5, 23346, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237441, 2476, 4563, 5, 23363, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237442, 2476, 4563, 5, 23367, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237443, 2476, 4563, 5, 23375, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237444, 2476, 4563, 5, 23383, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237445, 2476, 4563, 5, 23384, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237446, 2476, 4563, 5, 23386, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237447, 2476, 4563, 5, 23390, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237448, 2476, 4563, 5, 23398, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237449, 2476, 4563, 5, 23446, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237450, 2476, 4563, 5, 23457, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237451, 2476, 4563, 5, 23458, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237452, 2476, 4563, 5, 23471, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237453, 2476, 4563, 5, 23472, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237454, 2476, 4563, 5, 23473, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237455, 2476, 4563, 5, 23474, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237456, 2476, 4563, 5, 23475, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237457, 2476, 4563, 5, 23492, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237458, 2476, 4563, 5, 23498, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237459, 2476, 4563, 5, 23499, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237460, 2476, 4563, 5, 23501, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237461, 2476, 4563, 5, 23502, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237462, 2476, 4563, 5, 23503, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237463, 2476, 4563, 5, 23514, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237464, 2476, 4563, 5, 23515, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237465, 2476, 4563, 5, 23546, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237466, 2476, 4563, 5, 23563, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237467, 2476, 4563, 5, 23564, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237468, 2476, 4563, 5, 23577, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237469, 2477, 4563, 5, 22763, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237470, 2477, 4563, 5, 22969, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237471, 2477, 4563, 5, 23118, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237472, 2477, 4563, 5, 23149, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237473, 2477, 4563, 5, 23176, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237474, 2478, 4563, 5, 22766, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237475, 2478, 4563, 5, 22780, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237476, 2478, 4563, 5, 22810, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237477, 2478, 4563, 5, 22843, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237478, 2478, 4563, 5, 22868, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237479, 2478, 4563, 5, 22869, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237480, 2478, 4563, 5, 22871, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237481, 2478, 4563, 5, 22872, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237482, 2478, 4563, 5, 22873, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237483, 2478, 4563, 5, 22874, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237484, 2478, 4563, 5, 22951, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237485, 2478, 4563, 5, 22952, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237486, 2478, 4563, 5, 22953, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237487, 2478, 4563, 5, 22956, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237488, 2478, 4563, 5, 22990, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237489, 2478, 4563, 5, 22994, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237490, 2478, 4563, 5, 22995, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237491, 2478, 4563, 5, 23031, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237492, 2478, 4563, 5, 23047, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237493, 2478, 4563, 5, 23056, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237494, 2478, 4563, 5, 23060, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237495, 2478, 4563, 5, 23087, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237496, 2478, 4563, 5, 23088, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237497, 2478, 4563, 5, 23105, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237498, 2478, 4563, 5, 23106, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237499, 2478, 4563, 5, 23107, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237500, 2478, 4563, 5, 23108, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237501, 2478, 4563, 5, 23109, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237502, 2478, 4563, 5, 23138, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237503, 2478, 4563, 5, 23139, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237504, 2478, 4563, 5, 23189, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237505, 2478, 4563, 5, 23347, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237506, 2478, 4563, 5, 23368, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237507, 2478, 4563, 5, 23372, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237508, 2478, 4563, 5, 23373, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237509, 2478, 4563, 5, 23409, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237510, 2478, 4563, 5, 23424, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237511, 2478, 4563, 5, 23439, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237512, 2478, 4563, 5, 23440, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237513, 2478, 4563, 5, 23476, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237514, 2478, 4563, 5, 23561, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237515, 2478, 4563, 5, 23576, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237516, 2478, 4563, 5, 23578, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237517, 2478, 4563, 5, 23590, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237518, 2478, 4563, 5, 23621, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237519, 2479, 4563, 5, 22769, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237520, 2479, 4563, 5, 22772, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237521, 2479, 4563, 5, 22774, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237522, 2480, 4563, 5, 22778, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237523, 2480, 4563, 5, 22844, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237524, 2480, 4563, 5, 22846, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237525, 2480, 4563, 5, 22847, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237526, 2480, 4563, 5, 22920, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237527, 2480, 4563, 5, 22924, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237528, 2480, 4563, 5, 22925, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237529, 2480, 4563, 5, 23074, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237530, 2480, 4563, 5, 23307, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237531, 2480, 4563, 5, 23358, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237532, 2480, 4563, 5, 23540, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237533, 2480, 4563, 5, 23543, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237534, 2480, 4563, 5, 23554, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237535, 2480, 4563, 5, 23558, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237536, 2480, 4563, 5, 23575, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237537, 2480, 4563, 5, 23603, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237538, 2480, 4563, 5, 23608, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237539, 2481, 4563, 5, 22783, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237540, 2481, 4563, 5, 22826, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237541, 2481, 4563, 5, 22983, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237542, 2481, 4563, 5, 22984, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237543, 2481, 4563, 5, 22985, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237544, 2481, 4563, 5, 22986, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237545, 2481, 4563, 5, 23220, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237546, 2481, 4563, 5, 23221, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237547, 2481, 4563, 5, 23366, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237548, 2481, 4563, 5, 23401, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237549, 2482, 4563, 5, 22783, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237550, 2482, 4563, 5, 22826, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237551, 2482, 4563, 5, 22983, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237552, 2482, 4563, 5, 22984, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237553, 2482, 4563, 5, 22985, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237554, 2482, 4563, 5, 22986, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237555, 2482, 4563, 5, 23151, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237556, 2482, 4563, 5, 23152, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237557, 2482, 4563, 5, 23153, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237558, 2482, 4563, 5, 23154, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237559, 2482, 4563, 5, 23220, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237560, 2482, 4563, 5, 23221, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237561, 2482, 4563, 5, 23366, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237562, 2482, 4563, 5, 23401, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237563, 2482, 4563, 5, 23548, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237564, 2483, 4563, 5, 22798, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237565, 2484, 4563, 5, 22844, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237566, 2484, 4563, 5, 23334, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237567, 2484, 4563, 5, 23335, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237568, 2484, 4563, 5, 23338, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237569, 2484, 4563, 5, 23339, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237570, 2484, 4563, 5, 23340, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237571, 2484, 4563, 5, 23349, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237572, 2484, 4563, 5, 23350, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237573, 2484, 4563, 5, 23351, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237574, 2484, 4563, 5, 23353, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237575, 2484, 4563, 5, 23354, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237576, 2484, 4563, 5, 23355, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237577, 2484, 4563, 5, 23356, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237578, 2484, 4563, 5, 23357, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237579, 2484, 4563, 5, 23358, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237580, 2484, 4563, 5, 23359, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237581, 2484, 4563, 5, 23360, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237582, 2484, 4563, 5, 23361, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237583, 2484, 4563, 5, 23365, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237584, 2484, 4563, 5, 23374, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237585, 2484, 4563, 5, 23379, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237586, 2484, 4563, 5, 23380, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237587, 2484, 4563, 5, 23381, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237588, 2484, 4563, 5, 23382, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237589, 2484, 4563, 5, 23385, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237590, 2484, 4563, 5, 23396, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237591, 2484, 4563, 5, 23400, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237592, 2484, 4563, 5, 23402, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237593, 2484, 4563, 5, 23403, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237594, 2484, 4563, 5, 23404, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237595, 2484, 4563, 5, 23425, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237596, 2484, 4563, 5, 23431, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237597, 2484, 4563, 5, 23445, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237598, 2484, 4563, 5, 23453, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237599, 2484, 4563, 5, 23454, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237600, 2484, 4563, 5, 23455, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237601, 2484, 4563, 5, 23460, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237602, 2484, 4563, 5, 23461, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237603, 2484, 4563, 5, 23462, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237604, 2484, 4563, 5, 23463, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237605, 2484, 4563, 5, 23464, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237606, 2484, 4563, 5, 23466, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237607, 2484, 4563, 5, 23467, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237608, 2484, 4563, 5, 23478, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237609, 2484, 4563, 5, 23479, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237610, 2484, 4563, 5, 23486, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237611, 2484, 4563, 5, 23487, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237612, 2484, 4563, 5, 23489, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237613, 2484, 4563, 5, 23491, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237614, 2484, 4563, 5, 23495, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237615, 2484, 4563, 5, 23496, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237616, 2484, 4563, 5, 23512, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237617, 2484, 4563, 5, 23516, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237618, 2484, 4563, 5, 23517, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237619, 2484, 4563, 5, 23518, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237620, 2484, 4563, 5, 23519, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237621, 2484, 4563, 5, 23522, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237622, 2484, 4563, 5, 23523, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237623, 2484, 4563, 5, 23531, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237624, 2484, 4563, 5, 23532, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237625, 2484, 4563, 5, 23533, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237626, 2484, 4563, 5, 23534, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237627, 2484, 4563, 5, 23535, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237628, 2484, 4563, 5, 23536, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237629, 2484, 4563, 5, 23537, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237630, 2484, 4563, 5, 23538, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237631, 2484, 4563, 5, 23539, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237632, 2484, 4563, 5, 23543, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237633, 2484, 4563, 5, 23544, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237634, 2484, 4563, 5, 23557, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237635, 2484, 4563, 5, 23562, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237636, 2484, 4563, 5, 23574, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237637, 2484, 4563, 5, 23575, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237638, 2484, 4563, 5, 23583, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237639, 2484, 4563, 5, 23584, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237640, 2484, 4563, 5, 23585, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237641, 2484, 4563, 5, 23586, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237642, 2484, 4563, 5, 23587, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237643, 2484, 4563, 5, 23588, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237644, 2484, 4563, 5, 23589, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237645, 2484, 4563, 5, 23591, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237646, 2484, 4563, 5, 23598, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237647, 2484, 4563, 5, 23602, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237648, 2484, 4563, 5, 23603, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237649, 2484, 4563, 5, 23604, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237650, 2484, 4563, 5, 23606, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237651, 2484, 4563, 5, 23607, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237652, 2485, 4563, 5, 22996, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237653, 2485, 4563, 5, 22997, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237654, 2485, 4563, 5, 22998, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237655, 2485, 4563, 5, 23314, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237656, 2485, 4563, 5, 23364, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237657, 2485, 4563, 5, 23521, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237658, 2485, 4563, 5, 23566, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237659, 2485, 4563, 5, 23567, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237660, 2485, 4563, 5, 23580, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237661, 2485, 4563, 5, 23582, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237662, 2485, 4563, 5, 23595, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237663, 2485, 4563, 5, 23615, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237664, 2486, 4563, 5, 23155, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237665, 2486, 4563, 5, 23223, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237666, 2486, 4563, 5, 23330, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237667, 2486, 4563, 5, 23332, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237668, 2486, 4563, 5, 23520, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237669, 2486, 4563, 5, 23524, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237670, 2486, 4563, 5, 23525, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237671, 2486, 4563, 5, 23526, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237672, 2487, 4564, 5, 22790, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237673, 2487, 4564, 5, 22795, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237674, 2487, 4564, 5, 22803, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237675, 2487, 4564, 5, 22808, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237676, 2487, 4564, 5, 22819, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237677, 2487, 4564, 5, 22828, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237678, 2487, 4564, 5, 22832, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237679, 2487, 4564, 5, 22837, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237680, 2487, 4564, 5, 22850, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237681, 2487, 4564, 5, 22854, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237682, 2487, 4564, 5, 22862, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237683, 2487, 4564, 5, 22873, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237684, 2487, 4564, 5, 22883, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237685, 2487, 4564, 5, 22911, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237686, 2487, 4564, 5, 22927, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237687, 2487, 4564, 5, 22929, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237688, 2487, 4564, 5, 22938, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237689, 2487, 4564, 5, 22939, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237690, 2487, 4564, 5, 22942, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237691, 2487, 4564, 5, 22955, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237692, 2487, 4564, 5, 22964, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237693, 2487, 4564, 5, 22973, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237694, 2487, 4564, 5, 22984, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237695, 2487, 4564, 5, 23012, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237696, 2487, 4564, 5, 23017, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237697, 2487, 4564, 5, 23027, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237698, 2487, 4564, 5, 23035, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237699, 2487, 4564, 5, 23041, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237700, 2487, 4564, 5, 23051, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237701, 2487, 4564, 5, 23068, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237702, 2487, 4564, 5, 23079, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237703, 2487, 4564, 5, 23083, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237704, 2487, 4564, 5, 23100, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237705, 2487, 4564, 5, 23107, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237706, 2487, 4564, 5, 23126, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237707, 2487, 4564, 5, 23134, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237708, 2487, 4564, 5, 23143, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237709, 2487, 4564, 5, 23151, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237710, 2487, 4564, 5, 23162, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237711, 2487, 4564, 5, 23186, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237712, 2487, 4564, 5, 23193, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237713, 2487, 4564, 5, 23199, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237714, 2487, 4564, 5, 23205, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237715, 2487, 4564, 5, 23210, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237716, 2487, 4564, 5, 23228, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237717, 2487, 4564, 5, 23235, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237718, 2487, 4564, 5, 23239, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237719, 2487, 4564, 5, 23246, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237720, 2487, 4564, 5, 23252, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237721, 2487, 4564, 5, 23256, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237722, 2487, 4564, 5, 23258, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237723, 2487, 4564, 5, 23266, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237724, 2487, 4564, 5, 23281, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237725, 2487, 4564, 5, 23282, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237726, 2487, 4564, 5, 23291, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237727, 2487, 4564, 5, 23293, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237728, 2487, 4564, 5, 23296, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237729, 2487, 4564, 5, 23311, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237730, 2487, 4564, 5, 23318, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237731, 2487, 4564, 5, 23325, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237732, 2487, 4564, 5, 23336, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237733, 2487, 4564, 5, 23338, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237734, 2487, 4564, 5, 23351, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237735, 2487, 4564, 5, 23354, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237736, 2487, 4564, 5, 23359, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237737, 2487, 4564, 5, 23392, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237738, 2487, 4564, 5, 23412, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237739, 2487, 4564, 5, 23433, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237740, 2487, 4564, 5, 23461, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237741, 2487, 4564, 5, 23474, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237742, 2487, 4564, 5, 23501, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237743, 2487, 4564, 5, 23507, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237744, 2487, 4564, 5, 23511, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237745, 2487, 4564, 5, 23518, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237746, 2487, 4564, 5, 23537, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237747, 2487, 4564, 5, 23552, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237748, 2487, 4564, 5, 23598, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237749, 2488, 4564, 5, 22929, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237750, 2488, 4564, 5, 23027, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237751, 2488, 4564, 5, 23041, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237752, 2488, 4564, 5, 23336, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237753, 2488, 4564, 5, 23338, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237754, 2488, 4564, 5, 23351, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237755, 2488, 4564, 5, 23511, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237756, 2488, 4564, 5, 23552, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237757, 2488, 4564, 5, 23598, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237758, 2489, 4564, 5, 22929, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237759, 2489, 4564, 5, 23027, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237760, 2489, 4564, 5, 23041, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237761, 2489, 4564, 5, 23051, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237762, 2489, 4564, 5, 23336, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237763, 2489, 4564, 5, 23351, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237764, 2489, 4564, 5, 23511, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237765, 2489, 4564, 5, 23552, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237766, 2489, 4564, 5, 23598, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237767, 2490, 4564, 5, 23027, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237768, 2490, 4564, 5, 23041, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237769, 2490, 4564, 5, 23336, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237770, 2490, 4564, 5, 23338, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237771, 2490, 4564, 5, 23351, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237772, 2490, 4564, 5, 23511, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237773, 2490, 4564, 5, 23552, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237774, 2490, 4564, 5, 23598, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237775, 2491, 4564, 5, 23027, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237776, 2491, 4564, 5, 23041, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237777, 2491, 4564, 5, 23134, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237778, 2491, 4564, 5, 23162, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237779, 2491, 4564, 5, 23511, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237780, 2491, 4564, 5, 23552, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237781, 2491, 4564, 5, 23598, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237782, 2492, 4564, 5, 23027, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237783, 2492, 4564, 5, 23041, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237784, 2492, 4564, 5, 23511, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237785, 2492, 4564, 5, 23552, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237786, 2492, 4564, 5, 23598, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237787, 2493, 4564, 5, 23027, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237788, 2493, 4564, 5, 23041, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237789, 2493, 4564, 5, 23511, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237790, 2493, 4564, 5, 23552, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237791, 2493, 4564, 5, 23598, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237792, 2494, 4564, 5, 23041, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237793, 2494, 4564, 5, 23511, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237794, 2494, 4564, 5, 23552, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237795, 2494, 4564, 5, 23598, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237796, 2495, 4564, 5, 23511, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237797, 2495, 4564, 5, 23552, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237798, 2495, 4564, 5, 23598, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237800, 3112, 4565, 2, 22746, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237801, 3112, 4565, 2, 22747, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237802, 3113, 4565, 2, 22748, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237803, 3113, 4565, 2, 22881, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237804, 3113, 4565, 2, 22882, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237805, 3113, 4565, 2, 22883, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237806, 3113, 4565, 2, 22884, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237807, 3113, 4565, 2, 22895, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237808, 3113, 4565, 2, 22896, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237809, 3113, 4565, 2, 22897, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237810, 3113, 4565, 2, 23009, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237811, 3113, 4565, 2, 23273, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237812, 3113, 4565, 2, 23376, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237813, 3114, 4565, 2, 22749, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237814, 3114, 4565, 2, 22750, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237815, 3115, 4565, 2, 22751, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237816, 3115, 4565, 2, 22784, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237817, 3115, 4565, 2, 22786, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237818, 3115, 4565, 2, 22918, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237819, 3116, 4565, 2, 22752, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237820, 3117, 4565, 2, 22753, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237821, 3118, 4565, 2, 22755, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237822, 3119, 4565, 2, 22756, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237823, 3120, 4565, 2, 22757, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237824, 3120, 4565, 2, 22818, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237825, 3121, 4565, 2, 22758, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237826, 3121, 4565, 2, 22759, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237827, 3122, 4565, 2, 22760, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237828, 3123, 4565, 2, 22761, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237829, 3123, 4565, 2, 22762, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237830, 3123, 4565, 2, 22921, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237831, 3123, 4565, 2, 22970, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237832, 3124, 4565, 2, 22763, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237833, 3124, 4565, 2, 22765, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237834, 3125, 4565, 2, 22764, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237835, 3126, 4565, 2, 22767, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237836, 3126, 4565, 2, 22781, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237837, 3126, 4565, 2, 22782, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237838, 3126, 4565, 2, 22971, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237839, 3127, 4565, 2, 22768, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237840, 3127, 4565, 2, 22770, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237841, 3127, 4565, 2, 22771, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237842, 3128, 4565, 2, 22769, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237843, 3128, 4565, 2, 22772, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237844, 3129, 4565, 2, 22773, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237845, 3130, 4565, 2, 22775, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237846, 3130, 4565, 2, 22823, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237847, 3131, 4565, 2, 22776, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237848, 3132, 4565, 2, 22777, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237849, 3133, 4565, 2, 22778, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237850, 3134, 4565, 2, 22779, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237851, 3135, 4565, 2, 22783, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237852, 3135, 4565, 2, 22826, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237853, 3136, 4565, 2, 22785, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237854, 3136, 4565, 2, 22799, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237855, 3136, 4565, 2, 22800, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237856, 3136, 4565, 2, 23094, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237857, 3137, 4565, 2, 22787, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237858, 3138, 4565, 2, 22788, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237859, 3138, 4565, 2, 22789, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237860, 3138, 4565, 2, 22790, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237861, 3138, 4565, 2, 22791, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237862, 3138, 4565, 2, 22792, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237863, 3138, 4565, 2, 22793, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237864, 3139, 4565, 2, 22794, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237865, 3139, 4565, 2, 22795, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237866, 3139, 4565, 2, 22796, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237867, 3139, 4565, 2, 22797, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237868, 3140, 4565, 2, 22798, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237869, 3141, 4565, 2, 22801, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237870, 3141, 4565, 2, 22802, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237871, 3141, 4565, 2, 22803, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237872, 3142, 4565, 2, 22804, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237873, 3142, 4565, 2, 22989, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237874, 3143, 4565, 2, 22805, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237875, 3144, 4565, 2, 22807, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237876, 3145, 4565, 2, 22808, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237877, 3145, 4565, 2, 22809, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237878, 3146, 4565, 2, 22811, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237879, 3146, 4565, 2, 22812, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237880, 3147, 4565, 2, 22813, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237881, 3148, 4565, 2, 22814, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237882, 3149, 4565, 2, 22815, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237883, 3149, 4565, 2, 22816, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237884, 3150, 4565, 2, 22817, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237885, 3151, 4565, 2, 22819, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237886, 3151, 4565, 2, 22820, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237887, 3152, 4565, 2, 22819, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237888, 3152, 4565, 2, 22820, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237889, 3153, 4565, 2, 22824, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237890, 3154, 4565, 2, 22825, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237891, 3155, 4565, 2, 22830, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237892, 3156, 4565, 2, 22831, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237893, 3156, 4565, 2, 22832, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237894, 3156, 4565, 2, 22833, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237895, 3156, 4565, 2, 22834, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237896, 3156, 4565, 2, 22835, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237897, 3156, 4565, 2, 22836, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237898, 3157, 4565, 2, 22837, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237899, 3157, 4565, 2, 22838, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237900, 3157, 4565, 2, 22839, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237901, 3157, 4565, 2, 22840, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237902, 3158, 4565, 2, 22842, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237903, 3159, 4565, 2, 22843, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237904, 3160, 4565, 2, 22844, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237905, 3161, 4565, 2, 22846, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237906, 3162, 4565, 2, 22847, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237907, 3163, 4565, 2, 22848, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237908, 3163, 4565, 2, 22849, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237909, 3163, 4565, 2, 22850, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237910, 3163, 4565, 2, 22851, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237911, 3164, 4565, 2, 22852, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237912, 3164, 4565, 2, 22853, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237913, 3164, 4565, 2, 22854, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237914, 3165, 4565, 2, 22855, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237915, 3166, 4565, 2, 22856, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237916, 3167, 4565, 2, 22857, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237917, 3168, 4565, 2, 22858, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237918, 3168, 4565, 2, 22859, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237919, 3169, 4565, 2, 22860, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237920, 3169, 4565, 2, 22886, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237921, 3170, 4565, 2, 22861, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237922, 3170, 4565, 2, 22862, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237923, 3170, 4565, 2, 22863, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237924, 3170, 4565, 2, 22864, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237925, 3171, 4565, 2, 22866, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237926, 3172, 4565, 2, 22867, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237927, 3173, 4565, 2, 22868, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237928, 3174, 4565, 2, 22870, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237929, 3175, 4565, 2, 22875, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237930, 3176, 4565, 2, 22876, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237931, 3177, 4565, 2, 22877, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237932, 3177, 4565, 2, 22878, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237933, 3177, 4565, 2, 22879, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237934, 3178, 4565, 2, 22880, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237935, 3179, 4565, 2, 22885, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237936, 3180, 4565, 2, 22887, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237937, 3180, 4565, 2, 22891, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237938, 3180, 4565, 2, 22893, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237939, 3180, 4565, 2, 22894, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237940, 3180, 4565, 2, 22901, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237941, 3180, 4565, 2, 22916, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237942, 3180, 4565, 2, 22917, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237943, 3180, 4565, 2, 22924, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237944, 3180, 4565, 2, 22925, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237945, 3181, 4565, 2, 22888, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237946, 3181, 4565, 2, 22889, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237947, 3181, 4565, 2, 22900, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237948, 3182, 4565, 2, 22892, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237949, 3183, 4565, 2, 22898, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237950, 3184, 4565, 2, 22899, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237951, 3185, 4565, 2, 22902, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237952, 3186, 4565, 2, 22903, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237953, 3186, 4565, 2, 22904, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237954, 3187, 4565, 2, 22907, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237955, 3188, 4565, 2, 22908, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237956, 3189, 4565, 2, 22908, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237957, 3190, 4565, 2, 22909, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237958, 3191, 4565, 2, 22910, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237959, 3191, 4565, 2, 22911, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237960, 3191, 4565, 2, 22912, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237961, 3191, 4565, 2, 23156, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237962, 3192, 4565, 2, 22913, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237963, 3192, 4565, 2, 22914, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237964, 3193, 4565, 2, 22915, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237965, 3193, 4565, 2, 23146, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237966, 3194, 4565, 2, 22919, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237967, 3195, 4565, 2, 22920, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237968, 3196, 4565, 2, 22923, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237969, 3197, 4565, 2, 22926, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237970, 3197, 4565, 2, 22927, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237971, 3197, 4565, 2, 22928, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237972, 3197, 4565, 2, 23014, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237973, 3197, 4565, 2, 23096, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237974, 3198, 4565, 2, 22934, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237975, 3198, 4565, 2, 22935, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237976, 3199, 4565, 2, 22954, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237977, 3199, 4565, 2, 22955, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237978, 3199, 4565, 2, 22958, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237979, 3199, 4565, 2, 22959, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237980, 3199, 4565, 2, 22960, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237981, 3200, 4565, 2, 22957, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237982, 3201, 4565, 2, 22969, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237983, 3202, 4565, 2, 22972, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237984, 3202, 4565, 2, 22973, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237985, 3202, 4565, 2, 22974, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237986, 3202, 4565, 2, 22975, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237987, 3202, 4565, 2, 22976, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237988, 3203, 4565, 2, 22977, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237989, 3204, 4565, 2, 22978, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237990, 3204, 4565, 2, 23033, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237991, 3204, 4565, 2, 23034, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237992, 3204, 4565, 2, 23035, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237993, 3204, 4565, 2, 23036, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237994, 3205, 4565, 2, 22979, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237995, 3206, 4565, 2, 22980, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237996, 3207, 4565, 2, 22981, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237997, 3208, 4565, 2, 22983, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237998, 3208, 4565, 2, 22984, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (237999, 3208, 4565, 2, 22985, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238000, 3208, 4565, 2, 22986, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238001, 3209, 4565, 2, 22988, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238002, 3210, 4565, 2, 22991, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238003, 3210, 4565, 2, 23058, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238004, 3210, 4565, 2, 23274, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238005, 3211, 4565, 2, 22993, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238006, 3211, 4565, 2, 23272, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238007, 3212, 4565, 2, 22996, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238008, 3212, 4565, 2, 22997, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238009, 3212, 4565, 2, 22998, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238010, 3213, 4565, 2, 22999, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238011, 3213, 4565, 2, 23000, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238012, 3213, 4565, 2, 23001, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238013, 3213, 4565, 2, 23095, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238014, 3214, 4565, 2, 23002, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238015, 3214, 4565, 2, 23003, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238016, 3215, 4565, 2, 23004, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238017, 3215, 4565, 2, 23005, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238018, 3215, 4565, 2, 23006, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238019, 3216, 4565, 2, 23010, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238020, 3216, 4565, 2, 23011, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238021, 3216, 4565, 2, 23012, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238022, 3216, 4565, 2, 23013, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238023, 3217, 4565, 2, 23016, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238024, 3217, 4565, 2, 23017, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238025, 3217, 4565, 2, 23018, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238026, 3217, 4565, 2, 23019, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238027, 3217, 4565, 2, 23020, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238028, 3217, 4565, 2, 23021, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238029, 3217, 4565, 2, 23103, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238030, 3217, 4565, 2, 23219, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238031, 3218, 4565, 2, 23032, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238032, 3219, 4565, 2, 23037, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238033, 3219, 4565, 2, 23038, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238034, 3219, 4565, 2, 23039, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238035, 3219, 4565, 2, 23040, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238036, 3219, 4565, 2, 23041, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238037, 3219, 4565, 2, 23042, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238038, 3219, 4565, 2, 23043, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238039, 3219, 4565, 2, 23044, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238040, 3219, 4565, 2, 23045, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238041, 3219, 4565, 2, 23046, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238042, 3219, 4565, 2, 23112, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238043, 3220, 4565, 2, 23048, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238044, 3220, 4565, 2, 23049, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238045, 3220, 4565, 2, 23050, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238046, 3220, 4565, 2, 23051, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238047, 3220, 4565, 2, 23052, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238048, 3220, 4565, 2, 23053, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238049, 3220, 4565, 2, 23119, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238050, 3221, 4565, 2, 23057, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238051, 3222, 4565, 2, 23059, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238052, 3223, 4565, 2, 23061, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238053, 3224, 4565, 2, 23062, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238054, 3225, 4565, 2, 23064, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238055, 3226, 4565, 2, 23066, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238056, 3227, 4565, 2, 23070, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238057, 3228, 4565, 2, 23071, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238058, 3229, 4565, 2, 23073, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238059, 3230, 4565, 2, 23074, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238060, 3231, 4565, 2, 23075, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238061, 3232, 4565, 2, 23077, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238062, 3232, 4565, 2, 23078, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238063, 3232, 4565, 2, 23079, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238064, 3232, 4565, 2, 23080, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238065, 3233, 4565, 2, 23081, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238066, 3233, 4565, 2, 23082, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238067, 3233, 4565, 2, 23083, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238068, 3233, 4565, 2, 23084, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238069, 3233, 4565, 2, 23122, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238070, 3233, 4565, 2, 23305, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238071, 3234, 4565, 2, 23085, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238072, 3234, 4565, 2, 23086, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238073, 3235, 4565, 2, 23089, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238074, 3236, 4565, 2, 23090, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238075, 3237, 4565, 2, 23093, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238076, 3237, 4565, 2, 23102, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238077, 3238, 4565, 2, 23097, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238078, 3239, 4565, 2, 23098, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238079, 3239, 4565, 2, 23099, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238080, 3239, 4565, 2, 23100, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238081, 3239, 4565, 2, 23101, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238082, 3239, 4565, 2, 23120, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238083, 3239, 4565, 2, 23167, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238084, 3240, 4565, 2, 23110, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238085, 3241, 4565, 2, 23111, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238086, 3241, 4565, 2, 23113, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238087, 3242, 4565, 2, 23114, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238088, 3242, 4565, 2, 23115, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238089, 3243, 4565, 2, 23116, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238090, 3244, 4565, 2, 23117, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238091, 3245, 4565, 2, 23118, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238092, 3246, 4565, 2, 23121, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238093, 3246, 4565, 2, 23169, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238094, 3246, 4565, 2, 23170, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238095, 3247, 4565, 2, 23123, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238096, 3247, 4565, 2, 23124, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238097, 3247, 4565, 2, 23125, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238098, 3247, 4565, 2, 23126, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238099, 3247, 4565, 2, 23127, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238100, 3247, 4565, 2, 23371, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238101, 3248, 4565, 2, 23128, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238102, 3248, 4565, 2, 23129, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238103, 3249, 4565, 2, 23130, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238104, 3249, 4565, 2, 23131, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238105, 3249, 4565, 2, 23370, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238106, 3250, 4565, 2, 23132, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238107, 3250, 4565, 2, 23133, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238108, 3250, 4565, 2, 23134, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238109, 3250, 4565, 2, 23135, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238110, 3251, 4565, 2, 23136, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238111, 3252, 4565, 2, 23137, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238112, 3253, 4565, 2, 23140, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238113, 3254, 4565, 2, 23141, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238114, 3254, 4565, 2, 23143, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238115, 3254, 4565, 2, 23144, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238116, 3255, 4565, 2, 23142, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238117, 3256, 4565, 2, 23145, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238118, 3257, 4565, 2, 23147, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238119, 3258, 4565, 2, 23149, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238120, 3259, 4565, 2, 23166, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238121, 3260, 4565, 2, 23171, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238122, 3261, 4565, 2, 23175, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238123, 3262, 4565, 2, 23177, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238124, 3262, 4565, 2, 23178, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238125, 3263, 4565, 2, 23179, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238126, 3263, 4565, 2, 23188, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238127, 3264, 4565, 2, 23190, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238128, 3265, 4565, 2, 23191, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238129, 3266, 4565, 2, 23192, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238130, 3266, 4565, 2, 23193, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238131, 3266, 4565, 2, 23194, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238132, 3266, 4565, 2, 23549, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238133, 3267, 4565, 2, 23197, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238134, 3267, 4565, 2, 23198, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238135, 3267, 4565, 2, 23199, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238136, 3267, 4565, 2, 23200, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238137, 3268, 4565, 2, 23207, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238138, 3268, 4565, 2, 23208, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238139, 3268, 4565, 2, 23209, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238140, 3268, 4565, 2, 23210, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238141, 3268, 4565, 2, 23211, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238142, 3269, 4565, 2, 23212, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238143, 3270, 4565, 2, 23218, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238144, 3271, 4565, 2, 23220, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238145, 3271, 4565, 2, 23221, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238146, 3272, 4565, 2, 23222, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238147, 3272, 4565, 2, 23223, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238148, 3273, 4565, 2, 23235, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238149, 3273, 4565, 2, 23236, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238150, 3273, 4565, 2, 23237, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238151, 3273, 4565, 2, 23238, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238152, 3274, 4565, 2, 23243, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238153, 3275, 4565, 2, 23244, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238155, 3276, 4565, 2, 23246, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238156, 3276, 4565, 2, 23247, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238157, 3276, 4565, 2, 23248, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238158, 3276, 4565, 2, 23249, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238159, 3276, 4565, 2, 23250, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238160, 3276, 4565, 2, 23251, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238161, 3276, 4565, 2, 23252, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238162, 3276, 4565, 2, 23253, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238163, 3276, 4565, 2, 23254, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238164, 3276, 4565, 2, 23255, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238165, 3276, 4565, 2, 23256, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238166, 3276, 4565, 2, 23257, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238167, 3276, 4565, 2, 23258, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238168, 3276, 4565, 2, 23259, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238169, 3276, 4565, 2, 23261, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238170, 3276, 4565, 2, 23262, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238171, 3276, 4565, 2, 23456, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238172, 3277, 4565, 2, 23263, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238173, 3277, 4565, 2, 23269, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238174, 3278, 4565, 2, 23264, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238175, 3278, 4565, 2, 23265, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238176, 3278, 4565, 2, 23266, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238177, 3278, 4565, 2, 23267, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238178, 3279, 4565, 2, 23270, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238179, 3280, 4565, 2, 23271, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238180, 3281, 4565, 2, 23275, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238181, 3282, 4565, 2, 23276, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238182, 3283, 4565, 2, 23277, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238183, 3284, 4565, 2, 23278, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238184, 3284, 4565, 2, 23282, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238185, 3284, 4565, 2, 23284, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238186, 3285, 4565, 2, 23279, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238187, 3285, 4565, 2, 23280, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238188, 3285, 4565, 2, 23281, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238189, 3285, 4565, 2, 23283, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238190, 3286, 4565, 2, 23285, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238191, 3286, 4565, 2, 23286, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238192, 3286, 4565, 2, 23287, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238193, 3287, 4565, 2, 23288, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238194, 3287, 4565, 2, 23290, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238195, 3287, 4565, 2, 23291, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238196, 3287, 4565, 2, 23294, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238197, 3288, 4565, 2, 23296, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238198, 3288, 4565, 2, 23297, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238199, 3288, 4565, 2, 23298, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238200, 3288, 4565, 2, 23299, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238201, 3288, 4565, 2, 23300, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238202, 3289, 4565, 2, 23301, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238203, 3290, 4565, 2, 23303, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238204, 3291, 4565, 2, 23304, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238205, 3292, 4565, 2, 23306, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238206, 3293, 4565, 2, 23320, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238207, 3293, 4565, 2, 23323, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238208, 3293, 4565, 2, 23325, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238209, 3293, 4565, 2, 23418, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238210, 3293, 4565, 2, 23452, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238211, 3294, 4565, 2, 23321, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238212, 3294, 4565, 2, 23322, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238213, 3294, 4565, 2, 23326, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238214, 3295, 4565, 2, 23324, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238215, 3296, 4565, 2, 23328, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238216, 3296, 4565, 2, 23329, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238217, 3297, 4565, 2, 23330, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238218, 3297, 4565, 2, 23332, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238219, 3297, 4565, 2, 23333, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238220, 3297, 4565, 2, 23505, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238221, 3298, 4565, 2, 23331, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238222, 3299, 4565, 2, 23342, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238223, 3300, 4565, 2, 23343, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238224, 3300, 4565, 2, 23383, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238225, 3300, 4565, 2, 23384, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238226, 3300, 4565, 2, 23386, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238227, 3301, 4565, 2, 23348, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238228, 3302, 4565, 2, 23350, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238229, 3302, 4565, 2, 23351, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238230, 3302, 4565, 2, 23352, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238231, 3302, 4565, 2, 23353, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238232, 3302, 4565, 2, 23357, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238233, 3303, 4565, 2, 23362, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238234, 3304, 4565, 2, 23364, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238235, 3305, 4565, 2, 23366, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238236, 3306, 4565, 2, 23369, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238237, 3307, 4565, 2, 23374, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238238, 3307, 4565, 2, 23379, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238239, 3308, 4565, 2, 23375, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238240, 3309, 4565, 2, 23377, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238241, 3309, 4565, 2, 23378, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238242, 3310, 4565, 2, 23377, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238243, 3310, 4565, 2, 23378, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238244, 3311, 4565, 2, 23389, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238245, 3312, 4565, 2, 23390, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238246, 3313, 4565, 2, 23396, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238247, 3314, 4565, 2, 23397, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238248, 3315, 4565, 2, 23399, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238249, 3316, 4565, 2, 23400, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238250, 3317, 4565, 2, 23401, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238251, 3318, 4565, 2, 23402, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238252, 3318, 4565, 2, 23403, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238253, 3318, 4565, 2, 23404, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238254, 3319, 4565, 2, 23410, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238255, 3319, 4565, 2, 23411, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238256, 3319, 4565, 2, 23412, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238257, 3319, 4565, 2, 23413, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238258, 3319, 4565, 2, 23414, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238259, 3320, 4565, 2, 23417, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238260, 3321, 4565, 2, 23423, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238261, 3322, 4565, 2, 23426, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238262, 3323, 4565, 2, 23427, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238263, 3324, 4565, 2, 23428, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238264, 3324, 4565, 2, 23429, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238265, 3325, 4565, 2, 23430, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238266, 3326, 4565, 2, 23432, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238267, 3326, 4565, 2, 23433, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238268, 3326, 4565, 2, 23434, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238269, 3326, 4565, 2, 23435, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238270, 3327, 4565, 2, 23436, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238271, 3328, 4565, 2, 23437, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238272, 3329, 4565, 2, 23438, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238273, 3330, 4565, 2, 23444, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238274, 3331, 4565, 2, 23445, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238275, 3332, 4565, 2, 23446, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238276, 3333, 4565, 2, 23447, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238277, 3334, 4565, 2, 23448, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238278, 3335, 4565, 2, 23449, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238279, 3336, 4565, 2, 23450, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238280, 3337, 4565, 2, 23451, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238281, 3338, 4565, 2, 23457, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238282, 3339, 4565, 2, 23458, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238283, 3340, 4565, 2, 23459, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238284, 3341, 4565, 2, 23465, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238285, 3342, 4565, 2, 23468, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238286, 3342, 4565, 2, 23469, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238287, 3343, 4565, 2, 23470, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238288, 3344, 4565, 2, 23471, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238289, 3344, 4565, 2, 23472, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238290, 3344, 4565, 2, 23473, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238291, 3344, 4565, 2, 23474, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238292, 3344, 4565, 2, 23475, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238293, 3345, 4565, 2, 23477, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238294, 3346, 4565, 2, 23480, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238295, 3347, 4565, 2, 23481, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238296, 3347, 4565, 2, 23482, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238297, 3347, 4565, 2, 23491, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238298, 3348, 4565, 2, 23483, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238299, 3348, 4565, 2, 23484, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238300, 3349, 4565, 2, 23488, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238301, 3350, 4565, 2, 23490, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238302, 3351, 4565, 2, 23490, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238303, 3352, 4565, 2, 23490, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238304, 3353, 4565, 2, 23492, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238305, 3354, 4565, 2, 23492, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238306, 3355, 4565, 2, 23493, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238307, 3356, 4565, 2, 23494, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238308, 3357, 4565, 2, 23497, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238309, 3358, 4565, 2, 23498, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238310, 3358, 4565, 2, 23499, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238311, 3358, 4565, 2, 23501, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238312, 3358, 4565, 2, 23502, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238313, 3358, 4565, 2, 23503, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238314, 3359, 4565, 2, 23500, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238315, 3360, 4565, 2, 23504, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238316, 3361, 4565, 2, 23506, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238317, 3361, 4565, 2, 23507, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238318, 3361, 4565, 2, 23508, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238319, 3361, 4565, 2, 23509, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238320, 3361, 4565, 2, 23569, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238321, 3362, 4565, 2, 23510, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238322, 3362, 4565, 2, 23511, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238323, 3362, 4565, 2, 23512, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238324, 3363, 4565, 2, 23513, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238325, 3364, 4565, 2, 23514, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238326, 3364, 4565, 2, 23515, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238327, 3365, 4565, 2, 23521, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238328, 3365, 4565, 2, 23522, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238329, 3365, 4565, 2, 23523, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238330, 3365, 4565, 2, 23525, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238331, 3365, 4565, 2, 23526, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238332, 3365, 4565, 2, 23559, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238333, 3366, 4565, 2, 23529, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238334, 3366, 4565, 2, 23560, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238335, 3367, 4565, 2, 23533, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238336, 3367, 4565, 2, 23534, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238337, 3367, 4565, 2, 23535, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238338, 3367, 4565, 2, 23536, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238339, 3367, 4565, 2, 23537, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238340, 3367, 4565, 2, 23538, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238341, 3368, 4565, 2, 23539, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238342, 3369, 4565, 2, 23540, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238343, 3370, 4565, 2, 23541, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238344, 3371, 4565, 2, 23542, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238345, 3372, 4565, 2, 23543, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238346, 3373, 4565, 2, 23544, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238347, 3374, 4565, 2, 23545, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238348, 3375, 4565, 2, 23546, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238349, 3376, 4565, 2, 23547, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238350, 3377, 4565, 2, 23550, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238351, 3378, 4565, 2, 23551, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238352, 3378, 4565, 2, 23552, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238353, 3379, 4565, 2, 23554, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238354, 3380, 4565, 2, 23555, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238355, 3381, 4565, 2, 23557, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238356, 3382, 4565, 2, 23558, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238357, 3383, 4565, 2, 23562, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238358, 3384, 4565, 2, 23564, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238359, 3385, 4565, 2, 23565, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238360, 3386, 4565, 2, 23566, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238361, 3386, 4565, 2, 23567, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238362, 3387, 4565, 2, 23568, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238363, 3388, 4565, 2, 23570, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238364, 3388, 4565, 2, 23571, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238365, 3389, 4565, 2, 23572, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238366, 3390, 4565, 2, 23573, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238367, 3391, 4565, 2, 23574, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238368, 3392, 4565, 2, 23575, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238369, 3393, 4565, 2, 23577, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238370, 3394, 4565, 2, 23579, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238371, 3395, 4565, 2, 23580, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238372, 3396, 4565, 2, 23581, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238373, 3397, 4565, 2, 23582, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238374, 3398, 4565, 2, 23583, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238375, 3399, 4565, 2, 23584, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238376, 3400, 4565, 2, 23585, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238377, 3400, 4565, 2, 23586, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238378, 3401, 4565, 2, 23587, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238379, 3402, 4565, 2, 23588, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238380, 3403, 4565, 2, 23589, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238381, 3403, 4565, 2, 23597, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238382, 3403, 4565, 2, 23598, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238383, 3404, 4565, 2, 23592, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238384, 3405, 4565, 2, 23594, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238385, 3406, 4565, 2, 23595, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238386, 3407, 4565, 2, 23596, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238387, 3407, 4565, 2, 23599, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238388, 3407, 4565, 2, 23606, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238389, 3407, 4565, 2, 23609, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238390, 3408, 4565, 2, 23600, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238391, 3409, 4565, 2, 23601, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238392, 3410, 4565, 2, 23602, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238393, 3411, 4565, 2, 23603, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238394, 3412, 4565, 2, 23604, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238395, 3413, 4565, 2, 23605, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238396, 3414, 4565, 2, 23607, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238397, 3415, 4565, 2, 23608, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238398, 3416, 4565, 2, 23610, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238399, 3417, 4565, 2, 23611, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238400, 3418, 4565, 2, 23612, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238401, 3419, 4565, 2, 23615, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238402, 3420, 4565, 2, 23616, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238403, 3421, 4565, 2, 23619, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238404, 3421, 4565, 2, 23623, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238405, 3422, 4565, 2, 23621, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238406, 3423, 4565, 2, 23622, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238407, 2496, 4566, 5, 22746, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238408, 2496, 4566, 5, 22747, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238409, 2496, 4566, 5, 22748, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238410, 2496, 4566, 5, 22749, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238411, 2496, 4566, 5, 22750, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238412, 2496, 4566, 5, 22751, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238413, 2496, 4566, 5, 22752, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238414, 2496, 4566, 5, 22753, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238415, 2496, 4566, 5, 22754, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238416, 2496, 4566, 5, 22756, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238417, 2496, 4566, 5, 22757, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238418, 2496, 4566, 5, 22758, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238419, 2496, 4566, 5, 22759, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238420, 2496, 4566, 5, 22760, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238421, 2496, 4566, 5, 22761, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238422, 2496, 4566, 5, 22762, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238423, 2496, 4566, 5, 22763, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238424, 2496, 4566, 5, 22764, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238425, 2496, 4566, 5, 22765, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238426, 2496, 4566, 5, 22766, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238427, 2496, 4566, 5, 22767, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238428, 2496, 4566, 5, 22768, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238429, 2496, 4566, 5, 22769, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238430, 2496, 4566, 5, 22770, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238431, 2496, 4566, 5, 22771, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238432, 2496, 4566, 5, 22772, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238433, 2496, 4566, 5, 22773, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238434, 2496, 4566, 5, 22774, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238435, 2496, 4566, 5, 22775, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238436, 2496, 4566, 5, 22776, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238437, 2496, 4566, 5, 22777, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238438, 2496, 4566, 5, 22778, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238439, 2496, 4566, 5, 22779, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238440, 2496, 4566, 5, 22780, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238441, 2496, 4566, 5, 22781, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238442, 2496, 4566, 5, 22782, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238443, 2496, 4566, 5, 22783, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238444, 2496, 4566, 5, 22784, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238445, 2496, 4566, 5, 22785, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238446, 2496, 4566, 5, 22786, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238447, 2496, 4566, 5, 22787, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238448, 2496, 4566, 5, 22788, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238449, 2496, 4566, 5, 22789, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238450, 2496, 4566, 5, 22790, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238451, 2496, 4566, 5, 22791, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238452, 2496, 4566, 5, 22792, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238453, 2496, 4566, 5, 22793, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238454, 2496, 4566, 5, 22794, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238455, 2496, 4566, 5, 22795, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238456, 2496, 4566, 5, 22796, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238457, 2496, 4566, 5, 22797, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238458, 2496, 4566, 5, 22798, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238459, 2496, 4566, 5, 22799, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238460, 2496, 4566, 5, 22800, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238461, 2496, 4566, 5, 22801, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238462, 2496, 4566, 5, 22802, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238463, 2496, 4566, 5, 22803, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238464, 2496, 4566, 5, 22804, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238465, 2496, 4566, 5, 22805, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238466, 2496, 4566, 5, 22806, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238467, 2496, 4566, 5, 22807, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238468, 2496, 4566, 5, 22808, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238469, 2496, 4566, 5, 22809, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238470, 2496, 4566, 5, 22810, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238471, 2496, 4566, 5, 22811, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238472, 2496, 4566, 5, 22812, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238473, 2496, 4566, 5, 22813, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238474, 2496, 4566, 5, 22814, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238475, 2496, 4566, 5, 22815, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238476, 2496, 4566, 5, 22816, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238477, 2496, 4566, 5, 22817, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238478, 2496, 4566, 5, 22818, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238479, 2496, 4566, 5, 22819, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238480, 2496, 4566, 5, 22820, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238481, 2496, 4566, 5, 22821, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238482, 2496, 4566, 5, 22822, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238483, 2496, 4566, 5, 22823, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238484, 2496, 4566, 5, 22824, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238485, 2496, 4566, 5, 22825, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238486, 2496, 4566, 5, 22826, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238487, 2496, 4566, 5, 22827, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238488, 2496, 4566, 5, 22828, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238489, 2496, 4566, 5, 22829, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238490, 2496, 4566, 5, 22830, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238491, 2496, 4566, 5, 22831, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238492, 2496, 4566, 5, 22832, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238493, 2496, 4566, 5, 22833, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238494, 2496, 4566, 5, 22834, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238495, 2496, 4566, 5, 22835, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238496, 2496, 4566, 5, 22836, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238497, 2496, 4566, 5, 22837, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238498, 2496, 4566, 5, 22838, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238499, 2496, 4566, 5, 22839, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238500, 2496, 4566, 5, 22840, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238501, 2496, 4566, 5, 22841, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238502, 2496, 4566, 5, 22842, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238503, 2496, 4566, 5, 22843, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238504, 2496, 4566, 5, 22844, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238505, 2496, 4566, 5, 22845, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238506, 2496, 4566, 5, 22846, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238507, 2496, 4566, 5, 22847, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238508, 2496, 4566, 5, 22848, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238509, 2496, 4566, 5, 22849, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238510, 2496, 4566, 5, 22850, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238511, 2496, 4566, 5, 22851, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238512, 2496, 4566, 5, 22852, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238513, 2496, 4566, 5, 22853, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238514, 2496, 4566, 5, 22854, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238515, 2496, 4566, 5, 22855, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238516, 2496, 4566, 5, 22856, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238517, 2496, 4566, 5, 22857, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238518, 2496, 4566, 5, 22858, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238519, 2496, 4566, 5, 22859, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238520, 2496, 4566, 5, 22860, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238521, 2496, 4566, 5, 22861, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238522, 2496, 4566, 5, 22862, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238523, 2496, 4566, 5, 22863, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238524, 2496, 4566, 5, 22864, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238525, 2496, 4566, 5, 22865, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238526, 2496, 4566, 5, 22866, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238527, 2496, 4566, 5, 22867, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238528, 2496, 4566, 5, 22868, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238529, 2496, 4566, 5, 22869, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238530, 2496, 4566, 5, 22870, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238531, 2496, 4566, 5, 22871, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238532, 2496, 4566, 5, 22872, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238533, 2496, 4566, 5, 22873, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238534, 2496, 4566, 5, 22874, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238535, 2496, 4566, 5, 22875, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238536, 2496, 4566, 5, 22876, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238537, 2496, 4566, 5, 22877, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238538, 2496, 4566, 5, 22878, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238539, 2496, 4566, 5, 22879, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238540, 2496, 4566, 5, 22880, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238541, 2496, 4566, 5, 22881, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238542, 2496, 4566, 5, 22882, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238543, 2496, 4566, 5, 22883, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238544, 2496, 4566, 5, 22884, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238545, 2496, 4566, 5, 22885, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238546, 2496, 4566, 5, 22886, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238547, 2496, 4566, 5, 22887, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238548, 2496, 4566, 5, 22888, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238549, 2496, 4566, 5, 22889, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238550, 2496, 4566, 5, 22890, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238551, 2496, 4566, 5, 22891, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238552, 2496, 4566, 5, 22892, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238553, 2496, 4566, 5, 22893, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238554, 2496, 4566, 5, 22894, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238555, 2496, 4566, 5, 22895, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238556, 2496, 4566, 5, 22896, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238557, 2496, 4566, 5, 22897, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238558, 2496, 4566, 5, 22898, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238559, 2496, 4566, 5, 22899, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238560, 2496, 4566, 5, 22900, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238561, 2496, 4566, 5, 22901, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238562, 2496, 4566, 5, 22902, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238563, 2496, 4566, 5, 22903, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238564, 2496, 4566, 5, 22904, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238565, 2496, 4566, 5, 22905, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238566, 2496, 4566, 5, 22906, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238567, 2496, 4566, 5, 22907, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238568, 2496, 4566, 5, 22908, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238569, 2496, 4566, 5, 22909, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238570, 2496, 4566, 5, 22910, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238571, 2496, 4566, 5, 22911, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238572, 2496, 4566, 5, 22912, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238573, 2496, 4566, 5, 22913, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238574, 2496, 4566, 5, 22914, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238575, 2496, 4566, 5, 22915, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238576, 2496, 4566, 5, 22916, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238577, 2496, 4566, 5, 22917, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238578, 2496, 4566, 5, 22918, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238579, 2496, 4566, 5, 22919, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238580, 2496, 4566, 5, 22920, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238581, 2496, 4566, 5, 22921, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238582, 2496, 4566, 5, 22922, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238583, 2496, 4566, 5, 22923, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238584, 2496, 4566, 5, 22924, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238585, 2496, 4566, 5, 22925, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238586, 2496, 4566, 5, 22926, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238587, 2496, 4566, 5, 22927, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238588, 2496, 4566, 5, 22928, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238589, 2496, 4566, 5, 22929, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238590, 2496, 4566, 5, 22930, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238591, 2496, 4566, 5, 22931, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238592, 2496, 4566, 5, 22932, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238593, 2496, 4566, 5, 22933, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238594, 2496, 4566, 5, 22934, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238595, 2496, 4566, 5, 22935, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238596, 2496, 4566, 5, 22936, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238597, 2496, 4566, 5, 22937, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238598, 2496, 4566, 5, 22938, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238599, 2496, 4566, 5, 22939, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238600, 2496, 4566, 5, 22940, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238601, 2496, 4566, 5, 22941, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238602, 2496, 4566, 5, 22942, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238603, 2496, 4566, 5, 22943, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238604, 2496, 4566, 5, 22944, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238605, 2496, 4566, 5, 22945, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238606, 2496, 4566, 5, 22946, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238607, 2496, 4566, 5, 22947, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238608, 2496, 4566, 5, 22948, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238609, 2496, 4566, 5, 22949, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238610, 2496, 4566, 5, 22950, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238611, 2496, 4566, 5, 22951, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238612, 2496, 4566, 5, 22952, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238613, 2496, 4566, 5, 22953, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238614, 2496, 4566, 5, 22954, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238615, 2496, 4566, 5, 22955, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238616, 2496, 4566, 5, 22956, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238617, 2496, 4566, 5, 22957, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238618, 2496, 4566, 5, 22958, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238619, 2496, 4566, 5, 22959, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238620, 2496, 4566, 5, 22960, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238621, 2496, 4566, 5, 22961, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238622, 2496, 4566, 5, 22962, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238623, 2496, 4566, 5, 22963, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238624, 2496, 4566, 5, 22964, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238625, 2496, 4566, 5, 22965, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238626, 2496, 4566, 5, 22966, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238627, 2496, 4566, 5, 22967, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238628, 2496, 4566, 5, 22968, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238629, 2496, 4566, 5, 22969, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238630, 2496, 4566, 5, 22970, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238631, 2496, 4566, 5, 22971, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238632, 2496, 4566, 5, 22972, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238633, 2496, 4566, 5, 22973, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238634, 2496, 4566, 5, 22974, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238635, 2496, 4566, 5, 22975, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238636, 2496, 4566, 5, 22976, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238637, 2496, 4566, 5, 22977, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238638, 2496, 4566, 5, 22978, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238639, 2496, 4566, 5, 22979, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238640, 2496, 4566, 5, 22980, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238641, 2496, 4566, 5, 22981, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238642, 2496, 4566, 5, 22982, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238643, 2496, 4566, 5, 22983, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238644, 2496, 4566, 5, 22984, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238645, 2496, 4566, 5, 22985, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238646, 2496, 4566, 5, 22986, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238647, 2496, 4566, 5, 22987, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238648, 2496, 4566, 5, 22988, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238649, 2496, 4566, 5, 22989, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238650, 2496, 4566, 5, 22990, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238651, 2496, 4566, 5, 22991, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238652, 2496, 4566, 5, 22992, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238653, 2496, 4566, 5, 22993, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238654, 2496, 4566, 5, 22994, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238655, 2496, 4566, 5, 22995, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238656, 2496, 4566, 5, 22996, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238657, 2496, 4566, 5, 22997, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238658, 2496, 4566, 5, 22998, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238659, 2496, 4566, 5, 22999, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238660, 2496, 4566, 5, 23000, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238661, 2496, 4566, 5, 23001, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238662, 2496, 4566, 5, 23002, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238663, 2496, 4566, 5, 23003, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238664, 2496, 4566, 5, 23004, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238665, 2496, 4566, 5, 23005, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238666, 2496, 4566, 5, 23006, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238667, 2496, 4566, 5, 23007, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238668, 2496, 4566, 5, 23008, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238669, 2496, 4566, 5, 23009, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238670, 2496, 4566, 5, 23010, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238671, 2496, 4566, 5, 23011, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238672, 2496, 4566, 5, 23012, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238673, 2496, 4566, 5, 23013, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238674, 2496, 4566, 5, 23014, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238675, 2496, 4566, 5, 23015, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238676, 2496, 4566, 5, 23016, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238677, 2496, 4566, 5, 23017, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238678, 2496, 4566, 5, 23018, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238679, 2496, 4566, 5, 23019, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238680, 2496, 4566, 5, 23020, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238681, 2496, 4566, 5, 23021, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238682, 2496, 4566, 5, 23022, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238683, 2496, 4566, 5, 23023, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238684, 2496, 4566, 5, 23024, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238685, 2496, 4566, 5, 23025, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238686, 2496, 4566, 5, 23026, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238687, 2496, 4566, 5, 23027, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238688, 2496, 4566, 5, 23028, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238689, 2496, 4566, 5, 23029, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238690, 2496, 4566, 5, 23030, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238691, 2496, 4566, 5, 23031, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238692, 2496, 4566, 5, 23032, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238693, 2496, 4566, 5, 23033, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238694, 2496, 4566, 5, 23034, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238695, 2496, 4566, 5, 23035, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238696, 2496, 4566, 5, 23036, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238697, 2496, 4566, 5, 23037, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238698, 2496, 4566, 5, 23038, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238699, 2496, 4566, 5, 23039, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238700, 2496, 4566, 5, 23040, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238701, 2496, 4566, 5, 23041, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238702, 2496, 4566, 5, 23042, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238703, 2496, 4566, 5, 23043, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238704, 2496, 4566, 5, 23044, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238705, 2496, 4566, 5, 23045, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238706, 2496, 4566, 5, 23046, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238707, 2496, 4566, 5, 23047, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238708, 2496, 4566, 5, 23048, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238709, 2496, 4566, 5, 23049, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238710, 2496, 4566, 5, 23050, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238711, 2496, 4566, 5, 23051, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238712, 2496, 4566, 5, 23052, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238713, 2496, 4566, 5, 23053, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238714, 2496, 4566, 5, 23054, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238715, 2496, 4566, 5, 23055, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238716, 2496, 4566, 5, 23056, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238717, 2496, 4566, 5, 23057, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238718, 2496, 4566, 5, 23058, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238719, 2496, 4566, 5, 23059, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238720, 2496, 4566, 5, 23060, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238721, 2496, 4566, 5, 23061, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238722, 2496, 4566, 5, 23062, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238723, 2496, 4566, 5, 23063, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238724, 2496, 4566, 5, 23064, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238725, 2496, 4566, 5, 23065, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238726, 2496, 4566, 5, 23066, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238727, 2496, 4566, 5, 23067, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238728, 2496, 4566, 5, 23068, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238729, 2496, 4566, 5, 23069, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238730, 2496, 4566, 5, 23070, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238731, 2496, 4566, 5, 23071, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238732, 2496, 4566, 5, 23072, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238733, 2496, 4566, 5, 23073, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238734, 2496, 4566, 5, 23074, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238735, 2496, 4566, 5, 23075, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238736, 2496, 4566, 5, 23076, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238737, 2496, 4566, 5, 23077, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238738, 2496, 4566, 5, 23078, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238739, 2496, 4566, 5, 23079, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238740, 2496, 4566, 5, 23080, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238741, 2496, 4566, 5, 23081, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238742, 2496, 4566, 5, 23082, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238743, 2496, 4566, 5, 23083, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238744, 2496, 4566, 5, 23084, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238745, 2496, 4566, 5, 23085, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238746, 2496, 4566, 5, 23086, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238747, 2496, 4566, 5, 23087, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238748, 2496, 4566, 5, 23088, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238749, 2496, 4566, 5, 23089, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238750, 2496, 4566, 5, 23090, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238751, 2496, 4566, 5, 23091, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238752, 2496, 4566, 5, 23092, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238753, 2496, 4566, 5, 23093, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238754, 2496, 4566, 5, 23094, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238755, 2496, 4566, 5, 23095, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238756, 2496, 4566, 5, 23096, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238757, 2496, 4566, 5, 23097, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238758, 2496, 4566, 5, 23098, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238759, 2496, 4566, 5, 23099, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238760, 2496, 4566, 5, 23100, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238761, 2496, 4566, 5, 23101, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238762, 2496, 4566, 5, 23102, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238763, 2496, 4566, 5, 23103, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238764, 2496, 4566, 5, 23104, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238765, 2496, 4566, 5, 23105, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238766, 2496, 4566, 5, 23106, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238767, 2496, 4566, 5, 23107, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238768, 2496, 4566, 5, 23108, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238769, 2496, 4566, 5, 23109, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238770, 2496, 4566, 5, 23110, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238771, 2496, 4566, 5, 23111, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238772, 2496, 4566, 5, 23112, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238773, 2496, 4566, 5, 23113, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238774, 2496, 4566, 5, 23114, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238775, 2496, 4566, 5, 23115, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238776, 2496, 4566, 5, 23116, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238777, 2496, 4566, 5, 23117, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238778, 2496, 4566, 5, 23118, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238779, 2496, 4566, 5, 23119, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238780, 2496, 4566, 5, 23120, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238781, 2496, 4566, 5, 23121, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238782, 2496, 4566, 5, 23122, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238783, 2496, 4566, 5, 23123, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238784, 2496, 4566, 5, 23124, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238785, 2496, 4566, 5, 23125, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238786, 2496, 4566, 5, 23126, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238787, 2496, 4566, 5, 23127, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238788, 2496, 4566, 5, 23128, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238789, 2496, 4566, 5, 23129, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238790, 2496, 4566, 5, 23130, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238791, 2496, 4566, 5, 23131, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238792, 2496, 4566, 5, 23132, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238793, 2496, 4566, 5, 23133, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238794, 2496, 4566, 5, 23134, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238795, 2496, 4566, 5, 23135, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238796, 2496, 4566, 5, 23136, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238797, 2496, 4566, 5, 23137, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238798, 2496, 4566, 5, 23138, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238799, 2496, 4566, 5, 23139, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238800, 2496, 4566, 5, 23140, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238801, 2496, 4566, 5, 23141, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238802, 2496, 4566, 5, 23142, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238803, 2496, 4566, 5, 23143, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238804, 2496, 4566, 5, 23144, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238805, 2496, 4566, 5, 23145, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238806, 2496, 4566, 5, 23146, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238807, 2496, 4566, 5, 23147, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238808, 2496, 4566, 5, 23148, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238809, 2496, 4566, 5, 23149, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238810, 2496, 4566, 5, 23150, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238811, 2496, 4566, 5, 23151, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238812, 2496, 4566, 5, 23152, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238813, 2496, 4566, 5, 23153, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238814, 2496, 4566, 5, 23154, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238815, 2496, 4566, 5, 23155, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238816, 2496, 4566, 5, 23156, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238817, 2496, 4566, 5, 23157, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238818, 2496, 4566, 5, 23158, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238819, 2496, 4566, 5, 23159, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238820, 2496, 4566, 5, 23160, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238821, 2496, 4566, 5, 23161, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238822, 2496, 4566, 5, 23162, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238823, 2496, 4566, 5, 23163, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238824, 2496, 4566, 5, 23164, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238825, 2496, 4566, 5, 23165, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238826, 2496, 4566, 5, 23166, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238827, 2496, 4566, 5, 23167, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238828, 2496, 4566, 5, 23168, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238829, 2496, 4566, 5, 23169, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238830, 2496, 4566, 5, 23170, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238831, 2496, 4566, 5, 23171, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238832, 2496, 4566, 5, 23172, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238833, 2496, 4566, 5, 23173, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238834, 2496, 4566, 5, 23174, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238835, 2496, 4566, 5, 23175, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238836, 2496, 4566, 5, 23176, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238837, 2496, 4566, 5, 23177, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238838, 2496, 4566, 5, 23178, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238839, 2496, 4566, 5, 23179, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238840, 2496, 4566, 5, 23180, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238841, 2496, 4566, 5, 23181, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238842, 2496, 4566, 5, 23182, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238843, 2496, 4566, 5, 23183, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238844, 2496, 4566, 5, 23184, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238845, 2496, 4566, 5, 23185, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238846, 2496, 4566, 5, 23186, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238847, 2496, 4566, 5, 23187, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238848, 2496, 4566, 5, 23188, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238849, 2496, 4566, 5, 23189, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238850, 2496, 4566, 5, 23190, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238851, 2496, 4566, 5, 23191, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238852, 2496, 4566, 5, 23192, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238853, 2496, 4566, 5, 23193, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238854, 2496, 4566, 5, 23194, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238855, 2496, 4566, 5, 23195, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238856, 2496, 4566, 5, 23196, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238857, 2496, 4566, 5, 23197, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238858, 2496, 4566, 5, 23198, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238859, 2496, 4566, 5, 23199, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238860, 2496, 4566, 5, 23200, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238861, 2496, 4566, 5, 23201, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238862, 2496, 4566, 5, 23202, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238863, 2496, 4566, 5, 23203, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238864, 2496, 4566, 5, 23204, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238865, 2496, 4566, 5, 23205, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238866, 2496, 4566, 5, 23206, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238867, 2496, 4566, 5, 23207, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238868, 2496, 4566, 5, 23208, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238869, 2496, 4566, 5, 23209, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238870, 2496, 4566, 5, 23210, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238871, 2496, 4566, 5, 23211, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238872, 2496, 4566, 5, 23212, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238873, 2496, 4566, 5, 23213, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238874, 2496, 4566, 5, 23214, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238875, 2496, 4566, 5, 23215, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238876, 2496, 4566, 5, 23216, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238877, 2496, 4566, 5, 23217, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238878, 2496, 4566, 5, 23218, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238879, 2496, 4566, 5, 23219, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238880, 2496, 4566, 5, 23220, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238881, 2496, 4566, 5, 23221, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238882, 2496, 4566, 5, 23222, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238883, 2496, 4566, 5, 23223, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238884, 2496, 4566, 5, 23224, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238885, 2496, 4566, 5, 23225, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238886, 2496, 4566, 5, 23226, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238887, 2496, 4566, 5, 23227, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238888, 2496, 4566, 5, 23228, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238889, 2496, 4566, 5, 23229, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238890, 2496, 4566, 5, 23230, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238891, 2496, 4566, 5, 23231, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238892, 2496, 4566, 5, 23232, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238893, 2496, 4566, 5, 23233, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238894, 2496, 4566, 5, 23234, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238895, 2496, 4566, 5, 23235, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238896, 2496, 4566, 5, 23236, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238897, 2496, 4566, 5, 23237, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238898, 2496, 4566, 5, 23238, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238899, 2496, 4566, 5, 23239, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238900, 2496, 4566, 5, 23240, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238901, 2496, 4566, 5, 23241, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238902, 2496, 4566, 5, 23242, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238903, 2496, 4566, 5, 23243, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238904, 2496, 4566, 5, 23244, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238905, 2496, 4566, 5, 23245, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238906, 2496, 4566, 5, 23246, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238907, 2496, 4566, 5, 23247, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238908, 2496, 4566, 5, 23248, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238909, 2496, 4566, 5, 23249, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238910, 2496, 4566, 5, 23250, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238911, 2496, 4566, 5, 23251, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238912, 2496, 4566, 5, 23252, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238913, 2496, 4566, 5, 23253, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238914, 2496, 4566, 5, 23254, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238915, 2496, 4566, 5, 23255, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238916, 2496, 4566, 5, 23256, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238917, 2496, 4566, 5, 23257, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238918, 2496, 4566, 5, 23258, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238919, 2496, 4566, 5, 23259, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238920, 2496, 4566, 5, 23260, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238921, 2496, 4566, 5, 23261, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238922, 2496, 4566, 5, 23262, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238923, 2496, 4566, 5, 23263, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238924, 2496, 4566, 5, 23264, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238925, 2496, 4566, 5, 23265, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238926, 2496, 4566, 5, 23266, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238927, 2496, 4566, 5, 23267, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238928, 2496, 4566, 5, 23268, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238929, 2496, 4566, 5, 23269, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238930, 2496, 4566, 5, 23270, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238931, 2496, 4566, 5, 23271, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238932, 2496, 4566, 5, 23272, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238933, 2496, 4566, 5, 23273, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238934, 2496, 4566, 5, 23274, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238935, 2496, 4566, 5, 23275, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238936, 2496, 4566, 5, 23276, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238937, 2496, 4566, 5, 23277, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238938, 2496, 4566, 5, 23278, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238939, 2496, 4566, 5, 23279, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238940, 2496, 4566, 5, 23280, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238941, 2496, 4566, 5, 23281, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238942, 2496, 4566, 5, 23282, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238943, 2496, 4566, 5, 23283, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238944, 2496, 4566, 5, 23284, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238945, 2496, 4566, 5, 23285, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238946, 2496, 4566, 5, 23286, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238947, 2496, 4566, 5, 23287, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238948, 2496, 4566, 5, 23288, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238949, 2496, 4566, 5, 23289, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238950, 2496, 4566, 5, 23290, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238951, 2496, 4566, 5, 23291, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238952, 2496, 4566, 5, 23292, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238953, 2496, 4566, 5, 23293, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238954, 2496, 4566, 5, 23294, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238955, 2496, 4566, 5, 23295, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238956, 2496, 4566, 5, 23296, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238957, 2496, 4566, 5, 23297, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238958, 2496, 4566, 5, 23298, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238959, 2496, 4566, 5, 23299, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238960, 2496, 4566, 5, 23300, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238961, 2496, 4566, 5, 23301, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238962, 2496, 4566, 5, 23302, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238963, 2496, 4566, 5, 23303, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238964, 2496, 4566, 5, 23304, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238965, 2496, 4566, 5, 23305, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238966, 2496, 4566, 5, 23306, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238967, 2496, 4566, 5, 23307, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238968, 2496, 4566, 5, 23308, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238969, 2496, 4566, 5, 23309, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238970, 2496, 4566, 5, 23310, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238971, 2496, 4566, 5, 23311, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238972, 2496, 4566, 5, 23312, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238973, 2496, 4566, 5, 23313, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238974, 2496, 4566, 5, 23314, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238975, 2496, 4566, 5, 23315, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238976, 2496, 4566, 5, 23316, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238977, 2496, 4566, 5, 23317, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238978, 2496, 4566, 5, 23318, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238979, 2496, 4566, 5, 23319, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238980, 2496, 4566, 5, 23320, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238981, 2496, 4566, 5, 23321, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238982, 2496, 4566, 5, 23322, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238983, 2496, 4566, 5, 23323, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238984, 2496, 4566, 5, 23324, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238985, 2496, 4566, 5, 23325, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238986, 2496, 4566, 5, 23326, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238987, 2496, 4566, 5, 23327, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238988, 2496, 4566, 5, 23328, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238989, 2496, 4566, 5, 23329, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238990, 2496, 4566, 5, 23330, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238991, 2496, 4566, 5, 23331, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238992, 2496, 4566, 5, 23332, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238993, 2496, 4566, 5, 23333, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238994, 2496, 4566, 5, 23334, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238995, 2496, 4566, 5, 23335, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238996, 2496, 4566, 5, 23336, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238997, 2496, 4566, 5, 23337, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238998, 2496, 4566, 5, 23338, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (238999, 2496, 4566, 5, 23339, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239000, 2496, 4566, 5, 23340, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239001, 2496, 4566, 5, 23341, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239002, 2496, 4566, 5, 23342, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239003, 2496, 4566, 5, 23343, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239004, 2496, 4566, 5, 23344, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239005, 2496, 4566, 5, 23345, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239006, 2496, 4566, 5, 23346, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239007, 2496, 4566, 5, 23347, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239008, 2496, 4566, 5, 23348, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239009, 2496, 4566, 5, 23349, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239010, 2496, 4566, 5, 23350, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239011, 2496, 4566, 5, 23351, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239012, 2496, 4566, 5, 23352, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239013, 2496, 4566, 5, 23353, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239014, 2496, 4566, 5, 23354, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239015, 2496, 4566, 5, 23355, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239016, 2496, 4566, 5, 23356, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239017, 2496, 4566, 5, 23357, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239018, 2496, 4566, 5, 23358, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239019, 2496, 4566, 5, 23359, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239020, 2496, 4566, 5, 23360, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239021, 2496, 4566, 5, 23361, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239022, 2496, 4566, 5, 23362, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239023, 2496, 4566, 5, 23363, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239024, 2496, 4566, 5, 23364, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239025, 2496, 4566, 5, 23365, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239026, 2496, 4566, 5, 23366, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239027, 2496, 4566, 5, 23367, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239028, 2496, 4566, 5, 23368, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239029, 2496, 4566, 5, 23369, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239030, 2496, 4566, 5, 23370, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239031, 2496, 4566, 5, 23371, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239032, 2496, 4566, 5, 23372, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239033, 2496, 4566, 5, 23373, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239034, 2496, 4566, 5, 23374, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239035, 2496, 4566, 5, 23375, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239036, 2496, 4566, 5, 23376, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239037, 2496, 4566, 5, 23377, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239038, 2496, 4566, 5, 23378, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239039, 2496, 4566, 5, 23379, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239040, 2496, 4566, 5, 23380, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239041, 2496, 4566, 5, 23381, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239042, 2496, 4566, 5, 23382, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239043, 2496, 4566, 5, 23383, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239044, 2496, 4566, 5, 23384, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239045, 2496, 4566, 5, 23385, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239046, 2496, 4566, 5, 23386, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239047, 2496, 4566, 5, 23387, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239048, 2496, 4566, 5, 23388, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239049, 2496, 4566, 5, 23389, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239050, 2496, 4566, 5, 23390, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239051, 2496, 4566, 5, 23391, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239052, 2496, 4566, 5, 23392, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239053, 2496, 4566, 5, 23393, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239054, 2496, 4566, 5, 23394, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239055, 2496, 4566, 5, 23395, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239056, 2496, 4566, 5, 23396, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239057, 2496, 4566, 5, 23397, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239058, 2496, 4566, 5, 23398, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239059, 2496, 4566, 5, 23399, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239060, 2496, 4566, 5, 23400, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239061, 2496, 4566, 5, 23401, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239062, 2496, 4566, 5, 23402, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239063, 2496, 4566, 5, 23403, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239064, 2496, 4566, 5, 23404, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239065, 2496, 4566, 5, 23405, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239066, 2496, 4566, 5, 23406, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239067, 2496, 4566, 5, 23407, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239068, 2496, 4566, 5, 23408, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239069, 2496, 4566, 5, 23409, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239070, 2496, 4566, 5, 23410, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239071, 2496, 4566, 5, 23411, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239072, 2496, 4566, 5, 23412, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239073, 2496, 4566, 5, 23413, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239074, 2496, 4566, 5, 23414, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239075, 2496, 4566, 5, 23415, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239076, 2496, 4566, 5, 23416, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239077, 2496, 4566, 5, 23417, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239078, 2496, 4566, 5, 23418, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239079, 2496, 4566, 5, 23419, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239080, 2496, 4566, 5, 23420, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239081, 2496, 4566, 5, 23421, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239082, 2496, 4566, 5, 23422, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239083, 2496, 4566, 5, 23423, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239084, 2496, 4566, 5, 23424, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239085, 2496, 4566, 5, 23425, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239086, 2496, 4566, 5, 23426, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239087, 2496, 4566, 5, 23427, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239088, 2496, 4566, 5, 23428, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239089, 2496, 4566, 5, 23429, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239090, 2496, 4566, 5, 23430, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239091, 2496, 4566, 5, 23431, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239092, 2496, 4566, 5, 23432, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239093, 2496, 4566, 5, 23433, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239094, 2496, 4566, 5, 23434, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239095, 2496, 4566, 5, 23435, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239096, 2496, 4566, 5, 23436, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239097, 2496, 4566, 5, 23437, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239098, 2496, 4566, 5, 23438, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239099, 2496, 4566, 5, 23439, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239100, 2496, 4566, 5, 23440, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239101, 2496, 4566, 5, 23441, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239102, 2496, 4566, 5, 23442, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239103, 2496, 4566, 5, 23443, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239104, 2496, 4566, 5, 23444, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239105, 2496, 4566, 5, 23445, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239106, 2496, 4566, 5, 23446, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239107, 2496, 4566, 5, 23447, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239108, 2496, 4566, 5, 23448, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239109, 2496, 4566, 5, 23449, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239110, 2496, 4566, 5, 23450, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239111, 2496, 4566, 5, 23451, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239112, 2496, 4566, 5, 23452, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239113, 2496, 4566, 5, 23453, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239114, 2496, 4566, 5, 23454, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239115, 2496, 4566, 5, 23455, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239116, 2496, 4566, 5, 23456, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239117, 2496, 4566, 5, 23457, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239118, 2496, 4566, 5, 23458, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239119, 2496, 4566, 5, 23459, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239120, 2496, 4566, 5, 23460, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239121, 2496, 4566, 5, 23461, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239122, 2496, 4566, 5, 23462, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239123, 2496, 4566, 5, 23463, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239124, 2496, 4566, 5, 23464, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239125, 2496, 4566, 5, 23465, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239126, 2496, 4566, 5, 23466, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239127, 2496, 4566, 5, 23467, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239128, 2496, 4566, 5, 23468, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239129, 2496, 4566, 5, 23469, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239130, 2496, 4566, 5, 23470, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239131, 2496, 4566, 5, 23471, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239132, 2496, 4566, 5, 23472, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239133, 2496, 4566, 5, 23473, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239134, 2496, 4566, 5, 23474, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239135, 2496, 4566, 5, 23475, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239136, 2496, 4566, 5, 23476, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239137, 2496, 4566, 5, 23477, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239138, 2496, 4566, 5, 23478, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239139, 2496, 4566, 5, 23479, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239140, 2496, 4566, 5, 23480, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239141, 2496, 4566, 5, 23481, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239142, 2496, 4566, 5, 23482, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239143, 2496, 4566, 5, 23483, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239144, 2496, 4566, 5, 23484, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239145, 2496, 4566, 5, 23485, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239146, 2496, 4566, 5, 23486, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239147, 2496, 4566, 5, 23487, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239148, 2496, 4566, 5, 23488, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239149, 2496, 4566, 5, 23489, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239150, 2496, 4566, 5, 23490, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239151, 2496, 4566, 5, 23491, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239152, 2496, 4566, 5, 23492, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239153, 2496, 4566, 5, 23493, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239154, 2496, 4566, 5, 23494, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239155, 2496, 4566, 5, 23495, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239156, 2496, 4566, 5, 23496, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239157, 2496, 4566, 5, 23497, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239158, 2496, 4566, 5, 23498, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239159, 2496, 4566, 5, 23499, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239160, 2496, 4566, 5, 23500, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239161, 2496, 4566, 5, 23501, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239162, 2496, 4566, 5, 23502, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239163, 2496, 4566, 5, 23503, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239164, 2496, 4566, 5, 23504, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239165, 2496, 4566, 5, 23505, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239166, 2496, 4566, 5, 23506, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239167, 2496, 4566, 5, 23507, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239168, 2496, 4566, 5, 23508, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239169, 2496, 4566, 5, 23509, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239170, 2496, 4566, 5, 23510, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239171, 2496, 4566, 5, 23511, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239172, 2496, 4566, 5, 23512, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239173, 2496, 4566, 5, 23513, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239174, 2496, 4566, 5, 23514, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239175, 2496, 4566, 5, 23515, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239176, 2496, 4566, 5, 23516, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239177, 2496, 4566, 5, 23517, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239178, 2496, 4566, 5, 23518, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239179, 2496, 4566, 5, 23519, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239180, 2496, 4566, 5, 23520, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239181, 2496, 4566, 5, 23521, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239182, 2496, 4566, 5, 23522, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239183, 2496, 4566, 5, 23523, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239184, 2496, 4566, 5, 23524, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239185, 2496, 4566, 5, 23525, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239186, 2496, 4566, 5, 23526, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239187, 2496, 4566, 5, 23527, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239188, 2496, 4566, 5, 23528, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239189, 2496, 4566, 5, 23529, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239190, 2496, 4566, 5, 23530, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239191, 2496, 4566, 5, 23531, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239192, 2496, 4566, 5, 23532, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239193, 2496, 4566, 5, 23533, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239194, 2496, 4566, 5, 23534, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239195, 2496, 4566, 5, 23535, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239196, 2496, 4566, 5, 23536, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239197, 2496, 4566, 5, 23537, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239198, 2496, 4566, 5, 23538, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239199, 2496, 4566, 5, 23539, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239200, 2496, 4566, 5, 23540, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239201, 2496, 4566, 5, 23541, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239202, 2496, 4566, 5, 23542, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239203, 2496, 4566, 5, 23543, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239204, 2496, 4566, 5, 23544, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239205, 2496, 4566, 5, 23545, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239206, 2496, 4566, 5, 23546, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239207, 2496, 4566, 5, 23547, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239208, 2496, 4566, 5, 23548, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239209, 2496, 4566, 5, 23549, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239210, 2496, 4566, 5, 23550, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239211, 2496, 4566, 5, 23551, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239212, 2496, 4566, 5, 23552, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239213, 2496, 4566, 5, 23553, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239214, 2496, 4566, 5, 23554, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239215, 2496, 4566, 5, 23555, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239216, 2496, 4566, 5, 23556, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239217, 2496, 4566, 5, 23557, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239218, 2496, 4566, 5, 23558, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239219, 2496, 4566, 5, 23561, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239220, 2496, 4566, 5, 23562, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239221, 2496, 4566, 5, 23563, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239222, 2496, 4566, 5, 23564, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239223, 2496, 4566, 5, 23565, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239224, 2496, 4566, 5, 23566, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239225, 2496, 4566, 5, 23567, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239226, 2496, 4566, 5, 23568, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239227, 2496, 4566, 5, 23569, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239228, 2496, 4566, 5, 23570, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239229, 2496, 4566, 5, 23571, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239230, 2496, 4566, 5, 23572, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239231, 2496, 4566, 5, 23573, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239232, 2496, 4566, 5, 23574, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239233, 2496, 4566, 5, 23575, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239234, 2496, 4566, 5, 23576, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239235, 2496, 4566, 5, 23577, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239236, 2496, 4566, 5, 23578, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239237, 2496, 4566, 5, 23579, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239238, 2496, 4566, 5, 23580, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239239, 2496, 4566, 5, 23581, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239240, 2496, 4566, 5, 23582, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239241, 2496, 4566, 5, 23583, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239242, 2496, 4566, 5, 23584, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239243, 2496, 4566, 5, 23585, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239244, 2496, 4566, 5, 23586, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239245, 2496, 4566, 5, 23587, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239246, 2496, 4566, 5, 23588, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239247, 2496, 4566, 5, 23589, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239248, 2496, 4566, 5, 23590, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239249, 2496, 4566, 5, 23591, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239250, 2496, 4566, 5, 23592, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239251, 2496, 4566, 5, 23593, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239252, 2496, 4566, 5, 23594, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239253, 2496, 4566, 5, 23595, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239254, 2496, 4566, 5, 23596, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239255, 2496, 4566, 5, 23597, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239256, 2496, 4566, 5, 23598, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239257, 2496, 4566, 5, 23599, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239258, 2496, 4566, 5, 23600, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239259, 2496, 4566, 5, 23601, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239260, 2496, 4566, 5, 23602, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239261, 2496, 4566, 5, 23603, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239262, 2496, 4566, 5, 23604, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239263, 2496, 4566, 5, 23605, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239264, 2496, 4566, 5, 23606, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239265, 2496, 4566, 5, 23607, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239266, 2496, 4566, 5, 23608, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239267, 2496, 4566, 5, 23609, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239268, 2496, 4566, 5, 23610, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239269, 2496, 4566, 5, 23611, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239270, 2496, 4566, 5, 23612, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239271, 2496, 4566, 5, 23613, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239272, 2496, 4566, 5, 23614, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239273, 2496, 4566, 5, 23615, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239274, 2496, 4566, 5, 23616, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239275, 2496, 4566, 5, 23617, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239276, 2496, 4566, 5, 23618, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239277, 2496, 4566, 5, 23619, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239278, 2496, 4566, 5, 23620, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239279, 2496, 4566, 5, 23621, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239280, 2496, 4566, 5, 23622, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239281, 2496, 4566, 5, 23623, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239282, 2496, 4566, 5, 23624, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239283, 2496, 4566, 5, 22755, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239284, 2496, 4566, 5, 23559, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239285, 2496, 4566, 5, 23560, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239286, 2496, 4566, 5, 22745, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239287, 2497, 4566, 5, 22748, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239288, 2497, 4566, 5, 22753, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239289, 2497, 4566, 5, 22862, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239290, 2497, 4566, 5, 22911, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239291, 2497, 4566, 5, 22916, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239292, 2497, 4566, 5, 22925, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239293, 2497, 4566, 5, 22973, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239294, 2497, 4566, 5, 22989, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239295, 2497, 4566, 5, 23079, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239296, 2497, 4566, 5, 23131, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239297, 2497, 4566, 5, 23202, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239298, 2497, 4566, 5, 23246, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239299, 2497, 4566, 5, 23257, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239300, 2497, 4566, 5, 23258, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239301, 2497, 4566, 5, 23274, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239302, 2497, 4566, 5, 23299, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239303, 2497, 4566, 5, 23333, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239304, 2497, 4566, 5, 23353, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239305, 2497, 4566, 5, 23355, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239306, 2497, 4566, 5, 23360, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239307, 2497, 4566, 5, 23393, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239308, 2497, 4566, 5, 23404, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239309, 2497, 4566, 5, 23407, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239310, 2497, 4566, 5, 23408, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239311, 2497, 4566, 5, 23421, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239312, 2497, 4566, 5, 23422, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239313, 2497, 4566, 5, 23455, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239314, 2497, 4566, 5, 23456, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239315, 2497, 4566, 5, 23463, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239316, 2497, 4566, 5, 23509, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239317, 2497, 4566, 5, 23512, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239318, 2497, 4566, 5, 23518, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239319, 2497, 4566, 5, 23532, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239320, 2497, 4566, 5, 23536, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239321, 2497, 4566, 5, 23537, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239322, 2497, 4566, 5, 23592, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239323, 2497, 4566, 5, 23597, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239324, 2498, 4566, 5, 22754, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239325, 2498, 4566, 5, 22756, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239326, 2498, 4566, 5, 22760, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239327, 2498, 4566, 5, 22766, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239328, 2498, 4566, 5, 22773, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239329, 2498, 4566, 5, 22774, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239330, 2498, 4566, 5, 22776, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239331, 2498, 4566, 5, 22777, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239332, 2498, 4566, 5, 22778, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239333, 2498, 4566, 5, 22779, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239334, 2498, 4566, 5, 22780, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239335, 2498, 4566, 5, 22787, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239336, 2498, 4566, 5, 22798, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239337, 2498, 4566, 5, 22805, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239338, 2498, 4566, 5, 22806, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239339, 2498, 4566, 5, 22807, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239340, 2498, 4566, 5, 22813, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239341, 2498, 4566, 5, 22814, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239342, 2498, 4566, 5, 22817, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239343, 2498, 4566, 5, 22824, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239344, 2498, 4566, 5, 22825, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239345, 2498, 4566, 5, 22830, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239346, 2498, 4566, 5, 22841, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239347, 2498, 4566, 5, 22842, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239348, 2498, 4566, 5, 22846, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239349, 2498, 4566, 5, 22855, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239350, 2498, 4566, 5, 22856, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239351, 2498, 4566, 5, 22857, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239352, 2498, 4566, 5, 22858, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239353, 2498, 4566, 5, 22859, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239354, 2498, 4566, 5, 22865, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239355, 2498, 4566, 5, 22868, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239356, 2498, 4566, 5, 22869, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239357, 2498, 4566, 5, 22870, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239358, 2498, 4566, 5, 22875, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239359, 2498, 4566, 5, 22876, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239360, 2498, 4566, 5, 22880, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239361, 2498, 4566, 5, 22885, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239362, 2498, 4566, 5, 22892, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239363, 2498, 4566, 5, 22899, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239364, 2498, 4566, 5, 22906, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239365, 2498, 4566, 5, 22907, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239366, 2498, 4566, 5, 22908, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239367, 2498, 4566, 5, 22909, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239368, 2498, 4566, 5, 22913, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239369, 2498, 4566, 5, 22914, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239370, 2498, 4566, 5, 22915, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239371, 2498, 4566, 5, 22919, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239372, 2498, 4566, 5, 22920, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239373, 2498, 4566, 5, 22923, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239374, 2498, 4566, 5, 22951, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239375, 2498, 4566, 5, 22952, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239376, 2498, 4566, 5, 22953, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239377, 2498, 4566, 5, 22956, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239378, 2498, 4566, 5, 22957, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239379, 2498, 4566, 5, 22969, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239380, 2498, 4566, 5, 22977, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239381, 2498, 4566, 5, 22979, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239382, 2498, 4566, 5, 22980, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239383, 2498, 4566, 5, 22981, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239384, 2498, 4566, 5, 22982, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239385, 2498, 4566, 5, 22987, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239386, 2498, 4566, 5, 22988, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239387, 2498, 4566, 5, 22993, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239388, 2498, 4566, 5, 23007, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239389, 2498, 4566, 5, 23031, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239390, 2498, 4566, 5, 23032, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239391, 2498, 4566, 5, 23056, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239392, 2498, 4566, 5, 23061, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239393, 2498, 4566, 5, 23062, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239394, 2498, 4566, 5, 23063, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239395, 2498, 4566, 5, 23064, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239396, 2498, 4566, 5, 23066, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239397, 2498, 4566, 5, 23070, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239398, 2498, 4566, 5, 23071, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239399, 2498, 4566, 5, 23072, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239400, 2498, 4566, 5, 23073, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239401, 2498, 4566, 5, 23074, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239402, 2498, 4566, 5, 23075, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239403, 2498, 4566, 5, 23076, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239404, 2498, 4566, 5, 23089, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239405, 2498, 4566, 5, 23090, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239406, 2498, 4566, 5, 23093, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239407, 2498, 4566, 5, 23097, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239408, 2498, 4566, 5, 23102, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239409, 2498, 4566, 5, 23109, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239410, 2498, 4566, 5, 23110, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239411, 2498, 4566, 5, 23116, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239412, 2498, 4566, 5, 23117, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239413, 2498, 4566, 5, 23118, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239414, 2498, 4566, 5, 23120, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239415, 2498, 4566, 5, 23136, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239416, 2498, 4566, 5, 23137, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239417, 2498, 4566, 5, 23140, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239418, 2498, 4566, 5, 23142, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239419, 2498, 4566, 5, 23145, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239420, 2498, 4566, 5, 23146, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239421, 2498, 4566, 5, 23147, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239422, 2498, 4566, 5, 23148, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239423, 2498, 4566, 5, 23149, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239424, 2498, 4566, 5, 23150, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239425, 2498, 4566, 5, 23155, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239426, 2498, 4566, 5, 23157, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239427, 2498, 4566, 5, 23158, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239428, 2498, 4566, 5, 23164, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239429, 2498, 4566, 5, 23165, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239430, 2498, 4566, 5, 23166, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239431, 2498, 4566, 5, 23167, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239432, 2498, 4566, 5, 23171, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239433, 2498, 4566, 5, 23172, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239434, 2498, 4566, 5, 23174, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239435, 2498, 4566, 5, 23175, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239436, 2498, 4566, 5, 23176, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239437, 2498, 4566, 5, 23189, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239438, 2498, 4566, 5, 23212, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239439, 2498, 4566, 5, 23213, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239440, 2498, 4566, 5, 23214, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239441, 2498, 4566, 5, 23215, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239442, 2498, 4566, 5, 23216, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239443, 2498, 4566, 5, 23217, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239444, 2498, 4566, 5, 23218, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239445, 2498, 4566, 5, 23232, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239446, 2498, 4566, 5, 23233, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239447, 2498, 4566, 5, 23234, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239448, 2498, 4566, 5, 23243, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239449, 2498, 4566, 5, 23244, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239450, 2498, 4566, 5, 23263, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239451, 2498, 4566, 5, 23268, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239452, 2498, 4566, 5, 23269, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239453, 2498, 4566, 5, 23270, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239454, 2498, 4566, 5, 23271, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239455, 2498, 4566, 5, 23272, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239456, 2498, 4566, 5, 23273, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239457, 2498, 4566, 5, 23277, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239458, 2498, 4566, 5, 23301, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239459, 2498, 4566, 5, 23302, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239460, 2498, 4566, 5, 23303, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239461, 2498, 4566, 5, 23306, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239462, 2498, 4566, 5, 23307, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239463, 2498, 4566, 5, 23308, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239464, 2498, 4566, 5, 23314, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239465, 2498, 4566, 5, 23327, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239466, 2498, 4566, 5, 23342, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239467, 2498, 4566, 5, 23347, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239468, 2498, 4566, 5, 23362, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239469, 2498, 4566, 5, 23363, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239470, 2498, 4566, 5, 23364, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239471, 2498, 4566, 5, 23365, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239472, 2498, 4566, 5, 23366, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239473, 2498, 4566, 5, 23367, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239474, 2498, 4566, 5, 23369, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239475, 2498, 4566, 5, 23373, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239476, 2498, 4566, 5, 23375, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239477, 2498, 4566, 5, 23385, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239478, 2498, 4566, 5, 23387, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239479, 2498, 4566, 5, 23390, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239480, 2498, 4566, 5, 23396, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239481, 2498, 4566, 5, 23397, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239482, 2498, 4566, 5, 23399, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239483, 2498, 4566, 5, 23400, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239484, 2498, 4566, 5, 23401, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239485, 2498, 4566, 5, 23409, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239486, 2498, 4566, 5, 23415, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239487, 2498, 4566, 5, 23416, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239488, 2498, 4566, 5, 23417, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239489, 2498, 4566, 5, 23426, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239490, 2498, 4566, 5, 23436, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239491, 2498, 4566, 5, 23437, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239492, 2498, 4566, 5, 23443, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239493, 2498, 4566, 5, 23444, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239494, 2498, 4566, 5, 23445, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239495, 2498, 4566, 5, 23446, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239496, 2498, 4566, 5, 23447, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239497, 2498, 4566, 5, 23448, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239498, 2498, 4566, 5, 23449, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239499, 2498, 4566, 5, 23450, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239500, 2498, 4566, 5, 23451, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239501, 2498, 4566, 5, 23457, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239502, 2498, 4566, 5, 23458, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239503, 2498, 4566, 5, 23465, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239504, 2498, 4566, 5, 23466, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239505, 2498, 4566, 5, 23467, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239506, 2498, 4566, 5, 23470, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239507, 2498, 4566, 5, 23476, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239508, 2498, 4566, 5, 23477, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239509, 2498, 4566, 5, 23478, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239510, 2498, 4566, 5, 23479, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239511, 2498, 4566, 5, 23481, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239512, 2498, 4566, 5, 23482, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239513, 2498, 4566, 5, 23483, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239514, 2498, 4566, 5, 23484, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239515, 2498, 4566, 5, 23488, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239516, 2498, 4566, 5, 23490, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239517, 2498, 4566, 5, 23492, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239518, 2498, 4566, 5, 23493, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239519, 2498, 4566, 5, 23494, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239520, 2498, 4566, 5, 23496, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239521, 2498, 4566, 5, 23497, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239522, 2498, 4566, 5, 23500, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239523, 2498, 4566, 5, 23513, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239524, 2498, 4566, 5, 23514, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239525, 2498, 4566, 5, 23515, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239526, 2498, 4566, 5, 23540, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239527, 2498, 4566, 5, 23541, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239528, 2498, 4566, 5, 23542, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239529, 2498, 4566, 5, 23544, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239530, 2498, 4566, 5, 23545, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239531, 2498, 4566, 5, 23546, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239532, 2498, 4566, 5, 23547, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239533, 2498, 4566, 5, 23548, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239534, 2498, 4566, 5, 23554, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239535, 2498, 4566, 5, 23558, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239536, 2498, 4566, 5, 23561, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239537, 2498, 4566, 5, 23564, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239538, 2498, 4566, 5, 23568, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239539, 2498, 4566, 5, 23570, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239540, 2498, 4566, 5, 23571, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239541, 2498, 4566, 5, 23572, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239542, 2498, 4566, 5, 23573, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239543, 2498, 4566, 5, 23574, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239544, 2498, 4566, 5, 23577, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239545, 2498, 4566, 5, 23579, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239546, 2498, 4566, 5, 23580, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239547, 2498, 4566, 5, 23581, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239548, 2498, 4566, 5, 23582, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239549, 2498, 4566, 5, 23588, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239550, 2498, 4566, 5, 23590, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239551, 2498, 4566, 5, 23591, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239552, 2498, 4566, 5, 23594, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239553, 2498, 4566, 5, 23595, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239554, 2498, 4566, 5, 23596, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239555, 2498, 4566, 5, 23599, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239556, 2498, 4566, 5, 23601, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239557, 2498, 4566, 5, 23602, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239558, 2498, 4566, 5, 23603, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239559, 2498, 4566, 5, 23604, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239560, 2498, 4566, 5, 23605, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239561, 2498, 4566, 5, 23606, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239562, 2498, 4566, 5, 23608, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239563, 2498, 4566, 5, 23609, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239564, 2498, 4566, 5, 23615, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239565, 2498, 4566, 5, 23621, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239566, 2499, 4566, 5, 22772, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239567, 2499, 4566, 5, 22790, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239568, 2499, 4566, 5, 22795, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239569, 2499, 4566, 5, 22808, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239570, 2499, 4566, 5, 22819, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239571, 2499, 4566, 5, 22832, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239572, 2499, 4566, 5, 22837, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239573, 2499, 4566, 5, 22927, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239574, 2499, 4566, 5, 22955, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239575, 2499, 4566, 5, 22970, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239576, 2499, 4566, 5, 23004, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239577, 2499, 4566, 5, 23068, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239578, 2499, 4566, 5, 23083, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239579, 2499, 4566, 5, 23128, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239580, 2499, 4566, 5, 23134, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239581, 2499, 4566, 5, 23143, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239582, 2499, 4566, 5, 23170, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239583, 2499, 4566, 5, 23186, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239584, 2499, 4566, 5, 23188, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239585, 2499, 4566, 5, 23191, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239586, 2499, 4566, 5, 23205, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239587, 2499, 4566, 5, 23222, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239588, 2499, 4566, 5, 23231, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239589, 2499, 4566, 5, 23266, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239590, 2499, 4566, 5, 23434, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239591, 2499, 4566, 5, 23559, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239592, 2499, 4566, 5, 23560, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239593, 3424, 4567, 2, 22745, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239594, 3425, 4567, 2, 22746, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239595, 3425, 4567, 2, 22747, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239596, 3426, 4567, 2, 22748, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239597, 3427, 4567, 2, 22749, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239598, 3427, 4567, 2, 22750, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239599, 3428, 4567, 2, 22751, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239600, 3428, 4567, 2, 22784, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239601, 3428, 4567, 2, 22786, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239602, 3428, 4567, 2, 22918, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239603, 3429, 4567, 2, 22752, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239604, 3430, 4567, 2, 22753, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239605, 3431, 4567, 2, 22755, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239606, 3432, 4567, 2, 22756, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239607, 3433, 4567, 2, 22757, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239608, 3434, 4567, 2, 22758, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239609, 3434, 4567, 2, 22759, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239610, 3435, 4567, 2, 22760, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239611, 3436, 4567, 2, 22761, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239612, 3436, 4567, 2, 22762, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239613, 3436, 4567, 2, 22921, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239614, 3436, 4567, 2, 22970, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239615, 3437, 4567, 2, 22763, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239616, 3437, 4567, 2, 22765, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239617, 3438, 4567, 2, 22764, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239618, 3439, 4567, 2, 22767, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239619, 3439, 4567, 2, 22781, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239620, 3439, 4567, 2, 22782, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239621, 3439, 4567, 2, 22971, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239622, 3440, 4567, 2, 22768, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239623, 3440, 4567, 2, 22770, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239624, 3440, 4567, 2, 22771, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239625, 3441, 4567, 2, 22769, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239626, 3441, 4567, 2, 22772, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239627, 3442, 4567, 2, 22773, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239628, 3443, 4567, 2, 22775, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239629, 3444, 4567, 2, 22776, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239630, 3445, 4567, 2, 22777, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239631, 3446, 4567, 2, 22778, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239632, 3447, 4567, 2, 22779, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239633, 3448, 4567, 2, 22783, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239634, 3448, 4567, 2, 22826, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239635, 3449, 4567, 2, 22785, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239636, 3449, 4567, 2, 22799, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239637, 3449, 4567, 2, 22800, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239638, 3449, 4567, 2, 23094, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239639, 3450, 4567, 2, 22787, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239640, 3451, 4567, 2, 22788, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239641, 3451, 4567, 2, 22789, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239642, 3451, 4567, 2, 22790, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239643, 3451, 4567, 2, 22791, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239644, 3451, 4567, 2, 22792, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239645, 3451, 4567, 2, 22793, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239646, 3452, 4567, 2, 22794, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239647, 3452, 4567, 2, 22795, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239648, 3452, 4567, 2, 22796, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239649, 3452, 4567, 2, 22797, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239650, 3453, 4567, 2, 22798, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239651, 3454, 4567, 2, 22801, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239652, 3454, 4567, 2, 22802, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239653, 3454, 4567, 2, 22803, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239654, 3455, 4567, 2, 22804, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239655, 3455, 4567, 2, 22989, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239656, 3456, 4567, 2, 22805, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239657, 3457, 4567, 2, 22807, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239658, 3458, 4567, 2, 22808, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239659, 3458, 4567, 2, 22809, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239660, 3459, 4567, 2, 22811, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239661, 3459, 4567, 2, 22812, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239662, 3460, 4567, 2, 22815, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239663, 3460, 4567, 2, 22816, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239664, 3461, 4567, 2, 22817, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239665, 3462, 4567, 2, 22818, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239666, 3463, 4567, 2, 22819, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239667, 3463, 4567, 2, 22820, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239668, 3464, 4567, 2, 22821, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239669, 3464, 4567, 2, 22822, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239670, 3465, 4567, 2, 22823, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239671, 3466, 4567, 2, 22824, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239672, 3467, 4567, 2, 22824, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239673, 3467, 4567, 2, 23445, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239674, 3467, 4567, 2, 23491, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239675, 3467, 4567, 2, 23574, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239676, 3467, 4567, 2, 23604, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239677, 3468, 4567, 2, 22824, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239678, 3469, 4567, 2, 22825, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239679, 3470, 4567, 2, 22827, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239680, 3470, 4567, 2, 22828, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239681, 3470, 4567, 2, 22922, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239682, 3470, 4567, 2, 22992, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239683, 3471, 4567, 2, 22829, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239684, 3472, 4567, 2, 22830, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239685, 3473, 4567, 2, 22831, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239686, 3473, 4567, 2, 22832, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239687, 3473, 4567, 2, 22833, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239688, 3473, 4567, 2, 22834, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239689, 3473, 4567, 2, 22835, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239690, 3473, 4567, 2, 22836, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239691, 3474, 4567, 2, 22837, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239692, 3474, 4567, 2, 22838, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239693, 3474, 4567, 2, 22839, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239694, 3474, 4567, 2, 22840, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239695, 3475, 4567, 2, 22842, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239696, 3476, 4567, 2, 22844, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239697, 3477, 4567, 2, 22845, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239698, 3478, 4567, 2, 22846, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239699, 3479, 4567, 2, 22847, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239700, 3480, 4567, 2, 22848, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239701, 3480, 4567, 2, 22849, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239702, 3480, 4567, 2, 22850, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239703, 3480, 4567, 2, 22851, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239704, 3481, 4567, 2, 22852, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239705, 3481, 4567, 2, 22853, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239706, 3481, 4567, 2, 22854, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239707, 3482, 4567, 2, 22855, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239708, 3483, 4567, 2, 22856, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239709, 3484, 4567, 2, 22857, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239710, 3485, 4567, 2, 22858, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239711, 3486, 4567, 2, 22859, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239712, 3487, 4567, 2, 22860, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239713, 3487, 4567, 2, 22886, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239714, 3488, 4567, 2, 22861, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239715, 3488, 4567, 2, 22862, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239716, 3488, 4567, 2, 22863, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239717, 3488, 4567, 2, 22864, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239718, 3489, 4567, 2, 22861, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239719, 3489, 4567, 2, 22862, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239720, 3489, 4567, 2, 22863, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239721, 3489, 4567, 2, 22864, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239722, 3490, 4567, 2, 22866, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239723, 3491, 4567, 2, 22867, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239724, 3492, 4567, 2, 22868, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239725, 3493, 4567, 2, 22869, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239726, 3494, 4567, 2, 22870, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239727, 3495, 4567, 2, 22871, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239728, 3495, 4567, 2, 22872, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239729, 3495, 4567, 2, 22873, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239730, 3495, 4567, 2, 22874, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239731, 3495, 4567, 2, 23047, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239732, 3496, 4567, 2, 22875, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239733, 3497, 4567, 2, 22876, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239734, 3498, 4567, 2, 22877, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239735, 3498, 4567, 2, 22878, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239736, 3498, 4567, 2, 22879, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239737, 3499, 4567, 2, 22877, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239738, 3499, 4567, 2, 22878, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239739, 3499, 4567, 2, 22879, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239740, 3500, 4567, 2, 22880, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239741, 3501, 4567, 2, 22881, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239742, 3501, 4567, 2, 22882, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239743, 3501, 4567, 2, 22883, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239744, 3501, 4567, 2, 22884, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239745, 3502, 4567, 2, 22885, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239746, 3503, 4567, 2, 22887, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239747, 3503, 4567, 2, 22891, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239748, 3503, 4567, 2, 22893, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239749, 3503, 4567, 2, 22894, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239750, 3503, 4567, 2, 22901, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239751, 3503, 4567, 2, 22916, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239752, 3503, 4567, 2, 22917, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239753, 3504, 4567, 2, 22888, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239754, 3504, 4567, 2, 22889, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239755, 3504, 4567, 2, 22900, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239756, 3505, 4567, 2, 22890, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239757, 3506, 4567, 2, 22892, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239758, 3507, 4567, 2, 22895, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239759, 3507, 4567, 2, 22896, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239760, 3507, 4567, 2, 22897, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239761, 3507, 4567, 2, 23009, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239762, 3508, 4567, 2, 22898, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239763, 3509, 4567, 2, 22899, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239764, 3510, 4567, 2, 22902, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239765, 3511, 4567, 2, 22903, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239766, 3511, 4567, 2, 22904, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239767, 3512, 4567, 2, 22905, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239768, 3513, 4567, 2, 22906, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239769, 3513, 4567, 2, 23174, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239770, 3514, 4567, 2, 22907, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239771, 3515, 4567, 2, 22908, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239772, 3516, 4567, 2, 22909, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239773, 3517, 4567, 2, 22910, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239774, 3517, 4567, 2, 22911, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239775, 3517, 4567, 2, 22912, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239776, 3517, 4567, 2, 23075, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239777, 3517, 4567, 2, 23156, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239778, 3518, 4567, 2, 22910, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239779, 3518, 4567, 2, 22911, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239780, 3518, 4567, 2, 22912, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239781, 3518, 4567, 2, 23156, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239782, 3519, 4567, 2, 22913, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239783, 3519, 4567, 2, 22914, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239784, 3520, 4567, 2, 22915, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239785, 3520, 4567, 2, 23146, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239786, 3521, 4567, 2, 22919, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239787, 3522, 4567, 2, 22920, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239788, 3523, 4567, 2, 22923, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239789, 3524, 4567, 2, 22924, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239790, 3524, 4567, 2, 22925, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239791, 3525, 4567, 2, 22926, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239792, 3525, 4567, 2, 22927, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239793, 3525, 4567, 2, 22928, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239794, 3525, 4567, 2, 23014, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239795, 3525, 4567, 2, 23096, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239796, 3526, 4567, 2, 22934, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239797, 3526, 4567, 2, 22935, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239798, 3527, 4567, 2, 22954, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239799, 3527, 4567, 2, 22955, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239800, 3527, 4567, 2, 22958, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239801, 3527, 4567, 2, 22959, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239802, 3527, 4567, 2, 22960, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239803, 3528, 4567, 2, 22957, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239804, 3529, 4567, 2, 22967, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239805, 3529, 4567, 2, 22968, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239806, 3529, 4567, 2, 23054, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239807, 3529, 4567, 2, 23231, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239808, 3530, 4567, 2, 22969, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239809, 3531, 4567, 2, 22972, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239810, 3531, 4567, 2, 22973, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239811, 3531, 4567, 2, 22974, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239812, 3531, 4567, 2, 22975, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239813, 3531, 4567, 2, 22976, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239814, 3532, 4567, 2, 22978, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239815, 3532, 4567, 2, 23033, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239816, 3532, 4567, 2, 23034, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239817, 3532, 4567, 2, 23035, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239818, 3532, 4567, 2, 23036, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239819, 3533, 4567, 2, 22979, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239820, 3534, 4567, 2, 22980, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239821, 3535, 4567, 2, 22981, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239822, 3536, 4567, 2, 22983, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239823, 3536, 4567, 2, 22984, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239824, 3536, 4567, 2, 22985, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239825, 3536, 4567, 2, 22986, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239826, 3537, 4567, 2, 22988, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239827, 3538, 4567, 2, 22991, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239828, 3538, 4567, 2, 23058, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239829, 3538, 4567, 2, 23274, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239830, 3539, 4567, 2, 22993, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239831, 3539, 4567, 2, 23272, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239832, 3540, 4567, 2, 22996, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239833, 3540, 4567, 2, 22997, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239834, 3540, 4567, 2, 22998, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239835, 3541, 4567, 2, 22996, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239836, 3541, 4567, 2, 22997, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239837, 3541, 4567, 2, 22998, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239838, 3542, 4567, 2, 22999, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239839, 3542, 4567, 2, 23000, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239840, 3542, 4567, 2, 23001, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239841, 3542, 4567, 2, 23095, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239842, 3543, 4567, 2, 23002, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239843, 3543, 4567, 2, 23003, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239844, 3544, 4567, 2, 23004, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239845, 3544, 4567, 2, 23005, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239846, 3544, 4567, 2, 23006, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239847, 3545, 4567, 2, 23010, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239848, 3545, 4567, 2, 23011, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239849, 3545, 4567, 2, 23012, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239850, 3545, 4567, 2, 23013, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239851, 3546, 4567, 2, 23016, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239852, 3546, 4567, 2, 23017, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239853, 3546, 4567, 2, 23018, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239854, 3546, 4567, 2, 23019, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239855, 3546, 4567, 2, 23020, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239856, 3546, 4567, 2, 23021, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239857, 3546, 4567, 2, 23103, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239858, 3546, 4567, 2, 23219, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239859, 3547, 4567, 2, 23032, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239860, 3548, 4567, 2, 23037, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239861, 3548, 4567, 2, 23038, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239862, 3548, 4567, 2, 23039, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239863, 3548, 4567, 2, 23040, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239864, 3548, 4567, 2, 23041, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239865, 3548, 4567, 2, 23042, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239866, 3548, 4567, 2, 23043, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239867, 3548, 4567, 2, 23044, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239868, 3548, 4567, 2, 23045, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239869, 3548, 4567, 2, 23046, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239870, 3548, 4567, 2, 23112, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239871, 3549, 4567, 2, 23048, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239872, 3549, 4567, 2, 23049, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239873, 3549, 4567, 2, 23050, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239874, 3549, 4567, 2, 23051, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239875, 3549, 4567, 2, 23052, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239876, 3549, 4567, 2, 23053, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239877, 3549, 4567, 2, 23119, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239878, 3550, 4567, 2, 23057, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239879, 3551, 4567, 2, 23059, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239880, 3552, 4567, 2, 23061, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239881, 3553, 4567, 2, 23062, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239882, 3554, 4567, 2, 23063, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239883, 3554, 4567, 2, 23071, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239884, 3554, 4567, 2, 23142, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239885, 3555, 4567, 2, 23064, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239886, 3556, 4567, 2, 23065, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239887, 3556, 4567, 2, 23067, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239888, 3556, 4567, 2, 23068, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239889, 3556, 4567, 2, 23069, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239890, 3557, 4567, 2, 23066, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239891, 3558, 4567, 2, 23070, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239892, 3559, 4567, 2, 23073, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239893, 3560, 4567, 2, 23074, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239894, 3561, 4567, 2, 23076, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239895, 3562, 4567, 2, 23077, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239896, 3562, 4567, 2, 23078, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239897, 3562, 4567, 2, 23079, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239898, 3562, 4567, 2, 23080, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239899, 3563, 4567, 2, 23081, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239900, 3563, 4567, 2, 23082, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239901, 3563, 4567, 2, 23083, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239902, 3563, 4567, 2, 23084, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239903, 3563, 4567, 2, 23122, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239904, 3563, 4567, 2, 23305, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239905, 3564, 4567, 2, 23085, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239906, 3564, 4567, 2, 23086, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239907, 3565, 4567, 2, 23090, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239908, 3566, 4567, 2, 23093, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239909, 3567, 4567, 2, 23097, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239910, 3568, 4567, 2, 23098, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239911, 3568, 4567, 2, 23099, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239912, 3568, 4567, 2, 23100, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239913, 3568, 4567, 2, 23101, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239914, 3569, 4567, 2, 23102, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239915, 3570, 4567, 2, 23110, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239916, 3571, 4567, 2, 23111, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239917, 3571, 4567, 2, 23113, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239918, 3572, 4567, 2, 23114, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239919, 3572, 4567, 2, 23115, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239920, 3573, 4567, 2, 23116, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239921, 3574, 4567, 2, 23117, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239922, 3575, 4567, 2, 23118, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239923, 3576, 4567, 2, 23120, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239924, 3577, 4567, 2, 23121, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239925, 3577, 4567, 2, 23169, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239926, 3577, 4567, 2, 23170, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239927, 3578, 4567, 2, 23123, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239928, 3578, 4567, 2, 23124, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239929, 3578, 4567, 2, 23125, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239930, 3578, 4567, 2, 23126, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239931, 3578, 4567, 2, 23127, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239932, 3578, 4567, 2, 23371, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239933, 3579, 4567, 2, 23128, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239934, 3579, 4567, 2, 23129, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239935, 3580, 4567, 2, 23130, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239936, 3580, 4567, 2, 23131, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239937, 3580, 4567, 2, 23370, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239938, 3581, 4567, 2, 23132, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239939, 3581, 4567, 2, 23133, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239940, 3581, 4567, 2, 23134, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239941, 3581, 4567, 2, 23135, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239942, 3582, 4567, 2, 23136, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239943, 3583, 4567, 2, 23137, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239944, 3584, 4567, 2, 23140, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239945, 3585, 4567, 2, 23141, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239946, 3585, 4567, 2, 23143, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239947, 3585, 4567, 2, 23144, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239948, 3586, 4567, 2, 23145, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239949, 3587, 4567, 2, 23147, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239950, 3588, 4567, 2, 23148, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239951, 3589, 4567, 2, 23149, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239952, 3590, 4567, 2, 23150, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239953, 3591, 4567, 2, 23155, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239954, 3592, 4567, 2, 23157, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239955, 3593, 4567, 2, 23158, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239956, 3594, 4567, 2, 23164, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239957, 3595, 4567, 2, 23165, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239958, 3596, 4567, 2, 23167, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239959, 3597, 4567, 2, 23171, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239960, 3598, 4567, 2, 23172, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239961, 3599, 4567, 2, 23173, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239962, 3600, 4567, 2, 23175, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239963, 3601, 4567, 2, 23176, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239964, 3602, 4567, 2, 23177, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239965, 3602, 4567, 2, 23178, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239966, 3603, 4567, 2, 23179, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239967, 3603, 4567, 2, 23188, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239968, 3604, 4567, 2, 23181, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239969, 3604, 4567, 2, 23182, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239970, 3605, 4567, 2, 23183, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239971, 3605, 4567, 2, 23184, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239972, 3605, 4567, 2, 23185, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239973, 3605, 4567, 2, 23186, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239974, 3605, 4567, 2, 23187, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239975, 3605, 4567, 2, 23201, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239976, 3605, 4567, 2, 23204, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239977, 3605, 4567, 2, 23205, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239978, 3605, 4567, 2, 23206, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239979, 3606, 4567, 2, 23189, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239980, 3607, 4567, 2, 23190, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239981, 3607, 4567, 2, 23191, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239982, 3608, 4567, 2, 23202, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239983, 3608, 4567, 2, 23203, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239984, 3609, 4567, 2, 23207, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239985, 3609, 4567, 2, 23208, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239986, 3609, 4567, 2, 23209, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239987, 3609, 4567, 2, 23210, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239988, 3609, 4567, 2, 23211, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239989, 3610, 4567, 2, 23212, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239990, 3611, 4567, 2, 23214, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239991, 3612, 4567, 2, 23215, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239992, 3613, 4567, 2, 23216, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239993, 3614, 4567, 2, 23217, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239994, 3615, 4567, 2, 23218, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239995, 3616, 4567, 2, 23220, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239996, 3616, 4567, 2, 23221, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239997, 3617, 4567, 2, 23222, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239998, 3617, 4567, 2, 23223, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (239999, 3618, 4567, 2, 23222, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240000, 3618, 4567, 2, 23223, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240001, 3619, 4567, 2, 23224, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240002, 3619, 4567, 2, 23225, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240003, 3620, 4567, 2, 23226, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240004, 3620, 4567, 2, 23227, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240005, 3620, 4567, 2, 23228, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240006, 3620, 4567, 2, 23229, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240007, 3620, 4567, 2, 23230, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240008, 3621, 4567, 2, 23232, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240009, 3622, 4567, 2, 23234, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240010, 3623, 4567, 2, 23235, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240011, 3623, 4567, 2, 23236, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240012, 3623, 4567, 2, 23237, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240013, 3623, 4567, 2, 23238, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240014, 3624, 4567, 2, 23243, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240015, 3625, 4567, 2, 23244, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240016, 3626, 4567, 2, 23245, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240017, 3626, 4567, 2, 23246, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240018, 3626, 4567, 2, 23247, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240019, 3626, 4567, 2, 23248, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240020, 3626, 4567, 2, 23249, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240021, 3626, 4567, 2, 23250, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240022, 3626, 4567, 2, 23251, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240023, 3626, 4567, 2, 23252, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240024, 3626, 4567, 2, 23253, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240025, 3626, 4567, 2, 23254, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240026, 3626, 4567, 2, 23255, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240027, 3626, 4567, 2, 23256, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240028, 3626, 4567, 2, 23257, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240029, 3626, 4567, 2, 23258, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240030, 3626, 4567, 2, 23259, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240031, 3626, 4567, 2, 23261, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240032, 3626, 4567, 2, 23262, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240033, 3626, 4567, 2, 23456, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240034, 3627, 4567, 2, 23263, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240035, 3628, 4567, 2, 23265, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240036, 3628, 4567, 2, 23267, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240037, 3629, 4567, 2, 23266, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240038, 3630, 4567, 2, 23268, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240039, 3631, 4567, 2, 23269, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240040, 3632, 4567, 2, 23271, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240041, 3633, 4567, 2, 23273, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240042, 3634, 4567, 2, 23275, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240043, 3635, 4567, 2, 23276, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240044, 3636, 4567, 2, 23277, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240045, 3637, 4567, 2, 23278, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240046, 3637, 4567, 2, 23282, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240047, 3637, 4567, 2, 23284, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240048, 3638, 4567, 2, 23279, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240049, 3638, 4567, 2, 23280, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240050, 3638, 4567, 2, 23281, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240051, 3638, 4567, 2, 23283, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240052, 3639, 4567, 2, 23285, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240053, 3639, 4567, 2, 23286, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240054, 3639, 4567, 2, 23287, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240055, 3640, 4567, 2, 23288, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240056, 3640, 4567, 2, 23290, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240057, 3640, 4567, 2, 23291, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240058, 3640, 4567, 2, 23294, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240059, 3641, 4567, 2, 23289, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240060, 3641, 4567, 2, 23292, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240061, 3641, 4567, 2, 23293, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240062, 3641, 4567, 2, 23295, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240063, 3642, 4567, 2, 23296, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240064, 3642, 4567, 2, 23297, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240065, 3642, 4567, 2, 23298, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240066, 3642, 4567, 2, 23299, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240067, 3642, 4567, 2, 23300, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240068, 3643, 4567, 2, 23301, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240069, 3644, 4567, 2, 23302, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240070, 3645, 4567, 2, 23303, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240071, 3646, 4567, 2, 23304, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240072, 3647, 4567, 2, 23306, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240073, 3648, 4567, 2, 23307, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240074, 3649, 4567, 2, 23308, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240075, 3650, 4567, 2, 23309, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240076, 3650, 4567, 2, 23310, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240077, 3650, 4567, 2, 23311, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240078, 3650, 4567, 2, 23312, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240079, 3650, 4567, 2, 23313, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240080, 3651, 4567, 2, 23315, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240081, 3651, 4567, 2, 23316, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240082, 3651, 4567, 2, 23317, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240083, 3651, 4567, 2, 23318, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240084, 3651, 4567, 2, 23319, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240085, 3652, 4567, 2, 23320, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240086, 3652, 4567, 2, 23323, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240087, 3652, 4567, 2, 23325, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240088, 3652, 4567, 2, 23418, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240089, 3652, 4567, 2, 23452, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240090, 3653, 4567, 2, 23321, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240091, 3653, 4567, 2, 23322, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240092, 3653, 4567, 2, 23326, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240093, 3654, 4567, 2, 23324, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240094, 3655, 4567, 2, 23328, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240095, 3655, 4567, 2, 23329, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240096, 3656, 4567, 2, 23330, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240097, 3656, 4567, 2, 23332, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240098, 3656, 4567, 2, 23333, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240099, 3656, 4567, 2, 23505, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240100, 3657, 4567, 2, 23331, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240101, 3658, 4567, 2, 23335, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240102, 3658, 4567, 2, 23336, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240103, 3658, 4567, 2, 23337, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240104, 3658, 4567, 2, 23341, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240105, 3659, 4567, 2, 23335, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240106, 3659, 4567, 2, 23336, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240107, 3659, 4567, 2, 23337, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240108, 3659, 4567, 2, 23341, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240109, 3660, 4567, 2, 23342, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240110, 3661, 4567, 2, 23343, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240111, 3661, 4567, 2, 23383, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240112, 3661, 4567, 2, 23384, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240113, 3661, 4567, 2, 23386, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240114, 3662, 4567, 2, 23344, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240115, 3662, 4567, 2, 23345, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240116, 3662, 4567, 2, 23346, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240117, 3663, 4567, 2, 23348, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240118, 3664, 4567, 2, 23349, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240119, 3664, 4567, 2, 23354, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240120, 3664, 4567, 2, 23355, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240121, 3664, 4567, 2, 23356, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240122, 3665, 4567, 2, 23349, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240123, 3665, 4567, 2, 23354, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240124, 3665, 4567, 2, 23355, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240125, 3665, 4567, 2, 23356, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240126, 3666, 4567, 2, 23350, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240127, 3666, 4567, 2, 23351, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240128, 3666, 4567, 2, 23352, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240129, 3666, 4567, 2, 23353, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240130, 3666, 4567, 2, 23357, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240131, 3667, 4567, 2, 23350, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240132, 3667, 4567, 2, 23351, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240133, 3667, 4567, 2, 23352, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240134, 3667, 4567, 2, 23353, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240135, 3667, 4567, 2, 23357, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240136, 3668, 4567, 2, 23358, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240137, 3668, 4567, 2, 23359, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240138, 3668, 4567, 2, 23360, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240139, 3668, 4567, 2, 23361, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240140, 3669, 4567, 2, 23362, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240141, 3670, 4567, 2, 23363, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240142, 3671, 4567, 2, 23364, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240143, 3672, 4567, 2, 23365, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240144, 3672, 4567, 2, 23396, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240145, 3673, 4567, 2, 23365, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240146, 3674, 4567, 2, 23366, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240147, 3675, 4567, 2, 23367, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240148, 3676, 4567, 2, 23367, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240149, 3677, 4567, 2, 23369, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240150, 3678, 4567, 2, 23374, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240151, 3678, 4567, 2, 23379, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240152, 3679, 4567, 2, 23374, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240153, 3679, 4567, 2, 23379, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240154, 3680, 4567, 2, 23374, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240155, 3680, 4567, 2, 23379, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240156, 3681, 4567, 2, 23375, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240157, 3682, 4567, 2, 23376, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240158, 3683, 4567, 2, 23377, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240159, 3683, 4567, 2, 23378, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240160, 3684, 4567, 2, 23380, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240161, 3684, 4567, 2, 23381, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240162, 3684, 4567, 2, 23382, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240163, 3685, 4567, 2, 23380, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240164, 3685, 4567, 2, 23381, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240165, 3685, 4567, 2, 23382, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240166, 3686, 4567, 2, 23385, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240167, 3687, 4567, 2, 23385, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240168, 3688, 4567, 2, 23387, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240169, 3689, 4567, 2, 23388, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240170, 3690, 4567, 2, 23389, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240171, 3691, 4567, 2, 23390, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240172, 3692, 4567, 2, 23390, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240173, 3693, 4567, 2, 23391, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240174, 3693, 4567, 2, 23392, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240175, 3693, 4567, 2, 23393, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240176, 3693, 4567, 2, 23394, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240177, 3693, 4567, 2, 23485, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240178, 3694, 4567, 2, 23395, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240179, 3695, 4567, 2, 23396, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240180, 3696, 4567, 2, 23396, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240181, 3697, 4567, 2, 23397, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240182, 3698, 4567, 2, 23399, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240183, 3699, 4567, 2, 23400, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240184, 3700, 4567, 2, 23400, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240185, 3701, 4567, 2, 23401, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240186, 3702, 4567, 2, 23401, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240187, 3703, 4567, 2, 23401, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240188, 3704, 4567, 2, 23401, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240189, 3705, 4567, 2, 23402, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240190, 3705, 4567, 2, 23403, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240191, 3705, 4567, 2, 23404, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240192, 3706, 4567, 2, 23410, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240193, 3706, 4567, 2, 23411, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240194, 3706, 4567, 2, 23412, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240195, 3706, 4567, 2, 23413, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240196, 3706, 4567, 2, 23414, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240197, 3707, 4567, 2, 23415, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240198, 3708, 4567, 2, 23416, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240199, 3709, 4567, 2, 23417, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240200, 3710, 4567, 2, 23423, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240201, 3711, 4567, 2, 23425, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240202, 3712, 4567, 2, 23425, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240203, 3713, 4567, 2, 23426, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240204, 3714, 4567, 2, 23427, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240205, 3715, 4567, 2, 23429, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240206, 3716, 4567, 2, 23430, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240207, 3717, 4567, 2, 23431, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240208, 3718, 4567, 2, 23432, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240209, 3718, 4567, 2, 23433, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240210, 3718, 4567, 2, 23434, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240211, 3718, 4567, 2, 23435, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240212, 3719, 4567, 2, 23436, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240213, 3720, 4567, 2, 23437, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240214, 3721, 4567, 2, 23438, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240215, 3722, 4567, 2, 23441, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240216, 3722, 4567, 2, 23442, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240217, 3722, 4567, 2, 23593, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240218, 3722, 4567, 2, 23617, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240219, 3722, 4567, 2, 23618, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240220, 3723, 4567, 2, 23443, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240221, 3724, 4567, 2, 23444, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240222, 3725, 4567, 2, 23445, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240223, 3726, 4567, 2, 23445, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240224, 3727, 4567, 2, 23445, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240225, 3728, 4567, 2, 23446, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240226, 3729, 4567, 2, 23447, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240227, 3730, 4567, 2, 23448, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240228, 3731, 4567, 2, 23449, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240229, 3732, 4567, 2, 23450, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240230, 3733, 4567, 2, 23451, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240231, 3734, 4567, 2, 23453, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240232, 3734, 4567, 2, 23454, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240233, 3734, 4567, 2, 23455, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240234, 3735, 4567, 2, 23457, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240235, 3736, 4567, 2, 23458, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240236, 3737, 4567, 2, 23459, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240237, 3738, 4567, 2, 23460, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240238, 3738, 4567, 2, 23461, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240239, 3738, 4567, 2, 23462, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240240, 3738, 4567, 2, 23463, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240241, 3738, 4567, 2, 23479, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240242, 3738, 4567, 2, 23516, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240243, 3738, 4567, 2, 23517, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240244, 3738, 4567, 2, 23518, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240245, 3738, 4567, 2, 23519, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240246, 3739, 4567, 2, 23460, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240247, 3739, 4567, 2, 23461, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240248, 3739, 4567, 2, 23462, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240249, 3739, 4567, 2, 23463, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240250, 3739, 4567, 2, 23479, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240251, 3739, 4567, 2, 23516, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240252, 3739, 4567, 2, 23517, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240253, 3739, 4567, 2, 23518, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240254, 3739, 4567, 2, 23519, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240255, 3740, 4567, 2, 23463, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240256, 3741, 4567, 2, 23464, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240257, 3742, 4567, 2, 23464, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240258, 3743, 4567, 2, 23465, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240259, 3744, 4567, 2, 23468, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240260, 3744, 4567, 2, 23469, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240261, 3745, 4567, 2, 23470, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240262, 3746, 4567, 2, 23471, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240263, 3746, 4567, 2, 23472, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240264, 3746, 4567, 2, 23473, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240265, 3746, 4567, 2, 23474, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240266, 3746, 4567, 2, 23475, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240267, 3747, 4567, 2, 23477, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240268, 3748, 4567, 2, 23478, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240269, 3748, 4567, 2, 23491, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240270, 3749, 4567, 2, 23478, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240271, 3750, 4567, 2, 23479, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240272, 3751, 4567, 2, 23480, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240273, 3752, 4567, 2, 23481, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240274, 3752, 4567, 2, 23482, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240275, 3753, 4567, 2, 23483, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240276, 3754, 4567, 2, 23484, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240277, 3755, 4567, 2, 23486, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240278, 3755, 4567, 2, 23487, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240279, 3755, 4567, 2, 23489, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240280, 3756, 4567, 2, 23486, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240281, 3756, 4567, 2, 23487, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240282, 3756, 4567, 2, 23489, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240283, 3757, 4567, 2, 23488, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240284, 3758, 4567, 2, 23491, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240285, 3759, 4567, 2, 23491, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240286, 3760, 4567, 2, 23492, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240287, 3761, 4567, 2, 23493, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240288, 3762, 4567, 2, 23494, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240289, 3763, 4567, 2, 23495, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240290, 3764, 4567, 2, 23495, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240291, 3765, 4567, 2, 23496, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240292, 3766, 4567, 2, 23496, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240293, 3767, 4567, 2, 23497, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240294, 3768, 4567, 2, 23498, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240295, 3768, 4567, 2, 23499, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240296, 3768, 4567, 2, 23501, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240297, 3768, 4567, 2, 23502, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240298, 3768, 4567, 2, 23503, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240299, 3769, 4567, 2, 23500, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240300, 3770, 4567, 2, 23504, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240301, 3771, 4567, 2, 23506, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240302, 3771, 4567, 2, 23507, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240303, 3771, 4567, 2, 23508, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240304, 3771, 4567, 2, 23509, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240305, 3771, 4567, 2, 23569, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240306, 3772, 4567, 2, 23510, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240307, 3772, 4567, 2, 23511, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240308, 3772, 4567, 2, 23512, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240309, 3773, 4567, 2, 23513, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240310, 3774, 4567, 2, 23514, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240311, 3775, 4567, 2, 23515, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240312, 3776, 4567, 2, 23521, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240313, 3776, 4567, 2, 23522, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240314, 3776, 4567, 2, 23523, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240315, 3776, 4567, 2, 23525, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240316, 3776, 4567, 2, 23526, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240317, 3776, 4567, 2, 23559, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240318, 3777, 4567, 2, 23527, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240319, 3777, 4567, 2, 23528, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240320, 3778, 4567, 2, 23529, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240321, 3778, 4567, 2, 23560, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240322, 3779, 4567, 2, 23531, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240323, 3779, 4567, 2, 23532, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240324, 3780, 4567, 2, 23531, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240325, 3780, 4567, 2, 23532, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240326, 3781, 4567, 2, 23533, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240327, 3781, 4567, 2, 23536, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240328, 3782, 4567, 2, 23534, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240329, 3782, 4567, 2, 23535, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240330, 3782, 4567, 2, 23537, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240331, 3782, 4567, 2, 23538, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240332, 3783, 4567, 2, 23539, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240333, 3784, 4567, 2, 23540, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240334, 3785, 4567, 2, 23541, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240335, 3786, 4567, 2, 23542, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240336, 3787, 4567, 2, 23543, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240337, 3788, 4567, 2, 23544, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240338, 3789, 4567, 2, 23545, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240339, 3790, 4567, 2, 23546, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240340, 3791, 4567, 2, 23547, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240341, 3792, 4567, 2, 23550, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240342, 3793, 4567, 2, 23551, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240343, 3793, 4567, 2, 23552, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240344, 3794, 4567, 2, 23554, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240345, 3795, 4567, 2, 23555, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240346, 3796, 4567, 2, 23557, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240347, 3797, 4567, 2, 23558, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240348, 3798, 4567, 2, 23562, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240349, 3799, 4567, 2, 23562, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240350, 3800, 4567, 2, 23562, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240351, 3801, 4567, 2, 23562, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240352, 3802, 4567, 2, 23563, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240353, 3803, 4567, 2, 23564, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240354, 3804, 4567, 2, 23565, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240355, 3805, 4567, 2, 23566, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240356, 3805, 4567, 2, 23567, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240357, 3806, 4567, 2, 23568, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240358, 3807, 4567, 2, 23570, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240359, 3807, 4567, 2, 23571, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240360, 3807, 4567, 2, 23579, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240361, 3808, 4567, 2, 23572, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240362, 3809, 4567, 2, 23573, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240363, 3810, 4567, 2, 23574, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240364, 3811, 4567, 2, 23574, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240365, 3812, 4567, 2, 23574, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240366, 3813, 4567, 2, 23574, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240367, 3814, 4567, 2, 23575, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240368, 3815, 4567, 2, 23577, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240369, 3816, 4567, 2, 23580, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240370, 3817, 4567, 2, 23581, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240371, 3818, 4567, 2, 23582, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240372, 3819, 4567, 2, 23583, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240373, 3820, 4567, 2, 23583, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240374, 3821, 4567, 2, 23583, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240375, 3822, 4567, 2, 23584, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240376, 3823, 4567, 2, 23584, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240377, 3824, 4567, 2, 23584, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240378, 3825, 4567, 2, 23585, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240379, 3826, 4567, 2, 23586, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240380, 3827, 4567, 2, 23587, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240381, 3828, 4567, 2, 23588, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240382, 3829, 4567, 2, 23588, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240383, 3830, 4567, 2, 23589, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240384, 3830, 4567, 2, 23597, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240385, 3830, 4567, 2, 23598, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240386, 3831, 4567, 2, 23589, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240387, 3831, 4567, 2, 23598, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240388, 3832, 4567, 2, 23589, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240389, 3832, 4567, 2, 23598, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240390, 3833, 4567, 2, 23590, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240391, 3834, 4567, 2, 23591, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240392, 3835, 4567, 2, 23594, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240393, 3836, 4567, 2, 23595, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240394, 3837, 4567, 2, 23596, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240395, 3838, 4567, 2, 23599, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240396, 3839, 4567, 2, 23600, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240397, 3840, 4567, 2, 23601, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240398, 3841, 4567, 2, 23602, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240399, 3842, 4567, 2, 23603, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240400, 3843, 4567, 2, 23604, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240401, 3844, 4567, 2, 23604, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240402, 3845, 4567, 2, 23605, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240403, 3846, 4567, 2, 23606, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240404, 3847, 4567, 2, 23607, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240405, 3848, 4567, 2, 23607, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240406, 3849, 4567, 2, 23608, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240407, 3850, 4567, 2, 23609, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240408, 3851, 4567, 2, 23610, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240409, 3852, 4567, 2, 23611, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240410, 3853, 4567, 2, 23612, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240411, 3854, 4567, 2, 23613, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240412, 3854, 4567, 2, 23614, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240413, 3855, 4567, 2, 23616, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240414, 3856, 4567, 2, 23619, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240415, 3856, 4567, 2, 23623, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240416, 3857, 4567, 2, 23622, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (240417, 3858, 4567, 2, 23624, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (245765, 3111, 4565, 2, 22745, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (245773, 4608, 4565, 2, 23245, 80, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251110, 5362, 4580, 2, 23639, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251111, 5363, 4580, 2, 23634, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251112, 5365, 4580, 2, 23651, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251113, 5366, 4580, 2, 23652, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251114, 5366, 4580, 2, 23653, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251115, 5367, 4580, 2, 23654, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251116, 5368, 4580, 2, 23655, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251117, 5369, 4580, 2, 23656, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251118, 5370, 4580, 2, 23657, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251119, 5371, 4580, 2, 23818, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251120, 5373, 4580, 2, 23819, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251121, 5374, 4580, 2, 23943, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251122, 5375, 4580, 2, 23945, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251123, 5376, 4580, 2, 23950, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251124, 5378, 4580, 2, 23629, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251125, 5379, 4580, 2, 23951, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251126, 5380, 4580, 2, 23630, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251127, 5381, 4580, 2, 23952, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251128, 5382, 4580, 2, 23641, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251129, 5383, 4580, 2, 23642, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251130, 5384, 4580, 2, 23643, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251131, 5385, 4580, 2, 23953, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251132, 5386, 4580, 2, 23955, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251133, 5388, 4580, 2, 23956, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251134, 5389, 4580, 2, 23957, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251135, 5390, 4580, 2, 23625, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251136, 5391, 4580, 2, 23626, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251137, 5396, 4580, 2, 23636, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251138, 5397, 4580, 2, 23628, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251139, 5398, 4580, 2, 23640, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251140, 5399, 4580, 2, 23672, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251141, 5400, 4580, 2, 23635, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251142, 5401, 4580, 2, 23658, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251143, 5402, 4580, 2, 23659, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251144, 5403, 4580, 2, 23682, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251145, 5404, 4580, 2, 23660, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251146, 5405, 4580, 2, 23779, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251147, 5407, 4580, 2, 23780, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251148, 5408, 4580, 2, 23781, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251149, 5409, 4580, 2, 23782, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251150, 5409, 4580, 2, 23788, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251151, 5410, 4580, 2, 23783, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251152, 5411, 4580, 2, 23784, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251153, 5412, 4580, 2, 23785, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251154, 5413, 4580, 2, 23786, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251155, 5414, 4580, 2, 23683, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251156, 5415, 4580, 2, 23787, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251157, 5416, 4580, 2, 23684, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251158, 5417, 4580, 2, 23789, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251159, 5418, 4580, 2, 23790, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251160, 5419, 4580, 2, 23920, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251161, 5420, 4580, 2, 23921, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251162, 5421, 4580, 2, 23922, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251163, 5422, 4580, 2, 23923, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251164, 5423, 4580, 2, 23924, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251165, 5424, 4580, 2, 23925, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251166, 5425, 4580, 2, 23926, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251167, 5426, 4580, 2, 23631, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251168, 5427, 4580, 2, 23632, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251169, 5428, 4580, 2, 23644, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251170, 5429, 4580, 2, 23645, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251171, 5431, 4580, 2, 23646, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251172, 5432, 4580, 2, 23694, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251173, 5433, 4580, 2, 23695, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251174, 5434, 4580, 2, 23661, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251175, 5435, 4580, 2, 23662, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251176, 5436, 4580, 2, 23663, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251177, 5437, 4580, 2, 23664, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251178, 5441, 4580, 2, 23665, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251179, 5443, 4581, 2, 23639, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251180, 5445, 4581, 2, 23634, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251181, 5446, 4581, 2, 23651, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251182, 5449, 4581, 2, 23652, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251183, 5450, 4581, 2, 23653, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251184, 5451, 4581, 2, 23654, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251185, 5452, 4581, 2, 23655, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251186, 5453, 4581, 2, 23656, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251187, 5457, 4581, 2, 23818, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251188, 5464, 4581, 2, 23819, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251189, 5466, 4581, 2, 23943, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251190, 5467, 4581, 2, 23945, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251191, 5469, 4581, 2, 23950, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251192, 5470, 4581, 2, 23629, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251193, 5472, 4581, 2, 23951, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251194, 5473, 4581, 2, 23630, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251195, 5474, 4581, 2, 23641, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251196, 5475, 4581, 2, 23642, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251197, 5476, 4581, 2, 23952, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251198, 5477, 4581, 2, 23643, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251199, 5479, 4581, 2, 23953, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251200, 5480, 4581, 2, 23955, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251201, 5481, 4581, 2, 23956, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251202, 5482, 4581, 2, 23957, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251203, 5486, 4581, 2, 23625, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251204, 5487, 4581, 2, 23626, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251205, 5488, 4581, 2, 23635, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251206, 5491, 4581, 2, 23628, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251207, 5492, 4581, 2, 23636, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251208, 5493, 4581, 2, 23672, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251209, 5495, 4581, 2, 23640, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251210, 5496, 4581, 2, 23657, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251211, 5497, 4581, 2, 23658, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251212, 5498, 4581, 2, 23659, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251213, 5499, 4581, 2, 23682, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251214, 5500, 4581, 2, 23660, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251215, 5501, 4581, 2, 23779, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251216, 5502, 4581, 2, 23780, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251217, 5503, 4581, 2, 23781, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251218, 5504, 4581, 2, 23782, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251219, 5505, 4581, 2, 23783, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251220, 5506, 4581, 2, 23784, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251221, 5507, 4581, 2, 23785, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251222, 5508, 4581, 2, 23786, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251223, 5510, 4581, 2, 23683, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251224, 5511, 4581, 2, 23787, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251225, 5512, 4581, 2, 23684, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251226, 5513, 4581, 2, 23788, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251227, 5514, 4581, 2, 23789, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251228, 5515, 4581, 2, 23790, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251229, 5516, 4581, 2, 23920, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251230, 5517, 4581, 2, 23921, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251231, 5518, 4581, 2, 23922, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251232, 5519, 4581, 2, 23923, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251233, 5520, 4581, 2, 23924, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251234, 5521, 4581, 2, 23925, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251235, 5523, 4581, 2, 23926, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251236, 5525, 4581, 2, 23631, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251237, 5526, 4581, 2, 23632, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251238, 5528, 4581, 2, 23644, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251239, 5529, 4581, 2, 23645, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251240, 5530, 4581, 2, 23646, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251241, 5532, 4581, 2, 23694, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251242, 5533, 4581, 2, 23695, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251243, 5536, 4581, 2, 23661, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251244, 5538, 4581, 2, 23662, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251245, 5539, 4581, 2, 23663, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251246, 5541, 4581, 2, 23664, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251247, 5543, 4581, 2, 23665, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251248, 5545, 4582, 2, 23639, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251249, 5547, 4582, 2, 23634, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251250, 5548, 4582, 2, 23651, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251251, 5549, 4582, 2, 23652, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251252, 5550, 4582, 2, 23653, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251253, 5551, 4582, 2, 23654, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251254, 5552, 4582, 2, 23655, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251255, 5553, 4582, 2, 23656, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251256, 5556, 4582, 2, 23818, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251257, 5557, 4582, 2, 23819, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251258, 5558, 4582, 2, 23943, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251259, 5560, 4582, 2, 23945, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251260, 5561, 4582, 2, 23950, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251261, 5562, 4582, 2, 23629, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251262, 5563, 4582, 2, 23951, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251263, 5564, 4582, 2, 23630, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251264, 5565, 4582, 2, 23641, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251265, 5566, 4582, 2, 23642, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251266, 5567, 4582, 2, 23952, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251267, 5568, 4582, 2, 23643, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251268, 5570, 4582, 2, 23953, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251269, 5571, 4582, 2, 23955, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251270, 5572, 4582, 2, 23956, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251271, 5573, 4582, 2, 23957, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251272, 5574, 4582, 2, 23625, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251273, 5575, 4582, 2, 23626, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251274, 5576, 4582, 2, 23635, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251275, 5577, 4582, 2, 23636, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251276, 5578, 4582, 2, 23628, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251277, 5579, 4582, 2, 23672, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251278, 5580, 4582, 2, 23640, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251279, 5581, 4582, 2, 23657, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251280, 5582, 4582, 2, 23658, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251281, 5583, 4582, 2, 23659, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251282, 5584, 4582, 2, 23682, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251283, 5586, 4582, 2, 23683, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251284, 5587, 4582, 2, 23660, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251285, 5588, 4582, 2, 23779, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251286, 5589, 4582, 2, 23780, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251287, 5590, 4582, 2, 23781, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251288, 5591, 4582, 2, 23782, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251289, 5593, 4582, 2, 23783, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251290, 5594, 4582, 2, 23784, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251291, 5595, 4582, 2, 23785, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251292, 5596, 4582, 2, 23786, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251293, 5597, 4582, 2, 23787, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251294, 5598, 4582, 2, 23788, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251295, 5599, 4582, 2, 23684, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251296, 5600, 4582, 2, 23789, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251297, 5601, 4582, 2, 23790, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251298, 5602, 4582, 2, 23920, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251299, 5604, 4582, 2, 23921, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251300, 5605, 4582, 2, 23922, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251301, 5606, 4582, 2, 23923, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251302, 5607, 4582, 2, 23924, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251303, 5608, 4582, 2, 23925, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251304, 5609, 4582, 2, 23926, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251305, 5610, 4582, 2, 23631, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251306, 5612, 4582, 2, 23632, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251307, 5613, 4582, 2, 23644, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251308, 5614, 4582, 2, 23645, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251309, 5615, 4582, 2, 23646, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251310, 5616, 4582, 2, 23694, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251311, 5617, 4582, 2, 23695, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251312, 5618, 4582, 2, 23661, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251313, 5621, 4582, 2, 23662, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251314, 5622, 4582, 2, 23663, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251315, 5623, 4582, 2, 23664, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251316, 5624, 4582, 2, 23665, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251317, 2576, 4583, 5, 23943, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251318, 2576, 4583, 5, 23786, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251319, 2576, 4583, 5, 23924, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251320, 2576, 4583, 5, 23662, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251321, 2577, 4583, 5, 23629, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251322, 2577, 4583, 5, 23630, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251324, 2577, 4583, 5, 23645, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251325, 2577, 4583, 5, 23662, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251326, 2578, 4583, 5, 23951, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251327, 2578, 4583, 5, 23779, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251328, 2578, 4583, 5, 23785, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251329, 2579, 4583, 5, 23672, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251330, 2579, 4583, 5, 23659, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251331, 2580, 4583, 5, 23642, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251332, 2582, 4583, 5, 23950, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251333, 2582, 4583, 5, 23682, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251334, 2583, 4583, 5, 23957, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251335, 2583, 4583, 5, 23923, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251336, 2584, 4583, 5, 23780, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251337, 2584, 4583, 5, 23781, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251338, 2584, 4583, 5, 23664, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251339, 2585, 4583, 5, 23634, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251340, 2585, 4583, 5, 23657, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251341, 2585, 4583, 5, 23782, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251342, 2585, 4583, 5, 23788, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251343, 5625, 4584, 2, 23639, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251344, 5629, 4584, 2, 23652, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251345, 5630, 4584, 2, 23634, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251346, 5633, 4584, 2, 23653, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251347, 5634, 4584, 2, 23654, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251348, 5635, 4584, 2, 23655, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251349, 5636, 4584, 2, 23656, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251350, 5638, 4584, 2, 23818, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251351, 5639, 4584, 2, 23819, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251352, 5640, 4584, 2, 23943, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251353, 5641, 4584, 2, 23945, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251354, 5643, 4584, 2, 23950, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251355, 5644, 4584, 2, 23951, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251356, 5645, 4584, 2, 23641, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251357, 5647, 4584, 2, 23643, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251358, 5648, 4584, 2, 23952, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251359, 5650, 4584, 2, 23953, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251360, 5651, 4584, 2, 23955, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251361, 5652, 4584, 2, 23956, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251362, 5653, 4584, 2, 23957, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (251363, 5655, 4584, 2, 23659, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (262586, 2577, 4583, 5, 23625, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (262608, 8296, 4626, 6, 24055, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (262609, 8298, 4626, 6, 24056, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (262610, 8297, 4626, 6, 24056, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (262611, 8298, 4626, 6, 24057, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (262612, 8299, 4626, 6, 24057, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (262613, 8296, 4626, 6, 24058, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (262614, 8300, 4626, 6, 24058, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (262615, 7759, 4582, 2, 23627, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (278630, 2581, 4583, 5, 23655, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (278631, 2583, 4583, 5, 23655, 83, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (278632, 2817, 4649, 4, 24065, 128, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (278633, 10016, 4650, 2, 24065, 128, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (278634, 8305, 4651, 6, 24065, 128, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (278635, 2818, 4649, 4, 24066, 128, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (278636, 10017, 4650, 2, 24066, 128, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (278637, 8306, 4651, 6, 24066, 128, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (278638, 8307, 4651, 6, 24066, 128, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (278639, 2819, 4649, 4, 24067, 128, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (278640, 10016, 4650, 2, 24067, 128, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (278641, 8308, 4651, 6, 24067, 128, NULL, 1);
INSERT INTO `os_patent_field_patent_link` VALUES (278647, 2462, 4562, 5, 22745, 80, NULL, 1);

-- ----------------------------
-- Table structure for os_patent_field_text
-- ----------------------------
DROP TABLE IF EXISTS `os_patent_field_text`;
CREATE TABLE `os_patent_field_text`  (
  `id` int(0) UNSIGNED NOT NULL AUTO_INCREMENT COMMENT 'ID',
  `name` longtext CHARACTER SET utf8 COLLATE utf8_general_ci NULL COMMENT '文本内容',
  `cid` int(0) NULL DEFAULT NULL COMMENT '字段ID',
  PRIMARY KEY (`id`) USING BTREE,
  INDEX `id`(`id`) USING BTREE,
  INDEX `cid`(`cid`) USING BTREE
) ENGINE = InnoDB AUTO_INCREMENT = 10018 CHARACTER SET = utf8 COLLATE = utf8_general_ci COMMENT = '自定义字段文本关联表' ROW_FORMAT = Dynamic;

-- ----------------------------
-- Records of os_patent_field_text
-- ----------------------------
INSERT INTO `os_patent_field_text` VALUES (3111, '分离和提取稀土成分', 4565);
INSERT INTO `os_patent_field_text` VALUES (3112, '对于纳米复合磁体而言，很难以较低的成本高效地制备原始合金，包括较大体积百分比的非晶态结构。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3113, '提高矫顽力', 4565);
INSERT INTO `os_patent_field_text` VALUES (3114, '没有一种常规技术能够以高生产率将具有不均匀填充密度分布的粉末材料压实,同时使压块的破裂,碎裂或变形最小化。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3115, '延长在线锯装置中使用以水为主要成分冷却液进行切断时的线的寿命。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3116, '提高粉末的流动性、致密性和粘合剂可去除性', 4565);
INSERT INTO `os_patent_field_text` VALUES (3117, '在施加较低的磁化强度的情况下也可充分磁化', 4565);
INSERT INTO `os_patent_field_text` VALUES (3118, '提高耐腐蚀性，提高铜层的粘附力', 4565);
INSERT INTO `os_patent_field_text` VALUES (3119, '无论采用熔体旋压法和带材铸造法中的哪一种骤冷方法，都难以精密控制骤冷条件，再现性良好地制作具有期望的组织结构的骤冷合金，', 4565);
INSERT INTO `os_patent_field_text` VALUES (3120, '提高磁性', 4565);
INSERT INTO `os_patent_field_text` VALUES (3121, '将稀土合金烧结体的次品作为原料不进行再熔融而再利用', 4565);
INSERT INTO `os_patent_field_text` VALUES (3122, 'R-Fe-B系纳米复合磁铁块状磁铁还没有市售', 4565);
INSERT INTO `os_patent_field_text` VALUES (3123, '淬火凝固：RH大量存在于晶界中，若氢碎，这部分的RH被浪费，利用率低。而且晶界相中RH多会不利于烧结', 4565);
INSERT INTO `os_patent_field_text` VALUES (3124, '抑制氢碎过程的中的氧化，同时提高生产效率（气体流速过快使粉末不均匀，过慢效率低）', 4565);
INSERT INTO `os_patent_field_text` VALUES (3125, '减少损坏或变形的烧结体的数量，提高生产率。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3126, '为了提高旋转机的性能，仅增强磁铁的磁力是不够的，需要使磁铁的形状及磁铁表面附近的磁场分布符合设计。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3127, '稀土合金磁铁的烧结体非常硬且脆，而且加工负荷大，所以高精度的磨削加工是困难的作业，加工时间长', 4565);
INSERT INTO `os_patent_field_text` VALUES (3128, '在表面磁通密度的角度分布(轴周围)中，在边界部分附近产生极值，表面磁通密度变化的线性度降低', 4565);
INSERT INTO `os_patent_field_text` VALUES (3129, '在通过热处理形成树脂被膜过程中有机溶剂从被膜蒸发而在被膜上容易产生针孔这样的问题和涂液的成品率差这样的问题', 4565);
INSERT INTO `os_patent_field_text` VALUES (3130, '提高纳米复合磁体的磁性', 4565);
INSERT INTO `os_patent_field_text` VALUES (3131, '碱金属硅酸盐涂层以制冷剂或润滑油的存在下为使用环境下早期发生被膜的劣化', 4565);
INSERT INTO `os_patent_field_text` VALUES (3132, '通过简单的工艺以低成本的必要和充分的粘合性的稀土类磁铁形成耐腐蚀涂膜。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3133, '提高以急冷合金为原料制备的磁体的矫顽力', 4565);
INSERT INTO `os_patent_field_text` VALUES (3134, '施加脉冲磁场会导致涡流问题', 4565);
INSERT INTO `os_patent_field_text` VALUES (3135, '为了更有效地设计磁路并进一步减小其尺寸', 4565);
INSERT INTO `os_patent_field_text` VALUES (3136, '现有粉末流动及充型效果差', 4565);
INSERT INTO `os_patent_field_text` VALUES (3137, '氰化铜浴含有毒性，不能忽视对环境的影响', 4565);
INSERT INTO `os_patent_field_text` VALUES (3138, '无电解镀膜是通过将电镀液中的金属离子通过还原剂的作用还原并在镀层表面金属析出而形成的涂层，所以在与镀层的附着性较差的同时，在成膜效率方面也较差。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3139, '提高耐蚀膜的耐热性和粘合性', 4565);
INSERT INTO `os_patent_field_text` VALUES (3140, '提高高温矫顽力，而不破坏硬磁相', 4565);
INSERT INTO `os_patent_field_text` VALUES (3141, '如果粘结磁体在磁化过程中保持磁化状态，由于磁体的磁滞特性，磁体很难磁化。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3142, '用带材铸造法得到的合金铸块，虽然实质上不含有α-Fe相，具有均质的组织，但由于晶粒的尺寸过小，所以在粘结磁铁中使用的粉末粒度中各粉末粒子的磁各向异性低', 4565);
INSERT INTO `os_patent_field_text` VALUES (3143, '减少了由于切割和研磨而产生的边缘材料的量。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3144, '提高严酷环境下的耐蚀性', 4565);
INSERT INTO `os_patent_field_text` VALUES (3145, '增加主相中Dy等重金属元素的浓度，提高矫顽力', 4565);
INSERT INTO `os_patent_field_text` VALUES (3146, '切割时使用油性冷却液污染环境且废弃物不容易分离，使用水作为冷却液可以解决前述问题，但是容易引起线锯的断裂', 4565);
INSERT INTO `os_patent_field_text` VALUES (3147, '减少重金属，增加矫顽力', 4565);
INSERT INTO `os_patent_field_text` VALUES (3148, '一种非常各向异性的环形磁体，磁极之间间隔的偏差较小，齿形转矩小，且价格便宜', 4565);
INSERT INTO `os_patent_field_text` VALUES (3149, '提高含有细磁粉（6μm或更小）的烧结体的磁均匀性', 4565);
INSERT INTO `os_patent_field_text` VALUES (3150, '现有技术中，碱硅酸盐涂层来冷媒和润滑油提高磁体的耐腐蚀性，防止硅酸盐涂层的劣化，提高其耐腐蚀性是必要的', 4565);
INSERT INTO `os_patent_field_text` VALUES (3151, '提高耐腐蚀性和烧结性', 4565);
INSERT INTO `os_patent_field_text` VALUES (3152, '添加的C易于在晶界上与Nd等稀土类元素R结合，从而导致烧结性能降低的问题。Cr的添加量足以充分提高耐蚀性的情况下，会降低磁体的剩磁密度Br，结果就导致最大磁能积(BH)max也降低的问题', 4565);
INSERT INTO `os_patent_field_text` VALUES (3153, '温度高时膜层软化，绝缘层发生破坏', 4565);
INSERT INTO `os_patent_field_text` VALUES (3154, '淬火不足，磁性降低', 4565);
INSERT INTO `os_patent_field_text` VALUES (3155, '提高剩余磁通密度，以满足小型、轻量化、高功能化的电气、电子设备的需求', 4565);
INSERT INTO `os_patent_field_text` VALUES (3156, '提高耐腐蚀性', 4565);
INSERT INTO `os_patent_field_text` VALUES (3157, '提高抗氧化性', 4565);
INSERT INTO `os_patent_field_text` VALUES (3158, '提高磁体的粉末的取向程度而采用脉冲磁场压制，但是会产生涡流', 4565);
INSERT INTO `os_patent_field_text` VALUES (3159, '即使通过辐射照射也不易衰减的粒子线加速器的永久磁铁和磁场产生装置。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3160, '减少B相，增加主相，增加剩余磁通量密度', 4565);
INSERT INTO `os_patent_field_text` VALUES (3161, '在烧结过程中抑制碳化', 4565);
INSERT INTO `os_patent_field_text` VALUES (3162, '均匀地还原烧结体中的氧并显着提高脱氧能力。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3163, '增加合金粉末的填充性能，且不包含倾斜晶体', 4565);
INSERT INTO `os_patent_field_text` VALUES (3164, '提高粉末的流动性和可成形性。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3165, 'HDDR磁粉制备方法；具有优异的磁性能的抗氧化的HDDR磁体粉末的新方法', 4565);
INSERT INTO `os_patent_field_text` VALUES (3166, '改善镀镍涂层的润湿性', 4565);
INSERT INTO `os_patent_field_text` VALUES (3167, '烧结成型前进行切割的方法，切割后将成形体分离时，易造成成形体的裂纹和欠缺', 4565);
INSERT INTO `os_patent_field_text` VALUES (3168, '提高耐腐蚀性，确保优异的粘合性，抑制点蚀的形成', 4565);
INSERT INTO `os_patent_field_text` VALUES (3169, '消除或引起矫顽力下降的定向紊乱和作为原料的微粉末飞散，制备各向异性磁体', 4565);
INSERT INTO `os_patent_field_text` VALUES (3170, '减少B用量，增加主相体积比，增加剩余磁通密度', 4565);
INSERT INTO `os_patent_field_text` VALUES (3171, '提供一种电机用的高磁性能烧结磁体', 4565);
INSERT INTO `os_patent_field_text` VALUES (3172, '希望进一步地通过对合金组织的控制来实现永久磁铁的高磁特性化', 4565);
INSERT INTO `os_patent_field_text` VALUES (3173, '电机用磁体转子，降低成本，提高耐腐蚀性', 4565);
INSERT INTO `os_patent_field_text` VALUES (3174, '在大尺寸的磁铁的表面采用气相沉积法镀膜时，由于磁石的破损或者被膜的破坏，都会导致产品恶化。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3175, '提高磁体取向度', 4565);
INSERT INTO `os_patent_field_text` VALUES (3176, '抑制铝及其合金膜的凸起物的生成及损害', 4565);
INSERT INTO `os_patent_field_text` VALUES (3177, '提高耐氢性', 4565);
INSERT INTO `os_patent_field_text` VALUES (3178, '提高高绝缘性，具有优异的涡电流减少的效果，同时具有高的磁特性', 4565);
INSERT INTO `os_patent_field_text` VALUES (3179, '制作模拟器和半导体制造装置等用的线性马达的磁石，现有技术不能达到磁铁内易磁化轴方向均匀性的要求，步骤复杂，设备大。且需要使用专门的模具', 4565);
INSERT INTO `os_patent_field_text` VALUES (3180, '提高添加Al或者Cu使的矫顽力和残余磁通密度', 4565);
INSERT INTO `os_patent_field_text` VALUES (3181, '在磁铁表面电镀一层密着性好的铜膜', 4565);
INSERT INTO `os_patent_field_text` VALUES (3182, '提高HDDR（氢化）粉末的磁性能和耐腐蚀性', 4565);
INSERT INTO `os_patent_field_text` VALUES (3183, '提高矫顽力和剩磁', 4565);
INSERT INTO `os_patent_field_text` VALUES (3184, '制作一种高取向度的磁体，没有内部缺陷或低密度区域的形成或形状畸变', 4565);
INSERT INTO `os_patent_field_text` VALUES (3185, '现有技术，为了减少合金中的氧含量，在压型环节浸入抗氧剂，但是会引入气泡，使成型体产生破裂；由于成型体密度不均，抗氧剂会从密度低的地方向外溢出，产生气泡，引起成型体破裂；着火风险', 4565);
INSERT INTO `os_patent_field_text` VALUES (3186, '在作为软磁相的α-Fe中添加Ti以提高矫顽力，无法同时实现高矫顽力和剩磁', 4565);
INSERT INTO `os_patent_field_text` VALUES (3187, '现有技术中，为了消泡，线锯切割的加工液中有硼，有环境污染', 4565);
INSERT INTO `os_patent_field_text` VALUES (3188, '在烧结体表面追加重金属元素的现有技术存在矫顽力不足', 4565);
INSERT INTO `os_patent_field_text` VALUES (3189, '、耐候性差、资源浪费等多种问题', 4565);
INSERT INTO `os_patent_field_text` VALUES (3190, '对于采用砥粒固着线锯来切割成型体的方法，存在线锯堵塞及切割面磁粉附着的问题', 4565);
INSERT INTO `os_patent_field_text` VALUES (3191, '从表面向内部扩散的金属元素的扩散范围被限定于磁铁的表面附近。因此，对厚度3mm以上的磁铁，矫顽力提高效果较小。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3192, '提高含Dy磁体的矫顽力', 4565);
INSERT INTO `os_patent_field_text` VALUES (3193, '抑制劣化的同时提高矫顽力。剩余磁通密度，并提高耐腐蚀性', 4565);
INSERT INTO `os_patent_field_text` VALUES (3194, '添加Al或Cu会提高矫顽力，但存在剩余磁通密度降低的问题。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3195, '简化脱气和密封的工作内容', 4565);
INSERT INTO `os_patent_field_text` VALUES (3196, '烧结用夹具，可承受重复使用', 4565);
INSERT INTO `os_patent_field_text` VALUES (3197, '抑制表面特性劣化', 4565);
INSERT INTO `os_patent_field_text` VALUES (3198, '解决附着性降低', 4565);
INSERT INTO `os_patent_field_text` VALUES (3199, '磁铁的表面因高热而与Al反应并变质，从而磁特性劣化。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3200, '存在滚筒处理时倒角面及其附近沿着长研磨痕容易严重缺损的问题。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3201, '在储氢时的反应热没有被正确处理，氢粉碎的效率低', 4565);
INSERT INTO `os_patent_field_text` VALUES (3202, '在现有技术的基础上进行改善：提高矫顽力；提高表面层牢度、均匀性，有优良防腐性', 4565);
INSERT INTO `os_patent_field_text` VALUES (3203, '稀土类金属也无法避免地扩散到主相中，残留磁通密度Br降低。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3204, '使用廉价且易于加工且不会发生脆化的模具，制备无0弯曲或变形的磁体', 4565);
INSERT INTO `os_patent_field_text` VALUES (3205, '在Al涂层的表面上形成化学转化涂层,并且堆叠金属氧化物膜，但仍然存在耐盐性不足的问题', 4565);
INSERT INTO `os_patent_field_text` VALUES (3206, '将重稀土元素从烧结磁体表面分散到内部，BR和矩形比（H ķ/ H J）不可避免地降低', 4565);
INSERT INTO `os_patent_field_text` VALUES (3207, '现有SC法使磁场中的取向变得困难，取向度有时低', 4565);
INSERT INTO `os_patent_field_text` VALUES (3208, '提供一种可以考虑不完全磁化区域的磁化状态的磁化分析方法，在进行分析的同时高精度地进行磁化分析。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3209, '用有机羧酸对镀Ni表面进行酸洗的技术作为恢复Ni镀膜的粘附性的方法是极好的，但在耐湿性试验中，则接合强度降低。特别是在使用有机硅系粘合剂作为粘合剂的情况下，该降低变得显着。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3210, '提高矫顽力和角型性', 4565);
INSERT INTO `os_patent_field_text` VALUES (3211, '提高矫顽力和磁化曲线的角型性', 4565);
INSERT INTO `os_patent_field_text` VALUES (3212, '接合所使用的粘合剂多，则会因粘合剂造成磁性不连续的层的形成', 4565);
INSERT INTO `os_patent_field_text` VALUES (3213, '降低成本，提高矫顽力，降低矫顽力偏差', 4565);
INSERT INTO `os_patent_field_text` VALUES (3214, '磁铁和被膜之间的由热循环试验所引起的对受热历程的行为的差异而在两者的界面产生的变形及应力。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3215, '把Ni镀膜的表面用有机羧酸进行酸洗的技术作为使Ni镀膜粘接性恢复的方法是优良的。但在耐湿性试验环境下放置时，粘接强度降低。特别是作为粘接剂采用硅酮类粘接剂时，该强度降低变得显著。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3216, '在将磁粉的取向非常紊乱的环状磁铁作为电动机的转子使用时，着磁后的表面磁通密度波形紊乱，故齿槽转矩恶化。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3217, '现有厚度3mm以上的磁铁内部产生大的矫顽力差', 4565);
INSERT INTO `os_patent_field_text` VALUES (3218, '平板磁体和弓形板磁体的生产率、制造具有高定向度的环形磁体。制造具有圆形或异形横截面的长尺产品烧结体和尺寸小于1mm的烧结体', 4565);
INSERT INTO `os_patent_field_text` VALUES (3219, '减少重金属，提高矫顽力', 4565);
INSERT INTO `os_patent_field_text` VALUES (3220, '不进行涂层处理但耐腐蚀', 4565);
INSERT INTO `os_patent_field_text` VALUES (3221, '防止定向过程中泄露磁场的影响', 4565);
INSERT INTO `os_patent_field_text` VALUES (3222, '当重稀土元素RH从烧结体表面扩散到烧结体内部时，原本烧结体中含有的以轻稀土元素RL为主体的液相成分相互扩散到磁体表面，从而在磁体表面形成包括重稀土元素RH或轻稀土元素RL金属的薄层。该层与支持R-FFe-B系稀土烧结磁体的支承部件发生反应，R-FFe-B系稀土烧结磁体和治具牢固粘合（以下称为“熔敷”', 4565);
INSERT INTO `os_patent_field_text` VALUES (3223, '湿度变化环境中，提高耐腐性。抑制氧化热处理引起的磁性降低', 4565);
INSERT INTO `os_patent_field_text` VALUES (3224, '进一步改善在盐抗性', 4565);
INSERT INTO `os_patent_field_text` VALUES (3225, '条带铸造方法厚度的变化大', 4565);
INSERT INTO `os_patent_field_text` VALUES (3226, '使用有机分散剂（制粉用）的情况下，提高磁性', 4565);
INSERT INTO `os_patent_field_text` VALUES (3227, '提供一种有效地防止通过机械加工用于基于R-Fe-B烧结磁体中产生的解粒的方法', 4565);
INSERT INTO `os_patent_field_text` VALUES (3228, 'IPM电动机等磁铁是当磁铁嵌入部件中使用时，并不总是需要在磁铁表面形成这样的耐腐蚀涂层。但是，从制造磁铁到嵌入部件的这段时间，自然需要确保磁铁的耐腐蚀性。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3229, '现有AL膜存在耐盐水性不充分的问题', 4565);
INSERT INTO `os_patent_field_text` VALUES (3230, '抑制烧结体的变形，及裂缝产生', 4565);
INSERT INTO `os_patent_field_text` VALUES (3231, '在以La为主要稀土元素的稀土永磁体中，减少了B的量，增加了主相的比例，磁体具有较高的剩余磁通密度和饱和度', 4565);
INSERT INTO `os_patent_field_text` VALUES (3232, 'cu可用来消除主相壳的微缺陷，但Cu的添加量受到约束', 4565);
INSERT INTO `os_patent_field_text` VALUES (3233, '磁体表面上形成磷酸盐涂层的方法,是一种简单的防锈方法,用于对磁体进行简单必要的耐腐蚀性。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3234, '对磁铁赋予更优良耐腐蚀性且当采用粘接剂对磁铁进行部件组装时，希望即使在苛刻条件下仍与粘接对象之间保持优良的粘接强度。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3235, '改善HDDR磁粉的矫顽力', 4565);
INSERT INTO `os_patent_field_text` VALUES (3236, '提高HDDR磁粉的矫顽力', 4565);
INSERT INTO `os_patent_field_text` VALUES (3237, 'Al涂层在恶劣条件下耐腐蚀性不够', 4565);
INSERT INTO `os_patent_field_text` VALUES (3238, '不需要耐腐蚀膜的情况下保持耐腐蚀性', 4565);
INSERT INTO `os_patent_field_text` VALUES (3239, '抑制残留磁通密度降低，提高矫顽力', 4565);
INSERT INTO `os_patent_field_text` VALUES (3240, '抑制支撑构件和烧结磁体在RH扩散期间的粘结。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3241, '即使添加少量的重稀土元素也能够提高矫顽力，并抑制剩余磁通密度的降低。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3242, '磁体致密度', 4565);
INSERT INTO `os_patent_field_text` VALUES (3243, '磁铁与铝涂层之间的粘附较小', 4565);
INSERT INTO `os_patent_field_text` VALUES (3244, '提高耐腐蚀性,即使在温度和湿度由于氧化热处理而波动的环境中,抑制磁性特性的降低,', 4565);
INSERT INTO `os_patent_field_text` VALUES (3245, '储氢所需的时间很长', 4565);
INSERT INTO `os_patent_field_text` VALUES (3246, '晶体扩散工艺中，将RH粉末已规定的厚度和图案均匀地涂覆在磁体表面', 4565);
INSERT INTO `os_patent_field_text` VALUES (3247, '防止粗粉末氧化', 4565);
INSERT INTO `os_patent_field_text` VALUES (3248, '利用少量的重稀土元素RH，在烧结磁体表面整体上均匀地扩散重稀土元素RH', 4565);
INSERT INTO `os_patent_field_text` VALUES (3249, '即使厚度5mm以上的磁体，也具有高的矫顽力HcJ，并且具有高最大能量积和角型比', 4565);
INSERT INTO `os_patent_field_text` VALUES (3250, '重金属扩散过程，抑制残留磁通密度降低', 4565);
INSERT INTO `os_patent_field_text` VALUES (3251, '防锈', 4565);
INSERT INTO `os_patent_field_text` VALUES (3252, '最初存在于磁铁表面附近的RL和RH的扩散和引入，该含R层存在于已经从磁铁内部向表面扩散和引入的RL和RH的表面附近，易腐蚀', 4565);
INSERT INTO `os_patent_field_text` VALUES (3253, '研究具有比常规化学转化涂层例如磷酸盐涂层更高的耐腐蚀性的化学转化涂层。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3254, '表面直接形成化学转化覆膜的方法，迄今未走出简易防锈法的范围，在容易导致腐蚀的环境下，容易引起磁粉的脱落或由外部应力造成的磁铁的破裂', 4565);
INSERT INTO `os_patent_field_text` VALUES (3255, '不涂覆涂层提高耐腐蚀性', 4565);
INSERT INTO `os_patent_field_text` VALUES (3256, '利用重稀土替换一部分R，磁通密度降低', 4565);
INSERT INTO `os_patent_field_text` VALUES (3257, '在不降低残留磁通密度的情况下将Dy和Tb的重稀土元素RH从烧结磁体的表面扩散到内部。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3258, '操作多个氢研磨装置导致制造成本的增加,并且存在制造线复杂的问题', 4565);
INSERT INTO `os_patent_field_text` VALUES (3259, '大规模生产基于ND-Fe-B基永磁体薄膜,需要开发合金靶标', 4565);
INSERT INTO `os_patent_field_text` VALUES (3260, '削减支撑体与RH供给源或R-T-B系烧结磁体的接触面积', 4565);
INSERT INTO `os_patent_field_text` VALUES (3261, '烧结磁石与支撑件不溶接，增加每一次的处理量，提高生产效率，防止由于杂质气体引起的R-T-B系烧结磁体的磁性降低和重稀土元素RH的扩散而导致的R-T-B系烧结磁体的磁性提高效果受到阻碍。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3262, '温度和湿度波动的环境中也具有极优异的耐腐蚀性', 4565);
INSERT INTO `os_patent_field_text` VALUES (3263, '烧结磁石与支撑件不溶接，增加每一次的处理量，提高RH的扩散率', 4565);
INSERT INTO `os_patent_field_text` VALUES (3264, '稳定地从表面扩散重稀土类元素', 4565);
INSERT INTO `os_patent_field_text` VALUES (3265, '以一次的涂布量使重稀土类元素RH从烧结磁体表面扩散，对于矫顽磁力提高的效果也存在界限。为了实现高的矫顽磁力提高效果，需要重复涂布上述浆料。，稳定地从表面扩散重稀土类元素', 4565);
INSERT INTO `os_patent_field_text` VALUES (3266, '形成具有优异的粘合性优异的电镀镀膜。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3267, '具有优异粘合性并在表面上具有镀膜的R-Fe-B基烧结磁体', 4565);
INSERT INTO `os_patent_field_text` VALUES (3268, '减少所得RTB的烧结磁体中所含的氧气量来提高磁体特性,从而在氢破和粗粉后降低所得RTB的烧结磁体中所含的氧量。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3269, '被处理物向该表面处理支架的取入需要利用保持器的弹簧性使保持器的长度方向弯曲，扩大线状部件和线状部件的间隙从那里进行，所以作业很麻烦。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3270, '2合金法中，在烧结时防止由于密度不足而导致磁性降低，在不降低Br的情况下提高HcJ。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3271, '计算重稀土元素在内部扩散并从表面引入的磁体内的矫顽力的分布,以及磁体内的磁力特性', 4565);
INSERT INTO `os_patent_field_text` VALUES (3272, '扩散速度慢，过度摄入而导致Br降低', 4565);
INSERT INTO `os_patent_field_text` VALUES (3273, '除去电镀镍溶液中的稀土杂质', 4565);
INSERT INTO `os_patent_field_text` VALUES (3274, '含Dy的稀土磁体生产率低', 4565);
INSERT INTO `os_patent_field_text` VALUES (3275, '可以减少R-T-B烧结磁体材料的缺失，减少均匀搅拌时间，以防止磁性偏差。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3276, '提高矫顽力和角型性，抑制最大磁能积的降低', 4565);
INSERT INTO `os_patent_field_text` VALUES (3277, '高温下，提高矫顽力', 4565);
INSERT INTO `os_patent_field_text` VALUES (3278, '在短时间内将重稀土元素RH扩散到R-B烧结磁体内，并且可以在不降低Br的情况下改进HcJ。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3279, 'R-T-B系烧结磁铁存在高温时HcJ降低，引起不可逆热退磁的问题。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3280, '在这些常规方法中加入RH和Al时,高温Br有些问题可能会降级', 4565);
INSERT INTO `os_patent_field_text` VALUES (3281, '在处理多量的R－T－B系烧结磁体时，存在不能使一次的处理量增加的问题。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3282, '减少高温环境下不可逆减磁和发热的发生', 4565);
INSERT INTO `os_patent_field_text` VALUES (3283, '如果晶种添加量不足，则无法获得共沉淀效果，而如果晶种添加量过多，则搅拌器的能量消耗增加，过滤沉淀物所需的时间增加。此外，即使严格控制种晶的量，也难以稳定地生成重稀土元素的共沉淀物，', 4565);
INSERT INTO `os_patent_field_text` VALUES (3284, '抑制变形，减少磁性偏差', 4565);
INSERT INTO `os_patent_field_text` VALUES (3285, '一种长条或者大型磁体的制作方法，磁性特性均匀且具有高磁特性；一种制造稀土烧结磁体的方法，该方法在磁场施加方向上尺寸大，并且在与磁场施加方向正交的方向上截面形状复杂。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3286, '1.晶界扩散法：提高矫顽力。2.不使用晶界扩散也有高矫顽力', 4565);
INSERT INTO `os_patent_field_text` VALUES (3287, '在大磁场中能够稳定成形体而不易单重偏差', 4565);
INSERT INTO `os_patent_field_text` VALUES (3288, '提高矫顽力，减小粒径，提高着磁性', 4565);
INSERT INTO `os_patent_field_text` VALUES (3289, '在成形体表面覆盖了油剂后，防止模制体因油剂而滑动成形体之间碰撞而在模制体上产生缺陷，减少烧结时用于除去油剂处理的时间', 4565);
INSERT INTO `os_patent_field_text` VALUES (3290, 'RH难以扩散到磁体表面部分的表面层部分的主相晶的中心部分', 4565);
INSERT INTO `os_patent_field_text` VALUES (3291, '从磁体中分离稀土元素，磁体组分中应含有两组稀土元素组', 4565);
INSERT INTO `os_patent_field_text` VALUES (3292, '可以减少添加的RH的量', 4565);
INSERT INTO `os_patent_field_text` VALUES (3293, '用接近均匀填充密度的粉末填充容器的粉末填充装置', 4565);
INSERT INTO `os_patent_field_text` VALUES (3294, '改善使用压制法制造的烧结磁体的变形', 4565);
INSERT INTO `os_patent_field_text` VALUES (3295, '减少包含氢碎工艺生产的磁体的裂纹', 4565);
INSERT INTO `os_patent_field_text` VALUES (3296, '平均粒径在1um以下粒径分布大致均匀的烧结体，提高取向度', 4565);
INSERT INTO `os_patent_field_text` VALUES (3297, '提高用于晶界扩散处理的涂布物的附着性，从而提高矫顽力。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3298, '使用晶界扩散法制造的具有高磁性能的RFeB基烧结磁体，具有耐腐蚀性和低能量损失', 4565);
INSERT INTO `os_patent_field_text` VALUES (3299, '高效地对烧结体的角和边缘进行倒角', 4565);
INSERT INTO `os_patent_field_text` VALUES (3300, '将稀土元素与铁族元素分离原理：稀土元素氧化，铁或者铁的氧化物与碳合金化沉淀。后者过程中碳坩埚需供给碳。是消耗品；另外，即使在非碳容器中，两种块体会粘附在容器内壁，也为消耗品。有成本问题。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3301, '提高PLP法（无压工艺，Press-less process）的生产率', 4565);
INSERT INTO `os_patent_field_text` VALUES (3302, '主相的存在比率变低、Br大幅降低', 4565);
INSERT INTO `os_patent_field_text` VALUES (3303, '当从枪管和干燥器中除去时,可能发生碎裂或裂缝', 4565);
INSERT INTO `os_patent_field_text` VALUES (3304, '在下一个工程是机械加工的情况下，如果磁铁片上附着大量的加工粉，加工精度会因加工粉而降低，加工机的污垢会增加，从而导致加工机故障。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3305, '准确度较低', 4565);
INSERT INTO `os_patent_field_text` VALUES (3306, '在磁场中压缩成形的成形体需在模具内脱磁后取出，但是难以做到完全脱磁。剩余的磁粉会：1.烧结变形 2.磨削加工机发生堵塞故障 3.烧好之后难以去除，尺寸不良', 4565);
INSERT INTO `os_patent_field_text` VALUES (3307, 'B量变化（0.01%），矫顽力会有很大的变化，且实际生产时B量不好精确称量', 4565);
INSERT INTO `os_patent_field_text` VALUES (3308, '磁体加工过程中使用了有机润滑油，使得磁体碎屑和磁体污泥中含有碳，碳会破坏再生品的磁性，所以要去除', 4565);
INSERT INTO `os_patent_field_text` VALUES (3309, '1.现有技术微粉末有钝角，取向度不高', 4565);
INSERT INTO `os_patent_field_text` VALUES (3310, '2.微粉末粉碎后热处理，工序复杂', 4565);
INSERT INTO `os_patent_field_text` VALUES (3311, '1.当产生磁粉的圆柱形模制品时,不能设置磁场发生器以施加平行于圆柱形状的中心轴的定向磁场。2.粉末不能均匀供给。3.裂缝 4.能制作平行于圆柱形状的中心轴的磁场方向的圆柱形成型体。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3312, '在碳存在下对含有稀土和铁的氧化物进行处理（JP6413877B2），工序繁琐', 4565);
INSERT INTO `os_patent_field_text` VALUES (3313, '尽可能不用重稀土元素RH，同时提高Hk/HcJ', 4565);
INSERT INTO `os_patent_field_text` VALUES (3314, '使用RH氧化物的效果是轻微的,并且RM合金的RH氧化物的还原效果不是非常展示的。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3315, '采用破碎降低矫顽力和耐候性偏差，提高矫顽力和耐候性', 4565);
INSERT INTO `os_patent_field_text` VALUES (3316, '减少RH的含量,同时高H.cJ和高H.k/ HcJ', 4565);
INSERT INTO `os_patent_field_text` VALUES (3317, '一种自动检查方法，可以对烧结片有无缺口进行高精度和/或短时间的判定。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3318, '提高HcJ', 4565);
INSERT INTO `os_patent_field_text` VALUES (3319, '不将模具搬入烧结炉中的PLP（无压工艺）方法，降低制造费用', 4565);
INSERT INTO `os_patent_field_text` VALUES (3320, '现有倒角工艺，不能有效地将大量的烧结磁铁片倒角', 4565);
INSERT INTO `os_patent_field_text` VALUES (3321, 'HDDR处理用于制备烧结型磁体，制造具有高矫顽力的RFB烧结磁体', 4565);
INSERT INTO `os_patent_field_text` VALUES (3322, '粘合磁铁在高温高湿条件下磁特性下降，在成型体表面涂覆防锈层不能充分满足要求', 4565);
INSERT INTO `os_patent_field_text` VALUES (3323, '添加了镓的磁体中，硼少量变化，则会导致矫顽力发生较大变化，且在实际生产中，不好精准地控制硼的加入量', 4565);
INSERT INTO `os_patent_field_text` VALUES (3324, '在通常的磁体的制造工序中，由于为了调整磁体尺寸而进行的表面研削等，其高矫顽力化的部分被除去时，存在矫顽力提高效果大幅受损这样的问题。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3325, '磁石内外矫顽力差异大，采用磨削表面的方式来解决，但是会破坏高矫顽力', 4565);
INSERT INTO `os_patent_field_text` VALUES (3326, '磁石制备的新方法', 4565);
INSERT INTO `os_patent_field_text` VALUES (3327, '现有涂敷方法不能使扩散源均匀的分布的磁体表面', 4565);
INSERT INTO `os_patent_field_text` VALUES (3328, '涂敷层出现脱落', 4565);
INSERT INTO `os_patent_field_text` VALUES (3329, '无论是喷涂法还浸渍法，浆料不能在磁体表面均匀分布，使得Hcj分布不均', 4565);
INSERT INTO `os_patent_field_text` VALUES (3330, '现有扩散虽然能够抑制Br的降低，但能够比较容易地提高HcJ，但HcJ的提高幅度变动，无法得到稳定且高的HcJ。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3331, '具有高HcJ和高Hk/HcJ的R-T-B烧结磁体，同时降低RH的含量。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3332, '从含有轻稀土元素和重稀土元素的处理对象物中溶解重稀土元素的方法，作为溶剂提取方法的替代技术。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3333, '电机生产，产率高，尺寸精度低', 4565);
INSERT INTO `os_patent_field_text` VALUES (3334, '研磨或磨削的粉末，粒径分布会影响磁性；研磨或磨削中粉末会粘结，也会影响磁性。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3335, '即使在粘结磁体的制造过程中将其加热到高温或者用作粘结磁体，也可以抑制加热后室温下矫顽力的降低。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3336, '抑制加热后室温下矫顽力的降低。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3337, '即使在粘结磁体的制造过程中或用作粘结磁体的过程中加热至高温,也能够抑制加热后室温下矫顽力的降低。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3338, '从含有铝的钕铁硼中，分离铝和稀土元素', 4565);
INSERT INTO `os_patent_field_text` VALUES (3339, '废料回收中，分离轻稀土元素和重稀土元素的方法溶剂萃取法使用2-乙基己基膦酸单-2-乙基己基酯等有机磷化合物作为萃取剂,煤油等高度易燃的有机溶剂，不环保', 4565);
INSERT INTO `os_patent_field_text` VALUES (3340, '中间元素在烧结磁体内不充分扩散', 4565);
INSERT INTO `os_patent_field_text` VALUES (3341, '提高磁体的表面附近的矫顽力,但磁铁内的矫顽力几乎没有难以改善', 4565);
INSERT INTO `os_patent_field_text` VALUES (3342, '具有小型且长条的形状在扩散工艺中特别容易发生缺损', 4565);
INSERT INTO `os_patent_field_text` VALUES (3343, '制备稀土过渡金属合金的常规方法不能消除局部晶粒长大,并且在粉碎过程中,磁体合金粉末的晶体使逆磁区的芯的磁性能劣化。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3344, '废料回收溶剂萃取法中，萃取剂量大，设备大，需根据轻稀土元素和重稀土元素的比例来设置处理条件，工作量大。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3345, '用喷涂方法时，存在重稀土元素RH的问题是浪费了稀有资源。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3346, '无法利用存在于磁体表面的RH来有效提高HcJ', 4565);
INSERT INTO `os_patent_field_text` VALUES (3347, '现有技术减少重稀土含量的同时矫顽力会降低', 4565);
INSERT INTO `os_patent_field_text` VALUES (3348, '使用有毒的氟酸和氟化氢铵，生产性有问题，难以降低成本。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3349, '希望RH扩散源兼具降低成本和提高HcJ的效果', 4565);
INSERT INTO `os_patent_field_text` VALUES (3350, '但是，在浸渍引法中，由于重力的作用，浆糊会偏向磁铁的下部。另外，在喷涂法中，由于表面张力，磁铁端部的涂敷厚度变厚。无论哪种方法都很难使R化合物均匀地存在于磁体表面上。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3351, '', 4565);
INSERT INTO `os_patent_field_text` VALUES (3352, '采用了喷雾涂敷法的情况下，喷雾涂敷装置的内壁面也被涂抹了浆料，浆料的利用率变低，浪费稀有资源重稀土元素RH。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3353, '制备稀土元素溶液的方（溶剂萃取方法提取稀土元素', 4565);
INSERT INTO `os_patent_field_text` VALUES (3354, '）', 4565);
INSERT INTO `os_patent_field_text` VALUES (3355, '提高固有矫顽力和耐腐蚀性', 4565);
INSERT INTO `os_patent_field_text` VALUES (3356, '在主相中央扩散的RH几乎没有促进H cJ的提高', 4565);
INSERT INTO `os_patent_field_text` VALUES (3357, '无重稀土条件下，在磁体表面和内部同时提高矫顽力', 4565);
INSERT INTO `os_patent_field_text` VALUES (3358, '不使用溶剂萃取方法的情况下,提供一种用于从含有Dy和Tb的合金冲分离Dy和Tb的方法', 4565);
INSERT INTO `os_patent_field_text` VALUES (3359, '无论采用哪种方法,都难以使RH化合物均匀地存在于磁铁表面。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3360, '如果要在外部旋转中使用的内径侧制作产生主磁通量的极各向异性环形磁铁，则需要在内径侧配置产生定向磁场的磁轭和线圈，会存在线圈引出线的处理方法和发热对策等问题。而且，多极化的话，碘的tens会变窄，也会产生模具强度的问题。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3361, '现有涂布不均匀，高温下退磁', 4565);
INSERT INTO `os_patent_field_text` VALUES (3362, '提高HcJ和Br', 4565);
INSERT INTO `os_patent_field_text` VALUES (3363, '抑制高温环境下的矫顽力的降低。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3364, '含碳废弃物氧化处理时，会产生二氧化碳', 4565);
INSERT INTO `os_patent_field_text` VALUES (3365, '减少重稀土扩散源使用量，同时具有高矫顽力', 4565);
INSERT INTO `os_patent_field_text` VALUES (3366, '使Dy和Tb中的至少一个更均匀地扩散', 4565);
INSERT INTO `os_patent_field_text` VALUES (3367, '烧结磁体在高温下矫顽力下降', 4565);
INSERT INTO `os_patent_field_text` VALUES (3368, 'R-T-B烧结磁体在高温下会降低矫顽力HcJ，导致热减磁；且重稀土元素价格、供应不稳定', 4565);
INSERT INTO `os_patent_field_text` VALUES (3369, '更高HcJ,更少重稀土', 4565);
INSERT INTO `os_patent_field_text` VALUES (3370, '晶体结构热环境下不稳定的问题', 4565);
INSERT INTO `os_patent_field_text` VALUES (3371, '高温下烧结磁体的矫顽力下降', 4565);
INSERT INTO `os_patent_field_text` VALUES (3372, 'R-T-B的烧结磁体在高温下矫顽力降低', 4565);
INSERT INTO `os_patent_field_text` VALUES (3373, '高温下磁体的矫顽力不稳定', 4565);
INSERT INTO `os_patent_field_text` VALUES (3374, 'RT12具有高磁化强度，但存在晶体结构热不稳定的问题', 4565);
INSERT INTO `os_patent_field_text` VALUES (3375, '处理回收含硼的稀土元素', 4565);
INSERT INTO `os_patent_field_text` VALUES (3376, '合金粉末表面容易被氧化；使用盐酸和醋酸清洗时，局部高浓度的酸会腐蚀合金表面', 4565);
INSERT INTO `os_patent_field_text` VALUES (3377, '在不降低磁性的情况下抑制金属积累的产生，并且粉末不易燃烧，并且易于处理。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3378, '通过气体雾化法和水雾化法时，水滴冷却速度会影响金属粉末的品质', 4565);
INSERT INTO `os_patent_field_text` VALUES (3379, '高温下磁体易退磁', 4565);
INSERT INTO `os_patent_field_text` VALUES (3380, '高温下磁体矫顽力不稳定导致热退磁', 4565);
INSERT INTO `os_patent_field_text` VALUES (3381, '高温下磁性不稳定', 4565);
INSERT INTO `os_patent_field_text` VALUES (3382, '高温下磁体磁性不稳定', 4565);
INSERT INTO `os_patent_field_text` VALUES (3383, '难以提高Hk/HcJ的问题', 4565);
INSERT INTO `os_patent_field_text` VALUES (3384, '提供一种回收镓的方法,同时抑制来自待处理物体的钴的混合。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3385, '由于负压部分的发生,喷射集体流可以发生摆动和湍流。结果,熔融金属的粉碎变得不稳定,并且形成的金属粉末的粒度分布劣化,并且可能无法获得所需的粒度分布。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3386, '降低重稀土元素的使用量，高结合强度', 4565);
INSERT INTO `os_patent_field_text` VALUES (3387, '通过倾析除（水洗）去副产物的方法存在所得磁铁粉末的收率降低且制造成本增加。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3388, '常规的旋风分离器不适合比重相对较大的颗粒', 4565);
INSERT INTO `os_patent_field_text` VALUES (3389, '抑制生锈的产生', 4565);
INSERT INTO `os_patent_field_text` VALUES (3390, '通过在非常窄的特定温度下对含有La的R2、Ga及含有Cu的合金进行热处理并使其向上述特定组成的烧结体扩散，能够实现高Br和高HcJ', 4565);
INSERT INTO `os_patent_field_text` VALUES (3391, '与一般的R-T-B系烧结磁体相比，Hk的值相对于HcJ的值相对降低存在Hk/HcJ不足90%的问题。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3392, '提供一种具有HcJ和高Hk/HcJ的RTB系烧结磁铁的制造方法', 4565);
INSERT INTO `os_patent_field_text` VALUES (3393, '电解精制将镓还原为金属回收由于铁和硼杂质导致成本高的问题。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3394, '合金粉末的回收(收集)效率不足', 4565);
INSERT INTO `os_patent_field_text` VALUES (3395, '清洗液中经常含有气泡,而漂浮的气泡会引起被清洗物的位置偏移使超声波的作用力减弱', 4565);
INSERT INTO `os_patent_field_text` VALUES (3396, '合金粉末的回收(收集)效率是不', 4565);
INSERT INTO `os_patent_field_text` VALUES (3397, '将工件放置在冲孔板上并对其进行超声波清洗以防止其掉落的方法，其设置或拆除工件的工序变得复杂', 4565);
INSERT INTO `os_patent_field_text` VALUES (3398, '对于Dy含量低的R-T-B系烧结磁铁,寻求磁性能的进一步提高', 4565);
INSERT INTO `os_patent_field_text` VALUES (3399, '高温下矫顽力低', 4565);
INSERT INTO `os_patent_field_text` VALUES (3400, '提供一种降低重稀土元素的使用量且具有高的Br和高的HcJ的R－T－B系烧结磁体的制造方法', 4565);
INSERT INTO `os_patent_field_text` VALUES (3401, '能够在降低Dy的含量的同时得到高HcJ，存在Hk/HcJ降低的问题点。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3402, '从磁体表面向内部扩散RH的方法,并且发现获得高HcJ ,而H k / Hc J 明显减少。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3403, '供一种R-T-B系烧结磁体，其具有高Br和高HcJ，同时减少了Tb的使用量', 4565);
INSERT INTO `os_patent_field_text` VALUES (3404, '高Br和高HcJ的R－T－B系烧结磁体的制造方法', 4565);
INSERT INTO `os_patent_field_text` VALUES (3405, '较少重稀土', 4565);
INSERT INTO `os_patent_field_text` VALUES (3406, '能够在小空间中有效地供给工作的供给方法', 4565);
INSERT INTO `os_patent_field_text` VALUES (3407, '降低昂贵的重稀土元素的使用量', 4565);
INSERT INTO `os_patent_field_text` VALUES (3408, '降低昂贵的重稀土元素的使用量，并且获得更高的Br和更高的HcJ', 4565);
INSERT INTO `os_patent_field_text` VALUES (3409, '提高生产率', 4565);
INSERT INTO `os_patent_field_text` VALUES (3410, '降低扩散中有效重金属元素的损失', 4565);
INSERT INTO `os_patent_field_text` VALUES (3411, '产率降低,需要较长的时间进行烧结', 4565);
INSERT INTO `os_patent_field_text` VALUES (3412, '减少稀土元素且保持高Br高HcJ', 4565);
INSERT INTO `os_patent_field_text` VALUES (3413, '高温退磁', 4565);
INSERT INTO `os_patent_field_text` VALUES (3414, '降低重稀土元素的含量，同时抑制喷射研磨时研磨效率的劣化', 4565);
INSERT INTO `os_patent_field_text` VALUES (3415, 'Pr含量增加时，R-T-B烧结磁体的室温Hk/HcJ降低', 4565);
INSERT INTO `os_patent_field_text` VALUES (3416, '硬且脆，高精度研磨困难，且加工时间较长', 4565);
INSERT INTO `os_patent_field_text` VALUES (3417, '增加所述材料(产率)的利用效率', 4565);
INSERT INTO `os_patent_field_text` VALUES (3418, '增加稀土元素材料(产率)的利用效率，提高产量', 4565);
INSERT INTO `os_patent_field_text` VALUES (3419, '降低烧结的燃料成本', 4565);
INSERT INTO `os_patent_field_text` VALUES (3420, '提高微粉碎粉末的粒径', 4565);
INSERT INTO `os_patent_field_text` VALUES (3421, '为了防止研磨步骤中的粉末颗粒氧化', 4565);
INSERT INTO `os_patent_field_text` VALUES (3422, '降低成本，最大限度地利用永久磁铁的高磁特性', 4565);
INSERT INTO `os_patent_field_text` VALUES (3423, '由于当浆料在压力下注入到模具的空腔中,密度变化的粉末成形体的干扰的程度和取向在压制方向上的浆料和磁场方向和关系和模腔的条件下因为不同,所以难以稳定地生产高得到的磁特性。', 4565);
INSERT INTO `os_patent_field_text` VALUES (3424, '优选为针对粘结型磁体', 4567);
INSERT INTO `os_patent_field_text` VALUES (3425, '元素含量+熔融合金真空/减压气氛与冷却辊接触', 4567);
INSERT INTO `os_patent_field_text` VALUES (3426, '减少了在晶界相中形成非磁性相的Nd和/或Pr的量，', 4567);
INSERT INTO `os_patent_field_text` VALUES (3427, '提供一种粉末压实方法和设备,其甚至可以由填充密度不均匀的粉末材料以高生产率制造具有均匀密度分布的压坯。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3428, '延长线锯装置使用寿命', 4567);
INSERT INTO `os_patent_field_text` VALUES (3429, '使用选自正链烷烃，异链烷烃和解聚低聚物中的至少一种造粒剂将合金粉末造粒', 4567);
INSERT INTO `os_patent_field_text` VALUES (3430, '晶相构成', 4567);
INSERT INTO `os_patent_field_text` VALUES (3431, '提高稀土金属类永磁体耐腐蚀性；独权保护电镀液成分及镀铜的方法', 4567);
INSERT INTO `os_patent_field_text` VALUES (3432, '提供一种用于稳定地批量生产具有良好组织的急冷合金的制造方法', 4567);
INSERT INTO `os_patent_field_text` VALUES (3433, '纳米复合磁体( “nanocomposite magnet”)中软磁性Fe 3 B相和硬磁Nd 2 铁 14 B相共存；铁磁性铁基硼化物是软磁相，分散在晶界中或以薄膜形式存在于晶界上，以至少部分覆盖R2T14Q型化合物的晶粒表面。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3434, '两种合金粉末混合烧结', 4567);
INSERT INTO `os_patent_field_text` VALUES (3435, '改善了R-Fe-B基纳米复合体磁体的密度，表面上形成的空隙减小，耐腐蚀性得到改善', 4567);
INSERT INTO `os_patent_field_text` VALUES (3436, '将合金的熔融体急速冷却，制作凝固合金后，在400℃以上800℃以下的温度范围内进行保持5分钟以上12小时以下的热处理。通过该热处理，可以将RH从界相移动到主相，矫顽力增加。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3437, '气体出口与入口+气流上方的防风板', 4567);
INSERT INTO `os_patent_field_text` VALUES (3438, '压制多个生胚，放置在平面上，每个生胚的投影面积没有最大化，加热烧结', 4567);
INSERT INTO `os_patent_field_text` VALUES (3439, '抑制了磁性粉末的取向混乱', 4567);
INSERT INTO `os_patent_field_text` VALUES (3440, '减少稀土烧结磁体的加工时间和加工成本。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3441, '在对以形成相互反向磁化的区域的方式配置成圆筒状的磁铁进行磁化时，比以往更可靠地在规定的方向对区域的边界附近进行磁化', 4567);
INSERT INTO `os_patent_field_text` VALUES (3442, '耐腐蚀性、绝缘特性好，', 4567);
INSERT INTO `os_patent_field_text` VALUES (3443, '倾倒到辊之前，熔体经过一个倾斜的引导面；铁磁性铁基硼化物是软磁相，存在于R2Fe4B相的晶界或次晶界周围。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3444, '通过使热固性树脂均匀分散在碱性硅酸盐复膜中，碱性硅酸盐和热固性树脂相互作用而形成均匀的三维网络结构，即使在制冷剂或润滑油的存在下为使用环境的情况下，也能够有效地防止复膜的劣化', 4567);
INSERT INTO `os_patent_field_text` VALUES (3445, '利用喷丸工艺，使用结构简单的设备以低的价格，形成在磁体表面上形成膜', 4567);
INSERT INTO `os_patent_field_text` VALUES (3446, '晶界具有包括覆盖主相表面的非晶层部分和存在于被非晶层部分夹着的区域中的非磁性晶体层部分的新结构，抑制逆磁区的产生。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3447, '更有效地使用脉冲磁场', 4567);
INSERT INTO `os_patent_field_text` VALUES (3448, '通过选择适当的永磁体可以以降低的成本制造磁路。不仅有助于确定在永磁体中是否会发生退磁，而且还有助于在退磁之后计算其磁通密度分布。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3449, '制造具有优异流动性，压制成形性和优异磁特性的磁体', 4567);
INSERT INTO `os_patent_field_text` VALUES (3450, '提供一种使用新型的电镀铜处理用镀液的、表面具有密合性优异的镀铜被膜', 4567);
INSERT INTO `os_patent_field_text` VALUES (3451, '提供一种形成精细，均匀的电沉积薄膜的方法，该薄膜在制品表面上显示出优异的粘合性能', 4567);
INSERT INTO `os_patent_field_text` VALUES (3452, '廉价的耐腐蚀膜（硅酸锂和热塑性树脂），该膜兼具优异的耐热性和优异的粘合性', 4567);
INSERT INTO `os_patent_field_text` VALUES (3453, '硬磁相和软磁相体积比设定-参数计算-液体急冷法制合金', 4567);
INSERT INTO `os_patent_field_text` VALUES (3454, '易于磁化的永磁体的方法和压力机，腔体空间内有静磁场，粉末与磁场方向平行，压实粉末。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3455, '省略上述母合金的均质化处理和缩短氢化处理时间，提高矫顽力HcJ和剩磁Jr', 4567);
INSERT INTO `os_patent_field_text` VALUES (3456, '成型时加入油，加工成型，脱油，烧结。可以减少由于切割和研磨而产生的边缘材料的量，还可以抗氧化', 4567);
INSERT INTO `os_patent_field_text` VALUES (3457, '将硅酸锂和树脂的混合物涂覆在磁石表面，形成包含金属的保护膜', 4567);
INSERT INTO `os_patent_field_text` VALUES (3458, '保护组分及比例。Dy等重稀土元素在主相中比在晶界相中以更高的浓度存在并且可以容易地烧结', 4567);
INSERT INTO `os_patent_field_text` VALUES (3459, '在使用主要由电线锯装置中的水中的冷却剂切割稀土合金时,增加了线锯的寿命。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3460, '粉末填充；将装载在空腔中的稀土合金粉末压缩在一对相对的压具表面之间；在执行压缩步骤时，直到空腔中稀土合金粉末的表观密度达到预定值，至少等于其真实密度的47%，才施加基本上垂直于压缩方向的脉冲磁场。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3461, '使作为无肥皂水溶性乳液树脂分散在处理液中的热塑性树脂以0.1重量%～50重量%的含量均匀分散在涂层中，防止涂层劣化', 4567);
INSERT INTO `os_patent_field_text` VALUES (3462, '使R2T14Q型化合物及铁基硼化物优先成核，提高矫顽力，同时保持高的剩磁', 4567);
INSERT INTO `os_patent_field_text` VALUES (3463, '组分+制备方法。主相+包围主相的结界相（R2T14Q）。主相中的碳浓度高于晶界相中的碳浓度。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3464, '一种磁场中成形装置，用于制造表面磁通密度分布的正弦波匹配率稳定且高，并入到马达中时实质上不产生正交扭矩的极各向异性环形磁体。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3465, '提高冷却速率，倾倒到辊之前，熔体经过一个倾斜的引导面。可批量生产的水平上持续地制造纳米复合磁体用的快速凝固合金，该合金具有优异的磁性。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3466, '绝缘性优异的无机被膜', 4567);
INSERT INTO `os_patent_field_text` VALUES (3467, '', 4567);
INSERT INTO `os_patent_field_text` VALUES (3468, '包含磷和钙作为构成成分的无机涂膜', 4567);
INSERT INTO `os_patent_field_text` VALUES (3469, '低淬火速率的淬火设备，二次淬火', 4567);
INSERT INTO `os_patent_field_text` VALUES (3470, '改善的矫顽力；制造不发生变形或裂纹并且磁的定向性优良的径向各向异性的烧结型R-Fe-B系永磁体', 4567);
INSERT INTO `os_patent_field_text` VALUES (3471, '相对少量的稀土元素和相对大量的硼，但是表现出优异的磁性能', 4567);
INSERT INTO `os_patent_field_text` VALUES (3472, '将通过条形铸造法得到的铸片进行粉碎来制作R-Fe-B系永久磁铁粉末。定向磁场+取向中心外磁场强度最高点倾斜磁场，使永久磁体粉末的填充密度相对地上升，同时进行磁场取向，之后进行烧结。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3473, '烷基硅酸盐的水解聚合反应物和锌涂层后，热处理，锌从表面向内部扩散。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3474, '表面上有有机颜料层', 4567);
INSERT INTO `os_patent_field_text` VALUES (3475, '提出了一种成型装置（脉冲磁场）', 4567);
INSERT INTO `os_patent_field_text` VALUES (3476, '元素含量+成型、烧结', 4567);
INSERT INTO `os_patent_field_text` VALUES (3477, '一种磁场定向装置，包括可以在圆柱孔的基本整个长度上，通过抑制磁化弯曲而产生强度为1.0T或更大的均匀平行磁场的磁场发生器', 4567);
INSERT INTO `os_patent_field_text` VALUES (3478, '烧结容器壳体主体及上述门部件由钼构成', 4567);
INSERT INTO `os_patent_field_text` VALUES (3479, '在金属容器中密封由金属粉末或合金粉末和吸气剂材料组成的材料粉末（该吸气剂材料在减压下的氧化电位高于材料粉末的氧化电位），500度保持1~50h，之后加压升温烧结。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3480, '制备具有柱状晶型的两组枝晶宽度不同的合金粉末', 4567);
INSERT INTO `os_patent_field_text` VALUES (3481, '交替衰减磁场磁化粉末；螺旋供给粉末；振动，给粉末动能使旋转', 4567);
INSERT INTO `os_patent_field_text` VALUES (3482, '粉末表面铝涂层涂覆，在进行热处理', 4567);
INSERT INTO `os_patent_field_text` VALUES (3483, '电解还原法在镀镍涂层表面电沉积钼酸盐涂层', 4567);
INSERT INTO `os_patent_field_text` VALUES (3484, '在垂直于切割表面的方向上布置有多个板状部分，可平行于切割面交替移动，将成形体平行切割成板状，并有按压部平行于切割方向，将切割后的成形体分离。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3485, '在烧结体表面进行Al涂层（气相法）后，用Zn和/或者Sn进行置换，形成含有三价铬和碳（组成成分）以及自由六价铬的化学合成薄膜', 4567);
INSERT INTO `os_patent_field_text` VALUES (3486, '在烧结体表面进行Al涂层（气相法）后，用Zn和/或者Sn进行置换，形成含有磷酸盐（至少含有Mg,Ca,Ba,Sr中的1种金属）的难溶于水乃至不溶于水的无机物薄膜', 4567);
INSERT INTO `os_patent_field_text` VALUES (3487, '填充预定密度，取向，无压直接烧结', 4567);
INSERT INTO `os_patent_field_text` VALUES (3488, '硼或者其混合物0.85~0.98质量%,', 4567);
INSERT INTO `os_patent_field_text` VALUES (3489, '添加0.3质量％以下的Zr、可不生产硼化物相，并抑制异常粒成长', 4567);
INSERT INTO `os_patent_field_text` VALUES (3490, '提高残余磁通密度Br或矫顽力Hcj。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3491, '提供一种R-T-B系永磁体用薄板状原料合金，其可以通过控制合金中存在的富含R的相来提高磁性。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3492, '环状磁体，内周外周有数个磁极，并固定在环状磁轭上。磁铁或者磁轭至少一个端面有树脂间隔物，外部被树脂层覆盖，并与树脂间隔物连接。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3493, '提供一种磁路，能够产生最大的强磁场，并使用永久磁铁在磁路中获得强磁场梯度', 4567);
INSERT INTO `os_patent_field_text` VALUES (3494, '圆柱形被膜形成装置，桶内附加张力并架设金属制弹簧，抑制膜的破损，高效被膜', 4567);
INSERT INTO `os_patent_field_text` VALUES (3495, '一种波动器，在第一磁路和第二磁路之间的空间相对布置的情况下，在空间中形成的磁场可以被增强，并且防辐射特性得到改善。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3496, '两种合金微粉末混合-成型-取向-烧结', 4567);
INSERT INTO `os_patent_field_text` VALUES (3497, '处理物在蒸镀容器内以水平方向的旋转轴线为中心旋转，处理物加热到200℃～350℃后开始蒸镀', 4567);
INSERT INTO `os_patent_field_text` VALUES (3498, '优异防水性', 4567);
INSERT INTO `os_patent_field_text` VALUES (3499, '通过脉冲电镀在表面镀存在板状晶体的晶界的具有层状结构的铜层，通过脉冲镀形成的铜涂层及其表面形成的耐蚀性涂层的界面上形成不连续面。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3500, '表面进行氧化或氟化处理', 4567);
INSERT INTO `os_patent_field_text` VALUES (3501, '使重金属集中在主相：急冷工程+2个温度保持工程', 4567);
INSERT INTO `os_patent_field_text` VALUES (3502, '不必使用特殊的模具或CIP，粉末成形体的取向度提高，它具有优异的磁特性', 4567);
INSERT INTO `os_patent_field_text` VALUES (3503, '元素比例（含有Ni）+粉碎+烧结', 4567);
INSERT INTO `os_patent_field_text` VALUES (3504, 'pH=9.0～11.5；Cu2+、Cu2+的螯合剂（安定度10.0）、Fe3+的螯合剂（安定度16.0）', 4567);
INSERT INTO `os_patent_field_text` VALUES (3505, '具有优异的耐腐蚀性', 4567);
INSERT INTO `os_patent_field_text` VALUES (3506, '氢碎工序中，在粒子表面形成一层非稀土层，控制氢化反应速率不至于过快，使主相结晶取向度提高，增加磁性能；同时非稀土层也能够抑制腐蚀', 4567);
INSERT INTO `os_patent_field_text` VALUES (3507, '元素比例+急冷+粉碎+晶粒尺寸', 4567);
INSERT INTO `os_patent_field_text` VALUES (3508, '元素比例+晶相结构', 4567);
INSERT INTO `os_patent_field_text` VALUES (3509, '粉末混合润滑剂-粉末填充模具-加磁场定向-不挤压成型的情况下与模具一同加热', 4567);
INSERT INTO `os_patent_field_text` VALUES (3510, '粉末加入容器后，容器减压，后进行抗氧剂浸渍', 4567);
INSERT INTO `os_patent_field_text` VALUES (3511, '残留磁束密度Br≧0.9T、最大磁能积(BH)max≧110kJ/m3、固有保磁力HcJ≧400kA/m', 4567);
INSERT INTO `os_patent_field_text` VALUES (3512, '高矫顽力和高剩磁的磁体', 4567);
INSERT INTO `os_patent_field_text` VALUES (3513, '通过加热使所述重稀土元素RH扩散到所述R-Fe-B系稀土烧结磁体的内部', 4567);
INSERT INTO `os_patent_field_text` VALUES (3514, '一种基本上不含硼酸的加工液（水溶性仲胺和叔胺，非水溶性仲胺，羧酸，水）', 4567);
INSERT INTO `os_patent_field_text` VALUES (3515, '两个重稀土含量不同的烧结体接触，通过加热，使稀土从高稀土含量体向低稀土含量体表面转移。可以有效利用过量的重稀土，并能有效提高矫顽力。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3516, '提供提高了切削屑的排出效率的线锯装置和切断方法。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3517, '提高矫顽力', 4567);
INSERT INTO `os_patent_field_text` VALUES (3518, '通过在烧结磁体表面上形成含有作为重稀土类元素的Dy和Al等低熔点金属的合金层、并进行扩散处理，可促进Dy的晶界扩散。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3519, '先通过电解将Dy电镀在烧结体表面，再加热使其扩散到烧结体内部', 4567);
INSERT INTO `os_patent_field_text` VALUES (3520, '表面保护层主要包含从磁体内部扩散到表面的轻稀土元素RL的氧化物', 4567);
INSERT INTO `os_patent_field_text` VALUES (3521, '对不特意添加Al或Cu的R-T-B系烧结磁铁的基本三元组成微量地添加各种元素时，使硼( b )的量为5.2原子%〜6.0原子%，且通过微量添加的Ag、Ga的作用，能够显示出比添加了Cu或Al的以往的R-Fe-B系烧结磁铁更高的磁铁特性.', 4567);
INSERT INTO `os_patent_field_text` VALUES (3522, '高密封可靠性', 4567);
INSERT INTO `os_patent_field_text` VALUES (3523, '表面有无机膜', 4567);
INSERT INTO `os_patent_field_text` VALUES (3524, '元素比例+急冷凝固、粉碎、成型、烧结', 4567);
INSERT INTO `os_patent_field_text` VALUES (3525, '表面金属膜+磁体和金属膜之间的反应层', 4567);
INSERT INTO `os_patent_field_text` VALUES (3526, '在稀土类永久磁铁的表面形成镀铜覆膜。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3527, '表面具有发挥优良的耐盐水性的含Mg的Al覆膜', 4567);
INSERT INTO `os_patent_field_text` VALUES (3528, '延伸研磨车轮寿命，得到不易缺损的烧结磁铁', 4567);
INSERT INTO `os_patent_field_text` VALUES (3529, '优良的磁特性', 4567);
INSERT INTO `os_patent_field_text` VALUES (3530, '缩短氢粉碎的时间成本而不降低磁特性', 4567);
INSERT INTO `os_patent_field_text` VALUES (3531, '含有Dy和/或Tb的金属附着物附着并加热+金属附着物组分+母体含氧量', 4567);
INSERT INTO `os_patent_field_text` VALUES (3532, '粉末填充模具-取向-与模具一同烧结+模具包括碳材料', 4567);
INSERT INTO `os_patent_field_text` VALUES (3533, '但仍然存在耐盐性不足的问题，提高耐盐性。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3534, '在抑制剩余磁通密度Br和平方比Hk/HcJ的降低的同时，提高了矫顽力HcJ', 4567);
INSERT INTO `os_patent_field_text` VALUES (3535, '具有富R相均匀且微细地分散的结构，具有优异的粉碎性，并且可以增加取向度。具有富R相均匀且微细地分散的结构，具有优异的粉碎性，并且可以增加取向度。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3536, '分析设备+方法+计算机程序', 4567);
INSERT INTO `os_patent_field_text` VALUES (3537, '耐腐蚀性，涂层在防潮试验之后也可以保持高粘合强度。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3538, '表面形成Dy和/或Tb的层之后，热处理+基材厚度、稀土含量、角型性参数', 4567);
INSERT INTO `os_patent_field_text` VALUES (3539, '基材中金属态RH为12.9原子%以上，Dy/Tb层每1cm2涂覆5mg', 4567);
INSERT INTO `os_patent_field_text` VALUES (3540, '接合工艺，利用烧结而不是通过粘合剂就实现牢固的结合；', 4567);
INSERT INTO `os_patent_field_text` VALUES (3541, '抑制由重稀土类元素RH的浓度差引起的烧结磁铁的烧结工序中的收缩率差引起的变形。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3542, '扩散源：含Dy或/及Tb、Al + 基材氧含量范围', 4567);
INSERT INTO `os_patent_field_text` VALUES (3543, '耐腐蚀，保持优良的粘接强度', 4567);
INSERT INTO `os_patent_field_text` VALUES (3544, '采用本发明的稀土类永久磁铁制作的接合结构体，在与硅酮类粘接剂的组合中具有良好的初期粘接强度，即使在耐湿性试验后粘接强度的降低也小。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3545, '其原因是，在大量（例如1.5原子%以上）置换添加Tb和Dy的情况下，容易生成R6T23化合物、RT3化合物、或者R-T-B系的主相以外的未识别的化合物等，其结果Tb和Dy浓缩在主相以外的上述化合物等中结果，R-T-B烧结磁体的主相R2T14B型化合物中的R置换量变少，矫顽力的提高幅度变小。另外，由于所述化合物的生成，主相的体积率减少，磁化降低。并且，在原料合金的组织中生成了R6T23化合物和RT3化合物等的情况下，在作为R-T-B系烧结磁体的粉末冶金的制造方法的主要工序的粉碎工序中，产生粉碎困难、组成大幅度偏离等问题。这些结果是，与昂贵的Tb和Dy的添加量相匹配的磁石特性没有充分得到。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3546, '内部的广大范围内矫顽力HcJ上升', 4567);
INSERT INTO `os_patent_field_text` VALUES (3547, '填充预定密度，取向（交界磁场和直流磁场组合），无压直接烧结，烧结排出气体', 4567);
INSERT INTO `os_patent_field_text` VALUES (3548, '元素比例+衍射峰', 4567);
INSERT INTO `os_patent_field_text` VALUES (3549, '提高耐腐蚀性', 4567);
INSERT INTO `os_patent_field_text` VALUES (3550, '填充装置+定向装置+烧结装置+转移装置', 4567);
INSERT INTO `os_patent_field_text` VALUES (3551, '改善扩散过程中稀土烧结磁体和治具之间的熔敷', 4567);
INSERT INTO `os_patent_field_text` VALUES (3552, '表面改性', 4567);
INSERT INTO `os_patent_field_text` VALUES (3553, '耐盐水性', 4567);
INSERT INTO `os_patent_field_text` VALUES (3554, '耐腐蚀', 4567);
INSERT INTO `os_patent_field_text` VALUES (3555, '厚度变化减半', 4567);
INSERT INTO `os_patent_field_text` VALUES (3556, 'B:0.92質量%以上、1質量%以下；Ga：0.5重量%以下(包括0重量%)', 4567);
INSERT INTO `os_patent_field_text` VALUES (3557, '含氢气体的气流，即氢气体和惰性气体的混合气体来进行微粉碎。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3558, '防脱粒、表面改性', 4567);
INSERT INTO `os_patent_field_text` VALUES (3559, '耐盐水', 4567);
INSERT INTO `os_patent_field_text` VALUES (3560, '稳定烧结品质，降低成本', 4567);
INSERT INTO `os_patent_field_text` VALUES (3561, '通过不使用树脂粘合剂而对稀土类急冷合金粉末进行冷压缩成型，磁粉体积比高，磁特性优异，并且在强度和耐气候性方面也具有优良特性', 4567);
INSERT INTO `os_patent_field_text` VALUES (3562, '利用Mn作为稳定元素提高Cu的添加量', 4567);
INSERT INTO `os_patent_field_text` VALUES (3563, '更高的耐腐蚀性', 4567);
INSERT INTO `os_patent_field_text` VALUES (3564, '具有优良的耐腐蚀性和粘合目标之间优良的粘合强度', 4567);
INSERT INTO `os_patent_field_text` VALUES (3565, '提高HDDR磁粉的矫顽力', 4567);
INSERT INTO `os_patent_field_text` VALUES (3566, '用含有氢的Al膜进行喷丸处理，提高Al涂层的耐腐蚀性', 4567);
INSERT INTO `os_patent_field_text` VALUES (3567, '改善简单的耐腐蚀性', 4567);
INSERT INTO `os_patent_field_text` VALUES (3568, '烧结工序结束后，上述烧结体的结晶粒中最大的圆相当直径为25μm以下', 4567);
INSERT INTO `os_patent_field_text` VALUES (3569, '提高膜的致密性，从而提高金属涂膜的耐腐蚀性', 4567);
INSERT INTO `os_patent_field_text` VALUES (3570, '扩散+扩散用的夹具', 4567);
INSERT INTO `os_patent_field_text` VALUES (3571, '提高磁体整体的剩余磁通密度和矫顽力。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3572, '采用叠层扁平的磁体粉末颗粒提高磁体致密度', 4567);
INSERT INTO `os_patent_field_text` VALUES (3573, '磁铁与铝涂层之间的优异粘附', 4567);
INSERT INTO `os_patent_field_text` VALUES (3574, '对磁体热处理，表面改性', 4567);
INSERT INTO `os_patent_field_text` VALUES (3575, '缩短储氢室中的加工时间，防止原料合金的氧化', 4567);
INSERT INTO `os_patent_field_text` VALUES (3576, '晶界扩散加热时，抑制重物稀土元素RH在烧结磁体的表面区域中的主基粒内的扩散', 4567);
INSERT INTO `os_patent_field_text` VALUES (3577, '晶界扩散用涂覆装置+涂覆预定图案', 4567);
INSERT INTO `os_patent_field_text` VALUES (3578, '能够大幅提高氢粉碎粉的成品率', 4567);
INSERT INTO `os_patent_field_text` VALUES (3579, '重金属通过蒸汽控制扩散到到磁体表面', 4567);
INSERT INTO `os_patent_field_text` VALUES (3580, '含Dy或/和Tb的扩散源粉末涂覆以在基体表面，扩散后每1cm2扩散10mg以上', 4567);
INSERT INTO `os_patent_field_text` VALUES (3581, '处理方式：旋转、摆动、振动', 4567);
INSERT INTO `os_patent_field_text` VALUES (3582, '耐蚀；不进行涂层处理；包装密封防腐蚀，即使在湿度在很大程度上波动或容易暴露于氯离子的恶劣环境中,也可以确保R-Fe-B永磁体的耐腐蚀性。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3583, 'R-Fe是将RL的一部分置换为RH而得到的R-Fe，具有优异的耐腐蚀性，能够在表面形成密合性优异的金属皮膜或树脂皮膜等耐蚀皮膜。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3584, '耐蚀', 4567);
INSERT INTO `os_patent_field_text` VALUES (3585, '比磷酸盐覆膜等以往的化学转化覆膜耐腐蚀性更优良', 4567);
INSERT INTO `os_patent_field_text` VALUES (3586, '改善的矫顽力而不会过度供应并且几乎不会降低剩余磁通密度', 4567);
INSERT INTO `os_patent_field_text` VALUES (3587, 'RH扩散源以可移动且可接近或接触的方式投入处理室内', 4567);
INSERT INTO `os_patent_field_text` VALUES (3588, 'HDDR，在不使用Dy，Tb等的情况下改善R-T-B永磁体粉末的矫顽力', 4567);
INSERT INTO `os_patent_field_text` VALUES (3589, '调节氢粉末的氧含量，防止氢研磨粉末的氧化，提高回收氢粉末粉末的便利性', 4567);
INSERT INTO `os_patent_field_text` VALUES (3590, '防止回收过程中稀土元素被氧化', 4567);
INSERT INTO `os_patent_field_text` VALUES (3591, '即使进行RH扩散的处理室的压力、温度等向R—T-B系烧结磁铁的RH扩散工序的条件变化，也能稳定扩散', 4567);
INSERT INTO `os_patent_field_text` VALUES (3592, '具有优异的耐腐蚀性和优异的磁性能', 4567);
INSERT INTO `os_patent_field_text` VALUES (3593, '增加磁体的耐腐蚀性', 4567);
INSERT INTO `os_patent_field_text` VALUES (3594, '通过加压加热，生产高剩磁高性能磁体', 4567);
INSERT INTO `os_patent_field_text` VALUES (3595, '提供一种通过显著减少R-T-B烧结磁体与支架之间的接触面积而减少R-T-B烧结磁体与支架之间焊接发生的沉积扩散处理的壳体，以及使用这种沉积扩散处理的壳体制造R-T-B烧结磁体的方法', 4567);
INSERT INTO `os_patent_field_text` VALUES (3596, '多个扩散源+减压环境热处理', 4567);
INSERT INTO `os_patent_field_text` VALUES (3597, '支撑体设计', 4567);
INSERT INTO `os_patent_field_text` VALUES (3598, '降低粉碎成本，通过将作为RH扩散源的RH-Fe合金和RL金属混合而成的粉末状扩散材料的粒径比较大的筛子，利用63μm以上500μm以下的RH-Fe合金使重稀土类元素RH有效地扩散。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3599, 'R\'-Cu合金粉末，进行HDDR处理制造的R-T-B永磁体粉末的同时具有大的矫顽力', 4567);
INSERT INTO `os_patent_field_text` VALUES (3600, '支撑体交替层叠', 4567);
INSERT INTO `os_patent_field_text` VALUES (3601, '通过还原扩散法获得的稀土-过渡金属系合金粉末的减磁曲线的弧形性得以改善，并且能够提高永久磁体性能的稀土-过渡金属系合金粉末的制造方法', 4567);
INSERT INTO `os_patent_field_text` VALUES (3602, '铁和R的氧化物', 4567);
INSERT INTO `os_patent_field_text` VALUES (3603, 'RH扩散源和R-T-B烧结磁体通过具有开口部的支撑件交替层叠，构成层叠体。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3604, '热处理使重稀土元素RH（包含Dy和Tb中的至少一种）向R-T-B类烧结磁体的内部扩散', 4567);
INSERT INTO `os_patent_field_text` VALUES (3605, '能够重复使用RH扩散源，且能够高效地生产R-T-B类烧结磁体。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3606, '抑制R-T-B磁体的退磁', 4567);
INSERT INTO `os_patent_field_text` VALUES (3607, 'Dy或Tb的氟化物、氧化物和氧化氟化物中的至少一个为扩散源', 4567);
INSERT INTO `os_patent_field_text` VALUES (3608, '利用比较少量的重稀土元素RH，不会降低剩余磁通密度，能有效实现矫顽力的增加。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3609, '研磨助剂-细碎湿法模制-烧结', 4567);
INSERT INTO `os_patent_field_text` VALUES (3610, '防止或沉积在物体的表面上形成的损伤金属膜，工件可以从管状体的开口端部取出和取出', 4567);
INSERT INTO `os_patent_field_text` VALUES (3611, '多孔质磁铁，具有较高的方向和剩磁密度的RTB系永磁体', 4567);
INSERT INTO `os_patent_field_text` VALUES (3612, 'HDDR方法，使Nd-Cu合金扩散，具有良好的矩形度和高矫顽力的R-T-B型永磁体', 4567);
INSERT INTO `os_patent_field_text` VALUES (3613, '热处理下简单低成本回收稀土元素', 4567);
INSERT INTO `os_patent_field_text` VALUES (3614, '在低于一般电解处理条件的温度和较低的施加电压下，高效地熔盐电解制造金属或稀土元素的合金', 4567);
INSERT INTO `os_patent_field_text` VALUES (3615, '元素组成+混粉、成型、烧结', 4567);
INSERT INTO `os_patent_field_text` VALUES (3616, '计算方法,磁力特性计算装置和计算机程序。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3617, '够使重稀土元素RH高效率地向R－T－B类烧结磁体扩散，不使Br降低而使HcJ大幅提高。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3618, '附图说明', 4567);
INSERT INTO `os_patent_field_text` VALUES (3619, '通过热处理，有效地从R-Fe-B磁铁的废料或矿渣、已使用磁铁等产生的含碳合金中除去碳来制造合金再生材料', 4567);
INSERT INTO `os_patent_field_text` VALUES (3620, '通过氧化处理,然后通过热处理的方式，一种低成本、简单的回收方法', 4567);
INSERT INTO `os_patent_field_text` VALUES (3621, '熔融金属提取法从稀土磁体中高效地回收稀土金属', 4567);
INSERT INTO `os_patent_field_text` VALUES (3622, '具有优异的耐腐蚀性和优异的表面粘附性的表面改性的R-Fe-B基烧结磁体', 4567);
INSERT INTO `os_patent_field_text` VALUES (3623, '相对容易地除去电镀镍溶液中的稀土杂质而不使用复杂的工艺,而不使用特殊剂', 4567);
INSERT INTO `os_patent_field_text` VALUES (3624, '通过还原扩散法低成本有效地制造用于永久磁铁的含铜的稀土-铁-硼合金粉末', 4567);
INSERT INTO `os_patent_field_text` VALUES (3625, '多个搅拌辅助部件、多个R-T-B烧结磁体素材', 4567);
INSERT INTO `os_patent_field_text` VALUES (3626, 'RH附着面3mm深内，同深度的晶界中RH的浓度与主相中RH的浓度有差值', 4567);
INSERT INTO `os_patent_field_text` VALUES (3627, '所述金属间化合物的结晶粒的外壳部中重金属浓化，磁体表层粒含有前述结晶粒的粒界多重点存在的金属相', 4567);
INSERT INTO `os_patent_field_text` VALUES (3628, '含有0~80质量%Fe的RH作为扩散源', 4567);
INSERT INTO `os_patent_field_text` VALUES (3629, '含有40~80质量%Fe的RH作为扩散源', 4567);
INSERT INTO `os_patent_field_text` VALUES (3630, '热处理的方式，简单和低成本回收含有稀土元素、铁元素和硼的处理对象物中分离回收稀土元素', 4567);
INSERT INTO `os_patent_field_text` VALUES (3631, '外壳重金属浓化，Pr和Al扩散', 4567);
INSERT INTO `os_patent_field_text` VALUES (3632, '能够提供抑制高温下的剩余磁通密度Br的降低且固有矫顽力HcJ高', 4567);
INSERT INTO `os_patent_field_text` VALUES (3633, '不使用Dy，热处理的办法来提高矫顽力；HDDR处理', 4567);
INSERT INTO `os_patent_field_text` VALUES (3634, 'R－T－B系烧结磁石体与保持部件不发生熔接，使生产效率提高', 4567);
INSERT INTO `os_patent_field_text` VALUES (3635, '与定向的NdFeB系合金粉末烧结的烧结体的结晶粒的内部相比，在该结晶粒的表面附近存在更多的Dy和/或Tb，角型比为95%以上，矫顽磁力在32.197kOe以上。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3636, '使用碱金属硫酸盐或碱金属硫酸盐的溶液，生成稀土元素的硫酸双盐沉淀，并回收重稀土元素', 4567);
INSERT INTO `os_patent_field_text` VALUES (3637, '向空腔内注入所述浆料，以使浆料从与外周面和内周面中的一个面的滑动方向垂直的断面中的一个部分朝向与另一个面的滑动方向垂直的断面中的一个部分。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3638, '上冲头和所述下冲头的至少一方与可移动的方向平行的方向上施加1.5T以上的磁场的状态下，以20～600cm/秒的流量持续供给所述浆料，用所述浆料满足该空腔，并压制成型', 4567);
INSERT INTO `os_patent_field_text` VALUES (3639, '氢碎过程到定向过程不进行脱氢加热和真空抽离，在无氧气氛下进行从氢分解工序到上述烧结工序的各工序', 4567);
INSERT INTO `os_patent_field_text` VALUES (3640, '施加磁场的同时，使上冲头和下冲头接近，在所述多个空腔的各个内部获得所述合金粉末的成形体。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3641, '能够稳定地成形出单体重量偏差少的成形体，能够稳定地成形出单体重量偏差少的成形体', 4567);
INSERT INTO `os_patent_field_text` VALUES (3642, 'c轴取向，截面粒径中央值+面积率', 4567);
INSERT INTO `os_patent_field_text` VALUES (3643, '油剂喷涂工艺参数', 4567);
INSERT INTO `os_patent_field_text` VALUES (3644, '从使用过的磨削液中有效地再生磨削液，并使用再生的磨削液和磨削用介质对稀土类烧结磁铁进行滚筒研磨', 4567);
INSERT INTO `os_patent_field_text` VALUES (3645, '磁体的端部与中心的矫顽力之间的差异很小，提高矫顽力', 4567);
INSERT INTO `os_patent_field_text` VALUES (3646, '氧化；分离氧化物；粉末力度优化；氯化剂混合；氯化/氧氯化热处理，一组分溶解在溶剂中，另一组分固化沉淀。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3647, '能够提供抑制Dy、Tb的含量且具有高Br、高HcJ', 4567);
INSERT INTO `os_patent_field_text` VALUES (3648, '通过热处理在1150℃或更高的办法减少含有硼的稀土元素的氧化物的硼含量', 4567);
INSERT INTO `os_patent_field_text` VALUES (3649, '提供一种从包括至少稀土元素和铁基团的过程对象中回收稀土元素的方法,', 4567);
INSERT INTO `os_patent_field_text` VALUES (3650, '氧化处理和热处理，低成本、简单的回收稀土元素的方法', 4567);
INSERT INTO `os_patent_field_text` VALUES (3651, '从含有重稀土元素和铁族元素的处理对象物中回收重稀土元素', 4567);
INSERT INTO `os_patent_field_text` VALUES (3652, '料斗给粉，塑型时不加压直接烧结，含氮气氛', 4567);
INSERT INTO `os_patent_field_text` VALUES (3653, '塑型时不加压直接烧结。粉末塑型容器放置在空芯线圈内，在空芯线圈的开口端，配置有多层重叠的与空芯线圈轴向垂直的板状磁体或者粉末磁体。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3654, '粉末填充塑型容器（不加压），并取向，比大气压更高的压力下的惰性气体气氛中加热合金粉末，直到比氢解离温度高且低于所述烧结温度的预定加压维持温度为止。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3655, '粒度分布の平均値が1μm以下，但是一种结晶粒的面积比是另一种的90%。取向成型烧结。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3656, '磁石厚度5.5mm以下、每个位置的Tb、Ni和Al的浓度越接近该RFB磁体的表面越高、每个位置的矫顽力的最大值和最小值之间的差异小于1koe', 4567);
INSERT INTO `os_patent_field_text` VALUES (3657, '扩散源中含有Dy、Ho和Tb。表面有RL的氧化物保护层', 4567);
INSERT INTO `os_patent_field_text` VALUES (3658, 'B:5.2原子%或更多5.6原子%或更低,', 4567);
INSERT INTO `os_patent_field_text` VALUES (3659, 'Ga:0.2原子%或更多1.0原子%或更低,', 4567);
INSERT INTO `os_patent_field_text` VALUES (3660, '旋转刷与角部和边缘接触', 4567);
INSERT INTO `os_patent_field_text` VALUES (3661, '两种组分氧化后，转移到碳环境中热处理，并进行分离。将石油焦炭作为碳供给源与处理物混合，在惰性气体或者真空中进行热处理。减少容器消耗，降低成本。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3662, '可以从至少含有稀土元素和铁族元素的待处理物体中有效地回收稀土元素，而且处理容器可以长期反复使用，对其磨损和损坏有限', 4567);
INSERT INTO `os_patent_field_text` VALUES (3663, '成型粉末取向后和成型模具一同烧结。取向时模具侧面和底面外侧有支撑箱。取向完成后去除支撑箱或者去除支撑箱的侧面。烧结模具随烧结耗尽。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3664, '0.4≦x≦1.0 (2)', 4567);
INSERT INTO `os_patent_field_text` VALUES (3665, '0.84≤w≤0.93', 4567);
INSERT INTO `os_patent_field_text` VALUES (3666, '主相的存在比率变低、Br大幅降低', 4567);
INSERT INTO `os_patent_field_text` VALUES (3667, 'GA：0.20≦x≦0.70', 4567);
INSERT INTO `os_patent_field_text` VALUES (3668, '提供一种抑制Dy的含量且具有高Br和高HcJ的R-T-B系烧结磁体的制造方法。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3669, '适用于批量生产工艺', 4567);
INSERT INTO `os_patent_field_text` VALUES (3670, '通过对至少含有稀土元素和铁族元素的被处理物进行氧化处理，然后将处理环境转移到有碳的地方并进行热处理，将稀土元素作为氧化物从铁族元素中分离和回收，以便有效地回收稀土元素', 4567);
INSERT INTO `os_patent_field_text` VALUES (3671, '有效地干燥磁铁件', 4567);
INSERT INTO `os_patent_field_text` VALUES (3672, 'B:0.9至1.0%(重量),', 4567);
INSERT INTO `os_patent_field_text` VALUES (3673, 'Ga:0.2至0.6%(重量),', 4567);
INSERT INTO `os_patent_field_text` VALUES (3674, '提供一种磁化和磁场的检测电压波形的磁特性可以在没有相位差测量方法和磁特性测定装置进行测定', 4567);
INSERT INTO `os_patent_field_text` VALUES (3675, '通过热处理的方法回收加工靶中的稀土元素', 4567);
INSERT INTO `os_patent_field_text` VALUES (3676, '通过小的力量有效地分离两种类型的块状物', 4567);
INSERT INTO `os_patent_field_text` VALUES (3677, '除去附着在磁场中的磁性粉末获得的模制体的表面上附着的不需要的磁粉的方法及装置。用于剥离磁粉的磁场的方向和强度随时间变化。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3678, 'HcJ相对于B量的变化变化较少，并且具有高Br和高HcJ。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3679, '0.93≦w≦1.00 (3)', 4567);
INSERT INTO `os_patent_field_text` VALUES (3680, '0.3≦x≦0.8 (4)', 4567);
INSERT INTO `os_patent_field_text` VALUES (3681, '氢碎后，在氢气中进行第一热处理（100KPa以上，600℃〜900℃）；降至10KPa以下，1000℃以上进行第二热处理。提高了废旧磁体的利用率，同时减少了碳排放。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3682, 'R-T-B合金粉末表面覆盖有R浓缩层，制备具有高矫顽力的R-T-B基烧结磁体的R-T-B基合金粉末。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3683, '合金和气体导入粉碎槽进行磨削和粉碎，气压0.65MPa以上+滞留8分钟以上/气压0.75MPa以上+滞留5分钟以上，停留时间微粉末具有小角度，取向度提高，Br提高。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3684, '0.86≤W≤0.93,', 4567);
INSERT INTO `os_patent_field_text` VALUES (3685, '0.2≤x≤1.0,', 4567);
INSERT INTO `os_patent_field_text` VALUES (3686, 'B:0.82至0.92质量%,', 4567);
INSERT INTO `os_patent_field_text` VALUES (3687, 'GA:0.4至0.7%质量', 4567);
INSERT INTO `os_patent_field_text` VALUES (3688, '能够以高批量 - 生产效率进行扩散处理', 4567);
INSERT INTO `os_patent_field_text` VALUES (3689, '在不使剩余磁通密度降低地使重稀土元素RH从R-T-B类烧结磁体原料的表面向内部扩散的R-T-B类烧结磁体的制造方法中，能够抑制R-T-B类烧结磁体的破裂、缺损的发生。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3690, '提供了一种制作圆柱或者棒状成型体的模具', 4567);
INSERT INTO `os_patent_field_text` VALUES (3691, '将稀土元素作为氧化物与铁族元素分离，', 4567);
INSERT INTO `os_patent_field_text` VALUES (3692, '简化了工序。2次高温氧气环境下的热处理', 4567);
INSERT INTO `os_patent_field_text` VALUES (3693, '高的效率进行还原并使RH扩散至R－T－B系烧结磁铁内部', 4567);
INSERT INTO `os_patent_field_text` VALUES (3694, 'RLAl合金能够以比现有技术更高的效率还原RH化合物，使RH向R-T-B系烧结磁铁内部扩散，因此能够以相对少的RH量提高HcJ。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3695, '尽可能不用重稀土元素RH，而是采用Br、HcJ、稳定制造所有高Hk/HcJ的具有优良磁特性的磁体。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3696, 'Ga:0至0.4质量%,', 4567);
INSERT INTO `os_patent_field_text` VALUES (3697, 'RLM合金能够以比现有技术更高的效率还原RH氧化物，使RH向R-T-B系烧结磁铁内部扩散，因此能够以比现有技术少的RH量使HcJ提高到与现有技术同等以上。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3698, '破碎时添加磷酸化合物；在含有不饱和键的碳氢化合物气氛中热处理（100度~300度，0.5H以上）', 4567);
INSERT INTO `os_patent_field_text` VALUES (3699, 'B:0.90至0.98%(重量),', 4567);
INSERT INTO `os_patent_field_text` VALUES (3700, 'GA:0.60至1.10%质量,', 4567);
INSERT INTO `os_patent_field_text` VALUES (3701, '1.测定长方体烧结片的长度、宽度和高度', 4567);
INSERT INTO `os_patent_field_text` VALUES (3702, '2.测定实际体积', 4567);
INSERT INTO `os_patent_field_text` VALUES (3703, '3.实际体积与长高宽乘积的差=缺口体积', 4567);
INSERT INTO `os_patent_field_text` VALUES (3704, '4.与预定值进行比较', 4567);
INSERT INTO `os_patent_field_text` VALUES (3705, '在主相晶界中，抑制过渡金属富相（R-T-Ga相）的生成，生成R-Ga-Cu相，得到具有更高HcJ的R-T-B系烧结磁体。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3706, '成型模具分割成2部分以上，具有侧壁。成型取向后将侧壁拆除，将成型体取出烧结。成型中的填充和取向在不同的地方进行。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3707, '减少重稀土元素使用量，通过热处理的方式提高矫顽力', 4567);
INSERT INTO `os_patent_field_text` VALUES (3708, '能够比以往更高效率地制造小型且薄型的烧结磁体片。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3709, '更有效地在磁体的两侧端面4边进行R倒角', 4567);
INSERT INTO `os_patent_field_text` VALUES (3710, 'HDDR合金块上扩散重金属，并粉碎，烧结。平均粒径小于1um且在粒界均匀地分布着富含稀土的相，从而均匀地形成了具有大粒界宽度的两个粒子界。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3711, 'B:0.80〜0.87質量%、', 4567);
INSERT INTO `os_patent_field_text` VALUES (3712, 'Ga:0.5〜0.8質量%、', 4567);
INSERT INTO `os_patent_field_text` VALUES (3713, '降低了矫顽力和耐候性的偏差，提高了安定性，高效率地制备高保磁力和优异耐候性的含稀土元素的铁合金粉末。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3714, '矫顽力相对于B量的变化变化较小，并且磁体具有高的剩磁和矫顽力', 4567);
INSERT INTO `os_patent_field_text` VALUES (3715, '磁体表面附近的二颗粒晶界变厚，磁体内部的二颗粒晶界也能够变厚', 4567);
INSERT INTO `os_patent_field_text` VALUES (3716, 'R1-T1-AX合金烧结体表面与至少一部分R2-GA-Cu基合金接触,450度-600度真空或者惰性气体热处理。即使通过表面磨削也不会受到损害矫顽力', 4567);
INSERT INTO `os_patent_field_text` VALUES (3717, '0.20≦x≦0.70', 4567);
INSERT INTO `os_patent_field_text` VALUES (3718, '含重金属元素的合金粉末粒子与磁体混合，回转摇动，热处理。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3719, '烧结磁体的多个表面均匀而没有废物', 4567);
INSERT INTO `os_patent_field_text` VALUES (3720, '使其充分扩散改善矫顽力', 4567);
INSERT INTO `os_patent_field_text` VALUES (3721, '涂覆装置涉及，磁体顺次横向通过，均匀涂覆', 4567);
INSERT INTO `os_patent_field_text` VALUES (3722, '具有高耐腐蚀性和低应力而无需添加CO。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3723, '更高的量产效率进行扩散处理', 4567);
INSERT INTO `os_patent_field_text` VALUES (3724, '可以获得稳定的高HcJ。另外，即使R-T-B烧结磁体材料具有容易缺失的形状，也能得到降低裂纹及缺口产生的效果。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3725, '控制B、Ga、Cu、Fe、Ni的配比', 4567);
INSERT INTO `os_patent_field_text` VALUES (3726, 'B:0.88质量%以上,0.92质量%以下,', 4567);
INSERT INTO `os_patent_field_text` VALUES (3727, 'Ga:0.60质量%或更多,1.10质量%或更低,', 4567);
INSERT INTO `os_patent_field_text` VALUES (3728, '提供一种从含有轻稀土元素和重稀土元素的处理对象物中溶解重稀土元素的方法，作为溶剂提取方法的替代技术。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3729, '可以得到比常规更高的加工精度,并且不会降低生产率,并提供一种优选地用于形状处理方法及其方法的处理装置。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3730, '稀土-过渡金属基合金被压碎,平均粒度为50μm以下，氧含量为0.1~10质量%。之后在含氧量为5~15体积%的惰性气体中进行气流式分级。磁特性提高。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3731, '粉碎铁磁合金粉末时，含有磷酸的有机溶剂的pH设定为1.5或更大,8.0或更小,有机溶剂中的磷酸浓度为0.1重量%或更高,20%(体积)或更小,并且磷醇盐为0.001摩尔/有机溶剂中的浓度/ 0.001 mol /加入超过10mol / l或更低', 4567);
INSERT INTO `os_patent_field_text` VALUES (3732, '在加热后,可以在室温下抑制矫顽力的劣化,', 4567);
INSERT INTO `os_patent_field_text` VALUES (3733, '抑制加热后室温下矫顽力的降低。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3734, 'B:0.89至0.95质量%,Ga:0.3至0.7%(重量)', 4567);
INSERT INTO `os_patent_field_text` VALUES (3735, '硼酸盐融化复合氧化物，酸中溶解，加入沉淀剂，得到稀土元素的沉淀物，分离。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3736, '溶液萃取法的替代法', 4567);
INSERT INTO `os_patent_field_text` VALUES (3737, '防止剥离，HcJ可以获得改善的效果', 4567);
INSERT INTO `os_patent_field_text` VALUES (3738, 'B:0.80至0.99质量%,', 4567);
INSERT INTO `os_patent_field_text` VALUES (3739, 'Ga:0至0.8质量%,', 4567);
INSERT INTO `os_patent_field_text` VALUES (3740, 'Pr和Ga几乎不向主相中扩散而是通过晶界进行扩散。Pr的存在促进了晶界扩散，结果，能够使Pr和Ga扩散至磁体内部的深处。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3741, 'B:0.80质量%以上,0.90质量%或更低,', 4567);
INSERT INTO `os_patent_field_text` VALUES (3742, 'GA:0.1质量%以上,0.8质量%或更低,', 4567);
INSERT INTO `os_patent_field_text` VALUES (3743, '在不使用不损害改善效果的重稀土元素的情况下也具有高矫顽力。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3744, '减少缺损的发生，高量产效率', 4567);
INSERT INTO `os_patent_field_text` VALUES (3745, '抑制逆磁区的核产生和晶体畸变的产生，能够制造高性能的稀土-铁-氮类磁体粉末;成本降低。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3746, '减少了萃取剂用量，减小设备，减少分析轻稀土元素和重稀土元素的比例的工作量。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3747, 'H.cJ改善，含有重质稀土元素RH的粉末颗粒层可以均匀地施加到R-T-B基烧结磁体的整个表面而无需有效废物。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3748, 'B:0.85质量%以上,0.93重量%或更低,', 4567);
INSERT INTO `os_patent_field_text` VALUES (3749, 'GA:0.20质量%以上,0.70质量%或更低,', 4567);
INSERT INTO `os_patent_field_text` VALUES (3750, '含有PR-GA合金的粉末颗粒层可以均匀地施加到R-T-B基烧结磁体的表面而没有有效废物。HcJ改善', 4567);
INSERT INTO `os_patent_field_text` VALUES (3751, '减少存在于磁体表面的RH的量并且使氟几乎不扩散到磁体内部、使RH有效地扩散到磁体内部', 4567);
INSERT INTO `os_patent_field_text` VALUES (3752, '减少了重稀土元素的含量，同时具有高的Br和高的HcJ', 4567);
INSERT INTO `os_patent_field_text` VALUES (3753, '将具有还原作用的RLM1M2合金粉末和可以通过再循环过程产生的RH碳酸酯粉末用作RH扩散源,因此可以有效地利用稀有资源并降低成本。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3754, '将具有还原作用的RLM1M2合金粉末和可以通过再循环过程产生的草酸盐粉末用作RH扩散源,因此可以有效地利用稀有资源并降低成本。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3755, '0.85質量%以上、且つ0.93質量%以下のBと、', 4567);
INSERT INTO `os_patent_field_text` VALUES (3756, '0.20質量%以上、且つ0.70質量%以下のGaと', 4567);
INSERT INTO `os_patent_field_text` VALUES (3757, '将具有还原作用的RLM1M2合金的粉末与可以通过循环过程在具有改善H cJ的高效果的RH氟化物中生成的RH化合物的粉末混合。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3758, '尽可能减少重稀土含量，同时提高矫顽力', 4567);
INSERT INTO `os_patent_field_text` VALUES (3759, 'Ga:0.20质量%以上,0.75%或更低,', 4567);
INSERT INTO `os_patent_field_text` VALUES (3760, '可以减少提取剂和有机溶剂的使用量以及使装置小型化；减轻处理对象中轻稀土元素和重稀土元素含量比的分析等工序上的作业负担。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3761, '实现H cJ的改善和耐腐蚀性的改善', 4567);
INSERT INTO `os_patent_field_text` VALUES (3762, '提高H cJ', 4567);
INSERT INTO `os_patent_field_text` VALUES (3763, 'B:0.870〜0.899大量的%,', 4567);
INSERT INTO `os_patent_field_text` VALUES (3764, 'GA:0.2至0.7%质量,', 4567);
INSERT INTO `os_patent_field_text` VALUES (3765, 'B:0.84至0.92%(重量),', 4567);
INSERT INTO `os_patent_field_text` VALUES (3766, 'Ga:0.3至0.7%(重量),', 4567);
INSERT INTO `os_patent_field_text` VALUES (3767, '改善了磁体内部以及磁体表面附近的矫顽力,并且可以通过表面研磨来保护磁体,以调节磁体尺寸。 它不会显着削弱改善磁力的效果,不需要重稀土元素,并且可以表现出高矫顽力。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3768, '在Pt(PA)的气氛中进行热处理', 4567);
INSERT INTO `os_patent_field_text` VALUES (3769, '化合物均匀地存在于磁铁表面', 4567);
INSERT INTO `os_patent_field_text` VALUES (3770, '产生主磁通量的位置无论是内径侧还是外径侧，易制作具有极各向异性取向的烧结体。加工成品率良好，并可减少在获得烧结体之前的工序。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3771, '矫顽力提高，涂布重稀土元素RH的粉末颗粒更均匀', 4567);
INSERT INTO `os_patent_field_text` VALUES (3772, '磁铁表层到内部300μm，主相中央结晶区与结界处Pr/Nd不同，从表面到内部Ga含量逐渐降低。在降低了BH用量的同时，提高Hcj和Br', 4567);
INSERT INTO `os_patent_field_text` VALUES (3773, '提供一种在含有稀土元素的铁磁体合金粉的表面上形成含有氧化铬的膜的带膜磁体合金粉的制造方法。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3774, '氧化物酸化后，盐酸中溶解（调节PH=3.5~7.5），稀土元素生成氢氧化物沉淀，通入氧化处理过程中产生的二氧化碳，生成稀土碳酸盐。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3775, '氧化物酸化后，盐酸中溶解（调节PH=7.5以上），稀土元素生成氢氧化物沉淀，通入氧化处理过程中产生的二氧化碳，生成稀土碳酸盐。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3776, '提供一种扩散源，该扩散源尽量不使用Dy、Tb等重稀土元素（RH），而提高R-T-B烧结磁体的高矫顽磁力（HcJ）和残余磁通量密度（Br）的降低抑制等磁体特性。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3777, '通过对扩散进行热处理，调整晶粒的大小，抑制磁性偏差的同时提高R-T-B烧结磁体的HcJ', 4567);
INSERT INTO `os_patent_field_text` VALUES (3778, '较少的Dy、Tb来改进R-T-B烧结磁体的HcJ，因此可以用于制造要求高矫顽力的稀土烧结磁体。本公开还可以应用于将除重稀土元素RH以外的其他金属元素从表面扩散到稀土烧结磁体。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3779, 'B:0.73mmas%或更多0.96质量%或更低,', 4567);
INSERT INTO `os_patent_field_text` VALUES (3780, 'GA:0.1质量%或更高1.0质量%或更低,', 4567);
INSERT INTO `os_patent_field_text` VALUES (3781, '添加Ga合金，通过热处理扩散法将Dy扩散到R-T-B烧结磁体中，在减少重稀土元素的使用量的同时提高矫顽力', 4567);
INSERT INTO `os_patent_field_text` VALUES (3782, '使用GA合​​金，减少重稀土元素的用量的同时提高矫顽力，生产高剩磁密度烧结磁体', 4567);
INSERT INTO `os_patent_field_text` VALUES (3783, '制备合金粉末，在减少重稀土元素的含量的同时提高矫顽力', 4567);
INSERT INTO `os_patent_field_text` VALUES (3784, '添加金属元素M（Al、Ga、Cu中选择的一种以上）制成PR-GA合金粉末，通过烧结扩散的工艺，降低重金属元素含量的同时提升矫顽力', 4567);
INSERT INTO `os_patent_field_text` VALUES (3785, '通过Zr、Hf等替代元素M1部分替代RFe12化合物的R元素，从而减少了稀土元素的量并保持饱和磁化强度', 4567);
INSERT INTO `os_patent_field_text` VALUES (3786, '将R2 -Ga-Ni合金与烧结磁体进行热处理，达到减少重稀土元素的含量的同时提高矫顽力', 4567);
INSERT INTO `os_patent_field_text` VALUES (3787, '添加金属元素M（选自Al,Ga和Cu的一个或多个），减少RH的使用量的同时提高矫顽力', 4567);
INSERT INTO `os_patent_field_text` VALUES (3788, '通过添加金属元素M（其是选自Al,Ga和Cu,R的一种或多种），不使用Dy等重稀土元素RH的情况下，提高R-T-B类烧结磁铁的HcJ的技术', 4567);
INSERT INTO `os_patent_field_text` VALUES (3789, '通过制备具有主相和一种或多个副相的稀土磁体合金，高效地获得提高了磁性和热稳定性的各向异性烧结磁粉', 4567);
INSERT INTO `os_patent_field_text` VALUES (3790, '从含硼的稀土元素的氧化物中制造含硼的稀土元素的草酸盐，还无需成本', 4567);
INSERT INTO `os_patent_field_text` VALUES (3791, '湿处理过程中抑制合金表面被氧化；使用乙二醇作为清洗剂来减少显著合金的氧的量', 4567);
INSERT INTO `os_patent_field_text` VALUES (3792, 'R-M合金粉末放置并扩散到RTB类烧结磁铁。在R-M合金粉末的粒子表面上形成R-OH层（氢氧化膜层），则可以抑制金属积累的产生。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3793, '通过超声波滴落熔融金属的方法，制造出具有良好质量细粒尺寸的金属粉末', 4567);
INSERT INTO `os_patent_field_text` VALUES (3794, '通过添加R2-M合金粉末，降低重稀土元素用量的同时提升矫顽力', 4567);
INSERT INTO `os_patent_field_text` VALUES (3795, '添加R2-Ga-Cu-Co合金，矫顽力增加的同时降低Dy的含量', 4567);
INSERT INTO `os_patent_field_text` VALUES (3796, '添加R-T-GA合金，降低RH的含量的同时提高磁体矫顽力', 4567);
INSERT INTO `os_patent_field_text` VALUES (3797, '通过添加PR-GA合金粉末，减少重稀土元素如Dy的同时提高磁体矫顽力', 4567);
INSERT INTO `os_patent_field_text` VALUES (3798, '通过热处理加工合金粉末与磁体，增强磁体矫顽力的同时减少重稀土的使用', 4567);
INSERT INTO `os_patent_field_text` VALUES (3799, 'B:0.85-0.91质量%,', 4567);
INSERT INTO `os_patent_field_text` VALUES (3800, 'GA:0.2-0.7质量%,', 4567);
INSERT INTO `os_patent_field_text` VALUES (3801, '低B高Ga', 4567);
INSERT INTO `os_patent_field_text` VALUES (3802, '能够从至少含有铁、钴和镓的处理物中回收镓，同时抑制钴的溶出', 4567);
INSERT INTO `os_patent_field_text` VALUES (3803, '可以在抑制钴的混合量的同时从至少含有铁,钴和镓的被处理物中回收镓。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3804, '形成稳定的喷射聚焦流，微细且粒径分布良好的金属粉末。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3805, '实现高的接合强度并且即使不使用Dy和Tb也具有高的Br和高的HcJ', 4567);
INSERT INTO `os_patent_field_text` VALUES (3806, '以良好的收率得到高性能的稀土过渡金属磁铁粉末,以低成本制造高性能的稀土过渡金属磁铁粉末', 4567);
INSERT INTO `os_patent_field_text` VALUES (3807, '提高收集效率', 4567);
INSERT INTO `os_patent_field_text` VALUES (3808, '抑制生锈', 4567);
INSERT INTO `os_patent_field_text` VALUES (3809, '减少重稀土元素，制造具有高Br和高HcJ的磁体', 4567);
INSERT INTO `os_patent_field_text` VALUES (3810, '高Hcj、HK和低RH', 4567);
INSERT INTO `os_patent_field_text` VALUES (3811, '由于R-Ga合金不易粉碎，通过将熔融裹在主合金上然后进行粉碎工艺得到含有R-Ga合金的粉末', 4567);
INSERT INTO `os_patent_field_text` VALUES (3812, 'B:0.84质量%以上0.92质量%以下，', 4567);
INSERT INTO `os_patent_field_text` VALUES (3813, 'Ga:0.3质量%以上1.0质量%以下，', 4567);
INSERT INTO `os_patent_field_text` VALUES (3814, '降低重稀土使用量的同时提高磁体矫顽力', 4567);
INSERT INTO `os_patent_field_text` VALUES (3815, '减少杂质并且可以将镓回收为液态金属', 4567);
INSERT INTO `os_patent_field_text` VALUES (3816, '良好地清洁效果', 4567);
INSERT INTO `os_patent_field_text` VALUES (3817, '提高粉末回收效率', 4567);
INSERT INTO `os_patent_field_text` VALUES (3818, '提高生产率', 4567);
INSERT INTO `os_patent_field_text` VALUES (3819, '在抑制Dy含量的同时保持了高Br和高HcJ', 4567);
INSERT INTO `os_patent_field_text` VALUES (3820, 'B:0.80-0.93质量%,', 4567);
INSERT INTO `os_patent_field_text` VALUES (3821, 'Ga:0.15-1.0质量%', 4567);
INSERT INTO `os_patent_field_text` VALUES (3822, '尽可能少地使用重稀土元素RH,并且在高温(例如100℃)下矫顽力H高。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3823, 'B:0.85质量%以上,0.91质量%或更低,', 4567);
INSERT INTO `os_patent_field_text` VALUES (3824, 'GA:0.35质量%以上,0.75%(重量)或更低,', 4567);
INSERT INTO `os_patent_field_text` VALUES (3825, '降低重稀土元素的使用量且具有高的Br和高的HcJ', 4567);
INSERT INTO `os_patent_field_text` VALUES (3826, '能够提供一种降低重稀土元素的使用量且具有高的Br和高的HcJ的R－T－B系烧结磁体的制造方法。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3827, '降低了RH的含量并且具有高HcJ和高Hk的R－T－B系烧结磁体', 4567);
INSERT INTO `os_patent_field_text` VALUES (3828, 'HcJ 和高H k / H cJ', 4567);
INSERT INTO `os_patent_field_text` VALUES (3829, 'B:0.80mass%或更多1.20质量%或更低,GA:0.05mmas%或更多0.5mass%或更低,', 4567);
INSERT INTO `os_patent_field_text` VALUES (3830, '提供降低Tb的使用量并且具有高Br和高HcJ的R－T－B系烧结磁体的制造方法', 4567);
INSERT INTO `os_patent_field_text` VALUES (3831, 'B：0.80mass％以上1.20mass％以下；', 4567);
INSERT INTO `os_patent_field_text` VALUES (3832, 'Ga：0.05mass％以上1.0mass％以下(', 4567);
INSERT INTO `os_patent_field_text` VALUES (3833, '使用稀土烧结环磁体可以在转子中减小涡流的产生', 4567);
INSERT INTO `os_patent_field_text` VALUES (3834, '通过在扩散工艺中增加加热的时间来使扩散更深，减少重稀土的使用', 4567);
INSERT INTO `os_patent_field_text` VALUES (3835, '减少重稀土元素RH的使用量，通过热处理扩散到烧结体表面，提高矫顽力', 4567);
INSERT INTO `os_patent_field_text` VALUES (3836, '能够在小空间中有效地供给工作的供给方法', 4567);
INSERT INTO `os_patent_field_text` VALUES (3837, '具有高矫顽力而无需使用RH如铽Tb和Dy', 4567);
INSERT INTO `os_patent_field_text` VALUES (3838, '使用R2-Al-Cu合金的同时提高矫顽力并减少重质稀土元素含量', 4567);
INSERT INTO `os_patent_field_text` VALUES (3839, 'RH为选自Tb、Dy和Ho中的至少1种，RH的含量为RL－RH－M系合金整体的13mass％以上23mass％以下；RL为轻稀土元素中的至少1种并且必须包含选自Nd、Pr和Ce中的至少1种，RH为选自Tb、Dy和Ho中的至少1种，M为选自Cu、Ga、Fe、Co、Ni和Al中的至少1种', 4567);
INSERT INTO `os_patent_field_text` VALUES (3840, '容易地去除焊接在扩散板上的粘附物，抑制生产率的恶化', 4567);
INSERT INTO `os_patent_field_text` VALUES (3841, '抑制了与扩散合金（Dy和Tb）的氧化和氢氧化相关的有效重稀土元素的损失，有可能获得具有高Br和高HcJ的R-T-B烧结磁体。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3842, '高效地制造具有基于R-T-B系烧结磁铁的方法', 4567);
INSERT INTO `os_patent_field_text` VALUES (3843, 'B:0.80mass%-1.20mass%', 4567);
INSERT INTO `os_patent_field_text` VALUES (3844, 'Ga：0.20mass%-0.80mass%', 4567);
INSERT INTO `os_patent_field_text` VALUES (3845, '通过热处理，在减少重稀土元素使用量的同时还能增强磁体的矫顽力', 4567);
INSERT INTO `os_patent_field_text` VALUES (3846, '扩散法提高矫顽力', 4567);
INSERT INTO `os_patent_field_text` VALUES (3847, 'B:0.85-0.91质量%', 4567);
INSERT INTO `os_patent_field_text` VALUES (3848, 'Ga:0.3-0.7质量%', 4567);
INSERT INTO `os_patent_field_text` VALUES (3849, '在低温下具有高Br并且在室温下具有高Hk/HcJ的R-T-B烧结磁体的制造方法', 4567);
INSERT INTO `os_patent_field_text` VALUES (3850, '通过热处理，降低重稀土的使用量的同时提高矫顽力', 4567);
INSERT INTO `os_patent_field_text` VALUES (3851, '使烧结体接近所述目标值，抑制烧结体的尺寸变化，提高了材料的利用效率', 4567);
INSERT INTO `os_patent_field_text` VALUES (3852, '能够提高扩散材料的利用效率', 4567);
INSERT INTO `os_patent_field_text` VALUES (3853, '烧结后进行机械加工所需的时间大大缩短', 4567);
INSERT INTO `os_patent_field_text` VALUES (3854, '不依赖钴(Co)和/或(Dy)提高Hcj', 4567);
INSERT INTO `os_patent_field_text` VALUES (3855, '提高磨削效率', 4567);
INSERT INTO `os_patent_field_text` VALUES (3856, '粉碎后平均粒度2.0μm以上且4.5μm或更小；烧结磁体的氧气含量为1000ppm以上且3500ppm或更小', 4567);
INSERT INTO `os_patent_field_text` VALUES (3857, '浆料可以被均匀地具有降低的密度变化到模具的空间供给。因此,能够抑制粉末压块的密度不均匀和取向紊乱,能够抑制裂纹和裂缝由此产生的发生,它可以稳定地以高得到磁特性成为生产。', 4567);
INSERT INTO `os_patent_field_text` VALUES (3858, '提高磁体的耐腐蚀性', 4567);
INSERT INTO `os_patent_field_text` VALUES (4607, '分离和提取稀土成分1111', 4565);
INSERT INTO `os_patent_field_text` VALUES (4608, '111', 4565);
INSERT INTO `os_patent_field_text` VALUES (4609, '11', 4565);
INSERT INTO `os_patent_field_text` VALUES (4610, '22', 4565);
INSERT INTO `os_patent_field_text` VALUES (5359, '解决什么技术问题', 4580);
INSERT INTO `os_patent_field_text` VALUES (5360, '的微发光二极管阵列的转印方法，其特征在于，所述步骤2中所形成的接受凸起(21)的材料为氮化硅、或氧化硅', 4580);
INSERT INTO `os_patent_field_text` VALUES (5361, 'hdsixb', 4580);
INSERT INTO `os_patent_field_text` VALUES (5362, '', 4580);
INSERT INTO `os_patent_field_text` VALUES (5363, '在量子点液晶显示器中，如何实现量子点封装LED背光的Cd含量小于100mmp或者使用无Cd材料，又使器件具有较好的光效。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5364, '假设Transfer移动速度较快，则可能导致在移动过程中Micro LED等器件从Transfer上脱落，而为了提高Transfer过程中的稳定性，则又可能牺牲Transfer的速度继而影响产能。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5365, 'Transfer从提供零部件的衬底上吸附起例如LED、集成电路芯片(IC)等微米尺寸的零部件时，其实际是克服地球重力和衬底的吸附力，而在移动和转移的过程中，也时刻受到地球重力影响；假设Transfer移动速度较快，则可能导致在移动过程中Micro LED等器件从Transfer上脱落，而为了提高Transfer过程中的稳定性，则又可能牺牲Transfer的速度继而影响产能。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5366, '如何在Micro LED显示面板的制作过程中，保护Micro LED及其下方的驱动基板，并改善Micro LED阵列的发光效果。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5367, '如何在转印之后直接进行微发光二极管的工作状况检测，降低产品检测及修复的难度，提升产品良率。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5368, '为了增加出光，现有技术中对P型半导体层进行粗化处理，以减少光的全反射，增加出光效率。但是由于P型半导体层相对薄，厚度在200nm以内，粗化会导致P型半导体材料的晶体质量下降，从而使得所述Micro LED芯片的漏电流增加。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5369, '对于小尺寸的液晶显示器，背光中LED灯的间距小，无法做到有效的多分区，而且分区之间光线的串扰较大，其HDR效果较差。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5370, '蓝光微型LED灯与荧光转换层的组合方式中，荧光转换层的材料通常选用氮化物、硅酸盐、氟化物、硫化物、铝酸盐等荧光粉，而荧光粉的尺寸处于微米级别，即尺寸较大，容易造成颜色分布不均的问题；另外，红色像素或绿色像素中也会有部分蓝光残留。在这种情况下，即使采用红色或绿色彩色滤光片，也会有部分蓝光残留，而且增加彩色滤光片的使用，不仅会损失光能，还会增加显示器的功耗。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5371, '显示装置因设置屏下摄像头导致摄像区不能显示影像，用户体验较差的技术问题', 4580);
INSERT INTO `os_patent_field_text` VALUES (5372, '有效解决MiniLED基板在切割制程中膜面受损及金属板腐蚀的问题', 4580);
INSERT INTO `os_patent_field_text` VALUES (5373, '有效解决MiniLED基板在切割制程中膜面受损及金属板腐蚀的问题，有效的保护MiniLED基板表面不受水汽腐蚀，避免膜面划伤及静电风险，同时确保切割制程可行性。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5374, 'micro-LED面板亮度不均匀', 4580);
INSERT INTO `os_patent_field_text` VALUES (5375, 'MicroLED巨量转移工艺复杂、定位不精确的问题', 4580);
INSERT INTO `os_patent_field_text` VALUES (5376, '拼接显示面板中的拼接缝隙处呈现接缝暗带，影响显示效果的问题', 4580);
INSERT INTO `os_patent_field_text` VALUES (5377, '目前液晶显示面板等平板显示面板中的子像素的尺寸相对于微发光二极管的尺寸而言都是比较大的，若在相当于现有的子像素区域大小的面积空间对应填充一个小尺寸的微发光二极管，则会在各个子像素区域之间产生较大的空隙，造成纱门效应', 4580);
INSERT INTO `os_patent_field_text` VALUES (5378, '目前液晶显示面板等平板显示面板中的子像素的尺寸相对于微发光二极管的尺寸而言都是比较大的，若在相当于现有的子像素区域大小的面积空间对应填充一个小尺寸的微发光二极管，则会在各个子像素区域之间产生较大的空隙，造成纱门效应。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5379, '解决现有的透明显示屏中存在的间距较大，透光率较低的技术问题', 4580);
INSERT INTO `os_patent_field_text` VALUES (5380, '仅仅利用微发光二极管作为基本显示单元的微发光二极管显示器的色域很窄，显示效果较差', 4580);
INSERT INTO `os_patent_field_text` VALUES (5381, '现有转移技术中技术难点多、转移效率低的问题', 4580);
INSERT INTO `os_patent_field_text` VALUES (5382, '微发光二极管的密度极高，使得其存在散热不通畅', 4580);
INSERT INTO `os_patent_field_text` VALUES (5383, '透反射式液晶显示器的功耗较高', 4580);
INSERT INTO `os_patent_field_text` VALUES (5384, '提供一种背光模组及液晶显示装置，能够在实现区域亮度控制的同时有利于背光模组的轻薄化设计要求。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5385, '解决现有显示装置中相邻子像素之间容易发生光串扰、发光效率不高、水氧阻隔特性不佳等技术问题', 4580);
INSERT INTO `os_patent_field_text` VALUES (5386, '子像素之间很容易出现图像串扰', 4580);
INSERT INTO `os_patent_field_text` VALUES (5387, '无法实现单板(小片panel的背板)点亮进行点灯量测，若前制程出现线路划伤的断路等不良，在制程中段(cell段)无法实现拦捡', 4580);
INSERT INTO `os_patent_field_text` VALUES (5388, '无法实现单板(小片panel的背板)点亮进行点灯量测，若前制程出现线路划伤的断路等不良，在制程中段(cell段)无法实现拦捡，从而无法有效快速预警异常', 4580);
INSERT INTO `os_patent_field_text` VALUES (5389, 'ACF胶软化后再固化，经常发生溢胶，溢胶会影响会增加显示装置的宽度，不利于显示装置的窄边框化，且会影响显示装置在拼接显示装置中的应用', 4580);
INSERT INTO `os_patent_field_text` VALUES (5390, '提升微发光二极管管显示器的显示品质', 4580);
INSERT INTO `os_patent_field_text` VALUES (5391, '实现裸眼3D显示', 4580);
INSERT INTO `os_patent_field_text` VALUES (5392, '阳极为一个整体，微发光二级管修复时', 4580);
INSERT INTO `os_patent_field_text` VALUES (5393, '阳极为一个整体，微发光二级管修复时他的正常的微发光二极管', 4580);
INSERT INTO `os_patent_field_text` VALUES (5394, '阳极为一个整体，微发光二级管修复时他的正常的微发光二极管无法发光', 4580);
INSERT INTO `os_patent_field_text` VALUES (5395, '光源的利用率较低', 4580);
INSERT INTO `os_patent_field_text` VALUES (5396, 'Micro LED光源的利用率较低', 4580);
INSERT INTO `os_patent_field_text` VALUES (5397, '对于PDMS类传送头的微转印方式，由于PDMS膜层上的凸起结构往往通过光刻等技术手段制成，其特点在于制备完成后将很难改动，使得一种PDMS传送头上的凸起排列图案(Pattern)往往对应一种微器件(Micro Device)在接受衬底上的排布方式。那么当使用PDMS类传送头对Micro LED进行转移时，由于PDMS膜层的粘附力在各处都近似，使得一次转印的图案结构被确定以后，无法适应于其他的图案结构。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5398, '采用Micro LED作为光源，制备Micro LED彩色显示器，则需要大规模生产R/G/BLED chip，这个过程中LED chip的一致性偏离是一个必然现象。不同硅晶片(Wafer)生长出的LED chip很大概率处于不同的Bin级中，若直接将不同Bin级中的微发光二极管直接一次转印至阵列基板上，会导致了微发光二极管显示面器颜色和亮度的均匀性差。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5399, '半导体硅材料在弯曲时的脆性问题', 4580);
INSERT INTO `os_patent_field_text` VALUES (5400, '阳极为一个整体，微发光二级管修复时其他的正常的微发光二极管无法发光', 4580);
INSERT INTO `os_patent_field_text` VALUES (5401, 'Micro-LED一般为单色的，目前没有彩色的Micro-LED显示模组，如果要实现Micro-LED显示模组发彩色的光，则需要将不同颜色的Micro-LED批量、多次转运到电路基板上。然而，上述转运技术难度非常大，且精度上面更难以控制，产品良率非常差，无法量产。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5402, '在实际生产时，玻璃基板100在传送和工艺制程过程中，玻璃基板100远离柔性基板200的表面不可避免地会产生缺陷点600(defects)，例如划伤、腐蚀残留、脏物粘附等等，在进行激光剥离制程前的清洗制程并不能改善划伤、腐蚀残留，脏物也难以保证100％清理干净，缺陷点600无法消除。缺陷点600的存在会影响激光透过玻璃基板100，降低了玻璃基板100与柔性基板200的界面在对应缺陷点600位置处接受到的激光能量，导致该处的玻璃基板100与柔性基板200发生粘连而无法分离，使柔性显示装置在此处产生缺陷，极大地降低了柔性显示装置的良率。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5403, '拼接显示面板中设置边框而在显示画面上产生黑线', 4580);
INSERT INTO `os_patent_field_text` VALUES (5404, '静电吸附的吸附力较小，使得转移过程中容易损坏所述微型发光二极管，从而转移难度较大。并且，静电吸附的效率较低。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5405, '透明的液晶显示屏技术成熟且成本低廉，是主流的透明显示屏。但透明显示屏中的偏光片和彩膜层都会影响透明显示面板的透光效果，降低了透明显示面板的光线穿透率。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5406, '现有方法需要LED的发光亮度很高，因此需要的电流非常大，而且随着显示产品刷新频率不断提高，每一帧的现实时间就会不断减少，这样占空比驱动更难以实现多灰阶等级的现实。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5407, '现有驱动方法需要LED的发光亮度很高，因此需要的电流非常大，而且随着显示产品刷新频率不断提高，每一帧的现实时间就会不断减少，这样占空比驱动更难以实现多灰阶等级的现实。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5408, '现有的屏下摄像头的方案，由于与摄像头对应位置的显示面板中未设置彩膜，导致在摄像头关闭时，该区域无法显示画面，降低了显示效果。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5409, '蓝光LED激发量子点材料，在能量转移的过程中，不可避免会存在大量的能量损失，如LED自身波导效应损失，量子点产生的光散射效应等，以及量子点材料自身的自吸收现象，使得光致光发光过程中的光损失过多，导致光的利用率不高。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5410, '如何简单快速的进行Micro LED巨量转移。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5411, '发光二极管焊接在基板上，但是基板的膜层的表面光滑，不利于所述发光二极管焊接到所述基板的所述膜层的所述表面上。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5412, '目前基于液晶显示屏(liquid crystal display，LCD)或者有机发光二极管(Organic Light Emitting Diode，OLED)的透明显示器被大量研究，而透明显示器在很应用场景使用局限且显示效果欠佳。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5413, '采用传统驱动电路，难以精确控制显示面板中LED的驱动电流，显示精度低。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5414, 'LED面光源背光显示器包括LED面光源及显示面板，所述LED面光源与显示面板LED通过柔性电路板组件(Flexible Printed Circuit Assembly，FPCA)形成电性连接，而面光源的LED驱动IC通常设置在柔性电路板组件上，柔性电路板组件需要额外设置一个连接器以使LED驱动IC与LED面光源上的LED芯片电性连接，这无疑压缩了柔性电路板组件的空间，且LED驱动IC与LED面光源上的LED芯片电性连接的走线难度较高，上述问题大大增加了制作成本。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5415, '现有的micro-LED显示器件的技术中，还存在着micro-LED的制作过程中需要采用巨量直接转移或是巨量间接转移的技术，但这两种技术的工艺都比较复杂且成本高的问题，急需改进。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5416, '存在一种直下式背光模组，其采用阵列式LED面光源，该直下式背光模组包括LED基板100、LED发光芯片200、荧光膜300、扩散片400及增亮膜片500，由于LED光接近朗伯型分布，中心亮度较高，周围亮度较低，在直下式背光模组发光过程中极易产生亮度不均的现象。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5417, '在整个制备工艺过程中，通常以锡膏作为焊接材料，基于锡膏的芯片焊接，通常是将锡膏用钢网印刷的方式来获得预设的图案，且采用钢网印刷的方法起印刷质量较大程度受钢网制作质量及寿命的影响，随着印刷次数的增加，钢网的特性会发生变化，从而导致锡膏的图案化受影响。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5418, '如何使micro LED转移过程中省去图案化模具或图案化转移头，以实现大面积快速转移。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5419, '传统技术方案在实现高速动态画面时，容易发生拖尾行为，这个不仅与液晶的响应时间有关系，同时与人本身的视觉残像有关系。因此，当前普遍通过倍频实现不同区块显示来改善动态画面的残影，但是这样需要极大地压缩背光的扫描时间，给显示系统带来不稳定性风险。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5420, '由于开孔工艺的原因，无法确保所述白油开孔与所述Mini-LED200充分适配，即：所述白油开孔的孔缘与Mini-LED200的边缘之间具有空隙400，光线会从所述空隙400漏出，从而降低光线的利用率。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5421, '传统的显示背板检测方式通常采用人员研判后才能确定缺失是否对点灯有影响，背板检测过程复杂，且背板缺陷检测率低。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5422, '中小型显示器的边框的存在会导致拼接显示面板的显示区域出现条形的拼接缝，降低显示品质。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5423, '在目前的技术中，一般的显示面板中的玻璃基板的主动驱动Mini-LED或Micro-LED采用两个薄膜晶体管和一个电容的架构，其中采用a-Si/IGZO/LPTS等半导体晶体管作为驱动元件，因此需要复杂的半导体制作工艺流程，且制造成本较高。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5424, '常规背沟道TFT背板技术采用6道光罩的技术，其中第二金属层使用金属钼/金属铜作为LED绑定平面，ITO作为COF绑定保护层，防止金属铜氧化。但是，该制程存在制程温度较低，钝化层成膜温度提高及后续钝化层制程的热退火制程容易造成金属铜电极氧化甚至脱落，影响电极导电性能。此外，金属氧化物半导体所需热处理温度随材料成分变化，部分氧化物需要高温制程，该技术不能更好的兼容。若为适应高温制程，使用金属钼/金属钛/金属镍单质或其合金等材料作为第二金属层的上层隔绝层，虽具备良好的热稳定性，且抗氧化能力强，可以提高制程温度，但是，该合金与LED绑定所需锡膏结合力较差，影响绑定效果，导致LED的绑定结果较差。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5425, '现有转移技术方案目前转移制程多，制程复杂，对原材料的需求量较大，制作成本高昂。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5426, '降低微发光二极管显示器制作难度，拓宽微发光二极管显示器的色域，增强微发光二极管显示器的显示效果', 4580);
INSERT INTO `os_patent_field_text` VALUES (5427, '如何将Micro LED转移在接收基板的弧面或球面等其他曲面上而制备出显示阵列', 4580);
INSERT INTO `os_patent_field_text` VALUES (5428, '转印方式不仅结构复杂，而且效率低', 4580);
INSERT INTO `os_patent_field_text` VALUES (5429, '达到高像素数目(PPI)显示时，会导致微发光二极管的密度极高，使得其存在散热不通畅的问题', 4580);
INSERT INTO `os_patent_field_text` VALUES (5430, '微发光二极管的电极邦定难度', 4580);
INSERT INTO `os_patent_field_text` VALUES (5431, '微发光二极管的电极绑定过程复杂，邦定难度大，可靠性低', 4580);
INSERT INTO `os_patent_field_text` VALUES (5432, '如何提升发光二极管芯片的出光效率，减少光线在面光源内部的损耗已成为提高面光源光效的首要问题', 4580);
INSERT INTO `os_patent_field_text` VALUES (5433, '转移微发光二极管的效率和良率均有较大的问题，大大降低微发光二极管显示面板的良率', 4580);
INSERT INTO `os_patent_field_text` VALUES (5434, '解决柔性基板与玻璃基底的剥离时，柔性基板界面层因吸收大量激光能量导致柔性膜及器件的损坏问题', 4580);
INSERT INTO `os_patent_field_text` VALUES (5435, '解决显示布线较为困难的问题', 4580);
INSERT INTO `os_patent_field_text` VALUES (5436, '解决动态分区背光的某一分区出现异常，替换该分区内所有mini-LED使得成本增加的问题。', 4580);
INSERT INTO `os_patent_field_text` VALUES (5437, '提供一种基于LED微缩化技术的显示面板，基于LED微缩化技术的显示面板的布线以及结构均处于盲区', 4580);
INSERT INTO `os_patent_field_text` VALUES (5438, 'MicroLED', 4580);
INSERT INTO `os_patent_field_text` VALUES (5439, 'MicroLED转移到玻璃基板上，', 4580);
INSERT INTO `os_patent_field_text` VALUES (5440, '巨量的MicroLED精确转移到玻璃基板上，', 4580);
INSERT INTO `os_patent_field_text` VALUES (5441, '巨量的MicroLED精确转移到玻璃基板上，转移次数多，转移过程所需时间长的问题', 4580);
INSERT INTO `os_patent_field_text` VALUES (5442, '采用了什么技术手段', 4581);
INSERT INTO `os_patent_field_text` VALUES (5443, '', 4581);
INSERT INTO `os_patent_field_text` VALUES (5444, '通过在反光杯壳内部的底面设置蓝光芯片结构和红光芯片，并在蓝光芯片上设置绿光量子点荧光粉层，有效地减少了量子点封装LED背光的Cd含量，实现了量子点封装LED背光满足RoHS和高色域覆盖的目', 4581);
INSERT INTO `os_patent_field_text` VALUES (5445, '在反光杯壳内部的底面设置蓝光芯片结构和红光芯片，并在蓝光芯片上设置绿光量子点荧光粉层。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5446, '在传送头转移微部件的过程中，微部件承载于传送头的上方。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5447, '本发明的微发光二极管阵列基板的封装结构，基板1上的光阻保护层2与UV树脂微透镜41共同起到保护微发光二极管31、及基板1的作用，且所述UV树脂微透镜41可对微发光二极管31发出的光线进行光路调节，同时所述UV树脂微透镜阵列也有利于通过计算机模拟进行预设计，从而通过对UV树脂微透镜41的厚度及尺寸的调整可得到需要的光型分布，进而能够改善微发光二极管阵列基板的发光效果。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5448, '所述微发光二极管阵列3包括数个阵列排布的微发光二极管31；所述光阻保护层2对应所述数个微发光二极管31的位置设有数个阵列排布的过孔21，所述数个微发光二极管31分别位于所述数个过孔21当中；  [0037]每一过孔21内均填充有一个上表面呈凸起状的UV树脂微透镜41；每一UV树脂微透镜41分别覆盖相应过孔21内的微发光二极管31，从而所有的UV树脂微透镜41构成UV树脂微透镜阵列。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5449, '所述微发光二极管阵列3包括数个阵列排布的微发光二极管31；所述光阻保护层2对应所述数个微发光二极管31的位置设有数个阵列排布的过孔21，所述数个微发光二极管31分别位于所述数个过孔21当中；每一过孔21内均填充有一个上表面呈凸起状的UV树脂微透镜41；每一UV树脂微透镜41分别覆盖相应过孔21内的微发光二极管31，从而所有的UV树脂微透镜41构成UV树脂微透镜阵列。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5450, '一种微发光二极管阵列基板的封装结构，包括基板、设于所述基板上的微发光二极管阵列、设于所述基板上方并覆盖所述微发光二极管阵列的保护层；所述微发光二极管阵列包括数个阵列排布的微发光二极管；所述基板的上表面上、或所述保护层的下表面上设有数个凹槽，所述数个微发光二极管容置于所述数个凹槽中。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5451, '本发明的微发光二极管显示面板通过连接电极7连接顶电极13和第二电极触点44，可在微发光二极管200转印前直接形成顶电极13，在微发光二极管200转印后可直接进行微发光二极管200的点亮测试，在微发光二极管200确定正常发光后再继续制作保护层16等其他结构。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5452, '在所述Micro LED芯片与薄膜晶体管(TFT)电连接时，使所述P型半导体靠近TFT，N型半导体设于P型半导体背向TFT的一侧，并对所述N型半导体背向所述P型半导体的一面处理为粗糙面。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5453, '直下式背光模组的光源包括呈矩阵阵列排布在印刷电路板上的多个micro-LED芯片，任意相邻的两个micro-LED芯片之间设置有遮光单元，遮光单元可以限制micro-LED芯片的出光角度。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5454, '显示装置，包括：光学膜层，包括一通孔；显示面板，设于所述光学膜层一侧的表面；所述显示面板包括一透明区，与所述通孔相对设置；摄像头，包括镜头，插入至所述通孔内，且朝向所述透明区；以及若干LED芯片，环绕所述镜头均匀设于所述通孔内，且设于所述摄像头与所述透明区之间。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5455, '当LED芯片13通电时，摄像区100开启背光模式，此时感光芯片113等采光器件处于非工作状态，即不采光，因为摄像区100的透明区14内依旧设有阵列基板、彩膜基板以及液晶层等相关器件，能实现发光显示的功能，摄像区100能正常显示，同时显示区200处于正常显示状态，即实现全面屏效果。显示装置，包括：光学膜层，包括一通孔；显示面板，设于所述光学膜层一侧的表面；所述显示面板包括一透明区，与所述通孔相对设置；摄像头，包括镜头，插入至所述通孔内，且朝向所述透明区；以及若干LED芯片，环绕所述镜头均匀设于所述通孔内，且设于所述摄像头与所述透明区之间。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5456, '当LED芯片13通电时，摄像区100开启背光模式，此时感光芯片113等采光器件处于非工作状态，即不采光，因为摄像区100的透明区14内依旧设有阵列基板、彩膜基板以及液晶层等相关器件，能实现发光显示的功能，摄像区100能正常显示，同时显示区200处于正常显示状态，即实现全面屏效果。当LED芯片13断电时，摄像区100关闭背光模式，此时感光芯片113等采光器件处于工作状态，即开始采光，通过LCD驱动调整摄像区100对应液晶(即第三透明部143)全部转变为高透过率状态，搭配第二透明部142和第四透明部144的高透过率设计，外界光线可透过显示面板22进入摄像区100下方对应的摄像头11，实现采光功能，此时显示区200依旧正常显示，由于摄像头11与侧入光学膜层21间有阻光膜片12，因此显示区200的背光不会影响摄像头11的正常采光，摄像头11能正常工作。具体地，显示装置，包括：光学膜层，包括一通孔；显示面板，设于所述光学膜层一侧的表面；所述显示面板包括一透明区，与所述通孔相对设置；摄像头，包括镜头，插入至所述通孔内，且朝向所述透明区；以及若干LED芯片，环绕所述镜头均匀设于所述通孔内，且设于所述摄像头与所述透明区之间。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5457, '显示装置，包括：光学膜层，包括一通孔；显示面板，设于所述光学膜层一侧的表面；所述显示面板包括一透明区，与所述通孔相对设置；摄像头，包括镜头，插入至所述通孔内，且朝向所述透明区；以及若干LED芯片，环绕所述镜头均匀设于所述通孔内，且设于所述摄像头与所述透明区之间。因此，当LED芯片通电时，摄像头变成显示区域，全面实现屏幕，而当LED芯片断电时，摄像头正常工作，摄像头区域非显示。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5458, '将成膜完成后的MiniLED背光基板，进行成盒制程；', 4581);
INSERT INTO `os_patent_field_text` VALUES (5459, '将成膜完成后的MiniLED背光基板，进行成盒制程；将成盒后的所述MiniLED背光基板进行切割', 4581);
INSERT INTO `os_patent_field_text` VALUES (5460, '将成膜完成后的MiniLED背光基板，进行成盒制程；将成盒后的所述MiniLED背光基板进行切割，通过增加成盒的制程，', 4581);
INSERT INTO `os_patent_field_text` VALUES (5461, '将成膜完成后的MiniLED背光基板，进行成盒制程；将成盒后的所述MiniLED背光基板进行切割，从而通过增加成盒的制程，有效保护膜面。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5462, '将成膜完成后的MiniLED背光基板，进行成盒制程；将成盒后的所述MiniLED背光基板进行切割，制备出小板MiniLED背光基板；从而通过增加成盒的制程，有效保护膜面。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5463, '将成膜完成后的MiniLED背光基板，进行成盒制程；将成盒后的所述MiniLED背光基板进行切割，制备出小板MiniLED背光基板；将所述小板MiniLED背光基板进行去盒处理；从而通过增加成盒的制程，有效保护膜面。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5464, '将成膜完成后的MiniLED背光基板，进行成盒制程；将成盒后的所述MiniLED背光基板进行切割，制备出小板MiniLED背光基板；将所述小板MiniLED背光基板进行去盒处理；将去盒后的所述小板MiniLED背光基板进行打包，从而通过增加成盒的制程，有效保护膜面。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5465, '通过改变可显示区域的外层遮光层图案，形成VDD环绕导电线和VSS环绕导电线', 4581);
INSERT INTO `os_patent_field_text` VALUES (5466, '通过改变可显示区域的外层遮光层图案，形成VDD环绕导电线和VSS环绕导电线。通过将显示区域最外围的一圈或几圈像素结构进行特殊的设计，将最外围的所述像素结构的遮光层图形进行分割，且分割成第一遮光层、VDD功能层以及VSS功能层。并将上述由所述遮光层分隔出来的所述VDD功能层以及VSS功能层分别连接起来，形成VDD环绕导电线和VSS环绕导电线，并通过覆晶薄膜的旁路通道和覆晶薄膜相连接起来。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5467, '在基底的LED芯片阵列的电极上设置第一导电粘接剂层和第一软磁材料层，在目标电路基板上设置有第二导电粘接剂层阵列和第二软磁材料层阵列，同时第一导电粘接剂层和第一软磁材料层分别与第二导电粘接剂层和第二软磁材料层一一对应，第一软磁材料层和第二软磁材料层的居里温度低于将LED芯片阵列和目标电路基板进行绑定的热压工艺的加热温度', 4581);
INSERT INTO `os_patent_field_text` VALUES (5468, '在相邻的两个所述发光基板之间设置所述发光部', 4581);
INSERT INTO `os_patent_field_text` VALUES (5469, '在相邻的两个所述发光基板之间设置所述发光部。具体地：至少两发光基板，每两相邻的所述发光基板之间具有间隙；至少一发光部，每一所述发光部对应于相应的所述间隙。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5470, '提供了一种微发光二极管显示面板，通过将在基板上设置阵列排布的多个显示区，并在各个显示区内均匀排布多个微发光二极管', 4581);
INSERT INTO `os_patent_field_text` VALUES (5471, '利用高透过率的玻璃基板，使金属走线均匀分散在面板内', 4581);
INSERT INTO `os_patent_field_text` VALUES (5472, '利用高透过率的玻璃基板，使金属走线均匀分散在面板内。具体地：显示面板包括阵列基板、设置于所述阵列基板上的多个像素单元；所述阵列基板包括玻璃衬底、设置于所述玻璃衬底上的多个驱动控制单元和金属走线；每一所述驱动控制单元与每一所述像素单元对应连接，所述金属走线与所述驱动控制单元和所述像素单元连接；所述金属走线设置于所述阵列基板的不同膜层上。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5473, '提供了一种微发光二极管显示面板，其包括：基板、设于所述基板上的阵列排布的多个微发光二极管、覆盖所述多个微发光二极管的透明的封装层、以及设于所述封装层上的量子点层，通过在封装层上增设量子点层，利用微发光二极管发出的短波长光激发量子点层发光，从而使微发光二极管和量子点层共同组成微发光二极管显示面板的基本显示单元', 4581);
INSERT INTO `os_patent_field_text` VALUES (5474, '提供了一种微发光二极管阵列基板，包括玻璃基板，所述玻璃基板上依次形成有栅极、绝缘层，在绝缘层上形成有半导体层以及像素电极，在半导体层上设有源极、漏极，所述漏极与相邻的像素电极连接，在像素电极上覆盖有一层第一导电层，第一导电层上连接有微发光二极管。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5475, '提供了一种透反射式液晶显示器，包括液晶显示面板和背光源；所述液晶显示面板划分成多个相互交错的透射区和反射区；所述背光源包括背光源基板、及设于所述背光源基板上的多个微发光二极管阵列；所述多个微发光二极管阵列对应分布于所述液晶显示面板的多个透射区下方的背光源基板上，所述背光源通过所述多个微发光二极管阵列向液晶显示面板的多个透射区提供背光', 4581);
INSERT INTO `os_patent_field_text` VALUES (5476, '转移设备具有支架，支架包括至少两个吸附臂，吸附臂的张开角度可以调节，通过可以调节的吸附臂来抓取承载基板上的微型发光二极管，并转移至阵列基板上', 4581);
INSERT INTO `os_patent_field_text` VALUES (5477, '设计导光板在第一区域设置有衍射光栅，并将第二区域邻近衍射光栅的一侧设置为入光面，第二区域的导光板可视为侧入光式导光板', 4581);
INSERT INTO `os_patent_field_text` VALUES (5478, '在若干miniLED灯的侧面以及任意两个miniLED灯之间的间隙内制备出黑色涂层，所述黑色涂层内的吸光材料能吸收部分向侧边发射的蓝光，所述黑色涂层内的金属微粒能反射部分向侧边发射的蓝光', 4581);
INSERT INTO `os_patent_field_text` VALUES (5479, '在若干miniLED灯的侧面以及任意两个miniLED灯之间的间隙内制备出黑色涂层，所述黑色涂层内的吸光材料能吸收部分向侧边发射的蓝光，所述黑色涂层内的金属微粒能反射部分向侧边发射的蓝光；黑色涂层内含有疏水材料，能有效实现防水功能', 4581);
INSERT INTO `os_patent_field_text` VALUES (5480, '在发光二极管的驱动侧设置独立或整面的形式的抗反射结构', 4581);
INSERT INTO `os_patent_field_text` VALUES (5481, '检测微型发光二极管背光模组的检测治具，检测治具包括至少一检测单元，每一检测单元包括检测发光二极管和两第一检测探针，两第一检测探针的第一端部连接于检测发光二极管的正极和负极', 4581);
INSERT INTO `os_patent_field_text` VALUES (5482, '使用共晶焊接层焊接驱动基板与柔性绑定件，代替现有技术中使用的ACF胶', 4581);
INSERT INTO `os_patent_field_text` VALUES (5483, '通过在微发光二极管显示面板上增设层叠设置的一维金属光栅结构和二维金属光栅结构;', 4581);
INSERT INTO `os_patent_field_text` VALUES (5484, '通过在微发光二极管显示面板上增设层叠设置的一维金属光栅结构和二维金属光栅结构;相邻的两个1/4波片区的快轴相互垂直', 4581);
INSERT INTO `os_patent_field_text` VALUES (5485, '通过在微发光二极管显示面板上增设层叠设置的一维金属光栅结构和二维金属光栅结构;相邻的两个二维金属光栅的快轴相互垂直;', 4581);
INSERT INTO `os_patent_field_text` VALUES (5486, '通过在微发光二极管显示面板上增设层叠设置的一维金属光栅结构和二维金属光栅结构;相邻的两个二维金属光栅的快轴相互垂直;一维金属光栅的偏振方向与二维光栅的快轴之间的夹角均为45度', 4581);
INSERT INTO `os_patent_field_text` VALUES (5487, '出光面设置微透镜封装阵列层(4)对所述微发光二极管(2)进行封装保护，并将位于基板(1)的各个不同位置上的微发光二极管(2)发出的光线折射到不同的空间方向上，形成分别对应观看者左眼和右眼的两个视点，从而实现3D显示', 4581);
INSERT INTO `os_patent_field_text` VALUES (5488, '微发光二极管显示面板的阳极被划分为多个相互间隔的电极块，各个电极块通过连接线电性连接成一体，每一个电极块上对应设置一个微发光二极管', 4581);
INSERT INTO `os_patent_field_text` VALUES (5489, '在衬底基板上设置凹槽，并且凹槽内表面覆盖反光电极', 4581);
INSERT INTO `os_patent_field_text` VALUES (5490, '每个所述子像素区域中设有凹槽，所述凹槽内表面覆盖有相互绝缘的第一反光电极和第二反光电极', 4581);
INSERT INTO `os_patent_field_text` VALUES (5491, '一种微发光二极管阵列的转印方法，在接受基板上设置数个接受凸起，微发光二极管被置于接受基板上相应的接受凸起上', 4581);
INSERT INTO `os_patent_field_text` VALUES (5492, '每个所述子像素区域中设有凹槽，所述凹槽内表面覆盖有相互绝缘的第一反光电极和第二反光电极，每个所述微发光二极管设置于一个所述凹槽中，所述微发光二极管的一管脚与所述第一反光电极连接，另一管脚与所述第二反光电极连接，所述第一反光电极和所述第二反光电极将所述微发光二极管发出的光线反射回所述凹槽', 4581);
INSERT INTO `os_patent_field_text` VALUES (5493, '通过将LED器件的P-型硅材料制作成均匀分布的P-型硅微米柱，然后在P-型硅微米柱之间的间隙填充软模高分子树脂，形成一层包括P-型硅微米柱与软模高分子树脂的复合膜层，再进行LED器件的制备', 4581);
INSERT INTO `os_patent_field_text` VALUES (5494, '可采用静电力控制的转印模板,仅对需要放下的LED进行静电力的解除；另一种是非静电力控制的转印模板，通过对阵列基板的局部加热，来控制仅加热融化对应区域的位置LED被转移到阵列基板上。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5495, '采用静电力控制的转印模板,仅对需要放下的LED进行静电力的解除；另一种是非静电力控制的转印模板，通过对阵列基板的局部加热，来控制仅加热融化对应区域的位置LED被转移到阵列基板上。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5496, '红光量子点发光介质、绿光量子点发光介质以及蓝光量子点发光介质依次循环设置，每个红光量子点发光介质、每个绿光量子点发光介质以及每个蓝光量子点发光介质分别间隔对应设置在每个微型LED灯的上端。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5497, '将Micro-LED的阵列中蓝光Micro-LED先后与不同的颜色的光敏溶液接触，在接触第一颜色光敏溶液后，点亮第一预设蓝光Micro-LED，此时被点亮的第一预设蓝光Micro-LED200发蓝光，使其与第一颜色光敏溶液发生作用，反应聚成透镜，进而使得第一预设蓝光Micro-LED能够发出第一颜色的光。在接触第二颜色光敏溶液后，点亮第二预设蓝光Micro-LED，此时被点亮的第二预设蓝光Micro-LED发蓝光，使其与第二颜色光敏溶液发生作用，也使其反应聚成透镜，使得第二预设蓝光Micro-LED能够发出第二颜色的光。在此基础上，再与剩下的没有点亮，且没有与第一颜色或第二颜色溶液反应聚成透镜的蓝光Micro-LED。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5498, '通过在透明刚性衬底的至少一侧上设置透明的光散射层，得到透明刚性基板，接着在透明刚性基板的一侧制作柔性基板。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5499, '一种显示装置在拼接显示面板上方设置电致发光显示面板，电致发光显示面板的电致发光层在拼接显示面板上的正投影与拼接显示面板的边框重叠，且电致发光层包括多个电致发光器件，工作时，拼接显示面板的多个子显示面板与电致发光显示面板的多个电致发光器件同时发光从而显示画面', 4581);
INSERT INTO `os_patent_field_text` VALUES (5500, '所述微型发光二极管的转移过程中，所述微型发光二极管与转移头之间通过所述磁流变液进行物理连接，增加所述微型发光二极管与转移头之间的作用力。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5501, '使用彩色背光光源为透明显示面板的提供背光，代替了现有技术中的白色背光结构和彩膜层。同时，本申请使用统一配相的液晶分子作为显示显示面板的液晶层，代替了现有技术中的液晶分子和偏光片。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5502, '多个光阀开关，其设置于所述多个发光单元上方，每一所述光阀开关分别与一所述LED发光单元相对以用于调节对应所述LED发光单元的发光面积；驱动控制模块，其用于控制输出扫描信号给每一所述开关管的控制端以及输出光栅控制信号给所述光阀开关，进而通过控制所述开关管的占空比以及与所述开关管所对应的LED发光单元的发光面积来调节所述LED发光单元的灰阶。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5503, '背光模块，其上设置有区域控制组件，所述区域控制组件的位置与所述透光区域的位置对应，所述区域控制组件包括三色灯和导光件；所述导光件设于所述三色灯的上方；由于在透光区域设置三色灯，因而在摄像头不工作时可以通过控制三色灯，实现透光区域的画面显示。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5504, '在微发光二极管器件远离阵列基板一侧的表面设置多个向微发光二极管器件内部凹陷的微腔结构，并通过设置于微发光二极管器件上的量子点膜层填充进微腔结构，将量子点分散到微发光二极管器件表面上的各个微腔结构中，防止量子点的聚集，同时又将量子点限制在微发光二极管器件内部，包含有量子点的多个微腔结构可以增强微发光二极管器件与量子点之间的能量转移效应。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5505, '通过在转移基板上设置一层热失黏胶，并通过特定的图案化的加热头，对所述热失黏胶进行选择性的加热，使得热失黏胶部分预定的区域粘性大大降低，而未加热的区域粘性保持不变，从而可选择性地拾取微型发光二极管芯片并转移至目标基板上。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5506, '所述基板包括基底和设置在所述基底上的铜膜层以及对所述铜膜层的表面进行粗糙化处理。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5507, '第一导电玻璃基板和第二导电玻璃基板相对设置，并形成一个密闭空间；第一取向膜设置于第一导电玻璃基板远离第二导电玻璃基板的一侧；第二取向膜设置于第二导电玻璃基板远离第一导电玻璃基板的一侧；密闭空间内填充有液晶分子和二色性染料分子的混合液；其中，当在第一取向膜和第二取向膜之间施加驱动电压时，二色性染料分子随液晶分子垂直偏转，所述液晶盒为透明态；当在第一取向膜和第二取向膜之间未施加驱动电压时，二色性染料分子随液晶分子平行于第一导电玻璃基板排列，所述液晶盒为非透明态。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5508, '基于第一薄膜晶体管的栅极连接第一节点，源极连接第二节点，漏极用于接入电源高电压；第二薄膜晶体管的栅极用于接入第N行像素的扫描信号，源极连接第一节点，漏极用于接入数据信号；第一电容的一端连接第一节点，另一端连接第三节点；第三薄膜晶体管的栅极用于接入第N+1行像素的扫描信号，源极连接第三节点，漏极连接第二节点；第二电容的一端连接第三节点，另一端连接第四节点；第四薄膜晶体管的栅极用于接入第N+2行像素的扫描信号，源极连接第三四节点，漏极连接第二节点；第三电容的一端连接第四节点，另一端连接第二节点；发光二极管的阳极连接第二节点，阴极用于接入电源低电压，进而能够实现采用较低输出电压分辨率的源极芯片进行精细的电流控制。本申请能够通过控制第二薄膜晶体管、第三薄膜晶体管和第四薄膜晶体管的通断，进行两级电容放电及各个电容(第一电容、第二电容和第三电容)之间电荷分配。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5509, '一种液晶显示器，包括MINI LED基板、设于所述MINI LED基板一侧面的数个MINI LED芯片、设于所述MINI LED基板另一侧面的MINI LED驱动IC以及覆盖所述数个MINI LED芯片的荧光膜，所述MINI LED驱动IC驱动所述数个MINILED芯片发光。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5510, '一种液晶显示器，包括MINI LED基板、设于所述MINI LED基板一侧面的数个MINI LED芯片、设于所述MINI LED基板另一侧面的MINI LED驱动IC以及覆盖所述数个MINI LED芯片的荧光膜，所述MINI LED驱动IC驱动所述数个MINILED芯片发光，不需要将MINI LED驱动IC设置在柔性电路板组件上，节省了一个连接器，避免压缩柔性电路板组件的设计空间，同时有效减小MINI LED驱动IC与所述数个MINI LED芯片电性连接的走线难度。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5511, 'S50，将沉积有所述LED单晶膜层的所述衬底基板与所述显示背板进行对位，使得所述LED单晶膜层一侧正对于设置有金属点的所述介电层一侧；S60，分别向所述衬底基板背离所述LED单晶膜层一侧、所述显示背板背离所述介电层一侧施压，使得所述LED单晶膜层与所述介电层完全贴合，绑定在一起；S70，将所述衬底基板从所述LED单晶膜层与所述显示背板形成的整体上剥离下来；S80，对所述LED单晶膜层背离所述显示背板的一侧进行黄光和刻蚀制程，形成micro-LED阵列。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5512, '提供的一种面光源背光模组，包括Mini LED基板、间隔设于所述Mini LED基板上的数个Mini LED芯片以及覆盖所述数个Mini LED芯片的荧光膜，通过在所述荧光膜远离所述数个Mini LED芯片一侧的表面设有数个微结构，使所述数个Mini LED可以实现更大角度的出光，改善面光源背光模组的混光均匀性，达到节省光学膜片即可实现均匀混光的目的', 4581);
INSERT INTO `os_patent_field_text` VALUES (5513, '通过在第二基底上设置有反光通孔，并将微发光二极管设置于所述反光通孔内部，利用反光通孔两侧光滑的侧壁对光线的反射提取作用。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5514, '通过采用光阻材料结合传统的光刻工艺制备图案化的光阻层，制备图案化的焊接材料层，取代传统钢网印刷制备图案化焊接材料层。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5515, '通过将衬底基板上阵列设置的Micro LED转移至拉伸基板，然后通过对拉伸基板做横向和纵向均匀拉伸，使得相邻MicroLED之间的横向和纵向距离均达到预定的目标值，最后再将间距排列成目标值的Micro LED与阵列基板进行键合，从而完成Micro LED的转移过程。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5516, '通过抖动值的比较结果，确定动态画面的残影发生区域，配置无发光亮度的背光数据至与残影发生区域相对应的第二背光子区。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5517, '在本申请的微型发光二极管灯板中，所述空隙内设有所述第一反射层。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5518, '当所述信号控制器提供电压给所述导电线路电路板时，所述导电线路电路板传输所述电压给所述待检测背板上的各个所述LED发光元件并点亮各个所述LED发光元件，所述信号控制器根据各个所述LED发光元件的亮暗程度来判定所述待检测背板相对应位置的品质。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5519, '将TFT电路与扇出电路分别设置于阵列基板的相对两侧并通过阵列基板边缘的电连接部相连，同时遮光金属层与源漏极金属层共用一层金属薄膜。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5520, '将扫描晶体管和控制晶体管的功能集合到微型IC驱动芯片上，从而来代替一般的2T1C驱动架构。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5521, '通过在第二金属层上新增设一层第三金属层，所述第三金属层是由复合金属构成的，所述第三金属层的上层由金属铜构成，所述第三金属层的下层由金属铝/金属钼/金属钛或其金属合金构成。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5522, '减少了制程工艺以及对原材料的使用，且由于修复时所使用的Micro LED基板与一步转移时的Micro LED基板相同，从而规避不必要的良率损失。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5523, '所述Micro LED晶粒包括依次设置在第一基板上的一激光释放层、一弱化结构层以及一磊晶层；其中，所述弱化结构层包括靠近磊晶层一侧的空洞以及结构层。所述Micro LED基板包括多个设置在第一基板上的Micro LED晶粒。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5524, '在微发光二极管上增加红色滤光层', 4581);
INSERT INTO `os_patent_field_text` VALUES (5525, '采用白色微发光二极管加上红色滤光层，或者绿色微发光二极管加上红色光致发光层，或者蓝色微发光二极管加上红色光致发光层的方法呈现红色子像素', 4581);
INSERT INTO `os_patent_field_text` VALUES (5526, '通过两次微转印制程将微发光二极管转印到曲面基板上', 4581);
INSERT INTO `os_patent_field_text` VALUES (5527, '在转印模板的两侧设置', 4581);
INSERT INTO `os_patent_field_text` VALUES (5528, '通过温度调节进行微发光二极管的转印', 4581);
INSERT INTO `os_patent_field_text` VALUES (5529, '通过在栅极、源极、漏极、像素电极以及与微发光二极管的管脚连接的引线均采用石墨烯导电材料制备得到', 4581);
INSERT INTO `os_patent_field_text` VALUES (5530, '通过在像素凹槽内填充树脂粘合层，并将微发光二极管压入并固定到树脂粘合层中，同时通过连接电极将微发光二极管的底部的电极引导到微发光二极管的顶部，', 4581);
INSERT INTO `os_patent_field_text` VALUES (5531, '减少内部的回光损失，从整体上提升面光源的出光效率', 4581);
INSERT INTO `os_patent_field_text` VALUES (5532, '在发光二极管层上方加入允许蓝光穿透、反射红绿光的带通滤光片', 4581);
INSERT INTO `os_patent_field_text` VALUES (5533, '利用喷墨打印机中的特定喷头，将混合有微发光二极管单元的溶液滴入阵列基板上', 4581);
INSERT INTO `os_patent_field_text` VALUES (5534, '，在玻璃基底10的第一表面101均匀地涂覆光刻胶，以形成剥离层20。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5535, '，在玻璃基底10的第一表面101均匀地涂覆光刻胶，以形成剥离层20。，对切割后的所述玻璃基底10的与所述第一表面101相对的第二表面102进行曝光，以使所述剥离层20发生分解。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5536, '，在玻璃基底10的第一表面101均匀地涂覆光刻胶，以形成剥离层20。，对切割后的所述玻璃基底10的与所述第一表面101相对的第二表面102进行曝光，以使所述剥离层20发生分解。，将粘结有所述玻璃基底10的所述柔性显示面板置于显影液60中，以使所述柔性基板30因所述剥离层20发生溶解与所述玻璃基底10分离。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5537, '所述像素单元采用一种信号导线与所述驱动电路电性连接，所述驱动电路包括多个子驱动电路，构成所述驱动电路的多个所述子驱动电路依次排列设置形成行，多个所述子驱动电路形成的行位于相邻两行所述像素单元之间并与所述像素单元间隔开；每个所述子像素单元通过一条信号导线与所述子驱动电路连接，所述子驱动电路通过所述信号导线传输图像驱动信号至所述子像素单元，用于驱动所述子像素单元进行图像显示；', 4581);
INSERT INTO `os_patent_field_text` VALUES (5538, '所述像素单元采用一种信号导线与所述驱动电路电性连接，所述驱动电路包括多个子驱动电路，构成所述驱动电路的多个所述子驱动电路依次排列设置形成行，多个所述子驱动电路形成的行位于相邻两行所述像素单元之间并与所述像素单元间隔开；每个所述子像素单元通过一条信号导线与所述子驱动电路连接，所述子驱动电路通过所述信号导线传输图像驱动信号至所述子像素单元，用于驱动所述子像素单元进行图像显示。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5539, '将背光分区进一步分组，逐个打开每组电路的串联mini-LED组或并联mini-LED组，并检测输出电流，根据输出电流确认含有异常mini-LED的分组电路，并替换该分组电路中的mini-LED。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5540, '在第一基板上设置LED发光组件和阴极驱动电路，在第二基板上设置行信号线、列信号线以及补偿信号，', 4581);
INSERT INTO `os_patent_field_text` VALUES (5541, '在第一基板上设置LED发光组件和阴极驱动电路，在第二基板上设置行信号线、列信号线以及补偿信号。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5542, '述透光孔与所述透光区域正对。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5543, '一种微型发光二极管显示装置，包括基板、阵列设置在所述基板上表面且用于发出蓝光的微型发光二极管、设于所述微型发光二极管出光侧的黄色荧光粉层以及设于所述黄色荧光粉层出光侧的彩色滤光层，所述彩色滤光层包括红色滤光区域、绿色滤光区域以及透光区域，所述黄色荧光粉层表面间隔地开设有透光孔，所述透光孔与所述透光区域正对。', 4581);
INSERT INTO `os_patent_field_text` VALUES (5544, '技术功效是什么', 4582);
INSERT INTO `os_patent_field_text` VALUES (5545, '', 4582);
INSERT INTO `os_patent_field_text` VALUES (5546, '在减少了量子点封装LED背光的Cd含量的前提下，实现了量子点封装LED背光满足RoHS和高色域覆盖的目标。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5547, '在减少了量子点封装LED背光的Cd含量的前提下，能够实现量子点封装LED背光满足RoHS和高色域覆盖的目标，光效较好。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5548, '传送头对微部件的吸附不再需要克服重力的影响（此时是通过传送头对微部件的支撑力克服重力），继而在保证传送头对微部件稳定转移的情况下，可以对传送头进行快速移动，有效提高了传送头的转移良率和速率。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5549, '能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果，且方法简单易行。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5550, '能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5551, '能够在微发光二极管转印后直接进行微发光二极管的检测，降低产品检测及修复的难度，提升产品良率。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5552, '增加出光效率的同时，避免所述Micro LED芯片的漏电流的产生。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5553, '所述直下式背光模组应用于小尺寸的液晶显示器时，其提升显示器的HDR效果尤为明显。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5554, '光转换层中的量子点发光介质在胶水中可以混合均匀，不易沉降，从而可以呈现较佳的色彩效果；而且，量子点发光介质对于短波光的激发效率较佳，使得光转换效率高，从而有效提高光的利用率；另外，量子点发光介质的发射光谱半波宽很窄，温度稳定性好。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5555, '设置屏下摄像头可进一步提升显示装置的屏占比，当LED芯片断电时，摄像区处于采光状态，能正常拍摄，当LED芯片通电时，摄像区处于显示状态，增大显示区域面积的同时，提升用户的体验感', 4582);
INSERT INTO `os_patent_field_text` VALUES (5556, '高屏占比。具体地：设置屏下摄像头可进一步提升显示装置的屏占比，当LED芯片断电时，摄像区处于采光状态，能正常拍摄，当LED芯片通电时，摄像区处于显示状态，增大显示区域面积的同时，提升用户的体验感', 4582);
INSERT INTO `os_patent_field_text` VALUES (5557, '通过增加成盒的制程，可以有效的确保MiniLED背光基板的膜面受到保护，同时又可以避免水汽等进入大板，对金属的表面进行腐蚀。除此之外，由于是在合板的情况下进行的切割，机台不需要进行改造就能对应制程。而将框胶改成热熔胶，是为了在切割后可以更好的进行上板和下板的脱离，完成最终小板MiniLED背光基板的产出。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5558, '通过在显示区外围构造VDD环绕导电线和VSS环绕导电线，来降低显示面板的电阻，改善了显示面板的电压降问题，进而达到了改善显示面板亮度显示不均匀的问题，提升了micro-LED显示面板的显示品质。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5559, 'MicroLED巨量转移工艺简单易行，能够完成巨量转移释放需求。具体地：', 4582);
INSERT INTO `os_patent_field_text` VALUES (5560, 'MicroLED巨量转移工艺简单易行，能够完成巨量转移释放需求。具体地：进行巨量转移时，在磁场的作用下，由于软磁材料具有在外界磁场易磁化且矫顽力低的特点，能够实现第一导电粘接剂层和第二导电粘接剂层的精确对准连接，使得MicroLED巨量转移的定位精确；同时，由于软磁材料具有高磁导率的特点，采用热压工艺对LED芯片阵列和目标电路基板进行绑定时，第一软磁材料层和第二软磁材料层被加热使其温度超过居里温度，从而自动去磁，去磁后对通电电路无影响。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5561, '通过在相邻的两个所述发光基板之间设置所述发光部，减小了相邻的两个所述发光基板之间出现暗态视角的可能，提高了所述拼接显示面板的显示效果。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5562, '实现微发光二极管显示面板的高分辨率显示，并通过控制各个显示区内微发光二极管的数量，在消除纱门效应的同时有效控制生产成本，提升微发光二极管显示面板的市场竞争力。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5563, '利用高透过率的玻璃基板，使金属走线均匀分散在面板内，实现显示面板具有更高的光线透过率和有效提升显示品味。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5564, '扩大微发光二极管显示面板的色域，提升微发光二极管显示面板的显示品质', 4582);
INSERT INTO `os_patent_field_text` VALUES (5565, '通过在像素电极与微发光二极管之间覆盖一层导电层，使得微发光二极管处的热量能够经导电层传导至其他区域，从而提高散热能力。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5566, '保证了背光源发出的光只会在透射区投影位置上传播和射出，而不会在反射区投影位置上传播和射出，避免了背光源发出的光射向反射区被白白浪费掉，提高了背光源的利用率和光效率，降低了透反射式液晶显示器的功耗，进而达到节能省电的目的，提高了显示设备的续航能力。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5567, '提升转移效率，减小资源消耗', 4582);
INSERT INTO `os_patent_field_text` VALUES (5568, '通过衍射光栅将垂直方向的光引入侧入光式导光板，无需直下光式背光模组所需要的混光距离，从而能够在实现区域亮度控制的同时有利于背光模组的轻薄化设计要求。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5569, '提高光束的出光效率、', 4582);
INSERT INTO `os_patent_field_text` VALUES (5570, '提高光束的出光效率、能有效实现防水功能，提高显示装置的水氧阻隔特性，保证显示装置具有较佳的防水、抗光串扰以及高出光率等优势。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5571, '抗反射结构减小了发光二极管逆向发出的光线在阵列基板内的反射，从而达到防止图像串扰现象的发生。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5572, '在制程中段(cell段)实现拦捡异常，可以有效快速预警异常，避免造成批量性异常货，避免造成资源和成本损失。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5573, '避免了ACF胶溢胶的问题，能够达到窄边框的效果', 4582);
INSERT INTO `os_patent_field_text` VALUES (5574, '实现3D显示，充分发挥微发光二极管显示面板高分辨率、高亮度、和小型化的优势，实现高品质的3D显示', 4582);
INSERT INTO `os_patent_field_text` VALUES (5575, '简化微发光二极管3D显示装置结构的同时实现裸眼3D显示，降低生产成本，提升显示品质', 4582);
INSERT INTO `os_patent_field_text` VALUES (5576, '简化微发光二极管显示面板的修复过程，提升微发光二极管显示面板的修复的成功率，保证微发光二极管显示面板的修复效果。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5577, '提升光源利用率', 4582);
INSERT INTO `os_patent_field_text` VALUES (5578, '对于同一个传送头，通过改变数个接受凸起在接受基板上的排列方式，便可实现在接受基板上转印不同排列方式的微发光二极管阵列。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5579, '实现柔性的同时也能够节能', 4582);
INSERT INTO `os_patent_field_text` VALUES (5580, '通过在每个子像素单元中阵列排布有颜色相同且Bin级不同的微发光二极管晶粒，从而使不同色温、不同批次生产的同一颜色的微微发光二极管晶粒混合阵列排布在一起，通过多次转印，实现混合阵列排布，将不同Bin级的同一颜色的微微发光二极管晶粒分散在整个阵列基板中，能够有效改善微发光二极管显示面板的颜色和亮度的均称性。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5581, '光转换层20中的量子点发光介质在胶水中可以混合均匀，不易沉降，从而可以呈现较佳的色彩效果；而且，量子点发光介质对于短波光的激发效率较佳，使得光转换效率高，从而有效提高光的利用率；另外，量子点发光介质的发射光谱半波宽很窄，温度稳定性好。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5582, '本发明中的具有Micro-LED的阵列可以根据显示模组和终端的大小设置不同的规格，设置相应匹配数量的Micro-LED，实现发彩光的同时巧妙地避免了现有技术实现Micro-LED发彩色光需要批量转运的工序，进而大大提高产品的良率，保证产品的性能', 4582);
INSERT INTO `os_patent_field_text` VALUES (5583, '实现柔性基板和透明刚性基板之间的有效分离，提升产品良率，降低激光剥离制程对激光源能量波动的依赖性。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5584, '消除由于在拼接显示面板中设置边框而在显示画面上产生的黑线，提升显示效果，具有良好的产品品质', 4582);
INSERT INTO `os_patent_field_text` VALUES (5585, '增加所述微型发光二极管与转移头之间的作用力，进而防止所述微型发光二极管转移过程中的损坏，从而降低转移难度，并增加所述微型发光二极管的转移效率。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5586, '不需要将MINI LED驱动IC设置在柔性电路板组件上，节省了一个连接器，避免压缩柔性电路板组件的设计空间，同时有效减小MINI LED驱动IC与所述数个MINI LED芯片电性连接的走线难度，降低了制作成本。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5587, '防止所述微型发光二极管转移过程中的损坏，从而降低转移难度，并增加所述微型发光二极管的转移效率。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5588, '本申请的显示面板不需要设置偏光片和彩膜层即可实现正常的显示效果，消除了偏光片和彩膜层对光线的遮挡，极大的提高了透明显示面板的透光率，优化了透明显示屏的显示效果。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5589, '实现从两个维度相结合的方式来调节灰阶，其调节范围更广，具有实现更多等级的灰阶控制的有益效果，可以提高显示质量。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5590, '提高了显示效果。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5591, '减少光致发光过程中产生的光损失，提高光的利用率。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5592, '操作简便快速，且实现转移的设备制作简单，成本低廉。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5593, '转移方法操作简便快速，且实现转移的设备制作简单，成本低廉。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5594, '通过本揭示实施例能提升所述铜膜层的所述表面的粗糙度，利于所述次毫米发光二极管焊接到所述铜膜层的所述表面上。本揭示实施例还能降低所述次毫米发光二极管的基板制作成本，提升生产良率和提高所述次毫米发光二极管在所述铜膜层的所述表面上的焊锡抓力。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5595, '使得安装该液晶盒的透明显示装置既可以在非透明态态下能够更好的输出面板信息，也可以在透明态态下实现透明显示装置透明的效果，扩大了透明显示装置应用场景。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5596, '实现精确控制显示面板中LED的驱动电流，进一步提高了显示精度。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5597, '工艺简单，降低了生产成本，大大地提高了产品良率以及micro-LED显示器件的像素。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5598, '提高微发光二极管的光提取利用率。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5599, '改善面光源背光模组的混光均匀性，达到节省光学膜片即可实现均匀混光的目的。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5600, '制作的图案化的焊接材料层的精度更高，且无需钢网可以多次重复制作，提高了工艺的可靠性。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5601, '该方法无需制作图案化的模具或者图案化的转移头，生产周期缩短，制作成本降低；同时，采用拉伸基板拉伸来实现Micro LED的目标间距，可以满足不同Micro LED间距设计的需要，生产的灵活性更高。有效改进了现有Micro LED的转移方法。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5602, '改善动态画面的拖尾现象，同时由于未采用倍频技术，不会增加显示的不稳定性风险。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5603, '所述微型发光二极管灯板所述微型发光二极管灯板可以作为背光模组的背光源，具有节约能耗的优点。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5604, '有效避免光线从所述空隙漏出，从而提高了光线的利用率，极大地降低了光线的损失率。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5605, '所述检测方法可以有效的判定不良品，以及确定所述不良品的缺陷点位区域。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5606, '能够使显示区域更加靠近边框区，进一步获得无边框或窄边框的效果。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5607, '大大提升了工艺生产的生产效率，还有效的降低了制造成本。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5608, '本发明实施例所提供的新的microLED背板解决了第二金属层与锡膏结合力较差的问题，还减少了microLED显示面板的制程，降低了生产成本，大大提高了生产效率。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5609, '减少了制程工艺以及对原材料的使用，且由于修复时所使用的Micro LED基板与一步转移时的Micro LED基板相同，从而规避不必要的良率损失。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5610, '降低微发光二极管显示器制作难度，拓宽微发光二极管显示器的色域，增强微发光二极管显示器的显示效果', 4582);
INSERT INTO `os_patent_field_text` VALUES (5611, '制作曲面微发光二极管显示面板的显示像素阵列，进而用于实现曲面显示效果', 4582);
INSERT INTO `os_patent_field_text` VALUES (5612, '制得了具有曲面显示效果的曲面微发光二极管显示面板', 4582);
INSERT INTO `os_patent_field_text` VALUES (5613, '结构简单，而且转印效率高', 4582);
INSERT INTO `os_patent_field_text` VALUES (5614, '使得微发光二极管处的热量能够经被传导至其他区域，从而提高散热能力', 4582);
INSERT INTO `os_patent_field_text` VALUES (5615, '能够降低微发光二极管的电极邦定难度，提升微发光二极  管的电极邦定的可靠', 4582);
INSERT INTO `os_patent_field_text` VALUES (5616, '减少MiniLED装置内部的回光损失，从整体上提升面光源的出光效率', 4582);
INSERT INTO `os_patent_field_text` VALUES (5617, '，降低了所述微发光二极管的转移难度，提高了微发光二极  管显示面板的良率', 4582);
INSERT INTO `os_patent_field_text` VALUES (5618, '不会损伤所述柔性基板30，避免了激光剥离所述柔性基板30时，激光烧蚀过程中产生的大量热对所述柔性基板30的损伤，提高了柔性显示器的生产良率。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5619, '用作图像显示的像素单元仅采用一种信号导线与驱动电路电性连接，即可完成开关信号与图形驱动信号的接收，从而进行图像显示，从而较大程度减少了像素单元布线难度，', 4582);
INSERT INTO `os_patent_field_text` VALUES (5620, '显示面板中用作图像显示的像素单元仅采用一种信号导线与驱动电路电性连接，即可完成开关信号与图形驱动信号的接收，从而进行图像显示，从而较大程度减少了像素单元布线难度，并且为像素单元提供更多的布局空间，提高显示面板', 4582);
INSERT INTO `os_patent_field_text` VALUES (5621, '显示面板中用作图像显示的像素单元仅采用一种信号导线与驱动电路电性连接，即可完成开关信号与图形驱动信号的接收，从而进行图像显示，从而较大程度减少了像素单元布线难度，并且为像素单元提供更多的布局空间，提高显示面板的分辨率。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5622, '弥补了单一分区重工处理时面临的替换巨量mini-LED的不足，节约了制作成本。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5623, '实现微型LED显示面板及微型LED显示器的功能，且可以通过行信号线、列信号线以及补偿信号来实现对发光组件的发光开关控制以及光通量控制。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5624, '本发明的微型发光二极管均发出蓝光，通过将其一次性地转印在基板上，然后利用该微型发光二极管激发黄色荧光粉层，再与出光方向上的彩色滤光层配合，即可实现彩色显示的目的，减少了发光二极管转移次数，工艺制程更加简化，降低了Micro LED的转移技术难度。', 4582);
INSERT INTO `os_patent_field_text` VALUES (5625, '', 4584);
INSERT INTO `os_patent_field_text` VALUES (5626, '技术原理在说明书第0044段处。', 4584);
INSERT INTO `os_patent_field_text` VALUES (5627, '技术原理：', 4584);
INSERT INTO `os_patent_field_text` VALUES (5628, '技术原理：说明书第0038段。', 4584);
INSERT INTO `os_patent_field_text` VALUES (5629, '技术原理：本发明的微发光二极管阵列基板的封装结构，基板1上的光阻保护层2与UV树脂微透镜41共同起到保护微发光二极管31、及基板1的作用，且所述UV树脂微透镜41可对微发光二极管31发出的光线进行光路调节，同时所述UV树脂微透镜阵列也有利于通过计算机模拟进行预设计，从而通过对UV树脂微透镜41的厚度及尺寸的调整可得到需要的光型分布，进而能够改善微发光二极管阵列基板的发光效果。', 4584);
INSERT INTO `os_patent_field_text` VALUES (5630, '技术原理：通过在反光杯壳30内部的底面设置蓝光芯片结构10和红光芯片20，并在蓝光芯片11上设置绿光量子点荧光粉层15，由于没有像现有技术那样在蓝光芯片11上同时设置绿光量子点荧光粉层15和红光量子点荧光粉层，没有红光量子点荧光粉层吸收绿光量子点荧光粉层15产生的绿光，因此绿光量子点荧光粉层15没有受到损耗，不需要补充绿光量子点荧光粉，因此没有增加Cd含量，这就有效地减少了量子点封装LED背光的Cd含量，实现了量子点封装结构满足RoHS和高色域覆盖的目标。另外，本发明在蓝光芯片结构10上部的耐高温聚合物膜层13上设置有纳米压印微结构，该纳米压印徽结构的折射率大于所述防硫化硅胶层40的折射率，且小于所述耐高温聚合物膜层13的折射率，有效地提高了蓝光芯片结构10的蓝光和绿光的出光效率。', 4584);
INSERT INTO `os_patent_field_text` VALUES (5631, '技术原理：1.。2.。', 4584);
INSERT INTO `os_patent_field_text` VALUES (5632, '技术原理：1.。2.每一凹槽51的槽壁上均设有反射层52，通过对微发光二极管31发出的光进行反射，从而可以有效提高微发光二极管阵列基板的光出射效率。', 4584);
INSERT INTO `os_patent_field_text` VALUES (5633, '技术原理：1.所述保护层2起到封装盖板的作用。2.每一凹槽51的槽壁上均设有反射层52，通过对微发光二极管31发出的光进行反射，从而可以有效提高微发光二极管阵列基板的光出射效率。', 4584);
INSERT INTO `os_patent_field_text` VALUES (5634, '技术原理：本发明的微发光二极管显示面板通过连接电极7连接顶电极13和第二电极触点44，可在微发光二极管200转印前直接形成顶电极13，在微发光二极管200转印后可直接进行微发光二极管200的点亮测试，在微发光二极管200确定正常发光后再继续制作保护层16等其他结构，能够降低产品检测及修复的难度，提升产品良率。', 4584);
INSERT INTO `os_patent_field_text` VALUES (5635, '技术原理：本发明提供的所述显示面板，在所述Micro LED芯片与薄膜晶体管(TFT)电连接时，使所述P型半导体靠近TFT，N型半导体设于P型半导体背向TFT的一侧，并对所述N型半导体背向所述P型半导体的一面处理为粗糙面。由于所述N型半导体的厚度大于所述P型半导体的厚度，因此，对所述N型半导体进行粗化时，不会影响所述N型半导体材料的晶体质量，进而实现了增加出光效率的同时，避免所述Micro LED芯片的漏电流的产生。', 4584);
INSERT INTO `os_patent_field_text` VALUES (5636, '技术原理：本发明实施例提供的直下式背光模组，其中的光源包括呈矩阵阵列排布在印刷电路板上的多个micro-LED芯片，任意相邻的两个micro-LED芯片之间设置有遮光单元，遮光单元可以限制micro-LED芯片的出光角度。由此，在进行局部调光的分区驱动时，分区之间的光线可以有效地相互间隔，减小了背光分区之间光线的串扰，提升了显示器的HDR效果。', 4584);
INSERT INTO `os_patent_field_text` VALUES (5637, '巨量转移要求是把微米级别的、几十万甚至上百万的LED(发光二极管)晶圆芯片精确地从施主晶圆上分裂出来有序地转移至目标基板上。', 4584);
INSERT INTO `os_patent_field_text` VALUES (5638, 'LCD', 4584);
INSERT INTO `os_patent_field_text` VALUES (5639, 'MiniLED', 4584);
INSERT INTO `os_patent_field_text` VALUES (5640, 'micro-LED', 4584);
INSERT INTO `os_patent_field_text` VALUES (5641, '磁吸式MicroLED。巨量转移要求是把微米级别的、几十万甚至上百万的LED(发光二极管)晶圆芯片精确地从施主晶圆上分裂出来有序地转移至目标基板上。', 4584);
INSERT INTO `os_patent_field_text` VALUES (5642, 'Mini-LED', 4584);
INSERT INTO `os_patent_field_text` VALUES (5643, 'Mini-LED。拼接显示面板', 4584);
INSERT INTO `os_patent_field_text` VALUES (5644, 'mini LED', 4584);
INSERT INTO `os_patent_field_text` VALUES (5645, '散热能力', 4584);
INSERT INTO `os_patent_field_text` VALUES (5646, 'Micro-LED面板、Mini-LED面板', 4584);
INSERT INTO `os_patent_field_text` VALUES (5647, '轻薄化设计', 4584);
INSERT INTO `os_patent_field_text` VALUES (5648, 'Micro-LED面板、Mini-LED面板。巨量转移', 4584);
INSERT INTO `os_patent_field_text` VALUES (5649, 'QD-miniLED显示技术以蓝光miniLED作为背光，利用高能量的蓝光激发红或绿量子点产生相应的红光或绿光，从而实现色转换。这种显示技术相对红、绿、蓝三色miniLED直显技术而言，只需要蓝色miniLED芯片，再结合量子点色转换层，就可以实现全彩化。', 4584);
INSERT INTO `os_patent_field_text` VALUES (5650, 'QD-miniLED。QD-miniLED显示技术以蓝光miniLED作为背光，利用高能量的蓝光激发红或绿量子点产生相应的红光或绿光，从而实现色转换。这种显示技术相对红、绿、蓝三色miniLED直显技术而言，只需要蓝色miniLED芯片，再结合量子点色转换层，就可以实现全彩化。', 4584);
INSERT INTO `os_patent_field_text` VALUES (5651, 'QD-miniLED', 4584);
INSERT INTO `os_patent_field_text` VALUES (5652, 'Mini-LED，Micro-LED', 4584);
INSERT INTO `os_patent_field_text` VALUES (5653, '窄边框', 4584);
INSERT INTO `os_patent_field_text` VALUES (5654, '？', 4584);
INSERT INTO `os_patent_field_text` VALUES (5655, '技术原理：由于光散射层12的存在，激光源发出的激光射入该光散射层12后会发生散射，从而即使在激光剥离制程之前的工艺过程中透明刚性基板10表面也即光散射层12表面存在无法透光的缺陷点13，激光剥离制程中激光源发出的激光也能够绕过缺陷点13而照射在透明刚性基板10与柔性基板20的界面上与缺陷点13相对的位置，从而激光均匀照射在透明刚性基板10与柔性基板20的界面，使该界面每一处接收到的激光能量一致，保证激光剥离制程之后透明刚性基板10与柔性基板20界面的每一位置均分离，提升激光剥离制程的良率，进而提升产品良率，同时降低激光剥离制程对激光源能量波动的依赖性，扩大激光剥离制程的工艺窗口，降低设备的成本，从而使产品成本下降，提升产品的竞争力。', 4584);
INSERT INTO `os_patent_field_text` VALUES (7758, '1', 4580);
INSERT INTO `os_patent_field_text` VALUES (7759, '1111', 4582);
INSERT INTO `os_patent_field_text` VALUES (10016, '测试', 4650);
INSERT INTO `os_patent_field_text` VALUES (10017, '测试2', 4650);

-- ----------------------------
-- Table structure for os_patent_field_tree
-- ----------------------------
DROP TABLE IF EXISTS `os_patent_field_tree`;
CREATE TABLE `os_patent_field_tree`  (
  `id` int(0) UNSIGNED NOT NULL AUTO_INCREMENT COMMENT 'ID',
  `name` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT '' COMMENT '文本内容',
  `cid` int(0) NULL DEFAULT NULL COMMENT '自定义字段ID',
  `sid` int(0) NULL DEFAULT 0 COMMENT '父级ID',
  `path` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT '' COMMENT '路径',
  `level` tinyint(1) NULL DEFAULT 1 COMMENT '层级',
  `zid` int(0) NULL DEFAULT 0 COMMENT '树自己id',
  `order` int(0) NULL DEFAULT 0 COMMENT '节点顺序',
  PRIMARY KEY (`id`) USING BTREE,
  INDEX `cid`(`cid`) USING BTREE,
  INDEX `id`(`id`) USING BTREE,
  INDEX `path`(`path`) USING BTREE
) ENGINE = InnoDB AUTO_INCREMENT = 8309 CHARACTER SET = utf8 COLLATE = utf8_general_ci COMMENT = '自定义字段树类型关联表' ROW_FORMAT = Dynamic;

-- ----------------------------
-- Records of os_patent_field_tree
-- ----------------------------
INSERT INTO `os_patent_field_tree` VALUES (8296, '1', 4626, 0, '8296', 1, 8296, 0);
INSERT INTO `os_patent_field_tree` VALUES (8297, '2', 4626, 0, '8297', 1, 8297, 1);
INSERT INTO `os_patent_field_tree` VALUES (8298, '1-1', 4626, 8296, '8296/8298', 2, 8298, 0);
INSERT INTO `os_patent_field_tree` VALUES (8299, '1-2', 4626, 8296, '8296/8299', 2, 8299, 1);
INSERT INTO `os_patent_field_tree` VALUES (8300, '2-1', 4626, 8297, '8297/8300', 2, 8300, 0);
INSERT INTO `os_patent_field_tree` VALUES (8305, '节点1', 4651, 0, '8305', 1, 8305, 8305);
INSERT INTO `os_patent_field_tree` VALUES (8306, '节点1-1', 4651, 8305, '8305/8306', 2, 8306, 8306);
INSERT INTO `os_patent_field_tree` VALUES (8307, '节点2', 4651, 0, '8307', 1, 8307, 8307);
INSERT INTO `os_patent_field_tree` VALUES (8308, '节点3', 4651, 0, '8308', 1, 8308, 8308);

-- ----------------------------
-- Table structure for os_patent_img
-- ----------------------------
DROP TABLE IF EXISTS `os_patent_img`;
CREATE TABLE `os_patent_img`  (
  `id` int(0) UNSIGNED NOT NULL AUTO_INCREMENT COMMENT 'ID',
  `status` tinyint(1) NULL DEFAULT 0 COMMENT '摘要附图 ',
  `address` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NOT NULL DEFAULT '' COMMENT '图片地址',
  `pid` int(0) NOT NULL COMMENT '专利ID',
  `file_name` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '文件名称',
  PRIMARY KEY (`id`) USING BTREE
) ENGINE = InnoDB AUTO_INCREMENT = 7082 CHARACTER SET = utf8 COLLATE = utf8_general_ci COMMENT = '专利信息附图表' ROW_FORMAT = Dynamic;

-- ----------------------------
-- Records of os_patent_img
-- ----------------------------
INSERT INTO `os_patent_img` VALUES (6570, 1, '\\20220510\\aa4f6519cb574699b446db4ca630644e.png', 23625, 'aa4f6519cb574699b446db4ca630644e.png');
INSERT INTO `os_patent_img` VALUES (6571, 1, '\\20220510\\bab0f28bfce34773a205cb61ce0936c0.png', 23626, 'bab0f28bfce34773a205cb61ce0936c0.png');
INSERT INTO `os_patent_img` VALUES (6572, 1, '\\20220510\\330587ec4af8454cb2c838e00b16add4.png', 23627, '330587ec4af8454cb2c838e00b16add4.png');
INSERT INTO `os_patent_img` VALUES (6573, 1, '\\20220510\\4fcc922ea56946ccaaedaf1f0dceb802.png', 23628, '4fcc922ea56946ccaaedaf1f0dceb802.png');
INSERT INTO `os_patent_img` VALUES (6574, 1, '\\20220510\\72c48c95ff0546389b036f4a424faece.png', 23629, '72c48c95ff0546389b036f4a424faece.png');
INSERT INTO `os_patent_img` VALUES (6575, 1, '\\20220510\\e2f7a638dc5b4e83ab1ddec15bc29f9b.png', 23630, 'e2f7a638dc5b4e83ab1ddec15bc29f9b.png');
INSERT INTO `os_patent_img` VALUES (6576, 1, '\\20220510\\20e685af83924956a2171fbfe4998186.png', 23631, '20e685af83924956a2171fbfe4998186.png');
INSERT INTO `os_patent_img` VALUES (6577, 1, '\\20220510\\4ab64047bafd4442bdebf73d56d4550a.png', 23632, '4ab64047bafd4442bdebf73d56d4550a.png');
INSERT INTO `os_patent_img` VALUES (6578, 1, '\\20220510\\f7ed968662f54e599a4b8eee39e7821c.png', 23633, 'f7ed968662f54e599a4b8eee39e7821c.png');
INSERT INTO `os_patent_img` VALUES (6579, 1, '\\20220510\\e26d40750c174bfd932522a6d11f568d.png', 23634, 'e26d40750c174bfd932522a6d11f568d.png');
INSERT INTO `os_patent_img` VALUES (6580, 1, '\\20220510\\092760df09d641fbaa99216fc9a41892.png', 23635, '092760df09d641fbaa99216fc9a41892.png');
INSERT INTO `os_patent_img` VALUES (6581, 1, '\\20220510\\1e1890acb67d418d98576df268358a2e.png', 23636, '1e1890acb67d418d98576df268358a2e.png');
INSERT INTO `os_patent_img` VALUES (6582, 1, '\\20220510\\e0519bdb62804804bd15a3c61cf52dd0.png', 23637, 'e0519bdb62804804bd15a3c61cf52dd0.png');
INSERT INTO `os_patent_img` VALUES (6583, 1, '\\20220510\\e33ac2d784024fffb54a05de58f57c24.png', 23638, 'e33ac2d784024fffb54a05de58f57c24.png');
INSERT INTO `os_patent_img` VALUES (6584, 1, '\\20220510\\9826d70c325b451195c9a6537b98946c.png', 23639, '9826d70c325b451195c9a6537b98946c.png');
INSERT INTO `os_patent_img` VALUES (6585, 1, '\\20220510\\a2754b787d6841058b8415c4775d1a61.png', 23640, 'a2754b787d6841058b8415c4775d1a61.png');
INSERT INTO `os_patent_img` VALUES (6586, 1, '\\20220510\\2750fddbc4f84f358dfcb2408f978f23.png', 23641, '2750fddbc4f84f358dfcb2408f978f23.png');
INSERT INTO `os_patent_img` VALUES (6587, 1, '\\20220510\\f508cfe7b9104ee086c0926e83afd85b.png', 23642, 'f508cfe7b9104ee086c0926e83afd85b.png');
INSERT INTO `os_patent_img` VALUES (6588, 1, '\\20220510\\9635648097c840f498d5e1e1e5dd4155.png', 23643, '9635648097c840f498d5e1e1e5dd4155.png');
INSERT INTO `os_patent_img` VALUES (6589, 1, '\\20220510\\bcb16e9d9c8343a7a4145ad3b5bb6617.png', 23644, 'bcb16e9d9c8343a7a4145ad3b5bb6617.png');
INSERT INTO `os_patent_img` VALUES (6590, 1, '\\20220510\\547c70de1f034749a74470f91ced15bb.png', 23645, '547c70de1f034749a74470f91ced15bb.png');
INSERT INTO `os_patent_img` VALUES (6591, 1, '\\20220510\\cca9c5312a044f5794eed06f85b76ece.png', 23646, 'cca9c5312a044f5794eed06f85b76ece.png');
INSERT INTO `os_patent_img` VALUES (6592, 1, '\\20220510\\9aefdfb0404b44df8a0f97038c8b6833.png', 23647, '9aefdfb0404b44df8a0f97038c8b6833.png');
INSERT INTO `os_patent_img` VALUES (6593, 1, '\\20220510\\5c6fd4de40214088b89f913abf4278fe.png', 23648, '5c6fd4de40214088b89f913abf4278fe.png');
INSERT INTO `os_patent_img` VALUES (6594, 1, '\\20220510\\47eb806fb5bd431f9a614c4e1cdfecd0.png', 23649, '47eb806fb5bd431f9a614c4e1cdfecd0.png');
INSERT INTO `os_patent_img` VALUES (6595, 1, '\\20220510\\02058eda4f094a05a7a8af2059ec1974.png', 23650, '02058eda4f094a05a7a8af2059ec1974.png');
INSERT INTO `os_patent_img` VALUES (6596, 1, '\\20220510\\6d3bc1450fae42a4b59980998af02613.png', 23651, '6d3bc1450fae42a4b59980998af02613.png');
INSERT INTO `os_patent_img` VALUES (6597, 1, '\\20220510\\9494dfeda92641d09375720e879e8f58.png', 23652, '9494dfeda92641d09375720e879e8f58.png');
INSERT INTO `os_patent_img` VALUES (6598, 1, '\\20220510\\b0a6eb748ea742659a9129cc2120fd25.png', 23653, 'b0a6eb748ea742659a9129cc2120fd25.png');
INSERT INTO `os_patent_img` VALUES (6599, 1, '\\20220510\\b1e653508cab4a45a1b1a1ca02b78000.png', 23654, 'b1e653508cab4a45a1b1a1ca02b78000.png');
INSERT INTO `os_patent_img` VALUES (6600, 1, '\\20220510\\31a0956a258e4b9199a959042d809a57.png', 23655, '31a0956a258e4b9199a959042d809a57.png');
INSERT INTO `os_patent_img` VALUES (6601, 1, '\\20220510\\d9305fc12d7c4bcf9958c5ccdf6ee10c.png', 23656, 'd9305fc12d7c4bcf9958c5ccdf6ee10c.png');
INSERT INTO `os_patent_img` VALUES (6602, 1, '\\20220510\\04780c95813c427882c44c60425c7a02.png', 23657, '04780c95813c427882c44c60425c7a02.png');
INSERT INTO `os_patent_img` VALUES (6603, 1, '\\20220510\\4fa5fe0938ac461ea5d34e7b982b492d.png', 23658, '4fa5fe0938ac461ea5d34e7b982b492d.png');
INSERT INTO `os_patent_img` VALUES (6604, 1, '\\20220510\\e961609ab3d04e40a4a585a1fa61afbf.png', 23659, 'e961609ab3d04e40a4a585a1fa61afbf.png');
INSERT INTO `os_patent_img` VALUES (6605, 1, '\\20220510\\2877280d6ab64f90a33214cef761e7dd.png', 23660, '2877280d6ab64f90a33214cef761e7dd.png');
INSERT INTO `os_patent_img` VALUES (6606, 1, '\\20220510\\94b6ac6124be4f6bae761bedd336e808.png', 23661, '94b6ac6124be4f6bae761bedd336e808.png');
INSERT INTO `os_patent_img` VALUES (6607, 1, '\\20220510\\4cd909efaaea4133a43bcbadb2620bc0.png', 23662, '4cd909efaaea4133a43bcbadb2620bc0.png');
INSERT INTO `os_patent_img` VALUES (6608, 1, '\\20220510\\eb53be9bfd6840a5b0671d3c8bdd258d.png', 23663, 'eb53be9bfd6840a5b0671d3c8bdd258d.png');
INSERT INTO `os_patent_img` VALUES (6609, 1, '\\20220510\\d89b78e3a196445a8e8fe7692978203e.png', 23664, 'd89b78e3a196445a8e8fe7692978203e.png');
INSERT INTO `os_patent_img` VALUES (6610, 1, '\\20220510\\8a6edc55ab5943ba8c1f9f921785793b.png', 23665, '8a6edc55ab5943ba8c1f9f921785793b.png');
INSERT INTO `os_patent_img` VALUES (6611, 1, '\\20220510\\3299425922d94cc99171f9787c54e46a.png', 23666, '3299425922d94cc99171f9787c54e46a.png');
INSERT INTO `os_patent_img` VALUES (6612, 1, '\\20220510\\bdc9f1f70586412080c8ca576a03ea3e.png', 23667, 'bdc9f1f70586412080c8ca576a03ea3e.png');
INSERT INTO `os_patent_img` VALUES (6613, 1, '\\20220510\\eab12f6f2fa544f88bfc4156c5317a25.png', 23668, 'eab12f6f2fa544f88bfc4156c5317a25.png');
INSERT INTO `os_patent_img` VALUES (6614, 1, '\\20220510\\0b10c8e81b2c4e7d8c64e5cd60afde53.png', 23669, '0b10c8e81b2c4e7d8c64e5cd60afde53.png');
INSERT INTO `os_patent_img` VALUES (6615, 1, '\\20220510\\41a82d4d8e1c48038fdd3bbf60f86229.png', 23670, '41a82d4d8e1c48038fdd3bbf60f86229.png');
INSERT INTO `os_patent_img` VALUES (6616, 1, '\\20220510\\7a8133e77fde4606b7f6d3ecaed59001.png', 23671, '7a8133e77fde4606b7f6d3ecaed59001.png');
INSERT INTO `os_patent_img` VALUES (6617, 1, '\\20220510\\0d05b00fb3474d1a9c778d3e4297c643.png', 23672, '0d05b00fb3474d1a9c778d3e4297c643.png');
INSERT INTO `os_patent_img` VALUES (6618, 1, '\\20220510\\ef819ef7db2d484485416a242b5c320e.png', 23673, 'ef819ef7db2d484485416a242b5c320e.png');
INSERT INTO `os_patent_img` VALUES (6619, 1, '\\20220510\\286b30c46e4642fd8d107b30b9009efc.png', 23674, '286b30c46e4642fd8d107b30b9009efc.png');
INSERT INTO `os_patent_img` VALUES (6620, 1, '\\20220510\\c6e72848e25b47aaa7744081f09e6614.png', 23675, 'c6e72848e25b47aaa7744081f09e6614.png');
INSERT INTO `os_patent_img` VALUES (6621, 1, '\\20220510\\c8914d99b6b144df93d8e5215de0a616.png', 23676, 'c8914d99b6b144df93d8e5215de0a616.png');
INSERT INTO `os_patent_img` VALUES (6622, 1, '\\20220510\\7e23ff5e226b49c49515e4cc3faca0d0.png', 23677, '7e23ff5e226b49c49515e4cc3faca0d0.png');
INSERT INTO `os_patent_img` VALUES (6623, 1, '\\20220510\\16f5638fc90a489cb81f6807dcaddffe.png', 23678, '16f5638fc90a489cb81f6807dcaddffe.png');
INSERT INTO `os_patent_img` VALUES (6624, 1, '\\20220510\\53f67722b1c74b518bd57ebebc82965c.png', 23679, '53f67722b1c74b518bd57ebebc82965c.png');
INSERT INTO `os_patent_img` VALUES (6625, 1, '\\20220510\\e9b8a49471d94fa7a1e1727b092c2736.png', 23680, 'e9b8a49471d94fa7a1e1727b092c2736.png');
INSERT INTO `os_patent_img` VALUES (6626, 1, '\\20220510\\87182cc536f74df78bf052d0549e5425.png', 23681, '87182cc536f74df78bf052d0549e5425.png');
INSERT INTO `os_patent_img` VALUES (6627, 1, '\\20220510\\c723f4958d844d1289a433cac678485a.png', 23682, 'c723f4958d844d1289a433cac678485a.png');
INSERT INTO `os_patent_img` VALUES (6628, 1, '\\20220510\\573a989e6283480d941d1052f573fa57.png', 23683, '573a989e6283480d941d1052f573fa57.png');
INSERT INTO `os_patent_img` VALUES (6629, 1, '\\20220510\\e6cadb48f429453e9a00630275b943d0.png', 23684, 'e6cadb48f429453e9a00630275b943d0.png');
INSERT INTO `os_patent_img` VALUES (6630, 1, '\\20220510\\37a7021f2b644bc997cca248fcfeaeec.png', 23685, '37a7021f2b644bc997cca248fcfeaeec.png');
INSERT INTO `os_patent_img` VALUES (6631, 1, '\\20220510\\ff00edf8e76a47e4bdeef74c3e415b2c.png', 23686, 'ff00edf8e76a47e4bdeef74c3e415b2c.png');
INSERT INTO `os_patent_img` VALUES (6632, 1, '\\20220510\\3e94b9c88aa94ae4b9e4f70706bb11d5.png', 23687, '3e94b9c88aa94ae4b9e4f70706bb11d5.png');
INSERT INTO `os_patent_img` VALUES (6633, 1, '\\20220510\\4ea3946ef450412c9506d57a95d609c6.png', 23688, '4ea3946ef450412c9506d57a95d609c6.png');
INSERT INTO `os_patent_img` VALUES (6634, 1, '\\20220510\\4fe23ccac7894c9ca752b0a0e5bd1118.png', 23689, '4fe23ccac7894c9ca752b0a0e5bd1118.png');
INSERT INTO `os_patent_img` VALUES (6635, 1, '\\20220510\\122afaf482fd422ba8aab584ea03def0.png', 23690, '122afaf482fd422ba8aab584ea03def0.png');
INSERT INTO `os_patent_img` VALUES (6636, 1, '\\20220510\\2a3900a11e7a4079972c0af9b34f7eaa.png', 23691, '2a3900a11e7a4079972c0af9b34f7eaa.png');
INSERT INTO `os_patent_img` VALUES (6637, 1, '\\20220510\\cee8b639fab34722a62314d8a7eae7ad.png', 23692, 'cee8b639fab34722a62314d8a7eae7ad.png');
INSERT INTO `os_patent_img` VALUES (6638, 1, '\\20220510\\8c5ec7913c974e78bab0fb24a04fd798.png', 23693, '8c5ec7913c974e78bab0fb24a04fd798.png');
INSERT INTO `os_patent_img` VALUES (6639, 1, '\\20220510\\fc9ece3d07a846ff80095c1f708bcd1f.png', 23694, 'fc9ece3d07a846ff80095c1f708bcd1f.png');
INSERT INTO `os_patent_img` VALUES (6640, 1, '\\20220510\\bcb386a49f944b09a693b8c9c9c4ec24.png', 23695, 'bcb386a49f944b09a693b8c9c9c4ec24.png');
INSERT INTO `os_patent_img` VALUES (6641, 1, '\\20220510\\2ca7577206c74913a39c5cac9f7fb35d.png', 23696, '2ca7577206c74913a39c5cac9f7fb35d.png');
INSERT INTO `os_patent_img` VALUES (6642, 1, '\\20220510\\2d6d0e3729e544d7ae5cfb6e1abb6ea8.png', 23697, '2d6d0e3729e544d7ae5cfb6e1abb6ea8.png');
INSERT INTO `os_patent_img` VALUES (6643, 1, '\\20220510\\fedf80b5b7574d8da46b002b63642430.png', 23698, 'fedf80b5b7574d8da46b002b63642430.png');
INSERT INTO `os_patent_img` VALUES (6644, 1, '\\20220510\\035a898247f440448e016f71b922e30d.png', 23699, '035a898247f440448e016f71b922e30d.png');
INSERT INTO `os_patent_img` VALUES (6645, 1, '\\20220510\\c7284fe8d2a44867b8ec5c6ed20b914f.png', 23700, 'c7284fe8d2a44867b8ec5c6ed20b914f.png');
INSERT INTO `os_patent_img` VALUES (6646, 1, '\\20220510\\77bcdab7431240a886fb3f19206ef0d1.png', 23701, '77bcdab7431240a886fb3f19206ef0d1.png');
INSERT INTO `os_patent_img` VALUES (6647, 1, '\\20220510\\d7fd67ffac6441e8b1888549a1dade8f.png', 23702, 'd7fd67ffac6441e8b1888549a1dade8f.png');
INSERT INTO `os_patent_img` VALUES (6648, 1, '\\20220510\\70ba7c4af9dc4a7eab3484686915f731.png', 23703, '70ba7c4af9dc4a7eab3484686915f731.png');
INSERT INTO `os_patent_img` VALUES (6649, 1, '\\20220510\\c029eaecb2e145f9af82a9e7d4d32f31.png', 23704, 'c029eaecb2e145f9af82a9e7d4d32f31.png');
INSERT INTO `os_patent_img` VALUES (6650, 1, '\\20220510\\64da5a8e1f7644ac9bfb2b9f046471b5.png', 23705, '64da5a8e1f7644ac9bfb2b9f046471b5.png');
INSERT INTO `os_patent_img` VALUES (6651, 1, '\\20220510\\37b07114cafa4f83b5fcec8b57c47d83.png', 23706, '37b07114cafa4f83b5fcec8b57c47d83.png');
INSERT INTO `os_patent_img` VALUES (6652, 1, '\\20220510\\51b6f235828e4e97a0df6204f9daa8fc.png', 23707, '51b6f235828e4e97a0df6204f9daa8fc.png');
INSERT INTO `os_patent_img` VALUES (6653, 1, '\\20220510\\9b7b7ed0a22f461f94350a75271d1663.png', 23708, '9b7b7ed0a22f461f94350a75271d1663.png');
INSERT INTO `os_patent_img` VALUES (6654, 1, '\\20220510\\64e0aedfaff440f0aad7e7510ed5fda3.png', 23709, '64e0aedfaff440f0aad7e7510ed5fda3.png');
INSERT INTO `os_patent_img` VALUES (6655, 1, '\\20220510\\3ba03b1129c34015902e6b279f5b5c0b.png', 23710, '3ba03b1129c34015902e6b279f5b5c0b.png');
INSERT INTO `os_patent_img` VALUES (6656, 1, '\\20220510\\fca92e4a227f44599793417faaa44ab0.png', 23711, 'fca92e4a227f44599793417faaa44ab0.png');
INSERT INTO `os_patent_img` VALUES (6657, 1, '\\20220510\\f4ee319c0b0745e783e6e47d565bb9e7.png', 23712, 'f4ee319c0b0745e783e6e47d565bb9e7.png');
INSERT INTO `os_patent_img` VALUES (6658, 1, '\\20220510\\d1321a12636d4a8a82258d0e18491c39.png', 23713, 'd1321a12636d4a8a82258d0e18491c39.png');
INSERT INTO `os_patent_img` VALUES (6659, 1, '\\20220510\\abb6c4c135c544b3a4b58956d183c432.png', 23714, 'abb6c4c135c544b3a4b58956d183c432.png');
INSERT INTO `os_patent_img` VALUES (6660, 1, '\\20220510\\264dfadf247a41f9b31551a59576a838.png', 23715, '264dfadf247a41f9b31551a59576a838.png');
INSERT INTO `os_patent_img` VALUES (6661, 1, '\\20220510\\fe8e77bdb94b4a69973ff4fbfa2c05a1.png', 23716, 'fe8e77bdb94b4a69973ff4fbfa2c05a1.png');
INSERT INTO `os_patent_img` VALUES (6662, 1, '\\20220510\\dc58a79b4fa04769aaeeb8f72c19e5e7.png', 23717, 'dc58a79b4fa04769aaeeb8f72c19e5e7.png');
INSERT INTO `os_patent_img` VALUES (6663, 1, '\\20220510\\8144c47f71264fd5b93b5b9f14eb42ad.png', 23718, '8144c47f71264fd5b93b5b9f14eb42ad.png');
INSERT INTO `os_patent_img` VALUES (6664, 1, '\\20220510\\82af6a8b49b048ea9a5e97130f2495f1.png', 23719, '82af6a8b49b048ea9a5e97130f2495f1.png');
INSERT INTO `os_patent_img` VALUES (6665, 1, '\\20220510\\590a70e8274c4137ad0bbf328287e5b8.png', 23720, '590a70e8274c4137ad0bbf328287e5b8.png');
INSERT INTO `os_patent_img` VALUES (6666, 1, '\\20220510\\4f2eb4bb48674b6d94bb203d529b0f11.png', 23721, '4f2eb4bb48674b6d94bb203d529b0f11.png');
INSERT INTO `os_patent_img` VALUES (6667, 1, '\\20220510\\c701f1559e884657b5885f8c122c3f83.png', 23722, 'c701f1559e884657b5885f8c122c3f83.png');
INSERT INTO `os_patent_img` VALUES (6668, 1, '\\20220510\\39f537c1ad8241a39c02ed60b3b15aeb.png', 23723, '39f537c1ad8241a39c02ed60b3b15aeb.png');
INSERT INTO `os_patent_img` VALUES (6669, 1, '\\20220510\\8c1b3b11f6de4403bb66c4b8d8c1d824.png', 23724, '8c1b3b11f6de4403bb66c4b8d8c1d824.png');
INSERT INTO `os_patent_img` VALUES (6670, 1, '\\20220510\\7bb742c6503d46feb3639acb4917da83.png', 23725, '7bb742c6503d46feb3639acb4917da83.png');
INSERT INTO `os_patent_img` VALUES (6671, 1, '\\20220510\\a70afe907a3443d295001c991bb71f9c.png', 23726, 'a70afe907a3443d295001c991bb71f9c.png');
INSERT INTO `os_patent_img` VALUES (6672, 1, '\\20220510\\53221cde7db64e0fbc20ca4439876f86.png', 23727, '53221cde7db64e0fbc20ca4439876f86.png');
INSERT INTO `os_patent_img` VALUES (6673, 1, '\\20220510\\7dedf2d6ba304d81924ff158700f4d2f.png', 23728, '7dedf2d6ba304d81924ff158700f4d2f.png');
INSERT INTO `os_patent_img` VALUES (6674, 1, '\\20220510\\27b5ace540f6498cb8eda703c43785f1.png', 23729, '27b5ace540f6498cb8eda703c43785f1.png');
INSERT INTO `os_patent_img` VALUES (6675, 1, '\\20220510\\6d6d5053a60d4224b86e2ccba2b412ed.png', 23730, '6d6d5053a60d4224b86e2ccba2b412ed.png');
INSERT INTO `os_patent_img` VALUES (6676, 1, '\\20220510\\a03ece5227ea4882b4030429693f8b37.png', 23731, 'a03ece5227ea4882b4030429693f8b37.png');
INSERT INTO `os_patent_img` VALUES (6677, 1, '\\20220510\\90e6e449523a455eaf93ac8427ff09c5.png', 23732, '90e6e449523a455eaf93ac8427ff09c5.png');
INSERT INTO `os_patent_img` VALUES (6678, 1, '\\20220510\\18b7d758a244408d8b667eefb225dae8.png', 23733, '18b7d758a244408d8b667eefb225dae8.png');
INSERT INTO `os_patent_img` VALUES (6679, 1, '\\20220510\\67a65efd43f140aa90041bc3e5bb3d2e.png', 23734, '67a65efd43f140aa90041bc3e5bb3d2e.png');
INSERT INTO `os_patent_img` VALUES (6680, 1, '\\20220510\\bc97aeac644e438db19b5145b6e357c0.png', 23735, 'bc97aeac644e438db19b5145b6e357c0.png');
INSERT INTO `os_patent_img` VALUES (6681, 1, '\\20220510\\52a49ebf40554730900306507de0b9b5.png', 23736, '52a49ebf40554730900306507de0b9b5.png');
INSERT INTO `os_patent_img` VALUES (6682, 1, '\\20220510\\a983e0f8c0e24cc794e2a7e2a6a5c98b.png', 23737, 'a983e0f8c0e24cc794e2a7e2a6a5c98b.png');
INSERT INTO `os_patent_img` VALUES (6683, 1, '\\20220510\\2eb05a49adb8470786b311f0e58d61bd.png', 23738, '2eb05a49adb8470786b311f0e58d61bd.png');
INSERT INTO `os_patent_img` VALUES (6684, 1, '\\20220510\\fad9d2ddecaa484cb911c1136080d461.png', 23739, 'fad9d2ddecaa484cb911c1136080d461.png');
INSERT INTO `os_patent_img` VALUES (6685, 1, '\\20220510\\4c1f657730c342f6acea20a5b6a413e2.png', 23740, '4c1f657730c342f6acea20a5b6a413e2.png');
INSERT INTO `os_patent_img` VALUES (6686, 1, '\\20220510\\cb78959179604f7683c6da7396f4225b.png', 23741, 'cb78959179604f7683c6da7396f4225b.png');
INSERT INTO `os_patent_img` VALUES (6687, 1, '\\20220510\\b572ae79cd8644bc8ab0cfef0e69fd1d.png', 23742, 'b572ae79cd8644bc8ab0cfef0e69fd1d.png');
INSERT INTO `os_patent_img` VALUES (6688, 1, '\\20220510\\b872099ca477418abe3dad5c01c116c4.png', 23743, 'b872099ca477418abe3dad5c01c116c4.png');
INSERT INTO `os_patent_img` VALUES (6689, 1, '\\20220510\\0e2a716aa97542cda3f645e6ffff8d6d.png', 23744, '0e2a716aa97542cda3f645e6ffff8d6d.png');
INSERT INTO `os_patent_img` VALUES (6690, 1, '\\20220510\\8b67163f930c4b2fadf236df2d531931.png', 23745, '8b67163f930c4b2fadf236df2d531931.png');
INSERT INTO `os_patent_img` VALUES (6691, 1, '\\20220510\\45d926a7d26841a49fe6d62b59906053.png', 23746, '45d926a7d26841a49fe6d62b59906053.png');
INSERT INTO `os_patent_img` VALUES (6692, 1, '\\20220510\\ffca4553e68440beb2d4609b858dc8d6.png', 23747, 'ffca4553e68440beb2d4609b858dc8d6.png');
INSERT INTO `os_patent_img` VALUES (6693, 1, '\\20220510\\35906d0c4a544b1a95a73001331b0ee1.png', 23748, '35906d0c4a544b1a95a73001331b0ee1.png');
INSERT INTO `os_patent_img` VALUES (6694, 1, '\\20220510\\c49aeea0f3bc412c99a686102d84a335.png', 23749, 'c49aeea0f3bc412c99a686102d84a335.png');
INSERT INTO `os_patent_img` VALUES (6695, 1, '\\20220510\\d848637b28324e90abbffe5f3fd1d041.png', 23750, 'd848637b28324e90abbffe5f3fd1d041.png');
INSERT INTO `os_patent_img` VALUES (6696, 1, '\\20220510\\a027516e3ad446bebbd5153a4d0bdc56.png', 23751, 'a027516e3ad446bebbd5153a4d0bdc56.png');
INSERT INTO `os_patent_img` VALUES (6697, 1, '\\20220510\\ee37afb4491744c68c4f0ad693dde033.png', 23752, 'ee37afb4491744c68c4f0ad693dde033.png');
INSERT INTO `os_patent_img` VALUES (6698, 1, '\\20220510\\b5c4529939e24031ad1f9844787932ad.png', 23753, 'b5c4529939e24031ad1f9844787932ad.png');
INSERT INTO `os_patent_img` VALUES (6699, 1, '\\20220510\\00a43c770a4a4f078b93a65e6a92e8cf.png', 23754, '00a43c770a4a4f078b93a65e6a92e8cf.png');
INSERT INTO `os_patent_img` VALUES (6700, 1, '\\20220510\\f999a93b79ab4261941149846894aae0.png', 23755, 'f999a93b79ab4261941149846894aae0.png');
INSERT INTO `os_patent_img` VALUES (6701, 1, '\\20220510\\91a37420648e46db8aa52cb52111e5d4.png', 23756, '91a37420648e46db8aa52cb52111e5d4.png');
INSERT INTO `os_patent_img` VALUES (6702, 1, '\\20220510\\a3ea3ee4f3564671b943dc98f6b800d1.png', 23757, 'a3ea3ee4f3564671b943dc98f6b800d1.png');
INSERT INTO `os_patent_img` VALUES (6703, 1, '\\20220510\\dce2f6057f184f0aa6588cf1c58a86fc.png', 23758, 'dce2f6057f184f0aa6588cf1c58a86fc.png');
INSERT INTO `os_patent_img` VALUES (6704, 1, '\\20220510\\63a364b27f3a4f549dc162b40ee06df1.png', 23759, '63a364b27f3a4f549dc162b40ee06df1.png');
INSERT INTO `os_patent_img` VALUES (6705, 1, '\\20220510\\03a7a992a3404e1ea193ba023b3c4f91.png', 23760, '03a7a992a3404e1ea193ba023b3c4f91.png');
INSERT INTO `os_patent_img` VALUES (6706, 1, '\\20220510\\29c7ca40d984493282e2123d7d3ba7af.png', 23761, '29c7ca40d984493282e2123d7d3ba7af.png');
INSERT INTO `os_patent_img` VALUES (6707, 1, '\\20220510\\a89cfb78b52440019c6331b08ba8a2a3.png', 23762, 'a89cfb78b52440019c6331b08ba8a2a3.png');
INSERT INTO `os_patent_img` VALUES (6708, 1, '\\20220510\\7fd041cd35e4400caefaea428d4621a4.png', 23763, '7fd041cd35e4400caefaea428d4621a4.png');
INSERT INTO `os_patent_img` VALUES (6709, 1, '\\20220510\\93cf0afc768d492a9f171cdb89e9bed8.png', 23764, '93cf0afc768d492a9f171cdb89e9bed8.png');
INSERT INTO `os_patent_img` VALUES (6710, 1, '\\20220510\\df52bc40f0d8417b807ec8afd92de5e2.png', 23765, 'df52bc40f0d8417b807ec8afd92de5e2.png');
INSERT INTO `os_patent_img` VALUES (6711, 1, '\\20220510\\07b26e2c80384da4812ccb586834a78f.png', 23766, '07b26e2c80384da4812ccb586834a78f.png');
INSERT INTO `os_patent_img` VALUES (6712, 1, '\\20220510\\3a04fe48a66a4ceebcb8c31c1158d257.png', 23767, '3a04fe48a66a4ceebcb8c31c1158d257.png');
INSERT INTO `os_patent_img` VALUES (6713, 1, '\\20220510\\bcf7b165784c4c1a8a0b165a6f365565.png', 23768, 'bcf7b165784c4c1a8a0b165a6f365565.png');
INSERT INTO `os_patent_img` VALUES (6714, 1, '\\20220510\\146b41147afd424ea9b6449e00956b22.png', 23769, '146b41147afd424ea9b6449e00956b22.png');
INSERT INTO `os_patent_img` VALUES (6715, 1, '\\20220510\\53f1ea45f00a4866afdd165d3ba42130.png', 23770, '53f1ea45f00a4866afdd165d3ba42130.png');
INSERT INTO `os_patent_img` VALUES (6716, 1, '\\20220510\\4cb3b5d2fc6345d297ce6c38b217c8e6.png', 23771, '4cb3b5d2fc6345d297ce6c38b217c8e6.png');
INSERT INTO `os_patent_img` VALUES (6717, 1, '\\20220510\\c0a26526765d4eb9a0517d17282bc0e9.png', 23772, 'c0a26526765d4eb9a0517d17282bc0e9.png');
INSERT INTO `os_patent_img` VALUES (6718, 1, '\\20220510\\73647f3f5c504ab1aaca6e690950a081.png', 23773, '73647f3f5c504ab1aaca6e690950a081.png');
INSERT INTO `os_patent_img` VALUES (6719, 1, '\\20220510\\8ef6a1426b8948038fafa9e02209cbac.png', 23774, '8ef6a1426b8948038fafa9e02209cbac.png');
INSERT INTO `os_patent_img` VALUES (6720, 1, '\\20220510\\c7204b57c82f4395ba7a2c8cddb80285.png', 23775, 'c7204b57c82f4395ba7a2c8cddb80285.png');
INSERT INTO `os_patent_img` VALUES (6721, 1, '\\20220510\\f8c268b1c614439db287b1e57b74f494.png', 23776, 'f8c268b1c614439db287b1e57b74f494.png');
INSERT INTO `os_patent_img` VALUES (6722, 1, '\\20220510\\2efd17111b7a4e8dbdd03b1879733f2e.png', 23777, '2efd17111b7a4e8dbdd03b1879733f2e.png');
INSERT INTO `os_patent_img` VALUES (6723, 1, '\\20220510\\604b68c2295b42d290114de5eeedbb4b.png', 23778, '604b68c2295b42d290114de5eeedbb4b.png');
INSERT INTO `os_patent_img` VALUES (6724, 1, '\\20220510\\438650b8f3ce487799ec00054bfed762.png', 23779, '438650b8f3ce487799ec00054bfed762.png');
INSERT INTO `os_patent_img` VALUES (6725, 1, '\\20220510\\c614f655039e4f6289ad57fddddb3115.png', 23780, 'c614f655039e4f6289ad57fddddb3115.png');
INSERT INTO `os_patent_img` VALUES (6726, 1, '\\20220510\\0e6486e0eb1d45dca2412f747b53ee36.png', 23781, '0e6486e0eb1d45dca2412f747b53ee36.png');
INSERT INTO `os_patent_img` VALUES (6727, 1, '\\20220510\\b8376f2473774565bdd0579f85acac33.png', 23782, 'b8376f2473774565bdd0579f85acac33.png');
INSERT INTO `os_patent_img` VALUES (6728, 1, '\\20220510\\47b79a968b3d4e99a47d4b0a92963367.png', 23783, '47b79a968b3d4e99a47d4b0a92963367.png');
INSERT INTO `os_patent_img` VALUES (6729, 1, '\\20220510\\ee47d67a915447118bf77b9a52349855.png', 23784, 'ee47d67a915447118bf77b9a52349855.png');
INSERT INTO `os_patent_img` VALUES (6730, 1, '\\20220510\\1eeeb2ff17fa49a1b65d85a06f01097b.png', 23785, '1eeeb2ff17fa49a1b65d85a06f01097b.png');
INSERT INTO `os_patent_img` VALUES (6731, 1, '\\20220510\\4df25bd6274b43b5a219c4340b34511c.png', 23786, '4df25bd6274b43b5a219c4340b34511c.png');
INSERT INTO `os_patent_img` VALUES (6732, 1, '\\20220510\\39e53683015544c8bc3c32ce4b8248bc.png', 23787, '39e53683015544c8bc3c32ce4b8248bc.png');
INSERT INTO `os_patent_img` VALUES (6733, 1, '\\20220510\\3d25fceb326148c4bb3f3d40183dde1a.png', 23788, '3d25fceb326148c4bb3f3d40183dde1a.png');
INSERT INTO `os_patent_img` VALUES (6734, 1, '\\20220510\\2bc9fae4eecb4f40967d585692bebf9b.png', 23789, '2bc9fae4eecb4f40967d585692bebf9b.png');
INSERT INTO `os_patent_img` VALUES (6735, 1, '\\20220510\\14341b5569374bb59849b98460c87fb8.png', 23790, '14341b5569374bb59849b98460c87fb8.png');
INSERT INTO `os_patent_img` VALUES (6736, 1, '\\20220510\\174e193dd4c845248baf29a95ee26412.png', 23791, '174e193dd4c845248baf29a95ee26412.png');
INSERT INTO `os_patent_img` VALUES (6737, 1, '\\20220510\\b405a4001ce940c0809f6dc4d3f98c6c.png', 23792, 'b405a4001ce940c0809f6dc4d3f98c6c.png');
INSERT INTO `os_patent_img` VALUES (6738, 1, '\\20220510\\344aee053902486aae061e68cc3e51f4.png', 23793, '344aee053902486aae061e68cc3e51f4.png');
INSERT INTO `os_patent_img` VALUES (6739, 1, '\\20220510\\c66f6910de784b5fb171a622415c2d9c.png', 23794, 'c66f6910de784b5fb171a622415c2d9c.png');
INSERT INTO `os_patent_img` VALUES (6740, 1, '\\20220510\\d4e4c3283e0c437bb6bb607b63c848af.png', 23795, 'd4e4c3283e0c437bb6bb607b63c848af.png');
INSERT INTO `os_patent_img` VALUES (6741, 1, '\\20220510\\762ddfdee30b4ce196b52636cfd6fc8b.png', 23796, '762ddfdee30b4ce196b52636cfd6fc8b.png');
INSERT INTO `os_patent_img` VALUES (6742, 1, '\\20220510\\1c06c8e922b04215a22576891f627e40.png', 23797, '1c06c8e922b04215a22576891f627e40.png');
INSERT INTO `os_patent_img` VALUES (6743, 1, '\\20220510\\37127c215eac472cb4b7e50e3370c3a9.png', 23798, '37127c215eac472cb4b7e50e3370c3a9.png');
INSERT INTO `os_patent_img` VALUES (6744, 1, '\\20220510\\e8a1ace6eb664159bbbdef16bd864517.png', 23799, 'e8a1ace6eb664159bbbdef16bd864517.png');
INSERT INTO `os_patent_img` VALUES (6745, 1, '\\20220510\\032f7fb2e5f34f6ab29d5ea3987d8924.png', 23800, '032f7fb2e5f34f6ab29d5ea3987d8924.png');
INSERT INTO `os_patent_img` VALUES (6746, 1, '\\20220510\\5ef7bca8a92f4f5e93d8a1449f0787b8.png', 23801, '5ef7bca8a92f4f5e93d8a1449f0787b8.png');
INSERT INTO `os_patent_img` VALUES (6747, 1, '\\20220510\\2d22b1c2b6fb4d4d959a5c07fa88afb2.png', 23802, '2d22b1c2b6fb4d4d959a5c07fa88afb2.png');
INSERT INTO `os_patent_img` VALUES (6748, 1, '\\20220510\\9440f0d2ebbf4572bd17235d888655f6.png', 23803, '9440f0d2ebbf4572bd17235d888655f6.png');
INSERT INTO `os_patent_img` VALUES (6749, 1, '\\20220510\\a441f535498b4e60b1fe5497c2aedda3.png', 23804, 'a441f535498b4e60b1fe5497c2aedda3.png');
INSERT INTO `os_patent_img` VALUES (6750, 1, '\\20220510\\390025a2a97444df97793b01b5ef4950.png', 23805, '390025a2a97444df97793b01b5ef4950.png');
INSERT INTO `os_patent_img` VALUES (6751, 1, '\\20220510\\bf40c8a19d984b6a93ad579182d1df19.png', 23806, 'bf40c8a19d984b6a93ad579182d1df19.png');
INSERT INTO `os_patent_img` VALUES (6752, 1, '\\20220510\\78601ab312c145539944e9055b5cd3f7.png', 23807, '78601ab312c145539944e9055b5cd3f7.png');
INSERT INTO `os_patent_img` VALUES (6753, 1, '\\20220510\\623f65d98a9442beb5957961c7e219d4.png', 23808, '623f65d98a9442beb5957961c7e219d4.png');
INSERT INTO `os_patent_img` VALUES (6754, 1, '\\20220510\\0f053f6a8f274203bfb97a350c9a431b.png', 23809, '0f053f6a8f274203bfb97a350c9a431b.png');
INSERT INTO `os_patent_img` VALUES (6755, 1, '\\20220510\\0b0547a490a24f7b9972b658c4e5c04f.png', 23810, '0b0547a490a24f7b9972b658c4e5c04f.png');
INSERT INTO `os_patent_img` VALUES (6756, 1, '\\20220510\\c9ebb6434c04440a84f3d8e270b305c1.png', 23811, 'c9ebb6434c04440a84f3d8e270b305c1.png');
INSERT INTO `os_patent_img` VALUES (6757, 1, '\\20220510\\e2323cb2f7734331b3eee4e59a0db953.png', 23812, 'e2323cb2f7734331b3eee4e59a0db953.png');
INSERT INTO `os_patent_img` VALUES (6758, 1, '\\20220510\\0e0af516e3404a7e9b7b5bfe8025e5b8.png', 23813, '0e0af516e3404a7e9b7b5bfe8025e5b8.png');
INSERT INTO `os_patent_img` VALUES (6759, 1, '\\20220510\\e9071c4f297442479ee5e4ef4830096b.png', 23814, 'e9071c4f297442479ee5e4ef4830096b.png');
INSERT INTO `os_patent_img` VALUES (6760, 1, '\\20220510\\871e1723e32046cc8a63146194d2638d.png', 23815, '871e1723e32046cc8a63146194d2638d.png');
INSERT INTO `os_patent_img` VALUES (6761, 1, '\\20220510\\da1e7a73c7b448c2b2d3a1b48acc54c3.png', 23816, 'da1e7a73c7b448c2b2d3a1b48acc54c3.png');
INSERT INTO `os_patent_img` VALUES (6762, 1, '\\20220510\\86c4ca73b45f49aab48ac1d52c5f797e.png', 23817, '86c4ca73b45f49aab48ac1d52c5f797e.png');
INSERT INTO `os_patent_img` VALUES (6763, 1, '\\20220510\\0a0afea1370e4a5f832b606b4520c549.png', 23818, '0a0afea1370e4a5f832b606b4520c549.png');
INSERT INTO `os_patent_img` VALUES (6764, 1, '\\20220510\\45d6fdc624154013a3ca82d87e02fd2a.png', 23819, '45d6fdc624154013a3ca82d87e02fd2a.png');
INSERT INTO `os_patent_img` VALUES (6765, 1, '\\20220510\\59b26e7a8ac244519de2eb76209483bf.png', 23820, '59b26e7a8ac244519de2eb76209483bf.png');
INSERT INTO `os_patent_img` VALUES (6766, 1, '\\20220510\\34e0950497c742368fe25c46c5f4a109.png', 23821, '34e0950497c742368fe25c46c5f4a109.png');
INSERT INTO `os_patent_img` VALUES (6767, 1, '\\20220510\\33489a3ad3f2401abdea953ce039cec2.png', 23822, '33489a3ad3f2401abdea953ce039cec2.png');
INSERT INTO `os_patent_img` VALUES (6768, 1, '\\20220510\\e5c868da3e6544ae9d792b39df9b74fb.png', 23823, 'e5c868da3e6544ae9d792b39df9b74fb.png');
INSERT INTO `os_patent_img` VALUES (6769, 1, '\\20220510\\b8ac4a145790486b92b5fad50fadcded.png', 23824, 'b8ac4a145790486b92b5fad50fadcded.png');
INSERT INTO `os_patent_img` VALUES (6770, 1, '\\20220510\\9e01fb9d47794b8b8c40ca2f0fc1e638.png', 23825, '9e01fb9d47794b8b8c40ca2f0fc1e638.png');
INSERT INTO `os_patent_img` VALUES (6771, 1, '\\20220510\\9b5f1948cbd542dbbb41b422eff73f6f.png', 23826, '9b5f1948cbd542dbbb41b422eff73f6f.png');
INSERT INTO `os_patent_img` VALUES (6772, 1, '\\20220510\\2a9facc49cae4c7d90da5204678a9577.png', 23827, '2a9facc49cae4c7d90da5204678a9577.png');
INSERT INTO `os_patent_img` VALUES (6773, 1, '\\20220510\\d1f82a9f33764db4b9de2fb73944f579.png', 23828, 'd1f82a9f33764db4b9de2fb73944f579.png');
INSERT INTO `os_patent_img` VALUES (6774, 1, '\\20220510\\796186a2632b4099a2253c757735e667.png', 23829, '796186a2632b4099a2253c757735e667.png');
INSERT INTO `os_patent_img` VALUES (6775, 1, '\\20220510\\ee45bf01368e4e07b0495dfe65274f18.png', 23830, 'ee45bf01368e4e07b0495dfe65274f18.png');
INSERT INTO `os_patent_img` VALUES (6776, 1, '\\20220510\\7bf988e06a9c45aebaca792aa24f433a.png', 23831, '7bf988e06a9c45aebaca792aa24f433a.png');
INSERT INTO `os_patent_img` VALUES (6777, 1, '\\20220510\\c659f47b72dc4afc8aa35d3a37ed35b1.png', 23832, 'c659f47b72dc4afc8aa35d3a37ed35b1.png');
INSERT INTO `os_patent_img` VALUES (6778, 1, '\\20220510\\bbf06decc68d416ab4a524843b1948ae.png', 23833, 'bbf06decc68d416ab4a524843b1948ae.png');
INSERT INTO `os_patent_img` VALUES (6779, 1, '\\20220510\\5263c0c4406a4d76b5379d09705b1e94.png', 23834, '5263c0c4406a4d76b5379d09705b1e94.png');
INSERT INTO `os_patent_img` VALUES (6780, 1, '\\20220510\\c9f42d63bb3c4892ac6d383f010a993e.png', 23835, 'c9f42d63bb3c4892ac6d383f010a993e.png');
INSERT INTO `os_patent_img` VALUES (6781, 1, '\\20220510\\96e92c416c2d4b0280e5fb6dc6aa0230.png', 23836, '96e92c416c2d4b0280e5fb6dc6aa0230.png');
INSERT INTO `os_patent_img` VALUES (6782, 1, '\\20220510\\fc387c4a30744a4a96d35a769bda3d9f.png', 23837, 'fc387c4a30744a4a96d35a769bda3d9f.png');
INSERT INTO `os_patent_img` VALUES (6783, 1, '\\20220510\\a3138d0304dd4070a055b7dfa015cc28.png', 23838, 'a3138d0304dd4070a055b7dfa015cc28.png');
INSERT INTO `os_patent_img` VALUES (6784, 1, '\\20220510\\ba15e1c41c56468dbf37f45ad991d4d3.png', 23839, 'ba15e1c41c56468dbf37f45ad991d4d3.png');
INSERT INTO `os_patent_img` VALUES (6785, 1, '\\20220510\\72f21cc7c4f4460399dbf8e03397fc24.png', 23840, '72f21cc7c4f4460399dbf8e03397fc24.png');
INSERT INTO `os_patent_img` VALUES (6786, 1, '\\20220510\\73cf466adb6044438b105536c795bc83.png', 23841, '73cf466adb6044438b105536c795bc83.png');
INSERT INTO `os_patent_img` VALUES (6787, 1, '\\20220510\\46129967d1364b1d9b0b9dac47e97f00.png', 23842, '46129967d1364b1d9b0b9dac47e97f00.png');
INSERT INTO `os_patent_img` VALUES (6788, 1, '\\20220510\\b6e204ea24064640afc99859931f065f.png', 23843, 'b6e204ea24064640afc99859931f065f.png');
INSERT INTO `os_patent_img` VALUES (6789, 1, '\\20220510\\fd0de8720bd24522aedf9335b6b5598b.png', 23844, 'fd0de8720bd24522aedf9335b6b5598b.png');
INSERT INTO `os_patent_img` VALUES (6790, 1, '\\20220510\\a913c75187f841a39be7103d7ff67cde.png', 23845, 'a913c75187f841a39be7103d7ff67cde.png');
INSERT INTO `os_patent_img` VALUES (6791, 1, '\\20220510\\60670500e9454fd0b466767414643041.png', 23846, '60670500e9454fd0b466767414643041.png');
INSERT INTO `os_patent_img` VALUES (6792, 1, '\\20220510\\33db0d709590451dababde55bf0b9a17.png', 23847, '33db0d709590451dababde55bf0b9a17.png');
INSERT INTO `os_patent_img` VALUES (6793, 1, '\\20220510\\03dce5d4cff9435f9bab5d1b14cd3703.png', 23848, '03dce5d4cff9435f9bab5d1b14cd3703.png');
INSERT INTO `os_patent_img` VALUES (6794, 1, '\\20220510\\0d056ca58cfa4ea4ad917b347a204eb2.png', 23849, '0d056ca58cfa4ea4ad917b347a204eb2.png');
INSERT INTO `os_patent_img` VALUES (6795, 1, '\\20220510\\5dae4bb5e51e46339d524fedea435c61.png', 23850, '5dae4bb5e51e46339d524fedea435c61.png');
INSERT INTO `os_patent_img` VALUES (6796, 1, '\\20220510\\a11e7ef98b514f74810a2be27ceeb486.png', 23851, 'a11e7ef98b514f74810a2be27ceeb486.png');
INSERT INTO `os_patent_img` VALUES (6797, 1, '\\20220510\\97fa32e100ce4620b9e265ca751c3b2d.png', 23852, '97fa32e100ce4620b9e265ca751c3b2d.png');
INSERT INTO `os_patent_img` VALUES (6798, 1, '\\20220510\\d6ae19a40f684156a872faa354aae91f.png', 23853, 'd6ae19a40f684156a872faa354aae91f.png');
INSERT INTO `os_patent_img` VALUES (6799, 1, '\\20220510\\2a9df802391e4547a6be00daaea34f5f.png', 23854, '2a9df802391e4547a6be00daaea34f5f.png');
INSERT INTO `os_patent_img` VALUES (6800, 1, '\\20220510\\db183ee8c61c48d8a7bb5b38325b902d.png', 23855, 'db183ee8c61c48d8a7bb5b38325b902d.png');
INSERT INTO `os_patent_img` VALUES (6801, 1, '\\20220510\\4cf3f138eaef4db08ad5509676e23ce2.png', 23856, '4cf3f138eaef4db08ad5509676e23ce2.png');
INSERT INTO `os_patent_img` VALUES (6802, 1, '\\20220510\\41676a19ac3c40458ebb9da09f69a1a4.png', 23857, '41676a19ac3c40458ebb9da09f69a1a4.png');
INSERT INTO `os_patent_img` VALUES (6803, 1, '\\20220510\\c40a75577f7d4f7f9a06af699b407fd8.png', 23858, 'c40a75577f7d4f7f9a06af699b407fd8.png');
INSERT INTO `os_patent_img` VALUES (6804, 1, '\\20220510\\0298b24272ff42d78988fb8facca0c99.png', 23859, '0298b24272ff42d78988fb8facca0c99.png');
INSERT INTO `os_patent_img` VALUES (6805, 1, '\\20220510\\a82f5e4d6484454cb518901477806ce9.png', 23860, 'a82f5e4d6484454cb518901477806ce9.png');
INSERT INTO `os_patent_img` VALUES (6806, 1, '\\20220510\\85741a7b276a463a85da82fcbf5e7b4b.png', 23861, '85741a7b276a463a85da82fcbf5e7b4b.png');
INSERT INTO `os_patent_img` VALUES (6807, 1, '\\20220510\\8d282134aafa48f39147c69c595cd839.png', 23862, '8d282134aafa48f39147c69c595cd839.png');
INSERT INTO `os_patent_img` VALUES (6808, 1, '\\20220510\\583507ed837842d5b2c122e684eb5e5e.png', 23863, '583507ed837842d5b2c122e684eb5e5e.png');
INSERT INTO `os_patent_img` VALUES (6809, 1, '\\20220510\\6ebee9c1ba1b4bc7aedb800327f6b895.png', 23864, '6ebee9c1ba1b4bc7aedb800327f6b895.png');
INSERT INTO `os_patent_img` VALUES (6810, 1, '\\20220510\\6353a439b09f420b8de0513cee033af3.png', 23865, '6353a439b09f420b8de0513cee033af3.png');
INSERT INTO `os_patent_img` VALUES (6811, 1, '\\20220510\\3f30ac4d65134d3a808d9cdfe0b39fc5.png', 23866, '3f30ac4d65134d3a808d9cdfe0b39fc5.png');
INSERT INTO `os_patent_img` VALUES (6812, 1, '\\20220510\\e3638c4b7bea46bbbd5b7ee2b38964d0.png', 23867, 'e3638c4b7bea46bbbd5b7ee2b38964d0.png');
INSERT INTO `os_patent_img` VALUES (6813, 1, '\\20220510\\381d85c18bc9420eada3530f7cd8f843.png', 23868, '381d85c18bc9420eada3530f7cd8f843.png');
INSERT INTO `os_patent_img` VALUES (6814, 1, '\\20220510\\7df4f4c1fdb940f5b4dfd40c0487394e.png', 23869, '7df4f4c1fdb940f5b4dfd40c0487394e.png');
INSERT INTO `os_patent_img` VALUES (6815, 1, '\\20220510\\a0a73cbf346c45078d2ecc831eb7861a.png', 23870, 'a0a73cbf346c45078d2ecc831eb7861a.png');
INSERT INTO `os_patent_img` VALUES (6816, 1, '\\20220510\\a510e2bcd733417681e537038d1a0158.png', 23871, 'a510e2bcd733417681e537038d1a0158.png');
INSERT INTO `os_patent_img` VALUES (6817, 1, '\\20220510\\9109fa510ef14f37b7c9185889cd2d5d.png', 23872, '9109fa510ef14f37b7c9185889cd2d5d.png');
INSERT INTO `os_patent_img` VALUES (6818, 1, '\\20220510\\3a7a59cb47f84bdc8fd7c4e2935ef9b2.png', 23873, '3a7a59cb47f84bdc8fd7c4e2935ef9b2.png');
INSERT INTO `os_patent_img` VALUES (6819, 1, '\\20220510\\a25390a8a20f4542b422c9979fa357d4.png', 23874, 'a25390a8a20f4542b422c9979fa357d4.png');
INSERT INTO `os_patent_img` VALUES (6820, 1, '\\20220510\\24b89f09c2e54aa3bb41045d436c5c86.png', 23875, '24b89f09c2e54aa3bb41045d436c5c86.png');
INSERT INTO `os_patent_img` VALUES (6821, 1, '\\20220510\\7174eed2ac794e2d99170b8b66dd8276.png', 23876, '7174eed2ac794e2d99170b8b66dd8276.png');
INSERT INTO `os_patent_img` VALUES (6822, 1, '\\20220510\\c4d969fe06dd4d229dc6a0c07b5ed0d8.png', 23877, 'c4d969fe06dd4d229dc6a0c07b5ed0d8.png');
INSERT INTO `os_patent_img` VALUES (6823, 1, '\\20220510\\4de1eea5b6c14d90b02f83a4f9625a56.png', 23878, '4de1eea5b6c14d90b02f83a4f9625a56.png');
INSERT INTO `os_patent_img` VALUES (6824, 1, '\\20220510\\4fd38b5d6a464004b9a40fc30f69e870.png', 23879, '4fd38b5d6a464004b9a40fc30f69e870.png');
INSERT INTO `os_patent_img` VALUES (6825, 1, '\\20220510\\9b1ed0690e90410080961714c8adf08a.png', 23880, '9b1ed0690e90410080961714c8adf08a.png');
INSERT INTO `os_patent_img` VALUES (6826, 1, '\\20220510\\b8c6d6e5d6444d77a1c518eb9a992942.png', 23881, 'b8c6d6e5d6444d77a1c518eb9a992942.png');
INSERT INTO `os_patent_img` VALUES (6827, 1, '\\20220510\\3d28badd45834e0db4315bd0f1d8e447.png', 23882, '3d28badd45834e0db4315bd0f1d8e447.png');
INSERT INTO `os_patent_img` VALUES (6828, 1, '\\20220510\\0e7d955e8fb6478dacd5d12989cbc236.png', 23883, '0e7d955e8fb6478dacd5d12989cbc236.png');
INSERT INTO `os_patent_img` VALUES (6829, 1, '\\20220510\\b1ce62de4bc14d748629f6cf019a2d56.png', 23884, 'b1ce62de4bc14d748629f6cf019a2d56.png');
INSERT INTO `os_patent_img` VALUES (6830, 1, '\\20220510\\8d2f59236a0148598e0dffab3afc3d2b.png', 23885, '8d2f59236a0148598e0dffab3afc3d2b.png');
INSERT INTO `os_patent_img` VALUES (6831, 1, '\\20220510\\d8bb54c99eb941dfac23e86537fc8996.png', 23886, 'd8bb54c99eb941dfac23e86537fc8996.png');
INSERT INTO `os_patent_img` VALUES (6832, 1, '\\20220510\\b536f4a9d46e4f3d8ce3478c0f0af932.png', 23887, 'b536f4a9d46e4f3d8ce3478c0f0af932.png');
INSERT INTO `os_patent_img` VALUES (6833, 1, '\\20220510\\0d27ccb8491f497198885d361d5d1fdd.png', 23888, '0d27ccb8491f497198885d361d5d1fdd.png');
INSERT INTO `os_patent_img` VALUES (6834, 1, '\\20220510\\e4d3ebf06cb149e9a04fff186185c60e.png', 23889, 'e4d3ebf06cb149e9a04fff186185c60e.png');
INSERT INTO `os_patent_img` VALUES (6835, 1, '\\20220510\\45d41f2533b2465897b709e9f870309f.png', 23890, '45d41f2533b2465897b709e9f870309f.png');
INSERT INTO `os_patent_img` VALUES (6836, 1, '\\20220510\\ccd307745a374a5e8fa7e56b3ec47f5d.png', 23891, 'ccd307745a374a5e8fa7e56b3ec47f5d.png');
INSERT INTO `os_patent_img` VALUES (6837, 1, '\\20220510\\0b89c08bbc0f4c89a70b4f5e21cadb2a.png', 23892, '0b89c08bbc0f4c89a70b4f5e21cadb2a.png');
INSERT INTO `os_patent_img` VALUES (6838, 1, '\\20220510\\21b04631ff04497ab8b3b788fbf373f3.png', 23893, '21b04631ff04497ab8b3b788fbf373f3.png');
INSERT INTO `os_patent_img` VALUES (6839, 1, '\\20220510\\b889358726174a0098975d1eee93f29f.png', 23894, 'b889358726174a0098975d1eee93f29f.png');
INSERT INTO `os_patent_img` VALUES (6840, 1, '\\20220510\\9e4dd6adb9d747bcb2ec3af9373ae13c.png', 23895, '9e4dd6adb9d747bcb2ec3af9373ae13c.png');
INSERT INTO `os_patent_img` VALUES (6841, 1, '\\20220510\\f386cd5ec9374e218c1e1f68b67e4d3d.png', 23896, 'f386cd5ec9374e218c1e1f68b67e4d3d.png');
INSERT INTO `os_patent_img` VALUES (6842, 1, '\\20220510\\5c7b29f20a35474b86a77dd8a9eeca35.png', 23897, '5c7b29f20a35474b86a77dd8a9eeca35.png');
INSERT INTO `os_patent_img` VALUES (6843, 1, '\\20220510\\1ff15a012a5b49ed843ca874376ded69.png', 23898, '1ff15a012a5b49ed843ca874376ded69.png');
INSERT INTO `os_patent_img` VALUES (6844, 1, '\\20220510\\e523dd4495134a2ea843530d06307822.png', 23899, 'e523dd4495134a2ea843530d06307822.png');
INSERT INTO `os_patent_img` VALUES (6845, 1, '\\20220510\\cbd5777b51e9435f838c8505d32b29d9.png', 23900, 'cbd5777b51e9435f838c8505d32b29d9.png');
INSERT INTO `os_patent_img` VALUES (6846, 1, '\\20220510\\4da314d805aa452b843d693e880569cb.png', 23901, '4da314d805aa452b843d693e880569cb.png');
INSERT INTO `os_patent_img` VALUES (6847, 1, '\\20220510\\2af13a94868f471b9c9d99fc86d2b308.png', 23902, '2af13a94868f471b9c9d99fc86d2b308.png');
INSERT INTO `os_patent_img` VALUES (6848, 1, '\\20220510\\cd88c073c1994c928ca369cf49f82b8d.png', 23903, 'cd88c073c1994c928ca369cf49f82b8d.png');
INSERT INTO `os_patent_img` VALUES (6849, 1, '\\20220510\\8aa2b953152e479d92a79ede4abf3ec6.png', 23904, '8aa2b953152e479d92a79ede4abf3ec6.png');
INSERT INTO `os_patent_img` VALUES (6850, 1, '\\20220510\\a9f35e4d1ff44876b50d072f870e7a58.png', 23905, 'a9f35e4d1ff44876b50d072f870e7a58.png');
INSERT INTO `os_patent_img` VALUES (6851, 1, '\\20220510\\2900fe05148543509fd8934d6e5433e3.png', 23906, '2900fe05148543509fd8934d6e5433e3.png');
INSERT INTO `os_patent_img` VALUES (6852, 1, '\\20220510\\d7826213bd9e48da9225c15ece4a3fdd.png', 23907, 'd7826213bd9e48da9225c15ece4a3fdd.png');
INSERT INTO `os_patent_img` VALUES (6853, 1, '\\20220510\\e04362d2c5ae49f1a82127d4a586b18d.png', 23908, 'e04362d2c5ae49f1a82127d4a586b18d.png');
INSERT INTO `os_patent_img` VALUES (6854, 1, '\\20220510\\a2943a24883b4e819495102468bf5223.png', 23909, 'a2943a24883b4e819495102468bf5223.png');
INSERT INTO `os_patent_img` VALUES (6855, 1, '\\20220510\\ee966e2ebf0842c6ba2a22427f963f0c.png', 23910, 'ee966e2ebf0842c6ba2a22427f963f0c.png');
INSERT INTO `os_patent_img` VALUES (6856, 1, '\\20220510\\855d6d940251424cb84353c9c5fad4c1.png', 23911, '855d6d940251424cb84353c9c5fad4c1.png');
INSERT INTO `os_patent_img` VALUES (6857, 1, '\\20220510\\65fa343f5f7840039ff0af7e9f00fb37.png', 23912, '65fa343f5f7840039ff0af7e9f00fb37.png');
INSERT INTO `os_patent_img` VALUES (6858, 1, '\\20220510\\058f2cf7a96547cd82e4bcf1a8660b8c.png', 23913, '058f2cf7a96547cd82e4bcf1a8660b8c.png');
INSERT INTO `os_patent_img` VALUES (6859, 1, '\\20220510\\00580fae030d4f649a9992fcfd707e49.png', 23914, '00580fae030d4f649a9992fcfd707e49.png');
INSERT INTO `os_patent_img` VALUES (6860, 1, '\\20220510\\b9b86101d3a7465697553ec055497d67.png', 23915, 'b9b86101d3a7465697553ec055497d67.png');
INSERT INTO `os_patent_img` VALUES (6861, 1, '\\20220510\\39952967d53e48898e63bd33bac75900.png', 23916, '39952967d53e48898e63bd33bac75900.png');
INSERT INTO `os_patent_img` VALUES (6862, 1, '\\20220510\\b3a2e62bf7c94a70bf7b47e04509f9c7.png', 23917, 'b3a2e62bf7c94a70bf7b47e04509f9c7.png');
INSERT INTO `os_patent_img` VALUES (6863, 1, '\\20220510\\925e2161b4874f9bb886634d078b30a1.png', 23918, '925e2161b4874f9bb886634d078b30a1.png');
INSERT INTO `os_patent_img` VALUES (6864, 1, '\\20220510\\01c38b8473de49aba79039d76879005b.png', 23919, '01c38b8473de49aba79039d76879005b.png');
INSERT INTO `os_patent_img` VALUES (6865, 1, '\\20220510\\56a6ef69bde54577917ff79f12626446.png', 23920, '56a6ef69bde54577917ff79f12626446.png');
INSERT INTO `os_patent_img` VALUES (6866, 1, '\\20220510\\72fbe243a7ec4c1db529ffb4a7908dcc.png', 23921, '72fbe243a7ec4c1db529ffb4a7908dcc.png');
INSERT INTO `os_patent_img` VALUES (6867, 1, '\\20220510\\d5bb6f303057438a9f37bd5628023ec7.png', 23922, 'd5bb6f303057438a9f37bd5628023ec7.png');
INSERT INTO `os_patent_img` VALUES (6868, 1, '\\20220510\\2d5ed2be5ada46008c76ae5c087adae5.png', 23923, '2d5ed2be5ada46008c76ae5c087adae5.png');
INSERT INTO `os_patent_img` VALUES (6869, 1, '\\20220510\\2ed5d45878904ebd8ed50bcf47672385.png', 23924, '2ed5d45878904ebd8ed50bcf47672385.png');
INSERT INTO `os_patent_img` VALUES (6870, 1, '\\20220510\\e745860167af4251a5a26bc08db4510b.png', 23925, 'e745860167af4251a5a26bc08db4510b.png');
INSERT INTO `os_patent_img` VALUES (6871, 1, '\\20220510\\2c14fb9059d04bdeb60b10bedde86c9d.png', 23926, '2c14fb9059d04bdeb60b10bedde86c9d.png');
INSERT INTO `os_patent_img` VALUES (6872, 1, '\\20220510\\573316784c024e3abed0cfac2c514d8e.png', 23927, '573316784c024e3abed0cfac2c514d8e.png');
INSERT INTO `os_patent_img` VALUES (6873, 1, '\\20220510\\823797fc7c734b299590188f59414ef2.png', 23928, '823797fc7c734b299590188f59414ef2.png');
INSERT INTO `os_patent_img` VALUES (6874, 1, '\\20220510\\f182c7d339664831829e3ca2bc7d05c1.png', 23929, 'f182c7d339664831829e3ca2bc7d05c1.png');
INSERT INTO `os_patent_img` VALUES (6875, 1, '\\20220510\\de956793058243389a51fd4f69300bf7.png', 23930, 'de956793058243389a51fd4f69300bf7.png');
INSERT INTO `os_patent_img` VALUES (6876, 1, '\\20220510\\789a367cd8154724b13661ae64c74f77.png', 23931, '789a367cd8154724b13661ae64c74f77.png');
INSERT INTO `os_patent_img` VALUES (6877, 1, '\\20220510\\b201ef639cec467092c868693234fabf.png', 23932, 'b201ef639cec467092c868693234fabf.png');
INSERT INTO `os_patent_img` VALUES (6878, 1, '\\20220510\\49314f54da864132b5e839ec8d0a9d6a.png', 23933, '49314f54da864132b5e839ec8d0a9d6a.png');
INSERT INTO `os_patent_img` VALUES (6879, 1, '\\20220510\\97a24d34f769418f855d1c0702b05b76.png', 23934, '97a24d34f769418f855d1c0702b05b76.png');
INSERT INTO `os_patent_img` VALUES (6880, 1, '\\20220510\\9aa575a5d83a45c980fb70c8be1083a9.png', 23935, '9aa575a5d83a45c980fb70c8be1083a9.png');
INSERT INTO `os_patent_img` VALUES (6881, 1, '\\20220510\\f921547e25f641d9b88a77c8286af3ae.png', 23936, 'f921547e25f641d9b88a77c8286af3ae.png');
INSERT INTO `os_patent_img` VALUES (6882, 1, '\\20220510\\17b7b512e9ec410198781cabc16a1ab7.png', 23937, '17b7b512e9ec410198781cabc16a1ab7.png');
INSERT INTO `os_patent_img` VALUES (6883, 1, '\\20220510\\d200d670e39544f887846ff998d94bb8.png', 23938, 'd200d670e39544f887846ff998d94bb8.png');
INSERT INTO `os_patent_img` VALUES (6884, 1, '\\20220510\\32e43c09e64d4e74b081ca13a9314be2.png', 23939, '32e43c09e64d4e74b081ca13a9314be2.png');
INSERT INTO `os_patent_img` VALUES (6885, 1, '\\20220510\\225017286a48450d8b4789cf74481d05.png', 23940, '225017286a48450d8b4789cf74481d05.png');
INSERT INTO `os_patent_img` VALUES (6886, 1, '\\20220510\\c8e4de8ff6934560a4de070c76edf961.png', 23941, 'c8e4de8ff6934560a4de070c76edf961.png');
INSERT INTO `os_patent_img` VALUES (6887, 1, '\\20220510\\8b0128e58ae24a5cb987c1b866137def.png', 23942, '8b0128e58ae24a5cb987c1b866137def.png');
INSERT INTO `os_patent_img` VALUES (6888, 1, '\\20220510\\5e9ee5c600844e86a18db9f8a81ab596.png', 23943, '5e9ee5c600844e86a18db9f8a81ab596.png');
INSERT INTO `os_patent_img` VALUES (6889, 1, '\\20220510\\730128223c87406281b533bd2aab9a0b.png', 23944, '730128223c87406281b533bd2aab9a0b.png');
INSERT INTO `os_patent_img` VALUES (6890, 1, '\\20220510\\83828fbf258040e7b65fd47c6e16922c.png', 23945, '83828fbf258040e7b65fd47c6e16922c.png');
INSERT INTO `os_patent_img` VALUES (6891, 1, '\\20220510\\db7e41b01eae46f2a03969abeb3ccfce.png', 23946, 'db7e41b01eae46f2a03969abeb3ccfce.png');
INSERT INTO `os_patent_img` VALUES (6892, 1, '\\20220510\\d8f590d2472542adb0c78a610f9b66c7.png', 23947, 'd8f590d2472542adb0c78a610f9b66c7.png');
INSERT INTO `os_patent_img` VALUES (6893, 1, '\\20220510\\96d53d1728af4512a39850386d13fbff.png', 23948, '96d53d1728af4512a39850386d13fbff.png');
INSERT INTO `os_patent_img` VALUES (6894, 1, '\\20220510\\c115912ca7db47db95d35a35e6b616d3.png', 23949, 'c115912ca7db47db95d35a35e6b616d3.png');
INSERT INTO `os_patent_img` VALUES (6895, 1, '\\20220510\\81ef1a35f5b545598fd554a591b03e62.png', 23950, '81ef1a35f5b545598fd554a591b03e62.png');
INSERT INTO `os_patent_img` VALUES (6896, 1, '\\20220510\\7dcbc163fee84858b337e5df8c3f1e50.png', 23951, '7dcbc163fee84858b337e5df8c3f1e50.png');
INSERT INTO `os_patent_img` VALUES (6897, 1, '\\20220510\\a96293fcdb8f4f62b7c3fb89ec5593a3.png', 23952, 'a96293fcdb8f4f62b7c3fb89ec5593a3.png');
INSERT INTO `os_patent_img` VALUES (6898, 1, '\\20220510\\54fdef948d9b42708074595127ff3256.png', 23953, '54fdef948d9b42708074595127ff3256.png');
INSERT INTO `os_patent_img` VALUES (6899, 1, '\\20220510\\6e025e8009dd4eb389e21b2c6a0d0d86.png', 23954, '6e025e8009dd4eb389e21b2c6a0d0d86.png');
INSERT INTO `os_patent_img` VALUES (6900, 1, '\\20220510\\815293337e9f41e4b118f7403b1a36a8.png', 23955, '815293337e9f41e4b118f7403b1a36a8.png');
INSERT INTO `os_patent_img` VALUES (6901, 1, '\\20220510\\325244c75cfb4aabb6bf7b24a8a8ee37.png', 23956, '325244c75cfb4aabb6bf7b24a8a8ee37.png');
INSERT INTO `os_patent_img` VALUES (6902, 1, '\\20220510\\bd71a65f235f43f498882b582b550537.png', 23957, 'bd71a65f235f43f498882b582b550537.png');
INSERT INTO `os_patent_img` VALUES (6903, 1, '\\20220510\\905d64583cd548509e3b7fb2f64b36f3.png', 23958, '905d64583cd548509e3b7fb2f64b36f3.png');
INSERT INTO `os_patent_img` VALUES (6904, 1, '\\20220510\\6cd4804e3559480495d965e1694f59cd.png', 23959, '6cd4804e3559480495d965e1694f59cd.png');
INSERT INTO `os_patent_img` VALUES (6905, 1, '\\20220510\\8f1c8faf8a1b4564ac8be9744ed0f7d0.png', 23960, '8f1c8faf8a1b4564ac8be9744ed0f7d0.png');
INSERT INTO `os_patent_img` VALUES (6906, 1, '\\20220510\\0f083ba9d098442e836f12c35532e79f.png', 23961, '0f083ba9d098442e836f12c35532e79f.png');
INSERT INTO `os_patent_img` VALUES (6907, 1, '\\20220510\\3e1def4378e64e5c83904d8613e31736.png', 23962, '3e1def4378e64e5c83904d8613e31736.png');
INSERT INTO `os_patent_img` VALUES (6908, 1, '\\20220510\\08d410accad44cc7842e8908094ee74a.png', 23963, '08d410accad44cc7842e8908094ee74a.png');
INSERT INTO `os_patent_img` VALUES (6909, 1, '\\20220510\\fce3d14afe22412daefd4bd2e78e511f.png', 23964, 'fce3d14afe22412daefd4bd2e78e511f.png');
INSERT INTO `os_patent_img` VALUES (6910, 1, '\\20220510\\c4f68988388c4dc4acf81994b163df6e.png', 23965, 'c4f68988388c4dc4acf81994b163df6e.png');
INSERT INTO `os_patent_img` VALUES (6911, 1, '\\20220510\\1f6d6c4291c842018e79a67ee3420aaf.png', 23966, '1f6d6c4291c842018e79a67ee3420aaf.png');
INSERT INTO `os_patent_img` VALUES (6912, 1, '\\20220510\\1e180d134ca340c8a5a22c3c769182ad.png', 23967, '1e180d134ca340c8a5a22c3c769182ad.png');
INSERT INTO `os_patent_img` VALUES (6913, 1, '\\20220510\\edfbdae48ea945dd8b4f19fbf8d85958.png', 23968, 'edfbdae48ea945dd8b4f19fbf8d85958.png');
INSERT INTO `os_patent_img` VALUES (6914, 1, '\\20220510\\b5ff982c85c7437f954acd14241e5c15.png', 23969, 'b5ff982c85c7437f954acd14241e5c15.png');
INSERT INTO `os_patent_img` VALUES (6915, 1, '\\20220510\\2b58c0df44234fda98a5350c405a72a9.png', 23970, '2b58c0df44234fda98a5350c405a72a9.png');
INSERT INTO `os_patent_img` VALUES (6916, 1, '\\20220510\\8572ece704b14d44ab18f3fa733c8f35.png', 23971, '8572ece704b14d44ab18f3fa733c8f35.png');
INSERT INTO `os_patent_img` VALUES (6917, 1, '\\20220510\\fcaa671f9b1c4d2782257c685afc18ed.png', 23972, 'fcaa671f9b1c4d2782257c685afc18ed.png');
INSERT INTO `os_patent_img` VALUES (6918, 1, '\\20220510\\1e262d921a774dfa88bfe66285ee79ec.png', 23973, '1e262d921a774dfa88bfe66285ee79ec.png');
INSERT INTO `os_patent_img` VALUES (6919, 1, '\\20220510\\a02c7fb0d721414d80065df0cbc79683.png', 23974, 'a02c7fb0d721414d80065df0cbc79683.png');
INSERT INTO `os_patent_img` VALUES (6920, 1, '\\20220510\\d1a166345c9544c3aa331f72ba21e128.png', 23975, 'd1a166345c9544c3aa331f72ba21e128.png');
INSERT INTO `os_patent_img` VALUES (6921, 1, '\\20220510\\1be61dfd6b3c407bacf1b22a30cce98b.png', 23976, '1be61dfd6b3c407bacf1b22a30cce98b.png');
INSERT INTO `os_patent_img` VALUES (6922, 1, '\\20220510\\61e5fc4a0eb9454a8a7bd1abafe573d6.png', 23977, '61e5fc4a0eb9454a8a7bd1abafe573d6.png');
INSERT INTO `os_patent_img` VALUES (6923, 1, '\\20220510\\dd8ef695c5534e138d07683c00abdacc.png', 23978, 'dd8ef695c5534e138d07683c00abdacc.png');
INSERT INTO `os_patent_img` VALUES (6924, 1, '\\20220510\\ae340f6bcfea41039d0287526cedad36.png', 23979, 'ae340f6bcfea41039d0287526cedad36.png');
INSERT INTO `os_patent_img` VALUES (6925, 1, '\\20220510\\29d9f894ea5540d08f3c9255eaf70255.png', 23980, '29d9f894ea5540d08f3c9255eaf70255.png');
INSERT INTO `os_patent_img` VALUES (6926, 1, '\\20220510\\56169e1fffa744d3b4e97a17c3c9a8b6.png', 23981, '56169e1fffa744d3b4e97a17c3c9a8b6.png');
INSERT INTO `os_patent_img` VALUES (6927, 1, '\\20220510\\cb3230273f4c45518000d0a3b7b0cb5d.png', 23982, 'cb3230273f4c45518000d0a3b7b0cb5d.png');
INSERT INTO `os_patent_img` VALUES (6928, 1, '\\20220510\\66862cf1be3a43468c444e7d2777c592.png', 23983, '66862cf1be3a43468c444e7d2777c592.png');
INSERT INTO `os_patent_img` VALUES (6929, 1, '\\20220510\\547b47c373b74490af27af69e5914882.png', 23984, '547b47c373b74490af27af69e5914882.png');
INSERT INTO `os_patent_img` VALUES (6930, 1, '\\20220510\\779568c9f1ca4a68821bb0d932c88498.png', 23985, '779568c9f1ca4a68821bb0d932c88498.png');
INSERT INTO `os_patent_img` VALUES (6931, 1, '\\20220510\\98c5a90b001743329d61ce70cf084bc3.png', 23986, '98c5a90b001743329d61ce70cf084bc3.png');
INSERT INTO `os_patent_img` VALUES (6932, 1, '\\20220510\\57ae7aba85494f9ebbfbb37f6621db4e.png', 23987, '57ae7aba85494f9ebbfbb37f6621db4e.png');
INSERT INTO `os_patent_img` VALUES (6933, 1, '\\20220510\\c0abff6c304b4bab81222458a6817dbd.png', 23988, 'c0abff6c304b4bab81222458a6817dbd.png');
INSERT INTO `os_patent_img` VALUES (6934, 1, '\\20220510\\f83ba1874b5145c9bf66536789dae5cc.png', 23989, 'f83ba1874b5145c9bf66536789dae5cc.png');
INSERT INTO `os_patent_img` VALUES (6935, 1, '\\20220510\\d3b79ac8cc74402fbcd0b28577664c7d.png', 23990, 'd3b79ac8cc74402fbcd0b28577664c7d.png');
INSERT INTO `os_patent_img` VALUES (6936, 1, '\\20220510\\f65272342e0642c781f017f72bb90c60.png', 23991, 'f65272342e0642c781f017f72bb90c60.png');
INSERT INTO `os_patent_img` VALUES (6937, 1, '\\20220510\\a7d1b5fcdf5d4c3ba091e755b45efd52.png', 23992, 'a7d1b5fcdf5d4c3ba091e755b45efd52.png');
INSERT INTO `os_patent_img` VALUES (6938, 1, '\\20220510\\a8196ac2b62840519b08f5d83d5299d6.png', 23993, 'a8196ac2b62840519b08f5d83d5299d6.png');
INSERT INTO `os_patent_img` VALUES (6939, 1, '\\20220510\\5f2b5b66b4f844768d3e66a696053d54.png', 23994, '5f2b5b66b4f844768d3e66a696053d54.png');
INSERT INTO `os_patent_img` VALUES (6940, 1, '\\20220510\\461325373208448994a451e3de54bb63.png', 23995, '461325373208448994a451e3de54bb63.png');
INSERT INTO `os_patent_img` VALUES (6941, 1, '\\20220510\\0580d2641b384d8c9cefe7d466a97d8f.png', 23996, '0580d2641b384d8c9cefe7d466a97d8f.png');
INSERT INTO `os_patent_img` VALUES (6942, 1, '\\20220510\\1996f8b272de417883b303463efb66f9.png', 23997, '1996f8b272de417883b303463efb66f9.png');
INSERT INTO `os_patent_img` VALUES (6943, 1, '\\20220510\\8d00b742a242469b949c7c2dacad8412.png', 23998, '8d00b742a242469b949c7c2dacad8412.png');
INSERT INTO `os_patent_img` VALUES (6944, 1, '\\20220510\\e90900479bb042d0b75f3e6d78bc3e1b.png', 23999, 'e90900479bb042d0b75f3e6d78bc3e1b.png');
INSERT INTO `os_patent_img` VALUES (6945, 1, '\\20220510\\35fa33b938e247c3a52df207153ca559.png', 24000, '35fa33b938e247c3a52df207153ca559.png');
INSERT INTO `os_patent_img` VALUES (6946, 1, '\\20220510\\82b775bf357046769c5102fcb1b6f65e.png', 24001, '82b775bf357046769c5102fcb1b6f65e.png');
INSERT INTO `os_patent_img` VALUES (6947, 1, '\\20220510\\d7e37df6c96c4710bc80c49c38037860.png', 24002, 'd7e37df6c96c4710bc80c49c38037860.png');
INSERT INTO `os_patent_img` VALUES (6948, 1, '\\20220510\\9d3b3cb456bb4489b58ff91bfe074d1e.png', 24003, '9d3b3cb456bb4489b58ff91bfe074d1e.png');
INSERT INTO `os_patent_img` VALUES (6949, 1, '\\20220510\\abc7861409db490b990fed3d6b02ac73.png', 24004, 'abc7861409db490b990fed3d6b02ac73.png');
INSERT INTO `os_patent_img` VALUES (6950, 1, '\\20220510\\b600f172cf21484e93faa82e1d6dcc6a.png', 24005, 'b600f172cf21484e93faa82e1d6dcc6a.png');
INSERT INTO `os_patent_img` VALUES (6951, 1, '\\20220510\\41d7e84738414f7a89c68dd9a1e8ee4d.png', 24006, '41d7e84738414f7a89c68dd9a1e8ee4d.png');
INSERT INTO `os_patent_img` VALUES (6952, 1, '\\20220510\\51c8aab13c724eb49790f993770aeaed.png', 24007, '51c8aab13c724eb49790f993770aeaed.png');
INSERT INTO `os_patent_img` VALUES (6953, 1, '\\20220510\\1fe6f5e99ca54aee9f04234d6c62decf.png', 24008, '1fe6f5e99ca54aee9f04234d6c62decf.png');
INSERT INTO `os_patent_img` VALUES (6954, 1, '\\20220510\\9b472967bb37492896abf6423253b74a.png', 24009, '9b472967bb37492896abf6423253b74a.png');
INSERT INTO `os_patent_img` VALUES (6955, 1, '\\20220510\\430f2caefdb0472a8a477f8735dafec3.png', 24010, '430f2caefdb0472a8a477f8735dafec3.png');
INSERT INTO `os_patent_img` VALUES (6956, 1, '\\20220510\\5b3ae49ab2334985a5d18ca4b79b40c4.png', 24011, '5b3ae49ab2334985a5d18ca4b79b40c4.png');
INSERT INTO `os_patent_img` VALUES (6957, 1, '\\20220510\\775c352972c641c1a572ae0434c1b2f9.png', 24012, '775c352972c641c1a572ae0434c1b2f9.png');
INSERT INTO `os_patent_img` VALUES (6958, 1, '\\20220510\\8b9c85f26b634921bf42582c3bd399b5.png', 24013, '8b9c85f26b634921bf42582c3bd399b5.png');
INSERT INTO `os_patent_img` VALUES (6959, 1, '\\20220510\\a7c9624dd18d421fb405b0fc35fc9214.png', 24014, 'a7c9624dd18d421fb405b0fc35fc9214.png');
INSERT INTO `os_patent_img` VALUES (6960, 1, '\\20220510\\df2b92d8151a4759a59745e36293e8e4.png', 24015, 'df2b92d8151a4759a59745e36293e8e4.png');
INSERT INTO `os_patent_img` VALUES (6961, 1, '\\20220510\\7e1d6e7214a54678ae6392c0915c1e14.png', 24016, '7e1d6e7214a54678ae6392c0915c1e14.png');
INSERT INTO `os_patent_img` VALUES (6962, 1, '\\20220510\\85b1cc5e0fd348659abd94be3d1ab926.png', 24017, '85b1cc5e0fd348659abd94be3d1ab926.png');
INSERT INTO `os_patent_img` VALUES (6963, 1, '\\20220510\\a6d6ad965b5d4d8895365dd6072aa208.png', 24018, 'a6d6ad965b5d4d8895365dd6072aa208.png');
INSERT INTO `os_patent_img` VALUES (6964, 1, '\\20220510\\e897583a0d1c4e1fa88a6b2c1ae4e159.png', 24019, 'e897583a0d1c4e1fa88a6b2c1ae4e159.png');
INSERT INTO `os_patent_img` VALUES (6965, 1, '\\20220510\\d46ba2b3ed194d66a650666cfd0a5c17.png', 24020, 'd46ba2b3ed194d66a650666cfd0a5c17.png');
INSERT INTO `os_patent_img` VALUES (6966, 1, '\\20220510\\9c26118c83c941a5a301e6f2123350cc.png', 24021, '9c26118c83c941a5a301e6f2123350cc.png');
INSERT INTO `os_patent_img` VALUES (6967, 1, '\\20220510\\f239f27ba4fa4c3eae9c62e456b55e55.png', 24022, 'f239f27ba4fa4c3eae9c62e456b55e55.png');
INSERT INTO `os_patent_img` VALUES (6968, 1, '\\20220510\\116ff66be0a041c98f0b5379328d2eeb.png', 24023, '116ff66be0a041c98f0b5379328d2eeb.png');
INSERT INTO `os_patent_img` VALUES (6969, 1, '\\20220510\\1bca40ee33c1403385112db0df99b4d3.png', 24024, '1bca40ee33c1403385112db0df99b4d3.png');
INSERT INTO `os_patent_img` VALUES (6970, 1, '\\20220510\\99026ca600404006b2d05231ef6f3406.png', 24025, '99026ca600404006b2d05231ef6f3406.png');
INSERT INTO `os_patent_img` VALUES (6971, 1, '\\20220510\\d10e3235e8ff424a8cd9a408418cdb99.png', 24026, 'd10e3235e8ff424a8cd9a408418cdb99.png');
INSERT INTO `os_patent_img` VALUES (6972, 1, '\\20220510\\e551b01846b6447fb92eed9a1d804d85.png', 24027, 'e551b01846b6447fb92eed9a1d804d85.png');
INSERT INTO `os_patent_img` VALUES (6973, 1, '\\20220510\\f54c43506fe34bd789b3275a5d5eb8a4.png', 24028, 'f54c43506fe34bd789b3275a5d5eb8a4.png');
INSERT INTO `os_patent_img` VALUES (6974, 1, '\\20220510\\9439b4050a1c4d7fae2b116eee499f7c.png', 24029, '9439b4050a1c4d7fae2b116eee499f7c.png');
INSERT INTO `os_patent_img` VALUES (6975, 1, '\\20220510\\57cdd1ad9605420a918a14b362fada16.png', 24030, '57cdd1ad9605420a918a14b362fada16.png');
INSERT INTO `os_patent_img` VALUES (6976, 1, '\\20220510\\e4c6868fa78042039514c2fcc8b01153.png', 24031, 'e4c6868fa78042039514c2fcc8b01153.png');
INSERT INTO `os_patent_img` VALUES (6977, 1, '\\20220510\\20f4918e3f384baba06aaa825da962be.png', 24032, '20f4918e3f384baba06aaa825da962be.png');
INSERT INTO `os_patent_img` VALUES (6978, 1, '\\20220510\\c8bfded1c1974c00aabd64a87ffbf100.png', 24033, 'c8bfded1c1974c00aabd64a87ffbf100.png');
INSERT INTO `os_patent_img` VALUES (6979, 1, '\\20220510\\d3c2c35c4c8d4cc6b8b08f1b051761f2.png', 24034, 'd3c2c35c4c8d4cc6b8b08f1b051761f2.png');
INSERT INTO `os_patent_img` VALUES (6980, 1, '\\20220510\\c9d81cfe732e44c8ab98276cb8889729.png', 24035, 'c9d81cfe732e44c8ab98276cb8889729.png');
INSERT INTO `os_patent_img` VALUES (6981, 1, '\\20220510\\875a955a9ea746cc918f0968e18e0d6e.png', 24036, '875a955a9ea746cc918f0968e18e0d6e.png');
INSERT INTO `os_patent_img` VALUES (6982, 1, '\\20220510\\a37a9883c8a44f4f941b8e21553788c1.png', 24037, 'a37a9883c8a44f4f941b8e21553788c1.png');
INSERT INTO `os_patent_img` VALUES (6983, 1, '\\20220510\\cf2a7939564b4b9993c2e711af0e8fde.png', 24038, 'cf2a7939564b4b9993c2e711af0e8fde.png');
INSERT INTO `os_patent_img` VALUES (6984, 1, '\\20220510\\bd843a51bdeb4418b09c5ee1eb410aad.png', 24039, 'bd843a51bdeb4418b09c5ee1eb410aad.png');
INSERT INTO `os_patent_img` VALUES (6985, 1, '\\20220510\\9b0f0627f35a4a3a88abf26f137949aa.png', 24040, '9b0f0627f35a4a3a88abf26f137949aa.png');
INSERT INTO `os_patent_img` VALUES (6986, 1, '\\20220510\\d70ab3e8c79248b6aea96fe1669ed577.png', 24041, 'd70ab3e8c79248b6aea96fe1669ed577.png');
INSERT INTO `os_patent_img` VALUES (6987, 1, '\\20220510\\fb32393fa7c24986bd858d43c9bf3267.png', 24042, 'fb32393fa7c24986bd858d43c9bf3267.png');
INSERT INTO `os_patent_img` VALUES (6988, 1, '\\20220510\\f310344ab6c44afca6323a27c86ddbe1.png', 24043, 'f310344ab6c44afca6323a27c86ddbe1.png');
INSERT INTO `os_patent_img` VALUES (6989, 1, '\\20220510\\60f8549ca9b84f1294660d54da83650a.png', 24044, '60f8549ca9b84f1294660d54da83650a.png');
INSERT INTO `os_patent_img` VALUES (6990, 1, '\\20220510\\6e670d8e184b4ca6b58b47602eb00e6b.png', 24045, '6e670d8e184b4ca6b58b47602eb00e6b.png');
INSERT INTO `os_patent_img` VALUES (6991, 1, '\\20220510\\f8061f26f9a74a849c6943de87a025db.png', 24046, 'f8061f26f9a74a849c6943de87a025db.png');
INSERT INTO `os_patent_img` VALUES (6992, 1, '\\20220510\\6ac06020161f4d81b3040fba99e81aac.png', 24047, '6ac06020161f4d81b3040fba99e81aac.png');
INSERT INTO `os_patent_img` VALUES (6993, 1, '\\20220510\\cd3b92a6ccd744a082d01298c79901a7.png', 24048, 'cd3b92a6ccd744a082d01298c79901a7.png');
INSERT INTO `os_patent_img` VALUES (6994, 1, '\\20220510\\ef261e38c1874667ad1cf10e97e48b43.png', 24049, 'ef261e38c1874667ad1cf10e97e48b43.png');
INSERT INTO `os_patent_img` VALUES (6995, 1, '\\20220510\\6191f5e9c3a742b8bae872628641cc7e.png', 24050, '6191f5e9c3a742b8bae872628641cc7e.png');
INSERT INTO `os_patent_img` VALUES (6996, 1, '\\20220510\\f0b6d608fee84f7c8d3440dca099f0c3.png', 24051, 'f0b6d608fee84f7c8d3440dca099f0c3.png');
INSERT INTO `os_patent_img` VALUES (6997, 1, '\\20220510\\7988f9a9eab645cfa3ce30b55dbd56e1.png', 24052, '7988f9a9eab645cfa3ce30b55dbd56e1.png');
INSERT INTO `os_patent_img` VALUES (6998, 1, '\\20220510\\993c446157ad4876957eed5e18adee7d.png', 24053, '993c446157ad4876957eed5e18adee7d.png');
INSERT INTO `os_patent_img` VALUES (6999, 1, '\\20220510\\77b12966742a4987b9d3e14fcc169188.png', 24054, '77b12966742a4987b9d3e14fcc169188.png');
INSERT INTO `os_patent_img` VALUES (7000, 1, '\\20220510\\89fef4e169974ebe841cc52c35100b2b.png', 24055, '89fef4e169974ebe841cc52c35100b2b.png');
INSERT INTO `os_patent_img` VALUES (7001, 1, '\\20220510\\e96e4a515cfd4c9fbfe861b1cbf440f6.png', 24056, 'e96e4a515cfd4c9fbfe861b1cbf440f6.png');
INSERT INTO `os_patent_img` VALUES (7002, 1, '\\20220510\\cdad7ff235b54d0ab1372256a3c2cee0.png', 24057, 'cdad7ff235b54d0ab1372256a3c2cee0.png');
INSERT INTO `os_patent_img` VALUES (7003, 1, '\\20220510\\8aa34c9b8a94432f87e7dbda7d6627d1.png', 24058, '8aa34c9b8a94432f87e7dbda7d6627d1.png');
INSERT INTO `os_patent_img` VALUES (7004, 1, '\\20220510\\b739b58c2bfe43e7b5c5cf5aac70c229.png', 24059, 'b739b58c2bfe43e7b5c5cf5aac70c229.png');
INSERT INTO `os_patent_img` VALUES (7005, 1, '\\20220510\\8b3a1f1596b74e7ca1fb97ae90e0a052.png', 24060, '8b3a1f1596b74e7ca1fb97ae90e0a052.png');
INSERT INTO `os_patent_img` VALUES (7006, 1, '\\20220510\\b1e097772f6840debf6a981cd2413762.png', 24061, 'b1e097772f6840debf6a981cd2413762.png');
INSERT INTO `os_patent_img` VALUES (7007, 1, '\\20220510\\edc76f4d9f444636813b7dca10188730.png', 24062, 'edc76f4d9f444636813b7dca10188730.png');
INSERT INTO `os_patent_img` VALUES (7008, 1, '\\20220510\\91e371fc11484d6994d3aaea714935dc.png', 24063, '91e371fc11484d6994d3aaea714935dc.png');
INSERT INTO `os_patent_img` VALUES (7009, 1, '\\20220510\\d96dab9c305b4f7dad4eb4da21d35871.png', 24064, 'd96dab9c305b4f7dad4eb4da21d35871.png');
INSERT INTO `os_patent_img` VALUES (7069, 1, '\\20220526\\10efdd676de14b7d9237d7a57d7b4806.png', 22746, '10efdd676de14b7d9237d7a57d7b4806.png');
INSERT INTO `os_patent_img` VALUES (7070, 1, '\\20220530\\d9e2f912b2954336b39bf2f949fff05c.jpeg', 22745, 'd9e2f912b2954336b39bf2f949fff05c.jpeg');
INSERT INTO `os_patent_img` VALUES (7071, 0, '\\20220530\\5ba49e35afdf46c98f74eb559bed4c63.png', 22745, '5ba49e35afdf46c98f74eb559bed4c63.png');
INSERT INTO `os_patent_img` VALUES (7073, 1, '\\20220609\\3cece2a48ef440d7b1264d2a0cd50145.png', 24065, '3cece2a48ef440d7b1264d2a0cd50145.png');
INSERT INTO `os_patent_img` VALUES (7074, 1, '\\20220609\\e613d5bc034a4360a1f8a9da1217f118.png', 24066, 'e613d5bc034a4360a1f8a9da1217f118.png');
INSERT INTO `os_patent_img` VALUES (7075, 1, '\\20220609\\40027a48428e46db8e7cf6d6ad16628e.png', 24067, '40027a48428e46db8e7cf6d6ad16628e.png');
INSERT INTO `os_patent_img` VALUES (7076, 1, '\\20220609\\9e3329ee31be4bb8a412f56187e86e74.png', 24068, '9e3329ee31be4bb8a412f56187e86e74.png');
INSERT INTO `os_patent_img` VALUES (7077, 1, '\\20220609\\035dc35d0e6b4f5f98ce6e5b73ce94da.png', 24069, '035dc35d0e6b4f5f98ce6e5b73ce94da.png');
INSERT INTO `os_patent_img` VALUES (7078, 1, '\\20220609\\642be8fc6f574f1584a242663c7c8830.png', 24070, '642be8fc6f574f1584a242663c7c8830.png');
INSERT INTO `os_patent_img` VALUES (7079, 1, '\\20220609\\009fd7e1868347bbb9e6b3623b018a96.png', 24071, '009fd7e1868347bbb9e6b3623b018a96.png');
INSERT INTO `os_patent_img` VALUES (7080, 1, '\\20220609\\9f638c5c4f9e4b399485c429e32370ab.png', 24072, '9f638c5c4f9e4b399485c429e32370ab.png');
INSERT INTO `os_patent_img` VALUES (7081, 1, '\\20220609\\c05a4f613b544bf1bd9d8a6f782f53a5.png', 24073, 'c05a4f613b544bf1bd9d8a6f782f53a5.png');

-- ----------------------------
-- Table structure for os_patent_instruction
-- ----------------------------
DROP TABLE IF EXISTS `os_patent_instruction`;
CREATE TABLE `os_patent_instruction`  (
  `id` int(0) UNSIGNED NOT NULL AUTO_INCREMENT COMMENT 'ID',
  `patent_no` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT '' COMMENT '附件名称',
  `url` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '附件上传地址',
  `patent_id` int(0) NULL DEFAULT NULL COMMENT '专利ID',
  `type` int(0) NULL DEFAULT NULL COMMENT '类型',
  `size` int(0) NULL DEFAULT 0 COMMENT '大小',
  `file_name` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '文件名称',
  `remark` varchar(255) CHARACTER SET utf8 COLLATE utf8_general_ci NULL DEFAULT NULL COMMENT '备注',
  `create_by` int(0) NULL DEFAULT 1 COMMENT '上传人',
  `status` int(0) NULL DEFAULT 1 COMMENT '状态',
  `create_time` datetime(0) NULL DEFAULT NULL COMMENT '上传时间',
  `update_time` datetime(0) NULL DEFAULT NULL COMMENT '更新时间',
  PRIMARY KEY (`id`) USING BTREE
) ENGINE = InnoDB AUTO_INCREMENT = 7332 CHARACTER SET = utf8 COLLATE = utf8_general_ci COMMENT = '专利说明书' ROW_FORMAT = Dynamic;

-- ----------------------------
-- Records of os_patent_instruction
-- ----------------------------
INSERT INTO `os_patent_instruction` VALUES (6554, 'EP1338359A1', '\\20220510\\420925c1d2964b09940be72d659459bc.pdf', NULL, 1, 435020, '420925c1d2964b09940be72d659459bc.pdf', NULL, 1, 1, '2022-05-10 07:14:38', '2022-05-10 07:42:23');
INSERT INTO `os_patent_instruction` VALUES (6555, 'EP3503130A1', '\\20220510\\5f54597c27594bc4ad12dc03811444cd.pdf', NULL, 1, 509384, '5f54597c27594bc4ad12dc03811444cd.pdf', NULL, 1, 1, '2022-05-10 07:14:38', '2022-05-10 07:42:23');
INSERT INTO `os_patent_instruction` VALUES (6556, 'EP3680045A1', '\\20220510\\e147be70ea57446ca4f7798a0162b387.pdf', NULL, 1, 784096, 'e147be70ea57446ca4f7798a0162b387.pdf', NULL, 1, 1, '2022-05-10 07:14:38', '2022-05-10 07:42:23');
INSERT INTO `os_patent_instruction` VALUES (6557, 'US20040101429A1', '\\20220510\\a65a5bb221d74fa2a23997109fa6c52e.pdf', NULL, 1, 1377122, 'a65a5bb221d74fa2a23997109fa6c52e.pdf', NULL, 1, 1, '2022-05-10 07:14:39', '2022-05-10 07:42:24');
INSERT INTO `os_patent_instruction` VALUES (6558, 'WO2014104205A1', '\\20220510\\02b869cd896e4d82a3e61ba8000e3f12.pdf', NULL, 1, 1846253, '02b869cd896e4d82a3e61ba8000e3f12.pdf', NULL, 1, 1, '2022-05-10 07:14:39', '2022-05-10 07:42:24');
INSERT INTO `os_patent_instruction` VALUES (6559, 'WO2014115876A1', '\\20220510\\038d927ae6cf45f7a3980dc9267f88c2.pdf', NULL, 1, 2401353, '038d927ae6cf45f7a3980dc9267f88c2.pdf', NULL, 1, 1, '2022-05-10 07:14:39', '2022-05-10 07:42:24');
INSERT INTO `os_patent_instruction` VALUES (6560, 'WO2014192874A1', '\\20220510\\9102e32cae2a4235833e8bcf2812c4ef.pdf', NULL, 1, 625055, '9102e32cae2a4235833e8bcf2812c4ef.pdf', NULL, 1, 1, '2022-05-10 07:14:39', '2022-05-10 07:42:24');
INSERT INTO `os_patent_instruction` VALUES (6561, 'WO2015147181A1', '\\20220510\\a5baa865b2d04fe286f4be3682a03bdd.pdf', NULL, 1, 2327302, 'a5baa865b2d04fe286f4be3682a03bdd.pdf', NULL, 1, 1, '2022-05-10 07:14:39', '2022-05-10 07:42:24');
INSERT INTO `os_patent_instruction` VALUES (6562, 'WO2017034009A1', '\\20220510\\99a6ca7252644df89ca3eb88d64ebaf6.pdf', NULL, 1, 1530097, '99a6ca7252644df89ca3eb88d64ebaf6.pdf', NULL, 1, 1, '2022-05-10 07:14:39', '2022-05-10 07:42:24');
INSERT INTO `os_patent_instruction` VALUES (6563, 'WO2017170347A1', '\\20220510\\c06bf7d0c3434593a10c8a5775a792df.pdf', NULL, 1, 1219853, 'c06bf7d0c3434593a10c8a5775a792df.pdf', NULL, 1, 1, '2022-05-10 07:14:39', '2022-05-10 07:42:24');
INSERT INTO `os_patent_instruction` VALUES (6575, 'EP1408518A2', '\\20220510\\a3d47e5a85ed45d3bf677dd31e89a94f.pdf', NULL, 1, 393825, 'a3d47e5a85ed45d3bf677dd31e89a94f.pdf', NULL, 1, 1, '2022-05-10 07:16:05', '2022-05-10 07:41:02');
INSERT INTO `os_patent_instruction` VALUES (6584, 'EP1642661A1', '\\20220510\\af3c5df8e74e4ba79522493ffcc59183.pdf', NULL, 1, 401434, 'af3c5df8e74e4ba79522493ffcc59183.pdf', NULL, 1, 1, '2022-05-10 07:16:05', '2022-05-10 07:41:02');
INSERT INTO `os_patent_instruction` VALUES (7095, 'PH12004000427A1', '\\20220510\\da53bfdcff7d48b7b136d79e3ddd4ed1.pdf', NULL, 1, 1454174, 'da53bfdcff7d48b7b136d79e3ddd4ed1.pdf', NULL, 1, 1, '2022-05-10 07:16:37', '2022-05-10 07:41:34');
INSERT INTO `os_patent_instruction` VALUES (7097, 'PH12006000351A1', '\\20220510\\12b2a3c5dbfc401babefcdff277fd497.pdf', NULL, 1, 2412712, '12b2a3c5dbfc401babefcdff277fd497.pdf', NULL, 1, 1, '2022-05-10 07:16:37', '2022-05-10 07:41:34');
INSERT INTO `os_patent_instruction` VALUES (7098, 'PH12006501295A1', '\\20220510\\b0bcee168c614cadaf4da67a85e20c9a.pdf', NULL, 1, 1765730, 'b0bcee168c614cadaf4da67a85e20c9a.pdf', NULL, 1, 1, '2022-05-10 07:16:37', '2022-05-10 07:41:34');
INSERT INTO `os_patent_instruction` VALUES (7099, 'PH12006502658A1', '\\20220510\\565330031d9e4f01b81b9a8f6e3764b5.pdf', NULL, 1, 2110489, '565330031d9e4f01b81b9a8f6e3764b5.pdf', NULL, 1, 1, '2022-05-10 07:16:37', '2022-05-10 07:41:34');
INSERT INTO `os_patent_instruction` VALUES (7100, 'PH12007500346A1', '\\20220510\\1b6e31078a41454eb603dc400e5d4b91.pdf', NULL, 1, 1029288, '1b6e31078a41454eb603dc400e5d4b91.pdf', NULL, 1, 1, '2022-05-10 07:16:37', '2022-05-10 07:41:34');
INSERT INTO `os_patent_instruction` VALUES (7103, 'PH12008502204A1', '\\20220510\\d594a6b9980a4bada2e9a80b5faacd37.pdf', NULL, 1, 2000311, 'd594a6b9980a4bada2e9a80b5faacd37.pdf', NULL, 1, 1, '2022-05-10 07:16:37', '2022-05-10 07:41:34');
INSERT INTO `os_patent_instruction` VALUES (7265, 'WO2003038157A1', '\\20220510\\cf24d1c7ecbe4cab826ce9c4c7a748b3.pdf', NULL, 1, 2088688, 'cf24d1c7ecbe4cab826ce9c4c7a748b3.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7266, 'WO2003041093A1', '\\20220510\\61e4d9011c9447fa9fccd84930875ba2.pdf', NULL, 1, 1127854, '61e4d9011c9447fa9fccd84930875ba2.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7267, 'WO2003066922A1', '\\20220510\\909d3b7b62af4cbc9f82cf9cd25948e3.pdf', NULL, 1, 1748099, '909d3b7b62af4cbc9f82cf9cd25948e3.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7268, 'WO2003107362A1', '\\20220510\\8342bd4da67d4721839d83288c2e5759.pdf', NULL, 1, 1755626, '8342bd4da67d4721839d83288c2e5759.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7269, 'WO2004051678A1(1)', '\\20220510\\3238d1dcdcd34a4695f56f5a7e397627.pdf', NULL, 1, 2494526, '3238d1dcdcd34a4695f56f5a7e397627.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7270, 'WO2004051678A1', '\\20220510\\6f7007bd0de44b56bdfc3379f84f7f05.pdf', NULL, 1, 2497976, '6f7007bd0de44b56bdfc3379f84f7f05.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7271, 'WO2004064086A1', '\\20220510\\ea0f50d967eb4bcf847baf483ecb19eb.pdf', NULL, 1, 2091983, 'ea0f50d967eb4bcf847baf483ecb19eb.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7272, 'WO2004094090A1', '\\20220510\\e6ae3f409728427ca409e7a667e39dd1.pdf', NULL, 1, 1739534, 'e6ae3f409728427ca409e7a667e39dd1.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7273, 'WO2005015580A1', '\\20220510\\e9692b71a87d435a909785bcbf411d23.pdf', NULL, 1, 3348754, 'e9692b71a87d435a909785bcbf411d23.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7274, 'WO2005072029A1', '\\20220510\\7a03381624ff4df1aeebda5ef7de395b.pdf', NULL, 1, 1473160, '7a03381624ff4df1aeebda5ef7de395b.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7275, 'WO2005105343A1', '\\20220510\\05d5266c791445faaaf562bca4211e1f.pdf', NULL, 1, 1418517, '05d5266c791445faaaf562bca4211e1f.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7276, 'WO2006112403A1', '\\20220510\\e2c9c3c2515f4016964b286d3c979bb8.pdf', NULL, 1, 1847023, 'e2c9c3c2515f4016964b286d3c979bb8.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7277, 'WO2007077809A1', '\\20220510\\d6ec5e113b674373978856ef84f85dde.pdf', NULL, 1, 702446, 'd6ec5e113b674373978856ef84f85dde.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7278, 'WO2007088718A1', '\\20220510\\452d9af78dcd482a8be1f2de1bc96c1b.pdf', NULL, 1, 589746, '452d9af78dcd482a8be1f2de1bc96c1b.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7279, 'WO2007102391A1(1)', '\\20220510\\5a8a755030f24dbaa18af70852a646f8.pdf', NULL, 1, 1375300, '5a8a755030f24dbaa18af70852a646f8.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7280, 'WO2007102391A1', '\\20220510\\cb45d2e934054d1cb91d649447185f29.pdf', NULL, 1, 1379620, 'cb45d2e934054d1cb91d649447185f29.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7281, 'WO2007114336A1', '\\20220510\\ad58d457839b406bb9e4ac5bb964ef16.pdf', NULL, 1, 776237, 'ad58d457839b406bb9e4ac5bb964ef16.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7282, 'WO2008032426A1', '\\20220510\\af4405d48b764d39b4dff2b283643958.pdf', NULL, 1, 1468503, 'af4405d48b764d39b4dff2b283643958.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7283, 'WO2008053921A1', '\\20220510\\e5c498cbcde448f8a786036ec82c5864.pdf', NULL, 1, 1988215, 'e5c498cbcde448f8a786036ec82c5864.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7284, 'WO2008139556A1', '\\20220510\\f9951dc2c16a41518dd3d9be093fc8ff.pdf', NULL, 1, 591372, 'f9951dc2c16a41518dd3d9be093fc8ff.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7285, 'WO2009001801A1', '\\20220510\\2d299933cd9a4e40960b69ee3fc81fbc.pdf', NULL, 1, 1652793, '2d299933cd9a4e40960b69ee3fc81fbc.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7286, 'WO2009004794A1', '\\20220510\\13879cc79cc6441e8ede627d75b926c4.pdf', NULL, 1, 3336755, '13879cc79cc6441e8ede627d75b926c4.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7287, 'WO2009016815A1', '\\20220510\\3be4f7da5688435ebdfb60fbe486be5c.pdf', NULL, 1, 1822144, '3be4f7da5688435ebdfb60fbe486be5c.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7288, 'WO2009025086A1', '\\20220510\\8c34e1e186df46c7aa9160debb7188c3.pdf', NULL, 1, 1900188, '8c34e1e186df46c7aa9160debb7188c3.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7289, 'WO2009031292A1', '\\20220510\\75a241245e94411ebdc45bdf7aaee18d.pdf', NULL, 1, 2203084, '75a241245e94411ebdc45bdf7aaee18d.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7290, 'WO2009041639A1', '\\20220510\\0e22e21ffcdf4eaa8833c52e3ade9240.pdf', NULL, 1, 2368342, '0e22e21ffcdf4eaa8833c52e3ade9240.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7291, 'WO2009122709A1', '\\20220510\\22ede7b2236a4ec09a49ce3c42b11818.pdf', NULL, 1, 1363363, '22ede7b2236a4ec09a49ce3c42b11818.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7292, 'WO2009150843A1', '\\20220510\\fb72319282d14defaaf3c93dcedc897f.pdf', NULL, 1, 740012, 'fb72319282d14defaaf3c93dcedc897f.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7293, 'WO2010001878A2', '\\20220510\\75c318234d0d4dad8e850d1c8c2f02e5.pdf', NULL, 1, 499065, '75c318234d0d4dad8e850d1c8c2f02e5.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7294, 'WO2010082492A1', '\\20220510\\51a1d9c45cb6468286c7d26e9e106ac5.pdf', NULL, 1, 1284187, '51a1d9c45cb6468286c7d26e9e106ac5.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7295, 'WO2010098469A1', '\\20220510\\d10961aecd6648f0a5ea8626570b74c1.pdf', NULL, 1, 509147, 'd10961aecd6648f0a5ea8626570b74c1.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7296, 'WO2011007758A1', '\\20220510\\f714f90de826498f8424c718ab4e2763.pdf', NULL, 1, 1576102, 'f714f90de826498f8424c718ab4e2763.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7297, 'WO2011013489A1', '\\20220510\\9114272bbf40486c93370bf4ab2afac3.pdf', NULL, 1, 684791, '9114272bbf40486c93370bf4ab2afac3.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7298, 'WO2011081170A1', '\\20220510\\de0bb5536b59474ba76678a78527517a.pdf', NULL, 1, 916433, 'de0bb5536b59474ba76678a78527517a.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7299, 'WO2011099471A1', '\\20220510\\87bcf6effea74f3992ed5e9e5f50c240.pdf', NULL, 1, 2353789, '87bcf6effea74f3992ed5e9e5f50c240.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7300, 'WO2011125578A1', '\\20220510\\18763ec989c449939f592443694778ab.pdf', NULL, 1, 2315838, '18763ec989c449939f592443694778ab.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7301, 'WO2012008426A1', '\\20220510\\979d8ddd4cb54468b1df50743713d212.pdf', NULL, 1, 1602238, '979d8ddd4cb54468b1df50743713d212.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:36');
INSERT INTO `os_patent_instruction` VALUES (7302, 'WO2012043717A1', '\\20220510\\99ac4c1ec6ea431abe2e1b1470fb5399.pdf', NULL, 1, 1379676, '99ac4c1ec6ea431abe2e1b1470fb5399.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:37');
INSERT INTO `os_patent_instruction` VALUES (7303, 'WO2012099186A1', '\\20220510\\0a2f2783e6c04c3c8c4d9f3fc4fa4bac.pdf', NULL, 1, 1797357, '0a2f2783e6c04c3c8c4d9f3fc4fa4bac.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:37');
INSERT INTO `os_patent_instruction` VALUES (7304, 'WO2012105399A1', '\\20220510\\a4f4bc1e218f4b1697776de0f7bd1b05.pdf', NULL, 1, 2582980, 'a4f4bc1e218f4b1697776de0f7bd1b05.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:37');
INSERT INTO `os_patent_instruction` VALUES (7305, 'WO2012111353A1', '\\20220510\\7e65ea620f6a4cdbb935f2c830dcb30b.pdf', NULL, 1, 788145, '7e65ea620f6a4cdbb935f2c830dcb30b.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:37');
INSERT INTO `os_patent_instruction` VALUES (7306, 'WO2013018710A1(1)', '\\20220510\\b92a117a419a48a6bd6712f193901e3f.pdf', NULL, 1, 1914653, 'b92a117a419a48a6bd6712f193901e3f.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:37');
INSERT INTO `os_patent_instruction` VALUES (7307, 'WO2013018710A1', '\\20220510\\1dc3fc52ce8e48829294eb814c73e373.pdf', NULL, 1, 1908547, '1dc3fc52ce8e48829294eb814c73e373.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:37');
INSERT INTO `os_patent_instruction` VALUES (7308, 'WO2013047340A1', '\\20220510\\5995d23af9a64b0aa76d84b6ac464944.pdf', NULL, 1, 1389893, '5995d23af9a64b0aa76d84b6ac464944.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:37');
INSERT INTO `os_patent_instruction` VALUES (7309, 'WO2013047429A1', '\\20220510\\c40b6fddbf71402088df3594a495531e.pdf', NULL, 1, 1654286, 'c40b6fddbf71402088df3594a495531e.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:37');
INSERT INTO `os_patent_instruction` VALUES (7310, 'WO2013100008A1', '\\20220510\\4de3dec3850240119c291febba06de1d.pdf', NULL, 1, 1640674, '4de3dec3850240119c291febba06de1d.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:37');
INSERT INTO `os_patent_instruction` VALUES (7311, 'WO2013100009A1', '\\20220510\\4cecad5b3ff4447b9358f143e9923567.pdf', NULL, 1, 2139644, '4cecad5b3ff4447b9358f143e9923567.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:37');
INSERT INTO `os_patent_instruction` VALUES (7312, 'WO2013100010A1', '\\20220510\\c8abdb3f49254a3cb2efd06a6d31cfe0.pdf', NULL, 1, 2160371, 'c8abdb3f49254a3cb2efd06a6d31cfe0.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:37');
INSERT INTO `os_patent_instruction` VALUES (7313, 'WO2013108830A1', '\\20220510\\25b4a2b2450c40ac9fcbbcb0a8940694.pdf', NULL, 1, 1824949, '25b4a2b2450c40ac9fcbbcb0a8940694.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:37');
INSERT INTO `os_patent_instruction` VALUES (7314, 'WO2014002983A1', '\\20220510\\f3caf4cd55954f65957dd5545983602b.pdf', NULL, 1, 1836310, 'f3caf4cd55954f65957dd5545983602b.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:37');
INSERT INTO `os_patent_instruction` VALUES (7315, 'WO2014002986A1', '\\20220510\\871a37d1bc9a494589c3624d0814b4ce.pdf', NULL, 1, 1700640, '871a37d1bc9a494589c3624d0814b4ce.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:37');
INSERT INTO `os_patent_instruction` VALUES (7316, 'WO2014027638A1', '\\20220510\\4771f87d17bc439ea8360f8e3c87ac43.pdf', NULL, 1, 1882623, '4771f87d17bc439ea8360f8e3c87ac43.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:37');
INSERT INTO `os_patent_instruction` VALUES (7317, 'WO2014027641A1', '\\20220510\\ae87e8715d104357af404af2d29edd36.pdf', NULL, 1, 2424131, 'ae87e8715d104357af404af2d29edd36.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:37');
INSERT INTO `os_patent_instruction` VALUES (7318, 'WO2014034650A1', '\\20220510\\b9e5534a36974ba6b2ee4e8a0c3baed6.pdf', NULL, 1, 2087822, 'b9e5534a36974ba6b2ee4e8a0c3baed6.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:37');
INSERT INTO `os_patent_instruction` VALUES (7319, 'WO2014157448A1', '\\20220510\\18c5dafc7e854f60be43767a715baa3b.pdf', NULL, 1, 1139095, '18c5dafc7e854f60be43767a715baa3b.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:37');
INSERT INTO `os_patent_instruction` VALUES (7320, 'WO2014157451A1', '\\20220510\\371b15ffe1a24044858531b163b2d3b0.pdf', NULL, 1, 2461839, '371b15ffe1a24044858531b163b2d3b0.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:37');
INSERT INTO `os_patent_instruction` VALUES (7321, 'WO2015022945A1', '\\20220510\\27eec554fe38449cb63037ced43325ce.pdf', NULL, 1, 2108928, '27eec554fe38449cb63037ced43325ce.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:37');
INSERT INTO `os_patent_instruction` VALUES (7322, 'WO2015022946A1', '\\20220510\\61faf890023e4978873685524558db96.pdf', NULL, 1, 3573335, '61faf890023e4978873685524558db96.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:37');
INSERT INTO `os_patent_instruction` VALUES (7323, 'WO2015030231A1', '\\20220510\\aeec7d1394d34763837966f29333a09d.pdf', NULL, 1, 2360745, 'aeec7d1394d34763837966f29333a09d.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:37');
INSERT INTO `os_patent_instruction` VALUES (7324, 'WO2015163397A1', '\\20220510\\a91ef2a32eea4476b98c923b41a0a119.pdf', NULL, 1, 1764390, 'a91ef2a32eea4476b98c923b41a0a119.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:37');
INSERT INTO `os_patent_instruction` VALUES (7325, 'WO2016047593A1', '\\20220510\\4f334b47bb974569b5f7b64d9d187730.pdf', NULL, 1, 2250101, '4f334b47bb974569b5f7b64d9d187730.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:37');
INSERT INTO `os_patent_instruction` VALUES (7326, 'WO2016136705A1', '\\20220510\\6a6b09fbea474de59a8916f73ce4ec7c.pdf', NULL, 1, 1812353, '6a6b09fbea474de59a8916f73ce4ec7c.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:37');
INSERT INTO `os_patent_instruction` VALUES (7327, 'WO2017018291A1', '\\20220510\\d8df757cef0d4f638cdd8b6e95c214f1.pdf', NULL, 1, 1479689, 'd8df757cef0d4f638cdd8b6e95c214f1.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:37');
INSERT INTO `os_patent_instruction` VALUES (7328, 'WO2018030187A1', '\\20220510\\67801a0ace694e36b7d7fd7ea52d4709.pdf', NULL, 1, 2292990, '67801a0ace694e36b7d7fd7ea52d4709.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:37');
INSERT INTO `os_patent_instruction` VALUES (7329, 'WO2018062174A1', '\\20220510\\870b86bb51dc46c6913f72de0a195dff.pdf', NULL, 1, 1840214, '870b86bb51dc46c6913f72de0a195dff.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:37');
INSERT INTO `os_patent_instruction` VALUES (7330, 'WO2018143230A1', '\\20220510\\d17475d4a51f4fe0b436e66b2e3eeda5.pdf', NULL, 1, 1440531, 'd17475d4a51f4fe0b436e66b2e3eeda5.pdf', NULL, 1, 1, '2022-05-10 07:16:39', '2022-05-10 07:41:37');
INSERT INTO `os_patent_instruction` VALUES (7331, 'US7316752B2', '\\20220531\\3d8bd765be3e4a08a945e7cb06d1ced1.pdf', NULL, 2, 4324118, '3d8bd765be3e4a08a945e7cb06d1ced1.pdf', NULL, 1, 1, '2022-05-31 11:36:22', '2022-05-31 11:36:22');

-- ----------------------------
-- Table structure for os_patent_instruction_text
-- ----------------------------
DROP TABLE IF EXISTS `os_patent_instruction_text`;
CREATE TABLE `os_patent_instruction_text`  (
  `id` int(0) NOT NULL AUTO_INCREMENT COMMENT 'ID',
  `patent_id` int(0) NULL DEFAULT NULL COMMENT '专利ID',
  `manual` longtext CHARACTER SET utf8mb4 COLLATE utf8mb4_0900_ai_ci NULL COMMENT '说明书',
  `manual_out` longtext CHARACTER SET utf8mb4 COLLATE utf8mb4_0900_ai_ci NULL COMMENT '说明书(译)',
  PRIMARY KEY (`id`) USING BTREE,
  INDEX `patent_id`(`patent_id`) USING BTREE
) ENGINE = InnoDB AUTO_INCREMENT = 13796 CHARACTER SET = utf8mb4 COLLATE = utf8mb4_0900_ai_ci COMMENT = '专利说明书（文本）' ROW_FORMAT = Dynamic;

-- ----------------------------
-- Records of os_patent_instruction_text
-- ----------------------------
INSERT INTO `os_patent_instruction_text` VALUES (10571, 23625, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种3D微发光二极管显示装置。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED，μLED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，μLED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但μLED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]微转印(Micro Transfer Printing)技术是目前制备μLED显示装置的主流方法，具体制备过程为：首先在蓝宝石类基板生长出微发光二极管，然后通过激光剥离技术(Laser lift-off，LLO)将微发光二极管裸芯片(bare chip)从蓝宝石类基板上分离开，随后使用一个图案化的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)传送头将微发光二极管裸芯片从蓝宝石类基板吸附起来，并将PDMS传送头与接收基板进行对位，随后将PDMS传送头所吸附的微发光二极管裸芯片贴附到接收基板上预设的位置，再剥离PDMS传送头，即可完成将微发光二极管裸芯片转移到接收基板上，进而制得μLED显示装置。\n\n[0005]一维金属光栅是一种周期性的金属与介质层排布结构，其包括多个平行排列的金属条，各个金属条之间形成有间隔，其具有双折射效应，对于横向磁场(Transverse Magnetic，TM)和横向电场(Transverse Electric，TE)态光场具有很高的消光比，能够显著地透过垂直于金属线排列方向的TM光而反射平行于金属线排列方向的TE光，具有偏光功能，可以作为偏光片使用。不同于一维金属光栅，现有技术中还提出了一种二维金属光栅，其包括：多个阵列排布的矩形块，各个矩阵块在行与行之间、列与列之间都形成有间隔，对于二维金属光栅，其不仅可以具有偏光功能，还可以利用其双折射效应构建1/4波片(Quarter-wave plate)，并且其构建的1/4波片的快轴和慢轴可以随光栅设计的改变而改变。\n\n发明内容\n\n[0006]本发明的目的在于提供一种3D微发光二极管管显示器，能够在实现3D显示，提升3D微发光二极管管显示器的显示品质。\n\n[0007]为实现上述目的，本发明提供了一种3D微发光二极管显示器，包括：基板、设于所述基板上阵列排布的多个微发光二极管、设于所述多个微发光二极管上的偏光层、及设于所述偏光层上的1/4波片层；\n\n[0008]所述偏光层为一维金属光栅结构，所述1/4波片层为二维金属光栅结构；\n\n[0009]所述1/4波片层包括依次排列的多个1/4波片区，相邻的两个1/4波片区的快轴相互垂直；\n\n[0010]所述偏光层的偏振方向与各个1/4波片区的快轴之间的夹角均为45度。\n\n[0011]每一个1/4波片区对应一行微发光二极管。\n\n[0012]每一个1/4波片区对应一列微发光二极管。\n\n[0013]每一个1/4波片区对应一个微发光二极管。\n\n[0014]所述二维金属光栅结构的高度为50至300nm。\n\n[0015]所述二维金属光栅结构在两个维度上的周期均为40至300nm。\n\n[0016]所述多个微发光二极管包括：红色微发光二极管、绿色微发光二极管、及蓝色微发光二极管。\n\n[0017]所述微发光二极管采用微转印的方法制备。\n\n[0018]所述3D微发光二极管显示器为头戴式虚拟现实显示器、或眼镜式虚拟现实显示器。\n\n[0019]本发明的有益效果：本发明提供了一种3D微发光二极管显示器，通过在微发光二极管显示面板上增设层叠设置的一维金属光栅结构和二维金属光栅结构，通过一维金属光栅结构实现对微发光二极管显示面板发出的光线进行偏光，产生线偏振光，通过二微金属光栅结构实现1/4波片的功能，对一维金属光栅产生的线偏振光再进行处理，产生右旋圆偏振光和右旋圆偏振光，以实现3D显示，充分发挥微发光二极管显示面板高分辨率、高亮度、和小型化的优势，实现高品质的3D显示。\n\n附图说明\n\n[0020]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0021]附图中，\n\n[0022]图1为本发明的3D微发光二极管显示器的剖面示意图；\n\n[0023]图2为本发明的3D微发光二极管显示器的第一实施例的俯视示意图；\n\n[0024]图3为本发明的3D微发光二极管显示器的第二实施例的俯视示意图；\n\n[0025]图4为本发明的3D微发光二极管显示器的第三实施例的俯视示意图。\n\n具体实施方式\n\n[0026]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0027]请参阅图1，本发明提供一种3D微发光二极管显示器，包括：基板1、设于所述基板1上阵列排布的多个微发光二极管2、设于所述多个微发光二极管2上的偏光层3、及设于所述偏光层3上的1/4波片层4。\n\n[0028]具体地，所述基板1及基板1上的多个微发光二极管2共同组成了一个2D的微发光二极管显示面板。所述偏光层3为一维金属光栅结构，所述1/4波片层4为二维金属光栅结构。\n\n[0029]进一步地，通过对所述1/4波片层4的二维金属光栅结构的设计，使得所述1/4波片层4分为依次排列的多个1/4波片区41，并且相邻的两个1/4波片区41的快轴相互垂直。\n\n[0030]需要说明的是，所述偏光层3的偏振方向与各个1/4波片区41的快轴之间的夹角均为45度，所述微发光二极管2发出的光线经过偏光层3后产生一个线偏振光，该线偏振光的光矢量与各个1/4波片区41的快轴之间的夹角均为45度，其通过快轴相互垂直的两个1/4波片区41后分别产生右旋圆偏振光、和左旋圆偏振光。\n\n[0031]此时，观看者再佩戴上偏光式3D眼镜后即可观看到三维(ThreeDimensional，3D)立体图像。可以理解的是，也可以在该3D微发光二极管显示器的出射方向上增设左、右偏振方向互相垂直的的偏振片(类似于偏光式3D眼镜)，使得观看者左眼和右眼的观看到不同的图像，实现裸眼3D显示。\n\n[0032]具体地，所述1/4波片层4中的各个1/4波片区41的大小和排列方式可以根据需要进行不同的设计。\n\n[0033]请参阅图2，在本发明的第一实施例中，每一个1/4波片区41对应一行微发光二极管2，也即同一行微发光二极管2对应的1/4波片层4的快轴相同，相邻的两行微发光二极管2对应的1/4波片层4的快轴相互垂直，从而在相邻的两行微发光二极管2之间产生右旋圆偏振光、和左旋圆偏振光，以实现3D显示。\n\n[0034]请参阅图3，在本发明的第二实施例中，每一个1/4波片区41对应一列微发光二极管2，也即同一列微发光二极管2对应的1/4波片层4的快轴相同，相邻的两列微发光二极管2对应的1/4波片层4的快轴相互垂直，从而在在相邻的两列微发光二极管2之间产生右旋圆偏振光、和左旋圆偏振光，以实现3D显示。\n\n[0035]请参阅图4，在本发明的第三实施例中，每一个1/4波片区41对应一个微发光二极管2，也即同一个微发光二极管2对应的1/4波片层4的快轴相同，相邻的两个微发光二极管2对应的1/4波片层4的快轴相互垂直，从而在在相邻的两个微发光二极管2之间产生右旋圆偏振光、和左旋圆偏振光，以实现3D显示。\n\n[0036]可选地，所述二维金属光栅结构的高度为50至300nm，所述二维金属光栅结构在两个维度上的周期均为40至300nm。\n\n[0037]优选地，所述多个微发光二极管2包括：红光微发光二极管R、绿光微发光二极管G、及蓝光微发光二极管B，利用红绿蓝三原色实现色彩显示。\n\n[0038]具体地，所述微发光二极管2采用微转印的方法制备，具体过程为：首先提供一原生基板，在所述原生基板上生成多个微发光二极管2，再通过一微转印传送头将所述多个微发光二极管2转印到基板1上。\n\n[0039]值得一提的是，所述3D微发光二极管显示器可以为头戴式虚拟现实/增强现实显示器、或眼镜式虚拟现实/增强现实显示器。\n\n[0040]综上所述，本发明提供了一种3D微发光二极管显示器，通过在微发光二极管显示面板上增设层叠设置的一维金属光栅结构和二维金属光栅结构，通过一维金属光栅结构实现对微发光二极管显示面板发出的光线进行偏光，产生线偏振光，通过二微金属光栅结构实现1/4波片的功能，对一维金属光栅产生的线偏振光再进行处理，产生右旋圆偏振光和右旋圆偏振光，以实现3D显示，充分发挥微发光二极管显示面板高分辨率、高亮度、和小型化的优势，实现高品质的3D显示。\n\n[0041]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种3D微发光二极管显示装置。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED，μLED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，μLED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但μLED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]微转印(Micro Transfer Printing)技术是目前制备μLED显示装置的主流方法，具体制备过程为：首先在蓝宝石类基板生长出微发光二极管，然后通过激光剥离技术(Laser lift-off，LLO)将微发光二极管裸芯片(bare chip)从蓝宝石类基板上分离开，随后使用一个图案化的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)传送头将微发光二极管裸芯片从蓝宝石类基板吸附起来，并将PDMS传送头与接收基板进行对位，随后将PDMS传送头所吸附的微发光二极管裸芯片贴附到接收基板上预设的位置，再剥离PDMS传送头，即可完成将微发光二极管裸芯片转移到接收基板上，进而制得μLED显示装置。\n\n[0005]一维金属光栅是一种周期性的金属与介质层排布结构，其包括多个平行排列的金属条，各个金属条之间形成有间隔，其具有双折射效应，对于横向磁场(Transverse Magnetic，TM)和横向电场(Transverse Electric，TE)态光场具有很高的消光比，能够显著地透过垂直于金属线排列方向的TM光而反射平行于金属线排列方向的TE光，具有偏光功能，可以作为偏光片使用。不同于一维金属光栅，现有技术中还提出了一种二维金属光栅，其包括：多个阵列排布的矩形块，各个矩阵块在行与行之间、列与列之间都形成有间隔，对于二维金属光栅，其不仅可以具有偏光功能，还可以利用其双折射效应构建1/4波片(Quarter-wave plate)，并且其构建的1/4波片的快轴和慢轴可以随光栅设计的改变而改变。\n\n发明内容\n\n[0006]本发明的目的在于提供一种3D微发光二极管管显示器，能够在实现3D显示，提升3D微发光二极管管显示器的显示品质。\n\n[0007]为实现上述目的，本发明提供了一种3D微发光二极管显示器，包括：基板、设于所述基板上阵列排布的多个微发光二极管、设于所述多个微发光二极管上的偏光层、及设于所述偏光层上的1/4波片层；\n\n[0008]所述偏光层为一维金属光栅结构，所述1/4波片层为二维金属光栅结构；\n\n[0009]所述1/4波片层包括依次排列的多个1/4波片区，相邻的两个1/4波片区的快轴相互垂直；\n\n[0010]所述偏光层的偏振方向与各个1/4波片区的快轴之间的夹角均为45度。\n\n[0011]每一个1/4波片区对应一行微发光二极管。\n\n[0012]每一个1/4波片区对应一列微发光二极管。\n\n[0013]每一个1/4波片区对应一个微发光二极管。\n\n[0014]所述二维金属光栅结构的高度为50至300nm。\n\n[0015]所述二维金属光栅结构在两个维度上的周期均为40至300nm。\n\n[0016]所述多个微发光二极管包括：红色微发光二极管、绿色微发光二极管、及蓝色微发光二极管。\n\n[0017]所述微发光二极管采用微转印的方法制备。\n\n[0018]所述3D微发光二极管显示器为头戴式虚拟现实显示器、或眼镜式虚拟现实显示器。\n\n[0019]本发明的有益效果：本发明提供了一种3D微发光二极管显示器，通过在微发光二极管显示面板上增设层叠设置的一维金属光栅结构和二维金属光栅结构，通过一维金属光栅结构实现对微发光二极管显示面板发出的光线进行偏光，产生线偏振光，通过二微金属光栅结构实现1/4波片的功能，对一维金属光栅产生的线偏振光再进行处理，产生右旋圆偏振光和右旋圆偏振光，以实现3D显示，充分发挥微发光二极管显示面板高分辨率、高亮度、和小型化的优势，实现高品质的3D显示。\n\n附图说明\n\n[0020]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0021]附图中，\n\n[0022]图1为本发明的3D微发光二极管显示器的剖面示意图；\n\n[0023]图2为本发明的3D微发光二极管显示器的第一实施例的俯视示意图；\n\n[0024]图3为本发明的3D微发光二极管显示器的第二实施例的俯视示意图；\n\n[0025]图4为本发明的3D微发光二极管显示器的第三实施例的俯视示意图。\n\n具体实施方式\n\n[0026]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0027]请参阅图1，本发明提供一种3D微发光二极管显示器，包括：基板1、设于所述基板1上阵列排布的多个微发光二极管2、设于所述多个微发光二极管2上的偏光层3、及设于所述偏光层3上的1/4波片层4。\n\n[0028]具体地，所述基板1及基板1上的多个微发光二极管2共同组成了一个2D的微发光二极管显示面板。所述偏光层3为一维金属光栅结构，所述1/4波片层4为二维金属光栅结构。\n\n[0029]进一步地，通过对所述1/4波片层4的二维金属光栅结构的设计，使得所述1/4波片层4分为依次排列的多个1/4波片区41，并且相邻的两个1/4波片区41的快轴相互垂直。\n\n[0030]需要说明的是，所述偏光层3的偏振方向与各个1/4波片区41的快轴之间的夹角均为45度，所述微发光二极管2发出的光线经过偏光层3后产生一个线偏振光，该线偏振光的光矢量与各个1/4波片区41的快轴之间的夹角均为45度，其通过快轴相互垂直的两个1/4波片区41后分别产生右旋圆偏振光、和左旋圆偏振光。\n\n[0031]此时，观看者再佩戴上偏光式3D眼镜后即可观看到三维(ThreeDimensional，3D)立体图像。可以理解的是，也可以在该3D微发光二极管显示器的出射方向上增设左、右偏振方向互相垂直的的偏振片(类似于偏光式3D眼镜)，使得观看者左眼和右眼的观看到不同的图像，实现裸眼3D显示。\n\n[0032]具体地，所述1/4波片层4中的各个1/4波片区41的大小和排列方式可以根据需要进行不同的设计。\n\n[0033]请参阅图2，在本发明的第一实施例中，每一个1/4波片区41对应一行微发光二极管2，也即同一行微发光二极管2对应的1/4波片层4的快轴相同，相邻的两行微发光二极管2对应的1/4波片层4的快轴相互垂直，从而在相邻的两行微发光二极管2之间产生右旋圆偏振光、和左旋圆偏振光，以实现3D显示。\n\n[0034]请参阅图3，在本发明的第二实施例中，每一个1/4波片区41对应一列微发光二极管2，也即同一列微发光二极管2对应的1/4波片层4的快轴相同，相邻的两列微发光二极管2对应的1/4波片层4的快轴相互垂直，从而在在相邻的两列微发光二极管2之间产生右旋圆偏振光、和左旋圆偏振光，以实现3D显示。\n\n[0035]请参阅图4，在本发明的第三实施例中，每一个1/4波片区41对应一个微发光二极管2，也即同一个微发光二极管2对应的1/4波片层4的快轴相同，相邻的两个微发光二极管2对应的1/4波片层4的快轴相互垂直，从而在在相邻的两个微发光二极管2之间产生右旋圆偏振光、和左旋圆偏振光，以实现3D显示。\n\n[0036]可选地，所述二维金属光栅结构的高度为50至300nm，所述二维金属光栅结构在两个维度上的周期均为40至300nm。\n\n[0037]优选地，所述多个微发光二极管2包括：红光微发光二极管R、绿光微发光二极管G、及蓝光微发光二极管B，利用红绿蓝三原色实现色彩显示。\n\n[0038]具体地，所述微发光二极管2采用微转印的方法制备，具体过程为：首先提供一原生基板，在所述原生基板上生成多个微发光二极管2，再通过一微转印传送头将所述多个微发光二极管2转印到基板1上。\n\n[0039]值得一提的是，所述3D微发光二极管显示器可以为头戴式虚拟现实/增强现实显示器、或眼镜式虚拟现实/增强现实显示器。\n\n[0040]综上所述，本发明提供了一种3D微发光二极管显示器，通过在微发光二极管显示面板上增设层叠设置的一维金属光栅结构和二维金属光栅结构，通过一维金属光栅结构实现对微发光二极管显示面板发出的光线进行偏光，产生线偏振光，通过二微金属光栅结构实现1/4波片的功能，对一维金属光栅产生的线偏振光再进行处理，产生右旋圆偏振光和右旋圆偏振光，以实现3D显示，充分发挥微发光二极管显示面板高分辨率、高亮度、和小型化的优势，实现高品质的3D显示。\n\n[0041]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10572, 23626, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种3D显示装置。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED，μLED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，μLED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但μLED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]微转印(Micro Transfer Printing)技术是目前制备μLED显示装置的主流方法，具体制备过程为：首先在蓝宝石类基板生长出微发光二极管，然后通过激光剥离技术(Laser lift-off，LLO)将微发光二极管裸芯片(bare chip)从蓝宝石类基板上分离开，随后使用一个图案化的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)传送头将微发光二极管裸芯片从蓝宝石类基板吸附起来，并将PDMS传送头与接收基板进行对位，随后将PDMS传送头所吸附的微发光二极管裸芯片贴附到接收基板上预设的位置，再剥离PDMS传送头，即可完成将微发光二极管裸芯片转移到接收基板上，进而制得μLED显示装置。需要补充说明的是，在微转印完成之后，接收基板上的微发光二极管裸芯片是裸露在外的，为了隔绝水汽保护微发光二极管裸芯片不被破坏，通常还需要对微发光二极管裸芯片进行封装，一般是在微发光二极管裸芯片上旋涂一层有机聚合物封装材料来实现微发光二极管裸芯片的封装，以完成对微发光二极管裸芯片进行封装保护。\n\n[0005]基于微透镜阵列的三维(Three Dimensional，3D)显示装置是一种无需任何助视设备的3D显示装置，通常包括：2D显示面板、以及设于所述2D显示面板出光面一侧的微透镜阵列；其中，2D显示面板用于提供来自同一立体场景的多幅视差图像，微透镜阵列利用光折射作用，将这些视差图像在空间方向上进行分开，形成不同的视点。当观看者双眼分别处于不同的视点时，就能够观看到对应的视差图像，从而实现立体感观。\n\n发明内容\n\n[0006]本发明的目的在于提供一种3D显示装置，简化微发光二极管3D显示装置的结构，实现裸眼3D显示，同时降低生产成本。\n\n[0007]为实现上述目的，本发明提供了一种3D显示装置，包括：基板、设于所述基板上的阵列排布的多个微发光二极管、设于所述多个微发光二极管上的介质层、及设于所述介质层上的微透镜封装阵列层；\n\n[0008]所述介质层为透明介质；\n\n[0009]所述微透镜封装阵列层对所述微发光二极管进行封装保护，并将位于基板的各个不同位置上的微发光二极管发出的光线折射到不同的空间方向上，形成分别对应观看者左眼和右眼的两个视点，从而实现3D显示。\n\n[0010]所述微透镜封装阵列层采用半导体材料、重铬酸铵明胶、或树脂类材料制备。\n\n[0011]所述微透镜封装阵列层采用光刻胶热熔法制备。\n\n[0012]所述微透镜封装阵列层包括：阵列排布的多个微透镜单元，所述微透镜单元的形状为半球形。\n\n[0013]所述多个微发光二极管包括：红色微发光二极管、绿色微发光二极管、及蓝色微发光二极管。\n\n[0014]所述多个微发光二极管采用微转印的方法制得。\n\n[0015]所述基板与所述多个微发光二极管之间设有与所述多个微发光二极管电性连接的控制电路。\n\n[0016]所述多个微发光二极管均为GaN微发光二极管、InGaN微发光二极管、或AlGaInP微发光二极管。\n\n[0017]本发明的有益效果：本发明提供了一种3D显示装置，该3D显示装置采用微发光二极管显示装置来显示图像，并在微发光二极管显示装置的出光面一侧设置微透镜封装阵列层，该微透镜封装阵列层同时具备对微发光二极管进行封装保护和区分左右眼图像实现3D显示的作用，利用该多功能的微透镜封装阵列层能够在简化微发光二极管3D显示装置结构的同时实现裸眼3D显示，降低生产成本，提升显示品质。\n\n附图说明\n\n[0018]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0019]附图中，\n\n[0020]图1为本发明的3D显示装置的结构示意图。\n\n具体实施方式\n\n[0021]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0022]请参阅图1，本发明提供了一种3D显示装置，包括：基板1、设于所述基板1上的阵列排布的多个微发光二极管2、设于所述多个微发光二极管2上的介质层3、及设于所述介质层3上的微透镜封装阵列层4。\n\n[0023]具体地，所述介质层3为透明介质，其具有一定的厚度，使得微透镜封装阵列层4能够对微发光二极管2发出的光线进行分光，实现3D显示。\n\n[0024]需要说明的是，所述微透镜封装阵列层4同时具有两个作用，第一个作用为对所述微发光二极管2进行封装保护，防止水汽破坏微发光二极管2的内部结构，延长微发光二极管2的寿命，第二个作用为实现3D显示，通过微透镜封装阵列层4将位于基板1的各个不同位置上的微发光二极管2发出的光线折射到不同的空间方向上，形成分别对应观看者左眼和右眼的两个视点，从而实现3D显示。进一步地，观看者的左眼和右眼分别接收由位于基板1的各个不同位置上的微发光二极管2显示的同一个立体场景的不同视差图像，经视觉中枢的立体融合获得立体感。\n\n[0025]具体地，所述微透镜封装阵列层4可选择磷化铟(InP)等半导体材料、或重铬酸铵明胶、或树脂类材料制备。所述微透镜封装阵列层4包括：阵列排布的多个微透镜单元41，优选地，所述微透镜单元41的形状为半球形。\n\n[0026]具体地，所述微透镜封装阵列层4可采用光刻胶热熔法制备，具体操作过程为：首先在一衬底上涂布一定厚度的光刻胶，随后对所述光刻胶进行曝光和显影形成具有圆柱阵列图案的光刻胶层，再将所述光刻胶层加热至熔融状态，其表面张力将圆柱形结构转变成光滑的半球形结构，最后再通过反应离子刻蚀将光刻胶微透镜图案转移至其它载体上，制得微透镜阵列。\n\n[0027]值得一提的是，所述多个微发光二极管2可通过微转印的方法制得，具体操作过程如下：首先提供一原生基板，在所述原生基板上生成多个微发光二极管2，再通过一微转印传送头将所述多个微发光二极管2转印到基板1上；所述原生基板为蓝宝石类基板。优选地，所述多个微发光二极管2均为氮化镓(GaN)微发光二极管、氮化铟镓(InGaN)微发光二极管、或磷化铝镓铟(AlGaInP)微发光二极管，所述基板1为玻璃基板。\n\n[0028]具体地，所述多个微发光二极管2包括：红色微发光二极管、绿色微发光二极管、及蓝色微发光二极管，一红色微发光二极管、一绿色微发光二极管、及一蓝色微发光二极管构成一个显示像素。\n\n[0029]值得一提的是，所述基板1与所述多个微发光二极管2之间设有与所述多个微发光二极管2电性连接的控制电路，所述控制电路包括对应所述多个微发光二极管2设置的多个薄膜晶体管，通过所述控制电路驱动所述多个微发光二极管2发光，以显示图像。\n\n[0030]综上所述，本发明提供了一种3D显示装置，该3D显示装置采用微发光二极管显示装置来显示图像，并在微发光二极管显示装置的出光面一侧设置微透镜封装阵列层，该微透镜封装阵列层同时具备对微发光二极管进行封装保护和区分左右眼图像实现3D显示的作用，利用该多功能的微透镜封装阵列层能够在简化微发光二极管3D显示装置结构的同时实现裸眼3D显示，降低生产成本，提升显示品质。\n\n[0031]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种3D显示装置。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED，μLED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，μLED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但μLED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]微转印(Micro Transfer Printing)技术是目前制备μLED显示装置的主流方法，具体制备过程为：首先在蓝宝石类基板生长出微发光二极管，然后通过激光剥离技术(Laser lift-off，LLO)将微发光二极管裸芯片(bare chip)从蓝宝石类基板上分离开，随后使用一个图案化的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)传送头将微发光二极管裸芯片从蓝宝石类基板吸附起来，并将PDMS传送头与接收基板进行对位，随后将PDMS传送头所吸附的微发光二极管裸芯片贴附到接收基板上预设的位置，再剥离PDMS传送头，即可完成将微发光二极管裸芯片转移到接收基板上，进而制得μLED显示装置。需要补充说明的是，在微转印完成之后，接收基板上的微发光二极管裸芯片是裸露在外的，为了隔绝水汽保护微发光二极管裸芯片不被破坏，通常还需要对微发光二极管裸芯片进行封装，一般是在微发光二极管裸芯片上旋涂一层有机聚合物封装材料来实现微发光二极管裸芯片的封装，以完成对微发光二极管裸芯片进行封装保护。\n\n[0005]基于微透镜阵列的三维(Three Dimensional，3D)显示装置是一种无需任何助视设备的3D显示装置，通常包括：2D显示面板、以及设于所述2D显示面板出光面一侧的微透镜阵列；其中，2D显示面板用于提供来自同一立体场景的多幅视差图像，微透镜阵列利用光折射作用，将这些视差图像在空间方向上进行分开，形成不同的视点。当观看者双眼分别处于不同的视点时，就能够观看到对应的视差图像，从而实现立体感观。\n\n发明内容\n\n[0006]本发明的目的在于提供一种3D显示装置，简化微发光二极管3D显示装置的结构，实现裸眼3D显示，同时降低生产成本。\n\n[0007]为实现上述目的，本发明提供了一种3D显示装置，包括：基板、设于所述基板上的阵列排布的多个微发光二极管、设于所述多个微发光二极管上的介质层、及设于所述介质层上的微透镜封装阵列层；\n\n[0008]所述介质层为透明介质；\n\n[0009]所述微透镜封装阵列层对所述微发光二极管进行封装保护，并将位于基板的各个不同位置上的微发光二极管发出的光线折射到不同的空间方向上，形成分别对应观看者左眼和右眼的两个视点，从而实现3D显示。\n\n[0010]所述微透镜封装阵列层采用半导体材料、重铬酸铵明胶、或树脂类材料制备。\n\n[0011]所述微透镜封装阵列层采用光刻胶热熔法制备。\n\n[0012]所述微透镜封装阵列层包括：阵列排布的多个微透镜单元，所述微透镜单元的形状为半球形。\n\n[0013]所述多个微发光二极管包括：红色微发光二极管、绿色微发光二极管、及蓝色微发光二极管。\n\n[0014]所述多个微发光二极管采用微转印的方法制得。\n\n[0015]所述基板与所述多个微发光二极管之间设有与所述多个微发光二极管电性连接的控制电路。\n\n[0016]所述多个微发光二极管均为GaN微发光二极管、InGaN微发光二极管、或AlGaInP微发光二极管。\n\n[0017]本发明的有益效果：本发明提供了一种3D显示装置，该3D显示装置采用微发光二极管显示装置来显示图像，并在微发光二极管显示装置的出光面一侧设置微透镜封装阵列层，该微透镜封装阵列层同时具备对微发光二极管进行封装保护和区分左右眼图像实现3D显示的作用，利用该多功能的微透镜封装阵列层能够在简化微发光二极管3D显示装置结构的同时实现裸眼3D显示，降低生产成本，提升显示品质。\n\n附图说明\n\n[0018]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0019]附图中，\n\n[0020]图1为本发明的3D显示装置的结构示意图。\n\n具体实施方式\n\n[0021]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0022]请参阅图1，本发明提供了一种3D显示装置，包括：基板1、设于所述基板1上的阵列排布的多个微发光二极管2、设于所述多个微发光二极管2上的介质层3、及设于所述介质层3上的微透镜封装阵列层4。\n\n[0023]具体地，所述介质层3为透明介质，其具有一定的厚度，使得微透镜封装阵列层4能够对微发光二极管2发出的光线进行分光，实现3D显示。\n\n[0024]需要说明的是，所述微透镜封装阵列层4同时具有两个作用，第一个作用为对所述微发光二极管2进行封装保护，防止水汽破坏微发光二极管2的内部结构，延长微发光二极管2的寿命，第二个作用为实现3D显示，通过微透镜封装阵列层4将位于基板1的各个不同位置上的微发光二极管2发出的光线折射到不同的空间方向上，形成分别对应观看者左眼和右眼的两个视点，从而实现3D显示。进一步地，观看者的左眼和右眼分别接收由位于基板1的各个不同位置上的微发光二极管2显示的同一个立体场景的不同视差图像，经视觉中枢的立体融合获得立体感。\n\n[0025]具体地，所述微透镜封装阵列层4可选择磷化铟(InP)等半导体材料、或重铬酸铵明胶、或树脂类材料制备。所述微透镜封装阵列层4包括：阵列排布的多个微透镜单元41，优选地，所述微透镜单元41的形状为半球形。\n\n[0026]具体地，所述微透镜封装阵列层4可采用光刻胶热熔法制备，具体操作过程为：首先在一衬底上涂布一定厚度的光刻胶，随后对所述光刻胶进行曝光和显影形成具有圆柱阵列图案的光刻胶层，再将所述光刻胶层加热至熔融状态，其表面张力将圆柱形结构转变成光滑的半球形结构，最后再通过反应离子刻蚀将光刻胶微透镜图案转移至其它载体上，制得微透镜阵列。\n\n[0027]值得一提的是，所述多个微发光二极管2可通过微转印的方法制得，具体操作过程如下：首先提供一原生基板，在所述原生基板上生成多个微发光二极管2，再通过一微转印传送头将所述多个微发光二极管2转印到基板1上；所述原生基板为蓝宝石类基板。优选地，所述多个微发光二极管2均为氮化镓(GaN)微发光二极管、氮化铟镓(InGaN)微发光二极管、或磷化铝镓铟(AlGaInP)微发光二极管，所述基板1为玻璃基板。\n\n[0028]具体地，所述多个微发光二极管2包括：红色微发光二极管、绿色微发光二极管、及蓝色微发光二极管，一红色微发光二极管、一绿色微发光二极管、及一蓝色微发光二极管构成一个显示像素。\n\n[0029]值得一提的是，所述基板1与所述多个微发光二极管2之间设有与所述多个微发光二极管2电性连接的控制电路，所述控制电路包括对应所述多个微发光二极管2设置的多个薄膜晶体管，通过所述控制电路驱动所述多个微发光二极管2发光，以显示图像。\n\n[0030]综上所述，本发明提供了一种3D显示装置，该3D显示装置采用微发光二极管显示装置来显示图像，并在微发光二极管显示装置的出光面一侧设置微透镜封装阵列层，该微透镜封装阵列层同时具备对微发光二极管进行封装保护和区分左右眼图像实现3D显示的作用，利用该多功能的微透镜封装阵列层能够在简化微发光二极管3D显示装置结构的同时实现裸眼3D显示，降低生产成本，提升显示品质。\n\n[0031]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10573, 23627, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管显示面板。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED，μLED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，μLED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但μLED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]微转印(Micro Transfer Printing)技术是目前制备μLED显示装置的主流方法，具体制备过程为：首先在蓝宝石类基板生长出微发光二极管，然后通过激光剥离技术(Laser lift-off，LLO)将微发光二极管裸芯片(bare chip)从蓝宝石类基板上分离开，随后使用一个图案化的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)传送头将微发光二极管裸芯片从蓝宝石类基板吸附起来，并将PDMS传送头与接收基板进行对位，随后将PDMS传送头所吸附的微发光二极管裸芯片贴附到接收基板上预设的位置，再剥离PDMS传送头，即可完成将微发光二极管裸芯片转移到接收基板上，进而制得μLED显示装置。\n\n[0005]微发光二极管的尺寸越小，价格越便宜，同时发光源也越小。然而，请参阅图1，目前平面显示装置中的子像素100的尺寸相对于微发光二极管的尺寸而言都是比较大的，若采用尺寸与子像素100的尺寸相当的微发光二极管作为各个子像素的发光源，则成本极高，而若选择尺寸小于子像素100的尺寸的微发光二极管作为各个子像素100的发光源，又会造成子像素100中发光的区域200的面积太小，进而引起显示品质下降。\n\n发明内容\n\n[0006]本发明的目的在于提供一种微发光二极管显示面板，能够在不增加微发光二极管尺寸的前提，扩大子像素区域中发光的区域的面积，提升显示品质，降低生产成本。\n\n[0007]为实现上述目的，本发明提供了一种微发光二极管显示面板，包括：透明的基板、设于所述基板上表面上的阵列排布的多个子像素区域、设于所述基板上的各个子像素区域内的微发光二极管、覆盖所述多个微发光二极管的透明的封装层、以及设于所述基板下表面上的反射透镜层；\n\n[0008]每一个子像素区域内设有一个微发光二极管，且所述微发光二极管的尺寸小于所述子像素区域的尺寸；\n\n[0009]所述反射透镜层将所述微发光二极管发出的光线反射至所述微发光二极管外围的子像素区域中，扩大所述子像素区域中发光的区域的面积。\n\n[0010]所述反射透镜层包括：多个反射透镜单元，所述反射透镜单元与所述微发光二极管一一对应。\n\n[0011]所述反射透镜单元的形状为向远离基板一侧凸起的曲面。\n\n[0012]所述封装层中还设有散射粒子，通过所述散射粒子对所述微发光二极管的经由封装层射出的光线进行散射。\n\n[0013]所述封装层上还设有散射透镜层，通过所述散射透镜层对所述微发光二极管的经由封装层和散射透镜层射出的光线进行散射。\n\n[0014]所述散射透镜层包括：多个散射透镜单元，所述散射透镜单元与所述微发光二极管一一对应。\n\n[0015]所述散射透镜单元的形状为向远离基板的一侧凸起的曲面。\n\n[0016]所述散射透镜单元的形状为锯齿形。\n\n[0017]所述多个微发光二极管包括：红色微发光二极管、绿色微发光二极管、及蓝色微发光二极管。\n\n[0018]所述封装层的材料为：聚对二甲苯、或有机树脂。\n\n[0019]本发明的有益效果：本发明提供一种微发光二极管显示面板，该微发光二极管显示面板的子像素区域内设有尺寸小于子像素区域的尺寸的微发光二极管，并在该微发光二极管的下方设有反射透镜层，通过反射透镜层将微发光二极管照射到反射透镜层上的光线反射到微发光二极管的原有发光区域的外围，进而扩大所述子像素区域中发光的区域的面积，提升显示品质，降低生产成本。\n\n附图说明\n\n[0020]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0021]附图中，\n\n[0022]图1为现有的微发光二极管显示面板的子像素中发光的区域的示意图；\n\n[0023]图2为本发明的微发光二极管显示面板的第一实施例的示意图；\n\n[0024]图3为本发明的微发光二极管显示面板的第二实施例的示意图；\n\n[0025]图4为本发明的微发光二极管显示面板的第三实施例的示意图；\n\n[0026]图5为本发明的微发光二极管显示面板的第四实施例的示意图；\n\n[0027]图6为本发明的微发光二极管显示面板的子像素区域中发光的区域的示意图。\n\n具体实施方式\n\n[0028]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0029]请参阅图2，本发明提供一种微发光二极管显示面板，如图2所示，在本发明的第一实施例中，所述微发光二极管显示面板包括：透明的基板1、设于所述基板1上表面上的阵列排布的多个子像素区域2、设于所述基板1上的各个子像素区域2内的微发光二极管3、覆盖所述多个微发光二极管3的透明的封装层4、以及设于所述基板1下表面上的反射透镜层5；\n\n[0030]每一个子像素区域2内设有一个微发光二极管3，且所述微发光二极管3的尺寸小于所述子像素区域2的尺寸；\n\n[0031]所述反射透镜层5将所述微发光二极管3发出的光线反射至所述微发光二极管3外围的子像素区域2中，扩大所述子像素区域2中发光的区域的面积。\n\n[0032]具体地，所述基板1优选玻璃基板，所述基板1上形成有驱动电路，所述驱动电路与所述微发光二极管3电性连接，通过所述驱动电路控制所述微发光二极管3发光。所述封装层4的材料可选择各类型的聚对二甲苯、或有机树脂。所述多个微发光二极管3可以包括：红色微发光二极管、绿色微发光二极管、及蓝色微发光二极管等各种颜色的微发光二极管。\n\n[0033]需要说明的是，所述反射透镜层5包括：多个反射透镜单元51，所述反射透镜单元51与所述微发光二极管3一一对应，也即每一个微发光二极管3的下方均设有一个反射透镜单元51，通过该反射透镜单元51反射微发光二极管3透过基板1照射到反射透镜单元51上的光线，所述反射透镜单元51将该光线反射至该微发光二极管3外围的子像素区域2中，进而使得子像素区域2除了设有微发光二极管3的区域发光以外，被反射透镜单元51反射的光线照射的区域也发光，进而扩大子像素区域2的发光的区域的面积。优选地，所述反射透镜单元51的形状为向远离基板1一侧凸起的曲面。\n\n[0034]值得一提的是，经过反射透镜层5的反射后子像素区域中发光的区域的光强大于微发光二极管3总发射光强的一半，设所述微发光二极管3的原有的发光区域的面积为a平方微米，而经过反射透镜层5的反射后子像素区域中需要达到的发光的区域的面积为b平方微米(b大于a)，此时微发光二极管3的原有的发光区域经过所述反射透镜层5的反射后扩大到的面积大小为b平方微米的发光的区域时，所述面积大小为b平方微米的发光的区域距离所述微发光二极管3的距离为L，L大于或等于b/a×10-5米且小于或等于b/a×10-2米，也即所述微发光二极管3的原有的发光区域经过所述反射透镜层5的反射后扩大到的需要的发光的区域的面积时，其与所述微发光二极管3之间的距离需要限定在合理的范围内。\n\n[0035]进一步地，请参阅图6，图6为本发明的微发光二极管显示面板中子像素区域中发光的区域的示意图，对比图1和图6，可见，经过反射透镜层5的反射作用后，在微发光二极管3的尺寸不变的前提下，子像素区域2中发光的区域的面积相比于原有的发光的区域面积显著增大，从而提升了微发光二极管显示面板的显示效果。\n\n[0036]具体地，为了进一步提升子像素区域2中发光的区域的扩大效果，在本发明的第二至第四实施例中，还在第一实施例的基础上增设了位于所述微发光二极管3的上方的散射单元，通过所述散射单元将所述微发光二极管3经由封装层4射出的光线向所述微发光二极管3的外围进行散射，以扩大所述子像素区域2中发光的区域的面积。\n\n[0037]请参阅图3，在本发明的第二实施例中，所述散射单元为设置在所述封装层4中的散射粒子41，通过所述散射粒子41对所述微发光二极管3的经由封装层4射出的光线进行散射，以扩大所述子像素区域2中发光的区域的面积。\n\n[0038]请参阅图4和图5，在本发明的第三和第四实施例中，所述散射单元为设置在所述封装层4上的散射透镜层6，通过所述散射透镜层6对所述微发光二极管3的经由封装层4和散射透镜层6射出的光线进行散射。所述散射透镜层6包括：多个散射透镜单元61，所述散射透镜单元61与所述微发光二极管3一一对应，也即每一个微发光二极管3的上方的封装层4上均设有一个散射透镜单元61。所述散射透镜单元61的形状可以根据需要进行相应的设计，例如，在本发明的第三实施例中，所述散射透镜单元61的形状为向远离基板1的一侧凸起的曲面。而在本发明的第四实施例中，所述散射透镜单元61的形状为锯齿形。\n\n[0039]综上所述，本发明提供一种微发光二极管显示面板，该微发光二极管显示面板的子像素区域内设有尺寸小于子像素区域的尺寸的微发光二极管，并在该微发光二极管的下方设有反射透镜层，通过反射透镜层将微发光二极管照射到反射透镜层上的光线反射到微发光二极管的原有发光区域的外围，进而扩大所述子像素区域中发光的区域的面积，提升显示品质，降低生产成本。\n\n[0040]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管显示面板。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED，μLED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，μLED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但μLED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]微转印(Micro Transfer Printing)技术是目前制备μLED显示装置的主流方法，具体制备过程为：首先在蓝宝石类基板生长出微发光二极管，然后通过激光剥离技术(Laser lift-off，LLO)将微发光二极管裸芯片(bare chip)从蓝宝石类基板上分离开，随后使用一个图案化的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)传送头将微发光二极管裸芯片从蓝宝石类基板吸附起来，并将PDMS传送头与接收基板进行对位，随后将PDMS传送头所吸附的微发光二极管裸芯片贴附到接收基板上预设的位置，再剥离PDMS传送头，即可完成将微发光二极管裸芯片转移到接收基板上，进而制得μLED显示装置。\n\n[0005]微发光二极管的尺寸越小，价格越便宜，同时发光源也越小。然而，请参阅图1，目前平面显示装置中的子像素100的尺寸相对于微发光二极管的尺寸而言都是比较大的，若采用尺寸与子像素100的尺寸相当的微发光二极管作为各个子像素的发光源，则成本极高，而若选择尺寸小于子像素100的尺寸的微发光二极管作为各个子像素100的发光源，又会造成子像素100中发光的区域200的面积太小，进而引起显示品质下降。\n\n发明内容\n\n[0006]本发明的目的在于提供一种微发光二极管显示面板，能够在不增加微发光二极管尺寸的前提，扩大子像素区域中发光的区域的面积，提升显示品质，降低生产成本。\n\n[0007]为实现上述目的，本发明提供了一种微发光二极管显示面板，包括：透明的基板、设于所述基板上表面上的阵列排布的多个子像素区域、设于所述基板上的各个子像素区域内的微发光二极管、覆盖所述多个微发光二极管的透明的封装层、以及设于所述基板下表面上的反射透镜层；\n\n[0008]每一个子像素区域内设有一个微发光二极管，且所述微发光二极管的尺寸小于所述子像素区域的尺寸；\n\n[0009]所述反射透镜层将所述微发光二极管发出的光线反射至所述微发光二极管外围的子像素区域中，扩大所述子像素区域中发光的区域的面积。\n\n[0010]所述反射透镜层包括：多个反射透镜单元，所述反射透镜单元与所述微发光二极管一一对应。\n\n[0011]所述反射透镜单元的形状为向远离基板一侧凸起的曲面。\n\n[0012]所述封装层中还设有散射粒子，通过所述散射粒子对所述微发光二极管的经由封装层射出的光线进行散射。\n\n[0013]所述封装层上还设有散射透镜层，通过所述散射透镜层对所述微发光二极管的经由封装层和散射透镜层射出的光线进行散射。\n\n[0014]所述散射透镜层包括：多个散射透镜单元，所述散射透镜单元与所述微发光二极管一一对应。\n\n[0015]所述散射透镜单元的形状为向远离基板的一侧凸起的曲面。\n\n[0016]所述散射透镜单元的形状为锯齿形。\n\n[0017]所述多个微发光二极管包括：红色微发光二极管、绿色微发光二极管、及蓝色微发光二极管。\n\n[0018]所述封装层的材料为：聚对二甲苯、或有机树脂。\n\n[0019]本发明的有益效果：本发明提供一种微发光二极管显示面板，该微发光二极管显示面板的子像素区域内设有尺寸小于子像素区域的尺寸的微发光二极管，并在该微发光二极管的下方设有反射透镜层，通过反射透镜层将微发光二极管照射到反射透镜层上的光线反射到微发光二极管的原有发光区域的外围，进而扩大所述子像素区域中发光的区域的面积，提升显示品质，降低生产成本。\n\n附图说明\n\n[0020]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0021]附图中，\n\n[0022]图1为现有的微发光二极管显示面板的子像素中发光的区域的示意图；\n\n[0023]图2为本发明的微发光二极管显示面板的第一实施例的示意图；\n\n[0024]图3为本发明的微发光二极管显示面板的第二实施例的示意图；\n\n[0025]图4为本发明的微发光二极管显示面板的第三实施例的示意图；\n\n[0026]图5为本发明的微发光二极管显示面板的第四实施例的示意图；\n\n[0027]图6为本发明的微发光二极管显示面板的子像素区域中发光的区域的示意图。\n\n具体实施方式\n\n[0028]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0029]请参阅图2，本发明提供一种微发光二极管显示面板，如图2所示，在本发明的第一实施例中，所述微发光二极管显示面板包括：透明的基板1、设于所述基板1上表面上的阵列排布的多个子像素区域2、设于所述基板1上的各个子像素区域2内的微发光二极管3、覆盖所述多个微发光二极管3的透明的封装层4、以及设于所述基板1下表面上的反射透镜层5；\n\n[0030]每一个子像素区域2内设有一个微发光二极管3，且所述微发光二极管3的尺寸小于所述子像素区域2的尺寸；\n\n[0031]所述反射透镜层5将所述微发光二极管3发出的光线反射至所述微发光二极管3外围的子像素区域2中，扩大所述子像素区域2中发光的区域的面积。\n\n[0032]具体地，所述基板1优选玻璃基板，所述基板1上形成有驱动电路，所述驱动电路与所述微发光二极管3电性连接，通过所述驱动电路控制所述微发光二极管3发光。所述封装层4的材料可选择各类型的聚对二甲苯、或有机树脂。所述多个微发光二极管3可以包括：红色微发光二极管、绿色微发光二极管、及蓝色微发光二极管等各种颜色的微发光二极管。\n\n[0033]需要说明的是，所述反射透镜层5包括：多个反射透镜单元51，所述反射透镜单元51与所述微发光二极管3一一对应，也即每一个微发光二极管3的下方均设有一个反射透镜单元51，通过该反射透镜单元51反射微发光二极管3透过基板1照射到反射透镜单元51上的光线，所述反射透镜单元51将该光线反射至该微发光二极管3外围的子像素区域2中，进而使得子像素区域2除了设有微发光二极管3的区域发光以外，被反射透镜单元51反射的光线照射的区域也发光，进而扩大子像素区域2的发光的区域的面积。优选地，所述反射透镜单元51的形状为向远离基板1一侧凸起的曲面。\n\n[0034]值得一提的是，经过反射透镜层5的反射后子像素区域中发光的区域的光强大于微发光二极管3总发射光强的一半，设所述微发光二极管3的原有的发光区域的面积为a平方微米，而经过反射透镜层5的反射后子像素区域中需要达到的发光的区域的面积为b平方微米(b大于a)，此时微发光二极管3的原有的发光区域经过所述反射透镜层5的反射后扩大到的面积大小为b平方微米的发光的区域时，所述面积大小为b平方微米的发光的区域距离所述微发光二极管3的距离为L，L大于或等于b/a×10-5米且小于或等于b/a×10-2米，也即所述微发光二极管3的原有的发光区域经过所述反射透镜层5的反射后扩大到的需要的发光的区域的面积时，其与所述微发光二极管3之间的距离需要限定在合理的范围内。\n\n[0035]进一步地，请参阅图6，图6为本发明的微发光二极管显示面板中子像素区域中发光的区域的示意图，对比图1和图6，可见，经过反射透镜层5的反射作用后，在微发光二极管3的尺寸不变的前提下，子像素区域2中发光的区域的面积相比于原有的发光的区域面积显著增大，从而提升了微发光二极管显示面板的显示效果。\n\n[0036]具体地，为了进一步提升子像素区域2中发光的区域的扩大效果，在本发明的第二至第四实施例中，还在第一实施例的基础上增设了位于所述微发光二极管3的上方的散射单元，通过所述散射单元将所述微发光二极管3经由封装层4射出的光线向所述微发光二极管3的外围进行散射，以扩大所述子像素区域2中发光的区域的面积。\n\n[0037]请参阅图3，在本发明的第二实施例中，所述散射单元为设置在所述封装层4中的散射粒子41，通过所述散射粒子41对所述微发光二极管3的经由封装层4射出的光线进行散射，以扩大所述子像素区域2中发光的区域的面积。\n\n[0038]请参阅图4和图5，在本发明的第三和第四实施例中，所述散射单元为设置在所述封装层4上的散射透镜层6，通过所述散射透镜层6对所述微发光二极管3的经由封装层4和散射透镜层6射出的光线进行散射。所述散射透镜层6包括：多个散射透镜单元61，所述散射透镜单元61与所述微发光二极管3一一对应，也即每一个微发光二极管3的上方的封装层4上均设有一个散射透镜单元61。所述散射透镜单元61的形状可以根据需要进行相应的设计，例如，在本发明的第三实施例中，所述散射透镜单元61的形状为向远离基板1的一侧凸起的曲面。而在本发明的第四实施例中，所述散射透镜单元61的形状为锯齿形。\n\n[0039]综上所述，本发明提供一种微发光二极管显示面板，该微发光二极管显示面板的子像素区域内设有尺寸小于子像素区域的尺寸的微发光二极管，并在该微发光二极管的下方设有反射透镜层，通过反射透镜层将微发光二极管照射到反射透镜层上的光线反射到微发光二极管的原有发光区域的外围，进而扩大所述子像素区域中发光的区域的面积，提升显示品质，降低生产成本。\n\n[0040]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10574, 23628, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管阵列的转印方法。\n\n背景技术\n\n[0002]微发光二极管(Micro LED)是一种尺寸在几微米到几百微米之间的器件，由于其较普通LED的尺寸要小很多，从而使得单一的LED作为像素(Pixel)用于显示成为可能，Micro LED显示器便是一种以高密度的Micro LED阵列作为显示像素阵列来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但Micro LED显示器相比于OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0003]由于晶格匹配的原因，Micro LED器件必须先在蓝宝石类的供给基板上通过分子束外延的方法生长出来，随后通过激光剥离(Laser lift-off，LLO)技术将微发光二极管裸芯片(bare chip)从供给基板上分离开，然后通过微转印(Micro Transfer Print，NTP)技术将其转移到已经预先制备完成电路图案的接受基板上，形成Micro LED阵列，进而做成Micro LED显示面板。其中，微转印的基本原理大致为：使用具有图案化的传送头(Transferhead)，例如具有凸起结构的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)类传送头，通过具有粘性的PDMS传送层(Transfer layer)将Micro LED bare chip从供给基板吸附起来，然后将PDMS传送头与接受基板进行对位，随后将PDMS传送头所吸附的Micro LED barechip贴附到接受基板预设的位置上，再将PDMS传送头从接受基板上剥离，即可完成MicroLED bare chip的转移，形成Micro LED阵列。\n\n[0004]目前，来自爱尔兰的X-celeprint、美国德州大学等都曾发表过有关Micro LED显示器的研究成果。苹果公司于2014年正式收购具有Micro LED技术的LuxVue后，引发业界开始关注于Micro LED的技术优势，作为一家掌握Micro LED Transfer Printing的高技术公司，LuxVue与X-Celeprint所使用的微转移技术差别较大。X-Celeprint主要利用PDMS等膜层结构的吸附力进行转移动作，而LuxVue通过在传送头的凸起上通电，利用静电力来吸附Micro LED等器件。\n\n[0005]其中，对于PDMS类传送头的微转印方式，由于PDMS膜层上的凸起结构往往通过光刻等技术手段制成，其特点在于制备完成后将很难改动，使得一种PDMS传送头上的凸起排列图案(Pattern)往往对应一种微器件(Micro Device)在接受衬底上的排布方式。那么当使用PDMS类传送头对Micro LED进行转移时，由于PDMS膜层的粘附力在各处都近似，使得一次转印的图案结构被确定以后，无法适应于其他的图案结构。\n\n发明内容\n\n[0006]本发明的目的在于提供一种微发光二极管阵列的转印方法，可使用同一个PDMS传送头在接受基板上转印不同排列方式的微发光二极管阵列。\n\n[0007]为实现上述目的，本发明提供了一种微发光二极管阵列的转印方法，包括如下步骤：\n\n[0008]步骤1、提供传送头、及载体基板，所述载体基板上设有数个微发光二极管，利用所述传送头拾取所述载体基板上的微发光二极管；\n\n[0009]步骤2、提供接受基板，在所述接受基板上形成数个阵列排布的接受凸起；\n\n[0010]步骤3、将载有微发光二极管的传送头与所述接受基板进行对位，将传送头上的微发光二极管置于相对应的接受凸起上，从而对应所述数个接受凸起的阵列排布方式，完成微发光二极管阵列的转印。\n\n[0011]所述步骤2中所形成的接受凸起的材料为氮化硅、或氧化硅。\n\n[0012]所述步骤2中所形成的接受凸起的高度为0.01μm-100μm。\n\n[0013]所述步骤2中，采用光刻工艺在所述接受基板上形成所述数个接受凸起。\n\n[0014]所述步骤2还包括，通过光刻工艺在所述接受凸起、及接受基板上形成导线。\n\n[0015]所述导线的材料为氧化铟锡。\n\n[0016]所述步骤2还包括，在所述导线上设置低熔点焊盘。\n\n[0017]所述微发光二极管具有金属电极，所述步骤3还包括，在将微发光二极管置于所述接受凸起上之后，进行加热处理，使得导线上的低熔点焊盘熔化，从而将微发光二极管的金属电极与所述接受凸起上的导线导通，并使得所述微发光二极管固定于所述接受凸起上。\n\n[0018]所述步骤2中提供的接受基板为TFT阵列基板。\n\n[0019]所述传送头为PDMS传送头，包括PDMS膜层，所述PDMS膜层具有数个阵列排布的凸起结构，所述步骤1中通过所述PDMS膜层的凸起结构对所述微发光二极管进行拾取。\n\n[0020]本发明的有益效果：本发明提供了一种微发光二极管阵列的转印方法，在接受基板上设置数个接受凸起，微发光二极管被置于接受基板上相应的接受凸起上，因此，对于同一个传送头，通过改变数个接受凸起在接受基板上的排列方式，便可实现在接受基板上转印不同排列方式的微发光二极管阵列。\n\n附图说明\n\n[0021]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0022]附图中，\n\n[0023]图1为本发明的微发光二极管阵列的转印方法的流程示意图；\n\n[0024]图2-3为本发明的微发光二极管阵列的转印方法的步骤1的示意图；\n\n[0025]图4-6为本发明的微发光二极管阵列的转印方法的步骤3的示意图。\n\n具体实施方式\n\n[0026]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0027]请参阅图1，本发明提供一种微发光二极管阵列的转印方法，包括如下步骤：\n\n[0028]步骤1、如图2-3所示，提供传送头50、及载体基板10，所述载体基板10上设有数个微发光二极管40，利用所述传送头50拾取所述载体基板10上的微发光二极管40。\n\n[0029]具体地，所述传送头50可以为PDMS传送头，包括PDMS膜层，所述PDMS膜层具有数个阵列排布的凸起结构51，所述步骤1中利用所述PDMS膜层的凸起结构51通过吸附力对所述微发光二极管40进行拾取。除此之外，所述传送头50还可以为其他类型的传送头，比如通过静电力来进行拾取的传送头。\n\n[0030]具体地，在所述载体基板10上，所述微发光二极管40靠近载体基板10的一侧具有金属电极41。\n\n[0031]步骤2、提供接受基板20，在所述接受基板20上形成数个阵列排布的接受凸起21。\n\n[0032]具体地，所述数个接受凸起21在接受基板20上构成接受凸起阵列，其中所述数个接受凸起21在在所述接受基板20上具体的排列方式，根据在接受基板20上所需要转印的微发光二极管阵列的排列方式而定。\n\n[0033]具体地，所述步骤2中所形成的接受凸起21的材料为氮化硅、或氧化硅等。\n\n[0034]具体地，所述步骤2中所形成的接受凸起21的高度为0.01μm-100μm，从而使得后续将传送头50上的微发光二极管40转移到接受基板20时，仅接受基板20上的接受凸起21能够与微发光二极管40接触，而其他部分不能与微发光二极管40接触，使得微发光二极管40被相应置于接受凸起21上。\n\n[0035]具体地，所述步骤2中，采用光刻工艺在所述接受基板20上形成所述数个接受凸起21，所述光刻工艺具体包括光阻涂布、曝光、显影、及蚀刻等步骤。\n\n[0036]具体地，所述步骤2还包括，通过光刻工艺在所述接受凸起21上形成导线22，在所述导线22上设置低熔点焊盘。\n\n[0037]具体地，所述导线22为具有导电性的材料，所述导线22的材料优选为氧化铟锡(ITO)。\n\n[0038]步骤3、如图4-6所示，将载有微发光二极管40的传送头50与所述接受基板20进行对位，将传送头50上的微发光二极管40置于相对应的接受凸起21上，从而对应所述数个接受凸起21的阵列排布方式，完成微发光二极管阵列的转印。\n\n[0039]具体地，所述步骤3还包括，在将微发光二极管40置于所述接受凸起21上之后，进行加热处理，使得导线22上的低熔点焊盘熔化，从而将微发光二极管40的金属电极41与所述接受凸起21上的导线22导通，并使得所述微发光二极管40固定于所述接受凸起21上。\n\n[0040]具体地，所述步骤2中提供的接受基板20为TFT阵列基板，从而在完成微发光二极管阵列的转印之后，可进一步用于制作微发光二极管显示器。\n\n[0041]综上所述，本发明提供了一种微发光二极管阵列的转印方法，在接受基板上设置数个接受凸起，微发光二极管被置于接受基板上相应的接受凸起上，因此，对于同一个传送头，通过改变数个接受凸起在接受基板上的排列方式，便可实现在接受基板上转印不同排列方式的微发光二极管阵列。\n\n[0042]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管阵列的转印方法。\n\n背景技术\n\n[0002]微发光二极管(Micro LED)是一种尺寸在几微米到几百微米之间的器件，由于其较普通LED的尺寸要小很多，从而使得单一的LED作为像素(Pixel)用于显示成为可能，Micro LED显示器便是一种以高密度的Micro LED阵列作为显示像素阵列来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但Micro LED显示器相比于OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0003]由于晶格匹配的原因，Micro LED器件必须先在蓝宝石类的供给基板上通过分子束外延的方法生长出来，随后通过激光剥离(Laser lift-off，LLO)技术将微发光二极管裸芯片(bare chip)从供给基板上分离开，然后通过微转印(Micro Transfer Print，NTP)技术将其转移到已经预先制备完成电路图案的接受基板上，形成Micro LED阵列，进而做成Micro LED显示面板。其中，微转印的基本原理大致为：使用具有图案化的传送头(Transferhead)，例如具有凸起结构的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)类传送头，通过具有粘性的PDMS传送层(Transfer layer)将Micro LED bare chip从供给基板吸附起来，然后将PDMS传送头与接受基板进行对位，随后将PDMS传送头所吸附的Micro LED barechip贴附到接受基板预设的位置上，再将PDMS传送头从接受基板上剥离，即可完成MicroLED bare chip的转移，形成Micro LED阵列。\n\n[0004]目前，来自爱尔兰的X-celeprint、美国德州大学等都曾发表过有关Micro LED显示器的研究成果。苹果公司于2014年正式收购具有Micro LED技术的LuxVue后，引发业界开始关注于Micro LED的技术优势，作为一家掌握Micro LED Transfer Printing的高技术公司，LuxVue与X-Celeprint所使用的微转移技术差别较大。X-Celeprint主要利用PDMS等膜层结构的吸附力进行转移动作，而LuxVue通过在传送头的凸起上通电，利用静电力来吸附Micro LED等器件。\n\n[0005]其中，对于PDMS类传送头的微转印方式，由于PDMS膜层上的凸起结构往往通过光刻等技术手段制成，其特点在于制备完成后将很难改动，使得一种PDMS传送头上的凸起排列图案(Pattern)往往对应一种微器件(Micro Device)在接受衬底上的排布方式。那么当使用PDMS类传送头对Micro LED进行转移时，由于PDMS膜层的粘附力在各处都近似，使得一次转印的图案结构被确定以后，无法适应于其他的图案结构。\n\n发明内容\n\n[0006]本发明的目的在于提供一种微发光二极管阵列的转印方法，可使用同一个PDMS传送头在接受基板上转印不同排列方式的微发光二极管阵列。\n\n[0007]为实现上述目的，本发明提供了一种微发光二极管阵列的转印方法，包括如下步骤：\n\n[0008]步骤1、提供传送头、及载体基板，所述载体基板上设有数个微发光二极管，利用所述传送头拾取所述载体基板上的微发光二极管；\n\n[0009]步骤2、提供接受基板，在所述接受基板上形成数个阵列排布的接受凸起；\n\n[0010]步骤3、将载有微发光二极管的传送头与所述接受基板进行对位，将传送头上的微发光二极管置于相对应的接受凸起上，从而对应所述数个接受凸起的阵列排布方式，完成微发光二极管阵列的转印。\n\n[0011]所述步骤2中所形成的接受凸起的材料为氮化硅、或氧化硅。\n\n[0012]所述步骤2中所形成的接受凸起的高度为0.01μm-100μm。\n\n[0013]所述步骤2中，采用光刻工艺在所述接受基板上形成所述数个接受凸起。\n\n[0014]所述步骤2还包括，通过光刻工艺在所述接受凸起、及接受基板上形成导线。\n\n[0015]所述导线的材料为氧化铟锡。\n\n[0016]所述步骤2还包括，在所述导线上设置低熔点焊盘。\n\n[0017]所述微发光二极管具有金属电极，所述步骤3还包括，在将微发光二极管置于所述接受凸起上之后，进行加热处理，使得导线上的低熔点焊盘熔化，从而将微发光二极管的金属电极与所述接受凸起上的导线导通，并使得所述微发光二极管固定于所述接受凸起上。\n\n[0018]所述步骤2中提供的接受基板为TFT阵列基板。\n\n[0019]所述传送头为PDMS传送头，包括PDMS膜层，所述PDMS膜层具有数个阵列排布的凸起结构，所述步骤1中通过所述PDMS膜层的凸起结构对所述微发光二极管进行拾取。\n\n[0020]本发明的有益效果：本发明提供了一种微发光二极管阵列的转印方法，在接受基板上设置数个接受凸起，微发光二极管被置于接受基板上相应的接受凸起上，因此，对于同一个传送头，通过改变数个接受凸起在接受基板上的排列方式，便可实现在接受基板上转印不同排列方式的微发光二极管阵列。\n\n附图说明\n\n[0021]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0022]附图中，\n\n[0023]图1为本发明的微发光二极管阵列的转印方法的流程示意图；\n\n[0024]图2-3为本发明的微发光二极管阵列的转印方法的步骤1的示意图；\n\n[0025]图4-6为本发明的微发光二极管阵列的转印方法的步骤3的示意图。\n\n具体实施方式\n\n[0026]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0027]请参阅图1，本发明提供一种微发光二极管阵列的转印方法，包括如下步骤：\n\n[0028]步骤1、如图2-3所示，提供传送头50、及载体基板10，所述载体基板10上设有数个微发光二极管40，利用所述传送头50拾取所述载体基板10上的微发光二极管40。\n\n[0029]具体地，所述传送头50可以为PDMS传送头，包括PDMS膜层，所述PDMS膜层具有数个阵列排布的凸起结构51，所述步骤1中利用所述PDMS膜层的凸起结构51通过吸附力对所述微发光二极管40进行拾取。除此之外，所述传送头50还可以为其他类型的传送头，比如通过静电力来进行拾取的传送头。\n\n[0030]具体地，在所述载体基板10上，所述微发光二极管40靠近载体基板10的一侧具有金属电极41。\n\n[0031]步骤2、提供接受基板20，在所述接受基板20上形成数个阵列排布的接受凸起21。\n\n[0032]具体地，所述数个接受凸起21在接受基板20上构成接受凸起阵列，其中所述数个接受凸起21在在所述接受基板20上具体的排列方式，根据在接受基板20上所需要转印的微发光二极管阵列的排列方式而定。\n\n[0033]具体地，所述步骤2中所形成的接受凸起21的材料为氮化硅、或氧化硅等。\n\n[0034]具体地，所述步骤2中所形成的接受凸起21的高度为0.01μm-100μm，从而使得后续将传送头50上的微发光二极管40转移到接受基板20时，仅接受基板20上的接受凸起21能够与微发光二极管40接触，而其他部分不能与微发光二极管40接触，使得微发光二极管40被相应置于接受凸起21上。\n\n[0035]具体地，所述步骤2中，采用光刻工艺在所述接受基板20上形成所述数个接受凸起21，所述光刻工艺具体包括光阻涂布、曝光、显影、及蚀刻等步骤。\n\n[0036]具体地，所述步骤2还包括，通过光刻工艺在所述接受凸起21上形成导线22，在所述导线22上设置低熔点焊盘。\n\n[0037]具体地，所述导线22为具有导电性的材料，所述导线22的材料优选为氧化铟锡(ITO)。\n\n[0038]步骤3、如图4-6所示，将载有微发光二极管40的传送头50与所述接受基板20进行对位，将传送头50上的微发光二极管40置于相对应的接受凸起21上，从而对应所述数个接受凸起21的阵列排布方式，完成微发光二极管阵列的转印。\n\n[0039]具体地，所述步骤3还包括，在将微发光二极管40置于所述接受凸起21上之后，进行加热处理，使得导线22上的低熔点焊盘熔化，从而将微发光二极管40的金属电极41与所述接受凸起21上的导线22导通，并使得所述微发光二极管40固定于所述接受凸起21上。\n\n[0040]具体地，所述步骤2中提供的接受基板20为TFT阵列基板，从而在完成微发光二极管阵列的转印之后，可进一步用于制作微发光二极管显示器。\n\n[0041]综上所述，本发明提供了一种微发光二极管阵列的转印方法，在接受基板上设置数个接受凸起，微发光二极管被置于接受基板上相应的接受凸起上，因此，对于同一个传送头，通过改变数个接受凸起在接受基板上的排列方式，便可实现在接受基板上转印不同排列方式的微发光二极管阵列。\n\n[0042]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10575, 23629, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管显示面板。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED，μLED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，μLED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但μLED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]微转印(Micro Transfer Printing)技术是目前制备μLED显示装置的主流方法，具体制备过程为：首先在蓝宝石类基板生长出微发光二极管，然后通过激光剥离技术(Laser lift-off，LLO)将微发光二极管裸芯片(bare chip)从蓝宝石类基板上分离开，随后使用一个图案化的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)传送头将微发光二极管裸芯片从蓝宝石类基板吸附起来，并将PDMS传送头与接收基板进行对位，随后将PDMS传送头所吸附的微发光二极管裸芯片贴附到接收基板上预设的位置，再剥离PDMS传送头，即可完成将微发光二极管裸芯片转移到接收基板上，进而制得μLED显示装置。\n\n[0005]目前液晶显示面板等平板显示面板中的子像素的尺寸相对于微发光二极管的尺寸而言都是比较大的，若在相当于现有的子像素区域大小的面积空间对应填充一个小尺寸的微发光二极管，则会在各个子像素区域之间产生较大的空隙，造成纱门效应，即在显示图像上好像覆盖了某种黑色网格，类似透过纱门观看到的景象，为了解决纱门效应，提出了相当于现有的子像素区域大小的面积空间内填充若干个微发光二极管以填满整个子像素区域的方法，但这种方法需要数量众多的微发光二极管，造成成本过高。\n\n发明内容\n\n[0006]本发明的目的在于提供一种微发光二极管显示面板，能够实现微发光二极管显示面板的高分辨率显示，消除纱门效应，降低生产成本。\n\n[0007]为了实现上述目的，本发明提供了一种微发光二极管显示面板，包括：基板、设于所述基板上的阵列排布的多个显示区；\n\n[0008]每一个显示区内都均匀间隔排布有多个微发光二极管。\n\n[0009]所述每一个显示区的形状均为矩形。\n\n[0010]所述奇数行奇数列的显示区和偶数行偶数列的显示区内的微发光二极管的数量均为5个，其中4个微发光二极管分别位于所述显示区的四角，剩余的1个微发光二极管位于所述显示区中央；\n\n[0011]所述奇数行偶数列的显示区和偶数行奇数列的显示区内的微发光二极管的数量均为4个，该4个微发光二极管分别位于所述显示区的四条边的中点处。\n\n[0012]同一列的显示区内的微发光二极管的发光颜色相同，相邻两列的显示区内的微发光二极管的发光颜色不同。\n\n[0013]设M为正整数，第3M-2列显示区内的微发光二极管的发光颜色均为红色，第3M-1列显示区内的微发光二极管的发光颜色均为绿色，第3M列显示区内的微发光二极管的发光颜色均为蓝色。\n\n[0014]每一个显示区均阵列排布有三行三列共9个微发光二极管。\n\n[0015]同一个显示区内相邻的两微发光二极管的发光颜色不同。\n\n[0016]每一个显示区中第一行的三列微发光二极管的发光颜色依次为红色、绿色、及蓝色，第二行的三列微发光二极管的发光颜色依次为绿色、红色、及蓝色，第三行的三列微发光二极管的发光颜色依次为蓝色、绿色、及红色。\n\n[0017]每一个显示区内均设有4个微发光二极管，该4个微发光二极管分别位于所述显示区的四条边的中点处，其中两条对边的中点处的微发光二极管的发光颜色均为红色，另外两条对边处的中点处的微发光二极管的发光颜色分别为绿色、及蓝色。\n\n[0018]所述微发光二极管采用微转印的方法制备。\n\n[0019]本发明的有益效果：本发明提供了一种微发光二极管显示面板，通过将在基板上设置阵列排布的多个显示区，并在各个显示区内均匀排布多个微发光二极管，能够实现微发光二极管显示面板的高分辨率显示，并通过控制各个显示区内微发光二极管的数量，在消除纱门效应的同时有效控制生产成本，提升微发光二极管显示面板的市场竞争力。\n\n附图说明\n\n[0020]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0021]附图中，\n\n[0022]图1为本发明的微发光二极管显示面板的第一实施例的示意图；\n\n[0023]图2为本发明的微发光二极管显示面板的第二实施例的示意图；\n\n[0024]图3为本发明的微发光二极管显示面板的第三实施例的示意图；\n\n[0025]图4为本发明的微发光二极管显示面板的第四实施例的示意图。\n\n具体实施方式\n\n[0026]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0027]请参阅图1至图4，本发明提供一种微发光二极管显示面板，包括：基板1、设于所述基板1上的阵列排布的多个显示区2；\n\n[0028]每一个显示区2内都均匀间隔排布有多个微发光二极管3。\n\n[0029]具体地，所述显示区2为相当于一个大的像素区域，对比于现有技术，该大的像素区域内的微发光二极管3既不是密集的填满整个区域，也不是只设置一个，而是均匀排布多个，相比于密集的填满，本发明需要的微发光二极管3的数量较少，成本较低，相比于只设置一个，本发明的微发光二极管3的数量较多且排列均匀，能够有效的消除纱门效应，也即本发明的微发光二极管显示面板，能够在保证显示品质(不产生纱门效应)同时兼顾生产成本，具有更高的性价比，更好的市场竞争力。\n\n[0030]具体地，所述每一个显示区2的形状均为矩形，各个显示区2内的多个微发光二极管3的数量、排列方式、及发光颜色组合可以根据需要进行相应的设计，下面通过本发明的第一至第四实施例进行详细说明。\n\n[0031]请参阅图1，在本发明的第一实施例中，所述奇数行奇数列的显示区2和偶数行偶数列的显示区2内的微发光二极管3的数量均为5个，其中4个微发光二极管3分别位于所述显示区2的四角，剩余的1个微发光二极管3位于所述显示区2中央；所述奇数行偶数列的显示区2和偶数行奇数列的显示区2内的微发光二极管3的数量均为4个，该4个微发光二极管3分别位于所述显示区2的四条边的中点处。\n\n[0032]进一步地，同一列的显示区2内的微发光二极管3的发光颜色相同，相邻两列的显示区2内的微发光二极管3的发光颜色不同。在本发明的第一实施例中，采用红绿蓝三原色进行色彩显示，其中，设M为正整数，第3M-2列显示区2内的微发光二极管3的发光颜色均为红色，第3M-1列显示区2内的微发光二极管的发光颜色均为绿色，第3M列显示区2内的微发光二极管的发光颜色均为蓝色。\n\n[0033]请参阅图2，在本发明的第二实施例中，每一个显示区2均阵列排布有三行三列共9个微发光二极管3。\n\n[0034]进一步地，同一个显示区2内相邻的两微发光二极管3的发光颜色不同。每一个显示区2中第一行的三列微发光二极管3的发光颜色依次为红色、绿色、及蓝色，第二行的三列微发光二极管3的发光颜色依次为绿色、红色、及蓝色，第三行的三列微发光二极管3的发光颜色依次为蓝色、绿色、及红色。\n\n[0035]可以理解的是，上述实施例中各列微发光二极管3的发光颜色排列次序仅为一个示例，根据需要所述各个微发光二极管3的发光颜色排列次序还可以为其他顺序，如在第一实施例中第3M-2列显示区2内的微发光二极管3的发光颜色均为绿色，第3M-1列显示区2内的微发光二极管的发光颜色均为红色，第3M列显示区2内的微发光二极管的发光颜色均为蓝色等，在第二实施例中第一行的三列微发光二极管3的发光颜色依次为蓝色、绿色、及红色，第二行的三列微发光二极管3的发光颜色依次为绿色、红色、及蓝色，第三行的三列微发光二极管3的发光颜色依次为红色、蓝色、绿色等，甚至所有显示区2中的微发光二极管3均为同一个发光颜色，形成一个单色微发光二极管显示面板，或者各个显示区2中的微发光二极管3的发光颜色只有两个，形成一个双色微发光二极管显示面板，另外，所述微发光二极管3的发光颜色也不仅仅只有红、绿、及蓝三色，根据需要其还可以有其他发光颜色，如白色与黄色等。\n\n[0036]此外，由于目前制备出来的不同发光颜色的微发光二极管的发光效率存在差异，还可以根据需要在各个显示区内进行不等比例的排列，即在各个显示区内设置数目不同的不同发光颜色的微发光二极管，如图3和图4所示，在本发明的第三和四实施例中，各个显示区2中均包括两个红色微发光二极管(相比绿色和蓝色微发光二极管其发光效率较低)、一个绿色微发光二极管、一个蓝色微发光二极管，通过增设更多的红色微发光二极管，来弥补红色微发光二极管发光效率低的问题。\n\n[0037]具体地，请参阅图3，在本发明的第三实施例中，每一个显示区内均设有4个微发光二极管3，该4个微发光二极管3分别位于所述显示区2的四条边的中点处，其中上下两条对边的中点处的微发光二极管3的发光颜色均为红色，左右两条对边处的中点处的微发光二极管3的发光颜色分别为绿色、及蓝色。而在本发明的第四实施例中，上下两条对边的中点处的微发光二极管3的发光颜色分别为绿色、及蓝色，左右两条对边处的中点处的微发光二极管3的发光颜色均为红色。\n\n[0038]可以理解的是，这种不等比例排列的方式并不局限于本发明的第三及第四实施例，根据需要其还可以设计为其他的微发光二极管数量，其他的排列方式，其他的微发光二极管发光颜色组合。\n\n[0039]值得一提的是，本发明中所述微发光二极管3均可以采用微转印的方法制备，具体为，首先提供一原生基板，在所述原生基板上生成多个微发光二极管3，再通过一微转印传送头将所述多个微发光二极管3转印到基板1上。\n\n[0040]综上所述，本发明提供了一种微发光二极管显示面板，通过将在基板上设置阵列排布的多个显示区，并在各个显示区内均匀排布多个微发光二极管，能够实现微发光二极管显示面板的高分辨率显示，并通过控制各个显示区内微发光二极管的数量，在消除纱门效应的同时有效控制生产成本，提升微发光二极管显示面板的市场竞争力。\n\n[0041]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管显示面板。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED，μLED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，μLED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但μLED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]微转印(Micro Transfer Printing)技术是目前制备μLED显示装置的主流方法，具体制备过程为：首先在蓝宝石类基板生长出微发光二极管，然后通过激光剥离技术(Laser lift-off，LLO)将微发光二极管裸芯片(bare chip)从蓝宝石类基板上分离开，随后使用一个图案化的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)传送头将微发光二极管裸芯片从蓝宝石类基板吸附起来，并将PDMS传送头与接收基板进行对位，随后将PDMS传送头所吸附的微发光二极管裸芯片贴附到接收基板上预设的位置，再剥离PDMS传送头，即可完成将微发光二极管裸芯片转移到接收基板上，进而制得μLED显示装置。\n\n[0005]目前液晶显示面板等平板显示面板中的子像素的尺寸相对于微发光二极管的尺寸而言都是比较大的，若在相当于现有的子像素区域大小的面积空间对应填充一个小尺寸的微发光二极管，则会在各个子像素区域之间产生较大的空隙，造成纱门效应，即在显示图像上好像覆盖了某种黑色网格，类似透过纱门观看到的景象，为了解决纱门效应，提出了相当于现有的子像素区域大小的面积空间内填充若干个微发光二极管以填满整个子像素区域的方法，但这种方法需要数量众多的微发光二极管，造成成本过高。\n\n发明内容\n\n[0006]本发明的目的在于提供一种微发光二极管显示面板，能够实现微发光二极管显示面板的高分辨率显示，消除纱门效应，降低生产成本。\n\n[0007]为了实现上述目的，本发明提供了一种微发光二极管显示面板，包括：基板、设于所述基板上的阵列排布的多个显示区；\n\n[0008]每一个显示区内都均匀间隔排布有多个微发光二极管。\n\n[0009]所述每一个显示区的形状均为矩形。\n\n[0010]所述奇数行奇数列的显示区和偶数行偶数列的显示区内的微发光二极管的数量均为5个，其中4个微发光二极管分别位于所述显示区的四角，剩余的1个微发光二极管位于所述显示区中央；\n\n[0011]所述奇数行偶数列的显示区和偶数行奇数列的显示区内的微发光二极管的数量均为4个，该4个微发光二极管分别位于所述显示区的四条边的中点处。\n\n[0012]同一列的显示区内的微发光二极管的发光颜色相同，相邻两列的显示区内的微发光二极管的发光颜色不同。\n\n[0013]设M为正整数，第3M-2列显示区内的微发光二极管的发光颜色均为红色，第3M-1列显示区内的微发光二极管的发光颜色均为绿色，第3M列显示区内的微发光二极管的发光颜色均为蓝色。\n\n[0014]每一个显示区均阵列排布有三行三列共9个微发光二极管。\n\n[0015]同一个显示区内相邻的两微发光二极管的发光颜色不同。\n\n[0016]每一个显示区中第一行的三列微发光二极管的发光颜色依次为红色、绿色、及蓝色，第二行的三列微发光二极管的发光颜色依次为绿色、红色、及蓝色，第三行的三列微发光二极管的发光颜色依次为蓝色、绿色、及红色。\n\n[0017]每一个显示区内均设有4个微发光二极管，该4个微发光二极管分别位于所述显示区的四条边的中点处，其中两条对边的中点处的微发光二极管的发光颜色均为红色，另外两条对边处的中点处的微发光二极管的发光颜色分别为绿色、及蓝色。\n\n[0018]所述微发光二极管采用微转印的方法制备。\n\n[0019]本发明的有益效果：本发明提供了一种微发光二极管显示面板，通过将在基板上设置阵列排布的多个显示区，并在各个显示区内均匀排布多个微发光二极管，能够实现微发光二极管显示面板的高分辨率显示，并通过控制各个显示区内微发光二极管的数量，在消除纱门效应的同时有效控制生产成本，提升微发光二极管显示面板的市场竞争力。\n\n附图说明\n\n[0020]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0021]附图中，\n\n[0022]图1为本发明的微发光二极管显示面板的第一实施例的示意图；\n\n[0023]图2为本发明的微发光二极管显示面板的第二实施例的示意图；\n\n[0024]图3为本发明的微发光二极管显示面板的第三实施例的示意图；\n\n[0025]图4为本发明的微发光二极管显示面板的第四实施例的示意图。\n\n具体实施方式\n\n[0026]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0027]请参阅图1至图4，本发明提供一种微发光二极管显示面板，包括：基板1、设于所述基板1上的阵列排布的多个显示区2；\n\n[0028]每一个显示区2内都均匀间隔排布有多个微发光二极管3。\n\n[0029]具体地，所述显示区2为相当于一个大的像素区域，对比于现有技术，该大的像素区域内的微发光二极管3既不是密集的填满整个区域，也不是只设置一个，而是均匀排布多个，相比于密集的填满，本发明需要的微发光二极管3的数量较少，成本较低，相比于只设置一个，本发明的微发光二极管3的数量较多且排列均匀，能够有效的消除纱门效应，也即本发明的微发光二极管显示面板，能够在保证显示品质(不产生纱门效应)同时兼顾生产成本，具有更高的性价比，更好的市场竞争力。\n\n[0030]具体地，所述每一个显示区2的形状均为矩形，各个显示区2内的多个微发光二极管3的数量、排列方式、及发光颜色组合可以根据需要进行相应的设计，下面通过本发明的第一至第四实施例进行详细说明。\n\n[0031]请参阅图1，在本发明的第一实施例中，所述奇数行奇数列的显示区2和偶数行偶数列的显示区2内的微发光二极管3的数量均为5个，其中4个微发光二极管3分别位于所述显示区2的四角，剩余的1个微发光二极管3位于所述显示区2中央；所述奇数行偶数列的显示区2和偶数行奇数列的显示区2内的微发光二极管3的数量均为4个，该4个微发光二极管3分别位于所述显示区2的四条边的中点处。\n\n[0032]进一步地，同一列的显示区2内的微发光二极管3的发光颜色相同，相邻两列的显示区2内的微发光二极管3的发光颜色不同。在本发明的第一实施例中，采用红绿蓝三原色进行色彩显示，其中，设M为正整数，第3M-2列显示区2内的微发光二极管3的发光颜色均为红色，第3M-1列显示区2内的微发光二极管的发光颜色均为绿色，第3M列显示区2内的微发光二极管的发光颜色均为蓝色。\n\n[0033]请参阅图2，在本发明的第二实施例中，每一个显示区2均阵列排布有三行三列共9个微发光二极管3。\n\n[0034]进一步地，同一个显示区2内相邻的两微发光二极管3的发光颜色不同。每一个显示区2中第一行的三列微发光二极管3的发光颜色依次为红色、绿色、及蓝色，第二行的三列微发光二极管3的发光颜色依次为绿色、红色、及蓝色，第三行的三列微发光二极管3的发光颜色依次为蓝色、绿色、及红色。\n\n[0035]可以理解的是，上述实施例中各列微发光二极管3的发光颜色排列次序仅为一个示例，根据需要所述各个微发光二极管3的发光颜色排列次序还可以为其他顺序，如在第一实施例中第3M-2列显示区2内的微发光二极管3的发光颜色均为绿色，第3M-1列显示区2内的微发光二极管的发光颜色均为红色，第3M列显示区2内的微发光二极管的发光颜色均为蓝色等，在第二实施例中第一行的三列微发光二极管3的发光颜色依次为蓝色、绿色、及红色，第二行的三列微发光二极管3的发光颜色依次为绿色、红色、及蓝色，第三行的三列微发光二极管3的发光颜色依次为红色、蓝色、绿色等，甚至所有显示区2中的微发光二极管3均为同一个发光颜色，形成一个单色微发光二极管显示面板，或者各个显示区2中的微发光二极管3的发光颜色只有两个，形成一个双色微发光二极管显示面板，另外，所述微发光二极管3的发光颜色也不仅仅只有红、绿、及蓝三色，根据需要其还可以有其他发光颜色，如白色与黄色等。\n\n[0036]此外，由于目前制备出来的不同发光颜色的微发光二极管的发光效率存在差异，还可以根据需要在各个显示区内进行不等比例的排列，即在各个显示区内设置数目不同的不同发光颜色的微发光二极管，如图3和图4所示，在本发明的第三和四实施例中，各个显示区2中均包括两个红色微发光二极管(相比绿色和蓝色微发光二极管其发光效率较低)、一个绿色微发光二极管、一个蓝色微发光二极管，通过增设更多的红色微发光二极管，来弥补红色微发光二极管发光效率低的问题。\n\n[0037]具体地，请参阅图3，在本发明的第三实施例中，每一个显示区内均设有4个微发光二极管3，该4个微发光二极管3分别位于所述显示区2的四条边的中点处，其中上下两条对边的中点处的微发光二极管3的发光颜色均为红色，左右两条对边处的中点处的微发光二极管3的发光颜色分别为绿色、及蓝色。而在本发明的第四实施例中，上下两条对边的中点处的微发光二极管3的发光颜色分别为绿色、及蓝色，左右两条对边处的中点处的微发光二极管3的发光颜色均为红色。\n\n[0038]可以理解的是，这种不等比例排列的方式并不局限于本发明的第三及第四实施例，根据需要其还可以设计为其他的微发光二极管数量，其他的排列方式，其他的微发光二极管发光颜色组合。\n\n[0039]值得一提的是，本发明中所述微发光二极管3均可以采用微转印的方法制备，具体为，首先提供一原生基板，在所述原生基板上生成多个微发光二极管3，再通过一微转印传送头将所述多个微发光二极管3转印到基板1上。\n\n[0040]综上所述，本发明提供了一种微发光二极管显示面板，通过将在基板上设置阵列排布的多个显示区，并在各个显示区内均匀排布多个微发光二极管，能够实现微发光二极管显示面板的高分辨率显示，并通过控制各个显示区内微发光二极管的数量，在消除纱门效应的同时有效控制生产成本，提升微发光二极管显示面板的市场竞争力。\n\n[0041]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10576, 23630, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管显示面板及其制作方法。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但Micro LED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]由于晶格匹配的原因，微发光二极管器件必须先在蓝宝石类的基板上通过分子束外延的方法生长出来，而做成显示面板，还必须要把微发光二极管器件从蓝宝石类的基板上转移到用于形成显示面板的接收基板上，微转印(Micro Transfer Printing)就是一种将生长在蓝宝石类基板上的微发光二极管器件转移到接收基板上的技术，具体为，首先通过激光剥离技术(Laser lift-off，LLO)将微发光二极管裸芯片(bare chip)从蓝宝石类基板上分离开，随后使用一个图案化的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)传送头将微发光二极管裸芯片从蓝宝石类基板吸附起来，并将PDMS传送头与接收基板进行对位，随后将PDMS传送头所吸附的微发光二极管裸芯片贴附到接收基板上预设的位置，再剥离PDMS传送头，即可完成微发光二极管裸芯片的转移，形成微发光二极管阵列基板，进一步地，所述接收基板是已经预先制备完成电路图案的硅基板，其可以为柔性也可以为刚性。\n\n[0005]由于仅仅利用微发光二极管作为基本显示单元的微发光二极管显示器的色域很窄，显示效果较差，因此，为了优化微发光二极管显示器的显示效果，需要对其色域进行拓宽。\n\n发明内容\n\n[0006]本发明的目的在于提供一种微发光二极管显示面板，能够扩大微发光二极管显示面板的色域，提升微发光二极管显示面板的画质。\n\n[0007]本发明的目的还在于提供一种微发光二极管显示面板的制作方法，能够扩大微发光二极管显示面板的色域，提升微发光二极管显示面板的画质。\n\n[0008]为实现上述目的，本发明提供了一种微发光二极管显示面板，包括：基板、设于所述基板上的阵列排布的多个微发光二极管、覆盖所述多个微发光二极管的透明的封装层、以及设于所述封装层上的量子点层。\n\n[0009]所述基板为柔性基板、或刚性基板。\n\n[0010]所述封装层的材料为：聚对二甲苯、或有机树脂。\n\n[0011]所述多个微发光二极管包括：红色微发光二极管、绿色微发光二极管、及蓝色微发光二极管。\n\n[0012]所述量子点层包括：设于各个红色微发光二极管上方的红色量子点区、设于各个绿色微发光二极管上方的绿色量子点区、及设于各个蓝色微发光二极管上方的蓝色量子点区。\n\n[0013]本发明还提供一种微发光二极管显示面板的制作方法，包括如下步骤：\n\n[0014]步骤1、提供一基板，在所述基板上形成阵列排布的多个微发光二极管；\n\n[0015]步骤2、在所述多个微发光二极管上覆盖透明的封装层，对所述多个微发光二极管进行封装；\n\n[0016]步骤3、在所述封装层上形成量子点层。\n\n[0017]所述步骤1具体包括：首先提供一原生基板，在所述原生基板上生成多个微发光二极管，再通过微转印的方法将所述多个微发光二极管转印到基板上；\n\n[0018]所述原生基板为蓝宝石类基板；\n\n[0019]所述基板为柔性基板、或刚性基板。\n\n[0020]所述步骤2中通过旋涂的方法在所述多个微发光二极管上覆盖封装层；\n\n[0021]所述封装层的材料为：聚对二甲苯、或有机树脂。\n\n[0022]所述多个微发光二极管包括：红色微发光二极管、绿色微发光二极管、及蓝色微发光二极管。\n\n[0023]所述量子点层包括：设于各个红色微发光二极管上方的红色量子点区、设于各个绿色微发光二极管上方的绿色量子点区、及设于各个蓝色微发光二极管上方的蓝色量子点区。\n\n[0024]本发明的有益效果：本发明提供了一种微发光二极管显示面板，其包括：基板、设于所述基板上的阵列排布的多个微发光二极管、覆盖所述多个微发光二极管的透明的封装层、以及设于所述封装层上的量子点层，通过在封装层上增设量子点层，利用微发光二极管发出的短波长光激发量子点层发光，从而使微发光二极管和量子点层共同组成微发光二极管显示面板的基本显示单元，能够扩大微发光二极管显示面板的色域，提升微发光二极管显示面板的显示品质。本发明还提供一种微发光二极管显示面板的制作方法，能够扩大微发光二极管显示面板的色域，提升微发光二极管显示面板的显示品质。\n\n附图说明\n\n[0025]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0026]附图中，\n\n[0027]图1为本发明的微发光二极管显示面板的第一实施例的结构示意图；\n\n[0028]图2为本发明的微发光二极管显示面板的第二实施例的结构示意图；\n\n[0029]图3为本发明的微发光二极管显示面板的制作方法的流程图。\n\n具体实施方式\n\n[0030]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0031]请参阅图1或图2，本发明首先提供一种微发光二极管显示面板，包括：基板1、设于所述基板1上的阵列排布的多个微发光二极管2、覆盖所述多个微发光二极管2的透明的封装层3、以及设于所述封装层3上的量子点层4。\n\n[0032]具体地，所述基板1为柔性基板、或刚性基板，所述多个微发光二极管2通过微转印的方法由蓝宝石类的原生基板上转印到基板1上，所述基板1在转印前预先形成有电路图案，以驱动所述多个微发光二极管2发光，所述微发光二极管2可选择基于氮化镓(GaN)的发光二极管，所述基板1为硅基板。\n\n[0033]进一步地，所述封装层3的作用为保护微发光二极管2，防止水汽侵入，并且需要具备良好耐热性、绝缘性和成膜稳定性，可选的材料包括但不限于各类型聚对二甲苯、或有机树脂。所述封装层3的可通过旋涂工艺形成，厚度在50nm至0.5mm之间。可选地，如图1所示，在本发明的第一实施例中，所述封装层3在各个微发光二极管2的间隔处的厚度大于微发光二极管2上的厚度，使得封装层3上表面为一平整表面，所述量子点层4的上表面也为一平整表面。如图2所示，在本发明的第二实施例中，所述封装层3在各个微发光二极管2的间隔处的厚度等于微发光二极管2上的厚度，使得所述封装层3在各个微发光二极管2的间隔处形成凹槽，所述量子点层4顺着所述封装层3形成，其在各个微发光二极管2的间隔处也形成凹槽。\n\n[0034]可选地，所述多个微发光二极管2包括：红色微发光二极管、绿色微发光二极管、及蓝色微发光二极管。所述量子点层4包括：设于各个红色微发光二极管上方的红色量子点区、设于各个绿色微发光二极管上方的绿色量子点区、及设于各个蓝色微发光二极管上方的蓝色量子点区。也即所述量子点层4中各个区域的发光颜色对应其下方的微发光二极管2的发光颜色形成。\n\n[0035]值得一提的是，通过在封装层3上增设量子点层4，利用微发光二极管2发出的短波长光激发量子点层4发光，从而使微发光二极管2和量子点层4共同组成微发光二极管显示面板的基本显示单元，相比于仅采用微发光二极管作为基本显示单元的现有技术，能够扩大微发光二极管显示面板的色域，提升微发光二极管显示面板的显示品质。\n\n[0036]具体地，所述量子点层4所使用的量子点材料的结构包括发光核(例如绿色量子点材料可包括磷化铟(InP)、及硫化硒化镉(Cd2SSe)等，红色量子点材料可包括硒化镉(CdSe)、及砷化铟(InAs)等)、无机保护壳层(材料可选择硫化镉(CdS)、硒化锌(ZnSe)、硫化锌(ZnS)、及氧化锌(ZnO)等材料中的一种或多种组合)、以及表面配体(材料可选择R-COOH、R-NH2、或R-SH，其中R为12～20个碳原子的直链烷烃或烯烃分子)。\n\n[0037]请参阅图3，本发明还提供一种微发光二极管显示面板的制作方法，包括如下步骤：\n\n[0038]步骤1、提供一基板1，在所述基板1上形成阵列排布的多个微发光二极管2。\n\n[0039]具体地，所述步骤1具体包括：首先提供一原生基板，在所述原生基板上生成多个微发光二极管2，再通过微转印的方法将所述多个微发光二极管2转印到基板1上；所述原生基板为蓝宝石类基板；所述基板1为柔性基板、或刚性基板。所述基板1在转印前预先形成有电路图案，以驱动所述多个微发光二极管2发光，所述微发光二极管2可选择基于氮化镓的发光二极管，所述基板1为硅基板。\n\n[0040]步骤2、在所述多个微发光二极管2上覆盖透明的封装层3，对所述多个微发光二极管2进行封装。\n\n[0041]具体地，所述封装层3的作用为保护微发光二极管2，防止水汽侵入，并且需要具备良好耐热性、绝缘性和成膜稳定性，可选的材料包括但不限于：各类型聚对二甲苯、或有机树脂。所述封装层3的可通过旋涂工艺形成，厚度在50nm至0.5mm之间。\n\n[0042]步骤3、在所述封装层3上形成量子点层4。\n\n[0043]可选地，如图1所示，在本发明的第一实施例中，所述封装层3在各个微发光二极管2的间隔处的厚度大于微发光二极管2上的厚度，使得封装层3上表面为一平整表面，所述量子点层4的上表面也为一平整表面。如图2所示，在本发明的第二实施例中，所述封装层3在各个微发光二极管2的间隔处的厚度等于微发光二极管2上的厚度，使得所述封装层3在各个微发光二极管2的间隔处形成凹槽，所述量子点层4顺着所述封装层3形成，其在各个微发光二极管2的间隔处也形成凹槽。\n\n[0044]可选地，所述多个微发光二极管2包括：红色微发光二极管、绿色微发光二极管、及蓝色微发光二极管。所述量子点层4包括：设于各个红色微发光二极管上方的红色量子点区、设于各个绿色微发光二极管上方的绿色量子点区、及设于各个蓝色微发光二极管上方的蓝色量子点区。也即所述量子点层4中各个区域的发光颜色对应其下方的微发光二极管2的发光颜色形成。\n\n[0045]值得一提的是，通过在封装层3上增设量子点层4，利用微发光二极管2发出的短波长光激发量子点层4发光，从而使微发光二极管2和量子点层4共同组成微发光二极管显示面板的基本显示单元，相比于仅采用微发光二极管作为基本显示单元的现有技术，能够扩大微发光二极管显示面板的色域，提升微发光二极管显示面板的显示品质。\n\n[0046]综上所述，本发明提供了一种微发光二极管显示面板，其包括：基板、设于所述基板上的阵列排布的多个微发光二极管、覆盖所述多个微发光二极管的透明的封装层、以及设于所述封装层上的量子点层，通过在封装层上增设量子点层，利用微发光二极管发出的短波长光激发量子点层发光，从而使微发光二极管和量子点层共同组成微发光二极管显示面板的基本显示单元，能够扩大微发光二极管显示面板的色域，提升微发光二极管显示面板的显示品质。本发明还提供一种微发光二极管显示面板的制作方法，能够扩大微发光二极管显示面板的色域，提升微发光二极管显示面板的显示品质。\n\n[0047]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管显示面板及其制作方法。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但Micro LED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]由于晶格匹配的原因，微发光二极管器件必须先在蓝宝石类的基板上通过分子束外延的方法生长出来，而做成显示面板，还必须要把微发光二极管器件从蓝宝石类的基板上转移到用于形成显示面板的接收基板上，微转印(Micro Transfer Printing)就是一种将生长在蓝宝石类基板上的微发光二极管器件转移到接收基板上的技术，具体为，首先通过激光剥离技术(Laser lift-off，LLO)将微发光二极管裸芯片(bare chip)从蓝宝石类基板上分离开，随后使用一个图案化的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)传送头将微发光二极管裸芯片从蓝宝石类基板吸附起来，并将PDMS传送头与接收基板进行对位，随后将PDMS传送头所吸附的微发光二极管裸芯片贴附到接收基板上预设的位置，再剥离PDMS传送头，即可完成微发光二极管裸芯片的转移，形成微发光二极管阵列基板，进一步地，所述接收基板是已经预先制备完成电路图案的硅基板，其可以为柔性也可以为刚性。\n\n[0005]由于仅仅利用微发光二极管作为基本显示单元的微发光二极管显示器的色域很窄，显示效果较差，因此，为了优化微发光二极管显示器的显示效果，需要对其色域进行拓宽。\n\n发明内容\n\n[0006]本发明的目的在于提供一种微发光二极管显示面板，能够扩大微发光二极管显示面板的色域，提升微发光二极管显示面板的画质。\n\n[0007]本发明的目的还在于提供一种微发光二极管显示面板的制作方法，能够扩大微发光二极管显示面板的色域，提升微发光二极管显示面板的画质。\n\n[0008]为实现上述目的，本发明提供了一种微发光二极管显示面板，包括：基板、设于所述基板上的阵列排布的多个微发光二极管、覆盖所述多个微发光二极管的透明的封装层、以及设于所述封装层上的量子点层。\n\n[0009]所述基板为柔性基板、或刚性基板。\n\n[0010]所述封装层的材料为：聚对二甲苯、或有机树脂。\n\n[0011]所述多个微发光二极管包括：红色微发光二极管、绿色微发光二极管、及蓝色微发光二极管。\n\n[0012]所述量子点层包括：设于各个红色微发光二极管上方的红色量子点区、设于各个绿色微发光二极管上方的绿色量子点区、及设于各个蓝色微发光二极管上方的蓝色量子点区。\n\n[0013]本发明还提供一种微发光二极管显示面板的制作方法，包括如下步骤：\n\n[0014]步骤1、提供一基板，在所述基板上形成阵列排布的多个微发光二极管；\n\n[0015]步骤2、在所述多个微发光二极管上覆盖透明的封装层，对所述多个微发光二极管进行封装；\n\n[0016]步骤3、在所述封装层上形成量子点层。\n\n[0017]所述步骤1具体包括：首先提供一原生基板，在所述原生基板上生成多个微发光二极管，再通过微转印的方法将所述多个微发光二极管转印到基板上；\n\n[0018]所述原生基板为蓝宝石类基板；\n\n[0019]所述基板为柔性基板、或刚性基板。\n\n[0020]所述步骤2中通过旋涂的方法在所述多个微发光二极管上覆盖封装层；\n\n[0021]所述封装层的材料为：聚对二甲苯、或有机树脂。\n\n[0022]所述多个微发光二极管包括：红色微发光二极管、绿色微发光二极管、及蓝色微发光二极管。\n\n[0023]所述量子点层包括：设于各个红色微发光二极管上方的红色量子点区、设于各个绿色微发光二极管上方的绿色量子点区、及设于各个蓝色微发光二极管上方的蓝色量子点区。\n\n[0024]本发明的有益效果：本发明提供了一种微发光二极管显示面板，其包括：基板、设于所述基板上的阵列排布的多个微发光二极管、覆盖所述多个微发光二极管的透明的封装层、以及设于所述封装层上的量子点层，通过在封装层上增设量子点层，利用微发光二极管发出的短波长光激发量子点层发光，从而使微发光二极管和量子点层共同组成微发光二极管显示面板的基本显示单元，能够扩大微发光二极管显示面板的色域，提升微发光二极管显示面板的显示品质。本发明还提供一种微发光二极管显示面板的制作方法，能够扩大微发光二极管显示面板的色域，提升微发光二极管显示面板的显示品质。\n\n附图说明\n\n[0025]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0026]附图中，\n\n[0027]图1为本发明的微发光二极管显示面板的第一实施例的结构示意图；\n\n[0028]图2为本发明的微发光二极管显示面板的第二实施例的结构示意图；\n\n[0029]图3为本发明的微发光二极管显示面板的制作方法的流程图。\n\n具体实施方式\n\n[0030]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0031]请参阅图1或图2，本发明首先提供一种微发光二极管显示面板，包括：基板1、设于所述基板1上的阵列排布的多个微发光二极管2、覆盖所述多个微发光二极管2的透明的封装层3、以及设于所述封装层3上的量子点层4。\n\n[0032]具体地，所述基板1为柔性基板、或刚性基板，所述多个微发光二极管2通过微转印的方法由蓝宝石类的原生基板上转印到基板1上，所述基板1在转印前预先形成有电路图案，以驱动所述多个微发光二极管2发光，所述微发光二极管2可选择基于氮化镓(GaN)的发光二极管，所述基板1为硅基板。\n\n[0033]进一步地，所述封装层3的作用为保护微发光二极管2，防止水汽侵入，并且需要具备良好耐热性、绝缘性和成膜稳定性，可选的材料包括但不限于各类型聚对二甲苯、或有机树脂。所述封装层3的可通过旋涂工艺形成，厚度在50nm至0.5mm之间。可选地，如图1所示，在本发明的第一实施例中，所述封装层3在各个微发光二极管2的间隔处的厚度大于微发光二极管2上的厚度，使得封装层3上表面为一平整表面，所述量子点层4的上表面也为一平整表面。如图2所示，在本发明的第二实施例中，所述封装层3在各个微发光二极管2的间隔处的厚度等于微发光二极管2上的厚度，使得所述封装层3在各个微发光二极管2的间隔处形成凹槽，所述量子点层4顺着所述封装层3形成，其在各个微发光二极管2的间隔处也形成凹槽。\n\n[0034]可选地，所述多个微发光二极管2包括：红色微发光二极管、绿色微发光二极管、及蓝色微发光二极管。所述量子点层4包括：设于各个红色微发光二极管上方的红色量子点区、设于各个绿色微发光二极管上方的绿色量子点区、及设于各个蓝色微发光二极管上方的蓝色量子点区。也即所述量子点层4中各个区域的发光颜色对应其下方的微发光二极管2的发光颜色形成。\n\n[0035]值得一提的是，通过在封装层3上增设量子点层4，利用微发光二极管2发出的短波长光激发量子点层4发光，从而使微发光二极管2和量子点层4共同组成微发光二极管显示面板的基本显示单元，相比于仅采用微发光二极管作为基本显示单元的现有技术，能够扩大微发光二极管显示面板的色域，提升微发光二极管显示面板的显示品质。\n\n[0036]具体地，所述量子点层4所使用的量子点材料的结构包括发光核(例如绿色量子点材料可包括磷化铟(InP)、及硫化硒化镉(Cd2SSe)等，红色量子点材料可包括硒化镉(CdSe)、及砷化铟(InAs)等)、无机保护壳层(材料可选择硫化镉(CdS)、硒化锌(ZnSe)、硫化锌(ZnS)、及氧化锌(ZnO)等材料中的一种或多种组合)、以及表面配体(材料可选择R-COOH、R-NH2、或R-SH，其中R为12～20个碳原子的直链烷烃或烯烃分子)。\n\n[0037]请参阅图3，本发明还提供一种微发光二极管显示面板的制作方法，包括如下步骤：\n\n[0038]步骤1、提供一基板1，在所述基板1上形成阵列排布的多个微发光二极管2。\n\n[0039]具体地，所述步骤1具体包括：首先提供一原生基板，在所述原生基板上生成多个微发光二极管2，再通过微转印的方法将所述多个微发光二极管2转印到基板1上；所述原生基板为蓝宝石类基板；所述基板1为柔性基板、或刚性基板。所述基板1在转印前预先形成有电路图案，以驱动所述多个微发光二极管2发光，所述微发光二极管2可选择基于氮化镓的发光二极管，所述基板1为硅基板。\n\n[0040]步骤2、在所述多个微发光二极管2上覆盖透明的封装层3，对所述多个微发光二极管2进行封装。\n\n[0041]具体地，所述封装层3的作用为保护微发光二极管2，防止水汽侵入，并且需要具备良好耐热性、绝缘性和成膜稳定性，可选的材料包括但不限于：各类型聚对二甲苯、或有机树脂。所述封装层3的可通过旋涂工艺形成，厚度在50nm至0.5mm之间。\n\n[0042]步骤3、在所述封装层3上形成量子点层4。\n\n[0043]可选地，如图1所示，在本发明的第一实施例中，所述封装层3在各个微发光二极管2的间隔处的厚度大于微发光二极管2上的厚度，使得封装层3上表面为一平整表面，所述量子点层4的上表面也为一平整表面。如图2所示，在本发明的第二实施例中，所述封装层3在各个微发光二极管2的间隔处的厚度等于微发光二极管2上的厚度，使得所述封装层3在各个微发光二极管2的间隔处形成凹槽，所述量子点层4顺着所述封装层3形成，其在各个微发光二极管2的间隔处也形成凹槽。\n\n[0044]可选地，所述多个微发光二极管2包括：红色微发光二极管、绿色微发光二极管、及蓝色微发光二极管。所述量子点层4包括：设于各个红色微发光二极管上方的红色量子点区、设于各个绿色微发光二极管上方的绿色量子点区、及设于各个蓝色微发光二极管上方的蓝色量子点区。也即所述量子点层4中各个区域的发光颜色对应其下方的微发光二极管2的发光颜色形成。\n\n[0045]值得一提的是，通过在封装层3上增设量子点层4，利用微发光二极管2发出的短波长光激发量子点层4发光，从而使微发光二极管2和量子点层4共同组成微发光二极管显示面板的基本显示单元，相比于仅采用微发光二极管作为基本显示单元的现有技术，能够扩大微发光二极管显示面板的色域，提升微发光二极管显示面板的显示品质。\n\n[0046]综上所述，本发明提供了一种微发光二极管显示面板，其包括：基板、设于所述基板上的阵列排布的多个微发光二极管、覆盖所述多个微发光二极管的透明的封装层、以及设于所述封装层上的量子点层，通过在封装层上增设量子点层，利用微发光二极管发出的短波长光激发量子点层发光，从而使微发光二极管和量子点层共同组成微发光二极管显示面板的基本显示单元，能够扩大微发光二极管显示面板的色域，提升微发光二极管显示面板的显示品质。本发明还提供一种微发光二极管显示面板的制作方法，能够扩大微发光二极管显示面板的色域，提升微发光二极管显示面板的显示品质。\n\n[0047]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10577, 23631, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管显示器。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED，μLED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，μLED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但μLED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]微转印(Micro Transfer Printing)技术是目前制备μLED显示装置的主流方法，具体制备过程为：首先在蓝宝石类基板生长出微发光二极管，然后通过激光剥离技术(Laser lift-off，LLO)将微发光二极管裸芯片(bare chip)从蓝宝石类基板上分离开，随后使用一个图案化的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)传送头将微发光二极管裸芯片从蓝宝石类基板吸附起来，并将PDMS传送头与接收基板进行对位，随后将PDMS传送头所吸附的微发光二极管裸芯片贴附到接收基板上预设的位置，再剥离PDMS传送头，即可完成将微发光二极管裸芯片转移到接收基板上，进而制得μLED显示装置。\n\n[0005]目前，蓝色微发光二极管和绿色微发光二极管的结构主要为蓝宝石基板的水平结构，而红色微发光二极管的结构主要为砷化镓(GaAs)基板的垂直结构，由于红色微发光二极管与蓝色微发光二极管或绿色微发光二极管在蓝宝石基板的生长方式存在区别，造成通过一般的倒装芯片(flip chip)技术来制备正负电极在同一向的红色微发光二极管存在困难。\n\n[0006]另外，由于仅仅利用微发光二极管作为基本显示单元的微发光二极管显示器的色域很窄，显示效果较差，因此，为了优化微发光二极管显示器的显示效果，需要对其色域进行拓宽。\n\n发明内容\n\n[0007]本发明的目的在于提供一种微发光二极管显示器，能够降低微发光二极管显示器制作难度，拓宽微发光二极管显示器的色域，增强微发光二极管显示器的显示效果。\n\n[0008]为实现上述目的，本发明首先提供一种微发光二极管显示器，包括：基板、以及设于所述基板上阵列排布的多个显示像素；\n\n[0009]每一个显示像素至少包括一红色子像素；\n\n[0010]所述红色子像素包括：设于所述基板上的至少一个白色微发光二极管、以及设于所述白色微发光二极管上的红色滤光层。\n\n[0011]每一个显示像素还包括一绿色子像素、以及一蓝色子像素；\n\n[0012]所述绿色子像素包括：设于所述基板上的至少一个白色微发光二极管、以及设于所述白色微发光二极管上的绿色滤光层；\n\n[0013]所述蓝色子像素包括：设于所述基板上的至少一个白色微发光二极管、以及设于所述白色微发光二极管上的蓝色滤光层。\n\n[0014]每一个显示像素还包括一绿色子像素、以及一蓝色子像素；\n\n[0015]所述绿色子像素包括：设于所述基板上的至少一个白色微发光二极管、以及设于所述白色微发光二极管上的绿色滤光层；\n\n[0016]所述蓝色子像素包括：设于所述基板上的至少一个蓝色微发光二极管。\n\n[0017]每一个显示像素还包括一绿色子像素、以及一蓝色子像素；\n\n[0018]所述绿色子像素包括：设于所述基板上的至少一个绿色微发光二极管；\n\n[0019]所述蓝色子像素包括：设于所述基板上的至少一个白色微发光二极管、以及设于所述白色微发光二极管上的蓝色滤光层。\n\n[0020]每一个显示像素还包括一绿色子像素、以及一蓝色子像素；\n\n[0021]所述绿色子像素包括：设于所述基板上的至少一个绿色微发光二极管；\n\n[0022]所述蓝色子像素包括：设于所述基板上的至少一个蓝色微发光二极管。\n\n[0023]所述红色滤光层中还设有红色光致发光材料。\n\n[0024]所述蓝色滤光层中还设有蓝色光致发光材料。\n\n[0025]所述绿色滤光层中还设有绿色光致发光材料。\n\n[0026]本发明还提供一种微发光二极管显示器，包括：基板、以及设于所述基板上阵列排布的多个显示像素；\n\n[0027]每一个显示像素至少包括一红色子像素；\n\n[0028]所述红色子像素包括：设于所述基板上的至少一个蓝色微发光二极管或至少一个绿色微发光二极管、以及设于所述蓝色微发光二极管或绿色微发光二极管上的红色光致发光层。\n\n[0029]每一个显示像素还包括一绿色子像素、以及一蓝色子像素；\n\n[0030]所述绿色子像素包括：设于所述基板上的至少一个绿色微发光二极管；\n\n[0031]所述蓝色子像素包括：设于所述基板上的至少一个蓝色微发光二极管。\n\n[0032]本发明的有益效果：本发明提供了一种微发光二极管显示器，所述微发光二极管显示器采用白色微发光二极管加上红色滤光层，或者绿色微发光二极管加上红色光致发光层，或者蓝色微发光二极管加上红色光致发光层的方法呈现红色子像素，不需要制作红色微发光二极管，降低了微发光二极管显示器的制作难度，同时通过在微发光二极管上增加滤光层，能够增强微发光二极管显示器的颜色纯度，拓宽微发光二极管显示器的色域，增强微发光二极管显示器的显示效果。\n\n附图说明\n\n[0033]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0034]附图中，\n\n[0035]图1为本发明的微发光二极管显示器的第一实施例的结构图；\n\n[0036]图2为本发明的微发光二极管显示器的第二实施例的结构图；\n\n[0037]图3为本发明的微发光二极管显示器的第三实施例的结构图；\n\n[0038]图4为本发明的微发光二极管显示器的第四实施例的结构图；\n\n[0039]图5为本发明的微发光二极管显示器的第五实施例的结构图；\n\n[0040]图6为本发明的微发光二极管显示器的第六实施例的结构图。\n\n具体实施方式\n\n[0041]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0042]本发明提供一种微发光二极管显示器，该微发光二极管显示器采用非红色微发光二极管(如白色、蓝色、及绿色微发光二极管)加上辅助层(如红色滤光层、及红色光致发光层)的方法呈现红色子像素，以避免在微发光二极管显示器中制作红色微发光二极管，降低微发光二极管显示器的制作难度。\n\n[0043]请参阅图1至图4，在本发明的第一至第四实施例中，所述微发光二极管显示器采用白色微发光二极管加上红色滤光层的方法呈现红色子像素，具体包括：基板1、以及设于所述基板1上阵列排布的多个显示像素2；\n\n[0044]每一个显示像素2至少包括一红色子像素21；\n\n[0045]所述红色子像素21包括：设于所述基板1上的至少一个白色微发光二极管211、以及设于所述白色微发光二极管211上的红色滤光层212。\n\n[0046]另外，每一个显示像素2还包括一绿色子像素22、以及一蓝色子像素23，也即每一个显示像素2均由一红色子像素21、一绿色子像素22、以及一蓝色子像素23组成，通过一红色子像素21、一绿色子像素22、以及一蓝色子像素23发出的红光、绿光、及蓝光三原色呈现彩色图像。\n\n[0047]具体地，所述基板1上还设有用于驱动微发光二极管发光的薄膜晶体管(ThinFilm Transistor，TFT)阵列，可选的，所述TFT阵列为非晶硅TFT阵列、或低温多晶硅TFT阵列等硅基TFT阵列、或者氧化铟镓锌薄膜晶体管阵列等氧化物TFT阵列。\n\n[0048]进一步地，请参阅图1，在本发明的第一实施例中，所述绿色子像素22包括：设于所述基板1上的至少一个白色微发光二极管211、以及设于所述白色微发光二极管211上的绿色滤光层222；所述蓝色子像素23包括：设于所述基板1上的至少一个白色微发光二极管211、以及设于所述白色微发光二极管211上的蓝色滤光层232。也即在本发明的第一实施例中红色、绿色、及蓝色子像素21、22、23均由白色微发光二极管211均由白色微发光二极管211加上滤光层实现，相比于于仅仅利用各种颜色微发光二极管来呈现相应颜色的子像素的微发光二极管显示器其色域更宽，显示效果更好。\n\n[0049]请参阅图2，图2为本发明的第二实施例，该第二实施例中与第一实施例的区别在于，所述蓝色子像素23包括：设于所述基板1上的至少一个蓝色微发光二极管231，也就是说在第二实施例中，蓝色子像素23是通过蓝色微发光二极管231直接发出蓝光来呈现的，没有滤光层。其余均与第一实施例相同，此处不再赘述。\n\n[0050]请参阅图3，图3为本发明的第三实施例，该第三实施例中与第一实施例的区别在于，所述绿色子像素22包括：设于所述基板1上的至少一个绿色微发光二极管221，也就是说在第三实施例中，绿色子像素22是通过绿色微发光二极管221直接发出绿光来呈现的，其没有滤光层。其余均与第一实施例相同，此处不再赘述。\n\n[0051]请参阅图4，图4为本发明的第四实施例，该第四实施例中与第二实施例的区别在于，所述绿色子像素22包括：设于所述基板1上的至少一个绿色微发光二极管221，也就是说在第四实施例中，绿色子像素22是通过绿色微发光二极管221直接发出绿光来呈现的，其没有滤光层，且其蓝色子像素23也是通过蓝色微发光二极管231直接发出蓝光来呈现的，没有滤光层。其余均与第二实施例相同，此处不再赘述。\n\n[0052]需要说明的是，在本发明的第一至第四实施例中，根据设计需要，各个颜色的滤光层中均可以增加量子点材料等光致发光材料，以进一步拓宽微发光二极管显示器的色域。所述光致发光材料的发光颜色对应所述滤光层的颜色，例如所述红色滤光层212中还设有红色光致发光材料、所述蓝色滤光层232中设有蓝色光致发光材料、所述绿色滤光层222中设有绿色光致发光材料。\n\n[0053]请参阅图5至图6，在本发明的第五至第六实施例中，所述微发光二极管显示器采用蓝色或绿色微发光二极管加上红色光致发光层的方法呈现红色子像素，具体包括：包括：基板1、以及设于所述基板1上阵列排布的多个显示像素2；每一个显示像素2至少包括一红色子像素21；所述红色子像素21包括：设于所述基板1上的至少一个蓝色微发光二极管231或至少一个绿色微发光二极管221、以及设于所述蓝色微发光二极管231或绿色微发光二极管221上的红色光致发光层214。\n\n[0054]另外，每一个显示像素2还包括一绿色子像素22、以及一蓝色子像素23；\n\n[0055]所述绿色子像素22包括：设于所述基板1上的至少一个绿色微发光二极管221；\n\n[0056]所述蓝色子像素23包括：设于所述基板1上的至少一个蓝色微发光二极管231。\n\n[0057]具体地，所述基板1上还设有用于驱动微发光二极管发光的薄膜晶体管(ThinFilm Transistor，TFT)阵列，可选的，所述TFT阵列为非晶硅TFT阵列、或低温多晶硅TFT阵列等硅基TFT阵列、或者氧化铟镓锌薄膜晶体管阵列等氧化物TFT阵列。\n\n[0058]具体地，请参阅图5，图5为本发明的第五实施例，在该第五实施例中采用绿色微发光二极管221加上红色光致发光层214的方法呈现红色子像素21。相应的，请参阅图6，图6为本发明的第六实施例，在该第六实施例中采用蓝色微发光二极管231加上红色光致发光层214的方法呈现红色子像素21。通过绿色微发光二极管221、或蓝色微发光二极管231发出的短波光激发红色光致发光层214发出红光，进而呈现红色子像素21。\n\n[0059]值得一提的是，上述白色微发光二极管211、绿色微发光二极管221、及蓝色微发光二极管231均可以通过微转印的方法制备，其结构具体包括：蓝宝石衬底、设于蓝宝石衬底上的N型半导体层、设于所述N型半导体层上的多量子肼层、设于所述多量子肼层上的P型半导体层、设于所述P型半导体层上的接触层、设于所述接触上的电流扩散层、设于所述电流扩散层上的第一电极、以及包围所述第一电极的绝缘层、以及设于延伸至发光区域外的所述N型半导体层上的第二电极，也即所述第一电极和第二电极位于同一个平面，通过微转印可以将所述微发光二极管倒装至接收基板上。其中，第一电极为镍和金的合金材料，也可替换为钯和金的合金材料，所述N型半导体层和P型半导体层的材料可选择是氮化镓(GaN)、氮化铟镓(InGaN)、硒化锌(ZnSe)、磷化镓(GaP)、或磷化铝铟镓(AlGaInP)。\n\n[0060]综上所述，本发明提供了一种微发光二极管显示器，所述微发光二极管显示器采用白色微发光二极管加上红色滤光层，或者绿色微发光二极管加上红色光致发光层，或者蓝色微发光二极管加上红色光致发光层的方法呈现红色子像素，不需要制作红色微发光二极管，降低了微发光二极管显示器的制作难度，同时通过在微发光二极管上增加滤光层，能够增强微发光二极管显示器的颜色纯度，拓宽微发光二极管显示器的色域，增强微发光二极管显示器的显示效果。\n\n[0061]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管显示器。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED，μLED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，μLED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但μLED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]微转印(Micro Transfer Printing)技术是目前制备μLED显示装置的主流方法，具体制备过程为：首先在蓝宝石类基板生长出微发光二极管，然后通过激光剥离技术(Laser lift-off，LLO)将微发光二极管裸芯片(bare chip)从蓝宝石类基板上分离开，随后使用一个图案化的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)传送头将微发光二极管裸芯片从蓝宝石类基板吸附起来，并将PDMS传送头与接收基板进行对位，随后将PDMS传送头所吸附的微发光二极管裸芯片贴附到接收基板上预设的位置，再剥离PDMS传送头，即可完成将微发光二极管裸芯片转移到接收基板上，进而制得μLED显示装置。\n\n[0005]目前，蓝色微发光二极管和绿色微发光二极管的结构主要为蓝宝石基板的水平结构，而红色微发光二极管的结构主要为砷化镓(GaAs)基板的垂直结构，由于红色微发光二极管与蓝色微发光二极管或绿色微发光二极管在蓝宝石基板的生长方式存在区别，造成通过一般的倒装芯片(flip chip)技术来制备正负电极在同一向的红色微发光二极管存在困难。\n\n[0006]另外，由于仅仅利用微发光二极管作为基本显示单元的微发光二极管显示器的色域很窄，显示效果较差，因此，为了优化微发光二极管显示器的显示效果，需要对其色域进行拓宽。\n\n发明内容\n\n[0007]本发明的目的在于提供一种微发光二极管显示器，能够降低微发光二极管显示器制作难度，拓宽微发光二极管显示器的色域，增强微发光二极管显示器的显示效果。\n\n[0008]为实现上述目的，本发明首先提供一种微发光二极管显示器，包括：基板、以及设于所述基板上阵列排布的多个显示像素；\n\n[0009]每一个显示像素至少包括一红色子像素；\n\n[0010]所述红色子像素包括：设于所述基板上的至少一个白色微发光二极管、以及设于所述白色微发光二极管上的红色滤光层。\n\n[0011]每一个显示像素还包括一绿色子像素、以及一蓝色子像素；\n\n[0012]所述绿色子像素包括：设于所述基板上的至少一个白色微发光二极管、以及设于所述白色微发光二极管上的绿色滤光层；\n\n[0013]所述蓝色子像素包括：设于所述基板上的至少一个白色微发光二极管、以及设于所述白色微发光二极管上的蓝色滤光层。\n\n[0014]每一个显示像素还包括一绿色子像素、以及一蓝色子像素；\n\n[0015]所述绿色子像素包括：设于所述基板上的至少一个白色微发光二极管、以及设于所述白色微发光二极管上的绿色滤光层；\n\n[0016]所述蓝色子像素包括：设于所述基板上的至少一个蓝色微发光二极管。\n\n[0017]每一个显示像素还包括一绿色子像素、以及一蓝色子像素；\n\n[0018]所述绿色子像素包括：设于所述基板上的至少一个绿色微发光二极管；\n\n[0019]所述蓝色子像素包括：设于所述基板上的至少一个白色微发光二极管、以及设于所述白色微发光二极管上的蓝色滤光层。\n\n[0020]每一个显示像素还包括一绿色子像素、以及一蓝色子像素；\n\n[0021]所述绿色子像素包括：设于所述基板上的至少一个绿色微发光二极管；\n\n[0022]所述蓝色子像素包括：设于所述基板上的至少一个蓝色微发光二极管。\n\n[0023]所述红色滤光层中还设有红色光致发光材料。\n\n[0024]所述蓝色滤光层中还设有蓝色光致发光材料。\n\n[0025]所述绿色滤光层中还设有绿色光致发光材料。\n\n[0026]本发明还提供一种微发光二极管显示器，包括：基板、以及设于所述基板上阵列排布的多个显示像素；\n\n[0027]每一个显示像素至少包括一红色子像素；\n\n[0028]所述红色子像素包括：设于所述基板上的至少一个蓝色微发光二极管或至少一个绿色微发光二极管、以及设于所述蓝色微发光二极管或绿色微发光二极管上的红色光致发光层。\n\n[0029]每一个显示像素还包括一绿色子像素、以及一蓝色子像素；\n\n[0030]所述绿色子像素包括：设于所述基板上的至少一个绿色微发光二极管；\n\n[0031]所述蓝色子像素包括：设于所述基板上的至少一个蓝色微发光二极管。\n\n[0032]本发明的有益效果：本发明提供了一种微发光二极管显示器，所述微发光二极管显示器采用白色微发光二极管加上红色滤光层，或者绿色微发光二极管加上红色光致发光层，或者蓝色微发光二极管加上红色光致发光层的方法呈现红色子像素，不需要制作红色微发光二极管，降低了微发光二极管显示器的制作难度，同时通过在微发光二极管上增加滤光层，能够增强微发光二极管显示器的颜色纯度，拓宽微发光二极管显示器的色域，增强微发光二极管显示器的显示效果。\n\n附图说明\n\n[0033]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0034]附图中，\n\n[0035]图1为本发明的微发光二极管显示器的第一实施例的结构图；\n\n[0036]图2为本发明的微发光二极管显示器的第二实施例的结构图；\n\n[0037]图3为本发明的微发光二极管显示器的第三实施例的结构图；\n\n[0038]图4为本发明的微发光二极管显示器的第四实施例的结构图；\n\n[0039]图5为本发明的微发光二极管显示器的第五实施例的结构图；\n\n[0040]图6为本发明的微发光二极管显示器的第六实施例的结构图。\n\n具体实施方式\n\n[0041]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0042]本发明提供一种微发光二极管显示器，该微发光二极管显示器采用非红色微发光二极管(如白色、蓝色、及绿色微发光二极管)加上辅助层(如红色滤光层、及红色光致发光层)的方法呈现红色子像素，以避免在微发光二极管显示器中制作红色微发光二极管，降低微发光二极管显示器的制作难度。\n\n[0043]请参阅图1至图4，在本发明的第一至第四实施例中，所述微发光二极管显示器采用白色微发光二极管加上红色滤光层的方法呈现红色子像素，具体包括：基板1、以及设于所述基板1上阵列排布的多个显示像素2；\n\n[0044]每一个显示像素2至少包括一红色子像素21；\n\n[0045]所述红色子像素21包括：设于所述基板1上的至少一个白色微发光二极管211、以及设于所述白色微发光二极管211上的红色滤光层212。\n\n[0046]另外，每一个显示像素2还包括一绿色子像素22、以及一蓝色子像素23，也即每一个显示像素2均由一红色子像素21、一绿色子像素22、以及一蓝色子像素23组成，通过一红色子像素21、一绿色子像素22、以及一蓝色子像素23发出的红光、绿光、及蓝光三原色呈现彩色图像。\n\n[0047]具体地，所述基板1上还设有用于驱动微发光二极管发光的薄膜晶体管(ThinFilm Transistor，TFT)阵列，可选的，所述TFT阵列为非晶硅TFT阵列、或低温多晶硅TFT阵列等硅基TFT阵列、或者氧化铟镓锌薄膜晶体管阵列等氧化物TFT阵列。\n\n[0048]进一步地，请参阅图1，在本发明的第一实施例中，所述绿色子像素22包括：设于所述基板1上的至少一个白色微发光二极管211、以及设于所述白色微发光二极管211上的绿色滤光层222；所述蓝色子像素23包括：设于所述基板1上的至少一个白色微发光二极管211、以及设于所述白色微发光二极管211上的蓝色滤光层232。也即在本发明的第一实施例中红色、绿色、及蓝色子像素21、22、23均由白色微发光二极管211均由白色微发光二极管211加上滤光层实现，相比于于仅仅利用各种颜色微发光二极管来呈现相应颜色的子像素的微发光二极管显示器其色域更宽，显示效果更好。\n\n[0049]请参阅图2，图2为本发明的第二实施例，该第二实施例中与第一实施例的区别在于，所述蓝色子像素23包括：设于所述基板1上的至少一个蓝色微发光二极管231，也就是说在第二实施例中，蓝色子像素23是通过蓝色微发光二极管231直接发出蓝光来呈现的，没有滤光层。其余均与第一实施例相同，此处不再赘述。\n\n[0050]请参阅图3，图3为本发明的第三实施例，该第三实施例中与第一实施例的区别在于，所述绿色子像素22包括：设于所述基板1上的至少一个绿色微发光二极管221，也就是说在第三实施例中，绿色子像素22是通过绿色微发光二极管221直接发出绿光来呈现的，其没有滤光层。其余均与第一实施例相同，此处不再赘述。\n\n[0051]请参阅图4，图4为本发明的第四实施例，该第四实施例中与第二实施例的区别在于，所述绿色子像素22包括：设于所述基板1上的至少一个绿色微发光二极管221，也就是说在第四实施例中，绿色子像素22是通过绿色微发光二极管221直接发出绿光来呈现的，其没有滤光层，且其蓝色子像素23也是通过蓝色微发光二极管231直接发出蓝光来呈现的，没有滤光层。其余均与第二实施例相同，此处不再赘述。\n\n[0052]需要说明的是，在本发明的第一至第四实施例中，根据设计需要，各个颜色的滤光层中均可以增加量子点材料等光致发光材料，以进一步拓宽微发光二极管显示器的色域。所述光致发光材料的发光颜色对应所述滤光层的颜色，例如所述红色滤光层212中还设有红色光致发光材料、所述蓝色滤光层232中设有蓝色光致发光材料、所述绿色滤光层222中设有绿色光致发光材料。\n\n[0053]请参阅图5至图6，在本发明的第五至第六实施例中，所述微发光二极管显示器采用蓝色或绿色微发光二极管加上红色光致发光层的方法呈现红色子像素，具体包括：包括：基板1、以及设于所述基板1上阵列排布的多个显示像素2；每一个显示像素2至少包括一红色子像素21；所述红色子像素21包括：设于所述基板1上的至少一个蓝色微发光二极管231或至少一个绿色微发光二极管221、以及设于所述蓝色微发光二极管231或绿色微发光二极管221上的红色光致发光层214。\n\n[0054]另外，每一个显示像素2还包括一绿色子像素22、以及一蓝色子像素23；\n\n[0055]所述绿色子像素22包括：设于所述基板1上的至少一个绿色微发光二极管221；\n\n[0056]所述蓝色子像素23包括：设于所述基板1上的至少一个蓝色微发光二极管231。\n\n[0057]具体地，所述基板1上还设有用于驱动微发光二极管发光的薄膜晶体管(ThinFilm Transistor，TFT)阵列，可选的，所述TFT阵列为非晶硅TFT阵列、或低温多晶硅TFT阵列等硅基TFT阵列、或者氧化铟镓锌薄膜晶体管阵列等氧化物TFT阵列。\n\n[0058]具体地，请参阅图5，图5为本发明的第五实施例，在该第五实施例中采用绿色微发光二极管221加上红色光致发光层214的方法呈现红色子像素21。相应的，请参阅图6，图6为本发明的第六实施例，在该第六实施例中采用蓝色微发光二极管231加上红色光致发光层214的方法呈现红色子像素21。通过绿色微发光二极管221、或蓝色微发光二极管231发出的短波光激发红色光致发光层214发出红光，进而呈现红色子像素21。\n\n[0059]值得一提的是，上述白色微发光二极管211、绿色微发光二极管221、及蓝色微发光二极管231均可以通过微转印的方法制备，其结构具体包括：蓝宝石衬底、设于蓝宝石衬底上的N型半导体层、设于所述N型半导体层上的多量子肼层、设于所述多量子肼层上的P型半导体层、设于所述P型半导体层上的接触层、设于所述接触上的电流扩散层、设于所述电流扩散层上的第一电极、以及包围所述第一电极的绝缘层、以及设于延伸至发光区域外的所述N型半导体层上的第二电极，也即所述第一电极和第二电极位于同一个平面，通过微转印可以将所述微发光二极管倒装至接收基板上。其中，第一电极为镍和金的合金材料，也可替换为钯和金的合金材料，所述N型半导体层和P型半导体层的材料可选择是氮化镓(GaN)、氮化铟镓(InGaN)、硒化锌(ZnSe)、磷化镓(GaP)、或磷化铝铟镓(AlGaInP)。\n\n[0060]综上所述，本发明提供了一种微发光二极管显示器，所述微发光二极管显示器采用白色微发光二极管加上红色滤光层，或者绿色微发光二极管加上红色光致发光层，或者蓝色微发光二极管加上红色光致发光层的方法呈现红色子像素，不需要制作红色微发光二极管，降低了微发光二极管显示器的制作难度，同时通过在微发光二极管上增加滤光层，能够增强微发光二极管显示器的颜色纯度，拓宽微发光二极管显示器的色域，增强微发光二极管显示器的显示效果。\n\n[0061]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10578, 23632, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种在曲面基板上转印微发光二极管的方法及曲面微发光二极管显示面板的制作方法。\n\n背景技术\n\n[0002]微发光二极管(Micro LED)是一种尺寸在几微米到几百微米之间的器件，由于其较普通LED的尺寸要小很多，从而使得单一的LED作为像素(Pixel)用于显示成为可能，Micro LED显示器便是一种以高密度的Micro LED阵列作为显示像素阵列来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但Micro LED显示器相比于OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0003]由于晶格匹配的原因，Micro LED器件必须先在蓝宝石类的供给基板上通过分子束外延的方法生长出来，随后通过激光剥离(Laser lift-off，LLO)技术将微发光二极管裸芯片(bare chip)从供给基板上分离开，然后通过微转印(Micro Transfer Print，NTP)技术将其转移到已经预先制备完成电路图案的接收基板上，形成Micro LED阵列，进而做成Micro LED显示面板。其中，微转印的基本原理大致为：使用具有图案化的传送头(Transferhead)，例如具有凸起结构的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)类传送头，通过具有粘性的PDMS传送层(Transfer layer)将Micro LED bare chip从供给基板吸附起来，然后将PDMS传送头与接收基板进行对位，随后将PDMS传送头所吸附的Micro LED barechip贴附到接收基板预设的位置上，再将PDMS传送头从接收基板上剥离，即可完成MicroLED bare chip的转移，形成Micro LED阵列。\n\n[0004]目前，来自爱尔兰的X-celeprint、美国德州大学等都曾发表过有关Micro LED显示器的研究成果。苹果公司于2014年正式收购具有Micro LED技术的LuxVue后，引发业界开始关注于Micro LED的技术优势，作为一家掌握Micro LED Transfer Printing的高技术公司，LuxVue与X-Celeprint所使用的微转移技术差别较大。X-Celeprint主要利用PDMS等膜层结构的吸附力进行转移动作，而LuxVue通过在传送头的凸起上通电，利用静电力来吸附Micro LED等器件。\n\n[0005]另外，随着显示技术的发展，人们对消费性电子产品的要求已经不单单局限于功能性，曲面显示器相较于平面显示器，设计新颖，视觉体验效果更佳；如果将Micro LED显示技术与曲面显示技术进行结合，那么首先所要解决的问题便是如何将Micro LED转移在接收基板的弧面或球面等其他曲面上而制备出显示阵列。\n\n发明内容\n\n[0006]本发明的目的在于提供一种在曲面基板上转印微发光二极管的方法，通过两次微转印制程将微发光二极管转印到曲面基板上，可用于制作曲面微发光二极管显示面板，从而达成曲面显示效果。\n\n[0007]本发明的目的还在于提供一种曲面微发光二极管显示面板的制作方法，采用上述的在曲面基板上转印微发光二极管的方法形成微发光二极管显示阵列，从而制得曲面微发光二极管显示面板。\n\n[0008]为实现上述目的，本发明提供了一种在曲面基板上转印微发光二极管的方法，包括如下步骤：\n\n[0009]步骤1、提供第一传送头、载体基板、及中转基板，所述载体基板上具有数个微发光二极管，利用所述第一传送头进行第一次微转印制程，在第一次微转印制程中，所述第一传送头拾取所述载体基板上的微发光二极管，然后将所拾取的所述微发光二极管放置于中转基板上，在中转基板上形成第一微发光二极管阵列；\n\n[0010]步骤2、提供第二传送头、及曲面基板，所述第二传送头具有柔性，利用所述第二传送头进行第二次微转印制程，在第二次微转印制程中，所述第二传送头拾取所述中转基板上的微发光二极管，然后载有微发光二极管的第二传送头随所述曲面基板的形状发生形变而贴附于所述曲面基板上，将所拾取的微发光二极管放置于曲面基板上，在曲面基板上形成第二微发光二极管阵列。\n\n[0011]所述第一传送头上设有电极，所述第一传送头通过静电力对所述微发光二极管进行微转印。\n\n[0012]所述第一传送头为PDMS传送头，具有PDMS层，所述第一传送头利用PDMS层对所述微发光二极管的吸附力进行微转印。\n\n[0013]所述第二传送头包括柔性PDMS膜，所述柔性PDMS膜具有吸附面，所述第二传送头通过所述柔性PDMS膜的吸附面拾取所述微发光二极管，所述柔性PDMS膜的厚度为20μm-1000μm。\n\n[0014]所述柔性PDMS膜的吸附面为平面，所述第二微发光二极管阵列所构成的图案结构与所述第一微发光二极管阵列所构成的图案结构相同。\n\n[0015]所述柔性PDMS膜的吸附面具有凸起结构，所述第二传送头通过柔性PDMS膜的凸起结构拾取微发光二极管。\n\n[0016]所述第二传送头还包括用于承载所述柔性PDMS膜的柔性衬底。\n\n[0017]所述第一传送头为PDMS传送头，包括衬底基板、及形成于所述衬底基板上的PDMS膜；\n\n[0018]所述步骤2中提供的第二传送头由所述第一传送头制得，具体制作过程为：将所述第一传送头的衬底基板通过化学方法溶解掉，剩余的PDMS膜构成第二传送头。\n\n[0019]所述中转基板包括PMMA接收层；所述步骤1中，所述微发光二极管放置于所述中转基板的PMMA接收层上。\n\n[0020]本发明还提供一种曲面微发光二极管显示面板的制作方法，包括如下步骤：按照上述的在曲面基板上转印微发光二极管的方法，在所述曲面基板上转印出用于构成显示像素的微发光二极管显示阵列，所述曲面基板为TFT阵列基板；然后对所述微发光二极管显示阵列进行封装，得到曲面微发光二极管显示面板。\n\n[0021]本发明的有益效果：本发明提供的一种在曲面基板上转印微发光二极管的方法，通过两次微转印制程将微发光二极管转印到曲面基板上，首先利用第一传送头进行第一次微转印制程，在第一次微转印制程中，第一传送头从载体基板上拾取微发光二极管并将所拾取的所述微发光二极管放置于中转基板上，然后利用柔性的第二传送头进行第二次微转印制程，在第二次微转印制程中，第二传送头拾取所述中转基板上的微发光二极管，然后随曲面基板的形状发生形变而贴附于所述曲面基板上，从而将所拾取的微发光二极管放置于曲面基板上，实现了微发光二极管在曲面基板的弧面、球面等曲面上的转印，从而可以进一步用于制作曲面微发光二极管显示面板的显示像素阵列，进而用于实现曲面显示效果。本发明的曲面微发光二极管显示面板的制作方法，采用上述的在曲面基板上转印微发光二极管的方法形成微发光二极管显示阵列，从而制得了具有曲面显示效果的曲面微发光二极管显示面板。\n\n附图说明\n\n[0022]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0023]附图中，\n\n[0024]图1为本发明的在曲面基板上转印微发光二极管的方法的流程示意图；\n\n[0025]图2-5为本发明的在曲面基板上转印微发光二极管的方法的步骤1的示意图；\n\n[0026]图6-9为本发明的在曲面基板上转印微发光二极管的方法的步骤2的示意图。\n\n具体实施方式\n\n[0027]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0028]请参阅图1，本发明首先提供一种在曲面基板上转印微发光二极管的方法，包括如下步骤：\n\n[0029]步骤1、如图2-5所示，提供第一传送头51、载体基板10、及中转基板30，所述载体基板10上具有数个微发光二极管21，利用所述第一传送头51进行第一次微转印制程，在第一次微转印制程中，所述第一传送头51拾取所述载体基板10上的微发光二极管21，然后将所拾取的所述微发光二极管21放置于中转基板30上，在中转基板30上形成第一微发光二极管阵列。\n\n[0030]具体地，该步骤1中的，所述第一次微转印制程主要用于从载体基板10上拾取微发光二极管21，形成规格较小的第一微发光二极管阵列，从而减小后续柔性的第二传送头52拾取微发光二极管21时的吸附负担；所述第一次微转印制程通过采用正常的微转印方式来转印微发光二极管21，即所述第一次微转印制程可以采用类似LuxVue公司的微转印方法，此时，第一传送头51上设有电极，所述第一传送头51通过静电力对所述微发光二极管21进行微转印，当然，所述第一次微转印制程也可以采用类似X-Celeprint公司的微转印方法，此时，所述第一传送头51为PDMS传送头，具有PDMS层，所述第一传送头51利用PDMS层对所述微发光二极管21的吸附力进行微转印。\n\n[0031]具体地，所述中转基板30包括接收层，该步骤1中，所述微发光二极管21放置于所述中转基板30的接收层上；该接收层对微发光二极管21的吸附力与PDMS对微发光二极管21的吸附力大致相当，从而保证通过控制速率而进行拾取和释放动作的PDMS传送头能够有效地在该接受层上拾取、和释放微发光二极管21，即保证采用PDMS传送头的第一传送头51能够有效地将微发光二极管21置于中转基板30上，及后续的第二传送头52能够有效地从中转基板30上拾取微发光二极管21；优选地，所述接收层为聚甲基丙烯酸甲酯(PolymethylMethacrylate，PMMA)接收层，所述中转基板30可以通过在玻璃基板的表面形成PMMA接收层而制得。\n\n[0032]步骤2、如图6-9所示，提供第二传送头52、及曲面基板20，所述第二传送头52具有柔性，利用所述第二传送头52进行第二次微转印制程，在第二次微转印制程中，所述第二传送头52拾取所述中转基板30上的微发光二极管21，然后载有微发光二极管21的第二传送头52随所述曲面基板20的形状发生形变而贴附于所述曲面基板20上，将所拾取的微发光二极管21放置于曲面基板20上，在曲面基板20上形成第二微发光二极管阵列。\n\n[0033]具体地，所述第二传送头52为PDMS传送头，利用PDMS对微发光二极管21的吸附力来进行微转印，其包括柔性PDMS膜521，所述柔性PDMS膜521具有吸附面，所述第二传送头52通过所述柔性PDMS膜521的吸附面拾取所述微发光二极管21，由于所述柔性PDMS膜521足够薄而具有出柔性，从而可以通过形变而均匀贴附在曲面结构上，所述柔性PDMS膜521的厚度具体为20μm-1000μm。\n\n[0034]具体地，所述柔性PDMS膜521的吸附面可以具有凸起结构，所述第二传送头52通过柔性PDMS膜521的凸起结构拾取微发光二极管21，从而可以通过吸附面上的凸起结构，进一步对第一传送头51所转印出的第一微发光二极管阵列中的微发光二极管21进行选择，而构成新的微发光二极管排列方式，形成不同于第一微发光二极管阵列的第二微发光二极管阵列。\n\n[0035]优选地，所述柔性PDMS膜521的吸附面为平面，因为吸附面为平面结构可以保证所述柔性PDMS膜521足够薄而具有更好的柔性，此时，所述第二微发光二极管阵列所构成的图案结构与所述第一微发光二极管阵列所构成的图案结构相同。\n\n[0036]具体地，所述第二传送头52还可以包括用于承载所述柔性PDMS膜521的柔性衬底522。\n\n[0037]具体地，所述步骤2中提供的第二传送头52可独立制得，也可由所述第一传送头51制得，具体由所述第一传送头51制得的方法为：第一传送头51采用PDMS传送头，其具体结构包括衬底基板(例如PMMA衬底基板)、及形成于所述衬底基板上的PDMS膜，将所述第一传送头51的衬底基板通过化学方法溶解掉，剩余的PDMS膜则构成第二传送头52。\n\n[0038]本发明的在曲面基板上转印微发光二极管的方法，通过两次微转印制程将微发光二极管转印到曲面基板上，首先利用第一传送头51进行第一次微转印制程，在第一次微转印制程中，第一传送头51从载体基板10上拾取微发光二极管21并将所拾取的所述微发光二极管21放置于中转基板30上，然后利用柔性的第二传送头52进行第二次微转印制程，在第二次微转印制程中，第二传送头52拾取所述中转基板30上的微发光二极管21，然后随曲面基板20的形状发生形变而贴附于所述曲面基板20上，从而将所拾取的微发光二极管21放置于曲面基板20上；该方法能够用于微发光二极管在曲面基板的弧面、球面、甚至其他不规则的曲面上的转印，从而可以用于制作曲面微发光二极管显示面板的显示像素阵列，进而用于实现曲面显示效果。\n\n[0039]基于上述的在曲面基板上转印微发光二极管的方法，本发明还提供一种曲面微发光二极管显示面板的制作方法，包括如下步骤：按照上述的在曲面基板上转印微发光二极管的方法，在所述曲面基板20上转印出用于构成显示像素的微发光二极管显示阵列，此时，所述曲面基板20为TFT阵列基板；然后对所述微发光二极管显示阵列进行封装，得到曲面微发光二极管显示面板。\n\n[0040]综上所述，本发明提供的一种在曲面基板上转印微发光二极管的方法，通过两次微转印制程将微发光二极管转印到曲面基板上，首先利用第一传送头进行第一次微转印制程，在第一次微转印制程中，第一传送头从载体基板上拾取微发光二极管并将所拾取的所述微发光二极管放置于中转基板上，然后利用柔性的第二传送头进行第二次微转印制程，在第二次微转印制程中，第二传送头拾取所述中转基板上的微发光二极管，然后随曲面基板的形状发生形变而贴附于所述曲面基板上，从而将所拾取的微发光二极管放置于曲面基板上，实现了微发光二极管在曲面基板的弧面、球面等曲面上的转印，从而可以进一步用于制作曲面微发光二极管显示面板的显示像素阵列，进而用于实现曲面显示效果。本发明的曲面微发光二极管显示面板的制作方法，采用上述的在曲面基板上转印微发光二极管的方法形成微发光二极管显示阵列，从而制得了具有曲面显示效果的曲面微发光二极管显示面板。\n\n[0041]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种在曲面基板上转印微发光二极管的方法及曲面微发光二极管显示面板的制作方法。\n\n背景技术\n\n[0002]微发光二极管(Micro LED)是一种尺寸在几微米到几百微米之间的器件，由于其较普通LED的尺寸要小很多，从而使得单一的LED作为像素(Pixel)用于显示成为可能，Micro LED显示器便是一种以高密度的Micro LED阵列作为显示像素阵列来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但Micro LED显示器相比于OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0003]由于晶格匹配的原因，Micro LED器件必须先在蓝宝石类的供给基板上通过分子束外延的方法生长出来，随后通过激光剥离(Laser lift-off，LLO)技术将微发光二极管裸芯片(bare chip)从供给基板上分离开，然后通过微转印(Micro Transfer Print，NTP)技术将其转移到已经预先制备完成电路图案的接收基板上，形成Micro LED阵列，进而做成Micro LED显示面板。其中，微转印的基本原理大致为：使用具有图案化的传送头(Transferhead)，例如具有凸起结构的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)类传送头，通过具有粘性的PDMS传送层(Transfer layer)将Micro LED bare chip从供给基板吸附起来，然后将PDMS传送头与接收基板进行对位，随后将PDMS传送头所吸附的Micro LED barechip贴附到接收基板预设的位置上，再将PDMS传送头从接收基板上剥离，即可完成MicroLED bare chip的转移，形成Micro LED阵列。\n\n[0004]目前，来自爱尔兰的X-celeprint、美国德州大学等都曾发表过有关Micro LED显示器的研究成果。苹果公司于2014年正式收购具有Micro LED技术的LuxVue后，引发业界开始关注于Micro LED的技术优势，作为一家掌握Micro LED Transfer Printing的高技术公司，LuxVue与X-Celeprint所使用的微转移技术差别较大。X-Celeprint主要利用PDMS等膜层结构的吸附力进行转移动作，而LuxVue通过在传送头的凸起上通电，利用静电力来吸附Micro LED等器件。\n\n[0005]另外，随着显示技术的发展，人们对消费性电子产品的要求已经不单单局限于功能性，曲面显示器相较于平面显示器，设计新颖，视觉体验效果更佳；如果将Micro LED显示技术与曲面显示技术进行结合，那么首先所要解决的问题便是如何将Micro LED转移在接收基板的弧面或球面等其他曲面上而制备出显示阵列。\n\n发明内容\n\n[0006]本发明的目的在于提供一种在曲面基板上转印微发光二极管的方法，通过两次微转印制程将微发光二极管转印到曲面基板上，可用于制作曲面微发光二极管显示面板，从而达成曲面显示效果。\n\n[0007]本发明的目的还在于提供一种曲面微发光二极管显示面板的制作方法，采用上述的在曲面基板上转印微发光二极管的方法形成微发光二极管显示阵列，从而制得曲面微发光二极管显示面板。\n\n[0008]为实现上述目的，本发明提供了一种在曲面基板上转印微发光二极管的方法，包括如下步骤：\n\n[0009]步骤1、提供第一传送头、载体基板、及中转基板，所述载体基板上具有数个微发光二极管，利用所述第一传送头进行第一次微转印制程，在第一次微转印制程中，所述第一传送头拾取所述载体基板上的微发光二极管，然后将所拾取的所述微发光二极管放置于中转基板上，在中转基板上形成第一微发光二极管阵列；\n\n[0010]步骤2、提供第二传送头、及曲面基板，所述第二传送头具有柔性，利用所述第二传送头进行第二次微转印制程，在第二次微转印制程中，所述第二传送头拾取所述中转基板上的微发光二极管，然后载有微发光二极管的第二传送头随所述曲面基板的形状发生形变而贴附于所述曲面基板上，将所拾取的微发光二极管放置于曲面基板上，在曲面基板上形成第二微发光二极管阵列。\n\n[0011]所述第一传送头上设有电极，所述第一传送头通过静电力对所述微发光二极管进行微转印。\n\n[0012]所述第一传送头为PDMS传送头，具有PDMS层，所述第一传送头利用PDMS层对所述微发光二极管的吸附力进行微转印。\n\n[0013]所述第二传送头包括柔性PDMS膜，所述柔性PDMS膜具有吸附面，所述第二传送头通过所述柔性PDMS膜的吸附面拾取所述微发光二极管，所述柔性PDMS膜的厚度为20μm-1000μm。\n\n[0014]所述柔性PDMS膜的吸附面为平面，所述第二微发光二极管阵列所构成的图案结构与所述第一微发光二极管阵列所构成的图案结构相同。\n\n[0015]所述柔性PDMS膜的吸附面具有凸起结构，所述第二传送头通过柔性PDMS膜的凸起结构拾取微发光二极管。\n\n[0016]所述第二传送头还包括用于承载所述柔性PDMS膜的柔性衬底。\n\n[0017]所述第一传送头为PDMS传送头，包括衬底基板、及形成于所述衬底基板上的PDMS膜；\n\n[0018]所述步骤2中提供的第二传送头由所述第一传送头制得，具体制作过程为：将所述第一传送头的衬底基板通过化学方法溶解掉，剩余的PDMS膜构成第二传送头。\n\n[0019]所述中转基板包括PMMA接收层；所述步骤1中，所述微发光二极管放置于所述中转基板的PMMA接收层上。\n\n[0020]本发明还提供一种曲面微发光二极管显示面板的制作方法，包括如下步骤：按照上述的在曲面基板上转印微发光二极管的方法，在所述曲面基板上转印出用于构成显示像素的微发光二极管显示阵列，所述曲面基板为TFT阵列基板；然后对所述微发光二极管显示阵列进行封装，得到曲面微发光二极管显示面板。\n\n[0021]本发明的有益效果：本发明提供的一种在曲面基板上转印微发光二极管的方法，通过两次微转印制程将微发光二极管转印到曲面基板上，首先利用第一传送头进行第一次微转印制程，在第一次微转印制程中，第一传送头从载体基板上拾取微发光二极管并将所拾取的所述微发光二极管放置于中转基板上，然后利用柔性的第二传送头进行第二次微转印制程，在第二次微转印制程中，第二传送头拾取所述中转基板上的微发光二极管，然后随曲面基板的形状发生形变而贴附于所述曲面基板上，从而将所拾取的微发光二极管放置于曲面基板上，实现了微发光二极管在曲面基板的弧面、球面等曲面上的转印，从而可以进一步用于制作曲面微发光二极管显示面板的显示像素阵列，进而用于实现曲面显示效果。本发明的曲面微发光二极管显示面板的制作方法，采用上述的在曲面基板上转印微发光二极管的方法形成微发光二极管显示阵列，从而制得了具有曲面显示效果的曲面微发光二极管显示面板。\n\n附图说明\n\n[0022]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0023]附图中，\n\n[0024]图1为本发明的在曲面基板上转印微发光二极管的方法的流程示意图；\n\n[0025]图2-5为本发明的在曲面基板上转印微发光二极管的方法的步骤1的示意图；\n\n[0026]图6-9为本发明的在曲面基板上转印微发光二极管的方法的步骤2的示意图。\n\n具体实施方式\n\n[0027]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0028]请参阅图1，本发明首先提供一种在曲面基板上转印微发光二极管的方法，包括如下步骤：\n\n[0029]步骤1、如图2-5所示，提供第一传送头51、载体基板10、及中转基板30，所述载体基板10上具有数个微发光二极管21，利用所述第一传送头51进行第一次微转印制程，在第一次微转印制程中，所述第一传送头51拾取所述载体基板10上的微发光二极管21，然后将所拾取的所述微发光二极管21放置于中转基板30上，在中转基板30上形成第一微发光二极管阵列。\n\n[0030]具体地，该步骤1中的，所述第一次微转印制程主要用于从载体基板10上拾取微发光二极管21，形成规格较小的第一微发光二极管阵列，从而减小后续柔性的第二传送头52拾取微发光二极管21时的吸附负担；所述第一次微转印制程通过采用正常的微转印方式来转印微发光二极管21，即所述第一次微转印制程可以采用类似LuxVue公司的微转印方法，此时，第一传送头51上设有电极，所述第一传送头51通过静电力对所述微发光二极管21进行微转印，当然，所述第一次微转印制程也可以采用类似X-Celeprint公司的微转印方法，此时，所述第一传送头51为PDMS传送头，具有PDMS层，所述第一传送头51利用PDMS层对所述微发光二极管21的吸附力进行微转印。\n\n[0031]具体地，所述中转基板30包括接收层，该步骤1中，所述微发光二极管21放置于所述中转基板30的接收层上；该接收层对微发光二极管21的吸附力与PDMS对微发光二极管21的吸附力大致相当，从而保证通过控制速率而进行拾取和释放动作的PDMS传送头能够有效地在该接受层上拾取、和释放微发光二极管21，即保证采用PDMS传送头的第一传送头51能够有效地将微发光二极管21置于中转基板30上，及后续的第二传送头52能够有效地从中转基板30上拾取微发光二极管21；优选地，所述接收层为聚甲基丙烯酸甲酯(PolymethylMethacrylate，PMMA)接收层，所述中转基板30可以通过在玻璃基板的表面形成PMMA接收层而制得。\n\n[0032]步骤2、如图6-9所示，提供第二传送头52、及曲面基板20，所述第二传送头52具有柔性，利用所述第二传送头52进行第二次微转印制程，在第二次微转印制程中，所述第二传送头52拾取所述中转基板30上的微发光二极管21，然后载有微发光二极管21的第二传送头52随所述曲面基板20的形状发生形变而贴附于所述曲面基板20上，将所拾取的微发光二极管21放置于曲面基板20上，在曲面基板20上形成第二微发光二极管阵列。\n\n[0033]具体地，所述第二传送头52为PDMS传送头，利用PDMS对微发光二极管21的吸附力来进行微转印，其包括柔性PDMS膜521，所述柔性PDMS膜521具有吸附面，所述第二传送头52通过所述柔性PDMS膜521的吸附面拾取所述微发光二极管21，由于所述柔性PDMS膜521足够薄而具有出柔性，从而可以通过形变而均匀贴附在曲面结构上，所述柔性PDMS膜521的厚度具体为20μm-1000μm。\n\n[0034]具体地，所述柔性PDMS膜521的吸附面可以具有凸起结构，所述第二传送头52通过柔性PDMS膜521的凸起结构拾取微发光二极管21，从而可以通过吸附面上的凸起结构，进一步对第一传送头51所转印出的第一微发光二极管阵列中的微发光二极管21进行选择，而构成新的微发光二极管排列方式，形成不同于第一微发光二极管阵列的第二微发光二极管阵列。\n\n[0035]优选地，所述柔性PDMS膜521的吸附面为平面，因为吸附面为平面结构可以保证所述柔性PDMS膜521足够薄而具有更好的柔性，此时，所述第二微发光二极管阵列所构成的图案结构与所述第一微发光二极管阵列所构成的图案结构相同。\n\n[0036]具体地，所述第二传送头52还可以包括用于承载所述柔性PDMS膜521的柔性衬底522。\n\n[0037]具体地，所述步骤2中提供的第二传送头52可独立制得，也可由所述第一传送头51制得，具体由所述第一传送头51制得的方法为：第一传送头51采用PDMS传送头，其具体结构包括衬底基板(例如PMMA衬底基板)、及形成于所述衬底基板上的PDMS膜，将所述第一传送头51的衬底基板通过化学方法溶解掉，剩余的PDMS膜则构成第二传送头52。\n\n[0038]本发明的在曲面基板上转印微发光二极管的方法，通过两次微转印制程将微发光二极管转印到曲面基板上，首先利用第一传送头51进行第一次微转印制程，在第一次微转印制程中，第一传送头51从载体基板10上拾取微发光二极管21并将所拾取的所述微发光二极管21放置于中转基板30上，然后利用柔性的第二传送头52进行第二次微转印制程，在第二次微转印制程中，第二传送头52拾取所述中转基板30上的微发光二极管21，然后随曲面基板20的形状发生形变而贴附于所述曲面基板20上，从而将所拾取的微发光二极管21放置于曲面基板20上；该方法能够用于微发光二极管在曲面基板的弧面、球面、甚至其他不规则的曲面上的转印，从而可以用于制作曲面微发光二极管显示面板的显示像素阵列，进而用于实现曲面显示效果。\n\n[0039]基于上述的在曲面基板上转印微发光二极管的方法，本发明还提供一种曲面微发光二极管显示面板的制作方法，包括如下步骤：按照上述的在曲面基板上转印微发光二极管的方法，在所述曲面基板20上转印出用于构成显示像素的微发光二极管显示阵列，此时，所述曲面基板20为TFT阵列基板；然后对所述微发光二极管显示阵列进行封装，得到曲面微发光二极管显示面板。\n\n[0040]综上所述，本发明提供的一种在曲面基板上转印微发光二极管的方法，通过两次微转印制程将微发光二极管转印到曲面基板上，首先利用第一传送头进行第一次微转印制程，在第一次微转印制程中，第一传送头从载体基板上拾取微发光二极管并将所拾取的所述微发光二极管放置于中转基板上，然后利用柔性的第二传送头进行第二次微转印制程，在第二次微转印制程中，第二传送头拾取所述中转基板上的微发光二极管，然后随曲面基板的形状发生形变而贴附于所述曲面基板上，从而将所拾取的微发光二极管放置于曲面基板上，实现了微发光二极管在曲面基板的弧面、球面等曲面上的转印，从而可以进一步用于制作曲面微发光二极管显示面板的显示像素阵列，进而用于实现曲面显示效果。本发明的曲面微发光二极管显示面板的制作方法，采用上述的在曲面基板上转印微发光二极管的方法形成微发光二极管显示阵列，从而制得了具有曲面显示效果的曲面微发光二极管显示面板。\n\n[0041]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10579, 23633, '技术领域\n\n[0001]本发明涉及半导体技术领域，尤其涉及一种微发光二极管及其制造方法和显示器。\n\n背景技术\n\n[0002]微发光二极管(Micro LED)显示器的结构是微型化LED阵列，也就是将LED结构设计进行薄膜化、微小化与阵列化，将像素点距离从毫米级降低至微米级，同大尺度的户外LED显示屏一样，每一个像素可定址、单独驱动点亮；而与同样是自发光显示的OLED显示器相比，微发光二极管显示器还具有材料稳定性更好、寿命更长等优点。\n\n[0003]目前，微发光二极管发光单元有两种基本结构，平面结构和垂直结构，垂直结构的微发光二极管与平面结构的微发光二极管相比，可以提供更大发光面积，增加输出耦合效率。不过垂直结构的微发光二极管由于其复杂的几何结构，使得调节微发光二极管的颜色成为难点，且单色性容易变差。\n\n发明内容\n\n[0004]本发明主要解决的技术问题是提供一种微发光二极管及其制造方法，能够增加发光效率和改善现有技术中单色性的问题。\n\n[0005]为了解决上述技术问题，本发明采用的第一个技术方案是：提供一种微发光二极管的制备方法，包括：形成缓冲层柱体；在缓冲层柱体外壁依次形成PN结的构成层体；在PN结的构成层体外侧形成第一电极，且去掉缓冲层柱体后，在PN结的构成层体内侧形成第二电极，第一电极和第二电极之间绝缘。\n\n[0006]其中，形成缓冲层柱体包括：提供一基底；在基底上沉积而形成第一缓冲层；对第一缓冲层的预定位置进行蚀刻，以在预定位置暴露出基底；在基底的预定位置处生长出缓冲层柱体。\n\n[0007]其中，基底是Si掺杂的n-GaN/Al2O3基底，第一缓冲层是SiO2层。\n\n[0008]其中，缓冲层柱体是ZnO微米管/纳米管，在缓冲层柱体外壁依次形成PN结的构成层体包括：在ZnO微米管/纳米管外壁生长n-GaN层；在n-GaN层上沉积而形成第二缓冲层；对第二缓冲层进行蚀刻以暴露出一部分n-GaN层；在n-GaN层上依次形成多重量子阱层、p-GaN层。\n\n[0009]其中，在n-GaN层上依次形成多重量子阱层、p-GaN层过程中，在每两相邻层之间均进一步进行以下处理：形成第三缓冲层以覆盖遮挡较下层的结构；刻蚀掉一部分第三缓冲层。\n\n[0010]其中，多重量子阱层是μ-InxGa1-xN/μ-GaN多重量子阱层，p-GaN 是掺Mg的p-GaN层。\n\n[0011]其中，在n-GaN层上依次形成多重量子阱层、p-GaN层后包括：在惰性气体氛围中退火。\n\n[0012]其中，在PN结的构成层体外侧形成第一电极包括：在基底及PN 结的构成层体上涂布并固化PI液；将PN结的构成层体的上端的PI液蚀刻掉，暴露出PN结的构成层体；在基底及PN结的构成层体上沉积金属Ni/Au层和Ag层，以得到第一电极。\n\n[0013]去掉缓冲层柱体后，在PN结的构成层体内侧形成第二电极包括：去掉基底；刻蚀掉作为牺牲层的第一缓冲层和缓冲层柱体；将PN结的构成层体翻转，并沉积金属Ti/Au层和ITO层，以得到第二电极。\n\n[0014]为解决上述技术问题，本发明采用的第二个技术方案是：提供一种微发光二极管，包括：第一电极和套设于第一电极的第二电极，且第一电极和第二电极之间绝缘；填充于第一电极和第二电极之间的PN结的构成层体。\n\n[0015]其中，PN结的构成层体进一步包括：由内向外依次生长的n-GaN 层、多重量子阱层、p-GaN层。\n\n[0016]为解决上述技术问题，本发明采用的第三个技术方案是：提供一种微发光二极管显示器，包括：如上所述的微发光二极管。\n\n[0017]本发明的有益效果是：通过在缓冲层柱体外壁依次形成PN结的构成层体后，在PN结的构成层体外侧形成第一电极，且去掉缓冲层柱体后在PN结的构成层体内侧形成第二电极，第一电极和第二电极在PN 结的构成层之外相互绝缘，其制成的微发光二极管为管状结构。管状的微发光二极管结构能有效降低第一电极和第二电极之间经由PN结的构成层通路的阻抗，从而提高导电率，增加微发光二极管的发光效率；同时，其微米管/纳米管的结构增加了PN结的有效作用面积，增加电流密度，从而有效提高微发光二极管的发光效率，改善微发光二极管的单色性。\n\n附图说明\n\n[0018]图1是本发明微发光二极管制造方法第一实施例的流程示意图；\n\n[0019]图2是图1中步骤S11的流程示意图；\n\n[0020]图3是图1中步骤S12的流程示意图；\n\n[0021]图4是图1中步骤S13的流程示意图；\n\n[0022]图5是图4中步骤S130的流程示意图；\n\n[0023]图6是图4中步骤S131的流程示意图；\n\n[0024]图7是本发明微发光二极管制造方法第二实施例的流程示意图；\n\n[0025]图8是本发明微发光二极管一实施例的结构示意图；\n\n[0026]图9是本发明微发光二极管显示器的结构示意图。\n\n具体实施方式\n\n[0027]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。\n\n[0028]如图1所示，本发明微发光二极管第一实施例的流程示意图，包括：\n\n[0029]S11：形成缓冲层柱体。\n\n[0030]采用低温生长或蚀刻等方式形成缓冲层柱体。其中，缓冲层柱体既能有效解决基底材料和n-GaN层材料之间晶格常数和热膨胀系数失配造成的困难，同时，也能为形成PN结的构成层体起到辅助支撑的作用。\n\n[0031]S12：在缓冲层柱体外壁依次形成PN结的构成层体。\n\n[0032]通过MOCVD(Metal-organic Chemical Vapor Deposition，金属有机化合物化学气相沉淀)等方式在缓冲层柱体外壁依次形成PN结的构成层体，层体包围缓冲层柱体。\n\n[0033]S13：在PN结的构成层体外侧形成第一电极，且去掉缓冲层柱体后，在PN结的构成层体内侧形成第二电极，第一电极和第二电极之间绝缘。\n\n[0034]可以看出，本实施例通过在缓冲层柱体外壁依次形成PN结的构成层体后，在PN结的构成层体外侧形成第一电极，且去掉缓冲层柱体后在PN结的构成层体内侧形成第二电极，第一电极和第二电极在PN结的构成层之外相互绝缘，其制成的微发光二极管为管状结构。管状的微发光二极管结构能有效降低第一电极和第二电极之间经由PN结的构成层通路的阻抗，从而提高导电率，增加微发光二极管的发光效率；同时，其微米管/纳米管的结构增加了PN结的有效作用面积，增加电流密度，从而有效提高微发光二极管的发光效率，改善微发光二极管的单色性。\n\n[0035]如图2所示，在具体实施例中，图1中步骤11的流程包括：\n\n[0036]S110：提供一基底。基底材料可以是蓝宝石(Al2O3)、硅(Si)或者碳化硅(SiC)，优选地，使用Si掺杂的n-GaN/Al2O3作为MOVPE (Metal-organic Vapor-phase Epitaxy)基底。\n\n[0037]S111：在基底上沉积而形成第一缓冲层。第一缓冲层是SiO2层，通过PECVD(PlasmaEnhanced Chemical Vapor Deposition，等离子体增强化学气相沉积法)在Si掺杂的n-GaN/Al2O3基底上沉积而形成SiO2层，在一应用例中，SiO2层的厚度可以为50～200nm，例如100nm。\n\n[0038]S112：对第一缓冲层的预定位置进行蚀刻，以在预定位置暴露出基底。通过匀胶、曝光、显影、刻蚀等方式制作出所需的SiO2图案，以供在特定位置生长缓冲层柱体，其中图案形状可根据后续所需生长的缓冲层柱体形状面设定，具体不作限制。\n\n[0039]S113：在基底的预定位置处生长出缓冲层柱体。缓冲层柱体材料可以是AlN(氮化铝)、GaN(氮化镓)、SiC(碳化硅)和ZnO(氧化锌)，优选地，缓冲层柱体是ZnO微米管/纳米管。通过PVD(Physical Vapor Deposition，物理气相沉积)等方式在基底的预定位置生长ZnO微米管/ 纳米管，且多个ZnO微米管/纳米管结构间相互间隔设置，其中ZnO微米管/纳米管结构形状与SiO2图案的形状相同。在一应用例中，多个ZnO 微米管/纳米管结构可为周期性点阵结构，实现多个ZnO微米管/纳米管结构的均匀设置，保证多个ZnO微米管/纳米管结构分布的均匀，从而保证微发光二极管的出光均匀。\n\n[0040]如图3所示，在具体实施例中，图1中步骤12包括：\n\n[0041]S120：在ZnO微米管/纳米管外壁生长n-GaN层。通过MOCVD (Metal-organicChemical Vapor Deposition，金属有机化合物化学气象沉淀)等方式在ZnO微米管/纳米管外壁生长n-GaN层。\n\n[0042]S121：在n-GaN层上沉积而形成第二缓冲层；对第二缓冲层进行蚀刻以暴露出一部分n-GaN层。在n-GaN层上沉积而形成第二缓冲层包括：在n-GaN层上沉积一定厚度的SiO2，在一应用例中，厚度可以为 50～200nm，例如为50nm，并将上面一部分SiO2刻蚀，露出一部分n-GaN；用一定厚度的PMMA(polymethyl methacrylate，聚甲基丙烯酸甲酯，俗称有机玻璃)覆盖遮挡ZnO/n-GaN/SiO2，在一应用例中，PMMA的厚度为1um，刻蚀掉上面一部分PMMA。其中，SiO2层和PMMA层起掩模的作用，蚀刻后只遮挡一部分n-GaN层，不保留在最终微发光二极管结构中。多重量子阱层、p-GaN层依次形成于n-GaN层暴露的部分上。\n\n[0043]S122：在n-GaN层上依次形成多重量子阱层、p-GaN层。通过 MOCVD在n-GaN层上依次形成多重量子阱层、p-GaN层过程中，在每两相邻层之间均进一步进行以下处理：形成第三缓冲层以覆盖遮挡较下层的结构；刻蚀掉一部分第三缓冲层，以在多重量子阱层暴露的部分上形成p-GaN层。\n\n[0044]在本实施例中，第一缓冲层、第二缓冲层和第三缓冲层使得由内而外形成的n-GaN/多重量子阱层/p-GaN层所暴露出的高度不同。\n\n[0045]其中，MQWs是μ-InxGa1-xN/μ-GaN MQWs，p-GaN是掺Mg的 p-GaN层。在n-GaN层上依次形成MQWs、p-GaN层后包括：在惰性气体氛围中退火，如：氮气。\n\n[0046]如图4所示，在具体实施例中，图1中步骤13包括：\n\n[0047]S130：在PN结的构成层体外侧形成第一电极。\n\n[0048]S131：去掉缓冲层柱体后，在PN结的构成层体内侧形成第二电极。其中，第一电极为沉积的金属Ni/Au层和Ag层，第二电极为沉积的金属Ti/Au层和ITO层。\n\n[0049]如图5所示，在具体实施例中，图4中步骤S130进一步包括：\n\n[0050]S1300：在基底及PN结的构成层体上涂布并固化PI液。在基底及 PN结的构成层体上涂布PI(Polyimide，聚酰亚胺)液并使其固化，用于隔绝PN结的构成层体外侧形成第一电极和PN结的构成层体内侧形成第二电极，使第一电极和第二电极绝缘，且起到固定的作用，从而控制微发光二极管光的方向。\n\n[0051]S1301：将PN结的构成层体的上端的PI液蚀刻掉，暴露出PN结的构成层体。\n\n[0052]S1302：在基底及PN结的构成层体上沉积金属Ni/Au层和Ag层，以得到第一电极。在一实施例中，金属Ni/Au层的厚度可以为5～20nm，例如10nm，Ag层的厚度为几个微米。\n\n[0053]如图6所示，在具体实施例中，图4中步骤S131进一步包括：\n\n[0054]S1310：去掉基底。\n\n[0055]S1311：刻蚀掉作为牺牲层的第一缓冲层和缓冲层柱体。从而形成中空的ZnO微米管/纳米管结构。\n\n[0056]S1312：将PN结的构成层体翻转，并沉积金属Ti/Au层和ITO层，以得到第二电极。在一应用例中，金属Ti/Au层的厚度为2～5nm，ITO 层的厚度为800～1200nm。\n\n[0057]上述说明中各层的厚度、各层的沉积方式以及金属电极层材料仅为示例，实际应用可根据需要决定。\n\n[0058]在其他实施例中，N型半导体层和P型半导体层材料可以是InGaN、 AlGaInP、GaAlAs或其任一两者之间的组合，但不仅限于此。\n\n[0059]通过上述实施例的实施，在缓冲层柱体外壁依次形成PN结的构成层体后，在PN结的构成层体外侧形成第一电极，且去掉缓冲层柱体后在PN结的构成层体内侧形成第二电极，从而制成具有金属电极与中空的微米管/纳米管结构的微发光二极管。微发光二极管利用中空的几何形貌制备金属电极，有效降了金属电极间的阻抗，从而提高导电率，增加微发光二极管的发光效率；同时，其微米管/纳米管的结构增加了p-n结有效作用面积，增高电流密度，从而有效提高微发光二极管的发光效率，改善微发光二极管单色性。\n\n[0060]如图7所示，本发明微发光二极管制造方法的第二实施例的流程示意图，包括：\n\n[0061]S71：提供一基底。\n\n[0062]S72：在基底上沉积而形成第一缓冲层。\n\n[0063]S73：对第一缓冲层的预定位置进行蚀刻，以在预定位置暴露出基地。\n\n[0064]S74：在基底的预定位置处生长出缓冲层柱体。\n\n[0065]S75：在缓冲层柱体外币生长n-GaN层。\n\n[0066]S76：在n-GaN层上依次形成多重量子阱层、p-GaN层。\n\n[0067]S77：在基底及PN结的构成层体上涂布并固化PI液，将PN结的构成层体的上端的PI液蚀刻掉，暴露出PN结的构成层体。\n\n[0068]S78：在基底及PN结的构成层体上形成第一电极。\n\n[0069]S79：去掉基底，刻蚀掉作为牺牲层的第一缓冲层和缓冲层柱体后，将PN结的构成层体翻转，在PN结的构成层体内侧形成第二电极。\n\n[0070]本实施例中各层的材料、功能、厚度具体可参考本发明微发光二极管制造方法第一实施例中的描述，在此不再重复。其中，各层的厚度、各层的沉积方式以及金属电极层材料仅为示例，实际应用可根据需要决定。在其他实施例中，n型半导体层和p型半导体层材料可以是InGaN、 AlGaInP、GaAlAs或其任一两者之间的组合，但不仅限于此。\n\n[0071]如图8所示，本发明微发光二极管一实施例的结构示意图，包括：第一电极810、第二电极82、PI层83、PN结的构成层体84。\n\n[0072]第二电极82套设于第一电极810；PI层83位于第二电极82的上方，使得第一电极810和第二电极82之间绝缘；PN结的构成层体84填充于第一电极810和第二电极82之间。\n\n[0073]第一电极为沉积的金属Ti/Au层和ITO层；第二电极为金属Ni/Au 层820和Ag层821；PN结的构成层体84进一步包括由内而外依次生长n-GaN层840、多重量子阱层841、p-GaN层842。\n\n[0074]本实施例中各层的材料、功能、厚度具体可参考本发明微发光二极管制造方法第一实施例中的描述，在此不再重复。其中，各层的厚度、大小及位置仅为示意，实际应用可根据需要决定。在其他实施例中，n 型半导体层和p型半导体层材料可以是InGaN、AlGaInP、GaAlAs或其任一两者之间的组合，但不仅限于此。\n\n[0075]如图9所示，本发明微发光二极管显示器一实施例的结构示意图，包括：基板90；设置于基板90上的子像素区域91；设置于子像素区域 91内的微发光二极管92。\n\n[0076]其中，子像素区域91阵列排布；微发光二极管92的结构如图8所示。\n\n[0077]图中子像素区域91和微发光二极管92的大小以及相对位置关系仅为示意，实际应用可根据需要决定。\n\n[0078]在此基础上，以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明书及附图内容所作的等效结构或等效流程变换，例如各实施例之间技术特征的相互结合，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。', '技术领域\n\n[0001]本发明涉及半导体技术领域，尤其涉及一种微发光二极管及其制造方法和显示器。\n\n背景技术\n\n[0002]微发光二极管(Micro LED)显示器的结构是微型化LED阵列，也就是将LED结构设计进行薄膜化、微小化与阵列化，将像素点距离从毫米级降低至微米级，同大尺度的户外LED显示屏一样，每一个像素可定址、单独驱动点亮；而与同样是自发光显示的OLED显示器相比，微发光二极管显示器还具有材料稳定性更好、寿命更长等优点。\n\n[0003]目前，微发光二极管发光单元有两种基本结构，平面结构和垂直结构，垂直结构的微发光二极管与平面结构的微发光二极管相比，可以提供更大发光面积，增加输出耦合效率。不过垂直结构的微发光二极管由于其复杂的几何结构，使得调节微发光二极管的颜色成为难点，且单色性容易变差。\n\n发明内容\n\n[0004]本发明主要解决的技术问题是提供一种微发光二极管及其制造方法，能够增加发光效率和改善现有技术中单色性的问题。\n\n[0005]为了解决上述技术问题，本发明采用的第一个技术方案是：提供一种微发光二极管的制备方法，包括：形成缓冲层柱体；在缓冲层柱体外壁依次形成PN结的构成层体；在PN结的构成层体外侧形成第一电极，且去掉缓冲层柱体后，在PN结的构成层体内侧形成第二电极，第一电极和第二电极之间绝缘。\n\n[0006]其中，形成缓冲层柱体包括：提供一基底；在基底上沉积而形成第一缓冲层；对第一缓冲层的预定位置进行蚀刻，以在预定位置暴露出基底；在基底的预定位置处生长出缓冲层柱体。\n\n[0007]其中，基底是Si掺杂的n-GaN/Al2O3基底，第一缓冲层是SiO2层。\n\n[0008]其中，缓冲层柱体是ZnO微米管/纳米管，在缓冲层柱体外壁依次形成PN结的构成层体包括：在ZnO微米管/纳米管外壁生长n-GaN层；在n-GaN层上沉积而形成第二缓冲层；对第二缓冲层进行蚀刻以暴露出一部分n-GaN层；在n-GaN层上依次形成多重量子阱层、p-GaN层。\n\n[0009]其中，在n-GaN层上依次形成多重量子阱层、p-GaN层过程中，在每两相邻层之间均进一步进行以下处理：形成第三缓冲层以覆盖遮挡较下层的结构；刻蚀掉一部分第三缓冲层。\n\n[0010]其中，多重量子阱层是μ-InxGa1-xN/μ-GaN多重量子阱层，p-GaN 是掺Mg的p-GaN层。\n\n[0011]其中，在n-GaN层上依次形成多重量子阱层、p-GaN层后包括：在惰性气体氛围中退火。\n\n[0012]其中，在PN结的构成层体外侧形成第一电极包括：在基底及PN 结的构成层体上涂布并固化PI液；将PN结的构成层体的上端的PI液蚀刻掉，暴露出PN结的构成层体；在基底及PN结的构成层体上沉积金属Ni/Au层和Ag层，以得到第一电极。\n\n[0013]去掉缓冲层柱体后，在PN结的构成层体内侧形成第二电极包括：去掉基底；刻蚀掉作为牺牲层的第一缓冲层和缓冲层柱体；将PN结的构成层体翻转，并沉积金属Ti/Au层和ITO层，以得到第二电极。\n\n[0014]为解决上述技术问题，本发明采用的第二个技术方案是：提供一种微发光二极管，包括：第一电极和套设于第一电极的第二电极，且第一电极和第二电极之间绝缘；填充于第一电极和第二电极之间的PN结的构成层体。\n\n[0015]其中，PN结的构成层体进一步包括：由内向外依次生长的n-GaN 层、多重量子阱层、p-GaN层。\n\n[0016]为解决上述技术问题，本发明采用的第三个技术方案是：提供一种微发光二极管显示器，包括：如上所述的微发光二极管。\n\n[0017]本发明的有益效果是：通过在缓冲层柱体外壁依次形成PN结的构成层体后，在PN结的构成层体外侧形成第一电极，且去掉缓冲层柱体后在PN结的构成层体内侧形成第二电极，第一电极和第二电极在PN 结的构成层之外相互绝缘，其制成的微发光二极管为管状结构。管状的微发光二极管结构能有效降低第一电极和第二电极之间经由PN结的构成层通路的阻抗，从而提高导电率，增加微发光二极管的发光效率；同时，其微米管/纳米管的结构增加了PN结的有效作用面积，增加电流密度，从而有效提高微发光二极管的发光效率，改善微发光二极管的单色性。\n\n附图说明\n\n[0018]图1是本发明微发光二极管制造方法第一实施例的流程示意图；\n\n[0019]图2是图1中步骤S11的流程示意图；\n\n[0020]图3是图1中步骤S12的流程示意图；\n\n[0021]图4是图1中步骤S13的流程示意图；\n\n[0022]图5是图4中步骤S130的流程示意图；\n\n[0023]图6是图4中步骤S131的流程示意图；\n\n[0024]图7是本发明微发光二极管制造方法第二实施例的流程示意图；\n\n[0025]图8是本发明微发光二极管一实施例的结构示意图；\n\n[0026]图9是本发明微发光二极管显示器的结构示意图。\n\n具体实施方式\n\n[0027]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。\n\n[0028]如图1所示，本发明微发光二极管第一实施例的流程示意图，包括：\n\n[0029]S11：形成缓冲层柱体。\n\n[0030]采用低温生长或蚀刻等方式形成缓冲层柱体。其中，缓冲层柱体既能有效解决基底材料和n-GaN层材料之间晶格常数和热膨胀系数失配造成的困难，同时，也能为形成PN结的构成层体起到辅助支撑的作用。\n\n[0031]S12：在缓冲层柱体外壁依次形成PN结的构成层体。\n\n[0032]通过MOCVD(Metal-organic Chemical Vapor Deposition，金属有机化合物化学气相沉淀)等方式在缓冲层柱体外壁依次形成PN结的构成层体，层体包围缓冲层柱体。\n\n[0033]S13：在PN结的构成层体外侧形成第一电极，且去掉缓冲层柱体后，在PN结的构成层体内侧形成第二电极，第一电极和第二电极之间绝缘。\n\n[0034]可以看出，本实施例通过在缓冲层柱体外壁依次形成PN结的构成层体后，在PN结的构成层体外侧形成第一电极，且去掉缓冲层柱体后在PN结的构成层体内侧形成第二电极，第一电极和第二电极在PN结的构成层之外相互绝缘，其制成的微发光二极管为管状结构。管状的微发光二极管结构能有效降低第一电极和第二电极之间经由PN结的构成层通路的阻抗，从而提高导电率，增加微发光二极管的发光效率；同时，其微米管/纳米管的结构增加了PN结的有效作用面积，增加电流密度，从而有效提高微发光二极管的发光效率，改善微发光二极管的单色性。\n\n[0035]如图2所示，在具体实施例中，图1中步骤11的流程包括：\n\n[0036]S110：提供一基底。基底材料可以是蓝宝石(Al2O3)、硅(Si)或者碳化硅(SiC)，优选地，使用Si掺杂的n-GaN/Al2O3作为MOVPE (Metal-organic Vapor-phase Epitaxy)基底。\n\n[0037]S111：在基底上沉积而形成第一缓冲层。第一缓冲层是SiO2层，通过PECVD(PlasmaEnhanced Chemical Vapor Deposition，等离子体增强化学气相沉积法)在Si掺杂的n-GaN/Al2O3基底上沉积而形成SiO2层，在一应用例中，SiO2层的厚度可以为50～200nm，例如100nm。\n\n[0038]S112：对第一缓冲层的预定位置进行蚀刻，以在预定位置暴露出基底。通过匀胶、曝光、显影、刻蚀等方式制作出所需的SiO2图案，以供在特定位置生长缓冲层柱体，其中图案形状可根据后续所需生长的缓冲层柱体形状面设定，具体不作限制。\n\n[0039]S113：在基底的预定位置处生长出缓冲层柱体。缓冲层柱体材料可以是AlN(氮化铝)、GaN(氮化镓)、SiC(碳化硅)和ZnO(氧化锌)，优选地，缓冲层柱体是ZnO微米管/纳米管。通过PVD(Physical Vapor Deposition，物理气相沉积)等方式在基底的预定位置生长ZnO微米管/ 纳米管，且多个ZnO微米管/纳米管结构间相互间隔设置，其中ZnO微米管/纳米管结构形状与SiO2图案的形状相同。在一应用例中，多个ZnO 微米管/纳米管结构可为周期性点阵结构，实现多个ZnO微米管/纳米管结构的均匀设置，保证多个ZnO微米管/纳米管结构分布的均匀，从而保证微发光二极管的出光均匀。\n\n[0040]如图3所示，在具体实施例中，图1中步骤12包括：\n\n[0041]S120：在ZnO微米管/纳米管外壁生长n-GaN层。通过MOCVD (Metal-organicChemical Vapor Deposition，金属有机化合物化学气象沉淀)等方式在ZnO微米管/纳米管外壁生长n-GaN层。\n\n[0042]S121：在n-GaN层上沉积而形成第二缓冲层；对第二缓冲层进行蚀刻以暴露出一部分n-GaN层。在n-GaN层上沉积而形成第二缓冲层包括：在n-GaN层上沉积一定厚度的SiO2，在一应用例中，厚度可以为 50～200nm，例如为50nm，并将上面一部分SiO2刻蚀，露出一部分n-GaN；用一定厚度的PMMA(polymethyl methacrylate，聚甲基丙烯酸甲酯，俗称有机玻璃)覆盖遮挡ZnO/n-GaN/SiO2，在一应用例中，PMMA的厚度为1um，刻蚀掉上面一部分PMMA。其中，SiO2层和PMMA层起掩模的作用，蚀刻后只遮挡一部分n-GaN层，不保留在最终微发光二极管结构中。多重量子阱层、p-GaN层依次形成于n-GaN层暴露的部分上。\n\n[0043]S122：在n-GaN层上依次形成多重量子阱层、p-GaN层。通过 MOCVD在n-GaN层上依次形成多重量子阱层、p-GaN层过程中，在每两相邻层之间均进一步进行以下处理：形成第三缓冲层以覆盖遮挡较下层的结构；刻蚀掉一部分第三缓冲层，以在多重量子阱层暴露的部分上形成p-GaN层。\n\n[0044]在本实施例中，第一缓冲层、第二缓冲层和第三缓冲层使得由内而外形成的n-GaN/多重量子阱层/p-GaN层所暴露出的高度不同。\n\n[0045]其中，MQWs是μ-InxGa1-xN/μ-GaN MQWs，p-GaN是掺Mg的 p-GaN层。在n-GaN层上依次形成MQWs、p-GaN层后包括：在惰性气体氛围中退火，如：氮气。\n\n[0046]如图4所示，在具体实施例中，图1中步骤13包括：\n\n[0047]S130：在PN结的构成层体外侧形成第一电极。\n\n[0048]S131：去掉缓冲层柱体后，在PN结的构成层体内侧形成第二电极。其中，第一电极为沉积的金属Ni/Au层和Ag层，第二电极为沉积的金属Ti/Au层和ITO层。\n\n[0049]如图5所示，在具体实施例中，图4中步骤S130进一步包括：\n\n[0050]S1300：在基底及PN结的构成层体上涂布并固化PI液。在基底及 PN结的构成层体上涂布PI(Polyimide，聚酰亚胺)液并使其固化，用于隔绝PN结的构成层体外侧形成第一电极和PN结的构成层体内侧形成第二电极，使第一电极和第二电极绝缘，且起到固定的作用，从而控制微发光二极管光的方向。\n\n[0051]S1301：将PN结的构成层体的上端的PI液蚀刻掉，暴露出PN结的构成层体。\n\n[0052]S1302：在基底及PN结的构成层体上沉积金属Ni/Au层和Ag层，以得到第一电极。在一实施例中，金属Ni/Au层的厚度可以为5～20nm，例如10nm，Ag层的厚度为几个微米。\n\n[0053]如图6所示，在具体实施例中，图4中步骤S131进一步包括：\n\n[0054]S1310：去掉基底。\n\n[0055]S1311：刻蚀掉作为牺牲层的第一缓冲层和缓冲层柱体。从而形成中空的ZnO微米管/纳米管结构。\n\n[0056]S1312：将PN结的构成层体翻转，并沉积金属Ti/Au层和ITO层，以得到第二电极。在一应用例中，金属Ti/Au层的厚度为2～5nm，ITO 层的厚度为800～1200nm。\n\n[0057]上述说明中各层的厚度、各层的沉积方式以及金属电极层材料仅为示例，实际应用可根据需要决定。\n\n[0058]在其他实施例中，N型半导体层和P型半导体层材料可以是InGaN、 AlGaInP、GaAlAs或其任一两者之间的组合，但不仅限于此。\n\n[0059]通过上述实施例的实施，在缓冲层柱体外壁依次形成PN结的构成层体后，在PN结的构成层体外侧形成第一电极，且去掉缓冲层柱体后在PN结的构成层体内侧形成第二电极，从而制成具有金属电极与中空的微米管/纳米管结构的微发光二极管。微发光二极管利用中空的几何形貌制备金属电极，有效降了金属电极间的阻抗，从而提高导电率，增加微发光二极管的发光效率；同时，其微米管/纳米管的结构增加了p-n结有效作用面积，增高电流密度，从而有效提高微发光二极管的发光效率，改善微发光二极管单色性。\n\n[0060]如图7所示，本发明微发光二极管制造方法的第二实施例的流程示意图，包括：\n\n[0061]S71：提供一基底。\n\n[0062]S72：在基底上沉积而形成第一缓冲层。\n\n[0063]S73：对第一缓冲层的预定位置进行蚀刻，以在预定位置暴露出基地。\n\n[0064]S74：在基底的预定位置处生长出缓冲层柱体。\n\n[0065]S75：在缓冲层柱体外币生长n-GaN层。\n\n[0066]S76：在n-GaN层上依次形成多重量子阱层、p-GaN层。\n\n[0067]S77：在基底及PN结的构成层体上涂布并固化PI液，将PN结的构成层体的上端的PI液蚀刻掉，暴露出PN结的构成层体。\n\n[0068]S78：在基底及PN结的构成层体上形成第一电极。\n\n[0069]S79：去掉基底，刻蚀掉作为牺牲层的第一缓冲层和缓冲层柱体后，将PN结的构成层体翻转，在PN结的构成层体内侧形成第二电极。\n\n[0070]本实施例中各层的材料、功能、厚度具体可参考本发明微发光二极管制造方法第一实施例中的描述，在此不再重复。其中，各层的厚度、各层的沉积方式以及金属电极层材料仅为示例，实际应用可根据需要决定。在其他实施例中，n型半导体层和p型半导体层材料可以是InGaN、 AlGaInP、GaAlAs或其任一两者之间的组合，但不仅限于此。\n\n[0071]如图8所示，本发明微发光二极管一实施例的结构示意图，包括：第一电极810、第二电极82、PI层83、PN结的构成层体84。\n\n[0072]第二电极82套设于第一电极810；PI层83位于第二电极82的上方，使得第一电极810和第二电极82之间绝缘；PN结的构成层体84填充于第一电极810和第二电极82之间。\n\n[0073]第一电极为沉积的金属Ti/Au层和ITO层；第二电极为金属Ni/Au 层820和Ag层821；PN结的构成层体84进一步包括由内而外依次生长n-GaN层840、多重量子阱层841、p-GaN层842。\n\n[0074]本实施例中各层的材料、功能、厚度具体可参考本发明微发光二极管制造方法第一实施例中的描述，在此不再重复。其中，各层的厚度、大小及位置仅为示意，实际应用可根据需要决定。在其他实施例中，n 型半导体层和p型半导体层材料可以是InGaN、AlGaInP、GaAlAs或其任一两者之间的组合，但不仅限于此。\n\n[0075]如图9所示，本发明微发光二极管显示器一实施例的结构示意图，包括：基板90；设置于基板90上的子像素区域91；设置于子像素区域 91内的微发光二极管92。\n\n[0076]其中，子像素区域91阵列排布；微发光二极管92的结构如图8所示。\n\n[0077]图中子像素区域91和微发光二极管92的大小以及相对位置关系仅为示意，实际应用可根据需要决定。\n\n[0078]在此基础上，以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明书及附图内容所作的等效结构或等效流程变换，例如各实施例之间技术特征的相互结合，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。');
INSERT INTO `os_patent_instruction_text` VALUES (10580, 23634, '[0001]【技术领域】\n\n[0002]本发明涉及平板显示技术领域，特别涉及一种量子点LED背光光源结构及显示装置。\n\n[0003]【背景技术】\n\n[0004]量子点(Quantum Dots)是一些肉眼无法看到的、极其微小的半导体纳米晶体，是一种粒径不足10纳米的颗粒。通常说来，量子点是由锌、镉、硒和硫原子组合而成。量子点有一个与众不同的特性，即每当受到光或电的刺激，量子点便会发出有色光线，光线的颜色由量子点的组成材料和大小形状决定，这一特性使得量子点能够改变光源发出的光线颜色。量子点作为新型的发光材料，具有光色纯度高、发光量子效率高、发光颜色可调、使用寿命长等优点，成为目前新型LED发光材料的研究热点。因此，以量子点发光材料作为发光层的量子点发光二极管(QLED)成为了目前新型LED研究的主要方向，并在照明以及平板显示领域具有广阔的应用前景。\n\n[0005]由于量子点是一种尺寸介于1～100nm之间的纳米材料，量子点荧光材料具有带隙，尺寸可调以及发光光谱半波峰宽小等特点，近年来，量子点材料被广泛地应用在液晶显示器的背光中。在现行的可见光发光量子点材料中，目前已经实现量产的是含Cd的CdSe和不含Cd的InP和CuInS。含Cd的CeSe由于其量产水准可以很容易实现FWHM(半高峰宽)≤30nm。InP和CuInS的FWHM≥35nm，所以含Cd量子点的色域覆盖率更广。另外，最近发展起来的钙钛矿量子点材料(CH3NH3PbX3(X＝Br,I,Cl)以及CsPbX 3等)由于具有很高的发光效率和很窄的FWHM([0006]重要的是，Cd是一种有毒金属，世界各国对消费电子产品中元件中的Cd含量都有明确的规定，美国、欧盟、中国、日本、韩国的RoHS相关法规法令中皆要求Cd浓度小于100PPM,欧盟的RoHS中虽对Cd有豁免条款，但已经于2014年7月到期，该条款的豁免延期目前讨论激烈但仍无定论。所以，在量子点液晶显示器中，如何实现量子点封装LED背光的Cd含量小于100mmp或者使用无Cd材料，又使器件具有较好的光效成为高色域技术的重要发展趋势。\n\n[0007]【发明内容】\n\n[0008]本发明的目的在于提供一种量子点LED背光光源结构及显示装置，以解决现有技术中，量子点封装LED背光的Cd含量大于的100PPM的问题。\n\n[0009]本发明的技术方案如下：\n\n[0010]一种量子点LED背光光源结构，包括：\n\n[0011]反光杯壳，用于安装量子点LED；\n\n[0012]蓝光芯片结构与红光芯片，设于所述反光杯壳内部的底面，所述蓝光芯片结构至少为一个，所述红光芯片至少为一个；\n\n[0013]其中，所述蓝光芯片结构包括蓝光芯片及设在其上的绿光量子点荧光粉层，所述蓝光芯片结构与所述红光芯片共同形成所述量子点LED。\n\n[0014]优选地，所述蓝光芯片与所述绿光量子点荧光粉层之间依次层叠设有胶结层、耐高温聚合物膜层及隔水隔氧层，所述绿光量子点荧光粉层的背向所述蓝光芯片的另一面依次层叠设有所述隔水隔氧层与所述耐高温聚合物膜层。\n\n[0015]优选地，所述蓝光芯片结构与所述红光芯片上均覆盖有防硫化硅胶层，所述防硫化硅胶层上设有隔水隔氧层，所述防硫化硅胶层与所述隔水隔氧层均设于所述反光杯壳的内部。\n\n[0016]优选地，所述蓝光芯片结构上部的所述耐高温聚合物膜层上设有纳米压印徽结构，所述纳米压印徽结构的折射率大于所述防硫化硅胶层的折射率，且小于所述耐高温聚合物膜层的折射率。\n\n[0017]优选地，所述纳米压印徽结构包括多个均匀间隔的微结构，相邻两个所述微结构的间距小于5um。\n\n[0018]优选地，每个所述微结构的竖截面形状为梯形状或三角形状。\n\n[0019]优选地，所述纳米压印徽结构的制作材料为聚甲基丙烯酸甲酯或甲基丙烯酸甲酯与苯乙烯的共聚物。\n\n[0020]优选地，所述隔水隔氧层由吸氧树脂、铁盐类或碳酸盐类吸氧无机材料、铁盐类或碳酸盐类吸水无机材料以及无机纳米材料中的一种或多种材料所组成。\n\n[0021]优选地，所述蓝光芯片与所述红光芯片间隔平行排列在所述反光杯壳内部的底面，且两者的厚度相同。\n\n[0022]一种显示装置，其特征在于，该显示装置包括上述任一项所述的量子点LED背光光源结构。\n\n[0023]本发明的有益效果：\n\n[0024]本发明的一种量子点LED背光光源结构及显示装置，通过在反光杯壳内部的底面设置蓝光芯片结构和红光芯片，并在蓝光芯片上设置绿光量子点荧光粉层，有效地减少了量子点封装LED背光的Cd含量，实现了量子点封装LED背光满足RoHS和高色域覆盖的目标。\n\n[0025]【附图说明】\n\n[0026]图1为本发明实施例的一种量子点LED背光光源结构的整体结构示意图；\n\n[0027]图2为本发明实施例的蓝光芯片结构的整体结构示意图。\n\n[0028]【具体实施方式】\n\n[0029]以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。\n\n[0030]实施例一\n\n[0031]请参考图1和图2，图1为本实施例的一种量子点LED背光光源结构100的整体结构示意图，图2为本实施例的蓝光芯片结构10的整体结构示意图。从图1和图2可以看到：\n\n[0032]本发明的一种量子点LED背光光源结构100，包括：\n\n[0033]反光杯壳30，用于安装量子点LED，该反光杯壳30的内表面设有反光材料，能够将光线集中往反光杯壳30的开口方向平行射出。\n\n[0034]蓝光芯片结构10与红光芯片20，设于所述反光杯壳30内部的底面，所述蓝光芯片结构10至少为一个，所述红光芯片20至少为一个。\n\n[0035]其中，所述蓝光芯片结构10包括蓝光芯片11及设在其上的绿光量子点荧光粉层15，所述蓝光芯片结构10与所述红光芯片20共同形成所述量子点LED。所述蓝光芯片11和红光芯片20都是电致发光的，所述绿光量子点荧光粉层15属于光致发光材料。所述蓝光芯片11发射的蓝色光线可以激发所述绿光量子点荧光粉层15产生绿色光线，使得绿色光线和蓝色光线共同发射出去。\n\n[0036]在本实施例中，所述蓝光芯片11与所述绿光量子点荧光粉层15之间依次层叠设有胶结层12、耐高温聚合物膜层13及隔水隔氧层14，所述绿光量子点荧光粉层15的背向所述蓝光芯片11的另一面依次层叠设有所述隔水隔氧层14与所述耐高温聚合物膜层13。\n\n[0037]在本实施例中，所述蓝光芯片结构10与所述红光芯片20上均覆盖有防硫化硅胶层40，所述防硫化硅胶层40上设有隔水隔氧层14，所述防硫化硅胶层40与所述隔水隔氧层14均设于所述反光杯壳30的内部。\n\n[0038]在本实施例中，所述蓝光芯片结构10上部的所述耐高温聚合物膜层13上设有纳米压印徽结构，所述纳米压印徽结构的折射率大于所述防硫化硅胶层40的折射率，且小于所述耐高温聚合物膜层13的折射率。这样就使得蓝光芯片结构10中的绿光和蓝光从所述耐高温聚合物膜层13射出时，光线与所述耐高温聚合物膜层13的法线夹角变的更小，增大了出光效率。\n\n[0039]在本实施例中，所述纳米压印徽结构包括多个均匀间隔的微结构16，相邻两个所述微结构16的间距小于5um。\n\n[0040]在本实施例中，每个所述微结构16的竖截面形状为梯形状或三角形状。\n\n[0041]在本实施例中，所述纳米压印徽结构的制作材料为聚甲基丙烯酸甲酯或甲基丙烯酸甲酯与苯乙烯的共聚物，这两种材料都有助于提高光线的出光效率。\n\n[0042]在本实施例中，所述隔水隔氧层14由吸氧树脂、铁盐类或碳酸盐类吸氧无机材料、铁盐类或碳酸盐类吸水无机材料以及无机纳米材料中的一种或多种材料所组成。\n\n[0043]在本实施例中，所述蓝光芯片11与所述红光芯片20间隔平行排列在所述反光杯壳30内部的底面，且两者的厚度相同，这种设计可以使得蓝光芯片11和红光芯片20产生的光量大致相同。\n\n[0044]本发明的一种量子点LED背光光源结构100，通过在反光杯壳30内部的底面设置蓝光芯片结构10和红光芯片20，并在蓝光芯片11上设置绿光量子点荧光粉层15，由于没有像现有技术那样在蓝光芯片11上同时设置绿光量子点荧光粉层15和红光量子点荧光粉层，没有红光量子点荧光粉层吸收绿光量子点荧光粉层15产生的绿光，因此绿光量子点荧光粉层15没有受到损耗，不需要补充绿光量子点荧光粉，因此没有增加Cd含量，这就有效地减少了量子点封装LED背光的Cd含量，实现了量子点封装结构满足RoHS和高色域覆盖的目标。另外，本发明在蓝光芯片结构10上部的耐高温聚合物膜层13上设置有纳米压印微结构，该纳米压印徽结构的折射率大于所述防硫化硅胶层40的折射率，且小于所述耐高温聚合物膜层13的折射率，有效地提高了蓝光芯片结构10的蓝光和绿光的出光效率。\n\n[0045]实施例二\n\n[0046]本实施例的一种显示装置，其包括实施例一所述的量子点LED背光光源结构100，该量子点LED背光光源结构100已经在实施例一中进行了详细的说明，在此不再重复说明。\n\n[0047]本发明的一种显示装置，通过在反光杯壳30内部的底面设置蓝光芯片结构10和红光芯片20，并在蓝光芯片11上设置绿光量子点荧光粉层15，由于没有像现有技术那样在蓝光芯片11上同时设置绿光量子点荧光粉层15和红光量子点荧光粉层，没有红光量子点荧光粉层吸收绿光量子点荧光粉层15产生的绿光，因此绿光量子点荧光粉层15没有收到损耗，不需要补充绿光量子点荧光粉，因此没有增加Cd含量，这就有效地减少了量子点封装LED背光的Cd含量，实现了量子点封装结构满足RoHS和高色域覆盖的目标。另外，本发明在蓝光芯片结构10上部的耐高温聚合物膜层13上设置有纳米压印微结构，该纳米压印徽结构的折射率大于所述防硫化硅胶层40的折射率，且小于所述耐高温聚合物膜层13的折射率，有效地提高了蓝光芯片结构10的蓝光和绿光的出光效率。\n\n[0048]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '[0001]【技术领域】\n\n[0002]本发明涉及平板显示技术领域，特别涉及一种量子点LED背光光源结构及显示装置。\n\n[0003]【背景技术】\n\n[0004]量子点(Quantum Dots)是一些肉眼无法看到的、极其微小的半导体纳米晶体，是一种粒径不足10纳米的颗粒。通常说来，量子点是由锌、镉、硒和硫原子组合而成。量子点有一个与众不同的特性，即每当受到光或电的刺激，量子点便会发出有色光线，光线的颜色由量子点的组成材料和大小形状决定，这一特性使得量子点能够改变光源发出的光线颜色。量子点作为新型的发光材料，具有光色纯度高、发光量子效率高、发光颜色可调、使用寿命长等优点，成为目前新型LED发光材料的研究热点。因此，以量子点发光材料作为发光层的量子点发光二极管(QLED)成为了目前新型LED研究的主要方向，并在照明以及平板显示领域具有广阔的应用前景。\n\n[0005]由于量子点是一种尺寸介于1～100nm之间的纳米材料，量子点荧光材料具有带隙，尺寸可调以及发光光谱半波峰宽小等特点，近年来，量子点材料被广泛地应用在液晶显示器的背光中。在现行的可见光发光量子点材料中，目前已经实现量产的是含Cd的CdSe和不含Cd的InP和CuInS。含Cd的CeSe由于其量产水准可以很容易实现FWHM(半高峰宽)≤30nm。InP和CuInS的FWHM≥35nm，所以含Cd量子点的色域覆盖率更广。另外，最近发展起来的钙钛矿量子点材料(CH3NH3PbX3(X＝Br,I,Cl)以及CsPbX 3等)由于具有很高的发光效率和很窄的FWHM([0006]重要的是，Cd是一种有毒金属，世界各国对消费电子产品中元件中的Cd含量都有明确的规定，美国、欧盟、中国、日本、韩国的RoHS相关法规法令中皆要求Cd浓度小于100PPM,欧盟的RoHS中虽对Cd有豁免条款，但已经于2014年7月到期，该条款的豁免延期目前讨论激烈但仍无定论。所以，在量子点液晶显示器中，如何实现量子点封装LED背光的Cd含量小于100mmp或者使用无Cd材料，又使器件具有较好的光效成为高色域技术的重要发展趋势。\n\n[0007]【发明内容】\n\n[0008]本发明的目的在于提供一种量子点LED背光光源结构及显示装置，以解决现有技术中，量子点封装LED背光的Cd含量大于的100PPM的问题。\n\n[0009]本发明的技术方案如下：\n\n[0010]一种量子点LED背光光源结构，包括：\n\n[0011]反光杯壳，用于安装量子点LED；\n\n[0012]蓝光芯片结构与红光芯片，设于所述反光杯壳内部的底面，所述蓝光芯片结构至少为一个，所述红光芯片至少为一个；\n\n[0013]其中，所述蓝光芯片结构包括蓝光芯片及设在其上的绿光量子点荧光粉层，所述蓝光芯片结构与所述红光芯片共同形成所述量子点LED。\n\n[0014]优选地，所述蓝光芯片与所述绿光量子点荧光粉层之间依次层叠设有胶结层、耐高温聚合物膜层及隔水隔氧层，所述绿光量子点荧光粉层的背向所述蓝光芯片的另一面依次层叠设有所述隔水隔氧层与所述耐高温聚合物膜层。\n\n[0015]优选地，所述蓝光芯片结构与所述红光芯片上均覆盖有防硫化硅胶层，所述防硫化硅胶层上设有隔水隔氧层，所述防硫化硅胶层与所述隔水隔氧层均设于所述反光杯壳的内部。\n\n[0016]优选地，所述蓝光芯片结构上部的所述耐高温聚合物膜层上设有纳米压印徽结构，所述纳米压印徽结构的折射率大于所述防硫化硅胶层的折射率，且小于所述耐高温聚合物膜层的折射率。\n\n[0017]优选地，所述纳米压印徽结构包括多个均匀间隔的微结构，相邻两个所述微结构的间距小于5um。\n\n[0018]优选地，每个所述微结构的竖截面形状为梯形状或三角形状。\n\n[0019]优选地，所述纳米压印徽结构的制作材料为聚甲基丙烯酸甲酯或甲基丙烯酸甲酯与苯乙烯的共聚物。\n\n[0020]优选地，所述隔水隔氧层由吸氧树脂、铁盐类或碳酸盐类吸氧无机材料、铁盐类或碳酸盐类吸水无机材料以及无机纳米材料中的一种或多种材料所组成。\n\n[0021]优选地，所述蓝光芯片与所述红光芯片间隔平行排列在所述反光杯壳内部的底面，且两者的厚度相同。\n\n[0022]一种显示装置，其特征在于，该显示装置包括上述任一项所述的量子点LED背光光源结构。\n\n[0023]本发明的有益效果：\n\n[0024]本发明的一种量子点LED背光光源结构及显示装置，通过在反光杯壳内部的底面设置蓝光芯片结构和红光芯片，并在蓝光芯片上设置绿光量子点荧光粉层，有效地减少了量子点封装LED背光的Cd含量，实现了量子点封装LED背光满足RoHS和高色域覆盖的目标。\n\n[0025]【附图说明】\n\n[0026]图1为本发明实施例的一种量子点LED背光光源结构的整体结构示意图；\n\n[0027]图2为本发明实施例的蓝光芯片结构的整体结构示意图。\n\n[0028]【具体实施方式】\n\n[0029]以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。\n\n[0030]实施例一\n\n[0031]请参考图1和图2，图1为本实施例的一种量子点LED背光光源结构100的整体结构示意图，图2为本实施例的蓝光芯片结构10的整体结构示意图。从图1和图2可以看到：\n\n[0032]本发明的一种量子点LED背光光源结构100，包括：\n\n[0033]反光杯壳30，用于安装量子点LED，该反光杯壳30的内表面设有反光材料，能够将光线集中往反光杯壳30的开口方向平行射出。\n\n[0034]蓝光芯片结构10与红光芯片20，设于所述反光杯壳30内部的底面，所述蓝光芯片结构10至少为一个，所述红光芯片20至少为一个。\n\n[0035]其中，所述蓝光芯片结构10包括蓝光芯片11及设在其上的绿光量子点荧光粉层15，所述蓝光芯片结构10与所述红光芯片20共同形成所述量子点LED。所述蓝光芯片11和红光芯片20都是电致发光的，所述绿光量子点荧光粉层15属于光致发光材料。所述蓝光芯片11发射的蓝色光线可以激发所述绿光量子点荧光粉层15产生绿色光线，使得绿色光线和蓝色光线共同发射出去。\n\n[0036]在本实施例中，所述蓝光芯片11与所述绿光量子点荧光粉层15之间依次层叠设有胶结层12、耐高温聚合物膜层13及隔水隔氧层14，所述绿光量子点荧光粉层15的背向所述蓝光芯片11的另一面依次层叠设有所述隔水隔氧层14与所述耐高温聚合物膜层13。\n\n[0037]在本实施例中，所述蓝光芯片结构10与所述红光芯片20上均覆盖有防硫化硅胶层40，所述防硫化硅胶层40上设有隔水隔氧层14，所述防硫化硅胶层40与所述隔水隔氧层14均设于所述反光杯壳30的内部。\n\n[0038]在本实施例中，所述蓝光芯片结构10上部的所述耐高温聚合物膜层13上设有纳米压印徽结构，所述纳米压印徽结构的折射率大于所述防硫化硅胶层40的折射率，且小于所述耐高温聚合物膜层13的折射率。这样就使得蓝光芯片结构10中的绿光和蓝光从所述耐高温聚合物膜层13射出时，光线与所述耐高温聚合物膜层13的法线夹角变的更小，增大了出光效率。\n\n[0039]在本实施例中，所述纳米压印徽结构包括多个均匀间隔的微结构16，相邻两个所述微结构16的间距小于5um。\n\n[0040]在本实施例中，每个所述微结构16的竖截面形状为梯形状或三角形状。\n\n[0041]在本实施例中，所述纳米压印徽结构的制作材料为聚甲基丙烯酸甲酯或甲基丙烯酸甲酯与苯乙烯的共聚物，这两种材料都有助于提高光线的出光效率。\n\n[0042]在本实施例中，所述隔水隔氧层14由吸氧树脂、铁盐类或碳酸盐类吸氧无机材料、铁盐类或碳酸盐类吸水无机材料以及无机纳米材料中的一种或多种材料所组成。\n\n[0043]在本实施例中，所述蓝光芯片11与所述红光芯片20间隔平行排列在所述反光杯壳30内部的底面，且两者的厚度相同，这种设计可以使得蓝光芯片11和红光芯片20产生的光量大致相同。\n\n[0044]本发明的一种量子点LED背光光源结构100，通过在反光杯壳30内部的底面设置蓝光芯片结构10和红光芯片20，并在蓝光芯片11上设置绿光量子点荧光粉层15，由于没有像现有技术那样在蓝光芯片11上同时设置绿光量子点荧光粉层15和红光量子点荧光粉层，没有红光量子点荧光粉层吸收绿光量子点荧光粉层15产生的绿光，因此绿光量子点荧光粉层15没有受到损耗，不需要补充绿光量子点荧光粉，因此没有增加Cd含量，这就有效地减少了量子点封装LED背光的Cd含量，实现了量子点封装结构满足RoHS和高色域覆盖的目标。另外，本发明在蓝光芯片结构10上部的耐高温聚合物膜层13上设置有纳米压印微结构，该纳米压印徽结构的折射率大于所述防硫化硅胶层40的折射率，且小于所述耐高温聚合物膜层13的折射率，有效地提高了蓝光芯片结构10的蓝光和绿光的出光效率。\n\n[0045]实施例二\n\n[0046]本实施例的一种显示装置，其包括实施例一所述的量子点LED背光光源结构100，该量子点LED背光光源结构100已经在实施例一中进行了详细的说明，在此不再重复说明。\n\n[0047]本发明的一种显示装置，通过在反光杯壳30内部的底面设置蓝光芯片结构10和红光芯片20，并在蓝光芯片11上设置绿光量子点荧光粉层15，由于没有像现有技术那样在蓝光芯片11上同时设置绿光量子点荧光粉层15和红光量子点荧光粉层，没有红光量子点荧光粉层吸收绿光量子点荧光粉层15产生的绿光，因此绿光量子点荧光粉层15没有收到损耗，不需要补充绿光量子点荧光粉，因此没有增加Cd含量，这就有效地减少了量子点封装LED背光的Cd含量，实现了量子点封装结构满足RoHS和高色域覆盖的目标。另外，本发明在蓝光芯片结构10上部的耐高温聚合物膜层13上设置有纳米压印微结构，该纳米压印徽结构的折射率大于所述防硫化硅胶层40的折射率，且小于所述耐高温聚合物膜层13的折射率，有效地提高了蓝光芯片结构10的蓝光和绿光的出光效率。\n\n[0048]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10581, 23635, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管显示面板及其修复方法。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED，μLED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，μLED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但μLED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]微转印(Micro Transfer Printing)技术是目前制备μLED显示装置的主流方法，具体制备过程为：首先在蓝宝石类基板生长出微发光二极管，然后通过激光剥离技术(Laser lift-off，LLO)将微发光二极管裸芯片(bare chip)从蓝宝石类基板上分离开，随后使用一个图案化的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)传送头将微发光二极管裸芯片从蓝宝石类基板吸附起来，并将PDMS传送头与接收基板进行对位，随后将PDMS传送头所吸附的微发光二极管裸芯片贴附到接收基板上预设的位置，再剥离PDMS传送头，即可完成将微发光二极管裸芯片转移到接收基板上，进而制得μLED显示装置。\n\n[0005]请参阅图1，为现有的微发光二极管显示面板的剖面图，包括：基板100、设于所述基板100上的栅极200、设于所述栅极200以及基板100上的栅极绝缘层300、设于所述栅极200上的栅极绝缘层300上的有源层400、设于所述有源层400以及栅极绝缘层300上的层间绝缘层500、设于所述层间绝缘层500上的间隔分布并分别与所述有源层400的两端接触的源极601和漏极602、设于所述源极601、漏极602、以及层间绝缘层500上的平坦层700、设于所述平坦层700上并与所述漏极602电性连接的阳极800、设于所述阳极800四周边缘以及所述平坦层700上的像素定义层900、设于所述阳极800上的阴极隔离层1200、设于所述阳极800上并嵌入所述阴极隔离层1200中的多个微发光二极管1000、以及设于所述像素定义层900、阴极隔离层1200与多个微发光二极管1000上的阴极1100。如图2所示，现有的微发光二极管显示面板中阳极800为一个整体，数个微发光二极管1000依次排列于阳极800上，当其中一颗微发光二极管1000损坏需要修复时，需要将阳极800与漏极602之间的通路切断进行修复，切断点位于图2以及图1中的打叉的位置，修复后其他的正常的微发光二极管1000也无法发光，整个像素均变成了暗点，造成了资源的浪费，降低了显示品质。\n\n发明内容\n\n[0006]本发明的目的在于提供一种微发光二极管显示面板，能够简化微发光二极管显示面板的修复过程，提升微发光二极管显示面板的修复的成功率，保证微发光二极管显示面板的修复效果。\n\n[0007]本发明的目的还在于提供一种微发光二极管显示面板的修复方法，能够简化微发光二极管显示面板的修复过程，提升微发光二极管显示面板的修复的成功率，保证微发光二极管显示面板的修复效果。\n\n[0008]为实现上述目的，本发明提供了一种微发光二极管显示面板，包括：基板、以及设于所述基板上阵列排布的多个像素单元；\n\n[0009]每一个像素单元均包括：设于所述基板上的TFT层、设于所述TFT层上的平坦化层、设于所述平坦化层上并与所述TFT层电性连接的阳极、设于所述阳极的四周边缘以及平坦化层上的像素定义层、设于所述阳极上的阴极隔离层、设于所述阳极上并嵌入所述阴极隔离层中的多个微发光二极管、以及设于所述像素定义层、阴极隔离层与多个微发光二极管上的阴极；\n\n[0010]所述阳极包括：与所述TFT层电性连接的阳极电位输入板、与阳极电位输入板间隔分布的多个电极板、以及与电极板电性连接的多条连接线；\n\n[0011]所述微发光二极管与所述电极板数量相同，每一个电极板上设置一个微发光二极管；\n\n[0012]所述阳极电位输入板通过连接线与至少两个电极板电性连接，每一个电极板通过连接线与至少两个其他的电极板电性连接或者与至少一个其他的电极板以及阳极电位输入板电性连接。\n\n[0013]每一个像素单元包括三个微发光二极管和三个电极板，其中两个电极板均通过两连接线分别与另一个电极板以及阳极电位输入板电性连接。\n\n[0014]所述另一个电极板还通过一连接线与所述阳极电位输入板电性连接。\n\n[0015]所述TFT层包括：设于所述基板上的栅极、设于所述栅极以及基板上的栅极绝缘层、设于所述栅极上的栅极绝缘层上的有源层、设于所述有源层以及栅极绝缘层上的层间绝缘层、以及间隔分布于所述层间绝缘层上并分别通过贯穿所述层间绝缘层的第一过孔及第二过孔与所述有源层的两端接触的源极和漏极。\n\n[0016]所述阳极电位输入板通过一贯穿所述平坦化层的第三过孔与所述漏极接触。\n\n[0017]本发明还提供一种微发光二极管显示面板的修复方法，包括如下步骤：\n\n[0018]步骤S1、提供一微发光二极管显示面板，所述微发光二极管显示面板包括：基板、以及设于所述基板上阵列排布的多个像素单元；\n\n[0019]每一个像素单元均包括：设于所述基板上的TFT层、设于所述TFT层上的平坦化层、设于所述平坦化层并与所述TFT层电性连接的阳极、设于所述阳极的四周边缘以及平坦化层上的像素定义层、设于所述阳极上的阴极隔离层、设于所述阳极上并嵌入所述阴极隔离层中的多个微发光二极管、以及设于所述像素定义层、阴极隔离层与多个微发光二极管上的阴极；\n\n[0020]所述阳极包括：与所述TFT层电性连接的阳极电位输入板、与阳极电位输入板间隔分布的多个电极板、以及与电极板电性连接的多条连接线；\n\n[0021]所述微发光二极管与所述电极板数量相同，每一个电极板上设置一个微发光二极管；\n\n[0022]所述阳极电位输入板通过连接线与至少两个电极板电性连接，每一个电极板通过连接线与至少两个其他的电极板电性连接或者与至少一个其他的电极板以及阳极电位输入板电性连接；\n\n[0023]步骤S2、检测到多个微发光二极管中的一个出现不良，确定该出现不良的微发光二极管的位置；\n\n[0024]步骤S3、将与设置该出现不良的微发光二极管的电极板电性连接的连接线全部切断，将该出现不良的微发光二极管单独修复成暗点。\n\n[0025]每一个像素单元包括三个微发光二极管和三个电极板，其中两个电极板均通过两连接线分别与另一个电极板以及阳极电位输入板电性连接。\n\n[0026]所述另一个电极板还通过一连接线与所述阳极电位输入板电性连接。\n\n[0027]所述TFT层包括：设于所述基板上的栅极、设于所述栅极以及基板上的栅极绝缘层、设于所述栅极上的栅极绝缘层上的有源层、设于所述有源层以及栅极绝缘层上的层间绝缘层、以及间隔分布于所述层间绝缘层上并分别通过贯穿所述层间绝缘层的第一及第二过孔过孔与所述有源层的两端接触的源极和漏极。\n\n[0028]所述阳极电位输入板通过一贯穿所述平坦化层的第三过孔与所述漏极接触。\n\n[0029]本发明的有益效果：本发明提供的一种微发光二极管显示面板，该微发光二极管显示面板的阳极被划分为多个相互间隔的电极块，各个电极块通过连接线电性连接成一体，每一个电极块上对应设置一个微发光二极管，当其中一个微发光二极管出现不良时，可通过切断与设置该微发光二极管的电极板电性连接的连接线，将该微发光二极管单独修复为暗点，其他微发光二极管正常发光，能够简化微发光二极管显示面板的修复过程，提升微发光二极管显示面板的修复的成功率，保证微发光二极管显示面板的修复效果。本发明提供的一种微发光二极管显示面板的修复方法，能够简化微发光二极管显示面板的修复过程，提升微发光二极管显示面板的修复的成功率，保证微发光二极管显示面板的修复效果。\n\n附图说明\n\n[0030]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0031]附图中，\n\n[0032]图1为现有的微发光二极管显示面板的剖面图；\n\n[0033]图2为现有的微发光二极管显示面板的阳极俯视图；。\n\n[0034]图3为本发明的微发光二极管显示面板的剖面图；\n\n[0035]图4为本发明的微发光二极管显示面板的第一实施例的阳极俯视图；\n\n[0036]图5为本发明的微发光二极管显示面板的第二实施例的阳极俯视图；\n\n[0037]图6为本发明的微发光二极管显示面板的第三实施例的阳极俯视图；\n\n[0038]图7为本发明的微发光二极管显示面板的第四实施例的阳极俯视图；\n\n[0039]图8为本发明的微发光二极管显示面板的修复方法的流程图。\n\n具体实施方式\n\n[0040]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0041]请参阅图3，本发明提供一种微发光二极管显示面板，包括：基板1、以及设于所述基板1上阵列排布的多个像素单元2；\n\n[0042]每一个像素单元2均包括：设于所述基板1上的TFT层21、设于所述TFT层21上的平坦化层22、设于所述平坦化层22上并与所述TFT层21电性连接的阳极23、设于所述阳极23的四周边缘以及平坦化层22上的像素定义层24、设于所述阳极23上的阴极隔离层26、设于所述阳极23上并嵌入所述阴极隔离层26中的多个微发光二极管25、以及设于所述像素定义层24、阴极隔离层26与多个微发光二极管25上的阴极27；\n\n[0043]所述阳极23包括：与所述TFT层21电性连接的阳极电位输入板231、与阳极电位输入板231间隔分布的多个电极板232、以及与电极板232电性连接的多条连接线233；\n\n[0044]所述微发光二极管25与所述电极板232数量相同，每一个电极板232上设置一个微发光二极管25；\n\n[0045]所述阳极电位输入板231通过连接线233与至少两个电极板232电性连接，每一个电极板232通过连接线233与至少两个其他的电极板232电性连接或者与至少一个其他的电极板232以及阳极电位输入板231电性连接。\n\n[0046]具体地，如图4所示，在本发明的第一实施例中，每一个像素单元2包括三个微发光二极管25和三个电极板232，其中两个电极板232均通过两连接线233分别与另一个电极板232以及阳极电位输入板231电性连接，当其中任意一个微发光二极管25出现不良时，只要将与设置该微发光二极管25的电极板232电性连接的两连接线233进行切断即可将该微发光二极管25修复为暗点，而剩余的两个微发光二极管25仍可从阳极电位输入板231正常获取阳极电位信号，正常发光。\n\n[0047]具体地，如图5所示，图5为本发明的第二实施例，其与第一实施例的区别在于，所述另一个电极板232还通过一连接线233与所述阳极电位输入板231电性连接，也就是说三个电极板232均与所述阳极电位输入板231电性连接，此时，比第一实施例更优的是，当出现其中任意两个微发光二极管25均不良时，仍可以通过将与设置该两个微发光二极管25的两个电极板232电性连接的四连接线233进行切断实现将该两个微发光二极管25修复为暗点，并且剩余的一个微发光二极管25仍可从阳极电位输入板231正常获取阳极电位信号。\n\n[0048]具体地，请参阅图6，图6为本发明的第三实施例，每一个像素单元2包括八个微发光二极管25和八个电极板232，该八个电极板232与阳极电位输入板231呈3行3列矩阵排列，外围的七个电极板232与阳极电位输入板231依次串联到一起，中间的一个电极板232通过两连接线233分别与所述阳极电位输入板231以及一外围的电极板232电性连接。此外，图7为本发明的第四实施例，第四实施例为对第三实施例的改进，其中间的一个电极板232通过四连接线233分别与所述阳极电位输入板231以及三个外围的电极板232电性连接，第三实施例可以实现对任意一个微发光二极管25进行单独修复且不影响其他微发光二极管25正常发光，第四实施例可以实现对任意一个或两个微发光二极管25进行单独修复且不影响其他微发光二极管25正常发光。\n\n[0049]可以理解的是，本发明还可以包括其他的电极板排列方式与其他的连接方式，只要所述阳极电位输入板231通过连接线233与至少两个电极板232电性连接，每一个电极板232通过连接线233与至少两个其他的电极板232电性连接或者与至少一个其他的电极板232以及阳极电位输入板231电性连接，就能够实现本发明的对微发光二极管进行单独修复的目的，这不会影响本发明的实现。\n\n[0050]具体地，所述TFT层21包括：设于所述基板1上的栅极211、设于所述栅极211以及基板1上的栅极绝缘层212、设于所述栅极211上的栅极绝缘层212上的有源层213、设于所述有源层213以及栅极绝缘层212上的层间绝缘层214、以及间隔分布于所述层间绝缘层214上并分别通过贯穿所述层间绝缘层214的第一过孔2141及第二过孔2142与所述有源层213的两端接触的源极215和漏极216。所述阳极电位输入板231通过一贯穿所述平坦化层22的第三过孔221与所述漏极216接触。\n\n[0051]请参阅图8，基于上述的微发光二极管显示面板，本发明还提供一种微发光二极管显示面板的修复方法，包括如下步骤：\n\n[0052]步骤S1、提供一本发明的微发光二极管显示面板，具体结构如上述，此处不再赘述。\n\n[0053]步骤S2、检测到多个微发光二极管25中的一个出现不良，确定该出现不良的微发光二极管25的位置。\n\n[0054]步骤S3、将与设置该出现不良的微发光二极管25的电极板232电性连接的连接线233全部切断，将该出现不良的微发光二极管25单独修复成暗点。\n\n[0055]具体地，所述步骤S3通过镭射切割工艺切断所述连接线233，具体的切断点可以为如图4至图7中打叉的位置。\n\n[0056]具体地，如图4所示，在本发明的第一实施例中，每一个像素单元2包括三个微发光二极管25和三个电极板232，其中两个电极板232均通过两连接线233分别与另一个电极板232以及阳极电位输入板231电性连接，当其中任意一个微发光二极管25出现不良时，只要将与设置该微发光二极管25的电极板232电性连接的两连接线233进行切断即可将该微发光二极管25修复为暗点，而剩余的两个微发光二极管25仍可从阳极电位输入板231正常获取阳极电位信号，正常发光。例如图4中，中间一个微发光二极管25出现不良，只将与设置该微发光二极管25的电极板232电性连接的两连接线233切断即可，切断点可以为如图4中打叉的位置。\n\n[0057]具体地，如图5所示，图5为本发明的第二实施例，其与第一实施例的区别在于，所述另一个电极板232还通过一连接线233与所述阳极电位输入板231电性连接，也就是说三个电极板232均与所述阳极电位输入板231电性连接，此时，比第一实施例更优的是，当出现其中任意两个微发光二极管25均不良时，仍可以通过将与设置该两个微发光二极管25的两个电极板232电性连接的四连接线233进行切断实现将该两个微发光二极管25修复为暗点，并且剩余的一个微发光二极管25仍可从阳极电位输入板231正常获取阳极电位信号。例如图5中，中间一个微发光二极管25出现不良，只将与设置该微发光二极管25的电极板232电性连接的三条连接线233切断即可，切断点可以为如图5中打叉的位置。\n\n[0058]具体地，请参阅图6，图6为本发明的第三实施例，每一个像素单元2包括八个微发光二极管25和八个电极板232，该八个电极板232与阳极电位输入板231呈3行3列矩阵排列，外围的七个电极板232与阳极电位输入板231依次串联到一起，中间的一个电极板232通过两连接线233分别与所述阳极电位输入板231以及一外围的电极板232电性连接。此外，图7为本发明的第四实施例，第四实施例为对第三实施例的改进，其中间的一个电极板232通过四连接线233分别与所述阳极电位输入板231以及三个外围的电极板232电性连接，第三实施例可以实现对任意一个微发光二极管25进行单独修复且不影响其他微发光二极管25正常发光，第四实施例可以实现对任意一个或两个微发光二极管25进行单独修复且不影响其他微发光二极管25正常发光。\n\n[0059]可以理解的是，本发明还可以包括其他的电极板排列方式与其他的连接方式，只要所述阳极电位输入板231通过连接线233与至少两个电极板232电性连接，每一个电极板232通过连接线233与至少两个其他的电极板232电性连接或者与至少一个其他的电极板232以及阳极电位输入板231电性连接，就能够实现本发明的对微发光二极管进行单独修复的目的，这不会影响本发明的实现。\n\n[0060]需要说明的是，本发明通过将阳极被划分为多个相互间隔的电极块，各个电极块通过连接线电性连接成一体，不仅可以实现任意一个微发光二极管25进行单独修复且不影响其他微发光二极管25正常发光，而且可以清晰的找出应该进行镭射切割的区域，便于修复时的定位，保证修复效果。\n\n[0061]综上所述，本发明提供的微发光二极管显示面板，该微发光二极管显示面板的阳极被划分为多个相互间隔的电极块，各个电极块通过连接线电性连接成一体，每一个电极块上对应设置一个微发光二极管，当其中一个微发光二极管出现不良时，可通过切断与设置该微发光二极管的电极板电性连接的连接线，将该微发光二极管单独修复为暗点，其他微发光二极管正常发光，能够简化微发光二极管显示面板的修复过程，提升微发光二极管显示面板的修复的成功率，保证微发光二极管显示面板的修复效果。本发明提供的微发光二极管显示面板的修复方法，能够简化微发光二极管显示面板的修复过程，提升微发光二极管显示面板的修复的成功率，保证微发光二极管显示面板的修复效果。\n\n[0062]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管显示面板及其修复方法。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED，μLED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，μLED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但μLED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]微转印(Micro Transfer Printing)技术是目前制备μLED显示装置的主流方法，具体制备过程为：首先在蓝宝石类基板生长出微发光二极管，然后通过激光剥离技术(Laser lift-off，LLO)将微发光二极管裸芯片(bare chip)从蓝宝石类基板上分离开，随后使用一个图案化的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)传送头将微发光二极管裸芯片从蓝宝石类基板吸附起来，并将PDMS传送头与接收基板进行对位，随后将PDMS传送头所吸附的微发光二极管裸芯片贴附到接收基板上预设的位置，再剥离PDMS传送头，即可完成将微发光二极管裸芯片转移到接收基板上，进而制得μLED显示装置。\n\n[0005]请参阅图1，为现有的微发光二极管显示面板的剖面图，包括：基板100、设于所述基板100上的栅极200、设于所述栅极200以及基板100上的栅极绝缘层300、设于所述栅极200上的栅极绝缘层300上的有源层400、设于所述有源层400以及栅极绝缘层300上的层间绝缘层500、设于所述层间绝缘层500上的间隔分布并分别与所述有源层400的两端接触的源极601和漏极602、设于所述源极601、漏极602、以及层间绝缘层500上的平坦层700、设于所述平坦层700上并与所述漏极602电性连接的阳极800、设于所述阳极800四周边缘以及所述平坦层700上的像素定义层900、设于所述阳极800上的阴极隔离层1200、设于所述阳极800上并嵌入所述阴极隔离层1200中的多个微发光二极管1000、以及设于所述像素定义层900、阴极隔离层1200与多个微发光二极管1000上的阴极1100。如图2所示，现有的微发光二极管显示面板中阳极800为一个整体，数个微发光二极管1000依次排列于阳极800上，当其中一颗微发光二极管1000损坏需要修复时，需要将阳极800与漏极602之间的通路切断进行修复，切断点位于图2以及图1中的打叉的位置，修复后其他的正常的微发光二极管1000也无法发光，整个像素均变成了暗点，造成了资源的浪费，降低了显示品质。\n\n发明内容\n\n[0006]本发明的目的在于提供一种微发光二极管显示面板，能够简化微发光二极管显示面板的修复过程，提升微发光二极管显示面板的修复的成功率，保证微发光二极管显示面板的修复效果。\n\n[0007]本发明的目的还在于提供一种微发光二极管显示面板的修复方法，能够简化微发光二极管显示面板的修复过程，提升微发光二极管显示面板的修复的成功率，保证微发光二极管显示面板的修复效果。\n\n[0008]为实现上述目的，本发明提供了一种微发光二极管显示面板，包括：基板、以及设于所述基板上阵列排布的多个像素单元；\n\n[0009]每一个像素单元均包括：设于所述基板上的TFT层、设于所述TFT层上的平坦化层、设于所述平坦化层上并与所述TFT层电性连接的阳极、设于所述阳极的四周边缘以及平坦化层上的像素定义层、设于所述阳极上的阴极隔离层、设于所述阳极上并嵌入所述阴极隔离层中的多个微发光二极管、以及设于所述像素定义层、阴极隔离层与多个微发光二极管上的阴极；\n\n[0010]所述阳极包括：与所述TFT层电性连接的阳极电位输入板、与阳极电位输入板间隔分布的多个电极板、以及与电极板电性连接的多条连接线；\n\n[0011]所述微发光二极管与所述电极板数量相同，每一个电极板上设置一个微发光二极管；\n\n[0012]所述阳极电位输入板通过连接线与至少两个电极板电性连接，每一个电极板通过连接线与至少两个其他的电极板电性连接或者与至少一个其他的电极板以及阳极电位输入板电性连接。\n\n[0013]每一个像素单元包括三个微发光二极管和三个电极板，其中两个电极板均通过两连接线分别与另一个电极板以及阳极电位输入板电性连接。\n\n[0014]所述另一个电极板还通过一连接线与所述阳极电位输入板电性连接。\n\n[0015]所述TFT层包括：设于所述基板上的栅极、设于所述栅极以及基板上的栅极绝缘层、设于所述栅极上的栅极绝缘层上的有源层、设于所述有源层以及栅极绝缘层上的层间绝缘层、以及间隔分布于所述层间绝缘层上并分别通过贯穿所述层间绝缘层的第一过孔及第二过孔与所述有源层的两端接触的源极和漏极。\n\n[0016]所述阳极电位输入板通过一贯穿所述平坦化层的第三过孔与所述漏极接触。\n\n[0017]本发明还提供一种微发光二极管显示面板的修复方法，包括如下步骤：\n\n[0018]步骤S1、提供一微发光二极管显示面板，所述微发光二极管显示面板包括：基板、以及设于所述基板上阵列排布的多个像素单元；\n\n[0019]每一个像素单元均包括：设于所述基板上的TFT层、设于所述TFT层上的平坦化层、设于所述平坦化层并与所述TFT层电性连接的阳极、设于所述阳极的四周边缘以及平坦化层上的像素定义层、设于所述阳极上的阴极隔离层、设于所述阳极上并嵌入所述阴极隔离层中的多个微发光二极管、以及设于所述像素定义层、阴极隔离层与多个微发光二极管上的阴极；\n\n[0020]所述阳极包括：与所述TFT层电性连接的阳极电位输入板、与阳极电位输入板间隔分布的多个电极板、以及与电极板电性连接的多条连接线；\n\n[0021]所述微发光二极管与所述电极板数量相同，每一个电极板上设置一个微发光二极管；\n\n[0022]所述阳极电位输入板通过连接线与至少两个电极板电性连接，每一个电极板通过连接线与至少两个其他的电极板电性连接或者与至少一个其他的电极板以及阳极电位输入板电性连接；\n\n[0023]步骤S2、检测到多个微发光二极管中的一个出现不良，确定该出现不良的微发光二极管的位置；\n\n[0024]步骤S3、将与设置该出现不良的微发光二极管的电极板电性连接的连接线全部切断，将该出现不良的微发光二极管单独修复成暗点。\n\n[0025]每一个像素单元包括三个微发光二极管和三个电极板，其中两个电极板均通过两连接线分别与另一个电极板以及阳极电位输入板电性连接。\n\n[0026]所述另一个电极板还通过一连接线与所述阳极电位输入板电性连接。\n\n[0027]所述TFT层包括：设于所述基板上的栅极、设于所述栅极以及基板上的栅极绝缘层、设于所述栅极上的栅极绝缘层上的有源层、设于所述有源层以及栅极绝缘层上的层间绝缘层、以及间隔分布于所述层间绝缘层上并分别通过贯穿所述层间绝缘层的第一及第二过孔过孔与所述有源层的两端接触的源极和漏极。\n\n[0028]所述阳极电位输入板通过一贯穿所述平坦化层的第三过孔与所述漏极接触。\n\n[0029]本发明的有益效果：本发明提供的一种微发光二极管显示面板，该微发光二极管显示面板的阳极被划分为多个相互间隔的电极块，各个电极块通过连接线电性连接成一体，每一个电极块上对应设置一个微发光二极管，当其中一个微发光二极管出现不良时，可通过切断与设置该微发光二极管的电极板电性连接的连接线，将该微发光二极管单独修复为暗点，其他微发光二极管正常发光，能够简化微发光二极管显示面板的修复过程，提升微发光二极管显示面板的修复的成功率，保证微发光二极管显示面板的修复效果。本发明提供的一种微发光二极管显示面板的修复方法，能够简化微发光二极管显示面板的修复过程，提升微发光二极管显示面板的修复的成功率，保证微发光二极管显示面板的修复效果。\n\n附图说明\n\n[0030]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0031]附图中，\n\n[0032]图1为现有的微发光二极管显示面板的剖面图；\n\n[0033]图2为现有的微发光二极管显示面板的阳极俯视图；。\n\n[0034]图3为本发明的微发光二极管显示面板的剖面图；\n\n[0035]图4为本发明的微发光二极管显示面板的第一实施例的阳极俯视图；\n\n[0036]图5为本发明的微发光二极管显示面板的第二实施例的阳极俯视图；\n\n[0037]图6为本发明的微发光二极管显示面板的第三实施例的阳极俯视图；\n\n[0038]图7为本发明的微发光二极管显示面板的第四实施例的阳极俯视图；\n\n[0039]图8为本发明的微发光二极管显示面板的修复方法的流程图。\n\n具体实施方式\n\n[0040]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0041]请参阅图3，本发明提供一种微发光二极管显示面板，包括：基板1、以及设于所述基板1上阵列排布的多个像素单元2；\n\n[0042]每一个像素单元2均包括：设于所述基板1上的TFT层21、设于所述TFT层21上的平坦化层22、设于所述平坦化层22上并与所述TFT层21电性连接的阳极23、设于所述阳极23的四周边缘以及平坦化层22上的像素定义层24、设于所述阳极23上的阴极隔离层26、设于所述阳极23上并嵌入所述阴极隔离层26中的多个微发光二极管25、以及设于所述像素定义层24、阴极隔离层26与多个微发光二极管25上的阴极27；\n\n[0043]所述阳极23包括：与所述TFT层21电性连接的阳极电位输入板231、与阳极电位输入板231间隔分布的多个电极板232、以及与电极板232电性连接的多条连接线233；\n\n[0044]所述微发光二极管25与所述电极板232数量相同，每一个电极板232上设置一个微发光二极管25；\n\n[0045]所述阳极电位输入板231通过连接线233与至少两个电极板232电性连接，每一个电极板232通过连接线233与至少两个其他的电极板232电性连接或者与至少一个其他的电极板232以及阳极电位输入板231电性连接。\n\n[0046]具体地，如图4所示，在本发明的第一实施例中，每一个像素单元2包括三个微发光二极管25和三个电极板232，其中两个电极板232均通过两连接线233分别与另一个电极板232以及阳极电位输入板231电性连接，当其中任意一个微发光二极管25出现不良时，只要将与设置该微发光二极管25的电极板232电性连接的两连接线233进行切断即可将该微发光二极管25修复为暗点，而剩余的两个微发光二极管25仍可从阳极电位输入板231正常获取阳极电位信号，正常发光。\n\n[0047]具体地，如图5所示，图5为本发明的第二实施例，其与第一实施例的区别在于，所述另一个电极板232还通过一连接线233与所述阳极电位输入板231电性连接，也就是说三个电极板232均与所述阳极电位输入板231电性连接，此时，比第一实施例更优的是，当出现其中任意两个微发光二极管25均不良时，仍可以通过将与设置该两个微发光二极管25的两个电极板232电性连接的四连接线233进行切断实现将该两个微发光二极管25修复为暗点，并且剩余的一个微发光二极管25仍可从阳极电位输入板231正常获取阳极电位信号。\n\n[0048]具体地，请参阅图6，图6为本发明的第三实施例，每一个像素单元2包括八个微发光二极管25和八个电极板232，该八个电极板232与阳极电位输入板231呈3行3列矩阵排列，外围的七个电极板232与阳极电位输入板231依次串联到一起，中间的一个电极板232通过两连接线233分别与所述阳极电位输入板231以及一外围的电极板232电性连接。此外，图7为本发明的第四实施例，第四实施例为对第三实施例的改进，其中间的一个电极板232通过四连接线233分别与所述阳极电位输入板231以及三个外围的电极板232电性连接，第三实施例可以实现对任意一个微发光二极管25进行单独修复且不影响其他微发光二极管25正常发光，第四实施例可以实现对任意一个或两个微发光二极管25进行单独修复且不影响其他微发光二极管25正常发光。\n\n[0049]可以理解的是，本发明还可以包括其他的电极板排列方式与其他的连接方式，只要所述阳极电位输入板231通过连接线233与至少两个电极板232电性连接，每一个电极板232通过连接线233与至少两个其他的电极板232电性连接或者与至少一个其他的电极板232以及阳极电位输入板231电性连接，就能够实现本发明的对微发光二极管进行单独修复的目的，这不会影响本发明的实现。\n\n[0050]具体地，所述TFT层21包括：设于所述基板1上的栅极211、设于所述栅极211以及基板1上的栅极绝缘层212、设于所述栅极211上的栅极绝缘层212上的有源层213、设于所述有源层213以及栅极绝缘层212上的层间绝缘层214、以及间隔分布于所述层间绝缘层214上并分别通过贯穿所述层间绝缘层214的第一过孔2141及第二过孔2142与所述有源层213的两端接触的源极215和漏极216。所述阳极电位输入板231通过一贯穿所述平坦化层22的第三过孔221与所述漏极216接触。\n\n[0051]请参阅图8，基于上述的微发光二极管显示面板，本发明还提供一种微发光二极管显示面板的修复方法，包括如下步骤：\n\n[0052]步骤S1、提供一本发明的微发光二极管显示面板，具体结构如上述，此处不再赘述。\n\n[0053]步骤S2、检测到多个微发光二极管25中的一个出现不良，确定该出现不良的微发光二极管25的位置。\n\n[0054]步骤S3、将与设置该出现不良的微发光二极管25的电极板232电性连接的连接线233全部切断，将该出现不良的微发光二极管25单独修复成暗点。\n\n[0055]具体地，所述步骤S3通过镭射切割工艺切断所述连接线233，具体的切断点可以为如图4至图7中打叉的位置。\n\n[0056]具体地，如图4所示，在本发明的第一实施例中，每一个像素单元2包括三个微发光二极管25和三个电极板232，其中两个电极板232均通过两连接线233分别与另一个电极板232以及阳极电位输入板231电性连接，当其中任意一个微发光二极管25出现不良时，只要将与设置该微发光二极管25的电极板232电性连接的两连接线233进行切断即可将该微发光二极管25修复为暗点，而剩余的两个微发光二极管25仍可从阳极电位输入板231正常获取阳极电位信号，正常发光。例如图4中，中间一个微发光二极管25出现不良，只将与设置该微发光二极管25的电极板232电性连接的两连接线233切断即可，切断点可以为如图4中打叉的位置。\n\n[0057]具体地，如图5所示，图5为本发明的第二实施例，其与第一实施例的区别在于，所述另一个电极板232还通过一连接线233与所述阳极电位输入板231电性连接，也就是说三个电极板232均与所述阳极电位输入板231电性连接，此时，比第一实施例更优的是，当出现其中任意两个微发光二极管25均不良时，仍可以通过将与设置该两个微发光二极管25的两个电极板232电性连接的四连接线233进行切断实现将该两个微发光二极管25修复为暗点，并且剩余的一个微发光二极管25仍可从阳极电位输入板231正常获取阳极电位信号。例如图5中，中间一个微发光二极管25出现不良，只将与设置该微发光二极管25的电极板232电性连接的三条连接线233切断即可，切断点可以为如图5中打叉的位置。\n\n[0058]具体地，请参阅图6，图6为本发明的第三实施例，每一个像素单元2包括八个微发光二极管25和八个电极板232，该八个电极板232与阳极电位输入板231呈3行3列矩阵排列，外围的七个电极板232与阳极电位输入板231依次串联到一起，中间的一个电极板232通过两连接线233分别与所述阳极电位输入板231以及一外围的电极板232电性连接。此外，图7为本发明的第四实施例，第四实施例为对第三实施例的改进，其中间的一个电极板232通过四连接线233分别与所述阳极电位输入板231以及三个外围的电极板232电性连接，第三实施例可以实现对任意一个微发光二极管25进行单独修复且不影响其他微发光二极管25正常发光，第四实施例可以实现对任意一个或两个微发光二极管25进行单独修复且不影响其他微发光二极管25正常发光。\n\n[0059]可以理解的是，本发明还可以包括其他的电极板排列方式与其他的连接方式，只要所述阳极电位输入板231通过连接线233与至少两个电极板232电性连接，每一个电极板232通过连接线233与至少两个其他的电极板232电性连接或者与至少一个其他的电极板232以及阳极电位输入板231电性连接，就能够实现本发明的对微发光二极管进行单独修复的目的，这不会影响本发明的实现。\n\n[0060]需要说明的是，本发明通过将阳极被划分为多个相互间隔的电极块，各个电极块通过连接线电性连接成一体，不仅可以实现任意一个微发光二极管25进行单独修复且不影响其他微发光二极管25正常发光，而且可以清晰的找出应该进行镭射切割的区域，便于修复时的定位，保证修复效果。\n\n[0061]综上所述，本发明提供的微发光二极管显示面板，该微发光二极管显示面板的阳极被划分为多个相互间隔的电极块，各个电极块通过连接线电性连接成一体，每一个电极块上对应设置一个微发光二极管，当其中一个微发光二极管出现不良时，可通过切断与设置该微发光二极管的电极板电性连接的连接线，将该微发光二极管单独修复为暗点，其他微发光二极管正常发光，能够简化微发光二极管显示面板的修复过程，提升微发光二极管显示面板的修复的成功率，保证微发光二极管显示面板的修复效果。本发明提供的微发光二极管显示面板的修复方法，能够简化微发光二极管显示面板的修复过程，提升微发光二极管显示面板的修复的成功率，保证微发光二极管显示面板的修复效果。\n\n[0062]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10582, 23636, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管显示面板及其制造方法。\n\n背景技术\n\n[0002]微发光二极管(Micro LED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但μLED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0003]现有技术中的Micro LED的尺寸大小远小于现有的像素尺寸。例如，现行的55’FHD显示器，其子像素(R/G/B)的长宽可能分别为600um和200um左右，而Micro LED的尺寸约为10-50um左右。这就导致子像素中Micro LED周围有较大区域的非显示区。由于Micro LED发出的光是向各个方向的，于是有较多的光能损耗在非显示方向上，光源的利用率较低。\n\n发明内容\n\n[0004]本发明的目的在于提供一种微发光二极管显示面板，该微发光二极管显示面板可以提升光线的利用率。\n\n[0005]本发明的另一目的在于提供微发光二极管显示面板的制造方法，该方法生产出的微发光二极管显示面板可以提升光线的利用率。\n\n[0006]为了实现上述目的，本发明实施方式提供如下技术方案：\n\n[0007]本发明实施例提供一种微发光二极管显示面板，包括衬底基板和多个微发光二极管，所述衬底基板包括多个阵列设置的子像素区域，每个所述子像素区域中设有凹槽，所述凹槽内表面覆盖有相互绝缘的第一反光电极和第二反光电极，每个所述微发光二极管设置于一个所述凹槽中，所述微发光二极管的一管脚与所述第一反光电极连接，另一管脚与所述第二反光电极连接，所述第一反光电极和所述第二反光电极将所述微发光二极管发出的光线反射回所述凹槽。\n\n[0008]其中，还包括反光层，所述反光层位于所述凹槽下方，所述反光层将所述微发光二极管发出的光线反射回所述凹槽。\n\n[0009]其中，所述凹槽底部设置有凸台，所述凸台将所述第一反光电极和所述第二反光电极隔开。\n\n[0010]其中，所述微发光二极管放置于所述凸台上，所述微发光二极管的两个管脚分置于所述凸台两侧。\n\n[0011]其中，所述第一反光电极及所述第二反光电极的材料为铝或银。\n\n[0012]其中，所述多个微发光二极管包括红色微发光二极管、绿色微发光二极管和蓝色微发光二极管。\n\n[0013]其中，所述多个微发光二极管均为GaN微发光二极管、InGaN微发光二极管或AlGaInP微发光二极管。\n\n[0014]本发明实施还提供一种微发光二极管显示面板的制造方法，包括：\n\n[0015]提供一衬底基板，所述衬底基板包括多个阵列设置的子像素区域，每个所述子像素区域上设置有凹槽；\n\n[0016]在所述衬底基板上形成反光电极层，所述反光电极层覆盖所述凹槽内表面；\n\n[0017]在所述反光电极层上形成光阻层；\n\n[0018]透过所述光阻层对所述反光电极层进行蚀刻，使得所述反光电极层之位于所述凹槽底部部分被分开以形成第一反光电极和第二反光电极；\n\n[0019]通过微转印法将微发光二极管置于所述凹槽中，其中，所述微发光二极管的一管脚与所述第一反光电极连接，另一管脚与所述第二反光电极连接。\n\n[0020]其中，采用溅射法或热蒸发法在所述衬底基板上形成所述反光电极层。\n\n[0021]其中，所述在所述基板上形成反光电极层，所述反光电极层覆盖所述凹槽内表面步骤中包括，将聚二烯丙基二甲基氯化铵涂布于所述衬底基板表面，在所述聚二烯丙基二甲基氯化铵上涂布带负电的银纳米粒子，以形成所述反光电极层。\n\n[0022]本发明实施例具有如下优点或有益效果：\n\n[0023]本发明的微发光二极管显示面板及其制造方法中，通过在衬底基板上设置凹槽，并且凹槽内表面覆盖反光电极，通过反光电极与微发光二极管连接，衬底基板上的驱动电路控制所述微发光二极管发光，所述微发光二极管发出的光线可以经凹槽内表面的反光电极反射回凹槽，从而减少了光能的损耗，提升光源利用率。\n\n附图说明\n\n[0024]为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0025]图1为本发明一种实施例的微发光二极管显示面板的结构示意图。\n\n[0026]图2为本发明另一实施例的微发光二极管显示面板的结构示意图。\n\n[0027]图3为本发明微发光二极管显示面板的制造方法流程示意图。\n\n具体实施方式\n\n[0028]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其它实施例，都属于本发明保护的范围。\n\n[0029]此外，以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明中所提到的方向用语，例如，“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”、“侧面”等，仅是参考附加图式的方向，因此，使用的方向用语是为了更好、更清楚地说明及理解本发明，而不是指示或暗指所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。\n\n[0030]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸地连接，或者一体地连接；可以是机械连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。\n\n[0031]此外，在本发明的描述中，除非另有说明，“多个”的含义是两个或两个以上。若本说明书中出现“工序”的用语，其不仅是指独立的工序，在与其它工序无法明确区别时，只要能实现该工序所预期的作用则也包括在本用语中。另外，本说明书中用“～”表示的数值范围是指将“～”前后记载的数值分别作为最小值及最大值包括在内的范围。在附图中，结构相似或相同的用相同的标号表示。\n\n[0032]请参阅图1。图1为本发明一种实施例的微发光二极管显示面板的结构示意图。本实施例提供的微发光二极管显示面板100包括衬底基板10和多个微发光二极管15。所述衬底基板10包括多个阵列设置的像素区域(图未示出)，通常每个像素区域包括三个子像素区域101(即虚线围绕部分)。每个所述子像素区域101上设置有一个凹槽11，所述凹槽11在所述子像素区域101上的投影包含于所述子像素区域101。所述凹槽11内表面覆盖有相互绝缘的第一反光电极12和第二反光电极。具体的，所述第一反光电极12与所述第二反光电极13之间形成有间隙，通过所述间隙使得所述第一反光电极12和所述第二反光电极13之间相互绝缘。优选的，所述间隙形成于所述凹槽11底部。每个所述凹槽11中设置有一个所述微发光二极管15。所述微发光二极管15的一管脚与所述第一反光电极12连接，所述微发光二极管15的另一管脚与所述第二反光电极13连接。\n\n[0033]具体地，所述衬底基板10为柔性基板或刚性基板。优选的，所述衬底基板10为玻璃基板，所述衬底基板10上形成有驱动电路(图未示出)，所述驱动电路经所述第一反光电极12和所述第二反光电极13后与所述微发光二极管15电性连接，通过所述驱动电路控制所述微发光二极管15发光。所述微发光二极管15照射至所述第一反光电极12及所述第二反光电极13处的光线，会被所述第一反光电极12及所述第二反光电极13反射回所述凹槽11。\n\n[0034]进一步具体的，所述第一反光电极12和所述第二反光电极13可以采用高反射性的金属材料制成。例如可以采用铝或银材料制成。\n\n[0035]本发明中通过在衬底基板10上设置凹槽11，并且凹槽11内表面覆盖反光电极(第一反光电极12和第二反光电极13)，通过反光电极连接驱动电路和微发光二极管15，衬底基板10上的驱动电路控制所述微发光二极管15发光，所述微发光二极管15发出的光线可以经凹槽11内表面的反光电极反射回凹槽11，从而减少了光能的损耗，提升光源利用率。\n\n[0036]进一步的，所述微发光二极管显示面板还包括反光层16。所述反光层16位于所述凹槽11下方，所述反光层16正对所述凹槽11底部。可以理解的是，所述反光层16与所述第一反光电极12及所述第二反光电极13在不同层中。当微发光二极管15发出的光线射入所述凹槽11底部时，此时射入凹槽11底部的光线会在所述反光层16的反射作用下返回所述凹槽11。进一步减少了光能的损耗，提升光源利用率。进一步的，所述反光层16可以采用高反射性的金属材料制成。例如可以采用铝或银材料制成。\n\n[0037]具体地，所述多个微发光二极管15包括：红色微发光二极管、绿色微发光二极管和蓝色微发光二极管。具体的，一红色微发光二极管、一绿色微发光二极管及一蓝色微发光二极管构成一个显示像素。即三个子像素区域101形成一个像素区域。\n\n[0038]优选地，所述多个微发光二极管15均为氮化镓(GaN)微发光二极管、氮化铟镓(InGaN)微发光二极管、或磷化铝镓铟(AlGaInP)微发光二极管。\n\n[0039]具体的，对于同一直线上的多个微发光二极管15，可以为共阴级结构，阳级分开。当然，其他实施方式中，还可以是但是多个微发光二极管15串联，即上一微发光二极管15的阴极连接下一微发光二极管15的阳极。此处不加以限定。\n\n[0040]请参阅图2。图2为本发明另一实施例的微发光二极管显示面板的结构示意图。本实施例与上述实施例的区别点在于，本实施例提供的微发光二极管显示面板100’的衬底基板10上的凹槽11底部设置有凸台14。通过所述凸台14将所述第一反光电极12和所述第二反光电极13隔开，进而实现第一反光电极12和第二反光电极13的绝缘。具体的，所述微发光二极管15放置于所述凸台14上，所述微发光二极管的两个管脚分置于所述凸台14两侧。\n\n[0041]本发明还提供一种上述微发光二极管显示面板的制造方法。具体的，请参阅图3。图3为本发明微发光二极管显示面板的制造方法流程示意图。本发明的制造方法主要包括如下步骤：\n\n[0042]步骤S001：提供一衬底基板，所述衬底基板包括多个阵列设置的子像素区域，每个所述子像素区域上设置有凹槽。\n\n[0043]具体的，请结合参阅图1。所述衬底基板10包括多个阵列设置的像素区域，通常每个像素区域包括三个子像素区域101。每个所述子像素区域101上设置有一个凹槽11，所述凹槽11在所述子像素区域101上的投影包含于所述子像素区域101。进一步具体的，可以通过掩膜版+光阻蚀刻的方法在所述衬底基板10上形成所述凹槽11。\n\n[0044]步骤S002：在所述衬底基板上形成反光电极层，所述反光电极层覆盖所述凹槽内表面。\n\n[0045]具体的，本发明一种实施方式中，可以通过溅射法或热蒸发法在所述衬底基板10上形成所述反光电极层。具体的，所述反光电极层覆盖所述凹槽11内表面。所述反光电极层的材料可以采用高反射性的金属材料制成。例如可以采用铝或银材料制成。\n\n[0046]本发明一种可能的实现方式中，还可以经如下步骤形成反光电极层：\n\n[0047]采用阳离子聚电解质状态的聚二烯丙基二甲基氯化铵(PDDA)涂布在所述衬底基板10表面；优选的，所述聚二烯丙基二甲基氯化铵的浓度可以为2mg/mL。待风刀吹干后；在所述聚二烯丙基二甲基氯化铵上涂布表面带负电的银纳米粒子，同样以风刀吹干，形成一层Ag纳米粒子薄膜，即形成所述反光电极层。该膜层由于金属特有的光学特性，可以使微发光二极管15向凹槽11周围方向发射的光线，经过折射与反射重新汇聚到出光方向，减少光损失，提高光利用率。\n\n[0048]步骤S003：在所述反光电极层上形成光阻层。\n\n[0049]步骤S004：透过所述光阻层对所述反光电极层进行蚀刻，使得所述反光电极层之位于所述凹槽底部部分被分开以形成第一反光电极和第二反光电极。\n\n[0050]具体的，可通过干法蚀刻的方法依次对所述光阻层和所述反光电极层进行蚀刻，以将反光电极层之位于所述凹槽11底部部分被分开以形成第一反光电极12和第二反光电极13。\n\n[0051]可以理解的是，所述衬底基板10上还形成有电路图案(即驱动电路)，以与反光电极层的第一反光电极12及第二反光电极13连接，驱动电路驱动所述多个微发光二极管15发光。\n\n[0052]步骤S005：通过微转印法将微发光二极管置于所述凹槽中，其中，所述微发光二极管的一管脚与所述第一反光电极连接，另一管脚与所述第二反光电极连接。\n\n[0053]所述多个微发光二极管15可通过微转印的方法制得，具体操作过程如下：首先提供一原生基板，在所述原生基板上生成多个微发光二极管15，再通过一微转印传送头将所述多个微发光二极管15转印到衬底基板10上的凹槽11中。\n\n[0054]通过本实施例的微发光二极管显示面板的制造方法，通过在衬底基板上设置凹槽，并且凹槽内表面覆盖反光电极，通过反光电极与微发光二极管连接，衬底基板上的驱动电路控制所述微发光二极管发光，所述微发光二极管发出的光线可以经凹槽内表面的反光电极反射回凹槽，从而减少了光能的损耗，提升光源利用率。\n\n[0055]在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不一定指的是相同的实施例或示例。而且，描述的具体特征、结构、材料或特点可以在任何的一个或多个实施例或示例中以合适的方式结合。\n\n[0056]以上所述的实施方式，并不构成对该技术方案保护范围的限定。任何在上述实施方式的精神和原则之内所作的修改、等同替换和改进等，均应包含在该技术方案的保护范围之内。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管显示面板及其制造方法。\n\n背景技术\n\n[0002]微发光二极管(Micro LED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但μLED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0003]现有技术中的Micro LED的尺寸大小远小于现有的像素尺寸。例如，现行的55’FHD显示器，其子像素(R/G/B)的长宽可能分别为600um和200um左右，而Micro LED的尺寸约为10-50um左右。这就导致子像素中Micro LED周围有较大区域的非显示区。由于Micro LED发出的光是向各个方向的，于是有较多的光能损耗在非显示方向上，光源的利用率较低。\n\n发明内容\n\n[0004]本发明的目的在于提供一种微发光二极管显示面板，该微发光二极管显示面板可以提升光线的利用率。\n\n[0005]本发明的另一目的在于提供微发光二极管显示面板的制造方法，该方法生产出的微发光二极管显示面板可以提升光线的利用率。\n\n[0006]为了实现上述目的，本发明实施方式提供如下技术方案：\n\n[0007]本发明实施例提供一种微发光二极管显示面板，包括衬底基板和多个微发光二极管，所述衬底基板包括多个阵列设置的子像素区域，每个所述子像素区域中设有凹槽，所述凹槽内表面覆盖有相互绝缘的第一反光电极和第二反光电极，每个所述微发光二极管设置于一个所述凹槽中，所述微发光二极管的一管脚与所述第一反光电极连接，另一管脚与所述第二反光电极连接，所述第一反光电极和所述第二反光电极将所述微发光二极管发出的光线反射回所述凹槽。\n\n[0008]其中，还包括反光层，所述反光层位于所述凹槽下方，所述反光层将所述微发光二极管发出的光线反射回所述凹槽。\n\n[0009]其中，所述凹槽底部设置有凸台，所述凸台将所述第一反光电极和所述第二反光电极隔开。\n\n[0010]其中，所述微发光二极管放置于所述凸台上，所述微发光二极管的两个管脚分置于所述凸台两侧。\n\n[0011]其中，所述第一反光电极及所述第二反光电极的材料为铝或银。\n\n[0012]其中，所述多个微发光二极管包括红色微发光二极管、绿色微发光二极管和蓝色微发光二极管。\n\n[0013]其中，所述多个微发光二极管均为GaN微发光二极管、InGaN微发光二极管或AlGaInP微发光二极管。\n\n[0014]本发明实施还提供一种微发光二极管显示面板的制造方法，包括：\n\n[0015]提供一衬底基板，所述衬底基板包括多个阵列设置的子像素区域，每个所述子像素区域上设置有凹槽；\n\n[0016]在所述衬底基板上形成反光电极层，所述反光电极层覆盖所述凹槽内表面；\n\n[0017]在所述反光电极层上形成光阻层；\n\n[0018]透过所述光阻层对所述反光电极层进行蚀刻，使得所述反光电极层之位于所述凹槽底部部分被分开以形成第一反光电极和第二反光电极；\n\n[0019]通过微转印法将微发光二极管置于所述凹槽中，其中，所述微发光二极管的一管脚与所述第一反光电极连接，另一管脚与所述第二反光电极连接。\n\n[0020]其中，采用溅射法或热蒸发法在所述衬底基板上形成所述反光电极层。\n\n[0021]其中，所述在所述基板上形成反光电极层，所述反光电极层覆盖所述凹槽内表面步骤中包括，将聚二烯丙基二甲基氯化铵涂布于所述衬底基板表面，在所述聚二烯丙基二甲基氯化铵上涂布带负电的银纳米粒子，以形成所述反光电极层。\n\n[0022]本发明实施例具有如下优点或有益效果：\n\n[0023]本发明的微发光二极管显示面板及其制造方法中，通过在衬底基板上设置凹槽，并且凹槽内表面覆盖反光电极，通过反光电极与微发光二极管连接，衬底基板上的驱动电路控制所述微发光二极管发光，所述微发光二极管发出的光线可以经凹槽内表面的反光电极反射回凹槽，从而减少了光能的损耗，提升光源利用率。\n\n附图说明\n\n[0024]为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0025]图1为本发明一种实施例的微发光二极管显示面板的结构示意图。\n\n[0026]图2为本发明另一实施例的微发光二极管显示面板的结构示意图。\n\n[0027]图3为本发明微发光二极管显示面板的制造方法流程示意图。\n\n具体实施方式\n\n[0028]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其它实施例，都属于本发明保护的范围。\n\n[0029]此外，以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明中所提到的方向用语，例如，“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”、“侧面”等，仅是参考附加图式的方向，因此，使用的方向用语是为了更好、更清楚地说明及理解本发明，而不是指示或暗指所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。\n\n[0030]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸地连接，或者一体地连接；可以是机械连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。\n\n[0031]此外，在本发明的描述中，除非另有说明，“多个”的含义是两个或两个以上。若本说明书中出现“工序”的用语，其不仅是指独立的工序，在与其它工序无法明确区别时，只要能实现该工序所预期的作用则也包括在本用语中。另外，本说明书中用“～”表示的数值范围是指将“～”前后记载的数值分别作为最小值及最大值包括在内的范围。在附图中，结构相似或相同的用相同的标号表示。\n\n[0032]请参阅图1。图1为本发明一种实施例的微发光二极管显示面板的结构示意图。本实施例提供的微发光二极管显示面板100包括衬底基板10和多个微发光二极管15。所述衬底基板10包括多个阵列设置的像素区域(图未示出)，通常每个像素区域包括三个子像素区域101(即虚线围绕部分)。每个所述子像素区域101上设置有一个凹槽11，所述凹槽11在所述子像素区域101上的投影包含于所述子像素区域101。所述凹槽11内表面覆盖有相互绝缘的第一反光电极12和第二反光电极。具体的，所述第一反光电极12与所述第二反光电极13之间形成有间隙，通过所述间隙使得所述第一反光电极12和所述第二反光电极13之间相互绝缘。优选的，所述间隙形成于所述凹槽11底部。每个所述凹槽11中设置有一个所述微发光二极管15。所述微发光二极管15的一管脚与所述第一反光电极12连接，所述微发光二极管15的另一管脚与所述第二反光电极13连接。\n\n[0033]具体地，所述衬底基板10为柔性基板或刚性基板。优选的，所述衬底基板10为玻璃基板，所述衬底基板10上形成有驱动电路(图未示出)，所述驱动电路经所述第一反光电极12和所述第二反光电极13后与所述微发光二极管15电性连接，通过所述驱动电路控制所述微发光二极管15发光。所述微发光二极管15照射至所述第一反光电极12及所述第二反光电极13处的光线，会被所述第一反光电极12及所述第二反光电极13反射回所述凹槽11。\n\n[0034]进一步具体的，所述第一反光电极12和所述第二反光电极13可以采用高反射性的金属材料制成。例如可以采用铝或银材料制成。\n\n[0035]本发明中通过在衬底基板10上设置凹槽11，并且凹槽11内表面覆盖反光电极(第一反光电极12和第二反光电极13)，通过反光电极连接驱动电路和微发光二极管15，衬底基板10上的驱动电路控制所述微发光二极管15发光，所述微发光二极管15发出的光线可以经凹槽11内表面的反光电极反射回凹槽11，从而减少了光能的损耗，提升光源利用率。\n\n[0036]进一步的，所述微发光二极管显示面板还包括反光层16。所述反光层16位于所述凹槽11下方，所述反光层16正对所述凹槽11底部。可以理解的是，所述反光层16与所述第一反光电极12及所述第二反光电极13在不同层中。当微发光二极管15发出的光线射入所述凹槽11底部时，此时射入凹槽11底部的光线会在所述反光层16的反射作用下返回所述凹槽11。进一步减少了光能的损耗，提升光源利用率。进一步的，所述反光层16可以采用高反射性的金属材料制成。例如可以采用铝或银材料制成。\n\n[0037]具体地，所述多个微发光二极管15包括：红色微发光二极管、绿色微发光二极管和蓝色微发光二极管。具体的，一红色微发光二极管、一绿色微发光二极管及一蓝色微发光二极管构成一个显示像素。即三个子像素区域101形成一个像素区域。\n\n[0038]优选地，所述多个微发光二极管15均为氮化镓(GaN)微发光二极管、氮化铟镓(InGaN)微发光二极管、或磷化铝镓铟(AlGaInP)微发光二极管。\n\n[0039]具体的，对于同一直线上的多个微发光二极管15，可以为共阴级结构，阳级分开。当然，其他实施方式中，还可以是但是多个微发光二极管15串联，即上一微发光二极管15的阴极连接下一微发光二极管15的阳极。此处不加以限定。\n\n[0040]请参阅图2。图2为本发明另一实施例的微发光二极管显示面板的结构示意图。本实施例与上述实施例的区别点在于，本实施例提供的微发光二极管显示面板100’的衬底基板10上的凹槽11底部设置有凸台14。通过所述凸台14将所述第一反光电极12和所述第二反光电极13隔开，进而实现第一反光电极12和第二反光电极13的绝缘。具体的，所述微发光二极管15放置于所述凸台14上，所述微发光二极管的两个管脚分置于所述凸台14两侧。\n\n[0041]本发明还提供一种上述微发光二极管显示面板的制造方法。具体的，请参阅图3。图3为本发明微发光二极管显示面板的制造方法流程示意图。本发明的制造方法主要包括如下步骤：\n\n[0042]步骤S001：提供一衬底基板，所述衬底基板包括多个阵列设置的子像素区域，每个所述子像素区域上设置有凹槽。\n\n[0043]具体的，请结合参阅图1。所述衬底基板10包括多个阵列设置的像素区域，通常每个像素区域包括三个子像素区域101。每个所述子像素区域101上设置有一个凹槽11，所述凹槽11在所述子像素区域101上的投影包含于所述子像素区域101。进一步具体的，可以通过掩膜版+光阻蚀刻的方法在所述衬底基板10上形成所述凹槽11。\n\n[0044]步骤S002：在所述衬底基板上形成反光电极层，所述反光电极层覆盖所述凹槽内表面。\n\n[0045]具体的，本发明一种实施方式中，可以通过溅射法或热蒸发法在所述衬底基板10上形成所述反光电极层。具体的，所述反光电极层覆盖所述凹槽11内表面。所述反光电极层的材料可以采用高反射性的金属材料制成。例如可以采用铝或银材料制成。\n\n[0046]本发明一种可能的实现方式中，还可以经如下步骤形成反光电极层：\n\n[0047]采用阳离子聚电解质状态的聚二烯丙基二甲基氯化铵(PDDA)涂布在所述衬底基板10表面；优选的，所述聚二烯丙基二甲基氯化铵的浓度可以为2mg/mL。待风刀吹干后；在所述聚二烯丙基二甲基氯化铵上涂布表面带负电的银纳米粒子，同样以风刀吹干，形成一层Ag纳米粒子薄膜，即形成所述反光电极层。该膜层由于金属特有的光学特性，可以使微发光二极管15向凹槽11周围方向发射的光线，经过折射与反射重新汇聚到出光方向，减少光损失，提高光利用率。\n\n[0048]步骤S003：在所述反光电极层上形成光阻层。\n\n[0049]步骤S004：透过所述光阻层对所述反光电极层进行蚀刻，使得所述反光电极层之位于所述凹槽底部部分被分开以形成第一反光电极和第二反光电极。\n\n[0050]具体的，可通过干法蚀刻的方法依次对所述光阻层和所述反光电极层进行蚀刻，以将反光电极层之位于所述凹槽11底部部分被分开以形成第一反光电极12和第二反光电极13。\n\n[0051]可以理解的是，所述衬底基板10上还形成有电路图案(即驱动电路)，以与反光电极层的第一反光电极12及第二反光电极13连接，驱动电路驱动所述多个微发光二极管15发光。\n\n[0052]步骤S005：通过微转印法将微发光二极管置于所述凹槽中，其中，所述微发光二极管的一管脚与所述第一反光电极连接，另一管脚与所述第二反光电极连接。\n\n[0053]所述多个微发光二极管15可通过微转印的方法制得，具体操作过程如下：首先提供一原生基板，在所述原生基板上生成多个微发光二极管15，再通过一微转印传送头将所述多个微发光二极管15转印到衬底基板10上的凹槽11中。\n\n[0054]通过本实施例的微发光二极管显示面板的制造方法，通过在衬底基板上设置凹槽，并且凹槽内表面覆盖反光电极，通过反光电极与微发光二极管连接，衬底基板上的驱动电路控制所述微发光二极管发光，所述微发光二极管发出的光线可以经凹槽内表面的反光电极反射回凹槽，从而减少了光能的损耗，提升光源利用率。\n\n[0055]在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不一定指的是相同的实施例或示例。而且，描述的具体特征、结构、材料或特点可以在任何的一个或多个实施例或示例中以合适的方式结合。\n\n[0056]以上所述的实施方式，并不构成对该技术方案保护范围的限定。任何在上述实施方式的精神和原则之内所作的修改、等同替换和改进等，均应包含在该技术方案的保护范围之内。');
INSERT INTO `os_patent_instruction_text` VALUES (10583, 23637, '技术领域\n\n[0001]本发明涉及集成电路技术领域，尤其涉及一种输入电压上升时间控制电路。\n\n背景技术\n\n[0002]随着显示技术的发展，液晶显示器(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]现有市场上的液晶显示装置大部分为背光型液晶显示器，其包括液晶显示面板及背光模组(Backlight Module)。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，两片玻璃基板中间有许多垂直和水平的细小电线，通过通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。\n\n[0004]通常液晶显示面板由彩膜(CF，Color Filter)基板、薄膜晶体管(TFT，Thin FilmTransistor)基板、夹于彩膜基板与薄膜晶体管基板之间的液晶(LC，Liquid Crystal)及密封胶框(Sealant)组成，其成型工艺一般包括：前段阵列(Array)制程(薄膜、黄光、蚀刻及剥膜)、中段成盒(Cell)制程(TFT基板与CF基板贴合)及后段模组组装制程(驱动IC与印刷电路板压合)。其中，前段Array制程主要是形成TFT基板，以便于控制液晶分子的运动；中段Cell制程主要是在TFT基板与CF基板之间添加液晶；后段模组组装制程主要是驱动IC压合与印刷电路板的整合，进而驱动液晶分子转动，显示图像。\n\n[0005]随着消费者对产品品质要求的不断提高，液晶显示面板的开机时间成为消费者关注的焦点之一，而液晶显示面板的开机时间又与液晶显示面板的输入电压的上升时间(输入电压从零到面板开机电压所需的时间)有关，当输入电压的上升时间过短，会导致浪涌电流(Inrush Current)太大，将会冲击面板上的集成电路，进而损坏集成电路，当输入电压的上升时间过长，会导致开机时间过长，引发客户投诉，因此通常液晶显示面板的开机时间需保持在0.5ms到10ms之间。如图1所示，为现有的一种输入电压上升时间控制电路，包括：机芯板101、与所述机芯板101电性连接的面板驱动单元102，所述面板驱动单元102上设有并联的多个电容C10，所述多个电容C10的第一端均与机芯板101电性连接，第二端均接地，所述机芯板101输入一机芯板电压Vin12而后向面板驱动单元102输出一输入电压Vin1，通过控制面板驱动单元102中电容C10的数量控制输入电压Vin1的上升时间，进而控制面板的开机时间，电容C10数量越多，输入电压Vin1上升时间越长，面板的开机时间越长，电容C10数量越少，输入电压Vin1上升时间越短，面板的开机时间越短，该种输入电压上升时间控制电路不能保证该面板驱动单元102搭配任一规格的机芯板101都能使面板的开机时间在0.5ms到10ms之间，将会影响产品品质。\n\n发明内容\n\n[0006]本发明的目的在于提供一种输入电压上升时间控制电路，能够调节输入电压的上升时间，进而控制面板开机时间符合正常开机时间范围，提高产品品质。\n\n[0007]为实现上述目的，本发明提供一种输入电压上升时间控制电路，包括：机芯板、与所述机芯板电性连接的面板驱动单元，所述面板驱动单元电性连接负载；所述面板驱动单元包括：与所述机芯板电性连接的电压控制单元；\n\n[0008]所述电压控制单元包括：电压上升斜率侦测单元、第一比较器、第二比较器、控制模块、及电容单元；所述电压上升斜率侦测单元的输入端电性连接机芯板的输出端，所述电压上升斜率侦测单元的输出端同时电性连接第一比较器的同相输入端、第二比较器的同相输入端；所述第一比较器的反相输入端接收第一斜率，所述第一比较器的输出端电性连接控制模块的第一输入端；所述第二比较器的反相输入端接收第二斜率，所述第二比较器的输出端电性连接控制模块的第二输入端；所述电容单元的第一端电性连接控制模块的输出端，所述电容单元的第二端电性连接机芯板的输出端；第一斜率为对应预设的最小开机时间的电容单元的第二端的电压上升斜率，第二斜率为对应预设的最大开机时间的电容单元的第二端的电压上升斜率；\n\n[0009]所述机芯板的输出端向面板驱动单元输出一输入电压；所述电压上升斜率侦测单元侦测电容单元的第二端的电压上升斜率，并将电压上升斜率输出至第一比较器及第二比较器的同相输入端，所述第一比较器将电压上升斜率与第一斜率进行比较，并向控制模块输出第一比较结果；所述第二比较器将电压上升斜率与第二斜率进行比较，并向控制模块输出第二比较结果；所述控制模块根据所述第一比较结果和第二比较结果改变所述电容单元的电容量，从而调节电容单元的第二端的电压上升至输入电压的时间。\n\n[0010]当所述第二比较结果为电压上升斜率小于第二斜率时，所述控制模块控制所述电容单元的电容量降低，从而减小电容单元的第二端的电压上升至输入电压的时间；\n\n[0011]当所述第一比较结果为电压上升斜率大于第一斜率时，所述控制模块控制所述电容单元的电容量增大，从而增加电容单元的第二端的电压上升至输入电压的时间。\n\n[0012]当所述第一比较结果为电压上升斜率小于第一斜率并大于第二斜率时，所述控制模块不改变电容单元的电容量。\n\n[0013]所述电容单元包括：多个场效应管、及与所述多个场效应管一一对应的多个电容；所述多个场效应管的栅极均电性连接控制模块，源极均接地，漏极电性连接对应电容的第一端；所述多个电容的第二端均电性连接机芯板的输出端；\n\n[0014]所述控制单元通过分别控制多个场效应管的导通与截止改变电容单元的电容量。\n\n[0015]所述面板驱动单元还包括与所述电压控制单元电性连接的电流控制单元；\n\n[0016]所述电流控制单元包括：光耦合器、第一电阻、第二电阻、第三比较器、及第四比较器；所述光耦合器的第一引脚电性连接机芯板的输出端，第二引脚电性连接负载，第三引脚电性连接第二电阻的第一端，第四引脚电性连接第一节点；所述第二电阻的第二端接入电源电压；所述第一电阻的第一端电性连接第一节点，第二端接地；所述第三比较器的同相输入端电性连接第一节点，反相输入端接收第一比较电压，输出端电性连接控制模块第三输入端；所述第四比较器的同相输入端电性连接第一节点，反相输入端接收第二比较电压，输出端电性连接控制模块的第四输入端；\n\n[0017]所述第一比较电压为预设的最小浪涌电流流入光耦合器的第一引脚时，第一节点处的电压；所述第二比较电压为预设的最大浪涌电流流入光耦合器的第一引脚时，第一节点处的电压；\n\n[0018]当电容单元的第二端的电压上升时的浪涌电流流入光耦合器的第一引脚时，所述第三比较器将第一节点处的电压与第一比较电压进行比较，并向控制模块输出第三比较结果；所述第四比较器将第一节点处的电压与第二比较电压进行比较，并向控制模块输出第四比较结果；所述控制模块根据所述第三比较结果和第四比较结果改变所述电容单元的电容量，从而调节电容单元的第二端的电压上升时的浪涌电流。\n\n[0019]所述光耦合器包括发光二极管及光敏三极管；所述发光二极管的阳极为光耦合器的第一引脚，阴极为光耦合器的第二引脚；所述光敏三极管的发射极为光耦合器的第三引脚，集电极为光耦合器的第四引脚。\n\n[0020]当所述第三比较结果为第一节点处的电压小于第一比较电压时，所述控制模块控制所述电容单元的电容量降低，从而增加电容单元的第二端的电压上升时的浪涌电流；\n\n[0021]当所述第四比较结果为第一节点处的电压大于第二比较电压时，所述控制模块控制所述电容单元的电容量增大，从而减小电容单元的第二端的电压上升时的浪涌电流。\n\n[0022]当所述第三比较结果为第一节点处的电压大于第一比较电压，且所述第四比较结果为第一节点处的电压小于第二比较电压时，所述控制模块不改变所述电容单元的电容量。\n\n[0023]所述控制模块为时序控制器；\n\n[0024]所述电压上升斜率侦测单元为微分器。\n\n[0025]所述预设的最小开机时间为0.5ms，所述预设的最大开机时间为10ms。\n\n[0026]本发明的有益效果：本发明的输入电压上升时间控制电路，通过在面板驱动单元内设置电压控制单元，电压控制单元包括：电压上升斜率侦测单元、第一比较器、第二比较器、控制单元、及电容单元，电压上升斜率侦测单元侦测电容单元的第二端的电压上升斜率并输出至第一比较器及第二比较器，所述第一比较器、及第二比较器分别将该电压上升斜率与对应预设的最小开机时间的第一斜率及对应预设的最大开机时间的第二斜率进行比较，控制模块根据比较结果改变所述电容单元的电容量，从而调节电容单元的第二端的电压上升至输入电压的时间，控制面板开机时间符合正常开机时间范围，提高产品品质。\n\n附图说明\n\n[0027]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0028]附图中，\n\n[0029]图1为现有的输入电压上升时间控制电路的电路图；\n\n[0030]图2为本发明的输入电压上升时间控制电路的电路图；\n\n[0031]图3为本发明的输入电压上升时间控制电路电容单元第二端的电压随时间变化的线形图。\n\n具体实施方式\n\n[0032]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0033]请参阅图2，本发明提供一种输入电压上升时间控制电路，包括：机芯板1、与所述机芯板1电性连接的面板驱动单元2，所述面板驱动单元2连接负载3；所述面板驱动单元2包括：与所述机芯板1电性连接的电压控制单元21；\n\n[0034]所述电压控制单元21包括：电压上升斜率侦测单元211、第一比较器212、第二比较器213、控制模块214、及电容单元215；所述电压上升斜率侦测单元211的输入端电性连接机芯板1的输出端，所述电压上升斜率侦测单元211的输出端同时电性连接第一比较器212的同相输入端、第二比较器213的同相输入端；所述第一比较器212的反相输入端接收第一斜率K1，所述第一比较器212的输出端电性连接控制模块214的第一输入端；所述第二比较器213的反相输入端接收第二斜率K2，所述第二比较器212的输出端电性连接控制模块214的第二输入端；所述电容单元215的第一端电性连接控制模块214的输出端，所述电容单元215的第二端电性连接机芯板1的输出端；第一斜率K1为对应预设的最小开机时间的电容单元215的第二端的电压上升斜率，第二斜率K2为对应预设的最大开机时间的电容单元215的第二端的电压上升斜率；\n\n[0035]所述机芯板1的输出端向面板驱动单元2输出一输入电压Vin；所述电压上升斜率侦测单元211侦测电容单元215的第二端电压上升斜率，并将电压上升斜率输出至第一比较器212及第二比较器213的同相输入端，所述第一比较器212将电压上升斜率与第一斜率K1进行比较，并向控制模块214输出第一比较结果；所述第二比较器213将电压上升斜率与第二斜率K2进行比较，并向控制模块214输出第二比较结果；所述控制模块214根据所述第一比较结果和第二比较结果改变所述电容单元215的电容量，从而调节电容单元215的第二端的电压上升至输入电压Vin的时间。\n\n[0036]具体地，所述控制模块214可为时序控制器。\n\n[0037]具体地，所述电压上升斜率侦测单元211可为微分器。\n\n[0038]优选地，所述预设的最小开机时间为0.5ms，所述预设的最大开机时间为10ms。\n\n[0039]需要说明的是，由于电容的特性，面板驱动单元2中电压控制单元21的电容单元215与机芯板1输出端电性连接的第二端的电压在机芯板1向面板驱动单元2输出一输入电压Vin后并不会马上达到该输入电压Vin，而是在一定时间内线性上升至输入电压Vin，而该输入电压Vin上升时间影响面板的开机时间，需要将该输入电压Vin上升时间控制在预设的最大开机时间与预设的最小开机时间之间，请参阅图3，输入电压Vin的上升时间与电容单元215第二端的电压斜率存在比例关系，电压上升斜率越大，输入电压Vin上升时间越短，电压上升斜率越小，输入电压Vin上升时间越长，因此本发明利用电压上升斜率侦测单元211侦测电容单元215的第二端的电压上升斜率，将该电压上升斜率分别输入第一比较器212、第二比较器213的同相输入端，并在第一比较器212的反相输入端接收一对应预设的最小开机时间的第一斜率K1，在第二比较器213的反相输入点接收一对应预设的最大开机时间的第二斜率K2，该第一斜率K1及第二斜率K2由输入电压Vin分别与预设的最小开机时间及预设的最大开机时间相除获得，通过第一比较器212、及第二比较器213分别将电容单元215的第二端的电压上升斜率与第一斜率K1与第二斜率K2进行比较得到第一比较结果及第二比较结果，并将第一、第二比较结果输出至控制模块214，控制模块214根据第一、第二比较结果改变电容单元215的电容量，使电容单元215的第二端的电压上升斜率保持在第一斜率K1与第二斜率K2之间，也即将此时的输入电压Vin上升时间保持在预设的最大开机时间与预设的最小开机时间之间，控制面板开机时间符合正常开机时间范围，提高产品品质。\n\n[0040]具体地，本发明的输入电压上升时间控制电路的具体工作过程如下：\n\n[0041]当所述第二比较结果为电压上升斜率小于第二斜率K2时，也即第二比较结果为低电平，所述控制模块控制所述电容单元215的电容量降低，从而减小电容单元215的第二端的电压上升至输入电压Vin的时间；\n\n[0042]当所述第一比较结果为电压上升斜率大于第一斜率K1时，也即第一比较结果为高电平，所述控制模块214控制所述电容单元215的电容量增大，从而增加电容单元215的第二端的电压上升至输入电压Vin的时间；\n\n[0043]当所述第一比较结果为电压上升斜率小于第一斜率K1，且所述第二比较结果为电压上升斜率大于第二斜率K2时，也即第一比较结果为低电位，第二比较结果为高电位时，所述控制模块214不改变电容单元215的电容量，电容单元215的第二端的电压上升至输入电压Vin的时间不变。\n\n[0044]具体地，所述电容单元215包括：多个场效应管Q、及与所述多个场效应管Q一一对应的多个电容C；所述多个场效应管Q的栅极均电性连接控制模块214，源极均接地，漏极电性连接对应电容C的第一端；所述多个电容C的第二端均电性连接机芯板1的输出端；所述控制单元214通过分别控制多个场效应管Q的导通与截止改变第一端接地的电容C的数量，改变电容单元215的电容量。\n\n[0045]进一步地，所述多个场效应管Q均为N型场效应管，所述控制单元214通过输出高电位控制多个场效应管Q开启，通过输出低电位控制多个场效应管Q关闭。\n\n[0046]具体地，所述面板驱动单元2还包括与所述电压控制单元21电性连接的电流控制单元22；所述电压控制单元21通过该电流控制单元22连接负载3；\n\n[0047]所述电流控制单元22包括：光耦合器221、第一电阻R1、第二电阻R2、第三比较器222、及第四比较器223；所述光耦合器221的第一引脚10电性连接机芯板1的输出端，第二引脚20电性连接负载3，第三引脚30电性连接第二电阻R2的第一端，第四引脚40电性连接第一节点A；所述第二电阻R2的第二端接入电源电压VCC；所述第一电阻R1的第一端电性连接第一节点A，第二端接地；所述第三比较器222的同相输入端电性连接第一节点A，反相输入端接收第一比较电压V1，输出端电性连接控制模块214的第三输入端；所述第四比较器223的同相输入端电性连接第一节点A，反相输入端接收第二比较电压V2，输出端电性连接控制模块214的第四输入端；\n\n[0048]所述第一比较电压V1为预设的最小浪涌电流流入光耦合器221的第一引脚10时，第一节点A处的电压；所述第二比较电压V2为预设的最大浪涌电流流入光耦合器221的第一引脚10时，第一节点A处的电压；\n\n[0049]当电容单元215的第二端的电压上升至输入电压Vin时的浪涌电流流入光耦合器221的第一引脚10时，所述第三比较器222将第一节点A处的电压与第一比较电压V1进行比较，并向控制模块214输出第三比较结果；所述第四比较器223将第一节点A处的电压与第二比较电压V2进行比较，并向控制模块214输出第四比较结果；控制模块214根据所述第三比较结果和第四比较结果改变所述电容单元215的电容量，从而调节电容单元215的第二端的电压上升时的浪涌电流。\n\n[0050]具体地，所述光耦合器221包括发光二极管D及光敏三极管VT；所述发光二极管D的阳极为光耦合器221的第一引脚10，阴极为光耦合器221的第二引脚20；所述光敏三极管VT的发射极为光耦合器221的第三引脚30，集电极为光耦合器221的第四引脚40。\n\n[0051]需要说明的是，由于机芯板1的输出端向面板驱动单元2输出输入电压Vin时，电容单元215与机芯板1输出端电性连接的第二端的电压不断上升直至达到输入电压Vin，会有浪涌电流从光耦合器221的第一引脚10也即发光二极管D的阳极流入，经过发光二极管D后从光耦合器221的第二引脚20也即发光二极管D的阴极输出至负载3，此时发光二极管D发光，且发光强度与浪涌电流正相关，故光耦合器221的第四引脚40的电压也即第一节点A的电压为一与浪涌电流正相关的值，通过将第一节点A的电压输入第三比较器222及第四比较器223的同相输入端，同时在第三比较器222及第四比较器223的反相输入端分别接收一第一比较电压V1及第二比较电压V2，所述第三比较器222及第四比较器223分别将第一节点A处的电压与第一比较电压V1、及第二比较电压V2进行比较得到第三比较结果及第四比较结果并输出至控制模块214，控制模块214根据第三比较结果及第四比较结果改变所述电容单元215的电容量，从而调节电容单元215的第二端的电压上升时的浪涌电流保持在预设的最大浪涌电流及最小浪涌电流之间，防止浪涌电流过大，对面板的集成电路造成冲击，进而延长面板使用寿命。\n\n[0052]具体地，当所述第三比较结果为第一节点A处的电压小于第一比较电压V1时，也即第三比较结果为低电平时，所述控制模块214控制所述电容单元215的电容量降低，从而增加电容单元215的第二端的电压上升时的浪涌电流；\n\n[0053]当所述第四比较结果为第一节点A处的电压大于第二比较电压V2时，也即第四比较结果为高电平时，所述控制模块214控制所述电容单元215的电容量增大，从而减小电容单元215的第二端的电压上升时的浪涌电流；\n\n[0054]当所述第三比较结果为第一节点A处的电压大于第一比较电压V1，且第四比较结果为第一节点A处的电压小于第二比较电压V2时，也即第三比较结果为高电平，第四比较结果为低电平，所述控制模块214不改变所述电容单元215的电容量，电容单元215的第二端的电压上升时的浪涌电流不变。\n\n[0055]综上所述，本发明提供的一种输入电压上升时间控制电路，通过在面板驱动单元内设置电压控制单元，电压控制单元包括：电压上升斜率侦测单元、第一比较器、第二比较器、控制单元、及电容单元，电压上升斜率侦测单元侦测电容单元的第二端的电压上升斜率并输出至第一比较器及第二比较器，所述第一比较器、及第二比较器分别将该电压上升斜率与对应预设的最小开机时间的第一斜率及对应预设的最大开机时间的第二斜率进行比较，控制模块根据比较结果改变所述电容单元的电容量，从而调节电容单元的第二端的电压上升至输入电压的时间，控制面板开机时间符合正常开机时间范围，提高产品品质。以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及集成电路技术领域，尤其涉及一种输入电压上升时间控制电路。\n\n背景技术\n\n[0002]随着显示技术的发展，液晶显示器(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]现有市场上的液晶显示装置大部分为背光型液晶显示器，其包括液晶显示面板及背光模组(Backlight Module)。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，两片玻璃基板中间有许多垂直和水平的细小电线，通过通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。\n\n[0004]通常液晶显示面板由彩膜(CF，Color Filter)基板、薄膜晶体管(TFT，Thin FilmTransistor)基板、夹于彩膜基板与薄膜晶体管基板之间的液晶(LC，Liquid Crystal)及密封胶框(Sealant)组成，其成型工艺一般包括：前段阵列(Array)制程(薄膜、黄光、蚀刻及剥膜)、中段成盒(Cell)制程(TFT基板与CF基板贴合)及后段模组组装制程(驱动IC与印刷电路板压合)。其中，前段Array制程主要是形成TFT基板，以便于控制液晶分子的运动；中段Cell制程主要是在TFT基板与CF基板之间添加液晶；后段模组组装制程主要是驱动IC压合与印刷电路板的整合，进而驱动液晶分子转动，显示图像。\n\n[0005]随着消费者对产品品质要求的不断提高，液晶显示面板的开机时间成为消费者关注的焦点之一，而液晶显示面板的开机时间又与液晶显示面板的输入电压的上升时间(输入电压从零到面板开机电压所需的时间)有关，当输入电压的上升时间过短，会导致浪涌电流(Inrush Current)太大，将会冲击面板上的集成电路，进而损坏集成电路，当输入电压的上升时间过长，会导致开机时间过长，引发客户投诉，因此通常液晶显示面板的开机时间需保持在0.5ms到10ms之间。如图1所示，为现有的一种输入电压上升时间控制电路，包括：机芯板101、与所述机芯板101电性连接的面板驱动单元102，所述面板驱动单元102上设有并联的多个电容C10，所述多个电容C10的第一端均与机芯板101电性连接，第二端均接地，所述机芯板101输入一机芯板电压Vin12而后向面板驱动单元102输出一输入电压Vin1，通过控制面板驱动单元102中电容C10的数量控制输入电压Vin1的上升时间，进而控制面板的开机时间，电容C10数量越多，输入电压Vin1上升时间越长，面板的开机时间越长，电容C10数量越少，输入电压Vin1上升时间越短，面板的开机时间越短，该种输入电压上升时间控制电路不能保证该面板驱动单元102搭配任一规格的机芯板101都能使面板的开机时间在0.5ms到10ms之间，将会影响产品品质。\n\n发明内容\n\n[0006]本发明的目的在于提供一种输入电压上升时间控制电路，能够调节输入电压的上升时间，进而控制面板开机时间符合正常开机时间范围，提高产品品质。\n\n[0007]为实现上述目的，本发明提供一种输入电压上升时间控制电路，包括：机芯板、与所述机芯板电性连接的面板驱动单元，所述面板驱动单元电性连接负载；所述面板驱动单元包括：与所述机芯板电性连接的电压控制单元；\n\n[0008]所述电压控制单元包括：电压上升斜率侦测单元、第一比较器、第二比较器、控制模块、及电容单元；所述电压上升斜率侦测单元的输入端电性连接机芯板的输出端，所述电压上升斜率侦测单元的输出端同时电性连接第一比较器的同相输入端、第二比较器的同相输入端；所述第一比较器的反相输入端接收第一斜率，所述第一比较器的输出端电性连接控制模块的第一输入端；所述第二比较器的反相输入端接收第二斜率，所述第二比较器的输出端电性连接控制模块的第二输入端；所述电容单元的第一端电性连接控制模块的输出端，所述电容单元的第二端电性连接机芯板的输出端；第一斜率为对应预设的最小开机时间的电容单元的第二端的电压上升斜率，第二斜率为对应预设的最大开机时间的电容单元的第二端的电压上升斜率；\n\n[0009]所述机芯板的输出端向面板驱动单元输出一输入电压；所述电压上升斜率侦测单元侦测电容单元的第二端的电压上升斜率，并将电压上升斜率输出至第一比较器及第二比较器的同相输入端，所述第一比较器将电压上升斜率与第一斜率进行比较，并向控制模块输出第一比较结果；所述第二比较器将电压上升斜率与第二斜率进行比较，并向控制模块输出第二比较结果；所述控制模块根据所述第一比较结果和第二比较结果改变所述电容单元的电容量，从而调节电容单元的第二端的电压上升至输入电压的时间。\n\n[0010]当所述第二比较结果为电压上升斜率小于第二斜率时，所述控制模块控制所述电容单元的电容量降低，从而减小电容单元的第二端的电压上升至输入电压的时间；\n\n[0011]当所述第一比较结果为电压上升斜率大于第一斜率时，所述控制模块控制所述电容单元的电容量增大，从而增加电容单元的第二端的电压上升至输入电压的时间。\n\n[0012]当所述第一比较结果为电压上升斜率小于第一斜率并大于第二斜率时，所述控制模块不改变电容单元的电容量。\n\n[0013]所述电容单元包括：多个场效应管、及与所述多个场效应管一一对应的多个电容；所述多个场效应管的栅极均电性连接控制模块，源极均接地，漏极电性连接对应电容的第一端；所述多个电容的第二端均电性连接机芯板的输出端；\n\n[0014]所述控制单元通过分别控制多个场效应管的导通与截止改变电容单元的电容量。\n\n[0015]所述面板驱动单元还包括与所述电压控制单元电性连接的电流控制单元；\n\n[0016]所述电流控制单元包括：光耦合器、第一电阻、第二电阻、第三比较器、及第四比较器；所述光耦合器的第一引脚电性连接机芯板的输出端，第二引脚电性连接负载，第三引脚电性连接第二电阻的第一端，第四引脚电性连接第一节点；所述第二电阻的第二端接入电源电压；所述第一电阻的第一端电性连接第一节点，第二端接地；所述第三比较器的同相输入端电性连接第一节点，反相输入端接收第一比较电压，输出端电性连接控制模块第三输入端；所述第四比较器的同相输入端电性连接第一节点，反相输入端接收第二比较电压，输出端电性连接控制模块的第四输入端；\n\n[0017]所述第一比较电压为预设的最小浪涌电流流入光耦合器的第一引脚时，第一节点处的电压；所述第二比较电压为预设的最大浪涌电流流入光耦合器的第一引脚时，第一节点处的电压；\n\n[0018]当电容单元的第二端的电压上升时的浪涌电流流入光耦合器的第一引脚时，所述第三比较器将第一节点处的电压与第一比较电压进行比较，并向控制模块输出第三比较结果；所述第四比较器将第一节点处的电压与第二比较电压进行比较，并向控制模块输出第四比较结果；所述控制模块根据所述第三比较结果和第四比较结果改变所述电容单元的电容量，从而调节电容单元的第二端的电压上升时的浪涌电流。\n\n[0019]所述光耦合器包括发光二极管及光敏三极管；所述发光二极管的阳极为光耦合器的第一引脚，阴极为光耦合器的第二引脚；所述光敏三极管的发射极为光耦合器的第三引脚，集电极为光耦合器的第四引脚。\n\n[0020]当所述第三比较结果为第一节点处的电压小于第一比较电压时，所述控制模块控制所述电容单元的电容量降低，从而增加电容单元的第二端的电压上升时的浪涌电流；\n\n[0021]当所述第四比较结果为第一节点处的电压大于第二比较电压时，所述控制模块控制所述电容单元的电容量增大，从而减小电容单元的第二端的电压上升时的浪涌电流。\n\n[0022]当所述第三比较结果为第一节点处的电压大于第一比较电压，且所述第四比较结果为第一节点处的电压小于第二比较电压时，所述控制模块不改变所述电容单元的电容量。\n\n[0023]所述控制模块为时序控制器；\n\n[0024]所述电压上升斜率侦测单元为微分器。\n\n[0025]所述预设的最小开机时间为0.5ms，所述预设的最大开机时间为10ms。\n\n[0026]本发明的有益效果：本发明的输入电压上升时间控制电路，通过在面板驱动单元内设置电压控制单元，电压控制单元包括：电压上升斜率侦测单元、第一比较器、第二比较器、控制单元、及电容单元，电压上升斜率侦测单元侦测电容单元的第二端的电压上升斜率并输出至第一比较器及第二比较器，所述第一比较器、及第二比较器分别将该电压上升斜率与对应预设的最小开机时间的第一斜率及对应预设的最大开机时间的第二斜率进行比较，控制模块根据比较结果改变所述电容单元的电容量，从而调节电容单元的第二端的电压上升至输入电压的时间，控制面板开机时间符合正常开机时间范围，提高产品品质。\n\n附图说明\n\n[0027]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0028]附图中，\n\n[0029]图1为现有的输入电压上升时间控制电路的电路图；\n\n[0030]图2为本发明的输入电压上升时间控制电路的电路图；\n\n[0031]图3为本发明的输入电压上升时间控制电路电容单元第二端的电压随时间变化的线形图。\n\n具体实施方式\n\n[0032]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0033]请参阅图2，本发明提供一种输入电压上升时间控制电路，包括：机芯板1、与所述机芯板1电性连接的面板驱动单元2，所述面板驱动单元2连接负载3；所述面板驱动单元2包括：与所述机芯板1电性连接的电压控制单元21；\n\n[0034]所述电压控制单元21包括：电压上升斜率侦测单元211、第一比较器212、第二比较器213、控制模块214、及电容单元215；所述电压上升斜率侦测单元211的输入端电性连接机芯板1的输出端，所述电压上升斜率侦测单元211的输出端同时电性连接第一比较器212的同相输入端、第二比较器213的同相输入端；所述第一比较器212的反相输入端接收第一斜率K1，所述第一比较器212的输出端电性连接控制模块214的第一输入端；所述第二比较器213的反相输入端接收第二斜率K2，所述第二比较器212的输出端电性连接控制模块214的第二输入端；所述电容单元215的第一端电性连接控制模块214的输出端，所述电容单元215的第二端电性连接机芯板1的输出端；第一斜率K1为对应预设的最小开机时间的电容单元215的第二端的电压上升斜率，第二斜率K2为对应预设的最大开机时间的电容单元215的第二端的电压上升斜率；\n\n[0035]所述机芯板1的输出端向面板驱动单元2输出一输入电压Vin；所述电压上升斜率侦测单元211侦测电容单元215的第二端电压上升斜率，并将电压上升斜率输出至第一比较器212及第二比较器213的同相输入端，所述第一比较器212将电压上升斜率与第一斜率K1进行比较，并向控制模块214输出第一比较结果；所述第二比较器213将电压上升斜率与第二斜率K2进行比较，并向控制模块214输出第二比较结果；所述控制模块214根据所述第一比较结果和第二比较结果改变所述电容单元215的电容量，从而调节电容单元215的第二端的电压上升至输入电压Vin的时间。\n\n[0036]具体地，所述控制模块214可为时序控制器。\n\n[0037]具体地，所述电压上升斜率侦测单元211可为微分器。\n\n[0038]优选地，所述预设的最小开机时间为0.5ms，所述预设的最大开机时间为10ms。\n\n[0039]需要说明的是，由于电容的特性，面板驱动单元2中电压控制单元21的电容单元215与机芯板1输出端电性连接的第二端的电压在机芯板1向面板驱动单元2输出一输入电压Vin后并不会马上达到该输入电压Vin，而是在一定时间内线性上升至输入电压Vin，而该输入电压Vin上升时间影响面板的开机时间，需要将该输入电压Vin上升时间控制在预设的最大开机时间与预设的最小开机时间之间，请参阅图3，输入电压Vin的上升时间与电容单元215第二端的电压斜率存在比例关系，电压上升斜率越大，输入电压Vin上升时间越短，电压上升斜率越小，输入电压Vin上升时间越长，因此本发明利用电压上升斜率侦测单元211侦测电容单元215的第二端的电压上升斜率，将该电压上升斜率分别输入第一比较器212、第二比较器213的同相输入端，并在第一比较器212的反相输入端接收一对应预设的最小开机时间的第一斜率K1，在第二比较器213的反相输入点接收一对应预设的最大开机时间的第二斜率K2，该第一斜率K1及第二斜率K2由输入电压Vin分别与预设的最小开机时间及预设的最大开机时间相除获得，通过第一比较器212、及第二比较器213分别将电容单元215的第二端的电压上升斜率与第一斜率K1与第二斜率K2进行比较得到第一比较结果及第二比较结果，并将第一、第二比较结果输出至控制模块214，控制模块214根据第一、第二比较结果改变电容单元215的电容量，使电容单元215的第二端的电压上升斜率保持在第一斜率K1与第二斜率K2之间，也即将此时的输入电压Vin上升时间保持在预设的最大开机时间与预设的最小开机时间之间，控制面板开机时间符合正常开机时间范围，提高产品品质。\n\n[0040]具体地，本发明的输入电压上升时间控制电路的具体工作过程如下：\n\n[0041]当所述第二比较结果为电压上升斜率小于第二斜率K2时，也即第二比较结果为低电平，所述控制模块控制所述电容单元215的电容量降低，从而减小电容单元215的第二端的电压上升至输入电压Vin的时间；\n\n[0042]当所述第一比较结果为电压上升斜率大于第一斜率K1时，也即第一比较结果为高电平，所述控制模块214控制所述电容单元215的电容量增大，从而增加电容单元215的第二端的电压上升至输入电压Vin的时间；\n\n[0043]当所述第一比较结果为电压上升斜率小于第一斜率K1，且所述第二比较结果为电压上升斜率大于第二斜率K2时，也即第一比较结果为低电位，第二比较结果为高电位时，所述控制模块214不改变电容单元215的电容量，电容单元215的第二端的电压上升至输入电压Vin的时间不变。\n\n[0044]具体地，所述电容单元215包括：多个场效应管Q、及与所述多个场效应管Q一一对应的多个电容C；所述多个场效应管Q的栅极均电性连接控制模块214，源极均接地，漏极电性连接对应电容C的第一端；所述多个电容C的第二端均电性连接机芯板1的输出端；所述控制单元214通过分别控制多个场效应管Q的导通与截止改变第一端接地的电容C的数量，改变电容单元215的电容量。\n\n[0045]进一步地，所述多个场效应管Q均为N型场效应管，所述控制单元214通过输出高电位控制多个场效应管Q开启，通过输出低电位控制多个场效应管Q关闭。\n\n[0046]具体地，所述面板驱动单元2还包括与所述电压控制单元21电性连接的电流控制单元22；所述电压控制单元21通过该电流控制单元22连接负载3；\n\n[0047]所述电流控制单元22包括：光耦合器221、第一电阻R1、第二电阻R2、第三比较器222、及第四比较器223；所述光耦合器221的第一引脚10电性连接机芯板1的输出端，第二引脚20电性连接负载3，第三引脚30电性连接第二电阻R2的第一端，第四引脚40电性连接第一节点A；所述第二电阻R2的第二端接入电源电压VCC；所述第一电阻R1的第一端电性连接第一节点A，第二端接地；所述第三比较器222的同相输入端电性连接第一节点A，反相输入端接收第一比较电压V1，输出端电性连接控制模块214的第三输入端；所述第四比较器223的同相输入端电性连接第一节点A，反相输入端接收第二比较电压V2，输出端电性连接控制模块214的第四输入端；\n\n[0048]所述第一比较电压V1为预设的最小浪涌电流流入光耦合器221的第一引脚10时，第一节点A处的电压；所述第二比较电压V2为预设的最大浪涌电流流入光耦合器221的第一引脚10时，第一节点A处的电压；\n\n[0049]当电容单元215的第二端的电压上升至输入电压Vin时的浪涌电流流入光耦合器221的第一引脚10时，所述第三比较器222将第一节点A处的电压与第一比较电压V1进行比较，并向控制模块214输出第三比较结果；所述第四比较器223将第一节点A处的电压与第二比较电压V2进行比较，并向控制模块214输出第四比较结果；控制模块214根据所述第三比较结果和第四比较结果改变所述电容单元215的电容量，从而调节电容单元215的第二端的电压上升时的浪涌电流。\n\n[0050]具体地，所述光耦合器221包括发光二极管D及光敏三极管VT；所述发光二极管D的阳极为光耦合器221的第一引脚10，阴极为光耦合器221的第二引脚20；所述光敏三极管VT的发射极为光耦合器221的第三引脚30，集电极为光耦合器221的第四引脚40。\n\n[0051]需要说明的是，由于机芯板1的输出端向面板驱动单元2输出输入电压Vin时，电容单元215与机芯板1输出端电性连接的第二端的电压不断上升直至达到输入电压Vin，会有浪涌电流从光耦合器221的第一引脚10也即发光二极管D的阳极流入，经过发光二极管D后从光耦合器221的第二引脚20也即发光二极管D的阴极输出至负载3，此时发光二极管D发光，且发光强度与浪涌电流正相关，故光耦合器221的第四引脚40的电压也即第一节点A的电压为一与浪涌电流正相关的值，通过将第一节点A的电压输入第三比较器222及第四比较器223的同相输入端，同时在第三比较器222及第四比较器223的反相输入端分别接收一第一比较电压V1及第二比较电压V2，所述第三比较器222及第四比较器223分别将第一节点A处的电压与第一比较电压V1、及第二比较电压V2进行比较得到第三比较结果及第四比较结果并输出至控制模块214，控制模块214根据第三比较结果及第四比较结果改变所述电容单元215的电容量，从而调节电容单元215的第二端的电压上升时的浪涌电流保持在预设的最大浪涌电流及最小浪涌电流之间，防止浪涌电流过大，对面板的集成电路造成冲击，进而延长面板使用寿命。\n\n[0052]具体地，当所述第三比较结果为第一节点A处的电压小于第一比较电压V1时，也即第三比较结果为低电平时，所述控制模块214控制所述电容单元215的电容量降低，从而增加电容单元215的第二端的电压上升时的浪涌电流；\n\n[0053]当所述第四比较结果为第一节点A处的电压大于第二比较电压V2时，也即第四比较结果为高电平时，所述控制模块214控制所述电容单元215的电容量增大，从而减小电容单元215的第二端的电压上升时的浪涌电流；\n\n[0054]当所述第三比较结果为第一节点A处的电压大于第一比较电压V1，且第四比较结果为第一节点A处的电压小于第二比较电压V2时，也即第三比较结果为高电平，第四比较结果为低电平，所述控制模块214不改变所述电容单元215的电容量，电容单元215的第二端的电压上升时的浪涌电流不变。\n\n[0055]综上所述，本发明提供的一种输入电压上升时间控制电路，通过在面板驱动单元内设置电压控制单元，电压控制单元包括：电压上升斜率侦测单元、第一比较器、第二比较器、控制单元、及电容单元，电压上升斜率侦测单元侦测电容单元的第二端的电压上升斜率并输出至第一比较器及第二比较器，所述第一比较器、及第二比较器分别将该电压上升斜率与对应预设的最小开机时间的第一斜率及对应预设的最大开机时间的第二斜率进行比较，控制模块根据比较结果改变所述电容单元的电容量，从而调节电容单元的第二端的电压上升至输入电压的时间，控制面板开机时间符合正常开机时间范围，提高产品品质。以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10584, 23638, '技术领域\n\n[0001]本发明涉及显示技术领域，特别是涉及一种像素结构及制造方法。\n\n背景技术\n\n[0002]随着显示技术的高速发展，关于微发光二极管(Micro LED)的显示应用也越来越受到业界关注。\n\n[0003]Micro LED作为电流驱动的自发光单元，每个独立的发光单元都向空间中的各个方向均匀发光，因此在这一过程中损失多数的光能量。\n\n发明内容\n\n[0004]本发明提供一种像素结构及制造方法，能够提高微发光二极管光利用率。\n\n[0005]为解决上述技术问题，本发明采用的一种技术方案是：提供一种提高微发光二极管光利用率的像素制造方法，所述方法包括：准备一基板；在所述基板上制造具有容置腔及隔离区的黑色光阻层；在所述黑色光阻层除所述隔离区外的表面涂布聚电解质溶液风干并形成聚电解质层；在所述聚电解质层表面涂布金属纳米粒子溶液风干并形成金属粒子层；将所述微发光二极管对位转移至所述黑色光阻层中。\n\n[0006]为解决上述技术问题，本发明采用的又一种技术方案是：提供一种像素结构，所述像素结构包括：基板；黑色光阻层，沉积于所述基板上，所述黑色光阻层包括容置腔及隔离区，所述隔离区设置于所述容置腔内；聚电解质层，所述聚电解质层涂覆于除所述隔离区外的所述黑色光阻层上；金属纳米粒子层，所述金属纳米粒子层覆盖于所述聚电解质层上；微发光二极管，所述微发光二极管设置于所述隔离区上。\n\n[0007]本发明的有益效果是：区别于现有技术的情况，本发明通过形成具有反射层的像素结构，能够提高微发光二极管的光利用率。\n\n附图说明\n\n[0008]图1为本发明像素结构制作方法一实施例的流程示意图；\n\n[0009]图2为本发明像素结构一实施方式的结构示意图。\n\n具体实施方式\n\n[0010]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0011]请参阅图1，图1为本发明像素结构制作方法一实施例，该方法包括如下步骤：\n\n[0012]S110，准备一基板。\n\n[0013]其中，该基板可以为透明材质，具体可以是玻璃或者透明塑料等。\n\n[0014]S120，在基板上制造具有容置腔及隔离区的黑色光阻层。\n\n[0015]在步骤S120中，该具有容置腔及隔离区的黑色光阻层的形成可以采用光刻法一步成型。其中，黑色光阻层是一种有机化合物，它受紫外光曝光后，在显影液中的溶解度会发生变化。一般光阻以液态涂覆在基板表面上，曝光后烘烤成固态，其作用是将掩膜板上的图形转移到基板表面的氧化层中，以便在后续工序中，保护下面的材料(刻蚀或离子注入等)。\n\n[0016]光刻法指在通过一系列生产步骤，将基板表面的光阻层的特定部分除去的工艺，在此之后基板表面会留下带有微图形结构的光阻层。通过光刻工艺过程，最终在基板表面上保留的是特征图形部分。且光刻法的三基本要素为控制光照(主要为紫外光)、掩模板以及光刻胶(光阻)。\n\n[0017]在本实施例中，该具有容置腔及隔离区的黑色光阻层可以通过光刻法一步成型。在其它实施例中，该黑色光阻层也可以通过光刻法两步成型，即先形成具有容置腔结构的黑色光阻层，再在容置腔中进一步形成隔离区结构。其中，该隔离区可以设置为凸起、凹陷或沟槽等结构，且后续的聚电解质溶液和金属纳米粒子溶液都不会涂布在该隔离区部分，目的是隔离微发光二极管两端的引脚，以使得微发光二极管不会被短路。在本实施例中，该隔离区设置成凸起结构，以方便微发光二极管的放置。\n\n[0018]S130，在黑色光阻层除隔离区外的表面涂布聚电解质溶液风干并形成聚电解质层。\n\n[0019]在步骤S130中，聚电解质层以及后续的膜层结构的涂布利用层层组装技术(Layer-by-Layer,LBL)。层层组装技术是利用逐层交替沉积的方法，借助各层分子间的弱相互作用(如静电引力、氢键、配位键等)，使层与层自发地缔合形成完整结构、性能稳定、具有某种特定功能的分子聚集体或超分子结构的过程。本实施例中，主要采用静电层层组装技术即利用离子间的静电作用作为成膜的驱动力。在由上述光刻工艺得到均匀涂布的具有容置腔及隔离区结构的黑色光阻层上涂布聚电解质溶液风干后形成聚电解质层。其中，该聚电解质溶液可以为聚二烯丙基二甲基氯化铵、聚丙烯酸钠、聚二甲基二烯丙基氯化铵以及丙烯酸-乙烯基吡啶共聚物等的一种。在具体的实施例中，聚电解质溶液选用聚二烯丙基二甲基氯化铵(Poly Dimethyl Diallyl Ammonium chloride，PDDA)溶液，其浓度为2mg/mL，且在涂布的过程中避开黑色光阻层的隔离区结构。风刀吹干后，形成聚二烯丙基二甲基氯化铵膜层，即聚电解质膜。\n\n[0020]S140，在聚电解质层表面涂布金属纳米粒子溶液风干并形成金属粒子层。\n\n[0021]步骤S140中，在聚电解质层上进一步涂布金属纳米粒子溶液。其中，该金属纳米粒子溶液可以包括Au、Ag、Cu、Ni、Co、Pt中的至少一种和/或由Au、Ag、Cu、Ni、Co、Pt中至少两种形成的合金。选用的金属纳米粒子溶液应具有较高的消光系数，所谓消光系数是被测溶液对光的吸收大小值。在本实施例中，金属纳米粒子溶液选用Ag纳米粒子溶液涂布于聚电解质层上风干并形成Ag纳米粒子层。也即是以Ag纳米粒子层作为反射层，当光束由空气入射到该Ag纳米粒子层表面时，进入Ag纳米粒子层内的光振幅迅速衰减，使得进入Ag纳米粒子层内的光能相应减少，而反射光能增加。且选用的金属粒子溶液的消光系数越大，光振幅衰减越迅速，进入金属内部的光能越少，反射率越高。\n\n[0022]此外，步骤S130和步骤S140中，聚电解质溶液和金属纳米粒子溶液的电性相反，即在步骤S130中，聚电解质溶液选用的是阳离子聚二烯丙基二甲基氯化铵，步骤S140中，金属纳米粒子溶液选用带负电的Ag纳米粒子溶液。在其它实施例中，聚电解质溶液和金属纳米粒子溶液的选取只要满足二者的电性相反即可。且利用层层组装技术交替沉积技术可以控制组装膜层的结构和厚度。在具体实施例中，若还需要增加金属纳米粒子层的厚度，则重复上述步骤S130和步骤S140即可，即在金属纳米粒子层上再涂布一层聚电解质溶液风干形成聚电解质层，再在该聚电解质层上涂布金属纳米粒子溶液风干形成金属纳米粒子层，如此反复上述步骤即可得到需要的膜层厚度。\n\n[0023]S150，将微发光二极管对位转移至黑色光阻层中。\n\n[0024]通过层层组装技术交替沉积技术形成所需要的金属纳米粒子层厚度后，将微发光二极管(Micro LED)对位转移至黑色光阻层中。具体地，将微发光二极管对位转移至黑色光阻层的隔离区结构上。\n\n[0025]其中，微发光二极管是指利用成熟的发光二极管制备工艺，规模化的在蓝宝石类的基板上通过分子束外延的生长出来的尺寸在10～50um的微发光二极管单元，若要形成图案化的不同颜色的微发光二极管构成显示区域，则需要通过高精度的转移技术将其转移到玻璃基板上。由于制作微发光二极管的蓝宝石基板尺寸基本上就是硅晶元的尺寸，而制作显示器则是尺寸大得多的玻璃基板，因此必然需要进行多次转运，其中对该微发光二极管的转移需用到特殊的传送工具，该传送工具的作用是将微发光二极管从蓝宝石基板上对位转移至上述黑色光阻层的隔离区上，过程可以简单描述为：首先将传送工具与微发光二极管接触，向传送工具施加电压以产生对微发光二极管的夹持压强，用传送工具拾起微发光二极管，使黑色光阻层的隔离区结构与微发光二极管接触，最后将微发光二极管释放到隔离区结构上。\n\n[0026]进一步地，将该微发光二极管对位转移至黑色光阻层的隔离区结构上后，由于上述金属纳米粒子层的光学特性，可以使微发光二极管向周围方向发射的光线，经过折射与反射重新汇聚到出光方向，减少光损失，提高光利用率。\n\n[0027]上述实施方式，通过利用层层组装技术以形成具有反射层的像素结构，能够提高微发光二极管的光利用率。\n\n[0028]请参阅图2，图2为本发明像素结构一实施方式的结构示意图。如图2，该像素10包括：基板11、黑色光阻层12、聚电解质层13、金属纳米粒子层14以及微发光二极管15。\n\n[0029]其中，基板11可以为透明材质，具体可以是玻璃或者透明塑料等。\n\n[0030]黑色光阻层12，沉积于基板11上，该黑色光阻层12包括容置腔121以及隔离区122，且隔离区122设置于容置腔121内。具体地，该黑色光阻12是一种有机化合物，它受紫外光曝光后，在显影液中的溶解度会发生变化。一般光阻以液态涂覆在基板表面上，曝光后烘烤成固态，其作用是将掩膜板上的图形转移到基板11表面的氧化层中，以便在后续工序中，保护下面的材料(刻蚀或离子注入等)，该黑色光阻层12也可以通过光刻法一步成型，也可以通过光刻法两步成型，即先形成具有容置腔121结构的黑色光阻层12，再在容置腔121中进一步形成隔离区122结构。其中，该隔离区122可以设置为凸起、凹陷或沟槽等结构，且后续的聚电解质层和金属纳米粒子层都不会涂布在该隔离区122部分，目的是隔离微发光二极管15两端的引脚，以使得微发光二极管15不会被短路。在本实施例中，该隔离区122设置成凸起结构，以方便微发光二极管15的放置。\n\n[0031]聚电解质层13，涂覆于除隔离区122外的黑色光阻层12上。其中，该聚电解质层13可以为聚二烯丙基二甲基氯化铵、聚丙烯酸钠、聚二甲基二烯丙基氯化铵以及丙烯酸-乙烯基吡啶共聚物等的一种，在具体实施方式中，该聚电解质层13选用聚二烯丙基二甲基氯化铵。\n\n[0032]金属纳米粒子层14，覆盖于聚电解质层13上，该金属纳米粒子包括Au、Ag、Cu、Ni、Co、Pt中的至少一种和/或由Au、Ag、Cu、Ni、Co、Pt中至少两种形成的合金，且选用的金属纳米粒子层应具有较高的消光系数。在本实施例中，选用Ag纳米粒子层作为反射层，当光束由空气入射到该Ag纳米粒子层表面时，进入Ag纳米粒子层内的光振幅迅速衰减，使得进入Ag纳米粒子层内的光能相应减少，而反射光能增加。且选用的金属粒子层的消光系数越大，光振幅衰减越迅速，进入金属内部的光能越少，反射率越高。\n\n[0033]在具体实施例中，上述的聚电解质层13和金属纳米粒子层14电性相反，即上述的聚二烯丙基二甲基氯化铵薄膜层带正电，Ag纳米粒子层带负电，二者通过静电作用交替沉积，以达到需要厚度的金属纳米粒子膜层。在其它实施例中，聚电解质层和金属纳米粒子层的选取只要满足二者的电性相反即可。\n\n[0034]微发光二极管15，设置于隔离区122上。其中，该微发光二极管15是指利用成熟的发光二极管制备工艺，规模化的在蓝宝石类的基板上通过分子束外延的生长出来的尺寸在10～50um的微发光二极管单元。且其通过对位转移将其设置在黑色光阻层12的隔离区122结构上，且具体设置方法参照上文描述，此处不再赘述。由于上述金属纳米粒子层的光学特性，可以使微发光二极管向周围方向发射的光线，经过折射与反射重新汇聚到出光方向，减少光损失，提高光利用率。\n\n[0035]综上所述，本领域技术人员容易理解，本发明提供一种像素结构及制造方法，通过利用层层组装技术以形成具有反射层的像素结构，能够提高微发光二极管的光利用率。\n\n[0036]以上仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。', '技术领域\n\n[0001]本发明涉及显示技术领域，特别是涉及一种像素结构及制造方法。\n\n背景技术\n\n[0002]随着显示技术的高速发展，关于微发光二极管(Micro LED)的显示应用也越来越受到业界关注。\n\n[0003]Micro LED作为电流驱动的自发光单元，每个独立的发光单元都向空间中的各个方向均匀发光，因此在这一过程中损失多数的光能量。\n\n发明内容\n\n[0004]本发明提供一种像素结构及制造方法，能够提高微发光二极管光利用率。\n\n[0005]为解决上述技术问题，本发明采用的一种技术方案是：提供一种提高微发光二极管光利用率的像素制造方法，所述方法包括：准备一基板；在所述基板上制造具有容置腔及隔离区的黑色光阻层；在所述黑色光阻层除所述隔离区外的表面涂布聚电解质溶液风干并形成聚电解质层；在所述聚电解质层表面涂布金属纳米粒子溶液风干并形成金属粒子层；将所述微发光二极管对位转移至所述黑色光阻层中。\n\n[0006]为解决上述技术问题，本发明采用的又一种技术方案是：提供一种像素结构，所述像素结构包括：基板；黑色光阻层，沉积于所述基板上，所述黑色光阻层包括容置腔及隔离区，所述隔离区设置于所述容置腔内；聚电解质层，所述聚电解质层涂覆于除所述隔离区外的所述黑色光阻层上；金属纳米粒子层，所述金属纳米粒子层覆盖于所述聚电解质层上；微发光二极管，所述微发光二极管设置于所述隔离区上。\n\n[0007]本发明的有益效果是：区别于现有技术的情况，本发明通过形成具有反射层的像素结构，能够提高微发光二极管的光利用率。\n\n附图说明\n\n[0008]图1为本发明像素结构制作方法一实施例的流程示意图；\n\n[0009]图2为本发明像素结构一实施方式的结构示意图。\n\n具体实施方式\n\n[0010]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0011]请参阅图1，图1为本发明像素结构制作方法一实施例，该方法包括如下步骤：\n\n[0012]S110，准备一基板。\n\n[0013]其中，该基板可以为透明材质，具体可以是玻璃或者透明塑料等。\n\n[0014]S120，在基板上制造具有容置腔及隔离区的黑色光阻层。\n\n[0015]在步骤S120中，该具有容置腔及隔离区的黑色光阻层的形成可以采用光刻法一步成型。其中，黑色光阻层是一种有机化合物，它受紫外光曝光后，在显影液中的溶解度会发生变化。一般光阻以液态涂覆在基板表面上，曝光后烘烤成固态，其作用是将掩膜板上的图形转移到基板表面的氧化层中，以便在后续工序中，保护下面的材料(刻蚀或离子注入等)。\n\n[0016]光刻法指在通过一系列生产步骤，将基板表面的光阻层的特定部分除去的工艺，在此之后基板表面会留下带有微图形结构的光阻层。通过光刻工艺过程，最终在基板表面上保留的是特征图形部分。且光刻法的三基本要素为控制光照(主要为紫外光)、掩模板以及光刻胶(光阻)。\n\n[0017]在本实施例中，该具有容置腔及隔离区的黑色光阻层可以通过光刻法一步成型。在其它实施例中，该黑色光阻层也可以通过光刻法两步成型，即先形成具有容置腔结构的黑色光阻层，再在容置腔中进一步形成隔离区结构。其中，该隔离区可以设置为凸起、凹陷或沟槽等结构，且后续的聚电解质溶液和金属纳米粒子溶液都不会涂布在该隔离区部分，目的是隔离微发光二极管两端的引脚，以使得微发光二极管不会被短路。在本实施例中，该隔离区设置成凸起结构，以方便微发光二极管的放置。\n\n[0018]S130，在黑色光阻层除隔离区外的表面涂布聚电解质溶液风干并形成聚电解质层。\n\n[0019]在步骤S130中，聚电解质层以及后续的膜层结构的涂布利用层层组装技术(Layer-by-Layer,LBL)。层层组装技术是利用逐层交替沉积的方法，借助各层分子间的弱相互作用(如静电引力、氢键、配位键等)，使层与层自发地缔合形成完整结构、性能稳定、具有某种特定功能的分子聚集体或超分子结构的过程。本实施例中，主要采用静电层层组装技术即利用离子间的静电作用作为成膜的驱动力。在由上述光刻工艺得到均匀涂布的具有容置腔及隔离区结构的黑色光阻层上涂布聚电解质溶液风干后形成聚电解质层。其中，该聚电解质溶液可以为聚二烯丙基二甲基氯化铵、聚丙烯酸钠、聚二甲基二烯丙基氯化铵以及丙烯酸-乙烯基吡啶共聚物等的一种。在具体的实施例中，聚电解质溶液选用聚二烯丙基二甲基氯化铵(Poly Dimethyl Diallyl Ammonium chloride，PDDA)溶液，其浓度为2mg/mL，且在涂布的过程中避开黑色光阻层的隔离区结构。风刀吹干后，形成聚二烯丙基二甲基氯化铵膜层，即聚电解质膜。\n\n[0020]S140，在聚电解质层表面涂布金属纳米粒子溶液风干并形成金属粒子层。\n\n[0021]步骤S140中，在聚电解质层上进一步涂布金属纳米粒子溶液。其中，该金属纳米粒子溶液可以包括Au、Ag、Cu、Ni、Co、Pt中的至少一种和/或由Au、Ag、Cu、Ni、Co、Pt中至少两种形成的合金。选用的金属纳米粒子溶液应具有较高的消光系数，所谓消光系数是被测溶液对光的吸收大小值。在本实施例中，金属纳米粒子溶液选用Ag纳米粒子溶液涂布于聚电解质层上风干并形成Ag纳米粒子层。也即是以Ag纳米粒子层作为反射层，当光束由空气入射到该Ag纳米粒子层表面时，进入Ag纳米粒子层内的光振幅迅速衰减，使得进入Ag纳米粒子层内的光能相应减少，而反射光能增加。且选用的金属粒子溶液的消光系数越大，光振幅衰减越迅速，进入金属内部的光能越少，反射率越高。\n\n[0022]此外，步骤S130和步骤S140中，聚电解质溶液和金属纳米粒子溶液的电性相反，即在步骤S130中，聚电解质溶液选用的是阳离子聚二烯丙基二甲基氯化铵，步骤S140中，金属纳米粒子溶液选用带负电的Ag纳米粒子溶液。在其它实施例中，聚电解质溶液和金属纳米粒子溶液的选取只要满足二者的电性相反即可。且利用层层组装技术交替沉积技术可以控制组装膜层的结构和厚度。在具体实施例中，若还需要增加金属纳米粒子层的厚度，则重复上述步骤S130和步骤S140即可，即在金属纳米粒子层上再涂布一层聚电解质溶液风干形成聚电解质层，再在该聚电解质层上涂布金属纳米粒子溶液风干形成金属纳米粒子层，如此反复上述步骤即可得到需要的膜层厚度。\n\n[0023]S150，将微发光二极管对位转移至黑色光阻层中。\n\n[0024]通过层层组装技术交替沉积技术形成所需要的金属纳米粒子层厚度后，将微发光二极管(Micro LED)对位转移至黑色光阻层中。具体地，将微发光二极管对位转移至黑色光阻层的隔离区结构上。\n\n[0025]其中，微发光二极管是指利用成熟的发光二极管制备工艺，规模化的在蓝宝石类的基板上通过分子束外延的生长出来的尺寸在10～50um的微发光二极管单元，若要形成图案化的不同颜色的微发光二极管构成显示区域，则需要通过高精度的转移技术将其转移到玻璃基板上。由于制作微发光二极管的蓝宝石基板尺寸基本上就是硅晶元的尺寸，而制作显示器则是尺寸大得多的玻璃基板，因此必然需要进行多次转运，其中对该微发光二极管的转移需用到特殊的传送工具，该传送工具的作用是将微发光二极管从蓝宝石基板上对位转移至上述黑色光阻层的隔离区上，过程可以简单描述为：首先将传送工具与微发光二极管接触，向传送工具施加电压以产生对微发光二极管的夹持压强，用传送工具拾起微发光二极管，使黑色光阻层的隔离区结构与微发光二极管接触，最后将微发光二极管释放到隔离区结构上。\n\n[0026]进一步地，将该微发光二极管对位转移至黑色光阻层的隔离区结构上后，由于上述金属纳米粒子层的光学特性，可以使微发光二极管向周围方向发射的光线，经过折射与反射重新汇聚到出光方向，减少光损失，提高光利用率。\n\n[0027]上述实施方式，通过利用层层组装技术以形成具有反射层的像素结构，能够提高微发光二极管的光利用率。\n\n[0028]请参阅图2，图2为本发明像素结构一实施方式的结构示意图。如图2，该像素10包括：基板11、黑色光阻层12、聚电解质层13、金属纳米粒子层14以及微发光二极管15。\n\n[0029]其中，基板11可以为透明材质，具体可以是玻璃或者透明塑料等。\n\n[0030]黑色光阻层12，沉积于基板11上，该黑色光阻层12包括容置腔121以及隔离区122，且隔离区122设置于容置腔121内。具体地，该黑色光阻12是一种有机化合物，它受紫外光曝光后，在显影液中的溶解度会发生变化。一般光阻以液态涂覆在基板表面上，曝光后烘烤成固态，其作用是将掩膜板上的图形转移到基板11表面的氧化层中，以便在后续工序中，保护下面的材料(刻蚀或离子注入等)，该黑色光阻层12也可以通过光刻法一步成型，也可以通过光刻法两步成型，即先形成具有容置腔121结构的黑色光阻层12，再在容置腔121中进一步形成隔离区122结构。其中，该隔离区122可以设置为凸起、凹陷或沟槽等结构，且后续的聚电解质层和金属纳米粒子层都不会涂布在该隔离区122部分，目的是隔离微发光二极管15两端的引脚，以使得微发光二极管15不会被短路。在本实施例中，该隔离区122设置成凸起结构，以方便微发光二极管15的放置。\n\n[0031]聚电解质层13，涂覆于除隔离区122外的黑色光阻层12上。其中，该聚电解质层13可以为聚二烯丙基二甲基氯化铵、聚丙烯酸钠、聚二甲基二烯丙基氯化铵以及丙烯酸-乙烯基吡啶共聚物等的一种，在具体实施方式中，该聚电解质层13选用聚二烯丙基二甲基氯化铵。\n\n[0032]金属纳米粒子层14，覆盖于聚电解质层13上，该金属纳米粒子包括Au、Ag、Cu、Ni、Co、Pt中的至少一种和/或由Au、Ag、Cu、Ni、Co、Pt中至少两种形成的合金，且选用的金属纳米粒子层应具有较高的消光系数。在本实施例中，选用Ag纳米粒子层作为反射层，当光束由空气入射到该Ag纳米粒子层表面时，进入Ag纳米粒子层内的光振幅迅速衰减，使得进入Ag纳米粒子层内的光能相应减少，而反射光能增加。且选用的金属粒子层的消光系数越大，光振幅衰减越迅速，进入金属内部的光能越少，反射率越高。\n\n[0033]在具体实施例中，上述的聚电解质层13和金属纳米粒子层14电性相反，即上述的聚二烯丙基二甲基氯化铵薄膜层带正电，Ag纳米粒子层带负电，二者通过静电作用交替沉积，以达到需要厚度的金属纳米粒子膜层。在其它实施例中，聚电解质层和金属纳米粒子层的选取只要满足二者的电性相反即可。\n\n[0034]微发光二极管15，设置于隔离区122上。其中，该微发光二极管15是指利用成熟的发光二极管制备工艺，规模化的在蓝宝石类的基板上通过分子束外延的生长出来的尺寸在10～50um的微发光二极管单元。且其通过对位转移将其设置在黑色光阻层12的隔离区122结构上，且具体设置方法参照上文描述，此处不再赘述。由于上述金属纳米粒子层的光学特性，可以使微发光二极管向周围方向发射的光线，经过折射与反射重新汇聚到出光方向，减少光损失，提高光利用率。\n\n[0035]综上所述，本领域技术人员容易理解，本发明提供一种像素结构及制造方法，通过利用层层组装技术以形成具有反射层的像素结构，能够提高微发光二极管的光利用率。\n\n[0036]以上仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。');
INSERT INTO `os_patent_instruction_text` VALUES (10585, 23639, '技术领域\n\n[0001]本发明涉及一种微发光二极管显示技术领域，特别是一种微发光二极管的转印装置。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED，μLED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，μLED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但μLED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]微转印(Micro Transfer Printing)技术是目前制备μLED显示装置的主流方法，具体制备过程为：首先在蓝宝石类基板生长出微发光二极管，然后通过激光剥离技术(Laser lift-off，LLO)将微发光二极管裸芯片(bare chip)从蓝宝石类基板上分离开，随后使用一个图案化的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)传送头将微发光二极管裸芯片从蓝宝石类基板吸附起来，并将PDMS传送头与接收基板进行对位，随后将PDMS传送头所吸附的微发光二极管裸芯片贴附到接收基板上预设的位置，再剥离PDMS传送头，即可完成将微发光二极管裸芯片转移到接收基板上，进而制得μLED显示装置。\n\n[0005]而目前的转印一般采用通电吸附或PDMS的方式粘附进行转印，当使用PDMS方式进行剥离时存在较难控制剥离效果；当使用通电吸附时则需要对每个吸附头进行导通，不仅复杂而且剥离效果欠佳；目前还有一种通过温度控制来进行微发光二极管转印的技术，其原理是通过低温剥离型胶水，其转印的过程分为吸附-转移-降温最终完成转印，但是往往降温和完成转印的过程速率较慢，且不利于重复进行的高效转印。\n\n发明内容\n\n[0006]为克服现有技术的不足，本发明提供一种微发光二极管的转印装置，从而提高转印的效率。\n\n[0007]本发明提供了一种微发光二极管的转印装置，包括机架，在机架上设有加热面朝下的加热装置以及设于加热装置下方可移动的冷却装置，所述加热装置的加热面用于承载具有微发光二极管的供给衬底，供给衬底通过固定件固定于加热面上，所述冷却装置的冷却面用于承载接收衬底；所述冷却装置的冷却面与加热装置的加热面相对，在加热装置与冷却装置之间设有滚筒机构，滚筒机构固定在机架上，所述滚筒机构上设有可循环转动的传送带，所述传送带由转印膜片构成，在传送带的外表面上设有温控胶，通过传送带上的温控胶将被加热的供给衬底上的微发光二极管粘附后，滚筒机构的转动带动传送带移动至接收衬底一侧，通过冷却装置对接收衬底降温，温控胶失去粘性将粘附在传送带上的微发光二极管剥离，完成微发光二极管的转印，在机架上设有电源，电源与滚筒机构、加热装置、冷却装置电连接。\n\n[0008]进一步地，所述滚筒机构的转动方向与冷却装置的移动方向相反。\n\n[0009]进一步地，所述冷却装置上设有与电源连接的传动机构，传动机构用于驱动冷却装置移动。\n\n[0010]进一步地，所述滚筒机构包括至少一个驱动滚筒以及至少一个从动滚筒，所述传送带套在驱动滚筒与从动滚筒上，驱动滚筒与电源连接。\n\n[0011]进一步地，所述驱动滚筒为电动滚筒。\n\n[0012]进一步地，所述传送带的表面上阵列排布有矩形凸起，相邻两个矩形凸起的间距相等，温控胶覆盖在矩形凸起上以及矩形凸起之间的间隙内。\n\n[0013]进一步地，所述冷却装置的冷却介质为液氮或干冰。\n\n[0014]进一步地，所述传动机构包括固定在机架下端的与电源连接的驱动电机、设于驱动电机输出轴上的驱动齿轮、与驱动齿轮啮合的齿条，在齿条上设有移动平台，冷却装置固定在移动平台上。\n\n[0015]进一步地，所述传送带采用柔性材料制成。\n\n[0016]本发明与现有技术相比，通过设置加热装置以及冷却装置，中间通过滚筒式传送带，在传送带表面设置温控胶，实现微发光二极管的循环吸附以及转印，提高转印效率。\n\n附图说明\n\n[0017]图1是本发明的结构示意图；\n\n[0018]图2是本发明传送带的结构示意图；\n\n[0019]图3是本发明的加热装置的结构示意图；\n\n[0020]图4是本发明的冷却装置的结构示意图；\n\n[0021]图5是本发明的移动平台与机架之间的连接结构示意图。\n\n具体实施方式\n\n[0022]下面结合附图和实施例对本发明作进一步详细说明。\n\n[0023]如图1所示，本发明的微发光二极管转印装置包括机架6，包括机架6，在机架6的上端设有加热面朝下的加热装置1以及设于加热装置1下方通过传动机构驱动其移动的冷却装置2，所述加热装置1的加热面用于承载具有微发光二极管93的供给衬底91，供给衬底91通过固定件固定于加热面上，此处，固定件为卡扣或螺杆；冷却装置2的冷却面用于承载接收衬底92；所述冷却装置2的冷却面与加热装置1的加热面相对设置，在加热装置1与冷却装置2之间设有滚筒机构3，滚筒机构3固定在机架6上，滚筒机构3上设有可循环转动的传送带4，传送带4由转印膜片构成；在传送带4的外表面上设有温控胶5，温控胶5为预热融化并具有粘性，而遇冷失去粘性的胶体，如低温剥离型的温控秥离胶带，温度在20-60℃之间会失去粘性剥离；在机架6上设有电源8，电源8与滚筒机构3、加热装置1、冷却装置2电连接，从而为微发光二极管93的转印装置供电。\n\n[0024]本发明的工作原理如下：通过传送带4上的温控胶5将被加热的供给衬底91上的微发光二极管93粘附后，滚筒机构3的转动带动传送带4移动至接收衬底92一侧，通过冷却装置对接收衬底92降温，将粘附在传送带4上的微发光二极管93从传送带4上剥离，完成微发光二极管93的转印。\n\n[0025]如图2所示，传送带4的外表面上均匀阵列排布有矩形凸起41，相邻两个矩形凸起41的间距相等，温控胶5覆盖在矩形凸起41上以及矩形凸起41之间的间隙内；相邻两个矩形凸起41之间的间隙宽度与供给衬底91上相邻两个微发光二极管93之间的间隙宽度相同，从而实现微发光二极管93的精确粘附。\n\n[0026]具体地，传送带4为将一片转印膜片弯曲后头尾相接形成一个O字形后套在滚筒机构3上；传送带4由柔性材料制成，满足柔性需求。\n\n[0027]如图1所示，滚筒机构3包括至少一个驱动滚筒31以及至少一个从动滚筒32，驱动滚筒31和从动滚筒32之间可留有间距，从而将传送带4拉紧；还可通过平铺多个驱动滚筒31以及从动滚筒32，形成一条传输道，将传送带4套在两侧最外侧的滚筒上，从而将传送带4拉紧，此种平铺滚筒，可以对传送带4具有一定的承托力，提高转印的效果；本发明中驱动滚筒31与电源8连接。\n\n[0028]在机架6的中部位于滚筒机构3的位置处水平设置有用于固定滚筒机构3的第一支架61，在第一支架61上设有用于连接驱动滚筒31以及从动滚筒32的轴承，驱动滚筒31以及从动滚筒32的两端分别安装在轴承中。\n\n[0029]作为驱动滚筒31的一种较佳实施例，驱动滚筒31采用电动滚筒，其在滚筒本体内集成有驱动电机以及减速器等部件，从动滚筒32则为普通的不具有任何动力驱动的滚筒。\n\n[0030]本发明中传动机构可采用现有技术中的一些常规传送机构，如传送带传动、齿轮传动、齿条传动或丝杆传动，在此给出一种较佳的实现方式，如图1所示，传动机构包括固定在机架6下端的与电源8连接的驱动电机71、设于驱动电机71输出轴上的驱动齿轮72、与驱动齿轮72啮合的齿条73，驱动电机71的输出轴与驱动滚筒31的轴向平行，齿条73与驱动滚筒31的轴向垂直，在齿条73上设有移动平台74，冷却装置2固定在移动平台74上。\n\n[0031]如图5所示，在移动平台74与机架6相对的两侧设有导条75，导条75与齿条73平行；在机架6上设有与齿条73平行的导槽76，导条75设于导槽76中。\n\n[0032]当驱动电机71驱动驱动齿轮72转动时，驱动齿轮72带动齿条73移动，实现通过移动平台74带动冷却装置2以及放置在冷却装置2上的接收衬底92朝滚筒机构3转动方向相反的一侧移，即若滚筒机构3顺时针转动，则驱动电机71逆时针转动。\n\n[0033]本发明中的加热装置可采用现有技术的加热平台，如恒温加热平台；也可以采用如下方式实现，如图3所示，其包括具有加热面的金属板11，在金属板11上设有PTC加热片12，通过电源8对PTC加热片12加电，使PTC加热片12产生热量，通过金属板11传导至供给衬底91上，由于供给衬底91上的微发光二极管93将热量传导至传送带4上的温控胶5上，从而使温控胶5溶解粘附微发光二极管93。\n\n[0034]本发明中冷却装置可采用如图4所示的冷却装置，其包括可装载冷却介质的金属容器21，金属容器21的截面为矩形，在与加热装置相对的一面形成冷却面，金属容器21中装载有冷却介质，金属容器21的内腔通过第一电磁阀22与一灌有冷却介质的储存罐23连通，金属容器21还设有一个排气口25，排气口25上设置有第二电磁阀24，当粘附有微发光二极管93的一侧传送带4旋转至与金属容器21的冷却面相对的一侧时，接收衬底92受冷却面降温，使温度通过微发光二极管93传导到温控胶5上，温控胶5受低温失去粘性，使微发光二极管93从传送带4上剥离，实现转印，第一电磁阀22以及第二电磁阀24均匀电源8连接。\n\n[0035]本发明中，冷却介质为液氮或干冰。\n\n[0036]本发明还可以设置一PLC(可编程逻辑)控制控制加热装置1、冷却装置2、滚筒机构3、传动机构等部件的运作。\n\n[0037]虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。', '技术领域\n\n[0001]本发明涉及一种微发光二极管显示技术领域，特别是一种微发光二极管的转印装置。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED，μLED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，μLED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但μLED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]微转印(Micro Transfer Printing)技术是目前制备μLED显示装置的主流方法，具体制备过程为：首先在蓝宝石类基板生长出微发光二极管，然后通过激光剥离技术(Laser lift-off，LLO)将微发光二极管裸芯片(bare chip)从蓝宝石类基板上分离开，随后使用一个图案化的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)传送头将微发光二极管裸芯片从蓝宝石类基板吸附起来，并将PDMS传送头与接收基板进行对位，随后将PDMS传送头所吸附的微发光二极管裸芯片贴附到接收基板上预设的位置，再剥离PDMS传送头，即可完成将微发光二极管裸芯片转移到接收基板上，进而制得μLED显示装置。\n\n[0005]而目前的转印一般采用通电吸附或PDMS的方式粘附进行转印，当使用PDMS方式进行剥离时存在较难控制剥离效果；当使用通电吸附时则需要对每个吸附头进行导通，不仅复杂而且剥离效果欠佳；目前还有一种通过温度控制来进行微发光二极管转印的技术，其原理是通过低温剥离型胶水，其转印的过程分为吸附-转移-降温最终完成转印，但是往往降温和完成转印的过程速率较慢，且不利于重复进行的高效转印。\n\n发明内容\n\n[0006]为克服现有技术的不足，本发明提供一种微发光二极管的转印装置，从而提高转印的效率。\n\n[0007]本发明提供了一种微发光二极管的转印装置，包括机架，在机架上设有加热面朝下的加热装置以及设于加热装置下方可移动的冷却装置，所述加热装置的加热面用于承载具有微发光二极管的供给衬底，供给衬底通过固定件固定于加热面上，所述冷却装置的冷却面用于承载接收衬底；所述冷却装置的冷却面与加热装置的加热面相对，在加热装置与冷却装置之间设有滚筒机构，滚筒机构固定在机架上，所述滚筒机构上设有可循环转动的传送带，所述传送带由转印膜片构成，在传送带的外表面上设有温控胶，通过传送带上的温控胶将被加热的供给衬底上的微发光二极管粘附后，滚筒机构的转动带动传送带移动至接收衬底一侧，通过冷却装置对接收衬底降温，温控胶失去粘性将粘附在传送带上的微发光二极管剥离，完成微发光二极管的转印，在机架上设有电源，电源与滚筒机构、加热装置、冷却装置电连接。\n\n[0008]进一步地，所述滚筒机构的转动方向与冷却装置的移动方向相反。\n\n[0009]进一步地，所述冷却装置上设有与电源连接的传动机构，传动机构用于驱动冷却装置移动。\n\n[0010]进一步地，所述滚筒机构包括至少一个驱动滚筒以及至少一个从动滚筒，所述传送带套在驱动滚筒与从动滚筒上，驱动滚筒与电源连接。\n\n[0011]进一步地，所述驱动滚筒为电动滚筒。\n\n[0012]进一步地，所述传送带的表面上阵列排布有矩形凸起，相邻两个矩形凸起的间距相等，温控胶覆盖在矩形凸起上以及矩形凸起之间的间隙内。\n\n[0013]进一步地，所述冷却装置的冷却介质为液氮或干冰。\n\n[0014]进一步地，所述传动机构包括固定在机架下端的与电源连接的驱动电机、设于驱动电机输出轴上的驱动齿轮、与驱动齿轮啮合的齿条，在齿条上设有移动平台，冷却装置固定在移动平台上。\n\n[0015]进一步地，所述传送带采用柔性材料制成。\n\n[0016]本发明与现有技术相比，通过设置加热装置以及冷却装置，中间通过滚筒式传送带，在传送带表面设置温控胶，实现微发光二极管的循环吸附以及转印，提高转印效率。\n\n附图说明\n\n[0017]图1是本发明的结构示意图；\n\n[0018]图2是本发明传送带的结构示意图；\n\n[0019]图3是本发明的加热装置的结构示意图；\n\n[0020]图4是本发明的冷却装置的结构示意图；\n\n[0021]图5是本发明的移动平台与机架之间的连接结构示意图。\n\n具体实施方式\n\n[0022]下面结合附图和实施例对本发明作进一步详细说明。\n\n[0023]如图1所示，本发明的微发光二极管转印装置包括机架6，包括机架6，在机架6的上端设有加热面朝下的加热装置1以及设于加热装置1下方通过传动机构驱动其移动的冷却装置2，所述加热装置1的加热面用于承载具有微发光二极管93的供给衬底91，供给衬底91通过固定件固定于加热面上，此处，固定件为卡扣或螺杆；冷却装置2的冷却面用于承载接收衬底92；所述冷却装置2的冷却面与加热装置1的加热面相对设置，在加热装置1与冷却装置2之间设有滚筒机构3，滚筒机构3固定在机架6上，滚筒机构3上设有可循环转动的传送带4，传送带4由转印膜片构成；在传送带4的外表面上设有温控胶5，温控胶5为预热融化并具有粘性，而遇冷失去粘性的胶体，如低温剥离型的温控秥离胶带，温度在20-60℃之间会失去粘性剥离；在机架6上设有电源8，电源8与滚筒机构3、加热装置1、冷却装置2电连接，从而为微发光二极管93的转印装置供电。\n\n[0024]本发明的工作原理如下：通过传送带4上的温控胶5将被加热的供给衬底91上的微发光二极管93粘附后，滚筒机构3的转动带动传送带4移动至接收衬底92一侧，通过冷却装置对接收衬底92降温，将粘附在传送带4上的微发光二极管93从传送带4上剥离，完成微发光二极管93的转印。\n\n[0025]如图2所示，传送带4的外表面上均匀阵列排布有矩形凸起41，相邻两个矩形凸起41的间距相等，温控胶5覆盖在矩形凸起41上以及矩形凸起41之间的间隙内；相邻两个矩形凸起41之间的间隙宽度与供给衬底91上相邻两个微发光二极管93之间的间隙宽度相同，从而实现微发光二极管93的精确粘附。\n\n[0026]具体地，传送带4为将一片转印膜片弯曲后头尾相接形成一个O字形后套在滚筒机构3上；传送带4由柔性材料制成，满足柔性需求。\n\n[0027]如图1所示，滚筒机构3包括至少一个驱动滚筒31以及至少一个从动滚筒32，驱动滚筒31和从动滚筒32之间可留有间距，从而将传送带4拉紧；还可通过平铺多个驱动滚筒31以及从动滚筒32，形成一条传输道，将传送带4套在两侧最外侧的滚筒上，从而将传送带4拉紧，此种平铺滚筒，可以对传送带4具有一定的承托力，提高转印的效果；本发明中驱动滚筒31与电源8连接。\n\n[0028]在机架6的中部位于滚筒机构3的位置处水平设置有用于固定滚筒机构3的第一支架61，在第一支架61上设有用于连接驱动滚筒31以及从动滚筒32的轴承，驱动滚筒31以及从动滚筒32的两端分别安装在轴承中。\n\n[0029]作为驱动滚筒31的一种较佳实施例，驱动滚筒31采用电动滚筒，其在滚筒本体内集成有驱动电机以及减速器等部件，从动滚筒32则为普通的不具有任何动力驱动的滚筒。\n\n[0030]本发明中传动机构可采用现有技术中的一些常规传送机构，如传送带传动、齿轮传动、齿条传动或丝杆传动，在此给出一种较佳的实现方式，如图1所示，传动机构包括固定在机架6下端的与电源8连接的驱动电机71、设于驱动电机71输出轴上的驱动齿轮72、与驱动齿轮72啮合的齿条73，驱动电机71的输出轴与驱动滚筒31的轴向平行，齿条73与驱动滚筒31的轴向垂直，在齿条73上设有移动平台74，冷却装置2固定在移动平台74上。\n\n[0031]如图5所示，在移动平台74与机架6相对的两侧设有导条75，导条75与齿条73平行；在机架6上设有与齿条73平行的导槽76，导条75设于导槽76中。\n\n[0032]当驱动电机71驱动驱动齿轮72转动时，驱动齿轮72带动齿条73移动，实现通过移动平台74带动冷却装置2以及放置在冷却装置2上的接收衬底92朝滚筒机构3转动方向相反的一侧移，即若滚筒机构3顺时针转动，则驱动电机71逆时针转动。\n\n[0033]本发明中的加热装置可采用现有技术的加热平台，如恒温加热平台；也可以采用如下方式实现，如图3所示，其包括具有加热面的金属板11，在金属板11上设有PTC加热片12，通过电源8对PTC加热片12加电，使PTC加热片12产生热量，通过金属板11传导至供给衬底91上，由于供给衬底91上的微发光二极管93将热量传导至传送带4上的温控胶5上，从而使温控胶5溶解粘附微发光二极管93。\n\n[0034]本发明中冷却装置可采用如图4所示的冷却装置，其包括可装载冷却介质的金属容器21，金属容器21的截面为矩形，在与加热装置相对的一面形成冷却面，金属容器21中装载有冷却介质，金属容器21的内腔通过第一电磁阀22与一灌有冷却介质的储存罐23连通，金属容器21还设有一个排气口25，排气口25上设置有第二电磁阀24，当粘附有微发光二极管93的一侧传送带4旋转至与金属容器21的冷却面相对的一侧时，接收衬底92受冷却面降温，使温度通过微发光二极管93传导到温控胶5上，温控胶5受低温失去粘性，使微发光二极管93从传送带4上剥离，实现转印，第一电磁阀22以及第二电磁阀24均匀电源8连接。\n\n[0035]本发明中，冷却介质为液氮或干冰。\n\n[0036]本发明还可以设置一PLC(可编程逻辑)控制控制加热装置1、冷却装置2、滚筒机构3、传动机构等部件的运作。\n\n[0037]虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。');
INSERT INTO `os_patent_instruction_text` VALUES (10586, 23640, '技术领域\n\n[0001]本发明涉及一种显示技术领域，特别是一种微发光二极管显示面板及制作方法。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED，μLED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，μLED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但μLED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]微转印(Micro Transfer Printing)技术是目前制备μLED显示装置的主流方法，具体制备过程为：首先在蓝宝石类基板生长出微发光二极管，然后通过激光剥离技术(Laser lift-off，LLO)将微发光二极管裸芯片(bare chip)从蓝宝石类基板上分离开，随后使用一个图案化的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)传送头将微发光二极管裸芯片从蓝宝石类基板吸附起来，并将PDMS传送头与接收基板进行对位，随后将PDMS传送头所吸附的微发光二极管裸芯片贴附到接收基板上预设的位置，再剥离PDMS传送头，即可完成将微发光二极管裸芯片转移到接收基板上，进而制得μLED显示装置。\n\n[0005]目前液晶显示面板等平板显示面板中的子像素的尺寸相对于微发光二极管的尺寸而言都是比较大的，若在相当于现有的子像素区域大小的面积空间对应填充一个小尺寸的微发光二极管，则需要多块具有微发光二极晶粒的转印板进行阵列排布从而形成子像素区，现有的一个关键问题在于，对于R/G/BμLED chip(微发光二极管晶粒),在生产过程中存在一致性偏离的问题，即通常LED的生产，有一个分Bin(Bin Code档次范围)级的过程，即根据微发光二极管晶粒的光电特性将微发光二极管晶粒进行分类，每一类叫做一个Bin级，一般情况下，分Bin级时会先对于同一批次中的微发光二极管的峰值波长订立一个固定值，然后将围绕该固定值±2nm的微发光二极管作为一个Bin级，在该范围值内的微发光二极管晶粒的色度和亮度的一致性较好，而在不同的Bin级中，峰值波长会发生大范围的移动，色度和亮度会存在一致性偏离的问题。\n\n[0006]若采用Micro LED作为光源，制备Micro LED彩色显示器，则需要大规模生产R/G/BLED chip，这个过程中LED chip的一致性偏离是一个必然现象。不同硅晶片(Wafer)生长出的LED chip很大概率处于不同的Bin级中，若直接将不同Bin级中的微发光二极管直接一次转印至阵列基板上，会导致了微发光二极管显示面器颜色和亮度的均匀性差。\n\n发明内容\n\n[0007]为克服现有技术的不足，本发明提供一种微发光二极管显示面板及制作方法，有效改善整个微发光二极管显示面板的颜色和亮度的匀称性。\n\n[0008]本发明提供了一种微发光二极管显示面板，包括阵列基板，所述阵列基板上阵列排布有多个像素单元，每个像素单元至少包括R、G、B三色的子像素单元，每个子像素单元中均设有至少一个与该子像素单元颜色相对应的微发光二极管晶粒，相邻两个像素单元中颜色相同的子像素单元的微发光二极管晶粒的Bin级不同且峰值波长差值>2nm，从而将不同Bin级的微发光二极管晶粒混合排布。\n\n[0009]进一步地，每个子像素单元至少由两个颜色相同、Bin级不同且峰值波长差值>2nm的微发光二极管晶粒混合排布而成。\n\n[0010]进一步地，所述阵列基板上划分有n个排布区，每个排布区中R、G、B子像素单元分别采用对应颜色的m种Bin级的微发光二极管晶粒混合排布，其中，2[0011]进一步地，每个排布区中每种Bin级的微发光二极管晶粒的个数为m/n个。\n\n[0012]进一步地，每个排布区中相邻两个颜色相同的微发光二极管晶粒的峰值波长差值>2nm。\n\n[0013]本发明还提供了一种微发光二极管显示面板的制作方法，包括如下步骤：\n\n[0014]提供一阵列基板；\n\n[0015]在阵列基板的像素单元中的R、G、B三色的子像素单元内通过转印将对应颜色的微发光二极管晶粒从转印板上转印至相应的子像素单元中，每次转印的微发光二极管晶粒的颜色以及Bin级相同，相邻两个像素单元中颜色相同的子像素单元内的微发光二极管晶粒的Bin级不同且峰值波长差值>2nm。\n\n[0016]进一步地，每个子像素单元至少通过两次转印，将两个颜色相同、Bin级不同且峰值波长差值>2nm的微发光二极管晶粒混合排布在相应的子像素单元中。\n\n[0017]进一步地，在转印前，将阵列基板划分为n个排布区，每个排布区中R、G、B子像素单元分别采用对应颜色的m种Bin级的微发光二极管晶粒混合排布，每一次转印将一块Bin级相同的转印板上的多个微发光二极管晶粒分别排布至每一个排布区中对应的子像素单元内，直到将每个排布区布满微发光二极管晶粒；其中，2[0018]进一步地，每个排布区中每种Bin级的微发光二极管晶粒的个数为m/n个。\n\n[0019]进一步地，每个排布区中相邻两个颜色相同的微发光二极管晶粒的峰值波长差值>2nm。\n\n[0020]本发明与现有技术相比，通过在每个子像素单元中阵列排布有颜色相同且Bin级不同的微发光二极管晶粒，从而使不同色温、不同批次生产的同一颜色的微微发光二极管晶粒混合阵列排布在一起，通过多次转印，实现混合阵列排布，将不同Bin级的同一颜色的微微发光二极管晶粒分散在整个阵列基板中，能够有效改善微发光二极管显示面板的颜色和亮度的均称性。\n\n附图说明\n\n[0021]图1是本发明的排布方式的示意图；\n\n[0022]图2是本发明的第一种排布方式的示意图；\n\n[0023]图3是本发明的第二种排布方式的示意图。\n\n具体实施方式\n\n[0024]下面结合附图和实施例对本发明作进一步详细说明。\n\n[0025]本发明中分Bin级是微发光二极管生产企业中的一个常规做法，因为在一次微发光二极管生产中会出现同一批次或者是同一块衬底上形成的微发光二极管的光电特性都会存在差异，因此需要通过不同的光电特性将微放光二极管进行分类，每一类代表一个Bin(Bin Code档次范围)级，这里的档次范围指的不是质量高低档次，是指根据色度和亮度来分类，比如红色的颜色波长一般是620-625NM一个档或625-630NM一个档亮度350-450MCD一个档、450-580MCD一个档这个档就是Bin Code。\n\n[0026]本发明中采用的是以微发光二极管的峰值波长作为主要参数进行分类。\n\n[0027]如图1所示，本发明的微发光二极管显示面板包括阵列基板1，所述阵列基板1上阵列排布有多个像素单元，每个像素单元至少包括R、G、B三色的子像素单元4，每个子像素单元4中均设有至少一个与该子像素单元4颜色相对应的微发光二极管晶粒2，相邻两个像素单元中颜色相同的子像素单元4的微发光二极管晶粒2来自不同的Bin级且相邻两个颜色相同的微发光二极管晶粒2的峰值波长差值>2nm。\n\n[0028]由于常规的微发光二极管显示面板中微发光二极管晶粒2的排布方式是通过将一块转印板上的微发光二极管晶粒2整体转印到阵列基板1上，然后将其采用常规的连接方式与阵列基板1上的像素电极进行电连接，实现导通，而两块转印板上的微发光二极管晶粒2由于会存Bin级不同，存在差异性，通过计算发现，对于相邻的3-4个不同色温的微发光二极管晶粒，其色度差异性大，当峰值波长平移2nm，色度差异就超过了0.01，而一个色温的峰值波长范围往往由2.5nm。导致在将整块转印板上的微发光二极管晶粒2转印后，会导致局部颜色亮度不均匀的现象，因此，通过将相同颜色，Bin级不同且相邻两个颜色相同的微发光二极管晶粒2的峰值波长差值>2nm的微发光二极管晶粒2进行混合排布，使不同Bin级以及峰值波长差值>2nm的微发光二极管晶粒2分散在整块阵列基板1中，这样能够解决颜色亮度不均匀的问题。\n\n[0029]如图2所示，微发光二极管晶粒2的第一种排布方式如下，本发明的微发光二极管显示面板包括阵列基板1，所述阵列基板1上阵列排布有多个像素单元，每个像素单元至少包括R、G、B三色的子像素单元4，每个子像素单元4中均设有至少一个与该子像素单元4颜色相对应的微发光二极管晶粒2，相邻两个像素单元中颜色相同的子像素单元4的微发光二极管晶粒2的Bin级不同且峰值波长差值>2nm；具体地，每个子像素单元4至少由两个颜色相同、Bin级不同且相邻两个微发光二极管晶粒2的峰值波长差值>2nm的微发光二极管晶粒2混合排布而成。\n\n[0030]以下以G子像素单元为例，进行说明，由于微发光二极管晶粒2的整板尺寸较小，当转印至阵列基板1上时，阵列基板1的尺寸有些会大于转印板的尺寸，而且微发光二极管晶粒2自身的尺寸也较小，因此需要多块不同Bin级的转印板进行转印，转印时，每个G子像素单元由至少两个颜色相同但是Bin级不同且峰值波长差值>2nm的微发光二极管晶粒2混合排布而成，例如，如图2所示，每个G子像素单元由两个颜色相同但是Bin级不同且相邻两个微发光二极管晶粒2的峰值波长差值>2nm的微发光二极管晶粒2混合排布而成。\n\n[0031]如图3所示，为微发光二极管晶粒2的另一种排布方式，图中仅显示出G子像素单元4中的微发光二极管晶粒2的排布方式，这种排布方式较第一种排布方式，不管从转印或颜色亮度上均较优，在阵列基板1上划分有n个排布区3，每个排布区3中R、G、B子像素单元4分别采用对应颜色的m种Bin级不同且相邻两个颜色相同的微发光二极管晶粒2的峰值波长差值>2nm的微发光二极管晶粒2混合排布，其中，2[0032]在本排布方式中，每个排布区3中每种Bin级的微发光二极管晶粒2的个数为m/n个。\n\n[0033]所述每个排布区3中相邻两个颜色相同的微发光二极管晶粒2的Bin级不同且峰值波长差值>2nm。\n\n[0034]本发明的微发光二极管显示面板的制作方法如下：\n\n[0035]如图1所示，提供一阵列基板1；\n\n[0036]在阵列基板1的像素单元中的R、G、B三色的子像素单元4内通过转印将对应颜色的微发光二极管晶粒2从转印板上转印至相应的子像素单元4中，每次转印的微发光二极管晶粒2的颜色相同以及Bin级相同，相邻两个像素单元中颜色相同的子像素单元4内的微发光二极管晶粒2的Bin级不同且峰值波长差值>2nm。\n\n[0037]如图2所示，本发明的第一种排布方式的制作方法具体为，每个子像素单元4至少通过两次转印，将两个颜色相同、Bin级不同且峰值波长差值>2nm的微发光二极管晶粒2混合排布在相应的一个子像素单元4中。\n\n[0038]如图3所示，本发明的另一种排布方式的微发光二极管显示面板的制作方法具体为，在转印前，将阵列基板1划分为n个排布区3，每个排布区3中R、G、B子像素单元4分别采用对应颜色的m种Bin级不同的微发光二极管晶粒2混合排布，每一次转印将一块Bin级相同的转印板上的多个微发光二极管晶粒2分别排布至每一个排布区3中对应的子像素单元4内，直到将每个排布区布满微发光二极管晶粒2；其中，2[0039]具体地，每个排布区3中相邻两个颜色相同的微发光二极管晶粒2的Bin级不同且峰值波长差值。\n\n[0040]在现有的制作方法中，在一次转印后会将一块Bin级相同的转印板上携带的所有微发光二极管晶粒2都转移到阵列基板对应的子像素单元中，同一次转印的所有微发光二极管晶粒2都密集排布在一起。而在本发明，每次转印仅从一块Bin级相同的转印板上抓取部分微发光二极管晶粒2，将一块Bin级相同的转印板在阵列基板1上进行多次转印，也就是在阵列基板的不同位置都用同一块Bin级相同的转印板进行转印微发光二极管晶粒2，而不是一次将所有微发光二极管晶粒2转移完。\n\n[0041]在上述过程中，原本一次转印的所有具有相同颜色、Bin级相同的微发光二极管晶粒2排布是相邻的，而采用一个Bin级的转印板多次转印意味着在显示器阵列基板1上存在多个分散的微发光二极管晶粒组，这种从同一Bin级的转印板上多次转印一致性较好、峰值波长差值较小的微发光二极管晶粒2，再将它们分散排布放置在阵列基板上的方法，可以有效改善整个微发光二极管显示面板的颜色和亮度的均匀性。\n\n[0042]本发明的转印可采用静电力控制的转印模板,仅对需要放下的LED进行静电力的解除；另一种是非静电力控制的转印模板，通过对阵列基板的局部加热，来控制仅加热融化对应区域的位置LED被转移到阵列基板上。\n\n[0043]虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。', '技术领域\n\n[0001]本发明涉及一种显示技术领域，特别是一种微发光二极管显示面板及制作方法。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED，μLED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，μLED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但μLED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]微转印(Micro Transfer Printing)技术是目前制备μLED显示装置的主流方法，具体制备过程为：首先在蓝宝石类基板生长出微发光二极管，然后通过激光剥离技术(Laser lift-off，LLO)将微发光二极管裸芯片(bare chip)从蓝宝石类基板上分离开，随后使用一个图案化的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)传送头将微发光二极管裸芯片从蓝宝石类基板吸附起来，并将PDMS传送头与接收基板进行对位，随后将PDMS传送头所吸附的微发光二极管裸芯片贴附到接收基板上预设的位置，再剥离PDMS传送头，即可完成将微发光二极管裸芯片转移到接收基板上，进而制得μLED显示装置。\n\n[0005]目前液晶显示面板等平板显示面板中的子像素的尺寸相对于微发光二极管的尺寸而言都是比较大的，若在相当于现有的子像素区域大小的面积空间对应填充一个小尺寸的微发光二极管，则需要多块具有微发光二极晶粒的转印板进行阵列排布从而形成子像素区，现有的一个关键问题在于，对于R/G/BμLED chip(微发光二极管晶粒),在生产过程中存在一致性偏离的问题，即通常LED的生产，有一个分Bin(Bin Code档次范围)级的过程，即根据微发光二极管晶粒的光电特性将微发光二极管晶粒进行分类，每一类叫做一个Bin级，一般情况下，分Bin级时会先对于同一批次中的微发光二极管的峰值波长订立一个固定值，然后将围绕该固定值±2nm的微发光二极管作为一个Bin级，在该范围值内的微发光二极管晶粒的色度和亮度的一致性较好，而在不同的Bin级中，峰值波长会发生大范围的移动，色度和亮度会存在一致性偏离的问题。\n\n[0006]若采用Micro LED作为光源，制备Micro LED彩色显示器，则需要大规模生产R/G/BLED chip，这个过程中LED chip的一致性偏离是一个必然现象。不同硅晶片(Wafer)生长出的LED chip很大概率处于不同的Bin级中，若直接将不同Bin级中的微发光二极管直接一次转印至阵列基板上，会导致了微发光二极管显示面器颜色和亮度的均匀性差。\n\n发明内容\n\n[0007]为克服现有技术的不足，本发明提供一种微发光二极管显示面板及制作方法，有效改善整个微发光二极管显示面板的颜色和亮度的匀称性。\n\n[0008]本发明提供了一种微发光二极管显示面板，包括阵列基板，所述阵列基板上阵列排布有多个像素单元，每个像素单元至少包括R、G、B三色的子像素单元，每个子像素单元中均设有至少一个与该子像素单元颜色相对应的微发光二极管晶粒，相邻两个像素单元中颜色相同的子像素单元的微发光二极管晶粒的Bin级不同且峰值波长差值>2nm，从而将不同Bin级的微发光二极管晶粒混合排布。\n\n[0009]进一步地，每个子像素单元至少由两个颜色相同、Bin级不同且峰值波长差值>2nm的微发光二极管晶粒混合排布而成。\n\n[0010]进一步地，所述阵列基板上划分有n个排布区，每个排布区中R、G、B子像素单元分别采用对应颜色的m种Bin级的微发光二极管晶粒混合排布，其中，2[0011]进一步地，每个排布区中每种Bin级的微发光二极管晶粒的个数为m/n个。\n\n[0012]进一步地，每个排布区中相邻两个颜色相同的微发光二极管晶粒的峰值波长差值>2nm。\n\n[0013]本发明还提供了一种微发光二极管显示面板的制作方法，包括如下步骤：\n\n[0014]提供一阵列基板；\n\n[0015]在阵列基板的像素单元中的R、G、B三色的子像素单元内通过转印将对应颜色的微发光二极管晶粒从转印板上转印至相应的子像素单元中，每次转印的微发光二极管晶粒的颜色以及Bin级相同，相邻两个像素单元中颜色相同的子像素单元内的微发光二极管晶粒的Bin级不同且峰值波长差值>2nm。\n\n[0016]进一步地，每个子像素单元至少通过两次转印，将两个颜色相同、Bin级不同且峰值波长差值>2nm的微发光二极管晶粒混合排布在相应的子像素单元中。\n\n[0017]进一步地，在转印前，将阵列基板划分为n个排布区，每个排布区中R、G、B子像素单元分别采用对应颜色的m种Bin级的微发光二极管晶粒混合排布，每一次转印将一块Bin级相同的转印板上的多个微发光二极管晶粒分别排布至每一个排布区中对应的子像素单元内，直到将每个排布区布满微发光二极管晶粒；其中，2[0018]进一步地，每个排布区中每种Bin级的微发光二极管晶粒的个数为m/n个。\n\n[0019]进一步地，每个排布区中相邻两个颜色相同的微发光二极管晶粒的峰值波长差值>2nm。\n\n[0020]本发明与现有技术相比，通过在每个子像素单元中阵列排布有颜色相同且Bin级不同的微发光二极管晶粒，从而使不同色温、不同批次生产的同一颜色的微微发光二极管晶粒混合阵列排布在一起，通过多次转印，实现混合阵列排布，将不同Bin级的同一颜色的微微发光二极管晶粒分散在整个阵列基板中，能够有效改善微发光二极管显示面板的颜色和亮度的均称性。\n\n附图说明\n\n[0021]图1是本发明的排布方式的示意图；\n\n[0022]图2是本发明的第一种排布方式的示意图；\n\n[0023]图3是本发明的第二种排布方式的示意图。\n\n具体实施方式\n\n[0024]下面结合附图和实施例对本发明作进一步详细说明。\n\n[0025]本发明中分Bin级是微发光二极管生产企业中的一个常规做法，因为在一次微发光二极管生产中会出现同一批次或者是同一块衬底上形成的微发光二极管的光电特性都会存在差异，因此需要通过不同的光电特性将微放光二极管进行分类，每一类代表一个Bin(Bin Code档次范围)级，这里的档次范围指的不是质量高低档次，是指根据色度和亮度来分类，比如红色的颜色波长一般是620-625NM一个档或625-630NM一个档亮度350-450MCD一个档、450-580MCD一个档这个档就是Bin Code。\n\n[0026]本发明中采用的是以微发光二极管的峰值波长作为主要参数进行分类。\n\n[0027]如图1所示，本发明的微发光二极管显示面板包括阵列基板1，所述阵列基板1上阵列排布有多个像素单元，每个像素单元至少包括R、G、B三色的子像素单元4，每个子像素单元4中均设有至少一个与该子像素单元4颜色相对应的微发光二极管晶粒2，相邻两个像素单元中颜色相同的子像素单元4的微发光二极管晶粒2来自不同的Bin级且相邻两个颜色相同的微发光二极管晶粒2的峰值波长差值>2nm。\n\n[0028]由于常规的微发光二极管显示面板中微发光二极管晶粒2的排布方式是通过将一块转印板上的微发光二极管晶粒2整体转印到阵列基板1上，然后将其采用常规的连接方式与阵列基板1上的像素电极进行电连接，实现导通，而两块转印板上的微发光二极管晶粒2由于会存Bin级不同，存在差异性，通过计算发现，对于相邻的3-4个不同色温的微发光二极管晶粒，其色度差异性大，当峰值波长平移2nm，色度差异就超过了0.01，而一个色温的峰值波长范围往往由2.5nm。导致在将整块转印板上的微发光二极管晶粒2转印后，会导致局部颜色亮度不均匀的现象，因此，通过将相同颜色，Bin级不同且相邻两个颜色相同的微发光二极管晶粒2的峰值波长差值>2nm的微发光二极管晶粒2进行混合排布，使不同Bin级以及峰值波长差值>2nm的微发光二极管晶粒2分散在整块阵列基板1中，这样能够解决颜色亮度不均匀的问题。\n\n[0029]如图2所示，微发光二极管晶粒2的第一种排布方式如下，本发明的微发光二极管显示面板包括阵列基板1，所述阵列基板1上阵列排布有多个像素单元，每个像素单元至少包括R、G、B三色的子像素单元4，每个子像素单元4中均设有至少一个与该子像素单元4颜色相对应的微发光二极管晶粒2，相邻两个像素单元中颜色相同的子像素单元4的微发光二极管晶粒2的Bin级不同且峰值波长差值>2nm；具体地，每个子像素单元4至少由两个颜色相同、Bin级不同且相邻两个微发光二极管晶粒2的峰值波长差值>2nm的微发光二极管晶粒2混合排布而成。\n\n[0030]以下以G子像素单元为例，进行说明，由于微发光二极管晶粒2的整板尺寸较小，当转印至阵列基板1上时，阵列基板1的尺寸有些会大于转印板的尺寸，而且微发光二极管晶粒2自身的尺寸也较小，因此需要多块不同Bin级的转印板进行转印，转印时，每个G子像素单元由至少两个颜色相同但是Bin级不同且峰值波长差值>2nm的微发光二极管晶粒2混合排布而成，例如，如图2所示，每个G子像素单元由两个颜色相同但是Bin级不同且相邻两个微发光二极管晶粒2的峰值波长差值>2nm的微发光二极管晶粒2混合排布而成。\n\n[0031]如图3所示，为微发光二极管晶粒2的另一种排布方式，图中仅显示出G子像素单元4中的微发光二极管晶粒2的排布方式，这种排布方式较第一种排布方式，不管从转印或颜色亮度上均较优，在阵列基板1上划分有n个排布区3，每个排布区3中R、G、B子像素单元4分别采用对应颜色的m种Bin级不同且相邻两个颜色相同的微发光二极管晶粒2的峰值波长差值>2nm的微发光二极管晶粒2混合排布，其中，2[0032]在本排布方式中，每个排布区3中每种Bin级的微发光二极管晶粒2的个数为m/n个。\n\n[0033]所述每个排布区3中相邻两个颜色相同的微发光二极管晶粒2的Bin级不同且峰值波长差值>2nm。\n\n[0034]本发明的微发光二极管显示面板的制作方法如下：\n\n[0035]如图1所示，提供一阵列基板1；\n\n[0036]在阵列基板1的像素单元中的R、G、B三色的子像素单元4内通过转印将对应颜色的微发光二极管晶粒2从转印板上转印至相应的子像素单元4中，每次转印的微发光二极管晶粒2的颜色相同以及Bin级相同，相邻两个像素单元中颜色相同的子像素单元4内的微发光二极管晶粒2的Bin级不同且峰值波长差值>2nm。\n\n[0037]如图2所示，本发明的第一种排布方式的制作方法具体为，每个子像素单元4至少通过两次转印，将两个颜色相同、Bin级不同且峰值波长差值>2nm的微发光二极管晶粒2混合排布在相应的一个子像素单元4中。\n\n[0038]如图3所示，本发明的另一种排布方式的微发光二极管显示面板的制作方法具体为，在转印前，将阵列基板1划分为n个排布区3，每个排布区3中R、G、B子像素单元4分别采用对应颜色的m种Bin级不同的微发光二极管晶粒2混合排布，每一次转印将一块Bin级相同的转印板上的多个微发光二极管晶粒2分别排布至每一个排布区3中对应的子像素单元4内，直到将每个排布区布满微发光二极管晶粒2；其中，2[0039]具体地，每个排布区3中相邻两个颜色相同的微发光二极管晶粒2的Bin级不同且峰值波长差值。\n\n[0040]在现有的制作方法中，在一次转印后会将一块Bin级相同的转印板上携带的所有微发光二极管晶粒2都转移到阵列基板对应的子像素单元中，同一次转印的所有微发光二极管晶粒2都密集排布在一起。而在本发明，每次转印仅从一块Bin级相同的转印板上抓取部分微发光二极管晶粒2，将一块Bin级相同的转印板在阵列基板1上进行多次转印，也就是在阵列基板的不同位置都用同一块Bin级相同的转印板进行转印微发光二极管晶粒2，而不是一次将所有微发光二极管晶粒2转移完。\n\n[0041]在上述过程中，原本一次转印的所有具有相同颜色、Bin级相同的微发光二极管晶粒2排布是相邻的，而采用一个Bin级的转印板多次转印意味着在显示器阵列基板1上存在多个分散的微发光二极管晶粒组，这种从同一Bin级的转印板上多次转印一致性较好、峰值波长差值较小的微发光二极管晶粒2，再将它们分散排布放置在阵列基板上的方法，可以有效改善整个微发光二极管显示面板的颜色和亮度的均匀性。\n\n[0042]本发明的转印可采用静电力控制的转印模板,仅对需要放下的LED进行静电力的解除；另一种是非静电力控制的转印模板，通过对阵列基板的局部加热，来控制仅加热融化对应区域的位置LED被转移到阵列基板上。\n\n[0043]虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。');
INSERT INTO `os_patent_instruction_text` VALUES (10587, 23641, '技术领域\n\n[0001]本发明涉及一种微发光二极管显示技术领域，特别是一种微发光二极管阵列基板及显示面板。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED，μLED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，μLED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但μLED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]目前微发光二极管显示阵列示设计在驱动阵列上方的微发光二极管阵列结构，通过正负电极欲驱动阵列的导通连接，以TFT阵列控制每个像素的微发光二极管的开关和亮度，通过TFT驱动显示单元已经成为主流的电流控制技术，这种薄膜晶体管通过栅极控制，在源极/漏极之间形成电流沟道，从而使子像素存储电容被充电来保持液晶的持续式(Holdtype)显示模式；而微发光二极管阵列由于其微米尺度，当为了达到高像素数目(PPI)显示时，会导致微发光二极管的密度极高，使得其存在散热不通畅的问题。\n\n发明内容\n\n[0005]为克服现有技术的不足，本发明提供一种微发光二极管阵列基板及显示面板，从而提高散热能力。\n\n[0006]本发明提供了一种微发光二极管阵列基板，包括玻璃基板，所述玻璃基板上依次形成有栅极、绝缘层，在绝缘层上形成有半导体层以及像素电极，在半导体层上设有源极、漏极，所述漏极与相邻的像素电极连接，在像素电极上覆盖有一层第一导电层，第一导电层上连接有微发光二极管。\n\n[0007]进一步地，所述第一导电层由石墨烯材料制成。\n\n[0008]进一步地，所述第一导电层由碳纳米管材料制成。\n\n[0009]进一步地，所述微发光二极管的管脚处与第一导电层之间设有金属凸起部，微发光二极管的管脚经金属凸起部与第一导电层连接导通。\n\n[0010]进一步地，所述金属凸起部的截面形状为梯形。\n\n[0011]进一步地，所述金属凸起部外覆盖有石墨烯层。\n\n[0012]进一步地，所述源极以及漏极上覆盖有一层第二导电层，第二导电层与设置在漏极相邻的像素电极上的这部分第一导电层连接。\n\n[0013]进一步地，所述第二导电层由石墨烯材料制成。\n\n[0014]进一步地，所述第一导电层通过等离子体增强气相沉积制程将石墨烯覆盖在像素电极上并且与像素电极的图形重叠形成石墨烯膜得到。\n\n[0015]本发明还提供了一种显示面板，包括CF基板，还包括所述的微发光二极管阵列基板。\n\n[0016]本发明与现有技术相比，通过在像素电极与微发光二极管之间覆盖一层导电层，使得微发光二极管处的热量能够经导电层传导至其他区域，从而提高散热能力。\n\n附图说明\n\n[0017]图1是本发明的第一种微发光二极管阵列基板的结构示意图；\n\n[0018]图2是本发明的第二种微发光二极管阵列基板的结构示意图。\n\n具体实施方式\n\n[0019]下面结合附图和实施例对本发明作进一步详细说明。\n\n[0020]如图1所示，本发明的第一种微发光二极管阵列基板，包括玻璃基板1，在玻璃基板1上采用现有技术依次形成有栅极2、绝缘层3，在绝缘层3上形成有半导体层4以及像素电极5，在半导体层4上设有源极6、漏极7，所述漏极7与相邻的像素电极5连接，在像素电极5上覆盖有一层第一导电层8，第一导电层8上连接有微发光二极管9；在微发光二极管9的管脚处与第一导电层8之间设有金属凸起部10，微发光二极管9的管脚经金属凸起部10与第一导电层8连接导通。\n\n[0021]在第一种微发光二极管阵列基板中，第一导电层8可由石墨烯材料或碳纳米管(CNT)制成，最好为石墨烯材料，石墨烯不仅具有较好的导电能力，同时具有优秀的导热能力，可以有效地讲较大密度排布的微发光二极管9和较大电流密度下的局部区域热能传递到周边温度较低区域，这样能够提高整个显示面板的散热能力。\n\n[0022]所述第一导电层8通过等离子体增强气相沉积制程将石墨烯覆盖在像素电极5上并且与像素电极5的图形重叠形成石墨烯膜得到。\n\n[0023]在金属凸起部10外可覆盖有石墨烯层12；金属凸起部10的截面形状为梯形。\n\n[0024]如图2所示，在第一种微发光二极管阵列基板的基础上，在源极6以及漏极7上也覆盖有一层第二导电层11，第二导电层11与设置在漏极7相邻的像素电极5上的这部分第一导电层8连接；第二导电层11由石墨烯材料制成，通过在源极6、漏极7以及像素电极5上都覆盖导电层，进一步提高散热能力。\n\n[0025]本发明在源极6、漏极7以及像素电极5上覆盖导电层可以提高散热能力外，还可以保护源极6、漏极7以及像素电极5不受到环境腐蚀以及氧化问题，从而保障器件性能。\n\n[0026]本发明中除了对微发光二极管阵列基板设置导电层外，其余部分均与现有技术的TFT器件相同，其中的源极6、漏极7、像素电极5、栅极2可采用Al/Mo/Cu/Mg/Ag/Ti中的一种以上，像素电极5还可以采用ITO(铟锡氧化物半导体导电膜)和Sn及Sn的合金材料；半导体层4可以为非晶硅或多晶硅，其与形成源极6和漏极7的金属层可以叠加n+/p+掺杂层。\n\n[0027]上述的两种微发光二极管阵列基板的结构还可以用于顶栅结构的TFT器件中，同样通过漏极与像素电极相连，从而控制通过微发光二极管的电流。\n\n[0028]本发明还提供了一种显示面板，包括CF(彩色滤光片)基板，还包括上述的微发光二极管阵列基板，在此不再赘述。\n\n[0029]虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。', '技术领域\n\n[0001]本发明涉及一种微发光二极管显示技术领域，特别是一种微发光二极管阵列基板及显示面板。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED，μLED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，μLED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但μLED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]目前微发光二极管显示阵列示设计在驱动阵列上方的微发光二极管阵列结构，通过正负电极欲驱动阵列的导通连接，以TFT阵列控制每个像素的微发光二极管的开关和亮度，通过TFT驱动显示单元已经成为主流的电流控制技术，这种薄膜晶体管通过栅极控制，在源极/漏极之间形成电流沟道，从而使子像素存储电容被充电来保持液晶的持续式(Holdtype)显示模式；而微发光二极管阵列由于其微米尺度，当为了达到高像素数目(PPI)显示时，会导致微发光二极管的密度极高，使得其存在散热不通畅的问题。\n\n发明内容\n\n[0005]为克服现有技术的不足，本发明提供一种微发光二极管阵列基板及显示面板，从而提高散热能力。\n\n[0006]本发明提供了一种微发光二极管阵列基板，包括玻璃基板，所述玻璃基板上依次形成有栅极、绝缘层，在绝缘层上形成有半导体层以及像素电极，在半导体层上设有源极、漏极，所述漏极与相邻的像素电极连接，在像素电极上覆盖有一层第一导电层，第一导电层上连接有微发光二极管。\n\n[0007]进一步地，所述第一导电层由石墨烯材料制成。\n\n[0008]进一步地，所述第一导电层由碳纳米管材料制成。\n\n[0009]进一步地，所述微发光二极管的管脚处与第一导电层之间设有金属凸起部，微发光二极管的管脚经金属凸起部与第一导电层连接导通。\n\n[0010]进一步地，所述金属凸起部的截面形状为梯形。\n\n[0011]进一步地，所述金属凸起部外覆盖有石墨烯层。\n\n[0012]进一步地，所述源极以及漏极上覆盖有一层第二导电层，第二导电层与设置在漏极相邻的像素电极上的这部分第一导电层连接。\n\n[0013]进一步地，所述第二导电层由石墨烯材料制成。\n\n[0014]进一步地，所述第一导电层通过等离子体增强气相沉积制程将石墨烯覆盖在像素电极上并且与像素电极的图形重叠形成石墨烯膜得到。\n\n[0015]本发明还提供了一种显示面板，包括CF基板，还包括所述的微发光二极管阵列基板。\n\n[0016]本发明与现有技术相比，通过在像素电极与微发光二极管之间覆盖一层导电层，使得微发光二极管处的热量能够经导电层传导至其他区域，从而提高散热能力。\n\n附图说明\n\n[0017]图1是本发明的第一种微发光二极管阵列基板的结构示意图；\n\n[0018]图2是本发明的第二种微发光二极管阵列基板的结构示意图。\n\n具体实施方式\n\n[0019]下面结合附图和实施例对本发明作进一步详细说明。\n\n[0020]如图1所示，本发明的第一种微发光二极管阵列基板，包括玻璃基板1，在玻璃基板1上采用现有技术依次形成有栅极2、绝缘层3，在绝缘层3上形成有半导体层4以及像素电极5，在半导体层4上设有源极6、漏极7，所述漏极7与相邻的像素电极5连接，在像素电极5上覆盖有一层第一导电层8，第一导电层8上连接有微发光二极管9；在微发光二极管9的管脚处与第一导电层8之间设有金属凸起部10，微发光二极管9的管脚经金属凸起部10与第一导电层8连接导通。\n\n[0021]在第一种微发光二极管阵列基板中，第一导电层8可由石墨烯材料或碳纳米管(CNT)制成，最好为石墨烯材料，石墨烯不仅具有较好的导电能力，同时具有优秀的导热能力，可以有效地讲较大密度排布的微发光二极管9和较大电流密度下的局部区域热能传递到周边温度较低区域，这样能够提高整个显示面板的散热能力。\n\n[0022]所述第一导电层8通过等离子体增强气相沉积制程将石墨烯覆盖在像素电极5上并且与像素电极5的图形重叠形成石墨烯膜得到。\n\n[0023]在金属凸起部10外可覆盖有石墨烯层12；金属凸起部10的截面形状为梯形。\n\n[0024]如图2所示，在第一种微发光二极管阵列基板的基础上，在源极6以及漏极7上也覆盖有一层第二导电层11，第二导电层11与设置在漏极7相邻的像素电极5上的这部分第一导电层8连接；第二导电层11由石墨烯材料制成，通过在源极6、漏极7以及像素电极5上都覆盖导电层，进一步提高散热能力。\n\n[0025]本发明在源极6、漏极7以及像素电极5上覆盖导电层可以提高散热能力外，还可以保护源极6、漏极7以及像素电极5不受到环境腐蚀以及氧化问题，从而保障器件性能。\n\n[0026]本发明中除了对微发光二极管阵列基板设置导电层外，其余部分均与现有技术的TFT器件相同，其中的源极6、漏极7、像素电极5、栅极2可采用Al/Mo/Cu/Mg/Ag/Ti中的一种以上，像素电极5还可以采用ITO(铟锡氧化物半导体导电膜)和Sn及Sn的合金材料；半导体层4可以为非晶硅或多晶硅，其与形成源极6和漏极7的金属层可以叠加n+/p+掺杂层。\n\n[0027]上述的两种微发光二极管阵列基板的结构还可以用于顶栅结构的TFT器件中，同样通过漏极与像素电极相连，从而控制通过微发光二极管的电流。\n\n[0028]本发明还提供了一种显示面板，包括CF(彩色滤光片)基板，还包括上述的微发光二极管阵列基板，在此不再赘述。\n\n[0029]虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。');
INSERT INTO `os_patent_instruction_text` VALUES (10588, 23642, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种透反射式液晶显示器。\n\n背景技术\n\n[0002]液晶显示器(Liquid Crystal Display，LCD)近年来得到了飞速的发展和广泛的应用。通常液晶显示面板由彩膜基板(Color Filter Substrate，CF)、薄膜晶体管基板(Thin Film Transistor Substrate，TFT)、夹于彩膜基板与薄膜晶体管基板之间的液晶(Liquid Crystal，LC)及密封框胶(Sealant)组成；由于液晶分子自身不发光，所以显示面板需要光源以便显示图像，根据采用光源类型的不同，液晶显示器可分为透射式、反射式和透反射式。\n\n[0003]其中，透射式的液晶显示面板主要以背光源作为光源，在液晶面板后面设置有背光源，阵列基板上的像素电极为透明电极作为透射区，有利于背光源的光线透射穿过液晶层来显示图像；\n\n[0004]反射式液晶显示面板主要是以前光源或者外界光源作为光源，其阵列基板采用金属或者其他具有良好反射特性材料的反射电极作为反射区，适于将前光源或者外界光源的光线反射；\n\n[0005]而透反射式液晶显示面板则可视为透射式与反射式液晶显示面板的结合，在阵列基板上既设置有反射区，又设置有透射区，可以同时利用背光源以及前光源或者外界光源以进行显示。\n\n[0006]透射式液晶显示面板的优点是可以在暗的环境下显示明亮的图像，但缺点是能透过的光线占背光源发射光线的比例较小，背光源利用率不高，为提高显示亮度就需要大幅度提高背光源的亮度，因此能耗高。反射式液晶显示面板的优点是能利用外部光源，功耗相对较低，但缺点是由于对外部光源的依赖而无法在暗处显示图像。而透反射式液晶显示面板兼具透射式和反射式液晶显示面板的优点，既可以在暗的环境下显示明亮的图像，同时在室外使用时具有较低的功耗。因此，它被广泛用于便携式移动电子产品的显示设备，如手机，数码相机，掌上电脑，GPRS等移动产品。\n\n[0007]图1为现有一种透反射式液晶显示器的结构示意图，如图1所示，所述透反射式液晶显示器，包括液晶显示面板10和设于所述液晶显示面板10下方的背光源20；其中，所述液晶显示面板10划分成多个相互交错的透射区105和反射区106；所述背光源20包括灯条21、设于灯条21一侧的导光板22，所述液晶显示面板10包括相对设置的上基板11与下基板12、及位于所述上、下基板11、12之间的液晶层13；所述下基板12上对应所述多个反射区106设有金属材料的反射层14，用于将环境光线中入射到液晶显示面板10内的光线进行反射，为所述液晶显示面板10的反射区106提供显示亮度；在背光源20中，灯条21发出的光线进入导光板22并经过导光板22混光后，光线从导光板22的上方射向液晶显示面板10，背光源20发出的光同时射向透射区105和反射区106，其中射向透射区105的光得到了有效地利用，而射向反射区106的光由于反射层14的缘故被完全遮挡住，所以被白白浪费掉。\n\n[0008]为了解决上述技术问题，有必要提供一种改善背光源能量的利用率的技术方案，减少透反射式液晶显示器的功耗，从而达到节能省电的目的，提高显示设备的续航能力。\n\n发明内容\n\n[0009]本发明的目的在于提供一种透反射式液晶显示器，背光源通过与透射区对应设置的微发光二极管阵列向液晶显示面板的透射区提供背光，提高了背光源的利用率和光效率，降低了透反射式液晶显示器的功耗。\n\n[0010]为实现上述目的，本发明提供一种透反射式液晶显示器，包括液晶显示面板和设于所述液晶显示面板下方的背光源；\n\n[0011]所述液晶显示面板包括多个相互交错的透射区和反射区；\n\n[0012]所述背光源包括背光源基板、及设于所述背光源基板上的多个微发光二极管阵列；\n\n[0013]所述多个微发光二极管阵列对应分布于所述液晶显示面板的多个透射区下方的背光源基板上，所述背光源通过所述多个微发光二极管阵列向液晶显示面板的多个透射区提供背光。\n\n[0014]每一微发光二极管阵列包括多个阵列排布的微发光二极管。\n\n[0015]所述背光源中，所述多个微发光二极管阵列通过微转印工艺设置于所述多个透射区在背光源基板的正投影区域上。\n\n[0016]每一微发光二极管阵列在背光源基板上正投影的位置和形状与其所对应的透射区在背光源基板上正投影的位置和形状相同。\n\n[0017]所述液晶显示面板包括相对设置的上基板与下基板、及位于所述上基板和下基板之间的液晶层；\n\n[0018]所述下基板上对应所述多个反射区设有反射层。\n\n[0019]所述反射层为不透光的金属层。\n\n[0020]所述上基板为彩膜基板，所述下基板为薄膜晶体管阵列基板。\n\n[0021]所述上基板上远离所述液晶层的一侧设有上偏光片；\n\n[0022]所述下基板上远离所述液晶层的一侧设有下偏光片。\n\n[0023]所述反射层通过将环境光线中入射到所述透反射式液晶显示器内的光线进行反射，为所述透反射式液晶显示器的反射区提供显示亮度。\n\n[0024]本发明的有益效果：本发明提供了一种透反射式液晶显示器，包括液晶显示面板和背光源；所述液晶显示面板划分成多个相互交错的透射区和反射区；所述背光源包括背光源基板、及设于所述背光源基板上的多个微发光二极管阵列；所述多个微发光二极管阵列对应分布于所述液晶显示面板的多个透射区下方的背光源基板上，所述背光源通过所述多个微发光二极管阵列向液晶显示面板的多个透射区提供背光，从而保证了背光源发出的光只会在透射区投影位置上传播和射出，而不会在反射区投影位置上传播和射出，避免了背光源发出的光射向反射区被白白浪费掉，提高了背光源的利用率和光效率，降低了透反射式液晶显示器的功耗，进而达到节能省电的目的，提高了显示设备的续航能力。\n\n附图说明\n\n[0025]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。\n\n[0026]附图中，\n\n[0027]图1为现有透反射式液晶显示器的结构示意图；\n\n[0028]图2为本发明的透反射式液晶显示器的结构示意图。\n\n具体实施方式\n\n[0029]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0030]微发光二极管(Micro LED)技术，即LED微缩化和矩阵化技术，指的是在一个芯片上集成高密度微小尺寸的LED阵列的技术，如LED阵列中每一颗LED可定址、单独驱动点亮，从而可将像素点距离从毫米级降低至微米级。本发明通过采用微发光二极管阵列向液晶显示面板的透射区提供背光，提高了背光源的利用率和光效率，降低了透反射式液晶显示器的功耗。\n\n[0031]请参阅图2，本发明提供一种透反射式液晶显示器，包括液晶显示面板100和设于所述液晶显示面板100下方的背光源200；\n\n[0032]所述液晶显示面板100包括多个相互交错的透射区101和反射区102；\n\n[0033]所述背光源200包括背光源基板210、及设于所述背光源基板210上的多个微发光二极管阵列220；\n\n[0034]所述多个微发光二极管阵列220对应分布于所述液晶显示面板100的多个透射区101下方的背光源基板210上，所述背光源200通过所述多个微发光二极管阵列220向液晶显示面板100的多个透射区101提供背光。\n\n[0035]本发明的透反射式液晶显示器，所述背光源200通过与透射区101对应设置的微发光二极管阵列220向液晶显示面板100的透射区101提供背光，从而保证了背光源200发出的光只会在透射区101投影位置上传播和射出，而不会在反射区102投影位置上传播和射出，避免了背光源200发出的光射向反射区102被白白浪费掉，提高了背光源200的利用率和光效率，降低了透反射式液晶显示器的功耗，进而达到节能省电的目的，提高了显示设备的续航能力。\n\n[0036]具体地，每一微发光二极管阵列220包括多个阵列排布的微发光二极管221。\n\n[0037]具体地，所述背光源200中，所述多个微发光二极管阵列220通过微转印工艺而精确设置于所述多个透射区101在背光源基板210的正投影区域上。\n\n[0038]具体地，每一微发光二极管阵列220在背光源基板210上正投影的位置和形状与其所对应的透射区101在背光源基板210上正投影的位置和形状精确对应而相同。\n\n[0039]具体地，所述液晶显示面板100包括相对设置的上基板110与下基板120、及位于所述上基板110和下基板120之间的液晶层130；\n\n[0040]所述下基板120上对应所述多个反射区102设有反射层125。\n\n[0041]具体地，所述反射层125为不透光的金属层。\n\n[0042]具体地，所述上基板110为彩膜基板，所述下基板120为薄膜晶体管阵列基板。\n\n[0043]具体地，所述上基板110上远离所述液晶层130的一侧设有上偏光片111；\n\n[0044]所述下基板120上远离所述液晶层130的一侧设有下偏光片121。\n\n[0045]具体地，所述反射层125通过将环境光线中入射到所述液晶显示面板100内的光线进行反射，为所述液晶显示面板100的反射区102提供显示亮度。\n\n[0046]综上所述，本发明提供了一种透反射式液晶显示器，包括液晶显示面板和背光源；所述液晶显示面板划分成多个相互交错的透射区和反射区；所述背光源包括背光源基板、及设于所述背光源基板上的多个微发光二极管阵列；所述多个微发光二极管阵列对应分布于所述液晶显示面板的多个透射区下方的背光源基板上，所述背光源通过所述多个微发光二极管阵列向液晶显示面板的多个透射区提供背光，从而保证了背光源发出的光只会在透射区投影位置上传播和射出，而不会在反射区投影位置上传播和射出，避免了背光源发出的光射向反射区被白白浪费掉，提高了背光源的利用率和光效率，降低了透反射式液晶显示器的功耗，进而达到节能省电的目的，提高了显示设备的续航能力。\n\n[0047]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种透反射式液晶显示器。\n\n背景技术\n\n[0002]液晶显示器(Liquid Crystal Display，LCD)近年来得到了飞速的发展和广泛的应用。通常液晶显示面板由彩膜基板(Color Filter Substrate，CF)、薄膜晶体管基板(Thin Film Transistor Substrate，TFT)、夹于彩膜基板与薄膜晶体管基板之间的液晶(Liquid Crystal，LC)及密封框胶(Sealant)组成；由于液晶分子自身不发光，所以显示面板需要光源以便显示图像，根据采用光源类型的不同，液晶显示器可分为透射式、反射式和透反射式。\n\n[0003]其中，透射式的液晶显示面板主要以背光源作为光源，在液晶面板后面设置有背光源，阵列基板上的像素电极为透明电极作为透射区，有利于背光源的光线透射穿过液晶层来显示图像；\n\n[0004]反射式液晶显示面板主要是以前光源或者外界光源作为光源，其阵列基板采用金属或者其他具有良好反射特性材料的反射电极作为反射区，适于将前光源或者外界光源的光线反射；\n\n[0005]而透反射式液晶显示面板则可视为透射式与反射式液晶显示面板的结合，在阵列基板上既设置有反射区，又设置有透射区，可以同时利用背光源以及前光源或者外界光源以进行显示。\n\n[0006]透射式液晶显示面板的优点是可以在暗的环境下显示明亮的图像，但缺点是能透过的光线占背光源发射光线的比例较小，背光源利用率不高，为提高显示亮度就需要大幅度提高背光源的亮度，因此能耗高。反射式液晶显示面板的优点是能利用外部光源，功耗相对较低，但缺点是由于对外部光源的依赖而无法在暗处显示图像。而透反射式液晶显示面板兼具透射式和反射式液晶显示面板的优点，既可以在暗的环境下显示明亮的图像，同时在室外使用时具有较低的功耗。因此，它被广泛用于便携式移动电子产品的显示设备，如手机，数码相机，掌上电脑，GPRS等移动产品。\n\n[0007]图1为现有一种透反射式液晶显示器的结构示意图，如图1所示，所述透反射式液晶显示器，包括液晶显示面板10和设于所述液晶显示面板10下方的背光源20；其中，所述液晶显示面板10划分成多个相互交错的透射区105和反射区106；所述背光源20包括灯条21、设于灯条21一侧的导光板22，所述液晶显示面板10包括相对设置的上基板11与下基板12、及位于所述上、下基板11、12之间的液晶层13；所述下基板12上对应所述多个反射区106设有金属材料的反射层14，用于将环境光线中入射到液晶显示面板10内的光线进行反射，为所述液晶显示面板10的反射区106提供显示亮度；在背光源20中，灯条21发出的光线进入导光板22并经过导光板22混光后，光线从导光板22的上方射向液晶显示面板10，背光源20发出的光同时射向透射区105和反射区106，其中射向透射区105的光得到了有效地利用，而射向反射区106的光由于反射层14的缘故被完全遮挡住，所以被白白浪费掉。\n\n[0008]为了解决上述技术问题，有必要提供一种改善背光源能量的利用率的技术方案，减少透反射式液晶显示器的功耗，从而达到节能省电的目的，提高显示设备的续航能力。\n\n发明内容\n\n[0009]本发明的目的在于提供一种透反射式液晶显示器，背光源通过与透射区对应设置的微发光二极管阵列向液晶显示面板的透射区提供背光，提高了背光源的利用率和光效率，降低了透反射式液晶显示器的功耗。\n\n[0010]为实现上述目的，本发明提供一种透反射式液晶显示器，包括液晶显示面板和设于所述液晶显示面板下方的背光源；\n\n[0011]所述液晶显示面板包括多个相互交错的透射区和反射区；\n\n[0012]所述背光源包括背光源基板、及设于所述背光源基板上的多个微发光二极管阵列；\n\n[0013]所述多个微发光二极管阵列对应分布于所述液晶显示面板的多个透射区下方的背光源基板上，所述背光源通过所述多个微发光二极管阵列向液晶显示面板的多个透射区提供背光。\n\n[0014]每一微发光二极管阵列包括多个阵列排布的微发光二极管。\n\n[0015]所述背光源中，所述多个微发光二极管阵列通过微转印工艺设置于所述多个透射区在背光源基板的正投影区域上。\n\n[0016]每一微发光二极管阵列在背光源基板上正投影的位置和形状与其所对应的透射区在背光源基板上正投影的位置和形状相同。\n\n[0017]所述液晶显示面板包括相对设置的上基板与下基板、及位于所述上基板和下基板之间的液晶层；\n\n[0018]所述下基板上对应所述多个反射区设有反射层。\n\n[0019]所述反射层为不透光的金属层。\n\n[0020]所述上基板为彩膜基板，所述下基板为薄膜晶体管阵列基板。\n\n[0021]所述上基板上远离所述液晶层的一侧设有上偏光片；\n\n[0022]所述下基板上远离所述液晶层的一侧设有下偏光片。\n\n[0023]所述反射层通过将环境光线中入射到所述透反射式液晶显示器内的光线进行反射，为所述透反射式液晶显示器的反射区提供显示亮度。\n\n[0024]本发明的有益效果：本发明提供了一种透反射式液晶显示器，包括液晶显示面板和背光源；所述液晶显示面板划分成多个相互交错的透射区和反射区；所述背光源包括背光源基板、及设于所述背光源基板上的多个微发光二极管阵列；所述多个微发光二极管阵列对应分布于所述液晶显示面板的多个透射区下方的背光源基板上，所述背光源通过所述多个微发光二极管阵列向液晶显示面板的多个透射区提供背光，从而保证了背光源发出的光只会在透射区投影位置上传播和射出，而不会在反射区投影位置上传播和射出，避免了背光源发出的光射向反射区被白白浪费掉，提高了背光源的利用率和光效率，降低了透反射式液晶显示器的功耗，进而达到节能省电的目的，提高了显示设备的续航能力。\n\n附图说明\n\n[0025]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。\n\n[0026]附图中，\n\n[0027]图1为现有透反射式液晶显示器的结构示意图；\n\n[0028]图2为本发明的透反射式液晶显示器的结构示意图。\n\n具体实施方式\n\n[0029]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0030]微发光二极管(Micro LED)技术，即LED微缩化和矩阵化技术，指的是在一个芯片上集成高密度微小尺寸的LED阵列的技术，如LED阵列中每一颗LED可定址、单独驱动点亮，从而可将像素点距离从毫米级降低至微米级。本发明通过采用微发光二极管阵列向液晶显示面板的透射区提供背光，提高了背光源的利用率和光效率，降低了透反射式液晶显示器的功耗。\n\n[0031]请参阅图2，本发明提供一种透反射式液晶显示器，包括液晶显示面板100和设于所述液晶显示面板100下方的背光源200；\n\n[0032]所述液晶显示面板100包括多个相互交错的透射区101和反射区102；\n\n[0033]所述背光源200包括背光源基板210、及设于所述背光源基板210上的多个微发光二极管阵列220；\n\n[0034]所述多个微发光二极管阵列220对应分布于所述液晶显示面板100的多个透射区101下方的背光源基板210上，所述背光源200通过所述多个微发光二极管阵列220向液晶显示面板100的多个透射区101提供背光。\n\n[0035]本发明的透反射式液晶显示器，所述背光源200通过与透射区101对应设置的微发光二极管阵列220向液晶显示面板100的透射区101提供背光，从而保证了背光源200发出的光只会在透射区101投影位置上传播和射出，而不会在反射区102投影位置上传播和射出，避免了背光源200发出的光射向反射区102被白白浪费掉，提高了背光源200的利用率和光效率，降低了透反射式液晶显示器的功耗，进而达到节能省电的目的，提高了显示设备的续航能力。\n\n[0036]具体地，每一微发光二极管阵列220包括多个阵列排布的微发光二极管221。\n\n[0037]具体地，所述背光源200中，所述多个微发光二极管阵列220通过微转印工艺而精确设置于所述多个透射区101在背光源基板210的正投影区域上。\n\n[0038]具体地，每一微发光二极管阵列220在背光源基板210上正投影的位置和形状与其所对应的透射区101在背光源基板210上正投影的位置和形状精确对应而相同。\n\n[0039]具体地，所述液晶显示面板100包括相对设置的上基板110与下基板120、及位于所述上基板110和下基板120之间的液晶层130；\n\n[0040]所述下基板120上对应所述多个反射区102设有反射层125。\n\n[0041]具体地，所述反射层125为不透光的金属层。\n\n[0042]具体地，所述上基板110为彩膜基板，所述下基板120为薄膜晶体管阵列基板。\n\n[0043]具体地，所述上基板110上远离所述液晶层130的一侧设有上偏光片111；\n\n[0044]所述下基板120上远离所述液晶层130的一侧设有下偏光片121。\n\n[0045]具体地，所述反射层125通过将环境光线中入射到所述液晶显示面板100内的光线进行反射，为所述液晶显示面板100的反射区102提供显示亮度。\n\n[0046]综上所述，本发明提供了一种透反射式液晶显示器，包括液晶显示面板和背光源；所述液晶显示面板划分成多个相互交错的透射区和反射区；所述背光源包括背光源基板、及设于所述背光源基板上的多个微发光二极管阵列；所述多个微发光二极管阵列对应分布于所述液晶显示面板的多个透射区下方的背光源基板上，所述背光源通过所述多个微发光二极管阵列向液晶显示面板的多个透射区提供背光，从而保证了背光源发出的光只会在透射区投影位置上传播和射出，而不会在反射区投影位置上传播和射出，避免了背光源发出的光射向反射区被白白浪费掉，提高了背光源的利用率和光效率，降低了透反射式液晶显示器的功耗，进而达到节能省电的目的，提高了显示设备的续航能力。\n\n[0047]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10589, 23643, '技术领域\n\n[0001]本发明涉及显示领域，具体涉及一种背光模组及液晶显示装置。\n\n背景技术\n\n[0002]LCD(Liquid Crystal Display,液晶显示装置)的背光模组(Backlight Module)包括两种入光方式，分别为侧入光式和直下光式。\n\n[0003]如图1所示，在侧入光式背光模组的结构设计中，光源11设置于导光板12的侧方，光源11发出的光从导光板12的入光面进入导光板12，并在导光板12内部经过漫反射后从导光板12的出光面射出，再经由各种光学膜片13，例如扩散片，形成均匀的面光源并提供给液晶面板14。由于光源11发出的光较为发散，从而在进入导光板12后不易实现区域化，即不易实现区域亮度控制(local dimming)。\n\n[0004]如图2所示，在直下光式背光模组的结构设计中，光源21设置于导光板22的下方，光源21发出的光经过导光板22和各种光学膜片23后形成均匀的面光源，并提供给液晶面板24。直下光式背光模组通过控制导光板22下方的光源21可以实现区域亮度控制。但是，为了确保区域亮度控制的显示品质，光源21和导光板22之间必须设置混光距离，才能使得光源21发出的光混光充足，并以此保证显示区域的亮度均匀。但是，该混光距离的设置不利于背光模组的轻薄化设计要求。\n\n发明内容\n\n[0005]有鉴于此，本发明提供一种背光模组及液晶显示装置，能够在实现区域亮度控制的同时有利于背光模组的轻薄化设计要求。\n\n[0006]本发明一实施例的背光模组，包括导光板和光源，导光板包括沿平行于导光板方向设置的第一区域和第二区域，导光板在第一区域设置有衍射光栅，光源位于衍射光栅的下方，导光板在第二区域邻近第一区域的一侧设置有入光面，衍射光栅用于对光源发出的光进行衍射，使得光以预定极角从入光面进入导光板的第二区域。\n\n[0007]本发明一实施例的液晶显示装置，包括上述背光模组。\n\n[0008]有益效果：本发明设计导光板在第一区域设置有衍射光栅，并将第二区域邻近衍射光栅的一侧设置为入光面，第二区域的导光板可视为侧入光式导光板，本发明相当于通过衍射光栅将垂直方向的光引入侧入光式导光板，无需直下光式背光模组所需要的混光距离，从而能够在实现区域亮度控制的同时有利于背光模组的轻薄化设计要求。\n\n附图说明\n\n[0009]图1是现有技术中具有侧入光式背光模组的LCD的结构剖视图；\n\n[0010]图2是现有技术中具有直下光式背光模组的LCD的结构剖视图；\n\n[0011]图3是本发明第一实施例的背光模组的结构剖视图；\n\n[0012]图4是图3所示背光模组的结构俯视图；\n\n[0013]图5是本发明第二实施例的背光模组的结构剖视图；\n\n[0014]图6是图5所示背光模组的结构俯视图；\n\n[0015]图7是本发明一实施例的液晶显示装置的结构剖视图。\n\n具体实施方式\n\n[0016]下面将结合本发明实施例中的附图，对本发明所提供的各个示例性的实施例的技术方案进行清楚、完整地描述。在不冲突的情况下，下述各个实施例及其技术特征可以相互组合。\n\n[0017]请参阅图3，为本发明第一实施例的背光模组。所述背光模组30包括背板31以及承载于背板31上的多个光源32、导光板33、驱动电路34以及各种光学膜片35。多个光源32与驱动电路34连接，驱动电路34可以为FPCB(Flexible Printed Circuit Board,柔性印刷电路板)，并设置于背板31邻近导光板33的一侧，驱动电路34可以单独控制各个光源32的开关以及亮度。导光板33和光学膜片35设置于多个光源32的上方，用于将多个光源32发出的光转换为均匀的面光源，并提供给设置于导光板33的出光面上的液晶面板。其中，光学膜片35包括但不限于扩散片(diffuser)和偏振片(polarizer)。\n\n[0018]导光板33包括沿平行于导光板33方向依次交替排布的第一区域331和第二区域332，第一区域331的宽度小于第二区域332的宽度。导光板33在第一区域331的厚度等于其在第二区域332的厚度。导光板33在第一区域331设置有衍射光栅333，该衍射光栅333可以位于第一区域331的导光板33的底面，每一个光源32设置于对应的一个衍射光栅333的下方。导光板33在第二区域332邻近第一区域331的一侧设置有入光面，即，所述入光面设置于第二区域332的导光板33的侧方，第二区域332的导光板22可视为侧入光式导光板。其中，导光板33可以为一体成型结构，第一区域331和第二区域332之间相互导通，且导光板33在第一区域331和第二区域332的折射率相同，基于此，所述入光面并非是一个暴露于外的侧面。\n\n[0019]衍射光栅333用于对光源32发出的光进行衍射，使得光以预定极角从入光面进入导光板33的第二区域332。也就是说，衍射光栅333可以将光源32发出的垂直方向的光转变为非垂直方向的光。其中，衍射光栅333可以使得光源32发出的光经过衍射后仅有第一级衍射峰进入可视区，其余各级衍射峰均位于可视区之外，换言之，经过衍射光栅333的光(出射光)仅有第一级衍射峰能够以预定极角从入光面进入导光板33的第二区域332。根据衍射光栅333的工作原理，出射光的第一级衍射峰的极角坐标(φ1,θ1)满足如下关系式：\n\n[0020]tanφ1＝sinφ/(cosφ-N*sinθ*(Λ/λ)\n\n[0021]sin2(θ1)＝(Λ/λ)2+(N*sinφ)2-2N*sinθ*cosφ*(λ/Λ)\n\n[0022]其中，φ1表示出射光的极径，θ1表示出射光的极角，Λ表示衍射光栅333的周期，φ表示出射光的方位角，N表示导光板33的折射率，θ表示进入衍射光栅333的光(入射光)的极角，λ表示入射光的波长。\n\n[0023]由上述关系式可知，本实施例可以通过选取具有预定折射率的导光板33，使得光经过衍射后仅有第一级衍射峰进入可视区。\n\n[0024]为了提高光利用率，本实施例的导光板33在第一区域331的顶面可以对经过衍射后且具有预定极角的光进行全反射，以避免光从导光板33在第一区域331的顶面出射入空气中。\n\n[0025]第二区域332的导光板33与现有侧入光式导光板的结构相同，例如导光板33在第二区域332的底部可以设置有多个撞点334，光以预定极角进入第二区域332并照射到各个撞点334后发生漫反射，漫反射的光从导光板33在第二区域332的出光面射出，并经过光学膜片35后，形成均匀的面光源并提供给液晶面板。\n\n[0026]结合图4所示，背光模组30包括呈矩阵排布的多个亮度调控区域36，每一亮度调控区域36设置有一个光源32、一个第一区域331和一个第二区域332。本实施例通过驱动电路34单独控制各个光源32，即可调整各个亮度调控区域36的亮度，容易实现区域亮度控制。\n\n[0027]由上述可知，本实施例通过衍射光栅333将垂直方向的光引入侧入光式导光板(第二区域332的导光板33)的入光面，无需直下光式背光模组所需要的混光距离，从而能够在容易实现区域亮度控制的同时，有利于背光模组30的轻薄化设计要求。\n\n[0028]另外，光源32可以采用微米级LED(Micro Light Emitting Diode,微米级发光二极管)，即LED具有微米级的厚度，从而能够进一步降低背光模组30的厚度，有利于背光模组30的轻薄化设计要求。\n\n[0029]图5为本发明第二实施例的背光模组。如图5所示，背光模组50包括背板51以及承载于背板51上的多个光源52、导光板53、驱动电路54以及各种光学膜片55。多个光源52与驱动电路54连接，驱动电路54可以为FPCB，并设置于背板51邻近导光板53的一侧，驱动电路54可以单独控制各个光源52的开关以及亮度。导光板53和光学膜片55设置于多个光源52的上方，用于将多个光源52发出的光转换为均匀的面光源，并提供给设置于导光板53的出光面上的液晶面板。其中，光学膜片55包括但不限于扩散片和偏振片。\n\n[0030]导光板53包括沿平行于导光板53方向设置的第一区域531和第二区域532，第一区域531的宽度小于第二区域532的宽度。导光板53在第一区域531的厚度小于其在第二区域532的厚度，即，导光板53在第一区域531的底部与其在第二区域532的底部之间具有预设垂直距离。导光板53在第一区域531设置有衍射光栅533，该衍射光栅533可以位于第一区域531的导光板53的底部，每一个光源52设置于对应的一个衍射光栅533的下方。导光板53在第二区域532邻近第一区域531的一侧设置有入光面，即所述入光面设置于第二区域532的导光板53的侧方，第二区域532的导光板22可视为侧入光式导光板。导光板53可以为一体成型结构，第一区域531和第二区域532之间相互导通，且导光板53在第一区域531和第二区域532的折射率相同。\n\n[0031]衍射光栅533用于对光源52发出的光进行衍射，使得光以预定极角从入光面进入导光板53的第二区域532。\n\n[0032]第二区域532的导光板53与现有侧入光式导光板的结构相同，例如导光板53在第二区域532的底部可以设置有多个撞点534，光以预定极角进入第二区域532并照射到各个撞点534后发生漫反射，漫反射的光从导光板53在第二区域532的出光面射出，并经过光学膜片55后，形成均匀的面光源并提供给液晶面板。\n\n[0033]不同于图3所示实施例的导光板33，本实施例的导光板53相当于在每一光源52的上方设置了一个凹槽，且光源52可以位于对应的凹槽中，导光板53在第二区域532的入光面邻近光源52设置。基于此，第二区域532的导光板53不仅可以从而衍射光栅533接收光，而且可以直接从光源52接收光，从而提高光利用率。\n\n[0034]进一步结合图6所示，本实施例的背光模组60包括呈矩阵排布的多个亮度调控区域66，每一亮度调控区域66设置有一个光源52、一个第一区域531和一个第二区域532。本实施例通过驱动电路54单独控制各个光源52，即可调整各个亮度调控区域56的亮度，容易实现区域亮度控制。\n\n[0035]由上述可知，本实施例通过衍射光栅533将垂直方向的光引入侧入光式导光板(第二区域532的导光板53)的入光面，无需直下光式背光模组所需要的混光距离，从而能够在容易实现区域亮度控制的同时，有利于背光模组50的轻薄化设计要求。\n\n[0036]另外，光源52可以采用微米级LED，从而能够进一步降低背光模组50的厚度，有利于背光模组50的轻薄化设计要求。\n\n[0037]应该理解到，图3所示背光模组30和图5所示背光模组50仅为阐述本发明之发明目的示意图，本发明的背光模组还可以具有其他结构。例如，背光模组还可以包括胶框，胶框围绕导光板设置，并将设置于导光板的出光面上的液晶面板压持固定于导光板上。另外，本发明的导光板的制造材质可以为PC(Polycarbonate，聚碳酸酯或工程塑料)，也可以为玻璃，并且由于光在玻璃中的扩散良于PC，因此要将点光源转换为面光源并实现相同的均匀度，光在玻璃材质的导光板中所需折射的路径小于在PC材质的导光板中所需折射的路径，因此采用玻璃材质能够降低导光板的厚度，从而降低整个背光模组的厚度。\n\n[0038]本发明还提供一种液晶显示装置。如图7所示，所述液晶显示装置70包括背光模组71以及设置于背光模组71的出光方向上的液晶面板72。该背光模组71可以为图3所示的背光模组30，也可以为图5所示的背光模组50，因此，所述液晶显示装置70具有上述背光模组30、50所能产生的有益效果。\n\n[0039]以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，例如各实施例之间技术特征的相互结合，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。', '技术领域\n\n[0001]本发明涉及显示领域，具体涉及一种背光模组及液晶显示装置。\n\n背景技术\n\n[0002]LCD(Liquid Crystal Display,液晶显示装置)的背光模组(Backlight Module)包括两种入光方式，分别为侧入光式和直下光式。\n\n[0003]如图1所示，在侧入光式背光模组的结构设计中，光源11设置于导光板12的侧方，光源11发出的光从导光板12的入光面进入导光板12，并在导光板12内部经过漫反射后从导光板12的出光面射出，再经由各种光学膜片13，例如扩散片，形成均匀的面光源并提供给液晶面板14。由于光源11发出的光较为发散，从而在进入导光板12后不易实现区域化，即不易实现区域亮度控制(local dimming)。\n\n[0004]如图2所示，在直下光式背光模组的结构设计中，光源21设置于导光板22的下方，光源21发出的光经过导光板22和各种光学膜片23后形成均匀的面光源，并提供给液晶面板24。直下光式背光模组通过控制导光板22下方的光源21可以实现区域亮度控制。但是，为了确保区域亮度控制的显示品质，光源21和导光板22之间必须设置混光距离，才能使得光源21发出的光混光充足，并以此保证显示区域的亮度均匀。但是，该混光距离的设置不利于背光模组的轻薄化设计要求。\n\n发明内容\n\n[0005]有鉴于此，本发明提供一种背光模组及液晶显示装置，能够在实现区域亮度控制的同时有利于背光模组的轻薄化设计要求。\n\n[0006]本发明一实施例的背光模组，包括导光板和光源，导光板包括沿平行于导光板方向设置的第一区域和第二区域，导光板在第一区域设置有衍射光栅，光源位于衍射光栅的下方，导光板在第二区域邻近第一区域的一侧设置有入光面，衍射光栅用于对光源发出的光进行衍射，使得光以预定极角从入光面进入导光板的第二区域。\n\n[0007]本发明一实施例的液晶显示装置，包括上述背光模组。\n\n[0008]有益效果：本发明设计导光板在第一区域设置有衍射光栅，并将第二区域邻近衍射光栅的一侧设置为入光面，第二区域的导光板可视为侧入光式导光板，本发明相当于通过衍射光栅将垂直方向的光引入侧入光式导光板，无需直下光式背光模组所需要的混光距离，从而能够在实现区域亮度控制的同时有利于背光模组的轻薄化设计要求。\n\n附图说明\n\n[0009]图1是现有技术中具有侧入光式背光模组的LCD的结构剖视图；\n\n[0010]图2是现有技术中具有直下光式背光模组的LCD的结构剖视图；\n\n[0011]图3是本发明第一实施例的背光模组的结构剖视图；\n\n[0012]图4是图3所示背光模组的结构俯视图；\n\n[0013]图5是本发明第二实施例的背光模组的结构剖视图；\n\n[0014]图6是图5所示背光模组的结构俯视图；\n\n[0015]图7是本发明一实施例的液晶显示装置的结构剖视图。\n\n具体实施方式\n\n[0016]下面将结合本发明实施例中的附图，对本发明所提供的各个示例性的实施例的技术方案进行清楚、完整地描述。在不冲突的情况下，下述各个实施例及其技术特征可以相互组合。\n\n[0017]请参阅图3，为本发明第一实施例的背光模组。所述背光模组30包括背板31以及承载于背板31上的多个光源32、导光板33、驱动电路34以及各种光学膜片35。多个光源32与驱动电路34连接，驱动电路34可以为FPCB(Flexible Printed Circuit Board,柔性印刷电路板)，并设置于背板31邻近导光板33的一侧，驱动电路34可以单独控制各个光源32的开关以及亮度。导光板33和光学膜片35设置于多个光源32的上方，用于将多个光源32发出的光转换为均匀的面光源，并提供给设置于导光板33的出光面上的液晶面板。其中，光学膜片35包括但不限于扩散片(diffuser)和偏振片(polarizer)。\n\n[0018]导光板33包括沿平行于导光板33方向依次交替排布的第一区域331和第二区域332，第一区域331的宽度小于第二区域332的宽度。导光板33在第一区域331的厚度等于其在第二区域332的厚度。导光板33在第一区域331设置有衍射光栅333，该衍射光栅333可以位于第一区域331的导光板33的底面，每一个光源32设置于对应的一个衍射光栅333的下方。导光板33在第二区域332邻近第一区域331的一侧设置有入光面，即，所述入光面设置于第二区域332的导光板33的侧方，第二区域332的导光板22可视为侧入光式导光板。其中，导光板33可以为一体成型结构，第一区域331和第二区域332之间相互导通，且导光板33在第一区域331和第二区域332的折射率相同，基于此，所述入光面并非是一个暴露于外的侧面。\n\n[0019]衍射光栅333用于对光源32发出的光进行衍射，使得光以预定极角从入光面进入导光板33的第二区域332。也就是说，衍射光栅333可以将光源32发出的垂直方向的光转变为非垂直方向的光。其中，衍射光栅333可以使得光源32发出的光经过衍射后仅有第一级衍射峰进入可视区，其余各级衍射峰均位于可视区之外，换言之，经过衍射光栅333的光(出射光)仅有第一级衍射峰能够以预定极角从入光面进入导光板33的第二区域332。根据衍射光栅333的工作原理，出射光的第一级衍射峰的极角坐标(φ1,θ1)满足如下关系式：\n\n[0020]tanφ1＝sinφ/(cosφ-N*sinθ*(Λ/λ)\n\n[0021]sin2(θ1)＝(Λ/λ)2+(N*sinφ)2-2N*sinθ*cosφ*(λ/Λ)\n\n[0022]其中，φ1表示出射光的极径，θ1表示出射光的极角，Λ表示衍射光栅333的周期，φ表示出射光的方位角，N表示导光板33的折射率，θ表示进入衍射光栅333的光(入射光)的极角，λ表示入射光的波长。\n\n[0023]由上述关系式可知，本实施例可以通过选取具有预定折射率的导光板33，使得光经过衍射后仅有第一级衍射峰进入可视区。\n\n[0024]为了提高光利用率，本实施例的导光板33在第一区域331的顶面可以对经过衍射后且具有预定极角的光进行全反射，以避免光从导光板33在第一区域331的顶面出射入空气中。\n\n[0025]第二区域332的导光板33与现有侧入光式导光板的结构相同，例如导光板33在第二区域332的底部可以设置有多个撞点334，光以预定极角进入第二区域332并照射到各个撞点334后发生漫反射，漫反射的光从导光板33在第二区域332的出光面射出，并经过光学膜片35后，形成均匀的面光源并提供给液晶面板。\n\n[0026]结合图4所示，背光模组30包括呈矩阵排布的多个亮度调控区域36，每一亮度调控区域36设置有一个光源32、一个第一区域331和一个第二区域332。本实施例通过驱动电路34单独控制各个光源32，即可调整各个亮度调控区域36的亮度，容易实现区域亮度控制。\n\n[0027]由上述可知，本实施例通过衍射光栅333将垂直方向的光引入侧入光式导光板(第二区域332的导光板33)的入光面，无需直下光式背光模组所需要的混光距离，从而能够在容易实现区域亮度控制的同时，有利于背光模组30的轻薄化设计要求。\n\n[0028]另外，光源32可以采用微米级LED(Micro Light Emitting Diode,微米级发光二极管)，即LED具有微米级的厚度，从而能够进一步降低背光模组30的厚度，有利于背光模组30的轻薄化设计要求。\n\n[0029]图5为本发明第二实施例的背光模组。如图5所示，背光模组50包括背板51以及承载于背板51上的多个光源52、导光板53、驱动电路54以及各种光学膜片55。多个光源52与驱动电路54连接，驱动电路54可以为FPCB，并设置于背板51邻近导光板53的一侧，驱动电路54可以单独控制各个光源52的开关以及亮度。导光板53和光学膜片55设置于多个光源52的上方，用于将多个光源52发出的光转换为均匀的面光源，并提供给设置于导光板53的出光面上的液晶面板。其中，光学膜片55包括但不限于扩散片和偏振片。\n\n[0030]导光板53包括沿平行于导光板53方向设置的第一区域531和第二区域532，第一区域531的宽度小于第二区域532的宽度。导光板53在第一区域531的厚度小于其在第二区域532的厚度，即，导光板53在第一区域531的底部与其在第二区域532的底部之间具有预设垂直距离。导光板53在第一区域531设置有衍射光栅533，该衍射光栅533可以位于第一区域531的导光板53的底部，每一个光源52设置于对应的一个衍射光栅533的下方。导光板53在第二区域532邻近第一区域531的一侧设置有入光面，即所述入光面设置于第二区域532的导光板53的侧方，第二区域532的导光板22可视为侧入光式导光板。导光板53可以为一体成型结构，第一区域531和第二区域532之间相互导通，且导光板53在第一区域531和第二区域532的折射率相同。\n\n[0031]衍射光栅533用于对光源52发出的光进行衍射，使得光以预定极角从入光面进入导光板53的第二区域532。\n\n[0032]第二区域532的导光板53与现有侧入光式导光板的结构相同，例如导光板53在第二区域532的底部可以设置有多个撞点534，光以预定极角进入第二区域532并照射到各个撞点534后发生漫反射，漫反射的光从导光板53在第二区域532的出光面射出，并经过光学膜片55后，形成均匀的面光源并提供给液晶面板。\n\n[0033]不同于图3所示实施例的导光板33，本实施例的导光板53相当于在每一光源52的上方设置了一个凹槽，且光源52可以位于对应的凹槽中，导光板53在第二区域532的入光面邻近光源52设置。基于此，第二区域532的导光板53不仅可以从而衍射光栅533接收光，而且可以直接从光源52接收光，从而提高光利用率。\n\n[0034]进一步结合图6所示，本实施例的背光模组60包括呈矩阵排布的多个亮度调控区域66，每一亮度调控区域66设置有一个光源52、一个第一区域531和一个第二区域532。本实施例通过驱动电路54单独控制各个光源52，即可调整各个亮度调控区域56的亮度，容易实现区域亮度控制。\n\n[0035]由上述可知，本实施例通过衍射光栅533将垂直方向的光引入侧入光式导光板(第二区域532的导光板53)的入光面，无需直下光式背光模组所需要的混光距离，从而能够在容易实现区域亮度控制的同时，有利于背光模组50的轻薄化设计要求。\n\n[0036]另外，光源52可以采用微米级LED，从而能够进一步降低背光模组50的厚度，有利于背光模组50的轻薄化设计要求。\n\n[0037]应该理解到，图3所示背光模组30和图5所示背光模组50仅为阐述本发明之发明目的示意图，本发明的背光模组还可以具有其他结构。例如，背光模组还可以包括胶框，胶框围绕导光板设置，并将设置于导光板的出光面上的液晶面板压持固定于导光板上。另外，本发明的导光板的制造材质可以为PC(Polycarbonate，聚碳酸酯或工程塑料)，也可以为玻璃，并且由于光在玻璃中的扩散良于PC，因此要将点光源转换为面光源并实现相同的均匀度，光在玻璃材质的导光板中所需折射的路径小于在PC材质的导光板中所需折射的路径，因此采用玻璃材质能够降低导光板的厚度，从而降低整个背光模组的厚度。\n\n[0038]本发明还提供一种液晶显示装置。如图7所示，所述液晶显示装置70包括背光模组71以及设置于背光模组71的出光方向上的液晶面板72。该背光模组71可以为图3所示的背光模组30，也可以为图5所示的背光模组50，因此，所述液晶显示装置70具有上述背光模组30、50所能产生的有益效果。\n\n[0039]以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，例如各实施例之间技术特征的相互结合，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。');
INSERT INTO `os_patent_instruction_text` VALUES (10590, 23644, '技术领域\n\n[0001]本发明涉及一种微发光二极管显示技术领域，特别是一种微发光二极管的转印装置。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED，μLED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，μLED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但μLED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]微转印(Micro Transfer Printing)技术是目前制备μLED显示装置的主流方法，具体制备过程为：首先在蓝宝石类基板生长出微发光二极管，然后通过激光剥离技术(Laser lift-off，LLO)将微发光二极管裸芯片(bare chip)从蓝宝石类基板上分离开，随后使用一个图案化的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)传送头将微发光二极管裸芯片从蓝宝石类基板吸附起来，并将PDMS传送头与接收基板进行对位，随后将PDMS传送头所吸附的微发光二极管裸芯片贴附到接收基板上预设的位置，再剥离PDMS传送头，即可完成将微发光二极管裸芯片转移到接收基板上，进而制得μLED显示装置。\n\n[0005]而目前的转印一般采用通电吸附或PDMS的方式粘附进行转印，当使用PDMS方式进行剥离时存在较难控制剥离效果；当使用通电吸附时则需要对每个吸附头进行导通，不仅复杂而且剥离效果欠佳；目前还有一种通过温度控制来进行微发光二极管转印的技术，其原理是通过低温剥离型胶水，其转印的过程分为吸附-转移-降温最终完成转印，上述的两种转印方式不仅结构复杂，而且效率低。\n\n发明内容\n\n[0006]为克服现有技术的不足，本发明提供一种转印模板及微发光二极管的转印装置，不仅结构简单而且转印效率高。\n\n[0007]本发明提供了一种转印模板，包括转移衬底，所述转移衬底的一侧表面上均匀阵列有凸起，在凸起的表面上以及凸起之间的间隙内覆盖有随温度变化改变胶体黏度的温控胶。\n\n[0008]进一步地，所述凸起的形状为矩形。\n\n[0009]进一步地，所述凸起之间的间隙的距离相等。\n\n[0010]本发明还提供了一种微发光二极管的转印装置，包括机架，在机架上设有待转移平台以及与待转移平台相邻的转移平台，在机架上方设有可从待转移平台移动至转移平台并且可上下移动的转移机构，转移机构上设有所述的转印模板，所述凸起与待转移平台以及转移平台相对设置，在转移机构上设有为转印模板加热的加热装置，加热装置的加热面朝下，转印模板通过紧固件固定在加热装置的加热面上，在转移平台内设有为转印模板降温的冷却装置，转移平台的冷却面与加热面相对，在机架上设有电源，电源分别为加热装置、冷却装置以及转移机构供电。\n\n[0011]进一步地，所述凸起的形状为矩形。\n\n[0012]进一步地，所述凸起之间的间隙的距离相等。\n\n[0013]进一步地，所述转移机构包括设于机架上位于待转移平台以及转移平台上方处的导轨、驱动加热装置以及转印模板水平移动的第一传动机构以及设于驱动加热装置以及转印模板上下移动的第二传动机构，第二传动机构与导轨15的滑块连接固定。\n\n[0014]进一步地，所述第一传动机构包括设置在导轨两端的转轮，转轮的轴向与导轨垂直，在其中一个转轮上设有驱动电机，两个转轮上套有传动带，第二传动机构通过固定块与传动带连接。\n\n[0015]进一步地，所述第二传动机构为气缸，气缸的活塞杆的轴线与导轨垂直，加热装置设置在气缸的活塞杆下端。\n\n[0016]本发明与现有技术相比，通过在转移衬底上设置可根据温度变化改变胶体黏度的温控胶以及与之相适配的转印装置，实现通过温度调节进行微发光二极管的转印，不仅结构简单，而且转印效率高。\n\n附图说明\n\n[0017]图1是本发明的转印模板的结构示意图；\n\n[0018]图2是本发明的转印模版的内部结构示意图；\n\n[0019]图3是本发明的微发光二极管的转印装置的结构示意图；\n\n[0020]图4是本发明加热装置的结构示意图；\n\n[0021]图5是本发明冷却装置的结构示意图。\n\n具体实施方式\n\n[0022]下面结合附图和实施例对本发明作进一步详细说明。\n\n[0023]如图1和图2所示，本发明的转印模板14包括一板状的转移衬底1，在转移衬底1的一侧表面上均匀阵列有凸起2，在凸起2的表面上以及凸起2之间的间隙内覆盖有随温度变化改变胶体黏度的温控胶3，温控胶3可以为低温剥离型温控胶，在温度为20-60℃之间时，胶体失去黏度，可以进行剥离。\n\n[0024]具体地，所述凸起2的形状为矩形，其表面尺寸与供给衬底11上的微发光二极管的尺寸相适配；所述凸起2之间的间隙的距离相等，具体为凸起2之间的间隙距离与供给衬底11上两个微发光二极管之间的间隙距离相等，从而实现吸附。\n\n[0025]本发明中转移衬底1为柔性材料制成，如PDMS(polydimethylsiloxane聚二甲基硅氧烷)、PI(Polyimide聚酰亚胺)或PET(Polyethylene terephthalate聚对苯二甲酸乙二醇酯)材料。\n\n[0026]如图3所示，本发明还公开了一种微发光二极管的转印装置，包括机架4，在机架4上设有待转移平台5以及与待转移平台5相邻的转移平台6，待转移平台5用于承载供给衬底11，转移平台5用于承载接收衬底12，在机架4上方设有可从待转移平台5水平移动至转移平台6的转移机构7，转移机构7上设有转印模板14；转印模板14包括一板状的转移衬底1(图1和图2所示)，在转移衬底1的一侧表面上均匀阵列有凸起2，凸起2与待转移平台5以及转移平台6的表面相对，在凸起2的表面上以及凸起2之间的间隙内覆盖有随温度变化改变胶体黏度的温控胶3，温控胶3可以为低温剥离型温控胶，在温度为20-60℃之间时，胶体失去黏度，可以进行剥离；\n\n[0027]在转移机构7上设有为转印模板14加热的加热装置9，加热装置9的加热面朝下，转印模板14通过紧固件固定在加热装置9的加热面上，在转移平台6内设有为转印模板14降温的冷却装置10，转移平台6的冷却面与加热面相对，在机架4上设有电源8，电源8分别为加热装置9、冷却装置10以及转移机构7供电。\n\n[0028]本发明中转印模板14通过螺栓或卡片(图中未示出)与加热装置9进行固定。\n\n[0029]本发明的微发光二极管的转印装置中，凸起2的形状为矩形，其表面尺寸与供给衬底11上的微发光二极管的尺寸相适配；所述凸起2之间的间隙的距离相等，具体为凸起2之间的间隙距离与供给衬底11上两个微发光二极管之间的间隙距离相等，从而实现吸附。\n\n[0030]如图3所示，所述转移机构7包括设于机架4上位于待转移平台5以及转移平台6上方处的导轨15、驱动加热装置9以及转印模板14水平移动的第一传动机构以及设于驱动加热装置9以及转印模板14上下移动的第二传动机构，第二传动机构与导轨15的滑块连接固定。\n\n[0031]在本发明中，第一传动机构以及第二传动机构可以采用现有技术的传动带传动、齿条传动、丝杆转动等方式实现水平以及上下的移动。\n\n[0032]如图3所示，作为第一传动机构的一种示例，第一传动机构包括设置在导轨两端的转轮16，转轮16的轴向与导轨垂直，在其中一个转轮16上设有驱动电机17，两个转轮16上套有传动带18，第二传动机构通过固定块与传动带18连接，两个转轮16通过L型固定架固定在机架4上，驱动电机17与电源8连接。\n\n[0033]如图3所示，作为第二传动机构的一种示例，本发明中第二传动机构为气缸19，气缸19的轴杆的轴线与导轨15垂直，气缸19的缸体与导轨15的滑块以及传动带18连接固定，气缸19与传动带18的连接具体为与传动带18的上侧或下侧带体连接，加热装置9设置在气缸19的活塞杆下端。\n\n[0034]本发明的工作原理如下：通过第一传动机构将加温装置9以及转印模板14水平移动至待转移平台5上方，开启加热装置9对转印模板14加热，使温控胶3黏度较大，第二传动机构带动加热装置9以及转印模板14下移，转印模板14将供给衬底11上的微发光二极管粘附后，第二传动机构带动加热装置9以及转印模板14上移并通过第一传动机构移动至转移平台6上方，第二传动机构带动加热装置9以及转印模板14下移，此时冷却装置10开启，加热装置9关闭，当转印模板14下移至接收衬底12上后，由于温度下降，使温控胶的黏度降低，从而将微发光二极管13从转印模板14上剥离，完成微发光二极管13的转印。\n\n[0035]根据这一原理，本发明中的加热装置9以及冷却装置10可根据温控胶3的属性进行对调，即若温控胶3为加温剥离型温控胶时，温度在30-50℃之间黏度降低可进行剥离，这时，加热装置9以及冷却装置10的设置位置相反，即转移机构7上设置的为冷却装置10，而转移平台6上设置的为加热装置9。\n\n[0036]本发明中的加热装置可采用现有技术的加热平台，如恒温加热平台；也可以采用如下方式实现，如图4所示，其包括具有加热面的金属板20，在金属板20上设有PTC加热片21，通过电源8对PTC加热片21加电，使PTC加热片21产生热量，通过金属板20传导至转印模板上，从而使温控胶5溶解粘附微发光二极管13。\n\n[0037]本发明中冷却装置可采用如图5所示的冷却装置，其包括可装载冷却介质的金属容器22，金属容器22的截面为矩形，金属容器22构成转印平台6，在与加热装置相对的一面形成冷却面，金属容器22中装载有冷却介质，金属容器22的内腔通过第一电磁阀23与一灌有冷却介质的储存罐24连通，金属容器22还设有一个排气口25，排气口25上设置有第二电磁阀27，当粘附有微发光二极管的转印模板到达位于转移平台6冷却面上的接收衬底12上时，接收衬底12受冷却面降温，使温度通过微发光二极管传导到温控胶3上，温控胶3黏度降低，使微发光二极管13从转印模板上剥离，实现转印，第一电磁阀23以及第二电磁阀27均匀电源8连接。\n\n[0038]本发明中，冷却介质为液氮或干冰。\n\n[0039]本发明还可以设置一PLC(可编程逻辑)控制控制加热装置9、冷却装置10、转移机构7等部件的运作。\n\n[0040]虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。', '技术领域\n\n[0001]本发明涉及一种微发光二极管显示技术领域，特别是一种微发光二极管的转印装置。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED，μLED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，μLED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但μLED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]微转印(Micro Transfer Printing)技术是目前制备μLED显示装置的主流方法，具体制备过程为：首先在蓝宝石类基板生长出微发光二极管，然后通过激光剥离技术(Laser lift-off，LLO)将微发光二极管裸芯片(bare chip)从蓝宝石类基板上分离开，随后使用一个图案化的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)传送头将微发光二极管裸芯片从蓝宝石类基板吸附起来，并将PDMS传送头与接收基板进行对位，随后将PDMS传送头所吸附的微发光二极管裸芯片贴附到接收基板上预设的位置，再剥离PDMS传送头，即可完成将微发光二极管裸芯片转移到接收基板上，进而制得μLED显示装置。\n\n[0005]而目前的转印一般采用通电吸附或PDMS的方式粘附进行转印，当使用PDMS方式进行剥离时存在较难控制剥离效果；当使用通电吸附时则需要对每个吸附头进行导通，不仅复杂而且剥离效果欠佳；目前还有一种通过温度控制来进行微发光二极管转印的技术，其原理是通过低温剥离型胶水，其转印的过程分为吸附-转移-降温最终完成转印，上述的两种转印方式不仅结构复杂，而且效率低。\n\n发明内容\n\n[0006]为克服现有技术的不足，本发明提供一种转印模板及微发光二极管的转印装置，不仅结构简单而且转印效率高。\n\n[0007]本发明提供了一种转印模板，包括转移衬底，所述转移衬底的一侧表面上均匀阵列有凸起，在凸起的表面上以及凸起之间的间隙内覆盖有随温度变化改变胶体黏度的温控胶。\n\n[0008]进一步地，所述凸起的形状为矩形。\n\n[0009]进一步地，所述凸起之间的间隙的距离相等。\n\n[0010]本发明还提供了一种微发光二极管的转印装置，包括机架，在机架上设有待转移平台以及与待转移平台相邻的转移平台，在机架上方设有可从待转移平台移动至转移平台并且可上下移动的转移机构，转移机构上设有所述的转印模板，所述凸起与待转移平台以及转移平台相对设置，在转移机构上设有为转印模板加热的加热装置，加热装置的加热面朝下，转印模板通过紧固件固定在加热装置的加热面上，在转移平台内设有为转印模板降温的冷却装置，转移平台的冷却面与加热面相对，在机架上设有电源，电源分别为加热装置、冷却装置以及转移机构供电。\n\n[0011]进一步地，所述凸起的形状为矩形。\n\n[0012]进一步地，所述凸起之间的间隙的距离相等。\n\n[0013]进一步地，所述转移机构包括设于机架上位于待转移平台以及转移平台上方处的导轨、驱动加热装置以及转印模板水平移动的第一传动机构以及设于驱动加热装置以及转印模板上下移动的第二传动机构，第二传动机构与导轨15的滑块连接固定。\n\n[0014]进一步地，所述第一传动机构包括设置在导轨两端的转轮，转轮的轴向与导轨垂直，在其中一个转轮上设有驱动电机，两个转轮上套有传动带，第二传动机构通过固定块与传动带连接。\n\n[0015]进一步地，所述第二传动机构为气缸，气缸的活塞杆的轴线与导轨垂直，加热装置设置在气缸的活塞杆下端。\n\n[0016]本发明与现有技术相比，通过在转移衬底上设置可根据温度变化改变胶体黏度的温控胶以及与之相适配的转印装置，实现通过温度调节进行微发光二极管的转印，不仅结构简单，而且转印效率高。\n\n附图说明\n\n[0017]图1是本发明的转印模板的结构示意图；\n\n[0018]图2是本发明的转印模版的内部结构示意图；\n\n[0019]图3是本发明的微发光二极管的转印装置的结构示意图；\n\n[0020]图4是本发明加热装置的结构示意图；\n\n[0021]图5是本发明冷却装置的结构示意图。\n\n具体实施方式\n\n[0022]下面结合附图和实施例对本发明作进一步详细说明。\n\n[0023]如图1和图2所示，本发明的转印模板14包括一板状的转移衬底1，在转移衬底1的一侧表面上均匀阵列有凸起2，在凸起2的表面上以及凸起2之间的间隙内覆盖有随温度变化改变胶体黏度的温控胶3，温控胶3可以为低温剥离型温控胶，在温度为20-60℃之间时，胶体失去黏度，可以进行剥离。\n\n[0024]具体地，所述凸起2的形状为矩形，其表面尺寸与供给衬底11上的微发光二极管的尺寸相适配；所述凸起2之间的间隙的距离相等，具体为凸起2之间的间隙距离与供给衬底11上两个微发光二极管之间的间隙距离相等，从而实现吸附。\n\n[0025]本发明中转移衬底1为柔性材料制成，如PDMS(polydimethylsiloxane聚二甲基硅氧烷)、PI(Polyimide聚酰亚胺)或PET(Polyethylene terephthalate聚对苯二甲酸乙二醇酯)材料。\n\n[0026]如图3所示，本发明还公开了一种微发光二极管的转印装置，包括机架4，在机架4上设有待转移平台5以及与待转移平台5相邻的转移平台6，待转移平台5用于承载供给衬底11，转移平台5用于承载接收衬底12，在机架4上方设有可从待转移平台5水平移动至转移平台6的转移机构7，转移机构7上设有转印模板14；转印模板14包括一板状的转移衬底1(图1和图2所示)，在转移衬底1的一侧表面上均匀阵列有凸起2，凸起2与待转移平台5以及转移平台6的表面相对，在凸起2的表面上以及凸起2之间的间隙内覆盖有随温度变化改变胶体黏度的温控胶3，温控胶3可以为低温剥离型温控胶，在温度为20-60℃之间时，胶体失去黏度，可以进行剥离；\n\n[0027]在转移机构7上设有为转印模板14加热的加热装置9，加热装置9的加热面朝下，转印模板14通过紧固件固定在加热装置9的加热面上，在转移平台6内设有为转印模板14降温的冷却装置10，转移平台6的冷却面与加热面相对，在机架4上设有电源8，电源8分别为加热装置9、冷却装置10以及转移机构7供电。\n\n[0028]本发明中转印模板14通过螺栓或卡片(图中未示出)与加热装置9进行固定。\n\n[0029]本发明的微发光二极管的转印装置中，凸起2的形状为矩形，其表面尺寸与供给衬底11上的微发光二极管的尺寸相适配；所述凸起2之间的间隙的距离相等，具体为凸起2之间的间隙距离与供给衬底11上两个微发光二极管之间的间隙距离相等，从而实现吸附。\n\n[0030]如图3所示，所述转移机构7包括设于机架4上位于待转移平台5以及转移平台6上方处的导轨15、驱动加热装置9以及转印模板14水平移动的第一传动机构以及设于驱动加热装置9以及转印模板14上下移动的第二传动机构，第二传动机构与导轨15的滑块连接固定。\n\n[0031]在本发明中，第一传动机构以及第二传动机构可以采用现有技术的传动带传动、齿条传动、丝杆转动等方式实现水平以及上下的移动。\n\n[0032]如图3所示，作为第一传动机构的一种示例，第一传动机构包括设置在导轨两端的转轮16，转轮16的轴向与导轨垂直，在其中一个转轮16上设有驱动电机17，两个转轮16上套有传动带18，第二传动机构通过固定块与传动带18连接，两个转轮16通过L型固定架固定在机架4上，驱动电机17与电源8连接。\n\n[0033]如图3所示，作为第二传动机构的一种示例，本发明中第二传动机构为气缸19，气缸19的轴杆的轴线与导轨15垂直，气缸19的缸体与导轨15的滑块以及传动带18连接固定，气缸19与传动带18的连接具体为与传动带18的上侧或下侧带体连接，加热装置9设置在气缸19的活塞杆下端。\n\n[0034]本发明的工作原理如下：通过第一传动机构将加温装置9以及转印模板14水平移动至待转移平台5上方，开启加热装置9对转印模板14加热，使温控胶3黏度较大，第二传动机构带动加热装置9以及转印模板14下移，转印模板14将供给衬底11上的微发光二极管粘附后，第二传动机构带动加热装置9以及转印模板14上移并通过第一传动机构移动至转移平台6上方，第二传动机构带动加热装置9以及转印模板14下移，此时冷却装置10开启，加热装置9关闭，当转印模板14下移至接收衬底12上后，由于温度下降，使温控胶的黏度降低，从而将微发光二极管13从转印模板14上剥离，完成微发光二极管13的转印。\n\n[0035]根据这一原理，本发明中的加热装置9以及冷却装置10可根据温控胶3的属性进行对调，即若温控胶3为加温剥离型温控胶时，温度在30-50℃之间黏度降低可进行剥离，这时，加热装置9以及冷却装置10的设置位置相反，即转移机构7上设置的为冷却装置10，而转移平台6上设置的为加热装置9。\n\n[0036]本发明中的加热装置可采用现有技术的加热平台，如恒温加热平台；也可以采用如下方式实现，如图4所示，其包括具有加热面的金属板20，在金属板20上设有PTC加热片21，通过电源8对PTC加热片21加电，使PTC加热片21产生热量，通过金属板20传导至转印模板上，从而使温控胶5溶解粘附微发光二极管13。\n\n[0037]本发明中冷却装置可采用如图5所示的冷却装置，其包括可装载冷却介质的金属容器22，金属容器22的截面为矩形，金属容器22构成转印平台6，在与加热装置相对的一面形成冷却面，金属容器22中装载有冷却介质，金属容器22的内腔通过第一电磁阀23与一灌有冷却介质的储存罐24连通，金属容器22还设有一个排气口25，排气口25上设置有第二电磁阀27，当粘附有微发光二极管的转印模板到达位于转移平台6冷却面上的接收衬底12上时，接收衬底12受冷却面降温，使温度通过微发光二极管传导到温控胶3上，温控胶3黏度降低，使微发光二极管13从转印模板上剥离，实现转印，第一电磁阀23以及第二电磁阀27均匀电源8连接。\n\n[0038]本发明中，冷却介质为液氮或干冰。\n\n[0039]本发明还可以设置一PLC(可编程逻辑)控制控制加热装置9、冷却装置10、转移机构7等部件的运作。\n\n[0040]虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。');
INSERT INTO `os_patent_instruction_text` VALUES (10591, 23645, '技术领域\n\n[0001]本发明涉及一种微发光二极管显示技术领域，特别是一种微发光二极管阵列基板及显示面板。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED，μLED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，μLED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但μLED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]目前微发光二极管显示阵列示设计在驱动阵列上方的微发光二极管阵列结构，通过正负电极欲驱动阵列的导通连接，以TFT阵列控制每个像素的微发光二极管的开关和亮度；而微发光二极管阵列由于其微米尺度，当为了达到高像素数目(PPI)显示时，会导致微发光二极管的密度极高，使得其存在散热不通畅的问题，微发光二极管阵列基板的散热问题，会影响显示区域内的显示效果，包括电压电流曲线随温度变化而变化，以及芯片寿命的缩短和微发光二极管的热猝灭，当色阻层以QD(quantum dot，量子点)材料制作而成时，由于该种材料耐高温性能差，微发光二极管阵列的高温问题容易影响QD材料的稳定性。\n\n发明内容\n\n[0005]为克服现有技术的不足，本发明提供一种微发光二极管阵列基板及显示面板，从而提高散热能力。\n\n[0006]本发明提供了一种微发光二极管阵列基板，包括玻璃基板，所述玻璃基板上依次形成有栅极、绝缘层，在绝缘层上形成有半导体层以及像素电极，在半导体层上设有源极、漏极，所述漏极与相邻的像素电极连接，在像素电极上连接有微发光二极管，所述栅极、源极、漏极、像素电极以及与微发光二极管的管脚连接的引线均采用石墨烯导电材料制备得到。\n\n[0007]进一步地，所述微发光二极管的表面上覆盖有散热层。\n\n[0008]进一步地，所述散热层由石墨烯材料制成。\n\n[0009]本发明还提供了一种显示面板，包括所述的微发光二极管阵列基板，在微发光二极管上分别设有色阻层。\n\n[0010]进一步地，所述微发光二极管的与色阻层之间设有散热层。\n\n[0011]进一步地，所述散热层由石墨烯材料制成。\n\n[0012]进一步地，所述微发光二极管为蓝光微发光二极管，所述色阻层包括R色阻层、G色阻层，所述R色阻层与G色阻层分别设于用于作为R子像素和G子像素的微发光二极管上方。\n\n[0013]进一步地，所述色阻层由量子点材料制成。\n\n[0014]进一步地，位于R色阻层处的散热层分别相互连接形成一个整体；位于G色阻层处的散热层分别相互连接形成一个整体。\n\n[0015]本发明与现有技术相比，首先，通过在栅极、源极、漏极、像素电极以及与微发光二极管的管脚连接的引线均采用石墨烯导电材料制备得到，从而使得微发光二极管处的热量能够经被传导至其他区域，从而提高散热能力；其次，在位于微发光二极管上的色阻层与微发光二极管之间设置散热层，进一步提高散热能力。\n\n附图说明\n\n[0016]图1是本发明的第一种微发光二极管阵列基板的结构示意图；\n\n[0017]图2是本发明的第二种微发光二极管阵列基板的结构示意图；\n\n[0018]图3是本发明的一种显示面板的结构示意图；\n\n[0019]图4是本发明的另一种显示面板的结构示意图；\n\n[0020]图5是图4的投影图。\n\n具体实施方式\n\n[0021]下面结合附图和实施例对本发明作进一步详细说明。\n\n[0022]如图1所示，本发明的第一种微发光二极管阵列基板，包括玻璃基板1，在玻璃基板1上采用现有技术依次形成有栅极2、绝缘层3，在绝缘层3上形成有半导体层4以及像素电极5，在半导体层4上设有源极6、漏极7，所述漏极7与相邻的像素电极5连接，在像素电极5上通过转印连接有微发光二极管9，所述栅极2、源极6、漏极7、像素电极5以及与微发光二极管9的管脚连接的引线均采用石墨烯导电材料制备得到。\n\n[0023]通过将电极线以及引线改为石墨烯导电材料，使得能够解决散热问题，将微发光二极管9的热量以及电极线和引线自身的热量得到转移。\n\n[0024]本发明的一种显示面板，包括采用上述的第一种微发光二极管阵列基板，在微发光二极管9上方分别设有色阻层10，色阻层10包括构成像素单元的R(Red)色阻层11、G(Green)色阻层12、以及B(Blue)色阻层13。\n\n[0025]如图2所示，第二种微发光二极管阵列基板包括玻璃基板1，在玻璃基板1上采用现有技术依次形成有栅极2、绝缘层3，在绝缘层3上形成有半导体层4以及像素电极5，在半导体层4上设有源极6、漏极7，所述漏极7与相邻的像素电极5连接，在像素电极5上通过转印连接有微发光二极管9，所述栅极2、源极6、漏极7、像素电极5以及与微发光二极管9的管脚连接的引线均采用石墨烯导电材料制备得到；在微发光二极管9上覆盖有散热层8，散热层8采用石墨烯材料制成，这样能够进一步提高散热能力。\n\n[0026]如图3所示，作为本发明的第二种显示面板，图中处为发光二极管9、散热曾8以及色阻层10外，其余部分与图1或图2中相应部分相同，此处省略。在采用上述第二种微发光二极管阵列基板的散热层8上分别设有色阻层10，色阻层10包括色阻层10包括构成像素单元的R(Red)色阻层11、G(Green)色阻层12、以及B(Blue)色阻层13，色阻层10均通过量子点材料制成，即QD(quantum dot，量子点)材料，量子点又可称为纳米晶，时一种II-VI族或III-V族元素组成的纳米颗粒，量子点的粒径一般介于1-10nm之间。\n\n[0027]由于色阻层10采用的是不耐受高温的材料，因此在色阻层10与微发光二极管9之间设置由石墨烯材料制成的散热层8，能够降低传导至色阻层10的热量，从而避免因散热不良问题影响QD材料的稳定性；所述色阻层10还可以由QD材料作为颜色增强层进行替换。\n\n[0028]如图4所示，作为本发明的第三种显示面板，图中除了为发光二极管9以及散热层8、色阻层10外，其余部分均未示出，其未示出部分的结构与图1中相应的部分相同，因此，此处仅针对改进的地方进行描述。为本发的第三种显示面板，在采用第二种微发光二极管阵列基板的基础上，在微发光二极管9为蓝光微发光二极管时，在用作R子像素和G子像素的微发光二极管9上方设置色阻层10，所述色阻层10包括R色阻层11、G色阻层12，由于微发光二极管9已经为蓝光微发光二极管，因此用作B子像素的微发光二极管9上方不需要再设置色阻层，减少了材料，在R色阻层11与位于相应位置处的微发光二极管9之间设有以及G色阻层12与位于相应位置处的微发光二极管9之间分别设有散热层8，散热层8采用石墨烯材料制成，色阻层10采用量子点材料制成，色阻层10为灰色。\n\n[0029]当然，第三种显示面板中微发光二极管的颜色仅为一种示例，不仅限于此，任何常规用作显示的微发光二极管的颜色均可作为本发明的一种延伸，例如，微发光二极管的颜色为红光时，则相应的作为R子像素的微发光二极管不设置色阻层，而在作为B子像素的微发光二极管上设置B色阻层，作为G子像素的微发光二极管上设置G色阻层；若采用绿光的微发光二极管时的设置方式类似，不再赘述。\n\n[0030]如图5所示，位于R色阻层11处的散热层8分别相互连接形成一个整体，使该处的散热层8的面积增加，从而提高散热效果；位于G色阻层12处的散热层8分别相互连接形成一个整体，使该处的散热层8的面积也增加，从而提高散热效果。\n\n[0031]本发明中色阻层10与散热层8可以为物理接触，即直接相互叠合在一起，或为不接触，通过设置散热层，防止微发光二极管的高温影响上层色阻层的性质。色阻层10采用灰色石墨烯材。\n\n[0032]本发明的显示面板，取消了原有的CF基板，直接在微发光二极管上通过打印的方式将色阻层直接印刷在微发光二极管上，无须再通过复杂的CF基板做做工艺制作CF基板，节省材料以及成本。\n\n[0033]虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。', '技术领域\n\n[0001]本发明涉及一种微发光二极管显示技术领域，特别是一种微发光二极管阵列基板及显示面板。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED，μLED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，μLED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但μLED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]目前微发光二极管显示阵列示设计在驱动阵列上方的微发光二极管阵列结构，通过正负电极欲驱动阵列的导通连接，以TFT阵列控制每个像素的微发光二极管的开关和亮度；而微发光二极管阵列由于其微米尺度，当为了达到高像素数目(PPI)显示时，会导致微发光二极管的密度极高，使得其存在散热不通畅的问题，微发光二极管阵列基板的散热问题，会影响显示区域内的显示效果，包括电压电流曲线随温度变化而变化，以及芯片寿命的缩短和微发光二极管的热猝灭，当色阻层以QD(quantum dot，量子点)材料制作而成时，由于该种材料耐高温性能差，微发光二极管阵列的高温问题容易影响QD材料的稳定性。\n\n发明内容\n\n[0005]为克服现有技术的不足，本发明提供一种微发光二极管阵列基板及显示面板，从而提高散热能力。\n\n[0006]本发明提供了一种微发光二极管阵列基板，包括玻璃基板，所述玻璃基板上依次形成有栅极、绝缘层，在绝缘层上形成有半导体层以及像素电极，在半导体层上设有源极、漏极，所述漏极与相邻的像素电极连接，在像素电极上连接有微发光二极管，所述栅极、源极、漏极、像素电极以及与微发光二极管的管脚连接的引线均采用石墨烯导电材料制备得到。\n\n[0007]进一步地，所述微发光二极管的表面上覆盖有散热层。\n\n[0008]进一步地，所述散热层由石墨烯材料制成。\n\n[0009]本发明还提供了一种显示面板，包括所述的微发光二极管阵列基板，在微发光二极管上分别设有色阻层。\n\n[0010]进一步地，所述微发光二极管的与色阻层之间设有散热层。\n\n[0011]进一步地，所述散热层由石墨烯材料制成。\n\n[0012]进一步地，所述微发光二极管为蓝光微发光二极管，所述色阻层包括R色阻层、G色阻层，所述R色阻层与G色阻层分别设于用于作为R子像素和G子像素的微发光二极管上方。\n\n[0013]进一步地，所述色阻层由量子点材料制成。\n\n[0014]进一步地，位于R色阻层处的散热层分别相互连接形成一个整体；位于G色阻层处的散热层分别相互连接形成一个整体。\n\n[0015]本发明与现有技术相比，首先，通过在栅极、源极、漏极、像素电极以及与微发光二极管的管脚连接的引线均采用石墨烯导电材料制备得到，从而使得微发光二极管处的热量能够经被传导至其他区域，从而提高散热能力；其次，在位于微发光二极管上的色阻层与微发光二极管之间设置散热层，进一步提高散热能力。\n\n附图说明\n\n[0016]图1是本发明的第一种微发光二极管阵列基板的结构示意图；\n\n[0017]图2是本发明的第二种微发光二极管阵列基板的结构示意图；\n\n[0018]图3是本发明的一种显示面板的结构示意图；\n\n[0019]图4是本发明的另一种显示面板的结构示意图；\n\n[0020]图5是图4的投影图。\n\n具体实施方式\n\n[0021]下面结合附图和实施例对本发明作进一步详细说明。\n\n[0022]如图1所示，本发明的第一种微发光二极管阵列基板，包括玻璃基板1，在玻璃基板1上采用现有技术依次形成有栅极2、绝缘层3，在绝缘层3上形成有半导体层4以及像素电极5，在半导体层4上设有源极6、漏极7，所述漏极7与相邻的像素电极5连接，在像素电极5上通过转印连接有微发光二极管9，所述栅极2、源极6、漏极7、像素电极5以及与微发光二极管9的管脚连接的引线均采用石墨烯导电材料制备得到。\n\n[0023]通过将电极线以及引线改为石墨烯导电材料，使得能够解决散热问题，将微发光二极管9的热量以及电极线和引线自身的热量得到转移。\n\n[0024]本发明的一种显示面板，包括采用上述的第一种微发光二极管阵列基板，在微发光二极管9上方分别设有色阻层10，色阻层10包括构成像素单元的R(Red)色阻层11、G(Green)色阻层12、以及B(Blue)色阻层13。\n\n[0025]如图2所示，第二种微发光二极管阵列基板包括玻璃基板1，在玻璃基板1上采用现有技术依次形成有栅极2、绝缘层3，在绝缘层3上形成有半导体层4以及像素电极5，在半导体层4上设有源极6、漏极7，所述漏极7与相邻的像素电极5连接，在像素电极5上通过转印连接有微发光二极管9，所述栅极2、源极6、漏极7、像素电极5以及与微发光二极管9的管脚连接的引线均采用石墨烯导电材料制备得到；在微发光二极管9上覆盖有散热层8，散热层8采用石墨烯材料制成，这样能够进一步提高散热能力。\n\n[0026]如图3所示，作为本发明的第二种显示面板，图中处为发光二极管9、散热曾8以及色阻层10外，其余部分与图1或图2中相应部分相同，此处省略。在采用上述第二种微发光二极管阵列基板的散热层8上分别设有色阻层10，色阻层10包括色阻层10包括构成像素单元的R(Red)色阻层11、G(Green)色阻层12、以及B(Blue)色阻层13，色阻层10均通过量子点材料制成，即QD(quantum dot，量子点)材料，量子点又可称为纳米晶，时一种II-VI族或III-V族元素组成的纳米颗粒，量子点的粒径一般介于1-10nm之间。\n\n[0027]由于色阻层10采用的是不耐受高温的材料，因此在色阻层10与微发光二极管9之间设置由石墨烯材料制成的散热层8，能够降低传导至色阻层10的热量，从而避免因散热不良问题影响QD材料的稳定性；所述色阻层10还可以由QD材料作为颜色增强层进行替换。\n\n[0028]如图4所示，作为本发明的第三种显示面板，图中除了为发光二极管9以及散热层8、色阻层10外，其余部分均未示出，其未示出部分的结构与图1中相应的部分相同，因此，此处仅针对改进的地方进行描述。为本发的第三种显示面板，在采用第二种微发光二极管阵列基板的基础上，在微发光二极管9为蓝光微发光二极管时，在用作R子像素和G子像素的微发光二极管9上方设置色阻层10，所述色阻层10包括R色阻层11、G色阻层12，由于微发光二极管9已经为蓝光微发光二极管，因此用作B子像素的微发光二极管9上方不需要再设置色阻层，减少了材料，在R色阻层11与位于相应位置处的微发光二极管9之间设有以及G色阻层12与位于相应位置处的微发光二极管9之间分别设有散热层8，散热层8采用石墨烯材料制成，色阻层10采用量子点材料制成，色阻层10为灰色。\n\n[0029]当然，第三种显示面板中微发光二极管的颜色仅为一种示例，不仅限于此，任何常规用作显示的微发光二极管的颜色均可作为本发明的一种延伸，例如，微发光二极管的颜色为红光时，则相应的作为R子像素的微发光二极管不设置色阻层，而在作为B子像素的微发光二极管上设置B色阻层，作为G子像素的微发光二极管上设置G色阻层；若采用绿光的微发光二极管时的设置方式类似，不再赘述。\n\n[0030]如图5所示，位于R色阻层11处的散热层8分别相互连接形成一个整体，使该处的散热层8的面积增加，从而提高散热效果；位于G色阻层12处的散热层8分别相互连接形成一个整体，使该处的散热层8的面积也增加，从而提高散热效果。\n\n[0031]本发明中色阻层10与散热层8可以为物理接触，即直接相互叠合在一起，或为不接触，通过设置散热层，防止微发光二极管的高温影响上层色阻层的性质。色阻层10采用灰色石墨烯材。\n\n[0032]本发明的显示面板，取消了原有的CF基板，直接在微发光二极管上通过打印的方式将色阻层直接印刷在微发光二极管上，无须再通过复杂的CF基板做做工艺制作CF基板，节省材料以及成本。\n\n[0033]虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。');
INSERT INTO `os_patent_instruction_text` VALUES (10592, 23646, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管显示面板及其制作方法。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但Micro LED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]在微发光二极管显示面板的制作过程中，微发光二极管必须先在原始基板(如蓝宝石类基板)上通过分子束外延的方法生长出来，而做成显示面板，还必须要把微发光二极管器件原始基板上转移到用于形成显示面板的接收基板上排成显示阵列，具体为：先原始基板上形成微发光二极管，随后通过激光剥离技术(Laser lift-off，LLO)等方法将微发光二极管从原始基板上剥离开，并使用一个采用诸如聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)等材料制作的转印头，如将微发光二极管从原始基板上吸附到接收基板上预设的位置。\n\n[0005]目前，微发光二极管转印到接收基板上后，需要与接收基板上预安装的邦定(Bonding)材料进行粘合邦定，涉及邦定材料固相-液相-固相转化，邦定过程复杂，邦定难度大，可靠性低。\n\n发明内容\n\n[0006]本发明的目的在于提供一种微发光二极管显示面板，能够降低微发光二极管的电极邦定难度，提升微发光二极管的电极邦定的可靠性。\n\n[0007]本发明的目的还在于提供一种微发光二极管显示面板的制作方法，能够降低微发光二极管的电极邦定难度，提升微发光二极管的电极邦定的可靠性。\n\n[0008]为实现上述目的，本发明提供了一种微发光二极管显示面板，包括：衬底基板、设于所述衬底基板上的像素定义层、形成于所述像素定义层中的像素凹槽、设于所述像素凹槽内的树脂粘合层、设于所述像素凹槽内并嵌入所述树脂粘合层中的微发光二极管、以及分别位于像素凹槽两侧的像素定义层上的第一电极触点和第二电极触点；\n\n[0009]所述微发光二极管包括：连接电极、设于所述连接电极的上方并与所述连接电极接触的LED半导体层、设于所述LED半导体层上方并与所述LED半导体层接触的第一电极、设于所述LED半导体层上方并与所述连接电极接触的第二电极、以及包围所述LED半导体层的绝缘保护层；\n\n[0010]所述连接电极与所述第二电极接触的部分以及所述LED半导体层的上表面均暴露于所述树脂粘合层外，所述第一电极和第二电极分别与所述第一电极触点和第二电极触点接触。\n\n[0011]还包括：设于所述衬底基板与像素定义层之间的TFT层；\n\n[0012]所述TFT层包括：设于所述衬底基板上的有源层、覆盖所述有源层与所述衬底基板的栅极绝缘层、设于所述有源层上方的栅极绝缘层上的栅极、覆盖所述栅极以及栅极绝缘层的层间绝缘层、以及设于所述层间绝缘层上的与所述有源层的两端接触的源极和漏极；所述第一电极触点还与所述源极接触。\n\n[0013]所述树脂粘合层的材料为PMMA。\n\n[0014]本发明还提供一种微发光二极管显示面板的制作方法，包括如下步骤：\n\n[0015]步骤1、提供一原始基板，在所述原始基板上依次形成LED半导体层、覆盖所述LED半导体层和原始基板的第一绝缘层、以及设于所述第一绝缘层上并与所述LED半导体层和原始基板接触的连接电极；\n\n[0016]步骤2、提供一转运基板，将所述转运基板表面与连接电极粘合，剥离所述原始基板，使得所有的LED半导体层、第一绝缘层和连接电极均转移到转运基板上，暴露出所述LED半导体层、第一绝缘层、以及连接电极与原始基板接触的部分；\n\n[0017]步骤3、在所述暴露出的LED半导体层、第一绝缘层、以及连接电极上形成第二绝缘层，所述第二绝缘层上形成有第一电极连接孔和第二电极连接孔，所述第一电极连接孔和第二电极连接孔分别暴露出所述LED半导体层的一部分和连接电极的一部分，得到微发光二极管的半成品；\n\n[0018]步骤4、提供一转印头和一接收基板，所述接收基板包括：衬底基板、设于所述衬底基板上的像素定义层、形成于所述像素定义层中的像素凹槽、设于所述像素凹槽内的树脂粘合层、以及分别位于像素凹槽两侧的像素定义层上的第一电极触点和第二电极触点；\n\n[0019]步骤5、通过所述转印头将转运基板上的微发光二极管的半成品转印到接收基板上的像素凹槽内，使得所述微发光二极管的半成品压入并固定在所述树脂粘合层中，且所述连接电极被第二电极连接孔暴露出的部分以及所述LED半导体层的上表面均暴露于所述树脂粘合层外；\n\n[0020]步骤6、在所述微发光二极管的半成品上形成第一电极和第二电极，所述第一电极与所述LED半导体层和第一电极触点接触，所述第二电极与所述连接电极和第二电极触点接触。\n\n[0021]所述步骤1具体包括：\n\n[0022]步骤11、提供一原始基板，在所述原始基板上的形成LED半导体薄膜，在所述LED半导体薄膜上形成图案化的第一光阻层；\n\n[0023]步骤12、以所述第一光阻层为遮挡，对所述LED半导体薄膜进行刻蚀，形成LED半导体层；\n\n[0024]步骤13、在所述LED半导体层和原始基板上覆盖第一绝缘层，在所述第一绝缘层上形成图案化的第二光阻层；\n\n[0025]步骤14、以第二光阻层为遮挡，对所述第一绝缘层进行刻蚀，形成贯穿所述第一绝缘层的第一通孔和第二通孔，所述第一通孔和第二通孔分别暴露出所述LED半导体层的一部分以及原始基板的一部分；\n\n[0026]步骤15、在所述第一绝缘层、LED半导体层、及原始基板上形成第一金属薄膜，在所述第一金属薄膜上形成图案化的第三光阻层；\n\n[0027]步骤16、以第三光阻层为遮挡，对所述第一金属薄膜进行刻蚀，形成连接电极，所述连接电极分别通过第一通孔和第二通孔与LED半导体层和原始基板接触。\n\n[0028]所述步骤2中的转运基板为表面设有粘合层的硬质基板；所述步骤2中通过激光剥离工艺剥离原始基板。\n\n[0029]所述步骤3具体包括：\n\n[0030]步骤31、在所述LED半导体层、第一绝缘层、及连接电极上形成第二绝缘层，在所述第二绝缘层上形成图案化的第四光阻层；\n\n[0031]步骤32、以所述第四光阻层为遮挡，对所述第二绝缘层进行刻蚀，形成贯穿所述第二绝缘层的第一电极连接孔和第二电极连接孔，所述第一电极连接孔和第二电极连接孔分别暴露出所述LED半导体层的一部分和连接电极的一部分。\n\n[0032]所述步骤4中提供的接收基板还包括：位于所述衬底基板和像素定义层之间的TFT层；\n\n[0033]所述TFT层包括：设于所述衬底基板上的有源层、覆盖所述有源层与所述衬底基板的栅极绝缘层、设于所述有源层上方的栅极绝缘层上的栅极、覆盖所述栅极以及栅极绝缘层的层间绝缘层、以及设于所述层间绝缘层上的与所述有源层的两端接触的源极和漏极；所述第二电极触点还与所述源极接触。\n\n[0034]所述步骤6具体包括：\n\n[0035]步骤61、在所述微发光二极管的半成品、像素定义层、第一电极触点、第二电极触点、以及树脂粘合层上形成导电薄膜；\n\n[0036]步骤62、在所述导电薄膜上形成图案化的第五光阻层；\n\n[0037]步骤63、以所述第五光阻层为遮挡对所述导电薄膜进行刻蚀，形成第一电极和第二电极。\n\n[0038]所述树脂粘合层的材料为PMMA。\n\n[0039]本发明的有益效果：本发明提供一种微发光二极管显示面板，该微发光二极管显示面板通过在像素凹槽内填充树脂粘合层，并将微发光二极管压入并固定到树脂粘合层中，同时通过连接电极将微发光二极管的底部的电极引导到微发光二极管的顶部，使得微发光二极管两个电极都处于顶部，方便所述微发光二极管的电极与电极触点的连接，能够降低微发光二极管的电极邦定难度，提升微发光二极管的电极邦定的可靠性。本发明还提供一种微发光二极管显示面板的制作方法，能够降低微发光二极管的电极邦定难度，提升微发光二极管的电极邦定的可靠性。\n\n附图说明\n\n[0040]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0041]附图中，\n\n[0042]图1至图8为本发明的微发光二极管显示面板的制作方法的步骤1的示意图；\n\n[0043]图9为本发明的微发光二极管显示面板的制作方法的步骤2的示意图；\n\n[0044]图10至图11为本发明的微发光二极管显示面板的制作方法的步骤3的示意图；\n\n[0045]图12至图13为本发明的微发光二极管显示面板的制作方法的步骤4和步骤5的示意图；\n\n[0046]图14为本发明的微发光二极管显示面板的制作方法的步骤61的示意图；\n\n[0047]图15为本发明的微发光二极管显示面板的制作方法的步骤62的示意图；\n\n[0048]图16为本发明的微发光二极管显示面板的制作方法的步骤63的示意图暨本发明的微发光二极管显示面板的结构示意图；\n\n[0049]图17为本发明的微发光二极管显示面板的制作方法的步骤63的俯视示意图；\n\n[0050]图18为本发明的微发光二极管显示面板的制作方法的流程图。\n\n具体实施方式\n\n[0051]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0052]请参阅图16，本发明提供一种微发光二极管显示面板，包括：衬底基板41、设于所述衬底基板41上的像素定义层45、形成于所述像素定义层45中的像素凹槽15、设于所述像素凹槽15内的树脂粘合层13、设于所述像素凹槽15内并嵌入所述树脂粘合层13中的微发光二极管200、以及分别位于像素凹槽15两侧的像素定义层45上的第一电极触点43第二电极触点44；\n\n[0053]所述微发光二极管200包括：连接电极6、设于所述连接电极6的上方并与所述连接电极6接触的LED半导体层2、设于所述LED半导体层2上方并与所述LED半导体层2接触的第一电极71、设于所述LED半导体层2上方并与所述连接电极6接触的第二电极72、以及包围所述LED半导体层2的绝缘保护层14；\n\n[0054]所述连接电极6与所述第二电极72接触的部分以及所述LED半导体层2的上表面均暴露于所述树脂粘合层13外，所述第一电极71和第二电极72分别与所述第一电极触点43和第二电极触点44接触。\n\n[0055]具体地，所述微发光二极管显示面板还包括：设于所述衬底基板41与像素定义层45之间的TFT层42；所述TFT层42包括：设于所述衬底基板41上的有源层421、覆盖所述有源层421与所述衬底基板41的栅极绝缘层422、设于所述有源层421上方的栅极绝缘层422上的栅极423、覆盖所述栅极423以及栅极绝缘层422的层间绝缘层424、以及设于所述层间绝缘层424上的与所述有源层421的两端接触的源极425和漏极426；\n\n[0056]其中，所述第一电极触点43还与所述源极425接触，具体为所述第一电极触点43通过贯穿所述像素定义层45的一过孔与所述源极425接触。\n\n[0057]具体地，所述微发光二极管显示面板还包括：位于所述像素凹槽15的底部的反光金属层16。\n\n[0058]具体地，所述LED半导体层2包括：N+层、P+层、以及与N+层和P+层接触的多量子井层。所述连接电极6的材料可以为镍(Ni)、钼(Mo)、铝(Al)、金(Au)、铂(Pt)、及钛(Ti)等金属中的一种或多种的组合。所述第一电极71和第二电极72均为透明电极，材料为氧化铟锡(ITO)、氧化铟锌(IZO)、或聚乙撑二氧噻吩和聚苯乙烯磺酸的混合物(PEDOT：PSS)，所述绝缘保护层14的材料为氧化硅(SiOx)、氮化硅(SiNx)、或氧化铝(Al2O3)等。\n\n[0059]需要说明的是，所述树脂粘合层13的材料为具有较大胶黏度、可通过紫外(UV)光固化或热固化的材料，优选地，所述树脂粘合层13的材料为聚甲基丙烯酸甲酯(PMMA)。在微发光二极管200转印时，树脂粘合层13可固定微发光二极管200，防止微发光二极管200的位置偏移，同时通过连接电极6将微发光二极管200的底部的电极引导到微发光二极管200的顶部，使得微发光二极管200两个电极都处于顶部，不仅可以方便所述微发光二极管200的电极与电极触点的连接，还能够降低微发光二极管200的电极邦定难度，提升微发光二极管200的电极邦定的可靠性。\n\n[0060]请参阅图18，本发明还提供一种上述微发光二极管显示面板的制作方法，包括如下步骤：\n\n[0061]步骤1、请参阅图1至图8，提供一原始基板1，在所述原始基板1上依次形成LED半导体层2、覆盖所述LED半导体层2和原始基板1的第一绝缘层3、以及设于所述第一绝缘层3上并与所述LED半导体层2和原始基板1接触的连接电极6。\n\n[0062]具体地，所述步骤1具体包括：\n\n[0063]步骤11、请参阅图1，提供一原始基板1，在所述原始基板1上的形成LED半导体薄膜2’，在所述LED半导体薄膜2’上形成图案化的第一光阻层10；\n\n[0064]步骤12、请参阅图2，以所述第一光阻层10为遮挡，对所述LED半导体薄膜2’进行刻蚀，形成LED半导体层2；\n\n[0065]步骤13、请参阅图3和图4，在所述LED半导体层2和原始基板1上覆盖第一绝缘层3，在所述第一绝缘层3上形成图案化的第二光阻层20；\n\n[0066]步骤14、请参阅图5，以第二光阻层20为遮挡，对所述第一绝缘层3进行刻蚀，形成贯穿所述第一绝缘层3的第一通孔4和第二通孔5，所述第一通孔4和第二通孔5分别暴露出所述LED半导体层2的一部分以及原始基板1的一部分；\n\n[0067]步骤15、请参阅图6和图7，在所述第一绝缘层3、LED半导体层2、及原始基板1上形成第一金属薄膜6’，在所述第一金属薄膜6’上形成图案化的第三光阻层30；\n\n[0068]步骤16、请参阅图8，以第三光阻层30为遮挡，对所述第一金属薄膜6’进行刻蚀，形成连接电极6，所述连接电极6分别通过第一通孔4和第二通孔5与LED半导体层2和原始基板1接触。\n\n[0069]具体的，所述原始基板1为蓝宝石基板(Al2O3)、硅基板(Si)、碳化硅基板(SiC)、或氮化镓基板(GaN)等，所述LED半导体层2包括：N+层、P+层、以及与N+层和P+层接触的多量子井层。所述连接电极6的材料可以为镍、钼、铝、金、铂、及钛等金属中的一种或多种的组合。所述第一绝缘层3的材料为氧化硅、氮化硅、或氧化铝等。\n\n[0070]步骤2、请参阅图9，提供一转运基板8，将所述转运基板8表面与连接电极6粘合，剥离所述原始基板1，使得所有的LED半导体层2、第一绝缘层3和连接电极6均转移到转运基板8上，暴露出所述LED半导体层2、第一绝缘层3、以及连接电极6与原始基板1接触的部分。\n\n[0071]具体地，所述步骤2中的转运基板8为表面设有粘合层的硬质基板，通过所述硬质基板表面的粘合层粘合连接电极6，使得连接电极6与转运基板8相连，再通过激光剥离工艺去除原始基板1，使得LED半导体层2、第一绝缘层3和连接电极6转移到转运基板8，且所述LED半导体层2、第一绝缘层3和连接电极6上下倒转，也即所述LED半导体层2、第一绝缘层3及连接电极6和所述原始基板1接触的部分远离所述转运基板8，以暴露出LED半导体层2和连接电极6与原始基板1接触的部分。\n\n[0072]步骤3、请参阅图10和图11，在所述暴露出的LED半导体层2、第一绝缘层3、以及连接电极6上形成第二绝缘层9，所述第二绝缘层9上形成有第一电极连接孔11和第二电极连接孔12，所述第一电极连接孔11和第二电极连接孔12分别暴露出所述LED半导体层2的一部分和连接电极6的一部分，得到微发光二极管的半成品100。\n\n[0073]具体地，所述第二绝缘层9与第一绝缘层3共同构成包围所述LED半导体层2的绝缘保护层14。\n\n[0074]具体地，所述步骤3具体包括：\n\n[0075]步骤31、请参阅图10，在所述LED半导体层2、第一绝缘层3、及连接电极6上形成第二绝缘层9，在所述第二绝缘层9上形成图案化的第四光阻层40；\n\n[0076]步骤32、请参阅图11，以所述第四光阻层40为遮挡，对所述第二绝缘层9进行刻蚀，形成贯穿所述第二绝缘层9的第一电极连接孔11和第二电极连接孔12，所述第一电极连接孔11和第二电极连接孔12分别暴露出所述LED半导体层2的一部分和连接电极6的一部分。\n\n[0077]具体地，所述第二绝缘层9的材料为氧化硅、氮化硅、或氧化铝等。\n\n[0078]步骤4、请参阅图12和图13，提供一转印头300和一接收基板400，所述接收基板400包括：衬底基板41、设于所述衬底基板41上的像素定义层45、形成于所述像素定义层45中的像素凹槽15、设于所述像素凹槽15内的树脂粘合层13、以及分别位于像素凹槽15两侧的像素定义层45上的第一电极触点43和第二电极触点44。\n\n[0079]具体地，所述步骤4中提供的接收基板400还包括：位于所述衬底基板41和像素定义层45之间的TFT层42；\n\n[0080]所述TFT层42包括：设于所述衬底基板41上的有源层421、覆盖所述有源层421与所述衬底基板41的栅极绝缘层422、设于所述有源层421上方的栅极绝缘层422上的栅极423、覆盖所述栅极423以及栅极绝缘层422的层间绝缘层424、以及设于所述层间绝缘层424上的与所述有源层421的两端接触的源极425和漏极426；其中，所述第一电极触点43还与所述源极425接触，具体为所述第一电极触点43通过贯穿所述像素定义层45的一过孔与所述源极425接触。\n\n[0081]步骤5、请参阅图12和图13，通过所述转印头300将转运基板8上的微发光二极管的半成品100转印到接收基板400上的像素凹槽15内，使得所述微发光二极管的半成品100压入并固定在所述树脂粘合层13中，且所述连接电极6被第二电极连接孔12暴露出的部分以及所述LED半导体层2的上表面均暴露于所述树脂粘合层13外。\n\n[0082]需要说明的是，所述树脂粘合层13的材料为具有较大胶黏度、可通过紫外(UV)光固化或热固化的材料，优选地，所述树脂粘合层13的材料为聚甲基丙烯酸甲酯(PMMA)。通过将微发光二极管的半成品100压入树脂粘合层13中，对微发光二极管的半成品100进行固定，能够有效防止后续制得的微发光二极管200的位置偏移。\n\n[0083]步骤6、请参阅图14至图17，在所述微发光二极管的半成品100上形成第一电极71和第二电极72，制得微发光二极管200，所述第一电极71与所述LED半导体层2和第一电极触点43接触，所述第二电极72与所述连接电极6和第二电极触点44接触。\n\n[0084]具体地，所述步骤6具体包括：\n\n[0085]步骤61、请参阅图14，在所述微发光二极管的半成品100、像素定义层45、第一电极触点43、第二电极触点44、以及树脂粘合层13上形成导电薄膜7’；\n\n[0086]步骤62、请参阅图15，在所述导电薄膜7’上形成图案化的第五光阻层50；\n\n[0087]步骤63、请参阅图16和图17，以所述第五光阻层50为遮挡对所述导电薄膜7’进行刻蚀，形成第一电极71和第二电极72。\n\n[0088]具体地，所述第一电极71和第二电极72均为透明电极，材料为ITO、IZO、或PEDOT：PSS。\n\n[0089]需要说明的是，上述微发光二极管显示面板的制作方法，通过连接电极6将微发光二极管200的底部的电极引导到微发光二极管200的顶部，使得微发光二极管200两个电极都处于顶部，不仅可以方便所述微发光二极管200的电极与电极触点的连接，还能够降低微发光二极管200的电极邦定难度，提升微发光二极管200的电极邦定的可靠性。\n\n[0090]综上所述，本发明提供一种微发光二极管显示面板，该微发光二极管显示面板通过在像素凹槽内填充树脂粘合层，并将微发光二极管压入并固定到树脂粘合层中，同时通过连接电极将微发光二极管的底部的电极引导到微发光二极管的顶部，使得微发光二极管两个电极都处于顶部，方便所述微发光二极管的电极与电极触点的连接，能够降低微发光二极管的电极邦定难度，提升微发光二极管的电极邦定的可靠性。本发明还提供一种微发光二极管显示面板的制作方法，能够降低微发光二极管的电极邦定难度，提升微发光二极管的电极邦定的可靠性。\n\n[0091]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管显示面板及其制作方法。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但Micro LED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]在微发光二极管显示面板的制作过程中，微发光二极管必须先在原始基板(如蓝宝石类基板)上通过分子束外延的方法生长出来，而做成显示面板，还必须要把微发光二极管器件原始基板上转移到用于形成显示面板的接收基板上排成显示阵列，具体为：先原始基板上形成微发光二极管，随后通过激光剥离技术(Laser lift-off，LLO)等方法将微发光二极管从原始基板上剥离开，并使用一个采用诸如聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)等材料制作的转印头，如将微发光二极管从原始基板上吸附到接收基板上预设的位置。\n\n[0005]目前，微发光二极管转印到接收基板上后，需要与接收基板上预安装的邦定(Bonding)材料进行粘合邦定，涉及邦定材料固相-液相-固相转化，邦定过程复杂，邦定难度大，可靠性低。\n\n发明内容\n\n[0006]本发明的目的在于提供一种微发光二极管显示面板，能够降低微发光二极管的电极邦定难度，提升微发光二极管的电极邦定的可靠性。\n\n[0007]本发明的目的还在于提供一种微发光二极管显示面板的制作方法，能够降低微发光二极管的电极邦定难度，提升微发光二极管的电极邦定的可靠性。\n\n[0008]为实现上述目的，本发明提供了一种微发光二极管显示面板，包括：衬底基板、设于所述衬底基板上的像素定义层、形成于所述像素定义层中的像素凹槽、设于所述像素凹槽内的树脂粘合层、设于所述像素凹槽内并嵌入所述树脂粘合层中的微发光二极管、以及分别位于像素凹槽两侧的像素定义层上的第一电极触点和第二电极触点；\n\n[0009]所述微发光二极管包括：连接电极、设于所述连接电极的上方并与所述连接电极接触的LED半导体层、设于所述LED半导体层上方并与所述LED半导体层接触的第一电极、设于所述LED半导体层上方并与所述连接电极接触的第二电极、以及包围所述LED半导体层的绝缘保护层；\n\n[0010]所述连接电极与所述第二电极接触的部分以及所述LED半导体层的上表面均暴露于所述树脂粘合层外，所述第一电极和第二电极分别与所述第一电极触点和第二电极触点接触。\n\n[0011]还包括：设于所述衬底基板与像素定义层之间的TFT层；\n\n[0012]所述TFT层包括：设于所述衬底基板上的有源层、覆盖所述有源层与所述衬底基板的栅极绝缘层、设于所述有源层上方的栅极绝缘层上的栅极、覆盖所述栅极以及栅极绝缘层的层间绝缘层、以及设于所述层间绝缘层上的与所述有源层的两端接触的源极和漏极；所述第一电极触点还与所述源极接触。\n\n[0013]所述树脂粘合层的材料为PMMA。\n\n[0014]本发明还提供一种微发光二极管显示面板的制作方法，包括如下步骤：\n\n[0015]步骤1、提供一原始基板，在所述原始基板上依次形成LED半导体层、覆盖所述LED半导体层和原始基板的第一绝缘层、以及设于所述第一绝缘层上并与所述LED半导体层和原始基板接触的连接电极；\n\n[0016]步骤2、提供一转运基板，将所述转运基板表面与连接电极粘合，剥离所述原始基板，使得所有的LED半导体层、第一绝缘层和连接电极均转移到转运基板上，暴露出所述LED半导体层、第一绝缘层、以及连接电极与原始基板接触的部分；\n\n[0017]步骤3、在所述暴露出的LED半导体层、第一绝缘层、以及连接电极上形成第二绝缘层，所述第二绝缘层上形成有第一电极连接孔和第二电极连接孔，所述第一电极连接孔和第二电极连接孔分别暴露出所述LED半导体层的一部分和连接电极的一部分，得到微发光二极管的半成品；\n\n[0018]步骤4、提供一转印头和一接收基板，所述接收基板包括：衬底基板、设于所述衬底基板上的像素定义层、形成于所述像素定义层中的像素凹槽、设于所述像素凹槽内的树脂粘合层、以及分别位于像素凹槽两侧的像素定义层上的第一电极触点和第二电极触点；\n\n[0019]步骤5、通过所述转印头将转运基板上的微发光二极管的半成品转印到接收基板上的像素凹槽内，使得所述微发光二极管的半成品压入并固定在所述树脂粘合层中，且所述连接电极被第二电极连接孔暴露出的部分以及所述LED半导体层的上表面均暴露于所述树脂粘合层外；\n\n[0020]步骤6、在所述微发光二极管的半成品上形成第一电极和第二电极，所述第一电极与所述LED半导体层和第一电极触点接触，所述第二电极与所述连接电极和第二电极触点接触。\n\n[0021]所述步骤1具体包括：\n\n[0022]步骤11、提供一原始基板，在所述原始基板上的形成LED半导体薄膜，在所述LED半导体薄膜上形成图案化的第一光阻层；\n\n[0023]步骤12、以所述第一光阻层为遮挡，对所述LED半导体薄膜进行刻蚀，形成LED半导体层；\n\n[0024]步骤13、在所述LED半导体层和原始基板上覆盖第一绝缘层，在所述第一绝缘层上形成图案化的第二光阻层；\n\n[0025]步骤14、以第二光阻层为遮挡，对所述第一绝缘层进行刻蚀，形成贯穿所述第一绝缘层的第一通孔和第二通孔，所述第一通孔和第二通孔分别暴露出所述LED半导体层的一部分以及原始基板的一部分；\n\n[0026]步骤15、在所述第一绝缘层、LED半导体层、及原始基板上形成第一金属薄膜，在所述第一金属薄膜上形成图案化的第三光阻层；\n\n[0027]步骤16、以第三光阻层为遮挡，对所述第一金属薄膜进行刻蚀，形成连接电极，所述连接电极分别通过第一通孔和第二通孔与LED半导体层和原始基板接触。\n\n[0028]所述步骤2中的转运基板为表面设有粘合层的硬质基板；所述步骤2中通过激光剥离工艺剥离原始基板。\n\n[0029]所述步骤3具体包括：\n\n[0030]步骤31、在所述LED半导体层、第一绝缘层、及连接电极上形成第二绝缘层，在所述第二绝缘层上形成图案化的第四光阻层；\n\n[0031]步骤32、以所述第四光阻层为遮挡，对所述第二绝缘层进行刻蚀，形成贯穿所述第二绝缘层的第一电极连接孔和第二电极连接孔，所述第一电极连接孔和第二电极连接孔分别暴露出所述LED半导体层的一部分和连接电极的一部分。\n\n[0032]所述步骤4中提供的接收基板还包括：位于所述衬底基板和像素定义层之间的TFT层；\n\n[0033]所述TFT层包括：设于所述衬底基板上的有源层、覆盖所述有源层与所述衬底基板的栅极绝缘层、设于所述有源层上方的栅极绝缘层上的栅极、覆盖所述栅极以及栅极绝缘层的层间绝缘层、以及设于所述层间绝缘层上的与所述有源层的两端接触的源极和漏极；所述第二电极触点还与所述源极接触。\n\n[0034]所述步骤6具体包括：\n\n[0035]步骤61、在所述微发光二极管的半成品、像素定义层、第一电极触点、第二电极触点、以及树脂粘合层上形成导电薄膜；\n\n[0036]步骤62、在所述导电薄膜上形成图案化的第五光阻层；\n\n[0037]步骤63、以所述第五光阻层为遮挡对所述导电薄膜进行刻蚀，形成第一电极和第二电极。\n\n[0038]所述树脂粘合层的材料为PMMA。\n\n[0039]本发明的有益效果：本发明提供一种微发光二极管显示面板，该微发光二极管显示面板通过在像素凹槽内填充树脂粘合层，并将微发光二极管压入并固定到树脂粘合层中，同时通过连接电极将微发光二极管的底部的电极引导到微发光二极管的顶部，使得微发光二极管两个电极都处于顶部，方便所述微发光二极管的电极与电极触点的连接，能够降低微发光二极管的电极邦定难度，提升微发光二极管的电极邦定的可靠性。本发明还提供一种微发光二极管显示面板的制作方法，能够降低微发光二极管的电极邦定难度，提升微发光二极管的电极邦定的可靠性。\n\n附图说明\n\n[0040]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0041]附图中，\n\n[0042]图1至图8为本发明的微发光二极管显示面板的制作方法的步骤1的示意图；\n\n[0043]图9为本发明的微发光二极管显示面板的制作方法的步骤2的示意图；\n\n[0044]图10至图11为本发明的微发光二极管显示面板的制作方法的步骤3的示意图；\n\n[0045]图12至图13为本发明的微发光二极管显示面板的制作方法的步骤4和步骤5的示意图；\n\n[0046]图14为本发明的微发光二极管显示面板的制作方法的步骤61的示意图；\n\n[0047]图15为本发明的微发光二极管显示面板的制作方法的步骤62的示意图；\n\n[0048]图16为本发明的微发光二极管显示面板的制作方法的步骤63的示意图暨本发明的微发光二极管显示面板的结构示意图；\n\n[0049]图17为本发明的微发光二极管显示面板的制作方法的步骤63的俯视示意图；\n\n[0050]图18为本发明的微发光二极管显示面板的制作方法的流程图。\n\n具体实施方式\n\n[0051]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0052]请参阅图16，本发明提供一种微发光二极管显示面板，包括：衬底基板41、设于所述衬底基板41上的像素定义层45、形成于所述像素定义层45中的像素凹槽15、设于所述像素凹槽15内的树脂粘合层13、设于所述像素凹槽15内并嵌入所述树脂粘合层13中的微发光二极管200、以及分别位于像素凹槽15两侧的像素定义层45上的第一电极触点43第二电极触点44；\n\n[0053]所述微发光二极管200包括：连接电极6、设于所述连接电极6的上方并与所述连接电极6接触的LED半导体层2、设于所述LED半导体层2上方并与所述LED半导体层2接触的第一电极71、设于所述LED半导体层2上方并与所述连接电极6接触的第二电极72、以及包围所述LED半导体层2的绝缘保护层14；\n\n[0054]所述连接电极6与所述第二电极72接触的部分以及所述LED半导体层2的上表面均暴露于所述树脂粘合层13外，所述第一电极71和第二电极72分别与所述第一电极触点43和第二电极触点44接触。\n\n[0055]具体地，所述微发光二极管显示面板还包括：设于所述衬底基板41与像素定义层45之间的TFT层42；所述TFT层42包括：设于所述衬底基板41上的有源层421、覆盖所述有源层421与所述衬底基板41的栅极绝缘层422、设于所述有源层421上方的栅极绝缘层422上的栅极423、覆盖所述栅极423以及栅极绝缘层422的层间绝缘层424、以及设于所述层间绝缘层424上的与所述有源层421的两端接触的源极425和漏极426；\n\n[0056]其中，所述第一电极触点43还与所述源极425接触，具体为所述第一电极触点43通过贯穿所述像素定义层45的一过孔与所述源极425接触。\n\n[0057]具体地，所述微发光二极管显示面板还包括：位于所述像素凹槽15的底部的反光金属层16。\n\n[0058]具体地，所述LED半导体层2包括：N+层、P+层、以及与N+层和P+层接触的多量子井层。所述连接电极6的材料可以为镍(Ni)、钼(Mo)、铝(Al)、金(Au)、铂(Pt)、及钛(Ti)等金属中的一种或多种的组合。所述第一电极71和第二电极72均为透明电极，材料为氧化铟锡(ITO)、氧化铟锌(IZO)、或聚乙撑二氧噻吩和聚苯乙烯磺酸的混合物(PEDOT：PSS)，所述绝缘保护层14的材料为氧化硅(SiOx)、氮化硅(SiNx)、或氧化铝(Al2O3)等。\n\n[0059]需要说明的是，所述树脂粘合层13的材料为具有较大胶黏度、可通过紫外(UV)光固化或热固化的材料，优选地，所述树脂粘合层13的材料为聚甲基丙烯酸甲酯(PMMA)。在微发光二极管200转印时，树脂粘合层13可固定微发光二极管200，防止微发光二极管200的位置偏移，同时通过连接电极6将微发光二极管200的底部的电极引导到微发光二极管200的顶部，使得微发光二极管200两个电极都处于顶部，不仅可以方便所述微发光二极管200的电极与电极触点的连接，还能够降低微发光二极管200的电极邦定难度，提升微发光二极管200的电极邦定的可靠性。\n\n[0060]请参阅图18，本发明还提供一种上述微发光二极管显示面板的制作方法，包括如下步骤：\n\n[0061]步骤1、请参阅图1至图8，提供一原始基板1，在所述原始基板1上依次形成LED半导体层2、覆盖所述LED半导体层2和原始基板1的第一绝缘层3、以及设于所述第一绝缘层3上并与所述LED半导体层2和原始基板1接触的连接电极6。\n\n[0062]具体地，所述步骤1具体包括：\n\n[0063]步骤11、请参阅图1，提供一原始基板1，在所述原始基板1上的形成LED半导体薄膜2’，在所述LED半导体薄膜2’上形成图案化的第一光阻层10；\n\n[0064]步骤12、请参阅图2，以所述第一光阻层10为遮挡，对所述LED半导体薄膜2’进行刻蚀，形成LED半导体层2；\n\n[0065]步骤13、请参阅图3和图4，在所述LED半导体层2和原始基板1上覆盖第一绝缘层3，在所述第一绝缘层3上形成图案化的第二光阻层20；\n\n[0066]步骤14、请参阅图5，以第二光阻层20为遮挡，对所述第一绝缘层3进行刻蚀，形成贯穿所述第一绝缘层3的第一通孔4和第二通孔5，所述第一通孔4和第二通孔5分别暴露出所述LED半导体层2的一部分以及原始基板1的一部分；\n\n[0067]步骤15、请参阅图6和图7，在所述第一绝缘层3、LED半导体层2、及原始基板1上形成第一金属薄膜6’，在所述第一金属薄膜6’上形成图案化的第三光阻层30；\n\n[0068]步骤16、请参阅图8，以第三光阻层30为遮挡，对所述第一金属薄膜6’进行刻蚀，形成连接电极6，所述连接电极6分别通过第一通孔4和第二通孔5与LED半导体层2和原始基板1接触。\n\n[0069]具体的，所述原始基板1为蓝宝石基板(Al2O3)、硅基板(Si)、碳化硅基板(SiC)、或氮化镓基板(GaN)等，所述LED半导体层2包括：N+层、P+层、以及与N+层和P+层接触的多量子井层。所述连接电极6的材料可以为镍、钼、铝、金、铂、及钛等金属中的一种或多种的组合。所述第一绝缘层3的材料为氧化硅、氮化硅、或氧化铝等。\n\n[0070]步骤2、请参阅图9，提供一转运基板8，将所述转运基板8表面与连接电极6粘合，剥离所述原始基板1，使得所有的LED半导体层2、第一绝缘层3和连接电极6均转移到转运基板8上，暴露出所述LED半导体层2、第一绝缘层3、以及连接电极6与原始基板1接触的部分。\n\n[0071]具体地，所述步骤2中的转运基板8为表面设有粘合层的硬质基板，通过所述硬质基板表面的粘合层粘合连接电极6，使得连接电极6与转运基板8相连，再通过激光剥离工艺去除原始基板1，使得LED半导体层2、第一绝缘层3和连接电极6转移到转运基板8，且所述LED半导体层2、第一绝缘层3和连接电极6上下倒转，也即所述LED半导体层2、第一绝缘层3及连接电极6和所述原始基板1接触的部分远离所述转运基板8，以暴露出LED半导体层2和连接电极6与原始基板1接触的部分。\n\n[0072]步骤3、请参阅图10和图11，在所述暴露出的LED半导体层2、第一绝缘层3、以及连接电极6上形成第二绝缘层9，所述第二绝缘层9上形成有第一电极连接孔11和第二电极连接孔12，所述第一电极连接孔11和第二电极连接孔12分别暴露出所述LED半导体层2的一部分和连接电极6的一部分，得到微发光二极管的半成品100。\n\n[0073]具体地，所述第二绝缘层9与第一绝缘层3共同构成包围所述LED半导体层2的绝缘保护层14。\n\n[0074]具体地，所述步骤3具体包括：\n\n[0075]步骤31、请参阅图10，在所述LED半导体层2、第一绝缘层3、及连接电极6上形成第二绝缘层9，在所述第二绝缘层9上形成图案化的第四光阻层40；\n\n[0076]步骤32、请参阅图11，以所述第四光阻层40为遮挡，对所述第二绝缘层9进行刻蚀，形成贯穿所述第二绝缘层9的第一电极连接孔11和第二电极连接孔12，所述第一电极连接孔11和第二电极连接孔12分别暴露出所述LED半导体层2的一部分和连接电极6的一部分。\n\n[0077]具体地，所述第二绝缘层9的材料为氧化硅、氮化硅、或氧化铝等。\n\n[0078]步骤4、请参阅图12和图13，提供一转印头300和一接收基板400，所述接收基板400包括：衬底基板41、设于所述衬底基板41上的像素定义层45、形成于所述像素定义层45中的像素凹槽15、设于所述像素凹槽15内的树脂粘合层13、以及分别位于像素凹槽15两侧的像素定义层45上的第一电极触点43和第二电极触点44。\n\n[0079]具体地，所述步骤4中提供的接收基板400还包括：位于所述衬底基板41和像素定义层45之间的TFT层42；\n\n[0080]所述TFT层42包括：设于所述衬底基板41上的有源层421、覆盖所述有源层421与所述衬底基板41的栅极绝缘层422、设于所述有源层421上方的栅极绝缘层422上的栅极423、覆盖所述栅极423以及栅极绝缘层422的层间绝缘层424、以及设于所述层间绝缘层424上的与所述有源层421的两端接触的源极425和漏极426；其中，所述第一电极触点43还与所述源极425接触，具体为所述第一电极触点43通过贯穿所述像素定义层45的一过孔与所述源极425接触。\n\n[0081]步骤5、请参阅图12和图13，通过所述转印头300将转运基板8上的微发光二极管的半成品100转印到接收基板400上的像素凹槽15内，使得所述微发光二极管的半成品100压入并固定在所述树脂粘合层13中，且所述连接电极6被第二电极连接孔12暴露出的部分以及所述LED半导体层2的上表面均暴露于所述树脂粘合层13外。\n\n[0082]需要说明的是，所述树脂粘合层13的材料为具有较大胶黏度、可通过紫外(UV)光固化或热固化的材料，优选地，所述树脂粘合层13的材料为聚甲基丙烯酸甲酯(PMMA)。通过将微发光二极管的半成品100压入树脂粘合层13中，对微发光二极管的半成品100进行固定，能够有效防止后续制得的微发光二极管200的位置偏移。\n\n[0083]步骤6、请参阅图14至图17，在所述微发光二极管的半成品100上形成第一电极71和第二电极72，制得微发光二极管200，所述第一电极71与所述LED半导体层2和第一电极触点43接触，所述第二电极72与所述连接电极6和第二电极触点44接触。\n\n[0084]具体地，所述步骤6具体包括：\n\n[0085]步骤61、请参阅图14，在所述微发光二极管的半成品100、像素定义层45、第一电极触点43、第二电极触点44、以及树脂粘合层13上形成导电薄膜7’；\n\n[0086]步骤62、请参阅图15，在所述导电薄膜7’上形成图案化的第五光阻层50；\n\n[0087]步骤63、请参阅图16和图17，以所述第五光阻层50为遮挡对所述导电薄膜7’进行刻蚀，形成第一电极71和第二电极72。\n\n[0088]具体地，所述第一电极71和第二电极72均为透明电极，材料为ITO、IZO、或PEDOT：PSS。\n\n[0089]需要说明的是，上述微发光二极管显示面板的制作方法，通过连接电极6将微发光二极管200的底部的电极引导到微发光二极管200的顶部，使得微发光二极管200两个电极都处于顶部，不仅可以方便所述微发光二极管200的电极与电极触点的连接，还能够降低微发光二极管200的电极邦定难度，提升微发光二极管200的电极邦定的可靠性。\n\n[0090]综上所述，本发明提供一种微发光二极管显示面板，该微发光二极管显示面板通过在像素凹槽内填充树脂粘合层，并将微发光二极管压入并固定到树脂粘合层中，同时通过连接电极将微发光二极管的底部的电极引导到微发光二极管的顶部，使得微发光二极管两个电极都处于顶部，方便所述微发光二极管的电极与电极触点的连接，能够降低微发光二极管的电极邦定难度，提升微发光二极管的电极邦定的可靠性。本发明还提供一种微发光二极管显示面板的制作方法，能够降低微发光二极管的电极邦定难度，提升微发光二极管的电极邦定的可靠性。\n\n[0091]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10593, 23647, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种彩色微发光二极管阵列基板的制作方法。\n\n背景技术\n\n[0002]微发光二极管(Micro LED)是一种尺寸在几微米到几百微米之间的器件，由于其较普通LED的尺寸要小很多，从而使得单一的LED作为像素(Pixel)用于显示成为可能，Micro LED显示器便是一种以高密度的Micro LED阵列作为显示像素阵列来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但Micro LED显示器相比于OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0003]由于晶格匹配的原因，Micro LED器件必须先在供给基板上通过分子束外延的方法生长出来，随后通过激光剥离(Laser lift-off，LLO)技术将微发光二极管裸芯片(barechip)从供给基板上分离开，然后通过微转印(Micro Transfer Print，NTP)技术将其转移到已经预先制备完成电路图案的接受基板上，形成Micro LED阵列，进而做成Micro LED显示面板。其中，微转印的基本原理大致为：使用具有图案化的传送头(Transfer head)，例如具有凸起结构的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)类传送头，通过具有粘性的PDMS传送层(Transfer layer)将Micro LED bare chip从供给基板吸附起来，然后将PDMS传送头与接受基板进行对位，随后将PDMS传送头所吸附的Micro LED bare chip贴附到接受基板预设的位置上，再将PDMS传送头从接受基板上剥离，即可完成Micro LED barechip的转移，形成Micro LED阵列。\n\n[0004]因此，在微转印技术制作Micro LED阵列的过程中，需要使用传送头对Micro LED阵列进行转移，传送头的结构相对复杂，并需要考虑它的可靠性，制造传送头需要额外的成本。在利用传送头拾取Micro LED之前需要产生相位改变，Micro LED用于相位改变的热预算受到限制，通常小于350℃，或者更具体地，小于200℃；否则，Micro LED的性能会劣化。且在Micro LED阵列的制作过程中通常需要两次转移，即，从供给基板到传送头的转移、以及从传送头到接受基板的转移。\n\n[0005]针对利用传送头进行微转印所存在的问题，本领域以已提出一种芯片绑定(ChipBonding)的技术来对Micro LED阵列进行转移，即将提供Micro LED的供给基板直接与接受基板进行对位和键合，省去传送头的中间步骤，但这么做较难实现LED显示阵列的彩色化，因为一个供给基板上生长的Micro LED多数是单一颜色，使得接受基板上所绑定的MicroLED阵列是单色，进而只能进行单色显示，例如蓝色的显示，而无法实现多色Micro LED的排列而进行彩色显示，例如红绿蓝(R/G/B)三色Micro LED的交错排列。另外，供给基板的尺寸目前还是以2-4英寸为主，从而限制了一次转移的Micro LED颗数。\n\n发明内容\n\n[0006]本发明的目的在于提供一种彩色微发光二极管阵列基板的制作方法，将对应不同颜色的供给基板上的微发光二极管均选择性地转移到接受基板上而形成多个不同颜色的单色微发光二极管阵列，从而实现彩色微发光二极管阵列基板的制作。\n\n[0007]为实现上述目的，本发明提供了一种彩色微发光二极管阵列基板的制作方法，所述彩色微发光二极管阵列基板包括接受基板、及设于所述接受基板上的彩色微发光二极管阵列；所述接受基板包括多个分别对应不同颜色的单色像素区域，所述彩色微发光二极管阵列包括多个不同颜色的单色微发光二极管阵列，每个颜色的单色微发光二极管阵列设于对应该颜色的单色像素区域上；\n\n[0008]其中，所述彩色微发光二极管阵列基板上每个颜色的单色微发光二极管阵列的制作方法，均包括如下步骤：\n\n[0009]步骤S1、提供对应于所需颜色的供给基板、及接受基板，该供给基板上设有多个该所需颜色的微发光二极管；对应于所述接受基板的对应该所需颜色的单色像素区域，在该供给基板上划分出待转移区域，将该供给基板的待转移区域上的微发光二极管设为待转移微发光二极管，在每一待转移微发光二极管上形成金属电极；\n\n[0010]所述接受基板的每一单色像素区域上均设有多个驱动电极；\n\n[0011]步骤S2、将所述供给基板与所述接受基板进行对位，将每一待转移微发光二极管上的金属电极对应置于接受基板的对应该所需颜色的单色像素区域上的驱动电极上，使每一待转移微发光二极管上的金属电极与驱动电极对应键合，而使得待转移微发光二极管绑定在所述接受基板的对应该所需颜色的单色像素区域上；\n\n[0012]步骤S3、对供给基板上多个微发光二极管中所有的待转移微发光二极管进行激光照射，从而使得所有的待转移微发光二极管从供给基板上脱落而固定在对应该所需颜色的单色像素区域上，完成该颜色的单色微发光二极管阵列的制作。\n\n[0013]所述步骤S3中，采用大面积激光光源并结合掩膜板对所述多个微发光二极管进行选择性照射，从而只对待转移微发光二极管进行激光照射。\n\n[0014]所述步骤S3中，采用多个定向激光光源对所述多个微发光二极管进行选择性照射，具体通过将所述多个定向激光光源对应所述供给基板上的待转移微发光二极管进行设置，从而只对待转移微发光二极管进行激光照射。\n\n[0015]所述步骤S1中，通过光刻工艺在每一待转移微发光二极管上形成金属电极。\n\n[0016]所述步骤S2中，所述多个驱动电极上设有低熔点焊盘。\n\n[0017]所述步骤S2中，将所述待转移微发光二极管绑定在所述接受基板上的具体过程为：在将待转移微发光二极管置于所述驱动电极上之后，进行加热处理，使得驱动电极上的低熔点焊盘熔化，从而将待转移微发光二极管的金属电极与所述驱动电极键合，从而使得待转移微发光二极管绑定在所述接受基板的对应该所需颜色的单色像素区域上。\n\n[0018]所述彩色微发光二极管阵列基板上不同颜色的单色微发光二极管阵列前后依次制作形成；\n\n[0019]对于在后制作的单色微发光二极管阵列的金属电极的厚度和相应的驱动电极在接受基板上的高度之和，大于在前制作的单色微发光二极管阵列在接受基板上的高度。\n\n[0020]所述步骤S3中从供给基板侧、或从接受基板侧对所述待转移微发光二极管进行激光照射。\n\n[0021]所述接受基板包括三个单色像素区域，该三个单色像素区域分别为红、绿、蓝色像素区域，所述彩色微发光二极管阵列相应包括三个不同颜色的单色微发光二极管阵列，该三个单色微发光二极管阵列分别为红、绿、蓝色微发光二极管阵列。\n\n[0022]所述接受基板为TFT阵列基板。\n\n[0023]本发明的有益效果：本发明提供了一种彩色微发光二极管阵列基板的制作方法，通过在接受基板上制作多个分别为不同颜色的单色微发光二极管阵列而形成彩色微发光二极管阵列，其中对于每一颜色的单色微发光二极管阵列的制作，结合绑定技术与激光脱落(Laser Lift Off)技术，选择性地在供给基板上特定区域的微发光二极管上形成金属电极，从而选择性地将该特定区域的微发光二极管绑定在接受基板上，并选择性的对该特定区域的微发光二极管进行激光照射，从而使该特定区域的微发光二极管经过绑定以及激光退火后与供给基板分离，在接受基板上形成单色微发光二极管阵列，进而实现了接受基板上不同颜色的单色微发光二极管阵列的制作，且制作方法简单易行。\n\n附图说明\n\n[0024]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0025]附图中，\n\n[0026]图1为本发明的彩色微发光二极管阵列基板的制作方法中制作每个单色微发光二极管阵列的流程示意图；\n\n[0027]图2为本发明的彩色微发光二极管阵列基板的制作方法中制作每个单色微发光二极管阵列的步骤S1的示意图；\n\n[0028]图3为本发明的彩色微发光二极管阵列基板的制作方法中制作每个单色微发光二极管阵列的步骤S2的示意图；\n\n[0029]图4为本发明的彩色微发光二极管阵列基板的制作方法中制作每个单色微发光二极管阵列的步骤S3的示意图；\n\n[0030]图5为图4所示的步骤S3中采用大面积激光光源并结合掩膜板对多个微发光二极管进行选择性照射的示意图；\n\n[0031]图6为图4所示的步骤S3中采用多个定向激光光源对多个微发光二极管进行选择性照射的示意图；\n\n[0032]图7为本发明的彩色微发光二极管阵列基板的制作方法的优选实施例的步骤S10的示意图；\n\n[0033]图8为本发明的彩色微发光二极管阵列基板的制作方法的优选实施例的步骤S20的示意图；\n\n[0034]图9为本发明的彩色微发光二极管阵列基板的制作方法的优选实施例的步骤S30的示意图。\n\n具体实施方式\n\n[0035]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0036]本发明提供一种彩色微发光二极管阵列基板的制作方法，所述彩色微发光二极管阵列基板包括接受基板20、及设于所述接受基板20上的彩色微发光二极管阵列；所述接受基板20包括多个分别对应不同颜色的单色像素区域，所述彩色微发光二极管阵列包括多个不同颜色的单色微发光二极管阵列，每个颜色的单色微发光二极管阵列设于对应该颜色的单色像素区域上。\n\n[0037]请参阅图1，其中，所述彩色微发光二极管阵列基板上每个颜色的单色微发光二极管阵列的制作方法，均包括如下步骤：\n\n[0038]步骤S1、如图2所示，提供对应于所需颜色的供给基板10、及接受基板20，该供给基板10上设有多个该所需颜色的微发光二极管41；对应于所述接受基板20的对应该所需颜色的单色像素区域，在该供给基板10上划分出待转移区域，将该供给基板10的待转移区域上的微发光二极管41设为待转移微发光二极管，在每一待转移微发光二极管上形成金属电极51；\n\n[0039]所述接受基板20的每一单色像素区域上均设有多个驱动电极21。\n\n[0040]具体地，所述步骤S1中，通过光刻工艺在每一待转移微发光二极管上形成金属电极51。\n\n[0041]步骤S2、如图3所示，将所述供给基板10与所述接受基板20进行对位，将每一待转移微发光二极管上的金属电极51对应置于接受基板20的对应该所需颜色的单色像素区域上的驱动电极21上，使每一待转移微发光二极管上的金属电极51与驱动电极21对应键合，而使得待转移微发光二极管绑定在所述接受基板20的对应该所需颜色的单色像素区域上。\n\n[0042]具体地，所述步骤S2中，所述多个驱动电极21上设有低熔点焊盘。\n\n[0043]具体地，所述步骤S2中，将所述待转移微发光二极管绑定在所述接受基板20上的具体过程为：在将待转移微发光二极管置于所述驱动电极21上之后，进行加热处理，使得驱动电极21上的低熔点焊盘熔化，从而将待转移微发光二极管的金属电极51与所述驱动电极21键合，从而使得待转移微发光二极管绑定在所述接受基板20的对应该所需颜色的单色像素区域上。\n\n[0044]步骤S3、如图4所示，对供给基板10上多个微发光二极管41中所有的待转移微发光二极管进行激光照射，从而使得所有的待转移微发光二极管从供给基板10上脱落而固定在对应该所需颜色的单色像素区域上，完成该颜色的单色微发光二极管阵列的制作。\n\n[0045]具体地，如图5所示，所述步骤S3中，采用大面积激光光源61并结合掩膜板70对所述多个微发光二极管41进行选择性照射，从而只对待转移微发光二极管进行激光照射。或者，\n\n[0046]如图6所示，所述步骤S3中，采用多个向性好光斑宽度较小的定向激光光源62对所述多个微发光二极管41进行选择性照射，具体通过将所述多个定向激光光源62对应所述供给基板10上的待转移微发光二极管进行设置，从而只对待转移微发光二极管进行激光照射。\n\n[0047]具体地，所述步骤S3中可以从供给基板10侧、也可以从接受基板20侧对所述待转移微发光二极管进行激光照射，这里对此不做限制。\n\n[0048]具体地，本发明的彩色微发光二极管阵列基板的制作方法中，所述彩色微发光二极管阵列基板上不同颜色的单色微发光二极管阵列前后依次制作形成；那么，对于在后制作的单色微发光二极管阵列的金属电极51的厚度和相应的驱动电极21在接受基板20上的高度之和，大于在前制作的单色微发光二极管阵列在接受基板20上的高度，从而防止在前制作单色微发光二极管阵列阻碍在后制作的单色微发光二极管阵列的金属电极51与相应的驱动电极21的键合。\n\n[0049]具体地，所述接受基板20为TFT阵列基板，从而在接受基板20上完成所有不同颜色的单色微发光二极管阵列的制作之后，可进一步用于制作彩色微发光二极管显示器，从而进行彩色显示。\n\n[0050]本发明的彩色微发光二极管阵列基板的制作方法，通过在接受基板20上制作多个分别为不同颜色的单色微发光二极管阵列而形成彩色微发光二极管阵列，其中对于每一颜色的单色微发光二极管阵列的制作，结合绑定技术与激光脱落技术，选择性地在供给基板10上特定区域的微发光二极管41上形成金属电极52，从而选择性地将该特定区域的微发光二极管41绑定在接受基板20上，并选择性的对该特定区域的微发光二极管41进行激光照射，从而使该特定区域的微发光二极管41经过绑定以及激光退火后与供给基板10分离，在接受基板20上形成单色微发光二极管阵列，进而实现了接受基板20上不同颜色的单色微发光二极管阵列的制作，且制作方法简单易行。\n\n[0051]具体地，本发明的彩色微发光二极管阵列基板的制作方法的优选实施例中，所述接受基板20包括三个单色像素区域，该三个单色像素区域分别为红、绿、蓝色像素区域，所述彩色微发光二极管阵列相应包括三个不同颜色的单色微发光二极管阵列，该三个单色微发光二极管阵列分别为红、绿、蓝色微发光二极管阵列。该优选实施例具体包括如下步骤：\n\n[0052]步骤S10、如图7所示，提供对应于所需蓝色的第一供给基板101、及接受基板20，该第一供给基板101上设有多个蓝色微发光二极管411；对应于所述接受基板20的蓝色像素区域，在该第一供给基板101上划分出待转移区域，将该供给基板101的待转移区域上的蓝色微发光二极管411设为待转移蓝色微发光二极管，在每一待转移蓝色微发光二极管上形成第一金属电极511；然后将所述第一供给基板101与接受基板20进行对位，将其每一待转移蓝色微发光二极管上的第一金属电极511对应置于接受基板20的蓝色像素区域上的驱动电极21上，使每一待转移蓝色微发光二极管上的第一金属电极511与驱动电极21对应键合，而使得待转移蓝色微发光二极管绑定在所述接受基板20的蓝色像素区域上，在所述接受基板20上完成蓝色微发光二极管阵列的制作。\n\n[0053]步骤S20、如图8所示，提供对应于所需红色的第二供给基板102，该第二供给基板102上设有多个红色微发光二极管412；对应于所述接受基板20的红色像素区域，在该第二供给基板102上划分出待转移区域，将该供给基板102的待转移区域上的红色微发光二极管412设为待转移红色微发光二极管，在每一待转移红色微发光二极管上形成第二金属电极512；然后将所述第二供给基板102与接受基板20进行对位，将其每一待转移红色微发光二极管上的第二金属电极512对应置于接受基板20的红色像素区域上的驱动电极21上，使每一待转移红色微发光二极管上的第二金属电极512与驱动电极21对应键合，而使得待转移红色微发光二极管绑定在所述接受基板20的红色像素区域上，在所述接受基板20上完成红色微发光二极管阵列的制作。\n\n[0054]步骤S30、如图9所示，提供对应于所需绿色的第三供给基板103，该第三供给基板103上设有多个绿色微发光二极管413；对应于所述接受基板20的绿色像素区域，在该第三供给基板103上划分出待转移区域，将该供给基板103的待转移区域上的绿色微发光二极管413设为待转移绿色微发光二极管，在每一待转移绿色微发光二极管上形成第三金属电极513；然后将所述第三供给基板103与接受基板20进行对位，将其每一待转移绿色微发光二极管上的第三金属电极513对应置于接受基板20的绿色像素区域上的驱动电极21上，使每一待转移绿色微发光二极管上的第三金属电极513与驱动电极21对应键合，而使得待转移绿色微发光二极管绑定在所述接受基板20的绿色像素区域上，在所述接受基板20上完成绿色微发光二极管阵列的制作，从而得到彩色微发光二极管阵列基板。\n\n[0055]综上所述，本发明提供了一种彩色微发光二极管阵列基板的制作方法，通过在接受基板上制作多个分别为不同颜色的单色微发光二极管阵列而形成彩色微发光二极管阵列，其中对于每一颜色的单色微发光二极管阵列的制作，结合绑定技术与激光脱落技术，选择性地在供给基板上特定区域的微发光二极管上形成金属电极，从而选择性地将该特定区域的微发光二极管绑定在接受基板上，并选择性的对该特定区域的微发光二极管进行激光照射，从而使该特定区域的微发光二极管经过绑定以及激光退火后与供给基板分离，在接受基板上形成单色微发光二极管阵列，进而实现了接受基板上不同颜色的单色微发光二极管阵列的制作，且制作方法简单易行。\n\n[0056]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种彩色微发光二极管阵列基板的制作方法。\n\n背景技术\n\n[0002]微发光二极管(Micro LED)是一种尺寸在几微米到几百微米之间的器件，由于其较普通LED的尺寸要小很多，从而使得单一的LED作为像素(Pixel)用于显示成为可能，Micro LED显示器便是一种以高密度的Micro LED阵列作为显示像素阵列来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但Micro LED显示器相比于OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0003]由于晶格匹配的原因，Micro LED器件必须先在供给基板上通过分子束外延的方法生长出来，随后通过激光剥离(Laser lift-off，LLO)技术将微发光二极管裸芯片(barechip)从供给基板上分离开，然后通过微转印(Micro Transfer Print，NTP)技术将其转移到已经预先制备完成电路图案的接受基板上，形成Micro LED阵列，进而做成Micro LED显示面板。其中，微转印的基本原理大致为：使用具有图案化的传送头(Transfer head)，例如具有凸起结构的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)类传送头，通过具有粘性的PDMS传送层(Transfer layer)将Micro LED bare chip从供给基板吸附起来，然后将PDMS传送头与接受基板进行对位，随后将PDMS传送头所吸附的Micro LED bare chip贴附到接受基板预设的位置上，再将PDMS传送头从接受基板上剥离，即可完成Micro LED barechip的转移，形成Micro LED阵列。\n\n[0004]因此，在微转印技术制作Micro LED阵列的过程中，需要使用传送头对Micro LED阵列进行转移，传送头的结构相对复杂，并需要考虑它的可靠性，制造传送头需要额外的成本。在利用传送头拾取Micro LED之前需要产生相位改变，Micro LED用于相位改变的热预算受到限制，通常小于350℃，或者更具体地，小于200℃；否则，Micro LED的性能会劣化。且在Micro LED阵列的制作过程中通常需要两次转移，即，从供给基板到传送头的转移、以及从传送头到接受基板的转移。\n\n[0005]针对利用传送头进行微转印所存在的问题，本领域以已提出一种芯片绑定(ChipBonding)的技术来对Micro LED阵列进行转移，即将提供Micro LED的供给基板直接与接受基板进行对位和键合，省去传送头的中间步骤，但这么做较难实现LED显示阵列的彩色化，因为一个供给基板上生长的Micro LED多数是单一颜色，使得接受基板上所绑定的MicroLED阵列是单色，进而只能进行单色显示，例如蓝色的显示，而无法实现多色Micro LED的排列而进行彩色显示，例如红绿蓝(R/G/B)三色Micro LED的交错排列。另外，供给基板的尺寸目前还是以2-4英寸为主，从而限制了一次转移的Micro LED颗数。\n\n发明内容\n\n[0006]本发明的目的在于提供一种彩色微发光二极管阵列基板的制作方法，将对应不同颜色的供给基板上的微发光二极管均选择性地转移到接受基板上而形成多个不同颜色的单色微发光二极管阵列，从而实现彩色微发光二极管阵列基板的制作。\n\n[0007]为实现上述目的，本发明提供了一种彩色微发光二极管阵列基板的制作方法，所述彩色微发光二极管阵列基板包括接受基板、及设于所述接受基板上的彩色微发光二极管阵列；所述接受基板包括多个分别对应不同颜色的单色像素区域，所述彩色微发光二极管阵列包括多个不同颜色的单色微发光二极管阵列，每个颜色的单色微发光二极管阵列设于对应该颜色的单色像素区域上；\n\n[0008]其中，所述彩色微发光二极管阵列基板上每个颜色的单色微发光二极管阵列的制作方法，均包括如下步骤：\n\n[0009]步骤S1、提供对应于所需颜色的供给基板、及接受基板，该供给基板上设有多个该所需颜色的微发光二极管；对应于所述接受基板的对应该所需颜色的单色像素区域，在该供给基板上划分出待转移区域，将该供给基板的待转移区域上的微发光二极管设为待转移微发光二极管，在每一待转移微发光二极管上形成金属电极；\n\n[0010]所述接受基板的每一单色像素区域上均设有多个驱动电极；\n\n[0011]步骤S2、将所述供给基板与所述接受基板进行对位，将每一待转移微发光二极管上的金属电极对应置于接受基板的对应该所需颜色的单色像素区域上的驱动电极上，使每一待转移微发光二极管上的金属电极与驱动电极对应键合，而使得待转移微发光二极管绑定在所述接受基板的对应该所需颜色的单色像素区域上；\n\n[0012]步骤S3、对供给基板上多个微发光二极管中所有的待转移微发光二极管进行激光照射，从而使得所有的待转移微发光二极管从供给基板上脱落而固定在对应该所需颜色的单色像素区域上，完成该颜色的单色微发光二极管阵列的制作。\n\n[0013]所述步骤S3中，采用大面积激光光源并结合掩膜板对所述多个微发光二极管进行选择性照射，从而只对待转移微发光二极管进行激光照射。\n\n[0014]所述步骤S3中，采用多个定向激光光源对所述多个微发光二极管进行选择性照射，具体通过将所述多个定向激光光源对应所述供给基板上的待转移微发光二极管进行设置，从而只对待转移微发光二极管进行激光照射。\n\n[0015]所述步骤S1中，通过光刻工艺在每一待转移微发光二极管上形成金属电极。\n\n[0016]所述步骤S2中，所述多个驱动电极上设有低熔点焊盘。\n\n[0017]所述步骤S2中，将所述待转移微发光二极管绑定在所述接受基板上的具体过程为：在将待转移微发光二极管置于所述驱动电极上之后，进行加热处理，使得驱动电极上的低熔点焊盘熔化，从而将待转移微发光二极管的金属电极与所述驱动电极键合，从而使得待转移微发光二极管绑定在所述接受基板的对应该所需颜色的单色像素区域上。\n\n[0018]所述彩色微发光二极管阵列基板上不同颜色的单色微发光二极管阵列前后依次制作形成；\n\n[0019]对于在后制作的单色微发光二极管阵列的金属电极的厚度和相应的驱动电极在接受基板上的高度之和，大于在前制作的单色微发光二极管阵列在接受基板上的高度。\n\n[0020]所述步骤S3中从供给基板侧、或从接受基板侧对所述待转移微发光二极管进行激光照射。\n\n[0021]所述接受基板包括三个单色像素区域，该三个单色像素区域分别为红、绿、蓝色像素区域，所述彩色微发光二极管阵列相应包括三个不同颜色的单色微发光二极管阵列，该三个单色微发光二极管阵列分别为红、绿、蓝色微发光二极管阵列。\n\n[0022]所述接受基板为TFT阵列基板。\n\n[0023]本发明的有益效果：本发明提供了一种彩色微发光二极管阵列基板的制作方法，通过在接受基板上制作多个分别为不同颜色的单色微发光二极管阵列而形成彩色微发光二极管阵列，其中对于每一颜色的单色微发光二极管阵列的制作，结合绑定技术与激光脱落(Laser Lift Off)技术，选择性地在供给基板上特定区域的微发光二极管上形成金属电极，从而选择性地将该特定区域的微发光二极管绑定在接受基板上，并选择性的对该特定区域的微发光二极管进行激光照射，从而使该特定区域的微发光二极管经过绑定以及激光退火后与供给基板分离，在接受基板上形成单色微发光二极管阵列，进而实现了接受基板上不同颜色的单色微发光二极管阵列的制作，且制作方法简单易行。\n\n附图说明\n\n[0024]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0025]附图中，\n\n[0026]图1为本发明的彩色微发光二极管阵列基板的制作方法中制作每个单色微发光二极管阵列的流程示意图；\n\n[0027]图2为本发明的彩色微发光二极管阵列基板的制作方法中制作每个单色微发光二极管阵列的步骤S1的示意图；\n\n[0028]图3为本发明的彩色微发光二极管阵列基板的制作方法中制作每个单色微发光二极管阵列的步骤S2的示意图；\n\n[0029]图4为本发明的彩色微发光二极管阵列基板的制作方法中制作每个单色微发光二极管阵列的步骤S3的示意图；\n\n[0030]图5为图4所示的步骤S3中采用大面积激光光源并结合掩膜板对多个微发光二极管进行选择性照射的示意图；\n\n[0031]图6为图4所示的步骤S3中采用多个定向激光光源对多个微发光二极管进行选择性照射的示意图；\n\n[0032]图7为本发明的彩色微发光二极管阵列基板的制作方法的优选实施例的步骤S10的示意图；\n\n[0033]图8为本发明的彩色微发光二极管阵列基板的制作方法的优选实施例的步骤S20的示意图；\n\n[0034]图9为本发明的彩色微发光二极管阵列基板的制作方法的优选实施例的步骤S30的示意图。\n\n具体实施方式\n\n[0035]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0036]本发明提供一种彩色微发光二极管阵列基板的制作方法，所述彩色微发光二极管阵列基板包括接受基板20、及设于所述接受基板20上的彩色微发光二极管阵列；所述接受基板20包括多个分别对应不同颜色的单色像素区域，所述彩色微发光二极管阵列包括多个不同颜色的单色微发光二极管阵列，每个颜色的单色微发光二极管阵列设于对应该颜色的单色像素区域上。\n\n[0037]请参阅图1，其中，所述彩色微发光二极管阵列基板上每个颜色的单色微发光二极管阵列的制作方法，均包括如下步骤：\n\n[0038]步骤S1、如图2所示，提供对应于所需颜色的供给基板10、及接受基板20，该供给基板10上设有多个该所需颜色的微发光二极管41；对应于所述接受基板20的对应该所需颜色的单色像素区域，在该供给基板10上划分出待转移区域，将该供给基板10的待转移区域上的微发光二极管41设为待转移微发光二极管，在每一待转移微发光二极管上形成金属电极51；\n\n[0039]所述接受基板20的每一单色像素区域上均设有多个驱动电极21。\n\n[0040]具体地，所述步骤S1中，通过光刻工艺在每一待转移微发光二极管上形成金属电极51。\n\n[0041]步骤S2、如图3所示，将所述供给基板10与所述接受基板20进行对位，将每一待转移微发光二极管上的金属电极51对应置于接受基板20的对应该所需颜色的单色像素区域上的驱动电极21上，使每一待转移微发光二极管上的金属电极51与驱动电极21对应键合，而使得待转移微发光二极管绑定在所述接受基板20的对应该所需颜色的单色像素区域上。\n\n[0042]具体地，所述步骤S2中，所述多个驱动电极21上设有低熔点焊盘。\n\n[0043]具体地，所述步骤S2中，将所述待转移微发光二极管绑定在所述接受基板20上的具体过程为：在将待转移微发光二极管置于所述驱动电极21上之后，进行加热处理，使得驱动电极21上的低熔点焊盘熔化，从而将待转移微发光二极管的金属电极51与所述驱动电极21键合，从而使得待转移微发光二极管绑定在所述接受基板20的对应该所需颜色的单色像素区域上。\n\n[0044]步骤S3、如图4所示，对供给基板10上多个微发光二极管41中所有的待转移微发光二极管进行激光照射，从而使得所有的待转移微发光二极管从供给基板10上脱落而固定在对应该所需颜色的单色像素区域上，完成该颜色的单色微发光二极管阵列的制作。\n\n[0045]具体地，如图5所示，所述步骤S3中，采用大面积激光光源61并结合掩膜板70对所述多个微发光二极管41进行选择性照射，从而只对待转移微发光二极管进行激光照射。或者，\n\n[0046]如图6所示，所述步骤S3中，采用多个向性好光斑宽度较小的定向激光光源62对所述多个微发光二极管41进行选择性照射，具体通过将所述多个定向激光光源62对应所述供给基板10上的待转移微发光二极管进行设置，从而只对待转移微发光二极管进行激光照射。\n\n[0047]具体地，所述步骤S3中可以从供给基板10侧、也可以从接受基板20侧对所述待转移微发光二极管进行激光照射，这里对此不做限制。\n\n[0048]具体地，本发明的彩色微发光二极管阵列基板的制作方法中，所述彩色微发光二极管阵列基板上不同颜色的单色微发光二极管阵列前后依次制作形成；那么，对于在后制作的单色微发光二极管阵列的金属电极51的厚度和相应的驱动电极21在接受基板20上的高度之和，大于在前制作的单色微发光二极管阵列在接受基板20上的高度，从而防止在前制作单色微发光二极管阵列阻碍在后制作的单色微发光二极管阵列的金属电极51与相应的驱动电极21的键合。\n\n[0049]具体地，所述接受基板20为TFT阵列基板，从而在接受基板20上完成所有不同颜色的单色微发光二极管阵列的制作之后，可进一步用于制作彩色微发光二极管显示器，从而进行彩色显示。\n\n[0050]本发明的彩色微发光二极管阵列基板的制作方法，通过在接受基板20上制作多个分别为不同颜色的单色微发光二极管阵列而形成彩色微发光二极管阵列，其中对于每一颜色的单色微发光二极管阵列的制作，结合绑定技术与激光脱落技术，选择性地在供给基板10上特定区域的微发光二极管41上形成金属电极52，从而选择性地将该特定区域的微发光二极管41绑定在接受基板20上，并选择性的对该特定区域的微发光二极管41进行激光照射，从而使该特定区域的微发光二极管41经过绑定以及激光退火后与供给基板10分离，在接受基板20上形成单色微发光二极管阵列，进而实现了接受基板20上不同颜色的单色微发光二极管阵列的制作，且制作方法简单易行。\n\n[0051]具体地，本发明的彩色微发光二极管阵列基板的制作方法的优选实施例中，所述接受基板20包括三个单色像素区域，该三个单色像素区域分别为红、绿、蓝色像素区域，所述彩色微发光二极管阵列相应包括三个不同颜色的单色微发光二极管阵列，该三个单色微发光二极管阵列分别为红、绿、蓝色微发光二极管阵列。该优选实施例具体包括如下步骤：\n\n[0052]步骤S10、如图7所示，提供对应于所需蓝色的第一供给基板101、及接受基板20，该第一供给基板101上设有多个蓝色微发光二极管411；对应于所述接受基板20的蓝色像素区域，在该第一供给基板101上划分出待转移区域，将该供给基板101的待转移区域上的蓝色微发光二极管411设为待转移蓝色微发光二极管，在每一待转移蓝色微发光二极管上形成第一金属电极511；然后将所述第一供给基板101与接受基板20进行对位，将其每一待转移蓝色微发光二极管上的第一金属电极511对应置于接受基板20的蓝色像素区域上的驱动电极21上，使每一待转移蓝色微发光二极管上的第一金属电极511与驱动电极21对应键合，而使得待转移蓝色微发光二极管绑定在所述接受基板20的蓝色像素区域上，在所述接受基板20上完成蓝色微发光二极管阵列的制作。\n\n[0053]步骤S20、如图8所示，提供对应于所需红色的第二供给基板102，该第二供给基板102上设有多个红色微发光二极管412；对应于所述接受基板20的红色像素区域，在该第二供给基板102上划分出待转移区域，将该供给基板102的待转移区域上的红色微发光二极管412设为待转移红色微发光二极管，在每一待转移红色微发光二极管上形成第二金属电极512；然后将所述第二供给基板102与接受基板20进行对位，将其每一待转移红色微发光二极管上的第二金属电极512对应置于接受基板20的红色像素区域上的驱动电极21上，使每一待转移红色微发光二极管上的第二金属电极512与驱动电极21对应键合，而使得待转移红色微发光二极管绑定在所述接受基板20的红色像素区域上，在所述接受基板20上完成红色微发光二极管阵列的制作。\n\n[0054]步骤S30、如图9所示，提供对应于所需绿色的第三供给基板103，该第三供给基板103上设有多个绿色微发光二极管413；对应于所述接受基板20的绿色像素区域，在该第三供给基板103上划分出待转移区域，将该供给基板103的待转移区域上的绿色微发光二极管413设为待转移绿色微发光二极管，在每一待转移绿色微发光二极管上形成第三金属电极513；然后将所述第三供给基板103与接受基板20进行对位，将其每一待转移绿色微发光二极管上的第三金属电极513对应置于接受基板20的绿色像素区域上的驱动电极21上，使每一待转移绿色微发光二极管上的第三金属电极513与驱动电极21对应键合，而使得待转移绿色微发光二极管绑定在所述接受基板20的绿色像素区域上，在所述接受基板20上完成绿色微发光二极管阵列的制作，从而得到彩色微发光二极管阵列基板。\n\n[0055]综上所述，本发明提供了一种彩色微发光二极管阵列基板的制作方法，通过在接受基板上制作多个分别为不同颜色的单色微发光二极管阵列而形成彩色微发光二极管阵列，其中对于每一颜色的单色微发光二极管阵列的制作，结合绑定技术与激光脱落技术，选择性地在供给基板上特定区域的微发光二极管上形成金属电极，从而选择性地将该特定区域的微发光二极管绑定在接受基板上，并选择性的对该特定区域的微发光二极管进行激光照射，从而使该特定区域的微发光二极管经过绑定以及激光退火后与供给基板分离，在接受基板上形成单色微发光二极管阵列，进而实现了接受基板上不同颜色的单色微发光二极管阵列的制作，且制作方法简单易行。\n\n[0056]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10594, 23648, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种Micro LED彩色显示器件。\n\n背景技术\n\n[0002]随着可穿戴显示设备的快速发展，出现了微发光二极管(Micro LED，uLED)技术。Micro LED技术即LED微缩化和矩阵化技术，指的是在一个芯片上集成的高密度微小尺寸的LED阵列。Micro LED的耗电量远小于液晶显示器(Liquid Crystal Display，LCD)，与有机发光二极管(Organic Light-Emitting Diode，OLED)一样属于自发光，能够将像素之间的距离从毫米等级降至微米等级，色彩饱和度接近OLED，所以很多厂商把Micro LED视为下一代的显示技术。\n\n[0003]现有技术通过微转印(Micro Transfer Print)法来制作Micro LED阵列：将LED裸芯片(Bare Chip)通过激光剥离(Laser Lift-off，LLO)技术从蓝宝石衬底上分离开后，使用一个图案化的转移基板(Transfer Layer)将LED裸芯片从供给基板吸附起来，转移到接收基板。具体地，这个接收基板是已经预先制备完成电路图案的硅基板，通过将转移基板与接收基板进行对位，转移基板上所吸附的LED裸芯片被贴附到接收基板的匹配位置，再剥离转移基板，即可完成LED裸芯片的转移。诸如US2013/0210194，US2013/0128585等专利对微转印技术有较为细致地描述。\n\n[0004]Micro LED彩色显示器件通过正常的CMOS集成电路制造工艺制作LED显示驱动电路，再在集成电路上制作LED阵列制得。在实际的LED的生产过程中有一个对LED分规格(业界称为分Bin)的过程，在不同的Bin中，峰值波长会发生移动，LED的色度、亮度等会存在一致性偏离的问题。制备以LED作为光源的Micro LED彩色显示器件，需要大规模生产红色、绿色、及蓝色的LED，在这个过程中由于不同晶圆(Wafer)生长出的LED很大概率处于不同的Bin中，所以LED的色度一致性偏离是一个必然现象。\n\n[0005]请参阅图1，通过计算发现，对于相邻的3～4个Bin的LED，绿色LED的色度差异性最大：当峰值波长平移2nm，绿色LED的x色度差异G△x就超过了0.01，而一个Bin的峰值波长范围往往有2.5nm，这意味着对于Micro LED彩色显示器件来说，绿颜色的稳定性并不容易控制，绿颜色的色度均匀性有待改善。\n\n发明内容\n\n[0006]本发明的目的在于提供一种Micro LED彩色显示器件，其色度均匀性好，绿颜色的稳定性易于控制，显示质量得以提高。\n\n[0007]为实现上述目的，本发明提供一种Micro LED彩色显示器件，包括驱动基板、与所述驱动基板相对设置的封装基板、设在所述驱动基板与封装基板之间呈阵列式排布的多个蓝色子像素、绿色子像素、与红色子像素、以及设在所述驱动基板与封装基板之间的支撑物；每一子像素内对应设置一个LED；\n\n[0008]所述蓝色子像素包括设在所述驱动基板上的第一下像素电极、与所述第一下像素电极相对设置的第一上像素电极、及夹设在所述第一下像素电极与第一上像素电极之间的第一蓝色LED；所述绿色子像素包括设在所述驱动基板上的第二下像素电极、与所述第二下像素电极相对设置的第二上像素电极、夹设在所述第二下像素电极与第二上像素电极之间的第二蓝色LED、及设在所述第二上像素电极与封装基板之间的绿色色彩转换层；所述红色子像素包括设在所述驱动基板上的第三下像素电极、与所述第三下像素电极相对设置的第三上像素电极、及夹设在所述第三下像素电极与第三上像素电极之间的LED。\n\n[0009]可选的，所述红色子像素中，所述夹设在所述第三下像素电极与第三上像素电极之间的LED为红色LED。\n\n[0010]可选的，所述红色子像素中，所述夹设在所述第三下像素电极与第三上像素电极之间的LED为第三蓝色LED；所述红色子像素还包括设在所述第三上像素电极与封装基板之间的红色色彩转换层。\n\n[0011]所述蓝色子像素还包括设在第一上像素电极与封装基板之间的第一透明间隔体；所述红色子像素还包括设在第三上像素电极与封装基板之间的第二透明间隔体。\n\n[0012]所述蓝色子像素还包括设在第一上像素电极与封装基板之间的第一透明间隔体。\n\n[0013]所述绿色色彩转换层的材料是绿色量子点。\n\n[0014]所述红色色彩转换层的材料是红色量子点。\n\n[0015]所述第一透明间隔体与第二透明间隔体的高度相同或不同，所述第一蓝色LED和第一透明间隔体的高度之和与红色LED和第二透明间隔体的高度之和一致。\n\n[0016]所述第一上像素电极与第三上像素电极的高度相同或不同；所述第一下像素电极、第一蓝色LED、与第一上像素电极的高度之和等于驱动基板与封装基板之间的间距；所述第三下像素电极、红色LED、与第三上像素电极的高度之和等于驱动基板与封装基板之间的间距。\n\n[0017]所述封装基板的材料为聚对苯二甲酸乙二醇酯、聚碳酸酯、或玻璃；\n\n[0018]所述支撑物的材料为有机光阻或硅球；\n\n[0019]所述第一透明间隔体、第二透明间隔体的材料均为有机透明材料、或无机透明材料；\n\n[0020]第一、第二、第三上像素电极、及第一、第二、第三下像素电极的材料均为氧化铟锡、或导电金属。\n\n[0021]本发明的有益效果：本发明提供的一种Micro LED彩色显示器件，在绿色子像素中采用短波长的第二蓝色LED激发绿色色彩转换层发光来代替绿色LED，第二蓝色LED本身较为稳定，可通过控制绿色色彩转换层涂布厚度的精度来控制绿颜色的色度，涂布厚度的精度控制比绿色LED的规格控制容易，能够使得色度均匀性较好，绿颜色的稳定性易于控制，显示质量提高。\n\n附图说明\n\n[0022]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0023]附图中，\n\n[0024]图1为纯色色度随LED峰值波长平移发生偏离的曲线关系示意图；\n\n[0025]图2为本发明的Micro LED彩色显示器件的第一实施例的结构示意图；\n\n[0026]图3为本发明的Micro LED彩色显示器件的第二实施例的结构示意图；\n\n[0027]图4为本发明的Micro LED彩色显示器件的第三实施例的结构示意图；\n\n[0028]图5为采用喷墨打印法制备绿色色彩转换层的示意图。\n\n具体实施方式\n\n[0029]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0030]本发明提供一种Micro LED彩色显示器件。图2所示为本发明的Micro LED彩色显示器件的第一实施例，包括驱动基板1、与所述驱动基板1相对设置的封装基板2、设在所述驱动基板1与封装基板2之间呈阵列式排布的多个蓝色子像素P1、绿色子像素P2、与红色子像素P3、以及设在所述驱动基板1与封装基板2之间的支撑物4。\n\n[0031]所述蓝色子像素P1包括设在所述驱动基板1上的第一下像素电极E11、与所述第一下像素电极E11相对设置的第一上像素电极E12、夹设在所述第一下像素电极E11与第一上像素电极E12之间的第一蓝色LED B1、及设在第一上像素电极E12与封装基板2之间的第一透明间隔体S1；所述绿色子像素P2包括设在所述驱动基板1上的第二下像素电极E21、与所述第二下像素电极E21相对设置的第二上像素电极E22、夹设在所述第二下像素电极E21与第二上像素电极E22之间的第二蓝色LED B2、及设在所述第二上像素电极E22与封装基板2之间的绿色色彩转换层G；所述红色子像素P3包括设在所述驱动基板1上的第三下像素电极E31、与所述第三下像素电极E31相对设置的第三上像素电极E32、夹设在所述第三下像素电极E31与第三上像素电极E32之间的红色LED R、及设在第三上像素电极E32与封装基板2之间的第二透明间隔体S2。\n\n[0032]在本发明的Micro LED彩色显示器件的第一实施例中，蓝色子像素P1采用第一蓝色LED B1直接发出蓝颜色光，红色子像素P3采用红色LED R直接发出红颜色光，结合图1，第一蓝色LED B1与红色LED R随着峰值波长偏移的色度差异性都较小，也就是说相邻Bin的第一蓝色LED B1与红色LED R的光学差异不大，所以第一蓝色LED B1与红色LED R本身的色度就比较均匀。本发明与现有技术最大的不同在于：绿色子像素P2采用短波长的第二蓝色LEDB2激发绿色色彩转换层G发出绿颜色光来代替绿色LED直接发光，第二蓝色LED B2本身较为稳定，可通过控制绿色色彩转换层G涂布厚度的精度来控制绿颜色的色度，涂布厚度的精度控制比绿色LED的Bin控制容易，能够使得绿颜色的色度均匀性较好，绿颜色的稳定性易于控制，从而提高整体显示质量。\n\n[0033]具体地：\n\n[0034]所述绿色色彩转换层G的材料是绿色量子点,能够受蓝光激发而发出绿光。该绿色色彩转换层G涂布在封装基板2上。\n\n[0035]所述驱动基板1内设有显示驱动电路(未图示)，以薄膜晶体管(Thin FilmTransistor，TFT)阵列控制每个子像素内LED的开关和亮度。\n\n[0036]所述封装基板2的材料可为聚对苯二甲酸乙二醇酯(PET)、或聚碳酸酯(PC)等有一定硬度的塑料，也可以是玻璃。\n\n[0037]第一、第二、第三上像素电极E12、E22、E32、及第一、第二、第三下像素电极E11、E21、E31的材料均为氧化铟锡(Indium Tin Oxide，ITO)、或导电金属，如银(Ag)等。\n\n[0038]所述支撑物4用于使驱动基板1与封装基板2之间保持一定的间距，并防止绿色色彩转换层G受到第二蓝色LED B2的挤压，即使支撑物4受压变形，也不应当使绿色色彩转换层G受压而发生高度即膜厚的变化；进一步地，所述支撑物4的材料可以是用于制作液晶显示器中光阻间隔柱(Photo spacer)的有机光阻，也可以是较为坚硬的硅球等。\n\n[0039]所述第一透明间隔体S1、第二透明间隔体S2的设置是为了使得第一上像素电极E12、第二上像素电极E22、及第三上像素电极E32处于相同高度，这样便可以使得第一蓝色LED B1、第二蓝色LED B2、及红色LED R的高度较为统一；进一地，所述第一透明间隔体S1、第二透明间隔体S2的材料均为有机透明材料如全氟烷氧基树脂(PFA)、或无机透明材料。考虑到封装基板2上需涂布绿色色彩转换层G，在制作所述第一透明间隔体S1、第二透明间隔体S2时优选与制作绿色色彩转换层G较为一致的工艺制程。\n\n[0040]所述第一透明间隔体S1与第二透明间隔体S2的高度可以相同，也可以不同，只要保证第一蓝色LED B1和第一透明间隔体S1的高度之和与红色LED R和第二透明间隔体S2的高度之和较为一致便可使得第一上像素电极E12与第三上像素电极E32的高度即膜厚较为一致。\n\n[0041]图3所示为本发明的Micro LED彩色显示器件的第二实施例，该第二实施例与第一实施例的区别在于：省去第一透明间隔体S1，由第一上像素电极E12直接接触封装基板2；省去第二透明间隔体S2，由第三上像素电极E32直接接触封装基板2。其它结构均不变，此处不再进行重复描述。\n\n[0042]进一步地，所述第一上像素电极E12与第三上像素电极E32的高度即膜厚可以相同，也可以不同，只要在制作各像素电极时利用掩膜板(Mask)控制不同子像素中相应像素电极的膜厚，保证所述第一下像素电极E11、第一蓝色LED B1、与第一上像素电极E12的高度之和等于驱动基板1与封装基板2之间的间距，以及所述第三下像素电极E31、红色LED R、与第三上像素电极E32的高度之和等于驱动基板1与封装基板2之间的间距。\n\n[0043]图4所示为本发明的Micro LED彩色显示器件的第三实施例，该第三实施例与第一实施例的区别在于：由于红色LED R的效率往往不高，将红色子像素P3中夹设在所述第三下像素电极E31与第三上像素电极E32之间的红色LED R替换为第三蓝色LED B3，将设在所述第三上像素电极E32与封装基板2之间的第二透明间隔体S2替换为红色色彩转换层R’，通过第三蓝色LED B3激发红色色彩转换层R’发出红颜色光来代替红色LED R直接发光，以提高红色子像素P3的发光效率。其它结构均不变，此处不再进行重复描述。\n\n[0044]进一步地，所述红色色彩转换层R’的材料是红色量子点。\n\n[0045]所述绿色色彩转换层G及红色色彩转换层R’可通过狭缝涂布(Slit Coating)、喷墨打印(Inkjet Printing，IJP)、或热蒸镀等方法涂布在封装基板2上。请参阅图5，当采用IJP方式在像素界定层间涂布绿色色彩转换层G或红色色彩转换层R’时，可以以像素界定层作为支撑物4。\n\n[0046]综上所述，本发明的Micro LED彩色显示器件，在绿色子像素中采用短波长的第二蓝色LED激发绿色色彩转换层发光来代替绿色LED，第二蓝色LED本身较为稳定，可通过控制绿色色彩转换层涂布厚度的精度来控制绿颜色的色度，涂布厚度的精度控制比绿色LED的规格控制容易，能够使得色度均匀性较好，绿颜色的稳定性易于控制，显示质量提高。\n\n[0047]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种Micro LED彩色显示器件。\n\n背景技术\n\n[0002]随着可穿戴显示设备的快速发展，出现了微发光二极管(Micro LED，uLED)技术。Micro LED技术即LED微缩化和矩阵化技术，指的是在一个芯片上集成的高密度微小尺寸的LED阵列。Micro LED的耗电量远小于液晶显示器(Liquid Crystal Display，LCD)，与有机发光二极管(Organic Light-Emitting Diode，OLED)一样属于自发光，能够将像素之间的距离从毫米等级降至微米等级，色彩饱和度接近OLED，所以很多厂商把Micro LED视为下一代的显示技术。\n\n[0003]现有技术通过微转印(Micro Transfer Print)法来制作Micro LED阵列：将LED裸芯片(Bare Chip)通过激光剥离(Laser Lift-off，LLO)技术从蓝宝石衬底上分离开后，使用一个图案化的转移基板(Transfer Layer)将LED裸芯片从供给基板吸附起来，转移到接收基板。具体地，这个接收基板是已经预先制备完成电路图案的硅基板，通过将转移基板与接收基板进行对位，转移基板上所吸附的LED裸芯片被贴附到接收基板的匹配位置，再剥离转移基板，即可完成LED裸芯片的转移。诸如US2013/0210194，US2013/0128585等专利对微转印技术有较为细致地描述。\n\n[0004]Micro LED彩色显示器件通过正常的CMOS集成电路制造工艺制作LED显示驱动电路，再在集成电路上制作LED阵列制得。在实际的LED的生产过程中有一个对LED分规格(业界称为分Bin)的过程，在不同的Bin中，峰值波长会发生移动，LED的色度、亮度等会存在一致性偏离的问题。制备以LED作为光源的Micro LED彩色显示器件，需要大规模生产红色、绿色、及蓝色的LED，在这个过程中由于不同晶圆(Wafer)生长出的LED很大概率处于不同的Bin中，所以LED的色度一致性偏离是一个必然现象。\n\n[0005]请参阅图1，通过计算发现，对于相邻的3～4个Bin的LED，绿色LED的色度差异性最大：当峰值波长平移2nm，绿色LED的x色度差异G△x就超过了0.01，而一个Bin的峰值波长范围往往有2.5nm，这意味着对于Micro LED彩色显示器件来说，绿颜色的稳定性并不容易控制，绿颜色的色度均匀性有待改善。\n\n发明内容\n\n[0006]本发明的目的在于提供一种Micro LED彩色显示器件，其色度均匀性好，绿颜色的稳定性易于控制，显示质量得以提高。\n\n[0007]为实现上述目的，本发明提供一种Micro LED彩色显示器件，包括驱动基板、与所述驱动基板相对设置的封装基板、设在所述驱动基板与封装基板之间呈阵列式排布的多个蓝色子像素、绿色子像素、与红色子像素、以及设在所述驱动基板与封装基板之间的支撑物；每一子像素内对应设置一个LED；\n\n[0008]所述蓝色子像素包括设在所述驱动基板上的第一下像素电极、与所述第一下像素电极相对设置的第一上像素电极、及夹设在所述第一下像素电极与第一上像素电极之间的第一蓝色LED；所述绿色子像素包括设在所述驱动基板上的第二下像素电极、与所述第二下像素电极相对设置的第二上像素电极、夹设在所述第二下像素电极与第二上像素电极之间的第二蓝色LED、及设在所述第二上像素电极与封装基板之间的绿色色彩转换层；所述红色子像素包括设在所述驱动基板上的第三下像素电极、与所述第三下像素电极相对设置的第三上像素电极、及夹设在所述第三下像素电极与第三上像素电极之间的LED。\n\n[0009]可选的，所述红色子像素中，所述夹设在所述第三下像素电极与第三上像素电极之间的LED为红色LED。\n\n[0010]可选的，所述红色子像素中，所述夹设在所述第三下像素电极与第三上像素电极之间的LED为第三蓝色LED；所述红色子像素还包括设在所述第三上像素电极与封装基板之间的红色色彩转换层。\n\n[0011]所述蓝色子像素还包括设在第一上像素电极与封装基板之间的第一透明间隔体；所述红色子像素还包括设在第三上像素电极与封装基板之间的第二透明间隔体。\n\n[0012]所述蓝色子像素还包括设在第一上像素电极与封装基板之间的第一透明间隔体。\n\n[0013]所述绿色色彩转换层的材料是绿色量子点。\n\n[0014]所述红色色彩转换层的材料是红色量子点。\n\n[0015]所述第一透明间隔体与第二透明间隔体的高度相同或不同，所述第一蓝色LED和第一透明间隔体的高度之和与红色LED和第二透明间隔体的高度之和一致。\n\n[0016]所述第一上像素电极与第三上像素电极的高度相同或不同；所述第一下像素电极、第一蓝色LED、与第一上像素电极的高度之和等于驱动基板与封装基板之间的间距；所述第三下像素电极、红色LED、与第三上像素电极的高度之和等于驱动基板与封装基板之间的间距。\n\n[0017]所述封装基板的材料为聚对苯二甲酸乙二醇酯、聚碳酸酯、或玻璃；\n\n[0018]所述支撑物的材料为有机光阻或硅球；\n\n[0019]所述第一透明间隔体、第二透明间隔体的材料均为有机透明材料、或无机透明材料；\n\n[0020]第一、第二、第三上像素电极、及第一、第二、第三下像素电极的材料均为氧化铟锡、或导电金属。\n\n[0021]本发明的有益效果：本发明提供的一种Micro LED彩色显示器件，在绿色子像素中采用短波长的第二蓝色LED激发绿色色彩转换层发光来代替绿色LED，第二蓝色LED本身较为稳定，可通过控制绿色色彩转换层涂布厚度的精度来控制绿颜色的色度，涂布厚度的精度控制比绿色LED的规格控制容易，能够使得色度均匀性较好，绿颜色的稳定性易于控制，显示质量提高。\n\n附图说明\n\n[0022]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0023]附图中，\n\n[0024]图1为纯色色度随LED峰值波长平移发生偏离的曲线关系示意图；\n\n[0025]图2为本发明的Micro LED彩色显示器件的第一实施例的结构示意图；\n\n[0026]图3为本发明的Micro LED彩色显示器件的第二实施例的结构示意图；\n\n[0027]图4为本发明的Micro LED彩色显示器件的第三实施例的结构示意图；\n\n[0028]图5为采用喷墨打印法制备绿色色彩转换层的示意图。\n\n具体实施方式\n\n[0029]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0030]本发明提供一种Micro LED彩色显示器件。图2所示为本发明的Micro LED彩色显示器件的第一实施例，包括驱动基板1、与所述驱动基板1相对设置的封装基板2、设在所述驱动基板1与封装基板2之间呈阵列式排布的多个蓝色子像素P1、绿色子像素P2、与红色子像素P3、以及设在所述驱动基板1与封装基板2之间的支撑物4。\n\n[0031]所述蓝色子像素P1包括设在所述驱动基板1上的第一下像素电极E11、与所述第一下像素电极E11相对设置的第一上像素电极E12、夹设在所述第一下像素电极E11与第一上像素电极E12之间的第一蓝色LED B1、及设在第一上像素电极E12与封装基板2之间的第一透明间隔体S1；所述绿色子像素P2包括设在所述驱动基板1上的第二下像素电极E21、与所述第二下像素电极E21相对设置的第二上像素电极E22、夹设在所述第二下像素电极E21与第二上像素电极E22之间的第二蓝色LED B2、及设在所述第二上像素电极E22与封装基板2之间的绿色色彩转换层G；所述红色子像素P3包括设在所述驱动基板1上的第三下像素电极E31、与所述第三下像素电极E31相对设置的第三上像素电极E32、夹设在所述第三下像素电极E31与第三上像素电极E32之间的红色LED R、及设在第三上像素电极E32与封装基板2之间的第二透明间隔体S2。\n\n[0032]在本发明的Micro LED彩色显示器件的第一实施例中，蓝色子像素P1采用第一蓝色LED B1直接发出蓝颜色光，红色子像素P3采用红色LED R直接发出红颜色光，结合图1，第一蓝色LED B1与红色LED R随着峰值波长偏移的色度差异性都较小，也就是说相邻Bin的第一蓝色LED B1与红色LED R的光学差异不大，所以第一蓝色LED B1与红色LED R本身的色度就比较均匀。本发明与现有技术最大的不同在于：绿色子像素P2采用短波长的第二蓝色LEDB2激发绿色色彩转换层G发出绿颜色光来代替绿色LED直接发光，第二蓝色LED B2本身较为稳定，可通过控制绿色色彩转换层G涂布厚度的精度来控制绿颜色的色度，涂布厚度的精度控制比绿色LED的Bin控制容易，能够使得绿颜色的色度均匀性较好，绿颜色的稳定性易于控制，从而提高整体显示质量。\n\n[0033]具体地：\n\n[0034]所述绿色色彩转换层G的材料是绿色量子点,能够受蓝光激发而发出绿光。该绿色色彩转换层G涂布在封装基板2上。\n\n[0035]所述驱动基板1内设有显示驱动电路(未图示)，以薄膜晶体管(Thin FilmTransistor，TFT)阵列控制每个子像素内LED的开关和亮度。\n\n[0036]所述封装基板2的材料可为聚对苯二甲酸乙二醇酯(PET)、或聚碳酸酯(PC)等有一定硬度的塑料，也可以是玻璃。\n\n[0037]第一、第二、第三上像素电极E12、E22、E32、及第一、第二、第三下像素电极E11、E21、E31的材料均为氧化铟锡(Indium Tin Oxide，ITO)、或导电金属，如银(Ag)等。\n\n[0038]所述支撑物4用于使驱动基板1与封装基板2之间保持一定的间距，并防止绿色色彩转换层G受到第二蓝色LED B2的挤压，即使支撑物4受压变形，也不应当使绿色色彩转换层G受压而发生高度即膜厚的变化；进一步地，所述支撑物4的材料可以是用于制作液晶显示器中光阻间隔柱(Photo spacer)的有机光阻，也可以是较为坚硬的硅球等。\n\n[0039]所述第一透明间隔体S1、第二透明间隔体S2的设置是为了使得第一上像素电极E12、第二上像素电极E22、及第三上像素电极E32处于相同高度，这样便可以使得第一蓝色LED B1、第二蓝色LED B2、及红色LED R的高度较为统一；进一地，所述第一透明间隔体S1、第二透明间隔体S2的材料均为有机透明材料如全氟烷氧基树脂(PFA)、或无机透明材料。考虑到封装基板2上需涂布绿色色彩转换层G，在制作所述第一透明间隔体S1、第二透明间隔体S2时优选与制作绿色色彩转换层G较为一致的工艺制程。\n\n[0040]所述第一透明间隔体S1与第二透明间隔体S2的高度可以相同，也可以不同，只要保证第一蓝色LED B1和第一透明间隔体S1的高度之和与红色LED R和第二透明间隔体S2的高度之和较为一致便可使得第一上像素电极E12与第三上像素电极E32的高度即膜厚较为一致。\n\n[0041]图3所示为本发明的Micro LED彩色显示器件的第二实施例，该第二实施例与第一实施例的区别在于：省去第一透明间隔体S1，由第一上像素电极E12直接接触封装基板2；省去第二透明间隔体S2，由第三上像素电极E32直接接触封装基板2。其它结构均不变，此处不再进行重复描述。\n\n[0042]进一步地，所述第一上像素电极E12与第三上像素电极E32的高度即膜厚可以相同，也可以不同，只要在制作各像素电极时利用掩膜板(Mask)控制不同子像素中相应像素电极的膜厚，保证所述第一下像素电极E11、第一蓝色LED B1、与第一上像素电极E12的高度之和等于驱动基板1与封装基板2之间的间距，以及所述第三下像素电极E31、红色LED R、与第三上像素电极E32的高度之和等于驱动基板1与封装基板2之间的间距。\n\n[0043]图4所示为本发明的Micro LED彩色显示器件的第三实施例，该第三实施例与第一实施例的区别在于：由于红色LED R的效率往往不高，将红色子像素P3中夹设在所述第三下像素电极E31与第三上像素电极E32之间的红色LED R替换为第三蓝色LED B3，将设在所述第三上像素电极E32与封装基板2之间的第二透明间隔体S2替换为红色色彩转换层R’，通过第三蓝色LED B3激发红色色彩转换层R’发出红颜色光来代替红色LED R直接发光，以提高红色子像素P3的发光效率。其它结构均不变，此处不再进行重复描述。\n\n[0044]进一步地，所述红色色彩转换层R’的材料是红色量子点。\n\n[0045]所述绿色色彩转换层G及红色色彩转换层R’可通过狭缝涂布(Slit Coating)、喷墨打印(Inkjet Printing，IJP)、或热蒸镀等方法涂布在封装基板2上。请参阅图5，当采用IJP方式在像素界定层间涂布绿色色彩转换层G或红色色彩转换层R’时，可以以像素界定层作为支撑物4。\n\n[0046]综上所述，本发明的Micro LED彩色显示器件，在绿色子像素中采用短波长的第二蓝色LED激发绿色色彩转换层发光来代替绿色LED，第二蓝色LED本身较为稳定，可通过控制绿色色彩转换层涂布厚度的精度来控制绿颜色的色度，涂布厚度的精度控制比绿色LED的规格控制容易，能够使得色度均匀性较好，绿颜色的稳定性易于控制，显示质量提高。\n\n[0047]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10595, 23649, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种蓝光吸收截止膜及蓝光显示装置。\n\n背景技术\n\n[0002]随着显示技术的不断发展，人们对显示装置的显示质量要求也越来越高。量子点材料(Quantum Dot，简称QD)是指粒径在1-100nm的半导体晶粒。由于QD的粒径较小，小于或者接近相应本体材料的激子波尔半径，产生量子限域效应，本体材料连续的能带结构会转变为分立的能级结构，在外部光源的激发下，电子会发生跃迁，发射荧光。\n\n[0003]QD这种特殊的分立能级结构使其半波宽较窄，因而可发出较高纯度的单色光，相比于传统显示器具有更高的发光效率。同时，由于QD的能级带隙，受其尺寸影响较大，可以通过调控QD的尺寸或使用不同成分的QD来激发出不同波长的光。现有的技术主要集中于将发光波段在红(R)光、绿(G)光、及蓝(B)光的量子点混合封装于工程塑料薄膜中而制成量子点薄膜(QD film)、或混合封装于玻璃管中而制成量子点管(QD tube)，并将该结构置于背光与显示系统之间的位置，以传统白光背光激发，以达到丰富色域的目的，但无论是QDfilm还是QD tube结构，对于量子点材料的使用手段较为单一，同时也由于需要如光学优质的聚乙烯对苯二酸酯(PET)膜及小孔径玻璃管的保护与封装，存在一定的成本过高以及材料信赖性问题。\n\n[0004]近期关于量子点的应用，业内还有另一种方案，即将QD材料制备成量子点彩色滤光片(QD Color Filter，QDCF)以替代传统彩色滤光片的构想，业界已经取得了一些进展。目前，最常见的做法是，将QD材料掺杂在彩色滤光片的结构中，搭配蓝色背光使用，利用光致发光的特性，实现彩色显示。例如，现有的含有QDCF的液晶显示面板中，所述QDCF通常包括数个阵列排布的红色像素单元、绿色像素单元、及蓝色像素单元，其中，所述红色像素单元、绿色像素单元分别由红色量子点油墨材料、绿色量子点油墨材料经喷墨打印(inkjet)工艺形成，所述红色像素单元、绿色像素单元在蓝色背光的激发下分别发出红光和绿光，而所述蓝色像素单元则通过透明有机材料填充而形成，其发出的蓝光通过产生蓝色背光的背光模组提供。由于蓝色背光并不是100％都可以用于激发QDCF，没有被利用的蓝色背光也会透过红色像素单元、绿色像素单元，导致画面无法正常显示，而整体偏蓝。\n\n发明内容\n\n[0005]本发明的目的在于提供一种蓝光吸收截止膜，由光刻胶材料形成，能够有效吸收蓝光显示装置中多余的蓝光而避免其整体显示效果偏蓝色，且制作方法简单。\n\n[0006]本发明的目的还在于提供一种蓝光显示装置，包括上述的蓝光吸收截止膜，能够有效吸收蓝光显示装置中多余的蓝光而避免其整体显示效果偏蓝色。\n\n[0007]为实现上述目的，本发明提供了一种蓝光吸收截止膜，其由光刻胶材料形成，所述光刻胶材料包括树脂、黄色颜料、分散剂、及光引发剂。\n\n[0008]所述光刻胶材料中，所述黄色颜料为偶氮类、色酚类、苯并咪唑酮类、或偶氮缩合类的黄色颜料。\n\n[0009]所述光刻胶材料中，所述树脂为甲基丙烯酸系树脂、或环氧系树脂。\n\n[0010]本发明还提供一种蓝光显示装置，包括蓝光光源、设于所述蓝光光源上方的光致发光彩色滤光片、及设于所述光致发光彩色滤光片上方的如上所述的蓝光吸收截止膜。\n\n[0011]所述光致发光彩色滤光片包括数个阵列排布的红色像素单元、绿色像素单元、及蓝色像素单元；\n\n[0012]所述蓝光吸收截止膜对应蓝色像素单元设有开口。\n\n[0013]所述光致发光彩色滤光片为量子点彩色滤光片；\n\n[0014]所述红色像素单元、绿色像素单元分别由红色量子点油墨材料、绿色量子点油墨材料经喷墨打印工艺形成，所述蓝色像素单元的材料为透明有机材料。\n\n[0015]所述光致发光彩色滤光片为荧光染料彩色滤光片。\n\n[0016]所述蓝光吸收截止膜经图案化工艺形成，用于去除所述蓝光光源发出的穿过所述红色像素单元及绿色像素单元后未转化的蓝色荧光光线。\n\n[0017]所述蓝光吸收截止膜的制作方法具体包括如下步骤：\n\n[0018]步骤S1、由所述光刻胶材料涂布形成一层黄色膜层；\n\n[0019]步骤S2、在所述黄色膜层上涂布形成光阻层；\n\n[0020]步骤S3、提供掩膜板，利用所述掩膜板对所述光阻层进行曝光，对曝光后的光阻层进行显影，得到光阻图案层；\n\n[0021]步骤S4、以所述光阻图案层为遮蔽层，对所述黄色膜层进行蚀刻，得到图案化的蓝光吸收截止膜。\n\n[0022]所述的蓝光显示装置为液晶显示装置、微发光二极管显示装置、或有机发光二极管显示装置。\n\n[0023]本发明的有益效果：本发明的蓝光吸收截止膜，由光刻胶材料形成，所述光刻胶材料包括树脂、黄色颜料、分散剂、及光引发剂，能够有效吸收蓝光显示装置中多余的蓝光而避免其整体显示效果偏蓝色，且制作方法简单。本发明的蓝光显示装置，包括上述的蓝光吸收截止膜，能够有效吸收蓝光显示装置中多余的蓝光而避免其整体显示效果偏蓝色。\n\n附图说明\n\n[0024]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。\n\n[0025]附图中，\n\n[0026]图1为本发明的蓝光显示装置的结构示意图；\n\n[0027]图2为本发明的蓝光吸收截止膜的制作方法的步骤S1的示意图；\n\n[0028]图3为本发明的蓝光吸收截止膜的制作方法的步骤S2的示意图；\n\n[0029]图4-5为本发明的蓝光吸收截止膜的制作方法的步骤S3的示意图；\n\n[0030]图6为本发明的蓝光吸收截止膜的制作方法的步骤S4的示意图。\n\n具体实施方式\n\n[0031]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0032]本发明首先提供一种蓝光吸收截止膜，其由光刻胶材料形成，所述光刻胶材料包括树脂、黄色颜料、分散剂、及光引发剂。\n\n[0033]具体地，所述光刻胶材料中，所述黄色颜料为偶氮类(如汉沙黄10G、联苯胺黄)、色酚类(如永固黄)、苯并咪唑酮类(如C.I.颜料黄154)、或偶氮缩合类(如固美脱黄3G)的黄色颜料。\n\n[0034]具体地，所述光刻胶材料中，所述树脂为甲基丙烯酸系树脂、或环氧系树脂，即所述光刻胶材料为通过在甲基丙烯酸系树脂、或环氧系树脂中添加黄色颜料、分散剂、及光引发剂等所形成的材料。\n\n[0035]本发明的蓝光吸收截止膜，由光刻胶材料形成，所述光刻胶材料包括树脂、黄色颜料、分散剂、及光引发剂，其可以应用于一切通过蓝光过渡到其他颜色光而进行彩色显示的蓝光显示装置中，例如通过蓝光过渡到其他颜色光而进行彩色显示的液晶显示装置、微发光二极管(Micro LED)显示装置、及有机发光二极管显示装置(OLED)等，能够有效吸收蓝光显示装置中多余的蓝光而避免其整体显示效果偏蓝色，且制作方法简单。\n\n[0036]请参阅图1，基于上述的蓝光吸收截止膜，本发明还提供一种蓝光显示装置，包括蓝光光源10、设于所述蓝光光源10上方的光致发光彩色滤光片20、及设于所述光致发光彩色滤光片20上方的如上述的蓝光吸收截止膜30。\n\n[0037]具体地，所述光致发光彩色滤光片20包括数个阵列排布的红色像素单元21、绿色像素单元22、及蓝色像素单元23；所述蓝光吸收截止膜30对应蓝色像素单元23设有开口31。\n\n[0038]具体地，所述光致发光彩色滤光片20可以为量子点彩色滤光片，也可以为由荧光染料掺杂而形成的荧光染料彩色滤光片、或其他光致发光的彩色滤光片。\n\n[0039]具体地，所述蓝光吸收截止膜30经图案化工艺形成，用于去除所述蓝光光源10发出的穿过所述红色像素单元21及绿色像素单元22后未转化的蓝色荧光光线。\n\n[0040]具体地，所述蓝光吸收截止膜30的制作方法具体包括如下步骤：\n\n[0041]步骤S1、如图2所示，提供所述光刻胶材料，由所述光刻胶材料涂布形成一层能够吸收蓝光的黄色膜层35。\n\n[0042]步骤S2、如图3所示，在所述黄色膜层35上涂布形成光阻层55。\n\n[0043]步骤S3、如图4及图5所示，提供掩膜板70，利用所述掩膜板70对所述光阻层55进行曝光，对曝光后的光阻层55进行显影，得到光阻图案层50。\n\n[0044]步骤S4、如图6所示，以所述光阻图案层50为遮蔽层，对所述黄色膜层35进行蚀刻，得到图案化的蓝光吸收截止膜30，从而完成蓝光吸收截止膜30的制作。\n\n[0045]具体地，本发明的蓝光显示装置可以为任意一种通过蓝光过渡到其他颜色光而进行彩色显示的显示装置，例如通过蓝光过渡到其他颜色光而进行彩色显示的液晶显示装置、微发光二极管显示装置、及有机发光二极管显示装置等，其通过采用蓝光吸收截止膜30，能够有效吸收蓝光显示装置中多余的蓝光而避免其整体显示效果偏蓝色。\n\n[0046]具体地，在本发明的蓝光显示装置一优选实施例中，所述光致发光彩色滤光片20为量子点彩色滤光片，还包括黑色像素间隔层24，所述黑色像素间隔层24将所述红色像素单元21、绿色像素单元22、及蓝色像素单元23间隔开；所述红色像素单元21、绿色像素单元22分别由红色量子点油墨材料、绿色量子点油墨材料经喷墨打印工艺形成，所述蓝色像素单元23的材料为透明有机材料。所述蓝光显示装置为液晶显示装置，还包括上下相对设置的彩膜基板40与阵列基板(未图示)、及设于彩膜基板40与阵列基板之间的液晶层(未图示)，所述蓝光吸收截止膜30、光致发光彩色滤光片20依次设于所述彩膜基板40靠近液晶层的一侧，所述蓝光光源10作为背光光源，设于所述阵列基板的下方，为所述蓝光显示装置提供蓝色背光。所述蓝光光源10发出蓝色背光，所述蓝色背光穿过阵列基板与液晶层而照射在光致发光彩色滤光片20上，在蓝色背光的激发下，所述光致发光彩色滤光片20中，红色像素单元21内的红色量子点会发出半高宽很窄的红光，与未被吸收的蓝色背光形成混合光，该混合光随后经过蓝光吸收截止膜30后，其中的蓝色背光被吸收，从而被滤成高纯度的红色单色光而显红色；同理，蓝色背光经绿色像素单元22及蓝光吸收截止膜30后发出绿色单色光而显绿色；而对应蓝色像素单元23的位置由于采用透明有机材料制作且没有蓝光吸收截止膜30的覆盖而直接透过蓝色背光而显蓝色；最终提供了彩色显示所需的红、绿、蓝三原色，实现了彩色显示，并能够有效提高显示色域指数。\n\n[0047]综上所述，本发明的蓝光吸收截止膜，由光刻胶材料形成，所述光刻胶材料包括树脂、黄色颜料、分散剂、及光引发剂，能够有效吸收蓝光显示装置中多余的蓝光而避免其整体显示效果偏蓝色，且制作方法简单。本发明的蓝光显示装置，包括上述的蓝光吸收截止膜，能够有效吸收蓝光显示装置中多余的蓝光而避免其整体显示效果偏蓝色。\n\n[0048]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种蓝光吸收截止膜及蓝光显示装置。\n\n背景技术\n\n[0002]随着显示技术的不断发展，人们对显示装置的显示质量要求也越来越高。量子点材料(Quantum Dot，简称QD)是指粒径在1-100nm的半导体晶粒。由于QD的粒径较小，小于或者接近相应本体材料的激子波尔半径，产生量子限域效应，本体材料连续的能带结构会转变为分立的能级结构，在外部光源的激发下，电子会发生跃迁，发射荧光。\n\n[0003]QD这种特殊的分立能级结构使其半波宽较窄，因而可发出较高纯度的单色光，相比于传统显示器具有更高的发光效率。同时，由于QD的能级带隙，受其尺寸影响较大，可以通过调控QD的尺寸或使用不同成分的QD来激发出不同波长的光。现有的技术主要集中于将发光波段在红(R)光、绿(G)光、及蓝(B)光的量子点混合封装于工程塑料薄膜中而制成量子点薄膜(QD film)、或混合封装于玻璃管中而制成量子点管(QD tube)，并将该结构置于背光与显示系统之间的位置，以传统白光背光激发，以达到丰富色域的目的，但无论是QDfilm还是QD tube结构，对于量子点材料的使用手段较为单一，同时也由于需要如光学优质的聚乙烯对苯二酸酯(PET)膜及小孔径玻璃管的保护与封装，存在一定的成本过高以及材料信赖性问题。\n\n[0004]近期关于量子点的应用，业内还有另一种方案，即将QD材料制备成量子点彩色滤光片(QD Color Filter，QDCF)以替代传统彩色滤光片的构想，业界已经取得了一些进展。目前，最常见的做法是，将QD材料掺杂在彩色滤光片的结构中，搭配蓝色背光使用，利用光致发光的特性，实现彩色显示。例如，现有的含有QDCF的液晶显示面板中，所述QDCF通常包括数个阵列排布的红色像素单元、绿色像素单元、及蓝色像素单元，其中，所述红色像素单元、绿色像素单元分别由红色量子点油墨材料、绿色量子点油墨材料经喷墨打印(inkjet)工艺形成，所述红色像素单元、绿色像素单元在蓝色背光的激发下分别发出红光和绿光，而所述蓝色像素单元则通过透明有机材料填充而形成，其发出的蓝光通过产生蓝色背光的背光模组提供。由于蓝色背光并不是100％都可以用于激发QDCF，没有被利用的蓝色背光也会透过红色像素单元、绿色像素单元，导致画面无法正常显示，而整体偏蓝。\n\n发明内容\n\n[0005]本发明的目的在于提供一种蓝光吸收截止膜，由光刻胶材料形成，能够有效吸收蓝光显示装置中多余的蓝光而避免其整体显示效果偏蓝色，且制作方法简单。\n\n[0006]本发明的目的还在于提供一种蓝光显示装置，包括上述的蓝光吸收截止膜，能够有效吸收蓝光显示装置中多余的蓝光而避免其整体显示效果偏蓝色。\n\n[0007]为实现上述目的，本发明提供了一种蓝光吸收截止膜，其由光刻胶材料形成，所述光刻胶材料包括树脂、黄色颜料、分散剂、及光引发剂。\n\n[0008]所述光刻胶材料中，所述黄色颜料为偶氮类、色酚类、苯并咪唑酮类、或偶氮缩合类的黄色颜料。\n\n[0009]所述光刻胶材料中，所述树脂为甲基丙烯酸系树脂、或环氧系树脂。\n\n[0010]本发明还提供一种蓝光显示装置，包括蓝光光源、设于所述蓝光光源上方的光致发光彩色滤光片、及设于所述光致发光彩色滤光片上方的如上所述的蓝光吸收截止膜。\n\n[0011]所述光致发光彩色滤光片包括数个阵列排布的红色像素单元、绿色像素单元、及蓝色像素单元；\n\n[0012]所述蓝光吸收截止膜对应蓝色像素单元设有开口。\n\n[0013]所述光致发光彩色滤光片为量子点彩色滤光片；\n\n[0014]所述红色像素单元、绿色像素单元分别由红色量子点油墨材料、绿色量子点油墨材料经喷墨打印工艺形成，所述蓝色像素单元的材料为透明有机材料。\n\n[0015]所述光致发光彩色滤光片为荧光染料彩色滤光片。\n\n[0016]所述蓝光吸收截止膜经图案化工艺形成，用于去除所述蓝光光源发出的穿过所述红色像素单元及绿色像素单元后未转化的蓝色荧光光线。\n\n[0017]所述蓝光吸收截止膜的制作方法具体包括如下步骤：\n\n[0018]步骤S1、由所述光刻胶材料涂布形成一层黄色膜层；\n\n[0019]步骤S2、在所述黄色膜层上涂布形成光阻层；\n\n[0020]步骤S3、提供掩膜板，利用所述掩膜板对所述光阻层进行曝光，对曝光后的光阻层进行显影，得到光阻图案层；\n\n[0021]步骤S4、以所述光阻图案层为遮蔽层，对所述黄色膜层进行蚀刻，得到图案化的蓝光吸收截止膜。\n\n[0022]所述的蓝光显示装置为液晶显示装置、微发光二极管显示装置、或有机发光二极管显示装置。\n\n[0023]本发明的有益效果：本发明的蓝光吸收截止膜，由光刻胶材料形成，所述光刻胶材料包括树脂、黄色颜料、分散剂、及光引发剂，能够有效吸收蓝光显示装置中多余的蓝光而避免其整体显示效果偏蓝色，且制作方法简单。本发明的蓝光显示装置，包括上述的蓝光吸收截止膜，能够有效吸收蓝光显示装置中多余的蓝光而避免其整体显示效果偏蓝色。\n\n附图说明\n\n[0024]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。\n\n[0025]附图中，\n\n[0026]图1为本发明的蓝光显示装置的结构示意图；\n\n[0027]图2为本发明的蓝光吸收截止膜的制作方法的步骤S1的示意图；\n\n[0028]图3为本发明的蓝光吸收截止膜的制作方法的步骤S2的示意图；\n\n[0029]图4-5为本发明的蓝光吸收截止膜的制作方法的步骤S3的示意图；\n\n[0030]图6为本发明的蓝光吸收截止膜的制作方法的步骤S4的示意图。\n\n具体实施方式\n\n[0031]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0032]本发明首先提供一种蓝光吸收截止膜，其由光刻胶材料形成，所述光刻胶材料包括树脂、黄色颜料、分散剂、及光引发剂。\n\n[0033]具体地，所述光刻胶材料中，所述黄色颜料为偶氮类(如汉沙黄10G、联苯胺黄)、色酚类(如永固黄)、苯并咪唑酮类(如C.I.颜料黄154)、或偶氮缩合类(如固美脱黄3G)的黄色颜料。\n\n[0034]具体地，所述光刻胶材料中，所述树脂为甲基丙烯酸系树脂、或环氧系树脂，即所述光刻胶材料为通过在甲基丙烯酸系树脂、或环氧系树脂中添加黄色颜料、分散剂、及光引发剂等所形成的材料。\n\n[0035]本发明的蓝光吸收截止膜，由光刻胶材料形成，所述光刻胶材料包括树脂、黄色颜料、分散剂、及光引发剂，其可以应用于一切通过蓝光过渡到其他颜色光而进行彩色显示的蓝光显示装置中，例如通过蓝光过渡到其他颜色光而进行彩色显示的液晶显示装置、微发光二极管(Micro LED)显示装置、及有机发光二极管显示装置(OLED)等，能够有效吸收蓝光显示装置中多余的蓝光而避免其整体显示效果偏蓝色，且制作方法简单。\n\n[0036]请参阅图1，基于上述的蓝光吸收截止膜，本发明还提供一种蓝光显示装置，包括蓝光光源10、设于所述蓝光光源10上方的光致发光彩色滤光片20、及设于所述光致发光彩色滤光片20上方的如上述的蓝光吸收截止膜30。\n\n[0037]具体地，所述光致发光彩色滤光片20包括数个阵列排布的红色像素单元21、绿色像素单元22、及蓝色像素单元23；所述蓝光吸收截止膜30对应蓝色像素单元23设有开口31。\n\n[0038]具体地，所述光致发光彩色滤光片20可以为量子点彩色滤光片，也可以为由荧光染料掺杂而形成的荧光染料彩色滤光片、或其他光致发光的彩色滤光片。\n\n[0039]具体地，所述蓝光吸收截止膜30经图案化工艺形成，用于去除所述蓝光光源10发出的穿过所述红色像素单元21及绿色像素单元22后未转化的蓝色荧光光线。\n\n[0040]具体地，所述蓝光吸收截止膜30的制作方法具体包括如下步骤：\n\n[0041]步骤S1、如图2所示，提供所述光刻胶材料，由所述光刻胶材料涂布形成一层能够吸收蓝光的黄色膜层35。\n\n[0042]步骤S2、如图3所示，在所述黄色膜层35上涂布形成光阻层55。\n\n[0043]步骤S3、如图4及图5所示，提供掩膜板70，利用所述掩膜板70对所述光阻层55进行曝光，对曝光后的光阻层55进行显影，得到光阻图案层50。\n\n[0044]步骤S4、如图6所示，以所述光阻图案层50为遮蔽层，对所述黄色膜层35进行蚀刻，得到图案化的蓝光吸收截止膜30，从而完成蓝光吸收截止膜30的制作。\n\n[0045]具体地，本发明的蓝光显示装置可以为任意一种通过蓝光过渡到其他颜色光而进行彩色显示的显示装置，例如通过蓝光过渡到其他颜色光而进行彩色显示的液晶显示装置、微发光二极管显示装置、及有机发光二极管显示装置等，其通过采用蓝光吸收截止膜30，能够有效吸收蓝光显示装置中多余的蓝光而避免其整体显示效果偏蓝色。\n\n[0046]具体地，在本发明的蓝光显示装置一优选实施例中，所述光致发光彩色滤光片20为量子点彩色滤光片，还包括黑色像素间隔层24，所述黑色像素间隔层24将所述红色像素单元21、绿色像素单元22、及蓝色像素单元23间隔开；所述红色像素单元21、绿色像素单元22分别由红色量子点油墨材料、绿色量子点油墨材料经喷墨打印工艺形成，所述蓝色像素单元23的材料为透明有机材料。所述蓝光显示装置为液晶显示装置，还包括上下相对设置的彩膜基板40与阵列基板(未图示)、及设于彩膜基板40与阵列基板之间的液晶层(未图示)，所述蓝光吸收截止膜30、光致发光彩色滤光片20依次设于所述彩膜基板40靠近液晶层的一侧，所述蓝光光源10作为背光光源，设于所述阵列基板的下方，为所述蓝光显示装置提供蓝色背光。所述蓝光光源10发出蓝色背光，所述蓝色背光穿过阵列基板与液晶层而照射在光致发光彩色滤光片20上，在蓝色背光的激发下，所述光致发光彩色滤光片20中，红色像素单元21内的红色量子点会发出半高宽很窄的红光，与未被吸收的蓝色背光形成混合光，该混合光随后经过蓝光吸收截止膜30后，其中的蓝色背光被吸收，从而被滤成高纯度的红色单色光而显红色；同理，蓝色背光经绿色像素单元22及蓝光吸收截止膜30后发出绿色单色光而显绿色；而对应蓝色像素单元23的位置由于采用透明有机材料制作且没有蓝光吸收截止膜30的覆盖而直接透过蓝色背光而显蓝色；最终提供了彩色显示所需的红、绿、蓝三原色，实现了彩色显示，并能够有效提高显示色域指数。\n\n[0047]综上所述，本发明的蓝光吸收截止膜，由光刻胶材料形成，所述光刻胶材料包括树脂、黄色颜料、分散剂、及光引发剂，能够有效吸收蓝光显示装置中多余的蓝光而避免其整体显示效果偏蓝色，且制作方法简单。本发明的蓝光显示装置，包括上述的蓝光吸收截止膜，能够有效吸收蓝光显示装置中多余的蓝光而避免其整体显示效果偏蓝色。\n\n[0048]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10596, 23650, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管的转移设备及转移方法。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但Micro LED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]在微发光二极管显示面板的制作过程中，微发光二极管必须先在原始基板(如蓝宝石类基板)上通过分子束外延的方法生长出来，而做成显示面板，还必须要把微发光二极管器件原始基板上转移到用于形成显示面板的接收基板上排成显示阵列，具体为：先原始基板上形成微发光二极管，随后通过激光剥离技术(Laser lift-off，LLO)等方法将微发光二极管从原始基板上剥离开，并使用一个采用诸如聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)等材料制作的转移头，如将微发光二极管从原始基板上吸附到接收基板上预设的位置。\n\n[0005]现有技术中，用于微发光二极管转移的转移头通常是通过静电力吸附微发光二极管来完成微发光二极管转移的，该方法对转移头与被转移对象之间的间隙有着严格要求，若出现转移间隙的偏差，就会导致转移失效而造成显示面板缺陷。\n\n发明内容\n\n[0006]本发明的目的在于提供一种微发光二极管的转移设备，能够降低微发光二极管的转移难度，提升微发光二极管的转移效率。\n\n[0007]本发明的目的还在于提供一种微发光二极管的转移方法，能够降低微发光二极管的转移难度，提升微发光二极管的转移效率。\n\n[0008]为实现上述目的，本发明提供了一种微发光二极管的转移设备，包括：本体、设于所述本体上的吐液模块、冷却模块和加热模块；\n\n[0009]所述吐液模块用于向待转移的微发光二极管吐出金属粘附液；\n\n[0010]所述冷却模块用于冷却待转移的微发光二极管上的金属粘附液，使得金属粘附液固化，将本体和待转移的微发光二极管粘结到一起；\n\n[0011]所述加热模块用于加热固化后的金属粘附液，使得金属粘附液熔化，分离本体和待转移的微发光二极管。\n\n[0012]所述本体包括：多个依次排列的转移头，每一个转移头的底部均设有吐液口，所述吐液模块通过吐液口向待转移的微发光二极管吐出金属粘附液。\n\n[0013]每一对相邻的转移头之间均设有吹气孔，所述冷却模块通过吹气孔向外吹气冷却待转移的微发光二极管上的金属粘附液。\n\n[0014]每一个转移头上均设有电阻加热体，所述加热模块通过向电阻加热体通电加热固化后的金属粘附液。\n\n[0015]所述吹气孔吹出的气体为氦气。\n\n[0016]本发明提供一种微发光二极管的转移方法，包括如下步骤：\n\n[0017]步骤S1、提供一转运基板，所述转运基板上设有微发光二极管；\n\n[0018]步骤S2、提供一微发光二极管的转移设备，所述微发光二极管的转移设备包括：本体、设于所述本体上的吐液模块、冷却模块和加热模块；\n\n[0019]步骤S3、所述吐液模块向微发光二极管上吐出金属粘附液，所述冷却模块冷却所述吐液模块吐出的金属粘附液，使得金属粘附液固化，将本体和微发光二极管粘结到一起；\n\n[0020]步骤S4、提供一接收基板，所述微发光二极管的转移设备将所述微发光二极管移动到接收基板上预设的邦定位置，所述加热模块加热所述固化后的金属粘附液，使得金属粘附液熔化，分离本体和微发光二极管，从而将所述微发光二极管转移到接收基板上。\n\n[0021]所述本体包括：多个依次排列的转移头，每一个转移头的底部均设有吐液口，所述步骤S3中吐液模块通过吐液口向微发光二极管上吐出金属粘附液。\n\n[0022]每一对相邻的转移头之间均设有吹气孔，所述步骤S3中冷却模块通过吹气孔向外吹气冷却吐液模块吐出的金属粘附液。\n\n[0023]每一个转移头上均设有电阻加热体，所述步骤S4中加热模块通过向电阻加热体通电加热固化后的金属粘附液。\n\n[0024]所述步骤S3中所述吹气孔吹出的气体为氦气。\n\n[0025]本发明的有益效果：本发明提供一种微发光二极管的转移设备，所述微发光二极管的转移设备包括：本体、设于所述本体上的吐液模块、冷却模块和加热模块，可通过吐液模块向待转移的微发光二极管吐出金属粘附液，通过冷却模块冷却待转移的微发光二极管上的金属粘附液，使得金属粘附液固化，将本体和待转移的微发光二极管粘结到一起进行微发光二极管的转移，转移到位后通过加热模块加热固化后的金属粘附液，使得金属粘附液熔化，分离本体和待转移的微发光二极管，能够降低微发光二极管的转移难度，提升微发光二极管的转移效率。本发明还提供一种微发光二极管的转移方法，能够降低微发光二极管的转移难度，提升微发光二极管的转移效率。\n\n附图说明\n\n[0026]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0027]附图中，\n\n[0028]图1为本发明的微发光二极管的转移设备的模块示意图；\n\n[0029]图2为本发明的微发光二极管的转移设备的结构示意图；\n\n[0030]图3至图11为本发明的微发光二极管的转移方法中微发光二极管的制作过程的示意图；\n\n[0031]图12为本发明的微发光二极管的转移方法的步骤S1的示意图；\n\n[0032]图13为本发明的微发光二极管的转移方法的步骤S3的示意图；\n\n[0033]图14为本发明的微发光二极管的转移方法的步骤S4的示意图；\n\n[0034]图15为本发明的微发光二极管的转移方法中微发光二极管的封装过程的示意图；\n\n[0035]图16为本发明的微发光二极管的转移方法的流程图。\n\n具体实施方式\n\n[0036]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0037]请参阅图1，本发明提供一种微发光二极管的转移设备，包括：本体10、设于所述本体10上的吐液模块20、冷却模块30和加热模块40。\n\n[0038]其中，所述吐液模块20用于向待转移的微发光二极管吐出金属粘附液；所述冷却模块30用于冷却待转移的微发光二极管上的金属粘附液，使得金属粘附液固化，将本体10和待转移的微发光二极管粘结到一起；所述加热模块40用于加热固化后的金属粘附液，使得金属粘附液熔化，分离本体10和待转移的微发光二极管。\n\n[0039]具体地，如图2所示，所述本体10包括：多个依次排列的转移头101，每一个转移头101的底部均设有吐液口102，所述吐液模块20通过吐液口102向待转移的微发光二极管吐出金属粘附液。进一步地，如图2所示，在每一对相邻的转移头101之间还设有吹气孔103，所述冷却模块30通过吹气孔103向外吹气冷却待转移的微发光二极管上的金属粘附液。如图2所示，每一个转移头101上均设有电阻加热体104，所述加热模块40通过向电阻加热体104通电加热固化后的金属粘附液。\n\n[0040]优选地，所述吹气孔103吹出的气体为氦气，所述电阻加热体104的材料为钨，所述金属粘附液可选择铟(In)、镓(Ga)、铅(Pb)、及锡(Sn)等低熔点金属及其合金。\n\n[0041]上述微发光二极管的转移设备，在微发光二极管转移时先将本体10与待转移的微发光二极管通过固化的金属粘附液粘结到一起，在微发光二极管转移完毕后融化金属粘附液使微发光二极管与本体10分离，相较于现有的采用静电力吸附微发光二极管的转移设备，能够降低微发光二极管的转移难度，提升微发光二极管的转移效率。\n\n[0042]请参阅图16，本发明还提供一种微发光二极管的转移方法，包括如下步骤：\n\n[0043]步骤S1、请参阅图12，提供一转运基板8，所述转运基板8上设有微发光二极管100。\n\n[0044]具体地，所述步骤S1之前还包括一制作并转运所述微发光二极管100至转运基板8上的过程，具体包括：请参阅图3，首先提供一原始基板1，在所述原始基板1上的形成LED半导体薄膜2’，在所述LED半导体薄膜2’上形成图案化的第一光阻层10’；接着，请参阅图4，以所述第一光阻层10’为遮挡，对所述LED半导体薄膜2’进行刻蚀，形成LED半导体层2；然后，请参阅图5和图6，在所述LED半导体层2和原始基板1上覆盖第一绝缘层3，在所述第一绝缘层3上形成图案化的第二光阻层20’；随后，请参阅图7，以第二光阻层20’为遮挡，对所述第一绝缘层3进行刻蚀，形成贯穿所述第二绝缘层3的第一通孔4和第二通孔5，所述第一通孔4和第二通孔5分别暴露出所述LED半导体层2的一部分以及原始基板1的一部分；接着，请参阅图8和图9，在所述第一绝缘层3、LED半导体层2、及原始基板1上形成第一金属薄膜6’，在所述第一金属薄膜6’上形成图案化的第三光阻层30’；接着，请参阅图10，以第三光阻层30’为遮挡，对所述第一金属薄膜6’进行刻蚀，形成底电极6，所述底电极6通过第一通孔4与LED半导体层2接触，制得微发光二极管100，最后，请参阅图11，提供一转运基板8，将所述转运基板8表面与底电极6粘合，剥离所述原始基板1，使得微发光二极管100转移到转运基板8上，暴露出所述LED半导体层2与原始基板1接触的一侧表面。\n\n[0045]进一步地，所述微发光二极管100为未进行封装的半成品，所述原始基板1可以蓝宝石基板(Al2O3)、硅基板(Si)、碳化硅基板(SiC)、或氮化镓基板(GaN)等，所述LED半导体层2包括：N+层、P+层、以及与N+层和P+层接触的多量子井层。所述底电极6的材料可以为镍、钼、铝、金、铂、及钛等金属中的一种或多种的组合。所述第一绝缘层3的材料为氧化硅、氮化硅、或氧化铝等。\n\n[0046]具体地，所述转运基板8为表面设有粘合层的硬质基板，通过所述硬质基板表面的粘合层粘合底电极6，使得底电极6与转运基板8相连，再通过激光剥离工艺去除原始基板1，使得微发光二极管100转移到转运基板8上，且所述微发光二极管100上下倒转，也即所述LED半导体层2与所述原始基板1接触的一侧表面远离所述转运基板8，以暴露出LED半导体层2与原始基板1接触的一侧表面。\n\n[0047]步骤S2、请参阅图1，提供一微发光二极管的转移设备，所述微发光二极管的转移设备包括：本体10、设于所述本体10上的吐液模块20、冷却模块30和加热模块40。\n\n[0048]具体地，如图2所示，所述本体10包括：多个依次排列的转移头101，每一个转移头101的底部均设有吐液口102，每一对相邻的两转移头101之间均设有吹气孔103，每一个转移头101上均设有电阻加热体104。\n\n[0049]步骤S3、如图13所示，所述吐液模块20向微发光二极管100上吐出金属粘附液，所述冷却模块30冷却所述吐液模块20吐出的金属粘附液，使得金属粘附液固化，将本体10和微发光二极管100粘结到一起。\n\n[0050]具体地，所述步骤S3具体包括：首先将所述微发光二极管的转移设备移动到所述微发光二极管100上方0至2微米的位置，随后所述吐液模块20通过吐液口102向所述微发光二极管100的LED半导体层2上吐出金属粘附液，接着，所述吹气孔103向外吹气，使得金属粘附液固化，将本体10和微发光二极管100粘结到一起。优选地，所述吹气孔103向外吹出的气体为氦气(He)。\n\n[0051]优选地，所述金属粘附液可选择铟(In)、镓(Ga)、铅(Pb)、及锡(Sn)等低熔点金属及其合金。\n\n[0052]步骤S4、如图14所示，提供一接收基板400，所述微发光二极管的转移设备将所述微发光二极管100移动到接收基板400上预设的邦定位置，所述加热模块40加热所述固化后的金属粘附液，使得金属粘附液熔化，分离本体10和微发光二极管100，从而将所述微发光二极管100转移到接收基板400上。\n\n[0053]具体地，如图14所示，所述接收基板400包括：衬底基板41、设于所述衬底基板41上的像素定义层42、形成于所述像素定义层42中的像素凹槽15、设于所述像素凹槽15底部的底电极触点43、设于所述像素凹槽15一侧的像素定义层42上的顶电极触点44。当然所述接收基板400还可以包括薄膜晶体管等驱动器件，这些都可以采用现有技术，此处不再赘述。\n\n[0054]具体地，所述步骤S4具体包括：先将所述微发光二极管100移动到像素凹槽15内的底电极触点43上，随后所述加热模块40向所述电阻加热体104通电，使得电阻加热体104温度上升，加热所述固化后的金属粘附液，使金属粘附液熔化，分离本体10和微发光二极管100，所述底电极6与底电极触点43邦定到一起。优选地，所述电阻加热体104的材料为钨。\n\n[0055]具体地，所述底电极6与底电极触点43邦定的过程为，在底电极6与底电极触点43接触时与先加热熔化所述底电极触点43，随后再冷却固化所述底电极触点43，进而将所述底电极6与底电极触点43邦定到一起。优选地，所述底电极触点43的材料为铅或锡等低熔点金属。\n\n[0056]进一步地，所述微发光二极管100转移到接收基板400上还需要对所述微发光二极管100进行封装，所述封装过程具体包括：请参阅图15，首先，在所述像素定义层42之间填充封装胶材7，使得封装胶材7的上表面与所述像素定义层42平齐，接着在所述微发光二极管100、像素定义层42、封装胶材7和顶电极触点44上沉积导电薄膜，然后对所述导电薄膜进行图案化，得到与所述LED半导体层2和顶电极触点44接触的顶电极8，最后在所述顶电极8、像素定义层42和封装胶材7上形成保护层9。\n\n[0057]具体地，所述顶电极8为透明电极，材料为氧化铟锡(ITO)、氧化铟锌(IZO)、银纳米线、或聚乙撑二氧噻吩和聚苯乙烯磺酸的混合物(PEDOT：PSS)等。所述保护层9不仅具有保护功能，同时还具有辅助散热和光提取的功能。\n\n[0058]上述微发光二极管的转移方法，采用包括本体10、吐液模块20、冷却模块30、加热模块40的微发光二极管的转移设备对微发光二极管100进行转移，在微发光二极管100转移时先将本体10与微发光二极管100通过固化的金属粘附液粘结到一起，在微发光二极管100转移至接收基板400后融化金属粘附液使微发光二极管100与本体10分离，相较于现有的采用静电力吸附微发光二极管对其进行转移的方法，能够降低微发光二极管100的转移难度，提升微发光二极管100的转移效率。\n\n[0059]综上所述，本发明提供一种微发光二极管的转移设备，所述微发光二极管的转移设备包括：本体、设于所述本体上的吐液模块、冷却模块和加热模块，可通过吐液模块向待转移的微发光二极管吐出金属粘附液，通过冷却模块冷却待转移的微发光二极管上的金属粘附液，使得金属粘附液固化，将本体和待转移的微发光二极管粘结到一起进行微发光二极管的转移，转移到位后通过加热模块加热固化后的金属粘附液，使得金属粘附液熔化，分离本体和待转移的微发光二极管，能够降低微发光二极管的转移难度，提升微发光二极管的转移效率。本发明还提供一种微发光二极管的转移方法，能够降低微发光二极管的转移难度，提升微发光二极管的转移效率。\n\n[0060]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管的转移设备及转移方法。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但Micro LED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]在微发光二极管显示面板的制作过程中，微发光二极管必须先在原始基板(如蓝宝石类基板)上通过分子束外延的方法生长出来，而做成显示面板，还必须要把微发光二极管器件原始基板上转移到用于形成显示面板的接收基板上排成显示阵列，具体为：先原始基板上形成微发光二极管，随后通过激光剥离技术(Laser lift-off，LLO)等方法将微发光二极管从原始基板上剥离开，并使用一个采用诸如聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)等材料制作的转移头，如将微发光二极管从原始基板上吸附到接收基板上预设的位置。\n\n[0005]现有技术中，用于微发光二极管转移的转移头通常是通过静电力吸附微发光二极管来完成微发光二极管转移的，该方法对转移头与被转移对象之间的间隙有着严格要求，若出现转移间隙的偏差，就会导致转移失效而造成显示面板缺陷。\n\n发明内容\n\n[0006]本发明的目的在于提供一种微发光二极管的转移设备，能够降低微发光二极管的转移难度，提升微发光二极管的转移效率。\n\n[0007]本发明的目的还在于提供一种微发光二极管的转移方法，能够降低微发光二极管的转移难度，提升微发光二极管的转移效率。\n\n[0008]为实现上述目的，本发明提供了一种微发光二极管的转移设备，包括：本体、设于所述本体上的吐液模块、冷却模块和加热模块；\n\n[0009]所述吐液模块用于向待转移的微发光二极管吐出金属粘附液；\n\n[0010]所述冷却模块用于冷却待转移的微发光二极管上的金属粘附液，使得金属粘附液固化，将本体和待转移的微发光二极管粘结到一起；\n\n[0011]所述加热模块用于加热固化后的金属粘附液，使得金属粘附液熔化，分离本体和待转移的微发光二极管。\n\n[0012]所述本体包括：多个依次排列的转移头，每一个转移头的底部均设有吐液口，所述吐液模块通过吐液口向待转移的微发光二极管吐出金属粘附液。\n\n[0013]每一对相邻的转移头之间均设有吹气孔，所述冷却模块通过吹气孔向外吹气冷却待转移的微发光二极管上的金属粘附液。\n\n[0014]每一个转移头上均设有电阻加热体，所述加热模块通过向电阻加热体通电加热固化后的金属粘附液。\n\n[0015]所述吹气孔吹出的气体为氦气。\n\n[0016]本发明提供一种微发光二极管的转移方法，包括如下步骤：\n\n[0017]步骤S1、提供一转运基板，所述转运基板上设有微发光二极管；\n\n[0018]步骤S2、提供一微发光二极管的转移设备，所述微发光二极管的转移设备包括：本体、设于所述本体上的吐液模块、冷却模块和加热模块；\n\n[0019]步骤S3、所述吐液模块向微发光二极管上吐出金属粘附液，所述冷却模块冷却所述吐液模块吐出的金属粘附液，使得金属粘附液固化，将本体和微发光二极管粘结到一起；\n\n[0020]步骤S4、提供一接收基板，所述微发光二极管的转移设备将所述微发光二极管移动到接收基板上预设的邦定位置，所述加热模块加热所述固化后的金属粘附液，使得金属粘附液熔化，分离本体和微发光二极管，从而将所述微发光二极管转移到接收基板上。\n\n[0021]所述本体包括：多个依次排列的转移头，每一个转移头的底部均设有吐液口，所述步骤S3中吐液模块通过吐液口向微发光二极管上吐出金属粘附液。\n\n[0022]每一对相邻的转移头之间均设有吹气孔，所述步骤S3中冷却模块通过吹气孔向外吹气冷却吐液模块吐出的金属粘附液。\n\n[0023]每一个转移头上均设有电阻加热体，所述步骤S4中加热模块通过向电阻加热体通电加热固化后的金属粘附液。\n\n[0024]所述步骤S3中所述吹气孔吹出的气体为氦气。\n\n[0025]本发明的有益效果：本发明提供一种微发光二极管的转移设备，所述微发光二极管的转移设备包括：本体、设于所述本体上的吐液模块、冷却模块和加热模块，可通过吐液模块向待转移的微发光二极管吐出金属粘附液，通过冷却模块冷却待转移的微发光二极管上的金属粘附液，使得金属粘附液固化，将本体和待转移的微发光二极管粘结到一起进行微发光二极管的转移，转移到位后通过加热模块加热固化后的金属粘附液，使得金属粘附液熔化，分离本体和待转移的微发光二极管，能够降低微发光二极管的转移难度，提升微发光二极管的转移效率。本发明还提供一种微发光二极管的转移方法，能够降低微发光二极管的转移难度，提升微发光二极管的转移效率。\n\n附图说明\n\n[0026]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0027]附图中，\n\n[0028]图1为本发明的微发光二极管的转移设备的模块示意图；\n\n[0029]图2为本发明的微发光二极管的转移设备的结构示意图；\n\n[0030]图3至图11为本发明的微发光二极管的转移方法中微发光二极管的制作过程的示意图；\n\n[0031]图12为本发明的微发光二极管的转移方法的步骤S1的示意图；\n\n[0032]图13为本发明的微发光二极管的转移方法的步骤S3的示意图；\n\n[0033]图14为本发明的微发光二极管的转移方法的步骤S4的示意图；\n\n[0034]图15为本发明的微发光二极管的转移方法中微发光二极管的封装过程的示意图；\n\n[0035]图16为本发明的微发光二极管的转移方法的流程图。\n\n具体实施方式\n\n[0036]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0037]请参阅图1，本发明提供一种微发光二极管的转移设备，包括：本体10、设于所述本体10上的吐液模块20、冷却模块30和加热模块40。\n\n[0038]其中，所述吐液模块20用于向待转移的微发光二极管吐出金属粘附液；所述冷却模块30用于冷却待转移的微发光二极管上的金属粘附液，使得金属粘附液固化，将本体10和待转移的微发光二极管粘结到一起；所述加热模块40用于加热固化后的金属粘附液，使得金属粘附液熔化，分离本体10和待转移的微发光二极管。\n\n[0039]具体地，如图2所示，所述本体10包括：多个依次排列的转移头101，每一个转移头101的底部均设有吐液口102，所述吐液模块20通过吐液口102向待转移的微发光二极管吐出金属粘附液。进一步地，如图2所示，在每一对相邻的转移头101之间还设有吹气孔103，所述冷却模块30通过吹气孔103向外吹气冷却待转移的微发光二极管上的金属粘附液。如图2所示，每一个转移头101上均设有电阻加热体104，所述加热模块40通过向电阻加热体104通电加热固化后的金属粘附液。\n\n[0040]优选地，所述吹气孔103吹出的气体为氦气，所述电阻加热体104的材料为钨，所述金属粘附液可选择铟(In)、镓(Ga)、铅(Pb)、及锡(Sn)等低熔点金属及其合金。\n\n[0041]上述微发光二极管的转移设备，在微发光二极管转移时先将本体10与待转移的微发光二极管通过固化的金属粘附液粘结到一起，在微发光二极管转移完毕后融化金属粘附液使微发光二极管与本体10分离，相较于现有的采用静电力吸附微发光二极管的转移设备，能够降低微发光二极管的转移难度，提升微发光二极管的转移效率。\n\n[0042]请参阅图16，本发明还提供一种微发光二极管的转移方法，包括如下步骤：\n\n[0043]步骤S1、请参阅图12，提供一转运基板8，所述转运基板8上设有微发光二极管100。\n\n[0044]具体地，所述步骤S1之前还包括一制作并转运所述微发光二极管100至转运基板8上的过程，具体包括：请参阅图3，首先提供一原始基板1，在所述原始基板1上的形成LED半导体薄膜2’，在所述LED半导体薄膜2’上形成图案化的第一光阻层10’；接着，请参阅图4，以所述第一光阻层10’为遮挡，对所述LED半导体薄膜2’进行刻蚀，形成LED半导体层2；然后，请参阅图5和图6，在所述LED半导体层2和原始基板1上覆盖第一绝缘层3，在所述第一绝缘层3上形成图案化的第二光阻层20’；随后，请参阅图7，以第二光阻层20’为遮挡，对所述第一绝缘层3进行刻蚀，形成贯穿所述第二绝缘层3的第一通孔4和第二通孔5，所述第一通孔4和第二通孔5分别暴露出所述LED半导体层2的一部分以及原始基板1的一部分；接着，请参阅图8和图9，在所述第一绝缘层3、LED半导体层2、及原始基板1上形成第一金属薄膜6’，在所述第一金属薄膜6’上形成图案化的第三光阻层30’；接着，请参阅图10，以第三光阻层30’为遮挡，对所述第一金属薄膜6’进行刻蚀，形成底电极6，所述底电极6通过第一通孔4与LED半导体层2接触，制得微发光二极管100，最后，请参阅图11，提供一转运基板8，将所述转运基板8表面与底电极6粘合，剥离所述原始基板1，使得微发光二极管100转移到转运基板8上，暴露出所述LED半导体层2与原始基板1接触的一侧表面。\n\n[0045]进一步地，所述微发光二极管100为未进行封装的半成品，所述原始基板1可以蓝宝石基板(Al2O3)、硅基板(Si)、碳化硅基板(SiC)、或氮化镓基板(GaN)等，所述LED半导体层2包括：N+层、P+层、以及与N+层和P+层接触的多量子井层。所述底电极6的材料可以为镍、钼、铝、金、铂、及钛等金属中的一种或多种的组合。所述第一绝缘层3的材料为氧化硅、氮化硅、或氧化铝等。\n\n[0046]具体地，所述转运基板8为表面设有粘合层的硬质基板，通过所述硬质基板表面的粘合层粘合底电极6，使得底电极6与转运基板8相连，再通过激光剥离工艺去除原始基板1，使得微发光二极管100转移到转运基板8上，且所述微发光二极管100上下倒转，也即所述LED半导体层2与所述原始基板1接触的一侧表面远离所述转运基板8，以暴露出LED半导体层2与原始基板1接触的一侧表面。\n\n[0047]步骤S2、请参阅图1，提供一微发光二极管的转移设备，所述微发光二极管的转移设备包括：本体10、设于所述本体10上的吐液模块20、冷却模块30和加热模块40。\n\n[0048]具体地，如图2所示，所述本体10包括：多个依次排列的转移头101，每一个转移头101的底部均设有吐液口102，每一对相邻的两转移头101之间均设有吹气孔103，每一个转移头101上均设有电阻加热体104。\n\n[0049]步骤S3、如图13所示，所述吐液模块20向微发光二极管100上吐出金属粘附液，所述冷却模块30冷却所述吐液模块20吐出的金属粘附液，使得金属粘附液固化，将本体10和微发光二极管100粘结到一起。\n\n[0050]具体地，所述步骤S3具体包括：首先将所述微发光二极管的转移设备移动到所述微发光二极管100上方0至2微米的位置，随后所述吐液模块20通过吐液口102向所述微发光二极管100的LED半导体层2上吐出金属粘附液，接着，所述吹气孔103向外吹气，使得金属粘附液固化，将本体10和微发光二极管100粘结到一起。优选地，所述吹气孔103向外吹出的气体为氦气(He)。\n\n[0051]优选地，所述金属粘附液可选择铟(In)、镓(Ga)、铅(Pb)、及锡(Sn)等低熔点金属及其合金。\n\n[0052]步骤S4、如图14所示，提供一接收基板400，所述微发光二极管的转移设备将所述微发光二极管100移动到接收基板400上预设的邦定位置，所述加热模块40加热所述固化后的金属粘附液，使得金属粘附液熔化，分离本体10和微发光二极管100，从而将所述微发光二极管100转移到接收基板400上。\n\n[0053]具体地，如图14所示，所述接收基板400包括：衬底基板41、设于所述衬底基板41上的像素定义层42、形成于所述像素定义层42中的像素凹槽15、设于所述像素凹槽15底部的底电极触点43、设于所述像素凹槽15一侧的像素定义层42上的顶电极触点44。当然所述接收基板400还可以包括薄膜晶体管等驱动器件，这些都可以采用现有技术，此处不再赘述。\n\n[0054]具体地，所述步骤S4具体包括：先将所述微发光二极管100移动到像素凹槽15内的底电极触点43上，随后所述加热模块40向所述电阻加热体104通电，使得电阻加热体104温度上升，加热所述固化后的金属粘附液，使金属粘附液熔化，分离本体10和微发光二极管100，所述底电极6与底电极触点43邦定到一起。优选地，所述电阻加热体104的材料为钨。\n\n[0055]具体地，所述底电极6与底电极触点43邦定的过程为，在底电极6与底电极触点43接触时与先加热熔化所述底电极触点43，随后再冷却固化所述底电极触点43，进而将所述底电极6与底电极触点43邦定到一起。优选地，所述底电极触点43的材料为铅或锡等低熔点金属。\n\n[0056]进一步地，所述微发光二极管100转移到接收基板400上还需要对所述微发光二极管100进行封装，所述封装过程具体包括：请参阅图15，首先，在所述像素定义层42之间填充封装胶材7，使得封装胶材7的上表面与所述像素定义层42平齐，接着在所述微发光二极管100、像素定义层42、封装胶材7和顶电极触点44上沉积导电薄膜，然后对所述导电薄膜进行图案化，得到与所述LED半导体层2和顶电极触点44接触的顶电极8，最后在所述顶电极8、像素定义层42和封装胶材7上形成保护层9。\n\n[0057]具体地，所述顶电极8为透明电极，材料为氧化铟锡(ITO)、氧化铟锌(IZO)、银纳米线、或聚乙撑二氧噻吩和聚苯乙烯磺酸的混合物(PEDOT：PSS)等。所述保护层9不仅具有保护功能，同时还具有辅助散热和光提取的功能。\n\n[0058]上述微发光二极管的转移方法，采用包括本体10、吐液模块20、冷却模块30、加热模块40的微发光二极管的转移设备对微发光二极管100进行转移，在微发光二极管100转移时先将本体10与微发光二极管100通过固化的金属粘附液粘结到一起，在微发光二极管100转移至接收基板400后融化金属粘附液使微发光二极管100与本体10分离，相较于现有的采用静电力吸附微发光二极管对其进行转移的方法，能够降低微发光二极管100的转移难度，提升微发光二极管100的转移效率。\n\n[0059]综上所述，本发明提供一种微发光二极管的转移设备，所述微发光二极管的转移设备包括：本体、设于所述本体上的吐液模块、冷却模块和加热模块，可通过吐液模块向待转移的微发光二极管吐出金属粘附液，通过冷却模块冷却待转移的微发光二极管上的金属粘附液，使得金属粘附液固化，将本体和待转移的微发光二极管粘结到一起进行微发光二极管的转移，转移到位后通过加热模块加热固化后的金属粘附液，使得金属粘附液熔化，分离本体和待转移的微发光二极管，能够降低微发光二极管的转移难度，提升微发光二极管的转移效率。本发明还提供一种微发光二极管的转移方法，能够降低微发光二极管的转移难度，提升微发光二极管的转移效率。\n\n[0060]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10597, 23651, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微转印方法。\n\n背景技术\n\n[0002]微发光二极管(Micro LED)是一种尺寸在几微米到几百微米之间的器件，由于其较普通LED的尺寸要小很多，从而使得单一的LED作为像素(Pixel)用于显示成为可能，Micro LED显示器便是一种以高密度的Micro LED阵列作为显示像素阵列来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但Micro LED显示器相比于OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0003]由于晶格匹配的原因，Micro LED器件必须先在蓝宝石类的供给基板上通过分子束外延的方法生长出来，随后通过激光剥离(Laser lift-off，LLO)技术将微发光二极管裸芯片(bare chip)从供给基板上分离开，然后通过微转印(Micro Transfer Print)技术将其转移到已经预先制备完成电路图案的接受基板上，形成Micro LED阵列，进而做成MicroLED显示面板。其中，微转印Micro LED阵列的基本原理大致为：使用具有图案化的传送头(Transfer)，例如具有凸起结构的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)类传送头，通过具有粘性的PDMS传送层(Transfer layer)将Micro LED bare chip从供给基板吸附起来，然后将PDMS传送头与接受基板进行对位，随后将PDMS传送头所吸附的Micro LEDbare chip贴附到接受基板预设的位置上，再将PDMS传送头从接受基板上剥离，即可完成Micro LED bare chip的转移，形成Micro LED阵列。\n\n[0004]目前，来自爱尔兰的X-celeprint、美国德州大学等都曾发表过有关Micro LED显示器的研究成果。苹果公司于2014年正式收购具有Micro LED技术的LuxVue后，引发业界开始关注于Micro LED的技术优势，LuxVue与X-Celeprint所使用的微转移技术差别较大，X-Celeprint主要利用PDMS等膜层结构的吸附力进行转移动作，而LuxVue通过在传送头的凸起上通电，利用静电力来吸附Micro LED等器件。\n\n[0005]不论采用何种方式进行吸附的Transfer，Transfer的转移良率和速度都是技术的关键点，在现有微转印方法的Transfer移动过程中，Transfer从提供零部件的衬底上吸附起例如LED、集成电路芯片(IC)等微米尺寸的零部件时，其实际是克服地球重力和衬底的吸附力，而在移动和转移的过程中，也时刻受到地球重力影响；假设Transfer移动速度较快，则可能导致在移动过程中Micro LED等器件从Transfer上脱落，而为了提高Transfer过程中的稳定性，则又可能牺牲Transfer的速度继而影响产能。\n\n发明内容\n\n[0006]本发明的目的在于提供一种微转印方法，可有效提高传送头的转移良率和速率。\n\n[0007]为实现上述目的，本发明提供了一种微转印方法，包括如下步骤：\n\n[0008]步骤S1、提供传送头、及载体基板，所述传送头具有数个拾取凸起，每一拾取凸起均具有吸附面，所述载体基板上设有数个微部件，将所述传送头放置于所述载体基板上，此时所述拾取凸起的吸附面朝向下方，使得所述拾取凸起的吸附面与载体基板上的微部件相接触，即利用所述传送头的拾取凸起吸附载体基板上的微部件；\n\n[0009]步骤S2、将传送头与载体基板上下翻转，此时所述传送头位于所述载体基板的下方，所述拾取凸起的吸附面朝向上方，然后将传送头与载体基板分离，此时所述传送头承载着所述步骤S1中被拾取凸起吸附的微部件；\n\n[0010]步骤S3、提供接受基板，将承载有微部件的传送头转移到所述接受基板的上方，然后将传送头上下翻转，此时所述传送头位于所述接受基板的上方，所述拾取凸起的吸附面朝向下方，将拾取凸起吸附的微部件置于接受基板上。\n\n[0011]所述步骤S1中提供的传送头中，每一拾取凸起的吸附面上均设有挡墙。\n\n[0012]每一拾取凸起上的挡墙均设于相应吸附面的至少一侧边上。\n\n[0013]所述步骤S2中，每一拾取凸起上吸附的微部件的高度均大于该拾取凸起上挡墙的高度。\n\n[0014]所述传送头上的挡墙通过光刻制程制作形成。\n\n[0015]所述微部件为微发光二极管。\n\n[0016]所述微部件具有金属电极，所述步骤S3中提供的接受基板为TFT阵列基板。\n\n[0017]所述步骤S3还包括将微部件的金属电极与接受基板导通，并使得所述微部件固定于所述接受基板上。\n\n[0018]所述微部件为微集成电路芯片。\n\n[0019]所述传送头为PDMS传送头，所述拾取凸起为PDMS材料，所述步骤S1中通过拾取凸起的粘性吸附微部件。\n\n[0020]本发明的有益效果：本发明提供了一种微转印方法，利用传送头的拾取凸起吸附载体基板上的微部件后，将传送头与载体基板上下翻转，使所述传送头位于载体基板的下方；然后将传送头与载体基板分离，使传送头承载着被拾取凸起吸附的微部件；然后将承载有微部件的传送头转移到接受基板的上方，再将传送头上下翻转，将拾取凸起吸附的微部件置于接受基板上；本发明的微转印方法，在传送头转移微部件的过程中，微部件承载于传送头上，相对于现有技术，传送头对微部件的吸附不再需要克服重力的影响，继而在保证传送头对微部件稳定转移的情况下，可以对传送头进行快速移动，有效提高了传送头的转移良率和速率。\n\n附图说明\n\n[0021]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0022]附图中，\n\n[0023]图1为本发明的微转印方法的流程示意图；\n\n[0024]图2-3为本发明的微转印方法的步骤S1的示意图；\n\n[0025]图4-6为本发明的微转印方法的步骤S2的示意图；\n\n[0026]图7-9为本发明的微转印方法的步骤S3的示意图；\n\n[0027]图10为本发明的微转印方法中传送头上一拾取凸起的放大示意图；\n\n[0028]图11为本发明的微转印方法的步骤S3中传送头转移微器件时对应一拾取凸起处的示意图；\n\n[0029]图12为本发明的微转印方法中一拾取凸起上挡墙设于相应吸附面的相对两侧边上的示意图；\n\n[0030]图13为本发明的微转印方法中一拾取凸起上挡墙设于相应吸附面的四周侧边上的示意图。\n\n具体实施方式\n\n[0031]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0032]请参阅图1，本发明提供一种微转印方法，包括如下步骤：\n\n[0033]步骤S1、如图2-3所示，提供传送头50、及载体基板10，所述传送头50具有数个拾取凸起51，每一拾取凸起51均具有吸附面511，所述载体基板10上设有数个微部件40，将所述传送头50放置于所述载体基板10上，此时所述拾取凸起51的吸附面511朝向下方，使得所述拾取凸起51的吸附面511与载体基板10上的微部件40相接触，即利用所述传送头50的拾取凸起51吸附载体基板10上的微部件40。\n\n[0034]步骤S2、如图4-6所示，将传送头50与载体基板10上下翻转，此时所述传送头50位于所述载体基板10的下方，所述拾取凸起51的吸附面511朝向上方，然后将传送头50与载体基板10分离，此时所述传送头50承载着所述步骤S1中被拾取凸起51吸附的微部件40。\n\n[0035]步骤S3、如图7-9所示，提供接受基板20，将承载有微部件40的传送头50转移到所述接受基板20的上方，然后将传送头50上下翻转，此时所述传送头50位于所述接受基板20的上方，所述拾取凸起51的吸附面511朝向下方，将拾取凸起51吸附的微部件40置于接受基板20上。\n\n[0036]本发明的微转印方法，在传送头50转移微部件40的过程中，微部件40承载于传送头50上，相对于现有技术，传送头50对微部件40的吸附不再需要克服重力的影响，继而在步骤S3中，在保证传送头50对微部件40稳定转移的情况下，可以对传送头50进行快速移动，有效提高了传送头50的转移良率和速率。\n\n[0037]具体地，每一拾取凸起51的吸附面511的尺寸均大于其所吸附的微部件40的尺寸，如图10所示，所述步骤S1中提供的传送头50中，每一拾取凸起51的吸附面511的边缘上均设有挡墙512，从而在传送头50对微部件40转移过程中，即使微部件40发生偶尔的晃动，由于挡墙512的阻挡作用，微部件40也不会从拾取凸起51上脱落。\n\n[0038]进一步地，每一拾取凸起51上的挡墙512可设于相应吸附面511四侧边中的某一边上、某两边上、某三边上、或是四周侧边上；例如，如图12所示，每一拾取凸起51上的挡墙512设于相应吸附面511的相对两侧边上；又例如，如图13所示，每一拾取凸起51上的挡墙512设于相应吸附面511的四周侧边上，从而形成可包围微部件40的结构。\n\n[0039]具体地，所述传送头50上的挡墙512通过光刻制程在传送头50成型过程中制作形成。\n\n[0040]具体地，如图11所示，所述步骤S2中，每一拾取凸起51上吸附的微部件40的高度均大于该拾取凸起51上挡墙512的高度；从而在所述步骤S3中，将传送头50上下翻转后，挡墙512不会阻碍微部件40放置在接受基板20上，进而避免影响微部件40与接受基板20的绑定(Bonding)。\n\n[0041]具体地，所述微部件40为微发光二极管，具有金属电极41，所述步骤S3中提供的接受基板20为TFT阵列基板。进一步地，所述步骤S3还包括将微部件40的金属电极41与接受基板20导通，并使得所述微部件40固定于所述接受基板20上，即将微部件40也即微发光二极管与接受基板20进行绑定。\n\n[0042]除此之外，所述微部件40也可以为其他微米尺寸或更小尺寸的器件，例如微集成电路芯片。\n\n[0043]具体地，所述传送头50为PDMS传送头，所述拾取凸起51为PDMS材料，所述步骤S1中通过拾取凸起51的粘性吸附微部件40。除此之外，所述传送头50还可以为其他类型的传送头，比如通过静电力来进行拾取的传送头。\n\n[0044]综上所述，本发明提供了一种微转印方法，利用传送头的拾取凸起吸附载体基板上的微部件后，将传送头与载体基板上下翻转，使所述传送头位于载体基板的下方；然后将传送头与载体基板分离，使传送头承载着被拾取凸起吸附的微部件；然后将承载有微部件的传送头转移到接受基板的上方，再将传送头上下翻转，将拾取凸起吸附的微部件置于接受基板上；本发明的微转印方法，在传送头转移微部件的过程中，微部件承载于传送头上，相对于现有技术，传送头对微部件的吸附不再需要克服重力的影响，继而在保证传送头对微部件稳定转移的情况下，可以对传送头进行快速移动，有效提高了传送头的转移良率和速率。\n\n[0045]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微转印方法。\n\n背景技术\n\n[0002]微发光二极管(Micro LED)是一种尺寸在几微米到几百微米之间的器件，由于其较普通LED的尺寸要小很多，从而使得单一的LED作为像素(Pixel)用于显示成为可能，Micro LED显示器便是一种以高密度的Micro LED阵列作为显示像素阵列来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但Micro LED显示器相比于OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0003]由于晶格匹配的原因，Micro LED器件必须先在蓝宝石类的供给基板上通过分子束外延的方法生长出来，随后通过激光剥离(Laser lift-off，LLO)技术将微发光二极管裸芯片(bare chip)从供给基板上分离开，然后通过微转印(Micro Transfer Print)技术将其转移到已经预先制备完成电路图案的接受基板上，形成Micro LED阵列，进而做成MicroLED显示面板。其中，微转印Micro LED阵列的基本原理大致为：使用具有图案化的传送头(Transfer)，例如具有凸起结构的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)类传送头，通过具有粘性的PDMS传送层(Transfer layer)将Micro LED bare chip从供给基板吸附起来，然后将PDMS传送头与接受基板进行对位，随后将PDMS传送头所吸附的Micro LEDbare chip贴附到接受基板预设的位置上，再将PDMS传送头从接受基板上剥离，即可完成Micro LED bare chip的转移，形成Micro LED阵列。\n\n[0004]目前，来自爱尔兰的X-celeprint、美国德州大学等都曾发表过有关Micro LED显示器的研究成果。苹果公司于2014年正式收购具有Micro LED技术的LuxVue后，引发业界开始关注于Micro LED的技术优势，LuxVue与X-Celeprint所使用的微转移技术差别较大，X-Celeprint主要利用PDMS等膜层结构的吸附力进行转移动作，而LuxVue通过在传送头的凸起上通电，利用静电力来吸附Micro LED等器件。\n\n[0005]不论采用何种方式进行吸附的Transfer，Transfer的转移良率和速度都是技术的关键点，在现有微转印方法的Transfer移动过程中，Transfer从提供零部件的衬底上吸附起例如LED、集成电路芯片(IC)等微米尺寸的零部件时，其实际是克服地球重力和衬底的吸附力，而在移动和转移的过程中，也时刻受到地球重力影响；假设Transfer移动速度较快，则可能导致在移动过程中Micro LED等器件从Transfer上脱落，而为了提高Transfer过程中的稳定性，则又可能牺牲Transfer的速度继而影响产能。\n\n发明内容\n\n[0006]本发明的目的在于提供一种微转印方法，可有效提高传送头的转移良率和速率。\n\n[0007]为实现上述目的，本发明提供了一种微转印方法，包括如下步骤：\n\n[0008]步骤S1、提供传送头、及载体基板，所述传送头具有数个拾取凸起，每一拾取凸起均具有吸附面，所述载体基板上设有数个微部件，将所述传送头放置于所述载体基板上，此时所述拾取凸起的吸附面朝向下方，使得所述拾取凸起的吸附面与载体基板上的微部件相接触，即利用所述传送头的拾取凸起吸附载体基板上的微部件；\n\n[0009]步骤S2、将传送头与载体基板上下翻转，此时所述传送头位于所述载体基板的下方，所述拾取凸起的吸附面朝向上方，然后将传送头与载体基板分离，此时所述传送头承载着所述步骤S1中被拾取凸起吸附的微部件；\n\n[0010]步骤S3、提供接受基板，将承载有微部件的传送头转移到所述接受基板的上方，然后将传送头上下翻转，此时所述传送头位于所述接受基板的上方，所述拾取凸起的吸附面朝向下方，将拾取凸起吸附的微部件置于接受基板上。\n\n[0011]所述步骤S1中提供的传送头中，每一拾取凸起的吸附面上均设有挡墙。\n\n[0012]每一拾取凸起上的挡墙均设于相应吸附面的至少一侧边上。\n\n[0013]所述步骤S2中，每一拾取凸起上吸附的微部件的高度均大于该拾取凸起上挡墙的高度。\n\n[0014]所述传送头上的挡墙通过光刻制程制作形成。\n\n[0015]所述微部件为微发光二极管。\n\n[0016]所述微部件具有金属电极，所述步骤S3中提供的接受基板为TFT阵列基板。\n\n[0017]所述步骤S3还包括将微部件的金属电极与接受基板导通，并使得所述微部件固定于所述接受基板上。\n\n[0018]所述微部件为微集成电路芯片。\n\n[0019]所述传送头为PDMS传送头，所述拾取凸起为PDMS材料，所述步骤S1中通过拾取凸起的粘性吸附微部件。\n\n[0020]本发明的有益效果：本发明提供了一种微转印方法，利用传送头的拾取凸起吸附载体基板上的微部件后，将传送头与载体基板上下翻转，使所述传送头位于载体基板的下方；然后将传送头与载体基板分离，使传送头承载着被拾取凸起吸附的微部件；然后将承载有微部件的传送头转移到接受基板的上方，再将传送头上下翻转，将拾取凸起吸附的微部件置于接受基板上；本发明的微转印方法，在传送头转移微部件的过程中，微部件承载于传送头上，相对于现有技术，传送头对微部件的吸附不再需要克服重力的影响，继而在保证传送头对微部件稳定转移的情况下，可以对传送头进行快速移动，有效提高了传送头的转移良率和速率。\n\n附图说明\n\n[0021]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0022]附图中，\n\n[0023]图1为本发明的微转印方法的流程示意图；\n\n[0024]图2-3为本发明的微转印方法的步骤S1的示意图；\n\n[0025]图4-6为本发明的微转印方法的步骤S2的示意图；\n\n[0026]图7-9为本发明的微转印方法的步骤S3的示意图；\n\n[0027]图10为本发明的微转印方法中传送头上一拾取凸起的放大示意图；\n\n[0028]图11为本发明的微转印方法的步骤S3中传送头转移微器件时对应一拾取凸起处的示意图；\n\n[0029]图12为本发明的微转印方法中一拾取凸起上挡墙设于相应吸附面的相对两侧边上的示意图；\n\n[0030]图13为本发明的微转印方法中一拾取凸起上挡墙设于相应吸附面的四周侧边上的示意图。\n\n具体实施方式\n\n[0031]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0032]请参阅图1，本发明提供一种微转印方法，包括如下步骤：\n\n[0033]步骤S1、如图2-3所示，提供传送头50、及载体基板10，所述传送头50具有数个拾取凸起51，每一拾取凸起51均具有吸附面511，所述载体基板10上设有数个微部件40，将所述传送头50放置于所述载体基板10上，此时所述拾取凸起51的吸附面511朝向下方，使得所述拾取凸起51的吸附面511与载体基板10上的微部件40相接触，即利用所述传送头50的拾取凸起51吸附载体基板10上的微部件40。\n\n[0034]步骤S2、如图4-6所示，将传送头50与载体基板10上下翻转，此时所述传送头50位于所述载体基板10的下方，所述拾取凸起51的吸附面511朝向上方，然后将传送头50与载体基板10分离，此时所述传送头50承载着所述步骤S1中被拾取凸起51吸附的微部件40。\n\n[0035]步骤S3、如图7-9所示，提供接受基板20，将承载有微部件40的传送头50转移到所述接受基板20的上方，然后将传送头50上下翻转，此时所述传送头50位于所述接受基板20的上方，所述拾取凸起51的吸附面511朝向下方，将拾取凸起51吸附的微部件40置于接受基板20上。\n\n[0036]本发明的微转印方法，在传送头50转移微部件40的过程中，微部件40承载于传送头50上，相对于现有技术，传送头50对微部件40的吸附不再需要克服重力的影响，继而在步骤S3中，在保证传送头50对微部件40稳定转移的情况下，可以对传送头50进行快速移动，有效提高了传送头50的转移良率和速率。\n\n[0037]具体地，每一拾取凸起51的吸附面511的尺寸均大于其所吸附的微部件40的尺寸，如图10所示，所述步骤S1中提供的传送头50中，每一拾取凸起51的吸附面511的边缘上均设有挡墙512，从而在传送头50对微部件40转移过程中，即使微部件40发生偶尔的晃动，由于挡墙512的阻挡作用，微部件40也不会从拾取凸起51上脱落。\n\n[0038]进一步地，每一拾取凸起51上的挡墙512可设于相应吸附面511四侧边中的某一边上、某两边上、某三边上、或是四周侧边上；例如，如图12所示，每一拾取凸起51上的挡墙512设于相应吸附面511的相对两侧边上；又例如，如图13所示，每一拾取凸起51上的挡墙512设于相应吸附面511的四周侧边上，从而形成可包围微部件40的结构。\n\n[0039]具体地，所述传送头50上的挡墙512通过光刻制程在传送头50成型过程中制作形成。\n\n[0040]具体地，如图11所示，所述步骤S2中，每一拾取凸起51上吸附的微部件40的高度均大于该拾取凸起51上挡墙512的高度；从而在所述步骤S3中，将传送头50上下翻转后，挡墙512不会阻碍微部件40放置在接受基板20上，进而避免影响微部件40与接受基板20的绑定(Bonding)。\n\n[0041]具体地，所述微部件40为微发光二极管，具有金属电极41，所述步骤S3中提供的接受基板20为TFT阵列基板。进一步地，所述步骤S3还包括将微部件40的金属电极41与接受基板20导通，并使得所述微部件40固定于所述接受基板20上，即将微部件40也即微发光二极管与接受基板20进行绑定。\n\n[0042]除此之外，所述微部件40也可以为其他微米尺寸或更小尺寸的器件，例如微集成电路芯片。\n\n[0043]具体地，所述传送头50为PDMS传送头，所述拾取凸起51为PDMS材料，所述步骤S1中通过拾取凸起51的粘性吸附微部件40。除此之外，所述传送头50还可以为其他类型的传送头，比如通过静电力来进行拾取的传送头。\n\n[0044]综上所述，本发明提供了一种微转印方法，利用传送头的拾取凸起吸附载体基板上的微部件后，将传送头与载体基板上下翻转，使所述传送头位于载体基板的下方；然后将传送头与载体基板分离，使传送头承载着被拾取凸起吸附的微部件；然后将承载有微部件的传送头转移到接受基板的上方，再将传送头上下翻转，将拾取凸起吸附的微部件置于接受基板上；本发明的微转印方法，在传送头转移微部件的过程中，微部件承载于传送头上，相对于现有技术，传送头对微部件的吸附不再需要克服重力的影响，继而在保证传送头对微部件稳定转移的情况下，可以对传送头进行快速移动，有效提高了传送头的转移良率和速率。\n\n[0045]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10598, 23652, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管阵列基板的封装结构及其封装方法。\n\n背景技术\n\n[0002]微发光二极管(Micro LED)是一种尺寸在几微米到几百微米之间的器件，由于其较普通LED的尺寸要小很多，从而使得单一的LED作为像素(Pixel)用于显示成为可能，Micro LED显示器便是一种以高密度的Micro LED阵列作为显示像素阵列来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但Micro LED显示器相比于OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0003]由于晶格匹配的原因，Micro LED器件必须先在蓝宝石类的供给基板上通过分子束外延的方法生长出来，随后通过激光剥离(Laser lift-off，LLO)技术将微发光二极管裸芯片(bare chip)从供给基板上分离开，然后通过微转印(Micro Transfer Print，NTP)技术将其转移到已经预先制备完成电路图案的接受基板上，形成Micro LED阵列，进而做成Micro LED显示面板。其中，微转印的基本原理大致为：使用具有图案化的传送头(Transferhead)，例如具有凸起结构的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)类传送头，通过具有粘性的PDMS传送层(Transfer layer)将Micro LED bare chip从供给基板吸附起来，然后将PDMS传送头与接受基板进行对位，随后将PDMS传送头所吸附的Micro LED barechip贴附到接受基板预设的位置上，再将PDMS传送头从接受基板上剥离，即可完成MicroLED bare chip的转移，形成Micro LED阵列基板，进一步地，所述接受基板是已经预先制备完成电路图案的硅基板，其可以为柔性也可以为刚性。\n\n[0004]在现有Micro LED显示面板的制作过程中，为了保护Micro LED及其下方的驱动基板，并改善Micro LED阵列的发光效果，提出一种新的Micro LED阵列基板的封装结构及其封装方法，是本领域亟需解决的技术问题之一。\n\n发明内容\n\n[0005]本发明的目的在于提供一种微发光二极管阵列基板的封装结构，能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果。\n\n[0006]本发明的目的还在于提供一种微发光二极管阵列基板的封装方法，能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果。\n\n[0007]为实现上述目的，本发明提供了一种微发光二极管阵列基板的封装结构，包括基板、设于所述基板上的微发光二极管阵列、设于所述基板上的光阻保护层；\n\n[0008]所述微发光二极管阵列包括数个阵列排布的微发光二极管；所述光阻保护层对应所述数个微发光二极管的位置设有数个阵列排布的过孔，所述数个微发光二极管分别位于所述数个过孔当中；\n\n[0009]每一过孔内均填充有一个上表面呈凸起状的UV树脂微透镜；每一UV树脂微透镜分别覆盖相应过孔内的微发光二极管。\n\n[0010]所述光阻保护层的材料与UV树脂微透镜的材料分别为疏水材料和亲水材料中的一种；\n\n[0011]所述光阻保护层的材料与UV树脂微透镜的材料均为透明材料。\n\n[0012]所述光阻保护层的厚度大于所述微发光二极管的高度的1/3。\n\n[0013]每一过孔分别与一个或多个微发光二极管相对应，即每一过孔内分别容置有一个或多个微发光二极管。\n\n[0014]所述过孔的形状为长方形、圆形、或椭圆形。\n\n[0015]本发明还提供一种微发光二极管阵列基板的封装方法，包括如下步骤：\n\n[0016]步骤S1、提供基板，所述基板上设有微发光二极管阵列，在所述基板、及微发光二极管阵列上涂布形成一层光阻层；\n\n[0017]所述微发光二极管阵列包括数个阵列排布的微发光二极管；\n\n[0018]步骤S2、利用掩膜板对所述光阻层进行曝光显影，在对应所述数个微发光二极管的位置形成数个阵列排布的过孔，得到光阻保护层，所述数个微发光二极管分别位于所述数个过孔当中；\n\n[0019]步骤S3、向所述数个过孔内喷涂UV树脂微液滴，使得每一过孔内均具有UV树脂材料，且每一过孔内的UV树脂材料的上表面均呈凸起状，然后对所述数个过孔内的UV树脂材料进行紫外光固化，使得每一过孔内的UV树脂材料由液态变为固态，对应每一过孔得到一个上表面呈凸起状的UV树脂微透镜，每一UV树脂微透镜分别覆盖相应过孔内的微发光二极管。\n\n[0020]所述步骤S3中通过喷墨打印设备的喷印头向所述数个过孔内喷涂UV树脂微液滴，所述喷印头的直径小于所述过孔的最大孔径。\n\n[0021]所述光阻保护层的材料与UV树脂微透镜的材料分别为疏水材料和亲水材料中的一种；\n\n[0022]所述光阻保护层的材料与UV树脂微透镜的材料均为透明材料。\n\n[0023]所述光阻保护层的厚度大于所述微发光二极管的高度的1/3。\n\n[0024]所述步骤S2形成的数个过孔中，每一过孔分别与一个或多个微发光二极管相对应，即每一过孔内分别容置有一个或多个微发光二极管；所述过孔的形状为长方形、圆形、或椭圆形。\n\n[0025]本发明的有益效果：本发明的微发光二极管阵列基板的封装结构，包括基板、微发光二极管阵列、及光阻保护层；所述微发光二极管阵列包括数个阵列排布的微发光二极管；所述光阻保护层对应所述数个微发光二极管的位置设有数个阵列排布的过孔，所述数个微发光二极管分别位于所述数个过孔当中；每一过孔内均填充有一个上表面呈凸起状的并覆盖相应过孔内微发光二极管的UV树脂微透镜；能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果。本发明的微发光二极管阵列基板的封装方法，能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果，且方法简单易行。\n\n附图说明\n\n[0026]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0027]附图中，\n\n[0028]图1为本发明微发光二极管阵列基板的封装结构的示意图；\n\n[0029]图2为本发明微发光二极管阵列基板的封装结构中光阻保护层上一种形状的过孔的排布示意图；\n\n[0030]图3为本发明微发光二极管阵列基板的封装结构中光阻保护层上另一种形状的过孔的排布示意图；\n\n[0031]图4为本发明微发光二极管阵列基板的封装方法的流程示意图；\n\n[0032]图5为本发明微发光二极管阵列基板的封装方法的步骤S1的示意图；\n\n[0033]图6为本发明微发光二极管阵列基板的封装方法的步骤S2的示意图。\n\n具体实施方式\n\n[0034]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0035]请参阅图1，本发明首先提供一种微发光二极管阵列基板的封装结构，包括基板1、设于所述基板1上的微发光二极管阵列3、设于所述基板1上的光阻保护层2；\n\n[0036]所述微发光二极管阵列3包括数个阵列排布的微发光二极管31；所述光阻保护层2对应所述数个微发光二极管31的位置设有数个阵列排布的过孔21，所述数个微发光二极管31分别位于所述数个过孔21当中；\n\n[0037]每一过孔21内均填充有一个上表面呈凸起状的UV树脂微透镜41；每一UV树脂微透镜41分别覆盖相应过孔21内的微发光二极管31，从而所有的UV树脂微透镜41构成UV树脂微透镜阵列。\n\n[0038]本发明的微发光二极管阵列基板的封装结构，基板1上的光阻保护层2与UV树脂微透镜41共同起到保护微发光二极管31、及基板1的作用，且所述UV树脂微透镜41可对微发光二极管31发出的光线进行光路调节，同时所述UV树脂微透镜阵列也有利于通过计算机模拟进行预设计，从而通过对UV树脂微透镜41的厚度及尺寸的调整可得到需要的光型分布，进而能够改善微发光二极管阵列基板的发光效果。\n\n[0039]具体地，所述光阻保护层2的材料与UV树脂微透镜41的材料均为透明材料。\n\n[0040]具体地，所述光阻保护层2的材料与UV树脂微透镜41的材料分别为疏水材料和亲水材料中的一种，即光阻保护层2的材料与UV树脂微透镜41的材料亲疏水性总是相反，那么UV树脂微透镜41的材料与光阻保护层2之间便会存在相排斥的力；进一步地，所述UV树脂微透镜41经由低粘度高透过率的UV树脂材料在相应过孔21内经紫外光(UV)固化形成，从而在UV树脂微透镜41制作过程中，每一过孔21内填充的UV树脂材料在与光阻保护层2表面之间所存在的斥力、及其本身界面张力的共同作用下，上表面会呈现出凸起状，那么经紫外光固化后便可形成上表面呈凸起状的UV树脂微透镜41。例如当光阻保护层2的材料为疏水材料，而用于形成UV树脂微透镜41的UV树脂材料具有亲水特性时，由于光阻保护层2表面的疏水性和UV树脂材料本身界面张力的存在，使得每一过孔21内的UV树脂材料的上表面均呈凸起状，进而使得UV树脂微透镜41具有呈凸起状的上表面。\n\n[0041]具体地，所述光阻保护层2的厚度大于所述微发光二极管31的高度的1/3，即使得光阻保护层2上的过孔21具有足够的深度，从而在UV树脂微透镜41的制作过程中，用于形成UV树脂微透镜41的UV树脂材料被限定在特定的过孔21当中。\n\n[0042]具体地，所述基板1为TFT阵列基板，以对其上的微发光二极管阵列3进行驱动，从而所述微发光二极管阵列基板的封装结构，可进一步用于制作微发光二极管显示器。\n\n[0043]具体地，每一过孔21分别与一个或多个微发光二极管31相对应，即每一过孔21内分别容置有一个或多个微发光二极管31，也即每一过孔21可以对应于微发光二极管显示器中的一个或多个的子像素(sub-pixel)单元，也可以是对应于一个或多个的像素(pixel)单元。\n\n[0044]具体地，所述过孔21的形状为长方形、圆形、或椭圆形等形状；例如，如图2所示，所述过孔21的形状为长方形，每一过孔21可分别与一个或多个微发光二极管31相对应；或者，如图3所示，所述过孔21的形状为椭圆形，每一过孔21同样也可分别与一个或多个微发光二极管31相对应。\n\n[0045]请参阅图4，基于上述的微发光二极管阵列基板的封装结构，本发明还提供一种微发光二极管阵列基板的封装方法，包括如下步骤：\n\n[0046]步骤S1、如图5所示，提供基板1，所述基板1上设有微发光二极管阵列3，在所述基板1、及微发光二极管阵列3上涂布形成一层透明的光阻层2’。\n\n[0047]具体地，所述微发光二极管阵列3包括数个阵列排布的微发光二极管31。\n\n[0048]具体地，所述基板1为TFT阵列基板，以对其上的微发光二极管阵列3进行驱动，从而所述微发光二极管阵列基板进行封装后，可进一步用于制作微发光二极管显示器。\n\n[0049]步骤S2、如图6所示，利用掩膜板对所述光阻层2进行曝光显影，在对应所述数个微发光二极管31的位置形成数个阵列排布的过孔21，得到光阻保护层2，所述数个微发光二极管31分别位于所述数个过孔21当中。\n\n[0050]具体地，所述步骤S2形成的数个过孔21中，每一过孔21分别与一个或多个微发光二极管31相对应，即每一过孔21内分别容置有一个或多个微发光二极管31；所述过孔21的形状为长方形、圆形、或椭圆形。\n\n[0051]步骤S3、向所述数个过孔21内喷涂UV树脂微液滴，使得每一过孔21内均具有UV树脂材料，且每一过孔21内的UV树脂材料的上表面均呈凸起状，然后对所述数个过孔21内的UV树脂材料进行紫外光固化，使得每一过孔21内的UV树脂材料由液态变为固态，对应每一过孔21得到一个上表面呈凸起状的UV树脂微透镜41，每一UV树脂微透镜41分别覆盖相应过孔21内的微发光二极管31，从而得到如图1所示的微发光二极管阵列基板的封装结构。\n\n[0052]本发明的微发光二极管阵列基板的封装方法，基板1上的光阻保护层2与UV树脂微透镜41共同起到保护微发光二极管31、及基板1的作用，且所述UV树脂微透镜41可对微发光二极管31发出的光线进行光路调节，从而通过对UV树脂微透镜41的厚度及尺寸的调整可得到需要的光型分布，进而能够改善微发光二极管阵列基板的发光效果。\n\n[0053]具体地，所述步骤S3中通过喷墨打印设备的喷印头向所述数个过孔21内喷涂UV树脂微液滴，所述喷印头的直径小于所述过孔21的最大孔径。\n\n[0054]具体地，所述步骤S3中，所述喷墨打印设备采用连续性喷墨打印系统向所述数个过孔21内喷涂UV树脂微液滴，每一过孔21内的UV树脂微透镜41的厚度可以通过在相应过孔21内喷涂UV树脂微液滴的数量进行调整，而每一过孔21内喷涂UV树脂微液滴的数量可通过连续性喷墨打印系统中计算机分析得出。\n\n[0055]具体地，所述光阻保护层2的材料与UV树脂微透镜41的材料分别为疏水材料和亲水材料中的一种；即所述光阻保护层2的材料与用于形成所述UV树脂微透镜41的UV树脂材料的亲疏水性相反，那么UV树脂材料与光阻保护层2之间便会存在相排斥的力。从而在所述步骤S3中，每一过孔21内填充的UV树脂材料在与光阻保护层2表面之间所存在的斥力、及其本身界面张力的共同作用下，上表面会呈现出凸起状，经紫外光固化后便可形成上表面呈凸起状的UV树脂微透镜41。例如当光阻保护层2的材料为疏水材料，而用于形成UV树脂微透镜41的UV树脂材料具有亲水特性时，由于光阻保护层2表面的疏水性和UV树脂材料本身界面张力的存在，使得每一过孔21内的UV树脂材料的上表面均呈凸起状，进而使得UV树脂微透镜41具有呈凸起状的上表面。\n\n[0056]具体地，所述步骤S1形成的光阻层2’的厚度大于微发光二极管31的高度的1/3，也即步骤S2得到的光阻保护层2的厚度大于所述微发光二极管31的高度的1/3，从而使得光阻保护层2上的过孔21具有足够的深度，在UV树脂微透镜41的制作过程中，用于形成UV树脂微透镜41的UV树脂材料被限定在特定的过孔21当中。\n\n[0057]综上所述，本发明的微发光二极管阵列基板的封装结构，包括基板、微发光二极管阵列、及光阻保护层；所述微发光二极管阵列包括数个阵列排布的微发光二极管；所述光阻保护层对应所述数个微发光二极管的位置设有数个阵列排布的过孔，所述数个微发光二极管分别位于所述数个过孔当中；每一过孔内均填充有一个上表面呈凸起状的并覆盖相应过孔内微发光二极管的UV树脂微透镜；能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果。本发明的微发光二极管阵列基板的封装方法，能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果，且方法简单易行。\n\n[0058]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管阵列基板的封装结构及其封装方法。\n\n背景技术\n\n[0002]微发光二极管(Micro LED)是一种尺寸在几微米到几百微米之间的器件，由于其较普通LED的尺寸要小很多，从而使得单一的LED作为像素(Pixel)用于显示成为可能，Micro LED显示器便是一种以高密度的Micro LED阵列作为显示像素阵列来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但Micro LED显示器相比于OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0003]由于晶格匹配的原因，Micro LED器件必须先在蓝宝石类的供给基板上通过分子束外延的方法生长出来，随后通过激光剥离(Laser lift-off，LLO)技术将微发光二极管裸芯片(bare chip)从供给基板上分离开，然后通过微转印(Micro Transfer Print，NTP)技术将其转移到已经预先制备完成电路图案的接受基板上，形成Micro LED阵列，进而做成Micro LED显示面板。其中，微转印的基本原理大致为：使用具有图案化的传送头(Transferhead)，例如具有凸起结构的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)类传送头，通过具有粘性的PDMS传送层(Transfer layer)将Micro LED bare chip从供给基板吸附起来，然后将PDMS传送头与接受基板进行对位，随后将PDMS传送头所吸附的Micro LED barechip贴附到接受基板预设的位置上，再将PDMS传送头从接受基板上剥离，即可完成MicroLED bare chip的转移，形成Micro LED阵列基板，进一步地，所述接受基板是已经预先制备完成电路图案的硅基板，其可以为柔性也可以为刚性。\n\n[0004]在现有Micro LED显示面板的制作过程中，为了保护Micro LED及其下方的驱动基板，并改善Micro LED阵列的发光效果，提出一种新的Micro LED阵列基板的封装结构及其封装方法，是本领域亟需解决的技术问题之一。\n\n发明内容\n\n[0005]本发明的目的在于提供一种微发光二极管阵列基板的封装结构，能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果。\n\n[0006]本发明的目的还在于提供一种微发光二极管阵列基板的封装方法，能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果。\n\n[0007]为实现上述目的，本发明提供了一种微发光二极管阵列基板的封装结构，包括基板、设于所述基板上的微发光二极管阵列、设于所述基板上的光阻保护层；\n\n[0008]所述微发光二极管阵列包括数个阵列排布的微发光二极管；所述光阻保护层对应所述数个微发光二极管的位置设有数个阵列排布的过孔，所述数个微发光二极管分别位于所述数个过孔当中；\n\n[0009]每一过孔内均填充有一个上表面呈凸起状的UV树脂微透镜；每一UV树脂微透镜分别覆盖相应过孔内的微发光二极管。\n\n[0010]所述光阻保护层的材料与UV树脂微透镜的材料分别为疏水材料和亲水材料中的一种；\n\n[0011]所述光阻保护层的材料与UV树脂微透镜的材料均为透明材料。\n\n[0012]所述光阻保护层的厚度大于所述微发光二极管的高度的1/3。\n\n[0013]每一过孔分别与一个或多个微发光二极管相对应，即每一过孔内分别容置有一个或多个微发光二极管。\n\n[0014]所述过孔的形状为长方形、圆形、或椭圆形。\n\n[0015]本发明还提供一种微发光二极管阵列基板的封装方法，包括如下步骤：\n\n[0016]步骤S1、提供基板，所述基板上设有微发光二极管阵列，在所述基板、及微发光二极管阵列上涂布形成一层光阻层；\n\n[0017]所述微发光二极管阵列包括数个阵列排布的微发光二极管；\n\n[0018]步骤S2、利用掩膜板对所述光阻层进行曝光显影，在对应所述数个微发光二极管的位置形成数个阵列排布的过孔，得到光阻保护层，所述数个微发光二极管分别位于所述数个过孔当中；\n\n[0019]步骤S3、向所述数个过孔内喷涂UV树脂微液滴，使得每一过孔内均具有UV树脂材料，且每一过孔内的UV树脂材料的上表面均呈凸起状，然后对所述数个过孔内的UV树脂材料进行紫外光固化，使得每一过孔内的UV树脂材料由液态变为固态，对应每一过孔得到一个上表面呈凸起状的UV树脂微透镜，每一UV树脂微透镜分别覆盖相应过孔内的微发光二极管。\n\n[0020]所述步骤S3中通过喷墨打印设备的喷印头向所述数个过孔内喷涂UV树脂微液滴，所述喷印头的直径小于所述过孔的最大孔径。\n\n[0021]所述光阻保护层的材料与UV树脂微透镜的材料分别为疏水材料和亲水材料中的一种；\n\n[0022]所述光阻保护层的材料与UV树脂微透镜的材料均为透明材料。\n\n[0023]所述光阻保护层的厚度大于所述微发光二极管的高度的1/3。\n\n[0024]所述步骤S2形成的数个过孔中，每一过孔分别与一个或多个微发光二极管相对应，即每一过孔内分别容置有一个或多个微发光二极管；所述过孔的形状为长方形、圆形、或椭圆形。\n\n[0025]本发明的有益效果：本发明的微发光二极管阵列基板的封装结构，包括基板、微发光二极管阵列、及光阻保护层；所述微发光二极管阵列包括数个阵列排布的微发光二极管；所述光阻保护层对应所述数个微发光二极管的位置设有数个阵列排布的过孔，所述数个微发光二极管分别位于所述数个过孔当中；每一过孔内均填充有一个上表面呈凸起状的并覆盖相应过孔内微发光二极管的UV树脂微透镜；能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果。本发明的微发光二极管阵列基板的封装方法，能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果，且方法简单易行。\n\n附图说明\n\n[0026]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0027]附图中，\n\n[0028]图1为本发明微发光二极管阵列基板的封装结构的示意图；\n\n[0029]图2为本发明微发光二极管阵列基板的封装结构中光阻保护层上一种形状的过孔的排布示意图；\n\n[0030]图3为本发明微发光二极管阵列基板的封装结构中光阻保护层上另一种形状的过孔的排布示意图；\n\n[0031]图4为本发明微发光二极管阵列基板的封装方法的流程示意图；\n\n[0032]图5为本发明微发光二极管阵列基板的封装方法的步骤S1的示意图；\n\n[0033]图6为本发明微发光二极管阵列基板的封装方法的步骤S2的示意图。\n\n具体实施方式\n\n[0034]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0035]请参阅图1，本发明首先提供一种微发光二极管阵列基板的封装结构，包括基板1、设于所述基板1上的微发光二极管阵列3、设于所述基板1上的光阻保护层2；\n\n[0036]所述微发光二极管阵列3包括数个阵列排布的微发光二极管31；所述光阻保护层2对应所述数个微发光二极管31的位置设有数个阵列排布的过孔21，所述数个微发光二极管31分别位于所述数个过孔21当中；\n\n[0037]每一过孔21内均填充有一个上表面呈凸起状的UV树脂微透镜41；每一UV树脂微透镜41分别覆盖相应过孔21内的微发光二极管31，从而所有的UV树脂微透镜41构成UV树脂微透镜阵列。\n\n[0038]本发明的微发光二极管阵列基板的封装结构，基板1上的光阻保护层2与UV树脂微透镜41共同起到保护微发光二极管31、及基板1的作用，且所述UV树脂微透镜41可对微发光二极管31发出的光线进行光路调节，同时所述UV树脂微透镜阵列也有利于通过计算机模拟进行预设计，从而通过对UV树脂微透镜41的厚度及尺寸的调整可得到需要的光型分布，进而能够改善微发光二极管阵列基板的发光效果。\n\n[0039]具体地，所述光阻保护层2的材料与UV树脂微透镜41的材料均为透明材料。\n\n[0040]具体地，所述光阻保护层2的材料与UV树脂微透镜41的材料分别为疏水材料和亲水材料中的一种，即光阻保护层2的材料与UV树脂微透镜41的材料亲疏水性总是相反，那么UV树脂微透镜41的材料与光阻保护层2之间便会存在相排斥的力；进一步地，所述UV树脂微透镜41经由低粘度高透过率的UV树脂材料在相应过孔21内经紫外光(UV)固化形成，从而在UV树脂微透镜41制作过程中，每一过孔21内填充的UV树脂材料在与光阻保护层2表面之间所存在的斥力、及其本身界面张力的共同作用下，上表面会呈现出凸起状，那么经紫外光固化后便可形成上表面呈凸起状的UV树脂微透镜41。例如当光阻保护层2的材料为疏水材料，而用于形成UV树脂微透镜41的UV树脂材料具有亲水特性时，由于光阻保护层2表面的疏水性和UV树脂材料本身界面张力的存在，使得每一过孔21内的UV树脂材料的上表面均呈凸起状，进而使得UV树脂微透镜41具有呈凸起状的上表面。\n\n[0041]具体地，所述光阻保护层2的厚度大于所述微发光二极管31的高度的1/3，即使得光阻保护层2上的过孔21具有足够的深度，从而在UV树脂微透镜41的制作过程中，用于形成UV树脂微透镜41的UV树脂材料被限定在特定的过孔21当中。\n\n[0042]具体地，所述基板1为TFT阵列基板，以对其上的微发光二极管阵列3进行驱动，从而所述微发光二极管阵列基板的封装结构，可进一步用于制作微发光二极管显示器。\n\n[0043]具体地，每一过孔21分别与一个或多个微发光二极管31相对应，即每一过孔21内分别容置有一个或多个微发光二极管31，也即每一过孔21可以对应于微发光二极管显示器中的一个或多个的子像素(sub-pixel)单元，也可以是对应于一个或多个的像素(pixel)单元。\n\n[0044]具体地，所述过孔21的形状为长方形、圆形、或椭圆形等形状；例如，如图2所示，所述过孔21的形状为长方形，每一过孔21可分别与一个或多个微发光二极管31相对应；或者，如图3所示，所述过孔21的形状为椭圆形，每一过孔21同样也可分别与一个或多个微发光二极管31相对应。\n\n[0045]请参阅图4，基于上述的微发光二极管阵列基板的封装结构，本发明还提供一种微发光二极管阵列基板的封装方法，包括如下步骤：\n\n[0046]步骤S1、如图5所示，提供基板1，所述基板1上设有微发光二极管阵列3，在所述基板1、及微发光二极管阵列3上涂布形成一层透明的光阻层2’。\n\n[0047]具体地，所述微发光二极管阵列3包括数个阵列排布的微发光二极管31。\n\n[0048]具体地，所述基板1为TFT阵列基板，以对其上的微发光二极管阵列3进行驱动，从而所述微发光二极管阵列基板进行封装后，可进一步用于制作微发光二极管显示器。\n\n[0049]步骤S2、如图6所示，利用掩膜板对所述光阻层2进行曝光显影，在对应所述数个微发光二极管31的位置形成数个阵列排布的过孔21，得到光阻保护层2，所述数个微发光二极管31分别位于所述数个过孔21当中。\n\n[0050]具体地，所述步骤S2形成的数个过孔21中，每一过孔21分别与一个或多个微发光二极管31相对应，即每一过孔21内分别容置有一个或多个微发光二极管31；所述过孔21的形状为长方形、圆形、或椭圆形。\n\n[0051]步骤S3、向所述数个过孔21内喷涂UV树脂微液滴，使得每一过孔21内均具有UV树脂材料，且每一过孔21内的UV树脂材料的上表面均呈凸起状，然后对所述数个过孔21内的UV树脂材料进行紫外光固化，使得每一过孔21内的UV树脂材料由液态变为固态，对应每一过孔21得到一个上表面呈凸起状的UV树脂微透镜41，每一UV树脂微透镜41分别覆盖相应过孔21内的微发光二极管31，从而得到如图1所示的微发光二极管阵列基板的封装结构。\n\n[0052]本发明的微发光二极管阵列基板的封装方法，基板1上的光阻保护层2与UV树脂微透镜41共同起到保护微发光二极管31、及基板1的作用，且所述UV树脂微透镜41可对微发光二极管31发出的光线进行光路调节，从而通过对UV树脂微透镜41的厚度及尺寸的调整可得到需要的光型分布，进而能够改善微发光二极管阵列基板的发光效果。\n\n[0053]具体地，所述步骤S3中通过喷墨打印设备的喷印头向所述数个过孔21内喷涂UV树脂微液滴，所述喷印头的直径小于所述过孔21的最大孔径。\n\n[0054]具体地，所述步骤S3中，所述喷墨打印设备采用连续性喷墨打印系统向所述数个过孔21内喷涂UV树脂微液滴，每一过孔21内的UV树脂微透镜41的厚度可以通过在相应过孔21内喷涂UV树脂微液滴的数量进行调整，而每一过孔21内喷涂UV树脂微液滴的数量可通过连续性喷墨打印系统中计算机分析得出。\n\n[0055]具体地，所述光阻保护层2的材料与UV树脂微透镜41的材料分别为疏水材料和亲水材料中的一种；即所述光阻保护层2的材料与用于形成所述UV树脂微透镜41的UV树脂材料的亲疏水性相反，那么UV树脂材料与光阻保护层2之间便会存在相排斥的力。从而在所述步骤S3中，每一过孔21内填充的UV树脂材料在与光阻保护层2表面之间所存在的斥力、及其本身界面张力的共同作用下，上表面会呈现出凸起状，经紫外光固化后便可形成上表面呈凸起状的UV树脂微透镜41。例如当光阻保护层2的材料为疏水材料，而用于形成UV树脂微透镜41的UV树脂材料具有亲水特性时，由于光阻保护层2表面的疏水性和UV树脂材料本身界面张力的存在，使得每一过孔21内的UV树脂材料的上表面均呈凸起状，进而使得UV树脂微透镜41具有呈凸起状的上表面。\n\n[0056]具体地，所述步骤S1形成的光阻层2’的厚度大于微发光二极管31的高度的1/3，也即步骤S2得到的光阻保护层2的厚度大于所述微发光二极管31的高度的1/3，从而使得光阻保护层2上的过孔21具有足够的深度，在UV树脂微透镜41的制作过程中，用于形成UV树脂微透镜41的UV树脂材料被限定在特定的过孔21当中。\n\n[0057]综上所述，本发明的微发光二极管阵列基板的封装结构，包括基板、微发光二极管阵列、及光阻保护层；所述微发光二极管阵列包括数个阵列排布的微发光二极管；所述光阻保护层对应所述数个微发光二极管的位置设有数个阵列排布的过孔，所述数个微发光二极管分别位于所述数个过孔当中；每一过孔内均填充有一个上表面呈凸起状的并覆盖相应过孔内微发光二极管的UV树脂微透镜；能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果。本发明的微发光二极管阵列基板的封装方法，能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果，且方法简单易行。\n\n[0058]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10599, 23653, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管阵列基板的封装结构。\n\n背景技术\n\n[0002]微发光二极管(Micro LED)是一种尺寸在几微米到几百微米之间的器件，由于其较普通LED的尺寸要小很多，从而使得单一的LED作为像素(Pixel)用于显示成为可能，Micro LED显示器便是一种以高密度的Micro LED阵列作为显示像素阵列来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但Micro LED显示器相比于OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0003]由于晶格匹配的原因，Micro LED器件必须先在蓝宝石类的供给基板上通过分子束外延的方法生长出来，随后通过激光剥离(Laser lift-off，LLO)技术将微发光二极管裸芯片(bare chip)从供给基板上分离开，然后通过微转印(Micro Transfer Print，NTP)技术将其转移到已经预先制备完成电路图案的接受基板上，形成Micro LED阵列，进而做成Micro LED显示面板。其中，微转印的基本原理大致为：使用具有图案化的传送头(Transferhead)，例如具有凸起结构的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)类传送头，通过具有粘性的PDMS传送层(Transfer layer)将Micro LED bare chip从供给基板吸附起来，然后将PDMS传送头与接受基板进行对位，随后将PDMS传送头所吸附的Micro LED barechip贴附到接受基板预设的位置上，再将PDMS传送头从接受基板上剥离，即可完成MicroLED bare chip的转移，形成Micro LED阵列基板，进一步地，所述接受基板是已经预先制备完成电路图案的硅基板，其可以为柔性也可以为刚性。\n\n[0004]在现有Micro LED显示面板的制作过程中，为了保护Micro LED及其下方的驱动基板，并改善Micro LED阵列的发光效果，提出一种新的Micro LED阵列基板的封装结构，是本领域亟需解决的技术问题之一。\n\n发明内容\n\n[0005]本发明的目的在于提供一种微发光二极管阵列基板的封装结构，能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果。\n\n[0006]为实现上述目的，本发明提供了一种微发光二极管阵列基板的封装结构，包括基板、设于所述基板上的微发光二极管阵列、设于所述基板上方并覆盖所述微发光二极管阵列的保护层；\n\n[0007]所述微发光二极管阵列包括数个阵列排布的微发光二极管；\n\n[0008]可选地，所述基板的上表面上、或所述保护层的下表面上设有数个凹槽，所述数个微发光二极管容置于所述数个凹槽中。\n\n[0009]所述数个凹槽设于所述基板的上表面上，所述保护层为玻璃、或塑料材料的板材，所述保护层的厚度大于1mm。\n\n[0010]可选地，所述的微发光二极管阵列基板的封装结构，还包括设于所述基板与所述保护层之间的数个支撑柱，所述数个支撑柱设于所述基板上，以对所述保护层进行支撑。\n\n[0011]可选地，所述数个凹槽设于所述基板的上表面上，所述保护层为通过涂布工艺形成在所述基板上的有机膜层。\n\n[0012]所述数个凹槽与所述数个微发光二极管一一对应设置，每一凹槽的深度大于其内容置的微发光二极管的高度。\n\n[0013]每一凹槽的槽壁上均设有反射层。\n\n[0014]可选地，所述数个凹槽设于所述保护层的下表面上，所述保护层为玻璃、或塑料材料的板材，所述保护层的厚度大于1mm。\n\n[0015]所述数个凹槽通过激光打孔、或压印的方式形成于所述保护层的下表面上；\n\n[0016]所述凹槽的侧壁为弧面状，所述凹槽的槽口为圆形、或椭圆形。\n\n[0017]每一凹槽对应覆盖一个或多个微发光二极管。\n\n[0018]所述基板为TFT阵列基板。\n\n[0019]本发明的有益效果：本发明提供了一种微发光二极管阵列基板的封装结构，包括基板、设于所述基板上的微发光二极管阵列、设于所述基板上方并覆盖所述微发光二极管阵列的保护层；所述微发光二极管阵列包括数个阵列排布的微发光二极管；所述基板的上表面上、或所述保护层的下表面上设有数个凹槽，所述数个微发光二极管容置于所述数个凹槽中；能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果。\n\n附图说明\n\n[0020]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0021]附图中，\n\n[0022]图1为本发明微发光二极管阵列基板的封装结构第一实施例的示意图；\n\n[0023]图2为本发明微发光二极管阵列基板的封装结构第二实施例的示意图；\n\n[0024]图3为本发明微发光二极管阵列基板的封装结构第三实施例的示意图；\n\n[0025]图4为本发明微发光二极管阵列基板的封装结构第四实施例的示意图；\n\n[0026]图5为本发明微发光二极管阵列基板的封装结构第四实施例中数个凹槽在保护层上的排布示意图；\n\n[0027]图6为本发明微发光二极管阵列基板的封装结构第五实施例的示意图。\n\n具体实施方式\n\n[0028]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0029]请参阅图1，图1为本发明微发光二极管阵列基板的封装结构第一实施例的示意图，在本实施例中，所述微发光二极管阵列基板的封装结构包括基板1、设于所述基板1上的微发光二极管阵列3、设于所述基板1上方并覆盖所述微发光二极管阵列3的保护层2；\n\n[0030]所述微发光二极管阵列3包括数个阵列排布的微发光二极管31；\n\n[0031]所述基板1的上表面上设有数个凹槽51，所述数个微发光二极管31容置于所述数个凹槽51中。\n\n[0032]具体地，本实施例中，所述保护层2可以为玻璃(Glass)板、塑料板、或其他材质的板材，所述保护层2起到封装盖板的作用；例如，所述保护层2为聚对苯二甲酸乙二酯(PET)、聚碳酸酯(PC)、或聚甲基丙烯酸酯(PMA)等板材。\n\n[0033]优选地，所述保护层2的厚度大于1mm。\n\n[0034]具体地，每一凹槽51的槽壁上均设有反射层52，通过对微发光二极管31发出的光进行反射，从而可以有效提高微发光二极管阵列基板的光出射效率。\n\n[0035]具体地，所述数个凹槽51与所述数个微发光二极管31一一对应设置。\n\n[0036]优选地，每一凹槽51的深度大于其内容置的微发光二极管31的高度，即每一微发光二极管31均完全陷入在对应的凹槽51内，从而有利于所述保护层2设置在所述基板1上，以对微发光二极管阵列基板进行封装。\n\n[0037]具体地，所述基板1为TFT阵列基板，以对其上的微发光二极管阵列3进行驱动，从而所述微发光二极管阵列基板进行封装后，可进一步用于制作微发光二极管显示器。\n\n[0038]请参阅图2，图2为本发明微发光二极管阵列基板的封装结构第二实施例的示意图，本实施例与上述第一实施例相比，所述的微发光二极管阵列基板的封装结构，还包括设于所述基板1与所述保护层2之间的数个支撑柱41，所述数个支撑柱41设于所述基板1上，以对所述保护层2进行支撑。其它技术特征均与上述第一实施例相同，在此不再赘述\n\n[0039]请参阅图3，图3为本发明微发光二极管阵列基板的封装结构第三实施例的示意图，本实施例与上述第一实施例相比，所述保护层2为通过涂布工艺形成在所述基板1上的有机膜层，例如，所述保护层2为可溶性聚四氟乙烯(PFA)材料的膜层，其通过涂布及固化工艺形成在所述基板1上。\n\n[0040]具体地，在本实施例中，所述保护层2的厚度只需满足覆盖住所述数个微发光二极管31即可，对其厚度没有明确限制。其它技术特征均与上述第一实施例相同，在此不再赘述\n\n[0041]请参阅图4，图4为本发明微发光二极管阵列基板的封装结构第四实施例的示意图，本实施例与上述第一实施例相比，所述数个凹槽51设于所述保护层2的下表面上。\n\n[0042]具体地，本实施例中，所述凹槽51的侧壁为弧面状，所述凹槽51的槽口可以为圆形、或椭圆形等形状，由于玻璃、或塑料材料的保护层2与凹槽51内的介质(例如空气)存在折射率的差异，从而所述凹槽52可以对其覆盖的微发光二极管31发出的光产生聚光的效果，进而可适当提高微发光二极管阵列基板的光出射效率。\n\n[0043]具体地，所述数个凹槽51通过激光打孔、或压印的方式形成于所述保护层2的下表面上。\n\n[0044]具体地，如图5所示，所述数个凹槽51与所述数个微发光二极管31对应的按照阵列排布的方式设于所述保护层2的下表面上，且所述凹槽51按照其孔径大于所述微发光二极管31的长度进行设置，每一凹槽51可对应覆盖一个或多个微发光二极管31；具体在本实施例中，每一凹槽51对应覆盖一个微发光二极管31。其它技术特征均与上述第四实施例相同，在此不再赘述。\n\n[0045]请参阅图6，图6为本发明微发光二极管阵列基板的封装结构第五实施例的示意图，本实施例与上述第四实施例相比，具体地，每一凹槽51对应覆盖两个微发光二极管31，相应地，所述凹槽51按照其孔径大于两个微发光二极管31的长度进行设置。其它技术特征均与上述第四实施例相同，在此不再赘述。\n\n[0046]综上所述，本发明提供了一种微发光二极管阵列基板的封装结构，包括基板、设于所述基板上的微发光二极管阵列、设于所述基板上方并覆盖所述微发光二极管阵列的保护层；所述微发光二极管阵列包括数个阵列排布的微发光二极管；所述基板的上表面上、或所述保护层的下表面上设有数个凹槽，所述数个微发光二极管容置于所述数个凹槽中；能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果。\n\n[0047]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管阵列基板的封装结构。\n\n背景技术\n\n[0002]微发光二极管(Micro LED)是一种尺寸在几微米到几百微米之间的器件，由于其较普通LED的尺寸要小很多，从而使得单一的LED作为像素(Pixel)用于显示成为可能，Micro LED显示器便是一种以高密度的Micro LED阵列作为显示像素阵列来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但Micro LED显示器相比于OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0003]由于晶格匹配的原因，Micro LED器件必须先在蓝宝石类的供给基板上通过分子束外延的方法生长出来，随后通过激光剥离(Laser lift-off，LLO)技术将微发光二极管裸芯片(bare chip)从供给基板上分离开，然后通过微转印(Micro Transfer Print，NTP)技术将其转移到已经预先制备完成电路图案的接受基板上，形成Micro LED阵列，进而做成Micro LED显示面板。其中，微转印的基本原理大致为：使用具有图案化的传送头(Transferhead)，例如具有凸起结构的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)类传送头，通过具有粘性的PDMS传送层(Transfer layer)将Micro LED bare chip从供给基板吸附起来，然后将PDMS传送头与接受基板进行对位，随后将PDMS传送头所吸附的Micro LED barechip贴附到接受基板预设的位置上，再将PDMS传送头从接受基板上剥离，即可完成MicroLED bare chip的转移，形成Micro LED阵列基板，进一步地，所述接受基板是已经预先制备完成电路图案的硅基板，其可以为柔性也可以为刚性。\n\n[0004]在现有Micro LED显示面板的制作过程中，为了保护Micro LED及其下方的驱动基板，并改善Micro LED阵列的发光效果，提出一种新的Micro LED阵列基板的封装结构，是本领域亟需解决的技术问题之一。\n\n发明内容\n\n[0005]本发明的目的在于提供一种微发光二极管阵列基板的封装结构，能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果。\n\n[0006]为实现上述目的，本发明提供了一种微发光二极管阵列基板的封装结构，包括基板、设于所述基板上的微发光二极管阵列、设于所述基板上方并覆盖所述微发光二极管阵列的保护层；\n\n[0007]所述微发光二极管阵列包括数个阵列排布的微发光二极管；\n\n[0008]可选地，所述基板的上表面上、或所述保护层的下表面上设有数个凹槽，所述数个微发光二极管容置于所述数个凹槽中。\n\n[0009]所述数个凹槽设于所述基板的上表面上，所述保护层为玻璃、或塑料材料的板材，所述保护层的厚度大于1mm。\n\n[0010]可选地，所述的微发光二极管阵列基板的封装结构，还包括设于所述基板与所述保护层之间的数个支撑柱，所述数个支撑柱设于所述基板上，以对所述保护层进行支撑。\n\n[0011]可选地，所述数个凹槽设于所述基板的上表面上，所述保护层为通过涂布工艺形成在所述基板上的有机膜层。\n\n[0012]所述数个凹槽与所述数个微发光二极管一一对应设置，每一凹槽的深度大于其内容置的微发光二极管的高度。\n\n[0013]每一凹槽的槽壁上均设有反射层。\n\n[0014]可选地，所述数个凹槽设于所述保护层的下表面上，所述保护层为玻璃、或塑料材料的板材，所述保护层的厚度大于1mm。\n\n[0015]所述数个凹槽通过激光打孔、或压印的方式形成于所述保护层的下表面上；\n\n[0016]所述凹槽的侧壁为弧面状，所述凹槽的槽口为圆形、或椭圆形。\n\n[0017]每一凹槽对应覆盖一个或多个微发光二极管。\n\n[0018]所述基板为TFT阵列基板。\n\n[0019]本发明的有益效果：本发明提供了一种微发光二极管阵列基板的封装结构，包括基板、设于所述基板上的微发光二极管阵列、设于所述基板上方并覆盖所述微发光二极管阵列的保护层；所述微发光二极管阵列包括数个阵列排布的微发光二极管；所述基板的上表面上、或所述保护层的下表面上设有数个凹槽，所述数个微发光二极管容置于所述数个凹槽中；能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果。\n\n附图说明\n\n[0020]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0021]附图中，\n\n[0022]图1为本发明微发光二极管阵列基板的封装结构第一实施例的示意图；\n\n[0023]图2为本发明微发光二极管阵列基板的封装结构第二实施例的示意图；\n\n[0024]图3为本发明微发光二极管阵列基板的封装结构第三实施例的示意图；\n\n[0025]图4为本发明微发光二极管阵列基板的封装结构第四实施例的示意图；\n\n[0026]图5为本发明微发光二极管阵列基板的封装结构第四实施例中数个凹槽在保护层上的排布示意图；\n\n[0027]图6为本发明微发光二极管阵列基板的封装结构第五实施例的示意图。\n\n具体实施方式\n\n[0028]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0029]请参阅图1，图1为本发明微发光二极管阵列基板的封装结构第一实施例的示意图，在本实施例中，所述微发光二极管阵列基板的封装结构包括基板1、设于所述基板1上的微发光二极管阵列3、设于所述基板1上方并覆盖所述微发光二极管阵列3的保护层2；\n\n[0030]所述微发光二极管阵列3包括数个阵列排布的微发光二极管31；\n\n[0031]所述基板1的上表面上设有数个凹槽51，所述数个微发光二极管31容置于所述数个凹槽51中。\n\n[0032]具体地，本实施例中，所述保护层2可以为玻璃(Glass)板、塑料板、或其他材质的板材，所述保护层2起到封装盖板的作用；例如，所述保护层2为聚对苯二甲酸乙二酯(PET)、聚碳酸酯(PC)、或聚甲基丙烯酸酯(PMA)等板材。\n\n[0033]优选地，所述保护层2的厚度大于1mm。\n\n[0034]具体地，每一凹槽51的槽壁上均设有反射层52，通过对微发光二极管31发出的光进行反射，从而可以有效提高微发光二极管阵列基板的光出射效率。\n\n[0035]具体地，所述数个凹槽51与所述数个微发光二极管31一一对应设置。\n\n[0036]优选地，每一凹槽51的深度大于其内容置的微发光二极管31的高度，即每一微发光二极管31均完全陷入在对应的凹槽51内，从而有利于所述保护层2设置在所述基板1上，以对微发光二极管阵列基板进行封装。\n\n[0037]具体地，所述基板1为TFT阵列基板，以对其上的微发光二极管阵列3进行驱动，从而所述微发光二极管阵列基板进行封装后，可进一步用于制作微发光二极管显示器。\n\n[0038]请参阅图2，图2为本发明微发光二极管阵列基板的封装结构第二实施例的示意图，本实施例与上述第一实施例相比，所述的微发光二极管阵列基板的封装结构，还包括设于所述基板1与所述保护层2之间的数个支撑柱41，所述数个支撑柱41设于所述基板1上，以对所述保护层2进行支撑。其它技术特征均与上述第一实施例相同，在此不再赘述\n\n[0039]请参阅图3，图3为本发明微发光二极管阵列基板的封装结构第三实施例的示意图，本实施例与上述第一实施例相比，所述保护层2为通过涂布工艺形成在所述基板1上的有机膜层，例如，所述保护层2为可溶性聚四氟乙烯(PFA)材料的膜层，其通过涂布及固化工艺形成在所述基板1上。\n\n[0040]具体地，在本实施例中，所述保护层2的厚度只需满足覆盖住所述数个微发光二极管31即可，对其厚度没有明确限制。其它技术特征均与上述第一实施例相同，在此不再赘述\n\n[0041]请参阅图4，图4为本发明微发光二极管阵列基板的封装结构第四实施例的示意图，本实施例与上述第一实施例相比，所述数个凹槽51设于所述保护层2的下表面上。\n\n[0042]具体地，本实施例中，所述凹槽51的侧壁为弧面状，所述凹槽51的槽口可以为圆形、或椭圆形等形状，由于玻璃、或塑料材料的保护层2与凹槽51内的介质(例如空气)存在折射率的差异，从而所述凹槽52可以对其覆盖的微发光二极管31发出的光产生聚光的效果，进而可适当提高微发光二极管阵列基板的光出射效率。\n\n[0043]具体地，所述数个凹槽51通过激光打孔、或压印的方式形成于所述保护层2的下表面上。\n\n[0044]具体地，如图5所示，所述数个凹槽51与所述数个微发光二极管31对应的按照阵列排布的方式设于所述保护层2的下表面上，且所述凹槽51按照其孔径大于所述微发光二极管31的长度进行设置，每一凹槽51可对应覆盖一个或多个微发光二极管31；具体在本实施例中，每一凹槽51对应覆盖一个微发光二极管31。其它技术特征均与上述第四实施例相同，在此不再赘述。\n\n[0045]请参阅图6，图6为本发明微发光二极管阵列基板的封装结构第五实施例的示意图，本实施例与上述第四实施例相比，具体地，每一凹槽51对应覆盖两个微发光二极管31，相应地，所述凹槽51按照其孔径大于两个微发光二极管31的长度进行设置。其它技术特征均与上述第四实施例相同，在此不再赘述。\n\n[0046]综上所述，本发明提供了一种微发光二极管阵列基板的封装结构，包括基板、设于所述基板上的微发光二极管阵列、设于所述基板上方并覆盖所述微发光二极管阵列的保护层；所述微发光二极管阵列包括数个阵列排布的微发光二极管；所述基板的上表面上、或所述保护层的下表面上设有数个凹槽，所述数个微发光二极管容置于所述数个凹槽中；能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果。\n\n[0047]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10600, 23654, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管显示面板及其制作方法。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但Micro LED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]在微发光二极管显示面板的制作过程中，微发光二极管必须先在原始基板(如蓝宝石类基板)上通过分子束外延的方法生长出来，而做成显示面板，还必须要把微发光二极管器件从原始基板上转移到用于形成显示面板的接收基板上排成显示阵列，具体为：先在原始基板上形成微发光二极管，随后通过激光剥离技术(Laser lift-off，LLO)等方法将微发光二极管从原始基板上剥离开，并使用一个采用诸如聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)等材料制作的转印头，将微发光二极管从原始基板上吸附到接收基板上预设的位置。\n\n[0005]目前，微发光二极管转印到接收基板上后，还需要形成顶部电极后才能判断微发光二极管与接收基板的邦定是否正常，但由于此时制程已经基本完成，这种情况下即便发现微发光二极管与接收基板的邦定不良，也已很难修复，因此需要提供一种新的微发光二极管显示面板及其制作方法，能够在转印之后直接进行微发光二极管的工作状况检测，降低产品检测及修复的难度，提升产品良率。\n\n发明内容\n\n[0006]本发明的目的在于提供一种微发光二极管显示面板，能够降低产品检测及修复的难度，提升产品良率。\n\n[0007]本发明的目的还在于提供一种微发光二极管显示面板的制作方法，能够降低产品检测及修复的难度，提升产品良率。\n\n[0008]为实现上述目的，本发明提供了一种微发光二极管显示面板，包括：衬底基板、设于所述衬底基板上的多个阵列排布的子像素区域、设于每一个子像素区域内的间隔排列的第一电极触点和第二电极触点、以及设于每一个子像素区域内的第一电极触点和第二电极触点上的微发光二极管；\n\n[0009]所述微发光二极管包括：与所述第一电极触点接触的底电极、设于所述底电极上方并与所述底电极接触LED半导体层、设于所述LED半导体层上方并与所述LED半导体层接触的顶电极、包围所述LED半导体层的绝缘保护层、以及设于所述绝缘保护层上的连接所述顶电极和第二电极触点的连接电极。\n\n[0010]还包括：设于所述衬底基板与第一电极触点和第二电极触点之间的TFT层；\n\n[0011]所述TFT层包括：设于所述衬底基板上的有源层、覆盖所述有源层与所述衬底基板的栅极绝缘层、设于所述有源层上方的栅极绝缘层上的栅极、覆盖所述栅极以及栅极绝缘层的层间绝缘层、设于所述层间绝缘层上的与所述有源层的两端接触的源极和漏极、以及覆盖所述源极、漏极和层间绝缘层的钝化层；所述第二电极触点与所述源极接触。\n\n[0012]还包括设于钝化层上且位于微发光二极管的四周的像素定义层、以及覆盖所述钝化层、第一电极触点、第二电极触点、微发光二极管及像素定义层的保护层。\n\n[0013]本发明还提供一种微发光二极管显示面板的制作方法，包括如下步骤：\n\n[0014]步骤1、提供一原始基板，在所述原始基板上形成多个间隔排列的微发光二极管的半成品；\n\n[0015]每一个微发光二极管的半成品均包括：设于所述原始基板上的LED半导体层、覆盖所述LED半导体层和原始基板的第一绝缘层、设于所述第一绝缘层上并与所述LED半导体层接触的底电极、以及设于所述第一绝缘层上并与原始基板接触的连接电极；\n\n[0016]步骤2、提供一转运基板，将所述转运基板表面与各个微发光二极管的半成品的底电极以及连接电极粘合，剥离所述原始基板，使得所有的微发光二极管的半成品均转移到转运基板上，暴露出所述LED半导体层与原始基板接触的一侧表面；\n\n[0017]步骤3、在所述暴露出的LED半导体层以及第一绝缘层上依次形成第二绝缘层和设于第二绝缘层上的顶电极，得到多个间隔排列的微发光二极管；所述顶电极与所述LED半导体层和连接电极接触；\n\n[0018]步骤4、提供一转印头和一接收基板，所述接收基板包括：衬底基板、设于所述衬底基板上多个阵列排布的子像素区域、以及设于每一个子像素区域内的间隔排列的第一电极触点和第二电极触点；\n\n[0019]步骤5、通过所述转印头将转运基板上的微发光二极管转印到接收基板上，每一个子像素区域对应一个微发光二极管，各个子像素区域内的微发光二极管的底电极和连接电极分别与该子像素区域内的第一电极触点和第二电极触点邦定；\n\n[0020]步骤6、向所述第一电极触点和第二电极触点提供测试电压，测试接收基板上的各个微发光二极管是否能够正常点亮，若所述接收基板上所有微发光二极管均能正常点亮，则在所述微发光二极管、第一电极触点、及第二电极触点上继续形成保护层；若所述接收基板上有微发光二极管不能正常点亮，则将不能正常点亮的微发光二极管替换为新的微发光二极管，并重新测试直至接收基板上所有微发光二极管均能正常点亮。\n\n[0021]所述步骤1具体包括：\n\n[0022]步骤11、提供一原始基板，在所述原始基板上形成LED半导体薄膜，在所述LED半导体薄膜上形成图案化的第一光阻层；\n\n[0023]步骤12、以所述第一光阻层为遮挡，对所述LED半导体薄膜进行刻蚀，形成多个间隔排列的LED半导体层；\n\n[0024]步骤13、在所述LED半导体层和原始基板上覆盖第一绝缘层，在所述第一绝缘层上形成图案化的第二光阻层；\n\n[0025]步骤14、以第二光阻层为遮挡，对所述第一绝缘层进行刻蚀，形成贯穿所述第一绝缘层的第一通孔和第二通孔，所述第一通孔和第二通孔分别暴露出所述LED半导体层的一部分以及原始基板的一部分；\n\n[0026]步骤15、在所述第一绝缘层、LED半导体层、及原始基板上形成第一金属薄膜，在所述第一金属薄膜上形成图案化的第三光阻层；\n\n[0027]步骤16、以第三光阻层为遮挡，对所述第一金属薄膜进行刻蚀，形成底电极和连接电极，所述底电极通过第一通孔与LED半导体层接触，所述连接电极通过第二通孔与原始基板接触。\n\n[0028]所述步骤2中的转运基板为表面设有粘合层的硬质基板。\n\n[0029]所述步骤3具体包括：\n\n[0030]步骤31、在所述LED半导体层以及第一绝缘层上形成第二绝缘层，在所述第二绝缘层上形成图案化的第四光阻层；\n\n[0031]步骤32、以所述第四光阻层为遮挡，对所述第二绝缘层进行刻蚀，形成贯穿所述第二绝缘层的第三通孔和第四通孔，所述第三通孔和第四通孔分别暴露出所述LED半导体层的一部分和连接电极的一部分；\n\n[0032]步骤33、在所述第二绝缘层上沉积并图案化导电薄膜，形成顶电极，所述顶电极分别通过所述第三通孔和第四通孔与所述LED半导体层以及连接电极接触。\n\n[0033]所述步骤4中提供的接收基板还包括：TFT层和像素定义层；\n\n[0034]所述TFT层设于所述衬底基板与第一电极触点和第二电极触点之间，包括：设于所述衬底基板上的有源层、覆盖所述有源层与所述衬底基板的栅极绝缘层、设于所述有源层上方的栅极绝缘层上的栅极、覆盖所述栅极以及栅极绝缘层的层间绝缘层、设于所述层间绝缘层上的与所述有源层的两端接触的源极和漏极、以及覆盖所述源极、漏极和层间绝缘层的钝化层；所述第二电极触点与所述源极接触；所述像素定义层设于钝化层上且位于微发光二极管的四周。\n\n[0035]所述第一电极触点和第二电极触点上预设有至少两个邦定位置，所述步骤6中将不能正常点亮的微发光二极管替换为新的微发光二极管时，替换后的微发光二极管与替换前的微发光二极管位于不同的邦定位置。\n\n[0036]所述步骤2中通过激光剥离工艺剥离原始基板。\n\n[0037]本发明的有益效果：本发明提供一种微发光二极管显示面板，该显示面板的衬底基板上设有间隔排列的第一电极触点和第二电极触点，所述第一电极触点和第二电极触点分别与微发光二极管的底电极和连接电极接触，所述连接电极还与微发光二极管的顶电极接触，能够在微发光二极管转印后直接进行微发光二极管的检测，降低产品检测及修复的难度，提升产品良率。本发明还提供一种微发光二极管显示面板的制作方法，能够在微发光二极管转印后直接进行微发光二极管的检测，降低产品检测及修复的难度，提升产品良率。\n\n附图说明\n\n[0038]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0039]附图中，\n\n[0040]图1至图8为本发明的微发光二极管显示面板的制作方法的步骤1的示意图；\n\n[0041]图9为本发明的微发光二极管显示面板的制作方法的步骤2的示意图；\n\n[0042]图10至图12为本发明的微发光二极管显示面板的制作方法的步骤3的示意图；\n\n[0043]图13和图14为本发明的微发光二极管显示面板的制作方法的步骤4和步骤5的示意图；\n\n[0044]图15为本发明的微发光二极管显示面板的制作方法的步骤6的示意图暨本发明的微发光二极管显示面板的结构示意图；\n\n[0045]图16为本发明的微发光二极管显示面板的制作方法的步骤6的俯视示意图；\n\n[0046]图17为本发明的微发光二极管显示面板的制作方法的流程图。\n\n具体实施方式\n\n[0047]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0048]请参阅图15，本发明提供一种微发光二极管显示面板，包括：衬底基板41、设于所述衬底基板41上的多个阵列排布的子像素区域15、设于每一个子像素区域15内的间隔排列的第一电极触点43和第二电极触点44、以及设于每一个子像素区域15内的第一电极触点43和第二电极触点44上的微发光二极管200；\n\n[0049]所述微发光二极管200包括：与所述第一电极触点43接触的底电极6、设于所述底电极6上方并与所述底电极6接触LED半导体层2、设于所述LED半导体层2上方并与所述LED半导体层2接触的顶电极13、包围所述LED半导体层2的绝缘保护层14、以及设于所述绝缘保护层14上的连接所述顶电极13和第二电极触点44的连接电极7。\n\n[0050]具体地，所述微发光二极管显示面板还包括：设于所述衬底基板41与第一电极触点43和第二电极触点44之间的TFT层42；所述TFT层42包括：设于所述衬底基板41上的有源层421、覆盖所述有源层421与所述衬底基板41的栅极绝缘层422、设于所述有源层421上方的栅极绝缘层422上的栅极423、覆盖所述栅极423以及栅极绝缘层422的层间绝缘层424、设于所述层间绝缘层424上的与所述有源层421的两端接触的源极425和漏极426、以及覆盖所述源极425、漏极426和层间绝缘层424的钝化层427；所述第二电极触点44与所述源极425接触。\n\n[0051]具体地，所述微发光二极管显示面板还包括设于钝化层427上且位于微发光二极管200的四周的像素定义层45、以及覆盖所述钝化层427、第一电极触点43、第二电极触点44、微发光二极管200及像素定义层45的保护层16。\n\n[0052]具体地，所述保护层16具有增强微发光二极管200的光提取的功能，且所述保护层16具有良好的热传导能力。\n\n[0053]具体地，所述LED半导体层2包括：N+层、P+层、以及与N+层和P+层接触的多量子井层。所述底电极6和连接电极7的材料可以为镍(Ni)、钼(Mo)、铝(Al)、金(Au)、铂(Pt)、及钛(Ti)等金属中的一种或多种的组合。所述顶电极13为透明电极，材料为氧化铟锡(ITO)、氧化铟锌(IZO)、或聚乙撑二氧噻吩和聚苯乙烯磺酸的混合物(PEDOT：PSS)，所述绝缘保护层14的材料为氧化硅(SiOx)、氮化硅(SiNx)、或氧化铝(Al2O3)等。\n\n[0054]需要说明的是，本发明的微发光二极管显示面板通过连接电极7连接顶电极13和第二电极触点44，可在微发光二极管200转印前直接形成顶电极13，在微发光二极管200转印后可直接进行微发光二极管200的点亮测试，在微发光二极管200确定正常发光后再继续制作保护层16等其他结构，能够降低产品检测及修复的难度，提升产品良率。\n\n[0055]请参阅图17，本发明还提供一种微发光二极管显示面板的制作方法，包括如下步骤：\n\n[0056]步骤1、提供一原始基板1，在所述原始基板1上形成多个间隔排列的微发光二极管的半成品100；\n\n[0057]每一个微发光二极管的半成品100均包括：设于所述原始基板1上的LED半导体层2、覆盖所述LED半导体层2和原始基板1的第一绝缘层3、设于所述第一绝缘层3上并与所述LED半导体层2接触的底电极6、以及设于所述第一绝缘层3上并与原始基板1接触的连接电极7。\n\n[0058]具体地，所述步骤1具体包括：\n\n[0059]步骤11、请参阅图1，提供一原始基板1，在所述原始基板1上形成LED半导体薄膜2’，在所述LED半导体薄膜2’上形成图案化的第一光阻层10；\n\n[0060]步骤12、请参阅图2，以所述第一光阻层10为遮挡，对所述LED半导体薄膜2’进行刻蚀，形成多个间隔排列的LED半导体层2；\n\n[0061]步骤13、请参阅图3和图4，在所述LED半导体层2和原始基板1上覆盖第一绝缘层3，在所述第一绝缘层3上形成图案化的第二光阻层20；\n\n[0062]步骤14、请参阅图5，以第二光阻层20为遮挡，对所述第一绝缘层3进行刻蚀，形成贯穿所述第一绝缘层3的第一通孔4和第二通孔5，所述第一通孔4和第二通孔5分别暴露出所述LED半导体层2的一部分以及原始基板1的一部分；\n\n[0063]步骤15、请参阅图6和图7，在所述第一绝缘层3、LED半导体层2、及原始基板1上形成第一金属薄膜6’，在所述第一金属薄膜6’上形成图案化的第三光阻层30；\n\n[0064]步骤16、请参阅图8，以第三光阻层30为遮挡，对所述第一金属薄膜6’进行刻蚀，形成底电极6和连接电极7，所述底电极6通过第一通孔4与LED半导体层2接触，所述连接电极7通过第二通孔5与原始基板1接触。\n\n[0065]具体的，所述原始基板1为蓝宝石基板(Al2O3)、硅基板(Si)、碳化硅基板(SiC)、或氮化镓基板(GaN)等，所述LED半导体层2包括：N+层、P+层、以及与N+层和P+层接触的多量子井层。所述底电极6和连接电极7的材料可以为镍、钼、铝、金、铂、及钛等金属中的一种或多种的组合。所述第一绝缘层3的材料为氧化硅、氮化硅、或氧化铝等。\n\n[0066]步骤2、请参阅图9，提供一转运基板8，将所述转运基板8表面与各个微发光二极管的半成品100的底电极6以及连接电极7粘合，剥离所述原始基板1，使得所有的微发光二极管的半成品100均转移到转运基板8上，暴露出所述LED半导体层2与原始基板1接触的一侧表面。\n\n[0067]具体地，所述步骤2中的转运基板8为表面设有粘合层的硬质基板，通过所述硬质基板表面的粘合层粘合所述底电极6以及连接电极7，使得所述微发光二极管的半成品100与转运基板8粘合，再通过激光剥离工艺去除原始基板1，使得微发光二极管的半成品100转移到转运基板8，且LED半导体层2与原始基板1接触的一侧表面暴露出来。\n\n[0068]具体地，所述步骤2还包括将转运基板8与其上的微发光二极管的半成品100上下倒转，以使LED半导体层2暴露出来的一侧朝上，便于后续制程的进行。\n\n[0069]步骤3、在所述暴露出的LED半导体层2以及第一绝缘层3上依次形成第二绝缘层9和设于第二绝缘层9上的顶电极13，得到多个间隔排列的微发光二极管200；所述顶电极13与所述LED半导体层2和连接电极7接触。\n\n[0070]具体地，所述第一绝缘层3及第二绝缘层9共同构成包围LED半导体层2的绝缘保护层14。\n\n[0071]具体地，所述步骤3具体包括：步骤31、请参阅图10，在所述LED半导体层2以及第一绝缘层3上形成第二绝缘层9，在所述第二绝缘层9上形成图案化的第四光阻层40；\n\n[0072]步骤32、请参阅图11，以所述第四光阻层40为遮挡，对所述第二绝缘层9进行刻蚀，形成贯穿所述第二绝缘层9的第三通孔11和第四通孔12，所述第三通孔11和第四通孔12分别暴露出所述LED半导体层2的一部分和连接电极7的一部分；\n\n[0073]步骤33、请参阅图12，在所述第二绝缘层9上沉积并图案化导电薄膜，形成顶电极13，所述顶电极13分别通过所述第三通孔11和第四通孔12与所述LED半导体层2以及连接电极7接触。\n\n[0074]具体地，所述第二绝缘层9的材料为氧化硅、氮化硅、或氧化铝等，所述顶电极13为透明电极，材料为ITO、IZO、或PEDOT：PSS。\n\n[0075]步骤4、请参阅图13和图14，提供一转印头300和一接收基板400，所述接收基板400包括：衬底基板41、设于所述衬底基板41上多个阵列排布的子像素区域15、以及设于每一个子像素区域15内的间隔排列的第一电极触点43和第二电极触点44。\n\n[0076]具体地，所述步骤4中提供的接收基板400还包括：TFT层42和像素定义层45；所述TFT层42设于所述衬底基板41与第一电极触点43和第二电极触点44之间，包括：设于所述衬底基板41上的有源层421、覆盖所述有源层421与所述衬底基板41的栅极绝缘层422、设于所述有源层421上方的栅极绝缘层422上的栅极423、覆盖所述栅极423以及栅极绝缘层422的层间绝缘层424、设于所述层间绝缘层424上的与所述有源层421的两端接触的源极425和漏极426、以及覆盖所述源极425、漏极426和层间绝缘层424的钝化层427；所述第二电极触点44与所述源极425接触；所述像素定义层45设于钝化层427上且位于微发光二极管200的四周。\n\n[0077]步骤5、请参阅图14，通过所述转印头300将转运基板8上的微发光二极管200转印到接收基板400上，每一个子像素区域15对应一个微发光二极管200，各个子像素区域15内的微发光二极管200的底电极6和连接电极7分别与该子像素区域15内的第一电极触点43和第二电极触点44邦定(Bonding)。\n\n[0078]步骤6、请参阅图15和图16，向所述第一电极触点43和第二电极触点44提供测试电压，测试接收基板400上的各个微发光二极管200是否能够正常点亮，若所述接收基板400上所有微发光二极管200均能正常点亮，则在所述微发光二极管200、钝化层427、像素定义层45、第一电极触点43、及第二电极触点44上继续形成保护层16；若所述接收基板400上有微发光二极管200不能正常点亮，则将不能正常点亮的微发光二极管200替换为新的微发光二极管200，并重新测试直至接收基板400上所有微发光二极管200均能正常点亮。\n\n[0079]具体地，所述保护层16具有增强微发光二极管200的光提取的功能，且所述保护层16具有良好的热传导能力。\n\n[0080]进一步地，请参阅图16，所述第一电极触点43和第二电极触点44上预设有至少两个邦定位置500，所述步骤6中将不能正常点亮的微发光二极管200替换为新的微发光二极管200时，替换后的微发光二极管200与替换前的微发光二极管200位于不同的邦定位置500。\n\n[0081]需要说明的是，本发明的微发光二极管显示面板的制作方法先在原始基板1上制作包括底电极6、LED半导体层2、和连接电极7的微发光二极管的半成品100，接着将微发光二极管的半成品100转移到转运基板8上并上下倒转，然后接着形成与LED半导体层2和连接电极7均连接的顶电极13，得到成品的微发光二极管200，最后将微发光二极管200转印到接收基板400上，使得底电极6和连接电极7分别与第一电极触点43和第二电极触点44邦定接触，从而在微发光二极管200转印后无需经过任何制程，即可直接进行微发光二极管200的点亮测试，在微发光二极管200确定正常发光后再继续制作保护层16等其他结构，能够降低产品检测及修复的难度，提升产品良率。\n\n[0082]综上所述，本发明提供一种微发光二极管显示面板，该显示面板的衬底基板上设有间隔排列的第一电极触点和第二电极触点，所述第一电极触点和第二电极触点分别与微发光二极管的底电极和连接电极接触，所述连接电极还与微发光二极管的顶电极接触，能够在微发光二极管转印后直接进行微发光二极管的检测，降低产品检测及修复的难度，提升产品良率。本发明还提供一种微发光二极管显示面板的制作方法，能够在微发光二极管转印后直接进行微发光二极管的检测，降低产品检测及修复的难度，提升产品良率。\n\n[0083]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管显示面板及其制作方法。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但Micro LED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]在微发光二极管显示面板的制作过程中，微发光二极管必须先在原始基板(如蓝宝石类基板)上通过分子束外延的方法生长出来，而做成显示面板，还必须要把微发光二极管器件从原始基板上转移到用于形成显示面板的接收基板上排成显示阵列，具体为：先在原始基板上形成微发光二极管，随后通过激光剥离技术(Laser lift-off，LLO)等方法将微发光二极管从原始基板上剥离开，并使用一个采用诸如聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)等材料制作的转印头，将微发光二极管从原始基板上吸附到接收基板上预设的位置。\n\n[0005]目前，微发光二极管转印到接收基板上后，还需要形成顶部电极后才能判断微发光二极管与接收基板的邦定是否正常，但由于此时制程已经基本完成，这种情况下即便发现微发光二极管与接收基板的邦定不良，也已很难修复，因此需要提供一种新的微发光二极管显示面板及其制作方法，能够在转印之后直接进行微发光二极管的工作状况检测，降低产品检测及修复的难度，提升产品良率。\n\n发明内容\n\n[0006]本发明的目的在于提供一种微发光二极管显示面板，能够降低产品检测及修复的难度，提升产品良率。\n\n[0007]本发明的目的还在于提供一种微发光二极管显示面板的制作方法，能够降低产品检测及修复的难度，提升产品良率。\n\n[0008]为实现上述目的，本发明提供了一种微发光二极管显示面板，包括：衬底基板、设于所述衬底基板上的多个阵列排布的子像素区域、设于每一个子像素区域内的间隔排列的第一电极触点和第二电极触点、以及设于每一个子像素区域内的第一电极触点和第二电极触点上的微发光二极管；\n\n[0009]所述微发光二极管包括：与所述第一电极触点接触的底电极、设于所述底电极上方并与所述底电极接触LED半导体层、设于所述LED半导体层上方并与所述LED半导体层接触的顶电极、包围所述LED半导体层的绝缘保护层、以及设于所述绝缘保护层上的连接所述顶电极和第二电极触点的连接电极。\n\n[0010]还包括：设于所述衬底基板与第一电极触点和第二电极触点之间的TFT层；\n\n[0011]所述TFT层包括：设于所述衬底基板上的有源层、覆盖所述有源层与所述衬底基板的栅极绝缘层、设于所述有源层上方的栅极绝缘层上的栅极、覆盖所述栅极以及栅极绝缘层的层间绝缘层、设于所述层间绝缘层上的与所述有源层的两端接触的源极和漏极、以及覆盖所述源极、漏极和层间绝缘层的钝化层；所述第二电极触点与所述源极接触。\n\n[0012]还包括设于钝化层上且位于微发光二极管的四周的像素定义层、以及覆盖所述钝化层、第一电极触点、第二电极触点、微发光二极管及像素定义层的保护层。\n\n[0013]本发明还提供一种微发光二极管显示面板的制作方法，包括如下步骤：\n\n[0014]步骤1、提供一原始基板，在所述原始基板上形成多个间隔排列的微发光二极管的半成品；\n\n[0015]每一个微发光二极管的半成品均包括：设于所述原始基板上的LED半导体层、覆盖所述LED半导体层和原始基板的第一绝缘层、设于所述第一绝缘层上并与所述LED半导体层接触的底电极、以及设于所述第一绝缘层上并与原始基板接触的连接电极；\n\n[0016]步骤2、提供一转运基板，将所述转运基板表面与各个微发光二极管的半成品的底电极以及连接电极粘合，剥离所述原始基板，使得所有的微发光二极管的半成品均转移到转运基板上，暴露出所述LED半导体层与原始基板接触的一侧表面；\n\n[0017]步骤3、在所述暴露出的LED半导体层以及第一绝缘层上依次形成第二绝缘层和设于第二绝缘层上的顶电极，得到多个间隔排列的微发光二极管；所述顶电极与所述LED半导体层和连接电极接触；\n\n[0018]步骤4、提供一转印头和一接收基板，所述接收基板包括：衬底基板、设于所述衬底基板上多个阵列排布的子像素区域、以及设于每一个子像素区域内的间隔排列的第一电极触点和第二电极触点；\n\n[0019]步骤5、通过所述转印头将转运基板上的微发光二极管转印到接收基板上，每一个子像素区域对应一个微发光二极管，各个子像素区域内的微发光二极管的底电极和连接电极分别与该子像素区域内的第一电极触点和第二电极触点邦定；\n\n[0020]步骤6、向所述第一电极触点和第二电极触点提供测试电压，测试接收基板上的各个微发光二极管是否能够正常点亮，若所述接收基板上所有微发光二极管均能正常点亮，则在所述微发光二极管、第一电极触点、及第二电极触点上继续形成保护层；若所述接收基板上有微发光二极管不能正常点亮，则将不能正常点亮的微发光二极管替换为新的微发光二极管，并重新测试直至接收基板上所有微发光二极管均能正常点亮。\n\n[0021]所述步骤1具体包括：\n\n[0022]步骤11、提供一原始基板，在所述原始基板上形成LED半导体薄膜，在所述LED半导体薄膜上形成图案化的第一光阻层；\n\n[0023]步骤12、以所述第一光阻层为遮挡，对所述LED半导体薄膜进行刻蚀，形成多个间隔排列的LED半导体层；\n\n[0024]步骤13、在所述LED半导体层和原始基板上覆盖第一绝缘层，在所述第一绝缘层上形成图案化的第二光阻层；\n\n[0025]步骤14、以第二光阻层为遮挡，对所述第一绝缘层进行刻蚀，形成贯穿所述第一绝缘层的第一通孔和第二通孔，所述第一通孔和第二通孔分别暴露出所述LED半导体层的一部分以及原始基板的一部分；\n\n[0026]步骤15、在所述第一绝缘层、LED半导体层、及原始基板上形成第一金属薄膜，在所述第一金属薄膜上形成图案化的第三光阻层；\n\n[0027]步骤16、以第三光阻层为遮挡，对所述第一金属薄膜进行刻蚀，形成底电极和连接电极，所述底电极通过第一通孔与LED半导体层接触，所述连接电极通过第二通孔与原始基板接触。\n\n[0028]所述步骤2中的转运基板为表面设有粘合层的硬质基板。\n\n[0029]所述步骤3具体包括：\n\n[0030]步骤31、在所述LED半导体层以及第一绝缘层上形成第二绝缘层，在所述第二绝缘层上形成图案化的第四光阻层；\n\n[0031]步骤32、以所述第四光阻层为遮挡，对所述第二绝缘层进行刻蚀，形成贯穿所述第二绝缘层的第三通孔和第四通孔，所述第三通孔和第四通孔分别暴露出所述LED半导体层的一部分和连接电极的一部分；\n\n[0032]步骤33、在所述第二绝缘层上沉积并图案化导电薄膜，形成顶电极，所述顶电极分别通过所述第三通孔和第四通孔与所述LED半导体层以及连接电极接触。\n\n[0033]所述步骤4中提供的接收基板还包括：TFT层和像素定义层；\n\n[0034]所述TFT层设于所述衬底基板与第一电极触点和第二电极触点之间，包括：设于所述衬底基板上的有源层、覆盖所述有源层与所述衬底基板的栅极绝缘层、设于所述有源层上方的栅极绝缘层上的栅极、覆盖所述栅极以及栅极绝缘层的层间绝缘层、设于所述层间绝缘层上的与所述有源层的两端接触的源极和漏极、以及覆盖所述源极、漏极和层间绝缘层的钝化层；所述第二电极触点与所述源极接触；所述像素定义层设于钝化层上且位于微发光二极管的四周。\n\n[0035]所述第一电极触点和第二电极触点上预设有至少两个邦定位置，所述步骤6中将不能正常点亮的微发光二极管替换为新的微发光二极管时，替换后的微发光二极管与替换前的微发光二极管位于不同的邦定位置。\n\n[0036]所述步骤2中通过激光剥离工艺剥离原始基板。\n\n[0037]本发明的有益效果：本发明提供一种微发光二极管显示面板，该显示面板的衬底基板上设有间隔排列的第一电极触点和第二电极触点，所述第一电极触点和第二电极触点分别与微发光二极管的底电极和连接电极接触，所述连接电极还与微发光二极管的顶电极接触，能够在微发光二极管转印后直接进行微发光二极管的检测，降低产品检测及修复的难度，提升产品良率。本发明还提供一种微发光二极管显示面板的制作方法，能够在微发光二极管转印后直接进行微发光二极管的检测，降低产品检测及修复的难度，提升产品良率。\n\n附图说明\n\n[0038]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0039]附图中，\n\n[0040]图1至图8为本发明的微发光二极管显示面板的制作方法的步骤1的示意图；\n\n[0041]图9为本发明的微发光二极管显示面板的制作方法的步骤2的示意图；\n\n[0042]图10至图12为本发明的微发光二极管显示面板的制作方法的步骤3的示意图；\n\n[0043]图13和图14为本发明的微发光二极管显示面板的制作方法的步骤4和步骤5的示意图；\n\n[0044]图15为本发明的微发光二极管显示面板的制作方法的步骤6的示意图暨本发明的微发光二极管显示面板的结构示意图；\n\n[0045]图16为本发明的微发光二极管显示面板的制作方法的步骤6的俯视示意图；\n\n[0046]图17为本发明的微发光二极管显示面板的制作方法的流程图。\n\n具体实施方式\n\n[0047]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0048]请参阅图15，本发明提供一种微发光二极管显示面板，包括：衬底基板41、设于所述衬底基板41上的多个阵列排布的子像素区域15、设于每一个子像素区域15内的间隔排列的第一电极触点43和第二电极触点44、以及设于每一个子像素区域15内的第一电极触点43和第二电极触点44上的微发光二极管200；\n\n[0049]所述微发光二极管200包括：与所述第一电极触点43接触的底电极6、设于所述底电极6上方并与所述底电极6接触LED半导体层2、设于所述LED半导体层2上方并与所述LED半导体层2接触的顶电极13、包围所述LED半导体层2的绝缘保护层14、以及设于所述绝缘保护层14上的连接所述顶电极13和第二电极触点44的连接电极7。\n\n[0050]具体地，所述微发光二极管显示面板还包括：设于所述衬底基板41与第一电极触点43和第二电极触点44之间的TFT层42；所述TFT层42包括：设于所述衬底基板41上的有源层421、覆盖所述有源层421与所述衬底基板41的栅极绝缘层422、设于所述有源层421上方的栅极绝缘层422上的栅极423、覆盖所述栅极423以及栅极绝缘层422的层间绝缘层424、设于所述层间绝缘层424上的与所述有源层421的两端接触的源极425和漏极426、以及覆盖所述源极425、漏极426和层间绝缘层424的钝化层427；所述第二电极触点44与所述源极425接触。\n\n[0051]具体地，所述微发光二极管显示面板还包括设于钝化层427上且位于微发光二极管200的四周的像素定义层45、以及覆盖所述钝化层427、第一电极触点43、第二电极触点44、微发光二极管200及像素定义层45的保护层16。\n\n[0052]具体地，所述保护层16具有增强微发光二极管200的光提取的功能，且所述保护层16具有良好的热传导能力。\n\n[0053]具体地，所述LED半导体层2包括：N+层、P+层、以及与N+层和P+层接触的多量子井层。所述底电极6和连接电极7的材料可以为镍(Ni)、钼(Mo)、铝(Al)、金(Au)、铂(Pt)、及钛(Ti)等金属中的一种或多种的组合。所述顶电极13为透明电极，材料为氧化铟锡(ITO)、氧化铟锌(IZO)、或聚乙撑二氧噻吩和聚苯乙烯磺酸的混合物(PEDOT：PSS)，所述绝缘保护层14的材料为氧化硅(SiOx)、氮化硅(SiNx)、或氧化铝(Al2O3)等。\n\n[0054]需要说明的是，本发明的微发光二极管显示面板通过连接电极7连接顶电极13和第二电极触点44，可在微发光二极管200转印前直接形成顶电极13，在微发光二极管200转印后可直接进行微发光二极管200的点亮测试，在微发光二极管200确定正常发光后再继续制作保护层16等其他结构，能够降低产品检测及修复的难度，提升产品良率。\n\n[0055]请参阅图17，本发明还提供一种微发光二极管显示面板的制作方法，包括如下步骤：\n\n[0056]步骤1、提供一原始基板1，在所述原始基板1上形成多个间隔排列的微发光二极管的半成品100；\n\n[0057]每一个微发光二极管的半成品100均包括：设于所述原始基板1上的LED半导体层2、覆盖所述LED半导体层2和原始基板1的第一绝缘层3、设于所述第一绝缘层3上并与所述LED半导体层2接触的底电极6、以及设于所述第一绝缘层3上并与原始基板1接触的连接电极7。\n\n[0058]具体地，所述步骤1具体包括：\n\n[0059]步骤11、请参阅图1，提供一原始基板1，在所述原始基板1上形成LED半导体薄膜2’，在所述LED半导体薄膜2’上形成图案化的第一光阻层10；\n\n[0060]步骤12、请参阅图2，以所述第一光阻层10为遮挡，对所述LED半导体薄膜2’进行刻蚀，形成多个间隔排列的LED半导体层2；\n\n[0061]步骤13、请参阅图3和图4，在所述LED半导体层2和原始基板1上覆盖第一绝缘层3，在所述第一绝缘层3上形成图案化的第二光阻层20；\n\n[0062]步骤14、请参阅图5，以第二光阻层20为遮挡，对所述第一绝缘层3进行刻蚀，形成贯穿所述第一绝缘层3的第一通孔4和第二通孔5，所述第一通孔4和第二通孔5分别暴露出所述LED半导体层2的一部分以及原始基板1的一部分；\n\n[0063]步骤15、请参阅图6和图7，在所述第一绝缘层3、LED半导体层2、及原始基板1上形成第一金属薄膜6’，在所述第一金属薄膜6’上形成图案化的第三光阻层30；\n\n[0064]步骤16、请参阅图8，以第三光阻层30为遮挡，对所述第一金属薄膜6’进行刻蚀，形成底电极6和连接电极7，所述底电极6通过第一通孔4与LED半导体层2接触，所述连接电极7通过第二通孔5与原始基板1接触。\n\n[0065]具体的，所述原始基板1为蓝宝石基板(Al2O3)、硅基板(Si)、碳化硅基板(SiC)、或氮化镓基板(GaN)等，所述LED半导体层2包括：N+层、P+层、以及与N+层和P+层接触的多量子井层。所述底电极6和连接电极7的材料可以为镍、钼、铝、金、铂、及钛等金属中的一种或多种的组合。所述第一绝缘层3的材料为氧化硅、氮化硅、或氧化铝等。\n\n[0066]步骤2、请参阅图9，提供一转运基板8，将所述转运基板8表面与各个微发光二极管的半成品100的底电极6以及连接电极7粘合，剥离所述原始基板1，使得所有的微发光二极管的半成品100均转移到转运基板8上，暴露出所述LED半导体层2与原始基板1接触的一侧表面。\n\n[0067]具体地，所述步骤2中的转运基板8为表面设有粘合层的硬质基板，通过所述硬质基板表面的粘合层粘合所述底电极6以及连接电极7，使得所述微发光二极管的半成品100与转运基板8粘合，再通过激光剥离工艺去除原始基板1，使得微发光二极管的半成品100转移到转运基板8，且LED半导体层2与原始基板1接触的一侧表面暴露出来。\n\n[0068]具体地，所述步骤2还包括将转运基板8与其上的微发光二极管的半成品100上下倒转，以使LED半导体层2暴露出来的一侧朝上，便于后续制程的进行。\n\n[0069]步骤3、在所述暴露出的LED半导体层2以及第一绝缘层3上依次形成第二绝缘层9和设于第二绝缘层9上的顶电极13，得到多个间隔排列的微发光二极管200；所述顶电极13与所述LED半导体层2和连接电极7接触。\n\n[0070]具体地，所述第一绝缘层3及第二绝缘层9共同构成包围LED半导体层2的绝缘保护层14。\n\n[0071]具体地，所述步骤3具体包括：步骤31、请参阅图10，在所述LED半导体层2以及第一绝缘层3上形成第二绝缘层9，在所述第二绝缘层9上形成图案化的第四光阻层40；\n\n[0072]步骤32、请参阅图11，以所述第四光阻层40为遮挡，对所述第二绝缘层9进行刻蚀，形成贯穿所述第二绝缘层9的第三通孔11和第四通孔12，所述第三通孔11和第四通孔12分别暴露出所述LED半导体层2的一部分和连接电极7的一部分；\n\n[0073]步骤33、请参阅图12，在所述第二绝缘层9上沉积并图案化导电薄膜，形成顶电极13，所述顶电极13分别通过所述第三通孔11和第四通孔12与所述LED半导体层2以及连接电极7接触。\n\n[0074]具体地，所述第二绝缘层9的材料为氧化硅、氮化硅、或氧化铝等，所述顶电极13为透明电极，材料为ITO、IZO、或PEDOT：PSS。\n\n[0075]步骤4、请参阅图13和图14，提供一转印头300和一接收基板400，所述接收基板400包括：衬底基板41、设于所述衬底基板41上多个阵列排布的子像素区域15、以及设于每一个子像素区域15内的间隔排列的第一电极触点43和第二电极触点44。\n\n[0076]具体地，所述步骤4中提供的接收基板400还包括：TFT层42和像素定义层45；所述TFT层42设于所述衬底基板41与第一电极触点43和第二电极触点44之间，包括：设于所述衬底基板41上的有源层421、覆盖所述有源层421与所述衬底基板41的栅极绝缘层422、设于所述有源层421上方的栅极绝缘层422上的栅极423、覆盖所述栅极423以及栅极绝缘层422的层间绝缘层424、设于所述层间绝缘层424上的与所述有源层421的两端接触的源极425和漏极426、以及覆盖所述源极425、漏极426和层间绝缘层424的钝化层427；所述第二电极触点44与所述源极425接触；所述像素定义层45设于钝化层427上且位于微发光二极管200的四周。\n\n[0077]步骤5、请参阅图14，通过所述转印头300将转运基板8上的微发光二极管200转印到接收基板400上，每一个子像素区域15对应一个微发光二极管200，各个子像素区域15内的微发光二极管200的底电极6和连接电极7分别与该子像素区域15内的第一电极触点43和第二电极触点44邦定(Bonding)。\n\n[0078]步骤6、请参阅图15和图16，向所述第一电极触点43和第二电极触点44提供测试电压，测试接收基板400上的各个微发光二极管200是否能够正常点亮，若所述接收基板400上所有微发光二极管200均能正常点亮，则在所述微发光二极管200、钝化层427、像素定义层45、第一电极触点43、及第二电极触点44上继续形成保护层16；若所述接收基板400上有微发光二极管200不能正常点亮，则将不能正常点亮的微发光二极管200替换为新的微发光二极管200，并重新测试直至接收基板400上所有微发光二极管200均能正常点亮。\n\n[0079]具体地，所述保护层16具有增强微发光二极管200的光提取的功能，且所述保护层16具有良好的热传导能力。\n\n[0080]进一步地，请参阅图16，所述第一电极触点43和第二电极触点44上预设有至少两个邦定位置500，所述步骤6中将不能正常点亮的微发光二极管200替换为新的微发光二极管200时，替换后的微发光二极管200与替换前的微发光二极管200位于不同的邦定位置500。\n\n[0081]需要说明的是，本发明的微发光二极管显示面板的制作方法先在原始基板1上制作包括底电极6、LED半导体层2、和连接电极7的微发光二极管的半成品100，接着将微发光二极管的半成品100转移到转运基板8上并上下倒转，然后接着形成与LED半导体层2和连接电极7均连接的顶电极13，得到成品的微发光二极管200，最后将微发光二极管200转印到接收基板400上，使得底电极6和连接电极7分别与第一电极触点43和第二电极触点44邦定接触，从而在微发光二极管200转印后无需经过任何制程，即可直接进行微发光二极管200的点亮测试，在微发光二极管200确定正常发光后再继续制作保护层16等其他结构，能够降低产品检测及修复的难度，提升产品良率。\n\n[0082]综上所述，本发明提供一种微发光二极管显示面板，该显示面板的衬底基板上设有间隔排列的第一电极触点和第二电极触点，所述第一电极触点和第二电极触点分别与微发光二极管的底电极和连接电极接触，所述连接电极还与微发光二极管的顶电极接触，能够在微发光二极管转印后直接进行微发光二极管的检测，降低产品检测及修复的难度，提升产品良率。本发明还提供一种微发光二极管显示面板的制作方法，能够在微发光二极管转印后直接进行微发光二极管的检测，降低产品检测及修复的难度，提升产品良率。\n\n[0083]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10601, 23655, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示面板及其制作方法，以及一种显示设备。\n\n背景技术\n\n[0002]微型发光二极管(Micro LED)的耗电量仅为液晶显示屏(LCD)的十分之一。MicroLED与有机发光二极管(OLED)一样属于自发光器件，具有低功耗、厚度小、质量小、体积小、功耗低、反应快的特点，且不具有OLED色衰的缺点，因此成为面板行业研究的热点。\n\n[0003]现有技术中，Micro LED芯片与薄膜晶体管(TFT)电连接时，一般N型半导体靠近TFT，P型半导体设于N型半导体背向TFT的一侧。由于光从设于所述P型半导体及所述N型半导体之间的发光层射出，并进入P型半导体层进行出射。但是，P型半导体的出光面为光面时，由于全反射会导致部分光线重新进入发光层转化为热量，导致出光效率降低。因此，为了增加出光，现有技术中对P型半导体层进行粗化处理，以减少光的全反射，增加出光效率。但是由于P型半导体层相对薄，厚度在200nm以内，粗化会导致P型半导体材料的晶体质量下降，从而使得所述Micro LED芯片的漏电流增加。\n\n发明内容\n\n[0004]本发明的提供一种显示面板，在增加出光效率的同时，减少所述Micro LED芯片的漏电流的产生。\n\n[0005]所述显示面板包括薄膜晶体管，设于所述薄膜晶体管上并与所述薄膜晶体管电连接的微型发光二极管，所述微型发光二极管包括P型半导体、与所述P型半导体相对设置的N型半导体、设于所述P型半导体与所述N型半导体之间的发光层，所述N型半导体设于所述P型半导体背向所述薄膜晶体管的一侧，所述N型半导体的厚度大于所述P型半导体，所述N型半导体背向所述P型半导体的一面为粗糙面。\n\n[0006]其中，所述显示面板还包括钝化层及有机层，所述有机层层叠于所述薄膜晶体管上，且所述有机层上设有开口槽，所述微型发光二极管收容所述开口槽内并与所述薄膜晶体管电连接；所述钝化层层叠并覆盖所述有机层及所述微型发光二极管。\n\n[0007]其中，所述钝化层为有机或无机绝缘膜层。\n\n[0008]其中，所述显示面板还包括第一电极及第二电极，所述第一电极层叠于所述薄膜晶体管上并位于所述有机层的开口槽位置，所述薄膜晶体管包括源漏极，所述第一电极一端与所述源漏极连接，另一端与所述P型半导体进行电连接；所述第二电极层叠于所述钝化层上方，且所述第二电极的一端通过穿过所述钝化层与所述N型半导体进行电连接。\n\n[0009]其中，所述P型半导体朝向所述第一电极的一面层叠有透明导电层，所述第一电极通过所述透明导电层与所述P型半导体进行电连接。\n\n[0010]其中，所述N型半导体背向所述P型半导体的一侧设有N型金属电极，所述第二电极通过所述N型金属电极与所述N型半导体进行电连接。\n\n[0011]其中，所述N型半导体的厚度大于2μm，所述P型半导体的厚度小于200nm。\n\n[0012]本发明还提供一种显示面板的制作方法，包括步骤：\n\n[0013]提供一形成有薄膜晶体管及有机层的基板，所述有机层层叠于所述薄膜晶体管上，在所述有机层上形成开口槽；\n\n[0014]在所述开口槽内设一微型发光二极管，并将所述微型发光二极管与所述薄膜晶体管电连接，所述微型发光二极管包括P型半导体、与所述P型半导体相对设置的N型半导体及设于所述P型半导体与所述N型半导体之间的发光层，所述N型半导体设于所述P型半导体背向所述薄膜晶体管一侧，且所述N型半导体的厚度大于所述P型半导体；\n\n[0015]通过等离子体表面处理工艺处理所述N型半导体背向所述P型半导体的一面，使所述N型半导体背向所述P型半导体的一面粗化；\n\n[0016]在所述有机层及所述微型发光二极管上形成钝化层；\n\n[0017]在所述钝化层上形成第二电极，且所述第二电极的一端与所述N型半导体电连接。\n\n[0018]其中，所述等离子体表面处理工艺中的形成等离子体的气体为H2、Ar、N2或NH3中任意一种或几种。\n\n[0019]本发明还提供一种显示设备，包括显示设备本体及上述的显示面板，所述显示面板与所述显示设备本体电连接。本发明提供的所述显示面板，在所述Micro LED芯片与薄膜晶体管(TFT)电连接时，使所述P型半导体靠近TFT，N型半导体设于P型半导体背向TFT的一侧，并对所述N型半导体背向所述P型半导体的一面处理为粗糙面。由于所述N型半导体的厚度大于所述P型半导体的厚度，因此，对所述N型半导体进行粗化时，不会影响所述N型半导体材料的晶体质量，进而实现了增加出光效率的同时，避免所述Micro LED芯片的漏电流的产生。\n\n附图说明\n\n[0020]为更清楚地阐述本发明的构造特征和功效，下面结合附图与具体实施例来对其进行详细说明。\n\n[0021]图1是本发明实施例的显示面板的结构示意图；\n\n[0022]图2是图1所述本发明实施例的显示面板制造流程图；\n\n[0023]图3是本发明实施例的显示面板制造中步骤“提供一形成有薄膜晶体管及有机层的基板，并在所述有机层上形成开口槽”的具体流程图；\n\n[0024]图4-10是本发明实施的显示面板各制造步骤中的截面示意图。\n\n具体实施例\n\n[0025]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。其中，附图仅用于示例性说明，表示的仅是示意图，不能理解为对本专利的限制。\n\n[0026]请参阅图1，本发明提供一种显示面板100。所述显示面板100包括基板10、设于所述基板10上的薄膜晶体管20，及设于所述薄膜晶体管20上并与所述薄膜晶体管20电连接的微型发光二极管30。\n\n[0027]所述基板10可以为刚性基板或者为柔性基板。本实施例中，所述基板10为刚性的玻璃基板。\n\n[0028]本实施例中，所述薄膜晶体管20为LTPS-TFT。所述薄膜晶体管20包括缓冲层21、有源层22、栅极绝缘层23、栅极24、介电层25、源漏极26、阻隔层27及平坦层28。所述缓冲层21层叠并覆盖与所述基板10上，所述有源层22层叠于所述缓冲层21上。所述有缘层22包括沟道层221及分设于所述沟道层221两侧的第一掺杂区222及第二掺杂区223。所述栅极绝缘层23覆盖所述有有缘层22及未被所述有缘层22覆盖的所述缓冲层21。所述栅极24层叠于所述栅极绝缘层23上，且其垂直方向的投影位于所述都到层221内。所述介电层25层叠与所述栅极24上，并覆盖所述栅极24及未被所述栅极24覆盖的栅极绝缘层23。自所述介电层25背向所述栅极绝缘层23的一面向所述有源层22延伸有两个过孔，且两个所述过孔分别位于所述第一掺杂区222及所述第二掺杂区223上。所述源漏极26设于所述介电层25上，且所述源漏极26包括源极及漏极，所述源极与所述漏极分别通过所述过孔与穿过所述介电层25及所述栅极绝缘层23分别与所述第一掺杂区222及所述第二掺杂区223进行电连接。所述阻隔层27层叠于所述源漏极26上并覆盖所述源漏极26及未被所述源漏极26覆盖的所述介电层25。所述平坦层28层叠于所述阻隔层27上。自所述平坦层28背向所述阻隔层27的一面向所述平坦层28内部延伸有一穿孔，所述穿孔延伸至所述源漏极26。可以理解的是，根据实际需要，所述薄膜晶体管20还可以为其它类型的薄膜晶体管，如普通TFT、LTPS-TFT、HTPS-TFT等其它类型的薄膜晶体管。\n\n[0029]所述微型发光二极管30包括依次层叠的透明导电层31、P型半导体32、发光层33、N型半导体34。所述P型半导体32与所述N型半导体34相对且平行设置，所述发光层33设于所述P型半导体32与所述N型半导体34之间。所述P型半导体32与所述透明导电层31进行贴合，从而实现所述P型半导体32与所述透明导电层31的电连接。并且，所述P型半导体32通过所述透明导电层31与所述薄膜晶体管20进行电连接。通过所述透明导电层31将所述薄膜晶体管20传输的电流或电压均匀分布于所述P型半导体上，能够促进所述发光层33各个位置的均匀发光。\n\n[0030]所述N型半导体34设于所述P型半导体32背向所述薄膜晶体管20的一侧，且所述N型半导体34背向所述P型半导体32的一面为粗糙面。通过将所述N型半导体34背向所述P型半导体32的一面设置为粗糙面，使得从所述N型半导体与所述P型半导体之间的所述出光层33发光从所述N型半导体侧的出光效率增加。并且，为了尽量减少所述N型半导体34的晶格缺陷，一般所述N型半导体34的厚度会大于所述P型半导体32的厚度，因此，将所述N型半导体34的一面设置为粗糙面，不会影响所述N型半导体34的中的晶体质量，从而不会增加所述Micro LED芯片30的漏电流，实现在增加出光效率的同时，减少所述Micro LED芯片30的漏电流的产生。本发明中，所述N型半导体的厚度大于2μm，所述P型半导体的厚度小于200nm。进一步的，本实施例中，所述N型半导体34背向所述P型半导体32的一面还设置有N型金属电极。\n\n[0031]所述显示面板100还包括有机层40、钝化层50、第一电极60及第二电极70。所述有机层40层叠于所述薄膜晶体管20上。所述有机层40上设有开口槽41，且所述微型发光二极管30收容于所述开口槽41内。所述钝化层50层叠于所述有机层40上并覆盖所述微型发光二极管30。所述钝化层50为有机或无机绝缘膜层。\n\n[0032]所述第一电极60设于所述薄膜晶体管20的平坦层28上，并内嵌于所述有机层40内，即所述有机层40覆盖所述第一电极60及未被所述第一电极60覆盖的平坦层28。并且，所述开口槽41的底壁为所述第一电极60，即在所述有机层40上设置开口槽41，并露出部分所述第一电极60。所述第一电极60的一端通过所述穿孔与所述薄膜晶体管20的源漏极26进行电连接，另一端与所述P透明导电层31通过键合材料层35进行电连接，从而通过所述第一电极60实现所述微型发光二极管30与所述薄膜晶体管20的电连接。所述第二电极70层叠于所述钝化层40上，所述第二电极70的一端通过设于所述钝化层40上的过孔与所述N型金属电极35进行电连接。本发明中将所述第二电极70设于所述钝化层40上，通过所述钝化层40将所述第一电极60及所述第二电极70隔离开，防止所述第一电极60与所述第二电极70产生短路现象。\n\n[0033]本发明中，通过所述第一电极60及所述第二电极70向所述微型发光二极管30加载电流，使得所述微型发光二极管30的所述发光层33进行发光，发出的光线经过所述N型半导体34透出。并且，由于所述N型半导体34背向所述P型半导体32的一面为粗糙面，从而减少所述N型半导体侧对光线的全反射，从而增加所述N型半导体侧的出光效率。并且，由于所述N型半导体34的厚度较大，将所述N型半导体34的一面设置为粗糙面时，不会影响所述N型半导体34的中的晶体质量，从而不会增加所述Micro LED芯片30的漏电流，进而实现在增加出光效率的同时，减少所述Micro LED芯片30的漏电流的产生。\n\n[0034]请参阅图2，本发明还所述显示面板100的制作方法，包括：\n\n[0035]步骤210、提供一形成有薄膜晶体管20及有机层40的基板10，所述有机层40层叠于所述薄膜晶体管20上，在所述有机层40上形成开口槽41。\n\n[0036]具体的，请参阅图3，所述步骤210包括：\n\n[0037]步骤211、请参阅图4，提供一基板10，在所述基板10上形成薄膜晶体管20。所述基板10可以为刚性基板或者为柔性基板。本实施例中，所述基板10为刚性的玻璃基板。\n\n[0038]本实施例中，所述薄膜晶体管20为LTPS-TFT。所述薄膜晶体管20包括缓冲层21、有缘层22、栅极绝缘层23、栅极24、介电层25、源漏极26、阻隔层27及平坦层28。通过气相沉积、旋涂或喷墨打印等工艺在所述基板10上形成所述缓冲层21，使所述缓冲层21层叠并覆盖与所述基板10上。并在所述缓冲层21上形成有源层22，所述有源层22层叠于所述缓冲层21上。对所述有源层22的两端分别进行N离子掺杂及P离子掺杂，使得所述有源层22形成沟道层221及分设于所述沟道层221两侧的第一掺杂区222及第二掺杂区223。在所述有源层22及未被所述有源层22覆盖的所述缓冲层21上形成所述栅极绝缘层23，所述栅极绝缘层23覆盖所述有源层22及未被所述有源层22覆盖的所述缓冲层21。在所述栅极绝缘层23上形成所述栅极24，所述栅极24垂直方向的投影位于所述沟道层221内。在所述栅极24及未被所述栅极24覆盖的栅极绝缘层23上形成所述介电层25，所述介电层25覆盖所述栅极24及未被所述栅极24覆盖的栅极绝缘层23。自所述介电层25背向所述栅极绝缘层23的一面向所述有源层22延伸形成两个过孔，且两个所述过孔分别位于所述第一掺杂区222及所述第二掺杂区223上。在所述介电层25上形成所述源漏极26，并使所述源漏极26通过得到过孔穿过所述介电层25及所述栅极绝缘层23分别与所述第一掺杂区222及所述第二掺杂区223进行电连接。在所述源漏极26上形成所述阻隔层27，使所述阻隔层27覆盖所述源漏极26及未被所述源漏极26覆盖的所述介电层25。在所述阻隔层27形成所述平坦层28。自所述平坦层28背向所述阻隔层27的一面向所述源漏极26延伸一穿孔，且所述穿孔位于所述源漏极26上。可以理解的是，根据实际需要，所述薄膜晶体管20还可以为其它类型的薄膜晶体管，如普通TFT、HTPS-TFT等其它类型的薄膜晶体管。\n\n[0039]步骤212、请参阅图4，在所述薄膜晶体管20上形成一第一电极60，所述第一电极60与所述薄膜晶体管20进行电连接。\n\n[0040]通过电镀、磁控溅射、气相沉积等工艺在所述薄膜晶体管20的所述平坦层26上形成一第一金属层，进一步对所述第一金属层进行图案化得到所述第一电极60。并使所述第一电极60通过所述穿孔与所述源漏极26进行电连接。\n\n[0041]步骤213、请参阅图6，在所述第一电极60上及未被所述第一电极60覆盖的所述薄膜晶体管20上沉积有机材料层42。\n\n[0042]本实施例中，所述有机材料层42为有机光阻材料。通过旋涂或喷墨打印等工艺沉积形成于所述第一电极60上及未被所述第一电极60覆盖的所述薄膜晶体管20。\n\n[0043]步骤214、请参阅图7，图案化所述有机材料层42，得到有机层40，所述有机层40上设有开口槽41。\n\n[0044]通过曝光、显影等将所述有机材料层42进行图案化，得到所述有机层40。所述有机层40上包括开口槽41，所述开口槽41为圆台状，其开口方向背离所述薄膜晶体管20，且其开口的大小大于所述底壁的大小。本发明中，对所述有机材料层42进行图案化，除去覆盖在所述第一电极60的所述有机材料层42，露出所述第一电极60并形成所述开口槽41，使得所述开口槽41的底壁为所述第一电极60。\n\n[0045]步骤220、请参阅图8，在所述开口槽41内设一微型发光二极管30，并将所述微型发光二极管30与所述第一电极60键合，所述微型发光二极管30包括P型半导体32、与所述P型半导体32相对设置的N型半导体34及设于所述P型半导体32与所述N型半导体34之间的发光层33。\n\n[0046]本发明中，所述N型半导体34设于所述P型半导体32背向所述薄膜晶体管20的一侧，且所述N型半导体34的厚度大于所述P型半导体32。本实施例中，所述P型半导体32背向所述N型半导体34的一侧还设有透明导电层31，并将所述透明导电层31与所述第一电极60通过键合材料层进行键合，以实现所述微型发光二极管30与薄膜晶体管20的电连接。\n\n[0047]步骤230、请参阅图9，通过等离子体表面工艺处理所述N型半导体34背向所述P型半导体32的一面，使所述N型半导体34背向所述P型半导体32的一面粗化。\n\n[0048]本实施例中，通过所述等离子体表面处理工艺对所述N型半导体34背向所述P型半导体32的一面进行处理。所述等离子体表面处理工艺为将一定的气体进行处理形成等离子体，通过所述等离子体对物体表面进行处理。本发明中，形成所述等离子体的气体还可以为H2、Ar、N2或NH3中任意一种或几种气体。本实施例中，形成所述等离子体的气体为H2。通过所述等离子体表面处理工艺，使所述N型半导体32背向所述P型半导体的一面粗糙化，从而减少所述N型半导体32对所述发光层33发出光线的全反射，进而增加所述显示面板100的透光率。\n\n[0049]步骤240、请参阅图10，在所述有机层40及所述微型发光二极管30上沉积钝化层70。\n\n[0050]通过旋涂或喷墨打印等工艺在所述有机层40及所述微型发光二极管30上沉积钝化材料层71，所述钝化材料层71覆盖所述有机层40及所述微型发光二极管30。进一步的，过刻蚀工艺图案化所述钝化材料层71，得到钝化层70。所述钝化层70包括开孔，所述开孔从所述钝化层70背向所述有机层60的一面向所述钝化层70内部延伸至所述N型半导体上。\n\n[0051]步骤250、请重新参阅图1，在所述钝化层70上形成第二电极50，且所述第二电极50的一端穿过所述开孔与所述N型半导体34电连接。\n\n[0052]通过电镀、磁控溅射、气相沉积等工艺在所述钝化层70上形成一第二金属层，进一步对所述第二金属层进行图案化得到所述第二电极50。并且，所述第二电极50通过所述开孔与所述N型半导体32进行电连接。本实施例中，所述N型半导体上还层叠并电连接有N型金属电极，通过所述N型金属电极与所述第二电极50实现所述第二电极50与所述N型半导体32的电连接，使得所述第二电极50与所述N型半导体32之间的电连接更加的牢固。\n\n[0053]本发明还提供一种显示设备。所述显示设备包括显示设备本体及上述的显示面板，所述显示面板与所述显示设备本体电连接。所述显示设备可以为手机、电脑、平板、电视等电子显示设备。\n\n[0054]以上所述为本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也视为本发明的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示面板及其制作方法，以及一种显示设备。\n\n背景技术\n\n[0002]微型发光二极管(Micro LED)的耗电量仅为液晶显示屏(LCD)的十分之一。MicroLED与有机发光二极管(OLED)一样属于自发光器件，具有低功耗、厚度小、质量小、体积小、功耗低、反应快的特点，且不具有OLED色衰的缺点，因此成为面板行业研究的热点。\n\n[0003]现有技术中，Micro LED芯片与薄膜晶体管(TFT)电连接时，一般N型半导体靠近TFT，P型半导体设于N型半导体背向TFT的一侧。由于光从设于所述P型半导体及所述N型半导体之间的发光层射出，并进入P型半导体层进行出射。但是，P型半导体的出光面为光面时，由于全反射会导致部分光线重新进入发光层转化为热量，导致出光效率降低。因此，为了增加出光，现有技术中对P型半导体层进行粗化处理，以减少光的全反射，增加出光效率。但是由于P型半导体层相对薄，厚度在200nm以内，粗化会导致P型半导体材料的晶体质量下降，从而使得所述Micro LED芯片的漏电流增加。\n\n发明内容\n\n[0004]本发明的提供一种显示面板，在增加出光效率的同时，减少所述Micro LED芯片的漏电流的产生。\n\n[0005]所述显示面板包括薄膜晶体管，设于所述薄膜晶体管上并与所述薄膜晶体管电连接的微型发光二极管，所述微型发光二极管包括P型半导体、与所述P型半导体相对设置的N型半导体、设于所述P型半导体与所述N型半导体之间的发光层，所述N型半导体设于所述P型半导体背向所述薄膜晶体管的一侧，所述N型半导体的厚度大于所述P型半导体，所述N型半导体背向所述P型半导体的一面为粗糙面。\n\n[0006]其中，所述显示面板还包括钝化层及有机层，所述有机层层叠于所述薄膜晶体管上，且所述有机层上设有开口槽，所述微型发光二极管收容所述开口槽内并与所述薄膜晶体管电连接；所述钝化层层叠并覆盖所述有机层及所述微型发光二极管。\n\n[0007]其中，所述钝化层为有机或无机绝缘膜层。\n\n[0008]其中，所述显示面板还包括第一电极及第二电极，所述第一电极层叠于所述薄膜晶体管上并位于所述有机层的开口槽位置，所述薄膜晶体管包括源漏极，所述第一电极一端与所述源漏极连接，另一端与所述P型半导体进行电连接；所述第二电极层叠于所述钝化层上方，且所述第二电极的一端通过穿过所述钝化层与所述N型半导体进行电连接。\n\n[0009]其中，所述P型半导体朝向所述第一电极的一面层叠有透明导电层，所述第一电极通过所述透明导电层与所述P型半导体进行电连接。\n\n[0010]其中，所述N型半导体背向所述P型半导体的一侧设有N型金属电极，所述第二电极通过所述N型金属电极与所述N型半导体进行电连接。\n\n[0011]其中，所述N型半导体的厚度大于2μm，所述P型半导体的厚度小于200nm。\n\n[0012]本发明还提供一种显示面板的制作方法，包括步骤：\n\n[0013]提供一形成有薄膜晶体管及有机层的基板，所述有机层层叠于所述薄膜晶体管上，在所述有机层上形成开口槽；\n\n[0014]在所述开口槽内设一微型发光二极管，并将所述微型发光二极管与所述薄膜晶体管电连接，所述微型发光二极管包括P型半导体、与所述P型半导体相对设置的N型半导体及设于所述P型半导体与所述N型半导体之间的发光层，所述N型半导体设于所述P型半导体背向所述薄膜晶体管一侧，且所述N型半导体的厚度大于所述P型半导体；\n\n[0015]通过等离子体表面处理工艺处理所述N型半导体背向所述P型半导体的一面，使所述N型半导体背向所述P型半导体的一面粗化；\n\n[0016]在所述有机层及所述微型发光二极管上形成钝化层；\n\n[0017]在所述钝化层上形成第二电极，且所述第二电极的一端与所述N型半导体电连接。\n\n[0018]其中，所述等离子体表面处理工艺中的形成等离子体的气体为H2、Ar、N2或NH3中任意一种或几种。\n\n[0019]本发明还提供一种显示设备，包括显示设备本体及上述的显示面板，所述显示面板与所述显示设备本体电连接。本发明提供的所述显示面板，在所述Micro LED芯片与薄膜晶体管(TFT)电连接时，使所述P型半导体靠近TFT，N型半导体设于P型半导体背向TFT的一侧，并对所述N型半导体背向所述P型半导体的一面处理为粗糙面。由于所述N型半导体的厚度大于所述P型半导体的厚度，因此，对所述N型半导体进行粗化时，不会影响所述N型半导体材料的晶体质量，进而实现了增加出光效率的同时，避免所述Micro LED芯片的漏电流的产生。\n\n附图说明\n\n[0020]为更清楚地阐述本发明的构造特征和功效，下面结合附图与具体实施例来对其进行详细说明。\n\n[0021]图1是本发明实施例的显示面板的结构示意图；\n\n[0022]图2是图1所述本发明实施例的显示面板制造流程图；\n\n[0023]图3是本发明实施例的显示面板制造中步骤“提供一形成有薄膜晶体管及有机层的基板，并在所述有机层上形成开口槽”的具体流程图；\n\n[0024]图4-10是本发明实施的显示面板各制造步骤中的截面示意图。\n\n具体实施例\n\n[0025]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。其中，附图仅用于示例性说明，表示的仅是示意图，不能理解为对本专利的限制。\n\n[0026]请参阅图1，本发明提供一种显示面板100。所述显示面板100包括基板10、设于所述基板10上的薄膜晶体管20，及设于所述薄膜晶体管20上并与所述薄膜晶体管20电连接的微型发光二极管30。\n\n[0027]所述基板10可以为刚性基板或者为柔性基板。本实施例中，所述基板10为刚性的玻璃基板。\n\n[0028]本实施例中，所述薄膜晶体管20为LTPS-TFT。所述薄膜晶体管20包括缓冲层21、有源层22、栅极绝缘层23、栅极24、介电层25、源漏极26、阻隔层27及平坦层28。所述缓冲层21层叠并覆盖与所述基板10上，所述有源层22层叠于所述缓冲层21上。所述有缘层22包括沟道层221及分设于所述沟道层221两侧的第一掺杂区222及第二掺杂区223。所述栅极绝缘层23覆盖所述有有缘层22及未被所述有缘层22覆盖的所述缓冲层21。所述栅极24层叠于所述栅极绝缘层23上，且其垂直方向的投影位于所述都到层221内。所述介电层25层叠与所述栅极24上，并覆盖所述栅极24及未被所述栅极24覆盖的栅极绝缘层23。自所述介电层25背向所述栅极绝缘层23的一面向所述有源层22延伸有两个过孔，且两个所述过孔分别位于所述第一掺杂区222及所述第二掺杂区223上。所述源漏极26设于所述介电层25上，且所述源漏极26包括源极及漏极，所述源极与所述漏极分别通过所述过孔与穿过所述介电层25及所述栅极绝缘层23分别与所述第一掺杂区222及所述第二掺杂区223进行电连接。所述阻隔层27层叠于所述源漏极26上并覆盖所述源漏极26及未被所述源漏极26覆盖的所述介电层25。所述平坦层28层叠于所述阻隔层27上。自所述平坦层28背向所述阻隔层27的一面向所述平坦层28内部延伸有一穿孔，所述穿孔延伸至所述源漏极26。可以理解的是，根据实际需要，所述薄膜晶体管20还可以为其它类型的薄膜晶体管，如普通TFT、LTPS-TFT、HTPS-TFT等其它类型的薄膜晶体管。\n\n[0029]所述微型发光二极管30包括依次层叠的透明导电层31、P型半导体32、发光层33、N型半导体34。所述P型半导体32与所述N型半导体34相对且平行设置，所述发光层33设于所述P型半导体32与所述N型半导体34之间。所述P型半导体32与所述透明导电层31进行贴合，从而实现所述P型半导体32与所述透明导电层31的电连接。并且，所述P型半导体32通过所述透明导电层31与所述薄膜晶体管20进行电连接。通过所述透明导电层31将所述薄膜晶体管20传输的电流或电压均匀分布于所述P型半导体上，能够促进所述发光层33各个位置的均匀发光。\n\n[0030]所述N型半导体34设于所述P型半导体32背向所述薄膜晶体管20的一侧，且所述N型半导体34背向所述P型半导体32的一面为粗糙面。通过将所述N型半导体34背向所述P型半导体32的一面设置为粗糙面，使得从所述N型半导体与所述P型半导体之间的所述出光层33发光从所述N型半导体侧的出光效率增加。并且，为了尽量减少所述N型半导体34的晶格缺陷，一般所述N型半导体34的厚度会大于所述P型半导体32的厚度，因此，将所述N型半导体34的一面设置为粗糙面，不会影响所述N型半导体34的中的晶体质量，从而不会增加所述Micro LED芯片30的漏电流，实现在增加出光效率的同时，减少所述Micro LED芯片30的漏电流的产生。本发明中，所述N型半导体的厚度大于2μm，所述P型半导体的厚度小于200nm。进一步的，本实施例中，所述N型半导体34背向所述P型半导体32的一面还设置有N型金属电极。\n\n[0031]所述显示面板100还包括有机层40、钝化层50、第一电极60及第二电极70。所述有机层40层叠于所述薄膜晶体管20上。所述有机层40上设有开口槽41，且所述微型发光二极管30收容于所述开口槽41内。所述钝化层50层叠于所述有机层40上并覆盖所述微型发光二极管30。所述钝化层50为有机或无机绝缘膜层。\n\n[0032]所述第一电极60设于所述薄膜晶体管20的平坦层28上，并内嵌于所述有机层40内，即所述有机层40覆盖所述第一电极60及未被所述第一电极60覆盖的平坦层28。并且，所述开口槽41的底壁为所述第一电极60，即在所述有机层40上设置开口槽41，并露出部分所述第一电极60。所述第一电极60的一端通过所述穿孔与所述薄膜晶体管20的源漏极26进行电连接，另一端与所述P透明导电层31通过键合材料层35进行电连接，从而通过所述第一电极60实现所述微型发光二极管30与所述薄膜晶体管20的电连接。所述第二电极70层叠于所述钝化层40上，所述第二电极70的一端通过设于所述钝化层40上的过孔与所述N型金属电极35进行电连接。本发明中将所述第二电极70设于所述钝化层40上，通过所述钝化层40将所述第一电极60及所述第二电极70隔离开，防止所述第一电极60与所述第二电极70产生短路现象。\n\n[0033]本发明中，通过所述第一电极60及所述第二电极70向所述微型发光二极管30加载电流，使得所述微型发光二极管30的所述发光层33进行发光，发出的光线经过所述N型半导体34透出。并且，由于所述N型半导体34背向所述P型半导体32的一面为粗糙面，从而减少所述N型半导体侧对光线的全反射，从而增加所述N型半导体侧的出光效率。并且，由于所述N型半导体34的厚度较大，将所述N型半导体34的一面设置为粗糙面时，不会影响所述N型半导体34的中的晶体质量，从而不会增加所述Micro LED芯片30的漏电流，进而实现在增加出光效率的同时，减少所述Micro LED芯片30的漏电流的产生。\n\n[0034]请参阅图2，本发明还所述显示面板100的制作方法，包括：\n\n[0035]步骤210、提供一形成有薄膜晶体管20及有机层40的基板10，所述有机层40层叠于所述薄膜晶体管20上，在所述有机层40上形成开口槽41。\n\n[0036]具体的，请参阅图3，所述步骤210包括：\n\n[0037]步骤211、请参阅图4，提供一基板10，在所述基板10上形成薄膜晶体管20。所述基板10可以为刚性基板或者为柔性基板。本实施例中，所述基板10为刚性的玻璃基板。\n\n[0038]本实施例中，所述薄膜晶体管20为LTPS-TFT。所述薄膜晶体管20包括缓冲层21、有缘层22、栅极绝缘层23、栅极24、介电层25、源漏极26、阻隔层27及平坦层28。通过气相沉积、旋涂或喷墨打印等工艺在所述基板10上形成所述缓冲层21，使所述缓冲层21层叠并覆盖与所述基板10上。并在所述缓冲层21上形成有源层22，所述有源层22层叠于所述缓冲层21上。对所述有源层22的两端分别进行N离子掺杂及P离子掺杂，使得所述有源层22形成沟道层221及分设于所述沟道层221两侧的第一掺杂区222及第二掺杂区223。在所述有源层22及未被所述有源层22覆盖的所述缓冲层21上形成所述栅极绝缘层23，所述栅极绝缘层23覆盖所述有源层22及未被所述有源层22覆盖的所述缓冲层21。在所述栅极绝缘层23上形成所述栅极24，所述栅极24垂直方向的投影位于所述沟道层221内。在所述栅极24及未被所述栅极24覆盖的栅极绝缘层23上形成所述介电层25，所述介电层25覆盖所述栅极24及未被所述栅极24覆盖的栅极绝缘层23。自所述介电层25背向所述栅极绝缘层23的一面向所述有源层22延伸形成两个过孔，且两个所述过孔分别位于所述第一掺杂区222及所述第二掺杂区223上。在所述介电层25上形成所述源漏极26，并使所述源漏极26通过得到过孔穿过所述介电层25及所述栅极绝缘层23分别与所述第一掺杂区222及所述第二掺杂区223进行电连接。在所述源漏极26上形成所述阻隔层27，使所述阻隔层27覆盖所述源漏极26及未被所述源漏极26覆盖的所述介电层25。在所述阻隔层27形成所述平坦层28。自所述平坦层28背向所述阻隔层27的一面向所述源漏极26延伸一穿孔，且所述穿孔位于所述源漏极26上。可以理解的是，根据实际需要，所述薄膜晶体管20还可以为其它类型的薄膜晶体管，如普通TFT、HTPS-TFT等其它类型的薄膜晶体管。\n\n[0039]步骤212、请参阅图4，在所述薄膜晶体管20上形成一第一电极60，所述第一电极60与所述薄膜晶体管20进行电连接。\n\n[0040]通过电镀、磁控溅射、气相沉积等工艺在所述薄膜晶体管20的所述平坦层26上形成一第一金属层，进一步对所述第一金属层进行图案化得到所述第一电极60。并使所述第一电极60通过所述穿孔与所述源漏极26进行电连接。\n\n[0041]步骤213、请参阅图6，在所述第一电极60上及未被所述第一电极60覆盖的所述薄膜晶体管20上沉积有机材料层42。\n\n[0042]本实施例中，所述有机材料层42为有机光阻材料。通过旋涂或喷墨打印等工艺沉积形成于所述第一电极60上及未被所述第一电极60覆盖的所述薄膜晶体管20。\n\n[0043]步骤214、请参阅图7，图案化所述有机材料层42，得到有机层40，所述有机层40上设有开口槽41。\n\n[0044]通过曝光、显影等将所述有机材料层42进行图案化，得到所述有机层40。所述有机层40上包括开口槽41，所述开口槽41为圆台状，其开口方向背离所述薄膜晶体管20，且其开口的大小大于所述底壁的大小。本发明中，对所述有机材料层42进行图案化，除去覆盖在所述第一电极60的所述有机材料层42，露出所述第一电极60并形成所述开口槽41，使得所述开口槽41的底壁为所述第一电极60。\n\n[0045]步骤220、请参阅图8，在所述开口槽41内设一微型发光二极管30，并将所述微型发光二极管30与所述第一电极60键合，所述微型发光二极管30包括P型半导体32、与所述P型半导体32相对设置的N型半导体34及设于所述P型半导体32与所述N型半导体34之间的发光层33。\n\n[0046]本发明中，所述N型半导体34设于所述P型半导体32背向所述薄膜晶体管20的一侧，且所述N型半导体34的厚度大于所述P型半导体32。本实施例中，所述P型半导体32背向所述N型半导体34的一侧还设有透明导电层31，并将所述透明导电层31与所述第一电极60通过键合材料层进行键合，以实现所述微型发光二极管30与薄膜晶体管20的电连接。\n\n[0047]步骤230、请参阅图9，通过等离子体表面工艺处理所述N型半导体34背向所述P型半导体32的一面，使所述N型半导体34背向所述P型半导体32的一面粗化。\n\n[0048]本实施例中，通过所述等离子体表面处理工艺对所述N型半导体34背向所述P型半导体32的一面进行处理。所述等离子体表面处理工艺为将一定的气体进行处理形成等离子体，通过所述等离子体对物体表面进行处理。本发明中，形成所述等离子体的气体还可以为H2、Ar、N2或NH3中任意一种或几种气体。本实施例中，形成所述等离子体的气体为H2。通过所述等离子体表面处理工艺，使所述N型半导体32背向所述P型半导体的一面粗糙化，从而减少所述N型半导体32对所述发光层33发出光线的全反射，进而增加所述显示面板100的透光率。\n\n[0049]步骤240、请参阅图10，在所述有机层40及所述微型发光二极管30上沉积钝化层70。\n\n[0050]通过旋涂或喷墨打印等工艺在所述有机层40及所述微型发光二极管30上沉积钝化材料层71，所述钝化材料层71覆盖所述有机层40及所述微型发光二极管30。进一步的，过刻蚀工艺图案化所述钝化材料层71，得到钝化层70。所述钝化层70包括开孔，所述开孔从所述钝化层70背向所述有机层60的一面向所述钝化层70内部延伸至所述N型半导体上。\n\n[0051]步骤250、请重新参阅图1，在所述钝化层70上形成第二电极50，且所述第二电极50的一端穿过所述开孔与所述N型半导体34电连接。\n\n[0052]通过电镀、磁控溅射、气相沉积等工艺在所述钝化层70上形成一第二金属层，进一步对所述第二金属层进行图案化得到所述第二电极50。并且，所述第二电极50通过所述开孔与所述N型半导体32进行电连接。本实施例中，所述N型半导体上还层叠并电连接有N型金属电极，通过所述N型金属电极与所述第二电极50实现所述第二电极50与所述N型半导体32的电连接，使得所述第二电极50与所述N型半导体32之间的电连接更加的牢固。\n\n[0053]本发明还提供一种显示设备。所述显示设备包括显示设备本体及上述的显示面板，所述显示面板与所述显示设备本体电连接。所述显示设备可以为手机、电脑、平板、电视等电子显示设备。\n\n[0054]以上所述为本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也视为本发明的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10602, 23656, '技术领域\n\n[0001]本发明涉及显示器技术领域,尤其涉及一种直下式背光模组，还涉及包含所述直下式背光模组的液晶显示器。\n\n背景技术\n\n[0002]液晶显示器(Liquid Crystal Display，LCD)，为平面超薄的显示设备，它由一定数量的彩色或黑白像素组成，放置于光源或者反射面前方。液晶显示器功耗很低，并且具有高画质、体积小、重量轻的特点，因此倍受大家青睐，成为显示器的主流。现有市场上的液晶显示器大部分为背光型液晶显示器，包括液晶面板及背光模组，液晶面板与背光模组相对设置，背光模组提供显示光源给液晶面板，以使液晶面板显示影像。\n\n[0003]近年来，随着高动态范围(High-Dynamic Range，HDR)技术越来越多的应用于数字摄影、电影艺术、电视机等领域。要在液晶显示器中实现HDR技术，对液晶显示器提出了特殊的技术需求，液晶显示器应能够实现分区块控制。液晶显示器的分区越多，local dimming(局部调光)的效果越好，动态对比度越高，画质更佳。而在液晶显示器上引入localdimming技术，通常都会对液晶显示器的背光进行分区处理，几颗灯一区或者一颗灯一区，主板实时根据图像信号的亮度算法对每个区域进行亮度分析，根据分析结果控制背光驱动芯片驱动背光中的每一区，从而达到对背光进行实时亮度调节的目的，表现为亮的区域更亮、暗的地方更暗，从而提高动态对比度并实现节能。\n\n[0004]背光模组主要包括直下式背光模组以及侧入式背光模组，直下式背光模组由于LED的分区与液晶玻璃的分区可以一一对应，局部调光的效果好，因此成为市场主流，特别是对于大尺寸的液晶显示器，由于背光的面积较大，LED灯的间距较大，各个分区之间的背光串扰很小，HDR效果也较好。但是对于小尺寸的液晶显示器，背光中LED灯的间距小，无法做到有效的多分区，而且分区之间光线的串扰较大，其HDR效果较差。\n\n发明内容\n\n[0005]鉴于现有技术存在的不足，本发明提供了一种直下式背光模组，所述直下式背光模组可以有效地减小背光分区之间光线的串扰，提升HDR效果。\n\n[0006]为了达到上述的目的，本发明采用了如下的技术方案：\n\n[0007]一种直下式背光模组，包括背板以及设置在所述背板上的光源，其中，所述光源包括印刷电路板以及电性连接在所述印刷电路板上的多个micro-LED芯片，所述多个micro-LED芯片在所述印刷电路板上呈矩阵阵列排布，任意相邻的两个micro-LED芯片之间设置有遮光单元；所述印刷电路板上还连接有背光驱动芯片，所述背光驱动芯片独立地驱动每一个所述micro-LED芯片。\n\n[0008]其中，所述micro-LED芯片为发出单色蓝光的micro-LED芯片，所述直下式背光模组还包括量子点薄膜层，所述量子点薄膜层设置在所述光源的上方，所述量子点薄膜层在所述micro-LED芯片发出的蓝光的激发下发出红光和绿光。\n\n[0009]其中，所述量子点薄膜层与所述光源之间具有间隙，所述间隙的高度为0.3～0.5mm。\n\n[0010]其中，所述量子点薄膜层的厚度为80～100μm。\n\n[0011]其中，所述遮光单元从所述印刷电路板上凸起的高度不小于所述micro-LED芯片从所述印刷电路板上凸起的高度。\n\n[0012]其中，所述遮光单元的材料为遮光胶或者是遮光油墨。\n\n[0013]其中，任意相邻的两个micro-LED芯片之间的间距为0.15～0.25mm。\n\n[0014]其中，所述背板上设置有散热板，所述印刷电路板设置在所述散热板上。\n\n[0015]其中，所述多个micro-LED芯片在所述印刷电路板上被划分为多个控光区，每一所述控光区包括若干个所述micro-LED芯片。\n\n[0016]本发明的另一方面是提供一种液晶显示器，包括液晶面板及背光模组，液晶面板与背光模组相对设置，背光模组提供显示光源给液晶面板，以使液晶面板显示影像，其中，所述背光模组为前述的直下式背光模组。\n\n[0017]本发明实施例提供的直下式背光模组，其中的光源包括呈矩阵阵列排布在印刷电路板上的多个micro-LED芯片，任意相邻的两个micro-LED芯片之间设置有遮光单元，遮光单元可以限制micro-LED芯片的出光角度。由此，在进行局部调光的分区驱动时，分区之间的光线可以有效地相互间隔，减小了背光分区之间光线的串扰，提升了显示器的HDR效果。所述直下式背光模组应用于小尺寸的液晶显示器时，其提升显示器的HDR效果尤为明显。\n\n附图说明\n\n[0018]图1是本发明实施例提供的直下式背光模组的结构示意图；\n\n[0019]图2是本发明实施例中的光源的结构示意图；\n\n[0020]图3是本发明实施例中的micro-LED芯片发出光线的示例性图示；\n\n[0021]图4是本发明一些优选的实施例中将光源划分为多个控光区的示例性图示；\n\n[0022]图5是本发明实施例提供的液晶显示器的结构示意图。\n\n具体实施方式\n\n[0023]为使本发明的目的、技术方案和优点更加清楚，下面结合附图对本发明的具体实施方式进行详细说明。这些优选实施方式的示例在附图中进行了例示。附图中所示和根据附图描述的本发明的实施方式仅仅是示例性的，并且本发明并不限于这些实施方式。\n\n[0024]在此，还需要说明的是，为了避免因不必要的细节而模糊了本发明，在附图中仅仅示出了与根据本发明的方案密切相关的结构和/或处理步骤，而省略了与本发明关系不大的其他细节。\n\n[0025]本实施例首先提供了一种直下式背光模组，如图1和图2所示，所述直下式背光模组包括背板1以及设置在所述背板1上的光源2。其中，所述光源2包括印刷电路板21以及电性连接在所述印刷电路板21上的多个micro-LED(微型发光二极管)芯片22，所述多个micro-LED芯片22在所述印刷电路板21上呈矩阵阵列排布，任意相邻的两个micro-LED芯片22之间设置有遮光单元23。进一步地，如图1所示，所述印刷电路板21上还连接有背光驱动芯片3，所述背光驱动芯片3独立地驱动每一个所述micro-LED芯片22的开启和关闭。\n\n[0026]在本实施例中，所述micro-LED芯片22为发出单色蓝光的micro-LED芯片。如图1所示，所述直下式背光模组还包括量子点薄膜层4，所述量子点薄膜层4设置在所述光源2的上方，所述量子点薄膜层4在所述micro-LED芯片22发出的蓝光的激发下发出红光和绿光，被激发的红光和绿光与micro-LED芯片22发出的蓝光混合形成白光的背光，作为显示光源。\n\n[0027]如图3所示，所述遮光单元23可以限制micro-LED芯片22的出光角度，使得所述micro-LED芯片22发出的光束22a近似为准直光束传输到量子点薄膜层4上，由此，在进行局部调光(local dimming)的分区驱动时，分区之间的光线可以有效地相互间隔，减小了背光分区之间光线的串扰。\n\n[0028]具体地，为了达到较好地限制出光角度，所述遮光单元23从所述印刷电路板21上凸起的高度设置为不小于所述micro-LED芯片22从所述印刷电路板21上凸起的高度，最好是所述遮光单元23的高度略大于所述micro-LED芯片22的高度。\n\n[0029]具体地，所述遮光单元23的材料可以选择为遮光胶或者是遮光油墨，所述遮光单元23可以是通过丝网印刷或涂布印刷的工艺制备形成。在一些具体的实施例中，应用于小尺寸的液晶显示器的背光模组，任意相邻的两个micro-LED芯片22之间的间距为0.15～0.25mm，在阵列排布的micro-LED芯片22上方设置掩膜版，然后通过丝网印刷或涂布印刷的工艺，在任意相邻的两个micro-LED芯片22之间的间隙部分制备获得遮光单元23。\n\n[0030]具体地，参阅图1，所述量子点薄膜层的厚度优选为80～100μm，所述量子点薄膜层4与所述光源2之间具有间隙5，所述间隙5的高度可以设置为0.3～0.5mm。其中，所述量子点薄膜层4包括透明的封装材料和分散在所述封装材料中的量子点材料。量子点(QuantumDots，QDs)，又可以称纳米晶，是一种由II-VI族或III-V族元素组成的纳米颗粒，量子点的粒径一般介于1～20nm之间，由于电子和空穴被量子限域，连续的能带结构变成具有分子特性的分立能级结构，其可以在光致的条件下受激后可以发射荧光，例如在蓝光的激发下可以发射出红光和绿光。量子点的发光具有良好的荧光强度和稳定性，量子点的发射光谱可以通过改变量子点的尺寸大小来控制。\n\n[0031]进一步地，在本实施例中，如图1所示，所述背板1上设置有散热板6，所述光源2中的印刷电路板21设置在所述散热板6上，由此可以更好地对印刷电路板21的micro-LED芯片22进行散热。在另外的一些实施例中，所述直下式背光模组还可以包括扩散片，所述扩散片设置在所述量子点薄膜层4上方，用于使得背光模组发射出的光线更加均匀。\n\n[0032]本实施例中，如前所述，所述背光驱动芯片3可以独立地驱动每一个所述micro-LED芯片22的开启和关闭，因此，在进行局部调光的分区驱动时，可以是一个micro-LED芯片22对应一个分区。为了降低驱动的难度，在另外的一些实施例中，如图4所示，所述多个micro-LED芯片22在所述印刷电路板21上被划分为多个控光区7，每一所述控光区7包括若干个所述micro-LED芯片22，在同一个控光区7中的所有micro-LED芯片22，由背光驱动芯片3统一控制其开启或关闭及其亮度的调整。\n\n[0033]本实施例还提供了一种液晶显示器，如图5所示，所述液晶显示器包括液晶面板100及背光模组200，所述背光模组200采用的是本发明实施例所提供的直下式背光模组。所述液晶面板100与所述背光模组200相对设置，所述背光模组200提供显示光源给所述液晶面板100，以使所述液晶面板100显示影像。其中，所述液晶面板100包括依次设置在所述背光模组200上的下偏光片101、阵列基板102、滤光基板103和上偏光片104，所述阵列基板102和所述滤光基板103之间设置有液晶层(图中未示出)。\n\n[0034]综上所述，本发明实施例提供的直下式背光模组，其中的光源包括呈矩阵阵列排布在印刷电路板上的多个micro-LED芯片，任意相邻的两个micro-LED芯片之间设置有遮光单元，遮光单元可以限制micro-LED芯片的出光角度。由此，在进行局部调光的分区驱动时，分区之间的光线可以有效地相互间隔，减小了背光分区之间光线的串扰，提升了显示器的HDR效果。所述直下式背光模组应用于小尺寸的液晶显示器时，其提升显示器的HDR效果尤为明显。\n\n[0035]需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。\n\n[0036]以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。', '技术领域\n\n[0001]本发明涉及显示器技术领域,尤其涉及一种直下式背光模组，还涉及包含所述直下式背光模组的液晶显示器。\n\n背景技术\n\n[0002]液晶显示器(Liquid Crystal Display，LCD)，为平面超薄的显示设备，它由一定数量的彩色或黑白像素组成，放置于光源或者反射面前方。液晶显示器功耗很低，并且具有高画质、体积小、重量轻的特点，因此倍受大家青睐，成为显示器的主流。现有市场上的液晶显示器大部分为背光型液晶显示器，包括液晶面板及背光模组，液晶面板与背光模组相对设置，背光模组提供显示光源给液晶面板，以使液晶面板显示影像。\n\n[0003]近年来，随着高动态范围(High-Dynamic Range，HDR)技术越来越多的应用于数字摄影、电影艺术、电视机等领域。要在液晶显示器中实现HDR技术，对液晶显示器提出了特殊的技术需求，液晶显示器应能够实现分区块控制。液晶显示器的分区越多，local dimming(局部调光)的效果越好，动态对比度越高，画质更佳。而在液晶显示器上引入localdimming技术，通常都会对液晶显示器的背光进行分区处理，几颗灯一区或者一颗灯一区，主板实时根据图像信号的亮度算法对每个区域进行亮度分析，根据分析结果控制背光驱动芯片驱动背光中的每一区，从而达到对背光进行实时亮度调节的目的，表现为亮的区域更亮、暗的地方更暗，从而提高动态对比度并实现节能。\n\n[0004]背光模组主要包括直下式背光模组以及侧入式背光模组，直下式背光模组由于LED的分区与液晶玻璃的分区可以一一对应，局部调光的效果好，因此成为市场主流，特别是对于大尺寸的液晶显示器，由于背光的面积较大，LED灯的间距较大，各个分区之间的背光串扰很小，HDR效果也较好。但是对于小尺寸的液晶显示器，背光中LED灯的间距小，无法做到有效的多分区，而且分区之间光线的串扰较大，其HDR效果较差。\n\n发明内容\n\n[0005]鉴于现有技术存在的不足，本发明提供了一种直下式背光模组，所述直下式背光模组可以有效地减小背光分区之间光线的串扰，提升HDR效果。\n\n[0006]为了达到上述的目的，本发明采用了如下的技术方案：\n\n[0007]一种直下式背光模组，包括背板以及设置在所述背板上的光源，其中，所述光源包括印刷电路板以及电性连接在所述印刷电路板上的多个micro-LED芯片，所述多个micro-LED芯片在所述印刷电路板上呈矩阵阵列排布，任意相邻的两个micro-LED芯片之间设置有遮光单元；所述印刷电路板上还连接有背光驱动芯片，所述背光驱动芯片独立地驱动每一个所述micro-LED芯片。\n\n[0008]其中，所述micro-LED芯片为发出单色蓝光的micro-LED芯片，所述直下式背光模组还包括量子点薄膜层，所述量子点薄膜层设置在所述光源的上方，所述量子点薄膜层在所述micro-LED芯片发出的蓝光的激发下发出红光和绿光。\n\n[0009]其中，所述量子点薄膜层与所述光源之间具有间隙，所述间隙的高度为0.3～0.5mm。\n\n[0010]其中，所述量子点薄膜层的厚度为80～100μm。\n\n[0011]其中，所述遮光单元从所述印刷电路板上凸起的高度不小于所述micro-LED芯片从所述印刷电路板上凸起的高度。\n\n[0012]其中，所述遮光单元的材料为遮光胶或者是遮光油墨。\n\n[0013]其中，任意相邻的两个micro-LED芯片之间的间距为0.15～0.25mm。\n\n[0014]其中，所述背板上设置有散热板，所述印刷电路板设置在所述散热板上。\n\n[0015]其中，所述多个micro-LED芯片在所述印刷电路板上被划分为多个控光区，每一所述控光区包括若干个所述micro-LED芯片。\n\n[0016]本发明的另一方面是提供一种液晶显示器，包括液晶面板及背光模组，液晶面板与背光模组相对设置，背光模组提供显示光源给液晶面板，以使液晶面板显示影像，其中，所述背光模组为前述的直下式背光模组。\n\n[0017]本发明实施例提供的直下式背光模组，其中的光源包括呈矩阵阵列排布在印刷电路板上的多个micro-LED芯片，任意相邻的两个micro-LED芯片之间设置有遮光单元，遮光单元可以限制micro-LED芯片的出光角度。由此，在进行局部调光的分区驱动时，分区之间的光线可以有效地相互间隔，减小了背光分区之间光线的串扰，提升了显示器的HDR效果。所述直下式背光模组应用于小尺寸的液晶显示器时，其提升显示器的HDR效果尤为明显。\n\n附图说明\n\n[0018]图1是本发明实施例提供的直下式背光模组的结构示意图；\n\n[0019]图2是本发明实施例中的光源的结构示意图；\n\n[0020]图3是本发明实施例中的micro-LED芯片发出光线的示例性图示；\n\n[0021]图4是本发明一些优选的实施例中将光源划分为多个控光区的示例性图示；\n\n[0022]图5是本发明实施例提供的液晶显示器的结构示意图。\n\n具体实施方式\n\n[0023]为使本发明的目的、技术方案和优点更加清楚，下面结合附图对本发明的具体实施方式进行详细说明。这些优选实施方式的示例在附图中进行了例示。附图中所示和根据附图描述的本发明的实施方式仅仅是示例性的，并且本发明并不限于这些实施方式。\n\n[0024]在此，还需要说明的是，为了避免因不必要的细节而模糊了本发明，在附图中仅仅示出了与根据本发明的方案密切相关的结构和/或处理步骤，而省略了与本发明关系不大的其他细节。\n\n[0025]本实施例首先提供了一种直下式背光模组，如图1和图2所示，所述直下式背光模组包括背板1以及设置在所述背板1上的光源2。其中，所述光源2包括印刷电路板21以及电性连接在所述印刷电路板21上的多个micro-LED(微型发光二极管)芯片22，所述多个micro-LED芯片22在所述印刷电路板21上呈矩阵阵列排布，任意相邻的两个micro-LED芯片22之间设置有遮光单元23。进一步地，如图1所示，所述印刷电路板21上还连接有背光驱动芯片3，所述背光驱动芯片3独立地驱动每一个所述micro-LED芯片22的开启和关闭。\n\n[0026]在本实施例中，所述micro-LED芯片22为发出单色蓝光的micro-LED芯片。如图1所示，所述直下式背光模组还包括量子点薄膜层4，所述量子点薄膜层4设置在所述光源2的上方，所述量子点薄膜层4在所述micro-LED芯片22发出的蓝光的激发下发出红光和绿光，被激发的红光和绿光与micro-LED芯片22发出的蓝光混合形成白光的背光，作为显示光源。\n\n[0027]如图3所示，所述遮光单元23可以限制micro-LED芯片22的出光角度，使得所述micro-LED芯片22发出的光束22a近似为准直光束传输到量子点薄膜层4上，由此，在进行局部调光(local dimming)的分区驱动时，分区之间的光线可以有效地相互间隔，减小了背光分区之间光线的串扰。\n\n[0028]具体地，为了达到较好地限制出光角度，所述遮光单元23从所述印刷电路板21上凸起的高度设置为不小于所述micro-LED芯片22从所述印刷电路板21上凸起的高度，最好是所述遮光单元23的高度略大于所述micro-LED芯片22的高度。\n\n[0029]具体地，所述遮光单元23的材料可以选择为遮光胶或者是遮光油墨，所述遮光单元23可以是通过丝网印刷或涂布印刷的工艺制备形成。在一些具体的实施例中，应用于小尺寸的液晶显示器的背光模组，任意相邻的两个micro-LED芯片22之间的间距为0.15～0.25mm，在阵列排布的micro-LED芯片22上方设置掩膜版，然后通过丝网印刷或涂布印刷的工艺，在任意相邻的两个micro-LED芯片22之间的间隙部分制备获得遮光单元23。\n\n[0030]具体地，参阅图1，所述量子点薄膜层的厚度优选为80～100μm，所述量子点薄膜层4与所述光源2之间具有间隙5，所述间隙5的高度可以设置为0.3～0.5mm。其中，所述量子点薄膜层4包括透明的封装材料和分散在所述封装材料中的量子点材料。量子点(QuantumDots，QDs)，又可以称纳米晶，是一种由II-VI族或III-V族元素组成的纳米颗粒，量子点的粒径一般介于1～20nm之间，由于电子和空穴被量子限域，连续的能带结构变成具有分子特性的分立能级结构，其可以在光致的条件下受激后可以发射荧光，例如在蓝光的激发下可以发射出红光和绿光。量子点的发光具有良好的荧光强度和稳定性，量子点的发射光谱可以通过改变量子点的尺寸大小来控制。\n\n[0031]进一步地，在本实施例中，如图1所示，所述背板1上设置有散热板6，所述光源2中的印刷电路板21设置在所述散热板6上，由此可以更好地对印刷电路板21的micro-LED芯片22进行散热。在另外的一些实施例中，所述直下式背光模组还可以包括扩散片，所述扩散片设置在所述量子点薄膜层4上方，用于使得背光模组发射出的光线更加均匀。\n\n[0032]本实施例中，如前所述，所述背光驱动芯片3可以独立地驱动每一个所述micro-LED芯片22的开启和关闭，因此，在进行局部调光的分区驱动时，可以是一个micro-LED芯片22对应一个分区。为了降低驱动的难度，在另外的一些实施例中，如图4所示，所述多个micro-LED芯片22在所述印刷电路板21上被划分为多个控光区7，每一所述控光区7包括若干个所述micro-LED芯片22，在同一个控光区7中的所有micro-LED芯片22，由背光驱动芯片3统一控制其开启或关闭及其亮度的调整。\n\n[0033]本实施例还提供了一种液晶显示器，如图5所示，所述液晶显示器包括液晶面板100及背光模组200，所述背光模组200采用的是本发明实施例所提供的直下式背光模组。所述液晶面板100与所述背光模组200相对设置，所述背光模组200提供显示光源给所述液晶面板100，以使所述液晶面板100显示影像。其中，所述液晶面板100包括依次设置在所述背光模组200上的下偏光片101、阵列基板102、滤光基板103和上偏光片104，所述阵列基板102和所述滤光基板103之间设置有液晶层(图中未示出)。\n\n[0034]综上所述，本发明实施例提供的直下式背光模组，其中的光源包括呈矩阵阵列排布在印刷电路板上的多个micro-LED芯片，任意相邻的两个micro-LED芯片之间设置有遮光单元，遮光单元可以限制micro-LED芯片的出光角度。由此，在进行局部调光的分区驱动时，分区之间的光线可以有效地相互间隔，减小了背光分区之间光线的串扰，提升了显示器的HDR效果。所述直下式背光模组应用于小尺寸的液晶显示器时，其提升显示器的HDR效果尤为明显。\n\n[0035]需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。\n\n[0036]以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10603, 23657, '技术领域\n\n[0001]本发明涉及面板显示技术领域，特别是涉及一种微型LED显示面板。\n\n背景技术\n\n[0002]随着显示技术的快速发展，微型LED显示面板逐渐进入人们的生活。微型LED显示面板是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器。\n\n[0003]目前，微型LED显示技术主要包括以下两种方式：RGB三色微型LED灯的方式和蓝光微型LED灯与荧光转换层的组合方式。\n\n[0004]本申请的发明人在长期的研发过程中，发现蓝光微型LED灯与荧光转换层的组合方式中，荧光转换层的材料通常选用氮化物、硅酸盐、氟化物、硫化物、铝酸盐等荧光粉，而荧光粉的尺寸处于微米级别，即尺寸较大，容易造成颜色分布不均的问题；另外，红色像素或绿色像素中也会有部分蓝光残留。在这种情况下，即使采用红色或绿色彩色滤光片，也会有部分蓝光残留，而且增加彩色滤光片的使用，不仅会损失光能，还会增加显示器的功耗。\n\n发明内容\n\n[0005]本发明主要解决的技术问题是提供一种微型LED显示面板，能够提高光能利用率、增强光的亮度，从而呈现较佳的色彩效果。\n\n[0006]为解决上述技术问题，本发明采用的一个技术方案是：提供一种微型LED显示面板，所述显示面板包括：\n\n[0007]微型LED阵列模块层，包括多个间隔设置的微型LED灯，所述多个间隔设置的微型LED灯在通电的情况下，发出小于等于480纳米波长的第一光线；\n\n[0008]光转换层，设置在所述微型LED阵列模块层的上端，包括红光量子点发光介质、绿光量子点发光介质以及蓝光量子点发光介质，所述红光量子点发光介质、绿光量子点发光介质以及蓝光量子点发光介质依次循环设置，每个所述红光量子点发光介质、每个所述绿光量子点发光介质以及每个所述蓝光量子点发光介质分别间隔对应设置在每个所述微型LED灯的上端；所述光转换层用于吸收所述微型LED阵列模块层发出的所述第一光线，并在所述第一光线的激发下激发出红绿蓝三色的第二光线。\n\n[0009]本发明的有益效果是：区别于现有技术的情况，本发明的显示面板包括：微型LED阵列模块层，包括多个间隔设置的微型LED灯，多个间隔设置的微型LED灯在通电的情况下，发出小于等于480纳米波长的第一光线；光转换层，设置在微型LED阵列模块层的上端，包括红光量子点发光介质、绿光量子点发光介质以及蓝光量子点发光介质，红光量子点发光介质、绿光量子点发光介质以及蓝光量子点发光介质依次循环设置，每个红光量子点发光介质、每个绿光量子点发光介质以及每个蓝光量子点发光介质分别间隔对应设置在每个微型LED灯的上端；光转换层用于吸收微型LED阵列模块层发出的第一光线，并在第一光线的激发下激发出红绿蓝三色的第二光线。光转换层中的量子点发光介质在胶水中可以混合均匀，不易沉降，从而可以呈现较佳的色彩效果；而且，量子点发光介质对于短波光的激发效率较佳，使得光转换效率高，从而有效提高光的利用率；另外，量子点发光介质的发射光谱半波宽很窄，温度稳定性好。\n\n附图说明\n\n[0010]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。其中：\n\n[0011]图1是本发明微型LED显示面板一实施方式的结构示意图；\n\n[0012]图2是本发明微型LED显示面板中第一反射层一实施方式的结构示意图；\n\n[0013]图3是本发明一实施方式中的光线以0°的入射角照射到第一反射层时的反射频谱图；\n\n[0014]图4是本发明一实施方式中的光线以30°的入射角照射到第一反射层时的反射频谱图；\n\n[0015]图5是本发明一实施方式中的光线以60°的入射角照射到第一反射层时的反射频谱图。\n\n具体实施方式\n\n[0016]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性的劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0017]参阅图1，图1是本发明微型LED显示面板100的一实施方式的结构示意图。显示面板100包括微型LED阵列模块层10、光转换层20、第一反射层30、第二反射层40、第一基板50、第二基板60以及薄膜晶体管70。\n\n[0018]其中，微型LED阵列模块层10包括多个间隔设置的微型LED灯，多个间隔设置的微型LED灯在通电的情况下，发出小于等于480纳米波长的第一光线。\n\n[0019]本实施方式中，微型LED灯为紫外微型LED灯或短波蓝光微型LED灯，第一光线为紫外光或短波蓝光。在其他实施方式中，微型LED灯可为其它的LED灯。\n\n[0020]光转换层20设置在微型LED阵列模块层10的上端，包括红光量子点发光介质21、绿光量子点发光介质22以及蓝光量子点发光介质23，红光量子点发光介质21、绿光量子点发光介质22以及蓝光量子点发光介质23依次循环设置，每个红光量子点发光介质21、每个绿光量子点发光介质22以及每个蓝光量子点发光介质23分别间隔对应设置在每个微型LED灯的上端；光转换层20用于吸收微型LED阵列模块层10发出的第一光线，并在第一光线的激发下激发出红绿蓝三色的第二光线。\n\n[0021]可以理解，量子点发光介质是指三维尺寸均在纳米量级的颗粒材料，量子点发光介质在收到光照射时可以进入激发态，并在由激发态回落为基态时发出特定波长(即特定颜色)的光，量子点发光介质的发光光谱主要由量子点发光介质的粒径大小来控制，因此可以通过改变量子点发光介质的粒径来实现发光光谱的调节；因量子点发光介质的光转换效率很高，可以有效提高光的利用率，而且量子点发光介质的发射光谱半波宽很窄，温度稳定性好。\n\n[0022]可以理解，第一光线经红光量子点发光介质21吸收并激发后出射红光，经绿光量子点发光介质22吸收并激发后出射绿光，经蓝光量子点发光介质23吸收并激发后出射蓝光。\n\n[0023]本实施方式中，光转换层20的厚度范围为1-100um，例如25um、50um、75um等。红光量子点发光介质21、绿光量子点发光介质22以及蓝光量子点发光介质23的粒径范围为2-20nm，例如5nm、10nm、15nm等。在其它实施方式中，光转换层20的厚度以及量子点发光介质的粒径可以根据需求进行适应性调整。\n\n[0024]红光量子点发光介质21、绿光量子点发光介质22以及蓝光量子点发光介质23的材料选自为CuInS2、InP、CdSe/CdS、CdSe/ZnS、CdSe/ZnSe、CH3PbX3(X＝Cl，Br，I),CSPbX3(X＝Cl，Br，I)中的至少一种。可以理解，当红光量子点发光介质21、绿光量子点发光介质22以及蓝光量子点发光介质23的材料为CdSe/CdS、CdSe/ZnS、CdSe/ZnSe时，即表示量子点发光介质的核为CdSe材料，壳为CdS、ZnS或ZnSe材料。\n\n[0025]第一反射层30设置在光转换层20的上端，用于将未被光转换层20吸收的第一光线反射回光转换层20，以再次激发出第二光线，而使可见光透过第一反射层30。\n\n[0026]可以理解，可见光中至少包括红、绿、蓝三色光。\n\n[0027]请参阅图2，第一反射层30为具有第一折射率的第一膜层31和具有第二折射率的第二膜层32分别交叠而构成的多层反射膜，其中，第一折射率大于第二折射率。\n\n[0028]其中，多层反射膜的结构包括依次排列的a个第一周期结构和b个第二周期结构，第一周期结构包括依次排列的第一膜层31、第二膜层32和第一膜层31，第一周期结构中第一膜层31的物理厚度为x倍的H，第二膜层32的物理厚度为L，第二周期结构包括依次排列的第一膜层31、第二膜层32和第一膜层31，第二周期结构中第一膜层31的物理厚度为y倍的H，第二膜层32的物理厚度为L。\n\n[0029]其中，H表示第三光线在第一膜层31中行进1/4波长时，所对应的第一膜层31的物理厚度，L表示第三光线在第二膜层32中行进1/4波长时，所对应的第二膜层32的物理厚度。\n\n[0030]第三光线的波长为550nm，a和b的取值范围为5-40，进一步的，a和b的取值范围为15-20，例如17、18等，x和y分别表示物理厚度的系数，x和y取值范围均为0.01-2，例如0.5、1.0、1.5等。\n\n[0031]可以理解，a和b的取值可以相等或不相等，x和y的取值可以相等或不相等。\n\n[0032]可以理解，在其它实施方式中，第三光线的波长可为其它波长。\n\n[0033]可以理解，通过将第一反射层30的不同折射率的第一膜层31和第二膜层32交替沉积，使得第一反射层30具有较大的带宽，且设置为依次排列的两个不同的周期结构，可进一步拓展第一反射膜层30的反射带宽，如此，既能保证第一反射层30对于紫外或短波蓝光具有较佳的反射率，又可保证红绿蓝三色光线具有较佳的透射率。从而第一反射层30能将第二光线透射出去，还能将未被光转换层20吸收的第一光线反射回至光转换层20，再次进行激发，可以有效提高光转换层20的激发效率以及光能利用率，增强光的亮度，降低量子点发光介质的用量。另外，因第一反射层30将紫外光或短波蓝光反射回光转换层20，能有效避免紫外光和短波蓝光等短波光线透射出去，从而避免对人眼造成危害。\n\n[0034]在一具体实施方式中，请参阅图3，图3为本发明一实施方式中的光线以0°的入射角照射到第一反射层30时的反射频谱图。第一反射层30中的第一膜层31为聚萘二甲酸乙二醇酯，第二膜层32为聚甲基丙烯酸甲酯，a取值为20，b取值为20，x取值为0.24，y取值为0.32，以紫外微型LED灯发射360nm的紫外光作为第一光线。由图3可知，第一反射层30对波长范围为355nm-435nm的紫外光和短波蓝光具有很好的反射效果，光的反射率达到95％以上；对波长大于445nm的可见光具有很高的透光效果，光的透过率达到95％以上。\n\n[0035]请结合参阅图4和图5，图4为本发明一实施方式中的光线以30°的入射角照射到第一反射层30时的反射频谱图；图5为本发明一实施方式中的光线以60°的入射角照射到第一反射层30时的反射频谱图。由图4及图5可知，第一反射层30对360nm的紫外光依然具有很好的反射效果，且对红绿蓝三色光线具有很好的透光效果。\n\n[0036]第二反射层40间隔对应设置在每个微型LED灯的下端，用于反射所有光线。\n\n[0037]其中，第二反射层40为金属材料制成。\n\n[0038]进一步的，第二反射层40为银或铝制成，第二反射层40的厚度大于100nm，能够使得第二反射层40的反射率达到一个稳定的状态。\n\n[0039]可以理解，第二反射层40将第一光线反射回光转换层20进行再次激发，或/和将第二光线反射至第一反射层30，从而透射出去，如此，进一步有效提高光转换层20的激发效率以及光能利用率，增强光的亮度，降低量子点发光介质的用量。\n\n[0040]第一基板50设置在第一反射层30的上端。\n\n[0041]其中，第一基板50可以为玻璃基板。\n\n[0042]第二基板60设置在第二反射层40的下端，第二基板60上设置有多个分别与每个微型LED灯间隔对应设置的薄膜晶体管70，每个薄膜晶体管70用于控制对应的每个微型LED灯的开关。\n\n[0043]薄膜晶体管70以铟镓锌氧化物、低温多晶硅或单晶硅作为有源层。\n\n[0044]可以理解，光转换层20设置于第一基板50与第二基板60之间，可以有效避免水或氧气等侵入，从而提高光转换层20的使用效率。\n\n[0045]本发明的有益效果是：区别于现有技术的情况，本发明的显示面板100包括：微型LED阵列模块层10，包括多个间隔设置的微型LED灯，多个间隔设置的微型LED灯在通电的情况下，发出小于等于480纳米波长的第一光线；光转换层20，设置在微型LED阵列模块层10的上端，包括红光量子点发光介质21、绿光量子点发光介质22以及蓝光量子点发光介质23，红光量子点发光介质21、绿光量子点发光介质22以及蓝光量子点发光介质23依次循环设置，每个红光量子点发光介质21、每个绿光量子点发光介质22以及每个蓝光量子点发光介质23分别间隔对应设置在每个微型LED灯的上端；光转换层20用于吸收微型LED阵列模块层10发出的第一光线，并在第一光线的激发下激发出红绿蓝三色的第二光线。光转换层20中的量子点发光介质在胶水中可以混合均匀，不易沉降，从而可以呈现较佳的色彩效果；而且，量子点发光介质对于短波光的激发效率较佳，使得光转换效率高，从而有效提高光的利用率；另外，量子点发光介质的发射光谱半波宽很窄，温度稳定性好。\n\n[0046]以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。', '技术领域\n\n[0001]本发明涉及面板显示技术领域，特别是涉及一种微型LED显示面板。\n\n背景技术\n\n[0002]随着显示技术的快速发展，微型LED显示面板逐渐进入人们的生活。微型LED显示面板是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器。\n\n[0003]目前，微型LED显示技术主要包括以下两种方式：RGB三色微型LED灯的方式和蓝光微型LED灯与荧光转换层的组合方式。\n\n[0004]本申请的发明人在长期的研发过程中，发现蓝光微型LED灯与荧光转换层的组合方式中，荧光转换层的材料通常选用氮化物、硅酸盐、氟化物、硫化物、铝酸盐等荧光粉，而荧光粉的尺寸处于微米级别，即尺寸较大，容易造成颜色分布不均的问题；另外，红色像素或绿色像素中也会有部分蓝光残留。在这种情况下，即使采用红色或绿色彩色滤光片，也会有部分蓝光残留，而且增加彩色滤光片的使用，不仅会损失光能，还会增加显示器的功耗。\n\n发明内容\n\n[0005]本发明主要解决的技术问题是提供一种微型LED显示面板，能够提高光能利用率、增强光的亮度，从而呈现较佳的色彩效果。\n\n[0006]为解决上述技术问题，本发明采用的一个技术方案是：提供一种微型LED显示面板，所述显示面板包括：\n\n[0007]微型LED阵列模块层，包括多个间隔设置的微型LED灯，所述多个间隔设置的微型LED灯在通电的情况下，发出小于等于480纳米波长的第一光线；\n\n[0008]光转换层，设置在所述微型LED阵列模块层的上端，包括红光量子点发光介质、绿光量子点发光介质以及蓝光量子点发光介质，所述红光量子点发光介质、绿光量子点发光介质以及蓝光量子点发光介质依次循环设置，每个所述红光量子点发光介质、每个所述绿光量子点发光介质以及每个所述蓝光量子点发光介质分别间隔对应设置在每个所述微型LED灯的上端；所述光转换层用于吸收所述微型LED阵列模块层发出的所述第一光线，并在所述第一光线的激发下激发出红绿蓝三色的第二光线。\n\n[0009]本发明的有益效果是：区别于现有技术的情况，本发明的显示面板包括：微型LED阵列模块层，包括多个间隔设置的微型LED灯，多个间隔设置的微型LED灯在通电的情况下，发出小于等于480纳米波长的第一光线；光转换层，设置在微型LED阵列模块层的上端，包括红光量子点发光介质、绿光量子点发光介质以及蓝光量子点发光介质，红光量子点发光介质、绿光量子点发光介质以及蓝光量子点发光介质依次循环设置，每个红光量子点发光介质、每个绿光量子点发光介质以及每个蓝光量子点发光介质分别间隔对应设置在每个微型LED灯的上端；光转换层用于吸收微型LED阵列模块层发出的第一光线，并在第一光线的激发下激发出红绿蓝三色的第二光线。光转换层中的量子点发光介质在胶水中可以混合均匀，不易沉降，从而可以呈现较佳的色彩效果；而且，量子点发光介质对于短波光的激发效率较佳，使得光转换效率高，从而有效提高光的利用率；另外，量子点发光介质的发射光谱半波宽很窄，温度稳定性好。\n\n附图说明\n\n[0010]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。其中：\n\n[0011]图1是本发明微型LED显示面板一实施方式的结构示意图；\n\n[0012]图2是本发明微型LED显示面板中第一反射层一实施方式的结构示意图；\n\n[0013]图3是本发明一实施方式中的光线以0°的入射角照射到第一反射层时的反射频谱图；\n\n[0014]图4是本发明一实施方式中的光线以30°的入射角照射到第一反射层时的反射频谱图；\n\n[0015]图5是本发明一实施方式中的光线以60°的入射角照射到第一反射层时的反射频谱图。\n\n具体实施方式\n\n[0016]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性的劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0017]参阅图1，图1是本发明微型LED显示面板100的一实施方式的结构示意图。显示面板100包括微型LED阵列模块层10、光转换层20、第一反射层30、第二反射层40、第一基板50、第二基板60以及薄膜晶体管70。\n\n[0018]其中，微型LED阵列模块层10包括多个间隔设置的微型LED灯，多个间隔设置的微型LED灯在通电的情况下，发出小于等于480纳米波长的第一光线。\n\n[0019]本实施方式中，微型LED灯为紫外微型LED灯或短波蓝光微型LED灯，第一光线为紫外光或短波蓝光。在其他实施方式中，微型LED灯可为其它的LED灯。\n\n[0020]光转换层20设置在微型LED阵列模块层10的上端，包括红光量子点发光介质21、绿光量子点发光介质22以及蓝光量子点发光介质23，红光量子点发光介质21、绿光量子点发光介质22以及蓝光量子点发光介质23依次循环设置，每个红光量子点发光介质21、每个绿光量子点发光介质22以及每个蓝光量子点发光介质23分别间隔对应设置在每个微型LED灯的上端；光转换层20用于吸收微型LED阵列模块层10发出的第一光线，并在第一光线的激发下激发出红绿蓝三色的第二光线。\n\n[0021]可以理解，量子点发光介质是指三维尺寸均在纳米量级的颗粒材料，量子点发光介质在收到光照射时可以进入激发态，并在由激发态回落为基态时发出特定波长(即特定颜色)的光，量子点发光介质的发光光谱主要由量子点发光介质的粒径大小来控制，因此可以通过改变量子点发光介质的粒径来实现发光光谱的调节；因量子点发光介质的光转换效率很高，可以有效提高光的利用率，而且量子点发光介质的发射光谱半波宽很窄，温度稳定性好。\n\n[0022]可以理解，第一光线经红光量子点发光介质21吸收并激发后出射红光，经绿光量子点发光介质22吸收并激发后出射绿光，经蓝光量子点发光介质23吸收并激发后出射蓝光。\n\n[0023]本实施方式中，光转换层20的厚度范围为1-100um，例如25um、50um、75um等。红光量子点发光介质21、绿光量子点发光介质22以及蓝光量子点发光介质23的粒径范围为2-20nm，例如5nm、10nm、15nm等。在其它实施方式中，光转换层20的厚度以及量子点发光介质的粒径可以根据需求进行适应性调整。\n\n[0024]红光量子点发光介质21、绿光量子点发光介质22以及蓝光量子点发光介质23的材料选自为CuInS2、InP、CdSe/CdS、CdSe/ZnS、CdSe/ZnSe、CH3PbX3(X＝Cl，Br，I),CSPbX3(X＝Cl，Br，I)中的至少一种。可以理解，当红光量子点发光介质21、绿光量子点发光介质22以及蓝光量子点发光介质23的材料为CdSe/CdS、CdSe/ZnS、CdSe/ZnSe时，即表示量子点发光介质的核为CdSe材料，壳为CdS、ZnS或ZnSe材料。\n\n[0025]第一反射层30设置在光转换层20的上端，用于将未被光转换层20吸收的第一光线反射回光转换层20，以再次激发出第二光线，而使可见光透过第一反射层30。\n\n[0026]可以理解，可见光中至少包括红、绿、蓝三色光。\n\n[0027]请参阅图2，第一反射层30为具有第一折射率的第一膜层31和具有第二折射率的第二膜层32分别交叠而构成的多层反射膜，其中，第一折射率大于第二折射率。\n\n[0028]其中，多层反射膜的结构包括依次排列的a个第一周期结构和b个第二周期结构，第一周期结构包括依次排列的第一膜层31、第二膜层32和第一膜层31，第一周期结构中第一膜层31的物理厚度为x倍的H，第二膜层32的物理厚度为L，第二周期结构包括依次排列的第一膜层31、第二膜层32和第一膜层31，第二周期结构中第一膜层31的物理厚度为y倍的H，第二膜层32的物理厚度为L。\n\n[0029]其中，H表示第三光线在第一膜层31中行进1/4波长时，所对应的第一膜层31的物理厚度，L表示第三光线在第二膜层32中行进1/4波长时，所对应的第二膜层32的物理厚度。\n\n[0030]第三光线的波长为550nm，a和b的取值范围为5-40，进一步的，a和b的取值范围为15-20，例如17、18等，x和y分别表示物理厚度的系数，x和y取值范围均为0.01-2，例如0.5、1.0、1.5等。\n\n[0031]可以理解，a和b的取值可以相等或不相等，x和y的取值可以相等或不相等。\n\n[0032]可以理解，在其它实施方式中，第三光线的波长可为其它波长。\n\n[0033]可以理解，通过将第一反射层30的不同折射率的第一膜层31和第二膜层32交替沉积，使得第一反射层30具有较大的带宽，且设置为依次排列的两个不同的周期结构，可进一步拓展第一反射膜层30的反射带宽，如此，既能保证第一反射层30对于紫外或短波蓝光具有较佳的反射率，又可保证红绿蓝三色光线具有较佳的透射率。从而第一反射层30能将第二光线透射出去，还能将未被光转换层20吸收的第一光线反射回至光转换层20，再次进行激发，可以有效提高光转换层20的激发效率以及光能利用率，增强光的亮度，降低量子点发光介质的用量。另外，因第一反射层30将紫外光或短波蓝光反射回光转换层20，能有效避免紫外光和短波蓝光等短波光线透射出去，从而避免对人眼造成危害。\n\n[0034]在一具体实施方式中，请参阅图3，图3为本发明一实施方式中的光线以0°的入射角照射到第一反射层30时的反射频谱图。第一反射层30中的第一膜层31为聚萘二甲酸乙二醇酯，第二膜层32为聚甲基丙烯酸甲酯，a取值为20，b取值为20，x取值为0.24，y取值为0.32，以紫外微型LED灯发射360nm的紫外光作为第一光线。由图3可知，第一反射层30对波长范围为355nm-435nm的紫外光和短波蓝光具有很好的反射效果，光的反射率达到95％以上；对波长大于445nm的可见光具有很高的透光效果，光的透过率达到95％以上。\n\n[0035]请结合参阅图4和图5，图4为本发明一实施方式中的光线以30°的入射角照射到第一反射层30时的反射频谱图；图5为本发明一实施方式中的光线以60°的入射角照射到第一反射层30时的反射频谱图。由图4及图5可知，第一反射层30对360nm的紫外光依然具有很好的反射效果，且对红绿蓝三色光线具有很好的透光效果。\n\n[0036]第二反射层40间隔对应设置在每个微型LED灯的下端，用于反射所有光线。\n\n[0037]其中，第二反射层40为金属材料制成。\n\n[0038]进一步的，第二反射层40为银或铝制成，第二反射层40的厚度大于100nm，能够使得第二反射层40的反射率达到一个稳定的状态。\n\n[0039]可以理解，第二反射层40将第一光线反射回光转换层20进行再次激发，或/和将第二光线反射至第一反射层30，从而透射出去，如此，进一步有效提高光转换层20的激发效率以及光能利用率，增强光的亮度，降低量子点发光介质的用量。\n\n[0040]第一基板50设置在第一反射层30的上端。\n\n[0041]其中，第一基板50可以为玻璃基板。\n\n[0042]第二基板60设置在第二反射层40的下端，第二基板60上设置有多个分别与每个微型LED灯间隔对应设置的薄膜晶体管70，每个薄膜晶体管70用于控制对应的每个微型LED灯的开关。\n\n[0043]薄膜晶体管70以铟镓锌氧化物、低温多晶硅或单晶硅作为有源层。\n\n[0044]可以理解，光转换层20设置于第一基板50与第二基板60之间，可以有效避免水或氧气等侵入，从而提高光转换层20的使用效率。\n\n[0045]本发明的有益效果是：区别于现有技术的情况，本发明的显示面板100包括：微型LED阵列模块层10，包括多个间隔设置的微型LED灯，多个间隔设置的微型LED灯在通电的情况下，发出小于等于480纳米波长的第一光线；光转换层20，设置在微型LED阵列模块层10的上端，包括红光量子点发光介质21、绿光量子点发光介质22以及蓝光量子点发光介质23，红光量子点发光介质21、绿光量子点发光介质22以及蓝光量子点发光介质23依次循环设置，每个红光量子点发光介质21、每个绿光量子点发光介质22以及每个蓝光量子点发光介质23分别间隔对应设置在每个微型LED灯的上端；光转换层20用于吸收微型LED阵列模块层10发出的第一光线，并在第一光线的激发下激发出红绿蓝三色的第二光线。光转换层20中的量子点发光介质在胶水中可以混合均匀，不易沉降，从而可以呈现较佳的色彩效果；而且，量子点发光介质对于短波光的激发效率较佳，使得光转换效率高，从而有效提高光的利用率；另外，量子点发光介质的发射光谱半波宽很窄，温度稳定性好。\n\n[0046]以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。');
INSERT INTO `os_patent_instruction_text` VALUES (10604, 23658, '技术领域\n\n[0001]本发明涉及Micro-LED领域，特别是涉及一种制作彩色Micro-LED的方法、显示模组及终端。\n\n背景技术\n\n[0002]LED具有自发光，尺寸小，重量轻，亮度高，更有着寿命更长，功耗更低，响应时间更快，及可控性更强的优点。Micro-LED是将LED结构设计进行薄膜化、微小化、阵列化制成，其尺寸仅在1-10um等级。Micro-LED显示模组是将Micro-LED批量转运至电路基板上，然后再制作保护层和电极，最后进行封装而成。\n\n[0003]Micro-LED一般为单色的，目前没有彩色的Micro-LED显示模组，如果要实现Micro-LED显示模组发彩色的光，则需要将不同颜色的Micro-LED批量、多次转运到电路基板上。然而，上述转运技术难度非常大，且精度上面更难以控制，产品良率非常差，无法量产。\n\n发明内容\n\n[0004]基于此，本发明提供一种制作彩色Micro-LED的方法、显示模组及终端，能够在不需要实施转运技术的情况下实现Micro-LED彩色发光。\n\n[0005]为解决上述技术问题，本发明采用的一个技术方案是：一种制作彩色Micro-LED的方法，该方法包括以下步骤：\n\n[0006]提供基板，所述基板一侧具有多个蓝光Micro-LED的阵列；\n\n[0007]使所述蓝光Micro-LED的阵列与第一颜色光敏溶液接触；\n\n[0008]点亮所述蓝光Micro-LED的阵列中的第一预设蓝光Micro-LED，使得所述第一预设蓝光Micro-LED上反应聚成透镜；\n\n[0009]使所述蓝光Micro-LED的阵列与第二颜色光敏溶液接触；\n\n[0010]点亮所述蓝光Micro-LED的阵列中第二预设蓝光Micro-LED，使得所述第二预设蓝光Micro-LED上反应聚成透镜。\n\n[0011]本发明通过将Micro-LED的阵列中蓝光Micro-LED先后与不同的颜色的光敏溶液接触，在接触第一颜色光敏溶液后，点亮第一预设蓝光Micro-LED，此时被点亮的第一预设蓝光Micro-LED200发蓝光，使其与第一颜色光敏溶液发生作用，反应聚成透镜，进而使得第一预设蓝光Micro-LED能够发出第一颜色的光。在接触第二颜色光敏溶液后，点亮第二预设蓝光Micro-LED，此时被点亮的第二预设蓝光Micro-LED发蓝光，使其与第二颜色光敏溶液发生作用，也使其反应聚成透镜，使得第二预设蓝光Micro-LED能够发出第二颜色的光。在此基础上，再与剩下的没有点亮，且没有与第一颜色或第二颜色溶液反应聚成透镜的蓝光Micro-LED，即发蓝光的部分蓝光Micro-LED构成三种颜色，进而实现Micro-LED发彩色的效果。\n\n[0012]本发明还提供一种显示模组，其包括以上方法所制得的Micro-LED阵列。\n\n[0013]本发明还提供一种终端，其包括以上所述的显示模组。\n\n[0014]本发明中的具有Micro-LED的阵列可以根据显示模组和终端的大小设置不同的规格，设置相应匹配数量的Micro-LED，实现发彩光的同时巧妙地避免了现有技术实现Micro-LED发彩色光需要批量转运的工序，进而大大提高产品的良率，保证产品的性能。\n\n附图说明\n\n[0015]图1是本发明制作彩色Micro-LED的方法的一实施方式的流程示意图；\n\n[0016]图2是本发明制作彩色Micro-LED的方法的一实施方式中基板分布有多个蓝光Micro-LED的结构意识图；\n\n[0017]图3是本发明制作彩色Micro-LED的方法的一实施方式中经过步骤S103之后Micro-LED阵列的结构示意图；\n\n[0018]图4是本发明制作彩色Micro-LED的方法的一实施方式中经过步骤S105之后Micro-LED阵列的结构示意图；\n\n[0019]图5本发明制作彩色Micro-LED的方法的另一实施方式的流程示意图；\n\n[0020]图6本发明显示模组一实施例的结构示意图；\n\n[0021]图7本发明终端一实施例的结构示意图。\n\n具体实施方式\n\n[0022]下面结合附图和实施方式对本发明进行详细说明。\n\n[0023]请参阅图1，为本发明制作彩色Micro-LED的方法的一实施例方式的流程示意图。该方法包括：\n\n[0024]S101：提供基板10，基板10一侧具有多个蓝光Micro-LED400的阵列20。\n\n[0025]以上基板10可以是以蓝宝石，或者矽，或者碳化矽三种材料的一种或者多种制成。结合图2，该基板10上分布有多个可发蓝光的Micro-LED400形成阵列20，基板上的蓝光Micro-LED400分类三类，分别为第一预设蓝光Micro-LED100、第二预设蓝光Micro-LED200，以及蓝光Micro-LED300。\n\n[0026]S102：使蓝光Micro-LED400的阵列20与第一颜色光敏溶液接触。\n\n[0027]使蓝光Micro-LED400的阵列20与第一颜色光敏溶液接触，具体的接触方式可以是蓝光Micro-LED400的阵列20浸入溶液，或者将溶液喷涂在蓝光Micro-LED400的阵列20上，或者是其他能使光敏溶液与蓝光Micro-LED400的阵列20接触的方式。\n\n[0028]S103：点亮蓝光Micro-LED400的阵列20中的第一预设蓝光Micro-LED100，使得第一预设蓝光Micro-LED100上反应聚成透镜。\n\n[0029]结合图3，使蓝光Micro-LED的阵列20中的第一预设蓝光Micro-LED100发亮，进而使第一预设蓝光Micro-LED100上反应聚成透镜。经过该步骤处理形成的第一预设蓝光Micro-LED100能够发第一颜色的光。具体的，在聚成透镜后，透镜上形成第一颜色的色素。更具体的，透镜形成过程为：当Micro-LED100发亮时，触发光敏溶液中的树脂成分发生聚合，在Micro-LED100表面形成光敏树脂核，然后随着基板10缓慢上升，光敏树脂核表面还会形成光敏树脂滴液，待光敏树脂核和光敏树脂滴液固化即形成透镜。\n\n[0030]S104：使蓝光Micro-LED400的阵列20与第二颜色光敏溶液接触。\n\n[0031]具体的该步骤中二者接触的方式与S102步骤中列举的一样，此不赘述。\n\n[0032]S105：点亮蓝光Micro-LED400的阵列20中第二预设蓝光Micro-LED200，使得第二预设蓝光Micro-LED200上反应聚成透镜。\n\n[0033]结合图4，使蓝光Micro-LED400的阵列20中的第二预设蓝光Micro-LED200发亮，进而使第二预设蓝光Micro-LED200上反应聚成透镜。经过该步骤处理形成的第二预设蓝光Micro-LED200能够发第二颜色的光。具体的，在聚成透镜后，透镜上形成第二颜色的色素。\n\n[0034]以上实施方式中Micro-LED的阵列20中蓝光Micro-LED400先后与不同的颜色的光敏溶液接触，在接触第一颜色光敏溶液后，点亮第一预设蓝光Micro-LED100，此时被点亮的第一预设蓝光Micro-LED100发蓝光，使其与第一颜色光敏溶液发生作用，反应聚成透镜，进而使得第一预设蓝光Micro-LED100能够发出第一颜色的光，同时第一预设蓝光Micro-LED100之外的其他Micro-LED不会与第一颜色光敏溶液反应。在接触第二颜色光敏溶液后，点亮第二预设蓝光Micro-LED200，此时被点亮的第二预设蓝光Micro-LED200发蓝光，使其与第二颜色光敏溶液发生作用，也使其反应聚成透镜，同时第二预设蓝光Micro-LED200之外的其他Micro-LED不会与第一颜色光敏溶液反应，使得第二预设蓝光Micro-LED200能够发出第二颜色的光。在此基础上，再与剩下的没有点亮，且没有与第一颜色或第二颜色溶液反应聚成透镜的蓝光Micro-LED300，即发蓝光的部分蓝光Micro-LED300构成三种颜色，进而实现Micro-LED发彩色的效果。\n\n[0035]可选地，第一颜色、第二颜色分别是红色、绿色，第一预设蓝光Micro-LED100上反应聚成透镜后，形成红色像素，第二预设蓝光Micro-LED200上反应聚成透镜后，形成绿色像素。此时三种颜色构成彩色的三原色，通过控制以上红、绿、蓝三种颜色的深浅即可制成各种彩色的Micro-LED。\n\n[0036]可以理解的，在其他实施例中，第一颜色也可以为绿色，第二颜色为红色，即第一预设蓝光Micro-LED100上反应聚成透镜后，形成绿色像素，第二预设蓝光Micro-LED200上反应聚成透镜后，形成红色像素。\n\n[0037]可选地，每一第一预设蓝光Micro-LED100周围均设有第二预设蓝光Micro-LED200及蓝光Micro-LED300。采用这样的分布，经过步骤S102、S103、S104和S105之后第一预设蓝光Micro-LED100可发红光(或绿光)，第二预设蓝光Micro-LED200可发绿光(或红光)，再结合发蓝光的蓝光Micro-LED300，即可定义一个红绿蓝三原色构成的像素。基板一侧具有多个以上所述的像素，进而实现整个基板的Micro-LED发彩色的效果。\n\n[0038]请参阅图5，为本发明制作彩色Micro-LED的方法的另一实施例方式的流程示意图。该方法包括：\n\n[0039]S201：提供基板10，基板10一侧具有多个蓝光Micro-LED400的阵列20。\n\n[0040]S202：将蓝光Micro-LED400的阵列20发光面朝下浸入第一颜色光敏树脂溶液中。\n\n[0041]蓝光Micro-LED400的阵列20发光面朝下浸入以基板10具有Micro-LED的一侧平齐即可，这样可以保护基板10另一侧的电路。可选地，蓝光Micro-LED400的阵列20发光面朝下浸入一部分也可以，只要能与光敏树脂溶液反应形成透镜即可。可以理解的，在其他实施例中，在电路密封性良好的情况下也可以是蓝光Micro-LED400的阵列20发光面朝上，将整个基板10浸入第一颜色光敏树脂溶液中。\n\n[0042]S203：通过一控制电路通入电流使第一预设蓝光Micro-LED100发光，使第一颜色的像素进行光反应在第一预设蓝色Micro-LED100上聚成透镜。\n\n[0043]该步骤中，只有第一预设蓝光Micro-LED100通电发光，第二预设蓝色Micro-LED200和其他剩余的蓝色Micro-LED300均没有通电。可以理解的，在其他实施例中，也可以通过其他方式点亮第一预设蓝光Micro-LED100，比如蓄电池或者太阳能等。可选地，该步骤中的电流小于30mA。\n\n[0044]S204：将蓝光Micro-LED400的阵列发光面朝下浸入第二颜色光敏树脂溶液中。此步骤的做法与步骤S202类似，此不赘述。\n\n[0045]S205：通过一控制电路通入电流使第二预设蓝光Micro-LED200发光，使第二颜色的像素进行光反应在第二预设蓝色Micro-LED200上聚成透镜。此步骤的做法与步骤S203类似，此不赘述。\n\n[0046]可以理解的，控制电路包括第一控制电路和第二控制电路，第一控制电路连接第一预设蓝色Micro-LED100，第二控制电路连接第二预设蓝色Micro-LED200。第一控制电路连接基板10一侧上的所有第一预设蓝色Micro-LED100，第二控制电路连接基板10一侧上的所有第二预设蓝色Micro-LED200。\n\n[0047]可选地，第一颜色光敏树脂溶液和第二颜色光敏树脂溶液均包括光敏树脂，还包括荧光粉和/或量子点颜料。进一步，光敏树脂包括光敏引发剂，还包括树脂单体、预聚物、助剂及用于树脂改性的纳米颗粒中的任意一种或几种的组合。\n\n[0048]优选地，由于量子点颜料具有很好的光稳定性，因此量子点颜料的荧光强度比其他荧光粉的发光强度均高，例如其比最常用的有机荧光材料“罗丹明6G”高20倍，它的稳定性是“罗丹明6G”的100倍以上。因此，较荧光粉而言采用量子点颜料制作的显示模组发光效率高，色彩饱和度更好。\n\n[0049]其次，由于量子点颜料具有宽的激发谱和窄的发射谱。使用同一激发光源可以激发几个电子，因此大大提高蓝光的转化效率。\n\n[0050]可选地，光敏引发剂重量含量小于等于5％。\n\n[0051]可选地，荧光粉和/或量子点颜料的含量为1％-1.5％。\n\n[0052]可选地，在其他实施例中，在步骤S203和/或S205之后还可以包括：通过控制电路通入电流使第一预设蓝光Micro-LED100和/或第二预设蓝光Micro-LED200再次发光，使得其上的光敏树脂核及光敏树脂滴液进一步固化形成透镜。具体的，步骤中的电流大于30mA。\n\n[0053]参见图6，本发明还提供一种显示模组30，其包括如以上任一实施方式中的方法所制得的具有Micro-LED400的阵列20。\n\n[0054]参见图7，本发明还提供一种终端40，其包括以上所描述的Micro-LED阵列的显示模组30。本发明提供的显示模组30和终端40中的Micro-LED发彩色光，大大提高了产品的优越性，丰富产品的性能，提高用户的体验感。而且，本发明中的具有Micro-LED400的阵列20可以根据显示模组30和终端40的大小设置不同的规格，设置相应匹配数量的Micro-LED，从而巧妙地避免了现有技术实现Micro-LED发彩色光需要批量转运的工序，进而大大提高产品的良率，保证产品的性能。\n\n[0055]以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。', '技术领域\n\n[0001]本发明涉及Micro-LED领域，特别是涉及一种制作彩色Micro-LED的方法、显示模组及终端。\n\n背景技术\n\n[0002]LED具有自发光，尺寸小，重量轻，亮度高，更有着寿命更长，功耗更低，响应时间更快，及可控性更强的优点。Micro-LED是将LED结构设计进行薄膜化、微小化、阵列化制成，其尺寸仅在1-10um等级。Micro-LED显示模组是将Micro-LED批量转运至电路基板上，然后再制作保护层和电极，最后进行封装而成。\n\n[0003]Micro-LED一般为单色的，目前没有彩色的Micro-LED显示模组，如果要实现Micro-LED显示模组发彩色的光，则需要将不同颜色的Micro-LED批量、多次转运到电路基板上。然而，上述转运技术难度非常大，且精度上面更难以控制，产品良率非常差，无法量产。\n\n发明内容\n\n[0004]基于此，本发明提供一种制作彩色Micro-LED的方法、显示模组及终端，能够在不需要实施转运技术的情况下实现Micro-LED彩色发光。\n\n[0005]为解决上述技术问题，本发明采用的一个技术方案是：一种制作彩色Micro-LED的方法，该方法包括以下步骤：\n\n[0006]提供基板，所述基板一侧具有多个蓝光Micro-LED的阵列；\n\n[0007]使所述蓝光Micro-LED的阵列与第一颜色光敏溶液接触；\n\n[0008]点亮所述蓝光Micro-LED的阵列中的第一预设蓝光Micro-LED，使得所述第一预设蓝光Micro-LED上反应聚成透镜；\n\n[0009]使所述蓝光Micro-LED的阵列与第二颜色光敏溶液接触；\n\n[0010]点亮所述蓝光Micro-LED的阵列中第二预设蓝光Micro-LED，使得所述第二预设蓝光Micro-LED上反应聚成透镜。\n\n[0011]本发明通过将Micro-LED的阵列中蓝光Micro-LED先后与不同的颜色的光敏溶液接触，在接触第一颜色光敏溶液后，点亮第一预设蓝光Micro-LED，此时被点亮的第一预设蓝光Micro-LED200发蓝光，使其与第一颜色光敏溶液发生作用，反应聚成透镜，进而使得第一预设蓝光Micro-LED能够发出第一颜色的光。在接触第二颜色光敏溶液后，点亮第二预设蓝光Micro-LED，此时被点亮的第二预设蓝光Micro-LED发蓝光，使其与第二颜色光敏溶液发生作用，也使其反应聚成透镜，使得第二预设蓝光Micro-LED能够发出第二颜色的光。在此基础上，再与剩下的没有点亮，且没有与第一颜色或第二颜色溶液反应聚成透镜的蓝光Micro-LED，即发蓝光的部分蓝光Micro-LED构成三种颜色，进而实现Micro-LED发彩色的效果。\n\n[0012]本发明还提供一种显示模组，其包括以上方法所制得的Micro-LED阵列。\n\n[0013]本发明还提供一种终端，其包括以上所述的显示模组。\n\n[0014]本发明中的具有Micro-LED的阵列可以根据显示模组和终端的大小设置不同的规格，设置相应匹配数量的Micro-LED，实现发彩光的同时巧妙地避免了现有技术实现Micro-LED发彩色光需要批量转运的工序，进而大大提高产品的良率，保证产品的性能。\n\n附图说明\n\n[0015]图1是本发明制作彩色Micro-LED的方法的一实施方式的流程示意图；\n\n[0016]图2是本发明制作彩色Micro-LED的方法的一实施方式中基板分布有多个蓝光Micro-LED的结构意识图；\n\n[0017]图3是本发明制作彩色Micro-LED的方法的一实施方式中经过步骤S103之后Micro-LED阵列的结构示意图；\n\n[0018]图4是本发明制作彩色Micro-LED的方法的一实施方式中经过步骤S105之后Micro-LED阵列的结构示意图；\n\n[0019]图5本发明制作彩色Micro-LED的方法的另一实施方式的流程示意图；\n\n[0020]图6本发明显示模组一实施例的结构示意图；\n\n[0021]图7本发明终端一实施例的结构示意图。\n\n具体实施方式\n\n[0022]下面结合附图和实施方式对本发明进行详细说明。\n\n[0023]请参阅图1，为本发明制作彩色Micro-LED的方法的一实施例方式的流程示意图。该方法包括：\n\n[0024]S101：提供基板10，基板10一侧具有多个蓝光Micro-LED400的阵列20。\n\n[0025]以上基板10可以是以蓝宝石，或者矽，或者碳化矽三种材料的一种或者多种制成。结合图2，该基板10上分布有多个可发蓝光的Micro-LED400形成阵列20，基板上的蓝光Micro-LED400分类三类，分别为第一预设蓝光Micro-LED100、第二预设蓝光Micro-LED200，以及蓝光Micro-LED300。\n\n[0026]S102：使蓝光Micro-LED400的阵列20与第一颜色光敏溶液接触。\n\n[0027]使蓝光Micro-LED400的阵列20与第一颜色光敏溶液接触，具体的接触方式可以是蓝光Micro-LED400的阵列20浸入溶液，或者将溶液喷涂在蓝光Micro-LED400的阵列20上，或者是其他能使光敏溶液与蓝光Micro-LED400的阵列20接触的方式。\n\n[0028]S103：点亮蓝光Micro-LED400的阵列20中的第一预设蓝光Micro-LED100，使得第一预设蓝光Micro-LED100上反应聚成透镜。\n\n[0029]结合图3，使蓝光Micro-LED的阵列20中的第一预设蓝光Micro-LED100发亮，进而使第一预设蓝光Micro-LED100上反应聚成透镜。经过该步骤处理形成的第一预设蓝光Micro-LED100能够发第一颜色的光。具体的，在聚成透镜后，透镜上形成第一颜色的色素。更具体的，透镜形成过程为：当Micro-LED100发亮时，触发光敏溶液中的树脂成分发生聚合，在Micro-LED100表面形成光敏树脂核，然后随着基板10缓慢上升，光敏树脂核表面还会形成光敏树脂滴液，待光敏树脂核和光敏树脂滴液固化即形成透镜。\n\n[0030]S104：使蓝光Micro-LED400的阵列20与第二颜色光敏溶液接触。\n\n[0031]具体的该步骤中二者接触的方式与S102步骤中列举的一样，此不赘述。\n\n[0032]S105：点亮蓝光Micro-LED400的阵列20中第二预设蓝光Micro-LED200，使得第二预设蓝光Micro-LED200上反应聚成透镜。\n\n[0033]结合图4，使蓝光Micro-LED400的阵列20中的第二预设蓝光Micro-LED200发亮，进而使第二预设蓝光Micro-LED200上反应聚成透镜。经过该步骤处理形成的第二预设蓝光Micro-LED200能够发第二颜色的光。具体的，在聚成透镜后，透镜上形成第二颜色的色素。\n\n[0034]以上实施方式中Micro-LED的阵列20中蓝光Micro-LED400先后与不同的颜色的光敏溶液接触，在接触第一颜色光敏溶液后，点亮第一预设蓝光Micro-LED100，此时被点亮的第一预设蓝光Micro-LED100发蓝光，使其与第一颜色光敏溶液发生作用，反应聚成透镜，进而使得第一预设蓝光Micro-LED100能够发出第一颜色的光，同时第一预设蓝光Micro-LED100之外的其他Micro-LED不会与第一颜色光敏溶液反应。在接触第二颜色光敏溶液后，点亮第二预设蓝光Micro-LED200，此时被点亮的第二预设蓝光Micro-LED200发蓝光，使其与第二颜色光敏溶液发生作用，也使其反应聚成透镜，同时第二预设蓝光Micro-LED200之外的其他Micro-LED不会与第一颜色光敏溶液反应，使得第二预设蓝光Micro-LED200能够发出第二颜色的光。在此基础上，再与剩下的没有点亮，且没有与第一颜色或第二颜色溶液反应聚成透镜的蓝光Micro-LED300，即发蓝光的部分蓝光Micro-LED300构成三种颜色，进而实现Micro-LED发彩色的效果。\n\n[0035]可选地，第一颜色、第二颜色分别是红色、绿色，第一预设蓝光Micro-LED100上反应聚成透镜后，形成红色像素，第二预设蓝光Micro-LED200上反应聚成透镜后，形成绿色像素。此时三种颜色构成彩色的三原色，通过控制以上红、绿、蓝三种颜色的深浅即可制成各种彩色的Micro-LED。\n\n[0036]可以理解的，在其他实施例中，第一颜色也可以为绿色，第二颜色为红色，即第一预设蓝光Micro-LED100上反应聚成透镜后，形成绿色像素，第二预设蓝光Micro-LED200上反应聚成透镜后，形成红色像素。\n\n[0037]可选地，每一第一预设蓝光Micro-LED100周围均设有第二预设蓝光Micro-LED200及蓝光Micro-LED300。采用这样的分布，经过步骤S102、S103、S104和S105之后第一预设蓝光Micro-LED100可发红光(或绿光)，第二预设蓝光Micro-LED200可发绿光(或红光)，再结合发蓝光的蓝光Micro-LED300，即可定义一个红绿蓝三原色构成的像素。基板一侧具有多个以上所述的像素，进而实现整个基板的Micro-LED发彩色的效果。\n\n[0038]请参阅图5，为本发明制作彩色Micro-LED的方法的另一实施例方式的流程示意图。该方法包括：\n\n[0039]S201：提供基板10，基板10一侧具有多个蓝光Micro-LED400的阵列20。\n\n[0040]S202：将蓝光Micro-LED400的阵列20发光面朝下浸入第一颜色光敏树脂溶液中。\n\n[0041]蓝光Micro-LED400的阵列20发光面朝下浸入以基板10具有Micro-LED的一侧平齐即可，这样可以保护基板10另一侧的电路。可选地，蓝光Micro-LED400的阵列20发光面朝下浸入一部分也可以，只要能与光敏树脂溶液反应形成透镜即可。可以理解的，在其他实施例中，在电路密封性良好的情况下也可以是蓝光Micro-LED400的阵列20发光面朝上，将整个基板10浸入第一颜色光敏树脂溶液中。\n\n[0042]S203：通过一控制电路通入电流使第一预设蓝光Micro-LED100发光，使第一颜色的像素进行光反应在第一预设蓝色Micro-LED100上聚成透镜。\n\n[0043]该步骤中，只有第一预设蓝光Micro-LED100通电发光，第二预设蓝色Micro-LED200和其他剩余的蓝色Micro-LED300均没有通电。可以理解的，在其他实施例中，也可以通过其他方式点亮第一预设蓝光Micro-LED100，比如蓄电池或者太阳能等。可选地，该步骤中的电流小于30mA。\n\n[0044]S204：将蓝光Micro-LED400的阵列发光面朝下浸入第二颜色光敏树脂溶液中。此步骤的做法与步骤S202类似，此不赘述。\n\n[0045]S205：通过一控制电路通入电流使第二预设蓝光Micro-LED200发光，使第二颜色的像素进行光反应在第二预设蓝色Micro-LED200上聚成透镜。此步骤的做法与步骤S203类似，此不赘述。\n\n[0046]可以理解的，控制电路包括第一控制电路和第二控制电路，第一控制电路连接第一预设蓝色Micro-LED100，第二控制电路连接第二预设蓝色Micro-LED200。第一控制电路连接基板10一侧上的所有第一预设蓝色Micro-LED100，第二控制电路连接基板10一侧上的所有第二预设蓝色Micro-LED200。\n\n[0047]可选地，第一颜色光敏树脂溶液和第二颜色光敏树脂溶液均包括光敏树脂，还包括荧光粉和/或量子点颜料。进一步，光敏树脂包括光敏引发剂，还包括树脂单体、预聚物、助剂及用于树脂改性的纳米颗粒中的任意一种或几种的组合。\n\n[0048]优选地，由于量子点颜料具有很好的光稳定性，因此量子点颜料的荧光强度比其他荧光粉的发光强度均高，例如其比最常用的有机荧光材料“罗丹明6G”高20倍，它的稳定性是“罗丹明6G”的100倍以上。因此，较荧光粉而言采用量子点颜料制作的显示模组发光效率高，色彩饱和度更好。\n\n[0049]其次，由于量子点颜料具有宽的激发谱和窄的发射谱。使用同一激发光源可以激发几个电子，因此大大提高蓝光的转化效率。\n\n[0050]可选地，光敏引发剂重量含量小于等于5％。\n\n[0051]可选地，荧光粉和/或量子点颜料的含量为1％-1.5％。\n\n[0052]可选地，在其他实施例中，在步骤S203和/或S205之后还可以包括：通过控制电路通入电流使第一预设蓝光Micro-LED100和/或第二预设蓝光Micro-LED200再次发光，使得其上的光敏树脂核及光敏树脂滴液进一步固化形成透镜。具体的，步骤中的电流大于30mA。\n\n[0053]参见图6，本发明还提供一种显示模组30，其包括如以上任一实施方式中的方法所制得的具有Micro-LED400的阵列20。\n\n[0054]参见图7，本发明还提供一种终端40，其包括以上所描述的Micro-LED阵列的显示模组30。本发明提供的显示模组30和终端40中的Micro-LED发彩色光，大大提高了产品的优越性，丰富产品的性能，提高用户的体验感。而且，本发明中的具有Micro-LED400的阵列20可以根据显示模组30和终端40的大小设置不同的规格，设置相应匹配数量的Micro-LED，从而巧妙地避免了现有技术实现Micro-LED发彩色光需要批量转运的工序，进而大大提高产品的良率，保证产品的性能。\n\n[0055]以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。');
INSERT INTO `os_patent_instruction_text` VALUES (10605, 23659, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种柔性显示装置的制作方法。\n\n背景技术\n\n[0002]随着显示技术的发展，液晶显示器(Liquid Crystal Display，LCD)和有机发光二极管显示器(Organic Light Emitting Display，OLED)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，已经逐步取代阴极射线管(Cathode Ray Tube，CRT)显示屏，被广泛地应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]其中，OLED显示屏具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽、可实现柔性显示与大面积全色显示等诸多优点，带动了柔性显示技术的发展。\n\n[0004]传统的显示装置，通常选用玻璃材质作为基板，然而，玻璃基板易碎且不具有可挠性，因此使用玻璃基板制成的显示装置对外来应力的容忍较差，且无法用于柔性显示装置的开发。相较之下，柔性基板具有可挠曲特性，且具有较好的强度和韧性，更加轻薄，故市场上使用柔性基板制成柔性显示装置逐渐成为趋势。但受限于当前显示装置的制备工艺，柔性基板需使用硬式基板(例如玻璃)当作载体，作为柔性基板在显示装置的制备过程中的支撑结构，待显示装置制备完成后，再将柔性基板与硬式基板分离，得到柔性显示装置。\n\n[0005]如图1所示，为现有的柔性显示装置的制作方法的示意图，首先提供一玻璃基板100，之后在玻璃基板上涂布柔性基板200，接着依次在柔性基板200上形成驱动电路层300及显示介质层400，最后将柔性基板200从玻璃基板100上剥离，得到柔性显示装置500。在上述制作方法中，柔性基板200从玻璃基板100上的有效剥离至关重要，极大的影响了柔性显示装置的显示效果和良率。目前广泛应用于柔性显示装置的剥离工艺是激光剥离(laserlift off)，具体如图2所示，利用高能量的脉冲激光透过玻璃基板100，轰击玻璃基板100和柔性基板200的界面，破坏柔性基板200与玻璃基板100之间的结合键力，实现柔性基板200与玻璃基板100之间的分离。\n\n[0006]然而，如图3所示，在实际生产时，玻璃基板100在传送和工艺制程过程中，玻璃基板100远离柔性基板200的表面不可避免地会产生缺陷点600(defects)，例如划伤、腐蚀残留、脏物粘附等等，在进行激光剥离制程前的清洗制程并不能改善划伤、腐蚀残留，脏物也难以保证100％清理干净，缺陷点600无法消除。缺陷点600的存在会影响激光透过玻璃基板100，降低了玻璃基板100与柔性基板200的界面在对应缺陷点600位置处接受到的激光能量，导致该处的玻璃基板100与柔性基板200发生粘连而无法分离，使柔性显示装置在此处产生缺陷，极大地降低了柔性显示装置的良率。\n\n发明内容\n\n[0007]本发明的目的在于提供一种柔性显示装置的制作方法，透明刚性基板与柔性基板的界面接收的激光能量均匀，实现柔性基板和透明刚性基板之间的有效分离，提升产品良率，降低激光剥离制程对激光源能量波动的依赖性。\n\n[0008]为实现上述目的，本发明提供一种柔性显示装置的制作方法，包括如下步骤：\n\n[0009]步骤S1、提供透明刚性基板；所述透明刚性基板包括透明刚性衬底、及设于透明刚性衬底至少一侧上的透明的光散射层；\n\n[0010]步骤S2、在透明刚性基板的一侧上依次形成柔性基板、驱动电路层、及显示介质层；\n\n[0011]步骤S3、利用一激光源，从透明刚性基板的一侧对透明刚性基板与柔性基板的界面进行激光照射，将透明刚性基板与柔性基板分离，得到包括柔性基板、驱动电路层、及显示介质层的柔性显示装置。\n\n[0012]所述透明刚性衬底的一侧设有光散射层。\n\n[0013]所述步骤S2具体为：在透明刚性衬底远离光散射层的一侧上依次形成柔性基板、驱动电路层、及显示介质层。\n\n[0014]所述步骤S2具体为：在光散射层远离透明刚性衬底的一侧上依次形成柔性基板、驱动电路层、及显示介质层。\n\n[0015]所述透明刚性基板还包括：设于所述光散射层远离所述透明刚性衬底的一侧的另一透明刚性衬底。\n\n[0016]所述透明刚性衬底的两侧均设有光散射层。\n\n[0017]所述光散射层远离透明刚性衬底的一侧具有多个凹陷；或者，所述光散射层远离透明刚性衬底的一侧具有多个凸起。\n\n[0018]所述凹陷的截面轮廓呈半球型、半椭球型、或三角形；\n\n[0019]所述凸起的截面轮廓呈半球型、半椭球型、或三角形；\n\n[0020]所述凹陷的开口形状呈长条形、“S”字形、矩形、方形、圆形、三角形、或六边形；\n\n[0021]所述凸起的底面形状呈长条形、“S”字形、矩形、方形、圆形、三角形、或六边形。\n\n[0022]所述显示介质层为OLED层、QLED层、Micro LED层、电子纸层、或电泳类显示介质层。\n\n[0023]所述光散射层上的凹陷或凸起的具体形成过程为：在透明刚性衬底上形成透明材料层，利用一掩膜板对所述透明材料层进行黄光制程，形成所述凹陷或凸起。\n\n[0024]本发明的有益效果：本发明提供的一种柔性显示装置的制作方法，通过在透明刚性衬底的至少一侧上设置透明的光散射层，得到透明刚性基板，接着在透明刚性基板的一侧制作柔性基板，并在柔性基板上依次形成驱动电路层及显示介质层，之后，利用激光剥离制程对透明刚性基板与柔性基板的界面进行激光照射，将透明刚性基板与柔性基板分离得到柔性显示装置，由于光散射层的存在，能够对射入的激光进行散射而使透明刚性基板与柔性基板的界面接收的激光能量均匀，实现柔性基板和透明刚性基板之间的有效分离，提升产品良率，降低激光剥离制程对激光源能量波动的依赖性。\n\n附图说明\n\n[0025]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0026]附图中，\n\n[0027]图1为现有的柔性显示装置的制作方法的示意图；\n\n[0028]图2为图1的柔性显示装置的制作方法在激光剥离制程后理想状态的示意图；\n\n[0029]图3为图1的柔性显示装置的制作方法在激光剥离制程后实际状态的示意图；\n\n[0030]图4为本发明的柔性显示装置的制作方法的流程图；\n\n[0031]图5为本发明的柔性显示装置的制作方法第一实施例的步骤S1的示意图；\n\n[0032]图6为本发明的柔性显示装置的制作方法第一实施例的步骤S2的示意图；\n\n[0033]图7及图8为本发明的柔性显示装置的制作方法第一实施例的步骤S3的示意图；\n\n[0034]图9及图10为本发明的柔性显示装置的制作方法第二实施例的步骤S3的示意图；\n\n[0035]图11为本发明的柔性显示装置的制作方法第三实施例的步骤S1的示意图；\n\n[0036]图12为本发明的柔性显示装置的制作方法第四实施例的步骤S1的示意图；\n\n[0037]图13至图16为本发明的柔性显示装置的制作方法的光散射层的剖面结构示意图；\n\n[0038]图17至图20为本发明的柔性显示装置的制作方法的光散射层的俯视结构示意图。\n\n具体实施方式\n\n[0039]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0040]请参阅图4，本发明提供一种柔性显示装置的制作方法，包括如下步骤：\n\n[0041]步骤S1、请参阅图5，提供透明刚性基板10；所述透明刚性基板10包括透明刚性衬底11、及设于透明刚性衬底11的至少一侧上的透明的光散射层12。\n\n[0042]具体地，在本发明的第一实施例中，所述透明刚性衬底11的一侧设有光散射层12。\n\n[0043]具体地，所述透明刚性衬底11的材料可为玻璃。\n\n[0044]具体地，所述光散射层12可选择与透明刚性衬底11材料相同的材料制作，也可以选择与透明刚性衬底11材料不同的透明材料制作。\n\n[0045]具体地，所述光散射层12的厚度的选择范围从纳米级至微米级。\n\n[0046]具体地，请参阅图5及图13至图16，所述光散射层12远离透明刚性衬底11的一侧具有多个凹陷121；或者，所述光散射层12远离透明刚性衬底11的一侧具有多个凸起122。所述凹陷121及凸起122用于对光线进行散射。\n\n[0047]具体地，所述凹陷121及凸起122的大小的选择范围从纳米级至毫米级。\n\n[0048]具体地，所述凹陷121及凸起122的位置根据产品的实际需求进行设计，可均匀分布，也可非均匀分布。\n\n[0049]具体地，所述凹陷121的截面轮廓可以但不限于呈半球型、半椭球型、或三角形；所述凸起122的截面轮廓可以但不限于呈半球型、半椭球型、或三角形。\n\n[0050]具体地，请参阅图17至图20，所述凹陷121的开口形状可以但不限于呈长条形、“S”字形、矩形、方形、圆形、三角形、或六边形；所述凸起122的底面形状可以但不限于呈长条形、“S”字形、矩形、方形、圆形、三角形、或六边形。\n\n[0051]具体地，所述光散射层12上的凹陷121或凸起122的具体形成过程为：在透明刚性衬底11上形成透明材料层，利用一掩膜板(mask)对所述透明材料层进行黄光制程(包括曝光、显影、蚀刻)，在透明材料层上制作凸起122或凹陷121，得到具有凹陷121或凸起122的光散射层12。\n\n[0052]步骤S2、请参阅图6，在透明刚性基板10的一侧上依次形成柔性基板20、驱动电路层30、及显示介质层40。\n\n[0053]具体地，在本发明的第一实施例中，所述步骤S2具体为：在透明刚性衬底11远离光散射层12的一侧上依次形成柔性基板20、驱动电路层30、及显示介质层40。\n\n[0054]具体地，所述柔性基板20的材料可选择聚酰亚胺(PI)、聚醚酰亚胺(PEI)、聚苯硫醚(PPS)、聚芳酯(PAR)等一种或几种的组合。具体地，依据应用领域的不同，柔性基板20可以透明，也可以非透明。\n\n[0055]具体地，所述驱动电路层30用于显示画面的控制。\n\n[0056]具体地，所述显示介质层40可为OLED层、量子点发光二极管(QLED)层、微发光二极管(Micro LED)层、电子纸层、或电泳类显示介质层。\n\n[0057]步骤S3、请参阅图7，利用一激光源，从透明刚性基板10的一侧对透明刚性基板10与柔性基板20的界面进行激光照射，将透明刚性基板10与柔性基板20分离，得到包括柔性基板20、驱动电路层30及显示介质层40的柔性显示装置。\n\n[0058]具体地，在本发明的第一实施例中，所述步骤S3利用一激光源从光散射层12远离透明刚性衬底11的一侧向透明刚性基板10与柔性基板20的界面，也即透明刚性衬底11与柔性基板20的界面进行激光照射。\n\n[0059]需要说明的是，请参阅图8，由于光散射层12的存在，激光源发出的激光射入该光散射层12后会发生散射，从而即使在激光剥离制程之前的工艺过程中透明刚性基板10表面也即光散射层12表面存在无法透光的缺陷点13，激光剥离制程中激光源发出的激光也能够绕过缺陷点13而照射在透明刚性基板10与柔性基板20的界面上与缺陷点13相对的位置，从而激光均匀照射在透明刚性基板10与柔性基板20的界面，使该界面每一处接收到的激光能量一致，保证激光剥离制程之后透明刚性基板10与柔性基板20界面的每一位置均分离，提升激光剥离制程的良率，进而提升产品良率，同时降低激光剥离制程对激光源能量波动的依赖性，扩大激光剥离制程的工艺窗口，降低设备的成本，从而使产品成本下降，提升产品的竞争力。\n\n[0060]在本发明的第二实施例中，仍然在透明刚性衬底11的一侧设置光散射层12而得到透明刚性基板10，其与第一实施例的区别在于，步骤S2中在光散射层12远离透明刚性衬底11的一侧上依次形成柔性基板20、驱动电路层30、及显示介质层40，从而在透明刚性基板10的一侧上制作柔性基板20、驱动电路层30、及显示介质层40；进而，请参阅图9，所述步骤S3在通过激光剥离制程分离透明刚性基板10与柔性基板20时，利用一激光源从透明刚性衬底11远离光散射层12的一侧向透明刚性基板10与柔性基板20的界面，也即光散射层12与柔性基板20的界面进行激光照射。其余均与第一实施例相同，在此不赘述。\n\n[0061]需要说明的是，请参阅图10，由于光散射层12的存在，激光源发出的激光射入该散射层12后会发生散射，从而即使在激光剥离制程之前的工艺过程中透明刚性基板10表面也即透明刚性衬底11表面存在无法透光的缺陷点13，激光剥离制程中激光源发出的激光也能够绕过缺陷点13而照射在透明刚性基板10与柔性基板20的界面上与缺陷点13相对的位置，从而激光均匀照射在透明刚性基板10与柔性基板20的界面，使该界面每一处接收到的激光能量一致，保证激光剥离制程之后透明刚性基板10与柔性基板20界面的每一位置均分离，提升激光剥离制程的良率，进而提升产品良率，同时降低激光剥离制程对激光源能量波动的依赖性，扩大激光剥离制程的工艺窗口，降低设备的成本，从而使产品成本下降，提升产品的竞争力；并且，由于柔性基板20是直接制作在光散射层12上的，由于凹陷121或凸起122的存在，柔性基板20各处厚度不尽一致，有利于分散和减小弯折时所产生的应力，避免应力的过于集中，最终显著地提升柔性显示装置的耐弯折性能。\n\n[0062]在本发明的第三实施例中，如图11所示，仍然在透明刚性衬底11的一侧设置光散射层12，但其与第一实施例的区别在于，所述透明刚性基板10还包括设于所述光散射层12远离所述透明刚性衬底11的一侧的另一透明刚性衬底11，也即透明刚性基板10为两层透明刚性衬底11夹一光散射层12的结构，光散射层12位于透明刚性基板10的内部，步骤S2中在任一透明刚性衬底11远离光散射层12的一侧上依次形成柔性基板20、驱动电路层30、及显示介质层40。其余均与第一实施例相同，在此不赘述。该实施例在保证透明刚性基板10与柔性基板20的界面在激光剥离制程中收到激光能量均匀的同时，透明刚性基板10两侧的平坦性提升。\n\n[0063]在本发明的第四实施例中，如图12所示，所述透明刚性衬底11的两侧均设有光散射层12，步骤S2中在任一光散射层12远离透明刚性衬底11的一侧上依次形成柔性基板20、驱动电路层30、及显示介质层40。两光散射层12可以具有相同或不同的材料或厚度，两光散射层12可以均具有凸起122或凹陷121，凸起122或凹陷121的大小、位置、截面轮廓或开口形状/底面形状可以相同或不同，也可以其中一光散射层12具有凸起122，另一光散射层12具有凹陷121。其余均与第一实施例相同，在此不赘述。该实施例采用两层光散射层12夹一透明刚性衬底11的结构，进一步提升了透明刚性基板10与柔性基板20界面接收的激光能量的均匀性。\n\n[0064]综上所述，本发明的柔性显示装置的制作方法，通过在透明刚性衬底的至少一侧上设置透明的光散射层，得到透明刚性基板，接着在透明刚性基板的一侧制作柔性基板，并在柔性基板上依次形成驱动电路层及显示介质层，之后，利用激光剥离制程对透明刚性基板与柔性基板的界面进行激光照射，将透明刚性基板与柔性基板分离得到柔性显示装置，由于光散射层的存在，能够对射入的激光进行散射而使透明刚性基板与柔性基板的界面接收的激光能量均匀，实现柔性基板和透明刚性基板之间的有效分离，提升产品良率，降低激光剥离制程对激光源能量波动的依赖性。\n\n[0065]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种柔性显示装置的制作方法。\n\n背景技术\n\n[0002]随着显示技术的发展，液晶显示器(Liquid Crystal Display，LCD)和有机发光二极管显示器(Organic Light Emitting Display，OLED)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，已经逐步取代阴极射线管(Cathode Ray Tube，CRT)显示屏，被广泛地应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]其中，OLED显示屏具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽、可实现柔性显示与大面积全色显示等诸多优点，带动了柔性显示技术的发展。\n\n[0004]传统的显示装置，通常选用玻璃材质作为基板，然而，玻璃基板易碎且不具有可挠性，因此使用玻璃基板制成的显示装置对外来应力的容忍较差，且无法用于柔性显示装置的开发。相较之下，柔性基板具有可挠曲特性，且具有较好的强度和韧性，更加轻薄，故市场上使用柔性基板制成柔性显示装置逐渐成为趋势。但受限于当前显示装置的制备工艺，柔性基板需使用硬式基板(例如玻璃)当作载体，作为柔性基板在显示装置的制备过程中的支撑结构，待显示装置制备完成后，再将柔性基板与硬式基板分离，得到柔性显示装置。\n\n[0005]如图1所示，为现有的柔性显示装置的制作方法的示意图，首先提供一玻璃基板100，之后在玻璃基板上涂布柔性基板200，接着依次在柔性基板200上形成驱动电路层300及显示介质层400，最后将柔性基板200从玻璃基板100上剥离，得到柔性显示装置500。在上述制作方法中，柔性基板200从玻璃基板100上的有效剥离至关重要，极大的影响了柔性显示装置的显示效果和良率。目前广泛应用于柔性显示装置的剥离工艺是激光剥离(laserlift off)，具体如图2所示，利用高能量的脉冲激光透过玻璃基板100，轰击玻璃基板100和柔性基板200的界面，破坏柔性基板200与玻璃基板100之间的结合键力，实现柔性基板200与玻璃基板100之间的分离。\n\n[0006]然而，如图3所示，在实际生产时，玻璃基板100在传送和工艺制程过程中，玻璃基板100远离柔性基板200的表面不可避免地会产生缺陷点600(defects)，例如划伤、腐蚀残留、脏物粘附等等，在进行激光剥离制程前的清洗制程并不能改善划伤、腐蚀残留，脏物也难以保证100％清理干净，缺陷点600无法消除。缺陷点600的存在会影响激光透过玻璃基板100，降低了玻璃基板100与柔性基板200的界面在对应缺陷点600位置处接受到的激光能量，导致该处的玻璃基板100与柔性基板200发生粘连而无法分离，使柔性显示装置在此处产生缺陷，极大地降低了柔性显示装置的良率。\n\n发明内容\n\n[0007]本发明的目的在于提供一种柔性显示装置的制作方法，透明刚性基板与柔性基板的界面接收的激光能量均匀，实现柔性基板和透明刚性基板之间的有效分离，提升产品良率，降低激光剥离制程对激光源能量波动的依赖性。\n\n[0008]为实现上述目的，本发明提供一种柔性显示装置的制作方法，包括如下步骤：\n\n[0009]步骤S1、提供透明刚性基板；所述透明刚性基板包括透明刚性衬底、及设于透明刚性衬底至少一侧上的透明的光散射层；\n\n[0010]步骤S2、在透明刚性基板的一侧上依次形成柔性基板、驱动电路层、及显示介质层；\n\n[0011]步骤S3、利用一激光源，从透明刚性基板的一侧对透明刚性基板与柔性基板的界面进行激光照射，将透明刚性基板与柔性基板分离，得到包括柔性基板、驱动电路层、及显示介质层的柔性显示装置。\n\n[0012]所述透明刚性衬底的一侧设有光散射层。\n\n[0013]所述步骤S2具体为：在透明刚性衬底远离光散射层的一侧上依次形成柔性基板、驱动电路层、及显示介质层。\n\n[0014]所述步骤S2具体为：在光散射层远离透明刚性衬底的一侧上依次形成柔性基板、驱动电路层、及显示介质层。\n\n[0015]所述透明刚性基板还包括：设于所述光散射层远离所述透明刚性衬底的一侧的另一透明刚性衬底。\n\n[0016]所述透明刚性衬底的两侧均设有光散射层。\n\n[0017]所述光散射层远离透明刚性衬底的一侧具有多个凹陷；或者，所述光散射层远离透明刚性衬底的一侧具有多个凸起。\n\n[0018]所述凹陷的截面轮廓呈半球型、半椭球型、或三角形；\n\n[0019]所述凸起的截面轮廓呈半球型、半椭球型、或三角形；\n\n[0020]所述凹陷的开口形状呈长条形、“S”字形、矩形、方形、圆形、三角形、或六边形；\n\n[0021]所述凸起的底面形状呈长条形、“S”字形、矩形、方形、圆形、三角形、或六边形。\n\n[0022]所述显示介质层为OLED层、QLED层、Micro LED层、电子纸层、或电泳类显示介质层。\n\n[0023]所述光散射层上的凹陷或凸起的具体形成过程为：在透明刚性衬底上形成透明材料层，利用一掩膜板对所述透明材料层进行黄光制程，形成所述凹陷或凸起。\n\n[0024]本发明的有益效果：本发明提供的一种柔性显示装置的制作方法，通过在透明刚性衬底的至少一侧上设置透明的光散射层，得到透明刚性基板，接着在透明刚性基板的一侧制作柔性基板，并在柔性基板上依次形成驱动电路层及显示介质层，之后，利用激光剥离制程对透明刚性基板与柔性基板的界面进行激光照射，将透明刚性基板与柔性基板分离得到柔性显示装置，由于光散射层的存在，能够对射入的激光进行散射而使透明刚性基板与柔性基板的界面接收的激光能量均匀，实现柔性基板和透明刚性基板之间的有效分离，提升产品良率，降低激光剥离制程对激光源能量波动的依赖性。\n\n附图说明\n\n[0025]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0026]附图中，\n\n[0027]图1为现有的柔性显示装置的制作方法的示意图；\n\n[0028]图2为图1的柔性显示装置的制作方法在激光剥离制程后理想状态的示意图；\n\n[0029]图3为图1的柔性显示装置的制作方法在激光剥离制程后实际状态的示意图；\n\n[0030]图4为本发明的柔性显示装置的制作方法的流程图；\n\n[0031]图5为本发明的柔性显示装置的制作方法第一实施例的步骤S1的示意图；\n\n[0032]图6为本发明的柔性显示装置的制作方法第一实施例的步骤S2的示意图；\n\n[0033]图7及图8为本发明的柔性显示装置的制作方法第一实施例的步骤S3的示意图；\n\n[0034]图9及图10为本发明的柔性显示装置的制作方法第二实施例的步骤S3的示意图；\n\n[0035]图11为本发明的柔性显示装置的制作方法第三实施例的步骤S1的示意图；\n\n[0036]图12为本发明的柔性显示装置的制作方法第四实施例的步骤S1的示意图；\n\n[0037]图13至图16为本发明的柔性显示装置的制作方法的光散射层的剖面结构示意图；\n\n[0038]图17至图20为本发明的柔性显示装置的制作方法的光散射层的俯视结构示意图。\n\n具体实施方式\n\n[0039]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0040]请参阅图4，本发明提供一种柔性显示装置的制作方法，包括如下步骤：\n\n[0041]步骤S1、请参阅图5，提供透明刚性基板10；所述透明刚性基板10包括透明刚性衬底11、及设于透明刚性衬底11的至少一侧上的透明的光散射层12。\n\n[0042]具体地，在本发明的第一实施例中，所述透明刚性衬底11的一侧设有光散射层12。\n\n[0043]具体地，所述透明刚性衬底11的材料可为玻璃。\n\n[0044]具体地，所述光散射层12可选择与透明刚性衬底11材料相同的材料制作，也可以选择与透明刚性衬底11材料不同的透明材料制作。\n\n[0045]具体地，所述光散射层12的厚度的选择范围从纳米级至微米级。\n\n[0046]具体地，请参阅图5及图13至图16，所述光散射层12远离透明刚性衬底11的一侧具有多个凹陷121；或者，所述光散射层12远离透明刚性衬底11的一侧具有多个凸起122。所述凹陷121及凸起122用于对光线进行散射。\n\n[0047]具体地，所述凹陷121及凸起122的大小的选择范围从纳米级至毫米级。\n\n[0048]具体地，所述凹陷121及凸起122的位置根据产品的实际需求进行设计，可均匀分布，也可非均匀分布。\n\n[0049]具体地，所述凹陷121的截面轮廓可以但不限于呈半球型、半椭球型、或三角形；所述凸起122的截面轮廓可以但不限于呈半球型、半椭球型、或三角形。\n\n[0050]具体地，请参阅图17至图20，所述凹陷121的开口形状可以但不限于呈长条形、“S”字形、矩形、方形、圆形、三角形、或六边形；所述凸起122的底面形状可以但不限于呈长条形、“S”字形、矩形、方形、圆形、三角形、或六边形。\n\n[0051]具体地，所述光散射层12上的凹陷121或凸起122的具体形成过程为：在透明刚性衬底11上形成透明材料层，利用一掩膜板(mask)对所述透明材料层进行黄光制程(包括曝光、显影、蚀刻)，在透明材料层上制作凸起122或凹陷121，得到具有凹陷121或凸起122的光散射层12。\n\n[0052]步骤S2、请参阅图6，在透明刚性基板10的一侧上依次形成柔性基板20、驱动电路层30、及显示介质层40。\n\n[0053]具体地，在本发明的第一实施例中，所述步骤S2具体为：在透明刚性衬底11远离光散射层12的一侧上依次形成柔性基板20、驱动电路层30、及显示介质层40。\n\n[0054]具体地，所述柔性基板20的材料可选择聚酰亚胺(PI)、聚醚酰亚胺(PEI)、聚苯硫醚(PPS)、聚芳酯(PAR)等一种或几种的组合。具体地，依据应用领域的不同，柔性基板20可以透明，也可以非透明。\n\n[0055]具体地，所述驱动电路层30用于显示画面的控制。\n\n[0056]具体地，所述显示介质层40可为OLED层、量子点发光二极管(QLED)层、微发光二极管(Micro LED)层、电子纸层、或电泳类显示介质层。\n\n[0057]步骤S3、请参阅图7，利用一激光源，从透明刚性基板10的一侧对透明刚性基板10与柔性基板20的界面进行激光照射，将透明刚性基板10与柔性基板20分离，得到包括柔性基板20、驱动电路层30及显示介质层40的柔性显示装置。\n\n[0058]具体地，在本发明的第一实施例中，所述步骤S3利用一激光源从光散射层12远离透明刚性衬底11的一侧向透明刚性基板10与柔性基板20的界面，也即透明刚性衬底11与柔性基板20的界面进行激光照射。\n\n[0059]需要说明的是，请参阅图8，由于光散射层12的存在，激光源发出的激光射入该光散射层12后会发生散射，从而即使在激光剥离制程之前的工艺过程中透明刚性基板10表面也即光散射层12表面存在无法透光的缺陷点13，激光剥离制程中激光源发出的激光也能够绕过缺陷点13而照射在透明刚性基板10与柔性基板20的界面上与缺陷点13相对的位置，从而激光均匀照射在透明刚性基板10与柔性基板20的界面，使该界面每一处接收到的激光能量一致，保证激光剥离制程之后透明刚性基板10与柔性基板20界面的每一位置均分离，提升激光剥离制程的良率，进而提升产品良率，同时降低激光剥离制程对激光源能量波动的依赖性，扩大激光剥离制程的工艺窗口，降低设备的成本，从而使产品成本下降，提升产品的竞争力。\n\n[0060]在本发明的第二实施例中，仍然在透明刚性衬底11的一侧设置光散射层12而得到透明刚性基板10，其与第一实施例的区别在于，步骤S2中在光散射层12远离透明刚性衬底11的一侧上依次形成柔性基板20、驱动电路层30、及显示介质层40，从而在透明刚性基板10的一侧上制作柔性基板20、驱动电路层30、及显示介质层40；进而，请参阅图9，所述步骤S3在通过激光剥离制程分离透明刚性基板10与柔性基板20时，利用一激光源从透明刚性衬底11远离光散射层12的一侧向透明刚性基板10与柔性基板20的界面，也即光散射层12与柔性基板20的界面进行激光照射。其余均与第一实施例相同，在此不赘述。\n\n[0061]需要说明的是，请参阅图10，由于光散射层12的存在，激光源发出的激光射入该散射层12后会发生散射，从而即使在激光剥离制程之前的工艺过程中透明刚性基板10表面也即透明刚性衬底11表面存在无法透光的缺陷点13，激光剥离制程中激光源发出的激光也能够绕过缺陷点13而照射在透明刚性基板10与柔性基板20的界面上与缺陷点13相对的位置，从而激光均匀照射在透明刚性基板10与柔性基板20的界面，使该界面每一处接收到的激光能量一致，保证激光剥离制程之后透明刚性基板10与柔性基板20界面的每一位置均分离，提升激光剥离制程的良率，进而提升产品良率，同时降低激光剥离制程对激光源能量波动的依赖性，扩大激光剥离制程的工艺窗口，降低设备的成本，从而使产品成本下降，提升产品的竞争力；并且，由于柔性基板20是直接制作在光散射层12上的，由于凹陷121或凸起122的存在，柔性基板20各处厚度不尽一致，有利于分散和减小弯折时所产生的应力，避免应力的过于集中，最终显著地提升柔性显示装置的耐弯折性能。\n\n[0062]在本发明的第三实施例中，如图11所示，仍然在透明刚性衬底11的一侧设置光散射层12，但其与第一实施例的区别在于，所述透明刚性基板10还包括设于所述光散射层12远离所述透明刚性衬底11的一侧的另一透明刚性衬底11，也即透明刚性基板10为两层透明刚性衬底11夹一光散射层12的结构，光散射层12位于透明刚性基板10的内部，步骤S2中在任一透明刚性衬底11远离光散射层12的一侧上依次形成柔性基板20、驱动电路层30、及显示介质层40。其余均与第一实施例相同，在此不赘述。该实施例在保证透明刚性基板10与柔性基板20的界面在激光剥离制程中收到激光能量均匀的同时，透明刚性基板10两侧的平坦性提升。\n\n[0063]在本发明的第四实施例中，如图12所示，所述透明刚性衬底11的两侧均设有光散射层12，步骤S2中在任一光散射层12远离透明刚性衬底11的一侧上依次形成柔性基板20、驱动电路层30、及显示介质层40。两光散射层12可以具有相同或不同的材料或厚度，两光散射层12可以均具有凸起122或凹陷121，凸起122或凹陷121的大小、位置、截面轮廓或开口形状/底面形状可以相同或不同，也可以其中一光散射层12具有凸起122，另一光散射层12具有凹陷121。其余均与第一实施例相同，在此不赘述。该实施例采用两层光散射层12夹一透明刚性衬底11的结构，进一步提升了透明刚性基板10与柔性基板20界面接收的激光能量的均匀性。\n\n[0064]综上所述，本发明的柔性显示装置的制作方法，通过在透明刚性衬底的至少一侧上设置透明的光散射层，得到透明刚性基板，接着在透明刚性基板的一侧制作柔性基板，并在柔性基板上依次形成驱动电路层及显示介质层，之后，利用激光剥离制程对透明刚性基板与柔性基板的界面进行激光照射，将透明刚性基板与柔性基板分离得到柔性显示装置，由于光散射层的存在，能够对射入的激光进行散射而使透明刚性基板与柔性基板的界面接收的激光能量均匀，实现柔性基板和透明刚性基板之间的有效分离，提升产品良率，降低激光剥离制程对激光源能量波动的依赖性。\n\n[0065]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10606, 23660, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种转移装置及微型发光二极管的转移方法。\n\n背景技术\n\n[0002]磁流变液(MRF)是一种新型智能流体材料。在磁场作用下，MRF可由液态瞬间转变为类固态，当外加磁场撤去后，MRF又能迅速的恢复到液体状态；正是由于MRF的这种独特的性质，使其广泛应用于精密加工领域。\n\n[0003]在微型发光二极管显示(Micro LED)领域，为了制作发光二极管显示器，需要把微型发光二极管从原始衬底转移到接收基板排列成阵列，涉及巨量且微型发光二级管精确转移问题。现有技术中，一般通过静电吸附的方式将所述微型发光二极管吸附至转移头上，并转移至接收基板上。但是，静电吸附的吸附力较小，使得转移过程中容易损坏所述微型发光二极管，从而转移难度较大。并且，静电吸附的效率较低。\n\n发明内容\n\n[0004]本发明的提供一种转移装置及微型发光二极管的转移方法，降低所述微型发光二极管转移难度，提高转移效率。\n\n[0005]所述转移装置包括包括移动部及与所述移动部活动连接的转移头，所述转移头包括外壳、填充于所述外壳内的磁流变液，及设于所述外壳上的电磁装置，所述电磁装置产生磁场，所述磁流变液位于所述磁场内，所述外壳包括一出液孔，所述磁流变液从所述出液孔流出。\n\n[0006]其中，所述电磁装置包括电磁铁或者电磁线圈，及与所述电磁铁或者电磁线圈进行电连接的控制单元，通过所述控制单元控制所述电磁铁或电磁线圈磁场的产生与消除，并控制所述电磁铁或电磁线圈产生磁场的大小及时间。\n\n[0007]其中，所述电磁铁或所述电磁线圈设于所述外壳的内部或外部。\n\n[0008]其中，所述电磁铁或所述电磁线圈为所述外壳。\n\n[0009]其中，所述磁流变液自然状态下为液态，在所述磁场作用下为固态。\n\n[0010]其中，所述转移头有多个，多个所述转移头间隔设置。\n\n[0011]本发明还提供一种微型发光二极管转移方法，包括：\n\n[0012]提供上述的转移装置；\n\n[0013]将所述转移装置的转移头移动至第一基板上的微型发光二极管处，并将所述转移头的出液孔靠近所述微型发光二极管；控制液态的所述磁流变液从所述出液孔流出并包覆所述微型发光二极管；\n\n[0014]控制液态的控制所述电磁装置产生磁场，使所述磁流变液由液态变为固态，所述微型发光二极管与所述转移头通过所述磁流变液进行粘连；\n\n[0015]移动所述微型发光二极管至第二基板；\n\n[0016]消除所述电磁装置产生的磁场，所述磁流变液由固态变为液态，以使所述微型发光二极管与所述转移头分离。\n\n[0017]其中，通过与所述电磁装置电连接的控制单元控制所述电磁装置的通断电，以实现所述电磁装置的磁场的产生与消除。\n\n[0018]其中，所述转移头的出液孔靠近所述第一基板上的微型发光二极管时，所述转移头的出液孔与所述第一基板上的微型发光二极管的距离为1μm-3μm。\n\n[0019]其中，所述转移头为多个，多个所述转移头同时转移多个所述发光二极管。\n\n[0020]本发明提供的所述转移装置及微型发光二极管的转移方法，通过在所述转移头的外壳内填充磁流变液，并通过所述电磁装置控制所述磁流变液的状态。使得所述转移头靠近所述微型发光二极管时，所述磁流变液为液态，并包覆所述微型发光二极管；随后控制所述磁流变液为固态，从而实现所述微型发光二极管与转移头的连接；再将所述微型发光二极管转移至所述第二基板上，并消除所述电磁装置的磁场，使所述微型发光二极管与转移头分离，从而实现所述微型发光二极管从所述第一基板转移至所述第二基板上。所述微型发光二极管的转移过程中，所述微型发光二极管与转移头之间通过所述磁流变液进行物理连接，增加所述微型发光二极管与转移头之间的作用力，进而防止所述微型发光二极管转移过程中的损坏，从而降低转移难度，并增加所述微型发光二极管的转移效率。\n\n附图说明\n\n[0021]为更清楚地阐述本发明的构造特征和功效，下面结合附图与具体实施例来对其进行详细说明。\n\n[0022]图1是本发明实施例所述转移头示意图；\n\n[0023]图2是本发明实施例所述微型发光二极管的转移过程的流程图；\n\n[0024]图3-图6是本发明实施例所述微型发光二极管的转移过程各步骤示意图。\n\n具体实施例\n\n[0025]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。其中，附图仅用于示例性说明，表示的仅是示意图，不能理解为对本专利的限制。\n\n[0026]本发明提供一种转移装置，所述转移装置可以用于转移芯片、微型基板、贴片等各种微型件。本实施例中，所述转移装置主要用于在微型发光二极管显示器的制作过程中所述微型发光二极管的转移。\n\n[0027]请参阅图1，本发明提供一种转移装置100。本实施例中，所述转移装置100用于将设于第一基板220上的微型发光二极管210转移至第二基板230上。其中，所述第一基板220为原始衬底基板，所述微型发光二极管210在所述第一基板220；所述第二基板230为需要使用所述微型发光二极管210的接收基板。所述转移装置100包括移动部(图中未示出)及与所述移动部活动连接的转移头。通过所述移动部能够带动所述转移头实现所述转移头水平面上的移动。并且，所述转移头与所述移动部为活动连接，所述转移头能够相对所述移动部实现竖直面上的移动。所述转移头可以为多个，多个所述转移头间隔排列，且所述多个转移头均与所述移动部连接。每个所述转移头均可以转移一个所述微型发光二极管210，因此，所述多个转移头能同时是实现多个所述微型发光二极管210的转移。所述转移头包括外壳10、填充于所述外壳10内的磁流变液20，及设于所述外壳10上的电磁装置30。\n\n[0028]所述外壳10为一空腔件，包括空腔11。所述外壳10包括圆柱部分及与所述圆柱部分连接的圆锥部分，所述圆柱部分与所述圆锥部分同轴设置，且其底面大小相同。所述外壳10的所述圆锥部分的顶端上设有一出液孔12，所述空腔11通过所述出液孔12与外界连通。本发明另一实施例中，所述外壳10上还设置有一控制开关，所述控制开关靠近所述出液孔12，以通过所述控制开关控制所述磁流变液20是否从所述出液孔12流出。具体的，当需要所述磁流变液20是否从所述出液孔12流出时，开启所述控制开关；当不需要所述磁流变液20是否从所述出液孔12流出时，关闭所述控制开关。\n\n[0029]所述磁流变液20填充于所述外壳10的所述空腔11内。所述磁流变液20自然状态下为液态，在所述磁场作用下能够由液态瞬间转变为固态。在没有磁场的作用时，所述磁流变液能够从所述出液孔流出。所述电磁装置30包括电磁铁或者电磁线圈，及与所述电磁铁或者电磁线圈进行电连接的控制单元。所述电磁铁或者电磁线圈在通电条件下能够产生磁场，断电情况下，所述电磁线圈产生的磁场消失。本实施例中，所述电磁装置30包括电磁线圈，所述电磁线圈缠绕于所述外壳10的外壁，使得所述磁流变液20位于所述电磁线圈产生的磁场内，从而使得通过控制所述电磁线圈产生的磁场控制所述磁流变液的状态。可以理解的是，所述电磁线圈还可以设于所述外壳10的空腔11内，如设于所述外壳10的内壁。或者，在本发明其它的实施例中，所述电磁线圈或者电磁铁还可以直接作为所述转移头的外壳10，从而能够更好控制所述磁流变液20的状态。\n\n[0030]所述电磁装置30还包括控制单元，所述控制单元与所述磁线圈或者电磁铁相连。通过所述控制单元控制所述电磁铁或电磁线圈的通断电，从而控制所述电磁铁或电磁线圈的磁场的产生与消除。进一步的，通过所述控制单元控制通入所述电磁铁或者电磁线圈的电量的大小及通电时间，能够对所述电磁铁或电磁线圈产生的磁场强度及磁场产生的时间长短进行控制。本实施例中，在不需要使用所述转移装置100进行所述微型发光二极管210的转移时，所述控制单元控制所述电磁铁或电磁线圈一直处于通电状态，从而保证所述转移头的外壳10内的磁流变液为固态，防止所述磁流变液从所述转移头的外壳10内流出。本发明另一实施例中，所述转移装置100的所述外壳10上设有一控制开关，在不需要使用所述转移装置100进行所述微型发光二极管210的转移时，所述控制单元也可控制所述电磁铁或电磁线圈一直处于断电状态，通过关闭所述控制开关防止所述磁流变液从所述转移头的外壳10内流出，从而达到节约电源的目的。\n\n[0031]转移所述微型发光二极管210时，通过所述移动部带动所述转移头移动至所述第一基板220上需要转移的所述微型发光二极管210的位置，并调整所述移动头靠近所述微型发光二极管210，使得处于液体状态的所述磁流变液流至所述微型发光二极管210上并部分包覆所述微型发光二极管210。本实施例中，所述移动头靠近所述微型发光二极管210时，所述转移头的出液孔12与所述第一基板220上的微型发光二极管210的距离为1μm-3μm。随后，通过所述控制单元控制所述电磁装置产生磁场，使得所述磁流变液20从液态变为固态，从而实现所述微型发光二极管210与转移头的连接。再次移动所述移动部至所述第二基板230位置，并使所述转移头在竖直方向进行移动，至所述微型发光二极管210移动至所述第二基板220上。再次通过所述控制装置消除所述电磁装置的磁场，使所述微型发光二极管210与所述转移头分离，从而实现所述微型发光二极管210从所述第一基板220转移至所述第二基板230上。并且，在所述微型发光二极管210从所述第一基板220转移至所述第二基板230上后，还可以通过简单的处理方式将所述微型发光二极管210上残留的所述磁流变液20进行去除并回收，如通过风刀将所述微型发光二极管210上残留的所述磁流变液20吹至一收集罐中，并能将收集得到的所述磁流变液20进行进一步的回收利用，减少废气物并降低成本。\n\n[0032]请参阅图2，本发明还提供一种微型发光二极管210的转移方法，包括：\n\n[0033]步骤201、请参阅图3，提供上述的转移装置100，将所述转移装置的转移头移动至第一基板220上的微型发光二极管210处，并使所述转移头的出液孔12靠近所述微型发光二极管210。\n\n[0034]通过所述移动部带动所述转移头移动至所述第一基板220上需要转移的所述微型发光二极管210的位置，并调整所述移动头靠近所述微型发光二极管210，并使所述转移头的出液孔12靠近所述微型发光二极管210。本实施例中，所述移动头靠近所述微型发光二极管210时，所述转移头的出液孔12与所述第一基板220上的微型发光二极管210的距离为1μm-3μm。可以理解的是，当需要同时转移多个所述微型发光二极管210时，可以设置多个所述转移头，通过多个所述转移头同时转移多个所述发光二极管210。本实施例中，此时所述电磁装置30的电磁铁或电磁线圈处于通电状态，使得此时的所述磁流变液20为固态，从而不会从所述出液孔12处流出。本发明另一实施例中，所述转移头的外壳10上设有一控制开关，所述电磁铁或电磁线圈可以处于断电状态，通过关闭所述控制开关防止所述磁流变液从所述出液孔12处流出。\n\n[0035]步骤202、请参阅图4，使所述磁流变液20从所述出液孔12流出并包覆所述微型发光二极管210。\n\n[0036]控制所述电磁装置30的电磁铁或电磁线圈处于断电状态，使所述所述磁流变液20变为液体状态，使得所述磁流变液20自然从所述出液孔12流出并包覆所述微型发光二极管210。本发明另一实施例中，直接打开所述控制开关以使所述磁流变液从所述出液孔12处流出。所述磁流变液20只需部分包覆所述微型发光二极管210，从而在保证所述微型发光二极管210与连接头的连接强度的同时，尽量减少所述磁流变液20的使用。\n\n[0037]步骤203、控制所述电磁装置30产生磁场，使所述磁流变液20由液态变为固态，所述微型发光二极管210与所述转移头通过所述磁流变液20进行粘连。\n\n[0038]通过所述控制单元给所述电磁装置30进行通电，使得所述电磁装置30产生磁场并控制通入所述电量的大小控制所述电磁装置30产生磁场的强弱，所述磁流变液20受所述磁场的影响从液态变为固态，即所述微型发光二极管210与转移头通过固态的所述磁流变液进行连接，使得所述微型发光二极管210与转移头通过固态的所述磁流变液实现物理连接，进而使得所述微型发光二极管210与所述转移头之间的作用力增加，防止所述微型发光二极管210转移过程中的损坏，降低所述微型发光二极管210的转移难度。\n\n[0039]步骤204、请参阅图5，移动所述微型发光二极管210至第二基板230。\n\n[0040]通过所述移动部带动固定有所述微型发光二极管210的转移头至所述第二基板230位置，进而通过所述转移头的移动带动所述微型发光二极管210的移动。并使所述转移头在竖直方向进行移动，使所述微型发光二极管210移动至所述第二基板220上。\n\n[0041]步骤205、请参阅图6，消除所述电磁装置30产生的磁场，所述磁流变液20由固态变为液态，使所述微型发光二极管210与所述转移头分离。\n\n[0042]通过所述控制单元给所述电磁装置30进行断电或者降低通入所述电磁装置30的电量，消除或减小所述电磁装置30产生的磁场，从而使得所述磁流变液20从固态变为液态，进而使所述微型发光二极管210与所述转移头分离，所述微型发光二极管210转移至所述第二基板230上。\n\n[0043]本发明中，在所述微型发光二极管210的转移过程时，所述微型发光二极管210与转移头之间通过所述磁流变液20进行物理连接，增加所述微型发光二极管210与所述转移头之间的作用力，进而防止所述微型发光二极管210转移过程中的损坏，从而降低转移难度。并且，通过简单的电磁装置控制所述微型发光二极管210与所述转移头的连接与分离，能够简化所述微型发光二极管210的转移操作，提高所述微型发光二极管210的转移效率。\n\n[0044]以上所述为本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也视为本发明的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种转移装置及微型发光二极管的转移方法。\n\n背景技术\n\n[0002]磁流变液(MRF)是一种新型智能流体材料。在磁场作用下，MRF可由液态瞬间转变为类固态，当外加磁场撤去后，MRF又能迅速的恢复到液体状态；正是由于MRF的这种独特的性质，使其广泛应用于精密加工领域。\n\n[0003]在微型发光二极管显示(Micro LED)领域，为了制作发光二极管显示器，需要把微型发光二极管从原始衬底转移到接收基板排列成阵列，涉及巨量且微型发光二级管精确转移问题。现有技术中，一般通过静电吸附的方式将所述微型发光二极管吸附至转移头上，并转移至接收基板上。但是，静电吸附的吸附力较小，使得转移过程中容易损坏所述微型发光二极管，从而转移难度较大。并且，静电吸附的效率较低。\n\n发明内容\n\n[0004]本发明的提供一种转移装置及微型发光二极管的转移方法，降低所述微型发光二极管转移难度，提高转移效率。\n\n[0005]所述转移装置包括包括移动部及与所述移动部活动连接的转移头，所述转移头包括外壳、填充于所述外壳内的磁流变液，及设于所述外壳上的电磁装置，所述电磁装置产生磁场，所述磁流变液位于所述磁场内，所述外壳包括一出液孔，所述磁流变液从所述出液孔流出。\n\n[0006]其中，所述电磁装置包括电磁铁或者电磁线圈，及与所述电磁铁或者电磁线圈进行电连接的控制单元，通过所述控制单元控制所述电磁铁或电磁线圈磁场的产生与消除，并控制所述电磁铁或电磁线圈产生磁场的大小及时间。\n\n[0007]其中，所述电磁铁或所述电磁线圈设于所述外壳的内部或外部。\n\n[0008]其中，所述电磁铁或所述电磁线圈为所述外壳。\n\n[0009]其中，所述磁流变液自然状态下为液态，在所述磁场作用下为固态。\n\n[0010]其中，所述转移头有多个，多个所述转移头间隔设置。\n\n[0011]本发明还提供一种微型发光二极管转移方法，包括：\n\n[0012]提供上述的转移装置；\n\n[0013]将所述转移装置的转移头移动至第一基板上的微型发光二极管处，并将所述转移头的出液孔靠近所述微型发光二极管；控制液态的所述磁流变液从所述出液孔流出并包覆所述微型发光二极管；\n\n[0014]控制液态的控制所述电磁装置产生磁场，使所述磁流变液由液态变为固态，所述微型发光二极管与所述转移头通过所述磁流变液进行粘连；\n\n[0015]移动所述微型发光二极管至第二基板；\n\n[0016]消除所述电磁装置产生的磁场，所述磁流变液由固态变为液态，以使所述微型发光二极管与所述转移头分离。\n\n[0017]其中，通过与所述电磁装置电连接的控制单元控制所述电磁装置的通断电，以实现所述电磁装置的磁场的产生与消除。\n\n[0018]其中，所述转移头的出液孔靠近所述第一基板上的微型发光二极管时，所述转移头的出液孔与所述第一基板上的微型发光二极管的距离为1μm-3μm。\n\n[0019]其中，所述转移头为多个，多个所述转移头同时转移多个所述发光二极管。\n\n[0020]本发明提供的所述转移装置及微型发光二极管的转移方法，通过在所述转移头的外壳内填充磁流变液，并通过所述电磁装置控制所述磁流变液的状态。使得所述转移头靠近所述微型发光二极管时，所述磁流变液为液态，并包覆所述微型发光二极管；随后控制所述磁流变液为固态，从而实现所述微型发光二极管与转移头的连接；再将所述微型发光二极管转移至所述第二基板上，并消除所述电磁装置的磁场，使所述微型发光二极管与转移头分离，从而实现所述微型发光二极管从所述第一基板转移至所述第二基板上。所述微型发光二极管的转移过程中，所述微型发光二极管与转移头之间通过所述磁流变液进行物理连接，增加所述微型发光二极管与转移头之间的作用力，进而防止所述微型发光二极管转移过程中的损坏，从而降低转移难度，并增加所述微型发光二极管的转移效率。\n\n附图说明\n\n[0021]为更清楚地阐述本发明的构造特征和功效，下面结合附图与具体实施例来对其进行详细说明。\n\n[0022]图1是本发明实施例所述转移头示意图；\n\n[0023]图2是本发明实施例所述微型发光二极管的转移过程的流程图；\n\n[0024]图3-图6是本发明实施例所述微型发光二极管的转移过程各步骤示意图。\n\n具体实施例\n\n[0025]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。其中，附图仅用于示例性说明，表示的仅是示意图，不能理解为对本专利的限制。\n\n[0026]本发明提供一种转移装置，所述转移装置可以用于转移芯片、微型基板、贴片等各种微型件。本实施例中，所述转移装置主要用于在微型发光二极管显示器的制作过程中所述微型发光二极管的转移。\n\n[0027]请参阅图1，本发明提供一种转移装置100。本实施例中，所述转移装置100用于将设于第一基板220上的微型发光二极管210转移至第二基板230上。其中，所述第一基板220为原始衬底基板，所述微型发光二极管210在所述第一基板220；所述第二基板230为需要使用所述微型发光二极管210的接收基板。所述转移装置100包括移动部(图中未示出)及与所述移动部活动连接的转移头。通过所述移动部能够带动所述转移头实现所述转移头水平面上的移动。并且，所述转移头与所述移动部为活动连接，所述转移头能够相对所述移动部实现竖直面上的移动。所述转移头可以为多个，多个所述转移头间隔排列，且所述多个转移头均与所述移动部连接。每个所述转移头均可以转移一个所述微型发光二极管210，因此，所述多个转移头能同时是实现多个所述微型发光二极管210的转移。所述转移头包括外壳10、填充于所述外壳10内的磁流变液20，及设于所述外壳10上的电磁装置30。\n\n[0028]所述外壳10为一空腔件，包括空腔11。所述外壳10包括圆柱部分及与所述圆柱部分连接的圆锥部分，所述圆柱部分与所述圆锥部分同轴设置，且其底面大小相同。所述外壳10的所述圆锥部分的顶端上设有一出液孔12，所述空腔11通过所述出液孔12与外界连通。本发明另一实施例中，所述外壳10上还设置有一控制开关，所述控制开关靠近所述出液孔12，以通过所述控制开关控制所述磁流变液20是否从所述出液孔12流出。具体的，当需要所述磁流变液20是否从所述出液孔12流出时，开启所述控制开关；当不需要所述磁流变液20是否从所述出液孔12流出时，关闭所述控制开关。\n\n[0029]所述磁流变液20填充于所述外壳10的所述空腔11内。所述磁流变液20自然状态下为液态，在所述磁场作用下能够由液态瞬间转变为固态。在没有磁场的作用时，所述磁流变液能够从所述出液孔流出。所述电磁装置30包括电磁铁或者电磁线圈，及与所述电磁铁或者电磁线圈进行电连接的控制单元。所述电磁铁或者电磁线圈在通电条件下能够产生磁场，断电情况下，所述电磁线圈产生的磁场消失。本实施例中，所述电磁装置30包括电磁线圈，所述电磁线圈缠绕于所述外壳10的外壁，使得所述磁流变液20位于所述电磁线圈产生的磁场内，从而使得通过控制所述电磁线圈产生的磁场控制所述磁流变液的状态。可以理解的是，所述电磁线圈还可以设于所述外壳10的空腔11内，如设于所述外壳10的内壁。或者，在本发明其它的实施例中，所述电磁线圈或者电磁铁还可以直接作为所述转移头的外壳10，从而能够更好控制所述磁流变液20的状态。\n\n[0030]所述电磁装置30还包括控制单元，所述控制单元与所述磁线圈或者电磁铁相连。通过所述控制单元控制所述电磁铁或电磁线圈的通断电，从而控制所述电磁铁或电磁线圈的磁场的产生与消除。进一步的，通过所述控制单元控制通入所述电磁铁或者电磁线圈的电量的大小及通电时间，能够对所述电磁铁或电磁线圈产生的磁场强度及磁场产生的时间长短进行控制。本实施例中，在不需要使用所述转移装置100进行所述微型发光二极管210的转移时，所述控制单元控制所述电磁铁或电磁线圈一直处于通电状态，从而保证所述转移头的外壳10内的磁流变液为固态，防止所述磁流变液从所述转移头的外壳10内流出。本发明另一实施例中，所述转移装置100的所述外壳10上设有一控制开关，在不需要使用所述转移装置100进行所述微型发光二极管210的转移时，所述控制单元也可控制所述电磁铁或电磁线圈一直处于断电状态，通过关闭所述控制开关防止所述磁流变液从所述转移头的外壳10内流出，从而达到节约电源的目的。\n\n[0031]转移所述微型发光二极管210时，通过所述移动部带动所述转移头移动至所述第一基板220上需要转移的所述微型发光二极管210的位置，并调整所述移动头靠近所述微型发光二极管210，使得处于液体状态的所述磁流变液流至所述微型发光二极管210上并部分包覆所述微型发光二极管210。本实施例中，所述移动头靠近所述微型发光二极管210时，所述转移头的出液孔12与所述第一基板220上的微型发光二极管210的距离为1μm-3μm。随后，通过所述控制单元控制所述电磁装置产生磁场，使得所述磁流变液20从液态变为固态，从而实现所述微型发光二极管210与转移头的连接。再次移动所述移动部至所述第二基板230位置，并使所述转移头在竖直方向进行移动，至所述微型发光二极管210移动至所述第二基板220上。再次通过所述控制装置消除所述电磁装置的磁场，使所述微型发光二极管210与所述转移头分离，从而实现所述微型发光二极管210从所述第一基板220转移至所述第二基板230上。并且，在所述微型发光二极管210从所述第一基板220转移至所述第二基板230上后，还可以通过简单的处理方式将所述微型发光二极管210上残留的所述磁流变液20进行去除并回收，如通过风刀将所述微型发光二极管210上残留的所述磁流变液20吹至一收集罐中，并能将收集得到的所述磁流变液20进行进一步的回收利用，减少废气物并降低成本。\n\n[0032]请参阅图2，本发明还提供一种微型发光二极管210的转移方法，包括：\n\n[0033]步骤201、请参阅图3，提供上述的转移装置100，将所述转移装置的转移头移动至第一基板220上的微型发光二极管210处，并使所述转移头的出液孔12靠近所述微型发光二极管210。\n\n[0034]通过所述移动部带动所述转移头移动至所述第一基板220上需要转移的所述微型发光二极管210的位置，并调整所述移动头靠近所述微型发光二极管210，并使所述转移头的出液孔12靠近所述微型发光二极管210。本实施例中，所述移动头靠近所述微型发光二极管210时，所述转移头的出液孔12与所述第一基板220上的微型发光二极管210的距离为1μm-3μm。可以理解的是，当需要同时转移多个所述微型发光二极管210时，可以设置多个所述转移头，通过多个所述转移头同时转移多个所述发光二极管210。本实施例中，此时所述电磁装置30的电磁铁或电磁线圈处于通电状态，使得此时的所述磁流变液20为固态，从而不会从所述出液孔12处流出。本发明另一实施例中，所述转移头的外壳10上设有一控制开关，所述电磁铁或电磁线圈可以处于断电状态，通过关闭所述控制开关防止所述磁流变液从所述出液孔12处流出。\n\n[0035]步骤202、请参阅图4，使所述磁流变液20从所述出液孔12流出并包覆所述微型发光二极管210。\n\n[0036]控制所述电磁装置30的电磁铁或电磁线圈处于断电状态，使所述所述磁流变液20变为液体状态，使得所述磁流变液20自然从所述出液孔12流出并包覆所述微型发光二极管210。本发明另一实施例中，直接打开所述控制开关以使所述磁流变液从所述出液孔12处流出。所述磁流变液20只需部分包覆所述微型发光二极管210，从而在保证所述微型发光二极管210与连接头的连接强度的同时，尽量减少所述磁流变液20的使用。\n\n[0037]步骤203、控制所述电磁装置30产生磁场，使所述磁流变液20由液态变为固态，所述微型发光二极管210与所述转移头通过所述磁流变液20进行粘连。\n\n[0038]通过所述控制单元给所述电磁装置30进行通电，使得所述电磁装置30产生磁场并控制通入所述电量的大小控制所述电磁装置30产生磁场的强弱，所述磁流变液20受所述磁场的影响从液态变为固态，即所述微型发光二极管210与转移头通过固态的所述磁流变液进行连接，使得所述微型发光二极管210与转移头通过固态的所述磁流变液实现物理连接，进而使得所述微型发光二极管210与所述转移头之间的作用力增加，防止所述微型发光二极管210转移过程中的损坏，降低所述微型发光二极管210的转移难度。\n\n[0039]步骤204、请参阅图5，移动所述微型发光二极管210至第二基板230。\n\n[0040]通过所述移动部带动固定有所述微型发光二极管210的转移头至所述第二基板230位置，进而通过所述转移头的移动带动所述微型发光二极管210的移动。并使所述转移头在竖直方向进行移动，使所述微型发光二极管210移动至所述第二基板220上。\n\n[0041]步骤205、请参阅图6，消除所述电磁装置30产生的磁场，所述磁流变液20由固态变为液态，使所述微型发光二极管210与所述转移头分离。\n\n[0042]通过所述控制单元给所述电磁装置30进行断电或者降低通入所述电磁装置30的电量，消除或减小所述电磁装置30产生的磁场，从而使得所述磁流变液20从固态变为液态，进而使所述微型发光二极管210与所述转移头分离，所述微型发光二极管210转移至所述第二基板230上。\n\n[0043]本发明中，在所述微型发光二极管210的转移过程时，所述微型发光二极管210与转移头之间通过所述磁流变液20进行物理连接，增加所述微型发光二极管210与所述转移头之间的作用力，进而防止所述微型发光二极管210转移过程中的损坏，从而降低转移难度。并且，通过简单的电磁装置控制所述微型发光二极管210与所述转移头的连接与分离，能够简化所述微型发光二极管210的转移操作，提高所述微型发光二极管210的转移效率。\n\n[0044]以上所述为本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也视为本发明的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10607, 23661, '技术领域\n\n[0001]本发明涉及显示技术领域，特别涉及一种柔性显示面板及柔性显示面板的制作方法。\n\n背景技术\n\n[0002]相对于传统的平板液晶显示，柔性显示采用可弯曲的柔性基板来取代厚而坚硬的玻璃基板。柔性显示，即在柔性材料制作的基板表面制作器件。以柔性有源矩阵有机发光二极体(AMLOED)为例，其制作过程通常是在硬质基板表面先制备或吸附柔性基板，继而进行器件制备，最后再将柔性基板从硬质基板上剥离。\n\n[0003]一般的，此柔性基板的剥离方式是采用激光烧蚀的方式进行的，即在聚合物柔性基板和硬质玻璃基底的界面施加高强度的激光，通过界面层的聚合物吸收激光的大量能量后烧蚀界面层，实现柔性基板与玻璃基底的剥离。虽然这种方式可以实现量产，但是激光的高能量可能引起柔性膜及器件的损坏。\n\n发明内容\n\n[0004]本发明的目的在于提供一种柔性显示面板及柔性显示面板的制作方法，达到了不会损伤柔性基板，提高了柔性显示面板的生产良率的技术效果。\n\n[0005]本发明提供了一种柔性显示面板的制作方法，包括：\n\n[0006]在玻璃基底的第一表面上形成剥离层；\n\n[0007]在所述剥离层表面以及位于所述剥离层两侧的所述玻璃基底的第一表面上形成覆盖所述剥离层的柔性基板；\n\n[0008]在所述柔性基板上依次形成器件层及封装层；\n\n[0009]沿着所述剥离层相对两侧侧面所在的平面切割依次层叠设置的所述玻璃基底、所述柔性基板、所述器件层以及所述封装层以形成柔性显示面板基体；\n\n[0010]去除所述剥离层以使所述玻璃基底与所述柔性基板分离以形成所述柔性显示面板。\n\n[0011]其中，所述去除所述剥离层以使所述玻璃基底与所述柔性基板分离以形成所述柔性显示面板的步骤包括：\n\n[0012]对切割后的所述玻璃基底的与所述第一表面相对的第二表面进行曝光，以使所述剥离层发生分解；\n\n[0013]将粘结有所述剥离层的所述柔性显示面板基体置于显影液中，以使所述柔性基板因所述剥离层发生溶解与所述玻璃基底分离。\n\n[0014]其中，所述去除所述剥离层以使所述玻璃基底与所述柔性基板分离以形成所述柔性显示面板的步骤包括：将磁铁置于切割后的所述玻璃基底的与所述第一表面相对的第二表面，以使所述剥离层吸附于所述玻璃基底的所述第一表面，进而使所述玻璃基底与所述柔性基板分离。\n\n[0015]其中，所述剥离层的材料包括正性光刻胶，所述正性光刻胶为感光树脂、增感剂和溶剂组成的对光敏感的混合溶液。\n\n[0016]其中，所述剥离层的材料包括磁性材料，所述磁性材料为磁性四氧化三铁。\n\n[0017]其中，所述磁性四氧化三铁通过共沉淀法、溶胶－凝胶法、微乳液法以及水热法的一种合成。\n\n[0018]其中，在玻璃基底的第一表面上形成剥离层的步骤包括：对所述玻璃基底进行预处理，清除所述玻璃基底上的杂质及有机物，以及在玻璃基底的第一表面上形成剥离层。\n\n[0019]其中，所述器件层的器件包括薄膜晶体管以及有机发光二极管。\n\n[0020]其中，对切割后所述玻璃基底的与所述第一表面相对的第二表面进行曝光，以使所述剥离层发生分解的步骤包括：利用紫外光对所述玻璃基底的所述第二表面进行曝光。\n\n[0021]本发明提供一种柔性显示面板，由上述柔性显示面板的制作方法制作而成。\n\n[0022]综上所述，本发明柔性显示面板的制作方法，可使柔性基板容易与玻璃基底分离，不会损伤柔性基板，提高了柔性显示面板的生产良率。\n\n附图说明\n\n[0023]为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0024]图1是本发明实施例一提供的的柔性显示面板的制作方法流程示意图。\n\n[0025]图2是图1中的柔性显示面板制作方法的形成剥离层的示意图。\n\n[0026]图3是图1中的柔性显示面板制作方法的形成柔性基板的示意图。\n\n[0027]图4是图1中的柔性显示面板制作方法的形成器件层及封装层的示意图。\n\n[0028]图5是图1中的柔性显示面板制作方法的形成柔性显示面板基体的示意图。\n\n[0029]图6是图1中的柔性显示面板制作方法的对玻璃基底第二表面曝光的示意图。\n\n[0030]图7是图1中的柔性显示面板制作方法的将粘结有玻璃基底的柔性显示面板置于显影液的示意图。\n\n[0031]图8是本发明实施例一提供的柔性显示面板的结构示意图，其中包括了玻璃基底。\n\n[0032]图9是本发明实施例二提供的的柔性显示面板的制作方法流程示意图。\n\n[0033]图10是图9中的柔性显示面板制作方法将磁铁置于玻璃基底第二表面的示意图。\n\n[0034]图11是本发明实施例二提供的柔性基板的结构示意图，其中包括了玻璃基底。\n\n具体实施方式\n\n[0035]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0036]请参阅图1，本发明的第一实施例中，本发明提供了一种柔性显示面板的制作方法，包括：\n\n[0037]步骤1，如图2所示，在玻璃基底10的第一表面101均匀地涂覆光刻胶，以形成剥离层20。在本步骤中，需对所述玻璃基底10进行预处理，清除所述玻璃基底10上的杂质及有机物，进而方便所述光刻胶的涂布。所述光刻胶为正性光刻胶，所述正性光刻胶为感光树脂、增感剂和溶剂组成的对光敏感的混合溶液。\n\n[0038]步骤2，如图3所示，在所述剥离层20表面以及位于所述剥离层20两侧的所述玻璃基底10的所述第一表面101涂覆高分子材料，以形成覆盖所述剥离层20的柔性基板30。在本步骤中，所述剥离层20干燥后在所述剥离层20表面以及位于所述剥离层20两侧的所述玻璃基底10的所述第一表面101涂覆高分子材料。在所述剥离层20两侧的所述玻璃基底10所述第一表面101涂覆高分子材料，实现了增大所述柔性基板30与所述玻璃基底10的贴合强度，以使所述柔性基板30不会翘起，且为了确保所述剥离层20不再受后续制程的影响。所述高分子材料包括聚酰亚胺，只要能达到本发明的目的，本发明在此不做限定。\n\n[0039]步骤3，如图4所示，在所述柔性基板30上依次形成器件层40及封装层50。在本步骤中，所述柔性基板30进行烘烤干燥后在所述柔性基板30上依次形成器件层40及封装层50。所述器件层40的器件包括薄膜晶体管以及有机发光二极管。具体为，将所述器件层40层叠于烘烤干燥后的所述柔性基板30上，所述封装层50封装所述器件层40。\n\n[0040]步骤4，如图5所示，沿着所述剥离层20相对两侧侧面所在的平面切割依次层叠设置的所述玻璃基底10、所述柔性基板30、所述器件层40以及所述封装层50以形成柔性显示面板基体。具体为，所述剥离层20相对两侧侧面与所述柔性基板30接触的平面形成预切平面，借助外接工具切割依次层叠设置的所述玻璃基底10、所述柔性基板30、所述器件层40以及所述封装层50。切割完成后，所述柔性基板30与所述玻璃基底10完全不接触，进而方便后续所述玻璃基底10与所述柔性基板30的分离。\n\n[0041]步骤5，如图6所示，对切割后的所述玻璃基底10的与所述第一表面101相对的第二表面102进行曝光，以使所述剥离层20发生分解。具体为，利用紫外光对所述玻璃基底10的所述第二表面102进行曝光，所述紫外光首先到达玻璃基底10的所述第二表面102，由于玻璃基底10可供所述紫外光穿过，进而所述紫外光照射至层叠于所述玻璃基底10上的剥离层20，所述剥离层20的光刻胶由于被所述紫外光照射而发生分解。\n\n[0042]步骤6，如图7、图8所示，将粘结有所述玻璃基底10的所述柔性显示面板置于显影液60中，以使所述柔性基板30因所述剥离层20发生溶解与所述玻璃基底10分离。具体为，在上述制程完成后，将粘结有所述玻璃基底10的所述柔性显示面板置于显影液60中，由于剥离层20已经发生分解，在所述显影液60的作用下，所述剥离层20的光刻胶发生溶解，进而所述柔性基板30可以实现与所述玻璃基底10的自动分离。\n\n[0043]通过上述柔性显示面板的制作方法，可使所述柔性基板30容易与所述玻璃基底10分离，简化了生产工艺，且该方法剥离速度较快，有利于高效生产。该方法的所述紫外光曝光所述剥离层20使所述剥离层20发生分解以及通过所述显影液60使所述剥离层20发生溶解，不会损伤所述柔性基板30，避免了激光剥离所述柔性基板30时，激光烧蚀过程中产生的大量热对所述柔性基板30的损伤，提高了柔性显示器的生产良率。\n\n[0044]请参阅图9，本发明的第二实施例中，本发明提供了另一种显示面板的制作方法，包括：\n\n[0045]步骤1，如图2所示，在玻璃基底10的第一表面101均匀涂覆四氧化三铁纳米粒子，以形成剥离层20。在本步骤中，需对所述玻璃基底10进行预处理，清除所述玻璃基底10上的杂质及有机物，进而方便所述四氧化三铁纳米粒子的涂布。所述四氧化三铁纳米粒子由共沉淀法、溶胶-凝胶法、微乳液法以及水热法的一种合成。在合成过程中，将所述四氧化三铁纳米粒子分散在溶剂中，所述四氧化三铁纳米粒子的平均尺寸达到10-100nm。\n\n[0046]步骤2，如图3所示，在所述剥离层20表面以及位于所述剥离层20两侧的所述玻璃基底10的所述第一表面101上形成覆盖所述剥离层20的柔性基板30。在本步骤中，所述剥离层20干燥后在所述剥离层20表面以及位于所述剥离层20两侧的所述玻璃基底10的所述第一表面101上形成覆盖所述剥离层20的柔性基板30。在所述剥离层20两侧的所述玻璃基底10所述第一表面101上形成所述柔性基板30，实现了增大所述柔性基板30与所述玻璃基底10的贴合强度，以使所述柔性基板30不会翘起，且为了确保所述剥离层20不再受后续制程的影响。所述柔性基板30的材料包括聚酰亚胺，且所述柔性基板30可以为叠层结构，只要能达到本发明的目的，本发明在此不做限定。\n\n[0047]步骤3，如图4所示，在所述柔性基板30上依次形成器件层40及封装层50。在本步骤中，所述柔性基板30进行烘烤干燥后在所述柔性基板30上依次形成器件层40及封装层50。所述器件层40的器件包括薄膜晶体管以及有机发光二极管。具体为，将所述器件层40层叠于烘烤干燥后的所述柔性基板30上，所述封装层50封装所述器件层40。\n\n[0048]步骤4，如图5所示，沿着所述剥离层20相对两侧侧面所在的平面切割依次层叠设置的所述玻璃基底10、所述柔性基板30、所述器件层40以及所述封装层50以形成柔性显示面板基体。具体为，所述剥离层20相对两侧侧面与所述柔性基板30接触的平面形成预切平面，借助外接工具切割依次层叠设置的所述玻璃基底10、所述柔性基板30、所述器件层40以及所述封装层50以形成柔性显示面板基体。切割完成后，所述柔性基板30与所述玻璃基底10完全不接触，进而方便后续所述玻璃基底10与所述柔性基板30的分离。\n\n[0049]步骤5，如图10、图11所示，将磁铁70置于切割后的所述玻璃基底10的与所述第一表面101相对的第二表面102，以使所述剥离层20吸附于所述玻璃基底10的所述第一表面101，进而使所述玻璃基底10与所述柔性基板30分离。具体为，将磁铁70置于切割后的所述玻璃基底10的与所述第一表面101相对的第二表面102，由于磁性四氧化三铁受到磁铁70的吸引，所述四氧化三铁吸附于所述玻璃基底10的所述第一表面101，进而所述玻璃基底10与所述柔性基板30发生分离。\n\n[0050]通过上述柔性显示面板的制作方法，可使所述柔性基板30容易与所述玻璃基底10分离，简化了生产工艺，且该方法剥离速度较快，有利于高效生产。该方法的所述四氧化三铁剥离层20，在所述磁铁70的作用下，聚集在所述玻璃基底10的所述第一表面101，远离所述柔性基板30，从而使得所述柔性基板30从所述玻璃基底10上剥离。该方法不会损伤所述柔性基板30，避免了激光剥离所述柔性基板30时，激光烧蚀过程中产生的大量热量对所述柔性基板30的损伤，提高了柔性显示器的生产良率。\n\n[0051]上述制程结束后，将所述磁铁70移开，将粘贴有所述四氧化三铁剥离层20的所述玻璃基底10置于溶解液中，所述四氧化三铁溶解于所述溶解液中，实现了所述四氧化三铁的重复利用，降低了生产成本。\n\n[0052]本发明提供了一种柔性显示面板，所述柔性显示面板由上述柔性显示器面板的制作方法制作而成。\n\n[0053]以上所揭露的仅为本发明较佳实施例而已，当然不能以此来限定本发明之权利范围，本领域普通技术人员可以理解实现上述实施例的全部或部分流程，并依本发明权利要求所作的等同变化，仍属于发明所涵盖的范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，特别涉及一种柔性显示面板及柔性显示面板的制作方法。\n\n背景技术\n\n[0002]相对于传统的平板液晶显示，柔性显示采用可弯曲的柔性基板来取代厚而坚硬的玻璃基板。柔性显示，即在柔性材料制作的基板表面制作器件。以柔性有源矩阵有机发光二极体(AMLOED)为例，其制作过程通常是在硬质基板表面先制备或吸附柔性基板，继而进行器件制备，最后再将柔性基板从硬质基板上剥离。\n\n[0003]一般的，此柔性基板的剥离方式是采用激光烧蚀的方式进行的，即在聚合物柔性基板和硬质玻璃基底的界面施加高强度的激光，通过界面层的聚合物吸收激光的大量能量后烧蚀界面层，实现柔性基板与玻璃基底的剥离。虽然这种方式可以实现量产，但是激光的高能量可能引起柔性膜及器件的损坏。\n\n发明内容\n\n[0004]本发明的目的在于提供一种柔性显示面板及柔性显示面板的制作方法，达到了不会损伤柔性基板，提高了柔性显示面板的生产良率的技术效果。\n\n[0005]本发明提供了一种柔性显示面板的制作方法，包括：\n\n[0006]在玻璃基底的第一表面上形成剥离层；\n\n[0007]在所述剥离层表面以及位于所述剥离层两侧的所述玻璃基底的第一表面上形成覆盖所述剥离层的柔性基板；\n\n[0008]在所述柔性基板上依次形成器件层及封装层；\n\n[0009]沿着所述剥离层相对两侧侧面所在的平面切割依次层叠设置的所述玻璃基底、所述柔性基板、所述器件层以及所述封装层以形成柔性显示面板基体；\n\n[0010]去除所述剥离层以使所述玻璃基底与所述柔性基板分离以形成所述柔性显示面板。\n\n[0011]其中，所述去除所述剥离层以使所述玻璃基底与所述柔性基板分离以形成所述柔性显示面板的步骤包括：\n\n[0012]对切割后的所述玻璃基底的与所述第一表面相对的第二表面进行曝光，以使所述剥离层发生分解；\n\n[0013]将粘结有所述剥离层的所述柔性显示面板基体置于显影液中，以使所述柔性基板因所述剥离层发生溶解与所述玻璃基底分离。\n\n[0014]其中，所述去除所述剥离层以使所述玻璃基底与所述柔性基板分离以形成所述柔性显示面板的步骤包括：将磁铁置于切割后的所述玻璃基底的与所述第一表面相对的第二表面，以使所述剥离层吸附于所述玻璃基底的所述第一表面，进而使所述玻璃基底与所述柔性基板分离。\n\n[0015]其中，所述剥离层的材料包括正性光刻胶，所述正性光刻胶为感光树脂、增感剂和溶剂组成的对光敏感的混合溶液。\n\n[0016]其中，所述剥离层的材料包括磁性材料，所述磁性材料为磁性四氧化三铁。\n\n[0017]其中，所述磁性四氧化三铁通过共沉淀法、溶胶－凝胶法、微乳液法以及水热法的一种合成。\n\n[0018]其中，在玻璃基底的第一表面上形成剥离层的步骤包括：对所述玻璃基底进行预处理，清除所述玻璃基底上的杂质及有机物，以及在玻璃基底的第一表面上形成剥离层。\n\n[0019]其中，所述器件层的器件包括薄膜晶体管以及有机发光二极管。\n\n[0020]其中，对切割后所述玻璃基底的与所述第一表面相对的第二表面进行曝光，以使所述剥离层发生分解的步骤包括：利用紫外光对所述玻璃基底的所述第二表面进行曝光。\n\n[0021]本发明提供一种柔性显示面板，由上述柔性显示面板的制作方法制作而成。\n\n[0022]综上所述，本发明柔性显示面板的制作方法，可使柔性基板容易与玻璃基底分离，不会损伤柔性基板，提高了柔性显示面板的生产良率。\n\n附图说明\n\n[0023]为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0024]图1是本发明实施例一提供的的柔性显示面板的制作方法流程示意图。\n\n[0025]图2是图1中的柔性显示面板制作方法的形成剥离层的示意图。\n\n[0026]图3是图1中的柔性显示面板制作方法的形成柔性基板的示意图。\n\n[0027]图4是图1中的柔性显示面板制作方法的形成器件层及封装层的示意图。\n\n[0028]图5是图1中的柔性显示面板制作方法的形成柔性显示面板基体的示意图。\n\n[0029]图6是图1中的柔性显示面板制作方法的对玻璃基底第二表面曝光的示意图。\n\n[0030]图7是图1中的柔性显示面板制作方法的将粘结有玻璃基底的柔性显示面板置于显影液的示意图。\n\n[0031]图8是本发明实施例一提供的柔性显示面板的结构示意图，其中包括了玻璃基底。\n\n[0032]图9是本发明实施例二提供的的柔性显示面板的制作方法流程示意图。\n\n[0033]图10是图9中的柔性显示面板制作方法将磁铁置于玻璃基底第二表面的示意图。\n\n[0034]图11是本发明实施例二提供的柔性基板的结构示意图，其中包括了玻璃基底。\n\n具体实施方式\n\n[0035]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0036]请参阅图1，本发明的第一实施例中，本发明提供了一种柔性显示面板的制作方法，包括：\n\n[0037]步骤1，如图2所示，在玻璃基底10的第一表面101均匀地涂覆光刻胶，以形成剥离层20。在本步骤中，需对所述玻璃基底10进行预处理，清除所述玻璃基底10上的杂质及有机物，进而方便所述光刻胶的涂布。所述光刻胶为正性光刻胶，所述正性光刻胶为感光树脂、增感剂和溶剂组成的对光敏感的混合溶液。\n\n[0038]步骤2，如图3所示，在所述剥离层20表面以及位于所述剥离层20两侧的所述玻璃基底10的所述第一表面101涂覆高分子材料，以形成覆盖所述剥离层20的柔性基板30。在本步骤中，所述剥离层20干燥后在所述剥离层20表面以及位于所述剥离层20两侧的所述玻璃基底10的所述第一表面101涂覆高分子材料。在所述剥离层20两侧的所述玻璃基底10所述第一表面101涂覆高分子材料，实现了增大所述柔性基板30与所述玻璃基底10的贴合强度，以使所述柔性基板30不会翘起，且为了确保所述剥离层20不再受后续制程的影响。所述高分子材料包括聚酰亚胺，只要能达到本发明的目的，本发明在此不做限定。\n\n[0039]步骤3，如图4所示，在所述柔性基板30上依次形成器件层40及封装层50。在本步骤中，所述柔性基板30进行烘烤干燥后在所述柔性基板30上依次形成器件层40及封装层50。所述器件层40的器件包括薄膜晶体管以及有机发光二极管。具体为，将所述器件层40层叠于烘烤干燥后的所述柔性基板30上，所述封装层50封装所述器件层40。\n\n[0040]步骤4，如图5所示，沿着所述剥离层20相对两侧侧面所在的平面切割依次层叠设置的所述玻璃基底10、所述柔性基板30、所述器件层40以及所述封装层50以形成柔性显示面板基体。具体为，所述剥离层20相对两侧侧面与所述柔性基板30接触的平面形成预切平面，借助外接工具切割依次层叠设置的所述玻璃基底10、所述柔性基板30、所述器件层40以及所述封装层50。切割完成后，所述柔性基板30与所述玻璃基底10完全不接触，进而方便后续所述玻璃基底10与所述柔性基板30的分离。\n\n[0041]步骤5，如图6所示，对切割后的所述玻璃基底10的与所述第一表面101相对的第二表面102进行曝光，以使所述剥离层20发生分解。具体为，利用紫外光对所述玻璃基底10的所述第二表面102进行曝光，所述紫外光首先到达玻璃基底10的所述第二表面102，由于玻璃基底10可供所述紫外光穿过，进而所述紫外光照射至层叠于所述玻璃基底10上的剥离层20，所述剥离层20的光刻胶由于被所述紫外光照射而发生分解。\n\n[0042]步骤6，如图7、图8所示，将粘结有所述玻璃基底10的所述柔性显示面板置于显影液60中，以使所述柔性基板30因所述剥离层20发生溶解与所述玻璃基底10分离。具体为，在上述制程完成后，将粘结有所述玻璃基底10的所述柔性显示面板置于显影液60中，由于剥离层20已经发生分解，在所述显影液60的作用下，所述剥离层20的光刻胶发生溶解，进而所述柔性基板30可以实现与所述玻璃基底10的自动分离。\n\n[0043]通过上述柔性显示面板的制作方法，可使所述柔性基板30容易与所述玻璃基底10分离，简化了生产工艺，且该方法剥离速度较快，有利于高效生产。该方法的所述紫外光曝光所述剥离层20使所述剥离层20发生分解以及通过所述显影液60使所述剥离层20发生溶解，不会损伤所述柔性基板30，避免了激光剥离所述柔性基板30时，激光烧蚀过程中产生的大量热对所述柔性基板30的损伤，提高了柔性显示器的生产良率。\n\n[0044]请参阅图9，本发明的第二实施例中，本发明提供了另一种显示面板的制作方法，包括：\n\n[0045]步骤1，如图2所示，在玻璃基底10的第一表面101均匀涂覆四氧化三铁纳米粒子，以形成剥离层20。在本步骤中，需对所述玻璃基底10进行预处理，清除所述玻璃基底10上的杂质及有机物，进而方便所述四氧化三铁纳米粒子的涂布。所述四氧化三铁纳米粒子由共沉淀法、溶胶-凝胶法、微乳液法以及水热法的一种合成。在合成过程中，将所述四氧化三铁纳米粒子分散在溶剂中，所述四氧化三铁纳米粒子的平均尺寸达到10-100nm。\n\n[0046]步骤2，如图3所示，在所述剥离层20表面以及位于所述剥离层20两侧的所述玻璃基底10的所述第一表面101上形成覆盖所述剥离层20的柔性基板30。在本步骤中，所述剥离层20干燥后在所述剥离层20表面以及位于所述剥离层20两侧的所述玻璃基底10的所述第一表面101上形成覆盖所述剥离层20的柔性基板30。在所述剥离层20两侧的所述玻璃基底10所述第一表面101上形成所述柔性基板30，实现了增大所述柔性基板30与所述玻璃基底10的贴合强度，以使所述柔性基板30不会翘起，且为了确保所述剥离层20不再受后续制程的影响。所述柔性基板30的材料包括聚酰亚胺，且所述柔性基板30可以为叠层结构，只要能达到本发明的目的，本发明在此不做限定。\n\n[0047]步骤3，如图4所示，在所述柔性基板30上依次形成器件层40及封装层50。在本步骤中，所述柔性基板30进行烘烤干燥后在所述柔性基板30上依次形成器件层40及封装层50。所述器件层40的器件包括薄膜晶体管以及有机发光二极管。具体为，将所述器件层40层叠于烘烤干燥后的所述柔性基板30上，所述封装层50封装所述器件层40。\n\n[0048]步骤4，如图5所示，沿着所述剥离层20相对两侧侧面所在的平面切割依次层叠设置的所述玻璃基底10、所述柔性基板30、所述器件层40以及所述封装层50以形成柔性显示面板基体。具体为，所述剥离层20相对两侧侧面与所述柔性基板30接触的平面形成预切平面，借助外接工具切割依次层叠设置的所述玻璃基底10、所述柔性基板30、所述器件层40以及所述封装层50以形成柔性显示面板基体。切割完成后，所述柔性基板30与所述玻璃基底10完全不接触，进而方便后续所述玻璃基底10与所述柔性基板30的分离。\n\n[0049]步骤5，如图10、图11所示，将磁铁70置于切割后的所述玻璃基底10的与所述第一表面101相对的第二表面102，以使所述剥离层20吸附于所述玻璃基底10的所述第一表面101，进而使所述玻璃基底10与所述柔性基板30分离。具体为，将磁铁70置于切割后的所述玻璃基底10的与所述第一表面101相对的第二表面102，由于磁性四氧化三铁受到磁铁70的吸引，所述四氧化三铁吸附于所述玻璃基底10的所述第一表面101，进而所述玻璃基底10与所述柔性基板30发生分离。\n\n[0050]通过上述柔性显示面板的制作方法，可使所述柔性基板30容易与所述玻璃基底10分离，简化了生产工艺，且该方法剥离速度较快，有利于高效生产。该方法的所述四氧化三铁剥离层20，在所述磁铁70的作用下，聚集在所述玻璃基底10的所述第一表面101，远离所述柔性基板30，从而使得所述柔性基板30从所述玻璃基底10上剥离。该方法不会损伤所述柔性基板30，避免了激光剥离所述柔性基板30时，激光烧蚀过程中产生的大量热量对所述柔性基板30的损伤，提高了柔性显示器的生产良率。\n\n[0051]上述制程结束后，将所述磁铁70移开，将粘贴有所述四氧化三铁剥离层20的所述玻璃基底10置于溶解液中，所述四氧化三铁溶解于所述溶解液中，实现了所述四氧化三铁的重复利用，降低了生产成本。\n\n[0052]本发明提供了一种柔性显示面板，所述柔性显示面板由上述柔性显示器面板的制作方法制作而成。\n\n[0053]以上所揭露的仅为本发明较佳实施例而已，当然不能以此来限定本发明之权利范围，本领域普通技术人员可以理解实现上述实施例的全部或部分流程，并依本发明权利要求所作的等同变化，仍属于发明所涵盖的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10608, 23662, '技术领域\n\n[0001]本发明涉及微型有机发光显示装置，尤其涉及微型有机发光二极管的显示面板以及制作方法。\n\n背景技术\n\n[0002]随着有机发光二极管(Organic Light-Emitting Diode,OLED)技术持续发展，在照明和显示应用中越来越多地发现了基于半导体的LED。例如，在大面积室外显示器、室内和室外照明中存在基于半导体的LED。微型有机发光二极管(Micro Organic Light-Emitting Diode,Micro-LED)在近年也开始逐渐应用到消费性电子领域，例如智能手表等。\n\n[0003]但是，随着用户对显示装置图像显示效果要求的提高，也即是显示装置中显示面板的分辨率的提高产生了较大的需求，导致显示面板用于提供扫描信号与图像信号的数据线急剧增加，进而增加了显示面板布线难度。\n\n发明内容\n\n[0004]为解决显示布线较为困难的问题，本发明提供一种布线较为容易的显示面板。\n\n[0005]进一步，提供前述显示面板的制作方法。\n\n[0006]一种显示面板，显示区内设有多个呈矩阵排列的像素单元，其中，每个像素单元包括多个不同颜色的子像素单元，显示面板在对应显示区中包括至少一个设置于相邻两行所述像素单元之间的驱动电路，所述驱动电路包括多个子驱动电路，每个所述子像素至少通过一条信号导线与所述子驱动电路连接，所述子驱动电路所述通过所述信号导线传输图像驱动信号至所述子像素单元，用于驱动所述子像素单元进行图像显示。\n\n[0007]一种显示面板的制作方法，\n\n[0008]提供基板；\n\n[0009]在所述基板一侧设置驱动电路；\n\n[0010]于所述电路表面形成第一绝缘层，所述第一绝缘层覆盖所述驱动电路；\n\n[0011]图案化所述第一绝缘层，形成通孔，部分所述驱动电路自所述通孔显露出；\n\n[0012]在所述第一绝缘层表面形成信号导线，所述信号导线通过所述通孔与所述驱动电路电性连接；以及\n\n[0013]于所述信号导线表面设置像素单元，所述像素单元与所述信号导线电性连接；\n\n[0014]其中，每个所述像素单元包括多个不同颜色的子像素单元，所述驱动电路包括多个子驱动电路，每个子像素至少通过一条信号导线与所述子驱动电路连接，所述子驱动电路所述通过所述信号导线传输图像驱动信号至所述子像素单元，用于驱动所述子像素单元进行图像显示。\n\n[0015]相较于现有技术，由于显示面板中用作图像显示的像素单元仅采用一种信号导线与驱动电路电性连接，即可完成开关信号与图形驱动信号的接收，从而进行图像显示，从而较大程度减少了像素单元布线难度，并且为像素单元提供更多的布局空间，提高显示面板的分辨率。\n\n附图说明\n\n[0016]为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0017]图1为本发明一实施例中显示面板的平面结构示意图。\n\n[0018]图2为如图1所示部分驱动电路与像素单元的放大结构示意图。\n\n[0019]图3为如图2所述一个子驱动电路侧面结构示意图。\n\n[0020]图4为图1-3所示显示面板的制作方法流程图。\n\n具体实施方式\n\n[0021]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。下面结合附图，具体说明本发明显示面板的结构及其制作的步骤。\n\n[0022]请参阅图1，其为本发明一实施例显示面板100的平面结构示意图。\n\n[0023]如图1所示，显示面板100显示区10a与非显示区10b，其中，显示区10a内包括分别沿着相互垂直的第一方向X与第二方向Y呈矩阵排列的多个像素单元101。\n\n[0024]每个像素单元101包括有三种颜色的子像素101R、101G、101B，也即是包括有红绿蓝(RGB)三种颜色的子像素101R、101G、101B。\n\n[0025]同时，在显示区10a中间位置，沿着第一方向X延伸排列的两行像素单元之间设置有驱动电路102。\n\n[0026]驱动电路102通过多条信号导线103与多个像素单元101电性连接，具体地，通过每个像素单元102中的三种颜色的子像素101R、101G、101B分别通过所述多条信号线103与驱动电路102电性连接\n\n[0027]控制电路104设置于非显示区10b，电性连接所述驱动电路102，用于输出开关信号与图像信号至驱动电路102。\n\n[0028]本实施例中，像素单元101中包括的子像素101R、101G、101B均为微型有机发光二极管(Micro LED)。\n\n[0029]具体地，请参阅图2，其为如图1所示部分驱动电路102与像素单元101的放大结构示意图。\n\n[0030]驱动电路102包括多个子驱动电路1021，所述多个子驱动电路1021沿着第一方向X依次排列设置。\n\n[0031]每一个子驱动电路1021通过一条沿着的第二方向Y延伸设置一条信号电信103与一个子像素101R、子像素101G或者子像素101B电性连接。\n\n[0032]子驱动电路1021在控制电路104输出的所述开关信号下处于开启导通状态或者关闭截至状态，当所述子驱动电路1021开启导通时，所述图像驱动信号自所述子驱动电路传输至对应的所述子像素101R、子像素101G或者子像素101B。\n\n[0033]本实施例中，用于驱动子像素101R、101G、101B的子驱动电路1021包括两个薄膜晶体管与一个电容的驱动架构，当然，可变更地，子驱动电路1021还有采用三个薄膜晶体管与一个电容的形式，并不以此为限。\n\n[0034]请参阅图3，其为如图2所述一个子驱动电路1021侧面结构示意图。\n\n[0035]如图3所示，显示面板100包括基底11、子驱动电路1021、第一绝缘层13、信号导线103以及像素单元101中的子像素101B沿着与第一方向X、第二方向Y所在平面垂直的方向依次层叠设置于所述基底11的表面，也即是子驱动电路1021、第一绝缘层13、信号导线103以及像素单元101中的子像素101B沿着基底11厚度方向依次层叠设置。其中，第一绝缘层13部分覆盖所述驱动电路，所述信号导线103沿着第二方向Y穿过所述第一绝缘层13的通孔H与子驱动电路1021电性连接。所述像素单元101中的子像素101B设置于所述信号导线103表面，并且与信号导线103电性连接。本实施例中，所述像素单元101中的蓝色子像素101B，可以理解，像素单元101中的其他子像素的连接结构类似，例如与子驱动电路1021层叠设置的红色子像素101G或者绿色子像素101G。\n\n[0036]其中，子驱动电路1021包括第一薄膜晶体管T1与第二薄膜晶体管T2，其中，第一薄膜晶体管T1作为开关晶体管，用于电性电性连接控制电路104，第二薄膜晶体管T2作为驱动晶体管，用于电性连接像素单元101中的子像素101B。需要说的是，子驱动电路1021中的电容在图3中并未示出。\n\n[0037]第一绝缘层13可以采用氮化硅(SiNx)和/或者氧化硅(SiOx)材料制成，且所述第一绝缘层13还用作平坦化层(Planarization Layer)，以便于后续信号导线103与像素单元101的设置。第一绝缘层13可以通过掩膜板与光阻的配合形成通孔H，通孔H将第一薄膜晶体管T1与第二薄膜晶体管T2对应的电性连接部分显露出，以便于设置于在绝缘层13的信号导线103与第一薄膜晶体管T1与第二薄膜晶体管T2电性连接。\n\n[0038]相较于现有技术，由于显示面板100中用作图像显示的像素单元101仅采用一种信号导线103与驱动电路102电性连接，即可完成开关信号与图形驱动信号的接收，从而进行图像显示，从而较大程度减少了像素单元101布线难度，并且为像素单元101提供更多的布局空间，提高显示面板100的分辨率，同时降低显示面板100的成本。\n\n[0039]请参阅图4，其为图1-3所示显示面板的制作方法流程图。\n\n[0040]如图4所示，显示面板的制作方法包括步骤：\n\n[0041]步骤401，提供基板11，并且针对基板11进行预处理，例如清洗(Clean)、PI(polyimide)层制作等。所述基板11材质可以为玻璃或者塑胶材质。\n\n[0042]步骤402，在所述基板11一侧的表面设置驱动电路102，也即是在基板11沿着第一方向并列设置所述多个子驱动电路1021。\n\n[0043]其中，子驱动电路1021包括第一薄膜晶体管T1与第二薄膜晶体管T2。第一薄膜晶体管T1与第二薄膜晶体管T2可以为底栅极N型薄膜晶体管，也可以为顶栅极P型薄膜晶体管。其中，第一薄膜晶体管T1作为开关晶体管，第二薄膜晶体管T2作为驱动晶体管。\n\n[0044]另外，针对设置有驱动电路102的基板11固化、清洗(Clean)等处理。\n\n[0045]步骤403，在所述驱动电路102上设置第一绝缘层13，所述第一绝缘层13覆盖所述驱动电路102。第一绝缘层13可以采用氮化硅(SiNx)和/或者氧化硅(SiOx)材料通过CVD制程形成，且所述第一绝缘层13还用作平坦化层(Planarization Layer)，便于后续其他元件的设置。\n\n[0046]步骤404，图案化所述第一绝缘层13，形成通孔H。其中，通孔H对应驱动电路102中子驱动电路1021第一薄膜晶体管T1以及第二薄膜晶体管T2漏极对应的位置。\n\n[0047]步骤405，在所述第一绝缘层13表面设置信号导线103，所述信号导线103通过所述通孔H与所述驱动电路102电性连接。具体地，信号导线103通过通孔H1分别与第一薄膜晶体管T1与第二薄膜晶体管T2的漏极电性连接。当然，第一薄膜晶体管T1与第二薄膜晶体管T2的源极(未标示)与栅极(未标示)则与提供图像驱图像驱动信号的驱动电路102电性连接。\n\n[0048]步骤406，将像素单元101设置于所述信号导线103表面，并且所述像素单元101与所述信号导线电性连接，用于接收所述图像驱动信号。\n\n[0049]其中，需要说明的是，所述驱动电路位于显示区10a中间位置，且位于相邻两行像素单元之间。\n\n[0050]以上所述的实施方式，并不构成对该技术方案保护范围的限定。任何在上述实施方式的精神和原则之内所作的修改、等同替换和改进等，均应包含在该技术方案的保护范围之内。', '技术领域\n\n[0001]本发明涉及微型有机发光显示装置，尤其涉及微型有机发光二极管的显示面板以及制作方法。\n\n背景技术\n\n[0002]随着有机发光二极管(Organic Light-Emitting Diode,OLED)技术持续发展，在照明和显示应用中越来越多地发现了基于半导体的LED。例如，在大面积室外显示器、室内和室外照明中存在基于半导体的LED。微型有机发光二极管(Micro Organic Light-Emitting Diode,Micro-LED)在近年也开始逐渐应用到消费性电子领域，例如智能手表等。\n\n[0003]但是，随着用户对显示装置图像显示效果要求的提高，也即是显示装置中显示面板的分辨率的提高产生了较大的需求，导致显示面板用于提供扫描信号与图像信号的数据线急剧增加，进而增加了显示面板布线难度。\n\n发明内容\n\n[0004]为解决显示布线较为困难的问题，本发明提供一种布线较为容易的显示面板。\n\n[0005]进一步，提供前述显示面板的制作方法。\n\n[0006]一种显示面板，显示区内设有多个呈矩阵排列的像素单元，其中，每个像素单元包括多个不同颜色的子像素单元，显示面板在对应显示区中包括至少一个设置于相邻两行所述像素单元之间的驱动电路，所述驱动电路包括多个子驱动电路，每个所述子像素至少通过一条信号导线与所述子驱动电路连接，所述子驱动电路所述通过所述信号导线传输图像驱动信号至所述子像素单元，用于驱动所述子像素单元进行图像显示。\n\n[0007]一种显示面板的制作方法，\n\n[0008]提供基板；\n\n[0009]在所述基板一侧设置驱动电路；\n\n[0010]于所述电路表面形成第一绝缘层，所述第一绝缘层覆盖所述驱动电路；\n\n[0011]图案化所述第一绝缘层，形成通孔，部分所述驱动电路自所述通孔显露出；\n\n[0012]在所述第一绝缘层表面形成信号导线，所述信号导线通过所述通孔与所述驱动电路电性连接；以及\n\n[0013]于所述信号导线表面设置像素单元，所述像素单元与所述信号导线电性连接；\n\n[0014]其中，每个所述像素单元包括多个不同颜色的子像素单元，所述驱动电路包括多个子驱动电路，每个子像素至少通过一条信号导线与所述子驱动电路连接，所述子驱动电路所述通过所述信号导线传输图像驱动信号至所述子像素单元，用于驱动所述子像素单元进行图像显示。\n\n[0015]相较于现有技术，由于显示面板中用作图像显示的像素单元仅采用一种信号导线与驱动电路电性连接，即可完成开关信号与图形驱动信号的接收，从而进行图像显示，从而较大程度减少了像素单元布线难度，并且为像素单元提供更多的布局空间，提高显示面板的分辨率。\n\n附图说明\n\n[0016]为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0017]图1为本发明一实施例中显示面板的平面结构示意图。\n\n[0018]图2为如图1所示部分驱动电路与像素单元的放大结构示意图。\n\n[0019]图3为如图2所述一个子驱动电路侧面结构示意图。\n\n[0020]图4为图1-3所示显示面板的制作方法流程图。\n\n具体实施方式\n\n[0021]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。下面结合附图，具体说明本发明显示面板的结构及其制作的步骤。\n\n[0022]请参阅图1，其为本发明一实施例显示面板100的平面结构示意图。\n\n[0023]如图1所示，显示面板100显示区10a与非显示区10b，其中，显示区10a内包括分别沿着相互垂直的第一方向X与第二方向Y呈矩阵排列的多个像素单元101。\n\n[0024]每个像素单元101包括有三种颜色的子像素101R、101G、101B，也即是包括有红绿蓝(RGB)三种颜色的子像素101R、101G、101B。\n\n[0025]同时，在显示区10a中间位置，沿着第一方向X延伸排列的两行像素单元之间设置有驱动电路102。\n\n[0026]驱动电路102通过多条信号导线103与多个像素单元101电性连接，具体地，通过每个像素单元102中的三种颜色的子像素101R、101G、101B分别通过所述多条信号线103与驱动电路102电性连接\n\n[0027]控制电路104设置于非显示区10b，电性连接所述驱动电路102，用于输出开关信号与图像信号至驱动电路102。\n\n[0028]本实施例中，像素单元101中包括的子像素101R、101G、101B均为微型有机发光二极管(Micro LED)。\n\n[0029]具体地，请参阅图2，其为如图1所示部分驱动电路102与像素单元101的放大结构示意图。\n\n[0030]驱动电路102包括多个子驱动电路1021，所述多个子驱动电路1021沿着第一方向X依次排列设置。\n\n[0031]每一个子驱动电路1021通过一条沿着的第二方向Y延伸设置一条信号电信103与一个子像素101R、子像素101G或者子像素101B电性连接。\n\n[0032]子驱动电路1021在控制电路104输出的所述开关信号下处于开启导通状态或者关闭截至状态，当所述子驱动电路1021开启导通时，所述图像驱动信号自所述子驱动电路传输至对应的所述子像素101R、子像素101G或者子像素101B。\n\n[0033]本实施例中，用于驱动子像素101R、101G、101B的子驱动电路1021包括两个薄膜晶体管与一个电容的驱动架构，当然，可变更地，子驱动电路1021还有采用三个薄膜晶体管与一个电容的形式，并不以此为限。\n\n[0034]请参阅图3，其为如图2所述一个子驱动电路1021侧面结构示意图。\n\n[0035]如图3所示，显示面板100包括基底11、子驱动电路1021、第一绝缘层13、信号导线103以及像素单元101中的子像素101B沿着与第一方向X、第二方向Y所在平面垂直的方向依次层叠设置于所述基底11的表面，也即是子驱动电路1021、第一绝缘层13、信号导线103以及像素单元101中的子像素101B沿着基底11厚度方向依次层叠设置。其中，第一绝缘层13部分覆盖所述驱动电路，所述信号导线103沿着第二方向Y穿过所述第一绝缘层13的通孔H与子驱动电路1021电性连接。所述像素单元101中的子像素101B设置于所述信号导线103表面，并且与信号导线103电性连接。本实施例中，所述像素单元101中的蓝色子像素101B，可以理解，像素单元101中的其他子像素的连接结构类似，例如与子驱动电路1021层叠设置的红色子像素101G或者绿色子像素101G。\n\n[0036]其中，子驱动电路1021包括第一薄膜晶体管T1与第二薄膜晶体管T2，其中，第一薄膜晶体管T1作为开关晶体管，用于电性电性连接控制电路104，第二薄膜晶体管T2作为驱动晶体管，用于电性连接像素单元101中的子像素101B。需要说的是，子驱动电路1021中的电容在图3中并未示出。\n\n[0037]第一绝缘层13可以采用氮化硅(SiNx)和/或者氧化硅(SiOx)材料制成，且所述第一绝缘层13还用作平坦化层(Planarization Layer)，以便于后续信号导线103与像素单元101的设置。第一绝缘层13可以通过掩膜板与光阻的配合形成通孔H，通孔H将第一薄膜晶体管T1与第二薄膜晶体管T2对应的电性连接部分显露出，以便于设置于在绝缘层13的信号导线103与第一薄膜晶体管T1与第二薄膜晶体管T2电性连接。\n\n[0038]相较于现有技术，由于显示面板100中用作图像显示的像素单元101仅采用一种信号导线103与驱动电路102电性连接，即可完成开关信号与图形驱动信号的接收，从而进行图像显示，从而较大程度减少了像素单元101布线难度，并且为像素单元101提供更多的布局空间，提高显示面板100的分辨率，同时降低显示面板100的成本。\n\n[0039]请参阅图4，其为图1-3所示显示面板的制作方法流程图。\n\n[0040]如图4所示，显示面板的制作方法包括步骤：\n\n[0041]步骤401，提供基板11，并且针对基板11进行预处理，例如清洗(Clean)、PI(polyimide)层制作等。所述基板11材质可以为玻璃或者塑胶材质。\n\n[0042]步骤402，在所述基板11一侧的表面设置驱动电路102，也即是在基板11沿着第一方向并列设置所述多个子驱动电路1021。\n\n[0043]其中，子驱动电路1021包括第一薄膜晶体管T1与第二薄膜晶体管T2。第一薄膜晶体管T1与第二薄膜晶体管T2可以为底栅极N型薄膜晶体管，也可以为顶栅极P型薄膜晶体管。其中，第一薄膜晶体管T1作为开关晶体管，第二薄膜晶体管T2作为驱动晶体管。\n\n[0044]另外，针对设置有驱动电路102的基板11固化、清洗(Clean)等处理。\n\n[0045]步骤403，在所述驱动电路102上设置第一绝缘层13，所述第一绝缘层13覆盖所述驱动电路102。第一绝缘层13可以采用氮化硅(SiNx)和/或者氧化硅(SiOx)材料通过CVD制程形成，且所述第一绝缘层13还用作平坦化层(Planarization Layer)，便于后续其他元件的设置。\n\n[0046]步骤404，图案化所述第一绝缘层13，形成通孔H。其中，通孔H对应驱动电路102中子驱动电路1021第一薄膜晶体管T1以及第二薄膜晶体管T2漏极对应的位置。\n\n[0047]步骤405，在所述第一绝缘层13表面设置信号导线103，所述信号导线103通过所述通孔H与所述驱动电路102电性连接。具体地，信号导线103通过通孔H1分别与第一薄膜晶体管T1与第二薄膜晶体管T2的漏极电性连接。当然，第一薄膜晶体管T1与第二薄膜晶体管T2的源极(未标示)与栅极(未标示)则与提供图像驱图像驱动信号的驱动电路102电性连接。\n\n[0048]步骤406，将像素单元101设置于所述信号导线103表面，并且所述像素单元101与所述信号导线电性连接，用于接收所述图像驱动信号。\n\n[0049]其中，需要说明的是，所述驱动电路位于显示区10a中间位置，且位于相邻两行像素单元之间。\n\n[0050]以上所述的实施方式，并不构成对该技术方案保护范围的限定。任何在上述实施方式的精神和原则之内所作的修改、等同替换和改进等，均应包含在该技术方案的保护范围之内。');
INSERT INTO `os_patent_instruction_text` VALUES (10609, 23663, '技术领域\n\n[0001]本发明涉及一种显示及电子领域，具体涉及背光检测电路及具有所述背光检测电路的背光模组。\n\n背景技术\n\n[0002]目前，主流的显示技术包括液晶显示器LCD和有机电激光OLED，其中，LCD技术在成本、可靠性方面依然具有明显的优势，OLED在高色域和高对比度领域具有明显的优势，为了弥补LCD在对比度上的不足，主要采用的应对方法是动态分区背光。\n\n[0003]这种采用动态分区背光的方法，通常会在一个分区内会放置很多个mini-LED，在测试阶段，如果单一分区出现异常，替换掉该异常分区内所有的mini-LED，这样增加了制作成本，所以成本较高。\n\n发明内容\n\n[0004]本发明实施例提供了一种背光检测电路及相关产品，对异常的mini-LED组进行重工处理，节约了制作成本。\n\n[0005]第一方面，本发明实施例提供一种背光检测电路，所述电路包括：\n\n[0006]N个分区电路，其中，任意分区电路包括M组mini-LED电路，所述mini-LED电路包括L个mini-LED和开关电路，所述L个mini-LED串联或并联连接形成串联mini-LED组或并联mini-LED组，所述开关电路根据控制信号CS控制一组mini-LED的导通，其中，所述N、M和L均为正整数；\n\n[0007]在背光检测时，所述任意分区内至多只有一组mini-LED电路导通。\n\n[0008]可选的，当N≥2时，所述任意分区电路内的任意组mini-LED电路的开关电路的控制信号CS输入端互不相连，任意组mini-LED电路的开关电路的控制信号CS输入端与其它每个分区电路的任意组mini-LED电路的开关电路的控制信号CS输入端相连。\n\n[0009]可选的，所述开关电路为耗尽型TFT，所述开关电路的S极连接电压源，G极连接控制信号CS，D极连接所述串联mini-LED组或并联mini-LED组的输入端，所述mini-LED电路的输出端接地。\n\n[0010]第二方面，本发明提供一种应用于1-3任一项所述的背光检测电路的检测方法，包括：\n\n[0011]在各分区电路上加载电压源VCC信号；\n\n[0012]在各分区的开关电路加载控制信号CS；\n\n[0013]控制所述电压源VCC信号在任意时段仅在一个分区电路上为高平信号，所述控制信号CS在任意时段在任意分区内仅在一组mini-LED的开关电路上为导通信号；\n\n[0014]检测所述背光检测电路的输出电压和电流；\n\n[0015]根据所述输出电压和电流计算输出阻抗，若所述输出阻抗超出预设范围，确定该组mini-LED电路异常。\n\n[0016]第三方面，本发明实施例提供一种背光模组，所述背光模组包括：\n\n[0017]一种背光检测电路，所述背光检测电路包括N个分区电路，其中，任意分区电路包括M组mini-LED电路，所述mini-LED电路包括L个mini-LED和开关电路，所述L个mini-LED串联或并联连接形成串联mini-LED组或并联mini-LED组，所述开关电路根据控制信号CS控制一组mini-LED的导通，其中，所述N、M和L均为正整数；\n\n[0018]在背光检测时，所述任意分区内至多只有一组mini-LED电路导通。\n\n[0019]可选的，当N≥2时，所述任意分区电路的任意组mini-LED电路的开关电路的控制信号CS输入端互不相连，任意组mini-LED电路的开关电路的控制信号CS输入端与其它每个分区电路的任意组mini-LED电路的开关电路的控制信号CS输入端相连。\n\n[0020]可选的，所述背光模组的所述开关电路为耗尽型TFT，所述开关电路的S极连接电压源，G极连接控制信号CS，D极连接所述串联mini-LED组或并联mini-LED组的输入端，所述mini-LED电路的输出端接地。\n\n[0021]可选的，所述背光模组还应用权要求4所述的检测方法，包括：\n\n[0022]在各分区电路上加载电压源VCC信号；\n\n[0023]在各分区的开关电路加载控制信号CS；\n\n[0024]控制所述电压源VCC信号在任意时段仅在一个分区电路上为高平信号，所述控制信号CS在任意时段在任意分区内仅在一组mini-LED的开关电路上为导通信号；\n\n[0025]检测所述背光检测电路的输出电压和电流；\n\n[0026]根据所述输出电压和电流计算输出阻抗，若所述输出阻抗超出预设范围，确定该组mini-LED电路异常。\n\n[0027]第四方面，本发明实施例提供一种显示屏，所述显示屏包括第三方面所述的背光模组。\n\n[0028]第五方面，本发明实施例提供提供一种电子设备，所述电子设备包括第四方面所述的显示屏。\n\n[0029]实施本发明实施例，具有如下有益效果：\n\n[0030]可以看出，本发明实施例将背光分区进一步分组，逐个打开每组电路的串联mini-LED组或并联mini-LED组，并检测输出电流，根据输出电流确认含有异常mini-LED的分组电路，并替换该分组电路中的mini-LED，弥补了单一分区重工处理时面临的替换巨量mini-LED的不足，节约了制作成本。\n\n附图说明\n\n[0031]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0032]图1A是本发明公开的一种背光检测电路中的一个分区中的一组电路结构示意图；\n\n[0033]图1B是本发明公开的另一种背光检测电路中的一个分区中的一组电路结构示意图；\n\n[0034]图2是本发明公开的一种背光检测电路中的一个分区的电路结构示意图；\n\n[0035]图3是本发明公开的一种背光检测电路的结构示意图；\n\n[0036]图4是本发明实施方式中的控制电源的时序图；\n\n[0037]图5是本发明实施方式中的控制信号的时序图；\n\n[0038]图6是本发明公开的一种应用于所述背光检测电路的检测方法的流程示意图。\n\n具体实施方式\n\n[0039]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0040]本发明的说明书和权利要求书及所述附图中的术语“第一”、“第二”、“第三”和“第四”等是用于区别不同对象，而不是用于描述特定顺序。此外，术语“包括”和“具有”以及它们任何变形，意图在于覆盖不排他的包含。例如包含了一系列步骤或单元的过程、方法、系统、产品或设备没有限定于已列出的步骤或单元，而是可选地还包括没有列出的步骤或单元，或可选地还包括对于这些过程、方法、产品或设备固有的其它步骤或单元。\n\n[0041]在本文中提及“实施例”意味着，结合实施例描述的特定特征、结果或特性可以包含在本发明的至少一个实施例中。在说明书中的各个位置出现该短语并不一定均是指相同的实施例，也不是与其它实施例互斥的独立的或备选的实施例。本领域技术人员显式地和隐式地理解的是，本文所描述的实施例可以与其它实施例相结合。\n\n[0042]下面结合附图，对本发明的实施例进行描述。\n\n[0043]首先，本发明的实施例采用的方法，是在背光分区内进一步将背光检测电路进一步分组，具体的方式包括但不限于如下的方法：\n\n[0044]首先，将所述背光检测电路分成N区，任意一个分区电路包含M组mini-LED电路，其中，任意一组mini-LED电路中包含L个mini-LED和一个开关电路，所述L个mini-LED串联或并联连接形成串联mini-LED组或并联mini-LED组，可以理解的是，一个串联mini-LED组或并联mini-LED组与一个开关电路对应连接，所述开关电路为所述串联mini-LED组或并联mini-LED组提供驱动电流，其中，任意一组mini-LED电路的开关电路的S极连接电压源，G极连接控制信号CS，D极连接所述串联mini-LED组或并联mini-LED组的输入端，所述mini-LED电路的输出端接地，其中，所述N、M和L均为正整数。\n\n[0045]进一步地，任意一个分区电路的开关电路的S极连接电压源的同一个输入端，任意两个分区电路的开关电路连接电压源不同的输入端，且任意一个分区电路的任意一组mini-LED电路的开关电路的控制信号CS输入端互不相连，任意一组mini-LED电路的开关电路的控制信号CS输入端与其它每个分区电路的任意一组mini-LED电路的开关电路的控制信号CS输入端相连，连接到控制信号CS的同一个输入端。\n\n[0046]举例来说，第一个分区电路的所有开关电路的S极、第二个分区电路的所有开关电路的S极和第N个分区的所有开关电路的S极连接电压源不同的输入端口，且第一个分区电路的第一组mini-LED电路的开关电路的G极可以和第二个分区电路的任意一组mini-LED电路的开关电路的G极和第N个分区电路的任意一组mini-LED电路的开关电路的G极相连，第一个分区电路的第二组mini-LED电路的开关电路的G极可以和第二个分区电路的任意组mini-LED电路的开关电路的G极和第N个分区电路的任意组mini-LED电路的开关电路的G极相连，等等，这里不在赘诉。\n\n[0047]参阅图1A，图1A为一种背光检测电路的结构示意图。如图1A所示，图1A是在N＝1，X＝1，M＝1，L＝5时得到的示意图，图1A包含但不限于图中的五个mini-LED和一个TFT，为了方便表述，用D1、D2、D3、D4和D5表示五个mini-LED，T1表示TFT，D1、D2、D3、D4和D5连接成一个并联的mini-LED组，且该并联的mini-LED的输入端(如图1A所示的X1端口)接T1的D极，输出端(如图1A所示的X2端口)接地，T1的S极接控制电源VCC，G极接控制信号CS。\n\n[0048]参阅图1B，图1B为另一种背光检测电路的结构示意图。如图1B所示，如图1B所示，图1B是在N＝1，X＝1，M＝1，L＝5时得到的示意图，图1B包含但不限于图中的五个mini-LED和一个TFT，用D1、D2、D3、D4和D5表示五个mini-LED，T1表示TFT，D1、D2、D3、D4和D5连接成一个串联的mini-LED组，且该串联的mini-LED的输入端(如图1B所示的X1端口)接T1的D极，输出端(如图1B所示的X2端口)接地，T1的S极接控制电源VCC，G极连接控制信号CS。\n\n[0049]可选的，如图1A和图1B中所述的mini-LED，分别为蓝、绿和红三色mini-LED，所述三色mini-LED以周期形式进行排列，且所述三色mini-LED的之间混光距离小于1mm，在该混光距离下，所述三色mini-LED的强度进行均匀混合能够组成与显示面板需求相匹配的白色背光。\n\n[0050]可选的，当TFT输入的控制信号入为正压时，TFT处于打开状态，当TFT输入的控制信号入为负压时，TFT处于关闭状态。\n\n[0051]参见图2，图2为一种背光检测电路的另一种结构示意图。图2是一个分区电路的结构示意图，如图2所示，图2是在N＝1，X＝1，M＝5，L＝5时得到的示意图，图2是在图1的基础上扩展五组电路得到的，如图2所示，所述电路图包括但不限于图2中所示的五个分组电路，图2所示的电路图包括：T1、T2、T3、T4和T5五个TFT，五个分组mini-LED电路，每一组mini-LED电路都可采用如图1A或者如图1B所示的连接方式，这里我们以如图1A所示的并联连接方式为例，第一组mini-LED电路中包含由D11、D12、D13、D14和D15构成的并联的mini-LED组，该并联的mini-LED组的输入端接T1的D极，输出端接地，T1的G极接控制信号CS，S极接控制电源VCC，第二组mini-LED电路中包含由D21、D22、D23、D24和D25构成的并联的mini-LED组，该并联的mini-LED组的输入端接T2的D极，输出端接地，T2的G极连控制信号CS，S极接控制电源VCC，第三组mini-LED电路中包含由D31、D32、D33、D34和D35构成的并联的mini-LED组，该并联的mini-LED组的输入端接T3的D极，输出端接地，T3的G极接控制信号CS，S极接控制电源VCC，第四组mini-LED电路中包含由D41、D42、D43、D44和D45构成的并联的mini-LED组，该并联的mini-LED组的输入端接T4的D极，输出端接地，T4的G极接控制信号CS，S极接控制电源VCC，第五组mini-LED电路中包含由D51、D52、D53、D54和D55构成的并联的mini-LED组，该并联的mini-LED组的输入端接T5的D极，输出端接地，T5的G极接控制信号CS，S极接控制电源VCC，其中，所述T1、T2、T3、T4和T5的G极连接的控制信号CS的时序如图5所示，S极连接同一个控制电源VCC。\n\n[0052]参见图3，图3为一种背光检测电路的另一种结构示意图。如图3所示，图3是在N＝2，X＝1，M＝5，L＝5时得到的示意图，图3所述的电路可作为本发明的基础电路，更为复杂的电路可以在图3的基础上扩展更多的分区和分组得到，这里不去过度叙述，相比图1和图2为最优的实施例，但所述电路图包括但不限于图3中所示的两个分区电路，图3所示的电路图包括：两个分区电路，十个TFT，任意一个分区中有五组mini-LED电路，为了方便表述，用10表示第一个分区电路，其中，101表示第一组mini-LED电路、102表示第二组mini-LED电路、103表示第三组mini-LED电路、104第四组mini-LED电路和105表示第五组mini-LED电路，20表示第二个分区电路，201表示第一组mini-LED电路、202表示第二组mini-LED电路、203表示第三组mini-LED电路、204表示第四组mini-LED电路和205表示第五组mini-LED电路，T1、T2、T3、T4、T5、T6、T7、T8、T9和T10都表示TFT。\n\n[0053]进一步地，第一个分区电路10的连接方式如下：第一组mini-LED电路101的输入端和T1的D极连接，T1的G极接控制信号CS，S极接控制电源VCC，第二组mini-LED电路102的输入端和T2的D极连接，T2的G极接控制信号CS，S极接控制电源VCC，第三组mini-LED电路103的输入端和T3的D极连接，T3的G极接控制信号CS，S极接控制电源VCC，第四组mini-LED电路104的输入端和T4的D极连接，T4的G极接控制信号CS，S极接控制电源VCC，第五组mini-LED电路105的输入端和T5的D极连接，T5的G极接控制信号CS，S极接控制电源VCC。第二个分区电路20的连接方式如下：第一组mini-LED电路201的输入端和T6的D极连接，T6的G极接控制信号CS，S极接控制电源VCC，第二组mini-LED电路202的输入端和T7的D极连接，T7的G极接控制信号CS，S极接控制电源VCC，第三组mini-LED电路203的输入端和T8的D极连接，T8的G极接控制信号CS，S极接控制电源VCC，第四组mini-LED电路204的输入端和T9的D极连接，T9的G极接控制信号CS，S极接控制电源VCC，第五组mini-LED电路205的输入端和T10的D极连接，T10的G极接控制信号CS，S极接控制电源VCC。其中，T1和T6的G极接控制信号CS的同一个输入端口，T2和T7的G极接控制信号CS的同一个输入端口，T3和T8的G极接控制信号CS的同一个输入端口，T4和T9的G极接控制信号CS的同一个输入端口，T5和T10的G极接控制信号CS的同一个输入端口，其中，T1、T2、T3、T4和T5的S极接同一个控制电源VCC，T6、T7、T8、T9和T10的S极接同一个控制电源VCC，其中，CS的时序图如图5所示，VCC的时序图如图4所示。\n\n[0054]进一步地，图6是一种应用所述背光检测电路的检测方法的流程示意图，以图3所示的电路为例，所述检测方法包括但不限于如下步骤：\n\n[0055]步骤601：在各分区电路上加载电压源VCC信号。\n\n[0056]可选的，如图4所示，控制电压源加入电压的时序周期为t10，在不同的时刻，所示两个分区电路的TFT的S极输入不同的电压，则在0～t5内，将第一个分区的TFT的S极输入电压设置为高电平且幅值V1＝V，第二个分区的TFT的S极输入电压为V2＝2V。若所述电路有N(N＞2)个分区电路，则只需要改变控制电源的时序即可，这里不在叙述。\n\n[0057]可以理解的是，在0～t5和t5～t10加上不同的电压是为了确定在0～t5内，第二个分区电路的控制信号输入端输入的时序电压是无法开启第二个分区电路中的开关电路，同理，在t5～t10内，第一个分区电路的控制信号输入端输入的时序电压是无法开启第一个分区电路中的开关电路。\n\n[0058]步骤602：在各分区的开关电路加载控制信号CS。\n\n[0059]进一步地，如图5所示，控制信号加入的时序电压的周期为t5，可以看出在0～t1内第一组mini-LED电路的控制信号的输入端加载高电平，其余的mini-LED电路的控制信号的输入端加载低电平，在t1～t2内第二组mini-LED电路的控制信号的输入端加载高电平，其余的mini-LED电路的控制信号的输入端加载低电平，在t4～t5内第五组mini-LED电路的控制信号的输入端加载高电平，其余的mini-LED电路的控制信号的输入端加载低电平。\n\n[0060]步骤603：控制所述电压源VCC信号在任意时段仅在一个分区电路上为高平信号，所述控制信号CS在任意时段在任意分区内仅在一组mini-LED的开关电路上为导通信号。\n\n[0061]举例来说，在0～t5可将第一个分区电路的电压源的幅值设置为|UP|，第二个分区电路的电压源的幅值设置为2|UP|，另外可将控制信号的高电平的电压幅值设置为|UP|。\n\n[0062]进一步地，结合图4和图5所示的时序电路图可知，在0～t5内，第一分区电路的电压源的电压幅值为|UP|，第一分区电路的第一组、第二组、第三组、第四组和第五组mini-LED电路连接的控制信号分别在0～t1、t1～t2、t2～t3、t3～t4和t4～t5输入高电平，且高电平的幅值为|UP|，所以，在0～t1内只有第一组mini-LED电路处于打开状态，在t1～t2内，只有第二组mini-LED电路处于打开状态，在t2～t3内，只有第三组mini-LED电路处于打开状态，在t3～t4内，只有第四组mini-LED电路处于打开状态，在t4～t5内，只有第五组mini-LED电路处于打开状态，而在0～t5内，第二个分区电路的电压源输入的电压幅值为2|UP|，则在0～t5内，第二个分区电路的五组mini-LED电路均处于关闭状态，在t5～t10内，则逐个开启第二个分区电路的五组mini-LED电路，开启方式与第一个分区电路的开启方式一致，这里不在赘诉。\n\n[0063]步骤604：检测所述背光检测电路的输出电压和电流。\n\n[0064]进一步地，在输入所述电压VCC和所述控制信号CS后，所述背光检测电路将以行列扫描的形式逐次打开每个分区电路的TFT，在打开该分区的TFT之后，在逐次打开五组mini-LED电路，在打开一组mini-LED电路后检测该组的输出电压和电流。\n\n[0065]步骤605：根据所述输出电压和电流计算输出阻抗，若所述输出阻抗超出预设范围，确定该组mini-LED电路异常。\n\n[0066]检测出具有异常mini-LED的分组电路具体的实施方式可以为：在打开所述检测电路的某一分区电路的某一组的mini-LED时，检测该组的输出电压和输出电流，根据所述输出电压和输出电流计算输出阻抗。\n\n[0067]举例来说，在打开第一个分区第一组mini-LED电路时，若该组中至少有一个mini-LED断路时或者至少有一个mini-LED短路时，则根据检测到的输出电压和输出电流求计算出该组的输出阻抗，若该输出阻抗超出预设范围，则证明该组电路中存在异常的mini-LED，在重工处理时需要将该组的mini-LED全部替换掉。\n\n[0068]可以理解的是，若所述检测电路采用串联mini-LED组，则检测方法与并联mini-LED组一致，这里不在叙述。\n\n[0069]进一步地，若检测到所有分区的mini-LED全部点亮后，则控制中心不在向所述检测电路的TFT的G极和S极输入图3中所述的电压，所述控制中心根据不同的视频信号向所述检测电路输入电压，然后根据不同的视频信号，点亮所述N个分区电路中对应的mini-LED。\n\n[0070]可以看出，本发明实施例采用小尺寸mini-LED作为直下式背光源，任意分区均含有多颗mini-LED，这种排列多颗mini-LED的方式有效的减小了混光距离，满足小尺寸轻薄显示的需求，并且对任意一个背光分区的mini-LED进行进一步分组，并采用耗尽型TFT作为每一组的开关电路，为每一组mini-LED提供驱动电流，在检测时对分区内不同分组逐个打开检测，对含有异常mini-LED的分组进行重工处理，有效的减少了单一分区重工处理时面临的巨量mini-LED损失，而且，可以根据不同的视频信号，点亮对应分区的分组的mini-LED，进一步地提高了对比度，最后，同一分区采用统一电流驱动，检测电路无额外附加功耗。\n\n[0071]可选的，本发明还公开了一种背光模组，所述背光模组包括如图2所示的电路，图2是在图1的基础上扩展五组电路得到的，如图2所示，所述电路图包括但不限于图2中所示的五个分组电路，图2所示的电路图包括：T1、T2、T3、T4和T5五个TFT，五个分组mini-LED电路，每一组mini-LED电路都可采用如图1A或者如图1B所示的连接方式，这里我们以如图1A所示的并联连接方式为例，第一组mini-LED电路中包含由D11、D12、D13、D14和D15构成的并联的mini-LED组，该并联的mini-LED组的输入端接T1的D极，输出端接地，T1的G极接控制信号CS，S极接控制电源VCC，第二组mini-LED电路中包含由D21、D22、D23、D24和D25构成的并联的mini-LED组，该并联的mini-LED组的输入端接T2的D极，输出端接地，T2的G极连控制信号CS，S极接控制电源VCC，第三组mini-LED电路中包含由D31、D32、D33、D34和D35构成的并联的mini-LED组，该并联的mini-LED组的输入端接T3的D极，输出端接地，T3的G极接控制信号CS，S极接控制电源VCC，第四组\n\n[0072]mini-LED电路中包含由D41、D42、D43、D44和D45构成的并联的mini-LED组，该并联的mini-LED组的输入端接T4的D极，输出端接地，T4的G极接控制信号CS，S极接控制电源VCC，第五组mini-LED电路中包含由D51、D52、D53、D54和D55构成的并联的mini-LED组，该并联的mini-LED组的输入端接T5的D极，输出端接地，T5的G极接控制信号CS，S极接控制电源VCC，其中，所述T1、T2、T3、T4和T5的G极连接的控制信号CS的时序如图5所示，S极连接同一个控制电源VCC。\n\n[0073]可选的，所述背光模组还包括如图3所示的电路。如图3所示，图3是在N＝2，X＝1，M＝5，L＝5时得到的示意图，图3所述的电路可作为本发明的基础电路，更为复杂的电路可以在图3的基础上扩展更多的分区和分组得到，这里不去过度叙述，相比图1和图2为最优的实施例，但所述电路图包括但不限于图3中所示的两个分区电路，图3所示的电路图包括：两个分区电路，十个TFT，任意一个分区中有五组mini-LED电路，为了方便表述，用10表示第一个分区电路，其中，101表示第一组mini-LED电路、102表示第二组mini-LED电路、103表示第三组mini-LED电路、104第四组mini-LED电路和105表示第五组mini-LED电路，20表示第二个分区电路，201表示第一组mini-LED电路、202表示第二组mini-LED电路、203表示第三组mini-LED电路、204表示第四组mini-LED电路和205表示第五组mini-LED电路，T1、T2、T3、T4、T5、T6、T7、T8、T9和T10都表示TFT。\n\n[0074]进一步地，第一个分区电路10的连接方式如下：第一组mini-LED电路101的输入端和T1的D极连接，T1的G极接控制信号CS，S极接控制电源VCC，第二组mini-LED电路102的输入端和T2的D极连接，T2的G极接控制信号CS，S极接控制电源VCC，第三组mini-LED电路103的输入端和T3的D极连接，T3的G极接控制信号CS，S极接控制电源VCC，第四组mini-LED电路104的输入端和T4的D极连接，T4的G极接控制信号CS，S极接控制电源VCC，第五组mini-LED电路105的输入端和T5的D极连接，T5的G极接控制信号CS，S极接控制电源VCC。第二个分区电路20的连接方式如下：第一组mini-LED电路201的输入端和T6的D极连接，T6的G极接控制信号CS，S极接控制电源VCC，第二组mini-LED电路202的输入端和T7的D极连接，T7的G极接控制信号CS，S极接控制电源VCC，第三组mini-LED电路203的输入端和T8的D极连接，T8的G极接控制信号CS，S极接控制电源VCC，第四组mini-LED电路204的输入端和T9的D极连接，T9的G极接控制信号CS，S极接控制电源VCC，第五组mini-LED电路205的输入端和T10的D极连接，T10的G极接控制信号CS，S极接控制电源VCC。其中，T1和T6的G极接控制信号CS的同一个输入端口，T2和T7的G极接控制信号CS的同一个输入端口，T3和T8的G极接控制信号CS的同一个输入端口，T4和T9的G极接控制信号CS的同一个输入端口，T5和T10的G极接控制信号CS的同一个输入端口，其中，T1、T2、T3、T4和T5的S极接同一个控制电源VCC，T6、T7、T8、T9和T10的S极接同一个控制电源VCC，其中，CS的时序图如图5所示，VCC的时序图如图4所示。\n\n[0075]可选的，所述背光模组还用如图6所述的检测方法，包括：\n\n[0076]步骤601：在各分区电路上加载电压源VCC信号。\n\n[0077]如图4所示，控制电源加入的时序电压的周期为t10，在不同的时刻，所示两个分区电路的TFT的S极输入不同的电压，则在0～t5内，将第一个分区的TFT的S极输入电压设置为为高电平且幅值V1＝V，第二个分区的TFT的S极输入电压为V2＝2V。若所述电路有N(N＞2)个分区电路，则只需要改变控制电源的时序即可，这里不在叙述。\n\n[0078]可以理解的是，在0～t5和t5～t10加上不同的电压是为了确定在0～t5内，第二个分区电路的控制信号输入端输入的时序电压是无法开启第二个分区电路中的开关电路，同理，在t5～t10内，第一个分区电路的控制信号输入端输入的时序电压是无法开启第一个分区电路中的开关电路。\n\n[0079]步骤602：在各分区的开关电路加载控制信号CS。\n\n[0080]进一步地，如图5所示，控制信号加入的时序电压的周期为t5，可以看出在0～t1内第一组mini-LED电路的控制信号的输入端加载高电平，其余的mini-LED电路的控制信号的输入端加载低电平，在t1～t2内第二组mini-LED电路的控制信号的输入端加载高电平，其余的mini-LED电路的控制信号的输入端加载低电平，在t4～t5内第五组mini-LED电路的控制信号的输入端加载高电平，其余的mini-LED电路的控制信号的输入端加载低电平。\n\n[0081]步骤603：控制所述电压源VCC信号在任意时段仅在一个分区电路上为高平信号，所述控制信号CS在任意时段在任意分区内仅在一组mini-LED的开关电路上为导通信号。\n\n[0082]举例来说，在0～t5可将第一个分区电路的电压源的幅值设置为|UP|，第二个分区电路的电压源的幅值设置为2|UP|，另外可将控制信号的高电平的电压幅值设置为|UP|。\n\n[0083]进一步地，结合图4和图5所示的时序电路图可知，在0～t5内，第一分区电路的电压源的电压幅值为|UP|，第一分区电路的第一组、第二组、第三组、第四组和第五组mini-LED电路连接的控制信号分别在0～t1、t1～t2、t2～t3、t3～t4和t4～t5输入高电平，且高电平的幅值为|UP|，所以，在0～t1内只有第一组mini-LED电路处于打开状态，在t1～t2内，只有第二组mini-LED电路处于打开状态，在t2～t3内，只有第三组mini-LED电路处于打开状态，在t3～t4内，只有第四组mini-LED电路处于打开状态，在t4～t5内，只有第五组mini-LED电路处于打开状态，而在0～t5内，第二个分区电路的电压源输入的电压幅值为2|UP|，则在0～t5内，第二个分区电路的五组mini-LED电路均处于关闭状态，在t5～t10内，则逐个开启第二个分区电路的五组mini-LED电路，开启方式与第一个分区电路的开启方式一致，这里不在赘诉。\n\n[0084]步骤603：检测所述背光检测电路的输出电压和电流。\n\n[0085]进一步地，在输入所述电压VCC和所述控制信号CS后，所述背光检测电路将以行列扫描的形式逐次打开每个分区电路的TFT，在打开该分区的TFT之后，在逐次打开五组mini-LED电路，在打开一组mini-LED电路后检测该组的输出电压和电流。\n\n[0086]步骤604：根据所述输出电压和电流计算输出阻抗，若所述输出阻抗超出预设范围，确定该组mini-LED电路异常。\n\n[0087]检测出具有异常mini-LED的分组电路具体的实施方式可以为：在打开所述检测电路的某一分区电路的某一组的mini-LED时，检测该组的输出电压和输出电流，根据所述输出电压和输出电流计算输出阻抗。\n\n[0088]举例来说，在打开第一个分区第一组mini-LED电路时，若该组中至少有一个mini-LED断路时或者至少有一个mini-LED短路时，则计算检测到的输出电压和输出电流求出该组的阻抗，若该阻抗超出预设范围，则证明电路中存在异常的mini-LED，在重工处理时需要将该组的mini-LED全部替换掉。\n\n[0089]可选的，本发明还公布了一种显示屏，所述显示屏包括上诉背光模组。\n\n[0090]可选的，本发明还公布了一种电子设备，所述电子设备包括上诉显示屏。\n\n[0091]以上对本发明实施例进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的一般技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。', '技术领域\n\n[0001]本发明涉及一种显示及电子领域，具体涉及背光检测电路及具有所述背光检测电路的背光模组。\n\n背景技术\n\n[0002]目前，主流的显示技术包括液晶显示器LCD和有机电激光OLED，其中，LCD技术在成本、可靠性方面依然具有明显的优势，OLED在高色域和高对比度领域具有明显的优势，为了弥补LCD在对比度上的不足，主要采用的应对方法是动态分区背光。\n\n[0003]这种采用动态分区背光的方法，通常会在一个分区内会放置很多个mini-LED，在测试阶段，如果单一分区出现异常，替换掉该异常分区内所有的mini-LED，这样增加了制作成本，所以成本较高。\n\n发明内容\n\n[0004]本发明实施例提供了一种背光检测电路及相关产品，对异常的mini-LED组进行重工处理，节约了制作成本。\n\n[0005]第一方面，本发明实施例提供一种背光检测电路，所述电路包括：\n\n[0006]N个分区电路，其中，任意分区电路包括M组mini-LED电路，所述mini-LED电路包括L个mini-LED和开关电路，所述L个mini-LED串联或并联连接形成串联mini-LED组或并联mini-LED组，所述开关电路根据控制信号CS控制一组mini-LED的导通，其中，所述N、M和L均为正整数；\n\n[0007]在背光检测时，所述任意分区内至多只有一组mini-LED电路导通。\n\n[0008]可选的，当N≥2时，所述任意分区电路内的任意组mini-LED电路的开关电路的控制信号CS输入端互不相连，任意组mini-LED电路的开关电路的控制信号CS输入端与其它每个分区电路的任意组mini-LED电路的开关电路的控制信号CS输入端相连。\n\n[0009]可选的，所述开关电路为耗尽型TFT，所述开关电路的S极连接电压源，G极连接控制信号CS，D极连接所述串联mini-LED组或并联mini-LED组的输入端，所述mini-LED电路的输出端接地。\n\n[0010]第二方面，本发明提供一种应用于1-3任一项所述的背光检测电路的检测方法，包括：\n\n[0011]在各分区电路上加载电压源VCC信号；\n\n[0012]在各分区的开关电路加载控制信号CS；\n\n[0013]控制所述电压源VCC信号在任意时段仅在一个分区电路上为高平信号，所述控制信号CS在任意时段在任意分区内仅在一组mini-LED的开关电路上为导通信号；\n\n[0014]检测所述背光检测电路的输出电压和电流；\n\n[0015]根据所述输出电压和电流计算输出阻抗，若所述输出阻抗超出预设范围，确定该组mini-LED电路异常。\n\n[0016]第三方面，本发明实施例提供一种背光模组，所述背光模组包括：\n\n[0017]一种背光检测电路，所述背光检测电路包括N个分区电路，其中，任意分区电路包括M组mini-LED电路，所述mini-LED电路包括L个mini-LED和开关电路，所述L个mini-LED串联或并联连接形成串联mini-LED组或并联mini-LED组，所述开关电路根据控制信号CS控制一组mini-LED的导通，其中，所述N、M和L均为正整数；\n\n[0018]在背光检测时，所述任意分区内至多只有一组mini-LED电路导通。\n\n[0019]可选的，当N≥2时，所述任意分区电路的任意组mini-LED电路的开关电路的控制信号CS输入端互不相连，任意组mini-LED电路的开关电路的控制信号CS输入端与其它每个分区电路的任意组mini-LED电路的开关电路的控制信号CS输入端相连。\n\n[0020]可选的，所述背光模组的所述开关电路为耗尽型TFT，所述开关电路的S极连接电压源，G极连接控制信号CS，D极连接所述串联mini-LED组或并联mini-LED组的输入端，所述mini-LED电路的输出端接地。\n\n[0021]可选的，所述背光模组还应用权要求4所述的检测方法，包括：\n\n[0022]在各分区电路上加载电压源VCC信号；\n\n[0023]在各分区的开关电路加载控制信号CS；\n\n[0024]控制所述电压源VCC信号在任意时段仅在一个分区电路上为高平信号，所述控制信号CS在任意时段在任意分区内仅在一组mini-LED的开关电路上为导通信号；\n\n[0025]检测所述背光检测电路的输出电压和电流；\n\n[0026]根据所述输出电压和电流计算输出阻抗，若所述输出阻抗超出预设范围，确定该组mini-LED电路异常。\n\n[0027]第四方面，本发明实施例提供一种显示屏，所述显示屏包括第三方面所述的背光模组。\n\n[0028]第五方面，本发明实施例提供提供一种电子设备，所述电子设备包括第四方面所述的显示屏。\n\n[0029]实施本发明实施例，具有如下有益效果：\n\n[0030]可以看出，本发明实施例将背光分区进一步分组，逐个打开每组电路的串联mini-LED组或并联mini-LED组，并检测输出电流，根据输出电流确认含有异常mini-LED的分组电路，并替换该分组电路中的mini-LED，弥补了单一分区重工处理时面临的替换巨量mini-LED的不足，节约了制作成本。\n\n附图说明\n\n[0031]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0032]图1A是本发明公开的一种背光检测电路中的一个分区中的一组电路结构示意图；\n\n[0033]图1B是本发明公开的另一种背光检测电路中的一个分区中的一组电路结构示意图；\n\n[0034]图2是本发明公开的一种背光检测电路中的一个分区的电路结构示意图；\n\n[0035]图3是本发明公开的一种背光检测电路的结构示意图；\n\n[0036]图4是本发明实施方式中的控制电源的时序图；\n\n[0037]图5是本发明实施方式中的控制信号的时序图；\n\n[0038]图6是本发明公开的一种应用于所述背光检测电路的检测方法的流程示意图。\n\n具体实施方式\n\n[0039]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0040]本发明的说明书和权利要求书及所述附图中的术语“第一”、“第二”、“第三”和“第四”等是用于区别不同对象，而不是用于描述特定顺序。此外，术语“包括”和“具有”以及它们任何变形，意图在于覆盖不排他的包含。例如包含了一系列步骤或单元的过程、方法、系统、产品或设备没有限定于已列出的步骤或单元，而是可选地还包括没有列出的步骤或单元，或可选地还包括对于这些过程、方法、产品或设备固有的其它步骤或单元。\n\n[0041]在本文中提及“实施例”意味着，结合实施例描述的特定特征、结果或特性可以包含在本发明的至少一个实施例中。在说明书中的各个位置出现该短语并不一定均是指相同的实施例，也不是与其它实施例互斥的独立的或备选的实施例。本领域技术人员显式地和隐式地理解的是，本文所描述的实施例可以与其它实施例相结合。\n\n[0042]下面结合附图，对本发明的实施例进行描述。\n\n[0043]首先，本发明的实施例采用的方法，是在背光分区内进一步将背光检测电路进一步分组，具体的方式包括但不限于如下的方法：\n\n[0044]首先，将所述背光检测电路分成N区，任意一个分区电路包含M组mini-LED电路，其中，任意一组mini-LED电路中包含L个mini-LED和一个开关电路，所述L个mini-LED串联或并联连接形成串联mini-LED组或并联mini-LED组，可以理解的是，一个串联mini-LED组或并联mini-LED组与一个开关电路对应连接，所述开关电路为所述串联mini-LED组或并联mini-LED组提供驱动电流，其中，任意一组mini-LED电路的开关电路的S极连接电压源，G极连接控制信号CS，D极连接所述串联mini-LED组或并联mini-LED组的输入端，所述mini-LED电路的输出端接地，其中，所述N、M和L均为正整数。\n\n[0045]进一步地，任意一个分区电路的开关电路的S极连接电压源的同一个输入端，任意两个分区电路的开关电路连接电压源不同的输入端，且任意一个分区电路的任意一组mini-LED电路的开关电路的控制信号CS输入端互不相连，任意一组mini-LED电路的开关电路的控制信号CS输入端与其它每个分区电路的任意一组mini-LED电路的开关电路的控制信号CS输入端相连，连接到控制信号CS的同一个输入端。\n\n[0046]举例来说，第一个分区电路的所有开关电路的S极、第二个分区电路的所有开关电路的S极和第N个分区的所有开关电路的S极连接电压源不同的输入端口，且第一个分区电路的第一组mini-LED电路的开关电路的G极可以和第二个分区电路的任意一组mini-LED电路的开关电路的G极和第N个分区电路的任意一组mini-LED电路的开关电路的G极相连，第一个分区电路的第二组mini-LED电路的开关电路的G极可以和第二个分区电路的任意组mini-LED电路的开关电路的G极和第N个分区电路的任意组mini-LED电路的开关电路的G极相连，等等，这里不在赘诉。\n\n[0047]参阅图1A，图1A为一种背光检测电路的结构示意图。如图1A所示，图1A是在N＝1，X＝1，M＝1，L＝5时得到的示意图，图1A包含但不限于图中的五个mini-LED和一个TFT，为了方便表述，用D1、D2、D3、D4和D5表示五个mini-LED，T1表示TFT，D1、D2、D3、D4和D5连接成一个并联的mini-LED组，且该并联的mini-LED的输入端(如图1A所示的X1端口)接T1的D极，输出端(如图1A所示的X2端口)接地，T1的S极接控制电源VCC，G极接控制信号CS。\n\n[0048]参阅图1B，图1B为另一种背光检测电路的结构示意图。如图1B所示，如图1B所示，图1B是在N＝1，X＝1，M＝1，L＝5时得到的示意图，图1B包含但不限于图中的五个mini-LED和一个TFT，用D1、D2、D3、D4和D5表示五个mini-LED，T1表示TFT，D1、D2、D3、D4和D5连接成一个串联的mini-LED组，且该串联的mini-LED的输入端(如图1B所示的X1端口)接T1的D极，输出端(如图1B所示的X2端口)接地，T1的S极接控制电源VCC，G极连接控制信号CS。\n\n[0049]可选的，如图1A和图1B中所述的mini-LED，分别为蓝、绿和红三色mini-LED，所述三色mini-LED以周期形式进行排列，且所述三色mini-LED的之间混光距离小于1mm，在该混光距离下，所述三色mini-LED的强度进行均匀混合能够组成与显示面板需求相匹配的白色背光。\n\n[0050]可选的，当TFT输入的控制信号入为正压时，TFT处于打开状态，当TFT输入的控制信号入为负压时，TFT处于关闭状态。\n\n[0051]参见图2，图2为一种背光检测电路的另一种结构示意图。图2是一个分区电路的结构示意图，如图2所示，图2是在N＝1，X＝1，M＝5，L＝5时得到的示意图，图2是在图1的基础上扩展五组电路得到的，如图2所示，所述电路图包括但不限于图2中所示的五个分组电路，图2所示的电路图包括：T1、T2、T3、T4和T5五个TFT，五个分组mini-LED电路，每一组mini-LED电路都可采用如图1A或者如图1B所示的连接方式，这里我们以如图1A所示的并联连接方式为例，第一组mini-LED电路中包含由D11、D12、D13、D14和D15构成的并联的mini-LED组，该并联的mini-LED组的输入端接T1的D极，输出端接地，T1的G极接控制信号CS，S极接控制电源VCC，第二组mini-LED电路中包含由D21、D22、D23、D24和D25构成的并联的mini-LED组，该并联的mini-LED组的输入端接T2的D极，输出端接地，T2的G极连控制信号CS，S极接控制电源VCC，第三组mini-LED电路中包含由D31、D32、D33、D34和D35构成的并联的mini-LED组，该并联的mini-LED组的输入端接T3的D极，输出端接地，T3的G极接控制信号CS，S极接控制电源VCC，第四组mini-LED电路中包含由D41、D42、D43、D44和D45构成的并联的mini-LED组，该并联的mini-LED组的输入端接T4的D极，输出端接地，T4的G极接控制信号CS，S极接控制电源VCC，第五组mini-LED电路中包含由D51、D52、D53、D54和D55构成的并联的mini-LED组，该并联的mini-LED组的输入端接T5的D极，输出端接地，T5的G极接控制信号CS，S极接控制电源VCC，其中，所述T1、T2、T3、T4和T5的G极连接的控制信号CS的时序如图5所示，S极连接同一个控制电源VCC。\n\n[0052]参见图3，图3为一种背光检测电路的另一种结构示意图。如图3所示，图3是在N＝2，X＝1，M＝5，L＝5时得到的示意图，图3所述的电路可作为本发明的基础电路，更为复杂的电路可以在图3的基础上扩展更多的分区和分组得到，这里不去过度叙述，相比图1和图2为最优的实施例，但所述电路图包括但不限于图3中所示的两个分区电路，图3所示的电路图包括：两个分区电路，十个TFT，任意一个分区中有五组mini-LED电路，为了方便表述，用10表示第一个分区电路，其中，101表示第一组mini-LED电路、102表示第二组mini-LED电路、103表示第三组mini-LED电路、104第四组mini-LED电路和105表示第五组mini-LED电路，20表示第二个分区电路，201表示第一组mini-LED电路、202表示第二组mini-LED电路、203表示第三组mini-LED电路、204表示第四组mini-LED电路和205表示第五组mini-LED电路，T1、T2、T3、T4、T5、T6、T7、T8、T9和T10都表示TFT。\n\n[0053]进一步地，第一个分区电路10的连接方式如下：第一组mini-LED电路101的输入端和T1的D极连接，T1的G极接控制信号CS，S极接控制电源VCC，第二组mini-LED电路102的输入端和T2的D极连接，T2的G极接控制信号CS，S极接控制电源VCC，第三组mini-LED电路103的输入端和T3的D极连接，T3的G极接控制信号CS，S极接控制电源VCC，第四组mini-LED电路104的输入端和T4的D极连接，T4的G极接控制信号CS，S极接控制电源VCC，第五组mini-LED电路105的输入端和T5的D极连接，T5的G极接控制信号CS，S极接控制电源VCC。第二个分区电路20的连接方式如下：第一组mini-LED电路201的输入端和T6的D极连接，T6的G极接控制信号CS，S极接控制电源VCC，第二组mini-LED电路202的输入端和T7的D极连接，T7的G极接控制信号CS，S极接控制电源VCC，第三组mini-LED电路203的输入端和T8的D极连接，T8的G极接控制信号CS，S极接控制电源VCC，第四组mini-LED电路204的输入端和T9的D极连接，T9的G极接控制信号CS，S极接控制电源VCC，第五组mini-LED电路205的输入端和T10的D极连接，T10的G极接控制信号CS，S极接控制电源VCC。其中，T1和T6的G极接控制信号CS的同一个输入端口，T2和T7的G极接控制信号CS的同一个输入端口，T3和T8的G极接控制信号CS的同一个输入端口，T4和T9的G极接控制信号CS的同一个输入端口，T5和T10的G极接控制信号CS的同一个输入端口，其中，T1、T2、T3、T4和T5的S极接同一个控制电源VCC，T6、T7、T8、T9和T10的S极接同一个控制电源VCC，其中，CS的时序图如图5所示，VCC的时序图如图4所示。\n\n[0054]进一步地，图6是一种应用所述背光检测电路的检测方法的流程示意图，以图3所示的电路为例，所述检测方法包括但不限于如下步骤：\n\n[0055]步骤601：在各分区电路上加载电压源VCC信号。\n\n[0056]可选的，如图4所示，控制电压源加入电压的时序周期为t10，在不同的时刻，所示两个分区电路的TFT的S极输入不同的电压，则在0～t5内，将第一个分区的TFT的S极输入电压设置为高电平且幅值V1＝V，第二个分区的TFT的S极输入电压为V2＝2V。若所述电路有N(N＞2)个分区电路，则只需要改变控制电源的时序即可，这里不在叙述。\n\n[0057]可以理解的是，在0～t5和t5～t10加上不同的电压是为了确定在0～t5内，第二个分区电路的控制信号输入端输入的时序电压是无法开启第二个分区电路中的开关电路，同理，在t5～t10内，第一个分区电路的控制信号输入端输入的时序电压是无法开启第一个分区电路中的开关电路。\n\n[0058]步骤602：在各分区的开关电路加载控制信号CS。\n\n[0059]进一步地，如图5所示，控制信号加入的时序电压的周期为t5，可以看出在0～t1内第一组mini-LED电路的控制信号的输入端加载高电平，其余的mini-LED电路的控制信号的输入端加载低电平，在t1～t2内第二组mini-LED电路的控制信号的输入端加载高电平，其余的mini-LED电路的控制信号的输入端加载低电平，在t4～t5内第五组mini-LED电路的控制信号的输入端加载高电平，其余的mini-LED电路的控制信号的输入端加载低电平。\n\n[0060]步骤603：控制所述电压源VCC信号在任意时段仅在一个分区电路上为高平信号，所述控制信号CS在任意时段在任意分区内仅在一组mini-LED的开关电路上为导通信号。\n\n[0061]举例来说，在0～t5可将第一个分区电路的电压源的幅值设置为|UP|，第二个分区电路的电压源的幅值设置为2|UP|，另外可将控制信号的高电平的电压幅值设置为|UP|。\n\n[0062]进一步地，结合图4和图5所示的时序电路图可知，在0～t5内，第一分区电路的电压源的电压幅值为|UP|，第一分区电路的第一组、第二组、第三组、第四组和第五组mini-LED电路连接的控制信号分别在0～t1、t1～t2、t2～t3、t3～t4和t4～t5输入高电平，且高电平的幅值为|UP|，所以，在0～t1内只有第一组mini-LED电路处于打开状态，在t1～t2内，只有第二组mini-LED电路处于打开状态，在t2～t3内，只有第三组mini-LED电路处于打开状态，在t3～t4内，只有第四组mini-LED电路处于打开状态，在t4～t5内，只有第五组mini-LED电路处于打开状态，而在0～t5内，第二个分区电路的电压源输入的电压幅值为2|UP|，则在0～t5内，第二个分区电路的五组mini-LED电路均处于关闭状态，在t5～t10内，则逐个开启第二个分区电路的五组mini-LED电路，开启方式与第一个分区电路的开启方式一致，这里不在赘诉。\n\n[0063]步骤604：检测所述背光检测电路的输出电压和电流。\n\n[0064]进一步地，在输入所述电压VCC和所述控制信号CS后，所述背光检测电路将以行列扫描的形式逐次打开每个分区电路的TFT，在打开该分区的TFT之后，在逐次打开五组mini-LED电路，在打开一组mini-LED电路后检测该组的输出电压和电流。\n\n[0065]步骤605：根据所述输出电压和电流计算输出阻抗，若所述输出阻抗超出预设范围，确定该组mini-LED电路异常。\n\n[0066]检测出具有异常mini-LED的分组电路具体的实施方式可以为：在打开所述检测电路的某一分区电路的某一组的mini-LED时，检测该组的输出电压和输出电流，根据所述输出电压和输出电流计算输出阻抗。\n\n[0067]举例来说，在打开第一个分区第一组mini-LED电路时，若该组中至少有一个mini-LED断路时或者至少有一个mini-LED短路时，则根据检测到的输出电压和输出电流求计算出该组的输出阻抗，若该输出阻抗超出预设范围，则证明该组电路中存在异常的mini-LED，在重工处理时需要将该组的mini-LED全部替换掉。\n\n[0068]可以理解的是，若所述检测电路采用串联mini-LED组，则检测方法与并联mini-LED组一致，这里不在叙述。\n\n[0069]进一步地，若检测到所有分区的mini-LED全部点亮后，则控制中心不在向所述检测电路的TFT的G极和S极输入图3中所述的电压，所述控制中心根据不同的视频信号向所述检测电路输入电压，然后根据不同的视频信号，点亮所述N个分区电路中对应的mini-LED。\n\n[0070]可以看出，本发明实施例采用小尺寸mini-LED作为直下式背光源，任意分区均含有多颗mini-LED，这种排列多颗mini-LED的方式有效的减小了混光距离，满足小尺寸轻薄显示的需求，并且对任意一个背光分区的mini-LED进行进一步分组，并采用耗尽型TFT作为每一组的开关电路，为每一组mini-LED提供驱动电流，在检测时对分区内不同分组逐个打开检测，对含有异常mini-LED的分组进行重工处理，有效的减少了单一分区重工处理时面临的巨量mini-LED损失，而且，可以根据不同的视频信号，点亮对应分区的分组的mini-LED，进一步地提高了对比度，最后，同一分区采用统一电流驱动，检测电路无额外附加功耗。\n\n[0071]可选的，本发明还公开了一种背光模组，所述背光模组包括如图2所示的电路，图2是在图1的基础上扩展五组电路得到的，如图2所示，所述电路图包括但不限于图2中所示的五个分组电路，图2所示的电路图包括：T1、T2、T3、T4和T5五个TFT，五个分组mini-LED电路，每一组mini-LED电路都可采用如图1A或者如图1B所示的连接方式，这里我们以如图1A所示的并联连接方式为例，第一组mini-LED电路中包含由D11、D12、D13、D14和D15构成的并联的mini-LED组，该并联的mini-LED组的输入端接T1的D极，输出端接地，T1的G极接控制信号CS，S极接控制电源VCC，第二组mini-LED电路中包含由D21、D22、D23、D24和D25构成的并联的mini-LED组，该并联的mini-LED组的输入端接T2的D极，输出端接地，T2的G极连控制信号CS，S极接控制电源VCC，第三组mini-LED电路中包含由D31、D32、D33、D34和D35构成的并联的mini-LED组，该并联的mini-LED组的输入端接T3的D极，输出端接地，T3的G极接控制信号CS，S极接控制电源VCC，第四组\n\n[0072]mini-LED电路中包含由D41、D42、D43、D44和D45构成的并联的mini-LED组，该并联的mini-LED组的输入端接T4的D极，输出端接地，T4的G极接控制信号CS，S极接控制电源VCC，第五组mini-LED电路中包含由D51、D52、D53、D54和D55构成的并联的mini-LED组，该并联的mini-LED组的输入端接T5的D极，输出端接地，T5的G极接控制信号CS，S极接控制电源VCC，其中，所述T1、T2、T3、T4和T5的G极连接的控制信号CS的时序如图5所示，S极连接同一个控制电源VCC。\n\n[0073]可选的，所述背光模组还包括如图3所示的电路。如图3所示，图3是在N＝2，X＝1，M＝5，L＝5时得到的示意图，图3所述的电路可作为本发明的基础电路，更为复杂的电路可以在图3的基础上扩展更多的分区和分组得到，这里不去过度叙述，相比图1和图2为最优的实施例，但所述电路图包括但不限于图3中所示的两个分区电路，图3所示的电路图包括：两个分区电路，十个TFT，任意一个分区中有五组mini-LED电路，为了方便表述，用10表示第一个分区电路，其中，101表示第一组mini-LED电路、102表示第二组mini-LED电路、103表示第三组mini-LED电路、104第四组mini-LED电路和105表示第五组mini-LED电路，20表示第二个分区电路，201表示第一组mini-LED电路、202表示第二组mini-LED电路、203表示第三组mini-LED电路、204表示第四组mini-LED电路和205表示第五组mini-LED电路，T1、T2、T3、T4、T5、T6、T7、T8、T9和T10都表示TFT。\n\n[0074]进一步地，第一个分区电路10的连接方式如下：第一组mini-LED电路101的输入端和T1的D极连接，T1的G极接控制信号CS，S极接控制电源VCC，第二组mini-LED电路102的输入端和T2的D极连接，T2的G极接控制信号CS，S极接控制电源VCC，第三组mini-LED电路103的输入端和T3的D极连接，T3的G极接控制信号CS，S极接控制电源VCC，第四组mini-LED电路104的输入端和T4的D极连接，T4的G极接控制信号CS，S极接控制电源VCC，第五组mini-LED电路105的输入端和T5的D极连接，T5的G极接控制信号CS，S极接控制电源VCC。第二个分区电路20的连接方式如下：第一组mini-LED电路201的输入端和T6的D极连接，T6的G极接控制信号CS，S极接控制电源VCC，第二组mini-LED电路202的输入端和T7的D极连接，T7的G极接控制信号CS，S极接控制电源VCC，第三组mini-LED电路203的输入端和T8的D极连接，T8的G极接控制信号CS，S极接控制电源VCC，第四组mini-LED电路204的输入端和T9的D极连接，T9的G极接控制信号CS，S极接控制电源VCC，第五组mini-LED电路205的输入端和T10的D极连接，T10的G极接控制信号CS，S极接控制电源VCC。其中，T1和T6的G极接控制信号CS的同一个输入端口，T2和T7的G极接控制信号CS的同一个输入端口，T3和T8的G极接控制信号CS的同一个输入端口，T4和T9的G极接控制信号CS的同一个输入端口，T5和T10的G极接控制信号CS的同一个输入端口，其中，T1、T2、T3、T4和T5的S极接同一个控制电源VCC，T6、T7、T8、T9和T10的S极接同一个控制电源VCC，其中，CS的时序图如图5所示，VCC的时序图如图4所示。\n\n[0075]可选的，所述背光模组还用如图6所述的检测方法，包括：\n\n[0076]步骤601：在各分区电路上加载电压源VCC信号。\n\n[0077]如图4所示，控制电源加入的时序电压的周期为t10，在不同的时刻，所示两个分区电路的TFT的S极输入不同的电压，则在0～t5内，将第一个分区的TFT的S极输入电压设置为为高电平且幅值V1＝V，第二个分区的TFT的S极输入电压为V2＝2V。若所述电路有N(N＞2)个分区电路，则只需要改变控制电源的时序即可，这里不在叙述。\n\n[0078]可以理解的是，在0～t5和t5～t10加上不同的电压是为了确定在0～t5内，第二个分区电路的控制信号输入端输入的时序电压是无法开启第二个分区电路中的开关电路，同理，在t5～t10内，第一个分区电路的控制信号输入端输入的时序电压是无法开启第一个分区电路中的开关电路。\n\n[0079]步骤602：在各分区的开关电路加载控制信号CS。\n\n[0080]进一步地，如图5所示，控制信号加入的时序电压的周期为t5，可以看出在0～t1内第一组mini-LED电路的控制信号的输入端加载高电平，其余的mini-LED电路的控制信号的输入端加载低电平，在t1～t2内第二组mini-LED电路的控制信号的输入端加载高电平，其余的mini-LED电路的控制信号的输入端加载低电平，在t4～t5内第五组mini-LED电路的控制信号的输入端加载高电平，其余的mini-LED电路的控制信号的输入端加载低电平。\n\n[0081]步骤603：控制所述电压源VCC信号在任意时段仅在一个分区电路上为高平信号，所述控制信号CS在任意时段在任意分区内仅在一组mini-LED的开关电路上为导通信号。\n\n[0082]举例来说，在0～t5可将第一个分区电路的电压源的幅值设置为|UP|，第二个分区电路的电压源的幅值设置为2|UP|，另外可将控制信号的高电平的电压幅值设置为|UP|。\n\n[0083]进一步地，结合图4和图5所示的时序电路图可知，在0～t5内，第一分区电路的电压源的电压幅值为|UP|，第一分区电路的第一组、第二组、第三组、第四组和第五组mini-LED电路连接的控制信号分别在0～t1、t1～t2、t2～t3、t3～t4和t4～t5输入高电平，且高电平的幅值为|UP|，所以，在0～t1内只有第一组mini-LED电路处于打开状态，在t1～t2内，只有第二组mini-LED电路处于打开状态，在t2～t3内，只有第三组mini-LED电路处于打开状态，在t3～t4内，只有第四组mini-LED电路处于打开状态，在t4～t5内，只有第五组mini-LED电路处于打开状态，而在0～t5内，第二个分区电路的电压源输入的电压幅值为2|UP|，则在0～t5内，第二个分区电路的五组mini-LED电路均处于关闭状态，在t5～t10内，则逐个开启第二个分区电路的五组mini-LED电路，开启方式与第一个分区电路的开启方式一致，这里不在赘诉。\n\n[0084]步骤603：检测所述背光检测电路的输出电压和电流。\n\n[0085]进一步地，在输入所述电压VCC和所述控制信号CS后，所述背光检测电路将以行列扫描的形式逐次打开每个分区电路的TFT，在打开该分区的TFT之后，在逐次打开五组mini-LED电路，在打开一组mini-LED电路后检测该组的输出电压和电流。\n\n[0086]步骤604：根据所述输出电压和电流计算输出阻抗，若所述输出阻抗超出预设范围，确定该组mini-LED电路异常。\n\n[0087]检测出具有异常mini-LED的分组电路具体的实施方式可以为：在打开所述检测电路的某一分区电路的某一组的mini-LED时，检测该组的输出电压和输出电流，根据所述输出电压和输出电流计算输出阻抗。\n\n[0088]举例来说，在打开第一个分区第一组mini-LED电路时，若该组中至少有一个mini-LED断路时或者至少有一个mini-LED短路时，则计算检测到的输出电压和输出电流求出该组的阻抗，若该阻抗超出预设范围，则证明电路中存在异常的mini-LED，在重工处理时需要将该组的mini-LED全部替换掉。\n\n[0089]可选的，本发明还公布了一种显示屏，所述显示屏包括上诉背光模组。\n\n[0090]可选的，本发明还公布了一种电子设备，所述电子设备包括上诉显示屏。\n\n[0091]以上对本发明实施例进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的一般技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10610, 23664, '技术领域\n\n[0001]本发明涉及LED显示领域，特别是涉及一种微型LED显示面板及微型LED显示器。\n\n背景技术\n\n[0002]Micro LED技术，即LED微缩化和矩阵化技术。Micro LED display是底层用正常的CMOS集成电路制造工艺制成LED显示驱动电路。然后再用MOCVD机在集成电路上制作LED阵列。\n\n[0003]但是，现有技术中并未提供一种基于LED微缩化技术的显示面板，基于LED微缩化技术的显示面板的布线以及结构均处于盲区。\n\n[0004]因此，现有技术存在缺陷，急需改进。\n\n发明内容\n\n[0005]本发明的目的在于提供一种微型LED显示面板及微型LED显示器。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明提供一种微型LED显示面板，包括：\n\n[0008]第一基板；\n\n[0009]第二基板，其朝向第一基板的一面上设置有阴极驱动电路；\n\n[0010]N根行信号线，其设置于第一基板上；\n\n[0011]绝缘层，其设置于第一基板以及行信号控制线上；\n\n[0012]M根列信号线，其设置于绝缘层上；\n\n[0013]M根补偿信号线，其设置于绝缘层上；\n\n[0014]多个LED发光组件，该多个LED发光组件呈M行N列阵列的排布于第一基板上，其中，同一行的LED发光组件与同一行信号线电连接，同一列的LED发光组件与同一补偿信号线以及同一列信号线连接，每一LED发光组件的远离第一基板的一端与第二基板相连且与阴极驱动电路电连接。\n\n[0015]在本发明所述的微型LED显示面板中，每一所述LED发光组件包括：\n\n[0016]第一薄膜晶体管，该第一薄膜晶体管设置于第一基板上，其源极与对应列信号线电连接，其栅极与对应行的行信号线电连接；\n\n[0017]第二薄膜晶体管，该第二薄膜晶体管设置于第一基板上，其源极与对应列的补偿信号线连接，其栅极与第一薄膜晶体管的漏极电连接；\n\n[0018]第一连接金属层，该第一连接金属层设置于第一基板且与该行信号线电连接；\n\n[0019]第二连接金属层，该第二连接金属层设置绝缘层上，该第一连接金属层与第二连接金属层局部相互正对以形成储能电容；\n\n[0020]发光单元，该发光单元的一端与阴极驱动电路电连接，另一端与第二连接金属层以及第二薄膜晶体管的漏极电连接。\n\n[0021]在本发明所述的微型LED显示面板中，所述绝缘层为氮化硅层或二氧化硅层。\n\n[0022]在本发明所述的微型LED显示面板中，所述第一基板以及第二基板均为玻璃基板。\n\n[0023]在本发明所述的微型LED显示面板中，所述发光单元为无机LED。\n\n[0024]在本发明所述的微型LED显示面板中，所述发光单元采用网印工艺设置于该第一基板上。\n\n[0025]在本发明所述的微型LED显示面板中，所述发光单元采用喷洒工艺设置于该第一基板上。\n\n[0026]在本发明所述的微型LED显示面板中，所述发光单元采用银胶点印工艺设置于该第一基板上。\n\n[0027]在本发明所述的微型LED显示面板中，所述行信号线、列信号线以及补偿信号线均采用黄光制程形成。\n\n[0028]本发明还提供了一种微型LED显示器，包括上述任一项所述的微型LED显示面板。\n\n[0029]本发明相对于现有技术，通过在第一基板上设置阴极驱动电路，在第二基板上设置行信号线、列信号线以及补偿信号，从而实现微型LED显示面板及微型LED显示器的功能，且可以通过行信号线、列信号线以及补偿信号来实现对发光组件的发光开关控制以及光通量控制。\n\n附图说明\n\n[0030]图1是本发明的微型LED显示面板的一种平面结构示意图。\n\n[0031]图2是本发明的微型LED显示面板的一种剖面结构示意图。\n\n[0032]图3是本发明的微型LED显示面板的局部电路原理图。\n\n具体实施方式\n\n[0033]以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。\n\n[0034]在图中，结构相似的模块是以相同标号表示。\n\n[0035]请参照图1、图2以及图3，该微型LED显示面板包括第一基板10、第二基板20、N根行信号线30、绝缘层40、M根列信号线50、M根补偿信号线60以及多个LED发光组件70。该多个LED发光组件70呈阵列分布。\n\n[0036]其中，该第一基板10为玻璃基板。\n\n[0037]其中，该第二基板20为玻璃基板。该第二基板20朝向第一基板10的一面上设置有阴极驱动电路21。该阴极驱动电路21可以采用黄光制程工艺形成于该第二基板20上。\n\n[0038]其中，该N根行信号线30均设置于该第一基板10上。每一根行信号线30用于给对应行的LED发光组件70提供第一电信号。\n\n[0039]其中，该绝缘层40设置于第一基板10以及行信号控制线30上。绝缘层40可以为氮化硅层或者二氧化硅层，采用化学气相沉淀法制成。\n\n[0040]其中，该M根列信号线50均设置于绝缘层40上，每一列信号线用于给对应列的LED发光组件70提供第二电信号。\n\n[0041]其中，该M根补偿信号线60设置于绝缘层40上，每一补偿信号线用于给对应列的LED发光组件70提供补偿信号。\n\n[0042]其中，该多个LED发光组件70呈M行N列阵列的排布于第一基板10上，每一LED发光组件70的远离第一基板10的一端与第二基板20相连且与阴极驱动电路21电连接，每一LED发光组件70与对应行的行信号线30、对应列的补偿信号线60以及对应列的列信号线50电连接。\n\n[0043]在实际制作中，行信号线、列信号线以及补偿信号线均采用黄光制程形成。该行信号线30包括第一子行信号30a以及第二子行信号线30b。\n\n[0044]该LED发光组件70包括发光单元71、第一连接金属层72、第二连接金属层73、第一薄膜晶体管75以及第二薄膜晶体管74。\n\n[0045]其中，该发光单元71为无机LED。发光单元71可以采用喷洒工艺设置于该第一基板10上。或者，该发光单元71可以采用银胶点印工艺设置于该第一基板10上。或者，发光单元71采用网印工艺设置于该第一基板10上。\n\n[0046]第一薄膜晶体管75设置于第一基板10上，其源极与对应列信号线50电连接，其栅极与对应行的行信号线30的第二子行信号线30b电连接。其漏极与第二薄膜晶体管74的栅极电连接。第二薄膜晶体管74设置于第一基板10上，其源极与对应列的补偿信号线60连接电连接。\n\n[0047]第一连接金属层72设置于第一基板10上，其与该行信号线30位于同一层。且该第一连接金属层72与该行信号线30的第一子行信号线30a电连接。先在该第一基板10形成一金属层，然后对该金属层进行图形化处理，以分别形成该多条行信号线30以及第一连接金属层72。\n\n[0048]该第二连接金属层73设置于该第一基板10上。具体地，该第二连接金属层73设置于该绝缘层40上。该第一连接金属层72与第二连接金属层73局部相互正对以形成储能电容C。该第二连接金属层73与列信号线50、补偿信号线60位于同一层。该发光单元71的阳极与该第二连接金属层73以及该第二薄膜晶体管74的漏极连接。该发光单元71的阴极与第二基板20上的阴极驱动电路21电连接。\n\n[0049]在实际制作中，可以先在该绝缘层40上沉积一金属层，然后对该金属层进行图形化处理，以分别形成该第二连接金属层73与列信号线50、补偿信号线60。\n\n[0050]工作时，该列信号线提供第二电信号给该第一薄膜晶体管的源极。该行信号线提供第一电信号给该储能电容C1以及第一薄膜晶体管的栅极。该补偿信号线提供补偿电压信号给该第二薄膜晶体管的源极。该第一电信号通过该储能电容C1给该发光单元的阳极供电，从而驱动该发光单元发光。该第一电信号将该第一薄膜晶体管打开，使得该第二电信号传递至该第二薄膜晶体管的栅极处，从而将该第二薄膜晶体管导通，该第二薄膜晶体管导通使得该补偿电压信号传递至该发光单元的阳极处，从而提高补偿电流给该发光单元，以调节其发光亮度。\n\n[0051]本发明实施例还提供了一种微型LED显示器，其包括上述实施例中的微型LED显示面板。\n\n[0052]本发明相对于现有技术，通过在第一基板上设置阴极驱动电路，在第二基板上设置行信号线、列信号线以及补偿信号，从而实现微型LED显示面板及微型LED显示器的功能，且可以通过行信号线、列信号线以及补偿信号来实现对发光组件的发光开关控制以及光通量控制。\n\n[0053]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及LED显示领域，特别是涉及一种微型LED显示面板及微型LED显示器。\n\n背景技术\n\n[0002]Micro LED技术，即LED微缩化和矩阵化技术。Micro LED display是底层用正常的CMOS集成电路制造工艺制成LED显示驱动电路。然后再用MOCVD机在集成电路上制作LED阵列。\n\n[0003]但是，现有技术中并未提供一种基于LED微缩化技术的显示面板，基于LED微缩化技术的显示面板的布线以及结构均处于盲区。\n\n[0004]因此，现有技术存在缺陷，急需改进。\n\n发明内容\n\n[0005]本发明的目的在于提供一种微型LED显示面板及微型LED显示器。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明提供一种微型LED显示面板，包括：\n\n[0008]第一基板；\n\n[0009]第二基板，其朝向第一基板的一面上设置有阴极驱动电路；\n\n[0010]N根行信号线，其设置于第一基板上；\n\n[0011]绝缘层，其设置于第一基板以及行信号控制线上；\n\n[0012]M根列信号线，其设置于绝缘层上；\n\n[0013]M根补偿信号线，其设置于绝缘层上；\n\n[0014]多个LED发光组件，该多个LED发光组件呈M行N列阵列的排布于第一基板上，其中，同一行的LED发光组件与同一行信号线电连接，同一列的LED发光组件与同一补偿信号线以及同一列信号线连接，每一LED发光组件的远离第一基板的一端与第二基板相连且与阴极驱动电路电连接。\n\n[0015]在本发明所述的微型LED显示面板中，每一所述LED发光组件包括：\n\n[0016]第一薄膜晶体管，该第一薄膜晶体管设置于第一基板上，其源极与对应列信号线电连接，其栅极与对应行的行信号线电连接；\n\n[0017]第二薄膜晶体管，该第二薄膜晶体管设置于第一基板上，其源极与对应列的补偿信号线连接，其栅极与第一薄膜晶体管的漏极电连接；\n\n[0018]第一连接金属层，该第一连接金属层设置于第一基板且与该行信号线电连接；\n\n[0019]第二连接金属层，该第二连接金属层设置绝缘层上，该第一连接金属层与第二连接金属层局部相互正对以形成储能电容；\n\n[0020]发光单元，该发光单元的一端与阴极驱动电路电连接，另一端与第二连接金属层以及第二薄膜晶体管的漏极电连接。\n\n[0021]在本发明所述的微型LED显示面板中，所述绝缘层为氮化硅层或二氧化硅层。\n\n[0022]在本发明所述的微型LED显示面板中，所述第一基板以及第二基板均为玻璃基板。\n\n[0023]在本发明所述的微型LED显示面板中，所述发光单元为无机LED。\n\n[0024]在本发明所述的微型LED显示面板中，所述发光单元采用网印工艺设置于该第一基板上。\n\n[0025]在本发明所述的微型LED显示面板中，所述发光单元采用喷洒工艺设置于该第一基板上。\n\n[0026]在本发明所述的微型LED显示面板中，所述发光单元采用银胶点印工艺设置于该第一基板上。\n\n[0027]在本发明所述的微型LED显示面板中，所述行信号线、列信号线以及补偿信号线均采用黄光制程形成。\n\n[0028]本发明还提供了一种微型LED显示器，包括上述任一项所述的微型LED显示面板。\n\n[0029]本发明相对于现有技术，通过在第一基板上设置阴极驱动电路，在第二基板上设置行信号线、列信号线以及补偿信号，从而实现微型LED显示面板及微型LED显示器的功能，且可以通过行信号线、列信号线以及补偿信号来实现对发光组件的发光开关控制以及光通量控制。\n\n附图说明\n\n[0030]图1是本发明的微型LED显示面板的一种平面结构示意图。\n\n[0031]图2是本发明的微型LED显示面板的一种剖面结构示意图。\n\n[0032]图3是本发明的微型LED显示面板的局部电路原理图。\n\n具体实施方式\n\n[0033]以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。\n\n[0034]在图中，结构相似的模块是以相同标号表示。\n\n[0035]请参照图1、图2以及图3，该微型LED显示面板包括第一基板10、第二基板20、N根行信号线30、绝缘层40、M根列信号线50、M根补偿信号线60以及多个LED发光组件70。该多个LED发光组件70呈阵列分布。\n\n[0036]其中，该第一基板10为玻璃基板。\n\n[0037]其中，该第二基板20为玻璃基板。该第二基板20朝向第一基板10的一面上设置有阴极驱动电路21。该阴极驱动电路21可以采用黄光制程工艺形成于该第二基板20上。\n\n[0038]其中，该N根行信号线30均设置于该第一基板10上。每一根行信号线30用于给对应行的LED发光组件70提供第一电信号。\n\n[0039]其中，该绝缘层40设置于第一基板10以及行信号控制线30上。绝缘层40可以为氮化硅层或者二氧化硅层，采用化学气相沉淀法制成。\n\n[0040]其中，该M根列信号线50均设置于绝缘层40上，每一列信号线用于给对应列的LED发光组件70提供第二电信号。\n\n[0041]其中，该M根补偿信号线60设置于绝缘层40上，每一补偿信号线用于给对应列的LED发光组件70提供补偿信号。\n\n[0042]其中，该多个LED发光组件70呈M行N列阵列的排布于第一基板10上，每一LED发光组件70的远离第一基板10的一端与第二基板20相连且与阴极驱动电路21电连接，每一LED发光组件70与对应行的行信号线30、对应列的补偿信号线60以及对应列的列信号线50电连接。\n\n[0043]在实际制作中，行信号线、列信号线以及补偿信号线均采用黄光制程形成。该行信号线30包括第一子行信号30a以及第二子行信号线30b。\n\n[0044]该LED发光组件70包括发光单元71、第一连接金属层72、第二连接金属层73、第一薄膜晶体管75以及第二薄膜晶体管74。\n\n[0045]其中，该发光单元71为无机LED。发光单元71可以采用喷洒工艺设置于该第一基板10上。或者，该发光单元71可以采用银胶点印工艺设置于该第一基板10上。或者，发光单元71采用网印工艺设置于该第一基板10上。\n\n[0046]第一薄膜晶体管75设置于第一基板10上，其源极与对应列信号线50电连接，其栅极与对应行的行信号线30的第二子行信号线30b电连接。其漏极与第二薄膜晶体管74的栅极电连接。第二薄膜晶体管74设置于第一基板10上，其源极与对应列的补偿信号线60连接电连接。\n\n[0047]第一连接金属层72设置于第一基板10上，其与该行信号线30位于同一层。且该第一连接金属层72与该行信号线30的第一子行信号线30a电连接。先在该第一基板10形成一金属层，然后对该金属层进行图形化处理，以分别形成该多条行信号线30以及第一连接金属层72。\n\n[0048]该第二连接金属层73设置于该第一基板10上。具体地，该第二连接金属层73设置于该绝缘层40上。该第一连接金属层72与第二连接金属层73局部相互正对以形成储能电容C。该第二连接金属层73与列信号线50、补偿信号线60位于同一层。该发光单元71的阳极与该第二连接金属层73以及该第二薄膜晶体管74的漏极连接。该发光单元71的阴极与第二基板20上的阴极驱动电路21电连接。\n\n[0049]在实际制作中，可以先在该绝缘层40上沉积一金属层，然后对该金属层进行图形化处理，以分别形成该第二连接金属层73与列信号线50、补偿信号线60。\n\n[0050]工作时，该列信号线提供第二电信号给该第一薄膜晶体管的源极。该行信号线提供第一电信号给该储能电容C1以及第一薄膜晶体管的栅极。该补偿信号线提供补偿电压信号给该第二薄膜晶体管的源极。该第一电信号通过该储能电容C1给该发光单元的阳极供电，从而驱动该发光单元发光。该第一电信号将该第一薄膜晶体管打开，使得该第二电信号传递至该第二薄膜晶体管的栅极处，从而将该第二薄膜晶体管导通，该第二薄膜晶体管导通使得该补偿电压信号传递至该发光单元的阳极处，从而提高补偿电流给该发光单元，以调节其发光亮度。\n\n[0051]本发明实施例还提供了一种微型LED显示器，其包括上述实施例中的微型LED显示面板。\n\n[0052]本发明相对于现有技术，通过在第一基板上设置阴极驱动电路，在第二基板上设置行信号线、列信号线以及补偿信号，从而实现微型LED显示面板及微型LED显示器的功能，且可以通过行信号线、列信号线以及补偿信号来实现对发光组件的发光开关控制以及光通量控制。\n\n[0053]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10611, 23665, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微型发光二极管显示装置及其制作方法。\n\n背景技术\n\n[0002]Micro LED(微型发光二极管)技术，即LED微缩化矩阵化技术，指的是在一个芯片上集成高密度微小尺寸的LED阵列；LED显示屏每一个像素可定址、单独驱动点亮，MicroLED显示屏可看成是户外LED显示屏的微缩版，将像素点距离从毫米降低至微米级。\n\n[0003]Micro LED的优点非常多，它具有无机LED的高效率、高亮度、高可靠度及反应时间快等优点，并且具有自发光无需背光源的特性，更具有节能、体积小、机构简易等优势。\n\n[0004]通常，其制作方法为：先在蓝宝石类的基板上通过分子束外延生长出来LED微器件，然后把LED发光微器件转移到玻璃基板上。由于制作LED微器件的蓝宝石基板尺寸基本上就是硅晶元的尺寸，而制作显示器则是尺寸大得多的玻璃基板，因此必然需要进行多次转运。并且，制备红、绿、蓝阵列需要将发出红、绿、蓝三原色的LED晶粒分别从原始衬底转移到接收基板，由于涉及巨量的微小发光二极管精确转移，而且转移次数多，因此转移过程所需时间长，实施技术难度相当大。\n\n发明内容\n\n[0005]鉴于现有技术存在的不足，本发明提供了一种减少发光二极管转移次数，降低Micro LED转移技术难度的微型发光二极管显示装置及其制作方法。\n\n[0006]为了实现上述的目的，本发明采用了如下的技术方案：\n\n[0007]一种微型发光二极管显示装置，包括基板、阵列设置在所述基板上表面且用于发出蓝光的微型发光二极管、设于所述微型发光二极管出光侧的黄色荧光粉层以及设于所述黄色荧光粉层出光侧的彩色滤光层，所述彩色滤光层包括红色滤光区域、绿色滤光区域以及透光区域，所述黄色荧光粉层表面间隔地开设有透光孔，所述透光孔与所述透光区域正对。\n\n[0008]作为其中一种实施方式，每个所述微型发光二极管分别与一个所述红色滤光区域、绿色滤光区域或透光区域正对。\n\n[0009]作为其中一种实施方式，所述透光区域为透明的滤光区域。\n\n[0010]或者，所述透光区域为所述彩色滤光层上开设的贯穿孔。\n\n[0011]作为其中一种实施方式，所述贯穿孔内填充有无色透光材料，且所述无色透光材料表面与所述彩色滤光层表面平齐。\n\n[0012]作为其中一种实施方式，所述的微型发光二极管显示装置还包括保护层，所述保护层形成于所述基板上表面并覆盖所有的所述微型发光二极管，所述保护层的上表面为平面，所述黄色荧光粉层形成于所述保护层表面。\n\n[0013]作为其中一种实施方式，所述黄色荧光粉层设于所述保护层上表面，并与所述彩色滤光层的贴合。\n\n[0014]或者，所述黄色荧光粉层设于所述保护层上朝向所述微型发光二极管的表面，所述彩色滤光层与所述保护层上表面贴合。\n\n[0015]作为其中一种实施方式，所述的微型发光二极管显示装置还包括用于遮光的黑色矩阵层，所述彩色滤光层的红色滤光区域、绿色滤光区域和透光区域的每两个相邻的区域之间设有镂空的缝隙，所述黑色矩阵层填充于所述缝隙内。\n\n[0016]本发明的另一目的在于提供一种微型发光二极管显示装置的制作方法，包括：\n\n[0017]提供一基板；\n\n[0018]在所述基板上表面阵列形成用于发出蓝光的微型发光二极管；\n\n[0019]在所述基板上表面形成同时覆盖所述微型发光二极管和所述基板的保护层；\n\n[0020]在所述保护层上表面制作具有栅格状图案的黑色矩阵层；\n\n[0021]在所述保护层上表面形成填充在所述黑色矩阵层图案内的黄色荧光粉层，且所述黄色荧光粉层的表面间隔地形成透光孔，所述黄色荧光粉层的厚度小于所述黑色矩阵层的厚度；\n\n[0022]在所述黑色矩阵层图案内和所述透光孔内制作彩色滤光层，所述彩色滤光层包括红色滤光区域、绿色滤光区域以及透光区域，所述彩色滤光层的透光区域与相应的所述透光孔正对。\n\n[0023]本发明的微型发光二极管均发出蓝光，通过将其一次性地转印在基板上，然后利用该微型发光二极管激发黄色荧光粉层，再与出光方向上的彩色滤光层配合，即可实现彩色显示的目的，减少了发光二极管转移次数，工艺制程更加简化，降低了Micro LED的转移技术难度。\n\n附图说明\n\n[0024]图1为本发明实施例的一种微型发光二极管显示装置的结构示意图；\n\n[0025]图2为本发明实施例的一种微型发光二极管显示装置的制作过程示意图；\n\n[0026]图3为本发明实施例的一种微型发光二极管显示装置的制作方法示意图。\n\n具体实施方式\n\n[0027]为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。\n\n[0028]参阅图1，本发明实施例的微型发光二极管显示装置包括基板10、阵列设置在基板10上表面且用于发出蓝光的微型发光二极管20、设于微型发光二极管20出光侧的黄色荧光粉层30以及设于黄色荧光粉层30出光侧的彩色滤光层40，彩色滤光层40包括红色滤光区域41、绿色滤光区域42以及透光区域43，黄色荧光粉层30表面间隔地开设有透光孔300，透光孔300与透光区域43正对。\n\n[0029]由于本实施例的所有的微型发光二极管20都发出相同的蓝光，微型发光二极管20可以采用转印技术一次性地制作在阵列基板上，本实施例中，每个微型发光二极管20分别与一个红色滤光区域41、绿色滤光区域42或透光区域43正对，各区域下方正对的微型发光二极管20发出的蓝光先激发黄色荧光粉层30发出黄光，在红色滤光区域41与绿色滤光区域42所对应的显示区域，透过红色滤光区域41的黄光则发出红光，透过绿色滤光区域42的黄光则发出绿光；在透光区域43所对应的显示区域，微型发光二极管20发出的蓝光依次透过透光孔300、透光区域43发出。最终，透过彩色滤光层40射出的光线既有蓝色，又有绿色和红色，涵盖了三原色，通过控制各微型发光二极管20电流的大小即可控制每个像素点的光线强弱，即可实现彩色显示的目的。\n\n[0030]本实施例的微型发光二极管显示装置还具有保护层50，该保护层50形成于基板10上表面，并覆盖所有的微型发光二极管20，保护层50的上表面为平面，黄色荧光粉层30以涂覆等方式形成于保护层50的上表面，并与彩色滤光层40的贴合。需要注意的是，黄色荧光粉层30并非完全覆盖保护层50的上表面，黄色荧光粉层30的表面间隔地开设有透光孔300，透光孔300与透光区域43正对，以供蓝光光线直接透过，并自彩色滤光层40的透光区域43射出。\n\n[0031]另外，为防止相邻的两个像素之间串光，微型发光二极管显示装置还具有用于遮光的黑色矩阵层60，黑色矩阵层60的厚度等于黄色荧光粉层30、彩色滤光层40的厚度之和。彩色滤光层40的红色滤光区域41、绿色滤光区域42和透光区域43的每两个相邻的区域之间设有镂空的缝隙，黑色矩阵层60填充于该缝隙内，使得黑色矩阵层60遮挡于彩色滤光层40的每两个相邻的滤光区域之间，各滤光区域之间的光线互不干涉。这里，黑色矩阵层60的底端还延伸至填充黄色荧光粉层30的透光孔300，即黑色矩阵层60延伸至保护层50的上表面，可以保证自黄色荧光粉层30激发后射出的光线不从透光孔300底部的边缘进入到彩色滤光层40的透光区域43，进一步地提升了显示可靠性。\n\n[0032]在其他实施方式中，黄色荧光粉层30也可以改为设于保护层50上朝向微型发光二极管20的表面(即内表面)，彩色滤光层40底面与保护层50上表面贴合，黑色矩阵层60的厚度等于彩色滤光层40的厚度。\n\n[0033]彩色滤光层40的该透光区域43可以是透明的滤光区域，也可以是彩色滤光层40上开设的贯穿孔，该贯穿孔内可填充有无色透光材料，且无色透光材料表面与彩色滤光层40表面平齐，以保证彩色滤光层40、黑色矩阵层60的完整性和强度。\n\n[0034]结合图2和图3所示，本发明还提供了一种微型发光二极管显示装置的制作方法，包括：\n\n[0035]S01、提供一基板10，该基板10即薄膜晶体管阵列基板(TFT阵列基板)；\n\n[0036]S02、在基板10上表面阵列形成用于发出蓝光的微型发光二极管20，微型发光二极管20可以利用转移头固定到基板10上，然后再沉积透明导电膜，通过刻蚀工艺将透明导电膜制作成连接各微型发光二极管20的电极线；\n\n[0037]S03、在基板10上表面形成同时覆盖微型发光二极管20和基板10的保护层50，该保护层50作为封装层，同时，其具有平整的表面，还作为后续的黄色荧光粉层30、黑色矩阵层60的制作衬底；\n\n[0038]S04、在保护层50上表面制作具有栅格状图案的黑色矩阵层60，以防止不同颜色的光线串光发生混色而影响显示，其中，每个栅格对应一个微型发光二极管20及彩色滤光层40的一个滤光区域；\n\n[0039]S05、在保护层50上表面形成填充在黑色矩阵层60图案内的黄色荧光粉层30，且黄色荧光粉层30的表面间隔地形成透光孔300，黄色荧光粉层30的厚度小于黑色矩阵层60的厚度，以在黑色矩阵层60内预留出后续的彩色滤光层40的制作空间；\n\n[0040]S06、在黑色矩阵层60图案内和透光孔300内制作彩色滤光层40，彩色滤光层40包括红色滤光区域41、绿色滤光区域42以及透光区域43，彩色滤光层40的透光区域43与相应的透光孔300正对。彩色滤光层40的制作以保护层50、黄色荧光粉层30为衬底，即位于透光区域43的彩色滤光层40形成在保护层50、黑色矩阵层60的相应栅格围成的空间内，并填充透光孔300，位于红色滤光区域41、绿色滤光区域42的彩色滤光层40形成在黄色荧光粉层30与黑色矩阵层60的相应栅格围成的空间内。彩色滤光层40的制作主要经过光阻涂布-曝光-显影-烘烤，最后形成相应的滤光层，彩色滤光层40的不同的滤光区域采用不同的颜色的光阻制作而成。\n\n[0041]由于本发明的微型发光二极管均发出蓝光，并通过将其一次性地转印在基板上，然后利用该微型发光二极管激发黄色荧光粉层，再与出光方向上的彩色滤光层配合，即可实现彩色显示的目的，减少了发光二极管转移次数，工艺制程更加简化，降低了Micro LED的转移技术难度。\n\n[0042]以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微型发光二极管显示装置及其制作方法。\n\n背景技术\n\n[0002]Micro LED(微型发光二极管)技术，即LED微缩化矩阵化技术，指的是在一个芯片上集成高密度微小尺寸的LED阵列；LED显示屏每一个像素可定址、单独驱动点亮，MicroLED显示屏可看成是户外LED显示屏的微缩版，将像素点距离从毫米降低至微米级。\n\n[0003]Micro LED的优点非常多，它具有无机LED的高效率、高亮度、高可靠度及反应时间快等优点，并且具有自发光无需背光源的特性，更具有节能、体积小、机构简易等优势。\n\n[0004]通常，其制作方法为：先在蓝宝石类的基板上通过分子束外延生长出来LED微器件，然后把LED发光微器件转移到玻璃基板上。由于制作LED微器件的蓝宝石基板尺寸基本上就是硅晶元的尺寸，而制作显示器则是尺寸大得多的玻璃基板，因此必然需要进行多次转运。并且，制备红、绿、蓝阵列需要将发出红、绿、蓝三原色的LED晶粒分别从原始衬底转移到接收基板，由于涉及巨量的微小发光二极管精确转移，而且转移次数多，因此转移过程所需时间长，实施技术难度相当大。\n\n发明内容\n\n[0005]鉴于现有技术存在的不足，本发明提供了一种减少发光二极管转移次数，降低Micro LED转移技术难度的微型发光二极管显示装置及其制作方法。\n\n[0006]为了实现上述的目的，本发明采用了如下的技术方案：\n\n[0007]一种微型发光二极管显示装置，包括基板、阵列设置在所述基板上表面且用于发出蓝光的微型发光二极管、设于所述微型发光二极管出光侧的黄色荧光粉层以及设于所述黄色荧光粉层出光侧的彩色滤光层，所述彩色滤光层包括红色滤光区域、绿色滤光区域以及透光区域，所述黄色荧光粉层表面间隔地开设有透光孔，所述透光孔与所述透光区域正对。\n\n[0008]作为其中一种实施方式，每个所述微型发光二极管分别与一个所述红色滤光区域、绿色滤光区域或透光区域正对。\n\n[0009]作为其中一种实施方式，所述透光区域为透明的滤光区域。\n\n[0010]或者，所述透光区域为所述彩色滤光层上开设的贯穿孔。\n\n[0011]作为其中一种实施方式，所述贯穿孔内填充有无色透光材料，且所述无色透光材料表面与所述彩色滤光层表面平齐。\n\n[0012]作为其中一种实施方式，所述的微型发光二极管显示装置还包括保护层，所述保护层形成于所述基板上表面并覆盖所有的所述微型发光二极管，所述保护层的上表面为平面，所述黄色荧光粉层形成于所述保护层表面。\n\n[0013]作为其中一种实施方式，所述黄色荧光粉层设于所述保护层上表面，并与所述彩色滤光层的贴合。\n\n[0014]或者，所述黄色荧光粉层设于所述保护层上朝向所述微型发光二极管的表面，所述彩色滤光层与所述保护层上表面贴合。\n\n[0015]作为其中一种实施方式，所述的微型发光二极管显示装置还包括用于遮光的黑色矩阵层，所述彩色滤光层的红色滤光区域、绿色滤光区域和透光区域的每两个相邻的区域之间设有镂空的缝隙，所述黑色矩阵层填充于所述缝隙内。\n\n[0016]本发明的另一目的在于提供一种微型发光二极管显示装置的制作方法，包括：\n\n[0017]提供一基板；\n\n[0018]在所述基板上表面阵列形成用于发出蓝光的微型发光二极管；\n\n[0019]在所述基板上表面形成同时覆盖所述微型发光二极管和所述基板的保护层；\n\n[0020]在所述保护层上表面制作具有栅格状图案的黑色矩阵层；\n\n[0021]在所述保护层上表面形成填充在所述黑色矩阵层图案内的黄色荧光粉层，且所述黄色荧光粉层的表面间隔地形成透光孔，所述黄色荧光粉层的厚度小于所述黑色矩阵层的厚度；\n\n[0022]在所述黑色矩阵层图案内和所述透光孔内制作彩色滤光层，所述彩色滤光层包括红色滤光区域、绿色滤光区域以及透光区域，所述彩色滤光层的透光区域与相应的所述透光孔正对。\n\n[0023]本发明的微型发光二极管均发出蓝光，通过将其一次性地转印在基板上，然后利用该微型发光二极管激发黄色荧光粉层，再与出光方向上的彩色滤光层配合，即可实现彩色显示的目的，减少了发光二极管转移次数，工艺制程更加简化，降低了Micro LED的转移技术难度。\n\n附图说明\n\n[0024]图1为本发明实施例的一种微型发光二极管显示装置的结构示意图；\n\n[0025]图2为本发明实施例的一种微型发光二极管显示装置的制作过程示意图；\n\n[0026]图3为本发明实施例的一种微型发光二极管显示装置的制作方法示意图。\n\n具体实施方式\n\n[0027]为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。\n\n[0028]参阅图1，本发明实施例的微型发光二极管显示装置包括基板10、阵列设置在基板10上表面且用于发出蓝光的微型发光二极管20、设于微型发光二极管20出光侧的黄色荧光粉层30以及设于黄色荧光粉层30出光侧的彩色滤光层40，彩色滤光层40包括红色滤光区域41、绿色滤光区域42以及透光区域43，黄色荧光粉层30表面间隔地开设有透光孔300，透光孔300与透光区域43正对。\n\n[0029]由于本实施例的所有的微型发光二极管20都发出相同的蓝光，微型发光二极管20可以采用转印技术一次性地制作在阵列基板上，本实施例中，每个微型发光二极管20分别与一个红色滤光区域41、绿色滤光区域42或透光区域43正对，各区域下方正对的微型发光二极管20发出的蓝光先激发黄色荧光粉层30发出黄光，在红色滤光区域41与绿色滤光区域42所对应的显示区域，透过红色滤光区域41的黄光则发出红光，透过绿色滤光区域42的黄光则发出绿光；在透光区域43所对应的显示区域，微型发光二极管20发出的蓝光依次透过透光孔300、透光区域43发出。最终，透过彩色滤光层40射出的光线既有蓝色，又有绿色和红色，涵盖了三原色，通过控制各微型发光二极管20电流的大小即可控制每个像素点的光线强弱，即可实现彩色显示的目的。\n\n[0030]本实施例的微型发光二极管显示装置还具有保护层50，该保护层50形成于基板10上表面，并覆盖所有的微型发光二极管20，保护层50的上表面为平面，黄色荧光粉层30以涂覆等方式形成于保护层50的上表面，并与彩色滤光层40的贴合。需要注意的是，黄色荧光粉层30并非完全覆盖保护层50的上表面，黄色荧光粉层30的表面间隔地开设有透光孔300，透光孔300与透光区域43正对，以供蓝光光线直接透过，并自彩色滤光层40的透光区域43射出。\n\n[0031]另外，为防止相邻的两个像素之间串光，微型发光二极管显示装置还具有用于遮光的黑色矩阵层60，黑色矩阵层60的厚度等于黄色荧光粉层30、彩色滤光层40的厚度之和。彩色滤光层40的红色滤光区域41、绿色滤光区域42和透光区域43的每两个相邻的区域之间设有镂空的缝隙，黑色矩阵层60填充于该缝隙内，使得黑色矩阵层60遮挡于彩色滤光层40的每两个相邻的滤光区域之间，各滤光区域之间的光线互不干涉。这里，黑色矩阵层60的底端还延伸至填充黄色荧光粉层30的透光孔300，即黑色矩阵层60延伸至保护层50的上表面，可以保证自黄色荧光粉层30激发后射出的光线不从透光孔300底部的边缘进入到彩色滤光层40的透光区域43，进一步地提升了显示可靠性。\n\n[0032]在其他实施方式中，黄色荧光粉层30也可以改为设于保护层50上朝向微型发光二极管20的表面(即内表面)，彩色滤光层40底面与保护层50上表面贴合，黑色矩阵层60的厚度等于彩色滤光层40的厚度。\n\n[0033]彩色滤光层40的该透光区域43可以是透明的滤光区域，也可以是彩色滤光层40上开设的贯穿孔，该贯穿孔内可填充有无色透光材料，且无色透光材料表面与彩色滤光层40表面平齐，以保证彩色滤光层40、黑色矩阵层60的完整性和强度。\n\n[0034]结合图2和图3所示，本发明还提供了一种微型发光二极管显示装置的制作方法，包括：\n\n[0035]S01、提供一基板10，该基板10即薄膜晶体管阵列基板(TFT阵列基板)；\n\n[0036]S02、在基板10上表面阵列形成用于发出蓝光的微型发光二极管20，微型发光二极管20可以利用转移头固定到基板10上，然后再沉积透明导电膜，通过刻蚀工艺将透明导电膜制作成连接各微型发光二极管20的电极线；\n\n[0037]S03、在基板10上表面形成同时覆盖微型发光二极管20和基板10的保护层50，该保护层50作为封装层，同时，其具有平整的表面，还作为后续的黄色荧光粉层30、黑色矩阵层60的制作衬底；\n\n[0038]S04、在保护层50上表面制作具有栅格状图案的黑色矩阵层60，以防止不同颜色的光线串光发生混色而影响显示，其中，每个栅格对应一个微型发光二极管20及彩色滤光层40的一个滤光区域；\n\n[0039]S05、在保护层50上表面形成填充在黑色矩阵层60图案内的黄色荧光粉层30，且黄色荧光粉层30的表面间隔地形成透光孔300，黄色荧光粉层30的厚度小于黑色矩阵层60的厚度，以在黑色矩阵层60内预留出后续的彩色滤光层40的制作空间；\n\n[0040]S06、在黑色矩阵层60图案内和透光孔300内制作彩色滤光层40，彩色滤光层40包括红色滤光区域41、绿色滤光区域42以及透光区域43，彩色滤光层40的透光区域43与相应的透光孔300正对。彩色滤光层40的制作以保护层50、黄色荧光粉层30为衬底，即位于透光区域43的彩色滤光层40形成在保护层50、黑色矩阵层60的相应栅格围成的空间内，并填充透光孔300，位于红色滤光区域41、绿色滤光区域42的彩色滤光层40形成在黄色荧光粉层30与黑色矩阵层60的相应栅格围成的空间内。彩色滤光层40的制作主要经过光阻涂布-曝光-显影-烘烤，最后形成相应的滤光层，彩色滤光层40的不同的滤光区域采用不同的颜色的光阻制作而成。\n\n[0041]由于本发明的微型发光二极管均发出蓝光，并通过将其一次性地转印在基板上，然后利用该微型发光二极管激发黄色荧光粉层，再与出光方向上的彩色滤光层配合，即可实现彩色显示的目的，减少了发光二极管转移次数，工艺制程更加简化，降低了Micro LED的转移技术难度。\n\n[0042]以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10612, 23666, '技术领域\n\n[0001]本发明涉及液晶显示技术领域，特别是涉及一种基于分区背光的低延迟液晶显示装置及其驱动方法。\n\n背景技术\n\n[0002]显示终端的发展从单纯的图片展示逐渐过渡到视频显示，近年来随着流媒体的快速发展，人们对于显示器件的视频画质提出了更高的需求，在传统追求画质解析度、色彩还原性、对比度等基础上，视频播放对于显示器件再现动态画面也提出了新的技术要求，其中一个重要方面便是改善运动模糊。\n\n[0003]运动模糊从源头来说主要是显示器件有限的响应时间与人眼的视觉跟踪和空间分辨特性共同决定的，一般而言，4ms以上的响应主要是由显示器件的响应时间决定的。具体地，以LCD显示器件为例，IPS/FFS的响应时间通常为20-30ms，显示的时钟频率通常为60Hz。相邻帧间画面如有存在高速运动的物体，由于液晶的响应时间远长于帧间切换速率，因而会存在一定的视觉拖尾现象从而产生运动模糊。\n\n[0004]目前，运动模糊的解决方案主要包括：采用高频驱动、采用画面插黑、采用背光插黑等，其中高频驱动能够有效地解决画面模糊现象，同时在画质上没有不良的显示缺陷，但是高频驱动对于液晶的响应速率、驱动IC的数据量等产生新的硬件要求，而插黑技术能够利用人眼的视觉暂留效应改善运动模糊问题，但是同时会带来整体画面偏暗的问题。\n\n[0005]因此，针对上述技术问题，有必要提供一种基于分区背光的低延迟液晶显示装置及其驱动方法。\n\n发明内容\n\n[0006]为克服现有技术的不足，本发明的目的在于提供基于分区背光的低延迟液晶显示装置及其驱动方法。\n\n[0007]为了实现上述目的，本发明一实施例提供的技术方案如下：\n\n[0008]一种基于分区背光的低延迟液晶显示装置的驱动方法，所述液晶显示装置包括若干阵列分布的分区背光，所述驱动方法包括：\n\n[0009]S1、对显示屏主动阵列行列扫描，获取当前像素的图像灰阶，得到图像灰阶矩阵；\n\n[0010]S2、将图像灰阶矩阵根据显示装置的电光曲线进行归一化处理，得到显示驱动矩阵；\n\n[0011]S3、根据分区背光将显示驱动矩阵划分为一一对应的显示分区，并获取当前像素所处的显示分区的位置；\n\n[0012]S4、根据当前像素所处的显示分区的位置及显示驱动矩阵进行各显示分区的灰阶分布统计，根据各显示分区灰阶分布统计计算各显示分区点亮时的背光系数，并根据当前像素在显示分区中所处的位置及当前显示分区在显示驱动矩阵中所处的位置确定所需点亮的显示分区。\n\n[0013]作为本发明的进一步改进，所述步骤S4包括：\n\n[0014]S41、若当前像素（x，y）为所在显示分区的第一个像素，且所在显示分区为第m行显示分区的第一列时，关闭m行分区背光；\n\n[0015]S42、若当前像素（x，y）为当前显示分区的最后一个像素，根据各显示分区灰阶分布统计计算当前像素所在显示分区的背光系数Blu(m，n)。\n\n[0016]作为本发明的进一步改进，所述步骤S42还包括：\n\n[0017]若当前显示分区为第m行显示分区的最后一列，则点亮当前显示分区K行之前的分区背光；\n\n[0018]若当前像素（x，y）为当前帧最后一个像素时，将该显示分区上一帧的背光系数作为当前的背光系数。\n\n[0019]作为本发明的进一步改进，所述“K”值为：\n\n[0020]K=Integer(Tup*m/16.7)，其中，Tup为液晶的上升沿响应时间，Integer为取整操作。\n\n[0021]作为本发明的进一步改进，所述步骤S4中背光系数的计算方法为：\n\n[0022]统计当前显示分区内子像素的灰阶特征值分布，计算各显示分区的点亮系数，所述灰阶特征值包括子像素的灰阶最大值和灰阶平均值。\n\n[0023]作为本发明的进一步改进，所述驱动方法还包括：\n\n[0024]获取上一帧各显示分区的背光系数；\n\n[0025]计算当前像素在各显示分区背光全部点亮时的背光亮度；\n\n[0026]结合当前帧的显示驱动矩阵计算灰阶补偿信号并输出以点亮显示屏。\n\n[0027]作为本发明的进一步改进，所述步骤S2中的电光曲线为Gamma曲线，显示驱动矩阵为indata(x，y，3)=(gray/2^N)gamma，gray为图像灰阶，N为显示装置的bit数。\n\n[0028]作为本发明的进一步改进，所述显示驱动矩阵中Gamma的值为2.2。\n\n[0029]本发明另一实施例提供的技术方案如下：\n\n[0030]一种基于分区背光的低延迟液晶显示装置，所述液晶显示装置包括背光单元、显示屏、及驱动背光单元及显示屏的驱动单元，所述背光单元包括若干阵列分布的分区背光，所述驱动单元包括用于点亮背光单元的背光驱动单元、及用于点亮显示屏的液晶驱动单元，所述驱动单元通过上述的驱动方法进行液晶显示装置的驱动。\n\n[0031]作为本发明的进一步改进，所述背光单元包括若干阵列分布的Mini-LED光源。\n\n[0032]本发明根据液晶低速响应的特征，延迟一定的时间进行当前分区背光的点亮，使得背光点亮时该分区背光任意像素对应的液晶分子角度几乎偏转到该像素对应的灰阶电压，通过插黑技术显著改善液晶显示器件的响应时间；\n\n[0033]Mini-LED高亮度特点可以保证虽然背光仅在当前帧内点亮有限时间也能提供足够的亮度，避免了传统插黑技术因背光源亮度限制所带来的显示器件亮度不足问题，同时也解决了Mini-LED面光源在小电流驱动的不稳定特征。\n\n附图说明\n\n[0034]为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明中记载的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0035]图1为本发明基于分区背光的低延迟液晶显示装置的驱动方法的流程图。\n\n[0036]图2a为本发明实施例1中液晶显示装置的结构示意图，图2b为本发明实施例1中背光单元的示意图。\n\n[0037]图3为本发明中实施例2中低延迟液晶显示装置的驱动方法的流程图。\n\n[0038]图4为本发明驱动方法中增加背光亮度的原理图。\n\n具体实施方式\n\n[0039]为了使本技术领域的人员更好地理解本发明中的技术方案，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都应当属于本发明保护的范围。\n\n[0040]本发明公开了一种基于分区背光的低延迟液晶显示装置，液晶显示装置包括背光单元、显示屏、及驱动背光单元及显示屏的驱动单元，背光单元包括若干阵列分布的分区背光，驱动单元包括用于点亮背光单元的背光驱动单元、及用于点亮显示屏的液晶驱动单元。\n\n[0041]相应地，参图1所示，本发明还公开了一种基于分区背光的低延迟液晶显示装置的驱动方法，该驱动方法包括：\n\n[0042]S1、对显示屏主动阵列行列扫描，获取当前像素的图像灰阶，得到图像灰阶矩阵；\n\n[0043]S2、将图像灰阶矩阵根据显示装置的电光曲线进行归一化处理，得到显示驱动矩阵；\n\n[0044]S3、根据分区背光将显示驱动矩阵划分为一一对应的显示分区，并获取当前像素所处的显示分区的位置；\n\n[0045]S4、根据当前像素所处的显示分区的位置及显示驱动矩阵进行各显示分区的灰阶分布统计，根据各显示分区灰阶分布统计计算各显示分区点亮时的背光系数，并根据当前像素在显示分区中所处的位置及当前显示分区在显示驱动矩阵中所处的位置确定所需点亮的显示分区。\n\n[0046]其中，步骤S4包括：\n\n[0047]S41、若当前像素（x，y）为所在显示分区的第一个像素，且所在显示分区为第m行显示分区的第一列时，关闭m行分区背光；\n\n[0048]S42、若当前像素（x，y）为当前显示分区的最后一个像素，根据各显示分区灰阶分布统计计算当前像素所在显示分区的背光系数Blu(m，n)。\n\n[0049]步骤S42还包括：\n\n[0050]若当前显示分区为第m行显示分区的最后一列，则点亮当前显示分区K行之前的分区背光；\n\n[0051]若当前像素（x，y）为当前帧最后一个像素时，将该显示分区上一帧的背光系数作为当前的背光系数。\n\n[0052]以下结合具体实施例对本发明作进一步说明。\n\n[0053]实施例1：\n\n[0054]参图2a、图2b所示，本实施例中的液晶显示装置包括背光单元10、阵列基板20、液晶层30、像素层40、彩膜基板50、及偏振片60，另外，还包括用于点亮背光单元20的背光驱动单元、及用于点亮显示屏（液晶层30等）的液晶驱动单元。\n\n[0055]其中，背光单元10采用2D分区设计，包括若干阵列分布的分区背光，横向和纵向分区数分别为M和N，显示屏与分区背光一一对应，显示屏对应划分为若干显示分区。\n\n[0056]本实施例中，在分区背光的设计上，采用巨量小尺寸Mini-LED阵列作为光源，一方面兼顾了轻薄的优势，同时Mini-LED的高亮度特点可以保证虽然背光仅在当前帧内点亮有限时间也能提供足够的亮度，避免了传统插黑技术因背光源亮度限制所带来的显示器件亮度不足问题，同时也解决了Mini-LED面光源在小电流驱动的不稳定特征（可以根据点亮占空比相应提升点亮时间内的驱动电流）。\n\n[0057]实施例2：\n\n[0058]参图3所示，本实施例中基于分区背光的低延迟液晶显示装置的驱动方法，具体包括：\n\n[0059]S1、对显示屏主动阵列行列扫描，获取当前像素的图像灰阶，得到图像灰阶矩阵。\n\n[0060]其中，图像灰阶为gray(x，y，3)，其中x∈[1，height]，y∈[1，width]，height、width分别定义为图像的高度与宽度，3分别代表R/G/B三个通道。\n\n[0061]S2、将图像灰阶矩阵根据显示装置的电光曲线EOTF进行归一化处理，得到显示驱动矩阵。\n\n[0062]优选地，电光曲线为Gamma曲线，显示驱动矩阵为indata(x，y，3)=(gray/2^N)gamma，本实施例中的gamma取值为2.2，N为显示装置的bit数，如6、8、10bit等。\n\n[0063]S3、根据分区背光将显示驱动矩阵indata划分为一一对应的显示分区，并获取当前像素（x，y）所处的显示分区的位置（m，n）。\n\n[0064]S4、根据当前像素所处的显示分区的位置及显示驱动矩阵indata进行各显示分区的灰阶分布统计HISTM*N，根据各显示分区灰阶分布统计计算各显示分区点亮时的背光系数，并根据当前像素在显示分区中所处的位置及当前显示分区在显示驱动矩阵中所处的位置确定所需点亮的显示分区。\n\n[0065]该步骤主要实现两个目的，一个是计算各个分区背光的背光系数，另一个是决定点亮哪个分区背光（即实现哪个显示分区的显示）。\n\n[0066]具体地，步骤S4包括：\n\n[0067]S41、若当前像素（x，y）为所在显示分区的第一个像素，且所在显示分区为第m行显示分区的第一列时，即Blu(m，1)，关闭m行分区背光；\n\n[0068]S42、若当前像素（x，y）为当前显示分区的最后一个像素，根据各显示分区灰阶分布统计HISTM*N计算当前像素所在显示分区的背光系数Blu(m，n)，其中，m∈[1，M]，n∈[1，N]。\n\n[0069]其中，步骤S42进一步还包括：\n\n[0070]S421、若当前显示分区为第m行显示分区的最后一列，即Blu(m，N），则点亮当前显示分区K行之前的分区背光，即背光系数为Blu(m-K，n)，n=1…N分区背光；\n\n[0071]S422、若当前像素（x，y）为当前帧最后一个像素时，将该显示分区上一帧的背光系数作为当前的背光系数，即赋值Blu_last(m，n)=Blu(m，n)。\n\n[0072]另外，步骤S4中背光系数的计算方法为：\n\n[0073]统计当前显示分区内子像素的灰阶特征值分布，计算各显示分区的点亮系数，灰阶特征值包括子像素的灰阶最大值和灰阶平均值等，此处不作具体限定。\n\n[0074]本实施例中K的取值一般参考液晶的响应时间、帧频与分区数，如以60Hz显示屏为例，一帧显示的时间为16.7ms， 则每一行分区背光的扫描时间约为16.7/m（ms）。假设液晶的上升沿响应时间为Tup，则通常设定当前显示像素驱动IC打开Tup之后点亮背光，因而延迟K≈Integer(Tup*m/16.7)，其中Integer为取整操作。另外， K可以进一步根据画质显示需要进行其他设定。\n\n[0075]另外，本实施例中的驱动方法还包括：\n\n[0076]S51、获取上一帧各显示分区的背光系数Blu_last(m，n)， 其中，m∈[1，M]，n∈[1，N]；\n\n[0077]S52、计算当前像素在各显示分区背光全部点亮时的背光亮度；\n\n[0078]S53、结合步骤S2得到的当前帧的显示驱动矩阵indata(x，y，3)计算灰阶补偿信号outdata(height，width，3)，并输出至驱动IC（液晶驱动单元）以点亮显示屏，实现灰阶补偿，提高显示效果。\n\n[0079]从原理上而言，对于任意显示分区，扫描至所在m行显示分区的第一个像素时关闭当前行分区背光，此时液晶分子在驱动电压的作用下开始逐渐偏转至期望角度，期间花费的时间约为Tup。在K行延迟之后，上述分区背光打开，此时液晶分子基本已偏转至预定角度，因而能够在视觉上实现快速响应，能够显著改善传统液晶显示器的高延迟与运动模糊问题。\n\n[0080]其中，采用巨量Mini-LED作为发光源，因而具有低混光距离、窄边框、高光效的优势。由于采用巨量Mini-LED阵列作为光源，传统LED的驱动电流为20mA，巨量Mini-LED的存在使得任意Mini-LED作为背光源其驱动电流原小于20mA，通常仅为1mA左右，因而具有驱动不稳定的问题。\n\n[0081]从驱动方式上而言，传统分区背光算法上需要统计完该分区内的灰阶统计分布后才能决定当前分区的背光系数，因而无法实现在当前帧实时点亮当前分区背光（策略上通常采用上一帧的计算结果作为当前帧背光系数），具有一帧的系统延迟，在快速画面切换时无法做到背光同步。\n\n[0082]而本发明采用上述驱动方法，在任意一帧画面内的任意分区，分区背光亮度在一帧画面内延迟K行后点亮，也即始终经历由一段背光全关的纯黑态和背光点亮时间，从人眼视觉感知上不可避免地会带来视觉亮度的降低。为解决上述问题，也即保持与传统正常持续点亮背光相同的视觉亮度，可以根据驱动方法中背光实际点亮的占空比反向增加点亮区间的背光亮度（也即增加驱动电流），具体原理示意图参考图4所示，一方面充分利用Mini-LED面光源高亮度的特点，同时在一定程度上增加了任意分区背光的驱动电流，具有稳定亮度的优点。\n\n[0083]本实施例中的任意分区背光的背光系数均是在延迟K行分区之后进行点亮，因而能够采用一帧时间内的灰阶统计分布点亮背光，而非采用传统分区背光驱动方法完全采用上一帧的灰阶统计分布作为当前帧的背光系数，能够更好地适应快速变化的场景切换，避免画面出现延迟与不连续现象。\n\n[0084]本发明实施例还提供一种电子设备。所述电子设备包括至少一个处理器和与所述至少一个处理器连接的存储器，所述存储器用于存储可被所述至少一个处理器执行的指令，所述指令被所述至少一个处理器执行时，使所述至少一个处理器执行上述实施例中的驱动方法。\n\n[0085]本发明实施例还提供了一种非暂态存储介质，存储有计算机可执行指令，所述计算机可执行指令设置为执行上述的驱动方法。\n\n[0086]本发明实施例还提供了一种计算机程序产品，所述计算机程序产品包括存储在非暂态计算机可读存储介质上的计算机程序，所述计算机程序包括程序指令，当所述程序指令被计算机执行时，使所述计算机执行上述的驱动方法。\n\n[0087]本发明实施例提供的液晶显示装置可执行本发明任意实施例所提供的驱动方法，具备执行方法相应的功能模块和有益效果。未在上述实施例中详尽描述的技术细节，可参见本发明任意实施例所提供的驱动方法。\n\n[0088]与现有技术相比，本发明具有以下有益效果：\n\n[0089]根据液晶低速响应的特征，延迟一定的时间进行当前分区背光的点亮，使得背光点亮时该分区背光任意像素对应的液晶分子角度几乎偏转到该像素对应的灰阶电压，通过插黑技术显著改善液晶显示器件的响应时间；\n\n[0090]Mini-LED高亮度特点可以保证虽然背光仅在当前帧内点亮有限时间也能提供足够的亮度，避免了传统插黑技术因背光源亮度限制所带来的显示器件亮度不足问题，同时也解决了Mini-LED面光源在小电流驱动的不稳定特征。\n\n[0091]对于本领域技术人员而言，显然本发明不限于上述示范性实施例的细节，而且在不背离本发明的精神或基本特征的情况下，能够以其他的具体形式实现本发明。因此，无论从哪一点来看，均应将实施例看作是示范性的，而且是非限制性的，本发明的范围由所附权利要求而不是上述说明限定，因此旨在将落在权利要求的等同要件的含义和范围内的所有变化囊括在本发明内。不应将权利要求中的任何附图标记视为限制所涉及的权利要求。\n\n[0092]此外，应当理解，虽然本说明书按照实施方式加以描述，但并非每个实施方式仅包含一个独立的技术方案，说明书的这种叙述方式仅仅是为清楚起见，本领域技术人员应当将说明书作为一个整体，各实施例中的技术方案也可以经适当组合，形成本领域技术人员可以理解的其他实施方式。', '技术领域\n\n[0001]本发明涉及液晶显示技术领域，特别是涉及一种基于分区背光的低延迟液晶显示装置及其驱动方法。\n\n背景技术\n\n[0002]显示终端的发展从单纯的图片展示逐渐过渡到视频显示，近年来随着流媒体的快速发展，人们对于显示器件的视频画质提出了更高的需求，在传统追求画质解析度、色彩还原性、对比度等基础上，视频播放对于显示器件再现动态画面也提出了新的技术要求，其中一个重要方面便是改善运动模糊。\n\n[0003]运动模糊从源头来说主要是显示器件有限的响应时间与人眼的视觉跟踪和空间分辨特性共同决定的，一般而言，4ms以上的响应主要是由显示器件的响应时间决定的。具体地，以LCD显示器件为例，IPS/FFS的响应时间通常为20-30ms，显示的时钟频率通常为60Hz。相邻帧间画面如有存在高速运动的物体，由于液晶的响应时间远长于帧间切换速率，因而会存在一定的视觉拖尾现象从而产生运动模糊。\n\n[0004]目前，运动模糊的解决方案主要包括：采用高频驱动、采用画面插黑、采用背光插黑等，其中高频驱动能够有效地解决画面模糊现象，同时在画质上没有不良的显示缺陷，但是高频驱动对于液晶的响应速率、驱动IC的数据量等产生新的硬件要求，而插黑技术能够利用人眼的视觉暂留效应改善运动模糊问题，但是同时会带来整体画面偏暗的问题。\n\n[0005]因此，针对上述技术问题，有必要提供一种基于分区背光的低延迟液晶显示装置及其驱动方法。\n\n发明内容\n\n[0006]为克服现有技术的不足，本发明的目的在于提供基于分区背光的低延迟液晶显示装置及其驱动方法。\n\n[0007]为了实现上述目的，本发明一实施例提供的技术方案如下：\n\n[0008]一种基于分区背光的低延迟液晶显示装置的驱动方法，所述液晶显示装置包括若干阵列分布的分区背光，所述驱动方法包括：\n\n[0009]S1、对显示屏主动阵列行列扫描，获取当前像素的图像灰阶，得到图像灰阶矩阵；\n\n[0010]S2、将图像灰阶矩阵根据显示装置的电光曲线进行归一化处理，得到显示驱动矩阵；\n\n[0011]S3、根据分区背光将显示驱动矩阵划分为一一对应的显示分区，并获取当前像素所处的显示分区的位置；\n\n[0012]S4、根据当前像素所处的显示分区的位置及显示驱动矩阵进行各显示分区的灰阶分布统计，根据各显示分区灰阶分布统计计算各显示分区点亮时的背光系数，并根据当前像素在显示分区中所处的位置及当前显示分区在显示驱动矩阵中所处的位置确定所需点亮的显示分区。\n\n[0013]作为本发明的进一步改进，所述步骤S4包括：\n\n[0014]S41、若当前像素（x，y）为所在显示分区的第一个像素，且所在显示分区为第m行显示分区的第一列时，关闭m行分区背光；\n\n[0015]S42、若当前像素（x，y）为当前显示分区的最后一个像素，根据各显示分区灰阶分布统计计算当前像素所在显示分区的背光系数Blu(m，n)。\n\n[0016]作为本发明的进一步改进，所述步骤S42还包括：\n\n[0017]若当前显示分区为第m行显示分区的最后一列，则点亮当前显示分区K行之前的分区背光；\n\n[0018]若当前像素（x，y）为当前帧最后一个像素时，将该显示分区上一帧的背光系数作为当前的背光系数。\n\n[0019]作为本发明的进一步改进，所述“K”值为：\n\n[0020]K=Integer(Tup*m/16.7)，其中，Tup为液晶的上升沿响应时间，Integer为取整操作。\n\n[0021]作为本发明的进一步改进，所述步骤S4中背光系数的计算方法为：\n\n[0022]统计当前显示分区内子像素的灰阶特征值分布，计算各显示分区的点亮系数，所述灰阶特征值包括子像素的灰阶最大值和灰阶平均值。\n\n[0023]作为本发明的进一步改进，所述驱动方法还包括：\n\n[0024]获取上一帧各显示分区的背光系数；\n\n[0025]计算当前像素在各显示分区背光全部点亮时的背光亮度；\n\n[0026]结合当前帧的显示驱动矩阵计算灰阶补偿信号并输出以点亮显示屏。\n\n[0027]作为本发明的进一步改进，所述步骤S2中的电光曲线为Gamma曲线，显示驱动矩阵为indata(x，y，3)=(gray/2^N)gamma，gray为图像灰阶，N为显示装置的bit数。\n\n[0028]作为本发明的进一步改进，所述显示驱动矩阵中Gamma的值为2.2。\n\n[0029]本发明另一实施例提供的技术方案如下：\n\n[0030]一种基于分区背光的低延迟液晶显示装置，所述液晶显示装置包括背光单元、显示屏、及驱动背光单元及显示屏的驱动单元，所述背光单元包括若干阵列分布的分区背光，所述驱动单元包括用于点亮背光单元的背光驱动单元、及用于点亮显示屏的液晶驱动单元，所述驱动单元通过上述的驱动方法进行液晶显示装置的驱动。\n\n[0031]作为本发明的进一步改进，所述背光单元包括若干阵列分布的Mini-LED光源。\n\n[0032]本发明根据液晶低速响应的特征，延迟一定的时间进行当前分区背光的点亮，使得背光点亮时该分区背光任意像素对应的液晶分子角度几乎偏转到该像素对应的灰阶电压，通过插黑技术显著改善液晶显示器件的响应时间；\n\n[0033]Mini-LED高亮度特点可以保证虽然背光仅在当前帧内点亮有限时间也能提供足够的亮度，避免了传统插黑技术因背光源亮度限制所带来的显示器件亮度不足问题，同时也解决了Mini-LED面光源在小电流驱动的不稳定特征。\n\n附图说明\n\n[0034]为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明中记载的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0035]图1为本发明基于分区背光的低延迟液晶显示装置的驱动方法的流程图。\n\n[0036]图2a为本发明实施例1中液晶显示装置的结构示意图，图2b为本发明实施例1中背光单元的示意图。\n\n[0037]图3为本发明中实施例2中低延迟液晶显示装置的驱动方法的流程图。\n\n[0038]图4为本发明驱动方法中增加背光亮度的原理图。\n\n具体实施方式\n\n[0039]为了使本技术领域的人员更好地理解本发明中的技术方案，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都应当属于本发明保护的范围。\n\n[0040]本发明公开了一种基于分区背光的低延迟液晶显示装置，液晶显示装置包括背光单元、显示屏、及驱动背光单元及显示屏的驱动单元，背光单元包括若干阵列分布的分区背光，驱动单元包括用于点亮背光单元的背光驱动单元、及用于点亮显示屏的液晶驱动单元。\n\n[0041]相应地，参图1所示，本发明还公开了一种基于分区背光的低延迟液晶显示装置的驱动方法，该驱动方法包括：\n\n[0042]S1、对显示屏主动阵列行列扫描，获取当前像素的图像灰阶，得到图像灰阶矩阵；\n\n[0043]S2、将图像灰阶矩阵根据显示装置的电光曲线进行归一化处理，得到显示驱动矩阵；\n\n[0044]S3、根据分区背光将显示驱动矩阵划分为一一对应的显示分区，并获取当前像素所处的显示分区的位置；\n\n[0045]S4、根据当前像素所处的显示分区的位置及显示驱动矩阵进行各显示分区的灰阶分布统计，根据各显示分区灰阶分布统计计算各显示分区点亮时的背光系数，并根据当前像素在显示分区中所处的位置及当前显示分区在显示驱动矩阵中所处的位置确定所需点亮的显示分区。\n\n[0046]其中，步骤S4包括：\n\n[0047]S41、若当前像素（x，y）为所在显示分区的第一个像素，且所在显示分区为第m行显示分区的第一列时，关闭m行分区背光；\n\n[0048]S42、若当前像素（x，y）为当前显示分区的最后一个像素，根据各显示分区灰阶分布统计计算当前像素所在显示分区的背光系数Blu(m，n)。\n\n[0049]步骤S42还包括：\n\n[0050]若当前显示分区为第m行显示分区的最后一列，则点亮当前显示分区K行之前的分区背光；\n\n[0051]若当前像素（x，y）为当前帧最后一个像素时，将该显示分区上一帧的背光系数作为当前的背光系数。\n\n[0052]以下结合具体实施例对本发明作进一步说明。\n\n[0053]实施例1：\n\n[0054]参图2a、图2b所示，本实施例中的液晶显示装置包括背光单元10、阵列基板20、液晶层30、像素层40、彩膜基板50、及偏振片60，另外，还包括用于点亮背光单元20的背光驱动单元、及用于点亮显示屏（液晶层30等）的液晶驱动单元。\n\n[0055]其中，背光单元10采用2D分区设计，包括若干阵列分布的分区背光，横向和纵向分区数分别为M和N，显示屏与分区背光一一对应，显示屏对应划分为若干显示分区。\n\n[0056]本实施例中，在分区背光的设计上，采用巨量小尺寸Mini-LED阵列作为光源，一方面兼顾了轻薄的优势，同时Mini-LED的高亮度特点可以保证虽然背光仅在当前帧内点亮有限时间也能提供足够的亮度，避免了传统插黑技术因背光源亮度限制所带来的显示器件亮度不足问题，同时也解决了Mini-LED面光源在小电流驱动的不稳定特征（可以根据点亮占空比相应提升点亮时间内的驱动电流）。\n\n[0057]实施例2：\n\n[0058]参图3所示，本实施例中基于分区背光的低延迟液晶显示装置的驱动方法，具体包括：\n\n[0059]S1、对显示屏主动阵列行列扫描，获取当前像素的图像灰阶，得到图像灰阶矩阵。\n\n[0060]其中，图像灰阶为gray(x，y，3)，其中x∈[1，height]，y∈[1，width]，height、width分别定义为图像的高度与宽度，3分别代表R/G/B三个通道。\n\n[0061]S2、将图像灰阶矩阵根据显示装置的电光曲线EOTF进行归一化处理，得到显示驱动矩阵。\n\n[0062]优选地，电光曲线为Gamma曲线，显示驱动矩阵为indata(x，y，3)=(gray/2^N)gamma，本实施例中的gamma取值为2.2，N为显示装置的bit数，如6、8、10bit等。\n\n[0063]S3、根据分区背光将显示驱动矩阵indata划分为一一对应的显示分区，并获取当前像素（x，y）所处的显示分区的位置（m，n）。\n\n[0064]S4、根据当前像素所处的显示分区的位置及显示驱动矩阵indata进行各显示分区的灰阶分布统计HISTM*N，根据各显示分区灰阶分布统计计算各显示分区点亮时的背光系数，并根据当前像素在显示分区中所处的位置及当前显示分区在显示驱动矩阵中所处的位置确定所需点亮的显示分区。\n\n[0065]该步骤主要实现两个目的，一个是计算各个分区背光的背光系数，另一个是决定点亮哪个分区背光（即实现哪个显示分区的显示）。\n\n[0066]具体地，步骤S4包括：\n\n[0067]S41、若当前像素（x，y）为所在显示分区的第一个像素，且所在显示分区为第m行显示分区的第一列时，即Blu(m，1)，关闭m行分区背光；\n\n[0068]S42、若当前像素（x，y）为当前显示分区的最后一个像素，根据各显示分区灰阶分布统计HISTM*N计算当前像素所在显示分区的背光系数Blu(m，n)，其中，m∈[1，M]，n∈[1，N]。\n\n[0069]其中，步骤S42进一步还包括：\n\n[0070]S421、若当前显示分区为第m行显示分区的最后一列，即Blu(m，N），则点亮当前显示分区K行之前的分区背光，即背光系数为Blu(m-K，n)，n=1…N分区背光；\n\n[0071]S422、若当前像素（x，y）为当前帧最后一个像素时，将该显示分区上一帧的背光系数作为当前的背光系数，即赋值Blu_last(m，n)=Blu(m，n)。\n\n[0072]另外，步骤S4中背光系数的计算方法为：\n\n[0073]统计当前显示分区内子像素的灰阶特征值分布，计算各显示分区的点亮系数，灰阶特征值包括子像素的灰阶最大值和灰阶平均值等，此处不作具体限定。\n\n[0074]本实施例中K的取值一般参考液晶的响应时间、帧频与分区数，如以60Hz显示屏为例，一帧显示的时间为16.7ms， 则每一行分区背光的扫描时间约为16.7/m（ms）。假设液晶的上升沿响应时间为Tup，则通常设定当前显示像素驱动IC打开Tup之后点亮背光，因而延迟K≈Integer(Tup*m/16.7)，其中Integer为取整操作。另外， K可以进一步根据画质显示需要进行其他设定。\n\n[0075]另外，本实施例中的驱动方法还包括：\n\n[0076]S51、获取上一帧各显示分区的背光系数Blu_last(m，n)， 其中，m∈[1，M]，n∈[1，N]；\n\n[0077]S52、计算当前像素在各显示分区背光全部点亮时的背光亮度；\n\n[0078]S53、结合步骤S2得到的当前帧的显示驱动矩阵indata(x，y，3)计算灰阶补偿信号outdata(height，width，3)，并输出至驱动IC（液晶驱动单元）以点亮显示屏，实现灰阶补偿，提高显示效果。\n\n[0079]从原理上而言，对于任意显示分区，扫描至所在m行显示分区的第一个像素时关闭当前行分区背光，此时液晶分子在驱动电压的作用下开始逐渐偏转至期望角度，期间花费的时间约为Tup。在K行延迟之后，上述分区背光打开，此时液晶分子基本已偏转至预定角度，因而能够在视觉上实现快速响应，能够显著改善传统液晶显示器的高延迟与运动模糊问题。\n\n[0080]其中，采用巨量Mini-LED作为发光源，因而具有低混光距离、窄边框、高光效的优势。由于采用巨量Mini-LED阵列作为光源，传统LED的驱动电流为20mA，巨量Mini-LED的存在使得任意Mini-LED作为背光源其驱动电流原小于20mA，通常仅为1mA左右，因而具有驱动不稳定的问题。\n\n[0081]从驱动方式上而言，传统分区背光算法上需要统计完该分区内的灰阶统计分布后才能决定当前分区的背光系数，因而无法实现在当前帧实时点亮当前分区背光（策略上通常采用上一帧的计算结果作为当前帧背光系数），具有一帧的系统延迟，在快速画面切换时无法做到背光同步。\n\n[0082]而本发明采用上述驱动方法，在任意一帧画面内的任意分区，分区背光亮度在一帧画面内延迟K行后点亮，也即始终经历由一段背光全关的纯黑态和背光点亮时间，从人眼视觉感知上不可避免地会带来视觉亮度的降低。为解决上述问题，也即保持与传统正常持续点亮背光相同的视觉亮度，可以根据驱动方法中背光实际点亮的占空比反向增加点亮区间的背光亮度（也即增加驱动电流），具体原理示意图参考图4所示，一方面充分利用Mini-LED面光源高亮度的特点，同时在一定程度上增加了任意分区背光的驱动电流，具有稳定亮度的优点。\n\n[0083]本实施例中的任意分区背光的背光系数均是在延迟K行分区之后进行点亮，因而能够采用一帧时间内的灰阶统计分布点亮背光，而非采用传统分区背光驱动方法完全采用上一帧的灰阶统计分布作为当前帧的背光系数，能够更好地适应快速变化的场景切换，避免画面出现延迟与不连续现象。\n\n[0084]本发明实施例还提供一种电子设备。所述电子设备包括至少一个处理器和与所述至少一个处理器连接的存储器，所述存储器用于存储可被所述至少一个处理器执行的指令，所述指令被所述至少一个处理器执行时，使所述至少一个处理器执行上述实施例中的驱动方法。\n\n[0085]本发明实施例还提供了一种非暂态存储介质，存储有计算机可执行指令，所述计算机可执行指令设置为执行上述的驱动方法。\n\n[0086]本发明实施例还提供了一种计算机程序产品，所述计算机程序产品包括存储在非暂态计算机可读存储介质上的计算机程序，所述计算机程序包括程序指令，当所述程序指令被计算机执行时，使所述计算机执行上述的驱动方法。\n\n[0087]本发明实施例提供的液晶显示装置可执行本发明任意实施例所提供的驱动方法，具备执行方法相应的功能模块和有益效果。未在上述实施例中详尽描述的技术细节，可参见本发明任意实施例所提供的驱动方法。\n\n[0088]与现有技术相比，本发明具有以下有益效果：\n\n[0089]根据液晶低速响应的特征，延迟一定的时间进行当前分区背光的点亮，使得背光点亮时该分区背光任意像素对应的液晶分子角度几乎偏转到该像素对应的灰阶电压，通过插黑技术显著改善液晶显示器件的响应时间；\n\n[0090]Mini-LED高亮度特点可以保证虽然背光仅在当前帧内点亮有限时间也能提供足够的亮度，避免了传统插黑技术因背光源亮度限制所带来的显示器件亮度不足问题，同时也解决了Mini-LED面光源在小电流驱动的不稳定特征。\n\n[0091]对于本领域技术人员而言，显然本发明不限于上述示范性实施例的细节，而且在不背离本发明的精神或基本特征的情况下，能够以其他的具体形式实现本发明。因此，无论从哪一点来看，均应将实施例看作是示范性的，而且是非限制性的，本发明的范围由所附权利要求而不是上述说明限定，因此旨在将落在权利要求的等同要件的含义和范围内的所有变化囊括在本发明内。不应将权利要求中的任何附图标记视为限制所涉及的权利要求。\n\n[0092]此外，应当理解，虽然本说明书按照实施方式加以描述，但并非每个实施方式仅包含一个独立的技术方案，说明书的这种叙述方式仅仅是为清楚起见，本领域技术人员应当将说明书作为一个整体，各实施例中的技术方案也可以经适当组合，形成本领域技术人员可以理解的其他实施方式。');
INSERT INTO `os_patent_instruction_text` VALUES (10613, 23667, '技术领域\n\n[0001]本发明涉及液晶显示技术领域，尤其涉及一种柔性液晶显示器及其背光源。\n\n背景技术\n\n[0002]柔性显示器是用柔性材料制成的可弯曲的显示装置。柔性显示器具有厚度薄、体积小、轻便、易携带、可弯曲、节能环保、个性时尚等优点。因此，柔性显示器将会在显示技术领域得到快速发展。目前柔性显示器主要有OLED和LCD两种。虽然OLED可以很好的解决柔性的问题，但是和相对成熟的LCD相比，还存在诸多急需解决的问题：例如，OLED在发光均匀性、发光效率等方面还存在很多问题；OLED在制程上难以大面积制备、对水和氧气等敏感，而大部分柔性衬底以及目前的封装技术都没有足够能力充分阻挡外界的杂质和气体,这将会极大地影响其发光性能和良品率。LCD是非自身发光的特性，需要背光模组来提供光源，LCD的背光模组主要包括侧光式和直下式，其中，侧入式背光模组中存在LED与导光板在侧边的耦合效率低、弯曲时的光的均匀性的问题；而直下式背光模组主要是厚度较厚，难以做成弯曲的柔性屏且在弯曲过程中容易造成器件的断裂。因此，要想制备大尺寸的柔性LCD，需要提供一种发光均匀的柔性背光模组。\n\n发明内容\n\n[0003]为了解决现有技术的不足，本发明提供的柔性液晶显示器及其背光源，能够解决柔性液晶显示器中侧入式背光模组发光不均匀的问题以及直下式背光模组中不易弯曲且在弯曲过程中容易造成器件断裂的问题。\n\n[0004]本发明提出的具体技术方案为：提供一种背光源，所述背光源包括多个发光二极管，每一个所述发光二极管包括基板、透明外罩及发光二极管芯片，所述发光二极管芯片设置于所述基板上，所述透明外罩用于对所述发光二极管芯片进行封装，所述发光二极管芯片包括衬底、依次叠层设于所述衬底上的第一电极、P型半导体层、N型半导体层、第二电极，所述P型半导体层包括基质及填充于所述基质中的半导体结构阵列，所述半导体结构阵列包括阵列排布的多个半导体结构。\n\n[0005]进一步地，所述半导体结构的材质为硅，所述N型半导体层的材质为氧化锌。\n\n[0006]进一步地，所述半导体结构为微米柱状结构。\n\n[0007]进一步地，所述透明外罩朝向所述发光二极管芯片的一面设置有荧光粉层，所述荧光粉层受激发发射黄光。\n\n[0008]进一步地，所述P型半导体层的厚度为100～200nm，所述N型半导体层的厚度为300～400nm。\n\n[0009]本发明还提供了一种柔性液晶显示器，所述柔性液晶显示器包括背光模组，所述背光模组包括光学膜片组及如上任一所述的背光源，所述光学膜片组设于所述背光源的出光侧。\n\n[0010]进一步地，所述光学膜片组包括扩散板、扩散片和增亮膜，所述背光源发出的光线依次经过所述扩散板、扩散片、增亮膜后出射。\n\n[0011]进一步地，所述扩散片包括多个扩散粒子，每一个所述扩散粒子包括第一折射层、第二折射层及第三折射层，所述第三折射层位于所述第一折射层与所述第二折射层之间，所述第三折射层的折射率与所述第一折射层、第二折射层的折射率不相等。\n\n[0012]进一步地，多个扩散粒子的粒径为150～700nm。\n\n[0013]进一步地，所述第三折射层的材质为二氧化硅，所述第一折射层、第二折射层的材质均选自聚对苯二甲酸乙醇酯、聚醚酯、聚苯乙烯、聚甲基丙烯酸甲酯、聚碳酸酯中的一种。\n\n[0014]本发明提出的柔性液晶显示器及其背光源，所述背光源包括多个发光二极管，每一个所述发光二极管包括基板、透明外罩及发光二极管芯片，所述发光二极管芯片中的P型半导体层包括基质及填充于所述基质中的半导体结构阵列，所述半导体结构阵列包括阵列排布的多个半导体结构，通过半导体结构阵列可以在弯曲过程中提升发光二极管芯片的发光均匀性，同时，通过在基质中填充半导体结构阵列，减少了在弯曲过程中半导体结构阵列受到的应力，从而避免半导体层发生断裂。\n\n附图说明\n\n[0015]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0016]图1为实施例1中柔性液晶显示器的结构示意图；\n\n[0017]图2为实施例1中发光二极管芯片的结构示意图；\n\n[0018]图3为实施例1中光学膜片组的结构示意图；\n\n[0019]图4为实施例1中扩散粒子的结构示意图；\n\n[0020]图5为实施例2中柔性液晶显示器的结构示意图。\n\n具体实施方式\n\n[0021]以下，将参照附图来详细描述本发明的实施例。然而，可以以许多不同的形式来实施本发明，并且本发明不应该被解释为限制于这里阐述的具体实施例。相反，提供这些实施例是为了解释本发明的原理及其实际应用，从而使本领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。在附图中，相同的标号将始终被用于表示相同的元件。\n\n[0022]实施例1\n\n[0023]参照图1、图2，本实施例中的柔性液晶显示器为直下式，其包括背光模组1和显示模组2，背光模组1用于为显示模组2提供光源。背光模组1包括背光源11、设于背光源11的出光侧的光学膜片组12，背光源11包括多个发光二极管10，每一个发光二极管10包括基板100、透明外罩110及发光二极管芯片120，发光二极管芯片120设置于基板100上，透明外罩110用于对发光二极管芯片120进行封装，发光二极管芯片120包括衬底121、依次叠层设于衬底121上的第一电极122、P型半导体层123、N型半导体层124、第二电极125，P型半导体层123包括基质200及填充于基质200中的半导体结构阵列201，半导体结构阵列201包括阵列排布的多个半导体结构300。\n\n[0024]本实施例中的背光源11位于光学膜片组12的底部，背光源11的出光侧指的是背光源11朝向光学膜片组12的一侧。多个发光二极管10成矩阵阵列排布，多个发光二极管10的基板100可以是一整块基板。\n\n[0025]本实施例中的P型半导体层123包括基质200及填充于基质200中的半导体结构阵列201，通过半导体结构阵列201可以在柔性液晶显示器弯曲过程中提升P型半导体层123与N型半导体层124之间的接触面积，从而提升发光二极管芯片120发光的均匀性，同时，通过在基质200中填充半导体结构阵列201，减少了在弯曲过程中半导体结构阵列201受到的应力，从而避免P型半导体层123发生断裂，提升了柔性液晶显示器的品质。\n\n[0026]本实施例中的发光二极管芯片120发出的光为蓝光，半导体结构300的材质为硅，基质200的材质为聚甲基丙烯酸甲酯，N型半导体层124的材质为氧化锌。为了使得发光二极管10发出的光为白光，透明外罩110朝向发光二极管芯片120的一面设置有荧光粉层130，荧光粉层130受激发发射黄光。发光二极管芯片120发出的蓝光一部分激发荧光粉层130，荧光粉层130受激发发射黄光与剩余的蓝光混合形成白光出射。\n\n[0027]半导体结构300为微米柱状结构，多个半导体结构300形成微米柱状的半导体结构阵列201。半导体结构300的截面形状可以为圆形、三角形、正方形、长方形或者其他正多边形结构。多个半导体结构300之间通过基质200填充并通过成膜工艺形成P型半导体层123。其中，P型半导体层123的厚度为100～200nm，N型半导体层124的厚度为300～400nm。\n\n[0028]参照图3、图4，本实施例中的光学膜片组12包括扩散板12a、扩散片12b和增亮膜12c，背光源11发出的光线依次经过扩散板12a、扩散片12b、增亮膜12c后出射。扩散板12a用于支撑扩散片12b和增亮膜12c，同时，扩散板12a还可以起到隔热的作用，防止背光源11的热量传递至显示模组2中。扩散片12b主要用于对光线进行折射、散射和反射，增亮膜12c用于提高柔性液晶显示器正视角方向上的对比度和亮度，其中，增亮膜12c为棱镜片，其材质选自多元酯、聚碳酸酯、丙烯酸酯等材料中的一种。\n\n[0029]其中，扩散片12b包括多个扩散粒子203，每一个扩散粒子203包括第一折射层301、第二折射层302及第三折射层303，第三折射层303位于第一折射层301与第二折射层302之间，第三折射层303的折射率与第一折射层301、第二折射层302的折射率不相等，第一折射层301的折射率与第二折射层302的折射率可以相同，也可以不相同，较佳地，第一折射层301的折射率与第二折射层302的折射率不相同。\n\n[0030]可以直接通过将扩散粒子203涂覆于扩散板12a的上表面即扩散板12a朝向增亮膜12c的一面形成扩散片12b，也可以通过将扩散粒子203填充于基材中通过成膜工艺形成扩散片12b，其中，基材的材质为聚甲基丙烯酸甲酯(PMMA)。\n\n[0031]本实施例中的扩散粒子203包括三层折射层，从而可以使得光线在不同的折射层之间进行多次折射、散射和反射，将光的扩散效果最大化，进一步提升了背光模组发光的均匀性。\n\n[0032]多个扩散粒子203为球状，多个扩散粒子203的粒径不完全相同，多个扩散粒子203中包括大粒径和小粒径，大粒径的扩散粒子203与小粒径的扩散粒子203混合分布即不规则排布，这样可以使得经过扩散片12b扩散后的光束更均匀。扩散粒子203的粒径为150～700nm。\n\n[0033]第三折射层303的材质为二氧化硅，第一折射层301、第二折射层302的材质均选自聚对苯二甲酸乙醇酯、聚醚酯、聚苯乙烯、聚甲基丙烯酸甲酯、聚碳酸酯中的一种。第一折射层301的厚度为50～300nm，第二折射层302的厚度为50～300nm，第三折射层303的厚度为50～100nm。\n\n[0034]本实施例中的背光模组1还包括反射片13，反射片13设于背光源11的底部和侧面，其用于将背光源11入射到其上的光线反射至光学膜片组12上，从而提升了整个背光源11的发光效率。\n\n[0035]此外，柔性液晶显示器还包括外框3，光学膜片组12设置于外框3上并与外框3形成一个容置部，背光源11装设于该容置部中。\n\n[0036]实施例2\n\n[0037]参照图5，本实施例中的柔性液晶显示器为侧入式，其包括背光模组1和显示模组2，背光模组1用于为显示模组2提供光源。背光模组1包括背光源11、设于背光源11的出光侧的导光板14、反射片13及光学膜片组12，其中，背光源11与实施例1的背光源的结构相同，本实施例中的多个发光二极管10成条状排布。\n\n[0038]背光源11与导光板14的入光面相对设置，光学膜片组12与导光板14的出光面相对设置，反射片13设于导光板14的底部，用于将入射到导光板14底部的光线反射至导光板14中。\n\n[0039]将实施例1中的背光源11和光学膜片组12应用到侧入式柔性液晶显示器中同样能够解决发光不均匀以及半导体层容易断裂的问题。\n\n[0040]以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。', '技术领域\n\n[0001]本发明涉及液晶显示技术领域，尤其涉及一种柔性液晶显示器及其背光源。\n\n背景技术\n\n[0002]柔性显示器是用柔性材料制成的可弯曲的显示装置。柔性显示器具有厚度薄、体积小、轻便、易携带、可弯曲、节能环保、个性时尚等优点。因此，柔性显示器将会在显示技术领域得到快速发展。目前柔性显示器主要有OLED和LCD两种。虽然OLED可以很好的解决柔性的问题，但是和相对成熟的LCD相比，还存在诸多急需解决的问题：例如，OLED在发光均匀性、发光效率等方面还存在很多问题；OLED在制程上难以大面积制备、对水和氧气等敏感，而大部分柔性衬底以及目前的封装技术都没有足够能力充分阻挡外界的杂质和气体,这将会极大地影响其发光性能和良品率。LCD是非自身发光的特性，需要背光模组来提供光源，LCD的背光模组主要包括侧光式和直下式，其中，侧入式背光模组中存在LED与导光板在侧边的耦合效率低、弯曲时的光的均匀性的问题；而直下式背光模组主要是厚度较厚，难以做成弯曲的柔性屏且在弯曲过程中容易造成器件的断裂。因此，要想制备大尺寸的柔性LCD，需要提供一种发光均匀的柔性背光模组。\n\n发明内容\n\n[0003]为了解决现有技术的不足，本发明提供的柔性液晶显示器及其背光源，能够解决柔性液晶显示器中侧入式背光模组发光不均匀的问题以及直下式背光模组中不易弯曲且在弯曲过程中容易造成器件断裂的问题。\n\n[0004]本发明提出的具体技术方案为：提供一种背光源，所述背光源包括多个发光二极管，每一个所述发光二极管包括基板、透明外罩及发光二极管芯片，所述发光二极管芯片设置于所述基板上，所述透明外罩用于对所述发光二极管芯片进行封装，所述发光二极管芯片包括衬底、依次叠层设于所述衬底上的第一电极、P型半导体层、N型半导体层、第二电极，所述P型半导体层包括基质及填充于所述基质中的半导体结构阵列，所述半导体结构阵列包括阵列排布的多个半导体结构。\n\n[0005]进一步地，所述半导体结构的材质为硅，所述N型半导体层的材质为氧化锌。\n\n[0006]进一步地，所述半导体结构为微米柱状结构。\n\n[0007]进一步地，所述透明外罩朝向所述发光二极管芯片的一面设置有荧光粉层，所述荧光粉层受激发发射黄光。\n\n[0008]进一步地，所述P型半导体层的厚度为100～200nm，所述N型半导体层的厚度为300～400nm。\n\n[0009]本发明还提供了一种柔性液晶显示器，所述柔性液晶显示器包括背光模组，所述背光模组包括光学膜片组及如上任一所述的背光源，所述光学膜片组设于所述背光源的出光侧。\n\n[0010]进一步地，所述光学膜片组包括扩散板、扩散片和增亮膜，所述背光源发出的光线依次经过所述扩散板、扩散片、增亮膜后出射。\n\n[0011]进一步地，所述扩散片包括多个扩散粒子，每一个所述扩散粒子包括第一折射层、第二折射层及第三折射层，所述第三折射层位于所述第一折射层与所述第二折射层之间，所述第三折射层的折射率与所述第一折射层、第二折射层的折射率不相等。\n\n[0012]进一步地，多个扩散粒子的粒径为150～700nm。\n\n[0013]进一步地，所述第三折射层的材质为二氧化硅，所述第一折射层、第二折射层的材质均选自聚对苯二甲酸乙醇酯、聚醚酯、聚苯乙烯、聚甲基丙烯酸甲酯、聚碳酸酯中的一种。\n\n[0014]本发明提出的柔性液晶显示器及其背光源，所述背光源包括多个发光二极管，每一个所述发光二极管包括基板、透明外罩及发光二极管芯片，所述发光二极管芯片中的P型半导体层包括基质及填充于所述基质中的半导体结构阵列，所述半导体结构阵列包括阵列排布的多个半导体结构，通过半导体结构阵列可以在弯曲过程中提升发光二极管芯片的发光均匀性，同时，通过在基质中填充半导体结构阵列，减少了在弯曲过程中半导体结构阵列受到的应力，从而避免半导体层发生断裂。\n\n附图说明\n\n[0015]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0016]图1为实施例1中柔性液晶显示器的结构示意图；\n\n[0017]图2为实施例1中发光二极管芯片的结构示意图；\n\n[0018]图3为实施例1中光学膜片组的结构示意图；\n\n[0019]图4为实施例1中扩散粒子的结构示意图；\n\n[0020]图5为实施例2中柔性液晶显示器的结构示意图。\n\n具体实施方式\n\n[0021]以下，将参照附图来详细描述本发明的实施例。然而，可以以许多不同的形式来实施本发明，并且本发明不应该被解释为限制于这里阐述的具体实施例。相反，提供这些实施例是为了解释本发明的原理及其实际应用，从而使本领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。在附图中，相同的标号将始终被用于表示相同的元件。\n\n[0022]实施例1\n\n[0023]参照图1、图2，本实施例中的柔性液晶显示器为直下式，其包括背光模组1和显示模组2，背光模组1用于为显示模组2提供光源。背光模组1包括背光源11、设于背光源11的出光侧的光学膜片组12，背光源11包括多个发光二极管10，每一个发光二极管10包括基板100、透明外罩110及发光二极管芯片120，发光二极管芯片120设置于基板100上，透明外罩110用于对发光二极管芯片120进行封装，发光二极管芯片120包括衬底121、依次叠层设于衬底121上的第一电极122、P型半导体层123、N型半导体层124、第二电极125，P型半导体层123包括基质200及填充于基质200中的半导体结构阵列201，半导体结构阵列201包括阵列排布的多个半导体结构300。\n\n[0024]本实施例中的背光源11位于光学膜片组12的底部，背光源11的出光侧指的是背光源11朝向光学膜片组12的一侧。多个发光二极管10成矩阵阵列排布，多个发光二极管10的基板100可以是一整块基板。\n\n[0025]本实施例中的P型半导体层123包括基质200及填充于基质200中的半导体结构阵列201，通过半导体结构阵列201可以在柔性液晶显示器弯曲过程中提升P型半导体层123与N型半导体层124之间的接触面积，从而提升发光二极管芯片120发光的均匀性，同时，通过在基质200中填充半导体结构阵列201，减少了在弯曲过程中半导体结构阵列201受到的应力，从而避免P型半导体层123发生断裂，提升了柔性液晶显示器的品质。\n\n[0026]本实施例中的发光二极管芯片120发出的光为蓝光，半导体结构300的材质为硅，基质200的材质为聚甲基丙烯酸甲酯，N型半导体层124的材质为氧化锌。为了使得发光二极管10发出的光为白光，透明外罩110朝向发光二极管芯片120的一面设置有荧光粉层130，荧光粉层130受激发发射黄光。发光二极管芯片120发出的蓝光一部分激发荧光粉层130，荧光粉层130受激发发射黄光与剩余的蓝光混合形成白光出射。\n\n[0027]半导体结构300为微米柱状结构，多个半导体结构300形成微米柱状的半导体结构阵列201。半导体结构300的截面形状可以为圆形、三角形、正方形、长方形或者其他正多边形结构。多个半导体结构300之间通过基质200填充并通过成膜工艺形成P型半导体层123。其中，P型半导体层123的厚度为100～200nm，N型半导体层124的厚度为300～400nm。\n\n[0028]参照图3、图4，本实施例中的光学膜片组12包括扩散板12a、扩散片12b和增亮膜12c，背光源11发出的光线依次经过扩散板12a、扩散片12b、增亮膜12c后出射。扩散板12a用于支撑扩散片12b和增亮膜12c，同时，扩散板12a还可以起到隔热的作用，防止背光源11的热量传递至显示模组2中。扩散片12b主要用于对光线进行折射、散射和反射，增亮膜12c用于提高柔性液晶显示器正视角方向上的对比度和亮度，其中，增亮膜12c为棱镜片，其材质选自多元酯、聚碳酸酯、丙烯酸酯等材料中的一种。\n\n[0029]其中，扩散片12b包括多个扩散粒子203，每一个扩散粒子203包括第一折射层301、第二折射层302及第三折射层303，第三折射层303位于第一折射层301与第二折射层302之间，第三折射层303的折射率与第一折射层301、第二折射层302的折射率不相等，第一折射层301的折射率与第二折射层302的折射率可以相同，也可以不相同，较佳地，第一折射层301的折射率与第二折射层302的折射率不相同。\n\n[0030]可以直接通过将扩散粒子203涂覆于扩散板12a的上表面即扩散板12a朝向增亮膜12c的一面形成扩散片12b，也可以通过将扩散粒子203填充于基材中通过成膜工艺形成扩散片12b，其中，基材的材质为聚甲基丙烯酸甲酯(PMMA)。\n\n[0031]本实施例中的扩散粒子203包括三层折射层，从而可以使得光线在不同的折射层之间进行多次折射、散射和反射，将光的扩散效果最大化，进一步提升了背光模组发光的均匀性。\n\n[0032]多个扩散粒子203为球状，多个扩散粒子203的粒径不完全相同，多个扩散粒子203中包括大粒径和小粒径，大粒径的扩散粒子203与小粒径的扩散粒子203混合分布即不规则排布，这样可以使得经过扩散片12b扩散后的光束更均匀。扩散粒子203的粒径为150～700nm。\n\n[0033]第三折射层303的材质为二氧化硅，第一折射层301、第二折射层302的材质均选自聚对苯二甲酸乙醇酯、聚醚酯、聚苯乙烯、聚甲基丙烯酸甲酯、聚碳酸酯中的一种。第一折射层301的厚度为50～300nm，第二折射层302的厚度为50～300nm，第三折射层303的厚度为50～100nm。\n\n[0034]本实施例中的背光模组1还包括反射片13，反射片13设于背光源11的底部和侧面，其用于将背光源11入射到其上的光线反射至光学膜片组12上，从而提升了整个背光源11的发光效率。\n\n[0035]此外，柔性液晶显示器还包括外框3，光学膜片组12设置于外框3上并与外框3形成一个容置部，背光源11装设于该容置部中。\n\n[0036]实施例2\n\n[0037]参照图5，本实施例中的柔性液晶显示器为侧入式，其包括背光模组1和显示模组2，背光模组1用于为显示模组2提供光源。背光模组1包括背光源11、设于背光源11的出光侧的导光板14、反射片13及光学膜片组12，其中，背光源11与实施例1的背光源的结构相同，本实施例中的多个发光二极管10成条状排布。\n\n[0038]背光源11与导光板14的入光面相对设置，光学膜片组12与导光板14的出光面相对设置，反射片13设于导光板14的底部，用于将入射到导光板14底部的光线反射至导光板14中。\n\n[0039]将实施例1中的背光源11和光学膜片组12应用到侧入式柔性液晶显示器中同样能够解决发光不均匀以及半导体层容易断裂的问题。\n\n[0040]以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10614, 23668, '技术领域\n\n[0001]本发明属于液晶显示技术领域，具体地讲，涉及一种液晶显示器。\n\n背景技术\n\n[0002]进入现代社会，人与显示器的交互成为人们获取与分享信息的重要途径，其中液晶显示器由于良好的画面再现性成为目前显示器的主流，这是因为液晶显示器在分辨率、帧率、色域、色偏、对比度、可视角、串扰、闪烁等规格方面已经逐渐满足了人眼对于显示画质的视觉需求。\n\n[0003]移动终端显示技术近年来最新的突破方向则是更加注重新交互技术的集成与视觉美学性的提升，其中一个重要的方向便是高屏占比的全面屏显示技术，其关键的突破在于显示面板的上下左右边框(border)的压缩、摄像头及探测器异形切割、面内指纹识别等。目前较为常用的方式是采用正面指纹识别技术，传统的指纹识别技术采用与主页键(Home键)一体的方案，但是全面屏技术的要求使得面内指纹识别成为目前的当务之急。目前主流的指纹识别技术方案主要三种：电容指纹识别、超声波指纹识别、光学式指纹识别，其中光学式指纹识别由于能够穿透较厚的盖板玻璃成为目前最接近量产的方案。\n\n[0004]光学式指纹识别应用于液晶显示技术中成为目前大家研究突破的重点方向，其中一个重要难点在于液晶显示器的面内识别区域需要设置光电探测器，这样不可避免的会影响到该面内识别区域的穿透率和灰阶亮度，从而导致液晶显示器整面显示不均匀的现象。\n\n发明内容\n\n[0005]为了解决上述现有技术存在的技术问题，本发明的目的在于提供一种使具有光学探测器的液晶面板显示均匀的液晶显示器。\n\n[0006]根据本发明的一方面，提供了一种液晶显示器，其包括：液晶面板，包括多个光电探测器、与多个光电探测器对应的多个第一子像素以及多个第二子像素，每个光电探测器和与其对应的至少一个第一子像素的开口区部分重叠；背光模块，与所述液晶面板相对设置，所述背光模块包括第一发光部和第二发光部，所述第一发光部与所述多个第一子像素相对，所述第二发光部与所述多个第二子像素相对，所述第一发光部的发光亮度大于所述第二发光部的发光亮度。\n\n[0007]进一步地，所述第一发光部的发光亮度与所述第二发光部的发光亮度的比值等于所述多个第二子像素的穿透率与所述多个第一子像素的穿透率的比值。\n\n[0008]进一步地，所述第一发光部包括多个第一LED，所述第二发光部包括多个第二LED，所述第一LED的驱动电流大于所述第二LED的驱动电流。\n\n[0009]进一步地，所述背光模块还包括：LED驱动器，用于分别向所述第一LED和所述第二LED提供驱动电流；电流功放电路，设置于所述LED驱动器和所述第一LED之间，所述电流功放电路用于将所述LED驱动器提供给所述第一LED的驱动电流进行放大。\n\n[0010]进一步地，所述第一LED和所述第二LED通过设置于绑定区的绑定电极连接到所述LED驱动器。\n\n[0011]进一步地，所述第一发光部的所述第一LED的排布方式与所述第二发光部的所述第二LED的排布方式相同。\n\n[0012]进一步地，所述第一LED和所述第一子像素一一对应相对，所述第二LED和所述第二子像素一一对应相对。\n\n[0013]进一步地，所述第一LED和所述第二LED均为Micro LED。\n\n[0014]进一步地，所述多个光电探测器阵列排布。\n\n[0015]进一步地，所述光电探测器包括指纹识别光电探测器。\n\n[0016]本发明的有益效果：本发明通过提升背光模块的与液晶面板的多个第一子像素相对的第一发光部的发光亮度来弥补第一子像素的穿透率的损失，从而使液晶面板的显示亮度均匀。\n\n附图说明\n\n[0017]通过结合附图进行的以下描述，本发明的实施例的上述和其它方面、特点和优点将变得更加清楚，附图中：\n\n[0018]图1是根据本发明的实施例的液晶面板的结构示意图；\n\n[0019]图2是根据本发明的另一实施例的光电探测器与第一子像素的对位示意图；\n\n[0020]图3是根据本发明的实施例的背光模块的结构示意图。\n\n具体实施方式\n\n[0021]以下，将参照附图来详细描述本发明的实施例。然而，可以以许多不同的形式来实施本发明，并且本发明不应该被解释为限制于这里阐述的具体实施例。相反，提供这些实施例是为了解释本发明的原理及其实际应用，从而使本领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。\n\n[0022]在附图中，为了清楚起见，夸大了层和区域的厚度。相同的标号在整个说明书和附图中表示相同的元器件。\n\n[0023]将理解的是，尽管在这里可使用术语“第一”、“第二”等来描述各种元件，但是这些元件不应受这些术语的限制。这些术语仅用于将一个元件与另一个元件区分开来。\n\n[0024]图1是根据本发明的实施例的液晶面板的结构示意图。\n\n[0025]参照图1，根据本发明的实施例的液晶面板100包括多个第一子像素110、多个第二子像素120和多个光电探测器130。\n\n[0026]具体地，多个第一子像素110和多个第二子像素120阵列排布。在本实施例中，将多个第一子像素110所在区域定义为面内识别区域A1，而将多个第二子像素120所在区域定义为位于面内识别区域A1之外的非识别区域A2。\n\n[0027]多个第一子像素110与多个光电探测器130对应。也就是说，多个光电探测器130位于面内识别区域A1。具体地，第一子像素110通常包括开口区111和器件区112；其中开口区111通常可以使背光模块提供的背光穿射过去，而器件区112由于设置薄膜晶体管等器件，因此器件区112无法使背光模块提供的背光穿射过去。需要说明的是，第二子像素120具有与第一子像素110相同的像素结构。\n\n[0028]进一步地，在本实施例中，光电探测器130和第一子像素110一一对应，一个光电探测器130和其对应的一个第一子像素110的开口区111部分重叠。这样，这个光电探测器130会影响与其具有重叠部分的第一子像素110的开口区111的穿透率，从而使该第一子像素110的开口区111的穿透率下降。\n\n[0029]如此，每个第一子像素110的开口区111和其对应的一个光电探测器130部分重叠，从而会导致面内识别区域A1的显示亮度低于非识别区域A2的显示亮度，进而造成液晶面板100的显示不均匀。\n\n[0030]作为本发明的另一实施例，参照图2，每个光电探测器130还可以对应两个第一子像素110，这样，每个光电探测器130和其对应的两个第一子像素110的开口区111分别部分重叠。当然，应当理解的是，可以根据实际需求使每个光电探测器130对应三个或者更多个第一子像素110。\n\n[0031]一般而言，液晶面板100通常由阵列基板(未示出)和彩膜基板(未示出)构成。在本发明的实施例中，光电探测器130可以设置于阵列基板上，或者光电探测器130还可以设置于彩膜基板上，只要是光电探测器130和其对应的第一子像素110的开口区111在空间上具有重叠部分即可，也就是说，光电探测器130在其对应的第一子像素110上的投影位于其对应的第一子像素110的开口区111以内即可。\n\n[0032]众所周知，液晶面板100并不发光，因此其显示必需借用与其相对的背光模块提供的背光而进行显示。为了解决液晶面板100的显示不均匀，本实施例还提供了一种背光模块。\n\n[0033]此外，在本实施例中，面内识别区域A1内的多个光电探测器130阵列排布，但本发明并不限制于此。进一步地，光电探测器130包括指纹识别光电探测器，但本发明并不限制于此。这样，面内识别区域A1被构造为指纹识别区域。\n\n[0034]图3是根据本发明的实施例的背光模块的结构示意图。\n\n[0035]参照图3，根据本发明的实施例的背光模块200可以与图1所示的液晶面板100相对设置，以向液晶面板100提供显示背光。背光模块200包括第一发光部210和第二发光部220。第一发光部210与面内识别区域A1相对设置，即第一发光部210与多个第一子像素110相对设置；第二发光部220与非识别区域A2相对设置，即第二发光部220与多个第二子像素120相对设置。\n\n[0036]为了解决液晶面板100的面内识别区域A1与非识别区域A2的显示亮度不均匀的问题，可以使第一发光部210的发光亮度大于第二发光部220的发光亮度，这样可以补偿由于第一子像素110的开口区111被光电探测器130遮挡而使面内识别区域A1的显示亮度下降的部分，从而使面内识别区域A1的显示亮度与非识别区域A2的显示亮度一致，进而使液晶面板100显示均匀。\n\n[0037]进一步地，可以事先量测确定多个第二子像素120的穿透率(或者平均穿透率)，即非识别区域A2的穿透率(或者平均穿透率)，并且事先量测确定多个第一子像素110的穿透率(或者平均穿透率)，即面内识别区域A1的穿透率(或者平均穿透率)，使第一发光部210的发光亮度与第二发光部220的发光亮度的比值等于多个第二子像素120的穿透率与多个第一子像素110的穿透率的比值，这样可以使面内识别区域A1的显示亮度与非识别区域A2的显示亮度一致，从而可以通过第一发光部210与第二发光部220的发光亮度的差异来弥补面内识别区域A1与非识别区域A2因不同的穿透率而出现的显示亮度差异。\n\n[0038]此外，为了调节第一发光部210和第二发光部220的发光亮度，第一发光部210包括多个第一LED211，第二发光部220包括多个第二LED221。这里，第一LED211和第二LED221相同。第一发光部210中的多个第一LED211的排布方式与第二发光部220中的多个第二LED221的排列方式相同。\n\n[0039]进一步地，第一发光部210中的多个第一LED211阵列排布，并且第二发光部220中的多个第二LED221阵列排布。也就是说，多个第一LED211和多个第二LED221阵列排布。\n\n[0040]在本实施例中，第一LED211和第二LED221均是微型LED，即Micro LED，但本发明并不限制于此。这样，第一LED211可以与第一子像素110一一对应相对，即一个第一LED211对应相对一个第一子像素110；且第二LED221可以与第二子像素120一一对应相对，即一个第二LED221对应相对一个第二子像素120。\n\n[0041]为了使第一发光部210的发光亮度大于第二发光部220的发光亮度，在本实施例中，使第一LED211的驱动电流大于第二LED221的驱动电流。\n\n[0042]在本实施例中，背光模块200还包括：LED驱动器230，其中LED驱动器230向第一LED211和第二LED221提供驱动电流。进一步地，LED驱动器230通过设置于绑定区A3的绑定电极，即阳极B1和阴极B2连接到第一LED211和第二LED221。\n\n[0043]通常而言，LED驱动器230通过绑定电极向第一LED211和LED221提供相同的驱动电流。但是在本实施例中，为了使第一LED211的驱动电流大于第二LED221的驱动电流，背光模块200还包括电流功放电路240，该电流功放电路240设置于阳极B1和第一LED211之间，该电流功放电路240用于将LED驱动器230提供给第一LED211的驱动电流进行放大。\n\n[0044]综上所述，根据本发明的实施例，通过提升背光模块的与液晶面板的多个第一子像素相对的第一发光部的发光亮度来弥补第一子像素的穿透率的损失，从而使液晶面板的显示亮度均匀。\n\n[0045]虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。', '技术领域\n\n[0001]本发明属于液晶显示技术领域，具体地讲，涉及一种液晶显示器。\n\n背景技术\n\n[0002]进入现代社会，人与显示器的交互成为人们获取与分享信息的重要途径，其中液晶显示器由于良好的画面再现性成为目前显示器的主流，这是因为液晶显示器在分辨率、帧率、色域、色偏、对比度、可视角、串扰、闪烁等规格方面已经逐渐满足了人眼对于显示画质的视觉需求。\n\n[0003]移动终端显示技术近年来最新的突破方向则是更加注重新交互技术的集成与视觉美学性的提升，其中一个重要的方向便是高屏占比的全面屏显示技术，其关键的突破在于显示面板的上下左右边框(border)的压缩、摄像头及探测器异形切割、面内指纹识别等。目前较为常用的方式是采用正面指纹识别技术，传统的指纹识别技术采用与主页键(Home键)一体的方案，但是全面屏技术的要求使得面内指纹识别成为目前的当务之急。目前主流的指纹识别技术方案主要三种：电容指纹识别、超声波指纹识别、光学式指纹识别，其中光学式指纹识别由于能够穿透较厚的盖板玻璃成为目前最接近量产的方案。\n\n[0004]光学式指纹识别应用于液晶显示技术中成为目前大家研究突破的重点方向，其中一个重要难点在于液晶显示器的面内识别区域需要设置光电探测器，这样不可避免的会影响到该面内识别区域的穿透率和灰阶亮度，从而导致液晶显示器整面显示不均匀的现象。\n\n发明内容\n\n[0005]为了解决上述现有技术存在的技术问题，本发明的目的在于提供一种使具有光学探测器的液晶面板显示均匀的液晶显示器。\n\n[0006]根据本发明的一方面，提供了一种液晶显示器，其包括：液晶面板，包括多个光电探测器、与多个光电探测器对应的多个第一子像素以及多个第二子像素，每个光电探测器和与其对应的至少一个第一子像素的开口区部分重叠；背光模块，与所述液晶面板相对设置，所述背光模块包括第一发光部和第二发光部，所述第一发光部与所述多个第一子像素相对，所述第二发光部与所述多个第二子像素相对，所述第一发光部的发光亮度大于所述第二发光部的发光亮度。\n\n[0007]进一步地，所述第一发光部的发光亮度与所述第二发光部的发光亮度的比值等于所述多个第二子像素的穿透率与所述多个第一子像素的穿透率的比值。\n\n[0008]进一步地，所述第一发光部包括多个第一LED，所述第二发光部包括多个第二LED，所述第一LED的驱动电流大于所述第二LED的驱动电流。\n\n[0009]进一步地，所述背光模块还包括：LED驱动器，用于分别向所述第一LED和所述第二LED提供驱动电流；电流功放电路，设置于所述LED驱动器和所述第一LED之间，所述电流功放电路用于将所述LED驱动器提供给所述第一LED的驱动电流进行放大。\n\n[0010]进一步地，所述第一LED和所述第二LED通过设置于绑定区的绑定电极连接到所述LED驱动器。\n\n[0011]进一步地，所述第一发光部的所述第一LED的排布方式与所述第二发光部的所述第二LED的排布方式相同。\n\n[0012]进一步地，所述第一LED和所述第一子像素一一对应相对，所述第二LED和所述第二子像素一一对应相对。\n\n[0013]进一步地，所述第一LED和所述第二LED均为Micro LED。\n\n[0014]进一步地，所述多个光电探测器阵列排布。\n\n[0015]进一步地，所述光电探测器包括指纹识别光电探测器。\n\n[0016]本发明的有益效果：本发明通过提升背光模块的与液晶面板的多个第一子像素相对的第一发光部的发光亮度来弥补第一子像素的穿透率的损失，从而使液晶面板的显示亮度均匀。\n\n附图说明\n\n[0017]通过结合附图进行的以下描述，本发明的实施例的上述和其它方面、特点和优点将变得更加清楚，附图中：\n\n[0018]图1是根据本发明的实施例的液晶面板的结构示意图；\n\n[0019]图2是根据本发明的另一实施例的光电探测器与第一子像素的对位示意图；\n\n[0020]图3是根据本发明的实施例的背光模块的结构示意图。\n\n具体实施方式\n\n[0021]以下，将参照附图来详细描述本发明的实施例。然而，可以以许多不同的形式来实施本发明，并且本发明不应该被解释为限制于这里阐述的具体实施例。相反，提供这些实施例是为了解释本发明的原理及其实际应用，从而使本领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。\n\n[0022]在附图中，为了清楚起见，夸大了层和区域的厚度。相同的标号在整个说明书和附图中表示相同的元器件。\n\n[0023]将理解的是，尽管在这里可使用术语“第一”、“第二”等来描述各种元件，但是这些元件不应受这些术语的限制。这些术语仅用于将一个元件与另一个元件区分开来。\n\n[0024]图1是根据本发明的实施例的液晶面板的结构示意图。\n\n[0025]参照图1，根据本发明的实施例的液晶面板100包括多个第一子像素110、多个第二子像素120和多个光电探测器130。\n\n[0026]具体地，多个第一子像素110和多个第二子像素120阵列排布。在本实施例中，将多个第一子像素110所在区域定义为面内识别区域A1，而将多个第二子像素120所在区域定义为位于面内识别区域A1之外的非识别区域A2。\n\n[0027]多个第一子像素110与多个光电探测器130对应。也就是说，多个光电探测器130位于面内识别区域A1。具体地，第一子像素110通常包括开口区111和器件区112；其中开口区111通常可以使背光模块提供的背光穿射过去，而器件区112由于设置薄膜晶体管等器件，因此器件区112无法使背光模块提供的背光穿射过去。需要说明的是，第二子像素120具有与第一子像素110相同的像素结构。\n\n[0028]进一步地，在本实施例中，光电探测器130和第一子像素110一一对应，一个光电探测器130和其对应的一个第一子像素110的开口区111部分重叠。这样，这个光电探测器130会影响与其具有重叠部分的第一子像素110的开口区111的穿透率，从而使该第一子像素110的开口区111的穿透率下降。\n\n[0029]如此，每个第一子像素110的开口区111和其对应的一个光电探测器130部分重叠，从而会导致面内识别区域A1的显示亮度低于非识别区域A2的显示亮度，进而造成液晶面板100的显示不均匀。\n\n[0030]作为本发明的另一实施例，参照图2，每个光电探测器130还可以对应两个第一子像素110，这样，每个光电探测器130和其对应的两个第一子像素110的开口区111分别部分重叠。当然，应当理解的是，可以根据实际需求使每个光电探测器130对应三个或者更多个第一子像素110。\n\n[0031]一般而言，液晶面板100通常由阵列基板(未示出)和彩膜基板(未示出)构成。在本发明的实施例中，光电探测器130可以设置于阵列基板上，或者光电探测器130还可以设置于彩膜基板上，只要是光电探测器130和其对应的第一子像素110的开口区111在空间上具有重叠部分即可，也就是说，光电探测器130在其对应的第一子像素110上的投影位于其对应的第一子像素110的开口区111以内即可。\n\n[0032]众所周知，液晶面板100并不发光，因此其显示必需借用与其相对的背光模块提供的背光而进行显示。为了解决液晶面板100的显示不均匀，本实施例还提供了一种背光模块。\n\n[0033]此外，在本实施例中，面内识别区域A1内的多个光电探测器130阵列排布，但本发明并不限制于此。进一步地，光电探测器130包括指纹识别光电探测器，但本发明并不限制于此。这样，面内识别区域A1被构造为指纹识别区域。\n\n[0034]图3是根据本发明的实施例的背光模块的结构示意图。\n\n[0035]参照图3，根据本发明的实施例的背光模块200可以与图1所示的液晶面板100相对设置，以向液晶面板100提供显示背光。背光模块200包括第一发光部210和第二发光部220。第一发光部210与面内识别区域A1相对设置，即第一发光部210与多个第一子像素110相对设置；第二发光部220与非识别区域A2相对设置，即第二发光部220与多个第二子像素120相对设置。\n\n[0036]为了解决液晶面板100的面内识别区域A1与非识别区域A2的显示亮度不均匀的问题，可以使第一发光部210的发光亮度大于第二发光部220的发光亮度，这样可以补偿由于第一子像素110的开口区111被光电探测器130遮挡而使面内识别区域A1的显示亮度下降的部分，从而使面内识别区域A1的显示亮度与非识别区域A2的显示亮度一致，进而使液晶面板100显示均匀。\n\n[0037]进一步地，可以事先量测确定多个第二子像素120的穿透率(或者平均穿透率)，即非识别区域A2的穿透率(或者平均穿透率)，并且事先量测确定多个第一子像素110的穿透率(或者平均穿透率)，即面内识别区域A1的穿透率(或者平均穿透率)，使第一发光部210的发光亮度与第二发光部220的发光亮度的比值等于多个第二子像素120的穿透率与多个第一子像素110的穿透率的比值，这样可以使面内识别区域A1的显示亮度与非识别区域A2的显示亮度一致，从而可以通过第一发光部210与第二发光部220的发光亮度的差异来弥补面内识别区域A1与非识别区域A2因不同的穿透率而出现的显示亮度差异。\n\n[0038]此外，为了调节第一发光部210和第二发光部220的发光亮度，第一发光部210包括多个第一LED211，第二发光部220包括多个第二LED221。这里，第一LED211和第二LED221相同。第一发光部210中的多个第一LED211的排布方式与第二发光部220中的多个第二LED221的排列方式相同。\n\n[0039]进一步地，第一发光部210中的多个第一LED211阵列排布，并且第二发光部220中的多个第二LED221阵列排布。也就是说，多个第一LED211和多个第二LED221阵列排布。\n\n[0040]在本实施例中，第一LED211和第二LED221均是微型LED，即Micro LED，但本发明并不限制于此。这样，第一LED211可以与第一子像素110一一对应相对，即一个第一LED211对应相对一个第一子像素110；且第二LED221可以与第二子像素120一一对应相对，即一个第二LED221对应相对一个第二子像素120。\n\n[0041]为了使第一发光部210的发光亮度大于第二发光部220的发光亮度，在本实施例中，使第一LED211的驱动电流大于第二LED221的驱动电流。\n\n[0042]在本实施例中，背光模块200还包括：LED驱动器230，其中LED驱动器230向第一LED211和第二LED221提供驱动电流。进一步地，LED驱动器230通过设置于绑定区A3的绑定电极，即阳极B1和阴极B2连接到第一LED211和第二LED221。\n\n[0043]通常而言，LED驱动器230通过绑定电极向第一LED211和LED221提供相同的驱动电流。但是在本实施例中，为了使第一LED211的驱动电流大于第二LED221的驱动电流，背光模块200还包括电流功放电路240，该电流功放电路240设置于阳极B1和第一LED211之间，该电流功放电路240用于将LED驱动器230提供给第一LED211的驱动电流进行放大。\n\n[0044]综上所述，根据本发明的实施例，通过提升背光模块的与液晶面板的多个第一子像素相对的第一发光部的发光亮度来弥补第一子像素的穿透率的损失，从而使液晶面板的显示亮度均匀。\n\n[0045]虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。');
INSERT INTO `os_patent_instruction_text` VALUES (10615, 23669, '技术领域\n\n[0001]本发明涉及半导体制作技术领域，尤其涉及一种微型发光二极管显示面板及其制作方法。\n\n背景技术\n\n[0002]随着消费者需求的日益提升，显示装置中各模组的轻薄化越来越受到人们的关注与重视。通常，显示装置包括显示面板和背光模组，背光模组能够发出光线而作为显示面板的背光源。目前的背光模组按照光源与导光板的位置关系主要分为两种，直下式和侧入式，其中，直下式背光由于其结构限制，在厚度上不具备优势；而相对地，侧入式背光由于侧入式背光源占据一定的边框宽度，使得其无法进一步做窄，限制了整体的边框设计。因此，无论是侧入式背光还是直下式背光，均无法兼顾显示装置的厚度和窄边框。\n\n发明内容\n\n[0003]鉴于现有技术存在的不足，本发明提供了一种微型发光二极管显示面板及其制作方法，兼具超薄厚度和超窄边框。\n\n[0004]为了实现上述的目的，本发明采用了如下的技术方案：\n\n[0005]一种微型发光二极管(即Micro LED)显示面板，包括薄膜晶体管基板、设于所述薄膜晶体管基板顶部的底部电极、设于所述底部电极上的微型发光二极管芯片、设于所述微型发光二极管芯片顶部的顶部电极以及覆盖所述薄膜晶体管基板和所述微型发光二极管芯片的第一钝化层，所述底部电极为多个，相互间隔地阵列设置在所述薄膜晶体管基板顶部，所述底部电极的底端延伸至与所述薄膜晶体管基板的源极或漏极导通，所述顶部电极至少部分位于所述第一钝化层外。\n\n[0006]作为其中一种实施方式，所述的微型发光二极管显示面板还包括键合层，所述微型发光二极管芯片与所述底部电极之间通过所述键合层连接。\n\n[0007]作为其中一种实施方式，所述微型发光二极管芯片包括发光层、分别设于所述发光层两侧的N型半导体层和P型半导体层、设于所述P型半导体层表面的透明导电层以及设于所述透明导电层表面的P型金属电极，所述N型半导体层通过所述键合层与所述底部电极键合，所述顶部电极延伸至与所述P型金属电极表面接触。\n\n[0008]作为其中一种实施方式，所述薄膜晶体管基板还包括衬底、设于所述衬底上的缓冲层、设于所述缓冲层上的有源层、设于所述缓冲层上并覆盖所述有源层的栅极绝缘层、设于所述栅极绝缘层上的栅极、同时设于所述栅极绝缘层和所述栅极上的介电层以及覆盖于所述介电层上的第二钝化层，所述第二钝化层完全覆盖源极和漏极。\n\n[0009]作为其中一种实施方式，所述薄膜晶体管基板还包括平坦层，所述平坦层覆盖于所述第二钝化层表面，所述底部电极设于所述第二钝化层表面并贯穿所述第二钝化层，延伸至所述薄膜晶体管基板的源极或漏极表面。\n\n[0010]本发明的另一目的在于提供一种微型发光二极管显示面板的制作方法，包括：\n\n[0011]提供一薄膜晶体管基板；\n\n[0012]在所述薄膜晶体管基板顶部开孔并制作底部电极，使所述底部电极的底端延伸至与所述薄膜晶体管基板的源极或漏极导通；\n\n[0013]将微型发光二极管芯片转移至所述底部电极上；\n\n[0014]制作第一钝化层，使所述第一钝化层完全覆盖所述微型发光二极管芯片、所述底部电极和所述薄膜晶体管基板上表面；\n\n[0015]在所述第一钝化层表面开设通孔，使所述微型发光二极管芯片暴露；\n\n[0016]在所述通孔内制作顶部电极。\n\n[0017]作为其中一种实施方式，将微型发光二极管芯片转移至所述底部电极上时，所述微型发光二极管芯片与所述底部电极之间通过所述键合层连接。\n\n[0018]作为其中一种实施方式，所述微型发光二极管芯片包括发光层、分别设于所述发光层两侧的N型半导体层和P型半导体层、设于所述P型半导体层表面的透明导电层以及设于所述透明导电层表面的P型金属电极；将微型发光二极管芯片转移至所述底部电极上时，所述N型半导体层通过所述键合层与所述底部电极键合；在所述通孔内制作顶部电极时，使所述顶部电极延伸至与所述P型金属电极表面接触。\n\n[0019]作为其中一种实施方式，所述薄膜晶体管基板还包括衬底、设于所述衬底上的缓冲层、设于所述缓冲层上的有源层、设于所述缓冲层上并覆盖所述有源层的栅极绝缘层、设于所述栅极绝缘层上的栅极、同时设于所述栅极绝缘层和所述栅极上的介电层以及覆盖于所述介电层上的第二钝化层，所述第二钝化层完全覆盖源极和漏极。\n\n[0020]作为其中一种实施方式，所述薄膜晶体管基板还包括平坦层，所述平坦层覆盖于所述第二钝化层表面，所述底部电极设于所述第二钝化层表面并贯穿所述第二钝化层，延伸至所述薄膜晶体管基板的源极或漏极表面。\n\n[0021]本发明通过直接在薄膜晶体管基板上制作连接有底部电极和顶部电极的微型发光二极管芯片，使得显示面板的厚度大幅减薄，并能同时实现窄边框显示的效果。并且，本发明微型发光二极管芯片旁的保护结构为整层的钝化层，无需多次制备工艺，简化了制作工序。\n\n附图说明\n\n[0022]图1为本发明实施例的Micro LED显示面板的结构示意图；\n\n[0023]图2为本发明实施例的Micro LED显示面板的制作方法流程图；\n\n[0024]图3为本发明实施例的Micro LED显示面板的一部分制作过程示意图；\n\n[0025]图4为本发明实施例的Micro LED显示面板的另一部分制作过程示意图。\n\n具体实施方式\n\n[0026]为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。\n\n[0027]参阅图1，本发明实施例的Micro LED显示面板包括薄膜晶体管基板10、设于薄膜晶体管基板10顶部的底部电极20、设于底部电极20上的微型发光二极管芯片30、设于微型发光二极管芯片30顶部的顶部电极40以及覆盖薄膜晶体管基板10和微型发光二极管芯片30的有机的第一钝化层50，底部电极20为多个，相互间隔地阵列设置在薄膜晶体管基板10顶部，底部电极20的底端延伸至与薄膜晶体管基板10的源极或漏极100导通，顶部电极40至少部分位于第一钝化层50外，其顶部贴合于第一钝化层50表面，以便方便地与驱动电路连接。\n\n[0028]具体地，微型发光二极管芯片30与底部电极20之间通过键合层60进行连接。微型发光二极管芯片30包括发光层31、分别设于发光层31两侧的N型半导体层32和P型半导体层33、设于P型半导体层33表面的透明导电层34以及设于透明导电层34表面的P型金属电极35，N型半导体层32通过键合层60与底部电极20键合，顶部电极40延伸至与P型金属电极35表面接触。\n\n[0029]通常，微型发光二极管芯片30的制作方法为：先在蓝宝石类的基板上通过分子束外延生长出发出各种颜色光线的微型发光二极管芯片30，然把微型发光二极管芯片30转移到玻璃基板上。微型发光二极管芯片30制作完成后，通过转印的方式利用键合层60与薄膜晶体管基板10上对应位置的底部电极20键合。\n\n[0030]薄膜晶体管基板10除了具有源极/漏极100外，还包括衬底11、设于衬底11上的缓冲层12、设于缓冲层12上的有源层13、设于缓冲层12上并覆盖有源层13的栅极绝缘层14、设于栅极绝缘层14上的栅极15、同时设于栅极绝缘层14和栅极15上的介电层16以及覆盖于介电层16上的第二钝化层17，第二钝化层17完全覆盖源极和漏极，可以在进行开孔时避免孔壁崩塌，源极/漏极100设于介电层16表面并延伸至与下方的有源层13导通。\n\n[0031]另外，薄膜晶体管基板10的表面还具体一层平坦层18，该平坦层18覆盖于第二钝化层17表面，可以保证底部电极20以及第一钝化层50具有平整的制作表面，底部电极20设于第二钝化层17表面并贯穿第二钝化层17，延伸至薄膜晶体管基板10的源极/漏极100表面。\n\n[0032]如图2～4所示，本发明的还提供了一种微型发光二极管显示面板的制作方法，包括：\n\n[0033]S01、提供一薄膜晶体管基板10，薄膜晶体管基板10包括源极/漏极100、衬底11、设于衬底11上的缓冲层12、设于缓冲层12上的有源层13、设于缓冲层12上并覆盖有源层13的栅极绝缘层14、设于栅极绝缘层14上的栅极15、同时设于栅极绝缘层14和栅极15上的介电层16/覆盖于介电层16上的第二钝化层17以及平坦层18，第二钝化层17完全覆盖源极和漏极，平坦层18覆盖于第二钝化层17表面，底部电极20设于第二钝化层17表面并贯穿第二钝化层17，延伸至薄膜晶体管基板10的源极或漏极100表面；\n\n[0034]S02、在薄膜晶体管基板10顶部开孔并制作底部电极20，使底部电极20的底端延伸至与薄膜晶体管基板10的源极或漏极100导通；\n\n[0035]S03、将微型发光二极管芯片30转移至底部电极20上，并使微型发光二极管芯片30与底部电极20之间通过键合层60连接；具体地，微型发光二极管芯片30包括发光层31、分别设于发光层31两侧的N型半导体层32和P型半导体层33、设于P型半导体层33表面的透明导电层34以及设于透明导电层34表面的P型金属电极35；将微型发光二极管芯片30转移至底部电极20上时，N型半导体层32通过键合层60与底部电极20键合；\n\n[0036]S04、制作第一钝化层50，使第一钝化层50完全覆盖微型发光二极管芯片30、底部电极20和薄膜晶体管基板10上表面；\n\n[0037]S05、在第一钝化层50表面开设通孔500，使微型发光二极管芯片30暴露；\n\n[0038]S06、在通孔500内制作顶部电极40，使顶部电极40与微型发光二极管芯片30导通，即，延伸至与P型金属电极35表面接触，且其顶部贴合于第一钝化层50表面。\n\n[0039]微型发光二极管芯片30四周完全被整层的第一钝化层50包围，只需要一次性制作出一层第一钝化层50将微型发光二极管芯片30掩埋于其中，随后再在第一钝化层50上方开设通孔500，即可使微型发光二极管芯片30暴露，从而方便地制作顶部电极40。\n\n[0040]由于本发明直接在薄膜晶体管基板上制作连接有底部电极和顶部电极的微型发光二极管芯片，微型发光二极管芯片直接通过键合的方式形成在薄膜晶体管基板表面的底部电极上，使得显示面板的厚度大幅减薄，并能同时实现窄边框显示的效果。并且，本发明微型发光二极管芯片旁的保护结构为整层的钝化层，无需多次制备工艺，简化了制作工序。\n\n[0041]以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。', '技术领域\n\n[0001]本发明涉及半导体制作技术领域，尤其涉及一种微型发光二极管显示面板及其制作方法。\n\n背景技术\n\n[0002]随着消费者需求的日益提升，显示装置中各模组的轻薄化越来越受到人们的关注与重视。通常，显示装置包括显示面板和背光模组，背光模组能够发出光线而作为显示面板的背光源。目前的背光模组按照光源与导光板的位置关系主要分为两种，直下式和侧入式，其中，直下式背光由于其结构限制，在厚度上不具备优势；而相对地，侧入式背光由于侧入式背光源占据一定的边框宽度，使得其无法进一步做窄，限制了整体的边框设计。因此，无论是侧入式背光还是直下式背光，均无法兼顾显示装置的厚度和窄边框。\n\n发明内容\n\n[0003]鉴于现有技术存在的不足，本发明提供了一种微型发光二极管显示面板及其制作方法，兼具超薄厚度和超窄边框。\n\n[0004]为了实现上述的目的，本发明采用了如下的技术方案：\n\n[0005]一种微型发光二极管(即Micro LED)显示面板，包括薄膜晶体管基板、设于所述薄膜晶体管基板顶部的底部电极、设于所述底部电极上的微型发光二极管芯片、设于所述微型发光二极管芯片顶部的顶部电极以及覆盖所述薄膜晶体管基板和所述微型发光二极管芯片的第一钝化层，所述底部电极为多个，相互间隔地阵列设置在所述薄膜晶体管基板顶部，所述底部电极的底端延伸至与所述薄膜晶体管基板的源极或漏极导通，所述顶部电极至少部分位于所述第一钝化层外。\n\n[0006]作为其中一种实施方式，所述的微型发光二极管显示面板还包括键合层，所述微型发光二极管芯片与所述底部电极之间通过所述键合层连接。\n\n[0007]作为其中一种实施方式，所述微型发光二极管芯片包括发光层、分别设于所述发光层两侧的N型半导体层和P型半导体层、设于所述P型半导体层表面的透明导电层以及设于所述透明导电层表面的P型金属电极，所述N型半导体层通过所述键合层与所述底部电极键合，所述顶部电极延伸至与所述P型金属电极表面接触。\n\n[0008]作为其中一种实施方式，所述薄膜晶体管基板还包括衬底、设于所述衬底上的缓冲层、设于所述缓冲层上的有源层、设于所述缓冲层上并覆盖所述有源层的栅极绝缘层、设于所述栅极绝缘层上的栅极、同时设于所述栅极绝缘层和所述栅极上的介电层以及覆盖于所述介电层上的第二钝化层，所述第二钝化层完全覆盖源极和漏极。\n\n[0009]作为其中一种实施方式，所述薄膜晶体管基板还包括平坦层，所述平坦层覆盖于所述第二钝化层表面，所述底部电极设于所述第二钝化层表面并贯穿所述第二钝化层，延伸至所述薄膜晶体管基板的源极或漏极表面。\n\n[0010]本发明的另一目的在于提供一种微型发光二极管显示面板的制作方法，包括：\n\n[0011]提供一薄膜晶体管基板；\n\n[0012]在所述薄膜晶体管基板顶部开孔并制作底部电极，使所述底部电极的底端延伸至与所述薄膜晶体管基板的源极或漏极导通；\n\n[0013]将微型发光二极管芯片转移至所述底部电极上；\n\n[0014]制作第一钝化层，使所述第一钝化层完全覆盖所述微型发光二极管芯片、所述底部电极和所述薄膜晶体管基板上表面；\n\n[0015]在所述第一钝化层表面开设通孔，使所述微型发光二极管芯片暴露；\n\n[0016]在所述通孔内制作顶部电极。\n\n[0017]作为其中一种实施方式，将微型发光二极管芯片转移至所述底部电极上时，所述微型发光二极管芯片与所述底部电极之间通过所述键合层连接。\n\n[0018]作为其中一种实施方式，所述微型发光二极管芯片包括发光层、分别设于所述发光层两侧的N型半导体层和P型半导体层、设于所述P型半导体层表面的透明导电层以及设于所述透明导电层表面的P型金属电极；将微型发光二极管芯片转移至所述底部电极上时，所述N型半导体层通过所述键合层与所述底部电极键合；在所述通孔内制作顶部电极时，使所述顶部电极延伸至与所述P型金属电极表面接触。\n\n[0019]作为其中一种实施方式，所述薄膜晶体管基板还包括衬底、设于所述衬底上的缓冲层、设于所述缓冲层上的有源层、设于所述缓冲层上并覆盖所述有源层的栅极绝缘层、设于所述栅极绝缘层上的栅极、同时设于所述栅极绝缘层和所述栅极上的介电层以及覆盖于所述介电层上的第二钝化层，所述第二钝化层完全覆盖源极和漏极。\n\n[0020]作为其中一种实施方式，所述薄膜晶体管基板还包括平坦层，所述平坦层覆盖于所述第二钝化层表面，所述底部电极设于所述第二钝化层表面并贯穿所述第二钝化层，延伸至所述薄膜晶体管基板的源极或漏极表面。\n\n[0021]本发明通过直接在薄膜晶体管基板上制作连接有底部电极和顶部电极的微型发光二极管芯片，使得显示面板的厚度大幅减薄，并能同时实现窄边框显示的效果。并且，本发明微型发光二极管芯片旁的保护结构为整层的钝化层，无需多次制备工艺，简化了制作工序。\n\n附图说明\n\n[0022]图1为本发明实施例的Micro LED显示面板的结构示意图；\n\n[0023]图2为本发明实施例的Micro LED显示面板的制作方法流程图；\n\n[0024]图3为本发明实施例的Micro LED显示面板的一部分制作过程示意图；\n\n[0025]图4为本发明实施例的Micro LED显示面板的另一部分制作过程示意图。\n\n具体实施方式\n\n[0026]为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。\n\n[0027]参阅图1，本发明实施例的Micro LED显示面板包括薄膜晶体管基板10、设于薄膜晶体管基板10顶部的底部电极20、设于底部电极20上的微型发光二极管芯片30、设于微型发光二极管芯片30顶部的顶部电极40以及覆盖薄膜晶体管基板10和微型发光二极管芯片30的有机的第一钝化层50，底部电极20为多个，相互间隔地阵列设置在薄膜晶体管基板10顶部，底部电极20的底端延伸至与薄膜晶体管基板10的源极或漏极100导通，顶部电极40至少部分位于第一钝化层50外，其顶部贴合于第一钝化层50表面，以便方便地与驱动电路连接。\n\n[0028]具体地，微型发光二极管芯片30与底部电极20之间通过键合层60进行连接。微型发光二极管芯片30包括发光层31、分别设于发光层31两侧的N型半导体层32和P型半导体层33、设于P型半导体层33表面的透明导电层34以及设于透明导电层34表面的P型金属电极35，N型半导体层32通过键合层60与底部电极20键合，顶部电极40延伸至与P型金属电极35表面接触。\n\n[0029]通常，微型发光二极管芯片30的制作方法为：先在蓝宝石类的基板上通过分子束外延生长出发出各种颜色光线的微型发光二极管芯片30，然把微型发光二极管芯片30转移到玻璃基板上。微型发光二极管芯片30制作完成后，通过转印的方式利用键合层60与薄膜晶体管基板10上对应位置的底部电极20键合。\n\n[0030]薄膜晶体管基板10除了具有源极/漏极100外，还包括衬底11、设于衬底11上的缓冲层12、设于缓冲层12上的有源层13、设于缓冲层12上并覆盖有源层13的栅极绝缘层14、设于栅极绝缘层14上的栅极15、同时设于栅极绝缘层14和栅极15上的介电层16以及覆盖于介电层16上的第二钝化层17，第二钝化层17完全覆盖源极和漏极，可以在进行开孔时避免孔壁崩塌，源极/漏极100设于介电层16表面并延伸至与下方的有源层13导通。\n\n[0031]另外，薄膜晶体管基板10的表面还具体一层平坦层18，该平坦层18覆盖于第二钝化层17表面，可以保证底部电极20以及第一钝化层50具有平整的制作表面，底部电极20设于第二钝化层17表面并贯穿第二钝化层17，延伸至薄膜晶体管基板10的源极/漏极100表面。\n\n[0032]如图2～4所示，本发明的还提供了一种微型发光二极管显示面板的制作方法，包括：\n\n[0033]S01、提供一薄膜晶体管基板10，薄膜晶体管基板10包括源极/漏极100、衬底11、设于衬底11上的缓冲层12、设于缓冲层12上的有源层13、设于缓冲层12上并覆盖有源层13的栅极绝缘层14、设于栅极绝缘层14上的栅极15、同时设于栅极绝缘层14和栅极15上的介电层16/覆盖于介电层16上的第二钝化层17以及平坦层18，第二钝化层17完全覆盖源极和漏极，平坦层18覆盖于第二钝化层17表面，底部电极20设于第二钝化层17表面并贯穿第二钝化层17，延伸至薄膜晶体管基板10的源极或漏极100表面；\n\n[0034]S02、在薄膜晶体管基板10顶部开孔并制作底部电极20，使底部电极20的底端延伸至与薄膜晶体管基板10的源极或漏极100导通；\n\n[0035]S03、将微型发光二极管芯片30转移至底部电极20上，并使微型发光二极管芯片30与底部电极20之间通过键合层60连接；具体地，微型发光二极管芯片30包括发光层31、分别设于发光层31两侧的N型半导体层32和P型半导体层33、设于P型半导体层33表面的透明导电层34以及设于透明导电层34表面的P型金属电极35；将微型发光二极管芯片30转移至底部电极20上时，N型半导体层32通过键合层60与底部电极20键合；\n\n[0036]S04、制作第一钝化层50，使第一钝化层50完全覆盖微型发光二极管芯片30、底部电极20和薄膜晶体管基板10上表面；\n\n[0037]S05、在第一钝化层50表面开设通孔500，使微型发光二极管芯片30暴露；\n\n[0038]S06、在通孔500内制作顶部电极40，使顶部电极40与微型发光二极管芯片30导通，即，延伸至与P型金属电极35表面接触，且其顶部贴合于第一钝化层50表面。\n\n[0039]微型发光二极管芯片30四周完全被整层的第一钝化层50包围，只需要一次性制作出一层第一钝化层50将微型发光二极管芯片30掩埋于其中，随后再在第一钝化层50上方开设通孔500，即可使微型发光二极管芯片30暴露，从而方便地制作顶部电极40。\n\n[0040]由于本发明直接在薄膜晶体管基板上制作连接有底部电极和顶部电极的微型发光二极管芯片，微型发光二极管芯片直接通过键合的方式形成在薄膜晶体管基板表面的底部电极上，使得显示面板的厚度大幅减薄，并能同时实现窄边框显示的效果。并且，本发明微型发光二极管芯片旁的保护结构为整层的钝化层，无需多次制备工艺，简化了制作工序。\n\n[0041]以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10616, 23670, '技术领域\n\n[0001]本发明涉及半导体制作技术领域，尤其涉及一种微型发光二极管显示面板及其制作方法。\n\n背景技术\n\n[0002]Micro LED(微型发光二极管)面板的耗电量仅为LCD(Liquid Crystal Display，即液晶显示面板)的十分之一，与OLED(Organic Light-Emitting Diode，即有机发光二极管)面板一样属于自发光，能将像素之间的距离从毫米等级降至微米等级，色彩饱和度接近OLED。Micro LED系统的体积和重量可以再缩小，兼具低功耗、快速反应的特质，最重要的是没有OLED的色衰缺点。由于Micro LED具有上述优点，使其已逐渐成为最近面板行业研究的热点。\n\n[0003]Micro LED芯片制作在TFT(Thin Film Transistor，即薄膜晶体管)基板上时，其内的P型半导体层朝上，N型半导体层朝下。当光从下方的发光层进入P型半导体层时，由于上方的P型半导体层的全反射作用会导致部分光线重新进入发光层而转化为热量，再加上部分光被Micro LED芯片周围的有机层和底部的TFT基板吸收，会导致Micro LED面板正面出光效率降低。\n\n发明内容\n\n[0004]鉴于现有技术存在的不足，本发明提供了一种微型发光二极管显示面板及其制作方法，可以提高微型LED(即Micro LED)芯片的出光效率，进一步缩小Micro LED芯片尺寸，提高显示面板的分辨率。\n\n[0005]为了实现上述的目的，本发明采用了如下的技术方案：\n\n[0006]一种微型发光二极管显示面板的制作方法，包括：\n\n[0007]提供一薄膜晶体管基板(即TFT基板)；\n\n[0008]在所述薄膜晶体管基板顶部开设阵列设置的沟槽，以露出内部的源极或漏极；\n\n[0009]在所述薄膜晶体管基板顶部制作平坦层；\n\n[0010]在所述平坦层上挖孔，露出所述沟槽和对应的所述源极或漏极，使所述平坦层上形成连通所述沟槽的内壁为斜坡的喇叭孔；\n\n[0011]在所述喇叭孔和所述沟槽内制作出底部电极；\n\n[0012]将微型发光二极管芯片转移至所述底部电极的底面部分上；\n\n[0013]制作第一钝化层，使所述第一钝化层完全覆盖所述微型发光二极管芯片、所述底部电极和所述平坦层上表面；\n\n[0014]在所述第一钝化层表面开设通孔，使所述微型发光二极管芯片暴露；\n\n[0015]在所述通孔内制作顶部电极。\n\n[0016]作为其中一种实施方式，在所述喇叭孔和所述沟槽内制作出底部电极的步骤具体包括：\n\n[0017]采用真空镀膜法在所述喇叭孔和所述沟槽内制备一层反光层；\n\n[0018]利用掩膜板保护所述反光层在所述喇叭孔内的部分，并利用化学湿法刻蚀去除未受掩膜板保护的所述反光层的其余部分。\n\n[0019]作为其中一种实施方式，所述平坦层的厚度为2±1μm。\n\n[0020]作为其中一种实施方式，将微型发光二极管芯片转移至所述底部电极的底面部分上时，采用键合层将所述微型发光二极管芯片与所述底部电极进行键合。\n\n[0021]作为其中一种实施方式，所述微型发光二极管芯片包括发光层、分别设于所述发光层两侧的N型半导体层和P型半导体层；将微型发光二极管芯片转移至所述底部电极的底面部分上时，所述P型半导体层相对于所述N型半导体层更远离所述薄膜晶体管基板，且所述翻边部分的高度至少不低于所述发光层的高度。\n\n[0022]本发明的另一目的在于提供一种微型发光二极管显示面板，包括薄膜晶体管基板、设于所述薄膜晶体管基板顶部的底部电极、设于所述底部电极上的微型发光二极管芯片、设于所述微型发光二极管芯片顶部的顶部电极以及覆盖所述薄膜晶体管基板和所述微型发光二极管芯片的保护层，所述底部电极为多个，相互间隔地阵列设置在所述薄膜晶体管基板顶部；所述底部电极的底端延伸至与所述薄膜晶体管基板的源极或漏极导通，所述顶部电极至少部分位于所述保护层外；所述底部电极为反射型电极，且每个所述底部电极均包括贴合于所述薄膜晶体管基板顶面的底面部分和环绕每个对应的所述微型发光二极管芯片设置的一圈翻边部分，所述翻边部分呈扩口的喇叭状。\n\n[0023]作为其中一种实施方式，所述翻边部分的内壁呈弧面。\n\n[0024]作为其中一种实施方式，所述保护层包括平坦层和第一钝化层，所述平坦层设于所述薄膜晶体管基板顶面，且开设有朝顶部扩口的喇叭孔，所述底部电极嵌设于所述喇叭孔内，且所述翻边部分与所述喇叭孔内壁贴合；所述第一钝化层覆盖于所述平坦层顶面，且将所述底部电极、所述微型发光二极管芯片掩埋于其中，所述顶部电极部分嵌设于所述第一钝化层内。\n\n[0025]作为其中一种实施方式，所述微型发光二极管芯片包括发光层、分别设于所述发光层两侧的N型半导体层和P型半导体层；所述P型半导体层相对于所述N型半导体层更远离所述薄膜晶体管基板，且所述翻边部分的高度至少不低于所述发光层的高度。\n\n[0026]作为其中一种实施方式，所述平坦层的高度不高于所述翻边部分的高度。\n\n[0027]本发明的底部电极具有对微型发光二极管芯片发出的光线进行二次利用的反射结构，并能改善微型发光二极管芯片发出的光线被薄膜晶体管基板和外围的保护层吸收的状况，可以提高微型LED芯片的出光效率，因此，可以进一步缩小LED芯片尺寸，从而提高显示面板的分辨率。\n\n附图说明\n\n[0028]图1为本发明实施例的Micro LED显示面板的结构示意图；\n\n[0029]图2为本发明实施例的Micro LED显示面板的制作方法流程图；\n\n[0030]图3为本发明实施例的Micro LED显示面板的第一部分制作过程示意图；\n\n[0031]图4为本发明实施例的Micro LED显示面板的第二部分制作过程示意图；\n\n[0032]图5为本发明实施例的Micro LED显示面板的第三部分制作过程示意图；\n\n[0033]图6为本发明实施例的Micro LED显示面板的第四部分制作过程示意图。\n\n具体实施方式\n\n[0034]为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。\n\n[0035]参阅图1，本发明实施例的Micro LED显示面板主要包括TFT基板10、设于TFT基板10顶部的底部电极20、设于底部电极20上的Micro LED芯片30、设于Micro LED芯片30顶部的顶部电极40以及覆盖TFT基板10和Micro LED芯片30的保护层50，底部电极20为多个，相互间隔地阵列设置在TFT基板10顶部；底部电极20的底端延伸至与TFT基板10的源极或漏极100导通，顶部电极40至少部分位于保护层50外；底部电极20为碗形的反射型电极，且每个底部电极20均包括贴合于TFT基板10顶面的底面部分21和环绕每个对应的Micro LED芯片30设置的一圈翻边部分22，翻边部分22呈扩口的喇叭状。\n\n[0036]Micro LED芯片30包括发光层31、分别设于发光层31两侧的N型半导体层32和P型半导体层33、设于P型半导体层33表面的透明导电层34以及设于透明导电层34表面的P型金属电极35；P型半导体层33相对于N型半导体层32更远离TFT基板10，N型半导体层32通过键合层60与底部电极20键合，顶部电极40延伸至与P型金属电极35表面接触。\n\n[0037]作为其中一种实施方式，保护层50包括平坦层51和第一钝化层52，平坦层51设于TFT基板10顶面，且开设有朝顶部扩口的喇叭孔510，底部电极20嵌设于喇叭孔510内，且翻边部分22与喇叭孔510内壁贴合；第一钝化层52覆盖于平坦层51顶面，且将底部电极20、Micro LED芯片30掩埋于其中，顶部电极40部分嵌设于第一钝化层52内。\n\n[0038]该底部电极20为Ag等具有高反光特性的金属，Micro LED芯片30的N型半导体层32与底部电极20的底面部分21之间通过键合层60连接。Micro LED芯片30与底部电极20键合后，Micro LED芯片30位于碗形的底部电极20内，由于底部电极20具有底面部分21和与底面部分21连接的翻边部分22，一方面，底面部分21可以阻挡TFT基板10对于Micro LED芯片30发出光线的吸收作用，并且，射向底面部分21的光线可以被反射回Micro LED芯片30或翻边部分22进行二次利用；另一方面，翻边部分22环绕在Micro LED芯片30四周，可以阻止光线进入到吸光的有机平坦层51内，并且，由于翻边部分22呈扩口的喇叭状，可以将自底面部分21射向平坦层51的光线反射回，实现该部分光线的二次利用。因此，底部电极20从多方面提升了Micro LED芯片30的发光效率，使得Micro LED芯片30的尺寸可以做得更小也能满足发光要求，间接提升了显示面板的分辨率。\n\n[0039]更具体地，该翻边部分22的高度至少不低于发光层31的高度，平坦层51的高度也不高于翻边部分22的高度。本实施例所示的是翻边部分22的高度高于发光层31的高度、并与平坦层51表面平齐的情形，使得翻边部分22可以阻挡所有射向平坦层51的光线，并能最大限度地反射朝向四周发散的光线，同时，还方便翻边部分22的制作。\n\n[0040]本实施例中，该翻边部分22的内壁呈倾斜的平面，可以理解的是，在其他实施方式中，该翻边部分22的内壁也可以呈弧面，底面部分21内壁也可以呈弧面，使得底部电极20内表面为球面的一部分，使得更多的光线直接朝向显示面板前方出射。\n\n[0041]薄膜晶体管基板10除了具有源极/漏极100外，还包括衬底11、设于衬底11上的缓冲层12、设于缓冲层12上的有源层13、设于缓冲层12上并覆盖有源层13的栅极绝缘层14、设于栅极绝缘层14上的栅极15、同时设于栅极绝缘层14和栅极15上的介电层16以及覆盖于介电层16上的第二钝化层17，第二钝化层17完全覆盖源极和漏极，可以在进行开孔时避免孔壁崩塌，源极/漏极100设于介电层16表面并延伸至与下方的有源层13导通。\n\n[0042]平坦层51覆盖于第二钝化层17表面，可以保证底部电极20的底面部分21以及第一钝化层52具有平整的制作表面，底部电极20设于第二钝化层17表面并贯穿第二钝化层17，延伸至薄膜晶体管基板10的源极/漏极100表面。\n\n[0043]如图2～6，本发明还提供了一种Micro LED显示面板的制作方法，包括：\n\n[0044]S01：提供一TFT基板10；\n\n[0045]S02：在TFT基板10顶部开设阵列设置的沟槽10a，以露出内部的源极或漏极(如图3中的制程A)；\n\n[0046]S03：在TFT基板10顶部制作平坦层51(如图3中的制程B)，该平坦层51的厚度为2μm，其厚度可在±1μm内进行适度调整；\n\n[0047]S04：在平坦层51上挖孔，露出沟槽10a和对应的源极或漏极，使平坦层51上形成连通沟槽10a的内壁为斜坡的喇叭孔510(如图3中的制程C)；\n\n[0048]S05：在喇叭孔510和沟槽10a内制作出底部电极20，该底部电极20的底端延伸至与TFT基板10的源极或漏极100导通；如图4所示，首先，采用真空镀膜法在喇叭孔510和沟槽10a内制备一层反光层200(如图4的制程D)，然后，利用掩膜板保护反光层200在喇叭孔510内的部分，并利用化学湿法刻蚀去除未受掩膜板保护的反光层200的其余部分即可(如图4的制程E)；\n\n[0049]S06：将Micro LED芯片30转移至底部电极20的底面部分21上(如图5)；Micro LED芯片30的P型半导体层33相对于N型半导体层32更远离TFT基板10，将Micro LED芯片30转移至底部电极20的底面部分21上时，具体是采用键合层60将Micro LED芯片30的N型半导体层32通过键合层60与底部电极20的底面部分21进行键合，并使得翻边部分22的高度至少不低于发光层31的高度。\n\n[0050]S07：制作第一钝化层52，使第一钝化层52完全覆盖Micro LED芯片30、底部电极20和平坦层51上表面(如图6中的制程H)；\n\n[0051]S08：在第一钝化层52表面开设通孔520，使Micro LED芯片30暴露(如图6中的制程I)；\n\n[0052]S09：在通孔520内制作顶部电极40(如图6中的制程J)，顶部电极40底部位于通孔520内，延伸至与P型金属电极35表面接触，其顶部贴合于第一钝化层52表面。\n\n[0053]由于本发明的底部电极具有对微型发光二极管芯片发出的光线进行二次利用的反射结构，并能改善微型发光二极管芯片发出的光线被薄膜晶体管基板和外围的保护层吸收的状况，可以提高微型LED芯片的出光效率，因此，可以进一步缩小LED芯片尺寸，从而提高显示面板的分辨率。\n\n[0054]以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。', '技术领域\n\n[0001]本发明涉及半导体制作技术领域，尤其涉及一种微型发光二极管显示面板及其制作方法。\n\n背景技术\n\n[0002]Micro LED(微型发光二极管)面板的耗电量仅为LCD(Liquid Crystal Display，即液晶显示面板)的十分之一，与OLED(Organic Light-Emitting Diode，即有机发光二极管)面板一样属于自发光，能将像素之间的距离从毫米等级降至微米等级，色彩饱和度接近OLED。Micro LED系统的体积和重量可以再缩小，兼具低功耗、快速反应的特质，最重要的是没有OLED的色衰缺点。由于Micro LED具有上述优点，使其已逐渐成为最近面板行业研究的热点。\n\n[0003]Micro LED芯片制作在TFT(Thin Film Transistor，即薄膜晶体管)基板上时，其内的P型半导体层朝上，N型半导体层朝下。当光从下方的发光层进入P型半导体层时，由于上方的P型半导体层的全反射作用会导致部分光线重新进入发光层而转化为热量，再加上部分光被Micro LED芯片周围的有机层和底部的TFT基板吸收，会导致Micro LED面板正面出光效率降低。\n\n发明内容\n\n[0004]鉴于现有技术存在的不足，本发明提供了一种微型发光二极管显示面板及其制作方法，可以提高微型LED(即Micro LED)芯片的出光效率，进一步缩小Micro LED芯片尺寸，提高显示面板的分辨率。\n\n[0005]为了实现上述的目的，本发明采用了如下的技术方案：\n\n[0006]一种微型发光二极管显示面板的制作方法，包括：\n\n[0007]提供一薄膜晶体管基板(即TFT基板)；\n\n[0008]在所述薄膜晶体管基板顶部开设阵列设置的沟槽，以露出内部的源极或漏极；\n\n[0009]在所述薄膜晶体管基板顶部制作平坦层；\n\n[0010]在所述平坦层上挖孔，露出所述沟槽和对应的所述源极或漏极，使所述平坦层上形成连通所述沟槽的内壁为斜坡的喇叭孔；\n\n[0011]在所述喇叭孔和所述沟槽内制作出底部电极；\n\n[0012]将微型发光二极管芯片转移至所述底部电极的底面部分上；\n\n[0013]制作第一钝化层，使所述第一钝化层完全覆盖所述微型发光二极管芯片、所述底部电极和所述平坦层上表面；\n\n[0014]在所述第一钝化层表面开设通孔，使所述微型发光二极管芯片暴露；\n\n[0015]在所述通孔内制作顶部电极。\n\n[0016]作为其中一种实施方式，在所述喇叭孔和所述沟槽内制作出底部电极的步骤具体包括：\n\n[0017]采用真空镀膜法在所述喇叭孔和所述沟槽内制备一层反光层；\n\n[0018]利用掩膜板保护所述反光层在所述喇叭孔内的部分，并利用化学湿法刻蚀去除未受掩膜板保护的所述反光层的其余部分。\n\n[0019]作为其中一种实施方式，所述平坦层的厚度为2±1μm。\n\n[0020]作为其中一种实施方式，将微型发光二极管芯片转移至所述底部电极的底面部分上时，采用键合层将所述微型发光二极管芯片与所述底部电极进行键合。\n\n[0021]作为其中一种实施方式，所述微型发光二极管芯片包括发光层、分别设于所述发光层两侧的N型半导体层和P型半导体层；将微型发光二极管芯片转移至所述底部电极的底面部分上时，所述P型半导体层相对于所述N型半导体层更远离所述薄膜晶体管基板，且所述翻边部分的高度至少不低于所述发光层的高度。\n\n[0022]本发明的另一目的在于提供一种微型发光二极管显示面板，包括薄膜晶体管基板、设于所述薄膜晶体管基板顶部的底部电极、设于所述底部电极上的微型发光二极管芯片、设于所述微型发光二极管芯片顶部的顶部电极以及覆盖所述薄膜晶体管基板和所述微型发光二极管芯片的保护层，所述底部电极为多个，相互间隔地阵列设置在所述薄膜晶体管基板顶部；所述底部电极的底端延伸至与所述薄膜晶体管基板的源极或漏极导通，所述顶部电极至少部分位于所述保护层外；所述底部电极为反射型电极，且每个所述底部电极均包括贴合于所述薄膜晶体管基板顶面的底面部分和环绕每个对应的所述微型发光二极管芯片设置的一圈翻边部分，所述翻边部分呈扩口的喇叭状。\n\n[0023]作为其中一种实施方式，所述翻边部分的内壁呈弧面。\n\n[0024]作为其中一种实施方式，所述保护层包括平坦层和第一钝化层，所述平坦层设于所述薄膜晶体管基板顶面，且开设有朝顶部扩口的喇叭孔，所述底部电极嵌设于所述喇叭孔内，且所述翻边部分与所述喇叭孔内壁贴合；所述第一钝化层覆盖于所述平坦层顶面，且将所述底部电极、所述微型发光二极管芯片掩埋于其中，所述顶部电极部分嵌设于所述第一钝化层内。\n\n[0025]作为其中一种实施方式，所述微型发光二极管芯片包括发光层、分别设于所述发光层两侧的N型半导体层和P型半导体层；所述P型半导体层相对于所述N型半导体层更远离所述薄膜晶体管基板，且所述翻边部分的高度至少不低于所述发光层的高度。\n\n[0026]作为其中一种实施方式，所述平坦层的高度不高于所述翻边部分的高度。\n\n[0027]本发明的底部电极具有对微型发光二极管芯片发出的光线进行二次利用的反射结构，并能改善微型发光二极管芯片发出的光线被薄膜晶体管基板和外围的保护层吸收的状况，可以提高微型LED芯片的出光效率，因此，可以进一步缩小LED芯片尺寸，从而提高显示面板的分辨率。\n\n附图说明\n\n[0028]图1为本发明实施例的Micro LED显示面板的结构示意图；\n\n[0029]图2为本发明实施例的Micro LED显示面板的制作方法流程图；\n\n[0030]图3为本发明实施例的Micro LED显示面板的第一部分制作过程示意图；\n\n[0031]图4为本发明实施例的Micro LED显示面板的第二部分制作过程示意图；\n\n[0032]图5为本发明实施例的Micro LED显示面板的第三部分制作过程示意图；\n\n[0033]图6为本发明实施例的Micro LED显示面板的第四部分制作过程示意图。\n\n具体实施方式\n\n[0034]为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。\n\n[0035]参阅图1，本发明实施例的Micro LED显示面板主要包括TFT基板10、设于TFT基板10顶部的底部电极20、设于底部电极20上的Micro LED芯片30、设于Micro LED芯片30顶部的顶部电极40以及覆盖TFT基板10和Micro LED芯片30的保护层50，底部电极20为多个，相互间隔地阵列设置在TFT基板10顶部；底部电极20的底端延伸至与TFT基板10的源极或漏极100导通，顶部电极40至少部分位于保护层50外；底部电极20为碗形的反射型电极，且每个底部电极20均包括贴合于TFT基板10顶面的底面部分21和环绕每个对应的Micro LED芯片30设置的一圈翻边部分22，翻边部分22呈扩口的喇叭状。\n\n[0036]Micro LED芯片30包括发光层31、分别设于发光层31两侧的N型半导体层32和P型半导体层33、设于P型半导体层33表面的透明导电层34以及设于透明导电层34表面的P型金属电极35；P型半导体层33相对于N型半导体层32更远离TFT基板10，N型半导体层32通过键合层60与底部电极20键合，顶部电极40延伸至与P型金属电极35表面接触。\n\n[0037]作为其中一种实施方式，保护层50包括平坦层51和第一钝化层52，平坦层51设于TFT基板10顶面，且开设有朝顶部扩口的喇叭孔510，底部电极20嵌设于喇叭孔510内，且翻边部分22与喇叭孔510内壁贴合；第一钝化层52覆盖于平坦层51顶面，且将底部电极20、Micro LED芯片30掩埋于其中，顶部电极40部分嵌设于第一钝化层52内。\n\n[0038]该底部电极20为Ag等具有高反光特性的金属，Micro LED芯片30的N型半导体层32与底部电极20的底面部分21之间通过键合层60连接。Micro LED芯片30与底部电极20键合后，Micro LED芯片30位于碗形的底部电极20内，由于底部电极20具有底面部分21和与底面部分21连接的翻边部分22，一方面，底面部分21可以阻挡TFT基板10对于Micro LED芯片30发出光线的吸收作用，并且，射向底面部分21的光线可以被反射回Micro LED芯片30或翻边部分22进行二次利用；另一方面，翻边部分22环绕在Micro LED芯片30四周，可以阻止光线进入到吸光的有机平坦层51内，并且，由于翻边部分22呈扩口的喇叭状，可以将自底面部分21射向平坦层51的光线反射回，实现该部分光线的二次利用。因此，底部电极20从多方面提升了Micro LED芯片30的发光效率，使得Micro LED芯片30的尺寸可以做得更小也能满足发光要求，间接提升了显示面板的分辨率。\n\n[0039]更具体地，该翻边部分22的高度至少不低于发光层31的高度，平坦层51的高度也不高于翻边部分22的高度。本实施例所示的是翻边部分22的高度高于发光层31的高度、并与平坦层51表面平齐的情形，使得翻边部分22可以阻挡所有射向平坦层51的光线，并能最大限度地反射朝向四周发散的光线，同时，还方便翻边部分22的制作。\n\n[0040]本实施例中，该翻边部分22的内壁呈倾斜的平面，可以理解的是，在其他实施方式中，该翻边部分22的内壁也可以呈弧面，底面部分21内壁也可以呈弧面，使得底部电极20内表面为球面的一部分，使得更多的光线直接朝向显示面板前方出射。\n\n[0041]薄膜晶体管基板10除了具有源极/漏极100外，还包括衬底11、设于衬底11上的缓冲层12、设于缓冲层12上的有源层13、设于缓冲层12上并覆盖有源层13的栅极绝缘层14、设于栅极绝缘层14上的栅极15、同时设于栅极绝缘层14和栅极15上的介电层16以及覆盖于介电层16上的第二钝化层17，第二钝化层17完全覆盖源极和漏极，可以在进行开孔时避免孔壁崩塌，源极/漏极100设于介电层16表面并延伸至与下方的有源层13导通。\n\n[0042]平坦层51覆盖于第二钝化层17表面，可以保证底部电极20的底面部分21以及第一钝化层52具有平整的制作表面，底部电极20设于第二钝化层17表面并贯穿第二钝化层17，延伸至薄膜晶体管基板10的源极/漏极100表面。\n\n[0043]如图2～6，本发明还提供了一种Micro LED显示面板的制作方法，包括：\n\n[0044]S01：提供一TFT基板10；\n\n[0045]S02：在TFT基板10顶部开设阵列设置的沟槽10a，以露出内部的源极或漏极(如图3中的制程A)；\n\n[0046]S03：在TFT基板10顶部制作平坦层51(如图3中的制程B)，该平坦层51的厚度为2μm，其厚度可在±1μm内进行适度调整；\n\n[0047]S04：在平坦层51上挖孔，露出沟槽10a和对应的源极或漏极，使平坦层51上形成连通沟槽10a的内壁为斜坡的喇叭孔510(如图3中的制程C)；\n\n[0048]S05：在喇叭孔510和沟槽10a内制作出底部电极20，该底部电极20的底端延伸至与TFT基板10的源极或漏极100导通；如图4所示，首先，采用真空镀膜法在喇叭孔510和沟槽10a内制备一层反光层200(如图4的制程D)，然后，利用掩膜板保护反光层200在喇叭孔510内的部分，并利用化学湿法刻蚀去除未受掩膜板保护的反光层200的其余部分即可(如图4的制程E)；\n\n[0049]S06：将Micro LED芯片30转移至底部电极20的底面部分21上(如图5)；Micro LED芯片30的P型半导体层33相对于N型半导体层32更远离TFT基板10，将Micro LED芯片30转移至底部电极20的底面部分21上时，具体是采用键合层60将Micro LED芯片30的N型半导体层32通过键合层60与底部电极20的底面部分21进行键合，并使得翻边部分22的高度至少不低于发光层31的高度。\n\n[0050]S07：制作第一钝化层52，使第一钝化层52完全覆盖Micro LED芯片30、底部电极20和平坦层51上表面(如图6中的制程H)；\n\n[0051]S08：在第一钝化层52表面开设通孔520，使Micro LED芯片30暴露(如图6中的制程I)；\n\n[0052]S09：在通孔520内制作顶部电极40(如图6中的制程J)，顶部电极40底部位于通孔520内，延伸至与P型金属电极35表面接触，其顶部贴合于第一钝化层52表面。\n\n[0053]由于本发明的底部电极具有对微型发光二极管芯片发出的光线进行二次利用的反射结构，并能改善微型发光二极管芯片发出的光线被薄膜晶体管基板和外围的保护层吸收的状况，可以提高微型LED芯片的出光效率，因此，可以进一步缩小LED芯片尺寸，从而提高显示面板的分辨率。\n\n[0054]以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10617, 23671, '技术领域\n\n[0001]本发明涉及微发光二极管(Micro LED)的制造领域，具体地，涉及微发光二极管的精确转移。\n\n背景技术\n\n[0002]为了制造发光二极管显示器，在微发光二极管的制造领域中需要把微小的发光二极管从原始衬底转移到接收基板排列成阵列。故而在该领域中，存在巨量且微小的发光二极管精确转移的问题。\n\n[0003]另一方面，形状记忆合金是一种在温度变化后能完全消除其在原始温度下发生的变形，从而恢复其变形前的原始形状的合金材料。这是因为当温度达到某一数值时，材料内部的晶体结构会发生变化，从而导致了外形的变化。其中，电磁力是构成形状记忆合金的主要内聚力。\n\n发明内容\n\n[0004]为了至少解决微发光二极管精确转移的问题，本发明提出了一种用于转移微发光二极管的转移头以及一种用于转移微发光二极管的转移方法。\n\n[0005]根据本发明的一个方面，提供了一种转移微发光二极管的转移头，所述转移头可以包括：抓取部，由记忆合金形成，包括指状部分；温度控制元件，被构造为连接到抓取部，且控制抓取部的温度。根据所要转移的微发光二极管，所述指状部分可以被构造为：在第一温度下舒展，足以与微发光二极管分离；在第二温度下收缩，足以抓取微发光二极管。\n\n[0006]根据示例性实施例，所述转移头还可以包括：承载部件，用于承载抓取部和温度控制元件。\n\n[0007]根据示例性实施例，温度控制元件可以完全嵌入承载部件，抓取部可以部分地嵌入承载部件。\n\n[0008]根据示例性实施例，抓取部还可以包括：固定部分，嵌入温度控制元件中；主体部分，连接固定部分和指状部分，形成在温度控制元件和承载部件的表面上。\n\n[0009]根据示例性实施例，抓取部可以为在通过溅射沉积和晶化热处理而形成记忆合金薄膜后在加工温度下加工形成。\n\n[0010]根据示例性实施例，记忆合金可以包括Au-Cd、Ag-Cd、Cu-Zn、Cu-Zn-Al、Cu-Zn-Sn、Cu-Zn-Si、Cu-Sn、Cu-Zn-Ga、In-Ti、Au-Cu-Zn、NiAl、Fe-Pt、Ti-Ni、Ti-Ni-Pd、Ti-Nb、U-Nb和Fe-Mn-Si中的至少一种。\n\n[0011]根据示例性实施例，指状部分的长度可以为微发光二极管的高度的1倍至1.5倍，舒展的指状部分之间的最大距离可以为微发光二极管的宽度的1.5倍至2倍。\n\n[0012]根据本发明的另一方面，提供了一种用于转移微发光二极管的转移方法，所述转移方法可以包括：在第一温度下将上述转移头移动到被提供在基板上的微发光二极管的上方；驱动温度控制元件使得转移头的抓取部的温度从第一温度变为第二温度，抓取部收缩将微发光二极管抓取，转移至目标基板；驱动温度控制元件使得转移头的抓取部的温度从第二温度变为第三温度，抓取部舒展，使得转移头与微发光二极管分开。\n\n[0013]根据示例性实施例，转移头抓取微发光二极管的作用力足以克服微发光二极管与提供微发光二极管的基板之间的作用力以及微发光二极管的重力。\n\n[0014]根据示例性实施例，在将转移头移动到被提供在基板上的微发光二极管的上方的步骤中，转移头与微发光二极管之间的距离可以为1μm至3μm。\n\n[0015]本发明的转移头和转移方法利用包括形状记忆合金的抓取部，可以降低微发光二极管的转移难度，提高微发光二极管的转移效率。\n\n附图说明\n\n[0016]通过下面结合附图进行的描述，本发明的上述和其他目的和特点将会变得更加清楚，其中：\n\n[0017]图1示出了根据示例性实施例的用于转移微发光二极管的转移头；\n\n[0018]图2示出了根据示例性实施例的用于转移微发光二极管的转移头的工作原理；\n\n[0019]图3示出了根据另一示例性实施例的用于转移微发光二极管的转移头；\n\n[0020]图4至图16示出了根据本公开的示例性实施例的微发光二极管的制造方法。\n\n具体实施方式\n\n[0021]在下文中，将参照附图更充分地描述本发明。本领域技术人员将理解的是，在不脱离本公开的精神或范围的情况下，可以以各种不同的方式修改所描述的实施例。将省略对与发明构思无关的现有技术和公知常识的描述，以避免使发明构思不必要地模糊。\n\n[0022]图1示出了根据示例性实施例的用于转移微发光二极管的转移头。图2示出了根据示例性实施例的用于转移微发光二极管的转移头的工作原理。图3示出了根据另一示例性实施例的用于转移微发光二极管的转移头。\n\n[0023]参照图1，根据示例性实施例的用于转移微发光二极管的转移头1可以包括承载部件10、温度控制元件20以及抓取部30。\n\n[0024]承载部件10可以承载温度控制元件20。如图1所示，温度控制元件20可以完全嵌入具有基本上盒子形状的承载部件10，但本发明不限于此。例如，温度控制元件20可以部分嵌入承载部件10。例如，温度控制元件20可以仅附接到承载部件的表面上而不嵌入承载部件10。\n\n[0025]如图1所示，温度控制元件20可以设置在承载部件10中并连接到抓取部30。温度控制元件20可以接触抓取部30的至少一部分。温度控制元件20可以对抓取部30的温度进行控制。例如，温度控制元件20可以使抓取部30的温度从第一温度(例如室温)变化为与第一温度不同的第二温度，也可使抓取部30的温度从第二温度变回第一温度。例如，第二温度可以高于第一温度，但示例性实施例不限于此。\n\n[0026]温度控制元件20可以包括诸如电热丝、射频模块等的升温模块以及诸如冷却流体等的降温模块。温度控制元件20可以通过升温模块使抓取部30的温度升高，温度控制元件20可以通过降温模块等使抓取部30的温度降低。然而，本发明不限于此，温度控制元件20可以包括其他类型的升温模块和降温模块。\n\n[0027]抓取部30可以包括形状记忆合金。所述形状记忆合金可以包括Au-Cd、Ag-Cd、Cu-Zn、Cu-Zn-Al、Cu-Zn-Sn、Cu-Zn-Si、Cu-Sn、Cu-Zn-Ga、In-Ti、Au-Cu-Zn、NiAl、Fe-Pt、Ti-Ni、Ti-Ni-Pd、Ti-Nb、U-Nb和Fe-Mn-Si等合金。\n\n[0028]如图1所示，抓取部30的至少一部分可以嵌入(例如，部分嵌入)承载部件10并且抓取部30的至少一部分可以连接到(例如接触)温度控制元件20以使得抓取部30的温度能够被调整。抓取部30可以包括用于抓取一个微发光二极管290的两个或更多个指状部分31。\n\n[0029]参照图2，利用转移头1对微发光二极管290进行转移。首先通过温度控制元件20使得抓取部30的温度从第一温度(例如室温)变为第二温度。第二温度可以高于第一温度，并且等于或高于转移温度，其中，转移温度为使得指状部分31的收缩幅度足以“抓”起微发光二极管290进行转移的最低温度。在转移头1将微发光二极管290转移至目标区域后，通过温度控制元件20使得抓取部30的温度从第二温度变为第三温度(例如室温)。第三温度可以低于第二温度，并且等于或低于分离温度，其中，分离温度为使得指状部分31舒展从而与微发光二极管290分离的最高温度。\n\n[0030]虽然在上述示例性实施例中转移温度高于分离温度，但本发明不限于此。例如，转移温度可以低于分离温度。在这种情况下，转移温度为使得指状部分31的收缩幅度足以“抓”起微发光二极管290进行转移的最高温度，分离温度为使得指状部分31舒展从而与微发光二极管290分离的最低温度。第二温度低于第一温度，并且等于或低于转移温度。第三温度高于第二温度，并且等于或高于分离温度。\n\n[0031]根据示例性实施，抓取部30还可以包括主体部分32和固定部分33，主体部分32和固定部分33可以嵌入承载部件10。两个或更多个指状部分31从主体部分32的多个端部分别朝向承载部件10的外部延伸，固定部分33从主体部分32的中部朝向温度控制元件20延伸。主体部分32可以形成在温度控制元件20的一个表面上并嵌入承载部件10。固定部分33可以嵌入温度控制元件20。温度控制元件20嵌入(例如，完全嵌入)承载部件10，并且抓取部30嵌入(例如，部分嵌入)承载部件10，这样的设置可以增加抓取部30在转移过程中的稳定性。然而，本发明不限于此。例如，抓取部30可以不包括固定部分33或主体部分32。例如，抓取部30可以仅包括指状部分31。例如，抓取部30可以为由记忆合金形成的其他结构的能实现转移功能的元件。例如，转移头1可以不包括承载部件10，而抓取部30由温度控制元件20承载。\n\n[0032]可以通过溅射沉积、适当的晶化热处理来形成形状记忆合金薄膜。之后，根据所要转移的微发光二极管(例如其尺寸、形状等)，在特定的加工温度下将形状记忆合金薄膜加工成抓取部30，使得指状部分31的收缩幅度足以“抓”起微发光二极管(例如，收缩幅度可以完全包覆微发光二极管)进行转移。同时，指状部分31在等于或低于分离温度的情况下可以舒展，从而与微发光二极管完全分离。例如，指状部分的长度为微发光二极管的高度的1倍至1.5倍，舒展的指状部分之间的最大距离为微发光二极管的宽度的1.5倍至2倍。\n\n[0033]参照图3，根据另一示例性实施例的用于转移微发光二极管的转移头2可以包括承载部件11、多个温度控制元件20以及多个抓取部30。除了元件的尺寸和数量之外，转移头2的承载部件11、多个温度控制元件20以及多个抓取部30与转移头1的对应元件相同或基本相同，因此省略其重复描述。在转移头2中，因为包括分离的多个温度控制元件20，因此多个抓取部30可以被分别控制。\n\n[0034]图4至图16示出了根据本公开的示例性实施例的微发光二极管290的制造方法。图4至图12示出了在将微发光二极管290转移到接收基板600之前的步骤，图13至图15示出了将微发光二极管290转移到接收基板600的步骤，图16示出了在将微发光二极管290转移到接收基板600之后的步骤。\n\n[0035]参照图4，在母板100上形成半导体层200。可以利用金属有机化学气相沉积(MOCVD)的方法形成半导体层200，但本发明不限于此。可以利用物理气相沉积方法、其他的化学气相沉积的方法等各种适当的方法形成半导体层。之后在半导体层200上形成光致抗蚀剂图案PR，以对半导体层200图案化，从而定义微发光二极管图案。\n\n[0036]参照图5，对半导体层200进行刻蚀形成多个微发光二极管图案210，剥离光致抗蚀剂图案PR，并在所述多个微发光二极管图案210上形成绝缘层300。单个微发光二极管图案210可以对应于一个微发光二极管。绝缘层300可以为单层或多层。单层或多层中的每层可以为有机绝缘层或无机绝缘层。\n\n[0037]参照图6，在绝缘层300上形成光致抗蚀剂图案PR，以对绝缘层300图案化，从而为每个微发光二极管图案210均定义一个电极开孔215。\n\n[0038]参照图7，对绝缘层300进行刻蚀并剥离光致抗蚀剂图案PR。绝缘层300可以形成为多个绝缘图案220，每个绝缘图案220对应于一个微发光二极管图案210，从而便于后续的转移操作。另外，在每个绝缘图案220中形成一个电极开孔215。\n\n[0039]参照图8，在绝缘图案220上沉积金属膜层400。金属膜层400也形成在每个电极开孔215中，从而可以用作微发光二极管的绑定点。\n\n[0040]参照图9，在金属膜层400上形成光致抗蚀剂图案PR，以对金属膜层400图案化，从而为每个微发光二极管图案210均定义一个金属电极图案230。\n\n[0041]参照图10，对金属膜层400进行刻蚀并剥离光致抗蚀剂图案PR，以形成多个金属电极图案230。每个金属电极图案230均形成在对应的绝缘图案220上，并通过对应的电极开孔215连接到对应的微发光二极管图案210。现在，每个微发光二极管图案210和对应的绝缘图案220以及金属电极图案230可以构成一个微发光二极管290。\n\n[0042]参照图11，将多个微发光二极管290共同附接到转移基板500，从而多个微发光二极管290位于母板100与转移基板500之间。例如，绝缘图案220和金属电极图案230可以与转移基板500接触。\n\n[0043]参照图12，剥离母板100，从而形成了待转移的多个微发光二极管290。\n\n[0044]下面将参照图13至图15描述微发光二极管290的转移方法。虽然图13至图15描述的转移方法以转移微发光二极管290为示例，但是本发明不限于此，而是可以利用图13至图15描述的方法转移任何合适的微发光二极管。\n\n[0045]参照图13，在第一温度(例如，室温)下，转移头1的抓取部30处于舒展状态。将转移头1精细移动至需要转移的微发光二极管290的上方，转移头1(不包括抓取部30的指状部分31)与微发光二极管290的距离为1μm至3μm。指状部分31在微发光二极管290的侧部舒展，不与微发光二极管290接触，或仅与微发光二极管290轻微接触而几乎不产生压力。\n\n[0046]之后，驱动温度控制元件20使得抓取部30的温度从第一温度升为第二温度，第二温度等于或高于转移温度，其中，转移温度为使得指状部分31的收缩幅度足以“抓”起微发光二极管290进行转移的最低温度。在抓取部30升温至第二温度时，抓取部30将微发光二极管290至少部分地包覆，转移头1与微发光二极管290固定相接。\n\n[0047]参照图14，转移头1抓取微发光二极管290。转移头1抓取微发光二极管290的作用力足以克服微发光二极管290与转移基板500之间的作用力以及微发光二极管290的重力。随后，转移头1将微发光二极管290转移到接收基板600。另外，将微发光二极管290的底部与接收基板600进行绑定。根据示例性实施例，将微发光二极管290的金属电极图案230与接收基板600上的布线610进行绑定。\n\n[0048]参照图15，在进行上述绑定后，驱动温度控制元件20使得抓取部30的温度从第二温度降为第三温度(例如室温)，第三温度等于或低于分离温度，其中，分离温度为使得指状部分31舒展从而与微发光二极管290分离的最高温度。在抓取部30降温至第三温度时，抓取部30呈舒展状，从而转移头1与微发光二极管290可以分离。\n\n[0049]至此，完成了将发光二极管290转移到接收基板600的操作。\n\n[0050]本发明的转移头和转移方法利用包括形状记忆合金的抓取部，可以降低微发光二极管的转移难度，提高微发光二极管的转移效率。\n\n[0051]另外，图16示出了在将微发光二极管290转移到接收基板600之后的步骤。通过进一步对微发光二极管290进行封装以及对电极的图案化，可以得到最终的微发光二极管封装件1000。\n\n[0052]对于本领域的技术人员将清楚的是，在不脱离本发明的精神或范围的情况下，可以在本发明中做出各种修改和变化。因此，如果本发明的修改和变化落入权利要求及其等同物的范围内，那么本发明意图覆盖本发明的这些修改和变化。', '技术领域\n\n[0001]本发明涉及微发光二极管(Micro LED)的制造领域，具体地，涉及微发光二极管的精确转移。\n\n背景技术\n\n[0002]为了制造发光二极管显示器，在微发光二极管的制造领域中需要把微小的发光二极管从原始衬底转移到接收基板排列成阵列。故而在该领域中，存在巨量且微小的发光二极管精确转移的问题。\n\n[0003]另一方面，形状记忆合金是一种在温度变化后能完全消除其在原始温度下发生的变形，从而恢复其变形前的原始形状的合金材料。这是因为当温度达到某一数值时，材料内部的晶体结构会发生变化，从而导致了外形的变化。其中，电磁力是构成形状记忆合金的主要内聚力。\n\n发明内容\n\n[0004]为了至少解决微发光二极管精确转移的问题，本发明提出了一种用于转移微发光二极管的转移头以及一种用于转移微发光二极管的转移方法。\n\n[0005]根据本发明的一个方面，提供了一种转移微发光二极管的转移头，所述转移头可以包括：抓取部，由记忆合金形成，包括指状部分；温度控制元件，被构造为连接到抓取部，且控制抓取部的温度。根据所要转移的微发光二极管，所述指状部分可以被构造为：在第一温度下舒展，足以与微发光二极管分离；在第二温度下收缩，足以抓取微发光二极管。\n\n[0006]根据示例性实施例，所述转移头还可以包括：承载部件，用于承载抓取部和温度控制元件。\n\n[0007]根据示例性实施例，温度控制元件可以完全嵌入承载部件，抓取部可以部分地嵌入承载部件。\n\n[0008]根据示例性实施例，抓取部还可以包括：固定部分，嵌入温度控制元件中；主体部分，连接固定部分和指状部分，形成在温度控制元件和承载部件的表面上。\n\n[0009]根据示例性实施例，抓取部可以为在通过溅射沉积和晶化热处理而形成记忆合金薄膜后在加工温度下加工形成。\n\n[0010]根据示例性实施例，记忆合金可以包括Au-Cd、Ag-Cd、Cu-Zn、Cu-Zn-Al、Cu-Zn-Sn、Cu-Zn-Si、Cu-Sn、Cu-Zn-Ga、In-Ti、Au-Cu-Zn、NiAl、Fe-Pt、Ti-Ni、Ti-Ni-Pd、Ti-Nb、U-Nb和Fe-Mn-Si中的至少一种。\n\n[0011]根据示例性实施例，指状部分的长度可以为微发光二极管的高度的1倍至1.5倍，舒展的指状部分之间的最大距离可以为微发光二极管的宽度的1.5倍至2倍。\n\n[0012]根据本发明的另一方面，提供了一种用于转移微发光二极管的转移方法，所述转移方法可以包括：在第一温度下将上述转移头移动到被提供在基板上的微发光二极管的上方；驱动温度控制元件使得转移头的抓取部的温度从第一温度变为第二温度，抓取部收缩将微发光二极管抓取，转移至目标基板；驱动温度控制元件使得转移头的抓取部的温度从第二温度变为第三温度，抓取部舒展，使得转移头与微发光二极管分开。\n\n[0013]根据示例性实施例，转移头抓取微发光二极管的作用力足以克服微发光二极管与提供微发光二极管的基板之间的作用力以及微发光二极管的重力。\n\n[0014]根据示例性实施例，在将转移头移动到被提供在基板上的微发光二极管的上方的步骤中，转移头与微发光二极管之间的距离可以为1μm至3μm。\n\n[0015]本发明的转移头和转移方法利用包括形状记忆合金的抓取部，可以降低微发光二极管的转移难度，提高微发光二极管的转移效率。\n\n附图说明\n\n[0016]通过下面结合附图进行的描述，本发明的上述和其他目的和特点将会变得更加清楚，其中：\n\n[0017]图1示出了根据示例性实施例的用于转移微发光二极管的转移头；\n\n[0018]图2示出了根据示例性实施例的用于转移微发光二极管的转移头的工作原理；\n\n[0019]图3示出了根据另一示例性实施例的用于转移微发光二极管的转移头；\n\n[0020]图4至图16示出了根据本公开的示例性实施例的微发光二极管的制造方法。\n\n具体实施方式\n\n[0021]在下文中，将参照附图更充分地描述本发明。本领域技术人员将理解的是，在不脱离本公开的精神或范围的情况下，可以以各种不同的方式修改所描述的实施例。将省略对与发明构思无关的现有技术和公知常识的描述，以避免使发明构思不必要地模糊。\n\n[0022]图1示出了根据示例性实施例的用于转移微发光二极管的转移头。图2示出了根据示例性实施例的用于转移微发光二极管的转移头的工作原理。图3示出了根据另一示例性实施例的用于转移微发光二极管的转移头。\n\n[0023]参照图1，根据示例性实施例的用于转移微发光二极管的转移头1可以包括承载部件10、温度控制元件20以及抓取部30。\n\n[0024]承载部件10可以承载温度控制元件20。如图1所示，温度控制元件20可以完全嵌入具有基本上盒子形状的承载部件10，但本发明不限于此。例如，温度控制元件20可以部分嵌入承载部件10。例如，温度控制元件20可以仅附接到承载部件的表面上而不嵌入承载部件10。\n\n[0025]如图1所示，温度控制元件20可以设置在承载部件10中并连接到抓取部30。温度控制元件20可以接触抓取部30的至少一部分。温度控制元件20可以对抓取部30的温度进行控制。例如，温度控制元件20可以使抓取部30的温度从第一温度(例如室温)变化为与第一温度不同的第二温度，也可使抓取部30的温度从第二温度变回第一温度。例如，第二温度可以高于第一温度，但示例性实施例不限于此。\n\n[0026]温度控制元件20可以包括诸如电热丝、射频模块等的升温模块以及诸如冷却流体等的降温模块。温度控制元件20可以通过升温模块使抓取部30的温度升高，温度控制元件20可以通过降温模块等使抓取部30的温度降低。然而，本发明不限于此，温度控制元件20可以包括其他类型的升温模块和降温模块。\n\n[0027]抓取部30可以包括形状记忆合金。所述形状记忆合金可以包括Au-Cd、Ag-Cd、Cu-Zn、Cu-Zn-Al、Cu-Zn-Sn、Cu-Zn-Si、Cu-Sn、Cu-Zn-Ga、In-Ti、Au-Cu-Zn、NiAl、Fe-Pt、Ti-Ni、Ti-Ni-Pd、Ti-Nb、U-Nb和Fe-Mn-Si等合金。\n\n[0028]如图1所示，抓取部30的至少一部分可以嵌入(例如，部分嵌入)承载部件10并且抓取部30的至少一部分可以连接到(例如接触)温度控制元件20以使得抓取部30的温度能够被调整。抓取部30可以包括用于抓取一个微发光二极管290的两个或更多个指状部分31。\n\n[0029]参照图2，利用转移头1对微发光二极管290进行转移。首先通过温度控制元件20使得抓取部30的温度从第一温度(例如室温)变为第二温度。第二温度可以高于第一温度，并且等于或高于转移温度，其中，转移温度为使得指状部分31的收缩幅度足以“抓”起微发光二极管290进行转移的最低温度。在转移头1将微发光二极管290转移至目标区域后，通过温度控制元件20使得抓取部30的温度从第二温度变为第三温度(例如室温)。第三温度可以低于第二温度，并且等于或低于分离温度，其中，分离温度为使得指状部分31舒展从而与微发光二极管290分离的最高温度。\n\n[0030]虽然在上述示例性实施例中转移温度高于分离温度，但本发明不限于此。例如，转移温度可以低于分离温度。在这种情况下，转移温度为使得指状部分31的收缩幅度足以“抓”起微发光二极管290进行转移的最高温度，分离温度为使得指状部分31舒展从而与微发光二极管290分离的最低温度。第二温度低于第一温度，并且等于或低于转移温度。第三温度高于第二温度，并且等于或高于分离温度。\n\n[0031]根据示例性实施，抓取部30还可以包括主体部分32和固定部分33，主体部分32和固定部分33可以嵌入承载部件10。两个或更多个指状部分31从主体部分32的多个端部分别朝向承载部件10的外部延伸，固定部分33从主体部分32的中部朝向温度控制元件20延伸。主体部分32可以形成在温度控制元件20的一个表面上并嵌入承载部件10。固定部分33可以嵌入温度控制元件20。温度控制元件20嵌入(例如，完全嵌入)承载部件10，并且抓取部30嵌入(例如，部分嵌入)承载部件10，这样的设置可以增加抓取部30在转移过程中的稳定性。然而，本发明不限于此。例如，抓取部30可以不包括固定部分33或主体部分32。例如，抓取部30可以仅包括指状部分31。例如，抓取部30可以为由记忆合金形成的其他结构的能实现转移功能的元件。例如，转移头1可以不包括承载部件10，而抓取部30由温度控制元件20承载。\n\n[0032]可以通过溅射沉积、适当的晶化热处理来形成形状记忆合金薄膜。之后，根据所要转移的微发光二极管(例如其尺寸、形状等)，在特定的加工温度下将形状记忆合金薄膜加工成抓取部30，使得指状部分31的收缩幅度足以“抓”起微发光二极管(例如，收缩幅度可以完全包覆微发光二极管)进行转移。同时，指状部分31在等于或低于分离温度的情况下可以舒展，从而与微发光二极管完全分离。例如，指状部分的长度为微发光二极管的高度的1倍至1.5倍，舒展的指状部分之间的最大距离为微发光二极管的宽度的1.5倍至2倍。\n\n[0033]参照图3，根据另一示例性实施例的用于转移微发光二极管的转移头2可以包括承载部件11、多个温度控制元件20以及多个抓取部30。除了元件的尺寸和数量之外，转移头2的承载部件11、多个温度控制元件20以及多个抓取部30与转移头1的对应元件相同或基本相同，因此省略其重复描述。在转移头2中，因为包括分离的多个温度控制元件20，因此多个抓取部30可以被分别控制。\n\n[0034]图4至图16示出了根据本公开的示例性实施例的微发光二极管290的制造方法。图4至图12示出了在将微发光二极管290转移到接收基板600之前的步骤，图13至图15示出了将微发光二极管290转移到接收基板600的步骤，图16示出了在将微发光二极管290转移到接收基板600之后的步骤。\n\n[0035]参照图4，在母板100上形成半导体层200。可以利用金属有机化学气相沉积(MOCVD)的方法形成半导体层200，但本发明不限于此。可以利用物理气相沉积方法、其他的化学气相沉积的方法等各种适当的方法形成半导体层。之后在半导体层200上形成光致抗蚀剂图案PR，以对半导体层200图案化，从而定义微发光二极管图案。\n\n[0036]参照图5，对半导体层200进行刻蚀形成多个微发光二极管图案210，剥离光致抗蚀剂图案PR，并在所述多个微发光二极管图案210上形成绝缘层300。单个微发光二极管图案210可以对应于一个微发光二极管。绝缘层300可以为单层或多层。单层或多层中的每层可以为有机绝缘层或无机绝缘层。\n\n[0037]参照图6，在绝缘层300上形成光致抗蚀剂图案PR，以对绝缘层300图案化，从而为每个微发光二极管图案210均定义一个电极开孔215。\n\n[0038]参照图7，对绝缘层300进行刻蚀并剥离光致抗蚀剂图案PR。绝缘层300可以形成为多个绝缘图案220，每个绝缘图案220对应于一个微发光二极管图案210，从而便于后续的转移操作。另外，在每个绝缘图案220中形成一个电极开孔215。\n\n[0039]参照图8，在绝缘图案220上沉积金属膜层400。金属膜层400也形成在每个电极开孔215中，从而可以用作微发光二极管的绑定点。\n\n[0040]参照图9，在金属膜层400上形成光致抗蚀剂图案PR，以对金属膜层400图案化，从而为每个微发光二极管图案210均定义一个金属电极图案230。\n\n[0041]参照图10，对金属膜层400进行刻蚀并剥离光致抗蚀剂图案PR，以形成多个金属电极图案230。每个金属电极图案230均形成在对应的绝缘图案220上，并通过对应的电极开孔215连接到对应的微发光二极管图案210。现在，每个微发光二极管图案210和对应的绝缘图案220以及金属电极图案230可以构成一个微发光二极管290。\n\n[0042]参照图11，将多个微发光二极管290共同附接到转移基板500，从而多个微发光二极管290位于母板100与转移基板500之间。例如，绝缘图案220和金属电极图案230可以与转移基板500接触。\n\n[0043]参照图12，剥离母板100，从而形成了待转移的多个微发光二极管290。\n\n[0044]下面将参照图13至图15描述微发光二极管290的转移方法。虽然图13至图15描述的转移方法以转移微发光二极管290为示例，但是本发明不限于此，而是可以利用图13至图15描述的方法转移任何合适的微发光二极管。\n\n[0045]参照图13，在第一温度(例如，室温)下，转移头1的抓取部30处于舒展状态。将转移头1精细移动至需要转移的微发光二极管290的上方，转移头1(不包括抓取部30的指状部分31)与微发光二极管290的距离为1μm至3μm。指状部分31在微发光二极管290的侧部舒展，不与微发光二极管290接触，或仅与微发光二极管290轻微接触而几乎不产生压力。\n\n[0046]之后，驱动温度控制元件20使得抓取部30的温度从第一温度升为第二温度，第二温度等于或高于转移温度，其中，转移温度为使得指状部分31的收缩幅度足以“抓”起微发光二极管290进行转移的最低温度。在抓取部30升温至第二温度时，抓取部30将微发光二极管290至少部分地包覆，转移头1与微发光二极管290固定相接。\n\n[0047]参照图14，转移头1抓取微发光二极管290。转移头1抓取微发光二极管290的作用力足以克服微发光二极管290与转移基板500之间的作用力以及微发光二极管290的重力。随后，转移头1将微发光二极管290转移到接收基板600。另外，将微发光二极管290的底部与接收基板600进行绑定。根据示例性实施例，将微发光二极管290的金属电极图案230与接收基板600上的布线610进行绑定。\n\n[0048]参照图15，在进行上述绑定后，驱动温度控制元件20使得抓取部30的温度从第二温度降为第三温度(例如室温)，第三温度等于或低于分离温度，其中，分离温度为使得指状部分31舒展从而与微发光二极管290分离的最高温度。在抓取部30降温至第三温度时，抓取部30呈舒展状，从而转移头1与微发光二极管290可以分离。\n\n[0049]至此，完成了将发光二极管290转移到接收基板600的操作。\n\n[0050]本发明的转移头和转移方法利用包括形状记忆合金的抓取部，可以降低微发光二极管的转移难度，提高微发光二极管的转移效率。\n\n[0051]另外，图16示出了在将微发光二极管290转移到接收基板600之后的步骤。通过进一步对微发光二极管290进行封装以及对电极的图案化，可以得到最终的微发光二极管封装件1000。\n\n[0052]对于本领域的技术人员将清楚的是，在不脱离本发明的精神或范围的情况下，可以在本发明中做出各种修改和变化。因此，如果本发明的修改和变化落入权利要求及其等同物的范围内，那么本发明意图覆盖本发明的这些修改和变化。');
INSERT INTO `os_patent_instruction_text` VALUES (10618, 23672, '技术领域\n\n[0001]本发明涉及显示器件制造领域，尤其涉及一种柔性LED器件及其制备方法。\n\n背景技术\n\n[0002]LED(Lighting Emitting Diode)即为发光二极管，是一种能将电能转化为光能的半导体固体发光器件，LED与普通的二极管类似都是由一个PN结组成，其发光机理是利用固体半导体芯片作为发光材料，在半导体中通过P区的空穴和和N区的电子发生复合，释放出过剩的能量而引起光子发射，根据不同的半导体材料中禁带宽度不同，其空穴和电子所处的能量状态也不同，因此在其复合时释放出的能量则不同，从而产生不同波长的光。\n\n[0003]随着科学技术的发展，LED的性能在不断提高，LED被广泛的应用在各个领域，比如照明、装饰、背光源和景观照明等。LED的发展在各个应用领域发展迅猛，但是也随之而来会遇到一些挑战：其一、随着低碳经济时代的到来，发展更为节能的LED是势在必行的任务；其二、因LED为硬质、不能够弯曲的特点，不能够满足其在某些特定场合的使用需求，因此，发展柔性的LED是当下需解决的问题。\n\n[0004]目前要实现LED的柔性，OLED虽然可以很好的实现柔性，但是制程条件苛刻，难以生产尺寸相对较大，而传统的无机半导体LED，一个难以突破的问题就是在于半导体硅材料在弯曲时的脆性问题。\n\n发明内容\n\n[0005]本发明提供的一种柔性LED器件及其制备方法，能够克服硅材料的在弯曲时的脆性，能够突破硬质LED使用范围的局限性，制程相对简单且能够节能。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明提供一种柔性LED器件的制备方法，所述方法包括以下步骤：\n\n[0008]步骤S1、提供一P-型硅晶片为衬底，在所述衬底上旋涂一层光刻胶，通过曝光、显影制程，在所述衬底上获得一层图案化的P-型硅微米柱；\n\n[0009]步骤S2、在所述P-型硅微米柱之间的间隙填充软模高分子树脂，形成一层包括所述P-型硅微米柱与所述软模高分子树脂的复合膜层；\n\n[0010]步骤S3、在所述复合膜层上依次制备N-型掺杂金属氧化物膜层、第一金属电极层；\n\n[0011]步骤S4、剥离所述衬底，在所述复合膜层剥离掉所述衬底一侧的表面上制备第二金属电极层，然后将由所述复合膜层、所述第一金属电极层、所述第二金属电极层和所述N-型掺杂金属氧化物膜层组成的整体转移至柔性衬底上，形成柔性LED器件。\n\n[0012]根据本发明一优选实施例，所述步骤S1中，至少一部分所述P-型硅晶片用作所述衬底，另一部分图案化后形成均一的所述P-型硅微米柱，且所述P-型硅微米柱均匀的分布于所述衬底上。\n\n[0013]根据本发明一优选实施例，所述步骤S2之后，所述方法还包括以下步骤：刻蚀所述复合膜层，使所述P-型硅微米柱与所述软模高分子树脂共平面。\n\n[0014]根据本发明一优选实施例，所述步骤S3中，采用离子磁控溅射的方式在所述复合膜层表面沉积一层所述N-型掺杂金属氧化物膜层，使所述N-型掺杂金属氧化物膜层与所述P-型硅微米柱形成P-N结。\n\n[0015]本发明还提供一种采用上述制备方法制备的柔性LED器件，包括：\n\n[0016]柔性衬底基板，所述柔性衬底基板包括有显示区域；\n\n[0017]阳极层，对应所述显示区域制备于所述柔性衬底基板上；\n\n[0018]复合膜层，制备于所述阳极层上，所述复合膜层包括软模高分子树脂以及P-型硅微米柱，所述P-型硅微米柱的高度为5μm～100μm；\n\n[0019]N-型金属氧化物层，制备于所述复合膜层上；\n\n[0020]阴极层，制备于所述N-型金属氧化物层上；\n\n[0021]其中，所述P-型硅微米柱均匀的分布于所述复合膜层中，且贯穿于所述软模高分子树脂，与所述N-型金属氧化物层形成P-N结。\n\n[0022]根据本发明一优选实施例，所述P-型硅微米柱的直径为0.5μm～10μm。\n\n[0023]根据本发明一优选实施例，相邻两所述P-型硅微米柱之间的距离为2μm～20μm。\n\n[0024]根据本发明一优选实施例，所述P-型硅微米柱的形状为圆柱形、棱柱形、圆台形或者棱台形。\n\n[0025]根据本发明一优选实施例，所述软模高分子树脂的材料为聚甲基丙烯酸甲酯、聚二甲基硅氧烷、柔性环氧树脂以及柔性聚酰亚胺中的一者或一者以上。\n\n[0026]本发明的有益效果为：相较于现有的LED器件，本发明提供的柔性LED器件及其制备方法，通过将LED器件的P-型硅材料制作成均匀分布的P-型硅微米柱，然后在P-型硅微米柱之间的间隙填充软模高分子树脂，形成一层包括P-型硅微米柱与软模高分子树脂的复合膜层，再进行LED器件的制备。本发明克服了现有LED器件的硅材料在弯曲时由于脆性而导致影响LED器件的显示性能，由于本发明的复合膜层在保证半导体硅材料的相应功能下，具有柔性的特质，突破硬质LED使用范围的局限性，制备的柔性LED器件具有发光均匀性，不仅制程相对简单，可以大规模生产，且在实现柔性的同时也能够节能。\n\n附图说明\n\n[0027]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0028]图1为本发明提供的柔性LED器件的制备方法流程图；\n\n[0029]图2a～图2f为本发明提供的制备柔性LED器件的过程示意图；\n\n[0030]图3为本发明实施例提供的柔性LED器件结构示意图。\n\n具体实施方式\n\n[0031]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0032]参考图1，为本发明提供的柔性LED器件的制备方法流程图，所述方法包括以下步骤：\n\n[0033]步骤S1、提供一P-型硅晶片为衬底，在所述衬底上旋涂一层光刻胶，通过曝光、显影制程，在所述衬底上获得一层图案化的P-型硅微米柱；\n\n[0034]步骤S2、在所述P-型硅微米柱之间的间隙填充软模高分子树脂，形成一层包括所述P-型硅微米柱与所述软模高分子树脂的复合膜层；\n\n[0035]步骤S3、在所述复合膜层上依次制备N-型掺杂金属氧化物膜层、第一金属电极层；\n\n[0036]步骤S4、剥离所述衬底，在所述复合膜层剥离掉所述衬底一侧的表面上制备第二金属电极层，然后将由所述复合膜层、所述第一金属电极层、所述第二金属电极层和所述N-型掺杂金属氧化物膜层组成的整体转移至柔性衬底上，形成柔性LED器件。\n\n[0037]具体地，请参照图2a-图2f所示，为本发明提供的制备柔性LED器件的过程示意图，先提供一个方形的P-型硅晶片20，在所述P-型硅晶片20表面旋涂光刻胶，形成光刻胶层21，以至少一部分所述P-型硅晶片20用作衬底201，另一部分进行图案化，通过曝光、显影制程，在所述衬底201上形成均一的P-型硅微米柱202，且所述P-型硅微米柱202均匀的分布于所述衬底201上，且相邻两所述P-型硅微米柱202之间存在间隙。然后在所述P-型硅微米柱202之间的所述间隙处填充软模高分子树脂203，形成一层包括所述P-型硅微米柱202与所述软模高分子树脂203的复合膜层22；所述复合膜层22覆盖所述衬底201。再对所述复合膜层22进行刻蚀，将裸露出所述软模高分子树脂203的所述P-型硅微米柱202的尖端刻蚀掉，使所述P-型硅微米柱202与所述软模高分子树脂203共平面，形成平坦的所述复合膜层22的表面，其中可采用氧等离子体刻蚀的方法进行刻蚀。然后采用离子磁控溅射的方式在所述复合膜层22的表面沉积一层N-型掺杂金属氧化物膜层23，使所述N-型掺杂金属氧化物膜层23与所述P-型硅微米柱202形成P-N结。紧接着在所述N-型掺杂金属氧化物膜层23上制备一层第一金属电极层24，以所述第一金属电极层24作为所述LED器件的阴极层。之后将所述衬底201与所述复合膜层22机械剥离，优选的，以能露出所述软模高分子树脂203的位置进行剥离所述衬底201，保持所述复合膜层22的剥离面的平整性与完整性。在所述复合膜层22剥离掉所述衬底201一侧的表面上制备第二金属电极层25，以所述第二金属电极层25作为所述LED器件的阳极层。最后将由所述复合膜层22、所述第一金属电极层24、所述第二金属电极层25和所述N-型掺杂金属氧化物膜层23组成的整体转移至PET柔性衬底26上，形成柔性LED器件。\n\n[0038]其中，所述光刻胶优选为正性光刻胶，形成的所述光刻胶层的厚度在100nm～300nm之间，通过曝光、显影，可将所述P-型硅晶片20的图案化部分中的曝光部分的消除掉，也可以选择负性光刻胶。通过蚀刻工艺后获得高度有序、均匀的所述P-型硅微米柱202。剥离所述衬底201时也可以不露出所述软模高分子树脂203。\n\n[0039]所述软模高分子树脂203均匀的填充于两所述P-型硅微米柱202形成的所述间隙处，形成所述复合膜层22。所述软模高分子树脂203的材料可以选择聚甲基丙烯酸甲酯(PMMA)、聚二甲基硅氧烷(PDMS)、柔性环氧树脂、柔性聚亚酰胺等其中的一种或多种。\n\n[0040]所述N-型掺杂金属氧化物膜层23的厚度为200nm～500nm之间，所述N-型掺杂金属氧化物膜层23的材料可以选择为ZnO、Cu2O、SnO2、Fe2O3、TiO2、ZrO2、CoO、WO3、In2O3、Al2O3、Fe3O4等其中的一种或一种以上，不同的N-型金属氧化物和P-型半导体硅之间的禁带宽度不同，也对应发出不同长度波长的光。所述第一金属电极层24以及所述第二金属电极层25的材料可以为石墨烯、Ag、Al、Cu、Zn等导体金属中的任意一种或者多种金属复合膜。\n\n[0041]参照图3所示，本发明还提供一种采用上述制备方法制备的柔性LED器件，包括：柔性衬底基板30，所述柔性衬底基板30包括有显示区域；阳极层31，对应所述显示区域制备于所述柔性衬底基板30上；复合膜层32，制备于所述阳极层31上，所述复合膜层32包括软模高分子树脂320以及P-型硅微米柱321；N-型金属氧化物层33，制备于所述复合膜层32上；阴极层34，制备于所述N-型金属氧化物层33上。其中，所述P-型硅微米柱321均匀的分布于所述复合膜层32中，且贯穿于所述软模高分子树脂320，使所述P-型硅微米柱321两端分别与所述阳极层31以及所述N-型金属氧化物层33接触，且与所述N-型金属氧化物层33形成P-N结，从而导通所述阳极层31与所述阴极层34。\n\n[0042]所述P-型硅微米柱321的直径范围在0.5μm～10μm之间，优选为2μm～6μm；高度在5μm～100μm之间，优选高度为20μm～80μm。以及相邻两所述P-型硅微米柱321之间的距离为2μm～20μm之间，优选为5μm～12μm之间。所述P-型硅微米柱321的形状为圆柱形、棱柱形、圆台形或者棱台形等形状，此处不做限制。\n\n[0043]由于本发明将LED器件中的半导体硅材料制作成与高分子树脂结合的形式，在保证该半导体硅材料原有的作用下，通过增加柔性材料，改善该半导体硅材料的脆性问题，使该半导体硅材料在弯曲时不被破坏。本发明提供的实施例是将P-型硅材料制作成P-型硅微米柱的形式，可以理解的是，在不影响功能的情况下，本发明还可将P-型硅材料制作成其他工艺可接受的形状，使其与柔性材料有机的结合，从而改善硅材料在弯曲时的脆性问题。\n\n[0044]相较于现有的LED器件，本发明提供的柔性LED器件及其制备方法，首先以P-型硅晶片的一部分作为衬底，另一部分刻蚀形成一层P-型硅微米柱，然后在P-型硅微米柱之间的间隙填充软模高分子树脂，形成一层包括P-型硅微米柱与软模高分子树脂的复合膜层；再制备N-型掺杂金属氧化物膜层以形成P-N结，之后将P-型衬底机械剥离，完成电极的制备后再转移至PET衬底上形成柔性LED器件。本发明克服了LED器件的硅材料在弯曲时由于脆性而导致影响LED器件的显示性能，由于本发明的复合膜层在保证半导体硅材料的相应功能下，具有柔性的特质，突破硬质LED使用范围的局限性，制备的柔性LED器件具有发光均匀性，不仅制程相对简单，可以大规模生产，且在实现柔性的同时也能够节能。\n\n[0045]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及显示器件制造领域，尤其涉及一种柔性LED器件及其制备方法。\n\n背景技术\n\n[0002]LED(Lighting Emitting Diode)即为发光二极管，是一种能将电能转化为光能的半导体固体发光器件，LED与普通的二极管类似都是由一个PN结组成，其发光机理是利用固体半导体芯片作为发光材料，在半导体中通过P区的空穴和和N区的电子发生复合，释放出过剩的能量而引起光子发射，根据不同的半导体材料中禁带宽度不同，其空穴和电子所处的能量状态也不同，因此在其复合时释放出的能量则不同，从而产生不同波长的光。\n\n[0003]随着科学技术的发展，LED的性能在不断提高，LED被广泛的应用在各个领域，比如照明、装饰、背光源和景观照明等。LED的发展在各个应用领域发展迅猛，但是也随之而来会遇到一些挑战：其一、随着低碳经济时代的到来，发展更为节能的LED是势在必行的任务；其二、因LED为硬质、不能够弯曲的特点，不能够满足其在某些特定场合的使用需求，因此，发展柔性的LED是当下需解决的问题。\n\n[0004]目前要实现LED的柔性，OLED虽然可以很好的实现柔性，但是制程条件苛刻，难以生产尺寸相对较大，而传统的无机半导体LED，一个难以突破的问题就是在于半导体硅材料在弯曲时的脆性问题。\n\n发明内容\n\n[0005]本发明提供的一种柔性LED器件及其制备方法，能够克服硅材料的在弯曲时的脆性，能够突破硬质LED使用范围的局限性，制程相对简单且能够节能。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明提供一种柔性LED器件的制备方法，所述方法包括以下步骤：\n\n[0008]步骤S1、提供一P-型硅晶片为衬底，在所述衬底上旋涂一层光刻胶，通过曝光、显影制程，在所述衬底上获得一层图案化的P-型硅微米柱；\n\n[0009]步骤S2、在所述P-型硅微米柱之间的间隙填充软模高分子树脂，形成一层包括所述P-型硅微米柱与所述软模高分子树脂的复合膜层；\n\n[0010]步骤S3、在所述复合膜层上依次制备N-型掺杂金属氧化物膜层、第一金属电极层；\n\n[0011]步骤S4、剥离所述衬底，在所述复合膜层剥离掉所述衬底一侧的表面上制备第二金属电极层，然后将由所述复合膜层、所述第一金属电极层、所述第二金属电极层和所述N-型掺杂金属氧化物膜层组成的整体转移至柔性衬底上，形成柔性LED器件。\n\n[0012]根据本发明一优选实施例，所述步骤S1中，至少一部分所述P-型硅晶片用作所述衬底，另一部分图案化后形成均一的所述P-型硅微米柱，且所述P-型硅微米柱均匀的分布于所述衬底上。\n\n[0013]根据本发明一优选实施例，所述步骤S2之后，所述方法还包括以下步骤：刻蚀所述复合膜层，使所述P-型硅微米柱与所述软模高分子树脂共平面。\n\n[0014]根据本发明一优选实施例，所述步骤S3中，采用离子磁控溅射的方式在所述复合膜层表面沉积一层所述N-型掺杂金属氧化物膜层，使所述N-型掺杂金属氧化物膜层与所述P-型硅微米柱形成P-N结。\n\n[0015]本发明还提供一种采用上述制备方法制备的柔性LED器件，包括：\n\n[0016]柔性衬底基板，所述柔性衬底基板包括有显示区域；\n\n[0017]阳极层，对应所述显示区域制备于所述柔性衬底基板上；\n\n[0018]复合膜层，制备于所述阳极层上，所述复合膜层包括软模高分子树脂以及P-型硅微米柱，所述P-型硅微米柱的高度为5μm～100μm；\n\n[0019]N-型金属氧化物层，制备于所述复合膜层上；\n\n[0020]阴极层，制备于所述N-型金属氧化物层上；\n\n[0021]其中，所述P-型硅微米柱均匀的分布于所述复合膜层中，且贯穿于所述软模高分子树脂，与所述N-型金属氧化物层形成P-N结。\n\n[0022]根据本发明一优选实施例，所述P-型硅微米柱的直径为0.5μm～10μm。\n\n[0023]根据本发明一优选实施例，相邻两所述P-型硅微米柱之间的距离为2μm～20μm。\n\n[0024]根据本发明一优选实施例，所述P-型硅微米柱的形状为圆柱形、棱柱形、圆台形或者棱台形。\n\n[0025]根据本发明一优选实施例，所述软模高分子树脂的材料为聚甲基丙烯酸甲酯、聚二甲基硅氧烷、柔性环氧树脂以及柔性聚酰亚胺中的一者或一者以上。\n\n[0026]本发明的有益效果为：相较于现有的LED器件，本发明提供的柔性LED器件及其制备方法，通过将LED器件的P-型硅材料制作成均匀分布的P-型硅微米柱，然后在P-型硅微米柱之间的间隙填充软模高分子树脂，形成一层包括P-型硅微米柱与软模高分子树脂的复合膜层，再进行LED器件的制备。本发明克服了现有LED器件的硅材料在弯曲时由于脆性而导致影响LED器件的显示性能，由于本发明的复合膜层在保证半导体硅材料的相应功能下，具有柔性的特质，突破硬质LED使用范围的局限性，制备的柔性LED器件具有发光均匀性，不仅制程相对简单，可以大规模生产，且在实现柔性的同时也能够节能。\n\n附图说明\n\n[0027]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0028]图1为本发明提供的柔性LED器件的制备方法流程图；\n\n[0029]图2a～图2f为本发明提供的制备柔性LED器件的过程示意图；\n\n[0030]图3为本发明实施例提供的柔性LED器件结构示意图。\n\n具体实施方式\n\n[0031]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0032]参考图1，为本发明提供的柔性LED器件的制备方法流程图，所述方法包括以下步骤：\n\n[0033]步骤S1、提供一P-型硅晶片为衬底，在所述衬底上旋涂一层光刻胶，通过曝光、显影制程，在所述衬底上获得一层图案化的P-型硅微米柱；\n\n[0034]步骤S2、在所述P-型硅微米柱之间的间隙填充软模高分子树脂，形成一层包括所述P-型硅微米柱与所述软模高分子树脂的复合膜层；\n\n[0035]步骤S3、在所述复合膜层上依次制备N-型掺杂金属氧化物膜层、第一金属电极层；\n\n[0036]步骤S4、剥离所述衬底，在所述复合膜层剥离掉所述衬底一侧的表面上制备第二金属电极层，然后将由所述复合膜层、所述第一金属电极层、所述第二金属电极层和所述N-型掺杂金属氧化物膜层组成的整体转移至柔性衬底上，形成柔性LED器件。\n\n[0037]具体地，请参照图2a-图2f所示，为本发明提供的制备柔性LED器件的过程示意图，先提供一个方形的P-型硅晶片20，在所述P-型硅晶片20表面旋涂光刻胶，形成光刻胶层21，以至少一部分所述P-型硅晶片20用作衬底201，另一部分进行图案化，通过曝光、显影制程，在所述衬底201上形成均一的P-型硅微米柱202，且所述P-型硅微米柱202均匀的分布于所述衬底201上，且相邻两所述P-型硅微米柱202之间存在间隙。然后在所述P-型硅微米柱202之间的所述间隙处填充软模高分子树脂203，形成一层包括所述P-型硅微米柱202与所述软模高分子树脂203的复合膜层22；所述复合膜层22覆盖所述衬底201。再对所述复合膜层22进行刻蚀，将裸露出所述软模高分子树脂203的所述P-型硅微米柱202的尖端刻蚀掉，使所述P-型硅微米柱202与所述软模高分子树脂203共平面，形成平坦的所述复合膜层22的表面，其中可采用氧等离子体刻蚀的方法进行刻蚀。然后采用离子磁控溅射的方式在所述复合膜层22的表面沉积一层N-型掺杂金属氧化物膜层23，使所述N-型掺杂金属氧化物膜层23与所述P-型硅微米柱202形成P-N结。紧接着在所述N-型掺杂金属氧化物膜层23上制备一层第一金属电极层24，以所述第一金属电极层24作为所述LED器件的阴极层。之后将所述衬底201与所述复合膜层22机械剥离，优选的，以能露出所述软模高分子树脂203的位置进行剥离所述衬底201，保持所述复合膜层22的剥离面的平整性与完整性。在所述复合膜层22剥离掉所述衬底201一侧的表面上制备第二金属电极层25，以所述第二金属电极层25作为所述LED器件的阳极层。最后将由所述复合膜层22、所述第一金属电极层24、所述第二金属电极层25和所述N-型掺杂金属氧化物膜层23组成的整体转移至PET柔性衬底26上，形成柔性LED器件。\n\n[0038]其中，所述光刻胶优选为正性光刻胶，形成的所述光刻胶层的厚度在100nm～300nm之间，通过曝光、显影，可将所述P-型硅晶片20的图案化部分中的曝光部分的消除掉，也可以选择负性光刻胶。通过蚀刻工艺后获得高度有序、均匀的所述P-型硅微米柱202。剥离所述衬底201时也可以不露出所述软模高分子树脂203。\n\n[0039]所述软模高分子树脂203均匀的填充于两所述P-型硅微米柱202形成的所述间隙处，形成所述复合膜层22。所述软模高分子树脂203的材料可以选择聚甲基丙烯酸甲酯(PMMA)、聚二甲基硅氧烷(PDMS)、柔性环氧树脂、柔性聚亚酰胺等其中的一种或多种。\n\n[0040]所述N-型掺杂金属氧化物膜层23的厚度为200nm～500nm之间，所述N-型掺杂金属氧化物膜层23的材料可以选择为ZnO、Cu2O、SnO2、Fe2O3、TiO2、ZrO2、CoO、WO3、In2O3、Al2O3、Fe3O4等其中的一种或一种以上，不同的N-型金属氧化物和P-型半导体硅之间的禁带宽度不同，也对应发出不同长度波长的光。所述第一金属电极层24以及所述第二金属电极层25的材料可以为石墨烯、Ag、Al、Cu、Zn等导体金属中的任意一种或者多种金属复合膜。\n\n[0041]参照图3所示，本发明还提供一种采用上述制备方法制备的柔性LED器件，包括：柔性衬底基板30，所述柔性衬底基板30包括有显示区域；阳极层31，对应所述显示区域制备于所述柔性衬底基板30上；复合膜层32，制备于所述阳极层31上，所述复合膜层32包括软模高分子树脂320以及P-型硅微米柱321；N-型金属氧化物层33，制备于所述复合膜层32上；阴极层34，制备于所述N-型金属氧化物层33上。其中，所述P-型硅微米柱321均匀的分布于所述复合膜层32中，且贯穿于所述软模高分子树脂320，使所述P-型硅微米柱321两端分别与所述阳极层31以及所述N-型金属氧化物层33接触，且与所述N-型金属氧化物层33形成P-N结，从而导通所述阳极层31与所述阴极层34。\n\n[0042]所述P-型硅微米柱321的直径范围在0.5μm～10μm之间，优选为2μm～6μm；高度在5μm～100μm之间，优选高度为20μm～80μm。以及相邻两所述P-型硅微米柱321之间的距离为2μm～20μm之间，优选为5μm～12μm之间。所述P-型硅微米柱321的形状为圆柱形、棱柱形、圆台形或者棱台形等形状，此处不做限制。\n\n[0043]由于本发明将LED器件中的半导体硅材料制作成与高分子树脂结合的形式，在保证该半导体硅材料原有的作用下，通过增加柔性材料，改善该半导体硅材料的脆性问题，使该半导体硅材料在弯曲时不被破坏。本发明提供的实施例是将P-型硅材料制作成P-型硅微米柱的形式，可以理解的是，在不影响功能的情况下，本发明还可将P-型硅材料制作成其他工艺可接受的形状，使其与柔性材料有机的结合，从而改善硅材料在弯曲时的脆性问题。\n\n[0044]相较于现有的LED器件，本发明提供的柔性LED器件及其制备方法，首先以P-型硅晶片的一部分作为衬底，另一部分刻蚀形成一层P-型硅微米柱，然后在P-型硅微米柱之间的间隙填充软模高分子树脂，形成一层包括P-型硅微米柱与软模高分子树脂的复合膜层；再制备N-型掺杂金属氧化物膜层以形成P-N结，之后将P-型衬底机械剥离，完成电极的制备后再转移至PET衬底上形成柔性LED器件。本发明克服了LED器件的硅材料在弯曲时由于脆性而导致影响LED器件的显示性能，由于本发明的复合膜层在保证半导体硅材料的相应功能下，具有柔性的特质，突破硬质LED使用范围的局限性，制备的柔性LED器件具有发光均匀性，不仅制程相对简单，可以大规模生产，且在实现柔性的同时也能够节能。\n\n[0045]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10619, 23673, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种背光模组及液晶显示装置。\n\n背景技术\n\n[0002]随着显示技术的发展，液晶显示器(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]现有市场上的液晶显示器大部分为背光型液晶显示器，其包括壳体、设于壳体内的液晶显示面板及设于壳体内的背光模组。液晶显示面板是液晶显示器的主要组件，但液晶显示面板本身不发光，需要借由背光模组提供的光源来正常显示影像。通常液晶显示面板由两片玻璃基板贴合而成，且在两片玻璃基板之间灌入液晶，分别在两片玻璃基板的相对内侧设置像素电极和公共电极，通过向像素电极和公共电极施加电压来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。\n\n[0004]传统的背光模组通常采用阴极萤光灯管(Cold Cathode Fluorescent Lamp，CCFL)或发光二极管(Light Emitting Diode，LED)作为背光源，其中，由于LED更节能，体积更小，因此目前主流的液晶显示器均选用LED为背光源，但该背光模组中通常包括几十颗的LED，显示效果和调光精细度较差。而迷你发光二极管(Mini-LED)是一种尺寸在100微米左右的小型LED，将Mini-LED应用到背光模组中，能够在一个背光模组中设置数千颗Mini-LED，能够有效提升液晶显示装置的迷你发光二极管背光特性。如图1所示，现有的采用Mini-LED的背光模组包括：基板、位于所述基板上的阵列排布的多个包含Mini-LED的背光区10，对应每一行背光区10设有一条正极走线20，对应每一列背光区10设有一条负极走线30，每一条正极走线20连接其对应的一行背光区10的正极，每一条负极走线30连接其对应的一列背光区10的负极，在所述背光区10的下方设有背光金手指40，所述背光金手指40上设有多个正极导电触片401和多个负极导电402，每一条正极走线20连接一个正极导电触片401，每一条负极走线30连接一个负极导电触片402，其中正极走线20、负极走线30及背光金手指40均位于基板的正面，正极走线20和负极走线30在走线过程中需要占用大量的布线空间，导致背光模组的边框过大，不利于实现窄边框显示。\n\n发明内容\n\n[0005]本发明的目的在于提供一种背光模组，能够优化背光模组的布线设计，减小背光边框大小，实现窄边框设计。\n\n[0006]本发明的目的还在于提供一种液晶显示装置，能够优化背光模组的布线设计，减小背光边框大小，实现窄边框设计。\n\n[0007]为实现上述目的，本发明提供了一种背光模组，包括：基板、背光源、背光金手指、第一连接线、第二连接线及第三连接线；\n\n[0008]所述基板设有阵列排布的多个背光区，每一个背光区的正面均设有至少一个背光源，同一个背光区内的背光源电性连接并引出一个第一电极及一个第二电极；\n\n[0009]所述背光金手指设于所述基板的背面且位于所述基板的底部，所述背光金手指包括：沿背光区的行方向间隔排列的多个第一导电触片及多个第二导电触片；\n\n[0010]每一列背光区的背面均设有一条第一连接线，每一条第一连接线对应电性连接一个第一导电触片，在每一个背光区内均设有第一过孔，同一列背光区的第一电极均通过第一过孔与该列背光区对应的第一连接线电性连接；\n\n[0011]每一行背光区的正面均设有一条第二连接线，同一行背光区的第二电极均与该行背光区对应的第二连接线电性连接，在每一行背光区中均有一个背光区中设有第二过孔；\n\n[0012]在所述基板的背面设有多条第三连接线，每一条第三连接线的第一端均对应电性连接一个第二导电触片，每一条第三连接线的第二端均经由一第二过孔电性连接至与该第二过孔所在行背光区对应的第二连接线。\n\n[0013]可选地，每一个第一导电触片和与该第一导电触片电性连接的第一连接线在同一列背光区中。\n\n[0014]可选地，所述第三连接线沿所述背光区的列方向延伸，且每一个第二导电触片和与该第二导电触片电性连接的第三连接线在同一列背光区中。\n\n[0015]可选地，所述第三连接线从与该第二连接线对应连接的第二导电触片开始延伸至该第三连接线对应的第二过孔截止。\n\n[0016]可选地，所述第三连接线从与该第二连接线对应连接的第二导电触片开始延伸至该所述第三连接线对应的第二过孔后，继续延伸至所述基板的顶部。\n\n[0017]可选地，所述第一连接线从与该第一连接线对应连接的第一导电触片开始延伸至所述基板的顶部。\n\n[0018]可选地，所述背光源为Mini-LED。\n\n[0019]可选地，所述第一电极和第二电极中的一个为所述Mini-LED的正极，另一个为所述Mini-LED的负极。\n\n[0020]本发明还提供一种液晶显示装置，包括上述的背光模组。\n\n[0021]本发明的有益效果：本发明提供一种背光模组，包括：基板、背光源、背光金手指、第一连接线、第二连接线及第三连接线，其中背光源位于所述基板的正面，背光金手指位于所述基板的背面，每一列的背光源的第一电极均通过对应的第一过孔与基板背面的第一连接线电性连接，每一条第一连接线连接一个第一导电触片，每一行背光源的第二电极均通过一第二连接线连接到一起，每一条第二连接线均通过一第二过孔与基板的背面的一第三连接线电性连接，每一条第三连接线均电性连接一第二导电触片，通过将背光金手指和连接线设置到基板的背面，能够优化背光模组的布线设计，减小背光边框大小，实现窄边框设计。本发明还提供一种液晶显示装置，能够优化背光模组的布线设计，减小背光边框大小，实现窄边框设计。\n\n附图说明\n\n[0022]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0023]附图中，\n\n[0024]图1为现有的背光模组的结构图；\n\n[0025]图2为本发明的背光模组的正面结构图；\n\n[0026]图3为本发明的背光模组的第一实施例的背面结构图；\n\n[0027]图4为本发明的背光模组的第二实施例的背面结构图。\n\n具体实施方式\n\n[0028]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0029]请参阅图2至图4，本发明提供一种背光模组，包括：基板1、背光源2、背光金手指3、第一连接线41、第二连接线42及第三连接线43。\n\n[0030]具体地，如图2所示，所述基板1设有阵列排布的多个背光区11，每一个背光区11的正面均设有至少一个背光源2，同一个背光区11内的背光源2电性连接并引出一个第一电极及一个第二电极，优选地，所述背光源2为Mini-LED，所述第一电极为所述Mini-LED的正极，所述第二电极为所述Mini-LED的负极，当然这并非对本发明的限制，所述第一电极也可以为所述Mini-LED的负极，所述第二电极也可以为所述Mini-LED的正极。\n\n[0031]进一步地，如图3或图4所示，所述背光金手指3设于所述基板1的背面且位于所述基板1的底部，所述背光金手指3包括：沿背光区11的行方向间隔排列的多个第一导电触片31及多个第二导电触片32。\n\n[0032]其中，每一列背光区11的背面均设有一条第一连接线41，每一条第一连接线41对应电性连接一个第一导电触片31，在每一个背光区11内均设有第一过孔51，同一列背光区11的第一电极均通过第一过孔51与该列背光区11对应的第一连接线41电性连接。\n\n[0033]其中，每一行背光区11的正面均设有多条第二连接线42，同一行背光区11的第二电极均与该行背光区11对应的第二连接线42电性连接，在每一行背光区11中均有一个背光区11中设有第二过孔52。\n\n[0034]进一步地，在所述基板1的背面还设有多条第三连接线43，每一条第三连接线43的第一端均对应电性连接一个第二导电触片32，每一条第三连接线43的第二端均经由一第二过孔52电性连接至与该第二过孔52所在行背光区11对应的第二连接线42。\n\n[0035]具体地，每一个第一导电触片31和与该第一导电触片31电性连接的第一连接线41在同一列背光区11中，每一个第二导电触片32和与该第二导电触片32电性连接的第三连接线43在同一列背光区11中。\n\n[0036]举例来说，如图3或图4所示，在本发明的第一实施例和第二实施例中，所述基板1上设有9行15列背光区11，在第一至第十五列背光区11的底部分别设有一个第一导电触片31，同时在第一列背光区11、第二列背光区11及第三列背光区11的底部均设有三个第二导电触片32，其中第一列背光区11的第一电极均通过第一连接线41与第一列背光区11底部的第一导电触片31电性连接，第二列背光区11的第一电极均通过第一连接线41与第二列背光区11底部的第一导电触片31电性连接且依次类推直至第十五列背光区11，而第一至第三行背光区11分别在其位于第一列的一个背光区11中形成有第二过孔52，从而第一至第三行背光区11的第二连接线42分别通过其位于第一列背光区11的第二过孔52与第一至第三行背光区11的第三连接线43电性连接，所述第一至第三行背光区11的第三连接线43又分别与第一列背光区11底部的三个第二导电触片32电性连接，第四至第六行背光区11分别在其位于第二列的一个背光区11中形成有第二过孔52，从而第四至第六行背光区11的第二连接线42分别通过其位于第二列背光区11的第二过孔52与第四至第六行背光区11的第三连接线43电性连接，所述第四至第六行背光区11的第三连接线43又分别与第二列背光区11底部的三个第二导电触片32电性连接，第七至第九行背光区11分别在其位于第三列的一个背光区11中形成有第二过孔52，从而第七至第九行背光区11的第二连接线42分别通过其位于第三列背光区11的第二过孔52与第七至第九行背光区11的第三连接线43电性连接，所述第七至第九行背光区11的第三连接线43又分别与第三列背光区11下方的三个第二导电触片32电性连接。\n\n[0037]需要说明的是，在本发明的第一实施例和第二实施例中，所述第一连接线41均从与该第一连接线41对应连接的第一导电触片31开始延伸至所述基板1的顶部，而在本发明的第一实施例中，所述第三连接线43从与该第三连接线43对应连接的第二导电触片32开始延伸至该第三连接线43对应的第二过孔52截止，此时由于第一连接线41和第三连接线43的长度不一致，没有第三连接线43影响的一些背光区11中的亮度与其他背光区不同，且背光模组的厚度不均匀，平整度不佳，为了解决该问题，在本发明的第二实施例中，所述第三连接线43从该第三连接线43对应第二导电触片32开始延伸至该第三连接线43对应的第二过孔52后，继续延伸至所述基板1的顶部，从而使得背光模组的厚度均匀，提升背光模组的平整性，改善背光模组的亮度均匀性。\n\n[0038]本发明还提供一种液晶显示装置，包括上述的背光模组，能够优化背光模组的布线设计，减小背光边框大小，实现窄边框设计。\n\n[0039]综上所述，本发明提供一种背光模组，包括：基板、背光源、背光金手指、第一连接线、第二连接线及第三连接线，其中背光源位于所述基板的正面，背光金手指位于所述基板的背面，每一列的背光源的第一电极均通过对应的第一过孔与基板背面的第一连接线电性连接，每一条第一连接线连接一个第一导电触片，每一行背光源的第二电极均通过一第二连接线连接到一起，每一条第二连接线均通过一第二过孔与基板的背面的一第三连接线电性连接，每一条第三连接线均电性连接一第二导电触片，通过将背光金手指和连接线设置到基板的背面，能够优化背光模组的布线设计，减小背光边框大小，实现窄边框设计。本发明还提供一种液晶显示装置，能够优化背光模组的布线设计，减小背光边框大小，实现窄边框设计。\n\n[0040]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种背光模组及液晶显示装置。\n\n背景技术\n\n[0002]随着显示技术的发展，液晶显示器(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]现有市场上的液晶显示器大部分为背光型液晶显示器，其包括壳体、设于壳体内的液晶显示面板及设于壳体内的背光模组。液晶显示面板是液晶显示器的主要组件，但液晶显示面板本身不发光，需要借由背光模组提供的光源来正常显示影像。通常液晶显示面板由两片玻璃基板贴合而成，且在两片玻璃基板之间灌入液晶，分别在两片玻璃基板的相对内侧设置像素电极和公共电极，通过向像素电极和公共电极施加电压来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。\n\n[0004]传统的背光模组通常采用阴极萤光灯管(Cold Cathode Fluorescent Lamp，CCFL)或发光二极管(Light Emitting Diode，LED)作为背光源，其中，由于LED更节能，体积更小，因此目前主流的液晶显示器均选用LED为背光源，但该背光模组中通常包括几十颗的LED，显示效果和调光精细度较差。而迷你发光二极管(Mini-LED)是一种尺寸在100微米左右的小型LED，将Mini-LED应用到背光模组中，能够在一个背光模组中设置数千颗Mini-LED，能够有效提升液晶显示装置的迷你发光二极管背光特性。如图1所示，现有的采用Mini-LED的背光模组包括：基板、位于所述基板上的阵列排布的多个包含Mini-LED的背光区10，对应每一行背光区10设有一条正极走线20，对应每一列背光区10设有一条负极走线30，每一条正极走线20连接其对应的一行背光区10的正极，每一条负极走线30连接其对应的一列背光区10的负极，在所述背光区10的下方设有背光金手指40，所述背光金手指40上设有多个正极导电触片401和多个负极导电402，每一条正极走线20连接一个正极导电触片401，每一条负极走线30连接一个负极导电触片402，其中正极走线20、负极走线30及背光金手指40均位于基板的正面，正极走线20和负极走线30在走线过程中需要占用大量的布线空间，导致背光模组的边框过大，不利于实现窄边框显示。\n\n发明内容\n\n[0005]本发明的目的在于提供一种背光模组，能够优化背光模组的布线设计，减小背光边框大小，实现窄边框设计。\n\n[0006]本发明的目的还在于提供一种液晶显示装置，能够优化背光模组的布线设计，减小背光边框大小，实现窄边框设计。\n\n[0007]为实现上述目的，本发明提供了一种背光模组，包括：基板、背光源、背光金手指、第一连接线、第二连接线及第三连接线；\n\n[0008]所述基板设有阵列排布的多个背光区，每一个背光区的正面均设有至少一个背光源，同一个背光区内的背光源电性连接并引出一个第一电极及一个第二电极；\n\n[0009]所述背光金手指设于所述基板的背面且位于所述基板的底部，所述背光金手指包括：沿背光区的行方向间隔排列的多个第一导电触片及多个第二导电触片；\n\n[0010]每一列背光区的背面均设有一条第一连接线，每一条第一连接线对应电性连接一个第一导电触片，在每一个背光区内均设有第一过孔，同一列背光区的第一电极均通过第一过孔与该列背光区对应的第一连接线电性连接；\n\n[0011]每一行背光区的正面均设有一条第二连接线，同一行背光区的第二电极均与该行背光区对应的第二连接线电性连接，在每一行背光区中均有一个背光区中设有第二过孔；\n\n[0012]在所述基板的背面设有多条第三连接线，每一条第三连接线的第一端均对应电性连接一个第二导电触片，每一条第三连接线的第二端均经由一第二过孔电性连接至与该第二过孔所在行背光区对应的第二连接线。\n\n[0013]可选地，每一个第一导电触片和与该第一导电触片电性连接的第一连接线在同一列背光区中。\n\n[0014]可选地，所述第三连接线沿所述背光区的列方向延伸，且每一个第二导电触片和与该第二导电触片电性连接的第三连接线在同一列背光区中。\n\n[0015]可选地，所述第三连接线从与该第二连接线对应连接的第二导电触片开始延伸至该第三连接线对应的第二过孔截止。\n\n[0016]可选地，所述第三连接线从与该第二连接线对应连接的第二导电触片开始延伸至该所述第三连接线对应的第二过孔后，继续延伸至所述基板的顶部。\n\n[0017]可选地，所述第一连接线从与该第一连接线对应连接的第一导电触片开始延伸至所述基板的顶部。\n\n[0018]可选地，所述背光源为Mini-LED。\n\n[0019]可选地，所述第一电极和第二电极中的一个为所述Mini-LED的正极，另一个为所述Mini-LED的负极。\n\n[0020]本发明还提供一种液晶显示装置，包括上述的背光模组。\n\n[0021]本发明的有益效果：本发明提供一种背光模组，包括：基板、背光源、背光金手指、第一连接线、第二连接线及第三连接线，其中背光源位于所述基板的正面，背光金手指位于所述基板的背面，每一列的背光源的第一电极均通过对应的第一过孔与基板背面的第一连接线电性连接，每一条第一连接线连接一个第一导电触片，每一行背光源的第二电极均通过一第二连接线连接到一起，每一条第二连接线均通过一第二过孔与基板的背面的一第三连接线电性连接，每一条第三连接线均电性连接一第二导电触片，通过将背光金手指和连接线设置到基板的背面，能够优化背光模组的布线设计，减小背光边框大小，实现窄边框设计。本发明还提供一种液晶显示装置，能够优化背光模组的布线设计，减小背光边框大小，实现窄边框设计。\n\n附图说明\n\n[0022]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0023]附图中，\n\n[0024]图1为现有的背光模组的结构图；\n\n[0025]图2为本发明的背光模组的正面结构图；\n\n[0026]图3为本发明的背光模组的第一实施例的背面结构图；\n\n[0027]图4为本发明的背光模组的第二实施例的背面结构图。\n\n具体实施方式\n\n[0028]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0029]请参阅图2至图4，本发明提供一种背光模组，包括：基板1、背光源2、背光金手指3、第一连接线41、第二连接线42及第三连接线43。\n\n[0030]具体地，如图2所示，所述基板1设有阵列排布的多个背光区11，每一个背光区11的正面均设有至少一个背光源2，同一个背光区11内的背光源2电性连接并引出一个第一电极及一个第二电极，优选地，所述背光源2为Mini-LED，所述第一电极为所述Mini-LED的正极，所述第二电极为所述Mini-LED的负极，当然这并非对本发明的限制，所述第一电极也可以为所述Mini-LED的负极，所述第二电极也可以为所述Mini-LED的正极。\n\n[0031]进一步地，如图3或图4所示，所述背光金手指3设于所述基板1的背面且位于所述基板1的底部，所述背光金手指3包括：沿背光区11的行方向间隔排列的多个第一导电触片31及多个第二导电触片32。\n\n[0032]其中，每一列背光区11的背面均设有一条第一连接线41，每一条第一连接线41对应电性连接一个第一导电触片31，在每一个背光区11内均设有第一过孔51，同一列背光区11的第一电极均通过第一过孔51与该列背光区11对应的第一连接线41电性连接。\n\n[0033]其中，每一行背光区11的正面均设有多条第二连接线42，同一行背光区11的第二电极均与该行背光区11对应的第二连接线42电性连接，在每一行背光区11中均有一个背光区11中设有第二过孔52。\n\n[0034]进一步地，在所述基板1的背面还设有多条第三连接线43，每一条第三连接线43的第一端均对应电性连接一个第二导电触片32，每一条第三连接线43的第二端均经由一第二过孔52电性连接至与该第二过孔52所在行背光区11对应的第二连接线42。\n\n[0035]具体地，每一个第一导电触片31和与该第一导电触片31电性连接的第一连接线41在同一列背光区11中，每一个第二导电触片32和与该第二导电触片32电性连接的第三连接线43在同一列背光区11中。\n\n[0036]举例来说，如图3或图4所示，在本发明的第一实施例和第二实施例中，所述基板1上设有9行15列背光区11，在第一至第十五列背光区11的底部分别设有一个第一导电触片31，同时在第一列背光区11、第二列背光区11及第三列背光区11的底部均设有三个第二导电触片32，其中第一列背光区11的第一电极均通过第一连接线41与第一列背光区11底部的第一导电触片31电性连接，第二列背光区11的第一电极均通过第一连接线41与第二列背光区11底部的第一导电触片31电性连接且依次类推直至第十五列背光区11，而第一至第三行背光区11分别在其位于第一列的一个背光区11中形成有第二过孔52，从而第一至第三行背光区11的第二连接线42分别通过其位于第一列背光区11的第二过孔52与第一至第三行背光区11的第三连接线43电性连接，所述第一至第三行背光区11的第三连接线43又分别与第一列背光区11底部的三个第二导电触片32电性连接，第四至第六行背光区11分别在其位于第二列的一个背光区11中形成有第二过孔52，从而第四至第六行背光区11的第二连接线42分别通过其位于第二列背光区11的第二过孔52与第四至第六行背光区11的第三连接线43电性连接，所述第四至第六行背光区11的第三连接线43又分别与第二列背光区11底部的三个第二导电触片32电性连接，第七至第九行背光区11分别在其位于第三列的一个背光区11中形成有第二过孔52，从而第七至第九行背光区11的第二连接线42分别通过其位于第三列背光区11的第二过孔52与第七至第九行背光区11的第三连接线43电性连接，所述第七至第九行背光区11的第三连接线43又分别与第三列背光区11下方的三个第二导电触片32电性连接。\n\n[0037]需要说明的是，在本发明的第一实施例和第二实施例中，所述第一连接线41均从与该第一连接线41对应连接的第一导电触片31开始延伸至所述基板1的顶部，而在本发明的第一实施例中，所述第三连接线43从与该第三连接线43对应连接的第二导电触片32开始延伸至该第三连接线43对应的第二过孔52截止，此时由于第一连接线41和第三连接线43的长度不一致，没有第三连接线43影响的一些背光区11中的亮度与其他背光区不同，且背光模组的厚度不均匀，平整度不佳，为了解决该问题，在本发明的第二实施例中，所述第三连接线43从该第三连接线43对应第二导电触片32开始延伸至该第三连接线43对应的第二过孔52后，继续延伸至所述基板1的顶部，从而使得背光模组的厚度均匀，提升背光模组的平整性，改善背光模组的亮度均匀性。\n\n[0038]本发明还提供一种液晶显示装置，包括上述的背光模组，能够优化背光模组的布线设计，减小背光边框大小，实现窄边框设计。\n\n[0039]综上所述，本发明提供一种背光模组，包括：基板、背光源、背光金手指、第一连接线、第二连接线及第三连接线，其中背光源位于所述基板的正面，背光金手指位于所述基板的背面，每一列的背光源的第一电极均通过对应的第一过孔与基板背面的第一连接线电性连接，每一条第一连接线连接一个第一导电触片，每一行背光源的第二电极均通过一第二连接线连接到一起，每一条第二连接线均通过一第二过孔与基板的背面的一第三连接线电性连接，每一条第三连接线均电性连接一第二导电触片，通过将背光金手指和连接线设置到基板的背面，能够优化背光模组的布线设计，减小背光边框大小，实现窄边框设计。本发明还提供一种液晶显示装置，能够优化背光模组的布线设计，减小背光边框大小，实现窄边框设计。\n\n[0040]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10620, 23674, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种网版、面光源的制作方法及直下式背光模组的制作方法。\n\n背景技术\n\n[0002]随着显示技术的发展，液晶显示装置(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。现有市场上的液晶显示装置大部分为背光型液晶显示装置，其包括液晶显示面板及背光模组(Backlight Module)。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，两片玻璃基板中间有许多垂直和水平的细小电线，通过通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。由于液晶显示面板本身不发光，需要借由背光模组提供的光源来正常显示影像，因此，背光模组成为液晶显示装置的关键组件之一。背光模组依照光源入射位置的不同分成侧入式背光模组与直下式背光模组两种。\n\n[0003]面光源属于直下式背光的一种，面光源在制备过程中需要先利用网版在LED基板上刷一层锡膏，并让锡膏均匀摊开在LED基板的焊盘上，锡膏涂布的均匀性对后续LED芯片阵列排布均匀性有着至关重要的作用，然而现有的网版结构在锡膏涂布中很难保证锡膏涂布的均匀性，孔径大小的公差、锡膏刮涂的方向均会导致锡膏在焊盘上的均匀性受到影响，从而使LED芯片在LED基板上的排列规整性变差，出光光形发生改变，同时LED芯片与锡膏的接触面积不均匀也导致LED芯片出光亮度不均匀，综上两点导致面光源中整面亮度的不均。\n\n发明内容\n\n[0004]本发明的目的在于提供一种网版，能够保证锡膏涂布的均匀性，采用该网版用于制作面光源，能够保证面光源的亮度均一性。\n\n[0005]本发明的目的还在于提供一种面光源的制作方法，能够保证MINI LED芯片排布的均匀性和出光均匀性，有效提升面光源整面的亮度均一性。\n\n[0006]本发明的目的还在于提供一种直下式背光模组的制作方法，所述直下式背光模组包括面光源，能够保证MINI LED芯片排布的均匀性和出光均匀性，有效提升面光源整面的亮度均一性。\n\n[0007]为实现上述目的，本发明提供了一种网版，用于与刮刀配合印刷锡膏，设置间隔排列的数个开口及分别连通沿所述刮刀的刮涂方向排列的相邻开口的数个连通孔。\n\n[0008]所述开口贯穿所述网版的上表面与下表面，所述连通孔位于所述网版上表面与下表面之间。\n\n[0009]所述连通孔的横截面形状为圆形、椭圆形、方形或梯形。\n\n[0010]所述数个连通孔沿所述刮刀的刮涂方向设置。\n\n[0011]所述网版由钢制成，用于印刷锡膏于面光源的MINI LED基板上，所述开口呈阵列排布。\n\n[0012]本发明还提供了一种面光源的制作方法，包括以下步骤：\n\n[0013]步骤S1、提供MINI LED基板，所述MINI LED基板包括间隔排列的数个焊盘；\n\n[0014]步骤S2、提供网版与刮刀，所述网版设置分别对应所述数个焊盘的间隔排列的数个开口及分别连通沿所述刮刀的刮涂方向排列的相邻开口的数个连通孔；\n\n[0015]步骤S3、放置所述网版于所述MINI LED基板上，使所述数个开口与所述数个焊盘一一对齐；\n\n[0016]步骤S4、提供锡膏，利用所述刮刀刮涂所述锡膏于所述网版上，以在所述MINI LED基板的焊盘上印刷上所述锡膏；\n\n[0017]步骤S5、提供数个MINI LED芯片，将所述数个MINI LED芯片分别安装于所述数个焊盘上。\n\n[0018]所述开口贯穿所述网版的上表面与下表面，所述连通孔位于所述网版上表面与下表面之间。\n\n[0019]所述连通孔的横截面形状为圆形、椭圆形、方形或梯形。\n\n[0020]所述网版由钢制成，所述开口呈阵列排布，所述数个连通孔沿所述刮刀的刮涂方向设置。\n\n[0021]本发明还提供了一种直下式背光模组的制作方法，所述直下式背光模组包括面光源，采用如上所述的面光源的制作方法来制作面光源。\n\n[0022]本发明的有益效果：本发明提供的一种网版，包括间隔排列的数个开口及分别连通沿刮刀的刮涂方向排列的相邻开口的数个连通孔，在涂布锡膏时所述连通孔能平衡与该连通孔相邻的两个开口之间的锡膏高度，保证锡膏涂布的均匀性。本发明提供的一种面光源的制作方法，使用上述网版，通过在所述网版上沿刮刀的刮涂方向排列的相邻的两个开口之间设置连通孔，所述连通孔的走向为与刮刀的刮涂方向相同，从而利用类似连通器的原理使MINI LED基板的焊盘上的锡膏量达到均衡，保证后续锡膏和MINI LED芯片的接触面平整均一，从而保证后续MINI LED芯片排布的均匀性和出光均匀性，提升面光源整面的亮度均一性。本发明提供的一种直下式背光模组的制作方法，所述直下式背光模组包括面光源，采用如上所述的面光源的制作方法来制作面光源，能够保证MINI LED芯片排布的均匀性和出光均匀性，有效提升面光源整面的亮度均一性。\n\n附图说明\n\n[0023]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0024]附图中，\n\n[0025]图1为本发明的网版的示意图；\n\n[0026]图2为图1的网版沿A-A’线的截面示意图；\n\n[0027]图3为本发明的面光源的制作方法的流程图；\n\n[0028]图4为本发明的面光源的制作方法的步骤S1的示意图；\n\n[0029]图5为本发明的面光源的制作方法的步骤S2至步骤S4的示意图；\n\n[0030]图6为本发明的面光源的制作方法的步骤S5的示意图。\n\n具体实施方式\n\n[0031]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0032]请参阅图1和图2，本发明提供一种网版10，用于与刮刀配合印刷锡膏，设置间隔排列的数个开口12及分别连通沿所述刮刀的刮涂方向排列的相邻开口12的数个连通孔14，在涂布锡膏时每一连通孔14能平衡与该连通孔14相邻的两个开口12之间的锡膏高度。\n\n[0033]具体地，所述开口12贯穿所述网版10的上表面与下表面，所述连通孔14位于所述网版10上表面与下表面之间，即所述数个连通孔14并未露出于所述网版10上表面与下表面，所述连通孔14的厚度小于所述网版10的厚度。\n\n[0034]具体地，所述网版10由钢制成，用于印刷锡膏于面光源的MINI LED基板上，所述数个开口12呈阵列排布。\n\n[0035]具体地，所述数个连通孔14沿所述刮刀的刮涂的方向设置。在采用刮刀沿所述刮刀的刮涂方向刮涂锡膏时，锡膏在流动过程中具有沿所述刮刀的刮涂方向的流动剪切力，有利于锡膏填充所述数个连通孔14和驱赶所述数个连通孔14中的锡膏的气泡，保证每一连通孔14能顺畅地贯通与该连通孔14相邻的两个开口12，有效平衡所述刮刀的刮涂方向上任意两个相邻的开口12之间的锡膏高度。\n\n[0036]具体地，本实施例的所述连通孔14的截面形状为圆形或椭圆形，当然，根据实际需求，所述连通孔14的截面形状还可以为多边形，例如方形、梯形等形状，这并不影响本发明实施的效果。\n\n[0037]具体地，所述连通孔14具有适当的截面大小，可克服锡膏在流动过程中的粘度和张力，实现锡膏的均匀流动。\n\n[0038]上述网版10包括间隔排列的数个开口12及分别连通沿所述刮刀的刮涂方向排列的相邻开口12的数个连通孔14，在涂布锡膏时所述连通孔14能平衡与该连通孔14相邻的两个开口12之间的锡膏高度，采用该网版10用于制作面光源，能够保证面光源的亮度均一性。\n\n[0039]基于上述网版10，请参阅图3，本发明还提供一种面光源的制作方法，包括以下步骤：\n\n[0040]步骤S1、请参阅图4，提供MINI LED基板20，所述MINI LED基板20包括间隔排列的数个焊盘21。\n\n[0041]步骤S2、请参阅图5，提供网版10与刮刀40，所述网版10设置分别对应所述数个焊盘21的间隔排列的数个开口12及分别连通沿所述刮刀40刮涂方向排列的相邻开口12的数个连通孔14。\n\n[0042]具体地，所述开口12贯穿所述网版10的上表面与下表面，所述连通孔14位于所述网版10上表面与下表面之间，即所述数个连通孔14并未露出于所述网版10上表面与下表面，所述连通孔14的厚度小于所述网版10的厚度。\n\n[0043]具体地，所述网版10由钢制成，用于印刷锡膏于面光源的MINI LED基板20上，所述数个开口12呈阵列排布。\n\n[0044]步骤S3、放置所述网版10于所述MINI LED基板20上，使所述数个开口12与所述数个焊盘21一一对齐。\n\n[0045]具体地，所述数个开口12分别露出所述数个焊盘21，以利于后续刮涂锡膏22于所述网版10上，所述锡膏22能够通过开口12印刷在所述MINI LED基板20的焊盘21上。\n\n[0046]步骤S4、提供锡膏22，利用所述刮刀40刮涂所述锡膏22于所述网版10上，以在所述MINI LED基板20的焊盘21上印刷上所述锡膏22。\n\n[0047]需要说明的，在采用刮刀40沿所述刮刀40刮涂方向刮涂锡膏22时，锡膏22在流动过程中具有沿所述刮刀40刮涂方向的流动剪切力，有利于锡膏22填充所述数个连通孔14和驱赶所述数个连通孔14中的锡膏22的气泡，保证每一连通孔14能顺畅地贯通与该连通孔14相邻的两个开口12，有效平衡所述刮刀40刮涂方向上任意两个相邻的开口12之间的锡膏22高度。若所述刮刀40沿垂直于所述刮刀40刮涂向进行刮涂锡膏22时，则可能会造成所述连通孔14在填充锡膏22时存在气泡，使得所述连通孔14无法贯通与该连通孔14相邻的两个开口12，进而无法平衡所述刮刀40刮涂方向上任意两个相邻的开口12之间的锡膏22高度。\n\n[0048]步骤S5、请参阅图6，提供数个MINI LED芯片30，将所述数个MINI LED芯片30分别安装于所述数个焊盘21上。\n\n[0049]具体地，本实施例的连通孔14的截面形状为圆形或椭圆形，当然，根据实际需求，所述连通孔14的截面形状还可以为多边形，例如方形、梯形等形状，这并不影响本发明实施的效果。\n\n[0050]具体地，所述连通孔14具有适当的截面大小，可克服锡膏22在流动过程中的粘度和张力，实现锡膏22的均匀流动。\n\n[0051]具体地，所述面光源为MINI LED面光源。\n\n[0052]上述面光源的制作方法通过在所述网版10上沿所述刮刀40刮涂方向排列的相邻开口12之间设置连通孔14，所述连通孔14的走向为与刮刀40刮涂的方向相同，从而利用类似连通器的原理使MINI LED基板20的焊盘21上的锡膏22量达到均衡，保证后续锡膏22和MINI LED芯片30的接触面平整均一，从而保证后续MINI LED芯片30排布的均匀性和出光均匀性，提升面光源整面的亮度均一性。\n\n[0053]基于上述面光源的制作方法，本发明还提供了一种直下式背光模组的制作方法，所述直下式背光模组包括面光源，采用如上所述的面光源的制作方法来制作面光源。\n\n[0054]上述直下式背光模组的制作方法，采用如上所述的面光源的制作方法来制作面光源，能够保证后续MINI LED芯片30排布的均匀性和出光均匀性，有效提升面光源整面的亮度均一性。\n\n[0055]综上所述，本发明的网版包括间隔排列的数个开口及分别连通沿刮刀的刮涂方向排列的相邻开口的数个连通孔，在涂布锡膏时所述连通孔能平衡与该连通孔相邻的两个开口之间的锡膏高度，有效保证锡膏涂布的均匀性，采用该网版用于制作面光源，能够保证面光源的亮度均一性。本发明的面光源的制作方法使用上述网版，通过在所述网版上沿刮刀的刮涂方向排列的相邻的两个开口之间设置连通孔，所述连通孔的走向为与刮刀的刮涂方向相同，从而利用类似连通器的原理使MINI LED基板的焊盘上的锡膏量达到均衡，保证后续锡膏和MINI LED芯片的接触面平整均一，从而保证后续MINI LED芯片排布的均匀性和出光均匀性，提升面光源整面的亮度均一性。本发明的直下式背光模组的制作方法，所述直下式背光模组包括面光源，采用如上所述的面光源的制作方法来制作面光源，能够保证MINILED芯片排布的均匀性和出光均匀性，有效提升面光源整面的亮度均一性。\n\n[0056]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种网版、面光源的制作方法及直下式背光模组的制作方法。\n\n背景技术\n\n[0002]随着显示技术的发展，液晶显示装置(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。现有市场上的液晶显示装置大部分为背光型液晶显示装置，其包括液晶显示面板及背光模组(Backlight Module)。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，两片玻璃基板中间有许多垂直和水平的细小电线，通过通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。由于液晶显示面板本身不发光，需要借由背光模组提供的光源来正常显示影像，因此，背光模组成为液晶显示装置的关键组件之一。背光模组依照光源入射位置的不同分成侧入式背光模组与直下式背光模组两种。\n\n[0003]面光源属于直下式背光的一种，面光源在制备过程中需要先利用网版在LED基板上刷一层锡膏，并让锡膏均匀摊开在LED基板的焊盘上，锡膏涂布的均匀性对后续LED芯片阵列排布均匀性有着至关重要的作用，然而现有的网版结构在锡膏涂布中很难保证锡膏涂布的均匀性，孔径大小的公差、锡膏刮涂的方向均会导致锡膏在焊盘上的均匀性受到影响，从而使LED芯片在LED基板上的排列规整性变差，出光光形发生改变，同时LED芯片与锡膏的接触面积不均匀也导致LED芯片出光亮度不均匀，综上两点导致面光源中整面亮度的不均。\n\n发明内容\n\n[0004]本发明的目的在于提供一种网版，能够保证锡膏涂布的均匀性，采用该网版用于制作面光源，能够保证面光源的亮度均一性。\n\n[0005]本发明的目的还在于提供一种面光源的制作方法，能够保证MINI LED芯片排布的均匀性和出光均匀性，有效提升面光源整面的亮度均一性。\n\n[0006]本发明的目的还在于提供一种直下式背光模组的制作方法，所述直下式背光模组包括面光源，能够保证MINI LED芯片排布的均匀性和出光均匀性，有效提升面光源整面的亮度均一性。\n\n[0007]为实现上述目的，本发明提供了一种网版，用于与刮刀配合印刷锡膏，设置间隔排列的数个开口及分别连通沿所述刮刀的刮涂方向排列的相邻开口的数个连通孔。\n\n[0008]所述开口贯穿所述网版的上表面与下表面，所述连通孔位于所述网版上表面与下表面之间。\n\n[0009]所述连通孔的横截面形状为圆形、椭圆形、方形或梯形。\n\n[0010]所述数个连通孔沿所述刮刀的刮涂方向设置。\n\n[0011]所述网版由钢制成，用于印刷锡膏于面光源的MINI LED基板上，所述开口呈阵列排布。\n\n[0012]本发明还提供了一种面光源的制作方法，包括以下步骤：\n\n[0013]步骤S1、提供MINI LED基板，所述MINI LED基板包括间隔排列的数个焊盘；\n\n[0014]步骤S2、提供网版与刮刀，所述网版设置分别对应所述数个焊盘的间隔排列的数个开口及分别连通沿所述刮刀的刮涂方向排列的相邻开口的数个连通孔；\n\n[0015]步骤S3、放置所述网版于所述MINI LED基板上，使所述数个开口与所述数个焊盘一一对齐；\n\n[0016]步骤S4、提供锡膏，利用所述刮刀刮涂所述锡膏于所述网版上，以在所述MINI LED基板的焊盘上印刷上所述锡膏；\n\n[0017]步骤S5、提供数个MINI LED芯片，将所述数个MINI LED芯片分别安装于所述数个焊盘上。\n\n[0018]所述开口贯穿所述网版的上表面与下表面，所述连通孔位于所述网版上表面与下表面之间。\n\n[0019]所述连通孔的横截面形状为圆形、椭圆形、方形或梯形。\n\n[0020]所述网版由钢制成，所述开口呈阵列排布，所述数个连通孔沿所述刮刀的刮涂方向设置。\n\n[0021]本发明还提供了一种直下式背光模组的制作方法，所述直下式背光模组包括面光源，采用如上所述的面光源的制作方法来制作面光源。\n\n[0022]本发明的有益效果：本发明提供的一种网版，包括间隔排列的数个开口及分别连通沿刮刀的刮涂方向排列的相邻开口的数个连通孔，在涂布锡膏时所述连通孔能平衡与该连通孔相邻的两个开口之间的锡膏高度，保证锡膏涂布的均匀性。本发明提供的一种面光源的制作方法，使用上述网版，通过在所述网版上沿刮刀的刮涂方向排列的相邻的两个开口之间设置连通孔，所述连通孔的走向为与刮刀的刮涂方向相同，从而利用类似连通器的原理使MINI LED基板的焊盘上的锡膏量达到均衡，保证后续锡膏和MINI LED芯片的接触面平整均一，从而保证后续MINI LED芯片排布的均匀性和出光均匀性，提升面光源整面的亮度均一性。本发明提供的一种直下式背光模组的制作方法，所述直下式背光模组包括面光源，采用如上所述的面光源的制作方法来制作面光源，能够保证MINI LED芯片排布的均匀性和出光均匀性，有效提升面光源整面的亮度均一性。\n\n附图说明\n\n[0023]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0024]附图中，\n\n[0025]图1为本发明的网版的示意图；\n\n[0026]图2为图1的网版沿A-A’线的截面示意图；\n\n[0027]图3为本发明的面光源的制作方法的流程图；\n\n[0028]图4为本发明的面光源的制作方法的步骤S1的示意图；\n\n[0029]图5为本发明的面光源的制作方法的步骤S2至步骤S4的示意图；\n\n[0030]图6为本发明的面光源的制作方法的步骤S5的示意图。\n\n具体实施方式\n\n[0031]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0032]请参阅图1和图2，本发明提供一种网版10，用于与刮刀配合印刷锡膏，设置间隔排列的数个开口12及分别连通沿所述刮刀的刮涂方向排列的相邻开口12的数个连通孔14，在涂布锡膏时每一连通孔14能平衡与该连通孔14相邻的两个开口12之间的锡膏高度。\n\n[0033]具体地，所述开口12贯穿所述网版10的上表面与下表面，所述连通孔14位于所述网版10上表面与下表面之间，即所述数个连通孔14并未露出于所述网版10上表面与下表面，所述连通孔14的厚度小于所述网版10的厚度。\n\n[0034]具体地，所述网版10由钢制成，用于印刷锡膏于面光源的MINI LED基板上，所述数个开口12呈阵列排布。\n\n[0035]具体地，所述数个连通孔14沿所述刮刀的刮涂的方向设置。在采用刮刀沿所述刮刀的刮涂方向刮涂锡膏时，锡膏在流动过程中具有沿所述刮刀的刮涂方向的流动剪切力，有利于锡膏填充所述数个连通孔14和驱赶所述数个连通孔14中的锡膏的气泡，保证每一连通孔14能顺畅地贯通与该连通孔14相邻的两个开口12，有效平衡所述刮刀的刮涂方向上任意两个相邻的开口12之间的锡膏高度。\n\n[0036]具体地，本实施例的所述连通孔14的截面形状为圆形或椭圆形，当然，根据实际需求，所述连通孔14的截面形状还可以为多边形，例如方形、梯形等形状，这并不影响本发明实施的效果。\n\n[0037]具体地，所述连通孔14具有适当的截面大小，可克服锡膏在流动过程中的粘度和张力，实现锡膏的均匀流动。\n\n[0038]上述网版10包括间隔排列的数个开口12及分别连通沿所述刮刀的刮涂方向排列的相邻开口12的数个连通孔14，在涂布锡膏时所述连通孔14能平衡与该连通孔14相邻的两个开口12之间的锡膏高度，采用该网版10用于制作面光源，能够保证面光源的亮度均一性。\n\n[0039]基于上述网版10，请参阅图3，本发明还提供一种面光源的制作方法，包括以下步骤：\n\n[0040]步骤S1、请参阅图4，提供MINI LED基板20，所述MINI LED基板20包括间隔排列的数个焊盘21。\n\n[0041]步骤S2、请参阅图5，提供网版10与刮刀40，所述网版10设置分别对应所述数个焊盘21的间隔排列的数个开口12及分别连通沿所述刮刀40刮涂方向排列的相邻开口12的数个连通孔14。\n\n[0042]具体地，所述开口12贯穿所述网版10的上表面与下表面，所述连通孔14位于所述网版10上表面与下表面之间，即所述数个连通孔14并未露出于所述网版10上表面与下表面，所述连通孔14的厚度小于所述网版10的厚度。\n\n[0043]具体地，所述网版10由钢制成，用于印刷锡膏于面光源的MINI LED基板20上，所述数个开口12呈阵列排布。\n\n[0044]步骤S3、放置所述网版10于所述MINI LED基板20上，使所述数个开口12与所述数个焊盘21一一对齐。\n\n[0045]具体地，所述数个开口12分别露出所述数个焊盘21，以利于后续刮涂锡膏22于所述网版10上，所述锡膏22能够通过开口12印刷在所述MINI LED基板20的焊盘21上。\n\n[0046]步骤S4、提供锡膏22，利用所述刮刀40刮涂所述锡膏22于所述网版10上，以在所述MINI LED基板20的焊盘21上印刷上所述锡膏22。\n\n[0047]需要说明的，在采用刮刀40沿所述刮刀40刮涂方向刮涂锡膏22时，锡膏22在流动过程中具有沿所述刮刀40刮涂方向的流动剪切力，有利于锡膏22填充所述数个连通孔14和驱赶所述数个连通孔14中的锡膏22的气泡，保证每一连通孔14能顺畅地贯通与该连通孔14相邻的两个开口12，有效平衡所述刮刀40刮涂方向上任意两个相邻的开口12之间的锡膏22高度。若所述刮刀40沿垂直于所述刮刀40刮涂向进行刮涂锡膏22时，则可能会造成所述连通孔14在填充锡膏22时存在气泡，使得所述连通孔14无法贯通与该连通孔14相邻的两个开口12，进而无法平衡所述刮刀40刮涂方向上任意两个相邻的开口12之间的锡膏22高度。\n\n[0048]步骤S5、请参阅图6，提供数个MINI LED芯片30，将所述数个MINI LED芯片30分别安装于所述数个焊盘21上。\n\n[0049]具体地，本实施例的连通孔14的截面形状为圆形或椭圆形，当然，根据实际需求，所述连通孔14的截面形状还可以为多边形，例如方形、梯形等形状，这并不影响本发明实施的效果。\n\n[0050]具体地，所述连通孔14具有适当的截面大小，可克服锡膏22在流动过程中的粘度和张力，实现锡膏22的均匀流动。\n\n[0051]具体地，所述面光源为MINI LED面光源。\n\n[0052]上述面光源的制作方法通过在所述网版10上沿所述刮刀40刮涂方向排列的相邻开口12之间设置连通孔14，所述连通孔14的走向为与刮刀40刮涂的方向相同，从而利用类似连通器的原理使MINI LED基板20的焊盘21上的锡膏22量达到均衡，保证后续锡膏22和MINI LED芯片30的接触面平整均一，从而保证后续MINI LED芯片30排布的均匀性和出光均匀性，提升面光源整面的亮度均一性。\n\n[0053]基于上述面光源的制作方法，本发明还提供了一种直下式背光模组的制作方法，所述直下式背光模组包括面光源，采用如上所述的面光源的制作方法来制作面光源。\n\n[0054]上述直下式背光模组的制作方法，采用如上所述的面光源的制作方法来制作面光源，能够保证后续MINI LED芯片30排布的均匀性和出光均匀性，有效提升面光源整面的亮度均一性。\n\n[0055]综上所述，本发明的网版包括间隔排列的数个开口及分别连通沿刮刀的刮涂方向排列的相邻开口的数个连通孔，在涂布锡膏时所述连通孔能平衡与该连通孔相邻的两个开口之间的锡膏高度，有效保证锡膏涂布的均匀性，采用该网版用于制作面光源，能够保证面光源的亮度均一性。本发明的面光源的制作方法使用上述网版，通过在所述网版上沿刮刀的刮涂方向排列的相邻的两个开口之间设置连通孔，所述连通孔的走向为与刮刀的刮涂方向相同，从而利用类似连通器的原理使MINI LED基板的焊盘上的锡膏量达到均衡，保证后续锡膏和MINI LED芯片的接触面平整均一，从而保证后续MINI LED芯片排布的均匀性和出光均匀性，提升面光源整面的亮度均一性。本发明的直下式背光模组的制作方法，所述直下式背光模组包括面光源，采用如上所述的面光源的制作方法来制作面光源，能够保证MINILED芯片排布的均匀性和出光均匀性，有效提升面光源整面的亮度均一性。\n\n[0056]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10621, 23675, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微晶粒发光二极管显示面板。\n\n背景技术\n\n[0002]目前，轻薄、便利、节能、画面细腻、降低成本、功能多样化始终是显示器件的发展目标。同时，随着致力于提供各种形式的电子装置，已进行研究和开发来提供包括在电子装置中的各种形式的显示器件。而现有的液晶显示器件包含背光模组、下偏光片、阵列基板、液晶层、彩膜基板和上偏光片，这些层叠结构限制了现有的液晶显示器件的厚度与形状，导致现有的液晶显示器件很难做到更加轻薄与柔性。此外，彩膜基板中的使用至少损耗了60％的光能，只能依靠提高液晶显示器件的背光亮度来满足现实器件的亮度要求，这无疑增加了液晶显示器件的功耗。\n\n发明内容\n\n[0003]为解决上述技术问题，本发明提供一种微晶粒发光二极管显示面板，可以做到更加轻薄且具有柔性，还不会增加显示面板的功耗。\n\n[0004]本发明提供的一种微晶粒发光二极管显示面板，包括柔性基板、阵列排布的多个发光二极管、位于所述多个发光二极管上方的衍射光栅以及光散射膜、位于所述光散射膜上方的多个光阀；\n\n[0005]其中，所述柔性基板包含有驱动电路，所述多个发光二极管固定在所述柔性基板上；所述驱动电路与所述多个发光二极管连接，用于分别驱动所述多个发光二极管发出白光；\n\n[0006]所述衍射光栅，用于将所述发光二极管发出的白光进行分光，形成多种不同波长的出射光；\n\n[0007]所述光散射膜，用于将所述出射光中相同波长的出射光聚集，将不同波长的出射光进行分散，形成至少一种颜色的基色光；\n\n[0008]所述多个光阀，用于分别调节所述基色光的强度。\n\n[0009]优选地，所述柔性基板还包含FPC连接板以及PCB基板，所述驱动电路固定在所述PCB基板上，所述PCB基板固定在所述FPC连接板上，所述多个发光二极管通过倒装芯片的方式固定在所述驱动电路上。\n\n[0010]优选地，所述多个发光二极管与所述驱动电路之间通过多个半球状结构固定在所述驱动电路上，所述半球状结构由金属合金制成。\n\n[0011]优选地，所述多个发光二极管划分为多个阵列排布的驱动单元，每一驱动单元包含至少一条驱动线路，每一条驱动线路包含至少一个串联连接的发光二极管，且每一个驱动单元均包含一个电信号输入端和电信号输出端。\n\n[0012]优选地，所述多个阵列排布的驱动单元中的每一行驱动单元连接在同一条金属线上，且所述多个阵列排布的驱动单元中的每一列驱动单元连接在同一条金属线上。\n\n[0013]优选地，一个所述驱动单元及其上方的衍射光栅以及光散射膜构成所述显示面板的一个像素单元。\n\n[0014]优选地，一个所述像素单元包含至少一种颜色的子像素，每一子像素包含所述衍射光栅以及所述光散射膜上发出一种颜色的基色光的区域。\n\n[0015]优选地，还包括多个阵列排布的支撑柱，每一个光阀固定在相邻的两个支撑柱上，且每一个光阀的开口处正对相邻两个支撑柱之间的区域。\n\n[0016]优选地，还包括位于所述多个光阀上方的柔性保护层。\n\n[0017]优选地，还包括与所述驱动电路连接的连接器，所述驱动电路通过所述连接器与显示主板通讯连接，用于接收来自所述显示主板的数据信号，并将所述数据信号转化为符合所述发光二极管工作要求的信号电压，且将所述信号电压输送至所述发光二极管，控制所述发光二极管发出白光。\n\n[0018]实施本发明，具有如下有益效果：本发明将多个发光二极管固定在柔性基板上，通过柔性基板的驱动电路控制发光二极管发出白光，发光二极管发出的白光经过衍射光栅和光散射膜后，形成至少一种颜色的基色光，通过光阀控制各基色光的光线强度，产生亮度差异和颜色差异，实现柔性显示效果。本发明中的显示面板与现有的液晶显示器件相比，只包含柔性基板、发光二极管、衍射光栅、光散射膜、光阀，而不包含背光模组、下偏光片、阵列基板、液晶层、彩膜基板和上偏光片这种层叠结构，可以做到更加轻薄且具有柔性，由于不包含彩膜基板，不会损耗大量的光能，不需要背光亮度来满足显示面板的亮度要求，因而不会增加显示面板的功耗。\n\n附图说明\n\n[0019]为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0020]图1是本发明提供的微晶粒发光二极管显示面板的结构示意图。\n\n[0021]图2是本发明提供的光阀的示意图。\n\n[0022]图3是本发明提供的微晶粒发光二极管显示面板上驱动单元的示意图。\n\n[0023]图4是本发明提供的微晶粒发光二极管显示面板的电路示意图。\n\n[0024]图5是本发明提供的驱动单元背部走线的示意图。\n\n[0025]图6是本发明提供的微晶粒发光二极管显示面板的像素单元的示意图。\n\n[0026]图7是本发明提供的连接器走线的示意图。\n\n具体实施方式\n\n[0027]本发明提供一种微晶粒发光二极管2显示面板，如图1所示，该显示面板包括柔性基板1、阵列排布的多个发光二极管2、位于多个发光二极管2上方的衍射光栅3以及光散射膜4、位于光散射膜4上方的多个光阀，图1中所示的61a、61b、61c均为光阀。如图2所示，光阀61a、61b、61c对应的开口处分别为62a、62b、62c。\n\n[0028]其中，柔性基板1包含有驱动电路11，多个发光二极管2通过倒装芯片的方式固定在柔性基板1上；驱动电路11与多个发光二极管2连接，用于分别驱动多个发光二极管2发出白光。\n\n[0029]衍射光栅3用于将发光二极管2发出的白光进行分光，形成多种不同波长的出射光。\n\n[0030]光散射膜4用于将出射光中相同波长的出射光聚集，将不同波长的出射光进行分散，形成至少一种颜色的基色光，例如可以是红绿蓝三种颜色的基色光。\n\n[0031]多个光阀用于分别调节基色光的强度。\n\n[0032]进一步地，柔性基板1还包含FPC(Flexible Printed Circuit，柔性印刷电路)连接板13以及PCB(Printed Circuit Board，印刷电路板)基板12，驱动电路11固定在PCB基板12上，PCB基板12固定在FPC连接板13上，多个发光二极管2通过倒装芯片的方式固定在驱动电路11上。FPC连接板13用于将PCB基板12与外部的显示主板连接，PCB基板12可以用于为发光二极管2提供电源电压。在另一实施例中，PCB基板12可以为金属板，厚度为0.2mm。\n\n[0033]进一步地，多个发光二极管2与驱动电路11之间通过多个半球状结构5固定在驱动电路11上，半球状结构5由金属合金制成。\n\n[0034]进一步地，如图3所示，多个发光二极管2划分为多个阵列排布的驱动单元20，每一驱动单元20包含至少一条驱动线路，每一条驱动线路包含至少一个串联连接的发光二极管2，且每一个驱动单元20均包含一个电信号输入端和电信号输出端。流入每个驱动单元20的最大电流由驱动单元20中发光二极管2的个数决定。\n\n[0035]进一步地，如图4所示，多个阵列排布的驱动单元20中的每一行驱动单元20连接在同一条金属线上，且多个阵列排布的驱动单元20中的每一列驱动单元20连接在同一条金属线上，例如最上面一行驱动单元20连接在金属线101上，最右侧一列驱动单元20连接在金属线102上。驱动单元20背部走线如图5所示，金属线101的形状可以为波浪线。\n\n[0036]进一步地，如图6所示，一个驱动单元20及其上方的衍射光栅3以及光散射膜4构成显示面板的一个像素单元40。在显示面板进行显示时，一个像素单元40提供一个色彩数值，一个驱动单元20可以包含多个发光二极管2，当一个驱动单元20中有一个发光二极管2出现故障时，还可以有其他的发光二极管2发光，使得每个像素单元40可以正常显示色彩。在上述的显示面板中，可以根据显示面板的像素大小设计发光二极管2的颗数。发光二极管2发出的白光经过衍射光栅3和光散射膜4后，形成至少一种颜色的基色光，基色光出射至每个像素单元的开口区域，即出射至每个像素单元上方光阀的开口处。\n\n[0037]进一步地，一个像素单元40包含至少一种颜色的子像素，每一子像素包含衍射光栅3以及光散射膜4上发出一种颜色的基色光的区域，如图6所示，红色子像素为标号41，绿色子像素为标号42，蓝色子像素为标号43。每个子像素上方都对应有一个光阀，当光阀关闭时，从显示面板上无法观察到子像素发光，子像素呈现关闭状态。当光阀开启时，也即是子像素开启，在显示面板进行显示过程中，光阀处于高速开关状态中，根据光阀开关的频率，显示面板可以显示不同灰阶的画面。\n\n[0038]例如，每一个像素单元上方包含如图1或2中所示的光阀61a、61b、61c，光阀61a为红色子像素上方的光阀，光阀61b为绿色子像素上方的光阀，光阀61c为蓝色子像素上方的光阀。\n\n[0039]进一步地，微晶粒发光二极管2显示面板还包括多个阵列排布的支撑柱8，每一个光阀固定在相邻的两个支撑柱8上，且每一个光阀的开口处正对相邻两个支撑柱8之间的区域。\n\n[0040]进一步地，微晶粒发光二极管2显示面板还包括位于多个光阀上方的柔性保护层7。\n\n[0041]进一步地，微晶粒发光二极管2显示面板还包括与驱动电路11连接的连接器9，驱动电路11通过连接器9与显示主板通讯连接。驱动电路11用于接收来自显示主板的数据信号，并将数据信号转化为符合发光二极管2工作要求的信号电压，且将信号电压输送至发光二极管2，控制发光二极管2发出白光。在另一实施例中，如图7所示，，连接器9与PIN脚14电性连接，通过PIN脚14连接至外部的显示主板，PIN脚14的宽度为54.85mm。\n\n[0042]综上所述，本发明将多个发光二极管2固定在柔性基板1上，通过柔性基板1的驱动电路11控制发光二极管2发出白光，发光二极管2发出的白光经过衍射光栅3和光散射膜4后，形成至少一种颜色的基色光，通过光阀控制各基色光的光线强度，产生亮度差异和颜色差异，实现柔性显示效果。本发明中的显示面板与现有的液晶显示器件相比，只包含柔性基板1、发光二极管2、衍射光栅3、光散射膜4、光阀，而不包含背光模组、下偏光片、阵列基板、液晶层、彩膜基板和上偏光片这种层叠结构，可以做到更加轻薄且具有柔性，由于不包含彩膜基板，不会损耗大量的光能，不需要背光亮度来满足显示面板的亮度要求，因而不会增加显示面板的功耗。\n\n[0043]以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明，不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本发明的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微晶粒发光二极管显示面板。\n\n背景技术\n\n[0002]目前，轻薄、便利、节能、画面细腻、降低成本、功能多样化始终是显示器件的发展目标。同时，随着致力于提供各种形式的电子装置，已进行研究和开发来提供包括在电子装置中的各种形式的显示器件。而现有的液晶显示器件包含背光模组、下偏光片、阵列基板、液晶层、彩膜基板和上偏光片，这些层叠结构限制了现有的液晶显示器件的厚度与形状，导致现有的液晶显示器件很难做到更加轻薄与柔性。此外，彩膜基板中的使用至少损耗了60％的光能，只能依靠提高液晶显示器件的背光亮度来满足现实器件的亮度要求，这无疑增加了液晶显示器件的功耗。\n\n发明内容\n\n[0003]为解决上述技术问题，本发明提供一种微晶粒发光二极管显示面板，可以做到更加轻薄且具有柔性，还不会增加显示面板的功耗。\n\n[0004]本发明提供的一种微晶粒发光二极管显示面板，包括柔性基板、阵列排布的多个发光二极管、位于所述多个发光二极管上方的衍射光栅以及光散射膜、位于所述光散射膜上方的多个光阀；\n\n[0005]其中，所述柔性基板包含有驱动电路，所述多个发光二极管固定在所述柔性基板上；所述驱动电路与所述多个发光二极管连接，用于分别驱动所述多个发光二极管发出白光；\n\n[0006]所述衍射光栅，用于将所述发光二极管发出的白光进行分光，形成多种不同波长的出射光；\n\n[0007]所述光散射膜，用于将所述出射光中相同波长的出射光聚集，将不同波长的出射光进行分散，形成至少一种颜色的基色光；\n\n[0008]所述多个光阀，用于分别调节所述基色光的强度。\n\n[0009]优选地，所述柔性基板还包含FPC连接板以及PCB基板，所述驱动电路固定在所述PCB基板上，所述PCB基板固定在所述FPC连接板上，所述多个发光二极管通过倒装芯片的方式固定在所述驱动电路上。\n\n[0010]优选地，所述多个发光二极管与所述驱动电路之间通过多个半球状结构固定在所述驱动电路上，所述半球状结构由金属合金制成。\n\n[0011]优选地，所述多个发光二极管划分为多个阵列排布的驱动单元，每一驱动单元包含至少一条驱动线路，每一条驱动线路包含至少一个串联连接的发光二极管，且每一个驱动单元均包含一个电信号输入端和电信号输出端。\n\n[0012]优选地，所述多个阵列排布的驱动单元中的每一行驱动单元连接在同一条金属线上，且所述多个阵列排布的驱动单元中的每一列驱动单元连接在同一条金属线上。\n\n[0013]优选地，一个所述驱动单元及其上方的衍射光栅以及光散射膜构成所述显示面板的一个像素单元。\n\n[0014]优选地，一个所述像素单元包含至少一种颜色的子像素，每一子像素包含所述衍射光栅以及所述光散射膜上发出一种颜色的基色光的区域。\n\n[0015]优选地，还包括多个阵列排布的支撑柱，每一个光阀固定在相邻的两个支撑柱上，且每一个光阀的开口处正对相邻两个支撑柱之间的区域。\n\n[0016]优选地，还包括位于所述多个光阀上方的柔性保护层。\n\n[0017]优选地，还包括与所述驱动电路连接的连接器，所述驱动电路通过所述连接器与显示主板通讯连接，用于接收来自所述显示主板的数据信号，并将所述数据信号转化为符合所述发光二极管工作要求的信号电压，且将所述信号电压输送至所述发光二极管，控制所述发光二极管发出白光。\n\n[0018]实施本发明，具有如下有益效果：本发明将多个发光二极管固定在柔性基板上，通过柔性基板的驱动电路控制发光二极管发出白光，发光二极管发出的白光经过衍射光栅和光散射膜后，形成至少一种颜色的基色光，通过光阀控制各基色光的光线强度，产生亮度差异和颜色差异，实现柔性显示效果。本发明中的显示面板与现有的液晶显示器件相比，只包含柔性基板、发光二极管、衍射光栅、光散射膜、光阀，而不包含背光模组、下偏光片、阵列基板、液晶层、彩膜基板和上偏光片这种层叠结构，可以做到更加轻薄且具有柔性，由于不包含彩膜基板，不会损耗大量的光能，不需要背光亮度来满足显示面板的亮度要求，因而不会增加显示面板的功耗。\n\n附图说明\n\n[0019]为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0020]图1是本发明提供的微晶粒发光二极管显示面板的结构示意图。\n\n[0021]图2是本发明提供的光阀的示意图。\n\n[0022]图3是本发明提供的微晶粒发光二极管显示面板上驱动单元的示意图。\n\n[0023]图4是本发明提供的微晶粒发光二极管显示面板的电路示意图。\n\n[0024]图5是本发明提供的驱动单元背部走线的示意图。\n\n[0025]图6是本发明提供的微晶粒发光二极管显示面板的像素单元的示意图。\n\n[0026]图7是本发明提供的连接器走线的示意图。\n\n具体实施方式\n\n[0027]本发明提供一种微晶粒发光二极管2显示面板，如图1所示，该显示面板包括柔性基板1、阵列排布的多个发光二极管2、位于多个发光二极管2上方的衍射光栅3以及光散射膜4、位于光散射膜4上方的多个光阀，图1中所示的61a、61b、61c均为光阀。如图2所示，光阀61a、61b、61c对应的开口处分别为62a、62b、62c。\n\n[0028]其中，柔性基板1包含有驱动电路11，多个发光二极管2通过倒装芯片的方式固定在柔性基板1上；驱动电路11与多个发光二极管2连接，用于分别驱动多个发光二极管2发出白光。\n\n[0029]衍射光栅3用于将发光二极管2发出的白光进行分光，形成多种不同波长的出射光。\n\n[0030]光散射膜4用于将出射光中相同波长的出射光聚集，将不同波长的出射光进行分散，形成至少一种颜色的基色光，例如可以是红绿蓝三种颜色的基色光。\n\n[0031]多个光阀用于分别调节基色光的强度。\n\n[0032]进一步地，柔性基板1还包含FPC(Flexible Printed Circuit，柔性印刷电路)连接板13以及PCB(Printed Circuit Board，印刷电路板)基板12，驱动电路11固定在PCB基板12上，PCB基板12固定在FPC连接板13上，多个发光二极管2通过倒装芯片的方式固定在驱动电路11上。FPC连接板13用于将PCB基板12与外部的显示主板连接，PCB基板12可以用于为发光二极管2提供电源电压。在另一实施例中，PCB基板12可以为金属板，厚度为0.2mm。\n\n[0033]进一步地，多个发光二极管2与驱动电路11之间通过多个半球状结构5固定在驱动电路11上，半球状结构5由金属合金制成。\n\n[0034]进一步地，如图3所示，多个发光二极管2划分为多个阵列排布的驱动单元20，每一驱动单元20包含至少一条驱动线路，每一条驱动线路包含至少一个串联连接的发光二极管2，且每一个驱动单元20均包含一个电信号输入端和电信号输出端。流入每个驱动单元20的最大电流由驱动单元20中发光二极管2的个数决定。\n\n[0035]进一步地，如图4所示，多个阵列排布的驱动单元20中的每一行驱动单元20连接在同一条金属线上，且多个阵列排布的驱动单元20中的每一列驱动单元20连接在同一条金属线上，例如最上面一行驱动单元20连接在金属线101上，最右侧一列驱动单元20连接在金属线102上。驱动单元20背部走线如图5所示，金属线101的形状可以为波浪线。\n\n[0036]进一步地，如图6所示，一个驱动单元20及其上方的衍射光栅3以及光散射膜4构成显示面板的一个像素单元40。在显示面板进行显示时，一个像素单元40提供一个色彩数值，一个驱动单元20可以包含多个发光二极管2，当一个驱动单元20中有一个发光二极管2出现故障时，还可以有其他的发光二极管2发光，使得每个像素单元40可以正常显示色彩。在上述的显示面板中，可以根据显示面板的像素大小设计发光二极管2的颗数。发光二极管2发出的白光经过衍射光栅3和光散射膜4后，形成至少一种颜色的基色光，基色光出射至每个像素单元的开口区域，即出射至每个像素单元上方光阀的开口处。\n\n[0037]进一步地，一个像素单元40包含至少一种颜色的子像素，每一子像素包含衍射光栅3以及光散射膜4上发出一种颜色的基色光的区域，如图6所示，红色子像素为标号41，绿色子像素为标号42，蓝色子像素为标号43。每个子像素上方都对应有一个光阀，当光阀关闭时，从显示面板上无法观察到子像素发光，子像素呈现关闭状态。当光阀开启时，也即是子像素开启，在显示面板进行显示过程中，光阀处于高速开关状态中，根据光阀开关的频率，显示面板可以显示不同灰阶的画面。\n\n[0038]例如，每一个像素单元上方包含如图1或2中所示的光阀61a、61b、61c，光阀61a为红色子像素上方的光阀，光阀61b为绿色子像素上方的光阀，光阀61c为蓝色子像素上方的光阀。\n\n[0039]进一步地，微晶粒发光二极管2显示面板还包括多个阵列排布的支撑柱8，每一个光阀固定在相邻的两个支撑柱8上，且每一个光阀的开口处正对相邻两个支撑柱8之间的区域。\n\n[0040]进一步地，微晶粒发光二极管2显示面板还包括位于多个光阀上方的柔性保护层7。\n\n[0041]进一步地，微晶粒发光二极管2显示面板还包括与驱动电路11连接的连接器9，驱动电路11通过连接器9与显示主板通讯连接。驱动电路11用于接收来自显示主板的数据信号，并将数据信号转化为符合发光二极管2工作要求的信号电压，且将信号电压输送至发光二极管2，控制发光二极管2发出白光。在另一实施例中，如图7所示，，连接器9与PIN脚14电性连接，通过PIN脚14连接至外部的显示主板，PIN脚14的宽度为54.85mm。\n\n[0042]综上所述，本发明将多个发光二极管2固定在柔性基板1上，通过柔性基板1的驱动电路11控制发光二极管2发出白光，发光二极管2发出的白光经过衍射光栅3和光散射膜4后，形成至少一种颜色的基色光，通过光阀控制各基色光的光线强度，产生亮度差异和颜色差异，实现柔性显示效果。本发明中的显示面板与现有的液晶显示器件相比，只包含柔性基板1、发光二极管2、衍射光栅3、光散射膜4、光阀，而不包含背光模组、下偏光片、阵列基板、液晶层、彩膜基板和上偏光片这种层叠结构，可以做到更加轻薄且具有柔性，由于不包含彩膜基板，不会损耗大量的光能，不需要背光亮度来满足显示面板的亮度要求，因而不会增加显示面板的功耗。\n\n[0043]以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明，不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本发明的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10622, 23676, '技术领域\n\n[0001]本发明涉及一种显示技术领域，尤其涉及一种Mini LED背光模组及荧光膜层的制作方法。\n\n背景技术\n\n[0002]Mini LED是把直下式LED背光模块缩小化，使面板色彩非常好，对比非常高。MiniLED与Micro LED是完全不同的制程技术，Mini LED是放在背光模块中，可能只要七千颗，但Micro LED是显示器，是直接放在画素(pixel)上，可能高达六百万颗，这时良率就变得很重要，Micro LED的应用将是非常大的挑战。Mini LED把侧边背光源几十颗的LED灯珠，变成了直下背光源数千颗、数万颗，甚至更多的灯珠，其HDR精细度达到前所未有水平——虽然不像OLED理论值的逐像素调节，但是至少足以满足未来HDR影像信号对调节区间的极致需要。此外采用Mini LED背光设计的LCD面板拥有更好的衍色性，但厚度可以做到跟OLED一样。\n\n[0003]尽管单颗Mini LED尺寸较小，但由于采取直下式背光，将可透过Local Dimming(局部调光)设计达到高动态范围(HDR)的屏幕效果，呈现更细致的屏幕画面，不仅与OLED的厚度一样，且演色性比OLED好。\n\n[0004]Mini LED技术对于高动态范围图像传感器以及全面屏的实现起到了重要作用，但目前该技术在实现全面屏的过程中，灯影(Hotspot)和四周漏光等都是很难解决的问题。而且小尺寸模组的边框要求越来越窄，且其厚度要求越来越薄，Mini LED既不能靠四周加挡墙来防漏光，也不能像大尺寸模组一样增加lens改变光型来解决Hotspot，导致小尺寸模组的灯影和四周漏光等问题更难解决，对于Mini LED的应用带来障碍。\n\n发明内容\n\n[0005]鉴于现有技术存在的不足，本发明提供了一种Mini LED背光模组及荧光膜层的制作方法，可以有效解决Mini LED背光过程中的灯影和四周漏光的问题，简单易行，且降低了制作成本。\n\n[0006]为了实现上述的目的，本发明采用了如下的技术方案：\n\n[0007]一种Mini LED背光模组，包括LED光源和荧光膜层，所述LED光源包括基板和阵列排布在所述基板的mini LED灯珠，所述荧光膜层设置在所述LED光源的出光方向上，所述荧光膜层朝向所述mini LED灯珠的表面开设有阵列设置的凹槽。\n\n[0008]作为其中一种实施方式，所述凹槽的数量不少于所述mini LED灯珠的数量，且每个所述mini LED灯珠与至少一个所述凹槽正对。\n\n[0009]作为其中一种实施方式，所述凹槽的径向尺寸不小于与其正对的所述mini LED灯珠的径向尺寸，每个所述mini LED灯珠与一个所述凹槽正对。\n\n[0010]或者，所述凹槽的径向尺寸小于与其正对的所述mini LED灯珠的径向尺寸，每个所述mini LED灯珠与多个所述凹槽正对。\n\n[0011]作为其中一种实施方式，所述凹槽的底面为凹陷的弧面。\n\n[0012]作为其中一种实施方式，所述荧光膜层还包括沿其边缘布置的一圈间隔设置的凸柱，所述凸柱与所述凹槽分别设于所述荧光膜层的两相对表面。\n\n[0013]作为其中一种实施方式，所述的Mini LED背光模组还包括扩散膜，所述扩散膜底面的边缘紧贴在所述凸柱的表面。\n\n[0014]作为其中一种实施方式，所述的Mini LED背光模组还包括遮光胶，所述遮光胶粘贴在所述扩散膜上表面的边缘，并延伸至同时贴附在所述凸柱侧面以及所述基板的底面。\n\n[0015]本发明的另一目的在于提供一种荧光膜层的制作方法，包括：\n\n[0016]在模具内涂布荧光材料，所述模具包括底壁和侧壁围成的腔体，所述底壁阵列地设置有若干凸起；\n\n[0017]将荧光材料连同模具放入固化腔内，使所述荧光材料老化成型；\n\n[0018]从所述模具剥离成型后的所述荧光材料，得到表面具有阵列设置的凹槽的荧光膜层。\n\n[0019]作为其中一种实施方式，所述模具还包括设置在所述底壁外沿的一圈筒体部，在模具内涂布荧光材料时，还包括在所述筒体部内填充荧光材料。\n\n[0020]本发明通过设计一种具有特定形状的荧光膜层，并将其放置在mini LED灯珠正前方，即可避免漏光并改变光线路径，从而解决了Mini LED背光过程中的灯影和四周漏光的问题，简单易行，且降低了制作成本。\n\n附图说明\n\n[0021]图1为本发明实施例的显示装置的结构示意图；\n\n[0022]图2为本发明实施例的一种荧光膜层的结构示意图；\n\n[0023]图3为本发明实施例的另一种荧光膜层的应用状态示意图；\n\n[0024]图4为本发明实施例的荧光膜层的制作方法示意图；\n\n[0025]图5为本发明实施例的模具的俯视结构示意图；\n\n[0026]图6为本发明实施例的模具的一个剖面图。\n\n具体实施方式\n\n[0027]为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。\n\n[0028]参阅图1，本发明实施例的Mini LED背光模组包括LED光源10和荧光膜层20，LED光源10包括基板11和阵列排布在基板11的若干mini LED灯珠12，由于尺寸约在100微米的Mini LED无需克服巨量转移的技术门槛，其量产具有可行性，可应用在大尺寸显示屏的背光(如电视)中，也可以作为小尺寸显示屏(如手机等)的背光应用。荧光膜层20设置在LED光源10的出光方向上，荧光膜层20朝向mini LED灯珠12的表面开设有阵列设置的凹槽200。\n\n[0029]如图2所示，优选地，本实施例的凹槽200的底面为凹陷的弧面，例如，仅凹槽200的底面为弧面，或者，凹槽的截面为弧面。可以理解的是，在其他实施方式中，凹槽200也可以为其它形状，例如，呈锥形截面，但其对于mini LED灯珠12的发光均匀性能够起到更好的促进作用。\n\n[0030]需要注意的是，凹槽200的数量不少于mini LED灯珠12的数量，且每个mini LED灯珠12与至少一个凹槽200正对。如图1和图2，为凹槽200的数量等于mini LED灯珠12的数量的情形，每个mini LED灯珠12与一个凹槽200正对，凹槽200的径向尺寸不小于与其正对的mini LED灯珠12的径向尺寸，进一步优选凹槽200的径向尺寸大于与其正对的mini LED灯珠12的径向尺寸，mini LED灯珠12部分嵌入凹槽200正对的凹槽200内，使得自mini LED灯珠12发出的绝大部分光线均由凹槽200处理后进入荧光膜层20，发散性能更好，发光更均匀，同时还能减薄直下式背光源的厚度。\n\n[0031]如图3所示，为凹槽200的径向尺寸小于与其正对的mini LED灯珠12的径向尺寸的情形，每个mini LED灯珠12与多个凹槽200正对，自一个mini LED灯珠12射出的光线，分别经多个微小的凹槽200发散处理后进入荧光膜层20，使得荧光膜层20各处的光线几乎一致，匀光性能更好。\n\n[0032]除了具有凹槽200外，荧光膜层20还包括沿其边缘布置的一圈间隔设置的凸柱21，凸柱21与凹槽200分别设于荧光膜层20的两相对表面，且凸柱21将凹槽200包围于其中。此外，Mini LED背光模组还包括扩散膜30合遮光胶40，扩散膜30底面的边缘紧贴在凸柱21的表面，通过荧光膜层20四周的凸柱21对扩散膜30进行固定，同时，遮光胶40粘贴在扩散膜30上表面的边缘，并延伸至同时贴附在凸柱21侧面以及基板11的底面，避免了背光模组的边缘及侧面漏光。\n\n[0033]为实现荧光膜层20与LED光源10的对位设置，LED光源10的基板11边缘设计有对位mark(标记)，在组装荧光膜层20时，利用荧光膜层20的轮廓与对位mark对齐即可，然后再将扩散膜30通过遮光胶40固定在荧光膜层20上。\n\n[0034]结合图1，背光模组还可包括上增光片L1、下增光片L2，上增光片L1、下增光片L2自上而下依次设于扩散膜30前方，下增光片L2与扩散膜30将遮光胶40夹设于其中。当背光模组与显示面板P组装后，显示面板P位于上增光片L1的前方，自mini LED灯珠12发出的光依次经荧光膜层20、下增光片L2、上增光片L1后，自显示面板P底部进入，从而为显示面板P提供背光源。\n\n[0035]如图4所示，本发明还提供了一种荧光膜层的制作方法，主要包括：\n\n[0036]S01、在模具1内涂布荧光材料，如图5和图6所示，模具1包括底壁和侧壁围成的腔体1a，底壁阵列地设置有若干凸起1b，模具1的底壁外沿还具有一圈筒体部1c，荧光材料涂布在腔体1a内覆盖所有的凸起1b的同时，还填充在筒体部1c内；\n\n[0037]S02、将荧光材料连同模具放入固化腔内，使荧光材料老化成型，固化腔内的温度为60-90℃，模具1底壁的荧光材料和筒体部1c内的荧光材料同步进行老化；\n\n[0038]S03、从模具剥离成型后的荧光材料，得到表面具有阵列设置的凹槽200的荧光膜层20，与此同时，凹槽200外围还形成一圈凸柱21，可用作支撑固定扩散膜30。优选筒体部1c的截面为矩形，最终制作出的凸柱21相应地位方形柱体，即可实现可靠地支撑，也能方便遮光胶40的贴附固定。\n\n[0039]本发明通过设计种具有特定形状的荧光膜层，并将其放置在mini LED灯珠正前方，可以避免边缘漏光并改变光线路径，从而解决了Mini LED背光过程中的灯影和四周漏光的问题，简单易行，且降低了制作成本，本发明的背光模组还能实现结构的紧凑性和薄型化，并能利用简单的结构实现侧面漏光。\n\n[0040]以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。', '技术领域\n\n[0001]本发明涉及一种显示技术领域，尤其涉及一种Mini LED背光模组及荧光膜层的制作方法。\n\n背景技术\n\n[0002]Mini LED是把直下式LED背光模块缩小化，使面板色彩非常好，对比非常高。MiniLED与Micro LED是完全不同的制程技术，Mini LED是放在背光模块中，可能只要七千颗，但Micro LED是显示器，是直接放在画素(pixel)上，可能高达六百万颗，这时良率就变得很重要，Micro LED的应用将是非常大的挑战。Mini LED把侧边背光源几十颗的LED灯珠，变成了直下背光源数千颗、数万颗，甚至更多的灯珠，其HDR精细度达到前所未有水平——虽然不像OLED理论值的逐像素调节，但是至少足以满足未来HDR影像信号对调节区间的极致需要。此外采用Mini LED背光设计的LCD面板拥有更好的衍色性，但厚度可以做到跟OLED一样。\n\n[0003]尽管单颗Mini LED尺寸较小，但由于采取直下式背光，将可透过Local Dimming(局部调光)设计达到高动态范围(HDR)的屏幕效果，呈现更细致的屏幕画面，不仅与OLED的厚度一样，且演色性比OLED好。\n\n[0004]Mini LED技术对于高动态范围图像传感器以及全面屏的实现起到了重要作用，但目前该技术在实现全面屏的过程中，灯影(Hotspot)和四周漏光等都是很难解决的问题。而且小尺寸模组的边框要求越来越窄，且其厚度要求越来越薄，Mini LED既不能靠四周加挡墙来防漏光，也不能像大尺寸模组一样增加lens改变光型来解决Hotspot，导致小尺寸模组的灯影和四周漏光等问题更难解决，对于Mini LED的应用带来障碍。\n\n发明内容\n\n[0005]鉴于现有技术存在的不足，本发明提供了一种Mini LED背光模组及荧光膜层的制作方法，可以有效解决Mini LED背光过程中的灯影和四周漏光的问题，简单易行，且降低了制作成本。\n\n[0006]为了实现上述的目的，本发明采用了如下的技术方案：\n\n[0007]一种Mini LED背光模组，包括LED光源和荧光膜层，所述LED光源包括基板和阵列排布在所述基板的mini LED灯珠，所述荧光膜层设置在所述LED光源的出光方向上，所述荧光膜层朝向所述mini LED灯珠的表面开设有阵列设置的凹槽。\n\n[0008]作为其中一种实施方式，所述凹槽的数量不少于所述mini LED灯珠的数量，且每个所述mini LED灯珠与至少一个所述凹槽正对。\n\n[0009]作为其中一种实施方式，所述凹槽的径向尺寸不小于与其正对的所述mini LED灯珠的径向尺寸，每个所述mini LED灯珠与一个所述凹槽正对。\n\n[0010]或者，所述凹槽的径向尺寸小于与其正对的所述mini LED灯珠的径向尺寸，每个所述mini LED灯珠与多个所述凹槽正对。\n\n[0011]作为其中一种实施方式，所述凹槽的底面为凹陷的弧面。\n\n[0012]作为其中一种实施方式，所述荧光膜层还包括沿其边缘布置的一圈间隔设置的凸柱，所述凸柱与所述凹槽分别设于所述荧光膜层的两相对表面。\n\n[0013]作为其中一种实施方式，所述的Mini LED背光模组还包括扩散膜，所述扩散膜底面的边缘紧贴在所述凸柱的表面。\n\n[0014]作为其中一种实施方式，所述的Mini LED背光模组还包括遮光胶，所述遮光胶粘贴在所述扩散膜上表面的边缘，并延伸至同时贴附在所述凸柱侧面以及所述基板的底面。\n\n[0015]本发明的另一目的在于提供一种荧光膜层的制作方法，包括：\n\n[0016]在模具内涂布荧光材料，所述模具包括底壁和侧壁围成的腔体，所述底壁阵列地设置有若干凸起；\n\n[0017]将荧光材料连同模具放入固化腔内，使所述荧光材料老化成型；\n\n[0018]从所述模具剥离成型后的所述荧光材料，得到表面具有阵列设置的凹槽的荧光膜层。\n\n[0019]作为其中一种实施方式，所述模具还包括设置在所述底壁外沿的一圈筒体部，在模具内涂布荧光材料时，还包括在所述筒体部内填充荧光材料。\n\n[0020]本发明通过设计一种具有特定形状的荧光膜层，并将其放置在mini LED灯珠正前方，即可避免漏光并改变光线路径，从而解决了Mini LED背光过程中的灯影和四周漏光的问题，简单易行，且降低了制作成本。\n\n附图说明\n\n[0021]图1为本发明实施例的显示装置的结构示意图；\n\n[0022]图2为本发明实施例的一种荧光膜层的结构示意图；\n\n[0023]图3为本发明实施例的另一种荧光膜层的应用状态示意图；\n\n[0024]图4为本发明实施例的荧光膜层的制作方法示意图；\n\n[0025]图5为本发明实施例的模具的俯视结构示意图；\n\n[0026]图6为本发明实施例的模具的一个剖面图。\n\n具体实施方式\n\n[0027]为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。\n\n[0028]参阅图1，本发明实施例的Mini LED背光模组包括LED光源10和荧光膜层20，LED光源10包括基板11和阵列排布在基板11的若干mini LED灯珠12，由于尺寸约在100微米的Mini LED无需克服巨量转移的技术门槛，其量产具有可行性，可应用在大尺寸显示屏的背光(如电视)中，也可以作为小尺寸显示屏(如手机等)的背光应用。荧光膜层20设置在LED光源10的出光方向上，荧光膜层20朝向mini LED灯珠12的表面开设有阵列设置的凹槽200。\n\n[0029]如图2所示，优选地，本实施例的凹槽200的底面为凹陷的弧面，例如，仅凹槽200的底面为弧面，或者，凹槽的截面为弧面。可以理解的是，在其他实施方式中，凹槽200也可以为其它形状，例如，呈锥形截面，但其对于mini LED灯珠12的发光均匀性能够起到更好的促进作用。\n\n[0030]需要注意的是，凹槽200的数量不少于mini LED灯珠12的数量，且每个mini LED灯珠12与至少一个凹槽200正对。如图1和图2，为凹槽200的数量等于mini LED灯珠12的数量的情形，每个mini LED灯珠12与一个凹槽200正对，凹槽200的径向尺寸不小于与其正对的mini LED灯珠12的径向尺寸，进一步优选凹槽200的径向尺寸大于与其正对的mini LED灯珠12的径向尺寸，mini LED灯珠12部分嵌入凹槽200正对的凹槽200内，使得自mini LED灯珠12发出的绝大部分光线均由凹槽200处理后进入荧光膜层20，发散性能更好，发光更均匀，同时还能减薄直下式背光源的厚度。\n\n[0031]如图3所示，为凹槽200的径向尺寸小于与其正对的mini LED灯珠12的径向尺寸的情形，每个mini LED灯珠12与多个凹槽200正对，自一个mini LED灯珠12射出的光线，分别经多个微小的凹槽200发散处理后进入荧光膜层20，使得荧光膜层20各处的光线几乎一致，匀光性能更好。\n\n[0032]除了具有凹槽200外，荧光膜层20还包括沿其边缘布置的一圈间隔设置的凸柱21，凸柱21与凹槽200分别设于荧光膜层20的两相对表面，且凸柱21将凹槽200包围于其中。此外，Mini LED背光模组还包括扩散膜30合遮光胶40，扩散膜30底面的边缘紧贴在凸柱21的表面，通过荧光膜层20四周的凸柱21对扩散膜30进行固定，同时，遮光胶40粘贴在扩散膜30上表面的边缘，并延伸至同时贴附在凸柱21侧面以及基板11的底面，避免了背光模组的边缘及侧面漏光。\n\n[0033]为实现荧光膜层20与LED光源10的对位设置，LED光源10的基板11边缘设计有对位mark(标记)，在组装荧光膜层20时，利用荧光膜层20的轮廓与对位mark对齐即可，然后再将扩散膜30通过遮光胶40固定在荧光膜层20上。\n\n[0034]结合图1，背光模组还可包括上增光片L1、下增光片L2，上增光片L1、下增光片L2自上而下依次设于扩散膜30前方，下增光片L2与扩散膜30将遮光胶40夹设于其中。当背光模组与显示面板P组装后，显示面板P位于上增光片L1的前方，自mini LED灯珠12发出的光依次经荧光膜层20、下增光片L2、上增光片L1后，自显示面板P底部进入，从而为显示面板P提供背光源。\n\n[0035]如图4所示，本发明还提供了一种荧光膜层的制作方法，主要包括：\n\n[0036]S01、在模具1内涂布荧光材料，如图5和图6所示，模具1包括底壁和侧壁围成的腔体1a，底壁阵列地设置有若干凸起1b，模具1的底壁外沿还具有一圈筒体部1c，荧光材料涂布在腔体1a内覆盖所有的凸起1b的同时，还填充在筒体部1c内；\n\n[0037]S02、将荧光材料连同模具放入固化腔内，使荧光材料老化成型，固化腔内的温度为60-90℃，模具1底壁的荧光材料和筒体部1c内的荧光材料同步进行老化；\n\n[0038]S03、从模具剥离成型后的荧光材料，得到表面具有阵列设置的凹槽200的荧光膜层20，与此同时，凹槽200外围还形成一圈凸柱21，可用作支撑固定扩散膜30。优选筒体部1c的截面为矩形，最终制作出的凸柱21相应地位方形柱体，即可实现可靠地支撑，也能方便遮光胶40的贴附固定。\n\n[0039]本发明通过设计种具有特定形状的荧光膜层，并将其放置在mini LED灯珠正前方，可以避免边缘漏光并改变光线路径，从而解决了Mini LED背光过程中的灯影和四周漏光的问题，简单易行，且降低了制作成本，本发明的背光模组还能实现结构的紧凑性和薄型化，并能利用简单的结构实现侧面漏光。\n\n[0040]以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10623, 23677, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种Micro LED显示面板的制作方法及MicroLED显示面板。\n\n背景技术\n\n[0002]随着可穿戴显示设备的快速发展，出现了微发光二极管(Micro LED，uLED)技术。Micro LED技术即LED微缩化和矩阵化技术，指的是在一个芯片上集成的高密度微小尺寸的LED阵列。Micro LED的耗电量远小于液晶显示器(Liquid Crystal Display，LCD)，与有机发光二极管(Organic Light-Emitting Diode，OLED)一样属于自发光，能够将像素之间的距离从毫米等级降至微米等级，色彩饱和度接近OLED，所以很多厂商把Micro LED视为下一代的显示技术。\n\n[0003]现有技术通过微转印(Micro Transfer Print)法来制作Micro LED阵列：将LED裸芯片(Bare Chip)通过激光剥离(Laser Lift-off，LLO)技术从蓝宝石衬底上分离开后，使用一个图案化的转移基板(Transfer Layer)将LED裸芯片从供给基板吸附起来，转移到接收基板。具体地，这个接收基板是已经预先制备完成电路图案的硅基板，通过将转移基板与接收基板进行对位，转移基板上所吸附的LED裸芯片被贴附到接收基板的匹配位置，再剥离转移基板，即可完成LED裸芯片的转移。诸如US2013/0210194，US2013/0128585等专利对微转印技术有较为细致地描述。\n\n[0004]现有的Micro LED按照结构不同，可分为垂直结构的Micro LED和水平结构的Micro LED，垂直结构的Micro LED的两个电极分别位于发光层的上下两侧，水平的结构的Micro LED的两个电极均位于发光层的下侧；相比于水平结构的Micro LED，垂直结构的Micro LED具有以下优势：1、制作工艺与传统TFT-LCD的制作工艺有相近之处，部分机台和设备可以沿用；2、业内已经发展出一些技术来控制垂直结构的Micro LED的漏电流。\n\n[0005]在采用垂直结构的Micro LED的显示面板中，需要对应其上下电极分别设置上像素电极和下像素电极来驱动其工作，其中上像素电极制作于封装基板上，下像素电极制作于驱动基板上，然后将封装基板与驱动基板对组得到Micro LED显示面板，此时在封装基板与驱动基板进行对组时，由于Micro LED的上方存在高低不平，即各个Micro LED的高度并不是完全相同的，容易出现部分上像素电极与Micro LED的上电极不能正确贴合，导致上像素电极与Micro LED的上电极不能实现电性连接的问题。\n\n发明内容\n\n[0006]本发明的目的在于提供一种Micro LED显示面板的制作方法，能够提升Micro LED显示面板的对组效果，避免上像素电极与Micro LED的上电极的连接不良。\n\n[0007]本发明的目的还在于提供一种Micro LED显示面板，能够提升Micro LED显示面板的对组效果，避免上像素电极与Micro LED的上电极的连接不良。\n\n[0008]为实现上述目的，本发明提供了一种Micro LED显示面板的制作方法，包括如下步骤：\n\n[0009]步骤S1、提供一驱动基板，在所述驱动基板上形成阵列排布的多个下像素电极，在各个下像素电极上分别形成垂直结构的Micro LED，所述各个下像素电极分别与其对应Micro LED的下电极电性连接；\n\n[0010]步骤S2、提供一封装基板，在所述封装基板形成阵列排布的多个上像素电极，在各个上像素电极上形成弹性导电层；\n\n[0011]步骤S3、将所述封装基板与所述驱动基板对组并加压，使得各个上像素电极通过弹性导电层分别与其对应的Micro LED固定贴合并与所述Micro LED的上电极电性连接。\n\n[0012]所述步骤S2中通过在各个上像素电极上涂布第一溶液形成所述弹性导电层。\n\n[0013]所述第一溶液包括：第一溶剂以及分散于所述第一溶剂中的多个弹性导电球，第一溶剂为能够固化的溶剂。\n\n[0014]所述步骤S3中在所述封装基板与所述驱动基板对组并加压的同时还进行固化处理，使得弹性导电层中的第一溶剂固化。\n\n[0015]在所述第一溶剂固化前，所述弹性导电层的厚度小于所述弹性导电球在自然状态下的直径的两倍，在所述第一溶剂固化后，所述弹性导电层的厚度小于所述弹性导电球在自然状态下的直径。\n\n[0016]所述步骤S2中通过在各个上像素电极上涂布具有弹性的导电胶形成所述弹性导电层。\n\n[0017]所述封装基板与所述驱动基板对组贴合前，还包括在所述驱动基板或封装基板上形成支撑物。\n\n[0018]本发明还提供一种Micro LED显示面板，包括：驱动基板、与所述驱动基板相对设置的封装基板、设于所述驱动基板靠近封装基板的一侧阵列排布的多个下像素电极、设于所述封装基板靠近所述驱动基板的一侧的与所述多个下像素电极相对的多个上像素电极、设于各个下像素电极与上像素电极之间的Micro LED以及设于所述各个Micro LED与上像素电极之间的弹性导电层，所述Micro LED为垂直结构的Micro LED，所述各个下像素电极分别与其对应的Micro LED的下电极电性连接，所述各个上像素电极通过弹性导电层分别与其对应的Micro LED的上电极电性连接。\n\n[0019]所述弹性导电层的材料为第一溶液或具有弹性的导电胶，所述第一溶液包括：第一溶剂以及分散于所述第一溶剂中的多个弹性导电球，第一溶剂为能够固化的溶剂。\n\n[0020]所述Micro LED显示面板还包括位于所述驱动基板靠近封装基板的一侧或所述封装基板靠近所述驱动基板的一侧的支撑物。\n\n[0021]本发明的有益效果：本发明提供一种Micro LED显示面板的制作方法，通过在位于封装基板上的上像素电极上形成弹性导电层，在封装基板与驱动基板对组时，通过弹性导电层实现上像素电极与Micro LED的上电极的电性连接，可利用弹性导电层的弹性填补各个Micro LED之间的高度差，避免上像素电极与Micro LED的上电极的连接不良，提升MicroLED显示面板的对组效果和Micro LED显示面板的制程良率。本发明还提供一种Micro LED显示面板，能够提升Micro LED显示面板的对组效果，避免上像素电极与Micro LED的上电极的连接不良。\n\n附图说明\n\n[0022]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0023]附图中，\n\n[0024]图1为本发明的Micro LED显示面板的制作方法的步骤S1的示意图；\n\n[0025]图2为本发明的Micro LED显示面板的制作方法的步骤S1的示意图；\n\n[0026]图3为本发明的Micro LED显示面板的制作方法的步骤S3的示意图暨本发明的Micro LED显示面板的示意图；\n\n[0027]图4为本发明的Micro LED显示面板的制作方法的流程图。\n\n具体实施方式\n\n[0028]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0029]请参阅图4，本发明提供一种Micro LED显示面板的制作方法，包括如下步骤：\n\n[0030]步骤S1、请参阅图1，提供一驱动基板11，在所述驱动基板11上形成阵列排布的多个下像素电极12，在各个下像素电极12上分别形成垂直结构的Micro LED13，所述各个下像素电极12分别与其对应Micro LED13的下电极电性连接；\n\n[0031]步骤S2、请参阅图2，提供一封装基板21，在所述封装基板21上形成阵列排布的多个上像素电极22，在各个上像素电极22上形成弹性导电层23；\n\n[0032]步骤S3、请参阅图3，将所述封装基板21与所述驱动基板11对组并加压，使得各个上像素电极22通过弹性导电层23分别与其对应的Micro LED13固定贴合并与所述MicroLED13的上电极电性连接。\n\n[0033]具体地，所述步骤S2中通过在各个上像素电极22上涂布第一溶液形成所述弹性导电层23，所述第一溶液为有弹性且能导电的溶液，从而通过所述第一溶液形成所述弹性导电层23。\n\n[0034]具体地，在本发明的第一实施例中，所述第一溶液包括：第一溶剂以及分散于所述第一溶剂中的多个弹性导电球，第一溶剂为能够固化的溶剂。优选地，所述第一溶剂为树脂溶剂或其他可固化的溶剂，所述弹性导电球为外表面包覆有导电材料的纳米级或微米级的二氧化硅小球，或者所述弹性导电球为金球(Au ball)。所述包覆所述二氧化硅小球的导电材料可以为碳纳米管。\n\n[0035]进一步地，在第一实施例中，所述步骤S3中在所述封装基板21与所述驱动基板11对组并加压的同时还进行固化处理，使得弹性导电层23中的第一溶剂固化。所述固化处理的方法可以根据第一溶剂的性质的不同选择加热固化或紫外光照射固化。\n\n[0036]进一步地，在第一实施例中，在所述第一溶剂固化前，所述弹性导电层23的厚度小于所述弹性导电球在自然状态下的直径的两倍，在所述第一溶剂固化后，所述弹性导电层23的厚度小于所述弹性导电球在自然状态下的直径，以保证所述弹性导电层23固化后，能够通过所述弹性导电球使得所述上像素电极22与所述Micro LED 13的上电极保持良好的欧姆接触。\n\n[0037]需要说明的是，在本发明的第一实施例中，通过设置所述弹性导电球还能够部分破坏Micro LED 13出射系统的全反射，使得Micro LED 13的光取出效率更高。\n\n[0038]具体地，在本发明的第二实施例中，所述步骤S2中还可以通过在各个上像素电极22上涂布具有弹性的导电胶形成所述弹性导电层23。\n\n[0039]需要说明的是，所述弹性导电层23在对组后自然状态下(未受压的状态)的厚度应大于所述高度最低的Micro LED 13的上电极到其对应的上像素电极22之间的距离，以保证所有的弹性导电层23在受压后能够均能够接触到其对应的Micro LED13的上电极，使得所述上像素电极22与所述Micro LED 13的上电极保持良好的欧姆接触。\n\n[0040]具体地，为了提升所述驱动基板11和封装基板21的受压能力，本发明在所述封装基板21与所述驱动基板11对组贴合前，还包括在所述驱动基板11或封装基板21上形成支撑物30，所述支撑物30的高度小于所述驱动基板11和封装基板21之间的间隙。进一步地，对应到本发明的第一实施例中，所述支撑物30的高度与所述弹性导电球在自然状态下的直径之和还应该大于所述驱动基板11和封装基板21之间的间隙。\n\n[0041]进一步地，请参阅图3，本发明还提供一种Micro LED显示面板，包括：驱动基板11、与所述驱动基板11相对设置的封装基板21、设于所述驱动基板11靠近封装基板21的一侧阵列排布的多个下像素电极12、设于所述封装基板21靠近所述驱动基板11的一侧的与所述多个下像素电极12相对的多个上像素电极22、设于各个下像素电极12与上像素电极22之间的Micro LED 13以及设于所述各个Micro LED 13与上像素电极22之间的弹性导电层23，所述Micro LED 13为垂直结构的Micro LED，所述各个下像素电极12分别与其对应的MicroLED13的下电极电性连接，所述各个上像素电极22通过弹性导电层23分别与其对应的MicroLED13的上电极电性连接。\n\n[0042]具体地，在本发明的第一实施例中，所述弹性导电层23的材料为第一溶液，所述第一溶液包括：第一溶剂以及分散于所述第一溶剂中的多个弹性导电球，第一溶剂为能够固化的溶剂。\n\n[0043]优选地，所述第一溶剂为树脂溶剂或其他可固化的溶剂，所述弹性导电球为外表面包覆有导电材料的纳米级或微米级的二氧化硅小球，或者所述弹性导电球为金球(Auball)。所述包覆所述二氧化硅小球的导电材料可以为碳纳米管。\n\n[0044]进一步地，在第一实施例中，所述第一溶液涂布形成所述弹性导电层23后需要进行固化处理，使其中的第一溶剂固化。所述固化处理的方法可以根据第一溶剂的性质的不同选择加热固化或紫外光照射固化。\n\n[0045]进一步地，在所述第一溶剂固化前，所述弹性导电层23的厚度小于所述弹性导电球在自然状态下的直径的两倍，在所述第一溶剂固化后，所述弹性导电层23的厚度小于所述弹性导电球在自然状态下的直径，以保证所述弹性导电层23固化后，能够通过所述弹性导电球使得所述上像素电极22与所述Micro LED13的上电极保持良好的欧姆接触。\n\n[0046]需要说明的，在本发明的第一实施例中，通过设置所述弹性导电球还能够部分破坏Micro LED 13出射系统的全反射，使得Micro LED 13的光取出效率更高。\n\n[0047]具体地，在本发明的第二实施例中，所述弹性导电层23的材料还可以为具有弹性的导电胶。\n\n[0048]需要说明的是，所述弹性导电层23在对组后自然状态下(未受压的状态)的厚度应大于所述高度最低的Micro LED 13的上电极到其对应的上像素电极22之间的距离，以保证所有的弹性导电层23在受压后能够均能够接触到其对应的Micro LED13的上电极，使得所述上像素电极22与所述Micro LED 13的上电极保持良好的欧姆接触。\n\n[0049]具体地，为了提升所述驱动基板11和封装基板21的受压能力，本发明Micro LED显示面板还包括位于所述驱动基板11靠近封装基板21的一侧或所述封装基板21靠近所述驱动基板11的一侧的支撑物30，所述支撑物30的高度小于所述驱动基板11和封装基板21之间的间隙。\n\n[0050]进一步地，对应到本发明的第一实施例中，所述支撑物30的高度与所述弹性导电球在自然状态下的直径之和还应该大于所述驱动基板11和封装基板21之间的间隙。\n\n[0051]综上所述，本发明提供一种Micro LED显示面板的制作方法，通过在位于封装基板上的上像素电极上形成弹性导电层，在封装基板与驱动基板对组时，通过弹性导电层实现上像素电极与Micro LED的上电极的电性连接，可利用弹性导电层的弹性填补各个MicroLED之间的高度差，避免上像素电极与Micro LED的上电极的连接不良，提升Micro LED显示面板的对组效果和Micro LED显示面板的制程良率。本发明还提供一种Micro LED显示面板，能够提升Micro LED显示面板的对组效果，避免上像素电极与Micro LED的上电极的连接不良。\n\n[0052]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种Micro LED显示面板的制作方法及MicroLED显示面板。\n\n背景技术\n\n[0002]随着可穿戴显示设备的快速发展，出现了微发光二极管(Micro LED，uLED)技术。Micro LED技术即LED微缩化和矩阵化技术，指的是在一个芯片上集成的高密度微小尺寸的LED阵列。Micro LED的耗电量远小于液晶显示器(Liquid Crystal Display，LCD)，与有机发光二极管(Organic Light-Emitting Diode，OLED)一样属于自发光，能够将像素之间的距离从毫米等级降至微米等级，色彩饱和度接近OLED，所以很多厂商把Micro LED视为下一代的显示技术。\n\n[0003]现有技术通过微转印(Micro Transfer Print)法来制作Micro LED阵列：将LED裸芯片(Bare Chip)通过激光剥离(Laser Lift-off，LLO)技术从蓝宝石衬底上分离开后，使用一个图案化的转移基板(Transfer Layer)将LED裸芯片从供给基板吸附起来，转移到接收基板。具体地，这个接收基板是已经预先制备完成电路图案的硅基板，通过将转移基板与接收基板进行对位，转移基板上所吸附的LED裸芯片被贴附到接收基板的匹配位置，再剥离转移基板，即可完成LED裸芯片的转移。诸如US2013/0210194，US2013/0128585等专利对微转印技术有较为细致地描述。\n\n[0004]现有的Micro LED按照结构不同，可分为垂直结构的Micro LED和水平结构的Micro LED，垂直结构的Micro LED的两个电极分别位于发光层的上下两侧，水平的结构的Micro LED的两个电极均位于发光层的下侧；相比于水平结构的Micro LED，垂直结构的Micro LED具有以下优势：1、制作工艺与传统TFT-LCD的制作工艺有相近之处，部分机台和设备可以沿用；2、业内已经发展出一些技术来控制垂直结构的Micro LED的漏电流。\n\n[0005]在采用垂直结构的Micro LED的显示面板中，需要对应其上下电极分别设置上像素电极和下像素电极来驱动其工作，其中上像素电极制作于封装基板上，下像素电极制作于驱动基板上，然后将封装基板与驱动基板对组得到Micro LED显示面板，此时在封装基板与驱动基板进行对组时，由于Micro LED的上方存在高低不平，即各个Micro LED的高度并不是完全相同的，容易出现部分上像素电极与Micro LED的上电极不能正确贴合，导致上像素电极与Micro LED的上电极不能实现电性连接的问题。\n\n发明内容\n\n[0006]本发明的目的在于提供一种Micro LED显示面板的制作方法，能够提升Micro LED显示面板的对组效果，避免上像素电极与Micro LED的上电极的连接不良。\n\n[0007]本发明的目的还在于提供一种Micro LED显示面板，能够提升Micro LED显示面板的对组效果，避免上像素电极与Micro LED的上电极的连接不良。\n\n[0008]为实现上述目的，本发明提供了一种Micro LED显示面板的制作方法，包括如下步骤：\n\n[0009]步骤S1、提供一驱动基板，在所述驱动基板上形成阵列排布的多个下像素电极，在各个下像素电极上分别形成垂直结构的Micro LED，所述各个下像素电极分别与其对应Micro LED的下电极电性连接；\n\n[0010]步骤S2、提供一封装基板，在所述封装基板形成阵列排布的多个上像素电极，在各个上像素电极上形成弹性导电层；\n\n[0011]步骤S3、将所述封装基板与所述驱动基板对组并加压，使得各个上像素电极通过弹性导电层分别与其对应的Micro LED固定贴合并与所述Micro LED的上电极电性连接。\n\n[0012]所述步骤S2中通过在各个上像素电极上涂布第一溶液形成所述弹性导电层。\n\n[0013]所述第一溶液包括：第一溶剂以及分散于所述第一溶剂中的多个弹性导电球，第一溶剂为能够固化的溶剂。\n\n[0014]所述步骤S3中在所述封装基板与所述驱动基板对组并加压的同时还进行固化处理，使得弹性导电层中的第一溶剂固化。\n\n[0015]在所述第一溶剂固化前，所述弹性导电层的厚度小于所述弹性导电球在自然状态下的直径的两倍，在所述第一溶剂固化后，所述弹性导电层的厚度小于所述弹性导电球在自然状态下的直径。\n\n[0016]所述步骤S2中通过在各个上像素电极上涂布具有弹性的导电胶形成所述弹性导电层。\n\n[0017]所述封装基板与所述驱动基板对组贴合前，还包括在所述驱动基板或封装基板上形成支撑物。\n\n[0018]本发明还提供一种Micro LED显示面板，包括：驱动基板、与所述驱动基板相对设置的封装基板、设于所述驱动基板靠近封装基板的一侧阵列排布的多个下像素电极、设于所述封装基板靠近所述驱动基板的一侧的与所述多个下像素电极相对的多个上像素电极、设于各个下像素电极与上像素电极之间的Micro LED以及设于所述各个Micro LED与上像素电极之间的弹性导电层，所述Micro LED为垂直结构的Micro LED，所述各个下像素电极分别与其对应的Micro LED的下电极电性连接，所述各个上像素电极通过弹性导电层分别与其对应的Micro LED的上电极电性连接。\n\n[0019]所述弹性导电层的材料为第一溶液或具有弹性的导电胶，所述第一溶液包括：第一溶剂以及分散于所述第一溶剂中的多个弹性导电球，第一溶剂为能够固化的溶剂。\n\n[0020]所述Micro LED显示面板还包括位于所述驱动基板靠近封装基板的一侧或所述封装基板靠近所述驱动基板的一侧的支撑物。\n\n[0021]本发明的有益效果：本发明提供一种Micro LED显示面板的制作方法，通过在位于封装基板上的上像素电极上形成弹性导电层，在封装基板与驱动基板对组时，通过弹性导电层实现上像素电极与Micro LED的上电极的电性连接，可利用弹性导电层的弹性填补各个Micro LED之间的高度差，避免上像素电极与Micro LED的上电极的连接不良，提升MicroLED显示面板的对组效果和Micro LED显示面板的制程良率。本发明还提供一种Micro LED显示面板，能够提升Micro LED显示面板的对组效果，避免上像素电极与Micro LED的上电极的连接不良。\n\n附图说明\n\n[0022]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0023]附图中，\n\n[0024]图1为本发明的Micro LED显示面板的制作方法的步骤S1的示意图；\n\n[0025]图2为本发明的Micro LED显示面板的制作方法的步骤S1的示意图；\n\n[0026]图3为本发明的Micro LED显示面板的制作方法的步骤S3的示意图暨本发明的Micro LED显示面板的示意图；\n\n[0027]图4为本发明的Micro LED显示面板的制作方法的流程图。\n\n具体实施方式\n\n[0028]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0029]请参阅图4，本发明提供一种Micro LED显示面板的制作方法，包括如下步骤：\n\n[0030]步骤S1、请参阅图1，提供一驱动基板11，在所述驱动基板11上形成阵列排布的多个下像素电极12，在各个下像素电极12上分别形成垂直结构的Micro LED13，所述各个下像素电极12分别与其对应Micro LED13的下电极电性连接；\n\n[0031]步骤S2、请参阅图2，提供一封装基板21，在所述封装基板21上形成阵列排布的多个上像素电极22，在各个上像素电极22上形成弹性导电层23；\n\n[0032]步骤S3、请参阅图3，将所述封装基板21与所述驱动基板11对组并加压，使得各个上像素电极22通过弹性导电层23分别与其对应的Micro LED13固定贴合并与所述MicroLED13的上电极电性连接。\n\n[0033]具体地，所述步骤S2中通过在各个上像素电极22上涂布第一溶液形成所述弹性导电层23，所述第一溶液为有弹性且能导电的溶液，从而通过所述第一溶液形成所述弹性导电层23。\n\n[0034]具体地，在本发明的第一实施例中，所述第一溶液包括：第一溶剂以及分散于所述第一溶剂中的多个弹性导电球，第一溶剂为能够固化的溶剂。优选地，所述第一溶剂为树脂溶剂或其他可固化的溶剂，所述弹性导电球为外表面包覆有导电材料的纳米级或微米级的二氧化硅小球，或者所述弹性导电球为金球(Au ball)。所述包覆所述二氧化硅小球的导电材料可以为碳纳米管。\n\n[0035]进一步地，在第一实施例中，所述步骤S3中在所述封装基板21与所述驱动基板11对组并加压的同时还进行固化处理，使得弹性导电层23中的第一溶剂固化。所述固化处理的方法可以根据第一溶剂的性质的不同选择加热固化或紫外光照射固化。\n\n[0036]进一步地，在第一实施例中，在所述第一溶剂固化前，所述弹性导电层23的厚度小于所述弹性导电球在自然状态下的直径的两倍，在所述第一溶剂固化后，所述弹性导电层23的厚度小于所述弹性导电球在自然状态下的直径，以保证所述弹性导电层23固化后，能够通过所述弹性导电球使得所述上像素电极22与所述Micro LED 13的上电极保持良好的欧姆接触。\n\n[0037]需要说明的是，在本发明的第一实施例中，通过设置所述弹性导电球还能够部分破坏Micro LED 13出射系统的全反射，使得Micro LED 13的光取出效率更高。\n\n[0038]具体地，在本发明的第二实施例中，所述步骤S2中还可以通过在各个上像素电极22上涂布具有弹性的导电胶形成所述弹性导电层23。\n\n[0039]需要说明的是，所述弹性导电层23在对组后自然状态下(未受压的状态)的厚度应大于所述高度最低的Micro LED 13的上电极到其对应的上像素电极22之间的距离，以保证所有的弹性导电层23在受压后能够均能够接触到其对应的Micro LED13的上电极，使得所述上像素电极22与所述Micro LED 13的上电极保持良好的欧姆接触。\n\n[0040]具体地，为了提升所述驱动基板11和封装基板21的受压能力，本发明在所述封装基板21与所述驱动基板11对组贴合前，还包括在所述驱动基板11或封装基板21上形成支撑物30，所述支撑物30的高度小于所述驱动基板11和封装基板21之间的间隙。进一步地，对应到本发明的第一实施例中，所述支撑物30的高度与所述弹性导电球在自然状态下的直径之和还应该大于所述驱动基板11和封装基板21之间的间隙。\n\n[0041]进一步地，请参阅图3，本发明还提供一种Micro LED显示面板，包括：驱动基板11、与所述驱动基板11相对设置的封装基板21、设于所述驱动基板11靠近封装基板21的一侧阵列排布的多个下像素电极12、设于所述封装基板21靠近所述驱动基板11的一侧的与所述多个下像素电极12相对的多个上像素电极22、设于各个下像素电极12与上像素电极22之间的Micro LED 13以及设于所述各个Micro LED 13与上像素电极22之间的弹性导电层23，所述Micro LED 13为垂直结构的Micro LED，所述各个下像素电极12分别与其对应的MicroLED13的下电极电性连接，所述各个上像素电极22通过弹性导电层23分别与其对应的MicroLED13的上电极电性连接。\n\n[0042]具体地，在本发明的第一实施例中，所述弹性导电层23的材料为第一溶液，所述第一溶液包括：第一溶剂以及分散于所述第一溶剂中的多个弹性导电球，第一溶剂为能够固化的溶剂。\n\n[0043]优选地，所述第一溶剂为树脂溶剂或其他可固化的溶剂，所述弹性导电球为外表面包覆有导电材料的纳米级或微米级的二氧化硅小球，或者所述弹性导电球为金球(Auball)。所述包覆所述二氧化硅小球的导电材料可以为碳纳米管。\n\n[0044]进一步地，在第一实施例中，所述第一溶液涂布形成所述弹性导电层23后需要进行固化处理，使其中的第一溶剂固化。所述固化处理的方法可以根据第一溶剂的性质的不同选择加热固化或紫外光照射固化。\n\n[0045]进一步地，在所述第一溶剂固化前，所述弹性导电层23的厚度小于所述弹性导电球在自然状态下的直径的两倍，在所述第一溶剂固化后，所述弹性导电层23的厚度小于所述弹性导电球在自然状态下的直径，以保证所述弹性导电层23固化后，能够通过所述弹性导电球使得所述上像素电极22与所述Micro LED13的上电极保持良好的欧姆接触。\n\n[0046]需要说明的，在本发明的第一实施例中，通过设置所述弹性导电球还能够部分破坏Micro LED 13出射系统的全反射，使得Micro LED 13的光取出效率更高。\n\n[0047]具体地，在本发明的第二实施例中，所述弹性导电层23的材料还可以为具有弹性的导电胶。\n\n[0048]需要说明的是，所述弹性导电层23在对组后自然状态下(未受压的状态)的厚度应大于所述高度最低的Micro LED 13的上电极到其对应的上像素电极22之间的距离，以保证所有的弹性导电层23在受压后能够均能够接触到其对应的Micro LED13的上电极，使得所述上像素电极22与所述Micro LED 13的上电极保持良好的欧姆接触。\n\n[0049]具体地，为了提升所述驱动基板11和封装基板21的受压能力，本发明Micro LED显示面板还包括位于所述驱动基板11靠近封装基板21的一侧或所述封装基板21靠近所述驱动基板11的一侧的支撑物30，所述支撑物30的高度小于所述驱动基板11和封装基板21之间的间隙。\n\n[0050]进一步地，对应到本发明的第一实施例中，所述支撑物30的高度与所述弹性导电球在自然状态下的直径之和还应该大于所述驱动基板11和封装基板21之间的间隙。\n\n[0051]综上所述，本发明提供一种Micro LED显示面板的制作方法，通过在位于封装基板上的上像素电极上形成弹性导电层，在封装基板与驱动基板对组时，通过弹性导电层实现上像素电极与Micro LED的上电极的电性连接，可利用弹性导电层的弹性填补各个MicroLED之间的高度差，避免上像素电极与Micro LED的上电极的连接不良，提升Micro LED显示面板的对组效果和Micro LED显示面板的制程良率。本发明还提供一种Micro LED显示面板，能够提升Micro LED显示面板的对组效果，避免上像素电极与Micro LED的上电极的连接不良。\n\n[0052]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10624, 23678, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种直下式背光模组及其制作方法。\n\n背景技术\n\n[0002]随着显示技术的发展，液晶显示器(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]现有市场上的液晶显示装置大部分为背光型液晶显示装置，其包括液晶显示面板及背光模组(backlight module)。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，两片玻璃基板中间有许多垂直和水平的细小电线，通过通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。\n\n[0004]由于液晶显示面板本身不发光，需要借由背光模组提供的光源来正常显示影像，因此，背光模组成为液晶显示装置的关键组件之一。背光模组依照光源入射位置的不同分成侧入式背光模组与直下式背光模组两种。直下式背光模组是将背光源例如阴极萤光灯管(Cold Cathode Fluorescent Lamp，CCFL)或发光二极管(Light Emitting Diode，LED)光源设置在液晶显示面板后方，光线经扩散板均匀化后形成面光源提供给液晶显示面板。\n\n[0005]随着显示技术发展，窄边框和全面屏技术是目前热门的显示技术之一，现在显示屏的上边框和左右边框均可以压缩至极小，来满足现阶段全面屏的需求，但下边框由于需要邦定驱动芯片和设置侧入式背光模组，使得下边框难以进一步压缩无法满足全面屏的要求，尤其是下边框处需要设置侧入式背光模组，由于侧入式背光模组的出光前需要一定的混光距离进行充分的扩散，使得下边框的压缩难以取得有效突破，直下式背光模组直接设置在液晶显示面板的后方，具有窄边框的优势，在大尺寸显示领域得到广泛的应用，但是面临着厚度增加的问题。迷你发光二极管(Mini-LED)是一种尺寸在100微米左右的小型LED，将Mini-LED应用到背光模组中，能够在实现窄边框的同时，减少液晶显示装置的厚度增加。\n\n[0006]进一步地，与传统侧入式背光模组类似，采用Mini-LED的直下背光模组也需要采用增亮膜、反射片等结构以提升正面的亮度。目前最常使用的增亮膜的基本原理在于能够将部分大角度光线往中心区域收敛，而其余部分光线能够通过全反射重新进入导光板并得到重新回收利用。不同于侧入式背光的导光板回光系统，采用Mini-LED的直下背光模组无导光板设计，而是通过在驱动基板上涂覆白色反光油墨(即白油)方式进行回光，由于白油的反射特性使得反射光与入射光通常具有相同的角度，要么反射后重新进入增亮膜再次被全反射回来，要么被反射至驱动基板的低反射区(如Mini-LED表面、Mini-LED与白油之间的间隔区)被损耗，导致整体回光效率出现较大损失，出光效率不高。\n\n发明内容\n\n[0007]本发明的目的在于提供一种直下式背光模组，能够改善背光模组的光路结构，提升出光效率。\n\n[0008]本发明的目的还在于提供一种直下式背光模组的制作，制得的背光模组具有良好的光路结构和较高的出光效率。\n\n[0009]为实现上述目的，本发明提供了一种直下式背光模组，包括：驱动基板、设于所述驱动基板上的反射层、阵列排布于所述反射层上的多个Mini-LED、间隔分布于反射层上且位于各个Mini-LED之间的多个反射凸点以及设于所述Mini-LED、反射凸点以及反射层上的光学膜片组，所述多个Mini-LED与所述驱动基板电性连接。\n\n[0010]所述反射层包括层叠设置的多个介质层，所述多个介质层具有不同的折射率；所述反射凸点的材料为白色反光油墨。\n\n[0011]所述多个Mini-LED分别通过多个贯穿所述反射层的过孔与所述驱动基板电性连接。\n\n[0012]所述驱动基板为柔性电路板基板，所述驱动基板包括：保护层、设于所述保护层上的第一导电层、设于第一导电层上的间隔层以及设于所述间隔层上的第二导电层，所述多个Mini-LED分别通过多个贯穿所述反射层的过孔与所述第二导电层电性连接。\n\n[0013]所述光学膜片组包括：设于所述反射层、Mini-LED及反射凸点上的荧光膜片、设于所述荧光膜片上的扩散膜片及设于所述扩散膜片上的增亮膜片。\n\n[0014]本发明还提供一种直下式背光模组的制作方法，包括如下步骤：\n\n[0015]步骤S1、提供一驱动基板，在所述驱动基板上形成反射层；\n\n[0016]步骤S2、对所述反射层进行图案化制程，形成多个贯穿所述反射层的过孔；\n\n[0017]步骤S3、在所述反射层上形成阵列排布的多个Mini-LED，所述多个Mini-LED分别通过多个过孔与所述驱动基板电性连接；\n\n[0018]步骤S4、在所述反射层上各个Mini-LED之间的区域形成间隔分布的多个反射凸点；\n\n[0019]步骤S5、在所述Mini-LED、反射凸点以及反射层设置光学膜片组。\n\n[0020]所述反射层包括层叠设置的多个介质层，所述多个介质层具有不同的折射率；所述反射凸点的材料为白色反光油墨。\n\n[0021]所述步骤S1中采用涂布制程形成所述反射层，所述步骤S4中采用喷墨打印制程形成所述反射凸点。\n\n[0022]所述驱动基板为柔性电路板基板，所述驱动基板包括：保护层、设于所述保护层上的第一导电层、设于第一导电层上的间隔层以及设于所述间隔层上的第二导电层，所述多个Mini-LED分别通过多个过孔与所述第二导电层电性连接。\n\n[0023]所述光学膜片组包括：设于所述反射层、Mini-LED及反射凸点上的荧光膜片、设于所述荧光膜片上的扩散膜片及设于所述扩散膜片上的增亮膜片。\n\n[0024]本发明的有益效果：本发明提供了一种直下式背光模组，包括：驱动基板、设于所述驱动基板上的反射层、阵列排布于所述反射层上的多个Mini-LED、间隔分布于反射层上且位于各个Mini-LED之间的多个反射凸点以及设于所述Mini-LED、反射凸点以及反射层上的光学膜片组，所述多个Mini-LED与所述驱动基板电性连接，其通过在所述驱动基板上设置反射层，在所述反射层上设置多个反射凸点，利用所述多个反射凸点形成一光提取网点结构，通过所述光提取网点结构散射光线至不同的角度，提升背光模组的出光效率。本发明还提供一种直下式背光模组的制作，制得的背光模组具有良好的光路结构和较高的出光效率。\n\n附图说明\n\n[0025]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0026]附图中，\n\n[0027]图1为本发明的直下式背光模组的结构图；\n\n[0028]图2为本发明的直下式背光模组中驱动基板的结构图；\n\n[0029]图3为本发明的直下式背光模组的制作方法的流程图。\n\n具体实施方式\n\n[0030]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0031]请参阅图1，本发明提供一种直下式背光模组，包括：驱动基板10、设于所述驱动基板10上的反射层20、阵列排布于所述反射层20上的多个Mini-LED30、间隔分布于反射层20上且位于各个Mini-LED30之间的多个反射凸点40以及设于所述Mini-LED30、反射凸点40以及反射层20上的光学膜片组50，所述多个Mini-LED30与所述驱动基板10电性连接。\n\n[0032]具体地，所述多个Mini-LED30分别通过多个贯穿所述反射层20的过孔60与所述驱动基板10电性连接。\n\n[0033]具体地，所述反射层20包括层叠设置的多个介质层21，所述多个介质层21具有不同的折射率，通过所述多个介质层21的配合使得所述反射层20具有比传统的白色反光油墨更大的反射率，具体地，所述反射层20的反射率大于90％，更进一步地，所述反射层20的反射率大于99％。举例来说，在本发明的一些实施例中所述反射层20包括层叠设置的第一介质层和第二介质层，所述第一介质层和第二介质层具有不同的折射率，通过所述第一介质层和第二介质层的配合使得所述反射层20的反射率提升。\n\n[0034]优选地，所述反射凸点40的材料为白色反光油墨。\n\n[0035]需要说明的是，所述多个反射凸点40共同形成一光提取网点结构，当有光线通过所述光提取网点结构时，所述光线会被所述光提取网点结构向不同方向散射，具体到所述直下式背光模组中，当光学膜片组50向反射层20反射光线时，或所述反射层20向光学膜片组50反射光线时，所述光线会被所述光提取网点结构散射至不同的方向，提升直下式背光模组的出光效率。\n\n[0036]具体地，请参阅图2，在本发明的一些实施例中，所述驱动基板10为柔性电路板(Flexible Printed Circuit，FPC)基板，所述驱动基板10包括：保护层11、设于所述保护层11上的第一导电层12、设于第一导电层12上的间隔层13以及设于所述间隔层13上的第二导电层14，所述Mini-LED30分别通过多个贯穿所述反射层20的过孔60与所述第二导电层14电性连接。优选地，所述第一导电层12和第二导电层14的材料均为铜。\n\n[0037]当然，这并不是对本发明的限制，在本发明的其他实施例中，所述驱动基板10还可以为印刷电路板(Printed Circuit Board，PCB)基板。\n\n[0038]具体地，在本发明的一些实施例中，所述光学膜片组50包括：设于所述反射层20、Mini-LED30及反射凸点40上的荧光膜片51、设于所述荧光膜片51上的扩散膜片52及设于所述扩散膜片52上的增亮膜片53。优选地，所述荧光膜片51包括透明硅胶和荧光粉颗粒。\n\n[0039]当然，这并不是对本发明的限制，在本发明的其他实施例中，所述光学膜片组50还可以包括宽视角膜片等其他光学膜片。\n\n[0040]进一步地，所述Mini-LED30包括：电极层以及设于所述电极层上的发光层，所述电极层设于所述反射层20上并通过过孔60与驱动基板10的第二导电层14电性连接，所述电极层的材料可以为铜、银或铝，优选地，所述电极层的材料为具有更高反射率的银或铝。\n\n[0041]请参阅图3，本发明提供一种直下式背光模组的制作方法，包括如下步骤：\n\n[0042]步骤S1、提供一驱动基板10，在所述驱动基板10上形成反射层20。\n\n[0043]具体地，请参阅图2，在本发明的一些实施例中，所述驱动基板10为柔性电路板(Flexible Printed Circuit，FPC)基板，所述驱动基板10包括：保护层11、设于所述保护层11上的第一导电层12、设于第一导电层12上的间隔层13以及设于所述间隔层13上的第二导电层14。优选地，所述第一导电层12和第二导电层14的材料均为铜。\n\n[0044]当然，这并不是对本发明的限制，在本发明的其他实施例中，所述驱动基板10还可以为印刷电路板(Printed Circuit Board，PCB)基板。\n\n[0045]具体地，所述反射层20包括层叠设置的多个介质层21，所述多个介质层21具有不同的折射率，通过所述多个介质层21的配合使得所述反射层20具有比传统的白色反光油墨更大的反射率，具体地，所述反射层20的反射率大于90％，更进一步地，所述反射层20的反射率大于99％。举例来说，在本发明的一些实施例中所述反射层20包括层叠设置的第一介质层和第二介质层，所述第一介质层和第二介质层具有不同的折射率，通过所述第一介质层和第二介质层的配合使得所述反射层20的反射率提升。\n\n[0046]具体地，所述步骤S1中通过涂布制程形成所述反射层20。\n\n[0047]步骤S2、对所述反射层20进行图案化制程，形成多个贯穿所述反射层20的过孔60。\n\n[0048]步骤S3、在所述反射层20上形成阵列排布的多个Mini-LED30，所述多个Mini-LED30分别通过多个过孔60与所述驱动基板10电性连接。\n\n[0049]具体地，所述Mini-LED30分别通过多个贯穿所述反射层20的过孔60与所述第二导电层14电性连接。\n\n[0050]进一步地，所述Mini-LED30包括：电极层以及设于所述电极层上的发光层，所述电极层设于所述反射层20上并通过过孔60与驱动基板10的第二导电层14电性连接，所述电极层的材料可以为铜、银或铝，优选地，所述电极层的材料为具有更高反射率的银或铝。\n\n[0051]步骤S4、在所述反射层20上各个Mini-LED30之间的区域形成间隔分布的多个反射凸点40。\n\n[0052]具体地，所述步骤S4中通过喷墨打印制程形成所述多个反射凸点40。\n\n[0053]优选地，所述反射凸点40的材料为白色反光油墨。\n\n[0054]需要说明的是，所述多个反射凸点40共同形成一光提取网点结构，当有光线通过所述光提取网点结构时，所述光线会被所述光提取网点结构向不同方向散射，具体到所述直下式背光模组中，当光学膜片组50向反射层20反射光线时，或所述反射层20向光学膜片组50反射光线时，所述光线会被所述光提取网点结构散射至不同的方向，提升直下式背光模组的出光效率。\n\n[0055]步骤S5、在所述Mini-LED30、反射凸点40以及反射层20设置光学膜片组50。\n\n[0056]具体地，在本发明的一些实施例中，所述光学膜片组50包括：设于所述反射层20、Mini-LED30及反射凸点40上的荧光膜片51、设于所述荧光膜片51上的扩散膜片52及设于所述扩散膜片52上的增亮膜片53。优选地，所述荧光膜片51包括透明硅胶和荧光粉颗粒。\n\n[0057]当然，这并不是对本发明的限制，在本发明的其他实施例中，所述光学膜片组50还可以包括宽视角膜片等其他光学膜片。\n\n[0058]综上所述，本发明提供了一种直下式背光模组，包括：驱动基板、设于所述驱动基板上的反射层、阵列排布于所述反射层上的多个Mini-LED、间隔分布于反射层上且位于各个Mini-LED之间的多个反射凸点以及设于所述Mini-LED、反射凸点以及反射层上的光学膜片组，所述Mini-LED与所述驱动基板电性连接，其通过在所述驱动基板上设置反射层，在所述反射层上设置多个反射凸点，利用所述多个反射凸点形成一光提取网点结构，通过所述光提取网点结构散射光线至不同的角度，提升背光模组的出光效率。本发明还提供一种直下式背光模组的制作，制得的背光模组具有良好的光路结构和较高的出光效率。\n\n[0059]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种直下式背光模组及其制作方法。\n\n背景技术\n\n[0002]随着显示技术的发展，液晶显示器(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]现有市场上的液晶显示装置大部分为背光型液晶显示装置，其包括液晶显示面板及背光模组(backlight module)。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，两片玻璃基板中间有许多垂直和水平的细小电线，通过通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。\n\n[0004]由于液晶显示面板本身不发光，需要借由背光模组提供的光源来正常显示影像，因此，背光模组成为液晶显示装置的关键组件之一。背光模组依照光源入射位置的不同分成侧入式背光模组与直下式背光模组两种。直下式背光模组是将背光源例如阴极萤光灯管(Cold Cathode Fluorescent Lamp，CCFL)或发光二极管(Light Emitting Diode，LED)光源设置在液晶显示面板后方，光线经扩散板均匀化后形成面光源提供给液晶显示面板。\n\n[0005]随着显示技术发展，窄边框和全面屏技术是目前热门的显示技术之一，现在显示屏的上边框和左右边框均可以压缩至极小，来满足现阶段全面屏的需求，但下边框由于需要邦定驱动芯片和设置侧入式背光模组，使得下边框难以进一步压缩无法满足全面屏的要求，尤其是下边框处需要设置侧入式背光模组，由于侧入式背光模组的出光前需要一定的混光距离进行充分的扩散，使得下边框的压缩难以取得有效突破，直下式背光模组直接设置在液晶显示面板的后方，具有窄边框的优势，在大尺寸显示领域得到广泛的应用，但是面临着厚度增加的问题。迷你发光二极管(Mini-LED)是一种尺寸在100微米左右的小型LED，将Mini-LED应用到背光模组中，能够在实现窄边框的同时，减少液晶显示装置的厚度增加。\n\n[0006]进一步地，与传统侧入式背光模组类似，采用Mini-LED的直下背光模组也需要采用增亮膜、反射片等结构以提升正面的亮度。目前最常使用的增亮膜的基本原理在于能够将部分大角度光线往中心区域收敛，而其余部分光线能够通过全反射重新进入导光板并得到重新回收利用。不同于侧入式背光的导光板回光系统，采用Mini-LED的直下背光模组无导光板设计，而是通过在驱动基板上涂覆白色反光油墨(即白油)方式进行回光，由于白油的反射特性使得反射光与入射光通常具有相同的角度，要么反射后重新进入增亮膜再次被全反射回来，要么被反射至驱动基板的低反射区(如Mini-LED表面、Mini-LED与白油之间的间隔区)被损耗，导致整体回光效率出现较大损失，出光效率不高。\n\n发明内容\n\n[0007]本发明的目的在于提供一种直下式背光模组，能够改善背光模组的光路结构，提升出光效率。\n\n[0008]本发明的目的还在于提供一种直下式背光模组的制作，制得的背光模组具有良好的光路结构和较高的出光效率。\n\n[0009]为实现上述目的，本发明提供了一种直下式背光模组，包括：驱动基板、设于所述驱动基板上的反射层、阵列排布于所述反射层上的多个Mini-LED、间隔分布于反射层上且位于各个Mini-LED之间的多个反射凸点以及设于所述Mini-LED、反射凸点以及反射层上的光学膜片组，所述多个Mini-LED与所述驱动基板电性连接。\n\n[0010]所述反射层包括层叠设置的多个介质层，所述多个介质层具有不同的折射率；所述反射凸点的材料为白色反光油墨。\n\n[0011]所述多个Mini-LED分别通过多个贯穿所述反射层的过孔与所述驱动基板电性连接。\n\n[0012]所述驱动基板为柔性电路板基板，所述驱动基板包括：保护层、设于所述保护层上的第一导电层、设于第一导电层上的间隔层以及设于所述间隔层上的第二导电层，所述多个Mini-LED分别通过多个贯穿所述反射层的过孔与所述第二导电层电性连接。\n\n[0013]所述光学膜片组包括：设于所述反射层、Mini-LED及反射凸点上的荧光膜片、设于所述荧光膜片上的扩散膜片及设于所述扩散膜片上的增亮膜片。\n\n[0014]本发明还提供一种直下式背光模组的制作方法，包括如下步骤：\n\n[0015]步骤S1、提供一驱动基板，在所述驱动基板上形成反射层；\n\n[0016]步骤S2、对所述反射层进行图案化制程，形成多个贯穿所述反射层的过孔；\n\n[0017]步骤S3、在所述反射层上形成阵列排布的多个Mini-LED，所述多个Mini-LED分别通过多个过孔与所述驱动基板电性连接；\n\n[0018]步骤S4、在所述反射层上各个Mini-LED之间的区域形成间隔分布的多个反射凸点；\n\n[0019]步骤S5、在所述Mini-LED、反射凸点以及反射层设置光学膜片组。\n\n[0020]所述反射层包括层叠设置的多个介质层，所述多个介质层具有不同的折射率；所述反射凸点的材料为白色反光油墨。\n\n[0021]所述步骤S1中采用涂布制程形成所述反射层，所述步骤S4中采用喷墨打印制程形成所述反射凸点。\n\n[0022]所述驱动基板为柔性电路板基板，所述驱动基板包括：保护层、设于所述保护层上的第一导电层、设于第一导电层上的间隔层以及设于所述间隔层上的第二导电层，所述多个Mini-LED分别通过多个过孔与所述第二导电层电性连接。\n\n[0023]所述光学膜片组包括：设于所述反射层、Mini-LED及反射凸点上的荧光膜片、设于所述荧光膜片上的扩散膜片及设于所述扩散膜片上的增亮膜片。\n\n[0024]本发明的有益效果：本发明提供了一种直下式背光模组，包括：驱动基板、设于所述驱动基板上的反射层、阵列排布于所述反射层上的多个Mini-LED、间隔分布于反射层上且位于各个Mini-LED之间的多个反射凸点以及设于所述Mini-LED、反射凸点以及反射层上的光学膜片组，所述多个Mini-LED与所述驱动基板电性连接，其通过在所述驱动基板上设置反射层，在所述反射层上设置多个反射凸点，利用所述多个反射凸点形成一光提取网点结构，通过所述光提取网点结构散射光线至不同的角度，提升背光模组的出光效率。本发明还提供一种直下式背光模组的制作，制得的背光模组具有良好的光路结构和较高的出光效率。\n\n附图说明\n\n[0025]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0026]附图中，\n\n[0027]图1为本发明的直下式背光模组的结构图；\n\n[0028]图2为本发明的直下式背光模组中驱动基板的结构图；\n\n[0029]图3为本发明的直下式背光模组的制作方法的流程图。\n\n具体实施方式\n\n[0030]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0031]请参阅图1，本发明提供一种直下式背光模组，包括：驱动基板10、设于所述驱动基板10上的反射层20、阵列排布于所述反射层20上的多个Mini-LED30、间隔分布于反射层20上且位于各个Mini-LED30之间的多个反射凸点40以及设于所述Mini-LED30、反射凸点40以及反射层20上的光学膜片组50，所述多个Mini-LED30与所述驱动基板10电性连接。\n\n[0032]具体地，所述多个Mini-LED30分别通过多个贯穿所述反射层20的过孔60与所述驱动基板10电性连接。\n\n[0033]具体地，所述反射层20包括层叠设置的多个介质层21，所述多个介质层21具有不同的折射率，通过所述多个介质层21的配合使得所述反射层20具有比传统的白色反光油墨更大的反射率，具体地，所述反射层20的反射率大于90％，更进一步地，所述反射层20的反射率大于99％。举例来说，在本发明的一些实施例中所述反射层20包括层叠设置的第一介质层和第二介质层，所述第一介质层和第二介质层具有不同的折射率，通过所述第一介质层和第二介质层的配合使得所述反射层20的反射率提升。\n\n[0034]优选地，所述反射凸点40的材料为白色反光油墨。\n\n[0035]需要说明的是，所述多个反射凸点40共同形成一光提取网点结构，当有光线通过所述光提取网点结构时，所述光线会被所述光提取网点结构向不同方向散射，具体到所述直下式背光模组中，当光学膜片组50向反射层20反射光线时，或所述反射层20向光学膜片组50反射光线时，所述光线会被所述光提取网点结构散射至不同的方向，提升直下式背光模组的出光效率。\n\n[0036]具体地，请参阅图2，在本发明的一些实施例中，所述驱动基板10为柔性电路板(Flexible Printed Circuit，FPC)基板，所述驱动基板10包括：保护层11、设于所述保护层11上的第一导电层12、设于第一导电层12上的间隔层13以及设于所述间隔层13上的第二导电层14，所述Mini-LED30分别通过多个贯穿所述反射层20的过孔60与所述第二导电层14电性连接。优选地，所述第一导电层12和第二导电层14的材料均为铜。\n\n[0037]当然，这并不是对本发明的限制，在本发明的其他实施例中，所述驱动基板10还可以为印刷电路板(Printed Circuit Board，PCB)基板。\n\n[0038]具体地，在本发明的一些实施例中，所述光学膜片组50包括：设于所述反射层20、Mini-LED30及反射凸点40上的荧光膜片51、设于所述荧光膜片51上的扩散膜片52及设于所述扩散膜片52上的增亮膜片53。优选地，所述荧光膜片51包括透明硅胶和荧光粉颗粒。\n\n[0039]当然，这并不是对本发明的限制，在本发明的其他实施例中，所述光学膜片组50还可以包括宽视角膜片等其他光学膜片。\n\n[0040]进一步地，所述Mini-LED30包括：电极层以及设于所述电极层上的发光层，所述电极层设于所述反射层20上并通过过孔60与驱动基板10的第二导电层14电性连接，所述电极层的材料可以为铜、银或铝，优选地，所述电极层的材料为具有更高反射率的银或铝。\n\n[0041]请参阅图3，本发明提供一种直下式背光模组的制作方法，包括如下步骤：\n\n[0042]步骤S1、提供一驱动基板10，在所述驱动基板10上形成反射层20。\n\n[0043]具体地，请参阅图2，在本发明的一些实施例中，所述驱动基板10为柔性电路板(Flexible Printed Circuit，FPC)基板，所述驱动基板10包括：保护层11、设于所述保护层11上的第一导电层12、设于第一导电层12上的间隔层13以及设于所述间隔层13上的第二导电层14。优选地，所述第一导电层12和第二导电层14的材料均为铜。\n\n[0044]当然，这并不是对本发明的限制，在本发明的其他实施例中，所述驱动基板10还可以为印刷电路板(Printed Circuit Board，PCB)基板。\n\n[0045]具体地，所述反射层20包括层叠设置的多个介质层21，所述多个介质层21具有不同的折射率，通过所述多个介质层21的配合使得所述反射层20具有比传统的白色反光油墨更大的反射率，具体地，所述反射层20的反射率大于90％，更进一步地，所述反射层20的反射率大于99％。举例来说，在本发明的一些实施例中所述反射层20包括层叠设置的第一介质层和第二介质层，所述第一介质层和第二介质层具有不同的折射率，通过所述第一介质层和第二介质层的配合使得所述反射层20的反射率提升。\n\n[0046]具体地，所述步骤S1中通过涂布制程形成所述反射层20。\n\n[0047]步骤S2、对所述反射层20进行图案化制程，形成多个贯穿所述反射层20的过孔60。\n\n[0048]步骤S3、在所述反射层20上形成阵列排布的多个Mini-LED30，所述多个Mini-LED30分别通过多个过孔60与所述驱动基板10电性连接。\n\n[0049]具体地，所述Mini-LED30分别通过多个贯穿所述反射层20的过孔60与所述第二导电层14电性连接。\n\n[0050]进一步地，所述Mini-LED30包括：电极层以及设于所述电极层上的发光层，所述电极层设于所述反射层20上并通过过孔60与驱动基板10的第二导电层14电性连接，所述电极层的材料可以为铜、银或铝，优选地，所述电极层的材料为具有更高反射率的银或铝。\n\n[0051]步骤S4、在所述反射层20上各个Mini-LED30之间的区域形成间隔分布的多个反射凸点40。\n\n[0052]具体地，所述步骤S4中通过喷墨打印制程形成所述多个反射凸点40。\n\n[0053]优选地，所述反射凸点40的材料为白色反光油墨。\n\n[0054]需要说明的是，所述多个反射凸点40共同形成一光提取网点结构，当有光线通过所述光提取网点结构时，所述光线会被所述光提取网点结构向不同方向散射，具体到所述直下式背光模组中，当光学膜片组50向反射层20反射光线时，或所述反射层20向光学膜片组50反射光线时，所述光线会被所述光提取网点结构散射至不同的方向，提升直下式背光模组的出光效率。\n\n[0055]步骤S5、在所述Mini-LED30、反射凸点40以及反射层20设置光学膜片组50。\n\n[0056]具体地，在本发明的一些实施例中，所述光学膜片组50包括：设于所述反射层20、Mini-LED30及反射凸点40上的荧光膜片51、设于所述荧光膜片51上的扩散膜片52及设于所述扩散膜片52上的增亮膜片53。优选地，所述荧光膜片51包括透明硅胶和荧光粉颗粒。\n\n[0057]当然，这并不是对本发明的限制，在本发明的其他实施例中，所述光学膜片组50还可以包括宽视角膜片等其他光学膜片。\n\n[0058]综上所述，本发明提供了一种直下式背光模组，包括：驱动基板、设于所述驱动基板上的反射层、阵列排布于所述反射层上的多个Mini-LED、间隔分布于反射层上且位于各个Mini-LED之间的多个反射凸点以及设于所述Mini-LED、反射凸点以及反射层上的光学膜片组，所述Mini-LED与所述驱动基板电性连接，其通过在所述驱动基板上设置反射层，在所述反射层上设置多个反射凸点，利用所述多个反射凸点形成一光提取网点结构，通过所述光提取网点结构散射光线至不同的角度，提升背光模组的出光效率。本发明还提供一种直下式背光模组的制作，制得的背光模组具有良好的光路结构和较高的出光效率。\n\n[0059]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10625, 23679, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种Micro LED显示面板的制作方法。\n\n背景技术\n\n[0002]随着可穿戴显示设备的快速发展，出现了微发光二极管(Micro LED，uLED)技术。Micro LED技术即LED微缩化和矩阵化技术，指的是在一个芯片上集成的高密度微小尺寸的LED阵列。Micro LED的耗电量远小于液晶显示器(Liquid Crystal Display，LCD)，与有机发光二极管(Organic Light-Emitting Diode，OLED)一样属于自发光，能够将像素之间的距离从毫米等级降至微米等级，色彩饱和度接近OLED，所以很多厂商把Micro LED视为下一代的显示技术。\n\n[0003]现有技术通过微转印(Micro Transfer Print)法来制作Micro LED阵列：将LED裸芯片(Bare Chip)通过激光剥离(Laser Lift-off，LLO)技术从蓝宝石衬底上分离开后，使用一个图案化的转移基板(Transfer Layer)将LED裸芯片从供给基板吸附起来，转移到接收基板。具体地，这个接收基板是已经预先制备完成电路图案的硅基板，通过将转移基板与接收基板进行对位，转移基板上所吸附的LED裸芯片被贴附到接收基板的匹配位置，再剥离转移基板，即可完成LED裸芯片的转移。诸如US2013/0210194，US2013/0128585等专利对微转印技术有较为细致地描述。\n\n[0004]现有技术中的Micro LED的尺寸大小远小于现有的像素尺寸。例如，现有的55寸的全高清显示面板中，其子像素的长宽分别约为在600μm和200μm，而Micro LED的尺寸约为10～50μm左右，这就导致Micro LED的周围有较大区域是不发光的。由于Micro LED发出的光是向各个方向的，因此会有较多的光能损耗在非显示方向上，光源的利用率较低。为了解决上述问题，现有技术提出了一种在基板上制作凹槽结构，并将Micro LED置于凹槽中，利用凹槽的提升Micro LED的光线利用率的技术方案，并且现有技术采用的是刻蚀的方法在基板上形成凹槽，但由于目前多数Micro LED的高度在5～10μm，直接在基板上刻蚀出大于5μm的凹槽在实际操作时制程难度很大。\n\n发明内容\n\n[0005]本发明的目的在于提供一种Micro LED显示面板的制作方法，制作方法简便，可操作性高，且制得的Micro LED显示面板的出光效率高。\n\n[0006]为实现上述目的，本发明提供了一种Micro LED显示面板的制作方法，包括如下步骤：\n\n[0007]步骤S1、提供一驱动基板，在驱动基板上形成光刻胶层；\n\n[0008]步骤S2、对所述光刻胶层进行图案化处理，形成阵列排布的多个容置槽；\n\n[0009]步骤S3、在所述各个容置槽内设置Micro LED。\n\n[0010]所述容置槽的坡度角小于60°。\n\n[0011]所述光刻胶层的材料为树脂材料、亚克力材料或硅氧烷材料。\n\n[0012]可选地，所述步骤S3中设置的Micro LED为垂直结构的Micro LED；\n\n[0013]所述步骤S1中在形成所述光刻胶层之前还包括：在所述驱动基板上形成多个第一像素电极的步骤；\n\n[0014]所述步骤S2中形成的每一个容置槽均对应暴露出一第一像素电极；\n\n[0015]所述步骤S3中Mirco LED设置于所述容置槽后，所述Micro LED的第一电极与所述第一像素电极电性连接；\n\n[0016]所述Micro LED显示面板的制作方法在所述步骤S3之后还包括以下步骤：\n\n[0017]在所述光刻胶层、第一像素电极及所述Micro LED上形成一层钝化层；\n\n[0018]对所述钝化层进行图案化处理，形成暴露出所述Micro LED的多个过孔；\n\n[0019]在所述钝化层上形成阵列排布的多个第二像素电极，每一个第二像素电极均通过一过孔与其对应的Micro LED的第二电极电性连接；\n\n[0020]在所述第二像素电极及钝化层上形成保护层。\n\n[0021]可选地，所述步骤S3中设置的Micro LED为垂直结构的Micro LED；\n\n[0022]所述步骤S2和步骤S3之间还包括：在各个容置槽的表面形成第一像素电极的步骤，所述步骤S3中Mirco LED设置于所述容置槽后，所述Micro LED的第一电极与所述第一像素电极电性连接；\n\n[0023]所述Micro LED显示面板的制作方法在所述步骤S3之后还包括以下步骤：\n\n[0024]在所述光刻胶层、第一像素电极及所述Micro LED上形成一层钝化层；\n\n[0025]对所述钝化层进行图案化处理，形成暴露出所述Micro LED的多个过孔；\n\n[0026]在所述钝化层上形成阵列排布的多个第二像素电极，每一个第二像素电极均通过一过孔与其对应的Micro LED的第二电极电性连接；\n\n[0027]在所述第二像素电极及钝化层上形成保护层。\n\n[0028]所述步骤S3中设置的Micro LED为水平结构的Micro LED，所述步骤S1中在形成所述光刻胶层之前还包括：在所述驱动基板上形成多个第一像素电极的步骤，每一个第一像素电极均包括间隔设置的第一连接端子和第二连接端子；\n\n[0029]所述步骤S2中形成的每一个容置槽均对应暴露出一第一像素电极；\n\n[0030]所述步骤S3中Mirco LED设置于所述容置槽后，所述Micro LED的第一电极和第二电极分别与所述第一连接端子和第二连接端子电性连接；\n\n[0031]在所述步骤S3之后还包括以下步骤：在所述光刻胶层、第一像素电极及所述MicroLED上形成一层保护层。\n\n[0032]所述步骤S3中设置的Micro LED为水平结构的Micro LED，所述步骤S2和步骤S3之间还包括：在各个容置槽的表面形成多个第一像素电极，每一个第一像素电极均包括间隔设置的第一连接端子和第二连接端子；\n\n[0033]所述步骤S3中Mirco LED设置于所述容置槽后，所述Micro LED的第一电极和第二电极分别与所述第一连接端子和第二连接端子电性连接；\n\n[0034]在所述步骤S3之后还包括以下步骤：在所述光刻胶层、第一像素电极及所述MicroLED上形成一层保护层。\n\n[0035]所述形成所述第二像素电极的步骤和形成所述保护层的步骤之间还包括：在所述Micro LED上方的第二像素电极上形成光转换层的步骤。\n\n[0036]在形成所述保护层之后还包括以下步骤：\n\n[0037]在所述保护层上形成贴合层，在所述贴合层上设置封装基板。\n\n[0038]所述步骤S2中通过曝光及显影制程对所述光刻胶层进行图案化处理；\n\n[0039]所述容置槽的深度大于5μm。\n\n[0040]本发明的有益效果：本发明的Micro LED显示面板的制作方法通过图案化光刻胶层制作容置Micro LED的容置槽，能够降低制程难度，提升Micro LED的出光效率。\n\n附图说明\n\n[0041]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0042]附图中，\n\n[0043]图1至图8为本发明的Micro LED显示面板的制作方法的第一实施例的示意图；\n\n[0044]图9至16为本发明的Micro LED显示面板的制作方法的第二实施例的示意图；\n\n[0045]图17至21为本发明的Micro LED显示面板的制作方法的第三实施例的示意图；\n\n[0046]图22至26为本发明的Micro LED显示面板的制作方法的第四实施例的示意图；\n\n[0047]图27为本发明的Micro LED显示面板的制作方法的流程图。\n\n具体实施方式\n\n[0048]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0049]请参阅图27，本发明提供一种Micro LED显示面板的制作方法，包括如下步骤：\n\n[0050]步骤S1、提供一驱动基板10，在驱动基板10上形成光刻胶层30；\n\n[0051]步骤S2、对所述光刻胶层30进行图案化处理，形成阵列排布的多个容置槽40；\n\n[0052]步骤S3、在所述各个容置槽40内设置Micro LED50。\n\n[0053]具体地，为了保证所述容置槽40的光提取效果，本发明优选设置所述容置槽40的坡度(Taper)角小于60°，容置槽40的坡度角越小光提取效果越好，但考虑到像素的尺寸，容置槽40的坡度角也不宜极限缩小。\n\n[0054]具体地，本发明通过曝光及显影制程对所述光刻胶层30进行图案化处理，可以很容易的制得深度大于5μm的容置槽40，相比现有技术采用的刻蚀基板的方法，本发明通过在光刻胶层上曝光及显影制程制作容置槽，能够降低制程难度，提升Micro LED的出光效率。\n\n[0055]优选地，所述光刻胶层30的材料为树脂材料、亚克力材料或硅氧烷材料。\n\n[0056]具体地，所述Micro LED50按照结构不同，可分为垂直结构的Micro LED和水平结构的Micro LED，垂直结构的Micro LED的第一电极和第二电极分别位于Micro LED的上下两侧，水平的结构的Micro LED的第一电极和第二电极均位于Micro LED的下侧。\n\n[0057]具体实施时，如图1至图8所示，在本发明的第一实施例中，所述步骤S3中设置的Micro LED为垂直结构的Micro LED。\n\n[0058]该第一实施例具体包括如下步骤：\n\n[0059]如图1所示，首先，在所述驱动基板10上形成多个第一像素电极20a；\n\n[0060]如图2所示，接着，在所述驱动基板10及第一像素电极20a上形成并图案化光刻胶层30，形成阵列排布的多个容置槽40，每一个容置槽40均对应暴露出一第一像素电极20a；\n\n[0061]如图3所示，然后，在所述各个容置槽40内设置Micro LED50，所述Micro LED50的第一电极与所述第一像素电极20a电性连接；\n\n[0062]如图4所示，接着，在所述光刻胶层30、第一像素电极20a及所述Micro LED50上形成一层钝化层60；\n\n[0063]接着，对所述钝化层60进行图案化处理，形成暴露出所述Micro LED50的多个过孔70；\n\n[0064]如图5所示，在所述钝化层60上形成阵列排布的多个第二像素电极80，每一个第二像素电极80均通过一过孔70与其对应的Micro LED50的第二电极电性连接；\n\n[0065]如图6所示，在所述Micro LED50上方的第二像素电极80上形成光转换层100。\n\n[0066]如图7所示，在所述第二像素电极80及钝化层60上形成保护层90。\n\n[0067]如图8所示，在所述保护层90上形成贴合层110，在所述贴合层110上设置封装基板120。\n\n[0068]具体实施时，如图9至图16所示，在本发明的第二实施例中，所述步骤S3中设置的Micro LED为垂直结构的Micro LED。\n\n[0069]该第二实施例具体包括如下步骤：\n\n[0070]如图9所示，提供一驱动基板10，在驱动基板10上形成光刻胶层30，对所述光刻胶层30进行图案化处理，形成阵列排布的多个容置槽40；\n\n[0071]如图10所示，在各个容置槽40的表面形成第一像素电极20b；\n\n[0072]如图11所示，在所述容置槽40内设置Micro LED50，所述Micro LED50的第一电极与所述第一像素电极20b电性连接；\n\n[0073]如图12所示，在所述光刻胶层30、第一像素电极20b及所述Micro LED50上形成一层钝化层60；\n\n[0074]对所述钝化层60进行图案化处理，形成暴露出所述Micro LED50的多个过孔70；\n\n[0075]如图13所示，在所述钝化层60上形成阵列排布的多个第二像素电极80，每一个第二像素电极80均通过一过孔70与其对应的Micro LED50的第二电极电性连接；\n\n[0076]如图14所示，在所述Micro LED50上方的第二像素电极80上形成光转换层100。\n\n[0077]如图15所示，在所述第二像素电极80及钝化层60上形成保护层90；\n\n[0078]如图16所示，在所述保护层90上形成贴合层110，在所述贴合层110上设置封装基板120。\n\n[0079]需要说明的是，在本发明的第一和第二实施例中，所述光转换层100可根据需要选择形成或不形成，当所述光转换层100不形成时，所述保护层90相应填充所述光转换层100所在的区域即可，所述光转换层100可通过光刻制程或喷墨打印制程形成，且其对应位于所述过孔70内的第二像素电极80上，也即位于所述由所述过孔70产生的凹槽内。\n\n[0080]值得一提的是，由于将第一像素电极20b在光刻胶层30的附着性较差，且需要斜坡连接至所述容置槽40的底部，容易在斜坡与平面的交汇处反射断裂，因此，本发明的所述第一实施例与第二实施例相比，具有更好的制程稳定性。然而，在容置槽40的斜坡上形成第一像素电极20b，虽然制程稳定性不足，但却可以增强容置槽40的反光，进一步提升容置槽40的光提取效果，因此本发明的第二实施例与第一实施例相比，又具有更好的出光效率。\n\n[0081]具体实施时，如图17至图21所示，在本发明的第三实施例中，所述步骤S3中设置的Micro LED50为水平结构的Micro LED；\n\n[0082]该第三实施例具体包括如下步骤：\n\n[0083]如图17所示，在所述驱动基板10上形成多个第一像素电极20c，每一个第一像素电极20c均包括间隔设置的第一连接端子21c和第二连接端子22c；\n\n[0084]如图18所示，在所述驱动基板10及第一像素电极20c上形成光刻胶层30，并图案化所述光刻胶层30，得到阵列排布的多个容置槽40，每一个容置槽40均对应暴露出一第一像素电极20c；\n\n[0085]如图19所示，在所述容置槽40内设置Micro LED50，所述Micro LED50的第一电极和第二电极分别与所述第一连接端子21c和第二连接端子22c电性连接；\n\n[0086]如图20所示，在所述光刻胶层30、第一像素电极20c及所述Micro LED50上形成一层保护层90；\n\n[0087]如图21所示，在所述保护层90上形成贴合层110，在所述贴合层110设置封装基板120。\n\n[0088]具体实施时，如图22至图26所示，在本发明的第四实施例中，所述步骤S3中设置的Micro LED50为水平结构的Micro LED；\n\n[0089]该第四实施例具体包括如下步骤：\n\n[0090]如图22所示，在所述驱动基板10上形成光刻胶层30，并图案化所述光刻胶层30，得到阵列排布的多个容置槽40；\n\n[0091]如图23所示，在各个容置槽40的表面形成多个第一像素电极20d，每一个第一像素电极20d均包括间隔设置的第一连接端子21d和第二连接端子22d；\n\n[0092]如图24所示，在所述容置槽40内设置Micro LED50，所述Micro LED50的第一电极和第二电极分别与所述第一连接端子21d和第二连接端子22d电性连接；\n\n[0093]如图25所示，在所述光刻胶层30、第一像素电极20d及所述Micro LED50上形成一层保护层90；\n\n[0094]如图26所示，在所述保护层90上形成贴合层110，在所述贴合层110设置封装基板120。\n\n[0095]需要说明的是，由于将第一像素电极在光刻胶层30的附着性较差，且需要斜坡连接至所述容置槽40的底部，容易在斜坡与平面的交汇处反射断裂，因此，本发明的所述第三实施例与第四实施例相比，具有更好的制程稳定性。然而，在容置槽40的斜坡上形成第一像素电极，虽然制程稳定性不足，但却可以增强容置槽40的反光，进一步提升容置槽40的光提取效果，因此本发明的第四实施例与第三实施例相比，又具有更好的出光效率。\n\n[0096]优选地，在本发明的第一至第四实施例中，所述保护层90的材料为氧化硅、氮化硅、或其他有机绝缘介质，所述贴合层110为粘胶或能够固化的树脂材料，所述固化的方式可以为热固化或光固化。\n\n[0097]综上所述，本发明的Micro LED显示面板的制作方法包括如下步骤：步骤S1、提供一驱动基板，在驱动基板上形成光刻胶层；步骤S2、对所述光刻胶层进行图案化处理，形成阵列排布的多个容置槽；步骤S3、在所述各个容置槽内设置Micro LED；通过图案化光刻胶层制作容置Micro LED的容置槽，能够降低制程难度，提升Micro LED的出光效率。\n\n[0098]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种Micro LED显示面板的制作方法。\n\n背景技术\n\n[0002]随着可穿戴显示设备的快速发展，出现了微发光二极管(Micro LED，uLED)技术。Micro LED技术即LED微缩化和矩阵化技术，指的是在一个芯片上集成的高密度微小尺寸的LED阵列。Micro LED的耗电量远小于液晶显示器(Liquid Crystal Display，LCD)，与有机发光二极管(Organic Light-Emitting Diode，OLED)一样属于自发光，能够将像素之间的距离从毫米等级降至微米等级，色彩饱和度接近OLED，所以很多厂商把Micro LED视为下一代的显示技术。\n\n[0003]现有技术通过微转印(Micro Transfer Print)法来制作Micro LED阵列：将LED裸芯片(Bare Chip)通过激光剥离(Laser Lift-off，LLO)技术从蓝宝石衬底上分离开后，使用一个图案化的转移基板(Transfer Layer)将LED裸芯片从供给基板吸附起来，转移到接收基板。具体地，这个接收基板是已经预先制备完成电路图案的硅基板，通过将转移基板与接收基板进行对位，转移基板上所吸附的LED裸芯片被贴附到接收基板的匹配位置，再剥离转移基板，即可完成LED裸芯片的转移。诸如US2013/0210194，US2013/0128585等专利对微转印技术有较为细致地描述。\n\n[0004]现有技术中的Micro LED的尺寸大小远小于现有的像素尺寸。例如，现有的55寸的全高清显示面板中，其子像素的长宽分别约为在600μm和200μm，而Micro LED的尺寸约为10～50μm左右，这就导致Micro LED的周围有较大区域是不发光的。由于Micro LED发出的光是向各个方向的，因此会有较多的光能损耗在非显示方向上，光源的利用率较低。为了解决上述问题，现有技术提出了一种在基板上制作凹槽结构，并将Micro LED置于凹槽中，利用凹槽的提升Micro LED的光线利用率的技术方案，并且现有技术采用的是刻蚀的方法在基板上形成凹槽，但由于目前多数Micro LED的高度在5～10μm，直接在基板上刻蚀出大于5μm的凹槽在实际操作时制程难度很大。\n\n发明内容\n\n[0005]本发明的目的在于提供一种Micro LED显示面板的制作方法，制作方法简便，可操作性高，且制得的Micro LED显示面板的出光效率高。\n\n[0006]为实现上述目的，本发明提供了一种Micro LED显示面板的制作方法，包括如下步骤：\n\n[0007]步骤S1、提供一驱动基板，在驱动基板上形成光刻胶层；\n\n[0008]步骤S2、对所述光刻胶层进行图案化处理，形成阵列排布的多个容置槽；\n\n[0009]步骤S3、在所述各个容置槽内设置Micro LED。\n\n[0010]所述容置槽的坡度角小于60°。\n\n[0011]所述光刻胶层的材料为树脂材料、亚克力材料或硅氧烷材料。\n\n[0012]可选地，所述步骤S3中设置的Micro LED为垂直结构的Micro LED；\n\n[0013]所述步骤S1中在形成所述光刻胶层之前还包括：在所述驱动基板上形成多个第一像素电极的步骤；\n\n[0014]所述步骤S2中形成的每一个容置槽均对应暴露出一第一像素电极；\n\n[0015]所述步骤S3中Mirco LED设置于所述容置槽后，所述Micro LED的第一电极与所述第一像素电极电性连接；\n\n[0016]所述Micro LED显示面板的制作方法在所述步骤S3之后还包括以下步骤：\n\n[0017]在所述光刻胶层、第一像素电极及所述Micro LED上形成一层钝化层；\n\n[0018]对所述钝化层进行图案化处理，形成暴露出所述Micro LED的多个过孔；\n\n[0019]在所述钝化层上形成阵列排布的多个第二像素电极，每一个第二像素电极均通过一过孔与其对应的Micro LED的第二电极电性连接；\n\n[0020]在所述第二像素电极及钝化层上形成保护层。\n\n[0021]可选地，所述步骤S3中设置的Micro LED为垂直结构的Micro LED；\n\n[0022]所述步骤S2和步骤S3之间还包括：在各个容置槽的表面形成第一像素电极的步骤，所述步骤S3中Mirco LED设置于所述容置槽后，所述Micro LED的第一电极与所述第一像素电极电性连接；\n\n[0023]所述Micro LED显示面板的制作方法在所述步骤S3之后还包括以下步骤：\n\n[0024]在所述光刻胶层、第一像素电极及所述Micro LED上形成一层钝化层；\n\n[0025]对所述钝化层进行图案化处理，形成暴露出所述Micro LED的多个过孔；\n\n[0026]在所述钝化层上形成阵列排布的多个第二像素电极，每一个第二像素电极均通过一过孔与其对应的Micro LED的第二电极电性连接；\n\n[0027]在所述第二像素电极及钝化层上形成保护层。\n\n[0028]所述步骤S3中设置的Micro LED为水平结构的Micro LED，所述步骤S1中在形成所述光刻胶层之前还包括：在所述驱动基板上形成多个第一像素电极的步骤，每一个第一像素电极均包括间隔设置的第一连接端子和第二连接端子；\n\n[0029]所述步骤S2中形成的每一个容置槽均对应暴露出一第一像素电极；\n\n[0030]所述步骤S3中Mirco LED设置于所述容置槽后，所述Micro LED的第一电极和第二电极分别与所述第一连接端子和第二连接端子电性连接；\n\n[0031]在所述步骤S3之后还包括以下步骤：在所述光刻胶层、第一像素电极及所述MicroLED上形成一层保护层。\n\n[0032]所述步骤S3中设置的Micro LED为水平结构的Micro LED，所述步骤S2和步骤S3之间还包括：在各个容置槽的表面形成多个第一像素电极，每一个第一像素电极均包括间隔设置的第一连接端子和第二连接端子；\n\n[0033]所述步骤S3中Mirco LED设置于所述容置槽后，所述Micro LED的第一电极和第二电极分别与所述第一连接端子和第二连接端子电性连接；\n\n[0034]在所述步骤S3之后还包括以下步骤：在所述光刻胶层、第一像素电极及所述MicroLED上形成一层保护层。\n\n[0035]所述形成所述第二像素电极的步骤和形成所述保护层的步骤之间还包括：在所述Micro LED上方的第二像素电极上形成光转换层的步骤。\n\n[0036]在形成所述保护层之后还包括以下步骤：\n\n[0037]在所述保护层上形成贴合层，在所述贴合层上设置封装基板。\n\n[0038]所述步骤S2中通过曝光及显影制程对所述光刻胶层进行图案化处理；\n\n[0039]所述容置槽的深度大于5μm。\n\n[0040]本发明的有益效果：本发明的Micro LED显示面板的制作方法通过图案化光刻胶层制作容置Micro LED的容置槽，能够降低制程难度，提升Micro LED的出光效率。\n\n附图说明\n\n[0041]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0042]附图中，\n\n[0043]图1至图8为本发明的Micro LED显示面板的制作方法的第一实施例的示意图；\n\n[0044]图9至16为本发明的Micro LED显示面板的制作方法的第二实施例的示意图；\n\n[0045]图17至21为本发明的Micro LED显示面板的制作方法的第三实施例的示意图；\n\n[0046]图22至26为本发明的Micro LED显示面板的制作方法的第四实施例的示意图；\n\n[0047]图27为本发明的Micro LED显示面板的制作方法的流程图。\n\n具体实施方式\n\n[0048]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0049]请参阅图27，本发明提供一种Micro LED显示面板的制作方法，包括如下步骤：\n\n[0050]步骤S1、提供一驱动基板10，在驱动基板10上形成光刻胶层30；\n\n[0051]步骤S2、对所述光刻胶层30进行图案化处理，形成阵列排布的多个容置槽40；\n\n[0052]步骤S3、在所述各个容置槽40内设置Micro LED50。\n\n[0053]具体地，为了保证所述容置槽40的光提取效果，本发明优选设置所述容置槽40的坡度(Taper)角小于60°，容置槽40的坡度角越小光提取效果越好，但考虑到像素的尺寸，容置槽40的坡度角也不宜极限缩小。\n\n[0054]具体地，本发明通过曝光及显影制程对所述光刻胶层30进行图案化处理，可以很容易的制得深度大于5μm的容置槽40，相比现有技术采用的刻蚀基板的方法，本发明通过在光刻胶层上曝光及显影制程制作容置槽，能够降低制程难度，提升Micro LED的出光效率。\n\n[0055]优选地，所述光刻胶层30的材料为树脂材料、亚克力材料或硅氧烷材料。\n\n[0056]具体地，所述Micro LED50按照结构不同，可分为垂直结构的Micro LED和水平结构的Micro LED，垂直结构的Micro LED的第一电极和第二电极分别位于Micro LED的上下两侧，水平的结构的Micro LED的第一电极和第二电极均位于Micro LED的下侧。\n\n[0057]具体实施时，如图1至图8所示，在本发明的第一实施例中，所述步骤S3中设置的Micro LED为垂直结构的Micro LED。\n\n[0058]该第一实施例具体包括如下步骤：\n\n[0059]如图1所示，首先，在所述驱动基板10上形成多个第一像素电极20a；\n\n[0060]如图2所示，接着，在所述驱动基板10及第一像素电极20a上形成并图案化光刻胶层30，形成阵列排布的多个容置槽40，每一个容置槽40均对应暴露出一第一像素电极20a；\n\n[0061]如图3所示，然后，在所述各个容置槽40内设置Micro LED50，所述Micro LED50的第一电极与所述第一像素电极20a电性连接；\n\n[0062]如图4所示，接着，在所述光刻胶层30、第一像素电极20a及所述Micro LED50上形成一层钝化层60；\n\n[0063]接着，对所述钝化层60进行图案化处理，形成暴露出所述Micro LED50的多个过孔70；\n\n[0064]如图5所示，在所述钝化层60上形成阵列排布的多个第二像素电极80，每一个第二像素电极80均通过一过孔70与其对应的Micro LED50的第二电极电性连接；\n\n[0065]如图6所示，在所述Micro LED50上方的第二像素电极80上形成光转换层100。\n\n[0066]如图7所示，在所述第二像素电极80及钝化层60上形成保护层90。\n\n[0067]如图8所示，在所述保护层90上形成贴合层110，在所述贴合层110上设置封装基板120。\n\n[0068]具体实施时，如图9至图16所示，在本发明的第二实施例中，所述步骤S3中设置的Micro LED为垂直结构的Micro LED。\n\n[0069]该第二实施例具体包括如下步骤：\n\n[0070]如图9所示，提供一驱动基板10，在驱动基板10上形成光刻胶层30，对所述光刻胶层30进行图案化处理，形成阵列排布的多个容置槽40；\n\n[0071]如图10所示，在各个容置槽40的表面形成第一像素电极20b；\n\n[0072]如图11所示，在所述容置槽40内设置Micro LED50，所述Micro LED50的第一电极与所述第一像素电极20b电性连接；\n\n[0073]如图12所示，在所述光刻胶层30、第一像素电极20b及所述Micro LED50上形成一层钝化层60；\n\n[0074]对所述钝化层60进行图案化处理，形成暴露出所述Micro LED50的多个过孔70；\n\n[0075]如图13所示，在所述钝化层60上形成阵列排布的多个第二像素电极80，每一个第二像素电极80均通过一过孔70与其对应的Micro LED50的第二电极电性连接；\n\n[0076]如图14所示，在所述Micro LED50上方的第二像素电极80上形成光转换层100。\n\n[0077]如图15所示，在所述第二像素电极80及钝化层60上形成保护层90；\n\n[0078]如图16所示，在所述保护层90上形成贴合层110，在所述贴合层110上设置封装基板120。\n\n[0079]需要说明的是，在本发明的第一和第二实施例中，所述光转换层100可根据需要选择形成或不形成，当所述光转换层100不形成时，所述保护层90相应填充所述光转换层100所在的区域即可，所述光转换层100可通过光刻制程或喷墨打印制程形成，且其对应位于所述过孔70内的第二像素电极80上，也即位于所述由所述过孔70产生的凹槽内。\n\n[0080]值得一提的是，由于将第一像素电极20b在光刻胶层30的附着性较差，且需要斜坡连接至所述容置槽40的底部，容易在斜坡与平面的交汇处反射断裂，因此，本发明的所述第一实施例与第二实施例相比，具有更好的制程稳定性。然而，在容置槽40的斜坡上形成第一像素电极20b，虽然制程稳定性不足，但却可以增强容置槽40的反光，进一步提升容置槽40的光提取效果，因此本发明的第二实施例与第一实施例相比，又具有更好的出光效率。\n\n[0081]具体实施时，如图17至图21所示，在本发明的第三实施例中，所述步骤S3中设置的Micro LED50为水平结构的Micro LED；\n\n[0082]该第三实施例具体包括如下步骤：\n\n[0083]如图17所示，在所述驱动基板10上形成多个第一像素电极20c，每一个第一像素电极20c均包括间隔设置的第一连接端子21c和第二连接端子22c；\n\n[0084]如图18所示，在所述驱动基板10及第一像素电极20c上形成光刻胶层30，并图案化所述光刻胶层30，得到阵列排布的多个容置槽40，每一个容置槽40均对应暴露出一第一像素电极20c；\n\n[0085]如图19所示，在所述容置槽40内设置Micro LED50，所述Micro LED50的第一电极和第二电极分别与所述第一连接端子21c和第二连接端子22c电性连接；\n\n[0086]如图20所示，在所述光刻胶层30、第一像素电极20c及所述Micro LED50上形成一层保护层90；\n\n[0087]如图21所示，在所述保护层90上形成贴合层110，在所述贴合层110设置封装基板120。\n\n[0088]具体实施时，如图22至图26所示，在本发明的第四实施例中，所述步骤S3中设置的Micro LED50为水平结构的Micro LED；\n\n[0089]该第四实施例具体包括如下步骤：\n\n[0090]如图22所示，在所述驱动基板10上形成光刻胶层30，并图案化所述光刻胶层30，得到阵列排布的多个容置槽40；\n\n[0091]如图23所示，在各个容置槽40的表面形成多个第一像素电极20d，每一个第一像素电极20d均包括间隔设置的第一连接端子21d和第二连接端子22d；\n\n[0092]如图24所示，在所述容置槽40内设置Micro LED50，所述Micro LED50的第一电极和第二电极分别与所述第一连接端子21d和第二连接端子22d电性连接；\n\n[0093]如图25所示，在所述光刻胶层30、第一像素电极20d及所述Micro LED50上形成一层保护层90；\n\n[0094]如图26所示，在所述保护层90上形成贴合层110，在所述贴合层110设置封装基板120。\n\n[0095]需要说明的是，由于将第一像素电极在光刻胶层30的附着性较差，且需要斜坡连接至所述容置槽40的底部，容易在斜坡与平面的交汇处反射断裂，因此，本发明的所述第三实施例与第四实施例相比，具有更好的制程稳定性。然而，在容置槽40的斜坡上形成第一像素电极，虽然制程稳定性不足，但却可以增强容置槽40的反光，进一步提升容置槽40的光提取效果，因此本发明的第四实施例与第三实施例相比，又具有更好的出光效率。\n\n[0096]优选地，在本发明的第一至第四实施例中，所述保护层90的材料为氧化硅、氮化硅、或其他有机绝缘介质，所述贴合层110为粘胶或能够固化的树脂材料，所述固化的方式可以为热固化或光固化。\n\n[0097]综上所述，本发明的Micro LED显示面板的制作方法包括如下步骤：步骤S1、提供一驱动基板，在驱动基板上形成光刻胶层；步骤S2、对所述光刻胶层进行图案化处理，形成阵列排布的多个容置槽；步骤S3、在所述各个容置槽内设置Micro LED；通过图案化光刻胶层制作容置Micro LED的容置槽，能够降低制程难度，提升Micro LED的出光效率。\n\n[0098]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10626, 23680, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种背光面光源及液晶显示装置。\n\n背景技术\n\n[0002]随着显示技术的发展，液晶显示装置(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。现有市场上的液晶显示装置大部分为背光型液晶显示装置，其包括液晶显示面板及背光模组(Backlight Module)。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，两片玻璃基板中间有许多垂直和水平的细小电线，通过通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。由于液晶显示面板本身不发光，需要借由背光模组提供的光源来正常显示影像，因此，背光模组成为液晶显示装置的关键组件之一。背光模组依照光源入射位置的不同分成侧入式背光模组与直下式背光模组两种。\n\n[0003]现有技术中，请参阅图1，存在一种异形液晶显示装置，其包括液晶面板100和背光模组200，所述液晶面板100设有第一过孔120，所述背光模组200对应所述第一过孔120的位置设有第二过孔240。如图2所示，当所述背光模组200为侧入式背光模组时，所述背光模组200的导光板220包括对应所述第一过孔120的第三过孔242。第三过孔242附近容易产生暗区280，LED 260发出的光线无法到达的该暗区280，由此影响用户使用的舒适度。为了解决上述问题通常采用传统的直下式背光模组，如图3所示，直下式背光模组300包括LED基板310、设于所述LED基板310上的数个LED 360以及设于数个LED 360上的光学膜片330，所述光学膜片330包括对应所述第一过孔120的第四过孔334，所述LED基板310包括对应所述第一过孔120和第四过孔334的第五过孔340，所述光学膜片330用于将数个LED 360发出的光线均匀扩散形成面光源，故传统的直下式背光模组厚度较厚，无法实现异形液晶显示装置的薄型化。\n\n[0004]迷你发光二极管(Mini LED)显示装置是一种在一个基板上集成微米级的LED阵列作为显示像素来实现图像显示的显示装置，其每一个像素均可定址、单独驱动点亮，属于自发光显示器，其耗电量小，且色彩饱和度接近OLED，很多厂商将其作为目前的研究重点。\n\n发明内容\n\n[0005]本发明的目的在于提供一种背光面光源，能够均匀发光，同时有利于液晶显示装置的薄型化设计，增强了产品的差异化性能，提升了产品的市场竞争力。\n\n[0006]本发明的目的在于提供一种液晶显示装置，其背光面光源能够均匀发光，同时有利于液晶显示装置的薄型化设计，增强了产品的差异化性能，提升了产品的市场竞争力。\n\n[0007]为实现上述目的，本发明提供了一种背光面光源，用于液晶面板，其特征在于，包括Mini LED基板及设于所述Mini LED基板上的数个Mini LED。\n\n[0008]所述Mini LED基板设有通孔以与液晶面板配合。\n\n[0009]所述通孔被Mini LED完全或部分包围。\n\n[0010]所述数个Mini LED绕开所述通孔均匀间隔地设置在Mini LED基板上。\n\n[0011]所述通孔为圆形、椭圆形或多边形。\n\n[0012]本发明还提供了一种液晶显示装置，包括液晶面板及设于所述液晶面板一侧的背光面光源；\n\n[0013]所述背光面光源包括Mini LED基板及设于所述Mini LED基板上的数个Mini LED，所述Mini LED朝向所述液晶面板设置。\n\n[0014]所述液晶面板设有贯穿液晶面板的穿孔，所述背光面光源的Mini LED基板设有与穿孔对齐的通孔。\n\n[0015]所述通孔被Mini LED完全或部分包围。\n\n[0016]所述数个Mini LED绕开所述通孔均匀间隔地设置在Mini LED基板上。\n\n[0017]所述穿孔与通孔的形状相同，呈圆形、椭圆形或多边形。\n\n[0018]本发明的有益效果：本发明提供的一种背光面光源，包括Mini LED基板及设于所述Mini LED基板上的数个Mini LED，所述Mini LED的尺寸为微米级别，能够极大地降低背光面光源的厚度；且所述Mini LED基板设有通孔，所述数个Mini LED绕开通孔均匀设置在Mini LED基板上，一方面能够减少设置Mini LED以降低生产成本，另一方面能够保证背光面光源均匀发光。本发明提供的一种液晶显示装置，包括上述背光面光源，所述背光面光源厚度较薄且能够均匀发光，有利于液晶显示装置的薄型化设计，增强了产品的差异化性能，提升了产品的市场竞争力。\n\n附图说明\n\n[0019]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0020]附图中，\n\n[0021]图1为现有技术中异形液晶显示装置的结构示意图；\n\n[0022]图2为现有技术中异形液晶显示装置的侧入式背光模组的导光板俯视图；\n\n[0023]图3为现有技术中采用直下式背光模组的异形液晶显示装置的结构示意图；\n\n[0024]图4为本发明的液晶显示装置的结构示意图；\n\n[0025]图5为本发明的液晶显示装置的示意图；\n\n[0026]图6为本发明的液晶显示装置的液晶面板的示意图；\n\n[0027]图7为本发明的液晶显示装置的背光面光源的示意图。\n\n具体实施方式\n\n[0028]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0029]请参阅图4，本发明提供一种背光面光源20，用于液晶面板10，包括Mini LED基板22及设于所述Mini LED基板22上的数个Mini LED 26。与现有技术中的采用LED作为光源相比，本发明采用尺寸为微米级的Mini LED作为面光源，一方面由于Mini LED本身的尺寸较小可以极大地减小厚度，另一方面可以进一步省略光学膜片以减小厚度，将该背光面光源20应用于液晶显示装置，能够有利于液晶显示装置的薄型化设计。\n\n[0030]具体地，如图4和图7所示，所述液晶面板10为异形液晶面板，该异形液晶面板上设有穿孔12。所述Mini LED基板22设有通孔24以与液晶面板10配合。\n\n[0031]具体地，所述通孔24被Mini LED 26完全或部分包围。\n\n[0032]具体地，所述数个Mini LED 26绕开所述通孔24均匀间隔地设置在Mini LED基板22上，一方面能够减少设置Mini LED 26以降低生产成本，另一方面能够保证背光面光源20均匀发光。\n\n[0033]具体地，所述通孔24可为圆形或椭圆形，当然，根据实际产品的需求，所述通孔24还可为多边形，例如三角形、正方形或长方形。\n\n[0034]上述背光面光源20包括Mini LED基板22及设于所述Mini LED基板22上的数个Mini LED 26，所述Mini LED 26的尺寸为微米级别，能够极大地降低背光面光源20的厚度；且所述Mini LED基板22设有通孔24，所述数个Mini LED 26绕开通孔24均匀设置在MiniLED基板22上，一方面能够减少设置Mini LED 26以降低生产成本，另一方面能够保证背光面光源20均匀发光。\n\n[0035]基于上述背光面光源20，请参阅图4至图7，本发明还提供一种液晶显示装置，包括液晶面板10及设于所述液晶面板10一侧的背光面光源20；\n\n[0036]所述背光面光源20包括Mini LED基板22及设于所述Mini LED基板22上的数个Mini LED 26，所述Mini LED 26朝向所述液晶面板10设置。与现有技术中的采用LED作为光源相比，本发明采用尺寸为微米级的Mini LED作为面光源，一方面由于Mini LED本身的尺寸较小可以极大地减小厚度，另一方面可以进一步省略光学膜片以减小厚度，将该背光面光源20应用于液晶显示装置，能够有利于液晶显示装置的薄型化设计。\n\n[0037]具体地，所述液晶面板10设有贯穿液晶面板10的穿孔12，所述背光面光源20的Mini LED基板22设有与穿孔12对齐的通孔24。\n\n[0038]具体地，所述通孔24被Mini LED 26完全或部分包围。\n\n[0039]具体地，所述数个Mini LED 26绕开所述通孔24均匀间隔地设置在Mini LED基板22上，一方面能够减少设置Mini LED 26以降低生产成本，另一方面能够保证背光面光源20均匀发光。\n\n[0040]需要说明的是，液晶面板10设有贯穿液晶面板10的穿孔12，因此液晶面板10对应该穿孔12的区域是不需要显示的，本发明在背光面光源20的Mini LED基板22对应液晶面板10的穿孔12设置通孔24，所述数个Mini LED 26绕开所述通孔24设置在Mini LED基板22上，那么对应液晶面板10对应该穿孔12的区域是不会显示发光的。\n\n[0041]具体地，所述穿孔12与通孔24的形状相同。进一步地，所述穿孔12与通孔24可为圆形或椭圆形，当然，根据实际产品的需求，所述穿孔12与通孔24还可为多边形，例如三角形、正方形或长方形。\n\n[0042]具体地，所述Mini LED 26为白光Mini LED或蓝光Mini LED。\n\n[0043]上述液晶显示装置的背光面光源20包括Mini LED基板22及设于所述Mini LED基板22上的数个Mini LED 26，所述Mini LED 26的尺寸为微米级别，能够极大地降低背光面光源20的厚度，进而有利于液晶显示装置的薄型化设计；且所述Mini LED基板22设有通孔24，所述数个Mini LED 26绕开通孔24均匀设置在Mini LED基板22上，一方面能够减少设置Mini LED 26以降低生产成本，另一方面能够保证背光面光源20均匀发光。\n\n[0044]综上所述，本发明的背光面光源包括Mini LED基板及设于所述Mini LED基板上的数个Mini LED，所述Mini LED的尺寸为微米级别，能够极大地降低背光面光源的厚度；且所述Mini LED基板设有通孔，所述数个Mini LED绕开通孔均匀设置在Mini LED基板上，一方面能够减少设置Mini LED以降低生产成本，另一方面能够保证背光面光源均匀发光。本发明的液晶显示装置包括上述背光面光源，所述背光面光源厚度较薄且能够均匀发光，有利于液晶显示装置的薄型化设计，增强了产品的差异化性能，提升了产品的市场竞争力。\n\n[0045]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种背光面光源及液晶显示装置。\n\n背景技术\n\n[0002]随着显示技术的发展，液晶显示装置(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。现有市场上的液晶显示装置大部分为背光型液晶显示装置，其包括液晶显示面板及背光模组(Backlight Module)。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，两片玻璃基板中间有许多垂直和水平的细小电线，通过通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。由于液晶显示面板本身不发光，需要借由背光模组提供的光源来正常显示影像，因此，背光模组成为液晶显示装置的关键组件之一。背光模组依照光源入射位置的不同分成侧入式背光模组与直下式背光模组两种。\n\n[0003]现有技术中，请参阅图1，存在一种异形液晶显示装置，其包括液晶面板100和背光模组200，所述液晶面板100设有第一过孔120，所述背光模组200对应所述第一过孔120的位置设有第二过孔240。如图2所示，当所述背光模组200为侧入式背光模组时，所述背光模组200的导光板220包括对应所述第一过孔120的第三过孔242。第三过孔242附近容易产生暗区280，LED 260发出的光线无法到达的该暗区280，由此影响用户使用的舒适度。为了解决上述问题通常采用传统的直下式背光模组，如图3所示，直下式背光模组300包括LED基板310、设于所述LED基板310上的数个LED 360以及设于数个LED 360上的光学膜片330，所述光学膜片330包括对应所述第一过孔120的第四过孔334，所述LED基板310包括对应所述第一过孔120和第四过孔334的第五过孔340，所述光学膜片330用于将数个LED 360发出的光线均匀扩散形成面光源，故传统的直下式背光模组厚度较厚，无法实现异形液晶显示装置的薄型化。\n\n[0004]迷你发光二极管(Mini LED)显示装置是一种在一个基板上集成微米级的LED阵列作为显示像素来实现图像显示的显示装置，其每一个像素均可定址、单独驱动点亮，属于自发光显示器，其耗电量小，且色彩饱和度接近OLED，很多厂商将其作为目前的研究重点。\n\n发明内容\n\n[0005]本发明的目的在于提供一种背光面光源，能够均匀发光，同时有利于液晶显示装置的薄型化设计，增强了产品的差异化性能，提升了产品的市场竞争力。\n\n[0006]本发明的目的在于提供一种液晶显示装置，其背光面光源能够均匀发光，同时有利于液晶显示装置的薄型化设计，增强了产品的差异化性能，提升了产品的市场竞争力。\n\n[0007]为实现上述目的，本发明提供了一种背光面光源，用于液晶面板，其特征在于，包括Mini LED基板及设于所述Mini LED基板上的数个Mini LED。\n\n[0008]所述Mini LED基板设有通孔以与液晶面板配合。\n\n[0009]所述通孔被Mini LED完全或部分包围。\n\n[0010]所述数个Mini LED绕开所述通孔均匀间隔地设置在Mini LED基板上。\n\n[0011]所述通孔为圆形、椭圆形或多边形。\n\n[0012]本发明还提供了一种液晶显示装置，包括液晶面板及设于所述液晶面板一侧的背光面光源；\n\n[0013]所述背光面光源包括Mini LED基板及设于所述Mini LED基板上的数个Mini LED，所述Mini LED朝向所述液晶面板设置。\n\n[0014]所述液晶面板设有贯穿液晶面板的穿孔，所述背光面光源的Mini LED基板设有与穿孔对齐的通孔。\n\n[0015]所述通孔被Mini LED完全或部分包围。\n\n[0016]所述数个Mini LED绕开所述通孔均匀间隔地设置在Mini LED基板上。\n\n[0017]所述穿孔与通孔的形状相同，呈圆形、椭圆形或多边形。\n\n[0018]本发明的有益效果：本发明提供的一种背光面光源，包括Mini LED基板及设于所述Mini LED基板上的数个Mini LED，所述Mini LED的尺寸为微米级别，能够极大地降低背光面光源的厚度；且所述Mini LED基板设有通孔，所述数个Mini LED绕开通孔均匀设置在Mini LED基板上，一方面能够减少设置Mini LED以降低生产成本，另一方面能够保证背光面光源均匀发光。本发明提供的一种液晶显示装置，包括上述背光面光源，所述背光面光源厚度较薄且能够均匀发光，有利于液晶显示装置的薄型化设计，增强了产品的差异化性能，提升了产品的市场竞争力。\n\n附图说明\n\n[0019]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0020]附图中，\n\n[0021]图1为现有技术中异形液晶显示装置的结构示意图；\n\n[0022]图2为现有技术中异形液晶显示装置的侧入式背光模组的导光板俯视图；\n\n[0023]图3为现有技术中采用直下式背光模组的异形液晶显示装置的结构示意图；\n\n[0024]图4为本发明的液晶显示装置的结构示意图；\n\n[0025]图5为本发明的液晶显示装置的示意图；\n\n[0026]图6为本发明的液晶显示装置的液晶面板的示意图；\n\n[0027]图7为本发明的液晶显示装置的背光面光源的示意图。\n\n具体实施方式\n\n[0028]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0029]请参阅图4，本发明提供一种背光面光源20，用于液晶面板10，包括Mini LED基板22及设于所述Mini LED基板22上的数个Mini LED 26。与现有技术中的采用LED作为光源相比，本发明采用尺寸为微米级的Mini LED作为面光源，一方面由于Mini LED本身的尺寸较小可以极大地减小厚度，另一方面可以进一步省略光学膜片以减小厚度，将该背光面光源20应用于液晶显示装置，能够有利于液晶显示装置的薄型化设计。\n\n[0030]具体地，如图4和图7所示，所述液晶面板10为异形液晶面板，该异形液晶面板上设有穿孔12。所述Mini LED基板22设有通孔24以与液晶面板10配合。\n\n[0031]具体地，所述通孔24被Mini LED 26完全或部分包围。\n\n[0032]具体地，所述数个Mini LED 26绕开所述通孔24均匀间隔地设置在Mini LED基板22上，一方面能够减少设置Mini LED 26以降低生产成本，另一方面能够保证背光面光源20均匀发光。\n\n[0033]具体地，所述通孔24可为圆形或椭圆形，当然，根据实际产品的需求，所述通孔24还可为多边形，例如三角形、正方形或长方形。\n\n[0034]上述背光面光源20包括Mini LED基板22及设于所述Mini LED基板22上的数个Mini LED 26，所述Mini LED 26的尺寸为微米级别，能够极大地降低背光面光源20的厚度；且所述Mini LED基板22设有通孔24，所述数个Mini LED 26绕开通孔24均匀设置在MiniLED基板22上，一方面能够减少设置Mini LED 26以降低生产成本，另一方面能够保证背光面光源20均匀发光。\n\n[0035]基于上述背光面光源20，请参阅图4至图7，本发明还提供一种液晶显示装置，包括液晶面板10及设于所述液晶面板10一侧的背光面光源20；\n\n[0036]所述背光面光源20包括Mini LED基板22及设于所述Mini LED基板22上的数个Mini LED 26，所述Mini LED 26朝向所述液晶面板10设置。与现有技术中的采用LED作为光源相比，本发明采用尺寸为微米级的Mini LED作为面光源，一方面由于Mini LED本身的尺寸较小可以极大地减小厚度，另一方面可以进一步省略光学膜片以减小厚度，将该背光面光源20应用于液晶显示装置，能够有利于液晶显示装置的薄型化设计。\n\n[0037]具体地，所述液晶面板10设有贯穿液晶面板10的穿孔12，所述背光面光源20的Mini LED基板22设有与穿孔12对齐的通孔24。\n\n[0038]具体地，所述通孔24被Mini LED 26完全或部分包围。\n\n[0039]具体地，所述数个Mini LED 26绕开所述通孔24均匀间隔地设置在Mini LED基板22上，一方面能够减少设置Mini LED 26以降低生产成本，另一方面能够保证背光面光源20均匀发光。\n\n[0040]需要说明的是，液晶面板10设有贯穿液晶面板10的穿孔12，因此液晶面板10对应该穿孔12的区域是不需要显示的，本发明在背光面光源20的Mini LED基板22对应液晶面板10的穿孔12设置通孔24，所述数个Mini LED 26绕开所述通孔24设置在Mini LED基板22上，那么对应液晶面板10对应该穿孔12的区域是不会显示发光的。\n\n[0041]具体地，所述穿孔12与通孔24的形状相同。进一步地，所述穿孔12与通孔24可为圆形或椭圆形，当然，根据实际产品的需求，所述穿孔12与通孔24还可为多边形，例如三角形、正方形或长方形。\n\n[0042]具体地，所述Mini LED 26为白光Mini LED或蓝光Mini LED。\n\n[0043]上述液晶显示装置的背光面光源20包括Mini LED基板22及设于所述Mini LED基板22上的数个Mini LED 26，所述Mini LED 26的尺寸为微米级别，能够极大地降低背光面光源20的厚度，进而有利于液晶显示装置的薄型化设计；且所述Mini LED基板22设有通孔24，所述数个Mini LED 26绕开通孔24均匀设置在Mini LED基板22上，一方面能够减少设置Mini LED 26以降低生产成本，另一方面能够保证背光面光源20均匀发光。\n\n[0044]综上所述，本发明的背光面光源包括Mini LED基板及设于所述Mini LED基板上的数个Mini LED，所述Mini LED的尺寸为微米级别，能够极大地降低背光面光源的厚度；且所述Mini LED基板设有通孔，所述数个Mini LED绕开通孔均匀设置在Mini LED基板上，一方面能够减少设置Mini LED以降低生产成本，另一方面能够保证背光面光源均匀发光。本发明的液晶显示装置包括上述背光面光源，所述背光面光源厚度较薄且能够均匀发光，有利于液晶显示装置的薄型化设计，增强了产品的差异化性能，提升了产品的市场竞争力。\n\n[0045]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10627, 23681, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种驱动基板、制备方法及微型LED阵列发光背光模组。\n\n背景技术\n\n[0002]随着可穿戴应用设备如智能眼镜、智能手表等的逐渐兴起，显示行业对可挠曲显示器件的需求也不断增加。有机发光二极管显示器件(Organic Light Emitting Display，OLED)具有自发光不需背光源、厚度薄、视角广、反应速度快等特点，从而具有可挠曲显示的天然优势。面对柔性OLED的竞争，传统的液晶显示技术也逐渐采用柔性衬底往柔性、曲面等方向进行突破，由此可见，柔性、曲面显示的时代即将来临。\n\n[0003]图1所示为一种现有显示屏边界设计示意图。目前显示屏的上、左右边界(border)均压缩至极小的边框足以满足现阶段全面屏的需求，但是在下边界处由于需要做数据线扇出(Data line Fanout)以及预留芯片绑定(IC bonding)区和柔性电路板(FPC)绑定区，使得下边界进一步压缩成为当前急需解决的技术问题。\n\n[0004]图2所示为另一种现有显示屏边界设计示意图。为进一步压缩下边界，目前通用的解决方式是采用COF(circuit on film)方式，即在下边界区仅预留FPC绑定区，而芯片绑定直接放置在FPC上，COF技术的应用可以将下边界压缩至3mm甚至2mm左右，但是相对于左右边界[0005]于此同时，目前小尺寸显示器采用如图3所示的背光模组侧入式入光方案，其中LED灯条(lightbar)位于显示屏的下边界处，LED本身存在一定的厚度，同时由于LED作为点光源，本身需要通过导光板的散光作用将光线均匀扩散开从而避免近光处的热点(hotspot)现象，需要一定的混光距离，混光距离的压缩通常会伴随着背光效率的急剧衰减，使得现有中心尺寸液晶模组的背光下边框存在一定的极限(约2mm)。因而即使液晶显示装置盒(cell)的下边界压缩至与左右边界相同大小，仍然需要考量背光有效显示区垂直配向(VA)距离盒(cell)有效显示区(AA区)的下边界间距，未来在液晶盒下边界压缩至极窄水平时，背光的下边框反而会成为实现全面屏(极致窄边框)的关键制约。\n\n[0006]直下式具有窄边框的优势，在大尺寸显示领域得到广泛的应用，但是面临着厚度增加的问题。采用小尺寸的mini-LED(微型LED)以更小的间距(pitch)进行排列可以获得较小的混光距离，为小尺寸直下式背光源实现轻、薄、窄提供更大的可能性。其中mini-LED的尺寸通常小于1mm，相邻LED之间的间距也小于1mm。图4为现有微型LED阵列发光背光模组结构示意图，由下至上主要包括驱动基板10，微型LED 20阵列，荧光膜30，扩散片40，及增亮膜50。微型LED 20阵列在组成背光模组时，通常需要搭配如图4所示的扩散片40与增亮膜50，其中微型LED 20入射光线经过增亮膜50的反射之后会重新进入背光内部，由于相邻微型LED 20之间间距过小，且微型LED 20占据区域不能提供有效的反射，因而仅能通过相邻微型LED20之间有限的反射区进行光线回收，\n\n[0007]图5A及图5B分别为现有微型LED阵列发光背光模组结构侧视和俯视示意图。驱动基板10上除设有微型LED 20阵列外，还设有高反射层60，荧光膜30覆盖于驱动基板10上。因现有微型LED阵列发光背光模组反射区无法布置传统的高反结构，所以通常会采用白油(涂层)等高反射层60进行替代，但是实际反射率仅能达到90％左右，无法达成传统反射片99.9％的反射率，在亮度效率上具有一定的劣势。且白油等高反射层60通常是通过旋涂和光刻工艺后期制备的，为避免所述反射层对于微型LED 20的电性导电焊盘(pad)21造成遮挡，通常会在驱动基板10电极焊盘周围及相邻微型LED正-负(P-N)电极焊盘21之间设置一定的禁制区避免因为工艺的误差导致所述高反射层60覆盖所述电极焊盘21，所述禁制区虽然单个面积较小，但是总体面积占比较大，造成了光效不可避免的损失，单纯提高刻蚀精度难以克服上述问题。\n\n发明内容\n\n[0008]因此，本发明的目的在于提供一种驱动基板、制备方法及微型LED阵列发光背光模组，解决微型LED阵列发光背光由于传统高反射层刻蚀工艺误差所造成的电极焊盘边缘禁制区所造成的反射率损失。\n\n[0009]为实现上述目的，本发明提供了一种驱动基板，包括：由下至上顺序堆叠的第一金属层，第一高反射层，以及第二金属层。\n\n[0010]其中，还包括绝缘支撑层，所述绝缘支撑层设于第一金属层和第一高反射层之间。\n\n[0011]其中，还包括第二高反射层，所述第二高反射层设于第二金属层上。\n\n[0012]其中，所述第一金属层和第二金属层分别形成金属导线图案。\n\n[0013]其中，所述第一高反射层为高反射有机物或者多层无机薄膜构成的高反射率薄层。\n\n[0014]其中，所述第二高反射层为高反射有机物构成的高反射率薄层。\n\n[0015]其中，所述第二高反射层露出所述驱动基板的电极焊盘。\n\n[0016]其中，所述绝缘支撑层为聚亚酰胺层。\n\n[0017]本发明还提供了一种微型LED阵列发光背光模组，包括：由下至上顺序层叠的驱动基板、微型LED阵列、荧光膜、扩散片、以及增亮膜，所述驱动基板为上述任一项所述的驱动基板。\n\n[0018]本发明还提供了一种驱动基板的制备方法，包括：\n\n[0019]制备第一金属层；\n\n[0020]制备绝缘支撑层；\n\n[0021]制备第一高反射层；\n\n[0022]制备第二金属层；\n\n[0023]分别刻蚀第一金属层和第二金属层形成金属导线图案；\n\n[0024]制备第二高反射层；\n\n[0025]除去电极焊盘表面的第二高反射层。\n\n[0026]综上，本发明的驱动基板、制备方法及微型LED阵列发光背光模组解决了微型LED阵列发光背光由于传统高反射层刻蚀工艺误差所造成的电极焊盘边缘禁制区所造成的反射率损失，同时也可以解决传统涂覆高反射层(如白油)反射率有限的问题。\n\n附图说明\n\n[0027]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。\n\n[0028]附图中，\n\n[0029]图1为一种现有显示屏边界设计示意图；\n\n[0030]图2为另一种现有显示屏边界设计示意图；\n\n[0031]图3为背光模组侧入式入光方案示意图；\n\n[0032]图4为现有微型LED阵列发光背光模组结构示意图；\n\n[0033]图5A及图5B为现有微型LED阵列发光背光模组结构侧视和俯视示意图；\n\n[0034]图6为本发明驱动基板一实施例的结构示意图；\n\n[0035]图7为本发明驱动基板又一实施例的结构示意图；\n\n[0036]图8为本发明驱动基板的制备方法一较佳实施例的流程图。\n\n具体实施方式\n\n[0037]本发明的驱动基板可用于微型LED阵列发光背光模组，该驱动基板主要包括：由下至上顺序堆叠的第一金属层，第一高反射层，以及第二金属层。该驱动基板还可以包括绝缘支撑层，绝缘支撑层设于第一金属层和第一高反射层之间。驱动基板至少包括第一金属层—第一高反射层—第二金属层三层结构，或者至少包括第一金属层—绝缘支撑层—第一高反射层—第二金属层四层结构。\n\n[0038]在本发明的较佳实施例方式中，驱动基板进一步还可以包括第二高反射层，第二高反射层设于第二金属层上。\n\n[0039]参见图6，其为本发明驱动基板一实施例的结构示意图。该较佳实施例中，驱动基板11主要包括：由下至上顺序堆叠的第一金属层，第一高反射层，第二金属层，以及第二高反射层，驱动基板至少包括第二高反射层在内的四层结构。\n\n[0040]参见图7，其为本发明驱动基板又一实施例的结构示意图。该较佳实施例中，驱动基板12主要包括：由下至上顺序堆叠的第一金属层，绝缘支撑层，第一高反射层，第二金属层，以及第二高反射层，驱动基板至少包括第二高反射层在内的五层结构。\n\n[0041]本发明中，绝缘支撑层具体可以为PI(聚亚酰胺)层，PI仅为一种电性隔离材料的举例，也可以为常见PCB基材。驱动基板具体可以为FPC基板，FPC基板仅为本发明驱动基板一种常见形式，也可以采用PCB等其他形式替代。第一金属层和第二金属层分别形成金属导线图案，以实现驱动电路功能；第一金属层和/或第二金属层可以为铜，也可以替换为铝、银等替代性电学导通金属。第一高反射层可以为传统高反射有机物(统称白油，反射率～90％)或者多层无机薄膜构成的高反射率薄层(反射率最大接近100％)。第二高反射层可以为传统高反射有机物(统称白油)，便于适用于传统刻蚀工艺。\n\n[0042]下面具体以FPC基板代表驱动基板，PI层代表绝缘支撑层，铜代表第一金属层和第二金属层，高反射层1和高反射层2分别代表第一高反射层和第二高反射层，来对本发明技术方案进行说明。\n\n[0043]本发明FPC基板通过在传统FPC堆叠结构铜-PI-铜中加入高反射层1形成铜-PI-高反射层1-铜四层结构FPC基板，或者替代PI层构成铜-高反射层1-铜三层堆叠FPC基板结构。高反射层1的加入保证了FPC基板的高反射特性，同时在刻蚀上层铜结构构成上层金属导线层时，非铜导线区均为高反射层1，当用于微型LED阵列发光背光模组时，可提高反射率。\n\n[0044]本发明最后进一步可以通过传统涂覆高反射层的工艺在铜导线表面制备高反射层2，所获得的FPC基板至少包括铜-高反射层1-铜-高反射层2四层结构，或者铜-PI-高反射层1-铜-高反射层2五层结构，并且可以使高反射层2露出FPC基板上用于与LED阵列电连接的电极焊盘，从而使得整个FPC基板仅在电极焊盘处为非高反射区，有效保证了当本发明FPC基板用于微型LED阵列发光背光模组时微型阵列发光背光模组的反射效率。\n\n[0045]根据本发明驱动基板的具体实施例，本发明还提供了高效的微型LED阵列发光背光模组，主要包括：由下至上顺序层叠的驱动基板、微型LED阵列、荧光膜、扩散片、以及增亮膜，其中驱动基板可以采用本发明前述的驱动基板，例如前述的FPC基板。本发明的微型LED阵列发光背光模组即微型LED面光源的结构可以参考图4，以本发明的驱动基板代替图4中的驱动基板10即可。\n\n[0046]微型LED以阵列形式排布于驱动基板上，微型LED的尺寸可以为100-1000μm，相邻微型LED之间的间距可以为100-2000μm。微型LED阵列可以采用蓝光LED组成阵列。荧光膜以整面覆盖的方式覆盖微型LED阵列和驱动基板表面，扩散片、增亮膜等为背光常见结构，此处不做赘述。\n\n[0047]针对本发明具体驱动基板的具体实施例，本发明还提供了相应的驱动基板的制备方法。参见图8，其为本发明驱动基板的制备方法一较佳实施例的流程图，主要包括：\n\n[0048]制备第一金属层，具体可以为下层铜金属层。\n\n[0049]制备绝缘支撑层，具体可以为PI层。\n\n[0050]制备第一高反射层，具体可以为高反射层1。\n\n[0051]制备第二金属层，具体可以为上层铜金属层。\n\n[0052]分别刻蚀第一金属层和第二金属层形成金属导线图案；具体可以分别刻蚀上下铜线层构成上下导线层，构成电性导线，并通过过孔工艺形成上下导线互联。\n\n[0053]制备第二高反射层，具体可以在第二金属层表面制备高反射层2。\n\n[0054]除去电极焊盘表面的第二高反射层，具体可以通过光刻刻蚀工艺仅保留上层铜线(电极焊盘除外)表面的高反射层2。使得整个驱动基板仅在电极焊盘处为非高反射区，有效保证了所制得驱动基板用于微型LED阵列发光背光模组时的反射效率。\n\n[0055]综上，本发明的驱动基板、制备方法及微型LED阵列发光背光模组解决了微型LED阵列发光背光由于传统高反射层刻蚀工艺误差所造成的电极焊盘边缘禁制区所造成的反射率损失，同时也可以解决传统涂覆高反射层(如白油)反射率有限的问题。\n\n[0056]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种驱动基板、制备方法及微型LED阵列发光背光模组。\n\n背景技术\n\n[0002]随着可穿戴应用设备如智能眼镜、智能手表等的逐渐兴起，显示行业对可挠曲显示器件的需求也不断增加。有机发光二极管显示器件(Organic Light Emitting Display，OLED)具有自发光不需背光源、厚度薄、视角广、反应速度快等特点，从而具有可挠曲显示的天然优势。面对柔性OLED的竞争，传统的液晶显示技术也逐渐采用柔性衬底往柔性、曲面等方向进行突破，由此可见，柔性、曲面显示的时代即将来临。\n\n[0003]图1所示为一种现有显示屏边界设计示意图。目前显示屏的上、左右边界(border)均压缩至极小的边框足以满足现阶段全面屏的需求，但是在下边界处由于需要做数据线扇出(Data line Fanout)以及预留芯片绑定(IC bonding)区和柔性电路板(FPC)绑定区，使得下边界进一步压缩成为当前急需解决的技术问题。\n\n[0004]图2所示为另一种现有显示屏边界设计示意图。为进一步压缩下边界，目前通用的解决方式是采用COF(circuit on film)方式，即在下边界区仅预留FPC绑定区，而芯片绑定直接放置在FPC上，COF技术的应用可以将下边界压缩至3mm甚至2mm左右，但是相对于左右边界[0005]于此同时，目前小尺寸显示器采用如图3所示的背光模组侧入式入光方案，其中LED灯条(lightbar)位于显示屏的下边界处，LED本身存在一定的厚度，同时由于LED作为点光源，本身需要通过导光板的散光作用将光线均匀扩散开从而避免近光处的热点(hotspot)现象，需要一定的混光距离，混光距离的压缩通常会伴随着背光效率的急剧衰减，使得现有中心尺寸液晶模组的背光下边框存在一定的极限(约2mm)。因而即使液晶显示装置盒(cell)的下边界压缩至与左右边界相同大小，仍然需要考量背光有效显示区垂直配向(VA)距离盒(cell)有效显示区(AA区)的下边界间距，未来在液晶盒下边界压缩至极窄水平时，背光的下边框反而会成为实现全面屏(极致窄边框)的关键制约。\n\n[0006]直下式具有窄边框的优势，在大尺寸显示领域得到广泛的应用，但是面临着厚度增加的问题。采用小尺寸的mini-LED(微型LED)以更小的间距(pitch)进行排列可以获得较小的混光距离，为小尺寸直下式背光源实现轻、薄、窄提供更大的可能性。其中mini-LED的尺寸通常小于1mm，相邻LED之间的间距也小于1mm。图4为现有微型LED阵列发光背光模组结构示意图，由下至上主要包括驱动基板10，微型LED 20阵列，荧光膜30，扩散片40，及增亮膜50。微型LED 20阵列在组成背光模组时，通常需要搭配如图4所示的扩散片40与增亮膜50，其中微型LED 20入射光线经过增亮膜50的反射之后会重新进入背光内部，由于相邻微型LED 20之间间距过小，且微型LED 20占据区域不能提供有效的反射，因而仅能通过相邻微型LED20之间有限的反射区进行光线回收，\n\n[0007]图5A及图5B分别为现有微型LED阵列发光背光模组结构侧视和俯视示意图。驱动基板10上除设有微型LED 20阵列外，还设有高反射层60，荧光膜30覆盖于驱动基板10上。因现有微型LED阵列发光背光模组反射区无法布置传统的高反结构，所以通常会采用白油(涂层)等高反射层60进行替代，但是实际反射率仅能达到90％左右，无法达成传统反射片99.9％的反射率，在亮度效率上具有一定的劣势。且白油等高反射层60通常是通过旋涂和光刻工艺后期制备的，为避免所述反射层对于微型LED 20的电性导电焊盘(pad)21造成遮挡，通常会在驱动基板10电极焊盘周围及相邻微型LED正-负(P-N)电极焊盘21之间设置一定的禁制区避免因为工艺的误差导致所述高反射层60覆盖所述电极焊盘21，所述禁制区虽然单个面积较小，但是总体面积占比较大，造成了光效不可避免的损失，单纯提高刻蚀精度难以克服上述问题。\n\n发明内容\n\n[0008]因此，本发明的目的在于提供一种驱动基板、制备方法及微型LED阵列发光背光模组，解决微型LED阵列发光背光由于传统高反射层刻蚀工艺误差所造成的电极焊盘边缘禁制区所造成的反射率损失。\n\n[0009]为实现上述目的，本发明提供了一种驱动基板，包括：由下至上顺序堆叠的第一金属层，第一高反射层，以及第二金属层。\n\n[0010]其中，还包括绝缘支撑层，所述绝缘支撑层设于第一金属层和第一高反射层之间。\n\n[0011]其中，还包括第二高反射层，所述第二高反射层设于第二金属层上。\n\n[0012]其中，所述第一金属层和第二金属层分别形成金属导线图案。\n\n[0013]其中，所述第一高反射层为高反射有机物或者多层无机薄膜构成的高反射率薄层。\n\n[0014]其中，所述第二高反射层为高反射有机物构成的高反射率薄层。\n\n[0015]其中，所述第二高反射层露出所述驱动基板的电极焊盘。\n\n[0016]其中，所述绝缘支撑层为聚亚酰胺层。\n\n[0017]本发明还提供了一种微型LED阵列发光背光模组，包括：由下至上顺序层叠的驱动基板、微型LED阵列、荧光膜、扩散片、以及增亮膜，所述驱动基板为上述任一项所述的驱动基板。\n\n[0018]本发明还提供了一种驱动基板的制备方法，包括：\n\n[0019]制备第一金属层；\n\n[0020]制备绝缘支撑层；\n\n[0021]制备第一高反射层；\n\n[0022]制备第二金属层；\n\n[0023]分别刻蚀第一金属层和第二金属层形成金属导线图案；\n\n[0024]制备第二高反射层；\n\n[0025]除去电极焊盘表面的第二高反射层。\n\n[0026]综上，本发明的驱动基板、制备方法及微型LED阵列发光背光模组解决了微型LED阵列发光背光由于传统高反射层刻蚀工艺误差所造成的电极焊盘边缘禁制区所造成的反射率损失，同时也可以解决传统涂覆高反射层(如白油)反射率有限的问题。\n\n附图说明\n\n[0027]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。\n\n[0028]附图中，\n\n[0029]图1为一种现有显示屏边界设计示意图；\n\n[0030]图2为另一种现有显示屏边界设计示意图；\n\n[0031]图3为背光模组侧入式入光方案示意图；\n\n[0032]图4为现有微型LED阵列发光背光模组结构示意图；\n\n[0033]图5A及图5B为现有微型LED阵列发光背光模组结构侧视和俯视示意图；\n\n[0034]图6为本发明驱动基板一实施例的结构示意图；\n\n[0035]图7为本发明驱动基板又一实施例的结构示意图；\n\n[0036]图8为本发明驱动基板的制备方法一较佳实施例的流程图。\n\n具体实施方式\n\n[0037]本发明的驱动基板可用于微型LED阵列发光背光模组，该驱动基板主要包括：由下至上顺序堆叠的第一金属层，第一高反射层，以及第二金属层。该驱动基板还可以包括绝缘支撑层，绝缘支撑层设于第一金属层和第一高反射层之间。驱动基板至少包括第一金属层—第一高反射层—第二金属层三层结构，或者至少包括第一金属层—绝缘支撑层—第一高反射层—第二金属层四层结构。\n\n[0038]在本发明的较佳实施例方式中，驱动基板进一步还可以包括第二高反射层，第二高反射层设于第二金属层上。\n\n[0039]参见图6，其为本发明驱动基板一实施例的结构示意图。该较佳实施例中，驱动基板11主要包括：由下至上顺序堆叠的第一金属层，第一高反射层，第二金属层，以及第二高反射层，驱动基板至少包括第二高反射层在内的四层结构。\n\n[0040]参见图7，其为本发明驱动基板又一实施例的结构示意图。该较佳实施例中，驱动基板12主要包括：由下至上顺序堆叠的第一金属层，绝缘支撑层，第一高反射层，第二金属层，以及第二高反射层，驱动基板至少包括第二高反射层在内的五层结构。\n\n[0041]本发明中，绝缘支撑层具体可以为PI(聚亚酰胺)层，PI仅为一种电性隔离材料的举例，也可以为常见PCB基材。驱动基板具体可以为FPC基板，FPC基板仅为本发明驱动基板一种常见形式，也可以采用PCB等其他形式替代。第一金属层和第二金属层分别形成金属导线图案，以实现驱动电路功能；第一金属层和/或第二金属层可以为铜，也可以替换为铝、银等替代性电学导通金属。第一高反射层可以为传统高反射有机物(统称白油，反射率～90％)或者多层无机薄膜构成的高反射率薄层(反射率最大接近100％)。第二高反射层可以为传统高反射有机物(统称白油)，便于适用于传统刻蚀工艺。\n\n[0042]下面具体以FPC基板代表驱动基板，PI层代表绝缘支撑层，铜代表第一金属层和第二金属层，高反射层1和高反射层2分别代表第一高反射层和第二高反射层，来对本发明技术方案进行说明。\n\n[0043]本发明FPC基板通过在传统FPC堆叠结构铜-PI-铜中加入高反射层1形成铜-PI-高反射层1-铜四层结构FPC基板，或者替代PI层构成铜-高反射层1-铜三层堆叠FPC基板结构。高反射层1的加入保证了FPC基板的高反射特性，同时在刻蚀上层铜结构构成上层金属导线层时，非铜导线区均为高反射层1，当用于微型LED阵列发光背光模组时，可提高反射率。\n\n[0044]本发明最后进一步可以通过传统涂覆高反射层的工艺在铜导线表面制备高反射层2，所获得的FPC基板至少包括铜-高反射层1-铜-高反射层2四层结构，或者铜-PI-高反射层1-铜-高反射层2五层结构，并且可以使高反射层2露出FPC基板上用于与LED阵列电连接的电极焊盘，从而使得整个FPC基板仅在电极焊盘处为非高反射区，有效保证了当本发明FPC基板用于微型LED阵列发光背光模组时微型阵列发光背光模组的反射效率。\n\n[0045]根据本发明驱动基板的具体实施例，本发明还提供了高效的微型LED阵列发光背光模组，主要包括：由下至上顺序层叠的驱动基板、微型LED阵列、荧光膜、扩散片、以及增亮膜，其中驱动基板可以采用本发明前述的驱动基板，例如前述的FPC基板。本发明的微型LED阵列发光背光模组即微型LED面光源的结构可以参考图4，以本发明的驱动基板代替图4中的驱动基板10即可。\n\n[0046]微型LED以阵列形式排布于驱动基板上，微型LED的尺寸可以为100-1000μm，相邻微型LED之间的间距可以为100-2000μm。微型LED阵列可以采用蓝光LED组成阵列。荧光膜以整面覆盖的方式覆盖微型LED阵列和驱动基板表面，扩散片、增亮膜等为背光常见结构，此处不做赘述。\n\n[0047]针对本发明具体驱动基板的具体实施例，本发明还提供了相应的驱动基板的制备方法。参见图8，其为本发明驱动基板的制备方法一较佳实施例的流程图，主要包括：\n\n[0048]制备第一金属层，具体可以为下层铜金属层。\n\n[0049]制备绝缘支撑层，具体可以为PI层。\n\n[0050]制备第一高反射层，具体可以为高反射层1。\n\n[0051]制备第二金属层，具体可以为上层铜金属层。\n\n[0052]分别刻蚀第一金属层和第二金属层形成金属导线图案；具体可以分别刻蚀上下铜线层构成上下导线层，构成电性导线，并通过过孔工艺形成上下导线互联。\n\n[0053]制备第二高反射层，具体可以在第二金属层表面制备高反射层2。\n\n[0054]除去电极焊盘表面的第二高反射层，具体可以通过光刻刻蚀工艺仅保留上层铜线(电极焊盘除外)表面的高反射层2。使得整个驱动基板仅在电极焊盘处为非高反射区，有效保证了所制得驱动基板用于微型LED阵列发光背光模组时的反射效率。\n\n[0055]综上，本发明的驱动基板、制备方法及微型LED阵列发光背光模组解决了微型LED阵列发光背光由于传统高反射层刻蚀工艺误差所造成的电极焊盘边缘禁制区所造成的反射率损失，同时也可以解决传统涂覆高反射层(如白油)反射率有限的问题。\n\n[0056]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10628, 23682, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示装置。\n\n背景技术\n\n[0002]在显示技术领域，液晶显示装置(Liquid Crystal Display，LCD)等平板显示装置已经逐步取代阴极射线管(Cathode Ray Tube，CRT)显示装置。液晶显示装置具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。\n\n[0003]现有市场上的液晶显示装置大部分为背光型液晶显示装置，其包括液晶显示面板及背光模组(backlight module)。通常液晶显示面板由彩膜(Color Filter，CF)基板、薄膜晶体管(Thin Film Transistor，TFT)阵列基板、夹于彩膜基板与薄膜晶体管阵列基板之间的液晶(Liquid Crystal，LC)及密封胶框(Sealant)组成。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，两片玻璃基板中间有许多垂直和水平的细小电线，通过通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。\n\n[0004]随着显示技术的发展，越来越多的应用功能场景下需要更大显示面积的显示装置，传统的具有单块显示面板的显示装置无法满足该要求，由多块显示面板拼接而成的显示装置由此产生。请参阅图1，为现有的一种由两块显示面板拼接而成的显示装置的结构示意图，该显示装置包括间隔设置的两块液晶显示面板100、设于该两块液晶显示面板100之间以及该两块液晶显示面板100外侧的黑矩阵(black matrix，BM)边框200。该显示装置在进行显示时，两块液晶显示面板100能够进行显示，但黑矩阵边框200却无法进行显示，这导致该显示装置的显示的画面中会出现对应黑矩阵边框200的黑线，影响显示的效果，产品的品质较差。\n\n[0005]OLED(Organic Light-Emitting Diode，有机发光二极管)显示器是一种新型的平板显示装置，由于其具有可进行自发光、制备工艺简单、成本低、功耗低、发光亮度高、工作温度适应范围广、体积轻薄、响应速度快、易于实现彩色显示和大屏显示、易于实现和集成电路驱动器向匹配、易于实现柔性显示等优点，具有广阔的应用前景。\n\n[0006]迷你发光二极管(mini LED)显示装置是一种在一个基板上集成微小尺寸的LED阵列作为显示像素来实现图像显示的显示装置，其每一个像素均可定址、单独驱动点亮，属于自发光显示器，其耗电量小，且色彩饱和度接近OLED，很多厂商将其作为目前的研究重点。\n\n发明内容\n\n[0007]本发明的目的在于提供一种显示装置，能够消除拼接显示面板显示画面中的黑线，产品品质较高。\n\n[0008]为实现上述目的，本发明提供一种显示装置，包括拼接显示面板及设于拼接显示面板上方的电致发光显示面板；\n\n[0009]所述拼接显示面板包括间隔设置的多个子显示面板、设于相邻的子显示面板之间的第一边框以及设于多个子显示面板外侧的第二边框；\n\n[0010]所述电致发光显示面板包括衬底及设于衬底上的电致发光层；所述电致发光层在拼接显示面板上的正投影与第一边框及第二边框重叠；\n\n[0011]所述电致发光层包括依次设置的多个电致发光器件。\n\n[0012]所述子显示面板为液晶显示面板；\n\n[0013]所述多个子显示面板呈阵列式排布。\n\n[0014]所述电致发光器件为mini LED。\n\n[0015]所述电致发光器件为OLED。\n\n[0016]所述电致发光显示面板还包括覆盖多个电致发光器件的封装层。\n\n[0017]所述电致发光器件包括红光电致发光器件、绿光电致发光器件及蓝光电致发光器件，在电致发光层中，红光电致发光器件、绿光电致发光器件及蓝光电致发光器件依次交替设置。\n\n[0018]所述电致发光显示面板还包括设于衬底与电致发光层之间的TFT阵列层；所述TFT阵列层在拼接显示面板上的正投影与第一边框及第二边框重叠。\n\n[0019]所述第一边框及第二边框的材料均为黑色矩阵材料。\n\n[0020]所述显示装置还包括设于拼接显示面板与电致发光显示面板之间的第一粘合层、设于电致发光显示面板上方的盖板以及设于电致发光显示面板与盖板之间的第二粘合层。\n\n[0021]所述第一粘合层及第二粘合层的材料均为水胶或光学胶；\n\n[0022]所述盖板的材料为玻璃。\n\n[0023]本发明的有益效果：本发明提供的一种显示装置在拼接显示面板上方设置电致发光显示面板，电致发光显示面板的电致发光层在拼接显示面板上的正投影与拼接显示面板的边框重叠，且电致发光层包括多个电致发光器件，工作时，拼接显示面板的多个子显示面板与电致发光显示面板的多个电致发光器件同时发光从而显示画面，能够消除由于在拼接显示面板中设置边框而在显示画面上产生的黑线，提升显示效果，具有良好的产品品质。\n\n附图说明\n\n[0024]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0025]附图中，\n\n[0026]图1为现有的一种由多块显示面板拼接而成的显示装置的结构示意图；\n\n[0027]图2为本发明的显示装置的第一实施例的结构示意图；\n\n[0028]图3为本发明的显示装置显示画面的示意图；\n\n[0029]图4为本发明的显示装置的第二实施例的结构示意图。\n\n具体实施方式\n\n[0030]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0031]请参阅图2，本发明的显示装置的第一实施例包括拼接显示面板10及设于拼接显示面板10上方的电致发光显示面板20。\n\n[0032]所述拼接显示面板10包括间隔设置的多个子显示面板11、设于相邻的子显示面板11之间的第一边框12以及设于多个子显示面板11外侧的第二边框13。\n\n[0033]所述电致发光显示面板20包括衬底21及设于衬底21上的电致发光层22。所述电致发光层22在拼接显示面板10上的正投影与第一边框12及第二边框13重叠。\n\n[0034]所述电致发光层22包括依次设置的多个电致发光器件221。\n\n[0035]具体地，在本发明的第一实施例中，所述子显示面板11为液晶显示面板。\n\n[0036]具体地，所述多个子显示面板11呈阵列式排布。在图1所示的实施例中，子显示面板11的数量为两个，该两个子显示面板11呈一行两列排布。\n\n[0037]具体地，所述第一边框12及第二边框13的材料均为黑色矩阵材料。\n\n[0038]具体地，所述衬底21的材料可以为玻璃或柔性材料。\n\n[0039]具体地，请参阅图2，所述电致发光显示面板20还包括设于衬底21与电致发光层22之间的TFT阵列层24。所述TFT阵列层24在拼接显示面板10上的正投影与第一边框12及第二边框13重叠。该TFT阵列层24用于驱动电致发光层22中的电致发光器件221发光以进行显示。\n\n[0040]具体地，请参阅图2，在本发明的第一实施例中，所述电致发光器件221包括用于发出红光的红光电致发光器件2211、用于发出绿光的绿光电致发光器件2212及用于发出蓝光的蓝光电致发光器件2213，在电致发光层22中，红光电致发光器件2211、绿光电致发光器件2212及蓝光电致发光器件2213依次交替设置。当然，在本发明的其他实施例中，根据实际的产品需求，所述电致发光器件221还可包括用于发出其他色光的电致发光器件，例如用于发出白光的白光电致发光器件及用于发出黄光的黄光电致发光器件。\n\n[0041]具体地，在本发明的第一实施例中，所述电致发光器件221为mini LED。\n\n[0042]具体地，请参阅图2，所述显示装置还包括设于拼接显示面板10与电致发光显示面板20之间用于将二者粘合的第一粘合层30、设于电致发光显示面板20上方的盖板40以及设于电致发光显示面板20与盖板40之间用于将二者粘合的第二粘合层50。\n\n[0043]进一步地，所述第一粘合层30及第二粘合层50的材料均为水胶或光学胶。所述盖板40的材料为玻璃。在本发明的第一实施例中，所述第一粘合层30及第二粘合层50的材料优选为水胶。\n\n[0044]具体地，本发明的显示装置的第一实施例在进行制作时，首先提供拼接显示面板10，之后提供衬底21并在衬底21上制作TFT阵列层24，而后将多个为mini LED的电致发光器件221绑定(bonding)在形成有TFT阵列层24的衬底21上，形成电致发光层22，从而得到电致发光显示面板20，之后将电致发光显示面板20具有衬底21的一侧与拼接显示面板10的侧面通过水胶贴合，之后再将盖板40通过水胶贴合在电致发光显示面板20远离拼接显示面板10的一侧，即完成制作。\n\n[0045]请参阅图4，本发明的第二实施例与上述第一实施例的区别在于，所述电致发光器件221为OLED。\n\n[0046]进一步地，请参阅图4，在本发明的第二实施例中，所述电致发光显示面板20还包括覆盖多个电致发光器件221的封装层23，用于阻隔外部的水氧侵入多个为OLED的电致发光器件221，提升产品的可靠性及寿命。\n\n[0047]对应的，本发明的显示装置的第二实施例在进行制作时，首先提供拼接显示面板10，之后提供衬底21并在衬底21上制作TFT阵列层24，而后将多个为OLED的电致发光器件221制作在形成有TFT阵列层24的衬底21上，形成电致发光层22，而后在衬底21及电致发光器件221上形成封装层23对多个电致发光器件221进行覆盖，从而得到电致发光显示面板20，之后将电致发光显示面板20具有衬底21的一侧与拼接显示面板10的侧面通过水胶或光学胶贴合，之后再将盖板40通过水胶或光学胶贴合在电致发光显示面板20远离拼接显示面板10的一侧，即完成制作。\n\n[0048]需要说明的是，本发明的显示装置在拼接显示面板10上方设置电致发光显示面板20，电致发光显示面板20的电致发光层22在拼接显示面板10上的正投影与拼接显示面板10的第一边框12及第二边框13重叠，且电致发光层22包括多个电致发光器件221，能够受驱动而发光，从而请参阅图3，本发明的显示装置在工作时，拼接显示面板10的多个子显示面板11发光，使显示装置与多个子显示面板11对应的第一显示区域91显示画面，而电致发光显示面板20的多个电致发光器件221发光，使显示装置与电致发光层22对应的第二显示区92也显示画面，从而显示装置整体的显示画面覆盖该显示装置，相较于现有技术，本发明能够消除由于在拼接显示面板中设置边框而在显示画面上产生的黑线，提升显示效果，具有良好的产品品质。\n\n[0049]综上所述，本发明的显示装置在拼接显示面板上方设置电致发光显示面板，电致发光显示面板的电致发光层在拼接显示面板上的正投影与拼接显示面板的边框重叠，且电致发光层包括多个电致发光器件，工作时，拼接显示面板的多个子显示面板与电致发光显示面板的多个电致发光器件同时发光从而显示画面，能够消除由于在拼接显示面板中设置边框而在显示画面上产生的黑线，提升显示效果，具有良好的产品品质。\n\n[0050]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示装置。\n\n背景技术\n\n[0002]在显示技术领域，液晶显示装置(Liquid Crystal Display，LCD)等平板显示装置已经逐步取代阴极射线管(Cathode Ray Tube，CRT)显示装置。液晶显示装置具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。\n\n[0003]现有市场上的液晶显示装置大部分为背光型液晶显示装置，其包括液晶显示面板及背光模组(backlight module)。通常液晶显示面板由彩膜(Color Filter，CF)基板、薄膜晶体管(Thin Film Transistor，TFT)阵列基板、夹于彩膜基板与薄膜晶体管阵列基板之间的液晶(Liquid Crystal，LC)及密封胶框(Sealant)组成。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，两片玻璃基板中间有许多垂直和水平的细小电线，通过通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。\n\n[0004]随着显示技术的发展，越来越多的应用功能场景下需要更大显示面积的显示装置，传统的具有单块显示面板的显示装置无法满足该要求，由多块显示面板拼接而成的显示装置由此产生。请参阅图1，为现有的一种由两块显示面板拼接而成的显示装置的结构示意图，该显示装置包括间隔设置的两块液晶显示面板100、设于该两块液晶显示面板100之间以及该两块液晶显示面板100外侧的黑矩阵(black matrix，BM)边框200。该显示装置在进行显示时，两块液晶显示面板100能够进行显示，但黑矩阵边框200却无法进行显示，这导致该显示装置的显示的画面中会出现对应黑矩阵边框200的黑线，影响显示的效果，产品的品质较差。\n\n[0005]OLED(Organic Light-Emitting Diode，有机发光二极管)显示器是一种新型的平板显示装置，由于其具有可进行自发光、制备工艺简单、成本低、功耗低、发光亮度高、工作温度适应范围广、体积轻薄、响应速度快、易于实现彩色显示和大屏显示、易于实现和集成电路驱动器向匹配、易于实现柔性显示等优点，具有广阔的应用前景。\n\n[0006]迷你发光二极管(mini LED)显示装置是一种在一个基板上集成微小尺寸的LED阵列作为显示像素来实现图像显示的显示装置，其每一个像素均可定址、单独驱动点亮，属于自发光显示器，其耗电量小，且色彩饱和度接近OLED，很多厂商将其作为目前的研究重点。\n\n发明内容\n\n[0007]本发明的目的在于提供一种显示装置，能够消除拼接显示面板显示画面中的黑线，产品品质较高。\n\n[0008]为实现上述目的，本发明提供一种显示装置，包括拼接显示面板及设于拼接显示面板上方的电致发光显示面板；\n\n[0009]所述拼接显示面板包括间隔设置的多个子显示面板、设于相邻的子显示面板之间的第一边框以及设于多个子显示面板外侧的第二边框；\n\n[0010]所述电致发光显示面板包括衬底及设于衬底上的电致发光层；所述电致发光层在拼接显示面板上的正投影与第一边框及第二边框重叠；\n\n[0011]所述电致发光层包括依次设置的多个电致发光器件。\n\n[0012]所述子显示面板为液晶显示面板；\n\n[0013]所述多个子显示面板呈阵列式排布。\n\n[0014]所述电致发光器件为mini LED。\n\n[0015]所述电致发光器件为OLED。\n\n[0016]所述电致发光显示面板还包括覆盖多个电致发光器件的封装层。\n\n[0017]所述电致发光器件包括红光电致发光器件、绿光电致发光器件及蓝光电致发光器件，在电致发光层中，红光电致发光器件、绿光电致发光器件及蓝光电致发光器件依次交替设置。\n\n[0018]所述电致发光显示面板还包括设于衬底与电致发光层之间的TFT阵列层；所述TFT阵列层在拼接显示面板上的正投影与第一边框及第二边框重叠。\n\n[0019]所述第一边框及第二边框的材料均为黑色矩阵材料。\n\n[0020]所述显示装置还包括设于拼接显示面板与电致发光显示面板之间的第一粘合层、设于电致发光显示面板上方的盖板以及设于电致发光显示面板与盖板之间的第二粘合层。\n\n[0021]所述第一粘合层及第二粘合层的材料均为水胶或光学胶；\n\n[0022]所述盖板的材料为玻璃。\n\n[0023]本发明的有益效果：本发明提供的一种显示装置在拼接显示面板上方设置电致发光显示面板，电致发光显示面板的电致发光层在拼接显示面板上的正投影与拼接显示面板的边框重叠，且电致发光层包括多个电致发光器件，工作时，拼接显示面板的多个子显示面板与电致发光显示面板的多个电致发光器件同时发光从而显示画面，能够消除由于在拼接显示面板中设置边框而在显示画面上产生的黑线，提升显示效果，具有良好的产品品质。\n\n附图说明\n\n[0024]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0025]附图中，\n\n[0026]图1为现有的一种由多块显示面板拼接而成的显示装置的结构示意图；\n\n[0027]图2为本发明的显示装置的第一实施例的结构示意图；\n\n[0028]图3为本发明的显示装置显示画面的示意图；\n\n[0029]图4为本发明的显示装置的第二实施例的结构示意图。\n\n具体实施方式\n\n[0030]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0031]请参阅图2，本发明的显示装置的第一实施例包括拼接显示面板10及设于拼接显示面板10上方的电致发光显示面板20。\n\n[0032]所述拼接显示面板10包括间隔设置的多个子显示面板11、设于相邻的子显示面板11之间的第一边框12以及设于多个子显示面板11外侧的第二边框13。\n\n[0033]所述电致发光显示面板20包括衬底21及设于衬底21上的电致发光层22。所述电致发光层22在拼接显示面板10上的正投影与第一边框12及第二边框13重叠。\n\n[0034]所述电致发光层22包括依次设置的多个电致发光器件221。\n\n[0035]具体地，在本发明的第一实施例中，所述子显示面板11为液晶显示面板。\n\n[0036]具体地，所述多个子显示面板11呈阵列式排布。在图1所示的实施例中，子显示面板11的数量为两个，该两个子显示面板11呈一行两列排布。\n\n[0037]具体地，所述第一边框12及第二边框13的材料均为黑色矩阵材料。\n\n[0038]具体地，所述衬底21的材料可以为玻璃或柔性材料。\n\n[0039]具体地，请参阅图2，所述电致发光显示面板20还包括设于衬底21与电致发光层22之间的TFT阵列层24。所述TFT阵列层24在拼接显示面板10上的正投影与第一边框12及第二边框13重叠。该TFT阵列层24用于驱动电致发光层22中的电致发光器件221发光以进行显示。\n\n[0040]具体地，请参阅图2，在本发明的第一实施例中，所述电致发光器件221包括用于发出红光的红光电致发光器件2211、用于发出绿光的绿光电致发光器件2212及用于发出蓝光的蓝光电致发光器件2213，在电致发光层22中，红光电致发光器件2211、绿光电致发光器件2212及蓝光电致发光器件2213依次交替设置。当然，在本发明的其他实施例中，根据实际的产品需求，所述电致发光器件221还可包括用于发出其他色光的电致发光器件，例如用于发出白光的白光电致发光器件及用于发出黄光的黄光电致发光器件。\n\n[0041]具体地，在本发明的第一实施例中，所述电致发光器件221为mini LED。\n\n[0042]具体地，请参阅图2，所述显示装置还包括设于拼接显示面板10与电致发光显示面板20之间用于将二者粘合的第一粘合层30、设于电致发光显示面板20上方的盖板40以及设于电致发光显示面板20与盖板40之间用于将二者粘合的第二粘合层50。\n\n[0043]进一步地，所述第一粘合层30及第二粘合层50的材料均为水胶或光学胶。所述盖板40的材料为玻璃。在本发明的第一实施例中，所述第一粘合层30及第二粘合层50的材料优选为水胶。\n\n[0044]具体地，本发明的显示装置的第一实施例在进行制作时，首先提供拼接显示面板10，之后提供衬底21并在衬底21上制作TFT阵列层24，而后将多个为mini LED的电致发光器件221绑定(bonding)在形成有TFT阵列层24的衬底21上，形成电致发光层22，从而得到电致发光显示面板20，之后将电致发光显示面板20具有衬底21的一侧与拼接显示面板10的侧面通过水胶贴合，之后再将盖板40通过水胶贴合在电致发光显示面板20远离拼接显示面板10的一侧，即完成制作。\n\n[0045]请参阅图4，本发明的第二实施例与上述第一实施例的区别在于，所述电致发光器件221为OLED。\n\n[0046]进一步地，请参阅图4，在本发明的第二实施例中，所述电致发光显示面板20还包括覆盖多个电致发光器件221的封装层23，用于阻隔外部的水氧侵入多个为OLED的电致发光器件221，提升产品的可靠性及寿命。\n\n[0047]对应的，本发明的显示装置的第二实施例在进行制作时，首先提供拼接显示面板10，之后提供衬底21并在衬底21上制作TFT阵列层24，而后将多个为OLED的电致发光器件221制作在形成有TFT阵列层24的衬底21上，形成电致发光层22，而后在衬底21及电致发光器件221上形成封装层23对多个电致发光器件221进行覆盖，从而得到电致发光显示面板20，之后将电致发光显示面板20具有衬底21的一侧与拼接显示面板10的侧面通过水胶或光学胶贴合，之后再将盖板40通过水胶或光学胶贴合在电致发光显示面板20远离拼接显示面板10的一侧，即完成制作。\n\n[0048]需要说明的是，本发明的显示装置在拼接显示面板10上方设置电致发光显示面板20，电致发光显示面板20的电致发光层22在拼接显示面板10上的正投影与拼接显示面板10的第一边框12及第二边框13重叠，且电致发光层22包括多个电致发光器件221，能够受驱动而发光，从而请参阅图3，本发明的显示装置在工作时，拼接显示面板10的多个子显示面板11发光，使显示装置与多个子显示面板11对应的第一显示区域91显示画面，而电致发光显示面板20的多个电致发光器件221发光，使显示装置与电致发光层22对应的第二显示区92也显示画面，从而显示装置整体的显示画面覆盖该显示装置，相较于现有技术，本发明能够消除由于在拼接显示面板中设置边框而在显示画面上产生的黑线，提升显示效果，具有良好的产品品质。\n\n[0049]综上所述，本发明的显示装置在拼接显示面板上方设置电致发光显示面板，电致发光显示面板的电致发光层在拼接显示面板上的正投影与拼接显示面板的边框重叠，且电致发光层包括多个电致发光器件，工作时，拼接显示面板的多个子显示面板与电致发光显示面板的多个电致发光器件同时发光从而显示画面，能够消除由于在拼接显示面板中设置边框而在显示画面上产生的黑线，提升显示效果，具有良好的产品品质。\n\n[0050]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10629, 23683, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种液晶显示器。\n\n背景技术\n\n[0002]随着显示技术的发展，液晶显示装置(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。现有市场上的液晶显示装置大部分为背光型液晶显示装置，其包括液晶显示面板及背光模组(Backlight Module)。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，两片玻璃基板中间有许多垂直和水平的细小电线，通过通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。\n\n[0003]随着可穿戴应用设备如智能眼镜、智能手表等的逐渐兴起，显示行业对可挠曲显示器件的需求也不断增加。有机发光二极管显示器件(Organic Light Emitting Display，OLED)具有自发光不需背光源、厚度薄、边框窄等特点。面对OLED的竞争，传统TFT液晶显示屏加上LED面光源背光显示技术可以有效弥补自身的不足。\n\n[0004]然而，现有技术的LED面光源背光显示器包括LED面光源及显示面板，所述LED面光源与显示面板LED通过柔性电路板组件(Flexible Printed Circuit Assembly，FPCA)形成电性连接，而面光源的LED驱动IC通常设置在柔性电路板组件上，柔性电路板组件需要额外设置一个连接器以使LED驱动IC与LED面光源上的LED芯片电性连接，这无疑压缩了柔性电路板组件的空间，且LED驱动IC与LED面光源上的LED芯片电性连接的走线难度较高，上述问题大大增加了制作成本。\n\n发明内容\n\n[0005]本发明的目的在于提供一种液晶显示器，能够降低MINI LED驱动IC与MINI LED芯片电性连接的走线难度，降低制作成本，有效提高经济效益和产能。\n\n[0006]为实现上述目的，本发明提供了一种液晶显示器，包括显示面板及为显示面板提供背光的MINI LED面光源；\n\n[0007]所述MINI LED面光源包括MINI LED基板、设于所述MINI LED基板一侧面的数个MINI LED芯片、设于所述MINI LED基板另一侧面的MINI LED驱动IC以及覆盖所述数个MINILED芯片的荧光膜；所述显示面板具有柔性电路板组件；所述MINI LED基板与所述柔性电路板组件电性连接，所述MINI LED驱动IC驱动所述数个MINI LED芯片发光。\n\n[0008]所述MINI LED面光源还包括设于所述荧光膜和所述显示面板之间的光学膜片组。\n\n[0009]所述显示面板具有显示驱动IC，所述MINI LED驱动IC通过所述柔性电路板组件与所述显示驱动IC电性连接以接收显示驱动IC的信号。\n\n[0010]所述显示驱动IC具有MINI LED面光源的驱动算法，所述MINI LED面光源的驱动算法根据显示画面计算出一组背光系数，通过所述柔性电路板组件将背光系数传输到所述MINI LED驱动IC，从而控制数个MINI LED芯片的亮度。\n\n[0011]所述显示面板具有电路主板IC，所述MINI LED驱动IC通过所述柔性电路板组件与所述电路主板IC电性连接以接收所述电路主板IC的信号。\n\n[0012]所述电路主板IC具有MINI LED面光源的驱动算法，所述MINI LED面光源的驱动算法根据显示画面计算出一组背光系数，通过所述柔性电路板组件将背光系数传输到所述MINI LED驱动IC，从而控制数个MINI LED芯片的亮度。\n\n[0013]所述显示面板为COG显示面板，所述显示面板包括显示区及位于所述显示区外围的非显示区，所述非显示区设有显示驱动IC，所述显示驱动IC与所述柔性电路板组件电性连接。\n\n[0014]所述显示面板为COF显示面板，所述显示面板包括显示区及位于所述显示区外围的非显示区，所述非显示区具有覆晶薄膜，所述覆晶薄膜设有显示驱动IC，所述显示驱动IC通过所述覆晶薄膜与所述柔性电路板组件电性连接。\n\n[0015]所述MINI LED基板包括面光源显示区及位于所述面光源显示区外围的面光源非显示区，所述面光源非显示区包括与所述MINI LED驱动IC电性连接的面光源接口，所述面光源接口与所述柔性电路板组件电性连接。\n\n[0016]所述面光源接口通过连接器、焊接或热压与所述柔性电路板组件电性连接。\n\n[0017]本发明的有益效果：本发明提供的一种液晶显示器，包括MINI LED基板、设于所述MINI LED基板一侧面的数个MINI LED芯片、设于所述MINI LED基板另一侧面的MINI LED驱动IC以及覆盖所述数个MINI LED芯片的荧光膜，所述MINI LED驱动IC驱动所述数个MINILED芯片发光，相比于现有技术来说，不需要将MINI LED驱动IC设置在柔性电路板组件上，节省了一个连接器，避免压缩柔性电路板组件的设计空间，同时有效减小MINI LED驱动IC与所述数个MINI LED芯片电性连接的走线难度，降低了制作成本。\n\n附图说明\n\n[0018]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0019]附图中，\n\n[0020]图1为本发明的液晶显示器的示意图；\n\n[0021]图2为本发明的液晶显示器的正面示意图；\n\n[0022]图3为本发明的液晶显示器的显示面板的第一实施例的示意图；\n\n[0023]图4为本发明的液晶显示器的显示面板的第二实施例的示意图；\n\n[0024]图5为本发明的液晶显示器的MINI LED面光源的驱动算法的第一实施例的示意图；\n\n[0025]图6为本发明的液晶显示器的MINI LED面光源的驱动算法的第二实施例的示意图。\n\n具体实施方式\n\n[0026]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0027]请参阅图1至图2，本发明提供一种液晶显示器，包括显示面板2及为显示面板2提供背光的MINI LED面光源1；\n\n[0028]所述MINI LED面光源1包括MINI LED基板11、设于所述MINI LED基板11一侧面的数个MINI LED芯片12、设于所述MINI LED基板11另一侧面的MINI LED驱动IC14以及覆盖所述数个MINI LED芯片12的荧光膜13；所述显示面板2具有柔性电路板组件3；所述MINI LED基板11与所述柔性电路板组件(Flexible Printed Circuit Assembly，FPCA)3电性连接，所述MINI LED驱动IC14驱动所述数个MINI LED芯片12发光，使得所述MINI LED驱动IC14便于电性连接所述数个MINI LED芯片12，有效减小MINI LED驱动IC14与所述数个MINI LED芯片12电性连接的走线难度，且相比于现有技术来说，节省了一个连接器，降低了制作成本。\n\n[0029]具体地，所述显示面板2设于所述荧光膜13远离所述数个MINI LED芯片12的一侧。\n\n[0030]具体地，所述MINI LED基板11靠近和远离所述数个MINI LED芯片12的两面均设置有走线，所述MINI LED驱动IC14与所述数个MINI LED芯片12通过所述走线以形成电性连接。\n\n[0031]具体地，所述MINI LED面光源1还包括设于所述荧光膜13和所述显示面板2之间的光学膜片组15。可选地，所述光学膜片组15包括增亮膜片与扩散膜片等，可以提高所述MINILED面光源1的亮度和发光均匀性。\n\n[0032]具体地，所述MINI LED基板11包括面光源显示区及位于所述面光源显示区外围的面光源非显示区，所述面光源非显示区包括与所述MINI LED驱动IC14电性连接的面光源接口111，所述面光源接口111通过连接器、焊接或热压与所述柔性电路板组件3电性连接，所述面光源接口111与所述柔性电路板组件3电性连接，所述MINI LED驱动IC14通过所述面光源接口111与所述柔性电路板组件3电性连接。\n\n[0033]具体地，所述面光源接口111包括面光源电源接口及数据接口。\n\n[0034]具体地，所述面光源接口111通过所述走线从而与所述MINI LED驱动IC14电性连接。\n\n[0035]具体地，所述数个MINI LED芯片12呈阵列排布。\n\n[0036]具体地，如图3所示，为本发明的液晶显示器的显示面板2的第一实施例的示意图，所述显示面板2为COG(Chip On Glass，即芯片搭载在玻璃基板上)显示面板，所述显示面板2包括显示区21及位于所述显示区21外围的非显示区22，所述非显示区22设有显示驱动IC23，所述显示驱动IC23用于对所述显示面板2进行显示驱动，所述显示驱动IC23与所述柔性电路板组件3电性连接。\n\n[0037]具体地，如图4所示，为本发明的液晶显示器的显示面板2的第二实施例的示意图，所述显示面板2为COF(Chip On Film，即覆晶薄膜)显示面板，所述显示面板2包括显示区21及位于所述显示区21外围的非显示区22，所述非显示区22具有覆晶薄膜4，所述覆晶薄膜4具有显示驱动IC23，所述显示驱动IC23用于对所述显示面板2进行显示驱动。由于所述显示驱动IC23设置在所述覆晶薄膜4上，因此所述显示面板2的非显示区22较小，故能够实现显示面板2的超窄边框设计，使得液晶显示器达到超窄边框设计的目的。进一步地，所述显示驱动IC23通过所述非显示区22的覆晶薄膜4与所述柔性电路板组件3电性连接。\n\n[0038]具体地，如图5所示，所述MINI LED驱动IC14通过所述柔性电路板组件3与所述显示驱动IC23电性连接以接收显示驱动IC23的信号。进一步地，所述显示驱动IC23具有MINILED面光源的驱动算法，所述MINI LED面光源的驱动算法根据显示画面计算出一组背光系数，通过所述数据接口将背光系数传输到所述MINI LED驱动IC14，从而控制数个MINI LED芯片12的亮度。\n\n[0039]具体地，如图6所示，所述显示面板2具有电路主板IC，所述MINI LED驱动IC14通过所述柔性电路板组件3与所述电路主板IC电性连接以接收所述电路主板IC的信号。所述电路主板IC具有MINI LED面光源的驱动算法，所述MINI LED面光源的驱动算法根据显示画面计算出一组背光系数，通过所述数据接口将背光系数传输到所述MINI LED驱动IC14，从而控制数个MINI LED芯片12的亮度。优选地，所述面光源接口111通过连接器与所述柔性电路板组件3电性连接。\n\n[0040]综上所述，本发明的液晶显示器包括MINI LED基板、设于所述MINI LED基板一侧面的数个MINI LED芯片、设于所述MINI LED基板另一侧面的MINI LED驱动IC以及覆盖所述数个MINI LED芯片的荧光膜，所述MINI LED驱动IC驱动所述数个MINI LED芯片发光，相比于现有技术来说，不需要将MINI LED驱动IC设置在柔性电路板组件上，节省了一个连接器，避免压缩柔性电路板组件的设计空间，同时有效减小MINI LED驱动IC与所述数个MINI LED芯片电性连接的走线难度，降低了制作成本。\n\n[0041]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种液晶显示器。\n\n背景技术\n\n[0002]随着显示技术的发展，液晶显示装置(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。现有市场上的液晶显示装置大部分为背光型液晶显示装置，其包括液晶显示面板及背光模组(Backlight Module)。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，两片玻璃基板中间有许多垂直和水平的细小电线，通过通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。\n\n[0003]随着可穿戴应用设备如智能眼镜、智能手表等的逐渐兴起，显示行业对可挠曲显示器件的需求也不断增加。有机发光二极管显示器件(Organic Light Emitting Display，OLED)具有自发光不需背光源、厚度薄、边框窄等特点。面对OLED的竞争，传统TFT液晶显示屏加上LED面光源背光显示技术可以有效弥补自身的不足。\n\n[0004]然而，现有技术的LED面光源背光显示器包括LED面光源及显示面板，所述LED面光源与显示面板LED通过柔性电路板组件(Flexible Printed Circuit Assembly，FPCA)形成电性连接，而面光源的LED驱动IC通常设置在柔性电路板组件上，柔性电路板组件需要额外设置一个连接器以使LED驱动IC与LED面光源上的LED芯片电性连接，这无疑压缩了柔性电路板组件的空间，且LED驱动IC与LED面光源上的LED芯片电性连接的走线难度较高，上述问题大大增加了制作成本。\n\n发明内容\n\n[0005]本发明的目的在于提供一种液晶显示器，能够降低MINI LED驱动IC与MINI LED芯片电性连接的走线难度，降低制作成本，有效提高经济效益和产能。\n\n[0006]为实现上述目的，本发明提供了一种液晶显示器，包括显示面板及为显示面板提供背光的MINI LED面光源；\n\n[0007]所述MINI LED面光源包括MINI LED基板、设于所述MINI LED基板一侧面的数个MINI LED芯片、设于所述MINI LED基板另一侧面的MINI LED驱动IC以及覆盖所述数个MINILED芯片的荧光膜；所述显示面板具有柔性电路板组件；所述MINI LED基板与所述柔性电路板组件电性连接，所述MINI LED驱动IC驱动所述数个MINI LED芯片发光。\n\n[0008]所述MINI LED面光源还包括设于所述荧光膜和所述显示面板之间的光学膜片组。\n\n[0009]所述显示面板具有显示驱动IC，所述MINI LED驱动IC通过所述柔性电路板组件与所述显示驱动IC电性连接以接收显示驱动IC的信号。\n\n[0010]所述显示驱动IC具有MINI LED面光源的驱动算法，所述MINI LED面光源的驱动算法根据显示画面计算出一组背光系数，通过所述柔性电路板组件将背光系数传输到所述MINI LED驱动IC，从而控制数个MINI LED芯片的亮度。\n\n[0011]所述显示面板具有电路主板IC，所述MINI LED驱动IC通过所述柔性电路板组件与所述电路主板IC电性连接以接收所述电路主板IC的信号。\n\n[0012]所述电路主板IC具有MINI LED面光源的驱动算法，所述MINI LED面光源的驱动算法根据显示画面计算出一组背光系数，通过所述柔性电路板组件将背光系数传输到所述MINI LED驱动IC，从而控制数个MINI LED芯片的亮度。\n\n[0013]所述显示面板为COG显示面板，所述显示面板包括显示区及位于所述显示区外围的非显示区，所述非显示区设有显示驱动IC，所述显示驱动IC与所述柔性电路板组件电性连接。\n\n[0014]所述显示面板为COF显示面板，所述显示面板包括显示区及位于所述显示区外围的非显示区，所述非显示区具有覆晶薄膜，所述覆晶薄膜设有显示驱动IC，所述显示驱动IC通过所述覆晶薄膜与所述柔性电路板组件电性连接。\n\n[0015]所述MINI LED基板包括面光源显示区及位于所述面光源显示区外围的面光源非显示区，所述面光源非显示区包括与所述MINI LED驱动IC电性连接的面光源接口，所述面光源接口与所述柔性电路板组件电性连接。\n\n[0016]所述面光源接口通过连接器、焊接或热压与所述柔性电路板组件电性连接。\n\n[0017]本发明的有益效果：本发明提供的一种液晶显示器，包括MINI LED基板、设于所述MINI LED基板一侧面的数个MINI LED芯片、设于所述MINI LED基板另一侧面的MINI LED驱动IC以及覆盖所述数个MINI LED芯片的荧光膜，所述MINI LED驱动IC驱动所述数个MINILED芯片发光，相比于现有技术来说，不需要将MINI LED驱动IC设置在柔性电路板组件上，节省了一个连接器，避免压缩柔性电路板组件的设计空间，同时有效减小MINI LED驱动IC与所述数个MINI LED芯片电性连接的走线难度，降低了制作成本。\n\n附图说明\n\n[0018]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0019]附图中，\n\n[0020]图1为本发明的液晶显示器的示意图；\n\n[0021]图2为本发明的液晶显示器的正面示意图；\n\n[0022]图3为本发明的液晶显示器的显示面板的第一实施例的示意图；\n\n[0023]图4为本发明的液晶显示器的显示面板的第二实施例的示意图；\n\n[0024]图5为本发明的液晶显示器的MINI LED面光源的驱动算法的第一实施例的示意图；\n\n[0025]图6为本发明的液晶显示器的MINI LED面光源的驱动算法的第二实施例的示意图。\n\n具体实施方式\n\n[0026]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0027]请参阅图1至图2，本发明提供一种液晶显示器，包括显示面板2及为显示面板2提供背光的MINI LED面光源1；\n\n[0028]所述MINI LED面光源1包括MINI LED基板11、设于所述MINI LED基板11一侧面的数个MINI LED芯片12、设于所述MINI LED基板11另一侧面的MINI LED驱动IC14以及覆盖所述数个MINI LED芯片12的荧光膜13；所述显示面板2具有柔性电路板组件3；所述MINI LED基板11与所述柔性电路板组件(Flexible Printed Circuit Assembly，FPCA)3电性连接，所述MINI LED驱动IC14驱动所述数个MINI LED芯片12发光，使得所述MINI LED驱动IC14便于电性连接所述数个MINI LED芯片12，有效减小MINI LED驱动IC14与所述数个MINI LED芯片12电性连接的走线难度，且相比于现有技术来说，节省了一个连接器，降低了制作成本。\n\n[0029]具体地，所述显示面板2设于所述荧光膜13远离所述数个MINI LED芯片12的一侧。\n\n[0030]具体地，所述MINI LED基板11靠近和远离所述数个MINI LED芯片12的两面均设置有走线，所述MINI LED驱动IC14与所述数个MINI LED芯片12通过所述走线以形成电性连接。\n\n[0031]具体地，所述MINI LED面光源1还包括设于所述荧光膜13和所述显示面板2之间的光学膜片组15。可选地，所述光学膜片组15包括增亮膜片与扩散膜片等，可以提高所述MINILED面光源1的亮度和发光均匀性。\n\n[0032]具体地，所述MINI LED基板11包括面光源显示区及位于所述面光源显示区外围的面光源非显示区，所述面光源非显示区包括与所述MINI LED驱动IC14电性连接的面光源接口111，所述面光源接口111通过连接器、焊接或热压与所述柔性电路板组件3电性连接，所述面光源接口111与所述柔性电路板组件3电性连接，所述MINI LED驱动IC14通过所述面光源接口111与所述柔性电路板组件3电性连接。\n\n[0033]具体地，所述面光源接口111包括面光源电源接口及数据接口。\n\n[0034]具体地，所述面光源接口111通过所述走线从而与所述MINI LED驱动IC14电性连接。\n\n[0035]具体地，所述数个MINI LED芯片12呈阵列排布。\n\n[0036]具体地，如图3所示，为本发明的液晶显示器的显示面板2的第一实施例的示意图，所述显示面板2为COG(Chip On Glass，即芯片搭载在玻璃基板上)显示面板，所述显示面板2包括显示区21及位于所述显示区21外围的非显示区22，所述非显示区22设有显示驱动IC23，所述显示驱动IC23用于对所述显示面板2进行显示驱动，所述显示驱动IC23与所述柔性电路板组件3电性连接。\n\n[0037]具体地，如图4所示，为本发明的液晶显示器的显示面板2的第二实施例的示意图，所述显示面板2为COF(Chip On Film，即覆晶薄膜)显示面板，所述显示面板2包括显示区21及位于所述显示区21外围的非显示区22，所述非显示区22具有覆晶薄膜4，所述覆晶薄膜4具有显示驱动IC23，所述显示驱动IC23用于对所述显示面板2进行显示驱动。由于所述显示驱动IC23设置在所述覆晶薄膜4上，因此所述显示面板2的非显示区22较小，故能够实现显示面板2的超窄边框设计，使得液晶显示器达到超窄边框设计的目的。进一步地，所述显示驱动IC23通过所述非显示区22的覆晶薄膜4与所述柔性电路板组件3电性连接。\n\n[0038]具体地，如图5所示，所述MINI LED驱动IC14通过所述柔性电路板组件3与所述显示驱动IC23电性连接以接收显示驱动IC23的信号。进一步地，所述显示驱动IC23具有MINILED面光源的驱动算法，所述MINI LED面光源的驱动算法根据显示画面计算出一组背光系数，通过所述数据接口将背光系数传输到所述MINI LED驱动IC14，从而控制数个MINI LED芯片12的亮度。\n\n[0039]具体地，如图6所示，所述显示面板2具有电路主板IC，所述MINI LED驱动IC14通过所述柔性电路板组件3与所述电路主板IC电性连接以接收所述电路主板IC的信号。所述电路主板IC具有MINI LED面光源的驱动算法，所述MINI LED面光源的驱动算法根据显示画面计算出一组背光系数，通过所述数据接口将背光系数传输到所述MINI LED驱动IC14，从而控制数个MINI LED芯片12的亮度。优选地，所述面光源接口111通过连接器与所述柔性电路板组件3电性连接。\n\n[0040]综上所述，本发明的液晶显示器包括MINI LED基板、设于所述MINI LED基板一侧面的数个MINI LED芯片、设于所述MINI LED基板另一侧面的MINI LED驱动IC以及覆盖所述数个MINI LED芯片的荧光膜，所述MINI LED驱动IC驱动所述数个MINI LED芯片发光，相比于现有技术来说，不需要将MINI LED驱动IC设置在柔性电路板组件上，节省了一个连接器，避免压缩柔性电路板组件的设计空间，同时有效减小MINI LED驱动IC与所述数个MINI LED芯片电性连接的走线难度，降低了制作成本。\n\n[0041]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10630, 23684, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种面光源背光模组及液晶显示面板。\n\n背景技术\n\n[0002]随着显示技术的发展，液晶显示装置(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。现有市场上的液晶显示装置大部分为背光型液晶显示装置，其包括液晶显示面板及背光模组(Backlight Module)。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，两片玻璃基板中间有许多垂直和水平的细小电线，通过通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。由于液晶显示面板本身不发光，需要借由背光模组提供的光源来正常显示影像，因此，背光模组成为液晶显示装置的关键组件之一。背光模组依照光源入射位置的不同分成侧入式背光模组与直下式背光模组两种。\n\n[0003]如图1和图2所示，现有技术中存在一种直下式背光模组，其采用阵列式LED面光源，该直下式背光模组包括LED基板100、LED发光芯片200、荧光膜300、扩散片400及增亮膜片500，由于LED光接近朗伯型分布，中心亮度较高，周围亮度较低，在直下式背光模组发光过程中极易产生亮度不均的现象。目前人们多采用扩散片混光或者在荧光膜中加入散射雾度粒子混光，但膜层的加入会降低整体面光源的穿透率，影响面光源的整体亮度，荧光膜中雾度粒子也无法达到较好的混光效果。\n\n发明内容\n\n[0004]本发明的目的在于提供一种面光源背光模组，其面光源的混光效果较好，能够实现均匀发光，保证面光源的亮度的均一性。\n\n[0005]本发明的目的还在于提供一种液晶显示面板，厚度较薄且具有较佳的色彩饱和度。\n\n[0006]为实现上述目的，本发明提供了一种面光源背光模组，包括Mini LED基板、间隔设于所述Mini LED基板上的数个Mini LED芯片以及覆盖所述数个Mini LED芯片的荧光膜；\n\n[0007]所述荧光膜远离所述数个Mini LED芯片一侧的表面设有数个微结构。\n\n[0008]所述微结构的形状为朝Mini LED芯片一侧凹陷的不完整球状。\n\n[0009]所述形状为不完整球状的微结构的曲率半径为50μm～1000μm，所述Mini LED芯片与微结构底面的距离为150μm～250μm，相邻两个微结构之间的间距为700μm～1500μm，所述微结构的长度为100μm～1000μm。\n\n[0010]通过压印或蚀刻工艺将平整的荧光膜表面形成具有混光作用的微结构。\n\n[0011]所述微结构对应Mini LED芯片设置。\n\n[0012]所述数个微结构分别位于所述数个Mini LED芯片正上方。\n\n[0013]每一微结构覆盖对应的Mini LED芯片。\n\n[0014]所述Mini LED基板为刚性电路板或柔性电路板。\n\n[0015]所述数个Mini LED芯片呈阵列排列均匀地设置在所述Mini LED基板上。\n\n[0016]所述面光源背光模组还包括依次设于所述荧光膜上的扩散片和增亮膜片。\n\n[0017]本发明还提供一种液晶显示面板，包括如上所述的面光源背光模组。\n\n[0018]本发明的有益效果：本发明提供的一种面光源背光模组，包括Mini LED基板、间隔设于所述Mini LED基板上的数个Mini LED芯片以及覆盖所述数个Mini LED芯片的荧光膜，通过在所述荧光膜远离所述数个Mini LED芯片一侧的表面设有数个微结构，使所述数个Mini LED可以实现更大角度的出光，改善面光源背光模组的混光均匀性，达到节省光学膜片即可实现均匀混光的目的，从而提高面光源的穿透率和亮度，同时有利于面光源背光模组的薄化设计。本发明提供的一种液晶显示面板，包括上述面光源背光模组，厚度较薄且具有较佳的色彩饱和度和亮度。\n\n附图说明\n\n[0019]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0020]附图中，\n\n[0021]图1为现有技术的LED面光源的示意图；\n\n[0022]图2为现有技术的直下式背光模组的示意图；\n\n[0023]图3为本发明的面光源背光模组的第一实施例的示意图；\n\n[0024]图4为本发明的面光源背光模组的第二实施例的示意图；\n\n[0025]图5为面光源背光模组的荧光膜表面设有微结构时的正面亮度分布示意图；\n\n[0026]图6为面光源背光模组的荧光膜表面未设置微结构时的正面亮度分布示意图。\n\n具体实施方式\n\n[0027]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0028]请参阅图3，为本发明的面光源背光模组的第一实施例的示意图，包括Mini LED基板10、间隔设于所述Mini LED基板10上的数个Mini LED芯片20以及覆盖所述数个Mini LED芯片20的荧光膜30，所述荧光膜30远离所述数个Mini LED芯片20一侧的表面设有数个微结构31以改善面光源背光模组的混光效果，提升面内亮度的均一性。因此相比于传统的背光模组，不需要在荧光膜30上设置光学膜片，即可实现均匀发光的效果。当然，根据实际使用情况，请参阅图4，为本发明的面光源背光模组的第二实施例的示意图，可在荧光膜30上设置光学膜片组以进一步实现均匀发光，所述光学膜片组包括依次设于荧光膜30上的扩散片40和增亮膜片50，使光能够扩散均匀并在正视角方向聚集。\n\n[0029]具体地，所述微结构31的形状为朝Mini LED芯片20一侧凹陷的不完整球状，能够改变面光源背光模组的Mini LED芯片20的散光特性，达到均匀混光的目的。当然，根据实际使用情况，所述微结构31形状也可为其他具有混光效果的形状。\n\n[0030]具体地，所述形状为不完整球状的微结构31的曲率半径R为50μm～1000μm，所述Mini LED芯片20与微结构31底面的距离D为150μm～250μm，相邻两个微结构31之间的间距G为700μm～1500μm，所述微结构31的长度L为100μm～1000μm。\n\n[0031]具体地，在所述Mini LED基板10上整面涂布形成荧光膜30，通过压印工艺在荧光膜30上利用压印模具将平整的荧光膜30表面压印成具有混光作用的微结构31。也可以通过蚀刻工艺将平整的荧光膜30表面形成具有混光作用的微结构31。\n\n[0032]具体地，所述微结构31对应Mini LED芯片20设置。进一步地，所述数个微结构31分别位于所述数个Mini LED芯片20正上方，且每一微结构31覆盖对应的Mini LED芯片20。\n\n[0033]具体地，所述Mini LED基板10为印刷电路板(Printed Circuit Board，PCB)，进一步地，所述Mini LED基板10为刚性电路板或柔性电路板。当然，根据实际使用情况，所述Mini LED基板10也可为软硬结合板，这并不影响本发明的技术方案的实施。\n\n[0034]具体地，所述Mini LED基板10靠近所述数个Mini LED芯片20一侧的表面设有电路走线(未图示)以及与所述电路走线电性连接且分别对应所述数个Mini LED芯片20的数个焊盘13，每一个焊盘13与对应的Mini LED芯片20电性连接，以实现对所述Mini LED芯片20供电。\n\n[0035]具体地，所述Mini LED芯片20为倒芯结构，每一个Mini LED芯片20包括间隔设置的P极21与N极22，每一个焊盘13包括间隔设置的第一接触点11与第二接触点12，每一个Mini LED芯片20的P极21与N极22分别与对应的焊盘13的第一接触点11与第二接触点12通过锡膏焊接以实现电性连接，从而使得所述Mini LED芯片20发光时，产生的热量能够迅速通过所述焊盘13传导至所述Mini LED基板10，具有良好的散热能力，能够有效避免光猝灭的问题。\n\n[0036]具体地，所述荧光膜30为波长转换膜层，能够实现将短波长蓝光转换为长波长红光和绿光。\n\n[0037]具体地，所述Mini LED基板10靠近所述数个Mini LED芯片20一侧的表面涂布有高反射率材料，有利于提高光线的利用率。优选地，在所述MiniLED基板10的数个焊盘13以外的区域涂布高反射率材料，即所述高反射材料不覆盖所述Mini LED基板10的数个焊盘13，防止Mini LED芯片20与对应电性连接的焊盘13接触不良。\n\n[0038]具体地，所述数个Mini LED芯片20呈阵列排列均匀地设置在所述MiniLED基板10上，有利于实现面光源背光模组的均匀发光。\n\n[0039]图5为所述面光源背光模组的荧光膜30表面设有微结构31时的正面亮度分布示意图，图6为所述面光源背光模组的荧光膜30表面未设置微结构31时的正面亮度分布示意图，图5和图6对应的面光源背光模组均采用5×5的Mini LED发光芯片的阵列结构，其中，MiniLED大小以0620为例，MiniLED正面发光亮度角为120°，形状为不完整球状的微结构31曲率半径R为780μm，长度L为600μm，微结构31高度H为60μm，Mini LED到微结构31底面距离D为240μm，相邻两个微结构31之间的间距G为1150μm。可以看出，图5对应的面光源背光模组的正面亮度均一性明显好于图6对应的面光源背光模组的正面亮度均一性，通过对数据进一步分析，得到图5对应的面光源背光模组的正面亮度均方差为0.12，图6对应的面光源背光模组的正面亮度均方差为0.147，说明荧光膜30有微结构31时正面亮度分布更加均匀。\n\n[0040]基于上述面光源背光模组，本发明还提供一种液晶显示面板，包括如上所述的面光源背光模组。\n\n[0041]综上所述，本发明的面光源背光模组包括Mini LED基板、间隔设于所述Mini LED基板上的数个Mini LED芯片以及覆盖所述数个Mini LED芯片的荧光膜，通过在所述荧光膜远离所述数个Mini LED芯片一侧的表面设有数个微结构，使所述数个Mini LED可以实现更大角度的出光，改善面光源背光模组的混光均匀性，达到节省光学膜片即可实现均匀混光的目的，从而提高面光源的穿透率和亮度，同时有利于面光源背光模组的薄化设计。本发明的液晶显示面板包括上述面光源背光模组，厚度较薄且具有较佳的色彩饱和度和亮度。\n\n[0042]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种面光源背光模组及液晶显示面板。\n\n背景技术\n\n[0002]随着显示技术的发展，液晶显示装置(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。现有市场上的液晶显示装置大部分为背光型液晶显示装置，其包括液晶显示面板及背光模组(Backlight Module)。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，两片玻璃基板中间有许多垂直和水平的细小电线，通过通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。由于液晶显示面板本身不发光，需要借由背光模组提供的光源来正常显示影像，因此，背光模组成为液晶显示装置的关键组件之一。背光模组依照光源入射位置的不同分成侧入式背光模组与直下式背光模组两种。\n\n[0003]如图1和图2所示，现有技术中存在一种直下式背光模组，其采用阵列式LED面光源，该直下式背光模组包括LED基板100、LED发光芯片200、荧光膜300、扩散片400及增亮膜片500，由于LED光接近朗伯型分布，中心亮度较高，周围亮度较低，在直下式背光模组发光过程中极易产生亮度不均的现象。目前人们多采用扩散片混光或者在荧光膜中加入散射雾度粒子混光，但膜层的加入会降低整体面光源的穿透率，影响面光源的整体亮度，荧光膜中雾度粒子也无法达到较好的混光效果。\n\n发明内容\n\n[0004]本发明的目的在于提供一种面光源背光模组，其面光源的混光效果较好，能够实现均匀发光，保证面光源的亮度的均一性。\n\n[0005]本发明的目的还在于提供一种液晶显示面板，厚度较薄且具有较佳的色彩饱和度。\n\n[0006]为实现上述目的，本发明提供了一种面光源背光模组，包括Mini LED基板、间隔设于所述Mini LED基板上的数个Mini LED芯片以及覆盖所述数个Mini LED芯片的荧光膜；\n\n[0007]所述荧光膜远离所述数个Mini LED芯片一侧的表面设有数个微结构。\n\n[0008]所述微结构的形状为朝Mini LED芯片一侧凹陷的不完整球状。\n\n[0009]所述形状为不完整球状的微结构的曲率半径为50μm～1000μm，所述Mini LED芯片与微结构底面的距离为150μm～250μm，相邻两个微结构之间的间距为700μm～1500μm，所述微结构的长度为100μm～1000μm。\n\n[0010]通过压印或蚀刻工艺将平整的荧光膜表面形成具有混光作用的微结构。\n\n[0011]所述微结构对应Mini LED芯片设置。\n\n[0012]所述数个微结构分别位于所述数个Mini LED芯片正上方。\n\n[0013]每一微结构覆盖对应的Mini LED芯片。\n\n[0014]所述Mini LED基板为刚性电路板或柔性电路板。\n\n[0015]所述数个Mini LED芯片呈阵列排列均匀地设置在所述Mini LED基板上。\n\n[0016]所述面光源背光模组还包括依次设于所述荧光膜上的扩散片和增亮膜片。\n\n[0017]本发明还提供一种液晶显示面板，包括如上所述的面光源背光模组。\n\n[0018]本发明的有益效果：本发明提供的一种面光源背光模组，包括Mini LED基板、间隔设于所述Mini LED基板上的数个Mini LED芯片以及覆盖所述数个Mini LED芯片的荧光膜，通过在所述荧光膜远离所述数个Mini LED芯片一侧的表面设有数个微结构，使所述数个Mini LED可以实现更大角度的出光，改善面光源背光模组的混光均匀性，达到节省光学膜片即可实现均匀混光的目的，从而提高面光源的穿透率和亮度，同时有利于面光源背光模组的薄化设计。本发明提供的一种液晶显示面板，包括上述面光源背光模组，厚度较薄且具有较佳的色彩饱和度和亮度。\n\n附图说明\n\n[0019]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0020]附图中，\n\n[0021]图1为现有技术的LED面光源的示意图；\n\n[0022]图2为现有技术的直下式背光模组的示意图；\n\n[0023]图3为本发明的面光源背光模组的第一实施例的示意图；\n\n[0024]图4为本发明的面光源背光模组的第二实施例的示意图；\n\n[0025]图5为面光源背光模组的荧光膜表面设有微结构时的正面亮度分布示意图；\n\n[0026]图6为面光源背光模组的荧光膜表面未设置微结构时的正面亮度分布示意图。\n\n具体实施方式\n\n[0027]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0028]请参阅图3，为本发明的面光源背光模组的第一实施例的示意图，包括Mini LED基板10、间隔设于所述Mini LED基板10上的数个Mini LED芯片20以及覆盖所述数个Mini LED芯片20的荧光膜30，所述荧光膜30远离所述数个Mini LED芯片20一侧的表面设有数个微结构31以改善面光源背光模组的混光效果，提升面内亮度的均一性。因此相比于传统的背光模组，不需要在荧光膜30上设置光学膜片，即可实现均匀发光的效果。当然，根据实际使用情况，请参阅图4，为本发明的面光源背光模组的第二实施例的示意图，可在荧光膜30上设置光学膜片组以进一步实现均匀发光，所述光学膜片组包括依次设于荧光膜30上的扩散片40和增亮膜片50，使光能够扩散均匀并在正视角方向聚集。\n\n[0029]具体地，所述微结构31的形状为朝Mini LED芯片20一侧凹陷的不完整球状，能够改变面光源背光模组的Mini LED芯片20的散光特性，达到均匀混光的目的。当然，根据实际使用情况，所述微结构31形状也可为其他具有混光效果的形状。\n\n[0030]具体地，所述形状为不完整球状的微结构31的曲率半径R为50μm～1000μm，所述Mini LED芯片20与微结构31底面的距离D为150μm～250μm，相邻两个微结构31之间的间距G为700μm～1500μm，所述微结构31的长度L为100μm～1000μm。\n\n[0031]具体地，在所述Mini LED基板10上整面涂布形成荧光膜30，通过压印工艺在荧光膜30上利用压印模具将平整的荧光膜30表面压印成具有混光作用的微结构31。也可以通过蚀刻工艺将平整的荧光膜30表面形成具有混光作用的微结构31。\n\n[0032]具体地，所述微结构31对应Mini LED芯片20设置。进一步地，所述数个微结构31分别位于所述数个Mini LED芯片20正上方，且每一微结构31覆盖对应的Mini LED芯片20。\n\n[0033]具体地，所述Mini LED基板10为印刷电路板(Printed Circuit Board，PCB)，进一步地，所述Mini LED基板10为刚性电路板或柔性电路板。当然，根据实际使用情况，所述Mini LED基板10也可为软硬结合板，这并不影响本发明的技术方案的实施。\n\n[0034]具体地，所述Mini LED基板10靠近所述数个Mini LED芯片20一侧的表面设有电路走线(未图示)以及与所述电路走线电性连接且分别对应所述数个Mini LED芯片20的数个焊盘13，每一个焊盘13与对应的Mini LED芯片20电性连接，以实现对所述Mini LED芯片20供电。\n\n[0035]具体地，所述Mini LED芯片20为倒芯结构，每一个Mini LED芯片20包括间隔设置的P极21与N极22，每一个焊盘13包括间隔设置的第一接触点11与第二接触点12，每一个Mini LED芯片20的P极21与N极22分别与对应的焊盘13的第一接触点11与第二接触点12通过锡膏焊接以实现电性连接，从而使得所述Mini LED芯片20发光时，产生的热量能够迅速通过所述焊盘13传导至所述Mini LED基板10，具有良好的散热能力，能够有效避免光猝灭的问题。\n\n[0036]具体地，所述荧光膜30为波长转换膜层，能够实现将短波长蓝光转换为长波长红光和绿光。\n\n[0037]具体地，所述Mini LED基板10靠近所述数个Mini LED芯片20一侧的表面涂布有高反射率材料，有利于提高光线的利用率。优选地，在所述MiniLED基板10的数个焊盘13以外的区域涂布高反射率材料，即所述高反射材料不覆盖所述Mini LED基板10的数个焊盘13，防止Mini LED芯片20与对应电性连接的焊盘13接触不良。\n\n[0038]具体地，所述数个Mini LED芯片20呈阵列排列均匀地设置在所述MiniLED基板10上，有利于实现面光源背光模组的均匀发光。\n\n[0039]图5为所述面光源背光模组的荧光膜30表面设有微结构31时的正面亮度分布示意图，图6为所述面光源背光模组的荧光膜30表面未设置微结构31时的正面亮度分布示意图，图5和图6对应的面光源背光模组均采用5×5的Mini LED发光芯片的阵列结构，其中，MiniLED大小以0620为例，MiniLED正面发光亮度角为120°，形状为不完整球状的微结构31曲率半径R为780μm，长度L为600μm，微结构31高度H为60μm，Mini LED到微结构31底面距离D为240μm，相邻两个微结构31之间的间距G为1150μm。可以看出，图5对应的面光源背光模组的正面亮度均一性明显好于图6对应的面光源背光模组的正面亮度均一性，通过对数据进一步分析，得到图5对应的面光源背光模组的正面亮度均方差为0.12，图6对应的面光源背光模组的正面亮度均方差为0.147，说明荧光膜30有微结构31时正面亮度分布更加均匀。\n\n[0040]基于上述面光源背光模组，本发明还提供一种液晶显示面板，包括如上所述的面光源背光模组。\n\n[0041]综上所述，本发明的面光源背光模组包括Mini LED基板、间隔设于所述Mini LED基板上的数个Mini LED芯片以及覆盖所述数个Mini LED芯片的荧光膜，通过在所述荧光膜远离所述数个Mini LED芯片一侧的表面设有数个微结构，使所述数个Mini LED可以实现更大角度的出光，改善面光源背光模组的混光均匀性，达到节省光学膜片即可实现均匀混光的目的，从而提高面光源的穿透率和亮度，同时有利于面光源背光模组的薄化设计。本发明的液晶显示面板包括上述面光源背光模组，厚度较薄且具有较佳的色彩饱和度和亮度。\n\n[0042]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10631, 23685, '技术领域\n\n[0001]本发明属于液晶显示技术领域，尤其涉及一种面光源及面光源的检测方法。\n\n背景技术\n\n[0002]随着可穿戴应用设备如智能眼镜、智能手表等的逐渐兴起，显示行业对可挠曲显示器件的需求也不断增加。有机发光二极管显示器件(Organic Light Emitting Display，OLED)具有自发光不需背光源、厚度薄、视角广、反应速度快等特点，从而具有可挠曲显示的天然优势。面对柔性OLED的竞争，传统的液晶显示技术也逐渐采用柔性衬底往柔性、曲面等方向进行突破，传统的LED灯源由于尺寸和结构的限制，已然不能用于柔性液晶显示面板。\n\n[0003]另外，由于显示器件的屏幕逐渐往超窄边框方向发展，要求液晶面板的背光尽可能的少占用边框的空间，传统的侧入式背光技术由于设置在液晶面板的侧面，加上配备的散热结构等器件，使得侧入式背光技术的液晶面板不能实现超窄边框，而传统的直下式背光技术由于背光结构设置在液晶面板的背面，可实现超窄边框，但面临显示器件整体厚度增加的问题。\n\n[0004]如今发展起来的一种新型的背光技术为mini-LED技术，采用直下式背光结构设计，使用尺寸更小的mini-LED芯片替代目前的传统LED灯珠，以电视为例，传统的侧入式背光结构所需要的LED灯珠一般为数十颗，而采用直下式背光结构所需的mini-LED芯片数量将达到数万颗。如此巨量的芯片对于驱动电路走线造成了较大的挑战，一旦设计不当而造成大量mini-LED芯片故障而报废，损失巨大。另外，由于mini-LED芯片排列过于紧密导致难以准确判别失效芯片的位置，整面mini-LED面光源完成后进行检测会因接触电极固化所导致的接触不良等新的影响良率问题。\n\n发明内容\n\n[0005]本发明的目的是提供一种面光源，可简化驱动电路的结构，降低驱动电路的设计难度和发生故障的风险。\n\n[0006]为实现本发明的目的，本发明提供了如下的技术方案：\n\n[0007]第一方面，本发明提供一种面光源，包括驱动基板、驱动电路和多个mini-LED芯片，所述多个mini-LED芯片阵列排布在所述驱动基板上，并与所述驱动基板上设置的所述驱动电路电连接，每个所述mini-LED芯片均与所述驱动电路并联，每个所述mini-LED芯片的电压为所述驱动电路的电压，所述驱动电路提供与所述多个mini-LED芯片数量对应的多份驱动电流。\n\n[0008]其中，所述驱动电路包括相互绝缘的阳极电路和阴极电路，所述阳极电路和所述阴极电路设有相对设置的第一焊盘和第二焊盘，所述mini-LED芯片焊接在所述第一焊盘和所述第二焊盘上。\n\n[0009]一种实施例中，所述驱动基板上设有阵列排布的多个分区，每个所述分区内设有所述阳极电路、所述阴极电路及多个所述mini-LED芯片，所述驱动电路还包括第一总线和第二总线，所述第一总线电连接至每个所述分区的所述阳极电路，所述第二总线电连接至每个所述分区的所述阴极电路。\n\n[0010]其中，所述第一总线和所述第二总线分别设置于所述驱动基板上的不同层结构上，所述驱动基板上还设有过孔，所述第二总线通过所述过孔电连接至所述阴极电路。\n\n[0011]其中，所述驱动基板上层叠设置有荧光层，所述荧光层内设有荧光粉，所述荧光层覆盖所述多个mini-LED芯片，所述多个mini-LED芯片发出的光经所述荧光层内的荧光粉混合后射出。\n\n[0012]其中，所述多个mini-LED芯片为蓝光mini-LED芯片，所述荧光层上设有黄色荧光粉。\n\n[0013]其中，所述荧光层上还层叠设置有扩散层，所述扩散层用于混合所述荧光层射出的光并均匀射出。\n\n[0014]第二方面，本发明实施例提供一种面光源的检测方法，包括驱动基板、电流驱动单元、分析单元、光学面探测器和打件固晶探头，所述分析单元与所述光学面探测器电连接，所述光学面探测器与所述驱动基板相对设置，所述驱动基板上还设有驱动电路，所述电流驱动单元与所述驱动电路电连接，所述面光源的检测方法包括以下步骤：\n\n[0015]所述打件固晶探头将mini-LED芯片转移到所述驱动基板上，使得所述mini-LED芯片与所述驱动电路并联，所述电流驱动单元向所述mini-LED芯片提供驱动电流，以使所述mini-LED芯片发光；\n\n[0016]所述光学面探测器拍摄所述驱动基板上的发光的所述mini-LED芯片，得到所述mini-LED芯片的影像，并将所述mini-LED芯片的影像传送至所述分析单元；\n\n[0017]所述分析单元对比所述mini-LED芯片的影像与预设的理想影像，得出数据差异，并判断所述数据差异是否超出预设阈值，以判断所述mini-LED芯片是否异常。\n\n[0018]其中，还包括同步单元和计数单元，所述同步单元电连接在所述光学面探测器与所述分析单元之间，所述计数单元电连接在所述驱动基板与所述分析单元之间，所述面光源的检测方法还包括以下步骤：\n\n[0019]当所述打件固晶探头转移完成所述mini-LED芯片并离开的瞬间，所述同步单元驱动所述光学面探测器拍摄所述驱动基板上的发光的所述mini-LED芯片；\n\n[0020]所述同步单元将所述mini-LED芯片的影像传送至所述分析单元；\n\n[0021]所述分析单元判断所述mini-LED芯片的影像与预设的理想影像的数据差异未超出预设阈值，判断所述mini-LED芯片正常后，所述计数单元进行一次计数，所述电流驱动单元向所述驱动电路新增一个所述mini-LED芯片所需的驱动电流。\n\n[0022]其中，还包括源基板和报废基板，所述源基板上设有多个所述mini-LED芯片，所述面光源的检测方法还包括以下步骤：\n\n[0023]所述打件固晶探头从所述源基板上拾取所述mini-LED芯片，并转移至所述驱动基板上固定；\n\n[0024]所述分析单元判断所述mini-LED芯片的影像与预设的理想影像的数据差异超出预设阈值，判断所述mini-LED芯片异常后，所述打件固晶探头将异常的所述mini-LED芯片转移至所述报废基板。\n\n[0025]本发明的有益效果：\n\n[0026]本发明提供的一种面光源，通过设置阵列排列的多个mini-LED芯片，每个mini-LED芯片均与驱动电路并联，每个mini-LED芯片的电压为驱动电路的电压，驱动电路提供与多个mini-LED芯片数量对应的多份驱动电流，使得每个mini-LED芯片仅需提供对应的一份驱动电流即可点亮，在面光源上制作不同数量的mini-LED芯片时，调整驱动电流的份数即可，使得驱动电路的结构可简化，降低了驱动电路的设计难度和发生故障的风险。\n\n附图说明\n\n[0027]为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0028]图1是一种实施例的面光源的剖视结构示意图；\n\n[0029]图2是一种实施例的面光源的平面结构示意图；\n\n[0030]图3是图2中A处的局部放大结构示意图；\n\n[0031]图4是一种实施例的面光源的平面结构示意图；\n\n[0032]图5是一种实施例的面光源的检测方法中的器件的布置结构示意图。\n\n具体实施例\n\n[0033]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0034]请参考图1和图4，本发明实施例提供一种面光源，包括驱动基板20、驱动电路和多个mini-LED芯片100，所述多个mini-LED芯片100阵列排布在所述驱动基板20上，并与所述驱动基板20上设置的所述驱动电路电连接，每个所述mini-LED芯片均与所述驱动电路并联，使得每个所述mini-LED芯片的电压为所述驱动电路的电压，所述驱动电路提供与所述多个mini-LED芯片数量对应的多份驱动电流。\n\n[0035]一般而言，面光源上的多个mini-LED芯片100的数量庞大，为便于说明，以相邻的第一芯片101和第二芯片102进行说明，请参考图4，第一芯片101和第二芯片102均与驱动电路并联设置，第一芯片101和第二芯片102两端的电压相等，并等于驱动电路的电压，这样设置，使得驱动每个mini-LED芯片发光仅需提供对应的驱动电流即可。\n\n[0036]因此，本发明通过设置阵列排列的多个mini-LED芯片，每个mini-LED芯片均与驱动电路并联，每个mini-LED芯片的电压为驱动电路的电压，驱动电路提供与多个mini-LED芯片数量对应的多份驱动电流，使得每个mini-LED芯片仅需提供对应的一份驱动电流即可点亮，在面光源上制作不同数量的mini-LED芯片时，调整驱动电流的份数即可，使得驱动电路的结构可简化，降低了驱动电路的设计难度和发生故障的风险。\n\n[0037]驱动基板20可以为印刷电路板(PCB)或柔性电路板(FPC)，使得本发明的面光源即可为传统的液晶显示面板提供背光，也可以用于柔性液晶显示面板，实现柔性、弯曲显示效果。\n\n[0038]mini-LED芯片是一种裸装的芯片，并未进行封装，其目的是尽量减小每个芯片的尺寸，使得驱动基板20上可以设置数量庞大的芯片，提升面光源整体的发光的光亮等效果。本发明不限制mini-LED芯片的尺寸，优选的，mini-LED芯片的长和宽的尺寸范围为100～1000μm，相邻的两个mini-LED芯片的间距为100～2000μm。\n\n[0039]驱动电路可以通过印刷、刻蚀等工艺制作在驱动基板20上，驱动电路的走线的材质可以为铜、银等金属材质，以尽量减小驱动电路本身的阻抗损耗。\n\n[0040]请参考图4，所述驱动电路包括相互绝缘的阳极电路25和阴极电路26，所述阳极电路25和所述阴极电路26设有相对设置的第一焊盘251和第二焊盘252，所述mini-LED芯片焊接在所述第一焊盘251和所述第二焊盘252上。具体的，阳极电路25和阴极电路26之间彼此隔绝设置，第一焊盘251和第二焊盘252的数量与多个mini-LED芯片的总数量相同，第一焊盘251和第二焊盘252之间间隔第一距离，mini-LED芯片的尺寸大于该第一距离，以第一芯片101为例，第一芯片101通过焊接的方式跨接在第一焊盘251和第二焊盘261上，第一芯片101在第一焊盘251和第二焊盘261的两端产生电压，阳极电路25和阴极电路26在第一芯片101处导通，从而产生流过第一芯片101的电流，以点亮第一芯片101，第二芯片102及其他的mini-LED芯片与此类似。本实施例中，阳极电路25和阴极电路26可以设置在整个驱动基板20上。\n\n[0041]请参考图2至图4，一种实施例中，所述驱动基板20上设有阵列排布的多个分区U，每个所述分区U内设有所述阳极电路25、所述阴极电路26及多个所述mini-LED芯片，所述驱动电路还包括第一总线T1和第二总线T2，所述第一总线T1电连接至每个所述分区的所述阳极电路25，所述第二总线T2电连接至每个所述分区的所述阴极电路26。本实施例中，通过设置多个分区，在分区内设置阳极电路25、阴极电路26和mini-LED芯片，进一步简化了驱动电路结构，提升了面光源的整体的可靠性。\n\n[0042]请参考图3，并结合图4，图3是图2中A处的局部放大结构示意图，具体的，以相邻的分区Um和分区Un为例说明，第一总线T1可以设置为竖线，第二总线T2为横线，第一总线T1设置在第二总线T2的上层，两者交叉设置，且两者交叉位置不接触，可通过在第一总线T1和第二总线T2表面涂覆绝缘膜实现两者互相绝缘，第一总线T1与分区Um和分区Un的连接可以使用焊盘结构，自第一总线T1上延伸出一段延伸段作为连接焊盘，与分区Um和分区Un内的阳极电路25连接，第二总线T2与第一总线T1结构类似，也可通过另一延伸段作为连接焊盘连接分区Um和分区Un内的阴极电路26。\n\n[0043]本实施例中，不限制多个分区U的具体尺寸以及相邻的两个分区之间的间隔，每个分区内设置的多个mini-LED芯片的数量也不做限制，当然，当每个分区内设置的mini-LED芯片数量为1个时，本实施例与前一实施例的技术方案基本相同，使得第一总线T1相当于阳极电路25、第二总线T2相当于阴极电路26。\n\n[0044]一种实施例中，所述第一总线T1和所述第二总线T2分别设置于所述驱动基板20上的不同层结构上，所述驱动基板20上还设有过孔，所述第二总线T2通过所述过孔电连接至所述阴极电路26。本实施例中，驱动基板20可以为多层叠加结构，在制作第二总线T2后，在第二总线T2上再叠加一层绝缘材料，在绝缘材料上再制作第一总线T1，这样可以不用在第一总线T1和第二总线T2上涂覆绝缘层，而可直接使用裸露的铜或银等金属制作，由于第二总线T2位于第一总线T1的下层，且被叠加的绝缘材料覆盖，为使第二总线T2与分区内的阴极电路26导通，设置过孔，过孔贯穿叠加的绝缘材料的上下表面，过孔内填充金属材料，实现第二总线通过过孔连接至阴极电路26。可以理解的，驱动基板20可以在相背的上下表面分别设置走线，即第二总线T2设置于驱动基板20的下表面，第一总线T1设置于驱动基板20的上表面，过孔贯穿驱动基板20的上下表面。\n\n[0045]请参考图1，所述驱动基板20上层叠设置有荧光层300，所述荧光层300内设有荧光粉，所述荧光层300覆盖所述多个mini-LED芯片100，所述多个mini-LED芯片100发出的光经所述荧光层300内的荧光粉混合后射出。虽然不使用荧光粉，就能制备出红、黄、绿、蓝、紫等不同颜色的彩色光，但由于这些不同颜色mini-LED芯片的发光效率相差很大，采用荧光粉以后，可以利用某些波段mini-LED芯片发光效率高的优点来制备其他波段的LED，以提高该波段的发光效率，此外，采用荧光粉还可以更精确控制mini-LED芯片发出的光从荧光层300射出后的波长，以及使光色会变得更加柔和或鲜艳，满足不同的应用场合的需要。\n\n[0046]对于液晶显示所使用的背光的面光源而言，需要得到足够亮度以及均匀程度的白光，可通过mini-LED芯片与荧光层300的混合作用得到满足需要的白光，mini-LED芯片发出的光的颜色与荧光层300的荧光粉的颜色通过光的叠加效应得到白光，例如，所述多个mini-LED芯片100为蓝光mini-LED芯片，所述荧光层300上设有黄色荧光粉，即是利用蓝色光与黄色光叠加得到白色光的特性。由此原理，还可设置所述多个mini-LED芯片100为红光mini-LED芯片，所述荧光层300上设有青色荧光粉，以及所述多个mini-LED芯片100为绿光mini-LED芯片，所述荧光层300上设有品红色荧光粉。\n\n[0047]所述荧光层300上还层叠设置有扩散层400，所述扩散层400用于混合所述荧光层300射出的光并均匀射出。所述扩散层400上还可层叠设置有增透层500，所述增透层500用于减少反射光的强度，而增加透射光的强度，使面光源的亮度更高。上述扩散层400和增透层500的具体结构和材质参考现有技术中相关内容即可。\n\n[0048]请参考图5，并结合图1和图4，本发明实施例还提供一种面光源的检测方法，包括驱动基板20、电流驱动单元40、分析单元60、光学面探测器80和打件固晶探头90，所述分析单元50与所述光学面探测器80电连接，所述光学面探测器80与所述驱动基板20相对设置，所述驱动基板20上还设有驱动电路，所述电流驱动单元40与所述驱动电路电连接，所述面光源的检测方法包括以下步骤：\n\n[0049]所述打件固晶探头90将mini-LED芯片转移到所述驱动基板20上，使得所述mini-LED芯片与所述驱动电路并联，所述电流驱动单元40向所述mini-LED芯片提供驱动电流，以使所述mini-LED芯片发光；\n\n[0050]所述光学面探测器80拍摄所述驱动基板20上的发光的所述mini-LED芯片，得到所述mini-LED芯片的影像，并将所述mini-LED芯片的影像传送至所述分析单元60；\n\n[0051]所述分析单元60对比所述mini-LED芯片的影像与预设的理想影像，得出数据差异，并判断所述数据差异是否超出预设阈值，以判断所述mini-LED芯片是否异常。\n\n[0052]通过mini-LED芯片与驱动电路并联，电流驱动单元向mini-LED芯片提供驱动电流，使得mini-LED芯片发光，再通过光学面探测器80拍摄得到影像，分析单元60将该影像与理想影像对比得出数据差异，判断数据差异是否超出预设阈值，即可判断mini-LED芯片是否异常，实现对mini-LED芯片的检测，相对于整面mini-LED面光源完成后进行检测的方案，本实施例能在mini-LED芯片转移到驱动基板20时检测到发生异常的mini-LED芯片，从而替换掉异常的mini-LED芯片，提高了良率。\n\n[0053]预设的理想影像通过光学面探测器80拍摄正常的mini-LED芯片而得到，预设的理想影像储存在分析单元60中，在检测时，分析单元60对实测的影像与预设的理想影像对比，影像上包括有mini-LED芯片的光亮分布图，对比的方式采用对实测影像与理想影像的光亮分布图进行一一对比，并得出光亮分布的数据差异，预设阈值为最大可允许的数据差异范围，一旦数据差异超出预设阈值，则判断mini-LED芯片异常，需替换。\n\n[0054]每个mini-LED芯片都经过上述检测步骤之后，使得驱动基板20上形成的多个mini-LED芯片100均为正常的mini-LED芯片，也即完成了多个mini-LED芯片100在驱动基板20上的设置，后续将该驱动基板20再经过层叠荧光层300等结构，即可制得面光源。\n\n[0055]进一步的，面光源的检测方法中，还包括同步单元70和计数单元50，所述同步单元70电连接在所述光学面探测器80与所述分析单元60之间，所述计数单元50电连接在所述驱动基板20与所述分析单元60之间，所述面光源的检测方法还包括以下步骤：\n\n[0056]当所述打件固晶探头90转移完成所述mini-LED芯片并离开的瞬间，所述同步单元70驱动所述光学面探测器80拍摄所述驱动基板20上的发光的所述mini-LED芯片；\n\n[0057]所述同步单元70将所述mini-LED芯片的影像传送至所述分析单元60；\n\n[0058]所述分析单元60判断所述mini-LED芯片的影像与预设的理想影像的数据差异未超出预设阈值，判断所述mini-LED芯片正常后，所述计数单元50进行一次计数，所述电流驱动单元40向所述驱动电路新增一个所述mini-LED芯片所需的驱动电流。\n\n[0059]同步单元70驱动光学面探测器80启动拍摄，且同步单元70用于传送影像，分析单元60得出mini-LED芯片正常后，计数单元计数，同时电流驱动单元40向驱动电路新增一个mini-LED芯片所需的驱动电流，即驱动电路中的驱动电流随着mini-LED芯片的数量增加而线性增加，由于每个mini-LED芯片均为并联，增加的驱动电流仅用于向mini-LED芯片提供电流，保证了驱动电路的电压和电流的一致性。\n\n[0060]电流驱动单元可以包括两个，即电流驱动单元40和另一电流驱动单元40’，两个电流驱动单元为驱动基板20上的驱动电路分别提供阳极电路和阴极电路，多个mini-LED芯片100分别连接到阳极电路和阴极电路，实现电路的导通。\n\n[0061]进一步的，面光源的检测方法还包括源基板10和报废基板30，所述源基板10上设有多个所述mini-LED芯片，所述面光源的检测方法还包括以下步骤：\n\n[0062]所述打件固晶探头90从所述源基板10上拾取所述mini-LED芯片，并转移至所述驱动基板20上固定；\n\n[0063]所述分析单元60判断所述mini-LED芯片的影像与预设的理想影像的数据差异超出预设阈值，判断所述mini-LED芯片异常后，所述打件固晶探头90将异常的所述mini-LED芯片转移至所述报废基板30。\n\n[0064]源基板10提供原始的mini-LED芯片，该原始的mini-LED芯片包含可能异常的mini-LED芯片，通过检测，检出异常的mini-LED芯片后，转移至报废基板30，然后再从源基板10上转移mini-LED芯片到驱动基板20上，直至驱动基板20上的mini-LED芯片正常，如此，可保证检测步骤连续下去，避免停工。\n\n[0065]以上所揭露的仅为本发明一种较佳实施例而已，当然不能以此来限定本发明之权利范围，本领域普通技术人员可以理解实现上述实施例的全部或部分流程，并依本发明权利要求所作的等同变化，仍属于发明所涵盖的范围。', '技术领域\n\n[0001]本发明属于液晶显示技术领域，尤其涉及一种面光源及面光源的检测方法。\n\n背景技术\n\n[0002]随着可穿戴应用设备如智能眼镜、智能手表等的逐渐兴起，显示行业对可挠曲显示器件的需求也不断增加。有机发光二极管显示器件(Organic Light Emitting Display，OLED)具有自发光不需背光源、厚度薄、视角广、反应速度快等特点，从而具有可挠曲显示的天然优势。面对柔性OLED的竞争，传统的液晶显示技术也逐渐采用柔性衬底往柔性、曲面等方向进行突破，传统的LED灯源由于尺寸和结构的限制，已然不能用于柔性液晶显示面板。\n\n[0003]另外，由于显示器件的屏幕逐渐往超窄边框方向发展，要求液晶面板的背光尽可能的少占用边框的空间，传统的侧入式背光技术由于设置在液晶面板的侧面，加上配备的散热结构等器件，使得侧入式背光技术的液晶面板不能实现超窄边框，而传统的直下式背光技术由于背光结构设置在液晶面板的背面，可实现超窄边框，但面临显示器件整体厚度增加的问题。\n\n[0004]如今发展起来的一种新型的背光技术为mini-LED技术，采用直下式背光结构设计，使用尺寸更小的mini-LED芯片替代目前的传统LED灯珠，以电视为例，传统的侧入式背光结构所需要的LED灯珠一般为数十颗，而采用直下式背光结构所需的mini-LED芯片数量将达到数万颗。如此巨量的芯片对于驱动电路走线造成了较大的挑战，一旦设计不当而造成大量mini-LED芯片故障而报废，损失巨大。另外，由于mini-LED芯片排列过于紧密导致难以准确判别失效芯片的位置，整面mini-LED面光源完成后进行检测会因接触电极固化所导致的接触不良等新的影响良率问题。\n\n发明内容\n\n[0005]本发明的目的是提供一种面光源，可简化驱动电路的结构，降低驱动电路的设计难度和发生故障的风险。\n\n[0006]为实现本发明的目的，本发明提供了如下的技术方案：\n\n[0007]第一方面，本发明提供一种面光源，包括驱动基板、驱动电路和多个mini-LED芯片，所述多个mini-LED芯片阵列排布在所述驱动基板上，并与所述驱动基板上设置的所述驱动电路电连接，每个所述mini-LED芯片均与所述驱动电路并联，每个所述mini-LED芯片的电压为所述驱动电路的电压，所述驱动电路提供与所述多个mini-LED芯片数量对应的多份驱动电流。\n\n[0008]其中，所述驱动电路包括相互绝缘的阳极电路和阴极电路，所述阳极电路和所述阴极电路设有相对设置的第一焊盘和第二焊盘，所述mini-LED芯片焊接在所述第一焊盘和所述第二焊盘上。\n\n[0009]一种实施例中，所述驱动基板上设有阵列排布的多个分区，每个所述分区内设有所述阳极电路、所述阴极电路及多个所述mini-LED芯片，所述驱动电路还包括第一总线和第二总线，所述第一总线电连接至每个所述分区的所述阳极电路，所述第二总线电连接至每个所述分区的所述阴极电路。\n\n[0010]其中，所述第一总线和所述第二总线分别设置于所述驱动基板上的不同层结构上，所述驱动基板上还设有过孔，所述第二总线通过所述过孔电连接至所述阴极电路。\n\n[0011]其中，所述驱动基板上层叠设置有荧光层，所述荧光层内设有荧光粉，所述荧光层覆盖所述多个mini-LED芯片，所述多个mini-LED芯片发出的光经所述荧光层内的荧光粉混合后射出。\n\n[0012]其中，所述多个mini-LED芯片为蓝光mini-LED芯片，所述荧光层上设有黄色荧光粉。\n\n[0013]其中，所述荧光层上还层叠设置有扩散层，所述扩散层用于混合所述荧光层射出的光并均匀射出。\n\n[0014]第二方面，本发明实施例提供一种面光源的检测方法，包括驱动基板、电流驱动单元、分析单元、光学面探测器和打件固晶探头，所述分析单元与所述光学面探测器电连接，所述光学面探测器与所述驱动基板相对设置，所述驱动基板上还设有驱动电路，所述电流驱动单元与所述驱动电路电连接，所述面光源的检测方法包括以下步骤：\n\n[0015]所述打件固晶探头将mini-LED芯片转移到所述驱动基板上，使得所述mini-LED芯片与所述驱动电路并联，所述电流驱动单元向所述mini-LED芯片提供驱动电流，以使所述mini-LED芯片发光；\n\n[0016]所述光学面探测器拍摄所述驱动基板上的发光的所述mini-LED芯片，得到所述mini-LED芯片的影像，并将所述mini-LED芯片的影像传送至所述分析单元；\n\n[0017]所述分析单元对比所述mini-LED芯片的影像与预设的理想影像，得出数据差异，并判断所述数据差异是否超出预设阈值，以判断所述mini-LED芯片是否异常。\n\n[0018]其中，还包括同步单元和计数单元，所述同步单元电连接在所述光学面探测器与所述分析单元之间，所述计数单元电连接在所述驱动基板与所述分析单元之间，所述面光源的检测方法还包括以下步骤：\n\n[0019]当所述打件固晶探头转移完成所述mini-LED芯片并离开的瞬间，所述同步单元驱动所述光学面探测器拍摄所述驱动基板上的发光的所述mini-LED芯片；\n\n[0020]所述同步单元将所述mini-LED芯片的影像传送至所述分析单元；\n\n[0021]所述分析单元判断所述mini-LED芯片的影像与预设的理想影像的数据差异未超出预设阈值，判断所述mini-LED芯片正常后，所述计数单元进行一次计数，所述电流驱动单元向所述驱动电路新增一个所述mini-LED芯片所需的驱动电流。\n\n[0022]其中，还包括源基板和报废基板，所述源基板上设有多个所述mini-LED芯片，所述面光源的检测方法还包括以下步骤：\n\n[0023]所述打件固晶探头从所述源基板上拾取所述mini-LED芯片，并转移至所述驱动基板上固定；\n\n[0024]所述分析单元判断所述mini-LED芯片的影像与预设的理想影像的数据差异超出预设阈值，判断所述mini-LED芯片异常后，所述打件固晶探头将异常的所述mini-LED芯片转移至所述报废基板。\n\n[0025]本发明的有益效果：\n\n[0026]本发明提供的一种面光源，通过设置阵列排列的多个mini-LED芯片，每个mini-LED芯片均与驱动电路并联，每个mini-LED芯片的电压为驱动电路的电压，驱动电路提供与多个mini-LED芯片数量对应的多份驱动电流，使得每个mini-LED芯片仅需提供对应的一份驱动电流即可点亮，在面光源上制作不同数量的mini-LED芯片时，调整驱动电流的份数即可，使得驱动电路的结构可简化，降低了驱动电路的设计难度和发生故障的风险。\n\n附图说明\n\n[0027]为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0028]图1是一种实施例的面光源的剖视结构示意图；\n\n[0029]图2是一种实施例的面光源的平面结构示意图；\n\n[0030]图3是图2中A处的局部放大结构示意图；\n\n[0031]图4是一种实施例的面光源的平面结构示意图；\n\n[0032]图5是一种实施例的面光源的检测方法中的器件的布置结构示意图。\n\n具体实施例\n\n[0033]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0034]请参考图1和图4，本发明实施例提供一种面光源，包括驱动基板20、驱动电路和多个mini-LED芯片100，所述多个mini-LED芯片100阵列排布在所述驱动基板20上，并与所述驱动基板20上设置的所述驱动电路电连接，每个所述mini-LED芯片均与所述驱动电路并联，使得每个所述mini-LED芯片的电压为所述驱动电路的电压，所述驱动电路提供与所述多个mini-LED芯片数量对应的多份驱动电流。\n\n[0035]一般而言，面光源上的多个mini-LED芯片100的数量庞大，为便于说明，以相邻的第一芯片101和第二芯片102进行说明，请参考图4，第一芯片101和第二芯片102均与驱动电路并联设置，第一芯片101和第二芯片102两端的电压相等，并等于驱动电路的电压，这样设置，使得驱动每个mini-LED芯片发光仅需提供对应的驱动电流即可。\n\n[0036]因此，本发明通过设置阵列排列的多个mini-LED芯片，每个mini-LED芯片均与驱动电路并联，每个mini-LED芯片的电压为驱动电路的电压，驱动电路提供与多个mini-LED芯片数量对应的多份驱动电流，使得每个mini-LED芯片仅需提供对应的一份驱动电流即可点亮，在面光源上制作不同数量的mini-LED芯片时，调整驱动电流的份数即可，使得驱动电路的结构可简化，降低了驱动电路的设计难度和发生故障的风险。\n\n[0037]驱动基板20可以为印刷电路板(PCB)或柔性电路板(FPC)，使得本发明的面光源即可为传统的液晶显示面板提供背光，也可以用于柔性液晶显示面板，实现柔性、弯曲显示效果。\n\n[0038]mini-LED芯片是一种裸装的芯片，并未进行封装，其目的是尽量减小每个芯片的尺寸，使得驱动基板20上可以设置数量庞大的芯片，提升面光源整体的发光的光亮等效果。本发明不限制mini-LED芯片的尺寸，优选的，mini-LED芯片的长和宽的尺寸范围为100～1000μm，相邻的两个mini-LED芯片的间距为100～2000μm。\n\n[0039]驱动电路可以通过印刷、刻蚀等工艺制作在驱动基板20上，驱动电路的走线的材质可以为铜、银等金属材质，以尽量减小驱动电路本身的阻抗损耗。\n\n[0040]请参考图4，所述驱动电路包括相互绝缘的阳极电路25和阴极电路26，所述阳极电路25和所述阴极电路26设有相对设置的第一焊盘251和第二焊盘252，所述mini-LED芯片焊接在所述第一焊盘251和所述第二焊盘252上。具体的，阳极电路25和阴极电路26之间彼此隔绝设置，第一焊盘251和第二焊盘252的数量与多个mini-LED芯片的总数量相同，第一焊盘251和第二焊盘252之间间隔第一距离，mini-LED芯片的尺寸大于该第一距离，以第一芯片101为例，第一芯片101通过焊接的方式跨接在第一焊盘251和第二焊盘261上，第一芯片101在第一焊盘251和第二焊盘261的两端产生电压，阳极电路25和阴极电路26在第一芯片101处导通，从而产生流过第一芯片101的电流，以点亮第一芯片101，第二芯片102及其他的mini-LED芯片与此类似。本实施例中，阳极电路25和阴极电路26可以设置在整个驱动基板20上。\n\n[0041]请参考图2至图4，一种实施例中，所述驱动基板20上设有阵列排布的多个分区U，每个所述分区U内设有所述阳极电路25、所述阴极电路26及多个所述mini-LED芯片，所述驱动电路还包括第一总线T1和第二总线T2，所述第一总线T1电连接至每个所述分区的所述阳极电路25，所述第二总线T2电连接至每个所述分区的所述阴极电路26。本实施例中，通过设置多个分区，在分区内设置阳极电路25、阴极电路26和mini-LED芯片，进一步简化了驱动电路结构，提升了面光源的整体的可靠性。\n\n[0042]请参考图3，并结合图4，图3是图2中A处的局部放大结构示意图，具体的，以相邻的分区Um和分区Un为例说明，第一总线T1可以设置为竖线，第二总线T2为横线，第一总线T1设置在第二总线T2的上层，两者交叉设置，且两者交叉位置不接触，可通过在第一总线T1和第二总线T2表面涂覆绝缘膜实现两者互相绝缘，第一总线T1与分区Um和分区Un的连接可以使用焊盘结构，自第一总线T1上延伸出一段延伸段作为连接焊盘，与分区Um和分区Un内的阳极电路25连接，第二总线T2与第一总线T1结构类似，也可通过另一延伸段作为连接焊盘连接分区Um和分区Un内的阴极电路26。\n\n[0043]本实施例中，不限制多个分区U的具体尺寸以及相邻的两个分区之间的间隔，每个分区内设置的多个mini-LED芯片的数量也不做限制，当然，当每个分区内设置的mini-LED芯片数量为1个时，本实施例与前一实施例的技术方案基本相同，使得第一总线T1相当于阳极电路25、第二总线T2相当于阴极电路26。\n\n[0044]一种实施例中，所述第一总线T1和所述第二总线T2分别设置于所述驱动基板20上的不同层结构上，所述驱动基板20上还设有过孔，所述第二总线T2通过所述过孔电连接至所述阴极电路26。本实施例中，驱动基板20可以为多层叠加结构，在制作第二总线T2后，在第二总线T2上再叠加一层绝缘材料，在绝缘材料上再制作第一总线T1，这样可以不用在第一总线T1和第二总线T2上涂覆绝缘层，而可直接使用裸露的铜或银等金属制作，由于第二总线T2位于第一总线T1的下层，且被叠加的绝缘材料覆盖，为使第二总线T2与分区内的阴极电路26导通，设置过孔，过孔贯穿叠加的绝缘材料的上下表面，过孔内填充金属材料，实现第二总线通过过孔连接至阴极电路26。可以理解的，驱动基板20可以在相背的上下表面分别设置走线，即第二总线T2设置于驱动基板20的下表面，第一总线T1设置于驱动基板20的上表面，过孔贯穿驱动基板20的上下表面。\n\n[0045]请参考图1，所述驱动基板20上层叠设置有荧光层300，所述荧光层300内设有荧光粉，所述荧光层300覆盖所述多个mini-LED芯片100，所述多个mini-LED芯片100发出的光经所述荧光层300内的荧光粉混合后射出。虽然不使用荧光粉，就能制备出红、黄、绿、蓝、紫等不同颜色的彩色光，但由于这些不同颜色mini-LED芯片的发光效率相差很大，采用荧光粉以后，可以利用某些波段mini-LED芯片发光效率高的优点来制备其他波段的LED，以提高该波段的发光效率，此外，采用荧光粉还可以更精确控制mini-LED芯片发出的光从荧光层300射出后的波长，以及使光色会变得更加柔和或鲜艳，满足不同的应用场合的需要。\n\n[0046]对于液晶显示所使用的背光的面光源而言，需要得到足够亮度以及均匀程度的白光，可通过mini-LED芯片与荧光层300的混合作用得到满足需要的白光，mini-LED芯片发出的光的颜色与荧光层300的荧光粉的颜色通过光的叠加效应得到白光，例如，所述多个mini-LED芯片100为蓝光mini-LED芯片，所述荧光层300上设有黄色荧光粉，即是利用蓝色光与黄色光叠加得到白色光的特性。由此原理，还可设置所述多个mini-LED芯片100为红光mini-LED芯片，所述荧光层300上设有青色荧光粉，以及所述多个mini-LED芯片100为绿光mini-LED芯片，所述荧光层300上设有品红色荧光粉。\n\n[0047]所述荧光层300上还层叠设置有扩散层400，所述扩散层400用于混合所述荧光层300射出的光并均匀射出。所述扩散层400上还可层叠设置有增透层500，所述增透层500用于减少反射光的强度，而增加透射光的强度，使面光源的亮度更高。上述扩散层400和增透层500的具体结构和材质参考现有技术中相关内容即可。\n\n[0048]请参考图5，并结合图1和图4，本发明实施例还提供一种面光源的检测方法，包括驱动基板20、电流驱动单元40、分析单元60、光学面探测器80和打件固晶探头90，所述分析单元50与所述光学面探测器80电连接，所述光学面探测器80与所述驱动基板20相对设置，所述驱动基板20上还设有驱动电路，所述电流驱动单元40与所述驱动电路电连接，所述面光源的检测方法包括以下步骤：\n\n[0049]所述打件固晶探头90将mini-LED芯片转移到所述驱动基板20上，使得所述mini-LED芯片与所述驱动电路并联，所述电流驱动单元40向所述mini-LED芯片提供驱动电流，以使所述mini-LED芯片发光；\n\n[0050]所述光学面探测器80拍摄所述驱动基板20上的发光的所述mini-LED芯片，得到所述mini-LED芯片的影像，并将所述mini-LED芯片的影像传送至所述分析单元60；\n\n[0051]所述分析单元60对比所述mini-LED芯片的影像与预设的理想影像，得出数据差异，并判断所述数据差异是否超出预设阈值，以判断所述mini-LED芯片是否异常。\n\n[0052]通过mini-LED芯片与驱动电路并联，电流驱动单元向mini-LED芯片提供驱动电流，使得mini-LED芯片发光，再通过光学面探测器80拍摄得到影像，分析单元60将该影像与理想影像对比得出数据差异，判断数据差异是否超出预设阈值，即可判断mini-LED芯片是否异常，实现对mini-LED芯片的检测，相对于整面mini-LED面光源完成后进行检测的方案，本实施例能在mini-LED芯片转移到驱动基板20时检测到发生异常的mini-LED芯片，从而替换掉异常的mini-LED芯片，提高了良率。\n\n[0053]预设的理想影像通过光学面探测器80拍摄正常的mini-LED芯片而得到，预设的理想影像储存在分析单元60中，在检测时，分析单元60对实测的影像与预设的理想影像对比，影像上包括有mini-LED芯片的光亮分布图，对比的方式采用对实测影像与理想影像的光亮分布图进行一一对比，并得出光亮分布的数据差异，预设阈值为最大可允许的数据差异范围，一旦数据差异超出预设阈值，则判断mini-LED芯片异常，需替换。\n\n[0054]每个mini-LED芯片都经过上述检测步骤之后，使得驱动基板20上形成的多个mini-LED芯片100均为正常的mini-LED芯片，也即完成了多个mini-LED芯片100在驱动基板20上的设置，后续将该驱动基板20再经过层叠荧光层300等结构，即可制得面光源。\n\n[0055]进一步的，面光源的检测方法中，还包括同步单元70和计数单元50，所述同步单元70电连接在所述光学面探测器80与所述分析单元60之间，所述计数单元50电连接在所述驱动基板20与所述分析单元60之间，所述面光源的检测方法还包括以下步骤：\n\n[0056]当所述打件固晶探头90转移完成所述mini-LED芯片并离开的瞬间，所述同步单元70驱动所述光学面探测器80拍摄所述驱动基板20上的发光的所述mini-LED芯片；\n\n[0057]所述同步单元70将所述mini-LED芯片的影像传送至所述分析单元60；\n\n[0058]所述分析单元60判断所述mini-LED芯片的影像与预设的理想影像的数据差异未超出预设阈值，判断所述mini-LED芯片正常后，所述计数单元50进行一次计数，所述电流驱动单元40向所述驱动电路新增一个所述mini-LED芯片所需的驱动电流。\n\n[0059]同步单元70驱动光学面探测器80启动拍摄，且同步单元70用于传送影像，分析单元60得出mini-LED芯片正常后，计数单元计数，同时电流驱动单元40向驱动电路新增一个mini-LED芯片所需的驱动电流，即驱动电路中的驱动电流随着mini-LED芯片的数量增加而线性增加，由于每个mini-LED芯片均为并联，增加的驱动电流仅用于向mini-LED芯片提供电流，保证了驱动电路的电压和电流的一致性。\n\n[0060]电流驱动单元可以包括两个，即电流驱动单元40和另一电流驱动单元40’，两个电流驱动单元为驱动基板20上的驱动电路分别提供阳极电路和阴极电路，多个mini-LED芯片100分别连接到阳极电路和阴极电路，实现电路的导通。\n\n[0061]进一步的，面光源的检测方法还包括源基板10和报废基板30，所述源基板10上设有多个所述mini-LED芯片，所述面光源的检测方法还包括以下步骤：\n\n[0062]所述打件固晶探头90从所述源基板10上拾取所述mini-LED芯片，并转移至所述驱动基板20上固定；\n\n[0063]所述分析单元60判断所述mini-LED芯片的影像与预设的理想影像的数据差异超出预设阈值，判断所述mini-LED芯片异常后，所述打件固晶探头90将异常的所述mini-LED芯片转移至所述报废基板30。\n\n[0064]源基板10提供原始的mini-LED芯片，该原始的mini-LED芯片包含可能异常的mini-LED芯片，通过检测，检出异常的mini-LED芯片后，转移至报废基板30，然后再从源基板10上转移mini-LED芯片到驱动基板20上，直至驱动基板20上的mini-LED芯片正常，如此，可保证检测步骤连续下去，避免停工。\n\n[0065]以上所揭露的仅为本发明一种较佳实施例而已，当然不能以此来限定本发明之权利范围，本领域普通技术人员可以理解实现上述实施例的全部或部分流程，并依本发明权利要求所作的等同变化，仍属于发明所涵盖的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10632, 23686, '技术领域\n\n[0001]本发明涉及显示技术领域，具体涉及一种紫外固化系统以及紫外固化设备。\n\n背景技术\n\n[0002]在OLED(Organic Light-Emitting Diode,有机发光二极管)显示面板的制造过程中需要对封框胶进行固化，以使得防止外界的水氧进入OLED显示面板，造成OLED显示面板失效。其中，紫外固化对光斑的辐照强度以及照度均匀性要求较高。\n\n[0003]然而，现有的紫外固化装置在进行紫外固化的过程中，不仅能量利用率低，并且，照度均匀性不佳，很难达到工艺上的要求，因此，有必要提出一种紫外固化系统以及紫外固化装置。\n\n发明内容\n\n[0004]本发明实施例提供一种紫外固化系统以及紫外固化设备，不仅能够提高能量利用率，并且还可以提高照度均匀性。\n\n[0005]本发明提供了一种紫外固化系统，包括：\n\n[0006]承载台，所述承载台具有一用于支撑显示面板的支撑面；\n\n[0007]发光单元，所述发光单元朝向所述支撑面设置；其中，在所述发光单元的出光方向上，还设置有光学透镜，所述光学透镜用于将所述发光单元发出的光线汇集至所述显示面板上。\n\n[0008]可选的，根据本发明一优选实施例，所述发光单元包括一基板以及设置在所述基板上的多个光源；\n\n[0009]其中，所述光学透镜与所述光源一一对应，且所述光学透镜贴合设置在所述光源上。\n\n[0010]可选的，根据本发明一优选实施例，所述多个光源呈阵列排布在所述基板上。\n\n[0011]可选的，根据本发明一优选实施例，还包括多个驱动单元，所述多个驱动单元与所述多个光源一一对应，且所述驱动单元与所述光源连接，任一所述驱动单元用于控制任一所述光源单独发光。\n\n[0012]可选的，根据本发明一优选实施例，所述光源为发光二极管。\n\n[0013]可选的，根据本发明一优选实施例，所述光源采用垂直封装结构。\n\n[0014]可选的，根据本发明一优选实施例，所述光源的尺寸为8微米\n\n[0015]可选的，根据本发明一优选实施例，所述光学透镜为准直透镜。\n\n[0016]可选的，根据本发明一优选实施例，所述光学透镜的材料为耐紫外硅胶、耐紫外碳酸聚酯或聚甲基丙烯酸甲酯。\n\n[0017]相应的，本发明还提供了一种紫外固化设备，包括本发明任一实施例的紫外固化系统。\n\n[0018]本发明提供的紫外固化系统以及紫外固化设备，包括：承载台，承载台具有一用于支撑显示面板的支撑面；发光单元，发光单元朝向支撑面设置；其中，在发光单元的出光方向上，还设置有光学透镜，光学透镜用于将发光单元发出的光线汇集至显示面板上。发光单元的出光方向上设置光学透镜，能够使发光单元发出的光线汇集至显示面板上，不仅能够提高能量利用率，并且还可以提高照度均匀性。\n\n附图说明\n\n[0019]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0020]图1为本发明实施例提供的紫外固化系统的截面示意图；\n\n[0021]图2为本发明实施例提供的发光单元的平面示意图；\n\n[0022]图3为本发明实施例提供的光源的截面示意图；\n\n[0023]图4～图6为本发明一优选实施例提供的光源的截面示意图。\n\n具体实施方式\n\n[0024]下面详细描述本发明的实施方式，所述实施方式的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。\n\n[0025]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0026]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0027]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0028]下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0029]请参阅图1，图1为本发明实施例提供的紫外固化系统的截面示意图。\n\n[0030]本发明实施例提供一种紫外固化系统，包括：\n\n[0031]承载台10，承载台10具有一用于支撑显示面板20的支撑面101；\n\n[0032]发光单元30，发光单元30朝向支撑面101设置；其中，在发光单元30的出光方向上，还设置有光学透镜40，光学透镜40用于将发光单元30发出的光线汇集至显示面板20上。\n\n[0033]具体的，该承载台10可以用于承载待固化的显示面板20，并且，该承载台10上具有一支撑面101，支撑面101上可以设置有多个用于支撑固定显示面板20的支撑物(图中未示出)。而显示面板20可以是形成有OLED器件的显示面板，该OLED器件可以包括阳极、有机发光层以及阴极(图中均未示出)等等。并且，该显示面板上可以形成有封装胶，具体固化时，将该显示面板传送至承载台10的支撑面101上，然后，开启发光单元30，使发光单元30发出如紫外线的光线照射在显示面板上，待封装胶彻底固化后，紫外固化进程完成，随后进行其余对显示面板的加工。\n\n[0034]发光单元30指的是可以发射出紫外光的单元，并且，发光单元30的出光方向朝向承载台10的支撑面101设置，使得发光单元30发出的光线照射在显示面板20上。其中，在发光单元30的出光方向上还设置有光学透镜40，该光学透镜40可以将发光单元30发出的光线汇集至显示面板20上。\n\n[0035]其中，该光学透镜40可以为准直透镜，即，在一些实施例中，光学透镜40为准直透镜。例如，当该光学透镜40为准直透镜时，发光单元30的发出的光线经过该光学透镜40后，散射的入射光经光学透镜40的作用后，成为平行的出射光，使得更多的光线照射在显示面板20需要固化的位置上，因此，减小了能量的损耗，极大的提升了能量利用率。\n\n[0036]在本实施例中，在发光单元30的出光方向上设置光学透镜40，能够使发光单元30发出的光线汇集至显示面板20上，不仅能够提高能量利用率，并且还可以提高照度均匀性。\n\n[0037]紧接着，请结合参阅图2以及图3，图2为本发明实施例提供的发光单元的平面示意图，图3为本发明实施例提供的光源的截面示意图。\n\n[0038]优选的，在一些实施例中，发光单元30包括一基板301以及设置在基板301上的多个光源302；\n\n[0039]其中，光学透镜40与光源302一一对应，且光学透镜40贴合设置在光源302上。\n\n[0040]具体的，该基板301用于装载多个光源302。其中，光学透镜40与多个光源302一一对应，即，在本实施例中，该紫外固化系统具有多个光学透镜40，光学透镜40的数量等于光源302的数量，并且，一个光学透镜40对应一个光源302。需要说明的是，光学透镜40设置在光源302上，使得光源302发出的光线通过光学透镜40汇集至显示面板20上。该光源302可以为发光二极管。\n\n[0041]即，可选的，在一些实施例中，光源302为发光二极管。在此，为了解决光源302的散热问题，因此，在本实施例中，对发光二极管的封装方式采用垂直封装，即，光源302采用垂直封装结构，这样不仅能够提高光源302的发光效率，并且能够提高光源302散热性能。\n\n[0042]还需要说明的是，由光学理论知识可知，当相邻光源302之间的间距d和光源302与显示面板20的距离z成以下关系时，固化表面光斑强度最佳，关系式如下：其中，d表示相邻光源302之间的间距，z表示光源302与显示面板20的距离，θ0.5表示光源302发光强度值为轴向强度值一半时的发光方向与发光轴向(法线)的夹角。\n\n[0043]优选的，光源302的尺寸为8微米。\n\n[0044]优选的，多个光源302呈阵列排布在基板301上。需要说明的是，多个光源302采用阵列排布的方式设置在基板301上，这样便于光源302的设置，并且可以保证相邻光源302之间的间距相等，以便于调节相邻光源302之间的间距和光源302与显示面板20的距离，从而使得该紫外固化系统的固化效果最好，即，固化表面光斑强度最佳。相邻光源302之间的间距和光源302与显示面板20的距离的关系，请参阅前面实施例，在此不再赘述。\n\n[0045]进一步的，请继续参阅图3，优选的，在一些实施例中，该紫外固化系统还包括多个驱动单元50，多个驱动单元50与多个光源302一一对应，且驱动单元50与光源302连接，任一驱动单元50用于控制任一光源302单独发光。\n\n[0046]比如，当需要实现特殊形状固化时，驱动单元50为需要打开的光源302提供电压，以使得这部分光源302工作，从而实现固化需求，如图4、图5或者图6所示，具体根据实际情况而定。当其中一个光源302或者其中一个驱动单元50损坏时，不会影响其他正常工作的光源302或者驱动单元50。在维修时，仅需更换损坏的器件即可，不需要更换整个设备。而且，相较于现有的紫外固化系统而言，本实施例中提供的紫外固化系统，在实际紫外固化的过程中，省去了遮光掩膜的步骤。即，不需要因为紫外固化的图案的变化而频繁的更换掩膜板，一方面，提高了生产效率，另一方面，减小了生产成本。\n\n[0047]在本实例中，通过设置多个驱动单元50，在紫外固化的过程中，可以根据实际固化需求打开或闭合光源302，从而实现多种固化需求。并且，任一驱动单元50可以单独控制任一光源302的发光，在实现不同形状固化时，不需要进行掩膜这一步骤，因此，不仅可以节省生产成本，并且，能够提高生产效率。\n\n[0048]优选的，光学透镜40的材料为耐紫外硅胶、耐紫外碳酸聚酯或聚甲基丙烯酸甲酯。\n\n[0049]相应的，本发明还提供一种紫外固化设备，包括本发明任一实施例提供的紫外固化系统。\n\n[0050]以上对本发明实施例提供的紫外固化系统以及紫外固化设备进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明。同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。', '技术领域\n\n[0001]本发明涉及显示技术领域，具体涉及一种紫外固化系统以及紫外固化设备。\n\n背景技术\n\n[0002]在OLED(Organic Light-Emitting Diode,有机发光二极管)显示面板的制造过程中需要对封框胶进行固化，以使得防止外界的水氧进入OLED显示面板，造成OLED显示面板失效。其中，紫外固化对光斑的辐照强度以及照度均匀性要求较高。\n\n[0003]然而，现有的紫外固化装置在进行紫外固化的过程中，不仅能量利用率低，并且，照度均匀性不佳，很难达到工艺上的要求，因此，有必要提出一种紫外固化系统以及紫外固化装置。\n\n发明内容\n\n[0004]本发明实施例提供一种紫外固化系统以及紫外固化设备，不仅能够提高能量利用率，并且还可以提高照度均匀性。\n\n[0005]本发明提供了一种紫外固化系统，包括：\n\n[0006]承载台，所述承载台具有一用于支撑显示面板的支撑面；\n\n[0007]发光单元，所述发光单元朝向所述支撑面设置；其中，在所述发光单元的出光方向上，还设置有光学透镜，所述光学透镜用于将所述发光单元发出的光线汇集至所述显示面板上。\n\n[0008]可选的，根据本发明一优选实施例，所述发光单元包括一基板以及设置在所述基板上的多个光源；\n\n[0009]其中，所述光学透镜与所述光源一一对应，且所述光学透镜贴合设置在所述光源上。\n\n[0010]可选的，根据本发明一优选实施例，所述多个光源呈阵列排布在所述基板上。\n\n[0011]可选的，根据本发明一优选实施例，还包括多个驱动单元，所述多个驱动单元与所述多个光源一一对应，且所述驱动单元与所述光源连接，任一所述驱动单元用于控制任一所述光源单独发光。\n\n[0012]可选的，根据本发明一优选实施例，所述光源为发光二极管。\n\n[0013]可选的，根据本发明一优选实施例，所述光源采用垂直封装结构。\n\n[0014]可选的，根据本发明一优选实施例，所述光源的尺寸为8微米\n\n[0015]可选的，根据本发明一优选实施例，所述光学透镜为准直透镜。\n\n[0016]可选的，根据本发明一优选实施例，所述光学透镜的材料为耐紫外硅胶、耐紫外碳酸聚酯或聚甲基丙烯酸甲酯。\n\n[0017]相应的，本发明还提供了一种紫外固化设备，包括本发明任一实施例的紫外固化系统。\n\n[0018]本发明提供的紫外固化系统以及紫外固化设备，包括：承载台，承载台具有一用于支撑显示面板的支撑面；发光单元，发光单元朝向支撑面设置；其中，在发光单元的出光方向上，还设置有光学透镜，光学透镜用于将发光单元发出的光线汇集至显示面板上。发光单元的出光方向上设置光学透镜，能够使发光单元发出的光线汇集至显示面板上，不仅能够提高能量利用率，并且还可以提高照度均匀性。\n\n附图说明\n\n[0019]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0020]图1为本发明实施例提供的紫外固化系统的截面示意图；\n\n[0021]图2为本发明实施例提供的发光单元的平面示意图；\n\n[0022]图3为本发明实施例提供的光源的截面示意图；\n\n[0023]图4～图6为本发明一优选实施例提供的光源的截面示意图。\n\n具体实施方式\n\n[0024]下面详细描述本发明的实施方式，所述实施方式的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。\n\n[0025]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0026]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0027]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0028]下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0029]请参阅图1，图1为本发明实施例提供的紫外固化系统的截面示意图。\n\n[0030]本发明实施例提供一种紫外固化系统，包括：\n\n[0031]承载台10，承载台10具有一用于支撑显示面板20的支撑面101；\n\n[0032]发光单元30，发光单元30朝向支撑面101设置；其中，在发光单元30的出光方向上，还设置有光学透镜40，光学透镜40用于将发光单元30发出的光线汇集至显示面板20上。\n\n[0033]具体的，该承载台10可以用于承载待固化的显示面板20，并且，该承载台10上具有一支撑面101，支撑面101上可以设置有多个用于支撑固定显示面板20的支撑物(图中未示出)。而显示面板20可以是形成有OLED器件的显示面板，该OLED器件可以包括阳极、有机发光层以及阴极(图中均未示出)等等。并且，该显示面板上可以形成有封装胶，具体固化时，将该显示面板传送至承载台10的支撑面101上，然后，开启发光单元30，使发光单元30发出如紫外线的光线照射在显示面板上，待封装胶彻底固化后，紫外固化进程完成，随后进行其余对显示面板的加工。\n\n[0034]发光单元30指的是可以发射出紫外光的单元，并且，发光单元30的出光方向朝向承载台10的支撑面101设置，使得发光单元30发出的光线照射在显示面板20上。其中，在发光单元30的出光方向上还设置有光学透镜40，该光学透镜40可以将发光单元30发出的光线汇集至显示面板20上。\n\n[0035]其中，该光学透镜40可以为准直透镜，即，在一些实施例中，光学透镜40为准直透镜。例如，当该光学透镜40为准直透镜时，发光单元30的发出的光线经过该光学透镜40后，散射的入射光经光学透镜40的作用后，成为平行的出射光，使得更多的光线照射在显示面板20需要固化的位置上，因此，减小了能量的损耗，极大的提升了能量利用率。\n\n[0036]在本实施例中，在发光单元30的出光方向上设置光学透镜40，能够使发光单元30发出的光线汇集至显示面板20上，不仅能够提高能量利用率，并且还可以提高照度均匀性。\n\n[0037]紧接着，请结合参阅图2以及图3，图2为本发明实施例提供的发光单元的平面示意图，图3为本发明实施例提供的光源的截面示意图。\n\n[0038]优选的，在一些实施例中，发光单元30包括一基板301以及设置在基板301上的多个光源302；\n\n[0039]其中，光学透镜40与光源302一一对应，且光学透镜40贴合设置在光源302上。\n\n[0040]具体的，该基板301用于装载多个光源302。其中，光学透镜40与多个光源302一一对应，即，在本实施例中，该紫外固化系统具有多个光学透镜40，光学透镜40的数量等于光源302的数量，并且，一个光学透镜40对应一个光源302。需要说明的是，光学透镜40设置在光源302上，使得光源302发出的光线通过光学透镜40汇集至显示面板20上。该光源302可以为发光二极管。\n\n[0041]即，可选的，在一些实施例中，光源302为发光二极管。在此，为了解决光源302的散热问题，因此，在本实施例中，对发光二极管的封装方式采用垂直封装，即，光源302采用垂直封装结构，这样不仅能够提高光源302的发光效率，并且能够提高光源302散热性能。\n\n[0042]还需要说明的是，由光学理论知识可知，当相邻光源302之间的间距d和光源302与显示面板20的距离z成以下关系时，固化表面光斑强度最佳，关系式如下：其中，d表示相邻光源302之间的间距，z表示光源302与显示面板20的距离，θ0.5表示光源302发光强度值为轴向强度值一半时的发光方向与发光轴向(法线)的夹角。\n\n[0043]优选的，光源302的尺寸为8微米。\n\n[0044]优选的，多个光源302呈阵列排布在基板301上。需要说明的是，多个光源302采用阵列排布的方式设置在基板301上，这样便于光源302的设置，并且可以保证相邻光源302之间的间距相等，以便于调节相邻光源302之间的间距和光源302与显示面板20的距离，从而使得该紫外固化系统的固化效果最好，即，固化表面光斑强度最佳。相邻光源302之间的间距和光源302与显示面板20的距离的关系，请参阅前面实施例，在此不再赘述。\n\n[0045]进一步的，请继续参阅图3，优选的，在一些实施例中，该紫外固化系统还包括多个驱动单元50，多个驱动单元50与多个光源302一一对应，且驱动单元50与光源302连接，任一驱动单元50用于控制任一光源302单独发光。\n\n[0046]比如，当需要实现特殊形状固化时，驱动单元50为需要打开的光源302提供电压，以使得这部分光源302工作，从而实现固化需求，如图4、图5或者图6所示，具体根据实际情况而定。当其中一个光源302或者其中一个驱动单元50损坏时，不会影响其他正常工作的光源302或者驱动单元50。在维修时，仅需更换损坏的器件即可，不需要更换整个设备。而且，相较于现有的紫外固化系统而言，本实施例中提供的紫外固化系统，在实际紫外固化的过程中，省去了遮光掩膜的步骤。即，不需要因为紫外固化的图案的变化而频繁的更换掩膜板，一方面，提高了生产效率，另一方面，减小了生产成本。\n\n[0047]在本实例中，通过设置多个驱动单元50，在紫外固化的过程中，可以根据实际固化需求打开或闭合光源302，从而实现多种固化需求。并且，任一驱动单元50可以单独控制任一光源302的发光，在实现不同形状固化时，不需要进行掩膜这一步骤，因此，不仅可以节省生产成本，并且，能够提高生产效率。\n\n[0048]优选的，光学透镜40的材料为耐紫外硅胶、耐紫外碳酸聚酯或聚甲基丙烯酸甲酯。\n\n[0049]相应的，本发明还提供一种紫外固化设备，包括本发明任一实施例提供的紫外固化系统。\n\n[0050]以上对本发明实施例提供的紫外固化系统以及紫外固化设备进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明。同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10633, 23687, '技术领域\n\n[0001]本揭示涉及液晶显示技术领域，尤其涉及一种发光二极管及使用所述发光二极管的背光模组，保证了背光模组的亮度均匀性。\n\n背景技术\n\n[0002]随着可穿戴应用设备如智能眼镜、智能手表等设备逐渐兴起，显示工艺对可挠曲显示器件的需求也不断增加。有机发光二极管显示器件(Organic Light EmittingDisplay，OLED)具有自发光不需背光源、厚度薄、视角广、反应速度快等特点，从而具有可挠曲显示的天然优势。面对柔性OLED的竞争，传统的液晶显示技术也逐渐采用柔性衬底，朝向柔性、曲面等方向进行突破，由此可见，柔性、曲面显示技术的时代即将来临。\n\n[0003]直下式背光模组具有窄边框的优势，在大尺寸显示领域得到广泛的应用，但是面临着厚度增加的问题。采用小尺寸的微发光二极管(mini light emitting diode，miniLED)以更小的间距进行排列可以获得较小的混光距离(避免近光处的hotspot现象)，为小尺寸直下式背光模块实现轻、薄、窄提供更大的可能性。直下式背光模块由于采用大量的发光二极管构成阵列，发光二极管本身及发光二极管的焊垫本身会构成面积比例较大的低反射体，发光二极管与发光二极管之间通常会采用高反射率的白油或者其他高反射材料覆盖，所述高反射材料的材料本身反射率为较低的70-90％，因而从整体反射效率仅能达成大约80％左右，远低于侧入式背光模组中所使用的反射片能达成接近100％的反射率，因而导致整体光效较低从而影响了直下式背光模组的亮度与功耗水准，通常会采用较厚的高反射层以保证反射率。\n\n[0004]如图1所示，现有的背光模组中的驱动基板1及单颗微发光二极管2结构中，驱动基板1的焊垫(未图示)与微发光二极管2的p/n电极(未图示)连接，微发光二极管2的四周为高反射层结构，其厚度通常为10微米-30微米。微发光二极管2的p/n电极通过导电锡膏3或者银浆等介质与驱动基板1的焊垫接触。但是导电锡膏3通常是通过涂覆工艺制备的，涂覆完成后处于凝胶状态下具有一定的流动性与表面张力，因而会形成类似“小山峰”形貌，当微发光二极管2通过固晶工艺与导电锡膏3接触后，微发光二极管2因尺寸过小容易在导电锡膏3粘附力的作用下出现倾斜，如图1所示，从而影响到微发光二极管2的光反射状态，使得微发光二极管2在光学上呈现倾斜相关的亮、暗不均现象，并且由于驱动基板1的焊垫面积过小，难以通过控制导电锡膏2的状态来避免上述现象。\n\n[0005]因此，有必要提供一种发光二极管及使用所述发光二极管的背光模组，解决传统微发光二极管及其构成的直下式背光模组因焊垫及导电锡膏的状态与厚度所导致的面内亮度不均问题。\n\n发明内容\n\n[0006]为了解决上述技术问题，本揭示采用覆晶(flip-chip)电极结构，将P电极与N电极的结构增厚，并通过沉积结合低熔点金属构成的金属衬垫来与驱动基板焊垫的金属共融导通，所述共融导通方式有效避免了传统锡膏及银浆等使发光二极管黏结于驱动基板的方式所造成微发光二极管的倾斜问题，保证了背光模块整面的亮度均匀性，同时P电极与N电极的增厚电极设计保证了所述微发光二极管的有源区仍然能够高于设置于微发光二极管两侧的反射层之上，从而能够保证高亮度背光模块光效。\n\n[0007]为了达到上述目的，本揭示提供一种发光二极管，包括：一基板；一第一半导体层，设置于所述基板上；一发光层，设置于所述第一半导体层的第一部分；一第二半导体层，设置于所述发光层上；一第一电极，设置于所述第一半导体层的第二部分上，所述第一部分与所述第二部分不重迭；以及一第二电极，设置于所述第二半导体层上；其中所述第一电极的厚度大于所述第二电极的厚度。\n\n[0008]根据本文描述的发光二极管的一实施例，所述第一电极与所述第二电极分别具有一厚度为介于10微米至30微米之间的一范围内。\n\n[0009]根据本文描述的发光二极管的一实施例，所述第一电极的一表面与所述第二电极的一表面位于同一水平高度。\n\n[0010]根据本文描述的发光二极管的一实施例，所述第一电极与所述第二电极选自由钛、铝、银、金、铜或其组成的合金中的至少一种。\n\n[0011]根据本文描述的发光二极管的一实施例，所述第一电极的表面设置一第一金属衬垫，所述第二电极的表面设置一第二金属衬垫，所述第一金属衬垫与所述第二金属衬垫为低熔点金属。\n\n[0012]为了达到上述目的，本揭示另提供一种背光模组，其包含以上所述的发光二极管。本揭示的背光模组包括：一驱动基板；多个发光二极管，阵列设置于所述驱动基板上，所述发光二极管包括:一基板；一第一半导体层，设置于所述基板上；一发光层，设置于所述第一半导体层的第一部分；一第二半导体层，设置于所述发光层上；一第一电极，设置于所述第一半导体层的第二部分上，所述第一部分与所述第二部分不重迭；以及一第二电极，设置于所述第二半导体层上；其中所述第一电极的厚度大于所述第二电极的厚度；以及多个反射块，分别设置于相邻两发光二极管之间；其中所述发光层与所述驱动基板间的一间距大于所述反射块的一厚度。\n\n[0013]根据本文描述的背光模组的一实施例，所述发光二极管为一覆晶式芯片，所述第一电极通过一第一金属衬垫电性连接至所述驱动基板上的第一焊垫，且所述第二电极通过该一第二金属衬垫电性连接至所述驱动基板的第二焊垫。\n\n[0014]根据本文描述的背光模组的一实施例，所述第一电极与所述第二电极分别具有一厚度为介于10微米至30微米之间的一范围内。\n\n[0015]根据本文描述的背光模组的一实施例，所述第一电极的厚度大于所述第二电极的厚度。\n\n[0016]根据本文描述的背光模组的一实施例，相邻两所述发光二极管间的一间距为介于100微米至1000微米的一范围。\n\n[0017]根据本文描述的背光模组的一实施例，所述第一电极与所述第二电极选自由钛、铝、银、金、铜或其组成的合金中的至少一种。\n\n[0018]根据本文描述的背光模组的一实施例，所述第一电极的一表面与所述第二电极的一表面位于同一水平高度。\n\n[0019]根据本文描述的背光模组的一实施例，所述背光模组更包括一光学膜片组，所述光学膜片组包括依序设置于所述多个发光二极管以及所述多个反射块上的一光学膜片层、一扩散膜层与一增亮膜片层。\n\n[0020]本揭示提供的发光二极管及背光模组，改良了现有发光二极管结构的设计，将发光二极管中用来与背光模块的驱动基板上焊垫黏接的P电极与N电极的结构增厚，即增加P电极与N电极的高度，并使增厚的P电极与N电极维持在同一水平高度，并在增厚的P电极与N电极表面分别设置一金属衬垫用以与驱动基板上焊垫实现金属共融导通，从而有效避免了传统锡膏及银浆等方式造成的发光二极管倾斜问题，保证了背光模块整面的亮度均匀性，同时增厚的P电极与N电极设计保证了所述发光二极管的发光层仍然能够在设置于相邻两发光二极管之间的较厚(10微米至30微米)的反射块之上，从而对于五面发光的微发光二极管的能够发挥最佳的光反射作用，因而能够保证高亮度背光模块的光效。\n\n附图说明\n\n[0021]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0022]图1为现有背光模组结构剖面示意图。\n\n[0023]图2为本揭示发光二极管结构剖面示意图。\n\n[0024]图3为本揭示发光二极管设置于一驱动基板的结构示意图。\n\n[0025]图4为本揭示包含所述发光二极管的背光模组示意图。\n\n具体实施方式\n\n[0026]以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。\n\n[0027]下面结合附图详细本揭示实施例的实现过程。\n\n[0028]请一并参阅图2与图3，其为本揭示的发光二极管100，包括：一基板10、一第一半导体层20、一发光层30以及一第二半导体层40。所述第一半导体层20所述设置于所述基板10上，所述发光层30设置于所述第一半导体层20的第一部分201上，所述第二半导体层40设置于所述发光层30上，一第一电极50设置于所述第一半导体层20的第二部分202上，所述第一部分201与所述第二部分202不重迭，一第二电极60设置于所述第二半导体层40上。其中所述第一电极50的厚度大于所述第二电极60的厚度。\n\n[0029]其中所述基板10可以是柔性FPC板，也可以为PCB板。对于所述基板10，可以使用任何形式的基板而不受限制，只要所述基板10允许发光结构设置在其上。在某些示例性实施例中，所述基板10可为蓝宝石基底、SiC基底、尖晶石基底、Si基底或氮化镓基底。在某些示例性实施例中，所述基板10可具有形成于其上表面上的预定图案，类似于图案化的蓝宝石基底(patterned sapphire substrate,PPS)。\n\n[0030]每个所述发光二极管100可以但不限于为蓝光芯片，又称为次毫米发光二极管，亦可应用于紫外、红光、绿光、白光、红外二极管等，此处不做赘述。并且所述多个发光二极管100采用阵列式排列设置，通过减小相邻两发光二极管100之间的中心间距来实现降低混光距离与后续所制成的背光模组的厚度以满足小尺寸背光模组(小于1毫米)需求。小尺寸的所述发光二极管100具有一宽度L，如图3所示，其宽度L在100微米至600微米间的一范围。相邻两发光二极管之间的间距为100微米至1000微米。\n\n[0031]其中所述第一半导体层20为N型半导体层，而所述第二半导体层40相对的为P型半导体层，详细而言，所述第一半导体层20为N型氮化镓(GaN)层，而所述第二半导体层40为P型氮化镓层。在部分实施例中，第一半导体层20与第二半导体层40中可以包括III-V类化合物半导体，例如，(Al,Ga,In)N的氮化物类半导体。第一半导体层20可以包括掺杂有诸如Si的n型掺杂剂的n型半导体层，并且第二半导体层40可以包括掺杂有诸如Mg的p型掺杂剂的p型半导体层。所述发光层30为多重量子井层(Multiple Quantum Well,MQW)。\n\n[0032]如图2与图3所示，所述发光二极管100为覆晶共面电极堆叠结构，即所述发光二极管100为一覆晶式芯片。发光二极管100的发光层30设置于所述第一半导体层20的第一部分201上，并且裸露出第一半导体层20的第二部分202，第一部分201与第二部分202并不重迭且第一部分201邻接于第二部分202设置，第二半导体层40设置于发光层30上。尽管在图2中未示出，所述发光二极管100还可包括形成于所述基板10与所述第一半导体层20之间的一缓冲层。\n\n[0033]而所述第一电极50与所述第二电极60选自由钛、铝、银、金、铜或其组成的合金中的至少一种。根据不同的实施例，所述第一电极50的表面设置一第一金属衬垫51，所述第二电极60的表面设置一第二金属衬垫61，所述第一金属衬垫51与所述第二金属衬垫61为低熔点金属，例如熔点在摄氏90～450度之间，通常为锡的合金或为镧(ln)系元素。\n\n[0034]另外，所述第一电极50与所述第二电极60分别具有一厚度为介于10微米-30微米之间的一范围内。更进一步的说，所述第一电极50具有一厚度T1，所述第二电极60具有一厚度T2，所述第二半导体层40具有一厚度T3，以及所述发光层30具有一厚度T4，在一实施例中，T1＝T2+T3+T4，使得所述第一电极50的一表面与所述第二电极60的一表面位于同一水平高度，从而使所述发光二极管100覆晶设置于一背光模块200的一驱动基板70上时(如图4所示)，可以维持所述发光二极管100呈现稳定水平状态而不会产生发光二极管倾斜的问题。更详细的说，所述发光二极管100通过固晶工艺与驱动基板上的第一焊垫71及第二焊垫72连接，然后通过加热方式使得低熔点的所述第一金属衬垫51及第二金属衬垫61分别与第一焊垫71及第二焊垫72产生共融进而与所述第一焊垫71及第二焊垫72紧密连接，在降温过程中所述发光二极管100的所述第一电极50与所述第二电极60与所述第一焊垫71及第二焊垫72形成稳固的电性连接。所述第一电极50与所述第二电极60通过沉积及刻蚀工艺制备，因而可以保证所述第一电极50与所述第二电极60的表面的平整性，因而有效避免由于上述锡膏及银浆所导致的发光二极管倾斜问题。\n\n[0035]另外，本揭示图4另提供包含所述发光二极管100的背光模组200，使得本揭示实施例的背光模组结构在实际应用时，例如应用于屏幕显示器时保证了整面的亮度均匀性，提升显示质量。\n\n[0036]如图4所示，本揭示的背光模组200包括：一驱动基板70；多个发光二极管100，阵列设置于所述驱动基板70上，所述发光二极管100包括:一基板10、一第一半导体层20、一发光层30以及一第二半导体层40。所述第一半导体层20所述设置于所述基板10上，所述发光层30设置于所述第一半导体层20的第一部分201，所述第二半导体层40设置于所述发光层30上，一第一电极50设置于所述第一半导体层20的第二部分202上，所述第一部分201与所述第二部分202不重迭，一第二电极60设置于所述第二半导体层40上。其中所述第一电极50的厚度大于所述第二电极60的厚度，多个反射块300分别设置于相邻两发光二极管100之间。\n\n[0037]此外，所述背光模组200更包括一光学膜片组210，所述光学膜片组210包括依序设置于所述多个发光二极管100以及所述多个反射块300上的一光学膜片层211、一扩散膜层212与一增亮膜片层213。所述光学膜片层211以膜片的形式存在，所述光学膜片层211另一种优选方式为直接通过涂布的方式热压固定于所述发光二极管表面。所述光学膜片层211包含荧光粉颗粒和散射粒子，优选为包含量子点粒子等。\n\n[0038]同前所述，所述发光二极管100为一覆晶式芯片，所述第一电极50通过一第一金属衬垫51电性连接至所述驱动基板70上的第一焊垫71(如图3所示)，且所述第二电极60通过该一第二金属衬垫61电性连接至所述驱动基板70的第二焊垫72(如图3所示)。所述发光二极管100通过固晶工艺，使第一电极50通过第一金属衬垫51与驱动基板70上的第一焊垫71连接，以及使第二电极60通过第二金属衬垫61与驱动基板70上的第二焊垫72连接。然后通过加热方式使得低熔点的所述第一金属衬垫51及第二金属衬垫61分别与所述第一焊垫71与第二焊垫72产生共融进而分别与所述第一焊垫71与第二焊垫72紧密连接，在降温过程中所述发光二极管100的所述第一电极50与所述第二电极60与所述第一焊垫71与第二焊垫72形成稳固的电性连接。如此保证所述第一电极50与所述第二电极60的表面的平整性，因而有效避免由于上述锡膏及银浆所导致的发光二极管倾斜问题。\n\n[0039]另外，所述发光层30与所述驱动基板70间的一间距大于所述反射块300的一厚度。保证了所述发光层30在垂直方向的位置能够高于所述反射块300，即发光层30在垂直方向的位置在反射层300之上，从而对于五面发光的发光二极管能够发挥最佳的光反射作用。因而能够保证背光模块的高亮度光效。\n\n[0040]本揭示的发光二极管以及包含所述发光二极管的背光模组中，将发光二极管中用来分别与背光模块的驱动基板上的第一焊垫与第二焊垫黏接的第一电极与第二电极的结构增厚，即增加第一电极与第二电极的高度，并使增厚的第一电极与第二电极维持在同一水平高度，从而在后续覆晶设置的流程中有效避免了传统锡膏及银浆等方式所造成的发光二极管倾斜不正问题，保证了背光模块整面的亮度均匀性。此外，在增厚的第一电极与第二电极表面分别设置一金属衬垫用以与驱动基板上第一焊垫与第二焊垫实现金属共融导通，同时增厚的第一电极与第二电极的设计保证了所述发光二极管的发光层仍然能够在垂直方向上保持在设置于相邻两发光二极管之间的反射块之上，维持发光层的高度在反射层之上使发光二极管的光路不会被反射块所阻挡，从而对于五面发光的发光二极管的能够发挥最佳的光反射作用，进而能够保证高亮度背光模块的光效。\n\n[0041]以上所述是本揭示的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本揭示原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也视为本揭示的保护范围。', '技术领域\n\n[0001]本揭示涉及液晶显示技术领域，尤其涉及一种发光二极管及使用所述发光二极管的背光模组，保证了背光模组的亮度均匀性。\n\n背景技术\n\n[0002]随着可穿戴应用设备如智能眼镜、智能手表等设备逐渐兴起，显示工艺对可挠曲显示器件的需求也不断增加。有机发光二极管显示器件(Organic Light EmittingDisplay，OLED)具有自发光不需背光源、厚度薄、视角广、反应速度快等特点，从而具有可挠曲显示的天然优势。面对柔性OLED的竞争，传统的液晶显示技术也逐渐采用柔性衬底，朝向柔性、曲面等方向进行突破，由此可见，柔性、曲面显示技术的时代即将来临。\n\n[0003]直下式背光模组具有窄边框的优势，在大尺寸显示领域得到广泛的应用，但是面临着厚度增加的问题。采用小尺寸的微发光二极管(mini light emitting diode，miniLED)以更小的间距进行排列可以获得较小的混光距离(避免近光处的hotspot现象)，为小尺寸直下式背光模块实现轻、薄、窄提供更大的可能性。直下式背光模块由于采用大量的发光二极管构成阵列，发光二极管本身及发光二极管的焊垫本身会构成面积比例较大的低反射体，发光二极管与发光二极管之间通常会采用高反射率的白油或者其他高反射材料覆盖，所述高反射材料的材料本身反射率为较低的70-90％，因而从整体反射效率仅能达成大约80％左右，远低于侧入式背光模组中所使用的反射片能达成接近100％的反射率，因而导致整体光效较低从而影响了直下式背光模组的亮度与功耗水准，通常会采用较厚的高反射层以保证反射率。\n\n[0004]如图1所示，现有的背光模组中的驱动基板1及单颗微发光二极管2结构中，驱动基板1的焊垫(未图示)与微发光二极管2的p/n电极(未图示)连接，微发光二极管2的四周为高反射层结构，其厚度通常为10微米-30微米。微发光二极管2的p/n电极通过导电锡膏3或者银浆等介质与驱动基板1的焊垫接触。但是导电锡膏3通常是通过涂覆工艺制备的，涂覆完成后处于凝胶状态下具有一定的流动性与表面张力，因而会形成类似“小山峰”形貌，当微发光二极管2通过固晶工艺与导电锡膏3接触后，微发光二极管2因尺寸过小容易在导电锡膏3粘附力的作用下出现倾斜，如图1所示，从而影响到微发光二极管2的光反射状态，使得微发光二极管2在光学上呈现倾斜相关的亮、暗不均现象，并且由于驱动基板1的焊垫面积过小，难以通过控制导电锡膏2的状态来避免上述现象。\n\n[0005]因此，有必要提供一种发光二极管及使用所述发光二极管的背光模组，解决传统微发光二极管及其构成的直下式背光模组因焊垫及导电锡膏的状态与厚度所导致的面内亮度不均问题。\n\n发明内容\n\n[0006]为了解决上述技术问题，本揭示采用覆晶(flip-chip)电极结构，将P电极与N电极的结构增厚，并通过沉积结合低熔点金属构成的金属衬垫来与驱动基板焊垫的金属共融导通，所述共融导通方式有效避免了传统锡膏及银浆等使发光二极管黏结于驱动基板的方式所造成微发光二极管的倾斜问题，保证了背光模块整面的亮度均匀性，同时P电极与N电极的增厚电极设计保证了所述微发光二极管的有源区仍然能够高于设置于微发光二极管两侧的反射层之上，从而能够保证高亮度背光模块光效。\n\n[0007]为了达到上述目的，本揭示提供一种发光二极管，包括：一基板；一第一半导体层，设置于所述基板上；一发光层，设置于所述第一半导体层的第一部分；一第二半导体层，设置于所述发光层上；一第一电极，设置于所述第一半导体层的第二部分上，所述第一部分与所述第二部分不重迭；以及一第二电极，设置于所述第二半导体层上；其中所述第一电极的厚度大于所述第二电极的厚度。\n\n[0008]根据本文描述的发光二极管的一实施例，所述第一电极与所述第二电极分别具有一厚度为介于10微米至30微米之间的一范围内。\n\n[0009]根据本文描述的发光二极管的一实施例，所述第一电极的一表面与所述第二电极的一表面位于同一水平高度。\n\n[0010]根据本文描述的发光二极管的一实施例，所述第一电极与所述第二电极选自由钛、铝、银、金、铜或其组成的合金中的至少一种。\n\n[0011]根据本文描述的发光二极管的一实施例，所述第一电极的表面设置一第一金属衬垫，所述第二电极的表面设置一第二金属衬垫，所述第一金属衬垫与所述第二金属衬垫为低熔点金属。\n\n[0012]为了达到上述目的，本揭示另提供一种背光模组，其包含以上所述的发光二极管。本揭示的背光模组包括：一驱动基板；多个发光二极管，阵列设置于所述驱动基板上，所述发光二极管包括:一基板；一第一半导体层，设置于所述基板上；一发光层，设置于所述第一半导体层的第一部分；一第二半导体层，设置于所述发光层上；一第一电极，设置于所述第一半导体层的第二部分上，所述第一部分与所述第二部分不重迭；以及一第二电极，设置于所述第二半导体层上；其中所述第一电极的厚度大于所述第二电极的厚度；以及多个反射块，分别设置于相邻两发光二极管之间；其中所述发光层与所述驱动基板间的一间距大于所述反射块的一厚度。\n\n[0013]根据本文描述的背光模组的一实施例，所述发光二极管为一覆晶式芯片，所述第一电极通过一第一金属衬垫电性连接至所述驱动基板上的第一焊垫，且所述第二电极通过该一第二金属衬垫电性连接至所述驱动基板的第二焊垫。\n\n[0014]根据本文描述的背光模组的一实施例，所述第一电极与所述第二电极分别具有一厚度为介于10微米至30微米之间的一范围内。\n\n[0015]根据本文描述的背光模组的一实施例，所述第一电极的厚度大于所述第二电极的厚度。\n\n[0016]根据本文描述的背光模组的一实施例，相邻两所述发光二极管间的一间距为介于100微米至1000微米的一范围。\n\n[0017]根据本文描述的背光模组的一实施例，所述第一电极与所述第二电极选自由钛、铝、银、金、铜或其组成的合金中的至少一种。\n\n[0018]根据本文描述的背光模组的一实施例，所述第一电极的一表面与所述第二电极的一表面位于同一水平高度。\n\n[0019]根据本文描述的背光模组的一实施例，所述背光模组更包括一光学膜片组，所述光学膜片组包括依序设置于所述多个发光二极管以及所述多个反射块上的一光学膜片层、一扩散膜层与一增亮膜片层。\n\n[0020]本揭示提供的发光二极管及背光模组，改良了现有发光二极管结构的设计，将发光二极管中用来与背光模块的驱动基板上焊垫黏接的P电极与N电极的结构增厚，即增加P电极与N电极的高度，并使增厚的P电极与N电极维持在同一水平高度，并在增厚的P电极与N电极表面分别设置一金属衬垫用以与驱动基板上焊垫实现金属共融导通，从而有效避免了传统锡膏及银浆等方式造成的发光二极管倾斜问题，保证了背光模块整面的亮度均匀性，同时增厚的P电极与N电极设计保证了所述发光二极管的发光层仍然能够在设置于相邻两发光二极管之间的较厚(10微米至30微米)的反射块之上，从而对于五面发光的微发光二极管的能够发挥最佳的光反射作用，因而能够保证高亮度背光模块的光效。\n\n附图说明\n\n[0021]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0022]图1为现有背光模组结构剖面示意图。\n\n[0023]图2为本揭示发光二极管结构剖面示意图。\n\n[0024]图3为本揭示发光二极管设置于一驱动基板的结构示意图。\n\n[0025]图4为本揭示包含所述发光二极管的背光模组示意图。\n\n具体实施方式\n\n[0026]以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。\n\n[0027]下面结合附图详细本揭示实施例的实现过程。\n\n[0028]请一并参阅图2与图3，其为本揭示的发光二极管100，包括：一基板10、一第一半导体层20、一发光层30以及一第二半导体层40。所述第一半导体层20所述设置于所述基板10上，所述发光层30设置于所述第一半导体层20的第一部分201上，所述第二半导体层40设置于所述发光层30上，一第一电极50设置于所述第一半导体层20的第二部分202上，所述第一部分201与所述第二部分202不重迭，一第二电极60设置于所述第二半导体层40上。其中所述第一电极50的厚度大于所述第二电极60的厚度。\n\n[0029]其中所述基板10可以是柔性FPC板，也可以为PCB板。对于所述基板10，可以使用任何形式的基板而不受限制，只要所述基板10允许发光结构设置在其上。在某些示例性实施例中，所述基板10可为蓝宝石基底、SiC基底、尖晶石基底、Si基底或氮化镓基底。在某些示例性实施例中，所述基板10可具有形成于其上表面上的预定图案，类似于图案化的蓝宝石基底(patterned sapphire substrate,PPS)。\n\n[0030]每个所述发光二极管100可以但不限于为蓝光芯片，又称为次毫米发光二极管，亦可应用于紫外、红光、绿光、白光、红外二极管等，此处不做赘述。并且所述多个发光二极管100采用阵列式排列设置，通过减小相邻两发光二极管100之间的中心间距来实现降低混光距离与后续所制成的背光模组的厚度以满足小尺寸背光模组(小于1毫米)需求。小尺寸的所述发光二极管100具有一宽度L，如图3所示，其宽度L在100微米至600微米间的一范围。相邻两发光二极管之间的间距为100微米至1000微米。\n\n[0031]其中所述第一半导体层20为N型半导体层，而所述第二半导体层40相对的为P型半导体层，详细而言，所述第一半导体层20为N型氮化镓(GaN)层，而所述第二半导体层40为P型氮化镓层。在部分实施例中，第一半导体层20与第二半导体层40中可以包括III-V类化合物半导体，例如，(Al,Ga,In)N的氮化物类半导体。第一半导体层20可以包括掺杂有诸如Si的n型掺杂剂的n型半导体层，并且第二半导体层40可以包括掺杂有诸如Mg的p型掺杂剂的p型半导体层。所述发光层30为多重量子井层(Multiple Quantum Well,MQW)。\n\n[0032]如图2与图3所示，所述发光二极管100为覆晶共面电极堆叠结构，即所述发光二极管100为一覆晶式芯片。发光二极管100的发光层30设置于所述第一半导体层20的第一部分201上，并且裸露出第一半导体层20的第二部分202，第一部分201与第二部分202并不重迭且第一部分201邻接于第二部分202设置，第二半导体层40设置于发光层30上。尽管在图2中未示出，所述发光二极管100还可包括形成于所述基板10与所述第一半导体层20之间的一缓冲层。\n\n[0033]而所述第一电极50与所述第二电极60选自由钛、铝、银、金、铜或其组成的合金中的至少一种。根据不同的实施例，所述第一电极50的表面设置一第一金属衬垫51，所述第二电极60的表面设置一第二金属衬垫61，所述第一金属衬垫51与所述第二金属衬垫61为低熔点金属，例如熔点在摄氏90～450度之间，通常为锡的合金或为镧(ln)系元素。\n\n[0034]另外，所述第一电极50与所述第二电极60分别具有一厚度为介于10微米-30微米之间的一范围内。更进一步的说，所述第一电极50具有一厚度T1，所述第二电极60具有一厚度T2，所述第二半导体层40具有一厚度T3，以及所述发光层30具有一厚度T4，在一实施例中，T1＝T2+T3+T4，使得所述第一电极50的一表面与所述第二电极60的一表面位于同一水平高度，从而使所述发光二极管100覆晶设置于一背光模块200的一驱动基板70上时(如图4所示)，可以维持所述发光二极管100呈现稳定水平状态而不会产生发光二极管倾斜的问题。更详细的说，所述发光二极管100通过固晶工艺与驱动基板上的第一焊垫71及第二焊垫72连接，然后通过加热方式使得低熔点的所述第一金属衬垫51及第二金属衬垫61分别与第一焊垫71及第二焊垫72产生共融进而与所述第一焊垫71及第二焊垫72紧密连接，在降温过程中所述发光二极管100的所述第一电极50与所述第二电极60与所述第一焊垫71及第二焊垫72形成稳固的电性连接。所述第一电极50与所述第二电极60通过沉积及刻蚀工艺制备，因而可以保证所述第一电极50与所述第二电极60的表面的平整性，因而有效避免由于上述锡膏及银浆所导致的发光二极管倾斜问题。\n\n[0035]另外，本揭示图4另提供包含所述发光二极管100的背光模组200，使得本揭示实施例的背光模组结构在实际应用时，例如应用于屏幕显示器时保证了整面的亮度均匀性，提升显示质量。\n\n[0036]如图4所示，本揭示的背光模组200包括：一驱动基板70；多个发光二极管100，阵列设置于所述驱动基板70上，所述发光二极管100包括:一基板10、一第一半导体层20、一发光层30以及一第二半导体层40。所述第一半导体层20所述设置于所述基板10上，所述发光层30设置于所述第一半导体层20的第一部分201，所述第二半导体层40设置于所述发光层30上，一第一电极50设置于所述第一半导体层20的第二部分202上，所述第一部分201与所述第二部分202不重迭，一第二电极60设置于所述第二半导体层40上。其中所述第一电极50的厚度大于所述第二电极60的厚度，多个反射块300分别设置于相邻两发光二极管100之间。\n\n[0037]此外，所述背光模组200更包括一光学膜片组210，所述光学膜片组210包括依序设置于所述多个发光二极管100以及所述多个反射块300上的一光学膜片层211、一扩散膜层212与一增亮膜片层213。所述光学膜片层211以膜片的形式存在，所述光学膜片层211另一种优选方式为直接通过涂布的方式热压固定于所述发光二极管表面。所述光学膜片层211包含荧光粉颗粒和散射粒子，优选为包含量子点粒子等。\n\n[0038]同前所述，所述发光二极管100为一覆晶式芯片，所述第一电极50通过一第一金属衬垫51电性连接至所述驱动基板70上的第一焊垫71(如图3所示)，且所述第二电极60通过该一第二金属衬垫61电性连接至所述驱动基板70的第二焊垫72(如图3所示)。所述发光二极管100通过固晶工艺，使第一电极50通过第一金属衬垫51与驱动基板70上的第一焊垫71连接，以及使第二电极60通过第二金属衬垫61与驱动基板70上的第二焊垫72连接。然后通过加热方式使得低熔点的所述第一金属衬垫51及第二金属衬垫61分别与所述第一焊垫71与第二焊垫72产生共融进而分别与所述第一焊垫71与第二焊垫72紧密连接，在降温过程中所述发光二极管100的所述第一电极50与所述第二电极60与所述第一焊垫71与第二焊垫72形成稳固的电性连接。如此保证所述第一电极50与所述第二电极60的表面的平整性，因而有效避免由于上述锡膏及银浆所导致的发光二极管倾斜问题。\n\n[0039]另外，所述发光层30与所述驱动基板70间的一间距大于所述反射块300的一厚度。保证了所述发光层30在垂直方向的位置能够高于所述反射块300，即发光层30在垂直方向的位置在反射层300之上，从而对于五面发光的发光二极管能够发挥最佳的光反射作用。因而能够保证背光模块的高亮度光效。\n\n[0040]本揭示的发光二极管以及包含所述发光二极管的背光模组中，将发光二极管中用来分别与背光模块的驱动基板上的第一焊垫与第二焊垫黏接的第一电极与第二电极的结构增厚，即增加第一电极与第二电极的高度，并使增厚的第一电极与第二电极维持在同一水平高度，从而在后续覆晶设置的流程中有效避免了传统锡膏及银浆等方式所造成的发光二极管倾斜不正问题，保证了背光模块整面的亮度均匀性。此外，在增厚的第一电极与第二电极表面分别设置一金属衬垫用以与驱动基板上第一焊垫与第二焊垫实现金属共融导通，同时增厚的第一电极与第二电极的设计保证了所述发光二极管的发光层仍然能够在垂直方向上保持在设置于相邻两发光二极管之间的反射块之上，维持发光层的高度在反射层之上使发光二极管的光路不会被反射块所阻挡，从而对于五面发光的发光二极管的能够发挥最佳的光反射作用，进而能够保证高亮度背光模块的光效。\n\n[0041]以上所述是本揭示的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本揭示原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也视为本揭示的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10634, 23688, '技术领域\n\n[0001]本发明涉及液晶显示技术领域，具体涉及一种侧入式背光模组以及液晶显示装置。\n\n背景技术\n\n[0002]液晶显示装置(Liquid Crystal Display，LCD)，为平面超薄的显示设备，它由一定数量的彩色或黑白像素组成，放置于光源或者反射面前方。液晶显示装置功耗很低，并且具有高画质、体积小、重量轻的特点，因此倍受大家青睐，成为显示器的主流。现有市场上的液晶显示装置大部分为背光型液晶显示装置，包括液晶显示面板及背光模组，液晶显示面板与背光模组相对设置，背光模组提供显示光源给液晶显示面板，以使液晶显示面板显示影像。\n\n[0003]液晶显示面板通常由薄膜晶体管阵列基板、彩色滤光基板和液晶层组成。彩色滤光基板中包含有红色色阻、绿色色阻和蓝色色阻，其作用是将通过液晶层的白光过滤为不同颜色的光束，各不同颜色的光束重新汇聚形成图像画面。背光模组主要是用于产生白色光源提供给液晶面板。传统的液晶显示设备的背光源采用冷阴极荧光灯(CCFL)，但是由于CCFL背光源存在色彩还原能力较差、发光效率低、放电电压高、低温下放电特性差、加热达到稳定灰度时间长等缺点，当前已经开发出使用LED背光源的背光源技术，其中最为普遍的是LED侧入式背光源，将LED光源设置在导光板的侧面。\n\n[0004]对于侧入式LED背光而言，由于LED为朗伯型发光，LED芯片的发光光线有一定发散角度，因此需要将LED芯片的出光面与导光板的入光面限定在合适的距离内，减少光线的损失。在大尺寸的液晶显示装置中，需要更大功率的背光源，一种办法是增加设置在PCB板上的LED芯片的数量，形成高密度的光源，相邻两个LED芯片之间的间距很小。此时，如何有效地限定LED芯片的出光面与导光板的入光面之间的耦光距离、并确保各个LED芯片耦光距离的均匀性和稳定性是需要解决的问题。\n\n发明内容\n\n[0005]有鉴于此，本发明提供了一种侧入式背光模组中，其可以实现高密度的光源并可以有效地限定光源出光面与导光板的入光面之间的耦光距离。\n\n[0006]为了达到上述的目的，本发明采用了如下的技术方案：\n\n[0007]一种侧入式背光模组，包括导光板和位于所述导光板侧面的光源组件，所述光源组件包括PCB板和连接在所述PCB板上的多个LED芯片，其中，每一所述LED芯片的侧面分别设置有限位件，所述限位件的顶端凸起于所述LED芯片的出光面并抵触连接到所述导光板的入光面，以限定所述LED芯片的出光面与所述导光板的入光面之间的耦光距离。\n\n[0008]具体地，所述LED芯片的侧壁上靠近所述PCB板的一端具有缺口，所述限位件的底端连接在所述PCB板上并延伸至所述缺口中\n\n[0009]具体地，所述LED芯片与所述限位件相互紧密贴合。\n\n[0010]具体地，所述LED芯片的纵向剖面具有T形的形状，所述限位件的纵向剖面具有L形的形状。\n\n[0011]具体地，所述限位件的顶端凸起于所述LED芯片的出光面的高度为0.05mm～0.1mm。\n\n[0012]具体地，分别对应于相邻两个LED芯片的两个限位件的间距不大于0.2mm。\n\n[0013]具体地，所述多个LED芯片在所述PCB板上沿一直线方向并行排列。\n\n[0014]具体地，所述侧入式背光模组还包括背板、反射片和光学膜片组，所述反射片设置于所述背板上，所述导光板设置于所述反射片上，所述光学膜片组设置于所述导光板上，所述光源组件位于所述导光板侧面并连接到所述背板上。\n\n[0015]本发明实施例提供的侧入式背光模组，其中用于限定耦光距离的限位件与PCB板具有较大的连接面积，可以提供足够大的支撑力，可以稳定地限定耦光距离。而限位件顶部的厚度又较小，占用的空间小，可以使得LED芯片布置更加紧密，同一PCB板上可以连接更多数量的LED芯片，实现高密度的背光光源。另外，每一个LED芯片的侧面均设置有限位件，又可以使得各个LED芯片的耦光距离得到比较均衡地保持。\n\n附图说明\n\n[0016]图1是本发明实施例提供的侧入式背光模组的俯视示意图；\n\n[0017]图2是如图1中沿X-X线的剖面结构示意图；\n\n[0018]图3是如图1中A部分的放大示意图；\n\n[0019]图4是如图1中B部分的放大示意图\n\n[0020]图5是本发明实施例提供的液晶显示装置的结构示意图。\n\n具体实施方式\n\n[0021]为使本发明的目的、技术方案和优点更加清楚，下面结合附图对本发明的具体实施方式进行详细说明。这些优选实施方式的示例在附图中进行了例示。附图中所示和根据附图描述的本发明的实施方式仅仅是示例性的，并且本发明并不限于这些实施方式。\n\n[0022]在此，还需要说明的是，为了避免因不必要的细节而模糊了本发明，在附图中仅仅示出了与根据本发明的方案密切相关的结构和/或处理步骤，而省略了与本发明关系不大的其他细节。\n\n[0023]本实施例首先提供了一种侧入式背光模组，如图1和图2所示，所述侧入式背光模组100包括背板10、反射片20、导光板30、光学膜片组40以及光源组件50。\n\n[0024]其中，所述反射片20、导光板30以及光学膜片组40依次设置在所述背板10上，所述光源组件50设置在所述背板10上并且位于所述导光板30的侧面。所述光源组件50发出的光线经过所述导光板30的传导，在所述导光板30的背面由所述反射片20反射之后入射到所述光学膜片组40，然后再从所述光学膜片组40的上表面发射出，通常地，所述光学膜片组40包括棱镜片和増透膜等。\n\n[0025]其中，参阅图1，所述光源组件50包括PCB板51和连接在所述PCB板51上的多个LED芯片52，多个所述LED芯片52在所述PCB板51上沿一直线方向并行排列，每一个所述LED芯片52的侧面分别设置有限位件53。具体地，所述限位件53的底端(靠近所述PCB板51的一端)连接在所述PCB板51上，所述限位件53的顶端(背离所述PCB板51的一端)凸起于所述LED芯片52的出光面并抵触连接到所述导光板30的入光面，以限定所述LED芯片52的出光面与所述导光板30的入光面之间的耦光距离。\n\n[0026]在本实施例中，如图3和图4所示，所述LED芯片52的侧壁上靠近所述PCB板51的一端具有缺口52a，所述限位件53的底端连接在所述PCB板51上并延伸至所述缺口52a中。\n\n[0027]具体地，如图3所示，所述LED芯片52与所述限位件53相互紧密贴合，所述限位件53环绕贴合在所述LED芯片52，可以起到保护所述LED芯片52的作用。本实施例中，所述LED芯片52的纵向剖面具有T形的形状，其出光面位置的宽度大于与所述PCB板51连接位置的宽度；所述限位件53的纵向剖面具有L形的形状，其与所述PCB板51连接位置的宽度大于其顶部的宽度。由此使得所述限位件53与所述PCB板51之间具有较大的连接面积，同时又占用较小的空间(对应于LED芯片52位置的空间)，同一PCB板上可以连接更多数量的LED芯片52。\n\n[0028]基于以上结构的光源组件50，其中的限位件53不仅可以提供较大的支撑力以稳定地限定耦光距离，并且其占用空间小，使得LED芯片52的布置更加紧密，实现高密度的背光光源。另外，每一个LED芯片52的侧面均设置有限位件53，又可以使得各个LED芯片52的耦光距离得到比较均衡地保持。\n\n[0029]其中，如图3所示，所述限位件53的顶端凸起于所述LED芯片52的出光面的高度H需要根据实际所需的耦光距离设定，该高度H通常是设定在0.05mm～0.1mm的范围内。\n\n[0030]其中，如图4所示，分别对应于相邻两个LED芯片52的两个限位件53的间距D限定为不大于0.2mm，最好是两个限位件53可以紧密贴合，即间距D为0mm。\n\n[0031]本实施例的另一方面是提供一种液晶显示装置，如图5所示，所述液晶显示装置包括如上所述的侧入式背光模组100和液晶显示面板200，所述液晶显示面板200与所述侧入式背光模组100相对设置，所述侧入式背光模组100提供显示光源给所述液晶显示面板200，以使所述液晶显示面板200显示影像。其中，液晶显示面板200包括相对设置的阵列基板201和滤光基板202，还包括位于阵列基板201和滤光基板202之间的液晶层203。\n\n[0032]综上所述，本发明实施例提供的侧入式背光模组，其可以实现高密度的光源并可以有效地限定光源出光面与导光板的入光面之间的耦光距离，有利于为大尺寸的液晶显示装置提供大功率的背光源。\n\n[0033]需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。\n\n[0034]以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。', '技术领域\n\n[0001]本发明涉及液晶显示技术领域，具体涉及一种侧入式背光模组以及液晶显示装置。\n\n背景技术\n\n[0002]液晶显示装置(Liquid Crystal Display，LCD)，为平面超薄的显示设备，它由一定数量的彩色或黑白像素组成，放置于光源或者反射面前方。液晶显示装置功耗很低，并且具有高画质、体积小、重量轻的特点，因此倍受大家青睐，成为显示器的主流。现有市场上的液晶显示装置大部分为背光型液晶显示装置，包括液晶显示面板及背光模组，液晶显示面板与背光模组相对设置，背光模组提供显示光源给液晶显示面板，以使液晶显示面板显示影像。\n\n[0003]液晶显示面板通常由薄膜晶体管阵列基板、彩色滤光基板和液晶层组成。彩色滤光基板中包含有红色色阻、绿色色阻和蓝色色阻，其作用是将通过液晶层的白光过滤为不同颜色的光束，各不同颜色的光束重新汇聚形成图像画面。背光模组主要是用于产生白色光源提供给液晶面板。传统的液晶显示设备的背光源采用冷阴极荧光灯(CCFL)，但是由于CCFL背光源存在色彩还原能力较差、发光效率低、放电电压高、低温下放电特性差、加热达到稳定灰度时间长等缺点，当前已经开发出使用LED背光源的背光源技术，其中最为普遍的是LED侧入式背光源，将LED光源设置在导光板的侧面。\n\n[0004]对于侧入式LED背光而言，由于LED为朗伯型发光，LED芯片的发光光线有一定发散角度，因此需要将LED芯片的出光面与导光板的入光面限定在合适的距离内，减少光线的损失。在大尺寸的液晶显示装置中，需要更大功率的背光源，一种办法是增加设置在PCB板上的LED芯片的数量，形成高密度的光源，相邻两个LED芯片之间的间距很小。此时，如何有效地限定LED芯片的出光面与导光板的入光面之间的耦光距离、并确保各个LED芯片耦光距离的均匀性和稳定性是需要解决的问题。\n\n发明内容\n\n[0005]有鉴于此，本发明提供了一种侧入式背光模组中，其可以实现高密度的光源并可以有效地限定光源出光面与导光板的入光面之间的耦光距离。\n\n[0006]为了达到上述的目的，本发明采用了如下的技术方案：\n\n[0007]一种侧入式背光模组，包括导光板和位于所述导光板侧面的光源组件，所述光源组件包括PCB板和连接在所述PCB板上的多个LED芯片，其中，每一所述LED芯片的侧面分别设置有限位件，所述限位件的顶端凸起于所述LED芯片的出光面并抵触连接到所述导光板的入光面，以限定所述LED芯片的出光面与所述导光板的入光面之间的耦光距离。\n\n[0008]具体地，所述LED芯片的侧壁上靠近所述PCB板的一端具有缺口，所述限位件的底端连接在所述PCB板上并延伸至所述缺口中\n\n[0009]具体地，所述LED芯片与所述限位件相互紧密贴合。\n\n[0010]具体地，所述LED芯片的纵向剖面具有T形的形状，所述限位件的纵向剖面具有L形的形状。\n\n[0011]具体地，所述限位件的顶端凸起于所述LED芯片的出光面的高度为0.05mm～0.1mm。\n\n[0012]具体地，分别对应于相邻两个LED芯片的两个限位件的间距不大于0.2mm。\n\n[0013]具体地，所述多个LED芯片在所述PCB板上沿一直线方向并行排列。\n\n[0014]具体地，所述侧入式背光模组还包括背板、反射片和光学膜片组，所述反射片设置于所述背板上，所述导光板设置于所述反射片上，所述光学膜片组设置于所述导光板上，所述光源组件位于所述导光板侧面并连接到所述背板上。\n\n[0015]本发明实施例提供的侧入式背光模组，其中用于限定耦光距离的限位件与PCB板具有较大的连接面积，可以提供足够大的支撑力，可以稳定地限定耦光距离。而限位件顶部的厚度又较小，占用的空间小，可以使得LED芯片布置更加紧密，同一PCB板上可以连接更多数量的LED芯片，实现高密度的背光光源。另外，每一个LED芯片的侧面均设置有限位件，又可以使得各个LED芯片的耦光距离得到比较均衡地保持。\n\n附图说明\n\n[0016]图1是本发明实施例提供的侧入式背光模组的俯视示意图；\n\n[0017]图2是如图1中沿X-X线的剖面结构示意图；\n\n[0018]图3是如图1中A部分的放大示意图；\n\n[0019]图4是如图1中B部分的放大示意图\n\n[0020]图5是本发明实施例提供的液晶显示装置的结构示意图。\n\n具体实施方式\n\n[0021]为使本发明的目的、技术方案和优点更加清楚，下面结合附图对本发明的具体实施方式进行详细说明。这些优选实施方式的示例在附图中进行了例示。附图中所示和根据附图描述的本发明的实施方式仅仅是示例性的，并且本发明并不限于这些实施方式。\n\n[0022]在此，还需要说明的是，为了避免因不必要的细节而模糊了本发明，在附图中仅仅示出了与根据本发明的方案密切相关的结构和/或处理步骤，而省略了与本发明关系不大的其他细节。\n\n[0023]本实施例首先提供了一种侧入式背光模组，如图1和图2所示，所述侧入式背光模组100包括背板10、反射片20、导光板30、光学膜片组40以及光源组件50。\n\n[0024]其中，所述反射片20、导光板30以及光学膜片组40依次设置在所述背板10上，所述光源组件50设置在所述背板10上并且位于所述导光板30的侧面。所述光源组件50发出的光线经过所述导光板30的传导，在所述导光板30的背面由所述反射片20反射之后入射到所述光学膜片组40，然后再从所述光学膜片组40的上表面发射出，通常地，所述光学膜片组40包括棱镜片和増透膜等。\n\n[0025]其中，参阅图1，所述光源组件50包括PCB板51和连接在所述PCB板51上的多个LED芯片52，多个所述LED芯片52在所述PCB板51上沿一直线方向并行排列，每一个所述LED芯片52的侧面分别设置有限位件53。具体地，所述限位件53的底端(靠近所述PCB板51的一端)连接在所述PCB板51上，所述限位件53的顶端(背离所述PCB板51的一端)凸起于所述LED芯片52的出光面并抵触连接到所述导光板30的入光面，以限定所述LED芯片52的出光面与所述导光板30的入光面之间的耦光距离。\n\n[0026]在本实施例中，如图3和图4所示，所述LED芯片52的侧壁上靠近所述PCB板51的一端具有缺口52a，所述限位件53的底端连接在所述PCB板51上并延伸至所述缺口52a中。\n\n[0027]具体地，如图3所示，所述LED芯片52与所述限位件53相互紧密贴合，所述限位件53环绕贴合在所述LED芯片52，可以起到保护所述LED芯片52的作用。本实施例中，所述LED芯片52的纵向剖面具有T形的形状，其出光面位置的宽度大于与所述PCB板51连接位置的宽度；所述限位件53的纵向剖面具有L形的形状，其与所述PCB板51连接位置的宽度大于其顶部的宽度。由此使得所述限位件53与所述PCB板51之间具有较大的连接面积，同时又占用较小的空间(对应于LED芯片52位置的空间)，同一PCB板上可以连接更多数量的LED芯片52。\n\n[0028]基于以上结构的光源组件50，其中的限位件53不仅可以提供较大的支撑力以稳定地限定耦光距离，并且其占用空间小，使得LED芯片52的布置更加紧密，实现高密度的背光光源。另外，每一个LED芯片52的侧面均设置有限位件53，又可以使得各个LED芯片52的耦光距离得到比较均衡地保持。\n\n[0029]其中，如图3所示，所述限位件53的顶端凸起于所述LED芯片52的出光面的高度H需要根据实际所需的耦光距离设定，该高度H通常是设定在0.05mm～0.1mm的范围内。\n\n[0030]其中，如图4所示，分别对应于相邻两个LED芯片52的两个限位件53的间距D限定为不大于0.2mm，最好是两个限位件53可以紧密贴合，即间距D为0mm。\n\n[0031]本实施例的另一方面是提供一种液晶显示装置，如图5所示，所述液晶显示装置包括如上所述的侧入式背光模组100和液晶显示面板200，所述液晶显示面板200与所述侧入式背光模组100相对设置，所述侧入式背光模组100提供显示光源给所述液晶显示面板200，以使所述液晶显示面板200显示影像。其中，液晶显示面板200包括相对设置的阵列基板201和滤光基板202，还包括位于阵列基板201和滤光基板202之间的液晶层203。\n\n[0032]综上所述，本发明实施例提供的侧入式背光模组，其可以实现高密度的光源并可以有效地限定光源出光面与导光板的入光面之间的耦光距离，有利于为大尺寸的液晶显示装置提供大功率的背光源。\n\n[0033]需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。\n\n[0034]以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10635, 23689, '技术领域\n\n[0001]本发明属于显示技术领域，具体地讲，涉及一种背光模组及其制作方法。\n\n背景技术\n\n[0002]液晶显示器(Liquid Crystal Display，简称LCD)作为人与信息的沟通界面，是当前主流的显示方式。它具有高空间利用率、低功耗、无辐射以及低电磁干扰等优越特性，在电视、手机、平板电脑等信息沟通工具中广泛使用。\n\n[0003]在LCD中，背光源是必不可少的部分。目前的LCD背光源的形式主要有两种，一种是直下式，另一种是侧入式，这两种形式的背光源都会面临模组亮度和模组厚度的瓶颈。为了解决亮度问题，目前行业内一般采用量子点背光技术，即在背光模组中增加量子点材料，以提高背光源的亮度和提升画面画质。但是由于量子点材料对水汽和氧气非常敏感，容易失效，因此量子点膜层上下表面需要设置保护膜，然而现有技术中的保护膜的成本非常高，几乎占据了量子点膜成本的一半。\n\n发明内容\n\n[0004]为了解决上述的现有技术存在的不足，本发明提供一种将量子点材料层整合设置在背光模组中而不需要增加传统的阻隔膜的背光模组及其制作方法。\n\n[0005]为了实现上述的目的，本发明采用了如下的技术方案：\n\n[0006]一种背光模组，包括：\n\n[0007]基板，具有相对的第一表面和第二表面；\n\n[0008]量子点材料层，设置于所述第二表面上；\n\n[0009]发光模块，设置于所述第一表面上，所述发光模块用于朝所述量子点材料层发射光线；\n\n[0010]反射结构，设置于所述量子点材料层的背向所述基板的表面上。\n\n[0011]优选地，所述反射结构包括第一反射层，所述第一反射层设置于所述量子点材料层的背向所述基板的表面上。\n\n[0012]优选地，所述反射结构包括塑料基板以及分别设置于所述塑料基板的相对两表面上的第一反射层和第二反射层，第一反射层贴合于所述量子点材料层的背向所述基板的表面上。\n\n[0013]优选地，所述第一反射层和/或所述第二反射层为金属反射层。\n\n[0014]优选地，所述发光模块包括若干个LED发光单元，所述LED发光单元包括薄膜晶体管开关以及与所述薄膜晶体管开关电连接的mini-LED芯片，所述mini-LED芯片发光面朝向所述量子点材料层。\n\n[0015]优选地，所述第一反射层和/或所述第二反射层为金属反射层。\n\n[0016]优选地，所述基板为玻璃基板。\n\n[0017]本发明还公开了一种背光模组的制作方法，所述制作方法包括步骤：\n\n[0018]S1：在基板的第一表面上制作发光模块；\n\n[0019]S2：在所述基板的与所述第一表面相对的第二表面上制作量子点材料层；\n\n[0020]S3：在所述量子点材料层的背向所述基板的表面上贴合反射结构。\n\n[0021]优选地，步骤S2具体包括：\n\n[0022]将形成有所述发光模块的所述基板倒置；\n\n[0023]在所述基板的第二表面上喷涂量子点溶液，以形成量子点材料层。\n\n[0024]优选地，所述步骤S3具体包括：\n\n[0025]在塑料基板上制作第一反射层；\n\n[0026]在所述塑料基板的背向所述第一反射层的表面上制作第二反射层；\n\n[0027]采用卷贴的方式将所述第一反射层贴合于所述量子点材料层的背向所述基板的表面上。\n\n[0028]优选地，在贴合所述第一反射层之后，对所述塑料基板进行切边处理，以使得所述塑料基板的面积等于所述基板的面积。\n\n[0029]本发明还公开了一种液晶显示器，包括任一种上述的背光模组。\n\n[0030]有益效果：本发明的公开的背光模组，通过将量子点材料层整合设置在基板和第一反射层之间，基板和第一反射层可起到阻隔水汽和氧气的作用，不需要设置成本昂贵的阻隔膜来保护量子点材料，有利于减少背光模组的成本。另外，由于不需要设置阻隔膜，降低了背光模组的整体厚度。\n\n附图说明\n\n[0031]图1为本发明的实施例一的背光模组的剖面示意图；\n\n[0032]图2为本发明的实施例二的背光模组的制作方法的流程图。\n\n具体实施方式\n\n[0033]为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。\n\n[0034]实施例一\n\n[0035]如图1所示，根据本发明的实施例背光模组包括基板10、发光模块20、量子点材料层30和反射结构40。其中，基板10具有第一表面和与第一表面相对的第二表面，发光模块20设置于第一表面上，量子点材料层30设置于第二表面上，反射结构40设置于量子点材料层30的背向基板10表面上。发光模块20发射的光线穿过基板10后在量子点材料层30中激发产生高亮度的光线，该高亮度的光线经过反射结构40后从第一表面出射。其中，基板10和反射结构40具有良好的隔绝水汽和氧气的作用，可避免量子点材料层30被损坏，起到保护量子点材料层30的作用，不需要在量子点材料层30的上下两表面设置额外的传统的保护膜层，降低了量子点背光源的成本，同时有利于减小背光模组的整体厚度。\n\n[0036]作为优选实施例，反射结构40包括第一反射层41，第一反射层41设置于量子点材料层30的背向基板10的表面上，第一反射层41优选为金属反射层，例如银反射层。\n\n[0037]当然在其他实施方式中，反射结构40包括塑料基板42以及分别设置于塑料基板42的相对两表面的第一反射层41和第二反射层42。作为优选实施例，塑料基板42的材料为聚乙烯(polyethylene，简称PE)或者是聚碳酸酯(PC)，这样可以进一步减小量子点材料层30受水汽和氧气的影响。\n\n[0038]作为优选实施例，第一反射层41和/或第二反射层43优选采用金属反射层，例如选用银。一方面，第二反射层43可以进一步减少水汽和氧气进入到量子点材料层30中；另一方面，通过在塑料基板42的双面分别设置反射结构40和第二反射层60，可以减少塑料基板42本身吸收的水汽，这样塑料基板42吸水膨胀少，其应力分布均匀，可避免塑料基板42发生破裂。\n\n[0039]进一步地，基板10优选采用玻璃基板，玻璃基板具有良好的支撑强度，且具有良好的透光性。\n\n[0040]具体地，发光模块20包括设置于第一表面上的若干个LED发光单元21，LED发光单元包括薄膜晶体管开关21a以及与薄膜晶体管开关21a电连接的mini-LED芯片21b，mini-LED芯片21b朝量子点材料层30发射光线。其中，每个LED发光单元21中的mini-LED芯片21b数量为多个，每个薄膜晶体管开关21a同时控制多个mini-LED芯片21b，有利于实现显示面板的局部区域的亮度调节。其中，本实施例中的mini-LED又名次毫米发光二极管，指晶粒尺寸约在100微米以上的LED。\n\n[0041]本发明的实施例公开的背光模组，通过将量子点材料层整合设置在基板和第一反射层之间，基板和第一反射层可起到阻隔水汽和氧气的作用，不需要设置成本昂贵的阻隔膜来保护量子点材料，有利于减少背光模组的成本。另外，由于不需要设置阻隔膜，降低了背光模组的整体厚度。\n\n[0042]实施例二\n\n[0043]参照图1，根据本发明的实施例二的背光模组的制作方法包括如下步骤：\n\n[0044]步骤S1：在基板10的第一表面上制作发光模块20。\n\n[0045]步骤S2：在基板10的与第一表面相对的第二表面上制作量子点材料层30。\n\n[0046]具体地，基板10优选为玻璃基板，将形成有发光模块20的基板倒置，在基板10的第二表面上喷涂包覆处理后的量子点溶液，接着旋转基板10，使得量子点溶液均匀分布在第二表面上，以形成量子点材料层30\n\n[0047]步骤S3：在量子点材料层30的背向基板10的表面上贴合反射结构40。\n\n[0048]具体地，该步骤具体包括如下步骤：\n\n[0049]S31：在塑料基板42上制作第一反射层41。具体地，第一反射层41采用金属反射层，例如银，在塑料基板42上镀银。\n\n[0050]S32：在塑料基板42的背向反射结构40的表面上制作第二反射层43。其中，第二反射层43采用金属反射层，例如银，在塑料基板42上镀银。\n\n[0051]S33：将第一反射层41贴合于量子点材料层30的背向基板10的表面上。具体地，采用卷贴的方式将塑料基板42整体贴附在量子点材料层30上，使得第一反射层41贴合在量子点材料层30上。其中，塑料基板42的面积大于基板10的面积，当塑料基板42贴附后，对塑料基板42进行切边处理，使其大小与基板10面积相等。\n\n[0052]本实施例二提供的制作方法，可以分开制作量子点材料层和第一反射层，接着在将两者贴合，工艺简单。\n\n[0053]实施例三\n\n[0054]根据本发明的实施例三的液晶显示器包括背光模组、阵列基板、与阵列基板对盒设置的彩膜基板以及设置于彩膜基板和阵列基板之间的液晶，背光模组设置于阵列基板的背向彩膜基板的一侧。\n\n[0055]上面对本发明的具体实施方式进行了详细描述，虽然已表示和描述了一些实施例，但本领域技术人员应该理解，在不脱离由权利要求及其等同物限定其范围的本发明的原理和精神的情况下，可以对这些实施例进行修改和完善，这些修改和完善也应在本发明的保护范围内。', '技术领域\n\n[0001]本发明属于显示技术领域，具体地讲，涉及一种背光模组及其制作方法。\n\n背景技术\n\n[0002]液晶显示器(Liquid Crystal Display，简称LCD)作为人与信息的沟通界面，是当前主流的显示方式。它具有高空间利用率、低功耗、无辐射以及低电磁干扰等优越特性，在电视、手机、平板电脑等信息沟通工具中广泛使用。\n\n[0003]在LCD中，背光源是必不可少的部分。目前的LCD背光源的形式主要有两种，一种是直下式，另一种是侧入式，这两种形式的背光源都会面临模组亮度和模组厚度的瓶颈。为了解决亮度问题，目前行业内一般采用量子点背光技术，即在背光模组中增加量子点材料，以提高背光源的亮度和提升画面画质。但是由于量子点材料对水汽和氧气非常敏感，容易失效，因此量子点膜层上下表面需要设置保护膜，然而现有技术中的保护膜的成本非常高，几乎占据了量子点膜成本的一半。\n\n发明内容\n\n[0004]为了解决上述的现有技术存在的不足，本发明提供一种将量子点材料层整合设置在背光模组中而不需要增加传统的阻隔膜的背光模组及其制作方法。\n\n[0005]为了实现上述的目的，本发明采用了如下的技术方案：\n\n[0006]一种背光模组，包括：\n\n[0007]基板，具有相对的第一表面和第二表面；\n\n[0008]量子点材料层，设置于所述第二表面上；\n\n[0009]发光模块，设置于所述第一表面上，所述发光模块用于朝所述量子点材料层发射光线；\n\n[0010]反射结构，设置于所述量子点材料层的背向所述基板的表面上。\n\n[0011]优选地，所述反射结构包括第一反射层，所述第一反射层设置于所述量子点材料层的背向所述基板的表面上。\n\n[0012]优选地，所述反射结构包括塑料基板以及分别设置于所述塑料基板的相对两表面上的第一反射层和第二反射层，第一反射层贴合于所述量子点材料层的背向所述基板的表面上。\n\n[0013]优选地，所述第一反射层和/或所述第二反射层为金属反射层。\n\n[0014]优选地，所述发光模块包括若干个LED发光单元，所述LED发光单元包括薄膜晶体管开关以及与所述薄膜晶体管开关电连接的mini-LED芯片，所述mini-LED芯片发光面朝向所述量子点材料层。\n\n[0015]优选地，所述第一反射层和/或所述第二反射层为金属反射层。\n\n[0016]优选地，所述基板为玻璃基板。\n\n[0017]本发明还公开了一种背光模组的制作方法，所述制作方法包括步骤：\n\n[0018]S1：在基板的第一表面上制作发光模块；\n\n[0019]S2：在所述基板的与所述第一表面相对的第二表面上制作量子点材料层；\n\n[0020]S3：在所述量子点材料层的背向所述基板的表面上贴合反射结构。\n\n[0021]优选地，步骤S2具体包括：\n\n[0022]将形成有所述发光模块的所述基板倒置；\n\n[0023]在所述基板的第二表面上喷涂量子点溶液，以形成量子点材料层。\n\n[0024]优选地，所述步骤S3具体包括：\n\n[0025]在塑料基板上制作第一反射层；\n\n[0026]在所述塑料基板的背向所述第一反射层的表面上制作第二反射层；\n\n[0027]采用卷贴的方式将所述第一反射层贴合于所述量子点材料层的背向所述基板的表面上。\n\n[0028]优选地，在贴合所述第一反射层之后，对所述塑料基板进行切边处理，以使得所述塑料基板的面积等于所述基板的面积。\n\n[0029]本发明还公开了一种液晶显示器，包括任一种上述的背光模组。\n\n[0030]有益效果：本发明的公开的背光模组，通过将量子点材料层整合设置在基板和第一反射层之间，基板和第一反射层可起到阻隔水汽和氧气的作用，不需要设置成本昂贵的阻隔膜来保护量子点材料，有利于减少背光模组的成本。另外，由于不需要设置阻隔膜，降低了背光模组的整体厚度。\n\n附图说明\n\n[0031]图1为本发明的实施例一的背光模组的剖面示意图；\n\n[0032]图2为本发明的实施例二的背光模组的制作方法的流程图。\n\n具体实施方式\n\n[0033]为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。\n\n[0034]实施例一\n\n[0035]如图1所示，根据本发明的实施例背光模组包括基板10、发光模块20、量子点材料层30和反射结构40。其中，基板10具有第一表面和与第一表面相对的第二表面，发光模块20设置于第一表面上，量子点材料层30设置于第二表面上，反射结构40设置于量子点材料层30的背向基板10表面上。发光模块20发射的光线穿过基板10后在量子点材料层30中激发产生高亮度的光线，该高亮度的光线经过反射结构40后从第一表面出射。其中，基板10和反射结构40具有良好的隔绝水汽和氧气的作用，可避免量子点材料层30被损坏，起到保护量子点材料层30的作用，不需要在量子点材料层30的上下两表面设置额外的传统的保护膜层，降低了量子点背光源的成本，同时有利于减小背光模组的整体厚度。\n\n[0036]作为优选实施例，反射结构40包括第一反射层41，第一反射层41设置于量子点材料层30的背向基板10的表面上，第一反射层41优选为金属反射层，例如银反射层。\n\n[0037]当然在其他实施方式中，反射结构40包括塑料基板42以及分别设置于塑料基板42的相对两表面的第一反射层41和第二反射层42。作为优选实施例，塑料基板42的材料为聚乙烯(polyethylene，简称PE)或者是聚碳酸酯(PC)，这样可以进一步减小量子点材料层30受水汽和氧气的影响。\n\n[0038]作为优选实施例，第一反射层41和/或第二反射层43优选采用金属反射层，例如选用银。一方面，第二反射层43可以进一步减少水汽和氧气进入到量子点材料层30中；另一方面，通过在塑料基板42的双面分别设置反射结构40和第二反射层60，可以减少塑料基板42本身吸收的水汽，这样塑料基板42吸水膨胀少，其应力分布均匀，可避免塑料基板42发生破裂。\n\n[0039]进一步地，基板10优选采用玻璃基板，玻璃基板具有良好的支撑强度，且具有良好的透光性。\n\n[0040]具体地，发光模块20包括设置于第一表面上的若干个LED发光单元21，LED发光单元包括薄膜晶体管开关21a以及与薄膜晶体管开关21a电连接的mini-LED芯片21b，mini-LED芯片21b朝量子点材料层30发射光线。其中，每个LED发光单元21中的mini-LED芯片21b数量为多个，每个薄膜晶体管开关21a同时控制多个mini-LED芯片21b，有利于实现显示面板的局部区域的亮度调节。其中，本实施例中的mini-LED又名次毫米发光二极管，指晶粒尺寸约在100微米以上的LED。\n\n[0041]本发明的实施例公开的背光模组，通过将量子点材料层整合设置在基板和第一反射层之间，基板和第一反射层可起到阻隔水汽和氧气的作用，不需要设置成本昂贵的阻隔膜来保护量子点材料，有利于减少背光模组的成本。另外，由于不需要设置阻隔膜，降低了背光模组的整体厚度。\n\n[0042]实施例二\n\n[0043]参照图1，根据本发明的实施例二的背光模组的制作方法包括如下步骤：\n\n[0044]步骤S1：在基板10的第一表面上制作发光模块20。\n\n[0045]步骤S2：在基板10的与第一表面相对的第二表面上制作量子点材料层30。\n\n[0046]具体地，基板10优选为玻璃基板，将形成有发光模块20的基板倒置，在基板10的第二表面上喷涂包覆处理后的量子点溶液，接着旋转基板10，使得量子点溶液均匀分布在第二表面上，以形成量子点材料层30\n\n[0047]步骤S3：在量子点材料层30的背向基板10的表面上贴合反射结构40。\n\n[0048]具体地，该步骤具体包括如下步骤：\n\n[0049]S31：在塑料基板42上制作第一反射层41。具体地，第一反射层41采用金属反射层，例如银，在塑料基板42上镀银。\n\n[0050]S32：在塑料基板42的背向反射结构40的表面上制作第二反射层43。其中，第二反射层43采用金属反射层，例如银，在塑料基板42上镀银。\n\n[0051]S33：将第一反射层41贴合于量子点材料层30的背向基板10的表面上。具体地，采用卷贴的方式将塑料基板42整体贴附在量子点材料层30上，使得第一反射层41贴合在量子点材料层30上。其中，塑料基板42的面积大于基板10的面积，当塑料基板42贴附后，对塑料基板42进行切边处理，使其大小与基板10面积相等。\n\n[0052]本实施例二提供的制作方法，可以分开制作量子点材料层和第一反射层，接着在将两者贴合，工艺简单。\n\n[0053]实施例三\n\n[0054]根据本发明的实施例三的液晶显示器包括背光模组、阵列基板、与阵列基板对盒设置的彩膜基板以及设置于彩膜基板和阵列基板之间的液晶，背光模组设置于阵列基板的背向彩膜基板的一侧。\n\n[0055]上面对本发明的具体实施方式进行了详细描述，虽然已表示和描述了一些实施例，但本领域技术人员应该理解，在不脱离由权利要求及其等同物限定其范围的本发明的原理和精神的情况下，可以对这些实施例进行修改和完善，这些修改和完善也应在本发明的保护范围内。');
INSERT INTO `os_patent_instruction_text` VALUES (10636, 23690, '技术领域\n\n[0001]本发明涉及一种电子装置。\n\n背景技术\n\n[0002]现有技术中，在电子装置如智能手机的前表面，也就是与显示面板同一侧表面上的可用空间较为局限，因此如何在电子装置的前表面上利用有限的空间来设置摄像镜头和指纹识别传感器，已成为一个有待解决的技术问题。\n\n[0003]因此，有必要提供一种电子装置，以解决上述现有技术存在的问题。\n\n发明内容\n\n[0004]本发明的主要目的是提供一种电子装置，其在一前表面上同时设置设一第一摄像镜头及一第二摄像镜头，所述第二摄像镜头除了可进行各种特殊功能的拍照或录影之外，还能提供指纹辨识功能。\n\n[0005]为达上述目的，本发明提供一种电子装置，其包含：本体，所述本体具有贯穿所述本体的前表面的安装腔；盖板，所述盖板安装于所述本体的前表面并遮盖所述安装腔；第二摄像头，所述第二摄像头位于所述盖板的靠近所述安装腔的一侧；指纹辨识感应层，所述指纹辨识感应层位于所述盖板和所述第二摄像头之间；其中，在俯视视角下，所述指纹辨识感应层的至少一部分和所述第二摄像头重叠。\n\n[0006]在本发明的一实施例中，所述第二摄像镜头包含一相机构造层、一光学镜头层及一蓝宝石玻璃层，其中所述光学镜头层设于所述相机构造层的上方，所述蓝宝石玻璃层设于所述光学镜头层的上方以及所述指纹辨识感应层的下方。\n\n[0007]在本发明的一实施例中，所述指纹辨识感应层为透明材料制成。\n\n[0008]在本发明的一实施例中，所述指纹辨识感应层为电容式指纹识别传感器。\n\n[0009]在本发明的一实施例中，所述电子装置还包括第一摄像镜头，所述第一摄像镜头位于所述盖板的靠近所述安装腔的一侧并与所述第二摄像头间隔设置，所述第一摄像镜头与所述盖板的距离不同于所述第二摄像头与所述盖板的距离。\n\n[0010]在本发明的一实施例中，所述第一摄像镜头与所述盖板的距离小于所述第二摄像头与所述盖板的距离。\n\n[0011]在本发明的一实施例中，所述第一摄像镜头和所述第二摄像头分别邻近于所述盖板的两端。\n\n[0012]在本发明的一实施例中，所述电子装置还包括显示面板，所述显示面板安装于所述安装腔并位于所述盖板的邻近所述安装腔的一侧，所述盖板包括位于所述显示面板两端的第一区域和第二区域，所述第一摄像镜头位于所述第一区域，所述第二摄像头设于所述第二区域。\n\n[0013]在本发明的一实施例中，所述盖板由玻璃制成。\n\n[0014]在本发明的一实施例中，所述显示面板为LCD显示面板，或OLED显示面板，或QLED显示面板，或Micro LED显示面板。\n\n[0015]在本发明中，通过将所述指纹辨识感应层与所述第二摄像镜头整合，可以进一步提高智慧型电子装置前表面的空间利用率。\n\n附图说明\n\n[0016]图1：本发明的一种电子装置的上视示意图。\n\n[0017]图2：本发明的一种电子装置的侧视示意图。\n\n[0018]图3：本发明的一种电子装置的局部侧剖视放大示意图。\n\n具体实施方式\n\n[0019]为让本发明上述目的、特征及优点更明显易懂，下文特举本发明较佳实施例，并配合附图，作详细说明。再者，本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参照附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。\n\n[0020]首先说明，本发明所称的电子装置可以以各种形式来实施。例如，本发明中描述的电子装置可以包括诸如移动电话、智能电话、笔记本电脑、数字广播接收器、PDA(个人数字助理)、PAD(平板电脑)、PMP(便携式多媒体播放器)、导航装置等等终端。下面，假设电子装置是移动终端。然而，本领域技术人员将理解的是，除了特别用于移动目的的元件之外，根据本发明的实施方式的构造也能够应用于固定类型的终端。\n\n[0021]请参照图1及图2所示，图1是本发明的一种电子装置的上视示意图；及图2是本发明的一种电子装置的侧视示意图。如图1所及图2示，本发明的电子装置例如一智能手机，其主要包含一本体100，所述本体大致呈一扁方形，具有一前表面10、一后表面11及四个边表面，所述四个边表面分别是一上边表面12a,一右边表面12b,一下边表面12c及一左边表面12d，其中所述上边表面12a与所述下边表面12c位于所述本体100的相对侧。\n\n[0022]如图1所及图2示，所述本体100另具有一盖板13及一安装腔14，所述盖板13设于所述本体100的前表面10。所述前表面10、所述后表面11及四个所述边表面共同围成所述安装腔14，所述安装腔14为贯穿所述本体100的前表面的10的腔室，所述盖板13遮盖所述安装腔14，所述盖板13例如由玻璃制成。\n\n[0023]所述前表面10主要包含一显示面板20、一第一边缘区30及一第二边缘区40，其中所述显示面板20占据所述前表面10上的大部分的面积，所述显示面板20可为LCD显示面板，或OLED显示面板，或QLED显示面板，或Micro LED显示面板。所述第一边缘区30位于所述显示面板20与所述上边表面12a之间，所述第二边缘区40位于所述显示面板20与所述下边表面12c之间。换言之，所述第一边缘区30及所述第二边缘区40位于所述显示面板20的两个相对侧。\n\n[0024]在本发明中，所述第一边缘区30上设有一第一摄像镜头31，并且所述第二边缘区40上设有一第二摄像镜头41，其中所述第一摄像镜头31可以执行一般自拍摄像镜头的功能，而所述第二摄像镜头41则能够在朝向使用者的摄影方向上进行多种特殊功能的拍照或录影。\n\n[0025]换言之，如图1所及图2示，所述盖板13是设于所述显示面板20、所述第一摄像镜头31及所述第二摄像镜头41的上方。所述显示面板20安装于所述安装腔14并位于所述盖板13的邻近所述安装腔14的一侧，所述盖板13包括位于所述显示面板20两端的第一区域30和第二区域40，所述第一摄像镜头31位于所述第一区域30，所述第二摄像头41设于所述第二区域40。所述第一摄像镜头31和所述第二摄像头41分别邻近于所述盖板13的两端。\n\n[0026]例如，使用者可以利用所述第二摄像镜头41完成测距、景深判断，用以拍摄3D影像或是更真实的景深效果；所述第二摄像镜头41可采用黑白镜头，让智慧型电子装置可以拍摄更细腻的黑白照片；所述第二摄像镜头41可采用超广角镜头，使智慧型电子装置可拍摄更广阔的画面；或者所述第二摄像镜头41可采用光学变焦的望远镜头，让智慧型电子装置可实现远距离的拍摄效果。\n\n[0027]请再参照图3所示，图3是本发明的一种电子装置的局部侧剖视放大示意图。如图3所示，所述第二摄像镜头41上设有一指纹辨识感应层410，所述指纹辨识感应层410可设于所述第二摄像镜头41的上方，并且所述指纹辨识感应层例如可为透明材料如ITO(Indiumtin oxide氧化铟锡)制成，所述指纹辨识感应层可为电容式指纹识别传感器，本发明并不加以限定。详细来说，所述第二摄像镜头41包含一相机构造层41a、一光学镜头层41b及一蓝宝石玻璃层41c，其中所述光学镜头层41b设于所述相机构造层41a的上方，所述蓝宝石玻璃层41c设于所述光学镜头层41b的上方以及所述指纹辨识感应层410的下方。\n\n[0028]在本发明中，在俯视视角下，所述指纹辨识感应层410的至少一部分和所述第二摄像头41重叠。\n\n[0029]优选地，所述相机构造层41a、所述光学镜头层41b及所述蓝宝石玻璃层41c及所述指纹辨识感应层410是在同一个芯片制程中所形成的。详细来说，所述指纹辨识感应层包含一感应层(Rx)及一触控驱动层(Tx)(未绘制)，所述感应层及所述触控驱动层是形成在所述蓝宝石玻璃层41c上。\n\n[0030]综上所述，由于现有的智慧型电子装置在其前表面，也就是与所述显示面板20在同一侧表面上的可用空间较为局限，并且在所述表面还需要安排其他的功能元件，因此在本发明中，通过在将所述指纹辨识感应层410与所述第二摄像镜头41整合，也就是在使用者在此一位置上，既可以选择执行摄像的功能，也能够选择执行指纹辨识的功能，因此可以进一步提高智慧型电子装置的前表面的空间利用率。\n\n[0031]另外，本发明并不限定所述第一摄像镜头31及所述第二摄像镜头41的具体设置位置，然而在本发明中，所述第一摄像镜头31及所述第二摄像镜头41的位置与所述第一边缘区30与所述第二边缘区40的位置相关。\n\n[0032]详细来说，所述第一摄像镜31头位于所述盖板13的靠近所述安装腔14的一侧，并与所述第二摄像头41间隔设置，所述第一摄像镜头31与所述盖板13的距离不同于所述第二摄像头41与所述盖板13的距离。例如，所述第一摄像镜头31与所述盖板13的距离小于所述第二摄像头41与所述盖板13的距离。所述第二摄像头41位于所述盖板13的靠近所述安装腔14的一侧；所述指纹辨识感应层410位于所述盖板13和所述第二摄像头41之间。\n\n[0033]基本上，所述第一边缘区30是位于所述显示面板20与所述四个边表面的其中一个边表面之间，并设有一第一摄像镜头31，而所述第二边缘区40优选地位于所述第一边缘区30的相对侧，并设有一第二摄像镜头41。\n\n[0034]优选地，所述第一摄像镜头31位于所述第一边缘区30的中央位置，并且所述第二摄像镜头41位于所述第二边缘区40的中央位置，从而使得上述两个摄像镜头可取得一致的水平(或垂直)拍摄的基准。\n\n[0035]优选地，所述第一摄像镜头31与所述第二摄像镜头41之间的距离至少大于人眼瞳孔之间的距离，例如大于50毫米(mm)，从而可以更好地模拟左右眼的3D视觉效果。\n\n[0036]在本发明中，通过在显示面板的同一侧的表面上，以及在与所述第一摄像镜头31相对侧上设置所述第二摄像镜头41，所述第二摄像镜头41能够在朝向使用者的摄影方向上进行多种特殊功能的拍照或录影。\n\n[0037]本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。', '技术领域\n\n[0001]本发明涉及一种电子装置。\n\n背景技术\n\n[0002]现有技术中，在电子装置如智能手机的前表面，也就是与显示面板同一侧表面上的可用空间较为局限，因此如何在电子装置的前表面上利用有限的空间来设置摄像镜头和指纹识别传感器，已成为一个有待解决的技术问题。\n\n[0003]因此，有必要提供一种电子装置，以解决上述现有技术存在的问题。\n\n发明内容\n\n[0004]本发明的主要目的是提供一种电子装置，其在一前表面上同时设置设一第一摄像镜头及一第二摄像镜头，所述第二摄像镜头除了可进行各种特殊功能的拍照或录影之外，还能提供指纹辨识功能。\n\n[0005]为达上述目的，本发明提供一种电子装置，其包含：本体，所述本体具有贯穿所述本体的前表面的安装腔；盖板，所述盖板安装于所述本体的前表面并遮盖所述安装腔；第二摄像头，所述第二摄像头位于所述盖板的靠近所述安装腔的一侧；指纹辨识感应层，所述指纹辨识感应层位于所述盖板和所述第二摄像头之间；其中，在俯视视角下，所述指纹辨识感应层的至少一部分和所述第二摄像头重叠。\n\n[0006]在本发明的一实施例中，所述第二摄像镜头包含一相机构造层、一光学镜头层及一蓝宝石玻璃层，其中所述光学镜头层设于所述相机构造层的上方，所述蓝宝石玻璃层设于所述光学镜头层的上方以及所述指纹辨识感应层的下方。\n\n[0007]在本发明的一实施例中，所述指纹辨识感应层为透明材料制成。\n\n[0008]在本发明的一实施例中，所述指纹辨识感应层为电容式指纹识别传感器。\n\n[0009]在本发明的一实施例中，所述电子装置还包括第一摄像镜头，所述第一摄像镜头位于所述盖板的靠近所述安装腔的一侧并与所述第二摄像头间隔设置，所述第一摄像镜头与所述盖板的距离不同于所述第二摄像头与所述盖板的距离。\n\n[0010]在本发明的一实施例中，所述第一摄像镜头与所述盖板的距离小于所述第二摄像头与所述盖板的距离。\n\n[0011]在本发明的一实施例中，所述第一摄像镜头和所述第二摄像头分别邻近于所述盖板的两端。\n\n[0012]在本发明的一实施例中，所述电子装置还包括显示面板，所述显示面板安装于所述安装腔并位于所述盖板的邻近所述安装腔的一侧，所述盖板包括位于所述显示面板两端的第一区域和第二区域，所述第一摄像镜头位于所述第一区域，所述第二摄像头设于所述第二区域。\n\n[0013]在本发明的一实施例中，所述盖板由玻璃制成。\n\n[0014]在本发明的一实施例中，所述显示面板为LCD显示面板，或OLED显示面板，或QLED显示面板，或Micro LED显示面板。\n\n[0015]在本发明中，通过将所述指纹辨识感应层与所述第二摄像镜头整合，可以进一步提高智慧型电子装置前表面的空间利用率。\n\n附图说明\n\n[0016]图1：本发明的一种电子装置的上视示意图。\n\n[0017]图2：本发明的一种电子装置的侧视示意图。\n\n[0018]图3：本发明的一种电子装置的局部侧剖视放大示意图。\n\n具体实施方式\n\n[0019]为让本发明上述目的、特征及优点更明显易懂，下文特举本发明较佳实施例，并配合附图，作详细说明。再者，本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参照附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。\n\n[0020]首先说明，本发明所称的电子装置可以以各种形式来实施。例如，本发明中描述的电子装置可以包括诸如移动电话、智能电话、笔记本电脑、数字广播接收器、PDA(个人数字助理)、PAD(平板电脑)、PMP(便携式多媒体播放器)、导航装置等等终端。下面，假设电子装置是移动终端。然而，本领域技术人员将理解的是，除了特别用于移动目的的元件之外，根据本发明的实施方式的构造也能够应用于固定类型的终端。\n\n[0021]请参照图1及图2所示，图1是本发明的一种电子装置的上视示意图；及图2是本发明的一种电子装置的侧视示意图。如图1所及图2示，本发明的电子装置例如一智能手机，其主要包含一本体100，所述本体大致呈一扁方形，具有一前表面10、一后表面11及四个边表面，所述四个边表面分别是一上边表面12a,一右边表面12b,一下边表面12c及一左边表面12d，其中所述上边表面12a与所述下边表面12c位于所述本体100的相对侧。\n\n[0022]如图1所及图2示，所述本体100另具有一盖板13及一安装腔14，所述盖板13设于所述本体100的前表面10。所述前表面10、所述后表面11及四个所述边表面共同围成所述安装腔14，所述安装腔14为贯穿所述本体100的前表面的10的腔室，所述盖板13遮盖所述安装腔14，所述盖板13例如由玻璃制成。\n\n[0023]所述前表面10主要包含一显示面板20、一第一边缘区30及一第二边缘区40，其中所述显示面板20占据所述前表面10上的大部分的面积，所述显示面板20可为LCD显示面板，或OLED显示面板，或QLED显示面板，或Micro LED显示面板。所述第一边缘区30位于所述显示面板20与所述上边表面12a之间，所述第二边缘区40位于所述显示面板20与所述下边表面12c之间。换言之，所述第一边缘区30及所述第二边缘区40位于所述显示面板20的两个相对侧。\n\n[0024]在本发明中，所述第一边缘区30上设有一第一摄像镜头31，并且所述第二边缘区40上设有一第二摄像镜头41，其中所述第一摄像镜头31可以执行一般自拍摄像镜头的功能，而所述第二摄像镜头41则能够在朝向使用者的摄影方向上进行多种特殊功能的拍照或录影。\n\n[0025]换言之，如图1所及图2示，所述盖板13是设于所述显示面板20、所述第一摄像镜头31及所述第二摄像镜头41的上方。所述显示面板20安装于所述安装腔14并位于所述盖板13的邻近所述安装腔14的一侧，所述盖板13包括位于所述显示面板20两端的第一区域30和第二区域40，所述第一摄像镜头31位于所述第一区域30，所述第二摄像头41设于所述第二区域40。所述第一摄像镜头31和所述第二摄像头41分别邻近于所述盖板13的两端。\n\n[0026]例如，使用者可以利用所述第二摄像镜头41完成测距、景深判断，用以拍摄3D影像或是更真实的景深效果；所述第二摄像镜头41可采用黑白镜头，让智慧型电子装置可以拍摄更细腻的黑白照片；所述第二摄像镜头41可采用超广角镜头，使智慧型电子装置可拍摄更广阔的画面；或者所述第二摄像镜头41可采用光学变焦的望远镜头，让智慧型电子装置可实现远距离的拍摄效果。\n\n[0027]请再参照图3所示，图3是本发明的一种电子装置的局部侧剖视放大示意图。如图3所示，所述第二摄像镜头41上设有一指纹辨识感应层410，所述指纹辨识感应层410可设于所述第二摄像镜头41的上方，并且所述指纹辨识感应层例如可为透明材料如ITO(Indiumtin oxide氧化铟锡)制成，所述指纹辨识感应层可为电容式指纹识别传感器，本发明并不加以限定。详细来说，所述第二摄像镜头41包含一相机构造层41a、一光学镜头层41b及一蓝宝石玻璃层41c，其中所述光学镜头层41b设于所述相机构造层41a的上方，所述蓝宝石玻璃层41c设于所述光学镜头层41b的上方以及所述指纹辨识感应层410的下方。\n\n[0028]在本发明中，在俯视视角下，所述指纹辨识感应层410的至少一部分和所述第二摄像头41重叠。\n\n[0029]优选地，所述相机构造层41a、所述光学镜头层41b及所述蓝宝石玻璃层41c及所述指纹辨识感应层410是在同一个芯片制程中所形成的。详细来说，所述指纹辨识感应层包含一感应层(Rx)及一触控驱动层(Tx)(未绘制)，所述感应层及所述触控驱动层是形成在所述蓝宝石玻璃层41c上。\n\n[0030]综上所述，由于现有的智慧型电子装置在其前表面，也就是与所述显示面板20在同一侧表面上的可用空间较为局限，并且在所述表面还需要安排其他的功能元件，因此在本发明中，通过在将所述指纹辨识感应层410与所述第二摄像镜头41整合，也就是在使用者在此一位置上，既可以选择执行摄像的功能，也能够选择执行指纹辨识的功能，因此可以进一步提高智慧型电子装置的前表面的空间利用率。\n\n[0031]另外，本发明并不限定所述第一摄像镜头31及所述第二摄像镜头41的具体设置位置，然而在本发明中，所述第一摄像镜头31及所述第二摄像镜头41的位置与所述第一边缘区30与所述第二边缘区40的位置相关。\n\n[0032]详细来说，所述第一摄像镜31头位于所述盖板13的靠近所述安装腔14的一侧，并与所述第二摄像头41间隔设置，所述第一摄像镜头31与所述盖板13的距离不同于所述第二摄像头41与所述盖板13的距离。例如，所述第一摄像镜头31与所述盖板13的距离小于所述第二摄像头41与所述盖板13的距离。所述第二摄像头41位于所述盖板13的靠近所述安装腔14的一侧；所述指纹辨识感应层410位于所述盖板13和所述第二摄像头41之间。\n\n[0033]基本上，所述第一边缘区30是位于所述显示面板20与所述四个边表面的其中一个边表面之间，并设有一第一摄像镜头31，而所述第二边缘区40优选地位于所述第一边缘区30的相对侧，并设有一第二摄像镜头41。\n\n[0034]优选地，所述第一摄像镜头31位于所述第一边缘区30的中央位置，并且所述第二摄像镜头41位于所述第二边缘区40的中央位置，从而使得上述两个摄像镜头可取得一致的水平(或垂直)拍摄的基准。\n\n[0035]优选地，所述第一摄像镜头31与所述第二摄像镜头41之间的距离至少大于人眼瞳孔之间的距离，例如大于50毫米(mm)，从而可以更好地模拟左右眼的3D视觉效果。\n\n[0036]在本发明中，通过在显示面板的同一侧的表面上，以及在与所述第一摄像镜头31相对侧上设置所述第二摄像镜头41，所述第二摄像镜头41能够在朝向使用者的摄影方向上进行多种特殊功能的拍照或录影。\n\n[0037]本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。');
INSERT INTO `os_patent_instruction_text` VALUES (10637, 23691, '技术领域\n\n[0001]本申请涉及显示技术领域，特别涉及一种显示面板及显示装置。\n\n背景技术\n\n[0002]在传统的自发光器件中，例如目前量产的有机发光二极管显示装置，由于金属电极具有很高的反射率，使得金属电极可反射外界光源的光线，且显示面板反射的外界光源光线会严重影响自发光器件的显示品质。通常采用在自发光器件上增加一具有1/4波长相位延迟的偏光片，从而可以降低金属电极的反射率，进而提高自发光器件的显示质量。\n\n[0003]然而，由于偏光片成本高，且由于偏光片会使自发光器件的发光效率降低50％-60％左右，进而降低光能利用率。\n\n发明内容\n\n[0004]本申请实施例的目的是提供一种显示面板及显示装置，可以减弱显示面板中金属电极反射外界光源的光线对显示面板造成的影响，进而提高显示质量。\n\n[0005]本申请实施例提供一种显示面板，包括：\n\n[0006]基板，所述基板包括相对设置的第一表面和第二表面；\n\n[0007]电极层，所述电极层设置在所述基板的第一表面上；以及\n\n[0008]反射功能层，所述反射功能层设置在所述电极层上，用于降低所述电极层的反射率。\n\n[0009]在本申请所述的显示面板中，所述反射功能层包括层叠设置的第一金属子层、透明非金属子层、第二金属子层；其中，\n\n[0010]所述第一金属子层和所述第二金属子层的材料均包括钼金属材料、铬金属材料以及钨金属材料中的至少一种；所述透明非金属子层包括纳米铟锡金属氧化物材料、透明导电氧化物材料、铟镓锌氧化物材料、氧化硅材料以及氮化硅材料中的至少一种。\n\n[0011]在本申请所述的显示面板中，所述第一金属子层的厚度介于12纳米-40纳米之间，所述第二金属子层的厚度介于2纳米-15纳米之间，所述透明非金属子层的厚度介于3纳米-7纳米之间。\n\n[0012]在本申请所述的显示面板中，所述显示面板还包括：发光器件层以及封装层，所述发光器件层设置在所述反射功能层上，所述封装层设置在所述发光器件层上并覆盖所述反射功能层；其中，所述封装层的表面设置有纳米压印微结构。\n\n[0013]在本申请所述的显示面板中，所述纳米压印微结构包括多个呈阵列式间隔分布于所述封装层表面的多个半球形状的纳米级凸起。\n\n[0014]在本申请所述的显示面板中，所述发光器件层包括多个呈阵列排布的微型发光二极管，所述微型发光二极管设置在所述反射光能层上。\n\n[0015]在本申请所述的显示面板中，所述基板的第二表面设置有黑色遮光胶。\n\n[0016]在本申请所述的显示面板中，所述电极层包括第一子电极层和第二子电极层；所述第一子电极层包括间隔设置的源极金属电极、漏极金属电极以及公共电极，所述第二子电极层包括栅极金属电极；其中，所述反射功能层覆盖所述源极金属电极、所述漏极金属电极、所述公共电极以及所述栅极金属电极。\n\n[0017]在本申请所述的显示面板中，所述反射功能层包括多个反射块，所述多个反射块与所述源极金属电极、所述漏极金属电极、所述公共电极以及所述栅极金属电极一一对应。\n\n[0018]在本申请所述的显示面板中，所述多个反射块在所述基板上的投影位于非发光区域上。\n\n[0019]本申请实施例还提供一种显示装置，包括以上所述的显示面板。\n\n[0020]由上可知，本申请实施例的显示面板通过在电极层上设置反射功能层，该反射功能层用于降低该电极层的反射率，即，当外界光源的光线射入显示面板时，光线需经过反射功能层，从而可以减弱显示面板中金属电极反射外界光源的光线对显示面板造成的影响，进而提高显示质量；并且本申请实施例中的显示面板并不需要使用偏光片来降低金属电极的反射率，从而可以提高显示面板的光能利用率。\n\n附图说明\n\n[0021]为了更清楚地说明本申请实施例或现有技术中的技术方案，下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本申请的部分实施例，对于本领域普通技术人员而言，在不付出创造性劳动的前提下，还可以根据这些附图获取其他的附图。\n\n[0022]图1为本申请实施例中的显示面板的一种结构示意图；\n\n[0023]图2为本申请实施例中的显示面板的反射功能层的一种结构示意图；\n\n[0024]图3为本申请实施例中的显示面板的另一种结构示意图；\n\n[0025]图4为本申请实施例中的显示面板的再一种结构示意图。\n\n具体实施方式\n\n[0026]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0027]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0028]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0029]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0030]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0031]请参阅图1，图1为本申请实施例中的显示面板的一种结构示意图。如图1所示，本申请实施例的显示面板10包括：基板100、电极层200以及反射功能层300；其中，该基板100包括相对设置的第一表面101和第二表面102，该电极层200设置在基板100的第一表面101上，该反射功能层300设置在电极层200上。\n\n[0032]本申请实施例的显示面板通过在电极层200上设置反射功能层300，该反射功能层300用于降低电极层200的反射率。需要说明的是，由于电极层200具有很高的反射率，即当外界光源的光线射入显示面板10时，外界光源的光线能够通过电极层200将光线反射出去。\n\n[0033]在本申请实施例中，当外界光源的光线射入显示面板10时，外界光源的光线需经过反射功能层300，而不是直接射入电极层200，从而可以减弱显示面板10中电极层200反射外界光源的光线，进而提高显示质量。\n\n[0034]在一些实施例中，请参阅图2，图2为本申请实施例中的显示面板的反射功能层的一种结构示意图。结合图1、图2，该反射功能层300包括层叠设置的第一金属子层301、透明非金属子层302、第二金属子层303，该第一金属子层301、透明非金属子层302以及第二金属子层303依次层叠设置在电极层200上。也即，当外界光源的光线射入显示面板10时，光线依次经过第一金属子层301、透明非金属子层302、第二金属子层303和电极层200。\n\n[0035]其中，该第一金属子层301和第二金属子层303的材料均包括钼金属材料、铬金属材料以及钨金属材料中的至少一种；该透明非金属子层302包括纳米铟锡金属氧化物材料、透明导电氧化物材料、铟镓锌氧化物材料、氧化硅材料以及氮化硅材料中的至少一种。\n\n[0036]其中，该第一金属子层301的厚度介于12纳米-40纳米，该第二金属子层303的厚度介于2纳米-15纳米，该透明非金属子层302的厚度介于3纳米-7纳米。\n\n[0037]在一些实施例中，第二金属子层303的厚度小于第一金属子层301的厚度。\n\n[0038]在一些实施例中，请继续参阅图1，该电极层200包括第一子电极层201和第二子电极层202，该第一子电极层201和第二子电极层202位于不同层。需要说明的是，第一子电极层201和第二子电极层202上均设置有反射功能层300，且该第一子电极层201用于形成晶体管的源极、晶体管漏极以及公共电极等金属电极，该第二子电极层202用于形成晶体管的栅极等金属电极。\n\n[0039]其中，该第一子电极层201包括间隔设置的源极金属电极2011、漏极金属电极2012以及公共电极2013；该第二子电极层202包括栅极金属电极2021。该反射功能层300覆盖源极金属电极2011、漏极金属电极2012、公共电极2013以及栅极金属电极2021。\n\n[0040]该反射功能层300包括多个反射块310，该多个反射块310与源极金属电极2011、漏极金属电极2012、公共电极2013以及栅极金属电极2021一一对应。例如，在源极金属电极2011上设置有反射块310，在漏极金属电极2012上设置有反射块310，在公共电极2013上设置有反射块310，在栅极金属电极2021上设置有反射块310，且各个反射块310均与相应的电极一一对应。\n\n[0041]在一些实施例中，各个反射块310的面积与相应的电极一致。在另一些实施例中，各个反射块310仅需将相应的电极覆盖即可，也即，各个反射块310的面积可大于相应的电极。\n\n[0042]在一些实施例中，该多个反射块310在基板100上的投影位于非发光区域上。在微型显示面板中，显示面板的发光区域占整个显示面板的比例较小，其余大部分为非发光区，为了降低非发光区中的电极层的反射率，可在电极层对应非发光区域上设置电极层300，从而可以极大的降低微型显示面板中电极层的反射率，进而提高显示质量。\n\n[0043]该显示面板10可以为微型发光二极管显示面板，由于微型发光二极管显示面板的发光区域占整个像素的比例较小，其余部分为非发光区域，因此，通过降低微型发光二极管显示面板的非发光区域的反射率，进而可以极大的降低微型发光二极管显示面板的反射率，提高显示质量。\n\n[0044]请继续参阅图1，该显示面板10包括：基板100、电极层200、反射功能层300、遮光金属层400、缓冲层500、层间介质层600、发光器件层700以及封装层800。\n\n[0045]其中，该基板100可以为透明玻璃基板，也可以为蓝宝石基板。\n\n[0046]其中，该遮光金属层400设置在基板100上。\n\n[0047]其中，该缓冲层500设置在基板100上，并覆盖遮光金属层400；该缓冲层500可采用二氧化硅或者氮化硅等绝缘材料沉积形成。该缓冲层500上还设置有导电沟道层901，位于该导电沟道层901上的绝缘层902，以及位于该绝缘层902上的第二子电极层202。\n\n[0048]其中，该层间介质层600采用二氧化硅或者氮化硅等绝缘材料沉积形成，该层间介质层600沉积于该导电沟道层901、该绝缘层902、该第二子电极层202以及该缓冲层500上。\n\n[0049]其中，该发光器件层700设置于第一子电极层201上。该发光器件层700包括阴极层701、阳极层703以及发光材料层702。其中，该发光材料层702位于阴极层701和阳极层703之间。也即，该发光器件层包括多个呈阵列排布的微型发光二极管。\n\n[0050]其中，该发光器件层700上还设置有封装层800以保护该发光器件层700。\n\n[0051]另外，本申请实施例中的显示面板，由于通过在电极层200上设置反射功能层300，可以减弱显示面板中金属电极反射外界光源的光线对显示面板造成的影响，故本申请实施中的显示面板并不需要额外设置偏光片来减弱显示面板中金属电极反射外界光源的光线对显示面板造成的影响，进而可以提高显示面板的光源利用率。\n\n[0052]由上可知，本申请实施例的显示面板通过在电极层上设置反射功能层，该反射功能层用于降低该电极层的反射率，即，当外界光源的光线射入显示面板时，光线需经过反射功能层，从而可以减弱显示面板中金属电极反射外界光源的光线对显示面板造成的影响，进而提高显示质量；并且本申请实施例中的显示面板并不需要使用偏光片来降低金属电极的反射率，从而可以提高显示面板的光能利用率。\n\n[0053]请参阅图3，图3为本申请实施例中的显示面板的另一种结构示意图。图3所示的显示面板与图1所示的显示面板的区别在于：图3所示的显示面板20中的封装层800的表面设置有纳米压印微结构900。本申请实施例通过在封装层800的表面设置纳米压印微结构900，可以提高显示面板20的发光效率和遏制产生镜面反射影像。\n\n[0054]其中，该封装层800的表面还设置有纳米压印微结构900。该纳米压印微结构900包括多个呈阵列式间隔分布于该封装层800的上表面的多个半球形状的纳米级凸起910。\n\n[0055]请参阅图4，图4为本申请实施例中的显示面板的再一种结构示意图。图4所示的显示面板与图1所示的显示面板的区别在于：图4所示的显示面板30中的基板100的第二表面102设置有黑色遮光胶110。本申请实施例通过在基板100的第二表面102设置有黑色遮光胶110，可以提高显示面板30的发光效率和遏制产生镜面反射影像。\n\n[0056]其中，该黑色遮光胶110覆盖基板100的第二表面102。\n\n[0057]本申请实施例还提供了一种显示装置，其包括以上任一实施例中的显示面板。具体可参照以上任一实施例中的显示面板的描述，在此不做赘述。\n\n[0058]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本申请涉及显示技术领域，特别涉及一种显示面板及显示装置。\n\n背景技术\n\n[0002]在传统的自发光器件中，例如目前量产的有机发光二极管显示装置，由于金属电极具有很高的反射率，使得金属电极可反射外界光源的光线，且显示面板反射的外界光源光线会严重影响自发光器件的显示品质。通常采用在自发光器件上增加一具有1/4波长相位延迟的偏光片，从而可以降低金属电极的反射率，进而提高自发光器件的显示质量。\n\n[0003]然而，由于偏光片成本高，且由于偏光片会使自发光器件的发光效率降低50％-60％左右，进而降低光能利用率。\n\n发明内容\n\n[0004]本申请实施例的目的是提供一种显示面板及显示装置，可以减弱显示面板中金属电极反射外界光源的光线对显示面板造成的影响，进而提高显示质量。\n\n[0005]本申请实施例提供一种显示面板，包括：\n\n[0006]基板，所述基板包括相对设置的第一表面和第二表面；\n\n[0007]电极层，所述电极层设置在所述基板的第一表面上；以及\n\n[0008]反射功能层，所述反射功能层设置在所述电极层上，用于降低所述电极层的反射率。\n\n[0009]在本申请所述的显示面板中，所述反射功能层包括层叠设置的第一金属子层、透明非金属子层、第二金属子层；其中，\n\n[0010]所述第一金属子层和所述第二金属子层的材料均包括钼金属材料、铬金属材料以及钨金属材料中的至少一种；所述透明非金属子层包括纳米铟锡金属氧化物材料、透明导电氧化物材料、铟镓锌氧化物材料、氧化硅材料以及氮化硅材料中的至少一种。\n\n[0011]在本申请所述的显示面板中，所述第一金属子层的厚度介于12纳米-40纳米之间，所述第二金属子层的厚度介于2纳米-15纳米之间，所述透明非金属子层的厚度介于3纳米-7纳米之间。\n\n[0012]在本申请所述的显示面板中，所述显示面板还包括：发光器件层以及封装层，所述发光器件层设置在所述反射功能层上，所述封装层设置在所述发光器件层上并覆盖所述反射功能层；其中，所述封装层的表面设置有纳米压印微结构。\n\n[0013]在本申请所述的显示面板中，所述纳米压印微结构包括多个呈阵列式间隔分布于所述封装层表面的多个半球形状的纳米级凸起。\n\n[0014]在本申请所述的显示面板中，所述发光器件层包括多个呈阵列排布的微型发光二极管，所述微型发光二极管设置在所述反射光能层上。\n\n[0015]在本申请所述的显示面板中，所述基板的第二表面设置有黑色遮光胶。\n\n[0016]在本申请所述的显示面板中，所述电极层包括第一子电极层和第二子电极层；所述第一子电极层包括间隔设置的源极金属电极、漏极金属电极以及公共电极，所述第二子电极层包括栅极金属电极；其中，所述反射功能层覆盖所述源极金属电极、所述漏极金属电极、所述公共电极以及所述栅极金属电极。\n\n[0017]在本申请所述的显示面板中，所述反射功能层包括多个反射块，所述多个反射块与所述源极金属电极、所述漏极金属电极、所述公共电极以及所述栅极金属电极一一对应。\n\n[0018]在本申请所述的显示面板中，所述多个反射块在所述基板上的投影位于非发光区域上。\n\n[0019]本申请实施例还提供一种显示装置，包括以上所述的显示面板。\n\n[0020]由上可知，本申请实施例的显示面板通过在电极层上设置反射功能层，该反射功能层用于降低该电极层的反射率，即，当外界光源的光线射入显示面板时，光线需经过反射功能层，从而可以减弱显示面板中金属电极反射外界光源的光线对显示面板造成的影响，进而提高显示质量；并且本申请实施例中的显示面板并不需要使用偏光片来降低金属电极的反射率，从而可以提高显示面板的光能利用率。\n\n附图说明\n\n[0021]为了更清楚地说明本申请实施例或现有技术中的技术方案，下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本申请的部分实施例，对于本领域普通技术人员而言，在不付出创造性劳动的前提下，还可以根据这些附图获取其他的附图。\n\n[0022]图1为本申请实施例中的显示面板的一种结构示意图；\n\n[0023]图2为本申请实施例中的显示面板的反射功能层的一种结构示意图；\n\n[0024]图3为本申请实施例中的显示面板的另一种结构示意图；\n\n[0025]图4为本申请实施例中的显示面板的再一种结构示意图。\n\n具体实施方式\n\n[0026]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0027]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0028]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0029]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0030]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0031]请参阅图1，图1为本申请实施例中的显示面板的一种结构示意图。如图1所示，本申请实施例的显示面板10包括：基板100、电极层200以及反射功能层300；其中，该基板100包括相对设置的第一表面101和第二表面102，该电极层200设置在基板100的第一表面101上，该反射功能层300设置在电极层200上。\n\n[0032]本申请实施例的显示面板通过在电极层200上设置反射功能层300，该反射功能层300用于降低电极层200的反射率。需要说明的是，由于电极层200具有很高的反射率，即当外界光源的光线射入显示面板10时，外界光源的光线能够通过电极层200将光线反射出去。\n\n[0033]在本申请实施例中，当外界光源的光线射入显示面板10时，外界光源的光线需经过反射功能层300，而不是直接射入电极层200，从而可以减弱显示面板10中电极层200反射外界光源的光线，进而提高显示质量。\n\n[0034]在一些实施例中，请参阅图2，图2为本申请实施例中的显示面板的反射功能层的一种结构示意图。结合图1、图2，该反射功能层300包括层叠设置的第一金属子层301、透明非金属子层302、第二金属子层303，该第一金属子层301、透明非金属子层302以及第二金属子层303依次层叠设置在电极层200上。也即，当外界光源的光线射入显示面板10时，光线依次经过第一金属子层301、透明非金属子层302、第二金属子层303和电极层200。\n\n[0035]其中，该第一金属子层301和第二金属子层303的材料均包括钼金属材料、铬金属材料以及钨金属材料中的至少一种；该透明非金属子层302包括纳米铟锡金属氧化物材料、透明导电氧化物材料、铟镓锌氧化物材料、氧化硅材料以及氮化硅材料中的至少一种。\n\n[0036]其中，该第一金属子层301的厚度介于12纳米-40纳米，该第二金属子层303的厚度介于2纳米-15纳米，该透明非金属子层302的厚度介于3纳米-7纳米。\n\n[0037]在一些实施例中，第二金属子层303的厚度小于第一金属子层301的厚度。\n\n[0038]在一些实施例中，请继续参阅图1，该电极层200包括第一子电极层201和第二子电极层202，该第一子电极层201和第二子电极层202位于不同层。需要说明的是，第一子电极层201和第二子电极层202上均设置有反射功能层300，且该第一子电极层201用于形成晶体管的源极、晶体管漏极以及公共电极等金属电极，该第二子电极层202用于形成晶体管的栅极等金属电极。\n\n[0039]其中，该第一子电极层201包括间隔设置的源极金属电极2011、漏极金属电极2012以及公共电极2013；该第二子电极层202包括栅极金属电极2021。该反射功能层300覆盖源极金属电极2011、漏极金属电极2012、公共电极2013以及栅极金属电极2021。\n\n[0040]该反射功能层300包括多个反射块310，该多个反射块310与源极金属电极2011、漏极金属电极2012、公共电极2013以及栅极金属电极2021一一对应。例如，在源极金属电极2011上设置有反射块310，在漏极金属电极2012上设置有反射块310，在公共电极2013上设置有反射块310，在栅极金属电极2021上设置有反射块310，且各个反射块310均与相应的电极一一对应。\n\n[0041]在一些实施例中，各个反射块310的面积与相应的电极一致。在另一些实施例中，各个反射块310仅需将相应的电极覆盖即可，也即，各个反射块310的面积可大于相应的电极。\n\n[0042]在一些实施例中，该多个反射块310在基板100上的投影位于非发光区域上。在微型显示面板中，显示面板的发光区域占整个显示面板的比例较小，其余大部分为非发光区，为了降低非发光区中的电极层的反射率，可在电极层对应非发光区域上设置电极层300，从而可以极大的降低微型显示面板中电极层的反射率，进而提高显示质量。\n\n[0043]该显示面板10可以为微型发光二极管显示面板，由于微型发光二极管显示面板的发光区域占整个像素的比例较小，其余部分为非发光区域，因此，通过降低微型发光二极管显示面板的非发光区域的反射率，进而可以极大的降低微型发光二极管显示面板的反射率，提高显示质量。\n\n[0044]请继续参阅图1，该显示面板10包括：基板100、电极层200、反射功能层300、遮光金属层400、缓冲层500、层间介质层600、发光器件层700以及封装层800。\n\n[0045]其中，该基板100可以为透明玻璃基板，也可以为蓝宝石基板。\n\n[0046]其中，该遮光金属层400设置在基板100上。\n\n[0047]其中，该缓冲层500设置在基板100上，并覆盖遮光金属层400；该缓冲层500可采用二氧化硅或者氮化硅等绝缘材料沉积形成。该缓冲层500上还设置有导电沟道层901，位于该导电沟道层901上的绝缘层902，以及位于该绝缘层902上的第二子电极层202。\n\n[0048]其中，该层间介质层600采用二氧化硅或者氮化硅等绝缘材料沉积形成，该层间介质层600沉积于该导电沟道层901、该绝缘层902、该第二子电极层202以及该缓冲层500上。\n\n[0049]其中，该发光器件层700设置于第一子电极层201上。该发光器件层700包括阴极层701、阳极层703以及发光材料层702。其中，该发光材料层702位于阴极层701和阳极层703之间。也即，该发光器件层包括多个呈阵列排布的微型发光二极管。\n\n[0050]其中，该发光器件层700上还设置有封装层800以保护该发光器件层700。\n\n[0051]另外，本申请实施例中的显示面板，由于通过在电极层200上设置反射功能层300，可以减弱显示面板中金属电极反射外界光源的光线对显示面板造成的影响，故本申请实施中的显示面板并不需要额外设置偏光片来减弱显示面板中金属电极反射外界光源的光线对显示面板造成的影响，进而可以提高显示面板的光源利用率。\n\n[0052]由上可知，本申请实施例的显示面板通过在电极层上设置反射功能层，该反射功能层用于降低该电极层的反射率，即，当外界光源的光线射入显示面板时，光线需经过反射功能层，从而可以减弱显示面板中金属电极反射外界光源的光线对显示面板造成的影响，进而提高显示质量；并且本申请实施例中的显示面板并不需要使用偏光片来降低金属电极的反射率，从而可以提高显示面板的光能利用率。\n\n[0053]请参阅图3，图3为本申请实施例中的显示面板的另一种结构示意图。图3所示的显示面板与图1所示的显示面板的区别在于：图3所示的显示面板20中的封装层800的表面设置有纳米压印微结构900。本申请实施例通过在封装层800的表面设置纳米压印微结构900，可以提高显示面板20的发光效率和遏制产生镜面反射影像。\n\n[0054]其中，该封装层800的表面还设置有纳米压印微结构900。该纳米压印微结构900包括多个呈阵列式间隔分布于该封装层800的上表面的多个半球形状的纳米级凸起910。\n\n[0055]请参阅图4，图4为本申请实施例中的显示面板的再一种结构示意图。图4所示的显示面板与图1所示的显示面板的区别在于：图4所示的显示面板30中的基板100的第二表面102设置有黑色遮光胶110。本申请实施例通过在基板100的第二表面102设置有黑色遮光胶110，可以提高显示面板30的发光效率和遏制产生镜面反射影像。\n\n[0056]其中，该黑色遮光胶110覆盖基板100的第二表面102。\n\n[0057]本申请实施例还提供了一种显示装置，其包括以上任一实施例中的显示面板。具体可参照以上任一实施例中的显示面板的描述，在此不做赘述。\n\n[0058]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10638, 23692, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示面板及其制备方法。\n\n背景技术\n\n[0002]目前已知的大多数柔性显示屏只能进行一般的弯曲变形，无法进行球面弯曲或拉伸等弹性形变，无法应用到需要有拉伸变形或球面变形的应用上。LCD显示屏限于其背光、cell gap(盒厚)不能大幅度变形，导致无法其进行拉伸变形，OLED显示屏由于其材料对水氧非常敏感，对封装要求非常严格，因此也很难进行弹性形变。\n\n[0003]因此，现有技术存在缺陷，急需改进。\n\n发明内容\n\n[0004]本发明提供一种显示面板及其制备方法，能够实现显示面板的球面变形或拉伸变形等多维度变形。\n\n[0005]为解决上述问题，本发明提供的技术方案如下：\n\n[0006]本发明提供一种显示面板的制备方法，所述方法包括以下步骤：\n\n[0007]步骤S10，在玻璃基板上制备柔性衬底层，所述柔性衬底层包括对应像素单元的像素预留区域，以及对应相邻两所述像素单元之间的金属布线预留区域；图案化所述柔性衬底层，形成对应所述金属布线预留区域的凸起或凹陷；\n\n[0008]步骤S20，在所述柔性衬底层对应所述像素预留区域的位置依次形成阵列分布的薄膜晶体管单元和所述像素单元，并且形成连接所述薄膜晶体管单元以及连接所述像素单元的信号走线，所述信号走线对应所述金属布线预留区域的部分呈曲线状布设于的所述凸起或所述凹陷上；\n\n[0009]步骤S30，在所述像素单元上形成顶部弹性封装层，且所述顶部弹性封装层对应所述像素预留区域以及所述金属布线预留区域；\n\n[0010]步骤S40，剥离所述玻璃基板，以形成具有球面变形或拉伸变形的显示面板。\n\n[0011]根据本发明一实施例，所述金属布线预留区域将相邻两所述像素预留区域间隔开，所述凸起或所述凹陷对应相邻两所述像素预留区域之间呈间隔分布。\n\n[0012]根据本发明一实施例，所述信号走线对应相邻两所述像素预留区域之间的部分的形状与所述凸起或所述凹陷的形状相匹配。\n\n[0013]根据本发明一实施例，所述步骤S20中包括以下步骤：\n\n[0014]步骤S201，在所述柔性衬底层上进行薄膜晶体管层的制备，所述薄膜晶体管层包括制备于无机膜层中的薄膜晶体管和第一类信号走线，所述薄膜晶体管对应制备于所述像素预留区域，其中，在所述第一类信号走线布设之前以及之后，将所述金属布线预留区域对应的所述无机膜层的部分去除，形成阵列的所述薄膜晶体管单元。\n\n[0015]根据本发明一实施例，所述步骤S20还包括以下步骤：\n\n[0016]步骤S202，在所述薄膜晶体管单元上制备第一电极层，图案化后形成对应所述像素预留区域的第一电极，以及形成与所述第一电极间隔设置的第二类信号走线；其中，所述第二类信号走线对应所述金属布线预留区域的部分呈曲线状设置于所述凸起或所述凹陷上，且与所述第一类信号走线绝缘；\n\n[0017]步骤S203，在所述第一电极上制备像素定义层，图案化去除所述像素定义层对应所述金属布线预留区域的部分，并在所述像素预留区域定义出像素区域；\n\n[0018]步骤S204，将微发光二极管对应所述像素区域绑定于所述第一电极上；\n\n[0019]步骤S205，在所述微发光二极管上制备第二电极层，图案化后形成对应所述像素预留区域的第二电极。\n\n[0020]根据本发明一实施例，所述步骤S40还包括以下步骤：\n\n[0021]步骤S401，在所述顶部弹性封装层的表面贴合运载基板；\n\n[0022]步骤S402，对所述柔性衬底层进行减薄处理，以去除对应所述金属布线预留区域的所述柔性衬底层的部分，形成间隔分布的柔性衬底单元；\n\n[0023]步骤S403，在所述柔性衬底单元上制备底部弹性封装层，使得对应所述金属布线预留区域的所述信号走线夹设于所述顶部弹性封装层与所述底部弹性封装层之间；\n\n[0024]步骤S404，剥离所述运载基板。\n\n[0025]本发明还提供一种显示面板，包括：\n\n[0026]底部弹性封装层，包括对应像素单元的像素预留区域以及对应相邻两所述像素单元之间的金属布线预留区域；\n\n[0027]柔性衬底单元，对应所述像素预留区域阵列的设置于所述底部弹性封装层上；\n\n[0028]在所述柔性衬底单元上依次层叠设置有薄膜晶体管单元以及所述像素单元，形成独立间隔的显示单元；\n\n[0029]信号走线，用于连接相邻两所述显示单元，以实现相邻两所述显示单元的信号传输；\n\n[0030]顶部弹性封装层，设置于所述显示单元表面；\n\n[0031]其中，所述信号走线对应所述金属布线预留区域的部分呈曲线设置，且夹设于所述底部弹性封装层与所述顶部弹性封装层的表面，以实现所述显示面板的球面变形或拉伸变形。\n\n[0032]根据本发明一实施例，所述像素单元包括相对设置的第一电极、第二电极，以及夹设于所述第一电极与所述第二电极之间的微发光二极管。\n\n[0033]根据本发明一实施例，所述信号走线对应所述金属布线预留区域的部分的长度大于相邻两所述像素预留区域之间的距离。\n\n[0034]根据本发明一实施例，所述底部弹性封装层以及所述顶部弹性封装层的材料为聚二甲基硅氧烷。\n\n[0035]本发明的有益效果为：相较于现有的显示面板，本发明提供的显示面板及其制备方法，通过在分立的柔性衬底单元上制作薄膜晶体管单元及绑定微发光二极管(MicroLED)，形成分立的显示单元，并对像素间的信号走线做延长处理，再通过弹性封装层进行封装，使得显示面板可以进行球面变形或拉伸变形等多维度形变而不破坏面板显示特性，可以满足特定场合要求。\n\n附图说明\n\n[0036]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0037]图1为本发明实施例提供的显示面板的制备方法流程图；\n\n[0038]图2A～2I为本发明实施例提供的显示面板的制备方法流程示意图；\n\n[0039]图3为本发明实施例提供的显示面板的结构示意图；\n\n[0040]图4为本发明实施例提供的显示面板的信号走线布线示意图。\n\n具体实施方式\n\n[0041]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0042]本发明针对现有技术的显示面板，由于无法进行球面弯曲或拉伸等多维素弹性形变，而不能满足特定场合需求的技术问题，本实施例能够解决该缺陷。\n\n[0043]如图1所示，为本发明实施例提供的显示面板的制备方法流程图；图2A～2I为本发明实施例提供的显示面板的制备方法流程示意图。所述方法包括以下步骤：\n\n[0044]步骤S10，在玻璃基板上制备柔性衬底层，所述柔性衬底层包括对应像素单元的像素预留区域，以及对应相邻两所述像素单元之间的金属布线预留区域；图案化所述柔性衬底层，形成对应所述金属布线预留区域的凸起或凹陷；\n\n[0045]具体参照图2A～2B所示，提供一玻璃基板20，并在所述玻璃基板20上制备一层柔性衬底层21，所述柔性衬底层21包括对应像素单元的像素预留区域210，以及对应相邻两所述像素单元之间的金属布线预留区域211；图案化所述柔性衬底层21，形成对应所述金属布线预留区域211的凸起21A或凹陷21B。其中，所述金属布线预留区域211将相邻两所述像素预留区域210间隔开，所述凸起21A或所述凹陷21B对应相邻两所述像素预留区域210之间呈间隔分布。\n\n[0046]所述凸起21A及所述凹陷21B的截面形状为梯形、三角形、半圆等形状均可；另外，所述凸起21A及所述凹陷21B可以呈直线间隔分布，也可以呈曲线、圆环等形状分布。此处对所述凸起21A及所述凹陷21B的形状、大小以及排列方式不做限定，只要能使得布设于此处的信号走线的长度大于相邻两所述像素预留区域210之间的直线距离的设计均可。\n\n[0047]如图2C所示，在所述步骤S10之后还包括以下步骤：在所述柔性衬底层21上制备一层缓冲层22，图案化去除所述缓冲层22对应所述金属布线预留区域211的部分。\n\n[0048]步骤S20，在所述柔性衬底层对应所述像素预留区域的位置依次形成阵列分布的薄膜晶体管单元和所述像素单元，并且形成连接所述薄膜晶体管单元以及连接所述像素单元的信号走线，所述信号走线对应所述金属布线预留区域的部分呈曲线状布设于的所述凸起或所述凹陷上；\n\n[0049]具体地，所述步骤S20中包括以下步骤：\n\n[0050]步骤S201，在所述柔性衬底层上进行薄膜晶体管层的制备，所述薄膜晶体管层包括制备于无机膜层中的薄膜晶体管和第一类信号走线，所述薄膜晶体管对应制备于所述像素预留区域，其中，在所述第一类信号走线布设之前以及之后，将所述金属布线预留区域对应的所述无机膜层的部分去除，形成阵列的所述薄膜晶体管单元。\n\n[0051]如图2D所示，在所述缓冲层22上制备薄膜晶体管层，其中，所述薄膜晶体管层的膜层结构与现有技术中一致，此处不再赘述。值得注意的是，在第一类信号走线230布线之前，将所述金属布线预留区域211对应的所述无机膜层的部分去除掉，将所述第一类信号走线230直接布设于所述柔性衬底层21的所述凸起21A及所述凹陷21B的位置。当然，在所述第一类信号走线230布线完成之后，可能还会继续制备所述薄膜晶体管层中的所述无机膜层，在所述薄膜晶体管层制备完成后，将所述第一类信号走线230对应所述金属布线预留区域211的部分覆盖的所述无机膜层去除，使所述金属布线预留区域211只保留所述第一类信号走线230，从而形成相互独立的薄膜晶体管单元23。\n\n[0052]其中，所述第一类信号走线230包括但不限于连接相邻两所述薄膜晶体管单元23的扫描线与数据线，只要在形成所述薄膜晶体管层的过程中布设的信号走线均属于所述第一类信号走线230。所述第一类信号走线230在对应所述金属布线预留区域211的部分呈曲线状排布，可以理解的是，所述第一类信号走线230中的不同信号走线相互绝缘设置。\n\n[0053]优选的，所述第一类信号走线230对应相邻两所述像素预留区域210之间的部分的形状与所述凸起21A或所述凹陷21B的形状相匹配。\n\n[0054]所述薄膜晶体管单元23制备完成后，在所述薄膜晶体管单元23表面制备一层平坦层24，图案化后去除所述平坦层24对应所述金属布线预留区域211的部分。\n\n[0055]步骤S202，在所述薄膜晶体管单元上制备第一电极层，图案化后形成对应所述像素预留区域的第一电极，以及形成与所述第一电极间隔设置的第二类信号走线；其中，所述第二类信号走线对应所述金属布线预留区域的部分呈曲线状设置于所述凸起或所述凹陷上，且与所述第一类信号走线绝缘；\n\n[0056]步骤S203，在所述第一电极上制备像素定义层，图案化去除所述像素定义层对应所述金属布线预留区域的部分，并在所述像素预留区域定义出像素区域；\n\n[0057]步骤S204，将微发光二极管对应所述像素区域绑定于所述第一电极上；\n\n[0058]步骤S205，在所述微发光二极管上制备第二电极层，图案化后形成对应所述像素预留区域的第二电极。\n\n[0059]所述步骤S202至所述步骤S205，请参照图2E所示，所述第一电极层经图案化后形成对应所述像素预留区域210的第一电极250，以及形成与所述第一电极250间隔设置的第一信号走线(图中未标示)；所述第一信号走线的布设方式与所述第一类信号走线230的布设方式一致，均直接布设于所述柔性衬底层21上，此处不再赘述。然后在所述第一电极层上制备像素定义层26并进行图案化，去除所述像素定义层26对应所述金属布线预留区域211的部分，并定义出像素区域。\n\n[0060]之后，将微发光二极管251转移至所述像素区域，并将其与所述第一电极250绑定；由于所述微发光二极管251的体积占比小不能填满所述像素区域，因此，在所述微发光二极管251之外的所述像素区域进行封装填充，可以填充无机材料或有机材料或者无机-有机混合材料，此处不做限制。\n\n[0061]接着，制备第二电极层并进行图案化，形成与所述第一电极250相对设置的第二电极252，以及与所述第二电极252间隔设置的第二信号走线(图中未标示)，所述第二信号走线与所述第一类信号走线230的布设方式一致。所述第一电极250与所述微发光二极管251以及所述第二电极252形成像素单元25，所述像素单元25与所述薄膜晶体管单元23电性连接且形成多个间隔设置的显示单元。\n\n[0062]其中，所述第二类信号走线包括但不限于所述第一信号走线与所述第二信号走线，只要在所述像素单元25制备的过程中形成的信号走线均属于所述第二类信号走线。\n\n[0063]步骤S30，在所述像素单元上形成顶部弹性封装层，且所述顶部弹性封装层对应所述像素预留区域以及所述金属布线预留区域；\n\n[0064]如图2F所示，在所述像素单元25上形成顶部弹性封装层27，所述顶部弹性封装层27对应所述像素预留区域210以及所述金属布线预留区域211，即所述顶部弹性封装层27封装整个所述显示面板。可以理解的是，所述顶部弹性封装层27填满相邻两所述显示单元之间的间隙，并形成较为平整的表面。\n\n[0065]步骤S40，剥离所述玻璃基板，以形成具有球面变形或拉伸变形的显示面板。\n\n[0066]其中，所述步骤S40还包括以下步骤：\n\n[0067]步骤S401，在所述顶部弹性封装层的表面贴合运载基板；\n\n[0068]具体如图2G所示，将所述玻璃基板20与所述柔性衬底层21剥离，然后在所述顶部弹性封装层27表面通过粘合胶层贴合运载基板28。\n\n[0069]在所述步骤S401之后还包括以下步骤：\n\n[0070]步骤S402，对所述柔性衬底层进行减薄处理，以去除对应所述金属布线预留区域的所述柔性衬底层的部分，形成间隔分布的柔性衬底单元；\n\n[0071]具体如图2H所示，对所述柔性衬底层21进行减薄处理后，形成对应所述像素预留区域210独立的柔性衬底单元21C。\n\n[0072]步骤S403，在所述柔性衬底单元上制备底部弹性封装层，使得对应所述金属布线预留区域的所述信号走线夹设于所述顶部弹性封装层与所述底部弹性封装层之间；\n\n[0073]步骤S404，剥离所述运载基板。\n\n[0074]具体如图2I所示，在所述柔性衬底单元21C背向所述像素单元25的一侧表面制备底部弹性封装层29，所述底部弹性封装层29对应所述像素预留区域210以及所述金属布线预留区域211，并剥离所述运载基板28。相邻两所述显示单元之间的所述第一类信号走线230以及所述第二类信号走线均夹设于所述顶部弹性封装层27与所述底部弹性封装层29之间。\n\n[0075]由于所述显示面板的所述显示单元为分立式设计，又对两所述显示单元之间的所述信号走线进行延长处理，且所述显示单元以及所述信号走线均被弹性封装层所保护，因此可以实现所述显示面板的球面变形或拉伸变形等多维度形变而不破坏面板显示特性。\n\n[0076]在另一实施例提供的所述显示面板的制备方法中，其与上述实施例的区别特征在于：该实施例的制备方法不包含上述实施例中的所述步骤S401至所述步骤S404；也就是说，该实施例在形成所述顶部弹性封装层之后，再剥离掉所述玻璃基板即可形成具有球面变形或拉伸变形的显示面板。所述信号走线夹设于所述顶部弹性封装层以及所述柔性衬底层之间，由于所述柔性衬底层具有柔性特质，因此不影响所述显示面板进行多维度形变，具体方法可参照上述实施例，此处不再赘述。\n\n[0077]如图3所示，为本发明实施例提供的显示面板结构示意图，所述显示面板包括：底部弹性封装层30，其包括对应像素单元的像素预留区域以及对应相邻两所述像素单元之间的金属布线预留区域；柔性衬底单元31，对应所述像素预留区域阵列的设置于所述底部弹性封装层30上；在所述柔性衬底单元31上依次层叠设置有薄膜晶体管单元以及所述像素单元，形成独立间隔的显示单元32；所述像素单元包括相对设置的第一电极、第二电极，以及夹设于所述第一电极与所述第二电极之间的微发光二极管；信号走线33，用于连接相邻两所述显示单元32，以实现相邻两所述显示单元32的信号传输；顶部弹性封装层34，设置于所述显示单元32表面；其中，所述信号走线33对应所述金属布线预留区域的部分呈曲线设置，且夹设于所述底部弹性封装层30与所述顶部弹性封装层34的表面，以实现所述显示面板的球面变形或拉伸变形。\n\n[0078]优选的，所述信号走线33对应所述金属布线预留区域的部分的长度大于相邻两所述像素预留区域之间的距离。\n\n[0079]优选的，所述底部弹性封装层30以及所述顶部弹性封装层34的材料为聚二甲基硅氧烷。\n\n[0080]所述显示面板的具体膜层结构请参照图2A～2I以及上述实施例中的描述，此处不再赘述。\n\n[0081]如图4所示，为本发明实施例提供的显示面板的信号走线布线示意图；所述显示面板包括像素预留区域43，以及对应所述像素预留区域43之外的金属布线预留区域45，薄膜晶体管44以及像素单元对应所述像素预留区域43制备，以形成分立设置的显示单元，所述信号走线连接相邻两所述显示单元，所述信号走线对应所述金属布线预留区域45的部分呈曲线排布，使得所述信号走线对应所述金属布线预留区域45的部分的走线长度大于相邻两所述像素预留区域43之间的直线距离。其中，所述信号走线包括但不限于高电位源线41、扫描线42以及数据线40。\n\n[0082]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示面板及其制备方法。\n\n背景技术\n\n[0002]目前已知的大多数柔性显示屏只能进行一般的弯曲变形，无法进行球面弯曲或拉伸等弹性形变，无法应用到需要有拉伸变形或球面变形的应用上。LCD显示屏限于其背光、cell gap(盒厚)不能大幅度变形，导致无法其进行拉伸变形，OLED显示屏由于其材料对水氧非常敏感，对封装要求非常严格，因此也很难进行弹性形变。\n\n[0003]因此，现有技术存在缺陷，急需改进。\n\n发明内容\n\n[0004]本发明提供一种显示面板及其制备方法，能够实现显示面板的球面变形或拉伸变形等多维度变形。\n\n[0005]为解决上述问题，本发明提供的技术方案如下：\n\n[0006]本发明提供一种显示面板的制备方法，所述方法包括以下步骤：\n\n[0007]步骤S10，在玻璃基板上制备柔性衬底层，所述柔性衬底层包括对应像素单元的像素预留区域，以及对应相邻两所述像素单元之间的金属布线预留区域；图案化所述柔性衬底层，形成对应所述金属布线预留区域的凸起或凹陷；\n\n[0008]步骤S20，在所述柔性衬底层对应所述像素预留区域的位置依次形成阵列分布的薄膜晶体管单元和所述像素单元，并且形成连接所述薄膜晶体管单元以及连接所述像素单元的信号走线，所述信号走线对应所述金属布线预留区域的部分呈曲线状布设于的所述凸起或所述凹陷上；\n\n[0009]步骤S30，在所述像素单元上形成顶部弹性封装层，且所述顶部弹性封装层对应所述像素预留区域以及所述金属布线预留区域；\n\n[0010]步骤S40，剥离所述玻璃基板，以形成具有球面变形或拉伸变形的显示面板。\n\n[0011]根据本发明一实施例，所述金属布线预留区域将相邻两所述像素预留区域间隔开，所述凸起或所述凹陷对应相邻两所述像素预留区域之间呈间隔分布。\n\n[0012]根据本发明一实施例，所述信号走线对应相邻两所述像素预留区域之间的部分的形状与所述凸起或所述凹陷的形状相匹配。\n\n[0013]根据本发明一实施例，所述步骤S20中包括以下步骤：\n\n[0014]步骤S201，在所述柔性衬底层上进行薄膜晶体管层的制备，所述薄膜晶体管层包括制备于无机膜层中的薄膜晶体管和第一类信号走线，所述薄膜晶体管对应制备于所述像素预留区域，其中，在所述第一类信号走线布设之前以及之后，将所述金属布线预留区域对应的所述无机膜层的部分去除，形成阵列的所述薄膜晶体管单元。\n\n[0015]根据本发明一实施例，所述步骤S20还包括以下步骤：\n\n[0016]步骤S202，在所述薄膜晶体管单元上制备第一电极层，图案化后形成对应所述像素预留区域的第一电极，以及形成与所述第一电极间隔设置的第二类信号走线；其中，所述第二类信号走线对应所述金属布线预留区域的部分呈曲线状设置于所述凸起或所述凹陷上，且与所述第一类信号走线绝缘；\n\n[0017]步骤S203，在所述第一电极上制备像素定义层，图案化去除所述像素定义层对应所述金属布线预留区域的部分，并在所述像素预留区域定义出像素区域；\n\n[0018]步骤S204，将微发光二极管对应所述像素区域绑定于所述第一电极上；\n\n[0019]步骤S205，在所述微发光二极管上制备第二电极层，图案化后形成对应所述像素预留区域的第二电极。\n\n[0020]根据本发明一实施例，所述步骤S40还包括以下步骤：\n\n[0021]步骤S401，在所述顶部弹性封装层的表面贴合运载基板；\n\n[0022]步骤S402，对所述柔性衬底层进行减薄处理，以去除对应所述金属布线预留区域的所述柔性衬底层的部分，形成间隔分布的柔性衬底单元；\n\n[0023]步骤S403，在所述柔性衬底单元上制备底部弹性封装层，使得对应所述金属布线预留区域的所述信号走线夹设于所述顶部弹性封装层与所述底部弹性封装层之间；\n\n[0024]步骤S404，剥离所述运载基板。\n\n[0025]本发明还提供一种显示面板，包括：\n\n[0026]底部弹性封装层，包括对应像素单元的像素预留区域以及对应相邻两所述像素单元之间的金属布线预留区域；\n\n[0027]柔性衬底单元，对应所述像素预留区域阵列的设置于所述底部弹性封装层上；\n\n[0028]在所述柔性衬底单元上依次层叠设置有薄膜晶体管单元以及所述像素单元，形成独立间隔的显示单元；\n\n[0029]信号走线，用于连接相邻两所述显示单元，以实现相邻两所述显示单元的信号传输；\n\n[0030]顶部弹性封装层，设置于所述显示单元表面；\n\n[0031]其中，所述信号走线对应所述金属布线预留区域的部分呈曲线设置，且夹设于所述底部弹性封装层与所述顶部弹性封装层的表面，以实现所述显示面板的球面变形或拉伸变形。\n\n[0032]根据本发明一实施例，所述像素单元包括相对设置的第一电极、第二电极，以及夹设于所述第一电极与所述第二电极之间的微发光二极管。\n\n[0033]根据本发明一实施例，所述信号走线对应所述金属布线预留区域的部分的长度大于相邻两所述像素预留区域之间的距离。\n\n[0034]根据本发明一实施例，所述底部弹性封装层以及所述顶部弹性封装层的材料为聚二甲基硅氧烷。\n\n[0035]本发明的有益效果为：相较于现有的显示面板，本发明提供的显示面板及其制备方法，通过在分立的柔性衬底单元上制作薄膜晶体管单元及绑定微发光二极管(MicroLED)，形成分立的显示单元，并对像素间的信号走线做延长处理，再通过弹性封装层进行封装，使得显示面板可以进行球面变形或拉伸变形等多维度形变而不破坏面板显示特性，可以满足特定场合要求。\n\n附图说明\n\n[0036]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0037]图1为本发明实施例提供的显示面板的制备方法流程图；\n\n[0038]图2A～2I为本发明实施例提供的显示面板的制备方法流程示意图；\n\n[0039]图3为本发明实施例提供的显示面板的结构示意图；\n\n[0040]图4为本发明实施例提供的显示面板的信号走线布线示意图。\n\n具体实施方式\n\n[0041]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0042]本发明针对现有技术的显示面板，由于无法进行球面弯曲或拉伸等多维素弹性形变，而不能满足特定场合需求的技术问题，本实施例能够解决该缺陷。\n\n[0043]如图1所示，为本发明实施例提供的显示面板的制备方法流程图；图2A～2I为本发明实施例提供的显示面板的制备方法流程示意图。所述方法包括以下步骤：\n\n[0044]步骤S10，在玻璃基板上制备柔性衬底层，所述柔性衬底层包括对应像素单元的像素预留区域，以及对应相邻两所述像素单元之间的金属布线预留区域；图案化所述柔性衬底层，形成对应所述金属布线预留区域的凸起或凹陷；\n\n[0045]具体参照图2A～2B所示，提供一玻璃基板20，并在所述玻璃基板20上制备一层柔性衬底层21，所述柔性衬底层21包括对应像素单元的像素预留区域210，以及对应相邻两所述像素单元之间的金属布线预留区域211；图案化所述柔性衬底层21，形成对应所述金属布线预留区域211的凸起21A或凹陷21B。其中，所述金属布线预留区域211将相邻两所述像素预留区域210间隔开，所述凸起21A或所述凹陷21B对应相邻两所述像素预留区域210之间呈间隔分布。\n\n[0046]所述凸起21A及所述凹陷21B的截面形状为梯形、三角形、半圆等形状均可；另外，所述凸起21A及所述凹陷21B可以呈直线间隔分布，也可以呈曲线、圆环等形状分布。此处对所述凸起21A及所述凹陷21B的形状、大小以及排列方式不做限定，只要能使得布设于此处的信号走线的长度大于相邻两所述像素预留区域210之间的直线距离的设计均可。\n\n[0047]如图2C所示，在所述步骤S10之后还包括以下步骤：在所述柔性衬底层21上制备一层缓冲层22，图案化去除所述缓冲层22对应所述金属布线预留区域211的部分。\n\n[0048]步骤S20，在所述柔性衬底层对应所述像素预留区域的位置依次形成阵列分布的薄膜晶体管单元和所述像素单元，并且形成连接所述薄膜晶体管单元以及连接所述像素单元的信号走线，所述信号走线对应所述金属布线预留区域的部分呈曲线状布设于的所述凸起或所述凹陷上；\n\n[0049]具体地，所述步骤S20中包括以下步骤：\n\n[0050]步骤S201，在所述柔性衬底层上进行薄膜晶体管层的制备，所述薄膜晶体管层包括制备于无机膜层中的薄膜晶体管和第一类信号走线，所述薄膜晶体管对应制备于所述像素预留区域，其中，在所述第一类信号走线布设之前以及之后，将所述金属布线预留区域对应的所述无机膜层的部分去除，形成阵列的所述薄膜晶体管单元。\n\n[0051]如图2D所示，在所述缓冲层22上制备薄膜晶体管层，其中，所述薄膜晶体管层的膜层结构与现有技术中一致，此处不再赘述。值得注意的是，在第一类信号走线230布线之前，将所述金属布线预留区域211对应的所述无机膜层的部分去除掉，将所述第一类信号走线230直接布设于所述柔性衬底层21的所述凸起21A及所述凹陷21B的位置。当然，在所述第一类信号走线230布线完成之后，可能还会继续制备所述薄膜晶体管层中的所述无机膜层，在所述薄膜晶体管层制备完成后，将所述第一类信号走线230对应所述金属布线预留区域211的部分覆盖的所述无机膜层去除，使所述金属布线预留区域211只保留所述第一类信号走线230，从而形成相互独立的薄膜晶体管单元23。\n\n[0052]其中，所述第一类信号走线230包括但不限于连接相邻两所述薄膜晶体管单元23的扫描线与数据线，只要在形成所述薄膜晶体管层的过程中布设的信号走线均属于所述第一类信号走线230。所述第一类信号走线230在对应所述金属布线预留区域211的部分呈曲线状排布，可以理解的是，所述第一类信号走线230中的不同信号走线相互绝缘设置。\n\n[0053]优选的，所述第一类信号走线230对应相邻两所述像素预留区域210之间的部分的形状与所述凸起21A或所述凹陷21B的形状相匹配。\n\n[0054]所述薄膜晶体管单元23制备完成后，在所述薄膜晶体管单元23表面制备一层平坦层24，图案化后去除所述平坦层24对应所述金属布线预留区域211的部分。\n\n[0055]步骤S202，在所述薄膜晶体管单元上制备第一电极层，图案化后形成对应所述像素预留区域的第一电极，以及形成与所述第一电极间隔设置的第二类信号走线；其中，所述第二类信号走线对应所述金属布线预留区域的部分呈曲线状设置于所述凸起或所述凹陷上，且与所述第一类信号走线绝缘；\n\n[0056]步骤S203，在所述第一电极上制备像素定义层，图案化去除所述像素定义层对应所述金属布线预留区域的部分，并在所述像素预留区域定义出像素区域；\n\n[0057]步骤S204，将微发光二极管对应所述像素区域绑定于所述第一电极上；\n\n[0058]步骤S205，在所述微发光二极管上制备第二电极层，图案化后形成对应所述像素预留区域的第二电极。\n\n[0059]所述步骤S202至所述步骤S205，请参照图2E所示，所述第一电极层经图案化后形成对应所述像素预留区域210的第一电极250，以及形成与所述第一电极250间隔设置的第一信号走线(图中未标示)；所述第一信号走线的布设方式与所述第一类信号走线230的布设方式一致，均直接布设于所述柔性衬底层21上，此处不再赘述。然后在所述第一电极层上制备像素定义层26并进行图案化，去除所述像素定义层26对应所述金属布线预留区域211的部分，并定义出像素区域。\n\n[0060]之后，将微发光二极管251转移至所述像素区域，并将其与所述第一电极250绑定；由于所述微发光二极管251的体积占比小不能填满所述像素区域，因此，在所述微发光二极管251之外的所述像素区域进行封装填充，可以填充无机材料或有机材料或者无机-有机混合材料，此处不做限制。\n\n[0061]接着，制备第二电极层并进行图案化，形成与所述第一电极250相对设置的第二电极252，以及与所述第二电极252间隔设置的第二信号走线(图中未标示)，所述第二信号走线与所述第一类信号走线230的布设方式一致。所述第一电极250与所述微发光二极管251以及所述第二电极252形成像素单元25，所述像素单元25与所述薄膜晶体管单元23电性连接且形成多个间隔设置的显示单元。\n\n[0062]其中，所述第二类信号走线包括但不限于所述第一信号走线与所述第二信号走线，只要在所述像素单元25制备的过程中形成的信号走线均属于所述第二类信号走线。\n\n[0063]步骤S30，在所述像素单元上形成顶部弹性封装层，且所述顶部弹性封装层对应所述像素预留区域以及所述金属布线预留区域；\n\n[0064]如图2F所示，在所述像素单元25上形成顶部弹性封装层27，所述顶部弹性封装层27对应所述像素预留区域210以及所述金属布线预留区域211，即所述顶部弹性封装层27封装整个所述显示面板。可以理解的是，所述顶部弹性封装层27填满相邻两所述显示单元之间的间隙，并形成较为平整的表面。\n\n[0065]步骤S40，剥离所述玻璃基板，以形成具有球面变形或拉伸变形的显示面板。\n\n[0066]其中，所述步骤S40还包括以下步骤：\n\n[0067]步骤S401，在所述顶部弹性封装层的表面贴合运载基板；\n\n[0068]具体如图2G所示，将所述玻璃基板20与所述柔性衬底层21剥离，然后在所述顶部弹性封装层27表面通过粘合胶层贴合运载基板28。\n\n[0069]在所述步骤S401之后还包括以下步骤：\n\n[0070]步骤S402，对所述柔性衬底层进行减薄处理，以去除对应所述金属布线预留区域的所述柔性衬底层的部分，形成间隔分布的柔性衬底单元；\n\n[0071]具体如图2H所示，对所述柔性衬底层21进行减薄处理后，形成对应所述像素预留区域210独立的柔性衬底单元21C。\n\n[0072]步骤S403，在所述柔性衬底单元上制备底部弹性封装层，使得对应所述金属布线预留区域的所述信号走线夹设于所述顶部弹性封装层与所述底部弹性封装层之间；\n\n[0073]步骤S404，剥离所述运载基板。\n\n[0074]具体如图2I所示，在所述柔性衬底单元21C背向所述像素单元25的一侧表面制备底部弹性封装层29，所述底部弹性封装层29对应所述像素预留区域210以及所述金属布线预留区域211，并剥离所述运载基板28。相邻两所述显示单元之间的所述第一类信号走线230以及所述第二类信号走线均夹设于所述顶部弹性封装层27与所述底部弹性封装层29之间。\n\n[0075]由于所述显示面板的所述显示单元为分立式设计，又对两所述显示单元之间的所述信号走线进行延长处理，且所述显示单元以及所述信号走线均被弹性封装层所保护，因此可以实现所述显示面板的球面变形或拉伸变形等多维度形变而不破坏面板显示特性。\n\n[0076]在另一实施例提供的所述显示面板的制备方法中，其与上述实施例的区别特征在于：该实施例的制备方法不包含上述实施例中的所述步骤S401至所述步骤S404；也就是说，该实施例在形成所述顶部弹性封装层之后，再剥离掉所述玻璃基板即可形成具有球面变形或拉伸变形的显示面板。所述信号走线夹设于所述顶部弹性封装层以及所述柔性衬底层之间，由于所述柔性衬底层具有柔性特质，因此不影响所述显示面板进行多维度形变，具体方法可参照上述实施例，此处不再赘述。\n\n[0077]如图3所示，为本发明实施例提供的显示面板结构示意图，所述显示面板包括：底部弹性封装层30，其包括对应像素单元的像素预留区域以及对应相邻两所述像素单元之间的金属布线预留区域；柔性衬底单元31，对应所述像素预留区域阵列的设置于所述底部弹性封装层30上；在所述柔性衬底单元31上依次层叠设置有薄膜晶体管单元以及所述像素单元，形成独立间隔的显示单元32；所述像素单元包括相对设置的第一电极、第二电极，以及夹设于所述第一电极与所述第二电极之间的微发光二极管；信号走线33，用于连接相邻两所述显示单元32，以实现相邻两所述显示单元32的信号传输；顶部弹性封装层34，设置于所述显示单元32表面；其中，所述信号走线33对应所述金属布线预留区域的部分呈曲线设置，且夹设于所述底部弹性封装层30与所述顶部弹性封装层34的表面，以实现所述显示面板的球面变形或拉伸变形。\n\n[0078]优选的，所述信号走线33对应所述金属布线预留区域的部分的长度大于相邻两所述像素预留区域之间的距离。\n\n[0079]优选的，所述底部弹性封装层30以及所述顶部弹性封装层34的材料为聚二甲基硅氧烷。\n\n[0080]所述显示面板的具体膜层结构请参照图2A～2I以及上述实施例中的描述，此处不再赘述。\n\n[0081]如图4所示，为本发明实施例提供的显示面板的信号走线布线示意图；所述显示面板包括像素预留区域43，以及对应所述像素预留区域43之外的金属布线预留区域45，薄膜晶体管44以及像素单元对应所述像素预留区域43制备，以形成分立设置的显示单元，所述信号走线连接相邻两所述显示单元，所述信号走线对应所述金属布线预留区域45的部分呈曲线排布，使得所述信号走线对应所述金属布线预留区域45的部分的走线长度大于相邻两所述像素预留区域43之间的直线距离。其中，所述信号走线包括但不限于高电位源线41、扫描线42以及数据线40。\n\n[0082]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10639, 23693, '技术领域\n\n[0001]本揭示涉及一种发光单元，特别是涉及一种具有倒装型发光二极管芯片的发光单元及其制造方法。\n\n背景技术\n\n[0002]发光二极管(Light Emitting Diode，简称LED)是一种主动发光器件，具有体积小、质量轻、亮度高、寿命长和发光色彩多样性的优点。早在西元1955年，美国无线电公司就发现了砷化镓(GaAs)能够发射红光的现象。并且在西元1962年，成功开发出第一种可见光发光二极管。直到西元1993年日本科学家中村修二发明了基于氮化镓(GaN)和铟氮化镓(InGaN)的蓝光LED。目前LED已经取代了传统的白炽灯、钨丝灯和荧光灯，广泛应用在照明、广告牌、交通灯、车载指示灯和背光源等领域。\n\n[0003]为了实现RGB全彩色显示，通常使用白色背光源。白光LED可以由LED(R)、LED(G)、LED(B)此三基色LED组成，其中(R)、(G)、(B)分别是红、绿、蓝三原色。或者是，参照图1，其显示一种现有的白光LED 10的结构示意图。白光LED 10包含驱动基板11、反射层12、多个并列的蓝光LED 13、和黄色荧光膜14。白光LED 10的发光原理是通过在蓝光LED 13的上方覆盖一层黄色荧光膜14，使得蓝光LED 13所发出的光线通过黄色荧光膜14混合后可以发出白色光线。白光LED 10具有结构简单、成本低、色度易调节、可靠性高、可用于异形显示等优势，因而被广泛地应用在各种背光模组中。\n\n[0004]尽管采用白光LED 10制作背光模组的方案具有诸多优势，但是由于蓝光LED 13发出的蓝光在通过黄色荧光膜14会因红光和绿光量子点材料而激发出红光和绿光，这些红、绿光通过其他膜层间时容易发生散射和反射。并且这些红、绿光入射到蓝光LED 13时，蓝光LED 13表面的蓝宝石基板(折射率约为1.76)对光的反射率很低。具体来说，请参照图2，其显示蓝宝石基板在空气中反射率与不同入射角度的曲线图。从图2可以看到从蓝宝石基板表面反射的光只占很少的一部分，大部分的光是被白光LED 10的内部结构(例如多量子阱结构、载流子掺杂层等)以无辐射跃迁的方式吸收，如此会降低背光模组的发光效率。\n\n[0005]有鉴于此，有必要提出一种发光单元及其制造方法，以解决现有技术中存在的问题。\n\n发明内容\n\n[0006]为解决上述现有技术的问题，本揭示的目的在于提供一种发光单元及其制造方法，通过光学设计，在LED的出光面(如蓝宝石衬底的表面)上制备一层光学功能膜，其能将红绿光反射出去，从而提高了背光模组整体的发光效率。\n\n[0007]为达成上述目的，本揭示提供一种发光单元，包含：发光二极管芯片，包含一出光面；以及光学功能膜，设置在所述发光二极管芯片的所述出光面，其中所述光学功能膜在350纳米至480纳米的波长范围的光透过率大于95％。\n\n[0008]本揭示其中之一优选实施例中，所述光学功能膜包含蓝光透过膜。\n\n[0009]本揭示其中之一优选实施例中，所述光学功能膜为多层膜结构，且材质为无机化合物。\n\n[0010]本揭示其中之一优选实施例中，所述多层膜结构选自于由二氧化硅层、硫化锌层、二氧化锆层、五氧化二钽层、五氧化二铌层、二氧化钛层、三氧化二铝层、氧化铟锡层和氟化镁层所组成的群组。\n\n[0011]本揭示其中之一优选实施例中，所述发光二极管芯片为倒装型发光二极管芯片。\n\n[0012]本揭示其中之一优选实施例中，所述发光二极管芯片包含：衬底，包含所述出光面和相对所述出光面的入光面；N型氮化镓层，设置在所述衬底的所述入光面；多量子阱层，设置在所述N型氮化镓层上；P型氮化镓层，设置在所述多量子阱层上，且所述多量子阱层位在所述N型氮化镓层与所述P型氮化镓层之间；负电极，设置在所述N型氮化镓层上；以及正电极，设置在所述P型氮化镓层上。\n\n[0013]本揭示其中之一优选实施例中，所述发光二极管芯片还包含：金属层，设置在所述P型氮化镓层与正电极之间；以及隔离层，设置在所述金属层、所述负电极、所述正电极之上，用于使所述负电极与所述正电极彼此电性隔离。\n\n[0014]本揭示其中之一优选实施例中，所述衬底的材质包含蓝宝石。\n\n[0015]本揭示其中之一优选实施例中，所述光学功能膜的厚度小于25微米。\n\n[0016]本揭示还提供一种发光单元的制造方法，包含：提供衬底，并且在所述衬底定义包含有出光面和入光面；在所述衬底的所述出光面形成光学功能膜，其中所述光学功能膜在350纳米至480纳米的波长范围的光透过率大于95％；以及在所述衬底的所述入光面依序形成N型氮化镓层、多量子阱层、P型氮化镓层、负电极、和正电极以形成发光二极管芯片。\n\n[0017]本揭示其中之一优选实施例中，形成所述发光二极管芯片的步骤包含：在所述衬底的所述入光面设置所述N型氮化镓层；在所述N型氮化镓层上设置所述多量子阱层；在所述多量子阱层上设置所述P型氮化镓层，且所述多量子阱层位在所述N型氮化镓层与所述P型氮化镓层之间；在所述N型氮化镓层上设置所述负电极；以及在所述P型氮化镓层上设置所述正电极。\n\n[0018]本揭示其中之一优选实施例中，形成所述发光二极管芯片的步骤还包含：在所述P型氮化镓层与正电极之间设置金属层；以及在所述金属层、所述负电极、所述正电极之上设置隔离层，其中所述隔离层用于使所述负电极与所述正电极彼此电性隔离。\n\n[0019]相较于先前技术，本揭示通过在不改变常规LED制备工艺的前提下，在LED的出光面上制备一层光学功能膜。使用时，LED发出的蓝光透过光学功能膜进入黄色荧光膜后激发出红绿光，光学功能膜能将这些红绿光反射出去，从而降低了LED对红绿光的再吸收，提高了背光模组整体的发光效率。此外，光学功能膜也能够对LED的出光面起到保护作用。背光模组的发光效率的提升也意味着产品续航能力的提高，有利于提升产品在市场的竞争力。\n\n附图说明\n\n[0020]图1显示一种现有的白光LED的结构示意图；\n\n[0021]图2显示显示蓝宝石基板在空气中反射率对应入射角度的曲线图；\n\n[0022]图3显示一种根据本揭示优选实施例的发光单元的结构示意图；\n\n[0023]图4显示一种根据本揭示优选实施例的发光单元的制造方法流程图；以及\n\n[0024]图5显示图3的光学功能膜的透过率对应波长的曲线图。\n\n具体实施方式\n\n[0025]为了让本揭示的上述及其他目的、特征、优点能更明显易懂，下文将特举本揭示优选实施例，并配合所附图式，作详细说明如下。\n\n[0026]请参照图3，其显示一种根据本揭示优选实施例的发光单元20的结构示意图。发光单元20包含发光二极管芯片21和光学功能膜22。发光单元20为一种能发出蓝光的光源，并且通过在发光单元20的上方覆盖一层黄色荧光膜，可使得发光单元20所发出的光线通过黄色荧光膜混合后发出白色光线。在本揭示中，通过光学设计，在不改变常规发光二极管芯片21的制备工艺的前提下，在发光二极管芯片21的出光面S1上制备一层光学功能膜22，具体的结构与制造方法将详述于后。当发光单元20设置在背光模组时，发光二极管芯片21发出的蓝光透过光学功能膜22进入黄色荧光膜后，会被红光和绿光量子点材料激发出红光和绿光，光学功能膜22能将这些红、绿光反射出去，从而降低了发光二极管芯片21对红、绿光的再吸收，提高了背光模组整体的发光效率。此外，光学功能膜22也能够对发光二极管芯片21的出光面S1起到保护作用。\n\n[0027]参照图3和图4，图4显示根据本揭示优选实施例的发光单元20的制造方法流程图。在本揭示的发光单元20的制造方法中，首先，进行步骤S100，提供衬底210，并且在衬底210定义包含有出光面S1和入光面S2。优选地，衬底210材质包含蓝宝石。\n\n[0028]如图3和图4所示，接着，进行步骤S200，在衬底210的出光面S1设置光学功能膜22。光学功能膜22是采用多层膜结构(包含第一膜层L1、第二膜层L2、第三膜层L3…等)，且材质优选为无机化合物。在制造时，光学功能膜22可通过真空蒸镀或者磁控溅射等方式分层堆叠而形成，每层的厚度根据光学模拟结果并且通过控制镀膜参数来精准地控制。优选地，光学功能膜22的总厚度小于25微米，如此可避免影响发光单元20的光学性能，并且在提高发光单元20的白光发光效能的同时，还可以对发光二极管芯片210的出光面能起到保护作用。可选地，光学功能膜22的多层膜结构选自于由二氧化硅(SiO2)层、硫化锌(ZnS)层、二氧化锆(ZrO2)层、五氧化二钽(Ta2O5)层、五氧化二铌(Nb2O5)层、二氧化钛(TiO2)层、三氧化二铝(Al2O3)层、氧化铟锡(ITO)层和氟化镁(MgF2)层所组成的群组。\n\n[0029]请参照图5，其显示图3的光学功能膜22的透过率对应波长的曲线图。当图3的光学功能膜22采用蓝光透过膜(Blue Light Transmission Film，简称BLTF)来实施时，光学功能膜22在350纳米至480纳米的波长范围的光透过率大于95％(如图5所示)。又，如图5所示，除个别波段外，波长较长的红、绿光的反射率大于95％。在保证光学功能膜22具有蓝光高透过的基础上，避免了图3的发光单元20的发光二极管芯片210对红、绿光的吸收效应。也就是说，光学功能膜22能反射红、绿光，从而降低了发光单元20对红、绿光的再吸收。因此当发光单元20设置在背光模组时，可提高背光模组整体的发光效率。\n\n[0030]如图3和图4所示，接着，进行步骤S300，通过有机金属化学气相沉积法(Metal-Organic Chemical Vapor Deposition，简称MOCVD)、电子束蒸镀、离子束刻蚀、电子束刻蚀等技术，在衬底210的入光面S2依序设置N型氮化镓层220、多量子阱层(Multiple QuantumWell Structure)230、P型氮化镓层240、金属层250、负电极260、正电极270、和隔离层280以形成发光二极管芯片210。具体来说，首先，在衬底210的入光面S2设置N型氮化镓层220。接着，在N型氮化镓层220上设置多量子阱层230。接着，在多量子阱层230上设置P型氮化镓层240，其中多量子阱层230位在N型氮化镓层220与P型氮化镓层240之间。接着，在P型氮化镓层240上设置金属层250。接着，在N型氮化镓层220上设置负电极260。接着，在金属层250上设置正电极270，如此金属层250会位在P型氮化镓层240与正电极270，使P型氮化镓层240与正电极270电性接触。接着，在金属层250、负电极260、正电极270之上设置隔离层280，其中隔离层280用于使负电极260与正电极270彼此电性隔离。在本实施例中，发光二极管芯片210为倒装型发光二极管芯片，惟不局限于此。由上可知，光学功能膜22的存在并不会改变发光二极管芯片210原有的制成工艺。通过上述步骤制备发光单元20完成后，工厂内部对制作出的发光单元20进行分档(BIN)测量。利用一定规格的电压和电流对发光单元20进行驱动，检测发光单元20的发光功率和发光波长，并且将相同规格(如某一发光功率下，发光功率波动范围小于3％，以及在某一波长下，波长波动范围小于1纳米)的发光单元20通过裂片的方式进行分离，并放置在同一张蓝膜上，包装后置于仓库。\n\n[0031]综上所述，本揭示通过在不改变常规LED制备工艺的前提下，在LED的出光面上制备一层光学功能膜。使用时，LED发出的蓝光透过光学功能膜进入黄色荧光膜后激发出红绿光，光学功能膜能将这些红绿光反射出去，从而降低了LED对红绿光的再吸收，提高了背光模组整体的发光效率。此外，光学功能膜也能够对LED的出光面起到保护作用。背光模组的发光效率的提升也意味着产品续航能力的提高，有利于提升产品在市场的竞争力。\n\n[0032]以上仅是本揭示的优选实施方式，应当指出，对于所属领域技术人员，在不脱离本揭示原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本揭示的保护范围。', '技术领域\n\n[0001]本揭示涉及一种发光单元，特别是涉及一种具有倒装型发光二极管芯片的发光单元及其制造方法。\n\n背景技术\n\n[0002]发光二极管(Light Emitting Diode，简称LED)是一种主动发光器件，具有体积小、质量轻、亮度高、寿命长和发光色彩多样性的优点。早在西元1955年，美国无线电公司就发现了砷化镓(GaAs)能够发射红光的现象。并且在西元1962年，成功开发出第一种可见光发光二极管。直到西元1993年日本科学家中村修二发明了基于氮化镓(GaN)和铟氮化镓(InGaN)的蓝光LED。目前LED已经取代了传统的白炽灯、钨丝灯和荧光灯，广泛应用在照明、广告牌、交通灯、车载指示灯和背光源等领域。\n\n[0003]为了实现RGB全彩色显示，通常使用白色背光源。白光LED可以由LED(R)、LED(G)、LED(B)此三基色LED组成，其中(R)、(G)、(B)分别是红、绿、蓝三原色。或者是，参照图1，其显示一种现有的白光LED 10的结构示意图。白光LED 10包含驱动基板11、反射层12、多个并列的蓝光LED 13、和黄色荧光膜14。白光LED 10的发光原理是通过在蓝光LED 13的上方覆盖一层黄色荧光膜14，使得蓝光LED 13所发出的光线通过黄色荧光膜14混合后可以发出白色光线。白光LED 10具有结构简单、成本低、色度易调节、可靠性高、可用于异形显示等优势，因而被广泛地应用在各种背光模组中。\n\n[0004]尽管采用白光LED 10制作背光模组的方案具有诸多优势，但是由于蓝光LED 13发出的蓝光在通过黄色荧光膜14会因红光和绿光量子点材料而激发出红光和绿光，这些红、绿光通过其他膜层间时容易发生散射和反射。并且这些红、绿光入射到蓝光LED 13时，蓝光LED 13表面的蓝宝石基板(折射率约为1.76)对光的反射率很低。具体来说，请参照图2，其显示蓝宝石基板在空气中反射率与不同入射角度的曲线图。从图2可以看到从蓝宝石基板表面反射的光只占很少的一部分，大部分的光是被白光LED 10的内部结构(例如多量子阱结构、载流子掺杂层等)以无辐射跃迁的方式吸收，如此会降低背光模组的发光效率。\n\n[0005]有鉴于此，有必要提出一种发光单元及其制造方法，以解决现有技术中存在的问题。\n\n发明内容\n\n[0006]为解决上述现有技术的问题，本揭示的目的在于提供一种发光单元及其制造方法，通过光学设计，在LED的出光面(如蓝宝石衬底的表面)上制备一层光学功能膜，其能将红绿光反射出去，从而提高了背光模组整体的发光效率。\n\n[0007]为达成上述目的，本揭示提供一种发光单元，包含：发光二极管芯片，包含一出光面；以及光学功能膜，设置在所述发光二极管芯片的所述出光面，其中所述光学功能膜在350纳米至480纳米的波长范围的光透过率大于95％。\n\n[0008]本揭示其中之一优选实施例中，所述光学功能膜包含蓝光透过膜。\n\n[0009]本揭示其中之一优选实施例中，所述光学功能膜为多层膜结构，且材质为无机化合物。\n\n[0010]本揭示其中之一优选实施例中，所述多层膜结构选自于由二氧化硅层、硫化锌层、二氧化锆层、五氧化二钽层、五氧化二铌层、二氧化钛层、三氧化二铝层、氧化铟锡层和氟化镁层所组成的群组。\n\n[0011]本揭示其中之一优选实施例中，所述发光二极管芯片为倒装型发光二极管芯片。\n\n[0012]本揭示其中之一优选实施例中，所述发光二极管芯片包含：衬底，包含所述出光面和相对所述出光面的入光面；N型氮化镓层，设置在所述衬底的所述入光面；多量子阱层，设置在所述N型氮化镓层上；P型氮化镓层，设置在所述多量子阱层上，且所述多量子阱层位在所述N型氮化镓层与所述P型氮化镓层之间；负电极，设置在所述N型氮化镓层上；以及正电极，设置在所述P型氮化镓层上。\n\n[0013]本揭示其中之一优选实施例中，所述发光二极管芯片还包含：金属层，设置在所述P型氮化镓层与正电极之间；以及隔离层，设置在所述金属层、所述负电极、所述正电极之上，用于使所述负电极与所述正电极彼此电性隔离。\n\n[0014]本揭示其中之一优选实施例中，所述衬底的材质包含蓝宝石。\n\n[0015]本揭示其中之一优选实施例中，所述光学功能膜的厚度小于25微米。\n\n[0016]本揭示还提供一种发光单元的制造方法，包含：提供衬底，并且在所述衬底定义包含有出光面和入光面；在所述衬底的所述出光面形成光学功能膜，其中所述光学功能膜在350纳米至480纳米的波长范围的光透过率大于95％；以及在所述衬底的所述入光面依序形成N型氮化镓层、多量子阱层、P型氮化镓层、负电极、和正电极以形成发光二极管芯片。\n\n[0017]本揭示其中之一优选实施例中，形成所述发光二极管芯片的步骤包含：在所述衬底的所述入光面设置所述N型氮化镓层；在所述N型氮化镓层上设置所述多量子阱层；在所述多量子阱层上设置所述P型氮化镓层，且所述多量子阱层位在所述N型氮化镓层与所述P型氮化镓层之间；在所述N型氮化镓层上设置所述负电极；以及在所述P型氮化镓层上设置所述正电极。\n\n[0018]本揭示其中之一优选实施例中，形成所述发光二极管芯片的步骤还包含：在所述P型氮化镓层与正电极之间设置金属层；以及在所述金属层、所述负电极、所述正电极之上设置隔离层，其中所述隔离层用于使所述负电极与所述正电极彼此电性隔离。\n\n[0019]相较于先前技术，本揭示通过在不改变常规LED制备工艺的前提下，在LED的出光面上制备一层光学功能膜。使用时，LED发出的蓝光透过光学功能膜进入黄色荧光膜后激发出红绿光，光学功能膜能将这些红绿光反射出去，从而降低了LED对红绿光的再吸收，提高了背光模组整体的发光效率。此外，光学功能膜也能够对LED的出光面起到保护作用。背光模组的发光效率的提升也意味着产品续航能力的提高，有利于提升产品在市场的竞争力。\n\n附图说明\n\n[0020]图1显示一种现有的白光LED的结构示意图；\n\n[0021]图2显示显示蓝宝石基板在空气中反射率对应入射角度的曲线图；\n\n[0022]图3显示一种根据本揭示优选实施例的发光单元的结构示意图；\n\n[0023]图4显示一种根据本揭示优选实施例的发光单元的制造方法流程图；以及\n\n[0024]图5显示图3的光学功能膜的透过率对应波长的曲线图。\n\n具体实施方式\n\n[0025]为了让本揭示的上述及其他目的、特征、优点能更明显易懂，下文将特举本揭示优选实施例，并配合所附图式，作详细说明如下。\n\n[0026]请参照图3，其显示一种根据本揭示优选实施例的发光单元20的结构示意图。发光单元20包含发光二极管芯片21和光学功能膜22。发光单元20为一种能发出蓝光的光源，并且通过在发光单元20的上方覆盖一层黄色荧光膜，可使得发光单元20所发出的光线通过黄色荧光膜混合后发出白色光线。在本揭示中，通过光学设计，在不改变常规发光二极管芯片21的制备工艺的前提下，在发光二极管芯片21的出光面S1上制备一层光学功能膜22，具体的结构与制造方法将详述于后。当发光单元20设置在背光模组时，发光二极管芯片21发出的蓝光透过光学功能膜22进入黄色荧光膜后，会被红光和绿光量子点材料激发出红光和绿光，光学功能膜22能将这些红、绿光反射出去，从而降低了发光二极管芯片21对红、绿光的再吸收，提高了背光模组整体的发光效率。此外，光学功能膜22也能够对发光二极管芯片21的出光面S1起到保护作用。\n\n[0027]参照图3和图4，图4显示根据本揭示优选实施例的发光单元20的制造方法流程图。在本揭示的发光单元20的制造方法中，首先，进行步骤S100，提供衬底210，并且在衬底210定义包含有出光面S1和入光面S2。优选地，衬底210材质包含蓝宝石。\n\n[0028]如图3和图4所示，接着，进行步骤S200，在衬底210的出光面S1设置光学功能膜22。光学功能膜22是采用多层膜结构(包含第一膜层L1、第二膜层L2、第三膜层L3…等)，且材质优选为无机化合物。在制造时，光学功能膜22可通过真空蒸镀或者磁控溅射等方式分层堆叠而形成，每层的厚度根据光学模拟结果并且通过控制镀膜参数来精准地控制。优选地，光学功能膜22的总厚度小于25微米，如此可避免影响发光单元20的光学性能，并且在提高发光单元20的白光发光效能的同时，还可以对发光二极管芯片210的出光面能起到保护作用。可选地，光学功能膜22的多层膜结构选自于由二氧化硅(SiO2)层、硫化锌(ZnS)层、二氧化锆(ZrO2)层、五氧化二钽(Ta2O5)层、五氧化二铌(Nb2O5)层、二氧化钛(TiO2)层、三氧化二铝(Al2O3)层、氧化铟锡(ITO)层和氟化镁(MgF2)层所组成的群组。\n\n[0029]请参照图5，其显示图3的光学功能膜22的透过率对应波长的曲线图。当图3的光学功能膜22采用蓝光透过膜(Blue Light Transmission Film，简称BLTF)来实施时，光学功能膜22在350纳米至480纳米的波长范围的光透过率大于95％(如图5所示)。又，如图5所示，除个别波段外，波长较长的红、绿光的反射率大于95％。在保证光学功能膜22具有蓝光高透过的基础上，避免了图3的发光单元20的发光二极管芯片210对红、绿光的吸收效应。也就是说，光学功能膜22能反射红、绿光，从而降低了发光单元20对红、绿光的再吸收。因此当发光单元20设置在背光模组时，可提高背光模组整体的发光效率。\n\n[0030]如图3和图4所示，接着，进行步骤S300，通过有机金属化学气相沉积法(Metal-Organic Chemical Vapor Deposition，简称MOCVD)、电子束蒸镀、离子束刻蚀、电子束刻蚀等技术，在衬底210的入光面S2依序设置N型氮化镓层220、多量子阱层(Multiple QuantumWell Structure)230、P型氮化镓层240、金属层250、负电极260、正电极270、和隔离层280以形成发光二极管芯片210。具体来说，首先，在衬底210的入光面S2设置N型氮化镓层220。接着，在N型氮化镓层220上设置多量子阱层230。接着，在多量子阱层230上设置P型氮化镓层240，其中多量子阱层230位在N型氮化镓层220与P型氮化镓层240之间。接着，在P型氮化镓层240上设置金属层250。接着，在N型氮化镓层220上设置负电极260。接着，在金属层250上设置正电极270，如此金属层250会位在P型氮化镓层240与正电极270，使P型氮化镓层240与正电极270电性接触。接着，在金属层250、负电极260、正电极270之上设置隔离层280，其中隔离层280用于使负电极260与正电极270彼此电性隔离。在本实施例中，发光二极管芯片210为倒装型发光二极管芯片，惟不局限于此。由上可知，光学功能膜22的存在并不会改变发光二极管芯片210原有的制成工艺。通过上述步骤制备发光单元20完成后，工厂内部对制作出的发光单元20进行分档(BIN)测量。利用一定规格的电压和电流对发光单元20进行驱动，检测发光单元20的发光功率和发光波长，并且将相同规格(如某一发光功率下，发光功率波动范围小于3％，以及在某一波长下，波长波动范围小于1纳米)的发光单元20通过裂片的方式进行分离，并放置在同一张蓝膜上，包装后置于仓库。\n\n[0031]综上所述，本揭示通过在不改变常规LED制备工艺的前提下，在LED的出光面上制备一层光学功能膜。使用时，LED发出的蓝光透过光学功能膜进入黄色荧光膜后激发出红绿光，光学功能膜能将这些红绿光反射出去，从而降低了LED对红绿光的再吸收，提高了背光模组整体的发光效率。此外，光学功能膜也能够对LED的出光面起到保护作用。背光模组的发光效率的提升也意味着产品续航能力的提高，有利于提升产品在市场的竞争力。\n\n[0032]以上仅是本揭示的优选实施方式，应当指出，对于所属领域技术人员，在不脱离本揭示原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本揭示的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10640, 23694, '【技术领域】\n\n[0001]本发明涉及显示领域，特别是涉及一种背光装置及其制造方法。\n\n【背景技术】\n\n[0002]Mini LED(次毫米发光二极管)是一种尺寸介于传统LED与Micro LED之间的发光二极体，是OLED显示技术在未来市场上的强力竞争对手，其具有高亮度、可制作于柔性可弯曲基板上、可应用于高动态对比度显示技术、窄边框显示技术、异形显示技术等诸多优点，成为市场研究热点。然而，Mini LED在出光效率、混光均匀性、成本等方面与常规的背光产品及OLED显示技术相比还有一些差距。例如，以将Mini LED制作于印刷电路板或柔性电路板的直下式背光架构而言，由于折射率的差异导致面光源一部分光线在膜材和基板之间被限制而无法出射，光线在膜材之间的多次折返导致光能的损失和出光效率的下降。对于膜材本身而言，其穿透率也有一定的限制，如何提升发光二极管芯片的出光效率，减少光线在面光源内部的损耗已成为提高面光源光效的首要问题。\n\n[0003]故，有必要提供一种背光装置及其制造方法，以解决现有技术所存在的问题。\n\n【发明内容】\n\n[0004]有鉴于现有技术的缺点，本发明的主要目的在于提供一种背光装置及其制造方法，可以减少内部的回光损失，从整体上提升面光源的出光效率。\n\n[0005]为达成本发明的前述目的，本发明提供一种背光装置，其包括：一基板；一发光二极管层，设于所述基板上，并包括多个间隔设置的发光二极管芯片；以及一带通滤光片，设于所述发光二极管层上，其中所述带通滤光片在对应所述发光二极管芯片的位置上设有开孔。\n\n[0006]在本发明的一实施例中，所述背光装置还包括至少一扩散层，所述至少一扩散层设置于所述带通滤光片上，并通过所述带通滤光片的开孔接收从所述发光二极管层发出的光线，使所述光线分散混匀。\n\n[0007]在本发明的一实施例中，所述发光二极管芯片包括红色、绿色及蓝色发光二极管芯片。\n\n[0008]在本发明的一实施例中，所述基板至少包含一金属线层与一绝缘层。\n\n[0009]在本发明的一实施例中，所述背光装置还包括至少一增亮膜层，所述至少一增亮膜层设置于所述至少一扩散层上。\n\n[0010]在本发明的一实施例中，所述发光二极管芯片是尺寸介于100～200微米的次毫米发光二极管芯片。\n\n[0011]在本发明的一实施例中，所述发光二极管层涂布有一透明填充层，其填充于所述间隔设置的发光二极管芯片之间的缝隙，并与所述发光二极管芯片高度相同。\n\n[0012]在本发明的一实施例中，所述带通滤光片制备在耐高温透明塑料膜片上。\n\n[0013]本发明另提供一种包括如上所述的背光装置的制造方法，其包含下列步骤：提供一基板；设置一发光二极管层于所述基板上，所述发光二极管层并包括多个间隔设置的发光二极管芯片；以及设置一带通滤光片于所述发光二极管层上，其中所述带通滤光片在对应所述发光二极管芯片的位置上设有开孔。\n\n[0014]在本发明的一实施例中，所述背光装置的制造方法進一步包含下列步骤：形成至少一扩散层于所述带通滤光片上；以及形成至少一增亮膜层于所述至少一扩散层上。\n\n[0015]本发明主要是在发光二极管层上方加入带通滤光片，减少Mini LED装置内部的回光损失，从整体上提升面光源的出光效率。\n\n【附图说明】\n\n[0016]图1是本发明一实施例的背光装置的剖面示意图。\n\n[0017]图2A至图2D是图1的背光装置的制造流程示意图。\n\n[0018]图3是本发明一实施例的背光装置的带通滤光片的制造流程示意图。\n\n[0019]图4是本发明一实施例的背光装置的制造方法的流程图。\n\n【具体实施方式】\n\n[0020]为让本发明上述目的、特征及优点更明显易懂，下文特举本发明较佳实施例，并配合附图，作详细说明如下。再者，本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。\n\n[0021]本发明的背光装置主要可作为一般平面显示屏的背光源。请参考图1所示，图1是本发明一实施例的背光装置的剖面示意图。所述背光装置主要包括一基板10、一发光二极管层20以及一带通滤光片30，并可进一步包括至少一扩散层40及至少一增亮膜层50。\n\n[0022]在一实施例中，所述基板10至少包含一金属线层与一绝缘层。例如所述基板10可包括铜线层、聚酰亚胺薄膜层和白油层，其中所述白油层用于将穿透过所述带通滤光片的蓝光二次反射回所述至少一扩散层。\n\n[0023]如图1所示，所述发光二极管层20设于所述基板10上，并包括多个间隔设置的发光二极管芯片(200,201,202)。具体而言，所述发光二极管芯片(200,201,202)可包含尺寸介于100～200微米的红色、绿色及蓝色次毫米发光二极管(Mini LED)芯片，且由于所述发光二极管层20是采用红色、绿色及蓝色次毫米发光二极管芯片分别提供红、绿、蓝光，所述发光二极管层20可不具有萤光粉层或量子点膜层，不需要通过蓝色次毫米发光二极管芯片照射激发萤光粉层或量子点膜层来转换成其他色光，也就避免了荧光粉层或量子点膜层激发过程中的光子损失，从整体上提升面光源的出光效率。\n\n[0024]在一实施例中，所述发光二极管层20还涂布有一透明填充层203，其填充于所述间隔设置的发光二极管芯片(200,201,202)之间的缝隙，并与所述发光二极管芯片(200,201,202)的高度相同，如此可使得所述发光二极管层20的表面平整，有利于后续膜层的设置。\n\n[0025]如图1所示，所述带通滤光片30设于所述发光二极管层20上，所述带通滤光片30优选是制备在耐高温透明塑料膜片上。所述带通滤光片30在对应所述发光二极管芯片(200,201,202)的位置上设有开孔，且所述带通滤光片30的表面允许蓝光穿透，但是会反射红光和绿光。\n\n[0026]如图1所示，所述至少一扩散层40是设置于所述带通滤光片30上，并通过所述带通滤光片30的开孔接收从所述发光二极管层20发出的光线，用以使所述光线分散混匀。由于光线被分散混匀，所述至少一扩散层40会将一部分接收的光线反射回所述带通滤光片30。此时，所述带通滤光片30表面允许被所述至少一扩散层40所反射的光线中的蓝光穿透，并将所述反射的光线中的红光和绿光再次反射回所述至少一扩散层40。\n\n[0027]如图1所示，所述至少一增亮膜层50是设置于所述至少一扩散层40上。且在本实施例中，所述背光装置包括了上、下增亮膜层(50,51)，其作用为将光聚积在一定角度范围内，增加面光源的正面亮度。\n\n[0028]由于红色、绿色及蓝色发光二极管芯片发出的光不经过带通滤光片30而直接进入扩散层40下表面，部份的红色、绿色及蓝色三色光在扩散层40下表面发生反射，反射后蓝光经过所述带通滤光片30和所述基板10的白油层后经过二次反射重新进入所述扩散层40中，绿光和红光在所述带通滤光片30的表面几乎被全部反射回所述扩散层40，而不会透过所述带通滤光片30进入所述基板10的白油层。通过这样的光路设计，可让更多光线进入扩散层40和增亮膜层50，从整体上提升面光源出光效率。同时，采用三基色的发光二极管芯片，可避免通过蓝色发光二极管芯片部分激发荧光粉或量子点膜层造成的激发光效损失，可以实现更高效的发光。\n\n[0029]请进一步参考图2A至图2D及图4，图2A至图2D是图1的背光装置的制造流程示意图；图4是本发明一实施例的背光装置的制造方法的流程图。所述背光装置的制造方法主要包括下列步骤S100至S102：\n\n[0030]步骤S100：提供一基板10，如图2A所示，其中所述基板10可由至少一金属线层与一绝缘层制备而成，所述金属线层与绝缘层可包括例如铜线层、聚酰亚胺薄膜层和白油层。\n\n[0031]步骤S101：设置一发光二极管层20于所述基板10上，如图2B所示，其中所述发光二极管层20包括多个间隔设置的发光二极管芯片(200,201,202)。具体而言，所述发光二极管芯片(200,201,202)可包含尺寸介于100～200微米的红色、绿色及蓝色次毫米发光二极管(Mini LED)芯片，本步骤还可再包含一涂布工艺来形成一透明填充层203，使透明填充层203的材料填充于所述间隔设置的发光二极管芯片(200,201,202)之间的缝隙，如图2C所示。\n\n[0032]步骤S102：设置一表面允许蓝光穿透，但反射红光和绿光的带通滤光片30于所述发光二极管层20上，如图2D所示，其中进一步参考图3所示，本步骤会先将所述带通滤光片30制备在耐高温透明塑料膜片上，随后在对应所述发光二极管芯片(200,201,202)的位置上设有开孔300，最后再将所述带通滤光片30通过热压方式设于所述发光二极管层20上。\n\n[0033]所述背光装置的制造方法还可包括下列步骤S103至S104：\n\n[0034]步骤S103：形成至少一扩散层40于所述带通滤光片30上，其中所述扩散层40是含有散射颗粒的树脂层或胶黏剂，用以通过所述带通滤光片30的开孔接收从所述发光二极管层20发出的光线，用以使所述光线分散混匀。\n\n[0035]步骤S104：形成至少一增亮膜层50于所述至少一扩散层40上。\n\n[0036]综上所述，相较于现有技术，本发明主要是在发光二极管层上方加入允许蓝光穿透、反射红绿光的带通滤光片，减少Mini LED装置内部的回光损失，从整体上提升面光源的出光效率。且本发明通过采用红色、绿色及蓝色发光二极管芯片制备Mini LED装置，避免采用蓝光发光二极管芯片激发荧光粉或量子点膜发出其他色光的方法，以避免采用此方法会引起的光子激发损失，提升Mini LED装置的出光效率。\n\n[0037]本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。', '【技术领域】\n\n[0001]本发明涉及显示领域，特别是涉及一种背光装置及其制造方法。\n\n【背景技术】\n\n[0002]Mini LED(次毫米发光二极管)是一种尺寸介于传统LED与Micro LED之间的发光二极体，是OLED显示技术在未来市场上的强力竞争对手，其具有高亮度、可制作于柔性可弯曲基板上、可应用于高动态对比度显示技术、窄边框显示技术、异形显示技术等诸多优点，成为市场研究热点。然而，Mini LED在出光效率、混光均匀性、成本等方面与常规的背光产品及OLED显示技术相比还有一些差距。例如，以将Mini LED制作于印刷电路板或柔性电路板的直下式背光架构而言，由于折射率的差异导致面光源一部分光线在膜材和基板之间被限制而无法出射，光线在膜材之间的多次折返导致光能的损失和出光效率的下降。对于膜材本身而言，其穿透率也有一定的限制，如何提升发光二极管芯片的出光效率，减少光线在面光源内部的损耗已成为提高面光源光效的首要问题。\n\n[0003]故，有必要提供一种背光装置及其制造方法，以解决现有技术所存在的问题。\n\n【发明内容】\n\n[0004]有鉴于现有技术的缺点，本发明的主要目的在于提供一种背光装置及其制造方法，可以减少内部的回光损失，从整体上提升面光源的出光效率。\n\n[0005]为达成本发明的前述目的，本发明提供一种背光装置，其包括：一基板；一发光二极管层，设于所述基板上，并包括多个间隔设置的发光二极管芯片；以及一带通滤光片，设于所述发光二极管层上，其中所述带通滤光片在对应所述发光二极管芯片的位置上设有开孔。\n\n[0006]在本发明的一实施例中，所述背光装置还包括至少一扩散层，所述至少一扩散层设置于所述带通滤光片上，并通过所述带通滤光片的开孔接收从所述发光二极管层发出的光线，使所述光线分散混匀。\n\n[0007]在本发明的一实施例中，所述发光二极管芯片包括红色、绿色及蓝色发光二极管芯片。\n\n[0008]在本发明的一实施例中，所述基板至少包含一金属线层与一绝缘层。\n\n[0009]在本发明的一实施例中，所述背光装置还包括至少一增亮膜层，所述至少一增亮膜层设置于所述至少一扩散层上。\n\n[0010]在本发明的一实施例中，所述发光二极管芯片是尺寸介于100～200微米的次毫米发光二极管芯片。\n\n[0011]在本发明的一实施例中，所述发光二极管层涂布有一透明填充层，其填充于所述间隔设置的发光二极管芯片之间的缝隙，并与所述发光二极管芯片高度相同。\n\n[0012]在本发明的一实施例中，所述带通滤光片制备在耐高温透明塑料膜片上。\n\n[0013]本发明另提供一种包括如上所述的背光装置的制造方法，其包含下列步骤：提供一基板；设置一发光二极管层于所述基板上，所述发光二极管层并包括多个间隔设置的发光二极管芯片；以及设置一带通滤光片于所述发光二极管层上，其中所述带通滤光片在对应所述发光二极管芯片的位置上设有开孔。\n\n[0014]在本发明的一实施例中，所述背光装置的制造方法進一步包含下列步骤：形成至少一扩散层于所述带通滤光片上；以及形成至少一增亮膜层于所述至少一扩散层上。\n\n[0015]本发明主要是在发光二极管层上方加入带通滤光片，减少Mini LED装置内部的回光损失，从整体上提升面光源的出光效率。\n\n【附图说明】\n\n[0016]图1是本发明一实施例的背光装置的剖面示意图。\n\n[0017]图2A至图2D是图1的背光装置的制造流程示意图。\n\n[0018]图3是本发明一实施例的背光装置的带通滤光片的制造流程示意图。\n\n[0019]图4是本发明一实施例的背光装置的制造方法的流程图。\n\n【具体实施方式】\n\n[0020]为让本发明上述目的、特征及优点更明显易懂，下文特举本发明较佳实施例，并配合附图，作详细说明如下。再者，本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。\n\n[0021]本发明的背光装置主要可作为一般平面显示屏的背光源。请参考图1所示，图1是本发明一实施例的背光装置的剖面示意图。所述背光装置主要包括一基板10、一发光二极管层20以及一带通滤光片30，并可进一步包括至少一扩散层40及至少一增亮膜层50。\n\n[0022]在一实施例中，所述基板10至少包含一金属线层与一绝缘层。例如所述基板10可包括铜线层、聚酰亚胺薄膜层和白油层，其中所述白油层用于将穿透过所述带通滤光片的蓝光二次反射回所述至少一扩散层。\n\n[0023]如图1所示，所述发光二极管层20设于所述基板10上，并包括多个间隔设置的发光二极管芯片(200,201,202)。具体而言，所述发光二极管芯片(200,201,202)可包含尺寸介于100～200微米的红色、绿色及蓝色次毫米发光二极管(Mini LED)芯片，且由于所述发光二极管层20是采用红色、绿色及蓝色次毫米发光二极管芯片分别提供红、绿、蓝光，所述发光二极管层20可不具有萤光粉层或量子点膜层，不需要通过蓝色次毫米发光二极管芯片照射激发萤光粉层或量子点膜层来转换成其他色光，也就避免了荧光粉层或量子点膜层激发过程中的光子损失，从整体上提升面光源的出光效率。\n\n[0024]在一实施例中，所述发光二极管层20还涂布有一透明填充层203，其填充于所述间隔设置的发光二极管芯片(200,201,202)之间的缝隙，并与所述发光二极管芯片(200,201,202)的高度相同，如此可使得所述发光二极管层20的表面平整，有利于后续膜层的设置。\n\n[0025]如图1所示，所述带通滤光片30设于所述发光二极管层20上，所述带通滤光片30优选是制备在耐高温透明塑料膜片上。所述带通滤光片30在对应所述发光二极管芯片(200,201,202)的位置上设有开孔，且所述带通滤光片30的表面允许蓝光穿透，但是会反射红光和绿光。\n\n[0026]如图1所示，所述至少一扩散层40是设置于所述带通滤光片30上，并通过所述带通滤光片30的开孔接收从所述发光二极管层20发出的光线，用以使所述光线分散混匀。由于光线被分散混匀，所述至少一扩散层40会将一部分接收的光线反射回所述带通滤光片30。此时，所述带通滤光片30表面允许被所述至少一扩散层40所反射的光线中的蓝光穿透，并将所述反射的光线中的红光和绿光再次反射回所述至少一扩散层40。\n\n[0027]如图1所示，所述至少一增亮膜层50是设置于所述至少一扩散层40上。且在本实施例中，所述背光装置包括了上、下增亮膜层(50,51)，其作用为将光聚积在一定角度范围内，增加面光源的正面亮度。\n\n[0028]由于红色、绿色及蓝色发光二极管芯片发出的光不经过带通滤光片30而直接进入扩散层40下表面，部份的红色、绿色及蓝色三色光在扩散层40下表面发生反射，反射后蓝光经过所述带通滤光片30和所述基板10的白油层后经过二次反射重新进入所述扩散层40中，绿光和红光在所述带通滤光片30的表面几乎被全部反射回所述扩散层40，而不会透过所述带通滤光片30进入所述基板10的白油层。通过这样的光路设计，可让更多光线进入扩散层40和增亮膜层50，从整体上提升面光源出光效率。同时，采用三基色的发光二极管芯片，可避免通过蓝色发光二极管芯片部分激发荧光粉或量子点膜层造成的激发光效损失，可以实现更高效的发光。\n\n[0029]请进一步参考图2A至图2D及图4，图2A至图2D是图1的背光装置的制造流程示意图；图4是本发明一实施例的背光装置的制造方法的流程图。所述背光装置的制造方法主要包括下列步骤S100至S102：\n\n[0030]步骤S100：提供一基板10，如图2A所示，其中所述基板10可由至少一金属线层与一绝缘层制备而成，所述金属线层与绝缘层可包括例如铜线层、聚酰亚胺薄膜层和白油层。\n\n[0031]步骤S101：设置一发光二极管层20于所述基板10上，如图2B所示，其中所述发光二极管层20包括多个间隔设置的发光二极管芯片(200,201,202)。具体而言，所述发光二极管芯片(200,201,202)可包含尺寸介于100～200微米的红色、绿色及蓝色次毫米发光二极管(Mini LED)芯片，本步骤还可再包含一涂布工艺来形成一透明填充层203，使透明填充层203的材料填充于所述间隔设置的发光二极管芯片(200,201,202)之间的缝隙，如图2C所示。\n\n[0032]步骤S102：设置一表面允许蓝光穿透，但反射红光和绿光的带通滤光片30于所述发光二极管层20上，如图2D所示，其中进一步参考图3所示，本步骤会先将所述带通滤光片30制备在耐高温透明塑料膜片上，随后在对应所述发光二极管芯片(200,201,202)的位置上设有开孔300，最后再将所述带通滤光片30通过热压方式设于所述发光二极管层20上。\n\n[0033]所述背光装置的制造方法还可包括下列步骤S103至S104：\n\n[0034]步骤S103：形成至少一扩散层40于所述带通滤光片30上，其中所述扩散层40是含有散射颗粒的树脂层或胶黏剂，用以通过所述带通滤光片30的开孔接收从所述发光二极管层20发出的光线，用以使所述光线分散混匀。\n\n[0035]步骤S104：形成至少一增亮膜层50于所述至少一扩散层40上。\n\n[0036]综上所述，相较于现有技术，本发明主要是在发光二极管层上方加入允许蓝光穿透、反射红绿光的带通滤光片，减少Mini LED装置内部的回光损失，从整体上提升面光源的出光效率。且本发明通过采用红色、绿色及蓝色发光二极管芯片制备Mini LED装置，避免采用蓝光发光二极管芯片激发荧光粉或量子点膜发出其他色光的方法，以避免采用此方法会引起的光子激发损失，提升Mini LED装置的出光效率。\n\n[0037]本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。');
INSERT INTO `os_patent_instruction_text` VALUES (10641, 23695, '技术领域\n\n[0001]本申请涉及显示领域，特别涉及一种显示面板及其制作方法。\n\n背景技术\n\n[0002]微发光二极管(Micro LED)技术是指在衬底上以高密度集成的微小尺寸的LED阵列。作为新兴显示技术，微发光二极管显示相较于LCD、OLED显示有较多优势，如较低的功耗，较高的色域，较快的相应速率等，但其技术难度大于LCD或OLED。\n\n[0003]在制造微发光二极管的过程中，首先在施主晶圆上形成微发光二极管，接着将微发光二极管转移到接受衬底上，接受衬底例如是显示屏；而由于需要把巨量的微发光二极管从母版转移到目标显示基板，因此，此项精确转移被认为是目前微发光二极管主要的制作瓶颈之一，导致使用这种方法转移微发光二极管的效率和良率均有较大的问题，大大降低微发光二极管显示面板的良率。\n\n[0004]本申请基于此技术问题，提出了下列技术方案。\n\n发明内容\n\n[0005]本申请提供一种显示面板及其制作方法，以解决现有制作微发光二极管显示面板良率较低的技术问题。\n\n[0006]为实现上述目的，本申请提供的技术方案如下：\n\n[0007]本申请提出了一种显示面板的制作方法，其包括：\n\n[0008]提供一阵列基板；\n\n[0009]在所述阵列基板上形成第一电极层及像素定义层，\n\n[0010]所述像素定义层包括至少一第一开口；\n\n[0011]在所述第一开口内设置微发光二极管单元；\n\n[0012]在所述微发光二极管单元上形成第二电极层；\n\n[0013]在所述第二电极层上形成薄膜封装层。\n\n[0014]在本申请的制作方法中，在所述第一开口内设置微发光二极管单元的步骤包括：\n\n[0015]在所述第一开口内填充第一溶液；\n\n[0016]在所述第一溶液上设置所述微发光二极管单元，使所述微发光二极管单元悬浮在所述第一溶液上；\n\n[0017]利用预定工艺去除所述第一溶液，使所述微发光二极管单元与所述第一电极连接。\n\n[0018]在本申请的制作方法中，在所述第一溶液上设置所述微发光二极管单元，使所述微发光二极管单元悬浮在所述第一溶液上的步骤，包括：\n\n[0019]在母板上制作所述微发光二极管单元；\n\n[0020]将所述微发光二极管单元均匀地分散在第二溶液中；\n\n[0021]利用喷墨打印机中的特定喷头，将所述第二溶液滴入所述第一开口内，使所述微发光二极管单元悬浮在所述第一溶液上。\n\n[0022]在本申请的制作方法中，所述微发光二极管单元包括二极管单元、第一介质及第二介质；\n\n[0023]所述第一介质设置于所述二极管单元的表面；\n\n[0024]所述第二介质设置于靠近所述阵列基板一侧的所述第一介质的表面；\n\n[0025]其中，所述第一介质与所述第一溶液互相排斥，所述第二介质与所述第一溶液互相吸引。\n\n[0026]在本申请的制作方法中，所述二极管单元包括第一电极、设置于所述第一电极上的发光单元、及设置于所述发光单元上的第二电极；\n\n[0027]所述第二介质靠近所述第一电极设置。\n\n[0028]在本申请的制作方法中，所述二极管单元还包括第二开口和第三开口，所述第二开口使部分所述第一电极裸露，所述第三开口使部分所述第二电极裸露；\n\n[0029]其中，所述第一电极层通过所述第二开口与所述第一电极电连接，所述第二电极层通过所述第三开口与所述第二电极电连接。\n\n[0030]在本申请的制作方法中，在所述第一开口内填充第一溶液之前，还包括步骤：\n\n[0031]在所述第一电极层上形成第一金属层；\n\n[0032]所述第一金属层包括铟、锡、镓、铅、铟锡合金、铟镓合金中的至少一种。\n\n[0033]在本申请的制作方法中，利用预定工艺去除所述第一溶液，使所述微发光二极管单元与所述第一电极连接的步骤包括：\n\n[0034]利用第一烘烤工艺，去除所述第一开口内的第一溶液，使所述微发光二极管单元与所述第一金属层接触；\n\n[0035]利用第二烘烤工艺，去除所述第二介质及使所述第一金属层呈熔融状态，使所述第一金属层通过所述第二开口与所述第一电极连接。\n\n[0036]在本申请的制作方法中，在所述微发光二极管单元上形成第二电极层之前，还包括步骤：\n\n[0037]在所述第一开口内形成平坦层，\n\n[0038]所述平坦层的厚度不大于所述微发光二极管单元的厚度；\n\n[0039]利用灰化工艺去除所述微发光二极管单元上所述平坦层。\n\n[0040]本申请还提出了一种显示面板，其中，所述显示面板采用上述的制作方法制成。\n\n[0041]有益效果：本申请利用喷墨打印机中的特定喷头，将混合有微发光二极管单元的溶液滴入阵列基板上，完成所述微发光二极管单元从母板到阵列基板的转移，降低了所述微发光二极管的转移难度，提高了微发光二极管显示面板的良率。\n\n附图说明\n\n[0042]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0043]图1为本申请显示面板制作方法的步骤图；\n\n[0044]图2A～2J为本申请显示面板制作方法的工艺流程图；\n\n[0045]图3为本申请显示面板制作方法的另一步骤图；\n\n[0046]图4为本申请显示面板中微发光二极管单元的结构图。\n\n具体实施方式\n\n[0047]以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。\n\n[0048]图1所示为本申请一种显示面板的制作方法，其包括步骤：\n\n[0049]S10、提供一阵列基板；\n\n[0050]如图2A所示，在本步骤中，所述阵列基板包括基板10及位于所述基板10上的薄膜晶体管层20；\n\n[0051]所述基板10的原材料可以为玻璃基板、石英基板、树脂基板等中的一种；进一步的，所述基板10可以为但限定于柔性基板，可选地可以为有机聚合物，作为示例，有机聚合物可以是聚酰亚胺(PI)、聚酰胺(PA)、聚碳酸酯(PC)、聚苯醚砜(PES)、聚对苯二甲酸乙二醇酯(PET)、聚萘二甲酸乙二醇酯(PEN)、聚甲基丙烯酸甲酯(PMMA)、环烯烃共聚物(COC)中的一种；\n\n[0052]所述薄膜晶体管层20包括ESL(蚀刻阻挡层型)、BCE(背沟道蚀刻型)或Top-gate(顶栅薄膜晶体管型)结构，具体没有限制；例如，如图2A所示，顶栅薄膜晶体管型包括：缓冲层、有源层、栅绝缘层、栅极层、间绝缘层、源漏极层以及平坦层。\n\n[0053]S20、在所述阵列基板上形成第一电极层及像素定义层；\n\n[0054]在本步骤中，首先在所述平坦层上形成过孔，使部分所述源漏极层裸露；其次，在所述平坦层上沉积一金属层，经光阻层涂覆，采用掩模板(未画出)曝光，经显影以及蚀刻的构图工艺处理后，形成如图2B所示的第一电极层30；\n\n[0055]可以理解的，当所述显示面板为底发射型发光器件时，所述第一电极层30为透明的金属层；选为铟锡氧化物(ITO)、氧化铟锌(IZO)、氧化锌(ZnO)、氧化铟(In2O3)、铟镓氧化物(IGO)或氧化锌铝(AZO)中的至少一种；\n\n[0056]最后，在所述第一电极层30涂覆一层所述像素定义层40，所述像素定义层40包括至少一第一开口401；可以理解的，每一所述第一开口401内用于设置微发光二极管单元，即通过所述像素定义层40将不同颜色的所述微发光二极管单元隔开，防止颜色的串扰。\n\n[0057]S30、在所述第一开口内设置微发光二极管单元；\n\n[0058]本步骤主要为将所述微发光二极管单元从母板上转移到目标基板中，即转移到图2B所示的图案中，如图3所示，包括步骤：\n\n[0059]S301、在所述第一电极层上形成第一金属层；\n\n[0060]如图2C所示，本步骤首先在所述第一电极层30上形成第一金属层50，所述第一金属层50位于所述第一开口401内，将所述第一电极层30覆盖；优选的，所述第一金属层50包括铟、锡、镓、铅、铟锡合金、铟镓合金中的至少一种。\n\n[0061]S302、在所述第一开口内填充第一溶液；\n\n[0062]如图2D所示，本步骤主要在所述第一开口401内填充第一溶液402，但所述第一溶液402的厚度不高于所述像素定义层40的厚度。\n\n[0063]S303、在所述第一溶液上设置所述微发光二极管单元，使所述微发光二极管单元悬浮在所述第一溶液上；\n\n[0064]在本步骤中，具体包括：\n\n[0065]S3031、在母板上制作所述微发光二极管单元；\n\n[0066]S3032、将所述微发光二极管单元均匀地分散在第二溶液中；\n\n[0067]S3033、利用喷墨打印机中的特定喷头，将所述第二溶液滴入所述第一开口内，使所述微发光二极管单元悬浮在第一溶液上；\n\n[0068]可以理解的，所述第二溶液优选为墨水；将混有所述微发光二极管单元的墨水填充在所述喷墨打印机中，使用特定的喷头将墨水滴入所述第一开口401中，并确保滴入所述第一开口401中的墨水中包括一个所述微发光二极管单元；\n\n[0069]图4所示为本申请微发光二极管单元的结构图，所述微发光二极管单元60包括二极管单元、第一介质601及第二介质602；\n\n[0070]进一步的，所述第一介质601设置于所述二极管单元的表面，所述第二介质602设置于靠近所述阵列基板一侧的所述第一介质601的表面；其中，所述第一介质601与所述第一溶液402互相排斥，所述第二介质602与所述第一溶液402互相吸引；\n\n[0071]进一步的，所述二极管单元包括第一电极603、设置于所述第一电极603上的发光单元604、及设置于所述发光单元上的第二电极605；即当所述第一电极603与所述第二电极605分别施加正负电荷时，形成完整的回路使得是发光单元604发光；\n\n[0072]如图4所示，所述第二介质602靠近所述第一电极603设置，即设置于所述微发光二极管单元60的底端，使得所述二极管单元与所述第一电极层30形成一定的间距；\n\n[0073]进一步的，所述二极管单元还包括第二开口606和第三开口607，所述第二开口606使部分所述第一电极603裸露，所述第三开口607使部分所述第二电极605裸露；其中，所述第二开口606用于所述第一电极层30与所述第一电极603连接，所述第三开口607用于所述第二电极层与所述第二电极605连接；\n\n[0074]可以理解的，在母板上进行所述微发光二极管单元60的制作时，需要在二极管单元表面设置所述第一介质601和所述第二介质602；此处所述第一介质601和所述第二介质602没有具体的限制，保证所述第一介质601与所述第一溶液402互相排斥、及所述第二介质602与所述第一溶液402互相吸引即可，即图2E所示；\n\n[0075]可以理解的，当所述微发光二极管单元60进入所述第一开口401时，由于所述第一介质601与所述第一溶液402互相排斥使得所述微发光二极管单元60不溶于所述第一溶液402中，而所述第二介质602与所述第一溶液402互相吸引使得所述微发光二极管单元60定位于所述第一开口401的某一位置；因此利用所述第一介质601、所述第二介质602与所述第一溶液402之间的特性，所述微发光二极管单元60在所述第一开口401内进行自动对位。\n\n[0076]S304、利用预定工艺去除所述第一溶液，使所述微发光二极管单元与所述第一电极连接；\n\n[0077]本步骤中，具体包括：\n\n[0078]S3041、利用第一烘烤工艺，去除所述第一开口内的第一溶液，使所述微发光二极管单元与所述第一金属层接触；\n\n[0079]如图2F所示，本步骤主要为采取第一烘烤工艺，即初步加热，去除所述第一开口401内的第一溶液402，使所述微发光二极管单元60与所述第一金属层50接触；\n\n[0080]S3042、利用第二烘烤工艺，去除所述第二介质及使所述第一金属层呈熔融状态，使所述第一金属层通过所述第二开口与所述第一电极连接；\n\n[0081]如图2G所示，本步骤主要为采取第二烘烤工艺，即持续加热，去除所述第二介质602及使所述第一金属层50呈熔融状态，使所述第一金属层50通过所述第二开口606与所述第一电极603连接；可以理解的，所述第二烘烤工艺的加热温度高于所述第一烘烤工艺的加热温度。\n\n[0082]S305、在所述第一开口内形成平坦层；\n\n[0083]如图2H所示，在所述第一开口401内沉积一层平坦层70，本步骤中的平坦层70与薄膜晶体管层20中的平坦层材料相同；覆盖所述第一电极层30，其中所述平坦层70的厚度不大于所述微发光二极管单元60的厚度；其中，所述平坦层70包括绝缘材料；\n\n[0084]进一步的，由于形成所述平坦层70时，所述微发光二极管单元60上可能被所述平坦层70覆盖，影响所述微发光二极管单元60与第二电极层的连接；因此，利用灰化工艺去除所述微发光二极管单元60上所述平坦层70。\n\n[0085]S40、在所述微发光二极管单元上形成第二电极层；\n\n[0086]在本步骤中，如图2I所示，在所述微发光二极管单元60上形成第二电极层80；当所述显示面板为底发射型发光器件时，所述第二电极层80为非透明材料，使发光层产生的光线经过所述第二电极层80向所述基板10方向投射；\n\n[0087]优选的，所述第二电极层80的的材料可选为银(Ag)、铝(Al)、铬(Cr)、钼(Mo)、钨(W)、钛(Ti)、金(Au)、钯(Pd)中的一种或一种以上的组合物。\n\n[0088]S50、在所述第二电极层上形成薄膜封装层。\n\n[0089]在本步骤中，如图2J所示，在所述第二电极层上形成一薄膜封装层90，所述薄膜封装层90主要起阻水阻氧的作用，防止外部水汽对有机发光层的侵蚀，所述薄膜封装层90主要由至少一有机层与至少一无机层交错层叠而成；通常有机层位于所述薄膜封装层90的中间，无机层位于所述薄膜封装层90的两侧，将有机层包裹在中间。\n\n[0090]本申请还提出了一种显示面板，所述显示面板采用上述显示面板的制作方法制成。\n\n[0091]本申请还提出了一种电子装置，所述电子装置包括所述显示面板，所述电子装置的工作原理、所述电子装置的工作原理与所述显示面板的工作原理相似，所述电子装置的工作原理以及所述电子装置的工作原理具体可以参考所述显示面板的工作原理，这里不做赘述。可以理解的，所述电子装置包括但不限定于手机、平板电脑、计算机显示器、游戏机、电视机、显示屏幕、可穿戴设备及其他具有显示功能的生活电器或家用电器等。\n\n[0092]本申请提出了一种显示面板及其制作方法，所述制作方法包括：提供一阵列基板；在所述阵列基板上形成第一电极层及像素定义层，所述像素定义层包括至少一第一开口；利用喷墨打印机中的特定喷头，将混合有微发光二极管单元的溶液滴入所述第一开口内，使所述微发光二极管单元形成于所述第一开口内；在所述微发光二极管单元上形成第二电极层；在所述第二电极层上形成封装层。本申请利用喷墨打印机中的特定喷头，将混合有微发光二极管单元的溶液滴入阵列基板上，完成所述微发光二极管单元从母板到阵列基板的转移，降低了所述微发光二极管的转移难度，提高了微发光二极管显示面板的良率。\n\n[0093]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本申请涉及显示领域，特别涉及一种显示面板及其制作方法。\n\n背景技术\n\n[0002]微发光二极管(Micro LED)技术是指在衬底上以高密度集成的微小尺寸的LED阵列。作为新兴显示技术，微发光二极管显示相较于LCD、OLED显示有较多优势，如较低的功耗，较高的色域，较快的相应速率等，但其技术难度大于LCD或OLED。\n\n[0003]在制造微发光二极管的过程中，首先在施主晶圆上形成微发光二极管，接着将微发光二极管转移到接受衬底上，接受衬底例如是显示屏；而由于需要把巨量的微发光二极管从母版转移到目标显示基板，因此，此项精确转移被认为是目前微发光二极管主要的制作瓶颈之一，导致使用这种方法转移微发光二极管的效率和良率均有较大的问题，大大降低微发光二极管显示面板的良率。\n\n[0004]本申请基于此技术问题，提出了下列技术方案。\n\n发明内容\n\n[0005]本申请提供一种显示面板及其制作方法，以解决现有制作微发光二极管显示面板良率较低的技术问题。\n\n[0006]为实现上述目的，本申请提供的技术方案如下：\n\n[0007]本申请提出了一种显示面板的制作方法，其包括：\n\n[0008]提供一阵列基板；\n\n[0009]在所述阵列基板上形成第一电极层及像素定义层，\n\n[0010]所述像素定义层包括至少一第一开口；\n\n[0011]在所述第一开口内设置微发光二极管单元；\n\n[0012]在所述微发光二极管单元上形成第二电极层；\n\n[0013]在所述第二电极层上形成薄膜封装层。\n\n[0014]在本申请的制作方法中，在所述第一开口内设置微发光二极管单元的步骤包括：\n\n[0015]在所述第一开口内填充第一溶液；\n\n[0016]在所述第一溶液上设置所述微发光二极管单元，使所述微发光二极管单元悬浮在所述第一溶液上；\n\n[0017]利用预定工艺去除所述第一溶液，使所述微发光二极管单元与所述第一电极连接。\n\n[0018]在本申请的制作方法中，在所述第一溶液上设置所述微发光二极管单元，使所述微发光二极管单元悬浮在所述第一溶液上的步骤，包括：\n\n[0019]在母板上制作所述微发光二极管单元；\n\n[0020]将所述微发光二极管单元均匀地分散在第二溶液中；\n\n[0021]利用喷墨打印机中的特定喷头，将所述第二溶液滴入所述第一开口内，使所述微发光二极管单元悬浮在所述第一溶液上。\n\n[0022]在本申请的制作方法中，所述微发光二极管单元包括二极管单元、第一介质及第二介质；\n\n[0023]所述第一介质设置于所述二极管单元的表面；\n\n[0024]所述第二介质设置于靠近所述阵列基板一侧的所述第一介质的表面；\n\n[0025]其中，所述第一介质与所述第一溶液互相排斥，所述第二介质与所述第一溶液互相吸引。\n\n[0026]在本申请的制作方法中，所述二极管单元包括第一电极、设置于所述第一电极上的发光单元、及设置于所述发光单元上的第二电极；\n\n[0027]所述第二介质靠近所述第一电极设置。\n\n[0028]在本申请的制作方法中，所述二极管单元还包括第二开口和第三开口，所述第二开口使部分所述第一电极裸露，所述第三开口使部分所述第二电极裸露；\n\n[0029]其中，所述第一电极层通过所述第二开口与所述第一电极电连接，所述第二电极层通过所述第三开口与所述第二电极电连接。\n\n[0030]在本申请的制作方法中，在所述第一开口内填充第一溶液之前，还包括步骤：\n\n[0031]在所述第一电极层上形成第一金属层；\n\n[0032]所述第一金属层包括铟、锡、镓、铅、铟锡合金、铟镓合金中的至少一种。\n\n[0033]在本申请的制作方法中，利用预定工艺去除所述第一溶液，使所述微发光二极管单元与所述第一电极连接的步骤包括：\n\n[0034]利用第一烘烤工艺，去除所述第一开口内的第一溶液，使所述微发光二极管单元与所述第一金属层接触；\n\n[0035]利用第二烘烤工艺，去除所述第二介质及使所述第一金属层呈熔融状态，使所述第一金属层通过所述第二开口与所述第一电极连接。\n\n[0036]在本申请的制作方法中，在所述微发光二极管单元上形成第二电极层之前，还包括步骤：\n\n[0037]在所述第一开口内形成平坦层，\n\n[0038]所述平坦层的厚度不大于所述微发光二极管单元的厚度；\n\n[0039]利用灰化工艺去除所述微发光二极管单元上所述平坦层。\n\n[0040]本申请还提出了一种显示面板，其中，所述显示面板采用上述的制作方法制成。\n\n[0041]有益效果：本申请利用喷墨打印机中的特定喷头，将混合有微发光二极管单元的溶液滴入阵列基板上，完成所述微发光二极管单元从母板到阵列基板的转移，降低了所述微发光二极管的转移难度，提高了微发光二极管显示面板的良率。\n\n附图说明\n\n[0042]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0043]图1为本申请显示面板制作方法的步骤图；\n\n[0044]图2A～2J为本申请显示面板制作方法的工艺流程图；\n\n[0045]图3为本申请显示面板制作方法的另一步骤图；\n\n[0046]图4为本申请显示面板中微发光二极管单元的结构图。\n\n具体实施方式\n\n[0047]以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。\n\n[0048]图1所示为本申请一种显示面板的制作方法，其包括步骤：\n\n[0049]S10、提供一阵列基板；\n\n[0050]如图2A所示，在本步骤中，所述阵列基板包括基板10及位于所述基板10上的薄膜晶体管层20；\n\n[0051]所述基板10的原材料可以为玻璃基板、石英基板、树脂基板等中的一种；进一步的，所述基板10可以为但限定于柔性基板，可选地可以为有机聚合物，作为示例，有机聚合物可以是聚酰亚胺(PI)、聚酰胺(PA)、聚碳酸酯(PC)、聚苯醚砜(PES)、聚对苯二甲酸乙二醇酯(PET)、聚萘二甲酸乙二醇酯(PEN)、聚甲基丙烯酸甲酯(PMMA)、环烯烃共聚物(COC)中的一种；\n\n[0052]所述薄膜晶体管层20包括ESL(蚀刻阻挡层型)、BCE(背沟道蚀刻型)或Top-gate(顶栅薄膜晶体管型)结构，具体没有限制；例如，如图2A所示，顶栅薄膜晶体管型包括：缓冲层、有源层、栅绝缘层、栅极层、间绝缘层、源漏极层以及平坦层。\n\n[0053]S20、在所述阵列基板上形成第一电极层及像素定义层；\n\n[0054]在本步骤中，首先在所述平坦层上形成过孔，使部分所述源漏极层裸露；其次，在所述平坦层上沉积一金属层，经光阻层涂覆，采用掩模板(未画出)曝光，经显影以及蚀刻的构图工艺处理后，形成如图2B所示的第一电极层30；\n\n[0055]可以理解的，当所述显示面板为底发射型发光器件时，所述第一电极层30为透明的金属层；选为铟锡氧化物(ITO)、氧化铟锌(IZO)、氧化锌(ZnO)、氧化铟(In2O3)、铟镓氧化物(IGO)或氧化锌铝(AZO)中的至少一种；\n\n[0056]最后，在所述第一电极层30涂覆一层所述像素定义层40，所述像素定义层40包括至少一第一开口401；可以理解的，每一所述第一开口401内用于设置微发光二极管单元，即通过所述像素定义层40将不同颜色的所述微发光二极管单元隔开，防止颜色的串扰。\n\n[0057]S30、在所述第一开口内设置微发光二极管单元；\n\n[0058]本步骤主要为将所述微发光二极管单元从母板上转移到目标基板中，即转移到图2B所示的图案中，如图3所示，包括步骤：\n\n[0059]S301、在所述第一电极层上形成第一金属层；\n\n[0060]如图2C所示，本步骤首先在所述第一电极层30上形成第一金属层50，所述第一金属层50位于所述第一开口401内，将所述第一电极层30覆盖；优选的，所述第一金属层50包括铟、锡、镓、铅、铟锡合金、铟镓合金中的至少一种。\n\n[0061]S302、在所述第一开口内填充第一溶液；\n\n[0062]如图2D所示，本步骤主要在所述第一开口401内填充第一溶液402，但所述第一溶液402的厚度不高于所述像素定义层40的厚度。\n\n[0063]S303、在所述第一溶液上设置所述微发光二极管单元，使所述微发光二极管单元悬浮在所述第一溶液上；\n\n[0064]在本步骤中，具体包括：\n\n[0065]S3031、在母板上制作所述微发光二极管单元；\n\n[0066]S3032、将所述微发光二极管单元均匀地分散在第二溶液中；\n\n[0067]S3033、利用喷墨打印机中的特定喷头，将所述第二溶液滴入所述第一开口内，使所述微发光二极管单元悬浮在第一溶液上；\n\n[0068]可以理解的，所述第二溶液优选为墨水；将混有所述微发光二极管单元的墨水填充在所述喷墨打印机中，使用特定的喷头将墨水滴入所述第一开口401中，并确保滴入所述第一开口401中的墨水中包括一个所述微发光二极管单元；\n\n[0069]图4所示为本申请微发光二极管单元的结构图，所述微发光二极管单元60包括二极管单元、第一介质601及第二介质602；\n\n[0070]进一步的，所述第一介质601设置于所述二极管单元的表面，所述第二介质602设置于靠近所述阵列基板一侧的所述第一介质601的表面；其中，所述第一介质601与所述第一溶液402互相排斥，所述第二介质602与所述第一溶液402互相吸引；\n\n[0071]进一步的，所述二极管单元包括第一电极603、设置于所述第一电极603上的发光单元604、及设置于所述发光单元上的第二电极605；即当所述第一电极603与所述第二电极605分别施加正负电荷时，形成完整的回路使得是发光单元604发光；\n\n[0072]如图4所示，所述第二介质602靠近所述第一电极603设置，即设置于所述微发光二极管单元60的底端，使得所述二极管单元与所述第一电极层30形成一定的间距；\n\n[0073]进一步的，所述二极管单元还包括第二开口606和第三开口607，所述第二开口606使部分所述第一电极603裸露，所述第三开口607使部分所述第二电极605裸露；其中，所述第二开口606用于所述第一电极层30与所述第一电极603连接，所述第三开口607用于所述第二电极层与所述第二电极605连接；\n\n[0074]可以理解的，在母板上进行所述微发光二极管单元60的制作时，需要在二极管单元表面设置所述第一介质601和所述第二介质602；此处所述第一介质601和所述第二介质602没有具体的限制，保证所述第一介质601与所述第一溶液402互相排斥、及所述第二介质602与所述第一溶液402互相吸引即可，即图2E所示；\n\n[0075]可以理解的，当所述微发光二极管单元60进入所述第一开口401时，由于所述第一介质601与所述第一溶液402互相排斥使得所述微发光二极管单元60不溶于所述第一溶液402中，而所述第二介质602与所述第一溶液402互相吸引使得所述微发光二极管单元60定位于所述第一开口401的某一位置；因此利用所述第一介质601、所述第二介质602与所述第一溶液402之间的特性，所述微发光二极管单元60在所述第一开口401内进行自动对位。\n\n[0076]S304、利用预定工艺去除所述第一溶液，使所述微发光二极管单元与所述第一电极连接；\n\n[0077]本步骤中，具体包括：\n\n[0078]S3041、利用第一烘烤工艺，去除所述第一开口内的第一溶液，使所述微发光二极管单元与所述第一金属层接触；\n\n[0079]如图2F所示，本步骤主要为采取第一烘烤工艺，即初步加热，去除所述第一开口401内的第一溶液402，使所述微发光二极管单元60与所述第一金属层50接触；\n\n[0080]S3042、利用第二烘烤工艺，去除所述第二介质及使所述第一金属层呈熔融状态，使所述第一金属层通过所述第二开口与所述第一电极连接；\n\n[0081]如图2G所示，本步骤主要为采取第二烘烤工艺，即持续加热，去除所述第二介质602及使所述第一金属层50呈熔融状态，使所述第一金属层50通过所述第二开口606与所述第一电极603连接；可以理解的，所述第二烘烤工艺的加热温度高于所述第一烘烤工艺的加热温度。\n\n[0082]S305、在所述第一开口内形成平坦层；\n\n[0083]如图2H所示，在所述第一开口401内沉积一层平坦层70，本步骤中的平坦层70与薄膜晶体管层20中的平坦层材料相同；覆盖所述第一电极层30，其中所述平坦层70的厚度不大于所述微发光二极管单元60的厚度；其中，所述平坦层70包括绝缘材料；\n\n[0084]进一步的，由于形成所述平坦层70时，所述微发光二极管单元60上可能被所述平坦层70覆盖，影响所述微发光二极管单元60与第二电极层的连接；因此，利用灰化工艺去除所述微发光二极管单元60上所述平坦层70。\n\n[0085]S40、在所述微发光二极管单元上形成第二电极层；\n\n[0086]在本步骤中，如图2I所示，在所述微发光二极管单元60上形成第二电极层80；当所述显示面板为底发射型发光器件时，所述第二电极层80为非透明材料，使发光层产生的光线经过所述第二电极层80向所述基板10方向投射；\n\n[0087]优选的，所述第二电极层80的的材料可选为银(Ag)、铝(Al)、铬(Cr)、钼(Mo)、钨(W)、钛(Ti)、金(Au)、钯(Pd)中的一种或一种以上的组合物。\n\n[0088]S50、在所述第二电极层上形成薄膜封装层。\n\n[0089]在本步骤中，如图2J所示，在所述第二电极层上形成一薄膜封装层90，所述薄膜封装层90主要起阻水阻氧的作用，防止外部水汽对有机发光层的侵蚀，所述薄膜封装层90主要由至少一有机层与至少一无机层交错层叠而成；通常有机层位于所述薄膜封装层90的中间，无机层位于所述薄膜封装层90的两侧，将有机层包裹在中间。\n\n[0090]本申请还提出了一种显示面板，所述显示面板采用上述显示面板的制作方法制成。\n\n[0091]本申请还提出了一种电子装置，所述电子装置包括所述显示面板，所述电子装置的工作原理、所述电子装置的工作原理与所述显示面板的工作原理相似，所述电子装置的工作原理以及所述电子装置的工作原理具体可以参考所述显示面板的工作原理，这里不做赘述。可以理解的，所述电子装置包括但不限定于手机、平板电脑、计算机显示器、游戏机、电视机、显示屏幕、可穿戴设备及其他具有显示功能的生活电器或家用电器等。\n\n[0092]本申请提出了一种显示面板及其制作方法，所述制作方法包括：提供一阵列基板；在所述阵列基板上形成第一电极层及像素定义层，所述像素定义层包括至少一第一开口；利用喷墨打印机中的特定喷头，将混合有微发光二极管单元的溶液滴入所述第一开口内，使所述微发光二极管单元形成于所述第一开口内；在所述微发光二极管单元上形成第二电极层；在所述第二电极层上形成封装层。本申请利用喷墨打印机中的特定喷头，将混合有微发光二极管单元的溶液滴入阵列基板上，完成所述微发光二极管单元从母板到阵列基板的转移，降低了所述微发光二极管的转移难度，提高了微发光二极管显示面板的良率。\n\n[0093]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10642, 23696, '技术领域\n\n[0001]本发明是有关于显示器领域，特别是有关于一种背光模块及液晶显示器。\n\n背景技术\n\n[0002]为了达成全面屏的需求，侧入式入光方案在边框的缩减存在极限，一般而言，在下边框区需要预留软性电路板的连接区，因此下边框的宽度的极限大致上是2至3毫米左右。相反的，直下式入光方案不需预留上述软性电路板的连接区，所以可进一步缩减上、下、左及右边框的宽度。\n\n[0003]请参照图1A及1B，分别为现有的背光模块10的剖面示意图与上视示意图。目前的直下式入光方案，由于发光二极管(未绘示)及焊盘11为非反射体，所以需在未设置发光二极管与焊盘11的位置设置反射层12，以提高亮度。然而，为了避免在设置反射层12时的工艺误差而遮挡所述焊盘11，现有技术是在焊盘11的周围定义不设置反射层12的一禁制区13。然而，上述的方式会使得反射层12的比例下降，进而降低了亮度。\n\n[0004]故，有必要提供一种背光模块及液晶显示器，以解决现有技术所存在的问题。\n\n发明内容\n\n[0005]有鉴于此，本发明提供一种背光模块及液晶显示器，以解决由于反射层的比例下降，而导致背光模块及液晶显示器的亮度不足的问题。\n\n[0006]本发明的一目的在于提供一种背光模块，其通过在反射图案层设有对应多个焊盘的位置的多个开口，并且所述多个开口的开口尺寸小于所述多个焊盘的焊盘尺寸，进而提升反射图案层占所述基板的比例，故可提升亮度。\n\n[0007]本发明的另一目的在于提供一种液晶显示器，其可以包含有本发明实施例的背光模块，进而提升液晶显示器的显示亮度。\n\n[0008]为达成本发明的前述目的，本发明一实施例提供一种背光模块，其中所述背光模块包含：一基板、多个焊盘及一反射图案层。所述多个焊盘散布在所述基板上且各具有一焊盘尺寸。所述反射图案层覆盖所述多个焊盘及所述基板，其中所述反射图案层具有多个开口，所述多个开口的位置对应所述多个焊盘的位置，且所述多个开口各具有一开口尺寸，其中所述开口尺寸小于对应的所述焊盘尺寸。\n\n[0009]在本发明的一实施例中，所述背光模块更包含多个发光二极管芯片，设在所述多个焊盘上且电性连接所述多个焊盘，其中所述多个发光二极管芯片各具有一芯片尺寸，所述芯片尺寸小于或等于对应的所述开口尺寸。\n\n[0010]在本发明的一实施例中，所述芯片尺寸介于100至500微米之间。\n\n[0011]在本发明的一实施例中，所述背光模块更包含至少一光学层，所述至少一光学层覆盖所述反射图案层与所述多个发光二极管芯片。\n\n[0012]在本发明的一实施例中，所述至少一光学层包含一荧光层、一扩散层与一增亮层中的至少一个。\n\n[0013]在本发明的一实施例中，所述背光模块是一直下式背光模块。\n\n[0014]在本发明的一实施例中，所述焊盘尺寸是介于600至1000微米之间。\n\n[0015]在本发明的一实施例中，所述开口尺寸是介于100至500微米之间。\n\n[0016]再者，本发明另一实施例提供一种液晶显示器，其中所述液晶显示器包含上述的背光模块。\n\n[0017]与现有技术相比较，本发明实施例的背光模块及液晶显示器，其通过在背光模块的反射图案层设有对应多个焊盘的位置的多个开口，并且所述多个开口的开口尺寸小于所述多个焊盘的焊盘尺寸，进而提升反射图案层占所述基板的比例，故可提升背光模块及液晶显示器的亮度。\n\n[0018]为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下：\n\n附图说明\n\n[0019]图1A是现有的背光模块的剖面示意图。\n\n[0020]图1B是现有的背光模块的上视示意图。\n\n[0021]图2A是本发明实施例的背光模块的剖面示意图。\n\n[0022]图2B是本发明实施例的背光模块的上视示意图。\n\n[0023]图2C是本发明另一实施例的背光模块的剖面示意图。\n\n[0024]图3是本发明实施例的液晶显示器的剖面示意图。\n\n具体实施方式\n\n[0025]以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。再者，本发明所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧面、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。\n\n[0026]请参照一并参照图2A及2B所示，图2A是本发明实施例的背光模块20的剖面示意图；及图2B是本发明实施例的背光模块20的上视示意图，其中图2B未绘示有发光二极管芯片24。本发明一实施例的背光模块20例如是一直下型背光模块。所述背光模块20主要包含一基板21、多个焊盘22及一反射图案层23。所述基板21可承载所述背光模块20的构件，例如所述多个焊盘22及所述反射图案层23，或者其他构件。在一实施例中，所述基板21例如是一软质基板或一硬质基板。在一范例中，所述软质基板例如是一软质电路板。在另一范例中，所述硬质基板例如是一硬质电路板。在另一实施例中，所述软质电路板或所述硬质电路板由下至上依序可包含有一保护层、一第一铜线图案层、一绝缘间隔层及一第二铜线图案层。\n\n[0027]本发明一实施例的背光模块20的多个焊盘22散布在所述基板21上且各具有一焊盘尺寸22A。在一实施例中，所述多个焊盘22的底部可电性连接所述基板21(例如所述软质电路板或所述硬质电路板)。在另一实施例中，所述焊盘尺寸22A大于现有技术中所使用的焊盘尺寸。具体而言，请一并参照图1A至2B，现有技术由于需要在焊盘11的周围定义有禁制区13，且焊盘13本身非反射体，所以焊盘13往往是朝向小尺寸的方向制作。相反的，本发明实施例的背光模块20则是扩大焊盘尺寸22A(例如若是现有技术的焊盘11尺寸介于100至500微米之间，则本发明实施例的所述焊盘尺寸22A是介于600至1000微米之间)，并且通过反射图案层23的设置方式来增强反射效果，进而提高亮度。详细说明请参照后面段落的描述。在一实施例中，所述焊盘尺寸22A例如是650微米、700微米、750微米、800微米、850微米、900微米或950微米。\n\n[0028]本发明一实施例的背光模块20的反射图案层23覆盖所述多个焊盘22及所述基板21，其中所述反射图案层23具有多个开口231，所述多个开口231的位置对应所述多个焊盘22的位置，且所述多个开口231各具有一开口尺寸231A，其中所述开口尺寸231A小于对应的所述焊盘尺寸22A。在一实施例中，所述反射图案层23为一白色反射层，其主要功能可提供电性阻隔和提高光线反射率。所述反射图案层23可以为背光模块领域中常用的白色颜料树脂混合层，也可以为具有多个无机膜层的一复合光学反射层。在一范例中，所述反射图案层23的一材质例如是石油通过精炼后所形成液态烃的混合物。\n\n[0029]这边要提到的是，所述开口尺寸231A例如是对应于现有技术的焊盘尺寸。例如，现有技术的焊盘尺寸11A介于100至500微米之间，则本发明实施例的开口尺寸231A也是介于100至500微米之间(例如150微米、200微米、250微米、300微米、350微米、400微米或450微米)。这边要提到的是，本发明实施例的多个焊盘22各至少有一部分(例如所述多个焊盘22的边缘)被所述反射图案层23所覆盖，并且所述多个焊盘22的剩余部分是通过所述多个开口231所露出。在一实施例中，所述背光模块20可包含多个发光二极管芯片24，所述多个发光二极管芯片24设在所述多个焊盘22上且例如通过所述多个开口231来电性连接所述多个焊盘22，其中所述多个发光二极管芯片24各具有一芯片尺寸24A，所述芯片尺寸小于或等于对应的所述开口尺寸。所述多个发光二极管芯片24可发出光线241，并且所述光线241可通过所述反射图案层23的反射以增加所述背光模块20的亮度。在一范例中，所述芯片尺寸24A介于100至500微米之间(例如150微米、200微米、250微米、300微米、350微米、400微米或450微米)。\n\n[0030]再次说明的是对于所述焊盘尺寸22A与对应的所述开口尺寸231A与对应的所述芯片尺寸24A之间的关系。首先，所述开口尺寸231A关联于所述芯片尺寸24A，亦即所述开口尺寸231A是根据所述芯片尺寸24A来设计。例如，所述芯片尺寸24A为300微米时，则所述开口尺寸231A可以是300微米以上。在较佳的范例中，所述芯片尺寸24A与所述开口尺寸231A相等，以避免所述反射层12的比例下降。在决定所述开口尺寸231A后，再决定所述焊盘尺寸22A，例如所述开口尺寸231A为300微米时，所述焊盘尺寸22A可为700微米。由上可知，所述焊盘尺寸22A与对应的所述开口尺寸231A与对应的所述芯片尺寸24A是可以根据需求进行适当调整。\n\n[0031]由上可知，本发明实施例的背光模块20是通过扩大焊盘尺寸的方式，并且通过所述反射图案层23来定义所述多个焊盘22的露出区域，进而可在不设置禁制区13的前提下，保证所述多个焊盘22不被所述反射图案层23所覆盖。再者，由于不需设置禁制区13，所以可提升本发明实施例的背光模块20的亮度。\n\n[0032]请参照图2C，其是本发明另一实施例的背光模块20的剖面示意图。在一实施例中，所述背光模块20更包含至少一光学层25，所述至少一光学层25覆盖所述反射图案层23与所述多个发光二极管芯片24。在一范例中，所述至少一光学层包含一荧光层251(例如可包含透明硅胶及萤光颗粒)、一扩散层252与一增亮层253中的至少一个。要提到的是，所述荧光层251、所述扩散层252与所述增亮层253所使用的材质与制作方式例如可参考一般的背光模块中所使用的荧光层、扩散层与增亮层的材质与制作方式，故不再赘述。\n\n[0033]请参照图3，其是本发明一实施例的液晶显示器30的剖面示意图。本发明另一实施例提出一种液晶显示器30，所述液晶显示器30包含有上述任一实施例的背光模块20。在一实施例中，所述液晶显示器30还可包含一般液晶显示器的其他构件，例如一显示模块31，其中所述背光模块20所产生的光线可穿过所述显示模块31，进而显示所述液晶显示器20的图像或影像。\n\n[0034]由上可知，本发明实施例的液晶显示器30的采用上述的背光模块20。背光模块20是通过扩大焊盘尺寸的方式，并且通过所述反射图案层23来定义所述多个焊盘22的露出区域，进而可在不设置禁制区13的前提下，保证所述多个焊盘22不被所述反射图案层23所覆盖。再者，由于不需设置禁制区13，所以可提升背光模块20的亮度。因此，可提升包含有背光模块20的本发明实施例的液晶显示器30的亮度\n\n[0035]本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。', '技术领域\n\n[0001]本发明是有关于显示器领域，特别是有关于一种背光模块及液晶显示器。\n\n背景技术\n\n[0002]为了达成全面屏的需求，侧入式入光方案在边框的缩减存在极限，一般而言，在下边框区需要预留软性电路板的连接区，因此下边框的宽度的极限大致上是2至3毫米左右。相反的，直下式入光方案不需预留上述软性电路板的连接区，所以可进一步缩减上、下、左及右边框的宽度。\n\n[0003]请参照图1A及1B，分别为现有的背光模块10的剖面示意图与上视示意图。目前的直下式入光方案，由于发光二极管(未绘示)及焊盘11为非反射体，所以需在未设置发光二极管与焊盘11的位置设置反射层12，以提高亮度。然而，为了避免在设置反射层12时的工艺误差而遮挡所述焊盘11，现有技术是在焊盘11的周围定义不设置反射层12的一禁制区13。然而，上述的方式会使得反射层12的比例下降，进而降低了亮度。\n\n[0004]故，有必要提供一种背光模块及液晶显示器，以解决现有技术所存在的问题。\n\n发明内容\n\n[0005]有鉴于此，本发明提供一种背光模块及液晶显示器，以解决由于反射层的比例下降，而导致背光模块及液晶显示器的亮度不足的问题。\n\n[0006]本发明的一目的在于提供一种背光模块，其通过在反射图案层设有对应多个焊盘的位置的多个开口，并且所述多个开口的开口尺寸小于所述多个焊盘的焊盘尺寸，进而提升反射图案层占所述基板的比例，故可提升亮度。\n\n[0007]本发明的另一目的在于提供一种液晶显示器，其可以包含有本发明实施例的背光模块，进而提升液晶显示器的显示亮度。\n\n[0008]为达成本发明的前述目的，本发明一实施例提供一种背光模块，其中所述背光模块包含：一基板、多个焊盘及一反射图案层。所述多个焊盘散布在所述基板上且各具有一焊盘尺寸。所述反射图案层覆盖所述多个焊盘及所述基板，其中所述反射图案层具有多个开口，所述多个开口的位置对应所述多个焊盘的位置，且所述多个开口各具有一开口尺寸，其中所述开口尺寸小于对应的所述焊盘尺寸。\n\n[0009]在本发明的一实施例中，所述背光模块更包含多个发光二极管芯片，设在所述多个焊盘上且电性连接所述多个焊盘，其中所述多个发光二极管芯片各具有一芯片尺寸，所述芯片尺寸小于或等于对应的所述开口尺寸。\n\n[0010]在本发明的一实施例中，所述芯片尺寸介于100至500微米之间。\n\n[0011]在本发明的一实施例中，所述背光模块更包含至少一光学层，所述至少一光学层覆盖所述反射图案层与所述多个发光二极管芯片。\n\n[0012]在本发明的一实施例中，所述至少一光学层包含一荧光层、一扩散层与一增亮层中的至少一个。\n\n[0013]在本发明的一实施例中，所述背光模块是一直下式背光模块。\n\n[0014]在本发明的一实施例中，所述焊盘尺寸是介于600至1000微米之间。\n\n[0015]在本发明的一实施例中，所述开口尺寸是介于100至500微米之间。\n\n[0016]再者，本发明另一实施例提供一种液晶显示器，其中所述液晶显示器包含上述的背光模块。\n\n[0017]与现有技术相比较，本发明实施例的背光模块及液晶显示器，其通过在背光模块的反射图案层设有对应多个焊盘的位置的多个开口，并且所述多个开口的开口尺寸小于所述多个焊盘的焊盘尺寸，进而提升反射图案层占所述基板的比例，故可提升背光模块及液晶显示器的亮度。\n\n[0018]为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下：\n\n附图说明\n\n[0019]图1A是现有的背光模块的剖面示意图。\n\n[0020]图1B是现有的背光模块的上视示意图。\n\n[0021]图2A是本发明实施例的背光模块的剖面示意图。\n\n[0022]图2B是本发明实施例的背光模块的上视示意图。\n\n[0023]图2C是本发明另一实施例的背光模块的剖面示意图。\n\n[0024]图3是本发明实施例的液晶显示器的剖面示意图。\n\n具体实施方式\n\n[0025]以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。再者，本发明所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧面、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。\n\n[0026]请参照一并参照图2A及2B所示，图2A是本发明实施例的背光模块20的剖面示意图；及图2B是本发明实施例的背光模块20的上视示意图，其中图2B未绘示有发光二极管芯片24。本发明一实施例的背光模块20例如是一直下型背光模块。所述背光模块20主要包含一基板21、多个焊盘22及一反射图案层23。所述基板21可承载所述背光模块20的构件，例如所述多个焊盘22及所述反射图案层23，或者其他构件。在一实施例中，所述基板21例如是一软质基板或一硬质基板。在一范例中，所述软质基板例如是一软质电路板。在另一范例中，所述硬质基板例如是一硬质电路板。在另一实施例中，所述软质电路板或所述硬质电路板由下至上依序可包含有一保护层、一第一铜线图案层、一绝缘间隔层及一第二铜线图案层。\n\n[0027]本发明一实施例的背光模块20的多个焊盘22散布在所述基板21上且各具有一焊盘尺寸22A。在一实施例中，所述多个焊盘22的底部可电性连接所述基板21(例如所述软质电路板或所述硬质电路板)。在另一实施例中，所述焊盘尺寸22A大于现有技术中所使用的焊盘尺寸。具体而言，请一并参照图1A至2B，现有技术由于需要在焊盘11的周围定义有禁制区13，且焊盘13本身非反射体，所以焊盘13往往是朝向小尺寸的方向制作。相反的，本发明实施例的背光模块20则是扩大焊盘尺寸22A(例如若是现有技术的焊盘11尺寸介于100至500微米之间，则本发明实施例的所述焊盘尺寸22A是介于600至1000微米之间)，并且通过反射图案层23的设置方式来增强反射效果，进而提高亮度。详细说明请参照后面段落的描述。在一实施例中，所述焊盘尺寸22A例如是650微米、700微米、750微米、800微米、850微米、900微米或950微米。\n\n[0028]本发明一实施例的背光模块20的反射图案层23覆盖所述多个焊盘22及所述基板21，其中所述反射图案层23具有多个开口231，所述多个开口231的位置对应所述多个焊盘22的位置，且所述多个开口231各具有一开口尺寸231A，其中所述开口尺寸231A小于对应的所述焊盘尺寸22A。在一实施例中，所述反射图案层23为一白色反射层，其主要功能可提供电性阻隔和提高光线反射率。所述反射图案层23可以为背光模块领域中常用的白色颜料树脂混合层，也可以为具有多个无机膜层的一复合光学反射层。在一范例中，所述反射图案层23的一材质例如是石油通过精炼后所形成液态烃的混合物。\n\n[0029]这边要提到的是，所述开口尺寸231A例如是对应于现有技术的焊盘尺寸。例如，现有技术的焊盘尺寸11A介于100至500微米之间，则本发明实施例的开口尺寸231A也是介于100至500微米之间(例如150微米、200微米、250微米、300微米、350微米、400微米或450微米)。这边要提到的是，本发明实施例的多个焊盘22各至少有一部分(例如所述多个焊盘22的边缘)被所述反射图案层23所覆盖，并且所述多个焊盘22的剩余部分是通过所述多个开口231所露出。在一实施例中，所述背光模块20可包含多个发光二极管芯片24，所述多个发光二极管芯片24设在所述多个焊盘22上且例如通过所述多个开口231来电性连接所述多个焊盘22，其中所述多个发光二极管芯片24各具有一芯片尺寸24A，所述芯片尺寸小于或等于对应的所述开口尺寸。所述多个发光二极管芯片24可发出光线241，并且所述光线241可通过所述反射图案层23的反射以增加所述背光模块20的亮度。在一范例中，所述芯片尺寸24A介于100至500微米之间(例如150微米、200微米、250微米、300微米、350微米、400微米或450微米)。\n\n[0030]再次说明的是对于所述焊盘尺寸22A与对应的所述开口尺寸231A与对应的所述芯片尺寸24A之间的关系。首先，所述开口尺寸231A关联于所述芯片尺寸24A，亦即所述开口尺寸231A是根据所述芯片尺寸24A来设计。例如，所述芯片尺寸24A为300微米时，则所述开口尺寸231A可以是300微米以上。在较佳的范例中，所述芯片尺寸24A与所述开口尺寸231A相等，以避免所述反射层12的比例下降。在决定所述开口尺寸231A后，再决定所述焊盘尺寸22A，例如所述开口尺寸231A为300微米时，所述焊盘尺寸22A可为700微米。由上可知，所述焊盘尺寸22A与对应的所述开口尺寸231A与对应的所述芯片尺寸24A是可以根据需求进行适当调整。\n\n[0031]由上可知，本发明实施例的背光模块20是通过扩大焊盘尺寸的方式，并且通过所述反射图案层23来定义所述多个焊盘22的露出区域，进而可在不设置禁制区13的前提下，保证所述多个焊盘22不被所述反射图案层23所覆盖。再者，由于不需设置禁制区13，所以可提升本发明实施例的背光模块20的亮度。\n\n[0032]请参照图2C，其是本发明另一实施例的背光模块20的剖面示意图。在一实施例中，所述背光模块20更包含至少一光学层25，所述至少一光学层25覆盖所述反射图案层23与所述多个发光二极管芯片24。在一范例中，所述至少一光学层包含一荧光层251(例如可包含透明硅胶及萤光颗粒)、一扩散层252与一增亮层253中的至少一个。要提到的是，所述荧光层251、所述扩散层252与所述增亮层253所使用的材质与制作方式例如可参考一般的背光模块中所使用的荧光层、扩散层与增亮层的材质与制作方式，故不再赘述。\n\n[0033]请参照图3，其是本发明一实施例的液晶显示器30的剖面示意图。本发明另一实施例提出一种液晶显示器30，所述液晶显示器30包含有上述任一实施例的背光模块20。在一实施例中，所述液晶显示器30还可包含一般液晶显示器的其他构件，例如一显示模块31，其中所述背光模块20所产生的光线可穿过所述显示模块31，进而显示所述液晶显示器20的图像或影像。\n\n[0034]由上可知，本发明实施例的液晶显示器30的采用上述的背光模块20。背光模块20是通过扩大焊盘尺寸的方式，并且通过所述反射图案层23来定义所述多个焊盘22的露出区域，进而可在不设置禁制区13的前提下，保证所述多个焊盘22不被所述反射图案层23所覆盖。再者，由于不需设置禁制区13，所以可提升背光模块20的亮度。因此，可提升包含有背光模块20的本发明实施例的液晶显示器30的亮度\n\n[0035]本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。');
INSERT INTO `os_patent_instruction_text` VALUES (10643, 23697, '技术领域\n\n[0001]本发明涉及显示技术领域，尤指一种薄型背光模组及其制作方法。\n\n背景技术\n\n[0002]由于电子产品都朝着轻、薄、短、小的目标发展，薄型化概念已成为显示装置持续努力的方向。因薄型化的趋势，显示装置的厚度相应的受到限制，而显示装置薄型化与否的关键因素之一是背光模组的厚度。LED已经广泛用于液晶显示的背光模组，现有的LED背光模组主要分为两种型式，一是侧入式(edge-lit type)，另一是直下式(direct-lit type)。\n\n[0003]直下式LED背光模组具有窄边框的优点，在大尺寸显示领域得到广泛的应用，但却具有厚度增加的问题。若采用小尺寸的迷你发光二极体(mini-LED)以更小的间距(pitch)排列则可获得较小的混光距离，达到小尺寸直下式背光源实现轻、薄、窄的可能性。然而更小的间距意味着单一背光需要采用更多颗mini-LED，因而产生增加成本的问题。\n\n[0004]此外，目前小尺寸显示器采用侧入式LED背光源，由于LED本身具有一定厚度，需要通过导光板等元件将光线均匀扩散，避免近光处产生热点(hotspot)现象，因此需要一定的混光距离。然而为了缩短混光距离实现降低厚度的需求，但通常降低混光距离又会伴随着背光效率的急剧衰减的问题，因此如何有效缩短混光距离、达到全面屏的需求，而且成本又不增加的情况是业者亟须挑战的课题。\n\n发明内容\n\n[0005]有鉴于此，本发明提供一种薄型背光模组及其制作方法，以解决现有技术所存在厚度增加，混光距离不足，无法实现将发光源的正面光线最大程度引出的问题。\n\n[0006]本发明的目的在于提供一种薄型背光模组及其制作方法，通过在荧光层表面设置表面微结构与粒子微结构，共同构成散设发光源光线的引导层，从而能够实现更小的混光距离与超薄的背光模组厚度。\n\n[0007]为达成本发明的前述目的，本发明提供一种薄型背光模组，包括驱动基板、多个发光源、荧光层及多个粒子微结构。每一所述发光源阵列布设于所述驱动基板上。所述荧光层表面设置有多个表面微结构，每一所述表面微结构对应每一所述发光源。每一所述粒子微结构对应每一所述表面微结构设置，其中所述粒子微结构与所述表面微结构共同构成散设所述发光源光线的引导层。\n\n[0008]在本发明的一实施例中，所述粒子微结构包括一定浓度的雾度粒子，所述浓度介于10-90％，且所述粒子微结构的厚度介于1-100微米(μm)。\n\n[0009]在本发明的一实施例中，所述表面微结构的中心对应所述发光源的中心设置，且所述表面微结构的中心至所述荧光层的表面的连接面为斜面或弧面。\n\n[0010]在本发明的一实施例中，所述表面微结构的中心至所述荧光层的表面的长度为50-500微米(μm)，且所述表面微结构的厚度为5-100微米(μm)。\n\n[0011]在本发明的一实施例中，所述发光源为迷你发光二极体(Mini LED)或微发光二极体(Micro LED)，所述荧光层包括透光胶和与所述透光胶混合的荧光粉粒子、量子点颗粒或雾度粒子其中之一，所述驱动基板为柔性电路板(FPC)或印刷电路板(PCB)。\n\n[0012]在本发明的一实施例中，还包括反射层、扩散层及增亮层，所述反射层设置于所述驱动基板上且位于二相邻的所述发光源之间，所述扩散层设置于所述荧光层上，所述增亮层设置于所述扩散层上，其中每一所述发光源的尺寸介于100-1000微米(μm)，二相邻的所述发光源的间距介于100-2000微米(μm)。\n\n[0013]再者，本发明另提供一种薄型背光模组的制作方法，包括以下步骤：\n\n[0014]S10、提供驱动基板；\n\n[0015]S20、在所述驱动基板上阵列布设多个发光源；\n\n[0016]S30、在所述发光源上制备荧光层，在所述荧光层的表面热压出多个表面微结构，每一所述表面微结构对应每一所述发光源；及\n\n[0017]S40、在所述表面微结构上制备含有一浓度的粒子微结构，所述粒子微结构与所述表面微结构共同构成散设所述发光源光线的引导层。\n\n[0018]在本发明的一实施例中，在步骤S30中，采用热压膜具将每一所述表面微结构制作成中心至所述荧光层表面的连接面为斜面或弧面，其中所述表面微结构的中心至所述荧光层的表面的长度为50-500微米(μm)，且所述表面微结构的厚度为5-100微米(μm)。\n\n[0019]在本发明的一实施例中，在步骤S40中，采用钢网工艺以涂布或印刷一透光流体材料于所述表面微结构上，其中所述浓度介于10-90％，且所述粒子微结构的厚度介于1-100微米(μm)。\n\n[0020]在本发明的一实施例中，在步骤S30之前，进一步包括制备多个反射层，每一所述反射层形成于二相邻的所述发光源之间。\n\n[0021]本发明还有如下功效，本发明在阵列布设的发光源上方，通过热压方式在荧光层上设置表面微结构，然后在表面微结构上通过喷涂或印刷的方式设置包含一定浓度雾度的粒子微结构，增强光线扩散作用，达到最大化程度将发光源的光线导向四周、扩大光形，以及降低背光模组混光厚度的目的。此外，所述表面微结构与雾度粒子微结构制作方法与现有LED封装工艺相兼容，并不需要引入新的设备，具有高效节省成本、亮度效率较高且实现更小混光距离的优势。\n\n附图说明\n\n[0022]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0023]图1是本发明薄型背光模组的剖面示意图；\n\n[0024]图2是本发明薄型背光模组的表面微结构的示意图；\n\n[0025]图3是本发明薄型背光模组的表面微结构的另一示意图；\n\n[0026]图4是本发明薄型背光模组的引导层的示意图；及\n\n[0027]图5是本发明薄型背光模组的制作方法的流程图。\n\n具体实施方式\n\n[0028]在具体实施方式中提及“实施例”意指结合实施例描述的特定特征、结构或特性可以包含在本发明的至少一个实施例中。在说明书中的不同位置出现的相同用语并非必然被限制为相同的实施方式，而应当理解为与其它实施例互为独立的或备选的实施方式。在本发明提供的实施例所公开的技术方案启示下，本领域的普通技术人员应理解本发明所描述的实施例可具有其他符合本发明构思的技术方案结合或变化。\n\n[0029]以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]、[竖直]、[水平]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0030]请参照图1至图4所示，本发明提供一种薄型背光模组，包括驱动基板1、多个发光源2、荧光层3及多个粒子微结构5。如图所示的薄型背光模组较佳为直下式背光模组，然而在其他不同的实施例中，薄型背光模组也可应用在侧入式或其他适合的背光模组中。具体而言，将相关微结构工艺用于侧入式背光的线光源lightbar也可以适用，同样有利于降低混光距离，从而实现窄边框的作用。\n\n[0031]每一所述发光源2阵列布设于所述驱动基板1上。所述荧光层3表面设置有多个表面微结构4，每一所述表面微结构4对应每一所述发光源2。每一所述粒子微结构5对应每一所述表面微结构4设置，其中所述粒子微结构5与所述表面微结构4共同构成散设所述发光源2光线的引导层6。\n\n[0032]在如图2至图4所示的实施例中，所述表面微结构4的中心对应所述发光源2的中心设置，即对应所述发光源2的中心呈对称设置。所述表面微结构4的中心至所述荧光层3的表面的连接面为斜面或弧面。所述表面微结构4所形成的斜面或弧面能够有效地将光线往两侧射出，避免光线过多的重新进入所述发光源2而造成二次吸收。\n\n[0033]所述表面微结构4的中心至所述荧光层3的表面的长度41，通常近似等于所述发光源2的边长一半，亦即为50-500微米(μm)，且所述表面微结构4的厚度42为5-100微米(μm)。所述粒子微结构5包括一定浓度的雾度粒子(Haze Particles)为液滴状的透光液体，使所述发光源2的光线充分扩散。在此所述的浓度介于10-90％，且所述粒子微结构5的厚度52介于1-100微米(μm)。具雾度的所述粒子微结构5在与所述表面微结构4形成的引导层6，有利地将发光源2发出的光线更有序地导向四周，充分地将光线散射，增强整体光线的出光光形(Spatial distribution)，有效降低混光距离。\n\n[0034]在本发明的一实施例中，所述发光源2为迷你发光二极体(mini-LED)、微发光二极体(micro-LED)或其他小型发光二极体。当相邻的所述发光源2的间距越远，降低背光模组的整体厚度则会越明显。所述荧光层3包括透光胶31和与所述透光胶31混合的荧光粉粒子32、量子点颗粒或雾度粒子其中之一，其中透光胶31例如有机硅胶等。所述驱动基板1可为柔性电路板(FPC)或印刷电路板(PCB)，视需要而改变。\n\n[0035]此外，如图1所示，还包括反射层7、扩散层8及增亮层9。所述反射层7设置于所述驱动基板1上且位于二相邻的所述发光源2之间，以增加光线的折射回收利用。所述扩散层8设置于所述荧光层3上。所述增亮层9设置于所述扩散层8上，所述的扩散层8及增亮层9均为背光模组现有技术，在此不多加赘述。每一所述发光源2的尺寸介于100-1000微米(μm)，二相邻的所述发光源2的间距介于100-2000微米(μm)。\n\n[0036]请一并参考图5所示，为本发明薄型背光模组的制作方法的流程图。如图5所示，本发明另提供一种薄型背光模组的制作方法，包括以下步骤：S10、提供驱动基板；S20、在所述驱动基板上阵列布设多个发光源；S30、在所述发光源上制备荧光层，在所述荧光层的表面热压出多个表面微结构，每一所述表面微结构对应每一所述发光源；及S40、在所述表面微结构上制备含有一浓度的粒子微结构，所述粒子微结构与所述表面微结构共同构成散设所述发光源光线的引导层。\n\n[0037]在步骤S20及S30中，所述发光源采用一种超薄面发光源，例如蓝光mini-LED阵列，通过钢网掩膜工艺在mini-LED出光面涂覆或喷墨打印含有荧光粉粒子等的有机硅胶材料(即荧光层)，所述有机硅胶材料在高温下mini-LED表面形成液滴状并且在降温过程中固化，固化成液滴状的mini-LED的光形(光线射出的形狀)更能够展开。\n\n[0038]在步骤S30中，采用热压膜具将每一所述表面微结构制作成中心至所述荧光层表面的连接面为斜面或弧面，其中所述表面微结构的中心至所述荧光层的表面的长度为50-500微米(μm)，且所述表面微结构的厚度为5-100微米(μm)。具体而言，所述荧光层是通过以透光材料(例如有机硅胶等)以热压工艺填平，同时通过热压膜具制备所述表面微结构，其中透光材料中可渗入荧光粉粒子、量子点颗粒、雾度粒子等，所述粒子受到蓝光或紫外光的激发会产生对应的绿光和红光，以混合成白光。\n\n[0039]此外，在步骤S30之前，进一步包括制备多个反射层，每一所述反射层形成于二相邻的所述发光源之间。所述反射层可以例如蒸鍍、濺鍍或離子被覆等工艺制作，材料优选为金属或其合金。在步骤S40中，采用钢网工艺以涂布或印刷一透光流体材料于所述表面微结构上，其中所述浓度介于10-90％，且所述粒子微结构的厚度介于1-100微米(μm)。所述粒子微结构表面可增加光线扩散效果，且所述透光流体材料成型后会固化。\n\n[0040]所述表面微结构与所述雾度粒子微结构共同构成散设所述发光源光线的引导层，所述引导层能够增强光线扩散作用且其制作方式与现有的LED封装制程相兼容，并不需要引入新的制作设备，具有节省成本、亮度效率较高且实现更小混光距离的优势。\n\n[0041]因此，本发明采用一种超薄面发光源，例如蓝光mini-LED阵列，通过钢网掩膜工艺在mini-LED出光面涂覆或喷墨打印含有荧光粉粒子等的有机硅胶材料，所述有机硅胶材料在高温下mini-LED表面形成液滴状并且在降温过程中固化。所述液滴状的mini-LED的光形(光线射出的形狀)能够展开，使背光模组厚度有效降低。\n\n[0042]综上所述，虽然本发明结合其具体实施例而被描述，应该理解的是，许多替代、修改及变化对于那些本领域的技术人员将是显而易见的。因此，其意在包含落入所附权利要求书的范围内的所有替代、修改及变化。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤指一种薄型背光模组及其制作方法。\n\n背景技术\n\n[0002]由于电子产品都朝着轻、薄、短、小的目标发展，薄型化概念已成为显示装置持续努力的方向。因薄型化的趋势，显示装置的厚度相应的受到限制，而显示装置薄型化与否的关键因素之一是背光模组的厚度。LED已经广泛用于液晶显示的背光模组，现有的LED背光模组主要分为两种型式，一是侧入式(edge-lit type)，另一是直下式(direct-lit type)。\n\n[0003]直下式LED背光模组具有窄边框的优点，在大尺寸显示领域得到广泛的应用，但却具有厚度增加的问题。若采用小尺寸的迷你发光二极体(mini-LED)以更小的间距(pitch)排列则可获得较小的混光距离，达到小尺寸直下式背光源实现轻、薄、窄的可能性。然而更小的间距意味着单一背光需要采用更多颗mini-LED，因而产生增加成本的问题。\n\n[0004]此外，目前小尺寸显示器采用侧入式LED背光源，由于LED本身具有一定厚度，需要通过导光板等元件将光线均匀扩散，避免近光处产生热点(hotspot)现象，因此需要一定的混光距离。然而为了缩短混光距离实现降低厚度的需求，但通常降低混光距离又会伴随着背光效率的急剧衰减的问题，因此如何有效缩短混光距离、达到全面屏的需求，而且成本又不增加的情况是业者亟须挑战的课题。\n\n发明内容\n\n[0005]有鉴于此，本发明提供一种薄型背光模组及其制作方法，以解决现有技术所存在厚度增加，混光距离不足，无法实现将发光源的正面光线最大程度引出的问题。\n\n[0006]本发明的目的在于提供一种薄型背光模组及其制作方法，通过在荧光层表面设置表面微结构与粒子微结构，共同构成散设发光源光线的引导层，从而能够实现更小的混光距离与超薄的背光模组厚度。\n\n[0007]为达成本发明的前述目的，本发明提供一种薄型背光模组，包括驱动基板、多个发光源、荧光层及多个粒子微结构。每一所述发光源阵列布设于所述驱动基板上。所述荧光层表面设置有多个表面微结构，每一所述表面微结构对应每一所述发光源。每一所述粒子微结构对应每一所述表面微结构设置，其中所述粒子微结构与所述表面微结构共同构成散设所述发光源光线的引导层。\n\n[0008]在本发明的一实施例中，所述粒子微结构包括一定浓度的雾度粒子，所述浓度介于10-90％，且所述粒子微结构的厚度介于1-100微米(μm)。\n\n[0009]在本发明的一实施例中，所述表面微结构的中心对应所述发光源的中心设置，且所述表面微结构的中心至所述荧光层的表面的连接面为斜面或弧面。\n\n[0010]在本发明的一实施例中，所述表面微结构的中心至所述荧光层的表面的长度为50-500微米(μm)，且所述表面微结构的厚度为5-100微米(μm)。\n\n[0011]在本发明的一实施例中，所述发光源为迷你发光二极体(Mini LED)或微发光二极体(Micro LED)，所述荧光层包括透光胶和与所述透光胶混合的荧光粉粒子、量子点颗粒或雾度粒子其中之一，所述驱动基板为柔性电路板(FPC)或印刷电路板(PCB)。\n\n[0012]在本发明的一实施例中，还包括反射层、扩散层及增亮层，所述反射层设置于所述驱动基板上且位于二相邻的所述发光源之间，所述扩散层设置于所述荧光层上，所述增亮层设置于所述扩散层上，其中每一所述发光源的尺寸介于100-1000微米(μm)，二相邻的所述发光源的间距介于100-2000微米(μm)。\n\n[0013]再者，本发明另提供一种薄型背光模组的制作方法，包括以下步骤：\n\n[0014]S10、提供驱动基板；\n\n[0015]S20、在所述驱动基板上阵列布设多个发光源；\n\n[0016]S30、在所述发光源上制备荧光层，在所述荧光层的表面热压出多个表面微结构，每一所述表面微结构对应每一所述发光源；及\n\n[0017]S40、在所述表面微结构上制备含有一浓度的粒子微结构，所述粒子微结构与所述表面微结构共同构成散设所述发光源光线的引导层。\n\n[0018]在本发明的一实施例中，在步骤S30中，采用热压膜具将每一所述表面微结构制作成中心至所述荧光层表面的连接面为斜面或弧面，其中所述表面微结构的中心至所述荧光层的表面的长度为50-500微米(μm)，且所述表面微结构的厚度为5-100微米(μm)。\n\n[0019]在本发明的一实施例中，在步骤S40中，采用钢网工艺以涂布或印刷一透光流体材料于所述表面微结构上，其中所述浓度介于10-90％，且所述粒子微结构的厚度介于1-100微米(μm)。\n\n[0020]在本发明的一实施例中，在步骤S30之前，进一步包括制备多个反射层，每一所述反射层形成于二相邻的所述发光源之间。\n\n[0021]本发明还有如下功效，本发明在阵列布设的发光源上方，通过热压方式在荧光层上设置表面微结构，然后在表面微结构上通过喷涂或印刷的方式设置包含一定浓度雾度的粒子微结构，增强光线扩散作用，达到最大化程度将发光源的光线导向四周、扩大光形，以及降低背光模组混光厚度的目的。此外，所述表面微结构与雾度粒子微结构制作方法与现有LED封装工艺相兼容，并不需要引入新的设备，具有高效节省成本、亮度效率较高且实现更小混光距离的优势。\n\n附图说明\n\n[0022]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0023]图1是本发明薄型背光模组的剖面示意图；\n\n[0024]图2是本发明薄型背光模组的表面微结构的示意图；\n\n[0025]图3是本发明薄型背光模组的表面微结构的另一示意图；\n\n[0026]图4是本发明薄型背光模组的引导层的示意图；及\n\n[0027]图5是本发明薄型背光模组的制作方法的流程图。\n\n具体实施方式\n\n[0028]在具体实施方式中提及“实施例”意指结合实施例描述的特定特征、结构或特性可以包含在本发明的至少一个实施例中。在说明书中的不同位置出现的相同用语并非必然被限制为相同的实施方式，而应当理解为与其它实施例互为独立的或备选的实施方式。在本发明提供的实施例所公开的技术方案启示下，本领域的普通技术人员应理解本发明所描述的实施例可具有其他符合本发明构思的技术方案结合或变化。\n\n[0029]以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]、[竖直]、[水平]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0030]请参照图1至图4所示，本发明提供一种薄型背光模组，包括驱动基板1、多个发光源2、荧光层3及多个粒子微结构5。如图所示的薄型背光模组较佳为直下式背光模组，然而在其他不同的实施例中，薄型背光模组也可应用在侧入式或其他适合的背光模组中。具体而言，将相关微结构工艺用于侧入式背光的线光源lightbar也可以适用，同样有利于降低混光距离，从而实现窄边框的作用。\n\n[0031]每一所述发光源2阵列布设于所述驱动基板1上。所述荧光层3表面设置有多个表面微结构4，每一所述表面微结构4对应每一所述发光源2。每一所述粒子微结构5对应每一所述表面微结构4设置，其中所述粒子微结构5与所述表面微结构4共同构成散设所述发光源2光线的引导层6。\n\n[0032]在如图2至图4所示的实施例中，所述表面微结构4的中心对应所述发光源2的中心设置，即对应所述发光源2的中心呈对称设置。所述表面微结构4的中心至所述荧光层3的表面的连接面为斜面或弧面。所述表面微结构4所形成的斜面或弧面能够有效地将光线往两侧射出，避免光线过多的重新进入所述发光源2而造成二次吸收。\n\n[0033]所述表面微结构4的中心至所述荧光层3的表面的长度41，通常近似等于所述发光源2的边长一半，亦即为50-500微米(μm)，且所述表面微结构4的厚度42为5-100微米(μm)。所述粒子微结构5包括一定浓度的雾度粒子(Haze Particles)为液滴状的透光液体，使所述发光源2的光线充分扩散。在此所述的浓度介于10-90％，且所述粒子微结构5的厚度52介于1-100微米(μm)。具雾度的所述粒子微结构5在与所述表面微结构4形成的引导层6，有利地将发光源2发出的光线更有序地导向四周，充分地将光线散射，增强整体光线的出光光形(Spatial distribution)，有效降低混光距离。\n\n[0034]在本发明的一实施例中，所述发光源2为迷你发光二极体(mini-LED)、微发光二极体(micro-LED)或其他小型发光二极体。当相邻的所述发光源2的间距越远，降低背光模组的整体厚度则会越明显。所述荧光层3包括透光胶31和与所述透光胶31混合的荧光粉粒子32、量子点颗粒或雾度粒子其中之一，其中透光胶31例如有机硅胶等。所述驱动基板1可为柔性电路板(FPC)或印刷电路板(PCB)，视需要而改变。\n\n[0035]此外，如图1所示，还包括反射层7、扩散层8及增亮层9。所述反射层7设置于所述驱动基板1上且位于二相邻的所述发光源2之间，以增加光线的折射回收利用。所述扩散层8设置于所述荧光层3上。所述增亮层9设置于所述扩散层8上，所述的扩散层8及增亮层9均为背光模组现有技术，在此不多加赘述。每一所述发光源2的尺寸介于100-1000微米(μm)，二相邻的所述发光源2的间距介于100-2000微米(μm)。\n\n[0036]请一并参考图5所示，为本发明薄型背光模组的制作方法的流程图。如图5所示，本发明另提供一种薄型背光模组的制作方法，包括以下步骤：S10、提供驱动基板；S20、在所述驱动基板上阵列布设多个发光源；S30、在所述发光源上制备荧光层，在所述荧光层的表面热压出多个表面微结构，每一所述表面微结构对应每一所述发光源；及S40、在所述表面微结构上制备含有一浓度的粒子微结构，所述粒子微结构与所述表面微结构共同构成散设所述发光源光线的引导层。\n\n[0037]在步骤S20及S30中，所述发光源采用一种超薄面发光源，例如蓝光mini-LED阵列，通过钢网掩膜工艺在mini-LED出光面涂覆或喷墨打印含有荧光粉粒子等的有机硅胶材料(即荧光层)，所述有机硅胶材料在高温下mini-LED表面形成液滴状并且在降温过程中固化，固化成液滴状的mini-LED的光形(光线射出的形狀)更能够展开。\n\n[0038]在步骤S30中，采用热压膜具将每一所述表面微结构制作成中心至所述荧光层表面的连接面为斜面或弧面，其中所述表面微结构的中心至所述荧光层的表面的长度为50-500微米(μm)，且所述表面微结构的厚度为5-100微米(μm)。具体而言，所述荧光层是通过以透光材料(例如有机硅胶等)以热压工艺填平，同时通过热压膜具制备所述表面微结构，其中透光材料中可渗入荧光粉粒子、量子点颗粒、雾度粒子等，所述粒子受到蓝光或紫外光的激发会产生对应的绿光和红光，以混合成白光。\n\n[0039]此外，在步骤S30之前，进一步包括制备多个反射层，每一所述反射层形成于二相邻的所述发光源之间。所述反射层可以例如蒸鍍、濺鍍或離子被覆等工艺制作，材料优选为金属或其合金。在步骤S40中，采用钢网工艺以涂布或印刷一透光流体材料于所述表面微结构上，其中所述浓度介于10-90％，且所述粒子微结构的厚度介于1-100微米(μm)。所述粒子微结构表面可增加光线扩散效果，且所述透光流体材料成型后会固化。\n\n[0040]所述表面微结构与所述雾度粒子微结构共同构成散设所述发光源光线的引导层，所述引导层能够增强光线扩散作用且其制作方式与现有的LED封装制程相兼容，并不需要引入新的制作设备，具有节省成本、亮度效率较高且实现更小混光距离的优势。\n\n[0041]因此，本发明采用一种超薄面发光源，例如蓝光mini-LED阵列，通过钢网掩膜工艺在mini-LED出光面涂覆或喷墨打印含有荧光粉粒子等的有机硅胶材料，所述有机硅胶材料在高温下mini-LED表面形成液滴状并且在降温过程中固化。所述液滴状的mini-LED的光形(光线射出的形狀)能够展开，使背光模组厚度有效降低。\n\n[0042]综上所述，虽然本发明结合其具体实施例而被描述，应该理解的是，许多替代、修改及变化对于那些本领域的技术人员将是显而易见的。因此，其意在包含落入所附权利要求书的范围内的所有替代、修改及变化。');
INSERT INTO `os_patent_instruction_text` VALUES (10644, 23698, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种背光源的制作方法。\n\n背景技术\n\n[0002]随着显示技术的发展，液晶显示器(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]现有市场上的液晶显示装置大部分为背光型液晶显示装置，其包括液晶显示面板及背光模组(backlight module)。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，两片玻璃基板中间有许多垂直和水平的细小电线，通过通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。\n\n[0004]由于液晶显示面板本身不发光，需要借由背光模组提供的光源来正常显示影像，因此，背光模组成为液晶显示装置的关键组件之一。背光模组依照光源入射位置的不同分成侧入式背光模组与直下式背光模组两种。直下式背光模组是将背光源例如阴极萤光灯管(Cold Cathode Fluorescent Lamp，CCFL)或发光二极管(Light Emitting Diode，LED)光源设置在液晶显示面板后方，光线经扩散板均匀化后形成面光源提供给液晶显示面板。\n\n[0005]Mini-LED又称为次毫米发光二极管，将其应用之背光模组中，相比于常规的侧入式背光，无需设置导光板，显得更加轻薄，发光效率也更高，同时解决了混光距离的限制，不会产生侧发光背光的热点(hotspot)的现象，适合用于窄边框全面屏产品上。同时Mini-LED还可以进行背光的分区控制，实现近乎完美的暗态表现，对比度也更高，显示画质也更好。\n\n[0006]然而，Mini-LED在制备工艺中也存在诸多的缺陷有待解决，其中之一就是芯片的固晶问题。由于成本的原因，人们更青睐于使用更小颗的芯片进行固晶，然而，传统的芯片固晶回流焊过程中由于锡膏的熔融流动时间较长，且芯片的重量轻，易造成锡膏的拉扯偏移，从而造成Mini-LED整面的亮度不均现象，影响光效。\n\n发明内容\n\n[0007]本发明的目的在于提供一种背光源的制作方法，工艺效率高，工艺成本低，有效保证了背光源的光效。\n\n[0008]为实现上述目的，本发明提供一种背光源的制作方法，包括如下步骤：\n\n[0009]步骤S1、提供基板；\n\n[0010]步骤S2、在所述基板上形成间隔的多个焊锡图案组；每一焊锡图案组包括间隔的多个焊锡图案；每一焊锡图案呈封闭的环状；\n\n[0011]步骤S3、提供多个Mini-LED；将多个Mini-LED对应设于多个焊锡图案组上；\n\n[0012]步骤S4、将完成步骤S3后的基板放入具有变化磁场的空间，使得多个焊锡图案组中的焊锡图案产生感应电流而发热熔化，将多个Mini-LED焊接在基板上。\n\n[0013]所述基板包括间隔的多个焊盘组，每一焊盘组包括间隔的两个焊盘；\n\n[0014]所述步骤S2形成的多个焊锡图案组分别与多个焊盘组对应；每一焊锡图案组包括两个焊锡图案；每一焊锡图案组的两个焊锡图案分别形成于对应的焊盘组的两个焊盘上；\n\n[0015]所述Mini-LED包括分别与对应的焊锡图案组的两个焊锡图案相对应的两个引脚；所述步骤S3完成后，每一引脚位于对应的焊锡图案上或位于对应的焊锡图案围成的区域内；\n\n[0016]所述步骤S4中，每一焊锡图案组的两个焊锡图案熔化将对应的Mini-LED的两个引脚分别与对应的焊盘组的两个焊盘焊接。\n\n[0017]所述步骤S2在基板上形成焊锡图案组之前还在基板上形成分别与多个焊盘组对应的多个助焊剂图案组；每一助焊剂图案组包括间隔的两个助焊剂图案；每一助焊剂图案组的两个助焊剂图案分别形成在对应的焊盘组的两个焊盘上；每一焊锡图案组的两个焊锡图案分别形成于对应的焊盘组的两个焊盘上的助焊剂图案上。\n\n[0018]所述助焊剂图案的面积为其下方的焊盘的面积的0.8-1倍。\n\n[0019]在所述基板上形成间隔的多个焊锡图案组的具体方式为：首先提供一焊锡钢网，所述焊锡钢网包括第一遮挡部、多个第二遮挡部及分别与多个第二遮挡部对应的多个连接部，所述第一遮挡部设有间隔的多个开口，多个第二遮挡部对应位于多个开口内并通过对应的连接部与第一遮挡部连接；接着，利用所述焊锡钢网为遮挡向基板喷涂焊锡材料，在基板上形成间隔的多个焊锡图案组，每一焊锡图案组包括多个呈封闭的环状的焊锡图案。\n\n[0020]所述多个助焊剂图案组通过钢网喷涂的方式制作。\n\n[0021]所述助焊剂图案的厚度为1-5μm。\n\n[0022]所述焊锡图案为圆形环或多边形环；所述焊锡图案的厚度为20-50μm。\n\n[0023]所述步骤S4中，将完成步骤S3后的基板放入具有变化磁场的空间的磁通量变化率为5×10-4-2×10-3Wb/s，多个焊锡图案组中的焊锡图案产生感应电流而发热的温度为240℃-280℃。\n\n[0024]所述基板为印刷电路板或柔性电路板。\n\n[0025]本发明的有益效果：本发明提供的一种背光源的制作方法在基板上形成多个焊锡图案组，每一焊锡图案组包括间隔的多个焊锡图案，焊锡图案呈封闭的环状，将多个Mini-LED对应设于多个焊锡图案组上，将基板放入具有变化磁场的空间，多个焊锡图案组中的焊锡图案的回路产生感应电流而迅速产热熔化，将多个Mini-LED焊接在基板上，提升焊接速度，工艺效率高，工艺成本低，且有效保证了背光源的光效。\n\n附图说明\n\n[0026]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0027]附图中，\n\n[0028]图1为本发明的背光源的制作方法的流程图；\n\n[0029]图2为本发明的背光源的制作方法的步骤S1的示意图；\n\n[0030]图3及图4为本发明的背光源的制作方法的步骤S2的示意图；\n\n[0031]图5为本发明的背光源的制作方法的第一实施例中焊锡图案的俯视示意图；\n\n[0032]图6为本发明的背光源的制作方法的第二实施例中焊锡图案的俯视示意图；\n\n[0033]图7为本发明的背光源的制作方法的第三实施例中焊锡图案的俯视示意图；\n\n[0034]图8为本发明的背光源的制作方法的第四实施例中焊锡图案的俯视示意图；\n\n[0035]图9为本发明的背光源的制作方法的第五实施例中焊锡图案的俯视示意图；\n\n[0036]图10为本发明的背光源的制作方法的第一实施例中焊锡钢网的局部结构示意图；\n\n[0037]图11为本发明的背光源的制作方法的步骤S3的示意图；\n\n[0038]图12为本发明的背光源的制作方法的步骤S4的示意图。\n\n具体实施方式\n\n[0039]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0040]请参阅图1，本发明提供一种背光源的制作方法，包括如下步骤：\n\n[0041]步骤S1、请参阅图2，提供基板10。\n\n[0042]具体地，所述基板10包括间隔的多个焊盘组11，每一焊盘组11包括间隔的两个焊盘111。\n\n[0043]进一步地，所述基板10还包括分别与多个焊盘111连接的铜线及用于进行反光的白油(未图示)。\n\n[0044]具体地，所述基板10为以硬质塑料为衬底的印刷电路板(PCB)或以聚酰亚胺材料为衬底的柔性电路板(FPC)。\n\n[0045]具体地，所述步骤S1在提供了基板10之后还对所述基板10进行清洗。\n\n[0046]步骤S2、请参阅图4，在所述基板10上形成间隔的多个焊锡图案组20。每一焊锡图案组20包括间隔的多个焊锡图案21。每一焊锡图案21呈封闭的环状。\n\n[0047]具体地，所述步骤S2形成的多个焊锡图案组20分别与多个焊盘组11对应。每一焊锡图案组20包括两个焊锡图案21。每一焊锡图案组20的两个焊锡图案21分别形成于对应的焊盘组11的两个焊盘111上。\n\n[0048]具体地，请参阅图5至图9，所述焊锡图案21可以为圆形环，也可以为正方形环、菱形环、三角形环、六边形环以及其他边数的多边形环，只需要保证焊锡图案21能够成封闭的环状即可。\n\n[0049]优选地，所述焊锡图案21的厚度为20-50μm。\n\n[0050]具体地，所述多个焊锡图案组20通过钢网喷涂的方式形成在基板10上。\n\n[0051]进一步地，请参考图10，以本发明的第一实施例为例，在所述基板10上形成间隔的多个焊锡图案组20的具体方式为：首先提供一焊锡钢网90，所述焊锡钢网90包括第一遮挡部91、多个圆形的第二遮挡部92及分别与多个第二遮挡部92对应的多个连接部93，所述第一遮挡部91设有间隔的多个圆形的开口911，多个第二遮挡部92对应位于多个开口911内并通过对应的连接部93与第一遮挡部91连接。接着，利用所述焊锡钢网90为遮挡向基板10喷涂焊锡材料，在基板10上形成间隔的多个焊锡图案组20，每一焊锡图案组20包括多个呈封闭的圆形环状的焊锡图案21。可以理解的是，在本发明的其他实施例中，可以通过将第二遮挡部92的形状及开口911的形状设置为如三角形、正方形、菱形、六边形的多边形，以使得最终形成的焊锡图案21呈封闭的多边形环。\n\n[0052]具体地，请参阅图3及图4，所述步骤S2在基板10上形成焊锡图案组20之前还在基板10上形成分别与多个焊盘组11对应的多个助焊剂图案组40。每一助焊剂图案组40包括间隔的两个助焊剂图案41。每一助焊剂图案组40的两个助焊剂图案41分别形成在对应的焊盘组11的两个焊盘111上。每一焊锡图案组20的两个焊锡图案21分别形成于对应的焊盘组11的两个焊盘111上的助焊剂图案41上。\n\n[0053]优选地，所述助焊剂图案41的面积为其下方的焊盘111的面积的0.8-1倍。所述助焊剂图案41的厚度为1-5μm。\n\n[0054]具体地，所述多个助焊剂图案组40通过钢网喷涂的方式制作。\n\n[0055]步骤S3、请参阅图11，提供多个Mini-LED30。将多个Mini-LED30对应设于多个焊锡图案组20上。\n\n[0056]具体地，所述Mini-LED30包括分别与对应的焊锡图案组20的两个焊锡图案21相对应的两个引脚31。所述步骤S3完成后，每一引脚31位于对应的焊锡图案21上或位于对应的焊锡图案21围成的区域内。\n\n[0057]步骤S4、请参阅图12，将完成步骤S3后的基板10放入具有变化磁场的空间，通过磁场的不断变化使得多个焊锡图案组20中的焊锡图案21产生感应电流，感应电流在焊锡图案21的闭合回路中产生热量，使得多个焊锡图案21发热熔化而迅速由周边向中心进行摊平，同时，助焊剂图案41会受热挥发，最终使得熔化后的焊锡图案21将多个Mini-LED30焊接在基板10上。\n\n[0058]具体地，所述步骤S4中，每一焊锡图案组20的两个焊锡图案21熔化将对应的Mini-LED30的两个引脚31分别与对应的焊盘组11的两个焊盘111焊接。\n\n[0059]优选地，所述步骤S4中，将完成步骤S3后的基板10放入具有变化磁场的空间的磁通量变化率为5×10-4-2×10-3Wb/s，使得多个焊锡图案组20中的焊锡图案21产生感应电流而发热的温度为240℃-280℃。\n\n[0060]需要说明的是，本发明通过在基板10上形成包括呈封闭的环状的焊锡图案21的焊锡图案组20，在将多个Mini-LED30对应设于多个焊锡图案组20上在基板10上之后，通过将基板10放入具有变化磁场的空间内，利用感应电流使得多个焊锡图案21发热而迅速熔化摊平，不会出现现有焊接工艺中“山丘状”形貌的焊锡，能够迅速将Mini-LED30焊接在基板10上，焊接速度快，工艺效率高，并且焊锡快速冷却不会造成Mini-LED30过分拉扯倾斜，保证了背光源的光效，同时采用感应电流焊接的方式能够达到节省能耗的目的，降低背光源的生产成本，另外，由于感应电流仅存在于焊锡图案21的闭合回路中，基板10上其他区域，例如铜线区、白油区，不会受到高温的影响，保证了板材不会存在严重的胀缩卷曲，且白油的反射率不会受到高温焊接工艺的影响而降低，保证较好的光效及混光效果，提升背光源的品质。\n\n[0061]综上所述，本发明的背光源的制作方法在基板上形成多个焊锡图案组，每一焊锡图案组包括间隔的多个焊锡图案，焊锡图案呈封闭的环状，将多个Mini-LED对应设于多个焊锡图案组上，将基板放入具有变化磁场的空间，多个焊锡图案组中的焊锡图案的回路产生感应电流而迅速产热熔化，将多个Mini-LED焊接在基板上，提升焊接速度，工艺效率高，工艺成本低，且有效保证了背光源的光效。\n\n[0062]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种背光源的制作方法。\n\n背景技术\n\n[0002]随着显示技术的发展，液晶显示器(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]现有市场上的液晶显示装置大部分为背光型液晶显示装置，其包括液晶显示面板及背光模组(backlight module)。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，两片玻璃基板中间有许多垂直和水平的细小电线，通过通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。\n\n[0004]由于液晶显示面板本身不发光，需要借由背光模组提供的光源来正常显示影像，因此，背光模组成为液晶显示装置的关键组件之一。背光模组依照光源入射位置的不同分成侧入式背光模组与直下式背光模组两种。直下式背光模组是将背光源例如阴极萤光灯管(Cold Cathode Fluorescent Lamp，CCFL)或发光二极管(Light Emitting Diode，LED)光源设置在液晶显示面板后方，光线经扩散板均匀化后形成面光源提供给液晶显示面板。\n\n[0005]Mini-LED又称为次毫米发光二极管，将其应用之背光模组中，相比于常规的侧入式背光，无需设置导光板，显得更加轻薄，发光效率也更高，同时解决了混光距离的限制，不会产生侧发光背光的热点(hotspot)的现象，适合用于窄边框全面屏产品上。同时Mini-LED还可以进行背光的分区控制，实现近乎完美的暗态表现，对比度也更高，显示画质也更好。\n\n[0006]然而，Mini-LED在制备工艺中也存在诸多的缺陷有待解决，其中之一就是芯片的固晶问题。由于成本的原因，人们更青睐于使用更小颗的芯片进行固晶，然而，传统的芯片固晶回流焊过程中由于锡膏的熔融流动时间较长，且芯片的重量轻，易造成锡膏的拉扯偏移，从而造成Mini-LED整面的亮度不均现象，影响光效。\n\n发明内容\n\n[0007]本发明的目的在于提供一种背光源的制作方法，工艺效率高，工艺成本低，有效保证了背光源的光效。\n\n[0008]为实现上述目的，本发明提供一种背光源的制作方法，包括如下步骤：\n\n[0009]步骤S1、提供基板；\n\n[0010]步骤S2、在所述基板上形成间隔的多个焊锡图案组；每一焊锡图案组包括间隔的多个焊锡图案；每一焊锡图案呈封闭的环状；\n\n[0011]步骤S3、提供多个Mini-LED；将多个Mini-LED对应设于多个焊锡图案组上；\n\n[0012]步骤S4、将完成步骤S3后的基板放入具有变化磁场的空间，使得多个焊锡图案组中的焊锡图案产生感应电流而发热熔化，将多个Mini-LED焊接在基板上。\n\n[0013]所述基板包括间隔的多个焊盘组，每一焊盘组包括间隔的两个焊盘；\n\n[0014]所述步骤S2形成的多个焊锡图案组分别与多个焊盘组对应；每一焊锡图案组包括两个焊锡图案；每一焊锡图案组的两个焊锡图案分别形成于对应的焊盘组的两个焊盘上；\n\n[0015]所述Mini-LED包括分别与对应的焊锡图案组的两个焊锡图案相对应的两个引脚；所述步骤S3完成后，每一引脚位于对应的焊锡图案上或位于对应的焊锡图案围成的区域内；\n\n[0016]所述步骤S4中，每一焊锡图案组的两个焊锡图案熔化将对应的Mini-LED的两个引脚分别与对应的焊盘组的两个焊盘焊接。\n\n[0017]所述步骤S2在基板上形成焊锡图案组之前还在基板上形成分别与多个焊盘组对应的多个助焊剂图案组；每一助焊剂图案组包括间隔的两个助焊剂图案；每一助焊剂图案组的两个助焊剂图案分别形成在对应的焊盘组的两个焊盘上；每一焊锡图案组的两个焊锡图案分别形成于对应的焊盘组的两个焊盘上的助焊剂图案上。\n\n[0018]所述助焊剂图案的面积为其下方的焊盘的面积的0.8-1倍。\n\n[0019]在所述基板上形成间隔的多个焊锡图案组的具体方式为：首先提供一焊锡钢网，所述焊锡钢网包括第一遮挡部、多个第二遮挡部及分别与多个第二遮挡部对应的多个连接部，所述第一遮挡部设有间隔的多个开口，多个第二遮挡部对应位于多个开口内并通过对应的连接部与第一遮挡部连接；接着，利用所述焊锡钢网为遮挡向基板喷涂焊锡材料，在基板上形成间隔的多个焊锡图案组，每一焊锡图案组包括多个呈封闭的环状的焊锡图案。\n\n[0020]所述多个助焊剂图案组通过钢网喷涂的方式制作。\n\n[0021]所述助焊剂图案的厚度为1-5μm。\n\n[0022]所述焊锡图案为圆形环或多边形环；所述焊锡图案的厚度为20-50μm。\n\n[0023]所述步骤S4中，将完成步骤S3后的基板放入具有变化磁场的空间的磁通量变化率为5×10-4-2×10-3Wb/s，多个焊锡图案组中的焊锡图案产生感应电流而发热的温度为240℃-280℃。\n\n[0024]所述基板为印刷电路板或柔性电路板。\n\n[0025]本发明的有益效果：本发明提供的一种背光源的制作方法在基板上形成多个焊锡图案组，每一焊锡图案组包括间隔的多个焊锡图案，焊锡图案呈封闭的环状，将多个Mini-LED对应设于多个焊锡图案组上，将基板放入具有变化磁场的空间，多个焊锡图案组中的焊锡图案的回路产生感应电流而迅速产热熔化，将多个Mini-LED焊接在基板上，提升焊接速度，工艺效率高，工艺成本低，且有效保证了背光源的光效。\n\n附图说明\n\n[0026]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0027]附图中，\n\n[0028]图1为本发明的背光源的制作方法的流程图；\n\n[0029]图2为本发明的背光源的制作方法的步骤S1的示意图；\n\n[0030]图3及图4为本发明的背光源的制作方法的步骤S2的示意图；\n\n[0031]图5为本发明的背光源的制作方法的第一实施例中焊锡图案的俯视示意图；\n\n[0032]图6为本发明的背光源的制作方法的第二实施例中焊锡图案的俯视示意图；\n\n[0033]图7为本发明的背光源的制作方法的第三实施例中焊锡图案的俯视示意图；\n\n[0034]图8为本发明的背光源的制作方法的第四实施例中焊锡图案的俯视示意图；\n\n[0035]图9为本发明的背光源的制作方法的第五实施例中焊锡图案的俯视示意图；\n\n[0036]图10为本发明的背光源的制作方法的第一实施例中焊锡钢网的局部结构示意图；\n\n[0037]图11为本发明的背光源的制作方法的步骤S3的示意图；\n\n[0038]图12为本发明的背光源的制作方法的步骤S4的示意图。\n\n具体实施方式\n\n[0039]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0040]请参阅图1，本发明提供一种背光源的制作方法，包括如下步骤：\n\n[0041]步骤S1、请参阅图2，提供基板10。\n\n[0042]具体地，所述基板10包括间隔的多个焊盘组11，每一焊盘组11包括间隔的两个焊盘111。\n\n[0043]进一步地，所述基板10还包括分别与多个焊盘111连接的铜线及用于进行反光的白油(未图示)。\n\n[0044]具体地，所述基板10为以硬质塑料为衬底的印刷电路板(PCB)或以聚酰亚胺材料为衬底的柔性电路板(FPC)。\n\n[0045]具体地，所述步骤S1在提供了基板10之后还对所述基板10进行清洗。\n\n[0046]步骤S2、请参阅图4，在所述基板10上形成间隔的多个焊锡图案组20。每一焊锡图案组20包括间隔的多个焊锡图案21。每一焊锡图案21呈封闭的环状。\n\n[0047]具体地，所述步骤S2形成的多个焊锡图案组20分别与多个焊盘组11对应。每一焊锡图案组20包括两个焊锡图案21。每一焊锡图案组20的两个焊锡图案21分别形成于对应的焊盘组11的两个焊盘111上。\n\n[0048]具体地，请参阅图5至图9，所述焊锡图案21可以为圆形环，也可以为正方形环、菱形环、三角形环、六边形环以及其他边数的多边形环，只需要保证焊锡图案21能够成封闭的环状即可。\n\n[0049]优选地，所述焊锡图案21的厚度为20-50μm。\n\n[0050]具体地，所述多个焊锡图案组20通过钢网喷涂的方式形成在基板10上。\n\n[0051]进一步地，请参考图10，以本发明的第一实施例为例，在所述基板10上形成间隔的多个焊锡图案组20的具体方式为：首先提供一焊锡钢网90，所述焊锡钢网90包括第一遮挡部91、多个圆形的第二遮挡部92及分别与多个第二遮挡部92对应的多个连接部93，所述第一遮挡部91设有间隔的多个圆形的开口911，多个第二遮挡部92对应位于多个开口911内并通过对应的连接部93与第一遮挡部91连接。接着，利用所述焊锡钢网90为遮挡向基板10喷涂焊锡材料，在基板10上形成间隔的多个焊锡图案组20，每一焊锡图案组20包括多个呈封闭的圆形环状的焊锡图案21。可以理解的是，在本发明的其他实施例中，可以通过将第二遮挡部92的形状及开口911的形状设置为如三角形、正方形、菱形、六边形的多边形，以使得最终形成的焊锡图案21呈封闭的多边形环。\n\n[0052]具体地，请参阅图3及图4，所述步骤S2在基板10上形成焊锡图案组20之前还在基板10上形成分别与多个焊盘组11对应的多个助焊剂图案组40。每一助焊剂图案组40包括间隔的两个助焊剂图案41。每一助焊剂图案组40的两个助焊剂图案41分别形成在对应的焊盘组11的两个焊盘111上。每一焊锡图案组20的两个焊锡图案21分别形成于对应的焊盘组11的两个焊盘111上的助焊剂图案41上。\n\n[0053]优选地，所述助焊剂图案41的面积为其下方的焊盘111的面积的0.8-1倍。所述助焊剂图案41的厚度为1-5μm。\n\n[0054]具体地，所述多个助焊剂图案组40通过钢网喷涂的方式制作。\n\n[0055]步骤S3、请参阅图11，提供多个Mini-LED30。将多个Mini-LED30对应设于多个焊锡图案组20上。\n\n[0056]具体地，所述Mini-LED30包括分别与对应的焊锡图案组20的两个焊锡图案21相对应的两个引脚31。所述步骤S3完成后，每一引脚31位于对应的焊锡图案21上或位于对应的焊锡图案21围成的区域内。\n\n[0057]步骤S4、请参阅图12，将完成步骤S3后的基板10放入具有变化磁场的空间，通过磁场的不断变化使得多个焊锡图案组20中的焊锡图案21产生感应电流，感应电流在焊锡图案21的闭合回路中产生热量，使得多个焊锡图案21发热熔化而迅速由周边向中心进行摊平，同时，助焊剂图案41会受热挥发，最终使得熔化后的焊锡图案21将多个Mini-LED30焊接在基板10上。\n\n[0058]具体地，所述步骤S4中，每一焊锡图案组20的两个焊锡图案21熔化将对应的Mini-LED30的两个引脚31分别与对应的焊盘组11的两个焊盘111焊接。\n\n[0059]优选地，所述步骤S4中，将完成步骤S3后的基板10放入具有变化磁场的空间的磁通量变化率为5×10-4-2×10-3Wb/s，使得多个焊锡图案组20中的焊锡图案21产生感应电流而发热的温度为240℃-280℃。\n\n[0060]需要说明的是，本发明通过在基板10上形成包括呈封闭的环状的焊锡图案21的焊锡图案组20，在将多个Mini-LED30对应设于多个焊锡图案组20上在基板10上之后，通过将基板10放入具有变化磁场的空间内，利用感应电流使得多个焊锡图案21发热而迅速熔化摊平，不会出现现有焊接工艺中“山丘状”形貌的焊锡，能够迅速将Mini-LED30焊接在基板10上，焊接速度快，工艺效率高，并且焊锡快速冷却不会造成Mini-LED30过分拉扯倾斜，保证了背光源的光效，同时采用感应电流焊接的方式能够达到节省能耗的目的，降低背光源的生产成本，另外，由于感应电流仅存在于焊锡图案21的闭合回路中，基板10上其他区域，例如铜线区、白油区，不会受到高温的影响，保证了板材不会存在严重的胀缩卷曲，且白油的反射率不会受到高温焊接工艺的影响而降低，保证较好的光效及混光效果，提升背光源的品质。\n\n[0061]综上所述，本发明的背光源的制作方法在基板上形成多个焊锡图案组，每一焊锡图案组包括间隔的多个焊锡图案，焊锡图案呈封闭的环状，将多个Mini-LED对应设于多个焊锡图案组上，将基板放入具有变化磁场的空间，多个焊锡图案组中的焊锡图案的回路产生感应电流而迅速产热熔化，将多个Mini-LED焊接在基板上，提升焊接速度，工艺效率高，工艺成本低，且有效保证了背光源的光效。\n\n[0062]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10645, 23699, '技术领域\n\n[0001]本发明涉及显示装置领域，尤其涉及一种背光模组及采用该背光模组的显示装置。\n\n背景技术\n\n[0002]HDR(High Dynamic Range)已成为高阶显示的标配，TFT-LCD显示技术在色域、对比度、亮度等指标不断提升，以此来抗衡OLED显示技术。但TFT-LCD技术中高色域一般会牺牲亮度，且静态对比度也陷入瓶颈。因此侧入式背光搭配TFT-LCD性能已很难提升。\n\n[0003]为了满足高色域，各厂商已在开发QD-BL、QD-CF等技术。为了提升对比度，采用了直下式面光源分区技术，将背光源划分为多区域独立控制单元，即将背光源划分为多个Mini-LED，根据每一帧图像的亮、暗分布精确的调整对应背光区域的亮度，提高动态对比度，显著提升画面显示质量。\n\n[0004]但该结构的缺点在于，Mini-LED存在LED灯影遮蔽不佳的问题。目前解决LED灯影通常有三种方法：1、增加LED颗数，但会增加成本；2、采用高雾度的扩散板遮蔽，但会牺牲穿透率；2、增加LED和膜片之间的间隙(air Gap)，但膜材支撑难度加大，会增加模组整体厚度，且不适用于窄边框产品，产品整体抗震性能差。\n\n发明内容\n\n[0005]本发明所要解决的技术问题是，提供一种背光模组及采用该背光模组的显示装置，其能够有效地优化LED灯影，提升Mini-LED整体显示效果。\n\n[0006]为了解决上述问题，本发明提供了一种背光模组，包括多个LED发光芯片及一量子点膜，所述量子点膜设置在所述LED发光芯片的出光侧，在所述LED发光芯片的出光侧还设置有多个扩散块，所述扩散块与所述LED芯片一一对应。\n\n[0007]在一实施例中，所述扩散块设置在所述量子点膜朝向所述LED发光芯片的一侧。\n\n[0008]在一实施例中，所述扩散块的宽度满足如下公式：W＝2*H*tan(1/2*α)，其中，W是所述扩散块的宽度，H是所述LED发光芯片至所述量子点膜的距离，α是所述LED发光芯片的光型角度。\n\n[0009]在一实施例中，所述扩散块设置在所述量子点膜背离所述LED发光芯片的一侧。\n\n[0010]在一实施例中，所述扩散块的宽度满足如下公式：W＝2*(H+H1)*tan(1/2*α)，其中，W是所述扩散块的宽度，H是所述LED发光芯片至所述量子点膜的距离，H1是所述量子点膜的厚度，α是所述LED发光芯片的光型角度。\n\n[0011]在一实施例中，所述扩散块内部具有多个粒子，所述粒子的粒径大于15微米。\n\n[0012]在一实施例中，所述扩散块的雾度大于80％。\n\n[0013]在一实施例中，所述LED发光芯片的宽度小于所述扩散块的宽度。\n\n[0014]在一实施例中，所述背光模组还包括至少一扩散膜，所述扩散膜设置在所述量子点膜背离所述LED发光芯片的一侧。\n\n[0015]本发明一种显示装置，其特征在于，包括一如权利要求1所述的背光模组及一设置在所述背光模组上的LCD显示面板。\n\n[0016]本发明的优点在于，每一个LED发光芯片对应一个扩散块，使得每一个所述LED发光芯片发射的光被进一步扩散，则相邻的两个所述LED发光芯片之间的间隙被扩散光补充，从而能够有效地优化LED灯影，提升Mini-LED整体显示效果；本发明背光模组在尽量不增加模组厚度，减少模组功耗损失的前提下，优化Mini-LED灯影问题；且在相同厚度下，可实现LED减灯设计，降低中、大尺寸Mini-LED模组成本。\n\n附图说明\n\n[0017]图1是本发明背光模组的第一实施例的爆炸结构示意；\n\n[0018]图2是本发明背光模组的第一实施例的局部结构示意图；\n\n[0019]图3是本发明背光模组的第二实施例的局部结构示意图；\n\n[0020]图4是本发明显示面板的结构示意图。\n\n具体实施方式\n\n[0021]下面结合附图对本发明提供的背光模组及采用该背光模组的显示装置的具体实施方式做详细说明。\n\n[0022]图1是本发明背光模组的第一实施例的爆炸结构示意，图2是本发明背光模组的第一实施例的局部结构示意图。请参阅图1及图2，本发明背光模组包括多个LED发光芯片10及一量子点膜11。\n\n[0023]所述LED发光芯片10包括但不限于蓝光芯片，其作为所述背光模组的光源使用。多个所述LED发光芯片10呈矩阵排布，其中，所述LED发光芯片10的尺寸及数量可根据设计需求进行选择。其中，多个所述LED发光芯片10可设置在一光源电路板14上。\n\n[0024]所述量子点膜11设置在所述LED发光芯片10的出光侧。具体的说，在所述OLED发光芯片10的出光侧，在所述量子点膜11笼罩全部的所述OLED发光芯片10，且所述量子点膜11与所述OLED发光芯片10之间具有一距离。所述量子点膜11用于将所述LkED发光芯片发出的光转换成白光。在本实施例中，所述所述LED发光芯片10为蓝光芯片，则在所述LED发光芯片10发射的光照射在量子点膜11后再出射，其出射的光为白光。其中，所述量子点膜11的结构为背光模组的常规结构，不再赘述。\n\n[0025]在所述LED发光芯片10的出光侧还设置有多个扩散块12，所述扩散块12与所述623芯片10一一对应。具体的说，一个所述LED芯片10对应一个扩散块12。所述扩散块12用于将所述LED发光芯片10发射的光扩散。本发明背光模组的优点在于，每一个所述LED发光芯片10对应一个扩散块12，使得每一个所述LED发光芯片10发射的光被进一步扩散，则相邻的两个所述LED发光芯片10之间的光间隙被扩散光补充，从而能够有效地优化LED灯影，提升Mini-LED整体显示效果，其基本不增加Mini-LED整体模组的厚度，实现产品轻薄化。\n\n[0026]在第一实施例中，所述扩散块12设置在所述量子点膜11朝向所述LED发光芯片10的一侧。具体的说，所述扩散块12设置在所述量子点膜11的表面，该表面朝向所述LED发光芯片10。为了进一步加强所述扩散块12的扩散效果，在本实施例中，所述扩散块12的宽度满足一定条件。具体的说，在本实施例中，请参阅图2，所述扩散块12的宽度满足如下公式：\n\n[0027]W＝2*H*tan(1/2*α)\n\n[0028]其中，W是所述扩散块12的宽度，H是所述LED发光芯片10至所述量子点膜11的距离，α是所述LED发光芯片10的光型角度。\n\n[0029]为了进一步使所述LED发光芯片10发射的光扩散，所述扩散块12内部具有多个粒子，所述粒子的粒径大于15微米，以提高所述LED发光芯片10发射的光的扩散效果。所述粒子包括但不限于树脂颗粒。其中，所述扩散块12可采用常规的方法制备。举例说明制备所述扩散块12的方法：a、在溶剂中加入微颗粒，搅拌至微粒子均匀分散到溶剂中为止；b、在a步骤的混合物中加入涂布树脂及固化剂，充分搅拌；c、提供一涂布掩膜，其含有与Mini-LED间距相对应的网孔，铺上涂布掩膜，将b步骤的混合物均匀的涂布在量子点层上，形成所述扩散块。\n\n[0030]可选地，所述扩散块12的雾度大于80％，以进一步提高所述扩散块12的扩散作用。进一步，所述LED发光芯片10的宽度小于所述扩散块12的宽度，以保证所述LED发光芯片10发射的光被扩散至两个所述LED发光芯片10的交界处。\n\n[0031]进一步，所述背光模组还包括至少一扩散膜13。所述扩散膜13设置在所述量子点膜11背离所述LED发光芯片10的一侧。具体的说，在本实施例中，在所述量子点膜11背离所述LED发光芯片10的一侧设置有两个扩散膜13。本发明背光模组的其他实施例中，在所述量子点膜11背离所述LED发光芯片10的一侧也可以设置其他光学元件，以改善背光模组的发光性能。\n\n[0032]图3是本发明背光模组的第二实施例的局部结构示意图。请参阅图3，本发明第二实施例与第一实施例的区别在于所述扩散块设置的位置及尺寸不同。具体的说，在第二实施例中，所述扩散块12设置在所述量子点膜11背离所述LED发光芯片10的一侧，即所述扩散块12设置在所述量子点膜11的一表面，该表面背离所述LED发光芯片10，也就是说，在所述扩散块12与所述LED发光芯片10之间设置有所述量子点膜11，且所述量子点膜11至所述LED发光芯片10具有一距离，而所述扩散块12则设置在所述量子点膜11的表面。为了进一步加强所述扩散块12的扩散效果，在本实施例中，所述扩散块12的宽度满足一定条件。具体的说，在本实施例中，请参阅图3，所述扩散块12的宽度满足如下公式：\n\n[0033]W＝2*(H+H1)*tan(1/2*α)\n\n[0034]其中，W是所述扩散块的宽度，H是所述LED发光芯片至所述量子点膜的距离，H1是所述量子点膜的厚度，α是所述LED发光芯片的光型角度。\n\n[0035]本发明还提供一种显示装置。图4是本发明显示面板的结构示意图。请参阅图4，本发明显示面板其包括一背光模组100及一设置在所述背光模组100上的LCD显示面板200。所述背光模组100的结构与上述的背光模组的结构相同，所述背光模组100为所述LCD显示面板200提供背光源。\n\n[0036]本发明显示装置的优点在于，背光模组100的相邻的两个所述LED发光芯片之间的光间隙被扩散光补充，从而能够有效地优化LED灯影，提升显示装置整体显示效果，且基本不增加显示装置的厚度，在提升显示装置整体显示效果的同时还能够不影响产品的厚度。\n\n[0037]以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。', '技术领域\n\n[0001]本发明涉及显示装置领域，尤其涉及一种背光模组及采用该背光模组的显示装置。\n\n背景技术\n\n[0002]HDR(High Dynamic Range)已成为高阶显示的标配，TFT-LCD显示技术在色域、对比度、亮度等指标不断提升，以此来抗衡OLED显示技术。但TFT-LCD技术中高色域一般会牺牲亮度，且静态对比度也陷入瓶颈。因此侧入式背光搭配TFT-LCD性能已很难提升。\n\n[0003]为了满足高色域，各厂商已在开发QD-BL、QD-CF等技术。为了提升对比度，采用了直下式面光源分区技术，将背光源划分为多区域独立控制单元，即将背光源划分为多个Mini-LED，根据每一帧图像的亮、暗分布精确的调整对应背光区域的亮度，提高动态对比度，显著提升画面显示质量。\n\n[0004]但该结构的缺点在于，Mini-LED存在LED灯影遮蔽不佳的问题。目前解决LED灯影通常有三种方法：1、增加LED颗数，但会增加成本；2、采用高雾度的扩散板遮蔽，但会牺牲穿透率；2、增加LED和膜片之间的间隙(air Gap)，但膜材支撑难度加大，会增加模组整体厚度，且不适用于窄边框产品，产品整体抗震性能差。\n\n发明内容\n\n[0005]本发明所要解决的技术问题是，提供一种背光模组及采用该背光模组的显示装置，其能够有效地优化LED灯影，提升Mini-LED整体显示效果。\n\n[0006]为了解决上述问题，本发明提供了一种背光模组，包括多个LED发光芯片及一量子点膜，所述量子点膜设置在所述LED发光芯片的出光侧，在所述LED发光芯片的出光侧还设置有多个扩散块，所述扩散块与所述LED芯片一一对应。\n\n[0007]在一实施例中，所述扩散块设置在所述量子点膜朝向所述LED发光芯片的一侧。\n\n[0008]在一实施例中，所述扩散块的宽度满足如下公式：W＝2*H*tan(1/2*α)，其中，W是所述扩散块的宽度，H是所述LED发光芯片至所述量子点膜的距离，α是所述LED发光芯片的光型角度。\n\n[0009]在一实施例中，所述扩散块设置在所述量子点膜背离所述LED发光芯片的一侧。\n\n[0010]在一实施例中，所述扩散块的宽度满足如下公式：W＝2*(H+H1)*tan(1/2*α)，其中，W是所述扩散块的宽度，H是所述LED发光芯片至所述量子点膜的距离，H1是所述量子点膜的厚度，α是所述LED发光芯片的光型角度。\n\n[0011]在一实施例中，所述扩散块内部具有多个粒子，所述粒子的粒径大于15微米。\n\n[0012]在一实施例中，所述扩散块的雾度大于80％。\n\n[0013]在一实施例中，所述LED发光芯片的宽度小于所述扩散块的宽度。\n\n[0014]在一实施例中，所述背光模组还包括至少一扩散膜，所述扩散膜设置在所述量子点膜背离所述LED发光芯片的一侧。\n\n[0015]本发明一种显示装置，其特征在于，包括一如权利要求1所述的背光模组及一设置在所述背光模组上的LCD显示面板。\n\n[0016]本发明的优点在于，每一个LED发光芯片对应一个扩散块，使得每一个所述LED发光芯片发射的光被进一步扩散，则相邻的两个所述LED发光芯片之间的间隙被扩散光补充，从而能够有效地优化LED灯影，提升Mini-LED整体显示效果；本发明背光模组在尽量不增加模组厚度，减少模组功耗损失的前提下，优化Mini-LED灯影问题；且在相同厚度下，可实现LED减灯设计，降低中、大尺寸Mini-LED模组成本。\n\n附图说明\n\n[0017]图1是本发明背光模组的第一实施例的爆炸结构示意；\n\n[0018]图2是本发明背光模组的第一实施例的局部结构示意图；\n\n[0019]图3是本发明背光模组的第二实施例的局部结构示意图；\n\n[0020]图4是本发明显示面板的结构示意图。\n\n具体实施方式\n\n[0021]下面结合附图对本发明提供的背光模组及采用该背光模组的显示装置的具体实施方式做详细说明。\n\n[0022]图1是本发明背光模组的第一实施例的爆炸结构示意，图2是本发明背光模组的第一实施例的局部结构示意图。请参阅图1及图2，本发明背光模组包括多个LED发光芯片10及一量子点膜11。\n\n[0023]所述LED发光芯片10包括但不限于蓝光芯片，其作为所述背光模组的光源使用。多个所述LED发光芯片10呈矩阵排布，其中，所述LED发光芯片10的尺寸及数量可根据设计需求进行选择。其中，多个所述LED发光芯片10可设置在一光源电路板14上。\n\n[0024]所述量子点膜11设置在所述LED发光芯片10的出光侧。具体的说，在所述OLED发光芯片10的出光侧，在所述量子点膜11笼罩全部的所述OLED发光芯片10，且所述量子点膜11与所述OLED发光芯片10之间具有一距离。所述量子点膜11用于将所述LkED发光芯片发出的光转换成白光。在本实施例中，所述所述LED发光芯片10为蓝光芯片，则在所述LED发光芯片10发射的光照射在量子点膜11后再出射，其出射的光为白光。其中，所述量子点膜11的结构为背光模组的常规结构，不再赘述。\n\n[0025]在所述LED发光芯片10的出光侧还设置有多个扩散块12，所述扩散块12与所述623芯片10一一对应。具体的说，一个所述LED芯片10对应一个扩散块12。所述扩散块12用于将所述LED发光芯片10发射的光扩散。本发明背光模组的优点在于，每一个所述LED发光芯片10对应一个扩散块12，使得每一个所述LED发光芯片10发射的光被进一步扩散，则相邻的两个所述LED发光芯片10之间的光间隙被扩散光补充，从而能够有效地优化LED灯影，提升Mini-LED整体显示效果，其基本不增加Mini-LED整体模组的厚度，实现产品轻薄化。\n\n[0026]在第一实施例中，所述扩散块12设置在所述量子点膜11朝向所述LED发光芯片10的一侧。具体的说，所述扩散块12设置在所述量子点膜11的表面，该表面朝向所述LED发光芯片10。为了进一步加强所述扩散块12的扩散效果，在本实施例中，所述扩散块12的宽度满足一定条件。具体的说，在本实施例中，请参阅图2，所述扩散块12的宽度满足如下公式：\n\n[0027]W＝2*H*tan(1/2*α)\n\n[0028]其中，W是所述扩散块12的宽度，H是所述LED发光芯片10至所述量子点膜11的距离，α是所述LED发光芯片10的光型角度。\n\n[0029]为了进一步使所述LED发光芯片10发射的光扩散，所述扩散块12内部具有多个粒子，所述粒子的粒径大于15微米，以提高所述LED发光芯片10发射的光的扩散效果。所述粒子包括但不限于树脂颗粒。其中，所述扩散块12可采用常规的方法制备。举例说明制备所述扩散块12的方法：a、在溶剂中加入微颗粒，搅拌至微粒子均匀分散到溶剂中为止；b、在a步骤的混合物中加入涂布树脂及固化剂，充分搅拌；c、提供一涂布掩膜，其含有与Mini-LED间距相对应的网孔，铺上涂布掩膜，将b步骤的混合物均匀的涂布在量子点层上，形成所述扩散块。\n\n[0030]可选地，所述扩散块12的雾度大于80％，以进一步提高所述扩散块12的扩散作用。进一步，所述LED发光芯片10的宽度小于所述扩散块12的宽度，以保证所述LED发光芯片10发射的光被扩散至两个所述LED发光芯片10的交界处。\n\n[0031]进一步，所述背光模组还包括至少一扩散膜13。所述扩散膜13设置在所述量子点膜11背离所述LED发光芯片10的一侧。具体的说，在本实施例中，在所述量子点膜11背离所述LED发光芯片10的一侧设置有两个扩散膜13。本发明背光模组的其他实施例中，在所述量子点膜11背离所述LED发光芯片10的一侧也可以设置其他光学元件，以改善背光模组的发光性能。\n\n[0032]图3是本发明背光模组的第二实施例的局部结构示意图。请参阅图3，本发明第二实施例与第一实施例的区别在于所述扩散块设置的位置及尺寸不同。具体的说，在第二实施例中，所述扩散块12设置在所述量子点膜11背离所述LED发光芯片10的一侧，即所述扩散块12设置在所述量子点膜11的一表面，该表面背离所述LED发光芯片10，也就是说，在所述扩散块12与所述LED发光芯片10之间设置有所述量子点膜11，且所述量子点膜11至所述LED发光芯片10具有一距离，而所述扩散块12则设置在所述量子点膜11的表面。为了进一步加强所述扩散块12的扩散效果，在本实施例中，所述扩散块12的宽度满足一定条件。具体的说，在本实施例中，请参阅图3，所述扩散块12的宽度满足如下公式：\n\n[0033]W＝2*(H+H1)*tan(1/2*α)\n\n[0034]其中，W是所述扩散块的宽度，H是所述LED发光芯片至所述量子点膜的距离，H1是所述量子点膜的厚度，α是所述LED发光芯片的光型角度。\n\n[0035]本发明还提供一种显示装置。图4是本发明显示面板的结构示意图。请参阅图4，本发明显示面板其包括一背光模组100及一设置在所述背光模组100上的LCD显示面板200。所述背光模组100的结构与上述的背光模组的结构相同，所述背光模组100为所述LCD显示面板200提供背光源。\n\n[0036]本发明显示装置的优点在于，背光模组100的相邻的两个所述LED发光芯片之间的光间隙被扩散光补充，从而能够有效地优化LED灯影，提升显示装置整体显示效果，且基本不增加显示装置的厚度，在提升显示装置整体显示效果的同时还能够不影响产品的厚度。\n\n[0037]以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10646, 23700, '技术领域\n\n[0001]本申请涉及一种背光技术，特别涉及一种背光模组。\n\n背景技术\n\n[0002]市场Mini-LED在作为背光使用时，仍然将其类似于传统LED PKG，采用固晶方式固定于MCPCB板。\n\n[0003]由于LED尺寸和Pitch均很小，此时在PCB上采用传统结构固定连接器(connector)难以实现，通常需要采用双面PCB板11，即在正面打件LED 12和走线，在背面打件连接器13。具体结构如图1所示。同时由于现行Mini-LED绑定(bonding)限制，导致单块灯板尺寸有限。对于大尺寸机种，需求采用多灯板拼接方式实现。由于一个灯板设置有一个连接器13，此时连接器13连接需求，需将其外露在背板14之外。\n\n[0004]为保护外置的连接器需要整面型后盖15，背光模组1000无法实现真正薄型化效果。同时外置连接器13结构易在组装过程中损坏，且其多个连接器13和驱动板结构16的连接走线复杂化亦不利于背光模组1000组装。\n\n发明内容\n\n[0005]本申请实施例提供一种背光模组，以解决现有的背光模组对应大尺寸机种而言，需要采用多块灯板进行拼接，导致多个连接器外露于背板之外，从而需要整面形后盖罩设整个背光模组，且由于多个连接器的存在导致连接器和驱动板结构的连接复杂化的技术问题。\n\n[0006]本申请实施例提供一种背光模组，其包括至少一个灯板结构，每个所述灯板结构包括：\n\n[0007]至少两个第一PCB板，所述至少两个第一PCB板并排且拼接设置，每个所述第一PCB板包括第一子设置面和第二子设置面，第一子设置面和第二子设置面背向设置，所述第二子设置面上设置有第一走线，所有所述第二子设置面拼接形成一第二设置面；\n\n[0008]多个发光元件，设置在所述第一子设置面上，所述第一走线电性连接所述发光元件；\n\n[0009]一第二PCB板，设置在所述至少两个第一PCB板的下方，所述第二PCB板包括第三设置面和第四设置面，第三设置面和第四设置面背向设置，所述第三设置面面向所述第二设置面，所述第三设置面上设置有第二走线，所述第二走线和所述第一走线电性连接；以及\n\n[0010]一连接器，设置在所述第四设置面上，所述连接器电性连接于所述第二走线；\n\n[0011]其中所述第三设置面的面积大于所述第二子设置面的面积。\n\n[0012]在本申请的背光模组中，所述背光模组包括一驱动模块，所述驱动模块用于驱动所述发光元件发光，所述驱动模块电性连接于所述连接器。\n\n[0013]在本申请的背光模组中，所述背光模组包括至少两个所述灯板结构，至少两个所述灯板结构并排且拼接设置，每个所述灯板结构对应设置一个所述连接器，至少两个所述灯板结构拼接形成一灯板整体；\n\n[0014]其中，所有所述连接器并排设置在所述灯板整体靠近所述驱动模块的一侧。\n\n[0015]在本申请的背光模组中，所述背光模组包括一个所述灯板结构；\n\n[0016]其中，所述连接器设置在所述灯板结构靠近所述驱动模块的一侧。\n\n[0017]在本申请的背光模组中，所述背光模组包括一背板，所有的所述第四设置面拼接形成一所述灯板整体的设置面，所述背板设置在所述设置面上；\n\n[0018]所述背板上设置有多个开口，每个所述连接器对应设置在一个所述开口内，所述驱动模块设置在所述背板的一侧。\n\n[0019]在本申请的背光模组中，所述连接器通过连接线和所述驱动模块连接。\n\n[0020]在本申请的背光模组中，所述背光模组包括一后盖，所述背板包括一封装区域，所述封装区域设上设置有多个所述连接器和所述驱动模块，所述后盖罩设在所述封装区域上。\n\n[0021]在本申请的背光模组中，所述灯板结构包括第一焊盘和第二焊盘，所述第一焊盘设置在所述第二设置面上，所述第一焊盘电性连接于对应的所述第一走线；所述第二焊盘设置在所述第三设置面上，所述第二焊盘电性连接于对应的所述第二走线；\n\n[0022]所述第一焊盘和所述第二焊盘电性连接。\n\n[0023]在本申请的背光模组中，所述第一焊盘和所述第二焊盘通过回流焊或加热焊接。\n\n[0024]在本申请的背光模组中，所述发光元件为Mini-LED灯。\n\n[0025]相较于现有技术的背光模组，本申请的背光模组通过将多个第一PCB板焊接在一个第二PCB板上，减少了连接器的数量，进而减少了连接器和驱动模块的连接线数量，同时背光模组中将多个连接器集中设置在设置面靠近驱动模块的一侧，进而缩小了后盖的尺寸，使得背光模组未罩设有后盖的区域实现薄型化；解决了现有的背光模组对应大尺寸机种而言，需要采用多块灯板进行拼接，导致多个连接器外露于背板之外，从而需要整面形后盖罩设整个背光模组，且由于多个连接器的存在导致连接器和驱动板结构的连接复杂化的技术问题。\n\n附图说明\n\n[0026]为了更清楚地说明本申请实施例或现有技术中的技术方案，下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本申请的部分实施例，对于本领域普通技术人员而言，在不付出创造性劳动的前提下，还可以根据这些附图获取其他的附图。\n\n[0027]图1为现有技术的背光模组的结构示意图；\n\n[0028]图2为本申请的背光模组的第一实施例的俯视结构示意图；\n\n[0029]图3为本申请的背光模组的第一实施例的剖面结构示意图；\n\n[0030]图4为本申请的背光模组的第一实施例的灯板结构的分体示意图；\n\n[0031]图5为本申请的背光模组的第二实施例的剖面结构示意图。\n\n具体实施方式\n\n[0032]请参照附图中的图式，其中相同的组件符号代表相同的组件。以下的说明是基于所例示的本申请具体实施例，其不应被视为限制本申请未在此详述的其它具体实施例。\n\n[0033]请参照图2至图4，图2为本申请的背光模组的第一实施例的俯视结构示意图；图3为本申请的背光模组的第一实施例的剖面结构示意图；图4为本申请的背光模组的第一实施例的灯板结构的分体示意图。\n\n[0034]本申请第一实施例的背光模组2000，其包括至少一个灯板结构200、一背板25、一驱动模块26、连接线27和后盖28。驱动模块26用于驱动灯板结构200的发光元件22发光。\n\n[0035]每个灯板结构200包括至少两个第一PCB板21、多个发光元件22、一第二PCB板23和一连接器24。每个灯板结构200对应设置一个连接器24。\n\n[0036]至少两个第一PCB板21并排且拼接设置。每个第一PCB板21包括第一子设置面21a和第二子设置面21b。第一子设置面21a和第二子设置面21b背向设置。第二子设置面21b上设置有第一走线，所有第二子设置面21b拼接形成一第二设置面21C。发光元件22设置在第一子设置面21a上，第一走线电性连接发光元件22。第二PCB板23设置在至少两个第一PCB板21的下方。第二PCB板23包括第三设置面23a和第四设置面23b。第三设置面23a和第四设置面23b背向设置。第三设置面23a面向第二设置面21C，第三设置面23a上设置有第二走线，第二走线和第一走线电性连接。连接器24设置在第四设置面23b上。连接器24电性连接于第二走线。\n\n[0037]其中第三设置面23a的面积大于第二子设置面21b的面积。\n\n[0038]在本第一实施例中，发光元件22为LED灯，优选的，发光元件22为Mini-LED灯。由于受Mini-LED固晶机台的限制，Mini-LED单板尺寸不超过300*300mm(毫米)。即第一PCB板21的尺寸不超过300*300mm(毫米)。而由于第二PCB板23的第三设置面23a的面积大于第一PCB板21的第二设置面21b的面积，所以第二PCB板23的尺寸大于300*300mm(毫米)。可选的，第二PCB板23的面积为第一PCB板21的N倍，N≥2，N为整数。也就是说，一块第二PCB板23上可以设置多块第一PCB板21。\n\n[0039]本申请第一实施例的灯板结构200通过将多个第一PCB板21焊接在一个第二PCB板23上，减少了连接器24的数量，进而减少了连接器24和驱动模块26的连接线27数量。同时在背光模组2000中，将多个连接器24集中设置在设置面200C靠近驱动模块26的一侧，进而缩小了后盖28的尺寸，使得背光模组2000未罩设有后盖28的区域实现薄型化。\n\n[0040]进一步的，背光模组2000包括至少两个灯板结构200。至少两个灯板结构200并排且拼接设置。在本第一实施例中，以背光模组2000包括两个灯板结构200为例进行说明，但并不限于此。具体的，每个灯板结构200包括三块第一PCB板21和一块第二PCB板23，三块第一PCB板21设置在一块第二PCB板23上。\n\n[0041]在本第一实施例中，驱动模块26电性连接于连接器24。连接器24通过连接线27和驱动模块26连接。至少两个灯板结构200拼接形成一灯板整体。\n\n[0042]其中，所有连接器24并排设置在灯板整体靠近驱动模块26的一侧。\n\n[0043]这样的设置，将所有的连接器24集中在封装区域内，一方面便于和驱动模块26连接，简化连接步骤；另一方面节省连接线27的长度，节约了成本。\n\n[0044]在本第一实施例中，背光模组2000包括一背板25。所有的第四设置面23b拼接形成一灯板整体的设置面200C。背板25设置在设置面200C上。背板25上设置有多个开口。每个连接器24对应设置在一个开口内。驱动模块26设置在背板25的一侧。\n\n[0045]在本第一实施例中，背光模组2000包括一后盖28。背板25包括一封装区域，封装区域设上设置有多个连接器24和驱动模块26。后盖28罩设在封装区域上。由于连接器24集中在封装区域内，进而较现有技术缩小了后盖28的结构尺寸。即后盖28只需罩设封装区域，而不需罩设整个背板。从而薄化了背光模组2000未被后盖28罩设的区域。\n\n[0046]在本第一实施例中，灯板结构200包括第一焊盘211和第二焊盘231。第一焊盘211设置在第二设置面21C上。第一焊盘211电性连接于对应的第一走线。第二焊盘231设置在第三设置面23a上。第二焊盘231电性连接于对应的第二走线。第一焊盘211和对应的第二焊盘231电性连接。\n\n[0047]在本第一实施例中，第一焊盘211和对应的第二焊盘231通过回流焊或加热焊接。\n\n[0048]本第一实施例的组装过程是：\n\n[0049]首先，在灯板结构200的第一PCB板21的第一子设置面21a进行Mini-LED(发光元件22)打件，并在第二子设置面21b上设置第一焊盘211。\n\n[0050]接着，在灯板结构200的第二PCB板23的第三设置面23a设置与对应第一焊盘211的第二焊盘231，在第四设置面23b设置连接器24。\n\n[0051]其次，将多个第二PCB板预先组装在背板25上，并使得连接器24设置在背板25的开口内。\n\n[0052]然后，将设置有发光元件22的多个第一PCB板21放置第二PCB板23上，并进行对位固定。\n\n[0053]随后，进行加热或回流焊，使得第一焊盘211和第二焊盘231焊接在一起。\n\n[0054]之后，在背板25上设置驱动模块26，并通过连接线27将驱动模块26和连接器24连接起来。\n\n[0055]最后，将后盖28罩设在背光25的封装区域上。\n\n[0056]这样便完成了本第一实施例背光模组2000的组装过程。\n\n[0057]请参照图5，在本申请的第二实施例中，背光模组3000包括一背板35、一驱动模块36、连接线37和后盖38。本第二实施例与第一实施例的不同之处在于：背光模组3000包括一个灯板结构300。每个灯板结构300包括至少两个第一PCB板31、多个发光元件32、一第二PCB板33和一连接器34。其中，连接器34设置在灯板结构300靠近驱动模块36的一侧。\n\n[0058]在本第二实施例中，第一PCB板31有六块，第二PCB板33有一块，六块第一PCB板31设置在一块第二PCB板33上。\n\n[0059]其中灯板结构300和第一实施例的灯板结构一致，具体请参照第一实施例的灯板结构，在此不再赘述。\n\n[0060]相较于现有技术的背光模组，本申请的背光模组通过将多个第一PCB板焊接在一个第二PCB板上，减少了连接器的数量，进而减少了连接器和驱动模块的连接线数量，同时背光模组中将多个连接器集中设置在设置面靠近驱动模块的一侧，进而缩小了后盖的尺寸，使得背光模组未罩设有后盖的区域实现薄型化；解决了现有的背光模组对应大尺寸机种而言，需要采用多块灯板进行拼接，导致多个连接器外露于背板之外，从而需要整面形后盖罩设整个背光模组，且由于多个连接器的存在导致连接器和驱动板结构的连接复杂化的技术问题。\n\n[0061]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。', '技术领域\n\n[0001]本申请涉及一种背光技术，特别涉及一种背光模组。\n\n背景技术\n\n[0002]市场Mini-LED在作为背光使用时，仍然将其类似于传统LED PKG，采用固晶方式固定于MCPCB板。\n\n[0003]由于LED尺寸和Pitch均很小，此时在PCB上采用传统结构固定连接器(connector)难以实现，通常需要采用双面PCB板11，即在正面打件LED 12和走线，在背面打件连接器13。具体结构如图1所示。同时由于现行Mini-LED绑定(bonding)限制，导致单块灯板尺寸有限。对于大尺寸机种，需求采用多灯板拼接方式实现。由于一个灯板设置有一个连接器13，此时连接器13连接需求，需将其外露在背板14之外。\n\n[0004]为保护外置的连接器需要整面型后盖15，背光模组1000无法实现真正薄型化效果。同时外置连接器13结构易在组装过程中损坏，且其多个连接器13和驱动板结构16的连接走线复杂化亦不利于背光模组1000组装。\n\n发明内容\n\n[0005]本申请实施例提供一种背光模组，以解决现有的背光模组对应大尺寸机种而言，需要采用多块灯板进行拼接，导致多个连接器外露于背板之外，从而需要整面形后盖罩设整个背光模组，且由于多个连接器的存在导致连接器和驱动板结构的连接复杂化的技术问题。\n\n[0006]本申请实施例提供一种背光模组，其包括至少一个灯板结构，每个所述灯板结构包括：\n\n[0007]至少两个第一PCB板，所述至少两个第一PCB板并排且拼接设置，每个所述第一PCB板包括第一子设置面和第二子设置面，第一子设置面和第二子设置面背向设置，所述第二子设置面上设置有第一走线，所有所述第二子设置面拼接形成一第二设置面；\n\n[0008]多个发光元件，设置在所述第一子设置面上，所述第一走线电性连接所述发光元件；\n\n[0009]一第二PCB板，设置在所述至少两个第一PCB板的下方，所述第二PCB板包括第三设置面和第四设置面，第三设置面和第四设置面背向设置，所述第三设置面面向所述第二设置面，所述第三设置面上设置有第二走线，所述第二走线和所述第一走线电性连接；以及\n\n[0010]一连接器，设置在所述第四设置面上，所述连接器电性连接于所述第二走线；\n\n[0011]其中所述第三设置面的面积大于所述第二子设置面的面积。\n\n[0012]在本申请的背光模组中，所述背光模组包括一驱动模块，所述驱动模块用于驱动所述发光元件发光，所述驱动模块电性连接于所述连接器。\n\n[0013]在本申请的背光模组中，所述背光模组包括至少两个所述灯板结构，至少两个所述灯板结构并排且拼接设置，每个所述灯板结构对应设置一个所述连接器，至少两个所述灯板结构拼接形成一灯板整体；\n\n[0014]其中，所有所述连接器并排设置在所述灯板整体靠近所述驱动模块的一侧。\n\n[0015]在本申请的背光模组中，所述背光模组包括一个所述灯板结构；\n\n[0016]其中，所述连接器设置在所述灯板结构靠近所述驱动模块的一侧。\n\n[0017]在本申请的背光模组中，所述背光模组包括一背板，所有的所述第四设置面拼接形成一所述灯板整体的设置面，所述背板设置在所述设置面上；\n\n[0018]所述背板上设置有多个开口，每个所述连接器对应设置在一个所述开口内，所述驱动模块设置在所述背板的一侧。\n\n[0019]在本申请的背光模组中，所述连接器通过连接线和所述驱动模块连接。\n\n[0020]在本申请的背光模组中，所述背光模组包括一后盖，所述背板包括一封装区域，所述封装区域设上设置有多个所述连接器和所述驱动模块，所述后盖罩设在所述封装区域上。\n\n[0021]在本申请的背光模组中，所述灯板结构包括第一焊盘和第二焊盘，所述第一焊盘设置在所述第二设置面上，所述第一焊盘电性连接于对应的所述第一走线；所述第二焊盘设置在所述第三设置面上，所述第二焊盘电性连接于对应的所述第二走线；\n\n[0022]所述第一焊盘和所述第二焊盘电性连接。\n\n[0023]在本申请的背光模组中，所述第一焊盘和所述第二焊盘通过回流焊或加热焊接。\n\n[0024]在本申请的背光模组中，所述发光元件为Mini-LED灯。\n\n[0025]相较于现有技术的背光模组，本申请的背光模组通过将多个第一PCB板焊接在一个第二PCB板上，减少了连接器的数量，进而减少了连接器和驱动模块的连接线数量，同时背光模组中将多个连接器集中设置在设置面靠近驱动模块的一侧，进而缩小了后盖的尺寸，使得背光模组未罩设有后盖的区域实现薄型化；解决了现有的背光模组对应大尺寸机种而言，需要采用多块灯板进行拼接，导致多个连接器外露于背板之外，从而需要整面形后盖罩设整个背光模组，且由于多个连接器的存在导致连接器和驱动板结构的连接复杂化的技术问题。\n\n附图说明\n\n[0026]为了更清楚地说明本申请实施例或现有技术中的技术方案，下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本申请的部分实施例，对于本领域普通技术人员而言，在不付出创造性劳动的前提下，还可以根据这些附图获取其他的附图。\n\n[0027]图1为现有技术的背光模组的结构示意图；\n\n[0028]图2为本申请的背光模组的第一实施例的俯视结构示意图；\n\n[0029]图3为本申请的背光模组的第一实施例的剖面结构示意图；\n\n[0030]图4为本申请的背光模组的第一实施例的灯板结构的分体示意图；\n\n[0031]图5为本申请的背光模组的第二实施例的剖面结构示意图。\n\n具体实施方式\n\n[0032]请参照附图中的图式，其中相同的组件符号代表相同的组件。以下的说明是基于所例示的本申请具体实施例，其不应被视为限制本申请未在此详述的其它具体实施例。\n\n[0033]请参照图2至图4，图2为本申请的背光模组的第一实施例的俯视结构示意图；图3为本申请的背光模组的第一实施例的剖面结构示意图；图4为本申请的背光模组的第一实施例的灯板结构的分体示意图。\n\n[0034]本申请第一实施例的背光模组2000，其包括至少一个灯板结构200、一背板25、一驱动模块26、连接线27和后盖28。驱动模块26用于驱动灯板结构200的发光元件22发光。\n\n[0035]每个灯板结构200包括至少两个第一PCB板21、多个发光元件22、一第二PCB板23和一连接器24。每个灯板结构200对应设置一个连接器24。\n\n[0036]至少两个第一PCB板21并排且拼接设置。每个第一PCB板21包括第一子设置面21a和第二子设置面21b。第一子设置面21a和第二子设置面21b背向设置。第二子设置面21b上设置有第一走线，所有第二子设置面21b拼接形成一第二设置面21C。发光元件22设置在第一子设置面21a上，第一走线电性连接发光元件22。第二PCB板23设置在至少两个第一PCB板21的下方。第二PCB板23包括第三设置面23a和第四设置面23b。第三设置面23a和第四设置面23b背向设置。第三设置面23a面向第二设置面21C，第三设置面23a上设置有第二走线，第二走线和第一走线电性连接。连接器24设置在第四设置面23b上。连接器24电性连接于第二走线。\n\n[0037]其中第三设置面23a的面积大于第二子设置面21b的面积。\n\n[0038]在本第一实施例中，发光元件22为LED灯，优选的，发光元件22为Mini-LED灯。由于受Mini-LED固晶机台的限制，Mini-LED单板尺寸不超过300*300mm(毫米)。即第一PCB板21的尺寸不超过300*300mm(毫米)。而由于第二PCB板23的第三设置面23a的面积大于第一PCB板21的第二设置面21b的面积，所以第二PCB板23的尺寸大于300*300mm(毫米)。可选的，第二PCB板23的面积为第一PCB板21的N倍，N≥2，N为整数。也就是说，一块第二PCB板23上可以设置多块第一PCB板21。\n\n[0039]本申请第一实施例的灯板结构200通过将多个第一PCB板21焊接在一个第二PCB板23上，减少了连接器24的数量，进而减少了连接器24和驱动模块26的连接线27数量。同时在背光模组2000中，将多个连接器24集中设置在设置面200C靠近驱动模块26的一侧，进而缩小了后盖28的尺寸，使得背光模组2000未罩设有后盖28的区域实现薄型化。\n\n[0040]进一步的，背光模组2000包括至少两个灯板结构200。至少两个灯板结构200并排且拼接设置。在本第一实施例中，以背光模组2000包括两个灯板结构200为例进行说明，但并不限于此。具体的，每个灯板结构200包括三块第一PCB板21和一块第二PCB板23，三块第一PCB板21设置在一块第二PCB板23上。\n\n[0041]在本第一实施例中，驱动模块26电性连接于连接器24。连接器24通过连接线27和驱动模块26连接。至少两个灯板结构200拼接形成一灯板整体。\n\n[0042]其中，所有连接器24并排设置在灯板整体靠近驱动模块26的一侧。\n\n[0043]这样的设置，将所有的连接器24集中在封装区域内，一方面便于和驱动模块26连接，简化连接步骤；另一方面节省连接线27的长度，节约了成本。\n\n[0044]在本第一实施例中，背光模组2000包括一背板25。所有的第四设置面23b拼接形成一灯板整体的设置面200C。背板25设置在设置面200C上。背板25上设置有多个开口。每个连接器24对应设置在一个开口内。驱动模块26设置在背板25的一侧。\n\n[0045]在本第一实施例中，背光模组2000包括一后盖28。背板25包括一封装区域，封装区域设上设置有多个连接器24和驱动模块26。后盖28罩设在封装区域上。由于连接器24集中在封装区域内，进而较现有技术缩小了后盖28的结构尺寸。即后盖28只需罩设封装区域，而不需罩设整个背板。从而薄化了背光模组2000未被后盖28罩设的区域。\n\n[0046]在本第一实施例中，灯板结构200包括第一焊盘211和第二焊盘231。第一焊盘211设置在第二设置面21C上。第一焊盘211电性连接于对应的第一走线。第二焊盘231设置在第三设置面23a上。第二焊盘231电性连接于对应的第二走线。第一焊盘211和对应的第二焊盘231电性连接。\n\n[0047]在本第一实施例中，第一焊盘211和对应的第二焊盘231通过回流焊或加热焊接。\n\n[0048]本第一实施例的组装过程是：\n\n[0049]首先，在灯板结构200的第一PCB板21的第一子设置面21a进行Mini-LED(发光元件22)打件，并在第二子设置面21b上设置第一焊盘211。\n\n[0050]接着，在灯板结构200的第二PCB板23的第三设置面23a设置与对应第一焊盘211的第二焊盘231，在第四设置面23b设置连接器24。\n\n[0051]其次，将多个第二PCB板预先组装在背板25上，并使得连接器24设置在背板25的开口内。\n\n[0052]然后，将设置有发光元件22的多个第一PCB板21放置第二PCB板23上，并进行对位固定。\n\n[0053]随后，进行加热或回流焊，使得第一焊盘211和第二焊盘231焊接在一起。\n\n[0054]之后，在背板25上设置驱动模块26，并通过连接线27将驱动模块26和连接器24连接起来。\n\n[0055]最后，将后盖28罩设在背光25的封装区域上。\n\n[0056]这样便完成了本第一实施例背光模组2000的组装过程。\n\n[0057]请参照图5，在本申请的第二实施例中，背光模组3000包括一背板35、一驱动模块36、连接线37和后盖38。本第二实施例与第一实施例的不同之处在于：背光模组3000包括一个灯板结构300。每个灯板结构300包括至少两个第一PCB板31、多个发光元件32、一第二PCB板33和一连接器34。其中，连接器34设置在灯板结构300靠近驱动模块36的一侧。\n\n[0058]在本第二实施例中，第一PCB板31有六块，第二PCB板33有一块，六块第一PCB板31设置在一块第二PCB板33上。\n\n[0059]其中灯板结构300和第一实施例的灯板结构一致，具体请参照第一实施例的灯板结构，在此不再赘述。\n\n[0060]相较于现有技术的背光模组，本申请的背光模组通过将多个第一PCB板焊接在一个第二PCB板上，减少了连接器的数量，进而减少了连接器和驱动模块的连接线数量，同时背光模组中将多个连接器集中设置在设置面靠近驱动模块的一侧，进而缩小了后盖的尺寸，使得背光模组未罩设有后盖的区域实现薄型化；解决了现有的背光模组对应大尺寸机种而言，需要采用多块灯板进行拼接，导致多个连接器外露于背板之外，从而需要整面形后盖罩设整个背光模组，且由于多个连接器的存在导致连接器和驱动板结构的连接复杂化的技术问题。\n\n[0061]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10647, 23701, '技术领域\n\n[0001]本发明涉及发光二极管技术领域，特别涉及一种面光源芯片及其发光二极管。\n\n背景技术\n\n[0002]miniLED又称为次毫米发光二极管或面光源，作为下一代显示技术被LED产业链中诸多企业看好。其有着柔性可弯曲、低功耗、高亮度、高动态对比度和窄边框等诸多优势，受到多数厂商的青睐。然而，miniLED在光学表现上也面临着一些需要克服的问题，比如出光效率较低、混光不均匀以及成本较高等问题也一直困扰着产业界。由于成本控制的需要，面光源需要用尽可能少的芯片实现正常的背光亮度显示，然而相邻芯片之间距离(pitch)的增大会带来混光的不均匀，常用的芯片膜层结构中多采用DBR(布拉格)反射层，但此种反射层对光线的反射带有角度方向性，大视角方向反射光强度较弱，从而造成混光不均匀，对此人们暂未有较好的解决方式。\n\n发明内容\n\n[0003]为解决芯片膜层结构中DBR层(布拉格反射层)大视角方向反射光强度较弱造成混光不均匀，本发明在面光源芯片上采用ODR层(Omni-Directional Reflector，全角度反射膜层)替代DBR层，使芯片在出光角度范围内光强分布更加均匀，从整体上提升面光源整面混光均匀性。\n\n[0004]为了实现上述目的，本发明采用了如下的技术方案：\n\n[0005]本发明的一实施例中，提供一种面光源芯片包括蓝宝石基板、蓝宝石基板下方的N型GaN缓冲层以及在N型GaN缓冲层下方形成的芯片正极区和芯片负极区，其中，所述芯片正极区从上到下依次包括N型GaN层、MQW(多量子阱)发光层、ODR层及芯片正极，所述芯片负极区包括芯片负极。\n\n[0006]进一步的，其中所述ODR层从上到下依次包括半导体材料层、折射层和金属层。\n\n[0007]进一步的，其中所述半导体材料层为GaN层。\n\n[0008]进一步的，其中所述折射层为ITO(氧化铟锡，Indium tin oxide)层或微孔氧化物薄膜。折射率的数值越小，经折射的光偏转越小，故选用较低折射率的材料为折射层。\n\n[0009]进一步的，其中所述折射层的厚度满足λ/(4n)，其中λ为波长、n为所述折射层折射率。\n\n[0010]进一步的，其中所述金属层材料为电导率材料，包括金镍混合物或银。\n\n[0011]进一步的，其中所述芯片正极下方为正极金属电极焊盘，所述芯片负极下方为负极金属电极焊盘。\n\n[0012]本发明的另一实施例中，提供一种发光二极管，包括上述任一项的所述面光源芯片。\n\n[0013]进一步的，其中所述发光二极管还包括基板和荧光薄膜，基板用于承载所述面光源芯片，荧光薄膜覆盖所述基板及所述面光源芯片。\n\n[0014]进一步的，其中所述面光源芯片等间距设置于所述基板上。\n\n[0015]区别于现有技术的情况，本发明通过提供一种面光源芯片，在面光源芯片上采用全角度反射膜层ODR替代布拉格反射膜层DBR，使芯片在出光角度范围内光强分布更加均匀，从整体上提升面光源整面混光均匀性。\n\n[0016]同时，DBR层多为绝缘材料构成，其导电性能和散热性能较差，使得面光源芯片在大电流条件下易产生光量饱和现象。ODR层相对于DBR层而言，其在具备较高反射率的同时，反射率基本不随入射角的变化而变化，从而避免在接近正视角条件下短波长反射率较低造成正视条件下光效的降低并影响全角度范围内色度的均匀性的问题。\n\n附图说明\n\n[0017]图1是本发明一种实施方式的面光源芯片的结构示意图；\n\n[0018]图2是本发明一种实施方式的发光二极管的结构示意图。\n\n[0019]图中部件标识如下：\n\n[0020]1蓝宝石基板、2N型GaN缓冲层、3N型GaN层、4MQW发光层、\n\n[0021]5ODR层、6芯片正极、7芯片负极，\n\n[0022]10芯片正极区、20芯片负极区，\n\n[0023]51半导体材料层、52折射层、53金属层，\n\n[0024]61正极金属电极焊盘、71负极金属电极焊盘，\n\n[0025]100面光源芯片、200基板、300荧光薄膜。\n\n具体实施方式\n\n[0026]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0027]请参阅图1所示，本发明的一实施例中，提供一种面光源芯片100包括蓝宝石基板1、蓝宝石基板1下方的N型GaN缓冲层2以及在N型GaN缓冲层2下方形成的芯片正极区10和芯片负极区20，其中，所述芯片正极区10从上到下依次包括N型GaN层3、MQW发光层4、ODR层5及芯片正极6，所述芯片负极区20包括芯片负极7。\n\n[0028]其中所述ODR层5从上到下依次包括半导体材料层51、折射层52和金属层53。\n\n[0029]其中所述半导体材料层51为GaN层。GaN材料具有宽带隙、高电子迁移率、高热导率、高稳定性等一系列优点。\n\n[0030]其中所述折射层52为ITO层或微孔氧化物薄膜。折射率的数值越小，经折射的光偏转越小，故选用较低折射率的材料为折射层52。\n\n[0031]其中所述折射层52的厚度满足λ/(4n)，其中λ为波长、n为所述折射层52折射率。\n\n[0032]其中所述金属层53材料为电导率材料，包括金镍混合物或银，优选为银，可以作为形成ODR结构的高反射金属，提高了芯片的亮度。\n\n[0033]其中所述芯片正极6下方为正极金属电极焊盘61，所述芯片负极7下方为负极金属电极焊盘71。\n\n[0034]请参阅图2所示，本发明的另一实施例中，提供一种发光二极管，包括上述任一项的所述面光源芯片100。\n\n[0035]其中所述发光二极管还包括基板200和荧光薄膜300，基板200用于承载所述面光源芯片100，荧光薄膜300覆盖所述基板200及所述面光源芯片100。荧光薄膜300可以是封装胶形式，如掺有荧光粉的荧光胶。\n\n[0036]其中所述面光源芯片100等间距设置于所述基板200上。\n\n[0037]区别于现有技术的情况，本发明通过提供一种面光源芯片，在面光源芯片上采用全角度反射膜层ODR替代布拉格反射膜层DBR，使芯片在出光角度范围内光强分布更加均匀，从整体上提升面光源整面混光均匀性，从而保证面光源在大pitch芯片排布时较好的混光效果和较高的发光效率。\n\n[0038]同时，DBR层多为绝缘材料构成，其导电性能和散热性能较差，使得面光源芯片在大电流条件下易产生光量饱和现象。ODR层相对于DBR层而言，其在具备较高反射率的同时，反射率基本不随入射角的变化而变化，从而避免在接近正视角条件下短波长反射率较低造成正视条件下光效的降低并影响全角度范围内色度的均匀性的问题。\n\n[0039]以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。', '技术领域\n\n[0001]本发明涉及发光二极管技术领域，特别涉及一种面光源芯片及其发光二极管。\n\n背景技术\n\n[0002]miniLED又称为次毫米发光二极管或面光源，作为下一代显示技术被LED产业链中诸多企业看好。其有着柔性可弯曲、低功耗、高亮度、高动态对比度和窄边框等诸多优势，受到多数厂商的青睐。然而，miniLED在光学表现上也面临着一些需要克服的问题，比如出光效率较低、混光不均匀以及成本较高等问题也一直困扰着产业界。由于成本控制的需要，面光源需要用尽可能少的芯片实现正常的背光亮度显示，然而相邻芯片之间距离(pitch)的增大会带来混光的不均匀，常用的芯片膜层结构中多采用DBR(布拉格)反射层，但此种反射层对光线的反射带有角度方向性，大视角方向反射光强度较弱，从而造成混光不均匀，对此人们暂未有较好的解决方式。\n\n发明内容\n\n[0003]为解决芯片膜层结构中DBR层(布拉格反射层)大视角方向反射光强度较弱造成混光不均匀，本发明在面光源芯片上采用ODR层(Omni-Directional Reflector，全角度反射膜层)替代DBR层，使芯片在出光角度范围内光强分布更加均匀，从整体上提升面光源整面混光均匀性。\n\n[0004]为了实现上述目的，本发明采用了如下的技术方案：\n\n[0005]本发明的一实施例中，提供一种面光源芯片包括蓝宝石基板、蓝宝石基板下方的N型GaN缓冲层以及在N型GaN缓冲层下方形成的芯片正极区和芯片负极区，其中，所述芯片正极区从上到下依次包括N型GaN层、MQW(多量子阱)发光层、ODR层及芯片正极，所述芯片负极区包括芯片负极。\n\n[0006]进一步的，其中所述ODR层从上到下依次包括半导体材料层、折射层和金属层。\n\n[0007]进一步的，其中所述半导体材料层为GaN层。\n\n[0008]进一步的，其中所述折射层为ITO(氧化铟锡，Indium tin oxide)层或微孔氧化物薄膜。折射率的数值越小，经折射的光偏转越小，故选用较低折射率的材料为折射层。\n\n[0009]进一步的，其中所述折射层的厚度满足λ/(4n)，其中λ为波长、n为所述折射层折射率。\n\n[0010]进一步的，其中所述金属层材料为电导率材料，包括金镍混合物或银。\n\n[0011]进一步的，其中所述芯片正极下方为正极金属电极焊盘，所述芯片负极下方为负极金属电极焊盘。\n\n[0012]本发明的另一实施例中，提供一种发光二极管，包括上述任一项的所述面光源芯片。\n\n[0013]进一步的，其中所述发光二极管还包括基板和荧光薄膜，基板用于承载所述面光源芯片，荧光薄膜覆盖所述基板及所述面光源芯片。\n\n[0014]进一步的，其中所述面光源芯片等间距设置于所述基板上。\n\n[0015]区别于现有技术的情况，本发明通过提供一种面光源芯片，在面光源芯片上采用全角度反射膜层ODR替代布拉格反射膜层DBR，使芯片在出光角度范围内光强分布更加均匀，从整体上提升面光源整面混光均匀性。\n\n[0016]同时，DBR层多为绝缘材料构成，其导电性能和散热性能较差，使得面光源芯片在大电流条件下易产生光量饱和现象。ODR层相对于DBR层而言，其在具备较高反射率的同时，反射率基本不随入射角的变化而变化，从而避免在接近正视角条件下短波长反射率较低造成正视条件下光效的降低并影响全角度范围内色度的均匀性的问题。\n\n附图说明\n\n[0017]图1是本发明一种实施方式的面光源芯片的结构示意图；\n\n[0018]图2是本发明一种实施方式的发光二极管的结构示意图。\n\n[0019]图中部件标识如下：\n\n[0020]1蓝宝石基板、2N型GaN缓冲层、3N型GaN层、4MQW发光层、\n\n[0021]5ODR层、6芯片正极、7芯片负极，\n\n[0022]10芯片正极区、20芯片负极区，\n\n[0023]51半导体材料层、52折射层、53金属层，\n\n[0024]61正极金属电极焊盘、71负极金属电极焊盘，\n\n[0025]100面光源芯片、200基板、300荧光薄膜。\n\n具体实施方式\n\n[0026]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0027]请参阅图1所示，本发明的一实施例中，提供一种面光源芯片100包括蓝宝石基板1、蓝宝石基板1下方的N型GaN缓冲层2以及在N型GaN缓冲层2下方形成的芯片正极区10和芯片负极区20，其中，所述芯片正极区10从上到下依次包括N型GaN层3、MQW发光层4、ODR层5及芯片正极6，所述芯片负极区20包括芯片负极7。\n\n[0028]其中所述ODR层5从上到下依次包括半导体材料层51、折射层52和金属层53。\n\n[0029]其中所述半导体材料层51为GaN层。GaN材料具有宽带隙、高电子迁移率、高热导率、高稳定性等一系列优点。\n\n[0030]其中所述折射层52为ITO层或微孔氧化物薄膜。折射率的数值越小，经折射的光偏转越小，故选用较低折射率的材料为折射层52。\n\n[0031]其中所述折射层52的厚度满足λ/(4n)，其中λ为波长、n为所述折射层52折射率。\n\n[0032]其中所述金属层53材料为电导率材料，包括金镍混合物或银，优选为银，可以作为形成ODR结构的高反射金属，提高了芯片的亮度。\n\n[0033]其中所述芯片正极6下方为正极金属电极焊盘61，所述芯片负极7下方为负极金属电极焊盘71。\n\n[0034]请参阅图2所示，本发明的另一实施例中，提供一种发光二极管，包括上述任一项的所述面光源芯片100。\n\n[0035]其中所述发光二极管还包括基板200和荧光薄膜300，基板200用于承载所述面光源芯片100，荧光薄膜300覆盖所述基板200及所述面光源芯片100。荧光薄膜300可以是封装胶形式，如掺有荧光粉的荧光胶。\n\n[0036]其中所述面光源芯片100等间距设置于所述基板200上。\n\n[0037]区别于现有技术的情况，本发明通过提供一种面光源芯片，在面光源芯片上采用全角度反射膜层ODR替代布拉格反射膜层DBR，使芯片在出光角度范围内光强分布更加均匀，从整体上提升面光源整面混光均匀性，从而保证面光源在大pitch芯片排布时较好的混光效果和较高的发光效率。\n\n[0038]同时，DBR层多为绝缘材料构成，其导电性能和散热性能较差，使得面光源芯片在大电流条件下易产生光量饱和现象。ODR层相对于DBR层而言，其在具备较高反射率的同时，反射率基本不随入射角的变化而变化，从而避免在接近正视角条件下短波长反射率较低造成正视条件下光效的降低并影响全角度范围内色度的均匀性的问题。\n\n[0039]以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10648, 23702, '技术领域\n\n[0001]本发明涉及显示技术领域，具体涉及一种柔性直下式背光源及其显示装置。\n\n背景技术\n\n[0002]目前，发光二极管(英语：Light-Emitting Diode，简称LED)的背光源分为侧光式与直下式。侧光式背光源是将线形或点状光源设置在经过特殊设计的导光板的侧边做成的背光源。导光板原理是利用导光压克力板底的网点分布破坏光的干涉现象，将线光源均匀转换成面光源，其作用在于引导光的散射方向，让光的分布更加均匀使从正面看不到反射点的影子，用来提高面板的亮度，并确保面板亮度的均匀性，其中导光板的优良对背光影响甚大。导光板根据实际使用的需要，又可做成双边式、三边式甚至四边式。\n\n[0003]相较于测光式背光源，由于直下式背光源不需要导光板，因此其制备工艺也是相对简单的。直下式背光源是将光源(LED晶片阵列)及印刷电路板置于背光源底部，光线从LED射出后，通过底部的反射片，再通过表面的扩散板、增亮膜均匀地射出。\n\n[0004]传统液晶面板采用玻璃材质基板，由于无法进行大曲率的自由弯曲，已经无法满足人们的需求，因此需要开发柔性液晶面板。随着时代的发展，柔性基板的液晶的开发，对背光的柔性和可变曲率下提出了更高的要求。传统的直下式背光由于灯箱厚度高，且灯箱之间具有支钉支撑，在反复弯折的情况下，支钉容易产生变形，改变局部灯箱高度，从而出现显示器亮度不均造成各种痕迹的现象。因此，需要寻找一种直下式背光源以满足大曲率的自由弯曲，避免出现显示器亮度不均造成各种痕迹的现象。\n\n发明内容\n\n[0005]本发明的一个目的是提供一种柔性直下式背光源及其显示装置，其能够解决目前直下式背光源无法满足大曲率的自由弯曲的问题。\n\n[0006]为了解决上述问题，本专利的一个实施方式提供一种柔性直下式背光源，包括石墨烯散热涂层、柔性电路板、迷你发光二极管、气泡胶层以及光学膜层。所述柔性电路板设置于所述石墨烯散热涂层上面；所述迷你发光二极管设置于所述柔性电路板上面；所述气泡胶层设置于所述迷你发光二极管上面；所述光学膜层设置于所述气泡胶层上面。其中所述气泡胶层内部设有至少两个气泡。\n\n[0007]进一步地，其中所述气泡胶层的组成材料包括硅胶、环氧胶以及亚克力中的至少一种。\n\n[0008]进一步地，其中所述气泡胶层的组成材料还包括UV光固化剂、无机颗粒以及惰性气体的混合物中的至少一种。\n\n[0009]进一步地，其中所述气泡是在搅拌所述气泡胶层的胶体的过程中往胶层中加入N2或CO2气体形成的。\n\n[0010]进一步地，其中所述气泡的直径范围为1-10微米。\n\n[0011]进一步地，其中所述迷你发光二极管包括2个及2个以上的数量，所述迷你发光二极管组成一个矩形阵列，均匀设置在所述柔性电路板上面。\n\n[0012]进一步地，其中所述光学膜层包括依次设置的扩散片、棱镜片以及增亮膜。所述扩散片设置于所述柔性直下式背光源的气泡胶层上；所述棱镜片设置于所述扩散片上；所述增亮膜设置于所述棱镜片上。\n\n[0013]进一步地，其中所述柔性电路板是由聚酰亚胺或聚酯薄膜为基材制成的。\n\n[0014]本专利的另一个实施方式还提供一种显示装置，包括上述本发明涉及的的所述柔性直下式背光源和柔性液晶屏，其中所述柔性液晶屏通过粘结胶贴合于所述柔性直下式背光源上面。\n\n[0015]进一步地，其中所述粘结胶的组成材料包括硅胶、环氧胶以及亚克力中的一种，以及UV光固化剂、无机颗粒以及惰性气体中的至少一种。\n\n[0016]本发明的优点是：本发明涉及的一种柔性直下式背光源及其显示装置。首先，通过在光学膜及迷你发光二极管之间设置具有微小气泡的气泡胶层，可以使迷你发光二极管发出的光经过气泡胶层时发生反射，从而可以有效扩散迷你发光二极管发出的光，降低气泡胶层厚度；其次，由于气泡的存在，可提升胶层的隔热特性，增加热阻，降低从背光传递到液晶屏的热量，降低液晶屏温度，提高液晶材料的黏度，减少漏光；最后，由于气泡胶层存在，可提升背光源的柔韧特性，在弯曲状态下，由于气泡的收缩性好，可以很好的抵消一部分材料弯曲引起的材料变形量，可使背光源满足更大的弯曲曲率。\n\n附图说明\n\n[0017]下面结合附图和实施例对本发明作进一步解释。\n\n[0018]图1是本发明的柔性直下式背光源的结构示意图。\n\n[0019]图2是本发明的柔性直下式背光源弯曲状态下的结构示意图。\n\n[0020]图3是本发明显示装置的结构示意图。\n\n[0021]图中标识如下：\n\n[0022]1、石墨烯散热涂层 2、柔性电路板\n\n[0023]3、迷你发光二极管 4、气泡胶层\n\n[0024]5、光学膜层 6、柔性液晶屏\n\n[0025]41、气泡\n\n具体实施方式\n\n[0026]以下实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「顶」、「底」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。\n\n[0027]实施例1\n\n[0028]如图1所示，本发明提供的一种柔性直下式背光源，其中包括依次设置的石墨烯散热涂层1、柔性电路板2、迷你发光二极管3、气泡胶层4以及光学膜层5。\n\n[0029]其中所述石墨烯散热涂层1的组成材料石墨烯(Graphene)是一种由碳原子以sp2杂化轨道组成六角型呈蜂巢晶格的二维碳纳米材料。由于石墨烯具有非常好的热传导性能，因此能够很好的将背光源产生的热量向外界传送。\n\n[0030]其中所述柔性电路板2(英文全称：Flexible Printed Circuit，简称FPC)设置于所述石墨烯散热涂层1上面。所述柔性电路板2是由聚酰亚胺或聚酯薄膜为基材制成的。因此柔性电路板2具有配线密度高、重量轻、厚度薄、弯折性好的特点，能够满足大曲率的要求。\n\n[0031]其中所述迷你发光二极管3设置于所述柔性电路板2上面。其中所述迷你发光二极管3包括2个及2个以上的数量，组成一个矩形阵列，均匀设置在所述柔性电路板2上面。由此形成一个均匀的面光源，均匀发光，避免漏光。\n\n[0032]如图1、图2所示，所述气泡胶层4设置于所述迷你发光二极管3上面。其中所述气泡胶层4内部设有至少两个气泡41，具体地，其中所述气泡41是在搅拌所述气泡胶层4的胶体的过程中往胶层中加入N2或CO2气体形成的。首先，气泡41的存在可以使迷你发光二极管3发出的光经过气泡胶层4时发生反射，从而可以有效扩散迷你发光二极管3发出的光，降低气泡胶层4厚度；其次，由于气泡41的存在，可提升气泡胶层4的隔热特性，增加热阻，降低从背光传递到液晶屏的热量，降低液晶屏温度，提高液晶材料的黏度，减少漏光；最后，由于气泡胶层具有极强的柔韧性，可提升背光源的柔韧特性，在弯曲状态下，由于气泡的收缩性好，可以很好的抵消一部分材料弯曲引起的材料变形量，可使背光源满足更大的弯曲曲率。\n\n[0033]其中所述气泡胶层4的胶体组成材料包括硅胶、环氧胶以及亚克力中的至少一种，由此气泡胶层4可以起到很好的粘结功能。所述组成材料中还可以添加UV光固化剂、无机颗粒以及惰性气体的混合物中的至少一种。由此，由此可以防止气泡胶层4的氧化，延长气泡胶层4的使用期限。\n\n[0034]其中所述气泡41的直径范围为1-10微米。如果气泡41直径大于10微米，无法达到全反射的效果；如果气泡41直径小于1微米，无法达到提升气泡胶层4的隔热特性的效果。\n\n[0035]其中所述光学膜层5设置于所述气泡胶层4上面。其中所述光学膜层5包括依次设置的扩散片、棱镜片以及增亮膜。所述扩散片设置于所述柔性直下式背光源的气泡胶层上，扩散片主要是在扩散膜基材中，加入一颗颗的化学颗粒，作为散射粒子，光缐在经过扩散片时会不断的在两个折射率相异的介质中穿过，在此同时光缐就会发生许多折射、反射与散射的现象，如此便造成了光学扩散的效果。所述棱镜片设置于所述扩散片上，迷你发光二极管3射入的光在通过棱镜片时，只有入射光在某一角度范围之内的光才可以通过折射作用出射，其余的光因不满足折射条件而被棱镜边沿反射回光源，再由光源底部的反射片作用而重新出射。这样，迷你发光二极管3中的光线在棱镜结构的作用下，不断的循环利用，原本向各个方向发散的光线在通过棱镜膜后，被控制到一定的角度范围内，从而达到轴向亮度增强的效果。所述增亮膜设置于所述棱镜片上。综上所述，光学膜层5的设置主要是提升背光源的的均匀性和亮度。\n\n[0036]实施例2\n\n[0037]以下仅就本实施例与第一实施例间的相异之处进行说明，而其相同之处则在此不再赘述。\n\n[0038]如图3所示，本发明还提供一种显示装置，包括上述的柔性直下式背光源以及柔性液晶屏6。所述柔性液晶屏6通过粘结胶贴合于所述柔性直下式背光源上面。\n\n[0039]其中所述粘结胶的组成材料包括硅胶、环氧胶以及亚克力中的至少一种，以及UV光固化剂、无机颗粒以及惰性气体中的至少一种。\n\n[0040]以上仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。', '技术领域\n\n[0001]本发明涉及显示技术领域，具体涉及一种柔性直下式背光源及其显示装置。\n\n背景技术\n\n[0002]目前，发光二极管(英语：Light-Emitting Diode，简称LED)的背光源分为侧光式与直下式。侧光式背光源是将线形或点状光源设置在经过特殊设计的导光板的侧边做成的背光源。导光板原理是利用导光压克力板底的网点分布破坏光的干涉现象，将线光源均匀转换成面光源，其作用在于引导光的散射方向，让光的分布更加均匀使从正面看不到反射点的影子，用来提高面板的亮度，并确保面板亮度的均匀性，其中导光板的优良对背光影响甚大。导光板根据实际使用的需要，又可做成双边式、三边式甚至四边式。\n\n[0003]相较于测光式背光源，由于直下式背光源不需要导光板，因此其制备工艺也是相对简单的。直下式背光源是将光源(LED晶片阵列)及印刷电路板置于背光源底部，光线从LED射出后，通过底部的反射片，再通过表面的扩散板、增亮膜均匀地射出。\n\n[0004]传统液晶面板采用玻璃材质基板，由于无法进行大曲率的自由弯曲，已经无法满足人们的需求，因此需要开发柔性液晶面板。随着时代的发展，柔性基板的液晶的开发，对背光的柔性和可变曲率下提出了更高的要求。传统的直下式背光由于灯箱厚度高，且灯箱之间具有支钉支撑，在反复弯折的情况下，支钉容易产生变形，改变局部灯箱高度，从而出现显示器亮度不均造成各种痕迹的现象。因此，需要寻找一种直下式背光源以满足大曲率的自由弯曲，避免出现显示器亮度不均造成各种痕迹的现象。\n\n发明内容\n\n[0005]本发明的一个目的是提供一种柔性直下式背光源及其显示装置，其能够解决目前直下式背光源无法满足大曲率的自由弯曲的问题。\n\n[0006]为了解决上述问题，本专利的一个实施方式提供一种柔性直下式背光源，包括石墨烯散热涂层、柔性电路板、迷你发光二极管、气泡胶层以及光学膜层。所述柔性电路板设置于所述石墨烯散热涂层上面；所述迷你发光二极管设置于所述柔性电路板上面；所述气泡胶层设置于所述迷你发光二极管上面；所述光学膜层设置于所述气泡胶层上面。其中所述气泡胶层内部设有至少两个气泡。\n\n[0007]进一步地，其中所述气泡胶层的组成材料包括硅胶、环氧胶以及亚克力中的至少一种。\n\n[0008]进一步地，其中所述气泡胶层的组成材料还包括UV光固化剂、无机颗粒以及惰性气体的混合物中的至少一种。\n\n[0009]进一步地，其中所述气泡是在搅拌所述气泡胶层的胶体的过程中往胶层中加入N2或CO2气体形成的。\n\n[0010]进一步地，其中所述气泡的直径范围为1-10微米。\n\n[0011]进一步地，其中所述迷你发光二极管包括2个及2个以上的数量，所述迷你发光二极管组成一个矩形阵列，均匀设置在所述柔性电路板上面。\n\n[0012]进一步地，其中所述光学膜层包括依次设置的扩散片、棱镜片以及增亮膜。所述扩散片设置于所述柔性直下式背光源的气泡胶层上；所述棱镜片设置于所述扩散片上；所述增亮膜设置于所述棱镜片上。\n\n[0013]进一步地，其中所述柔性电路板是由聚酰亚胺或聚酯薄膜为基材制成的。\n\n[0014]本专利的另一个实施方式还提供一种显示装置，包括上述本发明涉及的的所述柔性直下式背光源和柔性液晶屏，其中所述柔性液晶屏通过粘结胶贴合于所述柔性直下式背光源上面。\n\n[0015]进一步地，其中所述粘结胶的组成材料包括硅胶、环氧胶以及亚克力中的一种，以及UV光固化剂、无机颗粒以及惰性气体中的至少一种。\n\n[0016]本发明的优点是：本发明涉及的一种柔性直下式背光源及其显示装置。首先，通过在光学膜及迷你发光二极管之间设置具有微小气泡的气泡胶层，可以使迷你发光二极管发出的光经过气泡胶层时发生反射，从而可以有效扩散迷你发光二极管发出的光，降低气泡胶层厚度；其次，由于气泡的存在，可提升胶层的隔热特性，增加热阻，降低从背光传递到液晶屏的热量，降低液晶屏温度，提高液晶材料的黏度，减少漏光；最后，由于气泡胶层存在，可提升背光源的柔韧特性，在弯曲状态下，由于气泡的收缩性好，可以很好的抵消一部分材料弯曲引起的材料变形量，可使背光源满足更大的弯曲曲率。\n\n附图说明\n\n[0017]下面结合附图和实施例对本发明作进一步解释。\n\n[0018]图1是本发明的柔性直下式背光源的结构示意图。\n\n[0019]图2是本发明的柔性直下式背光源弯曲状态下的结构示意图。\n\n[0020]图3是本发明显示装置的结构示意图。\n\n[0021]图中标识如下：\n\n[0022]1、石墨烯散热涂层 2、柔性电路板\n\n[0023]3、迷你发光二极管 4、气泡胶层\n\n[0024]5、光学膜层 6、柔性液晶屏\n\n[0025]41、气泡\n\n具体实施方式\n\n[0026]以下实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「顶」、「底」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。\n\n[0027]实施例1\n\n[0028]如图1所示，本发明提供的一种柔性直下式背光源，其中包括依次设置的石墨烯散热涂层1、柔性电路板2、迷你发光二极管3、气泡胶层4以及光学膜层5。\n\n[0029]其中所述石墨烯散热涂层1的组成材料石墨烯(Graphene)是一种由碳原子以sp2杂化轨道组成六角型呈蜂巢晶格的二维碳纳米材料。由于石墨烯具有非常好的热传导性能，因此能够很好的将背光源产生的热量向外界传送。\n\n[0030]其中所述柔性电路板2(英文全称：Flexible Printed Circuit，简称FPC)设置于所述石墨烯散热涂层1上面。所述柔性电路板2是由聚酰亚胺或聚酯薄膜为基材制成的。因此柔性电路板2具有配线密度高、重量轻、厚度薄、弯折性好的特点，能够满足大曲率的要求。\n\n[0031]其中所述迷你发光二极管3设置于所述柔性电路板2上面。其中所述迷你发光二极管3包括2个及2个以上的数量，组成一个矩形阵列，均匀设置在所述柔性电路板2上面。由此形成一个均匀的面光源，均匀发光，避免漏光。\n\n[0032]如图1、图2所示，所述气泡胶层4设置于所述迷你发光二极管3上面。其中所述气泡胶层4内部设有至少两个气泡41，具体地，其中所述气泡41是在搅拌所述气泡胶层4的胶体的过程中往胶层中加入N2或CO2气体形成的。首先，气泡41的存在可以使迷你发光二极管3发出的光经过气泡胶层4时发生反射，从而可以有效扩散迷你发光二极管3发出的光，降低气泡胶层4厚度；其次，由于气泡41的存在，可提升气泡胶层4的隔热特性，增加热阻，降低从背光传递到液晶屏的热量，降低液晶屏温度，提高液晶材料的黏度，减少漏光；最后，由于气泡胶层具有极强的柔韧性，可提升背光源的柔韧特性，在弯曲状态下，由于气泡的收缩性好，可以很好的抵消一部分材料弯曲引起的材料变形量，可使背光源满足更大的弯曲曲率。\n\n[0033]其中所述气泡胶层4的胶体组成材料包括硅胶、环氧胶以及亚克力中的至少一种，由此气泡胶层4可以起到很好的粘结功能。所述组成材料中还可以添加UV光固化剂、无机颗粒以及惰性气体的混合物中的至少一种。由此，由此可以防止气泡胶层4的氧化，延长气泡胶层4的使用期限。\n\n[0034]其中所述气泡41的直径范围为1-10微米。如果气泡41直径大于10微米，无法达到全反射的效果；如果气泡41直径小于1微米，无法达到提升气泡胶层4的隔热特性的效果。\n\n[0035]其中所述光学膜层5设置于所述气泡胶层4上面。其中所述光学膜层5包括依次设置的扩散片、棱镜片以及增亮膜。所述扩散片设置于所述柔性直下式背光源的气泡胶层上，扩散片主要是在扩散膜基材中，加入一颗颗的化学颗粒，作为散射粒子，光缐在经过扩散片时会不断的在两个折射率相异的介质中穿过，在此同时光缐就会发生许多折射、反射与散射的现象，如此便造成了光学扩散的效果。所述棱镜片设置于所述扩散片上，迷你发光二极管3射入的光在通过棱镜片时，只有入射光在某一角度范围之内的光才可以通过折射作用出射，其余的光因不满足折射条件而被棱镜边沿反射回光源，再由光源底部的反射片作用而重新出射。这样，迷你发光二极管3中的光线在棱镜结构的作用下，不断的循环利用，原本向各个方向发散的光线在通过棱镜膜后，被控制到一定的角度范围内，从而达到轴向亮度增强的效果。所述增亮膜设置于所述棱镜片上。综上所述，光学膜层5的设置主要是提升背光源的的均匀性和亮度。\n\n[0036]实施例2\n\n[0037]以下仅就本实施例与第一实施例间的相异之处进行说明，而其相同之处则在此不再赘述。\n\n[0038]如图3所示，本发明还提供一种显示装置，包括上述的柔性直下式背光源以及柔性液晶屏6。所述柔性液晶屏6通过粘结胶贴合于所述柔性直下式背光源上面。\n\n[0039]其中所述粘结胶的组成材料包括硅胶、环氧胶以及亚克力中的至少一种，以及UV光固化剂、无机颗粒以及惰性气体中的至少一种。\n\n[0040]以上仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。');
INSERT INTO `os_patent_instruction_text` VALUES (10649, 23703, '技术领域\n\n[0001]本发明涉及显示面板技术领域，尤其涉及一种反光电路板及其制作方法。\n\n背景技术\n\n[0002]发光二极管(英文:Mini Light Emitting Diode，简称:LED)是一种能发光的半导体电子元件。芯片是LED中最重要的组成部分，广泛应用在户内和户外的显示屏上。从最先开始的电视机显示屏，发展到电脑显示屏，再发展到现在的手机显示屏，显示屏的尺寸逐渐减小，应用在显示屏上的LED芯片的尺寸也要相应减小，从而产生了尺寸大小达到微米级的迷你发光二极管(英文简称:Mini-LED)芯片。在制造工艺方面，与柔性基板耦合时，MiniLED芯片也适用于凹口设计和高度弯曲的背光。局部调光功能也有助于迷你LED产品具有更好的显色性能。对于液晶显示面板，Mini LED技术可实现更多类别的HDR，而Mini LED产品可以像有机发光二极管一样薄，同时还可以节省功耗。\n\n[0003]目前mini-LED芯片开始被应用在显示屏和液晶显示面板的背光上，一般mini-LED的芯片在0.1-0.5mm之间，常见的方案是把mini-LED的芯片直接打件在电路板上。当用于背光时，mini-LED芯片发出的光部分经过背光膜片的反射回到电路板上，由于电路板上的白漆，反射率普遍不高，导致光被电路板吸收，进而使整体背光效率较低。另外，由于mini-LED芯片一般高度不足0.1mm，可以看出LED芯片非常小，无法在电路板表面使用传统的反射片，从而导致LED面板的背光效率不良。\n\n发明内容\n\n[0004]本发明的目的在于，提供一种反光电路板的制作方法及反光电路板，以解决现有技术中存在电路板上的白漆反射率较低、mini-LED芯片背光效率低的技术问题。\n\n[0005]本发明提供一种反光电路板的制作方法，包括如下步骤：电路板准备步骤，提供一电路板，其上表面设有至少一LED芯片，所述LED芯片上表面为发光面；光刻胶涂覆步骤，在所述电路板的上表面涂覆光刻胶，在所述电路板及所述LED芯片的上表面分别形成一光刻胶层；光刻胶固化步骤，为所述LED芯片通电，固化所述LED芯片上表面的光刻胶层；光刻胶第一去除步骤，清洗所述电路板上表面，去除未固化的光刻胶层；镀银步骤，对所述电路板上表面进行镀银处理，在所述电路板上表面形成第一反光层，在所述LED芯片上已固化的光刻胶层的上表面形成第二反光层；保护层制备步骤，涂覆有机溶剂至所述第一反光层、所述第二反光层上表面，在所述第一反光层、所述第二反光层表面形成保护层；光刻胶第二去除步骤，清洗所述电路板上表面，去除已固化的光刻胶层及所述第二反光层。\n\n[0006]进一步地，所述LED芯片为mini-LED芯片。\n\n[0007]进一步地，在所述电路板准备步骤中，所述LED芯片被倒装式安装至所述电路板。\n\n[0008]进一步地，所述电路板包括一线路层，所述LED芯片底部设有两个引脚，所述引脚被焊接至所述线路层。\n\n[0009]进一步地，所述光刻胶的固化波段与所述LED芯片的光束的波段一致。\n\n[0010]进一步地，所述LED芯片为蓝光LED芯片；所述光刻胶为聚乙烯醇肉桂酸醋系列光刻胶。\n\n[0011]进一步地，所述光刻胶第一去除步骤中，采用显影液清洗所述电路板表面。\n\n[0012]进一步地，所述保护层制备步骤中，采用有机溶剂制备保护层。\n\n[0013]进一步地，所述光刻胶第二去除步骤中，采用剥落液清洗所述电路板表面。\n\n[0014]本发明还提供一种反光电路板，包括电路板，设有至少一LED芯片；以及反光层，贴附于所述电路板上除所述LED芯片以外的区域。\n\n[0015]本发明的技术效果在于，提供一种安装有mini-LED的反光电路板，除LED发光面以外的部分都镀银，形成反光层，有效改善电路板的反光效果。所述反光电路板应用于背光模组后，反光层使电路板上的LED芯片发出部分的光经过背光膜片的反射回到电路板上而不会被电路板吸收，可有效提高背光模组的背光效率、改善背光模组的背光效果。\n\n附图说明\n\n[0016]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0017]图1是本发明实施例所述反光电路板的制作方法的流程图；\n\n[0018]图2是本发明实施例反光电路板结构示意图；\n\n[0019]图3是本发明实施例所述反光电路板在光刻胶涂覆步骤中的结构示意图；\n\n[0020]图4是本发明实施例所述反光电路板在光刻胶第一步去除步骤中的结构示意图；\n\n[0021]图5是本发明实施例所述反光电路板在镀银步骤中的结构示意图；\n\n[0022]图6是本发明实施例所述反光电路板在保护层制备步骤中的结构示意图；\n\n[0023]图7是本发明实施例所述反光电路板在光刻胶第二去除步骤中的结构示意图。\n\n[0024]附图部件标识如下：\n\n[0025]1电路板；2LED芯片；3线路层；4引脚；5光刻胶；\n\n[0026]61第一反光层；62第二反光层；7保护层。\n\n具体实施方式\n\n[0027]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0028]本发明的说明书和权利要求书以及上述附图中的术语“第一”、“第二”、“第三”等(如果存在)是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。应当理解，这样描述的对象在适当情况下可以互换。此外，术语“包括”和“具有”以及他们的任何变形，意图在于覆盖不排他的包含。\n\n[0029]在本专利文档中，下文论述的附图以及用来描述本发明公开的原理的各实施例仅用于说明，而不应解释为限制本发明公开的范围。所属领域的技术人员将理解，本发明的原理可在任何适当布置的系统中实施。将详细说明示例性实施方式，在附图中示出了这些实施方式的实例。此外，将参考附图详细描述根据示例性实施例的终端。附图中的相同附图标号指代相同的元件。\n\n[0030]本发明说明书中使用的术语仅用来描述特定实施方式，而并不意图显示本发明的概念。除非上下文中有明确不同的意义，否则，以单数形式使用的表达涵盖复数形式的表达。在本发明说明书中，应理解，诸如“包括”、“具有”以及“含有”等术语意图说明存在本发明说明书中揭示的特征、数字、步骤、动作或其组合的可能性，而并不意图排除可存在或可添加一个或多个其他特征、数字、步骤、动作或其组合的可能性。附图中的相同参考标号指代相同部分。\n\n[0031]为更进一步阐述本发明为达成预定发明目的所采取的技术方式及功效，以下结合附图及实施例，对本发明的具体实施方式、结构、特征及其功效，详细说明如后。\n\n[0032]本发明实施例提供一种反光电路板的制作方法及反光电路板，以下将参照附图进行详细说明。\n\n[0033]如图1所示，本实施例提供一种反光电路板的制作方法，包括如下步骤S1～S7。\n\n[0034]S1电路板准备步骤，提供一电路板，其上表面设有至少一LED芯片，所述LED芯片上表面为发光面；\n\n[0035]S2光刻胶涂覆步骤，在所述电路板的上表面涂覆光刻胶，在所述电路板及所述LED芯片的上表面分别形成一光刻胶层；\n\n[0036]S3光刻胶固化步骤，为所述LED芯片通电，固化所述LED芯片上表面的光刻胶层；\n\n[0037]S4光刻胶第一去除步骤，清洗所述电路板上表面，去除未固化的光刻胶层；\n\n[0038]S5镀银步骤，对所述电路板上表面进行镀银处理，在所述电路板上表面形成第一反光层，在所述LED芯片上已固化的光刻胶层的上表面形成第二反光层；\n\n[0039]S6保护层制备步骤，涂覆有机溶剂至所述第一反光层、所述第二反光层上表面，在所述第一反光层、所述第二反光层表面形成保护层；\n\n[0040]S7光刻胶第二去除步骤，清洗所述电路板上表面，去除已固化的光刻胶层及所述第二反光层。\n\n[0041]如图2所示，在S1电路板准备步骤中，电路板1包括一线路层3、LED芯片2。线路层3为铜线路层；LED芯片2为mini-LED芯片，其大小为100～200um，这样的LED芯片2不仅轻薄、节省功耗，还具有更高的显色性能。\n\n[0042]LED芯片2倒装式安装至电路板1，因为倒装结构的LED芯片2与正装结构相比缩短了热流路径，具有更低的热阻，从而更有利于散热。每个LED芯片2底部设有两个引脚4，引脚4被焊接至线路层3，通过焊接锡膏将电路板1与LED芯片2连接。两个引脚4，一个为正极，一个为负极。当引脚4与电路板1连接时存在一定的空隙，因为当电路板1通电时，该空隙的空气将正负极绝缘隔离，从而避免发生短路等故障。如图3所示，在S2光刻胶涂覆步骤中，在电路板1及LED芯片2的上表面涂覆光刻胶，进而形成一光刻胶层5。所述的光刻胶通常有三种成分：感光化合物、基体材料和溶剂，在感光化合物中有时还包括增感剂。本实施例中涂覆的光刻胶为负性光刻胶，选用聚乙烯醇肉桂酸醋系列光刻胶，其感光波长在370-470nm。\n\n[0043]如图3所示，在S3光刻胶固化步骤中，电路板1通电，电路板1上的LED芯片2被点亮。LED芯片2会根据自身发出光束的颜色对LED芯片2上表面的光刻胶进行固化，LED芯片2不需要掩模就可以对光刻胶进行固化，因为实施例中使用了LED芯片2本身作为掩模的作用进而对光刻胶进行固化。优选地，本实施例采用LED芯片2发出蓝光对光刻胶进行固化，光刻胶的固化波段与LED芯片2光束的波段一致。此外，本领域技术人员可以根据LED芯片2自身发出的光束的颜色选用匹配的光刻胶进行涂覆，在此不做赘述。\n\n[0044]如图4所示，在S4光刻胶第一去除步骤中，采用显影液去除未固化的光刻胶层5即涂覆于所述电路板上表面的光刻胶层。显影液是溶解由曝光造成的光刻胶的可溶解区域的一种化学溶剂。本实施例中只要能达到显影的效果，对显影液不做限定。\n\n[0045]如图5所示，在S5镀银步骤中，对电路板上1表面进行镀银处理。在电路板上1表面形成第一反光层61，在LED芯片2上已固化的光刻胶层5的上表面形成第二反光层62。镀银的方式可为电镀银或化学镀银等。优选地，本实施例采用的是化学镀银，因为化学镀银液具有镀银稳定性高、防银变色能力强等特点。在电路板1进行镀银时，化学镀银液不仅拥有更好的光亮性、抗变色性以及低成本、易操作的性能，而且能使电路板1具有良好的反光能力，进而改善电路板1的反光效果，提高背光效率。\n\n[0046]如图6所示，在S6保护层制备步骤中，在第一反光层61表面采用有机溶剂制备保护层7，一般地，有机溶剂通过采用镀金、喷锡、OSP(护铜剂)等制作保护层7。优选地，本实施例采用OSP在第一反光层61表面形成保护层7。\n\n[0047]如图7所示，在S7光刻胶第二去除步骤中，采用剥落液去除第二反光层62及第二反光层62上表面的光刻胶即涂覆于LED芯片2上表面的光刻胶，剩余的第一反光层61可以使LED芯片发出的光不被电路板1吸收，进而整体地提高背光效率。所采用的剥落溶液为成熟的剥离液，一般都是碱性溶液。\n\n[0048]本实施例还提供一种反光电路板，包括电路板及反光层，电路板上设有至少一LED芯片；反光层即前文所述的第一反光层，反光层贴附于所述电路板上除所述LED芯片以外的区域。\n\n[0049]在所述LED芯片以外的区域制作反光层的方案，取代电路板上使用传统反射片的方案，可以有效提高背光效率。\n\n[0050]上下文有明确的相反提示，否则本文中所述的所有方法的步骤都可以按任何适当次序加以执行。本发明的改变并不限于描述的步骤顺序。除非另外主张，否则使用本文中所提供的任何以及所有实例或示例性语言(例如，“例如”)都仅仅为了更好地说明本发明的概念，而并非对本发明的概念的范围加以限制。在不脱离精神和范围的情况下，所属领域的技术人员将易于明白多种修改和适应。\n\n[0051]以上对本发明实施例所提供的一种反光电路板及其制作方法进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。在每个示例性实施方式中对特征或方面的描述通常应被视作适用于其他示例性实施例中的类似特征或方面。尽管参考示例性实施例描述了本发明，但可建议所属领域的技术人员进行各种变化和更改。本发明意图涵盖所附权利要求书的范围内的这些变化和更改。', '技术领域\n\n[0001]本发明涉及显示面板技术领域，尤其涉及一种反光电路板及其制作方法。\n\n背景技术\n\n[0002]发光二极管(英文:Mini Light Emitting Diode，简称:LED)是一种能发光的半导体电子元件。芯片是LED中最重要的组成部分，广泛应用在户内和户外的显示屏上。从最先开始的电视机显示屏，发展到电脑显示屏，再发展到现在的手机显示屏，显示屏的尺寸逐渐减小，应用在显示屏上的LED芯片的尺寸也要相应减小，从而产生了尺寸大小达到微米级的迷你发光二极管(英文简称:Mini-LED)芯片。在制造工艺方面，与柔性基板耦合时，MiniLED芯片也适用于凹口设计和高度弯曲的背光。局部调光功能也有助于迷你LED产品具有更好的显色性能。对于液晶显示面板，Mini LED技术可实现更多类别的HDR，而Mini LED产品可以像有机发光二极管一样薄，同时还可以节省功耗。\n\n[0003]目前mini-LED芯片开始被应用在显示屏和液晶显示面板的背光上，一般mini-LED的芯片在0.1-0.5mm之间，常见的方案是把mini-LED的芯片直接打件在电路板上。当用于背光时，mini-LED芯片发出的光部分经过背光膜片的反射回到电路板上，由于电路板上的白漆，反射率普遍不高，导致光被电路板吸收，进而使整体背光效率较低。另外，由于mini-LED芯片一般高度不足0.1mm，可以看出LED芯片非常小，无法在电路板表面使用传统的反射片，从而导致LED面板的背光效率不良。\n\n发明内容\n\n[0004]本发明的目的在于，提供一种反光电路板的制作方法及反光电路板，以解决现有技术中存在电路板上的白漆反射率较低、mini-LED芯片背光效率低的技术问题。\n\n[0005]本发明提供一种反光电路板的制作方法，包括如下步骤：电路板准备步骤，提供一电路板，其上表面设有至少一LED芯片，所述LED芯片上表面为发光面；光刻胶涂覆步骤，在所述电路板的上表面涂覆光刻胶，在所述电路板及所述LED芯片的上表面分别形成一光刻胶层；光刻胶固化步骤，为所述LED芯片通电，固化所述LED芯片上表面的光刻胶层；光刻胶第一去除步骤，清洗所述电路板上表面，去除未固化的光刻胶层；镀银步骤，对所述电路板上表面进行镀银处理，在所述电路板上表面形成第一反光层，在所述LED芯片上已固化的光刻胶层的上表面形成第二反光层；保护层制备步骤，涂覆有机溶剂至所述第一反光层、所述第二反光层上表面，在所述第一反光层、所述第二反光层表面形成保护层；光刻胶第二去除步骤，清洗所述电路板上表面，去除已固化的光刻胶层及所述第二反光层。\n\n[0006]进一步地，所述LED芯片为mini-LED芯片。\n\n[0007]进一步地，在所述电路板准备步骤中，所述LED芯片被倒装式安装至所述电路板。\n\n[0008]进一步地，所述电路板包括一线路层，所述LED芯片底部设有两个引脚，所述引脚被焊接至所述线路层。\n\n[0009]进一步地，所述光刻胶的固化波段与所述LED芯片的光束的波段一致。\n\n[0010]进一步地，所述LED芯片为蓝光LED芯片；所述光刻胶为聚乙烯醇肉桂酸醋系列光刻胶。\n\n[0011]进一步地，所述光刻胶第一去除步骤中，采用显影液清洗所述电路板表面。\n\n[0012]进一步地，所述保护层制备步骤中，采用有机溶剂制备保护层。\n\n[0013]进一步地，所述光刻胶第二去除步骤中，采用剥落液清洗所述电路板表面。\n\n[0014]本发明还提供一种反光电路板，包括电路板，设有至少一LED芯片；以及反光层，贴附于所述电路板上除所述LED芯片以外的区域。\n\n[0015]本发明的技术效果在于，提供一种安装有mini-LED的反光电路板，除LED发光面以外的部分都镀银，形成反光层，有效改善电路板的反光效果。所述反光电路板应用于背光模组后，反光层使电路板上的LED芯片发出部分的光经过背光膜片的反射回到电路板上而不会被电路板吸收，可有效提高背光模组的背光效率、改善背光模组的背光效果。\n\n附图说明\n\n[0016]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0017]图1是本发明实施例所述反光电路板的制作方法的流程图；\n\n[0018]图2是本发明实施例反光电路板结构示意图；\n\n[0019]图3是本发明实施例所述反光电路板在光刻胶涂覆步骤中的结构示意图；\n\n[0020]图4是本发明实施例所述反光电路板在光刻胶第一步去除步骤中的结构示意图；\n\n[0021]图5是本发明实施例所述反光电路板在镀银步骤中的结构示意图；\n\n[0022]图6是本发明实施例所述反光电路板在保护层制备步骤中的结构示意图；\n\n[0023]图7是本发明实施例所述反光电路板在光刻胶第二去除步骤中的结构示意图。\n\n[0024]附图部件标识如下：\n\n[0025]1电路板；2LED芯片；3线路层；4引脚；5光刻胶；\n\n[0026]61第一反光层；62第二反光层；7保护层。\n\n具体实施方式\n\n[0027]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0028]本发明的说明书和权利要求书以及上述附图中的术语“第一”、“第二”、“第三”等(如果存在)是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。应当理解，这样描述的对象在适当情况下可以互换。此外，术语“包括”和“具有”以及他们的任何变形，意图在于覆盖不排他的包含。\n\n[0029]在本专利文档中，下文论述的附图以及用来描述本发明公开的原理的各实施例仅用于说明，而不应解释为限制本发明公开的范围。所属领域的技术人员将理解，本发明的原理可在任何适当布置的系统中实施。将详细说明示例性实施方式，在附图中示出了这些实施方式的实例。此外，将参考附图详细描述根据示例性实施例的终端。附图中的相同附图标号指代相同的元件。\n\n[0030]本发明说明书中使用的术语仅用来描述特定实施方式，而并不意图显示本发明的概念。除非上下文中有明确不同的意义，否则，以单数形式使用的表达涵盖复数形式的表达。在本发明说明书中，应理解，诸如“包括”、“具有”以及“含有”等术语意图说明存在本发明说明书中揭示的特征、数字、步骤、动作或其组合的可能性，而并不意图排除可存在或可添加一个或多个其他特征、数字、步骤、动作或其组合的可能性。附图中的相同参考标号指代相同部分。\n\n[0031]为更进一步阐述本发明为达成预定发明目的所采取的技术方式及功效，以下结合附图及实施例，对本发明的具体实施方式、结构、特征及其功效，详细说明如后。\n\n[0032]本发明实施例提供一种反光电路板的制作方法及反光电路板，以下将参照附图进行详细说明。\n\n[0033]如图1所示，本实施例提供一种反光电路板的制作方法，包括如下步骤S1～S7。\n\n[0034]S1电路板准备步骤，提供一电路板，其上表面设有至少一LED芯片，所述LED芯片上表面为发光面；\n\n[0035]S2光刻胶涂覆步骤，在所述电路板的上表面涂覆光刻胶，在所述电路板及所述LED芯片的上表面分别形成一光刻胶层；\n\n[0036]S3光刻胶固化步骤，为所述LED芯片通电，固化所述LED芯片上表面的光刻胶层；\n\n[0037]S4光刻胶第一去除步骤，清洗所述电路板上表面，去除未固化的光刻胶层；\n\n[0038]S5镀银步骤，对所述电路板上表面进行镀银处理，在所述电路板上表面形成第一反光层，在所述LED芯片上已固化的光刻胶层的上表面形成第二反光层；\n\n[0039]S6保护层制备步骤，涂覆有机溶剂至所述第一反光层、所述第二反光层上表面，在所述第一反光层、所述第二反光层表面形成保护层；\n\n[0040]S7光刻胶第二去除步骤，清洗所述电路板上表面，去除已固化的光刻胶层及所述第二反光层。\n\n[0041]如图2所示，在S1电路板准备步骤中，电路板1包括一线路层3、LED芯片2。线路层3为铜线路层；LED芯片2为mini-LED芯片，其大小为100～200um，这样的LED芯片2不仅轻薄、节省功耗，还具有更高的显色性能。\n\n[0042]LED芯片2倒装式安装至电路板1，因为倒装结构的LED芯片2与正装结构相比缩短了热流路径，具有更低的热阻，从而更有利于散热。每个LED芯片2底部设有两个引脚4，引脚4被焊接至线路层3，通过焊接锡膏将电路板1与LED芯片2连接。两个引脚4，一个为正极，一个为负极。当引脚4与电路板1连接时存在一定的空隙，因为当电路板1通电时，该空隙的空气将正负极绝缘隔离，从而避免发生短路等故障。如图3所示，在S2光刻胶涂覆步骤中，在电路板1及LED芯片2的上表面涂覆光刻胶，进而形成一光刻胶层5。所述的光刻胶通常有三种成分：感光化合物、基体材料和溶剂，在感光化合物中有时还包括增感剂。本实施例中涂覆的光刻胶为负性光刻胶，选用聚乙烯醇肉桂酸醋系列光刻胶，其感光波长在370-470nm。\n\n[0043]如图3所示，在S3光刻胶固化步骤中，电路板1通电，电路板1上的LED芯片2被点亮。LED芯片2会根据自身发出光束的颜色对LED芯片2上表面的光刻胶进行固化，LED芯片2不需要掩模就可以对光刻胶进行固化，因为实施例中使用了LED芯片2本身作为掩模的作用进而对光刻胶进行固化。优选地，本实施例采用LED芯片2发出蓝光对光刻胶进行固化，光刻胶的固化波段与LED芯片2光束的波段一致。此外，本领域技术人员可以根据LED芯片2自身发出的光束的颜色选用匹配的光刻胶进行涂覆，在此不做赘述。\n\n[0044]如图4所示，在S4光刻胶第一去除步骤中，采用显影液去除未固化的光刻胶层5即涂覆于所述电路板上表面的光刻胶层。显影液是溶解由曝光造成的光刻胶的可溶解区域的一种化学溶剂。本实施例中只要能达到显影的效果，对显影液不做限定。\n\n[0045]如图5所示，在S5镀银步骤中，对电路板上1表面进行镀银处理。在电路板上1表面形成第一反光层61，在LED芯片2上已固化的光刻胶层5的上表面形成第二反光层62。镀银的方式可为电镀银或化学镀银等。优选地，本实施例采用的是化学镀银，因为化学镀银液具有镀银稳定性高、防银变色能力强等特点。在电路板1进行镀银时，化学镀银液不仅拥有更好的光亮性、抗变色性以及低成本、易操作的性能，而且能使电路板1具有良好的反光能力，进而改善电路板1的反光效果，提高背光效率。\n\n[0046]如图6所示，在S6保护层制备步骤中，在第一反光层61表面采用有机溶剂制备保护层7，一般地，有机溶剂通过采用镀金、喷锡、OSP(护铜剂)等制作保护层7。优选地，本实施例采用OSP在第一反光层61表面形成保护层7。\n\n[0047]如图7所示，在S7光刻胶第二去除步骤中，采用剥落液去除第二反光层62及第二反光层62上表面的光刻胶即涂覆于LED芯片2上表面的光刻胶，剩余的第一反光层61可以使LED芯片发出的光不被电路板1吸收，进而整体地提高背光效率。所采用的剥落溶液为成熟的剥离液，一般都是碱性溶液。\n\n[0048]本实施例还提供一种反光电路板，包括电路板及反光层，电路板上设有至少一LED芯片；反光层即前文所述的第一反光层，反光层贴附于所述电路板上除所述LED芯片以外的区域。\n\n[0049]在所述LED芯片以外的区域制作反光层的方案，取代电路板上使用传统反射片的方案，可以有效提高背光效率。\n\n[0050]上下文有明确的相反提示，否则本文中所述的所有方法的步骤都可以按任何适当次序加以执行。本发明的改变并不限于描述的步骤顺序。除非另外主张，否则使用本文中所提供的任何以及所有实例或示例性语言(例如，“例如”)都仅仅为了更好地说明本发明的概念，而并非对本发明的概念的范围加以限制。在不脱离精神和范围的情况下，所属领域的技术人员将易于明白多种修改和适应。\n\n[0051]以上对本发明实施例所提供的一种反光电路板及其制作方法进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。在每个示例性实施方式中对特征或方面的描述通常应被视作适用于其他示例性实施例中的类似特征或方面。尽管参考示例性实施例描述了本发明，但可建议所属领域的技术人员进行各种变化和更改。本发明意图涵盖所附权利要求书的范围内的这些变化和更改。');
INSERT INTO `os_patent_instruction_text` VALUES (10650, 23704, '技术领域\n\n[0001]本申请涉及一种显示技术，特别涉及一种背光模组及显示装置。\n\n背景技术\n\n[0002]随着Mini LED技术的发展，Mini LED面光源的应用领域越来越多，也得到了越来越多的应用。\n\n[0003]现阶段Mini LED面光源显示装置基本架构(如图1)包括显示面板、光学结构层及Mini LED面光源，其中Mini LED面光源包括封框胶(含有黄色荧光粉)、Mini LED蓝光芯片、面光源基板。\n\n[0004]但是，该种Mini LED面光源发出的单种颜色光的部分需要经过黄色荧光粉，形成杂光，导致其色彩饱和度较低。\n\n发明内容\n\n[0005]本申请实施例提供一种背光模组及显示装置，以解决现有的Mini LED面光源发出单种颜色光时容易形成杂光，从而降低该颜色饱和度的技术问题。\n\n[0006]本申请实施例提供一种背光模组，其包括：\n\n[0007]基板；\n\n[0008]Mini LED芯片，用于发光，设置在所述基板上，所述Mini LED芯片之间间隔设置，所述Mini LED芯片包括第一LED芯片、第二LED芯片、第三LED芯片和第四LED芯片，所述第一LED芯片发红光，所述第二LED芯片发绿光，所述第三LED芯片发蓝光，所述第四LED芯片发黄光；\n\n[0009]封框胶，为透明状，设置在所述基板上并覆盖封装所述Mini LED芯片；以及\n\n[0010]光学膜片结构，用于将所述Mini LED芯片发出的光线进行扩散和增亮，设置在所述封框胶上。\n\n[0011]在本申请的背光模组中，一所述第一LED芯片、一第二LED芯片、一第三LED芯片和一第四LED芯片横向或纵向并排设置构成一重复单元。\n\n[0012]在本申请的背光模组中，一所述第一LED芯片、一第二LED芯片、一第三LED芯片和一第四LED芯片两两并排设置构成一重复单元。\n\n[0013]在本申请的背光模组中，所述重复单元呈正方形状。\n\n[0014]在本申请的背光模组中，多个所述重复单元呈矩阵式排布，所述第三LED芯片邻近设置在所述第四LED芯片的一侧。\n\n[0015]在本申请的背光模组中，所述第一LED芯片的发光面积小于所述第四LED芯片的发光面积，所述第四LED芯片的发光面积小于所述第二LED芯片的发光面积，所述第二LED芯片的发光面积小于所述第三LED芯片的发光面积。\n\n[0016]在本申请的背光模组中，所述光学膜片结构包括依次设置的第一光学膜层、第二光学膜层和第三光学膜层，所述第一光学膜层设置在所述封框胶上；\n\n[0017]所述第一光学膜层为光扩散膜层，所述第二光学膜层为光增亮膜层，所述第三光学膜层为光扩散膜层或为光扩散膜层和光增亮膜层的组合膜层。\n\n[0018]本申请还涉及一种显示装置，包括背光模组和设置在所述背光模组上的显示面板，所述背光模组包括：\n\n[0019]基板；\n\n[0020]Mini LED芯片，用于发光，设置在所述基板上，所述Mini LED芯片之间间隔设置，所述Mini LED芯片包括第一LED芯片、第二LED芯片、第三LED芯片和第四LED芯片，所述第一LED芯片发红光，所述第二LED芯片发绿光，所述第三LED芯片发蓝光，所述第四LED芯片发黄光；\n\n[0021]封框胶，为透明状，设置在所述基板上并覆盖封装所述Mini LED芯片；以及\n\n[0022]光学膜片结构，用于将所述Mini LED芯片发出的光线进行扩散和增亮，设置在所述封框胶上。\n\n[0023]在本申请的显示装置中，一所述第一LED芯片、一第二LED芯片、一第三LED芯片和一第四LED芯片两两并排设置构成一重复单元；多个所述重复单元呈矩阵式排布，所述第三LED芯片邻近设置在所述第四LED芯片的一侧。\n\n[0024]在本申请的显示装置中，一所述第一LED芯片、一第二LED芯片、一第三LED芯片和一第四LED芯片横向或纵向并排设置构成一重复单元；多个所述重复单元呈矩阵式排布，所述第三LED芯片邻近设置在所述第四LED芯片的一侧。\n\n[0025]在本申请的显示装置中，进一步的，所述重复单元呈正方形状。\n\n[0026]在本申请的显示装置中，所述第一LED芯片的发光面积小于所述第四LED芯片的发光面积，所述第四LED芯片的发光面积小于所述第二LED芯片的发光面积，所述第二LED芯片的发光面积小于所述第三LED芯片的发光面积。\n\n[0027]在本申请的显示装置中，所述光学膜片结构包括依次设置的第一光学膜层、第二光学膜层和第三光学膜层，所述第一光学膜层设置在所述封框胶上；\n\n[0028]所述第一光学膜层为光扩散膜层，所述第二光学膜层为光增亮膜层，所述第三光学膜层为光扩散膜层或为光扩散膜层和光增亮膜层的组合膜层。\n\n[0029]相较于现有技术的背光模组及显示装置，本申请的背光模组及显示装置通过第一/第二/第三/第四LED芯片的设置，节省了在封框胶中掺杂黄色荧光粉的步骤，且可通过激发第一/第二/第三/第四LED芯片发光，透过透明的封框胶降低了杂光的产生，进而提高了色彩的饱和度，同时具有色彩饱和度的切换功能；解决了现有的Mini LED面光源发出单种颜色光时容易形成杂光，从而降低该颜色饱和度的技术问题。\n\n附图说明\n\n[0030]为了更清楚地说明本申请实施例或现有技术中的技术方案，下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本申请的部分实施例，对于本领域普通技术人员而言，在不付出创造性劳动的前提下，还可以根据这些附图获取其他的附图。\n\n[0031]图1为现有技术的Mini LED面光源显示装置的结构示意图；\n\n[0032]图2为本申请的背光模组的第一实施例的结构示意图；\n\n[0033]图3为本申请的背光模组的第一实施例的Mini LED芯片的排布结构示意图；\n\n[0034]图4为本申请的背光模组的第二实施例的Mini LED芯片的排布结构示意图；\n\n[0035]图5为本申请的显示装置的实施例的Mini LED芯片的排布结构示意图。\n\n具体实施方式\n\n[0036]请参照附图中的图式，其中相同的组件符号代表相同的组件。以下的说明是基于所例示的本申请具体实施例，其不应被视为限制本申请未在此详述的其它具体实施例。\n\n[0037]请参照图2和图3，图2为本申请的背光模组的第一实施例的结构示意图；图3为本申请的背光模组的第一实施例的Mini LED芯片的排布结构示意图。本背光模组100的第一实施例，其包括基板11、Mini LED芯片12、封框胶13和光学模组结构14。\n\n[0038]Mini LED芯片12用于发光，设置在基板11上。Mini LED芯片12之间间隔设置。MiniLED芯片12包括第一LED芯片121、第二LED芯片122、第三LED芯片123和第四LED芯片124。第一LED芯片121发红光。第二LED芯片122发绿光。第三LED芯片123发蓝光。第四LED芯片124发黄光。\n\n[0039]封框胶13为透明状，其设置在基板11上并覆盖封装Mini LED芯片12。\n\n[0040]光学膜片结构14用于将Mini LED芯片12发出的光线进行扩散和增亮。光学膜片结构14设置在封框胶13上。\n\n[0041]本申请的背光模组100通过第一/第二/第三/第四LED芯片(121、122、123和124)的设置，节省了在封框胶13中掺杂黄色荧光粉的步骤，使得通过激发第一/第二/第三/第四LED芯片(121、122、123和124)发光，透过透明的封框胶13降低了杂光的产生。\n\n[0042]因为在现有技术中，发蓝光的芯片发出蓝色和封框胶中的黄色荧光粉发出的黄光进行混合，从而产生白光。但是由于封框胶中黄色荧光粉的分布并不均匀，且黄色荧光粉由于材质的问题，还会发出其他杂光。另外黄色荧光粉发出的黄色光的光量较蓝光小中，促使在混光后发出的光线并非纯白色。因此当该背光模组应用于显示装置时，导致显示装置显示的色彩饱和度偏低。\n\n[0043]而在本第一实施例中，封框胶13为透明状，降低了出现杂光的情况。当显示装置需要显示单色时，比如红/绿/蓝/黄，则背光模组100便可直接激发四种芯片的一种，利用单种芯片直接发光，为显示装置提供光源，提高了单色的色彩饱和度。\n\n[0044]当显示装置需要显示多种色彩时，背光模组100中的四种芯片可以不同形式的组合激发，并在混光中发出白光。比如可以激发第三LED芯片123和第四LED芯片124，使蓝光和黄光进行混合形成白光；也可以激发第一LED芯片121、第二LED芯片122和第三LED芯片123，使红光、绿光和蓝光进行混合形成白光。\n\n[0045]另外，还可以通过控制不同Mini LED芯片12的发光数量，以达到调节切换色彩饱和度的效果。\n\n[0046]在背光模组100的第一实施例中，一第一LED芯片121、一第二LED芯片122、一第三LED芯片123和一第四LED芯片124横向或纵向并排设置构成一重复单元12a。\n\n[0047]在本第一实施例中，重复单元12a中的四种LED芯片呈横向排布，排布的顺序依次为第一LED芯片121、第二LED芯片122、第三LED芯片123和第四LED芯片124，也可以是第二LED芯片122、第一LED芯片121、第三LED芯片123和第四LED芯片124，或第四LED芯片124、第三LED芯片123、第一LED芯片121和第二LED芯片122，等等。本第一实施例以第一种排布方式为例进行说明，但并不限于此。\n\n[0048]在背光模组100的第一实施例中，多个重复单元12a呈矩阵式排布。第三LED芯片123邻近设置在第四LED芯片124的一侧。矩阵式的排布，使得重复单元12a均匀的排布，提高了出光的均一性。另外，将第三LED芯片123邻近第四LED芯片124设置，使得蓝光和黄色可以快速的进行混光，提高出光效率，而且将二者靠近设置，便于蓝光和黄色的充分混合，形成更为纯粹的白色。进而提高显示装置的色彩饱和度。\n\n[0049]在背光模组100的第一实施例中，第一LED芯片121的发光面积小于第四LED芯片124的发光面积。第四LED芯片124的发光面积小于第二LED芯片122的发光面积。第二LED芯片122的发光面积小于第三LED芯片123的发光面积。\n\n[0050]由于在相同面积的条件下，第一LED芯片121的发光亮度大于第四LED芯片124的发光亮度，第四LED芯片124的发光亮度大于第二LED芯片122的发光亮度，第二LED芯片122的发光亮度大于第三LED芯片123的发光亮度。因此为了提高背光模组100的第一实施例中发光亮度的均一性，将第一LED芯片121的发光面积设置为小于第四LED芯片124的发光面积。第四LED芯片124的发光面积设置为小于第二LED芯片122的发光面积。第二LED芯片122的发光面积设置为小于第三LED芯片123的发光面积。\n\n[0051]在背光模组100的第一实施例中，光学膜片结构14包括依次设置的第一光学膜层141、第二光学膜层142和第三光学膜层143。第一光学膜层141设置在封框胶13上。\n\n[0052]第一光学膜层141为光扩散膜层。第二光学膜层142为光增亮膜层。第三光学膜层143为光扩散膜层或为光扩散膜层和光增亮膜层的组合膜层。\n\n[0053]第一光学膜层141用于将Mini LED芯片12发出的光线进行扩散处理，扩大了光线的发射角度，且在混光时，使得光线的混合更为充分，提高了混光效果。\n\n[0054]第二光学膜层142用于将经过扩散处理的光线进行亮度提高处理，以提升背光模组100的发光亮度。\n\n[0055]第三光学膜层143用于将增亮后的光线再次进行扩散或者进行扩散和增亮处理，以进一步扩大光线的发光角度和提高混光效果，还可进一步提高整体光源的亮度。\n\n[0056]在一些实施例中，第四LED芯片124和第三LED芯片123的出光面为凹面。这样的设置，扩大第三/第四LED芯片的发光角度，提高了混光效果。当第一/第二LED芯片的出光面也可以是凹面。\n\n[0057]可选的，Mini LED芯片的凹面为凹球面，使得扩散的角度更为均衡。\n\n[0058]可选的，Mini LED芯片的凹面为凹弧面，以使Mini LED芯片的发出光线大部分向相邻的不同LED芯片的方向扩散，以达到提高混光效果的目的。\n\n[0059]请参照图4，图4为本申请的背光模组的第二实施例的Mini LED芯片的排布结构示意图。在背光模组的第二实施例中，本实施例和第一实施例的不同之处在于：一第一LED芯片221、一第二LED芯片222、一第三LED芯片223和一第四LED芯片224两两并排设置构成一重复单元22a。\n\n[0060]进一步的，重复单元22a呈正方形状。\n\n[0061]这样的设置，缩小了Mini LED芯片之间的距离，提高了混光效果。\n\n[0062]请参照图5，图5为本申请的显示装置的实施例的Mini LED芯片的排布结构示意图。本申请还涉及一种显示装置1000，其包括背光模组100和设置在背光模组100上的显示面板200。背光模组100包括基板11、Mini LED芯片12、封框胶13和光学模组结构14。\n\n[0063]Mini LED芯片12用于发光，设置在基板11上。Mini LED芯片12之间间隔设置。MiniLED芯片12包括第一LED芯片121、第二LED芯片122、第三LED芯片123和第四LED芯片124。第一LED芯片121发红光。第二LED芯片122发绿光。第三LED芯片123发蓝光。第四LED芯片124发黄光。\n\n[0064]封框胶13为透明状，其设置在基板11上并覆盖封装Mini LED芯片12。\n\n[0065]光学膜片结构14用于将Mini LED芯片12发出的光线进行扩散和增亮。光学膜片结构14设置在封框胶13上。\n\n[0066]本申请的显示装置1000通过第一/第二/第三/第四LED芯片(121、122、123和124)的设置，节省了在封框胶13中掺杂黄色荧光粉的步骤，使得通过激发第一/第二/第三/第四LED芯片(121、122、123和124)发光，透过透明的封框胶13降低了杂光的产生，提高背光模组100的发光纯度，进而提高了显示装置1000的色彩饱和度。\n\n[0067]在本实施例中，封框胶13为透明状，降低了出现杂光的情况。当显示装置1000需要显示单色时，比如红/绿/蓝/黄，则背光模组100便可直接激发四种芯片的一种，利用单种芯片直接发光，为显示装置提供光源，提高了单色的色彩饱和度。\n\n[0068]当显示装置1000需要显示多种色彩时，背光模组100中的四种芯片可以不同形式的组合激发，并在混光中发出白光。比如可以激发第三LED芯片123和第四LED芯片124，使蓝光和黄光进行混合形成白光；也可以激发第一LED芯片121、第二LED芯片122和第三LED芯片123，使红光、绿光和蓝光进行混合形成白光。\n\n[0069]另外，还可以通过控制不同Mini LED芯片12的发光数量，以达到调节切换色彩饱和度的效果。\n\n[0070]在本实施例中，一第一LED芯片121、一第二LED芯片122、一第三LED芯片123和一第四LED芯片124横向或纵向并排设置构成一重复单元12a。\n\n[0071]在本实施例中，重复单元12a中的四种LED芯片呈横向排布，排布的顺序依次为第一LED芯片121、第二LED芯片122、第三LED芯片123和第四LED芯片124，也可以是第二LED芯片122、第一LED芯片121、第三LED芯片123和第四LED芯片124，或第四LED芯片124、第三LED芯片123、第一LED芯片121和第二LED芯片122，等等。本实施例以第一种排布方式为例进行说明，但并不限于此。\n\n[0072]在显示装置1000的实施例中，多个重复单元12a呈矩阵式排布。第三LED芯片123邻近设置在第四LED芯片124的一侧。矩阵式的排布，使得重复单元12a均匀的排布，提高了出光的均一性。另外，将第三LED芯片123邻近第四LED芯片124设置，使得蓝光和黄色可以快速的进行混光，提高出光效率，而且将二者靠近设置，便于蓝光和黄色的充分混合，形成更为纯粹的白色。进而提高显示装置的色彩饱和度。\n\n[0073]在显示装置1000的实施例中，第一LED芯片121的发光面积小于第四LED芯片124的发光面积。第四LED芯片124的发光面积小于第二LED芯片122的发光面积。第二LED芯片122的发光面积小于第三LED芯片123的发光面积。\n\n[0074]由于在相同面积的条件下，第一LED芯片121的发光亮度大于第四LED芯片124的发光亮度，第四LED芯片124的发光亮度大于第二LED芯片122的发光亮度，第二LED芯片122的发光亮度大于第三LED芯片123的发光亮度。因此为了提高背光模组100的第一实施例中发光亮度的均一性，将第一LED芯片121的发光面积设置为小于第四LED芯片124的发光面积。第四LED芯片124的发光面积设置为小于第二LED芯片122的发光面积。第二LED芯片122的发光面积设置为小于第三LED芯片123的发光面积。\n\n[0075]显示装置1000的实施例中，光学膜片结构14包括依次设置的第一光学膜层141、第二光学膜层142和第三光学膜层143。第一光学膜层141设置在封框胶13上。\n\n[0076]第一光学膜层141为光扩散膜层。第二光学膜层142为光增亮膜层。第三光学膜层143为光扩散膜层或为光扩散膜层和光增亮膜层的组合膜层。\n\n[0077]第一光学膜层141用于将Mini LED芯片12发出的光线进行扩散处理，扩大了光线的发射角度，且在混光时，使得光线的混合更为充分，提高了混光效果。\n\n[0078]第二光学膜层142用于将经过扩散处理的光线进行亮度提高处理，以提升背光模组100的发光亮度。\n\n[0079]第三光学膜层143用于将增亮后的光线再次进行扩散或者进行扩散和增亮处理，以进一步扩大光线的发光角度和提高混光效果，还可进一步提高整体光源的亮度。\n\n[0080]在一些实施例中，第四LED芯片和第三LED芯片的出光面为凹面。这样的设置，扩大第三/第四LED芯片的发光角度，提高了混光效果。当第一/第二LED芯片的出光面也可以是凹面。\n\n[0081]可选的，Mini LED芯片的凹面为凹球面，使得扩散的角度更为均衡。\n\n[0082]可选的，Mini LED芯片的凹面为凹弧面，以使Mini LED芯片的发出光线大部分向相邻的不同LED芯片的方向扩散，以达到提高混光效果的目的。\n\n[0083]相较于现有技术的背光模组及显示装置，本申请的背光模组及显示装置通过第一/第二/第三/第四LED芯片的设置，节省了在封框胶中掺杂黄色荧光粉的步骤，且可通过激发第一/第二/第三/第四LED芯片发光，透过透明的封框胶降低了杂光的产生，进而提高了色彩的饱和度，同时具有色彩饱和度的切换功能；解决了现有的Mini LED面光源发出单种颜色光时容易形成杂光，从而降低该颜色饱和度的技术问题。\n\n[0084]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。', '技术领域\n\n[0001]本申请涉及一种显示技术，特别涉及一种背光模组及显示装置。\n\n背景技术\n\n[0002]随着Mini LED技术的发展，Mini LED面光源的应用领域越来越多，也得到了越来越多的应用。\n\n[0003]现阶段Mini LED面光源显示装置基本架构(如图1)包括显示面板、光学结构层及Mini LED面光源，其中Mini LED面光源包括封框胶(含有黄色荧光粉)、Mini LED蓝光芯片、面光源基板。\n\n[0004]但是，该种Mini LED面光源发出的单种颜色光的部分需要经过黄色荧光粉，形成杂光，导致其色彩饱和度较低。\n\n发明内容\n\n[0005]本申请实施例提供一种背光模组及显示装置，以解决现有的Mini LED面光源发出单种颜色光时容易形成杂光，从而降低该颜色饱和度的技术问题。\n\n[0006]本申请实施例提供一种背光模组，其包括：\n\n[0007]基板；\n\n[0008]Mini LED芯片，用于发光，设置在所述基板上，所述Mini LED芯片之间间隔设置，所述Mini LED芯片包括第一LED芯片、第二LED芯片、第三LED芯片和第四LED芯片，所述第一LED芯片发红光，所述第二LED芯片发绿光，所述第三LED芯片发蓝光，所述第四LED芯片发黄光；\n\n[0009]封框胶，为透明状，设置在所述基板上并覆盖封装所述Mini LED芯片；以及\n\n[0010]光学膜片结构，用于将所述Mini LED芯片发出的光线进行扩散和增亮，设置在所述封框胶上。\n\n[0011]在本申请的背光模组中，一所述第一LED芯片、一第二LED芯片、一第三LED芯片和一第四LED芯片横向或纵向并排设置构成一重复单元。\n\n[0012]在本申请的背光模组中，一所述第一LED芯片、一第二LED芯片、一第三LED芯片和一第四LED芯片两两并排设置构成一重复单元。\n\n[0013]在本申请的背光模组中，所述重复单元呈正方形状。\n\n[0014]在本申请的背光模组中，多个所述重复单元呈矩阵式排布，所述第三LED芯片邻近设置在所述第四LED芯片的一侧。\n\n[0015]在本申请的背光模组中，所述第一LED芯片的发光面积小于所述第四LED芯片的发光面积，所述第四LED芯片的发光面积小于所述第二LED芯片的发光面积，所述第二LED芯片的发光面积小于所述第三LED芯片的发光面积。\n\n[0016]在本申请的背光模组中，所述光学膜片结构包括依次设置的第一光学膜层、第二光学膜层和第三光学膜层，所述第一光学膜层设置在所述封框胶上；\n\n[0017]所述第一光学膜层为光扩散膜层，所述第二光学膜层为光增亮膜层，所述第三光学膜层为光扩散膜层或为光扩散膜层和光增亮膜层的组合膜层。\n\n[0018]本申请还涉及一种显示装置，包括背光模组和设置在所述背光模组上的显示面板，所述背光模组包括：\n\n[0019]基板；\n\n[0020]Mini LED芯片，用于发光，设置在所述基板上，所述Mini LED芯片之间间隔设置，所述Mini LED芯片包括第一LED芯片、第二LED芯片、第三LED芯片和第四LED芯片，所述第一LED芯片发红光，所述第二LED芯片发绿光，所述第三LED芯片发蓝光，所述第四LED芯片发黄光；\n\n[0021]封框胶，为透明状，设置在所述基板上并覆盖封装所述Mini LED芯片；以及\n\n[0022]光学膜片结构，用于将所述Mini LED芯片发出的光线进行扩散和增亮，设置在所述封框胶上。\n\n[0023]在本申请的显示装置中，一所述第一LED芯片、一第二LED芯片、一第三LED芯片和一第四LED芯片两两并排设置构成一重复单元；多个所述重复单元呈矩阵式排布，所述第三LED芯片邻近设置在所述第四LED芯片的一侧。\n\n[0024]在本申请的显示装置中，一所述第一LED芯片、一第二LED芯片、一第三LED芯片和一第四LED芯片横向或纵向并排设置构成一重复单元；多个所述重复单元呈矩阵式排布，所述第三LED芯片邻近设置在所述第四LED芯片的一侧。\n\n[0025]在本申请的显示装置中，进一步的，所述重复单元呈正方形状。\n\n[0026]在本申请的显示装置中，所述第一LED芯片的发光面积小于所述第四LED芯片的发光面积，所述第四LED芯片的发光面积小于所述第二LED芯片的发光面积，所述第二LED芯片的发光面积小于所述第三LED芯片的发光面积。\n\n[0027]在本申请的显示装置中，所述光学膜片结构包括依次设置的第一光学膜层、第二光学膜层和第三光学膜层，所述第一光学膜层设置在所述封框胶上；\n\n[0028]所述第一光学膜层为光扩散膜层，所述第二光学膜层为光增亮膜层，所述第三光学膜层为光扩散膜层或为光扩散膜层和光增亮膜层的组合膜层。\n\n[0029]相较于现有技术的背光模组及显示装置，本申请的背光模组及显示装置通过第一/第二/第三/第四LED芯片的设置，节省了在封框胶中掺杂黄色荧光粉的步骤，且可通过激发第一/第二/第三/第四LED芯片发光，透过透明的封框胶降低了杂光的产生，进而提高了色彩的饱和度，同时具有色彩饱和度的切换功能；解决了现有的Mini LED面光源发出单种颜色光时容易形成杂光，从而降低该颜色饱和度的技术问题。\n\n附图说明\n\n[0030]为了更清楚地说明本申请实施例或现有技术中的技术方案，下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本申请的部分实施例，对于本领域普通技术人员而言，在不付出创造性劳动的前提下，还可以根据这些附图获取其他的附图。\n\n[0031]图1为现有技术的Mini LED面光源显示装置的结构示意图；\n\n[0032]图2为本申请的背光模组的第一实施例的结构示意图；\n\n[0033]图3为本申请的背光模组的第一实施例的Mini LED芯片的排布结构示意图；\n\n[0034]图4为本申请的背光模组的第二实施例的Mini LED芯片的排布结构示意图；\n\n[0035]图5为本申请的显示装置的实施例的Mini LED芯片的排布结构示意图。\n\n具体实施方式\n\n[0036]请参照附图中的图式，其中相同的组件符号代表相同的组件。以下的说明是基于所例示的本申请具体实施例，其不应被视为限制本申请未在此详述的其它具体实施例。\n\n[0037]请参照图2和图3，图2为本申请的背光模组的第一实施例的结构示意图；图3为本申请的背光模组的第一实施例的Mini LED芯片的排布结构示意图。本背光模组100的第一实施例，其包括基板11、Mini LED芯片12、封框胶13和光学模组结构14。\n\n[0038]Mini LED芯片12用于发光，设置在基板11上。Mini LED芯片12之间间隔设置。MiniLED芯片12包括第一LED芯片121、第二LED芯片122、第三LED芯片123和第四LED芯片124。第一LED芯片121发红光。第二LED芯片122发绿光。第三LED芯片123发蓝光。第四LED芯片124发黄光。\n\n[0039]封框胶13为透明状，其设置在基板11上并覆盖封装Mini LED芯片12。\n\n[0040]光学膜片结构14用于将Mini LED芯片12发出的光线进行扩散和增亮。光学膜片结构14设置在封框胶13上。\n\n[0041]本申请的背光模组100通过第一/第二/第三/第四LED芯片(121、122、123和124)的设置，节省了在封框胶13中掺杂黄色荧光粉的步骤，使得通过激发第一/第二/第三/第四LED芯片(121、122、123和124)发光，透过透明的封框胶13降低了杂光的产生。\n\n[0042]因为在现有技术中，发蓝光的芯片发出蓝色和封框胶中的黄色荧光粉发出的黄光进行混合，从而产生白光。但是由于封框胶中黄色荧光粉的分布并不均匀，且黄色荧光粉由于材质的问题，还会发出其他杂光。另外黄色荧光粉发出的黄色光的光量较蓝光小中，促使在混光后发出的光线并非纯白色。因此当该背光模组应用于显示装置时，导致显示装置显示的色彩饱和度偏低。\n\n[0043]而在本第一实施例中，封框胶13为透明状，降低了出现杂光的情况。当显示装置需要显示单色时，比如红/绿/蓝/黄，则背光模组100便可直接激发四种芯片的一种，利用单种芯片直接发光，为显示装置提供光源，提高了单色的色彩饱和度。\n\n[0044]当显示装置需要显示多种色彩时，背光模组100中的四种芯片可以不同形式的组合激发，并在混光中发出白光。比如可以激发第三LED芯片123和第四LED芯片124，使蓝光和黄光进行混合形成白光；也可以激发第一LED芯片121、第二LED芯片122和第三LED芯片123，使红光、绿光和蓝光进行混合形成白光。\n\n[0045]另外，还可以通过控制不同Mini LED芯片12的发光数量，以达到调节切换色彩饱和度的效果。\n\n[0046]在背光模组100的第一实施例中，一第一LED芯片121、一第二LED芯片122、一第三LED芯片123和一第四LED芯片124横向或纵向并排设置构成一重复单元12a。\n\n[0047]在本第一实施例中，重复单元12a中的四种LED芯片呈横向排布，排布的顺序依次为第一LED芯片121、第二LED芯片122、第三LED芯片123和第四LED芯片124，也可以是第二LED芯片122、第一LED芯片121、第三LED芯片123和第四LED芯片124，或第四LED芯片124、第三LED芯片123、第一LED芯片121和第二LED芯片122，等等。本第一实施例以第一种排布方式为例进行说明，但并不限于此。\n\n[0048]在背光模组100的第一实施例中，多个重复单元12a呈矩阵式排布。第三LED芯片123邻近设置在第四LED芯片124的一侧。矩阵式的排布，使得重复单元12a均匀的排布，提高了出光的均一性。另外，将第三LED芯片123邻近第四LED芯片124设置，使得蓝光和黄色可以快速的进行混光，提高出光效率，而且将二者靠近设置，便于蓝光和黄色的充分混合，形成更为纯粹的白色。进而提高显示装置的色彩饱和度。\n\n[0049]在背光模组100的第一实施例中，第一LED芯片121的发光面积小于第四LED芯片124的发光面积。第四LED芯片124的发光面积小于第二LED芯片122的发光面积。第二LED芯片122的发光面积小于第三LED芯片123的发光面积。\n\n[0050]由于在相同面积的条件下，第一LED芯片121的发光亮度大于第四LED芯片124的发光亮度，第四LED芯片124的发光亮度大于第二LED芯片122的发光亮度，第二LED芯片122的发光亮度大于第三LED芯片123的发光亮度。因此为了提高背光模组100的第一实施例中发光亮度的均一性，将第一LED芯片121的发光面积设置为小于第四LED芯片124的发光面积。第四LED芯片124的发光面积设置为小于第二LED芯片122的发光面积。第二LED芯片122的发光面积设置为小于第三LED芯片123的发光面积。\n\n[0051]在背光模组100的第一实施例中，光学膜片结构14包括依次设置的第一光学膜层141、第二光学膜层142和第三光学膜层143。第一光学膜层141设置在封框胶13上。\n\n[0052]第一光学膜层141为光扩散膜层。第二光学膜层142为光增亮膜层。第三光学膜层143为光扩散膜层或为光扩散膜层和光增亮膜层的组合膜层。\n\n[0053]第一光学膜层141用于将Mini LED芯片12发出的光线进行扩散处理，扩大了光线的发射角度，且在混光时，使得光线的混合更为充分，提高了混光效果。\n\n[0054]第二光学膜层142用于将经过扩散处理的光线进行亮度提高处理，以提升背光模组100的发光亮度。\n\n[0055]第三光学膜层143用于将增亮后的光线再次进行扩散或者进行扩散和增亮处理，以进一步扩大光线的发光角度和提高混光效果，还可进一步提高整体光源的亮度。\n\n[0056]在一些实施例中，第四LED芯片124和第三LED芯片123的出光面为凹面。这样的设置，扩大第三/第四LED芯片的发光角度，提高了混光效果。当第一/第二LED芯片的出光面也可以是凹面。\n\n[0057]可选的，Mini LED芯片的凹面为凹球面，使得扩散的角度更为均衡。\n\n[0058]可选的，Mini LED芯片的凹面为凹弧面，以使Mini LED芯片的发出光线大部分向相邻的不同LED芯片的方向扩散，以达到提高混光效果的目的。\n\n[0059]请参照图4，图4为本申请的背光模组的第二实施例的Mini LED芯片的排布结构示意图。在背光模组的第二实施例中，本实施例和第一实施例的不同之处在于：一第一LED芯片221、一第二LED芯片222、一第三LED芯片223和一第四LED芯片224两两并排设置构成一重复单元22a。\n\n[0060]进一步的，重复单元22a呈正方形状。\n\n[0061]这样的设置，缩小了Mini LED芯片之间的距离，提高了混光效果。\n\n[0062]请参照图5，图5为本申请的显示装置的实施例的Mini LED芯片的排布结构示意图。本申请还涉及一种显示装置1000，其包括背光模组100和设置在背光模组100上的显示面板200。背光模组100包括基板11、Mini LED芯片12、封框胶13和光学模组结构14。\n\n[0063]Mini LED芯片12用于发光，设置在基板11上。Mini LED芯片12之间间隔设置。MiniLED芯片12包括第一LED芯片121、第二LED芯片122、第三LED芯片123和第四LED芯片124。第一LED芯片121发红光。第二LED芯片122发绿光。第三LED芯片123发蓝光。第四LED芯片124发黄光。\n\n[0064]封框胶13为透明状，其设置在基板11上并覆盖封装Mini LED芯片12。\n\n[0065]光学膜片结构14用于将Mini LED芯片12发出的光线进行扩散和增亮。光学膜片结构14设置在封框胶13上。\n\n[0066]本申请的显示装置1000通过第一/第二/第三/第四LED芯片(121、122、123和124)的设置，节省了在封框胶13中掺杂黄色荧光粉的步骤，使得通过激发第一/第二/第三/第四LED芯片(121、122、123和124)发光，透过透明的封框胶13降低了杂光的产生，提高背光模组100的发光纯度，进而提高了显示装置1000的色彩饱和度。\n\n[0067]在本实施例中，封框胶13为透明状，降低了出现杂光的情况。当显示装置1000需要显示单色时，比如红/绿/蓝/黄，则背光模组100便可直接激发四种芯片的一种，利用单种芯片直接发光，为显示装置提供光源，提高了单色的色彩饱和度。\n\n[0068]当显示装置1000需要显示多种色彩时，背光模组100中的四种芯片可以不同形式的组合激发，并在混光中发出白光。比如可以激发第三LED芯片123和第四LED芯片124，使蓝光和黄光进行混合形成白光；也可以激发第一LED芯片121、第二LED芯片122和第三LED芯片123，使红光、绿光和蓝光进行混合形成白光。\n\n[0069]另外，还可以通过控制不同Mini LED芯片12的发光数量，以达到调节切换色彩饱和度的效果。\n\n[0070]在本实施例中，一第一LED芯片121、一第二LED芯片122、一第三LED芯片123和一第四LED芯片124横向或纵向并排设置构成一重复单元12a。\n\n[0071]在本实施例中，重复单元12a中的四种LED芯片呈横向排布，排布的顺序依次为第一LED芯片121、第二LED芯片122、第三LED芯片123和第四LED芯片124，也可以是第二LED芯片122、第一LED芯片121、第三LED芯片123和第四LED芯片124，或第四LED芯片124、第三LED芯片123、第一LED芯片121和第二LED芯片122，等等。本实施例以第一种排布方式为例进行说明，但并不限于此。\n\n[0072]在显示装置1000的实施例中，多个重复单元12a呈矩阵式排布。第三LED芯片123邻近设置在第四LED芯片124的一侧。矩阵式的排布，使得重复单元12a均匀的排布，提高了出光的均一性。另外，将第三LED芯片123邻近第四LED芯片124设置，使得蓝光和黄色可以快速的进行混光，提高出光效率，而且将二者靠近设置，便于蓝光和黄色的充分混合，形成更为纯粹的白色。进而提高显示装置的色彩饱和度。\n\n[0073]在显示装置1000的实施例中，第一LED芯片121的发光面积小于第四LED芯片124的发光面积。第四LED芯片124的发光面积小于第二LED芯片122的发光面积。第二LED芯片122的发光面积小于第三LED芯片123的发光面积。\n\n[0074]由于在相同面积的条件下，第一LED芯片121的发光亮度大于第四LED芯片124的发光亮度，第四LED芯片124的发光亮度大于第二LED芯片122的发光亮度，第二LED芯片122的发光亮度大于第三LED芯片123的发光亮度。因此为了提高背光模组100的第一实施例中发光亮度的均一性，将第一LED芯片121的发光面积设置为小于第四LED芯片124的发光面积。第四LED芯片124的发光面积设置为小于第二LED芯片122的发光面积。第二LED芯片122的发光面积设置为小于第三LED芯片123的发光面积。\n\n[0075]显示装置1000的实施例中，光学膜片结构14包括依次设置的第一光学膜层141、第二光学膜层142和第三光学膜层143。第一光学膜层141设置在封框胶13上。\n\n[0076]第一光学膜层141为光扩散膜层。第二光学膜层142为光增亮膜层。第三光学膜层143为光扩散膜层或为光扩散膜层和光增亮膜层的组合膜层。\n\n[0077]第一光学膜层141用于将Mini LED芯片12发出的光线进行扩散处理，扩大了光线的发射角度，且在混光时，使得光线的混合更为充分，提高了混光效果。\n\n[0078]第二光学膜层142用于将经过扩散处理的光线进行亮度提高处理，以提升背光模组100的发光亮度。\n\n[0079]第三光学膜层143用于将增亮后的光线再次进行扩散或者进行扩散和增亮处理，以进一步扩大光线的发光角度和提高混光效果，还可进一步提高整体光源的亮度。\n\n[0080]在一些实施例中，第四LED芯片和第三LED芯片的出光面为凹面。这样的设置，扩大第三/第四LED芯片的发光角度，提高了混光效果。当第一/第二LED芯片的出光面也可以是凹面。\n\n[0081]可选的，Mini LED芯片的凹面为凹球面，使得扩散的角度更为均衡。\n\n[0082]可选的，Mini LED芯片的凹面为凹弧面，以使Mini LED芯片的发出光线大部分向相邻的不同LED芯片的方向扩散，以达到提高混光效果的目的。\n\n[0083]相较于现有技术的背光模组及显示装置，本申请的背光模组及显示装置通过第一/第二/第三/第四LED芯片的设置，节省了在封框胶中掺杂黄色荧光粉的步骤，且可通过激发第一/第二/第三/第四LED芯片发光，透过透明的封框胶降低了杂光的产生，进而提高了色彩的饱和度，同时具有色彩饱和度的切换功能；解决了现有的Mini LED面光源发出单种颜色光时容易形成杂光，从而降低该颜色饱和度的技术问题。\n\n[0084]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10651, 23705, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种直下式背光模组及其制作方法。\n\n背景技术\n\n[0002]薄膜晶体管(Thin Film Transistor，TFT)是目前液晶显示装置(Liquid CrystalDisplay，LCD)和有源矩阵驱动式有机电致发光显示装置(Active Matrix Organic Light-Emitting Diode，AMOLED)中的主要驱动元件，直接关系平板显示装置的显示性能。\n\n[0003]现有市场上的液晶显示器大部分为背光型液晶显示器，其包括液晶显示面板及背光模组(backlight module)。液晶显示面板的工作原理是在薄膜晶体管阵列基板(ThinFilm Transistor Array Substrate，TFT Array Substrate)与彩色滤光片(ColorFilter，CF)基板之间灌入液晶分子，并在两片基板上分别施加像素电压和公共电压，通过像素电压和公共电压之间形成的电场控制液晶分子的旋转方向，以将背光模组的光线透射出来产生画面。\n\n[0004]由于液晶显示面板本身不发光，需要借由背光模组提供的光源来正常显示影像，因此，背光模组成为液晶显示装置的关键组件之一。背光模组依照光源入射位置的不同分成侧入式背光模组与直下式背光模组两种。直下式背光模组是将背光源例如阴极萤光灯管(Cold Cathode Fluorescent Lamp，CCFL)或发光二极管(Light Emitting Diode，LED)光源设置在液晶显示面板后方，光线经扩散板均匀化后形成面光源提供给液晶显示面板。\n\n[0005]迷你发光二极管(Mini-LED)是一种尺寸在200微米以下的小型LED，将Mini-LED应用到背光模组中，因其可实现超薄，多分区同时又是利用小尺寸芯片产品，能够在现实效果上媲美OLED产品，且在材料成本上又能够较OLED更有竞争优势而被提出使用。\n\n[0006]现有技术中通过采用固晶方式将迷你发光二极管固定于金属基印刷电路板(MCPCB板)，而后用于背光光源。虽然该种形式利用Mini-LED线宽(Pitch)小的特点实现小的光密度(OD)，从而达成薄型化设计，然而并没有改变传统的背光形态，且有相应的缺点无法克服。由于Mini-LED尺寸和Pitch均很小，如图1和图2所示，此时在MCPCB上采用传统结构固定连接器(connector)难以实现，单块灯板40’通常需要在MCPCB 10’(MCPCB为双面PCB板)的正面打件Mini-LED20’和走线，在背面打件连接器30’，同时现行Mini-LED邦定(bonding)限制，导致单块灯板40’尺寸有限，对于大尺寸机种，需求采用多灯板40’拼接方式实现，此时需将每块灯板40’的连接器30’外露在背板50’之外并连接驱动芯片70’，为保护外置的连接器30’需要设置整面型后盖60’，背光模组无法实现真正薄型化效果，同时外置的连接器30’易在组装过程中损坏，其对应外界走线复杂亦不利于背光模组组装。\n\n发明内容\n\n[0007]本发明的目的在于提供一种直下式背光模组，可以免除现有直下式背光模组中的连接器，实现直下式背光模组的薄型化。\n\n[0008]本发明的目的还在于提供一种直下式背光模组的制作方法，可以免除现有直下式背光模组中的连接器，实现直下式背光模组的薄型化。\n\n[0009]为实现上述目的，本发明提供了一种直下式背光模组，包括：背板以及设于所述背板上的多个灯板单元；\n\n[0010]所述灯板单元包括电路板、设于所述电路板上表面的多个迷你发光二极管以及设于所述电路板下表面并与多个迷你发光二极管均连接的外部连接端；\n\n[0011]所述背板面向灯板单元的一侧设有多个背板连接端；所述背板远离灯板单元的一侧设有与多个背板连接端均连接的背板外部连接端以及与所述背板外部连接端连接的驱动电路板；\n\n[0012]所述多个灯板单元的外部连接端分别与多个背板连接端一一对应连接。\n\n[0013]所述直下式背光模组还包括设于所述背板远离灯板单元的一侧并覆盖背板外部连接端及驱动电路板的后盖。\n\n[0014]所述背板的材料为金属、塑胶或玻璃。\n\n[0015]所述直下式背光模组还包括设于所述背板与多个背板连接端之间以及所述背板与背板外部连接端之间的绝缘层。\n\n[0016]本发明还提供一种直下式背光模组的制作方法，包括如下步骤：\n\n[0017]步骤S1、提供多个电路板，在所述多个电路板的上表面分别形成多个迷你发光二极管，在所述多个电路板的下表面分别形成与多个迷你发光二极管均连接的外部连接端，得到多个灯板单元；\n\n[0018]步骤S2、提供背板，在所述背板面向灯板单元的一侧形成多个背板连接端，在所述背板远离灯板单元的一侧形成多个背板连接端均连接的背板外部连接端以及与所述背板外部连接端连接的驱动电路板；\n\n[0019]步骤S3、将多个灯板单元的外部连接端分别与多个背板连接端通过回流焊接一一对应连接。\n\n[0020]所述直下式背光模组的制作方法还包括步骤S4、在所述背板远离灯板单元的一侧形成覆盖背板外部连接端及驱动电路板的后盖。\n\n[0021]所述背板的材料为金属、塑胶或玻璃。\n\n[0022]所述步骤S2中，在背板上通过贴附或压合的方法形成多个背板连接端及背板外部连接端。\n\n[0023]所述步骤S2中，还在所述背板与多个背板连接端之间以及所述背板与背板外部连接端之间通过蒸镀或涂布的方法形成绝缘层，在绝缘层上通过贴附或压合的方法形成多个背板连接端及背板外部连接端。\n\n[0024]所述直下式背光模组的制作方法还包括步骤S5、在所述多个灯板单元上方形成扩散板，在所述扩散板上方形成光学膜片组。\n\n[0025]本发明的有益效果：本发明的直下式背光模组包括：背板以及设于所述背板上的多个灯板单元；所述灯板单元包括电路板、设于所述电路板上表面的多个迷你发光二极管以及设于所述电路板下表面并与多个迷你发光二极管均连接的外部连接端；所述背板面向灯板单元的一侧设有多个背板连接端；所述背板远离灯板单元的一侧设有与多个背板连接端均连接的背板外部连接端以及与所述背板外部连接端连接的驱动电路板；所述多个灯板单元的外部连接端分别与多个背板连接端一一对应连接，可以免除现有直下式背光模组中的连接器，实现直下式背光模组的薄型化。本发明的直下式背光模组的制作方法，可以免除现有直下式背光模组中的连接器，实现直下式背光模组的薄型化。\n\n附图说明\n\n[0026]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0027]附图中，\n\n[0028]图1为现有的直下式背光模组的结构示意图；\n\n[0029]图2为现有的直下式背光模组的灯板的结构示意图；\n\n[0030]图3为本发明的直下式背光模组的结构示意图；\n\n[0031]图4为本发明的直下式背光模组的俯视图；\n\n[0032]图5为本发明的直下式背光模组的金属材料背板的示意图；\n\n[0033]图6为本发明的直下式背光模组的制作方法的流程图。\n\n具体实施方式\n\n[0034]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0035]请参阅图3及图4，本发明提供一种直下式背光模组，包括：背板10以及设于所述背板10上的多个灯板单元20；\n\n[0036]所述灯板单元20包括电路板21、设于所述电路板21上表面的多个迷你发光二极管22以及设于所述电路板21下表面并与多个迷你发光二极管22均连接的外部连接端23；\n\n[0037]所述背板10面向灯板单元20的一侧设有多个背板连接端11；所述背板10远离灯板单元20的一侧设有与多个背板连接端11均连接的背板外部连接端12以及与所述背板外部连接端12连接的驱动电路板13；\n\n[0038]所述多个灯板单元20的外部连接端23分别与多个背板连接端11一一对应连接。\n\n[0039]需要说明的是，本发明通过在背板10面向灯板单元20的一侧设有多个背板连接端11，在所述背板10远离灯板单元20的一侧设有与多个背板连接端11均连接的背板外部连接端12以及与所述背板外部连接端12连接的驱动电路板13，多个灯板单元20的外部连接端23分别与多个背板连接端11一一对应连接，通过驱动电路板13驱动多个灯板单元20的多个迷你发光二极管22发光，可以免除现有直下式背光模组中的连接器，实现直下式背光模组的薄型化。\n\n[0040]具体的，所述直下式背光模组还包括设于所述背板10远离灯板单元20的一侧并覆盖背板外部连接端12及驱动电路板13的后盖30，该后盖30不同于现有技术中需覆盖所有灯板40’的连接器30’整面型后盖60’，只需要覆盖一个背板外部连接端12和一个驱动电路板13，因此可以进一步实现直下式背光模组的薄型化。\n\n[0041]具体的，所述背板外部连接端12与多个背板连接端11通过多条金属走线连接。\n\n[0042]进一步的，所述多条金属走线分别穿过多个设于背板10上的通孔连接背板外部连接端12与多个背板连接端11，或者，所述多条金属走线从背板10的外部连接背板外部连接端12与多个背板连接端11。\n\n[0043]具体的，所述背板10的材料为金属、塑胶或玻璃。\n\n[0044]进一步的，当所述背板10的材料为塑胶或玻璃时，其本身具有绝缘特性，因此在背板10上通过贴附或压合的方法形成多个背板连接端11及背板外部连接端12。\n\n[0045]进一步的，请参阅图5，当所述背板10的材料为金属时，其本身具有导电特性，因此所述直下式背光模组还包括设于所述背板10与多个背板连接端11之间以及所述背板10与背板外部连接端12之间的绝缘层14。一般在背板10上通过蒸镀或涂布的方法形成绝缘层14，接着在绝缘层14上通过贴附或压合的方法形成多个背板连接端11及背板外部连接端12。\n\n[0046]具体的，所述电路板21为金属基印刷电路板或柔性电路板(FPC)。\n\n[0047]具体的，单个迷你发光二极管22的长度和宽度均不超过300mm。\n\n[0048]具体的，所述直下式背光模组还包括设于所述多个灯板单元20上的扩散板40以及设于所述扩散板40上的光学膜片组50。\n\n[0049]请参阅图6，基于上述直下式背光模组，本发明还提供直下式背光模组的制作方法，包括如下步骤：\n\n[0050]步骤S1、提供多个电路板21，在所述多个电路板21的上表面分别形成多个迷你发光二极管22，在所述多个电路板21的下表面分别形成与多个迷你发光二极管22均连接的外部连接端23，得到多个灯板单元20；\n\n[0051]步骤S2、提供背板10，在所述背板10面向灯板单元20的一侧形成多个背板连接端11，在所述背板10远离灯板单元20的一侧形成多个背板连接端11均连接的背板外部连接端12以及与所述背板外部连接端12连接的驱动电路板13；\n\n[0052]步骤S3、将多个灯板单元20的外部连接端23分别与多个背板连接端11通过回流焊接一一对应连接。\n\n[0053]需要说明的是，本发明通过在背板10面向灯板单元20的一侧形成多个背板连接端11，在所述背板10远离灯板单元20的一侧形成与多个背板连接端11均连接的背板外部连接端12以及与所述背板外部连接端12连接的驱动电路板13，将多个灯板单元20的外部连接端23分别与多个背板连接端11通过回流焊接一一对应连接，通过驱动电路板13驱动多个灯板单元20的多个迷你发光二极管22发光，可以免除现有直下式背光模组中的连接器，降低直下式背光模组组装难度，实现直下式背光模组的薄型化。\n\n[0054]具体的，所述直下式背光模组的制作方法还包括步骤S4、在所述背板10远离灯板单元20的一侧形成覆盖背板外部连接端12及驱动电路板13的后盖30。该后盖30不同于现有技术中需覆盖所有灯板40’的连接器30’整面型后盖60’，只需要覆盖一个背板外部连接端12和一个驱动电路板13，因此可以进一步实现直下式背光模组的薄型化。\n\n[0055]具体的，所述背板外部连接端12与多个背板连接端11通过多条金属走线连接。\n\n[0056]进一步的，所述多条金属走线分别穿过多个设于背板10上的通孔连接背板外部连接端12与多个背板连接端11，或者，所述多条金属走线从背板10的外部连接背板外部连接端12与多个背板连接端11。\n\n[0057]具体的，所述背板10的材料为金属、塑胶或玻璃。\n\n[0058]进一步的，当所述背板10的材料为塑胶或玻璃时，其本身具有绝缘特性，因此所述步骤S2中，在背板10上通过贴附或压合的方法形成多个背板连接端11及背板外部连接端12。\n\n[0059]进一步的，请参阅图5，当所述背板10的材料为金属时，其本身具有导电特性，因此所述步骤S2中，还在所述背板10与多个背板连接端11之间以及所述背板10与背板外部连接端12之间通过蒸镀或涂布的方法形成绝缘层14，在绝缘层14上通过贴附或压合的方法形成多个背板连接端11及背板外部连接端12。\n\n[0060]具体的，所述电路板21为金属基印刷电路板或柔性电路板(FPC)。\n\n[0061]具体的，单个迷你发光二极管22的长度和宽度均不超过300mm。\n\n[0062]具体的，所述直下式背光模组的制作方法还包括步骤S5、在所述多个灯板单元20上方形成扩散板40，在所述扩散板40上方形成光学膜片组50。\n\n[0063]综上所述，本发明的直下式背光模组包括：背板以及设于所述背板上的多个灯板单元；所述灯板单元包括电路板、设于所述电路板上表面的多个迷你发光二极管以及设于所述电路板下表面并与多个迷你发光二极管均连接的外部连接端；所述背板面向灯板单元的一侧设有多个背板连接端；所述背板远离灯板单元的一侧设有与多个背板连接端均连接的背板外部连接端以及与所述背板外部连接端连接的驱动电路板；所述多个灯板单元的外部连接端分别与多个背板连接端一一对应连接，可以免除现有直下式背光模组中的连接器，实现直下式背光模组的薄型化。本发明的直下式背光模组的制作方法，可以免除现有直下式背光模组中的连接器，实现直下式背光模组的薄型化。\n\n[0064]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种直下式背光模组及其制作方法。\n\n背景技术\n\n[0002]薄膜晶体管(Thin Film Transistor，TFT)是目前液晶显示装置(Liquid CrystalDisplay，LCD)和有源矩阵驱动式有机电致发光显示装置(Active Matrix Organic Light-Emitting Diode，AMOLED)中的主要驱动元件，直接关系平板显示装置的显示性能。\n\n[0003]现有市场上的液晶显示器大部分为背光型液晶显示器，其包括液晶显示面板及背光模组(backlight module)。液晶显示面板的工作原理是在薄膜晶体管阵列基板(ThinFilm Transistor Array Substrate，TFT Array Substrate)与彩色滤光片(ColorFilter，CF)基板之间灌入液晶分子，并在两片基板上分别施加像素电压和公共电压，通过像素电压和公共电压之间形成的电场控制液晶分子的旋转方向，以将背光模组的光线透射出来产生画面。\n\n[0004]由于液晶显示面板本身不发光，需要借由背光模组提供的光源来正常显示影像，因此，背光模组成为液晶显示装置的关键组件之一。背光模组依照光源入射位置的不同分成侧入式背光模组与直下式背光模组两种。直下式背光模组是将背光源例如阴极萤光灯管(Cold Cathode Fluorescent Lamp，CCFL)或发光二极管(Light Emitting Diode，LED)光源设置在液晶显示面板后方，光线经扩散板均匀化后形成面光源提供给液晶显示面板。\n\n[0005]迷你发光二极管(Mini-LED)是一种尺寸在200微米以下的小型LED，将Mini-LED应用到背光模组中，因其可实现超薄，多分区同时又是利用小尺寸芯片产品，能够在现实效果上媲美OLED产品，且在材料成本上又能够较OLED更有竞争优势而被提出使用。\n\n[0006]现有技术中通过采用固晶方式将迷你发光二极管固定于金属基印刷电路板(MCPCB板)，而后用于背光光源。虽然该种形式利用Mini-LED线宽(Pitch)小的特点实现小的光密度(OD)，从而达成薄型化设计，然而并没有改变传统的背光形态，且有相应的缺点无法克服。由于Mini-LED尺寸和Pitch均很小，如图1和图2所示，此时在MCPCB上采用传统结构固定连接器(connector)难以实现，单块灯板40’通常需要在MCPCB 10’(MCPCB为双面PCB板)的正面打件Mini-LED20’和走线，在背面打件连接器30’，同时现行Mini-LED邦定(bonding)限制，导致单块灯板40’尺寸有限，对于大尺寸机种，需求采用多灯板40’拼接方式实现，此时需将每块灯板40’的连接器30’外露在背板50’之外并连接驱动芯片70’，为保护外置的连接器30’需要设置整面型后盖60’，背光模组无法实现真正薄型化效果，同时外置的连接器30’易在组装过程中损坏，其对应外界走线复杂亦不利于背光模组组装。\n\n发明内容\n\n[0007]本发明的目的在于提供一种直下式背光模组，可以免除现有直下式背光模组中的连接器，实现直下式背光模组的薄型化。\n\n[0008]本发明的目的还在于提供一种直下式背光模组的制作方法，可以免除现有直下式背光模组中的连接器，实现直下式背光模组的薄型化。\n\n[0009]为实现上述目的，本发明提供了一种直下式背光模组，包括：背板以及设于所述背板上的多个灯板单元；\n\n[0010]所述灯板单元包括电路板、设于所述电路板上表面的多个迷你发光二极管以及设于所述电路板下表面并与多个迷你发光二极管均连接的外部连接端；\n\n[0011]所述背板面向灯板单元的一侧设有多个背板连接端；所述背板远离灯板单元的一侧设有与多个背板连接端均连接的背板外部连接端以及与所述背板外部连接端连接的驱动电路板；\n\n[0012]所述多个灯板单元的外部连接端分别与多个背板连接端一一对应连接。\n\n[0013]所述直下式背光模组还包括设于所述背板远离灯板单元的一侧并覆盖背板外部连接端及驱动电路板的后盖。\n\n[0014]所述背板的材料为金属、塑胶或玻璃。\n\n[0015]所述直下式背光模组还包括设于所述背板与多个背板连接端之间以及所述背板与背板外部连接端之间的绝缘层。\n\n[0016]本发明还提供一种直下式背光模组的制作方法，包括如下步骤：\n\n[0017]步骤S1、提供多个电路板，在所述多个电路板的上表面分别形成多个迷你发光二极管，在所述多个电路板的下表面分别形成与多个迷你发光二极管均连接的外部连接端，得到多个灯板单元；\n\n[0018]步骤S2、提供背板，在所述背板面向灯板单元的一侧形成多个背板连接端，在所述背板远离灯板单元的一侧形成多个背板连接端均连接的背板外部连接端以及与所述背板外部连接端连接的驱动电路板；\n\n[0019]步骤S3、将多个灯板单元的外部连接端分别与多个背板连接端通过回流焊接一一对应连接。\n\n[0020]所述直下式背光模组的制作方法还包括步骤S4、在所述背板远离灯板单元的一侧形成覆盖背板外部连接端及驱动电路板的后盖。\n\n[0021]所述背板的材料为金属、塑胶或玻璃。\n\n[0022]所述步骤S2中，在背板上通过贴附或压合的方法形成多个背板连接端及背板外部连接端。\n\n[0023]所述步骤S2中，还在所述背板与多个背板连接端之间以及所述背板与背板外部连接端之间通过蒸镀或涂布的方法形成绝缘层，在绝缘层上通过贴附或压合的方法形成多个背板连接端及背板外部连接端。\n\n[0024]所述直下式背光模组的制作方法还包括步骤S5、在所述多个灯板单元上方形成扩散板，在所述扩散板上方形成光学膜片组。\n\n[0025]本发明的有益效果：本发明的直下式背光模组包括：背板以及设于所述背板上的多个灯板单元；所述灯板单元包括电路板、设于所述电路板上表面的多个迷你发光二极管以及设于所述电路板下表面并与多个迷你发光二极管均连接的外部连接端；所述背板面向灯板单元的一侧设有多个背板连接端；所述背板远离灯板单元的一侧设有与多个背板连接端均连接的背板外部连接端以及与所述背板外部连接端连接的驱动电路板；所述多个灯板单元的外部连接端分别与多个背板连接端一一对应连接，可以免除现有直下式背光模组中的连接器，实现直下式背光模组的薄型化。本发明的直下式背光模组的制作方法，可以免除现有直下式背光模组中的连接器，实现直下式背光模组的薄型化。\n\n附图说明\n\n[0026]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0027]附图中，\n\n[0028]图1为现有的直下式背光模组的结构示意图；\n\n[0029]图2为现有的直下式背光模组的灯板的结构示意图；\n\n[0030]图3为本发明的直下式背光模组的结构示意图；\n\n[0031]图4为本发明的直下式背光模组的俯视图；\n\n[0032]图5为本发明的直下式背光模组的金属材料背板的示意图；\n\n[0033]图6为本发明的直下式背光模组的制作方法的流程图。\n\n具体实施方式\n\n[0034]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0035]请参阅图3及图4，本发明提供一种直下式背光模组，包括：背板10以及设于所述背板10上的多个灯板单元20；\n\n[0036]所述灯板单元20包括电路板21、设于所述电路板21上表面的多个迷你发光二极管22以及设于所述电路板21下表面并与多个迷你发光二极管22均连接的外部连接端23；\n\n[0037]所述背板10面向灯板单元20的一侧设有多个背板连接端11；所述背板10远离灯板单元20的一侧设有与多个背板连接端11均连接的背板外部连接端12以及与所述背板外部连接端12连接的驱动电路板13；\n\n[0038]所述多个灯板单元20的外部连接端23分别与多个背板连接端11一一对应连接。\n\n[0039]需要说明的是，本发明通过在背板10面向灯板单元20的一侧设有多个背板连接端11，在所述背板10远离灯板单元20的一侧设有与多个背板连接端11均连接的背板外部连接端12以及与所述背板外部连接端12连接的驱动电路板13，多个灯板单元20的外部连接端23分别与多个背板连接端11一一对应连接，通过驱动电路板13驱动多个灯板单元20的多个迷你发光二极管22发光，可以免除现有直下式背光模组中的连接器，实现直下式背光模组的薄型化。\n\n[0040]具体的，所述直下式背光模组还包括设于所述背板10远离灯板单元20的一侧并覆盖背板外部连接端12及驱动电路板13的后盖30，该后盖30不同于现有技术中需覆盖所有灯板40’的连接器30’整面型后盖60’，只需要覆盖一个背板外部连接端12和一个驱动电路板13，因此可以进一步实现直下式背光模组的薄型化。\n\n[0041]具体的，所述背板外部连接端12与多个背板连接端11通过多条金属走线连接。\n\n[0042]进一步的，所述多条金属走线分别穿过多个设于背板10上的通孔连接背板外部连接端12与多个背板连接端11，或者，所述多条金属走线从背板10的外部连接背板外部连接端12与多个背板连接端11。\n\n[0043]具体的，所述背板10的材料为金属、塑胶或玻璃。\n\n[0044]进一步的，当所述背板10的材料为塑胶或玻璃时，其本身具有绝缘特性，因此在背板10上通过贴附或压合的方法形成多个背板连接端11及背板外部连接端12。\n\n[0045]进一步的，请参阅图5，当所述背板10的材料为金属时，其本身具有导电特性，因此所述直下式背光模组还包括设于所述背板10与多个背板连接端11之间以及所述背板10与背板外部连接端12之间的绝缘层14。一般在背板10上通过蒸镀或涂布的方法形成绝缘层14，接着在绝缘层14上通过贴附或压合的方法形成多个背板连接端11及背板外部连接端12。\n\n[0046]具体的，所述电路板21为金属基印刷电路板或柔性电路板(FPC)。\n\n[0047]具体的，单个迷你发光二极管22的长度和宽度均不超过300mm。\n\n[0048]具体的，所述直下式背光模组还包括设于所述多个灯板单元20上的扩散板40以及设于所述扩散板40上的光学膜片组50。\n\n[0049]请参阅图6，基于上述直下式背光模组，本发明还提供直下式背光模组的制作方法，包括如下步骤：\n\n[0050]步骤S1、提供多个电路板21，在所述多个电路板21的上表面分别形成多个迷你发光二极管22，在所述多个电路板21的下表面分别形成与多个迷你发光二极管22均连接的外部连接端23，得到多个灯板单元20；\n\n[0051]步骤S2、提供背板10，在所述背板10面向灯板单元20的一侧形成多个背板连接端11，在所述背板10远离灯板单元20的一侧形成多个背板连接端11均连接的背板外部连接端12以及与所述背板外部连接端12连接的驱动电路板13；\n\n[0052]步骤S3、将多个灯板单元20的外部连接端23分别与多个背板连接端11通过回流焊接一一对应连接。\n\n[0053]需要说明的是，本发明通过在背板10面向灯板单元20的一侧形成多个背板连接端11，在所述背板10远离灯板单元20的一侧形成与多个背板连接端11均连接的背板外部连接端12以及与所述背板外部连接端12连接的驱动电路板13，将多个灯板单元20的外部连接端23分别与多个背板连接端11通过回流焊接一一对应连接，通过驱动电路板13驱动多个灯板单元20的多个迷你发光二极管22发光，可以免除现有直下式背光模组中的连接器，降低直下式背光模组组装难度，实现直下式背光模组的薄型化。\n\n[0054]具体的，所述直下式背光模组的制作方法还包括步骤S4、在所述背板10远离灯板单元20的一侧形成覆盖背板外部连接端12及驱动电路板13的后盖30。该后盖30不同于现有技术中需覆盖所有灯板40’的连接器30’整面型后盖60’，只需要覆盖一个背板外部连接端12和一个驱动电路板13，因此可以进一步实现直下式背光模组的薄型化。\n\n[0055]具体的，所述背板外部连接端12与多个背板连接端11通过多条金属走线连接。\n\n[0056]进一步的，所述多条金属走线分别穿过多个设于背板10上的通孔连接背板外部连接端12与多个背板连接端11，或者，所述多条金属走线从背板10的外部连接背板外部连接端12与多个背板连接端11。\n\n[0057]具体的，所述背板10的材料为金属、塑胶或玻璃。\n\n[0058]进一步的，当所述背板10的材料为塑胶或玻璃时，其本身具有绝缘特性，因此所述步骤S2中，在背板10上通过贴附或压合的方法形成多个背板连接端11及背板外部连接端12。\n\n[0059]进一步的，请参阅图5，当所述背板10的材料为金属时，其本身具有导电特性，因此所述步骤S2中，还在所述背板10与多个背板连接端11之间以及所述背板10与背板外部连接端12之间通过蒸镀或涂布的方法形成绝缘层14，在绝缘层14上通过贴附或压合的方法形成多个背板连接端11及背板外部连接端12。\n\n[0060]具体的，所述电路板21为金属基印刷电路板或柔性电路板(FPC)。\n\n[0061]具体的，单个迷你发光二极管22的长度和宽度均不超过300mm。\n\n[0062]具体的，所述直下式背光模组的制作方法还包括步骤S5、在所述多个灯板单元20上方形成扩散板40，在所述扩散板40上方形成光学膜片组50。\n\n[0063]综上所述，本发明的直下式背光模组包括：背板以及设于所述背板上的多个灯板单元；所述灯板单元包括电路板、设于所述电路板上表面的多个迷你发光二极管以及设于所述电路板下表面并与多个迷你发光二极管均连接的外部连接端；所述背板面向灯板单元的一侧设有多个背板连接端；所述背板远离灯板单元的一侧设有与多个背板连接端均连接的背板外部连接端以及与所述背板外部连接端连接的驱动电路板；所述多个灯板单元的外部连接端分别与多个背板连接端一一对应连接，可以免除现有直下式背光模组中的连接器，实现直下式背光模组的薄型化。本发明的直下式背光模组的制作方法，可以免除现有直下式背光模组中的连接器，实现直下式背光模组的薄型化。\n\n[0064]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10652, 23706, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种发光二极管像素电路及显示面板。\n\n背景技术\n\n[0002]有机发光二极管(OLED)显示装置具有自发光，驱动电压低，发光效率高，响应时间短，使用温度范围宽等诸多优点，被业界公认为是最有发展潜力的显示装置。\n\n[0003]OLED显示面板按照驱动方式可以分为无源矩阵型OLED(Passive Matrix OLED，PMOLED)和有源矩阵型OLED(Active Matrix OLED，AMOLED)两大类。其中，AMOLED面板具有呈阵列式排布的像素，属于主动显示类型，发光效能高，通常用于高清晰度的大尺寸显示装置。\n\n[0004]微发光二极管(Micro LED)显示面板是一种以在一个基板上集成的高密度微小尺寸的发光二极管(LED)阵列作为显示像素来实现图像显示的显示装置，微发光二极管显示面板和OLED显示面板一样属于自发光显示器，但微发光二极管显示面板相比OLED显示面板还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示面板的最大竞争对手。\n\n[0005]参见图1，其为一种常见的微发光二极管或者有机发光二极管的驱动像素电路示意图。此2T1C像素电路主要包括作为驱动薄膜晶体管(TFT)的薄膜晶体管T1，作为开关薄膜晶体管的薄膜晶体管T2，存储电容C以及发光二极管LED，发光二极管LED可以是微发光二极管或者有机发光二极管，薄膜晶体管T2由相应行像素的扫描信号SCAN控制开关与否，以控制是否输入相应的数据信号Vdata。采用此像素电路，在发光阶段，流过LED的电流ILED由薄膜晶体管T1控制，可以表示为ILED＝k(Vdata-VLED-Vth)2，其中，k为与工艺和设计相关的参数，Vdata为源极芯片(Source IC)输出的数据信号的电压，VLED为LED上的电压，Vth为薄膜晶体管T1的阈值电压。\n\n[0006]参见图2，其为LED的亮度-电流曲线示意图，对于微发光二极管显示面板来说，LED的亮度-电流曲线斜率很大，微弱的电流变化就会引起人眼可察觉的亮度改变。因此微发光二极管显示面板如果采用传统驱动电路，例如图1所示电路，必须非常精确控制LED的驱动电流，难度较大。因为源极芯片输出电压的分辨率有限，难以精确控制LED电流，使其产生足够多的灰阶。\n\n发明内容\n\n[0007]因此，本发明的目的在于提供一种发光二极管像素电路及显示面板，改进像素电路以使其能够采用输出电压分辨率较低的源极芯片进行精细的电流控制。\n\n[0008]为实现上述目的，本发明提供了一种发光二极管像素电路，包括：\n\n[0009]作为驱动薄膜晶体管的第一薄膜晶体管，其栅极连接第一节点，源极和漏极分别连接第二节点和电源高电压；\n\n[0010]作为开关薄膜晶体管的第二薄膜晶体管，其栅极连接本行像素的扫描信号，源极和漏极分别连接第一节点和数据信号；\n\n[0011]发光二极管，其阳极连接第二节点，阴极连接电源低电压；\n\n[0012]第一电容，其两端分别连接第一节点和第三节点；\n\n[0013]第二电容，其两端分别连接第二节点和第三节点；\n\n[0014]第三薄膜晶体管，其栅极连接下一行像素的扫描信号，源极和漏极分别连接第二节点和第三节点。\n\n[0015]其中，所述发光二极管像素电路的驱动时序包括三个阶段：在第一阶段，所述本行像素的扫描信号保持高电平，所述下一行像素的扫描信号保持低电平；在第二阶段，所述本行像素的扫描信号保持低电平，所述下一行像素的扫描信号保持高电平；在第三阶段，所述本行像素的扫描信号保持低电平，所述下一行像素的扫描信号保持低电平。\n\n[0016]其中，还包括第四薄膜晶体管，其栅极连接控制信号，源极和漏极分别连接第二节点和参考电压。\n\n[0017]其中，所述发光二极管像素电路的驱动时序包括三个阶段：在第一阶段，所述控制信号保持高电平，所述本行像素的扫描信号保持高电平，所述下一行像素的扫描信号保持低电平；在第二阶段，所述控制信号保持低电平，所述本行像素的扫描信号保持低电平，所述下一行像素的扫描信号保持高电平；在第三阶段，所述控制信号保持低电平，所述本行像素的扫描信号保持低电平，所述下一行像素的扫描信号保持低电平。\n\n[0018]其中，所述发光二极管为有机发光二极管。\n\n[0019]其中，所述发光二极管为微发光二极管。\n\n[0020]其中，所述发光二极管为迷你发光二极管。\n\n[0021]本发明还提供了一种显示面板，包括前述任一项所述的发光二极管像素电路。\n\n[0022]综上，本发明的发光二极管像素电路及显示面板，通过改进像素电路使其能够采用输出电压分辨率较低的源极芯片进行精细的电流控制；改进后的像素电路结构简单，且不需增加驱动信号。\n\n附图说明\n\n[0023]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。\n\n[0024]附图中，\n\n[0025]图1为一种常见的微发光二极管或者有机发光二极管的驱动像素电路示意图；\n\n[0026]图2为LED的亮度-电流曲线示意图；\n\n[0027]图3为本发明发光二极管像素电路一较佳实施例的电路示意图；\n\n[0028]图4为图3所示电路的时序图；\n\n[0029]图5为本发明发光二极管像素电路又一较佳实施例的电路示意图；\n\n[0030]图6为图5所示电路的时序图。\n\n具体实施方式\n\n[0031]本发明特别适用于微发光二极管显示面板，但不限于此，可以应用于各种电流驱动显示面板，如有机发光二极管显示面板，迷你发光二极管(Mini LED)显示面板，可提升驱动电流控制精度。\n\n[0032]本发明提出一种像素电路，改进了原有的像素电路，改进后的像素电路在原有像素电路基础上增加一个电容以及一个薄膜晶体管，增加的电容与原有的像素电路中的存储电容串联，增加的薄膜晶体管连接于串联的两个电容的公共点以及驱动薄膜晶体管(N型)的源极。\n\n[0033]参见图3及图4，图3为本发明发光二极管像素电路一较佳实施例的电路示意图，图4为图3所示电路的时序图。该较佳实施例的发光二极管像素电路改进了传统的2T1C像素电路，主要包括：\n\n[0034]作为驱动薄膜晶体管的第一薄膜晶体管T1，其栅极连接第一节点G，源极和漏极分别连接第二节点S和电源高电压OVDD；\n\n[0035]作为开关薄膜晶体管的第二薄膜晶体管T2，其栅极连接本行像素的扫描信号SCANn，源极和漏极分别连接第一节点G和数据信号Vdata；\n\n[0036]发光二极管LED，其阳极连接第二节点S，阴极连接电源低电压OVSS；\n\n[0037]第一电容C1，其两端分别连接第一节点G和第三节点A；\n\n[0038]第二电容C2，其两端分别连接第二节点S和第三节点A；\n\n[0039]第三薄膜晶体管T3，其栅极连接下一行像素的扫描信号SCANn+1，源极和漏极分别连接第二节点S和第三节点A。\n\n[0040]按照图4所示时序驱动该电路时，主要包括三个阶段：在第一阶段，所述本行像素的扫描信号SCANn保持高电平，所述下一行像素的扫描信号SCANn+1保持低电平；在第二阶段，所述本行像素的扫描信号SCANn保持低电平，所述下一行像素的扫描信号SCANn+1保持高电平；在第三阶段，所述本行像素的扫描信号SCANn保持低电平，所述下一行像素的扫描信号SCANn+1保持低电平。\n\n[0041]在第一阶段，当本行像素的扫描信号SCANn打开时，第一节点G充入数据信号Vdata，流过第一薄膜晶体管T1的电流是：\n\n[0042]ILED＝k(Vdata-VS-Vth)2，其中，k为与工艺和设计相关的参数，Vdata为源极芯片输出的数据信号的电压，VS为第二节点处也就是LED上的电压，Vth为薄膜晶体管T1的阈值电压。\n\n[0043]此时第一电容C1和第二电容C2上的电压U1和U2满足：\n\n[0044]\n\n[0045]所以\n\n[0046]在第二阶段，当扫描至下一行像素时，扫描信号SCANn关闭，下一行像素的扫描信号SCANn+1打开，第三薄膜晶体管T3导通，第二电容C2放电，第一电容C1维持电压U1不变。流过第一薄膜晶体管T1的电流是：ILED＝k(U1-Vth)2。\n\n[0047]在第三阶段，当扫描信号SCANn+1也关闭时，第一电容C1和第二电容C2的电荷平衡，满足：\n\n[0048]\n\n[0049]从而解出\n\n[0050]代入U1，得到\n\n[0051]所以最终流过LED的电流是：\n\n[0052]\n\n[0053]相较于传统驱动电路的LED电流，需要更大电压的数据信号Vdata才能产生相同的电流。因此可以使用较低分辨率的源极芯片进行更精细的电流控制，满足微发光二极管的驱动需求。\n\n[0054]另外，从第二阶段过渡至第三阶段时，第一节点和第二节点之间的电压VGS会上升，下降，或是不变，取决于第一电容C1和第二电容C2电容值的大小：\n\n[0055]C1＞C2，VGS升高；\n\n[0056]C1＝C2，VGS不变；\n\n[0057]C1＜C2，VGS下降。\n\n[0058]参见图5及图6，图5为本发明发光二极管像素电路又一较佳实施例的电路示意图，图6为图5所示电路的时序图。该较佳实施例的发光二极管像素电路改进了传统的3T1C像素电路，主要包括：\n\n[0059]作为驱动薄膜晶体管的第一薄膜晶体管T1，其栅极连接第一节点G，源极和漏极分别连接第二节点S和电源高电压OVDD；\n\n[0060]作为开关薄膜晶体管的第二薄膜晶体管T2，其栅极连接本行像素的扫描信号SCANn，源极和漏极分别连接第一节点G和数据信号Vdata；\n\n[0061]发光二极管LED，其阳极连接第二节点S，阴极连接电源低电压OVSS；\n\n[0062]第一电容C1，其两端分别连接第一节点G和第三节点A；\n\n[0063]第二电容C2，其两端分别连接第二节点S和第三节点A；\n\n[0064]第三薄膜晶体管T3，其栅极连接下一行像素的扫描信号SCANn+1，源极和漏极分别连接第二节点S和第三节点A；\n\n[0065]第四薄膜晶体管T4，其栅极连接控制信号Pre-charge，源极和漏极分别连接第二节点S和参考电压Vref。\n\n[0066]按照图6所示时序驱动该电路时，主要包括三个阶段：在第一阶段，所述控制信号Pre-charge保持高电平，所述本行像素的扫描信号SCANn保持高电平，所述下一行像素的扫描信号SCANn+1保持低电平；在第二阶段，所述控制信号Pre-charge保持低电平，所述本行像素的扫描信号SCANn保持低电平，所述下一行像素的扫描信号SCANn+1保持高电平；在第三阶段，所述控制信号Pre-charge保持低电平，所述本行像素的扫描信号SCANn保持低电平，所述下一行像素的扫描信号SCANn+1保持低电平。按照图6时序进行驱动时，在第二薄膜晶体管T2打开的同时打开第四薄膜晶体管T4，第二节点S充入参考电压Vref。\n\n[0067]在第三阶段，流过LED的电流为：\n\n[0068]\n\n[0069]相较于传统驱动电路的LED电流，需要更大电压的数据信号Vdata才能产生相同的电流。因此可以使用较低分辨率的源极芯片进行更精细的电流控制，满足微发光二极管的驱动需求。\n\n[0070]另外，从第二阶段过渡至第三阶段时，第一节点和第二节点之间的电压VGS会上升，下降，或是不变，取决于第一电容C1和第二电容C2电容值的大小：\n\n[0071]C1＞C2，VGS升高；\n\n[0072]C1＝C2，VGS不变；\n\n[0073]C1＜C2，VGS下降。\n\n[0074]基于本发明的发光二极管像素电路，本发明还相应提供了包含所述发光二极管像素电路的显示面板。\n\n[0075]综上，本发明的发光二极管像素电路及显示面板，通过改进像素电路使其能够采用输出电压分辨率较低的源极芯片进行精细的电流控制；改进后的像素电路结构简单，且不需增加驱动信号。\n\n[0076]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种发光二极管像素电路及显示面板。\n\n背景技术\n\n[0002]有机发光二极管(OLED)显示装置具有自发光，驱动电压低，发光效率高，响应时间短，使用温度范围宽等诸多优点，被业界公认为是最有发展潜力的显示装置。\n\n[0003]OLED显示面板按照驱动方式可以分为无源矩阵型OLED(Passive Matrix OLED，PMOLED)和有源矩阵型OLED(Active Matrix OLED，AMOLED)两大类。其中，AMOLED面板具有呈阵列式排布的像素，属于主动显示类型，发光效能高，通常用于高清晰度的大尺寸显示装置。\n\n[0004]微发光二极管(Micro LED)显示面板是一种以在一个基板上集成的高密度微小尺寸的发光二极管(LED)阵列作为显示像素来实现图像显示的显示装置，微发光二极管显示面板和OLED显示面板一样属于自发光显示器，但微发光二极管显示面板相比OLED显示面板还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示面板的最大竞争对手。\n\n[0005]参见图1，其为一种常见的微发光二极管或者有机发光二极管的驱动像素电路示意图。此2T1C像素电路主要包括作为驱动薄膜晶体管(TFT)的薄膜晶体管T1，作为开关薄膜晶体管的薄膜晶体管T2，存储电容C以及发光二极管LED，发光二极管LED可以是微发光二极管或者有机发光二极管，薄膜晶体管T2由相应行像素的扫描信号SCAN控制开关与否，以控制是否输入相应的数据信号Vdata。采用此像素电路，在发光阶段，流过LED的电流ILED由薄膜晶体管T1控制，可以表示为ILED＝k(Vdata-VLED-Vth)2，其中，k为与工艺和设计相关的参数，Vdata为源极芯片(Source IC)输出的数据信号的电压，VLED为LED上的电压，Vth为薄膜晶体管T1的阈值电压。\n\n[0006]参见图2，其为LED的亮度-电流曲线示意图，对于微发光二极管显示面板来说，LED的亮度-电流曲线斜率很大，微弱的电流变化就会引起人眼可察觉的亮度改变。因此微发光二极管显示面板如果采用传统驱动电路，例如图1所示电路，必须非常精确控制LED的驱动电流，难度较大。因为源极芯片输出电压的分辨率有限，难以精确控制LED电流，使其产生足够多的灰阶。\n\n发明内容\n\n[0007]因此，本发明的目的在于提供一种发光二极管像素电路及显示面板，改进像素电路以使其能够采用输出电压分辨率较低的源极芯片进行精细的电流控制。\n\n[0008]为实现上述目的，本发明提供了一种发光二极管像素电路，包括：\n\n[0009]作为驱动薄膜晶体管的第一薄膜晶体管，其栅极连接第一节点，源极和漏极分别连接第二节点和电源高电压；\n\n[0010]作为开关薄膜晶体管的第二薄膜晶体管，其栅极连接本行像素的扫描信号，源极和漏极分别连接第一节点和数据信号；\n\n[0011]发光二极管，其阳极连接第二节点，阴极连接电源低电压；\n\n[0012]第一电容，其两端分别连接第一节点和第三节点；\n\n[0013]第二电容，其两端分别连接第二节点和第三节点；\n\n[0014]第三薄膜晶体管，其栅极连接下一行像素的扫描信号，源极和漏极分别连接第二节点和第三节点。\n\n[0015]其中，所述发光二极管像素电路的驱动时序包括三个阶段：在第一阶段，所述本行像素的扫描信号保持高电平，所述下一行像素的扫描信号保持低电平；在第二阶段，所述本行像素的扫描信号保持低电平，所述下一行像素的扫描信号保持高电平；在第三阶段，所述本行像素的扫描信号保持低电平，所述下一行像素的扫描信号保持低电平。\n\n[0016]其中，还包括第四薄膜晶体管，其栅极连接控制信号，源极和漏极分别连接第二节点和参考电压。\n\n[0017]其中，所述发光二极管像素电路的驱动时序包括三个阶段：在第一阶段，所述控制信号保持高电平，所述本行像素的扫描信号保持高电平，所述下一行像素的扫描信号保持低电平；在第二阶段，所述控制信号保持低电平，所述本行像素的扫描信号保持低电平，所述下一行像素的扫描信号保持高电平；在第三阶段，所述控制信号保持低电平，所述本行像素的扫描信号保持低电平，所述下一行像素的扫描信号保持低电平。\n\n[0018]其中，所述发光二极管为有机发光二极管。\n\n[0019]其中，所述发光二极管为微发光二极管。\n\n[0020]其中，所述发光二极管为迷你发光二极管。\n\n[0021]本发明还提供了一种显示面板，包括前述任一项所述的发光二极管像素电路。\n\n[0022]综上，本发明的发光二极管像素电路及显示面板，通过改进像素电路使其能够采用输出电压分辨率较低的源极芯片进行精细的电流控制；改进后的像素电路结构简单，且不需增加驱动信号。\n\n附图说明\n\n[0023]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。\n\n[0024]附图中，\n\n[0025]图1为一种常见的微发光二极管或者有机发光二极管的驱动像素电路示意图；\n\n[0026]图2为LED的亮度-电流曲线示意图；\n\n[0027]图3为本发明发光二极管像素电路一较佳实施例的电路示意图；\n\n[0028]图4为图3所示电路的时序图；\n\n[0029]图5为本发明发光二极管像素电路又一较佳实施例的电路示意图；\n\n[0030]图6为图5所示电路的时序图。\n\n具体实施方式\n\n[0031]本发明特别适用于微发光二极管显示面板，但不限于此，可以应用于各种电流驱动显示面板，如有机发光二极管显示面板，迷你发光二极管(Mini LED)显示面板，可提升驱动电流控制精度。\n\n[0032]本发明提出一种像素电路，改进了原有的像素电路，改进后的像素电路在原有像素电路基础上增加一个电容以及一个薄膜晶体管，增加的电容与原有的像素电路中的存储电容串联，增加的薄膜晶体管连接于串联的两个电容的公共点以及驱动薄膜晶体管(N型)的源极。\n\n[0033]参见图3及图4，图3为本发明发光二极管像素电路一较佳实施例的电路示意图，图4为图3所示电路的时序图。该较佳实施例的发光二极管像素电路改进了传统的2T1C像素电路，主要包括：\n\n[0034]作为驱动薄膜晶体管的第一薄膜晶体管T1，其栅极连接第一节点G，源极和漏极分别连接第二节点S和电源高电压OVDD；\n\n[0035]作为开关薄膜晶体管的第二薄膜晶体管T2，其栅极连接本行像素的扫描信号SCANn，源极和漏极分别连接第一节点G和数据信号Vdata；\n\n[0036]发光二极管LED，其阳极连接第二节点S，阴极连接电源低电压OVSS；\n\n[0037]第一电容C1，其两端分别连接第一节点G和第三节点A；\n\n[0038]第二电容C2，其两端分别连接第二节点S和第三节点A；\n\n[0039]第三薄膜晶体管T3，其栅极连接下一行像素的扫描信号SCANn+1，源极和漏极分别连接第二节点S和第三节点A。\n\n[0040]按照图4所示时序驱动该电路时，主要包括三个阶段：在第一阶段，所述本行像素的扫描信号SCANn保持高电平，所述下一行像素的扫描信号SCANn+1保持低电平；在第二阶段，所述本行像素的扫描信号SCANn保持低电平，所述下一行像素的扫描信号SCANn+1保持高电平；在第三阶段，所述本行像素的扫描信号SCANn保持低电平，所述下一行像素的扫描信号SCANn+1保持低电平。\n\n[0041]在第一阶段，当本行像素的扫描信号SCANn打开时，第一节点G充入数据信号Vdata，流过第一薄膜晶体管T1的电流是：\n\n[0042]ILED＝k(Vdata-VS-Vth)2，其中，k为与工艺和设计相关的参数，Vdata为源极芯片输出的数据信号的电压，VS为第二节点处也就是LED上的电压，Vth为薄膜晶体管T1的阈值电压。\n\n[0043]此时第一电容C1和第二电容C2上的电压U1和U2满足：\n\n[0044]\n\n[0045]所以\n\n[0046]在第二阶段，当扫描至下一行像素时，扫描信号SCANn关闭，下一行像素的扫描信号SCANn+1打开，第三薄膜晶体管T3导通，第二电容C2放电，第一电容C1维持电压U1不变。流过第一薄膜晶体管T1的电流是：ILED＝k(U1-Vth)2。\n\n[0047]在第三阶段，当扫描信号SCANn+1也关闭时，第一电容C1和第二电容C2的电荷平衡，满足：\n\n[0048]\n\n[0049]从而解出\n\n[0050]代入U1，得到\n\n[0051]所以最终流过LED的电流是：\n\n[0052]\n\n[0053]相较于传统驱动电路的LED电流，需要更大电压的数据信号Vdata才能产生相同的电流。因此可以使用较低分辨率的源极芯片进行更精细的电流控制，满足微发光二极管的驱动需求。\n\n[0054]另外，从第二阶段过渡至第三阶段时，第一节点和第二节点之间的电压VGS会上升，下降，或是不变，取决于第一电容C1和第二电容C2电容值的大小：\n\n[0055]C1＞C2，VGS升高；\n\n[0056]C1＝C2，VGS不变；\n\n[0057]C1＜C2，VGS下降。\n\n[0058]参见图5及图6，图5为本发明发光二极管像素电路又一较佳实施例的电路示意图，图6为图5所示电路的时序图。该较佳实施例的发光二极管像素电路改进了传统的3T1C像素电路，主要包括：\n\n[0059]作为驱动薄膜晶体管的第一薄膜晶体管T1，其栅极连接第一节点G，源极和漏极分别连接第二节点S和电源高电压OVDD；\n\n[0060]作为开关薄膜晶体管的第二薄膜晶体管T2，其栅极连接本行像素的扫描信号SCANn，源极和漏极分别连接第一节点G和数据信号Vdata；\n\n[0061]发光二极管LED，其阳极连接第二节点S，阴极连接电源低电压OVSS；\n\n[0062]第一电容C1，其两端分别连接第一节点G和第三节点A；\n\n[0063]第二电容C2，其两端分别连接第二节点S和第三节点A；\n\n[0064]第三薄膜晶体管T3，其栅极连接下一行像素的扫描信号SCANn+1，源极和漏极分别连接第二节点S和第三节点A；\n\n[0065]第四薄膜晶体管T4，其栅极连接控制信号Pre-charge，源极和漏极分别连接第二节点S和参考电压Vref。\n\n[0066]按照图6所示时序驱动该电路时，主要包括三个阶段：在第一阶段，所述控制信号Pre-charge保持高电平，所述本行像素的扫描信号SCANn保持高电平，所述下一行像素的扫描信号SCANn+1保持低电平；在第二阶段，所述控制信号Pre-charge保持低电平，所述本行像素的扫描信号SCANn保持低电平，所述下一行像素的扫描信号SCANn+1保持高电平；在第三阶段，所述控制信号Pre-charge保持低电平，所述本行像素的扫描信号SCANn保持低电平，所述下一行像素的扫描信号SCANn+1保持低电平。按照图6时序进行驱动时，在第二薄膜晶体管T2打开的同时打开第四薄膜晶体管T4，第二节点S充入参考电压Vref。\n\n[0067]在第三阶段，流过LED的电流为：\n\n[0068]\n\n[0069]相较于传统驱动电路的LED电流，需要更大电压的数据信号Vdata才能产生相同的电流。因此可以使用较低分辨率的源极芯片进行更精细的电流控制，满足微发光二极管的驱动需求。\n\n[0070]另外，从第二阶段过渡至第三阶段时，第一节点和第二节点之间的电压VGS会上升，下降，或是不变，取决于第一电容C1和第二电容C2电容值的大小：\n\n[0071]C1＞C2，VGS升高；\n\n[0072]C1＝C2，VGS不变；\n\n[0073]C1＜C2，VGS下降。\n\n[0074]基于本发明的发光二极管像素电路，本发明还相应提供了包含所述发光二极管像素电路的显示面板。\n\n[0075]综上，本发明的发光二极管像素电路及显示面板，通过改进像素电路使其能够采用输出电压分辨率较低的源极芯片进行精细的电流控制；改进后的像素电路结构简单，且不需增加驱动信号。\n\n[0076]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10653, 23707, '技术领域\n\n[0001]本发明是有关于一种显示器结构及制造方法，特别是有关于一种柔性显示器结构及制造方法。\n\n背景技术\n\n[0002]近年来，随着显示技术的创新及发展，显示器的应用场景也越来越多样化。随着电子产品朝着轻、薄、短、小的快速发展，各种便携式电子产品使用的液晶显示面板的需求越来越大。其中，柔性有机发光二极管(OLED)具有自发光性、应答速度快、广视角等特点，应用前景广阔。如今，可弯折显示器成为主流。\n\n[0003]但目前的柔性有机发光二极管的结构是将柔性材料(例如聚酰亚胺)直接与玻璃衬底接触以形成柔性衬底，于制程中将所述柔性衬底与所述玻璃衬底剥离，所述柔性衬底的剥离是利用激光将所述柔性衬底与所述玻璃衬底的接触面高温裂解，从而达到柔性衬底的剥离。所述柔性衬底剥离之后转移到下一站贴合作业之前，会有划伤的风险，从而对后续的贴合工艺产生负面影响，导致良率降低。再者，利用激光将所述柔性衬底与所述玻璃衬底的接触面高温裂解，可能会因为激光的高温破坏显示器的结构。再者，所述柔性衬底高温裂解后，无法完全分离所述柔性衬底与所述玻璃衬底，使得部分的柔性衬底残留在所述玻璃衬底上，或部分的所述柔性衬底高温碳化后残留在所述柔性衬底上，影响后续制程。\n\n[0004]故，有必要提供一种显示器结构及制造方法，以解决现有技术所存在的问题。\n\n发明内容\n\n[0005]有鉴于此，本发明提供一种显示器结构及制造方法，以解决现有技术所存在的利用激光剥离玻璃衬底时破坏显示器的结构的问题。\n\n[0006]本发明的主要目的在于提供一种显示器结构及制造方法，其可以改善利用激光将所述柔性衬底与所述玻璃衬底的接触面高温裂解，可能会因为激光的高温破坏显示器的结构的问题。\n\n[0007]本发明的次要目的在于提供一种显示器结构及制造方法，其通过使用可牺牲层及石墨烯层，从而避免利用激光剥离时破坏显示器的结构，及于制造流程中保护柔性衬底，并增加柔性衬底的弯折能力。\n\n[0008]为达成本发明的前述目的，本发明一实施例提供一种柔性显示器制造方法，包含步骤：(a)提供一载板，依序形成有一刚性衬底、一可牺牲层及一石墨烯层；(b)形成一柔性衬底于所述载板上；(c)形成一显示器元件层于所述柔性衬底上；及(d)移除所述刚性衬底及所述可牺牲层。\n\n[0009]在本发明的一实施例中，所述刚性衬底为一玻璃衬底；所述可牺牲层为一第一聚酰亚胺层；及所述柔性衬底为一第二聚酰亚胺层。\n\n[0010]在本发明的一实施例中，所述第一聚酰亚胺层的一厚度为1微米至2微米。\n\n[0011]在本发明的一实施例中，所述第二聚酰亚胺层的一厚度为8微米至10微米。\n\n[0012]在本发明的一实施例中，所述步骤(d)更包含：对所述第一聚酰亚胺层施加一激光，以使所述第一聚酰亚胺层裂解而移除所述刚性衬底及所述可牺牲层。\n\n[0013]在本发明的一实施例中，所述石墨烯层具有一厚度为30微米至50微米。\n\n[0014]在本发明的一实施例中，所述石墨烯层通过低温溅射沉积形成。\n\n[0015]在本发明的一实施例中，所述显示器元件层具有多个有机发光二极管元件。\n\n[0016]再者，本发明另一实施例另提供一种显示器结构，包含：一石墨烯层；一聚酰亚胺层，设置于所述石墨烯层上；及一显示器元件层，设置于所述聚酰亚胺层上。\n\n[0017]在本发明的一实施例中，所述聚酰亚胺层的一厚度为8微米至10微米；及所述石墨烯层具有一厚度为30微米至50微米。\n\n[0018]与现有技术相比较，本发明的显示器结构及制造方法，这样不但可改善利用激光将所述柔性衬底与所述玻璃衬底的接触面高温裂解，可能会因为激光的高温破坏显示器的结构的问题，还可以避免所述柔性衬底剥离之后转移到下一站贴合作业之前被划伤的风险，从而避免划伤对后续的贴合工艺产生负面影响，进而提高产品的良率。\n\n[0019]为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下：\n\n附图说明\n\n[0020]图1A至图1D是本发明第一实施例的显示器结构及制造方法示意图。\n\n具体实施方式\n\n[0021]以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。再者，本发明所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧面、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。\n\n[0022]请参照图1A至图1D所示，本发明实施例为达成本发明的前述目的，提供一种显示器结构及制造方法，包含步骤：\n\n[0023](a)提供一载板10，依序形成有一刚性衬底101、一可牺牲层102及一石墨烯层103；\n\n[0024](b)形成一柔性衬底104于所述载板10上；\n\n[0025](c)形成一显示器元件层105于所述柔性衬底104上；及\n\n[0026](d)移除所述刚性衬底101及所述可牺牲层102。\n\n[0027]本发明将于下文利用图1A至图1D逐一详细说明在一实施例中上述各元件的细部构造、组装关系及其运作原理。\n\n[0028]请参照图1A所示，本发明首先进行步骤(a)，以提供一载板10，所述载板10依序形成有一刚性衬底101、一可牺牲层102及一石墨烯层103。较佳地，所述刚性衬底101为一玻璃衬底，所述可牺牲层102为一第一聚酰亚胺层。较佳地，所述第一聚酰亚胺层的一厚度为1微米至2微米。所述载板10可由一供应商提供时，即具有所述刚性衬底101、所述可牺牲层102及所述石墨烯层103。所述载板10也可由一供应商购买一玻璃衬底。可选地，于厂内将所述玻璃衬底进行清洗。在所述玻璃衬底上面涂布所述可牺牲层102。所述可牺牲层102也可以印刷的方式形成于所述玻璃衬底上。接着，在所述可牺牲层102贴附一层所述石墨烯层103。可选地，所述石墨烯层103也可通过低温溅射沉积形成。可选地，所述石墨烯层103具有一厚度为30微米至50微米。\n\n[0029]请参照图1B所示，本发明接着进行步骤(b)，以形成一柔性衬底104于所述载板10上。较佳地，所述柔性衬底104为一第二聚酰亚胺层。可选地，述第二聚酰亚胺层的一厚度为8微米至10微米。所述柔性衬底104可以通过涂布的方式形成于所述载板10上。\n\n[0030]请参照图1C所示，本发明随后进行步骤(c)，以形成一显示器元件层105于所述柔性衬底104上。较佳地，所述显示器元件层105具有多个有机发光二极管元件。替代地，所述显示器元件层105可以具有多个薄膜晶体管。本领域普通技术人员应当理解，所述显示器元件层105可以为替换成其他适合于柔性显示器中的元件。在所述显示器元件层105上更可形成有液晶层、彩膜层、滤光片层或盖板层等，在此不一一赘述。\n\n[0031]请参照图1D所示，本发明最后进行步骤(d)，以移除所述刚性衬底101及所述可牺牲层102。较佳地，所述步骤(d)更包含：对所述第一聚酰亚胺层施加一激光，以使所述第一聚酰亚胺层裂解而移除所述刚性衬底101及所述可牺牲层102。在移除所述刚性衬底101及所述可牺牲层102，所述石墨烯层103保留所述柔性衬底104下。如此，所述柔性衬底104剥离之后转移到后续的制程，所述石墨烯层103能够保护所述柔性衬底104以避免划伤的风险，从而避免对后续的贴合工艺产生负面影响，导致良率降低。再者，所述石墨烯层103能够有效释放柔性显示器在弯折时所产生的应力，并可以提升柔性显示器的弯折能力。另外，由于所述第一聚酰亚胺层的所述厚度为1微米至2微米，所述第一聚酰亚胺层可完全经由所述激光裂解汽化而不会残留在所述刚性衬底101上，使得所述刚性衬底101可以回收再使用，且所述第一聚酰亚胺层不会残留于所述石墨烯层103上，进而污染后续制程而造成良率下降。再者，所述石墨烯层103能够保护所述柔性衬底104及形成在所述柔性衬底104上的所述显示器元件层105，免于对所述第一聚酰亚胺层施加所述激光时，破坏所述柔性衬底104及形成在所述柔性衬底104上的所述显示器元件层105。所述石墨烯层103具有所述厚度为30微米至50微米时，可以有效地保护所述柔性衬底104及形成在所述柔性衬底104上的所述显示器元件层105，又不会大幅增加产品的成本，极具经济效益。\n\n[0032]再者，本发明另一实施例另提供一种经由上文所述的方法制造的一种显示器结构，所述显示器结构包含：\n\n[0033]一石墨烯层；\n\n[0034]一聚酰亚胺层，设置于所述石墨烯层上；及\n\n[0035]一显示器元件层，设置于所述聚酰亚胺层上。\n\n[0036]较佳地，所述聚酰亚胺的一厚度为8微米至10微米；及所述石墨烯层具有一厚度为30微米至50微米。\n\n[0037]另外，本发明另一实施例另提供一种经由上文所述的方法制造的一种显示器载板结构，所述显示器载板结构包含：\n\n[0038]一载板，依序形成有一刚性衬底、一可牺牲层及一石墨烯层。\n\n[0039]较佳地，所述刚性衬底为一玻璃衬底，所述可牺牲层为一第一聚酰亚胺层。\n\n[0040]较佳地，所述第一聚酰亚胺层的一厚度为1微米至2微米。\n\n[0041]较佳地，所述石墨烯层具有一厚度为30微米至50微米。\n\n[0042]较佳地，所述石墨烯层通过低温溅射沉积形成。\n\n[0043]如上所述，相较于现有的问题，却也常因所述柔性衬底剥离之后转移到下一站贴合作业之前，而导致会有划伤的风险，从而对后续的贴合工艺产生负面影响，导致良率降低。再者，利用激光将所述柔性衬底与所述玻璃衬底的接触面高温裂解，而导致因为激光的高温破坏显示器的结构。再者，所述柔性衬底高温裂解后，而导致部分的柔性衬底残留在所述玻璃衬底上，或部分的所述柔性衬底残留在所述柔性衬底上，影响后续制程。本发明的显示器结构及制造方法通过其通过使用可牺牲层及石墨烯层，从而避免利用激光剥离时破坏显示器的结构，及于制造流程中保护柔性衬底，并增加柔性衬底的弯折能力。\n\n[0044]本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。', '技术领域\n\n[0001]本发明是有关于一种显示器结构及制造方法，特别是有关于一种柔性显示器结构及制造方法。\n\n背景技术\n\n[0002]近年来，随着显示技术的创新及发展，显示器的应用场景也越来越多样化。随着电子产品朝着轻、薄、短、小的快速发展，各种便携式电子产品使用的液晶显示面板的需求越来越大。其中，柔性有机发光二极管(OLED)具有自发光性、应答速度快、广视角等特点，应用前景广阔。如今，可弯折显示器成为主流。\n\n[0003]但目前的柔性有机发光二极管的结构是将柔性材料(例如聚酰亚胺)直接与玻璃衬底接触以形成柔性衬底，于制程中将所述柔性衬底与所述玻璃衬底剥离，所述柔性衬底的剥离是利用激光将所述柔性衬底与所述玻璃衬底的接触面高温裂解，从而达到柔性衬底的剥离。所述柔性衬底剥离之后转移到下一站贴合作业之前，会有划伤的风险，从而对后续的贴合工艺产生负面影响，导致良率降低。再者，利用激光将所述柔性衬底与所述玻璃衬底的接触面高温裂解，可能会因为激光的高温破坏显示器的结构。再者，所述柔性衬底高温裂解后，无法完全分离所述柔性衬底与所述玻璃衬底，使得部分的柔性衬底残留在所述玻璃衬底上，或部分的所述柔性衬底高温碳化后残留在所述柔性衬底上，影响后续制程。\n\n[0004]故，有必要提供一种显示器结构及制造方法，以解决现有技术所存在的问题。\n\n发明内容\n\n[0005]有鉴于此，本发明提供一种显示器结构及制造方法，以解决现有技术所存在的利用激光剥离玻璃衬底时破坏显示器的结构的问题。\n\n[0006]本发明的主要目的在于提供一种显示器结构及制造方法，其可以改善利用激光将所述柔性衬底与所述玻璃衬底的接触面高温裂解，可能会因为激光的高温破坏显示器的结构的问题。\n\n[0007]本发明的次要目的在于提供一种显示器结构及制造方法，其通过使用可牺牲层及石墨烯层，从而避免利用激光剥离时破坏显示器的结构，及于制造流程中保护柔性衬底，并增加柔性衬底的弯折能力。\n\n[0008]为达成本发明的前述目的，本发明一实施例提供一种柔性显示器制造方法，包含步骤：(a)提供一载板，依序形成有一刚性衬底、一可牺牲层及一石墨烯层；(b)形成一柔性衬底于所述载板上；(c)形成一显示器元件层于所述柔性衬底上；及(d)移除所述刚性衬底及所述可牺牲层。\n\n[0009]在本发明的一实施例中，所述刚性衬底为一玻璃衬底；所述可牺牲层为一第一聚酰亚胺层；及所述柔性衬底为一第二聚酰亚胺层。\n\n[0010]在本发明的一实施例中，所述第一聚酰亚胺层的一厚度为1微米至2微米。\n\n[0011]在本发明的一实施例中，所述第二聚酰亚胺层的一厚度为8微米至10微米。\n\n[0012]在本发明的一实施例中，所述步骤(d)更包含：对所述第一聚酰亚胺层施加一激光，以使所述第一聚酰亚胺层裂解而移除所述刚性衬底及所述可牺牲层。\n\n[0013]在本发明的一实施例中，所述石墨烯层具有一厚度为30微米至50微米。\n\n[0014]在本发明的一实施例中，所述石墨烯层通过低温溅射沉积形成。\n\n[0015]在本发明的一实施例中，所述显示器元件层具有多个有机发光二极管元件。\n\n[0016]再者，本发明另一实施例另提供一种显示器结构，包含：一石墨烯层；一聚酰亚胺层，设置于所述石墨烯层上；及一显示器元件层，设置于所述聚酰亚胺层上。\n\n[0017]在本发明的一实施例中，所述聚酰亚胺层的一厚度为8微米至10微米；及所述石墨烯层具有一厚度为30微米至50微米。\n\n[0018]与现有技术相比较，本发明的显示器结构及制造方法，这样不但可改善利用激光将所述柔性衬底与所述玻璃衬底的接触面高温裂解，可能会因为激光的高温破坏显示器的结构的问题，还可以避免所述柔性衬底剥离之后转移到下一站贴合作业之前被划伤的风险，从而避免划伤对后续的贴合工艺产生负面影响，进而提高产品的良率。\n\n[0019]为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下：\n\n附图说明\n\n[0020]图1A至图1D是本发明第一实施例的显示器结构及制造方法示意图。\n\n具体实施方式\n\n[0021]以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。再者，本发明所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧面、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。\n\n[0022]请参照图1A至图1D所示，本发明实施例为达成本发明的前述目的，提供一种显示器结构及制造方法，包含步骤：\n\n[0023](a)提供一载板10，依序形成有一刚性衬底101、一可牺牲层102及一石墨烯层103；\n\n[0024](b)形成一柔性衬底104于所述载板10上；\n\n[0025](c)形成一显示器元件层105于所述柔性衬底104上；及\n\n[0026](d)移除所述刚性衬底101及所述可牺牲层102。\n\n[0027]本发明将于下文利用图1A至图1D逐一详细说明在一实施例中上述各元件的细部构造、组装关系及其运作原理。\n\n[0028]请参照图1A所示，本发明首先进行步骤(a)，以提供一载板10，所述载板10依序形成有一刚性衬底101、一可牺牲层102及一石墨烯层103。较佳地，所述刚性衬底101为一玻璃衬底，所述可牺牲层102为一第一聚酰亚胺层。较佳地，所述第一聚酰亚胺层的一厚度为1微米至2微米。所述载板10可由一供应商提供时，即具有所述刚性衬底101、所述可牺牲层102及所述石墨烯层103。所述载板10也可由一供应商购买一玻璃衬底。可选地，于厂内将所述玻璃衬底进行清洗。在所述玻璃衬底上面涂布所述可牺牲层102。所述可牺牲层102也可以印刷的方式形成于所述玻璃衬底上。接着，在所述可牺牲层102贴附一层所述石墨烯层103。可选地，所述石墨烯层103也可通过低温溅射沉积形成。可选地，所述石墨烯层103具有一厚度为30微米至50微米。\n\n[0029]请参照图1B所示，本发明接着进行步骤(b)，以形成一柔性衬底104于所述载板10上。较佳地，所述柔性衬底104为一第二聚酰亚胺层。可选地，述第二聚酰亚胺层的一厚度为8微米至10微米。所述柔性衬底104可以通过涂布的方式形成于所述载板10上。\n\n[0030]请参照图1C所示，本发明随后进行步骤(c)，以形成一显示器元件层105于所述柔性衬底104上。较佳地，所述显示器元件层105具有多个有机发光二极管元件。替代地，所述显示器元件层105可以具有多个薄膜晶体管。本领域普通技术人员应当理解，所述显示器元件层105可以为替换成其他适合于柔性显示器中的元件。在所述显示器元件层105上更可形成有液晶层、彩膜层、滤光片层或盖板层等，在此不一一赘述。\n\n[0031]请参照图1D所示，本发明最后进行步骤(d)，以移除所述刚性衬底101及所述可牺牲层102。较佳地，所述步骤(d)更包含：对所述第一聚酰亚胺层施加一激光，以使所述第一聚酰亚胺层裂解而移除所述刚性衬底101及所述可牺牲层102。在移除所述刚性衬底101及所述可牺牲层102，所述石墨烯层103保留所述柔性衬底104下。如此，所述柔性衬底104剥离之后转移到后续的制程，所述石墨烯层103能够保护所述柔性衬底104以避免划伤的风险，从而避免对后续的贴合工艺产生负面影响，导致良率降低。再者，所述石墨烯层103能够有效释放柔性显示器在弯折时所产生的应力，并可以提升柔性显示器的弯折能力。另外，由于所述第一聚酰亚胺层的所述厚度为1微米至2微米，所述第一聚酰亚胺层可完全经由所述激光裂解汽化而不会残留在所述刚性衬底101上，使得所述刚性衬底101可以回收再使用，且所述第一聚酰亚胺层不会残留于所述石墨烯层103上，进而污染后续制程而造成良率下降。再者，所述石墨烯层103能够保护所述柔性衬底104及形成在所述柔性衬底104上的所述显示器元件层105，免于对所述第一聚酰亚胺层施加所述激光时，破坏所述柔性衬底104及形成在所述柔性衬底104上的所述显示器元件层105。所述石墨烯层103具有所述厚度为30微米至50微米时，可以有效地保护所述柔性衬底104及形成在所述柔性衬底104上的所述显示器元件层105，又不会大幅增加产品的成本，极具经济效益。\n\n[0032]再者，本发明另一实施例另提供一种经由上文所述的方法制造的一种显示器结构，所述显示器结构包含：\n\n[0033]一石墨烯层；\n\n[0034]一聚酰亚胺层，设置于所述石墨烯层上；及\n\n[0035]一显示器元件层，设置于所述聚酰亚胺层上。\n\n[0036]较佳地，所述聚酰亚胺的一厚度为8微米至10微米；及所述石墨烯层具有一厚度为30微米至50微米。\n\n[0037]另外，本发明另一实施例另提供一种经由上文所述的方法制造的一种显示器载板结构，所述显示器载板结构包含：\n\n[0038]一载板，依序形成有一刚性衬底、一可牺牲层及一石墨烯层。\n\n[0039]较佳地，所述刚性衬底为一玻璃衬底，所述可牺牲层为一第一聚酰亚胺层。\n\n[0040]较佳地，所述第一聚酰亚胺层的一厚度为1微米至2微米。\n\n[0041]较佳地，所述石墨烯层具有一厚度为30微米至50微米。\n\n[0042]较佳地，所述石墨烯层通过低温溅射沉积形成。\n\n[0043]如上所述，相较于现有的问题，却也常因所述柔性衬底剥离之后转移到下一站贴合作业之前，而导致会有划伤的风险，从而对后续的贴合工艺产生负面影响，导致良率降低。再者，利用激光将所述柔性衬底与所述玻璃衬底的接触面高温裂解，而导致因为激光的高温破坏显示器的结构。再者，所述柔性衬底高温裂解后，而导致部分的柔性衬底残留在所述玻璃衬底上，或部分的所述柔性衬底残留在所述柔性衬底上，影响后续制程。本发明的显示器结构及制造方法通过其通过使用可牺牲层及石墨烯层，从而避免利用激光剥离时破坏显示器的结构，及于制造流程中保护柔性衬底，并增加柔性衬底的弯折能力。\n\n[0044]本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。');
INSERT INTO `os_patent_instruction_text` VALUES (10654, 23708, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种液晶显示面板及显示装置。\n\n背景技术\n\n[0002]迷你发光二极管(Mini LED)显示装置是一种在一个基板上集成微米级的LED阵列作为显示像素来实现图像显示的显示装置，其每一个像素均可定址、单独驱动点亮，属于自发光显示器，其耗电量小，且色彩饱和度接近OLED，且成本较低，很多厂商将其作为目前的研究重点。\n\n[0003]如图1所示，为现有背光模组的结构示意图，其包括背板11，设置在背板上的背光源12，驱动板13，后盖14，光学膜片15，所述背板11需要通过一连接线16与驱动板13相连，且现有显示装置多采用多背板拼接方式实现，每个所述背板11均需通过所述连接线16与所述驱动板13连接，即Mini-LED作为背光模组内的背光光源时，需要单独的驱动芯片进行驱动，驱动芯片设置在驱动板(一个单独的电路板)上，增加了背光模组内电路板的数量，进而导致背光模组厚度较大。\n\n[0004]因此，现有技术存在迷你发光二极管背光模组过厚的技术问题。\n\n发明内容\n\n[0005]本发明提供一种液晶显示面板及显示装置，以缓解现有的迷你发光二极管背光模组过厚的技术问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明提供一种液晶显示面板，包括：\n\n[0008]阵列基板；\n\n[0009]彩膜基板，与所述阵列基板对盒设置；\n\n[0010]背光光源驱动电路，用于驱动背光模组内的背光光源，设置在所述阵列基板上。\n\n[0011]在本发明的液晶显示面板中，所述背光光源驱动电路包括驱动芯片和连接端子。\n\n[0012]在本发明的液晶显示面板中，所述连接端子设置在所述阵列基板的第一侧边，所述第一侧边上形成有栅极驱动电路。\n\n[0013]在本发明的液晶显示面板中，所述连接端子包括设置在所述阵列基板的第一侧边上的第一连接端子，以及设置在所述阵列基板的第二侧边上的第二连接端子，所述第一侧边和所述第二侧边位于所述阵列基板相对两侧，且形成有栅极驱动电路。\n\n[0014]在本发明的液晶显示面板中，所述连接端子设置在所述阵列基板的底边，所述底边上形成有源极驱动电路。\n\n[0015]在本发明的液晶显示面板中，所述驱动芯片设置在所述阵列基板的第一侧边，所述第一侧边上形成有栅极驱动电路。\n\n[0016]在本发明的液晶显示面板中，所述驱动芯片包括设置在所述阵列基板的第一侧边上的第一驱动芯片，以及设置在所述阵列基板的第二侧边上的第二驱动芯片，所述第一侧边和所述第二侧边位于所述阵列基板相对两侧，且形成有栅极驱动电路。\n\n[0017]在本发明的液晶显示面板中，所述驱动芯片设置在所述阵列基板的底边，所述底边上形成有源极驱动电路。\n\n[0018]本发明还提供一种显示装置，包括：\n\n[0019]背光板，所述背光板上设置有背光光源；\n\n[0020]液晶显示面板，包括背光光源驱动电路；\n\n[0021]连接电路，用于连接所述背光光源驱动电路和所述背光光源。\n\n[0022]在本发明的显示装置中，所述液晶显示面板包括对盒设置的阵列基板和彩膜基板，所述背光光源驱动电路设置在所述阵列基板上。\n\n[0023]本发明的有益效果为：本发明提供一种液晶显示面板及显示装置，所述液晶显示面板包括阵列基板；彩膜基板，与所述阵列基板对盒设置；背光光源驱动电路，用于驱动背光模组内的背光光源，设置在所述阵列基板上；通过在所述阵列基板上设置背光光源驱动电路，所述背光光源驱动电路和所述背光光源直接连接，所述背光模组内不需要多余的电路板，因此减小了背光模组厚度，缓解了现有的迷你发光二极管背光模组过厚的技术问题，同时使结构简单，降低了成本。\n\n附图说明\n\n[0024]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0025]图1为现有背光模组的结构示意图；\n\n[0026]图2为本发明实施例提供的显示装置的第一种结构示意图；\n\n[0027]图3为本发明实施例提供的显示面板的平面结构示意图；\n\n[0028]图4为本发明实施例提供的显示装置的第二种结构示意图。\n\n具体实施方式\n\n[0029]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0030]本发明提供一种液晶显示面板及显示装置，以缓解现有的迷你发光二极管背光模组过厚的技术问题。\n\n[0031]如图2所示，为本发明实施例提供的显示装置的结构示意图，本实施例的显示装置包括背光板21，连接电路22以及液晶显示面板23，所述背光板21上设置有背光光源210，所述液晶显示面板23上设置有背光光源驱动电路230，所述连接电路22用于连接所述背光光源驱动电路230和所述背光光源210。\n\n[0032]所述液晶显示面板23包括彩膜基板231、阵列基板232，以及设置在所述阵列基板231上的背光光源驱动电路230。\n\n[0033]所述阵列基板232与所述彩膜基板231对盒设置，所述彩膜基板231位于所述阵列基板232上方，两者之前还设置有液晶层(图未示出)，所述彩膜基板231和所述阵列基板232叠加组合为液晶盒，所述液晶层设置于所述液晶盒内。\n\n[0034]所述背光光源驱动电路230设置在所述阵列基板232上，用于驱动背光模组内的所述背光光源210。所述背光光源驱动电路230包括驱动芯片2301和连接端子2302。\n\n[0035]在一种实施例中，所述阵列基板232比所述彩膜基板231的宽度大，此时，所述背光光源驱动电路230设置在所述阵列基板232与所述彩膜基板231相对的一侧表面上。\n\n[0036]在一种实施例中，所述阵列基板232和所述彩膜基板231的宽度相等，例如所述液晶显示面板23为窄边框设计，此时，所述背光光源驱动电路230设置在所述阵列基板232的侧面上。\n\n[0037]所述背光光源驱动电路230在所述阵列基板232上的具体位置结合图3说明。\n\n[0038]如图3中的(a)所示，当所述阵列基板232比所述彩膜基板231的宽度大时，所述驱动芯片2301和所述连接端子2302设置在所述阵列基板232的第一侧边2320处，所述第一侧边2320上形成有栅极驱动电路。\n\n[0039]当所述阵列基板232和所述彩膜基板231的宽度相等时，所述驱动芯片2301和所述连接端子2302设置在所述阵列基板232的第一侧面23201处，与所述第一侧面23201相邻的所述第一侧边2320上形成有栅极驱动电路。\n\n[0040]如图3中的(b)所示，当所述阵列基板232比所述彩膜基板231的宽度大时，所述连接端子2302包括设置在所述阵列基板232的第一侧边2321上的第一连接端子23021，以及设置在所述阵列基板232的第二侧边上2322的第二连接端子23022，所述驱动芯片2301包括设置在所述阵列基板232的第一侧边2321上的第一驱动芯片23011，以及设置在所述阵列基板232的第二侧边2322上的第二驱动芯片23012，所述第一侧边2321和所述第二侧边2322位于所述阵列基板232相对两侧，且形成有栅极驱动电路。\n\n[0041]当所述阵列基板232和所述彩膜基板231的宽度相等，所述第一连接端子23021和第一驱动芯片23011设置在所述阵列基板232的第一侧面23211上，所述第二连接端子23022和第二驱动芯片23012设置在所述阵列基板232的第二侧面23221上。所述第一侧面23211与所述第一侧边2321相邻，所述第二侧面23221与所述第二侧边2322相邻，所述第一侧边2321和所述第二侧边2322位于所述阵列基板232相对两侧，且形成有栅极驱动电路。\n\n[0042]如图3中的(c)所示，当所述阵列基板232比所述彩膜基板231的宽度大时，所述驱动芯片2301和所述连接端子2302设置在所述阵列基板232的底边2323处，所述底边2323上形成有源极驱动电路。\n\n[0043]当所述阵列基板232和所述彩膜基板231的宽度相等时，所述驱动芯片2301和所述连接端子2302设置在所述阵列基板232的底面23231上，与所述底面23231相邻的所述底边2323上形成有源极驱动电路。\n\n[0044]在一种实施例中，所述背光板21上设置有背光光源210，所述背光光源为迷你发光二极管(Mini LED)，所述连接电路22用于连接所述背光光源驱动电路230和所述背光光源210。\n\n[0045]在一种实施例中，所述背光板21为柔性电路板，所述连接电路22由所述柔性电路板延伸形成，所述柔性电路板的一端与所述背光光源驱动电路230的所述连接端子2302相连。\n\n[0046]在一种实施例中，所述背光板21为金属芯印刷电路板，所述连接电路22为柔性电路板，所述金属芯印刷电路板设置有所述背光光源210的表面上，设置有焊盘，所述柔性电路板的一端通过所述焊盘焊接在所述金属芯印刷电路板上，所述柔性电路板的另一端与所述背光光源驱动电路230的所述连接端子2302相连。\n\n[0047]在一种实施例中，所述背光板21为金属芯印刷电路板，所述连接电路22为柔性电路板，所述金属芯印刷电路板未设置有所述背光光源210的表面上，设置有焊盘，所述柔性电路板的一端通过所述焊盘焊接在所述金属芯印刷电路板上，所述柔性电路板的另一端与所述背光光源驱动电路230的所述连接端子2302相连。\n\n[0048]背光光源为迷你发光二极管的显示装置多采用多个背光板拼接方式实现，每个背光板均需通过连接电路与背光光源驱动电路连接，因此背光光源驱动电路在阵列基板上的具体位置可以有多种选择，下面结合图4进行说明。\n\n[0049]本实施例的显示装置包括背光板，连接电路以及液晶显示面板。\n\n[0050]所述背光板包括第一背光板411、第二背光板412、以及第三背光板413，三者拼接组成所述所述背光板，所述第一背光板411上设置有背光光源401，所述第二背光板412上设置有背光光源402，所述第三背光板413上设置有背光光源403。\n\n[0051]所述液晶显示面板包括彩膜基板431、阵列基板432，以及设置在所述阵列基板431上的背光光源驱动电路430，所述背光光源驱动电路430包括第一背光光源驱动电路4301、第二背光光源驱动电路4302、以及第三背光光源驱动电路4303，所述第一背光光源驱动电路4301用于驱动背光模组内的所述第一背光光源401，所述第二背光光源驱动电路4302用于驱动背光模组内的所述第二背光光源402，所述第三背光光源驱动电路4303用于驱动背光模组内的所述第三背光光源403。\n\n[0052]所述连接电路用于连接所述背光光源驱动电路430和背光光源，所述连接电路包括第一连接电路421、第二连接电路422.以及第三连接电路423。所述第一连接电路421用于连接所述第一背光光源驱动电路4301和所述第一背光光源401，所述第二连接电路422用于连接所述第二背光光源驱动电路4302和所述第二背光光源402，所述第三连接电路423用于连接所述第三背光光源驱动电路4303和所述第三背光光源403。\n\n[0053]所述阵列基板432包括第一侧边4321，第二侧边4322，第三侧边4323。所述第一侧边4321和所述第二侧边4322位于所述阵列基板432相对两侧，且形成有栅极驱动电路，所述第三侧边4323为所述阵列基板432的底边，且形成有源极驱动电路。\n\n[0054]在一种实施例中，所述第一背光光源驱动电路4301、所述第二背光光源驱动电路4302均设置在所述阵列基板432的所述第一侧边4321处，所述第三背光光源驱动电路4303设置在所述阵列基板432的所述第三侧边4323处。\n\n[0055]在一种实施例中，所述第一背光光源驱动电路4301、所述第二背光光源驱动电路4302、以及所述第三背光光源驱动电路4303均设置在所述阵列基板432的所述第一侧边4321处。\n\n[0056]在一种实施例中，所述第一背光光源驱动电路4301、所述第二背光光源驱动电路4302、以及所述第三背光光源驱动电路4303均设置在所述阵列基板432的所述第二侧边4322处。\n\n[0057]在一种实施例中，所述第一背光光源驱动电路4301设置在所述阵列基板432的所述第一侧边4321处，所述第二背光光源驱动电路4302设置在所述阵列基板432的所述第二侧边4322处，所述第三背光光源驱动电路4303设置在所述阵列基板432的所述第三侧边4323处。\n\n[0058]在一种实施例中，所述第一背光光源驱动电路4301设置在所述阵列基板432的所述第一侧边4321处和所述第二侧边4322处，所述第二背光光源驱动电路4302设置在所述阵列基板432的所述第一侧边4321处和所述第二侧边4322处，所述第三背光光源驱动电路4303设置在所述阵列基板432的所述第三侧边4323处。\n\n[0059]需要说明的是，所述第一背光光源驱动电路4301、所述第二背光光源驱动电路4302、以及所述第三背光光源驱动电路4303的设置方式不以图中为限，例如还可以设置在与所述第一侧边4321相邻的第一侧面43211上、与所述第二侧边4322相邻的第一侧面43221上、以及与所述第三侧边4323相邻的第一侧面43231上。具体设置方式与上述的液晶显示面板的优选实施例中的相关描述相同或相似，具体请参见上述液晶显示面板的优选实施例中的相关描述。\n\n[0060]根据上述实施例可知：\n\n[0061]本发明实施例提供一种液晶显示面板及显示装置，所述液晶显示面板包括阵列基板；彩膜基板，与所述阵列基板对盒设置；背光光源驱动电路，用于驱动背光模组内的背光光源，设置在所述阵列基板上；通过在所述阵列基板上设置背光光源驱动电路，所述背光光源驱动电路和所述背光光源直接连接，所述背光模组内不需要多余的电路板，因此减小了背光模组厚度，缓解了现有的迷你发光二极管背光模组过厚的技术问题，同时使结构简单，降低了成本。\n\n[0062]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种液晶显示面板及显示装置。\n\n背景技术\n\n[0002]迷你发光二极管(Mini LED)显示装置是一种在一个基板上集成微米级的LED阵列作为显示像素来实现图像显示的显示装置，其每一个像素均可定址、单独驱动点亮，属于自发光显示器，其耗电量小，且色彩饱和度接近OLED，且成本较低，很多厂商将其作为目前的研究重点。\n\n[0003]如图1所示，为现有背光模组的结构示意图，其包括背板11，设置在背板上的背光源12，驱动板13，后盖14，光学膜片15，所述背板11需要通过一连接线16与驱动板13相连，且现有显示装置多采用多背板拼接方式实现，每个所述背板11均需通过所述连接线16与所述驱动板13连接，即Mini-LED作为背光模组内的背光光源时，需要单独的驱动芯片进行驱动，驱动芯片设置在驱动板(一个单独的电路板)上，增加了背光模组内电路板的数量，进而导致背光模组厚度较大。\n\n[0004]因此，现有技术存在迷你发光二极管背光模组过厚的技术问题。\n\n发明内容\n\n[0005]本发明提供一种液晶显示面板及显示装置，以缓解现有的迷你发光二极管背光模组过厚的技术问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明提供一种液晶显示面板，包括：\n\n[0008]阵列基板；\n\n[0009]彩膜基板，与所述阵列基板对盒设置；\n\n[0010]背光光源驱动电路，用于驱动背光模组内的背光光源，设置在所述阵列基板上。\n\n[0011]在本发明的液晶显示面板中，所述背光光源驱动电路包括驱动芯片和连接端子。\n\n[0012]在本发明的液晶显示面板中，所述连接端子设置在所述阵列基板的第一侧边，所述第一侧边上形成有栅极驱动电路。\n\n[0013]在本发明的液晶显示面板中，所述连接端子包括设置在所述阵列基板的第一侧边上的第一连接端子，以及设置在所述阵列基板的第二侧边上的第二连接端子，所述第一侧边和所述第二侧边位于所述阵列基板相对两侧，且形成有栅极驱动电路。\n\n[0014]在本发明的液晶显示面板中，所述连接端子设置在所述阵列基板的底边，所述底边上形成有源极驱动电路。\n\n[0015]在本发明的液晶显示面板中，所述驱动芯片设置在所述阵列基板的第一侧边，所述第一侧边上形成有栅极驱动电路。\n\n[0016]在本发明的液晶显示面板中，所述驱动芯片包括设置在所述阵列基板的第一侧边上的第一驱动芯片，以及设置在所述阵列基板的第二侧边上的第二驱动芯片，所述第一侧边和所述第二侧边位于所述阵列基板相对两侧，且形成有栅极驱动电路。\n\n[0017]在本发明的液晶显示面板中，所述驱动芯片设置在所述阵列基板的底边，所述底边上形成有源极驱动电路。\n\n[0018]本发明还提供一种显示装置，包括：\n\n[0019]背光板，所述背光板上设置有背光光源；\n\n[0020]液晶显示面板，包括背光光源驱动电路；\n\n[0021]连接电路，用于连接所述背光光源驱动电路和所述背光光源。\n\n[0022]在本发明的显示装置中，所述液晶显示面板包括对盒设置的阵列基板和彩膜基板，所述背光光源驱动电路设置在所述阵列基板上。\n\n[0023]本发明的有益效果为：本发明提供一种液晶显示面板及显示装置，所述液晶显示面板包括阵列基板；彩膜基板，与所述阵列基板对盒设置；背光光源驱动电路，用于驱动背光模组内的背光光源，设置在所述阵列基板上；通过在所述阵列基板上设置背光光源驱动电路，所述背光光源驱动电路和所述背光光源直接连接，所述背光模组内不需要多余的电路板，因此减小了背光模组厚度，缓解了现有的迷你发光二极管背光模组过厚的技术问题，同时使结构简单，降低了成本。\n\n附图说明\n\n[0024]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0025]图1为现有背光模组的结构示意图；\n\n[0026]图2为本发明实施例提供的显示装置的第一种结构示意图；\n\n[0027]图3为本发明实施例提供的显示面板的平面结构示意图；\n\n[0028]图4为本发明实施例提供的显示装置的第二种结构示意图。\n\n具体实施方式\n\n[0029]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0030]本发明提供一种液晶显示面板及显示装置，以缓解现有的迷你发光二极管背光模组过厚的技术问题。\n\n[0031]如图2所示，为本发明实施例提供的显示装置的结构示意图，本实施例的显示装置包括背光板21，连接电路22以及液晶显示面板23，所述背光板21上设置有背光光源210，所述液晶显示面板23上设置有背光光源驱动电路230，所述连接电路22用于连接所述背光光源驱动电路230和所述背光光源210。\n\n[0032]所述液晶显示面板23包括彩膜基板231、阵列基板232，以及设置在所述阵列基板231上的背光光源驱动电路230。\n\n[0033]所述阵列基板232与所述彩膜基板231对盒设置，所述彩膜基板231位于所述阵列基板232上方，两者之前还设置有液晶层(图未示出)，所述彩膜基板231和所述阵列基板232叠加组合为液晶盒，所述液晶层设置于所述液晶盒内。\n\n[0034]所述背光光源驱动电路230设置在所述阵列基板232上，用于驱动背光模组内的所述背光光源210。所述背光光源驱动电路230包括驱动芯片2301和连接端子2302。\n\n[0035]在一种实施例中，所述阵列基板232比所述彩膜基板231的宽度大，此时，所述背光光源驱动电路230设置在所述阵列基板232与所述彩膜基板231相对的一侧表面上。\n\n[0036]在一种实施例中，所述阵列基板232和所述彩膜基板231的宽度相等，例如所述液晶显示面板23为窄边框设计，此时，所述背光光源驱动电路230设置在所述阵列基板232的侧面上。\n\n[0037]所述背光光源驱动电路230在所述阵列基板232上的具体位置结合图3说明。\n\n[0038]如图3中的(a)所示，当所述阵列基板232比所述彩膜基板231的宽度大时，所述驱动芯片2301和所述连接端子2302设置在所述阵列基板232的第一侧边2320处，所述第一侧边2320上形成有栅极驱动电路。\n\n[0039]当所述阵列基板232和所述彩膜基板231的宽度相等时，所述驱动芯片2301和所述连接端子2302设置在所述阵列基板232的第一侧面23201处，与所述第一侧面23201相邻的所述第一侧边2320上形成有栅极驱动电路。\n\n[0040]如图3中的(b)所示，当所述阵列基板232比所述彩膜基板231的宽度大时，所述连接端子2302包括设置在所述阵列基板232的第一侧边2321上的第一连接端子23021，以及设置在所述阵列基板232的第二侧边上2322的第二连接端子23022，所述驱动芯片2301包括设置在所述阵列基板232的第一侧边2321上的第一驱动芯片23011，以及设置在所述阵列基板232的第二侧边2322上的第二驱动芯片23012，所述第一侧边2321和所述第二侧边2322位于所述阵列基板232相对两侧，且形成有栅极驱动电路。\n\n[0041]当所述阵列基板232和所述彩膜基板231的宽度相等，所述第一连接端子23021和第一驱动芯片23011设置在所述阵列基板232的第一侧面23211上，所述第二连接端子23022和第二驱动芯片23012设置在所述阵列基板232的第二侧面23221上。所述第一侧面23211与所述第一侧边2321相邻，所述第二侧面23221与所述第二侧边2322相邻，所述第一侧边2321和所述第二侧边2322位于所述阵列基板232相对两侧，且形成有栅极驱动电路。\n\n[0042]如图3中的(c)所示，当所述阵列基板232比所述彩膜基板231的宽度大时，所述驱动芯片2301和所述连接端子2302设置在所述阵列基板232的底边2323处，所述底边2323上形成有源极驱动电路。\n\n[0043]当所述阵列基板232和所述彩膜基板231的宽度相等时，所述驱动芯片2301和所述连接端子2302设置在所述阵列基板232的底面23231上，与所述底面23231相邻的所述底边2323上形成有源极驱动电路。\n\n[0044]在一种实施例中，所述背光板21上设置有背光光源210，所述背光光源为迷你发光二极管(Mini LED)，所述连接电路22用于连接所述背光光源驱动电路230和所述背光光源210。\n\n[0045]在一种实施例中，所述背光板21为柔性电路板，所述连接电路22由所述柔性电路板延伸形成，所述柔性电路板的一端与所述背光光源驱动电路230的所述连接端子2302相连。\n\n[0046]在一种实施例中，所述背光板21为金属芯印刷电路板，所述连接电路22为柔性电路板，所述金属芯印刷电路板设置有所述背光光源210的表面上，设置有焊盘，所述柔性电路板的一端通过所述焊盘焊接在所述金属芯印刷电路板上，所述柔性电路板的另一端与所述背光光源驱动电路230的所述连接端子2302相连。\n\n[0047]在一种实施例中，所述背光板21为金属芯印刷电路板，所述连接电路22为柔性电路板，所述金属芯印刷电路板未设置有所述背光光源210的表面上，设置有焊盘，所述柔性电路板的一端通过所述焊盘焊接在所述金属芯印刷电路板上，所述柔性电路板的另一端与所述背光光源驱动电路230的所述连接端子2302相连。\n\n[0048]背光光源为迷你发光二极管的显示装置多采用多个背光板拼接方式实现，每个背光板均需通过连接电路与背光光源驱动电路连接，因此背光光源驱动电路在阵列基板上的具体位置可以有多种选择，下面结合图4进行说明。\n\n[0049]本实施例的显示装置包括背光板，连接电路以及液晶显示面板。\n\n[0050]所述背光板包括第一背光板411、第二背光板412、以及第三背光板413，三者拼接组成所述所述背光板，所述第一背光板411上设置有背光光源401，所述第二背光板412上设置有背光光源402，所述第三背光板413上设置有背光光源403。\n\n[0051]所述液晶显示面板包括彩膜基板431、阵列基板432，以及设置在所述阵列基板431上的背光光源驱动电路430，所述背光光源驱动电路430包括第一背光光源驱动电路4301、第二背光光源驱动电路4302、以及第三背光光源驱动电路4303，所述第一背光光源驱动电路4301用于驱动背光模组内的所述第一背光光源401，所述第二背光光源驱动电路4302用于驱动背光模组内的所述第二背光光源402，所述第三背光光源驱动电路4303用于驱动背光模组内的所述第三背光光源403。\n\n[0052]所述连接电路用于连接所述背光光源驱动电路430和背光光源，所述连接电路包括第一连接电路421、第二连接电路422.以及第三连接电路423。所述第一连接电路421用于连接所述第一背光光源驱动电路4301和所述第一背光光源401，所述第二连接电路422用于连接所述第二背光光源驱动电路4302和所述第二背光光源402，所述第三连接电路423用于连接所述第三背光光源驱动电路4303和所述第三背光光源403。\n\n[0053]所述阵列基板432包括第一侧边4321，第二侧边4322，第三侧边4323。所述第一侧边4321和所述第二侧边4322位于所述阵列基板432相对两侧，且形成有栅极驱动电路，所述第三侧边4323为所述阵列基板432的底边，且形成有源极驱动电路。\n\n[0054]在一种实施例中，所述第一背光光源驱动电路4301、所述第二背光光源驱动电路4302均设置在所述阵列基板432的所述第一侧边4321处，所述第三背光光源驱动电路4303设置在所述阵列基板432的所述第三侧边4323处。\n\n[0055]在一种实施例中，所述第一背光光源驱动电路4301、所述第二背光光源驱动电路4302、以及所述第三背光光源驱动电路4303均设置在所述阵列基板432的所述第一侧边4321处。\n\n[0056]在一种实施例中，所述第一背光光源驱动电路4301、所述第二背光光源驱动电路4302、以及所述第三背光光源驱动电路4303均设置在所述阵列基板432的所述第二侧边4322处。\n\n[0057]在一种实施例中，所述第一背光光源驱动电路4301设置在所述阵列基板432的所述第一侧边4321处，所述第二背光光源驱动电路4302设置在所述阵列基板432的所述第二侧边4322处，所述第三背光光源驱动电路4303设置在所述阵列基板432的所述第三侧边4323处。\n\n[0058]在一种实施例中，所述第一背光光源驱动电路4301设置在所述阵列基板432的所述第一侧边4321处和所述第二侧边4322处，所述第二背光光源驱动电路4302设置在所述阵列基板432的所述第一侧边4321处和所述第二侧边4322处，所述第三背光光源驱动电路4303设置在所述阵列基板432的所述第三侧边4323处。\n\n[0059]需要说明的是，所述第一背光光源驱动电路4301、所述第二背光光源驱动电路4302、以及所述第三背光光源驱动电路4303的设置方式不以图中为限，例如还可以设置在与所述第一侧边4321相邻的第一侧面43211上、与所述第二侧边4322相邻的第一侧面43221上、以及与所述第三侧边4323相邻的第一侧面43231上。具体设置方式与上述的液晶显示面板的优选实施例中的相关描述相同或相似，具体请参见上述液晶显示面板的优选实施例中的相关描述。\n\n[0060]根据上述实施例可知：\n\n[0061]本发明实施例提供一种液晶显示面板及显示装置，所述液晶显示面板包括阵列基板；彩膜基板，与所述阵列基板对盒设置；背光光源驱动电路，用于驱动背光模组内的背光光源，设置在所述阵列基板上；通过在所述阵列基板上设置背光光源驱动电路，所述背光光源驱动电路和所述背光光源直接连接，所述背光模组内不需要多余的电路板，因此减小了背光模组厚度，缓解了现有的迷你发光二极管背光模组过厚的技术问题，同时使结构简单，降低了成本。\n\n[0062]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10655, 23709, '技术领域\n\n[0001]本发明涉及一种液晶显示器，尤其涉及一种具有高对比度的超薄液晶显示器。\n\n背景技术\n\n[0002]在现有的液晶显示屏(liquid crystal display,LCD)设计中,通常采用发光二极体(light-emitting diode,LED)作为LCD的光源.但随着显示技术的发展， LCD产品对薄形化与高对比度要求越来越高。\n\n[0003]图1为一现有技术之液晶显示器1的示意图，包括由下而上堆迭的显示模块背板10、LED 20、光学部材30、以及LCD显示屏40。由于LED 20的尺寸较大，光源照射范围也比较大，导致对比度降低，无可避免须加大混光距离D(图1中双头箭号所示)。因此，现有的液晶显示器因采用了LED作为光源，而难以达到使用者的要求。\n\n[0004]为了满足使用者对于LCD产品的薄形化与高对比度的要求，本发明提出了一种具有高对比度的超薄液晶显示器。\n\n发明内容\n\n[0005]有鉴于此，本发明提供一种具有高对比度的超薄液晶显示器(liquid crystaldisplay,LCD)，采用了发光二极管(LED)基板、薄膜晶体管(TFT)基板、以及彩膜(CF)基板所组成的三层基板结构，结合次毫米发光二极管(Mini LED) 作为光源，其中由于Mini LED的尺寸及其节距(pitch)均非常小，以至于每颗光源的照射范也相对小，故可大幅提升LCD产品的对比度。同时，本发明之液晶显示器还具有较小的混光距离设计，使三层基板结构可贴合为一体，大幅降低LCD产品的厚度。\n\n[0006]据此，依据本发明的一实施例，本发明提供了一种具有高对比度的超薄液晶显示器(liquid crystal display,LCD)，采用了发光二极管(LED)基板、薄膜晶体管(TFT)基板、以及彩膜(CF)基板所组成的三层基板结构，结合次毫米发光二极管(Mini LED)作为光源，其中由于Mini LED的尺寸及其节距(pitch)均非常小，以至于每颗光源的照射范也相对小，故可大幅提升LCD产品的对比度。同时，本发明之液晶显示器还具有较小的混光距离设计，使三层基板结构可贴合为一体，大幅降低LCD产品的厚度。\n\n[0007]据此，本发明提供一种液晶显示器(liquid crystal display,LCD)，包括：一发光二极管(LED)基板；多个次毫米发光二极管(Mini LED)，配置于所述 LED基板的一上表面；一薄膜晶体管(TFT)基板，配置于所述LED基板之上；以及一彩膜(CF)基板，配置于所述TFT基板之上。\n\n[0008]依据本发明的一实施例，所述液晶显示器，更包括一液晶层(LCD)配置于所述TFT基板及所述CF基板之间。\n\n[0009]依据本发明的一实施例，所述液晶显示器，更包括：一涂胶层，配置于所述LED基板、所述TFT基板、以及所述CF基板所形成之一三层基板结构的一侧壁上。\n\n[0010]依据本发明的一实施例，所述涂胶层包括一不透明材料。\n\n[0011]依据本发明的一实施例，所述LED基板的一下表面为一图案化的背板。\n\n[0012]依据本发明的一实施例，所述LED基板、所述TFT基板、以及所述CF 基板分别独立地为一玻璃基板或一柔性基板。\n\n[0013]依据本发明的一实施例，所述多个Mini LED彼此之间的间距范围为(0.2 mm至5mm，优选为0.2mm至小于等于0.6mm。\n\n[0014]依据本发明的一实施例，所述多个Mini LED的节距(pitch)范围0.2mm 至5mm，优选为0.2mm至1.05mm。\n\n[0015]依据本发明的一实施例，所述Mini LED的尺寸大小介于0.1mm至0.9 mm。\n\n[0016]依据本发明的一实施例，所述液晶显示器的厚度为0.8mm至20mm，优选为1.9mm。\n\n[0017]依据本发明的一实施例，在所述液晶显示器中，所述次毫米发光二极管 (MiniLED)与所述TFT基板之间具有一混光距离，所述混光距离范围为0.1 至18mm。\n\n附图说明\n\n[0018]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1为一现有技术之液晶显示器的示意图。\n\n[0020]图2为依据本发明的一实施例之液晶显示器的示意图。\n\n具体实施方式\n\n[0021]为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式作详细说明。\n\n[0022]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[纵向]、[横向]、[上]、[下]、[前]、 [后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0023]本发明提供了一种具有高对比度的超薄液晶显示器(liquid crystal display,LCD)，采用了发光二极管(LED)基板、薄膜晶体管(TFT)基板、以及彩膜(CF) 基板所组成的三层基板结构，结合次毫米发光二极管(Mini LED)作为光源，其中由于Mini LED的尺寸及其节距(pitch)均非常小，以至于每颗光源的照射范也相对小，故可大幅提升LCD产品的对比度。同时，本发明之液晶显示器还具有较小的混光距离设计，使三层基板结构可贴合为一体，大幅降低LCD 产品的厚度。\n\n[0024]图2为依据本发明的一实施例之液晶显示器的示意图。具体的，如图2 所示，本发明提供一种液晶显示器(liquid crystal display,LCD)2，包括：一发光二极管(LED)基板11；多个次毫米发光二极管(Mini LED)21，配置于所述 LED基板11的一上表面；一薄膜晶体管(TFT)基板51，配置于所述LED基板11之上；以及一彩膜(CF)基板41，配置于所述TFT基板11之上。\n\n[0025]本发明所提供的液晶显示器2，还可包括一TFT数组(array)配置于所述 TFT基板51上。据此，此领域技术人员可于此TFT基板进行数组设计以及液晶封装，进而实现液晶的旋转来显示不同图案的功能。\n\n[0026]依据本发明，此领域技术人员可进一步地于CF基板进行彩膜设计，以实现多种颜色的画面显示。具体的，如图2所示，本发明提供的液晶显示器 2，更包括一液晶层(LCD)31配置于所述TFT基板51及所述CF基板41之间。\n\n[0027]如图2所示，本发明提供的液晶显示器2，更包括：一涂胶层61，配置于所述LED基板11、所述TFT基板51、以及所述CF基板41所形成之一三层基板结构的一侧壁上,以完成液晶显示器2的封装。在本实施例中，所述涂胶层可包括一不透明材料。\n\n[0028]在本发明的液晶显示器中，所述LED基板的一下表面可为一图案化的背板或模块，以作为整个显示模块或电视终端的背板，更可根据产品设计的需求,利用玻璃的特性于LED玻璃基板的背面进行图案设计等等，以提升产品的外观性。\n\n[0029]在本发明的液晶显示器中，所述LED基板、所述TFT基板、以及所述 CF基板分别独立地为一玻璃基板或一柔性基板。\n\n[0030]依据本发明的一实施例，所述多个Mini LED彼此之间的间距范围为0.2 mm至5mm，优选为0.2mm至小于或等于0.6mm；且所述Mini LED的尺寸大小介于0.1mm至0.9mm。如此一来，所述多个Mini LED的节距(pitch) 范围0.2mm至5mm，优选为0.2mm至1.05mm。\n\n[0031]此外，在本发明的液晶显示器中，所述次毫米发光二极管(Mini LED)与所述TFT基板之间具有一混光距离D2，如图2所示，其中所述混光距离D2 范围为0.1至18mm。\n\n[0032]据此，由于Mini LED的尺寸及其节距(pitch)以及所需混光距离均非常小，故本发明的液晶显示器可将其厚度控制在0.8mm至20mm，优选为1.9mm。\n\n[0033]依据前述实施例可知，本发明提供了一种具有高对比度的超薄液晶显示器(liquid crystal display,LCD)，采用了发光二极管(LED)基板、薄膜晶体管 (TFT)基板、以及彩膜(CF)基板所组成的三层基板结构，结合次毫米发光二极管(Mini LED)作为光源，其中由于Mini LED的尺寸及其节距(pitch)均非常小，以至于每颗光源的照射范也相对小，故可大幅提升LCD产品的对比度。同时，本发明之液晶显示器还具有较小的混光距离设计，使三层基板结构可贴合为一体，大幅降低LCD产品的厚度。\n\n[0034]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及一种液晶显示器，尤其涉及一种具有高对比度的超薄液晶显示器。\n\n背景技术\n\n[0002]在现有的液晶显示屏(liquid crystal display,LCD)设计中,通常采用发光二极体(light-emitting diode,LED)作为LCD的光源.但随着显示技术的发展， LCD产品对薄形化与高对比度要求越来越高。\n\n[0003]图1为一现有技术之液晶显示器1的示意图，包括由下而上堆迭的显示模块背板10、LED 20、光学部材30、以及LCD显示屏40。由于LED 20的尺寸较大，光源照射范围也比较大，导致对比度降低，无可避免须加大混光距离D(图1中双头箭号所示)。因此，现有的液晶显示器因采用了LED作为光源，而难以达到使用者的要求。\n\n[0004]为了满足使用者对于LCD产品的薄形化与高对比度的要求，本发明提出了一种具有高对比度的超薄液晶显示器。\n\n发明内容\n\n[0005]有鉴于此，本发明提供一种具有高对比度的超薄液晶显示器(liquid crystaldisplay,LCD)，采用了发光二极管(LED)基板、薄膜晶体管(TFT)基板、以及彩膜(CF)基板所组成的三层基板结构，结合次毫米发光二极管(Mini LED) 作为光源，其中由于Mini LED的尺寸及其节距(pitch)均非常小，以至于每颗光源的照射范也相对小，故可大幅提升LCD产品的对比度。同时，本发明之液晶显示器还具有较小的混光距离设计，使三层基板结构可贴合为一体，大幅降低LCD产品的厚度。\n\n[0006]据此，依据本发明的一实施例，本发明提供了一种具有高对比度的超薄液晶显示器(liquid crystal display,LCD)，采用了发光二极管(LED)基板、薄膜晶体管(TFT)基板、以及彩膜(CF)基板所组成的三层基板结构，结合次毫米发光二极管(Mini LED)作为光源，其中由于Mini LED的尺寸及其节距(pitch)均非常小，以至于每颗光源的照射范也相对小，故可大幅提升LCD产品的对比度。同时，本发明之液晶显示器还具有较小的混光距离设计，使三层基板结构可贴合为一体，大幅降低LCD产品的厚度。\n\n[0007]据此，本发明提供一种液晶显示器(liquid crystal display,LCD)，包括：一发光二极管(LED)基板；多个次毫米发光二极管(Mini LED)，配置于所述 LED基板的一上表面；一薄膜晶体管(TFT)基板，配置于所述LED基板之上；以及一彩膜(CF)基板，配置于所述TFT基板之上。\n\n[0008]依据本发明的一实施例，所述液晶显示器，更包括一液晶层(LCD)配置于所述TFT基板及所述CF基板之间。\n\n[0009]依据本发明的一实施例，所述液晶显示器，更包括：一涂胶层，配置于所述LED基板、所述TFT基板、以及所述CF基板所形成之一三层基板结构的一侧壁上。\n\n[0010]依据本发明的一实施例，所述涂胶层包括一不透明材料。\n\n[0011]依据本发明的一实施例，所述LED基板的一下表面为一图案化的背板。\n\n[0012]依据本发明的一实施例，所述LED基板、所述TFT基板、以及所述CF 基板分别独立地为一玻璃基板或一柔性基板。\n\n[0013]依据本发明的一实施例，所述多个Mini LED彼此之间的间距范围为(0.2 mm至5mm，优选为0.2mm至小于等于0.6mm。\n\n[0014]依据本发明的一实施例，所述多个Mini LED的节距(pitch)范围0.2mm 至5mm，优选为0.2mm至1.05mm。\n\n[0015]依据本发明的一实施例，所述Mini LED的尺寸大小介于0.1mm至0.9 mm。\n\n[0016]依据本发明的一实施例，所述液晶显示器的厚度为0.8mm至20mm，优选为1.9mm。\n\n[0017]依据本发明的一实施例，在所述液晶显示器中，所述次毫米发光二极管 (MiniLED)与所述TFT基板之间具有一混光距离，所述混光距离范围为0.1 至18mm。\n\n附图说明\n\n[0018]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1为一现有技术之液晶显示器的示意图。\n\n[0020]图2为依据本发明的一实施例之液晶显示器的示意图。\n\n具体实施方式\n\n[0021]为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式作详细说明。\n\n[0022]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[纵向]、[横向]、[上]、[下]、[前]、 [后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0023]本发明提供了一种具有高对比度的超薄液晶显示器(liquid crystal display,LCD)，采用了发光二极管(LED)基板、薄膜晶体管(TFT)基板、以及彩膜(CF) 基板所组成的三层基板结构，结合次毫米发光二极管(Mini LED)作为光源，其中由于Mini LED的尺寸及其节距(pitch)均非常小，以至于每颗光源的照射范也相对小，故可大幅提升LCD产品的对比度。同时，本发明之液晶显示器还具有较小的混光距离设计，使三层基板结构可贴合为一体，大幅降低LCD 产品的厚度。\n\n[0024]图2为依据本发明的一实施例之液晶显示器的示意图。具体的，如图2 所示，本发明提供一种液晶显示器(liquid crystal display,LCD)2，包括：一发光二极管(LED)基板11；多个次毫米发光二极管(Mini LED)21，配置于所述 LED基板11的一上表面；一薄膜晶体管(TFT)基板51，配置于所述LED基板11之上；以及一彩膜(CF)基板41，配置于所述TFT基板11之上。\n\n[0025]本发明所提供的液晶显示器2，还可包括一TFT数组(array)配置于所述 TFT基板51上。据此，此领域技术人员可于此TFT基板进行数组设计以及液晶封装，进而实现液晶的旋转来显示不同图案的功能。\n\n[0026]依据本发明，此领域技术人员可进一步地于CF基板进行彩膜设计，以实现多种颜色的画面显示。具体的，如图2所示，本发明提供的液晶显示器 2，更包括一液晶层(LCD)31配置于所述TFT基板51及所述CF基板41之间。\n\n[0027]如图2所示，本发明提供的液晶显示器2，更包括：一涂胶层61，配置于所述LED基板11、所述TFT基板51、以及所述CF基板41所形成之一三层基板结构的一侧壁上,以完成液晶显示器2的封装。在本实施例中，所述涂胶层可包括一不透明材料。\n\n[0028]在本发明的液晶显示器中，所述LED基板的一下表面可为一图案化的背板或模块，以作为整个显示模块或电视终端的背板，更可根据产品设计的需求,利用玻璃的特性于LED玻璃基板的背面进行图案设计等等，以提升产品的外观性。\n\n[0029]在本发明的液晶显示器中，所述LED基板、所述TFT基板、以及所述 CF基板分别独立地为一玻璃基板或一柔性基板。\n\n[0030]依据本发明的一实施例，所述多个Mini LED彼此之间的间距范围为0.2 mm至5mm，优选为0.2mm至小于或等于0.6mm；且所述Mini LED的尺寸大小介于0.1mm至0.9mm。如此一来，所述多个Mini LED的节距(pitch) 范围0.2mm至5mm，优选为0.2mm至1.05mm。\n\n[0031]此外，在本发明的液晶显示器中，所述次毫米发光二极管(Mini LED)与所述TFT基板之间具有一混光距离D2，如图2所示，其中所述混光距离D2 范围为0.1至18mm。\n\n[0032]据此，由于Mini LED的尺寸及其节距(pitch)以及所需混光距离均非常小，故本发明的液晶显示器可将其厚度控制在0.8mm至20mm，优选为1.9mm。\n\n[0033]依据前述实施例可知，本发明提供了一种具有高对比度的超薄液晶显示器(liquid crystal display,LCD)，采用了发光二极管(LED)基板、薄膜晶体管 (TFT)基板、以及彩膜(CF)基板所组成的三层基板结构，结合次毫米发光二极管(Mini LED)作为光源，其中由于Mini LED的尺寸及其节距(pitch)均非常小，以至于每颗光源的照射范也相对小，故可大幅提升LCD产品的对比度。同时，本发明之液晶显示器还具有较小的混光距离设计，使三层基板结构可贴合为一体，大幅降低LCD产品的厚度。\n\n[0034]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10656, 23710, '技术领域\n\n[0001]本发明是关于一种有源矩阵微发光二极管(Active Matrix Micro LightEmitting Diode,AM-Micro LED)显示面板，所述显示面板的底面为发光面，且所述显示面板的顶面周缘设置有电性接合(Electrical Bonding)构件以用于接合积体电路(Integrated Circuit,IC)晶片，例如源极驱动IC及栅极驱动IC、电源线、公共电极线等。由于所述显示面板的接合构件集中在顶面，而所述底面为发光面且不具有任何接合构件，因此所述发光面周围无须设置非显示区的边框，进而可通过将多个上述显示面板拼接而得到具有无缝显示的显示面板组件。\n\n背景技术\n\n[0002]请参照图1，现有技术的有源矩阵液晶显示面板(AMLCD)或有源矩阵有机发光二极管(AMOLED)显示面板90在显示区900周围设置有边框91以用于接合(Bonding)驱动积体电路(Integrated Circuit,IC，包括Gate IC或Source IC)，例如栅极薄膜覆晶封装(Chip OnFilm,COF)92和源极COF 93。由于所述边框91四周存在Bonding区域及周边的走线，导致显示面板90的边框具有一定的宽度而形成一非显示区。因此，当需要拼接多个显示面板90组成一个更大的显示面板组件时，相邻的显示面板90间的边框91形成明显的拼接缝而影响整体显示效果。现有技术的液晶显示面板拼接显示技术可将拼接缝限制在略小于2mm，然而，所述约2mm的拼接缝仍有显着影响视觉，降低了显示面板组件的整体视觉效果。\n\n[0003]故，有必要提供一种有源矩阵微发光二极管显示面板，以解决现有技术所存在的问题。\n\n发明内容\n\n[0004]本发明人有鉴于现有技术的多个显示面板拼接后存在有接缝而无法达到无缝显示效果的问题，提供一种有源矩阵微发光二极管(Active Matrix Micro Light EmittingDiode,AM-Micro LED)显示面板。\n\n[0005]本发明的主要目的在于提供一种有源矩阵微发光二极管显示面板，所述显示面板的底面为发光面，且所述显示面板的顶面周缘设置有电性接合(Electrical Bonding)构件以用于接合积体电路(Integrated Circuit,IC)晶片，例如源极驱动IC及栅极驱动IC、电源线、公共电极线等。由于所述显示面板的接合构件集中在顶面，而所述底面为发光面且不具有任何接合构件，因此所述发光面周围无须设置非显示区的边框，因此可通过将多个上述显示面板拼接而得到具有无缝显示的显示面板组件。\n\n[0006]为达上述目的，所述有源矩阵微发光二极管显示面板包括：\n\n[0007]玻璃基板，所述玻璃基板的底面作为发光面，并且作为显示区，其中，所述底面的周缘上不设置作为非显示区的边框；\n\n[0008]平坦层，与所述玻璃基板相对设置，所述平坦层顶面作为接合面；\n\n[0009]微发光二极管单元，设置所述玻璃基板与所述平坦层之间，且所述发光二极管所发出的光线穿出所述发光面；以及\n\n[0010]多个电性接合元件，设置在所述平坦层上。\n\n[0011]在本发明一实施例中，所述有源矩阵微发光二极管显示面板进一步包括有：\n\n[0012]遮光层，设置在所述玻璃基板上；\n\n[0013]缓冲层，设置在所述遮光层上；\n\n[0014]有源层，设置在所述缓冲层上；\n\n[0015]栅极绝缘层，设置在所述有源层上；\n\n[0016]栅极金属层，设置在所述栅极绝缘层上；\n\n[0017]第一绝缘层，设置在所述缓冲层上并且覆盖所述有源层、所述栅极绝缘层以及所述栅极金属层；\n\n[0018]源极漏极金属层，设置在第一绝缘层上，包括源极、漏极以及公共电极；\n\n[0019]第二绝缘层，设置在所述源极漏极金属层上；\n\n[0020]透明电极层，设置在所述第二绝缘层上；\n\n[0021]金属反射层，设置在所述平坦层上，将所述微发光二极管单元所发出的光线反射穿出所述底面；\n\n[0022]其中，所述微发光二极管单元设置在所述透明电极上；其中，所述平坦层覆盖所述微发光二极管单元、所述透明电极层、所述第二绝缘层；其中，各所述电性接合元件通过一至少贯穿所述平坦层的过孔而电连接到所述栅极金属层、所述源极漏极以及所述公共电极的其中一者。\n\n[0023]在本发明一实施例中，所述微发光二极管单元为覆晶封装结构。\n\n[0024]在本发明一实施例中，所述微发光二极管单元为垂直封装结构。\n\n[0025]在本发明一实施例中，所述微发光二极管单元包括P型半导体电极、N型半导体电极以及介于所述P型半导体电极与所述N型半导体电极之间的电致发光层。\n\n[0026]在本发明一实施例中，所述微发光二极管单元包括设置在所述N型半导体电极上的布拉格反射层，用于将所述微发光二极管单元所发出光线反射穿出所述底面。\n\n[0027]在本发明一实施例中，所述微发光二极管单元的所述P型半导体电极为透明电极，且所述N型半导体电极为非透明电极。\n\n[0028]本发明另一目的在于提供一种有源矩阵微发光二极管显示面板，包括：\n\n[0029]玻璃基板，所述玻璃基板的底面作为发光面，并且作为显示区，其中，所述底面的周缘上不设置作为非显示区的边框；\n\n[0030]遮光层，设置在所述玻璃基板上；\n\n[0031]缓冲层，设置在所述遮光层上；\n\n[0032]有源层，设置在所述缓冲层上；\n\n[0033]栅极绝缘层，设置在所述有源层上；\n\n[0034]栅极金属层，设置在所述栅极绝缘层上；\n\n[0035]第一绝缘层，设置在所述缓冲层上并且覆盖所述有源层、所述栅极绝缘层以及所述栅极金属层；\n\n[0036]源极漏极金属层，设置在第一绝缘层上，包括源极、漏极以及公共电极；\n\n[0037]第二绝缘层，设置在所述源极漏极金属层上；\n\n[0038]透明电极层，设置在所述第二绝缘层上；\n\n[0039]微发光二极管单元，设置在所述透明电极上，且所述发光二极管所发出的光线穿出所述发光面；\n\n[0040]平坦层，与所述玻璃基板相对设置，覆盖所述微发光二极管单元、所述透明电极层、所述第二绝缘层，所述平坦层顶面作为接合面；以及\n\n[0041]多个电性接合元件，设置在所述平坦层上，其中，各所述电性接合元件通过一至少贯穿所述平坦层的过孔而电连接到所述栅极金属层、所述源极漏极以及所述公共电极的其中一者。\n\n[0042]在本发明一实施例中，所述微发光二极管单元为覆晶封装结构。\n\n[0043]在本发明一实施例中，所述微发光二极管单元为垂直封装结构。\n\n[0044]在本发明一实施例中，所述微发光二极管单元包括P型半导体电极、N型半导体电极以及介于所述P型半导体电极与所述N型半导体电极之间的电致发光层。\n\n[0045]在本发明一实施例中，所述微发光二极管单元包括设置在所述N型半导体电极上的布拉格反射层，用于将所述微发光二极管单元所发出光线反射穿出所述底面。\n\n[0046]在本发明一实施例中，所述微发光二极管单元的所述P型半导体电极为透明电极，且所述N型半导体电极为非透明电极。\n\n[0047]与现有技术相比较，本发明通过在所述平坦层开设过孔的方式将薄膜晶体管(Thin Film Transistor,TFT)的栅极、源极及漏极及微发光二极管单元的公共电极设置在显示面板的顶面(平坦层的顶面)，并通过对顶面电极的接合实现把IC晶片接合在显示面板的顶面，使得显示面板的底面周缘不具任何边框，以实现真正的无边框显示。通过采用此无边框显示面板，即可实现无缝拼接。\n\n[0048]为让本发明的上述内容能更明显易懂，下文特举优选实施例，配合所附图式，作详细说明如下：\n\n附图说明\n\n[0049]图1是一现有技术的具边框的显示面板的俯视图。\n\n[0050]图2是本发明有源矩阵微发光二极管(Active Matrix Micro Light EmittingDiode,AM-Micro LED)显示面板的侧面剖视图。\n\n[0051]图3是本发明有源矩阵微发光二极管显示面板的微发光二极管单元的放大侧面剖视图。\n\n[0052]图4是本发明有源矩阵微发光二极管显示面板的顶面视图。\n\n具体实施方式\n\n[0053]请参照图2，本发明有源矩阵微发光二极管(Active Matrix Micro LightEmitting Diode,AM-Micro LED)显示面板的一实施例包括：玻璃基板10、平坦层70、微发光二极管单元ML、以及多个电性接合元件81、82、83。\n\n[0054]所述玻璃基板10的底面100作为发光面，并且作为显示区。所述底面100的周缘上不设置作为非显示区的边框。换言之，使用者从底面100观看所述有源矩阵微发光二极管显示面板时，不会看到边框结构，因此，当多个本发明有源矩阵微发光二极管显示面板拼接成一较大的有源矩阵微发光二极管显示面板组件时，相邻两有源矩阵微发光二极管显示面板的底面100之间不具任何作为非显示区的边框。\n\n[0055]所述平坦层70与所述玻璃基板10相对设置，所述平坦层70顶面700作为接合面。\n\n[0056]如图2所示，所述微发光二极管单元ML设置于所述玻璃基板10与所述平坦层70之间，且所述发光二极管ML所发出的光线穿出所述发光面。\n\n[0057]请参照图2及图4，所述多个电性接合元件81、82、83设置在所述平坦层70上。所述多个电性接合元件81、82、83可分别用于连接具有积体电路(Integrated Circuit,IC)晶片的覆晶薄膜封装(Chip on Film)，例如连接源极COF85以及栅极COF 86。\n\n[0058]在本发明较佳实施例中，所述有源矩阵微发光二极管显示面板进一步包括有：遮光层20、缓冲层30、有源层40、栅极绝缘层GI、栅极金属层GA、第一绝缘层50、源极漏极金属层SD、第二绝缘层60、透明电极层T、以及金属反射层80。\n\n[0059]所述遮光层20设置在所述玻璃基板10上。所述缓冲层30设置在所述遮光层20上。所述有源层40设置在所述缓冲层30上。所述栅极绝缘层GI设置在所述有源层40上。所述栅极金属层GA设置在所述栅极绝缘层GI上。所述第一绝缘层50设置在所述缓冲层30上并且覆盖所述有源层40、所述栅极绝缘层GI以及所述栅极金属层GA。所述源极漏极金属层SD设置在第一绝缘层50上，包括源极、漏极以及公共电极Vcom。所述第二绝缘层60设置在所述源极漏极金属层SD上。所述透明电极层T设置在所述第二绝缘层60上。所述金属反射层80设置在所述平坦层70上，将所述微发光二极管单元ML所发出的光线反射穿出所述底面100。所述微发光二极管单元ML设置在所述透明电极层T上；其中，所述平坦层70覆盖所述微发光二极管单元ML、所述透明电极层T、所述第二绝缘层60；其中，各所述电性接合元件81、82、83通过一至少贯穿所述平坦层70的过孔H而电连接到所述栅极金属层GA、所述源极漏极以及所述公共电极Vcom的其中一者。\n\n[0060]在本发明较佳实施例中，所述微发光二极管单元ML为覆晶封装结构或是垂直封装结构。\n\n[0061]在本发明较佳实施例中，所述微发光二极管单元ML包括P型半导体电极P、N型半导体电极N以及介于所述P型半导体电极P与所述N型半导体电极N之间的电致发光层EL。在本发明较佳实施例中，所述微发光二极管单元ML的所述P型半导体电极P为透明电极，且所述N型半导体电极N为非透明电极。\n\n[0062]在本发明较佳实施例中，所述微发光二极管单元ML包括设置在所述N型半导体电极N上的布拉格反射层(Distributed Bragg reflector)DBR，用于将所述微发光二极管单元ML所发出光线反射穿出所述底面100。\n\n[0063]本发明有源矩阵微发光二极管显示面板的另一实施例包括：玻璃基板10、遮光层20、缓冲层30、有源层40、栅极绝缘层GI、栅极金属层GA、第一绝缘层50、源极漏极金属层SD、第二绝缘层60、透明电极层T、微发光二极管单元ML、平坦层70、以及多个电性接合元件81、82、83。本实施例与上一实施例差别在于本实施例不包括金属反射层。\n\n[0064]所述玻璃基板10的底面100作为发光面，并且作为显示区，其中，所述底面100的周缘上不设置作为非显示区的边框。\n\n[0065]所述遮光层20设置在所述玻璃基板10上。\n\n[0066]所述缓冲层30设置在所述遮光层20上。\n\n[0067]所述有源层40设置在所述缓冲层30上。\n\n[0068]所述栅极绝缘层GI设置在所述有源层40上。\n\n[0069]所述栅极金属层GA设置在所述栅极绝缘层GI上。\n\n[0070]所述第一绝缘层50设置在所述缓冲层30上并且覆盖所述有源层40、所述栅极绝缘层GI以及所述栅极金属层GA。\n\n[0071]所述源极漏极金属层SD设置在第一绝缘层50上，包括源极、漏极以及公共电极Vcom。\n\n[0072]所述第二绝缘层60设置在所述源极漏极金属层SD上。\n\n[0073]所述透明电极层T设置在所述第二绝缘层60上。\n\n[0074]所述微发光二极管单元ML设置在所述透明电极层T上，且所述发光二极管所发出的光线穿出所述发光面。\n\n[0075]所述平坦层70与所述玻璃基板10相对设置，覆盖所述微发光二极管单元ML、所述透明电极层T、所述第二绝缘层60，所述平坦层70顶面700作为接合面。\n\n[0076]所述多个电性接合元件81、82、83设置在所述平坦层70上。各所述电性接合元件81、82、83通过一至少贯穿所述平坦层70的过孔H而电连接到所述栅极金属层GA、所述源极漏极以及所述公共电极Vcom的其中一者。所述多个电性接合元件81、82、83可分别用于连接具有积体电路(Integrated Circuit,IC)晶片的覆晶薄膜封装(Chip on Film)，例如连接源及栅极COF 85以及栅极COF 86。\n\n[0077]此外，本发明有源矩阵微发光二极管显示面板制造方法大致上包括所述玻璃基板10、所述遮光层20、所述缓冲层30、所述有源层40、所述栅极绝缘层GI、所述栅极金属层GA、所述第一绝缘层50、所述源极漏极金属层SD、所述第二绝缘层60、所述透明电极层T、所述微发光二极管单元ML、所述平坦层70、所述多个电性接合元件81、82、83、以及所述金属反射层80依序设置的步骤，但部分步骤可颠倒或同时进行，例如，设置所述多个电性接合元件81、82、83、以及所述金属反射层80的步骤可颠倒或同时进行。\n\n[0078]在本发明较佳实施例中，所述微发光二极管单元ML为覆晶封装结构或是垂直封装结构。\n\n[0079]在本发明较佳实施例中，所述微发光二极管单元ML包括P型半导体电极P、N型半导体电极N以及介于所述P型半导体电极P与所述N型半导体电极N之间的电致发光层EL。在本发明较佳实施例中，所述微发光二极管单元ML的所述P型半导体电极P为透明电极，且所述N型半导体电极N为非透明电极。\n\n[0080]在本发明较佳实施例中，所述微发光二极管单元ML包括设置在所述N型半导体电极N上的布拉格反射层(Distributed Bragg reflector)DBR，用于将所述微发光二极管单元ML所发出光线反射穿出所述底面100。\n\n[0081]与现有技术相比较，本发明通过在所述平坦层70开设过孔H的方式将薄膜晶体管(Thin Film Transistor,TFT)的栅极、源极及漏极及微发光二极管单元ML的公共电极Vcom设置在显示面板的顶面700(平坦层70的顶面700)，并通过对顶面700电极的接合实现把IC晶片接合在显示面板的顶面700，使得显示面板的底面周缘不具任何边框，以实现真正的无边框显示。通过采用此无边框显示面板，即可实现无缝拼接。', '技术领域\n\n[0001]本发明是关于一种有源矩阵微发光二极管(Active Matrix Micro LightEmitting Diode,AM-Micro LED)显示面板，所述显示面板的底面为发光面，且所述显示面板的顶面周缘设置有电性接合(Electrical Bonding)构件以用于接合积体电路(Integrated Circuit,IC)晶片，例如源极驱动IC及栅极驱动IC、电源线、公共电极线等。由于所述显示面板的接合构件集中在顶面，而所述底面为发光面且不具有任何接合构件，因此所述发光面周围无须设置非显示区的边框，进而可通过将多个上述显示面板拼接而得到具有无缝显示的显示面板组件。\n\n背景技术\n\n[0002]请参照图1，现有技术的有源矩阵液晶显示面板(AMLCD)或有源矩阵有机发光二极管(AMOLED)显示面板90在显示区900周围设置有边框91以用于接合(Bonding)驱动积体电路(Integrated Circuit,IC，包括Gate IC或Source IC)，例如栅极薄膜覆晶封装(Chip OnFilm,COF)92和源极COF 93。由于所述边框91四周存在Bonding区域及周边的走线，导致显示面板90的边框具有一定的宽度而形成一非显示区。因此，当需要拼接多个显示面板90组成一个更大的显示面板组件时，相邻的显示面板90间的边框91形成明显的拼接缝而影响整体显示效果。现有技术的液晶显示面板拼接显示技术可将拼接缝限制在略小于2mm，然而，所述约2mm的拼接缝仍有显着影响视觉，降低了显示面板组件的整体视觉效果。\n\n[0003]故，有必要提供一种有源矩阵微发光二极管显示面板，以解决现有技术所存在的问题。\n\n发明内容\n\n[0004]本发明人有鉴于现有技术的多个显示面板拼接后存在有接缝而无法达到无缝显示效果的问题，提供一种有源矩阵微发光二极管(Active Matrix Micro Light EmittingDiode,AM-Micro LED)显示面板。\n\n[0005]本发明的主要目的在于提供一种有源矩阵微发光二极管显示面板，所述显示面板的底面为发光面，且所述显示面板的顶面周缘设置有电性接合(Electrical Bonding)构件以用于接合积体电路(Integrated Circuit,IC)晶片，例如源极驱动IC及栅极驱动IC、电源线、公共电极线等。由于所述显示面板的接合构件集中在顶面，而所述底面为发光面且不具有任何接合构件，因此所述发光面周围无须设置非显示区的边框，因此可通过将多个上述显示面板拼接而得到具有无缝显示的显示面板组件。\n\n[0006]为达上述目的，所述有源矩阵微发光二极管显示面板包括：\n\n[0007]玻璃基板，所述玻璃基板的底面作为发光面，并且作为显示区，其中，所述底面的周缘上不设置作为非显示区的边框；\n\n[0008]平坦层，与所述玻璃基板相对设置，所述平坦层顶面作为接合面；\n\n[0009]微发光二极管单元，设置所述玻璃基板与所述平坦层之间，且所述发光二极管所发出的光线穿出所述发光面；以及\n\n[0010]多个电性接合元件，设置在所述平坦层上。\n\n[0011]在本发明一实施例中，所述有源矩阵微发光二极管显示面板进一步包括有：\n\n[0012]遮光层，设置在所述玻璃基板上；\n\n[0013]缓冲层，设置在所述遮光层上；\n\n[0014]有源层，设置在所述缓冲层上；\n\n[0015]栅极绝缘层，设置在所述有源层上；\n\n[0016]栅极金属层，设置在所述栅极绝缘层上；\n\n[0017]第一绝缘层，设置在所述缓冲层上并且覆盖所述有源层、所述栅极绝缘层以及所述栅极金属层；\n\n[0018]源极漏极金属层，设置在第一绝缘层上，包括源极、漏极以及公共电极；\n\n[0019]第二绝缘层，设置在所述源极漏极金属层上；\n\n[0020]透明电极层，设置在所述第二绝缘层上；\n\n[0021]金属反射层，设置在所述平坦层上，将所述微发光二极管单元所发出的光线反射穿出所述底面；\n\n[0022]其中，所述微发光二极管单元设置在所述透明电极上；其中，所述平坦层覆盖所述微发光二极管单元、所述透明电极层、所述第二绝缘层；其中，各所述电性接合元件通过一至少贯穿所述平坦层的过孔而电连接到所述栅极金属层、所述源极漏极以及所述公共电极的其中一者。\n\n[0023]在本发明一实施例中，所述微发光二极管单元为覆晶封装结构。\n\n[0024]在本发明一实施例中，所述微发光二极管单元为垂直封装结构。\n\n[0025]在本发明一实施例中，所述微发光二极管单元包括P型半导体电极、N型半导体电极以及介于所述P型半导体电极与所述N型半导体电极之间的电致发光层。\n\n[0026]在本发明一实施例中，所述微发光二极管单元包括设置在所述N型半导体电极上的布拉格反射层，用于将所述微发光二极管单元所发出光线反射穿出所述底面。\n\n[0027]在本发明一实施例中，所述微发光二极管单元的所述P型半导体电极为透明电极，且所述N型半导体电极为非透明电极。\n\n[0028]本发明另一目的在于提供一种有源矩阵微发光二极管显示面板，包括：\n\n[0029]玻璃基板，所述玻璃基板的底面作为发光面，并且作为显示区，其中，所述底面的周缘上不设置作为非显示区的边框；\n\n[0030]遮光层，设置在所述玻璃基板上；\n\n[0031]缓冲层，设置在所述遮光层上；\n\n[0032]有源层，设置在所述缓冲层上；\n\n[0033]栅极绝缘层，设置在所述有源层上；\n\n[0034]栅极金属层，设置在所述栅极绝缘层上；\n\n[0035]第一绝缘层，设置在所述缓冲层上并且覆盖所述有源层、所述栅极绝缘层以及所述栅极金属层；\n\n[0036]源极漏极金属层，设置在第一绝缘层上，包括源极、漏极以及公共电极；\n\n[0037]第二绝缘层，设置在所述源极漏极金属层上；\n\n[0038]透明电极层，设置在所述第二绝缘层上；\n\n[0039]微发光二极管单元，设置在所述透明电极上，且所述发光二极管所发出的光线穿出所述发光面；\n\n[0040]平坦层，与所述玻璃基板相对设置，覆盖所述微发光二极管单元、所述透明电极层、所述第二绝缘层，所述平坦层顶面作为接合面；以及\n\n[0041]多个电性接合元件，设置在所述平坦层上，其中，各所述电性接合元件通过一至少贯穿所述平坦层的过孔而电连接到所述栅极金属层、所述源极漏极以及所述公共电极的其中一者。\n\n[0042]在本发明一实施例中，所述微发光二极管单元为覆晶封装结构。\n\n[0043]在本发明一实施例中，所述微发光二极管单元为垂直封装结构。\n\n[0044]在本发明一实施例中，所述微发光二极管单元包括P型半导体电极、N型半导体电极以及介于所述P型半导体电极与所述N型半导体电极之间的电致发光层。\n\n[0045]在本发明一实施例中，所述微发光二极管单元包括设置在所述N型半导体电极上的布拉格反射层，用于将所述微发光二极管单元所发出光线反射穿出所述底面。\n\n[0046]在本发明一实施例中，所述微发光二极管单元的所述P型半导体电极为透明电极，且所述N型半导体电极为非透明电极。\n\n[0047]与现有技术相比较，本发明通过在所述平坦层开设过孔的方式将薄膜晶体管(Thin Film Transistor,TFT)的栅极、源极及漏极及微发光二极管单元的公共电极设置在显示面板的顶面(平坦层的顶面)，并通过对顶面电极的接合实现把IC晶片接合在显示面板的顶面，使得显示面板的底面周缘不具任何边框，以实现真正的无边框显示。通过采用此无边框显示面板，即可实现无缝拼接。\n\n[0048]为让本发明的上述内容能更明显易懂，下文特举优选实施例，配合所附图式，作详细说明如下：\n\n附图说明\n\n[0049]图1是一现有技术的具边框的显示面板的俯视图。\n\n[0050]图2是本发明有源矩阵微发光二极管(Active Matrix Micro Light EmittingDiode,AM-Micro LED)显示面板的侧面剖视图。\n\n[0051]图3是本发明有源矩阵微发光二极管显示面板的微发光二极管单元的放大侧面剖视图。\n\n[0052]图4是本发明有源矩阵微发光二极管显示面板的顶面视图。\n\n具体实施方式\n\n[0053]请参照图2，本发明有源矩阵微发光二极管(Active Matrix Micro LightEmitting Diode,AM-Micro LED)显示面板的一实施例包括：玻璃基板10、平坦层70、微发光二极管单元ML、以及多个电性接合元件81、82、83。\n\n[0054]所述玻璃基板10的底面100作为发光面，并且作为显示区。所述底面100的周缘上不设置作为非显示区的边框。换言之，使用者从底面100观看所述有源矩阵微发光二极管显示面板时，不会看到边框结构，因此，当多个本发明有源矩阵微发光二极管显示面板拼接成一较大的有源矩阵微发光二极管显示面板组件时，相邻两有源矩阵微发光二极管显示面板的底面100之间不具任何作为非显示区的边框。\n\n[0055]所述平坦层70与所述玻璃基板10相对设置，所述平坦层70顶面700作为接合面。\n\n[0056]如图2所示，所述微发光二极管单元ML设置于所述玻璃基板10与所述平坦层70之间，且所述发光二极管ML所发出的光线穿出所述发光面。\n\n[0057]请参照图2及图4，所述多个电性接合元件81、82、83设置在所述平坦层70上。所述多个电性接合元件81、82、83可分别用于连接具有积体电路(Integrated Circuit,IC)晶片的覆晶薄膜封装(Chip on Film)，例如连接源极COF85以及栅极COF 86。\n\n[0058]在本发明较佳实施例中，所述有源矩阵微发光二极管显示面板进一步包括有：遮光层20、缓冲层30、有源层40、栅极绝缘层GI、栅极金属层GA、第一绝缘层50、源极漏极金属层SD、第二绝缘层60、透明电极层T、以及金属反射层80。\n\n[0059]所述遮光层20设置在所述玻璃基板10上。所述缓冲层30设置在所述遮光层20上。所述有源层40设置在所述缓冲层30上。所述栅极绝缘层GI设置在所述有源层40上。所述栅极金属层GA设置在所述栅极绝缘层GI上。所述第一绝缘层50设置在所述缓冲层30上并且覆盖所述有源层40、所述栅极绝缘层GI以及所述栅极金属层GA。所述源极漏极金属层SD设置在第一绝缘层50上，包括源极、漏极以及公共电极Vcom。所述第二绝缘层60设置在所述源极漏极金属层SD上。所述透明电极层T设置在所述第二绝缘层60上。所述金属反射层80设置在所述平坦层70上，将所述微发光二极管单元ML所发出的光线反射穿出所述底面100。所述微发光二极管单元ML设置在所述透明电极层T上；其中，所述平坦层70覆盖所述微发光二极管单元ML、所述透明电极层T、所述第二绝缘层60；其中，各所述电性接合元件81、82、83通过一至少贯穿所述平坦层70的过孔H而电连接到所述栅极金属层GA、所述源极漏极以及所述公共电极Vcom的其中一者。\n\n[0060]在本发明较佳实施例中，所述微发光二极管单元ML为覆晶封装结构或是垂直封装结构。\n\n[0061]在本发明较佳实施例中，所述微发光二极管单元ML包括P型半导体电极P、N型半导体电极N以及介于所述P型半导体电极P与所述N型半导体电极N之间的电致发光层EL。在本发明较佳实施例中，所述微发光二极管单元ML的所述P型半导体电极P为透明电极，且所述N型半导体电极N为非透明电极。\n\n[0062]在本发明较佳实施例中，所述微发光二极管单元ML包括设置在所述N型半导体电极N上的布拉格反射层(Distributed Bragg reflector)DBR，用于将所述微发光二极管单元ML所发出光线反射穿出所述底面100。\n\n[0063]本发明有源矩阵微发光二极管显示面板的另一实施例包括：玻璃基板10、遮光层20、缓冲层30、有源层40、栅极绝缘层GI、栅极金属层GA、第一绝缘层50、源极漏极金属层SD、第二绝缘层60、透明电极层T、微发光二极管单元ML、平坦层70、以及多个电性接合元件81、82、83。本实施例与上一实施例差别在于本实施例不包括金属反射层。\n\n[0064]所述玻璃基板10的底面100作为发光面，并且作为显示区，其中，所述底面100的周缘上不设置作为非显示区的边框。\n\n[0065]所述遮光层20设置在所述玻璃基板10上。\n\n[0066]所述缓冲层30设置在所述遮光层20上。\n\n[0067]所述有源层40设置在所述缓冲层30上。\n\n[0068]所述栅极绝缘层GI设置在所述有源层40上。\n\n[0069]所述栅极金属层GA设置在所述栅极绝缘层GI上。\n\n[0070]所述第一绝缘层50设置在所述缓冲层30上并且覆盖所述有源层40、所述栅极绝缘层GI以及所述栅极金属层GA。\n\n[0071]所述源极漏极金属层SD设置在第一绝缘层50上，包括源极、漏极以及公共电极Vcom。\n\n[0072]所述第二绝缘层60设置在所述源极漏极金属层SD上。\n\n[0073]所述透明电极层T设置在所述第二绝缘层60上。\n\n[0074]所述微发光二极管单元ML设置在所述透明电极层T上，且所述发光二极管所发出的光线穿出所述发光面。\n\n[0075]所述平坦层70与所述玻璃基板10相对设置，覆盖所述微发光二极管单元ML、所述透明电极层T、所述第二绝缘层60，所述平坦层70顶面700作为接合面。\n\n[0076]所述多个电性接合元件81、82、83设置在所述平坦层70上。各所述电性接合元件81、82、83通过一至少贯穿所述平坦层70的过孔H而电连接到所述栅极金属层GA、所述源极漏极以及所述公共电极Vcom的其中一者。所述多个电性接合元件81、82、83可分别用于连接具有积体电路(Integrated Circuit,IC)晶片的覆晶薄膜封装(Chip on Film)，例如连接源及栅极COF 85以及栅极COF 86。\n\n[0077]此外，本发明有源矩阵微发光二极管显示面板制造方法大致上包括所述玻璃基板10、所述遮光层20、所述缓冲层30、所述有源层40、所述栅极绝缘层GI、所述栅极金属层GA、所述第一绝缘层50、所述源极漏极金属层SD、所述第二绝缘层60、所述透明电极层T、所述微发光二极管单元ML、所述平坦层70、所述多个电性接合元件81、82、83、以及所述金属反射层80依序设置的步骤，但部分步骤可颠倒或同时进行，例如，设置所述多个电性接合元件81、82、83、以及所述金属反射层80的步骤可颠倒或同时进行。\n\n[0078]在本发明较佳实施例中，所述微发光二极管单元ML为覆晶封装结构或是垂直封装结构。\n\n[0079]在本发明较佳实施例中，所述微发光二极管单元ML包括P型半导体电极P、N型半导体电极N以及介于所述P型半导体电极P与所述N型半导体电极N之间的电致发光层EL。在本发明较佳实施例中，所述微发光二极管单元ML的所述P型半导体电极P为透明电极，且所述N型半导体电极N为非透明电极。\n\n[0080]在本发明较佳实施例中，所述微发光二极管单元ML包括设置在所述N型半导体电极N上的布拉格反射层(Distributed Bragg reflector)DBR，用于将所述微发光二极管单元ML所发出光线反射穿出所述底面100。\n\n[0081]与现有技术相比较，本发明通过在所述平坦层70开设过孔H的方式将薄膜晶体管(Thin Film Transistor,TFT)的栅极、源极及漏极及微发光二极管单元ML的公共电极Vcom设置在显示面板的顶面700(平坦层70的顶面700)，并通过对顶面700电极的接合实现把IC晶片接合在显示面板的顶面700，使得显示面板的底面周缘不具任何边框，以实现真正的无边框显示。通过采用此无边框显示面板，即可实现无缝拼接。');
INSERT INTO `os_patent_instruction_text` VALUES (10657, 23711, '技术领域\n\n[0001]本揭示涉及显示技术领域，尤其涉及一种MicroLED显示面板。\n\n背景技术\n\n[0002]微型发光二极管(Micro light emitting diode，MicroLED)通常是指在传统MicroLED芯片结构基础上，将MicroLED芯片尺寸规格缩小到200微米以内的尺寸，将红、绿、蓝三色MicroLED按照一定的规则排列在薄膜晶体管(Thin Film Transistor，TFT)或互补金属氧化物半导体(Complementary Metal Oxide Semiconductor，COMS)上，则形成了能够实现全彩显示的微器件。此种显示器具有独立控制的显示画素，具有独立发光控制、高辉度、低耗电、超高分辨率和超高色彩饱和度等特点，并且MicroLED微显示器件由于具有自发光的技术特性，还可以实现柔性、透明显示等，而其耗电量仅约为液晶面板的10％。\n\n[0003]目前，现有的MicroLED彩色化方案主要有两种，一种是采用RGB三色MicroLED芯片,另一种是通过MicroLED芯片和荧光材料结合的彩色化方案。二者各自具有优缺点，其中，由于量子点尺寸小，可实现色域高，因此MicroLED芯片结合量子点荧光材料的方案为当前重要的研究方向。传统的MicroLED芯片结合量子点荧光材料方案采用在MicroLED基板上通过设置black bank(黑色堤)，再在black bank形成的凹槽中放置量子点，但由于blackbank层为有机材料制作而成，厚度越厚，越容易出现底切现象，影响凹槽的形态，且量子点层约薄，量子点的浓度猝灭越严重，将造成光转换效率越低，因此，适当的增加量子点层的厚度，提升光效，又要保持凹槽形态的完整性成为目前需要解决的一个问题。\n\n[0004]因此，需提供一种新的MicroLED显示面板，来解决上述技术问题。\n\n发明内容\n\n[0005]本揭示提供一种MicroLED显示面板，解决了现有的MicroLED显示面板中blackbank层影响凹槽形态结构的完整性，且量子点的浓度猝灭严重、光转换效率低下的技术问题。\n\n[0006]为解决上述问题，本揭示提供的技术方案如下：\n\n[0007]本揭示实施例提供一种MicroLED显示面板，包括：\n\n[0008]第一基板；\n\n[0009]第二基板，与所述第一基板相对；\n\n[0010]驱动电路，设置在所述第二基板上；\n\n[0011]MicroLED芯片，设置于所述第一基板与所述第二基板之间，所述MicroLED芯片包括MicroLED磊晶；以及\n\n[0012]MicroLED量子点发光阵列，包括至少一凹槽、非凹槽区以及填充于所述凹槽内的量子点层或散射颗粒，其中，所述凹槽设置于所述MicroLED磊晶上且呈阵列排列，所述非凹槽区设置于相邻两个所述凹槽之间的所述MicroLED磊晶上，所述量子点层包括红色量子点层及绿色量子点层。\n\n[0013]根据本揭示实施例提供的微型MicroLED显示面板，所述散射颗粒替换为蓝色量子点层。\n\n[0014]根据本揭示实施例提供的MicroLED显示面板，所述MicroLED磊晶包括依次排列分布的蓝宝石基底、n型GaN层、多量子阱发光层和p型GaN层。\n\n[0015]根据本揭示实施例提供的MicroLED显示面板，所述多量子阱发光层为蓝光发光层或紫外发光层。\n\n[0016]根据本揭示实施例提供的MicroLED显示面板，所述蓝宝石基底的厚度大于50um。\n\n[0017]根据本揭示实施例提供的MicroLED显示面板，所述凹槽的深度为3～100um。\n\n[0018]根据本揭示实施例提供的MicroLED显示面板，所述凹槽的侧壁上依次设置有金属反射层及惰性保护层。\n\n[0019]根据本揭示实施例提供的MicroLED显示面板，所述第一基板上设置有至少一黑色矩阵，所述黑色矩阵覆盖所述MicroLED量子点发光阵列的所述非凹槽区。\n\n[0020]根据本揭示实施例提供的MicroLED显示面板，所述第二基板为印刷电路板或薄膜晶体管玻璃基板或互补金属氧化物半导体基板。\n\n[0021]根据本揭示实施例提供的MicroLED显示面板，所述第二基板上设置有第二电极，所述第二电极与设置于所述MicroLED芯片上的芯片电极相连。\n\n[0022]本揭示的有益效果为：本揭示提供的MicroLED显示面板，通过在MicroLED芯片上的蓝宝石基底上设置凹槽，再在凹槽中填充量子点，有效地增加了量子点层的厚度，在提升了光效的同时又可保持放置量子点的凹槽形态结构的完整性和阻水阻氧能力。此外，由于蓝宝石厚度较厚，因此凹槽深度较深、量子点层厚度较厚，可以有效地吸收MicroLED的发光，省去了彩色滤光片层，节省了成本。\n\n附图说明\n\n[0023]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是揭示的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0024]图1为本揭示实施例一提供的一种MicroLED显示面板的结构示意图；\n\n[0025]图2为本揭示实施例二提供的一种MicroLED显示面板的结构示意图。\n\n具体实施方式\n\n[0026]以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。\n\n[0027]本揭示针对现有技术的MicroLED显示面板中的black bank层会影响凹槽形态结构的完整性，且量子点的浓度猝灭严重、光转换效率低下的技术问题。本揭示实施例能够解决该缺陷。本揭示实施例中的MicroLED显示面板为MicroLED显示面板。\n\n[0028]实施例一\n\n[0029]如图1所示，本揭示实施例提供的MicroLED显示面板1000，包括：\n\n[0030]第一基板11；\n\n[0031]第二基板12，与所述第一基板11相对设置；\n\n[0032]MicroLED芯片10，设置于所述第一基板11与所述第二基板12之间，所述MicroLED芯片10包括MicroLED磊晶101；以及\n\n[0033]MicroLED量子点发光阵列100，包括至少一凹槽1011a、非凹槽区1011b以及填充于所述凹槽1011a内的量子点层或散射颗粒19，其中，所述凹槽1011a设置于所述MicroLED磊晶101上且呈阵列排列，所述非凹槽区1011b设置于相邻两个所述凹槽1011a之间的所述MicroLED磊晶101上，所述量子点层包括红色量子点层17及绿色量子点层18。\n\n[0034]所述MicroLED磊晶101包括依次排列分布的蓝宝石基底1011、n型GaN层1012、多量子阱发光层1013、p型GaN层1014以及绝缘层1015。其中，在本揭示实施例中，所述多量子阱发光层1013为蓝光发光层。\n\n[0035]在所述MicroLED磊晶101上的所述蓝宝石基底1011上可设置多个所述凹槽1011a，对于尺寸足够小的所述MicroLED芯片10，在所述MicroLED磊晶101上也可仅设置一个所述凹槽1011a。为实现多种颜色的发光效果，每个所述凹槽1011a中可填充所述量子点层或所述散射颗粒19，填充的所述量子点层的发光波长也可以为相同或不同。其中，相邻三个所述凹槽内分别填充有所述红色量子点层17、所述绿色量子点层18及所述散射颗粒19，所述散射颗粒19为透明的，相邻三个所述凹槽1011a及其设置于所述凹槽1011a内的所述红色量子点层17、所述绿色量子点层18或所述散射颗粒19构成一个RGB像素单元。由于位于所述MicroLED磊晶101上的所述多量子阱发光层1013为蓝光发光层，因此，当所述蓝光发光层发出的蓝光经过所述红色量子点层17时，所述红色量子点层17受到激发而发出红光，形成红色像素；当所述蓝光发光层发出的蓝光经过所述绿色量子点层18时，所述绿色量子点层18受到激发而发出绿光，形成绿色像素；当所述蓝光发光层发出的蓝光经过所述散射颗粒19时，所述透明颗粒19可直接透过所述蓝光发光层发出的蓝光，形成蓝色像素，从而形成红、绿、蓝三基色合成的彩色图像。\n\n[0036]为了有效地利用光能，以及防止所述MicroLED量子点发光阵列100中的像素间颜色的相互干扰，在所述凹槽1011a的侧壁上设置有金属反射层15，所述金属反射层15的材料可为银或铝等金属，光线经过所述金属反射层15进行反射，从而再一次被所述凹槽1011a内的所述量子点层或所述散射颗粒19吸收，防止光线进入相邻的所述凹槽1011a内，造成像素间颜色的相互干扰，进而造成色彩差异。同时，还可在所述金属反射层15上沉积一层惰性保护层(图中未视出)，所述惰性保护层可为聚氨酯、环氧树脂、派瑞林等单层或多层复合膜，以阻隔外界的水氧，用来保护所述金属反射层15，防止所述金属反射层15氧化。\n\n[0037]所述第一基板11可为玻璃基板，在所述第一基板11上设置有至少一个黑色矩阵13，所述黑色矩阵13位于靠近所述MicroLED量子点发光阵列100的一侧且覆盖所述MicroLED量子点发光阵列100的非凹槽区1011b，防止像素间的漏光，可有效地提升暗态下的亮度，从而提升所述MicroLED显示面板1000的对比度。此外，所述第一基板11还可阻挡水、氧进入所述量子点层，可提升所述量子点层可靠性，进而保证所述MicroLED显示面板1000的可靠性。同时，在所述黑色矩阵13下方设置有平坦层14，将所述MicroLED量子点发光阵列100平坦化。\n\n[0038]所述第二基板12与所述第一基板11相对设置，在所述第二基板12上设置有驱动电路。所述第二基板12可为印刷电路板(Printed Circuit Board，PCB)或TFT玻璃基板或CMOS基板。当所述第二基板12为TFT玻璃基板时，所述第二基板12上设置有TFT驱动电路；当所述第二基板12为COMS基板时，所述第二基板12上设置有COMS驱动电路。同时，在所述第二基板12上设置有第二电极，所述第二电极与设置于所述MicroLED芯片上的芯片电极相连，所述第二电极与所述第一电极相匹配。所述第二电极包括第二p电极121与第二n电极122，所述芯片电极包括芯片p电极102与芯片n电极103，所述第二p电极101与所述芯片p电极121相连，所述第二n电极102与所述芯片n电极122相连。\n\n[0039]其中，在所述第二基板12的所述第二电极上设置有连接层16，所述连接层16可为焊材或异方性导电胶(Anisotropic Conductive Film,ACF)。所述焊材需选用具有低熔点的材料，可选用金锡合金、铟、锡化铟等材料。所述第二基板12的所述第二电极与所述MicroLED芯片10的所述芯片电极通过所述焊层或所述ACF进行相连。通过对所述驱动电路的控制，所述多量子阱发光层1013发出蓝光，激发所述红色量子点层17及所述绿色量子点层18，进而分别发出红光和绿光。\n\n[0040]由于所述蓝宝石基底1011的厚度较厚，通常大于50um，因此，在所述蓝宝石基底1011上刻蚀形成的所述凹槽1011a的深度可达到3～100um之间，从而大大提高了所述量子点层的厚度，可以有效的吸收所述蓝色发光层发出的光线。当所述蓝色发光层发出的光线经所述量子点层吸收之后，所残留的蓝光能量足够少([0041]实施例二\n\n[0042]如图2所示，本实施例提供的MicroLED显示面板1000＇，所述MicroLED显示面板1000＇是在实施例一的基础上，将所述蓝色发光层替换为紫外光发光层，同时将所述散射颗粒19替换为蓝色量子点层20，具体地，所述MicroLED显示面板1000＇包括：\n\n[0043]第一基板11；\n\n[0044]第二基板12，与所述第一基板11相对设置；\n\n[0045]MicroLED芯片10，设置于所述第一基板11与所述第二基板12之间，所述MicroLED芯片10包括MicroLED磊晶101；以及\n\n[0046]MicroLED量子点发光阵列200，包括凹槽1011a、非凹槽区1011b以及填充于所述凹槽1011a内的量子点层，其中，所述凹槽1011a设置于所述MicroLED磊晶101上且呈阵列排列，所述非凹槽区1011b设置于相邻两个所述凹槽1011a之间的所述MicroLED磊晶101上，所述量子点层包括红色量子点层17、绿色量子点层18、蓝色量子点层20；。\n\n[0047]所述MicroLED磊晶101包括依次排列分布的蓝宝石基底1011、n型GaN层1012、多量子阱发光层1013、p型GaN层1014以及绝缘层1015。其中，在本揭示实施例中，所述多量子阱发光层1013＇为紫外光发光层。\n\n[0048]在所述MicroLED磊晶101上的所述蓝宝石基底1011上可设置多个所述凹槽1011a，为实现多种颜色的发光效果，每个所述凹槽1011a中可填充量子点层，填充的所述量子点层的发光波长也可以为相同或不同。其中，相邻三个所述凹槽1011a内分别填充有红色量子点层17、绿色量子点层18及蓝色量子点层20，相邻三个所述凹槽1011a及其设置于所述凹槽1011a内的所述量子点层构成一个RGB像素单元。由于位于所述MicroLED磊晶上的所述多量子阱发光层1013＇为紫外光发光层，因此，当所述紫外光发光层发出的紫外光经过所述红色量子点层17时，所述红色量子点层17受到激发而发出红光，形成红色像素；当所述紫外光发光层发出的紫外光经过所述绿色量子点层18时，所述绿色量子点层18受到激发而发出绿光，形成绿色像素；当所述紫外光发光层发出的紫外光经过所述蓝色量子点层20时，所述蓝色量子点层20可直接透过所述紫外光发光层发出的紫外光，形成蓝色像素，从而形成红、绿、蓝三基色合成的彩色图像。\n\n[0049]通过对所述驱动电路的控制，所述多量子阱发光层1013＇发出紫外光，激发所述红色量子点层17、所述绿色量子点层18及所述蓝色量子点层20，进而分别发出红光、绿光及蓝光。\n\n[0050]当所述多量子阱发光层1013＇发出的光线经所述量子点层吸收之后，所残留的紫外光能量足够少([0051]无论是实施例一中的蓝光发光层结合红色量子点层、绿色量子点层及散射颗粒的方案，还是实施例二中紫外光发光层结合红色量子点层、绿色量子点层以及蓝色量子点层的方案，均能实现MicroLED显示面板的彩色化。\n\n[0052]有益效果为：本揭示提供的显示面板，通过在MicroLED芯片上的蓝宝石基底上设置凹槽，再在凹槽中填充量子点，有效地增加了量子点层的厚度，在提升了光效的同时又可保持放置量子点的凹槽形态结构的完整性和阻水阻氧能力。此外，由于蓝宝石厚度较厚，因此凹槽深度较深、量子点层厚度较厚，可以有效地吸收MicroLED的发光，省去了彩色滤光片层，节省了成本。\n\n[0053]综上所述，虽然本揭示已以优选实施例揭露如上，但上述优选实施例并非用以限制本揭示，本领域的普通技术人员，在不脱离本揭示的精神和范围内，均可作各种更动与润饰，因此本揭示的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本揭示涉及显示技术领域，尤其涉及一种MicroLED显示面板。\n\n背景技术\n\n[0002]微型发光二极管(Micro light emitting diode，MicroLED)通常是指在传统MicroLED芯片结构基础上，将MicroLED芯片尺寸规格缩小到200微米以内的尺寸，将红、绿、蓝三色MicroLED按照一定的规则排列在薄膜晶体管(Thin Film Transistor，TFT)或互补金属氧化物半导体(Complementary Metal Oxide Semiconductor，COMS)上，则形成了能够实现全彩显示的微器件。此种显示器具有独立控制的显示画素，具有独立发光控制、高辉度、低耗电、超高分辨率和超高色彩饱和度等特点，并且MicroLED微显示器件由于具有自发光的技术特性，还可以实现柔性、透明显示等，而其耗电量仅约为液晶面板的10％。\n\n[0003]目前，现有的MicroLED彩色化方案主要有两种，一种是采用RGB三色MicroLED芯片,另一种是通过MicroLED芯片和荧光材料结合的彩色化方案。二者各自具有优缺点，其中，由于量子点尺寸小，可实现色域高，因此MicroLED芯片结合量子点荧光材料的方案为当前重要的研究方向。传统的MicroLED芯片结合量子点荧光材料方案采用在MicroLED基板上通过设置black bank(黑色堤)，再在black bank形成的凹槽中放置量子点，但由于blackbank层为有机材料制作而成，厚度越厚，越容易出现底切现象，影响凹槽的形态，且量子点层约薄，量子点的浓度猝灭越严重，将造成光转换效率越低，因此，适当的增加量子点层的厚度，提升光效，又要保持凹槽形态的完整性成为目前需要解决的一个问题。\n\n[0004]因此，需提供一种新的MicroLED显示面板，来解决上述技术问题。\n\n发明内容\n\n[0005]本揭示提供一种MicroLED显示面板，解决了现有的MicroLED显示面板中blackbank层影响凹槽形态结构的完整性，且量子点的浓度猝灭严重、光转换效率低下的技术问题。\n\n[0006]为解决上述问题，本揭示提供的技术方案如下：\n\n[0007]本揭示实施例提供一种MicroLED显示面板，包括：\n\n[0008]第一基板；\n\n[0009]第二基板，与所述第一基板相对；\n\n[0010]驱动电路，设置在所述第二基板上；\n\n[0011]MicroLED芯片，设置于所述第一基板与所述第二基板之间，所述MicroLED芯片包括MicroLED磊晶；以及\n\n[0012]MicroLED量子点发光阵列，包括至少一凹槽、非凹槽区以及填充于所述凹槽内的量子点层或散射颗粒，其中，所述凹槽设置于所述MicroLED磊晶上且呈阵列排列，所述非凹槽区设置于相邻两个所述凹槽之间的所述MicroLED磊晶上，所述量子点层包括红色量子点层及绿色量子点层。\n\n[0013]根据本揭示实施例提供的微型MicroLED显示面板，所述散射颗粒替换为蓝色量子点层。\n\n[0014]根据本揭示实施例提供的MicroLED显示面板，所述MicroLED磊晶包括依次排列分布的蓝宝石基底、n型GaN层、多量子阱发光层和p型GaN层。\n\n[0015]根据本揭示实施例提供的MicroLED显示面板，所述多量子阱发光层为蓝光发光层或紫外发光层。\n\n[0016]根据本揭示实施例提供的MicroLED显示面板，所述蓝宝石基底的厚度大于50um。\n\n[0017]根据本揭示实施例提供的MicroLED显示面板，所述凹槽的深度为3～100um。\n\n[0018]根据本揭示实施例提供的MicroLED显示面板，所述凹槽的侧壁上依次设置有金属反射层及惰性保护层。\n\n[0019]根据本揭示实施例提供的MicroLED显示面板，所述第一基板上设置有至少一黑色矩阵，所述黑色矩阵覆盖所述MicroLED量子点发光阵列的所述非凹槽区。\n\n[0020]根据本揭示实施例提供的MicroLED显示面板，所述第二基板为印刷电路板或薄膜晶体管玻璃基板或互补金属氧化物半导体基板。\n\n[0021]根据本揭示实施例提供的MicroLED显示面板，所述第二基板上设置有第二电极，所述第二电极与设置于所述MicroLED芯片上的芯片电极相连。\n\n[0022]本揭示的有益效果为：本揭示提供的MicroLED显示面板，通过在MicroLED芯片上的蓝宝石基底上设置凹槽，再在凹槽中填充量子点，有效地增加了量子点层的厚度，在提升了光效的同时又可保持放置量子点的凹槽形态结构的完整性和阻水阻氧能力。此外，由于蓝宝石厚度较厚，因此凹槽深度较深、量子点层厚度较厚，可以有效地吸收MicroLED的发光，省去了彩色滤光片层，节省了成本。\n\n附图说明\n\n[0023]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是揭示的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0024]图1为本揭示实施例一提供的一种MicroLED显示面板的结构示意图；\n\n[0025]图2为本揭示实施例二提供的一种MicroLED显示面板的结构示意图。\n\n具体实施方式\n\n[0026]以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。\n\n[0027]本揭示针对现有技术的MicroLED显示面板中的black bank层会影响凹槽形态结构的完整性，且量子点的浓度猝灭严重、光转换效率低下的技术问题。本揭示实施例能够解决该缺陷。本揭示实施例中的MicroLED显示面板为MicroLED显示面板。\n\n[0028]实施例一\n\n[0029]如图1所示，本揭示实施例提供的MicroLED显示面板1000，包括：\n\n[0030]第一基板11；\n\n[0031]第二基板12，与所述第一基板11相对设置；\n\n[0032]MicroLED芯片10，设置于所述第一基板11与所述第二基板12之间，所述MicroLED芯片10包括MicroLED磊晶101；以及\n\n[0033]MicroLED量子点发光阵列100，包括至少一凹槽1011a、非凹槽区1011b以及填充于所述凹槽1011a内的量子点层或散射颗粒19，其中，所述凹槽1011a设置于所述MicroLED磊晶101上且呈阵列排列，所述非凹槽区1011b设置于相邻两个所述凹槽1011a之间的所述MicroLED磊晶101上，所述量子点层包括红色量子点层17及绿色量子点层18。\n\n[0034]所述MicroLED磊晶101包括依次排列分布的蓝宝石基底1011、n型GaN层1012、多量子阱发光层1013、p型GaN层1014以及绝缘层1015。其中，在本揭示实施例中，所述多量子阱发光层1013为蓝光发光层。\n\n[0035]在所述MicroLED磊晶101上的所述蓝宝石基底1011上可设置多个所述凹槽1011a，对于尺寸足够小的所述MicroLED芯片10，在所述MicroLED磊晶101上也可仅设置一个所述凹槽1011a。为实现多种颜色的发光效果，每个所述凹槽1011a中可填充所述量子点层或所述散射颗粒19，填充的所述量子点层的发光波长也可以为相同或不同。其中，相邻三个所述凹槽内分别填充有所述红色量子点层17、所述绿色量子点层18及所述散射颗粒19，所述散射颗粒19为透明的，相邻三个所述凹槽1011a及其设置于所述凹槽1011a内的所述红色量子点层17、所述绿色量子点层18或所述散射颗粒19构成一个RGB像素单元。由于位于所述MicroLED磊晶101上的所述多量子阱发光层1013为蓝光发光层，因此，当所述蓝光发光层发出的蓝光经过所述红色量子点层17时，所述红色量子点层17受到激发而发出红光，形成红色像素；当所述蓝光发光层发出的蓝光经过所述绿色量子点层18时，所述绿色量子点层18受到激发而发出绿光，形成绿色像素；当所述蓝光发光层发出的蓝光经过所述散射颗粒19时，所述透明颗粒19可直接透过所述蓝光发光层发出的蓝光，形成蓝色像素，从而形成红、绿、蓝三基色合成的彩色图像。\n\n[0036]为了有效地利用光能，以及防止所述MicroLED量子点发光阵列100中的像素间颜色的相互干扰，在所述凹槽1011a的侧壁上设置有金属反射层15，所述金属反射层15的材料可为银或铝等金属，光线经过所述金属反射层15进行反射，从而再一次被所述凹槽1011a内的所述量子点层或所述散射颗粒19吸收，防止光线进入相邻的所述凹槽1011a内，造成像素间颜色的相互干扰，进而造成色彩差异。同时，还可在所述金属反射层15上沉积一层惰性保护层(图中未视出)，所述惰性保护层可为聚氨酯、环氧树脂、派瑞林等单层或多层复合膜，以阻隔外界的水氧，用来保护所述金属反射层15，防止所述金属反射层15氧化。\n\n[0037]所述第一基板11可为玻璃基板，在所述第一基板11上设置有至少一个黑色矩阵13，所述黑色矩阵13位于靠近所述MicroLED量子点发光阵列100的一侧且覆盖所述MicroLED量子点发光阵列100的非凹槽区1011b，防止像素间的漏光，可有效地提升暗态下的亮度，从而提升所述MicroLED显示面板1000的对比度。此外，所述第一基板11还可阻挡水、氧进入所述量子点层，可提升所述量子点层可靠性，进而保证所述MicroLED显示面板1000的可靠性。同时，在所述黑色矩阵13下方设置有平坦层14，将所述MicroLED量子点发光阵列100平坦化。\n\n[0038]所述第二基板12与所述第一基板11相对设置，在所述第二基板12上设置有驱动电路。所述第二基板12可为印刷电路板(Printed Circuit Board，PCB)或TFT玻璃基板或CMOS基板。当所述第二基板12为TFT玻璃基板时，所述第二基板12上设置有TFT驱动电路；当所述第二基板12为COMS基板时，所述第二基板12上设置有COMS驱动电路。同时，在所述第二基板12上设置有第二电极，所述第二电极与设置于所述MicroLED芯片上的芯片电极相连，所述第二电极与所述第一电极相匹配。所述第二电极包括第二p电极121与第二n电极122，所述芯片电极包括芯片p电极102与芯片n电极103，所述第二p电极101与所述芯片p电极121相连，所述第二n电极102与所述芯片n电极122相连。\n\n[0039]其中，在所述第二基板12的所述第二电极上设置有连接层16，所述连接层16可为焊材或异方性导电胶(Anisotropic Conductive Film,ACF)。所述焊材需选用具有低熔点的材料，可选用金锡合金、铟、锡化铟等材料。所述第二基板12的所述第二电极与所述MicroLED芯片10的所述芯片电极通过所述焊层或所述ACF进行相连。通过对所述驱动电路的控制，所述多量子阱发光层1013发出蓝光，激发所述红色量子点层17及所述绿色量子点层18，进而分别发出红光和绿光。\n\n[0040]由于所述蓝宝石基底1011的厚度较厚，通常大于50um，因此，在所述蓝宝石基底1011上刻蚀形成的所述凹槽1011a的深度可达到3～100um之间，从而大大提高了所述量子点层的厚度，可以有效的吸收所述蓝色发光层发出的光线。当所述蓝色发光层发出的光线经所述量子点层吸收之后，所残留的蓝光能量足够少([0041]实施例二\n\n[0042]如图2所示，本实施例提供的MicroLED显示面板1000＇，所述MicroLED显示面板1000＇是在实施例一的基础上，将所述蓝色发光层替换为紫外光发光层，同时将所述散射颗粒19替换为蓝色量子点层20，具体地，所述MicroLED显示面板1000＇包括：\n\n[0043]第一基板11；\n\n[0044]第二基板12，与所述第一基板11相对设置；\n\n[0045]MicroLED芯片10，设置于所述第一基板11与所述第二基板12之间，所述MicroLED芯片10包括MicroLED磊晶101；以及\n\n[0046]MicroLED量子点发光阵列200，包括凹槽1011a、非凹槽区1011b以及填充于所述凹槽1011a内的量子点层，其中，所述凹槽1011a设置于所述MicroLED磊晶101上且呈阵列排列，所述非凹槽区1011b设置于相邻两个所述凹槽1011a之间的所述MicroLED磊晶101上，所述量子点层包括红色量子点层17、绿色量子点层18、蓝色量子点层20；。\n\n[0047]所述MicroLED磊晶101包括依次排列分布的蓝宝石基底1011、n型GaN层1012、多量子阱发光层1013、p型GaN层1014以及绝缘层1015。其中，在本揭示实施例中，所述多量子阱发光层1013＇为紫外光发光层。\n\n[0048]在所述MicroLED磊晶101上的所述蓝宝石基底1011上可设置多个所述凹槽1011a，为实现多种颜色的发光效果，每个所述凹槽1011a中可填充量子点层，填充的所述量子点层的发光波长也可以为相同或不同。其中，相邻三个所述凹槽1011a内分别填充有红色量子点层17、绿色量子点层18及蓝色量子点层20，相邻三个所述凹槽1011a及其设置于所述凹槽1011a内的所述量子点层构成一个RGB像素单元。由于位于所述MicroLED磊晶上的所述多量子阱发光层1013＇为紫外光发光层，因此，当所述紫外光发光层发出的紫外光经过所述红色量子点层17时，所述红色量子点层17受到激发而发出红光，形成红色像素；当所述紫外光发光层发出的紫外光经过所述绿色量子点层18时，所述绿色量子点层18受到激发而发出绿光，形成绿色像素；当所述紫外光发光层发出的紫外光经过所述蓝色量子点层20时，所述蓝色量子点层20可直接透过所述紫外光发光层发出的紫外光，形成蓝色像素，从而形成红、绿、蓝三基色合成的彩色图像。\n\n[0049]通过对所述驱动电路的控制，所述多量子阱发光层1013＇发出紫外光，激发所述红色量子点层17、所述绿色量子点层18及所述蓝色量子点层20，进而分别发出红光、绿光及蓝光。\n\n[0050]当所述多量子阱发光层1013＇发出的光线经所述量子点层吸收之后，所残留的紫外光能量足够少([0051]无论是实施例一中的蓝光发光层结合红色量子点层、绿色量子点层及散射颗粒的方案，还是实施例二中紫外光发光层结合红色量子点层、绿色量子点层以及蓝色量子点层的方案，均能实现MicroLED显示面板的彩色化。\n\n[0052]有益效果为：本揭示提供的显示面板，通过在MicroLED芯片上的蓝宝石基底上设置凹槽，再在凹槽中填充量子点，有效地增加了量子点层的厚度，在提升了光效的同时又可保持放置量子点的凹槽形态结构的完整性和阻水阻氧能力。此外，由于蓝宝石厚度较厚，因此凹槽深度较深、量子点层厚度较厚，可以有效地吸收MicroLED的发光，省去了彩色滤光片层，节省了成本。\n\n[0053]综上所述，虽然本揭示已以优选实施例揭露如上，但上述优选实施例并非用以限制本揭示，本领域的普通技术人员，在不脱离本揭示的精神和范围内，均可作各种更动与润饰，因此本揭示的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10658, 23712, '技术领域\n\n[0001]本发明涉及显示领域，尤其是涉及一种显示面板及显示装置。\n\n背景技术\n\n[0002]随着智能手机的更新换代，高屏占比手机的市场占率越来越高。为了提高手机的屏占比，手机厂商会尽量把传感器设计到屏幕下。目前，屏下指纹识别技术已经实现商用，屏幕发声，屏下虹膜识别技术也越来越成熟，这促进了手机的屏占比进一步提高。但前置摄像头对成像质量要求较高，而屏下摄像头成像质量不佳，使得屏下摄像头的实现难度较大。为了实现屏下摄像头，有许多设计方法。\n\n[0003]一般来说是降低前置摄像头区域上方屏幕的像素密度，屏下摄像头区域有部分区域无金属走线，可以透过光线，用于前置摄像头拍照使用。由于屏下摄像头区域像素密度较低，发光面积小，这会导致屏下摄像头区域亮度较低。但若提高屏下摄像头区域的亮度，将导致屏下摄像头区域OLED的寿命变短，长时间使用会导致屏下摄像头区域亮度异常，出现不良。\n\n[0004]因此，有必要提出一种新的显示面板及显示装置，提高屏下摄像头区域的亮度，解决了现有技术中显示面板寿命变短、摄像头区域亮度异常的问题。\n\n发明内容\n\n[0005]本发明的目的在于，提供一种显示面板及显示装置，通过在显示面板的透光显示区设置Micro LED作为透光显示区的显示单元，可以提高透光显示区的亮度，可以解决了现有技术中显示面板寿命变短、摄像头区域亮度异常的问题。\n\n[0006]本发明提供一种显示面板，其特征在于，包括透光显示区以及主显示区，所述主显示区围绕所述透光显示区，所述显示面板包括：基板；在所述主显示区的基板上，依次设置有：第一电极，设于所述基板上；空穴注入层，设于所述第一电极远离基板的一侧；空穴传输层，设于所述空穴注入层远离所述第一电极的一侧；第一发光层，设于所述空穴传输层远离所述空穴注入层的一侧；电子传输层，设于所述第一发光层远离所述空穴传输层的一侧；第二电极，设于所述电子传输层远离所述发光层的一侧；以及第一封装层，设于所述第二电极的远离所述电子传输层的一侧；其中，所述透光显示区设有一透光孔，所述透光孔位于所述基板上方，并由所述主显示区围绕。\n\n[0007]进一步地，所述透光显示区包括：第三电极，设于所述基板上；第二发光层，设于所述第三电极远离所述基板的一侧；第四电极，设于所述第二发光层远离所述第三电极的一侧；第二封装层，设于所述第四电极远离所述第二发光层的一侧。\n\n[0008]进一步地，所述第三电极为阴极，所述第四电极为阳极。\n\n[0009]进一步地，所述第一发光层中具有至少一第一发光单元；所述第二发光层中具有至少一第二发光单元；所述第二发光单元的材料为无机半导体，所述无机半导体为氮化镓或氮化镓砷发光材料。\n\n[0010]进一步地，所述第一发光单元为红色发光单元、绿色发光单元或蓝色发光单元的任意一种；所述第二发光单元为红色发光单元、绿色发光单元或蓝色发光单元的任意一种。\n\n[0011]进一步地，在所述主显示区，所述第一发光层具有多个阵列式分布的第一发光单元；所述第一发光单元包括红色发光单元、绿色发光单元和蓝色发光单元。\n\n[0012]进一步地，在所述透光显示区，所述第二发光层具有多个阵列式分布的第二发光单元；所述第二发光单元包括红色发光单元、绿色发光单元和蓝色发光单元。\n\n[0013]进一步地，所述第二发光单元的密度比所述第一发光单元的密度稀疏。\n\n[0014]进一步地，所述第一电极为阳极，所述第二电极为阴极。\n\n[0015]本发明还提供一种显示装置，包括所述的显示面板以及摄像模块，所述摄像模块设于所述显示面板下方且对应所述透光显示区。\n\n[0016]本发明的有益效果是：本发明提供一显示面板以及显示装置，通过在显示面板的透光显示区设置Micro LED作为透光显示区的显示单元，可以提高透光显示区的亮度，可以解决了现有技术中显示面板寿命变短、摄像头区域亮度异常的问题。并且本发明由于MicroLED为无机材料，其发光效率高，且寿命长，因而即使所述透光显示区的第二发光单元亮度比所述主显示区的第一发光单元的亮度更高，也不会发生明显衰减。另外，由于所述透光显示区的第二发光单元的密度低，整个子像素数量少，因而，对Micro LED转移良率要求不会太苛刻。\n\n附图说明\n\n[0017]下面结合附图和实施例对本发明作进一步的描述。\n\n[0018]图1为本发明显示面板的平面示意图；\n\n[0019]图2为本发明显示面板的结构示意图；\n\n[0020]图3为本发明显示面板第二发光单元的平面图；\n\n[0021]图4为本发明显示装置的结构示意图；\n\n[0022]显示面板100；显示装置200；\n\n[0023]主显示区110；透光显示区120；\n\n[0024]基板101；第一电极102；空穴注入层103；\n\n[0025]空穴传输层104；第一发光层105；电子传输层106；\n\n[0026]第二电极107；第一封装层108；透光孔109；\n\n[0027]第三电极111；第二发光层112；第四电极113；\n\n[0028]第二封装层114；摄像模块201；第一发光单元1051；\n\n[0029]第二发光单元1121。\n\n具体实施方式\n\n[0030]以下是各实施例的说明是参考附加的图式，用以例示本发明可以用实施的特定实施例。本发明所提到的方向用语，例如上、下、前、后、左、右、内、外、侧等，仅是参考附图式的方向。本发明提到的元件名称，例如第一、第二等，仅是区分不同的元部件，可以更好的表达。在图中，结构相似的单元以相同标号表示。\n\n[0031]本文将参照附图来详细描述本发明的实施例。本发明可以表现为许多不同形式，本发明不应仅被解释为本文阐述的具体实施例。本发明提供这些实施例是为了解释本发明的实际应用，从而使本领域其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改方案。\n\n[0032]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。\n\n[0033]如图1所示，在本实施例中，本发明提供的一种显示面板100，包括透光显示区120以及主显示区110，所述主显示区110围绕所述透光显示区120，所述透光显示区120与所述主显示区110都可以用于所述显示面板100的显示画面，实现真正的全面屏。\n\n[0034]如图2所示，所述显示面板100包括基板101。\n\n[0035]请继续参照图2所示，在所述主显示区110，所述显示面板100还包括有依次设置于所述基板101上的第一电极102、空穴注入层103、空穴传输层104、第一发光层105、电子传输层106、第二电极107以及第一封装层108。\n\n[0036]所述基板101为柔性基板，所述基板101的材料为聚酰亚胺，所述聚酰亚胺材料可以使本发明的基板101具有柔性特性。\n\n[0037]所述第一电极102设于所述基板101上；所述第一电极102为阳极，所述第一电极102的材料为透明的ITO。\n\n[0038]所述空穴注入层103设于所述第一电极102远离基板101的一侧；所述空穴传输层104设于所述空穴注入层103远离所述第一电极102的一侧；\n\n[0039]所述第一发光层105设于所述空穴传输层104远离所述空穴注入层103的一侧；所述第一发光层105具有至少第一发光单元1051。所述第一发光单元1051为红色发光单元、绿色发光单元或蓝色发光单元的任意一种。\n\n[0040]在本实施例中，所述第一发光层105中具有多个阵列式分布的第一发光单元1051。所述第一发光单元1051包括红色发光单元、绿色发光单元和蓝色发光单元。所述第一发光单元1051为传统的OLED发光单元。\n\n[0041]所述电子传输层106设于所述发光层远离所述空穴传输层104的一侧。\n\n[0042]所述第二电极107设于所述电子传输层106远离所述发光层的一侧；所述第二电极107为阴极。\n\n[0043]所述第一封装层108设于所述第二电极107的远离所述电子传输层106的一侧；所述第一封装层108用以保护所述显示面板100，可以延长所述显示面板100的使用寿命。\n\n[0044]请继续参照图2所示，在所述透光显示区120，所述显示面板100还包括一透光孔109，所述透光孔109位于所述基板101上方，并由所述主显示区110围绕。更具体地讲，所述透光孔109穿过所述第一电极102、所述空穴注入层103、所述空穴传输层104、所述第一发光层105、所述电子传输层106、所述第二电极107和所述第一封装层108，直至所述基板101。所述透光显示区120用于外界光线透过显示面板100，可以被摄像模块201采集。\n\n[0045]在所述透光孔109中设有第三电极111、第二发光层112、第四电极113以及第二封装层114。\n\n[0046]具体地讲，所述第三电极111设于所述基板101上；所述第三电极111为阴极，与所述第二电极107的材料相同。\n\n[0047]所述第二发光层112设于所述第三电极111远离所述基板101的一侧；所述第二发光层112中具有至少一第二发光单元1121。在本实施例中，所述第二发光单元1121为MicroLED。所述第二发光单元1121的材料为无机半导体，所述无机半导体为氮化镓或氮化镓砷发光材料。\n\n[0048]如图3所示，所述第二发光单元1121为红色发光单元1121a、绿色发光1121b单元或蓝色发光单元1121c的任意一种。\n\n[0049]在本实施例中，所述第二发光层112中具有多个阵列式分布的第二发光单元1121。并且所述第二发光单元1121排列方式呈红色发光单元1121a、绿色发光1121b单元和蓝色发光单元1121c连续交替排列。\n\n[0050]所述第二发光单元1121的密度比所述第一发光单元1051的密度稀疏。\n\n[0051]所述第四电极113设于所述第二发光层112远离所述第三电极111的一侧；所述第四电极113为阳极，所述第四电极113与所述第一电极102材料相同。\n\n[0052]所述第二封装层114设于所述第四电极113远离所述第二发光层112的一侧，所述第二封装层114用于保护所述透光显示区120，阻隔水氧。同时也可以封装所述透光显示区120，进一步保护所述主显示区110的OLED器件结构。\n\n[0053]本发明由于Micro LED为无机材料，其发光效率高，且寿命长，因而即使所述透光显示区120的第二发光单元1121亮度比所述主显示区110的第一发光单元的亮度更高，也不会发生明显衰减。\n\n[0054]另外，由于所述透光显示区120的第二发光单元1121的密度低，整个子像素数量少，因而，对Micro LED转移良率要求不会太苛刻。\n\n[0055]如图4所示，本发明还提供一种显示装置200，包括所述显示面板100以及摄像模块201，所述摄像模块201设于所述显示面板100下方且对应所述透光显示区120。\n\n[0056]本发明显示面板及显示装置通过在显示面板的透光显示区设置Micro LED作为透光显示区的显示单元，可以提高透光显示区的亮度，可以解决了现有技术中显示面板寿命变短、摄像头区域亮度异常的问题。并且本发明由于Micro LED为无机材料，其发光效率高，且寿命长，因而即使所述透光显示区的第二发光单元亮度比所述主显示区的第一发光单元的亮度更高，也不会发生明显衰减。另外，由于所述透光显示区的第二发光单元的密度低，整个子像素数量少，因而，对Micro LED转移良率要求不会太苛刻。\n\n[0057]应当指出，对于经充分说明的本发明来说，还可具有多种变换及改型的实施方案，并不局限于上述实施方式的具体实施例。上述实施例仅仅作为本发明的说明，而不是对发明的限制。总之，本发明的保护范围应包括那些对于本领域普通技术人员来说显而易见的变换或替代以及改型。', '技术领域\n\n[0001]本发明涉及显示领域，尤其是涉及一种显示面板及显示装置。\n\n背景技术\n\n[0002]随着智能手机的更新换代，高屏占比手机的市场占率越来越高。为了提高手机的屏占比，手机厂商会尽量把传感器设计到屏幕下。目前，屏下指纹识别技术已经实现商用，屏幕发声，屏下虹膜识别技术也越来越成熟，这促进了手机的屏占比进一步提高。但前置摄像头对成像质量要求较高，而屏下摄像头成像质量不佳，使得屏下摄像头的实现难度较大。为了实现屏下摄像头，有许多设计方法。\n\n[0003]一般来说是降低前置摄像头区域上方屏幕的像素密度，屏下摄像头区域有部分区域无金属走线，可以透过光线，用于前置摄像头拍照使用。由于屏下摄像头区域像素密度较低，发光面积小，这会导致屏下摄像头区域亮度较低。但若提高屏下摄像头区域的亮度，将导致屏下摄像头区域OLED的寿命变短，长时间使用会导致屏下摄像头区域亮度异常，出现不良。\n\n[0004]因此，有必要提出一种新的显示面板及显示装置，提高屏下摄像头区域的亮度，解决了现有技术中显示面板寿命变短、摄像头区域亮度异常的问题。\n\n发明内容\n\n[0005]本发明的目的在于，提供一种显示面板及显示装置，通过在显示面板的透光显示区设置Micro LED作为透光显示区的显示单元，可以提高透光显示区的亮度，可以解决了现有技术中显示面板寿命变短、摄像头区域亮度异常的问题。\n\n[0006]本发明提供一种显示面板，其特征在于，包括透光显示区以及主显示区，所述主显示区围绕所述透光显示区，所述显示面板包括：基板；在所述主显示区的基板上，依次设置有：第一电极，设于所述基板上；空穴注入层，设于所述第一电极远离基板的一侧；空穴传输层，设于所述空穴注入层远离所述第一电极的一侧；第一发光层，设于所述空穴传输层远离所述空穴注入层的一侧；电子传输层，设于所述第一发光层远离所述空穴传输层的一侧；第二电极，设于所述电子传输层远离所述发光层的一侧；以及第一封装层，设于所述第二电极的远离所述电子传输层的一侧；其中，所述透光显示区设有一透光孔，所述透光孔位于所述基板上方，并由所述主显示区围绕。\n\n[0007]进一步地，所述透光显示区包括：第三电极，设于所述基板上；第二发光层，设于所述第三电极远离所述基板的一侧；第四电极，设于所述第二发光层远离所述第三电极的一侧；第二封装层，设于所述第四电极远离所述第二发光层的一侧。\n\n[0008]进一步地，所述第三电极为阴极，所述第四电极为阳极。\n\n[0009]进一步地，所述第一发光层中具有至少一第一发光单元；所述第二发光层中具有至少一第二发光单元；所述第二发光单元的材料为无机半导体，所述无机半导体为氮化镓或氮化镓砷发光材料。\n\n[0010]进一步地，所述第一发光单元为红色发光单元、绿色发光单元或蓝色发光单元的任意一种；所述第二发光单元为红色发光单元、绿色发光单元或蓝色发光单元的任意一种。\n\n[0011]进一步地，在所述主显示区，所述第一发光层具有多个阵列式分布的第一发光单元；所述第一发光单元包括红色发光单元、绿色发光单元和蓝色发光单元。\n\n[0012]进一步地，在所述透光显示区，所述第二发光层具有多个阵列式分布的第二发光单元；所述第二发光单元包括红色发光单元、绿色发光单元和蓝色发光单元。\n\n[0013]进一步地，所述第二发光单元的密度比所述第一发光单元的密度稀疏。\n\n[0014]进一步地，所述第一电极为阳极，所述第二电极为阴极。\n\n[0015]本发明还提供一种显示装置，包括所述的显示面板以及摄像模块，所述摄像模块设于所述显示面板下方且对应所述透光显示区。\n\n[0016]本发明的有益效果是：本发明提供一显示面板以及显示装置，通过在显示面板的透光显示区设置Micro LED作为透光显示区的显示单元，可以提高透光显示区的亮度，可以解决了现有技术中显示面板寿命变短、摄像头区域亮度异常的问题。并且本发明由于MicroLED为无机材料，其发光效率高，且寿命长，因而即使所述透光显示区的第二发光单元亮度比所述主显示区的第一发光单元的亮度更高，也不会发生明显衰减。另外，由于所述透光显示区的第二发光单元的密度低，整个子像素数量少，因而，对Micro LED转移良率要求不会太苛刻。\n\n附图说明\n\n[0017]下面结合附图和实施例对本发明作进一步的描述。\n\n[0018]图1为本发明显示面板的平面示意图；\n\n[0019]图2为本发明显示面板的结构示意图；\n\n[0020]图3为本发明显示面板第二发光单元的平面图；\n\n[0021]图4为本发明显示装置的结构示意图；\n\n[0022]显示面板100；显示装置200；\n\n[0023]主显示区110；透光显示区120；\n\n[0024]基板101；第一电极102；空穴注入层103；\n\n[0025]空穴传输层104；第一发光层105；电子传输层106；\n\n[0026]第二电极107；第一封装层108；透光孔109；\n\n[0027]第三电极111；第二发光层112；第四电极113；\n\n[0028]第二封装层114；摄像模块201；第一发光单元1051；\n\n[0029]第二发光单元1121。\n\n具体实施方式\n\n[0030]以下是各实施例的说明是参考附加的图式，用以例示本发明可以用实施的特定实施例。本发明所提到的方向用语，例如上、下、前、后、左、右、内、外、侧等，仅是参考附图式的方向。本发明提到的元件名称，例如第一、第二等，仅是区分不同的元部件，可以更好的表达。在图中，结构相似的单元以相同标号表示。\n\n[0031]本文将参照附图来详细描述本发明的实施例。本发明可以表现为许多不同形式，本发明不应仅被解释为本文阐述的具体实施例。本发明提供这些实施例是为了解释本发明的实际应用，从而使本领域其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改方案。\n\n[0032]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。\n\n[0033]如图1所示，在本实施例中，本发明提供的一种显示面板100，包括透光显示区120以及主显示区110，所述主显示区110围绕所述透光显示区120，所述透光显示区120与所述主显示区110都可以用于所述显示面板100的显示画面，实现真正的全面屏。\n\n[0034]如图2所示，所述显示面板100包括基板101。\n\n[0035]请继续参照图2所示，在所述主显示区110，所述显示面板100还包括有依次设置于所述基板101上的第一电极102、空穴注入层103、空穴传输层104、第一发光层105、电子传输层106、第二电极107以及第一封装层108。\n\n[0036]所述基板101为柔性基板，所述基板101的材料为聚酰亚胺，所述聚酰亚胺材料可以使本发明的基板101具有柔性特性。\n\n[0037]所述第一电极102设于所述基板101上；所述第一电极102为阳极，所述第一电极102的材料为透明的ITO。\n\n[0038]所述空穴注入层103设于所述第一电极102远离基板101的一侧；所述空穴传输层104设于所述空穴注入层103远离所述第一电极102的一侧；\n\n[0039]所述第一发光层105设于所述空穴传输层104远离所述空穴注入层103的一侧；所述第一发光层105具有至少第一发光单元1051。所述第一发光单元1051为红色发光单元、绿色发光单元或蓝色发光单元的任意一种。\n\n[0040]在本实施例中，所述第一发光层105中具有多个阵列式分布的第一发光单元1051。所述第一发光单元1051包括红色发光单元、绿色发光单元和蓝色发光单元。所述第一发光单元1051为传统的OLED发光单元。\n\n[0041]所述电子传输层106设于所述发光层远离所述空穴传输层104的一侧。\n\n[0042]所述第二电极107设于所述电子传输层106远离所述发光层的一侧；所述第二电极107为阴极。\n\n[0043]所述第一封装层108设于所述第二电极107的远离所述电子传输层106的一侧；所述第一封装层108用以保护所述显示面板100，可以延长所述显示面板100的使用寿命。\n\n[0044]请继续参照图2所示，在所述透光显示区120，所述显示面板100还包括一透光孔109，所述透光孔109位于所述基板101上方，并由所述主显示区110围绕。更具体地讲，所述透光孔109穿过所述第一电极102、所述空穴注入层103、所述空穴传输层104、所述第一发光层105、所述电子传输层106、所述第二电极107和所述第一封装层108，直至所述基板101。所述透光显示区120用于外界光线透过显示面板100，可以被摄像模块201采集。\n\n[0045]在所述透光孔109中设有第三电极111、第二发光层112、第四电极113以及第二封装层114。\n\n[0046]具体地讲，所述第三电极111设于所述基板101上；所述第三电极111为阴极，与所述第二电极107的材料相同。\n\n[0047]所述第二发光层112设于所述第三电极111远离所述基板101的一侧；所述第二发光层112中具有至少一第二发光单元1121。在本实施例中，所述第二发光单元1121为MicroLED。所述第二发光单元1121的材料为无机半导体，所述无机半导体为氮化镓或氮化镓砷发光材料。\n\n[0048]如图3所示，所述第二发光单元1121为红色发光单元1121a、绿色发光1121b单元或蓝色发光单元1121c的任意一种。\n\n[0049]在本实施例中，所述第二发光层112中具有多个阵列式分布的第二发光单元1121。并且所述第二发光单元1121排列方式呈红色发光单元1121a、绿色发光1121b单元和蓝色发光单元1121c连续交替排列。\n\n[0050]所述第二发光单元1121的密度比所述第一发光单元1051的密度稀疏。\n\n[0051]所述第四电极113设于所述第二发光层112远离所述第三电极111的一侧；所述第四电极113为阳极，所述第四电极113与所述第一电极102材料相同。\n\n[0052]所述第二封装层114设于所述第四电极113远离所述第二发光层112的一侧，所述第二封装层114用于保护所述透光显示区120，阻隔水氧。同时也可以封装所述透光显示区120，进一步保护所述主显示区110的OLED器件结构。\n\n[0053]本发明由于Micro LED为无机材料，其发光效率高，且寿命长，因而即使所述透光显示区120的第二发光单元1121亮度比所述主显示区110的第一发光单元的亮度更高，也不会发生明显衰减。\n\n[0054]另外，由于所述透光显示区120的第二发光单元1121的密度低，整个子像素数量少，因而，对Micro LED转移良率要求不会太苛刻。\n\n[0055]如图4所示，本发明还提供一种显示装置200，包括所述显示面板100以及摄像模块201，所述摄像模块201设于所述显示面板100下方且对应所述透光显示区120。\n\n[0056]本发明显示面板及显示装置通过在显示面板的透光显示区设置Micro LED作为透光显示区的显示单元，可以提高透光显示区的亮度，可以解决了现有技术中显示面板寿命变短、摄像头区域亮度异常的问题。并且本发明由于Micro LED为无机材料，其发光效率高，且寿命长，因而即使所述透光显示区的第二发光单元亮度比所述主显示区的第一发光单元的亮度更高，也不会发生明显衰减。另外，由于所述透光显示区的第二发光单元的密度低，整个子像素数量少，因而，对Micro LED转移良率要求不会太苛刻。\n\n[0057]应当指出，对于经充分说明的本发明来说，还可具有多种变换及改型的实施方案，并不局限于上述实施方式的具体实施例。上述实施例仅仅作为本发明的说明，而不是对发明的限制。总之，本发明的保护范围应包括那些对于本领域普通技术人员来说显而易见的变换或替代以及改型。');
INSERT INTO `os_patent_instruction_text` VALUES (10659, 23713, '技术领域\n\n[0001]本发明涉及光电子技术领域，尤其涉及一种Micro LED器件及显示面板。\n\n背景技术\n\n[0002]微发光二极体显示器(Micro LED Display)为新一代的显示技术，Micro LED继承了LED的特性，具有尺寸小、重量轻、亮度高、寿命长、功耗低、响应时间快及可控性强的优点，且Micro LED的色域能大于120％，PPI(像素密度)能达到1500。\n\n[0003]通常Micro LED器件的尺寸会小于50μm，此时在侧边易产生漏电流，侧边悬空键会导致非辐射复合，电流拥堵效应和热效应变弱，会严重影响Micro LED器件的发光效率。\n\n[0004]因此，需要提供一种新的Micro LED器件，以解决上述问题。\n\n发明内容\n\n[0005]本发明提供一种Micro LED器件，通过对透明导电层的设计，避免电流经过接近侧壁的区域，以解决现有的Micro LED器件因尺寸小而在侧边发生漏电流、非辐射复合等问题，进而影响显示的技术问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明提供一种Micro LED器件，包括：\n\n[0008]N型层，所述N型层设置在沉积有缓冲层的衬底表面，所述N型层表面覆盖有有源层；\n\n[0009]P型层，所述P型层表面设置有透明导电层，所述P型层覆盖所述有源层；\n\n[0010]所述透明导电层的每条边与所述P型层对应的边界之间设置有预设距离，以增大所述Micro LED器件中的电流密度。\n\n[0011]根据本发明一优选实施例，所述预设距离大于2-5μm，以增大所述Micro LED器件中的电流密度。\n\n[0012]根据本发明一优选实施例，所述透明导电层的每条边与所述P型层的边界之间的预设距离相同，所述透明导电层的中心点与所述P型层的中心点相互重合。\n\n[0013]根据本发明一优选实施例，所述透明导电层的每条边与所述P型层的边界之间的预设距离不尽相同，所述透明导电层的中心点偏离所述P型层的中心点。\n\n[0014]根据本发明一优选实施例，所述P型层分为五个区域，所述五个区域互相不重合，所述P型层的中心点至所述P型层的每个顶点之间按照距离等分有四个等分点，包括多个第一等分点，多个第二等分点，多个第三等分点以及多个第四等分点；\n\n[0015]其中，所述第一等分点邻近所述P型层的中心点，所述第四等分点邻近所述P型层对应的顶点；\n\n[0016]所述第一等分点连接形成第一区域，所述第二等分点连接形成第二区域，所述第三等分点连接形成第三区域；\n\n[0017]所述透明导电层至少覆盖所述第一区域、所述第二区域和所述第三区域。\n\n[0018]根据本发明一优选实施例，所述Micro LED器件还包括有金属电极；\n\n[0019]其中，所述透明导电层连接有第一金属电极，所述第一金属电极还连接有驱动电路。\n\n[0020]根据本发明一优选实施例，所述Micro LED器件采用水平结构，所述N型层的面积大于所述P型层的面积，所述N型层远离所述透明导电层的一侧连接有第二金属电极。\n\n[0021]根据本发明一优选实施例，所述Micro LED器件采用垂直结构，所述N型层连接有第二金属电极，所述第二金属电极与所述第一金属电极相对设置。\n\n[0022]根据本发明一优选实施例，所述Micro LED器件中的电流从所述第一金属电极流向所述第二金属电极，且集中在所述Micro LED器件的与所述第一区域、所述第二区域、所述第三区域相对应的区域，以增大电流密度。\n\n[0023]依据本发明的上述目的，提出一种显示面板，包括有阵列基板以及分布在所述阵列基板上的Micro LED器件，所述Micro LED器件为以上所述的Micro LED器件。\n\n[0024]本发明的有益效果为：相较于现有的Micro LED器件及显示面板，本发明的MicroLED器件及显示面板通过对透明导电层进行图形化设计，在透明导电层的每条边与P型层对应的边界之间设置预设距离，透明导电层连接金属电极，电流集中在芯片的中心区域，不靠近边缘部分，增大了电流密度，提高芯片的发光效率；解决了现有的Micro LED器件及显示面板因尺寸变小而在边缘发生的漏电流、非辐射复合等现象，从而使芯片的发光效率显著下降的技术问题。\n\n附图说明\n\n[0025]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0026]图1为一种现有的Micro LED器件的结构示意图；\n\n[0027]图2为本发明的Micro LED器件的结构示意图；\n\n[0028]图3a为本发明的一种Micro LED器件的截面结构示意图；\n\n[0029]图3b为本发明的一种Micro LED器件的俯视结构示意图；\n\n[0030]图4a为本发明的另一种Micro LED器件的截面结构示意图；\n\n[0031]图4b为本发明的另一种Micro LED器件的俯视结构示意图。\n\n具体实施方式\n\n[0032]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0033]本发明针对现有的Micro LED器件由于尺寸变小，而在侧壁发生明显的边缘效应，如产生漏电流、导致非辐射复合等现象，严重影响芯片的发光效率的技术问题，本实施例能够解决该缺陷。\n\n[0034]如图1所示，图1是现有的Micro LED器件的结构示意图，通常是在衬底101上沉积整面的LED结构，包括缓冲层102、N型层103、有源层104和P型层105。\n\n[0035]一般来说，P型层105和N型层103用的是GaN，而p-GaN的载流子浓度大约是1E17-5E17cm-3，远小于n-GaN载流子浓度(＞1E18cm-3)。因此p-GaN层的导电能力较差，需要在p-GaN上沉积一层透明导电层106。这一层通常为ITO或者AlZnO(AZO)等透明高导电的材料，具有良好导电性。\n\n[0036]但由于Micro LED器件在边缘具有侧壁效应，在电流通过电极和透明导电层106将Micro LED器件导通时，容易在边界处产生漏电流，并且在边缘还会有非辐射复合发生，极大的降低Micro LED器件的发光效率。\n\n[0037]如图2所示，本发明的Micro LED器件包括有：衬底201；所述衬底201上方沉积有缓冲层202；所述缓冲层202上方依次沉积有N型层203、有源层204、P型层205和透明导电层206。\n\n[0038]可选地，所述缓冲层202可以为U-GaN，也就是未掺杂GaN，是在制备LED结构之前，为了提高GaN材料晶体质量而生长的缓冲/基底层；所述有源层204可以是多量子阱，是为了限制P型材料的空穴和N型材料的电子，使它们的发光效率能有很大的提升。\n\n[0039]本发明的P型材料和N型材料不限制是GaN，也可以是InGaN、GaAs/GaAsInP、AlInGaAs等材料。\n\n[0040]所述透明导电层206包含有多条边，所述透明导电层206的每条边与所述P型层205对应的边界之间设置有预设距离207，所述预设距离207在2-5μm以上，这是因为所述MicroLED器件的边缘2-5μm区域的发光效率较差。\n\n[0041]所述透明导电层206的形状不限于是矩形或四边形，可以是六边形等其它图形，具体随所述Micro LED器件的形状所改变。\n\n[0042]所述透明导电层206包含有多条边，每条边距离所述P型层205的边界的所述预设距离207在2-5μm以上，每条边与所述P型层205的边界的所述预设距离207可以相同，也可以不尽相同；当所述透明导电层206的每条边与所述P型层205的边界的所述预设距离207相同时，所述透明导电层206的中心点与所述P型层205的中心点重合；当所述透明导电层206的每条边与所述P型层205的边界之间的所述预设距离207不相同时，所述透明导电层206的中心点偏离所述P型层205的中心点。\n\n[0043]所述Micro LED器件的大小尺寸不尽相同，当所述Micro LED器件为50*50μm大小时，所述透明导电层206的边与所述P型层205的边界之间的所述预设距离207大于5μm；当所述Micro LED器件为10*10μm大小时，所述透明导电层206的边与所述P型层205的边界之间的所述预设距离207大于2μm；即所述透明导电层206的边与所述P型层205的边界的最短所述预设距离207视所述Micro LED器件的大小决定，所述透明导电层206应至少覆盖所述P型层205的中心区域，使电流集中在所述透明导电层206的垂直方向区域，能避免电流扩展到所述Micro LED器件的边界，而产生非辐射复合、漏电流等问题。\n\n[0044]例如，所述透明导电层206应至少覆盖所述P型层205的中心区域具体可为：将所述P型层205分为五个区域，所述五个区域互相不重合，所述P型层205的中心点至所述P型层205的每个顶点之间按照距离等分有四个等分点，包括多个第一等分点，多个第二等分点，多个第三等分点以及多个第四等分点；其中，所述第一等分点邻近所述P型层205的中心点，所述第四等分点邻近所述P型层205对应的顶点；所述第一等分点连接形成第一区域，所述第二等分点连接形成第二区域，所述第三等分点连接形成第三区域；所述透明导电层206至少覆盖所述第一区域、所述第二区域和所述第三区域。\n\n[0045]如图3a、3b所示，所述Micro LED器件采用水平结构，所述Micro LED器件还包括有金属电极，在此结构中，所述透明导电层306连接有第一金属电极308a，所述第一金属电极308a另外还连接有外部驱动电路，所述N型层303的面积大于所述P型层305的面积，在所述N型层303远离所述透明导电层306的一侧连接有第二金属电极308b。\n\n[0046]所述第一金属电极308a与所述第二金属电极308b同侧设置，电流由所述第一金属电极308a流向所述第二金属电极308b。\n\n[0047]所述透明导电层306的每条边与所述P型层305的对应边界之间设置有预设距离307，所述透明导电层306的边界与所述P型层305的边界之间的预设距离307大于2-5μm，电流在所述透明导电层306的垂直方向区域扩展，并在所述Micro LED器件的中心区域流通，流经所述P型层305、所述有源层304、所述N型层303，电流避免经过所述Micro LED器件的边缘区域，以防止出现非辐射复合、漏电流等现象，从而提高所述Micro LED器件的发光效率。\n\n[0048]所述透明导电层306包含有多条边，每条边距离所述P型层305的边界的所述预设距离307在2-5μm以上，每条边与所述P型层305的边界的所述预设距离307可以相同，也可以不尽相同；当所述透明导电层306的每条边与所述P型层305的边界的所述预设距离307相同时，所述透明导电层306的中心点与所述P型层305的中心点重合；当所述透明导电层306的每条边与所述P型层305的边界之间的所述预设距离307不相同时，所述透明导电层306的中心点偏离所述P型层305的中心点。\n\n[0049]如图4a、4b所示，所述Micro LED器件采用垂直结构，所述Micro LED器件还包括有金属电极，在此结构中，所述透明导电层406连接有第一金属电极408a，所述第一金属电极408a另外还连接有外部驱动电路，所述N型层403连接有第二金属电极408b，所述第一金属电极408a与所述第二金属电极408b相对设置，所述Micro LED器件中的电流由所述第一金属电极408a流向所述第二金属电极408b。\n\n[0050]所述透明导电层406的每条边与所述P型层405的对应边界之间设置有预设距离407，所述透明导电层406的边界与所述P型层405的边界之间的预设距离407大于2-5μm，电流在所述透明导电层406的垂直方向区域扩展，并在所述Micro LED器件的中心区域流通，流经所述P型层405、所述有源层404、所述N型层403，电流避免经过所述Micro LED器件的边缘区域，以防止出现非辐射复合、漏电流等现象，从而提高所述Micro LED器件的发光效率。\n\n[0051]所述透明导电层406包含有多条边，每条边距离所述P型层405的边界的所述预设距离407在2-5μm以上，每条边与所述P型层405的边界的所述预设距离407可以相同，也可以不尽相同；当所述透明导电层406的每条边与所述P型层405的边界的所述预设距离407相同时，所述透明导电层406的中心点与所述P型层405的中心点重合；当所述透明导电层406的每条边与所述P型层405的边界之间的所述预设距离407不相同时，所述透明导电层406的中心点偏离所述P型层405的中心点。\n\n[0052]在本发明的Micro LED器件中，所述第一金属电极和所述第二金属电极可以相同，也可以不相同，所述金属电极的材料可以是NiAu，CrPaAu，TiAlNiAu等；所述金属电极的大小不局限，当光源在所述透明导电层一侧时，所述第一金属电极小于所述透明导电层，以防止所述第一金属电极遮光、影响发光效率；当光源不在所述透明导电层一侧时，所述第一金属电极的大小不做限制，可以比所述透明导电层大，也可以比所述透明导电层小。\n\n[0053]其中所述金属电极可以为NiAu或其它导电金属，所述透明导电层可以是ITO、AlZnO或其它材料。\n\n[0054]本发明所述Micro LED器件可以是任意一种颜色的Micro LED器件，在本发明中对此不做限定。\n\n[0055]本发明的所述Micro LED器件通过转移方式转移到阵列基板上，其方式不做限定，可以是正装，也可以是倒装等方式。\n\n[0056]本发明的优选实施例的显示面板的工作原理跟上述优选实施例的Micro LED器件的工作原理一致，具体可参考上述优选实施例的Micro LED器件的工作原理，此处不再做赘述。\n\n[0057]本发明的有益效果为：相较于现有的Micro LED器件及显示面板，本发明的MicroLED器件及显示面板通过对透明导电层进行图形化设计，在透明导电层的每条边与P型层对应的边界之间设置预设距离，透明导电层连接金属电极，电流集中在芯片的中心区域，不靠近边缘部分，增大了电流密度，提高芯片的发光效率；解决了现有的Micro LED器件及阵列基板因尺寸变小而在边缘发生的漏电流、非辐射复合等现象，从而使芯片的发光效率显著下降的技术问题。\n\n[0058]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及光电子技术领域，尤其涉及一种Micro LED器件及显示面板。\n\n背景技术\n\n[0002]微发光二极体显示器(Micro LED Display)为新一代的显示技术，Micro LED继承了LED的特性，具有尺寸小、重量轻、亮度高、寿命长、功耗低、响应时间快及可控性强的优点，且Micro LED的色域能大于120％，PPI(像素密度)能达到1500。\n\n[0003]通常Micro LED器件的尺寸会小于50μm，此时在侧边易产生漏电流，侧边悬空键会导致非辐射复合，电流拥堵效应和热效应变弱，会严重影响Micro LED器件的发光效率。\n\n[0004]因此，需要提供一种新的Micro LED器件，以解决上述问题。\n\n发明内容\n\n[0005]本发明提供一种Micro LED器件，通过对透明导电层的设计，避免电流经过接近侧壁的区域，以解决现有的Micro LED器件因尺寸小而在侧边发生漏电流、非辐射复合等问题，进而影响显示的技术问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明提供一种Micro LED器件，包括：\n\n[0008]N型层，所述N型层设置在沉积有缓冲层的衬底表面，所述N型层表面覆盖有有源层；\n\n[0009]P型层，所述P型层表面设置有透明导电层，所述P型层覆盖所述有源层；\n\n[0010]所述透明导电层的每条边与所述P型层对应的边界之间设置有预设距离，以增大所述Micro LED器件中的电流密度。\n\n[0011]根据本发明一优选实施例，所述预设距离大于2-5μm，以增大所述Micro LED器件中的电流密度。\n\n[0012]根据本发明一优选实施例，所述透明导电层的每条边与所述P型层的边界之间的预设距离相同，所述透明导电层的中心点与所述P型层的中心点相互重合。\n\n[0013]根据本发明一优选实施例，所述透明导电层的每条边与所述P型层的边界之间的预设距离不尽相同，所述透明导电层的中心点偏离所述P型层的中心点。\n\n[0014]根据本发明一优选实施例，所述P型层分为五个区域，所述五个区域互相不重合，所述P型层的中心点至所述P型层的每个顶点之间按照距离等分有四个等分点，包括多个第一等分点，多个第二等分点，多个第三等分点以及多个第四等分点；\n\n[0015]其中，所述第一等分点邻近所述P型层的中心点，所述第四等分点邻近所述P型层对应的顶点；\n\n[0016]所述第一等分点连接形成第一区域，所述第二等分点连接形成第二区域，所述第三等分点连接形成第三区域；\n\n[0017]所述透明导电层至少覆盖所述第一区域、所述第二区域和所述第三区域。\n\n[0018]根据本发明一优选实施例，所述Micro LED器件还包括有金属电极；\n\n[0019]其中，所述透明导电层连接有第一金属电极，所述第一金属电极还连接有驱动电路。\n\n[0020]根据本发明一优选实施例，所述Micro LED器件采用水平结构，所述N型层的面积大于所述P型层的面积，所述N型层远离所述透明导电层的一侧连接有第二金属电极。\n\n[0021]根据本发明一优选实施例，所述Micro LED器件采用垂直结构，所述N型层连接有第二金属电极，所述第二金属电极与所述第一金属电极相对设置。\n\n[0022]根据本发明一优选实施例，所述Micro LED器件中的电流从所述第一金属电极流向所述第二金属电极，且集中在所述Micro LED器件的与所述第一区域、所述第二区域、所述第三区域相对应的区域，以增大电流密度。\n\n[0023]依据本发明的上述目的，提出一种显示面板，包括有阵列基板以及分布在所述阵列基板上的Micro LED器件，所述Micro LED器件为以上所述的Micro LED器件。\n\n[0024]本发明的有益效果为：相较于现有的Micro LED器件及显示面板，本发明的MicroLED器件及显示面板通过对透明导电层进行图形化设计，在透明导电层的每条边与P型层对应的边界之间设置预设距离，透明导电层连接金属电极，电流集中在芯片的中心区域，不靠近边缘部分，增大了电流密度，提高芯片的发光效率；解决了现有的Micro LED器件及显示面板因尺寸变小而在边缘发生的漏电流、非辐射复合等现象，从而使芯片的发光效率显著下降的技术问题。\n\n附图说明\n\n[0025]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0026]图1为一种现有的Micro LED器件的结构示意图；\n\n[0027]图2为本发明的Micro LED器件的结构示意图；\n\n[0028]图3a为本发明的一种Micro LED器件的截面结构示意图；\n\n[0029]图3b为本发明的一种Micro LED器件的俯视结构示意图；\n\n[0030]图4a为本发明的另一种Micro LED器件的截面结构示意图；\n\n[0031]图4b为本发明的另一种Micro LED器件的俯视结构示意图。\n\n具体实施方式\n\n[0032]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0033]本发明针对现有的Micro LED器件由于尺寸变小，而在侧壁发生明显的边缘效应，如产生漏电流、导致非辐射复合等现象，严重影响芯片的发光效率的技术问题，本实施例能够解决该缺陷。\n\n[0034]如图1所示，图1是现有的Micro LED器件的结构示意图，通常是在衬底101上沉积整面的LED结构，包括缓冲层102、N型层103、有源层104和P型层105。\n\n[0035]一般来说，P型层105和N型层103用的是GaN，而p-GaN的载流子浓度大约是1E17-5E17cm-3，远小于n-GaN载流子浓度(＞1E18cm-3)。因此p-GaN层的导电能力较差，需要在p-GaN上沉积一层透明导电层106。这一层通常为ITO或者AlZnO(AZO)等透明高导电的材料，具有良好导电性。\n\n[0036]但由于Micro LED器件在边缘具有侧壁效应，在电流通过电极和透明导电层106将Micro LED器件导通时，容易在边界处产生漏电流，并且在边缘还会有非辐射复合发生，极大的降低Micro LED器件的发光效率。\n\n[0037]如图2所示，本发明的Micro LED器件包括有：衬底201；所述衬底201上方沉积有缓冲层202；所述缓冲层202上方依次沉积有N型层203、有源层204、P型层205和透明导电层206。\n\n[0038]可选地，所述缓冲层202可以为U-GaN，也就是未掺杂GaN，是在制备LED结构之前，为了提高GaN材料晶体质量而生长的缓冲/基底层；所述有源层204可以是多量子阱，是为了限制P型材料的空穴和N型材料的电子，使它们的发光效率能有很大的提升。\n\n[0039]本发明的P型材料和N型材料不限制是GaN，也可以是InGaN、GaAs/GaAsInP、AlInGaAs等材料。\n\n[0040]所述透明导电层206包含有多条边，所述透明导电层206的每条边与所述P型层205对应的边界之间设置有预设距离207，所述预设距离207在2-5μm以上，这是因为所述MicroLED器件的边缘2-5μm区域的发光效率较差。\n\n[0041]所述透明导电层206的形状不限于是矩形或四边形，可以是六边形等其它图形，具体随所述Micro LED器件的形状所改变。\n\n[0042]所述透明导电层206包含有多条边，每条边距离所述P型层205的边界的所述预设距离207在2-5μm以上，每条边与所述P型层205的边界的所述预设距离207可以相同，也可以不尽相同；当所述透明导电层206的每条边与所述P型层205的边界的所述预设距离207相同时，所述透明导电层206的中心点与所述P型层205的中心点重合；当所述透明导电层206的每条边与所述P型层205的边界之间的所述预设距离207不相同时，所述透明导电层206的中心点偏离所述P型层205的中心点。\n\n[0043]所述Micro LED器件的大小尺寸不尽相同，当所述Micro LED器件为50*50μm大小时，所述透明导电层206的边与所述P型层205的边界之间的所述预设距离207大于5μm；当所述Micro LED器件为10*10μm大小时，所述透明导电层206的边与所述P型层205的边界之间的所述预设距离207大于2μm；即所述透明导电层206的边与所述P型层205的边界的最短所述预设距离207视所述Micro LED器件的大小决定，所述透明导电层206应至少覆盖所述P型层205的中心区域，使电流集中在所述透明导电层206的垂直方向区域，能避免电流扩展到所述Micro LED器件的边界，而产生非辐射复合、漏电流等问题。\n\n[0044]例如，所述透明导电层206应至少覆盖所述P型层205的中心区域具体可为：将所述P型层205分为五个区域，所述五个区域互相不重合，所述P型层205的中心点至所述P型层205的每个顶点之间按照距离等分有四个等分点，包括多个第一等分点，多个第二等分点，多个第三等分点以及多个第四等分点；其中，所述第一等分点邻近所述P型层205的中心点，所述第四等分点邻近所述P型层205对应的顶点；所述第一等分点连接形成第一区域，所述第二等分点连接形成第二区域，所述第三等分点连接形成第三区域；所述透明导电层206至少覆盖所述第一区域、所述第二区域和所述第三区域。\n\n[0045]如图3a、3b所示，所述Micro LED器件采用水平结构，所述Micro LED器件还包括有金属电极，在此结构中，所述透明导电层306连接有第一金属电极308a，所述第一金属电极308a另外还连接有外部驱动电路，所述N型层303的面积大于所述P型层305的面积，在所述N型层303远离所述透明导电层306的一侧连接有第二金属电极308b。\n\n[0046]所述第一金属电极308a与所述第二金属电极308b同侧设置，电流由所述第一金属电极308a流向所述第二金属电极308b。\n\n[0047]所述透明导电层306的每条边与所述P型层305的对应边界之间设置有预设距离307，所述透明导电层306的边界与所述P型层305的边界之间的预设距离307大于2-5μm，电流在所述透明导电层306的垂直方向区域扩展，并在所述Micro LED器件的中心区域流通，流经所述P型层305、所述有源层304、所述N型层303，电流避免经过所述Micro LED器件的边缘区域，以防止出现非辐射复合、漏电流等现象，从而提高所述Micro LED器件的发光效率。\n\n[0048]所述透明导电层306包含有多条边，每条边距离所述P型层305的边界的所述预设距离307在2-5μm以上，每条边与所述P型层305的边界的所述预设距离307可以相同，也可以不尽相同；当所述透明导电层306的每条边与所述P型层305的边界的所述预设距离307相同时，所述透明导电层306的中心点与所述P型层305的中心点重合；当所述透明导电层306的每条边与所述P型层305的边界之间的所述预设距离307不相同时，所述透明导电层306的中心点偏离所述P型层305的中心点。\n\n[0049]如图4a、4b所示，所述Micro LED器件采用垂直结构，所述Micro LED器件还包括有金属电极，在此结构中，所述透明导电层406连接有第一金属电极408a，所述第一金属电极408a另外还连接有外部驱动电路，所述N型层403连接有第二金属电极408b，所述第一金属电极408a与所述第二金属电极408b相对设置，所述Micro LED器件中的电流由所述第一金属电极408a流向所述第二金属电极408b。\n\n[0050]所述透明导电层406的每条边与所述P型层405的对应边界之间设置有预设距离407，所述透明导电层406的边界与所述P型层405的边界之间的预设距离407大于2-5μm，电流在所述透明导电层406的垂直方向区域扩展，并在所述Micro LED器件的中心区域流通，流经所述P型层405、所述有源层404、所述N型层403，电流避免经过所述Micro LED器件的边缘区域，以防止出现非辐射复合、漏电流等现象，从而提高所述Micro LED器件的发光效率。\n\n[0051]所述透明导电层406包含有多条边，每条边距离所述P型层405的边界的所述预设距离407在2-5μm以上，每条边与所述P型层405的边界的所述预设距离407可以相同，也可以不尽相同；当所述透明导电层406的每条边与所述P型层405的边界的所述预设距离407相同时，所述透明导电层406的中心点与所述P型层405的中心点重合；当所述透明导电层406的每条边与所述P型层405的边界之间的所述预设距离407不相同时，所述透明导电层406的中心点偏离所述P型层405的中心点。\n\n[0052]在本发明的Micro LED器件中，所述第一金属电极和所述第二金属电极可以相同，也可以不相同，所述金属电极的材料可以是NiAu，CrPaAu，TiAlNiAu等；所述金属电极的大小不局限，当光源在所述透明导电层一侧时，所述第一金属电极小于所述透明导电层，以防止所述第一金属电极遮光、影响发光效率；当光源不在所述透明导电层一侧时，所述第一金属电极的大小不做限制，可以比所述透明导电层大，也可以比所述透明导电层小。\n\n[0053]其中所述金属电极可以为NiAu或其它导电金属，所述透明导电层可以是ITO、AlZnO或其它材料。\n\n[0054]本发明所述Micro LED器件可以是任意一种颜色的Micro LED器件，在本发明中对此不做限定。\n\n[0055]本发明的所述Micro LED器件通过转移方式转移到阵列基板上，其方式不做限定，可以是正装，也可以是倒装等方式。\n\n[0056]本发明的优选实施例的显示面板的工作原理跟上述优选实施例的Micro LED器件的工作原理一致，具体可参考上述优选实施例的Micro LED器件的工作原理，此处不再做赘述。\n\n[0057]本发明的有益效果为：相较于现有的Micro LED器件及显示面板，本发明的MicroLED器件及显示面板通过对透明导电层进行图形化设计，在透明导电层的每条边与P型层对应的边界之间设置预设距离，透明导电层连接金属电极，电流集中在芯片的中心区域，不靠近边缘部分，增大了电流密度，提高芯片的发光效率；解决了现有的Micro LED器件及阵列基板因尺寸变小而在边缘发生的漏电流、非辐射复合等现象，从而使芯片的发光效率显著下降的技术问题。\n\n[0058]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10660, 23714, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种Mini-LED背光及其制作方法。\n\n背景技术\n\n[0002]迷你发光二极管(Mini-LED)为芯片尺寸在200微米以下的产品。\n\n[0003]市场上将Mini-LED用于LCD显示背光光源，因其可实现超薄，多分区同时利用又是小尺寸芯片产品，能够在现实效果上媲美OLED产品，且在材料成本上又能够较OLED更有竞争优势而被提出使用。\n\n[0004]受限于现在的打件机台，Mini-LED产品均是打件成小片的灯板，再将小片灯板拼接成大尺寸背光。Mini-LED背光的单片灯板尺寸有限(现行以芯片绑定(Die bonding)机台进行，常规尺寸为300mm*300mm)。在大尺寸电视背光设计中采用Mini-LED灯板时，面临必须采用多片Mini-LED灯板拼接的问题。\n\n[0005]参见图1A及图1B，其为一种现有Mini-LED灯板拼接结构侧视图，图1B为现有Mini-LED灯板拼接结构的俯视图。背板1上设有许多小片的灯板，如灯板2、灯板3等，由多片灯板拼接成大尺寸背光，灯板可以由印刷电路板(PCB)制成，灯板上设有呈阵列排布的Mini-LED4。\n\n[0006]假设相邻灯板2和灯板3之间最近的Mini-LED 4的设计间距为L，灯板2和灯板3板内的Mini-LED 4间距(Pitch)为P。通常为了保证良好的品质效果(Mini-LED间距与背光光学距离(OD)值相关联)，当背光OD值设计值固定时，希望L＝P以保证灯板间亮度过渡均匀。然而由于印刷电路板制作的灯板2和灯板3之间外观尺寸存在公差，组装过程亦存在组装公差，将无法有效保证L＝P。当L>P时，灯板2和灯板3间凸显为暗线。特别是当灯板2和灯板3表面进行白漆处理后，而拼缝区域反射不足，更显示出暗线状态；当L[0007]假设此时灯板2中边缘Mini-LED 4距灯板2边缘距离为L1。若L1＝L/2，为实现L＝P，对灯板2和灯板3尺寸控制及组装精度要求非常高。容易造成拼接不良。因此通常希望L1[0008]因此，本发明的目的在于提供一种Mini-LED背光及其制作方法，解决Mini-LED背光的灯板板间暗线问题。\n\n[0009]为实现上述目的，本发明提供了一种Mini-LED背光，包括：背板以及多个矩形的设有呈阵列排布Mini-LED的灯板，所述灯板呈阵列排布拼接设置在背板上；相邻灯板之间设有拼缝，并且所述背板设有对应于所述拼缝的凹槽，所述拼缝及凹槽内充满经固化的白胶。\n\n[0010]其中，所述背板为电解亚铅镀锌钢板材质基板或者为铝基板。\n\n[0011]其中，所述凹槽在背板上的走向与对应的拼缝一致。\n\n[0012]其中，所述凹槽截面为矩形，所述凹槽宽度与所述拼缝宽度一致。\n\n[0013]其中，假设灯板上Mini-LED的间距为P，灯板上邻近拼缝的边缘Mini-LED距离邻近拼缝的灯板边缘的距离为L1，所述凹槽的宽度X设定为X[0014]其中，所述凹槽深度为0.2毫米～0.4毫米。\n\n[0015]其中，所述白胶的上表面为平面，与所述灯板上表面平齐。\n\n[0016]其中，所述白胶的上表面为半圆形凸包，该凸包略高于所述灯板上表面。\n\n[0017]本发明还提供了一种Mini-LED背光的制作方法，包括：\n\n[0018]步骤S1、准备背板；\n\n[0019]步骤S2、在背板上形成对应于相邻灯板之间拼缝的凹槽；\n\n[0020]步骤S3、在背板上放点胶治具；\n\n[0021]步骤S4、在凹槽内填充满白胶；\n\n[0022]步骤S5、先对白胶进行预固化，当白胶不再呈流体状时，将点胶治具取下，再对白胶进行二次固化；\n\n[0023]步骤S6、将灯板根据背板上设置白胶位置拼接固定在背板上。\n\n[0024]综上，本发明的Mini-LED背光及其制作方法能够有效改善Mini-LED背光的灯板板间暗线问题。\n\n附图说明\n\n[0025]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。\n\n[0026]附图中，\n\n[0027]图1A为一种现有Mini-LED灯板拼接结构侧视图；\n\n[0028]图1B为现有Mini-LED灯板拼接结构的俯视图；\n\n[0029]图2为本发明Mini-LED背光一较佳实施例的侧视图；\n\n[0030]图3为本发明Mini-LED背光的制作方法一较佳实施例的流程图；\n\n[0031]图4为本发明Mini-LED背光又一较佳实施例中背胶的侧视图。\n\n具体实施方式\n\n[0032]参见图2，其为本发明Mini-LED背光一较佳实施例的侧视图，该Mini-LED背光主要包括：背板10以及多个矩形的设有呈阵列排布Mini-LED 40的灯板20，所述灯板20呈阵列排布拼接设置在背板10上；相邻灯板20之间设有拼缝，并且所述背板10设有对应于所述拼缝的凹槽，所述拼缝及凹槽内充满经固化的白胶50。\n\n[0033]本发明在背板10上做凹槽设计，非凹槽部分用于固定灯板20；在凹槽内填充白胶50，白胶50的高度要高出凹槽，白胶50的反射率在90％以上，与现行反射片的反射率相似。白胶可采用PA6T、PA9T、PCT、EMC或SMC材料。在此实施例中，白胶50的上表面为平面，与灯板10上表面平齐；在其他实施例中，白胶的上表面也可以为半圆形凸包，该凸包略高于灯板上表面。\n\n[0034]本发明还相应提供了制作前述Mini-LED背光的方法，参见图3，其为本发明Mini-LED背光的制作方法一较佳实施例的流程图，可参考图2进行理解。本发明中，在背板10上用模具成型或铣床成型方式形成许多凹槽，在凹槽中注入白胶50，利用白胶的高反射率实现灯板20间反射率与灯板20面内反射率相同，从而实现出光均匀。其实现方式如下流程，主要包括如下步骤：\n\n[0035]步骤S1、准备背板10。背板10可以采用常规的SECC(电解亚铅镀锌钢板)材质基板，或者用铝基板。铝基板的散热功能会优于SECC基板。基板厚度可以为0.8mm～1mm。\n\n[0036]步骤S2、在背板10上形成对应于相邻灯板20之间拼缝的凹槽。凹槽在背板上的走向与对应的拼缝一致。凹槽截面可以为矩形，凹槽宽度可以与拼缝宽度一致；凹槽也可以是其他适合的形状。可以采用在SECC基板或者铝基板上用冲压成型或者铣床成型方式，形成背板10上的凹槽。凹槽宽度可以取决于Mini-LED 40间距及Mini-LED 40离边的距离。如图2所示，假设灯板20上Mini-LED的间距为P，灯板20上邻近拼缝的边缘Mini-LED 40距离邻近拼缝的灯板20边缘的距离为L1，根据X+2*L1[0037]步骤S3、在背板10上放点胶治具。在已经成型的背板10上放点胶治具30，该点胶治具30可以盖住背板10上需要放灯板20的位置，并将凹槽部分裸露。点胶治具30的高度可以与灯板20厚度相同，从而可以确保填充的白胶50的高度。\n\n[0038]步骤S4、在凹槽内填充满白胶50。白胶50的量要填充满凹槽，并且上表面与点胶治具30上表面平齐，如图3所示，白胶50的上表面可以是平面，与点胶治具30上表面平齐。\n\n[0039]参见图4，其为本发明Mini-LED背光又一较佳实施例中背胶的侧视图。如图4所示，白胶51的上表面也可以是半圆形凸包，该凸包可略高于点胶治具30上表面。\n\n[0040]步骤S5、先对白胶50进行预固化，当白胶50不再呈流体状时，将点胶治具30取下，再对白胶50进行二次固化。二次固化将白胶50完全固定在背板10上。白胶50的固化可以选用UV固化或者热固化，这主要取决于选用的白胶的类型，此处不做限制。\n\n[0041]步骤S6、将灯板20根据背板10上设置白胶50的位置拼接固定在背板10上。在涂布好白胶50的背板10上贴附灯板20，灯板20可以用胶贴合的方式固定在背板10上。\n\n[0042]综上，本发明的Mini-LED背光及其制作方法能够有效改善Mini-LED背光的灯板板间暗线问题。\n\n[0043]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种Mini-LED背光及其制作方法。\n\n背景技术\n\n[0002]迷你发光二极管(Mini-LED)为芯片尺寸在200微米以下的产品。\n\n[0003]市场上将Mini-LED用于LCD显示背光光源，因其可实现超薄，多分区同时利用又是小尺寸芯片产品，能够在现实效果上媲美OLED产品，且在材料成本上又能够较OLED更有竞争优势而被提出使用。\n\n[0004]受限于现在的打件机台，Mini-LED产品均是打件成小片的灯板，再将小片灯板拼接成大尺寸背光。Mini-LED背光的单片灯板尺寸有限(现行以芯片绑定(Die bonding)机台进行，常规尺寸为300mm*300mm)。在大尺寸电视背光设计中采用Mini-LED灯板时，面临必须采用多片Mini-LED灯板拼接的问题。\n\n[0005]参见图1A及图1B，其为一种现有Mini-LED灯板拼接结构侧视图，图1B为现有Mini-LED灯板拼接结构的俯视图。背板1上设有许多小片的灯板，如灯板2、灯板3等，由多片灯板拼接成大尺寸背光，灯板可以由印刷电路板(PCB)制成，灯板上设有呈阵列排布的Mini-LED4。\n\n[0006]假设相邻灯板2和灯板3之间最近的Mini-LED 4的设计间距为L，灯板2和灯板3板内的Mini-LED 4间距(Pitch)为P。通常为了保证良好的品质效果(Mini-LED间距与背光光学距离(OD)值相关联)，当背光OD值设计值固定时，希望L＝P以保证灯板间亮度过渡均匀。然而由于印刷电路板制作的灯板2和灯板3之间外观尺寸存在公差，组装过程亦存在组装公差，将无法有效保证L＝P。当L>P时，灯板2和灯板3间凸显为暗线。特别是当灯板2和灯板3表面进行白漆处理后，而拼缝区域反射不足，更显示出暗线状态；当L[0007]假设此时灯板2中边缘Mini-LED 4距灯板2边缘距离为L1。若L1＝L/2，为实现L＝P，对灯板2和灯板3尺寸控制及组装精度要求非常高。容易造成拼接不良。因此通常希望L1[0008]因此，本发明的目的在于提供一种Mini-LED背光及其制作方法，解决Mini-LED背光的灯板板间暗线问题。\n\n[0009]为实现上述目的，本发明提供了一种Mini-LED背光，包括：背板以及多个矩形的设有呈阵列排布Mini-LED的灯板，所述灯板呈阵列排布拼接设置在背板上；相邻灯板之间设有拼缝，并且所述背板设有对应于所述拼缝的凹槽，所述拼缝及凹槽内充满经固化的白胶。\n\n[0010]其中，所述背板为电解亚铅镀锌钢板材质基板或者为铝基板。\n\n[0011]其中，所述凹槽在背板上的走向与对应的拼缝一致。\n\n[0012]其中，所述凹槽截面为矩形，所述凹槽宽度与所述拼缝宽度一致。\n\n[0013]其中，假设灯板上Mini-LED的间距为P，灯板上邻近拼缝的边缘Mini-LED距离邻近拼缝的灯板边缘的距离为L1，所述凹槽的宽度X设定为X[0014]其中，所述凹槽深度为0.2毫米～0.4毫米。\n\n[0015]其中，所述白胶的上表面为平面，与所述灯板上表面平齐。\n\n[0016]其中，所述白胶的上表面为半圆形凸包，该凸包略高于所述灯板上表面。\n\n[0017]本发明还提供了一种Mini-LED背光的制作方法，包括：\n\n[0018]步骤S1、准备背板；\n\n[0019]步骤S2、在背板上形成对应于相邻灯板之间拼缝的凹槽；\n\n[0020]步骤S3、在背板上放点胶治具；\n\n[0021]步骤S4、在凹槽内填充满白胶；\n\n[0022]步骤S5、先对白胶进行预固化，当白胶不再呈流体状时，将点胶治具取下，再对白胶进行二次固化；\n\n[0023]步骤S6、将灯板根据背板上设置白胶位置拼接固定在背板上。\n\n[0024]综上，本发明的Mini-LED背光及其制作方法能够有效改善Mini-LED背光的灯板板间暗线问题。\n\n附图说明\n\n[0025]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。\n\n[0026]附图中，\n\n[0027]图1A为一种现有Mini-LED灯板拼接结构侧视图；\n\n[0028]图1B为现有Mini-LED灯板拼接结构的俯视图；\n\n[0029]图2为本发明Mini-LED背光一较佳实施例的侧视图；\n\n[0030]图3为本发明Mini-LED背光的制作方法一较佳实施例的流程图；\n\n[0031]图4为本发明Mini-LED背光又一较佳实施例中背胶的侧视图。\n\n具体实施方式\n\n[0032]参见图2，其为本发明Mini-LED背光一较佳实施例的侧视图，该Mini-LED背光主要包括：背板10以及多个矩形的设有呈阵列排布Mini-LED 40的灯板20，所述灯板20呈阵列排布拼接设置在背板10上；相邻灯板20之间设有拼缝，并且所述背板10设有对应于所述拼缝的凹槽，所述拼缝及凹槽内充满经固化的白胶50。\n\n[0033]本发明在背板10上做凹槽设计，非凹槽部分用于固定灯板20；在凹槽内填充白胶50，白胶50的高度要高出凹槽，白胶50的反射率在90％以上，与现行反射片的反射率相似。白胶可采用PA6T、PA9T、PCT、EMC或SMC材料。在此实施例中，白胶50的上表面为平面，与灯板10上表面平齐；在其他实施例中，白胶的上表面也可以为半圆形凸包，该凸包略高于灯板上表面。\n\n[0034]本发明还相应提供了制作前述Mini-LED背光的方法，参见图3，其为本发明Mini-LED背光的制作方法一较佳实施例的流程图，可参考图2进行理解。本发明中，在背板10上用模具成型或铣床成型方式形成许多凹槽，在凹槽中注入白胶50，利用白胶的高反射率实现灯板20间反射率与灯板20面内反射率相同，从而实现出光均匀。其实现方式如下流程，主要包括如下步骤：\n\n[0035]步骤S1、准备背板10。背板10可以采用常规的SECC(电解亚铅镀锌钢板)材质基板，或者用铝基板。铝基板的散热功能会优于SECC基板。基板厚度可以为0.8mm～1mm。\n\n[0036]步骤S2、在背板10上形成对应于相邻灯板20之间拼缝的凹槽。凹槽在背板上的走向与对应的拼缝一致。凹槽截面可以为矩形，凹槽宽度可以与拼缝宽度一致；凹槽也可以是其他适合的形状。可以采用在SECC基板或者铝基板上用冲压成型或者铣床成型方式，形成背板10上的凹槽。凹槽宽度可以取决于Mini-LED 40间距及Mini-LED 40离边的距离。如图2所示，假设灯板20上Mini-LED的间距为P，灯板20上邻近拼缝的边缘Mini-LED 40距离邻近拼缝的灯板20边缘的距离为L1，根据X+2*L1[0037]步骤S3、在背板10上放点胶治具。在已经成型的背板10上放点胶治具30，该点胶治具30可以盖住背板10上需要放灯板20的位置，并将凹槽部分裸露。点胶治具30的高度可以与灯板20厚度相同，从而可以确保填充的白胶50的高度。\n\n[0038]步骤S4、在凹槽内填充满白胶50。白胶50的量要填充满凹槽，并且上表面与点胶治具30上表面平齐，如图3所示，白胶50的上表面可以是平面，与点胶治具30上表面平齐。\n\n[0039]参见图4，其为本发明Mini-LED背光又一较佳实施例中背胶的侧视图。如图4所示，白胶51的上表面也可以是半圆形凸包，该凸包可略高于点胶治具30上表面。\n\n[0040]步骤S5、先对白胶50进行预固化，当白胶50不再呈流体状时，将点胶治具30取下，再对白胶50进行二次固化。二次固化将白胶50完全固定在背板10上。白胶50的固化可以选用UV固化或者热固化，这主要取决于选用的白胶的类型，此处不做限制。\n\n[0041]步骤S6、将灯板20根据背板10上设置白胶50的位置拼接固定在背板10上。在涂布好白胶50的背板10上贴附灯板20，灯板20可以用胶贴合的方式固定在背板10上。\n\n[0042]综上，本发明的Mini-LED背光及其制作方法能够有效改善Mini-LED背光的灯板板间暗线问题。\n\n[0043]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10661, 23715, '【技术领域】\n\n[0001]本申请涉及显示技术领域，具体涉及一种发光元件及其制作方法、阵列基板。\n\n【背景技术】\n\n[0002]微发光二极体显示器(Micro LED Display)为新一代的显示技术，结构是微型化LED阵列，也就是将LED结构设计进行薄膜化、微小化与阵列化，使其体积约为目前主流LED大小的1％，每一个像素都能定址、单独驱动发光，将像素点的距离由原本的毫米级降到微米级。微发光二极体显示器承继了LED的特性，具有低功耗、高亮度、超高分辨率与色彩饱和度、反应速度快、超省电、寿命较长、效率较高等优点。\n\n[0003]但是，在微发光二极体显示器技术中，由于芯片尺寸变小，而小尺寸微发光二极体芯片的边缘漏电和边缘非辐射复合现象比较显著，故会导致微发光二极体芯片的发光效率明显下降。\n\n【发明内容】\n\n[0004]本申请的目的在于提供一种发光元件及其制作方法、阵列基板，以改善小尺寸微发光二极体芯片的边缘漏电和边缘非辐射复合现象，进而提高发光效率。\n\n[0005]为了解决上述问题，本申请实施例提供了一种发光元件的制作方法，该发光元件的制作方法包括：提供衬底基板；在衬底基板上制作小于预设尺寸的发光单元；对发光单元的侧面进行去活化处理。\n\n[0006]其中，对发光单元的侧面进行去活化处理的步骤，具体包括：对发光单元的侧面进行预设时长的湿法腐蚀。\n\n[0007]其中，对发光单元的侧面进行去活化处理的步骤，具体包括：对发光单元的侧面进行退火处理，且退火温度不低于预设温度。\n\n[0008]其中，对发光单元的侧面进行去活化处理的步骤，具体包括：在发光单元的侧面上覆盖一层钝化膜。\n\n[0009]其中，在衬底基板上制作小于预设尺寸的发光单元的步骤，具体包括：在衬底基板上，依次形成n型氮化镓层、量子阱层和p型氮化镓层；对p型氮化镓层、量子阱层和n型氮化镓层进行刻蚀，以形成至少一个小于预设尺寸的发光单元。\n\n[0010]其中，对p型氮化镓层、量子阱层和n型氮化镓层进行刻蚀，以形成至少一个小于预设尺寸的发光单元的步骤，具体包括：通过干法刻蚀，去掉预设区域的p型氮化镓层、量子阱层和n型氮化镓层，以形成多个小于预设尺寸的台面结构和位于相邻两个台面结构之间的切割沟道，其中，台面结构中n型氮化镓层的宽度大于台面结构中p型氮化镓层的宽度和台面结构中量子阱层的宽度；在对发光单元的侧面进行去活化处理的步骤之后，还包括：在台面结构的p型氮化镓层上制作第一电极，并在台面结构的n型氮化镓层上制作第二电极；基于切割沟道对衬底基板进行切割，形成多个发光元件。\n\n[0011]为了解决上述问题，本申请实施例还提供了一种发光元件，该发光元件，包括：衬底基板；小于预设尺寸的发光单元，发光单元设置于衬底基板上，且发光单元的侧面经过去活化处理。\n\n[0012]其中，发光元件还包括钝化膜，钝化膜覆盖侧面。\n\n[0013]其中，发光单元为台面结构，台面结构包括依次远离衬底基板的n型氮化镓层、量子阱层和p型氮化镓层，且n型氮化镓层的宽度大于量子阱层的宽度和p型氮化镓层的宽度；发光元件还包括：第一电极，第一电极位于p型氮化镓层上；第二电极，第二电极位于n型氮化镓层上。\n\n[0014]为了解决上述问题，本申请实施例还提供了一种阵列基板，该阵列基板包括上述任一项发光元件、以及与发光元件电连接的控制电路。\n\n[0015]本申请的有益效果是：区别于现有技术，本申请提供的发光元件的制作方法，通过在衬底基板上制作小于预设尺寸的发光单元，并对发光单元的侧面进行去活化处理，能够减少侧面的缺陷和悬空键，进而改善小尺寸微发光二极体芯片的边缘漏电和边缘非辐射复合现象，以提高发光效率。\n\n【附图说明】\n\n[0016]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0017]图1是本申请实施例提供的发光元件的制作方法的流程示意图；\n\n[0018]图2是图1中S12的流程示意图；\n\n[0019]图3是本申请实施例提供的发光元件的制作方法的另一流程示意图；\n\n[0020]图4是本申请实施例提供的发光元件的制作方法的另一流程示意图；\n\n[0021]图5是本申请实施例提供的发光元件的制作方法的另一流程示意图；\n\n[0022]图6是本申请实施例提供的发光元件的制作方法的另一流程示意图；\n\n[0023]图7是本申请实施例提供的发光元件的结构示意图；\n\n[0024]图8是本申请实施例提供的发光元件的另一结构示意图；\n\n[0025]图9是本申请实施例提供的发光元件的另一结构示意图；\n\n[0026]图10是本申请实施例提供的阵列基板的结构示意图。\n\n【具体实施方式】\n\n[0027]下面结合附图和实施例，对本申请作进一步的详细描述。特别指出的是，以下实施例仅用于说明本申请，但不对本申请的范围进行限定。同样的，以下实施例仅为本申请的部分实施例而非全部实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其它实施例，都属于本申请保护的范围。\n\n[0028]目前，在微发光二极体显示器技术中，由于芯片尺寸变小，而小尺寸微发光二极体芯片的边缘漏电和边缘非辐射复合现象比较显著，故会导致微发光二极体芯片的发光效率明显下降。为了解决上述技术问题，本申请采用的技术方案是提供一种发光元件的制作方法，以改善小尺寸微发光二极体芯片的边缘漏电和边缘非辐射复合现象，提高发光效率。\n\n[0029]请参阅图1，图1是本申请实施例提供的发光元件的制作方法的流程示意图，该发光元件的制作方法具体流程可以如下：\n\n[0030]S11：提供衬底基板。\n\n[0031]其中，衬底基板的材质可以为蓝宝石、碳化硅、硅、砷化镓、氧化锌等。\n\n[0032]S12：在衬底基板上制作小于预设尺寸的发光单元。\n\n[0033]例如，在衬底基板上制作尺寸在100微米以下的发光单元。\n\n[0034]在一个实施例中，如图2所示，S12可以具体包括：\n\n[0035]S121：在衬底基板上，依次形成n型氮化镓层、量子阱层和p型氮化镓层。\n\n[0036]例如，采用金属有机物化学气相沉积(MOCVD)的方法，先在蓝宝石衬底上外延生长得到氮化镓过渡层，然后在氮化镓过渡层上依次外延生长得到n型氮化镓层、量子阱层和p型氮化镓层。\n\n[0037]其中，量子阱层可以包括交替生长的InGaN阱层和GaN垒层，交替周期可以控制在7-15个。\n\n[0038]S122：对p型氮化镓层、量子阱层和n型氮化镓层进行刻蚀，以形成至少一个小于预设尺寸的发光单元。\n\n[0039]例如，沿p型氮化镓层至n型氮化镓层的方向，对p型氮化镓层、量子阱层和n型氮化镓层进行光刻、干法刻蚀以及清洗去胶，以得到至少一个尺寸小于100μm的发光单元，其中，发光单元中n型氮化镓层的宽度等于或大于发光单元中p型氮化镓层的宽度。\n\n[0040]在一个具体实施例中，S122可以具体包括：\n\n[0041]通过干法刻蚀的方法，去掉预设区域的p型氮化镓层、量子阱层和n型氮化镓层，以形成多个小于预设尺寸的台面结构和位于相邻两个台面结构之间的切割沟道，其中，台面结构中n型氮化镓层的宽度大于台面结构中p型氮化镓层的宽度和台面结构中量子阱层的宽度，使得位于p型氮化镓层下方的n型氮化镓层的局部区域暴露出来，以便于发光元件的后续制程，例如制作电极等。\n\n[0042]S13：对发光单元的侧面进行去活化处理。\n\n[0043]具体地，在将上述p型氮化镓层、量子阱层和n型氮化镓层分隔成至少一个小于预设尺寸的发光单元的过程中，发光单元的侧面会产生悬空键和缺陷。\n\n[0044]在本实施例中，发光元件可以为Micro LED芯片，对应的发光单元的尺寸通常小于50μm。与常规尺寸(1-10mm)的LED芯片相比，Micro LED芯片的尺寸变小，芯片的边缘效应凸显。因此，发光单元由于其侧面存在缺陷和悬空键而导致的边缘漏电和非辐射复合现象会比较显著，进而严重影响的Micro LED芯片的电学特性和发光效率。\n\n[0045]在本实施例中，为了改善Micro LED芯片的边缘效应，通过对发光单元的侧面进行去活化处理，以减少侧面的缺陷和悬空键，进而提高Micro LED芯片的发光效率。\n\n[0046]在一个实施例中，如图3所示，S13可以具体包括：\n\n[0047]S131：对发光单元的侧面进行预设时长的湿法腐蚀。\n\n[0048]其中，腐蚀液可以使用氢氟酸(HF)、硝酸(HNO3)等酸性腐蚀液，以及氢氧化钾(KOH)、氢氧化钠(NaOH)等碱性腐蚀液。\n\n[0049]具体地，在将发光单元放入腐蚀液中进行预设时长的湿法腐蚀时，既要保证能够减少发光单元侧面上的缺陷和悬空键，又要保证不会过度地腐蚀发光单元中的p型氮化镓层、量子阱层和n型氮化镓层。因此，要求选择具有一定的腐蚀强度的腐蚀液，以及控制腐蚀时长，例如，使用质量分数为30％的氢氧化钾水溶液，腐蚀时间1秒。\n\n[0050]在另一个实施例中，如图4所示，S13可以具体包括：\n\n[0051]S132：对发光单元的侧面进行退火处理，且退火温度不低于预设温度。\n\n[0052]例如，退火温度可以为500℃，时间为3～5分钟。\n\n[0053]具体地，将位于发光单元侧面上的材料加热至高于临界点的温度，以使发光单元侧面上的材料发生重结晶，如此，高温退火时，能够实现发光单元侧面上晶粒的粗化，进而能够减少侧面上的缺陷和悬空键。\n\n[0054]在又一个实施例中，如图5所示，S13可以具体包括：\n\n[0055]S133：在发光单元的侧面上覆盖一层钝化膜。\n\n[0056]其中，钝化膜的材质可以为氮化硅、二氧化硅，三氧化二铝等无机材料。例如，在发光单元的侧面上沉积一层氮化硅薄膜。\n\n[0057]具体地，在发光单元的侧面上覆盖一层钝化膜，能够修复发光单元侧面上的缺陷，并且钝化膜中的化学键可以与发光单元侧面上的悬空键结合，如此，以减少侧面上的缺陷和悬空键。\n\n[0058]值得注意的是，上述S131、S132和S133不仅可以单独实施，也可以组合实施，以减少发光单元侧面上的缺陷和悬空键，进而改善Micro LED芯片的边缘漏电和边缘非辐射复合现象，提高发光效率。并且，将S131、S132和S133中两种或三种方案作为组合实施时对Micro LED芯片边缘效应的改善效果，比S131、S132和S133中任一一种方案单独实施时对Micro LED芯片边缘效应的改善效果更佳。\n\n[0059]进一步地，当将S131、S132和S133中两种或三种方案作为组合实施时，S131、S132和S133的执行顺序为先S131再S132后S133，以更加有效地减少发光单元侧面上的缺陷和悬空键，进而改善Micro LED芯片的边缘漏电和边缘非辐射复合现象，提高发光效率。例如，S13可以具体包括依次执行的S131和S132，或者依次执行的S131和S133，或者依次执行的S132和S133，或者依次执行的S131、S132和S133。\n\n[0060]在一个具体实施例中，如图6所示，S12包括上述S121和S122，且S122具体为：通过干法刻蚀的方法，去掉预设区域的p型氮化镓层、量子阱层和n型氮化镓层，以形成多个小于预设尺寸的台面结构和位于相邻两个台面结构之间的切割沟道，其中，台面结构中n型氮化镓层的宽度大于台面结构中p型氮化镓层的宽度和台面结构中量子阱层的宽度，S13包括上述S131、S132和S133，并且在S13之后，还可以包括：\n\n[0061]S14：在台面结构的p型氮化镓层上制作第一电极，并在台面结构的n型氮化镓层上制作第二电极。\n\n[0062]例如，利用电子束蒸发的方法，在台面结构的p型氮化镓层上沉积铬或铝金属层以形成第一电极，并在台面结构的n型氮化镓层上沉积镍或银金属层以形成第二电极。\n\n[0063]S15：基于切割沟道对衬底基板进行切割，形成多个发光元件。\n\n[0064]例如，可以在对衬底基板进行切割前，先对衬底基板进行减薄处理，然后基于位于相邻两个台面结构之间的切割沟道对减薄后的衬底基板进行激光切割，以得到如图9所示的发光元件。\n\n[0065]区别于现有技术，本实施例提供的发光元件的制作方法，通过在衬底基板上制作小于预设尺寸的发光单元，并对发光单元的侧面进行去活化处理，能够减少侧面的缺陷和悬空键，进而改善小尺寸微发光二极体芯片的边缘漏电和边缘非辐射复合现象，以提高发光效率。\n\n[0066]请参阅图7，图7是本申请实施例提供的发光元件的结构示意图。如图7所示，该发光元件70包括衬底基板71、以及小于预设尺寸的发光单元72，其中，发光单元72设置于衬底基板71上，且发光单元72的侧面72A经过去活化处理。\n\n[0067]在本实施例中，发光元件70可以为Micro LED芯片，对应的发光单元72的尺寸通常小于50μm。与常规尺寸(1-10mm)的LED芯片相比，Micro LED芯片的尺寸变小，芯片的边缘效应凸显。因此，发光单元72由于其侧面72A存在缺陷和悬空键而导致的边缘漏电和非辐射复合现象会比较显著，严重影响的Micro LED芯片的发光效率。\n\n[0068]在本实施例中，为了改善Micro LED芯片的边缘效应，通过对发光单元72的侧面72A进行去活化处理，以减少侧面72A的缺陷和悬空键，进而提高Micro LED芯片的发光效率。\n\n[0069]具体地，对发光单元72的侧面72A进行去活化处理的方法，包括：对发光单元72的侧面72A进行预设时长的湿法腐蚀；对发光单元72的侧面72A进行高温退火处理；以及在发光单元72的侧面72A上覆盖一层钝化膜等。其中，上述各种去活化处理的方法的具体实施可以参见前面的实施例，在此不再赘述。\n\n[0070]在一个实施例中，继续参阅图7，发光单元72为台面结构，台面结构72包括依次远离衬底基板71的n型氮化镓层721、量子阱层722和p型氮化镓层723，且n型氮化镓层721的宽度大于量子阱层722的宽度和p型氮化镓层723的宽度，如此，使得位于p型氮化镓层723下方的n型氮化镓层721的局部区域暴露出来，以便于发光元件70的后续制程，例如制作电极等。其中，衬底基板71的材质可以为蓝宝石、碳化硅、硅、砷化镓、氧化锌等。量子阱层722可以包括交替生长的InGaN阱层和GaN垒层，交替周期可以控制在7～15个。\n\n[0071]进一步地，请参阅图8，发光元件70还可以包括第一电极73和第二电极74，其中，第一电极73位于p型氮化镓层723上，第二电极74位于n型氮化镓层721上。其中，第一电极73可以为铬或铝金属层，第二电极74可以为镍或银金属层。\n\n[0072]在一个具体实施例中，请参阅图9，发光元件70还包括钝化膜75，钝化膜75覆盖侧面72A。其中，钝化膜75的材质可以为氮化硅、二氧化硅，三氧化二铝等无机材料。\n\n[0073]具体地，在发光单元72的侧面72A上形成钝化膜75之前，可以对发光单元72的侧面72A进行湿法腐蚀或者高温退火处理，或者，先对发光单元72的侧面72A进行湿法腐蚀，再对发光单元72的侧面72A进行高温退火处理，如此，以更加有效地减少发光单元侧面72A上的缺陷和悬空键，进而改善Micro LED芯片的边缘漏电和边缘非辐射复合现象，提高发光效率。\n\n[0074]区别于现有技术，本实施例提供的发光元件，通过在衬底基板上制作小于预设尺寸的发光单元，并对发光单元的侧面进行去活化处理，能够减少侧面的缺陷和悬空键，进而改善小尺寸微发光二极体芯片的边缘漏电和边缘非辐射复合现象，以提高发光效率\n\n[0075]请参阅图10，图10是本申请实施例提供的阵列基板的结构示意图。如图10所示，该阵列基板90包括发光元件91、以及与发光元件91电连接的控制电路。\n\n[0076]具体地，发光元件91包括衬底基板、以及小于预设尺寸的发光单元，其中，发光单元设置于衬底基板上，且发光单元的侧面经过去活化处理。\n\n[0077]区别于现有技术，本实施例提供的阵列基板，通过在衬底基板上制作小于预设尺寸的发光单元，并对发光单元的侧面进行去活化处理，能够减少侧面的缺陷和悬空键，进而改善小尺寸微发光二极体芯片的边缘漏电和边缘非辐射复合现象，以提高发光效率。\n\n[0078]以上所述仅为本申请的较佳实施例而已，并不用以限制本申请，凡在本申请的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本申请的保护范围之内。', '【技术领域】\n\n[0001]本申请涉及显示技术领域，具体涉及一种发光元件及其制作方法、阵列基板。\n\n【背景技术】\n\n[0002]微发光二极体显示器(Micro LED Display)为新一代的显示技术，结构是微型化LED阵列，也就是将LED结构设计进行薄膜化、微小化与阵列化，使其体积约为目前主流LED大小的1％，每一个像素都能定址、单独驱动发光，将像素点的距离由原本的毫米级降到微米级。微发光二极体显示器承继了LED的特性，具有低功耗、高亮度、超高分辨率与色彩饱和度、反应速度快、超省电、寿命较长、效率较高等优点。\n\n[0003]但是，在微发光二极体显示器技术中，由于芯片尺寸变小，而小尺寸微发光二极体芯片的边缘漏电和边缘非辐射复合现象比较显著，故会导致微发光二极体芯片的发光效率明显下降。\n\n【发明内容】\n\n[0004]本申请的目的在于提供一种发光元件及其制作方法、阵列基板，以改善小尺寸微发光二极体芯片的边缘漏电和边缘非辐射复合现象，进而提高发光效率。\n\n[0005]为了解决上述问题，本申请实施例提供了一种发光元件的制作方法，该发光元件的制作方法包括：提供衬底基板；在衬底基板上制作小于预设尺寸的发光单元；对发光单元的侧面进行去活化处理。\n\n[0006]其中，对发光单元的侧面进行去活化处理的步骤，具体包括：对发光单元的侧面进行预设时长的湿法腐蚀。\n\n[0007]其中，对发光单元的侧面进行去活化处理的步骤，具体包括：对发光单元的侧面进行退火处理，且退火温度不低于预设温度。\n\n[0008]其中，对发光单元的侧面进行去活化处理的步骤，具体包括：在发光单元的侧面上覆盖一层钝化膜。\n\n[0009]其中，在衬底基板上制作小于预设尺寸的发光单元的步骤，具体包括：在衬底基板上，依次形成n型氮化镓层、量子阱层和p型氮化镓层；对p型氮化镓层、量子阱层和n型氮化镓层进行刻蚀，以形成至少一个小于预设尺寸的发光单元。\n\n[0010]其中，对p型氮化镓层、量子阱层和n型氮化镓层进行刻蚀，以形成至少一个小于预设尺寸的发光单元的步骤，具体包括：通过干法刻蚀，去掉预设区域的p型氮化镓层、量子阱层和n型氮化镓层，以形成多个小于预设尺寸的台面结构和位于相邻两个台面结构之间的切割沟道，其中，台面结构中n型氮化镓层的宽度大于台面结构中p型氮化镓层的宽度和台面结构中量子阱层的宽度；在对发光单元的侧面进行去活化处理的步骤之后，还包括：在台面结构的p型氮化镓层上制作第一电极，并在台面结构的n型氮化镓层上制作第二电极；基于切割沟道对衬底基板进行切割，形成多个发光元件。\n\n[0011]为了解决上述问题，本申请实施例还提供了一种发光元件，该发光元件，包括：衬底基板；小于预设尺寸的发光单元，发光单元设置于衬底基板上，且发光单元的侧面经过去活化处理。\n\n[0012]其中，发光元件还包括钝化膜，钝化膜覆盖侧面。\n\n[0013]其中，发光单元为台面结构，台面结构包括依次远离衬底基板的n型氮化镓层、量子阱层和p型氮化镓层，且n型氮化镓层的宽度大于量子阱层的宽度和p型氮化镓层的宽度；发光元件还包括：第一电极，第一电极位于p型氮化镓层上；第二电极，第二电极位于n型氮化镓层上。\n\n[0014]为了解决上述问题，本申请实施例还提供了一种阵列基板，该阵列基板包括上述任一项发光元件、以及与发光元件电连接的控制电路。\n\n[0015]本申请的有益效果是：区别于现有技术，本申请提供的发光元件的制作方法，通过在衬底基板上制作小于预设尺寸的发光单元，并对发光单元的侧面进行去活化处理，能够减少侧面的缺陷和悬空键，进而改善小尺寸微发光二极体芯片的边缘漏电和边缘非辐射复合现象，以提高发光效率。\n\n【附图说明】\n\n[0016]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0017]图1是本申请实施例提供的发光元件的制作方法的流程示意图；\n\n[0018]图2是图1中S12的流程示意图；\n\n[0019]图3是本申请实施例提供的发光元件的制作方法的另一流程示意图；\n\n[0020]图4是本申请实施例提供的发光元件的制作方法的另一流程示意图；\n\n[0021]图5是本申请实施例提供的发光元件的制作方法的另一流程示意图；\n\n[0022]图6是本申请实施例提供的发光元件的制作方法的另一流程示意图；\n\n[0023]图7是本申请实施例提供的发光元件的结构示意图；\n\n[0024]图8是本申请实施例提供的发光元件的另一结构示意图；\n\n[0025]图9是本申请实施例提供的发光元件的另一结构示意图；\n\n[0026]图10是本申请实施例提供的阵列基板的结构示意图。\n\n【具体实施方式】\n\n[0027]下面结合附图和实施例，对本申请作进一步的详细描述。特别指出的是，以下实施例仅用于说明本申请，但不对本申请的范围进行限定。同样的，以下实施例仅为本申请的部分实施例而非全部实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其它实施例，都属于本申请保护的范围。\n\n[0028]目前，在微发光二极体显示器技术中，由于芯片尺寸变小，而小尺寸微发光二极体芯片的边缘漏电和边缘非辐射复合现象比较显著，故会导致微发光二极体芯片的发光效率明显下降。为了解决上述技术问题，本申请采用的技术方案是提供一种发光元件的制作方法，以改善小尺寸微发光二极体芯片的边缘漏电和边缘非辐射复合现象，提高发光效率。\n\n[0029]请参阅图1，图1是本申请实施例提供的发光元件的制作方法的流程示意图，该发光元件的制作方法具体流程可以如下：\n\n[0030]S11：提供衬底基板。\n\n[0031]其中，衬底基板的材质可以为蓝宝石、碳化硅、硅、砷化镓、氧化锌等。\n\n[0032]S12：在衬底基板上制作小于预设尺寸的发光单元。\n\n[0033]例如，在衬底基板上制作尺寸在100微米以下的发光单元。\n\n[0034]在一个实施例中，如图2所示，S12可以具体包括：\n\n[0035]S121：在衬底基板上，依次形成n型氮化镓层、量子阱层和p型氮化镓层。\n\n[0036]例如，采用金属有机物化学气相沉积(MOCVD)的方法，先在蓝宝石衬底上外延生长得到氮化镓过渡层，然后在氮化镓过渡层上依次外延生长得到n型氮化镓层、量子阱层和p型氮化镓层。\n\n[0037]其中，量子阱层可以包括交替生长的InGaN阱层和GaN垒层，交替周期可以控制在7-15个。\n\n[0038]S122：对p型氮化镓层、量子阱层和n型氮化镓层进行刻蚀，以形成至少一个小于预设尺寸的发光单元。\n\n[0039]例如，沿p型氮化镓层至n型氮化镓层的方向，对p型氮化镓层、量子阱层和n型氮化镓层进行光刻、干法刻蚀以及清洗去胶，以得到至少一个尺寸小于100μm的发光单元，其中，发光单元中n型氮化镓层的宽度等于或大于发光单元中p型氮化镓层的宽度。\n\n[0040]在一个具体实施例中，S122可以具体包括：\n\n[0041]通过干法刻蚀的方法，去掉预设区域的p型氮化镓层、量子阱层和n型氮化镓层，以形成多个小于预设尺寸的台面结构和位于相邻两个台面结构之间的切割沟道，其中，台面结构中n型氮化镓层的宽度大于台面结构中p型氮化镓层的宽度和台面结构中量子阱层的宽度，使得位于p型氮化镓层下方的n型氮化镓层的局部区域暴露出来，以便于发光元件的后续制程，例如制作电极等。\n\n[0042]S13：对发光单元的侧面进行去活化处理。\n\n[0043]具体地，在将上述p型氮化镓层、量子阱层和n型氮化镓层分隔成至少一个小于预设尺寸的发光单元的过程中，发光单元的侧面会产生悬空键和缺陷。\n\n[0044]在本实施例中，发光元件可以为Micro LED芯片，对应的发光单元的尺寸通常小于50μm。与常规尺寸(1-10mm)的LED芯片相比，Micro LED芯片的尺寸变小，芯片的边缘效应凸显。因此，发光单元由于其侧面存在缺陷和悬空键而导致的边缘漏电和非辐射复合现象会比较显著，进而严重影响的Micro LED芯片的电学特性和发光效率。\n\n[0045]在本实施例中，为了改善Micro LED芯片的边缘效应，通过对发光单元的侧面进行去活化处理，以减少侧面的缺陷和悬空键，进而提高Micro LED芯片的发光效率。\n\n[0046]在一个实施例中，如图3所示，S13可以具体包括：\n\n[0047]S131：对发光单元的侧面进行预设时长的湿法腐蚀。\n\n[0048]其中，腐蚀液可以使用氢氟酸(HF)、硝酸(HNO3)等酸性腐蚀液，以及氢氧化钾(KOH)、氢氧化钠(NaOH)等碱性腐蚀液。\n\n[0049]具体地，在将发光单元放入腐蚀液中进行预设时长的湿法腐蚀时，既要保证能够减少发光单元侧面上的缺陷和悬空键，又要保证不会过度地腐蚀发光单元中的p型氮化镓层、量子阱层和n型氮化镓层。因此，要求选择具有一定的腐蚀强度的腐蚀液，以及控制腐蚀时长，例如，使用质量分数为30％的氢氧化钾水溶液，腐蚀时间1秒。\n\n[0050]在另一个实施例中，如图4所示，S13可以具体包括：\n\n[0051]S132：对发光单元的侧面进行退火处理，且退火温度不低于预设温度。\n\n[0052]例如，退火温度可以为500℃，时间为3～5分钟。\n\n[0053]具体地，将位于发光单元侧面上的材料加热至高于临界点的温度，以使发光单元侧面上的材料发生重结晶，如此，高温退火时，能够实现发光单元侧面上晶粒的粗化，进而能够减少侧面上的缺陷和悬空键。\n\n[0054]在又一个实施例中，如图5所示，S13可以具体包括：\n\n[0055]S133：在发光单元的侧面上覆盖一层钝化膜。\n\n[0056]其中，钝化膜的材质可以为氮化硅、二氧化硅，三氧化二铝等无机材料。例如，在发光单元的侧面上沉积一层氮化硅薄膜。\n\n[0057]具体地，在发光单元的侧面上覆盖一层钝化膜，能够修复发光单元侧面上的缺陷，并且钝化膜中的化学键可以与发光单元侧面上的悬空键结合，如此，以减少侧面上的缺陷和悬空键。\n\n[0058]值得注意的是，上述S131、S132和S133不仅可以单独实施，也可以组合实施，以减少发光单元侧面上的缺陷和悬空键，进而改善Micro LED芯片的边缘漏电和边缘非辐射复合现象，提高发光效率。并且，将S131、S132和S133中两种或三种方案作为组合实施时对Micro LED芯片边缘效应的改善效果，比S131、S132和S133中任一一种方案单独实施时对Micro LED芯片边缘效应的改善效果更佳。\n\n[0059]进一步地，当将S131、S132和S133中两种或三种方案作为组合实施时，S131、S132和S133的执行顺序为先S131再S132后S133，以更加有效地减少发光单元侧面上的缺陷和悬空键，进而改善Micro LED芯片的边缘漏电和边缘非辐射复合现象，提高发光效率。例如，S13可以具体包括依次执行的S131和S132，或者依次执行的S131和S133，或者依次执行的S132和S133，或者依次执行的S131、S132和S133。\n\n[0060]在一个具体实施例中，如图6所示，S12包括上述S121和S122，且S122具体为：通过干法刻蚀的方法，去掉预设区域的p型氮化镓层、量子阱层和n型氮化镓层，以形成多个小于预设尺寸的台面结构和位于相邻两个台面结构之间的切割沟道，其中，台面结构中n型氮化镓层的宽度大于台面结构中p型氮化镓层的宽度和台面结构中量子阱层的宽度，S13包括上述S131、S132和S133，并且在S13之后，还可以包括：\n\n[0061]S14：在台面结构的p型氮化镓层上制作第一电极，并在台面结构的n型氮化镓层上制作第二电极。\n\n[0062]例如，利用电子束蒸发的方法，在台面结构的p型氮化镓层上沉积铬或铝金属层以形成第一电极，并在台面结构的n型氮化镓层上沉积镍或银金属层以形成第二电极。\n\n[0063]S15：基于切割沟道对衬底基板进行切割，形成多个发光元件。\n\n[0064]例如，可以在对衬底基板进行切割前，先对衬底基板进行减薄处理，然后基于位于相邻两个台面结构之间的切割沟道对减薄后的衬底基板进行激光切割，以得到如图9所示的发光元件。\n\n[0065]区别于现有技术，本实施例提供的发光元件的制作方法，通过在衬底基板上制作小于预设尺寸的发光单元，并对发光单元的侧面进行去活化处理，能够减少侧面的缺陷和悬空键，进而改善小尺寸微发光二极体芯片的边缘漏电和边缘非辐射复合现象，以提高发光效率。\n\n[0066]请参阅图7，图7是本申请实施例提供的发光元件的结构示意图。如图7所示，该发光元件70包括衬底基板71、以及小于预设尺寸的发光单元72，其中，发光单元72设置于衬底基板71上，且发光单元72的侧面72A经过去活化处理。\n\n[0067]在本实施例中，发光元件70可以为Micro LED芯片，对应的发光单元72的尺寸通常小于50μm。与常规尺寸(1-10mm)的LED芯片相比，Micro LED芯片的尺寸变小，芯片的边缘效应凸显。因此，发光单元72由于其侧面72A存在缺陷和悬空键而导致的边缘漏电和非辐射复合现象会比较显著，严重影响的Micro LED芯片的发光效率。\n\n[0068]在本实施例中，为了改善Micro LED芯片的边缘效应，通过对发光单元72的侧面72A进行去活化处理，以减少侧面72A的缺陷和悬空键，进而提高Micro LED芯片的发光效率。\n\n[0069]具体地，对发光单元72的侧面72A进行去活化处理的方法，包括：对发光单元72的侧面72A进行预设时长的湿法腐蚀；对发光单元72的侧面72A进行高温退火处理；以及在发光单元72的侧面72A上覆盖一层钝化膜等。其中，上述各种去活化处理的方法的具体实施可以参见前面的实施例，在此不再赘述。\n\n[0070]在一个实施例中，继续参阅图7，发光单元72为台面结构，台面结构72包括依次远离衬底基板71的n型氮化镓层721、量子阱层722和p型氮化镓层723，且n型氮化镓层721的宽度大于量子阱层722的宽度和p型氮化镓层723的宽度，如此，使得位于p型氮化镓层723下方的n型氮化镓层721的局部区域暴露出来，以便于发光元件70的后续制程，例如制作电极等。其中，衬底基板71的材质可以为蓝宝石、碳化硅、硅、砷化镓、氧化锌等。量子阱层722可以包括交替生长的InGaN阱层和GaN垒层，交替周期可以控制在7～15个。\n\n[0071]进一步地，请参阅图8，发光元件70还可以包括第一电极73和第二电极74，其中，第一电极73位于p型氮化镓层723上，第二电极74位于n型氮化镓层721上。其中，第一电极73可以为铬或铝金属层，第二电极74可以为镍或银金属层。\n\n[0072]在一个具体实施例中，请参阅图9，发光元件70还包括钝化膜75，钝化膜75覆盖侧面72A。其中，钝化膜75的材质可以为氮化硅、二氧化硅，三氧化二铝等无机材料。\n\n[0073]具体地，在发光单元72的侧面72A上形成钝化膜75之前，可以对发光单元72的侧面72A进行湿法腐蚀或者高温退火处理，或者，先对发光单元72的侧面72A进行湿法腐蚀，再对发光单元72的侧面72A进行高温退火处理，如此，以更加有效地减少发光单元侧面72A上的缺陷和悬空键，进而改善Micro LED芯片的边缘漏电和边缘非辐射复合现象，提高发光效率。\n\n[0074]区别于现有技术，本实施例提供的发光元件，通过在衬底基板上制作小于预设尺寸的发光单元，并对发光单元的侧面进行去活化处理，能够减少侧面的缺陷和悬空键，进而改善小尺寸微发光二极体芯片的边缘漏电和边缘非辐射复合现象，以提高发光效率\n\n[0075]请参阅图10，图10是本申请实施例提供的阵列基板的结构示意图。如图10所示，该阵列基板90包括发光元件91、以及与发光元件91电连接的控制电路。\n\n[0076]具体地，发光元件91包括衬底基板、以及小于预设尺寸的发光单元，其中，发光单元设置于衬底基板上，且发光单元的侧面经过去活化处理。\n\n[0077]区别于现有技术，本实施例提供的阵列基板，通过在衬底基板上制作小于预设尺寸的发光单元，并对发光单元的侧面进行去活化处理，能够减少侧面的缺陷和悬空键，进而改善小尺寸微发光二极体芯片的边缘漏电和边缘非辐射复合现象，以提高发光效率。\n\n[0078]以上所述仅为本申请的较佳实施例而已，并不用以限制本申请，凡在本申请的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本申请的保护范围之内。');
INSERT INTO `os_patent_instruction_text` VALUES (10662, 23716, '技术领域\n\n[0001]本申请涉及显示技术领域，特别是涉及一种显示面板及显示装置。\n\n背景技术\n\n[0002]微发光二极管(micro LED)显示器具有低功率消耗、高色彩饱和度和高反应速度等优点，使得微发光二极管显示器被视为下一代主流显示器产品的热门技术之一。传传的微发光二极管显示器通过调整提供给像素电路的电流，来控制像素电路中的微发光二极管产生的光线的亮度。因其微发光二极管的灰阶电压不易设定，且二极管的驱动电压太低，流过二极管的驱动电流过大，容易造成二极管的发光亮度过亮等问题。\n\n发明内容\n\n[0003]本申请提供一种显示面板及显示装置，能够解决现有技术中发光二极管发光亮度过亮等问题。\n\n[0004]为解决上述技术问题，本申请采用的一个技术方案是：提供一种显示面板，其特征在于，所述显示面板包括：多个像素单元，所述多个像素单元阵列排布；多条扫描线，每一所述扫描线耦接所述多个像素单元中的一行像素单元，用于输出扫描信号至所述像素单元；多条数据线，每一所述数据线耦接所述多个像素单元中的一列像素单元，用于输出数据信号至所述像素单元；多条脉冲宽度调制信号线，每一所述脉冲宽度调制信号线耦接所述多个像素单元中的一行像素单元，用于输出脉冲宽度调制信号至所述像素单元并控制所述像素单元的发光时间以实现显示不同灰阶。\n\n[0005]其中，每一所述像素单元的发光时间和所述像素单元的亮度值相关。\n\n[0006]其中，每一所述像素单元至少包括：发光元件，所述发光元件的一端连接公共电压，用于为所述像素单元提供光线；驱动开关管，所述驱动开关管的第一端连接电源电压，所述驱动开关管的第二端连接所述发光元件，用于驱动所述发光元件发光；第一开关管，所述第一开关管的第一端连接所述驱动开关管的控制端，所述第一开关管的控制端连接所述脉冲宽度调制信号线；第二开关管，所述第二开关管的第一端连接所述第一开关管的第一端，所述第二开关管的第二端连接所述数据线，所述第二开关管的控制端连接所述扫描线；存储电容，所述存储电容的第一端连接所述第一开关管的第一端，所述存储电容的第二端连接所述公共电压。\n\n[0007]其中，所述脉冲宽度调制信号线输出脉冲调制信号至所述第一开关管的时间晚于所述扫描线输出扫描信号至所述第二开关管的时间。\n\n[0008]其中，所述发光元件为微发光二极管。\n\n[0009]其中，所述第一开关管、第二开关管及所述驱动开关管为薄膜场效应晶体管。\n\n[0010]为解决上述技术问题，本申请采用的又一个技术方案是：提供一种显示装置，所述显示装置包括上述所述的显示面板，以及；扫描驱动电路，耦接所述多条扫描线，用以为所述多个像素单元提供扫描信号；数据驱动电路，耦接所述多条数据线，用以为所述多个像素单元提供数据信号；脉冲宽度调制电路，耦接所述脉冲宽度调制信号线，用以提供脉冲调制信号至所述像素单元，以控制所述像素单元的发光时间从而实现所述显示装置显示不同灰阶。\n\n[0011]其中，每一所述像素单元的发光时间和所述像素单元的亮度值相关。\n\n[0012]其中，每一所述像素单元至少包括：发光元件，所述发光元件的一端连接公共电压，用于为所述像素单元提供光线；驱动开关管，所述驱动开关管的第一端连接电源电压，所述驱动开关管的第二端连接所述发光元件，用于驱动所述发光元件发光；第一开关管，所述第一开关管的第一端连接所述驱动开关管的控制端，所述第一开关管的控制端连接所述脉冲宽度调制信号线；第二开关管，所述第二开关管的第一端连接所述第一开关管的第一端，所述第二开关管的第二端连接所述数据线，所述第二开关管的控制端连接所述扫描线；存储电容，所述存储电容的第一端连接所述第一开关管的第一端，所述存储电容的第二端连接所述公共电压。\n\n[0013]其中，所述脉冲宽度调制信号线输出脉冲调制信号至所述第一开关管的时间晚于所述扫描线输出扫描信号至所述第二开关管的时间。\n\n[0014]本申请的有益效果是：提供一种显示面板及显示装置，通过通过利用脉冲宽度调制信号来调整像素单元的发光时长，能够达到低亮度驱动显示，避免经过发光元件电流过大而造成其亮度过亮的情况发生。\n\n附图说明\n\n[0015]为了更清楚地说明本申请的方案，下面将对实施例描述中所需要使用的附图作一个简单介绍，显而易见地，下面描述中的附图是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0016]图1是本申请显示面板一实施方式的结构示意图；\n\n[0017]图2是本申请像素单元一实施方式的结构示意图；\n\n[0018]图3是本申请像素单元一实施方式的工作的波形时序图；\n\n[0019]图4是本申请显示装置一实施方式的结构示意图。\n\n具体实施方式\n\n[0020]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本申请的一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0021]除非另有定义，本文所使用的所有的技术和科学术语与属于本申请技术领域的技术人员通常理解的含义相同；本文中在申请的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本申请；本申请的说明书和权利要求书及上述附图说明中的术语“包括”和“具有”以及它们的任何变形，意图在于覆盖不排他的包含。本申请的说明书和权利要求书或上述附图中的术语“第一”、“第二”等是用于区别不同对象，而不是用于描述特定顺序。\n\n[0022]在本文中提及“实施例”意味着，结合实施例描述的特定特征、结构或特性可以包含在本申请的至少一个实施例中。在说明书中的各个位置出现该短语并不一定均是指相同的实施例，也不是与其它实施例互斥的独立的或备选的实施例。本领域技术人员显式地和隐式地理解的是，本文所描述的实施例可以与其它实施例相结合。\n\n[0023]请参阅图1，图1为本申请显示面板一实施方式的结构示意图，如图1所示本申请中提供的显示面板100包括多个像素单元110、多条扫描线120(G1、G2...Gn)、多条数据线130(D1、D2...Dn)以及多条脉冲宽度调制信号线140(G1-P、G2-P...Gn-P)。\n\n[0024]其中，每一所述的扫描线120耦接多个像素单元中的一行像素单元110，用于输出扫描信号至像素单元110。每一所述数据线130耦接多个像素单元中的一列像素单元110，用于输出数据信号至像素单元110。\n\n[0025]可选地，每一脉冲宽度调制信号线140耦接多个像素单元中的一行像素单元110，用于输出脉冲宽度调制信号至像素单元110并控制该像素单元110的发光时间以实现显示不同灰阶。\n\n[0026]本申请中采用脉冲宽度调制(Pulse Width Modulation， PWM)来控制像素单元的发光时间，从而实现低亮度驱动，避免发光元件亮度过亮的问题。\n\n[0027]请进一步结合图2，图2为本申请像素单元一实施方式方式的结构示意图，参阅图2，本申请的像素单元110至少包括发光元件111、驱动开关管T、第一开关管T1、第二开关管T2以及存储电容C。\n\n[0028]其中，发光元件111的一端连接公共电压Vss，用于为像素单元110提供光线，且该公共电压Vss可以为接地电压。本实施例中的发光元件111可以为微发光二极管(microLED)，在其它实施方式中还可以是有机发光二极管(OLED)或者发光二极管，此处不做具体限定。\n\n[0029]驱动开关管T，该驱动开关管T的第一端连接电源电压Vdd，该驱动开关管T的第二端连接发光元件111，用于驱动发光元件111发光。且一般来说，该电源电压Vdd的值大于公共电压Vss的电压值。\n\n[0030]第一开关管T1，该第一开关管T1的第一端连接驱动开关管T的控制端，第一开关管T1的控制端连接脉冲宽度调制信号线140。\n\n[0031]第二开关管T2，该第二开关管T2的第一端连接第一开关管T1的第一端，第二开关管T2的第二端连接数据线130，第二开关管T2的控制端连接扫描线120。\n\n[0032]存储电容C，该存储电容C的第一端连接第一开关管T1的第一端，该存储电容C的第二端连接公共电压Vss。\n\n[0033]可选地，上述驱动开关管T、第一开关管T1以及第二开关管T2可以为薄膜场效应晶体管，也可以为其他可以实现开关功能的电子器件，本发明不做具体限定。且本发明中涉及到开关管的第一端可以为开关管的漏极、第二端可以为开关管的源极，在具体实施例中，开关管的源极和漏极可以互换，此处也不做具体限定。\n\n[0034]一并结合图3，图3为本申请像素单元一实施方式的工作的波形时序图。如图3，简单来说本申请中像素单元110的驱动过程可以包括像素初始化、阈值产生、数据写入以及发光写入四个阶段。本申请主要介绍数据写入以及发光写入阶段，具体如下：\n\n[0035]在数据写入阶段，扫描线120和脉冲宽度调制信号线140不同时输出信号，即本申请中脉冲宽度调制信号线140输出脉冲调制信号至第一开关管T1控制端的时间晚于扫描线120输出扫描信号至第二开关管T2控制端的时间。也即是本申请通过延迟脉冲宽度调制信号的输出来控制像素单元110中发光元件111的发光时长，从而实现显示不同的灰阶。\n\n[0036]可选地，本申请中像素单元110中发光元件111的发光时间和像素单元110的亮度值相关。可以理解的是，脉冲宽度调制信号在一帧里面的开启时长，即相对于扫描信号的延迟时间由像素单元需要多少亮度值决定。\n\n[0037]可选地，只有脉冲宽度调制信号输出至第一开关管T1处，第一开关管T1导通，电源电压Vdd给发光元件111电流，从而使得发光元件111发光。其中，发光元件111的发光时间(脉冲宽度调制信号的输出时间)则和像素单元所需要的亮度值相关，而亮度值则由显示面板100点gamma曲线来决定。举例来说，显示面板呈现256灰阶，每个灰阶有对应的亮度数值，例如G255＝100nits，G32＝1nits，其中，G代表灰阶，G255代表255灰阶。在本申请一具体应用场景中，以显示面板的驱动频率为60Hz为例，若像素单元110的所要显示的灰阶为G255，则脉冲宽度调制信号的开启时间为16ms(第一晶体管T1点开启时间，也即是发光元件111的发光时间)，同理对于G32，其亮度值为G255的百分之一，其对应的脉冲宽度调制信号的开启时间可以为0.16ms。也就是说，知道每一像素单元110所需要点亮度值就可以知道脉冲宽度调制信号的开启时间，从而可以知道发光元件111的发光时间。\n\n[0038]可选地，每一灰阶需要多少亮度可以预先设置好，具体可以参照gamma2.2亮度和时间的设定，如下：\n\n[0039]表1 gamma2.2亮度与时间的设定参考表\n\n[0040]\n\n[0041]可以理解的是，对于显示面板100中的每一行所述像素单元110，其脉冲宽度调制信号的开启时间均需要做延迟，且其延迟的时间长度和该行像素单元所需的亮度值相关，详见上述实施方式的具体描述，此处不再赘述。\n\n[0042]本申请中通过将脉冲宽度调制信号线输出脉冲调制信号至第一开关管控制端的时间设置为晚于扫描线输出扫描信号至第二开关管控制端的时间，即延迟脉冲宽度调制信号的打开时间，能够调整像素单元的发光时长，从而达到低亮度驱动，避免经过发光元件电流过大而造成其亮度过亮。\n\n[0043]上述实施方式中，通过利用脉冲宽度调制信号来调整像素单元的发光时长，能够达到低亮度驱动，避免经过发光元件电流过大而造成其亮度过亮的情况发生。\n\n[0044]参阅图4，图4为本申请显示装置一实施方式的结构示意图，如图4，本申请中的显示装置200包括显示面板F、扫描驱动电路210、数据驱动电路220以及脉冲宽度调制电路230。\n\n[0045]其中，显示面板F进一步包括多个像素单元110、多条扫描线120、多条数据线130以及多条脉冲宽度调制信号线140，其中像素单元110、扫描线120、数据线130以及脉冲宽度调制信号线140的具体作用和连接关系参见上述实施方式中的具体描述，此处不再赘述。\n\n[0046]可选地，像素单元110至少包括发光元件111、驱动开关管T、第一开关管T1、第二开关管T2以及存储电容C。\n\n[0047]其中，其中，发光元件111的一端连接公共电压Vss，用于为像素单元110提供光线，且该公共电压Vss可以为接地电压。本实施例中的发光元件111可以为微发光二极管(microLED)，在其它实施方式中还可以是有机发光二极管(OLED)或者发光二极管，此处不做具体限定。\n\n[0048]驱动开关管T，该驱动开关管T的第一端连接电源电压Vdd，该驱动开关管T的第二端连接发光元件111，用于驱动发光元件111发光。且一般来说，该电源电压Vdd的值大于公共电压Vss的电压值。\n\n[0049]第一开关管T1，该第一开关管T1的第一端连接驱动开关管T的控制端，第一开关管T1的控制端连接脉冲宽度调制信号线140。\n\n[0050]第二开关管T2，该第二开关管T2的第一端连接第一开关管T1的第一端，第二开关管T2的第二端连接数据线130，第二开关管T2的控制端连接扫描线120。\n\n[0051]存储电容C，该存储电容C的第一端连接第一开关管T1的第一端，该存储电容C的第二端连接公共电压Vss。\n\n[0052]可选地，扫描驱动电路210耦接多条扫描线120，用以为多个像素单元110提供扫描信号。\n\n[0053]数据驱动电路220耦接多条数信号据线130，用以为多个像素单元提供数据信号。\n\n[0054]脉冲宽度调制电路230耦接脉冲宽度调制信号线140，用以提供脉冲调制信号至像素单元110，以控制像素单元110的发光时间从而实现显示装置200显示不同灰阶。\n\n[0055]其中，每一像素单元110的发光时间和像素单元110的亮度值相关。且脉冲宽度调制信号线140输出脉冲调制信号至第一开关管T1的时间晚于扫描线120输出扫描信号至第二开关管T2的时间。且本申请电路的具体实现原理参见上文显示面板实施方式中的具体描述，此处不再赘述。\n\n[0056]上述实施方式中，通过利用脉冲宽度调制信号来调整像素单元的发光时长，能够达到低亮度驱动，避免经过发光元件电流过大而造成其亮度过亮的情况发生。\n\n[0057]综上所述，本领域技术人员容易理解，本申请提供一种显示面板及显示装置，通过利用脉冲宽度调制信号来调整像素单元的发光时长，能够达到低亮度驱动，避免经过发光元件电流过大而造成其亮度过亮的情况发生。\n\n[0058]以上所述仅为本申请的实施方式，并非因此限制本申请的专利范围，凡是利用本申请说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本申请的专利保护范围内。', '技术领域\n\n[0001]本申请涉及显示技术领域，特别是涉及一种显示面板及显示装置。\n\n背景技术\n\n[0002]微发光二极管(micro LED)显示器具有低功率消耗、高色彩饱和度和高反应速度等优点，使得微发光二极管显示器被视为下一代主流显示器产品的热门技术之一。传传的微发光二极管显示器通过调整提供给像素电路的电流，来控制像素电路中的微发光二极管产生的光线的亮度。因其微发光二极管的灰阶电压不易设定，且二极管的驱动电压太低，流过二极管的驱动电流过大，容易造成二极管的发光亮度过亮等问题。\n\n发明内容\n\n[0003]本申请提供一种显示面板及显示装置，能够解决现有技术中发光二极管发光亮度过亮等问题。\n\n[0004]为解决上述技术问题，本申请采用的一个技术方案是：提供一种显示面板，其特征在于，所述显示面板包括：多个像素单元，所述多个像素单元阵列排布；多条扫描线，每一所述扫描线耦接所述多个像素单元中的一行像素单元，用于输出扫描信号至所述像素单元；多条数据线，每一所述数据线耦接所述多个像素单元中的一列像素单元，用于输出数据信号至所述像素单元；多条脉冲宽度调制信号线，每一所述脉冲宽度调制信号线耦接所述多个像素单元中的一行像素单元，用于输出脉冲宽度调制信号至所述像素单元并控制所述像素单元的发光时间以实现显示不同灰阶。\n\n[0005]其中，每一所述像素单元的发光时间和所述像素单元的亮度值相关。\n\n[0006]其中，每一所述像素单元至少包括：发光元件，所述发光元件的一端连接公共电压，用于为所述像素单元提供光线；驱动开关管，所述驱动开关管的第一端连接电源电压，所述驱动开关管的第二端连接所述发光元件，用于驱动所述发光元件发光；第一开关管，所述第一开关管的第一端连接所述驱动开关管的控制端，所述第一开关管的控制端连接所述脉冲宽度调制信号线；第二开关管，所述第二开关管的第一端连接所述第一开关管的第一端，所述第二开关管的第二端连接所述数据线，所述第二开关管的控制端连接所述扫描线；存储电容，所述存储电容的第一端连接所述第一开关管的第一端，所述存储电容的第二端连接所述公共电压。\n\n[0007]其中，所述脉冲宽度调制信号线输出脉冲调制信号至所述第一开关管的时间晚于所述扫描线输出扫描信号至所述第二开关管的时间。\n\n[0008]其中，所述发光元件为微发光二极管。\n\n[0009]其中，所述第一开关管、第二开关管及所述驱动开关管为薄膜场效应晶体管。\n\n[0010]为解决上述技术问题，本申请采用的又一个技术方案是：提供一种显示装置，所述显示装置包括上述所述的显示面板，以及；扫描驱动电路，耦接所述多条扫描线，用以为所述多个像素单元提供扫描信号；数据驱动电路，耦接所述多条数据线，用以为所述多个像素单元提供数据信号；脉冲宽度调制电路，耦接所述脉冲宽度调制信号线，用以提供脉冲调制信号至所述像素单元，以控制所述像素单元的发光时间从而实现所述显示装置显示不同灰阶。\n\n[0011]其中，每一所述像素单元的发光时间和所述像素单元的亮度值相关。\n\n[0012]其中，每一所述像素单元至少包括：发光元件，所述发光元件的一端连接公共电压，用于为所述像素单元提供光线；驱动开关管，所述驱动开关管的第一端连接电源电压，所述驱动开关管的第二端连接所述发光元件，用于驱动所述发光元件发光；第一开关管，所述第一开关管的第一端连接所述驱动开关管的控制端，所述第一开关管的控制端连接所述脉冲宽度调制信号线；第二开关管，所述第二开关管的第一端连接所述第一开关管的第一端，所述第二开关管的第二端连接所述数据线，所述第二开关管的控制端连接所述扫描线；存储电容，所述存储电容的第一端连接所述第一开关管的第一端，所述存储电容的第二端连接所述公共电压。\n\n[0013]其中，所述脉冲宽度调制信号线输出脉冲调制信号至所述第一开关管的时间晚于所述扫描线输出扫描信号至所述第二开关管的时间。\n\n[0014]本申请的有益效果是：提供一种显示面板及显示装置，通过通过利用脉冲宽度调制信号来调整像素单元的发光时长，能够达到低亮度驱动显示，避免经过发光元件电流过大而造成其亮度过亮的情况发生。\n\n附图说明\n\n[0015]为了更清楚地说明本申请的方案，下面将对实施例描述中所需要使用的附图作一个简单介绍，显而易见地，下面描述中的附图是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0016]图1是本申请显示面板一实施方式的结构示意图；\n\n[0017]图2是本申请像素单元一实施方式的结构示意图；\n\n[0018]图3是本申请像素单元一实施方式的工作的波形时序图；\n\n[0019]图4是本申请显示装置一实施方式的结构示意图。\n\n具体实施方式\n\n[0020]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本申请的一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0021]除非另有定义，本文所使用的所有的技术和科学术语与属于本申请技术领域的技术人员通常理解的含义相同；本文中在申请的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本申请；本申请的说明书和权利要求书及上述附图说明中的术语“包括”和“具有”以及它们的任何变形，意图在于覆盖不排他的包含。本申请的说明书和权利要求书或上述附图中的术语“第一”、“第二”等是用于区别不同对象，而不是用于描述特定顺序。\n\n[0022]在本文中提及“实施例”意味着，结合实施例描述的特定特征、结构或特性可以包含在本申请的至少一个实施例中。在说明书中的各个位置出现该短语并不一定均是指相同的实施例，也不是与其它实施例互斥的独立的或备选的实施例。本领域技术人员显式地和隐式地理解的是，本文所描述的实施例可以与其它实施例相结合。\n\n[0023]请参阅图1，图1为本申请显示面板一实施方式的结构示意图，如图1所示本申请中提供的显示面板100包括多个像素单元110、多条扫描线120(G1、G2...Gn)、多条数据线130(D1、D2...Dn)以及多条脉冲宽度调制信号线140(G1-P、G2-P...Gn-P)。\n\n[0024]其中，每一所述的扫描线120耦接多个像素单元中的一行像素单元110，用于输出扫描信号至像素单元110。每一所述数据线130耦接多个像素单元中的一列像素单元110，用于输出数据信号至像素单元110。\n\n[0025]可选地，每一脉冲宽度调制信号线140耦接多个像素单元中的一行像素单元110，用于输出脉冲宽度调制信号至像素单元110并控制该像素单元110的发光时间以实现显示不同灰阶。\n\n[0026]本申请中采用脉冲宽度调制(Pulse Width Modulation， PWM)来控制像素单元的发光时间，从而实现低亮度驱动，避免发光元件亮度过亮的问题。\n\n[0027]请进一步结合图2，图2为本申请像素单元一实施方式方式的结构示意图，参阅图2，本申请的像素单元110至少包括发光元件111、驱动开关管T、第一开关管T1、第二开关管T2以及存储电容C。\n\n[0028]其中，发光元件111的一端连接公共电压Vss，用于为像素单元110提供光线，且该公共电压Vss可以为接地电压。本实施例中的发光元件111可以为微发光二极管(microLED)，在其它实施方式中还可以是有机发光二极管(OLED)或者发光二极管，此处不做具体限定。\n\n[0029]驱动开关管T，该驱动开关管T的第一端连接电源电压Vdd，该驱动开关管T的第二端连接发光元件111，用于驱动发光元件111发光。且一般来说，该电源电压Vdd的值大于公共电压Vss的电压值。\n\n[0030]第一开关管T1，该第一开关管T1的第一端连接驱动开关管T的控制端，第一开关管T1的控制端连接脉冲宽度调制信号线140。\n\n[0031]第二开关管T2，该第二开关管T2的第一端连接第一开关管T1的第一端，第二开关管T2的第二端连接数据线130，第二开关管T2的控制端连接扫描线120。\n\n[0032]存储电容C，该存储电容C的第一端连接第一开关管T1的第一端，该存储电容C的第二端连接公共电压Vss。\n\n[0033]可选地，上述驱动开关管T、第一开关管T1以及第二开关管T2可以为薄膜场效应晶体管，也可以为其他可以实现开关功能的电子器件，本发明不做具体限定。且本发明中涉及到开关管的第一端可以为开关管的漏极、第二端可以为开关管的源极，在具体实施例中，开关管的源极和漏极可以互换，此处也不做具体限定。\n\n[0034]一并结合图3，图3为本申请像素单元一实施方式的工作的波形时序图。如图3，简单来说本申请中像素单元110的驱动过程可以包括像素初始化、阈值产生、数据写入以及发光写入四个阶段。本申请主要介绍数据写入以及发光写入阶段，具体如下：\n\n[0035]在数据写入阶段，扫描线120和脉冲宽度调制信号线140不同时输出信号，即本申请中脉冲宽度调制信号线140输出脉冲调制信号至第一开关管T1控制端的时间晚于扫描线120输出扫描信号至第二开关管T2控制端的时间。也即是本申请通过延迟脉冲宽度调制信号的输出来控制像素单元110中发光元件111的发光时长，从而实现显示不同的灰阶。\n\n[0036]可选地，本申请中像素单元110中发光元件111的发光时间和像素单元110的亮度值相关。可以理解的是，脉冲宽度调制信号在一帧里面的开启时长，即相对于扫描信号的延迟时间由像素单元需要多少亮度值决定。\n\n[0037]可选地，只有脉冲宽度调制信号输出至第一开关管T1处，第一开关管T1导通，电源电压Vdd给发光元件111电流，从而使得发光元件111发光。其中，发光元件111的发光时间(脉冲宽度调制信号的输出时间)则和像素单元所需要的亮度值相关，而亮度值则由显示面板100点gamma曲线来决定。举例来说，显示面板呈现256灰阶，每个灰阶有对应的亮度数值，例如G255＝100nits，G32＝1nits，其中，G代表灰阶，G255代表255灰阶。在本申请一具体应用场景中，以显示面板的驱动频率为60Hz为例，若像素单元110的所要显示的灰阶为G255，则脉冲宽度调制信号的开启时间为16ms(第一晶体管T1点开启时间，也即是发光元件111的发光时间)，同理对于G32，其亮度值为G255的百分之一，其对应的脉冲宽度调制信号的开启时间可以为0.16ms。也就是说，知道每一像素单元110所需要点亮度值就可以知道脉冲宽度调制信号的开启时间，从而可以知道发光元件111的发光时间。\n\n[0038]可选地，每一灰阶需要多少亮度可以预先设置好，具体可以参照gamma2.2亮度和时间的设定，如下：\n\n[0039]表1 gamma2.2亮度与时间的设定参考表\n\n[0040]\n\n[0041]可以理解的是，对于显示面板100中的每一行所述像素单元110，其脉冲宽度调制信号的开启时间均需要做延迟，且其延迟的时间长度和该行像素单元所需的亮度值相关，详见上述实施方式的具体描述，此处不再赘述。\n\n[0042]本申请中通过将脉冲宽度调制信号线输出脉冲调制信号至第一开关管控制端的时间设置为晚于扫描线输出扫描信号至第二开关管控制端的时间，即延迟脉冲宽度调制信号的打开时间，能够调整像素单元的发光时长，从而达到低亮度驱动，避免经过发光元件电流过大而造成其亮度过亮。\n\n[0043]上述实施方式中，通过利用脉冲宽度调制信号来调整像素单元的发光时长，能够达到低亮度驱动，避免经过发光元件电流过大而造成其亮度过亮的情况发生。\n\n[0044]参阅图4，图4为本申请显示装置一实施方式的结构示意图，如图4，本申请中的显示装置200包括显示面板F、扫描驱动电路210、数据驱动电路220以及脉冲宽度调制电路230。\n\n[0045]其中，显示面板F进一步包括多个像素单元110、多条扫描线120、多条数据线130以及多条脉冲宽度调制信号线140，其中像素单元110、扫描线120、数据线130以及脉冲宽度调制信号线140的具体作用和连接关系参见上述实施方式中的具体描述，此处不再赘述。\n\n[0046]可选地，像素单元110至少包括发光元件111、驱动开关管T、第一开关管T1、第二开关管T2以及存储电容C。\n\n[0047]其中，其中，发光元件111的一端连接公共电压Vss，用于为像素单元110提供光线，且该公共电压Vss可以为接地电压。本实施例中的发光元件111可以为微发光二极管(microLED)，在其它实施方式中还可以是有机发光二极管(OLED)或者发光二极管，此处不做具体限定。\n\n[0048]驱动开关管T，该驱动开关管T的第一端连接电源电压Vdd，该驱动开关管T的第二端连接发光元件111，用于驱动发光元件111发光。且一般来说，该电源电压Vdd的值大于公共电压Vss的电压值。\n\n[0049]第一开关管T1，该第一开关管T1的第一端连接驱动开关管T的控制端，第一开关管T1的控制端连接脉冲宽度调制信号线140。\n\n[0050]第二开关管T2，该第二开关管T2的第一端连接第一开关管T1的第一端，第二开关管T2的第二端连接数据线130，第二开关管T2的控制端连接扫描线120。\n\n[0051]存储电容C，该存储电容C的第一端连接第一开关管T1的第一端，该存储电容C的第二端连接公共电压Vss。\n\n[0052]可选地，扫描驱动电路210耦接多条扫描线120，用以为多个像素单元110提供扫描信号。\n\n[0053]数据驱动电路220耦接多条数信号据线130，用以为多个像素单元提供数据信号。\n\n[0054]脉冲宽度调制电路230耦接脉冲宽度调制信号线140，用以提供脉冲调制信号至像素单元110，以控制像素单元110的发光时间从而实现显示装置200显示不同灰阶。\n\n[0055]其中，每一像素单元110的发光时间和像素单元110的亮度值相关。且脉冲宽度调制信号线140输出脉冲调制信号至第一开关管T1的时间晚于扫描线120输出扫描信号至第二开关管T2的时间。且本申请电路的具体实现原理参见上文显示面板实施方式中的具体描述，此处不再赘述。\n\n[0056]上述实施方式中，通过利用脉冲宽度调制信号来调整像素单元的发光时长，能够达到低亮度驱动，避免经过发光元件电流过大而造成其亮度过亮的情况发生。\n\n[0057]综上所述，本领域技术人员容易理解，本申请提供一种显示面板及显示装置，通过利用脉冲宽度调制信号来调整像素单元的发光时长，能够达到低亮度驱动，避免经过发光元件电流过大而造成其亮度过亮的情况发生。\n\n[0058]以上所述仅为本申请的实施方式，并非因此限制本申请的专利范围，凡是利用本申请说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本申请的专利保护范围内。');
INSERT INTO `os_patent_instruction_text` VALUES (10663, 23717, '技术领域\n\n[0001]本发明涉及显示技术领域，特别涉及一种超声波指纹识别模组及包括其的显示面板。\n\n背景技术\n\n[0002]超声波指纹识别技术不会受到水和油污的干扰、具有更强的环境适应能力，因此超声波指纹识别技术受到广泛应用。例如，超声波指纹识别技术被用于各个领域，可以提升手机、电脑、平板和门禁系统等电子产品的安全性。与传统的数字密码相较，由于指纹解锁的快速性，超声波指纹识别技术给人们的生活带来很多的便利。\n\n[0003]超声波指纹识别模组具有典型的压电元件结构100，如图1A所示，包括上电极101、压电薄膜层102和下电极103。另外，有些压电元件结构100具有如图1B所示的构造，其额外设置一绝缘层104，以增加压电材料振动的空腔，利于超声波模组发射较强的声压、提升最后接收的电信号及信噪比等。给压电薄膜层输入电能，使其转换成机械能发生高频振动，从而发生超声波；当超声波发射回来，也会引起压电薄膜层的振动，再转换成电能。然而，这个能量转换的效率很低，通常低于10％。另外，在能量的转换过程中会有大量的能量损失，所损失的能量是转换成热能。所产生的热能会破坏超声波指纹识别模组的性能，使超声波指纹识别模组逐渐失效。又，压电薄膜层的材质都是热电材料，多余的热量会产生热电流，使得指纹识别的噪声增加，从而影响指纹识别的精度。故，当前超声波指纹识别传感器的性能并不尽如人意。\n\n[0004]因此，有必要提供一种超声波指纹识别模组及包括其的显示面板，以解决现有技术所存在的问题。\n\n发明内容\n\n[0005]本发明的目的在于提供一种超声波指纹识别模组及包括其的显示面板，以解决现有技术中超声波指纹识别模组的性能不佳的技术问题。\n\n[0006]为解决上述技术问题，本发明提供一种超声波指纹识别模组，其特征在于，包括：\n\n[0007]一下电极；\n\n[0008]一压电材料层，设置在所述下电极上；\n\n[0009]一上电极，设置在所述压电材料层上；及\n\n[0010]一散热层，设置成覆盖所述下电极、所述压电材料层与所述上电极的至少一个的侧面。\n\n[0011]在本发明的超声波指纹识别模组中，所述下电极与所述上电极的材质是银、铝、钼、金、铬、镍、铜、铂或上述材质的任意组合的合金。\n\n[0012]在本发明的超声波指纹识别模组中，所述压电材料层的材质是氮化铝、锆钛酸铅、聚偏氟乙烯或聚偏氟乙烯-三氟乙烯共聚物。\n\n[0013]在本发明的超声波指纹识别模组中，所述散热层是散热硅胶层、液态金属导热散热片或二氧化硅散热层。\n\n[0014]在本发明的超声波指纹识别模组中，所述散热层的厚度在1微米至100微米之间。\n\n[0015]在本发明的超声波指纹识别模组中，所述散热层的厚度在30微米至50微米之间。\n\n[0016]本发明还提供一种显示面板，其特征在于，所述显示面板包括如上所述的超声波指纹识别模组。\n\n[0017]在本发明所述的显示面板中，所述显示面板具有一显示区域，所述超声波指纹识别模组设置在所述显示区域的任何特定位置。\n\n[0018]在本发明所述的显示面板中，所述显示面板是有机发光二极管面板或液晶显示面板。\n\n[0019]在本发明所述的显示面板中，所述显示面板更包括一触控层，所述触控层是外挂式触控层、On-Cell触控层或In-Cell触控层。\n\n[0020]相较于现有技术，本发明提出一种超声波指纹识别模组及包括其的显示面板。通过在超声波指纹识别模组的侧面设置散热层，可以将压电材料层振动产生的多余的热量吸收且扩散。因此，超声波指纹识别模组可以受到保护，提高其识别效果、稳定性及使用寿命。又，散热层位于超声波指纹识别模组的侧面，这样不会增加模组的厚度，利于其轻薄化。此外，设置在超声波指纹识别模组的侧面的吸热和散热效果也比设置在上电极上方和下电极下方较好，可以很好地起到吸热与散热的效果。\n\n附图说明\n\n[0021]图1A显示根据现有技术的一种压电元件结构的侧面剖视图。\n\n[0022]图1B显示根据现有技术的另一种压电元件结构的侧面剖视图。\n\n[0023]图2A显示根据本发明第一实施例的超声波指纹识别模组的侧面剖视图。\n\n[0024]图2B显示根据本发明第二实施例的超声波指纹识别模组的侧面剖视图。\n\n[0025]图3A显示根据本发明第一实施例的显示面板的显示区域的平面图。\n\n[0026]图3B显示根据本发明第二实施例的显示面板的显示区域的平面图。\n\n[0027]图4A显示根据本发明第一实施例的液晶显示面板的侧面剖视图。\n\n[0028]图4B显示根据本发明第二实施例的液晶显示面板的侧面剖视图。\n\n[0029]图4C显示根据本发明第二实施例的液晶显示面板的侧面剖视图。\n\n具体实施方式\n\n[0030]以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。\n\n[0031]请参考图2A，图2A显示根据本发明第一实施例的超声波指纹识别模组的侧面剖视图。本发明提出一种超声波指纹识别模组200，所述超声波指纹识别模组200包括：\n\n[0032]一下电极203；\n\n[0033]一压电材料层202，设置在所述下电极203上；\n\n[0034]一上电极201，设置在所述压电材料层202上；及\n\n[0035]一散热层204，设置成覆盖所述下电极203、所述压电材料层202与所述上电极201的至少一个的侧面。\n\n[0036]在本实施例中，所述下电极203与所述上电极201的材质是银(Ag)、铝(Al)、钼(Mo)、金(Au)、铬(Cr)、镍(Ni)、铜(CU)、铂(Pt)或上述材质的任意组合的合金。\n\n[0037]在本实施例中，所述压电材料层的材质是氮化铝(AlN)、锆钛酸铅(PZT)、聚偏氟乙烯(PVDF)或聚偏氟乙烯-三氟乙烯共聚物(P(VDF-TrFE))。\n\n[0038]所述散热层204可以是散热硅胶层、液态金属导热散热片或二氧化硅散热层。由于这些材料均具有优良的散热能力，能够将超声波指纹识别模组200中过多的热量吸收和扩散出去，所以热量不会累积在超声波指纹识别模组200内，超声波指纹识别模组200可以受到保护。然而，本发明不对所述散热层204的材质作具体限定，只要所述散热层204可以将热量吸收和扩散出去，所述散热层204的材质即落在本发明所欲保护的范围内。\n\n[0039]可以理解的是，为了达到吸热和散热效果，所述散热层204设置成覆盖所述下电极203、所述压电材料层202与所述上电极201的至少一个的侧面。\n\n[0040]例如，所述散热层204可以设置成覆盖所述下电极203、所述压电材料层202与所述上电极201的至少一个的整个周围的侧面。或者，所述散热层204可以设置成覆盖所述下电极203、所述压电材料层202与所述上电极201的至少一个的仅部分周围的侧面，例如仅左右侧面。\n\n[0041]另外，所述散热层204可以设置成具有一预定厚度(即高度)，所述厚度可以覆盖整个所述下电极203的侧面、整个所述压电材料层202的侧面与整个所述上电极201的侧面，如图2A所示。或者，所述散热层204可以设置成具有一预定厚度(即高度)，所述厚度可以覆盖整个所述下电极203的侧面、整个所述压电材料层202的侧面与部分上电极201的侧面，如图2B所示。优选的，所述散热层的厚度(即高度)在1微米至100微米之间。更优选的，所述散热层的厚度(即高度)在30微米至50微米之间。\n\n[0042]又，若超声波指纹识别模组具有如图1B所显示的结构时，所述散热层204可以覆盖所述绝缘层104、所述下电极103、所述压电材料层102与所述上电极101的至少一个的侧面。\n\n[0043]通过在超声波指纹识别模组的侧面设置散热层，可以将压电材料层振动产生的多余的热量吸收且扩散。因此，超声波指纹识别模组可以受到保护，提高其识别效果、稳定性及使用寿命。又，散热层位于超声波指纹识别模组的侧面，这样不会增加模组的厚度，利于其轻薄化。此外，设置在超声波指纹识别模组的侧面的吸热和散热效果也比设置在上电极上方和下电极下方较好，可以很好地起到吸热与散热的效果。\n\n[0044]本发明不对所述散热层204的设置位置与厚度作具体限定，只要所述散热层204可以将热量吸收和扩散出去、起到散热效果，所述散热层204的设置位置与厚度即落在本发明所欲保护的范围内。\n\n[0045]本发明还提供一种显示面板，所述显示面板可用于例如手机、电脑、平板和门禁系统。例如，所述显示面板可以是有机发光二极管(organic light emitting diode，OLED)面板或液晶显示(liquid crystal display，LCD)面板。\n\n[0046]所述显示面板包括如上所述的超声波指纹识别模组200。\n\n[0047]所述显示面板具有一显示区域300，所述超声波指纹识别模组200设置在所述显示区域300的任何特定位置。举例而言，如图3A所示，所述超声波指纹识别模组200可以设置在所述显示区域300的靠近底部的位置，而没有占满所述显示区域300的整个底部。又例如，如图3B所示，所述超声波指纹识别模组200可以设置在所述显示区域300的整个底部。本发明不对所述超声波指纹识别模组200的设置位置作具体限定，只要所述超声波指纹识别模组200可以在手指按压时起到指纹识别的效果，所述超声波指纹识别模组200的设置位置即落在本发明所欲保护的范围内。\n\n[0048]以下是以显示面板是液晶显示面板为例进行说明。\n\n[0049]请参照图4A，其显示根据本发明第一实施例的液晶显示面板的侧面剖视图。所述液晶显示面板400由下往上包括：背光源41、下偏光板42、薄膜晶体管(thin filmtransistor，TFT)基板43、超声波指纹识别模组44、彩膜(color filter，CF)层45、对向基板46、上偏光板47、触控层48、保护层49。另外，所述液晶显示面板400更包括积体电路(integrated circuit，IC)51及软性印刷电路版(Flexible Printed Circuit，FPC)52。\n\n[0050]CF层45包括红色色阻R、绿色色阻G、蓝色色阻B。\n\n[0051]TFT基板43上形成有电路，包括用于控制像素区的开启/关闭的栅极、源极和漏极，以及用于超声波的发射和接收。\n\n[0052]保护层49为透光材料，保护层49用于保护显示和指纹识别模组，例如其材质可以是玻璃、蓝宝石和透明高分子材料等。\n\n[0053]在本实施例中，触控层48位在上偏光板47上方，因此所述触控层48为外挂式触控层。\n\n[0054]散热层的加入可以提高超声波指纹识别模组的识别效果、稳定性及使用寿命。\n\n[0055]请参照图4B，其显示根据本发明第二实施例的液晶显示面板的侧面剖视图。所述液晶显示面板400由下往上包括：背光源41、下偏光板42、薄膜晶体管(thin filmtransistor，TFT)基板43、超声波指纹识别模组44、彩膜(color filter，CF)层45、对向基板46、触控层48、上偏光板47、保护层49。另外，所述液晶显示面板400更包括：积体电路(integrated circuit，IC)51及软性印刷电路版(Flexible Printed Circuit，FPC)52。\n\n[0056]本实施例与前述图4A的第一实施例的部分结构技术特征相同，故在此不再赘述。\n\n[0057]但是，本实施例与前述图4A的第一实施例的差异在于触控层48是位在上偏光板47与对向基板46之间，因此所述触控层是On-Cell触控层。\n\n[0058]与第一实施例的效果类似，散热层的加入可以提高超声波指纹识别模组的识别效果、稳定性及使用寿命。\n\n[0059]请参照图4C，其显示根据本发明第三实施例的液晶显示面板的侧面剖视图。所述液晶显示面板400由下往上包括：背光源41、下偏光板42、薄膜晶体管(thin filmtransistor，TFT)基板43、超声波指纹识别模组44、彩膜(color filter，CF)层45、触控层48、对向基板46、上偏光板47、保护层49。另外，所述液晶显示面板400更包括：积体电路(integrated circuit，IC)51及软性印刷电路版(Flexible Printed Circuit，FPC)52。\n\n[0060]本实施例与前述图4A的第一实施例的部分结构技术特征相同，故在此不再赘述。\n\n[0061]但是，本实施例与前述图4A的第一实施例的差异在于触控层48是位在液晶盒(liquid crystal cell)内，因此所述触控层是In-Cell触控层。\n\n[0062]与第一实施例的效果类似，散热层的加入可以提高超声波指纹识别模组的识别效果、稳定性及使用寿命。\n\n[0063]相较于现有技术，本发明提出一种超声波指纹识别模组及包括其的显示面板。通过在超声波指纹识别模组的侧面设置散热层，可以将压电材料层振动产生的多余的热量吸收且扩散。因此，超声波指纹识别模组可以受到保护，提高其识别效果、稳定性及使用寿命。又，散热层位于超声波指纹识别模组的侧面，这样不会增加模组的厚度，利于其轻薄化。此外，设置在超声波指纹识别模组的侧面的吸热和散热效果也比设置在上电极上方和下电极下方较好，可以很好地起到吸热与散热的效果。\n\n[0064]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及显示技术领域，特别涉及一种超声波指纹识别模组及包括其的显示面板。\n\n背景技术\n\n[0002]超声波指纹识别技术不会受到水和油污的干扰、具有更强的环境适应能力，因此超声波指纹识别技术受到广泛应用。例如，超声波指纹识别技术被用于各个领域，可以提升手机、电脑、平板和门禁系统等电子产品的安全性。与传统的数字密码相较，由于指纹解锁的快速性，超声波指纹识别技术给人们的生活带来很多的便利。\n\n[0003]超声波指纹识别模组具有典型的压电元件结构100，如图1A所示，包括上电极101、压电薄膜层102和下电极103。另外，有些压电元件结构100具有如图1B所示的构造，其额外设置一绝缘层104，以增加压电材料振动的空腔，利于超声波模组发射较强的声压、提升最后接收的电信号及信噪比等。给压电薄膜层输入电能，使其转换成机械能发生高频振动，从而发生超声波；当超声波发射回来，也会引起压电薄膜层的振动，再转换成电能。然而，这个能量转换的效率很低，通常低于10％。另外，在能量的转换过程中会有大量的能量损失，所损失的能量是转换成热能。所产生的热能会破坏超声波指纹识别模组的性能，使超声波指纹识别模组逐渐失效。又，压电薄膜层的材质都是热电材料，多余的热量会产生热电流，使得指纹识别的噪声增加，从而影响指纹识别的精度。故，当前超声波指纹识别传感器的性能并不尽如人意。\n\n[0004]因此，有必要提供一种超声波指纹识别模组及包括其的显示面板，以解决现有技术所存在的问题。\n\n发明内容\n\n[0005]本发明的目的在于提供一种超声波指纹识别模组及包括其的显示面板，以解决现有技术中超声波指纹识别模组的性能不佳的技术问题。\n\n[0006]为解决上述技术问题，本发明提供一种超声波指纹识别模组，其特征在于，包括：\n\n[0007]一下电极；\n\n[0008]一压电材料层，设置在所述下电极上；\n\n[0009]一上电极，设置在所述压电材料层上；及\n\n[0010]一散热层，设置成覆盖所述下电极、所述压电材料层与所述上电极的至少一个的侧面。\n\n[0011]在本发明的超声波指纹识别模组中，所述下电极与所述上电极的材质是银、铝、钼、金、铬、镍、铜、铂或上述材质的任意组合的合金。\n\n[0012]在本发明的超声波指纹识别模组中，所述压电材料层的材质是氮化铝、锆钛酸铅、聚偏氟乙烯或聚偏氟乙烯-三氟乙烯共聚物。\n\n[0013]在本发明的超声波指纹识别模组中，所述散热层是散热硅胶层、液态金属导热散热片或二氧化硅散热层。\n\n[0014]在本发明的超声波指纹识别模组中，所述散热层的厚度在1微米至100微米之间。\n\n[0015]在本发明的超声波指纹识别模组中，所述散热层的厚度在30微米至50微米之间。\n\n[0016]本发明还提供一种显示面板，其特征在于，所述显示面板包括如上所述的超声波指纹识别模组。\n\n[0017]在本发明所述的显示面板中，所述显示面板具有一显示区域，所述超声波指纹识别模组设置在所述显示区域的任何特定位置。\n\n[0018]在本发明所述的显示面板中，所述显示面板是有机发光二极管面板或液晶显示面板。\n\n[0019]在本发明所述的显示面板中，所述显示面板更包括一触控层，所述触控层是外挂式触控层、On-Cell触控层或In-Cell触控层。\n\n[0020]相较于现有技术，本发明提出一种超声波指纹识别模组及包括其的显示面板。通过在超声波指纹识别模组的侧面设置散热层，可以将压电材料层振动产生的多余的热量吸收且扩散。因此，超声波指纹识别模组可以受到保护，提高其识别效果、稳定性及使用寿命。又，散热层位于超声波指纹识别模组的侧面，这样不会增加模组的厚度，利于其轻薄化。此外，设置在超声波指纹识别模组的侧面的吸热和散热效果也比设置在上电极上方和下电极下方较好，可以很好地起到吸热与散热的效果。\n\n附图说明\n\n[0021]图1A显示根据现有技术的一种压电元件结构的侧面剖视图。\n\n[0022]图1B显示根据现有技术的另一种压电元件结构的侧面剖视图。\n\n[0023]图2A显示根据本发明第一实施例的超声波指纹识别模组的侧面剖视图。\n\n[0024]图2B显示根据本发明第二实施例的超声波指纹识别模组的侧面剖视图。\n\n[0025]图3A显示根据本发明第一实施例的显示面板的显示区域的平面图。\n\n[0026]图3B显示根据本发明第二实施例的显示面板的显示区域的平面图。\n\n[0027]图4A显示根据本发明第一实施例的液晶显示面板的侧面剖视图。\n\n[0028]图4B显示根据本发明第二实施例的液晶显示面板的侧面剖视图。\n\n[0029]图4C显示根据本发明第二实施例的液晶显示面板的侧面剖视图。\n\n具体实施方式\n\n[0030]以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。\n\n[0031]请参考图2A，图2A显示根据本发明第一实施例的超声波指纹识别模组的侧面剖视图。本发明提出一种超声波指纹识别模组200，所述超声波指纹识别模组200包括：\n\n[0032]一下电极203；\n\n[0033]一压电材料层202，设置在所述下电极203上；\n\n[0034]一上电极201，设置在所述压电材料层202上；及\n\n[0035]一散热层204，设置成覆盖所述下电极203、所述压电材料层202与所述上电极201的至少一个的侧面。\n\n[0036]在本实施例中，所述下电极203与所述上电极201的材质是银(Ag)、铝(Al)、钼(Mo)、金(Au)、铬(Cr)、镍(Ni)、铜(CU)、铂(Pt)或上述材质的任意组合的合金。\n\n[0037]在本实施例中，所述压电材料层的材质是氮化铝(AlN)、锆钛酸铅(PZT)、聚偏氟乙烯(PVDF)或聚偏氟乙烯-三氟乙烯共聚物(P(VDF-TrFE))。\n\n[0038]所述散热层204可以是散热硅胶层、液态金属导热散热片或二氧化硅散热层。由于这些材料均具有优良的散热能力，能够将超声波指纹识别模组200中过多的热量吸收和扩散出去，所以热量不会累积在超声波指纹识别模组200内，超声波指纹识别模组200可以受到保护。然而，本发明不对所述散热层204的材质作具体限定，只要所述散热层204可以将热量吸收和扩散出去，所述散热层204的材质即落在本发明所欲保护的范围内。\n\n[0039]可以理解的是，为了达到吸热和散热效果，所述散热层204设置成覆盖所述下电极203、所述压电材料层202与所述上电极201的至少一个的侧面。\n\n[0040]例如，所述散热层204可以设置成覆盖所述下电极203、所述压电材料层202与所述上电极201的至少一个的整个周围的侧面。或者，所述散热层204可以设置成覆盖所述下电极203、所述压电材料层202与所述上电极201的至少一个的仅部分周围的侧面，例如仅左右侧面。\n\n[0041]另外，所述散热层204可以设置成具有一预定厚度(即高度)，所述厚度可以覆盖整个所述下电极203的侧面、整个所述压电材料层202的侧面与整个所述上电极201的侧面，如图2A所示。或者，所述散热层204可以设置成具有一预定厚度(即高度)，所述厚度可以覆盖整个所述下电极203的侧面、整个所述压电材料层202的侧面与部分上电极201的侧面，如图2B所示。优选的，所述散热层的厚度(即高度)在1微米至100微米之间。更优选的，所述散热层的厚度(即高度)在30微米至50微米之间。\n\n[0042]又，若超声波指纹识别模组具有如图1B所显示的结构时，所述散热层204可以覆盖所述绝缘层104、所述下电极103、所述压电材料层102与所述上电极101的至少一个的侧面。\n\n[0043]通过在超声波指纹识别模组的侧面设置散热层，可以将压电材料层振动产生的多余的热量吸收且扩散。因此，超声波指纹识别模组可以受到保护，提高其识别效果、稳定性及使用寿命。又，散热层位于超声波指纹识别模组的侧面，这样不会增加模组的厚度，利于其轻薄化。此外，设置在超声波指纹识别模组的侧面的吸热和散热效果也比设置在上电极上方和下电极下方较好，可以很好地起到吸热与散热的效果。\n\n[0044]本发明不对所述散热层204的设置位置与厚度作具体限定，只要所述散热层204可以将热量吸收和扩散出去、起到散热效果，所述散热层204的设置位置与厚度即落在本发明所欲保护的范围内。\n\n[0045]本发明还提供一种显示面板，所述显示面板可用于例如手机、电脑、平板和门禁系统。例如，所述显示面板可以是有机发光二极管(organic light emitting diode，OLED)面板或液晶显示(liquid crystal display，LCD)面板。\n\n[0046]所述显示面板包括如上所述的超声波指纹识别模组200。\n\n[0047]所述显示面板具有一显示区域300，所述超声波指纹识别模组200设置在所述显示区域300的任何特定位置。举例而言，如图3A所示，所述超声波指纹识别模组200可以设置在所述显示区域300的靠近底部的位置，而没有占满所述显示区域300的整个底部。又例如，如图3B所示，所述超声波指纹识别模组200可以设置在所述显示区域300的整个底部。本发明不对所述超声波指纹识别模组200的设置位置作具体限定，只要所述超声波指纹识别模组200可以在手指按压时起到指纹识别的效果，所述超声波指纹识别模组200的设置位置即落在本发明所欲保护的范围内。\n\n[0048]以下是以显示面板是液晶显示面板为例进行说明。\n\n[0049]请参照图4A，其显示根据本发明第一实施例的液晶显示面板的侧面剖视图。所述液晶显示面板400由下往上包括：背光源41、下偏光板42、薄膜晶体管(thin filmtransistor，TFT)基板43、超声波指纹识别模组44、彩膜(color filter，CF)层45、对向基板46、上偏光板47、触控层48、保护层49。另外，所述液晶显示面板400更包括积体电路(integrated circuit，IC)51及软性印刷电路版(Flexible Printed Circuit，FPC)52。\n\n[0050]CF层45包括红色色阻R、绿色色阻G、蓝色色阻B。\n\n[0051]TFT基板43上形成有电路，包括用于控制像素区的开启/关闭的栅极、源极和漏极，以及用于超声波的发射和接收。\n\n[0052]保护层49为透光材料，保护层49用于保护显示和指纹识别模组，例如其材质可以是玻璃、蓝宝石和透明高分子材料等。\n\n[0053]在本实施例中，触控层48位在上偏光板47上方，因此所述触控层48为外挂式触控层。\n\n[0054]散热层的加入可以提高超声波指纹识别模组的识别效果、稳定性及使用寿命。\n\n[0055]请参照图4B，其显示根据本发明第二实施例的液晶显示面板的侧面剖视图。所述液晶显示面板400由下往上包括：背光源41、下偏光板42、薄膜晶体管(thin filmtransistor，TFT)基板43、超声波指纹识别模组44、彩膜(color filter，CF)层45、对向基板46、触控层48、上偏光板47、保护层49。另外，所述液晶显示面板400更包括：积体电路(integrated circuit，IC)51及软性印刷电路版(Flexible Printed Circuit，FPC)52。\n\n[0056]本实施例与前述图4A的第一实施例的部分结构技术特征相同，故在此不再赘述。\n\n[0057]但是，本实施例与前述图4A的第一实施例的差异在于触控层48是位在上偏光板47与对向基板46之间，因此所述触控层是On-Cell触控层。\n\n[0058]与第一实施例的效果类似，散热层的加入可以提高超声波指纹识别模组的识别效果、稳定性及使用寿命。\n\n[0059]请参照图4C，其显示根据本发明第三实施例的液晶显示面板的侧面剖视图。所述液晶显示面板400由下往上包括：背光源41、下偏光板42、薄膜晶体管(thin filmtransistor，TFT)基板43、超声波指纹识别模组44、彩膜(color filter，CF)层45、触控层48、对向基板46、上偏光板47、保护层49。另外，所述液晶显示面板400更包括：积体电路(integrated circuit，IC)51及软性印刷电路版(Flexible Printed Circuit，FPC)52。\n\n[0060]本实施例与前述图4A的第一实施例的部分结构技术特征相同，故在此不再赘述。\n\n[0061]但是，本实施例与前述图4A的第一实施例的差异在于触控层48是位在液晶盒(liquid crystal cell)内，因此所述触控层是In-Cell触控层。\n\n[0062]与第一实施例的效果类似，散热层的加入可以提高超声波指纹识别模组的识别效果、稳定性及使用寿命。\n\n[0063]相较于现有技术，本发明提出一种超声波指纹识别模组及包括其的显示面板。通过在超声波指纹识别模组的侧面设置散热层，可以将压电材料层振动产生的多余的热量吸收且扩散。因此，超声波指纹识别模组可以受到保护，提高其识别效果、稳定性及使用寿命。又，散热层位于超声波指纹识别模组的侧面，这样不会增加模组的厚度，利于其轻薄化。此外，设置在超声波指纹识别模组的侧面的吸热和散热效果也比设置在上电极上方和下电极下方较好，可以很好地起到吸热与散热的效果。\n\n[0064]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10664, 23718, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管显示面板及制备方法。\n\n背景技术\n\n[0002]微发光二极管(Micro LED)显示面板是一种以在一个基板上集成的高密度微小尺寸的发光二极管(LED)阵列作为显示像素来实现图像显示的显示装置，微发光二极管(Micro LED)显示面板属于自发光显示器。\n\n[0003]由于微发光二极管所发的光为全方位的，阵列基板内的薄膜晶体管(TFT)会受到微发光二极管所发出的短波段光照射而产生阈值(Vth)漂移，进而导致光漏电流变大而影响显示效果。\n\n[0004]即，现有微发光二极管显示面板存在微发光二极管发光引起薄膜晶体管阈值偏移的技术问题，需要改进。\n\n发明内容\n\n[0005]本发明提供一种微发光二极管显示面板及制备方法，以缓解现有微发光二极管显示面板存在微发光二极管发光引起薄膜晶体管阈值偏移的技术问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明实施例提供一种微发光二极管显示面板制备方法，其包括：\n\n[0008]提供一基板；\n\n[0009]在所述基板上依次形成有源层、栅绝缘层、栅极、源极和漏极；\n\n[0010]在所述基板上形成第一钝化层，所述第一钝化层覆盖所述源极和漏极；所述第一钝化层上设有第一通孔；\n\n[0011]在所述基板上形成像素电极，所述像素电极通过所述第一通孔连接所述漏极或者所述源极；\n\n[0012]在所述基板上形成遮光层，所述遮光层覆盖所述有源层、栅绝缘层、栅极、源极和漏极；\n\n[0013]在所述基板上设置微发光二极管，所述微发光二极管与所述像素电极连接。\n\n[0014]在本发明实施例提供的微发光二极管显示面板制备方法中，在所述基板上形成遮光层的步骤之前，所述微发光二极管显示面板制备方法还包括：\n\n[0015]在所述像素电极上形成第二钝化层，所述第二钝化层设有第二通孔，所述微发光二极管通过所述第二通孔与所述像素电极连接。\n\n[0016]在本发明实施例提供的微发光二极管显示面板制备方法中，在所述像素电极上形成第二钝化层的步骤之前，所述微发光二极管显示面板制备方法还包括：\n\n[0017]在所述像素电极上形成金属电极，所述微发光二极管通过所述第二通孔、金属电极与所述像素电极连接。\n\n[0018]在本发明实施例提供的微发光二极管显示面板制备方法中，在所述基板上形成遮光层的步骤之后，所述微发光二极管显示面板制备方法还包括：\n\n[0019]在所述遮光层上形成第三钝化层，所述第三钝化层覆盖所述遮光层和部分第二钝化层。\n\n[0020]同时，本发明实施例还提供一种微发光二极管显示面板，其包括：\n\n[0021]基板；\n\n[0022]设置在所述基板上的有源层、栅绝缘层、栅极、源极和漏极；\n\n[0023]覆盖所述源极和所述漏极的第一钝化层，所述第一钝化层上设有第一通孔；\n\n[0024]像素电极，所述像素电极通过所述第一通孔连接所述漏极或者所述源极；\n\n[0025]遮光层，所述遮光层覆盖所述有源层、栅绝缘层、栅极、源极和漏极；\n\n[0026]微发光二极管，所述微发光二极管与所述像素电极连接。\n\n[0027]在本发明提供的微发光二极管显示面板中，所述微发光二极管显示面板还包括：第二钝化层，所述第二钝化层设置在所述像素电极上；所述第二钝化层设有第二通孔，所述微发光二极管通过所述第二通孔与所述像素电极连接。\n\n[0028]在本发明提供的微发光二极管显示面板中，所述微发光二极管显示面板还包括：金属电极，所述金属电极设置在所述像素电极上；所述微发光二极管通过所述第二通孔、金属电极与所述像素电极连接。\n\n[0029]在本发明提供的微发光二极管显示面板中，所述微发光二极管显示面板还包括：第三钝化层，所述第三钝化层设置在所述遮光层上；所述第三钝化层覆盖所述遮光层和部分所述第二钝化层。\n\n[0030]在本发明提供的微发光二极管显示面板中：所述像素电极在所述基板上的投影，与所述源极或者所述漏极在所述基板上的投影部分重合；所述遮光层覆盖部分所述第二钝化层。\n\n[0031]在本发明提供的微发光二极管显示面板中，所述遮光层的材料为黑色光阻。\n\n[0032]本发明的有益效果为：本发明提供一种微发光二极管显示面板及制备方法，该微发光二极管显示面板包括形成薄膜晶体管的有源层、栅绝缘层、栅极、源极和漏极，像素电极、微发光二极管、以及覆盖有源层、栅绝缘层、栅极、源极和漏极的遮光层，基于该遮光层，阻挡了微发光二极管所发出的光线照射到薄膜晶体管，减小了微发光二极管发光对薄膜晶体管的影响，降低了微发光二极管照射薄膜晶体管导致的阈值Vth漂移，进而降低了光漏电流，缓解了现有微发光二极管显示面板存在的微发光二极管发光引起薄膜晶体管阈值偏移的技术问题，同时降低非开启时薄膜晶体管的漏电流，提高亮暗态对比度。\n\n附图说明\n\n[0033]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0034]图1为本发明微发光二极管显示面板的第一种结构示意图；\n\n[0035]图2至图24为本发明微发光二极管显示面板制备方法的流程示意图；\n\n[0036]图25为本发明微发光二极管显示面板的第二种结构示意图；\n\n[0037]图26为本发明微发光二极管显示面板的第三种结构示意图；\n\n[0038]图27为本发明微发光二极管显示面板的第四种结构示意图；\n\n[0039]图28为本发明微发光二极管显示面板的第五种结构示意图；\n\n[0040]图29为本发明微发光二极管显示面板的第六种结构示意图。\n\n具体实施方式\n\n[0041]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0042]针对现有微发光二极管显示面板存在的微发光二极管发光引起薄膜晶体管阈值偏移的技术问题，本发明实施例可以缓解。\n\n[0043]如图1所示，本发明提供的微发光二极管显示面板包括：\n\n[0044]基板101；基板101可以是玻璃或者柔性衬底等；\n\n[0045]设置在所述基板101上的有源层21、栅绝缘层22、栅极23、源极24和漏极25；有源层21、栅绝缘层22、栅极23、源极24和漏极25形成薄膜晶体管；\n\n[0046]覆盖所述源极24和所述漏极25的第一钝化层108，所述第一钝化层108上设有第一通孔a；\n\n[0047]像素电极31，所述像素电极31通过所述第一通孔连接所述漏极25或者所述源极24；在薄膜晶体管为N型薄膜晶体管时，像素电极31通过所述第一通孔连接所述漏极25，在薄膜晶体管为P型薄膜晶体管时，像素电极31通过所述第一通孔连接所述漏极25；\n\n[0048]遮光层112，所述遮光层112覆盖所述有源层21、栅绝缘层22、栅极23、源极24和漏极25；\n\n[0049]微发光二极管4，所述微发光二极管与所述像素电极连接。\n\n[0050]本实施例提供了一种微发光二极管显示面板，该微发光二极管显示面板包括形成薄膜晶体管的有源层、栅绝缘层、栅极、源极和漏极，像素电极、微发光二极管、以及覆盖有源层、栅绝缘层、栅极、源极和漏极的遮光层；基于该遮光层，阻挡了微发光二极管所发出的光线照射到薄膜晶体管，减小了微发光二极管发光对薄膜晶体管的影响。\n\n[0051]在一种实施例中，若像素电极的电位为正时，像素电极31通过所述第一通孔连接所述漏极25，若像素电极的电位为负时，像素电极31通过所述第一通孔连接所述源极24。\n\n[0052]在一种实施例中，如图1所示，所述微发光二极管显示面板还包括：第二钝化层111，所述第二钝化层111设置在所述像素电极31上；所述第二钝化层111设有第二通孔b，所述微发光二极管4通过所述第二通孔与所述像素电极31连接。\n\n[0053]在一种实施例中，如图1所示，所述微发光二极管显示面板还包括：金属电极32，所述金属电极32设置在所述像素电极31上；所述微发光二极管4通过所述第二通孔b、金属电极32与所述像素电极31连接。\n\n[0054]在一种实施例中，如图1所示，所述微发光二极管显示面板还包括：第三钝化层113，所述第三钝化层113设置在所述遮光层112上；所述第三钝化层113覆盖所述遮光层112和部分所述第二钝化层111。\n\n[0055]在一种实施例中，如图1所示，所述像素电极31在所述基板101上的投影，与所述源极或者所述漏极在所述基板上的投影部分重合；所述遮光层112覆盖部分所述第二钝化层111。\n\n[0056]微发光二极管4按照结构不同，可分为垂直结构的微发光二极管和水平结构的微发光二极管，垂直结构的微发光二极管的第一电极和第二电极分别位于微发光二极管的上下两侧，水平的结构的微发光二极管的第一电极和第二电极均位于微发光二极管的下侧。\n\n[0057]在一种实施例中，所述微发光二极管4为水平结构的微发光二极管，所述微发光二极管显示面板还包括：用于连接公共电压的连接电极26、透明公共电极33，透明公共电极33通过所述第一通孔连接所述连接电极26；所述微发光二极管4的第一电极连接像素电极31，第二电极连接透明公共电极33。\n\n[0058]在一种实施例中，如图1所示，所述第二钝化层111还设置在所述透明公共电极33上；所述微发光二极管4的第二电极通过所述第二通孔连接透明公共电极33。\n\n[0059]在一种实施例中，如图1所示，所述微发光二极管显示面板还包括：金属公共电极34，设置在所述透明公共电极33上，所述微发光二极管4的第二电极通过第二过孔、金属公共电极34连接透明公共电极33。\n\n[0060]在一种实施例中，所述微发光二极管4为倒装的水平结构微发光二极管，以提高出光效率。\n\n[0061]在一种实施例中，所述微发光二极管4为垂直结构的微发光二极管，所述微发光二极管显示面板还包括：透明公共电极层，所述微发光二极管4的第一电极连接像素电极31，第二电极连接透明公共电极层。\n\n[0062]在一种实施例中，薄膜晶体管包括驱动薄膜晶体管、开关薄膜晶体管、感测薄膜晶体管等；驱动薄膜晶体管包括金属氧化物半导体薄膜晶体管等，开关薄膜晶体管包括低温多晶硅薄膜晶体管等。\n\n[0063]在一种实施例中，微发光二极管显示基板包括阵列排布的子像素单元，一个子像素单元包括一个微发光二极管4，以及至少一个驱动薄膜晶体管，微发光二极管4在驱动薄膜晶体管的驱动下发光。\n\n[0064]在一种实施例中，像素电极31和透明公共电极33的材料可以是氧化铟锡、氧化铟锌、氧化铝锌等。\n\n[0065]在一种实施例中，金属电极32和金属公共电极34的材料可以是铜钼叠层、铜钼钛叠层、铜钛叠层，铝钼叠层，铜铌合金、镍铬合金等。\n\n[0066]在一种实施例中，所述遮光层112的材料是黑色光阻。\n\n[0067]在一种实施例中，如图1所示，所述微发光二极管显示面板还包括：缓冲层102，设置在所述基板101上，所述有源层21、栅绝缘层22、栅极23、源极24和漏极25设置在所述缓冲层102上。\n\n[0068]在一种实施例中，如图1所示，所述微发光二极管显示面板还包括：中间电介质层106，设置在所述栅极23上，所述源极24和漏极25设置在所述中间电介质层106上。\n\n[0069]在一种实施例中，如图1所示，所述微发光二极管显示面板还包括：封装膜114，封装膜可以为有机/无机交替沉积的隔水氧及机械碰撞保护膜，用于封装微发光二极管4。\n\n[0070]为了制备得到图1所示的微发光二极管显示面板，本发明实施例也提供了一种微发光二极管显示面板制备方法，其包括以下步骤：\n\n[0071]步骤1、提供一基板；\n\n[0072]步骤2、在所述基板上依次形成有源层、栅绝缘层、栅极、源极和漏极；\n\n[0073]步骤3、在所述基板上形成第一钝化层，所述第一钝化层覆盖所述源极和漏极；所述第一钝化层上设有第一通孔；\n\n[0074]步骤4、在所述基板上形成像素电极和遮光层，所述像素电极通过所述第一通孔连接所述漏极或者所述源极，所述遮光层覆盖所述有源层、栅绝缘层、栅极、源极和漏极；\n\n[0075]步骤5、在所述基板上设置微发光二极管，所述微发光二极管与所述像素电极连接。\n\n[0076]在一种实施例中，步骤4包括：\n\n[0077]步骤41、在所述基板上形成像素电极，所述像素电极通过所述第一通孔连接所述漏极或者所述源极；\n\n[0078]步骤42、在所述基板上形成遮光层，所述遮光层覆盖所述有源层、栅绝缘层、栅极、源极和漏极。\n\n[0079]在一种实施例中，在步骤42之前，所述微发光二极管显示面板制备方法还包括：\n\n[0080]步骤43、在所述像素电极上形成第二钝化层，所述第二钝化层设有第二通孔，所述微发光二极管通过所述第二通孔与所述像素电极连接。\n\n[0081]在一种实施例中，在步骤43之前，所述微发光二极管显示面板制备方法还包括：\n\n[0082]步骤44、在所述像素电极上形成金属电极，所述微发光二极管通过所述第二通孔、金属电极与所述像素电极连接。\n\n[0083]在一种实施例中，在步骤42之后，所述微发光二极管显示面板制备方法还包括：\n\n[0084]步骤45、在所述遮光层上形成第三钝化层，所述第三钝化层覆盖所述遮光层和部分第二钝化层。\n\n[0085]现以薄膜晶体管为金属氧化物半导体薄膜晶体管、微发光二极管为水平结构的微发光二极管为例，对本发明提供的微发光二极管显示面板制备方法进行描述。\n\n[0086]如图2至图24所示，本发明实施例提供的微发光二极管显示面板制备方法包括以下步骤：\n\n[0087]如图2所示，提供一基板101。\n\n[0088]基板101可以是玻璃基板、柔性基板等，并进行清洗等处理。\n\n[0089]如图3所示，在基板101上沉积缓冲层102。\n\n[0090]缓冲层102的材料可以为氧化硅、氮化硅/氧化硅叠层，氧化铝/氧化硅叠层等。\n\n[0091]如图4所示，在缓冲层102上沉积金属氧化物半导体膜层103。\n\n[0092]金属氧化物半导体膜层103的材料可以是氧化铟镓锌、氧化铟锌、氧化铟镓、氧化铟镓钛、氧化铟镓锌钛等。\n\n[0093]如图5所示，对金属氧化物半导体膜层103进行处理，形成有源层21。\n\n[0094]有源层21包括N掺杂区和P掺杂区、以及位于N掺杂区和P掺杂区之间的沟道区。\n\n[0095]如图6所示，在缓冲层102和有源层21上沉积绝缘层104和金属层105。\n\n[0096]绝缘层104的材料可以为氧化硅、氮化硅/氧化硅叠层，氧化铝/氧化硅叠层等，第一金属层105的材料可以为铜钼叠层、铜钼钛叠层、铜钛叠层，铝钼叠层，铜铌合金等。\n\n[0097]如图7所示，对绝缘层104进行图案化处理，形成栅绝缘层22，对金属层105进行图案化处理，形成栅极23。\n\n[0098]如图8所示，在缓冲层102、有源层21、栅绝缘层22、栅极23上沉积中间电介质层106。\n\n[0099]中间电介质层106的材料可以为氧化硅、氮化硅/氧化硅叠层等。\n\n[0100]如图9所示，对中间电介质层106图案化处理，形成对应N掺杂区和P掺杂区的开孔。\n\n[0101]如图10所示，在中间电介质层106上金属层107。\n\n[0102]金属层107的材料可以为铜钼叠层、铜钼钛叠层、铜钛叠层，铝钼叠层，铜铌合金等。\n\n[0103]如图11所示，对金属层107进行图案化处理，形成源极24、漏极25以及连接电极26。\n\n[0104]如图12所示，在中间电介质层106、源极24、漏极25以及连接电极26上沉积第一钝化层108。\n\n[0105]第一钝化层108的材料可以为氧化硅、氮化硅、氮化硅/氧化硅叠层。\n\n[0106]如图13所示，对第一钝化层108图案化处理，形成对应漏极25以及连接电极26的第一通孔a。\n\n[0107]如图14所示，在第一钝化层108上沉积透明导电层109及金属层110。\n\n[0108]透明导电层109的材料可以为氧化铟锡、氧化铟锌、氧化铝锌等，金属层110的材料可以是铜钼叠层、铜钼钛叠层、铜钛叠层，铝钼叠层，铜铌合金、镍铬合金等。\n\n[0109]如图15所示，对透明导电层109进行图案化处理，形成像素电极31和透明公共电极33，对金属层110进行图案化处理，形成金属电极32和金属公共电极34。\n\n[0110]像素电极31通过第一通孔a连接漏极25，透明公共电极33通过第一通孔a与连接电极26连接。\n\n[0111]如图16所示，在第一钝化层108、金属电极32和金属公共电极34上沉积第二钝化层111。\n\n[0112]第二钝化层111的材料可以为氧化硅、氮化硅、氧化铝、氧化硅/氧化硅叠层等。\n\n[0113]如图17所示，对第二钝化层111进行图案化处理，保留覆盖金属电极32和金属公共电极34的区域。\n\n[0114]如图18所示，在第一钝化层108、第二钝化层111上沉积遮光层112。\n\n[0115]遮光层112的材料可以是黑色光阻、不透明金属等。\n\n[0116]如图19所示，对遮光层112进行图案化处理，保留覆盖有源层21、栅绝缘层22、栅极23、源极24和漏极25的区域。\n\n[0117]如图20所示，在第一钝化层108、第二钝化层111、遮光层112上沉积第三钝化层113。\n\n[0118]第三钝化层113的材料可以为氧化硅、氮化硅、氧化铝、氧化硅/氧化硅叠层等。\n\n[0119]如图21所示，对第三钝化层113进行图案化处理，保留覆盖遮光层112的区域。\n\n[0120]如图22所示，对第二钝化层111进行图案化挖孔，形成对应金属电极32和金属公共电极34的第二通孔b。\n\n[0121]如图23所示，进行微发光二极管4的绑定。\n\n[0122]将微发光二极管4的第一电极通过第二通孔b与金属电极32连接，将微发光二极管4的第二电极通过第二通孔b与金属公共电极32连接。\n\n[0123]如图24所示，在第一钝化层108、第二钝化层111、微发光二极管4上沉积透明的封装膜114。\n\n[0124]封装膜114可以为有机/无机交替沉积的隔水氧及机械碰撞保护膜等。\n\n[0125]现结合图25至图29对本发明的其他实现方式进行描述。\n\n[0126]在图25至图29所示的微发光二极管显示面板中，相同标号所对应的膜层以及构件名称与图1所示的微发光二极管显示面板一致。\n\n[0127]在一种实施例中，如图25所示，所述遮光层112设置在所述第一钝化层108上；所述像素电极31在所述遮光层112上，所述像素电极31通过贯穿所述遮光层112和所述第一钝化层108的通孔c，与所述漏极25连接。\n\n[0128]为了得到图25所示的微发光二极管显示面板，本发明提供的微发光二极管显示面板制备方法包括以下步骤：\n\n[0129]提供一基板101；\n\n[0130]在所述基板101上依次形成有源层21、栅绝缘层22、栅极23、源极24和漏极25；\n\n[0131]在所述基板101上形成第一钝化层108，所述第一钝化层覆盖所述源极24和漏极25；\n\n[0132]在所述第一钝化层108上形成遮光层112；\n\n[0133]对所述第一钝化层108、以及遮光层112进行处理，形成第三通孔c；\n\n[0134]在所述遮光层112形成像素电极31，所述像素电极通过所述第三通孔c(包括第一钝化层108形成的第一通孔)连接所述漏极或者所述源极；\n\n[0135]在所述基板上设置微发光二极管，所述微发光二极管与所述像素电极连接。\n\n[0136]在一种实施例中，如图26所示，所述微发光二极管显示面板还包括第三钝化层113，第三钝化层113设置在遮光层112上；所述像素电极31在所述第三钝化层113上，所述像素电极31通过贯穿所述第三钝化层113、遮光层112和所述第一钝化层108的通孔d，与所述漏极25连接。\n\n[0137]为了得到图26所示的微发光二极管显示面板，本发明提供的微发光二极管显示面板制备方法包括以下步骤：\n\n[0138]提供一基板101；\n\n[0139]在所述基板101上依次形成有源层21、栅绝缘层22、栅极23、源极24和漏极25；\n\n[0140]在所述基板101上形成第一钝化层108，所述第一钝化层覆盖所述源极24和漏极25；\n\n[0141]在所述第一钝化层108上形成遮光层112；\n\n[0142]在所述遮光层112上形成第三钝化层113；\n\n[0143]对所述第一钝化层108、第三钝化层113以及遮光层112进行处理，形成第四通孔d；\n\n[0144]在所述遮光层112形成像素电极31，所述像素电极通过所述第四通孔d(包括第一钝化层108形成的第一通孔)连接所述漏极或者所述源极；\n\n[0145]在所述基板上设置微发光二极管，所述微发光二极管与所述像素电极连接。\n\n[0146]在一种实施例中，如图27所示，所述遮光层112设置在所述第一钝化层108和第二钝化层111上；所述微发光二极管4通过贯穿所述遮光层112和所述第二钝化层111的第五通孔e，与所述像素电极31连接。\n\n[0147]为了得到图27所示的微发光二极管显示面板，本发明提供的微发光二极管显示面板制备方法包括以下步骤：\n\n[0148]提供一基板101；\n\n[0149]在所述基板101上依次形成有源层21、栅绝缘层22、栅极23、源极24和漏极25；\n\n[0150]在所述基板101上形成第一钝化层108，所述第一钝化层覆盖所述源极24和漏极25；第一钝化层108形成有第一通孔a；\n\n[0151]在所述第一钝化层108上形成像素电极31；\n\n[0152]在所述像素电极31上形成遮光层112；\n\n[0153]对所述遮光层112进行处理，形成第五通孔e；\n\n[0154]在所述遮光层112上设置微发光二极管4，所述微发光二极管通过第五通孔e与所述像素电极31连接。\n\n[0155]在一种实施例中，如图28所示，所述遮光层112设置在所述第一钝化层108和第二钝化层111上，所述遮光层112在所述像素电极31的部分区域内形成凹槽；所述微发光二极管4设置在所述凹槽内，通过贯穿所述遮光层112和所述第二钝化层111的第五通孔e，与所述像素电极31连接。\n\n[0156]为了得到图27所示的微发光二极管显示面板，本发明提供的微发光二极管显示面板制备方法包括以下步骤：\n\n[0157]提供一基板101；\n\n[0158]在所述基板101上依次形成有源层21、栅绝缘层22、栅极23、源极24和漏极25；\n\n[0159]在所述基板101上形成第一钝化层108，所述第一钝化层覆盖所述源极24和漏极25；第一钝化层108形成有第一通孔a；\n\n[0160]在所述第一钝化层108上形成像素电极31；\n\n[0161]在所述像素电极31上形成遮光层112；\n\n[0162]对所述遮光层112进行处理，形成凹槽以及第五通孔e；\n\n[0163]在所述遮光层112的凹槽内设置微发光二极管4，所述微发光二极管通过第五通孔e与所述像素电极31连接。\n\n[0164]在一种实施例中，如图29所示，所述微发光二极管显示面板还包括第三钝化层113，所述第三钝化层113设置在所述遮光层112上；所述微发光二极管4通过贯穿所述第三钝化层113、所述遮光层112和所述第二钝化层111的第六通孔f，与所述像素电极31连接。\n\n[0165]为了得到图29所示的微发光二极管显示面板，本发明提供的微发光二极管显示面板制备方法包括以下步骤：\n\n[0166]提供一基板101；\n\n[0167]在所述基板101上依次形成有源层21、栅绝缘层22、栅极23、源极24和漏极25；\n\n[0168]在所述基板101上形成第一钝化层108，所述第一钝化层覆盖所述源极24和漏极25；第一钝化层108形成有第一通孔a；\n\n[0169]在所述第一钝化层108上形成像素电极31；\n\n[0170]在所述像素电极31上形成遮光层112；\n\n[0171]在所述遮光层112上形成第三钝化层113；\n\n[0172]对所述遮光层112以及所述第三钝化层113进行处理，形成第六通孔f；\n\n[0173]在所述遮光层112上设置微发光二极管4，所述微发光二极管通过第六通孔f与所述像素电极31连接。\n\n[0174]同时，本发明还提供一种显示装置，包括一微发光二极管显示面板，该微发光二极管显示面板包括：\n\n[0175]基板；\n\n[0176]设置在所述基板上的有源层、栅绝缘层、栅极、源极和漏极；\n\n[0177]覆盖所述源极和所述漏极的第一钝化层，所述第一钝化层上设有第一通孔；\n\n[0178]像素电极，所述像素电极通过所述第一通孔连接所述漏极或者所述源极；\n\n[0179]遮光层，所述遮光层覆盖所述有源层、栅绝缘层、栅极、源极和漏极；\n\n[0180]微发光二极管，所述微发光二极管与所述像素电极连接。\n\n[0181]在一种实施例中，在本发明提供的显示装置中，所述微发光二极管显示面板还包括：第二钝化层，所述第二钝化层设置在所述像素电极上；所述第二钝化层设有第二通孔，所述微发光二极管通过所述第二通孔与所述像素电极连接。\n\n[0182]在一种实施例中，在本发明提供的显示装置中，所述微发光二极管显示面板还包括：金属电极，所述金属电极设置在所述像素电极上；所述微发光二极管通过所述第二通孔、金属电极与所述像素电极连接。\n\n[0183]在一种实施例中，在本发明提供的显示装置中，所述微发光二极管显示面板还包括：第三钝化层，所述第三钝化层设置在所述遮光层上；所述第三钝化层覆盖所述遮光层和部分所述第二钝化层。\n\n[0184]在一种实施例中，在本发明提供的显示装置中：所述像素电极在所述基板上的投影，与所述源极或者所述漏极在所述基板上的投影部分重合；所述遮光层覆盖部分所述第二钝化层。\n\n[0185]在一种实施例中，在本发明提供的显示装置中，所述遮光层的材料为黑色光阻。\n\n[0186]根据上述实施例可知：\n\n[0187]本发明提供一种微发光二极管显示面板及制备方法，该微发光二极管显示面板包括形成薄膜晶体管的有源层、栅绝缘层、栅极、源极和漏极，像素电极、微发光二极管、以及覆盖有源层、栅绝缘层、栅极、源极和漏极的遮光层，基于该遮光层，阻挡了微发光二极管所发出的光线照射到薄膜晶体管，减小了微发光二极管发光对薄膜晶体管的影响，降低了微发光二极管照射薄膜晶体管导致的阈值Vth漂移，进而降低了光漏电流，缓解了现有微发光二极管显示面板存在的微发光二极管发光引起薄膜晶体管阈值偏移的技术问题，同时降低非开启时薄膜晶体管的漏电流，提高亮暗态对比度。\n\n[0188]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管显示面板及制备方法。\n\n背景技术\n\n[0002]微发光二极管(Micro LED)显示面板是一种以在一个基板上集成的高密度微小尺寸的发光二极管(LED)阵列作为显示像素来实现图像显示的显示装置，微发光二极管(Micro LED)显示面板属于自发光显示器。\n\n[0003]由于微发光二极管所发的光为全方位的，阵列基板内的薄膜晶体管(TFT)会受到微发光二极管所发出的短波段光照射而产生阈值(Vth)漂移，进而导致光漏电流变大而影响显示效果。\n\n[0004]即，现有微发光二极管显示面板存在微发光二极管发光引起薄膜晶体管阈值偏移的技术问题，需要改进。\n\n发明内容\n\n[0005]本发明提供一种微发光二极管显示面板及制备方法，以缓解现有微发光二极管显示面板存在微发光二极管发光引起薄膜晶体管阈值偏移的技术问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明实施例提供一种微发光二极管显示面板制备方法，其包括：\n\n[0008]提供一基板；\n\n[0009]在所述基板上依次形成有源层、栅绝缘层、栅极、源极和漏极；\n\n[0010]在所述基板上形成第一钝化层，所述第一钝化层覆盖所述源极和漏极；所述第一钝化层上设有第一通孔；\n\n[0011]在所述基板上形成像素电极，所述像素电极通过所述第一通孔连接所述漏极或者所述源极；\n\n[0012]在所述基板上形成遮光层，所述遮光层覆盖所述有源层、栅绝缘层、栅极、源极和漏极；\n\n[0013]在所述基板上设置微发光二极管，所述微发光二极管与所述像素电极连接。\n\n[0014]在本发明实施例提供的微发光二极管显示面板制备方法中，在所述基板上形成遮光层的步骤之前，所述微发光二极管显示面板制备方法还包括：\n\n[0015]在所述像素电极上形成第二钝化层，所述第二钝化层设有第二通孔，所述微发光二极管通过所述第二通孔与所述像素电极连接。\n\n[0016]在本发明实施例提供的微发光二极管显示面板制备方法中，在所述像素电极上形成第二钝化层的步骤之前，所述微发光二极管显示面板制备方法还包括：\n\n[0017]在所述像素电极上形成金属电极，所述微发光二极管通过所述第二通孔、金属电极与所述像素电极连接。\n\n[0018]在本发明实施例提供的微发光二极管显示面板制备方法中，在所述基板上形成遮光层的步骤之后，所述微发光二极管显示面板制备方法还包括：\n\n[0019]在所述遮光层上形成第三钝化层，所述第三钝化层覆盖所述遮光层和部分第二钝化层。\n\n[0020]同时，本发明实施例还提供一种微发光二极管显示面板，其包括：\n\n[0021]基板；\n\n[0022]设置在所述基板上的有源层、栅绝缘层、栅极、源极和漏极；\n\n[0023]覆盖所述源极和所述漏极的第一钝化层，所述第一钝化层上设有第一通孔；\n\n[0024]像素电极，所述像素电极通过所述第一通孔连接所述漏极或者所述源极；\n\n[0025]遮光层，所述遮光层覆盖所述有源层、栅绝缘层、栅极、源极和漏极；\n\n[0026]微发光二极管，所述微发光二极管与所述像素电极连接。\n\n[0027]在本发明提供的微发光二极管显示面板中，所述微发光二极管显示面板还包括：第二钝化层，所述第二钝化层设置在所述像素电极上；所述第二钝化层设有第二通孔，所述微发光二极管通过所述第二通孔与所述像素电极连接。\n\n[0028]在本发明提供的微发光二极管显示面板中，所述微发光二极管显示面板还包括：金属电极，所述金属电极设置在所述像素电极上；所述微发光二极管通过所述第二通孔、金属电极与所述像素电极连接。\n\n[0029]在本发明提供的微发光二极管显示面板中，所述微发光二极管显示面板还包括：第三钝化层，所述第三钝化层设置在所述遮光层上；所述第三钝化层覆盖所述遮光层和部分所述第二钝化层。\n\n[0030]在本发明提供的微发光二极管显示面板中：所述像素电极在所述基板上的投影，与所述源极或者所述漏极在所述基板上的投影部分重合；所述遮光层覆盖部分所述第二钝化层。\n\n[0031]在本发明提供的微发光二极管显示面板中，所述遮光层的材料为黑色光阻。\n\n[0032]本发明的有益效果为：本发明提供一种微发光二极管显示面板及制备方法，该微发光二极管显示面板包括形成薄膜晶体管的有源层、栅绝缘层、栅极、源极和漏极，像素电极、微发光二极管、以及覆盖有源层、栅绝缘层、栅极、源极和漏极的遮光层，基于该遮光层，阻挡了微发光二极管所发出的光线照射到薄膜晶体管，减小了微发光二极管发光对薄膜晶体管的影响，降低了微发光二极管照射薄膜晶体管导致的阈值Vth漂移，进而降低了光漏电流，缓解了现有微发光二极管显示面板存在的微发光二极管发光引起薄膜晶体管阈值偏移的技术问题，同时降低非开启时薄膜晶体管的漏电流，提高亮暗态对比度。\n\n附图说明\n\n[0033]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0034]图1为本发明微发光二极管显示面板的第一种结构示意图；\n\n[0035]图2至图24为本发明微发光二极管显示面板制备方法的流程示意图；\n\n[0036]图25为本发明微发光二极管显示面板的第二种结构示意图；\n\n[0037]图26为本发明微发光二极管显示面板的第三种结构示意图；\n\n[0038]图27为本发明微发光二极管显示面板的第四种结构示意图；\n\n[0039]图28为本发明微发光二极管显示面板的第五种结构示意图；\n\n[0040]图29为本发明微发光二极管显示面板的第六种结构示意图。\n\n具体实施方式\n\n[0041]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0042]针对现有微发光二极管显示面板存在的微发光二极管发光引起薄膜晶体管阈值偏移的技术问题，本发明实施例可以缓解。\n\n[0043]如图1所示，本发明提供的微发光二极管显示面板包括：\n\n[0044]基板101；基板101可以是玻璃或者柔性衬底等；\n\n[0045]设置在所述基板101上的有源层21、栅绝缘层22、栅极23、源极24和漏极25；有源层21、栅绝缘层22、栅极23、源极24和漏极25形成薄膜晶体管；\n\n[0046]覆盖所述源极24和所述漏极25的第一钝化层108，所述第一钝化层108上设有第一通孔a；\n\n[0047]像素电极31，所述像素电极31通过所述第一通孔连接所述漏极25或者所述源极24；在薄膜晶体管为N型薄膜晶体管时，像素电极31通过所述第一通孔连接所述漏极25，在薄膜晶体管为P型薄膜晶体管时，像素电极31通过所述第一通孔连接所述漏极25；\n\n[0048]遮光层112，所述遮光层112覆盖所述有源层21、栅绝缘层22、栅极23、源极24和漏极25；\n\n[0049]微发光二极管4，所述微发光二极管与所述像素电极连接。\n\n[0050]本实施例提供了一种微发光二极管显示面板，该微发光二极管显示面板包括形成薄膜晶体管的有源层、栅绝缘层、栅极、源极和漏极，像素电极、微发光二极管、以及覆盖有源层、栅绝缘层、栅极、源极和漏极的遮光层；基于该遮光层，阻挡了微发光二极管所发出的光线照射到薄膜晶体管，减小了微发光二极管发光对薄膜晶体管的影响。\n\n[0051]在一种实施例中，若像素电极的电位为正时，像素电极31通过所述第一通孔连接所述漏极25，若像素电极的电位为负时，像素电极31通过所述第一通孔连接所述源极24。\n\n[0052]在一种实施例中，如图1所示，所述微发光二极管显示面板还包括：第二钝化层111，所述第二钝化层111设置在所述像素电极31上；所述第二钝化层111设有第二通孔b，所述微发光二极管4通过所述第二通孔与所述像素电极31连接。\n\n[0053]在一种实施例中，如图1所示，所述微发光二极管显示面板还包括：金属电极32，所述金属电极32设置在所述像素电极31上；所述微发光二极管4通过所述第二通孔b、金属电极32与所述像素电极31连接。\n\n[0054]在一种实施例中，如图1所示，所述微发光二极管显示面板还包括：第三钝化层113，所述第三钝化层113设置在所述遮光层112上；所述第三钝化层113覆盖所述遮光层112和部分所述第二钝化层111。\n\n[0055]在一种实施例中，如图1所示，所述像素电极31在所述基板101上的投影，与所述源极或者所述漏极在所述基板上的投影部分重合；所述遮光层112覆盖部分所述第二钝化层111。\n\n[0056]微发光二极管4按照结构不同，可分为垂直结构的微发光二极管和水平结构的微发光二极管，垂直结构的微发光二极管的第一电极和第二电极分别位于微发光二极管的上下两侧，水平的结构的微发光二极管的第一电极和第二电极均位于微发光二极管的下侧。\n\n[0057]在一种实施例中，所述微发光二极管4为水平结构的微发光二极管，所述微发光二极管显示面板还包括：用于连接公共电压的连接电极26、透明公共电极33，透明公共电极33通过所述第一通孔连接所述连接电极26；所述微发光二极管4的第一电极连接像素电极31，第二电极连接透明公共电极33。\n\n[0058]在一种实施例中，如图1所示，所述第二钝化层111还设置在所述透明公共电极33上；所述微发光二极管4的第二电极通过所述第二通孔连接透明公共电极33。\n\n[0059]在一种实施例中，如图1所示，所述微发光二极管显示面板还包括：金属公共电极34，设置在所述透明公共电极33上，所述微发光二极管4的第二电极通过第二过孔、金属公共电极34连接透明公共电极33。\n\n[0060]在一种实施例中，所述微发光二极管4为倒装的水平结构微发光二极管，以提高出光效率。\n\n[0061]在一种实施例中，所述微发光二极管4为垂直结构的微发光二极管，所述微发光二极管显示面板还包括：透明公共电极层，所述微发光二极管4的第一电极连接像素电极31，第二电极连接透明公共电极层。\n\n[0062]在一种实施例中，薄膜晶体管包括驱动薄膜晶体管、开关薄膜晶体管、感测薄膜晶体管等；驱动薄膜晶体管包括金属氧化物半导体薄膜晶体管等，开关薄膜晶体管包括低温多晶硅薄膜晶体管等。\n\n[0063]在一种实施例中，微发光二极管显示基板包括阵列排布的子像素单元，一个子像素单元包括一个微发光二极管4，以及至少一个驱动薄膜晶体管，微发光二极管4在驱动薄膜晶体管的驱动下发光。\n\n[0064]在一种实施例中，像素电极31和透明公共电极33的材料可以是氧化铟锡、氧化铟锌、氧化铝锌等。\n\n[0065]在一种实施例中，金属电极32和金属公共电极34的材料可以是铜钼叠层、铜钼钛叠层、铜钛叠层，铝钼叠层，铜铌合金、镍铬合金等。\n\n[0066]在一种实施例中，所述遮光层112的材料是黑色光阻。\n\n[0067]在一种实施例中，如图1所示，所述微发光二极管显示面板还包括：缓冲层102，设置在所述基板101上，所述有源层21、栅绝缘层22、栅极23、源极24和漏极25设置在所述缓冲层102上。\n\n[0068]在一种实施例中，如图1所示，所述微发光二极管显示面板还包括：中间电介质层106，设置在所述栅极23上，所述源极24和漏极25设置在所述中间电介质层106上。\n\n[0069]在一种实施例中，如图1所示，所述微发光二极管显示面板还包括：封装膜114，封装膜可以为有机/无机交替沉积的隔水氧及机械碰撞保护膜，用于封装微发光二极管4。\n\n[0070]为了制备得到图1所示的微发光二极管显示面板，本发明实施例也提供了一种微发光二极管显示面板制备方法，其包括以下步骤：\n\n[0071]步骤1、提供一基板；\n\n[0072]步骤2、在所述基板上依次形成有源层、栅绝缘层、栅极、源极和漏极；\n\n[0073]步骤3、在所述基板上形成第一钝化层，所述第一钝化层覆盖所述源极和漏极；所述第一钝化层上设有第一通孔；\n\n[0074]步骤4、在所述基板上形成像素电极和遮光层，所述像素电极通过所述第一通孔连接所述漏极或者所述源极，所述遮光层覆盖所述有源层、栅绝缘层、栅极、源极和漏极；\n\n[0075]步骤5、在所述基板上设置微发光二极管，所述微发光二极管与所述像素电极连接。\n\n[0076]在一种实施例中，步骤4包括：\n\n[0077]步骤41、在所述基板上形成像素电极，所述像素电极通过所述第一通孔连接所述漏极或者所述源极；\n\n[0078]步骤42、在所述基板上形成遮光层，所述遮光层覆盖所述有源层、栅绝缘层、栅极、源极和漏极。\n\n[0079]在一种实施例中，在步骤42之前，所述微发光二极管显示面板制备方法还包括：\n\n[0080]步骤43、在所述像素电极上形成第二钝化层，所述第二钝化层设有第二通孔，所述微发光二极管通过所述第二通孔与所述像素电极连接。\n\n[0081]在一种实施例中，在步骤43之前，所述微发光二极管显示面板制备方法还包括：\n\n[0082]步骤44、在所述像素电极上形成金属电极，所述微发光二极管通过所述第二通孔、金属电极与所述像素电极连接。\n\n[0083]在一种实施例中，在步骤42之后，所述微发光二极管显示面板制备方法还包括：\n\n[0084]步骤45、在所述遮光层上形成第三钝化层，所述第三钝化层覆盖所述遮光层和部分第二钝化层。\n\n[0085]现以薄膜晶体管为金属氧化物半导体薄膜晶体管、微发光二极管为水平结构的微发光二极管为例，对本发明提供的微发光二极管显示面板制备方法进行描述。\n\n[0086]如图2至图24所示，本发明实施例提供的微发光二极管显示面板制备方法包括以下步骤：\n\n[0087]如图2所示，提供一基板101。\n\n[0088]基板101可以是玻璃基板、柔性基板等，并进行清洗等处理。\n\n[0089]如图3所示，在基板101上沉积缓冲层102。\n\n[0090]缓冲层102的材料可以为氧化硅、氮化硅/氧化硅叠层，氧化铝/氧化硅叠层等。\n\n[0091]如图4所示，在缓冲层102上沉积金属氧化物半导体膜层103。\n\n[0092]金属氧化物半导体膜层103的材料可以是氧化铟镓锌、氧化铟锌、氧化铟镓、氧化铟镓钛、氧化铟镓锌钛等。\n\n[0093]如图5所示，对金属氧化物半导体膜层103进行处理，形成有源层21。\n\n[0094]有源层21包括N掺杂区和P掺杂区、以及位于N掺杂区和P掺杂区之间的沟道区。\n\n[0095]如图6所示，在缓冲层102和有源层21上沉积绝缘层104和金属层105。\n\n[0096]绝缘层104的材料可以为氧化硅、氮化硅/氧化硅叠层，氧化铝/氧化硅叠层等，第一金属层105的材料可以为铜钼叠层、铜钼钛叠层、铜钛叠层，铝钼叠层，铜铌合金等。\n\n[0097]如图7所示，对绝缘层104进行图案化处理，形成栅绝缘层22，对金属层105进行图案化处理，形成栅极23。\n\n[0098]如图8所示，在缓冲层102、有源层21、栅绝缘层22、栅极23上沉积中间电介质层106。\n\n[0099]中间电介质层106的材料可以为氧化硅、氮化硅/氧化硅叠层等。\n\n[0100]如图9所示，对中间电介质层106图案化处理，形成对应N掺杂区和P掺杂区的开孔。\n\n[0101]如图10所示，在中间电介质层106上金属层107。\n\n[0102]金属层107的材料可以为铜钼叠层、铜钼钛叠层、铜钛叠层，铝钼叠层，铜铌合金等。\n\n[0103]如图11所示，对金属层107进行图案化处理，形成源极24、漏极25以及连接电极26。\n\n[0104]如图12所示，在中间电介质层106、源极24、漏极25以及连接电极26上沉积第一钝化层108。\n\n[0105]第一钝化层108的材料可以为氧化硅、氮化硅、氮化硅/氧化硅叠层。\n\n[0106]如图13所示，对第一钝化层108图案化处理，形成对应漏极25以及连接电极26的第一通孔a。\n\n[0107]如图14所示，在第一钝化层108上沉积透明导电层109及金属层110。\n\n[0108]透明导电层109的材料可以为氧化铟锡、氧化铟锌、氧化铝锌等，金属层110的材料可以是铜钼叠层、铜钼钛叠层、铜钛叠层，铝钼叠层，铜铌合金、镍铬合金等。\n\n[0109]如图15所示，对透明导电层109进行图案化处理，形成像素电极31和透明公共电极33，对金属层110进行图案化处理，形成金属电极32和金属公共电极34。\n\n[0110]像素电极31通过第一通孔a连接漏极25，透明公共电极33通过第一通孔a与连接电极26连接。\n\n[0111]如图16所示，在第一钝化层108、金属电极32和金属公共电极34上沉积第二钝化层111。\n\n[0112]第二钝化层111的材料可以为氧化硅、氮化硅、氧化铝、氧化硅/氧化硅叠层等。\n\n[0113]如图17所示，对第二钝化层111进行图案化处理，保留覆盖金属电极32和金属公共电极34的区域。\n\n[0114]如图18所示，在第一钝化层108、第二钝化层111上沉积遮光层112。\n\n[0115]遮光层112的材料可以是黑色光阻、不透明金属等。\n\n[0116]如图19所示，对遮光层112进行图案化处理，保留覆盖有源层21、栅绝缘层22、栅极23、源极24和漏极25的区域。\n\n[0117]如图20所示，在第一钝化层108、第二钝化层111、遮光层112上沉积第三钝化层113。\n\n[0118]第三钝化层113的材料可以为氧化硅、氮化硅、氧化铝、氧化硅/氧化硅叠层等。\n\n[0119]如图21所示，对第三钝化层113进行图案化处理，保留覆盖遮光层112的区域。\n\n[0120]如图22所示，对第二钝化层111进行图案化挖孔，形成对应金属电极32和金属公共电极34的第二通孔b。\n\n[0121]如图23所示，进行微发光二极管4的绑定。\n\n[0122]将微发光二极管4的第一电极通过第二通孔b与金属电极32连接，将微发光二极管4的第二电极通过第二通孔b与金属公共电极32连接。\n\n[0123]如图24所示，在第一钝化层108、第二钝化层111、微发光二极管4上沉积透明的封装膜114。\n\n[0124]封装膜114可以为有机/无机交替沉积的隔水氧及机械碰撞保护膜等。\n\n[0125]现结合图25至图29对本发明的其他实现方式进行描述。\n\n[0126]在图25至图29所示的微发光二极管显示面板中，相同标号所对应的膜层以及构件名称与图1所示的微发光二极管显示面板一致。\n\n[0127]在一种实施例中，如图25所示，所述遮光层112设置在所述第一钝化层108上；所述像素电极31在所述遮光层112上，所述像素电极31通过贯穿所述遮光层112和所述第一钝化层108的通孔c，与所述漏极25连接。\n\n[0128]为了得到图25所示的微发光二极管显示面板，本发明提供的微发光二极管显示面板制备方法包括以下步骤：\n\n[0129]提供一基板101；\n\n[0130]在所述基板101上依次形成有源层21、栅绝缘层22、栅极23、源极24和漏极25；\n\n[0131]在所述基板101上形成第一钝化层108，所述第一钝化层覆盖所述源极24和漏极25；\n\n[0132]在所述第一钝化层108上形成遮光层112；\n\n[0133]对所述第一钝化层108、以及遮光层112进行处理，形成第三通孔c；\n\n[0134]在所述遮光层112形成像素电极31，所述像素电极通过所述第三通孔c(包括第一钝化层108形成的第一通孔)连接所述漏极或者所述源极；\n\n[0135]在所述基板上设置微发光二极管，所述微发光二极管与所述像素电极连接。\n\n[0136]在一种实施例中，如图26所示，所述微发光二极管显示面板还包括第三钝化层113，第三钝化层113设置在遮光层112上；所述像素电极31在所述第三钝化层113上，所述像素电极31通过贯穿所述第三钝化层113、遮光层112和所述第一钝化层108的通孔d，与所述漏极25连接。\n\n[0137]为了得到图26所示的微发光二极管显示面板，本发明提供的微发光二极管显示面板制备方法包括以下步骤：\n\n[0138]提供一基板101；\n\n[0139]在所述基板101上依次形成有源层21、栅绝缘层22、栅极23、源极24和漏极25；\n\n[0140]在所述基板101上形成第一钝化层108，所述第一钝化层覆盖所述源极24和漏极25；\n\n[0141]在所述第一钝化层108上形成遮光层112；\n\n[0142]在所述遮光层112上形成第三钝化层113；\n\n[0143]对所述第一钝化层108、第三钝化层113以及遮光层112进行处理，形成第四通孔d；\n\n[0144]在所述遮光层112形成像素电极31，所述像素电极通过所述第四通孔d(包括第一钝化层108形成的第一通孔)连接所述漏极或者所述源极；\n\n[0145]在所述基板上设置微发光二极管，所述微发光二极管与所述像素电极连接。\n\n[0146]在一种实施例中，如图27所示，所述遮光层112设置在所述第一钝化层108和第二钝化层111上；所述微发光二极管4通过贯穿所述遮光层112和所述第二钝化层111的第五通孔e，与所述像素电极31连接。\n\n[0147]为了得到图27所示的微发光二极管显示面板，本发明提供的微发光二极管显示面板制备方法包括以下步骤：\n\n[0148]提供一基板101；\n\n[0149]在所述基板101上依次形成有源层21、栅绝缘层22、栅极23、源极24和漏极25；\n\n[0150]在所述基板101上形成第一钝化层108，所述第一钝化层覆盖所述源极24和漏极25；第一钝化层108形成有第一通孔a；\n\n[0151]在所述第一钝化层108上形成像素电极31；\n\n[0152]在所述像素电极31上形成遮光层112；\n\n[0153]对所述遮光层112进行处理，形成第五通孔e；\n\n[0154]在所述遮光层112上设置微发光二极管4，所述微发光二极管通过第五通孔e与所述像素电极31连接。\n\n[0155]在一种实施例中，如图28所示，所述遮光层112设置在所述第一钝化层108和第二钝化层111上，所述遮光层112在所述像素电极31的部分区域内形成凹槽；所述微发光二极管4设置在所述凹槽内，通过贯穿所述遮光层112和所述第二钝化层111的第五通孔e，与所述像素电极31连接。\n\n[0156]为了得到图27所示的微发光二极管显示面板，本发明提供的微发光二极管显示面板制备方法包括以下步骤：\n\n[0157]提供一基板101；\n\n[0158]在所述基板101上依次形成有源层21、栅绝缘层22、栅极23、源极24和漏极25；\n\n[0159]在所述基板101上形成第一钝化层108，所述第一钝化层覆盖所述源极24和漏极25；第一钝化层108形成有第一通孔a；\n\n[0160]在所述第一钝化层108上形成像素电极31；\n\n[0161]在所述像素电极31上形成遮光层112；\n\n[0162]对所述遮光层112进行处理，形成凹槽以及第五通孔e；\n\n[0163]在所述遮光层112的凹槽内设置微发光二极管4，所述微发光二极管通过第五通孔e与所述像素电极31连接。\n\n[0164]在一种实施例中，如图29所示，所述微发光二极管显示面板还包括第三钝化层113，所述第三钝化层113设置在所述遮光层112上；所述微发光二极管4通过贯穿所述第三钝化层113、所述遮光层112和所述第二钝化层111的第六通孔f，与所述像素电极31连接。\n\n[0165]为了得到图29所示的微发光二极管显示面板，本发明提供的微发光二极管显示面板制备方法包括以下步骤：\n\n[0166]提供一基板101；\n\n[0167]在所述基板101上依次形成有源层21、栅绝缘层22、栅极23、源极24和漏极25；\n\n[0168]在所述基板101上形成第一钝化层108，所述第一钝化层覆盖所述源极24和漏极25；第一钝化层108形成有第一通孔a；\n\n[0169]在所述第一钝化层108上形成像素电极31；\n\n[0170]在所述像素电极31上形成遮光层112；\n\n[0171]在所述遮光层112上形成第三钝化层113；\n\n[0172]对所述遮光层112以及所述第三钝化层113进行处理，形成第六通孔f；\n\n[0173]在所述遮光层112上设置微发光二极管4，所述微发光二极管通过第六通孔f与所述像素电极31连接。\n\n[0174]同时，本发明还提供一种显示装置，包括一微发光二极管显示面板，该微发光二极管显示面板包括：\n\n[0175]基板；\n\n[0176]设置在所述基板上的有源层、栅绝缘层、栅极、源极和漏极；\n\n[0177]覆盖所述源极和所述漏极的第一钝化层，所述第一钝化层上设有第一通孔；\n\n[0178]像素电极，所述像素电极通过所述第一通孔连接所述漏极或者所述源极；\n\n[0179]遮光层，所述遮光层覆盖所述有源层、栅绝缘层、栅极、源极和漏极；\n\n[0180]微发光二极管，所述微发光二极管与所述像素电极连接。\n\n[0181]在一种实施例中，在本发明提供的显示装置中，所述微发光二极管显示面板还包括：第二钝化层，所述第二钝化层设置在所述像素电极上；所述第二钝化层设有第二通孔，所述微发光二极管通过所述第二通孔与所述像素电极连接。\n\n[0182]在一种实施例中，在本发明提供的显示装置中，所述微发光二极管显示面板还包括：金属电极，所述金属电极设置在所述像素电极上；所述微发光二极管通过所述第二通孔、金属电极与所述像素电极连接。\n\n[0183]在一种实施例中，在本发明提供的显示装置中，所述微发光二极管显示面板还包括：第三钝化层，所述第三钝化层设置在所述遮光层上；所述第三钝化层覆盖所述遮光层和部分所述第二钝化层。\n\n[0184]在一种实施例中，在本发明提供的显示装置中：所述像素电极在所述基板上的投影，与所述源极或者所述漏极在所述基板上的投影部分重合；所述遮光层覆盖部分所述第二钝化层。\n\n[0185]在一种实施例中，在本发明提供的显示装置中，所述遮光层的材料为黑色光阻。\n\n[0186]根据上述实施例可知：\n\n[0187]本发明提供一种微发光二极管显示面板及制备方法，该微发光二极管显示面板包括形成薄膜晶体管的有源层、栅绝缘层、栅极、源极和漏极，像素电极、微发光二极管、以及覆盖有源层、栅绝缘层、栅极、源极和漏极的遮光层，基于该遮光层，阻挡了微发光二极管所发出的光线照射到薄膜晶体管，减小了微发光二极管发光对薄膜晶体管的影响，降低了微发光二极管照射薄膜晶体管导致的阈值Vth漂移，进而降低了光漏电流，缓解了现有微发光二极管显示面板存在的微发光二极管发光引起薄膜晶体管阈值偏移的技术问题，同时降低非开启时薄膜晶体管的漏电流，提高亮暗态对比度。\n\n[0188]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10665, 23719, '技术领域\n\n[0001]本揭示涉及显示技术领域，尤其涉及一种显示面板及显示面板的制备方法。\n\n背景技术\n\n[0002]有机电致发光显示器件(Organic Light-Emitting Device，OLED)相对于液晶显示装置具有自发光、反应快、轻薄等优点，已成为显示领域的新兴技术。\n\n[0003]有机电致发光显示器件按照发光方式分为底发射和顶发射，底发射型显示器件中由于设计开口率的问题而无法满足市场高分辨率产品发展的需求，因此，顶发射OLED器件的使用范围更广。顶发射OLED具有高的分辨率、透明阴极以及光学效果等优点。现有的顶发射器件生产工艺流程中，采用整面镀膜的方法，这样更容易实现大尺寸的OLED屏，但是，在现有的顶发射器件产品中，阴极层制备完成后，其阻抗变得较大，不能满足使用要求，使得显示面板在显示时压降不理想，造成面板显示不均匀等问题。\n\n[0004]综上所述，现有的顶发射OLED显示面板在阴极层制备制程中，无法实现其阴极层在具有较高透过率的同时还具有较小的阻抗，使得显示面板在显示时显示不均匀。针对上述问题，需要提出进一步的完善和解决方案。\n\n发明内容\n\n[0005]本揭示提供一种显示面板及显示面板的制备方法，以解决现有的顶发射OLED面板中，无法满足在阴极层具有较高透过率的同时还具有较小的阻抗，显示面板显示不均匀等问题。\n\n[0006]为解决上述技术问题，本揭示实施例提供的技术方案如下：\n\n[0007]根据本揭示实施例的第一方面，提供了一种显示面板，包括：\n\n[0008]发光层；\n\n[0009]像素定义层，所述像素定义层与所述发光层间隔设置；\n\n[0010]封装层，所述封装层设置在所述发光层和所述像素定义层上；\n\n[0011]盖板，所述盖板设置在所述封装层上；\n\n[0012]其中，还包括辅助电极层，所述辅助电极层设置在所述封装层与所述盖板之间，且所述辅助电极层设置在所述显示面板的非开口区域内。\n\n[0013]根据本揭示一实施例，所述辅助电极层的材料为纳米银。\n\n[0014]根据本揭示一实施例，所述盖板为玻璃盖板或彩色滤光片。\n\n[0015]根据本揭示一实施例，所述辅助电极层的厚度为50纳米～1000纳米，所述辅助电极层的宽度为3微米～20微米。\n\n[0016]根据本揭示的第二方面，还提供了一种显示面板的制备方法，包括以下步骤，\n\n[0017]S100：在基板上制备薄膜晶体管的栅极层、源极层、漏极层，以及有源层和有机发光二极管的阳极层；\n\n[0018]S101：在步骤S100的基础上制备有机发光二极管器件层及像素定义层，并制备所述有机发光二极管的阴极层；\n\n[0019]S102：制备精密的辅助电极层，并将所述辅助电极层转印到所述有机发光二极管的非像素区域内；\n\n[0020]S103：转印完成后，封装所述显示面板。\n\n[0021]根据本揭示一实施例，所述步骤S101中，所述制备工艺为精密再生掩模板技术。\n\n[0022]根据本揭示一实施例，所述步骤S103中，所述封装工艺为薄膜封装、固化胶封装、干燥剂封装以及盖板封装工艺中的一种或组合方式进行封装。\n\n[0023]根据本揭示一实施例，在所述步骤S101中，所述有机发光二极管器件层包括空穴注入层、空穴传输层、发光层、电子传输层以及电荷生成层。\n\n[0024]根据本揭示一实施例，所述有机发光二极管器件层采用喷墨打印工艺和蒸镀工艺进行制备。\n\n[0025]根据本揭示一实施例，所述步骤S101中，所述阴极层的材料为氧化铟锡、氧化铟锌、镁或银。\n\n[0026]综上所述，本揭示实施例的有益效果为：\n\n[0027]本揭示提供一种显示面板及显示面板的制备方法，通过在顶发射式OLED器件中，在整面阴极的基础上采用转印技术设置辅助阴极层，所述辅助阴极层设置在显示面板的非像素发光区域内，这样，有效的降低了阴极的阻抗，并解决了显示面板的压降问题，提高显示面板的显示效果。\n\n附图说明\n\n[0028]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是揭示的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0029]图1为本揭示实施例的显示面板各层结构示意图；\n\n[0030]图2为本揭示实施例提供的显示面板的制备工艺流程图；\n\n[0031]图3为本揭示实施例提供的辅助电极层结构示意图。\n\n具体实施方式\n\n[0032]下面将结合本揭示实施例中的附图，对本揭示实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本揭示一部分实施例，而不是全部的实施例。基于本揭示中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本揭示保护的范围。\n\n[0033]在本揭示的实施例中，如图1所示，图1为本揭示实施例的显示面板各层结构示意图。所述显示面板包括基板100、设置在基板100上的缓冲层101、设置在缓冲层101上的无机绝缘层102、设置在无机绝缘层102上的钝化层103以及设置在钝化层103上的平坦层104。在上述各层中，在缓冲层101内还设置有薄膜晶体管(thin film transistor，TFT)第一栅极114，在无机绝缘层102内，还包括有源层115、设置在有源层115上的栅极绝缘层113，以及设置在栅极绝缘层113上的第二栅极层112。在钝化层103内还设置有薄膜晶体管的源/漏极111。其中，上述薄膜晶体管的源/漏极111与所述有源层115相连接。\n\n[0034]上述膜层中，主要为薄膜晶体管的各电极，在制备上述各膜层时，可采用溅射成膜的工艺，或者有机成膜的技术，并经过曝光、显影以及刻蚀等工艺制备而来。\n\n[0035]同时，在所述平坦层104膜层上还包括：OLED阳极层105、OLED器件层106、无机层107以及有机层108。OLED阳极层105设置在OLED器件层106上，所述OLED阳极层105与OLED器件层106均设置在像素定义层内，无机层107密封所述OLED阳极层105、OLED器件层106以及像素定义层。有机层108设置在所述无机层107上，无机层107与有机层108一同组成了显示面板的封装层，以保护封装层内的OLED器件。\n\n[0036]同时，在有机层108上还设置一辅助电极层109，在所述辅助电极层109上设置盖板110。其中，所述辅助电极层109只设置在OLED器件的非发光区域上，即设置在显示面板的非开口区域内，这样，不会阻挡住OLED器件层106内发出的光线，从而不影响显示面板的显示效果。并且，所述辅助电极层109会形成一层加强金属层，这层金属层会降低OLED器件中阴极的阻抗，进而解决显示面板压降的问题，保证显示面板显示的均匀性。\n\n[0037]具体的，辅助电极层109的制作材料可为纳米银，并且盖板110可为玻璃盖板或者彩色滤光片盖板，根据显示面板的具体使用需求进行选择。\n\n[0038]同时，本揭示实施例还提供一种显示面板的制备方法。如图2所示，图2为本揭示实施例提供的显示面板的制备工艺流程图。工艺流程包括如下步骤：\n\n[0039]S100：在基板上制备薄膜晶体管的栅极层、源极层、漏极层，以及有源层和有机发光二极管的阳极层。\n\n[0040]具体的，在制备本揭示实施例提供的显示面板时，先在基板上采用逐层一次构图的工艺形成TFT的第一栅极层、有源层、绝缘层、第二栅极层、源/漏极以及OLED的阳极层，具体膜层结构结合图1中显示面板的各膜层示意图所示。在上述各膜层的制程过程中，可以通过溅射成膜技术、有机化学成膜技术进行成膜，并且经过曝光、显影以及刻蚀等光刻工艺处理。\n\n[0041]S101：在步骤S100的基础上制备有机发光二极管器件层及像素定义层，并制备所述有机发光二极管的阴极层。\n\n[0042]当步骤S100中的各膜层设置完成后，继续制备有机发光二极管的器件层，制备有机发光二极管器件层时可采用逐层精密再生掩模板技术工艺进行制备，同时，还可以采用喷墨打印和蒸镀方式相结合的技术工艺进行制备。所述器件层主要为发光层，具体包括空穴注入层、空穴传输层、发光层、电子传输层以及电荷生成层等膜层。\n\n[0043]当器件层制备完成后，在所述器件层上制备阴极层。阴极层的制备也可采用精密再生掩模板技术，其中阴极的材料可为氧化铟锡、氧化铟锌、镁或银中的一种。\n\n[0044]S102：制备精密的辅助电极层，并将所述辅助电极层转印到所述有机发光二极管的非像素区域内。\n\n[0045]在步骤S101的基础上制备精密的电路图层，即辅助电极层。在制备时，采用高精度对位转印技术将辅助电极层制作于OLED器件层上。\n\n[0046]具体的，如图3所示，图3为本揭示实施例提供的辅助电极层结构示意图。显示面板300中包括像素单元302以及辅助电极层301。辅助电极层301设置在显示面板的非发光区内，即非开口区，这样，辅助电极层301不会影响像素区内的显示效果。根据OLED内像素单元的大小制备合适的掩膜图案，然后采用高精度对位转印技术，在掩膜图案上设置辅助电极层301，再转印到OLED器件层上。所述辅助电极层301的厚度为50纳米～1000纳米，优选的为250纳米，所述辅助电极层301的宽度为3微米～20微米，优选的为3微米。\n\n[0047]S103：转印完成后，封装所述显示面板。\n\n[0048]当将辅助电极层转印完成后，将盖板盖上进一步封装，所述盖板为玻璃盖板或彩色滤光片，根据显示面板的显示需求进行具体选择。选择封装工艺时，可采用薄膜封装、固化胶封装、干燥剂封装或盖板封装工艺进行封装，可选择上述封装工艺中的一种或组合的方式进行封装，以保证封装的效果。\n\n[0049]最后，获得本揭示实施例中的显示面板。\n\n[0050]以上对本揭示实施例所提供的一种显示面板及显示面板的制备方法进行了详细介绍，以上实施例的说明只是用于帮助理解本揭示的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，而这些修改或者替换，并不使相应技术方案的本质脱离本揭示各实施例的技术方案的范围。', '技术领域\n\n[0001]本揭示涉及显示技术领域，尤其涉及一种显示面板及显示面板的制备方法。\n\n背景技术\n\n[0002]有机电致发光显示器件(Organic Light-Emitting Device，OLED)相对于液晶显示装置具有自发光、反应快、轻薄等优点，已成为显示领域的新兴技术。\n\n[0003]有机电致发光显示器件按照发光方式分为底发射和顶发射，底发射型显示器件中由于设计开口率的问题而无法满足市场高分辨率产品发展的需求，因此，顶发射OLED器件的使用范围更广。顶发射OLED具有高的分辨率、透明阴极以及光学效果等优点。现有的顶发射器件生产工艺流程中，采用整面镀膜的方法，这样更容易实现大尺寸的OLED屏，但是，在现有的顶发射器件产品中，阴极层制备完成后，其阻抗变得较大，不能满足使用要求，使得显示面板在显示时压降不理想，造成面板显示不均匀等问题。\n\n[0004]综上所述，现有的顶发射OLED显示面板在阴极层制备制程中，无法实现其阴极层在具有较高透过率的同时还具有较小的阻抗，使得显示面板在显示时显示不均匀。针对上述问题，需要提出进一步的完善和解决方案。\n\n发明内容\n\n[0005]本揭示提供一种显示面板及显示面板的制备方法，以解决现有的顶发射OLED面板中，无法满足在阴极层具有较高透过率的同时还具有较小的阻抗，显示面板显示不均匀等问题。\n\n[0006]为解决上述技术问题，本揭示实施例提供的技术方案如下：\n\n[0007]根据本揭示实施例的第一方面，提供了一种显示面板，包括：\n\n[0008]发光层；\n\n[0009]像素定义层，所述像素定义层与所述发光层间隔设置；\n\n[0010]封装层，所述封装层设置在所述发光层和所述像素定义层上；\n\n[0011]盖板，所述盖板设置在所述封装层上；\n\n[0012]其中，还包括辅助电极层，所述辅助电极层设置在所述封装层与所述盖板之间，且所述辅助电极层设置在所述显示面板的非开口区域内。\n\n[0013]根据本揭示一实施例，所述辅助电极层的材料为纳米银。\n\n[0014]根据本揭示一实施例，所述盖板为玻璃盖板或彩色滤光片。\n\n[0015]根据本揭示一实施例，所述辅助电极层的厚度为50纳米～1000纳米，所述辅助电极层的宽度为3微米～20微米。\n\n[0016]根据本揭示的第二方面，还提供了一种显示面板的制备方法，包括以下步骤，\n\n[0017]S100：在基板上制备薄膜晶体管的栅极层、源极层、漏极层，以及有源层和有机发光二极管的阳极层；\n\n[0018]S101：在步骤S100的基础上制备有机发光二极管器件层及像素定义层，并制备所述有机发光二极管的阴极层；\n\n[0019]S102：制备精密的辅助电极层，并将所述辅助电极层转印到所述有机发光二极管的非像素区域内；\n\n[0020]S103：转印完成后，封装所述显示面板。\n\n[0021]根据本揭示一实施例，所述步骤S101中，所述制备工艺为精密再生掩模板技术。\n\n[0022]根据本揭示一实施例，所述步骤S103中，所述封装工艺为薄膜封装、固化胶封装、干燥剂封装以及盖板封装工艺中的一种或组合方式进行封装。\n\n[0023]根据本揭示一实施例，在所述步骤S101中，所述有机发光二极管器件层包括空穴注入层、空穴传输层、发光层、电子传输层以及电荷生成层。\n\n[0024]根据本揭示一实施例，所述有机发光二极管器件层采用喷墨打印工艺和蒸镀工艺进行制备。\n\n[0025]根据本揭示一实施例，所述步骤S101中，所述阴极层的材料为氧化铟锡、氧化铟锌、镁或银。\n\n[0026]综上所述，本揭示实施例的有益效果为：\n\n[0027]本揭示提供一种显示面板及显示面板的制备方法，通过在顶发射式OLED器件中，在整面阴极的基础上采用转印技术设置辅助阴极层，所述辅助阴极层设置在显示面板的非像素发光区域内，这样，有效的降低了阴极的阻抗，并解决了显示面板的压降问题，提高显示面板的显示效果。\n\n附图说明\n\n[0028]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是揭示的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0029]图1为本揭示实施例的显示面板各层结构示意图；\n\n[0030]图2为本揭示实施例提供的显示面板的制备工艺流程图；\n\n[0031]图3为本揭示实施例提供的辅助电极层结构示意图。\n\n具体实施方式\n\n[0032]下面将结合本揭示实施例中的附图，对本揭示实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本揭示一部分实施例，而不是全部的实施例。基于本揭示中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本揭示保护的范围。\n\n[0033]在本揭示的实施例中，如图1所示，图1为本揭示实施例的显示面板各层结构示意图。所述显示面板包括基板100、设置在基板100上的缓冲层101、设置在缓冲层101上的无机绝缘层102、设置在无机绝缘层102上的钝化层103以及设置在钝化层103上的平坦层104。在上述各层中，在缓冲层101内还设置有薄膜晶体管(thin film transistor，TFT)第一栅极114，在无机绝缘层102内，还包括有源层115、设置在有源层115上的栅极绝缘层113，以及设置在栅极绝缘层113上的第二栅极层112。在钝化层103内还设置有薄膜晶体管的源/漏极111。其中，上述薄膜晶体管的源/漏极111与所述有源层115相连接。\n\n[0034]上述膜层中，主要为薄膜晶体管的各电极，在制备上述各膜层时，可采用溅射成膜的工艺，或者有机成膜的技术，并经过曝光、显影以及刻蚀等工艺制备而来。\n\n[0035]同时，在所述平坦层104膜层上还包括：OLED阳极层105、OLED器件层106、无机层107以及有机层108。OLED阳极层105设置在OLED器件层106上，所述OLED阳极层105与OLED器件层106均设置在像素定义层内，无机层107密封所述OLED阳极层105、OLED器件层106以及像素定义层。有机层108设置在所述无机层107上，无机层107与有机层108一同组成了显示面板的封装层，以保护封装层内的OLED器件。\n\n[0036]同时，在有机层108上还设置一辅助电极层109，在所述辅助电极层109上设置盖板110。其中，所述辅助电极层109只设置在OLED器件的非发光区域上，即设置在显示面板的非开口区域内，这样，不会阻挡住OLED器件层106内发出的光线，从而不影响显示面板的显示效果。并且，所述辅助电极层109会形成一层加强金属层，这层金属层会降低OLED器件中阴极的阻抗，进而解决显示面板压降的问题，保证显示面板显示的均匀性。\n\n[0037]具体的，辅助电极层109的制作材料可为纳米银，并且盖板110可为玻璃盖板或者彩色滤光片盖板，根据显示面板的具体使用需求进行选择。\n\n[0038]同时，本揭示实施例还提供一种显示面板的制备方法。如图2所示，图2为本揭示实施例提供的显示面板的制备工艺流程图。工艺流程包括如下步骤：\n\n[0039]S100：在基板上制备薄膜晶体管的栅极层、源极层、漏极层，以及有源层和有机发光二极管的阳极层。\n\n[0040]具体的，在制备本揭示实施例提供的显示面板时，先在基板上采用逐层一次构图的工艺形成TFT的第一栅极层、有源层、绝缘层、第二栅极层、源/漏极以及OLED的阳极层，具体膜层结构结合图1中显示面板的各膜层示意图所示。在上述各膜层的制程过程中，可以通过溅射成膜技术、有机化学成膜技术进行成膜，并且经过曝光、显影以及刻蚀等光刻工艺处理。\n\n[0041]S101：在步骤S100的基础上制备有机发光二极管器件层及像素定义层，并制备所述有机发光二极管的阴极层。\n\n[0042]当步骤S100中的各膜层设置完成后，继续制备有机发光二极管的器件层，制备有机发光二极管器件层时可采用逐层精密再生掩模板技术工艺进行制备，同时，还可以采用喷墨打印和蒸镀方式相结合的技术工艺进行制备。所述器件层主要为发光层，具体包括空穴注入层、空穴传输层、发光层、电子传输层以及电荷生成层等膜层。\n\n[0043]当器件层制备完成后，在所述器件层上制备阴极层。阴极层的制备也可采用精密再生掩模板技术，其中阴极的材料可为氧化铟锡、氧化铟锌、镁或银中的一种。\n\n[0044]S102：制备精密的辅助电极层，并将所述辅助电极层转印到所述有机发光二极管的非像素区域内。\n\n[0045]在步骤S101的基础上制备精密的电路图层，即辅助电极层。在制备时，采用高精度对位转印技术将辅助电极层制作于OLED器件层上。\n\n[0046]具体的，如图3所示，图3为本揭示实施例提供的辅助电极层结构示意图。显示面板300中包括像素单元302以及辅助电极层301。辅助电极层301设置在显示面板的非发光区内，即非开口区，这样，辅助电极层301不会影响像素区内的显示效果。根据OLED内像素单元的大小制备合适的掩膜图案，然后采用高精度对位转印技术，在掩膜图案上设置辅助电极层301，再转印到OLED器件层上。所述辅助电极层301的厚度为50纳米～1000纳米，优选的为250纳米，所述辅助电极层301的宽度为3微米～20微米，优选的为3微米。\n\n[0047]S103：转印完成后，封装所述显示面板。\n\n[0048]当将辅助电极层转印完成后，将盖板盖上进一步封装，所述盖板为玻璃盖板或彩色滤光片，根据显示面板的显示需求进行具体选择。选择封装工艺时，可采用薄膜封装、固化胶封装、干燥剂封装或盖板封装工艺进行封装，可选择上述封装工艺中的一种或组合的方式进行封装，以保证封装的效果。\n\n[0049]最后，获得本揭示实施例中的显示面板。\n\n[0050]以上对本揭示实施例所提供的一种显示面板及显示面板的制备方法进行了详细介绍，以上实施例的说明只是用于帮助理解本揭示的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，而这些修改或者替换，并不使相应技术方案的本质脱离本揭示各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10666, 23720, '[0001]【技术领域】\n\n[0002]本发明涉及显示技术领域，特别是涉及一种显示面板及电子装置。\n\n[0003]【背景技术】\n\n[0004]双面显示面板是指正反面均设置有显示屏，其中正面为主面板而背面为副面板，主面板通常为全面板设计。当正面的面板点亮时，背面的面板关闭也即为熄屏状态，背面的面板处于熄屏板状态下可以作为背板，这样在一定程度上降低了功耗。\n\n[0005]现有的自发光双面显示面板通常包括两块显示面板，之后再将两块显示面板的背面贴合在一起或者组合在一起。这种双面显示面板虽然能够实现双面显示，但是由于需要采用两块显示面板，导致厚度较大。\n\n[0006]【发明内容】\n\n[0007]本发明的目的在于提供一种显示面板及电子装置，能够减小显示面板的厚底。\n\n[0008]为解决上述技术问题，本发明提供一种显示面板，其包括：\n\n[0009]驱动基板；\n\n[0010]绝缘层，设置有第一容置槽和第二容置槽；\n\n[0011]第一微型发光二极管，设置在所述第一容置槽内；\n\n[0012]第二微型发光二极管，设置在所述第二容置槽内，所述第二微型发光二极管的上方设置有反射层。\n\n[0013]本发明还提供一种电子装置，其包括上述显示面板。\n\n[0014]本发明的显示面板及电子装置，由于在单个显示面板上设置两个微型发光二极管，且在第二微型发光二极管的上方设置有第一反射层，因此使得第二微型发光二极管的光线朝向显示面板的背面出射，从而实现了双面显示，由于不需要两个显示面板，因此减小了显示面板的整体厚度。\n\n[0015]【附图说明】\n\n[0016]图1为本发明显示面板的结构示意图；\n\n[0017]图2为本发明显示面板的俯视图；\n\n[0018]图3为本发明显示单元的电路图。\n\n[0019]【具体实施方式】\n\n[0020]以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。\n\n[0021]如图1和2所示，本发明的显示面板100为双面显示面板。\n\n[0022]本发明的显示面板100的包括驱动基板10、绝缘层20、第一微型发光二极管31以及第二微型发光二极管32。所述显示面板100还可包括平坦层50。\n\n[0023]其中驱动基板10的截面结构包括衬底基板11、开关阵列层12以及像素电极13。\n\n[0024]开关阵列层12位于衬底基板11上，其包括多个薄膜晶体管。\n\n[0025]像素电极13位于开关阵列层12上。像素电极13的材料可为ITO。\n\n[0026]绝缘层20设置有第一容置槽21和第二容置槽22。在一实施方式中，为了提高对比度，所述绝缘层20的材料为遮光材料，比如为黑色光阻材料。\n\n[0027]第一微型发光二极管31设置在所述第一容置槽21内。\n\n[0028]第二微型发光二极管32设置在所述第二容置槽22内，所述第二微型发光二极管32的上方设置有第一反射层41。其中为了提高显示效果，所述第一反射层41覆盖所述第二容置槽22。也即在所述第一反射层41在衬底基板11上的投影面积大于所述第二容置槽22在衬底基板11上的投影面积。\n\n[0029]其中为了减小显示面板的尺寸，所述第一微型发光二极管31和所述第二微型发光二极管32相邻。其中为了简化制程工艺，所述像素电极13覆盖所述第一微型发光二极管31和所述第二微型发光二极管32，且所述第一微型发光二极管31和所述第二微型发光二极管32均与所述像素电极13电性连接。也即两个微型发光二极管共用像素电极，不仅可以减小线路的排布数量，且使得电流的控制更加精准，进而提升画面颜色的精准度。\n\n[0030]为了提高光线的利用率，在一实施方式中，所述第二容置槽22的侧壁上也设置有第二反射层42。\n\n[0031]为了进一步提高光线的利用率，在一实施方式中，所述第一容置槽21的侧壁上也设置有第三反射层43。其中第一反射层、第二反射层、第三反射层的材料可相同。在一实施方式中，第一反射层41、第二反射层42、第三反射层43在同一制程工艺中制得的。\n\n[0032]结合图3，所述驱动基板10还包括第一薄膜晶体管T1和第二薄膜晶体管T2；所述第一薄膜晶体管T1的栅极接入第一扫描信号S1，其源极接入第一数据信号M1，其漏极与所述第二薄膜晶体管T2的栅极连接；所述第二薄膜晶体管T2的源极与电源负电压VSS连接，其漏极与所述第一微型发光二极管31的阴极连接。此外所述驱动基板10还可包括第一电容C1，第一电容C1的一端与所述第一薄膜晶体管T1的漏极连接，第一电容C1的另一端与所述第二薄膜晶体管T2的源极连接。\n\n[0033]所述驱动基板10还包括第三薄膜晶体管T3和第四薄膜晶体管T4；所述第三薄膜晶体管T3的栅极接入第二扫描信号S2，其源极接入第二数据信号M2，其漏极与所述第三薄膜晶体管T3的栅极连接；\n\n[0034]所述第四薄膜晶体管T4的源极与电源负电压VSS连接，其漏极与所述第二微型发光二极管32的阴极连接。此外所述驱动基板10还还可包括第二电容C2，第二电容C2的一端与所述第三薄膜晶体管T3的漏极连接，第二电容C2的另一端与所述第四薄膜晶体管T4的源极连接。\n\n[0035]其中所述第一微型发光二极管31的阳极和所述第二微型发光二极管32的阳极均接入电源正电压VDD。\n\n[0036]所述平坦层50设置在显示面板的顶部，所述平坦层50的材料可为绝缘材料。\n\n[0037]由于在单个显示面板上设置两个微型发光二极管，且第二微型发光二极管的上方设置有反射层，因此使得第二微型发光二极管的光线朝向显示面板的背面出射(也即下方，具体如图1中箭头方向所示)，而第一微型发光二极管发出的光线朝向显示面板的正面，因此实现了双面显示；由于不需要两个显示面板，因此减小了显示面板的整体厚度。此外还可降低生产成本。\n\n[0038]本发明还提供一种电子装置，其包括上述显示面板，该电子装置可以为手机、平板电脑等设备。\n\n[0039]本发明的显示面板及电子装置，由于在单个显示面板上设置两个微型发光二极管，且在第二微型发光二极管的上方设置有第一反射层，因此使得第二微型发光二极管的光线朝向显示面板的背面出射，从而实现了双面显示，由于不需要两个显示面板，因此减小了显示面板的整体厚度。\n\n[0040]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '[0001]【技术领域】\n\n[0002]本发明涉及显示技术领域，特别是涉及一种显示面板及电子装置。\n\n[0003]【背景技术】\n\n[0004]双面显示面板是指正反面均设置有显示屏，其中正面为主面板而背面为副面板，主面板通常为全面板设计。当正面的面板点亮时，背面的面板关闭也即为熄屏状态，背面的面板处于熄屏板状态下可以作为背板，这样在一定程度上降低了功耗。\n\n[0005]现有的自发光双面显示面板通常包括两块显示面板，之后再将两块显示面板的背面贴合在一起或者组合在一起。这种双面显示面板虽然能够实现双面显示，但是由于需要采用两块显示面板，导致厚度较大。\n\n[0006]【发明内容】\n\n[0007]本发明的目的在于提供一种显示面板及电子装置，能够减小显示面板的厚底。\n\n[0008]为解决上述技术问题，本发明提供一种显示面板，其包括：\n\n[0009]驱动基板；\n\n[0010]绝缘层，设置有第一容置槽和第二容置槽；\n\n[0011]第一微型发光二极管，设置在所述第一容置槽内；\n\n[0012]第二微型发光二极管，设置在所述第二容置槽内，所述第二微型发光二极管的上方设置有反射层。\n\n[0013]本发明还提供一种电子装置，其包括上述显示面板。\n\n[0014]本发明的显示面板及电子装置，由于在单个显示面板上设置两个微型发光二极管，且在第二微型发光二极管的上方设置有第一反射层，因此使得第二微型发光二极管的光线朝向显示面板的背面出射，从而实现了双面显示，由于不需要两个显示面板，因此减小了显示面板的整体厚度。\n\n[0015]【附图说明】\n\n[0016]图1为本发明显示面板的结构示意图；\n\n[0017]图2为本发明显示面板的俯视图；\n\n[0018]图3为本发明显示单元的电路图。\n\n[0019]【具体实施方式】\n\n[0020]以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。\n\n[0021]如图1和2所示，本发明的显示面板100为双面显示面板。\n\n[0022]本发明的显示面板100的包括驱动基板10、绝缘层20、第一微型发光二极管31以及第二微型发光二极管32。所述显示面板100还可包括平坦层50。\n\n[0023]其中驱动基板10的截面结构包括衬底基板11、开关阵列层12以及像素电极13。\n\n[0024]开关阵列层12位于衬底基板11上，其包括多个薄膜晶体管。\n\n[0025]像素电极13位于开关阵列层12上。像素电极13的材料可为ITO。\n\n[0026]绝缘层20设置有第一容置槽21和第二容置槽22。在一实施方式中，为了提高对比度，所述绝缘层20的材料为遮光材料，比如为黑色光阻材料。\n\n[0027]第一微型发光二极管31设置在所述第一容置槽21内。\n\n[0028]第二微型发光二极管32设置在所述第二容置槽22内，所述第二微型发光二极管32的上方设置有第一反射层41。其中为了提高显示效果，所述第一反射层41覆盖所述第二容置槽22。也即在所述第一反射层41在衬底基板11上的投影面积大于所述第二容置槽22在衬底基板11上的投影面积。\n\n[0029]其中为了减小显示面板的尺寸，所述第一微型发光二极管31和所述第二微型发光二极管32相邻。其中为了简化制程工艺，所述像素电极13覆盖所述第一微型发光二极管31和所述第二微型发光二极管32，且所述第一微型发光二极管31和所述第二微型发光二极管32均与所述像素电极13电性连接。也即两个微型发光二极管共用像素电极，不仅可以减小线路的排布数量，且使得电流的控制更加精准，进而提升画面颜色的精准度。\n\n[0030]为了提高光线的利用率，在一实施方式中，所述第二容置槽22的侧壁上也设置有第二反射层42。\n\n[0031]为了进一步提高光线的利用率，在一实施方式中，所述第一容置槽21的侧壁上也设置有第三反射层43。其中第一反射层、第二反射层、第三反射层的材料可相同。在一实施方式中，第一反射层41、第二反射层42、第三反射层43在同一制程工艺中制得的。\n\n[0032]结合图3，所述驱动基板10还包括第一薄膜晶体管T1和第二薄膜晶体管T2；所述第一薄膜晶体管T1的栅极接入第一扫描信号S1，其源极接入第一数据信号M1，其漏极与所述第二薄膜晶体管T2的栅极连接；所述第二薄膜晶体管T2的源极与电源负电压VSS连接，其漏极与所述第一微型发光二极管31的阴极连接。此外所述驱动基板10还可包括第一电容C1，第一电容C1的一端与所述第一薄膜晶体管T1的漏极连接，第一电容C1的另一端与所述第二薄膜晶体管T2的源极连接。\n\n[0033]所述驱动基板10还包括第三薄膜晶体管T3和第四薄膜晶体管T4；所述第三薄膜晶体管T3的栅极接入第二扫描信号S2，其源极接入第二数据信号M2，其漏极与所述第三薄膜晶体管T3的栅极连接；\n\n[0034]所述第四薄膜晶体管T4的源极与电源负电压VSS连接，其漏极与所述第二微型发光二极管32的阴极连接。此外所述驱动基板10还还可包括第二电容C2，第二电容C2的一端与所述第三薄膜晶体管T3的漏极连接，第二电容C2的另一端与所述第四薄膜晶体管T4的源极连接。\n\n[0035]其中所述第一微型发光二极管31的阳极和所述第二微型发光二极管32的阳极均接入电源正电压VDD。\n\n[0036]所述平坦层50设置在显示面板的顶部，所述平坦层50的材料可为绝缘材料。\n\n[0037]由于在单个显示面板上设置两个微型发光二极管，且第二微型发光二极管的上方设置有反射层，因此使得第二微型发光二极管的光线朝向显示面板的背面出射(也即下方，具体如图1中箭头方向所示)，而第一微型发光二极管发出的光线朝向显示面板的正面，因此实现了双面显示；由于不需要两个显示面板，因此减小了显示面板的整体厚度。此外还可降低生产成本。\n\n[0038]本发明还提供一种电子装置，其包括上述显示面板，该电子装置可以为手机、平板电脑等设备。\n\n[0039]本发明的显示面板及电子装置，由于在单个显示面板上设置两个微型发光二极管，且在第二微型发光二极管的上方设置有第一反射层，因此使得第二微型发光二极管的光线朝向显示面板的背面出射，从而实现了双面显示，由于不需要两个显示面板，因此减小了显示面板的整体厚度。\n\n[0040]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10667, 23721, '技术领域\n\n[0001]本发明属于背光领域，尤其涉及一种薄型化灯板及其制作方法。\n\n背景技术\n\n[0002]迷你发光二极管尺寸小，用于实现超薄多分区，是当前业者开发技术方向。然而，当迷你发光二极管方案应用于电视产品时，薄型化同时也带来大量的迷你发光二极管数量需求，导致成本高昂，难以应用在现行市场打开局面。如何在维持多分区效果，超薄效果的同时减少迷你发光二极管数量，使其成本下降成为业者开发方向。过往业者通常采用二次透镜方式，实现光扩散，进而实现相同混光高度，迷你发光二极管数量减少。\n\n[0003]在迷你发光二极管背光中，传统二次透镜结构难以实现薄型化效果，且传统透镜贴片方式同样存在高额成本，另外，若利用相同的注塑成型方案实现微透镜阵列，亦难以实现大面积效果。另外，在迷你发光二极管灯板上通常只能实现一次光学效果(无法形成空气层)，而无法达到二次透镜光学效果。\n\n发明内容\n\n[0004]本发明实施例提供一种薄型化灯板及其制作方法，实现光扩散，进而实现相同混光高度时，光源数量减少，降低成本，同时实现产品薄型化。\n\n[0005]根据本发明的一方面，本发明提供一种薄型化灯板，包括：一灯板，所述灯板的一表面设有多个第一结构体，且所述多个第一结构体均设有一缺口和一容置槽，所述容置槽内设置一光源；以及一膜片，所述膜片与所述灯板相对设置，所述膜片的一表面设有与所述多个缺口相契合的多个第二结构体。\n\n[0006]进一步地，所述光源为迷你发光二极管。\n\n[0007]进一步地，所述多个第二结构体均设有一凹槽，且所述多个第二结构体的高度尺寸为100um至1000um。\n\n[0008]进一步地，相邻的所述多个第一结构体的之间间距与相邻的所述多个第二结构体的之间间距相同。\n\n[0009]进一步地，所述多个第一结构体的材料均为硅树脂。\n\n[0010]根据本发明的另一方面，本发明提供一种薄型化灯板制作方法，所述方法包括以下步骤：提供一包括多个光源的灯板；在所述多个光源的四周通过涂布或注塑方式形成多个第一结构体；在一与所述灯板相对设置的膜片上通过膜片滚压方式形成多个第二结构体；以及将所述膜片与所述灯板对位贴合，所述多个第一结构体和所述多个第二结构体相贴合以形成二次透镜。\n\n[0011]进一步地，所述多个光源等距间隔设置在所述灯板上。\n\n[0012]进一步地，所述多个第一结构体均设有一缺口和一容置槽。\n\n[0013]进一步地，所述多个第一结构体的材料均为硅树脂。\n\n[0014]进一步地，所述多个第二结构体均设有一凹槽。\n\n[0015]本发明实施例通过第一结构体和第二结构体相贴合形成二次透镜，以达到光扩散的目的，进而实现相同混光高度时，光源数量减少，降低成本；在灯板上通过涂布或注塑方式形成多个第一结构体，在膜片上通过膜片滚压方式成型第二结构体，较传统二次透镜注塑方式，缩小二次透镜尺寸，实现产品薄型化。\n\n附图说明\n\n[0016]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其有益效果显而易见。\n\n[0017]图1是本发明实施例提供的一种薄型化灯板的结构示意图。\n\n[0018]图2是本发明实施例提供的第一结构体和第二结构体组成的二次透镜的结构示意图。\n\n[0019]图3是本发明实施例提供的一种薄型化灯板制作方法的流程示意图。\n\n具体实施方式\n\n[0020]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0021]本发明的说明书和权利要求书以及上述附图中的术语“第一”、“第二”、“第三”等(如果存在)是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。应当理解，这样描述的对象在适当情况下可以互换。此外，术语“包括”和“具有”以及他们的任何变形，意图在于覆盖不排他的包含。\n\n[0022]在具体实施方式中，下文论述的附图以及用来描述本发明公开的原理的各实施例仅用于说明，而不应解释为限制本发明公开的范围。所属领域的技术人员将理解，本发明的原理可在任何适当布置的系统中实施。将详细说明示例性实施方式，在附图中示出了这些实施方式的实例。此外，将参考附图详细描述根据示例性实施例的终端。附图中的相同附图标号指代相同的元件。\n\n[0023]本具体实施方式中使用的术语仅用来描述特定实施方式，而并不意图显示本发明的概念。除非上下文中有明确不同的意义，否则，以单数形式使用的表达涵盖复数形式的表达。在本发明说明书中，应理解，诸如“包括”、“具有”以及“含有”等术语意图说明存在本发明说明书中揭示的特征、数字、步骤、动作或其组合的可能性，而并不意图排除可存在或可添加一个或多个其他特征、数字、步骤、动作或其组合的可能性。附图中的相同参考标号指代相同部分。\n\n[0024]如图1所示，本发明实施例提供一种薄型化灯板，包括：灯板10、膜片20、第一结构体110、容置槽1101、光源120以及第二结构体210。\n\n[0025]具体的，在灯板10的一表面上等距间隔设有多个第一结构体110，且每个第一结构体110设有缺口(图中未标出)和容置槽1101，容置槽1101内设置一光源120。其中光源120可以是但不限于迷你发光二极管。第一结构体110的材料采用硅树脂，便于形状成型。在膜片20的一表面上等距间隔设有多个与缺口(图中未标出)相契合的第二结构体210，第二结构体的高度尺寸为100um至1000um，优选100um、200um、300um、400um、500um、600um、700um、800um、900um以及1000um。\n\n[0026]其中膜片20对位贴附于灯板10上时，第二结构体210嵌入第一结构体110的缺口(图中未标出)组成二次透镜，如图2所示，通过光扩散，进而实现相同混光高度时，光源数量减少，降低成本。\n\n[0027]另外，第二结构体210具有一凹槽(图中未标出)，与第一结构体110贴合时，凹槽(图中未标出)内表面与第一结构体110的内表面连接处光滑。\n\n[0028]另外，相邻的第一结构体110的之间间距与相邻的第二结构体210的之间间距相同，便于膜片20与灯板10的对位贴合。\n\n[0029]由于所述第一结构体110和所述第二结构体210如此设计，因此，光源120发出的光线通过二次透镜1，实现光扩散，进而实现相同混光高度时，迷你发光二极管的数量减少。\n\n[0030]如图3所示，本发明实施例提供一种薄型化灯板制作方法，步骤包括：\n\n[0031]步骤S10，提供一包括多个光源的灯板。\n\n[0032]其中步骤S10中的多个光源等距间隔设置在所述灯板上，利于光线的均匀。\n\n[0033]步骤S20，在所述多个光源的四周通过涂布或注塑方式形成多个第一结构体。\n\n[0034]在步骤S20中，第一结构体的材料可采用硅树脂，先期进行预固化，实现形状成型。\n\n[0035]步骤S30，在一与所述灯板相对设置的膜片上通过膜片滚压方式形成多个第二结构体。\n\n[0036]在步骤S30中，相邻的第二结构体的之间间距与相邻第一结构体的之间间距相同，便于膜片与灯板的对位贴合，且通过膜片滚压方式形成多个第二结构体。\n\n[0037]其中，第二结构体的尺寸为100um至1000um，优选100um、200um、300um、400um、500um、600um、700um、800um、900um以及1000um。较传统二次透镜采用聚甲基丙烯酸甲酯(Polymethyl methacrylate，PMMA)注塑成型，实现高扩散效果尺寸高度通常不低于5mm，本发明的分切方式的尺寸更小，有利于实现薄型化。\n\n[0038]步骤S40，将所述膜片与所述灯板对位贴合，所述多个第一结构体和所述多个第二结构体相贴合形成二次透镜。\n\n[0039]在步骤S40中，膜片采用软贴硬方式贴附于灯板上，之后进行二次固化，实现膜片与灯板的连接，实现二次透镜效果。\n\n[0040]本发明实施例通过第一结构体和第二结构体相贴合形成二次透镜，以达到光扩散的目的，进而实现相同混光高度时，光源数量减少，降低成本；在灯板上通过涂布或注塑方式形成多个第一结构体，在膜片上通过膜片滚压方式成型第二结构体，较传统二次透镜注塑方式，缩小二次透镜尺寸，实现产品薄型化。\n\n[0041]以上对本发明实施例所提供的一种薄型化灯板及其制作方法进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。', '技术领域\n\n[0001]本发明属于背光领域，尤其涉及一种薄型化灯板及其制作方法。\n\n背景技术\n\n[0002]迷你发光二极管尺寸小，用于实现超薄多分区，是当前业者开发技术方向。然而，当迷你发光二极管方案应用于电视产品时，薄型化同时也带来大量的迷你发光二极管数量需求，导致成本高昂，难以应用在现行市场打开局面。如何在维持多分区效果，超薄效果的同时减少迷你发光二极管数量，使其成本下降成为业者开发方向。过往业者通常采用二次透镜方式，实现光扩散，进而实现相同混光高度，迷你发光二极管数量减少。\n\n[0003]在迷你发光二极管背光中，传统二次透镜结构难以实现薄型化效果，且传统透镜贴片方式同样存在高额成本，另外，若利用相同的注塑成型方案实现微透镜阵列，亦难以实现大面积效果。另外，在迷你发光二极管灯板上通常只能实现一次光学效果(无法形成空气层)，而无法达到二次透镜光学效果。\n\n发明内容\n\n[0004]本发明实施例提供一种薄型化灯板及其制作方法，实现光扩散，进而实现相同混光高度时，光源数量减少，降低成本，同时实现产品薄型化。\n\n[0005]根据本发明的一方面，本发明提供一种薄型化灯板，包括：一灯板，所述灯板的一表面设有多个第一结构体，且所述多个第一结构体均设有一缺口和一容置槽，所述容置槽内设置一光源；以及一膜片，所述膜片与所述灯板相对设置，所述膜片的一表面设有与所述多个缺口相契合的多个第二结构体。\n\n[0006]进一步地，所述光源为迷你发光二极管。\n\n[0007]进一步地，所述多个第二结构体均设有一凹槽，且所述多个第二结构体的高度尺寸为100um至1000um。\n\n[0008]进一步地，相邻的所述多个第一结构体的之间间距与相邻的所述多个第二结构体的之间间距相同。\n\n[0009]进一步地，所述多个第一结构体的材料均为硅树脂。\n\n[0010]根据本发明的另一方面，本发明提供一种薄型化灯板制作方法，所述方法包括以下步骤：提供一包括多个光源的灯板；在所述多个光源的四周通过涂布或注塑方式形成多个第一结构体；在一与所述灯板相对设置的膜片上通过膜片滚压方式形成多个第二结构体；以及将所述膜片与所述灯板对位贴合，所述多个第一结构体和所述多个第二结构体相贴合以形成二次透镜。\n\n[0011]进一步地，所述多个光源等距间隔设置在所述灯板上。\n\n[0012]进一步地，所述多个第一结构体均设有一缺口和一容置槽。\n\n[0013]进一步地，所述多个第一结构体的材料均为硅树脂。\n\n[0014]进一步地，所述多个第二结构体均设有一凹槽。\n\n[0015]本发明实施例通过第一结构体和第二结构体相贴合形成二次透镜，以达到光扩散的目的，进而实现相同混光高度时，光源数量减少，降低成本；在灯板上通过涂布或注塑方式形成多个第一结构体，在膜片上通过膜片滚压方式成型第二结构体，较传统二次透镜注塑方式，缩小二次透镜尺寸，实现产品薄型化。\n\n附图说明\n\n[0016]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其有益效果显而易见。\n\n[0017]图1是本发明实施例提供的一种薄型化灯板的结构示意图。\n\n[0018]图2是本发明实施例提供的第一结构体和第二结构体组成的二次透镜的结构示意图。\n\n[0019]图3是本发明实施例提供的一种薄型化灯板制作方法的流程示意图。\n\n具体实施方式\n\n[0020]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0021]本发明的说明书和权利要求书以及上述附图中的术语“第一”、“第二”、“第三”等(如果存在)是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。应当理解，这样描述的对象在适当情况下可以互换。此外，术语“包括”和“具有”以及他们的任何变形，意图在于覆盖不排他的包含。\n\n[0022]在具体实施方式中，下文论述的附图以及用来描述本发明公开的原理的各实施例仅用于说明，而不应解释为限制本发明公开的范围。所属领域的技术人员将理解，本发明的原理可在任何适当布置的系统中实施。将详细说明示例性实施方式，在附图中示出了这些实施方式的实例。此外，将参考附图详细描述根据示例性实施例的终端。附图中的相同附图标号指代相同的元件。\n\n[0023]本具体实施方式中使用的术语仅用来描述特定实施方式，而并不意图显示本发明的概念。除非上下文中有明确不同的意义，否则，以单数形式使用的表达涵盖复数形式的表达。在本发明说明书中，应理解，诸如“包括”、“具有”以及“含有”等术语意图说明存在本发明说明书中揭示的特征、数字、步骤、动作或其组合的可能性，而并不意图排除可存在或可添加一个或多个其他特征、数字、步骤、动作或其组合的可能性。附图中的相同参考标号指代相同部分。\n\n[0024]如图1所示，本发明实施例提供一种薄型化灯板，包括：灯板10、膜片20、第一结构体110、容置槽1101、光源120以及第二结构体210。\n\n[0025]具体的，在灯板10的一表面上等距间隔设有多个第一结构体110，且每个第一结构体110设有缺口(图中未标出)和容置槽1101，容置槽1101内设置一光源120。其中光源120可以是但不限于迷你发光二极管。第一结构体110的材料采用硅树脂，便于形状成型。在膜片20的一表面上等距间隔设有多个与缺口(图中未标出)相契合的第二结构体210，第二结构体的高度尺寸为100um至1000um，优选100um、200um、300um、400um、500um、600um、700um、800um、900um以及1000um。\n\n[0026]其中膜片20对位贴附于灯板10上时，第二结构体210嵌入第一结构体110的缺口(图中未标出)组成二次透镜，如图2所示，通过光扩散，进而实现相同混光高度时，光源数量减少，降低成本。\n\n[0027]另外，第二结构体210具有一凹槽(图中未标出)，与第一结构体110贴合时，凹槽(图中未标出)内表面与第一结构体110的内表面连接处光滑。\n\n[0028]另外，相邻的第一结构体110的之间间距与相邻的第二结构体210的之间间距相同，便于膜片20与灯板10的对位贴合。\n\n[0029]由于所述第一结构体110和所述第二结构体210如此设计，因此，光源120发出的光线通过二次透镜1，实现光扩散，进而实现相同混光高度时，迷你发光二极管的数量减少。\n\n[0030]如图3所示，本发明实施例提供一种薄型化灯板制作方法，步骤包括：\n\n[0031]步骤S10，提供一包括多个光源的灯板。\n\n[0032]其中步骤S10中的多个光源等距间隔设置在所述灯板上，利于光线的均匀。\n\n[0033]步骤S20，在所述多个光源的四周通过涂布或注塑方式形成多个第一结构体。\n\n[0034]在步骤S20中，第一结构体的材料可采用硅树脂，先期进行预固化，实现形状成型。\n\n[0035]步骤S30，在一与所述灯板相对设置的膜片上通过膜片滚压方式形成多个第二结构体。\n\n[0036]在步骤S30中，相邻的第二结构体的之间间距与相邻第一结构体的之间间距相同，便于膜片与灯板的对位贴合，且通过膜片滚压方式形成多个第二结构体。\n\n[0037]其中，第二结构体的尺寸为100um至1000um，优选100um、200um、300um、400um、500um、600um、700um、800um、900um以及1000um。较传统二次透镜采用聚甲基丙烯酸甲酯(Polymethyl methacrylate，PMMA)注塑成型，实现高扩散效果尺寸高度通常不低于5mm，本发明的分切方式的尺寸更小，有利于实现薄型化。\n\n[0038]步骤S40，将所述膜片与所述灯板对位贴合，所述多个第一结构体和所述多个第二结构体相贴合形成二次透镜。\n\n[0039]在步骤S40中，膜片采用软贴硬方式贴附于灯板上，之后进行二次固化，实现膜片与灯板的连接，实现二次透镜效果。\n\n[0040]本发明实施例通过第一结构体和第二结构体相贴合形成二次透镜，以达到光扩散的目的，进而实现相同混光高度时，光源数量减少，降低成本；在灯板上通过涂布或注塑方式形成多个第一结构体，在膜片上通过膜片滚压方式成型第二结构体，较传统二次透镜注塑方式，缩小二次透镜尺寸，实现产品薄型化。\n\n[0041]以上对本发明实施例所提供的一种薄型化灯板及其制作方法进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10668, 23722, '技术领域\n\n[0001]本申请涉及电子显示领域，尤其涉及一种背光结构和显示面板。\n\n背景技术\n\n[0002]次毫米发光二极管(mini-LED)极大的降低了液晶面板中背光光源的尺寸，可以让背光单元的尺寸小于100微米，将背光光源薄膜化、微小化、阵列化使用mini-LED的液晶面板能够实现每个图元单独定址，单独驱动发光。\n\n[0003]由于传统的微透镜结构尺寸过大，无法应用在Mini-LED背光结构中，而利用注塑成型方案实现的微透镜阵列通常面积较小。因此，急需一种适用于Mini-LED的微透镜结构，以进一步提高Mini-LED的光扩散效果，从而减小Mini-LED的数量以减小成本。\n\n[0004]申请内容\n\n[0005]本申请提供了一种背光结构和显示面板，所述背光结构具有适用于Mini-LED的微透镜阵列。\n\n[0006]为解决上述问题，本申请提供了一种背光结构，所述背光结构包括：\n\n[0007]背光光源；\n\n[0008]微透镜阵列，所述微透镜阵列位于所述背光光源上方；\n\n[0009]其中，所述微透镜阵列包括支撑板，所述支撑板包括靠近所述背光光源的第一表面和远离所述背光光源的第二表面，所述第一表面具有多个入光结构，所述第二表面具有多个与所述多个入光结构对应的出光结构，所述多个入光结构和与所述多个入光结构对应的多个出光结构构成多个微透镜结构；\n\n[0010]其中，所述多个入光结构通过第一模具在所述第一表面上压滚成型，所述多个出光结构通过第二模具在所述第二表面上压滚成型。\n\n[0011]根据本申请的其中一个方面，所述背光光源包括多个设置在灯板上的次毫米发光二极管，所述多个次毫米发光二极管与所述多个微透镜结构一一对应。\n\n[0012]根据本申请的其中一个方面，每一个所述入光结构包括第一突起结构；其中，\n\n[0013]所述第一突起结构具有第一表面，所述第一表面与所述灯板的表面贴合；\n\n[0014]所述第一突起结构还包括第一凹陷部，所述第一凹陷部位于所述第一表面的几何中心处，与所述次毫米发光二极管相对应，所述第一凹陷部的表面构成所述微透镜结构的入光面。\n\n[0015]根据本申请的其中一个方面，所述第一凹陷部为半球形结构，与所述入光结构对应的次毫米发光二极管位于所述半球形结构的球心处。\n\n[0016]根据本申请的其中一个方面，每一个所述出光结构包括第二突起结构；其中，\n\n[0017]所述第二突起结构具有第二凹陷部，所述第二凹陷部位于所述第二突起结构的几何中心处，所述第二突起结构的几何中心和所述第一突起结构的几何中心重合；\n\n[0018]所述第二突起结构还包括第二环形部，所述第二环形部环绕所述第二凹陷部，所述第二环形部的表面为连接所述第二凹陷部的边界和所述支撑板的表面的平滑曲面。\n\n[0019]根据本申请的其中一个方面，形成所述支撑板、所述第一突起结构和所述第二突起结构的材料为透光材料，所述透光材料具有热塑性。\n\n[0020]根据本申请的其中一个方面，所述第二凹陷部的表面为反光材料构成的镜面结构，构成所述微透镜结构的反射面；所述第二环形部的表面构成所述微透镜结构的出光面。\n\n[0021]根据本申请的其中一个方面，所述第一凹陷部和所述第二凹陷部的几何中心重合，所述第一凹陷部在所述支撑板上的投影为圆形，所述第二凹陷部在所述支撑板上的投影为圆形，所述第一凹陷部在所述支撑板上的投影覆盖所述第二凹陷部在所述支撑板上的投影。\n\n[0022]根据本申请的其中一个方面，所述微透镜阵列还包括多个支撑柱，所述多个支撑柱设置在所述支撑板的第二表面上，每一个支撑柱位于两个相邻的微透镜结构之间。\n\n[0023]根据本申请的其中一个方面，所述多个支撑柱具有相同的高度，所述多个支撑柱表面具有漫反射结构。\n\n[0024]根据本申请的其中一个方面，所述多个微透镜结构沿第一方向呈条状排列。\n\n[0025]相应的，本申请还提供了一种显示面板，所述显示面板包括如前所述的背光结构。\n\n[0026]本申请提供了一种背光结构，所述背光结构具有支撑板，所述支撑板的第一表面具有多个入光结构，所述支撑板的第二表面具有多个与所述多个入光结构对应的出光结构，所述多个入光结构和与多个出光结构构成多个微透镜结构。本申请中，所述多个入光结构和多个出光结构采用不同的模具压滚成型。本申请提供的微透镜阵列通过压滚成型的方法制作，能够形成大面积的适用于Mini-LED的微透镜阵列，解决了现有技术中微透镜阵列无法适用于Mini-LED的技术问题。\n\n附图说明\n\n[0027]图1为本申请的一个具体实施例中的微透镜阵列的结构示意图；\n\n[0028]图2为图1中微透镜阵列中的一个微透镜的结构示意图；\n\n[0029]图3为本申请的一个具体实施例中的背光结构的结构示意图。\n\n具体实施方式\n\n[0030]以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。\n\n[0031]本申请提供了一种背光结构和显示面板，所述背光结构具有适用于Mini-LED的微透镜阵列。参见图1、图2和图3，图1为本申请的一个具体实施例中的微透镜阵列的结构示意图，图2为图1中微透镜阵列中的一个微透镜的结构示意图，图3为本申请的一个具体实施例中的背光结构的结构示意图。\n\n[0032]参见图3，所述背光结构包括背光光源和微透镜阵列，所述微透镜阵列位于所述背光光源上方。所述微透镜阵列包括支撑板100，所述支撑板100包括靠近所述背光光源的第一表面和远离所述背光光源的第二表面，所述第一表面具有多个入光结构220，所述第二表面具有多个与所述多个入光结构220对应的出光结构210，所述多个入光结构220和与所述多个入光结构220对应的多个出光结构210构成多个微透镜结构。\n\n[0033]本实施例中，所述多个入光结构220通过第一模具在所述第一表面上压滚成型，所述多个出光结构210通过第二模具在所述第二表面上压滚成型。\n\n[0034]所述背光光源包括多个设置在灯板500上的次毫米发光二极管400。优选的，所述背光光源包括多个灯板500，所述灯板500为条状灯板，所述多个次毫米发光二极管400沿第一方向呈条状排列。所述多个灯板500沿第二方向排列，所述第二方向与所述第一方向垂直。所述多个次毫米发光二极管400与所述多个微透镜结构一一对应。\n\n[0035]参见图2，本申请中，每一个所述入光结构220包括第一突起结构。所述第一突起结构具有第一表面222，所述第一表面222与所述灯板400的表面贴合。所述第一突起结构还包括第一凹陷部221，所述第一凹陷部221位于所述第一表面222的几何中心处，与所述次毫米发光二极管相对应，所述第一凹陷部221的表面构成所述微透镜结构的入光面。\n\n[0036]本申请中，所述第一凹陷部221为半球形结构，与所述入光结构220对应的次毫米发光二极管位于所述半球形结构的球心处。\n\n[0037]本申请中，每一个所述出光结构210包括第二突起结构。所述第二突起结构具有第二凹陷部211，所述第二凹陷部211位于所述第二突起结构的几何中心处，所述第二突起结构的几何中心A和所述第一突起结构的几何中心A’重合。\n\n[0038]本实施例中，所述第二突起结构还包括第二环形部212，所述第二环形部212环绕所述第二凹陷部211，所述第二环形部212的表面为连接所述第二凹陷部211的边界和所述支撑板100的表面的平滑曲面。\n\n[0039]本申请中，形成所述支撑板100、所述第一突起结构和所述第二突起结构的材料为透光材料，所述透光材料具有热塑性。由于次毫米发光二极管的尺寸很小，现有技术中的透镜阵列的生产方法无法生产出毫米级的微透镜。本申请中采用具有热塑性的透光材料，通过模具在所述透光材料表面压印形成微透镜阵列。这种方法能够形成具有各种形状和尺寸的微透镜阵列，满足次毫米发光二极管对透镜尺寸的要求。同时，这种方法工艺简单，成本低廉，便于批量生产，能够极大的提高使用次毫米发光二极管的背光结构的混光效果。\n\n[0040]本申请中，所述第二凹陷部211的表面为反光材料构成的镜面结构，构成所述微透镜结构的反射面。所述第二环形部212的表面构成所述微透镜结构的出光面。所述第一凹陷部221和所述第二凹陷部211的几何中心重合，所述第一凹陷部221在所述支撑板100上的投影为圆形，所述第二凹陷部211在所述支撑板100上的投影为圆形，所述第一凹陷部221在所述支撑板100上的投影覆盖所述第二凹陷部211在所述支撑板100上的投影。\n\n[0041]本申请中，所述微透镜阵列还包括多个支撑柱300，所述多个支撑柱300设置在所述支撑板100的第二表面上，每一个支撑柱300位于两个相邻的微透镜结构之间。\n\n[0042]本实施例中，所述支撑柱300的高度相同，一方面用于分散其他光学膜片施加到所述微透镜阵列上的压力，避免所述微透镜阵列因为受力不均产生裂纹。另一方面也能够保证所述微透镜阵列和其他光学膜片之间的距离保持恒定。优选的，为了避免所述支撑柱300在显示面板上形成光斑或阴影，形成所述多个支撑柱300的材料为白色材料或透明材料，所述多个支撑柱300表面具有漫反射结构。\n\n[0043]相应的，本申请还提供了一种显示面板，所述显示面板包括如前所述的背光结构。\n\n[0044]本申请提供了一种背光结构，所述背光结构具有支撑板，所述支撑板的第一表面具有多个入光结构，所述支撑板的第二表面具有多个与所述多个入光结构对应的出光结构，所述多个入光结构和与多个出光结构构成多个微透镜结构。本申请中，所述多个入光结构和多个出光结构采用不同的模具压滚成型。本申请提供的微透镜阵列通过压滚成型的方法制作，能够形成大面积的适用于Mini-LED的微透镜阵列，解决了现有技术中微透镜阵列无法适用于Mini-LED的技术问题。\n\n[0045]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本申请涉及电子显示领域，尤其涉及一种背光结构和显示面板。\n\n背景技术\n\n[0002]次毫米发光二极管(mini-LED)极大的降低了液晶面板中背光光源的尺寸，可以让背光单元的尺寸小于100微米，将背光光源薄膜化、微小化、阵列化使用mini-LED的液晶面板能够实现每个图元单独定址，单独驱动发光。\n\n[0003]由于传统的微透镜结构尺寸过大，无法应用在Mini-LED背光结构中，而利用注塑成型方案实现的微透镜阵列通常面积较小。因此，急需一种适用于Mini-LED的微透镜结构，以进一步提高Mini-LED的光扩散效果，从而减小Mini-LED的数量以减小成本。\n\n[0004]申请内容\n\n[0005]本申请提供了一种背光结构和显示面板，所述背光结构具有适用于Mini-LED的微透镜阵列。\n\n[0006]为解决上述问题，本申请提供了一种背光结构，所述背光结构包括：\n\n[0007]背光光源；\n\n[0008]微透镜阵列，所述微透镜阵列位于所述背光光源上方；\n\n[0009]其中，所述微透镜阵列包括支撑板，所述支撑板包括靠近所述背光光源的第一表面和远离所述背光光源的第二表面，所述第一表面具有多个入光结构，所述第二表面具有多个与所述多个入光结构对应的出光结构，所述多个入光结构和与所述多个入光结构对应的多个出光结构构成多个微透镜结构；\n\n[0010]其中，所述多个入光结构通过第一模具在所述第一表面上压滚成型，所述多个出光结构通过第二模具在所述第二表面上压滚成型。\n\n[0011]根据本申请的其中一个方面，所述背光光源包括多个设置在灯板上的次毫米发光二极管，所述多个次毫米发光二极管与所述多个微透镜结构一一对应。\n\n[0012]根据本申请的其中一个方面，每一个所述入光结构包括第一突起结构；其中，\n\n[0013]所述第一突起结构具有第一表面，所述第一表面与所述灯板的表面贴合；\n\n[0014]所述第一突起结构还包括第一凹陷部，所述第一凹陷部位于所述第一表面的几何中心处，与所述次毫米发光二极管相对应，所述第一凹陷部的表面构成所述微透镜结构的入光面。\n\n[0015]根据本申请的其中一个方面，所述第一凹陷部为半球形结构，与所述入光结构对应的次毫米发光二极管位于所述半球形结构的球心处。\n\n[0016]根据本申请的其中一个方面，每一个所述出光结构包括第二突起结构；其中，\n\n[0017]所述第二突起结构具有第二凹陷部，所述第二凹陷部位于所述第二突起结构的几何中心处，所述第二突起结构的几何中心和所述第一突起结构的几何中心重合；\n\n[0018]所述第二突起结构还包括第二环形部，所述第二环形部环绕所述第二凹陷部，所述第二环形部的表面为连接所述第二凹陷部的边界和所述支撑板的表面的平滑曲面。\n\n[0019]根据本申请的其中一个方面，形成所述支撑板、所述第一突起结构和所述第二突起结构的材料为透光材料，所述透光材料具有热塑性。\n\n[0020]根据本申请的其中一个方面，所述第二凹陷部的表面为反光材料构成的镜面结构，构成所述微透镜结构的反射面；所述第二环形部的表面构成所述微透镜结构的出光面。\n\n[0021]根据本申请的其中一个方面，所述第一凹陷部和所述第二凹陷部的几何中心重合，所述第一凹陷部在所述支撑板上的投影为圆形，所述第二凹陷部在所述支撑板上的投影为圆形，所述第一凹陷部在所述支撑板上的投影覆盖所述第二凹陷部在所述支撑板上的投影。\n\n[0022]根据本申请的其中一个方面，所述微透镜阵列还包括多个支撑柱，所述多个支撑柱设置在所述支撑板的第二表面上，每一个支撑柱位于两个相邻的微透镜结构之间。\n\n[0023]根据本申请的其中一个方面，所述多个支撑柱具有相同的高度，所述多个支撑柱表面具有漫反射结构。\n\n[0024]根据本申请的其中一个方面，所述多个微透镜结构沿第一方向呈条状排列。\n\n[0025]相应的，本申请还提供了一种显示面板，所述显示面板包括如前所述的背光结构。\n\n[0026]本申请提供了一种背光结构，所述背光结构具有支撑板，所述支撑板的第一表面具有多个入光结构，所述支撑板的第二表面具有多个与所述多个入光结构对应的出光结构，所述多个入光结构和与多个出光结构构成多个微透镜结构。本申请中，所述多个入光结构和多个出光结构采用不同的模具压滚成型。本申请提供的微透镜阵列通过压滚成型的方法制作，能够形成大面积的适用于Mini-LED的微透镜阵列，解决了现有技术中微透镜阵列无法适用于Mini-LED的技术问题。\n\n附图说明\n\n[0027]图1为本申请的一个具体实施例中的微透镜阵列的结构示意图；\n\n[0028]图2为图1中微透镜阵列中的一个微透镜的结构示意图；\n\n[0029]图3为本申请的一个具体实施例中的背光结构的结构示意图。\n\n具体实施方式\n\n[0030]以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。\n\n[0031]本申请提供了一种背光结构和显示面板，所述背光结构具有适用于Mini-LED的微透镜阵列。参见图1、图2和图3，图1为本申请的一个具体实施例中的微透镜阵列的结构示意图，图2为图1中微透镜阵列中的一个微透镜的结构示意图，图3为本申请的一个具体实施例中的背光结构的结构示意图。\n\n[0032]参见图3，所述背光结构包括背光光源和微透镜阵列，所述微透镜阵列位于所述背光光源上方。所述微透镜阵列包括支撑板100，所述支撑板100包括靠近所述背光光源的第一表面和远离所述背光光源的第二表面，所述第一表面具有多个入光结构220，所述第二表面具有多个与所述多个入光结构220对应的出光结构210，所述多个入光结构220和与所述多个入光结构220对应的多个出光结构210构成多个微透镜结构。\n\n[0033]本实施例中，所述多个入光结构220通过第一模具在所述第一表面上压滚成型，所述多个出光结构210通过第二模具在所述第二表面上压滚成型。\n\n[0034]所述背光光源包括多个设置在灯板500上的次毫米发光二极管400。优选的，所述背光光源包括多个灯板500，所述灯板500为条状灯板，所述多个次毫米发光二极管400沿第一方向呈条状排列。所述多个灯板500沿第二方向排列，所述第二方向与所述第一方向垂直。所述多个次毫米发光二极管400与所述多个微透镜结构一一对应。\n\n[0035]参见图2，本申请中，每一个所述入光结构220包括第一突起结构。所述第一突起结构具有第一表面222，所述第一表面222与所述灯板400的表面贴合。所述第一突起结构还包括第一凹陷部221，所述第一凹陷部221位于所述第一表面222的几何中心处，与所述次毫米发光二极管相对应，所述第一凹陷部221的表面构成所述微透镜结构的入光面。\n\n[0036]本申请中，所述第一凹陷部221为半球形结构，与所述入光结构220对应的次毫米发光二极管位于所述半球形结构的球心处。\n\n[0037]本申请中，每一个所述出光结构210包括第二突起结构。所述第二突起结构具有第二凹陷部211，所述第二凹陷部211位于所述第二突起结构的几何中心处，所述第二突起结构的几何中心A和所述第一突起结构的几何中心A’重合。\n\n[0038]本实施例中，所述第二突起结构还包括第二环形部212，所述第二环形部212环绕所述第二凹陷部211，所述第二环形部212的表面为连接所述第二凹陷部211的边界和所述支撑板100的表面的平滑曲面。\n\n[0039]本申请中，形成所述支撑板100、所述第一突起结构和所述第二突起结构的材料为透光材料，所述透光材料具有热塑性。由于次毫米发光二极管的尺寸很小，现有技术中的透镜阵列的生产方法无法生产出毫米级的微透镜。本申请中采用具有热塑性的透光材料，通过模具在所述透光材料表面压印形成微透镜阵列。这种方法能够形成具有各种形状和尺寸的微透镜阵列，满足次毫米发光二极管对透镜尺寸的要求。同时，这种方法工艺简单，成本低廉，便于批量生产，能够极大的提高使用次毫米发光二极管的背光结构的混光效果。\n\n[0040]本申请中，所述第二凹陷部211的表面为反光材料构成的镜面结构，构成所述微透镜结构的反射面。所述第二环形部212的表面构成所述微透镜结构的出光面。所述第一凹陷部221和所述第二凹陷部211的几何中心重合，所述第一凹陷部221在所述支撑板100上的投影为圆形，所述第二凹陷部211在所述支撑板100上的投影为圆形，所述第一凹陷部221在所述支撑板100上的投影覆盖所述第二凹陷部211在所述支撑板100上的投影。\n\n[0041]本申请中，所述微透镜阵列还包括多个支撑柱300，所述多个支撑柱300设置在所述支撑板100的第二表面上，每一个支撑柱300位于两个相邻的微透镜结构之间。\n\n[0042]本实施例中，所述支撑柱300的高度相同，一方面用于分散其他光学膜片施加到所述微透镜阵列上的压力，避免所述微透镜阵列因为受力不均产生裂纹。另一方面也能够保证所述微透镜阵列和其他光学膜片之间的距离保持恒定。优选的，为了避免所述支撑柱300在显示面板上形成光斑或阴影，形成所述多个支撑柱300的材料为白色材料或透明材料，所述多个支撑柱300表面具有漫反射结构。\n\n[0043]相应的，本申请还提供了一种显示面板，所述显示面板包括如前所述的背光结构。\n\n[0044]本申请提供了一种背光结构，所述背光结构具有支撑板，所述支撑板的第一表面具有多个入光结构，所述支撑板的第二表面具有多个与所述多个入光结构对应的出光结构，所述多个入光结构和与多个出光结构构成多个微透镜结构。本申请中，所述多个入光结构和多个出光结构采用不同的模具压滚成型。本申请提供的微透镜阵列通过压滚成型的方法制作，能够形成大面积的适用于Mini-LED的微透镜阵列，解决了现有技术中微透镜阵列无法适用于Mini-LED的技术问题。\n\n[0045]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10669, 23723, '技术领域\n\n[0001]本申请涉及显示技术领域，特别涉及一种Micro LED显示面板及显示装置。\n\n背景技术\n\n[0002]Micro-LED是一种将LED结构微小化和矩阵化，对每一个像素点单独驱动和定址控制的显示技术。由于Micro-LED技术的亮度、寿命、对比度、反应时间、能耗、可视角度和分辨率等各种指标均优于LCD和OLED技术，被视为能超越OLED及传统LED的新一代显示技术。\n\n[0003]但是，现有技术中，Micro LED显示面板都需要在其显示区域的四周边缘设置GOA电路，导致Micro LED显示面板存在边框，有效显示面积较小，屏占比较低。\n\n[0004]因此，现有技术存在缺陷，急需改进。\n\n发明内容\n\n[0005]本申请提供一种Micro LED显示面板及显示装置，可以提高屏占比。\n\n[0006]本申请提供了一种Micro LED显示面板，包括：GOA驱动电路、多条数据线、多条扫描线以及多个像素单元；\n\n[0007]所述多条扫描线和所述多条数据线纵横交错设置，且相邻两条所述扫描线和相邻两条数据线之间围成像素区以形成多个阵列排布的像素区，每一所述像素区设置有一所述像素单元；\n\n[0008]所述GOA驱动电路包括多个级联的GOA单元，每一行所述像素区内设置一级GOA单元，其中，第n行扫描线与第n+1行扫描线之间的GOA单元为第n级GOA单元，且所述第n级GOA单元分别与所述第n行扫描线与第n+1行扫描线连接。\n\n[0009]在本申请所述的Micro LED显示面板中，所述GOA单元包括多个薄膜晶体管，所述多个薄膜晶体管分别位于不同的像素区内。\n\n[0010]在本申请所述的Micro LED显示面板中，所述第n级GOA单元包括第一薄膜晶体管、第二薄膜晶体管、第三薄膜晶体管以及第四薄膜晶体管；\n\n[0011]所述第一薄膜晶体管的栅极与所述第一薄膜晶体管的漏极连接并与上一级的扫描信号输出端连接，所述第一薄膜晶体管的源极分别与所述第四薄膜晶体管的漏极以及所述第二薄膜晶体管的栅极连接；所述第二薄膜晶体管的漏极接入时钟信号，所述第二薄膜晶体管的源极与第n行的扫描线连接，所述第三薄膜晶体管的栅极与第n+1级扫描线连接，所述第三薄膜晶体管的漏极与所述第n行的扫描线连接，所述第三薄膜晶体管的源极以及所述第四薄膜晶体管的源极接入低电平信号。\n\n[0012]在本申请所述的Micro LED显示面板中，所述第四薄膜晶体管位于第m列像素区内，所述第一薄膜晶体管位于第m+1列像素区内，所述第二薄膜晶体管位于第m+2列像素区内，所述第三薄膜晶体管位于第m+3列像素区内。\n\n[0013]在本申请所述的Micro LED显示面板中，所述m等于1。\n\n[0014]在本申请所述的Micro LED显示面板中，所述Micro LED显示面板还包括用于提供低电平信号的低电平信号线，所述低电平信号线沿着所述扫描线的方向延伸，所述第三薄膜晶体管的源极以及所述第四薄膜晶体管的源极与所述低电平信号线电连接。\n\n[0015]在本申请所述的Micro LED显示面板中，所述Micro LED显示面板还包括用于提供时钟信号的时钟信号线，所述时钟信号线沿着所述数据线的方向延伸，所述第二薄膜晶体管的漏极与所述时钟信号线连接。\n\n[0016]在本申请所述的Micro LED显示面板中，每一行的GOA单元的所述第四薄膜晶体管位于第m列像素区内，每一行的GOA单元的所述第一薄膜晶体管位于第m+1列像素区内，每一行的GOA单元的所述第二薄膜晶体管位于第m+2列像素区内，每一行的GOA单元的所述第三薄膜晶体管位于第m+3列像素区内。\n\n[0017]在本申请所述的Micro LED显示面板中，所述第一薄膜晶体管、第二薄膜晶体管、第三薄膜晶体管以及第四薄膜晶体管均为氧化物半导体薄膜晶体管。\n\n[0018]一种显示装置，包括上述任一项所述的Micro LED显示面板。\n\n[0019]本申请通过将GOA驱动电路的各个GOA单元分别设置到像素区内，从而减小了边框尺寸，提高了屏占比。\n\n附图说明\n\n[0020]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0021]图1是本申请一些实施例中的一种Micro LED显示面板的结构图。\n\n[0022]图2是本申请一些实施例中的第N级GOA单元的电路结构图。\n\n具体实施方式\n\n[0023]下面详细描述本发明的实施方式，所述实施方式的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。\n\n[0024]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0025]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0026]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0027]下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0028]请同时参阅图1以及图2，图1是本发明一些实施例中的一种Micro LED显示面板的结构图。该Micro LED显示面板包括：GOA驱动电路、多条数据线Dm、多条扫描线G(n)、多个像素单元、低电平线VSS、时钟信号线CK。\n\n[0029]其中，该多条扫描线G(n)和所述多条数据线Dm纵横交错设置，且相邻两条所述扫描线G(n)和相邻两条数据线Dm之间围成像素区100以形成多个阵列排布的像素区100，每一所述像素区设100置有一所述像素单元。\n\n[0030]具体地，该GOA驱动电路包括多个级联的GOA单元200，每一行所述像素区100内设置一级GOA单元200，其中，第n行扫描线G(n)与第n+1行扫描线G(n+1)之间的GOA单元200为第n级GOA单元，且所述第n级GOA单元分别与所述第n行扫描线G(n)与第n+1行扫描线G(n+1)连接。\n\n[0031]在一些实施例中，该GOA单元包括多个薄膜晶体管，所述多个薄膜晶体管分别位于不同的像素区内。GOA单元采用薄膜晶体管连接形成属于现有技术，其可以采用各种连接方式形成各种GOA单元。\n\n[0032]具体地，在本实施例中，该第n级GOA单元包括第一薄膜晶体管T11、第二薄膜晶体管T21、第三薄膜晶体管T31以及第四薄膜晶体管T41；该第一薄膜晶体管T11的栅极与所述第一薄膜晶体管T11的漏极连接并与上一级的扫描信号输出端连接，所述第一薄膜晶体管T11的源极分别与所述第四薄膜晶体T41管的漏极以及所述第二薄膜晶体管T21的栅极连接；所述第二薄膜晶体管T21的漏极接入时钟信号，所述第二薄膜晶体管T21的源极与第n行的扫描线连接，所述第三薄膜晶体管T31的栅极与第n+1级扫描线连接，所述第三薄膜晶体管T31的漏极与所述第n行的扫描线连接，所述第三薄膜晶体管T31的源极以及所述第四薄膜晶体管T41的源极接入低电平信号。\n\n[0033]其中，该第四薄膜晶体管T41位于第m列像素区100内，所述第一薄膜晶体管T11位于第m+1列像素区100内，所述第二薄膜晶体管T21位于第m+2列像素区100内，所述第三薄膜晶体管T31位于第m+3列像素区100内。其中，该m等于1。\n\n[0034]该低电平信号线VSS用于提供低电平信号，所述低电平信号线VSS沿着所述扫描线的方向延伸，所述第三薄膜晶体管T31的源极以及所述第四薄膜晶体管T41的源极与所述低电平信号线VSS电连接。\n\n[0035]该时钟信号线CK用于提供时钟信号，时钟信号线CK沿着所述数据线的方向延伸，所述第二薄膜晶体管的漏极与所述时钟信号线连接。\n\n[0036]其中，每一行的GOA单元的所述第四薄膜晶体管位于第m列像素区内，每一行的GOA单元的所述第一薄膜晶体管位于第m+1列像素区内，每一行的GOA单元的所述第二薄膜晶体管位于第m+2列像素区内，每一行的GOA单元的所述第三薄膜晶体管位于第m+3列像素区内。从而可以减少时钟信号线的条数，使得所有GOA单元可以共用该条时钟信号线。\n\n[0037]在一些实施例中，该第一薄膜晶体管T11、第二薄膜晶体管T21、第三薄膜晶体管T31以及第四薄膜晶体管T41均为NMOS管，且为氧化物半导体薄膜晶体管。\n\n[0038]本申请通过将GOA驱动电路的各个GOA单元分别设置到像素区内，从而减小了边框尺寸，提高了屏占比。\n\n[0039]本申请还提供了一种显示装置，包括上述任一项所述的Micro LED显示面板。\n\n[0040]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本申请涉及显示技术领域，特别涉及一种Micro LED显示面板及显示装置。\n\n背景技术\n\n[0002]Micro-LED是一种将LED结构微小化和矩阵化，对每一个像素点单独驱动和定址控制的显示技术。由于Micro-LED技术的亮度、寿命、对比度、反应时间、能耗、可视角度和分辨率等各种指标均优于LCD和OLED技术，被视为能超越OLED及传统LED的新一代显示技术。\n\n[0003]但是，现有技术中，Micro LED显示面板都需要在其显示区域的四周边缘设置GOA电路，导致Micro LED显示面板存在边框，有效显示面积较小，屏占比较低。\n\n[0004]因此，现有技术存在缺陷，急需改进。\n\n发明内容\n\n[0005]本申请提供一种Micro LED显示面板及显示装置，可以提高屏占比。\n\n[0006]本申请提供了一种Micro LED显示面板，包括：GOA驱动电路、多条数据线、多条扫描线以及多个像素单元；\n\n[0007]所述多条扫描线和所述多条数据线纵横交错设置，且相邻两条所述扫描线和相邻两条数据线之间围成像素区以形成多个阵列排布的像素区，每一所述像素区设置有一所述像素单元；\n\n[0008]所述GOA驱动电路包括多个级联的GOA单元，每一行所述像素区内设置一级GOA单元，其中，第n行扫描线与第n+1行扫描线之间的GOA单元为第n级GOA单元，且所述第n级GOA单元分别与所述第n行扫描线与第n+1行扫描线连接。\n\n[0009]在本申请所述的Micro LED显示面板中，所述GOA单元包括多个薄膜晶体管，所述多个薄膜晶体管分别位于不同的像素区内。\n\n[0010]在本申请所述的Micro LED显示面板中，所述第n级GOA单元包括第一薄膜晶体管、第二薄膜晶体管、第三薄膜晶体管以及第四薄膜晶体管；\n\n[0011]所述第一薄膜晶体管的栅极与所述第一薄膜晶体管的漏极连接并与上一级的扫描信号输出端连接，所述第一薄膜晶体管的源极分别与所述第四薄膜晶体管的漏极以及所述第二薄膜晶体管的栅极连接；所述第二薄膜晶体管的漏极接入时钟信号，所述第二薄膜晶体管的源极与第n行的扫描线连接，所述第三薄膜晶体管的栅极与第n+1级扫描线连接，所述第三薄膜晶体管的漏极与所述第n行的扫描线连接，所述第三薄膜晶体管的源极以及所述第四薄膜晶体管的源极接入低电平信号。\n\n[0012]在本申请所述的Micro LED显示面板中，所述第四薄膜晶体管位于第m列像素区内，所述第一薄膜晶体管位于第m+1列像素区内，所述第二薄膜晶体管位于第m+2列像素区内，所述第三薄膜晶体管位于第m+3列像素区内。\n\n[0013]在本申请所述的Micro LED显示面板中，所述m等于1。\n\n[0014]在本申请所述的Micro LED显示面板中，所述Micro LED显示面板还包括用于提供低电平信号的低电平信号线，所述低电平信号线沿着所述扫描线的方向延伸，所述第三薄膜晶体管的源极以及所述第四薄膜晶体管的源极与所述低电平信号线电连接。\n\n[0015]在本申请所述的Micro LED显示面板中，所述Micro LED显示面板还包括用于提供时钟信号的时钟信号线，所述时钟信号线沿着所述数据线的方向延伸，所述第二薄膜晶体管的漏极与所述时钟信号线连接。\n\n[0016]在本申请所述的Micro LED显示面板中，每一行的GOA单元的所述第四薄膜晶体管位于第m列像素区内，每一行的GOA单元的所述第一薄膜晶体管位于第m+1列像素区内，每一行的GOA单元的所述第二薄膜晶体管位于第m+2列像素区内，每一行的GOA单元的所述第三薄膜晶体管位于第m+3列像素区内。\n\n[0017]在本申请所述的Micro LED显示面板中，所述第一薄膜晶体管、第二薄膜晶体管、第三薄膜晶体管以及第四薄膜晶体管均为氧化物半导体薄膜晶体管。\n\n[0018]一种显示装置，包括上述任一项所述的Micro LED显示面板。\n\n[0019]本申请通过将GOA驱动电路的各个GOA单元分别设置到像素区内，从而减小了边框尺寸，提高了屏占比。\n\n附图说明\n\n[0020]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0021]图1是本申请一些实施例中的一种Micro LED显示面板的结构图。\n\n[0022]图2是本申请一些实施例中的第N级GOA单元的电路结构图。\n\n具体实施方式\n\n[0023]下面详细描述本发明的实施方式，所述实施方式的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。\n\n[0024]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0025]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0026]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0027]下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0028]请同时参阅图1以及图2，图1是本发明一些实施例中的一种Micro LED显示面板的结构图。该Micro LED显示面板包括：GOA驱动电路、多条数据线Dm、多条扫描线G(n)、多个像素单元、低电平线VSS、时钟信号线CK。\n\n[0029]其中，该多条扫描线G(n)和所述多条数据线Dm纵横交错设置，且相邻两条所述扫描线G(n)和相邻两条数据线Dm之间围成像素区100以形成多个阵列排布的像素区100，每一所述像素区设100置有一所述像素单元。\n\n[0030]具体地，该GOA驱动电路包括多个级联的GOA单元200，每一行所述像素区100内设置一级GOA单元200，其中，第n行扫描线G(n)与第n+1行扫描线G(n+1)之间的GOA单元200为第n级GOA单元，且所述第n级GOA单元分别与所述第n行扫描线G(n)与第n+1行扫描线G(n+1)连接。\n\n[0031]在一些实施例中，该GOA单元包括多个薄膜晶体管，所述多个薄膜晶体管分别位于不同的像素区内。GOA单元采用薄膜晶体管连接形成属于现有技术，其可以采用各种连接方式形成各种GOA单元。\n\n[0032]具体地，在本实施例中，该第n级GOA单元包括第一薄膜晶体管T11、第二薄膜晶体管T21、第三薄膜晶体管T31以及第四薄膜晶体管T41；该第一薄膜晶体管T11的栅极与所述第一薄膜晶体管T11的漏极连接并与上一级的扫描信号输出端连接，所述第一薄膜晶体管T11的源极分别与所述第四薄膜晶体T41管的漏极以及所述第二薄膜晶体管T21的栅极连接；所述第二薄膜晶体管T21的漏极接入时钟信号，所述第二薄膜晶体管T21的源极与第n行的扫描线连接，所述第三薄膜晶体管T31的栅极与第n+1级扫描线连接，所述第三薄膜晶体管T31的漏极与所述第n行的扫描线连接，所述第三薄膜晶体管T31的源极以及所述第四薄膜晶体管T41的源极接入低电平信号。\n\n[0033]其中，该第四薄膜晶体管T41位于第m列像素区100内，所述第一薄膜晶体管T11位于第m+1列像素区100内，所述第二薄膜晶体管T21位于第m+2列像素区100内，所述第三薄膜晶体管T31位于第m+3列像素区100内。其中，该m等于1。\n\n[0034]该低电平信号线VSS用于提供低电平信号，所述低电平信号线VSS沿着所述扫描线的方向延伸，所述第三薄膜晶体管T31的源极以及所述第四薄膜晶体管T41的源极与所述低电平信号线VSS电连接。\n\n[0035]该时钟信号线CK用于提供时钟信号，时钟信号线CK沿着所述数据线的方向延伸，所述第二薄膜晶体管的漏极与所述时钟信号线连接。\n\n[0036]其中，每一行的GOA单元的所述第四薄膜晶体管位于第m列像素区内，每一行的GOA单元的所述第一薄膜晶体管位于第m+1列像素区内，每一行的GOA单元的所述第二薄膜晶体管位于第m+2列像素区内，每一行的GOA单元的所述第三薄膜晶体管位于第m+3列像素区内。从而可以减少时钟信号线的条数，使得所有GOA单元可以共用该条时钟信号线。\n\n[0037]在一些实施例中，该第一薄膜晶体管T11、第二薄膜晶体管T21、第三薄膜晶体管T31以及第四薄膜晶体管T41均为NMOS管，且为氧化物半导体薄膜晶体管。\n\n[0038]本申请通过将GOA驱动电路的各个GOA单元分别设置到像素区内，从而减小了边框尺寸，提高了屏占比。\n\n[0039]本申请还提供了一种显示装置，包括上述任一项所述的Micro LED显示面板。\n\n[0040]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10670, 23724, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种Micro-LED芯片的转移方法及Micro-LED显示面板。\n\n背景技术\n\n[0002]Micro-LED(微型无机发光二极管)芯片是将传统的LED(发光二极管)结构进行微小化和矩阵化，并采用CMOS(互补金属氧化物半导体)集成电路制成驱动电路，来实现每一个像素点定址控制和单独驱动的显示技术。Micro-LED芯片具有自发光、结构简单、体积小和节能的有点，已经被许多厂家视为下一代显示技术而开始积极布局。Micro-LED芯片通常为尺寸小于50um而厚度小于10um的薄片，故需要采用转移的方式把Micro-LED芯片转移到目标基板上。目前，为了实现Micro-LED芯片与目标基板的电性连接，通常会在Micro-LED芯片及目标基板上分别制作贵金属电极层，再在Micro-LED芯片上形成焊接层材料。然而，由于该制程需要在目标基板上制作贵金属层，且需要在Micro-LED芯片上再单独制作焊接层，制程复杂，且由于会采用蚀刻工艺，会浪费掉大量的贵金属材料和焊材，导致成本高昂。\n\n[0003]综上所述，现有的Micro-LED芯片的转移方法及Micro-LED显示面板，需要在目标基板上制作贵金属层且同时需要在Micro-LED芯片上单独制作焊接层，由于采用蚀刻工艺，导致大量的贵金属材料和焊材浪费，进一步导致成本高昂。\n\n发明内容\n\n[0004]本发明提供一种Micro-LED芯片的转移方法及Micro-LED显示面板，能够实现了省去Micro-LED芯片上金属焊层工艺制程及与目标基板贵金属电极工艺制程的目的，以解决现有的Micro-LED芯片转移的方法及Micro-LED显示面板，需要在目标基板上制作贵金属层且同时需要在Micro-LED芯片上单独制作焊接层，由于采用蚀刻工艺，导致大量的贵金属材料和焊材浪费，进一步导致成本高昂的技术问题。\n\n[0005]为解决上述问题，本发明提供的技术方案如下：\n\n[0006]本发明提供一种Micro-LED芯片的转移方法，所述方法包括：\n\n[0007]S10，提供一目标基板，所述目标基板的表面设置有多个凹槽结构，在每一所述凹槽结构内沉积一层金属膜层，形成第一金属电极；\n\n[0008]S20，提供一种转移头，所述转移头上设置有多个吸头，每一所述吸头的位置与每一所述凹槽结构的位置相对应，将所述转移头通过所述吸头吸取导电胶体；\n\n[0009]S30，将所述转移头上的每一所述吸头对准与其相对应的所述凹槽结构，释放所述转移头中的所述导电胶体，使所述导电胶体放置于所述凹槽结构内；\n\n[0010]S40，将多个含有第二金属电极的MicroLED芯片通过转移基板转移至所述目标基板对应的所述凹槽结构上，使所述第二金属电极与所述导电胶体相接触；\n\n[0011]S50，通过加热方式固化所述导电胶体，实现所述Micro-LED芯片与所述目标基板可靠电性连接。\n\n[0012]根据本发明一优选实施例，所述步骤S10中，多个所述凹槽结构呈阵列状分布，每一所述凹槽结构的底面形状为方形。\n\n[0013]根据本发明一优选实施例，所述步骤S10中，所述目标基板为印刷电路板、TFT基板以及CMOS基板中的任意一种。\n\n[0014]根据本发明一优选实施例，所述步骤S10与所述步骤S40中，所述第一金属电极以及所述第二金属电极为Au、Ag、Au/AuSn、Au/AuTi中的任意一种。\n\n[0015]根据本发明一优选实施例，所述步骤S20中，多个所述吸头为镂空结构，多个所述吸头的底面为圆形。\n\n[0016]根据本发明一优选实施例，所述步骤S20中，所述导电胶体为银溶胶、金溶胶、纳米银溶液/溶胶、纳米银线溶液/溶胶、石墨烯溶液/溶胶、异方性导电胶中的任意一种。\n\n[0017]根据本发明一优选实施例，所述步骤S50中，所述加热方式包括对所述目标基板进行直接加热或者通过红外线加热所述目标基板。\n\n[0018]本发明还提供一种Micro-LED显示面板，包括目标基板、第一金属电极、导电材料层、第二金属电极以及Micro-LED芯片，所述目标基板表面具有多个凹槽结构，所述第一金属电极以及所述导电材料层设置于所述凹槽结构内，所述第二金属电极设置于所述Micro-LED芯片上并与所述导电材料层相接触。\n\n[0019]根据本发明一优选实施例，多个所述凹槽结构呈阵列状分布，每一所述凹槽结构的底面形状为方形。\n\n[0020]根据本发明一优选实施例，所述第一金属电极以及所述第二金属电极为Au、Ag、Au/AuSn、Au/AuTi中的任意一种。\n\n[0021]本发明的有益效果为：本发明所提供的Micro-LED芯片的转移方法及Micro-LED显示面板，通过在目标基板上设置凹槽结构并采用转移头将导电胶体焊接材释放到凹槽结构内，节省了材料成本和工艺制程，进一步提高了生产速率。\n\n附图说明\n\n[0022]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0023]图1为本发明Micro-LED芯片的转移方法流程图。\n\n[0024]图2A-2E为图1所述Micro-LED芯片的转移方法的结构示意图。\n\n[0025]图3为本发明Micro-LED芯片的转移方法中目标基板的俯视图。\n\n[0026]图4为本发明Micro-LED芯片的转移方法中转移头的横截面示意图。\n\n[0027]图5为本发明Micro-LED显示面板的结构示意图。\n\n具体实施方式\n\n[0028]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0029]本发明针对现有的Micro-LED芯片的转移方法及Micro-LED显示面板，需要在目标基板上制作贵金属层且同时需要在Micro-LED芯片上单独制作焊接层，由于采用蚀刻工艺，导致大量的贵金属材料和焊材浪费，进一步导致成本高昂的技术问题，本实施例能够解决该缺陷。\n\n[0030]如图1所示，为本发明Micro-LED芯片的转移方法流程图。其中，所述方法包括：\n\n[0031]S10，提供一目标基板11，所述目标基板11的表面设置有多个凹槽结构12，在每一所述凹槽结构12内沉积一层金属膜层，形成第一金属电极13。\n\n[0032]具体的，所述S10还包括：\n\n[0033]首先，提供一目标基板11，所述目标基板11为印刷电路板、TFT基板以及CMOS(互补金属氧化物半导体)基板中的任意一种，所述目标基板11的表面设置有多个凹槽结构12，多个所述凹槽结构12的大小以及形状完全相同；之后，在每一所述凹槽结构12内沉积一层金属膜层，形成第一金属电极13，所述第一金属电极13为Au、Ag、Au/AuSn、Au/AuTi中的任意一种，如图2A所示。\n\n[0034]S20，提供一种转移头21，所述转移头21上设置有多个吸头22，每一所述吸头22的位置与每一所述凹槽结构12的位置相对应，将所述转移头21通过所述吸头22吸取导电胶体30。\n\n[0035]具体的，所述S20还包括：\n\n[0036]提供一种转移头21，所述转移头21上设置有多个吸头22，每一所述吸头22的位置与每一所述凹槽结构12的位置相对应，所述转移头21可以真空吸取焊料，多个所述吸头22为镂空结构，且所述吸头22可以把液态或流体状的导电材料吸入吸头22。之后，将所述转移头21通过所述吸头22吸取导电胶体30，所述导电胶体30为银溶胶、金溶胶、纳米银溶液/溶胶、纳米银线溶液/溶胶、石墨烯溶液/溶胶、异方性导电胶中的任意一种，如图2B所示。\n\n[0037]S30，将所述转移头21上的每一所述吸头22对准与其相对应的所述凹槽结构12，释放所述转移头21中的所述导电胶体30，使所述导电胶体30放置于所述凹槽结构12内。\n\n[0038]具体的，所述S30还包括：\n\n[0039]将所述转移头21上的每一所述吸头22对准与其相对应的所述凹槽结构12，释放所述转移头21中的所述导电胶体30，使所述导电胶体30正好放置于所述凹槽结构12内，所述导电胶体30位于所述第一金属电极13上并完全覆盖所述凹槽结构12，如图2C所示。\n\n[0040]S40，将多个含有第二金属电极42的MicroLED芯片41通过转移基板转移至所述目标基板11对应的所述凹槽结构12上，使所述第二金属电极42与所述导电胶体30相接触。\n\n[0041]具体的，所述S40还包括：\n\n[0042]首先提供一MicroLED芯片41，在所述MicroLED芯片41上通过贵金属电极工艺制备第二金属电极42，所述第二金属电极42为Au、Ag、Au/AuSn、Au/AuTi中的任意一种。之后，将多个含有第二金属电极42的MicroLED芯片41通过转移基板转移至所述目标基板11对应的所述凹槽结构12上，使所述第二金属电极42与所述导电胶体30相接触，如图2D所示。\n\n[0043]S50，通过加热方式固化所述导电胶体30，实现所述Micro-LED芯片41与所述目标基板11可靠电性连接。\n\n[0044]具体的，所述S50还包括：\n\n[0045]首先对所述目标基板11进行直接加热或者通过红外线加热所述目标基板11，使得所述凹槽结构12内的所述导电胶体受热固化成导电材料层31，所述导电材料层31使得所述Micro-LED芯片41绑定在所述目标基板11上并与所述目标基板11进行可靠电性连接，如图2E所示。\n\n[0046]如图3所示，为本发明Micro-LED芯片的转移方法中目标基板的俯视图。优选的，多个所述凹槽结构12呈阵列状分布，每一所述凹槽结构12的底面形状为方形。\n\n[0047]如图4所示，为本发明Micro-LED芯片的转移方法中转移头的横截面示意图。\n\n[0048]优选的，多个所述吸头22为镂空结构，多个所述吸头22的底面为圆形。\n\n[0049]如图5所示，为本发明Micro-LED显示面板的结构示意图。包括目标基板51、第一金属电极53、导电材料层54、第二金属电极55以及Micro-LED芯片56，所述目标基板51表面具有多个凹槽结构52，所述第一金属电极53以及所述导电材料层54设置于所述凹槽结构52内，所述第二金属电极55设置于所述Micro-LED芯片56上并与所述导电材料层54相接触。\n\n[0050]优选的，多个所述凹槽结构52呈阵列状分布，每一所述凹槽结构52的底面形状为方形。\n\n[0051]优选的，多个第一金属电极53以及所述第二金属电极55为Au、Ag、Au/AuSn、Au/AuTi中的任意一种。\n\n[0052]优选的，所述导电材料层54为导电胶体经加热方式固化而成，所述加热方式包括对所述目标基板51进行直接加热或者通过红外线加热所述目标基板51，所述导电胶体为银溶胶、金溶胶、纳米银溶液/溶胶、纳米银线溶液/溶胶、石墨烯溶液/溶胶、异方性导电胶中的任意一种。\n\n[0053]为更简单的实现microLED与目标基板的bonding，简化工艺制程和节省成本和提高生产速率，本发明提供的Micro-LED芯片的转移方法及Micro-LED显示面板，实现了省去microLED上金属焊层工艺制程及与目标基板贵金属电极工艺制程的目的，节省了材料成本和工艺制程，提高了生产速率。\n\n[0054]本发明的有益效果为：本发明所提供的Micro-LED芯片的转移方法及Micro-LED显示面板，通过在目标基板上设置凹槽结构并采用转移头将导电胶体焊接材释放到凹槽结构内，节省了材料成本和工艺制程，进一步提高了生产速率。\n\n[0055]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种Micro-LED芯片的转移方法及Micro-LED显示面板。\n\n背景技术\n\n[0002]Micro-LED(微型无机发光二极管)芯片是将传统的LED(发光二极管)结构进行微小化和矩阵化，并采用CMOS(互补金属氧化物半导体)集成电路制成驱动电路，来实现每一个像素点定址控制和单独驱动的显示技术。Micro-LED芯片具有自发光、结构简单、体积小和节能的有点，已经被许多厂家视为下一代显示技术而开始积极布局。Micro-LED芯片通常为尺寸小于50um而厚度小于10um的薄片，故需要采用转移的方式把Micro-LED芯片转移到目标基板上。目前，为了实现Micro-LED芯片与目标基板的电性连接，通常会在Micro-LED芯片及目标基板上分别制作贵金属电极层，再在Micro-LED芯片上形成焊接层材料。然而，由于该制程需要在目标基板上制作贵金属层，且需要在Micro-LED芯片上再单独制作焊接层，制程复杂，且由于会采用蚀刻工艺，会浪费掉大量的贵金属材料和焊材，导致成本高昂。\n\n[0003]综上所述，现有的Micro-LED芯片的转移方法及Micro-LED显示面板，需要在目标基板上制作贵金属层且同时需要在Micro-LED芯片上单独制作焊接层，由于采用蚀刻工艺，导致大量的贵金属材料和焊材浪费，进一步导致成本高昂。\n\n发明内容\n\n[0004]本发明提供一种Micro-LED芯片的转移方法及Micro-LED显示面板，能够实现了省去Micro-LED芯片上金属焊层工艺制程及与目标基板贵金属电极工艺制程的目的，以解决现有的Micro-LED芯片转移的方法及Micro-LED显示面板，需要在目标基板上制作贵金属层且同时需要在Micro-LED芯片上单独制作焊接层，由于采用蚀刻工艺，导致大量的贵金属材料和焊材浪费，进一步导致成本高昂的技术问题。\n\n[0005]为解决上述问题，本发明提供的技术方案如下：\n\n[0006]本发明提供一种Micro-LED芯片的转移方法，所述方法包括：\n\n[0007]S10，提供一目标基板，所述目标基板的表面设置有多个凹槽结构，在每一所述凹槽结构内沉积一层金属膜层，形成第一金属电极；\n\n[0008]S20，提供一种转移头，所述转移头上设置有多个吸头，每一所述吸头的位置与每一所述凹槽结构的位置相对应，将所述转移头通过所述吸头吸取导电胶体；\n\n[0009]S30，将所述转移头上的每一所述吸头对准与其相对应的所述凹槽结构，释放所述转移头中的所述导电胶体，使所述导电胶体放置于所述凹槽结构内；\n\n[0010]S40，将多个含有第二金属电极的MicroLED芯片通过转移基板转移至所述目标基板对应的所述凹槽结构上，使所述第二金属电极与所述导电胶体相接触；\n\n[0011]S50，通过加热方式固化所述导电胶体，实现所述Micro-LED芯片与所述目标基板可靠电性连接。\n\n[0012]根据本发明一优选实施例，所述步骤S10中，多个所述凹槽结构呈阵列状分布，每一所述凹槽结构的底面形状为方形。\n\n[0013]根据本发明一优选实施例，所述步骤S10中，所述目标基板为印刷电路板、TFT基板以及CMOS基板中的任意一种。\n\n[0014]根据本发明一优选实施例，所述步骤S10与所述步骤S40中，所述第一金属电极以及所述第二金属电极为Au、Ag、Au/AuSn、Au/AuTi中的任意一种。\n\n[0015]根据本发明一优选实施例，所述步骤S20中，多个所述吸头为镂空结构，多个所述吸头的底面为圆形。\n\n[0016]根据本发明一优选实施例，所述步骤S20中，所述导电胶体为银溶胶、金溶胶、纳米银溶液/溶胶、纳米银线溶液/溶胶、石墨烯溶液/溶胶、异方性导电胶中的任意一种。\n\n[0017]根据本发明一优选实施例，所述步骤S50中，所述加热方式包括对所述目标基板进行直接加热或者通过红外线加热所述目标基板。\n\n[0018]本发明还提供一种Micro-LED显示面板，包括目标基板、第一金属电极、导电材料层、第二金属电极以及Micro-LED芯片，所述目标基板表面具有多个凹槽结构，所述第一金属电极以及所述导电材料层设置于所述凹槽结构内，所述第二金属电极设置于所述Micro-LED芯片上并与所述导电材料层相接触。\n\n[0019]根据本发明一优选实施例，多个所述凹槽结构呈阵列状分布，每一所述凹槽结构的底面形状为方形。\n\n[0020]根据本发明一优选实施例，所述第一金属电极以及所述第二金属电极为Au、Ag、Au/AuSn、Au/AuTi中的任意一种。\n\n[0021]本发明的有益效果为：本发明所提供的Micro-LED芯片的转移方法及Micro-LED显示面板，通过在目标基板上设置凹槽结构并采用转移头将导电胶体焊接材释放到凹槽结构内，节省了材料成本和工艺制程，进一步提高了生产速率。\n\n附图说明\n\n[0022]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0023]图1为本发明Micro-LED芯片的转移方法流程图。\n\n[0024]图2A-2E为图1所述Micro-LED芯片的转移方法的结构示意图。\n\n[0025]图3为本发明Micro-LED芯片的转移方法中目标基板的俯视图。\n\n[0026]图4为本发明Micro-LED芯片的转移方法中转移头的横截面示意图。\n\n[0027]图5为本发明Micro-LED显示面板的结构示意图。\n\n具体实施方式\n\n[0028]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0029]本发明针对现有的Micro-LED芯片的转移方法及Micro-LED显示面板，需要在目标基板上制作贵金属层且同时需要在Micro-LED芯片上单独制作焊接层，由于采用蚀刻工艺，导致大量的贵金属材料和焊材浪费，进一步导致成本高昂的技术问题，本实施例能够解决该缺陷。\n\n[0030]如图1所示，为本发明Micro-LED芯片的转移方法流程图。其中，所述方法包括：\n\n[0031]S10，提供一目标基板11，所述目标基板11的表面设置有多个凹槽结构12，在每一所述凹槽结构12内沉积一层金属膜层，形成第一金属电极13。\n\n[0032]具体的，所述S10还包括：\n\n[0033]首先，提供一目标基板11，所述目标基板11为印刷电路板、TFT基板以及CMOS(互补金属氧化物半导体)基板中的任意一种，所述目标基板11的表面设置有多个凹槽结构12，多个所述凹槽结构12的大小以及形状完全相同；之后，在每一所述凹槽结构12内沉积一层金属膜层，形成第一金属电极13，所述第一金属电极13为Au、Ag、Au/AuSn、Au/AuTi中的任意一种，如图2A所示。\n\n[0034]S20，提供一种转移头21，所述转移头21上设置有多个吸头22，每一所述吸头22的位置与每一所述凹槽结构12的位置相对应，将所述转移头21通过所述吸头22吸取导电胶体30。\n\n[0035]具体的，所述S20还包括：\n\n[0036]提供一种转移头21，所述转移头21上设置有多个吸头22，每一所述吸头22的位置与每一所述凹槽结构12的位置相对应，所述转移头21可以真空吸取焊料，多个所述吸头22为镂空结构，且所述吸头22可以把液态或流体状的导电材料吸入吸头22。之后，将所述转移头21通过所述吸头22吸取导电胶体30，所述导电胶体30为银溶胶、金溶胶、纳米银溶液/溶胶、纳米银线溶液/溶胶、石墨烯溶液/溶胶、异方性导电胶中的任意一种，如图2B所示。\n\n[0037]S30，将所述转移头21上的每一所述吸头22对准与其相对应的所述凹槽结构12，释放所述转移头21中的所述导电胶体30，使所述导电胶体30放置于所述凹槽结构12内。\n\n[0038]具体的，所述S30还包括：\n\n[0039]将所述转移头21上的每一所述吸头22对准与其相对应的所述凹槽结构12，释放所述转移头21中的所述导电胶体30，使所述导电胶体30正好放置于所述凹槽结构12内，所述导电胶体30位于所述第一金属电极13上并完全覆盖所述凹槽结构12，如图2C所示。\n\n[0040]S40，将多个含有第二金属电极42的MicroLED芯片41通过转移基板转移至所述目标基板11对应的所述凹槽结构12上，使所述第二金属电极42与所述导电胶体30相接触。\n\n[0041]具体的，所述S40还包括：\n\n[0042]首先提供一MicroLED芯片41，在所述MicroLED芯片41上通过贵金属电极工艺制备第二金属电极42，所述第二金属电极42为Au、Ag、Au/AuSn、Au/AuTi中的任意一种。之后，将多个含有第二金属电极42的MicroLED芯片41通过转移基板转移至所述目标基板11对应的所述凹槽结构12上，使所述第二金属电极42与所述导电胶体30相接触，如图2D所示。\n\n[0043]S50，通过加热方式固化所述导电胶体30，实现所述Micro-LED芯片41与所述目标基板11可靠电性连接。\n\n[0044]具体的，所述S50还包括：\n\n[0045]首先对所述目标基板11进行直接加热或者通过红外线加热所述目标基板11，使得所述凹槽结构12内的所述导电胶体受热固化成导电材料层31，所述导电材料层31使得所述Micro-LED芯片41绑定在所述目标基板11上并与所述目标基板11进行可靠电性连接，如图2E所示。\n\n[0046]如图3所示，为本发明Micro-LED芯片的转移方法中目标基板的俯视图。优选的，多个所述凹槽结构12呈阵列状分布，每一所述凹槽结构12的底面形状为方形。\n\n[0047]如图4所示，为本发明Micro-LED芯片的转移方法中转移头的横截面示意图。\n\n[0048]优选的，多个所述吸头22为镂空结构，多个所述吸头22的底面为圆形。\n\n[0049]如图5所示，为本发明Micro-LED显示面板的结构示意图。包括目标基板51、第一金属电极53、导电材料层54、第二金属电极55以及Micro-LED芯片56，所述目标基板51表面具有多个凹槽结构52，所述第一金属电极53以及所述导电材料层54设置于所述凹槽结构52内，所述第二金属电极55设置于所述Micro-LED芯片56上并与所述导电材料层54相接触。\n\n[0050]优选的，多个所述凹槽结构52呈阵列状分布，每一所述凹槽结构52的底面形状为方形。\n\n[0051]优选的，多个第一金属电极53以及所述第二金属电极55为Au、Ag、Au/AuSn、Au/AuTi中的任意一种。\n\n[0052]优选的，所述导电材料层54为导电胶体经加热方式固化而成，所述加热方式包括对所述目标基板51进行直接加热或者通过红外线加热所述目标基板51，所述导电胶体为银溶胶、金溶胶、纳米银溶液/溶胶、纳米银线溶液/溶胶、石墨烯溶液/溶胶、异方性导电胶中的任意一种。\n\n[0053]为更简单的实现microLED与目标基板的bonding，简化工艺制程和节省成本和提高生产速率，本发明提供的Micro-LED芯片的转移方法及Micro-LED显示面板，实现了省去microLED上金属焊层工艺制程及与目标基板贵金属电极工艺制程的目的，节省了材料成本和工艺制程，提高了生产速率。\n\n[0054]本发明的有益效果为：本发明所提供的Micro-LED芯片的转移方法及Micro-LED显示面板，通过在目标基板上设置凹槽结构并采用转移头将导电胶体焊接材释放到凹槽结构内，节省了材料成本和工艺制程，进一步提高了生产速率。\n\n[0055]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10671, 23725, '技术领域\n\n[0001]本发明涉及一种车载显示技术领域，尤指一种车载触摸显示装置。\n\n背景技术\n\n[0002]随着显示技术的发展，车载触摸显示模组的应用领域越来越广泛，其中对于模组防尘的要求也越来越高。现有车载触摸显示模组通常由触摸屏与液晶显示屏贴合后，再与背光源通过胶带或者胶水固定而组成。由于振动或环境等因素下，车载触摸显示模组在使用过程中，外界灰尘经常容易进入车载触摸显示模组中，造成显示质量下降，因而影响显示效果。\n\n发明内容\n\n[0003]本发明的目的，在于提供一种车载触摸显示装置，避免灰尘或微粒进入所述车载触摸显示模组内，从而提升显示效果。\n\n[0004]为达到本发明前述目的，本发明提供一种车载触摸显示装置，其特征在于，包括背光模组、触摸显示模组及封框胶。所述触摸显示模组设置在所述背光模组上方，所述触摸显示模组包括依次叠设的触摸屏、上偏光膜、液晶层及下偏光膜。所述封框胶结合所述背光模组和所述触摸显示模组。所述封框胶具有凸出于所述背光模组和所述触摸显示模组之间的突出部。所述突出部朝向所述下偏光膜的一侧面上还设置有黏贴胶层。\n\n[0005]优选地，所述黏贴胶层还包括聚氨酯和黏贴在所述聚氨酯二侧表面的双面胶。\n\n[0006]优选地，其一所述双面胶与所述突出部的所述侧面黏合，另一所述双面胶则未与所述下偏光膜接触。\n\n[0007]优选地，所述聚氨酯的厚度大于各所述双面胶的厚度。\n\n[0008]优选地，还包括空气间隙层，所述空气间隙层位于所述黏贴胶层和所述下偏光膜之间，所述空气间隙层的厚度介于0.1至0.2毫米。\n\n[0009]优选地，还包括形成在所述基板上的无机线路层，所述封框胶还包括出光开口，所述出光开口形成在所述二突出部之间。\n\n[0010]优选地，所述触摸屏的尺寸大于所述封框胶的尺寸，且所述触摸屏的两端突出于所述封框胶之外。\n\n[0011]优选地，所述触摸显示模组还包括设置在所述触摸屏和所述上偏光膜的黏着层，所述黏着层为胶带或胶水。\n\n[0012]优选地，所述背光模组还包括多个光学膜片、固定各所述光学膜片的金属框架和至少一光源，所述金属框架结合在所述封框胶上。\n\n[0013]优选地，所述至少一光源为发光二极管或为多个次毫米发光二极管或为多个冷阴极荧光灯管，各所述光学膜片包括导光板、棱镜层、扩散层与反射层。\n\n[0014]本发明还具有以下功效，本发明通过黏贴胶层的黏附能力，降低异物进入车载触摸显示装置内的风险，提升显示品质、防尘能力和其市场竞争力。再者，位于所述黏贴胶层和所述下偏光膜之间的空气间隙层，能够避免液晶层直接黏附于黏贴胶层上受到背光模组形变的影响而导致显示不均(光学不良)的问题，从而提高产品抗形变能力与市场竞争力。\n\n附图说明\n\n[0015]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0016]图1是本发明车载触摸显示装置的横截面示意图；及\n\n[0017]图2是图1中A区域的放大示意图。\n\n具体实施方式\n\n[0018]在具体实施方式中提及“实施例”意指结合实施例描述的特定特征、结构或特性可以包含在本发明的至少一个实施例中。在说明书中的不同位置出现的相同用语并非必然被限制为相同的实施方式，而应当理解为与其它实施例互为独立的或备选的实施方式。在本发明提供的实施例所公开的技术方案启示下，本领域的普通技术人员应理解本发明所描述的实施例可具有其他符合本发明构思的技术方案结合或变化。\n\n[0019]请一并参照图1及图2所示，图1为本发明车载触摸显示装置的横截面示意图；图2为图1中A区域的放大示意图。在如图1及图2所示的实施例中，本发明提供一种车载触摸显示装置1包括背光模组(Backlight Module)11、触摸显示模组12及封框胶13。背光模块11用以提供充足的亮度与均匀的光线，使触摸显示模组12内的液晶层123能够正常的显示影像。车载触摸显示装置1的具体结构容下所述。\n\n[0020]所述触摸显示模组12设置在所述背光模组11上方，所述触摸显示模组12包括依次叠设的触摸屏121、上偏光膜122、液晶层123及下偏光膜124。所述封框胶13结合所述背光模组11和所述触摸显示模组12。所述封框胶13具有凸出于所述背光模组11和所述触摸显示模组12之间的突出部131。所述突出部131朝向所述下偏光膜124的一侧面(未标示)上还设置有黏贴胶层15。\n\n[0021]如图2所示，所述触摸显示模组12还包括设置在所述触摸屏121和所述上偏光膜122的黏着层126。所述黏着层126例如为胶带、胶水或其他适合的黏着剂，以强化触摸屏121的结合能力。\n\n[0022]所述背光模组11还包括多个光学膜片111(Optical Film)、固定各所述光学膜片111的金属框架112和至少一光源(图略)。所述金属框架112结合在所述封框胶13(即突出部131的另一侧面)上。由于液晶层123不发光，通过背光模组11的光源提供光线。本实施例的所述至少一光源优选为发光二极管(LED)。在另一次选的实施例中，光源也可为多个次毫米发光二极管(mini-LED)或为多个冷阴极荧光灯管(CCFL；Cold Cathode FluorescentLamp)，视需要而改变。通过各所述光学膜片111例如包括导光板、棱镜层、扩散层与反射层等将点或线光源，以将光源转换成均匀的面光源。\n\n[0023]在如图2所示的实施例中，所述黏贴胶层15还包括聚氨酯151(PU，ploy urethane；又称泡棉)和黏贴在所述聚氨酯151二侧表面的双面胶152。图2中仅绘示单一的双面胶152表示。其一所述双面胶152与所述突出部131的所述侧面黏合，另一所述双面胶152则未与所述下偏光膜124接触。所述聚氨酯151的厚度大于各所述双面胶152的厚度。\n\n[0024]由于汽车在行驶过程中会出现剧烈震动，利用聚氨酯151以及塑性材质制成的突出部131所具备的缓冲作用，能够避免液晶层123或触摸屏121与背光模组11之间出现刚性碰撞，实现防震、吸震与保护的效果。此外，当异物，例如灰尘、微粒等因振动等因素进入触摸显示模组12内时，所述黏贴胶层15的双面胶152会在一定程度的将异物黏附住，进而防止异物进入触摸显示模组12内，从而提升显示品质、防尘能力和其市场竞争力。\n\n[0025]如图2所示的实施例中还包括空气间隙层125，所述空气间隙层125位于所述黏贴胶层15和所述下偏光膜124之间。所述空气间隙层125的厚度介于0.1至0.2毫米。所述空气间隙层125具有防止车辆在震动时触摸显示模组12被双面胶152黏附，达到减少液晶层123因背光模组11形变导致局部受力效果，同时能够避免液晶层123受到背光模组11的形变而黏附于黏贴胶层15上，影响黏贴胶层15的黏尘能力，达到避免显示效果不佳或不均的不良现象，从而提高产品抗形变能力与市场竞争力。\n\n[0026]再者，所述触摸屏121的尺寸大于所述封框胶13的尺寸，且所述触摸屏121的两端突出于所述封框胶13之外，也能够进一步避免灰尘、微粒或其他异物从触摸屏121与封框胶13间的缝隙进入车载触摸显示装置1内。所述封框胶13还包括出光开口132，所述出光开口132形成在所述二突出部131之间，以利背光模组11的光线通过所述出光开口132，并提供所述液晶层123充足的亮度与分布均匀的光源。\n\n[0027]综上所述，虽然本发明结合其具体实施例而被描述，应该理解的是，许多替代、修改及变化对于那些本领域的技术人员将是显而易见的。因此，其意在包含落入所附权利要求书的范围内的所有替代、修改及变化。', '技术领域\n\n[0001]本发明涉及一种车载显示技术领域，尤指一种车载触摸显示装置。\n\n背景技术\n\n[0002]随着显示技术的发展，车载触摸显示模组的应用领域越来越广泛，其中对于模组防尘的要求也越来越高。现有车载触摸显示模组通常由触摸屏与液晶显示屏贴合后，再与背光源通过胶带或者胶水固定而组成。由于振动或环境等因素下，车载触摸显示模组在使用过程中，外界灰尘经常容易进入车载触摸显示模组中，造成显示质量下降，因而影响显示效果。\n\n发明内容\n\n[0003]本发明的目的，在于提供一种车载触摸显示装置，避免灰尘或微粒进入所述车载触摸显示模组内，从而提升显示效果。\n\n[0004]为达到本发明前述目的，本发明提供一种车载触摸显示装置，其特征在于，包括背光模组、触摸显示模组及封框胶。所述触摸显示模组设置在所述背光模组上方，所述触摸显示模组包括依次叠设的触摸屏、上偏光膜、液晶层及下偏光膜。所述封框胶结合所述背光模组和所述触摸显示模组。所述封框胶具有凸出于所述背光模组和所述触摸显示模组之间的突出部。所述突出部朝向所述下偏光膜的一侧面上还设置有黏贴胶层。\n\n[0005]优选地，所述黏贴胶层还包括聚氨酯和黏贴在所述聚氨酯二侧表面的双面胶。\n\n[0006]优选地，其一所述双面胶与所述突出部的所述侧面黏合，另一所述双面胶则未与所述下偏光膜接触。\n\n[0007]优选地，所述聚氨酯的厚度大于各所述双面胶的厚度。\n\n[0008]优选地，还包括空气间隙层，所述空气间隙层位于所述黏贴胶层和所述下偏光膜之间，所述空气间隙层的厚度介于0.1至0.2毫米。\n\n[0009]优选地，还包括形成在所述基板上的无机线路层，所述封框胶还包括出光开口，所述出光开口形成在所述二突出部之间。\n\n[0010]优选地，所述触摸屏的尺寸大于所述封框胶的尺寸，且所述触摸屏的两端突出于所述封框胶之外。\n\n[0011]优选地，所述触摸显示模组还包括设置在所述触摸屏和所述上偏光膜的黏着层，所述黏着层为胶带或胶水。\n\n[0012]优选地，所述背光模组还包括多个光学膜片、固定各所述光学膜片的金属框架和至少一光源，所述金属框架结合在所述封框胶上。\n\n[0013]优选地，所述至少一光源为发光二极管或为多个次毫米发光二极管或为多个冷阴极荧光灯管，各所述光学膜片包括导光板、棱镜层、扩散层与反射层。\n\n[0014]本发明还具有以下功效，本发明通过黏贴胶层的黏附能力，降低异物进入车载触摸显示装置内的风险，提升显示品质、防尘能力和其市场竞争力。再者，位于所述黏贴胶层和所述下偏光膜之间的空气间隙层，能够避免液晶层直接黏附于黏贴胶层上受到背光模组形变的影响而导致显示不均(光学不良)的问题，从而提高产品抗形变能力与市场竞争力。\n\n附图说明\n\n[0015]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0016]图1是本发明车载触摸显示装置的横截面示意图；及\n\n[0017]图2是图1中A区域的放大示意图。\n\n具体实施方式\n\n[0018]在具体实施方式中提及“实施例”意指结合实施例描述的特定特征、结构或特性可以包含在本发明的至少一个实施例中。在说明书中的不同位置出现的相同用语并非必然被限制为相同的实施方式，而应当理解为与其它实施例互为独立的或备选的实施方式。在本发明提供的实施例所公开的技术方案启示下，本领域的普通技术人员应理解本发明所描述的实施例可具有其他符合本发明构思的技术方案结合或变化。\n\n[0019]请一并参照图1及图2所示，图1为本发明车载触摸显示装置的横截面示意图；图2为图1中A区域的放大示意图。在如图1及图2所示的实施例中，本发明提供一种车载触摸显示装置1包括背光模组(Backlight Module)11、触摸显示模组12及封框胶13。背光模块11用以提供充足的亮度与均匀的光线，使触摸显示模组12内的液晶层123能够正常的显示影像。车载触摸显示装置1的具体结构容下所述。\n\n[0020]所述触摸显示模组12设置在所述背光模组11上方，所述触摸显示模组12包括依次叠设的触摸屏121、上偏光膜122、液晶层123及下偏光膜124。所述封框胶13结合所述背光模组11和所述触摸显示模组12。所述封框胶13具有凸出于所述背光模组11和所述触摸显示模组12之间的突出部131。所述突出部131朝向所述下偏光膜124的一侧面(未标示)上还设置有黏贴胶层15。\n\n[0021]如图2所示，所述触摸显示模组12还包括设置在所述触摸屏121和所述上偏光膜122的黏着层126。所述黏着层126例如为胶带、胶水或其他适合的黏着剂，以强化触摸屏121的结合能力。\n\n[0022]所述背光模组11还包括多个光学膜片111(Optical Film)、固定各所述光学膜片111的金属框架112和至少一光源(图略)。所述金属框架112结合在所述封框胶13(即突出部131的另一侧面)上。由于液晶层123不发光，通过背光模组11的光源提供光线。本实施例的所述至少一光源优选为发光二极管(LED)。在另一次选的实施例中，光源也可为多个次毫米发光二极管(mini-LED)或为多个冷阴极荧光灯管(CCFL；Cold Cathode FluorescentLamp)，视需要而改变。通过各所述光学膜片111例如包括导光板、棱镜层、扩散层与反射层等将点或线光源，以将光源转换成均匀的面光源。\n\n[0023]在如图2所示的实施例中，所述黏贴胶层15还包括聚氨酯151(PU，ploy urethane；又称泡棉)和黏贴在所述聚氨酯151二侧表面的双面胶152。图2中仅绘示单一的双面胶152表示。其一所述双面胶152与所述突出部131的所述侧面黏合，另一所述双面胶152则未与所述下偏光膜124接触。所述聚氨酯151的厚度大于各所述双面胶152的厚度。\n\n[0024]由于汽车在行驶过程中会出现剧烈震动，利用聚氨酯151以及塑性材质制成的突出部131所具备的缓冲作用，能够避免液晶层123或触摸屏121与背光模组11之间出现刚性碰撞，实现防震、吸震与保护的效果。此外，当异物，例如灰尘、微粒等因振动等因素进入触摸显示模组12内时，所述黏贴胶层15的双面胶152会在一定程度的将异物黏附住，进而防止异物进入触摸显示模组12内，从而提升显示品质、防尘能力和其市场竞争力。\n\n[0025]如图2所示的实施例中还包括空气间隙层125，所述空气间隙层125位于所述黏贴胶层15和所述下偏光膜124之间。所述空气间隙层125的厚度介于0.1至0.2毫米。所述空气间隙层125具有防止车辆在震动时触摸显示模组12被双面胶152黏附，达到减少液晶层123因背光模组11形变导致局部受力效果，同时能够避免液晶层123受到背光模组11的形变而黏附于黏贴胶层15上，影响黏贴胶层15的黏尘能力，达到避免显示效果不佳或不均的不良现象，从而提高产品抗形变能力与市场竞争力。\n\n[0026]再者，所述触摸屏121的尺寸大于所述封框胶13的尺寸，且所述触摸屏121的两端突出于所述封框胶13之外，也能够进一步避免灰尘、微粒或其他异物从触摸屏121与封框胶13间的缝隙进入车载触摸显示装置1内。所述封框胶13还包括出光开口132，所述出光开口132形成在所述二突出部131之间，以利背光模组11的光线通过所述出光开口132，并提供所述液晶层123充足的亮度与分布均匀的光源。\n\n[0027]综上所述，虽然本发明结合其具体实施例而被描述，应该理解的是，许多替代、修改及变化对于那些本领域的技术人员将是显而易见的。因此，其意在包含落入所附权利要求书的范围内的所有替代、修改及变化。');
INSERT INTO `os_patent_instruction_text` VALUES (10672, 23726, '技术领域\n\n[0001]本发明涉及显示领域，尤其涉及一种micro LED芯片及其制备方法。\n\n背景技术\n\n[0002]微型发光二极管(Micro-LED)由于具有更高的亮度、更好的发光效、以及更低的功耗，成为新一代显示技术发展的重点。\n\n[0003]然而，由于显示时，驱动薄膜晶体管(TFT)主要工作在饱和区，TFT源漏极两端跨压大，而Micro LED的跨压低，这就使得驱动TFT上消耗了大部分功耗，导致了功耗增加，驱动效率低。\n\n[0004]因此，现有Micro LED显示器存在驱动TFT功耗严重的问题，需要解决。\n\n发明内容\n\n[0005]本发明提供一种Micro-LED芯片及其制备方法，以缓解现有Micro LED显示器存在驱动TFT功耗严重的问题。\n\n[0006]为解决以上问题，本发明提供的技术方案如下：\n\n[0007]本发明提供一种Micro-LED芯片，包括：\n\n[0008]层叠设置的缓冲层、第一半导体层、有源层、第二半导体层、绝缘层、电流扩散层、保护层、以及第一电极和第二电极；\n\n[0009]其中，所述绝缘层将所述第一半导体层、所述有源层和所述第二半导体层分隔为至少两个子芯片，且每一所述子芯片内的第二半导体层，通过所述电流扩散层与下一所述子芯片内的第一半导体层连接，所述第一电极电连接第一所述子芯片的第一半导体层，所述第二电极电连接最末所述子芯片的第二半导体层。\n\n[0010]在本发明提供的Micro-LED芯片中，所述电流扩散层覆盖上一所述子芯片的第二半导体层，且通过所述绝缘层上的过孔与下一所述子芯片的第一半导体层连接。\n\n[0011]在本发明提供的Micro-LED芯片中，所述电流扩散层与上一所述子芯片的第二半导体层部分接触，且通过所述绝缘层上的过孔与下一所述子芯片的第一半导体层连接。\n\n[0012]在本发明提供的Micro-LED芯片中，所述第一电极通过所述电流扩散层与所述第一子芯片的第一半导体层电连接。\n\n[0013]在本发明提供的Micro-LED芯片中，所述第一电极直接与所述第一子芯片的第一半导体层电连接。\n\n[0014]在本发明提供的Micro-LED芯片中，所述第二电极通过所述电流扩散层与所述最末子芯片的第二半导体层电连接。\n\n[0015]在本发明提供的Micro-LED芯片中，所述第二电极直接与所述最末子芯片的第二半导体层电连接。\n\n[0016]在本发明提供的Micro-LED芯片中，所述第一半导体层为N型氮化镓层，所述有源层为氮化镓多量子阱层，所述第二半导体层为P型氮化镓层，所述第一电极为N型电极，所述第二电极为P型电极。\n\n[0017]在本发明提供的Micro-LED芯片中，所述电流扩散层的材料为氧化锡或石墨烯。\n\n[0018]同时，本发明提供一种Micro-LED芯片的制备方法，包括：\n\n[0019]提供衬底基板，并在所述衬底基板上依次制备缓冲层、N型氮化镓层、氮化镓多量子阱层和P型氮化镓层；\n\n[0020]对所述P型氮化镓层和氮化镓多量子阱层的预定区域进行刻蚀，形成第一过孔，并露出N型氮化镓层；\n\n[0021]对露出的所述N型氮化镓层的预定区域进行刻蚀，形成第二过孔，并露出缓冲层；\n\n[0022]在所述P型氮化镓层、所述N型氮化镓层、以及所述缓冲层上制备绝缘层；\n\n[0023]刻蚀掉所述N型氮化镓层和部分所述P型氮化镓层上的绝缘层；\n\n[0024]在所述P型半导体层、所述N型半导体层、以及所述绝缘层上制备电流扩散层；\n\n[0025]刻蚀掉所述第一过孔第一侧边绝缘层上的电流扩散层，露出绝缘层，所述第一侧边为靠近最末子芯片方向的一侧；\n\n[0026]在所述电流扩散层和所述绝缘层上制备保护层；\n\n[0027]刻蚀掉所述最末子芯片电流扩散层上的保护层，以及第一子芯片远离所述最末子芯片侧的第一过孔和第二过孔内的保护层，露出电流扩散层；\n\n[0028]在所述最末子芯片的电流扩散层上制备P型电极，在所述第一子芯片远离所述最末子芯片侧的第一过孔和第二过孔内制备N型电极；\n\n[0029]粘合临时基板；\n\n[0030]剥离所述衬底基板。\n\n[0031]本发明的有益效果为：本发明提供一种Micro-LED芯片及其制备方法，其Micro-LED芯片包括层叠设置的缓冲层、第一半导体层、有源层、第二半导体层、绝缘层、电流扩散层、保护层、以及第一电极和第二电极；其中，绝缘层将第一半导体层、有源层和第二半导体层分隔为至少两个子芯片，且每一子芯片内的第二半导体层，通过电流扩散层与下一子芯片内的第一半导体层连接，第一电极电连接第一子芯片的第一半导体层，第二电极电连接最末子芯片的第二半导体层。通过绝缘层实现了子芯片的分隔，通过电流扩散层实现了子芯片的串联，从而增大了Micro LED的跨压，降低了驱动TFT上的功耗，缓解了现有MicroLED显示器存在驱动TFT功耗严重的问题。\n\n附图说明\n\n[0032]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0033]图1为本发明实施例提供的micro-LED芯片的结构示意图。\n\n[0034]图2为本发明实施例提供的micro-LED芯片的制备流程图。\n\n[0035]图3为本发明实施例提供的micro-LED像素驱动电路示意图。\n\n具体实施方式\n\n[0036]下面将结合本发明的具体实施方案，对本发明实施方案和/或实施例中的技术方案进行清楚、完整的描述，显而易见的，下面所描述的实施方案和/或实施例仅仅是本发明一部分实施方案和/或实施例，而不是全部的实施方案和/或实施例。基于本发明中的实施方案和/或实施例，本领域普通技术人员在没有做出创造性劳动前下所获得的所有其他实施方案和/或实施例，都属于本发明保护范围。\n\n[0037]本发明所提到的方向用语，例如[上]、[下]、[左]、[右]、[前]、[后]、[内]、[外]、[侧]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明和理解本发明，而非用以限制本发明。术语“第一”、“第二”等仅用于描述目的，而不能理解为指示或是暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”等的特征可以明示或者隐含地包括一个或者更多个该特征。\n\n[0038]针对现有Micro LED显示器存在驱动TFT功耗严重的问题，本发明提供一种Micro-LED芯片可以缓解这个问题。\n\n[0039]在一种实施例中，如图1所示，本发明提供的Micro-LED芯片10包括由上到下依次层叠设置的：\n\n[0040]缓冲层101，在一种实施例中，缓冲层101为较厚的氮化镓本征层，其厚度大于2um，该实施例仅为示例性说明，并非限定。\n\n[0041]第一半导体层102、有源层103和第二半导体层104，在一种实施例中，第一半导体层102为N型氮化镓层，有源层103为氮化镓多量子阱层，第二半导体层104为P型氮化镓层，P型氮化镓层可为镁(Mg)掺杂的氮化镓层，N型氮化镓层可为硅(Si)掺杂的氮化镓层，氮化镓量子阱层可为依次重复排列的氮化铟镓/氮化镓(InGaN/GaN)层，该实施例仅为示例性说明，并非限定，在其他实施例中，第一半导体层102、有源层103和第二半导体层104的材料可根据Micro-LED芯片的实际需求设置。\n\n[0042]绝缘层105，用于将第一半导体层102、有源层103和第二半导体层104分隔为至少两个独立的子芯片；在一种实施例中，绝缘层105的材料为氧化硅、氮化硅、氮氧化硅、氮化铝、涂布玻璃、聚酰亚胺中的一种或几种，优选透光性能良好的氧化硅。\n\n[0043]电流扩散层106，用于将每一子芯片内的第二半导体层104，与下一子芯片内的第一半导体层102连接，形成欧姆接触，使P型半导体层中产生的空穴和/或N型半导体层中产生的电子能有效地注入有源层中，从而增加Micro-LED显示面板的发光效率。同时，电流扩散层106还起到反射光的作用。在一种实施例中，电流扩散层106的材料为石墨烯、氧化铟锡、氧化锌、镍、银、铝、金、铂、钯、镁、钨等导电性和反射性能都较好的材料，电流扩散层106可以是单层结构，也可以是多层结构。\n\n[0044]保护层107，用于覆盖和隔绝电流扩散层106，同时隔绝水氧和导热，减缓Micro-LED芯片10中各膜层性能的衰减，从而延长Micro-LED芯片的使用寿命。在一中实施例中，保护层107的材料为氧化硅、氮化硅、氮氧化硅、氮化铝中的任一种，优选导热性良好的氮化硅、氮氧化硅、氮化铝等材料。\n\n[0045]第一电极108和第二电极109，第一电极108电连接第一子芯片的第一半导体层102，第二电极109电连接最末子芯片的第二半导体层104。正在一种实施例中，第一电极108为N型电极，第二电极109为P型电极，其材料为铟、锡、锌、镍、银、铝、金、铂、钯、镁、钨等金属或合金中的一种或几种，可以采用单层金属结构，也可以采用多层金属结构。\n\n[0046]在每一子芯片内，N型半导体层102、有源层103和P型半导体层104构成发光PN结，当将所述发光PN结连接到外电路中，实现通过外电路给发光PN结施加电压时，N型半导体层102和P型半导体层104内分别产生电子和空穴，产生的电子和空穴均注入到有源层103内，并在有源层103内复合发出光子，实现Micro-LED的电致发光。\n\n[0047]第一子芯片的N型半导体层102与N型电极108电连接，第一子芯片的P型半导体层104与第二子芯片的N型半导体层通过电流扩散层106电连接，第二子芯片的P型半导体层104与第三子芯片的N型半导体层通过电流扩散层106电连接，依次向后，最末子芯片的P型半导体层104与P型电极109电连接，实现了各个子芯片的串联。当通过N型电极和P型电极连接外电路并对本实施例提供的Micro-LED芯片施加外电压时，各子芯片将各自获得一份工作电压，并同时通过电致发光效应发光显示，如此，整个Micro-LED芯片将需要单个子芯片相应倍数的工作电压，从而增加了整个Micro-LED芯片的压降。\n\n[0048]本发明实施例提供了一种Micro-LED芯片，其通过绝缘层将Micro-LED芯片分隔为若干个相互独立的子芯片，并通过电流扩散层将上一子芯片内的第二半导体层与下一子芯片内的第一半导体层连接，实现了各子芯片之间的串联，从而增大了Micro LED的跨压，降低了驱动TFT上的功耗，缓解了现有Micro LED显示器存在驱动TFT功耗严重的问题。\n\n[0049]图1所示的实施例仅展示出了本发明提供的Micro LED芯片的一种膜层结构，并非对本发明提供的Micro LED芯片膜层结构做限定，在其他实施例中，可根据Micro LED芯片的需求进行膜层结构设计。\n\n[0050]在一种实施例中，电流扩散层106与上一子芯片第二半导体层104的连接方式为覆盖上一子芯片第二半导体层104的台面，然后通过绝缘层105上的过孔与下一子芯片的第一半导体层102连接。\n\n[0051]在另一种实施例中，如图1所示，电流扩散层106与上一子芯片第二半导体层104的连接方式为与上一子芯片第二半导体层104的台面部分接触，然后通过绝缘层105上的过孔与下一子芯片的第一半导体层102连接。\n\n[0052]在一种实施例中，第一电极108通过电流扩散层106与第一子芯片的第一半导体层102电连接，即第一电极108与第一子芯片第一半导体层102接触的台面上任然保留有电流扩散层106。\n\n[0053]在另一种实施例中，如图1所示，第一电极108直接与第一子芯片的第一半导体层102电连接。\n\n[0054]在一种实施例中，如图1所示，第二电极109通过电流扩散层106与最末子芯片的第二半导体层104电连接。\n\n[0055]在另一种实施例中，第二电极109直接与最末子芯片的第二半导体层104电连接，即第二电极109与最末子芯片第二半导体层104接触的位置未设置电流扩散层106。\n\n[0056]同时，如图2所示，本发明实施例还提供一种micro-LED芯片的制备方法，包括：\n\n[0057]S1、提供衬底基板，并在衬底基板上依次制备缓冲层、N型氮化镓层、氮化镓多量子阱层和P型氮化镓层。\n\n[0058]在一种实施例中，衬底基板为蓝宝石衬底，蓝宝石衬底基板具有生产技术成熟、稳定性很好、机械强度高、易于处理和清洗、以及可重复利用等优点。衬底基板还可以为碳化硅(SiC)衬底、硅(Si)衬底或者其它可用的衬底材料，本发明实施例对此不做限定。\n\n[0059]在一种实施例中，通过MOCVD外延技术在清洗过后的衬底基板上依次生长缓冲层、N型氮化镓层、氮化镓多量子阱层和P型氮化镓层，其中缓冲层为较厚的氮化镓层，厚度大于2um。在P型氮化镓层生长完之后，需对芯片进行先进行酸洗，用王水冲温腐蚀30分钟，清洗去除芯片表面的金属污染物；然后通过浓硫酸常温清洗5分钟，去除表面有机物污染；再用氟化氢进行晶圆表面去氧化层处理，最后用去离子水冲洗甩干。\n\n[0060]S2、对P型氮化镓层和氮化镓多量子阱层的预定区域进行刻蚀，形成第一过孔，并露出N型氮化镓层。\n\n[0061]根据micro-LED芯片预设子芯片数量以及各子芯片的尺寸，确定预定刻蚀区域，利用光刻胶作为掩膜，ICP等离子体干法蚀刻，去除预定区域内的P型氮化镓层和氮化镓多量子阱层，刻蚀区域形成第一过孔，通过第一过孔露出N型氮化镓层。\n\n[0062]在该步骤中，对露出的N型氮化镓层的预定区域的刻蚀还可以采用其他的方法手段，不限于ICP等离子体干法蚀刻。\n\n[0063]S3、对露出的N型氮化镓层的预定区域进行刻蚀，形成第二过孔，并露出缓冲层。\n\n[0064]以光刻胶作为掩膜，ICP等离子体干法蚀刻，对第一过孔内N型氮化镓层的预定区域进行刻蚀，去除预定区域内的N型氮化镓层，露出位于其下的缓冲层，刻蚀区域形成第二过孔，同时第一过孔内的N型氮化镓层形成N型氮化镓层台面，台面面积在满足N型氮化镓层的欧姆接触要求时尽可能小。\n\n[0065]在该步骤中，对露出的N型氮化镓层的预定区域的刻蚀还可以采用其他的方法手段，如湿法腐蚀等，不限于ICP等离子体干法蚀刻。\n\n[0066]S4、在P型氮化镓层、N型氮化镓层、以及缓冲层上制备绝缘层。\n\n[0067]采用等离子增强型化学气相沉积(PECVD)等技术，在芯片上覆盖一层绝缘薄膜层，绝缘层薄膜覆盖P型氮化镓层，并通过过孔遮盖N型氮化镓层和以及缓冲层。绝缘层105的材料为氧化硅、氮化硅、氮氧化硅、氮化铝、涂布玻璃、聚酰亚胺中的一种或几种，优选透光性能良好的氧化硅。\n\n[0068]S5、刻蚀掉N型氮化镓层和部分P型氮化镓层上的绝缘层。\n\n[0069]利用刻蚀技术去除N型氮化镓层上的绝缘层，露出N型氮化镓层的台面，去除部分P型氮化镓层上的绝缘层，露出部分P型氮化镓层上的绝缘层。\n\n[0070]S6、在P型半导体层、N型半导体层、以及绝缘层上制备电流扩散层。\n\n[0071]采用磁控溅射或热蒸发等技术，在芯片上沉积一层电流扩散层，覆盖外露的P型半导体层、N型半导体层、以及绝缘层。电流扩散层106的材料为石墨烯、氧化铟锡、氧化锌、镍、银、铝、金、铂、钯、镁、钨等导电性和反射性能都较好的材料，电流扩散层106可以是单层结构，也可以是多层结构。\n\n[0072]S7、刻蚀掉第一过孔第一侧边绝缘层上的电流扩散层，露出绝缘层，所述第一侧边为靠近最末子芯片方向的一侧。\n\n[0073]采用刻蚀技术去除第一过孔第一侧边绝缘层上的电流扩散层，使得同一子芯片内的P型半导体层和N型半导体层形成断路。\n\n[0074]S8、在电流扩散层和绝缘层上制备保护层。\n\n[0075]在芯片上的再覆盖一层的绝缘材料层作为保护层，具体地，绝缘材料层采用氧化硅、氮化硅、氮氧化硅、氮化铝中的任一种制成，优选导热性良好的氮化硅、氮氧化硅、氮化铝等材料。\n\n[0076]S9、刻蚀掉最末子芯片电流扩散层上的保护层，以及第一子芯片远离最末子芯片侧的第一过孔和第二过孔内的保护层，露出电流扩散层。\n\n[0077]采用刻蚀技术去除最末子芯片电流扩散层上的保护层，以及第一子芯片远离最末子芯片侧的第一过孔和第二过孔内的保护层，使得第一子芯片的N型半导体层或与N型半导体层连接的电流传输层露出来，最末子芯片P型半导体层或者与P型半导体层连接的电流传输层露出来，以备电极制作。\n\n[0078]S10、在最末子芯片的电流扩散层上制备P型电极，在第一子芯片远离最末子芯片侧的第一过孔和第二过孔内制备N型电极。\n\n[0079]在外露的第一子芯片的N型半导体层上，或外露的与N型半导体层上连接的电流传输层上制备N型电极，与第一子芯片的N型半导体层形成欧姆接触；在最末子芯片的P型半导体层上，或与P型半导体层连接的电流传输层上制备P型电极，与最末子芯片的P型半导体形成欧姆接触。N型电极和P型电极的材料为铟、锡、锌、镍、银、铝、金、铂、钯、镁、钨等金属或合金中的一种或几种，\n\n[0080]S11、粘合临时基板。\n\n[0081]S12、剥离衬底基板。剥离的衬底基板可重复利用。\n\n[0082]本发明实施例提供了一种Micro-LED芯片的制备方法，通过刻蚀技术将Micro-LED芯片分隔为若干个彼此独立的子芯片，并通过绝缘层将子芯片隔离开来，再通过电流扩散层将上一子芯片内的第二半导体层与下一子芯片内的第一半导体层连接，实现了各子芯片之间的串联，从而增大了Micro LED的跨压，降低了驱动TFT上的功耗，缓解了现有MicroLED显示器存在驱动TFT功耗严重的问题。\n\n[0083]本发明实施例还提供一种Micro-LED显示面板，其包括如图1所示的Micro-LED芯片，Micro-LED芯片包括上到下依次层叠设置的缓冲层、第一半导体层、有源层和第二半导体层、绝缘层、电流扩散层、保护层、以及第一电极和第二电极；\n\n[0084]其中，绝缘层将第一半导体层、有源层和第二半导体层分隔为至少两个子芯片，且每一子芯片内的第二半导体层，通过电流扩散层与下一子芯片内的第一半导体层连接，第一电极电连接第一子芯片的第一半导体层，第二电极电连接最末子芯片的第二半导体层。\n\n[0085]本发明实施例提供了一种Micro-LED显示面板，该Micro-LED显示面板包括Micro-LED芯片，所述Micro-LED芯片通过绝缘层将自身分隔为若干个相互独立的子芯片，并通过电流扩散层将上一子芯片内的第二半导体层与下一子芯片内的第一半导体层连接，实现了各子芯片之间的串联，从而增大了Micro LED的跨压，降低了驱动TFT上的功耗，缓解了现有Micro LED显示器存在驱动TFT功耗严重的问题。\n\n[0086]在一种实施例中，电流扩散层覆盖上一子芯片的第二半导体层，且通过绝缘层上的过孔与下一子芯片的第一半导体层连接。\n\n[0087]在一种实施例中，电流扩散层与上一子芯片的第二半导体层部分接触，且通过绝缘层上的过孔与下一子芯片的第一半导体层连接。\n\n[0088]在一种实施例中，第一电极通过电流扩散层与第一子芯片的第一半导体层电连接。\n\n[0089]在一种实施例中，第一电极直接与第一子芯片的第一半导体层电连接。\n\n[0090]在一种实施例中，第二电极通过电流扩散层与最末子芯片的第二半导体层电连接。\n\n[0091]在一种实施例中，第二电极直接与最末子芯片的第二半导体层电连接。\n\n[0092]在一种实施例中，第一半导体层为N型氮化镓层，有源层为氮化镓多量子阱层，第二半导体层为P型氮化镓层，第一电极为N型电极，第二电极为P型电极。\n\n[0093]在一种实施例中，电流扩散层的材料为氧化锡或石墨烯。\n\n[0094]本发明还提供一种Micro-LED像素驱动电路，Micro-LED像素驱动电路包括阵列设置的像素单元驱动电路，如图3所示，每个像素单元驱动电路包括红(R)、绿(G)、蓝(B)三色子像素驱动电路，以3T1C电路为例，每一子像素电路又包括驱动晶体管T1、存储电容Cst、第一开关晶体管T2、第二开关晶体管T3，以及Micro-LED，所述Micro-LED包括若干个相互串联的子Micro-LED。\n\n[0095]本发明实施例提供了一种Micro-LED像素驱动电路，该Micro-LED像素驱动电路包括Micro-LED，所述Micro-LED芯片包括若干个相互串联的子Micro-LED；如此，在显示发光时，各子Micro-LED将各自获得一份工作电压，整个Micro-LED上的压降即为若干个子Micro-LED工作电压的总和，从而大大增加了Micro LED的跨压，降低了驱动TFT上的功耗，缓解了现有MicroLED显示器存在驱动TFT功耗严重的问题。\n\n[0096]在一种实施例中，在同一像素单元内，红光子像素驱动电路中的子Micro-LED的数量、绿光子像素驱动电路中的子Micro-LED的数量、和蓝光子像素驱动电路中的子Micro-LED的数量均相同；在不同像素单元内，像素驱动电路中的子Micro-LED的数量可以相同，也可以不同。具体的数量可根据Micro-LED显示面板的实际需求进行设置，在此不做限制。\n\n[0097]根据上述实施例可知：\n\n[0098]本发明提供一种Micro-LED芯片及其制备方法、Micro-LED显示面板、Micro-LED像素驱动电路，其Micro-LED芯片包括层叠设置的缓冲层、第一半导体层、有源层、第二半导体层、绝缘层、电流扩散层、保护层、以及第一电极和第二电极；其中，绝缘层将第一半导体层、有源层和第二半导体层分隔为至少两个子芯片，且每一子芯片内的第二半导体层，通过电流扩散层与下一子芯片内的第一半导体层连接，第一电极电连接第一子芯片的第一半导体层，第二电极电连接最末子芯片的第二半导体层。通过绝缘层实现了子芯片的分隔，通过电流扩散层实现了子芯片的串联，从而增大了Micro LED的跨压，降低了驱动TFT上的功耗，缓解了现有Micro LED显示器存在驱动TFT功耗严重的问题。\n\n[0099]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及显示领域，尤其涉及一种micro LED芯片及其制备方法。\n\n背景技术\n\n[0002]微型发光二极管(Micro-LED)由于具有更高的亮度、更好的发光效、以及更低的功耗，成为新一代显示技术发展的重点。\n\n[0003]然而，由于显示时，驱动薄膜晶体管(TFT)主要工作在饱和区，TFT源漏极两端跨压大，而Micro LED的跨压低，这就使得驱动TFT上消耗了大部分功耗，导致了功耗增加，驱动效率低。\n\n[0004]因此，现有Micro LED显示器存在驱动TFT功耗严重的问题，需要解决。\n\n发明内容\n\n[0005]本发明提供一种Micro-LED芯片及其制备方法，以缓解现有Micro LED显示器存在驱动TFT功耗严重的问题。\n\n[0006]为解决以上问题，本发明提供的技术方案如下：\n\n[0007]本发明提供一种Micro-LED芯片，包括：\n\n[0008]层叠设置的缓冲层、第一半导体层、有源层、第二半导体层、绝缘层、电流扩散层、保护层、以及第一电极和第二电极；\n\n[0009]其中，所述绝缘层将所述第一半导体层、所述有源层和所述第二半导体层分隔为至少两个子芯片，且每一所述子芯片内的第二半导体层，通过所述电流扩散层与下一所述子芯片内的第一半导体层连接，所述第一电极电连接第一所述子芯片的第一半导体层，所述第二电极电连接最末所述子芯片的第二半导体层。\n\n[0010]在本发明提供的Micro-LED芯片中，所述电流扩散层覆盖上一所述子芯片的第二半导体层，且通过所述绝缘层上的过孔与下一所述子芯片的第一半导体层连接。\n\n[0011]在本发明提供的Micro-LED芯片中，所述电流扩散层与上一所述子芯片的第二半导体层部分接触，且通过所述绝缘层上的过孔与下一所述子芯片的第一半导体层连接。\n\n[0012]在本发明提供的Micro-LED芯片中，所述第一电极通过所述电流扩散层与所述第一子芯片的第一半导体层电连接。\n\n[0013]在本发明提供的Micro-LED芯片中，所述第一电极直接与所述第一子芯片的第一半导体层电连接。\n\n[0014]在本发明提供的Micro-LED芯片中，所述第二电极通过所述电流扩散层与所述最末子芯片的第二半导体层电连接。\n\n[0015]在本发明提供的Micro-LED芯片中，所述第二电极直接与所述最末子芯片的第二半导体层电连接。\n\n[0016]在本发明提供的Micro-LED芯片中，所述第一半导体层为N型氮化镓层，所述有源层为氮化镓多量子阱层，所述第二半导体层为P型氮化镓层，所述第一电极为N型电极，所述第二电极为P型电极。\n\n[0017]在本发明提供的Micro-LED芯片中，所述电流扩散层的材料为氧化锡或石墨烯。\n\n[0018]同时，本发明提供一种Micro-LED芯片的制备方法，包括：\n\n[0019]提供衬底基板，并在所述衬底基板上依次制备缓冲层、N型氮化镓层、氮化镓多量子阱层和P型氮化镓层；\n\n[0020]对所述P型氮化镓层和氮化镓多量子阱层的预定区域进行刻蚀，形成第一过孔，并露出N型氮化镓层；\n\n[0021]对露出的所述N型氮化镓层的预定区域进行刻蚀，形成第二过孔，并露出缓冲层；\n\n[0022]在所述P型氮化镓层、所述N型氮化镓层、以及所述缓冲层上制备绝缘层；\n\n[0023]刻蚀掉所述N型氮化镓层和部分所述P型氮化镓层上的绝缘层；\n\n[0024]在所述P型半导体层、所述N型半导体层、以及所述绝缘层上制备电流扩散层；\n\n[0025]刻蚀掉所述第一过孔第一侧边绝缘层上的电流扩散层，露出绝缘层，所述第一侧边为靠近最末子芯片方向的一侧；\n\n[0026]在所述电流扩散层和所述绝缘层上制备保护层；\n\n[0027]刻蚀掉所述最末子芯片电流扩散层上的保护层，以及第一子芯片远离所述最末子芯片侧的第一过孔和第二过孔内的保护层，露出电流扩散层；\n\n[0028]在所述最末子芯片的电流扩散层上制备P型电极，在所述第一子芯片远离所述最末子芯片侧的第一过孔和第二过孔内制备N型电极；\n\n[0029]粘合临时基板；\n\n[0030]剥离所述衬底基板。\n\n[0031]本发明的有益效果为：本发明提供一种Micro-LED芯片及其制备方法，其Micro-LED芯片包括层叠设置的缓冲层、第一半导体层、有源层、第二半导体层、绝缘层、电流扩散层、保护层、以及第一电极和第二电极；其中，绝缘层将第一半导体层、有源层和第二半导体层分隔为至少两个子芯片，且每一子芯片内的第二半导体层，通过电流扩散层与下一子芯片内的第一半导体层连接，第一电极电连接第一子芯片的第一半导体层，第二电极电连接最末子芯片的第二半导体层。通过绝缘层实现了子芯片的分隔，通过电流扩散层实现了子芯片的串联，从而增大了Micro LED的跨压，降低了驱动TFT上的功耗，缓解了现有MicroLED显示器存在驱动TFT功耗严重的问题。\n\n附图说明\n\n[0032]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0033]图1为本发明实施例提供的micro-LED芯片的结构示意图。\n\n[0034]图2为本发明实施例提供的micro-LED芯片的制备流程图。\n\n[0035]图3为本发明实施例提供的micro-LED像素驱动电路示意图。\n\n具体实施方式\n\n[0036]下面将结合本发明的具体实施方案，对本发明实施方案和/或实施例中的技术方案进行清楚、完整的描述，显而易见的，下面所描述的实施方案和/或实施例仅仅是本发明一部分实施方案和/或实施例，而不是全部的实施方案和/或实施例。基于本发明中的实施方案和/或实施例，本领域普通技术人员在没有做出创造性劳动前下所获得的所有其他实施方案和/或实施例，都属于本发明保护范围。\n\n[0037]本发明所提到的方向用语，例如[上]、[下]、[左]、[右]、[前]、[后]、[内]、[外]、[侧]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明和理解本发明，而非用以限制本发明。术语“第一”、“第二”等仅用于描述目的，而不能理解为指示或是暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”等的特征可以明示或者隐含地包括一个或者更多个该特征。\n\n[0038]针对现有Micro LED显示器存在驱动TFT功耗严重的问题，本发明提供一种Micro-LED芯片可以缓解这个问题。\n\n[0039]在一种实施例中，如图1所示，本发明提供的Micro-LED芯片10包括由上到下依次层叠设置的：\n\n[0040]缓冲层101，在一种实施例中，缓冲层101为较厚的氮化镓本征层，其厚度大于2um，该实施例仅为示例性说明，并非限定。\n\n[0041]第一半导体层102、有源层103和第二半导体层104，在一种实施例中，第一半导体层102为N型氮化镓层，有源层103为氮化镓多量子阱层，第二半导体层104为P型氮化镓层，P型氮化镓层可为镁(Mg)掺杂的氮化镓层，N型氮化镓层可为硅(Si)掺杂的氮化镓层，氮化镓量子阱层可为依次重复排列的氮化铟镓/氮化镓(InGaN/GaN)层，该实施例仅为示例性说明，并非限定，在其他实施例中，第一半导体层102、有源层103和第二半导体层104的材料可根据Micro-LED芯片的实际需求设置。\n\n[0042]绝缘层105，用于将第一半导体层102、有源层103和第二半导体层104分隔为至少两个独立的子芯片；在一种实施例中，绝缘层105的材料为氧化硅、氮化硅、氮氧化硅、氮化铝、涂布玻璃、聚酰亚胺中的一种或几种，优选透光性能良好的氧化硅。\n\n[0043]电流扩散层106，用于将每一子芯片内的第二半导体层104，与下一子芯片内的第一半导体层102连接，形成欧姆接触，使P型半导体层中产生的空穴和/或N型半导体层中产生的电子能有效地注入有源层中，从而增加Micro-LED显示面板的发光效率。同时，电流扩散层106还起到反射光的作用。在一种实施例中，电流扩散层106的材料为石墨烯、氧化铟锡、氧化锌、镍、银、铝、金、铂、钯、镁、钨等导电性和反射性能都较好的材料，电流扩散层106可以是单层结构，也可以是多层结构。\n\n[0044]保护层107，用于覆盖和隔绝电流扩散层106，同时隔绝水氧和导热，减缓Micro-LED芯片10中各膜层性能的衰减，从而延长Micro-LED芯片的使用寿命。在一中实施例中，保护层107的材料为氧化硅、氮化硅、氮氧化硅、氮化铝中的任一种，优选导热性良好的氮化硅、氮氧化硅、氮化铝等材料。\n\n[0045]第一电极108和第二电极109，第一电极108电连接第一子芯片的第一半导体层102，第二电极109电连接最末子芯片的第二半导体层104。正在一种实施例中，第一电极108为N型电极，第二电极109为P型电极，其材料为铟、锡、锌、镍、银、铝、金、铂、钯、镁、钨等金属或合金中的一种或几种，可以采用单层金属结构，也可以采用多层金属结构。\n\n[0046]在每一子芯片内，N型半导体层102、有源层103和P型半导体层104构成发光PN结，当将所述发光PN结连接到外电路中，实现通过外电路给发光PN结施加电压时，N型半导体层102和P型半导体层104内分别产生电子和空穴，产生的电子和空穴均注入到有源层103内，并在有源层103内复合发出光子，实现Micro-LED的电致发光。\n\n[0047]第一子芯片的N型半导体层102与N型电极108电连接，第一子芯片的P型半导体层104与第二子芯片的N型半导体层通过电流扩散层106电连接，第二子芯片的P型半导体层104与第三子芯片的N型半导体层通过电流扩散层106电连接，依次向后，最末子芯片的P型半导体层104与P型电极109电连接，实现了各个子芯片的串联。当通过N型电极和P型电极连接外电路并对本实施例提供的Micro-LED芯片施加外电压时，各子芯片将各自获得一份工作电压，并同时通过电致发光效应发光显示，如此，整个Micro-LED芯片将需要单个子芯片相应倍数的工作电压，从而增加了整个Micro-LED芯片的压降。\n\n[0048]本发明实施例提供了一种Micro-LED芯片，其通过绝缘层将Micro-LED芯片分隔为若干个相互独立的子芯片，并通过电流扩散层将上一子芯片内的第二半导体层与下一子芯片内的第一半导体层连接，实现了各子芯片之间的串联，从而增大了Micro LED的跨压，降低了驱动TFT上的功耗，缓解了现有Micro LED显示器存在驱动TFT功耗严重的问题。\n\n[0049]图1所示的实施例仅展示出了本发明提供的Micro LED芯片的一种膜层结构，并非对本发明提供的Micro LED芯片膜层结构做限定，在其他实施例中，可根据Micro LED芯片的需求进行膜层结构设计。\n\n[0050]在一种实施例中，电流扩散层106与上一子芯片第二半导体层104的连接方式为覆盖上一子芯片第二半导体层104的台面，然后通过绝缘层105上的过孔与下一子芯片的第一半导体层102连接。\n\n[0051]在另一种实施例中，如图1所示，电流扩散层106与上一子芯片第二半导体层104的连接方式为与上一子芯片第二半导体层104的台面部分接触，然后通过绝缘层105上的过孔与下一子芯片的第一半导体层102连接。\n\n[0052]在一种实施例中，第一电极108通过电流扩散层106与第一子芯片的第一半导体层102电连接，即第一电极108与第一子芯片第一半导体层102接触的台面上任然保留有电流扩散层106。\n\n[0053]在另一种实施例中，如图1所示，第一电极108直接与第一子芯片的第一半导体层102电连接。\n\n[0054]在一种实施例中，如图1所示，第二电极109通过电流扩散层106与最末子芯片的第二半导体层104电连接。\n\n[0055]在另一种实施例中，第二电极109直接与最末子芯片的第二半导体层104电连接，即第二电极109与最末子芯片第二半导体层104接触的位置未设置电流扩散层106。\n\n[0056]同时，如图2所示，本发明实施例还提供一种micro-LED芯片的制备方法，包括：\n\n[0057]S1、提供衬底基板，并在衬底基板上依次制备缓冲层、N型氮化镓层、氮化镓多量子阱层和P型氮化镓层。\n\n[0058]在一种实施例中，衬底基板为蓝宝石衬底，蓝宝石衬底基板具有生产技术成熟、稳定性很好、机械强度高、易于处理和清洗、以及可重复利用等优点。衬底基板还可以为碳化硅(SiC)衬底、硅(Si)衬底或者其它可用的衬底材料，本发明实施例对此不做限定。\n\n[0059]在一种实施例中，通过MOCVD外延技术在清洗过后的衬底基板上依次生长缓冲层、N型氮化镓层、氮化镓多量子阱层和P型氮化镓层，其中缓冲层为较厚的氮化镓层，厚度大于2um。在P型氮化镓层生长完之后，需对芯片进行先进行酸洗，用王水冲温腐蚀30分钟，清洗去除芯片表面的金属污染物；然后通过浓硫酸常温清洗5分钟，去除表面有机物污染；再用氟化氢进行晶圆表面去氧化层处理，最后用去离子水冲洗甩干。\n\n[0060]S2、对P型氮化镓层和氮化镓多量子阱层的预定区域进行刻蚀，形成第一过孔，并露出N型氮化镓层。\n\n[0061]根据micro-LED芯片预设子芯片数量以及各子芯片的尺寸，确定预定刻蚀区域，利用光刻胶作为掩膜，ICP等离子体干法蚀刻，去除预定区域内的P型氮化镓层和氮化镓多量子阱层，刻蚀区域形成第一过孔，通过第一过孔露出N型氮化镓层。\n\n[0062]在该步骤中，对露出的N型氮化镓层的预定区域的刻蚀还可以采用其他的方法手段，不限于ICP等离子体干法蚀刻。\n\n[0063]S3、对露出的N型氮化镓层的预定区域进行刻蚀，形成第二过孔，并露出缓冲层。\n\n[0064]以光刻胶作为掩膜，ICP等离子体干法蚀刻，对第一过孔内N型氮化镓层的预定区域进行刻蚀，去除预定区域内的N型氮化镓层，露出位于其下的缓冲层，刻蚀区域形成第二过孔，同时第一过孔内的N型氮化镓层形成N型氮化镓层台面，台面面积在满足N型氮化镓层的欧姆接触要求时尽可能小。\n\n[0065]在该步骤中，对露出的N型氮化镓层的预定区域的刻蚀还可以采用其他的方法手段，如湿法腐蚀等，不限于ICP等离子体干法蚀刻。\n\n[0066]S4、在P型氮化镓层、N型氮化镓层、以及缓冲层上制备绝缘层。\n\n[0067]采用等离子增强型化学气相沉积(PECVD)等技术，在芯片上覆盖一层绝缘薄膜层，绝缘层薄膜覆盖P型氮化镓层，并通过过孔遮盖N型氮化镓层和以及缓冲层。绝缘层105的材料为氧化硅、氮化硅、氮氧化硅、氮化铝、涂布玻璃、聚酰亚胺中的一种或几种，优选透光性能良好的氧化硅。\n\n[0068]S5、刻蚀掉N型氮化镓层和部分P型氮化镓层上的绝缘层。\n\n[0069]利用刻蚀技术去除N型氮化镓层上的绝缘层，露出N型氮化镓层的台面，去除部分P型氮化镓层上的绝缘层，露出部分P型氮化镓层上的绝缘层。\n\n[0070]S6、在P型半导体层、N型半导体层、以及绝缘层上制备电流扩散层。\n\n[0071]采用磁控溅射或热蒸发等技术，在芯片上沉积一层电流扩散层，覆盖外露的P型半导体层、N型半导体层、以及绝缘层。电流扩散层106的材料为石墨烯、氧化铟锡、氧化锌、镍、银、铝、金、铂、钯、镁、钨等导电性和反射性能都较好的材料，电流扩散层106可以是单层结构，也可以是多层结构。\n\n[0072]S7、刻蚀掉第一过孔第一侧边绝缘层上的电流扩散层，露出绝缘层，所述第一侧边为靠近最末子芯片方向的一侧。\n\n[0073]采用刻蚀技术去除第一过孔第一侧边绝缘层上的电流扩散层，使得同一子芯片内的P型半导体层和N型半导体层形成断路。\n\n[0074]S8、在电流扩散层和绝缘层上制备保护层。\n\n[0075]在芯片上的再覆盖一层的绝缘材料层作为保护层，具体地，绝缘材料层采用氧化硅、氮化硅、氮氧化硅、氮化铝中的任一种制成，优选导热性良好的氮化硅、氮氧化硅、氮化铝等材料。\n\n[0076]S9、刻蚀掉最末子芯片电流扩散层上的保护层，以及第一子芯片远离最末子芯片侧的第一过孔和第二过孔内的保护层，露出电流扩散层。\n\n[0077]采用刻蚀技术去除最末子芯片电流扩散层上的保护层，以及第一子芯片远离最末子芯片侧的第一过孔和第二过孔内的保护层，使得第一子芯片的N型半导体层或与N型半导体层连接的电流传输层露出来，最末子芯片P型半导体层或者与P型半导体层连接的电流传输层露出来，以备电极制作。\n\n[0078]S10、在最末子芯片的电流扩散层上制备P型电极，在第一子芯片远离最末子芯片侧的第一过孔和第二过孔内制备N型电极。\n\n[0079]在外露的第一子芯片的N型半导体层上，或外露的与N型半导体层上连接的电流传输层上制备N型电极，与第一子芯片的N型半导体层形成欧姆接触；在最末子芯片的P型半导体层上，或与P型半导体层连接的电流传输层上制备P型电极，与最末子芯片的P型半导体形成欧姆接触。N型电极和P型电极的材料为铟、锡、锌、镍、银、铝、金、铂、钯、镁、钨等金属或合金中的一种或几种，\n\n[0080]S11、粘合临时基板。\n\n[0081]S12、剥离衬底基板。剥离的衬底基板可重复利用。\n\n[0082]本发明实施例提供了一种Micro-LED芯片的制备方法，通过刻蚀技术将Micro-LED芯片分隔为若干个彼此独立的子芯片，并通过绝缘层将子芯片隔离开来，再通过电流扩散层将上一子芯片内的第二半导体层与下一子芯片内的第一半导体层连接，实现了各子芯片之间的串联，从而增大了Micro LED的跨压，降低了驱动TFT上的功耗，缓解了现有MicroLED显示器存在驱动TFT功耗严重的问题。\n\n[0083]本发明实施例还提供一种Micro-LED显示面板，其包括如图1所示的Micro-LED芯片，Micro-LED芯片包括上到下依次层叠设置的缓冲层、第一半导体层、有源层和第二半导体层、绝缘层、电流扩散层、保护层、以及第一电极和第二电极；\n\n[0084]其中，绝缘层将第一半导体层、有源层和第二半导体层分隔为至少两个子芯片，且每一子芯片内的第二半导体层，通过电流扩散层与下一子芯片内的第一半导体层连接，第一电极电连接第一子芯片的第一半导体层，第二电极电连接最末子芯片的第二半导体层。\n\n[0085]本发明实施例提供了一种Micro-LED显示面板，该Micro-LED显示面板包括Micro-LED芯片，所述Micro-LED芯片通过绝缘层将自身分隔为若干个相互独立的子芯片，并通过电流扩散层将上一子芯片内的第二半导体层与下一子芯片内的第一半导体层连接，实现了各子芯片之间的串联，从而增大了Micro LED的跨压，降低了驱动TFT上的功耗，缓解了现有Micro LED显示器存在驱动TFT功耗严重的问题。\n\n[0086]在一种实施例中，电流扩散层覆盖上一子芯片的第二半导体层，且通过绝缘层上的过孔与下一子芯片的第一半导体层连接。\n\n[0087]在一种实施例中，电流扩散层与上一子芯片的第二半导体层部分接触，且通过绝缘层上的过孔与下一子芯片的第一半导体层连接。\n\n[0088]在一种实施例中，第一电极通过电流扩散层与第一子芯片的第一半导体层电连接。\n\n[0089]在一种实施例中，第一电极直接与第一子芯片的第一半导体层电连接。\n\n[0090]在一种实施例中，第二电极通过电流扩散层与最末子芯片的第二半导体层电连接。\n\n[0091]在一种实施例中，第二电极直接与最末子芯片的第二半导体层电连接。\n\n[0092]在一种实施例中，第一半导体层为N型氮化镓层，有源层为氮化镓多量子阱层，第二半导体层为P型氮化镓层，第一电极为N型电极，第二电极为P型电极。\n\n[0093]在一种实施例中，电流扩散层的材料为氧化锡或石墨烯。\n\n[0094]本发明还提供一种Micro-LED像素驱动电路，Micro-LED像素驱动电路包括阵列设置的像素单元驱动电路，如图3所示，每个像素单元驱动电路包括红(R)、绿(G)、蓝(B)三色子像素驱动电路，以3T1C电路为例，每一子像素电路又包括驱动晶体管T1、存储电容Cst、第一开关晶体管T2、第二开关晶体管T3，以及Micro-LED，所述Micro-LED包括若干个相互串联的子Micro-LED。\n\n[0095]本发明实施例提供了一种Micro-LED像素驱动电路，该Micro-LED像素驱动电路包括Micro-LED，所述Micro-LED芯片包括若干个相互串联的子Micro-LED；如此，在显示发光时，各子Micro-LED将各自获得一份工作电压，整个Micro-LED上的压降即为若干个子Micro-LED工作电压的总和，从而大大增加了Micro LED的跨压，降低了驱动TFT上的功耗，缓解了现有MicroLED显示器存在驱动TFT功耗严重的问题。\n\n[0096]在一种实施例中，在同一像素单元内，红光子像素驱动电路中的子Micro-LED的数量、绿光子像素驱动电路中的子Micro-LED的数量、和蓝光子像素驱动电路中的子Micro-LED的数量均相同；在不同像素单元内，像素驱动电路中的子Micro-LED的数量可以相同，也可以不同。具体的数量可根据Micro-LED显示面板的实际需求进行设置，在此不做限制。\n\n[0097]根据上述实施例可知：\n\n[0098]本发明提供一种Micro-LED芯片及其制备方法、Micro-LED显示面板、Micro-LED像素驱动电路，其Micro-LED芯片包括层叠设置的缓冲层、第一半导体层、有源层、第二半导体层、绝缘层、电流扩散层、保护层、以及第一电极和第二电极；其中，绝缘层将第一半导体层、有源层和第二半导体层分隔为至少两个子芯片，且每一子芯片内的第二半导体层，通过电流扩散层与下一子芯片内的第一半导体层连接，第一电极电连接第一子芯片的第一半导体层，第二电极电连接最末子芯片的第二半导体层。通过绝缘层实现了子芯片的分隔，通过电流扩散层实现了子芯片的串联，从而增大了Micro LED的跨压，降低了驱动TFT上的功耗，缓解了现有Micro LED显示器存在驱动TFT功耗严重的问题。\n\n[0099]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10673, 23727, '技术领域\n\n[0001]本发明涉及显示领域，尤其是涉及一种显示装置。\n\n背景技术\n\n[0002]在中小尺寸显示领域，全面屏技术成为当前的重点研发方向，也即如何通过相关技术的开发实现人机交互界面的屏占比最大化。第一代全面屏技术主要集中于屏幕尺寸比例由16:9变化为18：9甚至更大；第二代全面屏就则是进一步地压缩屏幕上下左右的边界，甚至采用柔性折叠技术最大化可视面积。而近期全面屏的另一个研究方向则是如何将显示终端的指纹识别、摄像头、面部识别、距离传感等传感器进一步地融合进显示屏的显示区，使得显示屏从单纯的显示界面逐渐过渡到全面的感知、交互界面。\n\n[0003]目前主流的显示技术包括液晶显示器(LCD)和有机发光二极管(OLED)，其中LCD为被动发光技术，通过整面背光结构照射液晶盒实现光纤的亮暗控制，而OLED技术则是采用逐颗的OLED像素主动发光，因为相较而言具有高对比、轻薄、可弯曲、可折叠等优势。另一方面，基于OLED无法背光的特性，可以很好的与现行的光学指纹识别模组兼容，因而面内光学指纹识别成为目前OLED的“独有优势”，同时业界也在开发基于OLED的屏下摄像头方案，从而可以进一步在显示模式和摄像模式间切换并且无需现行LCD挖孔方案所造成的挖孔区无法显示等优势。\n\n[0004]MicroLED相较于OLED技术具有相似的主动发光特性，同时由于无机LED本身的稳定性与高效率等特点，在技术上较OLED具有寿命长、亮度高、芯片尺寸小、响应时间长等优势，目前已经成为显示业界的重点开发方向之一。但是相较于传统面板技术通过刻蚀等“减法制造”方式，MicroLED主要依赖于加法制造方式，在技术成熟度上较低，特别是面临巨量显示画素转移时具有先天的制程良率与成本挑战，因而在短期内仍然难以成为真正成熟的显示技术。\n\n[0005]因此，有必要提出一种新的显示装置，解决了现有技术中摄像区与显示区的割裂造成视觉不完美的问题，实现真正的全面屏技术。\n\n发明内容\n\n[0006]本发明目的在于，提供一种显示装置，其采用能够提供不同背光方案的背光模块，在摄像模块不工作时，显示装置能够真正实现全屏显示。\n\n[0007]本发明提供一种显示装置，包括：背光模块，包括背光区和透光区，所述背光模块的透光区设置有至少一个MicroLED发光单元；显示面板，设置在所述背光模块一侧；摄像模块，设置在所述背光模块的另一侧，且对应于所述透光区。\n\n[0008]进一步地，所述背光模块包括：导光板，对应所述透光区设有通孔；所述通孔中设有透明基板；所述MicroLED发光单元设置在所述透明基板的一侧。\n\n[0009]进一步地，所述背光模块还包括：背光源，设于所述导光板的侧边。\n\n[0010]进一步地：所述背光模块还包括玻璃基板，所述MicroLED发光单元设在所述玻璃基板一侧且对应于所述透光区。\n\n[0011]进一步地，所述背光模块还包括：至少一个MiniLED发光单元，所述MiniLED发光单元设于所述玻璃基板的一侧且对应于所述背光区。\n\n[0012]进一步地，所述MicroLED发光单元包括红色发光单元、绿色发光单元以及蓝色发光单元。\n\n[0013]进一步地，所述红色发光单元、所述绿色发光单元以及所述蓝色发光单元同时点亮；或所述红色发光单元、所述绿色发光单元以及所述蓝色发光单元按照预设时序依次点亮。\n\n[0014]进一步地，所述显示面板包括有主显示区和透光显示区，其中所述主显示区对应于所述背光模块的所述背光区；而所述透光显示区则对应所述背光模块的所述透光区；当开启所述背光模块的所述MicroLED发光单元时，所述摄像模块不工作，而在所述显示面板的主显示区和透光显示区均能够正常显示画面，从而进入全屏显示状态；当所述摄像模块工作时，关闭所述MicroLED发光单元，所述背光区对应的显示面板正常显示画面。\n\n[0015]进一步地，所述显示面板包括：第一基板；液晶层，设于所述第一基板远离所述背光模块的一侧；第二基板，设于所述液晶层远离所述第一基板的一侧。\n\n[0016]进一步地，在所述透光显示区，所述液晶层中液晶分子为聚合物网络液晶或聚合物分散液晶，所述液晶刷新频率为70Hz～80Hz；在所述主显示区，所述液晶刷新频率为150Hz～200Hz。\n\n[0017]本发明的有益效果是：本发明提供一种显示装置，所述显示装置在在所背光模块的透光区下设置摄像模块。所述背光模块可以为直下式背光模块或侧入式背光模块。所述透光区通过在透明基板表面设置MicroLED发光单元作为所述透光区的背光。由于采用传统的固晶、打件工艺，因而具有技术成熟成本较低的优势；所述MicroLED发光单元对应所述透光区，所述MicroLED发光单元由于具有极小芯片尺寸，能够占据极小比例的面积，因而能够最大程度上保证所述透光区光线的穿透率，从而能够保证所述摄像模块所需要的穿透率，从而提高显示画面；另外所述透光区需要极少数量的MicroLED发光单元，这能够避免大量MicroLED发光单元转移所带来的应用良率与成本的挑战。\n\n附图说明\n\n[0018]下面结合附图和实施例对本发明作进一步的描述。\n\n[0019]图1为本发明一实施例显示装置的结构示意图；\n\n[0020]图2为本发明一实施例正常点亮MicroLED发光单元的平面图；\n\n[0021]图3为本发明一实施例场序式点亮MicroLED发光单元的平面图；\n\n[0022]图4为本发明一实施例显示装置的圆孔屏的结构示意图；\n\n[0023]图5为本发明一实施例显示装置的水滴屏的结构示意图；\n\n[0024]图6为本发明一实施例显示装置的“notch”屏的结构示意图；\n\n[0025]图7为本发明另一实施例显示装置的结构示意图\n\n[0026]显示装置10；\n\n[0027]显示面板100；背光模块200；摄像模块20；\n\n[0028]第一基板101；液晶层102；第二基板103；\n\n[0029]主显示区110；透光显示区120；液晶分子1021；\n\n[0030]导光板201；背光源202；背光膜层203；\n\n[0031]通孔204；透明基板205；背光区210；\n\n[0032]透光区220；MicroLED发光单元206；MiniLED发光单元207；\n\n[0033]玻璃基板209；红色发光单元2061；绿色发光单元2062；\n\n[0034]蓝色发光单元2063。\n\n具体实施方式\n\n[0035]以下是各实施例的说明是参考附加的图式，用以例示本发明可以用实施的特定实施例。本发明所提到的方向用语，例如上、下、前、后、左、右、内、外、侧等，仅是参考附图式的方向。本发明提到的元件名称，例如第一、第二等，仅是区分不同的元部件，可以更好的表达。在图中，结构相似的单元以相同标号表示。\n\n[0036]本文将参照附图来详细描述本发明的实施例。本发明可以表现为许多不同形式，本发明不应仅被解释为本文阐述的具体实施例。本发明提供这些实施例是为了解释本发明的实际应用，从而使本领域其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改方案。\n\n[0037]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。\n\n[0038]如图1所示，本发明一实施例提供一种显示装置10，包括：背光模块200、显示面板100以及摄像模块20。\n\n[0039]所述显示面板100包括：第一基板101、液晶层102以及第二基板103。\n\n[0040]所述第一基板101为TFT阵列基板，所述第二基板103为彩膜基板。\n\n[0041]所述液晶层102设于所述第一基板101远离所述背光模块200的一侧；\n\n[0042]所述第二基板103设于所述液晶层102远离所述第一基板101的一侧。\n\n[0043]所述背光模块200有背光区210以及透光区220；所述背光区210围绕所述透光区220。所述背光模块200为侧入式背光模块；在所述透光区220，所述背光模块200的透过率为50％～100％，所述背光模块200的透光率越高越好。\n\n[0044]所述背光模块200包括：导光板201、背光源202以及背光膜层203。\n\n[0045]所述导光板201具有通孔204，所述通孔204对应所述透光区220；所述通孔204中设有透明基板205，所述透明基板205可以增加所述透光区220的透光率，所述透明基板205为MicroLED基板。\n\n[0046]如图2所示，所述透明基板205上设有若干MicroLED发光单元206；所述MicroLED发光单元206包括红色发光单元2061、绿色发光单元2062以及蓝色发光单元2063。\n\n[0047]所述MicroLED发光单元206阵列式分布在所述透明基板205上，通过芯片级焊接(chipbonding)技术将所述MicroLED发光单元206焊接在所述透明基板205。\n\n[0048]所述MicroLED发光单元206按蓝色发光单元2063、绿色发光单元2062以及红色发光单元2061顺序排列；在其他实施例中也可以为红色发光单元2061、绿色发光单元2062以及蓝色发光单元2063顺序排列。\n\n[0049]由于MicroLED具有极小芯片尺寸，能够占据极小比例的面积，因而能够最大程度上保证所述透光区220的穿透率，从而能够保证所述摄像模块20所需要的穿透率从而降低对显示画质的影响；所述MicroLED发光单元206的密度为10PPI～800PPI；最优为200PPI，也可以为100PPI、300PPI、500PPI或700PPI。\n\n[0050]另外所述背光模块200的背光区210需要所述MicroLED发光单元206极少的数量，因而可以避免巨量转移MicroLED发光单元206所带来的应用良率与成本挑战。\n\n[0051]如果所述摄像模块20对于所述透光区220穿透率要求较低，则所述MicroLED发光单元206可采用正常点亮方式点亮发光单元。在所述透光区220同时设有红色发光单元2061、绿色发光单元2062以及蓝色发光单元2063，也即任意时刻三色发光单元同时点亮。\n\n[0052]如图3所示，如果所述摄像模块20对于所述透光区220穿透率要求较高，则所述MicroLED发光单元206采用场序点亮方式；所述MicroLED发光单元206三色发光单元分别以三分之一的占空比并且按照预设时序依次点亮，从而实现所述透光显示区域的彩色显示。\n\n[0053]所述场序点亮方式主要增加了所述透光区220的透光面积，提高了光线在所述透光区220的透光率，进而可以增加所述摄像模块20的摄像能力。\n\n[0054]所述背光源202设于所述导光板201的侧边；所述背光膜层203设于所述导光板201上且对应所述背光区210；所述背光膜层203的材料为白色反光油墨或者色阻，这可以增加所述背光结构的背光效率。\n\n[0055]所述显示面板100设于所述背光模块200上；所述摄像模块20设于背光模块200下且对应所述透光区220。\n\n[0056]所述显示面板100包括有主显示区110和透光显示区120，其中所述主显示区110对应于所述背光模块200的所述背光区210；而所述透光显示区120则对应所述背光模块200的所述透光区220。\n\n[0057]当开启所述背光模块200的所述MicroLED发光单元206时，所述摄像模块20不工作，而在所述显示面板100的主显示区110和透光显示区120均能够正常显示画面，从而进入全屏显示状态。\n\n[0058]当所述摄像模块20工作时，关闭所述MicroLED发光单元206，所述摄像模块20获取足够的成像管线，所述背光区210对应的显示面板100能够正常显示画面。\n\n[0059]在所述透光显示区120，所述液晶层102中液晶分子1021为聚合物网络液晶(PDLC)或聚合物分散液晶(PNLC)。所述液晶层102上下无偏光片结构，且所述液晶层102内无RGB色阻，因而能够最大程度保证所述透光显示区120的穿透率。所述透光显示区120为常黑或者常白模式。\n\n[0060]所述液晶层102一般为常黑模式，所述透光显示区120在未加电状态下，由于聚合物分散液晶的散射功能，使得背光的光线被散射功能阻挡，从而显示为”黑态”；在加电后，所述液晶呈现一致性排列，因而具有最大的穿透率，具有“透明”的特性。\n\n[0061]在所述透光显示区120，所述液晶刷新频率为50Hz～70Hz；最优为60Hz，也可以为55Hz或65Hz。在所述主显示区110，所述液晶刷新频率为150Hz～200Hz，最优为180Hz，也可以为160Hz、170Hz或190Hz。\n\n[0062]这样使得液晶刷新频率与所述场序方式点亮所述MicroLED发光单元206相对应，使得所述透明显示区的画面与所述主显示区110的画面同步显示，实现真正的全面屏技术。\n\n[0063]本发明提及的所述透光显示区120的形状并未作出限定；一般为圆孔形状(参见图4)，也可以为“水滴”(参见图5)、“notch”(参见图6)以及“美人尖”。\n\n[0064]如图7所示，本发明还提供另一实施例，与一实施例不同之处在于，所述背光模块200为直下式背光模块，所述直下式背光模块进一步地提高了所述显示装置10的背光效率。\n\n[0065]所述背光模块200包括：玻璃基板209、MiniLED发光单元207以及背光膜层203。\n\n[0066]所述玻璃基板209具有高透光率；所述MiniLED发光单元207设于所述玻璃基板209上且对应所述背光区；所述背光膜层203设于所述背光区210的所述MiniLED发光单元207上；所述MiniLED发光单元207与所述MicroLED发光单元206同层设置。\n\n[0067]本发明提供一种显示装置10，所述显示装置10采用在背光区所对应的背光模块下设置摄像模块20。\n\n[0068]所述背光模块200可以为直下式背光模块或侧入式背光模块。所述透光区220通过在透明基板205表面设置MicroLED发光单元206作为所述透光区220的背光。由于采用传统的固晶、打件工艺，因而具有技术成熟成本较低的优势；所述MicroLED发光单元206对应所述透光区220，所述MicroLED发光单元206由于具有极小芯片尺寸，能够占据极小比例的面积，因而能够最大程度上保证所述透光区220光线的穿透率，从而能够保证所述摄像模块20所需要的穿透率，从而提高显示画面的质量；另外所述透光区220需要极少数量的MicroLED发光单元206，这能够避免转移大量MicroLED发光单元206所带来的应用良率与成本的挑战。\n\n[0069]所述液晶层102在所述透明显示区域采用基于PDLC或者PNLC的无色阻透明显示方案，同样最大限度上保证了所述透光显示区120的透过率。\n\n[0070]当开启所述背光模块200的所述MicroLED发光单元206时，所述摄像模块20不工作，而在所述显示面板100的显示区和透光显示区120均能够正常显示画面，从而进入全屏显示状态。\n\n[0071]当所述摄像模块20工作时，关闭所述MicroLED发光单元206，所述摄像模块20获取足够的成像光线，所述背光区210对应的显示面板100能够正常显示画面。\n\n[0072]应当指出，对于经充分说明的本发明来说，还可具有多种变换及改型的实施方案，并不局限于上述实施方式的具体实施例。上述实施例仅仅作为本发明的说明，而不是对发明的限制。总之，本发明的保护范围应包括那些对于本领域普通技术人员来说显而易见的变换或替代以及改型。', '技术领域\n\n[0001]本发明涉及显示领域，尤其是涉及一种显示装置。\n\n背景技术\n\n[0002]在中小尺寸显示领域，全面屏技术成为当前的重点研发方向，也即如何通过相关技术的开发实现人机交互界面的屏占比最大化。第一代全面屏技术主要集中于屏幕尺寸比例由16:9变化为18：9甚至更大；第二代全面屏就则是进一步地压缩屏幕上下左右的边界，甚至采用柔性折叠技术最大化可视面积。而近期全面屏的另一个研究方向则是如何将显示终端的指纹识别、摄像头、面部识别、距离传感等传感器进一步地融合进显示屏的显示区，使得显示屏从单纯的显示界面逐渐过渡到全面的感知、交互界面。\n\n[0003]目前主流的显示技术包括液晶显示器(LCD)和有机发光二极管(OLED)，其中LCD为被动发光技术，通过整面背光结构照射液晶盒实现光纤的亮暗控制，而OLED技术则是采用逐颗的OLED像素主动发光，因为相较而言具有高对比、轻薄、可弯曲、可折叠等优势。另一方面，基于OLED无法背光的特性，可以很好的与现行的光学指纹识别模组兼容，因而面内光学指纹识别成为目前OLED的“独有优势”，同时业界也在开发基于OLED的屏下摄像头方案，从而可以进一步在显示模式和摄像模式间切换并且无需现行LCD挖孔方案所造成的挖孔区无法显示等优势。\n\n[0004]MicroLED相较于OLED技术具有相似的主动发光特性，同时由于无机LED本身的稳定性与高效率等特点，在技术上较OLED具有寿命长、亮度高、芯片尺寸小、响应时间长等优势，目前已经成为显示业界的重点开发方向之一。但是相较于传统面板技术通过刻蚀等“减法制造”方式，MicroLED主要依赖于加法制造方式，在技术成熟度上较低，特别是面临巨量显示画素转移时具有先天的制程良率与成本挑战，因而在短期内仍然难以成为真正成熟的显示技术。\n\n[0005]因此，有必要提出一种新的显示装置，解决了现有技术中摄像区与显示区的割裂造成视觉不完美的问题，实现真正的全面屏技术。\n\n发明内容\n\n[0006]本发明目的在于，提供一种显示装置，其采用能够提供不同背光方案的背光模块，在摄像模块不工作时，显示装置能够真正实现全屏显示。\n\n[0007]本发明提供一种显示装置，包括：背光模块，包括背光区和透光区，所述背光模块的透光区设置有至少一个MicroLED发光单元；显示面板，设置在所述背光模块一侧；摄像模块，设置在所述背光模块的另一侧，且对应于所述透光区。\n\n[0008]进一步地，所述背光模块包括：导光板，对应所述透光区设有通孔；所述通孔中设有透明基板；所述MicroLED发光单元设置在所述透明基板的一侧。\n\n[0009]进一步地，所述背光模块还包括：背光源，设于所述导光板的侧边。\n\n[0010]进一步地：所述背光模块还包括玻璃基板，所述MicroLED发光单元设在所述玻璃基板一侧且对应于所述透光区。\n\n[0011]进一步地，所述背光模块还包括：至少一个MiniLED发光单元，所述MiniLED发光单元设于所述玻璃基板的一侧且对应于所述背光区。\n\n[0012]进一步地，所述MicroLED发光单元包括红色发光单元、绿色发光单元以及蓝色发光单元。\n\n[0013]进一步地，所述红色发光单元、所述绿色发光单元以及所述蓝色发光单元同时点亮；或所述红色发光单元、所述绿色发光单元以及所述蓝色发光单元按照预设时序依次点亮。\n\n[0014]进一步地，所述显示面板包括有主显示区和透光显示区，其中所述主显示区对应于所述背光模块的所述背光区；而所述透光显示区则对应所述背光模块的所述透光区；当开启所述背光模块的所述MicroLED发光单元时，所述摄像模块不工作，而在所述显示面板的主显示区和透光显示区均能够正常显示画面，从而进入全屏显示状态；当所述摄像模块工作时，关闭所述MicroLED发光单元，所述背光区对应的显示面板正常显示画面。\n\n[0015]进一步地，所述显示面板包括：第一基板；液晶层，设于所述第一基板远离所述背光模块的一侧；第二基板，设于所述液晶层远离所述第一基板的一侧。\n\n[0016]进一步地，在所述透光显示区，所述液晶层中液晶分子为聚合物网络液晶或聚合物分散液晶，所述液晶刷新频率为70Hz～80Hz；在所述主显示区，所述液晶刷新频率为150Hz～200Hz。\n\n[0017]本发明的有益效果是：本发明提供一种显示装置，所述显示装置在在所背光模块的透光区下设置摄像模块。所述背光模块可以为直下式背光模块或侧入式背光模块。所述透光区通过在透明基板表面设置MicroLED发光单元作为所述透光区的背光。由于采用传统的固晶、打件工艺，因而具有技术成熟成本较低的优势；所述MicroLED发光单元对应所述透光区，所述MicroLED发光单元由于具有极小芯片尺寸，能够占据极小比例的面积，因而能够最大程度上保证所述透光区光线的穿透率，从而能够保证所述摄像模块所需要的穿透率，从而提高显示画面；另外所述透光区需要极少数量的MicroLED发光单元，这能够避免大量MicroLED发光单元转移所带来的应用良率与成本的挑战。\n\n附图说明\n\n[0018]下面结合附图和实施例对本发明作进一步的描述。\n\n[0019]图1为本发明一实施例显示装置的结构示意图；\n\n[0020]图2为本发明一实施例正常点亮MicroLED发光单元的平面图；\n\n[0021]图3为本发明一实施例场序式点亮MicroLED发光单元的平面图；\n\n[0022]图4为本发明一实施例显示装置的圆孔屏的结构示意图；\n\n[0023]图5为本发明一实施例显示装置的水滴屏的结构示意图；\n\n[0024]图6为本发明一实施例显示装置的“notch”屏的结构示意图；\n\n[0025]图7为本发明另一实施例显示装置的结构示意图\n\n[0026]显示装置10；\n\n[0027]显示面板100；背光模块200；摄像模块20；\n\n[0028]第一基板101；液晶层102；第二基板103；\n\n[0029]主显示区110；透光显示区120；液晶分子1021；\n\n[0030]导光板201；背光源202；背光膜层203；\n\n[0031]通孔204；透明基板205；背光区210；\n\n[0032]透光区220；MicroLED发光单元206；MiniLED发光单元207；\n\n[0033]玻璃基板209；红色发光单元2061；绿色发光单元2062；\n\n[0034]蓝色发光单元2063。\n\n具体实施方式\n\n[0035]以下是各实施例的说明是参考附加的图式，用以例示本发明可以用实施的特定实施例。本发明所提到的方向用语，例如上、下、前、后、左、右、内、外、侧等，仅是参考附图式的方向。本发明提到的元件名称，例如第一、第二等，仅是区分不同的元部件，可以更好的表达。在图中，结构相似的单元以相同标号表示。\n\n[0036]本文将参照附图来详细描述本发明的实施例。本发明可以表现为许多不同形式，本发明不应仅被解释为本文阐述的具体实施例。本发明提供这些实施例是为了解释本发明的实际应用，从而使本领域其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改方案。\n\n[0037]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。\n\n[0038]如图1所示，本发明一实施例提供一种显示装置10，包括：背光模块200、显示面板100以及摄像模块20。\n\n[0039]所述显示面板100包括：第一基板101、液晶层102以及第二基板103。\n\n[0040]所述第一基板101为TFT阵列基板，所述第二基板103为彩膜基板。\n\n[0041]所述液晶层102设于所述第一基板101远离所述背光模块200的一侧；\n\n[0042]所述第二基板103设于所述液晶层102远离所述第一基板101的一侧。\n\n[0043]所述背光模块200有背光区210以及透光区220；所述背光区210围绕所述透光区220。所述背光模块200为侧入式背光模块；在所述透光区220，所述背光模块200的透过率为50％～100％，所述背光模块200的透光率越高越好。\n\n[0044]所述背光模块200包括：导光板201、背光源202以及背光膜层203。\n\n[0045]所述导光板201具有通孔204，所述通孔204对应所述透光区220；所述通孔204中设有透明基板205，所述透明基板205可以增加所述透光区220的透光率，所述透明基板205为MicroLED基板。\n\n[0046]如图2所示，所述透明基板205上设有若干MicroLED发光单元206；所述MicroLED发光单元206包括红色发光单元2061、绿色发光单元2062以及蓝色发光单元2063。\n\n[0047]所述MicroLED发光单元206阵列式分布在所述透明基板205上，通过芯片级焊接(chipbonding)技术将所述MicroLED发光单元206焊接在所述透明基板205。\n\n[0048]所述MicroLED发光单元206按蓝色发光单元2063、绿色发光单元2062以及红色发光单元2061顺序排列；在其他实施例中也可以为红色发光单元2061、绿色发光单元2062以及蓝色发光单元2063顺序排列。\n\n[0049]由于MicroLED具有极小芯片尺寸，能够占据极小比例的面积，因而能够最大程度上保证所述透光区220的穿透率，从而能够保证所述摄像模块20所需要的穿透率从而降低对显示画质的影响；所述MicroLED发光单元206的密度为10PPI～800PPI；最优为200PPI，也可以为100PPI、300PPI、500PPI或700PPI。\n\n[0050]另外所述背光模块200的背光区210需要所述MicroLED发光单元206极少的数量，因而可以避免巨量转移MicroLED发光单元206所带来的应用良率与成本挑战。\n\n[0051]如果所述摄像模块20对于所述透光区220穿透率要求较低，则所述MicroLED发光单元206可采用正常点亮方式点亮发光单元。在所述透光区220同时设有红色发光单元2061、绿色发光单元2062以及蓝色发光单元2063，也即任意时刻三色发光单元同时点亮。\n\n[0052]如图3所示，如果所述摄像模块20对于所述透光区220穿透率要求较高，则所述MicroLED发光单元206采用场序点亮方式；所述MicroLED发光单元206三色发光单元分别以三分之一的占空比并且按照预设时序依次点亮，从而实现所述透光显示区域的彩色显示。\n\n[0053]所述场序点亮方式主要增加了所述透光区220的透光面积，提高了光线在所述透光区220的透光率，进而可以增加所述摄像模块20的摄像能力。\n\n[0054]所述背光源202设于所述导光板201的侧边；所述背光膜层203设于所述导光板201上且对应所述背光区210；所述背光膜层203的材料为白色反光油墨或者色阻，这可以增加所述背光结构的背光效率。\n\n[0055]所述显示面板100设于所述背光模块200上；所述摄像模块20设于背光模块200下且对应所述透光区220。\n\n[0056]所述显示面板100包括有主显示区110和透光显示区120，其中所述主显示区110对应于所述背光模块200的所述背光区210；而所述透光显示区120则对应所述背光模块200的所述透光区220。\n\n[0057]当开启所述背光模块200的所述MicroLED发光单元206时，所述摄像模块20不工作，而在所述显示面板100的主显示区110和透光显示区120均能够正常显示画面，从而进入全屏显示状态。\n\n[0058]当所述摄像模块20工作时，关闭所述MicroLED发光单元206，所述摄像模块20获取足够的成像管线，所述背光区210对应的显示面板100能够正常显示画面。\n\n[0059]在所述透光显示区120，所述液晶层102中液晶分子1021为聚合物网络液晶(PDLC)或聚合物分散液晶(PNLC)。所述液晶层102上下无偏光片结构，且所述液晶层102内无RGB色阻，因而能够最大程度保证所述透光显示区120的穿透率。所述透光显示区120为常黑或者常白模式。\n\n[0060]所述液晶层102一般为常黑模式，所述透光显示区120在未加电状态下，由于聚合物分散液晶的散射功能，使得背光的光线被散射功能阻挡，从而显示为”黑态”；在加电后，所述液晶呈现一致性排列，因而具有最大的穿透率，具有“透明”的特性。\n\n[0061]在所述透光显示区120，所述液晶刷新频率为50Hz～70Hz；最优为60Hz，也可以为55Hz或65Hz。在所述主显示区110，所述液晶刷新频率为150Hz～200Hz，最优为180Hz，也可以为160Hz、170Hz或190Hz。\n\n[0062]这样使得液晶刷新频率与所述场序方式点亮所述MicroLED发光单元206相对应，使得所述透明显示区的画面与所述主显示区110的画面同步显示，实现真正的全面屏技术。\n\n[0063]本发明提及的所述透光显示区120的形状并未作出限定；一般为圆孔形状(参见图4)，也可以为“水滴”(参见图5)、“notch”(参见图6)以及“美人尖”。\n\n[0064]如图7所示，本发明还提供另一实施例，与一实施例不同之处在于，所述背光模块200为直下式背光模块，所述直下式背光模块进一步地提高了所述显示装置10的背光效率。\n\n[0065]所述背光模块200包括：玻璃基板209、MiniLED发光单元207以及背光膜层203。\n\n[0066]所述玻璃基板209具有高透光率；所述MiniLED发光单元207设于所述玻璃基板209上且对应所述背光区；所述背光膜层203设于所述背光区210的所述MiniLED发光单元207上；所述MiniLED发光单元207与所述MicroLED发光单元206同层设置。\n\n[0067]本发明提供一种显示装置10，所述显示装置10采用在背光区所对应的背光模块下设置摄像模块20。\n\n[0068]所述背光模块200可以为直下式背光模块或侧入式背光模块。所述透光区220通过在透明基板205表面设置MicroLED发光单元206作为所述透光区220的背光。由于采用传统的固晶、打件工艺，因而具有技术成熟成本较低的优势；所述MicroLED发光单元206对应所述透光区220，所述MicroLED发光单元206由于具有极小芯片尺寸，能够占据极小比例的面积，因而能够最大程度上保证所述透光区220光线的穿透率，从而能够保证所述摄像模块20所需要的穿透率，从而提高显示画面的质量；另外所述透光区220需要极少数量的MicroLED发光单元206，这能够避免转移大量MicroLED发光单元206所带来的应用良率与成本的挑战。\n\n[0069]所述液晶层102在所述透明显示区域采用基于PDLC或者PNLC的无色阻透明显示方案，同样最大限度上保证了所述透光显示区120的透过率。\n\n[0070]当开启所述背光模块200的所述MicroLED发光单元206时，所述摄像模块20不工作，而在所述显示面板100的显示区和透光显示区120均能够正常显示画面，从而进入全屏显示状态。\n\n[0071]当所述摄像模块20工作时，关闭所述MicroLED发光单元206，所述摄像模块20获取足够的成像光线，所述背光区210对应的显示面板100能够正常显示画面。\n\n[0072]应当指出，对于经充分说明的本发明来说，还可具有多种变换及改型的实施方案，并不局限于上述实施方式的具体实施例。上述实施例仅仅作为本发明的说明，而不是对发明的限制。总之，本发明的保护范围应包括那些对于本领域普通技术人员来说显而易见的变换或替代以及改型。');
INSERT INTO `os_patent_instruction_text` VALUES (10674, 23728, '技术领域\n\n[0001]本申请涉及电子显示领域，尤其涉及一种背光结构和显示面板。\n\n背景技术\n\n[0002]次毫米发光二极管(mini-LED)极大的降低了液晶面板中背光光源的尺寸，可以让背光单元的尺寸小于100微米，将背光光源薄膜化、微小化、阵列化。使用mini-LED的液晶面板能够实现每个图元单独定址，单独驱动发光。\n\n[0003]随着mini-LED的兴起，液晶面板的背光结构势必发生很大的改变。为了实现显示面板的薄型化，以及适应用户对于显示面板多分区的需求，在mini-LED的背光结构中必然省去扩散板，使光学膜片贴近甚至直接贴合mini-LED灯板。因此，如何在省略扩散板的同时保证背光光源的混光效果成为了目前急需解决的问题。\n\n发明内容\n\n[0004]本申请提供了一种背光结构和显示面板，所述背光结构能够优化mini-LED灯板的混光效果。\n\n[0005]为解决上述问题，本申请提供一种背光结构，所述背光结构包括：\n\n[0006]背光光源，所述背光光源包括多个设置在灯板上的次毫米发光二极管；\n\n[0007]第一光学膜片，所述第一光学膜片位于所述背光光源上方；\n\n[0008]第二光学膜片，所述第二光学膜片位于所述第一光学膜片上方；\n\n[0009]其中，所述第一光学膜片包括靠近所述背光光源的第一表面和远离所述背光光源的第二表面，所述第一表面具有多个第一光扩散结构，所述第二表面具有多个第一支撑反射结构，所述多个第一光扩散结构与所述多个第一支撑反射结构间隔设置。\n\n[0010]其中，所述多个第一光扩散结构在所述灯板上的投影和所述多个第一支撑反射结构在所述灯板上的投影不重合。\n\n[0011]根据本申请的其中一个方面，所述多个第一光扩散结构和所述多个次毫米发光二极管对应设置，每一个次毫米发光二极管位于与所述次毫米发光二极管对应的第一光扩散结构在所述灯板上的投影的几何中心处。\n\n[0012]根据本申请的其中一个方面，每一个第一光扩散结构对应一个光扩散范围，所述光扩散范围包括多个第一边界，所述次毫米发光二极管和与所述次毫米发光二极管对应的第一光扩散结构的边界上的任意一点之间的连线构成一个第一边界，所述第一边界与垂直方向的夹角大于或等于30度。\n\n[0013]根据本申请的其中一个方面，所述多个第一支撑反射结构沿垂直于所述第一光学膜片表面的方向的截面为三角形；\n\n[0014]其中，所述三角形的第一侧边平行于距离所述第一侧边最近的一个第一边界，所述三角形的第二侧边平行于距离所述第二侧边最近的另一个第一边界。\n\n[0015]根据本申请的其中一个方面，所述多个第一支撑反射结构的表面具有反射涂层，所述反射涂层的表面为镜面结构。\n\n[0016]根据本申请的其中一个方面，所述第二光学膜片包括靠近所述背光光源的第三表面和远离所述背光光源的第四表面，所述第三表面具有多个第二光扩散结构。\n\n[0017]根据本申请的其中一个方面，所述多个第二光扩散结构和所述多个第一光扩散结构对应设置；\n\n[0018]其中，对应设置的第一光扩散结构在所述灯板上的投影的几何中心和第二光扩散结构在所述灯板上的投影的几何中心重叠；\n\n[0019]其中，每一个第二光扩散结构的边界位于与所述第二光扩散结构对应设置的第一个光扩散结构的第一边界的延长线上。\n\n[0020]根据本申请的其中一个方面，所述背光结构还包括位于所述第四表面上的多个第二支撑反射结构，所述多个第二光扩散结构在所述灯板上的投影和所述多个第二支撑反射结构在所述灯板上的投影不重合。\n\n[0021]根据本申请的其中一个方面，所述背光结构还包括位于所述第二光学膜片上方的第三光学膜片，所述第三光学膜片包括靠近所述背光光源的第五表面和远离所述背光光源的第六表面，所述第五表面具有多个第三光扩散结构，所述多个第三光扩散结构和所述多个第一光扩散结构对应设置；\n\n[0022]其中，对应设置的第一光扩散结构在所述灯板上的投影的几何中心和第三光扩散结构在所述灯板上的投影的几何中心重叠；\n\n[0023]其中，每一个第三光扩散结构的边界位于与所述第三光扩散结构对应设置的第一个光扩散结构的第一边界的延长线上。\n\n[0024]根据本申请的其中一个方面，所述背光结构还包括位于所述第一光学膜片下方的微透镜阵列。\n\n[0025]根据本申请的其中一个方面，所述微透镜阵列包括支撑板，所述支撑板包括靠近所述背光光源的第七表面和远离所述背光光源的第八表面，所述第七表面具有多个入光结构，所述第八表面具有多个与所述多个入光结构对应的出光结构，所述多个入光结构和与所述多个入光结构对应的多个出光结构构成多个微透镜结构；\n\n[0026]其中，所述多个入光结构通过第一模具在所述第七表面上压滚成型，所述多个出光结构通过第二模具在所述第八表面上压滚成型。\n\n[0027]相应的，本申请还提供了一种显示面板，所述显示面板包括如前所述的背光结构。\n\n[0028]本申请的背光结构包括第一光学膜片和第二光学膜片，所述第一光学膜片包括靠近所述背光光源的第一表面和远离所述背光光源的第二表面，所述第一表面具有多个第一光扩散结构，所述第二表面具有多个第一支撑反射结构。所述光扩散结构能够降低mini-LED上方60度范围内的光线的亮度，从而避免mini-LED产生的光线呈朗伯分布，优化了mini-LED的混光效果。所述第一支撑反射结构一方面用于支撑第二光学膜片，另一方面用于反射射到所述第一支撑反射结构上的光线，减小了光线损耗。\n\n附图说明\n\n[0029]图1为本申请的一个具体实施例中的背光结构的结构示意图；\n\n[0030]图2为本申请的另一个具体实施例中的背光结构的结构示意图。\n\n具体实施方式\n\n[0031]以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。\n\n[0032]本申请提供了一种背光结构和显示面板，所述背光结构能够优化mini-LED灯板的混光效果。参见图1，图1为本申请的一个具体实施例中的背光结构的结构示意图，所述背光结构包括背光光源、第一光学膜片100和第二光学膜片200。\n\n[0033]所述背光光源包括多个设置在灯板500上的次毫米发光二极管400。优选的，所述背光光源包括多个灯板500，所述灯板500为条状灯板，所述多个次毫米发光二极管400沿第一方向呈条状排列。所述多个灯板500沿第二方向排列，所述第二方向与所述第一方向垂直。\n\n[0034]本申请中，所述第一光学膜片100位于所述背光光源上方。其中，所述第一光学膜片100包括靠近所述背光光源的第一表面和远离所述背光光源的第二表面，所述第一表面具有多个第一光扩散结构110，所述第二表面具有多个第一支撑反射结构120，所述多个第一光扩散结构110与所述多个第一支撑反射结构120间隔设置。\n\n[0035]所述多个第一光扩散结构110用于降低mini-LED上方60度范围内的光线的亮度，从而避免mini-LED产生的光线呈朗伯分布，优化了mini-LED的混光效果。所述多个第一光扩散结构110的表面具有凹凸不平的结构，所述凹凸不平的结构能够有效的分散mini-LED发出的光线的传播方向，使呈朗伯分布的光线向不同的方向均匀传播。本申请中，所述多个第一光扩散结构110可以通过颗粒物涂布的方式形成，也可以采用压印的方法形成。\n\n[0036]本实施例中，为了避免所述多个第一光扩散结构110遮挡次毫米发光二极管400发出的光线，所述多个第一光扩散结构110在所述灯板500上的投影和所述多个第一支撑反射结构120在所述灯板500上的投影不重合。\n\n[0037]本实施例中，为了取得最好的光扩散效果，所述多个第一光扩散结构110和所述多个次毫米发光二极管400对应设置，每一个次毫米发光二极管400位于与所述次毫米发光二极管400对应的第一光扩散结构110在所述灯板500上的投影的几何中心处。\n\n[0038]本实施例中，每一个第一光扩散结构110对应一个光扩散范围，所述光扩散范围包括多个第一边界，所述次毫米发光二极管400和与所述次毫米发光二极管400对应的第一光扩散结构110的边界上的任意一点之间的连线构成一个第一边界，所述第一边界与垂直方向的夹角大于或等于30度。\n\n[0039]本实施例中，所述多个第一支撑反射结构120沿垂直于所述第一光学膜片100表面的方向的截面为三角形。所述三角形的第一侧边平行于距离所述第一侧边最近的一个第一边界，所述三角形的第二侧边平行于距离所述第一侧边最近的另一个第一边界。\n\n[0040]在本申请的其他实施例中，所述多个第一支撑反射结构120沿垂直于所述第一光学膜片100表面的方向的截面为梯形。所述梯形的第一侧腰平行于距离所述第一侧腰最近的一个第一边界，所述三角形的第二侧腰平行于距离所述第一侧腰最近的另一个第一边界。\n\n[0041]本申请中，所述多个第一支撑反射结构120的表面具有反射涂层，所述反射涂层的表面为镜面结构。反射涂层能够将照射到所述第一支撑反射结构120上的光线反射向所述第一光学膜片上方，避免背光光线被第一支撑反射结构120吸收，提高了背光光源的光线利用率。镜面结构能够进一步提高第一支撑反射结构120的反射效果。\n\n[0042]本申请中，所述第二光学膜片200位于所述第一光学膜片100上方。所述第二光学膜片200包括靠近所述背光光源的第三表面和远离所述背光光源的第四表面，所述第三表面具有多个第二光扩散结构210。\n\n[0043]本实施例中，所述多个第二光扩散结构210和所述多个第一光扩散结构110对应设置。对应设置的第一光扩散结构110在所述灯板500上的投影的几何中心和第二光扩散结构210在所述灯板500上的投影的几何中心重叠。每一个第二光扩散结构210的边界位于与所述第二光扩散结构210对应设置的第一个光扩散结构的第一边界的延长线上。\n\n[0044]所述第二光扩散结构210的光扩散范围大于所述第一光扩散结构110的光扩散范围，能够对穿透第一光学膜片的光线进一步优化，从而取得更好的混光效果。\n\n[0045]在本实施例中，为了进一步优化混光效果，所述背光结构还包括位于所述第四表面上的多个第二支撑反射结构220和位于所述第二光学膜片200上方的第三光学膜片300。\n\n[0046]所述多个第二光扩散结构210在所述灯板500上的投影和所述多个第二支撑反射结构220在所述灯板500上的投影不重合。\n\n[0047]所述第三光学膜片300包括靠近所述背光光源的第五表面和远离所述背光光源的第六表面，所述第五表面具有多个第三光扩散结构310，所述多个第三光扩散结构310和所述多个第一光扩散结构110对应设置。对应设置的第一光扩散结构110在所述灯板500上的投影的几何中心和第三光扩散结构310在所述灯板500上的投影的几何中心重叠。每一个第三光扩散结构310的边界位于与所述第三光扩散结构对应设置的第一个光扩散结构的第一边界的延长线上。\n\n[0048]参见图2，图2为本申请的另一个具体实施例中的背光结构的结构示意图。在本实施例中，所述背光结构还包括位于所述第一光学膜片100下方的微透镜阵列600。所述微透镜阵列600通过第三支撑反射结构620与所述第一光学膜片100隔离。\n\n[0049]所述微透镜阵列600包括支撑板，所述支撑板包括靠近所述背光光源的第七表面和远离所述背光光源的第八表面，所述第七表面具有多个入光结构，所述第八表面具有多个与所述多个入光结构对应的出光结构，所述多个入光结构和与所述多个入光结构对应的多个出光结构构成多个微透镜结构。所述多个入光结构通过第一模具在所述第七表面上压滚成型，所述多个出光结构通过第二模具在所述第八表面上压滚成型。\n\n[0050]相应的，本申请还提供了一种显示面板，所述显示面板包括如前所述的背光结构。\n\n[0051]本申请的背光结构包括第一光学膜片和第二光学膜片，所述第一光学膜片包括靠近所述背光光源的第一表面和远离所述背光光源的第二表面，所述第一表面具有多个第一光扩散结构，所述第二表面具有多个第一支撑反射结构。所述光扩散结构能够降低mini-LED上方60度范围内的光线的亮度，从而避免mini-LED产生的光线呈朗伯分布，优化了mini-LED的混光效果。所述第一支撑反射结构一方面用于支撑第二光学膜片，另一方面用于反射射到所述第一支撑反射结构上的光线，减小了光线损耗。\n\n[0052]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本申请涉及电子显示领域，尤其涉及一种背光结构和显示面板。\n\n背景技术\n\n[0002]次毫米发光二极管(mini-LED)极大的降低了液晶面板中背光光源的尺寸，可以让背光单元的尺寸小于100微米，将背光光源薄膜化、微小化、阵列化。使用mini-LED的液晶面板能够实现每个图元单独定址，单独驱动发光。\n\n[0003]随着mini-LED的兴起，液晶面板的背光结构势必发生很大的改变。为了实现显示面板的薄型化，以及适应用户对于显示面板多分区的需求，在mini-LED的背光结构中必然省去扩散板，使光学膜片贴近甚至直接贴合mini-LED灯板。因此，如何在省略扩散板的同时保证背光光源的混光效果成为了目前急需解决的问题。\n\n发明内容\n\n[0004]本申请提供了一种背光结构和显示面板，所述背光结构能够优化mini-LED灯板的混光效果。\n\n[0005]为解决上述问题，本申请提供一种背光结构，所述背光结构包括：\n\n[0006]背光光源，所述背光光源包括多个设置在灯板上的次毫米发光二极管；\n\n[0007]第一光学膜片，所述第一光学膜片位于所述背光光源上方；\n\n[0008]第二光学膜片，所述第二光学膜片位于所述第一光学膜片上方；\n\n[0009]其中，所述第一光学膜片包括靠近所述背光光源的第一表面和远离所述背光光源的第二表面，所述第一表面具有多个第一光扩散结构，所述第二表面具有多个第一支撑反射结构，所述多个第一光扩散结构与所述多个第一支撑反射结构间隔设置。\n\n[0010]其中，所述多个第一光扩散结构在所述灯板上的投影和所述多个第一支撑反射结构在所述灯板上的投影不重合。\n\n[0011]根据本申请的其中一个方面，所述多个第一光扩散结构和所述多个次毫米发光二极管对应设置，每一个次毫米发光二极管位于与所述次毫米发光二极管对应的第一光扩散结构在所述灯板上的投影的几何中心处。\n\n[0012]根据本申请的其中一个方面，每一个第一光扩散结构对应一个光扩散范围，所述光扩散范围包括多个第一边界，所述次毫米发光二极管和与所述次毫米发光二极管对应的第一光扩散结构的边界上的任意一点之间的连线构成一个第一边界，所述第一边界与垂直方向的夹角大于或等于30度。\n\n[0013]根据本申请的其中一个方面，所述多个第一支撑反射结构沿垂直于所述第一光学膜片表面的方向的截面为三角形；\n\n[0014]其中，所述三角形的第一侧边平行于距离所述第一侧边最近的一个第一边界，所述三角形的第二侧边平行于距离所述第二侧边最近的另一个第一边界。\n\n[0015]根据本申请的其中一个方面，所述多个第一支撑反射结构的表面具有反射涂层，所述反射涂层的表面为镜面结构。\n\n[0016]根据本申请的其中一个方面，所述第二光学膜片包括靠近所述背光光源的第三表面和远离所述背光光源的第四表面，所述第三表面具有多个第二光扩散结构。\n\n[0017]根据本申请的其中一个方面，所述多个第二光扩散结构和所述多个第一光扩散结构对应设置；\n\n[0018]其中，对应设置的第一光扩散结构在所述灯板上的投影的几何中心和第二光扩散结构在所述灯板上的投影的几何中心重叠；\n\n[0019]其中，每一个第二光扩散结构的边界位于与所述第二光扩散结构对应设置的第一个光扩散结构的第一边界的延长线上。\n\n[0020]根据本申请的其中一个方面，所述背光结构还包括位于所述第四表面上的多个第二支撑反射结构，所述多个第二光扩散结构在所述灯板上的投影和所述多个第二支撑反射结构在所述灯板上的投影不重合。\n\n[0021]根据本申请的其中一个方面，所述背光结构还包括位于所述第二光学膜片上方的第三光学膜片，所述第三光学膜片包括靠近所述背光光源的第五表面和远离所述背光光源的第六表面，所述第五表面具有多个第三光扩散结构，所述多个第三光扩散结构和所述多个第一光扩散结构对应设置；\n\n[0022]其中，对应设置的第一光扩散结构在所述灯板上的投影的几何中心和第三光扩散结构在所述灯板上的投影的几何中心重叠；\n\n[0023]其中，每一个第三光扩散结构的边界位于与所述第三光扩散结构对应设置的第一个光扩散结构的第一边界的延长线上。\n\n[0024]根据本申请的其中一个方面，所述背光结构还包括位于所述第一光学膜片下方的微透镜阵列。\n\n[0025]根据本申请的其中一个方面，所述微透镜阵列包括支撑板，所述支撑板包括靠近所述背光光源的第七表面和远离所述背光光源的第八表面，所述第七表面具有多个入光结构，所述第八表面具有多个与所述多个入光结构对应的出光结构，所述多个入光结构和与所述多个入光结构对应的多个出光结构构成多个微透镜结构；\n\n[0026]其中，所述多个入光结构通过第一模具在所述第七表面上压滚成型，所述多个出光结构通过第二模具在所述第八表面上压滚成型。\n\n[0027]相应的，本申请还提供了一种显示面板，所述显示面板包括如前所述的背光结构。\n\n[0028]本申请的背光结构包括第一光学膜片和第二光学膜片，所述第一光学膜片包括靠近所述背光光源的第一表面和远离所述背光光源的第二表面，所述第一表面具有多个第一光扩散结构，所述第二表面具有多个第一支撑反射结构。所述光扩散结构能够降低mini-LED上方60度范围内的光线的亮度，从而避免mini-LED产生的光线呈朗伯分布，优化了mini-LED的混光效果。所述第一支撑反射结构一方面用于支撑第二光学膜片，另一方面用于反射射到所述第一支撑反射结构上的光线，减小了光线损耗。\n\n附图说明\n\n[0029]图1为本申请的一个具体实施例中的背光结构的结构示意图；\n\n[0030]图2为本申请的另一个具体实施例中的背光结构的结构示意图。\n\n具体实施方式\n\n[0031]以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。\n\n[0032]本申请提供了一种背光结构和显示面板，所述背光结构能够优化mini-LED灯板的混光效果。参见图1，图1为本申请的一个具体实施例中的背光结构的结构示意图，所述背光结构包括背光光源、第一光学膜片100和第二光学膜片200。\n\n[0033]所述背光光源包括多个设置在灯板500上的次毫米发光二极管400。优选的，所述背光光源包括多个灯板500，所述灯板500为条状灯板，所述多个次毫米发光二极管400沿第一方向呈条状排列。所述多个灯板500沿第二方向排列，所述第二方向与所述第一方向垂直。\n\n[0034]本申请中，所述第一光学膜片100位于所述背光光源上方。其中，所述第一光学膜片100包括靠近所述背光光源的第一表面和远离所述背光光源的第二表面，所述第一表面具有多个第一光扩散结构110，所述第二表面具有多个第一支撑反射结构120，所述多个第一光扩散结构110与所述多个第一支撑反射结构120间隔设置。\n\n[0035]所述多个第一光扩散结构110用于降低mini-LED上方60度范围内的光线的亮度，从而避免mini-LED产生的光线呈朗伯分布，优化了mini-LED的混光效果。所述多个第一光扩散结构110的表面具有凹凸不平的结构，所述凹凸不平的结构能够有效的分散mini-LED发出的光线的传播方向，使呈朗伯分布的光线向不同的方向均匀传播。本申请中，所述多个第一光扩散结构110可以通过颗粒物涂布的方式形成，也可以采用压印的方法形成。\n\n[0036]本实施例中，为了避免所述多个第一光扩散结构110遮挡次毫米发光二极管400发出的光线，所述多个第一光扩散结构110在所述灯板500上的投影和所述多个第一支撑反射结构120在所述灯板500上的投影不重合。\n\n[0037]本实施例中，为了取得最好的光扩散效果，所述多个第一光扩散结构110和所述多个次毫米发光二极管400对应设置，每一个次毫米发光二极管400位于与所述次毫米发光二极管400对应的第一光扩散结构110在所述灯板500上的投影的几何中心处。\n\n[0038]本实施例中，每一个第一光扩散结构110对应一个光扩散范围，所述光扩散范围包括多个第一边界，所述次毫米发光二极管400和与所述次毫米发光二极管400对应的第一光扩散结构110的边界上的任意一点之间的连线构成一个第一边界，所述第一边界与垂直方向的夹角大于或等于30度。\n\n[0039]本实施例中，所述多个第一支撑反射结构120沿垂直于所述第一光学膜片100表面的方向的截面为三角形。所述三角形的第一侧边平行于距离所述第一侧边最近的一个第一边界，所述三角形的第二侧边平行于距离所述第一侧边最近的另一个第一边界。\n\n[0040]在本申请的其他实施例中，所述多个第一支撑反射结构120沿垂直于所述第一光学膜片100表面的方向的截面为梯形。所述梯形的第一侧腰平行于距离所述第一侧腰最近的一个第一边界，所述三角形的第二侧腰平行于距离所述第一侧腰最近的另一个第一边界。\n\n[0041]本申请中，所述多个第一支撑反射结构120的表面具有反射涂层，所述反射涂层的表面为镜面结构。反射涂层能够将照射到所述第一支撑反射结构120上的光线反射向所述第一光学膜片上方，避免背光光线被第一支撑反射结构120吸收，提高了背光光源的光线利用率。镜面结构能够进一步提高第一支撑反射结构120的反射效果。\n\n[0042]本申请中，所述第二光学膜片200位于所述第一光学膜片100上方。所述第二光学膜片200包括靠近所述背光光源的第三表面和远离所述背光光源的第四表面，所述第三表面具有多个第二光扩散结构210。\n\n[0043]本实施例中，所述多个第二光扩散结构210和所述多个第一光扩散结构110对应设置。对应设置的第一光扩散结构110在所述灯板500上的投影的几何中心和第二光扩散结构210在所述灯板500上的投影的几何中心重叠。每一个第二光扩散结构210的边界位于与所述第二光扩散结构210对应设置的第一个光扩散结构的第一边界的延长线上。\n\n[0044]所述第二光扩散结构210的光扩散范围大于所述第一光扩散结构110的光扩散范围，能够对穿透第一光学膜片的光线进一步优化，从而取得更好的混光效果。\n\n[0045]在本实施例中，为了进一步优化混光效果，所述背光结构还包括位于所述第四表面上的多个第二支撑反射结构220和位于所述第二光学膜片200上方的第三光学膜片300。\n\n[0046]所述多个第二光扩散结构210在所述灯板500上的投影和所述多个第二支撑反射结构220在所述灯板500上的投影不重合。\n\n[0047]所述第三光学膜片300包括靠近所述背光光源的第五表面和远离所述背光光源的第六表面，所述第五表面具有多个第三光扩散结构310，所述多个第三光扩散结构310和所述多个第一光扩散结构110对应设置。对应设置的第一光扩散结构110在所述灯板500上的投影的几何中心和第三光扩散结构310在所述灯板500上的投影的几何中心重叠。每一个第三光扩散结构310的边界位于与所述第三光扩散结构对应设置的第一个光扩散结构的第一边界的延长线上。\n\n[0048]参见图2，图2为本申请的另一个具体实施例中的背光结构的结构示意图。在本实施例中，所述背光结构还包括位于所述第一光学膜片100下方的微透镜阵列600。所述微透镜阵列600通过第三支撑反射结构620与所述第一光学膜片100隔离。\n\n[0049]所述微透镜阵列600包括支撑板，所述支撑板包括靠近所述背光光源的第七表面和远离所述背光光源的第八表面，所述第七表面具有多个入光结构，所述第八表面具有多个与所述多个入光结构对应的出光结构，所述多个入光结构和与所述多个入光结构对应的多个出光结构构成多个微透镜结构。所述多个入光结构通过第一模具在所述第七表面上压滚成型，所述多个出光结构通过第二模具在所述第八表面上压滚成型。\n\n[0050]相应的，本申请还提供了一种显示面板，所述显示面板包括如前所述的背光结构。\n\n[0051]本申请的背光结构包括第一光学膜片和第二光学膜片，所述第一光学膜片包括靠近所述背光光源的第一表面和远离所述背光光源的第二表面，所述第一表面具有多个第一光扩散结构，所述第二表面具有多个第一支撑反射结构。所述光扩散结构能够降低mini-LED上方60度范围内的光线的亮度，从而避免mini-LED产生的光线呈朗伯分布，优化了mini-LED的混光效果。所述第一支撑反射结构一方面用于支撑第二光学膜片，另一方面用于反射射到所述第一支撑反射结构上的光线，减小了光线损耗。\n\n[0052]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10675, 23729, '技术领域\n\n[0001]本申请涉及显示领域，特别是涉及一种微型发光二极管及显示面板。\n\n背景技术\n\n[0002]现今显示器为了追求自发光以增加对比对并朝着可挠性显示器发展，因此由液晶显示器(liquid-crystal display，缩写：LCD)朝有机电激发光显示器(OrganicElectroluminescence Display，缩写：OELD)发展，OLED的优点即为可自发光达成显示的需求，不需要液晶并且可以制作柔性、可挠性显示器，在现阶段的发展里相当的热门。但是OLED显示器的缺点为制程难度高，且蒸镀制程、封装制程尚未达到最佳化，随之而来的是制程良率低、生产成本增加。\n\n[0003]目前业界利用微发光二极管显示器(Micro Light Emitting Diode Display，缩写为Micro LED)试图取代OLED，其主要的优点为制程成熟、耗电量低、可以达到高对比的需求。\n\n[0004]而微发光二极管为微型化发光二极管的阵列结构，具有自发光显示特性，搭配主动式组件每一点画素都能单独驱动发光，优点包括高亮度、低功耗、体积较小、超高分辨率与色彩饱和等。微发光二极管与有机发光二极管皆适合透明显示，微发光二极管相较于同为自发光显示的有机发光二极管技术，微发光二极管不仅发光效能较高、寿命较长，材料不易受到环境影响而相对稳定，也能避免产生残影现象。\n\n[0005]因为微型发光二极管体积小，可以更密集的设置排列而大幅提高分辨率。然而，也因为有机发光二极管体积小排列更密集，使得传统制程以单面贴印的制造方式应用在微发光二极管制成显示设备则更为困难，贴印转置的过程受限于机构精确度、贴印介质(stamp)的材料特性与单位间距(pitch)的精准度，局限了产品的分辨率，且单面贴印于高密度排列时，放置过程中，容易产生相邻微型发光二极管干扰转置，因而造成误取放。\n\n[0006]在主动矩阵式驱动显示器件(Active matrix，AM microLED)中，由于微发光二极管显示器的尺寸通常为小于100um的尺寸大小；其尺寸超出了传统的抓取吸头的尺寸，无法采用传统的分箱(bin)机台对微发光二极管显示器芯片进行亮度，色度，波长以及电压进行分箱(bin)，导致应用在同一片显示面板上的微发光二极管显示器由于电压，亮度，波长，色度可能具有很大差异，产生亮暗，色偏，色斑等品质问题。\n\n[0007]因此，本发明专利的主要目的在于提供一种微型发光二极管及显示面板，以更优化上述所提之问题。\n\n发明内容\n\n[0008]为了解决上述技术问题，本发明专利的目的在于，提供一种微型发光二极管，包括：一光转换层，用以将蓝光转化为白光；一缓冲层，设置于所述光转换层上；一黑色矩阵，设置于所述光转换层内；一第一半导体层，设置于所述缓冲层上；一氮化铟镓型层，设置于所述第一半导体层上；一第二半导体层，设置于所述氮化铟镓型层上；一电流散布层，设置于所述第二半导体层上，用以加宽发光面积；一钝化层，设置于所述电流散布层上及所述缓冲层上；一第一垫子，设置于所述第二半导体层上及所述电流散布层上，且连接所述钝化层；以及一第二垫子，设置于所述钝化层上。\n\n[0009]本发明专利的目的及解决其技术问题是采用以下技术方案来实现的。\n\n[0010]在本发明专利的一实施例中，所述第一半导体层为N型半导体层，且所述第二半导体层为P型半导体层；所述第一半导体层及所述第二半导体层都含有氮化镓的组成。\n\n[0011]在本发明专利的一实施例中，所述光转换层含有黄色荧光粉或红色与绿色混合的荧光转化材料的组成。\n\n[0012]在本发明专利的一实施例中，所述第一垫子为P型垫子，且所述第二垫子为N型垫子。\n\n[0013]本发明专利的目的及解决其技术问题还可采用以下技术措施进一步实现。\n\n[0014]本发明专利的另一目的为提供一种显示面板，包括：一第一基板；多个像素，设置于所述第一基板上且其中每一所述像素包括至少四个次像素；多个微型发光二极管，设置于所述第一基板上且所述多个微型发光二极管与所述第一基板电性连接，其中每一所述微型发光二极管包括：一光转换层，用以将蓝光转化为白光；一黑色矩阵，设置于所述光转换层内，分别用以使第一次像素、第二次像素、第三次像素及第四次像素分开，避免颜色干扰；一缓冲层，设置于所述光转换层上；一第一半导体层，设置于所述缓冲层上；一氮化铟镓型层，设置于所述第一半导体层上；一第二半导体层，设置于所述氮化铟镓型层上；一电流散布层，设置于所述第二半导体层上，用以加宽发光面积；一钝化层，设置于所述电流散布层上及所述缓冲层上；一第一垫子，设置于所述第二半导体层上及所述电流散布层上，且接合所述钝化层；以及一第二垫子，设置于所述钝化层上；以及一第二基板，电性连接于所述多个微型发光二极管，且所述多个微型发光二极管位于所述第一基板与所述第二基板之间。\n\n[0015]在本发明专利的一实施例中，所述第一半导体层为N型半导体层，且所述第二半导体层为P型半导体层；所述第一半导体层及所述第二半导体层都含有氮化镓的组成。\n\n[0016]在本发明专利的一实施例中，所述光转换层含有黄色荧光粉或红色与绿色混合的荧光转化材料的组成。\n\n[0017]在本发明专利的一实施例中，所述第一垫子为P型垫子，且所述第二垫子为N型垫子。\n\n[0018]在本发明专利的一实施例中，其中至少一所述微型发光二极管位于一所述次像素中。\n\n[0019]在本发明专利的一实施例中，所述第二基板更包括：多条栅极线，设置于所述第二基板上；一栅极覆盖层，设置于所述第二基板上，并覆盖该些栅极线；多条数据线，设置于所述栅极覆盖层上，其中该些数据线与该些栅极线相交的部分设置多个主动开关阵列；一绝缘层，设置于所述数据线上；一外涂层，设置于所述栅极覆盖层上及所述数据线上，且连接所述绝缘层；一阳极电极层，设置于所述外涂层上及所述绝缘层上，并分别连接所述栅极覆盖层及所述数据线；一堤岸层，设置于所述外涂层上，并覆盖所述阳极电极层；以及一阴极电极层，设置于所述堤岸层上。\n\n[0020]本发明专利提供了一种可进行新型的微型发光二极管芯片及其显示面板的全彩化方案，使微型发光二极管芯片既可以采用传统的分箱方式对亮度，色度，波长，电压等光电特性进行分箱，使同一片微型发光二极管显示面板具有稳定的可靠的寿命，均匀的亮度和色度，避免面板显示不均(mura)的产生。\n\n附图说明\n\n[0021]为了更清楚地说明本申请实施例或现有技术中的技术方案，下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本申请的部分实施例，对于本领域普通技术人员而言，在不付出创造性劳动的前提下，还可以根据这些附图获取其他的附图。\n\n[0022]图1为本发明一实施例的微型发光二极管示意图；\n\n[0023]图2为本发明一实施例的微型发光二极管像素阵列示意图；\n\n[0024]图3为本发明一实施例的微型发光二极管像素设计示意图；\n\n[0025]图4为本发明一实施例的具有微型发光二极管的显示器示意图。\n\n具体实施方式\n\n[0026]请参照附图中的图式，其中相同的组件符号代表相同的组件。以下的说明是基于所例示的本申请具体实施例，其不应被视为限制本申请未在此详述的其它具体实施例。\n\n[0027]以下各实施例的说明是参考附加的图式，用以例示本发明专利可用以实施的特定实施例。本发明专利所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明专利，而非用以限制本发明专利。\n\n[0028]在附图中，为了清晰起见，夸大了层、膜、面板、区域等的厚度。在附图中，为了理解和便于描述，夸大了一些层和区域的厚度。将理解的是，当例如层、膜、区域或基底的组件被称作“在”另一组件“上”时，所述组件可以直接在所述另一组件上，或者也可以存在中间组件。\n\n[0029]附图和说明被认为在本质上是示出性的，而不是限制性的。在图中，结构相似的单元是以相同标号表示。另外，为了理解和便于描述，附图中示出的每个组件的尺寸和厚度是任意示出的，但是本发明专利不限于此。\n\n[0030]另外，在说明书中，除非明确地描述为相反的，否则词语“包括”将被理解为意指包括所述组件，但是不排除任何其它组件。此外，在说明书中，“在......上”意指位于目标组件上方或者下方，而不意指必须位于基于重力方向的顶部上。\n\n[0031]为更进一步阐述本发明专利为达成预定发明目的所采取的技术手段及功效，以下结合附图及具体的实施例，对依据本发明专利提出的微型发光二极管及显示面板，其具体实施方式、结构、特征及其功效，详细说明如后。\n\n[0032]图1为本发明一实施例的微型发光二极管示意图、图2为本发明一实施例的微型发光二极管像素阵列示意图及图3为本发明一实施例的微型发光二极管像素设计示意图，请参考图1、图2及图3，在本发明专利的一实施例中，一种微型发光二极管101，包括：一光转换层120，用以将蓝光转化为白光；一黑色矩阵110，设置于所述光转换层120内；一缓冲层130，设置于所述光转换层120上；一第一半导体层140，设置于所述缓冲层130上；一氮化铟镓型层150，设置于所述第一半导体层140上；一第二半导体层160，设置于所述氮化铟镓型层150上；一电流散布层170，设置于所述第二半导体层160上，用以加宽发光面积；一钝化层180，设置于所述电流散布层170上及所述缓冲层130上；一第一垫子190，设置于所述第二半导体层160上及所述电流散布层170上，且连接所述钝化层180；以及一第二垫子195，设置于所述钝化层180上。\n\n[0033]在本发明专利的一实施例中，所述第一半导体层140为N型半导体层，且所述第二半导体层160为P型半导体层；所述第一半导体层140及所述第二半导体层160都含有氮化镓的组成。\n\n[0034]在本发明专利的一实施例中，所述光转换层120含有黄色荧光粉或红色与绿色混合的荧光转化材料的组成，如：氮化物荧光(Nitride)、硫化物荧光粉(sulfide)、氟化物荧光粉(fluoride)、量子点(quantum dots)等材料。\n\n[0035]在本发明专利的一实施例中，所述第一垫子190为P型垫子，且所述第二垫子195为N型垫子。\n\n[0036]请参考图2及图3，在本发明专利的一实施例中，每一微型发光二极管101组对应两行第一次像素100R(举例:红色次像素)、第二次像素100G(举例:绿色次像素)、第三次像素100B(举例:蓝色次像素)、第四次像素100W(举例:白色次像素)(共8个次像素)。\n\n[0037]请参考图2及图3，在本发明专利的一实施例中，微型发光二极管101组上的每一个微型发光二极管101对应一个次像素(举例:第一次像素100R、第二次像素100G、第三次像素100B、第四次像素100W)；其次像素(举例:第一次像素100R、第二次像素100G、第三次像素100B、第四次像素100W)为两组红色、绿色、蓝色、白色次像素。\n\n[0038]图4为本发明一实施例的具有微型发光二极管的显示器示意图。请参考图1、图2、图3及图4，在本发明专利的一实施例中，一种显示面板300，包括：一第一基板10；多个像素100，设置于所述第一基板10上且其中每一所述像素100包括至少四个次像素100R、100G、100B、100W；多个微型发光二极管101，设置于所述第一基板10上且所述多个微型发光二极管101与所述第一基板10电性连接，其中每一所述微型发光二极管101包括：一光转换层120，用以将蓝光转化为白光；一黑色矩阵110，设置于所述光转换层120内，分别用以使第一次像素100R、第二次像素100G、第三次像素100B及第四次像素100W分开，避免颜色干扰；一缓冲层130，设置于所述光转换层120上；一第一半导体层140，设置于所述缓冲层130上；一氮化铟镓型层150，设置于所述第一半导体层140上；一第二半导体层160，设置于所述氮化铟镓型层150上；一电流散布层170，设置于所述第二半导体层160上，用以加宽发光面积；一钝化层180，设置于所述电流散布层170上及所述缓冲层130上；一第一垫子190，设置于所述第二半导体层160上及所述电流散布层170上，且连接所述钝化层180；以及一第二垫子195，设置于所述钝化层180上；以及一第二基板20，电性连接于所述多个微型发光二极管101，且所述多个微型发光二极管101位于所述第一基板10与所述第二基板20之间。\n\n[0039]在本发明专利的一实施例中，所述第一半导体层140为N型半导体层，且所述第二半导体层160为P型半导体层；所述第一半导体层140及所述第二半导体层160都含有氮化镓的组成。\n\n[0040]在本发明专利的一实施例中，所述光转换层120含有黄色荧光粉或红色与绿色混合的荧光转化材料的组成，如：氮化物荧光(Nitride)、硫化物荧光粉(sulfide)、氟化物荧光粉(fluoride)、量子点(quantum dots)等材料。\n\n[0041]在本发明专利的一实施例中，所述第一垫子190为P型垫子，且所述第二垫子195为N型垫子。\n\n[0042]在本发明专利的一实施例中，其中至少一所述微型发光二极管101位于一所述次像素100R、100G、100B、100W中。\n\n[0043]请参考图4，在本发明专利的一实施例中，所述第二基板20更包括：多条栅极线210，设置于所述第二基板20上；一栅极覆盖层220，设置于所述第二基板20上，并覆盖该些栅极线210；多条数据线230，设置于所述栅极覆盖层220上，其中该些数据线230与该些栅极线210相交的部分设置多个主动开关阵列235；一绝缘层240，设置于所述数据线230上；一外涂层250，设置于所述栅极覆盖层220上及所述数据线230上，且连接所述绝缘层240；一阳极电极层260，设置于所述外涂层250上及所述绝缘层240上，并分别连接所述栅极覆盖层220及所述数据线230；一堤岸层270，设置于所述外涂层250上，并覆盖所述阳极电极层260；以及一阴极电极层280，设置于所述堤岸层270上。\n\n[0044]请参考图2及图3，在本发明专利的一实施例中，在本发明专利的一实施例中，每一微型发光二极管101组对应两行第一次像素100R(举例:红色次像素)、第二次像素100G(举例:绿色次像素)、第三次像素100B(举例:蓝色次像素)、第四次像素100W(举例:白色次像素)(共8个次像素)。\n\n[0045]请参考图2及图3，在本发明专利的一实施例中，在本发明专利的一实施例中，微型发光二极管101组上的每一个微型发光二极管101对应一个次像素(举例:第一次像素100R、第二次像素100G、第三次像素100B、第四次像素100W)；其次像素(举例:第一次像素100R、第二次像素100G、第三次像素100B、第四次像素100W)为两组红色、绿色、蓝色、白色次像素。\n\n[0046]请参考图4，在本发明专利的一实施例中，所述第二基板20具体化为薄膜晶体管(Thin Film Transistor,TFT)基板。在其他的实施例中，所述第二基板20可以是半导体(Semiconductor)基板、次黏着基台(Submount)、互补式金属氧化物半导体(ComplementaryMetal-Oxide-Semiconductor,CMOS)电路基板、硅基液晶(Liquid Crystal on Silicon,LCOS)基板或者是其他具有驱动单元的基板，本发明并不以此为限制。\n\n[0047]本发明专利提供了一种可进行新型的微型发光二极管芯片及其显示面板的全彩化方案，使微型发光二极管芯片既可以采用传统的分箱方式对亮度，色度，波长，电压等光电特性进行分箱，使同一片微型发光二极管显示面板具有稳定的可靠的寿命，均匀的亮度和色度，避免面板显示不均(mura)的产生。\n\n[0048]“在一些实施例中”及“在各种实施例中”等用语被重复地使用。所述用语通常不是指相同的实施例；但它也可以是指相同的实施例。“包含”、“具有”及“包括”等用词是同义词，除非其前后文意显示出其它意思。\n\n[0049]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。', '技术领域\n\n[0001]本申请涉及显示领域，特别是涉及一种微型发光二极管及显示面板。\n\n背景技术\n\n[0002]现今显示器为了追求自发光以增加对比对并朝着可挠性显示器发展，因此由液晶显示器(liquid-crystal display，缩写：LCD)朝有机电激发光显示器(OrganicElectroluminescence Display，缩写：OELD)发展，OLED的优点即为可自发光达成显示的需求，不需要液晶并且可以制作柔性、可挠性显示器，在现阶段的发展里相当的热门。但是OLED显示器的缺点为制程难度高，且蒸镀制程、封装制程尚未达到最佳化，随之而来的是制程良率低、生产成本增加。\n\n[0003]目前业界利用微发光二极管显示器(Micro Light Emitting Diode Display，缩写为Micro LED)试图取代OLED，其主要的优点为制程成熟、耗电量低、可以达到高对比的需求。\n\n[0004]而微发光二极管为微型化发光二极管的阵列结构，具有自发光显示特性，搭配主动式组件每一点画素都能单独驱动发光，优点包括高亮度、低功耗、体积较小、超高分辨率与色彩饱和等。微发光二极管与有机发光二极管皆适合透明显示，微发光二极管相较于同为自发光显示的有机发光二极管技术，微发光二极管不仅发光效能较高、寿命较长，材料不易受到环境影响而相对稳定，也能避免产生残影现象。\n\n[0005]因为微型发光二极管体积小，可以更密集的设置排列而大幅提高分辨率。然而，也因为有机发光二极管体积小排列更密集，使得传统制程以单面贴印的制造方式应用在微发光二极管制成显示设备则更为困难，贴印转置的过程受限于机构精确度、贴印介质(stamp)的材料特性与单位间距(pitch)的精准度，局限了产品的分辨率，且单面贴印于高密度排列时，放置过程中，容易产生相邻微型发光二极管干扰转置，因而造成误取放。\n\n[0006]在主动矩阵式驱动显示器件(Active matrix，AM microLED)中，由于微发光二极管显示器的尺寸通常为小于100um的尺寸大小；其尺寸超出了传统的抓取吸头的尺寸，无法采用传统的分箱(bin)机台对微发光二极管显示器芯片进行亮度，色度，波长以及电压进行分箱(bin)，导致应用在同一片显示面板上的微发光二极管显示器由于电压，亮度，波长，色度可能具有很大差异，产生亮暗，色偏，色斑等品质问题。\n\n[0007]因此，本发明专利的主要目的在于提供一种微型发光二极管及显示面板，以更优化上述所提之问题。\n\n发明内容\n\n[0008]为了解决上述技术问题，本发明专利的目的在于，提供一种微型发光二极管，包括：一光转换层，用以将蓝光转化为白光；一缓冲层，设置于所述光转换层上；一黑色矩阵，设置于所述光转换层内；一第一半导体层，设置于所述缓冲层上；一氮化铟镓型层，设置于所述第一半导体层上；一第二半导体层，设置于所述氮化铟镓型层上；一电流散布层，设置于所述第二半导体层上，用以加宽发光面积；一钝化层，设置于所述电流散布层上及所述缓冲层上；一第一垫子，设置于所述第二半导体层上及所述电流散布层上，且连接所述钝化层；以及一第二垫子，设置于所述钝化层上。\n\n[0009]本发明专利的目的及解决其技术问题是采用以下技术方案来实现的。\n\n[0010]在本发明专利的一实施例中，所述第一半导体层为N型半导体层，且所述第二半导体层为P型半导体层；所述第一半导体层及所述第二半导体层都含有氮化镓的组成。\n\n[0011]在本发明专利的一实施例中，所述光转换层含有黄色荧光粉或红色与绿色混合的荧光转化材料的组成。\n\n[0012]在本发明专利的一实施例中，所述第一垫子为P型垫子，且所述第二垫子为N型垫子。\n\n[0013]本发明专利的目的及解决其技术问题还可采用以下技术措施进一步实现。\n\n[0014]本发明专利的另一目的为提供一种显示面板，包括：一第一基板；多个像素，设置于所述第一基板上且其中每一所述像素包括至少四个次像素；多个微型发光二极管，设置于所述第一基板上且所述多个微型发光二极管与所述第一基板电性连接，其中每一所述微型发光二极管包括：一光转换层，用以将蓝光转化为白光；一黑色矩阵，设置于所述光转换层内，分别用以使第一次像素、第二次像素、第三次像素及第四次像素分开，避免颜色干扰；一缓冲层，设置于所述光转换层上；一第一半导体层，设置于所述缓冲层上；一氮化铟镓型层，设置于所述第一半导体层上；一第二半导体层，设置于所述氮化铟镓型层上；一电流散布层，设置于所述第二半导体层上，用以加宽发光面积；一钝化层，设置于所述电流散布层上及所述缓冲层上；一第一垫子，设置于所述第二半导体层上及所述电流散布层上，且接合所述钝化层；以及一第二垫子，设置于所述钝化层上；以及一第二基板，电性连接于所述多个微型发光二极管，且所述多个微型发光二极管位于所述第一基板与所述第二基板之间。\n\n[0015]在本发明专利的一实施例中，所述第一半导体层为N型半导体层，且所述第二半导体层为P型半导体层；所述第一半导体层及所述第二半导体层都含有氮化镓的组成。\n\n[0016]在本发明专利的一实施例中，所述光转换层含有黄色荧光粉或红色与绿色混合的荧光转化材料的组成。\n\n[0017]在本发明专利的一实施例中，所述第一垫子为P型垫子，且所述第二垫子为N型垫子。\n\n[0018]在本发明专利的一实施例中，其中至少一所述微型发光二极管位于一所述次像素中。\n\n[0019]在本发明专利的一实施例中，所述第二基板更包括：多条栅极线，设置于所述第二基板上；一栅极覆盖层，设置于所述第二基板上，并覆盖该些栅极线；多条数据线，设置于所述栅极覆盖层上，其中该些数据线与该些栅极线相交的部分设置多个主动开关阵列；一绝缘层，设置于所述数据线上；一外涂层，设置于所述栅极覆盖层上及所述数据线上，且连接所述绝缘层；一阳极电极层，设置于所述外涂层上及所述绝缘层上，并分别连接所述栅极覆盖层及所述数据线；一堤岸层，设置于所述外涂层上，并覆盖所述阳极电极层；以及一阴极电极层，设置于所述堤岸层上。\n\n[0020]本发明专利提供了一种可进行新型的微型发光二极管芯片及其显示面板的全彩化方案，使微型发光二极管芯片既可以采用传统的分箱方式对亮度，色度，波长，电压等光电特性进行分箱，使同一片微型发光二极管显示面板具有稳定的可靠的寿命，均匀的亮度和色度，避免面板显示不均(mura)的产生。\n\n附图说明\n\n[0021]为了更清楚地说明本申请实施例或现有技术中的技术方案，下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本申请的部分实施例，对于本领域普通技术人员而言，在不付出创造性劳动的前提下，还可以根据这些附图获取其他的附图。\n\n[0022]图1为本发明一实施例的微型发光二极管示意图；\n\n[0023]图2为本发明一实施例的微型发光二极管像素阵列示意图；\n\n[0024]图3为本发明一实施例的微型发光二极管像素设计示意图；\n\n[0025]图4为本发明一实施例的具有微型发光二极管的显示器示意图。\n\n具体实施方式\n\n[0026]请参照附图中的图式，其中相同的组件符号代表相同的组件。以下的说明是基于所例示的本申请具体实施例，其不应被视为限制本申请未在此详述的其它具体实施例。\n\n[0027]以下各实施例的说明是参考附加的图式，用以例示本发明专利可用以实施的特定实施例。本发明专利所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明专利，而非用以限制本发明专利。\n\n[0028]在附图中，为了清晰起见，夸大了层、膜、面板、区域等的厚度。在附图中，为了理解和便于描述，夸大了一些层和区域的厚度。将理解的是，当例如层、膜、区域或基底的组件被称作“在”另一组件“上”时，所述组件可以直接在所述另一组件上，或者也可以存在中间组件。\n\n[0029]附图和说明被认为在本质上是示出性的，而不是限制性的。在图中，结构相似的单元是以相同标号表示。另外，为了理解和便于描述，附图中示出的每个组件的尺寸和厚度是任意示出的，但是本发明专利不限于此。\n\n[0030]另外，在说明书中，除非明确地描述为相反的，否则词语“包括”将被理解为意指包括所述组件，但是不排除任何其它组件。此外，在说明书中，“在......上”意指位于目标组件上方或者下方，而不意指必须位于基于重力方向的顶部上。\n\n[0031]为更进一步阐述本发明专利为达成预定发明目的所采取的技术手段及功效，以下结合附图及具体的实施例，对依据本发明专利提出的微型发光二极管及显示面板，其具体实施方式、结构、特征及其功效，详细说明如后。\n\n[0032]图1为本发明一实施例的微型发光二极管示意图、图2为本发明一实施例的微型发光二极管像素阵列示意图及图3为本发明一实施例的微型发光二极管像素设计示意图，请参考图1、图2及图3，在本发明专利的一实施例中，一种微型发光二极管101，包括：一光转换层120，用以将蓝光转化为白光；一黑色矩阵110，设置于所述光转换层120内；一缓冲层130，设置于所述光转换层120上；一第一半导体层140，设置于所述缓冲层130上；一氮化铟镓型层150，设置于所述第一半导体层140上；一第二半导体层160，设置于所述氮化铟镓型层150上；一电流散布层170，设置于所述第二半导体层160上，用以加宽发光面积；一钝化层180，设置于所述电流散布层170上及所述缓冲层130上；一第一垫子190，设置于所述第二半导体层160上及所述电流散布层170上，且连接所述钝化层180；以及一第二垫子195，设置于所述钝化层180上。\n\n[0033]在本发明专利的一实施例中，所述第一半导体层140为N型半导体层，且所述第二半导体层160为P型半导体层；所述第一半导体层140及所述第二半导体层160都含有氮化镓的组成。\n\n[0034]在本发明专利的一实施例中，所述光转换层120含有黄色荧光粉或红色与绿色混合的荧光转化材料的组成，如：氮化物荧光(Nitride)、硫化物荧光粉(sulfide)、氟化物荧光粉(fluoride)、量子点(quantum dots)等材料。\n\n[0035]在本发明专利的一实施例中，所述第一垫子190为P型垫子，且所述第二垫子195为N型垫子。\n\n[0036]请参考图2及图3，在本发明专利的一实施例中，每一微型发光二极管101组对应两行第一次像素100R(举例:红色次像素)、第二次像素100G(举例:绿色次像素)、第三次像素100B(举例:蓝色次像素)、第四次像素100W(举例:白色次像素)(共8个次像素)。\n\n[0037]请参考图2及图3，在本发明专利的一实施例中，微型发光二极管101组上的每一个微型发光二极管101对应一个次像素(举例:第一次像素100R、第二次像素100G、第三次像素100B、第四次像素100W)；其次像素(举例:第一次像素100R、第二次像素100G、第三次像素100B、第四次像素100W)为两组红色、绿色、蓝色、白色次像素。\n\n[0038]图4为本发明一实施例的具有微型发光二极管的显示器示意图。请参考图1、图2、图3及图4，在本发明专利的一实施例中，一种显示面板300，包括：一第一基板10；多个像素100，设置于所述第一基板10上且其中每一所述像素100包括至少四个次像素100R、100G、100B、100W；多个微型发光二极管101，设置于所述第一基板10上且所述多个微型发光二极管101与所述第一基板10电性连接，其中每一所述微型发光二极管101包括：一光转换层120，用以将蓝光转化为白光；一黑色矩阵110，设置于所述光转换层120内，分别用以使第一次像素100R、第二次像素100G、第三次像素100B及第四次像素100W分开，避免颜色干扰；一缓冲层130，设置于所述光转换层120上；一第一半导体层140，设置于所述缓冲层130上；一氮化铟镓型层150，设置于所述第一半导体层140上；一第二半导体层160，设置于所述氮化铟镓型层150上；一电流散布层170，设置于所述第二半导体层160上，用以加宽发光面积；一钝化层180，设置于所述电流散布层170上及所述缓冲层130上；一第一垫子190，设置于所述第二半导体层160上及所述电流散布层170上，且连接所述钝化层180；以及一第二垫子195，设置于所述钝化层180上；以及一第二基板20，电性连接于所述多个微型发光二极管101，且所述多个微型发光二极管101位于所述第一基板10与所述第二基板20之间。\n\n[0039]在本发明专利的一实施例中，所述第一半导体层140为N型半导体层，且所述第二半导体层160为P型半导体层；所述第一半导体层140及所述第二半导体层160都含有氮化镓的组成。\n\n[0040]在本发明专利的一实施例中，所述光转换层120含有黄色荧光粉或红色与绿色混合的荧光转化材料的组成，如：氮化物荧光(Nitride)、硫化物荧光粉(sulfide)、氟化物荧光粉(fluoride)、量子点(quantum dots)等材料。\n\n[0041]在本发明专利的一实施例中，所述第一垫子190为P型垫子，且所述第二垫子195为N型垫子。\n\n[0042]在本发明专利的一实施例中，其中至少一所述微型发光二极管101位于一所述次像素100R、100G、100B、100W中。\n\n[0043]请参考图4，在本发明专利的一实施例中，所述第二基板20更包括：多条栅极线210，设置于所述第二基板20上；一栅极覆盖层220，设置于所述第二基板20上，并覆盖该些栅极线210；多条数据线230，设置于所述栅极覆盖层220上，其中该些数据线230与该些栅极线210相交的部分设置多个主动开关阵列235；一绝缘层240，设置于所述数据线230上；一外涂层250，设置于所述栅极覆盖层220上及所述数据线230上，且连接所述绝缘层240；一阳极电极层260，设置于所述外涂层250上及所述绝缘层240上，并分别连接所述栅极覆盖层220及所述数据线230；一堤岸层270，设置于所述外涂层250上，并覆盖所述阳极电极层260；以及一阴极电极层280，设置于所述堤岸层270上。\n\n[0044]请参考图2及图3，在本发明专利的一实施例中，在本发明专利的一实施例中，每一微型发光二极管101组对应两行第一次像素100R(举例:红色次像素)、第二次像素100G(举例:绿色次像素)、第三次像素100B(举例:蓝色次像素)、第四次像素100W(举例:白色次像素)(共8个次像素)。\n\n[0045]请参考图2及图3，在本发明专利的一实施例中，在本发明专利的一实施例中，微型发光二极管101组上的每一个微型发光二极管101对应一个次像素(举例:第一次像素100R、第二次像素100G、第三次像素100B、第四次像素100W)；其次像素(举例:第一次像素100R、第二次像素100G、第三次像素100B、第四次像素100W)为两组红色、绿色、蓝色、白色次像素。\n\n[0046]请参考图4，在本发明专利的一实施例中，所述第二基板20具体化为薄膜晶体管(Thin Film Transistor,TFT)基板。在其他的实施例中，所述第二基板20可以是半导体(Semiconductor)基板、次黏着基台(Submount)、互补式金属氧化物半导体(ComplementaryMetal-Oxide-Semiconductor,CMOS)电路基板、硅基液晶(Liquid Crystal on Silicon,LCOS)基板或者是其他具有驱动单元的基板，本发明并不以此为限制。\n\n[0047]本发明专利提供了一种可进行新型的微型发光二极管芯片及其显示面板的全彩化方案，使微型发光二极管芯片既可以采用传统的分箱方式对亮度，色度，波长，电压等光电特性进行分箱，使同一片微型发光二极管显示面板具有稳定的可靠的寿命，均匀的亮度和色度，避免面板显示不均(mura)的产生。\n\n[0048]“在一些实施例中”及“在各种实施例中”等用语被重复地使用。所述用语通常不是指相同的实施例；但它也可以是指相同的实施例。“包含”、“具有”及“包括”等用词是同义词，除非其前后文意显示出其它意思。\n\n[0049]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10676, 23730, '【技术领域】\n\n[0001]本揭示涉及液晶显示设备的技术领域，特别涉及一种用于屏下辨识方案的液晶显示设备。\n\n【背景技术】\n\n[0002]在中小尺寸显示领域，全面屏技术成为当前的重点研发方向，换言之，如何通过相关技术的开发实现人机交互界面的屏占比最大化，乃是当前的研发重点。\n\n[0003]第一代全面屏技术主要集中于屏幕尺寸比例由16:9变化为18+：9，第二代全面屏则是进一步地压缩屏幕上下左右的边界，甚至采用柔性折叠技术最大化可视面积，而近期全面屏的另一个动向则是如何将显示终端的指纹识别、摄像头、面部识别、距离传感等传感器进一步地融合进显示屏的可操作区(Active Area；AA区)，使得显示屏从单纯的显示界面逐渐过渡到全面的感知、交互界面。\n\n[0004]目前主流的显示技术包括LCD(liquid crystal display，液晶显示器)和OLED(organic light-emitting diode，有机发光二极管)，其中LCD为被动发光技术，通过整面背光结构照射液晶盒实现光线的亮暗控制；而OLED技术则是采用逐颗的OLED像素主动发光，因此相较而言具有高对比、轻薄、可弯曲、可折叠等优势。\n\n[0005]另一方面，基于OLED无背光的特性，可以很好的与现行的光学指纹识别模组兼容，因而面内光学指纹识别成为目前OLED的独有优势，同时业界也在开发基于OLED的屏下摄像头方案，从而可以进一步在显示模式和成像模式之间切换，并且因此具有无需现行LCD挖孔方案所造成的挖孔区无法显示的优势。\n\n[0006]最新一代的微发光二极管(Micro LED)显示技术，其相较于OLED技术具有相似的主动发光特性，同时由于无机LED本身的稳定性与高效率等特点，在技术上较OLED具有寿命长、亮度高、控制芯片(chip)尺寸小、响应时间长等优势，目前已经成为显示业界的重点开发方向之一。但是相较于传统面板技术乃是通过刻蚀等“减法制造”的方式，微发光二极管主要依赖于巨量转移(mass-transfer)的“加法制造”方式，在技术成熟度上较低，特别是面临巨量显示画素转移时具有先天的制程良率与成本挑战，因而在短期内仍然难以成为真正成熟的显示技术。\n\n[0007]显然综上三种显示技术，OLED具有明显的全面屏技术优势，LCD低成本的优势在基于屏下传感的下一代全面屏技术需求上显得岌岌可危，而次世代的微发光二极管技术虽于全面屏技术的要求上具有巨大的优势，但是制程上仍面临着巨量转移良率及成本偏高的问题，因而如何在现有的LCD技术上实现较OLED更优方案成为业界探索的一个重要方向。\n\n【发明内容】\n\n[0008]为解决上述技术问题，本揭示的一目的在于提供一种用于屏下辨识方案的液晶显示设备，其能够通过在液晶显示面板下的屏下传感器的位置处采用彩色滤光片分路(CF-bypass)及无像素电路的方式实现透明显示，并且在处堆叠方向上采用基于透明基板的小面积微发光二极管模块进行显示。所述微发光二极管模块采用RGB三色显示，且各个子像素芯片(chip)覆盖大小小于子像素(subpixel)大小，在子像素内部无芯片的区域，光线可以正常通过，因而在子像素打开时，所述微发光二极管模块的微发光二极管可操作区可以实现正常显示，同时在任意时刻可以透过子像素的关闭，使所述微发光二极管模块的所述微发光二极管可操作区采集外界图像进入屏下传感器，如此一来，便可以实现屏下指纹识别、屏下摄像头、屏下面部识别、屏下距离感知等各种屏下传感方案。此外，所述微发光二极管模块的所述微发光二极管可操作区与液晶模块的液晶模块可操作区无缝衔接，因而在视觉上没有任何显示中断及不连续边界(如凹口、挖孔等)，可以实现完全的全面屏设计。又，由于微发光二极管具有高亮、长寿命特征，故可以采用微发光二极管的部分子像素兼做补光灯、指示灯等功能。\n\n[0009]为达成上述目的，本揭示提供一种用于屏下辨识方案的液晶显示设备。所述液晶显示设备包括：液晶模块、背光模块、屏下传感器及微发光二极管(Micro LED)模块。所述液晶模块包括阵列玻璃，以及依序设置于所述阵列玻璃上方的液晶层、彩色滤光片与偏光片，所述液晶模块定义液晶模块可操作区与临接于所述液晶模块可操作区的挖孔区。所述背光模块设置于所述液晶模块下方并朝向所述液晶模块发光。所述屏下传感器相对于所述液晶模块的所述挖孔区，设置于所述背光模块内。所述微发光二极管模块设置于所述液晶模块所定义的所述挖孔区内。其中，所述微发光二极管模块定义微发光二极管可操作区，且所述微发光二极管可操作区临接于所述液晶模块可操作区。\n\n[0010]于本揭示其中的一实施例中，所述微发光二极管模块具有透明基板及设置于所述透明基板上的复数子像素(subpixel)与复数芯片。\n\n[0011]于本揭示其中的一实施例中，所述微发光二极管模块的所述芯片的大小为1-500μm，所述微发光二极管模块的所述子像素的大小为10-1000μm。\n\n[0012]于本揭示其中的一实施例中，各所述芯片的覆盖大小小于各所述子像素的大小。\n\n[0013]于本揭示其中的一实施例中，所述屏下传感器包括指纹识别、摄像头、结构光传感器、飞行时间测距(Time of Flight，TOF)传感器、距离传感器、及光线传感器。\n\n[0014]于本揭示其中的一实施例中，所述微发光二极管模块采用RGB三色显示。\n\n[0015]于本揭示其中的一实施例中，所述微发光二极管可操作区设置于所述液晶模块的挖孔、水滴、凹口(notch)、及面外等位置。\n\n[0016]于本揭示其中的一实施例中，所述微发光二极管可操作区的面积小于10*10mm。\n\n[0017]于本揭示其中的一实施例中，所述微发光二极管模块的基板采用无源选址驱动(PM：Passive Matrix)方式或有源选址驱动(AM：Active Matrix)方式进行驱动。\n\n[0018]于本揭示其中的一实施例中，所述微发光二极管模块在纵向堆叠上采用内藏式(in-cell)、表面嵌入式(on-cell)、或外挂式(add-on)等结构。\n\n[0019]为让本揭示的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下。\n\n【附图说明】\n\n[0020]图1(a)-图1(e)显示根据本揭示的用于屏下辨识方案的液晶显示设备所具有的微发光二极管的可操作区的设置位置示意图；\n\n[0021]图2显示根据本揭示的用于屏下辨识方案的液晶显示设备的第一实施例示意图；\n\n[0022]图3显示根据本揭示的用于屏下辨识方案的液晶显示设备的第二实施例示意图；\n\n[0023]图4显示根据本揭示的用于屏下辨识方案的液晶显示设备的第三实施例示意图；以及\n\n[0024]图5显示根据本揭示的用于屏下辨识方案的液晶显示设备所具有的微发光二极管模块的示意图。\n\n【具体实施方式】\n\n[0025]为了让本揭示的上述及其他目的、特征、优点能更明显易懂，下文将特举本揭示优选实施例，并配合所附图式，作详细说明如下。再者，本揭示所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧层、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。\n\n[0026]在图中，结构相似的单元是以相同标号表示。\n\n[0027]如图1-图5所示，本揭示的一目的在于提供一种用于屏下辨识方案的液晶显示设备100，其能够通过在液晶显示面板下的屏下传感器的位置处采用彩色滤光片分路(CF-bypass)及无像素电路的方式实现透明显示，并且在处堆叠方向上采用基于透明基板的小面积微发光二极管(Micro LED)模块140进行显示。\n\n[0028]请先参阅图5，所述微发光二极管模块140采用红蓝绿(RGB)三色显示，且各个子像素芯片(chip)144覆盖大小小于子像素(subpixel)143的大小，在子像素143内部无芯片144的区域，光线可以正常通过，因而如图2-4所示，在子像素143打开时，所述微发光二极管模块140的微发光二极管可操作区141可以实现正常显示，同时在任意时刻可以透过子像素143的关闭，使所述微发光二极管模块140的所述微发光二极管可操作区141采集外界图像进入屏下传感器，如此一来，便可以实现屏下指纹识别、屏下摄像头、屏下面部识别、屏下距离感知等各种屏下传感方案。\n\n[0029]请再次参阅图1(a)-1(e)，于本揭示中，所述微发光二极管模块140的所述微发光二极管可操作区141与液晶模块110的液晶模块可操作区115无缝衔接，因而在视觉上没有任何显示中断及不连续边界(如凹口、挖孔等)，可以实现完全的全面屏设计。又，由于微发光二极管具有高亮、长寿命特征，故可以采用微发光二极管的部分子像素143兼做补光灯、指示灯等功能。\n\n[0030]详细而言，如图2的用于屏下辨识方案的液晶显示设备100的第一实施例示意图所示，本揭示提供一种用于屏下辨识方案的液晶显示设备100。所述液晶显示设备100包括：液晶模块110、背光模块120、屏下传感器130及微发光二极管模块140。\n\n[0031]所述液晶模块110包括阵列玻璃111，以及依序设置于所述阵列玻璃111上方的液晶层112、彩色滤光片113与偏光片114，所述液晶模块110定义液晶模块可操作区115与临接于所述液晶模块可操作区115的挖孔区116。\n\n[0032]所述背光模块120设置于所述液晶模块110下方并朝向所述液晶模块110发光。所述屏下传感器130相对于所述液晶模块110的所述挖孔区116且设置于所述背光模块120内。\n\n[0033]所述微发光二极管模块140设置于所述液晶模块110所定义的所述挖孔区116内，且详细而言，所述微发光二极管模块140乃是以内藏式(in-cell)的方式设置于所述液晶模块110内。\n\n[0034]如图2所示，所述微发光二极管模块140定义微发光二极管可操作区141，且所述微发光二极管可操作区141以无缝衔接的方式临接于所述液晶模块可操作区115，因而在视觉上没有任何显示中断及不连续边界。\n\n[0035]如图5所示，于本揭示中，所述微发光二极管模块140具有透明基板142及设置于所述透明基板142上的复数子像素143与复数芯片144。所述微发光二极管模块140的所述芯片144的大小为1-500微米(μm)，所述微发光二极管模块140的所述子像素143的大小为10-1000μm。此外，各所述芯片144的覆盖大小皆小于各所述子像素143的大小。因此，在所述子像素143内部无所述芯片144的区域，光线可以正常通过，因而在所述子像素143打开时，所述微发光二极管模块140的微发光二极管可操作区141可以实现正常显示，同时在任意时刻可以透过对所述子像素143的关闭，使所述微发光二极管模块140的所述微发光二极管可操作区141采集外界图像进入所述屏下传感器130。如此一来，便可以实现屏下指纹识别、屏下摄像头、屏下面部识别、屏下距离感知等各种屏下传感方案。\n\n[0036]于图3所绘示的第二实施例中，乃是将所述微发光二极管模块140以表面嵌入式(on-cell)的方式设置于所述液晶模块110内，除此之外，其他组件间的相互空间关系皆相同于图2所示的第一实施例，故所述微发光二极管可操作区141同样能够以无缝衔接的方式临接于所述液晶模块可操作区115，因而在视觉上没有任何显示中断及不连续边界。\n\n[0037]于图4所绘示的第三实施例中，乃是将所述微发光二极管模块140以外挂式(add-on)的方式设置于所述液晶模块110内，除此之外，其他组件间的相互空间关系皆相同于图2所示的第一实施例，故所述微发光二极管可操作区141同样能够以无缝衔接的方式临接于所述液晶模块可操作区115，因而在视觉上没有任何显示中断及不连续边界。\n\n[0038]于本揭示中，所述屏下传感器130包括指纹识别、摄像头、结构光传感器、飞行时间测距传感器、距离传感器、及光线传感器等屏下传感器。\n\n[0039]于本揭示中，所述微发光二极管模块140采用RGB三色显示，但并不以此作为限制。\n\n[0040]如图1(a)-图1(e)所示，于本揭示中，所述微发光二极管可操作区141可分别设置于所述液晶模块110的挖孔(如图1(a)、1(d))、水滴(如图1(b))、凹口(如图1(c))、及面外(如图1(e))等位置，且所述微发光二极管模块140的所述微发光二极管可操作区141与所述液晶模块110的液晶模块可操作区115无缝衔接，因而在视觉上没有任何显示中断及不连续边界，藉此实现完全的全面屏设计。\n\n[0041]于本揭示的实施例中，所述微发光二极管可操作区141的面积小于10*10毫米(mm)，因为前述面积所需求的子像素数目较少，从而可以保证该区域的转印良率与并进行成本控制。\n\n[0042]于本揭示的实施例中，所述微发光二极管模块140的基板采用无源选址驱动(PM：Passive Matrix)方式或有源选址驱动(AM：Active Matrix)方式进行驱动。\n\n[0043]综上所述，由于本揭示所提供的一种用于屏下辨识方案的液晶显示设备100所具有的所述微发光二极管模块140采用RGB三色显示，且各个所述子像素芯片144的覆盖大小皆小于所述子像素143的大小，使得在所述子像素143内部无所述芯片144的区域，光线可以正常通过，因而在所述子像素143打开时，所述微发光二极管模块140的微发光二极管可操作区141可以实现正常显示，同时在任意时刻可以透过所述子像素143的关闭，使所述微发光二极管模块140的所述微发光二极管可操作区141采集外界图像进入屏下传感器，如此一来，便可以简单地实现屏下指纹识别、屏下摄像头、屏下面部识别、屏下距离感知等各种屏下传感方案，避免采用OLED的高额制造成本。\n\n[0044]尽管已经相对于一个或多个实现方式示出并描述了本揭示，但是本领域技术人员基于对本说明书和附图的阅读和理解将会想到等价变型和修改。本揭示包括所有这样的修改和变型，并且仅由所附权利要求的范围限制。特别地关于由上述组件执行的各种功能，用于描述这样的组件的术语旨在对应于执行所述组件的指定功能(例如其在功能上是等价的)的任意组件(除非另外指示)，即使在结构上与执行本文所示的本说明书的示范性实现方式中的功能的公开结构不等同。此外，尽管本说明书的特定特征已经相对于若干实现方式中的仅一个被公开，但是这种特征可以与如可以对给定或特定应用而言是期望和有利的其他实现方式的一个或多个其他特征组合。而且，就术语“包括”、“具有”、“含有”或其变形被用在具体实施方式或权利要求中而言，这样的术语旨在以与术语“包含”相似的方式包括。\n\n[0045]以上仅是本揭示的优选实施方式，应当指出，对于本领域普通技术人员，在不脱离本揭示原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本揭示的保护范围。', '【技术领域】\n\n[0001]本揭示涉及液晶显示设备的技术领域，特别涉及一种用于屏下辨识方案的液晶显示设备。\n\n【背景技术】\n\n[0002]在中小尺寸显示领域，全面屏技术成为当前的重点研发方向，换言之，如何通过相关技术的开发实现人机交互界面的屏占比最大化，乃是当前的研发重点。\n\n[0003]第一代全面屏技术主要集中于屏幕尺寸比例由16:9变化为18+：9，第二代全面屏则是进一步地压缩屏幕上下左右的边界，甚至采用柔性折叠技术最大化可视面积，而近期全面屏的另一个动向则是如何将显示终端的指纹识别、摄像头、面部识别、距离传感等传感器进一步地融合进显示屏的可操作区(Active Area；AA区)，使得显示屏从单纯的显示界面逐渐过渡到全面的感知、交互界面。\n\n[0004]目前主流的显示技术包括LCD(liquid crystal display，液晶显示器)和OLED(organic light-emitting diode，有机发光二极管)，其中LCD为被动发光技术，通过整面背光结构照射液晶盒实现光线的亮暗控制；而OLED技术则是采用逐颗的OLED像素主动发光，因此相较而言具有高对比、轻薄、可弯曲、可折叠等优势。\n\n[0005]另一方面，基于OLED无背光的特性，可以很好的与现行的光学指纹识别模组兼容，因而面内光学指纹识别成为目前OLED的独有优势，同时业界也在开发基于OLED的屏下摄像头方案，从而可以进一步在显示模式和成像模式之间切换，并且因此具有无需现行LCD挖孔方案所造成的挖孔区无法显示的优势。\n\n[0006]最新一代的微发光二极管(Micro LED)显示技术，其相较于OLED技术具有相似的主动发光特性，同时由于无机LED本身的稳定性与高效率等特点，在技术上较OLED具有寿命长、亮度高、控制芯片(chip)尺寸小、响应时间长等优势，目前已经成为显示业界的重点开发方向之一。但是相较于传统面板技术乃是通过刻蚀等“减法制造”的方式，微发光二极管主要依赖于巨量转移(mass-transfer)的“加法制造”方式，在技术成熟度上较低，特别是面临巨量显示画素转移时具有先天的制程良率与成本挑战，因而在短期内仍然难以成为真正成熟的显示技术。\n\n[0007]显然综上三种显示技术，OLED具有明显的全面屏技术优势，LCD低成本的优势在基于屏下传感的下一代全面屏技术需求上显得岌岌可危，而次世代的微发光二极管技术虽于全面屏技术的要求上具有巨大的优势，但是制程上仍面临着巨量转移良率及成本偏高的问题，因而如何在现有的LCD技术上实现较OLED更优方案成为业界探索的一个重要方向。\n\n【发明内容】\n\n[0008]为解决上述技术问题，本揭示的一目的在于提供一种用于屏下辨识方案的液晶显示设备，其能够通过在液晶显示面板下的屏下传感器的位置处采用彩色滤光片分路(CF-bypass)及无像素电路的方式实现透明显示，并且在处堆叠方向上采用基于透明基板的小面积微发光二极管模块进行显示。所述微发光二极管模块采用RGB三色显示，且各个子像素芯片(chip)覆盖大小小于子像素(subpixel)大小，在子像素内部无芯片的区域，光线可以正常通过，因而在子像素打开时，所述微发光二极管模块的微发光二极管可操作区可以实现正常显示，同时在任意时刻可以透过子像素的关闭，使所述微发光二极管模块的所述微发光二极管可操作区采集外界图像进入屏下传感器，如此一来，便可以实现屏下指纹识别、屏下摄像头、屏下面部识别、屏下距离感知等各种屏下传感方案。此外，所述微发光二极管模块的所述微发光二极管可操作区与液晶模块的液晶模块可操作区无缝衔接，因而在视觉上没有任何显示中断及不连续边界(如凹口、挖孔等)，可以实现完全的全面屏设计。又，由于微发光二极管具有高亮、长寿命特征，故可以采用微发光二极管的部分子像素兼做补光灯、指示灯等功能。\n\n[0009]为达成上述目的，本揭示提供一种用于屏下辨识方案的液晶显示设备。所述液晶显示设备包括：液晶模块、背光模块、屏下传感器及微发光二极管(Micro LED)模块。所述液晶模块包括阵列玻璃，以及依序设置于所述阵列玻璃上方的液晶层、彩色滤光片与偏光片，所述液晶模块定义液晶模块可操作区与临接于所述液晶模块可操作区的挖孔区。所述背光模块设置于所述液晶模块下方并朝向所述液晶模块发光。所述屏下传感器相对于所述液晶模块的所述挖孔区，设置于所述背光模块内。所述微发光二极管模块设置于所述液晶模块所定义的所述挖孔区内。其中，所述微发光二极管模块定义微发光二极管可操作区，且所述微发光二极管可操作区临接于所述液晶模块可操作区。\n\n[0010]于本揭示其中的一实施例中，所述微发光二极管模块具有透明基板及设置于所述透明基板上的复数子像素(subpixel)与复数芯片。\n\n[0011]于本揭示其中的一实施例中，所述微发光二极管模块的所述芯片的大小为1-500μm，所述微发光二极管模块的所述子像素的大小为10-1000μm。\n\n[0012]于本揭示其中的一实施例中，各所述芯片的覆盖大小小于各所述子像素的大小。\n\n[0013]于本揭示其中的一实施例中，所述屏下传感器包括指纹识别、摄像头、结构光传感器、飞行时间测距(Time of Flight，TOF)传感器、距离传感器、及光线传感器。\n\n[0014]于本揭示其中的一实施例中，所述微发光二极管模块采用RGB三色显示。\n\n[0015]于本揭示其中的一实施例中，所述微发光二极管可操作区设置于所述液晶模块的挖孔、水滴、凹口(notch)、及面外等位置。\n\n[0016]于本揭示其中的一实施例中，所述微发光二极管可操作区的面积小于10*10mm。\n\n[0017]于本揭示其中的一实施例中，所述微发光二极管模块的基板采用无源选址驱动(PM：Passive Matrix)方式或有源选址驱动(AM：Active Matrix)方式进行驱动。\n\n[0018]于本揭示其中的一实施例中，所述微发光二极管模块在纵向堆叠上采用内藏式(in-cell)、表面嵌入式(on-cell)、或外挂式(add-on)等结构。\n\n[0019]为让本揭示的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下。\n\n【附图说明】\n\n[0020]图1(a)-图1(e)显示根据本揭示的用于屏下辨识方案的液晶显示设备所具有的微发光二极管的可操作区的设置位置示意图；\n\n[0021]图2显示根据本揭示的用于屏下辨识方案的液晶显示设备的第一实施例示意图；\n\n[0022]图3显示根据本揭示的用于屏下辨识方案的液晶显示设备的第二实施例示意图；\n\n[0023]图4显示根据本揭示的用于屏下辨识方案的液晶显示设备的第三实施例示意图；以及\n\n[0024]图5显示根据本揭示的用于屏下辨识方案的液晶显示设备所具有的微发光二极管模块的示意图。\n\n【具体实施方式】\n\n[0025]为了让本揭示的上述及其他目的、特征、优点能更明显易懂，下文将特举本揭示优选实施例，并配合所附图式，作详细说明如下。再者，本揭示所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧层、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。\n\n[0026]在图中，结构相似的单元是以相同标号表示。\n\n[0027]如图1-图5所示，本揭示的一目的在于提供一种用于屏下辨识方案的液晶显示设备100，其能够通过在液晶显示面板下的屏下传感器的位置处采用彩色滤光片分路(CF-bypass)及无像素电路的方式实现透明显示，并且在处堆叠方向上采用基于透明基板的小面积微发光二极管(Micro LED)模块140进行显示。\n\n[0028]请先参阅图5，所述微发光二极管模块140采用红蓝绿(RGB)三色显示，且各个子像素芯片(chip)144覆盖大小小于子像素(subpixel)143的大小，在子像素143内部无芯片144的区域，光线可以正常通过，因而如图2-4所示，在子像素143打开时，所述微发光二极管模块140的微发光二极管可操作区141可以实现正常显示，同时在任意时刻可以透过子像素143的关闭，使所述微发光二极管模块140的所述微发光二极管可操作区141采集外界图像进入屏下传感器，如此一来，便可以实现屏下指纹识别、屏下摄像头、屏下面部识别、屏下距离感知等各种屏下传感方案。\n\n[0029]请再次参阅图1(a)-1(e)，于本揭示中，所述微发光二极管模块140的所述微发光二极管可操作区141与液晶模块110的液晶模块可操作区115无缝衔接，因而在视觉上没有任何显示中断及不连续边界(如凹口、挖孔等)，可以实现完全的全面屏设计。又，由于微发光二极管具有高亮、长寿命特征，故可以采用微发光二极管的部分子像素143兼做补光灯、指示灯等功能。\n\n[0030]详细而言，如图2的用于屏下辨识方案的液晶显示设备100的第一实施例示意图所示，本揭示提供一种用于屏下辨识方案的液晶显示设备100。所述液晶显示设备100包括：液晶模块110、背光模块120、屏下传感器130及微发光二极管模块140。\n\n[0031]所述液晶模块110包括阵列玻璃111，以及依序设置于所述阵列玻璃111上方的液晶层112、彩色滤光片113与偏光片114，所述液晶模块110定义液晶模块可操作区115与临接于所述液晶模块可操作区115的挖孔区116。\n\n[0032]所述背光模块120设置于所述液晶模块110下方并朝向所述液晶模块110发光。所述屏下传感器130相对于所述液晶模块110的所述挖孔区116且设置于所述背光模块120内。\n\n[0033]所述微发光二极管模块140设置于所述液晶模块110所定义的所述挖孔区116内，且详细而言，所述微发光二极管模块140乃是以内藏式(in-cell)的方式设置于所述液晶模块110内。\n\n[0034]如图2所示，所述微发光二极管模块140定义微发光二极管可操作区141，且所述微发光二极管可操作区141以无缝衔接的方式临接于所述液晶模块可操作区115，因而在视觉上没有任何显示中断及不连续边界。\n\n[0035]如图5所示，于本揭示中，所述微发光二极管模块140具有透明基板142及设置于所述透明基板142上的复数子像素143与复数芯片144。所述微发光二极管模块140的所述芯片144的大小为1-500微米(μm)，所述微发光二极管模块140的所述子像素143的大小为10-1000μm。此外，各所述芯片144的覆盖大小皆小于各所述子像素143的大小。因此，在所述子像素143内部无所述芯片144的区域，光线可以正常通过，因而在所述子像素143打开时，所述微发光二极管模块140的微发光二极管可操作区141可以实现正常显示，同时在任意时刻可以透过对所述子像素143的关闭，使所述微发光二极管模块140的所述微发光二极管可操作区141采集外界图像进入所述屏下传感器130。如此一来，便可以实现屏下指纹识别、屏下摄像头、屏下面部识别、屏下距离感知等各种屏下传感方案。\n\n[0036]于图3所绘示的第二实施例中，乃是将所述微发光二极管模块140以表面嵌入式(on-cell)的方式设置于所述液晶模块110内，除此之外，其他组件间的相互空间关系皆相同于图2所示的第一实施例，故所述微发光二极管可操作区141同样能够以无缝衔接的方式临接于所述液晶模块可操作区115，因而在视觉上没有任何显示中断及不连续边界。\n\n[0037]于图4所绘示的第三实施例中，乃是将所述微发光二极管模块140以外挂式(add-on)的方式设置于所述液晶模块110内，除此之外，其他组件间的相互空间关系皆相同于图2所示的第一实施例，故所述微发光二极管可操作区141同样能够以无缝衔接的方式临接于所述液晶模块可操作区115，因而在视觉上没有任何显示中断及不连续边界。\n\n[0038]于本揭示中，所述屏下传感器130包括指纹识别、摄像头、结构光传感器、飞行时间测距传感器、距离传感器、及光线传感器等屏下传感器。\n\n[0039]于本揭示中，所述微发光二极管模块140采用RGB三色显示，但并不以此作为限制。\n\n[0040]如图1(a)-图1(e)所示，于本揭示中，所述微发光二极管可操作区141可分别设置于所述液晶模块110的挖孔(如图1(a)、1(d))、水滴(如图1(b))、凹口(如图1(c))、及面外(如图1(e))等位置，且所述微发光二极管模块140的所述微发光二极管可操作区141与所述液晶模块110的液晶模块可操作区115无缝衔接，因而在视觉上没有任何显示中断及不连续边界，藉此实现完全的全面屏设计。\n\n[0041]于本揭示的实施例中，所述微发光二极管可操作区141的面积小于10*10毫米(mm)，因为前述面积所需求的子像素数目较少，从而可以保证该区域的转印良率与并进行成本控制。\n\n[0042]于本揭示的实施例中，所述微发光二极管模块140的基板采用无源选址驱动(PM：Passive Matrix)方式或有源选址驱动(AM：Active Matrix)方式进行驱动。\n\n[0043]综上所述，由于本揭示所提供的一种用于屏下辨识方案的液晶显示设备100所具有的所述微发光二极管模块140采用RGB三色显示，且各个所述子像素芯片144的覆盖大小皆小于所述子像素143的大小，使得在所述子像素143内部无所述芯片144的区域，光线可以正常通过，因而在所述子像素143打开时，所述微发光二极管模块140的微发光二极管可操作区141可以实现正常显示，同时在任意时刻可以透过所述子像素143的关闭，使所述微发光二极管模块140的所述微发光二极管可操作区141采集外界图像进入屏下传感器，如此一来，便可以简单地实现屏下指纹识别、屏下摄像头、屏下面部识别、屏下距离感知等各种屏下传感方案，避免采用OLED的高额制造成本。\n\n[0044]尽管已经相对于一个或多个实现方式示出并描述了本揭示，但是本领域技术人员基于对本说明书和附图的阅读和理解将会想到等价变型和修改。本揭示包括所有这样的修改和变型，并且仅由所附权利要求的范围限制。特别地关于由上述组件执行的各种功能，用于描述这样的组件的术语旨在对应于执行所述组件的指定功能(例如其在功能上是等价的)的任意组件(除非另外指示)，即使在结构上与执行本文所示的本说明书的示范性实现方式中的功能的公开结构不等同。此外，尽管本说明书的特定特征已经相对于若干实现方式中的仅一个被公开，但是这种特征可以与如可以对给定或特定应用而言是期望和有利的其他实现方式的一个或多个其他特征组合。而且，就术语“包括”、“具有”、“含有”或其变形被用在具体实施方式或权利要求中而言，这样的术语旨在以与术语“包含”相似的方式包括。\n\n[0045]以上仅是本揭示的优选实施方式，应当指出，对于本领域普通技术人员，在不脱离本揭示原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本揭示的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10677, 23731, '技术领域\n\n[0001]本发明涉及一种显示器领域，尤其涉及一种背光模块及其透光率的调控方法。\n\n背景技术\n\n[0002]直下式微型发光二极管(mini-LED)灯板，发光二极管(LED)大截距需要大的光源到薄膜距离(optical distance,OD)来遮蔽LED灯影，例如截距大于2mm，可能会需要1.0mm～1.5mm的OD来遮蔽LED灯影。\n\n[0003]大OD会导致模组设计困难，使液晶显示器模块(liquid crystal displaymodule,LCM)结构稳定性变差。且因为扩散板厚度非连续变化，会产生OD设计过剩，比如现有扩散板(厚度0.8～1.0～1.2～1.5)，从而增加液晶显示器模块的整体厚度。\n\n[0004]因此，亟需一种背光模块，在利用微型发光二极管的液晶显示器模块中，实现连续可调的透光率，当发光二极管的截距不同时，无需改变OD、无需改变液晶显示器模块的整体厚度，仅需控制聚合物网络液晶(polymer network liquid crystal,PNLC)薄膜的透光率即可产生不同程度的遮蔽性。\n\n发明内容\n\n[0005]有鉴于此，本发明提供一种新的背光模块及其透光率的调控方法，在利用微型发光二极管的液晶显示器模块中，实现连续可调的光源到薄膜距离(optical distance,OD)，当发光二极管的截距不同时，无需改变OD、无需改变液晶显示器模块的整体厚度，仅需控制聚合物网络液晶(polymer network liquid crystal,PNLC)薄膜的透光率即可产生不同程度的遮蔽性，得到小OD的背光模块，降低显示器的整体厚度，并且提高模块设计的稳定性。\n\n[0006]据此，依据本发明的一实施例，本发明提供了一种背光模块，包括：基板；多个微型发光二极管，间隔配置于所述基板上；聚合物网络液晶层，配置于所述多个微型发光二极管上方，其中，所述聚合物网络液晶层是多层结构或单层结构；以及光学功能层，配置于所述聚合物网络液晶层上方。\n\n[0007]依据本发明的另一实施例，本发明提供了一种背光模块，包括：基板；多个微型发光二极管，间隔配置于所述基板上；聚合物网络液晶层，配置于所述多个微型发光二极管上方；多个透明电极配置于所述聚合物网络液晶层的上下两侧；以及光学功能层，配置于所述聚合物网络液晶层上方。\n\n[0008]依据本发明的一实施例，所述聚合物网络液晶层包括对应于所述多个微型发光二极管的图案化上表面及/或图案化下表面。\n\n[0009]依据本发明的一实施例，所述聚合物网络液晶层包括多个液晶空盒分别对应至所述多个微型发光二极管以外的区域，使对应至所述多个微型发光二极管的所述聚合物网络液晶具有第一厚度，对应至所述多个微型发光二极管以外的区域的所述聚合物网络液晶具有第二厚度，所述第一厚度大于所述第二厚度。\n\n[0010]依据本发明的一实施例，所述光学功能层是多层结构或单层结构，所述光学功能层包括增亮膜。\n\n[0011]依据本发明的再一实施例，本发明还提供了一种背光模块透光率的调控方法，包括以下步骤：S10提供一背光模块，包括：基板；多个微型发光二极管，间隔配置于所述基板上；聚合物网络液晶层，配置于所述多个微型发光二极管上方；以及光学功能层，配置于所述聚合物网络液晶层上方。\n\n[0012]依据本发明的一实施例，所述背光模块透光率的调控方法更包括：S20a对所述聚合物网络液晶层进行雾化处理，包括：提供驱动电压给所述聚合物网络液晶层，并且利用UV照射所述聚合物网络液晶层使所述聚合物网络液晶层固化并具有雾化结构。\n\n[0013]依据本发明的一实施例，所述背光模块透光率的调控方法更包括：S20b对所述聚合物网络液晶层进行图案化，使所述聚合物网络液晶层具有至少一图案化表面，其中所述至少一图案化表面的截距对应所述多个微型发光二极管的截距，所述图案对应遮蔽所述多个微型发光二极管并且露出多个微型发光二极管以外的区域。\n\n[0014]依据本发明的一实施例，在步骤S10中，所述背光模块更包括：多个透明电极配置于所述聚合物网络液晶层的上下两侧，且所述背光模块透光率的调控方法更包括：S20c藉由所述多个透明电极将所述聚合物网络液晶层分成多个区块，提供不同电压给所述多个透明电极，以连续调整所述多个区块的各自的透光率。\n\n[0015]依据本发明的一实施例，在步骤S10中，所述聚合物网络液晶层包括多个液晶空盒分别对应至所述多个微型发光二极管以外的区域，使对应至所述多个微型发光二极管的所述聚合物网络液晶具有第一厚度，对应至所述多个微型发光二极管以外的区域的所述聚合物网络液晶具有第二厚度，所述第一厚度大于所述第二厚度，藉由具有所述第一厚度的所述聚合物网络液晶提高所述多个微型发光二极管的遮蔽性以降低透光率，以及藉由具有所述第二厚度的所述聚合物网络液晶降低对所述多个微型发光二极管以外的区域的遮蔽性以提高透光率。\n\n[0016]本发明的另一实施例还提供了一种显示器，包括所述背光模块。\n\n附图说明\n\n[0017]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0018]图1为依据本发明第一实施例的背光模块示意图。\n\n[0019]图2为依据本发明第一实施例的背光模块的透光率的调控方法的流程图。\n\n[0020]图3为依据本发明第二实施例的背光模块示意图。\n\n[0021]图4为依据本发明第二实施例的背光模块的透光率的调控方法的流程图。\n\n[0022]图5为依据本发明第三实施例的背光模块示意图。\n\n[0023]图6为依据本发明第三实施例的背光模块的透光率的调控方法的流程图。\n\n[0024]图7为依据本发明第四实施例的背光模块示意图。\n\n[0025]图8为依据本发明第四实施例的背光模块的透光率的调控方法的流程图。\n\n[0026]图9为依据本发明一实施例的显示器示意图。\n\n具体实施方式\n\n[0027]为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式作详细说明。\n\n[0028]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[纵向]、[横向]、[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0029]为解决习知技术的问题，本发明提供一种新的背光模块及其透光率的调控方法，在利用微型发光二极管的液晶显示器模块中，实现连续可调的光源到薄膜距离(opticaldistance,OD)，当发光二极管的截距不同时，无需改变OD、无需改变液晶显示器模块的整体厚度，仅需控制聚合物网络液晶(polymer network liquid crystal,PNLC)薄膜的透光率即可产生不同程度的遮蔽性，得到小OD的背光模块，降低显示器的整体厚度，并且提高模块设计的稳定性。\n\n[0030]第一实施例\n\n[0031]在本发明的第一实施例中，利用单层或者多层的聚合物网络液晶(polymernetwork liquid crystal,PNLC)薄膜，来替代习知液晶显示器模块的背光模块中的扩散膜或扩散板。\n\n[0032]图1为依据本发明第一实施例的背光模块示意图。图2为依据本发明第一实施例的背光模块的透光率的调控方法的流程图。一并参见图1及图2，具体而言，本发明的背光模块100的透光率的调控方法，包括以下步骤：\n\n[0033]S10提供一背光模块100，包括：基板10；多个微型发光二极管20，间隔配置于所述基板10上；聚合物网络液晶层30，配置于所述多个微型发光二极管20上方；以及光学功能层40，配置于所述聚合物网络液晶层30上方，如图1所示。\n\n[0034]S20a对所述聚合物网络液晶层30进行雾化处理，包括：提供驱动电压给所述聚合物网络液晶层30，并且利用UV照射所述聚合物网络液晶层30使所述聚合物网络液晶层30固化并具有雾化结构31。\n\n[0035]第二实施例\n\n[0036]本发明的第二实施例与第一实施例大致相同，相异处在于，本发明的第二实施例对所述聚合物网络液晶层采用图案化的表面雾度处理，在增加遮蔽性的同时尽量减少透光率的损失。\n\n[0037]图3为依据本发明第二实施例的背光模块200示意图。图4为依据本发明第二实施例的背光模块200的透光率的调控方法的流程图。一并参见图3及图4，具体而言，本发明的背光模块200的透光率的调控方法，包括以下步骤：\n\n[0038]S10提供一背光模块200，包括：基板10；多个微型发光二极管20，间隔配置于所述基板10上；聚合物网络液晶层30，配置于所述多个微型发光二极管20上方；以及光学功能层40，配置于所述聚合物网络液晶层30上方，如图3所示。\n\n[0039]S20b对所述聚合物网络液晶层30进行图案化，使所述聚合物网络液晶层30具有至少一图案化表面，其中所述至少一图案化表面的截距D对应所述多个微型发光二极管20的截距D，所述图案32对应遮蔽所述多个微型发光二极管20并且露出多个微型发光二极管20以外的区域。\n\n[0040]在本实施例中，所述聚合物网络液晶层30可具有一图案化表面，或具有相对的两个图案化表面。\n\n[0041]第三实施例\n\n[0042]本发明的第三实施例与第一实施例大致相同，相异处在于，本发明的第三实施例在所述聚合物网络液晶层30的上下两侧配置多个透明电极50，利用多个透明电极将所述聚合物网络液晶层分成多个区块，藉以连续调整所述多个区块的各自的透光率。\n\n[0043]图5为依据本发明第三实施例的背光模块300示意图。图6为依据本发明第三实施例的背光模块300的透光率的调控方法的流程图。一并参见图5及图6，具体而言，本发明的背光模块300的透光率的调控方法，包括以下步骤：\n\n[0044]S10提供一背光模块300，包括：基板10；多个微型发光二极管20，间隔配置于所述基板10上；聚合物网络液晶层30，配置于所述多个微型发光二极管20上方；多个透明电极50配置于所述聚合物网络液晶层30的上下两侧；以及光学功能层40，配置于所述聚合物网络液晶层30上方，如图5所示。\n\n[0045]S20c藉由所述多个透明电极50将所述聚合物网络液晶层30分成多个区块33，提供不同电压给所述多个透明电极50，以连续调整所述多个区块33的各自的透光率。\n\n[0046]第四实施例\n\n[0047]本发明的第四实施例与第一实施例大致相同，相异处在于，本发明的第四实施例利用图案化的双液晶盒厚度设计的，使所述聚合物网络液晶层在较大厚度处具有较大的扩散性及较低的透光率，以提高较大厚度处的遮蔽性。\n\n[0048]图7为依据本发明第四实施例的背光模块400示意图。图8为依据本发明第四实施例的背光模块400的透光率的调控方法的流程图。一并参见图7及图8，具体而言，本发明的背光模块400的透光率的调控方法，包括以下步骤：\n\n[0049]S10提供一背光模块400，包括：基板10；多个微型发光二极管20，间隔配置于所述基板10上；聚合物网络液晶层30，配置于所述多个微型发光二极管20上方；以及光学功能层40，配置于所述聚合物网络液晶层30上方，如图7所示。\n\n[0050]在本实施例中，所述聚合物网络液晶层30包括多个液晶空盒34分别对应至所述多个微型发光二极管20以外的区域，使对应至所述多个微型发光二极管20的所述聚合物网络液晶具有第一厚度H1，对应至所述多个微型发光二极管20以外的区域的所述聚合物网络液晶具有第二厚度H2，所述第一厚度H1大于所述第二厚度H2，藉由具有所述第一厚度H1的所述聚合物网络液晶提高所述多个微型发光二极管20的遮蔽性以降低透光率，以及藉由具有所述第二厚度H2的所述聚合物网络液晶降低对所述多个微型发光二极管20以外的区域的遮蔽性以提高透光率。\n\n[0051]在上述多个实施例中，所述光学功能层40及所述聚合物网络液晶层30可各自独立地为单层或多层。\n\n[0052]在上述多个实施例中，所述光学功能层40可包括增亮膜。\n\n[0053]图9为依据本发明一实施例的显示器示意图。参见图9，本发明的另一实施例还提供了一种显示器1，包括所述背光模块100及配置于所述背光模块100上的显示屏1000。\n\n[0054]依据本发明的其他实施例，显示器1的背光模块可择自下列之一者：所述背光模块100、所述背光模块200、所述背光模块300、所述背光模块400、及其组合(图未示)。\n\n[0055]依据本发明所揭示的多个实施例可知，本发明提供的背光模块及其透光率的调控方法，可在利用微型发光二极管的液晶显示器模块中，实现连续可调的光源到薄膜距离(optical distance,OD)，当发光二极管的截距不同时，无需改变OD、无需改变液晶显示器模块的整体厚度，仅需控制聚合物网络液晶(polymer network liquid crystal,PNLC)薄膜的透光率即可产生不同程度的遮蔽性，得到小OD的背光模块，降低显示器的整体厚度，并且提高模块设计的稳定性。\n\n[0056]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及一种显示器领域，尤其涉及一种背光模块及其透光率的调控方法。\n\n背景技术\n\n[0002]直下式微型发光二极管(mini-LED)灯板，发光二极管(LED)大截距需要大的光源到薄膜距离(optical distance,OD)来遮蔽LED灯影，例如截距大于2mm，可能会需要1.0mm～1.5mm的OD来遮蔽LED灯影。\n\n[0003]大OD会导致模组设计困难，使液晶显示器模块(liquid crystal displaymodule,LCM)结构稳定性变差。且因为扩散板厚度非连续变化，会产生OD设计过剩，比如现有扩散板(厚度0.8～1.0～1.2～1.5)，从而增加液晶显示器模块的整体厚度。\n\n[0004]因此，亟需一种背光模块，在利用微型发光二极管的液晶显示器模块中，实现连续可调的透光率，当发光二极管的截距不同时，无需改变OD、无需改变液晶显示器模块的整体厚度，仅需控制聚合物网络液晶(polymer network liquid crystal,PNLC)薄膜的透光率即可产生不同程度的遮蔽性。\n\n发明内容\n\n[0005]有鉴于此，本发明提供一种新的背光模块及其透光率的调控方法，在利用微型发光二极管的液晶显示器模块中，实现连续可调的光源到薄膜距离(optical distance,OD)，当发光二极管的截距不同时，无需改变OD、无需改变液晶显示器模块的整体厚度，仅需控制聚合物网络液晶(polymer network liquid crystal,PNLC)薄膜的透光率即可产生不同程度的遮蔽性，得到小OD的背光模块，降低显示器的整体厚度，并且提高模块设计的稳定性。\n\n[0006]据此，依据本发明的一实施例，本发明提供了一种背光模块，包括：基板；多个微型发光二极管，间隔配置于所述基板上；聚合物网络液晶层，配置于所述多个微型发光二极管上方，其中，所述聚合物网络液晶层是多层结构或单层结构；以及光学功能层，配置于所述聚合物网络液晶层上方。\n\n[0007]依据本发明的另一实施例，本发明提供了一种背光模块，包括：基板；多个微型发光二极管，间隔配置于所述基板上；聚合物网络液晶层，配置于所述多个微型发光二极管上方；多个透明电极配置于所述聚合物网络液晶层的上下两侧；以及光学功能层，配置于所述聚合物网络液晶层上方。\n\n[0008]依据本发明的一实施例，所述聚合物网络液晶层包括对应于所述多个微型发光二极管的图案化上表面及/或图案化下表面。\n\n[0009]依据本发明的一实施例，所述聚合物网络液晶层包括多个液晶空盒分别对应至所述多个微型发光二极管以外的区域，使对应至所述多个微型发光二极管的所述聚合物网络液晶具有第一厚度，对应至所述多个微型发光二极管以外的区域的所述聚合物网络液晶具有第二厚度，所述第一厚度大于所述第二厚度。\n\n[0010]依据本发明的一实施例，所述光学功能层是多层结构或单层结构，所述光学功能层包括增亮膜。\n\n[0011]依据本发明的再一实施例，本发明还提供了一种背光模块透光率的调控方法，包括以下步骤：S10提供一背光模块，包括：基板；多个微型发光二极管，间隔配置于所述基板上；聚合物网络液晶层，配置于所述多个微型发光二极管上方；以及光学功能层，配置于所述聚合物网络液晶层上方。\n\n[0012]依据本发明的一实施例，所述背光模块透光率的调控方法更包括：S20a对所述聚合物网络液晶层进行雾化处理，包括：提供驱动电压给所述聚合物网络液晶层，并且利用UV照射所述聚合物网络液晶层使所述聚合物网络液晶层固化并具有雾化结构。\n\n[0013]依据本发明的一实施例，所述背光模块透光率的调控方法更包括：S20b对所述聚合物网络液晶层进行图案化，使所述聚合物网络液晶层具有至少一图案化表面，其中所述至少一图案化表面的截距对应所述多个微型发光二极管的截距，所述图案对应遮蔽所述多个微型发光二极管并且露出多个微型发光二极管以外的区域。\n\n[0014]依据本发明的一实施例，在步骤S10中，所述背光模块更包括：多个透明电极配置于所述聚合物网络液晶层的上下两侧，且所述背光模块透光率的调控方法更包括：S20c藉由所述多个透明电极将所述聚合物网络液晶层分成多个区块，提供不同电压给所述多个透明电极，以连续调整所述多个区块的各自的透光率。\n\n[0015]依据本发明的一实施例，在步骤S10中，所述聚合物网络液晶层包括多个液晶空盒分别对应至所述多个微型发光二极管以外的区域，使对应至所述多个微型发光二极管的所述聚合物网络液晶具有第一厚度，对应至所述多个微型发光二极管以外的区域的所述聚合物网络液晶具有第二厚度，所述第一厚度大于所述第二厚度，藉由具有所述第一厚度的所述聚合物网络液晶提高所述多个微型发光二极管的遮蔽性以降低透光率，以及藉由具有所述第二厚度的所述聚合物网络液晶降低对所述多个微型发光二极管以外的区域的遮蔽性以提高透光率。\n\n[0016]本发明的另一实施例还提供了一种显示器，包括所述背光模块。\n\n附图说明\n\n[0017]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0018]图1为依据本发明第一实施例的背光模块示意图。\n\n[0019]图2为依据本发明第一实施例的背光模块的透光率的调控方法的流程图。\n\n[0020]图3为依据本发明第二实施例的背光模块示意图。\n\n[0021]图4为依据本发明第二实施例的背光模块的透光率的调控方法的流程图。\n\n[0022]图5为依据本发明第三实施例的背光模块示意图。\n\n[0023]图6为依据本发明第三实施例的背光模块的透光率的调控方法的流程图。\n\n[0024]图7为依据本发明第四实施例的背光模块示意图。\n\n[0025]图8为依据本发明第四实施例的背光模块的透光率的调控方法的流程图。\n\n[0026]图9为依据本发明一实施例的显示器示意图。\n\n具体实施方式\n\n[0027]为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式作详细说明。\n\n[0028]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[纵向]、[横向]、[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0029]为解决习知技术的问题，本发明提供一种新的背光模块及其透光率的调控方法，在利用微型发光二极管的液晶显示器模块中，实现连续可调的光源到薄膜距离(opticaldistance,OD)，当发光二极管的截距不同时，无需改变OD、无需改变液晶显示器模块的整体厚度，仅需控制聚合物网络液晶(polymer network liquid crystal,PNLC)薄膜的透光率即可产生不同程度的遮蔽性，得到小OD的背光模块，降低显示器的整体厚度，并且提高模块设计的稳定性。\n\n[0030]第一实施例\n\n[0031]在本发明的第一实施例中，利用单层或者多层的聚合物网络液晶(polymernetwork liquid crystal,PNLC)薄膜，来替代习知液晶显示器模块的背光模块中的扩散膜或扩散板。\n\n[0032]图1为依据本发明第一实施例的背光模块示意图。图2为依据本发明第一实施例的背光模块的透光率的调控方法的流程图。一并参见图1及图2，具体而言，本发明的背光模块100的透光率的调控方法，包括以下步骤：\n\n[0033]S10提供一背光模块100，包括：基板10；多个微型发光二极管20，间隔配置于所述基板10上；聚合物网络液晶层30，配置于所述多个微型发光二极管20上方；以及光学功能层40，配置于所述聚合物网络液晶层30上方，如图1所示。\n\n[0034]S20a对所述聚合物网络液晶层30进行雾化处理，包括：提供驱动电压给所述聚合物网络液晶层30，并且利用UV照射所述聚合物网络液晶层30使所述聚合物网络液晶层30固化并具有雾化结构31。\n\n[0035]第二实施例\n\n[0036]本发明的第二实施例与第一实施例大致相同，相异处在于，本发明的第二实施例对所述聚合物网络液晶层采用图案化的表面雾度处理，在增加遮蔽性的同时尽量减少透光率的损失。\n\n[0037]图3为依据本发明第二实施例的背光模块200示意图。图4为依据本发明第二实施例的背光模块200的透光率的调控方法的流程图。一并参见图3及图4，具体而言，本发明的背光模块200的透光率的调控方法，包括以下步骤：\n\n[0038]S10提供一背光模块200，包括：基板10；多个微型发光二极管20，间隔配置于所述基板10上；聚合物网络液晶层30，配置于所述多个微型发光二极管20上方；以及光学功能层40，配置于所述聚合物网络液晶层30上方，如图3所示。\n\n[0039]S20b对所述聚合物网络液晶层30进行图案化，使所述聚合物网络液晶层30具有至少一图案化表面，其中所述至少一图案化表面的截距D对应所述多个微型发光二极管20的截距D，所述图案32对应遮蔽所述多个微型发光二极管20并且露出多个微型发光二极管20以外的区域。\n\n[0040]在本实施例中，所述聚合物网络液晶层30可具有一图案化表面，或具有相对的两个图案化表面。\n\n[0041]第三实施例\n\n[0042]本发明的第三实施例与第一实施例大致相同，相异处在于，本发明的第三实施例在所述聚合物网络液晶层30的上下两侧配置多个透明电极50，利用多个透明电极将所述聚合物网络液晶层分成多个区块，藉以连续调整所述多个区块的各自的透光率。\n\n[0043]图5为依据本发明第三实施例的背光模块300示意图。图6为依据本发明第三实施例的背光模块300的透光率的调控方法的流程图。一并参见图5及图6，具体而言，本发明的背光模块300的透光率的调控方法，包括以下步骤：\n\n[0044]S10提供一背光模块300，包括：基板10；多个微型发光二极管20，间隔配置于所述基板10上；聚合物网络液晶层30，配置于所述多个微型发光二极管20上方；多个透明电极50配置于所述聚合物网络液晶层30的上下两侧；以及光学功能层40，配置于所述聚合物网络液晶层30上方，如图5所示。\n\n[0045]S20c藉由所述多个透明电极50将所述聚合物网络液晶层30分成多个区块33，提供不同电压给所述多个透明电极50，以连续调整所述多个区块33的各自的透光率。\n\n[0046]第四实施例\n\n[0047]本发明的第四实施例与第一实施例大致相同，相异处在于，本发明的第四实施例利用图案化的双液晶盒厚度设计的，使所述聚合物网络液晶层在较大厚度处具有较大的扩散性及较低的透光率，以提高较大厚度处的遮蔽性。\n\n[0048]图7为依据本发明第四实施例的背光模块400示意图。图8为依据本发明第四实施例的背光模块400的透光率的调控方法的流程图。一并参见图7及图8，具体而言，本发明的背光模块400的透光率的调控方法，包括以下步骤：\n\n[0049]S10提供一背光模块400，包括：基板10；多个微型发光二极管20，间隔配置于所述基板10上；聚合物网络液晶层30，配置于所述多个微型发光二极管20上方；以及光学功能层40，配置于所述聚合物网络液晶层30上方，如图7所示。\n\n[0050]在本实施例中，所述聚合物网络液晶层30包括多个液晶空盒34分别对应至所述多个微型发光二极管20以外的区域，使对应至所述多个微型发光二极管20的所述聚合物网络液晶具有第一厚度H1，对应至所述多个微型发光二极管20以外的区域的所述聚合物网络液晶具有第二厚度H2，所述第一厚度H1大于所述第二厚度H2，藉由具有所述第一厚度H1的所述聚合物网络液晶提高所述多个微型发光二极管20的遮蔽性以降低透光率，以及藉由具有所述第二厚度H2的所述聚合物网络液晶降低对所述多个微型发光二极管20以外的区域的遮蔽性以提高透光率。\n\n[0051]在上述多个实施例中，所述光学功能层40及所述聚合物网络液晶层30可各自独立地为单层或多层。\n\n[0052]在上述多个实施例中，所述光学功能层40可包括增亮膜。\n\n[0053]图9为依据本发明一实施例的显示器示意图。参见图9，本发明的另一实施例还提供了一种显示器1，包括所述背光模块100及配置于所述背光模块100上的显示屏1000。\n\n[0054]依据本发明的其他实施例，显示器1的背光模块可择自下列之一者：所述背光模块100、所述背光模块200、所述背光模块300、所述背光模块400、及其组合(图未示)。\n\n[0055]依据本发明所揭示的多个实施例可知，本发明提供的背光模块及其透光率的调控方法，可在利用微型发光二极管的液晶显示器模块中，实现连续可调的光源到薄膜距离(optical distance,OD)，当发光二极管的截距不同时，无需改变OD、无需改变液晶显示器模块的整体厚度，仅需控制聚合物网络液晶(polymer network liquid crystal,PNLC)薄膜的透光率即可产生不同程度的遮蔽性，得到小OD的背光模块，降低显示器的整体厚度，并且提高模块设计的稳定性。\n\n[0056]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10678, 23732, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其是涉及一种可以产生内部补偿所需要的负向脉冲时序的GOA单元、GOA电路及显示面板。\n\n背景技术\n\n[0002]随着显示面板的发展，人们追求更大屏幕、更高的分辨率、更刺激的视觉效果，这无疑对面板制程、材料以及工艺提出了更高的要求。OLED(organic light emittingdiode，有机电致发光二极管)显示面板是一种自发光的显示技术，具有视角宽、对比度高、功耗低、色彩鲜艳等优点。由于这些优势，AMOLED(active matrix organic lightemitting diode，有源有机电致发光二极管)显示面板在显示行业所占的比重正在逐年增加。TFT(Thin Film Transistor，薄膜晶体管)具有高空间利用效率、低消耗功率、无辐射以及低电磁干扰等优越特性。GOA(Gate Driver on Array，阵列基板栅极驱动)技术，是利用现有TFT的阵列(Array)基板制程将栅极驱动电路制作在阵列基板上，实现对栅极逐行扫描的驱动方式的一项技术。\n\n[0003]由于GOA电路代替了外接芯片，从而可减少显示装置的制作程序，降低成本；同时，可以节省栅极芯片(Gate IC)，提高显示装置的集成度。IGZO(indium gallium zincoxide，铟镓锌氧化物)是用于新一代薄膜晶体管技术中的沟道层材料。IGZO由于迁移率高，均匀性好等优点而在大尺寸AMOLED显示面板中广泛使用。但由于其稳定性不佳，因此AMOLED显示面板上通常会使用补偿电路以保证显示面板的亮度均匀性。\n\n[0004]请参阅图1A-图1B，其中，图1A为常规的5T2C内部补偿电路示意图，图1B为图1A所示电路的时序波形。\n\n[0005]如图1A所示，所述内部补偿电路包括：一第一薄膜晶体管T11、一第二薄膜晶体管T12、一第三薄膜晶体管T13、一第四薄膜晶体管T14、一第五薄膜晶体管T15，一第一电容C11以及一第二电容C12。其中，所述第一薄膜晶体管T11的栅极与一第一发光控制信号EM1相连接，其第一极连接所述第二薄膜晶体管T12的第一极，其第二极与一第一电源电压VDD相连接；所述第二薄膜晶体管T12的栅极连接所述第五薄膜晶体管T15的第一极，其第二极连接所述第三薄膜晶体管T13的第一极以及所述第四薄膜晶体管T14的第二极；所述第三薄膜晶体管T13的栅极与一第二发光控制信号EM2相连接，其第二极连接一发光二极管OLED1的阳极，所述发光二极管OLED1的阴极与一第二电源电压VSS相连接；所述第四薄膜晶体管T14的栅极与一数据读控制信号RD相连接，其第一极与一感测信号Sensing相连接；所述第五薄膜晶体管T15的栅极与一数据写控制信号WR相连接，其第二极与一数据信号Data相连接；所述第一电容C11连接在所述第二薄膜晶体管T12的栅极与其第二极之间；所述第二电容C12连接在所述第一薄膜晶体管T11的第二极与所述第二薄膜晶体管T12的第二极之间。\n\n[0006]如图1B所示，要完成AMOLED显示面板内部补偿，需要向所述内部补偿电路提供两种脉冲波形：一种为正向脉冲波形(WR/RD)，这种波形可以使用常规的IGZO_TFT的GOA电路产生；而另一种为负向脉冲波形(EM1/EM2)，这种波形通常需要使用p型的GOA电路才能正常生成，普适性不高。\n\n[0007]因此，如何实现采用具有普适性的结构、电路实现方式，产生显示面板内部补偿所需要的负向脉冲波形，成为显示面板内部补偿亟待解决的技术问题。\n\n发明内容\n\n[0008]本发明的目的在于，解决现有技术存在的问题，提供一种GOA单元、GOA电路及显示面板，可以采用具有普适性的结构、电路实现方式，产生显示面板内部补偿所需要的负向脉冲波形。\n\n[0009]为实现上述目的，本发明提供了一种GOA单元，所述GOA单元包括一上拉模块、一上拉维持模块、一反相模块、一下拉维持模块以及一下拉模块；所述上拉模块与一时钟信号端、一控制信号端以及一第一节点相连接，用于在所述时钟信号端的一第一电位信号的控制下，将所述控制信号端的信号输出至所述第一节点；所述上拉维持模块与一第一电压端、一第一输出端、一第二输出端以及所述第一节点相连接，用于在所述第一节点的控制下，将所述第一电压端的信号输出至所述第一输出端以及所述第二输出端；所述反相模块与一第二电压端、一第二节点、所述第一电压端以及所述第一节点相连接，用于在所述第一节点的控制下，将所述第一电压端或所述第二电压端的信号输出至所述第二节点；所述下拉维持模块与所述第二电压端、所述第二节点以及所述第一节点相连接，用于在所述第二节点的控制下，将所述第二电压端的信号输出至所述第一节点；所述下拉模块与所述时钟信号端、所述第二节点、所述第一输出端以及所述第二输出端相连接，用于在所述第二节点的控制下，将所述时钟信号端的一第二电位信号输出至所述第一输出端以及所述第二输出端。\n\n[0010]为实现上述目的，本发明还提供了一种GOA电路，包括：级联的多个GOA单元；所述GOA单元采用本发明所述的GOA单元；除了第一级GOA单元以外，相邻两级GOA单元中的下一级GOA单元的控制信号端与上一级GOA单元的第二输出端相连接，所述第一级GOA单元的控制信号端与一控制信号源相连接；所有所述GOA单元中奇数级GOA单元中的一GOA单元的时钟信号端与一第一时钟信号源相连接，偶数级GOA单元的时钟信号端与一第二时钟信号源相连接，其中，所述第一时钟信号源的信号与所述第二时钟信号源的信号相位相反；所有所述GOA单元的第一电压端与一第一电压源相连接，所有所述GOA单元的第二电压端与一第二电压源相连接。\n\n[0011]为实现上述目的，本发明还提供了一种显示面板，所述显示面板包括本发明所述GOA电路。\n\n[0012]本发明的优点在于，本发明所述的GOA电路可以向显示面板内部补偿电路提供负向脉冲波形，且所述GOA单元可以基于N型薄膜晶体管制备，采用的结构、电路实现方式具有普适性。\n\n附图说明\n\n[0013]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。\n\n[0014]图1A为常规的5T2C内部补偿电路示意图；\n\n[0015]图1B为图1A所示电路的时序波形。\n\n[0016]图2，本发明GOA单元的架构示意图；\n\n[0017]图3，本发明GOA单元一实施例的电路示意图；\n\n[0018]图4A，本发明GOA电路一实施例的架构示意图；\n\n[0019]图4B为图4A所示电路的工作时序图；\n\n[0020]图5为图4A所示电路的输出波形仿真图。\n\n具体实施方式\n\n[0021]下面详细描述本发明的实施方式，所述实施方式的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。此外，本发明在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。\n\n[0022]请参阅图2，本发明GOA单元的架构示意图。所述GOA单元20包括一上拉模块21、一上拉维持模块22、一反相模块23、一下拉维持模块24以及一下拉模块25。\n\n[0023]具体的，所述上拉模块21与一时钟信号端CK、一控制信号端Cout(n-1)以及一第一节点Qb相连接，用于在所述时钟信号端CK的一第一电位信号的控制下，将所述控制信号端Cout(n-1)的信号输出至所述第一节点Qb。所述控制信号端Cout(n-1)接收的信号可以为一控制信号源STV提供的信号，或为级联的GOA单元中的上一级GOA单元的第二输出端Cout(n-1)输出的信号。其中，n为大于1的正整数。其中，所述时钟信号端CK的第一电位信号为高电位(电位高于一预设电位值)信号。例如，当所述上拉模块21在所述时钟信号端CK的高电位信号的控制下导通时，所述控制信号端Cout(n-1)的信号为高电位，则所述第一节点Qb的信号为高电位；所述控制信号端Cout(n-1)的信号为低电位，则所述第一节点Qb的信号为低电位。\n\n[0024]所述上拉维持模块22与一第一电压端VGH、一第一输出端G(n)、一第二输出端Cout(n)以及所述第一节点Qb相连接，用于在所述第一节点Qb的控制下，将所述第一电压端VGH的信号输出至所述第一输出端G(n)以及所述第二输出端Cout(n)。其中，所述第一电压端VGH提供高电位信号(电位高于一预设电位值)。例如，当所述上拉维持模块22在所述第一节点Qb的控制下导通时，所述第一电压端VGH的高电位信号通过所述上拉维持模块22传递到所述第一输出端G(n)以及所述第二输出端Cout(n)，使其输出高电位信号。其中，所述第一输出端G(n)以及所述第二输出端Cout(n)输出的信号相同，所述第一输出端G(n)输出的信号输入显示面板内，所述第二输出端Cout(n)输出的信号输入级联的GOA单元中的下一级GOA单元的控制信号端Cout(n+1)。\n\n[0025]所述反相模块23与一第二电压端VGL、一第二节点Q、所述第一电压端VGH以及所述第一节点Qb相连接，用于在所述第一节点Qb的控制下，将所述第一电压端VGH或所述第二电压端VGL的信号输出至所述第二节点Q。其中，所述第二电压端VGL提供低电位信号(电位低于一预设电位值)。例如，当所述第一节点Qb为低电位时，所述第一电压端VGH的高电位信号通过所述反相模块23传递到所述第二节点Q，使其输出高电位信号；当所述第一节点Qb为高电位时，所述第二电压端VGL的低电位信号通过所述反相模块23传递到所述第二节点Q，使其输出低电位信号。\n\n[0026]所述下拉维持模块24与所述第二电压端VGL、所述第二节点Q以及所述第一节点Qb相连接，用于在所述第二节点Q的控制下，将所述第二电压端VGL的信号输出至所述第一节点Qb。例如，当所述第二节点Q为高电位时，所述第二电压端VGL的低电位信号通过所述下拉维持模块24传递到所述第一节点Qb，使其维持低电位。\n\n[0027]所述下拉模块25与所述时钟信号端CK、所述第二节点Q、所述第一输出端G(n)以及所述第二输出端Cout(n)相连接，用于在所述第二节点Q的控制下，将所述时钟信号端CK的一第二电位信号输出至所述第一输出端G(n)以及所述第二输出端Cout(n)。其中，所述时钟信号端CK的第二电位信号为低电位(电位低于一预设电位值)信号。例如，当所述时钟信号端CK输出低电位信号时，所述第一节点Qb维持低电位；此时当所述第二节点Q为高电位时，所述时钟信号端CK的低电位信号通过所述下拉模块25传递到所述第一输出端G(n)以及所述第二输出端Cout(n)，拉低其电位，从而使得所述第一输出端G(n)向显示面板内部补偿电路提供负向脉冲波形。其中，所述第一节点Qb的信号与所述第二节点Q的信号相位相反。\n\n[0028]优选的，所述GOA单元可以基于N型薄膜晶体管制备，从而可以实现采用具有普适性结构、电路实现方式，向显示面板内部补偿电路提供负向脉冲波形。\n\n[0029]请参阅图3，本发明GOA单元一实施例的电路示意图。\n\n[0030]在本实施例中，所述上拉模块21包括：一第一晶体管T31；所述第一晶体管T31的栅极与所述时钟信号端CK相连接，其第一极与所述控制信号端Cout(n-1)相连接，其第二极与所述第一节点Qb相连接。当所述时钟信号端CK输出高电位信号时，控制所述第一晶体管T31导通，所述控制信号端Cout(n-1)的信号通过所述第一晶体管T31传递至所述第一节点Qb。若所述控制信号端Cout(n-1)的信号为高电位，则所述第一节点Qb的信号为高电位；若所述控制信号端Cout(n-1)的信号为低电位，则所述第一节点Qb的信号为低电位。\n\n[0031]在本实施例中，所述上拉维持模块22包括：一第二晶体管T32以及一第三晶体管T33；所述第二晶体管T32的栅极与所述第一节点Qb相连接，其第一极与所述第一输出端G(n)相连接，其第二极与所述第一电压端VGH相连接；所述第三晶体管T33的栅极与所述第一节点Qb相连接，其第一极与所述第二输出端Cout(n)相连接，其第二极与所述第一电压端VGH相连接。其中，所述第一电压端VGH提供直流高压信号(电压高于一预设电压值)。在所述第一节点Qb输出高电位信号时，所述第二晶体管T32以及第三晶体管T33均导通；所述直流高压信号通过所述第二晶体管T32传递到所述第一输出端G(n)，使其输出高电位信号；所述直流高压信号同时通过所述第三晶体管T33传递到所述第二输出端Cout(n)，使其输出高电位信号。在其它实施例中，所述上拉维持模块22也可以仅采用一个晶体管，该晶体管的栅极与所述第一节点Qb相连接，其第一极同时与所述第一输出端G(n)及所述第二输出端Cout(n)相连接，其第二极与所述第一电压端VGH相连接，以在所述第一节点Qb的控制下，将所述第一电压端VGH的信号同时输出至所述第一输出端G(n)以及所述第二输出端Cout(n)。\n\n[0032]在本实施例中，所述反相模块23包括：一第四晶体管T34、一第五晶体管T35、一第六晶体管T36以及一第七晶体管T37。所述第四晶体管T34的栅极与所述第一节点Qb相连接，其第一极与所述第二电压端VGL相连接，其第二极连接所述第六晶体管T36的第一极以及所述第七晶体管T37的栅极；所述第五晶体管T35的栅极与所述第一节点Qb相连接，其第一极与所述第二电压端VGL相连接，其第二极与所述第二节点Q相连接；所述第六晶体管T36的栅极和第二极均与所述第一电压端VGH相连接；所述第七晶体管T37的第二极与所述第一电压端VGH相连接。其中，所述第二电压端VGL提供直流低压信号(电压低于一预设电压值)。在所述第一节点Qb输出低电位信号时，所述第四晶体管T34、所述第五晶体管T35均关闭，所述直流高压信号通过所述第六晶体管T36、所述第七晶体管T37拉高所述第二节点Q的电位，使其输出高电位信号；在所述第一节点Qb输出高电位信号时，所述第四晶体管T34、所述第五晶体管T35均导通，所述直流低压信号通过所述第四晶体管T34、所述第五晶体管T35拉低所述第二节点Q的电位，使其输出低电位信号。\n\n[0033]在本实施例中，所述下拉维持模块24包括：一第八晶体管T38；所述第八晶体管T38的栅极与所述第二节点Q相连接，其第一极与所述第二电压端VGL相连接，其第二极与所述第一节点Qb相连接。当所述第二节点Q为高电位时，所述第八晶体管T38导通，所述直流低压信号通过所述第八晶体管T38传递到所述第一节点Qb，使其维持低电位。\n\n[0034]在本实施例中，所述下拉模块25包括：一第九晶体管T39以及一第十晶体管T30；所述第九晶体管T39的栅极与所述第二节点Q相连接，其第一极与所述时钟信号端CK相连接，其第二极与所述第一输出端G(n)相连接；所述第十晶体管T30的栅极与所述第二节点Q相连接，其第一极与所述时钟信号端CK相连接，其第二极与所述第二输出端Cout(n)相连接。当所述时钟信号端CK输出低电位信号时，所述第一节点Qb维持低电位；此时当所述第二节点Q为高电位时，所述第九晶体管T39、所述第十晶体管T30均导通，所述时钟信号端CK的低电位信号通过所述第九晶体管T39传递到所述第一输出端G(n)，拉低其电位，从而使得所述第一输出端G(n)向显示面板内部补偿电路提供负向脉冲波形；所述时钟信号端CK的低电位信号通过所述第十晶体管T30传递到所述第二输出端Cout(n)，拉低其电位。在其它实施例中，所述下拉模块25也可以仅采用一个晶体管，该晶体管的栅极与所述第二节点Q相连接，其第一极与所述时钟信号端CK相连接，其第二极同时与所述第一输出端G(n)及所述第二输出端Cout(n)相连接，以在所述第二节点Q的控制下，将所述时钟信号端CK的第二电位信号同时输出至所述第一输出端G(n)以及所述第二输出端Cout(n)。\n\n[0035]优选的，上述第一～第十晶体管均采用N型薄膜晶体管。因此，当将上述GOA单元级联构成GOA电路时，可以向显示面板内部补偿电路提供负向脉冲波形，且结构、电路实现方式具有普适性。\n\n[0036]请一并参阅图4A-图4B，其中，图4A为本发明GOA电路一实施例的架构示意图，图4B为图4A所示电路的工作时序图。\n\n[0037]所述GOA电路包括级联的多个GOA单元，所述GOA单元采用本发明上述GOA单元；如图4A所示，以n+1个GOA单元级联为例进行说明，其中n为大于1的正整数。具体的，除了第一级GOA单元GOA(1)以外，相邻两级GOA单元中的下一级GOA单元GOA(n)的控制信号端Cout(n-1)与上一级GOA单元GOA(n-1)的第二输出端Cout(n-1)相连接；所述第一级GOA单元GOA(1)的控制信号端STV与一控制信号源STV1相连接。即所述GOA电路的最初一级GOA单元需要输入由控制信号源STV1提供的启动信号代替级传信号，作为GOA单元开启信号，之后的GOA单元由第二输出端Cout(n)输出的信号完成级联。所有所述GOA单元中奇数级GOA单元的时钟信号端CK与一第一时钟信号源CK1相连接，偶数级GOA单元的时钟信号端CK与一第二时钟信号源CK2相连接，其中，所述第一时钟信号源CK1的信号与所述第二时钟信号源CK2的信号相位相反。所有所述GOA单元的第一电压端VGH与一第一电压源VGH1相连接，所有所述GOA单元的第二电压端VGL与一第二电压源VGL1相连接。\n\n[0038]以下采用如图4B所示工作时序驱动如图4A所述GOA电路。将所述GOA电路的运行分为1、2、3共计三个阶段。\n\n[0039]阶段1：时钟信号端CK接收高电位，第一晶体管T31导通，控制信号源STV1通过第一晶体管T31对第一节点Qb输入低电位；第二晶体管T32、第三晶体管T33、第四晶体管T34、第五晶体管T35均关闭，第六晶体管T36、第七晶体管T37导通，第二节点Q经由第七晶体管T37被直流高压信号VGH1拉到高电位；第八晶体管T38、第九晶体管T39、第十晶体管T30均导通，时钟信号端CK的高电位维持第一输出端G(n)和第二输出端Cout(n)的高电位。\n\n[0040]阶段2：时钟信号端CK接收的电位由高电位变为低电位，第一晶体管T31关闭；由于第二节点Q维持高电位，第八晶体管T38、第九晶体管T39、第十晶体管T30维持导通，第一节点Qb由直流低压信号VGL1通过第八晶体管T38继续维持低电位；时钟信号端CK的低电位通过第九晶体管T39、第十晶体管T30分别向第一输出端G(n)和第二输出端Cout(n)输出低电位，使得第一输出端G(n)输出负向脉冲波形。\n\n[0041]阶段3：时钟信号端CK接收的电位由低电位变为高电位，第一晶体管T31导通，第一节点Qb被上一级GOA单元的第二输出端Cout(n-1)输出的高电位信号上拉到高电位；第二晶体管T32、第三晶体管T33、第四晶体管T34、第五晶体管T35均导通，第二节点Q被直流低压信号VGL1拉为低电位，第一输出端G(n)和第二输出端Cout(n)被直流高压信号VGH1拉为高电位；之后第一晶体管T31不断被时钟信号端CK的高电位信号打开，以维持第一节点Qb的高电位，保证GOA单元长时间输出高电位。\n\n[0042]请参阅图5，其为图4A所示电路的输出波形仿真图。图中示意出61级GOA单元的三帧输出波形仿真图，由图5可以看出过了第一帧之后，每一级GOA单元都能正常的输出负向脉冲波形。\n\n[0043]基于同一发明构思，本发明还提供了一种显示面板，包括如上所述的GOA电路，其具有与前述实施例提供的GOA电路相同的结构和有益效果。由于前述实施例已经对GOA电路的结构和有益效果进行了详细的描述，此处不再赘述。\n\n[0044]需要说明的是，在本发明实施例中，所述显示面板具体至少可以包括液晶显示面板Micro-LED显示面板、OLED显示面板或AMOLED显示面板。例如，所述显示面板可以应用至液晶显示器、液晶电视、数码相框、手机或平板电脑等任何具有显示功能的产品或者部件中。\n\n[0045]以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其是涉及一种可以产生内部补偿所需要的负向脉冲时序的GOA单元、GOA电路及显示面板。\n\n背景技术\n\n[0002]随着显示面板的发展，人们追求更大屏幕、更高的分辨率、更刺激的视觉效果，这无疑对面板制程、材料以及工艺提出了更高的要求。OLED(organic light emittingdiode，有机电致发光二极管)显示面板是一种自发光的显示技术，具有视角宽、对比度高、功耗低、色彩鲜艳等优点。由于这些优势，AMOLED(active matrix organic lightemitting diode，有源有机电致发光二极管)显示面板在显示行业所占的比重正在逐年增加。TFT(Thin Film Transistor，薄膜晶体管)具有高空间利用效率、低消耗功率、无辐射以及低电磁干扰等优越特性。GOA(Gate Driver on Array，阵列基板栅极驱动)技术，是利用现有TFT的阵列(Array)基板制程将栅极驱动电路制作在阵列基板上，实现对栅极逐行扫描的驱动方式的一项技术。\n\n[0003]由于GOA电路代替了外接芯片，从而可减少显示装置的制作程序，降低成本；同时，可以节省栅极芯片(Gate IC)，提高显示装置的集成度。IGZO(indium gallium zincoxide，铟镓锌氧化物)是用于新一代薄膜晶体管技术中的沟道层材料。IGZO由于迁移率高，均匀性好等优点而在大尺寸AMOLED显示面板中广泛使用。但由于其稳定性不佳，因此AMOLED显示面板上通常会使用补偿电路以保证显示面板的亮度均匀性。\n\n[0004]请参阅图1A-图1B，其中，图1A为常规的5T2C内部补偿电路示意图，图1B为图1A所示电路的时序波形。\n\n[0005]如图1A所示，所述内部补偿电路包括：一第一薄膜晶体管T11、一第二薄膜晶体管T12、一第三薄膜晶体管T13、一第四薄膜晶体管T14、一第五薄膜晶体管T15，一第一电容C11以及一第二电容C12。其中，所述第一薄膜晶体管T11的栅极与一第一发光控制信号EM1相连接，其第一极连接所述第二薄膜晶体管T12的第一极，其第二极与一第一电源电压VDD相连接；所述第二薄膜晶体管T12的栅极连接所述第五薄膜晶体管T15的第一极，其第二极连接所述第三薄膜晶体管T13的第一极以及所述第四薄膜晶体管T14的第二极；所述第三薄膜晶体管T13的栅极与一第二发光控制信号EM2相连接，其第二极连接一发光二极管OLED1的阳极，所述发光二极管OLED1的阴极与一第二电源电压VSS相连接；所述第四薄膜晶体管T14的栅极与一数据读控制信号RD相连接，其第一极与一感测信号Sensing相连接；所述第五薄膜晶体管T15的栅极与一数据写控制信号WR相连接，其第二极与一数据信号Data相连接；所述第一电容C11连接在所述第二薄膜晶体管T12的栅极与其第二极之间；所述第二电容C12连接在所述第一薄膜晶体管T11的第二极与所述第二薄膜晶体管T12的第二极之间。\n\n[0006]如图1B所示，要完成AMOLED显示面板内部补偿，需要向所述内部补偿电路提供两种脉冲波形：一种为正向脉冲波形(WR/RD)，这种波形可以使用常规的IGZO_TFT的GOA电路产生；而另一种为负向脉冲波形(EM1/EM2)，这种波形通常需要使用p型的GOA电路才能正常生成，普适性不高。\n\n[0007]因此，如何实现采用具有普适性的结构、电路实现方式，产生显示面板内部补偿所需要的负向脉冲波形，成为显示面板内部补偿亟待解决的技术问题。\n\n发明内容\n\n[0008]本发明的目的在于，解决现有技术存在的问题，提供一种GOA单元、GOA电路及显示面板，可以采用具有普适性的结构、电路实现方式，产生显示面板内部补偿所需要的负向脉冲波形。\n\n[0009]为实现上述目的，本发明提供了一种GOA单元，所述GOA单元包括一上拉模块、一上拉维持模块、一反相模块、一下拉维持模块以及一下拉模块；所述上拉模块与一时钟信号端、一控制信号端以及一第一节点相连接，用于在所述时钟信号端的一第一电位信号的控制下，将所述控制信号端的信号输出至所述第一节点；所述上拉维持模块与一第一电压端、一第一输出端、一第二输出端以及所述第一节点相连接，用于在所述第一节点的控制下，将所述第一电压端的信号输出至所述第一输出端以及所述第二输出端；所述反相模块与一第二电压端、一第二节点、所述第一电压端以及所述第一节点相连接，用于在所述第一节点的控制下，将所述第一电压端或所述第二电压端的信号输出至所述第二节点；所述下拉维持模块与所述第二电压端、所述第二节点以及所述第一节点相连接，用于在所述第二节点的控制下，将所述第二电压端的信号输出至所述第一节点；所述下拉模块与所述时钟信号端、所述第二节点、所述第一输出端以及所述第二输出端相连接，用于在所述第二节点的控制下，将所述时钟信号端的一第二电位信号输出至所述第一输出端以及所述第二输出端。\n\n[0010]为实现上述目的，本发明还提供了一种GOA电路，包括：级联的多个GOA单元；所述GOA单元采用本发明所述的GOA单元；除了第一级GOA单元以外，相邻两级GOA单元中的下一级GOA单元的控制信号端与上一级GOA单元的第二输出端相连接，所述第一级GOA单元的控制信号端与一控制信号源相连接；所有所述GOA单元中奇数级GOA单元中的一GOA单元的时钟信号端与一第一时钟信号源相连接，偶数级GOA单元的时钟信号端与一第二时钟信号源相连接，其中，所述第一时钟信号源的信号与所述第二时钟信号源的信号相位相反；所有所述GOA单元的第一电压端与一第一电压源相连接，所有所述GOA单元的第二电压端与一第二电压源相连接。\n\n[0011]为实现上述目的，本发明还提供了一种显示面板，所述显示面板包括本发明所述GOA电路。\n\n[0012]本发明的优点在于，本发明所述的GOA电路可以向显示面板内部补偿电路提供负向脉冲波形，且所述GOA单元可以基于N型薄膜晶体管制备，采用的结构、电路实现方式具有普适性。\n\n附图说明\n\n[0013]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。\n\n[0014]图1A为常规的5T2C内部补偿电路示意图；\n\n[0015]图1B为图1A所示电路的时序波形。\n\n[0016]图2，本发明GOA单元的架构示意图；\n\n[0017]图3，本发明GOA单元一实施例的电路示意图；\n\n[0018]图4A，本发明GOA电路一实施例的架构示意图；\n\n[0019]图4B为图4A所示电路的工作时序图；\n\n[0020]图5为图4A所示电路的输出波形仿真图。\n\n具体实施方式\n\n[0021]下面详细描述本发明的实施方式，所述实施方式的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。此外，本发明在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。\n\n[0022]请参阅图2，本发明GOA单元的架构示意图。所述GOA单元20包括一上拉模块21、一上拉维持模块22、一反相模块23、一下拉维持模块24以及一下拉模块25。\n\n[0023]具体的，所述上拉模块21与一时钟信号端CK、一控制信号端Cout(n-1)以及一第一节点Qb相连接，用于在所述时钟信号端CK的一第一电位信号的控制下，将所述控制信号端Cout(n-1)的信号输出至所述第一节点Qb。所述控制信号端Cout(n-1)接收的信号可以为一控制信号源STV提供的信号，或为级联的GOA单元中的上一级GOA单元的第二输出端Cout(n-1)输出的信号。其中，n为大于1的正整数。其中，所述时钟信号端CK的第一电位信号为高电位(电位高于一预设电位值)信号。例如，当所述上拉模块21在所述时钟信号端CK的高电位信号的控制下导通时，所述控制信号端Cout(n-1)的信号为高电位，则所述第一节点Qb的信号为高电位；所述控制信号端Cout(n-1)的信号为低电位，则所述第一节点Qb的信号为低电位。\n\n[0024]所述上拉维持模块22与一第一电压端VGH、一第一输出端G(n)、一第二输出端Cout(n)以及所述第一节点Qb相连接，用于在所述第一节点Qb的控制下，将所述第一电压端VGH的信号输出至所述第一输出端G(n)以及所述第二输出端Cout(n)。其中，所述第一电压端VGH提供高电位信号(电位高于一预设电位值)。例如，当所述上拉维持模块22在所述第一节点Qb的控制下导通时，所述第一电压端VGH的高电位信号通过所述上拉维持模块22传递到所述第一输出端G(n)以及所述第二输出端Cout(n)，使其输出高电位信号。其中，所述第一输出端G(n)以及所述第二输出端Cout(n)输出的信号相同，所述第一输出端G(n)输出的信号输入显示面板内，所述第二输出端Cout(n)输出的信号输入级联的GOA单元中的下一级GOA单元的控制信号端Cout(n+1)。\n\n[0025]所述反相模块23与一第二电压端VGL、一第二节点Q、所述第一电压端VGH以及所述第一节点Qb相连接，用于在所述第一节点Qb的控制下，将所述第一电压端VGH或所述第二电压端VGL的信号输出至所述第二节点Q。其中，所述第二电压端VGL提供低电位信号(电位低于一预设电位值)。例如，当所述第一节点Qb为低电位时，所述第一电压端VGH的高电位信号通过所述反相模块23传递到所述第二节点Q，使其输出高电位信号；当所述第一节点Qb为高电位时，所述第二电压端VGL的低电位信号通过所述反相模块23传递到所述第二节点Q，使其输出低电位信号。\n\n[0026]所述下拉维持模块24与所述第二电压端VGL、所述第二节点Q以及所述第一节点Qb相连接，用于在所述第二节点Q的控制下，将所述第二电压端VGL的信号输出至所述第一节点Qb。例如，当所述第二节点Q为高电位时，所述第二电压端VGL的低电位信号通过所述下拉维持模块24传递到所述第一节点Qb，使其维持低电位。\n\n[0027]所述下拉模块25与所述时钟信号端CK、所述第二节点Q、所述第一输出端G(n)以及所述第二输出端Cout(n)相连接，用于在所述第二节点Q的控制下，将所述时钟信号端CK的一第二电位信号输出至所述第一输出端G(n)以及所述第二输出端Cout(n)。其中，所述时钟信号端CK的第二电位信号为低电位(电位低于一预设电位值)信号。例如，当所述时钟信号端CK输出低电位信号时，所述第一节点Qb维持低电位；此时当所述第二节点Q为高电位时，所述时钟信号端CK的低电位信号通过所述下拉模块25传递到所述第一输出端G(n)以及所述第二输出端Cout(n)，拉低其电位，从而使得所述第一输出端G(n)向显示面板内部补偿电路提供负向脉冲波形。其中，所述第一节点Qb的信号与所述第二节点Q的信号相位相反。\n\n[0028]优选的，所述GOA单元可以基于N型薄膜晶体管制备，从而可以实现采用具有普适性结构、电路实现方式，向显示面板内部补偿电路提供负向脉冲波形。\n\n[0029]请参阅图3，本发明GOA单元一实施例的电路示意图。\n\n[0030]在本实施例中，所述上拉模块21包括：一第一晶体管T31；所述第一晶体管T31的栅极与所述时钟信号端CK相连接，其第一极与所述控制信号端Cout(n-1)相连接，其第二极与所述第一节点Qb相连接。当所述时钟信号端CK输出高电位信号时，控制所述第一晶体管T31导通，所述控制信号端Cout(n-1)的信号通过所述第一晶体管T31传递至所述第一节点Qb。若所述控制信号端Cout(n-1)的信号为高电位，则所述第一节点Qb的信号为高电位；若所述控制信号端Cout(n-1)的信号为低电位，则所述第一节点Qb的信号为低电位。\n\n[0031]在本实施例中，所述上拉维持模块22包括：一第二晶体管T32以及一第三晶体管T33；所述第二晶体管T32的栅极与所述第一节点Qb相连接，其第一极与所述第一输出端G(n)相连接，其第二极与所述第一电压端VGH相连接；所述第三晶体管T33的栅极与所述第一节点Qb相连接，其第一极与所述第二输出端Cout(n)相连接，其第二极与所述第一电压端VGH相连接。其中，所述第一电压端VGH提供直流高压信号(电压高于一预设电压值)。在所述第一节点Qb输出高电位信号时，所述第二晶体管T32以及第三晶体管T33均导通；所述直流高压信号通过所述第二晶体管T32传递到所述第一输出端G(n)，使其输出高电位信号；所述直流高压信号同时通过所述第三晶体管T33传递到所述第二输出端Cout(n)，使其输出高电位信号。在其它实施例中，所述上拉维持模块22也可以仅采用一个晶体管，该晶体管的栅极与所述第一节点Qb相连接，其第一极同时与所述第一输出端G(n)及所述第二输出端Cout(n)相连接，其第二极与所述第一电压端VGH相连接，以在所述第一节点Qb的控制下，将所述第一电压端VGH的信号同时输出至所述第一输出端G(n)以及所述第二输出端Cout(n)。\n\n[0032]在本实施例中，所述反相模块23包括：一第四晶体管T34、一第五晶体管T35、一第六晶体管T36以及一第七晶体管T37。所述第四晶体管T34的栅极与所述第一节点Qb相连接，其第一极与所述第二电压端VGL相连接，其第二极连接所述第六晶体管T36的第一极以及所述第七晶体管T37的栅极；所述第五晶体管T35的栅极与所述第一节点Qb相连接，其第一极与所述第二电压端VGL相连接，其第二极与所述第二节点Q相连接；所述第六晶体管T36的栅极和第二极均与所述第一电压端VGH相连接；所述第七晶体管T37的第二极与所述第一电压端VGH相连接。其中，所述第二电压端VGL提供直流低压信号(电压低于一预设电压值)。在所述第一节点Qb输出低电位信号时，所述第四晶体管T34、所述第五晶体管T35均关闭，所述直流高压信号通过所述第六晶体管T36、所述第七晶体管T37拉高所述第二节点Q的电位，使其输出高电位信号；在所述第一节点Qb输出高电位信号时，所述第四晶体管T34、所述第五晶体管T35均导通，所述直流低压信号通过所述第四晶体管T34、所述第五晶体管T35拉低所述第二节点Q的电位，使其输出低电位信号。\n\n[0033]在本实施例中，所述下拉维持模块24包括：一第八晶体管T38；所述第八晶体管T38的栅极与所述第二节点Q相连接，其第一极与所述第二电压端VGL相连接，其第二极与所述第一节点Qb相连接。当所述第二节点Q为高电位时，所述第八晶体管T38导通，所述直流低压信号通过所述第八晶体管T38传递到所述第一节点Qb，使其维持低电位。\n\n[0034]在本实施例中，所述下拉模块25包括：一第九晶体管T39以及一第十晶体管T30；所述第九晶体管T39的栅极与所述第二节点Q相连接，其第一极与所述时钟信号端CK相连接，其第二极与所述第一输出端G(n)相连接；所述第十晶体管T30的栅极与所述第二节点Q相连接，其第一极与所述时钟信号端CK相连接，其第二极与所述第二输出端Cout(n)相连接。当所述时钟信号端CK输出低电位信号时，所述第一节点Qb维持低电位；此时当所述第二节点Q为高电位时，所述第九晶体管T39、所述第十晶体管T30均导通，所述时钟信号端CK的低电位信号通过所述第九晶体管T39传递到所述第一输出端G(n)，拉低其电位，从而使得所述第一输出端G(n)向显示面板内部补偿电路提供负向脉冲波形；所述时钟信号端CK的低电位信号通过所述第十晶体管T30传递到所述第二输出端Cout(n)，拉低其电位。在其它实施例中，所述下拉模块25也可以仅采用一个晶体管，该晶体管的栅极与所述第二节点Q相连接，其第一极与所述时钟信号端CK相连接，其第二极同时与所述第一输出端G(n)及所述第二输出端Cout(n)相连接，以在所述第二节点Q的控制下，将所述时钟信号端CK的第二电位信号同时输出至所述第一输出端G(n)以及所述第二输出端Cout(n)。\n\n[0035]优选的，上述第一～第十晶体管均采用N型薄膜晶体管。因此，当将上述GOA单元级联构成GOA电路时，可以向显示面板内部补偿电路提供负向脉冲波形，且结构、电路实现方式具有普适性。\n\n[0036]请一并参阅图4A-图4B，其中，图4A为本发明GOA电路一实施例的架构示意图，图4B为图4A所示电路的工作时序图。\n\n[0037]所述GOA电路包括级联的多个GOA单元，所述GOA单元采用本发明上述GOA单元；如图4A所示，以n+1个GOA单元级联为例进行说明，其中n为大于1的正整数。具体的，除了第一级GOA单元GOA(1)以外，相邻两级GOA单元中的下一级GOA单元GOA(n)的控制信号端Cout(n-1)与上一级GOA单元GOA(n-1)的第二输出端Cout(n-1)相连接；所述第一级GOA单元GOA(1)的控制信号端STV与一控制信号源STV1相连接。即所述GOA电路的最初一级GOA单元需要输入由控制信号源STV1提供的启动信号代替级传信号，作为GOA单元开启信号，之后的GOA单元由第二输出端Cout(n)输出的信号完成级联。所有所述GOA单元中奇数级GOA单元的时钟信号端CK与一第一时钟信号源CK1相连接，偶数级GOA单元的时钟信号端CK与一第二时钟信号源CK2相连接，其中，所述第一时钟信号源CK1的信号与所述第二时钟信号源CK2的信号相位相反。所有所述GOA单元的第一电压端VGH与一第一电压源VGH1相连接，所有所述GOA单元的第二电压端VGL与一第二电压源VGL1相连接。\n\n[0038]以下采用如图4B所示工作时序驱动如图4A所述GOA电路。将所述GOA电路的运行分为1、2、3共计三个阶段。\n\n[0039]阶段1：时钟信号端CK接收高电位，第一晶体管T31导通，控制信号源STV1通过第一晶体管T31对第一节点Qb输入低电位；第二晶体管T32、第三晶体管T33、第四晶体管T34、第五晶体管T35均关闭，第六晶体管T36、第七晶体管T37导通，第二节点Q经由第七晶体管T37被直流高压信号VGH1拉到高电位；第八晶体管T38、第九晶体管T39、第十晶体管T30均导通，时钟信号端CK的高电位维持第一输出端G(n)和第二输出端Cout(n)的高电位。\n\n[0040]阶段2：时钟信号端CK接收的电位由高电位变为低电位，第一晶体管T31关闭；由于第二节点Q维持高电位，第八晶体管T38、第九晶体管T39、第十晶体管T30维持导通，第一节点Qb由直流低压信号VGL1通过第八晶体管T38继续维持低电位；时钟信号端CK的低电位通过第九晶体管T39、第十晶体管T30分别向第一输出端G(n)和第二输出端Cout(n)输出低电位，使得第一输出端G(n)输出负向脉冲波形。\n\n[0041]阶段3：时钟信号端CK接收的电位由低电位变为高电位，第一晶体管T31导通，第一节点Qb被上一级GOA单元的第二输出端Cout(n-1)输出的高电位信号上拉到高电位；第二晶体管T32、第三晶体管T33、第四晶体管T34、第五晶体管T35均导通，第二节点Q被直流低压信号VGL1拉为低电位，第一输出端G(n)和第二输出端Cout(n)被直流高压信号VGH1拉为高电位；之后第一晶体管T31不断被时钟信号端CK的高电位信号打开，以维持第一节点Qb的高电位，保证GOA单元长时间输出高电位。\n\n[0042]请参阅图5，其为图4A所示电路的输出波形仿真图。图中示意出61级GOA单元的三帧输出波形仿真图，由图5可以看出过了第一帧之后，每一级GOA单元都能正常的输出负向脉冲波形。\n\n[0043]基于同一发明构思，本发明还提供了一种显示面板，包括如上所述的GOA电路，其具有与前述实施例提供的GOA电路相同的结构和有益效果。由于前述实施例已经对GOA电路的结构和有益效果进行了详细的描述，此处不再赘述。\n\n[0044]需要说明的是，在本发明实施例中，所述显示面板具体至少可以包括液晶显示面板Micro-LED显示面板、OLED显示面板或AMOLED显示面板。例如，所述显示面板可以应用至液晶显示器、液晶电视、数码相框、手机或平板电脑等任何具有显示功能的产品或者部件中。\n\n[0045]以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10679, 23733, '技术领域\n\n[0001]本发明涉及显示技术领域，特别涉及一种MicroLED芯片的转移方法。\n\n背景技术\n\n[0002]在现有技术中，为了将MicroLED转移到TFT基板上以实现可靠的电性连接。\n\n[0003]如图1所示，通常采用在转移MicroLED 6’前，在TFT基板4’上贴合整面的ACF胶3’，转移完MicroLED 6’后通过加压和加热使MicroLED 6’粘合在TFT基板4’上，使MicroLED的电极2’与TFT的电极5’实现对位。\n\n[0004]然而，MicroLED 6’与TFT基板4’的贴合面积仅占像素显示区的很小部分，而该方法需要在TFT基板4’的整面上铺满包含导电粒子31’的ACF胶3’，因此，此方式显然存在大量材料的浪费。\n\n[0005]同时，由于TFT基板4’不平坦还会导致污染压头的现象。\n\n[0006]为解决上述MicroLED转移工艺中存在ACF胶用量大所导致的浪费问题及污染问题，本领域中进一步提出了一种如公开号CN107768487A公开的巨量转移电子元件的方法。\n\n[0007]该方法是首先提供晶圆及以矩阵方式排列于基板表面上的电子元件。接着，将晶圆贴附于暂时性固定层。随后，切割晶圆，以使晶圆形成多个板块。各板块包括至少部分电子元件以及子基板。扩张暂时性固定层，以使暂时性固定层上的这些板块随着暂时性固定层扩张而彼此分离。接着，将这些板块中的至少一部分选定为预定接合部分，将此预定接合部分中的每一板块分次地转移于承载基板，以使在预定接合部分中的这些电子元件接合于承载基板。最后，移除这些板块的子基板。\n\n[0008]然而，该种改性的方法依然存在各种步骤复杂，TFT不平坦等问题。\n\n[0009]因此，还有必要提供一种新的MicroLED芯片的转移方法，以克服上述缺陷。\n\n发明内容\n\n[0010]本发明的目的在于提供一种预先胶合ACF的MicroLED转移方法。不但可以节省ACF胶的使用量，而且避免由于TFT不平坦导致的污染压头的现象。\n\n[0011]为了达到上述目的，本发明提供一种MicroLED芯片的转移方法，将包含导电粒子的ACF胶预先贴合于MicroLED晶圆上，再通过转移MicroLED芯片到TFT基板上，使MicroLED的电极与TFT的电极实现对位，随后通过对压头的加热和压力实现MicroLED的电极与TFT的电极的电性连接。本发明方法使得ACF胶仅位于MicroLED晶圆下表面，可以有避免由于TFT基板不平坦问题导致在非LED绑定(bonding)，从而污染压头的现象。\n\n[0012]本发明具体步骤如下：\n\n[0013]S1制作MicroLEDs晶圆，在一所述晶圆包括基板以及排列于该基板的表面上的MicroLED芯片，所述MicroLED芯片形成金属电极，在所述MicroLED芯片电极侧胶合ACF胶；\n\n[0014]S2将MicroLEDs晶圆通过ACF胶侧粘合到临时基板上；\n\n[0015]S3剥离MicroLEDs晶圆基板，将MicroLEDs晶圆切割为MicroLED单芯片；\n\n[0016]S4将MicroLED单芯片与临时基板解胶，转移MicroLED单芯片至TFT基板。\n\n[0017]本发明先在晶圆(晶片)上先形成异方性导电膜，然后再进行切割，以获得具有ACF膜的MicroLED单芯片结构，并进行后续的转移步骤。\n\n[0018]在本发明的一实施例中，上述制作MicroLEDs晶圆步骤中，所述晶圆基板是蓝宝石基板。\n\n[0019]在本发明的一实施例中，上述制作MicroLEDs晶圆步骤中，所述晶圆基板是氮化镓基板。\n\n[0020]在本发明的一实施例中，上述制作MicroLEDs晶圆步骤中，所述晶圆基板是氮化铝基板。\n\n[0021]在本发明的一实施例中，上述制作MicroLEDs晶圆步骤中，所述晶圆基板是硅基板。\n\n[0022]在本发明的一实施例中，上述制作MicroLEDs晶圆步骤中，所述晶圆基板是砷化镓基板。\n\n[0023]在本发明的一实施例中，上述制作MicroLEDs晶圆步骤中，所述晶圆基板是碳化硅基板。\n\n[0024]在本发明的一实施例中，上述剥离MicroLEDs晶圆基板，是通过在蓝宝石侧照射激光，实现蓝宝石基板剥离。\n\n[0025]在本发明的一实施例中，上述将MicroLED单芯片与临时基板解胶步骤中，所述临时基板解胶是通过紫外光照射解胶。\n\n[0026]在本发明的一实施例中，上述将MicroLED单芯片与临时基板解胶步骤中，晶圆是2吋或4吋。\n\n[0027]基于上述，在本发明的所述MicroLED转移方法中，透过在粘合MicroLEDs晶圆与临时基板前，在MicroLED芯片电极侧胶合ACF胶，因此本发明实施例中的MicroLED转移方法，大量节省ACF胶的使用量，提升ACF材料的利用率，避免材料浪费，且由于在ACF仅位于MicroLED下表面，可以有避免由于TFT地形不平坦问题导致污染压头的现象。\n\n附图说明\n\n[0028]图1是现有技术中MicroLED转移到TFT基板上的结构示意图；\n\n[0029]图2是根据本发明一实施例的MicroLED转移方法的流程示意图；\n\n[0030]图3A至图3E是图2所示MicroLED转移方法的步骤流程中对应的结构示意图。\n\n具体实施方式\n\n[0031]以下，结合具体实施方式，对本发明的技术进行详细描述。应当知道的是，以下具体实施方式仅用于帮助本领域技术人员理解本发明，而非对本发明的限定。\n\n[0032]如图2是本发明所述MicroLED转移方法的流程示意图；图3A至图3E是与图2所示MicroLED转移方法的步骤流程对应的结构示意图。\n\n[0033]如图2所示，在本实施例中提供一种MicroLED转移方法包括：步骤S1：制作MicroLEDs晶圆的步骤：步骤S2：将所述MicroLEDs晶圆1粘合到临时基板上的步骤：步骤S3：剥离MicroLEDs晶圆基板的步骤；以及，步骤S4：获得MicroLED芯片的步骤。\n\n[0034]在所述步骤S1中，如图3A所示，首先在一基板S上制作MicroLEDs晶圆1，并在所述MicroLEDs晶圆1上设置用于形成MicroLED芯片的电极2。随后，在所述电极2上胶合ACF胶3。\n\n[0035]在本实施例中，所述MicroLEDs晶圆1是2吋或4吋，但本发明并不以晶圆1的大小为限制。所述MicroLEDs晶元1的基板S，可以是，例如：蓝宝石基板(Sapphire Substrate)、氮化镓基板(Gallium Nitride Substrate)、氮化铝基板(Aluminum Nitride Substrate)、硅基板(Silicon Substrate)、砷化镓基板(Gallium Arsenide Substrate)或碳化硅基板(Silicon Carbide Substrate)等。在本实施例中采用蓝宝石基板。\n\n[0036]所述MicroLEDs晶圆1的制作过程包括：首先通过金属有机物化学气相沉积设备在蓝宝石(Al2O3)衬底上制备出MicroLED的各类晶层，如：GaN buffer层/n型GaN,、多量子阱层(MQW)发光层/P型GaN；再在晶圆上形成ITO电流扩展层以及金属电极层，通过ICP(感应耦合等离子体蚀刻)工艺制作电极。最终，如图3A所示，获得具有电极2的MicroLEDs晶圆1，并在具有电极的MicroLEDs晶圆1制作完成后，在电极2侧胶合ACF胶3。\n\n[0037]在所述步骤S2中，如图2和图3B所示，将所述MicroLEDs晶圆1通过ACF胶3侧粘合到临时基板7上。\n\n[0038]在所述步骤S3中。如图2和图3C所示，利用激光剥离技术(Laser Lift-Off)，通过在所述基板S侧照射266nm激光，使处于基板S与GaN界面处的GaN气化，从而剥离所述基板S。此时，如图3C所示，通过所述ACF胶3粘合在临时基板7上的仅为具有电极2的MicroLEDs晶圆1，而没有所述基板S。\n\n[0039]接着，在所述步骤S3中，如图2和图3D所示，通过切割，将所述MicroLEDs晶圆1切割为多个MicroLED单芯片6。此时，所有MicroLED单芯片6通过所述ACF胶3粘合在临时基板7。并且，如图3D所示，所述ACF胶3也被一并切割。\n\n[0040]在所述步骤S4中，在转移前，通过紫外光(ultraviolet)照射，实现MicroLED单芯片与临时基板解胶，即可通过转移设备的转移头把所述MicroLED单芯片6从临时基板7上取下并取放到一TFT基板4上。从而，如图3E所示，利用ACF胶3将MicroLED单芯片6的电极2与一TFT基板4的电极5实现对位，再通过对压头的加热和压力，实现MicroLED单芯片6的电极2与所述TFT基板4上的电极5电气连接。\n\n[0041]本领域技术人员可以理解的是，本文中术语MicroLED指示尺寸小于100um的LED，又称uLED；术语ACF是指异方性导电胶膜，是Anisotropic Conductive Film的缩写。\n\n[0042]基于上述，在本发明的所述MicroLED转移方法中，透过在粘合MicroLEDs晶圆与临时基板前，在MicroLED芯片电极侧胶合ACF胶，因此本发明实施例中的MicroLED转移方法，大量节省ACF胶的使用量，提升ACF材料的利用率，避免材料浪费，且由于在ACF仅位于MicroLED下表面，可以有避免由于TFT地形不平坦问题导致污染压头的现象。\n\n[0043]发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。', '技术领域\n\n[0001]本发明涉及显示技术领域，特别涉及一种MicroLED芯片的转移方法。\n\n背景技术\n\n[0002]在现有技术中，为了将MicroLED转移到TFT基板上以实现可靠的电性连接。\n\n[0003]如图1所示，通常采用在转移MicroLED 6’前，在TFT基板4’上贴合整面的ACF胶3’，转移完MicroLED 6’后通过加压和加热使MicroLED 6’粘合在TFT基板4’上，使MicroLED的电极2’与TFT的电极5’实现对位。\n\n[0004]然而，MicroLED 6’与TFT基板4’的贴合面积仅占像素显示区的很小部分，而该方法需要在TFT基板4’的整面上铺满包含导电粒子31’的ACF胶3’，因此，此方式显然存在大量材料的浪费。\n\n[0005]同时，由于TFT基板4’不平坦还会导致污染压头的现象。\n\n[0006]为解决上述MicroLED转移工艺中存在ACF胶用量大所导致的浪费问题及污染问题，本领域中进一步提出了一种如公开号CN107768487A公开的巨量转移电子元件的方法。\n\n[0007]该方法是首先提供晶圆及以矩阵方式排列于基板表面上的电子元件。接着，将晶圆贴附于暂时性固定层。随后，切割晶圆，以使晶圆形成多个板块。各板块包括至少部分电子元件以及子基板。扩张暂时性固定层，以使暂时性固定层上的这些板块随着暂时性固定层扩张而彼此分离。接着，将这些板块中的至少一部分选定为预定接合部分，将此预定接合部分中的每一板块分次地转移于承载基板，以使在预定接合部分中的这些电子元件接合于承载基板。最后，移除这些板块的子基板。\n\n[0008]然而，该种改性的方法依然存在各种步骤复杂，TFT不平坦等问题。\n\n[0009]因此，还有必要提供一种新的MicroLED芯片的转移方法，以克服上述缺陷。\n\n发明内容\n\n[0010]本发明的目的在于提供一种预先胶合ACF的MicroLED转移方法。不但可以节省ACF胶的使用量，而且避免由于TFT不平坦导致的污染压头的现象。\n\n[0011]为了达到上述目的，本发明提供一种MicroLED芯片的转移方法，将包含导电粒子的ACF胶预先贴合于MicroLED晶圆上，再通过转移MicroLED芯片到TFT基板上，使MicroLED的电极与TFT的电极实现对位，随后通过对压头的加热和压力实现MicroLED的电极与TFT的电极的电性连接。本发明方法使得ACF胶仅位于MicroLED晶圆下表面，可以有避免由于TFT基板不平坦问题导致在非LED绑定(bonding)，从而污染压头的现象。\n\n[0012]本发明具体步骤如下：\n\n[0013]S1制作MicroLEDs晶圆，在一所述晶圆包括基板以及排列于该基板的表面上的MicroLED芯片，所述MicroLED芯片形成金属电极，在所述MicroLED芯片电极侧胶合ACF胶；\n\n[0014]S2将MicroLEDs晶圆通过ACF胶侧粘合到临时基板上；\n\n[0015]S3剥离MicroLEDs晶圆基板，将MicroLEDs晶圆切割为MicroLED单芯片；\n\n[0016]S4将MicroLED单芯片与临时基板解胶，转移MicroLED单芯片至TFT基板。\n\n[0017]本发明先在晶圆(晶片)上先形成异方性导电膜，然后再进行切割，以获得具有ACF膜的MicroLED单芯片结构，并进行后续的转移步骤。\n\n[0018]在本发明的一实施例中，上述制作MicroLEDs晶圆步骤中，所述晶圆基板是蓝宝石基板。\n\n[0019]在本发明的一实施例中，上述制作MicroLEDs晶圆步骤中，所述晶圆基板是氮化镓基板。\n\n[0020]在本发明的一实施例中，上述制作MicroLEDs晶圆步骤中，所述晶圆基板是氮化铝基板。\n\n[0021]在本发明的一实施例中，上述制作MicroLEDs晶圆步骤中，所述晶圆基板是硅基板。\n\n[0022]在本发明的一实施例中，上述制作MicroLEDs晶圆步骤中，所述晶圆基板是砷化镓基板。\n\n[0023]在本发明的一实施例中，上述制作MicroLEDs晶圆步骤中，所述晶圆基板是碳化硅基板。\n\n[0024]在本发明的一实施例中，上述剥离MicroLEDs晶圆基板，是通过在蓝宝石侧照射激光，实现蓝宝石基板剥离。\n\n[0025]在本发明的一实施例中，上述将MicroLED单芯片与临时基板解胶步骤中，所述临时基板解胶是通过紫外光照射解胶。\n\n[0026]在本发明的一实施例中，上述将MicroLED单芯片与临时基板解胶步骤中，晶圆是2吋或4吋。\n\n[0027]基于上述，在本发明的所述MicroLED转移方法中，透过在粘合MicroLEDs晶圆与临时基板前，在MicroLED芯片电极侧胶合ACF胶，因此本发明实施例中的MicroLED转移方法，大量节省ACF胶的使用量，提升ACF材料的利用率，避免材料浪费，且由于在ACF仅位于MicroLED下表面，可以有避免由于TFT地形不平坦问题导致污染压头的现象。\n\n附图说明\n\n[0028]图1是现有技术中MicroLED转移到TFT基板上的结构示意图；\n\n[0029]图2是根据本发明一实施例的MicroLED转移方法的流程示意图；\n\n[0030]图3A至图3E是图2所示MicroLED转移方法的步骤流程中对应的结构示意图。\n\n具体实施方式\n\n[0031]以下，结合具体实施方式，对本发明的技术进行详细描述。应当知道的是，以下具体实施方式仅用于帮助本领域技术人员理解本发明，而非对本发明的限定。\n\n[0032]如图2是本发明所述MicroLED转移方法的流程示意图；图3A至图3E是与图2所示MicroLED转移方法的步骤流程对应的结构示意图。\n\n[0033]如图2所示，在本实施例中提供一种MicroLED转移方法包括：步骤S1：制作MicroLEDs晶圆的步骤：步骤S2：将所述MicroLEDs晶圆1粘合到临时基板上的步骤：步骤S3：剥离MicroLEDs晶圆基板的步骤；以及，步骤S4：获得MicroLED芯片的步骤。\n\n[0034]在所述步骤S1中，如图3A所示，首先在一基板S上制作MicroLEDs晶圆1，并在所述MicroLEDs晶圆1上设置用于形成MicroLED芯片的电极2。随后，在所述电极2上胶合ACF胶3。\n\n[0035]在本实施例中，所述MicroLEDs晶圆1是2吋或4吋，但本发明并不以晶圆1的大小为限制。所述MicroLEDs晶元1的基板S，可以是，例如：蓝宝石基板(Sapphire Substrate)、氮化镓基板(Gallium Nitride Substrate)、氮化铝基板(Aluminum Nitride Substrate)、硅基板(Silicon Substrate)、砷化镓基板(Gallium Arsenide Substrate)或碳化硅基板(Silicon Carbide Substrate)等。在本实施例中采用蓝宝石基板。\n\n[0036]所述MicroLEDs晶圆1的制作过程包括：首先通过金属有机物化学气相沉积设备在蓝宝石(Al2O3)衬底上制备出MicroLED的各类晶层，如：GaN buffer层/n型GaN,、多量子阱层(MQW)发光层/P型GaN；再在晶圆上形成ITO电流扩展层以及金属电极层，通过ICP(感应耦合等离子体蚀刻)工艺制作电极。最终，如图3A所示，获得具有电极2的MicroLEDs晶圆1，并在具有电极的MicroLEDs晶圆1制作完成后，在电极2侧胶合ACF胶3。\n\n[0037]在所述步骤S2中，如图2和图3B所示，将所述MicroLEDs晶圆1通过ACF胶3侧粘合到临时基板7上。\n\n[0038]在所述步骤S3中。如图2和图3C所示，利用激光剥离技术(Laser Lift-Off)，通过在所述基板S侧照射266nm激光，使处于基板S与GaN界面处的GaN气化，从而剥离所述基板S。此时，如图3C所示，通过所述ACF胶3粘合在临时基板7上的仅为具有电极2的MicroLEDs晶圆1，而没有所述基板S。\n\n[0039]接着，在所述步骤S3中，如图2和图3D所示，通过切割，将所述MicroLEDs晶圆1切割为多个MicroLED单芯片6。此时，所有MicroLED单芯片6通过所述ACF胶3粘合在临时基板7。并且，如图3D所示，所述ACF胶3也被一并切割。\n\n[0040]在所述步骤S4中，在转移前，通过紫外光(ultraviolet)照射，实现MicroLED单芯片与临时基板解胶，即可通过转移设备的转移头把所述MicroLED单芯片6从临时基板7上取下并取放到一TFT基板4上。从而，如图3E所示，利用ACF胶3将MicroLED单芯片6的电极2与一TFT基板4的电极5实现对位，再通过对压头的加热和压力，实现MicroLED单芯片6的电极2与所述TFT基板4上的电极5电气连接。\n\n[0041]本领域技术人员可以理解的是，本文中术语MicroLED指示尺寸小于100um的LED，又称uLED；术语ACF是指异方性导电胶膜，是Anisotropic Conductive Film的缩写。\n\n[0042]基于上述，在本发明的所述MicroLED转移方法中，透过在粘合MicroLEDs晶圆与临时基板前，在MicroLED芯片电极侧胶合ACF胶，因此本发明实施例中的MicroLED转移方法，大量节省ACF胶的使用量，提升ACF材料的利用率，避免材料浪费，且由于在ACF仅位于MicroLED下表面，可以有避免由于TFT地形不平坦问题导致污染压头的现象。\n\n[0043]发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。');
INSERT INTO `os_patent_instruction_text` VALUES (10680, 23734, '技术领域\n\n[0001]本发明涉及平面显示技术领域，尤其是，其中的一种显示基板、其制备方法及其显示装置。\n\n背景技术\n\n[0002]已知，随着平面显示技术的不断发展，业界开发出了各种类型的平面显示器，这其中由其是以LED为基础的显示器，更是得到了长足的发展。这其中除了一般常说的OLED显示器外，还发展出了Micro-LED(Micro Light Emitting Diode Display)显示器。\n\n[0003]其中所述Micro LED Display的显示原理，是将LED结构设计进行薄膜化、微小化、阵列化，其尺寸仅在1～10μm等级左右；然后将这些LED批量式的转移至电路基板上(含下电极与晶体管)，在利用物理沉积制程完成其上保护层与上电极的沉积，最后进行上基板的封装，如此，也就完成了一结构简单的Micro LED显示器。\n\n[0004]但是，如上所述，为了制作微发光二极管显示器，需要把微小的LED从原始衬底转移到接收基板上并排列成阵列。而这一操作涉及巨量且微小的Micro LED器件的精确转移，以及后续的精确绑定等问题。\n\n[0005]目前，业界已知的Micro LED与TFT间的电极连接绑定方案中，采用的方法一般为Micro LED先转移到接收基板上，再通过所述接收基板转移到预定位置处，然后在与显示基板上预图案化的绑定材料进行电极粘合绑定。其中的具体操作较多采用AuSn、InSn等类似的低熔点金属进行粘合，由于这其中的操作涉及绑定材料间的固相-液相-固相转化，较为复杂，同时也容易造成绑定不良，进而很大机率导致后续修复成本增加。\n\n[0006]因此，确有必要来开发一种新型的显示基板，来克服现有技术中的缺陷。\n\n发明内容\n\n[0007]本发明的一个方面是提供一种显示基板，其采用新型的磁性定位功能层结构设计，使得其能够与其上设置的其它具有磁性定位功能层结构进行自对准操作，从而提升了两者间的对准精度，降低了后续因对准精度不够而可能导致的修复成本；同时，其采用的自对准方式也简化了相应的对准操作。\n\n[0008]本发明采用的技术方案如下：\n\n[0009]一种显示基板，其包括基板层。其中所述基板层上设置有功能层，所述功能层上设置有第一定位层，其中所述第一定位层采用的构成材料包括磁性材料。\n\n[0010]进一步的，在不同实施方式中，其中所述第一定位层采用的磁性材料包括但不限于铁磁材料、钴磁材料或是镍磁材料等等；例如，包括但不限于NiFe、CoFe以及FeCrCo等磁性材料。\n\n[0011]进一步的，在不同实施方式中，其中所述第一定位层可以是单层结构，也可以是多层由不同磁性材料构成的叠层结构。例如，可以是2层叠层结构，也可以是3层或以上数量的叠层结构，具体可随需要而定，并无限定。\n\n[0012]进一步的，在不同实施方式中，其中所述功能层包括TFT器件层，所述TFT器件层上设置有钝化层(PV层)，所述第一定位层设置在所述钝化层上。而在其他实施方式中，所述第一定位层也可以是设置在平坦层(OC层)或是绝缘层上等等，具体可随需要而定，并无限定。\n\n[0013]进一步的，在不同实施方式中，其中所述第一定位层上设置有Micro-Led，其中所述Micro-Led设置有对应的第二定位层，所述第二定位层也采用磁性材料构成，所述第一定位层和第二定位层之间通过磁性定位连接。\n\n[0014]进一步的，在不同实施方式中，其中所述第一定位层两侧的功能层上设置有堤坝层(Bank)。\n\n[0015]进一步的，在不同实施方式中，其中所述功能层上还设置有像素定义层和顶部电极层，其中所述Micro-Led的电极层与所述顶部电极层电性连接。\n\n[0016]进一步的，在不同实施方式中，其中所述像素定义层采用的材料为有底切结构(under cut)的材料。\n\n[0017]进一步的，本发明的又一方面为提供一种本发明涉及的所述显示基板的制备方法，其包括以下步骤：\n\n[0018]步骤S1、提供一基板层，在所述基板层上形成功能层；\n\n[0019]步骤S2、在所述功能层上以沉积的方式沉积磁性材料进而形成所述第一定位层。\n\n[0020]进一步的，在不同实施方式中，在步骤S2中，当所述第一定位层完成后，还会对其进行磁化处理。\n\n[0021]进一步的，在不同实施方式中，其还包括步骤S3，其为在所述第一定位层两侧的功能层上制备堤坝层(Bank)。\n\n[0022]进一步的，在不同实施方式中，其还包括步骤S4，其为在所述两堤坝层之间放置缓冲液，然后将预设的Micro-Led放置入两堤坝层之间的缓冲溶液中，其中所述Micro-Led也包括由磁性材料构成的第二定位层，随着所述缓冲溶液的逐步挥发，通过所述第一定位层与所述第二定位层之间的磁性连接实现所述Micro-Led在所述第一定位层上的自对准定位。\n\n[0023]进一步的，在不同实施方式中，其还包括步骤S5，其为在所述功能层以及所述Micro-Led上制备相应的像素定义层和顶部电极层。\n\n[0024]进一步的，在不同实施方式中，在步骤S5中，其中在基板上制作像素电极定义层时，其采用的材料为有底切结构(under cut)的材料。其中所述像素定义层的形成使得后续顶部电极沉积时，透明导电层(TCO)会自对准的形成多个相互绝缘区域(形成绝缘隔离线)。\n\n[0025]进一步的，在不同实施方式中，在步骤S5中，其中所述顶部电极层是利用OpenMask沉积形成，其中所述顶部电极层可以为ITO、IZO、AZO等透明导电材料(TCO)或金属材料，并且通过所述Micro LED及TFT基板上的底切结构，形成电极导线及导线间相互绝缘。\n\n[0026]进一步的，本发明的又一方面是提供一种显示装置，其包括本发明涉及的显示基板。\n\n[0027]相对于现有技术，本发明的有益效果是：本发明涉及的一种显示基板，其引入新型的磁性定位层，通过磁性定位层之间的相互吸引实现初步的自动定位固定，应用到Micro-Led上，则可以有效的提升转移过程Micro LED与显示基板上的TFT电极间的对准结合精度，进而使得绑定良率提升。\n\n[0028]进一步的，在本发明涉及的所述制备方法中，其在形成所述像素定义层时采用的材料为有底切结构(under cut)的材料，其中所述像素定义层的底切结构使得后续在沉积所述顶部电极层之后通过所述底切结构可以形成相互独立的电极，而不需要采用精确的金属掩膜板(Fine Metal Mask)沉膜技术，其采用的透明导电材料(TCO)会自对准的形成多个相互绝缘区域，进而形成绝缘隔离线。\n\n[0029]而所述顶部电极层是通过Open Mask来沉积形成，从而形成自对准的导电连接层，且可以一次性完成所有Micro LED与所述显示基板上TFT的电极连接，每颗Micro LED与所述显示基板上的TFT电极连接不会出现差异性，进而有效的提高了器件的制作良率。\n\n附图说明\n\n[0030]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0031]图1为本发明的一个实施方式中提供的一种显示基板制备方法，其步骤S1完成后的结构示意图；\n\n[0032]图2为图1所述的制备方法，其步骤S2完成后的结构示意图；\n\n[0033]图3为图1所述的制备方法，其步骤S3完成后的结构示意图；\n\n[0034]图4为图1所述的制备方法，其步骤S4第一阶段完成后的结构示意图；\n\n[0035]图5为图4所述的制备方法，其步骤S4第二阶段完成后的结构示意图；以及\n\n[0036]图6为图1所述的制备方法，其步骤S5完成后的结构示意图。\n\n具体实施方式\n\n[0037]以下将结合附图和实施例，对本发明涉及的一种显示基板、其制备方法及其显示装置的技术方案作进一步的详细描述。\n\n[0038]其中由于本案同时涉及一种显示基板的结构及其制备方法，为避免不必要的赘述，以下将结合其制备方法对本案涉及的所述显示基板的结构进行说明。\n\n[0039]本发明的一个实施方式提供了一种显示基板的制备方法，其包括以下步骤。\n\n[0040]步骤S1、提供一基板层100，在所述基板层上形成功能层。\n\n[0041]其中所述功能层包括TFT器件功能层，具体为在玻璃基板层或是其他衬底基板层100上沉积缓冲层(Buffer层)101，其中所述缓冲层101可以为单层或是叠层结构，具体采用的材料可以为SiOx、SiNx/SiOx、AlOx/SiOx等等。然后在所述缓冲层101上沉积IGZO或类似的氧化物半导体膜层102，例如，IZO、IGO、IGTO、IGZTO等，并对其进行图案化处理。\n\n[0042]然后沉积栅极绝缘层(GI)103及栅极金属电极(GE)层104并对其进行图案化，其中所述栅极绝缘层103也可以是单层或是叠层结构，具体采用的材料可为SiOx、SiNx、AlOx、SiNx/SiOx等等；其中所述栅极金属电极层104优选为Cu/Mo叠层、Cu/MoTi叠层、Cu/Ti叠层、Al/Mo叠层以及CuNb合金单层等。\n\n[0043]然后沉积中间电介质层(ILD Layer)105并对其图案化及开孔处理，其中所述ILD层105可为SiOx、SiOx/SiNx叠层等。沉积源漏极(S/D)金属电极层106并对其图案化。其中所述金属层的图案化还形成了Vss接入端金属层107，但该金属层107仅为举例性说明所述功能层中可以包括不同的功能金属层，并无任何限定。其中所述S/D层106优选为Cu/Mo叠层、Cu/MoTi叠层、Cu/Ti叠层、Al/Mo叠层以及CuNb合金单层等。\n\n[0044]最后沉积钝化层(PV)108，其中所述钝化层108可以是单层或是叠层结构，具体采用的材料可为SiNx、SiOx、SiOx/SiOx等等。其中完成后的结构图示，请参阅图1所示。\n\n[0045]进一步的，其中所述功能层包括的TFT器件层和其上设置的钝化层，仅为举例性说明，而在其他不同实施方式中，所述功能层可以是由其他器件层构成，具体可随需要而定，并无限定。\n\n[0046]步骤S2、在所述功能层上以沉积的方式沉积磁性材料进而形成所述第一定位层110。\n\n[0047]其中所述第一定位层110可以是单层或是叠层结构，具体采用的材料可为NiFe、CoFe、FeCrCo中的一种或是几种。进一步的，当所述第一定位层110完成后，还会对其进行磁化处理。其中完成后的结构图示，请参阅图2所示。\n\n[0048]步骤S3、其为在所述第一定位层110两侧的功能层上制备堤坝层(Bank)120，其中完成后的结构图示，请参阅图3所示。\n\n[0049]步骤S4、其为在所述两堤坝层120之间放置缓冲液130，然后将预设的Micro-Led200放置入两堤坝层120之间的缓冲溶液中，其中所述Micro-Led也包括由磁性材料构成的第二定位层210，其中涉及的结构图示请参阅图4所示。\n\n[0050]其中所述Micro LED200在LASER或通过其他巨量转移方法进入到所述显示基板的堤坝层120区域处，在所述缓冲溶液130作用下，所述Micro LED 200通过所述第一定位层110的磁场与其自身底部第二定位层210的磁场的自对准作用下对位初步固定于所述显示基板上。\n\n[0051]进一步的，随着所述缓冲溶液130的逐步挥发，通过所述第一定位层110与所述第二定位层210之间的磁性连接，实现所述Micro-Led 200在所述第一定位层110上的自对准定位。其中涉及的结构图示，请参阅图5所示。\n\n[0052]步骤S5、其为在所述功能层以及所述Micro-Led 200上制备相应的像素定义层140和顶部电极层150，以及完成最后的封装层160，其中所述Micro-Led 200的电极层220与所述顶部电极层150电性连接。其完成后的结构图示，请参阅图6所示。其中图6所示结构也即是本发明涉及的一种显示基板的完整结构图示。\n\n[0053]其中所述步骤S5具体为，其中在所述功能层上制作像素电极定义层140时，其采用的材料为有底切结构(under cut)的材料。其中所述像素定义层140的底切结构使得后续在沉积所述顶部电极层150之后通过所述底切结构可以形成相互独立的电极，而不需要采用精确的金属掩膜板(Fine Metal Mask)沉膜技术，其采用的透明导电材料(TCO)会自对准的形成多个相互绝缘区域，进而形成绝缘隔离线。\n\n[0054]进一步的，其中所述顶部电极层150是通过Open Mask沉积形成，其中所述顶部电极层150可以为ITO、IZO、AZO等透明导电材料(TCO)或金属材料，并且通过所述MicroLED200及所述显示基板上的底切结构，形成电极导线及导线间相互绝缘。\n\n[0055]进一步的，本发明的又一方面是提供一种显示装置，其包括本发明涉及的显示基板。\n\n[0056]本发明涉及的一种显示基板，其引入新型的磁性定位层，通过磁性定位层之间的相互吸引实现初步的自动定位固定，应用到Micro-Led上，则可以有效的提升转移过程Micro LED与显示基板上的TFT电极间的结合精度，进而使得绑定良率提升。\n\n[0057]进一步的，在本发明涉及的所述制备方法中，其在形成所述像素定义层时采用的材料为有底切结构(under cut)的材料，其中所述像素定义层的底切结构使得后续在沉积所述顶部电极层之后通过所述底切结构可以形成相互独立的电极，而不需要采用精确的金属掩膜板(Fine Metal Mask)沉膜技术，其采用的透明导电材料(TCO)会自对准的形成多个相互绝缘区域，进而形成绝缘隔离线。\n\n[0058]而所述顶部电极层是通过Open Mask来沉积形成，从而形成自对准的导电连接层，且可以一次性完成所有Micro LED与所述显示基板上TFT的电极连接，每颗Micro LED与所述显示基板上的TFT电极连接不会出现差异性，进而有效的提高了器件的制作良率。\n\n[0059]本发明的技术范围不仅仅局限于上述说明中的内容，本领域技术人员可以在不脱离本发明技术思想的前提下，对上述实施例进行多种变形和修改，而这些变形和修改均应当属于本发明的范围内。', '技术领域\n\n[0001]本发明涉及平面显示技术领域，尤其是，其中的一种显示基板、其制备方法及其显示装置。\n\n背景技术\n\n[0002]已知，随着平面显示技术的不断发展，业界开发出了各种类型的平面显示器，这其中由其是以LED为基础的显示器，更是得到了长足的发展。这其中除了一般常说的OLED显示器外，还发展出了Micro-LED(Micro Light Emitting Diode Display)显示器。\n\n[0003]其中所述Micro LED Display的显示原理，是将LED结构设计进行薄膜化、微小化、阵列化，其尺寸仅在1～10μm等级左右；然后将这些LED批量式的转移至电路基板上(含下电极与晶体管)，在利用物理沉积制程完成其上保护层与上电极的沉积，最后进行上基板的封装，如此，也就完成了一结构简单的Micro LED显示器。\n\n[0004]但是，如上所述，为了制作微发光二极管显示器，需要把微小的LED从原始衬底转移到接收基板上并排列成阵列。而这一操作涉及巨量且微小的Micro LED器件的精确转移，以及后续的精确绑定等问题。\n\n[0005]目前，业界已知的Micro LED与TFT间的电极连接绑定方案中，采用的方法一般为Micro LED先转移到接收基板上，再通过所述接收基板转移到预定位置处，然后在与显示基板上预图案化的绑定材料进行电极粘合绑定。其中的具体操作较多采用AuSn、InSn等类似的低熔点金属进行粘合，由于这其中的操作涉及绑定材料间的固相-液相-固相转化，较为复杂，同时也容易造成绑定不良，进而很大机率导致后续修复成本增加。\n\n[0006]因此，确有必要来开发一种新型的显示基板，来克服现有技术中的缺陷。\n\n发明内容\n\n[0007]本发明的一个方面是提供一种显示基板，其采用新型的磁性定位功能层结构设计，使得其能够与其上设置的其它具有磁性定位功能层结构进行自对准操作，从而提升了两者间的对准精度，降低了后续因对准精度不够而可能导致的修复成本；同时，其采用的自对准方式也简化了相应的对准操作。\n\n[0008]本发明采用的技术方案如下：\n\n[0009]一种显示基板，其包括基板层。其中所述基板层上设置有功能层，所述功能层上设置有第一定位层，其中所述第一定位层采用的构成材料包括磁性材料。\n\n[0010]进一步的，在不同实施方式中，其中所述第一定位层采用的磁性材料包括但不限于铁磁材料、钴磁材料或是镍磁材料等等；例如，包括但不限于NiFe、CoFe以及FeCrCo等磁性材料。\n\n[0011]进一步的，在不同实施方式中，其中所述第一定位层可以是单层结构，也可以是多层由不同磁性材料构成的叠层结构。例如，可以是2层叠层结构，也可以是3层或以上数量的叠层结构，具体可随需要而定，并无限定。\n\n[0012]进一步的，在不同实施方式中，其中所述功能层包括TFT器件层，所述TFT器件层上设置有钝化层(PV层)，所述第一定位层设置在所述钝化层上。而在其他实施方式中，所述第一定位层也可以是设置在平坦层(OC层)或是绝缘层上等等，具体可随需要而定，并无限定。\n\n[0013]进一步的，在不同实施方式中，其中所述第一定位层上设置有Micro-Led，其中所述Micro-Led设置有对应的第二定位层，所述第二定位层也采用磁性材料构成，所述第一定位层和第二定位层之间通过磁性定位连接。\n\n[0014]进一步的，在不同实施方式中，其中所述第一定位层两侧的功能层上设置有堤坝层(Bank)。\n\n[0015]进一步的，在不同实施方式中，其中所述功能层上还设置有像素定义层和顶部电极层，其中所述Micro-Led的电极层与所述顶部电极层电性连接。\n\n[0016]进一步的，在不同实施方式中，其中所述像素定义层采用的材料为有底切结构(under cut)的材料。\n\n[0017]进一步的，本发明的又一方面为提供一种本发明涉及的所述显示基板的制备方法，其包括以下步骤：\n\n[0018]步骤S1、提供一基板层，在所述基板层上形成功能层；\n\n[0019]步骤S2、在所述功能层上以沉积的方式沉积磁性材料进而形成所述第一定位层。\n\n[0020]进一步的，在不同实施方式中，在步骤S2中，当所述第一定位层完成后，还会对其进行磁化处理。\n\n[0021]进一步的，在不同实施方式中，其还包括步骤S3，其为在所述第一定位层两侧的功能层上制备堤坝层(Bank)。\n\n[0022]进一步的，在不同实施方式中，其还包括步骤S4，其为在所述两堤坝层之间放置缓冲液，然后将预设的Micro-Led放置入两堤坝层之间的缓冲溶液中，其中所述Micro-Led也包括由磁性材料构成的第二定位层，随着所述缓冲溶液的逐步挥发，通过所述第一定位层与所述第二定位层之间的磁性连接实现所述Micro-Led在所述第一定位层上的自对准定位。\n\n[0023]进一步的，在不同实施方式中，其还包括步骤S5，其为在所述功能层以及所述Micro-Led上制备相应的像素定义层和顶部电极层。\n\n[0024]进一步的，在不同实施方式中，在步骤S5中，其中在基板上制作像素电极定义层时，其采用的材料为有底切结构(under cut)的材料。其中所述像素定义层的形成使得后续顶部电极沉积时，透明导电层(TCO)会自对准的形成多个相互绝缘区域(形成绝缘隔离线)。\n\n[0025]进一步的，在不同实施方式中，在步骤S5中，其中所述顶部电极层是利用OpenMask沉积形成，其中所述顶部电极层可以为ITO、IZO、AZO等透明导电材料(TCO)或金属材料，并且通过所述Micro LED及TFT基板上的底切结构，形成电极导线及导线间相互绝缘。\n\n[0026]进一步的，本发明的又一方面是提供一种显示装置，其包括本发明涉及的显示基板。\n\n[0027]相对于现有技术，本发明的有益效果是：本发明涉及的一种显示基板，其引入新型的磁性定位层，通过磁性定位层之间的相互吸引实现初步的自动定位固定，应用到Micro-Led上，则可以有效的提升转移过程Micro LED与显示基板上的TFT电极间的对准结合精度，进而使得绑定良率提升。\n\n[0028]进一步的，在本发明涉及的所述制备方法中，其在形成所述像素定义层时采用的材料为有底切结构(under cut)的材料，其中所述像素定义层的底切结构使得后续在沉积所述顶部电极层之后通过所述底切结构可以形成相互独立的电极，而不需要采用精确的金属掩膜板(Fine Metal Mask)沉膜技术，其采用的透明导电材料(TCO)会自对准的形成多个相互绝缘区域，进而形成绝缘隔离线。\n\n[0029]而所述顶部电极层是通过Open Mask来沉积形成，从而形成自对准的导电连接层，且可以一次性完成所有Micro LED与所述显示基板上TFT的电极连接，每颗Micro LED与所述显示基板上的TFT电极连接不会出现差异性，进而有效的提高了器件的制作良率。\n\n附图说明\n\n[0030]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0031]图1为本发明的一个实施方式中提供的一种显示基板制备方法，其步骤S1完成后的结构示意图；\n\n[0032]图2为图1所述的制备方法，其步骤S2完成后的结构示意图；\n\n[0033]图3为图1所述的制备方法，其步骤S3完成后的结构示意图；\n\n[0034]图4为图1所述的制备方法，其步骤S4第一阶段完成后的结构示意图；\n\n[0035]图5为图4所述的制备方法，其步骤S4第二阶段完成后的结构示意图；以及\n\n[0036]图6为图1所述的制备方法，其步骤S5完成后的结构示意图。\n\n具体实施方式\n\n[0037]以下将结合附图和实施例，对本发明涉及的一种显示基板、其制备方法及其显示装置的技术方案作进一步的详细描述。\n\n[0038]其中由于本案同时涉及一种显示基板的结构及其制备方法，为避免不必要的赘述，以下将结合其制备方法对本案涉及的所述显示基板的结构进行说明。\n\n[0039]本发明的一个实施方式提供了一种显示基板的制备方法，其包括以下步骤。\n\n[0040]步骤S1、提供一基板层100，在所述基板层上形成功能层。\n\n[0041]其中所述功能层包括TFT器件功能层，具体为在玻璃基板层或是其他衬底基板层100上沉积缓冲层(Buffer层)101，其中所述缓冲层101可以为单层或是叠层结构，具体采用的材料可以为SiOx、SiNx/SiOx、AlOx/SiOx等等。然后在所述缓冲层101上沉积IGZO或类似的氧化物半导体膜层102，例如，IZO、IGO、IGTO、IGZTO等，并对其进行图案化处理。\n\n[0042]然后沉积栅极绝缘层(GI)103及栅极金属电极(GE)层104并对其进行图案化，其中所述栅极绝缘层103也可以是单层或是叠层结构，具体采用的材料可为SiOx、SiNx、AlOx、SiNx/SiOx等等；其中所述栅极金属电极层104优选为Cu/Mo叠层、Cu/MoTi叠层、Cu/Ti叠层、Al/Mo叠层以及CuNb合金单层等。\n\n[0043]然后沉积中间电介质层(ILD Layer)105并对其图案化及开孔处理，其中所述ILD层105可为SiOx、SiOx/SiNx叠层等。沉积源漏极(S/D)金属电极层106并对其图案化。其中所述金属层的图案化还形成了Vss接入端金属层107，但该金属层107仅为举例性说明所述功能层中可以包括不同的功能金属层，并无任何限定。其中所述S/D层106优选为Cu/Mo叠层、Cu/MoTi叠层、Cu/Ti叠层、Al/Mo叠层以及CuNb合金单层等。\n\n[0044]最后沉积钝化层(PV)108，其中所述钝化层108可以是单层或是叠层结构，具体采用的材料可为SiNx、SiOx、SiOx/SiOx等等。其中完成后的结构图示，请参阅图1所示。\n\n[0045]进一步的，其中所述功能层包括的TFT器件层和其上设置的钝化层，仅为举例性说明，而在其他不同实施方式中，所述功能层可以是由其他器件层构成，具体可随需要而定，并无限定。\n\n[0046]步骤S2、在所述功能层上以沉积的方式沉积磁性材料进而形成所述第一定位层110。\n\n[0047]其中所述第一定位层110可以是单层或是叠层结构，具体采用的材料可为NiFe、CoFe、FeCrCo中的一种或是几种。进一步的，当所述第一定位层110完成后，还会对其进行磁化处理。其中完成后的结构图示，请参阅图2所示。\n\n[0048]步骤S3、其为在所述第一定位层110两侧的功能层上制备堤坝层(Bank)120，其中完成后的结构图示，请参阅图3所示。\n\n[0049]步骤S4、其为在所述两堤坝层120之间放置缓冲液130，然后将预设的Micro-Led200放置入两堤坝层120之间的缓冲溶液中，其中所述Micro-Led也包括由磁性材料构成的第二定位层210，其中涉及的结构图示请参阅图4所示。\n\n[0050]其中所述Micro LED200在LASER或通过其他巨量转移方法进入到所述显示基板的堤坝层120区域处，在所述缓冲溶液130作用下，所述Micro LED 200通过所述第一定位层110的磁场与其自身底部第二定位层210的磁场的自对准作用下对位初步固定于所述显示基板上。\n\n[0051]进一步的，随着所述缓冲溶液130的逐步挥发，通过所述第一定位层110与所述第二定位层210之间的磁性连接，实现所述Micro-Led 200在所述第一定位层110上的自对准定位。其中涉及的结构图示，请参阅图5所示。\n\n[0052]步骤S5、其为在所述功能层以及所述Micro-Led 200上制备相应的像素定义层140和顶部电极层150，以及完成最后的封装层160，其中所述Micro-Led 200的电极层220与所述顶部电极层150电性连接。其完成后的结构图示，请参阅图6所示。其中图6所示结构也即是本发明涉及的一种显示基板的完整结构图示。\n\n[0053]其中所述步骤S5具体为，其中在所述功能层上制作像素电极定义层140时，其采用的材料为有底切结构(under cut)的材料。其中所述像素定义层140的底切结构使得后续在沉积所述顶部电极层150之后通过所述底切结构可以形成相互独立的电极，而不需要采用精确的金属掩膜板(Fine Metal Mask)沉膜技术，其采用的透明导电材料(TCO)会自对准的形成多个相互绝缘区域，进而形成绝缘隔离线。\n\n[0054]进一步的，其中所述顶部电极层150是通过Open Mask沉积形成，其中所述顶部电极层150可以为ITO、IZO、AZO等透明导电材料(TCO)或金属材料，并且通过所述MicroLED200及所述显示基板上的底切结构，形成电极导线及导线间相互绝缘。\n\n[0055]进一步的，本发明的又一方面是提供一种显示装置，其包括本发明涉及的显示基板。\n\n[0056]本发明涉及的一种显示基板，其引入新型的磁性定位层，通过磁性定位层之间的相互吸引实现初步的自动定位固定，应用到Micro-Led上，则可以有效的提升转移过程Micro LED与显示基板上的TFT电极间的结合精度，进而使得绑定良率提升。\n\n[0057]进一步的，在本发明涉及的所述制备方法中，其在形成所述像素定义层时采用的材料为有底切结构(under cut)的材料，其中所述像素定义层的底切结构使得后续在沉积所述顶部电极层之后通过所述底切结构可以形成相互独立的电极，而不需要采用精确的金属掩膜板(Fine Metal Mask)沉膜技术，其采用的透明导电材料(TCO)会自对准的形成多个相互绝缘区域，进而形成绝缘隔离线。\n\n[0058]而所述顶部电极层是通过Open Mask来沉积形成，从而形成自对准的导电连接层，且可以一次性完成所有Micro LED与所述显示基板上TFT的电极连接，每颗Micro LED与所述显示基板上的TFT电极连接不会出现差异性，进而有效的提高了器件的制作良率。\n\n[0059]本发明的技术范围不仅仅局限于上述说明中的内容，本领域技术人员可以在不脱离本发明技术思想的前提下，对上述实施例进行多种变形和修改，而这些变形和修改均应当属于本发明的范围内。');
INSERT INTO `os_patent_instruction_text` VALUES (10681, 23735, '技术领域\n\n[0001]本发明涉及LED技术领域，尤其涉及一种Mini LED背光面板和背光模组。\n\n背景技术\n\n[0002]Mini LED芯片是一种芯片尺寸在100μm×100μm左右的LED芯片，其具有色彩饱和度高、可局部调光、亮度高、节能等优点，可应用于背光显示器。\n\n[0003]如图1所示，大尺寸的mini LED背光面板只能采取多片灯板拼接方式来实现更大尺寸，左侧灯板101和右侧灯板102拼接在一起，产生拼接位置1012，其中左侧灯板101和右侧灯板102分别设置有多个LED光源1011和LED光源1021。由于拼接位置1012翘曲、不平整、断裂、光截断、裁切黑边等问题，导致Mini LED灯板在拼接位置产生暗线。\n\n[0004]综上所述，需要设计出一种新的结构，以解决现有技术中mini LED灯板拼接位置产生暗线，拼接位置发光的色调和正常发光区域亮度不一致，影响背光模组中出光品质的技术问题。\n\n发明内容\n\n[0005]本发明提供一种Mini LED背光面板和背光模组，能够解决现有技术中mini LED灯板拼接位置产生暗线，拼接位置发光的色调和正常发光区域亮度不一致，影响背光模组中出光品质的技术问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明提供一种Mini LED背光面板，包括：对接设置的第一背光子面板和第二背光子面板，所述第一背光子面板与所述第二背光子面板的拼接处设置为补光区，所述补光区内设置有补光材料。\n\n[0008]根据本发明一优选实施例，所述补光材料为荧光粉或者量子点粒子。\n\n[0009]根据本发明一优选实施例，所述第一背光子面板的高度和所述第二背光子面板的发光面高度相同，所述第一背光子面板和所述第二背光子面板之间分离设置以形成所述补光区，所述补光区内设置有补光材料。\n\n[0010]根据本发明一优选实施例，所述第一背光子面板和所述第二背光子面板形状和大小均相同。\n\n[0011]根据本发明一优选实施例，所述第一背光子面板的发光面高度小于所述第二背光子面板的发光面高度，所述第二背光子面板一侧底部设置有切口，所述第一背光子面板一端接入所述切口内，且接入的长度为1至3个光源间距。\n\n[0012]根据本发明一优选实施例，所述补光区位于所述第一背光子面板表面与所述第二背光子面板端部的交接处，且所述补光区中补光层用于连接所述第一背光子面板和所述第二背光子面板中荧光层。\n\n[0013]根据本发明一优选实施例，所述补光层的高度为0.01至1mm，所述第一背光子面板中第一LED光源的发光角度为θ1，所述第二背光子面板中第二LED光源的发光角度为θ2，且θ1等于θ2。\n\n[0014]根据本发明一优选实施例，所述补光层的高度大于1mm，所述第一背光子面板中第一LED光源的发光角度为θ1，所述第二背光子面板中第二LED光源的发光角度为θ2，θ1小于θ2。\n\n[0015]本发明还提供一种背光模组，包括：\n\n[0016]背板，包括补强板和位于所述补强板表面的背胶。\n\n[0017]Mini LED背光面板，位于所述背板表面，所述Mini LED背光面板包括：对接设置的第一背光子面板和第二背光子面板，所述第一背光子面板与所述第二背光子面板的拼接处设置为补光区，所述补光区内补光层设置有补光材料，所述补光材料为荧光粉或者量子点粒子。\n\n[0018]光学膜材，位于所述Mini LED背光面板上方，用于将所述Mini LED背光面板发射的光线聚集在预设范围内出射，提升所述背光模组的亮度。\n\n[0019]根据本发明一优选实施例，所述第一背光子面板的发光面高度小于所述第二背光子面板的发光面高度，所述第二背光子面板一侧底部设置有切口，所述第一背光子面板一端接入所述切口内，且接入的长度为1至3个光源间距。\n\n[0020]所述补光层的高度为0.1至1mm，所述第一背光子面板中第一LED光源的发光角度为θ1，所述第二背光子面板中第二LED光源的发光角度为θ2，且θ1等于θ2。\n\n[0021]所述补光层的高度大于1mm，所述第一背光子面板中第一LED光源的发光角度为θ1，所述第二背光子面板中第二LED光源的发光角度为θ2，θ1小于θ2。\n\n[0022]本发明的有益效果为：Mini LED背光面板中任意相邻两个背光子面板补光区填充补光材料，该补光材料为荧光粉或者量子点，该补光材料使拼接位置颜色和其他区域保持一致，确保Mini LED背光面板外观平整，背光模组亮态时，Mini LED背光面板发光激发拼接位置补光材料发光，以使拼接位置发光的色调和正常区域一致，提高了拼接位置上亮度，避免拼接位置上产生色差，从而提升Mini LED背光面板发出光的品质，其次在Mini LED背光面板中不同高度的发光面上采用大小发光角度混排的设计方案，有利于背光模组的超薄设计。\n\n附图说明\n\n[0023]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0024]图1为现有技术中一种Mini LED背光面板结构示意图；\n\n[0025]图2为本申请实施例提供一种Mini LED背光面板结构示意图；\n\n[0026]图3为本申请实施例提供另一种Mini LED背光面板结构示意图；\n\n[0027]图4为本申请实施例提供另一种Mini LED背光面板一种发光角度示意图；\n\n[0028]图5为本申请实施例提供另一种Mini LED背光面板另一种发光角度示意图；\n\n[0029]图6为本申请实施例提供一种背光模组结构示意图；\n\n[0030]图7为本申请实施例提供另一种背光模组结构示意图。\n\n具体实施方式\n\n[0031]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0032]本发明针对现有技术中mini LED灯板拼接位置产生暗线，拼接位置发光的色调和正常发光区域亮度不一致，影响背光模组中出光品质的技术问题，本实施例能够解决该缺陷。\n\n[0033]本申请实施例提供一种Mini LED背光面板，包括：对接设置的第一背光子面板和第二背光子面板，第一背光子面板与第二背光子面板的拼接处设置为补光区，补光区内设置有补光材料。\n\n[0034]本实施并不限于两个背光子面板拼接，还可以设置多个背光子面板相互拼接，任意相邻两个背光子面板的拼接位置，拼接位置设置有补光区，补光区可以位于相邻两个背光子面板之间，还可以位于在相邻两个背光子面板交接处，补光区是为了实现相邻两个背光子面板衔接处发出的光线亮度与背光子面板发出的亮线相同，外观平整美观。该补光区内设置有补光材料，补光材料包括荧光粉或者量子点等色转换材料，例如，背光子面板发射出蓝光，经过色转换材料后，将蓝光转换为红光、绿光或者蓝光，进而实现红绿蓝三色光。\n\n[0035]任意背光子面板中LED光源设置在背光子面板的白油层内，并凸出白油层的表面，延伸至背光子面板的荧光层中；其中，背光子面板中靠近补光区的LED光源散发光线后，经过补光区中补光层转换成相应的光线，传播出去，有部分未被补光层吸收，反射回来的光，这部分光经过白油层的上表面时，在白油层上表面处反射，再次经过补光层的转换，转换成相应的光线，传播出去，提升了补光层取光效率，从而提升了Mini LED背光面板的整体出光效率。\n\n[0036]如图2所示，本申请实施例提供一种Mini LED背光面板200，包括：对接设置的第一背光子面板201和第二背光子面板202，第一背光子面板201的发光面高度和第二背光子面板202的发光面高度相同，第一背光子面板201和第二背光子面板202之间分离设置以形成补光区203，即端面2015和端面2025之间的区域。补光区203内设置有补光材料，该补光材料为荧光粉或者量子点粒子，补光区203处的补光层厚度与背光子面板荧光层厚度相当或者略厚，确保Mini LED背光面板200外观平整；当背光模组处于亮态时，背光子面板发光也可以激发补光区203处荧光粉或量子点粒子发光，以使补光区203色调和正常区域一致，提高了补光区203亮度，避免补光区203上产生色差，改善补光区203亮度不均的问题，从而提升Mini LED背光面板200发出光的品质。\n\n[0037]第一背光子面板201和第二背光子面板202的形状和大小均相同。第一背光子面板201包括第一载体2011、第一白油层2012，第一LED光源2013和第一荧光层2014；第二背光子面板202包括第二载体2021、第二白油层2022，第二LED光源2023和第二荧光层2024，第一背光子面板201的结构及其作用和第二背光子面板202相应的结构和作用相同。\n\n[0038]其中，第一载体2011包括线路层，用于给第一LED光源2013提供电能，第一白油层2012设置在第一载体2011的表面，第一LED光源2013阵列分布于第一白油层2012中，且第一LED光源2013凸出第一白油层2012的表面，并延伸至第一荧光层2014中，每个第一LED光源2013上表面设置有第一凹型结构，第一凹型结构的底部放置LED芯片，第一LED光源2013散发光线后，经过第一荧光层2014转换成相应的光线，传播出去，有部分未被第一荧光层2014吸收，反射回来的光，在第一白油层2012上表面反射，再次经过第一荧光层2014，转换成相应的光线，传播出去，提升了第一荧光层2014取光效率，从而提升了Mini LED背光面板200的整体出光效率。\n\n[0039]本实施例中第一背光子面板201和第二背光子面板202的形状相同，单独制作，模块化生产，提高背光子面板生产的效率。本实施并不限于两个背光子面板拼接，还可以设置多个背光子面板相互拼接，任意相邻两个背光子面板的补光区中填充补光材料，以提高提升Mini LED背光面板200发出光的品质。\n\n[0040]如图3所示，本申请实施例提供另一种Mini LED背光面板300，第一背光子面板301的发光面高度小于第二背光子面板302的发光面高度，第二背光子面板302一侧底部设置有切口304，呈台阶状，第一背光子面板301的截面形状为长方形，该长方形的高与切口304的高度相同，第一背光子面板301一端接入切口304内，且接入的长度为1至3个光源间距D，其中，光源间距D为一个LED光源的宽度和相邻两个LED光源之间的间隙距离之和，第二背光子面板302位于切口304上方部分设置有第二LED光源3023，接入切口304内第一背光子面板301部分未设置第一LED光源3013；补光区303位于第一背光子面板301的表面30141，并贴合第二背光子面板302与第一背光子面板301相邻的侧面30241，即补光区303位于第一背光子面板301表面30141与第二背光子面板302侧面30241的交接处，补光区303中补光层用于连接第一背光子面板301和第二背光子面板302。补光区303内设置有补光材料，该补光材料为荧光粉或者量子点粒子，补光区303处的补光层厚度与背光子面板荧光层厚度相当或者略厚，确保Mini LED背光面板300外观平整；当背光模组处于亮态时，背光子面板发光也可以激发补光区303处荧光粉或量子点粒子发光，以使补光区303色调和正常区域一致，提高了补光区303亮度，避免补光区303上产生色差，改善补光区303亮度不均的问题，从而提升Mini LED背光面板300发出光的品质。\n\n[0041]本实施例中第一背光子面板301的截面呈长方形，包括第一载体3011、第一白油层3012，第一LED光源3013和第一荧光层3014；其中，第一载体3011包括线路层，用于给第一LED光源3013提供电能，第一白油层3012设置在第一载体3011的表面，第一LED光源3013设置在第一白油层3012中，且凸出第一白油层3012的表面，并延伸至第一荧光层3014中，每个第一LED光源3013上表面设置有第一凹型结构，第一凹型结构的底部放置LED芯片，第一LED光源3013散发光线后，经过第一荧光层3014转换成相应的光线，传播出去，有部分未被第一荧光层3014吸收，反射回来的光，在第一白油层3012上表面反射，再次经过第一荧光层3014，转换成相应的光线，传播出去，提升了第一荧光层3014取光效率，从而提升了MiniLED背光面板300的整体出光效率。\n\n[0042]第二背光子面板302的截面呈台阶状，包括第二载体3021、第二白油层3022，第二LED光源3023和第二荧光层3024；其中，第二载体3021包括线路层，用于给第二LED光源3023提供电能，第二白油层3022设置在第二载体3021的表面，第二白油层3022中间隔设置有多个第二LED光源3023，且第二LED光源3023凸出第二白油层3022，并延伸至第二荧光层3024中，每个第二LED光源3023上表面设置有第二凹型结构，第二凹型结构的底部放置LED芯片，第二LED光源3023散发光线后，经过第二荧光层3024转换成相应的光线，传播出去，有部分被第二荧光层3024反射回来的光，在第二白油层3022上表面反射，再次经过第二荧光层3024，转换成相应的光线，传播出去，提升了第四三荧光层3024取光效率，从而提升了MiniLED背光面板300的整体出光效率。\n\n[0043]本实施例中第一背光子面板301和第二背光子面板302的形状不同，单独制作，模块化生产，提高背光子面板生产的效率。本实施并不限于两个背光子面板拼接，还可以设置多个背光子面板相互拼接，任意相邻两个背光子面板的补光区中填充补光材料，以提高提升Mini LED背光面板300发出光的品质。\n\n[0044]如图4所示，本申请实施例提供另一种Mini LED背光面板300一种发光角度示意图；第一背光子面板301的发光面低于第二背光子面板302的发光面，当第一背光子面板301发光面与第二背光子面板302发光面高度差较小，补光区303中补光层的高度为0.01至1mm，边30142的长度为0.01至1mm时，第一背光子面板301中第一LED光源3013的发光角度为θ1，第二背光子面板302中第二LED光源3023的发光角度为θ2，θ1等于θ2。由于补光区303中补光层的高度较小，当第一LED光源3013和第二LED光源3023发射的光到达同一预设水平位置306时，第一LED光源3013发射光的路线长度S 1等于第二LED光源3023发射光的路线长度S2，确保了Mini LED背光面板300发射光源亮度一致。\n\n[0045]如图5所示，本申请实施例提供另一种Mini LED背光面板300另一种发光角度示意图，第一背光子面板301的发光面低于第二背光子面板302的发光面，当第一背光子面板301发光面与第二背光子面板302发光面高度差较大，补光区303中补光层的高度大于1mm，边30142的长度大于1mm时，第一背光子面板301中第一LED光源3013的发光角度为θ1，第二背光子面板302中第二LED光源3023的发光角度也为θ2，例如，θ1为110°，θ2为140°，当第一LED光源3013和第二LED光源3023到达同一预设水平位置306时，第一LED光源3013发射光的路线长度S 11等于第二LED光源3023发射光的路线长度S21，靠近补光区303的第一LED光源3013发射光线到达补光区303中补光层的边30142，会发生反射，如光线S3，确保了Mini LED背光面板300发射光源亮度一致。\n\n[0046]在高低位置上采用小角度和大角度混排的方案，改善背光子面板拼接处亮度不均匀的现象，提升了Mini LED背光面板300的整体出光效率和出光品质，同时有利于背光模组的超薄设计。本实施并不限于两个背光子面板接入，还可以设置多个背光子面板相互接入，任意相邻两个背光子面板的补光区填充有补光材料，以提高提升Mini LED背光面板发出光的品质。\n\n[0047]依据本发明的上述目的，提供一种背光模组400，如图6所示，包括：\n\n[0048]背板401，包括补强板4011和位于补强板4011表面的背胶4012，补强板4011优选为铝合金，厚度范围为10至40um，并对其表面进行开槽冲切，有利于Mini LED背光面板200散热；背胶4012，用于固定Mini LED背光面板200中背光子面板。\n\n[0049]上述Mini LED背光面板200，位于背板401表面，由于图6的空间有限，Mini LED背光面板200的结构和区域未用符号标出，相应的结构和区域标号跟图2的一样，Mini LED背光面板200包括：对接设置的第一背光子面板201和第二背光子面板202，第一背光子面板201与第二背光子面板202的拼接处设置为补光区203，补光区203内补光层设置有补光材料，补光材料为荧光粉或者量子点粒子，第一背光子面板201的发光面高度和第二背光子面板202的发光面高度相同，第一背光子面板201和第二背光子面板202之间分离设置以形成补光区203，补光区203内设置有补光材料。其中，第一背光子面板201和第二背光子面板202形状和大小均相同，第一背光子面板201和第二背光子面板202均包括载体、白油层、LED光源和荧光层，LED光源设置在白油层内，并凸出白油层的表面，延伸至荧光层中。\n\n[0050]光学膜材402，位于Mini LED背光面板200上方，用于将Mini LED背光面板200发射的光线聚集在预设范围内出射，提升背光模组400的亮度。\n\n[0051]依据本发明的上述目的，提供另一种背光模组500，如图7所示，包括：\n\n[0052]背板501，包括补强板5011和位于补强板5011表面的背胶5012，补强板5011优选为铝合金，厚度范围为10至40um，并对其表面进行开槽冲切，有利于Mini LED背光面板300散热；背胶5012，用于固定Mini LED背光面板300中背光子面板。\n\n[0053]上述Mini LED背光面板300，位于背板501表面，由于图7的空间有限，Mini LED背光面板300的结构和区域未用符号标出，相应的结构和区域标号跟图3的一样，Mini LED背光面板300包括：对接设置的第一背光子面板301和第二背光子面板302，第一背光子面板301与第二背光子面板302的拼接处设置有补光区303，补光区303内补光层设置有补光材料，补光材料为荧光粉或者量子点粒子。第一背光子面板301的发光面高度小于第二背光子面板302的发光面高度，第二背光子面板302一侧底部设置有切口304，第一背光子面板301一端接入切口304内，且接入的长度为1至3个光源间距；补光层的高度为0.1至1mm，第一背光子面板301中第一LED光源3013的发光角度为θ1，第二背光子面板302中第二LED光源3023的发光角度为θ2，且θ1等于θ2；补光层的高度大于1mm，第一背光子面板301中第一LED光源3013的发光角度为θ1，第二背光子面板302中第二LED光源3023的发光角度为θ2，θ1小于θ2，例如θ1＝110°，θ2＝140°，其中，第一背光子面板301和第二背光子面板302均包括载体、白油层、LED光源和荧光层，LED光源设置在白油层内，并凸出白油层的表面，延伸至荧光层中。\n\n[0054]光学膜材502，位于Mini LED背光面板300上方，用于将Mini LED背光面板300发射的光线聚集在预设范围内出射，提升背光模组500的亮度。\n\n[0055]本发明中Mini LED背光面板中任意相邻两个背光子面板补光区填充补光材料，该补光材料为荧光粉或者量子点，该补光材料使拼接位置颜色和其他区域保持一致，确保Mini LED背光面板外观平整，背光模组亮态时，Mini LED背光面板发光激发拼接位置补光材料发光，以使拼接位置发光的色调和正常区域一致，提高了拼接位置上亮度，避免拼接位置上产生色差，从而提升Mini LED背光面板发出光的品质，其次在Mini LED背光面板中不同高度的发光面上采用大小发光角度混排的设计方案，有利于背光模组的超薄设计。\n\n[0056]综上，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及LED技术领域，尤其涉及一种Mini LED背光面板和背光模组。\n\n背景技术\n\n[0002]Mini LED芯片是一种芯片尺寸在100μm×100μm左右的LED芯片，其具有色彩饱和度高、可局部调光、亮度高、节能等优点，可应用于背光显示器。\n\n[0003]如图1所示，大尺寸的mini LED背光面板只能采取多片灯板拼接方式来实现更大尺寸，左侧灯板101和右侧灯板102拼接在一起，产生拼接位置1012，其中左侧灯板101和右侧灯板102分别设置有多个LED光源1011和LED光源1021。由于拼接位置1012翘曲、不平整、断裂、光截断、裁切黑边等问题，导致Mini LED灯板在拼接位置产生暗线。\n\n[0004]综上所述，需要设计出一种新的结构，以解决现有技术中mini LED灯板拼接位置产生暗线，拼接位置发光的色调和正常发光区域亮度不一致，影响背光模组中出光品质的技术问题。\n\n发明内容\n\n[0005]本发明提供一种Mini LED背光面板和背光模组，能够解决现有技术中mini LED灯板拼接位置产生暗线，拼接位置发光的色调和正常发光区域亮度不一致，影响背光模组中出光品质的技术问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明提供一种Mini LED背光面板，包括：对接设置的第一背光子面板和第二背光子面板，所述第一背光子面板与所述第二背光子面板的拼接处设置为补光区，所述补光区内设置有补光材料。\n\n[0008]根据本发明一优选实施例，所述补光材料为荧光粉或者量子点粒子。\n\n[0009]根据本发明一优选实施例，所述第一背光子面板的高度和所述第二背光子面板的发光面高度相同，所述第一背光子面板和所述第二背光子面板之间分离设置以形成所述补光区，所述补光区内设置有补光材料。\n\n[0010]根据本发明一优选实施例，所述第一背光子面板和所述第二背光子面板形状和大小均相同。\n\n[0011]根据本发明一优选实施例，所述第一背光子面板的发光面高度小于所述第二背光子面板的发光面高度，所述第二背光子面板一侧底部设置有切口，所述第一背光子面板一端接入所述切口内，且接入的长度为1至3个光源间距。\n\n[0012]根据本发明一优选实施例，所述补光区位于所述第一背光子面板表面与所述第二背光子面板端部的交接处，且所述补光区中补光层用于连接所述第一背光子面板和所述第二背光子面板中荧光层。\n\n[0013]根据本发明一优选实施例，所述补光层的高度为0.01至1mm，所述第一背光子面板中第一LED光源的发光角度为θ1，所述第二背光子面板中第二LED光源的发光角度为θ2，且θ1等于θ2。\n\n[0014]根据本发明一优选实施例，所述补光层的高度大于1mm，所述第一背光子面板中第一LED光源的发光角度为θ1，所述第二背光子面板中第二LED光源的发光角度为θ2，θ1小于θ2。\n\n[0015]本发明还提供一种背光模组，包括：\n\n[0016]背板，包括补强板和位于所述补强板表面的背胶。\n\n[0017]Mini LED背光面板，位于所述背板表面，所述Mini LED背光面板包括：对接设置的第一背光子面板和第二背光子面板，所述第一背光子面板与所述第二背光子面板的拼接处设置为补光区，所述补光区内补光层设置有补光材料，所述补光材料为荧光粉或者量子点粒子。\n\n[0018]光学膜材，位于所述Mini LED背光面板上方，用于将所述Mini LED背光面板发射的光线聚集在预设范围内出射，提升所述背光模组的亮度。\n\n[0019]根据本发明一优选实施例，所述第一背光子面板的发光面高度小于所述第二背光子面板的发光面高度，所述第二背光子面板一侧底部设置有切口，所述第一背光子面板一端接入所述切口内，且接入的长度为1至3个光源间距。\n\n[0020]所述补光层的高度为0.1至1mm，所述第一背光子面板中第一LED光源的发光角度为θ1，所述第二背光子面板中第二LED光源的发光角度为θ2，且θ1等于θ2。\n\n[0021]所述补光层的高度大于1mm，所述第一背光子面板中第一LED光源的发光角度为θ1，所述第二背光子面板中第二LED光源的发光角度为θ2，θ1小于θ2。\n\n[0022]本发明的有益效果为：Mini LED背光面板中任意相邻两个背光子面板补光区填充补光材料，该补光材料为荧光粉或者量子点，该补光材料使拼接位置颜色和其他区域保持一致，确保Mini LED背光面板外观平整，背光模组亮态时，Mini LED背光面板发光激发拼接位置补光材料发光，以使拼接位置发光的色调和正常区域一致，提高了拼接位置上亮度，避免拼接位置上产生色差，从而提升Mini LED背光面板发出光的品质，其次在Mini LED背光面板中不同高度的发光面上采用大小发光角度混排的设计方案，有利于背光模组的超薄设计。\n\n附图说明\n\n[0023]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0024]图1为现有技术中一种Mini LED背光面板结构示意图；\n\n[0025]图2为本申请实施例提供一种Mini LED背光面板结构示意图；\n\n[0026]图3为本申请实施例提供另一种Mini LED背光面板结构示意图；\n\n[0027]图4为本申请实施例提供另一种Mini LED背光面板一种发光角度示意图；\n\n[0028]图5为本申请实施例提供另一种Mini LED背光面板另一种发光角度示意图；\n\n[0029]图6为本申请实施例提供一种背光模组结构示意图；\n\n[0030]图7为本申请实施例提供另一种背光模组结构示意图。\n\n具体实施方式\n\n[0031]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0032]本发明针对现有技术中mini LED灯板拼接位置产生暗线，拼接位置发光的色调和正常发光区域亮度不一致，影响背光模组中出光品质的技术问题，本实施例能够解决该缺陷。\n\n[0033]本申请实施例提供一种Mini LED背光面板，包括：对接设置的第一背光子面板和第二背光子面板，第一背光子面板与第二背光子面板的拼接处设置为补光区，补光区内设置有补光材料。\n\n[0034]本实施并不限于两个背光子面板拼接，还可以设置多个背光子面板相互拼接，任意相邻两个背光子面板的拼接位置，拼接位置设置有补光区，补光区可以位于相邻两个背光子面板之间，还可以位于在相邻两个背光子面板交接处，补光区是为了实现相邻两个背光子面板衔接处发出的光线亮度与背光子面板发出的亮线相同，外观平整美观。该补光区内设置有补光材料，补光材料包括荧光粉或者量子点等色转换材料，例如，背光子面板发射出蓝光，经过色转换材料后，将蓝光转换为红光、绿光或者蓝光，进而实现红绿蓝三色光。\n\n[0035]任意背光子面板中LED光源设置在背光子面板的白油层内，并凸出白油层的表面，延伸至背光子面板的荧光层中；其中，背光子面板中靠近补光区的LED光源散发光线后，经过补光区中补光层转换成相应的光线，传播出去，有部分未被补光层吸收，反射回来的光，这部分光经过白油层的上表面时，在白油层上表面处反射，再次经过补光层的转换，转换成相应的光线，传播出去，提升了补光层取光效率，从而提升了Mini LED背光面板的整体出光效率。\n\n[0036]如图2所示，本申请实施例提供一种Mini LED背光面板200，包括：对接设置的第一背光子面板201和第二背光子面板202，第一背光子面板201的发光面高度和第二背光子面板202的发光面高度相同，第一背光子面板201和第二背光子面板202之间分离设置以形成补光区203，即端面2015和端面2025之间的区域。补光区203内设置有补光材料，该补光材料为荧光粉或者量子点粒子，补光区203处的补光层厚度与背光子面板荧光层厚度相当或者略厚，确保Mini LED背光面板200外观平整；当背光模组处于亮态时，背光子面板发光也可以激发补光区203处荧光粉或量子点粒子发光，以使补光区203色调和正常区域一致，提高了补光区203亮度，避免补光区203上产生色差，改善补光区203亮度不均的问题，从而提升Mini LED背光面板200发出光的品质。\n\n[0037]第一背光子面板201和第二背光子面板202的形状和大小均相同。第一背光子面板201包括第一载体2011、第一白油层2012，第一LED光源2013和第一荧光层2014；第二背光子面板202包括第二载体2021、第二白油层2022，第二LED光源2023和第二荧光层2024，第一背光子面板201的结构及其作用和第二背光子面板202相应的结构和作用相同。\n\n[0038]其中，第一载体2011包括线路层，用于给第一LED光源2013提供电能，第一白油层2012设置在第一载体2011的表面，第一LED光源2013阵列分布于第一白油层2012中，且第一LED光源2013凸出第一白油层2012的表面，并延伸至第一荧光层2014中，每个第一LED光源2013上表面设置有第一凹型结构，第一凹型结构的底部放置LED芯片，第一LED光源2013散发光线后，经过第一荧光层2014转换成相应的光线，传播出去，有部分未被第一荧光层2014吸收，反射回来的光，在第一白油层2012上表面反射，再次经过第一荧光层2014，转换成相应的光线，传播出去，提升了第一荧光层2014取光效率，从而提升了Mini LED背光面板200的整体出光效率。\n\n[0039]本实施例中第一背光子面板201和第二背光子面板202的形状相同，单独制作，模块化生产，提高背光子面板生产的效率。本实施并不限于两个背光子面板拼接，还可以设置多个背光子面板相互拼接，任意相邻两个背光子面板的补光区中填充补光材料，以提高提升Mini LED背光面板200发出光的品质。\n\n[0040]如图3所示，本申请实施例提供另一种Mini LED背光面板300，第一背光子面板301的发光面高度小于第二背光子面板302的发光面高度，第二背光子面板302一侧底部设置有切口304，呈台阶状，第一背光子面板301的截面形状为长方形，该长方形的高与切口304的高度相同，第一背光子面板301一端接入切口304内，且接入的长度为1至3个光源间距D，其中，光源间距D为一个LED光源的宽度和相邻两个LED光源之间的间隙距离之和，第二背光子面板302位于切口304上方部分设置有第二LED光源3023，接入切口304内第一背光子面板301部分未设置第一LED光源3013；补光区303位于第一背光子面板301的表面30141，并贴合第二背光子面板302与第一背光子面板301相邻的侧面30241，即补光区303位于第一背光子面板301表面30141与第二背光子面板302侧面30241的交接处，补光区303中补光层用于连接第一背光子面板301和第二背光子面板302。补光区303内设置有补光材料，该补光材料为荧光粉或者量子点粒子，补光区303处的补光层厚度与背光子面板荧光层厚度相当或者略厚，确保Mini LED背光面板300外观平整；当背光模组处于亮态时，背光子面板发光也可以激发补光区303处荧光粉或量子点粒子发光，以使补光区303色调和正常区域一致，提高了补光区303亮度，避免补光区303上产生色差，改善补光区303亮度不均的问题，从而提升Mini LED背光面板300发出光的品质。\n\n[0041]本实施例中第一背光子面板301的截面呈长方形，包括第一载体3011、第一白油层3012，第一LED光源3013和第一荧光层3014；其中，第一载体3011包括线路层，用于给第一LED光源3013提供电能，第一白油层3012设置在第一载体3011的表面，第一LED光源3013设置在第一白油层3012中，且凸出第一白油层3012的表面，并延伸至第一荧光层3014中，每个第一LED光源3013上表面设置有第一凹型结构，第一凹型结构的底部放置LED芯片，第一LED光源3013散发光线后，经过第一荧光层3014转换成相应的光线，传播出去，有部分未被第一荧光层3014吸收，反射回来的光，在第一白油层3012上表面反射，再次经过第一荧光层3014，转换成相应的光线，传播出去，提升了第一荧光层3014取光效率，从而提升了MiniLED背光面板300的整体出光效率。\n\n[0042]第二背光子面板302的截面呈台阶状，包括第二载体3021、第二白油层3022，第二LED光源3023和第二荧光层3024；其中，第二载体3021包括线路层，用于给第二LED光源3023提供电能，第二白油层3022设置在第二载体3021的表面，第二白油层3022中间隔设置有多个第二LED光源3023，且第二LED光源3023凸出第二白油层3022，并延伸至第二荧光层3024中，每个第二LED光源3023上表面设置有第二凹型结构，第二凹型结构的底部放置LED芯片，第二LED光源3023散发光线后，经过第二荧光层3024转换成相应的光线，传播出去，有部分被第二荧光层3024反射回来的光，在第二白油层3022上表面反射，再次经过第二荧光层3024，转换成相应的光线，传播出去，提升了第四三荧光层3024取光效率，从而提升了MiniLED背光面板300的整体出光效率。\n\n[0043]本实施例中第一背光子面板301和第二背光子面板302的形状不同，单独制作，模块化生产，提高背光子面板生产的效率。本实施并不限于两个背光子面板拼接，还可以设置多个背光子面板相互拼接，任意相邻两个背光子面板的补光区中填充补光材料，以提高提升Mini LED背光面板300发出光的品质。\n\n[0044]如图4所示，本申请实施例提供另一种Mini LED背光面板300一种发光角度示意图；第一背光子面板301的发光面低于第二背光子面板302的发光面，当第一背光子面板301发光面与第二背光子面板302发光面高度差较小，补光区303中补光层的高度为0.01至1mm，边30142的长度为0.01至1mm时，第一背光子面板301中第一LED光源3013的发光角度为θ1，第二背光子面板302中第二LED光源3023的发光角度为θ2，θ1等于θ2。由于补光区303中补光层的高度较小，当第一LED光源3013和第二LED光源3023发射的光到达同一预设水平位置306时，第一LED光源3013发射光的路线长度S 1等于第二LED光源3023发射光的路线长度S2，确保了Mini LED背光面板300发射光源亮度一致。\n\n[0045]如图5所示，本申请实施例提供另一种Mini LED背光面板300另一种发光角度示意图，第一背光子面板301的发光面低于第二背光子面板302的发光面，当第一背光子面板301发光面与第二背光子面板302发光面高度差较大，补光区303中补光层的高度大于1mm，边30142的长度大于1mm时，第一背光子面板301中第一LED光源3013的发光角度为θ1，第二背光子面板302中第二LED光源3023的发光角度也为θ2，例如，θ1为110°，θ2为140°，当第一LED光源3013和第二LED光源3023到达同一预设水平位置306时，第一LED光源3013发射光的路线长度S 11等于第二LED光源3023发射光的路线长度S21，靠近补光区303的第一LED光源3013发射光线到达补光区303中补光层的边30142，会发生反射，如光线S3，确保了Mini LED背光面板300发射光源亮度一致。\n\n[0046]在高低位置上采用小角度和大角度混排的方案，改善背光子面板拼接处亮度不均匀的现象，提升了Mini LED背光面板300的整体出光效率和出光品质，同时有利于背光模组的超薄设计。本实施并不限于两个背光子面板接入，还可以设置多个背光子面板相互接入，任意相邻两个背光子面板的补光区填充有补光材料，以提高提升Mini LED背光面板发出光的品质。\n\n[0047]依据本发明的上述目的，提供一种背光模组400，如图6所示，包括：\n\n[0048]背板401，包括补强板4011和位于补强板4011表面的背胶4012，补强板4011优选为铝合金，厚度范围为10至40um，并对其表面进行开槽冲切，有利于Mini LED背光面板200散热；背胶4012，用于固定Mini LED背光面板200中背光子面板。\n\n[0049]上述Mini LED背光面板200，位于背板401表面，由于图6的空间有限，Mini LED背光面板200的结构和区域未用符号标出，相应的结构和区域标号跟图2的一样，Mini LED背光面板200包括：对接设置的第一背光子面板201和第二背光子面板202，第一背光子面板201与第二背光子面板202的拼接处设置为补光区203，补光区203内补光层设置有补光材料，补光材料为荧光粉或者量子点粒子，第一背光子面板201的发光面高度和第二背光子面板202的发光面高度相同，第一背光子面板201和第二背光子面板202之间分离设置以形成补光区203，补光区203内设置有补光材料。其中，第一背光子面板201和第二背光子面板202形状和大小均相同，第一背光子面板201和第二背光子面板202均包括载体、白油层、LED光源和荧光层，LED光源设置在白油层内，并凸出白油层的表面，延伸至荧光层中。\n\n[0050]光学膜材402，位于Mini LED背光面板200上方，用于将Mini LED背光面板200发射的光线聚集在预设范围内出射，提升背光模组400的亮度。\n\n[0051]依据本发明的上述目的，提供另一种背光模组500，如图7所示，包括：\n\n[0052]背板501，包括补强板5011和位于补强板5011表面的背胶5012，补强板5011优选为铝合金，厚度范围为10至40um，并对其表面进行开槽冲切，有利于Mini LED背光面板300散热；背胶5012，用于固定Mini LED背光面板300中背光子面板。\n\n[0053]上述Mini LED背光面板300，位于背板501表面，由于图7的空间有限，Mini LED背光面板300的结构和区域未用符号标出，相应的结构和区域标号跟图3的一样，Mini LED背光面板300包括：对接设置的第一背光子面板301和第二背光子面板302，第一背光子面板301与第二背光子面板302的拼接处设置有补光区303，补光区303内补光层设置有补光材料，补光材料为荧光粉或者量子点粒子。第一背光子面板301的发光面高度小于第二背光子面板302的发光面高度，第二背光子面板302一侧底部设置有切口304，第一背光子面板301一端接入切口304内，且接入的长度为1至3个光源间距；补光层的高度为0.1至1mm，第一背光子面板301中第一LED光源3013的发光角度为θ1，第二背光子面板302中第二LED光源3023的发光角度为θ2，且θ1等于θ2；补光层的高度大于1mm，第一背光子面板301中第一LED光源3013的发光角度为θ1，第二背光子面板302中第二LED光源3023的发光角度为θ2，θ1小于θ2，例如θ1＝110°，θ2＝140°，其中，第一背光子面板301和第二背光子面板302均包括载体、白油层、LED光源和荧光层，LED光源设置在白油层内，并凸出白油层的表面，延伸至荧光层中。\n\n[0054]光学膜材502，位于Mini LED背光面板300上方，用于将Mini LED背光面板300发射的光线聚集在预设范围内出射，提升背光模组500的亮度。\n\n[0055]本发明中Mini LED背光面板中任意相邻两个背光子面板补光区填充补光材料，该补光材料为荧光粉或者量子点，该补光材料使拼接位置颜色和其他区域保持一致，确保Mini LED背光面板外观平整，背光模组亮态时，Mini LED背光面板发光激发拼接位置补光材料发光，以使拼接位置发光的色调和正常区域一致，提高了拼接位置上亮度，避免拼接位置上产生色差，从而提升Mini LED背光面板发出光的品质，其次在Mini LED背光面板中不同高度的发光面上采用大小发光角度混排的设计方案，有利于背光模组的超薄设计。\n\n[0056]综上，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10682, 23736, '技术领域\n\n[0001]本发明涉及显示领域，尤其涉及一种显示面板、显示模组及显示装置。\n\n背景技术\n\n[0002]微型发光二极管(Micro-LED)由于具有自发光，尺寸小，重量轻，亮度高，更有着寿命更长，功耗更低，响应时间更快，及可控性更强的优点，被视为新一代的显示技术。\n\n[0003]然而，目前由于Micro-LED尺寸太小，还无法实现大尺寸显示的需要。\n\n[0004]因此，现有Micro-LED显示存在尺寸太小，无法实现大尺寸显示的问题，需要解决。\n\n发明内容\n\n[0005]本发明提供一种显示面板、显示模组及显示装置，以缓解现有Micro-LED显示存在尺寸太小，无法实现大尺寸显示的问题。\n\n[0006]为解决以上问题，本发明提供的技术方案如下：\n\n[0007]本发明提供一种显示面板，其包括：\n\n[0008]基板；\n\n[0009]柔性驱动电路板，形成于所述基板上，包括显示区、弯曲区和绑定区，在所述显示区内设置有驱动电路；\n\n[0010]Micro-LED，绑定在所述显示区内，与所述驱动电路对应。\n\n[0011]在本发明提供的显示面板中，所述显示面板还包括封装层。\n\n[0012]在本发明提供的显示面板中，所述柔性驱动电路基板还包括柔性衬底和薄膜晶体管层，所述驱动电路由所述薄膜晶体管层中的薄膜晶体管形成。\n\n[0013]在本发明提供的显示面板中，所述柔性衬底的材料为聚酰亚胺或聚对苯二甲酸乙二醇酯。\n\n[0014]在本发明提供的显示面板中，所述柔性衬底的厚度为10～30μm。\n\n[0015]本发明提供一种显示模组，其包括：\n\n[0016]支撑板；\n\n[0017]显示面板，包括柔性驱动电路基板以及绑定在所述柔性驱动电路基板显示区内的Micro-LED；所述柔性驱动电路基板在显示区内，与所述支撑板贴合；所述柔性驱动电路基板的绑定区通过弯曲区弯曲至所述支撑板的另一侧；\n\n[0018]驱动单元，在所述柔性驱动电路基板的绑定区内，与所述显示面板绑定。\n\n[0019]在本发明提供的显示模组中，所述支撑板的尺寸比所述显示面板显示区的尺寸小。\n\n[0020]在本发明提供的显示模组中，所述弯曲区包括第一弯曲区和第二弯曲区，所述第一弯曲区和所述第二弯曲区与所述显示区相接触，且分别位于在所述显示区的两对侧。\n\n[0021]在本发明提供的显示模组中，靠近所述弯曲区的一排Micro-LED的中心点到所述显示模组该侧边缘的距离，小于显示区内两相邻Micro-LED之间距离的一半。\n\n[0022]同时，本发明还提供一种显示装置，其包括：\n\n[0023]背板，形成容纳腔；\n\n[0024]至少两个如上任一所述的显示模组，至少两个所述显示模组在所述容纳腔内拼接。\n\n[0025]本发明的有益效果为：本发明提供一种显示面板、显示模组及显示装置，其显示面板包括基板、和Micro-LED；显示模组通过去除显示面板的柔性驱动电路板上的玻璃基板，在显示面板的显示区内、柔性驱动电路板的一侧贴合支撑板，并将柔性驱动电路板的弯曲区弯曲，绑定区与支撑板的另一侧贴合，实现了显示模组的极窄边框设计；再将若干极窄边框的显示模组设置于显示装置背板形成的容纳腔内，进行固定拼接，达到了Micro-LED的窄缝拼接技术，突破了Micro-LED尺寸太小的问题，实现了Micro-LED大尺寸显示，同时，显示模组能够自由拼接，可以拼接成任意尺寸和分辨率的屏幕。\n\n附图说明\n\n[0026]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0027]图1为本发明实施例提供的显示面板的结构示意图。\n\n[0028]图2为本发明实施例提供的显示模组的第一种结构示意图。\n\n[0029]图3为本发明实施例提供的显示模组的第二种结构示意图。\n\n[0030]图4为本发明实施例提供的显示装置的结构示意图。\n\n[0031]图5为本发明实施例提供的显示装置的俯视示意图。\n\n具体实施方式\n\n[0032]下面将结合本发明的具体实施方案，对本发明实施方案和/或实施例中的技术方案进行清楚、完整的描述，显而易见的，下面所描述的实施方案和/或实施例仅仅是本发明一部分实施方案和/或实施例，而不是全部的实施方案和/或实施例。基于本发明中的实施方案和/或实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施方案和/或实施例，都属于本发明保护范围。\n\n[0033]本发明所提到的方向用语，例如[上]、[下]、[左]、[右]、[前]、[后]、[内]、[外]、[侧]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明和理解本发明，而非用以限制本发明。术语“第一”、“第二”等仅用于描述目的，而不能理解为指示或是暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”等的特征可以明示或者隐含地包括一个或者更多个该特征。\n\n[0034]针对现有Micro-LED显示存在尺寸太小，无法实现大尺寸显示的问题，本发明提供一种显示面板、显示模组及显示装置可以解决这个问题。\n\n[0035]在一种实施例中，如图1所示，本发明提供的显示面板100包括：\n\n[0036]基板110；\n\n[0037]柔性驱动电路板120，形成于基板110上，包括显示区101、弯曲区102和绑定区103，在显示区101内设置有驱动电路；\n\n[0038]Micro-LED130，绑定在显示区101内，与驱动电路对应。\n\n[0039]本发明实施例通过将显示面板的驱动电路板设置为柔性，为后续显示面板实现柔性特征，显示模组的极窄边框设计，以及Micro-LED显示装置的大尺寸化奠定基础。\n\n[0040]在一种实施例中，如图1所示，显示面板100还包括封装层140，封装层140覆盖柔性驱动电路板120和Micro-LED130，用于保护驱动电路板120和Micro-LED130，封装层140包括第一无机封装层、第二无机封装层、以及位于第一无机封装层和第二无机封装层之间的有机封装层，其中第一无机封装层和第二无机封装层的材料包括氮化硅或氮氧化硅等，其主要用于阻隔显示面板外部的水和氧气，以效防止显示面板外的水或氧气进入到显示面板内。有机封装层的材料包括聚甲基丙烯酸甲酯、甲基丙烯酸甲酯等中的一种或多种，其位于第一无机封装层和第二无机封装层之间有助于改善封装层的柔性。\n\n[0041]在一种实施例中，所述柔性驱动电路基板120还包括柔性衬底121和薄膜晶体管层122，驱动电路由薄膜晶体管层122中的薄膜晶体管形成。\n\n[0042]柔性衬底121为柔性的绝缘性材料制备形成的可弯曲的衬底基板，具有可伸展、可弯曲或可弯曲等特性，其材料可以是聚酰亚胺(Polyimide，简称PI)，可以是聚对苯二甲酸乙二醇酯(Polyethylene Terephthalate，简称PET)，也可以是聚碳酸酯(Polycarbonate，简称PC)，还可以是其他柔性材料，在此不做限制。柔性衬底121的厚度一般为10～30μm。\n\n[0043]薄膜晶体管层122包括有源层、栅极层、源极漏极层、设置在有源层和栅极层之间的栅极绝缘层、设置在栅极与源漏极层之间的层间绝缘层。在本实施例中，薄膜晶体管层122可以是顶栅结构的薄膜晶体管，也可以是底栅结构的薄膜晶体管；可以是单栅极结构薄膜晶体管，也可以是双栅极结构薄膜晶体管，在此不做限定。\n\n[0044]在一种实施例中，Micro-LED130包括绿光Micro-LED、红光Micro-LED和蓝光Micro-LED。绿光Micro-LED用于发出绿光、红光Micro-LED用于发出红光、蓝光Micro-LED用于发出蓝光。Micro-LED包括基板层、以及在基板层上依次层叠设置的本征层、N型氮化镓层、多量子阱层、P型氮化镓层、绝缘层、电流扩散层、保护层、以及N型和p型电极层。基板层一般为蓝宝石基板，多量子阱层设置于N型氮化镓层和P型氮化镓层之间，多量子阱层一般为多层交叠的氮化铟镓层和氮化镓层组成，决定了Micro-LED130的发光颜色，绝缘层和保护层一般为氧化硅或氮化硅等绝缘材料层，电流扩散层的材料一般为透明的氧化铟锡，也可以是石墨烯或其他金属，N型和p型电极层为铂、金、镍、铬等金属中的一种或其合金。\n\n[0045]在另一种实施例中，Micro-LED130包括载体和设于载体上的蓝光Micro-LED，蓝光Micro-LED正装、倒装或垂直装于载体上。蓝光Micro-LED上依次覆有封装胶层、荧光粉胶层、量子点胶层和阻隔水氧层。封装胶层是由防硫化剂、硅橡胶、硅树脂中的一种或多种材料制成。荧光粉胶层是荧光粉分散于透明胶体中得到的，透明胶体为硅胶、聚甲基丙烯酸甲酯、聚碳酸酯或聚苯乙烯的一种或多种，荧光粉的发光波长为450-600nm。量子点胶层是量子点微球分散于透明胶体中得到的，透明胶体为硅胶、聚甲基丙烯酸甲酯、聚碳酸酯或聚苯乙烯的一种或多种，量子点微球大小可大可小，平均粒径范围为0.1-100μm，发光波长的范围为500-750nm。阻隔水氧层包括阻隔水氧薄膜和覆盖于阻隔水氧薄膜上的阻隔水氧胶层。阻隔水氧薄膜为聚酰亚胺薄膜、PET薄膜、PET为基材的复合膜、聚甲基丙烯酸甲酯薄膜或聚乙烯醇薄膜中的一种或多种，阻隔水氧薄膜覆盖载体的内腔体的上表面。阻隔水氧胶层的材料为硅胶、硅橡胶、硅树脂、聚甲基丙烯酸甲酯、聚乙烯醇或环氧树脂中的一种或多种。\n\n[0046]Micro-LED130可以通过巨量转移制程设置在柔性驱动电路基板120上，绑定在显示区内，与柔性驱动电路基板120内的驱动电路对应。巨量转移制程可以通过真空吸附、静电吸附或磁吸附等手段将Micro-LED吸附而转移到柔性驱动电路基板上。Micro-LED130通过粘结层和键合层与柔性驱动电路基板120连接，其中，粘结层用于将Micro-LED芯片胶黏固定在柔性驱动电路基板上；键合层用于将Micro-LED芯片与柔性驱动电路基板上的驱动电路电连接，以确保可实现利用驱动电路驱动Micro-LED芯片发光。粘结层的材料可为本领域技术人员可知的任一种胶黏材料，如光学胶、温敏胶、压敏胶等，在此不做限制。键合层的材料为金属导电材料，如金属焊接材料或导电胶层，金属材料可采用熔接工艺形成键合层，以电连接柔性驱动电路基板上的驱动电路。导电胶层，如低温各向异性导电膜(Anisotropic Conductive Film，ACF)，可采用直接胶黏的方式电连接柔性驱动电路基板上的驱动电路。\n\n[0047]在一种实施例中，如图2、图3所示，本发明提供一种显示模组10，其包括：\n\n[0048]支撑板200；\n\n[0049]显示面板100，包括柔性驱动电路基板120以及绑定在柔性驱动电路基板显示区101内的Micro-LED130；柔性驱动电路基板120在显示区101内，与支撑板200贴合；柔性驱动电路基板120的绑定区103通过弯曲区102弯曲至支撑板200的另一侧；\n\n[0050]驱动单元300，在柔性驱动电路基板120的绑定区102内，与显示面板100绑定。驱动单元300包括覆晶薄膜和印刷电路板。覆晶薄膜的一端通过各向异性导电胶，绑定于显示面板的绑定区，覆晶薄膜的另一端通过各向异性导电胶绑定印刷电路板。\n\n[0051]本发明实施例提供一种显示模组，包括支撑板、显示面板和驱动单元、以及位于显示面板的显示区内贴合显示面板的支撑板，显示面板内柔性驱动电路基板的绑定区，通过弯曲区弯曲至所述支撑板的另一侧，实现了显示模组的极窄边框设计。\n\n[0052]在一种实施例中，支撑板200为具有一定挺性的膜层结构，去除了玻璃基板后的显示面板，由于柔性衬底太过柔软，极易翘曲，不利于后续制程及显示面板的正常显示。支撑板200的材料可以是玻璃、聚合氯化铝等无机材料，也可以是聚酰亚胺、聚对苯二甲酸乙二醇酯等有机材料。当支撑板为玻璃板时，玻璃板的侧边需要进行磨边操作，以防止在后续显示面板弯曲区弯曲的过程中损伤了显示面板。有机材料的支撑板，其材料可以为树脂材料、框胶或其他胶水等材料，同时支撑板的材料可以与柔性衬底的材料相同。\n\n[0053]在一种实施例中，支撑板200的尺寸与显示面板显示区的尺寸相近。支撑板200的尺寸可以与显示面板显示区的尺寸相同，可以比显示面板显示区的尺寸小，也可以比显示面板显示区的尺寸大，可根据实际需要进行设计。\n\n[0054]在一种实施例中，显示模组内，靠近弯曲区的一排Micro-LED的中心点到显示模组该侧边缘的距离D1，小于显示区内两相邻Micro-LED之间距离D2的一半。\n\n[0055]在一种实施例中，如图2所示，显示面板的弯曲区102与支撑板200的侧边接触。由于显示面板的弯曲区102去除了玻璃基板，且未设置支撑板或其他任何阻碍显示面板柔韧性的结构，因此显示面板的弯曲区102具有极佳的弯曲性能，将显示面板的弯曲区102沿支撑板200的边界进行弯曲，且与支撑板200的侧边贴合弯曲，可以实现弯曲后，靠近弯曲区的一排Micro-LED的中心点到显示模组该侧边缘的距离D1最小。在本实施例中，必须保证支撑板200的侧边光滑平整无毛刺，以避免显示面板的弯曲区102弯曲的过程中，损伤了柔性衬底121。\n\n[0056]在一种实施例中，如图3所示，显示面板的弯曲区102与支撑板200的侧边未接触。由于显示面板的弯曲区102内不仅包括柔性衬底121，还包括薄膜晶体管层122，薄膜晶体管层122内包括各有机和无机膜层结构，因此决定了显示面板弯曲区具有一定的刚性，在弯曲的过程中，显示面板的弯曲区受到一定的弯曲应力，导致显示面板的弯曲区102在弯曲后与支撑板200的侧边存在间隙。在本实施例中，显示面板弯曲区的弧度可以通过设计支撑板200的厚度以及在显示面板弯曲区内增加辅助调节膜层进行调节。\n\n[0057]在一种实施例中，如图2所示，弯曲区102包括第一弯曲区和第二弯曲区，第一弯曲区和第二弯曲区与显示区101相接触，且分别位于在显示区101的两对侧。\n\n[0058]在另一种实施例中，如图3所示，弯曲区102位于所述显示区101的一侧，与显示区101相接触。\n\n[0059]在一种实施例中，显示面板还包括封装层。\n\n[0060]在一种实施例中，柔性驱动电路基板还包括柔性衬底和薄膜晶体管层，驱动电路由薄膜晶体管层中的薄膜晶体管形成。\n\n[0061]在一种实施例中，柔性衬底的材料为聚酰亚胺或聚对苯二甲酸乙二醇酯。\n\n[0062]在一种实施例中，柔性衬底的厚度为10～30μm。\n\n[0063]在一种实施例中，如图4、图5所示，本发明提供一种显示装置，其包括：\n\n[0064]背板20，形成容纳腔；\n\n[0065]显示模组10，至少两个显示模组10在容纳腔内拼接；显示模组包括：显示面板、贴合与显示面板显示区内柔性驱动电路基板侧的支撑板、以及显示面板绑定区内柔性驱动电路基板上的驱动单元，其中柔性驱动电路基板的绑定区通过弯曲区弯曲至所述支撑板的另一侧。\n\n[0066]本发明实施例通过将若干极窄边框的显示模组，设置于显示装置背板形成的容纳腔内，进行固定拼接，达到了Micro-LED的窄缝拼接技术，突破了Micro-LED尺寸太小的问题，实现了Micro-LED大尺寸显示，同时，显示模组能够自由拼接，可以拼接成任意尺寸和分辨率的屏幕。\n\n[0067]在一种实施例中，显示面板还包括封装层。\n\n[0068]在一种实施例中，柔性驱动电路基板还包括柔性衬底和薄膜晶体管层，驱动电路由薄膜晶体管层中的薄膜晶体管形成。\n\n[0069]在一种实施例中，柔性衬底的材料为聚酰亚胺或聚对苯二甲酸乙二醇酯。\n\n[0070]在一种实施例中，柔性衬底的厚度为10～30μm。\n\n[0071]在一种实施例中，支撑板的材料为玻璃、聚酰亚胺、聚对苯二甲酸乙二醇酯或聚合氯化铝中的一种。\n\n[0072]在一种实施例中，支撑板的尺寸比显示面板显示区的尺寸小。\n\n[0073]在一种实施例中，支撑板的尺寸与显示面板显示区的尺寸相同。\n\n[0074]在一种实施例中，弯曲区包括第一弯曲区和第二弯曲区，第一弯曲区和第二弯曲区与显示区相接触，且分别位于在显示区的两对侧。\n\n[0075]在一种实施例中，弯曲区位于显示区的一侧，与显示区相接触。\n\n[0076]在一种实施例中，显示模组内，靠近所述弯曲区的一排Micro-LED的中心点到所述显示模组该侧边缘的距离，小于显示区内两相邻Micro-LED之间距离的一半。在显示模组拼接完成，并组装完显示装置后，要实现显示装置的正常显示，且无暗纹或显示不均的现象发生，则拼接完成的两相邻显示模组之间需要达到均匀混光的效果，即两相邻显示模组内边缘Micro-LED像素之间的距离，需保证小于或等于显示模组内两个相邻Micro-LED像素之间距离。\n\n[0077]在一种实施例中，本发明提供一种显示模组的制备方法，其包括：\n\n[0078]S1、提供显示面板；\n\n[0079]S2、在显示面板的绑定区内，绑定驱动单元；\n\n[0080]S3、去除显示面板的柔性驱动电路基板上的玻璃基板；\n\n[0081]S4、在显示面板的显示区、柔性衬底远离Micro-LED芯片的一侧贴合支撑板；\n\n[0082]S5、将显示面板的弯曲区弯曲，并将显示面板的绑定区贴合于支撑板上。\n\n[0083]在一种实施例中，提供显示面板的具体步骤包括：\n\n[0084]S11、制备柔性驱动电路基板；\n\n[0085]S12、制备Micro-LED芯片；\n\n[0086]S13、将所述Micro-LED芯片转移至所述柔性驱动电路基板上，并与所述柔性驱动电路基板进行连接。\n\n[0087]在一种实施例中，制备柔性驱动电路基板的具体步骤包括：\n\n[0088]S111、提供玻璃基板；\n\n[0089]S112、在玻璃基板上制备柔性衬底；\n\n[0090]S113、在柔性衬底上制备薄膜晶体管层；\n\n[0091]在一种实施例中，去除显示面板的柔性驱动电路基板上的玻璃基板的具体步骤包括：\n\n[0092]S31、采用温敏胶/光敏胶等胶水，将临时基板贴合于显示面板靠近Micro-LED芯片的一侧，临时基板为玻璃基板、TAC基板、PET基板等基板中的一种；\n\n[0093]S32、采用激光剥离的方式，分离显示面板的柔性衬底和玻璃基板，去除玻璃基板。\n\n[0094]在一种实施例中，在显示面板的显示区、柔性衬底远离所述Micro-LED芯片的一侧贴合支撑板的具体步骤包括：\n\n[0095]S41、使用双面胶带或胶水，将支撑板贴合于显示面板的显示区、柔性衬底远离Micro-LED芯片的一侧。\n\n[0096]在一种实施例中，将显示面板的弯曲区弯曲，并将显示面板的绑定区贴合于支撑板上的具体步骤包括：\n\n[0097]S51、将显示面板的弯曲区进行弯曲；\n\n[0098]S52、使用双面胶带或胶水，将显示面板的绑定区贴合于支撑板上。\n\n[0099]根据上述实施例可知：\n\n[0100]本发明提供一种显示面板、显示模组及显示装置，其显示面板包括基板、和Micro-LED；显示模组通过去除显示面板的柔性驱动电路板上的玻璃基板，在显示面板的显示区内、柔性驱动电路板的一侧贴合支撑板，并将柔性驱动电路板的弯曲区弯曲，绑定区与支撑板的另一侧贴合，实现了显示模组的极窄边框设计；再将若干极窄边框的显示模组设置于显示装置背板形成的容纳腔内，进行固定拼接，达到了Micro-LED的窄缝拼接技术，突破了Micro-LED尺寸太小的问题，实现了Micro-LED大尺寸显示，同时，显示模组能够自由拼接，可以拼接成任意尺寸和分辨率的屏幕。\n\n[0101]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及显示领域，尤其涉及一种显示面板、显示模组及显示装置。\n\n背景技术\n\n[0002]微型发光二极管(Micro-LED)由于具有自发光，尺寸小，重量轻，亮度高，更有着寿命更长，功耗更低，响应时间更快，及可控性更强的优点，被视为新一代的显示技术。\n\n[0003]然而，目前由于Micro-LED尺寸太小，还无法实现大尺寸显示的需要。\n\n[0004]因此，现有Micro-LED显示存在尺寸太小，无法实现大尺寸显示的问题，需要解决。\n\n发明内容\n\n[0005]本发明提供一种显示面板、显示模组及显示装置，以缓解现有Micro-LED显示存在尺寸太小，无法实现大尺寸显示的问题。\n\n[0006]为解决以上问题，本发明提供的技术方案如下：\n\n[0007]本发明提供一种显示面板，其包括：\n\n[0008]基板；\n\n[0009]柔性驱动电路板，形成于所述基板上，包括显示区、弯曲区和绑定区，在所述显示区内设置有驱动电路；\n\n[0010]Micro-LED，绑定在所述显示区内，与所述驱动电路对应。\n\n[0011]在本发明提供的显示面板中，所述显示面板还包括封装层。\n\n[0012]在本发明提供的显示面板中，所述柔性驱动电路基板还包括柔性衬底和薄膜晶体管层，所述驱动电路由所述薄膜晶体管层中的薄膜晶体管形成。\n\n[0013]在本发明提供的显示面板中，所述柔性衬底的材料为聚酰亚胺或聚对苯二甲酸乙二醇酯。\n\n[0014]在本发明提供的显示面板中，所述柔性衬底的厚度为10～30μm。\n\n[0015]本发明提供一种显示模组，其包括：\n\n[0016]支撑板；\n\n[0017]显示面板，包括柔性驱动电路基板以及绑定在所述柔性驱动电路基板显示区内的Micro-LED；所述柔性驱动电路基板在显示区内，与所述支撑板贴合；所述柔性驱动电路基板的绑定区通过弯曲区弯曲至所述支撑板的另一侧；\n\n[0018]驱动单元，在所述柔性驱动电路基板的绑定区内，与所述显示面板绑定。\n\n[0019]在本发明提供的显示模组中，所述支撑板的尺寸比所述显示面板显示区的尺寸小。\n\n[0020]在本发明提供的显示模组中，所述弯曲区包括第一弯曲区和第二弯曲区，所述第一弯曲区和所述第二弯曲区与所述显示区相接触，且分别位于在所述显示区的两对侧。\n\n[0021]在本发明提供的显示模组中，靠近所述弯曲区的一排Micro-LED的中心点到所述显示模组该侧边缘的距离，小于显示区内两相邻Micro-LED之间距离的一半。\n\n[0022]同时，本发明还提供一种显示装置，其包括：\n\n[0023]背板，形成容纳腔；\n\n[0024]至少两个如上任一所述的显示模组，至少两个所述显示模组在所述容纳腔内拼接。\n\n[0025]本发明的有益效果为：本发明提供一种显示面板、显示模组及显示装置，其显示面板包括基板、和Micro-LED；显示模组通过去除显示面板的柔性驱动电路板上的玻璃基板，在显示面板的显示区内、柔性驱动电路板的一侧贴合支撑板，并将柔性驱动电路板的弯曲区弯曲，绑定区与支撑板的另一侧贴合，实现了显示模组的极窄边框设计；再将若干极窄边框的显示模组设置于显示装置背板形成的容纳腔内，进行固定拼接，达到了Micro-LED的窄缝拼接技术，突破了Micro-LED尺寸太小的问题，实现了Micro-LED大尺寸显示，同时，显示模组能够自由拼接，可以拼接成任意尺寸和分辨率的屏幕。\n\n附图说明\n\n[0026]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0027]图1为本发明实施例提供的显示面板的结构示意图。\n\n[0028]图2为本发明实施例提供的显示模组的第一种结构示意图。\n\n[0029]图3为本发明实施例提供的显示模组的第二种结构示意图。\n\n[0030]图4为本发明实施例提供的显示装置的结构示意图。\n\n[0031]图5为本发明实施例提供的显示装置的俯视示意图。\n\n具体实施方式\n\n[0032]下面将结合本发明的具体实施方案，对本发明实施方案和/或实施例中的技术方案进行清楚、完整的描述，显而易见的，下面所描述的实施方案和/或实施例仅仅是本发明一部分实施方案和/或实施例，而不是全部的实施方案和/或实施例。基于本发明中的实施方案和/或实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施方案和/或实施例，都属于本发明保护范围。\n\n[0033]本发明所提到的方向用语，例如[上]、[下]、[左]、[右]、[前]、[后]、[内]、[外]、[侧]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明和理解本发明，而非用以限制本发明。术语“第一”、“第二”等仅用于描述目的，而不能理解为指示或是暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”等的特征可以明示或者隐含地包括一个或者更多个该特征。\n\n[0034]针对现有Micro-LED显示存在尺寸太小，无法实现大尺寸显示的问题，本发明提供一种显示面板、显示模组及显示装置可以解决这个问题。\n\n[0035]在一种实施例中，如图1所示，本发明提供的显示面板100包括：\n\n[0036]基板110；\n\n[0037]柔性驱动电路板120，形成于基板110上，包括显示区101、弯曲区102和绑定区103，在显示区101内设置有驱动电路；\n\n[0038]Micro-LED130，绑定在显示区101内，与驱动电路对应。\n\n[0039]本发明实施例通过将显示面板的驱动电路板设置为柔性，为后续显示面板实现柔性特征，显示模组的极窄边框设计，以及Micro-LED显示装置的大尺寸化奠定基础。\n\n[0040]在一种实施例中，如图1所示，显示面板100还包括封装层140，封装层140覆盖柔性驱动电路板120和Micro-LED130，用于保护驱动电路板120和Micro-LED130，封装层140包括第一无机封装层、第二无机封装层、以及位于第一无机封装层和第二无机封装层之间的有机封装层，其中第一无机封装层和第二无机封装层的材料包括氮化硅或氮氧化硅等，其主要用于阻隔显示面板外部的水和氧气，以效防止显示面板外的水或氧气进入到显示面板内。有机封装层的材料包括聚甲基丙烯酸甲酯、甲基丙烯酸甲酯等中的一种或多种，其位于第一无机封装层和第二无机封装层之间有助于改善封装层的柔性。\n\n[0041]在一种实施例中，所述柔性驱动电路基板120还包括柔性衬底121和薄膜晶体管层122，驱动电路由薄膜晶体管层122中的薄膜晶体管形成。\n\n[0042]柔性衬底121为柔性的绝缘性材料制备形成的可弯曲的衬底基板，具有可伸展、可弯曲或可弯曲等特性，其材料可以是聚酰亚胺(Polyimide，简称PI)，可以是聚对苯二甲酸乙二醇酯(Polyethylene Terephthalate，简称PET)，也可以是聚碳酸酯(Polycarbonate，简称PC)，还可以是其他柔性材料，在此不做限制。柔性衬底121的厚度一般为10～30μm。\n\n[0043]薄膜晶体管层122包括有源层、栅极层、源极漏极层、设置在有源层和栅极层之间的栅极绝缘层、设置在栅极与源漏极层之间的层间绝缘层。在本实施例中，薄膜晶体管层122可以是顶栅结构的薄膜晶体管，也可以是底栅结构的薄膜晶体管；可以是单栅极结构薄膜晶体管，也可以是双栅极结构薄膜晶体管，在此不做限定。\n\n[0044]在一种实施例中，Micro-LED130包括绿光Micro-LED、红光Micro-LED和蓝光Micro-LED。绿光Micro-LED用于发出绿光、红光Micro-LED用于发出红光、蓝光Micro-LED用于发出蓝光。Micro-LED包括基板层、以及在基板层上依次层叠设置的本征层、N型氮化镓层、多量子阱层、P型氮化镓层、绝缘层、电流扩散层、保护层、以及N型和p型电极层。基板层一般为蓝宝石基板，多量子阱层设置于N型氮化镓层和P型氮化镓层之间，多量子阱层一般为多层交叠的氮化铟镓层和氮化镓层组成，决定了Micro-LED130的发光颜色，绝缘层和保护层一般为氧化硅或氮化硅等绝缘材料层，电流扩散层的材料一般为透明的氧化铟锡，也可以是石墨烯或其他金属，N型和p型电极层为铂、金、镍、铬等金属中的一种或其合金。\n\n[0045]在另一种实施例中，Micro-LED130包括载体和设于载体上的蓝光Micro-LED，蓝光Micro-LED正装、倒装或垂直装于载体上。蓝光Micro-LED上依次覆有封装胶层、荧光粉胶层、量子点胶层和阻隔水氧层。封装胶层是由防硫化剂、硅橡胶、硅树脂中的一种或多种材料制成。荧光粉胶层是荧光粉分散于透明胶体中得到的，透明胶体为硅胶、聚甲基丙烯酸甲酯、聚碳酸酯或聚苯乙烯的一种或多种，荧光粉的发光波长为450-600nm。量子点胶层是量子点微球分散于透明胶体中得到的，透明胶体为硅胶、聚甲基丙烯酸甲酯、聚碳酸酯或聚苯乙烯的一种或多种，量子点微球大小可大可小，平均粒径范围为0.1-100μm，发光波长的范围为500-750nm。阻隔水氧层包括阻隔水氧薄膜和覆盖于阻隔水氧薄膜上的阻隔水氧胶层。阻隔水氧薄膜为聚酰亚胺薄膜、PET薄膜、PET为基材的复合膜、聚甲基丙烯酸甲酯薄膜或聚乙烯醇薄膜中的一种或多种，阻隔水氧薄膜覆盖载体的内腔体的上表面。阻隔水氧胶层的材料为硅胶、硅橡胶、硅树脂、聚甲基丙烯酸甲酯、聚乙烯醇或环氧树脂中的一种或多种。\n\n[0046]Micro-LED130可以通过巨量转移制程设置在柔性驱动电路基板120上，绑定在显示区内，与柔性驱动电路基板120内的驱动电路对应。巨量转移制程可以通过真空吸附、静电吸附或磁吸附等手段将Micro-LED吸附而转移到柔性驱动电路基板上。Micro-LED130通过粘结层和键合层与柔性驱动电路基板120连接，其中，粘结层用于将Micro-LED芯片胶黏固定在柔性驱动电路基板上；键合层用于将Micro-LED芯片与柔性驱动电路基板上的驱动电路电连接，以确保可实现利用驱动电路驱动Micro-LED芯片发光。粘结层的材料可为本领域技术人员可知的任一种胶黏材料，如光学胶、温敏胶、压敏胶等，在此不做限制。键合层的材料为金属导电材料，如金属焊接材料或导电胶层，金属材料可采用熔接工艺形成键合层，以电连接柔性驱动电路基板上的驱动电路。导电胶层，如低温各向异性导电膜(Anisotropic Conductive Film，ACF)，可采用直接胶黏的方式电连接柔性驱动电路基板上的驱动电路。\n\n[0047]在一种实施例中，如图2、图3所示，本发明提供一种显示模组10，其包括：\n\n[0048]支撑板200；\n\n[0049]显示面板100，包括柔性驱动电路基板120以及绑定在柔性驱动电路基板显示区101内的Micro-LED130；柔性驱动电路基板120在显示区101内，与支撑板200贴合；柔性驱动电路基板120的绑定区103通过弯曲区102弯曲至支撑板200的另一侧；\n\n[0050]驱动单元300，在柔性驱动电路基板120的绑定区102内，与显示面板100绑定。驱动单元300包括覆晶薄膜和印刷电路板。覆晶薄膜的一端通过各向异性导电胶，绑定于显示面板的绑定区，覆晶薄膜的另一端通过各向异性导电胶绑定印刷电路板。\n\n[0051]本发明实施例提供一种显示模组，包括支撑板、显示面板和驱动单元、以及位于显示面板的显示区内贴合显示面板的支撑板，显示面板内柔性驱动电路基板的绑定区，通过弯曲区弯曲至所述支撑板的另一侧，实现了显示模组的极窄边框设计。\n\n[0052]在一种实施例中，支撑板200为具有一定挺性的膜层结构，去除了玻璃基板后的显示面板，由于柔性衬底太过柔软，极易翘曲，不利于后续制程及显示面板的正常显示。支撑板200的材料可以是玻璃、聚合氯化铝等无机材料，也可以是聚酰亚胺、聚对苯二甲酸乙二醇酯等有机材料。当支撑板为玻璃板时，玻璃板的侧边需要进行磨边操作，以防止在后续显示面板弯曲区弯曲的过程中损伤了显示面板。有机材料的支撑板，其材料可以为树脂材料、框胶或其他胶水等材料，同时支撑板的材料可以与柔性衬底的材料相同。\n\n[0053]在一种实施例中，支撑板200的尺寸与显示面板显示区的尺寸相近。支撑板200的尺寸可以与显示面板显示区的尺寸相同，可以比显示面板显示区的尺寸小，也可以比显示面板显示区的尺寸大，可根据实际需要进行设计。\n\n[0054]在一种实施例中，显示模组内，靠近弯曲区的一排Micro-LED的中心点到显示模组该侧边缘的距离D1，小于显示区内两相邻Micro-LED之间距离D2的一半。\n\n[0055]在一种实施例中，如图2所示，显示面板的弯曲区102与支撑板200的侧边接触。由于显示面板的弯曲区102去除了玻璃基板，且未设置支撑板或其他任何阻碍显示面板柔韧性的结构，因此显示面板的弯曲区102具有极佳的弯曲性能，将显示面板的弯曲区102沿支撑板200的边界进行弯曲，且与支撑板200的侧边贴合弯曲，可以实现弯曲后，靠近弯曲区的一排Micro-LED的中心点到显示模组该侧边缘的距离D1最小。在本实施例中，必须保证支撑板200的侧边光滑平整无毛刺，以避免显示面板的弯曲区102弯曲的过程中，损伤了柔性衬底121。\n\n[0056]在一种实施例中，如图3所示，显示面板的弯曲区102与支撑板200的侧边未接触。由于显示面板的弯曲区102内不仅包括柔性衬底121，还包括薄膜晶体管层122，薄膜晶体管层122内包括各有机和无机膜层结构，因此决定了显示面板弯曲区具有一定的刚性，在弯曲的过程中，显示面板的弯曲区受到一定的弯曲应力，导致显示面板的弯曲区102在弯曲后与支撑板200的侧边存在间隙。在本实施例中，显示面板弯曲区的弧度可以通过设计支撑板200的厚度以及在显示面板弯曲区内增加辅助调节膜层进行调节。\n\n[0057]在一种实施例中，如图2所示，弯曲区102包括第一弯曲区和第二弯曲区，第一弯曲区和第二弯曲区与显示区101相接触，且分别位于在显示区101的两对侧。\n\n[0058]在另一种实施例中，如图3所示，弯曲区102位于所述显示区101的一侧，与显示区101相接触。\n\n[0059]在一种实施例中，显示面板还包括封装层。\n\n[0060]在一种实施例中，柔性驱动电路基板还包括柔性衬底和薄膜晶体管层，驱动电路由薄膜晶体管层中的薄膜晶体管形成。\n\n[0061]在一种实施例中，柔性衬底的材料为聚酰亚胺或聚对苯二甲酸乙二醇酯。\n\n[0062]在一种实施例中，柔性衬底的厚度为10～30μm。\n\n[0063]在一种实施例中，如图4、图5所示，本发明提供一种显示装置，其包括：\n\n[0064]背板20，形成容纳腔；\n\n[0065]显示模组10，至少两个显示模组10在容纳腔内拼接；显示模组包括：显示面板、贴合与显示面板显示区内柔性驱动电路基板侧的支撑板、以及显示面板绑定区内柔性驱动电路基板上的驱动单元，其中柔性驱动电路基板的绑定区通过弯曲区弯曲至所述支撑板的另一侧。\n\n[0066]本发明实施例通过将若干极窄边框的显示模组，设置于显示装置背板形成的容纳腔内，进行固定拼接，达到了Micro-LED的窄缝拼接技术，突破了Micro-LED尺寸太小的问题，实现了Micro-LED大尺寸显示，同时，显示模组能够自由拼接，可以拼接成任意尺寸和分辨率的屏幕。\n\n[0067]在一种实施例中，显示面板还包括封装层。\n\n[0068]在一种实施例中，柔性驱动电路基板还包括柔性衬底和薄膜晶体管层，驱动电路由薄膜晶体管层中的薄膜晶体管形成。\n\n[0069]在一种实施例中，柔性衬底的材料为聚酰亚胺或聚对苯二甲酸乙二醇酯。\n\n[0070]在一种实施例中，柔性衬底的厚度为10～30μm。\n\n[0071]在一种实施例中，支撑板的材料为玻璃、聚酰亚胺、聚对苯二甲酸乙二醇酯或聚合氯化铝中的一种。\n\n[0072]在一种实施例中，支撑板的尺寸比显示面板显示区的尺寸小。\n\n[0073]在一种实施例中，支撑板的尺寸与显示面板显示区的尺寸相同。\n\n[0074]在一种实施例中，弯曲区包括第一弯曲区和第二弯曲区，第一弯曲区和第二弯曲区与显示区相接触，且分别位于在显示区的两对侧。\n\n[0075]在一种实施例中，弯曲区位于显示区的一侧，与显示区相接触。\n\n[0076]在一种实施例中，显示模组内，靠近所述弯曲区的一排Micro-LED的中心点到所述显示模组该侧边缘的距离，小于显示区内两相邻Micro-LED之间距离的一半。在显示模组拼接完成，并组装完显示装置后，要实现显示装置的正常显示，且无暗纹或显示不均的现象发生，则拼接完成的两相邻显示模组之间需要达到均匀混光的效果，即两相邻显示模组内边缘Micro-LED像素之间的距离，需保证小于或等于显示模组内两个相邻Micro-LED像素之间距离。\n\n[0077]在一种实施例中，本发明提供一种显示模组的制备方法，其包括：\n\n[0078]S1、提供显示面板；\n\n[0079]S2、在显示面板的绑定区内，绑定驱动单元；\n\n[0080]S3、去除显示面板的柔性驱动电路基板上的玻璃基板；\n\n[0081]S4、在显示面板的显示区、柔性衬底远离Micro-LED芯片的一侧贴合支撑板；\n\n[0082]S5、将显示面板的弯曲区弯曲，并将显示面板的绑定区贴合于支撑板上。\n\n[0083]在一种实施例中，提供显示面板的具体步骤包括：\n\n[0084]S11、制备柔性驱动电路基板；\n\n[0085]S12、制备Micro-LED芯片；\n\n[0086]S13、将所述Micro-LED芯片转移至所述柔性驱动电路基板上，并与所述柔性驱动电路基板进行连接。\n\n[0087]在一种实施例中，制备柔性驱动电路基板的具体步骤包括：\n\n[0088]S111、提供玻璃基板；\n\n[0089]S112、在玻璃基板上制备柔性衬底；\n\n[0090]S113、在柔性衬底上制备薄膜晶体管层；\n\n[0091]在一种实施例中，去除显示面板的柔性驱动电路基板上的玻璃基板的具体步骤包括：\n\n[0092]S31、采用温敏胶/光敏胶等胶水，将临时基板贴合于显示面板靠近Micro-LED芯片的一侧，临时基板为玻璃基板、TAC基板、PET基板等基板中的一种；\n\n[0093]S32、采用激光剥离的方式，分离显示面板的柔性衬底和玻璃基板，去除玻璃基板。\n\n[0094]在一种实施例中，在显示面板的显示区、柔性衬底远离所述Micro-LED芯片的一侧贴合支撑板的具体步骤包括：\n\n[0095]S41、使用双面胶带或胶水，将支撑板贴合于显示面板的显示区、柔性衬底远离Micro-LED芯片的一侧。\n\n[0096]在一种实施例中，将显示面板的弯曲区弯曲，并将显示面板的绑定区贴合于支撑板上的具体步骤包括：\n\n[0097]S51、将显示面板的弯曲区进行弯曲；\n\n[0098]S52、使用双面胶带或胶水，将显示面板的绑定区贴合于支撑板上。\n\n[0099]根据上述实施例可知：\n\n[0100]本发明提供一种显示面板、显示模组及显示装置，其显示面板包括基板、和Micro-LED；显示模组通过去除显示面板的柔性驱动电路板上的玻璃基板，在显示面板的显示区内、柔性驱动电路板的一侧贴合支撑板，并将柔性驱动电路板的弯曲区弯曲，绑定区与支撑板的另一侧贴合，实现了显示模组的极窄边框设计；再将若干极窄边框的显示模组设置于显示装置背板形成的容纳腔内，进行固定拼接，达到了Micro-LED的窄缝拼接技术，突破了Micro-LED尺寸太小的问题，实现了Micro-LED大尺寸显示，同时，显示模组能够自由拼接，可以拼接成任意尺寸和分辨率的屏幕。\n\n[0101]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10683, 23737, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种用于大尺寸的Micro-LED显示的TFT驱动背板及Micro-LED显示器。\n\n背景技术\n\n[0002]Micro-LED技术，即LED微缩化和矩阵化技术，是指在一个芯片上集成的高密度微小尺寸的LED阵列，如LED显示屏每一个像素可定址、单独驱动点亮，将像素点距离从毫米级降低至微米级。Micro-LED的一个重要应用领域是超大尺寸的显示。\n\n[0003]目前，Micro-LED所用的驱动背板为顶栅低温多晶硅薄膜晶体管(Top Gate LTPSTFT)。目前低温多晶体硅薄膜晶体管(LTPS)仅能在6代线(玻璃尺寸1.5米×1.85米)进行生产，母板玻璃尺寸较小，在针对超大尺寸的应用方面产能容易遇到瓶颈。\n\n[0004]另外，在大尺寸的Micro-LED应用中多采用拼接技术。常规面板的边缘区域为走线和与驱动芯片连接的区域，通常为3-50mm。因此在拼接时的边框会形成黑线，影响显示效果。\n\n[0005]因此，如何减少拼接时的边框并减少制备薄膜晶体管驱动背板时的工艺步骤，是目前面向Micro-LED显示应用技术发展急需解决的技术问题。\n\n发明内容\n\n[0006]本发明的目的在于，针对现有技术存在的问题，提供一种TFT驱动背板及Micro-LED显示器，可以实现满足大尺寸Micro-LED显示需求，减少拼接时的边框并减少制备薄膜晶体管驱动背板时的工艺步骤。\n\n[0007]为实现上述目的，本发明提供了一种TFT驱动背板，包括：一衬底基板；至少一薄膜晶体管，设于所述衬底基板的上方，所述薄膜晶体管包括一有源层；至少一金属光阻挡层，设于所述衬底基板的下表面并相对于所述有源层的位置，用于对所述有源层进行遮光保护；以及一金属走线层，设于所述衬底基板的侧面以及所述金属光阻挡层的下方，用于连接外部驱动芯片。\n\n[0008]为实现上述目的，本发明还提供了一种Micro-LED显示器，所述Micro-LED显示器包括本发明所述的TFT驱动背板。\n\n[0009]本发明的优点在于：本发明通过在衬底基板的侧面以及下方制备用于连接驱动芯片的金属走线层，减少了大尺寸的Micro-LED应用中面板拼接时的边框；通过在制备金属走线层的同时，在衬底基板的下表面并相对于所述有源层的位置制备用于阻挡环境光的金属光阻挡层，可以在制备薄膜晶体管的时候节省原有的金属遮光层的沉积和图形化步骤，减少了制备TFT驱动背板时的工艺步骤，节约制备成本。\n\n附图说明\n\n[0010]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。\n\n[0011]图1A，本发明TFT驱动背板第一实施例的层状结构示意图；\n\n[0012]图1B，现有TFT阵列基板第一实施例的层状结构示意图；\n\n[0013]图2A，本发明TFT驱动背板第二实施例的层状结构示意图；\n\n[0014]图2B，现有TFT阵列基板第二实施例的层状结构示意图；\n\n[0015]图3，不同波长的光对薄膜晶体管电性的影响示意图。\n\n具体实施方式\n\n[0016]下面详细描述本发明的实施方式，所述实施方式的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的组件或具有相同或类似功能的组件。本发明所提到的方向用语，例如：上、下、左、右、前、后、内、外、侧面等，仅是参考附图的方向。以下通过参考附图描述的实施方式及使用的方向用语是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其它工艺的应用和/或其它材料的使用。\n\n[0017]本发明提出了一种新型的适用于大尺寸Micro-LED应用的TFT驱动背板，所述TFT驱动背板包括：一衬底基板；至少一薄膜晶体管，设于所述衬底基板的上方，所述薄膜晶体管包括一有源层；至少一金属光阻挡层(Metal Light Shield Layer)，设于所述衬底基板的下表面并相对于所述有源层的位置，用于对所述有源层进行遮光保护；以及一金属走线层，设于所述衬底基板的侧面以及所述金属光阻挡层的下方，用于连接外部驱动芯片。\n\n[0018]可选地，所述薄膜晶体管可以为顶栅氧化物薄膜晶体管，或采用顶栅低温多晶硅技术制成的顶栅低温多晶硅薄膜晶体管。\n\n[0019]可选地，所述薄膜晶体管包括单层源/漏金属层或多层源/漏金属层。\n\n[0020]具体的，所述TFT驱动背板进一步包括：依次设于所述有源层的沟道区表面的一栅极绝缘层及一栅极金属层，所述栅极金属层构成所述薄膜晶体管的栅极；一介电绝缘层，覆盖所述衬底基板、所述有源层、所述栅极绝缘层及所述栅极金属层；以及一源/漏极金属层，设于所述介电绝缘层上，所述源/漏极金属层构成所述薄膜晶体管的源/漏极，所述源/漏极通过通孔与所述有源层的源/漏极接触区相接触。\n\n[0021]采用本发明TFT驱动背板，可以将驱动芯片放置在驱动背板的背面，以压缩面板边框，可以减少大尺寸的Micro-LED应用中面板拼接时的边框，满足大尺寸Micro-LED显示需求。同时，金属光阻挡层能够起到与现有薄膜晶体管中金属遮光层(Shield Metal Layer)相同的作用，因此本发明驱动背板的薄膜晶体管中不再需要金属遮光层，从而在制备薄膜晶体管的时候可以节省原有的金属遮光层的沉积和图形化步骤，进而减少制备TFT驱动背板时的工艺步骤，节约制备成本。\n\n[0022]请参阅图1A-1B，其中图1A为本发明TFT驱动背板第一实施例的层状结构示意图，图1B现有TFT阵列基板第一实施例的层状结构示意图作为对比。\n\n[0023]如图1A所示，在本实施例中，本发明TFT驱动背板包括：一衬底基板100；至少一设于所述衬底基板100上方的薄膜晶体管(其结构在后文详述)，所述薄膜晶体管包括一有源层(Act)102，所述有源层102包括沟道区1022；至少一金属光阻挡层(Metal Light ShieldLayer)121，设于所述衬底基板100的下表面并相对于所述有源层102的位置，用于对所述有源层102进行遮光保护；一背面绝缘层122，设于所述金属光阻挡层121下表面并覆盖所述金属光阻挡层121及所述衬底基板100下表面；以及一金属走线层123，设于所述衬底基板的侧面以及所述背面绝缘层122的下表面，并通过形成在所述背面绝缘层122上的通孔与所述金属光阻挡层121相接触，用于连接外部驱动芯片。即，在衬底基板100的背面制备金属走线层123的同时制备金属光阻挡层121，金属光阻挡层121能够起到与现有薄膜晶体管中金属遮光层相同的作用，从而在制备薄膜晶体管的时候可以节省原有的金属遮光层的沉积和图形化步骤。\n\n[0024]具体的，所述金属光阻挡层121的材料为具有光阻挡作用的金属，例如IZO、CuCa叠加构成的复合层，也可以为其它具有光阻挡作用的金属材料。优选的，所述金属光阻挡层121的长度和宽度均大于所述有源层102的沟道区1022的长度和宽度，且两者中心对齐，从而有效阻挡环境光，以对所述有源层102进行遮光保护。\n\n[0025]具体的，所述背面绝缘层122可以为氧化硅(SiOx)层，或氮化硅(SiNx)层，或氮氧化硅(SiOxNy)层。\n\n[0026]具体的，所述金属走线层123用于连接外部驱动芯片，以传输外部驱动芯片的驱动IC信号到显示区域。从而可以将驱动芯片放置在驱动背板的背面，以压缩面板边框。优选地，金属走线层123采用透明导电材料(ITO)制成。\n\n[0027]本发明通过在制备金属走线层的同时，在衬底基板的下表面并相对于所述有源层的位置制备用于阻挡环境光的金属光阻挡层，可以在制备薄膜晶体管的时候节省原有的金属遮光层的沉积和图形化步骤，减少了制备TFT驱动背板时的工艺步骤，节约制备成本。\n\n[0028]在本实施例中，所述薄膜晶体管采用顶栅低温多晶硅(Low Temperature Poly-silicon，简称LTPS)技术制成。LTPS技术是通过成膜、曝光、蚀刻叠加不同图形不同材质的膜层以形成低温多晶硅驱动电路，其为发光器件提供点亮信号以及稳定的电源输入。\n\n[0029]优选地，在本实施例中，衬底基板100与有源层102之间还设有缓冲层(Buffer)101。\n\n[0030]具体的，在本实施例中，所述TFT驱动背板包括：设于所述衬底基板100上(或设于所述缓冲层101上)的一有源层(Act)102，设于所述有源层102上并覆盖所述有源层102及所述衬底基板100(或所述缓冲层101)的一第一栅极绝缘层(GI1)103，设于所述第一栅极绝缘层103上的一第一栅极金属层(GE1)104，设于所述第一栅极金属层104上并覆盖所述第一栅极金属层104及所述第一栅极绝缘层103的一第二栅极绝缘层(GI2)105，设于所述第二栅极绝缘层105上的一第二栅极金属层(GE2)106，设于所述第二栅极金属层106上并覆盖所述第二栅极金属层106及所述第二栅极绝缘层105的一介电绝缘层107，设于所述介电绝缘层107上的一第一源/漏极金属层(S/D1)108，以及设于所述第一源/漏极金属层108上并覆盖所述第一源/漏极金属层108及所述介电绝缘层107的一第一钝化层(VIA1)109。\n\n[0031]所述第一栅极金属层104包括图案化的栅极1041以及所述TFT驱动背板的电容的一第一极板1042，所述第二栅极金属层106包括所述电容的一第二极板1061；所述有源层102包括对应于所述栅极1041的沟道区1022，及位于所述沟道区1022两侧的源/漏极接触区1021；所述第一源/漏极金属层108包括图案化的源/漏极1081，所述源/漏极1081通过通孔与所述源/漏极接触区1021相接触。所述有源层102、所述栅极1041、所述源/漏极1081构成所述TFT驱动背板的薄膜晶体管。\n\n[0032]优选地，在本实施例中，所述TFT驱动背板还包括：设于所述第一钝化层109上的一第二源/漏极金属层(S/D2)110，设于所述第二源/漏极金属层110上并覆盖所述第二源/漏极金属层110的一第二钝化层(VIA2)111，设于所述第二钝化层111上的一第三源/漏极金属层(S/D3)112，以及设于所述第三源/漏极金属层112上的一第一透明导电层(ITO1)113。所述第二源/漏极金属层110包括电极连接线1101及第一驱动电源线1102，所述电极连接线1101及所述第一驱动电源线1102分别通过相应的通孔与所述源/漏极1081电连接。所述第三源/漏极金属层112包括图案化的阳极(Anode)1121及第二驱动电源线1122，所述阳极1121通过通孔与所述电极连接线1101相连接。所述第一透明导电层112作为像素电极。本实施例中，所述第一驱动电源线1102用于提供电压驱动信号(VDD)，所述第二驱动电源线112用于提供电源开关信号(VSS)。\n\n[0033]本实施例中，所述第二钝化层111上设有一第三钝化层(VIA3)114，通过对所述第三钝化层115蚀刻，以暴露出所述阳极1121及所述第二驱动电源线1122的制备区域。\n\n[0034]在本实施例中，所述TFT驱动背板采用三层源/漏金属层。需要说明的是，作为LTPS的主流技术，采用单层源/漏金属层或两层及以上的多层源/漏金属层都是可以采用改进后的本发明所述TFT驱动背板的结构，即在背板背面相对于有源层位置设置一层金属光阻挡层。\n\n[0035]具体的，所述衬底基板100可以玻璃基板或采用高分子聚合物制备的柔性基板，高分子聚合物可以为聚酰亚胺(PI)。\n\n[0036]具体的，所述缓冲层213可以为氧化硅(SiOx)层或氮化硅(SiNx)层，或者由氧化硅层与氮化硅层叠加构成的复合层。\n\n[0037]具体的，所述第一钝化层(VIA1)107、第二钝化层(VIA2)109、第三钝化层(VIA3)113可以采用相同材料制成。\n\n[0038]作为对比，如图1B所示，现有技术中TFT阵列基板包括依次层叠设置的一衬底基板100b、一金属遮光层(Shield Metal Layer)121b、一缓冲层101b、一有源层102b、一第一栅极绝缘层(GI1)103b、一第一栅极金属层(GE1)104b、一第二栅极绝缘层(GI2)105b、一第二栅极金属层(GE2)106b、一介电绝缘层(ILD)107b、一第一源/漏极金属层(S/D1)108b以及一第一钝化层(VIA1)109b。采用现有技术中TFT阵列基板的驱动背板还包括：在所述第一钝化层109b上依次层叠设置的一第二源/漏极金属层(S/D2)110b、一第二钝化层(VIA2)111b、一第三源/漏极金属层(S/D3)112b、一第一透明导电层(ITO1)113b、以及一第三钝化层(VIA3)114b。也即，现有技术中，在制备薄膜晶体管的时候，需要金属遮光层的沉积和图形化步骤。\n\n[0039]请参阅图2A-2B，其中图2A为本发明TFT驱动背板第二实施例的层状结构示意图，图2B现有TFT阵列基板第二实施例的层状结构示意图作为对比。与图1A所示实施例的不同之处在于，在本实施例中所述薄膜晶体管为顶栅氧化物薄膜晶体管。\n\n[0040]具体的，如图2A所示，所述TFT驱动背板包括：一衬底基板200，设于所述衬底基板200上(或设于制备在所述衬底基板200上的一缓冲层201上)的一有源层(Act)202，设于所述有源层202上的一栅极绝缘层(GI)203，设于所述栅极绝缘层203上的一栅极金属层(GE)204，设于所述栅极金属层204上并覆盖所述栅极金属层204、所述栅极绝缘层203、所述有源层202及所述衬底基板200(或缓冲层201)的一介电绝缘层(ILD)205，设于所述介电绝缘层205上的一第一源/漏极金属层(S/D1)206，以及设于所述第一源/漏极金属层206上并覆盖所述第一源/漏极金属层206及所述介电绝缘层205的一第一钝化层(VIA1)207。\n\n[0041]所述栅极金属层204包括图案化的栅极2041；所述有源层202包括对应于所述栅极2041的沟道区2022，及位于所述沟道区2022两侧的源/漏极接触区2021；所述第一源/漏极金属层206包括图案化的源/漏极2061，所述源/漏极2061通过通孔与所述源/漏极接触区2021相接触。所述有源层202、所述栅极2041、所述源/漏极2061构成所述TFT驱动背板的薄膜晶体管。\n\n[0042]优选地，在本实施例中，所述TFT驱动背板还包括：设于所述第一钝化层207上的一第二源/漏极金属层(S/D2)208，设于所述第二源/漏极金属层208上并覆盖所述第二源/漏极金属层208的一第二钝化层(VIA2)209，设于所述第二钝化层209上的一第三源/漏极金属层(S/D3)210，以及设于所述第三源/漏极金属层210上的一第一透明导电层(ITO1)211。\n\n[0043]所述第二源/漏极金属层208包括电极连接线2081及第一驱动电源线2082，所述电极连接线2081及所述第一驱动电源线2082分别通过相应的通孔与所述源/漏极2061电连接。所述第三源/漏极金属层210包括图案化的阳极(Anode)2101及第二驱动电源线2102，所述阳极2101通过通孔与所述电极连接线2081相连接。所述第一透明导电层211作为像素电极。本实施例中，所述第一驱动电源线2082用于提供电压驱动信号(VDD)，所述第二驱动电源线2102用于提供电源开关信号(VSS)。在其它实施例中，所述第三源/漏极金属层111也可以包括阴极。\n\n[0044]本实施例中，所述第二钝化层209上设有一第三钝化层(VIA3)212，通过对所述第三钝化层212蚀刻，以暴露出所述阳极2101及所述第二驱动电源线2102的制备区域。\n\n[0045]在本实施例中，所述TFT驱动背板采用三层源/漏金属层。需要说明的是，采用单层源/漏金属层或两层及以上的多层源/漏金属层都是可以采用改进后的本发明所述TFT驱动背板的结构，即在背板背面相对于有源层位置设置一层金属光阻挡层。\n\n[0046]所述衬底基板200的下表面并相对于所述有源层202的位置，设有一金属光阻挡层(Metal Light Shield Layer)221，用于对所述有源层102进行遮光保护；一背面绝缘层222，设于所述金属光阻挡层221下表面并覆盖所述金属光阻挡层221及所述衬底基板200下表面；以及一金属走线层223，设于所述衬底基板200的侧面以及所述背面绝缘层222的下表面，并通过形成在所述背面绝缘层222上的通孔与所述金属光阻挡层221相接触，用于连接外部驱动芯片。即，在衬底基板200的背面制备金属走线层223的同时制备金属光阻挡层221，金属光阻挡层221能够起到与现有薄膜晶体管中金属遮光层相同的作用，从而在制备薄膜晶体管的时候可以节省原有的金属遮光层的沉积和图形化步骤。\n\n[0047]作为对比，如图2B所示，现有技术中TFT阵列基板包括依次层叠设置的一衬底基板200b、一金属遮光层(Shield Metal Layer)221b、一缓冲层201b、一有源层202b、一栅极绝缘层(GI)203b、一栅极金属层(GE)204b、一介电绝缘层(ILD)205b、一第一源/漏极金属层(S/D1)206b以及一第一钝化层(VIA1)207b。采用现有技术中TFT阵列基板的驱动背板还包括：在所述第一钝化层207b上依次层叠设置的一第二源/漏极金属层(S/D2)208b、一第二钝化层(VIA2)209b、一第三源/漏极金属层(S/D3)210b、一第一透明导电层(ITO1)211b、以及一第三钝化层(VIA3)212b。也即，现有技术中，在制备薄膜晶体管的时候，需要金属遮光层的沉积和图形化步骤。\n\n[0048]请参阅图3，不同波长的光对薄膜晶体管电性的影响示意图。如图2所示，横坐标为栅极电压VGS(单位为伏特(V))，纵坐标为源/漏极电流IDS(单位为安培(A))，图中曲线用于示意波长(λ)为365nm到700nm的光对薄膜晶体管电性的影响。由图示可以看出，365nm到700nm的光对薄膜晶体管器件的电性特性具有明显的影响，而本发明TFT驱动背板，通过在制备金属走线层的同时，在衬底基板的下表面并相对于所述有源层的位置制备用于阻挡环境光的金属光阻挡层，可以提升薄膜晶体管器件对环境光的抵抗能力，从而可以在制备薄膜晶体管的时候节省原有的金属遮光层的沉积和图形化步骤，减少了制备TFT驱动背板时的工艺步骤，节约制备成本。\n\n[0049]基于同一发明构思，本发明还提供了一种Micro-LED显示器，所述Micro-LED显示器包括一TFT驱动背板，所述TFT驱动背板采用本发明上述的TFT驱动背板。本发明Micro-LED显示器采用在制备金属走线层的同时，在衬底基板的下表面并相对于所述有源层的位置制备用于阻挡环境光的金属光阻挡层，可以实现满足大尺寸Micro-LED显示需求，减少了大尺寸的Micro-LED应用中面板拼接时的边框，且在制备薄膜晶体管的时候可以节省原有的金属遮光层的沉积和图形化步骤，减少了制备TFT驱动背板时的工艺步骤，节约制备成本。\n\n[0050]以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种用于大尺寸的Micro-LED显示的TFT驱动背板及Micro-LED显示器。\n\n背景技术\n\n[0002]Micro-LED技术，即LED微缩化和矩阵化技术，是指在一个芯片上集成的高密度微小尺寸的LED阵列，如LED显示屏每一个像素可定址、单独驱动点亮，将像素点距离从毫米级降低至微米级。Micro-LED的一个重要应用领域是超大尺寸的显示。\n\n[0003]目前，Micro-LED所用的驱动背板为顶栅低温多晶硅薄膜晶体管(Top Gate LTPSTFT)。目前低温多晶体硅薄膜晶体管(LTPS)仅能在6代线(玻璃尺寸1.5米×1.85米)进行生产，母板玻璃尺寸较小，在针对超大尺寸的应用方面产能容易遇到瓶颈。\n\n[0004]另外，在大尺寸的Micro-LED应用中多采用拼接技术。常规面板的边缘区域为走线和与驱动芯片连接的区域，通常为3-50mm。因此在拼接时的边框会形成黑线，影响显示效果。\n\n[0005]因此，如何减少拼接时的边框并减少制备薄膜晶体管驱动背板时的工艺步骤，是目前面向Micro-LED显示应用技术发展急需解决的技术问题。\n\n发明内容\n\n[0006]本发明的目的在于，针对现有技术存在的问题，提供一种TFT驱动背板及Micro-LED显示器，可以实现满足大尺寸Micro-LED显示需求，减少拼接时的边框并减少制备薄膜晶体管驱动背板时的工艺步骤。\n\n[0007]为实现上述目的，本发明提供了一种TFT驱动背板，包括：一衬底基板；至少一薄膜晶体管，设于所述衬底基板的上方，所述薄膜晶体管包括一有源层；至少一金属光阻挡层，设于所述衬底基板的下表面并相对于所述有源层的位置，用于对所述有源层进行遮光保护；以及一金属走线层，设于所述衬底基板的侧面以及所述金属光阻挡层的下方，用于连接外部驱动芯片。\n\n[0008]为实现上述目的，本发明还提供了一种Micro-LED显示器，所述Micro-LED显示器包括本发明所述的TFT驱动背板。\n\n[0009]本发明的优点在于：本发明通过在衬底基板的侧面以及下方制备用于连接驱动芯片的金属走线层，减少了大尺寸的Micro-LED应用中面板拼接时的边框；通过在制备金属走线层的同时，在衬底基板的下表面并相对于所述有源层的位置制备用于阻挡环境光的金属光阻挡层，可以在制备薄膜晶体管的时候节省原有的金属遮光层的沉积和图形化步骤，减少了制备TFT驱动背板时的工艺步骤，节约制备成本。\n\n附图说明\n\n[0010]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。\n\n[0011]图1A，本发明TFT驱动背板第一实施例的层状结构示意图；\n\n[0012]图1B，现有TFT阵列基板第一实施例的层状结构示意图；\n\n[0013]图2A，本发明TFT驱动背板第二实施例的层状结构示意图；\n\n[0014]图2B，现有TFT阵列基板第二实施例的层状结构示意图；\n\n[0015]图3，不同波长的光对薄膜晶体管电性的影响示意图。\n\n具体实施方式\n\n[0016]下面详细描述本发明的实施方式，所述实施方式的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的组件或具有相同或类似功能的组件。本发明所提到的方向用语，例如：上、下、左、右、前、后、内、外、侧面等，仅是参考附图的方向。以下通过参考附图描述的实施方式及使用的方向用语是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其它工艺的应用和/或其它材料的使用。\n\n[0017]本发明提出了一种新型的适用于大尺寸Micro-LED应用的TFT驱动背板，所述TFT驱动背板包括：一衬底基板；至少一薄膜晶体管，设于所述衬底基板的上方，所述薄膜晶体管包括一有源层；至少一金属光阻挡层(Metal Light Shield Layer)，设于所述衬底基板的下表面并相对于所述有源层的位置，用于对所述有源层进行遮光保护；以及一金属走线层，设于所述衬底基板的侧面以及所述金属光阻挡层的下方，用于连接外部驱动芯片。\n\n[0018]可选地，所述薄膜晶体管可以为顶栅氧化物薄膜晶体管，或采用顶栅低温多晶硅技术制成的顶栅低温多晶硅薄膜晶体管。\n\n[0019]可选地，所述薄膜晶体管包括单层源/漏金属层或多层源/漏金属层。\n\n[0020]具体的，所述TFT驱动背板进一步包括：依次设于所述有源层的沟道区表面的一栅极绝缘层及一栅极金属层，所述栅极金属层构成所述薄膜晶体管的栅极；一介电绝缘层，覆盖所述衬底基板、所述有源层、所述栅极绝缘层及所述栅极金属层；以及一源/漏极金属层，设于所述介电绝缘层上，所述源/漏极金属层构成所述薄膜晶体管的源/漏极，所述源/漏极通过通孔与所述有源层的源/漏极接触区相接触。\n\n[0021]采用本发明TFT驱动背板，可以将驱动芯片放置在驱动背板的背面，以压缩面板边框，可以减少大尺寸的Micro-LED应用中面板拼接时的边框，满足大尺寸Micro-LED显示需求。同时，金属光阻挡层能够起到与现有薄膜晶体管中金属遮光层(Shield Metal Layer)相同的作用，因此本发明驱动背板的薄膜晶体管中不再需要金属遮光层，从而在制备薄膜晶体管的时候可以节省原有的金属遮光层的沉积和图形化步骤，进而减少制备TFT驱动背板时的工艺步骤，节约制备成本。\n\n[0022]请参阅图1A-1B，其中图1A为本发明TFT驱动背板第一实施例的层状结构示意图，图1B现有TFT阵列基板第一实施例的层状结构示意图作为对比。\n\n[0023]如图1A所示，在本实施例中，本发明TFT驱动背板包括：一衬底基板100；至少一设于所述衬底基板100上方的薄膜晶体管(其结构在后文详述)，所述薄膜晶体管包括一有源层(Act)102，所述有源层102包括沟道区1022；至少一金属光阻挡层(Metal Light ShieldLayer)121，设于所述衬底基板100的下表面并相对于所述有源层102的位置，用于对所述有源层102进行遮光保护；一背面绝缘层122，设于所述金属光阻挡层121下表面并覆盖所述金属光阻挡层121及所述衬底基板100下表面；以及一金属走线层123，设于所述衬底基板的侧面以及所述背面绝缘层122的下表面，并通过形成在所述背面绝缘层122上的通孔与所述金属光阻挡层121相接触，用于连接外部驱动芯片。即，在衬底基板100的背面制备金属走线层123的同时制备金属光阻挡层121，金属光阻挡层121能够起到与现有薄膜晶体管中金属遮光层相同的作用，从而在制备薄膜晶体管的时候可以节省原有的金属遮光层的沉积和图形化步骤。\n\n[0024]具体的，所述金属光阻挡层121的材料为具有光阻挡作用的金属，例如IZO、CuCa叠加构成的复合层，也可以为其它具有光阻挡作用的金属材料。优选的，所述金属光阻挡层121的长度和宽度均大于所述有源层102的沟道区1022的长度和宽度，且两者中心对齐，从而有效阻挡环境光，以对所述有源层102进行遮光保护。\n\n[0025]具体的，所述背面绝缘层122可以为氧化硅(SiOx)层，或氮化硅(SiNx)层，或氮氧化硅(SiOxNy)层。\n\n[0026]具体的，所述金属走线层123用于连接外部驱动芯片，以传输外部驱动芯片的驱动IC信号到显示区域。从而可以将驱动芯片放置在驱动背板的背面，以压缩面板边框。优选地，金属走线层123采用透明导电材料(ITO)制成。\n\n[0027]本发明通过在制备金属走线层的同时，在衬底基板的下表面并相对于所述有源层的位置制备用于阻挡环境光的金属光阻挡层，可以在制备薄膜晶体管的时候节省原有的金属遮光层的沉积和图形化步骤，减少了制备TFT驱动背板时的工艺步骤，节约制备成本。\n\n[0028]在本实施例中，所述薄膜晶体管采用顶栅低温多晶硅(Low Temperature Poly-silicon，简称LTPS)技术制成。LTPS技术是通过成膜、曝光、蚀刻叠加不同图形不同材质的膜层以形成低温多晶硅驱动电路，其为发光器件提供点亮信号以及稳定的电源输入。\n\n[0029]优选地，在本实施例中，衬底基板100与有源层102之间还设有缓冲层(Buffer)101。\n\n[0030]具体的，在本实施例中，所述TFT驱动背板包括：设于所述衬底基板100上(或设于所述缓冲层101上)的一有源层(Act)102，设于所述有源层102上并覆盖所述有源层102及所述衬底基板100(或所述缓冲层101)的一第一栅极绝缘层(GI1)103，设于所述第一栅极绝缘层103上的一第一栅极金属层(GE1)104，设于所述第一栅极金属层104上并覆盖所述第一栅极金属层104及所述第一栅极绝缘层103的一第二栅极绝缘层(GI2)105，设于所述第二栅极绝缘层105上的一第二栅极金属层(GE2)106，设于所述第二栅极金属层106上并覆盖所述第二栅极金属层106及所述第二栅极绝缘层105的一介电绝缘层107，设于所述介电绝缘层107上的一第一源/漏极金属层(S/D1)108，以及设于所述第一源/漏极金属层108上并覆盖所述第一源/漏极金属层108及所述介电绝缘层107的一第一钝化层(VIA1)109。\n\n[0031]所述第一栅极金属层104包括图案化的栅极1041以及所述TFT驱动背板的电容的一第一极板1042，所述第二栅极金属层106包括所述电容的一第二极板1061；所述有源层102包括对应于所述栅极1041的沟道区1022，及位于所述沟道区1022两侧的源/漏极接触区1021；所述第一源/漏极金属层108包括图案化的源/漏极1081，所述源/漏极1081通过通孔与所述源/漏极接触区1021相接触。所述有源层102、所述栅极1041、所述源/漏极1081构成所述TFT驱动背板的薄膜晶体管。\n\n[0032]优选地，在本实施例中，所述TFT驱动背板还包括：设于所述第一钝化层109上的一第二源/漏极金属层(S/D2)110，设于所述第二源/漏极金属层110上并覆盖所述第二源/漏极金属层110的一第二钝化层(VIA2)111，设于所述第二钝化层111上的一第三源/漏极金属层(S/D3)112，以及设于所述第三源/漏极金属层112上的一第一透明导电层(ITO1)113。所述第二源/漏极金属层110包括电极连接线1101及第一驱动电源线1102，所述电极连接线1101及所述第一驱动电源线1102分别通过相应的通孔与所述源/漏极1081电连接。所述第三源/漏极金属层112包括图案化的阳极(Anode)1121及第二驱动电源线1122，所述阳极1121通过通孔与所述电极连接线1101相连接。所述第一透明导电层112作为像素电极。本实施例中，所述第一驱动电源线1102用于提供电压驱动信号(VDD)，所述第二驱动电源线112用于提供电源开关信号(VSS)。\n\n[0033]本实施例中，所述第二钝化层111上设有一第三钝化层(VIA3)114，通过对所述第三钝化层115蚀刻，以暴露出所述阳极1121及所述第二驱动电源线1122的制备区域。\n\n[0034]在本实施例中，所述TFT驱动背板采用三层源/漏金属层。需要说明的是，作为LTPS的主流技术，采用单层源/漏金属层或两层及以上的多层源/漏金属层都是可以采用改进后的本发明所述TFT驱动背板的结构，即在背板背面相对于有源层位置设置一层金属光阻挡层。\n\n[0035]具体的，所述衬底基板100可以玻璃基板或采用高分子聚合物制备的柔性基板，高分子聚合物可以为聚酰亚胺(PI)。\n\n[0036]具体的，所述缓冲层213可以为氧化硅(SiOx)层或氮化硅(SiNx)层，或者由氧化硅层与氮化硅层叠加构成的复合层。\n\n[0037]具体的，所述第一钝化层(VIA1)107、第二钝化层(VIA2)109、第三钝化层(VIA3)113可以采用相同材料制成。\n\n[0038]作为对比，如图1B所示，现有技术中TFT阵列基板包括依次层叠设置的一衬底基板100b、一金属遮光层(Shield Metal Layer)121b、一缓冲层101b、一有源层102b、一第一栅极绝缘层(GI1)103b、一第一栅极金属层(GE1)104b、一第二栅极绝缘层(GI2)105b、一第二栅极金属层(GE2)106b、一介电绝缘层(ILD)107b、一第一源/漏极金属层(S/D1)108b以及一第一钝化层(VIA1)109b。采用现有技术中TFT阵列基板的驱动背板还包括：在所述第一钝化层109b上依次层叠设置的一第二源/漏极金属层(S/D2)110b、一第二钝化层(VIA2)111b、一第三源/漏极金属层(S/D3)112b、一第一透明导电层(ITO1)113b、以及一第三钝化层(VIA3)114b。也即，现有技术中，在制备薄膜晶体管的时候，需要金属遮光层的沉积和图形化步骤。\n\n[0039]请参阅图2A-2B，其中图2A为本发明TFT驱动背板第二实施例的层状结构示意图，图2B现有TFT阵列基板第二实施例的层状结构示意图作为对比。与图1A所示实施例的不同之处在于，在本实施例中所述薄膜晶体管为顶栅氧化物薄膜晶体管。\n\n[0040]具体的，如图2A所示，所述TFT驱动背板包括：一衬底基板200，设于所述衬底基板200上(或设于制备在所述衬底基板200上的一缓冲层201上)的一有源层(Act)202，设于所述有源层202上的一栅极绝缘层(GI)203，设于所述栅极绝缘层203上的一栅极金属层(GE)204，设于所述栅极金属层204上并覆盖所述栅极金属层204、所述栅极绝缘层203、所述有源层202及所述衬底基板200(或缓冲层201)的一介电绝缘层(ILD)205，设于所述介电绝缘层205上的一第一源/漏极金属层(S/D1)206，以及设于所述第一源/漏极金属层206上并覆盖所述第一源/漏极金属层206及所述介电绝缘层205的一第一钝化层(VIA1)207。\n\n[0041]所述栅极金属层204包括图案化的栅极2041；所述有源层202包括对应于所述栅极2041的沟道区2022，及位于所述沟道区2022两侧的源/漏极接触区2021；所述第一源/漏极金属层206包括图案化的源/漏极2061，所述源/漏极2061通过通孔与所述源/漏极接触区2021相接触。所述有源层202、所述栅极2041、所述源/漏极2061构成所述TFT驱动背板的薄膜晶体管。\n\n[0042]优选地，在本实施例中，所述TFT驱动背板还包括：设于所述第一钝化层207上的一第二源/漏极金属层(S/D2)208，设于所述第二源/漏极金属层208上并覆盖所述第二源/漏极金属层208的一第二钝化层(VIA2)209，设于所述第二钝化层209上的一第三源/漏极金属层(S/D3)210，以及设于所述第三源/漏极金属层210上的一第一透明导电层(ITO1)211。\n\n[0043]所述第二源/漏极金属层208包括电极连接线2081及第一驱动电源线2082，所述电极连接线2081及所述第一驱动电源线2082分别通过相应的通孔与所述源/漏极2061电连接。所述第三源/漏极金属层210包括图案化的阳极(Anode)2101及第二驱动电源线2102，所述阳极2101通过通孔与所述电极连接线2081相连接。所述第一透明导电层211作为像素电极。本实施例中，所述第一驱动电源线2082用于提供电压驱动信号(VDD)，所述第二驱动电源线2102用于提供电源开关信号(VSS)。在其它实施例中，所述第三源/漏极金属层111也可以包括阴极。\n\n[0044]本实施例中，所述第二钝化层209上设有一第三钝化层(VIA3)212，通过对所述第三钝化层212蚀刻，以暴露出所述阳极2101及所述第二驱动电源线2102的制备区域。\n\n[0045]在本实施例中，所述TFT驱动背板采用三层源/漏金属层。需要说明的是，采用单层源/漏金属层或两层及以上的多层源/漏金属层都是可以采用改进后的本发明所述TFT驱动背板的结构，即在背板背面相对于有源层位置设置一层金属光阻挡层。\n\n[0046]所述衬底基板200的下表面并相对于所述有源层202的位置，设有一金属光阻挡层(Metal Light Shield Layer)221，用于对所述有源层102进行遮光保护；一背面绝缘层222，设于所述金属光阻挡层221下表面并覆盖所述金属光阻挡层221及所述衬底基板200下表面；以及一金属走线层223，设于所述衬底基板200的侧面以及所述背面绝缘层222的下表面，并通过形成在所述背面绝缘层222上的通孔与所述金属光阻挡层221相接触，用于连接外部驱动芯片。即，在衬底基板200的背面制备金属走线层223的同时制备金属光阻挡层221，金属光阻挡层221能够起到与现有薄膜晶体管中金属遮光层相同的作用，从而在制备薄膜晶体管的时候可以节省原有的金属遮光层的沉积和图形化步骤。\n\n[0047]作为对比，如图2B所示，现有技术中TFT阵列基板包括依次层叠设置的一衬底基板200b、一金属遮光层(Shield Metal Layer)221b、一缓冲层201b、一有源层202b、一栅极绝缘层(GI)203b、一栅极金属层(GE)204b、一介电绝缘层(ILD)205b、一第一源/漏极金属层(S/D1)206b以及一第一钝化层(VIA1)207b。采用现有技术中TFT阵列基板的驱动背板还包括：在所述第一钝化层207b上依次层叠设置的一第二源/漏极金属层(S/D2)208b、一第二钝化层(VIA2)209b、一第三源/漏极金属层(S/D3)210b、一第一透明导电层(ITO1)211b、以及一第三钝化层(VIA3)212b。也即，现有技术中，在制备薄膜晶体管的时候，需要金属遮光层的沉积和图形化步骤。\n\n[0048]请参阅图3，不同波长的光对薄膜晶体管电性的影响示意图。如图2所示，横坐标为栅极电压VGS(单位为伏特(V))，纵坐标为源/漏极电流IDS(单位为安培(A))，图中曲线用于示意波长(λ)为365nm到700nm的光对薄膜晶体管电性的影响。由图示可以看出，365nm到700nm的光对薄膜晶体管器件的电性特性具有明显的影响，而本发明TFT驱动背板，通过在制备金属走线层的同时，在衬底基板的下表面并相对于所述有源层的位置制备用于阻挡环境光的金属光阻挡层，可以提升薄膜晶体管器件对环境光的抵抗能力，从而可以在制备薄膜晶体管的时候节省原有的金属遮光层的沉积和图形化步骤，减少了制备TFT驱动背板时的工艺步骤，节约制备成本。\n\n[0049]基于同一发明构思，本发明还提供了一种Micro-LED显示器，所述Micro-LED显示器包括一TFT驱动背板，所述TFT驱动背板采用本发明上述的TFT驱动背板。本发明Micro-LED显示器采用在制备金属走线层的同时，在衬底基板的下表面并相对于所述有源层的位置制备用于阻挡环境光的金属光阻挡层，可以实现满足大尺寸Micro-LED显示需求，减少了大尺寸的Micro-LED应用中面板拼接时的边框，且在制备薄膜晶体管的时候可以节省原有的金属遮光层的沉积和图形化步骤，减少了制备TFT驱动背板时的工艺步骤，节约制备成本。\n\n[0050]以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10684, 23738, '技术领域\n\n[0001]本发明涉及一种显示器领域，尤其涉及一种背光模块及其透光率的调控方法。\n\n背景技术\n\n[0002]随着液晶面板的行业的发展，尺寸在不断变大，技术及规格要求也不断更新，电视显示面板尺寸已由32寸和55寸的市场需求变更为43寸和65寸，规格也不断升级，终端对产品的要求也不断提高。大部分现有的显示器存在色偏现象，色偏的发生主要是因为不同视角下，背光源透过液晶显示器(LCD)，在不同视角的出光量下不同导致的。\n\n[0003]过去为了改善色偏问题，利用改善偏光片(POL)与LCD的搭配，以保证POL与LCD透过光的延迟量一致；以及减小LCD延迟量以减小光的传播差异，进而保证不同视角下的透光量一致等手段。然而针对色偏问题，由于不同厂家对规格的要求益发多样性且益趋严格，现有面板技术受到挑战。\n\n[0004]据此，为更完美的避免色偏的发生，亟需一种背光模块，实现在不同视角下的透光量一致。\n\n发明内容\n\n[0005]有鉴于此，本发明提供一种新的背光模块及其透光率的调控方法，利用在液晶显示器(LCD)与背光源(BL)之间增加一层聚合物分散液晶层(PLCD)的方式，补正斜向视角与垂直视角的亮度及色度的差异。依据不同的视角，控制PDLC的聚合物的聚合方向，进而调控补正的方向，以改善斜向视角的观赏品味。\n\n[0006]据此，依据本发明的一实施例，本发明提供了一种背光模块，包括：基板；背光源，配置于所述基板上；以及聚合物分散液晶层，配置于所述背光源上方，其中，所述聚合物分散液晶层具有至少两种相异的聚合方向，以缩小斜向视角的出光量与垂直视角的出光量之间的差距。\n\n[0007]依据本发明的一实施例，本发明另提供一种背光模块透光率的调控方法，包括以下步骤：\n\n[0008]S10提供聚合物分散液晶层；\n\n[0009]S20对所述聚合物分散液晶层进行第一UV照射，使所述聚合物分散液晶层中的部分聚合物以第一方向聚合；\n\n[0010]S30对所述聚合物分散液晶层进行第二UV，使所述聚合物分散液晶层中的部分聚合物以第二方向聚合，进而使得所述聚合物分散液晶层具有至少两种相异的聚合方向，以缩小斜向视角的出光量与垂直视角的出光量之间的差距；以及\n\n[0011]S40制备一背光模块，其中所述背光模块包括：基板；背光源，配置于所述基板上；以及所述聚合物分散液晶层，配置于所述背光源上方。\n\n[0012]依据本发明的一实施例，本发明还提供一种显示器，包括上述背光模块。\n\n[0013]依据本发明的一实施例，所述显示器还包括一液晶层配置于所述背光模块上方，其中所述聚合物分散液晶层配置于所述背光源及所述液晶层之间。\n\n[0014]依据本发明的一实施例，所述聚合物分散液晶层是多层结构或单层结构。\n\n[0015]依据本发明的一实施例，所述背光模块更包括光学功能层，配置于所述聚合物分散液晶层上方，其中所述光学功能层是多层结构或单层结构，包括一增亮膜。\n\n[0016]依据本发明的一实施例，所述背光源包括单一光源、多个发光二极管、或多个微型发光二极管。\n\n附图说明\n\n[0017]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0018]图1为依据本发明一实施例的背光模块示意图。\n\n[0019]图2为依据本发明一实施例的背光模块的透光率的调控方法的流程图。\n\n[0020]图3为依据本发明一实施例的显示器示意图。\n\n具体实施方式\n\n[0021]为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式作详细说明。\n\n[0022]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[纵向]、[横向]、[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0023]为解决习知技术的问题，本发明提供一种新的背光模块及其透光率的调控方法，利用在液晶显示器(LCD)与背光源(BL)之间增加一层聚合物分散液晶层(PLCD)的方式，补正斜向视角与垂直视角的亮度及色度的差异。依据不同的视角，控制PDLC的聚合物的聚合方向，进而调控补正的方向，以改善斜向视角的观赏品味。\n\n[0024]图1为依据本发明一实施例的背光模块示意图。图2为依据本发明一实施例的背光模块的透光率的调控方法的流程图。一并参见图1及图2，具体而言，本发明提供了一种背光模块100，包括：基板10；背光源20，配置于所述基板10上；以及聚合物分散液晶层30，配置于所述背光源20上方，其中，所述聚合物分散液晶层30具有至少两种相异的聚合方向，以缩小斜向视角的出光量与垂直视角的出光量之间的差距。\n\n[0025]聚合物分散液晶层30层对垂直方向的光无影响，可使斜向的光更加均匀(图1箭头所示)，达到与垂直方向的光一致。如对特殊视角有要求，可通过调整聚合物分散液晶层302聚合物排列方向，调整聚合物分散液晶层302的液晶层方向，调整背光源20显示亮度，达到改善视角的作用。\n\n[0026]继续参见图1及图2，依据本发明的一实施例，本发明另提供一种背光模块100透光率的调控方法，包括以下步骤：\n\n[0027]S10提供聚合物分散液晶层30；\n\n[0028]S20对所述聚合物分散液晶层30进行第一UV照射，使所述聚合物分散液晶层30中的部分聚合物以第一方向聚合；\n\n[0029]S30对所述聚合物分散液晶层30进行第二UV，使所述聚合物分散液晶层30中的部分聚合物以第二方向聚合，进而使得所述聚合物分散液晶层30具有至少两种相异的聚合方向，以缩小斜向视角的出光量与垂直视角的出光量之间的差距；以及\n\n[0030]S40制备一背光模块100，其中所述背光模块100包括：基板10；背光源20，配置于所述基板10上；以及所述聚合物分散液晶层30，配置于所述背光源20上方。\n\n[0031]图3为依据本发明一实施例的显示器示意图。参见图3，具体而言，本发明还提供一种显示器1，包括上述背光模块100。\n\n[0032]如图3所示，依据本发明的一实施例，所述显示器1还包括一液晶层40配置于所述背光模块100上方，其中所述聚合物分散液晶层30配置于所述背光源20及所述液晶层40之间。\n\n[0033]依据本发明的一实施例，所述聚合物分散液晶层30是多层结构或单层结构。\n\n[0034]依据本发明的一实施例，所述背光模块100更包括光学功能层50，配置于所述聚合物分散液晶层30上方，其中所述光学功能层50是多层结构或单层结构，包括一增亮膜(图未示)。\n\n[0035]依据本发明的一实施例，所述背光源20包括单一光源、多个发光二极管、或多个微型发光二极管，如图2所示。\n\n[0036]据此，本发明提供一种新的背光模块及其透光率的调控方法，利用在液晶显示器(LCD)与背光源(BL)之间增加一层聚合物分散液晶层(PLCD)的方式，补正斜向视角与垂直视角的亮度及色度的差异。依据不同的视角，控制PDLC的聚合物的聚合方向，进而调控补正的方向，以改善斜向视角的观赏品味。\n\n[0037]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及一种显示器领域，尤其涉及一种背光模块及其透光率的调控方法。\n\n背景技术\n\n[0002]随着液晶面板的行业的发展，尺寸在不断变大，技术及规格要求也不断更新，电视显示面板尺寸已由32寸和55寸的市场需求变更为43寸和65寸，规格也不断升级，终端对产品的要求也不断提高。大部分现有的显示器存在色偏现象，色偏的发生主要是因为不同视角下，背光源透过液晶显示器(LCD)，在不同视角的出光量下不同导致的。\n\n[0003]过去为了改善色偏问题，利用改善偏光片(POL)与LCD的搭配，以保证POL与LCD透过光的延迟量一致；以及减小LCD延迟量以减小光的传播差异，进而保证不同视角下的透光量一致等手段。然而针对色偏问题，由于不同厂家对规格的要求益发多样性且益趋严格，现有面板技术受到挑战。\n\n[0004]据此，为更完美的避免色偏的发生，亟需一种背光模块，实现在不同视角下的透光量一致。\n\n发明内容\n\n[0005]有鉴于此，本发明提供一种新的背光模块及其透光率的调控方法，利用在液晶显示器(LCD)与背光源(BL)之间增加一层聚合物分散液晶层(PLCD)的方式，补正斜向视角与垂直视角的亮度及色度的差异。依据不同的视角，控制PDLC的聚合物的聚合方向，进而调控补正的方向，以改善斜向视角的观赏品味。\n\n[0006]据此，依据本发明的一实施例，本发明提供了一种背光模块，包括：基板；背光源，配置于所述基板上；以及聚合物分散液晶层，配置于所述背光源上方，其中，所述聚合物分散液晶层具有至少两种相异的聚合方向，以缩小斜向视角的出光量与垂直视角的出光量之间的差距。\n\n[0007]依据本发明的一实施例，本发明另提供一种背光模块透光率的调控方法，包括以下步骤：\n\n[0008]S10提供聚合物分散液晶层；\n\n[0009]S20对所述聚合物分散液晶层进行第一UV照射，使所述聚合物分散液晶层中的部分聚合物以第一方向聚合；\n\n[0010]S30对所述聚合物分散液晶层进行第二UV，使所述聚合物分散液晶层中的部分聚合物以第二方向聚合，进而使得所述聚合物分散液晶层具有至少两种相异的聚合方向，以缩小斜向视角的出光量与垂直视角的出光量之间的差距；以及\n\n[0011]S40制备一背光模块，其中所述背光模块包括：基板；背光源，配置于所述基板上；以及所述聚合物分散液晶层，配置于所述背光源上方。\n\n[0012]依据本发明的一实施例，本发明还提供一种显示器，包括上述背光模块。\n\n[0013]依据本发明的一实施例，所述显示器还包括一液晶层配置于所述背光模块上方，其中所述聚合物分散液晶层配置于所述背光源及所述液晶层之间。\n\n[0014]依据本发明的一实施例，所述聚合物分散液晶层是多层结构或单层结构。\n\n[0015]依据本发明的一实施例，所述背光模块更包括光学功能层，配置于所述聚合物分散液晶层上方，其中所述光学功能层是多层结构或单层结构，包括一增亮膜。\n\n[0016]依据本发明的一实施例，所述背光源包括单一光源、多个发光二极管、或多个微型发光二极管。\n\n附图说明\n\n[0017]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0018]图1为依据本发明一实施例的背光模块示意图。\n\n[0019]图2为依据本发明一实施例的背光模块的透光率的调控方法的流程图。\n\n[0020]图3为依据本发明一实施例的显示器示意图。\n\n具体实施方式\n\n[0021]为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式作详细说明。\n\n[0022]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[纵向]、[横向]、[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0023]为解决习知技术的问题，本发明提供一种新的背光模块及其透光率的调控方法，利用在液晶显示器(LCD)与背光源(BL)之间增加一层聚合物分散液晶层(PLCD)的方式，补正斜向视角与垂直视角的亮度及色度的差异。依据不同的视角，控制PDLC的聚合物的聚合方向，进而调控补正的方向，以改善斜向视角的观赏品味。\n\n[0024]图1为依据本发明一实施例的背光模块示意图。图2为依据本发明一实施例的背光模块的透光率的调控方法的流程图。一并参见图1及图2，具体而言，本发明提供了一种背光模块100，包括：基板10；背光源20，配置于所述基板10上；以及聚合物分散液晶层30，配置于所述背光源20上方，其中，所述聚合物分散液晶层30具有至少两种相异的聚合方向，以缩小斜向视角的出光量与垂直视角的出光量之间的差距。\n\n[0025]聚合物分散液晶层30层对垂直方向的光无影响，可使斜向的光更加均匀(图1箭头所示)，达到与垂直方向的光一致。如对特殊视角有要求，可通过调整聚合物分散液晶层302聚合物排列方向，调整聚合物分散液晶层302的液晶层方向，调整背光源20显示亮度，达到改善视角的作用。\n\n[0026]继续参见图1及图2，依据本发明的一实施例，本发明另提供一种背光模块100透光率的调控方法，包括以下步骤：\n\n[0027]S10提供聚合物分散液晶层30；\n\n[0028]S20对所述聚合物分散液晶层30进行第一UV照射，使所述聚合物分散液晶层30中的部分聚合物以第一方向聚合；\n\n[0029]S30对所述聚合物分散液晶层30进行第二UV，使所述聚合物分散液晶层30中的部分聚合物以第二方向聚合，进而使得所述聚合物分散液晶层30具有至少两种相异的聚合方向，以缩小斜向视角的出光量与垂直视角的出光量之间的差距；以及\n\n[0030]S40制备一背光模块100，其中所述背光模块100包括：基板10；背光源20，配置于所述基板10上；以及所述聚合物分散液晶层30，配置于所述背光源20上方。\n\n[0031]图3为依据本发明一实施例的显示器示意图。参见图3，具体而言，本发明还提供一种显示器1，包括上述背光模块100。\n\n[0032]如图3所示，依据本发明的一实施例，所述显示器1还包括一液晶层40配置于所述背光模块100上方，其中所述聚合物分散液晶层30配置于所述背光源20及所述液晶层40之间。\n\n[0033]依据本发明的一实施例，所述聚合物分散液晶层30是多层结构或单层结构。\n\n[0034]依据本发明的一实施例，所述背光模块100更包括光学功能层50，配置于所述聚合物分散液晶层30上方，其中所述光学功能层50是多层结构或单层结构，包括一增亮膜(图未示)。\n\n[0035]依据本发明的一实施例，所述背光源20包括单一光源、多个发光二极管、或多个微型发光二极管，如图2所示。\n\n[0036]据此，本发明提供一种新的背光模块及其透光率的调控方法，利用在液晶显示器(LCD)与背光源(BL)之间增加一层聚合物分散液晶层(PLCD)的方式，补正斜向视角与垂直视角的亮度及色度的差异。依据不同的视角，控制PDLC的聚合物的聚合方向，进而调控补正的方向，以改善斜向视角的观赏品味。\n\n[0037]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10685, 23739, '技术领域\n\n[0001]本申请涉及面板制造技术领域，特别涉及一种灯源组件及显示面板。\n\n背景技术\n\n[0002]随着显示技术的不断发展，微型发光二极管（Micro Lighting Emitting Diode，MicroLED）作为一种电流型发光半导体器件，因其具有自发光，光效高，能耗低等优点而被视为次世代先进显示技术。\n\n[0003]现有技术中，微型发光二极管在生产过程中，因为微型发光二极管与其他部件接触不良等问题导致微型发光二极管的发光强度均匀性较差，极大的影响了显示效果。\n\n发明内容\n\n[0004]本申请实施例提供一种灯源组件及显示面板。可以提高显示面板的显示效果。\n\n[0005]本申请实施例提供一种灯源组件，包括：\n\n[0006]基板，具有相对设置的第一面和第二面；\n\n[0007]微型发光二极管，设置在所述第一面且与所述基板电性连接；\n\n[0008]光敏探测器，位于所述第一面，所述光敏探测器用于检测所微型发光二极管的光强以得到反馈信号；\n\n[0009]微控制器，与所述基板以及所述光敏探测器电性连接，所述微控制接收所述反馈信号以通过所述基板控制所述微型发光二极管。\n\n[0010]在一些实施例中，所述灯源组件还包括盖板，所述盖板位于所述第一面且远离所述基板。\n\n[0011]在一些实施例中，所述光敏探测器固定在所述盖板上，所述光敏探测器在所述基板的正投影与所述微控制器交叠，所述灯源组件还包括连接线，所述连接线一端与所述光敏探测器连接，另一端与所述微控制器连接，所述连接线与微控制器连接的位置位于所述光敏探测器与所述微控制交叠的部分。\n\n[0012]在一些实施例中，所述灯源组件还包括反射层，所述反射层位于所述第一面，所述反射层用于将所述微型发光二极管的光反射到所述光敏探测器。\n\n[0013]在一些实施例中，所述反射层固定在所述盖板内部。\n\n[0014]在一些实施例中，所述光敏探测器固定在所述第一面，所述光敏探测器在所述盖板的正投影完全覆盖在所述反射层内。\n\n[0015]在一些实施例中，所述微型发光二极管包括芯片和显示像素，所述芯片控制所述显示像素发光，所述基板与所述芯片电性连接。\n\n[0016]在一些实施例中，所述基板包括晶体管，所述晶体管与所述芯片电性连接。\n\n[0017]在一些实施例中，所述微控制器集成在所述第一面且与所述晶体管电性连接。\n\n[0018]本申请实施例还提供一种显示面板，包括以上所述的灯源组件。\n\n[0019]本申请实施例中，通过光敏探测器实时监测微型发光二极管的光强，当光敏探测器监测到微型发光二极管的光强不足时，光敏探测器将反馈信号发送给微控制器，微控制器通过所述基板向光强不足所述微型发光二极管输入电信号，从而对光强不足的微型发光二极管进行补偿，使得显示面板的显示均匀性提高，从而提高显示面板的显示效果。\n\n附图说明\n\n[0020]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。\n\n[0021]图1为本申请实施例中显示面板的结构示意图。\n\n[0022]图2为本申请实施例中灯源组件的第一种结构示意图。\n\n[0023]图3为本申请实施例中灯源组件的第二种结构示意图。\n\n[0024]图4为本申请实施例中灯源组件的第三种结构示意图。\n\n[0025]图5为本申请实施例中灯源组件中微型发光二极管的结构示意图。\n\n[0026]图6为本申请实施例中灯源组件中基板的结构示意图。\n\n[0027]图7为本申请实施例中灯源组件的工作原理图。\n\n具体实施方式\n\n[0028]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0029]本申请实施例提供一种灯源组件及显示面板。图1为本申请实施例中显示面板100的结构示意图。其中，显示面板100包括灯源组件10和液晶模组20，液晶模组20设置在灯源组件10的上方，灯源组件10为液晶模组20提供灯源以使得液晶模组20能够显示。当然，显示面板100还可以包括其他装置。本申请实施例中液晶模组20和其他装置及其装配是本领域技术人员所熟知的相关技术，在此不做过多赘述。\n\n[0030]需要说明的是，在本申请的描述中，需要理解的是，术语上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。\n\n[0031]现有的技术中，灯源组件10中通过微型发光二极管12提供光源，微型发光二极管12在生产过程中，微型发光二极管12的芯片121主要通过切割具备特定器件结构的GaN外延片进一步通过转移至液晶模组20中基板上来实现显示。然而，由于GaN生产时的不均匀性以及转移过程的良率，导致制备的微型发光二极管12中发光强度均匀性较差，极大的影响了显示面板100的显示效果。因此，本申请实施例中提供一种灯源组件10能够使得微型发光二极管12发光强度均匀性比较好，以下对灯源组件10做详细描述。\n\n[0032]请参阅图2，图2为本申请实施例中灯源组件10的第一种结构示意图。其中，灯源组件10包括基板11、微型发光二极管12，光敏探测器13以及微控制器14，基板11具有相对设置的第一面11a和第二面11b，微型发光二极管12设置在第一面11a且与基板11电性连接，光敏探测器13位于第一面11a，光敏探测器13用于检测微型发光二极管12的光强以得到反馈信号，微控制器14与基板11以及光敏探测器13电性连接，微控制接收反馈信号以通过基板11控制微型发光二极管12。\n\n[0033]本申请实施例中，通过光敏探测器13实时监测微型发光二极管12的光强，当光敏探测器13监测到微型发光二极管12的光强不足时，光敏探测器13将反馈信号发送给微控制器14，微控制器14通过基板11向光强不足微型发光二极管12输入电信号，从而对光强不足的微型发光二极管12进行补偿，使得显示面板100的显示均匀性提高，从而提高显示面板100的显示效果。\n\n[0034]需要说明的是，第一面11a可以为基板11的上表面，第二面11b可以为基板11的下表面。当然，第二以免也可以为基板11的下表面，第二面11b可以为基板11的上表面。本申请实施例中不做特殊说明的情况下，默认为第一面11a为基板11的上表面，第二面11b为基板11的下表面。\n\n[0035]此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0036]请参阅图3，图3为本申请实施例中灯源组件10的第二种结构示意图。其中，灯源组件10还包括盖板15，盖板15位于第一面11a且远离基板11。需要说明的是，盖板15用于保护基板11、微型发光二极管12以及光敏探测器13等。盖板15远离基板11也就是盖板15与基板11具有间距，至于盖板15与基板11之间的间距为多少，本申请实施例中不做过多赘述。另外的，盖板15与基板11对应设置。\n\n[0037]其中，光敏探测器13固定在盖板15上，光敏探测器13在基板11的正投影与微控制器14交叠，灯源组件10还包括连接线16，连接线16一端与光敏探测器13连接，另一端与微控制器14连接，连接线16与微控制器14连接的位置位于光敏探测器13与微控制交叠的部分。由于光敏探测器13在基板11的正投影与微控制器14交叠。因此，连接线16一端与光敏探测器13连接、另一端与微控制器14连接时距离比较端。这样在装配灯源组件10时，能够更加方便。\n\n[0038]请参阅图4，图4为本申请实施例中灯源组件10的第三种结构示意图。其中，灯源组件10还包括反射层17，反射层17位于第一面11a，反射层17用于将微型发光二极管12的光反射到光敏探测器13。需要说明的是，反射层17可以覆盖微型发光二极管12，从而将微型发光二极管12的光全部反射到光敏探测器13内，以实现微型发光二极管12的光强检测，当某个微型发光二极管12的光强不足时，可以通过微控制器14控制基板11补偿微型发光二极管12的光强。\n\n[0039]其中，反射层17固定在盖板15内部。需要说明的是，反射层17可以集成在盖板15内，当然也可以通过其他方式固定在盖板15内部，本申请实施例中对于反射层17固定在盖板15内部的具体形式不做过多赘述。\n\n[0040]其中，光敏探测器13固定在第一面11a，光敏探测器13在盖板15的正投影完全覆盖在反射层17内。需要说明的是，盖板15内可以设置导光板，导光板在盖板15上形成导光路径，将微型发光二极管12的光导到反射层，反射层17将微型发光二极管12的光反射到光敏探测器13内，以实现对微型发光二极管12光强的实时监测。另外，因为光敏探测器13在盖板15的正投影完全覆盖在反射层17内，也就是光敏探测器13能够完全接受反射层17反射的光强，从而更好的实现对微型发光二极管12的光强监测，提高对微型发光二极管12的光强补偿。\n\n[0041]请参阅图5，图5为本申请实施例中灯源组件10中微型发光二极管12的结构示意图。其中，微型发光二极管12包括芯片121和显示像素122，芯片121控制显示像素122发光，基板11与芯片121电性连接。需要说明的是，每个显示像素122可以对应每一个芯片121，光敏探测器13在检测微型发光二极管12中没一个颗显示像素122的光强，同时基板11通过向没没一颗对应的显示像素122输入电流，从而实现对每一颗显示像素122的光强补偿，使得所有的显示像素122光强均匀以提高显示面板100的显示效果。\n\n[0042]请参阅图6，图6为本申请实施例中灯源组件10中基板11的结构示意图。其中，基板11包括晶体管111，晶体管111与芯片121电性连接。晶体管111为芯片121输入电流，向芯片121增大电流从而增大显示像素122的光强，使得所有微型发光二极管12的显示像素122光强均匀，从而提高显示面板100的显示效果。\n\n[0043]请参阅图7，图7为本申请实施例中灯源组件10的工作原理图。其中，本申请实施例灯源组件10的工作原理为：光敏探测器13实时监测微型发光二极管12的光强，当光敏探测器13监测到微型发光二极管12的光强不足时，光敏探测器13将反馈信号发送给微控制器14，微控制器14通过基板11向光强不足微型发光二极管12输入电信号，从而对光强不足的微型发光二极管12进行补偿。\n\n[0044]以上对本申请实施例提供的灯源组件10及显示面板100进行了详细介绍。本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及面板制造技术领域，特别涉及一种灯源组件及显示面板。\n\n背景技术\n\n[0002]随着显示技术的不断发展，微型发光二极管（Micro Lighting Emitting Diode，MicroLED）作为一种电流型发光半导体器件，因其具有自发光，光效高，能耗低等优点而被视为次世代先进显示技术。\n\n[0003]现有技术中，微型发光二极管在生产过程中，因为微型发光二极管与其他部件接触不良等问题导致微型发光二极管的发光强度均匀性较差，极大的影响了显示效果。\n\n发明内容\n\n[0004]本申请实施例提供一种灯源组件及显示面板。可以提高显示面板的显示效果。\n\n[0005]本申请实施例提供一种灯源组件，包括：\n\n[0006]基板，具有相对设置的第一面和第二面；\n\n[0007]微型发光二极管，设置在所述第一面且与所述基板电性连接；\n\n[0008]光敏探测器，位于所述第一面，所述光敏探测器用于检测所微型发光二极管的光强以得到反馈信号；\n\n[0009]微控制器，与所述基板以及所述光敏探测器电性连接，所述微控制接收所述反馈信号以通过所述基板控制所述微型发光二极管。\n\n[0010]在一些实施例中，所述灯源组件还包括盖板，所述盖板位于所述第一面且远离所述基板。\n\n[0011]在一些实施例中，所述光敏探测器固定在所述盖板上，所述光敏探测器在所述基板的正投影与所述微控制器交叠，所述灯源组件还包括连接线，所述连接线一端与所述光敏探测器连接，另一端与所述微控制器连接，所述连接线与微控制器连接的位置位于所述光敏探测器与所述微控制交叠的部分。\n\n[0012]在一些实施例中，所述灯源组件还包括反射层，所述反射层位于所述第一面，所述反射层用于将所述微型发光二极管的光反射到所述光敏探测器。\n\n[0013]在一些实施例中，所述反射层固定在所述盖板内部。\n\n[0014]在一些实施例中，所述光敏探测器固定在所述第一面，所述光敏探测器在所述盖板的正投影完全覆盖在所述反射层内。\n\n[0015]在一些实施例中，所述微型发光二极管包括芯片和显示像素，所述芯片控制所述显示像素发光，所述基板与所述芯片电性连接。\n\n[0016]在一些实施例中，所述基板包括晶体管，所述晶体管与所述芯片电性连接。\n\n[0017]在一些实施例中，所述微控制器集成在所述第一面且与所述晶体管电性连接。\n\n[0018]本申请实施例还提供一种显示面板，包括以上所述的灯源组件。\n\n[0019]本申请实施例中，通过光敏探测器实时监测微型发光二极管的光强，当光敏探测器监测到微型发光二极管的光强不足时，光敏探测器将反馈信号发送给微控制器，微控制器通过所述基板向光强不足所述微型发光二极管输入电信号，从而对光强不足的微型发光二极管进行补偿，使得显示面板的显示均匀性提高，从而提高显示面板的显示效果。\n\n附图说明\n\n[0020]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。\n\n[0021]图1为本申请实施例中显示面板的结构示意图。\n\n[0022]图2为本申请实施例中灯源组件的第一种结构示意图。\n\n[0023]图3为本申请实施例中灯源组件的第二种结构示意图。\n\n[0024]图4为本申请实施例中灯源组件的第三种结构示意图。\n\n[0025]图5为本申请实施例中灯源组件中微型发光二极管的结构示意图。\n\n[0026]图6为本申请实施例中灯源组件中基板的结构示意图。\n\n[0027]图7为本申请实施例中灯源组件的工作原理图。\n\n具体实施方式\n\n[0028]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0029]本申请实施例提供一种灯源组件及显示面板。图1为本申请实施例中显示面板100的结构示意图。其中，显示面板100包括灯源组件10和液晶模组20，液晶模组20设置在灯源组件10的上方，灯源组件10为液晶模组20提供灯源以使得液晶模组20能够显示。当然，显示面板100还可以包括其他装置。本申请实施例中液晶模组20和其他装置及其装配是本领域技术人员所熟知的相关技术，在此不做过多赘述。\n\n[0030]需要说明的是，在本申请的描述中，需要理解的是，术语上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。\n\n[0031]现有的技术中，灯源组件10中通过微型发光二极管12提供光源，微型发光二极管12在生产过程中，微型发光二极管12的芯片121主要通过切割具备特定器件结构的GaN外延片进一步通过转移至液晶模组20中基板上来实现显示。然而，由于GaN生产时的不均匀性以及转移过程的良率，导致制备的微型发光二极管12中发光强度均匀性较差，极大的影响了显示面板100的显示效果。因此，本申请实施例中提供一种灯源组件10能够使得微型发光二极管12发光强度均匀性比较好，以下对灯源组件10做详细描述。\n\n[0032]请参阅图2，图2为本申请实施例中灯源组件10的第一种结构示意图。其中，灯源组件10包括基板11、微型发光二极管12，光敏探测器13以及微控制器14，基板11具有相对设置的第一面11a和第二面11b，微型发光二极管12设置在第一面11a且与基板11电性连接，光敏探测器13位于第一面11a，光敏探测器13用于检测微型发光二极管12的光强以得到反馈信号，微控制器14与基板11以及光敏探测器13电性连接，微控制接收反馈信号以通过基板11控制微型发光二极管12。\n\n[0033]本申请实施例中，通过光敏探测器13实时监测微型发光二极管12的光强，当光敏探测器13监测到微型发光二极管12的光强不足时，光敏探测器13将反馈信号发送给微控制器14，微控制器14通过基板11向光强不足微型发光二极管12输入电信号，从而对光强不足的微型发光二极管12进行补偿，使得显示面板100的显示均匀性提高，从而提高显示面板100的显示效果。\n\n[0034]需要说明的是，第一面11a可以为基板11的上表面，第二面11b可以为基板11的下表面。当然，第二以免也可以为基板11的下表面，第二面11b可以为基板11的上表面。本申请实施例中不做特殊说明的情况下，默认为第一面11a为基板11的上表面，第二面11b为基板11的下表面。\n\n[0035]此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0036]请参阅图3，图3为本申请实施例中灯源组件10的第二种结构示意图。其中，灯源组件10还包括盖板15，盖板15位于第一面11a且远离基板11。需要说明的是，盖板15用于保护基板11、微型发光二极管12以及光敏探测器13等。盖板15远离基板11也就是盖板15与基板11具有间距，至于盖板15与基板11之间的间距为多少，本申请实施例中不做过多赘述。另外的，盖板15与基板11对应设置。\n\n[0037]其中，光敏探测器13固定在盖板15上，光敏探测器13在基板11的正投影与微控制器14交叠，灯源组件10还包括连接线16，连接线16一端与光敏探测器13连接，另一端与微控制器14连接，连接线16与微控制器14连接的位置位于光敏探测器13与微控制交叠的部分。由于光敏探测器13在基板11的正投影与微控制器14交叠。因此，连接线16一端与光敏探测器13连接、另一端与微控制器14连接时距离比较端。这样在装配灯源组件10时，能够更加方便。\n\n[0038]请参阅图4，图4为本申请实施例中灯源组件10的第三种结构示意图。其中，灯源组件10还包括反射层17，反射层17位于第一面11a，反射层17用于将微型发光二极管12的光反射到光敏探测器13。需要说明的是，反射层17可以覆盖微型发光二极管12，从而将微型发光二极管12的光全部反射到光敏探测器13内，以实现微型发光二极管12的光强检测，当某个微型发光二极管12的光强不足时，可以通过微控制器14控制基板11补偿微型发光二极管12的光强。\n\n[0039]其中，反射层17固定在盖板15内部。需要说明的是，反射层17可以集成在盖板15内，当然也可以通过其他方式固定在盖板15内部，本申请实施例中对于反射层17固定在盖板15内部的具体形式不做过多赘述。\n\n[0040]其中，光敏探测器13固定在第一面11a，光敏探测器13在盖板15的正投影完全覆盖在反射层17内。需要说明的是，盖板15内可以设置导光板，导光板在盖板15上形成导光路径，将微型发光二极管12的光导到反射层，反射层17将微型发光二极管12的光反射到光敏探测器13内，以实现对微型发光二极管12光强的实时监测。另外，因为光敏探测器13在盖板15的正投影完全覆盖在反射层17内，也就是光敏探测器13能够完全接受反射层17反射的光强，从而更好的实现对微型发光二极管12的光强监测，提高对微型发光二极管12的光强补偿。\n\n[0041]请参阅图5，图5为本申请实施例中灯源组件10中微型发光二极管12的结构示意图。其中，微型发光二极管12包括芯片121和显示像素122，芯片121控制显示像素122发光，基板11与芯片121电性连接。需要说明的是，每个显示像素122可以对应每一个芯片121，光敏探测器13在检测微型发光二极管12中没一个颗显示像素122的光强，同时基板11通过向没没一颗对应的显示像素122输入电流，从而实现对每一颗显示像素122的光强补偿，使得所有的显示像素122光强均匀以提高显示面板100的显示效果。\n\n[0042]请参阅图6，图6为本申请实施例中灯源组件10中基板11的结构示意图。其中，基板11包括晶体管111，晶体管111与芯片121电性连接。晶体管111为芯片121输入电流，向芯片121增大电流从而增大显示像素122的光强，使得所有微型发光二极管12的显示像素122光强均匀，从而提高显示面板100的显示效果。\n\n[0043]请参阅图7，图7为本申请实施例中灯源组件10的工作原理图。其中，本申请实施例灯源组件10的工作原理为：光敏探测器13实时监测微型发光二极管12的光强，当光敏探测器13监测到微型发光二极管12的光强不足时，光敏探测器13将反馈信号发送给微控制器14，微控制器14通过基板11向光强不足微型发光二极管12输入电信号，从而对光强不足的微型发光二极管12进行补偿。\n\n[0044]以上对本申请实施例提供的灯源组件10及显示面板100进行了详细介绍。本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10686, 23740, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种用于Micro-LED显示的TFT驱动背板及Micro-LED显示器。\n\n背景技术\n\n[0002]Micro-LED技术，即LED微缩化和矩阵化技术，是指在一个芯片上集成的高密度微小尺寸的LED阵列，如LED显示屏每一个像素可定址、单独驱动点亮，将像素点距离从毫米级降低至微米级。Micro-LED的一个重要应用领域是超大尺寸的显示。\n\n[0003]目前，Micro-LED所用的驱动背板为顶栅低温多晶硅薄膜晶体管(Top Gate LTPSTFT)。目前低温多晶体硅薄膜晶体管(LTPS)仅能在6代线(玻璃尺寸1.5米×1.85米)进行生产，母板玻璃尺寸较小，在针对超大尺寸的应用方面产能容易遇到瓶颈。而氧化物薄膜晶体管技术能够在大世代线进行生产(11代线，3.37米×2.94米)。因此，氧化物薄膜晶体管技术在大尺寸Micro-LED的应用方面有优势。但是，Micro-LED显示(display)对驱动背板的中薄膜晶体管的迁移率要求较高，需要场效应迁移率大于30cm2/Vs。目前，以IGZO(IndiumGallium Zinc Oxide，铟镓锌氧化物)为主的氧化物薄膜晶体管迁移率一般为10cm2/Vs，难以满足的Micro-LED显示的要求。\n\n[0004]另外，在大尺寸的Micro-LED应用中多采用拼接技术。常规面板的边缘区域为走线和与驱动芯片连接的区域，通常为3-50mm。因此在拼接时的边框会形成黑线，影响显示效果。\n\n[0005]因此，如何解决现有氧化物半导体材料迁移率较低，难以满足Micro-LED显示需求的问题。以及如何减少拼接时的边框并减少制备薄膜晶体管驱动背板时的工艺步骤，是目前面向Micro-LED显示应用技术发展急需解决的技术问题。\n\n发明内容\n\n[0006]本发明的目的在于，针对现有技术存在的问题，提供一种TFT驱动背板及Micro-LED显示器，可以实现满足大尺寸Micro-LED显示需求，能够解决现有氧化物半导体材料迁移率较低，难以满足Micro-LED显示需求的问题，且可以减少拼接时的边框并减少制备薄膜晶体管驱动背板时的工艺步骤。\n\n[0007]为实现上述目的，本发明提供了一种TFT驱动背板，所述TFT驱动背板包括一衬底基板；所述衬底基板的上方设有一有源层，所述有源层采用迁移率大于或等于30cm2/Vs的氧化物半导体材料制备；所述衬底基板的下方设有一背面金属层，所述背面金属层包括一金属光阻挡层，所述金属光阻挡层相对于所述有源层设置。\n\n[0008]为实现上述目的，本发明还提供了一种Micro-LED显示器，所述Micro-LED显示器包括本发明所述的TFT驱动背板。\n\n[0009]本发明的优点在于：本发明通过采用高迁移率氧化物薄膜晶体管驱动背板结构，可以实现满足大尺寸Micro-LED显示需求；采用在衬底基板的下方制备背面金属层，背面金属层包括用于连接驱动芯片的金属走线层，以及用于阻挡环境光的金属光阻挡层，减少了大尺寸的Micro-LED应用中面板拼接时的边框，且在制备薄膜晶体管的时候可以节省原有的金属遮光层的沉积和图形化步骤，减少了制备TFT驱动背板时的工艺步骤，节约制备成本。\n\n附图说明\n\n[0010]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。\n\n[0011]图1，本发明TFT驱动背板第一实施例的层状结构示意图；\n\n[0012]图2，氧化物薄膜晶体管IV曲线；\n\n[0013]图3，本发明TFT驱动背板第二实施例的层状结构示意图。\n\n具体实施方式\n\n[0014]下面详细描述本发明的实施方式，所述实施方式的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的组件或具有相同或类似功能的组件。本发明所提到的方向用语，例如：上、下、左、右、前、后、内、外、侧面等，仅是参考附图的方向。以下通过参考附图描述的实施方式及使用的方向用语是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其它工艺的应用和/或其它材料的使用。\n\n[0015]本发明提出了一种新型的适用于大尺寸Micro-LED应用的TFT驱动背板，所述TFT驱动背板包括一衬底基板；所述衬底基板的上方设有一有源层，所述有源层采用迁移率大于或等于30cm2/Vs的氧化物半导体材料制备；所述衬底基板的下方制备有一背面金属层，所述背面金属层包括一金属光阻挡层(Metal Light Shield Layer)，所述金属光阻挡层相对于所述有源层设置。\n\n[0016]采用本发明TFT驱动背板，可以实现满足大尺寸Micro-LED显示需求的高迁移率氧化物薄膜晶体管驱动背板结构，能够解决现有氧化物半导体材料迁移率较低，难以满足Micro-LED显示需求的问题。同时，在驱动背板的背面相对于薄膜晶体管的有源层区域，采用具有遮光性的金属制备金属光阻挡层，用于阻挡环境光。金属光阻挡层能够起到与现有薄膜晶体管中金属遮光层(Shield Metal Layer)相同的作用，因此本发明驱动背板的薄膜晶体管中不再需要金属遮光层。从而，本发明在制备薄膜晶体管的时候可以节省原有的金属遮光层的沉积和图形化步骤，进而减少制备TFT驱动背板时的工艺步骤，节约制备成本。\n\n[0017]优选地，所述背面金属层还包括用于连接驱动芯片的一金属走线层，从而可以将驱动芯片放置在驱动背板的背面，以压缩面板边框。也即，为了减少大尺寸的Micro-LED应用中面板拼接时的边框，本发明TFT驱动背板通过在侧面和背后制备金属走线层，从而可以将驱动芯片放置在驱动背板的背面，进而可以减少拼接时的边框，节约制备成本。\n\n[0018]请参阅图1-2，其中，图1为本发明TFT驱动背板第一实施例的层状结构示意图，图2为氧化物薄膜晶体管IV曲线。\n\n[0019]如图1所示，本发明TFT驱动背板包括：一衬底基板101，设于所述衬底基板101上的一有源层(Act)102，设于所述有源层102上的一栅极绝缘层(GI)103，设于所述栅极绝缘层103上的一栅极(GE)104，设于所述栅极104上并覆盖所述栅极104、所述栅极绝缘层103、所述有源层102及所述衬底基板101的一介电绝缘层(ILD)105，设于所述介电绝缘层105上的一第一源/漏极金属层(S/D1)106，设于所述第一源/漏极金属层106上并覆盖所述第一源/漏极金属层106及所述介电绝缘层105的一第一钝化层(VIA1)107，设于所述第一钝化层107上的一第二源/漏极金属层(S/D2)108，设于所述第二源/漏极金属层108上并覆盖所述第二源/漏极金属层108的一第二钝化层(VIA2)109，设于所述第二钝化层109上的一第三源/漏极金属层(S/D3)111，以及设于所述第三源/漏极金属层111上的一第一透明导电层(ITO1)112。本实施例中，所述第二钝化层109上设有一第三钝化层(VIA3)113，通过对所述第三钝化层113蚀刻，以暴露出所述第三源/漏极金属层111的制备区域。\n\n[0020]在本实施例中，所述有源层102包括对应于所述栅极104的沟道区1022，及位于所述沟道区1022两侧的源/漏极接触区1021；所述第一源/漏极金属层106包括源/漏极1061，所述源/漏极接触区1021与所述源/漏极1061之间设有第一通孔1051，所述源/漏极1061通过所述第一通孔1051与所述源/漏极接触区1021相接触。所述第二源/漏极金属层108包括电极连接线1081及第一驱动电源线1082，所述电极连接线1081及所述第一驱动电源线1082与所述源/漏极1061之间分别设有第二通孔1071，所述源/漏极161分别通过相应的第二通孔1071与所述电极连接线1081及所述第一驱动电源线1082相连接。所述有源层102、所述栅极1041、所述源/漏极1081构成所述TFT驱动背板的薄膜晶体管。所述第三源/漏极金属层111包括图案化的阳极(Anode)1110及第二驱动电源线1111；所述阳极1110与所述电极连接线1081之间设有第三通孔1091，所述阳极1110通过所述第三通孔1091与所述电极连接线1081相连接。本实施例中，所述第一驱动电源线1082用于提供电压驱动信号(VDD)，所述第二驱动电源线1111用于提供电源开关信号(VSS)。所述第一透明导电层112作为像素电极。\n\n[0021]在本实施例中，所述TFT驱动背板采用三层源/漏金属层。需要说明的是，采用单层源/漏金属层或两层及以上的多层源/漏金属层都是可以采用改进后的本发明所述TFT驱动背板的结构，即有源层采用迁移率大于或等于30cm2/Vs的氧化物半导体材料制备，在背板背面相对于有源层位置设置一层金属光阻挡层。\n\n[0022]具体的，所述衬底基板101可以玻璃基板或采用高分子聚合物制备的柔性基板，高分子聚合物可以为聚酰亚胺(PI)。\n\n[0023]具体的，所述有源层102采用迁移率大于或等于30cm2/Vs的氧化物半导体材料，并采用磁控溅射的方式制备。所述氧化物半导体材料可以为含铟(In)和锡(Sn)，且迁移率大于或等于30cm2/Vs的氧化物半导体材料；所述氧化物半导体材料也可以为含镓(Ga)和锡(Sn)，且迁移率大于或等于30cm2/Vs的氧化物半导体材料；所述氧化物半导体材料也可以为含铟(In)、氟(F)和氧(O)，且迁移率大于或等于30cm2/Vs的氧化物半导体材料。如图2所示，横坐标为栅极电压VG(单位为伏特(V))，纵坐标为源/漏极电流IDS(单位为安培(A))，图中两曲线分别用于示意不同迁移率μFE(单位为厘米2/(伏·秒)，即cm2/V s)。迁移率越高，薄膜晶体管器件的运行速度越快，截止频率就越高。因此，本发明通过采用迁移率大于或等于30cm2/Vs的氧化物半导体材料制备有源层，使得本发明TFT驱动背板可以面向Micro-LED显示应用，满足大尺寸Micro-LED显示需求。\n\n[0024]具体的，所述第一钝化层(VIA1)107、第二钝化层(VIA2)109、第三钝化层(VIA3)113可以采用相同材料制成。\n\n[0025]在本实施例中，所述衬底基板101的下方制备有一背面金属层，所述背面金属层包括：相对于所述有源层102的沟道区1022设置的一金属光阻挡层(Metal Light ShieldLayer)121，设于所述金属光阻挡层121下方并覆盖所述金属光阻挡层121及所述衬底基板101背面的一背面绝缘层122，设于所述背面绝缘层122下方的一金属走线层123。即，在制备背面金属走线层的同时在背面制备金属遮光结构，从而在制备薄膜晶体管的时候可以节省原有的金属遮光层的沉积和图形化步骤。其中，对所述背面绝缘层122进行蚀刻，形成暴露出部分所述金属光阻挡层121的通孔，所述金属走线层123通过该通孔与所述金属光阻挡层121相接触。\n\n[0026]具体的，所述金属光阻挡层121的材料为具有光阻挡作用的金属，例如IZO、CuCa叠加构成的复合层，也可以为其它具有光阻挡作用的金属材料。优选的，所述金属光阻挡层121的长度和宽度均大于所述有源层102的沟道区1022的长度和宽度；且所述有源层102的沟道区1022与所述金属光阻挡层121两者中心对齐，从而有效阻挡环境光，以对所述有源层102进行遮光保护。\n\n[0027]具体的，所述背面绝缘层122可以为氧化硅(SiOx)层，或氮化硅(SiNx)层，或氮氧化硅(SiOxNy)层。\n\n[0028]具体的，所述金属走线层123的金属走线用于连接驱动芯片，从而可以将驱动芯片放置在驱动背板的背面，以压缩面板边框。优选地，所述金属走线层123采用透明导电材料(ITO)制成。\n\n[0029]本发明TFT驱动背板，采用高迁移率氧化物薄膜晶体管驱动背板结构，可以实现满足大尺寸Micro-LED显示需求；采用在衬底基板的下方制备背面金属层，背面金属层包括用于连接驱动芯片的金属走线层，以及用于阻挡环境光的金属光阻挡层，减少了大尺寸的Micro-LED应用中面板拼接时的边框，且在制备薄膜晶体管的时候可以节省原有的金属遮光层的沉积和图形化步骤，减少了制备TFT驱动背板时的工艺步骤，节约制备成本。\n\n[0030]请参阅图3，本发明TFT驱动背板第二实施例的层状结构示意图。与图1所示实施例的不同之处在于，在本实施例中，所述衬底基板101与所述有源层102之间还设有一缓冲层(Buffer)301。具体的，所述缓冲层301可以为氧化硅(SiOx)层或氮化硅(SiNx)层，或者由氧化硅层与氮化硅层叠加构成的复合层。\n\n[0031]基于同一发明构思，本发明还提供了一种Micro-LED显示器，所述Micro-LED显示器包括一TFT驱动背板，所述TFT驱动背板采用本发明上述的TFT驱动背板。本发明Micro-LED显示器采用高迁移率氧化物薄膜晶体管驱动背板结构，可以实现满足大尺寸Micro-LED显示需求；采用在衬底基板的下方制备背面金属层，背面金属层包括用于连接驱动芯片的金属走线层，以及用于阻挡环境光的金属光阻挡层，减少了大尺寸的Micro-LED应用中面板拼接时的边框，且在制备薄膜晶体管的时候可以节省原有的金属遮光层的沉积和图形化步骤，减少了制备TFT驱动背板时的工艺步骤，节约制备成本。\n\n[0032]以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种用于Micro-LED显示的TFT驱动背板及Micro-LED显示器。\n\n背景技术\n\n[0002]Micro-LED技术，即LED微缩化和矩阵化技术，是指在一个芯片上集成的高密度微小尺寸的LED阵列，如LED显示屏每一个像素可定址、单独驱动点亮，将像素点距离从毫米级降低至微米级。Micro-LED的一个重要应用领域是超大尺寸的显示。\n\n[0003]目前，Micro-LED所用的驱动背板为顶栅低温多晶硅薄膜晶体管(Top Gate LTPSTFT)。目前低温多晶体硅薄膜晶体管(LTPS)仅能在6代线(玻璃尺寸1.5米×1.85米)进行生产，母板玻璃尺寸较小，在针对超大尺寸的应用方面产能容易遇到瓶颈。而氧化物薄膜晶体管技术能够在大世代线进行生产(11代线，3.37米×2.94米)。因此，氧化物薄膜晶体管技术在大尺寸Micro-LED的应用方面有优势。但是，Micro-LED显示(display)对驱动背板的中薄膜晶体管的迁移率要求较高，需要场效应迁移率大于30cm2/Vs。目前，以IGZO(IndiumGallium Zinc Oxide，铟镓锌氧化物)为主的氧化物薄膜晶体管迁移率一般为10cm2/Vs，难以满足的Micro-LED显示的要求。\n\n[0004]另外，在大尺寸的Micro-LED应用中多采用拼接技术。常规面板的边缘区域为走线和与驱动芯片连接的区域，通常为3-50mm。因此在拼接时的边框会形成黑线，影响显示效果。\n\n[0005]因此，如何解决现有氧化物半导体材料迁移率较低，难以满足Micro-LED显示需求的问题。以及如何减少拼接时的边框并减少制备薄膜晶体管驱动背板时的工艺步骤，是目前面向Micro-LED显示应用技术发展急需解决的技术问题。\n\n发明内容\n\n[0006]本发明的目的在于，针对现有技术存在的问题，提供一种TFT驱动背板及Micro-LED显示器，可以实现满足大尺寸Micro-LED显示需求，能够解决现有氧化物半导体材料迁移率较低，难以满足Micro-LED显示需求的问题，且可以减少拼接时的边框并减少制备薄膜晶体管驱动背板时的工艺步骤。\n\n[0007]为实现上述目的，本发明提供了一种TFT驱动背板，所述TFT驱动背板包括一衬底基板；所述衬底基板的上方设有一有源层，所述有源层采用迁移率大于或等于30cm2/Vs的氧化物半导体材料制备；所述衬底基板的下方设有一背面金属层，所述背面金属层包括一金属光阻挡层，所述金属光阻挡层相对于所述有源层设置。\n\n[0008]为实现上述目的，本发明还提供了一种Micro-LED显示器，所述Micro-LED显示器包括本发明所述的TFT驱动背板。\n\n[0009]本发明的优点在于：本发明通过采用高迁移率氧化物薄膜晶体管驱动背板结构，可以实现满足大尺寸Micro-LED显示需求；采用在衬底基板的下方制备背面金属层，背面金属层包括用于连接驱动芯片的金属走线层，以及用于阻挡环境光的金属光阻挡层，减少了大尺寸的Micro-LED应用中面板拼接时的边框，且在制备薄膜晶体管的时候可以节省原有的金属遮光层的沉积和图形化步骤，减少了制备TFT驱动背板时的工艺步骤，节约制备成本。\n\n附图说明\n\n[0010]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。\n\n[0011]图1，本发明TFT驱动背板第一实施例的层状结构示意图；\n\n[0012]图2，氧化物薄膜晶体管IV曲线；\n\n[0013]图3，本发明TFT驱动背板第二实施例的层状结构示意图。\n\n具体实施方式\n\n[0014]下面详细描述本发明的实施方式，所述实施方式的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的组件或具有相同或类似功能的组件。本发明所提到的方向用语，例如：上、下、左、右、前、后、内、外、侧面等，仅是参考附图的方向。以下通过参考附图描述的实施方式及使用的方向用语是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其它工艺的应用和/或其它材料的使用。\n\n[0015]本发明提出了一种新型的适用于大尺寸Micro-LED应用的TFT驱动背板，所述TFT驱动背板包括一衬底基板；所述衬底基板的上方设有一有源层，所述有源层采用迁移率大于或等于30cm2/Vs的氧化物半导体材料制备；所述衬底基板的下方制备有一背面金属层，所述背面金属层包括一金属光阻挡层(Metal Light Shield Layer)，所述金属光阻挡层相对于所述有源层设置。\n\n[0016]采用本发明TFT驱动背板，可以实现满足大尺寸Micro-LED显示需求的高迁移率氧化物薄膜晶体管驱动背板结构，能够解决现有氧化物半导体材料迁移率较低，难以满足Micro-LED显示需求的问题。同时，在驱动背板的背面相对于薄膜晶体管的有源层区域，采用具有遮光性的金属制备金属光阻挡层，用于阻挡环境光。金属光阻挡层能够起到与现有薄膜晶体管中金属遮光层(Shield Metal Layer)相同的作用，因此本发明驱动背板的薄膜晶体管中不再需要金属遮光层。从而，本发明在制备薄膜晶体管的时候可以节省原有的金属遮光层的沉积和图形化步骤，进而减少制备TFT驱动背板时的工艺步骤，节约制备成本。\n\n[0017]优选地，所述背面金属层还包括用于连接驱动芯片的一金属走线层，从而可以将驱动芯片放置在驱动背板的背面，以压缩面板边框。也即，为了减少大尺寸的Micro-LED应用中面板拼接时的边框，本发明TFT驱动背板通过在侧面和背后制备金属走线层，从而可以将驱动芯片放置在驱动背板的背面，进而可以减少拼接时的边框，节约制备成本。\n\n[0018]请参阅图1-2，其中，图1为本发明TFT驱动背板第一实施例的层状结构示意图，图2为氧化物薄膜晶体管IV曲线。\n\n[0019]如图1所示，本发明TFT驱动背板包括：一衬底基板101，设于所述衬底基板101上的一有源层(Act)102，设于所述有源层102上的一栅极绝缘层(GI)103，设于所述栅极绝缘层103上的一栅极(GE)104，设于所述栅极104上并覆盖所述栅极104、所述栅极绝缘层103、所述有源层102及所述衬底基板101的一介电绝缘层(ILD)105，设于所述介电绝缘层105上的一第一源/漏极金属层(S/D1)106，设于所述第一源/漏极金属层106上并覆盖所述第一源/漏极金属层106及所述介电绝缘层105的一第一钝化层(VIA1)107，设于所述第一钝化层107上的一第二源/漏极金属层(S/D2)108，设于所述第二源/漏极金属层108上并覆盖所述第二源/漏极金属层108的一第二钝化层(VIA2)109，设于所述第二钝化层109上的一第三源/漏极金属层(S/D3)111，以及设于所述第三源/漏极金属层111上的一第一透明导电层(ITO1)112。本实施例中，所述第二钝化层109上设有一第三钝化层(VIA3)113，通过对所述第三钝化层113蚀刻，以暴露出所述第三源/漏极金属层111的制备区域。\n\n[0020]在本实施例中，所述有源层102包括对应于所述栅极104的沟道区1022，及位于所述沟道区1022两侧的源/漏极接触区1021；所述第一源/漏极金属层106包括源/漏极1061，所述源/漏极接触区1021与所述源/漏极1061之间设有第一通孔1051，所述源/漏极1061通过所述第一通孔1051与所述源/漏极接触区1021相接触。所述第二源/漏极金属层108包括电极连接线1081及第一驱动电源线1082，所述电极连接线1081及所述第一驱动电源线1082与所述源/漏极1061之间分别设有第二通孔1071，所述源/漏极161分别通过相应的第二通孔1071与所述电极连接线1081及所述第一驱动电源线1082相连接。所述有源层102、所述栅极1041、所述源/漏极1081构成所述TFT驱动背板的薄膜晶体管。所述第三源/漏极金属层111包括图案化的阳极(Anode)1110及第二驱动电源线1111；所述阳极1110与所述电极连接线1081之间设有第三通孔1091，所述阳极1110通过所述第三通孔1091与所述电极连接线1081相连接。本实施例中，所述第一驱动电源线1082用于提供电压驱动信号(VDD)，所述第二驱动电源线1111用于提供电源开关信号(VSS)。所述第一透明导电层112作为像素电极。\n\n[0021]在本实施例中，所述TFT驱动背板采用三层源/漏金属层。需要说明的是，采用单层源/漏金属层或两层及以上的多层源/漏金属层都是可以采用改进后的本发明所述TFT驱动背板的结构，即有源层采用迁移率大于或等于30cm2/Vs的氧化物半导体材料制备，在背板背面相对于有源层位置设置一层金属光阻挡层。\n\n[0022]具体的，所述衬底基板101可以玻璃基板或采用高分子聚合物制备的柔性基板，高分子聚合物可以为聚酰亚胺(PI)。\n\n[0023]具体的，所述有源层102采用迁移率大于或等于30cm2/Vs的氧化物半导体材料，并采用磁控溅射的方式制备。所述氧化物半导体材料可以为含铟(In)和锡(Sn)，且迁移率大于或等于30cm2/Vs的氧化物半导体材料；所述氧化物半导体材料也可以为含镓(Ga)和锡(Sn)，且迁移率大于或等于30cm2/Vs的氧化物半导体材料；所述氧化物半导体材料也可以为含铟(In)、氟(F)和氧(O)，且迁移率大于或等于30cm2/Vs的氧化物半导体材料。如图2所示，横坐标为栅极电压VG(单位为伏特(V))，纵坐标为源/漏极电流IDS(单位为安培(A))，图中两曲线分别用于示意不同迁移率μFE(单位为厘米2/(伏·秒)，即cm2/V s)。迁移率越高，薄膜晶体管器件的运行速度越快，截止频率就越高。因此，本发明通过采用迁移率大于或等于30cm2/Vs的氧化物半导体材料制备有源层，使得本发明TFT驱动背板可以面向Micro-LED显示应用，满足大尺寸Micro-LED显示需求。\n\n[0024]具体的，所述第一钝化层(VIA1)107、第二钝化层(VIA2)109、第三钝化层(VIA3)113可以采用相同材料制成。\n\n[0025]在本实施例中，所述衬底基板101的下方制备有一背面金属层，所述背面金属层包括：相对于所述有源层102的沟道区1022设置的一金属光阻挡层(Metal Light ShieldLayer)121，设于所述金属光阻挡层121下方并覆盖所述金属光阻挡层121及所述衬底基板101背面的一背面绝缘层122，设于所述背面绝缘层122下方的一金属走线层123。即，在制备背面金属走线层的同时在背面制备金属遮光结构，从而在制备薄膜晶体管的时候可以节省原有的金属遮光层的沉积和图形化步骤。其中，对所述背面绝缘层122进行蚀刻，形成暴露出部分所述金属光阻挡层121的通孔，所述金属走线层123通过该通孔与所述金属光阻挡层121相接触。\n\n[0026]具体的，所述金属光阻挡层121的材料为具有光阻挡作用的金属，例如IZO、CuCa叠加构成的复合层，也可以为其它具有光阻挡作用的金属材料。优选的，所述金属光阻挡层121的长度和宽度均大于所述有源层102的沟道区1022的长度和宽度；且所述有源层102的沟道区1022与所述金属光阻挡层121两者中心对齐，从而有效阻挡环境光，以对所述有源层102进行遮光保护。\n\n[0027]具体的，所述背面绝缘层122可以为氧化硅(SiOx)层，或氮化硅(SiNx)层，或氮氧化硅(SiOxNy)层。\n\n[0028]具体的，所述金属走线层123的金属走线用于连接驱动芯片，从而可以将驱动芯片放置在驱动背板的背面，以压缩面板边框。优选地，所述金属走线层123采用透明导电材料(ITO)制成。\n\n[0029]本发明TFT驱动背板，采用高迁移率氧化物薄膜晶体管驱动背板结构，可以实现满足大尺寸Micro-LED显示需求；采用在衬底基板的下方制备背面金属层，背面金属层包括用于连接驱动芯片的金属走线层，以及用于阻挡环境光的金属光阻挡层，减少了大尺寸的Micro-LED应用中面板拼接时的边框，且在制备薄膜晶体管的时候可以节省原有的金属遮光层的沉积和图形化步骤，减少了制备TFT驱动背板时的工艺步骤，节约制备成本。\n\n[0030]请参阅图3，本发明TFT驱动背板第二实施例的层状结构示意图。与图1所示实施例的不同之处在于，在本实施例中，所述衬底基板101与所述有源层102之间还设有一缓冲层(Buffer)301。具体的，所述缓冲层301可以为氧化硅(SiOx)层或氮化硅(SiNx)层，或者由氧化硅层与氮化硅层叠加构成的复合层。\n\n[0031]基于同一发明构思，本发明还提供了一种Micro-LED显示器，所述Micro-LED显示器包括一TFT驱动背板，所述TFT驱动背板采用本发明上述的TFT驱动背板。本发明Micro-LED显示器采用高迁移率氧化物薄膜晶体管驱动背板结构，可以实现满足大尺寸Micro-LED显示需求；采用在衬底基板的下方制备背面金属层，背面金属层包括用于连接驱动芯片的金属走线层，以及用于阻挡环境光的金属光阻挡层，减少了大尺寸的Micro-LED应用中面板拼接时的边框，且在制备薄膜晶体管的时候可以节省原有的金属遮光层的沉积和图形化步骤，减少了制备TFT驱动背板时的工艺步骤，节约制备成本。\n\n[0032]以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10687, 23741, '技术领域\n\n[0001]本发明涉及平面显示技术领域，尤其是，其中的一种显示面板模组，其提供了一种屏下摄像解决方案。\n\n背景技术\n\n[0002]已知，随着LTPS小尺寸显示技术的不断发展推进，全面屏技术已成为手机市场的主流技术。\n\n[0003]但就目前而言，市场上推广的“全面屏”还处于一个伪全面屏的阶段，也就是说，其只是具有较高的屏占比，但还不是真正意义上的“全面屏”。对此，业界以全面屏为目标衍生出来的“notch型”全面屏、“美人尖型”全面屏及“盲孔型”全面屏等等技术层出不穷，其不断提升的屏占比也是不断将全面屏技术推向极致。\n\n[0004]然而，以上提及的这三种全面屏技术依然是需要将显示屏的部分区域进行挖孔或异形化处理，以将摄像头的位置区域露出，以便使外界光线进入供拍照使用，因此，这也就是这三种技术方案无法做到真正的全面屏显示方案的一个主要原因。\n\n[0005]为此，人们也试图通过让摄像头区域显示来进一步提升屏占比，但如何将摄像头拍照和其所在区域能够正常显示两者实现完美结合，目前业界还没有好的解决方案。\n\n发明内容\n\n[0006]本发明的一个方面是提供一种显示面板模组，其采用新型的面板结构、背光组件结构来结合其下方设置的摄像头单元，从而提供了一种新型的屏下摄像解决方案。\n\n[0007]本发明采用的技术方案如下：\n\n[0008]一种显示面板模组，包括显示面板，其定义有摄像头区域。所述显示面板下设置有背光组件(BLU)，背光组件下设置有一摄像头。其中所述背光组件包括电路背板和间隔设置在其上的光源单元。其中所述背光组件中的所述电路背板在对应所述摄像头区域的位置处，向下倾斜凹陷形成一个上大下小两端开口的中空漏斗形状；其中定义所述中空漏斗形状临近所述显示面板的上开口为第一开孔，临近所述摄像头的下开口为第二开孔。其中从所述显示面板外部入射的光线能够通过所述第一开孔和第二开孔进入到所述摄像头内以供其拍摄使用。\n\n[0009]进一步的，在不同实施方式中，其中所述第二开孔的孔径等于或是小于所述摄像头的孔径。\n\n[0010]进一步的，在不同实施方式中，其中所述第二开孔的孔径小于所述摄像头的孔径0～4mm。\n\n[0011]进一步的，在不同实施方式中，其中所述电路背板的中空漏斗形状的倾斜角度θ在30～70℃范围内。也就是说，其中所述中空漏斗形状的剖面为一个等腰倒梯形，其腰部的倾角范围在30～70℃。具体可以是35℃、45℃、50℃、60℃、65℃等等，可随实际需要而定并无限定。\n\n[0012]进一步的，在不同实施方式中，其中所述电路背板的中空漏斗形状的垂直深度在50～600μm。\n\n[0013]进一步的，在不同实施方式中，其中所述中空漏斗形状的倾斜内侧壁上间隔倾斜依次排列设置有1～10排所述光源单元，其中所述每排光源单元成环形排列设置。其中所述光源单元具体可以采用mini-LED型光源单元，但不限于。\n\n[0014]进一步的，在不同实施方式中，其中所述光源单元的发光角度范围为130～170度。优选为160度左右，但不限于。\n\n[0015]进一步的，在不同实施方式中，其中设置在所述中空漏斗形状倾斜内侧壁上的所述光源单元为每排光源单元单独控制。\n\n[0016]进一步的，在不同实施方式中，其中设置在所述中空漏斗形状倾斜内侧壁上的所述光源单元为每颗光源单元单独控制。\n\n[0017]进一步的，在不同实施方式中，其中设置在所述中空漏斗形状倾斜内侧壁上的不同排的所述光源单元的驱动电压是不相同的。\n\n[0018]进一步的，在不同实施方式中，其中对应所述摄像头区域设置的所述光源单元为依次轮换间隔排布的RGB三色mini-LED光源单元。\n\n[0019]进一步的，在不同实施方式中，其中所述显示面板包括阵列基板、液晶盒和CF基板。其中所述液晶盒可以是PDLC或是PNLC中的一种，但不限于。\n\n[0020]进一步的，在不同实施方式中，其中所述CF基板包括依次设置的基板玻璃、光阻层和平坦层(OC层)；其中在所述摄像头区域的所述光阻层包括间隔设置的BM层单元，所述BM层单元之间设置透明光阻层单元，或者是所述平坦层直接向下填充所述BM层单元之间的位置。\n\n[0021]相对于现有技术，本发明的有益效果是：本发明涉及的一种显示面板模组，其采用新型的面板结构、背光组件结构来结合其下方设置的摄像头单元，从而提供了一种新型的屏下摄像解决方案。\n\n[0022]进一步的，其中所述背光组件在摄像头区域采用中空漏斗形状，使得外界光线能够直接通过其进入到下方的摄像头中，以供下方的所述摄像头进行正常的拍摄。而为了进一步的保证所述摄像头更好的拍摄质量，所述显示面板的CF基板在所述摄像头区域采用了新型的光阻层结构，相对于通常的BM层单元之间设置三色的色阻层单元而言，本案则是改用设置透明光阻层单元，或者是直接所述平坦层向下填充所述BM层单元之间的空间位置，这一改变是为了对应本案的屏下摄像方案，使得外界更多的光线能够避免被有色色阻层单元的阻挡，通过所述透明光阻层单元更容易的进入到显示面板内，从而为所述摄像头提供更为足够的光线进行拍摄，进而使其拍摄效果更好、更优异。\n\n[0023]另外，由于所述背光组件在摄像头区域采用了中空的漏斗构型，其为一个倾斜形状，这就会使得其在所述摄像头区域的出光不均匀，而为了保证正常的显示效果，本案则通过在所述摄像头区域采用RGB三色mini-LED作为背光，并将漏斗形状的倾斜侧壁位置处的mini-LED光源单元进行环形阵列排布设计，在控制所述侧壁上每排mini-LED光源单元的驱动电压，甚至是每颗mini-LED光源的驱动电压，调整每排mini-LED光源的驱动电压，使其发光强度有所不同，最终使得各排光源单元在所述漏斗形状上开口即所述第一开孔处的出光均匀化，保证了所述摄像头区域处的显示效果。\n\n附图说明\n\n[0024]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0025]图1为本发明的一个实施方式中提供的一种显示面板模组的局部结构示意图，其中仅图示摄像头区域位置处的剖视结构；\n\n[0026]图2为图1所示的显示面板中的CF基板的局部结构示意图，其中仅图示摄像头区域位置处的剖视结构；\n\n[0027]图3为图1所示的背光组件的电路背板的结构示意图；\n\n[0028]图4为应用仿真软件对图1所示的结构而构建出的仿真架构图示；以及\n\n[0029]图5为图4所示仿真架构的出光效果的仿真结果图示。\n\n具体实施方式\n\n[0030]以下将结合附图和实施例，对本发明涉及的一种显示面板模组的技术方案作进一步的详细描述。\n\n[0031]请参阅图1所示，本发明的一个实施方式提供了一种显示面板模组，其包括显示面板、背光组件和摄像头30。\n\n[0032]其中所述显示面板定义有摄像头区域，其包括阵列基板10、液晶盒12和CF基板14。其中所述液晶盒12可以是PDLC或是PNLC中的一种，但不限于。\n\n[0033]进一步的，请参阅图2所示，其中所述CF基板包括基板玻璃142、光阻层和平坦层144。其中在所述摄像头区域的所述光阻层包括间隔设置的BM层单元143，所述BM层单元142之间相对于通常的BM层单元143之间设置三色的色阻层单元而言，本案则是改用设置透明光阻层单元，或者如图中所示，直接是所述平坦层144向下填充两所述BM层单元143之间的区域。\n\n[0034]其中所述背光组件包括电路背板20和设置在其上的光源单元22。其中所述光源单元22优选为mini-LED，但不限于。请参阅图3所示，其图示了所述电路背板20的结构，其包括依次叠置的白油墨层201、铜走线层202、第一胶层203、PI层204、第二胶层205以及底层铜层206。\n\n[0035]进一步的，请再参阅图1中所示，其中所述背光组件中的所述电路背板20在对应所述摄像头区域的位置处，向下倾斜凹陷形成一个上大下小两端开口的中空漏斗形状。\n\n[0036]其中所述中空漏斗形状为具有一定倾斜角度的环状构型，其由环形倾斜侧壁21包围形成，并在两端形成上、下两个开口，其中定义临近所述显示面板的上开口为第一开孔23，临近所述摄像头的下开口为第二开孔25，而其中间的剖面图形优选为倒等腰梯形，其倾角θ在30～70℃范围内；具体可以是35℃、45℃、50℃、60℃、65℃等等，可随需要而定并无限定。\n\n[0037]进一步的，其中所述第二开孔25的孔径等于或是小于所述摄像头30的孔径；当其小于时，则保持所述第二开孔的孔径小于所述摄像头30的孔径0～4mm，优选在1～2mm左右范围，以去除所述摄像头30不必要的镜头边框处区域位置。\n\n[0038]进一步的，其中所述中空漏斗形状的垂直深度H在50～600μm，具体数值，则可根据实际应用进行具体调整。根据所述深度H和所述倾角θ的具体选择，使得所述倾斜内侧壁21上间隔排列的光源单元22的排数有所不同，具体可在1～10排范围内选择。\n\n[0039]进一步的，由于所述侧壁21是倾斜设置，这就使得其上设置的各排光源单元22到所述第一开孔23处的距离有所不同，以所述光源单元22采用mini-LED为例，若是各排mini-LED光源单元均采用相同的驱动电压进行驱动，则这些光源单元因为所在排数的不同，使得各排光源单元22在所述第一开孔23位置处的出光是不均匀的，进而也就影响了后续在所述摄像头区域，所述显示面板的显示效果。\n\n[0040]对此，本发明采用了对环形内侧壁21上设置的各光源单元22或者是各排光源单元22进行单独控制的方式解决。以下以单独控制每颗光源单元22为例进行说明。\n\n[0041]具体为，首先在所述内侧壁21处设置的mini-LED光源单元采用三色RGB光源单元，并分排依次轮换间隔设置，例如，一排R颜色mini-LED光源单元、一排G颜色mini-LED光源单元、一排B颜色mini-LED光源单元，依次类推。\n\n[0042]然后采用初始驱动电压驱动所述环形倾斜内侧壁21上设置的各mini-LED光源单元22发光，并监测每个点位的亮度和色度，根据监测点位的色度和灰阶，并对比需要输出的画面在每个点位的色度和灰阶进行校正，然后对应调整所述侧壁上各RGB每颗LED的驱动电压，并将校正结果输入IC端驱动单颗LED，使其对不同的光源单元22给出不同的驱动电压，如此使得所述摄像头区域的显示面板区域输出正常画面。在分区设计上，所述环形倾斜内侧壁21位置处的光源单元22需要设计为单颗分区以实现单颗控制，其分区结果与对应于非摄像头区域的其他区域位置处的光源单元分区不同。\n\n[0043]进一步的，请参阅图4所示，其为根据本发明的构思选择合适的光学仿真软件来对图1所示的“漏斗型结构”处的出光及相关影响参数进行仿真。其中如图中所示的仿真架构，其下方为一环形阵列光源，模拟发光miniLED光源，上方为一接收面，模拟孔径处光线接收情况。通过控制环形带中光源的数量、光源的倾斜角度、光源自身的发光角度及接收面距离光源的位置等参数模拟上方孔径处的出光。\n\n[0044]图5为所述仿真架构参数优化后的仿真结果中的出光图示。其中当光源数量为30、倾角为60°、光源发光角度为160°以及接收面距离阵列光源1.5mm高时，孔径处出光最为均匀。进一步的，从变化趋势可以看出环形带上的LED光源数量越多，LED光源倾角适当，发光角度越大，接收面距离阵列光源的距离越远，孔径位置发光越均匀。由图5所示的仿真结果也表明通过图1所示的本发明涉及的所述“漏斗型”架构可得到摄像头孔径处均匀出光的设计方案。\n\n[0045]但在不同实施方式中，本案所揭示的所述“漏斗型”结构为一创作构思，其在不同实施方式中采用的具体结构，并不限定于上述揭示的仿真结构，上述图4即5所揭示的仿真模型以及匀光结果的图示，只是对本发明涉及构思的一个验证，而非限定。业界本领域内的一般技术人员可以是根据具体的实际情况，结合本案揭示的仿真过程，做出各种不脱离本案创作构思的具体变化，但这些变化都在本案的创作构思的揭示范围内。本发明涉及的一种显示面板模组，其采用新型的结构来结合摄像头单元，从而提供了一种新型的屏下摄像解决方案。\n\n[0046]其中，所述背光组件在摄像头区域采用中空漏斗形状，使得外界光线能够直接通过其进入到下方的摄像头中，以供所述摄像头进行正常的拍摄。进一步的，为保证更好的拍摄质量，所述显示面板的CF基板在所述摄像头区域的光阻层，相对于通常的BM层单元之间设置三色的色阻层单元而言，本案则是改用设置透明光阻层单元，或者是直接所述平坦层向下填充所述BM层单元之间的位置，这一改变是为了对应本案的屏下摄像方案，使得外界更多的光线能够避免被有色的色阻层单元阻挡，通过所述透明光阻层单元更容易的进入到显示面板内，从而为所述摄像头提供足够的光线进行拍摄，进而保证其拍摄效果。\n\n[0047]进一步的，由于所述背光组件在摄像头区域采用了中空的漏斗构型，其为一个倾斜形状，这就会使得其在所述摄像头区域的出光不均匀，而为了保证正常的显示效果，本案则通过在所述摄像头区域采用RGB三色mini-LED作为背光，并将漏斗形状的倾斜内侧壁位置处的mini-LED光源进行环形阵列排布设计，在控制所述侧壁上每排mini-LED光源的驱动电压，甚至是每颗mini-LED光源的驱动电压，调整每排mini-LED光源的驱动电压，使其发光强度有所不同，最终使得各排光源在所述漏斗形状上开口即所述第一开孔处的出光均匀化，保证了所述摄像头区域处的显示效果。\n\n[0048]本发明的技术范围不仅仅局限于上述说明中的内容，本领域技术人员可以在不脱离本发明技术思想的前提下，对上述实施例进行多种变形和修改，而这些变形和修改均应当属于本发明的范围内。', '技术领域\n\n[0001]本发明涉及平面显示技术领域，尤其是，其中的一种显示面板模组，其提供了一种屏下摄像解决方案。\n\n背景技术\n\n[0002]已知，随着LTPS小尺寸显示技术的不断发展推进，全面屏技术已成为手机市场的主流技术。\n\n[0003]但就目前而言，市场上推广的“全面屏”还处于一个伪全面屏的阶段，也就是说，其只是具有较高的屏占比，但还不是真正意义上的“全面屏”。对此，业界以全面屏为目标衍生出来的“notch型”全面屏、“美人尖型”全面屏及“盲孔型”全面屏等等技术层出不穷，其不断提升的屏占比也是不断将全面屏技术推向极致。\n\n[0004]然而，以上提及的这三种全面屏技术依然是需要将显示屏的部分区域进行挖孔或异形化处理，以将摄像头的位置区域露出，以便使外界光线进入供拍照使用，因此，这也就是这三种技术方案无法做到真正的全面屏显示方案的一个主要原因。\n\n[0005]为此，人们也试图通过让摄像头区域显示来进一步提升屏占比，但如何将摄像头拍照和其所在区域能够正常显示两者实现完美结合，目前业界还没有好的解决方案。\n\n发明内容\n\n[0006]本发明的一个方面是提供一种显示面板模组，其采用新型的面板结构、背光组件结构来结合其下方设置的摄像头单元，从而提供了一种新型的屏下摄像解决方案。\n\n[0007]本发明采用的技术方案如下：\n\n[0008]一种显示面板模组，包括显示面板，其定义有摄像头区域。所述显示面板下设置有背光组件(BLU)，背光组件下设置有一摄像头。其中所述背光组件包括电路背板和间隔设置在其上的光源单元。其中所述背光组件中的所述电路背板在对应所述摄像头区域的位置处，向下倾斜凹陷形成一个上大下小两端开口的中空漏斗形状；其中定义所述中空漏斗形状临近所述显示面板的上开口为第一开孔，临近所述摄像头的下开口为第二开孔。其中从所述显示面板外部入射的光线能够通过所述第一开孔和第二开孔进入到所述摄像头内以供其拍摄使用。\n\n[0009]进一步的，在不同实施方式中，其中所述第二开孔的孔径等于或是小于所述摄像头的孔径。\n\n[0010]进一步的，在不同实施方式中，其中所述第二开孔的孔径小于所述摄像头的孔径0～4mm。\n\n[0011]进一步的，在不同实施方式中，其中所述电路背板的中空漏斗形状的倾斜角度θ在30～70℃范围内。也就是说，其中所述中空漏斗形状的剖面为一个等腰倒梯形，其腰部的倾角范围在30～70℃。具体可以是35℃、45℃、50℃、60℃、65℃等等，可随实际需要而定并无限定。\n\n[0012]进一步的，在不同实施方式中，其中所述电路背板的中空漏斗形状的垂直深度在50～600μm。\n\n[0013]进一步的，在不同实施方式中，其中所述中空漏斗形状的倾斜内侧壁上间隔倾斜依次排列设置有1～10排所述光源单元，其中所述每排光源单元成环形排列设置。其中所述光源单元具体可以采用mini-LED型光源单元，但不限于。\n\n[0014]进一步的，在不同实施方式中，其中所述光源单元的发光角度范围为130～170度。优选为160度左右，但不限于。\n\n[0015]进一步的，在不同实施方式中，其中设置在所述中空漏斗形状倾斜内侧壁上的所述光源单元为每排光源单元单独控制。\n\n[0016]进一步的，在不同实施方式中，其中设置在所述中空漏斗形状倾斜内侧壁上的所述光源单元为每颗光源单元单独控制。\n\n[0017]进一步的，在不同实施方式中，其中设置在所述中空漏斗形状倾斜内侧壁上的不同排的所述光源单元的驱动电压是不相同的。\n\n[0018]进一步的，在不同实施方式中，其中对应所述摄像头区域设置的所述光源单元为依次轮换间隔排布的RGB三色mini-LED光源单元。\n\n[0019]进一步的，在不同实施方式中，其中所述显示面板包括阵列基板、液晶盒和CF基板。其中所述液晶盒可以是PDLC或是PNLC中的一种，但不限于。\n\n[0020]进一步的，在不同实施方式中，其中所述CF基板包括依次设置的基板玻璃、光阻层和平坦层(OC层)；其中在所述摄像头区域的所述光阻层包括间隔设置的BM层单元，所述BM层单元之间设置透明光阻层单元，或者是所述平坦层直接向下填充所述BM层单元之间的位置。\n\n[0021]相对于现有技术，本发明的有益效果是：本发明涉及的一种显示面板模组，其采用新型的面板结构、背光组件结构来结合其下方设置的摄像头单元，从而提供了一种新型的屏下摄像解决方案。\n\n[0022]进一步的，其中所述背光组件在摄像头区域采用中空漏斗形状，使得外界光线能够直接通过其进入到下方的摄像头中，以供下方的所述摄像头进行正常的拍摄。而为了进一步的保证所述摄像头更好的拍摄质量，所述显示面板的CF基板在所述摄像头区域采用了新型的光阻层结构，相对于通常的BM层单元之间设置三色的色阻层单元而言，本案则是改用设置透明光阻层单元，或者是直接所述平坦层向下填充所述BM层单元之间的空间位置，这一改变是为了对应本案的屏下摄像方案，使得外界更多的光线能够避免被有色色阻层单元的阻挡，通过所述透明光阻层单元更容易的进入到显示面板内，从而为所述摄像头提供更为足够的光线进行拍摄，进而使其拍摄效果更好、更优异。\n\n[0023]另外，由于所述背光组件在摄像头区域采用了中空的漏斗构型，其为一个倾斜形状，这就会使得其在所述摄像头区域的出光不均匀，而为了保证正常的显示效果，本案则通过在所述摄像头区域采用RGB三色mini-LED作为背光，并将漏斗形状的倾斜侧壁位置处的mini-LED光源单元进行环形阵列排布设计，在控制所述侧壁上每排mini-LED光源单元的驱动电压，甚至是每颗mini-LED光源的驱动电压，调整每排mini-LED光源的驱动电压，使其发光强度有所不同，最终使得各排光源单元在所述漏斗形状上开口即所述第一开孔处的出光均匀化，保证了所述摄像头区域处的显示效果。\n\n附图说明\n\n[0024]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0025]图1为本发明的一个实施方式中提供的一种显示面板模组的局部结构示意图，其中仅图示摄像头区域位置处的剖视结构；\n\n[0026]图2为图1所示的显示面板中的CF基板的局部结构示意图，其中仅图示摄像头区域位置处的剖视结构；\n\n[0027]图3为图1所示的背光组件的电路背板的结构示意图；\n\n[0028]图4为应用仿真软件对图1所示的结构而构建出的仿真架构图示；以及\n\n[0029]图5为图4所示仿真架构的出光效果的仿真结果图示。\n\n具体实施方式\n\n[0030]以下将结合附图和实施例，对本发明涉及的一种显示面板模组的技术方案作进一步的详细描述。\n\n[0031]请参阅图1所示，本发明的一个实施方式提供了一种显示面板模组，其包括显示面板、背光组件和摄像头30。\n\n[0032]其中所述显示面板定义有摄像头区域，其包括阵列基板10、液晶盒12和CF基板14。其中所述液晶盒12可以是PDLC或是PNLC中的一种，但不限于。\n\n[0033]进一步的，请参阅图2所示，其中所述CF基板包括基板玻璃142、光阻层和平坦层144。其中在所述摄像头区域的所述光阻层包括间隔设置的BM层单元143，所述BM层单元142之间相对于通常的BM层单元143之间设置三色的色阻层单元而言，本案则是改用设置透明光阻层单元，或者如图中所示，直接是所述平坦层144向下填充两所述BM层单元143之间的区域。\n\n[0034]其中所述背光组件包括电路背板20和设置在其上的光源单元22。其中所述光源单元22优选为mini-LED，但不限于。请参阅图3所示，其图示了所述电路背板20的结构，其包括依次叠置的白油墨层201、铜走线层202、第一胶层203、PI层204、第二胶层205以及底层铜层206。\n\n[0035]进一步的，请再参阅图1中所示，其中所述背光组件中的所述电路背板20在对应所述摄像头区域的位置处，向下倾斜凹陷形成一个上大下小两端开口的中空漏斗形状。\n\n[0036]其中所述中空漏斗形状为具有一定倾斜角度的环状构型，其由环形倾斜侧壁21包围形成，并在两端形成上、下两个开口，其中定义临近所述显示面板的上开口为第一开孔23，临近所述摄像头的下开口为第二开孔25，而其中间的剖面图形优选为倒等腰梯形，其倾角θ在30～70℃范围内；具体可以是35℃、45℃、50℃、60℃、65℃等等，可随需要而定并无限定。\n\n[0037]进一步的，其中所述第二开孔25的孔径等于或是小于所述摄像头30的孔径；当其小于时，则保持所述第二开孔的孔径小于所述摄像头30的孔径0～4mm，优选在1～2mm左右范围，以去除所述摄像头30不必要的镜头边框处区域位置。\n\n[0038]进一步的，其中所述中空漏斗形状的垂直深度H在50～600μm，具体数值，则可根据实际应用进行具体调整。根据所述深度H和所述倾角θ的具体选择，使得所述倾斜内侧壁21上间隔排列的光源单元22的排数有所不同，具体可在1～10排范围内选择。\n\n[0039]进一步的，由于所述侧壁21是倾斜设置，这就使得其上设置的各排光源单元22到所述第一开孔23处的距离有所不同，以所述光源单元22采用mini-LED为例，若是各排mini-LED光源单元均采用相同的驱动电压进行驱动，则这些光源单元因为所在排数的不同，使得各排光源单元22在所述第一开孔23位置处的出光是不均匀的，进而也就影响了后续在所述摄像头区域，所述显示面板的显示效果。\n\n[0040]对此，本发明采用了对环形内侧壁21上设置的各光源单元22或者是各排光源单元22进行单独控制的方式解决。以下以单独控制每颗光源单元22为例进行说明。\n\n[0041]具体为，首先在所述内侧壁21处设置的mini-LED光源单元采用三色RGB光源单元，并分排依次轮换间隔设置，例如，一排R颜色mini-LED光源单元、一排G颜色mini-LED光源单元、一排B颜色mini-LED光源单元，依次类推。\n\n[0042]然后采用初始驱动电压驱动所述环形倾斜内侧壁21上设置的各mini-LED光源单元22发光，并监测每个点位的亮度和色度，根据监测点位的色度和灰阶，并对比需要输出的画面在每个点位的色度和灰阶进行校正，然后对应调整所述侧壁上各RGB每颗LED的驱动电压，并将校正结果输入IC端驱动单颗LED，使其对不同的光源单元22给出不同的驱动电压，如此使得所述摄像头区域的显示面板区域输出正常画面。在分区设计上，所述环形倾斜内侧壁21位置处的光源单元22需要设计为单颗分区以实现单颗控制，其分区结果与对应于非摄像头区域的其他区域位置处的光源单元分区不同。\n\n[0043]进一步的，请参阅图4所示，其为根据本发明的构思选择合适的光学仿真软件来对图1所示的“漏斗型结构”处的出光及相关影响参数进行仿真。其中如图中所示的仿真架构，其下方为一环形阵列光源，模拟发光miniLED光源，上方为一接收面，模拟孔径处光线接收情况。通过控制环形带中光源的数量、光源的倾斜角度、光源自身的发光角度及接收面距离光源的位置等参数模拟上方孔径处的出光。\n\n[0044]图5为所述仿真架构参数优化后的仿真结果中的出光图示。其中当光源数量为30、倾角为60°、光源发光角度为160°以及接收面距离阵列光源1.5mm高时，孔径处出光最为均匀。进一步的，从变化趋势可以看出环形带上的LED光源数量越多，LED光源倾角适当，发光角度越大，接收面距离阵列光源的距离越远，孔径位置发光越均匀。由图5所示的仿真结果也表明通过图1所示的本发明涉及的所述“漏斗型”架构可得到摄像头孔径处均匀出光的设计方案。\n\n[0045]但在不同实施方式中，本案所揭示的所述“漏斗型”结构为一创作构思，其在不同实施方式中采用的具体结构，并不限定于上述揭示的仿真结构，上述图4即5所揭示的仿真模型以及匀光结果的图示，只是对本发明涉及构思的一个验证，而非限定。业界本领域内的一般技术人员可以是根据具体的实际情况，结合本案揭示的仿真过程，做出各种不脱离本案创作构思的具体变化，但这些变化都在本案的创作构思的揭示范围内。本发明涉及的一种显示面板模组，其采用新型的结构来结合摄像头单元，从而提供了一种新型的屏下摄像解决方案。\n\n[0046]其中，所述背光组件在摄像头区域采用中空漏斗形状，使得外界光线能够直接通过其进入到下方的摄像头中，以供所述摄像头进行正常的拍摄。进一步的，为保证更好的拍摄质量，所述显示面板的CF基板在所述摄像头区域的光阻层，相对于通常的BM层单元之间设置三色的色阻层单元而言，本案则是改用设置透明光阻层单元，或者是直接所述平坦层向下填充所述BM层单元之间的位置，这一改变是为了对应本案的屏下摄像方案，使得外界更多的光线能够避免被有色的色阻层单元阻挡，通过所述透明光阻层单元更容易的进入到显示面板内，从而为所述摄像头提供足够的光线进行拍摄，进而保证其拍摄效果。\n\n[0047]进一步的，由于所述背光组件在摄像头区域采用了中空的漏斗构型，其为一个倾斜形状，这就会使得其在所述摄像头区域的出光不均匀，而为了保证正常的显示效果，本案则通过在所述摄像头区域采用RGB三色mini-LED作为背光，并将漏斗形状的倾斜内侧壁位置处的mini-LED光源进行环形阵列排布设计，在控制所述侧壁上每排mini-LED光源的驱动电压，甚至是每颗mini-LED光源的驱动电压，调整每排mini-LED光源的驱动电压，使其发光强度有所不同，最终使得各排光源在所述漏斗形状上开口即所述第一开孔处的出光均匀化，保证了所述摄像头区域处的显示效果。\n\n[0048]本发明的技术范围不仅仅局限于上述说明中的内容，本领域技术人员可以在不脱离本发明技术思想的前提下，对上述实施例进行多种变形和修改，而这些变形和修改均应当属于本发明的范围内。');
INSERT INTO `os_patent_instruction_text` VALUES (10688, 23742, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种显示面板及电子设备。\n\n背景技术\n\n[0002]随着智能手机的更新换代，高屏占比手机市占率越来越高。为了提高屏占比，手机厂商会尽量把传感器设计到屏幕下。目前，屏下指纹识别技术已经实现商用，屏幕发声，屏下虹膜识别技术也越来越成熟，促进了屏占比进一步提高。然而，前置摄像头对成像质量要求较高，而屏下摄像头成像质量不佳，使得屏下摄像头的实现难度较大。\n\n[0003]目前，有机发光二极管显示面板的屏幕分为屏下摄像头区域和非屏下摄像头区域，前置摄像头处于屏下摄像头区域下方。非屏下摄像头区域每英寸像素的数目较高，占屏幕比例较高，可以较为细腻的显示画面；屏下摄像头区域每英寸像素的数目较低，可以显示简单画面。屏下摄像头区域有部分区域无金属走线，可以透过光线，用于前置摄像头拍照使用。由于屏下摄像头区域每英寸像素的数目较低，发光面积小，导致屏下摄像头区域亮度较低。为了提高屏下摄像头区域的亮度，需要提高屏下摄像头区域的亮度，如此，会导致屏下摄像头区域有机发光二极管的寿命变短，长时间使用会导致屏下摄像头区域亮度异常，出现显示不良的问题。\n\n[0004]因此，有必要提出一种技术方案以解决屏下摄像头区域需要保证透光率以及发光亮度而导致该有机发光二极管显示面板出现显示不良的问题。\n\n发明内容\n\n[0005]本申请的目的在于提供一种显示面板及电子设备，该显示面板的透光显示区具有高透光率和良好的发光亮度，且能避免显示面板和电子设备出现显示不良的问题。\n\n[0006]为实现上述目的，技术方案如下。\n\n[0007]一种显示面板，所述显示面板具有一显示区以及位于所述显示区外的显示透光区，所述显示透光区设置有至少一第一显示像素单元，所述第一显示像素单元包括至少一微型发光二极管。\n\n[0008]在上述显示面板中，所述显示区设置有阵列排布的多个第二显示像素单元，所述第二显示像素单元包括有机发光二极管。\n\n[0009]在上述显示面板中，所述显示透光区设置有多个所述第一显示像素单元，所述显示区中所述第二显示像素单元的密度大于所述显示透光区中所述第一显示像素单元的密度。\n\n[0010]在上述显示面板中，每个所述第一显示像素单元由一红光微型发光二极管、一蓝光微型发光二极管以及一绿光微型发光二极管组成，每个所述第二显示像素单元由一红光有机发光二极管、蓝光有机发光二极管以及一绿光有机发光二极管组成。\n\n[0011]在上述显示面板中，任意两个相邻所述第一显示像素单元之间的间距大于任意两个相邻所述第二显示像素单元的间距。\n\n[0012]在上述显示面板中，所述显示面板还包括封装层，所述封装层形成于所述显示区的所述第二显示像素单元上以封装所述第二显示像素单元。\n\n[0013]在上述显示面板中，所述显示面板还包括薄膜晶体管阵列基板，所述薄膜晶体管阵列基板的所述显示透光区设置有第一薄膜晶体管，所述薄膜晶体管阵列基板的所述显示区设置有第二薄膜晶体管，所述第一薄膜晶体管与所述微型发光二极管对应设置且电性连接，所述第二薄膜晶体管与所述有机发光二极管对应设置且电性连接。\n\n[0014]在上述显示面板中，所述第一显示像素单元的尺寸小于等于所述第二显示像素单元的尺寸。\n\n[0015]在上述显示面板中，所述第一显示像素单元在所述显示透光区占用的面积与所述显示透光区的面积的比值的取值范围为2/5-3/5。\n\n[0016]一种电子设备，所述电子设备包括上述显示面板、前置摄像头以及主板，所述主板与所述前置摄像头以及所述显示面板均电性连接，所述前置摄像头位于所述显示面板的一侧且对应所述显示透光区设置，所述主板位于所述前置摄像头远离所述显示面板的一侧。\n\n[0017]有益效果：本申请提供一种显示面板及电子设备，通过在显示透光区设置微型发光二极管以进行显示，使得显示透光区具有高透光率以及高显示亮度的同时，避免显示面板和电子设备出现显示不良的问题。\n\n附图说明\n\n[0018]图1为本申请实施例显示面板的平面示意图；\n\n[0019]图2A为图1所示显示面板的显示区的一种局部放大示意图；\n\n[0020]图2B为图1所示显示面板的显示透光区的一种局部放大示意图；\n\n[0021]图3为图1所示显示面板的显示区的另一种局部放大示意图；\n\n[0022]图4为沿图1所示显示面板的A-A切线的截面示意图；\n\n[0023]图5为本申请实施例电子设备的结构示意图。\n\n具体实施方式\n\n[0024]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0025]请参阅图1，其为本申请实施例显示面板的平面示意图。显示面板100具有一显示区100a以及显示透光区100b。显示区100a用于显示图像，显示透光区100b用于显示图像的同时，也用于透过外界射入至显示面板100的光线。显示区100a的面积大于显示透光区100b的面积。显示透光区100b可以位于显示面板100的一端的中间位置，也可以靠近显示面板100外围边缘或转角的位置，显示透光区100b也可以位于显示面板100的中间位置。显示透光区100b的形状可以为圆形以及矩形，也可以为U型。显示透光区100b设置有至少一第一显示像素单元，第一显示像素单元包括至少一微型发光二极管。\n\n[0026]微型发光二极管(Micro Light Emitting Diode)的发光材料为无机材料。微型发光二极管具有尺寸小、发光效率高以及寿命长的优点，在显示透光区100b使用微型发光二极管作为显示像素单元可以使得透光显示区100b具有高透光率的同时，显示透光区100b的显示亮度高，且显示透光区100b的显示亮度不会随着显示面板使用时间的延长而出现明显的衰减，避免显示面板出现显示不良的问题。微型发光二极管的尺寸为5微米-50微米。一般而言，微型发光二极管由阴极、阳极以及位于阴极和阳极之间的无机半导体层形成。微型发光二极管的发光颜色与半导体禁带宽度相关，蓝光微型发光二极管采用禁带宽度较宽的半导体，红光微型发光二极管采用禁带宽度较窄的半导体。\n\n[0027]本申请实施例显示面板通过在显示透光区设置微型有机发光二极管以进行显示，使得显示透光区具有高透光率以及高显示亮度的同时，避免显示面板出现显示不良的问题。\n\n[0028]请参阅图2A和图2B，图2A为图1所示显示面板的显示区的一种局部放大示意图，图2B为图1所示显示面板的显示透光区的一种局部放大示意图。显示区100a设置有阵列排布的多个第二显示像素单元P2，第二显示像素单元P2包括有机发光二极管。显示透光区100b设置有多个第一显示像素单元P1。\n\n[0029]相对于显示区和透光显示区全部设置微型发光二极管以作为显示单元，本实施例显示面板采用显示区100a设置有机发光二极管，而显示透光区100b设置微型发光二极管，能避免出现显示面板制造过程中微型发光二极管的转移良率低造成微型发光二极管易受损，导致显示面板显示异常的问题。相对于显示区和显示透光区全部设置有机发光二极管以作为显示单元，本实施例显示面板能保证显示透光区100b的显示亮度高的同时，避免显示面板出现显示问题。\n\n[0030]在显示透光区100b，第一显示像素单元P1所占用的空间为显示透光区100b的显示区100c，任意两个相邻第一显示像素单元P1之间的间隙为显示透光区100b的透光区100d。为了使显示面板100的显示透光区100b的显示效果和透光效果达到均衡，第一显示像素单元P1在显示透光区100b占用的面积与显示透光区100b的面积的比值的取值范围为2/5-3/5。\n\n[0031]显示区100a中第二显示像素单元P2的密度大于显示透光区100b中第一显示像素单元P1的密度，提高显示区的显示效果的同时，提高显示透光区100b的显示和透光效果。第一显示像素单元P1的尺寸小于等于第二显示像素单元P2的尺寸。任意两个相邻的第一显示像素单元P1之间的间距大于任意两个相邻的第二显示像素单元P2之间的间距。具体地，任意两个相邻的第一显示像素单元P1之间的间距为任意两个相邻的第二显示像素单元P2的间距的2-7倍。例如，任意两个相邻的第一显示像素单元P1之间的间距为50微米-100微米，任意两个相邻的第二显示像素单元P2之间的间距为15微米-25微米。需要说明的是，显示区100a中第二显示像素单元P2之间的间隙较小无法透光。\n\n[0032]为了使显示区100a和显示透光区100b的显示画面具有均一性，每个第一显示像素单元P1由一红光微型发光二极管R1、一蓝光微型发光二极管B1以及一绿光微型发光二极管G1组成，每个第二显示像素单元P2由一红光有机发光二极管R2、蓝光有机发光二极管B2以及一绿光有机发光二极管组成G2。可以理解的是，每个第一显示像素单元P1还可以包括白光微型发光二极管，每个第二显示像素单元P2还可以包括白光有机发光二极管。第一显示像素单元P1和第二显示像素单元P2均采用标准RGB排列方式。\n\n[0033]可以理解的是，每个第一显示像素单元P1采用标准RGB排列方式的同时，第二显示像素单元P2可以采用RGB Pentile排列方式，以适应显示区100a中第二显示像素单元P2的密度大而显示透光区100b中第一显示像素单元P1的密度小，即保证显示区100a和显示透光区100b的显示效果的同时，更好地利用显示区100a和显示透光区100b的空间。\n\n[0034]具体地，如图3所示，图3为图1所示显示面板的显示区的另一种局部放大示意图。部分第二显示像素单元P2由红光有机发光二极管R2以及绿光有机发光二极管G2组成，其余部分第二显示像素单元P2由蓝色有机发光二极管B2以及绿色有机发光二极管G2组成。第一显示像素单元P1由红光微型发光二极管管R1、蓝光微型发光二极管B1以及绿光微型发光二极管G1组成。\n\n[0035]请参阅图4，其为沿图1所示显示面板的A-A切线的截面示意图。显示面板100还包括封装层11，封装层11形成于显示区100a的第二显示像素单元P2上以封装第二显示像素单元P2，从而避免显示区100a的第二显示像素单元P2中的有机发光层与环境中的水以及氧气接触而导致显示面板100显示异常的问题。封装层11不形成于显示透光区100b以保证显示透光区100b的透光率。\n\n[0036]显示面板100还包括薄膜晶体管阵列基板12，薄膜晶体管阵列基板12的显示透光区100b设置有第一薄膜晶体管T1，薄膜晶体管阵列基板12的显示区100设置有第二薄膜晶体管T2。第一显示像素单元P1设置于薄膜晶体管阵列基板12上且对应第一薄膜晶体管T1设置，第二显示像素单元P2设置于薄膜晶体管阵列基板12上且对应第二薄膜晶体管T2设置。第一薄膜晶体管T1与微型发光二极对应设置且电性连接，第二薄膜晶体管T2与有机发光二极管对应设置且电性连接。具体地，第一薄膜晶体管T1与微型发光二极管一一对应设置且电性连接，第二薄膜晶体管T2与有机发光二极管一一对应设置且电性连接。第一薄膜晶体管T1用于控制组成第一显示像素单元P1的子像素的工作状态，第二薄膜晶体管T2用于控制组成第二显示像素单元P2的子像素的工作状态。\n\n[0037]微型发光二极管和有机发光二极管的亮度不同时，为了避免显示区100a和显示透光区100b之间的亮度平滑过渡，显示透光区100b包括第一显示透光区(未示出)和第二显示透光区(未示出)，第一显示透光区位于显示区100a和第二显示透光区之间，第一显示透光区作为显示亮度渐变区，第一显示透光区的第一薄膜晶体管T1对应的数据电压从靠近显示区100a至靠近第二显示透光区逐渐变化，第一显示透光区的亮度等于第二显示透光区靠近第一显示透光区的亮度。第二显示透光区为圆形时，第一显示透光区为环形。例如，微型发光二极管的亮度大于有机发光二极管的亮度时，使得第二显示透光区的第一薄膜晶体管对应的数据电压从靠近显示区100a至靠近第二显示透光区的方向逐渐增大；微型发光二极管的亮度小于有机发光二极管的亮度时，使得第一显示透光区的第一薄膜晶体管T1对应的数据电压从靠近显示区100a至靠近第二显示透光区的方向逐渐减小，以避免观察到显示区和显示透光区之间的边界。\n\n[0038]可以理解的是，也可以通过调整第一薄膜晶体管T1和第二薄膜晶体管T2的数据电压，以使得第一显示像素单元P1和第二显示像素单元P2的显示亮度基本相同，以提高显示面板显示效果的均一性。\n\n[0039]请参阅图5，其为本申请实施例电子设备的结构示意图。电子设备可以为智能移动终端、平板电脑等。电子设备包括上述显示面板100、前置摄像头200以及主板300，主板300与前置摄像头200以及显示面板100均电性连接，前置摄像头200位于显示面板100的一侧且对应显示透光区100b设置，主板300位于前置摄像头200远离显示面板100的一侧。\n\n[0040]本申请实施例电子设备通过在显示透光区设置微型有机发光二极管以使得显示透光区具有高透光率以及高显示亮度的同时，保证外界的环境光能穿过显示透光区的透光区部分并入射至前置摄像头，并避免电子设备出现显示不良的问题。\n\n[0041]以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种显示面板及电子设备。\n\n背景技术\n\n[0002]随着智能手机的更新换代，高屏占比手机市占率越来越高。为了提高屏占比，手机厂商会尽量把传感器设计到屏幕下。目前，屏下指纹识别技术已经实现商用，屏幕发声，屏下虹膜识别技术也越来越成熟，促进了屏占比进一步提高。然而，前置摄像头对成像质量要求较高，而屏下摄像头成像质量不佳，使得屏下摄像头的实现难度较大。\n\n[0003]目前，有机发光二极管显示面板的屏幕分为屏下摄像头区域和非屏下摄像头区域，前置摄像头处于屏下摄像头区域下方。非屏下摄像头区域每英寸像素的数目较高，占屏幕比例较高，可以较为细腻的显示画面；屏下摄像头区域每英寸像素的数目较低，可以显示简单画面。屏下摄像头区域有部分区域无金属走线，可以透过光线，用于前置摄像头拍照使用。由于屏下摄像头区域每英寸像素的数目较低，发光面积小，导致屏下摄像头区域亮度较低。为了提高屏下摄像头区域的亮度，需要提高屏下摄像头区域的亮度，如此，会导致屏下摄像头区域有机发光二极管的寿命变短，长时间使用会导致屏下摄像头区域亮度异常，出现显示不良的问题。\n\n[0004]因此，有必要提出一种技术方案以解决屏下摄像头区域需要保证透光率以及发光亮度而导致该有机发光二极管显示面板出现显示不良的问题。\n\n发明内容\n\n[0005]本申请的目的在于提供一种显示面板及电子设备，该显示面板的透光显示区具有高透光率和良好的发光亮度，且能避免显示面板和电子设备出现显示不良的问题。\n\n[0006]为实现上述目的，技术方案如下。\n\n[0007]一种显示面板，所述显示面板具有一显示区以及位于所述显示区外的显示透光区，所述显示透光区设置有至少一第一显示像素单元，所述第一显示像素单元包括至少一微型发光二极管。\n\n[0008]在上述显示面板中，所述显示区设置有阵列排布的多个第二显示像素单元，所述第二显示像素单元包括有机发光二极管。\n\n[0009]在上述显示面板中，所述显示透光区设置有多个所述第一显示像素单元，所述显示区中所述第二显示像素单元的密度大于所述显示透光区中所述第一显示像素单元的密度。\n\n[0010]在上述显示面板中，每个所述第一显示像素单元由一红光微型发光二极管、一蓝光微型发光二极管以及一绿光微型发光二极管组成，每个所述第二显示像素单元由一红光有机发光二极管、蓝光有机发光二极管以及一绿光有机发光二极管组成。\n\n[0011]在上述显示面板中，任意两个相邻所述第一显示像素单元之间的间距大于任意两个相邻所述第二显示像素单元的间距。\n\n[0012]在上述显示面板中，所述显示面板还包括封装层，所述封装层形成于所述显示区的所述第二显示像素单元上以封装所述第二显示像素单元。\n\n[0013]在上述显示面板中，所述显示面板还包括薄膜晶体管阵列基板，所述薄膜晶体管阵列基板的所述显示透光区设置有第一薄膜晶体管，所述薄膜晶体管阵列基板的所述显示区设置有第二薄膜晶体管，所述第一薄膜晶体管与所述微型发光二极管对应设置且电性连接，所述第二薄膜晶体管与所述有机发光二极管对应设置且电性连接。\n\n[0014]在上述显示面板中，所述第一显示像素单元的尺寸小于等于所述第二显示像素单元的尺寸。\n\n[0015]在上述显示面板中，所述第一显示像素单元在所述显示透光区占用的面积与所述显示透光区的面积的比值的取值范围为2/5-3/5。\n\n[0016]一种电子设备，所述电子设备包括上述显示面板、前置摄像头以及主板，所述主板与所述前置摄像头以及所述显示面板均电性连接，所述前置摄像头位于所述显示面板的一侧且对应所述显示透光区设置，所述主板位于所述前置摄像头远离所述显示面板的一侧。\n\n[0017]有益效果：本申请提供一种显示面板及电子设备，通过在显示透光区设置微型发光二极管以进行显示，使得显示透光区具有高透光率以及高显示亮度的同时，避免显示面板和电子设备出现显示不良的问题。\n\n附图说明\n\n[0018]图1为本申请实施例显示面板的平面示意图；\n\n[0019]图2A为图1所示显示面板的显示区的一种局部放大示意图；\n\n[0020]图2B为图1所示显示面板的显示透光区的一种局部放大示意图；\n\n[0021]图3为图1所示显示面板的显示区的另一种局部放大示意图；\n\n[0022]图4为沿图1所示显示面板的A-A切线的截面示意图；\n\n[0023]图5为本申请实施例电子设备的结构示意图。\n\n具体实施方式\n\n[0024]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0025]请参阅图1，其为本申请实施例显示面板的平面示意图。显示面板100具有一显示区100a以及显示透光区100b。显示区100a用于显示图像，显示透光区100b用于显示图像的同时，也用于透过外界射入至显示面板100的光线。显示区100a的面积大于显示透光区100b的面积。显示透光区100b可以位于显示面板100的一端的中间位置，也可以靠近显示面板100外围边缘或转角的位置，显示透光区100b也可以位于显示面板100的中间位置。显示透光区100b的形状可以为圆形以及矩形，也可以为U型。显示透光区100b设置有至少一第一显示像素单元，第一显示像素单元包括至少一微型发光二极管。\n\n[0026]微型发光二极管(Micro Light Emitting Diode)的发光材料为无机材料。微型发光二极管具有尺寸小、发光效率高以及寿命长的优点，在显示透光区100b使用微型发光二极管作为显示像素单元可以使得透光显示区100b具有高透光率的同时，显示透光区100b的显示亮度高，且显示透光区100b的显示亮度不会随着显示面板使用时间的延长而出现明显的衰减，避免显示面板出现显示不良的问题。微型发光二极管的尺寸为5微米-50微米。一般而言，微型发光二极管由阴极、阳极以及位于阴极和阳极之间的无机半导体层形成。微型发光二极管的发光颜色与半导体禁带宽度相关，蓝光微型发光二极管采用禁带宽度较宽的半导体，红光微型发光二极管采用禁带宽度较窄的半导体。\n\n[0027]本申请实施例显示面板通过在显示透光区设置微型有机发光二极管以进行显示，使得显示透光区具有高透光率以及高显示亮度的同时，避免显示面板出现显示不良的问题。\n\n[0028]请参阅图2A和图2B，图2A为图1所示显示面板的显示区的一种局部放大示意图，图2B为图1所示显示面板的显示透光区的一种局部放大示意图。显示区100a设置有阵列排布的多个第二显示像素单元P2，第二显示像素单元P2包括有机发光二极管。显示透光区100b设置有多个第一显示像素单元P1。\n\n[0029]相对于显示区和透光显示区全部设置微型发光二极管以作为显示单元，本实施例显示面板采用显示区100a设置有机发光二极管，而显示透光区100b设置微型发光二极管，能避免出现显示面板制造过程中微型发光二极管的转移良率低造成微型发光二极管易受损，导致显示面板显示异常的问题。相对于显示区和显示透光区全部设置有机发光二极管以作为显示单元，本实施例显示面板能保证显示透光区100b的显示亮度高的同时，避免显示面板出现显示问题。\n\n[0030]在显示透光区100b，第一显示像素单元P1所占用的空间为显示透光区100b的显示区100c，任意两个相邻第一显示像素单元P1之间的间隙为显示透光区100b的透光区100d。为了使显示面板100的显示透光区100b的显示效果和透光效果达到均衡，第一显示像素单元P1在显示透光区100b占用的面积与显示透光区100b的面积的比值的取值范围为2/5-3/5。\n\n[0031]显示区100a中第二显示像素单元P2的密度大于显示透光区100b中第一显示像素单元P1的密度，提高显示区的显示效果的同时，提高显示透光区100b的显示和透光效果。第一显示像素单元P1的尺寸小于等于第二显示像素单元P2的尺寸。任意两个相邻的第一显示像素单元P1之间的间距大于任意两个相邻的第二显示像素单元P2之间的间距。具体地，任意两个相邻的第一显示像素单元P1之间的间距为任意两个相邻的第二显示像素单元P2的间距的2-7倍。例如，任意两个相邻的第一显示像素单元P1之间的间距为50微米-100微米，任意两个相邻的第二显示像素单元P2之间的间距为15微米-25微米。需要说明的是，显示区100a中第二显示像素单元P2之间的间隙较小无法透光。\n\n[0032]为了使显示区100a和显示透光区100b的显示画面具有均一性，每个第一显示像素单元P1由一红光微型发光二极管R1、一蓝光微型发光二极管B1以及一绿光微型发光二极管G1组成，每个第二显示像素单元P2由一红光有机发光二极管R2、蓝光有机发光二极管B2以及一绿光有机发光二极管组成G2。可以理解的是，每个第一显示像素单元P1还可以包括白光微型发光二极管，每个第二显示像素单元P2还可以包括白光有机发光二极管。第一显示像素单元P1和第二显示像素单元P2均采用标准RGB排列方式。\n\n[0033]可以理解的是，每个第一显示像素单元P1采用标准RGB排列方式的同时，第二显示像素单元P2可以采用RGB Pentile排列方式，以适应显示区100a中第二显示像素单元P2的密度大而显示透光区100b中第一显示像素单元P1的密度小，即保证显示区100a和显示透光区100b的显示效果的同时，更好地利用显示区100a和显示透光区100b的空间。\n\n[0034]具体地，如图3所示，图3为图1所示显示面板的显示区的另一种局部放大示意图。部分第二显示像素单元P2由红光有机发光二极管R2以及绿光有机发光二极管G2组成，其余部分第二显示像素单元P2由蓝色有机发光二极管B2以及绿色有机发光二极管G2组成。第一显示像素单元P1由红光微型发光二极管管R1、蓝光微型发光二极管B1以及绿光微型发光二极管G1组成。\n\n[0035]请参阅图4，其为沿图1所示显示面板的A-A切线的截面示意图。显示面板100还包括封装层11，封装层11形成于显示区100a的第二显示像素单元P2上以封装第二显示像素单元P2，从而避免显示区100a的第二显示像素单元P2中的有机发光层与环境中的水以及氧气接触而导致显示面板100显示异常的问题。封装层11不形成于显示透光区100b以保证显示透光区100b的透光率。\n\n[0036]显示面板100还包括薄膜晶体管阵列基板12，薄膜晶体管阵列基板12的显示透光区100b设置有第一薄膜晶体管T1，薄膜晶体管阵列基板12的显示区100设置有第二薄膜晶体管T2。第一显示像素单元P1设置于薄膜晶体管阵列基板12上且对应第一薄膜晶体管T1设置，第二显示像素单元P2设置于薄膜晶体管阵列基板12上且对应第二薄膜晶体管T2设置。第一薄膜晶体管T1与微型发光二极对应设置且电性连接，第二薄膜晶体管T2与有机发光二极管对应设置且电性连接。具体地，第一薄膜晶体管T1与微型发光二极管一一对应设置且电性连接，第二薄膜晶体管T2与有机发光二极管一一对应设置且电性连接。第一薄膜晶体管T1用于控制组成第一显示像素单元P1的子像素的工作状态，第二薄膜晶体管T2用于控制组成第二显示像素单元P2的子像素的工作状态。\n\n[0037]微型发光二极管和有机发光二极管的亮度不同时，为了避免显示区100a和显示透光区100b之间的亮度平滑过渡，显示透光区100b包括第一显示透光区(未示出)和第二显示透光区(未示出)，第一显示透光区位于显示区100a和第二显示透光区之间，第一显示透光区作为显示亮度渐变区，第一显示透光区的第一薄膜晶体管T1对应的数据电压从靠近显示区100a至靠近第二显示透光区逐渐变化，第一显示透光区的亮度等于第二显示透光区靠近第一显示透光区的亮度。第二显示透光区为圆形时，第一显示透光区为环形。例如，微型发光二极管的亮度大于有机发光二极管的亮度时，使得第二显示透光区的第一薄膜晶体管对应的数据电压从靠近显示区100a至靠近第二显示透光区的方向逐渐增大；微型发光二极管的亮度小于有机发光二极管的亮度时，使得第一显示透光区的第一薄膜晶体管T1对应的数据电压从靠近显示区100a至靠近第二显示透光区的方向逐渐减小，以避免观察到显示区和显示透光区之间的边界。\n\n[0038]可以理解的是，也可以通过调整第一薄膜晶体管T1和第二薄膜晶体管T2的数据电压，以使得第一显示像素单元P1和第二显示像素单元P2的显示亮度基本相同，以提高显示面板显示效果的均一性。\n\n[0039]请参阅图5，其为本申请实施例电子设备的结构示意图。电子设备可以为智能移动终端、平板电脑等。电子设备包括上述显示面板100、前置摄像头200以及主板300，主板300与前置摄像头200以及显示面板100均电性连接，前置摄像头200位于显示面板100的一侧且对应显示透光区100b设置，主板300位于前置摄像头200远离显示面板100的一侧。\n\n[0040]本申请实施例电子设备通过在显示透光区设置微型有机发光二极管以使得显示透光区具有高透光率以及高显示亮度的同时，保证外界的环境光能穿过显示透光区的透光区部分并入射至前置摄像头，并避免电子设备出现显示不良的问题。\n\n[0041]以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10689, 23743, '技术领域\n\n[0001]本发明属于背光技术领域，尤其涉及一种背光模组及其制备方法。\n\n背景技术\n\n[0002]次毫米发光二极管(mini Light Emitting Diode，miniLED)作为一种直下式显示背光源，具有高亮、高对比、可实现区域调光显示、异形可弯曲、窄边框等诸多优势，成为人们关注的焦点。\n\n[0003]然而，由于鉴于成本及厚度方面的考量，miniLED使用在小尺寸显示屏上已无法满足市场对价格期待，利基性不强。而在中尺寸车载及电竞显示屏上，miniLED优势较为突出，可利用其来实现显示屏高亮度和高对比度的特性。但是，中尺寸miniLED样品由于受到目前机台大小的限制而多数无法实现整版的一次性成型，同时固晶机台在打件尺寸设计上也需要兼顾尺寸和量产效率，无法将固晶尺寸进行无限放大，这样会导致样品在背光模组成型时大多采用拼接的方式。如此，对于拼接背光而言，容易产生较为明显的拼接缝隙，并且在显示上会存在拼接暗线且不易消除，进而影响显示画质。\n\n[0004]因此需要对现有技术中的问题提出解决方法。\n\n发明内容\n\n[0005]本发明的目的在于，提供一种背光模组及其制备方法，通过将灯板拼接于补强板上，并采用双面胶固定，然后对背光模组整体进行膜压或流延工艺，使miniLED的荧光膜形成整面结构，以避免光在荧光膜传播中的波导阻断，从而改善拼接暗线。\n\n[0006]根据本发明的一方面，本发明实施例提供一种背光模组，其包括：补强板；至少一灯板，设于所述补强板上；多个芯片，设于所述至少一灯板上；以及荧光膜，覆盖于所述多个芯片及所述至少一灯板上。\n\n[0007]进一步地，所述至少一灯板是拼接板。\n\n[0008]根据本发明的另一方面，本发明提供一种背光模组的制备方法，其包括提供至少一灯板；将多个芯片固定于所述至少一灯板上；将固定有所述多个芯片的所述至少一灯板设于一补强板上；在所述至少一灯板和所述多个芯片上形成荧光膜；以及对所述背光模板进行加工处理。\n\n[0009]进一步地，所述多个芯片通过回流焊工艺及流延工艺以覆膜方式固定于所述至少一灯板上。\n\n[0010]进一步地，在所述将多个芯片固定于所述至少一灯板上的步骤中，还包括对所述至少一灯板进行切割。\n\n[0011]进一步地，所述切割为单边切割，所述切割的方式为刀轮切割或激光切割。\n\n[0012]进一步地，所述至少一灯板是拼接板，通过粘合剂拼接于所述补强板上。\n\n[0013]进一步地，所述粘合剂包括双面胶。\n\n[0014]进一步地，所述荧光膜通过膜压或流延工艺设于所述至少一灯板和所述多个芯片上。\n\n[0015]进一步地，所述加工处理包括：对形成有荧光膜的所述背光模组进行烘烤；以及对所述背光模组进行切割处理。\n\n[0016]本发明实施例通过将灯板拼接于补强板上，并采用双面胶固定，然后对背光模组整体进行膜压或流延工艺，使miniLED的荧光膜形成整面结构，以避免光在荧光膜传播中的波导阻断，从而改善拼接暗线。\n\n附图说明\n\n[0017]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其有益效果显而易见。\n\n[0018]图1是本发明实施例提供的背光模组的结构示意图。\n\n[0019]图2是本发明实施例提供的背光模组的制备方法的流程示意图。\n\n[0020]图3至图7是本发明实施例提供的背光模组的形成示意图。\n\n具体实施方式\n\n[0021]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0022]本发明的说明书和权利要求书以及上述附图中的术语“第一”、“第二”、“第三”等(如果存在)是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。应当理解，这样描述的对象在适当情况下可以互换。此外，术语“包括”和“具有”以及他们的任何变形，意图在于覆盖不排他的包含。\n\n[0023]在具体实施方式中，下文论述的附图以及用来描述本发明公开的原理的各实施例仅用于说明，而不应解释为限制本发明公开的范围。所属领域的技术人员将理解，本发明的原理可在任何适当布置的系统中实施。将详细说明示例性实施方式，在附图中示出了这些实施方式的实例。此外，将参考附图详细描述根据示例性实施例的终端。附图中的相同附图标号指代相同的元件。\n\n[0024]本具体实施方式中使用的术语仅用来描述特定实施方式，而并不意图显示本发明的概念。除非上下文中有明确不同的意义，否则，以单数形式使用的表达涵盖复数形式的表达。在本发明说明书中，应理解，诸如“包括”、“具有”以及“含有”等术语意图说明存在本发明说明书中揭示的特征、数字、步骤、动作或其组合的可能性，而并不意图排除可存在或可添加一个或多个其他特征、数字、步骤、动作或其组合的可能性。附图中的相同参考标号指代相同部分。\n\n[0025]如图1所示，本发明实施例提供一种背光模组，包括至少一灯板1、多个芯片2、补强板3以及荧光膜4。\n\n[0026]其中，至少一灯板1设于补强板3上。在本实施例中，至少一灯板1是拼接板，补强板3起支撑补强作用，使得至少一灯板1能够在补强板3上先完成拼接作业。至少一灯板1通过粘合剂固定在补强板3上。具体的，粘合剂包括但不限于双面胶。\n\n[0027]多个芯片2设于至少一灯板上1。其中多个芯片2通过固晶作业利用固晶胶固定在至少一灯板1上，所述固晶胶包括导电胶和绝缘胶。具体地，导电胶可以为银胶，绝缘胶可以为透明胶。胶膜厚度为0.1-0.15毫米，主要起到固定芯片的作用。\n\n[0028]其中，固晶又称为Die Bond或装片。固晶即通过固晶胶把晶片粘结在支架的指定区域，形成热通路或电通路，为后序的打线连接提供条件的工序。\n\n[0029]荧光膜4覆盖于多个芯片2及至少一灯板1上。荧光膜4的厚度为0.15-0.4毫米，其组份包括荧光粉和光学透明胶(Optically CleaR Adhesive，简称OCA)，光学透明胶和荧光粉混合即形成荧光膜片20。荧光膜4为整面覆膜方式成型，以保证拼接缝处荧光膜4与周边非拼接区的一致性。由于荧光膜4介质整面均匀性较好，因此保证多个芯片2的出光后在荧光膜4中均匀传导，特别在拼接缝处光线传导不受阻断，避免常规拼接方式中荧光膜4阻断造成的断面处出光的角度选择性问题。由于光线在整面荧光膜4内传导较为均匀，膜层表面不同位置各角度的出光较为均匀，从而避免了暗缝现象的存在。\n\n[0030]如图2所示，本发明实施例提供一种背光模组的制备方法，其包括以下步骤。\n\n[0031]步骤S10，提供至少一灯板1，如图3所示。\n\n[0032]在本发明实施例中，至少一灯板为拼接板。\n\n[0033]步骤S20，将多个芯片2固定于所述至少一灯板1上，如图4所示。\n\n[0034]在本发明实施例中，将多个芯片2在至少一灯板1上进行固晶作业，通过回流焊工艺后确保灯板整面点亮及亮度一致性，再通过流延工艺覆膜0.1-0.15mm厚度胶层，主要起到固定多个芯片2的作用，避免后续预切割工艺对芯片绑定所造成的损伤。\n\n[0035]其中多个芯片2通过固晶作业利用固晶胶固定在至少一灯板1上，固晶又称为DieBond或装片。固晶即通过固晶胶把晶片粘结在支架的指定区域，形成热通路或电通路，为后序的打线连接提供条件的工序。所述固晶胶包括导电胶和绝缘胶。具体的导电胶可以为银胶，绝缘胶可以为透明胶。于本发明实施例中，胶膜厚度为0.1-0.15毫米。\n\n[0036]回流焊工艺是指利用焊膏(由焊料和助焊剂混合而成的混合物)将一或多个电子元件连接到接触垫上之后，透过控制加温来熔化焊料以达到永久接合，可以用回焊炉、红外加热灯或热风枪等不同加温方式来进行焊接。于本发明实施例中，是将多个芯片2焊接在至少一灯板1上。\n\n[0037]流延工艺是一种塑料膜生产工艺，先经过挤出机把原料塑化熔融。通过T型结构成型模具挤出，呈片状流延至平稳旋转的冷却辊筒的辊面上，膜片在冷却辊筒上经冷却降温定型，再经牵引、切边后把制品收卷，这种成膜方法的膜坯为片状。流延膜的膜坯是在冷却辊筒上冷却定型。流延薄膜在挤出流延和冷却定型过程中，既无纵向拉伸，又无横向拉伸。用流延法成型的薄膜，厚度均匀，透明性好，热封性好。\n\n[0038]完成固定多个芯片2工序之后，对至少一灯板1的拼接边进行单边切割，切割方式为刀轮切割或激光切割，以保证切割精度有利于后续拼接工艺。\n\n[0039]步骤S30，将固定有所述多个芯片2的所述至少一灯板1设于一补强板3上，如图5所示。\n\n[0040]在本发明实施例中，将固定有多个芯片2的至少一灯板1在补强板3上进行拼接，拼接采用激光标记对位方式，以保证拼接缝的精度不大于50微米。至少一灯板1通过粘合剂固定在补强板3上。具体地，粘合剂包括但不限于双面胶。\n\n[0041]步骤S40，在所述至少一灯板和所述多个芯片上形成荧光膜，如图6所示。\n\n[0042]在本发明实施例中，荧光膜4通过膜压或流延工艺设于至少一灯板1和多个芯片2上。具体地，根据背光模组的尺寸大小进行工艺选择，于本发明实施例中优先选择膜压工艺，荧光膜4的厚度为0.15-0.4毫米，其组份包括荧光粉和光学透明胶，光学透明胶和荧光粉混合即形成荧光膜20。光学透明胶优选为光学透明胶(Optically CleaR Adhesive，简称OCA)。荧光膜4为整面覆膜方式成型，以保证拼接缝处荧光膜4与周边非拼接区的一致性。由于荧光膜4介质整面均匀性较好，因此可以保证芯片的出光在荧光膜4中均匀传导，特别在拼接缝处光线传导不受阻断，避免现有拼接方式中荧光膜4阻断造成的断面处出光的角度选择性问题。由于光线在整面荧光膜4内传导较为均匀，膜层表面不同位置各角度的出光较为均匀，从而避免了暗缝现象的存在。\n\n[0043]步骤S50，对所述背光模板进行加工处理，如图7所示。\n\n[0044]在本发明实施例中，加工处理包括对形成有荧光膜的所述背光模组进行烘烤；以及对所述背光模组进行切割处理。\n\n[0045]烘烤处理具体操作为，将背光模组放在烤箱中烘烤时间2-3小时，烘烤温度为高于120摄氏度。在本实施例中，选择150摄氏度，烘烤完成之后，使得两次覆膜胶层之间具有更好的粘接效果，从而避免脱胶现象的发生。\n\n[0046]切割处理具体操作为，将背光模组按照预先设定的切割位置切割四边，形成完整的迷你LED灯板背光模组。\n\n[0047]本发明实施例通过将灯板拼接于补强板上，并采用双面胶固定，然后对背光模组整体进行膜压或流延工艺，使miniLED的荧光膜形成整面结构，以避免光在荧光膜传播中的波导阻断，从而改善拼接暗线。\n\n[0048]以上对本发明实施例所提供的一种背光模组及其制备方法进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。', '技术领域\n\n[0001]本发明属于背光技术领域，尤其涉及一种背光模组及其制备方法。\n\n背景技术\n\n[0002]次毫米发光二极管(mini Light Emitting Diode，miniLED)作为一种直下式显示背光源，具有高亮、高对比、可实现区域调光显示、异形可弯曲、窄边框等诸多优势，成为人们关注的焦点。\n\n[0003]然而，由于鉴于成本及厚度方面的考量，miniLED使用在小尺寸显示屏上已无法满足市场对价格期待，利基性不强。而在中尺寸车载及电竞显示屏上，miniLED优势较为突出，可利用其来实现显示屏高亮度和高对比度的特性。但是，中尺寸miniLED样品由于受到目前机台大小的限制而多数无法实现整版的一次性成型，同时固晶机台在打件尺寸设计上也需要兼顾尺寸和量产效率，无法将固晶尺寸进行无限放大，这样会导致样品在背光模组成型时大多采用拼接的方式。如此，对于拼接背光而言，容易产生较为明显的拼接缝隙，并且在显示上会存在拼接暗线且不易消除，进而影响显示画质。\n\n[0004]因此需要对现有技术中的问题提出解决方法。\n\n发明内容\n\n[0005]本发明的目的在于，提供一种背光模组及其制备方法，通过将灯板拼接于补强板上，并采用双面胶固定，然后对背光模组整体进行膜压或流延工艺，使miniLED的荧光膜形成整面结构，以避免光在荧光膜传播中的波导阻断，从而改善拼接暗线。\n\n[0006]根据本发明的一方面，本发明实施例提供一种背光模组，其包括：补强板；至少一灯板，设于所述补强板上；多个芯片，设于所述至少一灯板上；以及荧光膜，覆盖于所述多个芯片及所述至少一灯板上。\n\n[0007]进一步地，所述至少一灯板是拼接板。\n\n[0008]根据本发明的另一方面，本发明提供一种背光模组的制备方法，其包括提供至少一灯板；将多个芯片固定于所述至少一灯板上；将固定有所述多个芯片的所述至少一灯板设于一补强板上；在所述至少一灯板和所述多个芯片上形成荧光膜；以及对所述背光模板进行加工处理。\n\n[0009]进一步地，所述多个芯片通过回流焊工艺及流延工艺以覆膜方式固定于所述至少一灯板上。\n\n[0010]进一步地，在所述将多个芯片固定于所述至少一灯板上的步骤中，还包括对所述至少一灯板进行切割。\n\n[0011]进一步地，所述切割为单边切割，所述切割的方式为刀轮切割或激光切割。\n\n[0012]进一步地，所述至少一灯板是拼接板，通过粘合剂拼接于所述补强板上。\n\n[0013]进一步地，所述粘合剂包括双面胶。\n\n[0014]进一步地，所述荧光膜通过膜压或流延工艺设于所述至少一灯板和所述多个芯片上。\n\n[0015]进一步地，所述加工处理包括：对形成有荧光膜的所述背光模组进行烘烤；以及对所述背光模组进行切割处理。\n\n[0016]本发明实施例通过将灯板拼接于补强板上，并采用双面胶固定，然后对背光模组整体进行膜压或流延工艺，使miniLED的荧光膜形成整面结构，以避免光在荧光膜传播中的波导阻断，从而改善拼接暗线。\n\n附图说明\n\n[0017]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其有益效果显而易见。\n\n[0018]图1是本发明实施例提供的背光模组的结构示意图。\n\n[0019]图2是本发明实施例提供的背光模组的制备方法的流程示意图。\n\n[0020]图3至图7是本发明实施例提供的背光模组的形成示意图。\n\n具体实施方式\n\n[0021]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0022]本发明的说明书和权利要求书以及上述附图中的术语“第一”、“第二”、“第三”等(如果存在)是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。应当理解，这样描述的对象在适当情况下可以互换。此外，术语“包括”和“具有”以及他们的任何变形，意图在于覆盖不排他的包含。\n\n[0023]在具体实施方式中，下文论述的附图以及用来描述本发明公开的原理的各实施例仅用于说明，而不应解释为限制本发明公开的范围。所属领域的技术人员将理解，本发明的原理可在任何适当布置的系统中实施。将详细说明示例性实施方式，在附图中示出了这些实施方式的实例。此外，将参考附图详细描述根据示例性实施例的终端。附图中的相同附图标号指代相同的元件。\n\n[0024]本具体实施方式中使用的术语仅用来描述特定实施方式，而并不意图显示本发明的概念。除非上下文中有明确不同的意义，否则，以单数形式使用的表达涵盖复数形式的表达。在本发明说明书中，应理解，诸如“包括”、“具有”以及“含有”等术语意图说明存在本发明说明书中揭示的特征、数字、步骤、动作或其组合的可能性，而并不意图排除可存在或可添加一个或多个其他特征、数字、步骤、动作或其组合的可能性。附图中的相同参考标号指代相同部分。\n\n[0025]如图1所示，本发明实施例提供一种背光模组，包括至少一灯板1、多个芯片2、补强板3以及荧光膜4。\n\n[0026]其中，至少一灯板1设于补强板3上。在本实施例中，至少一灯板1是拼接板，补强板3起支撑补强作用，使得至少一灯板1能够在补强板3上先完成拼接作业。至少一灯板1通过粘合剂固定在补强板3上。具体的，粘合剂包括但不限于双面胶。\n\n[0027]多个芯片2设于至少一灯板上1。其中多个芯片2通过固晶作业利用固晶胶固定在至少一灯板1上，所述固晶胶包括导电胶和绝缘胶。具体地，导电胶可以为银胶，绝缘胶可以为透明胶。胶膜厚度为0.1-0.15毫米，主要起到固定芯片的作用。\n\n[0028]其中，固晶又称为Die Bond或装片。固晶即通过固晶胶把晶片粘结在支架的指定区域，形成热通路或电通路，为后序的打线连接提供条件的工序。\n\n[0029]荧光膜4覆盖于多个芯片2及至少一灯板1上。荧光膜4的厚度为0.15-0.4毫米，其组份包括荧光粉和光学透明胶(Optically CleaR Adhesive，简称OCA)，光学透明胶和荧光粉混合即形成荧光膜片20。荧光膜4为整面覆膜方式成型，以保证拼接缝处荧光膜4与周边非拼接区的一致性。由于荧光膜4介质整面均匀性较好，因此保证多个芯片2的出光后在荧光膜4中均匀传导，特别在拼接缝处光线传导不受阻断，避免常规拼接方式中荧光膜4阻断造成的断面处出光的角度选择性问题。由于光线在整面荧光膜4内传导较为均匀，膜层表面不同位置各角度的出光较为均匀，从而避免了暗缝现象的存在。\n\n[0030]如图2所示，本发明实施例提供一种背光模组的制备方法，其包括以下步骤。\n\n[0031]步骤S10，提供至少一灯板1，如图3所示。\n\n[0032]在本发明实施例中，至少一灯板为拼接板。\n\n[0033]步骤S20，将多个芯片2固定于所述至少一灯板1上，如图4所示。\n\n[0034]在本发明实施例中，将多个芯片2在至少一灯板1上进行固晶作业，通过回流焊工艺后确保灯板整面点亮及亮度一致性，再通过流延工艺覆膜0.1-0.15mm厚度胶层，主要起到固定多个芯片2的作用，避免后续预切割工艺对芯片绑定所造成的损伤。\n\n[0035]其中多个芯片2通过固晶作业利用固晶胶固定在至少一灯板1上，固晶又称为DieBond或装片。固晶即通过固晶胶把晶片粘结在支架的指定区域，形成热通路或电通路，为后序的打线连接提供条件的工序。所述固晶胶包括导电胶和绝缘胶。具体的导电胶可以为银胶，绝缘胶可以为透明胶。于本发明实施例中，胶膜厚度为0.1-0.15毫米。\n\n[0036]回流焊工艺是指利用焊膏(由焊料和助焊剂混合而成的混合物)将一或多个电子元件连接到接触垫上之后，透过控制加温来熔化焊料以达到永久接合，可以用回焊炉、红外加热灯或热风枪等不同加温方式来进行焊接。于本发明实施例中，是将多个芯片2焊接在至少一灯板1上。\n\n[0037]流延工艺是一种塑料膜生产工艺，先经过挤出机把原料塑化熔融。通过T型结构成型模具挤出，呈片状流延至平稳旋转的冷却辊筒的辊面上，膜片在冷却辊筒上经冷却降温定型，再经牵引、切边后把制品收卷，这种成膜方法的膜坯为片状。流延膜的膜坯是在冷却辊筒上冷却定型。流延薄膜在挤出流延和冷却定型过程中，既无纵向拉伸，又无横向拉伸。用流延法成型的薄膜，厚度均匀，透明性好，热封性好。\n\n[0038]完成固定多个芯片2工序之后，对至少一灯板1的拼接边进行单边切割，切割方式为刀轮切割或激光切割，以保证切割精度有利于后续拼接工艺。\n\n[0039]步骤S30，将固定有所述多个芯片2的所述至少一灯板1设于一补强板3上，如图5所示。\n\n[0040]在本发明实施例中，将固定有多个芯片2的至少一灯板1在补强板3上进行拼接，拼接采用激光标记对位方式，以保证拼接缝的精度不大于50微米。至少一灯板1通过粘合剂固定在补强板3上。具体地，粘合剂包括但不限于双面胶。\n\n[0041]步骤S40，在所述至少一灯板和所述多个芯片上形成荧光膜，如图6所示。\n\n[0042]在本发明实施例中，荧光膜4通过膜压或流延工艺设于至少一灯板1和多个芯片2上。具体地，根据背光模组的尺寸大小进行工艺选择，于本发明实施例中优先选择膜压工艺，荧光膜4的厚度为0.15-0.4毫米，其组份包括荧光粉和光学透明胶，光学透明胶和荧光粉混合即形成荧光膜20。光学透明胶优选为光学透明胶(Optically CleaR Adhesive，简称OCA)。荧光膜4为整面覆膜方式成型，以保证拼接缝处荧光膜4与周边非拼接区的一致性。由于荧光膜4介质整面均匀性较好，因此可以保证芯片的出光在荧光膜4中均匀传导，特别在拼接缝处光线传导不受阻断，避免现有拼接方式中荧光膜4阻断造成的断面处出光的角度选择性问题。由于光线在整面荧光膜4内传导较为均匀，膜层表面不同位置各角度的出光较为均匀，从而避免了暗缝现象的存在。\n\n[0043]步骤S50，对所述背光模板进行加工处理，如图7所示。\n\n[0044]在本发明实施例中，加工处理包括对形成有荧光膜的所述背光模组进行烘烤；以及对所述背光模组进行切割处理。\n\n[0045]烘烤处理具体操作为，将背光模组放在烤箱中烘烤时间2-3小时，烘烤温度为高于120摄氏度。在本实施例中，选择150摄氏度，烘烤完成之后，使得两次覆膜胶层之间具有更好的粘接效果，从而避免脱胶现象的发生。\n\n[0046]切割处理具体操作为，将背光模组按照预先设定的切割位置切割四边，形成完整的迷你LED灯板背光模组。\n\n[0047]本发明实施例通过将灯板拼接于补强板上，并采用双面胶固定，然后对背光模组整体进行膜压或流延工艺，使miniLED的荧光膜形成整面结构，以避免光在荧光膜传播中的波导阻断，从而改善拼接暗线。\n\n[0048]以上对本发明实施例所提供的一种背光模组及其制备方法进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10690, 23744, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示面板。\n\n背景技术\n\n[0002]随着显示技术的高速发展，追求高的屏占比成为显示行业的主流，目前出现的屏下指纹、屏下摄像头等技术，均是为了实现触摸或者摄像功能的同时不影响显示。对于屏下摄像头处兼顾显示的全面屏设计方案，OLED(Organic Light-Emitting Diode，有机发光二极管)相对于LCD(liquid crystal display，液晶显示屏)具有天然的优势，但是OLED也受限于其像素结构，子像素无法做到更精细，因此会影响屏下摄像头处的整体透过率，最终影响摄像头成像质量。\n\n[0003]另外，手机显示屏在显示的时候，一般在顶部位置会长时间显示固定图标，比如时间、信号、以及消息通知等，再比如，在使用应用软件时，显示屏的顶部会显示固定抬头等。OLED显示屏是采用有机物发光，若长时间显示固定画面，存在烧机的缺陷，进而造成固定位置残影不良。\n\n发明内容\n\n[0004]本发明提供一种显示面板，能够解决现有的OLED显示面板由于OLED像素是采用有机物发光，长时间显示相同的画面易导致烧屏的风险，且OLED像素的透过率低会降低屏下摄像头处的采光效果，影响摄像头的成像质量，进而影响显示的技术问题。\n\n[0005]为解决上述问题，本发明提供的技术方案如下：\n\n[0006]本发明提供一种显示面板，所述显示面板上设置有第一显示区域和第二显示区域，所述显示面板包括第一阵列基板、多个OLED像素单元、以及多个Micro LED像素单元；多个所述OLED像素单元阵列设置于所述第一阵列基板上且设置于所述第一显示区域内；多个所述Micro LED像素单元阵列设置于所述第二显示区域内，所述Micro LED像素单元包括发光区和透光区。\n\n[0007]在本发明的至少一种实施例中，所述第二显示区域设置于所述第一显示区域的上方或下方。\n\n[0008]在本发明的至少一种实施例中，所述第一显示区域具有一开口，多个所述MicroLED像素单元在所述第一阵列基板上的正投影位于所述开口内。\n\n[0009]在本发明的至少一种实施例中，所述显示面板还包括设置于背离所述显示面板发光侧的光学电子元件，所述光学电子元件在所述第一阵列基板上的正投影位于所述开口内。\n\n[0010]在本发明的至少一种实施例中，多个所述Micro LED像素单元位于所述开口内。\n\n[0011]在本发明的至少一种实施例中，多个所述Micro LED像素单元设置于所述开口的上方或下方。\n\n[0012]在本发明的至少一种实施例中，所述显示面板还包括第二阵列基板，所述多个Micro LED像素单元设置于所述第二阵列基板上。\n\n[0013]在本发明的至少一种实施例中，所述第二阵列基板背离所述Micro LED像素单元的一侧设置有触控层。\n\n[0014]在本发明的至少一种实施例中，设置有所述OLED像素单元的所述第一阵列基板与设置有所述Micro LED像素单元的所述第二阵列基板之间设置有粘合层。\n\n[0015]在本发明的至少一种实施例中，在一个所述Micro LED像素单元中，所述透光区面积大于或等于所述发光区面积。\n\n[0016]本发明的有益效果为：通过将屏下摄像头对应区域的OLED像素替换为Micro LED像素，有利于摄像头采光，从而改善OLED屏下摄像头的成像质量，另外，将用于显示固定画面的OLED像素替换为Micro LED像素，能够改善长时间显示同一画面导致的易烧屏的问题。\n\n附图说明\n\n[0017]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0018]图1为本发明实施例的显示面板的结构示意图；\n\n[0019]图2为本发明实施例的第一显示区域和第二显示区域的结构示意图；\n\n[0020]图3为本发明实施例的Micro LED像素单元的俯视图；\n\n[0021]图4～图8为本发明其他实施例的结构示意图。\n\n具体实施方式\n\n[0022]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0023]本发明针对现有的显示面板，由于OLED显示面板的像素是采用有机物发光，长时间显示相同的画面易导致烧屏的风险，且OLED像素的透过率低会降低屏下摄像头处的采光效果，影响摄像头的成像质量，进入影响显示的技术问题，本实施例能够解决该缺陷。\n\n[0024]如图1和图2所示，本发明实施例提供一种显示面板100，所述显示面板100上设置有第一显示区域101和第二显示区域102，所述第一显示区域101内阵列设置有多个OLED像素单元，所述第二显示区域102内阵列设置有多个Micro LED(Micro Light-EmittingDiode，微型发光二极管)像素单元。\n\n[0025]现有技术通过将前置摄像头内置于显示屏幕中，从而实现屏占比的最大化，但对于OLED显示面板来说，受限于现有技术，子像素结构无法做到更精细，会影响屏下摄像头处的整体透过率，本实施例对与摄像头对应的OLED像素区域进行改进，将该处的OLED像素替换为Micro LED像素，从而解决屏下摄像头的采光问题。Micro LED相较于OLED，具有相似的主发光特性，且无机LED具有稳定性、效率高、寿命长、亮度高、尺寸小等优势，因此MicroLED像素可以小范围地替代OLED像素，与OLED像素结合共同实现更优的全面屏显示效果。\n\n[0026]如图2所示，图2中的A为第一显示区域101和第二显示区域102的俯视图，图2中的B、C、D分别为三种处于不同膜层的Micro LED像素的剖面示意图，本实施例以图2中的D进行说明。\n\n[0027]所述OLED像素单元20和所述Micro LED像素单元30设置于第一阵列基板10上，所述第一阵列基板10驱动所述OLED像素单元20和所述Micro LED像素单元30。\n\n[0028]所述第一阵列基板10包括基板和设置于所述基板上的薄膜晶体管阵列。\n\n[0029]所述显示面板包括光学电子元件70，所述光学电子元件70设置于背离所述显示面板100发光侧(即所述显示面板100的背面)，且与所述第二显示区域102对应设置，所述光学电子元件70在所述第一阵列基板10上的正投影位于所述开口21内。\n\n[0030]所述光学电子元件70可以为屏下摄像头、屏下光学指纹识别传感器、屏下光学面部识别传感器、光学屏下距离传感器等，但不限于此。\n\n[0031]所述第一显示区域101具有一开口21，所述多个Micro LED像素单元30设置于所述开口21内，所述开口与所述光学电子元件70对应设置，在所述显示面板100的厚度方向上，所述第二显示区域102对应于所述开口21设置，且所述第一显示区域101与所述第二显示区域102互补实现无缝对接，从而一起完成整个画面的显示。\n\n[0032]如图3所示，所述Micro LED像素单元30包括发光区31和透光区32，所述发光区31为设置Micro LED芯片区域，所述透光区32为透明显示区域。由于Micro LED芯片的面积较小，目前最小尺寸可实现大于1um的宽度，一般全高清的像素尺寸为25乘以65微米，所述Micro LED像素单元30的宽度为10～1000微米，因此Micro LED像素30能够保留较于OLED像素较大的开口率，能够预留出大片的空白区域用于摄像头等光学电子元件70进行采光。\n\n[0033]在所述Micro LED像素单元30打开时，所述第二显示区域102正常显示，在显示的任意时刻，可透过所述透光区32采集图像，进入所述显示面板100下方的光学电子元件70，从而实现屏下指纹识别、屏下摄像头、屏下面部识别、屏下距离感知等各种屏下传感设计。\n\n[0034]为了保证光学电子元件70足够的采光区域，所述Micro LED像素单元30中的所述透光区32的面积应大于或等于所述发光区31面积，即所述透光区31面积至少占所述MicroLED像素单元30面积的50％。\n\n[0035]所述Micro LED像素单元30包括R像素、G像素、B像素，也可通过蓝色Micro LED和颜色转换材料实现彩色发光，图1以一个所述Micro LED像素单元30进行示例性说明。\n\n[0036]所述OLED像素单元20包括R像素、G像素、B像素，在其他实施例中也可采取白光加颜色转换的发光方式，这里不做限制。\n\n[0037]所述显示面板100可为触控显示面板，触控层50设置于所述OLED像素单元20和所述Micro LED像素单元上，所述触控层50制备于一基板上，然后再将所述触控层50与设置有所述OLED像素单元20和所述Micro LED像素单元的第一阵列基板10进行贴合，所述触控层50通过粘合层40与所述第一阵列基板10贴合。所述粘合层40材料为OCA胶，将OCA胶形成于中的一块基板表面，再将其与另一块基板贴合。\n\n[0038]所述OLED像素单元20表面可覆盖有封装层(图中未示出)，用以隔绝水氧。\n\n[0039]所述触控层50上设置有偏光片60，所述偏光片60设置于所述显示面板100的最外层，避免外界光经过OLED像素的阴极金属，将光反射回来从而影响对比度。\n\n[0040]在本实施中，所述Micro LED像素单元30内置于所述OLED像素单元20上，在其他实施例中，所述Micro LED像素单元30可为外挂式，将Micro LED像素单元30设置于开口21的上方或下方，且应满足多个所述Micro LED像素单元30在所述第一阵列基板10上的正投影位于所述开口21内。\n\n[0041]请参照图2中的B与图4，在本实施例的基础上，可将所述第二显示区域102设置于所述第一显示区域101的上方，即将所述Micro LED像素单元30设置于靠近所述OLED像素单元20的发光侧。\n\n[0042]所述Micro LED像素单元30与所述触控层50可分别设置于同一基板的两相对侧，该基板为第二阵列基板80，所述第二阵列基板80用以驱动所述Micro LED像素单元30。\n\n[0043]具体地，可将多个Micro LED芯片阵列固定于所述第二阵列基板80的一侧表面从而形成多个Micro LED像素单元30，且该Micro LED芯片于所述开口21相对设置，所述触控层50设置于所述第二阵列基板80相对的另一侧表面，之后将所述第二阵列基板80的具有所述Micro LED像素单元30的一侧表面与所述第一阵列基板10的具有所述OLED像素单元20的一侧表面贴合，使得所述Micro LED像素单元30设置于所述触控层50与所述OLED像素单元20之间。\n\n[0044]如图5所示，在其他实施例中，可将所述第二阵列基板80的具有所述触控层50的一侧表面与所述第一阵列基板10的具有所述OLED像素单元20的一侧表面贴合，使得所述触控层50设置于所述Micro LED像素单元30与所述OLED像素单元20之间。\n\n[0045]请参照图2中的C和图6，在本实施例的基础上，可将所述第二显示区域102设置于所述第一显示区域101的下方，将所述Micro LED像素单元30设置于所述第一阵列基板10的背离所述OLED像素单元20的一侧，且与所述开口21对应设置，使得所述Micro LED像素单元30在所述第一阵列基板10上的正投影，位于所述开口21内。\n\n[0046]其中，所述Micro LED像素单元30设置于所述第二阵列基板80上，所述第一阵列基板10和所述第二阵列基板80分别驱动所述OLED像素单元20和所述Micro LED像素单元30。\n\n[0047]如图6所示，当所述Micro LED像素单元30设置于所述第二阵列基板80的远离所述第一阵列基板10的一侧表面时，所述第一阵列基板10和所述第二阵列基板80可共用同一张基板，所述第一阵列基板10和所述第二阵列基板80的薄膜晶体管阵列分别设置于该基板的两侧表面。\n\n[0048]当所述Micro LED像素单元30设置于所述第二阵列基板80的靠近所述第一阵列基板10的一侧表面时，所述第一阵列基板10与所述第二阵列基板80通过OCA胶贴合。\n\n[0049]如图7所示，在本实施例的基础上，所述第一显示区域101可不设置开口，所述第一显示区域101在所述第一阵列基板10上的正投影与所述显示面板100的整个显示区域重合，所述第二显示区域102设置于所述第一显示区域101的出光面的一侧(第一显示区域101的上方)，且所述第二显示区域102设置于所述显示面板100的用于长时间显示固定画面的区域，在长时间显示固定画面时，使用Micro LED代替OLED显示，改善OLED长时间点亮导致的烧屏问题。\n\n[0050]当第二显示区域102显示动态画面时，所述Micro LED像素单元30不进行显示，其下方覆盖区域的Micro LED像素单元30进行显示；当所述第二显示区域102显示固定画面时，如锁屏后显示时间、日期、以及应用程序打开时的抬头、logo时，所述Micro LED像素单元30进行显示，其下方覆盖区域的Micro LED像素单元30不进行显示。\n\n[0051]由于Micro LED像素单元30具有较高的穿透率，因此对于下方覆盖部分的所述Micro LED像素单元30的显示影响较小。\n\n[0052]如图8中的A’所示，可将所述第二显示区域102设置于所述显示面板100的上边框区域，将所述Micro LED像素单元30用于长时间固定显示时间、日期、应用程序的抬头、logo等。\n\n[0053]如图8中的C’、D’所示，除了将所述第二显示区域102设置于所述第一显示区域101的上方时，还可将所述第二显示区域102设置于所述第一显示区域101的下方，具体膜层结构可参照上述实施例，这里不再赘述。\n\n[0054]如图8中的B’所示，在其他实施例中，所述第二显示区域102和所述第一显示区域101可拼接显示，所述第二显示区域102和所述第一显示区域101在所述显示面板100的厚度方向上没有交叠面，且所述第一显示区域101和所述第二显示区域102在所述第一阵列基板10上的正投影之和与所述显示面板100的整个显示区域完全重合。由于所述第二显示区域102和所述第一显示区域101无缝衔接，因此在视觉上不会有任何显示中断及不连续边界的情况发生，进而可实现全面屏设计。\n\n[0055]另外，由于Micro LED具有高亮度、长寿命等特征，可采用所述第二显示区域102内的部分Micro LED像素单元30兼做补光灯和指示灯等功能。\n\n[0056]可以理解的是，所述第二显示区域102既可以设置在与所述光学电子元件70对应的区域，也可设置在需要长时间显示固定画面的区域，也可同时兼顾该两种设计，具体结构可根据实际需求来设计。\n\n[0057]有益效果：通过将屏下摄像头对应区域的OLED像素替换为Micro LED像素，有利于摄像头采光，从而改善OLED屏下摄像头的成像质量，另外，将用于显示固定画面的OLED像素替换为Micro LED像素，能够改善长时间显示同一画面导致的易烧屏的问题。\n\n[0058]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示面板。\n\n背景技术\n\n[0002]随着显示技术的高速发展，追求高的屏占比成为显示行业的主流，目前出现的屏下指纹、屏下摄像头等技术，均是为了实现触摸或者摄像功能的同时不影响显示。对于屏下摄像头处兼顾显示的全面屏设计方案，OLED(Organic Light-Emitting Diode，有机发光二极管)相对于LCD(liquid crystal display，液晶显示屏)具有天然的优势，但是OLED也受限于其像素结构，子像素无法做到更精细，因此会影响屏下摄像头处的整体透过率，最终影响摄像头成像质量。\n\n[0003]另外，手机显示屏在显示的时候，一般在顶部位置会长时间显示固定图标，比如时间、信号、以及消息通知等，再比如，在使用应用软件时，显示屏的顶部会显示固定抬头等。OLED显示屏是采用有机物发光，若长时间显示固定画面，存在烧机的缺陷，进而造成固定位置残影不良。\n\n发明内容\n\n[0004]本发明提供一种显示面板，能够解决现有的OLED显示面板由于OLED像素是采用有机物发光，长时间显示相同的画面易导致烧屏的风险，且OLED像素的透过率低会降低屏下摄像头处的采光效果，影响摄像头的成像质量，进而影响显示的技术问题。\n\n[0005]为解决上述问题，本发明提供的技术方案如下：\n\n[0006]本发明提供一种显示面板，所述显示面板上设置有第一显示区域和第二显示区域，所述显示面板包括第一阵列基板、多个OLED像素单元、以及多个Micro LED像素单元；多个所述OLED像素单元阵列设置于所述第一阵列基板上且设置于所述第一显示区域内；多个所述Micro LED像素单元阵列设置于所述第二显示区域内，所述Micro LED像素单元包括发光区和透光区。\n\n[0007]在本发明的至少一种实施例中，所述第二显示区域设置于所述第一显示区域的上方或下方。\n\n[0008]在本发明的至少一种实施例中，所述第一显示区域具有一开口，多个所述MicroLED像素单元在所述第一阵列基板上的正投影位于所述开口内。\n\n[0009]在本发明的至少一种实施例中，所述显示面板还包括设置于背离所述显示面板发光侧的光学电子元件，所述光学电子元件在所述第一阵列基板上的正投影位于所述开口内。\n\n[0010]在本发明的至少一种实施例中，多个所述Micro LED像素单元位于所述开口内。\n\n[0011]在本发明的至少一种实施例中，多个所述Micro LED像素单元设置于所述开口的上方或下方。\n\n[0012]在本发明的至少一种实施例中，所述显示面板还包括第二阵列基板，所述多个Micro LED像素单元设置于所述第二阵列基板上。\n\n[0013]在本发明的至少一种实施例中，所述第二阵列基板背离所述Micro LED像素单元的一侧设置有触控层。\n\n[0014]在本发明的至少一种实施例中，设置有所述OLED像素单元的所述第一阵列基板与设置有所述Micro LED像素单元的所述第二阵列基板之间设置有粘合层。\n\n[0015]在本发明的至少一种实施例中，在一个所述Micro LED像素单元中，所述透光区面积大于或等于所述发光区面积。\n\n[0016]本发明的有益效果为：通过将屏下摄像头对应区域的OLED像素替换为Micro LED像素，有利于摄像头采光，从而改善OLED屏下摄像头的成像质量，另外，将用于显示固定画面的OLED像素替换为Micro LED像素，能够改善长时间显示同一画面导致的易烧屏的问题。\n\n附图说明\n\n[0017]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0018]图1为本发明实施例的显示面板的结构示意图；\n\n[0019]图2为本发明实施例的第一显示区域和第二显示区域的结构示意图；\n\n[0020]图3为本发明实施例的Micro LED像素单元的俯视图；\n\n[0021]图4～图8为本发明其他实施例的结构示意图。\n\n具体实施方式\n\n[0022]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0023]本发明针对现有的显示面板，由于OLED显示面板的像素是采用有机物发光，长时间显示相同的画面易导致烧屏的风险，且OLED像素的透过率低会降低屏下摄像头处的采光效果，影响摄像头的成像质量，进入影响显示的技术问题，本实施例能够解决该缺陷。\n\n[0024]如图1和图2所示，本发明实施例提供一种显示面板100，所述显示面板100上设置有第一显示区域101和第二显示区域102，所述第一显示区域101内阵列设置有多个OLED像素单元，所述第二显示区域102内阵列设置有多个Micro LED(Micro Light-EmittingDiode，微型发光二极管)像素单元。\n\n[0025]现有技术通过将前置摄像头内置于显示屏幕中，从而实现屏占比的最大化，但对于OLED显示面板来说，受限于现有技术，子像素结构无法做到更精细，会影响屏下摄像头处的整体透过率，本实施例对与摄像头对应的OLED像素区域进行改进，将该处的OLED像素替换为Micro LED像素，从而解决屏下摄像头的采光问题。Micro LED相较于OLED，具有相似的主发光特性，且无机LED具有稳定性、效率高、寿命长、亮度高、尺寸小等优势，因此MicroLED像素可以小范围地替代OLED像素，与OLED像素结合共同实现更优的全面屏显示效果。\n\n[0026]如图2所示，图2中的A为第一显示区域101和第二显示区域102的俯视图，图2中的B、C、D分别为三种处于不同膜层的Micro LED像素的剖面示意图，本实施例以图2中的D进行说明。\n\n[0027]所述OLED像素单元20和所述Micro LED像素单元30设置于第一阵列基板10上，所述第一阵列基板10驱动所述OLED像素单元20和所述Micro LED像素单元30。\n\n[0028]所述第一阵列基板10包括基板和设置于所述基板上的薄膜晶体管阵列。\n\n[0029]所述显示面板包括光学电子元件70，所述光学电子元件70设置于背离所述显示面板100发光侧(即所述显示面板100的背面)，且与所述第二显示区域102对应设置，所述光学电子元件70在所述第一阵列基板10上的正投影位于所述开口21内。\n\n[0030]所述光学电子元件70可以为屏下摄像头、屏下光学指纹识别传感器、屏下光学面部识别传感器、光学屏下距离传感器等，但不限于此。\n\n[0031]所述第一显示区域101具有一开口21，所述多个Micro LED像素单元30设置于所述开口21内，所述开口与所述光学电子元件70对应设置，在所述显示面板100的厚度方向上，所述第二显示区域102对应于所述开口21设置，且所述第一显示区域101与所述第二显示区域102互补实现无缝对接，从而一起完成整个画面的显示。\n\n[0032]如图3所示，所述Micro LED像素单元30包括发光区31和透光区32，所述发光区31为设置Micro LED芯片区域，所述透光区32为透明显示区域。由于Micro LED芯片的面积较小，目前最小尺寸可实现大于1um的宽度，一般全高清的像素尺寸为25乘以65微米，所述Micro LED像素单元30的宽度为10～1000微米，因此Micro LED像素30能够保留较于OLED像素较大的开口率，能够预留出大片的空白区域用于摄像头等光学电子元件70进行采光。\n\n[0033]在所述Micro LED像素单元30打开时，所述第二显示区域102正常显示，在显示的任意时刻，可透过所述透光区32采集图像，进入所述显示面板100下方的光学电子元件70，从而实现屏下指纹识别、屏下摄像头、屏下面部识别、屏下距离感知等各种屏下传感设计。\n\n[0034]为了保证光学电子元件70足够的采光区域，所述Micro LED像素单元30中的所述透光区32的面积应大于或等于所述发光区31面积，即所述透光区31面积至少占所述MicroLED像素单元30面积的50％。\n\n[0035]所述Micro LED像素单元30包括R像素、G像素、B像素，也可通过蓝色Micro LED和颜色转换材料实现彩色发光，图1以一个所述Micro LED像素单元30进行示例性说明。\n\n[0036]所述OLED像素单元20包括R像素、G像素、B像素，在其他实施例中也可采取白光加颜色转换的发光方式，这里不做限制。\n\n[0037]所述显示面板100可为触控显示面板，触控层50设置于所述OLED像素单元20和所述Micro LED像素单元上，所述触控层50制备于一基板上，然后再将所述触控层50与设置有所述OLED像素单元20和所述Micro LED像素单元的第一阵列基板10进行贴合，所述触控层50通过粘合层40与所述第一阵列基板10贴合。所述粘合层40材料为OCA胶，将OCA胶形成于中的一块基板表面，再将其与另一块基板贴合。\n\n[0038]所述OLED像素单元20表面可覆盖有封装层(图中未示出)，用以隔绝水氧。\n\n[0039]所述触控层50上设置有偏光片60，所述偏光片60设置于所述显示面板100的最外层，避免外界光经过OLED像素的阴极金属，将光反射回来从而影响对比度。\n\n[0040]在本实施中，所述Micro LED像素单元30内置于所述OLED像素单元20上，在其他实施例中，所述Micro LED像素单元30可为外挂式，将Micro LED像素单元30设置于开口21的上方或下方，且应满足多个所述Micro LED像素单元30在所述第一阵列基板10上的正投影位于所述开口21内。\n\n[0041]请参照图2中的B与图4，在本实施例的基础上，可将所述第二显示区域102设置于所述第一显示区域101的上方，即将所述Micro LED像素单元30设置于靠近所述OLED像素单元20的发光侧。\n\n[0042]所述Micro LED像素单元30与所述触控层50可分别设置于同一基板的两相对侧，该基板为第二阵列基板80，所述第二阵列基板80用以驱动所述Micro LED像素单元30。\n\n[0043]具体地，可将多个Micro LED芯片阵列固定于所述第二阵列基板80的一侧表面从而形成多个Micro LED像素单元30，且该Micro LED芯片于所述开口21相对设置，所述触控层50设置于所述第二阵列基板80相对的另一侧表面，之后将所述第二阵列基板80的具有所述Micro LED像素单元30的一侧表面与所述第一阵列基板10的具有所述OLED像素单元20的一侧表面贴合，使得所述Micro LED像素单元30设置于所述触控层50与所述OLED像素单元20之间。\n\n[0044]如图5所示，在其他实施例中，可将所述第二阵列基板80的具有所述触控层50的一侧表面与所述第一阵列基板10的具有所述OLED像素单元20的一侧表面贴合，使得所述触控层50设置于所述Micro LED像素单元30与所述OLED像素单元20之间。\n\n[0045]请参照图2中的C和图6，在本实施例的基础上，可将所述第二显示区域102设置于所述第一显示区域101的下方，将所述Micro LED像素单元30设置于所述第一阵列基板10的背离所述OLED像素单元20的一侧，且与所述开口21对应设置，使得所述Micro LED像素单元30在所述第一阵列基板10上的正投影，位于所述开口21内。\n\n[0046]其中，所述Micro LED像素单元30设置于所述第二阵列基板80上，所述第一阵列基板10和所述第二阵列基板80分别驱动所述OLED像素单元20和所述Micro LED像素单元30。\n\n[0047]如图6所示，当所述Micro LED像素单元30设置于所述第二阵列基板80的远离所述第一阵列基板10的一侧表面时，所述第一阵列基板10和所述第二阵列基板80可共用同一张基板，所述第一阵列基板10和所述第二阵列基板80的薄膜晶体管阵列分别设置于该基板的两侧表面。\n\n[0048]当所述Micro LED像素单元30设置于所述第二阵列基板80的靠近所述第一阵列基板10的一侧表面时，所述第一阵列基板10与所述第二阵列基板80通过OCA胶贴合。\n\n[0049]如图7所示，在本实施例的基础上，所述第一显示区域101可不设置开口，所述第一显示区域101在所述第一阵列基板10上的正投影与所述显示面板100的整个显示区域重合，所述第二显示区域102设置于所述第一显示区域101的出光面的一侧(第一显示区域101的上方)，且所述第二显示区域102设置于所述显示面板100的用于长时间显示固定画面的区域，在长时间显示固定画面时，使用Micro LED代替OLED显示，改善OLED长时间点亮导致的烧屏问题。\n\n[0050]当第二显示区域102显示动态画面时，所述Micro LED像素单元30不进行显示，其下方覆盖区域的Micro LED像素单元30进行显示；当所述第二显示区域102显示固定画面时，如锁屏后显示时间、日期、以及应用程序打开时的抬头、logo时，所述Micro LED像素单元30进行显示，其下方覆盖区域的Micro LED像素单元30不进行显示。\n\n[0051]由于Micro LED像素单元30具有较高的穿透率，因此对于下方覆盖部分的所述Micro LED像素单元30的显示影响较小。\n\n[0052]如图8中的A’所示，可将所述第二显示区域102设置于所述显示面板100的上边框区域，将所述Micro LED像素单元30用于长时间固定显示时间、日期、应用程序的抬头、logo等。\n\n[0053]如图8中的C’、D’所示，除了将所述第二显示区域102设置于所述第一显示区域101的上方时，还可将所述第二显示区域102设置于所述第一显示区域101的下方，具体膜层结构可参照上述实施例，这里不再赘述。\n\n[0054]如图8中的B’所示，在其他实施例中，所述第二显示区域102和所述第一显示区域101可拼接显示，所述第二显示区域102和所述第一显示区域101在所述显示面板100的厚度方向上没有交叠面，且所述第一显示区域101和所述第二显示区域102在所述第一阵列基板10上的正投影之和与所述显示面板100的整个显示区域完全重合。由于所述第二显示区域102和所述第一显示区域101无缝衔接，因此在视觉上不会有任何显示中断及不连续边界的情况发生，进而可实现全面屏设计。\n\n[0055]另外，由于Micro LED具有高亮度、长寿命等特征，可采用所述第二显示区域102内的部分Micro LED像素单元30兼做补光灯和指示灯等功能。\n\n[0056]可以理解的是，所述第二显示区域102既可以设置在与所述光学电子元件70对应的区域，也可设置在需要长时间显示固定画面的区域，也可同时兼顾该两种设计，具体结构可根据实际需求来设计。\n\n[0057]有益效果：通过将屏下摄像头对应区域的OLED像素替换为Micro LED像素，有利于摄像头采光，从而改善OLED屏下摄像头的成像质量，另外，将用于显示固定画面的OLED像素替换为Micro LED像素，能够改善长时间显示同一画面导致的易烧屏的问题。\n\n[0058]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10691, 23745, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示装置及其驱动方法。\n\n背景技术\n\n[0002]随着手机全面屏的普及和消费者对机身一体化的追求，屏下传感技术成为业界开发重点。传统的LCD因属于整面背光的被动发光，光学传感器与光学显示无法在空间上重合。显示单元上与光学传感器对应的区域无法显示，从而导致视觉割裂，影响用户使用体验。\n\n发明内容\n\n[0003]本发明提供一种显示装置，以解决现有的显示单元中，显示单元上与光学传感器对应的区域无法显示，从而导致视觉割裂，影响用户使用体验的技术问题。\n\n[0004]为解决上述问题，本发明提供的技术方案如下：\n\n[0005]一种显示装置，其包括显示单元和用于驱动显示单元显示的驱动模块；\n\n[0006]其中，所述显示单元包括主显示区和至少一个显示透光区，所述主显示区中设置有多个第一子像素，所述显示透光区中设置有多个第二子像素；每个所述第二子像素均包括至少一个微型发光二极管。\n\n[0007]进一步的，所述驱动模块包括图像数据输出单元、图像数据分配单元以及驱动控制单元；\n\n[0008]其中，所述图像数据输出单元用于将与需要显示的图像信息对应的图像数据传输给图像数据分配单元；\n\n[0009]所述图像数据分配单元用于将接收到的图像数据划分为与主显示区对应的第一图像数据和与显示透光区对应的第二图像数据，并将第一图像数据和第二图像数据传输给驱动控制单元；\n\n[0010]所述驱动控制单元用于根据接收的第一图像数据和第二图像数据控制第一子像素和第二子像素同步点亮。\n\n[0011]进一步的，所述图像数据输出单元包括：\n\n[0012]图像输出单元，其用于向信号读取单元输出需要显示的图像信息；\n\n[0013]信号读取单元，其用于获取需要显示的图像信息，并将与图像信息对应的图像数据传输给图像数据分配单元。\n\n[0014]进一步的，所述主显示区的像素分辨率与所述第一图像数据中的图像分辨率匹配，第一图像数据中的图像点的地址与所述第一子像素的地址一一对应。\n\n[0015]进一步的，所述驱动控制单元包括：\n\n[0016]时序控制单元，其用于根据接收的第一图像数据和第二图像数据，并传输控制信号给所述GOA驱动单元；\n\n[0017]GOA驱动单元，其用于根据接收到的控制信号控制第一子像素和第二子像素同步点亮。\n\n[0018]进一步的，所述主显示区的像素密度大于所述显示透光区的像素密度。\n\n[0019]进一步的，所述显示装置还包括与所述显示透光区对应设置的功能器件，所述功能器件包括指纹识别单元、摄像头、结构光传感器、飞行时间传感器、距离传感器和光线传感器中的至少一种。\n\n[0020]本发明还提供一种显示装置的驱动方法，包括以下步骤：\n\n[0021]S10、图像数据输出单元将与需要显示的图像信息对应的图像数据传输给图像数据分配单元；\n\n[0022]S20、图像数据分配单元将接收到的图像数据划分为与主显示区对应的第一图像数据和与显示透光区对应的第二图像数据，并将第一图像数据和第二图像数据传输给驱动控制单元；\n\n[0023]S30、驱动控制单元用于根据接收的第一图像数据和第二图像数据控制第一子像素和第二子像素同步点亮。\n\n[0024]进一步的，所述步骤S10包括：\n\n[0025]S11、图像输出单元向信号读取单元输出需要显示的图像信息；\n\n[0026]S12、信号读取单元获取需要显示的图像信息，并将与图像信息对应的图像数据传输给图像数据分配单元。\n\n[0027]进一步的，所述步骤S20包括：\n\n[0028]S21、图像数据分配单元获取第一子像素的地址和第二子像素的绝对地址；\n\n[0029]S22、图像数据分配单元将接收到的图像数据中地址与第一子像素的地址一一对应的图像点的数据划分为第一图像数据，将接收到的图像数据中地址与第二子像素的绝对地址对应的图像点的数据划分为第二图像数据；\n\n[0030]S23、将第一图像数据和第二图像数据传输给驱动控制单元。\n\n[0031]本发明的有益效果为：通过在显示透光区处设置微型发光二极管做透明显示，保证显示透光区的透光率，防止对摄像头等功能器件的采光造成影响的同时，显示透光区也可以用于显示画面，从而使显示单元实现全屏显示，提高用户使用体验。在需要显示画面的时，在驱动模块中各模块的共同作用下，实现主显示区的图像和显示透光区的图像的无缝衔接和同步显示，提高巨量子像素转印时的先天制程良率，降低成本，同时解决传统液晶显示屏中与光学传感器对应的区域无法显示导致的视觉割裂问题。\n\n附图说明\n\n[0032]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0033]图1为本发明一实施方式中显示装置的结构示意图；\n\n[0034]图2为本发明一实施方式中第一子像素和第二子像素的分布示意图；\n\n[0035]图3为本发明组成驱动模块的各单元的示意图；\n\n[0036]图4为本发明另一实施方式中显示装置的结构示意图；\n\n[0037]图5至图11为本发明中显示透光区位于不同位置和呈不同形状时的示意图；\n\n[0038]图12为本发明中显示装置的驱动流程示意图。\n\n[0039]附图标记：\n\n[0040]10、显示单元；11、主显示区；12、显示透光区；13、第一子像素；14、第二子像素；15、阵列基板；16、彩膜基板；17、液晶层；18、上偏光片；19、下偏光片；20、驱动模块；21、图像输出单元；22、信号读取单元；23、图像数据分配单元；24、时序控制单元；25、GOA驱动单元；30、功能器件；40、背光模块；41、光源块；42、第一通孔。\n\n具体实施方式\n\n[0041]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0042]本发明针对现有的显示单元中，显示单元上与光学传感器对应的区域无法显示，从而导致视觉割裂，影响用户使用体验。本发明可以解决上述问题。\n\n[0043]一种显示装置，如图1至图3所示，所述显示装置包括显示单元10、功能器件30以及用于驱动显示单元10显示的驱动模块20。\n\n[0044]具体的，显示单元10可以为液晶显示单元；所述显示单元10包括主显示区11和至少一个显示透光区12，所述主显示区11中设置有多个第一子像素13，所述显示透光区12中设置有多个第二子像素14；每个所述第二子像素14均包括至少一个微型发光二极管。\n\n[0045]需要说明的是，对于本领域技术人员可知，微型发光二极管具有超高亮度、高对比度、响应时间快以及透明度高等特点，通过在显示透光区12处设置微型发光二极管做透明显示，保证显示透光区12的透光率，防止对摄像头等功能器件30的采光造成影响的同时，显示透光区12也可以用于显示画面，从而使显示单元10实现全屏显示，提高用户使用体验。\n\n[0046]其中，显示透光区12可以设置一个或多个，所述显示透光区12的面积小于或等于100平方毫米。\n\n[0047]其中，所述主显示区11的像素密度大于所述显示透光区12的像素密度，从而可以保证显示透光区12处的转印良率与成本控制。\n\n[0048]需要说明的是，主显示区11的像素密度大于或等于400，显示透光区12的像素密度小于或等于200。\n\n[0049]具体的，所述功能器件30与所述显示透光区12对应设置，所述功能器件30包括指纹识别单元、摄像头、结构光传感器、飞行时间传感器、距离传感器和光线传感器中的至少一种。\n\n[0050]需要说明的是，实际实施中，可依据显示透光区12的面积大小，在显示透光区12处兼做补光灯、呼吸灯、时间显示等功能。\n\n[0051]具体的，如图3所示，所述驱动模块20包括图像数据输出单元、图像数据分配单元23以及驱动控制单元。\n\n[0052]其中，所述图像数据输出单元用于将与需要显示的图像信息对应的图像数据传输给图像数据分配单元23；所述图像数据分配单元23用于将接收到的图像数据划分为与主显示区11对应的第一图像数据和与显示透光区12对应的第二图像数据，并将第一图像数据和第二图像数据传输给驱动控制单元；所述驱动控制单元用于根据接收的第一图像数据和第二图像数据控制第一子像素13和第二子像素14同步点亮。\n\n[0053]在需要显示画面时，在驱动模块20中各模块的共同作用下，实现主显示区11的图像和显示透光区12的图像的无缝衔接和同步显示，从而解决传统液晶显示屏中与光学传感器对应的区域无法显示导致的视觉割裂问题。\n\n[0054]需要说明的是，图像数据与子像素的像素值对应，第一图像数据与第一子像素13的像素值对应，第二图像数据与第二子像素14的像素值对应。\n\n[0055]具体的，所述图像数据输出单元包括图像输出单元21和信号读取单元22。\n\n[0056]其中，所述图像输出单元21用于向信号读取单元22输出需要显示的图像信息；所述信号读取单元22用于获取需要显示的图像信息，并将与图像信息对应的图像数据传输给图像数据分配单元23。\n\n[0057]其中，所述主显示区11的像素分辨率与所述第一图像数据中的图像分辨率匹配，第一图像数据中的图像点的地址与所述第一子像素13的地址一一对应；所述第二图像数据中的图像点的地址与第二子像素14的绝对地址对应。\n\n[0058]具体的，所述驱动控制单元包括时序控制单元24和GOA驱动单元25。\n\n[0059]其中，时序控制单元24，用于根据接收的第一图像数据和第二图像数据，并传输控制信号给所述GOA驱动单元25；GOA驱动单元25用于根据接收到的控制信号控制第一子像素13和第二子像素14同步点亮。\n\n[0060]具体的，如图4所示，在一实施方式中，所述显示装置还包括背光模块40，所述显示单元10设置于所述背光模块40上。\n\n[0061]其中，所示显示单元10包括相对设置的阵列基板15和彩膜基板16，以及设置于所述阵列基板15和所述彩膜基板16之间的液晶层17、位于所述彩膜基板16上远离所述液晶层17的一侧的上偏光片18，以及位于所述阵列基板15上远离所述液晶层17的一侧上的下偏光片19。\n\n[0062]其中，所述背光模块40上设置有与所述显示透光区12对应的第一通孔42，所述功能器件30与所述第一通孔42对应设置。\n\n[0063]功能器件30打开时，位于显示透光区12的第二子像素14中的微型发光二极管关闭，此时主显示区11正常显示，显示透光区12呈透明状态，通过显示透光区12和第一通孔42为所述功能器件30提供采光通道；功能器件30关闭时，第二子像素14中的微型发光二极管打开，为显示透光区12提供光源，此时主显示区11和显示透光区12共同用于显示。\n\n[0064]在一实施方式中，所述第二子像素14中的微型发光二极管可以设置于所述阵列基板15的表面或层结构中，以为所述显示透光区12提供照明。\n\n[0065]需要说明的是，所述第二子像素14中的微型发光二极管还可以设置于所述彩膜基板16的表面或层结构中。\n\n[0066]具体的，所述背光模块40还包括为所述主显示区11提供光源的光源块41，光源块41可以为侧入式光源，光源块41包括至少一个LED灯。\n\n[0067]需要说明的是，也可以通过其他方式为主显示区11提供光源，例如每个所述第一子像素13也可以包括至少一个微型发光二极管，微型发光二极管设置于背光模块40上，主显示区11通过微型发光二极管提供光源。\n\n[0068]参见图5至图11，所述显示透光区12可以位于显示单元10上的任意位置，所述显示透光区12的形状也可以为任意形状，例如，挖孔(如图5和图6)、水滴状(如图7)、美人尖状(如图8)、刘海状(如图9)或开槽(如图10和图11)。\n\n[0069]需要说明的是，所述显示透光区12与所述主显示区11无缝衔接，因而在视觉上没有任何显示中断及不连续边界(如凹口、挖孔等)，可以实现实现完全的全面屏设计。\n\n[0070]基于上述显示装置，本发明还提供一种显示装置的驱动方法，如图12所示，包括以下步骤：\n\n[0071]S10、图像数据输出单元将与需要显示的图像信息对应的图像数据传输给图像数据分配单元23；\n\n[0072]S20、图像数据分配单元23将接收到的图像数据划分为与主显示区11对应的第一图像数据和与显示透光区12对应的第二图像数据，并将第一图像数据和第二图像数据传输给驱动控制单元；\n\n[0073]S30、驱动控制单元用于根据接收的第一图像数据和第二图像数据控制第一子像素13和第二子像素14同步点亮。\n\n[0074]具体的，所述步骤S10包括：\n\n[0075]S11、图像输出单元21向信号读取单元22输出需要显示的图像信息；\n\n[0076]S12、信号读取单元22获取需要显示的图像信息，并将与图像信息对应的图像数据传输给图像数据分配单元23。\n\n[0077]具体的，所述步骤S20包括：\n\n[0078]S21、图像数据分配单元23获取第一子像素13的地址和第二子像素14的绝对地址；\n\n[0079]S22、图像数据分配单元23将接收到的图像数据中地址与第一子像素13的地址一一对应的图像点的数据划分为第一图像数据，将接收到的图像数据中地址与第二子像素14的绝对地址对应的图像点的数据划分为第二图像数据；\n\n[0080]S23、将第一图像数据和第二图像数据传输给驱动控制单元。\n\n[0081]需要说明的是，所述步骤S22中，图像数据分配单元23接收到的图像数据中地址与第二子像素14的绝对地址距离最近的图像点即为与第二子像素14对应的图像点。\n\n[0082]本发明的有益效果为：通过在显示透光区12处设置微型发光二极管做透明显示，保证显示透光区12的透光率，防止对摄像头等功能器件30的采光造成影响的同时，显示透光区12也可以用于显示画面，从而使显示单元10实现全屏显示，提高用户使用体验。在需要显示画面的时，在驱动模块20中各模块的共同作用下，实现主显示区11的图像和显示透光区12的图像的无缝衔接和同步显示，提高巨量子像素转印时的先天制程良率，降低成本，同时解决传统液晶显示屏中与光学传感器对应的区域无法显示导致的视觉割裂问题。\n\n[0083]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示装置及其驱动方法。\n\n背景技术\n\n[0002]随着手机全面屏的普及和消费者对机身一体化的追求，屏下传感技术成为业界开发重点。传统的LCD因属于整面背光的被动发光，光学传感器与光学显示无法在空间上重合。显示单元上与光学传感器对应的区域无法显示，从而导致视觉割裂，影响用户使用体验。\n\n发明内容\n\n[0003]本发明提供一种显示装置，以解决现有的显示单元中，显示单元上与光学传感器对应的区域无法显示，从而导致视觉割裂，影响用户使用体验的技术问题。\n\n[0004]为解决上述问题，本发明提供的技术方案如下：\n\n[0005]一种显示装置，其包括显示单元和用于驱动显示单元显示的驱动模块；\n\n[0006]其中，所述显示单元包括主显示区和至少一个显示透光区，所述主显示区中设置有多个第一子像素，所述显示透光区中设置有多个第二子像素；每个所述第二子像素均包括至少一个微型发光二极管。\n\n[0007]进一步的，所述驱动模块包括图像数据输出单元、图像数据分配单元以及驱动控制单元；\n\n[0008]其中，所述图像数据输出单元用于将与需要显示的图像信息对应的图像数据传输给图像数据分配单元；\n\n[0009]所述图像数据分配单元用于将接收到的图像数据划分为与主显示区对应的第一图像数据和与显示透光区对应的第二图像数据，并将第一图像数据和第二图像数据传输给驱动控制单元；\n\n[0010]所述驱动控制单元用于根据接收的第一图像数据和第二图像数据控制第一子像素和第二子像素同步点亮。\n\n[0011]进一步的，所述图像数据输出单元包括：\n\n[0012]图像输出单元，其用于向信号读取单元输出需要显示的图像信息；\n\n[0013]信号读取单元，其用于获取需要显示的图像信息，并将与图像信息对应的图像数据传输给图像数据分配单元。\n\n[0014]进一步的，所述主显示区的像素分辨率与所述第一图像数据中的图像分辨率匹配，第一图像数据中的图像点的地址与所述第一子像素的地址一一对应。\n\n[0015]进一步的，所述驱动控制单元包括：\n\n[0016]时序控制单元，其用于根据接收的第一图像数据和第二图像数据，并传输控制信号给所述GOA驱动单元；\n\n[0017]GOA驱动单元，其用于根据接收到的控制信号控制第一子像素和第二子像素同步点亮。\n\n[0018]进一步的，所述主显示区的像素密度大于所述显示透光区的像素密度。\n\n[0019]进一步的，所述显示装置还包括与所述显示透光区对应设置的功能器件，所述功能器件包括指纹识别单元、摄像头、结构光传感器、飞行时间传感器、距离传感器和光线传感器中的至少一种。\n\n[0020]本发明还提供一种显示装置的驱动方法，包括以下步骤：\n\n[0021]S10、图像数据输出单元将与需要显示的图像信息对应的图像数据传输给图像数据分配单元；\n\n[0022]S20、图像数据分配单元将接收到的图像数据划分为与主显示区对应的第一图像数据和与显示透光区对应的第二图像数据，并将第一图像数据和第二图像数据传输给驱动控制单元；\n\n[0023]S30、驱动控制单元用于根据接收的第一图像数据和第二图像数据控制第一子像素和第二子像素同步点亮。\n\n[0024]进一步的，所述步骤S10包括：\n\n[0025]S11、图像输出单元向信号读取单元输出需要显示的图像信息；\n\n[0026]S12、信号读取单元获取需要显示的图像信息，并将与图像信息对应的图像数据传输给图像数据分配单元。\n\n[0027]进一步的，所述步骤S20包括：\n\n[0028]S21、图像数据分配单元获取第一子像素的地址和第二子像素的绝对地址；\n\n[0029]S22、图像数据分配单元将接收到的图像数据中地址与第一子像素的地址一一对应的图像点的数据划分为第一图像数据，将接收到的图像数据中地址与第二子像素的绝对地址对应的图像点的数据划分为第二图像数据；\n\n[0030]S23、将第一图像数据和第二图像数据传输给驱动控制单元。\n\n[0031]本发明的有益效果为：通过在显示透光区处设置微型发光二极管做透明显示，保证显示透光区的透光率，防止对摄像头等功能器件的采光造成影响的同时，显示透光区也可以用于显示画面，从而使显示单元实现全屏显示，提高用户使用体验。在需要显示画面的时，在驱动模块中各模块的共同作用下，实现主显示区的图像和显示透光区的图像的无缝衔接和同步显示，提高巨量子像素转印时的先天制程良率，降低成本，同时解决传统液晶显示屏中与光学传感器对应的区域无法显示导致的视觉割裂问题。\n\n附图说明\n\n[0032]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0033]图1为本发明一实施方式中显示装置的结构示意图；\n\n[0034]图2为本发明一实施方式中第一子像素和第二子像素的分布示意图；\n\n[0035]图3为本发明组成驱动模块的各单元的示意图；\n\n[0036]图4为本发明另一实施方式中显示装置的结构示意图；\n\n[0037]图5至图11为本发明中显示透光区位于不同位置和呈不同形状时的示意图；\n\n[0038]图12为本发明中显示装置的驱动流程示意图。\n\n[0039]附图标记：\n\n[0040]10、显示单元；11、主显示区；12、显示透光区；13、第一子像素；14、第二子像素；15、阵列基板；16、彩膜基板；17、液晶层；18、上偏光片；19、下偏光片；20、驱动模块；21、图像输出单元；22、信号读取单元；23、图像数据分配单元；24、时序控制单元；25、GOA驱动单元；30、功能器件；40、背光模块；41、光源块；42、第一通孔。\n\n具体实施方式\n\n[0041]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0042]本发明针对现有的显示单元中，显示单元上与光学传感器对应的区域无法显示，从而导致视觉割裂，影响用户使用体验。本发明可以解决上述问题。\n\n[0043]一种显示装置，如图1至图3所示，所述显示装置包括显示单元10、功能器件30以及用于驱动显示单元10显示的驱动模块20。\n\n[0044]具体的，显示单元10可以为液晶显示单元；所述显示单元10包括主显示区11和至少一个显示透光区12，所述主显示区11中设置有多个第一子像素13，所述显示透光区12中设置有多个第二子像素14；每个所述第二子像素14均包括至少一个微型发光二极管。\n\n[0045]需要说明的是，对于本领域技术人员可知，微型发光二极管具有超高亮度、高对比度、响应时间快以及透明度高等特点，通过在显示透光区12处设置微型发光二极管做透明显示，保证显示透光区12的透光率，防止对摄像头等功能器件30的采光造成影响的同时，显示透光区12也可以用于显示画面，从而使显示单元10实现全屏显示，提高用户使用体验。\n\n[0046]其中，显示透光区12可以设置一个或多个，所述显示透光区12的面积小于或等于100平方毫米。\n\n[0047]其中，所述主显示区11的像素密度大于所述显示透光区12的像素密度，从而可以保证显示透光区12处的转印良率与成本控制。\n\n[0048]需要说明的是，主显示区11的像素密度大于或等于400，显示透光区12的像素密度小于或等于200。\n\n[0049]具体的，所述功能器件30与所述显示透光区12对应设置，所述功能器件30包括指纹识别单元、摄像头、结构光传感器、飞行时间传感器、距离传感器和光线传感器中的至少一种。\n\n[0050]需要说明的是，实际实施中，可依据显示透光区12的面积大小，在显示透光区12处兼做补光灯、呼吸灯、时间显示等功能。\n\n[0051]具体的，如图3所示，所述驱动模块20包括图像数据输出单元、图像数据分配单元23以及驱动控制单元。\n\n[0052]其中，所述图像数据输出单元用于将与需要显示的图像信息对应的图像数据传输给图像数据分配单元23；所述图像数据分配单元23用于将接收到的图像数据划分为与主显示区11对应的第一图像数据和与显示透光区12对应的第二图像数据，并将第一图像数据和第二图像数据传输给驱动控制单元；所述驱动控制单元用于根据接收的第一图像数据和第二图像数据控制第一子像素13和第二子像素14同步点亮。\n\n[0053]在需要显示画面时，在驱动模块20中各模块的共同作用下，实现主显示区11的图像和显示透光区12的图像的无缝衔接和同步显示，从而解决传统液晶显示屏中与光学传感器对应的区域无法显示导致的视觉割裂问题。\n\n[0054]需要说明的是，图像数据与子像素的像素值对应，第一图像数据与第一子像素13的像素值对应，第二图像数据与第二子像素14的像素值对应。\n\n[0055]具体的，所述图像数据输出单元包括图像输出单元21和信号读取单元22。\n\n[0056]其中，所述图像输出单元21用于向信号读取单元22输出需要显示的图像信息；所述信号读取单元22用于获取需要显示的图像信息，并将与图像信息对应的图像数据传输给图像数据分配单元23。\n\n[0057]其中，所述主显示区11的像素分辨率与所述第一图像数据中的图像分辨率匹配，第一图像数据中的图像点的地址与所述第一子像素13的地址一一对应；所述第二图像数据中的图像点的地址与第二子像素14的绝对地址对应。\n\n[0058]具体的，所述驱动控制单元包括时序控制单元24和GOA驱动单元25。\n\n[0059]其中，时序控制单元24，用于根据接收的第一图像数据和第二图像数据，并传输控制信号给所述GOA驱动单元25；GOA驱动单元25用于根据接收到的控制信号控制第一子像素13和第二子像素14同步点亮。\n\n[0060]具体的，如图4所示，在一实施方式中，所述显示装置还包括背光模块40，所述显示单元10设置于所述背光模块40上。\n\n[0061]其中，所示显示单元10包括相对设置的阵列基板15和彩膜基板16，以及设置于所述阵列基板15和所述彩膜基板16之间的液晶层17、位于所述彩膜基板16上远离所述液晶层17的一侧的上偏光片18，以及位于所述阵列基板15上远离所述液晶层17的一侧上的下偏光片19。\n\n[0062]其中，所述背光模块40上设置有与所述显示透光区12对应的第一通孔42，所述功能器件30与所述第一通孔42对应设置。\n\n[0063]功能器件30打开时，位于显示透光区12的第二子像素14中的微型发光二极管关闭，此时主显示区11正常显示，显示透光区12呈透明状态，通过显示透光区12和第一通孔42为所述功能器件30提供采光通道；功能器件30关闭时，第二子像素14中的微型发光二极管打开，为显示透光区12提供光源，此时主显示区11和显示透光区12共同用于显示。\n\n[0064]在一实施方式中，所述第二子像素14中的微型发光二极管可以设置于所述阵列基板15的表面或层结构中，以为所述显示透光区12提供照明。\n\n[0065]需要说明的是，所述第二子像素14中的微型发光二极管还可以设置于所述彩膜基板16的表面或层结构中。\n\n[0066]具体的，所述背光模块40还包括为所述主显示区11提供光源的光源块41，光源块41可以为侧入式光源，光源块41包括至少一个LED灯。\n\n[0067]需要说明的是，也可以通过其他方式为主显示区11提供光源，例如每个所述第一子像素13也可以包括至少一个微型发光二极管，微型发光二极管设置于背光模块40上，主显示区11通过微型发光二极管提供光源。\n\n[0068]参见图5至图11，所述显示透光区12可以位于显示单元10上的任意位置，所述显示透光区12的形状也可以为任意形状，例如，挖孔(如图5和图6)、水滴状(如图7)、美人尖状(如图8)、刘海状(如图9)或开槽(如图10和图11)。\n\n[0069]需要说明的是，所述显示透光区12与所述主显示区11无缝衔接，因而在视觉上没有任何显示中断及不连续边界(如凹口、挖孔等)，可以实现实现完全的全面屏设计。\n\n[0070]基于上述显示装置，本发明还提供一种显示装置的驱动方法，如图12所示，包括以下步骤：\n\n[0071]S10、图像数据输出单元将与需要显示的图像信息对应的图像数据传输给图像数据分配单元23；\n\n[0072]S20、图像数据分配单元23将接收到的图像数据划分为与主显示区11对应的第一图像数据和与显示透光区12对应的第二图像数据，并将第一图像数据和第二图像数据传输给驱动控制单元；\n\n[0073]S30、驱动控制单元用于根据接收的第一图像数据和第二图像数据控制第一子像素13和第二子像素14同步点亮。\n\n[0074]具体的，所述步骤S10包括：\n\n[0075]S11、图像输出单元21向信号读取单元22输出需要显示的图像信息；\n\n[0076]S12、信号读取单元22获取需要显示的图像信息，并将与图像信息对应的图像数据传输给图像数据分配单元23。\n\n[0077]具体的，所述步骤S20包括：\n\n[0078]S21、图像数据分配单元23获取第一子像素13的地址和第二子像素14的绝对地址；\n\n[0079]S22、图像数据分配单元23将接收到的图像数据中地址与第一子像素13的地址一一对应的图像点的数据划分为第一图像数据，将接收到的图像数据中地址与第二子像素14的绝对地址对应的图像点的数据划分为第二图像数据；\n\n[0080]S23、将第一图像数据和第二图像数据传输给驱动控制单元。\n\n[0081]需要说明的是，所述步骤S22中，图像数据分配单元23接收到的图像数据中地址与第二子像素14的绝对地址距离最近的图像点即为与第二子像素14对应的图像点。\n\n[0082]本发明的有益效果为：通过在显示透光区12处设置微型发光二极管做透明显示，保证显示透光区12的透光率，防止对摄像头等功能器件30的采光造成影响的同时，显示透光区12也可以用于显示画面，从而使显示单元10实现全屏显示，提高用户使用体验。在需要显示画面的时，在驱动模块20中各模块的共同作用下，实现主显示区11的图像和显示透光区12的图像的无缝衔接和同步显示，提高巨量子像素转印时的先天制程良率，降低成本，同时解决传统液晶显示屏中与光学传感器对应的区域无法显示导致的视觉割裂问题。\n\n[0083]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10692, 23746, '技术领域\n\n[0001]本发明涉及显示技术领域，具体为一种显示装置及其制备方法。\n\n背景技术\n\n[0002]作为新兴显示技术，微发光二极管(Micro LED)显示相较于LCD、OLED显示有较多优势，如较低的功耗，较高的色域，较快的相应速率等，对封装水氧隔绝要求不高，被视为较有发展前景的一种显示技术。因此，较多面板厂家参与Micro LED技术开发之中，但是，Micro LED显示还有诸多技术难点需要克服，如巨量转移，绑定等。对于驱动Micro LED芯片的薄膜晶体管及Micro LED芯片之间的绑定而言，需要保证与薄膜晶体管连接的像素电极中的金属电极层不被后续制程腐蚀，以使像素电极中的金属电极层能够与Micro LED芯片形成良好的绑定。在显示装置的制作过程中，像素电极中的金属电极层图案化之后还需要有有机层制程，金属电极层易与后续制程的有机溶剂或有机膜发生反应而出现残留或者缺失。\n\n发明内容\n\n[0003]为解决上述技术问题：本发明提供一种显示装置及其制备方法，通过在非焊接区，在像素电极中的金属电极层上增加一层金属保护层，以解决金属电极层易与后续制程的有机溶剂或有机膜发生反应而出现残留或者缺失等问题，同时，仅保留焊接区的第一金属电极层，以提供Micro LED芯片焊接时的焊接连接点，而不影响后续制程。\n\n[0004]解决上述问题的技术方案是：本发明提供一种显示装置，包括阵列基板，以及像素电极，设于所述阵列基板上，所述像素电极具有焊接区和非焊接区，其中所述像素电极包括透明导电氧化物层，形成于所述阵列基板上；第一金属电极层，设于所述焊接区和所述非焊接区的所述透明导电氧化物层上；第二金属保护层，设于所述非焊接区的所述第一金属电极层上；Micro LED芯片，具有引脚，所述引脚对应的焊接在所述焊接区的所述第一金属电极层上。\n\n[0005]在本发明一实施例中，所述透明导电氧化物层所用材料为氧化铟锡、铝掺杂氧化锌、铟锌氧化物中的一种；所述第一金属电极层所用材料为铜；所述第二金属保护层所用材料为钼、钛及钼钛合金。\n\n[0006]在本发明一实施例中，所述阵列基板包括基板；缓冲层，设于所述基板上；有源层，设于所述缓冲层上；栅极绝缘层，设于所述有源层上；栅极层，设于所述栅极绝缘层上；层间介质层，覆于所述栅极层、所述有源层及所述缓冲层上；源极和漏极和公共电极，设于所述层间介质层上；所述源极和所述漏极连接至所述有源层；平坦层，覆于所述源极、所述漏极及所述层间介质层上，所述像素电极设于所述平坦层上且连接至所述漏极和所述公共电极；像素限定层，设于所述非焊接区的所述第二金属保护层上。\n\n[0007]在本发明一实施例中，所述源极和所述漏极为金属叠层结构或金属单层结构，所述金属叠层结构包括铜/钼叠层、铜/钼钛合金叠层、铜/钛叠层、铝/钼叠层中的一种，所述金属单层结构包括钼钛合金、铜铌合金中的一种。\n\n[0008]在本发明一实施例中，所述的显示装置还包括封装层，用以封装所述Micro LED芯片。\n\n[0009]本发明还公开了一种显示装置的制备方法，包括以下步骤：制备阵列基板；形成透明导电氧化物层于所述阵列基板上；形成第一金属电极层于焊接区和非焊接区的所述透明导电氧化物层上；形成第二金属保护层于所述焊接区和所述非焊接区的所述第一金属电极层上；去除所述焊接区的第二金属保护层，所述透明导电氧化物层、所述第一金属电极层和所述第二金属保护层形成像素电极；提供Micro LED芯片，所述Micro LED芯片具有引脚，将所述Micro LED芯片通过所述引脚的焊接至所述焊接区的所述第一金属电极层上。\n\n[0010]在本发明一实施例中，在去除所述焊接区的第二金属保护层步骤之前，还包括沉积像素限定材料于所述阵列基板和整个所述第二金属保护层上；提供掩膜板，将掩膜板置于所述像素限定材料上方，并通过曝光显影法去除所述焊接区域所述像素限定材料，在所述非焊接区形成像素限定层。\n\n[0011]在本发明一实施例中，在去除所述焊接区的第二金属保护层步骤中，包括通过干刻蚀法去除所述焊接区的第二金属保护层。\n\n[0012]在本发明一实施例中，在制备阵列基板步骤中，包括提供一基板；沉积缓冲材料于所述基板上，形成缓冲层；沉积氧化物半导体材料于所述缓冲层上，图案化后形成有源层；沉积栅极绝缘材料于所述有源层上，图案化后形成栅极绝缘层；沉积金属材料于所述栅极绝缘层上，图案化后形成栅极层；沉积层间介质于所述栅极层、所述有源层和所述缓冲层上，形成层间介质层；形成贯穿所述层间介质层并延伸至所述有源层表面的第一通孔；沉积金属材料于所述第一通孔内和所述层间介质层上，图案化后形成公共电极和连接于所述有源层的源极和漏极；形成平坦层于所述源极、所述漏极及所述层间介质层上；在所述漏极对应区域和所述公共电极对应区域，形成贯穿所述平坦层并延伸至所述漏极表面的一第二通孔和贯穿所述平坦层并延伸至所述公共电极表面的另一第二通孔；在形成透明导电氧化物层于阵列基板步骤中，包括沉积透明导电氧化物于所述第二通孔和所述平坦层的表面形成所述透明导电氧化物层。\n\n[0013]在本发明一实施例中，所述的显示装置的制备方法还包括以下步骤，形成封装层于所述Micro LED芯片、所述像素限定层和所述平坦层上。\n\n[0014]本发明的有益效果是：本发明的显示装置及其制备方法，通过在非焊接区，在像素电极中的金属电极层上增加一层金属保护层，仅在焊接区裸露第一金属电极层(铜层)，利用像素限定层或黑色矩阵等图案层作为自对准硬掩模(Hard Mask)，对稳定性较高的第二金属保护层进行刻蚀，而保留焊接区的第一金属电极层(铜层)并使之裸露，将第一金属电极层(铜层)作为Micro LED芯片与阵列基板的主体导线，在非焊接区，由于存在稳定性较高的第二金属保护层，能够保护非焊接区的第一金属电极层(铜层)在后续制程中不被腐蚀。\n\n附图说明\n\n[0015]下面结合附图和实施例对本发明作进一步解释。\n\n[0016]图1是本发明实施例的形成有源层后的显示装置的结构图。\n\n[0017]图2是本发明实施例的形成栅极层后的显示装置的结构图。\n\n[0018]图3是本发明实施例的形成第一通孔后的显示装置的结构图。\n\n[0019]图4是本发明实施例的形成第二通孔后的显示装置的结构图。\n\n[0020]图5是本发明实施例的形成像素电极后且去除焊接区的第二金属保护层时的显示装置的结构图。\n\n[0021]图6是本发明实施例的形成像素限定层后的显示装置的结构图。\n\n[0022]图7是本发明实施例的形成去除焊接区的第二金属保护层后的显示装置的结构图。\n\n[0023]图8是本发明实施例的形成封装层后的显示装置的结构图。\n\n[0024]附图标记：\n\n[0025]1显示装置； 2掩膜板；\n\n[0026]11阵列基板； 12像素电极；\n\n[0027]13像素限定层； 14Micro LED芯片；\n\n[0028]15封装层；\n\n[0029]111基板； 112缓冲层；\n\n[0030]113有源层； 114栅极绝缘层；\n\n[0031]115栅极层； 116层间介质层；\n\n[0032]117源极； 118漏极；\n\n[0033]119公共电极； 110平坦层；\n\n[0034]1161第一通孔； 1101第二通孔；\n\n[0035]121焊接区；\n\n[0036]122非焊接区； 123透明导电氧化物层；\n\n[0037]124第一金属电极层； 125第二金属保护层；\n\n[0038]141引脚。\n\n具体实施方式\n\n[0039]以下实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「顶」、「底」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。\n\n[0040]如图8所示，在一实施例中，本发明的显示装置1包括阵列基板11以及像素电极12、像素限定层13、Micro LED芯片14以及封装层15。图8为一个像素单元的显示装置1的结构图。\n\n[0041]所述阵列基板11包括基板111、缓冲层112、栅极绝缘层114、栅极层115、层间介质层116、源极117和漏极118和公共电极119、平坦层110。\n\n[0042]所述基板111为玻璃基板，所述缓冲层112设于所述基板111的一表面，所述缓冲层112的缓冲材料包括氧化硅、氮化硅、氮氧化硅、氧化铝中的至少一种，本实施例中，通过所述缓冲材料形成的所述缓冲层112可以是单层结构，如单层的氮化硅层、单层的氧化硅层等，也可以是多层叠层结构，如氮化硅/氧化硅叠层或者氧化铝/氧化硅叠层。\n\n[0043]所述有源层113设于所述缓冲层112上，所述有源层113所用材料为氧化物半导体材料，包括铟镓锌氧化物(IGZO)、铟锌氧化物(IZO)、铟镓氧化物(IGO)、铟镓锡氧化物(IGTO)、铟镓锌锡氧化物(IGZTO)中的一种。\n\n[0044]所述栅极绝缘层114设于所述有源层113上；所述栅极绝缘层114所用的栅极绝缘材料包括氧化硅、氮化硅、氧化铝中的至少一种。通过所述栅极绝缘材料形成的所述栅极绝缘层114可以是单层结构，如单层的氮化硅层、单层的氧化硅层等，也可以是多层叠层结构，如氮化硅/氧化硅叠层或者氧化铝/氧化硅叠层。\n\n[0045]所述栅极层115设于所述栅极绝缘层114上；所述栅极层115所用材料包括金属材料，可以选择铜、钼、钛、铝、铌或者上述金属材料的合金。通过金属材料或其合金形成的所述栅极层115，可以是单层结构，如铜铌合金、钼钛合金等，也可以是多层叠层结构，如铜/钼叠层、铜/钼钛合金叠层、铜/钛叠层、铝/钼叠层等。\n\n[0046]所述层间介质层116覆于所述栅极层115、所述有源层113及所述缓冲层112上；所述层间介质层116具有贯穿所述层间介质层116并延伸至所述有源层113表面的第一通孔1161。所述层间介质层116所用的层间介质包括氧化硅、氮化硅、氮氧化硅中的至少一种，本实施例中，通过所述层间介质形成的所述层间介质层116可以是单层结构，如单层的氮化硅层、单层的氧化硅层等，也可以是多层叠层结构，如氮化硅/氧化硅叠层。\n\n[0047]所述源极117、所述漏极118和所述公共电极119设于所述层间介质层116上；参见图3所示，其中，所述源极117和所述漏极118通过所述第一通孔1161连接至所述有源层113。所述源极117、所述漏极118和所述公共电极119所用的金属材料可以选择铜、钼、钛、铝、铌或者上述金属材料的合金。通过金属材料或其合金形成的所述源极117、所述漏极118和所述公共电极119，可以是金属单层结构，如铜铌合金、钼钛合金等，也可以是金属叠层结构，如铜/钼叠层、铜/钼钛合金叠层、铜/钛叠层、铝/钼叠层等。\n\n[0048]所述平坦层110覆于所述源极117、所述漏极118及所述层间介质层116上，所述平坦层110所用材料包括氧化硅、氮化硅、氮氧化硅中的至少一种，本实施例中，所述平坦层110可以是单层结构，如单层的氮化硅层、单层的氧化硅层等，也可以是多层叠层结构，如氮化硅/氧化硅叠层。\n\n[0049]在所述漏极118对应区域和所述公共电极119对应区域，参见图4所示，所述平坦层110具有贯穿所述平坦层110并延伸至所述漏极118表面的一第二通孔1101和贯穿所述平坦层110并延伸至所述公共电极119表面的另一第二通孔1101。\n\n[0050]所述像素电极12设于所述平坦层110上且通过所述第二通孔1101连接至所述漏极118和所述公共电极119。具体的讲，所述像素电极12具有焊接区121和非焊接区122，所述像素电极12包括透明导电氧化物层123、第一金属电极层124、第二金属保护层125，所述透明导电氧化物层123形成于所述阵列基板11的平坦层110上；所述透明导电氧化物层123所用材料为氧化铟锡、铝掺杂氧化锌、铟锌氧化物中的一种。所述第一金属电极层124设于所述焊接区121和所述非焊接区122的所述透明导电氧化物层123上；所述第一金属电极层124所用材料为铜。所述第二金属保护层125设于所述非焊接区122的所述第一金属电极层124上；所述第二金属保护层125所用材料为钼、钛及钼钛合金。所述第二金属保护层125有利于保护所述第一金属电极层124不被后续制程中的色阻等液体腐蚀。\n\n[0051]所述像素限定层13或者黑色矩阵设于所述非焊接区122的所述第二金属保护层125上。在需要与所述Micro LED芯片14焊接的金属区域上，即焊接区121，利用像素定义层或黑色矩阵等图案层作为硬掩膜(Hard Mask)，对所述像素电极12的所述第二金属保护层125进行刻蚀，刻蚀方法可以为干法刻蚀，刻蚀时只刻蚀掉所述焊接区121中的所述第一金属电极层124上表面的第二金属保护层125即可，而保留所述第一金属电极层124。\n\n[0052]所述Micro LED芯片14具有引脚141，所述引脚141对应的焊接在所述焊接区121的所述第一金属电极层124上。本实施例以倒装Micro LED芯片14为例，实际可用采用垂直结构Micro LED芯片14进行绑定及蒸镀以连接所述第一金属电极。\n\n[0053]所述的显示装置1还包括封装层15，覆于所述Micro LED芯片14、所述像素限定层13和所述平坦层110上，用以封装所述Micro LED芯片14。\n\n[0054]为了更加清楚的解释本发明的显示装置1，本实施例还公开了一种显示装置1的制备方法，包括以下步骤。\n\n[0055]制备阵列基板11；在制备阵列基板11步骤中，包括以下步骤：参见图1所示，提供一基板111，本实施例中，为透明的玻璃基板；沉积缓冲材料于所述基板111上形成缓冲层112，所述缓冲层112的缓冲材料包括氧化硅、氮化硅、氮氧化硅、氧化铝中的至少一种，本实施例中，通过所述缓冲材料形成的所述缓冲层112可以是单层结构，如单层的氮化硅层、单层的氧化硅层等，也可以是多层叠层结构，如氮化硅/氧化硅叠层或者氧化铝/氧化硅叠层。沉积氧化物半导体材料于所述缓冲层112上，图案化后形成有源层113，所述有源层113所用氧化物半导体材料包括铟镓锌氧化物(IGZO)、铟锌氧化物(IZO)、铟镓氧化物(IGO)、铟镓锡氧化物(IGTO)、铟镓锌锡氧化物(IGZTO)中的一种；参见图2所示，沉积栅极绝缘材料于所述有源层113上，图案化后形成栅极绝缘层114，所述栅极绝缘层114所用的栅极绝缘材料包括氧化硅、氮化硅、氧化铝中的至少一种。通过所述栅极绝缘材料形成的所述栅极绝缘层114可以是单层结构，如单层的氮化硅层、单层的氧化硅层等，也可以是多层叠层结构，如氮化硅/氧化硅叠层或者氧化铝/氧化硅叠层。沉积金属材料于所述栅极绝缘层114上，图案化后形成栅极层115；所述栅极层115所用材料包括金属材料，可以选择铜、钼、钛、铝、铌或者上述金属材料的合金。通过金属材料或其合金形成的所述栅极层115，可以是单层结构，如铜铌合金、钼钛合金等，也可以是多层叠层结构，如铜/钼叠层、铜/钼钛合金叠层、铜/钛叠层、铝/钼叠层等。参见图3所示，沉积层间介质于所述栅极层115、所述有源层113和所述缓冲层112上，形成层间介质层116，所述层间介质层116所用的层间介质包括氧化硅、氮化硅、氮氧化硅中的至少一种，本实施例中，通过所述层间介质形成的所述层间介质层116可以是单层结构，如单层的氮化硅层、单层的氧化硅层等，也可以是多层叠层结构，如氮化硅/氧化硅叠层。形成贯穿所述层间介质层116并延伸至所述有源层113表面的第一通孔1161。参见图4所示，沉积金属材料于所述第一通孔1161内和所述层间介质层116上，图案化后形成公共电极119和连接于所述有源层113的源极117和漏极118，所述源极117、所述漏极118和所述公共电极119所用的金属材料可以选择铜、钼、钛、铝、铌或者上述金属材料的合金。通过金属材料或其合金形成的所述源极117、所述漏极118和所述公共电极119，可以是金属单层结构，如铜铌合金、钼钛合金等，也可以是金属叠层结构，如铜/钼叠层、铜/钼钛合金叠层、铜/钛叠层、铝/钼叠层等。形成平坦层110于所述源极117、所述漏极118及所述层间介质层116上；所述平坦层110所用材料包括氧化硅、氮化硅、氮氧化硅中的至少一种，所述平坦层110可以是单层结构，如单层的氮化硅层、单层的氧化硅层等，也可以是多层叠层结构，如氮化硅/氧化硅叠层。在所述源极117对应区域和所述公共电极119对应区域，形成贯穿所述平坦层110并延伸至所述源极117表面的一第二通孔1101和贯穿所述平坦层110并延伸至所述公共电极119表面的另一第二通孔1101。\n\n[0056]参见图5所示，形成透明导电氧化物层123于所述阵列基板11上；具体地讲，沉积透明导电氧化物于所述第二通孔1101和所述平坦层110的表面，形成所述透明导电氧化物层123，所述透明导电氧化物层123所用材料为氧化铟锡、铝掺杂氧化锌、铟锌氧化物中的一种。形成第一金属电极层124于焊接区121和非焊接区122的所述透明导电氧化物层123上；具体的讲，沉积铜所述第一金属电极层124所用材料为铜。形成第二金属保护层125于所述焊接区121和所述非焊接区122的所述第一金属电极层124上；所述第二金属保护层125所用材料为钼、钛及钼钛合金。所述第二金属保护层125有利于保护所述第一金属电极层124不被后续制程中的色阻等液体腐蚀。\n\n[0057]参见图6所示，在去除所述焊接区121的第二金属保护层125步骤之前，沉积像素限定材料于所述阵列基板11和整个所述第二金属保护层125上；提供掩膜板2，将掩膜板2置于所述像素限定材料上方，并通过曝光显影法去除所述焊接区121域所述像素限定材料，在所述非焊接区122形成像素限定层13，图6中，白色向下箭头为照射光线。\n\n[0058]如图7所示，通过干刻蚀法去除所述焊接区121的第二金属保护层125，所述透明导电氧化物层123、所述第一金属电极层124和刻蚀后的所述第二金属保护层125形成像素电极12。\n\n[0059]如图8所示，提供Micro LED芯片14，所述Micro LED芯片14具有引脚141，将所述Micro LED芯片14通过所述引脚141的焊接至所述焊接区121的所述第一金属电极层124上；形成封装层15于所述Micro LED芯片14、所述像素限定层13和所述平坦层110上，所述封装层15为有机/无机交替沉积的保护膜，其具有阻隔水氧功能及防止机械碰撞造成损伤性能。\n\n[0060]以上仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。', '技术领域\n\n[0001]本发明涉及显示技术领域，具体为一种显示装置及其制备方法。\n\n背景技术\n\n[0002]作为新兴显示技术，微发光二极管(Micro LED)显示相较于LCD、OLED显示有较多优势，如较低的功耗，较高的色域，较快的相应速率等，对封装水氧隔绝要求不高，被视为较有发展前景的一种显示技术。因此，较多面板厂家参与Micro LED技术开发之中，但是，Micro LED显示还有诸多技术难点需要克服，如巨量转移，绑定等。对于驱动Micro LED芯片的薄膜晶体管及Micro LED芯片之间的绑定而言，需要保证与薄膜晶体管连接的像素电极中的金属电极层不被后续制程腐蚀，以使像素电极中的金属电极层能够与Micro LED芯片形成良好的绑定。在显示装置的制作过程中，像素电极中的金属电极层图案化之后还需要有有机层制程，金属电极层易与后续制程的有机溶剂或有机膜发生反应而出现残留或者缺失。\n\n发明内容\n\n[0003]为解决上述技术问题：本发明提供一种显示装置及其制备方法，通过在非焊接区，在像素电极中的金属电极层上增加一层金属保护层，以解决金属电极层易与后续制程的有机溶剂或有机膜发生反应而出现残留或者缺失等问题，同时，仅保留焊接区的第一金属电极层，以提供Micro LED芯片焊接时的焊接连接点，而不影响后续制程。\n\n[0004]解决上述问题的技术方案是：本发明提供一种显示装置，包括阵列基板，以及像素电极，设于所述阵列基板上，所述像素电极具有焊接区和非焊接区，其中所述像素电极包括透明导电氧化物层，形成于所述阵列基板上；第一金属电极层，设于所述焊接区和所述非焊接区的所述透明导电氧化物层上；第二金属保护层，设于所述非焊接区的所述第一金属电极层上；Micro LED芯片，具有引脚，所述引脚对应的焊接在所述焊接区的所述第一金属电极层上。\n\n[0005]在本发明一实施例中，所述透明导电氧化物层所用材料为氧化铟锡、铝掺杂氧化锌、铟锌氧化物中的一种；所述第一金属电极层所用材料为铜；所述第二金属保护层所用材料为钼、钛及钼钛合金。\n\n[0006]在本发明一实施例中，所述阵列基板包括基板；缓冲层，设于所述基板上；有源层，设于所述缓冲层上；栅极绝缘层，设于所述有源层上；栅极层，设于所述栅极绝缘层上；层间介质层，覆于所述栅极层、所述有源层及所述缓冲层上；源极和漏极和公共电极，设于所述层间介质层上；所述源极和所述漏极连接至所述有源层；平坦层，覆于所述源极、所述漏极及所述层间介质层上，所述像素电极设于所述平坦层上且连接至所述漏极和所述公共电极；像素限定层，设于所述非焊接区的所述第二金属保护层上。\n\n[0007]在本发明一实施例中，所述源极和所述漏极为金属叠层结构或金属单层结构，所述金属叠层结构包括铜/钼叠层、铜/钼钛合金叠层、铜/钛叠层、铝/钼叠层中的一种，所述金属单层结构包括钼钛合金、铜铌合金中的一种。\n\n[0008]在本发明一实施例中，所述的显示装置还包括封装层，用以封装所述Micro LED芯片。\n\n[0009]本发明还公开了一种显示装置的制备方法，包括以下步骤：制备阵列基板；形成透明导电氧化物层于所述阵列基板上；形成第一金属电极层于焊接区和非焊接区的所述透明导电氧化物层上；形成第二金属保护层于所述焊接区和所述非焊接区的所述第一金属电极层上；去除所述焊接区的第二金属保护层，所述透明导电氧化物层、所述第一金属电极层和所述第二金属保护层形成像素电极；提供Micro LED芯片，所述Micro LED芯片具有引脚，将所述Micro LED芯片通过所述引脚的焊接至所述焊接区的所述第一金属电极层上。\n\n[0010]在本发明一实施例中，在去除所述焊接区的第二金属保护层步骤之前，还包括沉积像素限定材料于所述阵列基板和整个所述第二金属保护层上；提供掩膜板，将掩膜板置于所述像素限定材料上方，并通过曝光显影法去除所述焊接区域所述像素限定材料，在所述非焊接区形成像素限定层。\n\n[0011]在本发明一实施例中，在去除所述焊接区的第二金属保护层步骤中，包括通过干刻蚀法去除所述焊接区的第二金属保护层。\n\n[0012]在本发明一实施例中，在制备阵列基板步骤中，包括提供一基板；沉积缓冲材料于所述基板上，形成缓冲层；沉积氧化物半导体材料于所述缓冲层上，图案化后形成有源层；沉积栅极绝缘材料于所述有源层上，图案化后形成栅极绝缘层；沉积金属材料于所述栅极绝缘层上，图案化后形成栅极层；沉积层间介质于所述栅极层、所述有源层和所述缓冲层上，形成层间介质层；形成贯穿所述层间介质层并延伸至所述有源层表面的第一通孔；沉积金属材料于所述第一通孔内和所述层间介质层上，图案化后形成公共电极和连接于所述有源层的源极和漏极；形成平坦层于所述源极、所述漏极及所述层间介质层上；在所述漏极对应区域和所述公共电极对应区域，形成贯穿所述平坦层并延伸至所述漏极表面的一第二通孔和贯穿所述平坦层并延伸至所述公共电极表面的另一第二通孔；在形成透明导电氧化物层于阵列基板步骤中，包括沉积透明导电氧化物于所述第二通孔和所述平坦层的表面形成所述透明导电氧化物层。\n\n[0013]在本发明一实施例中，所述的显示装置的制备方法还包括以下步骤，形成封装层于所述Micro LED芯片、所述像素限定层和所述平坦层上。\n\n[0014]本发明的有益效果是：本发明的显示装置及其制备方法，通过在非焊接区，在像素电极中的金属电极层上增加一层金属保护层，仅在焊接区裸露第一金属电极层(铜层)，利用像素限定层或黑色矩阵等图案层作为自对准硬掩模(Hard Mask)，对稳定性较高的第二金属保护层进行刻蚀，而保留焊接区的第一金属电极层(铜层)并使之裸露，将第一金属电极层(铜层)作为Micro LED芯片与阵列基板的主体导线，在非焊接区，由于存在稳定性较高的第二金属保护层，能够保护非焊接区的第一金属电极层(铜层)在后续制程中不被腐蚀。\n\n附图说明\n\n[0015]下面结合附图和实施例对本发明作进一步解释。\n\n[0016]图1是本发明实施例的形成有源层后的显示装置的结构图。\n\n[0017]图2是本发明实施例的形成栅极层后的显示装置的结构图。\n\n[0018]图3是本发明实施例的形成第一通孔后的显示装置的结构图。\n\n[0019]图4是本发明实施例的形成第二通孔后的显示装置的结构图。\n\n[0020]图5是本发明实施例的形成像素电极后且去除焊接区的第二金属保护层时的显示装置的结构图。\n\n[0021]图6是本发明实施例的形成像素限定层后的显示装置的结构图。\n\n[0022]图7是本发明实施例的形成去除焊接区的第二金属保护层后的显示装置的结构图。\n\n[0023]图8是本发明实施例的形成封装层后的显示装置的结构图。\n\n[0024]附图标记：\n\n[0025]1显示装置； 2掩膜板；\n\n[0026]11阵列基板； 12像素电极；\n\n[0027]13像素限定层； 14Micro LED芯片；\n\n[0028]15封装层；\n\n[0029]111基板； 112缓冲层；\n\n[0030]113有源层； 114栅极绝缘层；\n\n[0031]115栅极层； 116层间介质层；\n\n[0032]117源极； 118漏极；\n\n[0033]119公共电极； 110平坦层；\n\n[0034]1161第一通孔； 1101第二通孔；\n\n[0035]121焊接区；\n\n[0036]122非焊接区； 123透明导电氧化物层；\n\n[0037]124第一金属电极层； 125第二金属保护层；\n\n[0038]141引脚。\n\n具体实施方式\n\n[0039]以下实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「顶」、「底」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。\n\n[0040]如图8所示，在一实施例中，本发明的显示装置1包括阵列基板11以及像素电极12、像素限定层13、Micro LED芯片14以及封装层15。图8为一个像素单元的显示装置1的结构图。\n\n[0041]所述阵列基板11包括基板111、缓冲层112、栅极绝缘层114、栅极层115、层间介质层116、源极117和漏极118和公共电极119、平坦层110。\n\n[0042]所述基板111为玻璃基板，所述缓冲层112设于所述基板111的一表面，所述缓冲层112的缓冲材料包括氧化硅、氮化硅、氮氧化硅、氧化铝中的至少一种，本实施例中，通过所述缓冲材料形成的所述缓冲层112可以是单层结构，如单层的氮化硅层、单层的氧化硅层等，也可以是多层叠层结构，如氮化硅/氧化硅叠层或者氧化铝/氧化硅叠层。\n\n[0043]所述有源层113设于所述缓冲层112上，所述有源层113所用材料为氧化物半导体材料，包括铟镓锌氧化物(IGZO)、铟锌氧化物(IZO)、铟镓氧化物(IGO)、铟镓锡氧化物(IGTO)、铟镓锌锡氧化物(IGZTO)中的一种。\n\n[0044]所述栅极绝缘层114设于所述有源层113上；所述栅极绝缘层114所用的栅极绝缘材料包括氧化硅、氮化硅、氧化铝中的至少一种。通过所述栅极绝缘材料形成的所述栅极绝缘层114可以是单层结构，如单层的氮化硅层、单层的氧化硅层等，也可以是多层叠层结构，如氮化硅/氧化硅叠层或者氧化铝/氧化硅叠层。\n\n[0045]所述栅极层115设于所述栅极绝缘层114上；所述栅极层115所用材料包括金属材料，可以选择铜、钼、钛、铝、铌或者上述金属材料的合金。通过金属材料或其合金形成的所述栅极层115，可以是单层结构，如铜铌合金、钼钛合金等，也可以是多层叠层结构，如铜/钼叠层、铜/钼钛合金叠层、铜/钛叠层、铝/钼叠层等。\n\n[0046]所述层间介质层116覆于所述栅极层115、所述有源层113及所述缓冲层112上；所述层间介质层116具有贯穿所述层间介质层116并延伸至所述有源层113表面的第一通孔1161。所述层间介质层116所用的层间介质包括氧化硅、氮化硅、氮氧化硅中的至少一种，本实施例中，通过所述层间介质形成的所述层间介质层116可以是单层结构，如单层的氮化硅层、单层的氧化硅层等，也可以是多层叠层结构，如氮化硅/氧化硅叠层。\n\n[0047]所述源极117、所述漏极118和所述公共电极119设于所述层间介质层116上；参见图3所示，其中，所述源极117和所述漏极118通过所述第一通孔1161连接至所述有源层113。所述源极117、所述漏极118和所述公共电极119所用的金属材料可以选择铜、钼、钛、铝、铌或者上述金属材料的合金。通过金属材料或其合金形成的所述源极117、所述漏极118和所述公共电极119，可以是金属单层结构，如铜铌合金、钼钛合金等，也可以是金属叠层结构，如铜/钼叠层、铜/钼钛合金叠层、铜/钛叠层、铝/钼叠层等。\n\n[0048]所述平坦层110覆于所述源极117、所述漏极118及所述层间介质层116上，所述平坦层110所用材料包括氧化硅、氮化硅、氮氧化硅中的至少一种，本实施例中，所述平坦层110可以是单层结构，如单层的氮化硅层、单层的氧化硅层等，也可以是多层叠层结构，如氮化硅/氧化硅叠层。\n\n[0049]在所述漏极118对应区域和所述公共电极119对应区域，参见图4所示，所述平坦层110具有贯穿所述平坦层110并延伸至所述漏极118表面的一第二通孔1101和贯穿所述平坦层110并延伸至所述公共电极119表面的另一第二通孔1101。\n\n[0050]所述像素电极12设于所述平坦层110上且通过所述第二通孔1101连接至所述漏极118和所述公共电极119。具体的讲，所述像素电极12具有焊接区121和非焊接区122，所述像素电极12包括透明导电氧化物层123、第一金属电极层124、第二金属保护层125，所述透明导电氧化物层123形成于所述阵列基板11的平坦层110上；所述透明导电氧化物层123所用材料为氧化铟锡、铝掺杂氧化锌、铟锌氧化物中的一种。所述第一金属电极层124设于所述焊接区121和所述非焊接区122的所述透明导电氧化物层123上；所述第一金属电极层124所用材料为铜。所述第二金属保护层125设于所述非焊接区122的所述第一金属电极层124上；所述第二金属保护层125所用材料为钼、钛及钼钛合金。所述第二金属保护层125有利于保护所述第一金属电极层124不被后续制程中的色阻等液体腐蚀。\n\n[0051]所述像素限定层13或者黑色矩阵设于所述非焊接区122的所述第二金属保护层125上。在需要与所述Micro LED芯片14焊接的金属区域上，即焊接区121，利用像素定义层或黑色矩阵等图案层作为硬掩膜(Hard Mask)，对所述像素电极12的所述第二金属保护层125进行刻蚀，刻蚀方法可以为干法刻蚀，刻蚀时只刻蚀掉所述焊接区121中的所述第一金属电极层124上表面的第二金属保护层125即可，而保留所述第一金属电极层124。\n\n[0052]所述Micro LED芯片14具有引脚141，所述引脚141对应的焊接在所述焊接区121的所述第一金属电极层124上。本实施例以倒装Micro LED芯片14为例，实际可用采用垂直结构Micro LED芯片14进行绑定及蒸镀以连接所述第一金属电极。\n\n[0053]所述的显示装置1还包括封装层15，覆于所述Micro LED芯片14、所述像素限定层13和所述平坦层110上，用以封装所述Micro LED芯片14。\n\n[0054]为了更加清楚的解释本发明的显示装置1，本实施例还公开了一种显示装置1的制备方法，包括以下步骤。\n\n[0055]制备阵列基板11；在制备阵列基板11步骤中，包括以下步骤：参见图1所示，提供一基板111，本实施例中，为透明的玻璃基板；沉积缓冲材料于所述基板111上形成缓冲层112，所述缓冲层112的缓冲材料包括氧化硅、氮化硅、氮氧化硅、氧化铝中的至少一种，本实施例中，通过所述缓冲材料形成的所述缓冲层112可以是单层结构，如单层的氮化硅层、单层的氧化硅层等，也可以是多层叠层结构，如氮化硅/氧化硅叠层或者氧化铝/氧化硅叠层。沉积氧化物半导体材料于所述缓冲层112上，图案化后形成有源层113，所述有源层113所用氧化物半导体材料包括铟镓锌氧化物(IGZO)、铟锌氧化物(IZO)、铟镓氧化物(IGO)、铟镓锡氧化物(IGTO)、铟镓锌锡氧化物(IGZTO)中的一种；参见图2所示，沉积栅极绝缘材料于所述有源层113上，图案化后形成栅极绝缘层114，所述栅极绝缘层114所用的栅极绝缘材料包括氧化硅、氮化硅、氧化铝中的至少一种。通过所述栅极绝缘材料形成的所述栅极绝缘层114可以是单层结构，如单层的氮化硅层、单层的氧化硅层等，也可以是多层叠层结构，如氮化硅/氧化硅叠层或者氧化铝/氧化硅叠层。沉积金属材料于所述栅极绝缘层114上，图案化后形成栅极层115；所述栅极层115所用材料包括金属材料，可以选择铜、钼、钛、铝、铌或者上述金属材料的合金。通过金属材料或其合金形成的所述栅极层115，可以是单层结构，如铜铌合金、钼钛合金等，也可以是多层叠层结构，如铜/钼叠层、铜/钼钛合金叠层、铜/钛叠层、铝/钼叠层等。参见图3所示，沉积层间介质于所述栅极层115、所述有源层113和所述缓冲层112上，形成层间介质层116，所述层间介质层116所用的层间介质包括氧化硅、氮化硅、氮氧化硅中的至少一种，本实施例中，通过所述层间介质形成的所述层间介质层116可以是单层结构，如单层的氮化硅层、单层的氧化硅层等，也可以是多层叠层结构，如氮化硅/氧化硅叠层。形成贯穿所述层间介质层116并延伸至所述有源层113表面的第一通孔1161。参见图4所示，沉积金属材料于所述第一通孔1161内和所述层间介质层116上，图案化后形成公共电极119和连接于所述有源层113的源极117和漏极118，所述源极117、所述漏极118和所述公共电极119所用的金属材料可以选择铜、钼、钛、铝、铌或者上述金属材料的合金。通过金属材料或其合金形成的所述源极117、所述漏极118和所述公共电极119，可以是金属单层结构，如铜铌合金、钼钛合金等，也可以是金属叠层结构，如铜/钼叠层、铜/钼钛合金叠层、铜/钛叠层、铝/钼叠层等。形成平坦层110于所述源极117、所述漏极118及所述层间介质层116上；所述平坦层110所用材料包括氧化硅、氮化硅、氮氧化硅中的至少一种，所述平坦层110可以是单层结构，如单层的氮化硅层、单层的氧化硅层等，也可以是多层叠层结构，如氮化硅/氧化硅叠层。在所述源极117对应区域和所述公共电极119对应区域，形成贯穿所述平坦层110并延伸至所述源极117表面的一第二通孔1101和贯穿所述平坦层110并延伸至所述公共电极119表面的另一第二通孔1101。\n\n[0056]参见图5所示，形成透明导电氧化物层123于所述阵列基板11上；具体地讲，沉积透明导电氧化物于所述第二通孔1101和所述平坦层110的表面，形成所述透明导电氧化物层123，所述透明导电氧化物层123所用材料为氧化铟锡、铝掺杂氧化锌、铟锌氧化物中的一种。形成第一金属电极层124于焊接区121和非焊接区122的所述透明导电氧化物层123上；具体的讲，沉积铜所述第一金属电极层124所用材料为铜。形成第二金属保护层125于所述焊接区121和所述非焊接区122的所述第一金属电极层124上；所述第二金属保护层125所用材料为钼、钛及钼钛合金。所述第二金属保护层125有利于保护所述第一金属电极层124不被后续制程中的色阻等液体腐蚀。\n\n[0057]参见图6所示，在去除所述焊接区121的第二金属保护层125步骤之前，沉积像素限定材料于所述阵列基板11和整个所述第二金属保护层125上；提供掩膜板2，将掩膜板2置于所述像素限定材料上方，并通过曝光显影法去除所述焊接区121域所述像素限定材料，在所述非焊接区122形成像素限定层13，图6中，白色向下箭头为照射光线。\n\n[0058]如图7所示，通过干刻蚀法去除所述焊接区121的第二金属保护层125，所述透明导电氧化物层123、所述第一金属电极层124和刻蚀后的所述第二金属保护层125形成像素电极12。\n\n[0059]如图8所示，提供Micro LED芯片14，所述Micro LED芯片14具有引脚141，将所述Micro LED芯片14通过所述引脚141的焊接至所述焊接区121的所述第一金属电极层124上；形成封装层15于所述Micro LED芯片14、所述像素限定层13和所述平坦层110上，所述封装层15为有机/无机交替沉积的保护膜，其具有阻隔水氧功能及防止机械碰撞造成损伤性能。\n\n[0060]以上仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。');
INSERT INTO `os_patent_instruction_text` VALUES (10693, 23747, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其是涉及一种显示面板驱动方法和显示装置。\n\n背景技术\n\n[0002]现有miniLED由于具有高亮、高对比度、可实现局部调光、可弯曲、窄边框等优点，作为直下式背光源广泛应用，但随着显示器件的尺寸增大，使得需要拼接miniLED作为背光源、而对于拼接的背光源、在miniLED的拼接处会存在较明显的拼接缝隙，在显示器件显示时，会在拼接处呈现处拼接暗线，影响显示效果。\n\n[0003]所以，现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题。\n\n发明内容\n\n[0004]本发明提供一种显示面板驱动方法和显示装置，用于缓解现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题。\n\n[0005]为解决上述问题，本发明提供的技术方案如下：\n\n[0006]本发明提供一种显示面板驱动方法，该显示面板驱动方法包括：\n\n[0007]获取待驱动子像素的第一驱动灰阶；\n\n[0008]确定所述待驱动子像素所处区域，并在所述待驱动子像素位于拼接区时，调用拼接区补偿系数；\n\n[0009]根据所述拼接区补偿系数计算出所述待驱动子像素的第二驱动灰阶；\n\n[0010]使用所述第二驱动灰阶驱动所述待驱动子像素。\n\n[0011]在本发明提供的显示面板驱动方法中，所述调用拼接区补偿系数的步骤包括：\n\n[0012]使用第一公式G2\'＝G3+L12/L2*|G3-G1|确定拼接区第二待驱动子像素的第二补偿驱动灰阶，其中，G2\'为拼接区第二待驱动像素的第二补偿驱动灰阶，G3为第三光源区第三待驱动子像素的第三补偿驱动灰阶，G1为第一光源区第一待驱动子像素的第一补偿驱动灰阶，L1为所述第二待驱动子像素与所述第三待驱动子像素之间的距离，L为所述第一待驱动子像素与所述第三待驱动子像素之间的距离；\n\n[0013]获取拼接区第二待驱动子像素的第二实际驱动灰阶G2；\n\n[0014]使用所述第二实际驱动灰阶G2和所述第二补偿驱动灰阶G2\'得到拼接区补偿系数，所述拼接区补偿系数k＝G2\'/G2。\n\n[0015]在本发明提供的显示面板驱动方法中，所述使用第一公式G2\'＝G3+L12/L2*|G3-G1|确定拼接区第二待驱动子像素的第二补偿驱动灰阶的步骤包括：\n\n[0016]获取第三光源区第三待驱动子像素的第三补偿驱动灰阶G3；\n\n[0017]获取第一光源区第一待驱动子像素的第一补偿驱动灰阶G1；\n\n[0018]获取所述第二待驱动子像素与所述第三待驱动子像素之间的距离L1，\n\n[0019]获取所述第一待驱动子像素与所述第三待驱动子像素之间的距离L；\n\n[0020]得到第一公式G2\'＝G3+L12/L2*|G3-G1|。\n\n[0021]在本发明提供的显示面板驱动方法中，所述调用拼接区补偿系数的步骤包括：\n\n[0022]使用第二公式G2\'＝G1+L22/L2*|G3-G1|确定拼接区第二待驱动子像素的第二补偿驱动灰阶，其中，G2\'为拼接区第二待驱动像素的第二补偿驱动灰阶，G3为第三光源区第三待驱动子像素的第三补偿驱动灰阶，G1为第一光源区第一待驱动子像素的第一补偿驱动灰阶，L2为所述第二待驱动子像素与所述第一待驱动子像素之间的距离，L为所述第一待驱动子像素与所述第三待驱动子像素之间的距离；\n\n[0023]获取拼接区第二待驱动子像素的第二实际驱动灰阶G2；\n\n[0024]使用所述第二实际驱动灰阶G2和所述第二补偿驱动灰阶G2\'得到拼接区补偿系数，所述拼接区补偿系数k＝G2\'/G2。\n\n[0025]在本发明提供的显示面板驱动方法中，所述使用第二公式G2\'＝G1+L22/L2*|G3-G1|确定拼接区第二待驱动子像素的第二补偿驱动灰阶的步骤包括：\n\n[0026]获取第三光源区第三待驱动子像素的第三补偿驱动灰阶G3；\n\n[0027]获取第一光源区第一待驱动子像素的第一补偿驱动灰阶G1；\n\n[0028]获取所述第二待驱动子像素与所述第一待驱动子像素之间的距离L2，\n\n[0029]获取所述第一待驱动子像素与所述第三待驱动子像素之间的距离L；\n\n[0030]得到第二公式G2\'＝G1+L22/L2*|G3-G1|。\n\n[0031]在本发明提供的显示面板驱动方法中，所述获取第三光源区第三待驱动子像素的第三补偿驱动灰阶G3的步骤包括：\n\n[0032]获取第三光源区第三待驱动子像素的第三实际驱动灰阶；\n\n[0033]获取第三待驱动子像素的第三补偿参数；\n\n[0034]根据所述第三实际驱动灰阶和第三补偿参数得到第三补偿驱动灰阶。\n\n[0035]在本发明提供的显示面板驱动方法中，所述获取第一光源区第一待驱动子像素的第一补偿驱动灰阶G1的步骤包括：\n\n[0036]获取第一光源区第一待驱动子像素的第一实际驱动灰阶；\n\n[0037]获取第一待驱动子像素的第一补偿参数；\n\n[0038]根据所述第一实际驱动灰阶和第一补偿参数得到第一补偿驱动灰阶。\n\n[0039]在本发明提供的显示面板驱动方法中，所述调用拼接区补偿系数的步骤包括：\n\n[0040]根据第一光源区的第一待驱动子像素确定第一拼接区补偿系数；\n\n[0041]根据第三光源区的第三待驱动子像素确定第二拼接区补偿系数；\n\n[0042]根据第一拼接区补偿系数和第二拼接区补偿系数确定拼接区补偿系数。\n\n[0043]在本发明提供的显示面板驱动方法中，所述根据补偿像素计算出待驱动子像素的第二驱动灰阶的步骤包括：使用待驱动子像素的第一驱动灰阶与拼接区补偿系数的乘积得出第二驱动灰阶。\n\n[0044]同时，本发明提供一种显示装置，该显示装置包括显示面板和驱动芯片，该驱动芯片用于执行上述任一所述的显示面板驱动方法，以驱动显示面板。\n\n[0045]有益效果：本发明提供一种显示面板驱动方法和显示装置，该显示面板驱动方法包括获取待驱动子像素的第一驱动灰阶；确定待驱动子像素所处区域，并在待驱动子像素位于拼接区时，调用拼接区补偿系数；根据拼接区补偿系数计算出待驱动子像素的第二驱动灰阶；使用所述第二驱动灰阶驱动待驱动子像素；通过对拼接区的待驱动子像素进行补偿，使得拼接区待驱动子像素正常显示，从而消除了拼接处的显示暗线，缓解了现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题。\n\n附图说明\n\n[0046]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0047]图1为现有显示装置示意图；\n\n[0048]图2为本发明实施例提供的显示面板驱动方法的示意图。\n\n具体实施方式\n\n[0049]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0050]本发明针对现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题，本发明实施例用以解决该问题。\n\n[0051]如图1所示，现有显示装置包括背光模组11、阵列基板12、液晶层13、彩膜基板14，所述背光模组11包括第一光源111和第三光源112，所述第一光源111包括多个miniLED1111，所述第三光源包括多个miniLED1121，所述第一光源与所述第三光源拼接在一起，拼接方式根据实际选择胶连，铰链等方式，图1中未示出拼接处连接构件；显示面板包括第一光源区151、第三光源区152，以及位于所述第一光源区151和第三光源区152之间的拼接区153，图1中示出了位于第一光源区151的第一像素的色阻层141、位于第三光源区152的第三像素的色阻层142，以及位于拼接区153的第二像素的色阻层143，从图1中可以看出，由于拼接区不存在光源，使得位于拼接区的第二像素需要通过第一光源和第三光源的扩散光来发光，从而造成第二像素较暗甚至没有光线发出，使得拼接区在显示时呈现暗线，即现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题。\n\n[0052]如图2所示，本发明实施例提供一种显示面板驱动方法，该显示面板驱动方法包括：\n\n[0053]S1，获取待驱动子像素的第一驱动灰阶；\n\n[0054]S2，确定所述待驱动子像素所处区域，并在所述待驱动子像素位于拼接区时，调用拼接区补偿系数；\n\n[0055]S3，根据所述拼接区补偿系数计算出所述待驱动子像素的第二驱动灰阶；\n\n[0056]S4，使用所述第二驱动灰阶驱动所述待驱动子像素。\n\n[0057]本发明实施例提供一种显示面板驱动方法，该显示面板驱动方法包括获取待驱动子像素的第一驱动灰阶；确定待驱动子像素所处区域，并在待驱动子像素位于拼接区时，调用拼接区补偿系数；根据拼接区补偿系数计算出待驱动子像素的第二驱动灰阶；使用所述第二驱动灰阶驱动待驱动子像素；通过对拼接区的待驱动子像素进行补偿，使得拼接区待驱动子像素正常显示，从而消除了拼接处的显示暗线，缓解了现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题。\n\n[0058]在一种实施例中，所述调用拼接区补偿系数的步骤包括：\n\n[0059]使用第一公式G2\'＝G3+L12/L2*|G3-G1|确定拼接区第二待驱动子像素的第二补偿驱动灰阶，其中，G2\'为拼接区第二待驱动像素的第二补偿驱动灰阶，G3为第三光源区第三待驱动子像素的第三补偿驱动灰阶，G1为第一光源区第一待驱动子像素的第一补偿驱动灰阶，L1为所述第二待驱动子像素与所述第三待驱动子像素之间的距离，L为所述第一待驱动子像素与所述第三待驱动子像素之间的距离；\n\n[0060]获取拼接区第二待驱动子像素的第二实际驱动灰阶G2；\n\n[0061]使用所述第二实际驱动灰阶G2和所述第二补偿驱动灰阶G2\'得到拼接区补偿系数，所述拼接区补偿系数k＝G2\'/G2；\n\n[0062]在调用拼接区补偿系数时，需要得到补偿系数，可通过使用第一公式计算出补偿后的拼接区的第二待驱动子像素的第二补偿驱动灰阶，然后根据第二补偿驱动灰阶和第二实际驱动灰阶得到补偿系数；其中，第一公式考虑了第一光源区的第一待驱动子像素的第一补偿驱动灰阶、第三光源区的第三待驱动子像素的第三补偿灰阶，以及第一待驱动子像素与第三待驱动子像素之间的距离、第三待驱动子像素与第二待驱动子像素之间的距离，即最终得到的补偿系数考虑了第一待驱动子像素和第三待驱动子像素的驱动灰阶，且考虑了各个子像素的距离，使得对应各个驱动灰阶，补偿系数都考虑了第一待驱动子像素和第三待驱动子像素的驱动灰阶，从而使得补偿系数较为准确，使得得到的拼接区的第二补偿驱动灰阶准确，从而使得拼接区的显示效果与光源区的显示效果一致，避免暗线的产生。\n\n[0063]需要说明的是，所述拼接区位于所述第一光源区与所述第三光源区之间，所述第一待驱动子像素和第三待驱动子像素分别为第一光源区和第三光源区最靠近拼接区的待驱动子像素，但本发明不限于此，也可使第一待驱动子像素和第三待驱动子像素为其他待驱动子像素。\n\n[0064]在一种实施例中，所述使用第一公式G2\'＝G3+L12/L2*|G3-G1|确定拼接区第二待驱动子像素的第二补偿驱动灰阶的步骤包括：\n\n[0065]获取第三光源区第三待驱动子像素的第三补偿驱动灰阶G3；\n\n[0066]获取第一光源区第一待驱动子像素的第一补偿驱动灰阶G1；\n\n[0067]获取所述第二待驱动子像素与所述第三待驱动子像素之间的距离L1，\n\n[0068]获取所述第一待驱动子像素与所述第三待驱动子像素之间的距离L；\n\n[0069]得到第一公式G2\'＝G3+L12/L2*|G3-G1|；\n\n[0070]为了得到第一公式，需要先获取任一时间段对应的第三光源区第三待驱动子像素的第三补偿驱动灰阶G3、第一光源区第一待驱动子像素的第一补偿驱动灰阶G1、所述第二待驱动子像素与所述第三待驱动子像素之间的距离L1、所述第一待驱动子像素与所述第三待驱动子像素之间的距离L，经过测试可以知道在使用G3+L12/L2*|G3-G1|得到第二待驱动子像素的第二补偿驱动灰阶G2\'时，拼接区的显示效果与光源区的显示效果一致，从而得到第一公式G2\'＝G3+L12/L2*|G3-G1|。\n\n[0071]在一种实施例中，所述调用拼接区补偿系数的步骤包括：\n\n[0072]使用第二公式G2\'＝G1+L22/L2*|G3-G1|确定拼接区第二待驱动子像素的第二补偿驱动灰阶，其中，G2\'为拼接区第二待驱动像素的第二补偿驱动灰阶，G3为第三光源区第三待驱动子像素的第三补偿驱动灰阶，G1为第一光源区第一待驱动子像素的第一补偿驱动灰阶，L2为所述第二待驱动子像素与所述第一待驱动子像素之间的距离，L为所述第一待驱动子像素与所述第三待驱动子像素之间的距离；\n\n[0073]获取拼接区第二待驱动子像素的第二实际驱动灰阶G2；\n\n[0074]使用所述第二实际驱动灰阶G2和所述第二补偿驱动灰阶G2\'得到拼接区补偿系数，所述拼接区补偿系数k＝G2\'/G2；\n\n[0075]在调用拼接区补偿系数时需要得到补偿系数，可通过使用第二公式计算出补偿后的拼接区的第二待驱动子像素的第二补偿驱动灰阶，然后根据第二补偿驱动灰阶和第二实际驱动灰阶得到补偿系数，其中，第二公式考虑了第一光源区的第一待驱动子像素的第一补偿驱动灰阶、第三光源区的第三待驱动子像素的第三补偿灰阶，以及第一待驱动子像素与第三待驱动子像素之间的距离、以及第一待驱动子像素与第二待驱动子像素之间的距离，即以第一待驱动子像素为主要因子，同时考虑第一待驱动子像素和第三待驱动子像素，使得得到的第二待驱动子像素的第二补偿驱动灰阶与所述第一待驱动子像素的第一补偿驱动灰阶和第三待驱动子像素的第三补偿驱动灰阶相关，从而在显示时第二待驱动子像素的显示效果与第一待驱动子像素和第三待驱动子像素相近，从而避免了暗线的产生。\n\n[0076]在一种实施例中，所述使用第二公式G2\'＝G1+L22/L2*|G3-G1|确定拼接区第二待驱动子像素的第二补偿驱动灰阶的步骤包括：\n\n[0077]获取第三光源区第三待驱动子像素的第三补偿驱动灰阶G3；\n\n[0078]获取第一光源区第一待驱动子像素的第一补偿驱动灰阶G1；\n\n[0079]获取所述第二待驱动子像素与所述第一待驱动子像素之间的距离L2，\n\n[0080]获取所述第一待驱动子像素与所述第三待驱动子像素之间的距离L；\n\n[0081]得到第二公式G2\'＝G1+L22/L2*|G3-G1|；\n\n[0082]为了得到第二公式，使得根据第二公式得到的第二补偿驱动灰阶与第一补偿驱动灰阶和第三补偿驱动灰阶相关，从而使得第二待驱动子像素与第一待驱动子像素和第三待驱动子像素显示效果一致，可先获取任一时间段对应第三光源区第三待驱动子像素的第三补偿驱动灰阶G3、第一光源区第一待驱动子像素的第一补偿驱动灰阶G1、所述第二待驱动子像素与所述第一待驱动子像素之间的距离L2、所述第一待驱动子像素与所述第三待驱动子像素之间的距离L，在得到第一待驱动子像素和第三待驱动子像素的相关参数后，经过测试可以得知在使用G1+L22/L2*|G3-G1|得到第二待驱动子像素的第二补偿驱动灰阶G2\'时，拼接区的显示效果与光源区的显示效果一致，从而得到第二公式G2\'＝G1+L22/L2*|G3-G1|。\n\n[0083]在一种实施例中，所述获取第三光源区第三待驱动子像素的第三补偿驱动灰阶G3的步骤包括：\n\n[0084]获取第三光源区第三待驱动子像素的第三实际驱动灰阶；\n\n[0085]获取第三待驱动子像素的第三补偿参数；\n\n[0086]根据所述第三实际驱动灰阶和第三补偿参数得到第三补偿驱动灰阶；\n\n[0087]在获取第三待驱动子像素的第三补偿驱动灰阶时，要先获取第三待驱动子像素的第三实际驱动灰阶，即第三待驱动子像素实际的驱动灰阶，然后获取第三待驱动子像素的第三补偿参数，该参数为补偿第三待驱动子像素在驱动过程由于电路损耗造成的灰阶损失，根据第三实际驱动灰阶和第三补偿参数得到第三补偿驱动灰阶，即得到最终使得第三待驱动子像素显示效果最好的驱动灰阶。\n\n[0088]在一种实施例中，所述获取第一光源区第一待驱动子像素的第一补偿驱动灰阶G1的步骤包括：\n\n[0089]获取第一光源区第一待驱动子像素的第一实际驱动灰阶；\n\n[0090]获取第一待驱动子像素的第一补偿参数；\n\n[0091]根据所述第一实际驱动灰阶和第一补偿参数得到第一补偿驱动灰阶；\n\n[0092]在获取第一待驱动子像素的第一补偿驱动灰阶时，需要先获取第一待驱动子像素的第一实际驱动灰阶，然后根据对应第一待驱动子像素的第一补偿参数，得到使第一待驱动子像素正常显示的第一补偿驱动灰阶。\n\n[0093]在一种实施例中，所述调用拼接区补偿系数的步骤包括：\n\n[0094]根据第一光源区的第一待驱动子像素确定第一拼接区补偿系数；\n\n[0095]根据第三光源区的第三待驱动子像素确定第二拼接区补偿系数；\n\n[0096]根据第一拼接区补偿系数和第二拼接区补偿系数确定拼接区补偿系数；\n\n[0097]在得到拼接区补偿系数时，可分别以第一待驱动子像素为基准确定第一拼接区补偿系数、以第三待驱动子像素为基准确定第二拼接区补偿系数，然后根据第一拼接区补偿系数和第二拼接区补偿系数确定拼接区补偿系数，得到的拼接区补偿系数考虑了第一待驱动子像素和第二待驱动子像素，从而使得得到的拼接区补偿系数较为准确。\n\n[0098]在一种实施例中，所述根据拼接区补偿系数计算出待驱动子像素的第二驱动灰阶的步骤包括：使用待驱动子像素的第一驱动灰阶与拼接区补偿系数的乘积得出第二驱动灰阶；在实际驱动时，可使得拼接区补偿系数与第一驱动灰阶相乘得到第二驱动灰阶，从而对拼接区待驱动子像素进行补偿，使得拼接区待驱动子像素正常显示。\n\n[0099]在一种实施例中，所述获取待驱动子像素的第一驱动灰阶的步骤还包括：获取待驱动像素的第三驱动灰阶。\n\n[0100]在一种实施例中，所述确定所述待驱动子像素所处区域，并在所述待驱动子像素位于拼接区时，调用拼接区补偿系数的步骤还包括：确定所述待驱动像素所处区域，并在所述待驱动像素位于拼接区时，调用拼接区补偿系数。\n\n[0101]在一种实施例中，所述根据所述拼接区补偿系数计算出所述待驱动子像素的第二驱动灰阶的步骤还包括：根据所述拼接区补偿系数计算出所述待驱动像素的第四驱动灰阶。\n\n[0102]在一种实施例中，所述使用所述第二驱动灰阶驱动所述待驱动子像素的步骤还包括：使用所述第四驱动灰阶驱动所述待驱动像素。\n\n[0103]在一种实施例中，所述调用拼接区补偿系数的步骤包括：\n\n[0104]使用第一公式G2\'＝G3+L12/L2*|G3-G1|确定拼接区第二待驱动子像素的第二补偿驱动灰阶，其中，G2\'为拼接区第二待驱动像素的第二补偿驱动灰阶，G3为第三光源区第三待驱动子像素的第三补偿驱动灰阶，G1为第一光源区第一待驱动子像素的第一补偿驱动灰阶，L1为所述第二待驱动子像素与所述第三待驱动子像素之间的距离，L为所述第一待驱动子像素与所述第三待驱动子像素之间的距离；\n\n[0105]获取拼接区第二待驱动子像素的第二实际驱动灰阶G2；\n\n[0106]使用所述第二实际驱动灰阶G2和所述第二补偿驱动灰阶G2\'得到拼接区补偿系数，所述拼接区补偿系数k＝G2\'/G2。\n\n[0107]在一种实施例中，所述使用第一公式G2\'＝G3+L12/L2*|G3-G1|确定拼接区第二待驱动子像素的第二补偿驱动灰阶的步骤包括：\n\n[0108]获取第三光源区第三待驱动子像素的第三补偿驱动灰阶G3；\n\n[0109]获取第一光源区第一待驱动子像素的第一补偿驱动灰阶G1；\n\n[0110]获取所述第二待驱动子像素与所述第三待驱动子像素之间的距离L1，\n\n[0111]获取所述第一待驱动子像素与所述第三待驱动子像素之间的距离L；\n\n[0112]得到第一公式G2\'＝G3+L12/L2*|G3-G1|。\n\n[0113]在一种实施例中，所述调用拼接区补偿系数的步骤包括：\n\n[0114]使用第二公式G2\'＝G1+L22/L2*|G3-G1|确定拼接区第二待驱动子像素的第二补偿驱动灰阶，其中，G2\'为拼接区第二待驱动像素的第二补偿驱动灰阶，G3为第三光源区第三待驱动子像素的第三补偿驱动灰阶，G1为第一光源区第一待驱动子像素的第一补偿驱动灰阶，L2为所述第二待驱动子像素与所述第一待驱动子像素之间的距离，L为所述第一待驱动子像素与所述第三待驱动子像素之间的距离；\n\n[0115]获取拼接区第二待驱动子像素的第二实际驱动灰阶G2；\n\n[0116]使用所述第二实际驱动灰阶G2和所述第二补偿驱动灰阶G2\'得到拼接区补偿系数，所述拼接区补偿系数k＝G2\'/G2。\n\n[0117]在一种实施例中，所述使用第二公式G2\'＝G1+L22/L2*|G3-G1|确定拼接区第二待驱动子像素的第二补偿驱动灰阶的步骤包括：\n\n[0118]获取第三光源区第三待驱动子像素的第三补偿驱动灰阶G3；\n\n[0119]获取第一光源区第一待驱动子像素的第一补偿驱动灰阶G1；\n\n[0120]获取所述第二待驱动子像素与所述第一待驱动子像素之间的距离L2，\n\n[0121]获取所述第一待驱动子像素与所述第三待驱动子像素之间的距离L；\n\n[0122]得到第二公式G2\'＝G1+L22/L2*|G3-G1|。\n\n[0123]在一种实施例中，所述获取第三光源区第三待驱动子像素的第三补偿驱动灰阶G3的步骤包括：\n\n[0124]获取第三光源区第三待驱动子像素的第三实际驱动灰阶；\n\n[0125]获取第三待驱动子像素的第三补偿参数；\n\n[0126]根据所述第三实际驱动灰阶和第三补偿参数得到第三补偿驱动灰阶。\n\n[0127]在一种实施例中，所述获取第一光源区第一待驱动子像素的第一补偿驱动灰阶G1的步骤包括：\n\n[0128]获取第一光源区第一待驱动子像素的第一实际驱动灰阶；\n\n[0129]获取第一待驱动子像素的第一补偿参数；\n\n[0130]根据所述第一实际驱动灰阶和第一补偿参数得到第一补偿驱动灰阶。\n\n[0131]本发明实施例提供一种显示装置，该显示装置包括：\n\n[0132]显示面板；\n\n[0133]驱动芯片，用于执行上述实施例任一所述的显示面板驱动方法，以驱动显示面板。\n\n[0134]根据以上实施例可知：\n\n[0135]本发明实施例提供一种显示面板驱动方法和显示装置，该显示面板驱动方法包括获取待驱动子像素的第一驱动灰阶；确定待驱动子像素所处区域，并在待驱动子像素位于拼接区时，调用拼接区补偿系数；根据拼接区补偿系数计算出待驱动子像素的第二驱动灰阶；使用所述第二驱动灰阶驱动待驱动子像素；通过对拼接区的待驱动子像素进行补偿，使得拼接区待驱动子像素正常显示，从而消除了拼接处的显示暗线，缓解了现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题。\n\n[0136]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其是涉及一种显示面板驱动方法和显示装置。\n\n背景技术\n\n[0002]现有miniLED由于具有高亮、高对比度、可实现局部调光、可弯曲、窄边框等优点，作为直下式背光源广泛应用，但随着显示器件的尺寸增大，使得需要拼接miniLED作为背光源、而对于拼接的背光源、在miniLED的拼接处会存在较明显的拼接缝隙，在显示器件显示时，会在拼接处呈现处拼接暗线，影响显示效果。\n\n[0003]所以，现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题。\n\n发明内容\n\n[0004]本发明提供一种显示面板驱动方法和显示装置，用于缓解现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题。\n\n[0005]为解决上述问题，本发明提供的技术方案如下：\n\n[0006]本发明提供一种显示面板驱动方法，该显示面板驱动方法包括：\n\n[0007]获取待驱动子像素的第一驱动灰阶；\n\n[0008]确定所述待驱动子像素所处区域，并在所述待驱动子像素位于拼接区时，调用拼接区补偿系数；\n\n[0009]根据所述拼接区补偿系数计算出所述待驱动子像素的第二驱动灰阶；\n\n[0010]使用所述第二驱动灰阶驱动所述待驱动子像素。\n\n[0011]在本发明提供的显示面板驱动方法中，所述调用拼接区补偿系数的步骤包括：\n\n[0012]使用第一公式G2\'＝G3+L12/L2*|G3-G1|确定拼接区第二待驱动子像素的第二补偿驱动灰阶，其中，G2\'为拼接区第二待驱动像素的第二补偿驱动灰阶，G3为第三光源区第三待驱动子像素的第三补偿驱动灰阶，G1为第一光源区第一待驱动子像素的第一补偿驱动灰阶，L1为所述第二待驱动子像素与所述第三待驱动子像素之间的距离，L为所述第一待驱动子像素与所述第三待驱动子像素之间的距离；\n\n[0013]获取拼接区第二待驱动子像素的第二实际驱动灰阶G2；\n\n[0014]使用所述第二实际驱动灰阶G2和所述第二补偿驱动灰阶G2\'得到拼接区补偿系数，所述拼接区补偿系数k＝G2\'/G2。\n\n[0015]在本发明提供的显示面板驱动方法中，所述使用第一公式G2\'＝G3+L12/L2*|G3-G1|确定拼接区第二待驱动子像素的第二补偿驱动灰阶的步骤包括：\n\n[0016]获取第三光源区第三待驱动子像素的第三补偿驱动灰阶G3；\n\n[0017]获取第一光源区第一待驱动子像素的第一补偿驱动灰阶G1；\n\n[0018]获取所述第二待驱动子像素与所述第三待驱动子像素之间的距离L1，\n\n[0019]获取所述第一待驱动子像素与所述第三待驱动子像素之间的距离L；\n\n[0020]得到第一公式G2\'＝G3+L12/L2*|G3-G1|。\n\n[0021]在本发明提供的显示面板驱动方法中，所述调用拼接区补偿系数的步骤包括：\n\n[0022]使用第二公式G2\'＝G1+L22/L2*|G3-G1|确定拼接区第二待驱动子像素的第二补偿驱动灰阶，其中，G2\'为拼接区第二待驱动像素的第二补偿驱动灰阶，G3为第三光源区第三待驱动子像素的第三补偿驱动灰阶，G1为第一光源区第一待驱动子像素的第一补偿驱动灰阶，L2为所述第二待驱动子像素与所述第一待驱动子像素之间的距离，L为所述第一待驱动子像素与所述第三待驱动子像素之间的距离；\n\n[0023]获取拼接区第二待驱动子像素的第二实际驱动灰阶G2；\n\n[0024]使用所述第二实际驱动灰阶G2和所述第二补偿驱动灰阶G2\'得到拼接区补偿系数，所述拼接区补偿系数k＝G2\'/G2。\n\n[0025]在本发明提供的显示面板驱动方法中，所述使用第二公式G2\'＝G1+L22/L2*|G3-G1|确定拼接区第二待驱动子像素的第二补偿驱动灰阶的步骤包括：\n\n[0026]获取第三光源区第三待驱动子像素的第三补偿驱动灰阶G3；\n\n[0027]获取第一光源区第一待驱动子像素的第一补偿驱动灰阶G1；\n\n[0028]获取所述第二待驱动子像素与所述第一待驱动子像素之间的距离L2，\n\n[0029]获取所述第一待驱动子像素与所述第三待驱动子像素之间的距离L；\n\n[0030]得到第二公式G2\'＝G1+L22/L2*|G3-G1|。\n\n[0031]在本发明提供的显示面板驱动方法中，所述获取第三光源区第三待驱动子像素的第三补偿驱动灰阶G3的步骤包括：\n\n[0032]获取第三光源区第三待驱动子像素的第三实际驱动灰阶；\n\n[0033]获取第三待驱动子像素的第三补偿参数；\n\n[0034]根据所述第三实际驱动灰阶和第三补偿参数得到第三补偿驱动灰阶。\n\n[0035]在本发明提供的显示面板驱动方法中，所述获取第一光源区第一待驱动子像素的第一补偿驱动灰阶G1的步骤包括：\n\n[0036]获取第一光源区第一待驱动子像素的第一实际驱动灰阶；\n\n[0037]获取第一待驱动子像素的第一补偿参数；\n\n[0038]根据所述第一实际驱动灰阶和第一补偿参数得到第一补偿驱动灰阶。\n\n[0039]在本发明提供的显示面板驱动方法中，所述调用拼接区补偿系数的步骤包括：\n\n[0040]根据第一光源区的第一待驱动子像素确定第一拼接区补偿系数；\n\n[0041]根据第三光源区的第三待驱动子像素确定第二拼接区补偿系数；\n\n[0042]根据第一拼接区补偿系数和第二拼接区补偿系数确定拼接区补偿系数。\n\n[0043]在本发明提供的显示面板驱动方法中，所述根据补偿像素计算出待驱动子像素的第二驱动灰阶的步骤包括：使用待驱动子像素的第一驱动灰阶与拼接区补偿系数的乘积得出第二驱动灰阶。\n\n[0044]同时，本发明提供一种显示装置，该显示装置包括显示面板和驱动芯片，该驱动芯片用于执行上述任一所述的显示面板驱动方法，以驱动显示面板。\n\n[0045]有益效果：本发明提供一种显示面板驱动方法和显示装置，该显示面板驱动方法包括获取待驱动子像素的第一驱动灰阶；确定待驱动子像素所处区域，并在待驱动子像素位于拼接区时，调用拼接区补偿系数；根据拼接区补偿系数计算出待驱动子像素的第二驱动灰阶；使用所述第二驱动灰阶驱动待驱动子像素；通过对拼接区的待驱动子像素进行补偿，使得拼接区待驱动子像素正常显示，从而消除了拼接处的显示暗线，缓解了现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题。\n\n附图说明\n\n[0046]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0047]图1为现有显示装置示意图；\n\n[0048]图2为本发明实施例提供的显示面板驱动方法的示意图。\n\n具体实施方式\n\n[0049]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0050]本发明针对现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题，本发明实施例用以解决该问题。\n\n[0051]如图1所示，现有显示装置包括背光模组11、阵列基板12、液晶层13、彩膜基板14，所述背光模组11包括第一光源111和第三光源112，所述第一光源111包括多个miniLED1111，所述第三光源包括多个miniLED1121，所述第一光源与所述第三光源拼接在一起，拼接方式根据实际选择胶连，铰链等方式，图1中未示出拼接处连接构件；显示面板包括第一光源区151、第三光源区152，以及位于所述第一光源区151和第三光源区152之间的拼接区153，图1中示出了位于第一光源区151的第一像素的色阻层141、位于第三光源区152的第三像素的色阻层142，以及位于拼接区153的第二像素的色阻层143，从图1中可以看出，由于拼接区不存在光源，使得位于拼接区的第二像素需要通过第一光源和第三光源的扩散光来发光，从而造成第二像素较暗甚至没有光线发出，使得拼接区在显示时呈现暗线，即现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题。\n\n[0052]如图2所示，本发明实施例提供一种显示面板驱动方法，该显示面板驱动方法包括：\n\n[0053]S1，获取待驱动子像素的第一驱动灰阶；\n\n[0054]S2，确定所述待驱动子像素所处区域，并在所述待驱动子像素位于拼接区时，调用拼接区补偿系数；\n\n[0055]S3，根据所述拼接区补偿系数计算出所述待驱动子像素的第二驱动灰阶；\n\n[0056]S4，使用所述第二驱动灰阶驱动所述待驱动子像素。\n\n[0057]本发明实施例提供一种显示面板驱动方法，该显示面板驱动方法包括获取待驱动子像素的第一驱动灰阶；确定待驱动子像素所处区域，并在待驱动子像素位于拼接区时，调用拼接区补偿系数；根据拼接区补偿系数计算出待驱动子像素的第二驱动灰阶；使用所述第二驱动灰阶驱动待驱动子像素；通过对拼接区的待驱动子像素进行补偿，使得拼接区待驱动子像素正常显示，从而消除了拼接处的显示暗线，缓解了现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题。\n\n[0058]在一种实施例中，所述调用拼接区补偿系数的步骤包括：\n\n[0059]使用第一公式G2\'＝G3+L12/L2*|G3-G1|确定拼接区第二待驱动子像素的第二补偿驱动灰阶，其中，G2\'为拼接区第二待驱动像素的第二补偿驱动灰阶，G3为第三光源区第三待驱动子像素的第三补偿驱动灰阶，G1为第一光源区第一待驱动子像素的第一补偿驱动灰阶，L1为所述第二待驱动子像素与所述第三待驱动子像素之间的距离，L为所述第一待驱动子像素与所述第三待驱动子像素之间的距离；\n\n[0060]获取拼接区第二待驱动子像素的第二实际驱动灰阶G2；\n\n[0061]使用所述第二实际驱动灰阶G2和所述第二补偿驱动灰阶G2\'得到拼接区补偿系数，所述拼接区补偿系数k＝G2\'/G2；\n\n[0062]在调用拼接区补偿系数时，需要得到补偿系数，可通过使用第一公式计算出补偿后的拼接区的第二待驱动子像素的第二补偿驱动灰阶，然后根据第二补偿驱动灰阶和第二实际驱动灰阶得到补偿系数；其中，第一公式考虑了第一光源区的第一待驱动子像素的第一补偿驱动灰阶、第三光源区的第三待驱动子像素的第三补偿灰阶，以及第一待驱动子像素与第三待驱动子像素之间的距离、第三待驱动子像素与第二待驱动子像素之间的距离，即最终得到的补偿系数考虑了第一待驱动子像素和第三待驱动子像素的驱动灰阶，且考虑了各个子像素的距离，使得对应各个驱动灰阶，补偿系数都考虑了第一待驱动子像素和第三待驱动子像素的驱动灰阶，从而使得补偿系数较为准确，使得得到的拼接区的第二补偿驱动灰阶准确，从而使得拼接区的显示效果与光源区的显示效果一致，避免暗线的产生。\n\n[0063]需要说明的是，所述拼接区位于所述第一光源区与所述第三光源区之间，所述第一待驱动子像素和第三待驱动子像素分别为第一光源区和第三光源区最靠近拼接区的待驱动子像素，但本发明不限于此，也可使第一待驱动子像素和第三待驱动子像素为其他待驱动子像素。\n\n[0064]在一种实施例中，所述使用第一公式G2\'＝G3+L12/L2*|G3-G1|确定拼接区第二待驱动子像素的第二补偿驱动灰阶的步骤包括：\n\n[0065]获取第三光源区第三待驱动子像素的第三补偿驱动灰阶G3；\n\n[0066]获取第一光源区第一待驱动子像素的第一补偿驱动灰阶G1；\n\n[0067]获取所述第二待驱动子像素与所述第三待驱动子像素之间的距离L1，\n\n[0068]获取所述第一待驱动子像素与所述第三待驱动子像素之间的距离L；\n\n[0069]得到第一公式G2\'＝G3+L12/L2*|G3-G1|；\n\n[0070]为了得到第一公式，需要先获取任一时间段对应的第三光源区第三待驱动子像素的第三补偿驱动灰阶G3、第一光源区第一待驱动子像素的第一补偿驱动灰阶G1、所述第二待驱动子像素与所述第三待驱动子像素之间的距离L1、所述第一待驱动子像素与所述第三待驱动子像素之间的距离L，经过测试可以知道在使用G3+L12/L2*|G3-G1|得到第二待驱动子像素的第二补偿驱动灰阶G2\'时，拼接区的显示效果与光源区的显示效果一致，从而得到第一公式G2\'＝G3+L12/L2*|G3-G1|。\n\n[0071]在一种实施例中，所述调用拼接区补偿系数的步骤包括：\n\n[0072]使用第二公式G2\'＝G1+L22/L2*|G3-G1|确定拼接区第二待驱动子像素的第二补偿驱动灰阶，其中，G2\'为拼接区第二待驱动像素的第二补偿驱动灰阶，G3为第三光源区第三待驱动子像素的第三补偿驱动灰阶，G1为第一光源区第一待驱动子像素的第一补偿驱动灰阶，L2为所述第二待驱动子像素与所述第一待驱动子像素之间的距离，L为所述第一待驱动子像素与所述第三待驱动子像素之间的距离；\n\n[0073]获取拼接区第二待驱动子像素的第二实际驱动灰阶G2；\n\n[0074]使用所述第二实际驱动灰阶G2和所述第二补偿驱动灰阶G2\'得到拼接区补偿系数，所述拼接区补偿系数k＝G2\'/G2；\n\n[0075]在调用拼接区补偿系数时需要得到补偿系数，可通过使用第二公式计算出补偿后的拼接区的第二待驱动子像素的第二补偿驱动灰阶，然后根据第二补偿驱动灰阶和第二实际驱动灰阶得到补偿系数，其中，第二公式考虑了第一光源区的第一待驱动子像素的第一补偿驱动灰阶、第三光源区的第三待驱动子像素的第三补偿灰阶，以及第一待驱动子像素与第三待驱动子像素之间的距离、以及第一待驱动子像素与第二待驱动子像素之间的距离，即以第一待驱动子像素为主要因子，同时考虑第一待驱动子像素和第三待驱动子像素，使得得到的第二待驱动子像素的第二补偿驱动灰阶与所述第一待驱动子像素的第一补偿驱动灰阶和第三待驱动子像素的第三补偿驱动灰阶相关，从而在显示时第二待驱动子像素的显示效果与第一待驱动子像素和第三待驱动子像素相近，从而避免了暗线的产生。\n\n[0076]在一种实施例中，所述使用第二公式G2\'＝G1+L22/L2*|G3-G1|确定拼接区第二待驱动子像素的第二补偿驱动灰阶的步骤包括：\n\n[0077]获取第三光源区第三待驱动子像素的第三补偿驱动灰阶G3；\n\n[0078]获取第一光源区第一待驱动子像素的第一补偿驱动灰阶G1；\n\n[0079]获取所述第二待驱动子像素与所述第一待驱动子像素之间的距离L2，\n\n[0080]获取所述第一待驱动子像素与所述第三待驱动子像素之间的距离L；\n\n[0081]得到第二公式G2\'＝G1+L22/L2*|G3-G1|；\n\n[0082]为了得到第二公式，使得根据第二公式得到的第二补偿驱动灰阶与第一补偿驱动灰阶和第三补偿驱动灰阶相关，从而使得第二待驱动子像素与第一待驱动子像素和第三待驱动子像素显示效果一致，可先获取任一时间段对应第三光源区第三待驱动子像素的第三补偿驱动灰阶G3、第一光源区第一待驱动子像素的第一补偿驱动灰阶G1、所述第二待驱动子像素与所述第一待驱动子像素之间的距离L2、所述第一待驱动子像素与所述第三待驱动子像素之间的距离L，在得到第一待驱动子像素和第三待驱动子像素的相关参数后，经过测试可以得知在使用G1+L22/L2*|G3-G1|得到第二待驱动子像素的第二补偿驱动灰阶G2\'时，拼接区的显示效果与光源区的显示效果一致，从而得到第二公式G2\'＝G1+L22/L2*|G3-G1|。\n\n[0083]在一种实施例中，所述获取第三光源区第三待驱动子像素的第三补偿驱动灰阶G3的步骤包括：\n\n[0084]获取第三光源区第三待驱动子像素的第三实际驱动灰阶；\n\n[0085]获取第三待驱动子像素的第三补偿参数；\n\n[0086]根据所述第三实际驱动灰阶和第三补偿参数得到第三补偿驱动灰阶；\n\n[0087]在获取第三待驱动子像素的第三补偿驱动灰阶时，要先获取第三待驱动子像素的第三实际驱动灰阶，即第三待驱动子像素实际的驱动灰阶，然后获取第三待驱动子像素的第三补偿参数，该参数为补偿第三待驱动子像素在驱动过程由于电路损耗造成的灰阶损失，根据第三实际驱动灰阶和第三补偿参数得到第三补偿驱动灰阶，即得到最终使得第三待驱动子像素显示效果最好的驱动灰阶。\n\n[0088]在一种实施例中，所述获取第一光源区第一待驱动子像素的第一补偿驱动灰阶G1的步骤包括：\n\n[0089]获取第一光源区第一待驱动子像素的第一实际驱动灰阶；\n\n[0090]获取第一待驱动子像素的第一补偿参数；\n\n[0091]根据所述第一实际驱动灰阶和第一补偿参数得到第一补偿驱动灰阶；\n\n[0092]在获取第一待驱动子像素的第一补偿驱动灰阶时，需要先获取第一待驱动子像素的第一实际驱动灰阶，然后根据对应第一待驱动子像素的第一补偿参数，得到使第一待驱动子像素正常显示的第一补偿驱动灰阶。\n\n[0093]在一种实施例中，所述调用拼接区补偿系数的步骤包括：\n\n[0094]根据第一光源区的第一待驱动子像素确定第一拼接区补偿系数；\n\n[0095]根据第三光源区的第三待驱动子像素确定第二拼接区补偿系数；\n\n[0096]根据第一拼接区补偿系数和第二拼接区补偿系数确定拼接区补偿系数；\n\n[0097]在得到拼接区补偿系数时，可分别以第一待驱动子像素为基准确定第一拼接区补偿系数、以第三待驱动子像素为基准确定第二拼接区补偿系数，然后根据第一拼接区补偿系数和第二拼接区补偿系数确定拼接区补偿系数，得到的拼接区补偿系数考虑了第一待驱动子像素和第二待驱动子像素，从而使得得到的拼接区补偿系数较为准确。\n\n[0098]在一种实施例中，所述根据拼接区补偿系数计算出待驱动子像素的第二驱动灰阶的步骤包括：使用待驱动子像素的第一驱动灰阶与拼接区补偿系数的乘积得出第二驱动灰阶；在实际驱动时，可使得拼接区补偿系数与第一驱动灰阶相乘得到第二驱动灰阶，从而对拼接区待驱动子像素进行补偿，使得拼接区待驱动子像素正常显示。\n\n[0099]在一种实施例中，所述获取待驱动子像素的第一驱动灰阶的步骤还包括：获取待驱动像素的第三驱动灰阶。\n\n[0100]在一种实施例中，所述确定所述待驱动子像素所处区域，并在所述待驱动子像素位于拼接区时，调用拼接区补偿系数的步骤还包括：确定所述待驱动像素所处区域，并在所述待驱动像素位于拼接区时，调用拼接区补偿系数。\n\n[0101]在一种实施例中，所述根据所述拼接区补偿系数计算出所述待驱动子像素的第二驱动灰阶的步骤还包括：根据所述拼接区补偿系数计算出所述待驱动像素的第四驱动灰阶。\n\n[0102]在一种实施例中，所述使用所述第二驱动灰阶驱动所述待驱动子像素的步骤还包括：使用所述第四驱动灰阶驱动所述待驱动像素。\n\n[0103]在一种实施例中，所述调用拼接区补偿系数的步骤包括：\n\n[0104]使用第一公式G2\'＝G3+L12/L2*|G3-G1|确定拼接区第二待驱动子像素的第二补偿驱动灰阶，其中，G2\'为拼接区第二待驱动像素的第二补偿驱动灰阶，G3为第三光源区第三待驱动子像素的第三补偿驱动灰阶，G1为第一光源区第一待驱动子像素的第一补偿驱动灰阶，L1为所述第二待驱动子像素与所述第三待驱动子像素之间的距离，L为所述第一待驱动子像素与所述第三待驱动子像素之间的距离；\n\n[0105]获取拼接区第二待驱动子像素的第二实际驱动灰阶G2；\n\n[0106]使用所述第二实际驱动灰阶G2和所述第二补偿驱动灰阶G2\'得到拼接区补偿系数，所述拼接区补偿系数k＝G2\'/G2。\n\n[0107]在一种实施例中，所述使用第一公式G2\'＝G3+L12/L2*|G3-G1|确定拼接区第二待驱动子像素的第二补偿驱动灰阶的步骤包括：\n\n[0108]获取第三光源区第三待驱动子像素的第三补偿驱动灰阶G3；\n\n[0109]获取第一光源区第一待驱动子像素的第一补偿驱动灰阶G1；\n\n[0110]获取所述第二待驱动子像素与所述第三待驱动子像素之间的距离L1，\n\n[0111]获取所述第一待驱动子像素与所述第三待驱动子像素之间的距离L；\n\n[0112]得到第一公式G2\'＝G3+L12/L2*|G3-G1|。\n\n[0113]在一种实施例中，所述调用拼接区补偿系数的步骤包括：\n\n[0114]使用第二公式G2\'＝G1+L22/L2*|G3-G1|确定拼接区第二待驱动子像素的第二补偿驱动灰阶，其中，G2\'为拼接区第二待驱动像素的第二补偿驱动灰阶，G3为第三光源区第三待驱动子像素的第三补偿驱动灰阶，G1为第一光源区第一待驱动子像素的第一补偿驱动灰阶，L2为所述第二待驱动子像素与所述第一待驱动子像素之间的距离，L为所述第一待驱动子像素与所述第三待驱动子像素之间的距离；\n\n[0115]获取拼接区第二待驱动子像素的第二实际驱动灰阶G2；\n\n[0116]使用所述第二实际驱动灰阶G2和所述第二补偿驱动灰阶G2\'得到拼接区补偿系数，所述拼接区补偿系数k＝G2\'/G2。\n\n[0117]在一种实施例中，所述使用第二公式G2\'＝G1+L22/L2*|G3-G1|确定拼接区第二待驱动子像素的第二补偿驱动灰阶的步骤包括：\n\n[0118]获取第三光源区第三待驱动子像素的第三补偿驱动灰阶G3；\n\n[0119]获取第一光源区第一待驱动子像素的第一补偿驱动灰阶G1；\n\n[0120]获取所述第二待驱动子像素与所述第一待驱动子像素之间的距离L2，\n\n[0121]获取所述第一待驱动子像素与所述第三待驱动子像素之间的距离L；\n\n[0122]得到第二公式G2\'＝G1+L22/L2*|G3-G1|。\n\n[0123]在一种实施例中，所述获取第三光源区第三待驱动子像素的第三补偿驱动灰阶G3的步骤包括：\n\n[0124]获取第三光源区第三待驱动子像素的第三实际驱动灰阶；\n\n[0125]获取第三待驱动子像素的第三补偿参数；\n\n[0126]根据所述第三实际驱动灰阶和第三补偿参数得到第三补偿驱动灰阶。\n\n[0127]在一种实施例中，所述获取第一光源区第一待驱动子像素的第一补偿驱动灰阶G1的步骤包括：\n\n[0128]获取第一光源区第一待驱动子像素的第一实际驱动灰阶；\n\n[0129]获取第一待驱动子像素的第一补偿参数；\n\n[0130]根据所述第一实际驱动灰阶和第一补偿参数得到第一补偿驱动灰阶。\n\n[0131]本发明实施例提供一种显示装置，该显示装置包括：\n\n[0132]显示面板；\n\n[0133]驱动芯片，用于执行上述实施例任一所述的显示面板驱动方法，以驱动显示面板。\n\n[0134]根据以上实施例可知：\n\n[0135]本发明实施例提供一种显示面板驱动方法和显示装置，该显示面板驱动方法包括获取待驱动子像素的第一驱动灰阶；确定待驱动子像素所处区域，并在待驱动子像素位于拼接区时，调用拼接区补偿系数；根据拼接区补偿系数计算出待驱动子像素的第二驱动灰阶；使用所述第二驱动灰阶驱动待驱动子像素；通过对拼接区的待驱动子像素进行补偿，使得拼接区待驱动子像素正常显示，从而消除了拼接处的显示暗线，缓解了现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题。\n\n[0136]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10694, 23748, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示装置的驱动方法。\n\n背景技术\n\n[0002]随着显示技术的发展，有机发光二极管(Organic Light Emitting Display，OLED)显示装置、迷你发光二极管(Mini Light Emitting Display，Mini-LED)显示装置及微发光二极管(Micro Light Emitting Display，Micro-LED)显示装置等自发光显示装置已经越来越多，被业界公认为是最有发展潜力的显示装置。\n\n[0003]上述自发光显示装置具有呈阵列式排布的多个像素，通过像素驱动电路驱动发光单元发光。常见的像素驱动电路如图1所示，包括一开关薄膜晶体管T10、一驱动薄膜晶体管T20、一存储电容C10、以及一发光单元D，驱动方法有模拟驱动方法及数字驱动方法，采用模拟驱动方法时，由于驱动薄膜晶体管T20长时间工作在饱和区会造成其阈值电压(Vth)发生漂移，导致面板显示画面产生亮度不均匀，影响显示效果，发光单元D根据需要可以为OLED，Mini-LED或Mico-LED\n\n[0004]而在自发光显示装置的数字驱动方法中，驱动薄膜晶体管T20的栅极仅输出两个伽马(Gamma)电压准位，分别为：使得有机发光二级管最亮的最高伽马Gamma准位(GM1)和使得发光单元最暗的最低Gamma准位(GM9)，按照晶体管电流电压I-V方程：\n\n[0005]Ids,sat＝k*(Vgs-Vth)2＝k*(VA-VB-Vth)2\n\n[0006]其中，Ids,sat为晶体管导通电流，k为本征导电因子，Vgs为驱动薄膜晶体管T20的栅源极电压，Vth为驱动薄膜晶体管T20的阈值电压，VA为驱动薄膜晶体管T20的栅极电压，VB为驱动薄膜晶体管T20的源极电压。\n\n[0007]如图2所示，在子场非等切的数字驱动方式中，正常的一个帧被切成多个子场(Subframe，SF)，子场的时间权重按照1：进行驱动，通过控制子场的亮暗产生脉冲宽度调制(Pulse width modulation，PWM)亮度信号，结合人眼对亮度感知的时间上积分原理，可使用数位电压(GM1和GM9)来显示不同灰阶亮度影像，但该方法在显示时容易出现闪烁问题，并在低灰阶时尤为明显，为了解决上述的闪烁问题时，现有技术会使用灰阶打散的方式，将原有的低权重子场拆分几个更小的子场，并插入到其他子场中间，以避免闪烁，但增加子场数量，就需要增加硬件的驱动频率，实际应用时，存在硬件实现难度大，成本高的问题。\n\n发明内容\n\n[0008]本发明的目的在于提供一种显示装置的驱动方法，能够在不增加渠道频率的前提下，减少因数字驱动而导致的画面闪烁，提升显示品质及产品竞争力。\n\n[0009]为实现上述目的，本发明提供一种显示装置的驱动方法，包括如下步骤：\n\n[0010]步骤S1、提供一显示装置，所述显示装置包括阵列排布的多个子像素；\n\n[0011]步骤S2、将一帧画面中各个子像素的数据信号划分为多个具有不同时间权重的子场；\n\n[0012]步骤S3、将所述多个子像素划分为至少两个驱动组，不同驱动组中的子像素对应的子场显示顺序不同；\n\n[0013]步骤S4、按照各个子像素对应的子场显示顺序驱动各个子像素进行画面显示。\n\n[0014]所述步骤S2中将所述多个子像素划分为两组，其中奇数行的子像素为第一组，偶数行的子像素为第二组。\n\n[0015]所述步骤S2中将一帧画面中各个子像素的数据信号划分为4个具有不同时间权重的子场，分别为第一子场、第二子场、第三子场及第四子场，所述第一子场、第二子场、第三子场及第四子场的时间权重依次增加；\n\n[0016]所述步骤S4中，奇数行的子像素按照第一子场、第二子场、第三子场及第四子场的顺序依次显示；\n\n[0017]偶数行的子像素按照第四子场、第二子场、第一子场及第三子场的顺序依次显示。\n\n[0018]所述步骤S1中，对应每一行子像素设有一条扫描线，每一行子像素均电性连接其对应的扫描线。\n\n[0019]所述多个子像素包括第一子像素、第二子像素及第三子像素，所述第一子像素、第二子像素及第三子像素的颜色不同，在同一行子像素中，所述第一子像素、第二子像素及第三子像素依次重复排列，同一列的子像素的颜色相同。\n\n[0020]所述步骤S2中将所述多个子像素划分为四组，其中奇数行奇数列的子像素为第一组，奇数行偶数列的子像素为第二组，偶数行奇数列的子像素为第三组，偶数行偶数列的子像素为第四组。\n\n[0021]所述步骤S2中将一帧画面中各个子像素的数据信号划分为4个具有不同时间权重的子场，分别为第一子场、第二子场、第三子场及第四子场，所述第一子场、第二子场、第三子场及第四子场的时间权重依次增加；\n\n[0022]所述步骤S4中，奇数行奇数列的子像素按照第一子场、第二子场、第三子场及第四子场的顺序依次显示；\n\n[0023]奇数行偶数列的子像素按照第二子场、第一子场、第三子场及第四子场的顺序依次显示；\n\n[0024]偶数行奇数列的子像素按照第四子场、第二子场、第一子场及第三子场的顺序依次显示；\n\n[0025]偶数行偶数列的子像素按照第三子场、第四子场、第一子场及第二子场的顺序依次显示。\n\n[0026]所述步骤S1中，对应每一行子像素设有两条扫描线，在同一行子像素中，奇数列的子像素连接一条扫描线，偶数列的子像素连接另一条扫描线。\n\n[0027]所述多个子像素包括第一子像素、第二子像素、第三子像素及第四子像素，所述第一子像素、第二子像素、第三子像素及第四子像素的颜色不同，其中奇数行奇数列的子像素为第一子像素，奇数行偶数列的子像素为第二子像素，偶数行奇数列的子像素为第三子像素，偶数行偶数列的子像素为第四子像素。\n\n[0028]所述显示装置为OLED显示装置、Mini-LED显示装置或Micro-LED显示装置。\n\n[0029]本发明的有益效果：本发明提供一种显示装置的驱动方法，包括如下步骤：步骤S1、提供一显示装置，所述显示装置包括阵列排布的多个子像素；步骤S2、将一帧画面中各个子像素的数据信号划分为多个具有不同时间权重的子场；步骤S3、将所述多个子像素划分为至少两个驱动组，不同驱动组中的子像素对应的子场显示顺序不同；步骤S4、按照各个子像素对应的子场显示顺序驱动各个子像素进行画面显示，通过设置不同驱动组的子像素的子场显示顺序不同，能够减少因数字驱动而导致的画面闪烁，且无需增加驱动频率。\n\n附图说明\n\n[0030]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0031]附图中，\n\n[0032]图1为现有的像素驱动电路的电路图；\n\n[0033]图2为现有的非等切子场驱动方式的示意图；\n\n[0034]图3为本发明的显示装置的驱动方法第一实施例的步骤S1的示意图；\n\n[0035]图4为本发明的显示装置的驱动方法第一实施例的步骤S4的示意图；\n\n[0036]图5为本发明的显示装置的驱动方法第二实施例的步骤S1的示意图；\n\n[0037]图6为本发明的显示装置的驱动方法第二实施例的步骤S4的示意图；\n\n[0038]图7为本发明的显示装置的驱动方法的流程图。\n\n具体实施方式\n\n[0039]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0040]请参阅图7，本发明提供一种显示装置的驱动方法，包括如下步骤：\n\n[0041]步骤S1、提供一显示装置，所述显示装置包括阵列排布的多个子像素10。\n\n[0042]步骤S2、将一帧画面中各个子像素10的数据信号划分为多个具有不同时间权重的子场；\n\n[0043]步骤S3、将所述多个子像素10划分为至少两个驱动组，不同驱动组中的子像素10对应的子场显示顺序不同；\n\n[0044]步骤S4、按照各个子像素10对应的子场显示顺序驱动各个子像素进行画面显示。\n\n[0045]具体地，结合图3及图4，在本发明的第一实施例中，所述步骤S2中将所述多个子像素10划分为两组，其中奇数行的子像素10为第一组，偶数行的子像素10为第二组。\n\n[0046]进一步地，如图4所述，在本发明的第一实施例中，所述步骤S2中将一帧画面中各个子像素10的数据信号划分为4个具有不同时间权重的子场，分别为第一子场SF1、第二子场SF2、第三子场SF3及第四子场SF4，所述第一子场SF1、第二子场SF2、第三子场SF3及第四子场SF4的时间权重依次增加。\n\n[0047]优选地，所述第一子场SF1、第二子场SF2、第三子场SF3及第四子场SF4的时间权重的比值分别为1：2：4：8，当然这并非对本发明的限制，具体比值可根据实际需要进行选择。\n\n[0048]如图4所示，驱动时，所述步骤S4中，奇数行的子像素10按照第一子场SF1、第二子场SF2、第三子场SF3及第四子场SF4的顺序依次显示；偶数行的子像素10按照第四子场SF4、第二子场SF2、第一子场SF1及第三子场SF3及的顺序依次显示。\n\n[0049]具体地，所述步骤S1中，对应每一行子像素10设有一条扫描线20，每一行子像素10均电性连接其对应的扫描线20。所述多个子像素10包括第一子像素11、第二子像素12及第三子像素13，所述第一子像素11、第二子像素12及第三子像素13的颜色不同，在同一行子像素中，所述第一子像素11、第二子像素12及第三子像素13依次重复排列，同一列的子像素10的颜色相同。\n\n[0050]优选地，所述上第一子像素11、第二子像素12及第三子像素13分别为红色、绿色及蓝色子像素。\n\n[0051]举例来说，在本发明的第一实施例中，在第一帧画面Frame1中，第一行的子像素10按照第一子场SF1、第二子场SF2、第三子场SF3及第四子场SF4的顺序依次显示，第二行的子像素10按照第四子场SF4、第二子场SF2、第一子场SF1及第三子场SF3的顺序依次显示，以第一子像素11发光为例，在P1阶段，第一行第一列的第一子像素11发光；在P2阶段，第二行第一列的第一子像素11发光；在P3阶段，第一行第一列的第一子像素11发光，由于第一行第一列的第一子像素11与第二行第一列的第一子像素11位置靠近，人眼无法识别清楚，故可以认为是同一位置发光，能够有效解决数字驱动的闪烁问题，且不增加更多的子场，仅需要改变子场显示顺序即可实现，不会导致驱动频率增加，产品品质提升的同时无需增加成本。\n\n[0052]具体地，请参阅图5及图6，在本发明的第二实施例中，所述步骤S2中将所述多个子像素10划分为四组，其中奇数行奇数列的子像素10为第一组，奇数行偶数列的子像素10为第二组，偶数行奇数列的子像素10为第三组，偶数行偶数列的子像素10为第四组。\n\n[0053]所述步骤S2中将一帧画面中各个子像素10的数据信号划分为4个具有不同时间权重的子场，分别为第一子场SF1、第二子场SF2、第三子场SF3及第四子场SF4，所述第一子场SF1、第二子场SF2、第三子场SF3及第四子场SF4的时间权重依次增加。\n\n[0054]优选地，所述第一子场SF1、第二子场SF2、第三子场SF3及第四子场SF4的时间权重的比值分别为1：2：4：8，当然这并非对本发明的限制，具体比值可根据实际需要进行选择。\n\n[0055]驱动时，所述步骤S4中，奇数行奇数列的子像素10按照第一子场SF1、第二子场SF2、第三子场SF3及第四子场SF4的顺序依次显示；\n\n[0056]奇数行偶数列的子像素10按照第二子场SF2、第一子场SF1、第三子场SF3及第四子场SF4的顺序依次显示；\n\n[0057]偶数行奇数列的子像素10按照第四子场SF4、第二子场SF2、第一子场SF1及第三子场SF3的顺序依次显示；\n\n[0058]偶数行偶数列的子像素10按照第三子场SF3、第四子场SF4、第一子场SF1及第二子场SF2的顺序依次显示。\n\n[0059]进一步地，如图3所示，所述步骤S1中，对应每一行子像素10设有两条扫描线20，在同一行子像素10中，奇数列10的子像素连接一条扫描线20，偶数列的子像素10连接另一条扫描线20。所述多个子像素包括第一子像素11’、第二子像素12’、第三子像素13’及第四子像素14’，所述第一子像素11’、第二子像素12’、第三子像素13’及第四子像素14’的颜色不同，其中奇数行奇数列的子像素10为第一子像素11’，奇数行偶数列的子像素10为第二子像素12’，偶数行奇数列的子像素10为第三子像素13’，偶数行偶数列的子像素10为第四子像素14’。\n\n[0060]优选地，所述第一子像素11’、第二子像素12’、第三子像素13’及第四子像素14’分别显示红色、绿色、蓝色及白色。\n\n[0061]如图6所示，在P4至P7阶段，奇数行奇数列的子像素10、奇数行偶数列的子像素10、偶数行奇数列的子像素10及偶数行偶数列的子像素10分别发光，四个空间错开且相邻的子像素10在P4至P7阶段分别发光，从而实现，通过空间打散取代现有的灰阶打散，有效解决数字驱动的闪烁问题，且不增加更多的子场，仅需要改变子场显示顺序即可实现，不会导致驱动频率增加，产品品质提升的同时无需增加成本。\n\n[0062]值得一提的是，本发明的显示装置根据需要可以为OLED显示装置、Mini-LED显示装置或Micro-LED显示装置等自发光显示装置。\n\n[0063]进一步地，虽然本发明的第一及第二实施例中仅示意了4个子场的情况，但实际上本发明对于子场的具体数量并无严格限制，其他数量例如6个、或8个子场的驱动方式也适用于本发明，并且对于4个子场的驱动方式，各个子场的显示顺序也可以为上述第一或第二实施例以外的显示顺序，这些均可以根据实际应用时的需求进行优化选择，并不会影响本发明的实现。\n\n[0064]从而，本发明通过空间打散取代现有的灰阶打散，能够实现在不增加驱动频率的情况下，解决数字驱动的闪烁问题，提升产品品质及竞争力。\n\n[0065]综上所述，本发明提供一种显示装置的驱动方法，包括如下步骤：步骤S1、提供一显示装置，所述显示装置包括阵列排布的多个子像素；步骤S2、将一帧画面中各个子像素的数据信号划分为多个具有不同时间权重的子场；步骤S3、将所述多个子像素划分为至少两个驱动组，不同驱动组中的子像素对应的子场显示顺序不同；步骤S4、按照各个子像素对应的子场显示顺序驱动各个子像素进行画面显示，通过设置不同驱动组的子像素的子场显示顺序不同，能够减少因数字驱动而导致的画面闪烁，且无需增加驱动频率。\n\n[0066]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示装置的驱动方法。\n\n背景技术\n\n[0002]随着显示技术的发展，有机发光二极管(Organic Light Emitting Display，OLED)显示装置、迷你发光二极管(Mini Light Emitting Display，Mini-LED)显示装置及微发光二极管(Micro Light Emitting Display，Micro-LED)显示装置等自发光显示装置已经越来越多，被业界公认为是最有发展潜力的显示装置。\n\n[0003]上述自发光显示装置具有呈阵列式排布的多个像素，通过像素驱动电路驱动发光单元发光。常见的像素驱动电路如图1所示，包括一开关薄膜晶体管T10、一驱动薄膜晶体管T20、一存储电容C10、以及一发光单元D，驱动方法有模拟驱动方法及数字驱动方法，采用模拟驱动方法时，由于驱动薄膜晶体管T20长时间工作在饱和区会造成其阈值电压(Vth)发生漂移，导致面板显示画面产生亮度不均匀，影响显示效果，发光单元D根据需要可以为OLED，Mini-LED或Mico-LED\n\n[0004]而在自发光显示装置的数字驱动方法中，驱动薄膜晶体管T20的栅极仅输出两个伽马(Gamma)电压准位，分别为：使得有机发光二级管最亮的最高伽马Gamma准位(GM1)和使得发光单元最暗的最低Gamma准位(GM9)，按照晶体管电流电压I-V方程：\n\n[0005]Ids,sat＝k*(Vgs-Vth)2＝k*(VA-VB-Vth)2\n\n[0006]其中，Ids,sat为晶体管导通电流，k为本征导电因子，Vgs为驱动薄膜晶体管T20的栅源极电压，Vth为驱动薄膜晶体管T20的阈值电压，VA为驱动薄膜晶体管T20的栅极电压，VB为驱动薄膜晶体管T20的源极电压。\n\n[0007]如图2所示，在子场非等切的数字驱动方式中，正常的一个帧被切成多个子场(Subframe，SF)，子场的时间权重按照1：进行驱动，通过控制子场的亮暗产生脉冲宽度调制(Pulse width modulation，PWM)亮度信号，结合人眼对亮度感知的时间上积分原理，可使用数位电压(GM1和GM9)来显示不同灰阶亮度影像，但该方法在显示时容易出现闪烁问题，并在低灰阶时尤为明显，为了解决上述的闪烁问题时，现有技术会使用灰阶打散的方式，将原有的低权重子场拆分几个更小的子场，并插入到其他子场中间，以避免闪烁，但增加子场数量，就需要增加硬件的驱动频率，实际应用时，存在硬件实现难度大，成本高的问题。\n\n发明内容\n\n[0008]本发明的目的在于提供一种显示装置的驱动方法，能够在不增加渠道频率的前提下，减少因数字驱动而导致的画面闪烁，提升显示品质及产品竞争力。\n\n[0009]为实现上述目的，本发明提供一种显示装置的驱动方法，包括如下步骤：\n\n[0010]步骤S1、提供一显示装置，所述显示装置包括阵列排布的多个子像素；\n\n[0011]步骤S2、将一帧画面中各个子像素的数据信号划分为多个具有不同时间权重的子场；\n\n[0012]步骤S3、将所述多个子像素划分为至少两个驱动组，不同驱动组中的子像素对应的子场显示顺序不同；\n\n[0013]步骤S4、按照各个子像素对应的子场显示顺序驱动各个子像素进行画面显示。\n\n[0014]所述步骤S2中将所述多个子像素划分为两组，其中奇数行的子像素为第一组，偶数行的子像素为第二组。\n\n[0015]所述步骤S2中将一帧画面中各个子像素的数据信号划分为4个具有不同时间权重的子场，分别为第一子场、第二子场、第三子场及第四子场，所述第一子场、第二子场、第三子场及第四子场的时间权重依次增加；\n\n[0016]所述步骤S4中，奇数行的子像素按照第一子场、第二子场、第三子场及第四子场的顺序依次显示；\n\n[0017]偶数行的子像素按照第四子场、第二子场、第一子场及第三子场的顺序依次显示。\n\n[0018]所述步骤S1中，对应每一行子像素设有一条扫描线，每一行子像素均电性连接其对应的扫描线。\n\n[0019]所述多个子像素包括第一子像素、第二子像素及第三子像素，所述第一子像素、第二子像素及第三子像素的颜色不同，在同一行子像素中，所述第一子像素、第二子像素及第三子像素依次重复排列，同一列的子像素的颜色相同。\n\n[0020]所述步骤S2中将所述多个子像素划分为四组，其中奇数行奇数列的子像素为第一组，奇数行偶数列的子像素为第二组，偶数行奇数列的子像素为第三组，偶数行偶数列的子像素为第四组。\n\n[0021]所述步骤S2中将一帧画面中各个子像素的数据信号划分为4个具有不同时间权重的子场，分别为第一子场、第二子场、第三子场及第四子场，所述第一子场、第二子场、第三子场及第四子场的时间权重依次增加；\n\n[0022]所述步骤S4中，奇数行奇数列的子像素按照第一子场、第二子场、第三子场及第四子场的顺序依次显示；\n\n[0023]奇数行偶数列的子像素按照第二子场、第一子场、第三子场及第四子场的顺序依次显示；\n\n[0024]偶数行奇数列的子像素按照第四子场、第二子场、第一子场及第三子场的顺序依次显示；\n\n[0025]偶数行偶数列的子像素按照第三子场、第四子场、第一子场及第二子场的顺序依次显示。\n\n[0026]所述步骤S1中，对应每一行子像素设有两条扫描线，在同一行子像素中，奇数列的子像素连接一条扫描线，偶数列的子像素连接另一条扫描线。\n\n[0027]所述多个子像素包括第一子像素、第二子像素、第三子像素及第四子像素，所述第一子像素、第二子像素、第三子像素及第四子像素的颜色不同，其中奇数行奇数列的子像素为第一子像素，奇数行偶数列的子像素为第二子像素，偶数行奇数列的子像素为第三子像素，偶数行偶数列的子像素为第四子像素。\n\n[0028]所述显示装置为OLED显示装置、Mini-LED显示装置或Micro-LED显示装置。\n\n[0029]本发明的有益效果：本发明提供一种显示装置的驱动方法，包括如下步骤：步骤S1、提供一显示装置，所述显示装置包括阵列排布的多个子像素；步骤S2、将一帧画面中各个子像素的数据信号划分为多个具有不同时间权重的子场；步骤S3、将所述多个子像素划分为至少两个驱动组，不同驱动组中的子像素对应的子场显示顺序不同；步骤S4、按照各个子像素对应的子场显示顺序驱动各个子像素进行画面显示，通过设置不同驱动组的子像素的子场显示顺序不同，能够减少因数字驱动而导致的画面闪烁，且无需增加驱动频率。\n\n附图说明\n\n[0030]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0031]附图中，\n\n[0032]图1为现有的像素驱动电路的电路图；\n\n[0033]图2为现有的非等切子场驱动方式的示意图；\n\n[0034]图3为本发明的显示装置的驱动方法第一实施例的步骤S1的示意图；\n\n[0035]图4为本发明的显示装置的驱动方法第一实施例的步骤S4的示意图；\n\n[0036]图5为本发明的显示装置的驱动方法第二实施例的步骤S1的示意图；\n\n[0037]图6为本发明的显示装置的驱动方法第二实施例的步骤S4的示意图；\n\n[0038]图7为本发明的显示装置的驱动方法的流程图。\n\n具体实施方式\n\n[0039]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0040]请参阅图7，本发明提供一种显示装置的驱动方法，包括如下步骤：\n\n[0041]步骤S1、提供一显示装置，所述显示装置包括阵列排布的多个子像素10。\n\n[0042]步骤S2、将一帧画面中各个子像素10的数据信号划分为多个具有不同时间权重的子场；\n\n[0043]步骤S3、将所述多个子像素10划分为至少两个驱动组，不同驱动组中的子像素10对应的子场显示顺序不同；\n\n[0044]步骤S4、按照各个子像素10对应的子场显示顺序驱动各个子像素进行画面显示。\n\n[0045]具体地，结合图3及图4，在本发明的第一实施例中，所述步骤S2中将所述多个子像素10划分为两组，其中奇数行的子像素10为第一组，偶数行的子像素10为第二组。\n\n[0046]进一步地，如图4所述，在本发明的第一实施例中，所述步骤S2中将一帧画面中各个子像素10的数据信号划分为4个具有不同时间权重的子场，分别为第一子场SF1、第二子场SF2、第三子场SF3及第四子场SF4，所述第一子场SF1、第二子场SF2、第三子场SF3及第四子场SF4的时间权重依次增加。\n\n[0047]优选地，所述第一子场SF1、第二子场SF2、第三子场SF3及第四子场SF4的时间权重的比值分别为1：2：4：8，当然这并非对本发明的限制，具体比值可根据实际需要进行选择。\n\n[0048]如图4所示，驱动时，所述步骤S4中，奇数行的子像素10按照第一子场SF1、第二子场SF2、第三子场SF3及第四子场SF4的顺序依次显示；偶数行的子像素10按照第四子场SF4、第二子场SF2、第一子场SF1及第三子场SF3及的顺序依次显示。\n\n[0049]具体地，所述步骤S1中，对应每一行子像素10设有一条扫描线20，每一行子像素10均电性连接其对应的扫描线20。所述多个子像素10包括第一子像素11、第二子像素12及第三子像素13，所述第一子像素11、第二子像素12及第三子像素13的颜色不同，在同一行子像素中，所述第一子像素11、第二子像素12及第三子像素13依次重复排列，同一列的子像素10的颜色相同。\n\n[0050]优选地，所述上第一子像素11、第二子像素12及第三子像素13分别为红色、绿色及蓝色子像素。\n\n[0051]举例来说，在本发明的第一实施例中，在第一帧画面Frame1中，第一行的子像素10按照第一子场SF1、第二子场SF2、第三子场SF3及第四子场SF4的顺序依次显示，第二行的子像素10按照第四子场SF4、第二子场SF2、第一子场SF1及第三子场SF3的顺序依次显示，以第一子像素11发光为例，在P1阶段，第一行第一列的第一子像素11发光；在P2阶段，第二行第一列的第一子像素11发光；在P3阶段，第一行第一列的第一子像素11发光，由于第一行第一列的第一子像素11与第二行第一列的第一子像素11位置靠近，人眼无法识别清楚，故可以认为是同一位置发光，能够有效解决数字驱动的闪烁问题，且不增加更多的子场，仅需要改变子场显示顺序即可实现，不会导致驱动频率增加，产品品质提升的同时无需增加成本。\n\n[0052]具体地，请参阅图5及图6，在本发明的第二实施例中，所述步骤S2中将所述多个子像素10划分为四组，其中奇数行奇数列的子像素10为第一组，奇数行偶数列的子像素10为第二组，偶数行奇数列的子像素10为第三组，偶数行偶数列的子像素10为第四组。\n\n[0053]所述步骤S2中将一帧画面中各个子像素10的数据信号划分为4个具有不同时间权重的子场，分别为第一子场SF1、第二子场SF2、第三子场SF3及第四子场SF4，所述第一子场SF1、第二子场SF2、第三子场SF3及第四子场SF4的时间权重依次增加。\n\n[0054]优选地，所述第一子场SF1、第二子场SF2、第三子场SF3及第四子场SF4的时间权重的比值分别为1：2：4：8，当然这并非对本发明的限制，具体比值可根据实际需要进行选择。\n\n[0055]驱动时，所述步骤S4中，奇数行奇数列的子像素10按照第一子场SF1、第二子场SF2、第三子场SF3及第四子场SF4的顺序依次显示；\n\n[0056]奇数行偶数列的子像素10按照第二子场SF2、第一子场SF1、第三子场SF3及第四子场SF4的顺序依次显示；\n\n[0057]偶数行奇数列的子像素10按照第四子场SF4、第二子场SF2、第一子场SF1及第三子场SF3的顺序依次显示；\n\n[0058]偶数行偶数列的子像素10按照第三子场SF3、第四子场SF4、第一子场SF1及第二子场SF2的顺序依次显示。\n\n[0059]进一步地，如图3所示，所述步骤S1中，对应每一行子像素10设有两条扫描线20，在同一行子像素10中，奇数列10的子像素连接一条扫描线20，偶数列的子像素10连接另一条扫描线20。所述多个子像素包括第一子像素11’、第二子像素12’、第三子像素13’及第四子像素14’，所述第一子像素11’、第二子像素12’、第三子像素13’及第四子像素14’的颜色不同，其中奇数行奇数列的子像素10为第一子像素11’，奇数行偶数列的子像素10为第二子像素12’，偶数行奇数列的子像素10为第三子像素13’，偶数行偶数列的子像素10为第四子像素14’。\n\n[0060]优选地，所述第一子像素11’、第二子像素12’、第三子像素13’及第四子像素14’分别显示红色、绿色、蓝色及白色。\n\n[0061]如图6所示，在P4至P7阶段，奇数行奇数列的子像素10、奇数行偶数列的子像素10、偶数行奇数列的子像素10及偶数行偶数列的子像素10分别发光，四个空间错开且相邻的子像素10在P4至P7阶段分别发光，从而实现，通过空间打散取代现有的灰阶打散，有效解决数字驱动的闪烁问题，且不增加更多的子场，仅需要改变子场显示顺序即可实现，不会导致驱动频率增加，产品品质提升的同时无需增加成本。\n\n[0062]值得一提的是，本发明的显示装置根据需要可以为OLED显示装置、Mini-LED显示装置或Micro-LED显示装置等自发光显示装置。\n\n[0063]进一步地，虽然本发明的第一及第二实施例中仅示意了4个子场的情况，但实际上本发明对于子场的具体数量并无严格限制，其他数量例如6个、或8个子场的驱动方式也适用于本发明，并且对于4个子场的驱动方式，各个子场的显示顺序也可以为上述第一或第二实施例以外的显示顺序，这些均可以根据实际应用时的需求进行优化选择，并不会影响本发明的实现。\n\n[0064]从而，本发明通过空间打散取代现有的灰阶打散，能够实现在不增加驱动频率的情况下，解决数字驱动的闪烁问题，提升产品品质及竞争力。\n\n[0065]综上所述，本发明提供一种显示装置的驱动方法，包括如下步骤：步骤S1、提供一显示装置，所述显示装置包括阵列排布的多个子像素；步骤S2、将一帧画面中各个子像素的数据信号划分为多个具有不同时间权重的子场；步骤S3、将所述多个子像素划分为至少两个驱动组，不同驱动组中的子像素对应的子场显示顺序不同；步骤S4、按照各个子像素对应的子场显示顺序驱动各个子像素进行画面显示，通过设置不同驱动组的子像素的子场显示顺序不同，能够减少因数字驱动而导致的画面闪烁，且无需增加驱动频率。\n\n[0066]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10695, 23749, '技术领域\n\n[0001]本发明涉及显示技术领域，特别是涉及一种柔性微发光二极管显示面板及一种微发光二极管显示装置。\n\n背景技术\n\n[0002]微发光二极管(Micro LED)显示器由于相较OLED显示器具有发光效率高、色域高、亮度高、透明度高、功耗低、可靠性好、寿命长等有优点，有可能成为下一代显示器点。微发光二极管显示器的制作过程中，需要微发光二极管颗粒转移并且接合在TFT基板上，然而微发光二极管颗粒的转移及接合技术受限于设备开发的限制(例如，大量微发光二极管颗粒转移至TFT基板时的对准问题)，目前难以直接进行大尺寸的微发光二极管显示面板的制作。\n\n[0003]因此，利用多个小尺寸的微发光二极管面板拼接来实现大尺寸的微发光二极管显示器的技术似乎是可行的开发方向，但是拼接多个微发光二极管面板之间不具显示功效的狭缝，因此如何达成无缝拼接，则成为实现大尺寸微发光二极管显示装置的关键。\n\n[0004]故，有必要提供一种柔性微发光二极管显示面板及一种微发光二极管显示装置，以解决现有技术所存在的问题。\n\n发明内容\n\n[0005]本发明的目的在于提供一种柔性微发光二极管显示面板及一种微发光二极管显示装置，藉此达成无缝拼接多个微发光二极管面板，进而实现大尺寸微发光二极管显示装置。\n\n[0006]为达成本发明的前述目的，本发明提供一种柔性微发光二极管显示面板，所述柔性微发光二极管显示面板包括：\n\n[0007]一支撑板，具有一上表面、一下表面、至少一侧表面及至少一上圆弧倒角，所述至少一侧表面连接所述上表面及所述下表面，所述至少一上圆弧倒角连接所述上表面与所述侧表面；\n\n[0008]一柔性微发光二极管基板，具有一显示区及至少一边框部，所述显示区设置于所述上表面，并且所述显示区设有多个微发光二极管，所述至少一边框部设置于所述至少一上圆弧倒角及所述侧表面；以及\n\n[0009]一印刷电路板(PCB)，与所述边框部电性连接。\n\n[0010]根据本发明一实施例，所述多个微发光二极管形成多个像素单元，并且相邻的二个像素单元之间具有一像素单元间距，所述支撑板的所述上圆弧倒角的曲率半径小于所述像素单元间距的一半。\n\n[0011]根据本发明一实施例，所述边框部具有至少一切角。\n\n[0012]根据本发明一实施例，所述印刷电路板(PCB)设置于所述支撑板的所述下表面。\n\n[0013]根据本发明一实施例，所述支撑板还包括至少一下圆弧倒角，所述至少一下圆弧倒角连接所述下表面与所述侧表面。\n\n[0014]本发明还提供一种微发光二极管显示装置，所述微发光二极管显示装置包括：\n\n[0015]至少二柔性微发光二极管显示面板，其中每个所述柔性微发光二极管显示面板包括：\n\n[0016]一支撑板，具有一上表面、一下表面、至少一侧表面及至少一上圆弧倒角，所述至少一侧表面连接所述上表面及所述下表面，所述至少一上圆弧倒角连接所述上表面与所述侧表面；\n\n[0017]一柔性微发光二极管基板，具有一显示区及至少一边框部，所述显示区设置于所述上表面，并且所述显示区设有多个微发光二极管，所述至少一边框部设置于所述至少一上圆弧倒角及所述侧表面；以及\n\n[0018]一印刷电路板(PCB)，与所述边框部电性连接。\n\n[0019]根据本发明一实施例，所述多个微发光二极管形成多个像素单元，并且相邻的二个像素单元之间具有一像素单元间距，所述支撑板的所述上圆弧倒角的曲率半径小于所述像素单元间距的一半。\n\n[0020]根据本发明一实施例，所述边框部具有至少一切角。\n\n[0021]根据本发明一实施例，所述印刷电路板(PCB)设置于所述支撑板的所述下表面。\n\n[0022]根据本发明一实施例，所述至少二柔性微发光二极管显示面板之间设有一黑胶。\n\n[0023]本发明的有益效果为：本发明通过支撑板上的圆弧倒角及边框部的切角，搭配柔性微发光二极管基板来缩小不具显示功效的狭缝，藉此达成无缝拼接多个微发光二极管面板，进而实现大尺寸微发光二极管显示装置。\n\n附图说明\n\n[0024]为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下：\n\n[0025]图1是本发明一实施例的一种微发光二极管显示装置的结构侧视示意图。\n\n[0026]图2是本发明一实施例的一种柔性微发光二极管显示面板在展开状态的一上视图。\n\n[0027]图3是图1实施例中上圆弧倒角的侧视图。\n\n[0028]图4是本发明一实施例的一种柔性微发光二极管显示面板在弯折状态的一上视图。\n\n具体实施方式\n\n[0029]以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。再者，本发明所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧面、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。\n\n[0030]请参照图1至图4，图1是本发明一实施例的一种微发光二极管显示装置的结构侧视示意图。图2是本发明一实施例的一种柔性微发光二极管显示面板在展开状态的一上视图。图3是图1实施例中上圆弧倒角的侧视图。图4是本发明一实施例的一种柔性微发光二极管显示面板在弯折状态的一上视图。\n\n[0031]如图1所示，本发明一实施例提供了一种微发光二极管显示装置，所述微发光二极管显示装置包括：一第一柔性微发光二极管显示面板100、一第二柔性微发光二极管显示面板200及一黑胶300。所述微发光二极管显示装置可以是拼接式微发光二极管显示装置。\n\n[0032]所述第一柔性微发光二极管显示面板100包括一支撑板110、一柔性微发光二极管基板120及一印刷电路板(PCB)130。\n\n[0033]所述支撑板110具有一上表面111、一下表面112、一侧表面113及一上圆弧倒角114。所述侧表面113连接所述上表面111及所述下表面112，所述上圆弧倒角114连接所述上表面111与所述侧表面113。此外，所述支撑板110还可以包括一下圆弧倒角115，所述下圆弧倒角115连接所述下表面112与所述侧表面113。\n\n[0034]如图1及图2所示，所述柔性微发光二极管基板120具有一显示区AA及四个边框部121、122、123、124。所述显示区AA设置于所述上表面111，并且所述显示区AA设有多个微发光二极管。所述边框部121设置于所述上圆弧倒角114及所述侧表面113。以图1为例，所述边框部121可以接触所述上圆弧倒角114、所述侧表面113、所述下圆弧倒角115及部分的所述下表面112。藉此，所述边框部121、122、123、124可以弯折并且延伸至所述下表面112。所述边框部122、123、124还可以各自具有切角122a、123a、124a、124b，以避免所述边框部121、122、123、124在弯折时彼此重叠。应当理解的是，所述切角可以依照需求而有多种变化。此外，所述柔性微发光二极管基板120可以是多层的膜层结构，其中可以包括柔性有机膜层。例如使用聚酰亚胺(Polyimide,PI)做为基底来建构所述微发光二极管基板120。\n\n[0035]如图1及图3所示，所述多个微发光二极管形成多个像素单元125，并且相邻的二个像素单元125之间具有一像素单元间距D1，所述上圆弧倒角114的曲率半径R1小于所述像素单元间距D1的一半。应当理解的是，所述下圆弧倒角115的曲率半径也可以小于所述像素单元间距的一半。举例来说，单一个所述像素单元125可以由一红色微发光二极管、一绿色微发光二极管及一蓝色微发光二极管所构成。应当理解的是，所述像素单元125中的所述多个微发光二极管的数量、颜色及排列可以依照设计而变化。\n\n[0036]所述PCB 130与所述边框部121电性连接，例如通过覆晶薄膜(COF)140。即，所述COF 140连接所述PCB 130及所述边框部121。此外，所述边框部122也可与一COF 150连接，其中所述COF 140可以用来传输源漏极的信号，所述COF 150可以用来传输闸极信号。应当理解的是，所述COF 140及所述COF 150的连接关系及作用可以依照需求产生多种变化。此外，所述PCB 130与所述边框部121也可以通过其它可行的技术来实现电性连接。\n\n[0037]所述第二柔性微发光二极管显示面板200包括一支撑板210、一柔性微发光二极管基板220及一PCB 230。\n\n[0038]所述支撑板210具有一上表面211、一下表面212、一侧表面213及一上圆弧倒角214。所述侧表面213连接所述上表面211及所述下表面212，所述上圆弧倒角214连接所述上表面211与所述侧表面213。此外，所述支撑板210还可以包括一下圆弧倒角215，所述下圆弧倒角215连接所述下表面212与所述侧表面213。\n\n[0039]所述柔性微发光二极管基板220具有一显示区AA及多个边框部，例如所述边框部221。所述显示区AA设置于所述上表面211，并且所述显示区AA设有多个微发光二极管。所述边框部223设置于所述上圆弧倒角214及所述侧表面213。以图2为例，所述边框部221可以接触所述上圆弧倒角214、所述侧表面213、所述下圆弧倒角215及部分的所述下表面212。藉此，所述边框部221可以弯折并且延伸至所述下表面212。所述边框部222还可以各自具有切角，以避免所述多个边框部221在弯折时彼此重叠。应当理解的是，所述切角可以依照需求而有多种变化。\n\n[0040]所述多个微发光二极管形成多个像素单元225，并且相邻的二个像素单元225之间具有一像素单元间距，所述上圆弧倒角214的曲率半径小于所述像素单元间距的一半，可参照图3示例。应当理解的是，所述下圆弧倒角215的曲率半径也可以小于所述像素单元间距的一半。举例来说，单一个所述像素单元225可以由一红色微发光二极管、一绿色微发光二极管及一蓝色微发光二极管所构成。应当理解的是，所述像素单元225中的所述多个微发光二极管的数量、颜色及排列可以依照设计而变化。\n\n[0041]所述PCB 230与所述边框部221电性连接，例如通过覆晶薄膜(COF)240。即，所述COF 240连接所述PCB 230及所述边框部221。此外，所述PCB 130与所述边框部121也可以通过其它可行的技术来实现电性连接。\n\n[0042]如图4所示，图4中以所述第一柔性微发光二极管显示面板100为例来说明，在弯折状态下，所述边框部121、122可以弯折至所述支撑板110的所述下表面112，即所述显示区AA的下方。所述PCB 130也设置于所述下表面112。藉此，所述柔性微发光二极管基板120的边框部可以尽可能缩小，同理，所述第二柔性微发光二极管显示面板200的所述柔性微发光二极管基板220的边框部也可以尽可能的缩小。如此一来，就可以达成无缝拼接所述第一柔性微发光二极管显示面板100与所述第二柔性微发光二极管显示面板200。\n\n[0043]此外，如图1所示，所述第一柔性微发光二极管显示面板100与所述第二柔性微发光二极管显示面板200之间设有所述黑胶300。所述黑胶300设置于所述边框部121与所述边框部221之间，用以拼接连接所述第一柔性微发光二极管显示面板100与所述第二柔性微发光二极管显示面板200。\n\n[0044]本发明的有益效果为：本发明通过支撑板上的圆弧倒角及边框部的切角，搭配柔性微发光二极管基板来缩小不具显示功效的狭缝，藉此达成无缝拼接多个微发光二极管面板，进而实现大尺寸微发光二极管显示装置。\n\n[0045]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及显示技术领域，特别是涉及一种柔性微发光二极管显示面板及一种微发光二极管显示装置。\n\n背景技术\n\n[0002]微发光二极管(Micro LED)显示器由于相较OLED显示器具有发光效率高、色域高、亮度高、透明度高、功耗低、可靠性好、寿命长等有优点，有可能成为下一代显示器点。微发光二极管显示器的制作过程中，需要微发光二极管颗粒转移并且接合在TFT基板上，然而微发光二极管颗粒的转移及接合技术受限于设备开发的限制(例如，大量微发光二极管颗粒转移至TFT基板时的对准问题)，目前难以直接进行大尺寸的微发光二极管显示面板的制作。\n\n[0003]因此，利用多个小尺寸的微发光二极管面板拼接来实现大尺寸的微发光二极管显示器的技术似乎是可行的开发方向，但是拼接多个微发光二极管面板之间不具显示功效的狭缝，因此如何达成无缝拼接，则成为实现大尺寸微发光二极管显示装置的关键。\n\n[0004]故，有必要提供一种柔性微发光二极管显示面板及一种微发光二极管显示装置，以解决现有技术所存在的问题。\n\n发明内容\n\n[0005]本发明的目的在于提供一种柔性微发光二极管显示面板及一种微发光二极管显示装置，藉此达成无缝拼接多个微发光二极管面板，进而实现大尺寸微发光二极管显示装置。\n\n[0006]为达成本发明的前述目的，本发明提供一种柔性微发光二极管显示面板，所述柔性微发光二极管显示面板包括：\n\n[0007]一支撑板，具有一上表面、一下表面、至少一侧表面及至少一上圆弧倒角，所述至少一侧表面连接所述上表面及所述下表面，所述至少一上圆弧倒角连接所述上表面与所述侧表面；\n\n[0008]一柔性微发光二极管基板，具有一显示区及至少一边框部，所述显示区设置于所述上表面，并且所述显示区设有多个微发光二极管，所述至少一边框部设置于所述至少一上圆弧倒角及所述侧表面；以及\n\n[0009]一印刷电路板(PCB)，与所述边框部电性连接。\n\n[0010]根据本发明一实施例，所述多个微发光二极管形成多个像素单元，并且相邻的二个像素单元之间具有一像素单元间距，所述支撑板的所述上圆弧倒角的曲率半径小于所述像素单元间距的一半。\n\n[0011]根据本发明一实施例，所述边框部具有至少一切角。\n\n[0012]根据本发明一实施例，所述印刷电路板(PCB)设置于所述支撑板的所述下表面。\n\n[0013]根据本发明一实施例，所述支撑板还包括至少一下圆弧倒角，所述至少一下圆弧倒角连接所述下表面与所述侧表面。\n\n[0014]本发明还提供一种微发光二极管显示装置，所述微发光二极管显示装置包括：\n\n[0015]至少二柔性微发光二极管显示面板，其中每个所述柔性微发光二极管显示面板包括：\n\n[0016]一支撑板，具有一上表面、一下表面、至少一侧表面及至少一上圆弧倒角，所述至少一侧表面连接所述上表面及所述下表面，所述至少一上圆弧倒角连接所述上表面与所述侧表面；\n\n[0017]一柔性微发光二极管基板，具有一显示区及至少一边框部，所述显示区设置于所述上表面，并且所述显示区设有多个微发光二极管，所述至少一边框部设置于所述至少一上圆弧倒角及所述侧表面；以及\n\n[0018]一印刷电路板(PCB)，与所述边框部电性连接。\n\n[0019]根据本发明一实施例，所述多个微发光二极管形成多个像素单元，并且相邻的二个像素单元之间具有一像素单元间距，所述支撑板的所述上圆弧倒角的曲率半径小于所述像素单元间距的一半。\n\n[0020]根据本发明一实施例，所述边框部具有至少一切角。\n\n[0021]根据本发明一实施例，所述印刷电路板(PCB)设置于所述支撑板的所述下表面。\n\n[0022]根据本发明一实施例，所述至少二柔性微发光二极管显示面板之间设有一黑胶。\n\n[0023]本发明的有益效果为：本发明通过支撑板上的圆弧倒角及边框部的切角，搭配柔性微发光二极管基板来缩小不具显示功效的狭缝，藉此达成无缝拼接多个微发光二极管面板，进而实现大尺寸微发光二极管显示装置。\n\n附图说明\n\n[0024]为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下：\n\n[0025]图1是本发明一实施例的一种微发光二极管显示装置的结构侧视示意图。\n\n[0026]图2是本发明一实施例的一种柔性微发光二极管显示面板在展开状态的一上视图。\n\n[0027]图3是图1实施例中上圆弧倒角的侧视图。\n\n[0028]图4是本发明一实施例的一种柔性微发光二极管显示面板在弯折状态的一上视图。\n\n具体实施方式\n\n[0029]以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。再者，本发明所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧面、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。\n\n[0030]请参照图1至图4，图1是本发明一实施例的一种微发光二极管显示装置的结构侧视示意图。图2是本发明一实施例的一种柔性微发光二极管显示面板在展开状态的一上视图。图3是图1实施例中上圆弧倒角的侧视图。图4是本发明一实施例的一种柔性微发光二极管显示面板在弯折状态的一上视图。\n\n[0031]如图1所示，本发明一实施例提供了一种微发光二极管显示装置，所述微发光二极管显示装置包括：一第一柔性微发光二极管显示面板100、一第二柔性微发光二极管显示面板200及一黑胶300。所述微发光二极管显示装置可以是拼接式微发光二极管显示装置。\n\n[0032]所述第一柔性微发光二极管显示面板100包括一支撑板110、一柔性微发光二极管基板120及一印刷电路板(PCB)130。\n\n[0033]所述支撑板110具有一上表面111、一下表面112、一侧表面113及一上圆弧倒角114。所述侧表面113连接所述上表面111及所述下表面112，所述上圆弧倒角114连接所述上表面111与所述侧表面113。此外，所述支撑板110还可以包括一下圆弧倒角115，所述下圆弧倒角115连接所述下表面112与所述侧表面113。\n\n[0034]如图1及图2所示，所述柔性微发光二极管基板120具有一显示区AA及四个边框部121、122、123、124。所述显示区AA设置于所述上表面111，并且所述显示区AA设有多个微发光二极管。所述边框部121设置于所述上圆弧倒角114及所述侧表面113。以图1为例，所述边框部121可以接触所述上圆弧倒角114、所述侧表面113、所述下圆弧倒角115及部分的所述下表面112。藉此，所述边框部121、122、123、124可以弯折并且延伸至所述下表面112。所述边框部122、123、124还可以各自具有切角122a、123a、124a、124b，以避免所述边框部121、122、123、124在弯折时彼此重叠。应当理解的是，所述切角可以依照需求而有多种变化。此外，所述柔性微发光二极管基板120可以是多层的膜层结构，其中可以包括柔性有机膜层。例如使用聚酰亚胺(Polyimide,PI)做为基底来建构所述微发光二极管基板120。\n\n[0035]如图1及图3所示，所述多个微发光二极管形成多个像素单元125，并且相邻的二个像素单元125之间具有一像素单元间距D1，所述上圆弧倒角114的曲率半径R1小于所述像素单元间距D1的一半。应当理解的是，所述下圆弧倒角115的曲率半径也可以小于所述像素单元间距的一半。举例来说，单一个所述像素单元125可以由一红色微发光二极管、一绿色微发光二极管及一蓝色微发光二极管所构成。应当理解的是，所述像素单元125中的所述多个微发光二极管的数量、颜色及排列可以依照设计而变化。\n\n[0036]所述PCB 130与所述边框部121电性连接，例如通过覆晶薄膜(COF)140。即，所述COF 140连接所述PCB 130及所述边框部121。此外，所述边框部122也可与一COF 150连接，其中所述COF 140可以用来传输源漏极的信号，所述COF 150可以用来传输闸极信号。应当理解的是，所述COF 140及所述COF 150的连接关系及作用可以依照需求产生多种变化。此外，所述PCB 130与所述边框部121也可以通过其它可行的技术来实现电性连接。\n\n[0037]所述第二柔性微发光二极管显示面板200包括一支撑板210、一柔性微发光二极管基板220及一PCB 230。\n\n[0038]所述支撑板210具有一上表面211、一下表面212、一侧表面213及一上圆弧倒角214。所述侧表面213连接所述上表面211及所述下表面212，所述上圆弧倒角214连接所述上表面211与所述侧表面213。此外，所述支撑板210还可以包括一下圆弧倒角215，所述下圆弧倒角215连接所述下表面212与所述侧表面213。\n\n[0039]所述柔性微发光二极管基板220具有一显示区AA及多个边框部，例如所述边框部221。所述显示区AA设置于所述上表面211，并且所述显示区AA设有多个微发光二极管。所述边框部223设置于所述上圆弧倒角214及所述侧表面213。以图2为例，所述边框部221可以接触所述上圆弧倒角214、所述侧表面213、所述下圆弧倒角215及部分的所述下表面212。藉此，所述边框部221可以弯折并且延伸至所述下表面212。所述边框部222还可以各自具有切角，以避免所述多个边框部221在弯折时彼此重叠。应当理解的是，所述切角可以依照需求而有多种变化。\n\n[0040]所述多个微发光二极管形成多个像素单元225，并且相邻的二个像素单元225之间具有一像素单元间距，所述上圆弧倒角214的曲率半径小于所述像素单元间距的一半，可参照图3示例。应当理解的是，所述下圆弧倒角215的曲率半径也可以小于所述像素单元间距的一半。举例来说，单一个所述像素单元225可以由一红色微发光二极管、一绿色微发光二极管及一蓝色微发光二极管所构成。应当理解的是，所述像素单元225中的所述多个微发光二极管的数量、颜色及排列可以依照设计而变化。\n\n[0041]所述PCB 230与所述边框部221电性连接，例如通过覆晶薄膜(COF)240。即，所述COF 240连接所述PCB 230及所述边框部221。此外，所述PCB 130与所述边框部121也可以通过其它可行的技术来实现电性连接。\n\n[0042]如图4所示，图4中以所述第一柔性微发光二极管显示面板100为例来说明，在弯折状态下，所述边框部121、122可以弯折至所述支撑板110的所述下表面112，即所述显示区AA的下方。所述PCB 130也设置于所述下表面112。藉此，所述柔性微发光二极管基板120的边框部可以尽可能缩小，同理，所述第二柔性微发光二极管显示面板200的所述柔性微发光二极管基板220的边框部也可以尽可能的缩小。如此一来，就可以达成无缝拼接所述第一柔性微发光二极管显示面板100与所述第二柔性微发光二极管显示面板200。\n\n[0043]此外，如图1所示，所述第一柔性微发光二极管显示面板100与所述第二柔性微发光二极管显示面板200之间设有所述黑胶300。所述黑胶300设置于所述边框部121与所述边框部221之间，用以拼接连接所述第一柔性微发光二极管显示面板100与所述第二柔性微发光二极管显示面板200。\n\n[0044]本发明的有益效果为：本发明通过支撑板上的圆弧倒角及边框部的切角，搭配柔性微发光二极管基板来缩小不具显示功效的狭缝，藉此达成无缝拼接多个微发光二极管面板，进而实现大尺寸微发光二极管显示装置。\n\n[0045]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10696, 23750, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种微型发光二极管转移方法和显示面板。\n\n背景技术\n\n[0002]近年来，随着科学技术的发展，为了满足用户对显示质量的高要求，科技工作者从对普通的发光二极管(Light Emitting Diode，LED)研究逐渐转向对微型发光二极管(Micro LED)的研究。\n\n[0003]微型发光二极管是将普通的发光二极管的尺寸微缩至原来的1％，微型发光二极管的长度在100微米以下。目前，在将微型发光二极管器件转移到阵列基板的过程中，存在微型发光二极管器件倒置和微型发光二极管器件正负电极错位等情况，影响了微型发光二极管器件的转移和组装的效率。\n\n发明内容\n\n[0004]本申请提供的一种微型发光二极管转移方法，以提高微型发光二极管器件的转移和组装的效率。\n\n[0005]本申请提供的一种微型发光二极管转移方法，包括：\n\n[0006]提供一阵列基板，所述阵列基板上具有安装层，所述安装层设置有若干通孔，所述通孔用于暴露所述阵列基板的像素电极；\n\n[0007]微型发光二极管转移到所述安装层上对应的通孔里，每一所述微型发光二极管包括发光部和电极部，所述电极部位于所述发光部的一侧；\n\n[0008]提供一第一载板，将所述阵列基板上异常的微型发光二极管吸附于所述第一载板，所述异常微型发光二极管为电极部朝向所述通孔的开口的微型发光二极管；\n\n[0009]提供一第二载板，所述第二载板表面具有激光形变胶层，将所述第一载板上的所述异常的微型发光二极管粘附于所述第二载板的激光形变胶层；\n\n[0010]采用激光照射所述激光形变胶层，翻转所述异常的微型发光二极管；\n\n[0011]提供一第三载板，将所述第二载板上异常的微型发光二极管转移至所述第三载板；\n\n[0012]将所述第三载板上的异常的微型发光二极管转移至所述安装层的通孔中。\n\n[0013]在本申请所提供的微型发光二极管转移方法中，所述通孔的形状为等腰梯形。\n\n[0014]在本申请所提供的微型发光二极管转移方法中，所述微型发光二极管的形状为等腰梯形，所述微型发光二极管包括相对设置的第一边和第二边，所述第一边位于所述等腰梯形的长边，所述第二边位于所述等腰梯形的短边，所述电极部包括第一电极和第二电极，所述第一电极位于所述第一边，所述第二电极位于所述第二边。\n\n[0015]在本申请所提供的微型发光二极管转移方法中，所述提供一第一载板，将所述异常的微型发光二极管吸附于所述第一载板，所述异常的微型发光二极管为电极部朝向所述通孔的开口的微型发光二极管的步骤，包括，提供一第一载板，所述第一载板涂覆导电层，对所述第一载板施加电压，通过静电力吸附原理将异常的微型发光二极管吸附于第一载板。\n\n[0016]在本申请所提供的微型发光二极管转移方法中，所述提供一第二载板，所述第二载板表面具有激光形变胶层，将所述第一载板上的所述异常的微型发光二极管粘附于所述第二载板的激光形变胶层的步骤，包括，提供一第二载板，在所述第二载板上涂覆激光形变胶层，所述激光形变胶层包括丙烯酸树脂类材料、光敏剂和增粘剂。\n\n[0017]在本申请所提供的微型发光二极管转移方法中，所述采用激光照射设置有所述异常的激光形变胶层，翻转所述异常的微型发光二极管，包括，采用激光照射设置有所述异常的微型发光二极管的激光形变胶层，围绕每一所述异常的微型发光二极管的对称轴逐一翻转所述异常的微型发光二极管。\n\n[0018]在本申请所提供的微型发光二极管转移方法中，所述第三载板的表面具有胶层，在所述将所述异常的微型发光二极管从所述第二载板转移至所述第三载板的步骤后，所述异常的微型发光二极管粘附于所述胶层。\n\n[0019]在本申请所提供的微型发光二极管转移方法中，所述第三载板上有金属层，对所述金属层通电使得所述异常的微型发光二极管从所述第二载板上吸附至所述第三载板。\n\n[0020]本申请提供一种显示面板，所述显示面板包括：\n\n[0021]阵列基板，所述阵列基板上具有安装层，所述安装层设置有若干通孔，所述通孔用于暴露所述阵列基板的像素电极；\n\n[0022]若干微型发光二极管，所述微型发光二极管位于所述安装层的通孔，所述微型发光二极管与所述阵列基板电连接，每一所述微型发光二极管包括：\n\n[0023]发光部，所述发光部朝向所述安装层的通孔的开口部；以及\n\n[0024]电极部，所述电极部位于所述发光部的一侧，所述电极部朝向所述安装层的通孔的底部。\n\n[0025]在本申请所提供的显示面板中，所述通孔的形状与所述微型发光二极管的形状为等腰梯形。\n\n[0026]本申请提供一种微型发光二极管的转移方法和显示面板，在所述微型发光二极管的转移方法中，提供一阵列基板，所述阵列基板上具有安装层，所述安装层设置有若干通孔，所述通孔用于暴露所述阵列基板的像素电极，将微型发光二极管转移到所述安装层对应的通孔里，，所述通孔的形状和所述微型发光二极管的形状为等腰梯形，每一所述微型发光二极管包括发光部和电极部，所述电极部位于所述发光部的一侧，提供一第一载板，将所述阵列基板上异常的微型发光二极管吸附于所述第一载板，所述异常微型发光二极管为电极部朝向所述通孔的开口的微型发光二极管，提供一第二载板，所述第二载板表面具有激光形变胶层，将所述第一载板上的异常的微型发光二极管粘附于所述第二载板的激光形变胶层，采用激光照射设置有所述异常的微型发光二极管的激光形变胶层，逐一翻转所述异常的微型发光二极管，提供一第三载板，将所述第二载板上异常的微型发光二极管转移至所述第三载板，将所述第三载板上异常的微型发光二极管转移至所述安装层的通孔中，在本申请中，所述安装层的通孔的形状和所述微型发光二极管的形状为等腰梯形，所述微型发光二极管可以通过毛刷、震动或流体方式进行组装，从而避免了所述微型发光二极管的正负极错位的情况，在本申请中，采用激光照射设置有所述异常的微型发光二极管的激光形变胶层，逐一翻转所述异常的微型发光二极管，即将倒置的微型发光二极管进行翻转，从而快速的翻转的所述倒置的微型发光二极管，因此，本申请提供的微型发光二极管的转移方法和显示面板提高了微发型光二极管的转移和组装的效率。\n\n附图说明\n\n[0027]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0028]图1是本申请提供的微型发光二极管的转移方法的流程图。\n\n[0029]图2是本申请提供的阵列基板的俯视图。\n\n[0030]图3是本申请提供的阵列基板的剖视图。\n\n[0031]图4是本申请提供的设置有微型发光二极管的阵列基板的剖视图。\n\n[0032]图5是本申请提供的微型发光二极管的剖视图。\n\n[0033]图6是本申请提供的微型发光二极管的俯视图。\n\n[0034]图7是本申请提供的微型发光二极管的仰视图。\n\n[0035]图8是本申请提供的微型发光二极管从阵列基板转移至第一载板的剖视图。\n\n[0036]图9是本申请提供的微型发光二极管从第一载板转移至第二载板的剖视图。\n\n[0037]图10是本申请提供的微型发光二极管从第二载板转移至第三载板的剖视图。\n\n[0038]图11是本申请提供的微型发光二极管从第二载板转移至第三载板的另一种的剖视图。\n\n[0039]图12是本申请提供的微型发光二极管从第三载板转移至阵列基板的剖视图。\n\n[0040]图13是本申请提供的显示面板的剖视图。\n\n具体实施方式\n\n[0041]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0042]请参阅图1，图1为本申请提供的微型发光二极管的转移方法的流程示意图。本申请提供微型发光二极管的转移方法。所述方法包括：\n\n[0043]110、提供一阵列基板10，所述阵列基板10上具有安装层40，所述安装层40设置有若干通孔20，所述通孔20用于暴露所述阵列基板10的像素电极。\n\n[0044]请参阅图2，图2是本申请提供的阵列基板的俯视图。请参阅图3，图3是本申请提供的阵列基板的剖视图。所述阵列基板10应用于液晶显示器。所述安装层40设置于有所述像素电极的阵列基板10的一面。所述安装层40用于设置有若干通孔20，以放置微型发光二极管30，所述通孔20的形状为等腰梯形。\n\n[0045]120、将微型发光二极管30转移到所述安装层对应的通孔20里。每一所述微型发光二极管30包括发光部301和电极部302。所述电极部302位于所述发光部301的一侧。\n\n[0046]请参阅图4，图4是本申请提供的设置有微型发光二极管的阵列基板的剖视图。所述微型发光二极管30是将普通的发光二极管的尺寸微缩至原来的1％，所述微型发光二极管的长度在100微米以下。在所述安装层40的通孔20中组装有所述微型发光二极管30。每一所述微型发光二极管30可通过毛刷、震动或流体等方式，将每一所述微型发光二极管30组装在所述安装层40的通孔20。具体的，可通过转接头将载体基板上的阵列排布的所述微型发光二极管30转移到所述安装层40的通孔20里，直至每一所述安装层40的通孔20组装上所述微型发光二极管30。\n\n[0047]请参阅图5，图5是本申请提供的微型发光二极管的剖视图。请参阅图6，图6是本申请提供的微型发光二极管的俯视图。所述微型发光二极管30的形状与通孔20的形状相同，形状为等腰梯形，以避免所述微型发光二极管30在组装过程中的所述微型发光二极管30的正负电极错位。\n\n[0048]请参阅图7，图7是本申请提供的微型发光二极管的仰视图。所述微型发光二极管30的电极部302包括第一电极3021和第二电极3022。所述第一电极3021与所述第二电极3022分别位于所述微型发光二极管30的两侧。所述微型发光二极管30的第一电极3021为负极，所述微型发光二极管30的第二电极3022为正极，即所述微型发光二极管30的负极3021和所述微型发光二极管30的正极3022分别位于等腰梯形的长边和短边。在一些实施例，所述微型发光二极管30的第一电极3021为正极，所述微型发光二极管30的第二电极3022为负极。\n\n[0049]130、提供一第一载板901，将所述阵列基板10上异常的微型发光二极管31吸附于所述第一载板901，所述异常的微型发光二极管31为电极部302朝向所述通孔的开口的微型发光二极管31。\n\n[0050]请参阅图8，图8是本申请提供的微型发光二极管从阵列基板转移至第一载板的剖视图。所述第一载板901用于承载并转移所述异常的微型发光二极管31。在所述第一载板901涂覆导电层902。利用所述第一载板901的导电层902的导电性，对所述第一载板901的导电层902施加电压，所述第一载板901的导电层902在电场的作用下吸附所述异常的微型发光二极管31的电极部302，使得所述异常的微型发光二极管31从所述阵列基板10吸附至所述第一载板901的导电层902。即将所述倒置的微型发光二极管31转移至所述第一载板901的导电层902。\n\n[0051]因所述异常的微型发光二极管31的电极部302朝向所述安装层40的通孔20的开口部，静电力大，所述异常的微型发光二极管31可从所述阵列基板10吸附至所述第一载板901的导电层902。而所述正常的微型发光二极管32的电极部302朝向所述安装层40的通孔20的底部，静电力小，无法从所述阵列基板10吸附至所述第一载板901的导电层902，可避免将所述正常的微型发光二极管32吸附至所述第一载板901的导电层902。\n\n[0052]140、提供一第二载板101，所述第二载板101表面具有激光形变胶层102，将所述第一载板101上的所述异常的微型发光二极管31粘附于所述第二载板101的激光形变胶层102。\n\n[0053]请参阅图9，图9是本申请提供的微型发光二极管从第一载板转移至第二载板的剖视图。所述第二载板101用于承载并转移所述异常的微型发光二极管31。在第二载板101上涂覆激光形变胶层102。所涂覆的激光形变胶层102的厚度均匀和激光形变胶层102的粘度相同。利用在所述第二载板101的激光形变胶层102的粘附作用，可将所述第一载板901的导电层902上的异常的微型发光二极管31粘附于所述第二载板101的激光形变胶层102。所述第二载板101的激光形变胶层102包括丙烯酸树脂类材料、光敏剂和增粘剂。\n\n[0054]150、采用激光照射所述激光形变胶层901，翻转所述异常的微型发光二极管31。\n\n[0055]利用所述第二载板101上的激光形变胶层102对激光具有感光形变的作用。采用激光从所述第二载板101的底部垂直于所述异常的微型发光二极管31的发光部301照射设置有所述异常的微型发光二极管31的激光形变胶层102，沿每一所述异常的微型发光二极管31的对称轴A-A逐一翻转所述异常的微型发光二极管31，并在每一所述异常的微型发光二极管31翻转的方向上移动相同距离。\n\n[0056]控制每一次激光照射所述微型发光二极管31的能量大小、光斑大小、光斑形状和位置相同，以使得沿所述微型发光二极管31的对称轴A-A进行翻转时，每一所述异常的微型发光二极管31的翻转方向和移动距离相一致。\n\n[0057]所述微型发光二极管31的翻转方向的角度可以为90度、150度或180度等，所述微型发光二极管31的移动距离可以是1厘米、2厘米或3厘米等，可根据具体需求移动至所需距离。此处所述微型发光二极管31的翻转角度为180度，并在翻转角度的方向上移动相同距离。\n\n[0058]160、提供一第三载板111，将所述第二载板101上的异常的微型发光二极管31转移至第三载板111。\n\n[0059]请参阅图10，图10是本申请提供的微型发光二极管从第二载板转移至第三载板的剖视图。所述第三载板111用于承载并转移所述异常的微型发光二极管31。在所述第三载板111表面涂覆胶层112。利用所述第三载板111的胶层112的对物质的粘附性，所述第三载板的胶层112粘附所述异常的微型发光二极管31的电极部302，可将所述第二载板101上所述异常的微型发光二极管31转移至所述第三载板111的胶层112。\n\n[0060]所述第三载板111的胶层112可以为聚二甲基硅氧烷胶层或丙烯酸树脂胶层。\n\n[0061]请参阅图11，图11是本申请提供的微型发光二极管从第二载板转移至第三载板的另一种的剖视图。在其它实施例中，在所述第三载板111上涂覆金属层113。利用所述第三载板111的金属层113的导电性，对所述第三载板的金属层113施加电压，使得所述第二载板101所述异常的微型发光二极管31吸附至所述第三载板的金属层113。\n\n[0062]其中，所述第三载板111上涂覆的金属层113可以是Cu、Al、Ag、Au、Cr或Mo等。\n\n[0063]170、将所述第三载板111上的所述异常的微型发光二极管31转移至所述阵列基板10的通孔20中。\n\n[0064]请参阅图12，图12是本申请提供的微型发光二极管从第三载板转移至阵列基板的剖视图。请参阅图13，图13是本申请提供的显示面板的剖视图。将所述第三载板的胶层112的异常的微型发光二极管31转移至所述安装层40的通孔20中。\n\n[0065]本申请还提供一种显示面板，请参阅图13，图13为本申请所提供的显示面板的剖视图。\n\n[0066]所述显示面板包括阵列基板10、通孔20、安装层40、微型发光二极管32、微型发光二极管32的电极部302和微型发光二极管32的发光部301。\n\n[0067]请参阅图2和图3，图2为本申请提供的阵列基板的俯视图，图3为本申请提供的阵列基板的剖视图。所述阵列基板10上具有安装层40，所述安装层40设置有若干通孔20，所述通孔20用于暴露所述阵列基板10的像素电极，所述通孔20位于所述阵列基板10上的安装层40，所述通孔20的形状为等腰梯形。所述微型发光二极管32位于所述阵列基板10的通孔20。请参阅图6，图6是本申请提供的微型发光二极管的俯视图。所述微型发光二极管32的形状为等腰梯形。请参阅图5，图5是本申请提供的微型发光二极管的仰视图。所述微型发光二极管32包括发光部301和电极部302。所述微型发光二极管32的发光部301朝向所述通孔20的开口部。所述微型发光二极管32的电极部302位于所述发光部301的一侧。所述微型发光二极管32的电极部302朝向所述通孔20的底部。\n\n[0068]所述微型发光二极管32的电极部302包括第一电极3021和第二电极3022。所述微型发光二极管32具有第一边和第二边。所述第一电极3021位于所述微型发光二极管32的第一边。所述第二电极3022位于所述微型发光二极管32的第二边。所述微型发光二极管32的第一边和第二边相对设置。所述微型发光二极管32的形状为等腰梯形。所述微型发光二极管32的第一边位于等腰梯形的长边。所述微型发光二极管32的第二边位于等腰梯形的短边。所述第一电极3021为负极，所述第二电极3022为正极。\n\n[0069]在另一种显示面板中，所述微型发光二极管32的第一电极3021为正极，所述微型发光二极管32的第二电极3022为正极。\n\n[0070]本申请提供一种微型发光二极管的转移方法和显示面板，在所述微型发光二极管的转移方法中，提供一阵列基板，所述阵列基板上具有安装层，所述安装层设置有若干通孔，所述通孔用于暴露所述阵列基板的像素电极，将微型发光二极管转移到所述安装层对应的通孔里，，所述通孔的形状和所述微型发光二极管的形状为等腰梯形，每一所述微型发光二极管包括发光部和电极部，所述电极部位于所述发光部的一侧，提供一第一载板，将所述阵列基板上异常的微型发光二极管吸附于所述第一载板，所述异常微型发光二极管为电极部朝向所述通孔的开口的微型发光二极管，提供一第二载板，所述第二载板表面具有激光形变胶层，将所述第一载板上的异常的微型发光二极管粘附于所述第二载板的激光形变胶层，采用激光照射设置有所述异常的微型发光二极管的激光形变胶层，逐一翻转所述异常的微型发光二极管，提供一第三载板，将所述第二载板上异常的微型发光二极管转移至所述第三载板，将所述第三载板上异常的微型发光二极管转移至所述安装层的通孔中，在本申请中，所述安装层的通孔的形状和所述微型发光二极管的形状为等腰梯形，所述微型发光二极管可以通过毛刷、震动或流体方式进行组装，从而避免了所述微型发光二极管的正负极错位的情况，在本申请中，采用激光照射设置有所述异常的微型发光二极管的激光形变胶层，逐一翻转所述异常的微型发光二极管，即将倒置的微型发光二极管进行翻转，从而快速的翻转的所述倒置的微型发光二极管，因此，本申请提供的微型发光二极管的转移方法和显示面板提高了微发型光二极管的转移和组装的效率。\n\n[0071]以上对本申请实施方式提供了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施方式的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种微型发光二极管转移方法和显示面板。\n\n背景技术\n\n[0002]近年来，随着科学技术的发展，为了满足用户对显示质量的高要求，科技工作者从对普通的发光二极管(Light Emitting Diode，LED)研究逐渐转向对微型发光二极管(Micro LED)的研究。\n\n[0003]微型发光二极管是将普通的发光二极管的尺寸微缩至原来的1％，微型发光二极管的长度在100微米以下。目前，在将微型发光二极管器件转移到阵列基板的过程中，存在微型发光二极管器件倒置和微型发光二极管器件正负电极错位等情况，影响了微型发光二极管器件的转移和组装的效率。\n\n发明内容\n\n[0004]本申请提供的一种微型发光二极管转移方法，以提高微型发光二极管器件的转移和组装的效率。\n\n[0005]本申请提供的一种微型发光二极管转移方法，包括：\n\n[0006]提供一阵列基板，所述阵列基板上具有安装层，所述安装层设置有若干通孔，所述通孔用于暴露所述阵列基板的像素电极；\n\n[0007]微型发光二极管转移到所述安装层上对应的通孔里，每一所述微型发光二极管包括发光部和电极部，所述电极部位于所述发光部的一侧；\n\n[0008]提供一第一载板，将所述阵列基板上异常的微型发光二极管吸附于所述第一载板，所述异常微型发光二极管为电极部朝向所述通孔的开口的微型发光二极管；\n\n[0009]提供一第二载板，所述第二载板表面具有激光形变胶层，将所述第一载板上的所述异常的微型发光二极管粘附于所述第二载板的激光形变胶层；\n\n[0010]采用激光照射所述激光形变胶层，翻转所述异常的微型发光二极管；\n\n[0011]提供一第三载板，将所述第二载板上异常的微型发光二极管转移至所述第三载板；\n\n[0012]将所述第三载板上的异常的微型发光二极管转移至所述安装层的通孔中。\n\n[0013]在本申请所提供的微型发光二极管转移方法中，所述通孔的形状为等腰梯形。\n\n[0014]在本申请所提供的微型发光二极管转移方法中，所述微型发光二极管的形状为等腰梯形，所述微型发光二极管包括相对设置的第一边和第二边，所述第一边位于所述等腰梯形的长边，所述第二边位于所述等腰梯形的短边，所述电极部包括第一电极和第二电极，所述第一电极位于所述第一边，所述第二电极位于所述第二边。\n\n[0015]在本申请所提供的微型发光二极管转移方法中，所述提供一第一载板，将所述异常的微型发光二极管吸附于所述第一载板，所述异常的微型发光二极管为电极部朝向所述通孔的开口的微型发光二极管的步骤，包括，提供一第一载板，所述第一载板涂覆导电层，对所述第一载板施加电压，通过静电力吸附原理将异常的微型发光二极管吸附于第一载板。\n\n[0016]在本申请所提供的微型发光二极管转移方法中，所述提供一第二载板，所述第二载板表面具有激光形变胶层，将所述第一载板上的所述异常的微型发光二极管粘附于所述第二载板的激光形变胶层的步骤，包括，提供一第二载板，在所述第二载板上涂覆激光形变胶层，所述激光形变胶层包括丙烯酸树脂类材料、光敏剂和增粘剂。\n\n[0017]在本申请所提供的微型发光二极管转移方法中，所述采用激光照射设置有所述异常的激光形变胶层，翻转所述异常的微型发光二极管，包括，采用激光照射设置有所述异常的微型发光二极管的激光形变胶层，围绕每一所述异常的微型发光二极管的对称轴逐一翻转所述异常的微型发光二极管。\n\n[0018]在本申请所提供的微型发光二极管转移方法中，所述第三载板的表面具有胶层，在所述将所述异常的微型发光二极管从所述第二载板转移至所述第三载板的步骤后，所述异常的微型发光二极管粘附于所述胶层。\n\n[0019]在本申请所提供的微型发光二极管转移方法中，所述第三载板上有金属层，对所述金属层通电使得所述异常的微型发光二极管从所述第二载板上吸附至所述第三载板。\n\n[0020]本申请提供一种显示面板，所述显示面板包括：\n\n[0021]阵列基板，所述阵列基板上具有安装层，所述安装层设置有若干通孔，所述通孔用于暴露所述阵列基板的像素电极；\n\n[0022]若干微型发光二极管，所述微型发光二极管位于所述安装层的通孔，所述微型发光二极管与所述阵列基板电连接，每一所述微型发光二极管包括：\n\n[0023]发光部，所述发光部朝向所述安装层的通孔的开口部；以及\n\n[0024]电极部，所述电极部位于所述发光部的一侧，所述电极部朝向所述安装层的通孔的底部。\n\n[0025]在本申请所提供的显示面板中，所述通孔的形状与所述微型发光二极管的形状为等腰梯形。\n\n[0026]本申请提供一种微型发光二极管的转移方法和显示面板，在所述微型发光二极管的转移方法中，提供一阵列基板，所述阵列基板上具有安装层，所述安装层设置有若干通孔，所述通孔用于暴露所述阵列基板的像素电极，将微型发光二极管转移到所述安装层对应的通孔里，，所述通孔的形状和所述微型发光二极管的形状为等腰梯形，每一所述微型发光二极管包括发光部和电极部，所述电极部位于所述发光部的一侧，提供一第一载板，将所述阵列基板上异常的微型发光二极管吸附于所述第一载板，所述异常微型发光二极管为电极部朝向所述通孔的开口的微型发光二极管，提供一第二载板，所述第二载板表面具有激光形变胶层，将所述第一载板上的异常的微型发光二极管粘附于所述第二载板的激光形变胶层，采用激光照射设置有所述异常的微型发光二极管的激光形变胶层，逐一翻转所述异常的微型发光二极管，提供一第三载板，将所述第二载板上异常的微型发光二极管转移至所述第三载板，将所述第三载板上异常的微型发光二极管转移至所述安装层的通孔中，在本申请中，所述安装层的通孔的形状和所述微型发光二极管的形状为等腰梯形，所述微型发光二极管可以通过毛刷、震动或流体方式进行组装，从而避免了所述微型发光二极管的正负极错位的情况，在本申请中，采用激光照射设置有所述异常的微型发光二极管的激光形变胶层，逐一翻转所述异常的微型发光二极管，即将倒置的微型发光二极管进行翻转，从而快速的翻转的所述倒置的微型发光二极管，因此，本申请提供的微型发光二极管的转移方法和显示面板提高了微发型光二极管的转移和组装的效率。\n\n附图说明\n\n[0027]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0028]图1是本申请提供的微型发光二极管的转移方法的流程图。\n\n[0029]图2是本申请提供的阵列基板的俯视图。\n\n[0030]图3是本申请提供的阵列基板的剖视图。\n\n[0031]图4是本申请提供的设置有微型发光二极管的阵列基板的剖视图。\n\n[0032]图5是本申请提供的微型发光二极管的剖视图。\n\n[0033]图6是本申请提供的微型发光二极管的俯视图。\n\n[0034]图7是本申请提供的微型发光二极管的仰视图。\n\n[0035]图8是本申请提供的微型发光二极管从阵列基板转移至第一载板的剖视图。\n\n[0036]图9是本申请提供的微型发光二极管从第一载板转移至第二载板的剖视图。\n\n[0037]图10是本申请提供的微型发光二极管从第二载板转移至第三载板的剖视图。\n\n[0038]图11是本申请提供的微型发光二极管从第二载板转移至第三载板的另一种的剖视图。\n\n[0039]图12是本申请提供的微型发光二极管从第三载板转移至阵列基板的剖视图。\n\n[0040]图13是本申请提供的显示面板的剖视图。\n\n具体实施方式\n\n[0041]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0042]请参阅图1，图1为本申请提供的微型发光二极管的转移方法的流程示意图。本申请提供微型发光二极管的转移方法。所述方法包括：\n\n[0043]110、提供一阵列基板10，所述阵列基板10上具有安装层40，所述安装层40设置有若干通孔20，所述通孔20用于暴露所述阵列基板10的像素电极。\n\n[0044]请参阅图2，图2是本申请提供的阵列基板的俯视图。请参阅图3，图3是本申请提供的阵列基板的剖视图。所述阵列基板10应用于液晶显示器。所述安装层40设置于有所述像素电极的阵列基板10的一面。所述安装层40用于设置有若干通孔20，以放置微型发光二极管30，所述通孔20的形状为等腰梯形。\n\n[0045]120、将微型发光二极管30转移到所述安装层对应的通孔20里。每一所述微型发光二极管30包括发光部301和电极部302。所述电极部302位于所述发光部301的一侧。\n\n[0046]请参阅图4，图4是本申请提供的设置有微型发光二极管的阵列基板的剖视图。所述微型发光二极管30是将普通的发光二极管的尺寸微缩至原来的1％，所述微型发光二极管的长度在100微米以下。在所述安装层40的通孔20中组装有所述微型发光二极管30。每一所述微型发光二极管30可通过毛刷、震动或流体等方式，将每一所述微型发光二极管30组装在所述安装层40的通孔20。具体的，可通过转接头将载体基板上的阵列排布的所述微型发光二极管30转移到所述安装层40的通孔20里，直至每一所述安装层40的通孔20组装上所述微型发光二极管30。\n\n[0047]请参阅图5，图5是本申请提供的微型发光二极管的剖视图。请参阅图6，图6是本申请提供的微型发光二极管的俯视图。所述微型发光二极管30的形状与通孔20的形状相同，形状为等腰梯形，以避免所述微型发光二极管30在组装过程中的所述微型发光二极管30的正负电极错位。\n\n[0048]请参阅图7，图7是本申请提供的微型发光二极管的仰视图。所述微型发光二极管30的电极部302包括第一电极3021和第二电极3022。所述第一电极3021与所述第二电极3022分别位于所述微型发光二极管30的两侧。所述微型发光二极管30的第一电极3021为负极，所述微型发光二极管30的第二电极3022为正极，即所述微型发光二极管30的负极3021和所述微型发光二极管30的正极3022分别位于等腰梯形的长边和短边。在一些实施例，所述微型发光二极管30的第一电极3021为正极，所述微型发光二极管30的第二电极3022为负极。\n\n[0049]130、提供一第一载板901，将所述阵列基板10上异常的微型发光二极管31吸附于所述第一载板901，所述异常的微型发光二极管31为电极部302朝向所述通孔的开口的微型发光二极管31。\n\n[0050]请参阅图8，图8是本申请提供的微型发光二极管从阵列基板转移至第一载板的剖视图。所述第一载板901用于承载并转移所述异常的微型发光二极管31。在所述第一载板901涂覆导电层902。利用所述第一载板901的导电层902的导电性，对所述第一载板901的导电层902施加电压，所述第一载板901的导电层902在电场的作用下吸附所述异常的微型发光二极管31的电极部302，使得所述异常的微型发光二极管31从所述阵列基板10吸附至所述第一载板901的导电层902。即将所述倒置的微型发光二极管31转移至所述第一载板901的导电层902。\n\n[0051]因所述异常的微型发光二极管31的电极部302朝向所述安装层40的通孔20的开口部，静电力大，所述异常的微型发光二极管31可从所述阵列基板10吸附至所述第一载板901的导电层902。而所述正常的微型发光二极管32的电极部302朝向所述安装层40的通孔20的底部，静电力小，无法从所述阵列基板10吸附至所述第一载板901的导电层902，可避免将所述正常的微型发光二极管32吸附至所述第一载板901的导电层902。\n\n[0052]140、提供一第二载板101，所述第二载板101表面具有激光形变胶层102，将所述第一载板101上的所述异常的微型发光二极管31粘附于所述第二载板101的激光形变胶层102。\n\n[0053]请参阅图9，图9是本申请提供的微型发光二极管从第一载板转移至第二载板的剖视图。所述第二载板101用于承载并转移所述异常的微型发光二极管31。在第二载板101上涂覆激光形变胶层102。所涂覆的激光形变胶层102的厚度均匀和激光形变胶层102的粘度相同。利用在所述第二载板101的激光形变胶层102的粘附作用，可将所述第一载板901的导电层902上的异常的微型发光二极管31粘附于所述第二载板101的激光形变胶层102。所述第二载板101的激光形变胶层102包括丙烯酸树脂类材料、光敏剂和增粘剂。\n\n[0054]150、采用激光照射所述激光形变胶层901，翻转所述异常的微型发光二极管31。\n\n[0055]利用所述第二载板101上的激光形变胶层102对激光具有感光形变的作用。采用激光从所述第二载板101的底部垂直于所述异常的微型发光二极管31的发光部301照射设置有所述异常的微型发光二极管31的激光形变胶层102，沿每一所述异常的微型发光二极管31的对称轴A-A逐一翻转所述异常的微型发光二极管31，并在每一所述异常的微型发光二极管31翻转的方向上移动相同距离。\n\n[0056]控制每一次激光照射所述微型发光二极管31的能量大小、光斑大小、光斑形状和位置相同，以使得沿所述微型发光二极管31的对称轴A-A进行翻转时，每一所述异常的微型发光二极管31的翻转方向和移动距离相一致。\n\n[0057]所述微型发光二极管31的翻转方向的角度可以为90度、150度或180度等，所述微型发光二极管31的移动距离可以是1厘米、2厘米或3厘米等，可根据具体需求移动至所需距离。此处所述微型发光二极管31的翻转角度为180度，并在翻转角度的方向上移动相同距离。\n\n[0058]160、提供一第三载板111，将所述第二载板101上的异常的微型发光二极管31转移至第三载板111。\n\n[0059]请参阅图10，图10是本申请提供的微型发光二极管从第二载板转移至第三载板的剖视图。所述第三载板111用于承载并转移所述异常的微型发光二极管31。在所述第三载板111表面涂覆胶层112。利用所述第三载板111的胶层112的对物质的粘附性，所述第三载板的胶层112粘附所述异常的微型发光二极管31的电极部302，可将所述第二载板101上所述异常的微型发光二极管31转移至所述第三载板111的胶层112。\n\n[0060]所述第三载板111的胶层112可以为聚二甲基硅氧烷胶层或丙烯酸树脂胶层。\n\n[0061]请参阅图11，图11是本申请提供的微型发光二极管从第二载板转移至第三载板的另一种的剖视图。在其它实施例中，在所述第三载板111上涂覆金属层113。利用所述第三载板111的金属层113的导电性，对所述第三载板的金属层113施加电压，使得所述第二载板101所述异常的微型发光二极管31吸附至所述第三载板的金属层113。\n\n[0062]其中，所述第三载板111上涂覆的金属层113可以是Cu、Al、Ag、Au、Cr或Mo等。\n\n[0063]170、将所述第三载板111上的所述异常的微型发光二极管31转移至所述阵列基板10的通孔20中。\n\n[0064]请参阅图12，图12是本申请提供的微型发光二极管从第三载板转移至阵列基板的剖视图。请参阅图13，图13是本申请提供的显示面板的剖视图。将所述第三载板的胶层112的异常的微型发光二极管31转移至所述安装层40的通孔20中。\n\n[0065]本申请还提供一种显示面板，请参阅图13，图13为本申请所提供的显示面板的剖视图。\n\n[0066]所述显示面板包括阵列基板10、通孔20、安装层40、微型发光二极管32、微型发光二极管32的电极部302和微型发光二极管32的发光部301。\n\n[0067]请参阅图2和图3，图2为本申请提供的阵列基板的俯视图，图3为本申请提供的阵列基板的剖视图。所述阵列基板10上具有安装层40，所述安装层40设置有若干通孔20，所述通孔20用于暴露所述阵列基板10的像素电极，所述通孔20位于所述阵列基板10上的安装层40，所述通孔20的形状为等腰梯形。所述微型发光二极管32位于所述阵列基板10的通孔20。请参阅图6，图6是本申请提供的微型发光二极管的俯视图。所述微型发光二极管32的形状为等腰梯形。请参阅图5，图5是本申请提供的微型发光二极管的仰视图。所述微型发光二极管32包括发光部301和电极部302。所述微型发光二极管32的发光部301朝向所述通孔20的开口部。所述微型发光二极管32的电极部302位于所述发光部301的一侧。所述微型发光二极管32的电极部302朝向所述通孔20的底部。\n\n[0068]所述微型发光二极管32的电极部302包括第一电极3021和第二电极3022。所述微型发光二极管32具有第一边和第二边。所述第一电极3021位于所述微型发光二极管32的第一边。所述第二电极3022位于所述微型发光二极管32的第二边。所述微型发光二极管32的第一边和第二边相对设置。所述微型发光二极管32的形状为等腰梯形。所述微型发光二极管32的第一边位于等腰梯形的长边。所述微型发光二极管32的第二边位于等腰梯形的短边。所述第一电极3021为负极，所述第二电极3022为正极。\n\n[0069]在另一种显示面板中，所述微型发光二极管32的第一电极3021为正极，所述微型发光二极管32的第二电极3022为正极。\n\n[0070]本申请提供一种微型发光二极管的转移方法和显示面板，在所述微型发光二极管的转移方法中，提供一阵列基板，所述阵列基板上具有安装层，所述安装层设置有若干通孔，所述通孔用于暴露所述阵列基板的像素电极，将微型发光二极管转移到所述安装层对应的通孔里，，所述通孔的形状和所述微型发光二极管的形状为等腰梯形，每一所述微型发光二极管包括发光部和电极部，所述电极部位于所述发光部的一侧，提供一第一载板，将所述阵列基板上异常的微型发光二极管吸附于所述第一载板，所述异常微型发光二极管为电极部朝向所述通孔的开口的微型发光二极管，提供一第二载板，所述第二载板表面具有激光形变胶层，将所述第一载板上的异常的微型发光二极管粘附于所述第二载板的激光形变胶层，采用激光照射设置有所述异常的微型发光二极管的激光形变胶层，逐一翻转所述异常的微型发光二极管，提供一第三载板，将所述第二载板上异常的微型发光二极管转移至所述第三载板，将所述第三载板上异常的微型发光二极管转移至所述安装层的通孔中，在本申请中，所述安装层的通孔的形状和所述微型发光二极管的形状为等腰梯形，所述微型发光二极管可以通过毛刷、震动或流体方式进行组装，从而避免了所述微型发光二极管的正负极错位的情况，在本申请中，采用激光照射设置有所述异常的微型发光二极管的激光形变胶层，逐一翻转所述异常的微型发光二极管，即将倒置的微型发光二极管进行翻转，从而快速的翻转的所述倒置的微型发光二极管，因此，本申请提供的微型发光二极管的转移方法和显示面板提高了微发型光二极管的转移和组装的效率。\n\n[0071]以上对本申请实施方式提供了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施方式的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10697, 23751, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种液晶显示屏。\n\n背景技术\n\n[0002]液晶显示屏大部分为背光型液晶显示屏，其是由液晶显示面板及背光单元(BLU)所组成。一般的液晶显示面板主要包含彩色滤光片(CF)基板、薄膜晶体管(TFT)阵列基板及偏光板等结构。\n\n[0003]当前的液晶显示屏产品中，以LED灯条作为背光源的背光单元的驱动方式主要有两种：\n\n[0004]第一种方式，在LED灯条(Light-bar)上做出电源走线，电源走线通过零插入力(ZIF)端子(pin)或者焊线方式连接到主PCBA/FPCA线路上，通过液晶模组的主线路电源控制对LED灯条的输出电流；该方式多用于手机、平板、笔记本电脑类产品；\n\n[0005]第二种方式，将LED灯条的电源走线通过端子连接至整机的主板电源的ZIF端子上，通过主电源板分别给主板&LED灯条提供电源；该方式多用于显示屏(Monitor)、TV类产品。\n\n[0006]采用微型LED(Mini-LED)灯条的背光源因为其高动态范围(HDR)控制效果较好，动态画面对比度高，已逐步取代传统的面发光背光源。虽然用微型LED区域调光(LocalDiming)分区发光方式取代传统背光源的整面发光方式可有效提高动态对比度，提升画质，但是衍生的问题则是随着背光分区的增加，微型LED灯条所连接的焊盘(Pad)的数量也越来越多。\n\n[0007]采用微型LED灯条作为背光源时，对于第一种背光单元的驱动方式(对应手机、平板、笔记本电脑类产品)而言，微型LED灯条的焊盘(Pad)区会占用越来越大的绑定(Bonding)空间；这对于FPC/PCB排版(Layout)面积的压缩，减少整机屏幕空间占用十分的不利。\n\n[0008]采用微型LED灯条作为背光源时，对于第二种背光单元的驱动方式(对应显示屏、TV类产品)而言，微型LED灯条的端子(Pin)区会使用较多端子数的连接器(Connector)，造成端子占用空间较大，电源PCB板排版(Layout)布线成本增加。\n\n[0009]参见图1，其为现有一种微型LED背光单元的布局示意图，该微型LED背光单元包括支架(frame)10，支架10包括底面及环绕该底面向上高出该底面的侧壁，支架10的底面上设有微型LED灯条(图未示)，支架10的一侧设有延伸超过该侧的支架柔性电路板11，微型LED灯条一般可以由在有效显示区(AA)12范围内呈矩阵排列的微型LED组成，支架柔性电路板11延伸超过该侧的部分设有灯条焊盘13，灯条焊盘13可以通过支架柔性电路板11的内部走线对应连接至微型LED灯条的分区走线。\n\n[0010]参见图2，其为现有一种液晶显示屏的装配示意图。该液晶显示屏主要包括液晶显示面板和与其对应装配到一起的微型LED背光单元。微型LED背光单元的结构可参照图1，主要包括支架10，支架10的一侧设有延伸超过该侧的支架柔性电路板11，支架柔性电路板11延伸超过该侧的部分设有灯条焊盘13，支架10的底面上设有微型LED灯条14，灯条焊盘13可以通过支架柔性电路板11的内部走线对应连接至微型LED灯条14的分区走线，微型LED灯条14上面设有扩散板(Diffuser)及棱镜(Prism)组件15。液晶显示面板主要包括彩色滤光片基板20、薄膜晶体管阵列基板21、上偏光板22及下偏光板23，彩色滤光片基板20及薄膜晶体管阵列基板21上下相对设置以组成液晶盒，上偏光板22设于彩色滤光片基板20上方，下偏光板23设于薄膜晶体管阵列基板21下方，薄膜晶体管阵列基板21的一侧边缘超出彩色滤光片基板20的对应边缘并且该侧边缘上设有液晶盒焊盘24，液晶盒焊盘24用于电性连接液晶盒外部的主柔性电路板25以及液晶盒内的走线，现有技术中一般通过将支架柔性电路板11的灯条焊盘13焊接至主柔性电路板25，以实现微型LED灯条14与外部的驱动电源的电性连接。\n\n[0011]为满足当前区域调光方式的设计需求，微型LED灯条14的背光分区不断增加，相应导致灯条焊盘13所占绑定区域的面积不断扩大，进而会带来排版区走线面积增加、电路板走线层数增多和/或连接器成本提高等负作用。\n\n发明内容\n\n[0012]因此，本发明的目的在于提供一种液晶显示屏，压缩微型LED背光单元与液晶显示面板的连通所需的空间。\n\n[0013]为实现上述目的，本发明提供了一种液晶显示屏一种液晶显示屏，包括液晶显示面板和与其对应装配到一起的微型LED背光单元；该微型LED背光单元包括支架，该支架的底面上设有微型LED灯条，该支架的侧壁上方设有灯条焊盘，所述灯条焊盘分别对应连接至微型LED灯条的分区走线；该液晶显示面板的液晶盒内设有用于电性连接液晶盒内走线的液晶盒焊盘，所述液晶盒焊盘设有与其相连的对应的金属端子，所述金属端子从液晶盒的一侧边缘延伸至液晶盒下表面，所述金属端子与对应的灯条焊盘的位置匹配；当所述液晶显示面板和微型LED背光单元装配到一起时，所述金属端子与对应的灯条焊盘电性连通。\n\n[0014]其中，所述微型LED灯条上面还设有扩散板及棱镜组件。\n\n[0015]其中，还包括设于所述金属端子与对应的灯条焊盘之间的异向导电胶，所述金属端子与对应的灯条焊盘通过异向导电胶绑定实现电性连通。\n\n[0016]其中，所述液晶盒上还设有用于控制输入到微型LED背光单元的各个分区的电流的芯片或覆晶薄膜。\n\n[0017]其中，所述液晶盒连接至外部的柔性电路板以控制输入到微型LED背光单元的各个分区的电流。\n\n[0018]其中，所述液晶盒在金属端子一侧的边缘经受过导角抛光处理。\n\n[0019]其中，所述液晶显示面板包括彩色滤光片基板、薄膜晶体管阵列基板、上偏光板及下偏光板，所述彩色滤光片基板及薄膜晶体管阵列基板上下相对设置以组成液晶盒，所述上偏光板设于彩色滤光片基板上方，所述下偏光板设于薄膜晶体管阵列基板下方。\n\n[0020]其中，所述薄膜晶体管阵列基板的一侧边缘超出彩色滤光片基板的对应边缘并且该侧边缘上设有液晶盒焊盘，所述金属端子在薄膜晶体管阵列基板的该侧边缘从薄膜晶体管阵列基板的上表面延伸至下表面。\n\n[0021]综上，本发明的液晶显示屏极大的压缩了微型LED背光单元与液晶显示面板的连通所需的空间，在极窄小范围内实现通过液晶显示面板的线路来驱动微型LED背光单元。\n\n附图说明\n\n[0022]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。\n\n[0023]附图中，\n\n[0024]图1为现有一种微型LED背光单元的布局示意图；\n\n[0025]图2为现有一种液晶显示屏的装配示意图；\n\n[0026]图3为本发明液晶显示屏一较佳实施例的装配示意图；\n\n[0027]图4为该较佳实施例的微型LED背光单元的布局示意图；\n\n[0028]图5为本发明液晶显示屏又一较佳实施例的装配示意图；\n\n[0029]图6为本发明液晶显示屏再一较佳实施例的液晶显示面板示意图。\n\n具体实施方式\n\n[0030]参见图3及图4，图3为本发明液晶显示屏一较佳实施例的装配示意图，图4为该较佳实施例的微型LED背光单元的布局示意图。本发明的液晶显示屏主要包括液晶显示面板和与其对应装配到一起的微型LED背光单元，微型LED背光单元与液晶显示面板的结构可参照现有技术，本发明附图及说明书仅对其主要结构进行说明，本发明重点在于提出一种新的设计，用于极大压缩微型LED背光单元与液晶显示面板的电性连通所需的空间。\n\n[0031]微型LED背光单元主要包括支架30，支架30包括底面及环绕该底面向上高出该底面的侧壁，支架30的底面上设有微型LED灯条34，微型LED灯条34可以由在有效显示区32范围内呈矩阵排列的微型LED组成，支架30的侧壁上方设有灯条焊盘33，灯条焊盘33通过预设的走线分别对应连接至微型LED灯条34的分区走线；微型LED灯条34上面还设有扩散板及棱镜组件35。\n\n[0032]液晶显示面板主要包括彩色滤光片基板20、薄膜晶体管阵列基板21、上偏光板22及下偏光板23，其他结构如密封胶(seal)等在此不再赘述。彩色滤光片基板20及薄膜晶体管阵列基板21上下相对设置以组成液晶盒，上偏光板22设于彩色滤光片基板20上方，下偏光板23设于薄膜晶体管阵列基板21下方，液晶盒内设有液晶盒焊盘24，具体来说，在此较佳实施例中薄膜晶体管阵列基板21的一侧边缘超出彩色滤光片基板20的对应边缘并且该侧边缘上设有液晶盒焊盘24，液晶盒焊盘24用于电性连接液晶盒内的走线，液晶盒焊盘24设有与其相连的对应的金属端子26，所述金属端子26从液晶盒的该侧边缘延伸至液晶盒下表面，具体来说，在此较佳实施例中，金属端子26在薄膜晶体管阵列基板21的该侧边缘从薄膜晶体管阵列基板21的上表面延伸至下表面。\n\n[0033]液晶盒的金属端子26与微型LED背光单元的对应的灯条焊盘33的位置匹配，当该较佳实施例的液晶显示面板和微型LED背光单元装配到一起时，金属端子26与对应的灯条焊盘33电性连通。\n\n[0034]参见图5，其为本发明液晶显示屏又一较佳实施例的装配示意图。微型LED背光单元主要包括支架50，支架50的底面上设有微型LED灯条54，支架50的侧壁上方设有灯条焊盘53，灯条焊盘53通过预设的走线分别对应连接至微型LED灯条54的分区走线；微型LED灯条54上面还设有扩散板及棱镜组件55。液晶显示面板主要包括彩色滤光片基板40、薄膜晶体管阵列基板41、上偏光板42及下偏光板43。彩色滤光片基板40及薄膜晶体管阵列基板41上下相对设置以组成液晶盒，上偏光板42设于彩色滤光片基板40上方，下偏光板43设于薄膜晶体管阵列基板41下方，液晶盒内设有液晶盒焊盘44，液晶盒焊盘44设有与其相连的对应的金属端子46，所述金属端子46从液晶盒的该侧边缘延伸至液晶盒下表面。\n\n[0035]液晶盒边缘可以进行导角抛光，保证薄膜晶体管阵列基板41上的液晶盒焊盘44外漏在侧面，并且液晶盒焊盘44所在侧的基板边缘无锋利的棱角。\n\n[0036]金属端子46可通过如下方式形成：在液晶盒的液晶盒焊盘44的区域及薄膜晶体管阵列基板41背面局部通过磁控溅射/蒸镀的方式形成一层金属导电层与液晶盒边缘的液晶盒焊盘44连通；该金属导电层通过激光(Laser)切割方式形成各金属端子46的线路，保证各端子之间不发生短路；最终金属端子46将用于控制微型LED背光单元的灯条焊盘53。\n\n[0037]液晶盒的金属端子46与微型LED背光单元的对应的灯条焊盘53的位置匹配，当该较佳实施例的液晶显示面板和微型LED背光单元装配到一起时，金属端子46与对应的灯条焊盘53通过异向导电胶(ACF)56绑定实现电性连通。\n\n[0038]参见图6，其为本发明液晶显示屏再一较佳实施例的液晶显示面板示意图。该较佳实施例中液晶显示面板主要包括彩色滤光片基板60、薄膜晶体管阵列基板61、上偏光板62及下偏光板63。液晶盒内设有液晶盒焊盘64，液晶盒焊盘64设有与其相连的对应的金属端子66，所述金属端子66从液晶盒的该侧边缘延伸至液晶盒下表面。液晶盒上还设有芯片(IC)或覆晶薄膜(COF)67，可以利用液晶盒的芯片或覆晶薄膜67控制输入到微型LED背光单元的各个分区的电流，也可以连接柔性电路板来代替芯片或覆晶薄膜67的功能。\n\n[0039]综上，本发明的液晶显示屏针对微型LED背光单元分区控制的电路特性，提出了微型LED背光单元与液晶盒进行绑定的设计方案取代现有的灯条与驱动电源焊接的设计，在极窄小范围内实现通过液晶显示面板的线路来驱动微型LED背光单元，可以实现区域调光的同时不增加绑定区的布线，甚至可以进一步压缩液晶模组实现轻薄化设计，最终实现整机上产品结构轻薄化、成本降低。\n\n[0040]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种液晶显示屏。\n\n背景技术\n\n[0002]液晶显示屏大部分为背光型液晶显示屏，其是由液晶显示面板及背光单元(BLU)所组成。一般的液晶显示面板主要包含彩色滤光片(CF)基板、薄膜晶体管(TFT)阵列基板及偏光板等结构。\n\n[0003]当前的液晶显示屏产品中，以LED灯条作为背光源的背光单元的驱动方式主要有两种：\n\n[0004]第一种方式，在LED灯条(Light-bar)上做出电源走线，电源走线通过零插入力(ZIF)端子(pin)或者焊线方式连接到主PCBA/FPCA线路上，通过液晶模组的主线路电源控制对LED灯条的输出电流；该方式多用于手机、平板、笔记本电脑类产品；\n\n[0005]第二种方式，将LED灯条的电源走线通过端子连接至整机的主板电源的ZIF端子上，通过主电源板分别给主板&LED灯条提供电源；该方式多用于显示屏(Monitor)、TV类产品。\n\n[0006]采用微型LED(Mini-LED)灯条的背光源因为其高动态范围(HDR)控制效果较好，动态画面对比度高，已逐步取代传统的面发光背光源。虽然用微型LED区域调光(LocalDiming)分区发光方式取代传统背光源的整面发光方式可有效提高动态对比度，提升画质，但是衍生的问题则是随着背光分区的增加，微型LED灯条所连接的焊盘(Pad)的数量也越来越多。\n\n[0007]采用微型LED灯条作为背光源时，对于第一种背光单元的驱动方式(对应手机、平板、笔记本电脑类产品)而言，微型LED灯条的焊盘(Pad)区会占用越来越大的绑定(Bonding)空间；这对于FPC/PCB排版(Layout)面积的压缩，减少整机屏幕空间占用十分的不利。\n\n[0008]采用微型LED灯条作为背光源时，对于第二种背光单元的驱动方式(对应显示屏、TV类产品)而言，微型LED灯条的端子(Pin)区会使用较多端子数的连接器(Connector)，造成端子占用空间较大，电源PCB板排版(Layout)布线成本增加。\n\n[0009]参见图1，其为现有一种微型LED背光单元的布局示意图，该微型LED背光单元包括支架(frame)10，支架10包括底面及环绕该底面向上高出该底面的侧壁，支架10的底面上设有微型LED灯条(图未示)，支架10的一侧设有延伸超过该侧的支架柔性电路板11，微型LED灯条一般可以由在有效显示区(AA)12范围内呈矩阵排列的微型LED组成，支架柔性电路板11延伸超过该侧的部分设有灯条焊盘13，灯条焊盘13可以通过支架柔性电路板11的内部走线对应连接至微型LED灯条的分区走线。\n\n[0010]参见图2，其为现有一种液晶显示屏的装配示意图。该液晶显示屏主要包括液晶显示面板和与其对应装配到一起的微型LED背光单元。微型LED背光单元的结构可参照图1，主要包括支架10，支架10的一侧设有延伸超过该侧的支架柔性电路板11，支架柔性电路板11延伸超过该侧的部分设有灯条焊盘13，支架10的底面上设有微型LED灯条14，灯条焊盘13可以通过支架柔性电路板11的内部走线对应连接至微型LED灯条14的分区走线，微型LED灯条14上面设有扩散板(Diffuser)及棱镜(Prism)组件15。液晶显示面板主要包括彩色滤光片基板20、薄膜晶体管阵列基板21、上偏光板22及下偏光板23，彩色滤光片基板20及薄膜晶体管阵列基板21上下相对设置以组成液晶盒，上偏光板22设于彩色滤光片基板20上方，下偏光板23设于薄膜晶体管阵列基板21下方，薄膜晶体管阵列基板21的一侧边缘超出彩色滤光片基板20的对应边缘并且该侧边缘上设有液晶盒焊盘24，液晶盒焊盘24用于电性连接液晶盒外部的主柔性电路板25以及液晶盒内的走线，现有技术中一般通过将支架柔性电路板11的灯条焊盘13焊接至主柔性电路板25，以实现微型LED灯条14与外部的驱动电源的电性连接。\n\n[0011]为满足当前区域调光方式的设计需求，微型LED灯条14的背光分区不断增加，相应导致灯条焊盘13所占绑定区域的面积不断扩大，进而会带来排版区走线面积增加、电路板走线层数增多和/或连接器成本提高等负作用。\n\n发明内容\n\n[0012]因此，本发明的目的在于提供一种液晶显示屏，压缩微型LED背光单元与液晶显示面板的连通所需的空间。\n\n[0013]为实现上述目的，本发明提供了一种液晶显示屏一种液晶显示屏，包括液晶显示面板和与其对应装配到一起的微型LED背光单元；该微型LED背光单元包括支架，该支架的底面上设有微型LED灯条，该支架的侧壁上方设有灯条焊盘，所述灯条焊盘分别对应连接至微型LED灯条的分区走线；该液晶显示面板的液晶盒内设有用于电性连接液晶盒内走线的液晶盒焊盘，所述液晶盒焊盘设有与其相连的对应的金属端子，所述金属端子从液晶盒的一侧边缘延伸至液晶盒下表面，所述金属端子与对应的灯条焊盘的位置匹配；当所述液晶显示面板和微型LED背光单元装配到一起时，所述金属端子与对应的灯条焊盘电性连通。\n\n[0014]其中，所述微型LED灯条上面还设有扩散板及棱镜组件。\n\n[0015]其中，还包括设于所述金属端子与对应的灯条焊盘之间的异向导电胶，所述金属端子与对应的灯条焊盘通过异向导电胶绑定实现电性连通。\n\n[0016]其中，所述液晶盒上还设有用于控制输入到微型LED背光单元的各个分区的电流的芯片或覆晶薄膜。\n\n[0017]其中，所述液晶盒连接至外部的柔性电路板以控制输入到微型LED背光单元的各个分区的电流。\n\n[0018]其中，所述液晶盒在金属端子一侧的边缘经受过导角抛光处理。\n\n[0019]其中，所述液晶显示面板包括彩色滤光片基板、薄膜晶体管阵列基板、上偏光板及下偏光板，所述彩色滤光片基板及薄膜晶体管阵列基板上下相对设置以组成液晶盒，所述上偏光板设于彩色滤光片基板上方，所述下偏光板设于薄膜晶体管阵列基板下方。\n\n[0020]其中，所述薄膜晶体管阵列基板的一侧边缘超出彩色滤光片基板的对应边缘并且该侧边缘上设有液晶盒焊盘，所述金属端子在薄膜晶体管阵列基板的该侧边缘从薄膜晶体管阵列基板的上表面延伸至下表面。\n\n[0021]综上，本发明的液晶显示屏极大的压缩了微型LED背光单元与液晶显示面板的连通所需的空间，在极窄小范围内实现通过液晶显示面板的线路来驱动微型LED背光单元。\n\n附图说明\n\n[0022]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。\n\n[0023]附图中，\n\n[0024]图1为现有一种微型LED背光单元的布局示意图；\n\n[0025]图2为现有一种液晶显示屏的装配示意图；\n\n[0026]图3为本发明液晶显示屏一较佳实施例的装配示意图；\n\n[0027]图4为该较佳实施例的微型LED背光单元的布局示意图；\n\n[0028]图5为本发明液晶显示屏又一较佳实施例的装配示意图；\n\n[0029]图6为本发明液晶显示屏再一较佳实施例的液晶显示面板示意图。\n\n具体实施方式\n\n[0030]参见图3及图4，图3为本发明液晶显示屏一较佳实施例的装配示意图，图4为该较佳实施例的微型LED背光单元的布局示意图。本发明的液晶显示屏主要包括液晶显示面板和与其对应装配到一起的微型LED背光单元，微型LED背光单元与液晶显示面板的结构可参照现有技术，本发明附图及说明书仅对其主要结构进行说明，本发明重点在于提出一种新的设计，用于极大压缩微型LED背光单元与液晶显示面板的电性连通所需的空间。\n\n[0031]微型LED背光单元主要包括支架30，支架30包括底面及环绕该底面向上高出该底面的侧壁，支架30的底面上设有微型LED灯条34，微型LED灯条34可以由在有效显示区32范围内呈矩阵排列的微型LED组成，支架30的侧壁上方设有灯条焊盘33，灯条焊盘33通过预设的走线分别对应连接至微型LED灯条34的分区走线；微型LED灯条34上面还设有扩散板及棱镜组件35。\n\n[0032]液晶显示面板主要包括彩色滤光片基板20、薄膜晶体管阵列基板21、上偏光板22及下偏光板23，其他结构如密封胶(seal)等在此不再赘述。彩色滤光片基板20及薄膜晶体管阵列基板21上下相对设置以组成液晶盒，上偏光板22设于彩色滤光片基板20上方，下偏光板23设于薄膜晶体管阵列基板21下方，液晶盒内设有液晶盒焊盘24，具体来说，在此较佳实施例中薄膜晶体管阵列基板21的一侧边缘超出彩色滤光片基板20的对应边缘并且该侧边缘上设有液晶盒焊盘24，液晶盒焊盘24用于电性连接液晶盒内的走线，液晶盒焊盘24设有与其相连的对应的金属端子26，所述金属端子26从液晶盒的该侧边缘延伸至液晶盒下表面，具体来说，在此较佳实施例中，金属端子26在薄膜晶体管阵列基板21的该侧边缘从薄膜晶体管阵列基板21的上表面延伸至下表面。\n\n[0033]液晶盒的金属端子26与微型LED背光单元的对应的灯条焊盘33的位置匹配，当该较佳实施例的液晶显示面板和微型LED背光单元装配到一起时，金属端子26与对应的灯条焊盘33电性连通。\n\n[0034]参见图5，其为本发明液晶显示屏又一较佳实施例的装配示意图。微型LED背光单元主要包括支架50，支架50的底面上设有微型LED灯条54，支架50的侧壁上方设有灯条焊盘53，灯条焊盘53通过预设的走线分别对应连接至微型LED灯条54的分区走线；微型LED灯条54上面还设有扩散板及棱镜组件55。液晶显示面板主要包括彩色滤光片基板40、薄膜晶体管阵列基板41、上偏光板42及下偏光板43。彩色滤光片基板40及薄膜晶体管阵列基板41上下相对设置以组成液晶盒，上偏光板42设于彩色滤光片基板40上方，下偏光板43设于薄膜晶体管阵列基板41下方，液晶盒内设有液晶盒焊盘44，液晶盒焊盘44设有与其相连的对应的金属端子46，所述金属端子46从液晶盒的该侧边缘延伸至液晶盒下表面。\n\n[0035]液晶盒边缘可以进行导角抛光，保证薄膜晶体管阵列基板41上的液晶盒焊盘44外漏在侧面，并且液晶盒焊盘44所在侧的基板边缘无锋利的棱角。\n\n[0036]金属端子46可通过如下方式形成：在液晶盒的液晶盒焊盘44的区域及薄膜晶体管阵列基板41背面局部通过磁控溅射/蒸镀的方式形成一层金属导电层与液晶盒边缘的液晶盒焊盘44连通；该金属导电层通过激光(Laser)切割方式形成各金属端子46的线路，保证各端子之间不发生短路；最终金属端子46将用于控制微型LED背光单元的灯条焊盘53。\n\n[0037]液晶盒的金属端子46与微型LED背光单元的对应的灯条焊盘53的位置匹配，当该较佳实施例的液晶显示面板和微型LED背光单元装配到一起时，金属端子46与对应的灯条焊盘53通过异向导电胶(ACF)56绑定实现电性连通。\n\n[0038]参见图6，其为本发明液晶显示屏再一较佳实施例的液晶显示面板示意图。该较佳实施例中液晶显示面板主要包括彩色滤光片基板60、薄膜晶体管阵列基板61、上偏光板62及下偏光板63。液晶盒内设有液晶盒焊盘64，液晶盒焊盘64设有与其相连的对应的金属端子66，所述金属端子66从液晶盒的该侧边缘延伸至液晶盒下表面。液晶盒上还设有芯片(IC)或覆晶薄膜(COF)67，可以利用液晶盒的芯片或覆晶薄膜67控制输入到微型LED背光单元的各个分区的电流，也可以连接柔性电路板来代替芯片或覆晶薄膜67的功能。\n\n[0039]综上，本发明的液晶显示屏针对微型LED背光单元分区控制的电路特性，提出了微型LED背光单元与液晶盒进行绑定的设计方案取代现有的灯条与驱动电源焊接的设计，在极窄小范围内实现通过液晶显示面板的线路来驱动微型LED背光单元，可以实现区域调光的同时不增加绑定区的布线，甚至可以进一步压缩液晶模组实现轻薄化设计，最终实现整机上产品结构轻薄化、成本降低。\n\n[0040]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10698, 23752, '技术领域\n\n[0001]本发明涉及显示领域，尤其是涉及一种显示装置。\n\n背景技术\n\n[0002]在中小尺寸显示领域，全面屏技术成为当前的重点研发方向，也即如何通过相关技术的开发实现人机交互界面的屏占比最大化。第一代全面屏技术主要集中于屏幕尺寸比例由16:9变化为18：9甚至更大；第二代全面屏就则是进一步地压缩屏幕上下左右的边界，甚至采用柔性折叠技术最大化可视面积。而近期全面屏的另一个研究方向则是如何将显示终端的指纹识别、摄像头、面部识别、距离传感等传感器进一步地融合进显示屏的显示区，使得显示屏从单纯的显示界面逐渐过渡到全面的感知、交互界面。\n\n[0003]目前主流的显示技术包括液晶显示器(LCD)和有机发光二极管(OLED)，其中LCD为被动发光技术，通过整面背光结构照射液晶盒实现光纤的亮暗控制，而OLED技术则是采用逐颗的OLED像素主动发光，因为相较而言具有高对比、轻薄、可弯曲、可折叠等优势。另一方面，基于OLED无法背光的特性，可以很好的与现行的光学指纹识别模组兼容，因而光学指纹识别成为目前OLED的“独有优势”，同时业界也在开发基于OLED的屏下摄像头方案，从而可以进一步在显示模式和摄像模式间切换并且无需现行LCD挖孔方案所造成的挖孔区无法显示等优势。\n\n[0004]MicroLED相较于OLED技术具有相似的主动发光特性，同时由于无机LED本身的稳定性与高效率等特点，在技术上较OLED具有寿命长、亮度高、chip尺寸小、响应时间长等优势，目前已经成为显示业界的重点开发方向之一。但是相较于传统面板技术通过刻蚀等“减法制造”方式，microLED主要依赖于加法制造方式，在技术成熟度上较低，特别是面临巨量显示画素转移时具有先天的制程良率与成本挑战，因而在短期内仍然难以成为真正成熟的显示技术。\n\n[0005]因此，有必要提出一种新的显示装置，解决了现有技术中摄像区与显示区的割裂造成视觉不完美的问题，实现真正的全面屏技术。\n\n发明内容\n\n[0006]本发明目的在于，提供一种显示装置，通过在透明显示区制作小面积MicroLED发光单元，因而在MicroLED发光单元打开时所述透明显示区可以实现正常显示，同时在任意时刻可以透过所述透明显示区采集图像进入屏下传感器，同时所述透明显示区与主显示区无缝衔接，因而在视觉上没有任何显示中断及不连续边界，可以实现完全的全面屏设计。\n\n[0007]本发明提供一种显示装置，包括背光模块；下偏光片，设于所述背光模块上，所述下偏光片设有一第二通孔；液晶显示面板，设于所述下偏光片远离所述背光模块的一侧，包括主显示区以及透明显示区，所述主显示区包围所述透明显示区；上偏光片，设于所述液晶显示面板远离所述下偏光片的一侧，所述上偏光片设有一第一通孔，所述第一通孔与所述第二通孔对应所述透明显示区；其中，所述第一通孔中设有若干MicroLED发光单元。\n\n[0008]进一步地，所述透明显示区设有一透明基板，所述透明基板设于所述液晶显示面板远离所述背光模块的一侧；所述MicroLED发光单元设于所述透明基板上。\n\n[0009]进一步地，所述MicroLED发光单元包括红色发光单元、绿色发光单元和蓝色发光单元；\n\n[0010]进一步地，所述MicroLED发光单元的面积小于所述液晶显示面板子像素的面积。\n\n[0011]进一步地，所述MicroLED发光单元长度为1～500um，所述液晶显示面板子像素为10～1000um；所述透明显示区的透光率为50％～100％。\n\n[0012]进一步地，所述红色发光单元包括蓝色发光单元以及涂覆所述蓝色发光单元上的转化膜，通过所述蓝色发光单元激发所述转化膜实现所述红色发光单元的发光；所述绿色发光单元包括蓝色发光单元以及涂覆所述蓝色发光单元上的转化膜，通过所述蓝色发光单元激发所述转化膜实现所述蓝色发光单元的发光；所述转化膜为量子点膜或荧光粉。\n\n[0013]进一步地，所述上偏光片为金属线栅偏光片；所述金属线栅偏光片包括：透光基板；介质层，设于所述透光基板上；若干条金属线栅，设于所述介质层远离所述透光基板的一侧；所述金属线栅的周期为20～500nm，占空比为0.1～0.9，高度为10～500nm。\n\n[0014]进一步地，所述金属线栅为Al、Ag或Au具有较大折射率的材料；所述介质层材料包括SiO2、SiO、MgO、Si3N4、TiO2、Ta2O5。\n\n[0015]进一步地，所述上偏光片为涂布取向型偏光片，包括偏光子与取向性配体。\n\n[0016]进一步地，所述背光模块为侧入式背光模块；所述背光模块包括：导光板，具有一通孔，所述通孔对应所述透明显示区；背光源，设于所述导光板的侧边；其中，所述通孔中设有一传感器模块；所述传感器模块包括且不限于指纹识别传感器、摄像传感器、结构光传感器、飞行时间传感器、距离传感器或光线传感器。\n\n[0017]本发明的有益效果是：本发明提供一种显示装置，通过在液晶显示面板下传感器模块的位置处实现透明显示，形成一透明显示区。在透明显示区制作小面积MicroLED发光单元，从而实现透明显示区的显示功能。所述MicroLED显示采用RGB三色显示，且各个MicroLED发光单元的大小小于子像素大小，在子像素内部无MicroLED发光单元区域光线可以正常通过，因而在MicroLED发光单元打开时该区域可以实现正常显示。同时所述透明显示区与主显示区无缝衔接，因而在视觉上没有任何显示中断及不连续边界(如notch、Hole等)，可以实现完全的全面屏设计。\n\n附图说明\n\n[0018]下面结合附图和实施例对本发明作进一步的描述。\n\n[0019]图1为本发明显示装置的结构示意图；\n\n[0020]图2为本发明显示装置的MicroLED发光单元的平面图；\n\n[0021]图3为本发明显示装置的偏光片的平面图；\n\n[0022]图4为本发明显示装置的金属线栅偏光片的结构示意图\n\n[0023]图5为本发明显示装置的摄像圆孔屏的结构示意图；\n\n[0024]图6为本发明显示装置的水滴屏的结构示意图；\n\n[0025]图7为本发明显示装置的凹槽屏的结构示意图；\n\n[0026]图8为本发明显示装置的指纹识别圆孔屏的结构示意图；\n\n[0027]图9为本发明显示装置的方形屏的结构示意图；\n\n[0028]显示装置10；\n\n[0029]液晶显示面板100；背光模块200；传感器模块204；。\n\n[0030]第一基板101；液晶层102；第二基板103；\n\n[0031]下偏光片11；上偏光片12；第一通孔111；\n\n[0032]第二通孔121；透明基板21；MicroLED发光单元22；\n\n[0033]红色发光单元221；绿色发光单元222；蓝色发光单元223；\n\n[0034]主显示区110；透明显示区120；导光板201；\n\n[0035]背光源202；通孔203；封装层13；\n\n[0036]子像素130；透光基板124；介质层122；\n\n[0037]金属线栅123。\n\n具体实施方式\n\n[0038]以下是各实施例的说明是参考附加的图式，用以例示本发明可以用实施的特定实施例。本发明所提到的方向用语，例如上、下、前、后、左、右、内、外、侧等，仅是参考附图式的方向。本发明提到的元件名称，例如第一、第二等，仅是区分不同的元部件，可以更好的表达。在图中，结构相似的单元以相同标号表示。\n\n[0039]本文将参照附图来详细描述本发明的实施例。本发明可以表现为许多不同形式，本发明不应仅被解释为本文阐述的具体实施例。本发明提供这些实施例是为了解释本发明的实际应用，从而使本领域其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改方案。\n\n[0040]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。\n\n[0041]如图1所示，本发明提供一种显示装置10，包括背光模块200、下偏光片11、液晶显示面板100以及上偏光片12。\n\n[0042]所述背光模块200为侧入式背光模块或直下式背光模块，本发明采用侧入式背光模块。\n\n[0043]所述背光模块200包括导光板201和背光源202。\n\n[0044]所述导光板201，具有一通孔203；所述背光源202设于所述导光板201的侧边；所述通孔203中设有一传感器模块204。\n\n[0045]所述传感器模块204包括且不限于指纹识别传感器、摄像传感器、结构光传感器、飞行时间传感器、距离传感器或光线传感器。\n\n[0046]所述下偏光片11设于所述背光模块200上；所述液晶显示面板100设于所述下偏光片11远离所述背光模块200的一侧。\n\n[0047]所述液晶显示面板100包括主显示区110以及透明显示区120，所述主显示区110包围所述透明显示区120。所述透明显示区120并没有像素电路，因此可以实现透明特性。所述导光板201的通孔203对应所述透明显示区120。\n\n[0048]所述液晶显示面板100包括：第一基板101、液晶层102以及第二基板103。所述第一基板101为TFT阵列基板，所述第二基板103为彩膜基板。\n\n[0049]所述液晶层102设于所述第一基板101远离所述背光模块200的一侧；所述第二基板103设于所述液晶层102远离所述第一基板101的一侧。\n\n[0050]所述上偏光片12设于所述液晶显示面板100远离所述下偏光片11的一侧；所述上偏光片12设有一第一通孔111，所述下偏光片11设有一第二通孔121；所述第一通孔111与所述第二通孔121对应所述透明显示区120。\n\n[0051]所述透明显示区120设有一透明基板21，所述透明基板21设于所述液晶显示面板100远离所述背光模块200的一侧；所述透明基板21为高透过率材料，例如Glass、ColorlessPI、PMMA等。\n\n[0052]所述透明基板21上设有若干MicroLED发光单元22。所述透明显示区120的MicroLED显示采用on-cell结构，通过在所述彩膜基板(即所述第二基板103)侧设置所述透明基板21，并在所述透明基板21上布置驱动走线以及TFT开关，用以驱动所述MicroLED发光单元22进行发光显示，并且可以实现所述透明显示区120的触控功能。\n\n[0053]如图2所示，所述MicroLED发光单元22包括红色发光单元221、绿色发光单元222以及蓝色发光单元223；所述MicroLED发光单元22的面积小于所述液晶显示面板100子像素130的面积。所述红色发光单元221、所述绿色发光单元222以及所述蓝色发光单元223依次序阵列分布于所述透明基板21上。\n\n[0054]附图2中所标记的子像素130标记是虚拟标记，一般在制作显示面板100的时候都会平均等份的设置子像素区域，但是本发明在透明显示区120的显示面板并没有传统的像素结构，而预留的子像素虚拟标记是为了更好的制备MicroLED发光单元22。在所述透明显示区120标记的虚拟子像素与所述主显示区110的子像素的面积大小相同。\n\n[0055]所述MicroLED发光单元22长度为1～500um；所述液晶显示面板100子像素为10～1000um。所述MicroLED发光单元22长度要小于所述液晶显示面板的100子像素长度，进而可以保证所述MicroLED发光单元22的面积小于所述液晶显示面板的100子像素面积，一般所述MicroLED发光单元22的面积为所述液晶显示面板的100子像素面积的一般，进而可以保证所述透明显示区的高透光率。\n\n[0056]在选择所述MicroLED发光单元22长度实施例时，为确保所述MicroLED发光单元22的长度小于所述液晶显示面板100子像素的长度，所述MicroLED发光单元22的面积小于所述液晶显示面板100子像素的面积。最终可以达到所述透明显示区120的透明率为50％～100％，所述透明率越高越好，进而可以将外界光线更多的透过所述透明显示区120，所述传感器模块204可以接受更多的外界信号。\n\n[0057]所述红色发光单元221包括蓝色发光单元223以及涂覆所述蓝色发光单元223上的转化膜，通过所述蓝色发光单元223激发所述转化膜实现所述红色发光单元221的发光；所述绿色发光单元222包括蓝色发光单元223以及涂覆所述蓝色发光单元223上的转化膜，通过所述蓝色发光单元223激发所述转化膜实现所述蓝色发光单元223的发光；所述转化膜为量子点膜或荧光粉。\n\n[0058]所述封装层13设于所述MicroLED发光单元22以及上偏光片12上，用于隔绝水氧，用以保护所述MicroLED发光单元22以及所述液晶显示面板100。\n\n[0059]在所述透明显示区120，所述液晶显示面板100采用无源方式驱动或有源方式驱动；所述有源方式驱动包括非晶硅、铟镓锌氧化物以及低温多晶硅。\n\n[0060]如图3所示，所述上偏光片12可以采用in-cell结构或者on-cell结构，实现所述触控式显示面板的触控功能；在所述透明显示区120并没有所述上偏光片12结构。\n\n[0061]所述上偏光片12可以为金属线栅偏光片或涂布取向型偏光片。这样可以使得所述透明显示区120与主显示区110的子像素正常显示，从而实现所述透明显示区120与主显示区110无缝衔接，避免传统贴附性偏光片的偏贴精度较差的问题。\n\n[0062]如图4所示，若所述上偏光片12为金属线栅偏光片；则所述金属线栅偏光片包括透光基板124、介质层122以及若干条金属线栅123。\n\n[0063]所述介质层122设于所述透光基板124上；所述金属线栅123设于所述介质层122远离所述透光基板124的一侧。\n\n[0064]所述金属线栅123的周期为20～500nm，最优为200nm，也可以为50nm、100nm、300nm以及400nm；所述金属线栅123的占空比为0.1～0.9最优为0.5，也可以为0.2、0.3、0.6或0.8；所述金属线栅123的高度为10～500nm，最优为200nm，也可以为50nm、100nm、300nm或400nm。\n\n[0065]所述金属线栅123为Al、Ag或Au具有较大折射率的材料；所述介质层122材料包括SiO2、SiO、MgO、Si3N4、TiO2、Ta2O5。\n\n[0066]若所述上偏光片12为涂布取向型偏光片，则所述涂布取向型偏光片包括偏光子与取向性配体；所述上偏光片12通过涂布的方式精确涂布于所述主显示区110，然后通过拓印或者光配向的方式使得所述偏光子具有一致的取向，从而使得所述上偏光片12获得较好的偏振效果。\n\n[0067]本发明提及的所述透明显示区120的形状并未作出限定；一般为圆孔形状(参见图5或图8，图5适合摄像传感器，图8适合指纹识别传感器)，也可以为“水滴”(参见图6)、“凹槽屏”(参见图7)、方形屏(参见图9)以及“美人尖”。所述透明显示区120具有较小的面积，如小于10*10mm，且所述透明显示区120所需求的像素数目较少，从而可以保证所述透明显示区120的MicroLED的转印良率与成本控制。\n\n[0068]本发明提供一种显示装置10，通过在液晶显示面板100下传感器模块204的位置处实现透明显示，形成一透明显示区120。并且在该处堆叠方向上采用on-cell技术在彩膜基板上制作小面积MicroLED发光单元22。\n\n[0069]所述MicroLED显示采用RGB三色显示，且各个MicroLED发光单元22的大小小于子像素130大小，在子像素130内部无MicroLED发光单元22区域光线可以正常通过。(如图2标记的虚线区域内的发光单元区域，非发光单元区域可以正常透过光线。)\n\n[0070]因而在MicroLED发光单元22打开时所述透光显示区可以实现正常显示，同时在任意时刻可以透过所述透明显示区120区域采集图像进入屏下传感器，可以实现屏下指纹识别、屏下摄像头、屏下面部识别、屏下距离感知等各种屏下传感方案。\n\n[0071]同时所述透明显示区120与主显示区110无缝衔接，因而在视觉上没有任何显示中断及不连续边界(如notch、Hole等)，可以实现完全的全面屏设计。同时由于MicroLED具有高亮、长寿命特征，可以采用部分像素兼做补光灯、指示灯等功能。\n\n[0072]所述主显示区110通过纳米压印技术制备金属线栅偏光片或者通过涂布取向型偏光片，从而实现所述主显示区110与透光显示区无缝衔接，避免传统贴附性偏光片的偏贴精度较差的问题。\n\n[0073]应当指出，对于经充分说明的本发明来说，还可具有多种变换及改型的实施方案，并不局限于上述实施方式的具体实施例。上述实施例仅仅作为本发明的说明，而不是对发明的限制。总之，本发明的保护范围应包括那些对于本领域普通技术人员来说显而易见的变换或替代以及改型。', '技术领域\n\n[0001]本发明涉及显示领域，尤其是涉及一种显示装置。\n\n背景技术\n\n[0002]在中小尺寸显示领域，全面屏技术成为当前的重点研发方向，也即如何通过相关技术的开发实现人机交互界面的屏占比最大化。第一代全面屏技术主要集中于屏幕尺寸比例由16:9变化为18：9甚至更大；第二代全面屏就则是进一步地压缩屏幕上下左右的边界，甚至采用柔性折叠技术最大化可视面积。而近期全面屏的另一个研究方向则是如何将显示终端的指纹识别、摄像头、面部识别、距离传感等传感器进一步地融合进显示屏的显示区，使得显示屏从单纯的显示界面逐渐过渡到全面的感知、交互界面。\n\n[0003]目前主流的显示技术包括液晶显示器(LCD)和有机发光二极管(OLED)，其中LCD为被动发光技术，通过整面背光结构照射液晶盒实现光纤的亮暗控制，而OLED技术则是采用逐颗的OLED像素主动发光，因为相较而言具有高对比、轻薄、可弯曲、可折叠等优势。另一方面，基于OLED无法背光的特性，可以很好的与现行的光学指纹识别模组兼容，因而光学指纹识别成为目前OLED的“独有优势”，同时业界也在开发基于OLED的屏下摄像头方案，从而可以进一步在显示模式和摄像模式间切换并且无需现行LCD挖孔方案所造成的挖孔区无法显示等优势。\n\n[0004]MicroLED相较于OLED技术具有相似的主动发光特性，同时由于无机LED本身的稳定性与高效率等特点，在技术上较OLED具有寿命长、亮度高、chip尺寸小、响应时间长等优势，目前已经成为显示业界的重点开发方向之一。但是相较于传统面板技术通过刻蚀等“减法制造”方式，microLED主要依赖于加法制造方式，在技术成熟度上较低，特别是面临巨量显示画素转移时具有先天的制程良率与成本挑战，因而在短期内仍然难以成为真正成熟的显示技术。\n\n[0005]因此，有必要提出一种新的显示装置，解决了现有技术中摄像区与显示区的割裂造成视觉不完美的问题，实现真正的全面屏技术。\n\n发明内容\n\n[0006]本发明目的在于，提供一种显示装置，通过在透明显示区制作小面积MicroLED发光单元，因而在MicroLED发光单元打开时所述透明显示区可以实现正常显示，同时在任意时刻可以透过所述透明显示区采集图像进入屏下传感器，同时所述透明显示区与主显示区无缝衔接，因而在视觉上没有任何显示中断及不连续边界，可以实现完全的全面屏设计。\n\n[0007]本发明提供一种显示装置，包括背光模块；下偏光片，设于所述背光模块上，所述下偏光片设有一第二通孔；液晶显示面板，设于所述下偏光片远离所述背光模块的一侧，包括主显示区以及透明显示区，所述主显示区包围所述透明显示区；上偏光片，设于所述液晶显示面板远离所述下偏光片的一侧，所述上偏光片设有一第一通孔，所述第一通孔与所述第二通孔对应所述透明显示区；其中，所述第一通孔中设有若干MicroLED发光单元。\n\n[0008]进一步地，所述透明显示区设有一透明基板，所述透明基板设于所述液晶显示面板远离所述背光模块的一侧；所述MicroLED发光单元设于所述透明基板上。\n\n[0009]进一步地，所述MicroLED发光单元包括红色发光单元、绿色发光单元和蓝色发光单元；\n\n[0010]进一步地，所述MicroLED发光单元的面积小于所述液晶显示面板子像素的面积。\n\n[0011]进一步地，所述MicroLED发光单元长度为1～500um，所述液晶显示面板子像素为10～1000um；所述透明显示区的透光率为50％～100％。\n\n[0012]进一步地，所述红色发光单元包括蓝色发光单元以及涂覆所述蓝色发光单元上的转化膜，通过所述蓝色发光单元激发所述转化膜实现所述红色发光单元的发光；所述绿色发光单元包括蓝色发光单元以及涂覆所述蓝色发光单元上的转化膜，通过所述蓝色发光单元激发所述转化膜实现所述蓝色发光单元的发光；所述转化膜为量子点膜或荧光粉。\n\n[0013]进一步地，所述上偏光片为金属线栅偏光片；所述金属线栅偏光片包括：透光基板；介质层，设于所述透光基板上；若干条金属线栅，设于所述介质层远离所述透光基板的一侧；所述金属线栅的周期为20～500nm，占空比为0.1～0.9，高度为10～500nm。\n\n[0014]进一步地，所述金属线栅为Al、Ag或Au具有较大折射率的材料；所述介质层材料包括SiO2、SiO、MgO、Si3N4、TiO2、Ta2O5。\n\n[0015]进一步地，所述上偏光片为涂布取向型偏光片，包括偏光子与取向性配体。\n\n[0016]进一步地，所述背光模块为侧入式背光模块；所述背光模块包括：导光板，具有一通孔，所述通孔对应所述透明显示区；背光源，设于所述导光板的侧边；其中，所述通孔中设有一传感器模块；所述传感器模块包括且不限于指纹识别传感器、摄像传感器、结构光传感器、飞行时间传感器、距离传感器或光线传感器。\n\n[0017]本发明的有益效果是：本发明提供一种显示装置，通过在液晶显示面板下传感器模块的位置处实现透明显示，形成一透明显示区。在透明显示区制作小面积MicroLED发光单元，从而实现透明显示区的显示功能。所述MicroLED显示采用RGB三色显示，且各个MicroLED发光单元的大小小于子像素大小，在子像素内部无MicroLED发光单元区域光线可以正常通过，因而在MicroLED发光单元打开时该区域可以实现正常显示。同时所述透明显示区与主显示区无缝衔接，因而在视觉上没有任何显示中断及不连续边界(如notch、Hole等)，可以实现完全的全面屏设计。\n\n附图说明\n\n[0018]下面结合附图和实施例对本发明作进一步的描述。\n\n[0019]图1为本发明显示装置的结构示意图；\n\n[0020]图2为本发明显示装置的MicroLED发光单元的平面图；\n\n[0021]图3为本发明显示装置的偏光片的平面图；\n\n[0022]图4为本发明显示装置的金属线栅偏光片的结构示意图\n\n[0023]图5为本发明显示装置的摄像圆孔屏的结构示意图；\n\n[0024]图6为本发明显示装置的水滴屏的结构示意图；\n\n[0025]图7为本发明显示装置的凹槽屏的结构示意图；\n\n[0026]图8为本发明显示装置的指纹识别圆孔屏的结构示意图；\n\n[0027]图9为本发明显示装置的方形屏的结构示意图；\n\n[0028]显示装置10；\n\n[0029]液晶显示面板100；背光模块200；传感器模块204；。\n\n[0030]第一基板101；液晶层102；第二基板103；\n\n[0031]下偏光片11；上偏光片12；第一通孔111；\n\n[0032]第二通孔121；透明基板21；MicroLED发光单元22；\n\n[0033]红色发光单元221；绿色发光单元222；蓝色发光单元223；\n\n[0034]主显示区110；透明显示区120；导光板201；\n\n[0035]背光源202；通孔203；封装层13；\n\n[0036]子像素130；透光基板124；介质层122；\n\n[0037]金属线栅123。\n\n具体实施方式\n\n[0038]以下是各实施例的说明是参考附加的图式，用以例示本发明可以用实施的特定实施例。本发明所提到的方向用语，例如上、下、前、后、左、右、内、外、侧等，仅是参考附图式的方向。本发明提到的元件名称，例如第一、第二等，仅是区分不同的元部件，可以更好的表达。在图中，结构相似的单元以相同标号表示。\n\n[0039]本文将参照附图来详细描述本发明的实施例。本发明可以表现为许多不同形式，本发明不应仅被解释为本文阐述的具体实施例。本发明提供这些实施例是为了解释本发明的实际应用，从而使本领域其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改方案。\n\n[0040]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。\n\n[0041]如图1所示，本发明提供一种显示装置10，包括背光模块200、下偏光片11、液晶显示面板100以及上偏光片12。\n\n[0042]所述背光模块200为侧入式背光模块或直下式背光模块，本发明采用侧入式背光模块。\n\n[0043]所述背光模块200包括导光板201和背光源202。\n\n[0044]所述导光板201，具有一通孔203；所述背光源202设于所述导光板201的侧边；所述通孔203中设有一传感器模块204。\n\n[0045]所述传感器模块204包括且不限于指纹识别传感器、摄像传感器、结构光传感器、飞行时间传感器、距离传感器或光线传感器。\n\n[0046]所述下偏光片11设于所述背光模块200上；所述液晶显示面板100设于所述下偏光片11远离所述背光模块200的一侧。\n\n[0047]所述液晶显示面板100包括主显示区110以及透明显示区120，所述主显示区110包围所述透明显示区120。所述透明显示区120并没有像素电路，因此可以实现透明特性。所述导光板201的通孔203对应所述透明显示区120。\n\n[0048]所述液晶显示面板100包括：第一基板101、液晶层102以及第二基板103。所述第一基板101为TFT阵列基板，所述第二基板103为彩膜基板。\n\n[0049]所述液晶层102设于所述第一基板101远离所述背光模块200的一侧；所述第二基板103设于所述液晶层102远离所述第一基板101的一侧。\n\n[0050]所述上偏光片12设于所述液晶显示面板100远离所述下偏光片11的一侧；所述上偏光片12设有一第一通孔111，所述下偏光片11设有一第二通孔121；所述第一通孔111与所述第二通孔121对应所述透明显示区120。\n\n[0051]所述透明显示区120设有一透明基板21，所述透明基板21设于所述液晶显示面板100远离所述背光模块200的一侧；所述透明基板21为高透过率材料，例如Glass、ColorlessPI、PMMA等。\n\n[0052]所述透明基板21上设有若干MicroLED发光单元22。所述透明显示区120的MicroLED显示采用on-cell结构，通过在所述彩膜基板(即所述第二基板103)侧设置所述透明基板21，并在所述透明基板21上布置驱动走线以及TFT开关，用以驱动所述MicroLED发光单元22进行发光显示，并且可以实现所述透明显示区120的触控功能。\n\n[0053]如图2所示，所述MicroLED发光单元22包括红色发光单元221、绿色发光单元222以及蓝色发光单元223；所述MicroLED发光单元22的面积小于所述液晶显示面板100子像素130的面积。所述红色发光单元221、所述绿色发光单元222以及所述蓝色发光单元223依次序阵列分布于所述透明基板21上。\n\n[0054]附图2中所标记的子像素130标记是虚拟标记，一般在制作显示面板100的时候都会平均等份的设置子像素区域，但是本发明在透明显示区120的显示面板并没有传统的像素结构，而预留的子像素虚拟标记是为了更好的制备MicroLED发光单元22。在所述透明显示区120标记的虚拟子像素与所述主显示区110的子像素的面积大小相同。\n\n[0055]所述MicroLED发光单元22长度为1～500um；所述液晶显示面板100子像素为10～1000um。所述MicroLED发光单元22长度要小于所述液晶显示面板的100子像素长度，进而可以保证所述MicroLED发光单元22的面积小于所述液晶显示面板的100子像素面积，一般所述MicroLED发光单元22的面积为所述液晶显示面板的100子像素面积的一般，进而可以保证所述透明显示区的高透光率。\n\n[0056]在选择所述MicroLED发光单元22长度实施例时，为确保所述MicroLED发光单元22的长度小于所述液晶显示面板100子像素的长度，所述MicroLED发光单元22的面积小于所述液晶显示面板100子像素的面积。最终可以达到所述透明显示区120的透明率为50％～100％，所述透明率越高越好，进而可以将外界光线更多的透过所述透明显示区120，所述传感器模块204可以接受更多的外界信号。\n\n[0057]所述红色发光单元221包括蓝色发光单元223以及涂覆所述蓝色发光单元223上的转化膜，通过所述蓝色发光单元223激发所述转化膜实现所述红色发光单元221的发光；所述绿色发光单元222包括蓝色发光单元223以及涂覆所述蓝色发光单元223上的转化膜，通过所述蓝色发光单元223激发所述转化膜实现所述蓝色发光单元223的发光；所述转化膜为量子点膜或荧光粉。\n\n[0058]所述封装层13设于所述MicroLED发光单元22以及上偏光片12上，用于隔绝水氧，用以保护所述MicroLED发光单元22以及所述液晶显示面板100。\n\n[0059]在所述透明显示区120，所述液晶显示面板100采用无源方式驱动或有源方式驱动；所述有源方式驱动包括非晶硅、铟镓锌氧化物以及低温多晶硅。\n\n[0060]如图3所示，所述上偏光片12可以采用in-cell结构或者on-cell结构，实现所述触控式显示面板的触控功能；在所述透明显示区120并没有所述上偏光片12结构。\n\n[0061]所述上偏光片12可以为金属线栅偏光片或涂布取向型偏光片。这样可以使得所述透明显示区120与主显示区110的子像素正常显示，从而实现所述透明显示区120与主显示区110无缝衔接，避免传统贴附性偏光片的偏贴精度较差的问题。\n\n[0062]如图4所示，若所述上偏光片12为金属线栅偏光片；则所述金属线栅偏光片包括透光基板124、介质层122以及若干条金属线栅123。\n\n[0063]所述介质层122设于所述透光基板124上；所述金属线栅123设于所述介质层122远离所述透光基板124的一侧。\n\n[0064]所述金属线栅123的周期为20～500nm，最优为200nm，也可以为50nm、100nm、300nm以及400nm；所述金属线栅123的占空比为0.1～0.9最优为0.5，也可以为0.2、0.3、0.6或0.8；所述金属线栅123的高度为10～500nm，最优为200nm，也可以为50nm、100nm、300nm或400nm。\n\n[0065]所述金属线栅123为Al、Ag或Au具有较大折射率的材料；所述介质层122材料包括SiO2、SiO、MgO、Si3N4、TiO2、Ta2O5。\n\n[0066]若所述上偏光片12为涂布取向型偏光片，则所述涂布取向型偏光片包括偏光子与取向性配体；所述上偏光片12通过涂布的方式精确涂布于所述主显示区110，然后通过拓印或者光配向的方式使得所述偏光子具有一致的取向，从而使得所述上偏光片12获得较好的偏振效果。\n\n[0067]本发明提及的所述透明显示区120的形状并未作出限定；一般为圆孔形状(参见图5或图8，图5适合摄像传感器，图8适合指纹识别传感器)，也可以为“水滴”(参见图6)、“凹槽屏”(参见图7)、方形屏(参见图9)以及“美人尖”。所述透明显示区120具有较小的面积，如小于10*10mm，且所述透明显示区120所需求的像素数目较少，从而可以保证所述透明显示区120的MicroLED的转印良率与成本控制。\n\n[0068]本发明提供一种显示装置10，通过在液晶显示面板100下传感器模块204的位置处实现透明显示，形成一透明显示区120。并且在该处堆叠方向上采用on-cell技术在彩膜基板上制作小面积MicroLED发光单元22。\n\n[0069]所述MicroLED显示采用RGB三色显示，且各个MicroLED发光单元22的大小小于子像素130大小，在子像素130内部无MicroLED发光单元22区域光线可以正常通过。(如图2标记的虚线区域内的发光单元区域，非发光单元区域可以正常透过光线。)\n\n[0070]因而在MicroLED发光单元22打开时所述透光显示区可以实现正常显示，同时在任意时刻可以透过所述透明显示区120区域采集图像进入屏下传感器，可以实现屏下指纹识别、屏下摄像头、屏下面部识别、屏下距离感知等各种屏下传感方案。\n\n[0071]同时所述透明显示区120与主显示区110无缝衔接，因而在视觉上没有任何显示中断及不连续边界(如notch、Hole等)，可以实现完全的全面屏设计。同时由于MicroLED具有高亮、长寿命特征，可以采用部分像素兼做补光灯、指示灯等功能。\n\n[0072]所述主显示区110通过纳米压印技术制备金属线栅偏光片或者通过涂布取向型偏光片，从而实现所述主显示区110与透光显示区无缝衔接，避免传统贴附性偏光片的偏贴精度较差的问题。\n\n[0073]应当指出，对于经充分说明的本发明来说，还可具有多种变换及改型的实施方案，并不局限于上述实施方式的具体实施例。上述实施例仅仅作为本发明的说明，而不是对发明的限制。总之，本发明的保护范围应包括那些对于本领域普通技术人员来说显而易见的变换或替代以及改型。');
INSERT INTO `os_patent_instruction_text` VALUES (10699, 23753, '技术领域\n\n[0001]本发明涉及平面显示技术领域，尤其是，其中的一种背光模组、其制备方法及其显示装置。\n\n背景技术\n\n[0002]已知，背光模组为液晶显示器面板的关键零组件之一，其功能在于供应充足的亮度与分布均匀的光源，进而使得其所在的液晶显示器能够正常显示影像。\n\n[0003]具体来讲，业界常见的背光模组一般由光源、导光板、光学膜片、塑胶外框等组成，其中所述光源具有亮度高、寿命长、发光均匀等特点，目前光源主要有EL、CCFL及LED三种类型；若依光源分布位置不同则分为侧光式和直下式，其中所谓的直下式背光也被称为底背光式。\n\n[0004]其中，miniLED作为一种新型的直下式显示背光模组，由于其具有的高亮、高对比、可实现local dimming显示、异形可弯曲、窄边框等诸多优势，已逐渐成为成为业界关注的焦点。\n\n[0005]就其应用而言，由于成本及厚度方面的考量，目前miniLED背光模组在小尺寸显示屏上的使用，其成本价格还无法满足市场对其价格的要求，利基性不强。而在中尺寸车载及电竞显示屏上，miniLED优势较为突出，可利用其实现显示屏高亮度和高对比度的特性。\n\n[0006]进一步的，在中、大尺寸显示屏上使用的miniLED背光模组，由于其所在显示屏的尺寸较大，其内设置的单一灯板的尺寸不足以对应整个显示屏的背光需要，因此，其多采用多个灯板拼接的方式来达成预定大尺寸背光模组的制作。\n\n[0007]而对于拼接而言，不可避免的在于两相邻拼接灯板之间会存在一条较为明显的拼接缝隙，且灯板的尺寸由于多采用激光切割的方式来进行因而在灯板边缘易造成较明显的黑边现象，同时由于拼接组装公差，也会使得拼接缝隙位置的反射率与灯板其他位置的反射率有较大的差异，从而造成了拼接缝的亮度通常低于灯板其他位置。而所有这些因拼接以及自身导致的缺陷表现在其所应用的显示屏上，会出现显示中存在拼接暗线的问题且其不易消除，从而影响所在显示屏的显示品质。\n\n[0008]而目前业界对于这种拼接屏产生的暗线缺陷，暂时还没有对其有效的方案来克服解决。\n\n发明内容\n\n[0009]本发明的一个方面是提供一种背光模组，其采用新型的功能层结构设计，能够有效的消除其内设置的相邻灯板间的拼接缝或是灯板其他位置处的反射率差异，从而有效改善因拼接灯板表面反射率差异而造成的其所在显示装置的显示异常。\n\n[0010]本发明采用的技术方案如下：\n\n[0011]一种背光模组，其包括外框和设置于所述外框内的第一灯板和第二灯板，其中所述第一灯板和第二灯板是以拼接的方式设置在所述外框的底面上并于两者的相接处形成有一条拼接线。其中所述第一灯板包括第一基板和间隔设置在所述第一基板上的第一LED芯片，所述第二灯板包括第二基板和间隔设置在所述第二基板上的第二LED芯片。其中所述第一灯板和第二灯板的表面还设置有一层整体设置的白反膜片层，其在所述第一LED芯片和第二LED芯片所在位置设置有开口以将所述第一LED芯片和第二LED芯片露出，但其会将所述第一灯板的其他表面区域、第二灯板的其他表面区域以及两者间的所述拼接缝所在位置区域整体覆盖于下。\n\n[0012]进一步的，在不同实施方式中，其中所述第一灯板和第二灯板优选采用同类型的灯板结构，其中由于单个灯板其自身尺寸原因，使得大尺寸背光模组的外框内需要设置多个数量的灯板以实现大尺寸显示面板对于同等尺寸背光模组的使用需求，因而也就产生了如背景技术中所述的“拼接缝”所导致的区域内反光率不同的问题，而本发明则采用一种新型的结构设计，在这些拼接后的灯板表面整体设置一层白反膜片层，不仅将每个灯板的表面区域覆盖于其下，同时还连带将不同灯板间的拼接缝所在区域覆盖于其下，如此使得拼接后的不同灯板表面被同一白反膜片层所覆盖，也就是说，拼接后的灯板除设置LED芯片的表面外的各个区域上均设置有一层白反膜片层，而不在存有暴露于外的拼接缝区域或是灯板表面区域，从而实现了拼接后灯板整体表面的各个区域的反射率一致。\n\n[0013]进一步的，在不同实施方式中，其中所述白反膜片层厚度为50～100μm。优选的，其中所述白反膜片层的上表面不会超过其所覆盖灯板上设置的LED芯片的上表面，进而保证所述LED芯片较高的出光效率，也就是说，所述LED芯片的上部会从所述白反膜片层上设置的开口凸伸出所述白反膜片层外，其上表面会高出所述白反膜片层的上表面。\n\n[0014]进一步的，在不同实施方式中，其中所述第一灯板为CSP型或POB型mini-LED灯板中的一种。\n\n[0015]进一步的，在不同实施方式中，其中所述第二灯板为CSP型或POB型mini-LED灯板中的一种。\n\n[0016]进一步的，在不同实施方式中，其中所述第一灯板为蓝光灯板，其上方还设置有半透半反膜片、QD/荧光膜片、扩散片及棱镜片。其中所述半透半反膜片、QD/荧光膜片为蓝光灯板的色转换膜片，可实现白光出射，扩散片起到混光作用，棱镜片可增加正视角方向的亮度。\n\n[0017]进一步的，在不同实施方式中，其中所述第一灯板为白光灯板，其上方还设置有扩散片及棱镜片。\n\n[0018]进一步的，在不同实施方式中，其中所述第一基板包括铜底层、第一胶层、聚脂材料层(PI/FR4/BT等)、第二胶层、铜走线层和白油层，其中所述白油层厚度为5～10μm。\n\n[0019]本发明的又一方面是提供一种本发明涉及的所述背光模组的制备方法，其包括以下步骤：\n\n[0020]步骤S1、提供所述第一灯板和第二灯板，并将两者拼接设置在一外框底面上，其中所述第一灯板和第二灯板间的拼接处形成有一条拼接缝；\n\n[0021]步骤S2、提供一白反膜片，其在所述第一灯板和第二灯板的第一LED芯片和第二LED芯片位置对应设置有开口；将所述白反膜片贴合到拼接后的所述第一灯板和第二灯板上，其中所述第一LED芯片和第二LED芯片通过所述开口露出于所述白反膜片层外，而所述拼接缝则被覆盖在所述白反膜片层下。\n\n[0022]进一步的，在不同实施方式中，在步骤S2中，其中所述白反膜片上设置的开口是根据所述第一灯板和第二灯板上的白油开窗设计及两者间的拼接组装公差，利用刀模对所述白反膜片进行冲切成型进而露出作为白油开窗区的所述开口。\n\n[0023]进一步的，在不同实施方式中，在步骤S2中，其中所述白反膜片是通过压合工艺并结合其下表面设置的压敏胶层贴合在拼接后的所述第一灯板和第二灯板上。\n\n[0024]本发明的又一方面是提供一种显示装置，其包括显示面板和本发明涉及的所述背光模组。\n\n[0025]进一步的，在不同实施方式中，其中所述背光模组相对所述显示面板为直下式设置方式。\n\n[0026]相对于现有技术，本发明的有益效果是：本发明涉及的一种背光模组，其采用一种新型的结构设计，在对应大尺寸拼接后的多个灯板表面上整体设置一层白反膜片层，不仅将每个灯板除去LED芯片处的表面区域覆盖于其下，同时还连带将不同灯板间的拼接缝所在区域覆盖于其下，如此使得拼接后的不同灯板表面被同一白反膜片层所覆盖，也就是说，拼接后的灯板表面的各个区域上均设置有一层白反膜片层，而不在存有暴露于外的拼接缝区域，从而实现了拼接后灯板整体表面的各个区域的反射率一致。\n\n[0027]进一步的，所述整体设置的白反膜片层不仅覆盖了灯板间的拼接缝，同时还会覆盖各灯板边缘处由于激光切割而出现的黑边影响，以及不同灯板间拼接缝位置因拼接组装而出现的组装精度缺陷，从而保证了其所在显示屏的显示正常。也可以说，拼接后的灯板表面单独设置一层白反膜片层，能够将其下覆盖的这些拼接的灯板之间所构成的整体表面上的各种表面缺陷，统统覆盖于其下，而其对外则表现为一个无缺陷的整体表面，从而消除了其所在显示装置因这些拼接灯板的表面缺陷而导致出现的各种显示异常问题。\n\n附图说明\n\n[0028]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0029]图1为本发明的一个实施方式中提供的一种背光模组的结构示意图；\n\n[0030]图2是图1所示背光模组中的第一灯板的第一基板的结构示意图；以及\n\n[0031]图3是本发明涉及的又一实施方式提供的一种显示装置的结构示意图。\n\n具体实施方式\n\n[0032]以下将结合附图和实施例，对本发明涉及的一种背光模组、其制备方法及其显示装置的技术方案作进一步的详细描述。\n\n[0033]请参阅图1所示，本发明涉及的一个实施方式提供了一种背光模组，其包括外框100和设置于所述外框100内的第一灯板和第二灯板，其中所述第一灯板和第二灯板是拼接设置在所述外框100内，由于拼接的公差或是灯板本身制备上的原因等等，两者相接处形成有一条拼接线130。\n\n[0034]进一步的，其中所述第一灯板包括第一基板110和间隔设置在所述基板上的第一LED112芯片，所述第二灯板包括第二基板120和间隔设置在所述第二基板上的第二LED芯片122。\n\n[0035]而所述第一灯板和第二灯板的表面上还设置有一层整体设置的白反膜片层200，其在所述第一LED芯片112和第二LED芯片122所在位置设置有开口以将所述第一LED芯片112和第二LED芯片122露出，但会将所述第一灯板表面区域、第二灯板表面区域以及两者间的所述拼接缝130所在位置区域整体覆盖于下。\n\n[0036]进一步的，在不同实施方式中，根据不同的背光尺寸需要，所述外框100内可设置的灯板数量以及每一灯板的外形尺寸可随具体需要而定，并无限定。而上述的两个灯板的设置方式仅为对本发明创作构思的举例性说明，但不论是多少数量、何种尺寸灯板之间的拼接，所述白反膜片层200均为一层整体设置，并将这些灯板间的拼接缝区域覆盖于其下。\n\n[0037]其中所述白反膜片层200厚度为50～100μm。优选的，其中所述白反膜片层200的上表面不会超过其所覆盖灯板上设置的LED芯片112、122的上表面，进而保证所述LED芯片较高的出光效率，也就是说，所述LED芯片112、122会从所述白反膜片层200上设置的开口凸伸出所述白反膜片层200的上表面外。而两者间的高度差是随具体选用的LED芯片以及所述白反膜片层200具体选用的厚度而定，并无限定。\n\n[0038]具体而言，其中所述第一灯板可以是CSP型或POB型mini-LED灯板中的一种；所述第二灯板可以是CSP型或POB型mini-LED灯板中的一种。其中所述第一灯板与所述第二灯板优选为同类型灯板，但不限于。以下为避免不必要的赘述，仅以所述第一灯板为例，对其结构进行说明。\n\n[0039]其中，请参阅图2所示，其图示了所述第一基板110的结构，其具体包括铜底层101、第一胶层102、聚脂材料层(PI/FR4/BT等)103、第二胶层104、铜走线层105和白油层106。其中所述白油层106厚度优选为5～10μm，但不限于。其中所述第一LED芯片112具体可以是白光LED封装芯片固晶，也可以是蓝光LED封装芯片固晶，进而使得所述第一灯板成为蓝光灯板或是白光灯板。\n\n[0040]针对蓝光灯板而言，如图1所示，其上方设置的光学膜片架构包括半透半反膜片301、QD/荧光膜片302、扩散片303及棱镜片304，其中所述半透半反膜片301、QD/荧光膜片302为蓝光灯板的色转换膜片，可实现蓝光入射而白光出射，所述扩散片303起到混光作用，所述棱镜片可增加正视角方向的亮度。而对于白光灯板而言，由于其不需要进行颜色光转换为白色光，因此其灯板上方设置的光学膜片架构仅包括扩散片303及棱镜片304。\n\n[0041]进一步的，本发明的又一实施方式是提供了一种本发明涉及的所述背光模组的制备方法，包括以下步骤：\n\n[0042]步骤S1、提供一第一灯板和第二灯板，并将两者拼接设置在一外框底面上，所述第一灯板和第二灯板的拼接处形成有一条拼接缝；其中所述第一灯板和第二灯板具体可以是选用通过SMT作业成型的mini-LED灯板，然后将两者按照整版外形拼接成型，在通过双面胶方式固定在所述背光外框中。\n\n[0043]步骤S2、提供一白反膜片，其在所述第一灯板和第二灯板上分别设置的第一LED芯片和第二LED芯片位置处对应设置有开口；将所述白反膜片贴合到拼接后的所述第一灯板和第二灯板上，其中所述灯板上设置的LED芯片通过开口露出与于所述白反膜片层外，而所述拼接缝则被覆盖在所述白反膜片层下。\n\n[0044]具体来讲，其中所述白反膜片上设置的开口是根据所述第一灯板和第二灯板上的白油开窗设计及两者间的拼接组装公差，利用刀模对所述白反膜片进行冲切成型进而露出作为白油开窗区的所述开口，然后在通过压合工艺并结合其下表面设置的压敏胶层贴合在拼接后的所述第一灯板和第二灯板表面上。\n\n[0045]最后，在将所述光学膜片架构中的半透半反膜片、QD/荧光膜片、扩散片及棱镜片等上方膜片依次叠放在所述外框中并用口字胶进行封合，进而形成本发明的一个实施方式中涉及的一种mini-LED背光模组。\n\n[0046]本发明的又一实施方式是提供了一种显示装置，请参阅图3所示，其包括显示面板10和本发明涉及的所述背光模组20。其中所述背光模组20相对所述显示面板10为直下式设置方式。\n\n[0047]本发明涉及的一种背光模组，其采用一种新型的结构设计，在对应大尺寸拼接后的多个灯板表面上整体设置一层白反膜片层，不仅将每个灯板的表面区域覆盖于其下，同时还连带将不同灯板间的拼接缝所在区域覆盖于其下，如此使得拼接后的不同灯板表面被同一白反膜片层所覆盖，也就是说，拼接后的灯板表面的各个区域上均设置有一层白反膜片层，而不在存有暴露于外的拼接缝区域，从而实现了拼接后灯板整体表面的各个区域的反射率一致。\n\n[0048]进一步的，所述整体设置的白反膜片层不仅覆盖了灯板间的拼接缝，同时还会覆盖各灯板边缘处由于激光切割而出现的黑边影响，以及不同灯板间拼接缝位置因拼接组装而出现的组装精度缺陷，从而保证了其所在显示屏的显示正常。也可以说，拼接后的灯板表面单独设置一层白反膜片层，能够将其下覆盖的这些拼接的灯板之间所构成的整体表面上的各种表面缺陷，统统覆盖于其下，而其对外则表现为一个无缺陷的整体表面，从而消除了其所在显示装置因这些拼接灯板的表面缺陷而导致出现的各种显示异常问题。\n\n[0049]本发明的技术范围不仅仅局限于上述说明中的内容，本领域技术人员可以在不脱离本发明技术思想的前提下，对上述实施例进行多种变形和修改，而这些变形和修改均应当属于本发明的范围内。', '技术领域\n\n[0001]本发明涉及平面显示技术领域，尤其是，其中的一种背光模组、其制备方法及其显示装置。\n\n背景技术\n\n[0002]已知，背光模组为液晶显示器面板的关键零组件之一，其功能在于供应充足的亮度与分布均匀的光源，进而使得其所在的液晶显示器能够正常显示影像。\n\n[0003]具体来讲，业界常见的背光模组一般由光源、导光板、光学膜片、塑胶外框等组成，其中所述光源具有亮度高、寿命长、发光均匀等特点，目前光源主要有EL、CCFL及LED三种类型；若依光源分布位置不同则分为侧光式和直下式，其中所谓的直下式背光也被称为底背光式。\n\n[0004]其中，miniLED作为一种新型的直下式显示背光模组，由于其具有的高亮、高对比、可实现local dimming显示、异形可弯曲、窄边框等诸多优势，已逐渐成为成为业界关注的焦点。\n\n[0005]就其应用而言，由于成本及厚度方面的考量，目前miniLED背光模组在小尺寸显示屏上的使用，其成本价格还无法满足市场对其价格的要求，利基性不强。而在中尺寸车载及电竞显示屏上，miniLED优势较为突出，可利用其实现显示屏高亮度和高对比度的特性。\n\n[0006]进一步的，在中、大尺寸显示屏上使用的miniLED背光模组，由于其所在显示屏的尺寸较大，其内设置的单一灯板的尺寸不足以对应整个显示屏的背光需要，因此，其多采用多个灯板拼接的方式来达成预定大尺寸背光模组的制作。\n\n[0007]而对于拼接而言，不可避免的在于两相邻拼接灯板之间会存在一条较为明显的拼接缝隙，且灯板的尺寸由于多采用激光切割的方式来进行因而在灯板边缘易造成较明显的黑边现象，同时由于拼接组装公差，也会使得拼接缝隙位置的反射率与灯板其他位置的反射率有较大的差异，从而造成了拼接缝的亮度通常低于灯板其他位置。而所有这些因拼接以及自身导致的缺陷表现在其所应用的显示屏上，会出现显示中存在拼接暗线的问题且其不易消除，从而影响所在显示屏的显示品质。\n\n[0008]而目前业界对于这种拼接屏产生的暗线缺陷，暂时还没有对其有效的方案来克服解决。\n\n发明内容\n\n[0009]本发明的一个方面是提供一种背光模组，其采用新型的功能层结构设计，能够有效的消除其内设置的相邻灯板间的拼接缝或是灯板其他位置处的反射率差异，从而有效改善因拼接灯板表面反射率差异而造成的其所在显示装置的显示异常。\n\n[0010]本发明采用的技术方案如下：\n\n[0011]一种背光模组，其包括外框和设置于所述外框内的第一灯板和第二灯板，其中所述第一灯板和第二灯板是以拼接的方式设置在所述外框的底面上并于两者的相接处形成有一条拼接线。其中所述第一灯板包括第一基板和间隔设置在所述第一基板上的第一LED芯片，所述第二灯板包括第二基板和间隔设置在所述第二基板上的第二LED芯片。其中所述第一灯板和第二灯板的表面还设置有一层整体设置的白反膜片层，其在所述第一LED芯片和第二LED芯片所在位置设置有开口以将所述第一LED芯片和第二LED芯片露出，但其会将所述第一灯板的其他表面区域、第二灯板的其他表面区域以及两者间的所述拼接缝所在位置区域整体覆盖于下。\n\n[0012]进一步的，在不同实施方式中，其中所述第一灯板和第二灯板优选采用同类型的灯板结构，其中由于单个灯板其自身尺寸原因，使得大尺寸背光模组的外框内需要设置多个数量的灯板以实现大尺寸显示面板对于同等尺寸背光模组的使用需求，因而也就产生了如背景技术中所述的“拼接缝”所导致的区域内反光率不同的问题，而本发明则采用一种新型的结构设计，在这些拼接后的灯板表面整体设置一层白反膜片层，不仅将每个灯板的表面区域覆盖于其下，同时还连带将不同灯板间的拼接缝所在区域覆盖于其下，如此使得拼接后的不同灯板表面被同一白反膜片层所覆盖，也就是说，拼接后的灯板除设置LED芯片的表面外的各个区域上均设置有一层白反膜片层，而不在存有暴露于外的拼接缝区域或是灯板表面区域，从而实现了拼接后灯板整体表面的各个区域的反射率一致。\n\n[0013]进一步的，在不同实施方式中，其中所述白反膜片层厚度为50～100μm。优选的，其中所述白反膜片层的上表面不会超过其所覆盖灯板上设置的LED芯片的上表面，进而保证所述LED芯片较高的出光效率，也就是说，所述LED芯片的上部会从所述白反膜片层上设置的开口凸伸出所述白反膜片层外，其上表面会高出所述白反膜片层的上表面。\n\n[0014]进一步的，在不同实施方式中，其中所述第一灯板为CSP型或POB型mini-LED灯板中的一种。\n\n[0015]进一步的，在不同实施方式中，其中所述第二灯板为CSP型或POB型mini-LED灯板中的一种。\n\n[0016]进一步的，在不同实施方式中，其中所述第一灯板为蓝光灯板，其上方还设置有半透半反膜片、QD/荧光膜片、扩散片及棱镜片。其中所述半透半反膜片、QD/荧光膜片为蓝光灯板的色转换膜片，可实现白光出射，扩散片起到混光作用，棱镜片可增加正视角方向的亮度。\n\n[0017]进一步的，在不同实施方式中，其中所述第一灯板为白光灯板，其上方还设置有扩散片及棱镜片。\n\n[0018]进一步的，在不同实施方式中，其中所述第一基板包括铜底层、第一胶层、聚脂材料层(PI/FR4/BT等)、第二胶层、铜走线层和白油层，其中所述白油层厚度为5～10μm。\n\n[0019]本发明的又一方面是提供一种本发明涉及的所述背光模组的制备方法，其包括以下步骤：\n\n[0020]步骤S1、提供所述第一灯板和第二灯板，并将两者拼接设置在一外框底面上，其中所述第一灯板和第二灯板间的拼接处形成有一条拼接缝；\n\n[0021]步骤S2、提供一白反膜片，其在所述第一灯板和第二灯板的第一LED芯片和第二LED芯片位置对应设置有开口；将所述白反膜片贴合到拼接后的所述第一灯板和第二灯板上，其中所述第一LED芯片和第二LED芯片通过所述开口露出于所述白反膜片层外，而所述拼接缝则被覆盖在所述白反膜片层下。\n\n[0022]进一步的，在不同实施方式中，在步骤S2中，其中所述白反膜片上设置的开口是根据所述第一灯板和第二灯板上的白油开窗设计及两者间的拼接组装公差，利用刀模对所述白反膜片进行冲切成型进而露出作为白油开窗区的所述开口。\n\n[0023]进一步的，在不同实施方式中，在步骤S2中，其中所述白反膜片是通过压合工艺并结合其下表面设置的压敏胶层贴合在拼接后的所述第一灯板和第二灯板上。\n\n[0024]本发明的又一方面是提供一种显示装置，其包括显示面板和本发明涉及的所述背光模组。\n\n[0025]进一步的，在不同实施方式中，其中所述背光模组相对所述显示面板为直下式设置方式。\n\n[0026]相对于现有技术，本发明的有益效果是：本发明涉及的一种背光模组，其采用一种新型的结构设计，在对应大尺寸拼接后的多个灯板表面上整体设置一层白反膜片层，不仅将每个灯板除去LED芯片处的表面区域覆盖于其下，同时还连带将不同灯板间的拼接缝所在区域覆盖于其下，如此使得拼接后的不同灯板表面被同一白反膜片层所覆盖，也就是说，拼接后的灯板表面的各个区域上均设置有一层白反膜片层，而不在存有暴露于外的拼接缝区域，从而实现了拼接后灯板整体表面的各个区域的反射率一致。\n\n[0027]进一步的，所述整体设置的白反膜片层不仅覆盖了灯板间的拼接缝，同时还会覆盖各灯板边缘处由于激光切割而出现的黑边影响，以及不同灯板间拼接缝位置因拼接组装而出现的组装精度缺陷，从而保证了其所在显示屏的显示正常。也可以说，拼接后的灯板表面单独设置一层白反膜片层，能够将其下覆盖的这些拼接的灯板之间所构成的整体表面上的各种表面缺陷，统统覆盖于其下，而其对外则表现为一个无缺陷的整体表面，从而消除了其所在显示装置因这些拼接灯板的表面缺陷而导致出现的各种显示异常问题。\n\n附图说明\n\n[0028]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0029]图1为本发明的一个实施方式中提供的一种背光模组的结构示意图；\n\n[0030]图2是图1所示背光模组中的第一灯板的第一基板的结构示意图；以及\n\n[0031]图3是本发明涉及的又一实施方式提供的一种显示装置的结构示意图。\n\n具体实施方式\n\n[0032]以下将结合附图和实施例，对本发明涉及的一种背光模组、其制备方法及其显示装置的技术方案作进一步的详细描述。\n\n[0033]请参阅图1所示，本发明涉及的一个实施方式提供了一种背光模组，其包括外框100和设置于所述外框100内的第一灯板和第二灯板，其中所述第一灯板和第二灯板是拼接设置在所述外框100内，由于拼接的公差或是灯板本身制备上的原因等等，两者相接处形成有一条拼接线130。\n\n[0034]进一步的，其中所述第一灯板包括第一基板110和间隔设置在所述基板上的第一LED112芯片，所述第二灯板包括第二基板120和间隔设置在所述第二基板上的第二LED芯片122。\n\n[0035]而所述第一灯板和第二灯板的表面上还设置有一层整体设置的白反膜片层200，其在所述第一LED芯片112和第二LED芯片122所在位置设置有开口以将所述第一LED芯片112和第二LED芯片122露出，但会将所述第一灯板表面区域、第二灯板表面区域以及两者间的所述拼接缝130所在位置区域整体覆盖于下。\n\n[0036]进一步的，在不同实施方式中，根据不同的背光尺寸需要，所述外框100内可设置的灯板数量以及每一灯板的外形尺寸可随具体需要而定，并无限定。而上述的两个灯板的设置方式仅为对本发明创作构思的举例性说明，但不论是多少数量、何种尺寸灯板之间的拼接，所述白反膜片层200均为一层整体设置，并将这些灯板间的拼接缝区域覆盖于其下。\n\n[0037]其中所述白反膜片层200厚度为50～100μm。优选的，其中所述白反膜片层200的上表面不会超过其所覆盖灯板上设置的LED芯片112、122的上表面，进而保证所述LED芯片较高的出光效率，也就是说，所述LED芯片112、122会从所述白反膜片层200上设置的开口凸伸出所述白反膜片层200的上表面外。而两者间的高度差是随具体选用的LED芯片以及所述白反膜片层200具体选用的厚度而定，并无限定。\n\n[0038]具体而言，其中所述第一灯板可以是CSP型或POB型mini-LED灯板中的一种；所述第二灯板可以是CSP型或POB型mini-LED灯板中的一种。其中所述第一灯板与所述第二灯板优选为同类型灯板，但不限于。以下为避免不必要的赘述，仅以所述第一灯板为例，对其结构进行说明。\n\n[0039]其中，请参阅图2所示，其图示了所述第一基板110的结构，其具体包括铜底层101、第一胶层102、聚脂材料层(PI/FR4/BT等)103、第二胶层104、铜走线层105和白油层106。其中所述白油层106厚度优选为5～10μm，但不限于。其中所述第一LED芯片112具体可以是白光LED封装芯片固晶，也可以是蓝光LED封装芯片固晶，进而使得所述第一灯板成为蓝光灯板或是白光灯板。\n\n[0040]针对蓝光灯板而言，如图1所示，其上方设置的光学膜片架构包括半透半反膜片301、QD/荧光膜片302、扩散片303及棱镜片304，其中所述半透半反膜片301、QD/荧光膜片302为蓝光灯板的色转换膜片，可实现蓝光入射而白光出射，所述扩散片303起到混光作用，所述棱镜片可增加正视角方向的亮度。而对于白光灯板而言，由于其不需要进行颜色光转换为白色光，因此其灯板上方设置的光学膜片架构仅包括扩散片303及棱镜片304。\n\n[0041]进一步的，本发明的又一实施方式是提供了一种本发明涉及的所述背光模组的制备方法，包括以下步骤：\n\n[0042]步骤S1、提供一第一灯板和第二灯板，并将两者拼接设置在一外框底面上，所述第一灯板和第二灯板的拼接处形成有一条拼接缝；其中所述第一灯板和第二灯板具体可以是选用通过SMT作业成型的mini-LED灯板，然后将两者按照整版外形拼接成型，在通过双面胶方式固定在所述背光外框中。\n\n[0043]步骤S2、提供一白反膜片，其在所述第一灯板和第二灯板上分别设置的第一LED芯片和第二LED芯片位置处对应设置有开口；将所述白反膜片贴合到拼接后的所述第一灯板和第二灯板上，其中所述灯板上设置的LED芯片通过开口露出与于所述白反膜片层外，而所述拼接缝则被覆盖在所述白反膜片层下。\n\n[0044]具体来讲，其中所述白反膜片上设置的开口是根据所述第一灯板和第二灯板上的白油开窗设计及两者间的拼接组装公差，利用刀模对所述白反膜片进行冲切成型进而露出作为白油开窗区的所述开口，然后在通过压合工艺并结合其下表面设置的压敏胶层贴合在拼接后的所述第一灯板和第二灯板表面上。\n\n[0045]最后，在将所述光学膜片架构中的半透半反膜片、QD/荧光膜片、扩散片及棱镜片等上方膜片依次叠放在所述外框中并用口字胶进行封合，进而形成本发明的一个实施方式中涉及的一种mini-LED背光模组。\n\n[0046]本发明的又一实施方式是提供了一种显示装置，请参阅图3所示，其包括显示面板10和本发明涉及的所述背光模组20。其中所述背光模组20相对所述显示面板10为直下式设置方式。\n\n[0047]本发明涉及的一种背光模组，其采用一种新型的结构设计，在对应大尺寸拼接后的多个灯板表面上整体设置一层白反膜片层，不仅将每个灯板的表面区域覆盖于其下，同时还连带将不同灯板间的拼接缝所在区域覆盖于其下，如此使得拼接后的不同灯板表面被同一白反膜片层所覆盖，也就是说，拼接后的灯板表面的各个区域上均设置有一层白反膜片层，而不在存有暴露于外的拼接缝区域，从而实现了拼接后灯板整体表面的各个区域的反射率一致。\n\n[0048]进一步的，所述整体设置的白反膜片层不仅覆盖了灯板间的拼接缝，同时还会覆盖各灯板边缘处由于激光切割而出现的黑边影响，以及不同灯板间拼接缝位置因拼接组装而出现的组装精度缺陷，从而保证了其所在显示屏的显示正常。也可以说，拼接后的灯板表面单独设置一层白反膜片层，能够将其下覆盖的这些拼接的灯板之间所构成的整体表面上的各种表面缺陷，统统覆盖于其下，而其对外则表现为一个无缺陷的整体表面，从而消除了其所在显示装置因这些拼接灯板的表面缺陷而导致出现的各种显示异常问题。\n\n[0049]本发明的技术范围不仅仅局限于上述说明中的内容，本领域技术人员可以在不脱离本发明技术思想的前提下，对上述实施例进行多种变形和修改，而这些变形和修改均应当属于本发明的范围内。');
INSERT INTO `os_patent_instruction_text` VALUES (10700, 23754, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种背光模组及车载显示装置。\n\n背景技术\n\n[0002]随着车辆和交通技术领域的发展，车辆在使用过程中所需承载的信息越来越多，驾驶员对信息交互的需求也原来越高。作为车辆信息载体的一种，车载显示屏可通过视频图像画面播放等方式，可直观有效地实现大量信息的传播与交互。\n\n[0003]目前车载液晶显示装置的背光源与扩散板之间由框胶隔离以形成一定距离的混光间隙，但由于框胶的材质较硬，不利于调节背光源与扩散板之间的混光距离和扩散板厚度的配比，容易导致产生“满天星”灯影的问题，影响显示装置的显示效果，并且胶框的成本较高、生产工艺复杂，不利于实际生产。\n\n[0004]综上所述，现有车载显示装置存在混光距离不易调节导致显示效果不佳的问题。故，有必要提供一种背光模组及车载显示装置来改善这一缺陷。\n\n发明内容\n\n[0005]本揭示实施例提供一种背光模组及车载显示装置，用于解决现有车载显示装置存在的混光距离不易调节导致显示效果不佳的问题。\n\n[0006]本揭示实施例提供一种背光模组，包括：\n\n[0007]背板；\n\n[0008]灯板，所述灯板设置于所述背板上；\n\n[0009]扩散板，所述扩散板设置于所述灯板远离所述背板的一侧上；以及\n\n[0010]支架层，所述支架层设置于所述灯板与所述扩散板之间，用于支撑所述扩散板，并隔开所述灯板与所述扩散板以形成混光空间。\n\n[0011]根据本揭示一实施例，所述灯板包括电路板以及阵列排布于所述电路板上的多个微发光二极管，所述支架层设置于所述电路板的边缘。\n\n[0012]根据本揭示一实施例，所述支架层靠近所述灯板的一侧设有凹槽，所述凹槽与所述灯板之间形成容置空间。\n\n[0013]根据本揭示一实施例，所述电路板在位于所述容置空间的部分设有金手指端，所述电路板的线路均连接至所述金手指端，所述背光模组还包括柔性电路板，所述柔性电路板通过设置于所述背板上的开孔延伸至所述容置空间内，并与所述金手指端绑定连接。\n\n[0014]根据本揭示一实施例，所述电路板在位于所述容置空间的部分设有连接器，所述灯板的线路均连接至所述连接器，所述背光模组还包括柔性电路板，所述柔性电路板通过设置于所述背板上的开孔延伸至所述容置空间，并与所述连接器插接。\n\n[0015]根据本揭示一实施例，所述背光模组还包括胶框，所述胶框由所述背板外侧弯折至所述背板内侧，配置成用于支撑显示面板。\n\n[0016]根据本揭示一实施例，所述背光模组还包括层叠设置于所述扩散板上的第一棱镜片和第二棱镜片，所述第二棱镜片与弯折至所述背板内侧的所述框胶之间形成间隙。\n\n[0017]根据本揭示一实施例，所述间隙的厚度范围为0.2mm～0.3mm。\n\n[0018]根据本揭示一实施例，所述支架层的材料包括橡胶。\n\n[0019]本揭示实施例还提供一种车载显示装置，包括如上述的背光模组。\n\n[0020]本揭示实施例的有益效果：本揭示实施例通过在背光模组的扩散板与灯板之间设置支架层，所述支架层用于支撑所述扩散板，并隔开所述灯板与所述扩散板以形成混光空间，通过调节支架层的高度，可以方便地调节控制扩散板与灯板之间形成的混光空间的距离，从而优化“满天星”灯影的问题，提高背光模组以及车载显示装置的背光显示效果。\n\n附图说明\n\n[0021]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是揭示的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0022]图1为本揭示实施例一提供的背光模组的截面结构示意图；\n\n[0023]图2为本揭示实施例一提供的背光模组的平面结构示意图；\n\n[0024]图3为本揭示实施例二提供的背光模组的截面结构示意图；\n\n[0025]图4为本揭示实施例二提供的背光模组的平面结构示意图。\n\n具体实施方式\n\n[0026]以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。\n\n[0027]下面结合附图和具体实施例对本揭示做进一步的说明：\n\n[0028]实施例一：\n\n[0029]本揭示实施例提供一种背光模组，下面结合图1至图2进行详细说明。\n\n[0030]如图1所示，图1为本揭示实施例提供的背光模组100的截面结构示意图，所述背光模组100包括背板110、灯板120和支架层130，所述灯板120通过导热胶带贴附于所述背板110上，所述扩散板130设置于所述灯板120远离所述背板110的一侧上，所述支架层140设置于所述灯板120与所述扩散板130之间，用于支撑所述扩散板130，并隔开所述灯板120与所述扩散板130以形成混光空间141，所述灯板120与所述扩散板130相邻的两个表面之间的空隙即为所述混光空间141，所述灯板120作为光源发出的光线在所述混光空间141内直接形成面光源。\n\n[0031]在本实施例中，所述灯板120包括电路板121和微发光二极管122。如图2所示，图2为本揭示实施例提供的背光模组100的平面结构示意图，图2中仅表示出部分微发光二极管122以及部分支架层140，所述微发光二极管122阵列排布于所述电路板121上，所述支架层140设置于所述电路板122的四周边缘，并包围所述阵列排布的多个微发光二极管121。\n\n[0032]在本实施例中，所述支架层140的材料包括橡胶，相较于原本胶框的材质，橡胶材料较为柔软，因此可以通过按压等方式调整以橡胶为原材料的支架层140的厚度，直接调整混光空间141沿背光模组100厚度方向的距离，在本实施例所提供的背光模组100的结构中，支架层140的厚度即为混光空间141的距离，通过将混光空间141的距离调整到与所述扩散板130合适的配比，使得微发光二极管122发出的光线较为均匀的抵达显示面板200，从而有效优化“满天星”灯影的问题，提升背光模组100以及显示面板200的显示效果。同时，橡胶的制作成本低于胶框的制作成本，并且橡胶的制作工艺也较胶框的制作工艺简单，因此，用橡胶形成的支架层140代替原本的胶框，可以简化生产工艺，减少生产成本。\n\n[0033]在本实施例中，如图1所示，所述支架层140靠近所述灯板121的一侧设有凹槽，所述凹槽与所述灯板121之间形成容置空间，所述电路板121在位于所述容置空间的部分设有金手指端(图中未示出)，所述电路板121的线路均连接至所述金手指端，所述背光模组100还包括柔性电路板180，所述柔性电路板180通过设置于所述背板110上的开孔延伸至所述容置空间内，并与所述金手指端绑定连接。通过将柔性电路板180与金手指端绑定连接的位置设置于支架层140与电路板120形成的容置空间内，可以省去金手指端原本占据的空间，从而可以减小支架层140在平面结构中的宽度，进而减小背光模组100下边框的宽度，有效提升车载显示装置的屏占比。\n\n[0034]如图2所示，所述支架层140分为相互连接的多个部分，分别对应于电路板121的四个周边，图2中仅展示出相互连接的第一部分141和第二部分142。其中，所述第一部分141和所述第二部分142均设置成长条状，且所述第一部分141在与第二部分142连接的部分设置成L型，所述第二部分142的一端与所述L型的凹槽相互配合搭接，有效提升支架层140的稳定性，以提高可靠性测试的可靠度。当然，所述支架层140其他部分的连接同样可以参考第一部分141和第二部分142的连接方式，在一些实施例中，所述支架层140的多个部分也可以设计成其他的配合连接的方式，当然所述支架层140也可以根据实际需求设计成为一个整体。\n\n[0035]在一些实施例中，根据灯板120的电路板121上电路的复杂程度和分区情况，电路板121上的设置的金手指端数量可以为多个，对于电路板121上分区较少时，所有的金手指端可以都设置于电路板121的一侧边缘，对于电路复杂程度较高，分区较多的电路板，可以将金手指端设置于电路板121相对的上下或左右两侧的边缘，此时，对应两侧的支架层140均需要形成相应的凹槽对金手指端和柔性电路板进行避空设计。\n\n[0036]在本实施例中，如图1所示，所述背光模组100还包括胶框160，所述胶框160由所述背板110的外侧弯折至所述背板110的内侧，配置成用于支撑显示面板200，所述胶框160与所述显示面板200之间设置有泡棉胶170，用于保护所述显示面板200。所述显示面板200包括依次层叠设置的第一偏光片210、阵列基板220、彩膜基板230和第二偏光片240。\n\n[0037]在本实施例中，所述背光模组100还包括层叠设置于所述扩散板130上的第一棱镜片150和第二棱镜片151，所述第一棱镜片150与所述第二棱镜片151的尺寸相同，所述第二棱镜片152与弯折至所述背板110内侧的所述框胶160之间形成间隙161，所述间隙161用于在可靠性测试中，给上述棱镜片预留一定的膨胀扩展空间，防止由于棱镜片翘曲等导致的显示不良。\n\n[0038]优选的，所述间隙161的厚度范围为0.2mm～0.3mm。\n\n[0039]本揭示实施例通过在背光模组100的扩散板130与灯板120之间设置支架层140，所述支架层140用于支撑所述扩散板130，并隔开所述灯板120与所述扩散板130以形成混光空间141，通过调节支架层140的高度，可以方便地调节控制扩散板130与灯板120之间形成的混光空间141的距离，从而优化“满天星”灯影的问题，提高背光模组100背光显示效果。\n\n[0040]实施例二：\n\n[0041]本揭示实施例提供一种背光模组，下面结合图3至图4进行详细说明。\n\n[0042]如图3所示，图3为本揭示实施例提供的背光模组300的截面结构示意图，所述背光模组300包括背板310、灯板320和支架层330，所述灯板320通过导热胶带贴附于所述背板310上，所述扩散板330设置于所述灯板320远离所述背板310的一侧上，所述支架层340设置于所述灯板320与所述扩散板330之间，用于支撑所述扩散板330，并隔开所述灯板320与所述扩散板330以形成混光空间341，所述灯板320与所述扩散板330相邻的两个表面之间的空隙即为所述混光空间341，所述灯板320作为光源发出的光线在所述混光空间341内直接形成面光源。\n\n[0043]在本实施例中，所述灯板320包括电路板321和微发光二极管322。如图4所示，图4为本揭示实施例提供的背光模组200的平面结构示意图，图4中仅表示出部分微发光二极管322以及部分支架层340，所述微发光二极管322阵列排布于所述电路板321上，所述支架层340设置于所述电路板322的四周边缘，并包围所述阵列排布的多个微发光二极管321。\n\n[0044]在本实施例中，所述支架层340的材料包括橡胶，相较于原本胶框的材质，橡胶材料较为柔软，因此可以通过按压等方式调整以橡胶为原材料的支架层340的厚度，直接调整混光空间341沿背光模组300厚度方向的距离，在本实施例所提供的背光模组300的结构中，支架层340的厚度即为混光空间341的距离，通过将混光空间341的距离调整到与所述扩散板330合适的配比，使得微发光二极管322发出的光线较为均匀的抵达显示面板300，从而有效优化“满天星”灯影的问题，提升背光模组300以及显示面板400的显示效果。同时，橡胶的制作成本低于胶框的制作成本，并且橡胶的制作工艺也较胶框的制作工艺简单，因此，用橡胶形成的支架层340代替原本的胶框，可以简化生产工艺，减少生产成本。\n\n[0045]在本实施例中，如图3所示，所述支架层340靠近所述灯板321的一侧设有凹槽，所述凹槽与所述灯板321之间形成容置空间，所述电路板321在位于所述容置空间的部分设有连接器323，所述灯板321的线路均连接至所述连接器323，所述背光模组300还包括柔性电路板380，所述柔性电路板380通过设置于所述背板310上的开孔延伸至所述容置空间，并与所述连接器323插接。通过将连接器323容置空间内，可以省去连接器323原本占据的空间，从而可以减小支架层340在平面结构中的宽度，进而减小背光模组300下边框的宽度，有效提升车载显示装置的屏占比。\n\n[0046]在一些实施例中，根据灯板320的电路板321上电路的复杂程度和分区情况，电路板321上的设置的连接器323数量可以为多个，对于电路板321上分区较少时，所有的连接器323可以都设置于电路板321的一侧边缘，对于电路复杂程度较高，分区较多的电路板，可以将连接器323设置于电路板321相对的上下或左右两侧的边缘，此时，对应两侧的支架层340均需要形成相应的凹槽对连接器323和柔性电路板进行避空设计。\n\n[0047]优选的，所述连接器323的厚度应小于混光空间341和微发光二极管322的厚度之和，同时，连接器323的边缘与容置空间的边缘间隔应大于或等于0.5mm，以便于连接器323以及支架层340的装配。\n\n[0048]如图4所示，所述支架层340分为相互连接的多个部分，分别对应于电路板321的四个周边，图4中仅展示出相互连接的第一部分341和第二部分342。其中，所述第一部分341在与第二部分342连接的部分设置成L型，所述第二部分342的一端与所述L型的凹槽相互配合搭接，有效提升支架层340的稳定性，以提高可靠性测试的可靠度。当然，所述支架层340其他部分的连接同样可以参考第一部分341和第二部分342的连接方式，在一些实施例中，所述支架层340的多个部分也可以设计成其他的配合连接的方式，当然所述支架层340也可以根据实际需求设计成为一个整体。\n\n[0049]在本实施例中，如图3所示，所述背光模组300还包括胶框360，所述胶框360由所述背板310的外侧弯折至所述背板310的内侧，配置成用于支撑显示面板400，所述胶框360与所述显示面板400之间设置有泡棉胶370，用于保护所述显示面板400。所述显示面板400包括依次层叠设置的第一偏光片410、阵列基板420、彩膜基板430和第二偏光片440。\n\n[0050]在本实施例中，所述背光模组300还包括层叠设置于所述扩散板330上的第一棱镜片350和第二棱镜片351，所述第一棱镜片350与所述第二棱镜片351的尺寸相同，所述第二棱镜片352与弯折至所述背板310内侧的所述框胶360之间形成间隙361，所述间隙361用于在可靠性测试中，给上述棱镜片预留一定的膨胀扩展空间，防止由于棱镜片翘曲等导致的显示不良。\n\n[0051]优选的，所述间隙361的厚度范围为0.2mm～0.3mm。\n\n[0052]本揭示实施例通过在背光模组300的扩散板330与灯板320之间设置支架层340，所述支架层340用于支撑所述扩散板330，并隔开所述灯板320与所述扩散板330以形成混光空间341，通过调节支架层340的高度，可以方便地调节控制扩散板330与灯板320之间形成的混光空间341的距离，从而优化“满天星”灯影的问题，提高背光模组300背光显示效果。\n\n[0053]本揭示实施例还提供了一种车载显示装置，包括如上述实施例所提供的背光模组，且能够实现与上述实施例所提供的背光模组相同的技术效果，此处不再赘述。\n\n[0054]综上所述，虽然本揭示以优选实施例揭露如上，但上述优选实施例并非用以限制本揭示，本领域的普通技术人员，在不脱离本揭示的精神和范围内，均可作各种更动与润饰，因此本揭示的保护范围以权利要求界定的范围为基准。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种背光模组及车载显示装置。\n\n背景技术\n\n[0002]随着车辆和交通技术领域的发展，车辆在使用过程中所需承载的信息越来越多，驾驶员对信息交互的需求也原来越高。作为车辆信息载体的一种，车载显示屏可通过视频图像画面播放等方式，可直观有效地实现大量信息的传播与交互。\n\n[0003]目前车载液晶显示装置的背光源与扩散板之间由框胶隔离以形成一定距离的混光间隙，但由于框胶的材质较硬，不利于调节背光源与扩散板之间的混光距离和扩散板厚度的配比，容易导致产生“满天星”灯影的问题，影响显示装置的显示效果，并且胶框的成本较高、生产工艺复杂，不利于实际生产。\n\n[0004]综上所述，现有车载显示装置存在混光距离不易调节导致显示效果不佳的问题。故，有必要提供一种背光模组及车载显示装置来改善这一缺陷。\n\n发明内容\n\n[0005]本揭示实施例提供一种背光模组及车载显示装置，用于解决现有车载显示装置存在的混光距离不易调节导致显示效果不佳的问题。\n\n[0006]本揭示实施例提供一种背光模组，包括：\n\n[0007]背板；\n\n[0008]灯板，所述灯板设置于所述背板上；\n\n[0009]扩散板，所述扩散板设置于所述灯板远离所述背板的一侧上；以及\n\n[0010]支架层，所述支架层设置于所述灯板与所述扩散板之间，用于支撑所述扩散板，并隔开所述灯板与所述扩散板以形成混光空间。\n\n[0011]根据本揭示一实施例，所述灯板包括电路板以及阵列排布于所述电路板上的多个微发光二极管，所述支架层设置于所述电路板的边缘。\n\n[0012]根据本揭示一实施例，所述支架层靠近所述灯板的一侧设有凹槽，所述凹槽与所述灯板之间形成容置空间。\n\n[0013]根据本揭示一实施例，所述电路板在位于所述容置空间的部分设有金手指端，所述电路板的线路均连接至所述金手指端，所述背光模组还包括柔性电路板，所述柔性电路板通过设置于所述背板上的开孔延伸至所述容置空间内，并与所述金手指端绑定连接。\n\n[0014]根据本揭示一实施例，所述电路板在位于所述容置空间的部分设有连接器，所述灯板的线路均连接至所述连接器，所述背光模组还包括柔性电路板，所述柔性电路板通过设置于所述背板上的开孔延伸至所述容置空间，并与所述连接器插接。\n\n[0015]根据本揭示一实施例，所述背光模组还包括胶框，所述胶框由所述背板外侧弯折至所述背板内侧，配置成用于支撑显示面板。\n\n[0016]根据本揭示一实施例，所述背光模组还包括层叠设置于所述扩散板上的第一棱镜片和第二棱镜片，所述第二棱镜片与弯折至所述背板内侧的所述框胶之间形成间隙。\n\n[0017]根据本揭示一实施例，所述间隙的厚度范围为0.2mm～0.3mm。\n\n[0018]根据本揭示一实施例，所述支架层的材料包括橡胶。\n\n[0019]本揭示实施例还提供一种车载显示装置，包括如上述的背光模组。\n\n[0020]本揭示实施例的有益效果：本揭示实施例通过在背光模组的扩散板与灯板之间设置支架层，所述支架层用于支撑所述扩散板，并隔开所述灯板与所述扩散板以形成混光空间，通过调节支架层的高度，可以方便地调节控制扩散板与灯板之间形成的混光空间的距离，从而优化“满天星”灯影的问题，提高背光模组以及车载显示装置的背光显示效果。\n\n附图说明\n\n[0021]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是揭示的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0022]图1为本揭示实施例一提供的背光模组的截面结构示意图；\n\n[0023]图2为本揭示实施例一提供的背光模组的平面结构示意图；\n\n[0024]图3为本揭示实施例二提供的背光模组的截面结构示意图；\n\n[0025]图4为本揭示实施例二提供的背光模组的平面结构示意图。\n\n具体实施方式\n\n[0026]以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。\n\n[0027]下面结合附图和具体实施例对本揭示做进一步的说明：\n\n[0028]实施例一：\n\n[0029]本揭示实施例提供一种背光模组，下面结合图1至图2进行详细说明。\n\n[0030]如图1所示，图1为本揭示实施例提供的背光模组100的截面结构示意图，所述背光模组100包括背板110、灯板120和支架层130，所述灯板120通过导热胶带贴附于所述背板110上，所述扩散板130设置于所述灯板120远离所述背板110的一侧上，所述支架层140设置于所述灯板120与所述扩散板130之间，用于支撑所述扩散板130，并隔开所述灯板120与所述扩散板130以形成混光空间141，所述灯板120与所述扩散板130相邻的两个表面之间的空隙即为所述混光空间141，所述灯板120作为光源发出的光线在所述混光空间141内直接形成面光源。\n\n[0031]在本实施例中，所述灯板120包括电路板121和微发光二极管122。如图2所示，图2为本揭示实施例提供的背光模组100的平面结构示意图，图2中仅表示出部分微发光二极管122以及部分支架层140，所述微发光二极管122阵列排布于所述电路板121上，所述支架层140设置于所述电路板122的四周边缘，并包围所述阵列排布的多个微发光二极管121。\n\n[0032]在本实施例中，所述支架层140的材料包括橡胶，相较于原本胶框的材质，橡胶材料较为柔软，因此可以通过按压等方式调整以橡胶为原材料的支架层140的厚度，直接调整混光空间141沿背光模组100厚度方向的距离，在本实施例所提供的背光模组100的结构中，支架层140的厚度即为混光空间141的距离，通过将混光空间141的距离调整到与所述扩散板130合适的配比，使得微发光二极管122发出的光线较为均匀的抵达显示面板200，从而有效优化“满天星”灯影的问题，提升背光模组100以及显示面板200的显示效果。同时，橡胶的制作成本低于胶框的制作成本，并且橡胶的制作工艺也较胶框的制作工艺简单，因此，用橡胶形成的支架层140代替原本的胶框，可以简化生产工艺，减少生产成本。\n\n[0033]在本实施例中，如图1所示，所述支架层140靠近所述灯板121的一侧设有凹槽，所述凹槽与所述灯板121之间形成容置空间，所述电路板121在位于所述容置空间的部分设有金手指端(图中未示出)，所述电路板121的线路均连接至所述金手指端，所述背光模组100还包括柔性电路板180，所述柔性电路板180通过设置于所述背板110上的开孔延伸至所述容置空间内，并与所述金手指端绑定连接。通过将柔性电路板180与金手指端绑定连接的位置设置于支架层140与电路板120形成的容置空间内，可以省去金手指端原本占据的空间，从而可以减小支架层140在平面结构中的宽度，进而减小背光模组100下边框的宽度，有效提升车载显示装置的屏占比。\n\n[0034]如图2所示，所述支架层140分为相互连接的多个部分，分别对应于电路板121的四个周边，图2中仅展示出相互连接的第一部分141和第二部分142。其中，所述第一部分141和所述第二部分142均设置成长条状，且所述第一部分141在与第二部分142连接的部分设置成L型，所述第二部分142的一端与所述L型的凹槽相互配合搭接，有效提升支架层140的稳定性，以提高可靠性测试的可靠度。当然，所述支架层140其他部分的连接同样可以参考第一部分141和第二部分142的连接方式，在一些实施例中，所述支架层140的多个部分也可以设计成其他的配合连接的方式，当然所述支架层140也可以根据实际需求设计成为一个整体。\n\n[0035]在一些实施例中，根据灯板120的电路板121上电路的复杂程度和分区情况，电路板121上的设置的金手指端数量可以为多个，对于电路板121上分区较少时，所有的金手指端可以都设置于电路板121的一侧边缘，对于电路复杂程度较高，分区较多的电路板，可以将金手指端设置于电路板121相对的上下或左右两侧的边缘，此时，对应两侧的支架层140均需要形成相应的凹槽对金手指端和柔性电路板进行避空设计。\n\n[0036]在本实施例中，如图1所示，所述背光模组100还包括胶框160，所述胶框160由所述背板110的外侧弯折至所述背板110的内侧，配置成用于支撑显示面板200，所述胶框160与所述显示面板200之间设置有泡棉胶170，用于保护所述显示面板200。所述显示面板200包括依次层叠设置的第一偏光片210、阵列基板220、彩膜基板230和第二偏光片240。\n\n[0037]在本实施例中，所述背光模组100还包括层叠设置于所述扩散板130上的第一棱镜片150和第二棱镜片151，所述第一棱镜片150与所述第二棱镜片151的尺寸相同，所述第二棱镜片152与弯折至所述背板110内侧的所述框胶160之间形成间隙161，所述间隙161用于在可靠性测试中，给上述棱镜片预留一定的膨胀扩展空间，防止由于棱镜片翘曲等导致的显示不良。\n\n[0038]优选的，所述间隙161的厚度范围为0.2mm～0.3mm。\n\n[0039]本揭示实施例通过在背光模组100的扩散板130与灯板120之间设置支架层140，所述支架层140用于支撑所述扩散板130，并隔开所述灯板120与所述扩散板130以形成混光空间141，通过调节支架层140的高度，可以方便地调节控制扩散板130与灯板120之间形成的混光空间141的距离，从而优化“满天星”灯影的问题，提高背光模组100背光显示效果。\n\n[0040]实施例二：\n\n[0041]本揭示实施例提供一种背光模组，下面结合图3至图4进行详细说明。\n\n[0042]如图3所示，图3为本揭示实施例提供的背光模组300的截面结构示意图，所述背光模组300包括背板310、灯板320和支架层330，所述灯板320通过导热胶带贴附于所述背板310上，所述扩散板330设置于所述灯板320远离所述背板310的一侧上，所述支架层340设置于所述灯板320与所述扩散板330之间，用于支撑所述扩散板330，并隔开所述灯板320与所述扩散板330以形成混光空间341，所述灯板320与所述扩散板330相邻的两个表面之间的空隙即为所述混光空间341，所述灯板320作为光源发出的光线在所述混光空间341内直接形成面光源。\n\n[0043]在本实施例中，所述灯板320包括电路板321和微发光二极管322。如图4所示，图4为本揭示实施例提供的背光模组200的平面结构示意图，图4中仅表示出部分微发光二极管322以及部分支架层340，所述微发光二极管322阵列排布于所述电路板321上，所述支架层340设置于所述电路板322的四周边缘，并包围所述阵列排布的多个微发光二极管321。\n\n[0044]在本实施例中，所述支架层340的材料包括橡胶，相较于原本胶框的材质，橡胶材料较为柔软，因此可以通过按压等方式调整以橡胶为原材料的支架层340的厚度，直接调整混光空间341沿背光模组300厚度方向的距离，在本实施例所提供的背光模组300的结构中，支架层340的厚度即为混光空间341的距离，通过将混光空间341的距离调整到与所述扩散板330合适的配比，使得微发光二极管322发出的光线较为均匀的抵达显示面板300，从而有效优化“满天星”灯影的问题，提升背光模组300以及显示面板400的显示效果。同时，橡胶的制作成本低于胶框的制作成本，并且橡胶的制作工艺也较胶框的制作工艺简单，因此，用橡胶形成的支架层340代替原本的胶框，可以简化生产工艺，减少生产成本。\n\n[0045]在本实施例中，如图3所示，所述支架层340靠近所述灯板321的一侧设有凹槽，所述凹槽与所述灯板321之间形成容置空间，所述电路板321在位于所述容置空间的部分设有连接器323，所述灯板321的线路均连接至所述连接器323，所述背光模组300还包括柔性电路板380，所述柔性电路板380通过设置于所述背板310上的开孔延伸至所述容置空间，并与所述连接器323插接。通过将连接器323容置空间内，可以省去连接器323原本占据的空间，从而可以减小支架层340在平面结构中的宽度，进而减小背光模组300下边框的宽度，有效提升车载显示装置的屏占比。\n\n[0046]在一些实施例中，根据灯板320的电路板321上电路的复杂程度和分区情况，电路板321上的设置的连接器323数量可以为多个，对于电路板321上分区较少时，所有的连接器323可以都设置于电路板321的一侧边缘，对于电路复杂程度较高，分区较多的电路板，可以将连接器323设置于电路板321相对的上下或左右两侧的边缘，此时，对应两侧的支架层340均需要形成相应的凹槽对连接器323和柔性电路板进行避空设计。\n\n[0047]优选的，所述连接器323的厚度应小于混光空间341和微发光二极管322的厚度之和，同时，连接器323的边缘与容置空间的边缘间隔应大于或等于0.5mm，以便于连接器323以及支架层340的装配。\n\n[0048]如图4所示，所述支架层340分为相互连接的多个部分，分别对应于电路板321的四个周边，图4中仅展示出相互连接的第一部分341和第二部分342。其中，所述第一部分341在与第二部分342连接的部分设置成L型，所述第二部分342的一端与所述L型的凹槽相互配合搭接，有效提升支架层340的稳定性，以提高可靠性测试的可靠度。当然，所述支架层340其他部分的连接同样可以参考第一部分341和第二部分342的连接方式，在一些实施例中，所述支架层340的多个部分也可以设计成其他的配合连接的方式，当然所述支架层340也可以根据实际需求设计成为一个整体。\n\n[0049]在本实施例中，如图3所示，所述背光模组300还包括胶框360，所述胶框360由所述背板310的外侧弯折至所述背板310的内侧，配置成用于支撑显示面板400，所述胶框360与所述显示面板400之间设置有泡棉胶370，用于保护所述显示面板400。所述显示面板400包括依次层叠设置的第一偏光片410、阵列基板420、彩膜基板430和第二偏光片440。\n\n[0050]在本实施例中，所述背光模组300还包括层叠设置于所述扩散板330上的第一棱镜片350和第二棱镜片351，所述第一棱镜片350与所述第二棱镜片351的尺寸相同，所述第二棱镜片352与弯折至所述背板310内侧的所述框胶360之间形成间隙361，所述间隙361用于在可靠性测试中，给上述棱镜片预留一定的膨胀扩展空间，防止由于棱镜片翘曲等导致的显示不良。\n\n[0051]优选的，所述间隙361的厚度范围为0.2mm～0.3mm。\n\n[0052]本揭示实施例通过在背光模组300的扩散板330与灯板320之间设置支架层340，所述支架层340用于支撑所述扩散板330，并隔开所述灯板320与所述扩散板330以形成混光空间341，通过调节支架层340的高度，可以方便地调节控制扩散板330与灯板320之间形成的混光空间341的距离，从而优化“满天星”灯影的问题，提高背光模组300背光显示效果。\n\n[0053]本揭示实施例还提供了一种车载显示装置，包括如上述实施例所提供的背光模组，且能够实现与上述实施例所提供的背光模组相同的技术效果，此处不再赘述。\n\n[0054]综上所述，虽然本揭示以优选实施例揭露如上，但上述优选实施例并非用以限制本揭示，本领域的普通技术人员，在不脱离本揭示的精神和范围内，均可作各种更动与润饰，因此本揭示的保护范围以权利要求界定的范围为基准。');
INSERT INTO `os_patent_instruction_text` VALUES (10701, 23755, '技术领域\n\n[0001]本发明属于背光技术领域，尤其涉及一种背光模组。\n\n背景技术\n\n[0002]次毫米发光二极管(mini Light Emitting Diode，miniLED)目前成为市场开发的热点，其具有轻薄、省电、柔性可弯曲、亮度高、可制作窄边框全面屏显示器件及高动态对比度显示器件等诸多优势，成为市场关注的重点。\n\n[0003]然而，由于芯片发光角度的限制以及芯片数量的限制，面光源存在整面亮度不均的问题。通过增加高雾度扩散片可实现均匀混光，但是由于扩散片透过率较低，因此易造成面光源正面亮度的降低，不利于节能省电优势的体现。若通过增大芯片的发光角度来改善混匀效果，则芯片发光角度增大也会造成芯片发光效率的降低，面光源的整体光能利用率也会变差。另外，若采用表面微结构的工艺实现均匀混光的方式，不但增加了样品的制作工艺，也增加了生产成本，工艺的稳定性方面也不成熟，因此也并非理想的混光方案。\n\n[0004]有鉴于此，需要对现有技术中的问题提出解决方法。\n\n发明内容\n\n[0005]本发明的目的在于，提供一种背光模组，通过在miniLED结构中采用半透膜片层的方式来减弱芯片正视角方向的发光亮度，同时增加芯片之间的发光光强，从而改善miniLED结构的整面混光均匀性，以制备超薄液晶显示面板的背光模组。\n\n[0006]本发明实施例提供一种背光模组，其包括一基板；一芯片层，设于所述基板上；一封胶层，覆盖于所述基板和所述芯片层上；以及一半透膜片层，设于所述封胶层上，所述半透膜片层允许对蓝光半透过，并允许对红绿光全透过。\n\n[0007]进一步地，所述背光模组还包括：一扩散膜片层，设于所述半透膜片层上；以及一增光膜片层，设于所述扩散片层上。\n\n[0008]进一步地，所述增光膜片层为棱镜膜层。\n\n[0009]进一步地，所述基板包括柔性基板及印刷电路板的任一种。\n\n[0010]进一步地，所述芯片层包括多个芯片。\n\n[0011]进一步地，所述封胶层为荧光胶层。\n\n[0012]进一步地，所述封胶层为透明胶层。\n\n[0013]进一步地，当所述封胶层为透明胶层时，在所述半透膜片层上设有一量子点膜片层。\n\n[0014]进一步地，所述半透膜片层的蓝光透过率为30％至70％。\n\n[0015]进一步地，所述半透膜片层的红绿光透过率大于85％。\n\n[0016]本发明实施例通过在miniLED结构中采用半透膜片层的方式来减弱芯片正视角方向的发光亮度，同时增加芯片之间的发光光强，从而改善miniLED结构的整面混光均匀性，以制备超薄液晶显示面板的背光模组。\n\n附图说明\n\n[0017]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其有益效果显而易见。\n\n[0018]图1是本发明实施例提供的一种背光模组的结构示意图。\n\n[0019]图2是本发明实施例提供的另一种背光模组的结构示意图。\n\n[0020]图3a是本发明实施例提供的无半透膜片层的背光模组的混光原理示意图。\n\n[0021]图3b是本发明实施例提供的有半透膜片层的背光模组的混光原理示意图。\n\n具体实施方式\n\n[0022]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0023]本发明的说明书和权利要求书以及上述附图中的术语“第一”、“第二”、“第三”等(如果存在)是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。应当理解，这样描述的对象在适当情况下可以互换。此外，术语“包括”和“具有”以及他们的任何变形，意图在于覆盖不排他的包含。\n\n[0024]在具体实施方式中，下文论述的附图以及用来描述本发明公开的原理的各实施例仅用于说明，而不应解释为限制本发明公开的范围。所属领域的技术人员将理解，本发明的原理可在任何适当布置的系统中实施。将详细说明示例性实施方式，在附图中示出了这些实施方式的实例。此外，将参考附图详细描述根据示例性实施例的终端。附图中的相同附图标号指代相同的元件。\n\n[0025]本具体实施方式中使用的术语仅用来描述特定实施方式，而并不意图显示本发明的概念。除非上下文中有明确不同的意义，否则，以单数形式使用的表达涵盖复数形式的表达。在本发明说明书中，应理解，诸如“包括”、“具有”以及“含有”等术语意图说明存在本发明说明书中揭示的特征、数字、步骤、动作或其组合的可能性，而并不意图排除可存在或可添加一个或多个其他特征、数字、步骤、动作或其组合的可能性。附图中的相同参考标号指代相同部分。\n\n[0026]如图1所示，本发明实施例提供一种背光模组，包括基板11、芯片层12、封胶层13、半透膜片层14、扩散膜片层15以及增光膜片层16。\n\n[0027]基板11可以为柔性基板(flexible printed circuit board，简称FPC)，也可以为印刷电路板(printed circuit board，简称PCB)。其中PCB可选取BT树脂作为基材。\n\n[0028]芯片层12设于基板11上。芯片层12包括多个芯片，芯片可以为100微米-500微米大小的miniLED芯片。芯片采用板上芯片封装(chip on board，简称COB)的方式进行表面固晶处理。\n\n[0029]其中，固晶又称为Die Bond或装片。固晶即通过固晶胶把晶片粘结在支架的指定区域，形成热通路或电通路，为后序的打线连接提供条件的工序。所述固晶胶包括导电胶和绝缘胶。具体地，导电胶可以为银胶，绝缘胶可以为透明胶。胶膜厚度为0.1-0.15毫米，主要起到固定芯片的作用。\n\n[0030]封胶层13设于芯片层12上。封胶层13为荧光胶层。荧光胶层的厚度为0.15-0.4毫米，其组份包括荧光粉和光学透明胶(optically clear adhesive，简称OCA)，光学透明胶和荧光粉混合即形成荧光胶。荧光胶层为整面覆膜方式成型，介质整面均匀性较好，因此保证芯片出光后在荧光胶层中均匀传导，不受阻断，胶层表面不同位置各角度的出光较为均匀。\n\n[0031]半透膜片层14设于封胶层13。半透膜片层14包括一蓝光半透膜片，该膜片对500nm-780nm的红绿光波段透过率大于85％，具体可以为90％-98％，对380nm-500nm蓝光波段光透过率为30％-70％，因此可实现允许蓝光半透过及红绿光全透过的特性，于是能够减弱芯片正视角方向的发光强度，进一步改善miniLED整面的混光均匀性，以制备超薄液晶显示面板的背光模组。\n\n[0032]扩散膜片层15设于半透膜片层14上。扩散膜片层15包括一扩散片，起到匀光和正视角方向聚光的作用。光线透过以聚对苯二甲酸乙二醇酯(polyethylene terephthalate，简称PET)作为基材的扩散片，会与折射率相异的介质中穿过，使得光发生许多折射、反射与散射的现象，可修正光线成均匀面光源以达到光学扩散的效果。\n\n[0033]在背光源结构中主要起到修正扩散角度的作用，会使光辐射面积增大，但是降低了单位面积的光强度，即减低辉度。发光光源经扩散材料扩散之后，能变成面积更大，均匀度较好，色度稳定的2次光源。具有扩散光线的作用，即光线在其表面会发生散射，将光线柔和均匀的散播出来。另外，多数扩散膜的基本结构是在透明基材(例如PET)上两面涂布光学散光颗粒。\n\n[0034]增光膜片层16设于扩散膜片层15。增光膜片层16包括一棱镜膜(brightnessenhancement film，简称BEF)，起到匀光和正视角方向聚光的作用。棱镜膜是利用微复制技术，将丙烯酸树脂制成的棱镜结构制作在聚对苯二甲酸乙二醇酯(polyethyleneterephthalate，简称PET)基材上制造而成的光学薄膜，其表面是高度为20～50微米左右的微棱镜结构。按照几何光学原理，背光源出射的光线经过棱镜膜及背光源系统的循环作用，最终汇聚在正视方向出射，从而达到增亮效果。\n\n[0035]当该膜片在背光源中使用时，从光源射入的光在通过棱镜结构时，只有入射光在某一角度范围之内的光才可以通过折射作用出射，其余的光因不满足折射条件而被棱镜边沿反射回光源，再由光源底部的反射片作用而重新出射。这样，背光源中的光线在棱镜结构的作用下，不断的循环利用，原本向各个方向发散的光线在通过棱镜膜后，被控制在70°的角度范围内，从而达到正视角方向亮度增强的效果。根据测试，BEF系列增亮膜的单张有效穿透率增幅约60％左右。\n\n[0036]如图2所示，本发明实施例提供一种背光模组，包括基板21、芯片层22、封胶层23、半透膜片层24、量子点膜片层25、扩散膜片层26以及增光膜片层27。\n\n[0037]基板21可以为柔性基板(flexible printed circuit board，简称FPC)，也可以为印刷电路板(printed circuit board，简称PCB)。其中PCB可选取BT树脂作为基材。\n\n[0038]芯片层22设于基板21上。芯片层22包括多个芯片。芯片为100微米-500微米大小的miniLED芯片，芯片采用板上芯片封装(chip on board，简称COB)的方式进行表面固晶处理。\n\n[0039]其中，固晶又称为Die Bond或装片。固晶即通过固晶胶把晶片粘结在支架的指定区域，形成热通路或电通路，为后序的打线连接提供条件的工序。所述固晶胶包括导电胶和绝缘胶。具体地，导电胶可以为银胶，绝缘胶可以为透明胶。胶膜厚度为0.1-0.15毫米，主要起到固定芯片的作用。\n\n[0040]封胶层23设于芯片层22上，封胶层23为荧光胶层。荧光胶层的厚度为0.15-0.4毫米，其组份包括荧光粉和光学透明胶(optically clear adhesive，简称OCA)，光学透明胶和荧光粉混合即形成荧光胶。荧光胶层为整面覆膜方式成型，介质整面均匀性较好，因此保证芯片出光后在荧光胶层中均匀传导，不受阻断，胶层表面不同位置各角度的出光较为均匀。\n\n[0041]半透膜片层24设于封胶层23上，半透膜片层24包括一蓝光半透膜片，该膜片对500nm-780nm的红绿光波段透过率大于85％，具体可以为90％-98％，对380nm-500nm蓝光波段光透过率为30％-70％，因此可实现允许蓝光半透过及红绿光全透过的特性，于是能够减弱芯片正视角方向的发光强度，进一步改善miniLED整面的混光均匀性，以制备超薄液晶显示面板的背光模组。\n\n[0042]量子点膜片层25设于半透膜片层24上，起到色转换作用。量子点膜片层25可以将部分蓝光转换为红绿光形成白光混光。所谓量子点(quantum dot，简称QD)技术，是把电子束缚在一定范围内的半导体纳米材料结构技术，其由尺寸大小在1～100nm的超小化合物结晶体构成。在量子点技术中，可利用不同尺寸大小的结晶体控制光的波长，进而精确控制光的颜色。因此，量子点材料被应用于背光模块中，采用高频谱光源(例如蓝光LED)取代传统白光LED光源，量子点材料在高频光源的照射下，可被激发产生不同波长的光，通过调整量子点材料的尺寸大小，即可调节合成光的颜色，实现高色域(诸如100％NTSC)的液晶显示器的背光要求。\n\n[0043]扩散膜片层26设于量子点膜片层25上。扩散膜片层26包括一扩散片，起到匀光和正视角方向聚光的作用。光线透过以聚对苯二甲酸乙二醇酯(polyethyleneterephthalate，简称PET)作为基材的扩散片，会与折射率相异的介质中穿过，使得光发生许多折射、反射与散射的现象，可修正光线成均匀面光源以达到光学扩散的效果。\n\n[0044]在背光源结构中主要起到修正扩散角度的作用，会使光辐射面积增大，但是降低了单位面积的光强度，即减低辉度。发光光源经扩散材料扩散之后，能变成面积更大，均匀度较好，色度稳定的2次光源。具有扩散光线的作用，即光线在其表面会发生散射，将光线柔和均匀的散播出来。另外，多数扩散膜的基本结构是在透明基材(例如PET)上两面涂布光学散光颗粒。\n\n[0045]增光膜片层27设于扩散膜片层26上。增光膜片层27包括一棱镜膜(brightnessenhancement film，简称BEF)，起到匀光和正视角方向聚光的作用。棱镜膜是利用微复制技术,将丙烯酸树脂制成的棱镜结构制作在聚对苯二甲酸乙二醇酯(polyethyleneterephthalate，PET)基材上制造而成的光学薄膜，其表面是高度为20～50微米左右的微棱镜结构。按照几何光学原理，背光源出射的光线经过棱镜膜及背光源系统的循环作用，最终汇聚在正视方向出射，从而达到增亮效果。\n\n[0046]当该膜片在背光源中使用时，从光源射入的光在通过棱镜结构时，只有入射光在某一角度范围之内的光才可以通过折射作用出射，其余的光因不满足折射条件而被棱镜边沿反射回光源，再由光源底部的反射片作用而重新出射。这样，背光源中的光线在棱镜结构的作用下，不断的循环利用，原本向各个方向发散的光线在通过棱镜膜后，被控制在70°的角度范围内，从而达到正视角方向亮度增强的效果。根据测试，BEF系列增亮膜的单张有效穿透率增幅约60％左右。\n\n[0047]如图3a所示，为无半透膜膜片层24的背光模组。芯片以一定角度向上出光，图中区域1和区域2出光亮度较高，区域3出光亮度较低，正视方向看区域3易产生亮暗不均现象，俗称灰度mura，其主要原因为芯片间光强较弱，所示架构混光均匀需要较大的混光距离(optical distance，简称OD)，如图3a所示。\n\n[0048]如图3b所示，为有半透膜膜片层24的背光模组。存在半透膜片层时，芯片以一定角度向上出光，在区域1和区域2的位置部分光线透过而部分光线会被反射，反射光通过基板上高反射率材质后会以一定透过率在区域3的位置出光，使光在蓝光半透膜片的不同点位上实现均匀出光(区域1、2、3出光均匀性得到改善)，消除图3a中所示的灰度mura现象，从而达到仅需较小的OD以实现均匀混光的效果，进而使得miniLED背光模组薄型化。根据基板材质的反射率调节半透膜片在蓝光波段的透过率，可实现miniLED灯板整面的均匀混光。\n\n[0049]本发明实施例通过在miniLED结构中采用半透膜片层的方式来减弱芯片正视角方向的发光亮度，同时增加芯片之间的发光光强，从而改善miniLED结构的整面混光均匀性，以制备超薄液晶显示面板的背光模组。\n\n[0050]以上对本发明实施例所提供的一种背光模组进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。', '技术领域\n\n[0001]本发明属于背光技术领域，尤其涉及一种背光模组。\n\n背景技术\n\n[0002]次毫米发光二极管(mini Light Emitting Diode，miniLED)目前成为市场开发的热点，其具有轻薄、省电、柔性可弯曲、亮度高、可制作窄边框全面屏显示器件及高动态对比度显示器件等诸多优势，成为市场关注的重点。\n\n[0003]然而，由于芯片发光角度的限制以及芯片数量的限制，面光源存在整面亮度不均的问题。通过增加高雾度扩散片可实现均匀混光，但是由于扩散片透过率较低，因此易造成面光源正面亮度的降低，不利于节能省电优势的体现。若通过增大芯片的发光角度来改善混匀效果，则芯片发光角度增大也会造成芯片发光效率的降低，面光源的整体光能利用率也会变差。另外，若采用表面微结构的工艺实现均匀混光的方式，不但增加了样品的制作工艺，也增加了生产成本，工艺的稳定性方面也不成熟，因此也并非理想的混光方案。\n\n[0004]有鉴于此，需要对现有技术中的问题提出解决方法。\n\n发明内容\n\n[0005]本发明的目的在于，提供一种背光模组，通过在miniLED结构中采用半透膜片层的方式来减弱芯片正视角方向的发光亮度，同时增加芯片之间的发光光强，从而改善miniLED结构的整面混光均匀性，以制备超薄液晶显示面板的背光模组。\n\n[0006]本发明实施例提供一种背光模组，其包括一基板；一芯片层，设于所述基板上；一封胶层，覆盖于所述基板和所述芯片层上；以及一半透膜片层，设于所述封胶层上，所述半透膜片层允许对蓝光半透过，并允许对红绿光全透过。\n\n[0007]进一步地，所述背光模组还包括：一扩散膜片层，设于所述半透膜片层上；以及一增光膜片层，设于所述扩散片层上。\n\n[0008]进一步地，所述增光膜片层为棱镜膜层。\n\n[0009]进一步地，所述基板包括柔性基板及印刷电路板的任一种。\n\n[0010]进一步地，所述芯片层包括多个芯片。\n\n[0011]进一步地，所述封胶层为荧光胶层。\n\n[0012]进一步地，所述封胶层为透明胶层。\n\n[0013]进一步地，当所述封胶层为透明胶层时，在所述半透膜片层上设有一量子点膜片层。\n\n[0014]进一步地，所述半透膜片层的蓝光透过率为30％至70％。\n\n[0015]进一步地，所述半透膜片层的红绿光透过率大于85％。\n\n[0016]本发明实施例通过在miniLED结构中采用半透膜片层的方式来减弱芯片正视角方向的发光亮度，同时增加芯片之间的发光光强，从而改善miniLED结构的整面混光均匀性，以制备超薄液晶显示面板的背光模组。\n\n附图说明\n\n[0017]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其有益效果显而易见。\n\n[0018]图1是本发明实施例提供的一种背光模组的结构示意图。\n\n[0019]图2是本发明实施例提供的另一种背光模组的结构示意图。\n\n[0020]图3a是本发明实施例提供的无半透膜片层的背光模组的混光原理示意图。\n\n[0021]图3b是本发明实施例提供的有半透膜片层的背光模组的混光原理示意图。\n\n具体实施方式\n\n[0022]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0023]本发明的说明书和权利要求书以及上述附图中的术语“第一”、“第二”、“第三”等(如果存在)是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。应当理解，这样描述的对象在适当情况下可以互换。此外，术语“包括”和“具有”以及他们的任何变形，意图在于覆盖不排他的包含。\n\n[0024]在具体实施方式中，下文论述的附图以及用来描述本发明公开的原理的各实施例仅用于说明，而不应解释为限制本发明公开的范围。所属领域的技术人员将理解，本发明的原理可在任何适当布置的系统中实施。将详细说明示例性实施方式，在附图中示出了这些实施方式的实例。此外，将参考附图详细描述根据示例性实施例的终端。附图中的相同附图标号指代相同的元件。\n\n[0025]本具体实施方式中使用的术语仅用来描述特定实施方式，而并不意图显示本发明的概念。除非上下文中有明确不同的意义，否则，以单数形式使用的表达涵盖复数形式的表达。在本发明说明书中，应理解，诸如“包括”、“具有”以及“含有”等术语意图说明存在本发明说明书中揭示的特征、数字、步骤、动作或其组合的可能性，而并不意图排除可存在或可添加一个或多个其他特征、数字、步骤、动作或其组合的可能性。附图中的相同参考标号指代相同部分。\n\n[0026]如图1所示，本发明实施例提供一种背光模组，包括基板11、芯片层12、封胶层13、半透膜片层14、扩散膜片层15以及增光膜片层16。\n\n[0027]基板11可以为柔性基板(flexible printed circuit board，简称FPC)，也可以为印刷电路板(printed circuit board，简称PCB)。其中PCB可选取BT树脂作为基材。\n\n[0028]芯片层12设于基板11上。芯片层12包括多个芯片，芯片可以为100微米-500微米大小的miniLED芯片。芯片采用板上芯片封装(chip on board，简称COB)的方式进行表面固晶处理。\n\n[0029]其中，固晶又称为Die Bond或装片。固晶即通过固晶胶把晶片粘结在支架的指定区域，形成热通路或电通路，为后序的打线连接提供条件的工序。所述固晶胶包括导电胶和绝缘胶。具体地，导电胶可以为银胶，绝缘胶可以为透明胶。胶膜厚度为0.1-0.15毫米，主要起到固定芯片的作用。\n\n[0030]封胶层13设于芯片层12上。封胶层13为荧光胶层。荧光胶层的厚度为0.15-0.4毫米，其组份包括荧光粉和光学透明胶(optically clear adhesive，简称OCA)，光学透明胶和荧光粉混合即形成荧光胶。荧光胶层为整面覆膜方式成型，介质整面均匀性较好，因此保证芯片出光后在荧光胶层中均匀传导，不受阻断，胶层表面不同位置各角度的出光较为均匀。\n\n[0031]半透膜片层14设于封胶层13。半透膜片层14包括一蓝光半透膜片，该膜片对500nm-780nm的红绿光波段透过率大于85％，具体可以为90％-98％，对380nm-500nm蓝光波段光透过率为30％-70％，因此可实现允许蓝光半透过及红绿光全透过的特性，于是能够减弱芯片正视角方向的发光强度，进一步改善miniLED整面的混光均匀性，以制备超薄液晶显示面板的背光模组。\n\n[0032]扩散膜片层15设于半透膜片层14上。扩散膜片层15包括一扩散片，起到匀光和正视角方向聚光的作用。光线透过以聚对苯二甲酸乙二醇酯(polyethylene terephthalate，简称PET)作为基材的扩散片，会与折射率相异的介质中穿过，使得光发生许多折射、反射与散射的现象，可修正光线成均匀面光源以达到光学扩散的效果。\n\n[0033]在背光源结构中主要起到修正扩散角度的作用，会使光辐射面积增大，但是降低了单位面积的光强度，即减低辉度。发光光源经扩散材料扩散之后，能变成面积更大，均匀度较好，色度稳定的2次光源。具有扩散光线的作用，即光线在其表面会发生散射，将光线柔和均匀的散播出来。另外，多数扩散膜的基本结构是在透明基材(例如PET)上两面涂布光学散光颗粒。\n\n[0034]增光膜片层16设于扩散膜片层15。增光膜片层16包括一棱镜膜(brightnessenhancement film，简称BEF)，起到匀光和正视角方向聚光的作用。棱镜膜是利用微复制技术，将丙烯酸树脂制成的棱镜结构制作在聚对苯二甲酸乙二醇酯(polyethyleneterephthalate，简称PET)基材上制造而成的光学薄膜，其表面是高度为20～50微米左右的微棱镜结构。按照几何光学原理，背光源出射的光线经过棱镜膜及背光源系统的循环作用，最终汇聚在正视方向出射，从而达到增亮效果。\n\n[0035]当该膜片在背光源中使用时，从光源射入的光在通过棱镜结构时，只有入射光在某一角度范围之内的光才可以通过折射作用出射，其余的光因不满足折射条件而被棱镜边沿反射回光源，再由光源底部的反射片作用而重新出射。这样，背光源中的光线在棱镜结构的作用下，不断的循环利用，原本向各个方向发散的光线在通过棱镜膜后，被控制在70°的角度范围内，从而达到正视角方向亮度增强的效果。根据测试，BEF系列增亮膜的单张有效穿透率增幅约60％左右。\n\n[0036]如图2所示，本发明实施例提供一种背光模组，包括基板21、芯片层22、封胶层23、半透膜片层24、量子点膜片层25、扩散膜片层26以及增光膜片层27。\n\n[0037]基板21可以为柔性基板(flexible printed circuit board，简称FPC)，也可以为印刷电路板(printed circuit board，简称PCB)。其中PCB可选取BT树脂作为基材。\n\n[0038]芯片层22设于基板21上。芯片层22包括多个芯片。芯片为100微米-500微米大小的miniLED芯片，芯片采用板上芯片封装(chip on board，简称COB)的方式进行表面固晶处理。\n\n[0039]其中，固晶又称为Die Bond或装片。固晶即通过固晶胶把晶片粘结在支架的指定区域，形成热通路或电通路，为后序的打线连接提供条件的工序。所述固晶胶包括导电胶和绝缘胶。具体地，导电胶可以为银胶，绝缘胶可以为透明胶。胶膜厚度为0.1-0.15毫米，主要起到固定芯片的作用。\n\n[0040]封胶层23设于芯片层22上，封胶层23为荧光胶层。荧光胶层的厚度为0.15-0.4毫米，其组份包括荧光粉和光学透明胶(optically clear adhesive，简称OCA)，光学透明胶和荧光粉混合即形成荧光胶。荧光胶层为整面覆膜方式成型，介质整面均匀性较好，因此保证芯片出光后在荧光胶层中均匀传导，不受阻断，胶层表面不同位置各角度的出光较为均匀。\n\n[0041]半透膜片层24设于封胶层23上，半透膜片层24包括一蓝光半透膜片，该膜片对500nm-780nm的红绿光波段透过率大于85％，具体可以为90％-98％，对380nm-500nm蓝光波段光透过率为30％-70％，因此可实现允许蓝光半透过及红绿光全透过的特性，于是能够减弱芯片正视角方向的发光强度，进一步改善miniLED整面的混光均匀性，以制备超薄液晶显示面板的背光模组。\n\n[0042]量子点膜片层25设于半透膜片层24上，起到色转换作用。量子点膜片层25可以将部分蓝光转换为红绿光形成白光混光。所谓量子点(quantum dot，简称QD)技术，是把电子束缚在一定范围内的半导体纳米材料结构技术，其由尺寸大小在1～100nm的超小化合物结晶体构成。在量子点技术中，可利用不同尺寸大小的结晶体控制光的波长，进而精确控制光的颜色。因此，量子点材料被应用于背光模块中，采用高频谱光源(例如蓝光LED)取代传统白光LED光源，量子点材料在高频光源的照射下，可被激发产生不同波长的光，通过调整量子点材料的尺寸大小，即可调节合成光的颜色，实现高色域(诸如100％NTSC)的液晶显示器的背光要求。\n\n[0043]扩散膜片层26设于量子点膜片层25上。扩散膜片层26包括一扩散片，起到匀光和正视角方向聚光的作用。光线透过以聚对苯二甲酸乙二醇酯(polyethyleneterephthalate，简称PET)作为基材的扩散片，会与折射率相异的介质中穿过，使得光发生许多折射、反射与散射的现象，可修正光线成均匀面光源以达到光学扩散的效果。\n\n[0044]在背光源结构中主要起到修正扩散角度的作用，会使光辐射面积增大，但是降低了单位面积的光强度，即减低辉度。发光光源经扩散材料扩散之后，能变成面积更大，均匀度较好，色度稳定的2次光源。具有扩散光线的作用，即光线在其表面会发生散射，将光线柔和均匀的散播出来。另外，多数扩散膜的基本结构是在透明基材(例如PET)上两面涂布光学散光颗粒。\n\n[0045]增光膜片层27设于扩散膜片层26上。增光膜片层27包括一棱镜膜(brightnessenhancement film，简称BEF)，起到匀光和正视角方向聚光的作用。棱镜膜是利用微复制技术,将丙烯酸树脂制成的棱镜结构制作在聚对苯二甲酸乙二醇酯(polyethyleneterephthalate，PET)基材上制造而成的光学薄膜，其表面是高度为20～50微米左右的微棱镜结构。按照几何光学原理，背光源出射的光线经过棱镜膜及背光源系统的循环作用，最终汇聚在正视方向出射，从而达到增亮效果。\n\n[0046]当该膜片在背光源中使用时，从光源射入的光在通过棱镜结构时，只有入射光在某一角度范围之内的光才可以通过折射作用出射，其余的光因不满足折射条件而被棱镜边沿反射回光源，再由光源底部的反射片作用而重新出射。这样，背光源中的光线在棱镜结构的作用下，不断的循环利用，原本向各个方向发散的光线在通过棱镜膜后，被控制在70°的角度范围内，从而达到正视角方向亮度增强的效果。根据测试，BEF系列增亮膜的单张有效穿透率增幅约60％左右。\n\n[0047]如图3a所示，为无半透膜膜片层24的背光模组。芯片以一定角度向上出光，图中区域1和区域2出光亮度较高，区域3出光亮度较低，正视方向看区域3易产生亮暗不均现象，俗称灰度mura，其主要原因为芯片间光强较弱，所示架构混光均匀需要较大的混光距离(optical distance，简称OD)，如图3a所示。\n\n[0048]如图3b所示，为有半透膜膜片层24的背光模组。存在半透膜片层时，芯片以一定角度向上出光，在区域1和区域2的位置部分光线透过而部分光线会被反射，反射光通过基板上高反射率材质后会以一定透过率在区域3的位置出光，使光在蓝光半透膜片的不同点位上实现均匀出光(区域1、2、3出光均匀性得到改善)，消除图3a中所示的灰度mura现象，从而达到仅需较小的OD以实现均匀混光的效果，进而使得miniLED背光模组薄型化。根据基板材质的反射率调节半透膜片在蓝光波段的透过率，可实现miniLED灯板整面的均匀混光。\n\n[0049]本发明实施例通过在miniLED结构中采用半透膜片层的方式来减弱芯片正视角方向的发光亮度，同时增加芯片之间的发光光强，从而改善miniLED结构的整面混光均匀性，以制备超薄液晶显示面板的背光模组。\n\n[0050]以上对本发明实施例所提供的一种背光模组进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10702, 23756, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示面板及显示装置。\n\n背景技术\n\n[0002]液晶显示器(LCD)显示技术已经面世多年，相比于新兴的有机发光二极管(OLED)显示技术，LCD在显示对比度上劣势较为明显。为弥补此缺陷，近年来发展起来的次毫米发光二极管(MiniLED)背光技术，其可通过分区背光控制实现动态高对比度显示，具有接近OLED显示技术的对比度，同时可实现高亮度，受到人们的青睐。然而，由于MiniLED灯板技术采用芯片阵列的方式在FPC/PCB板上打件，多数也采用整面封装的方式，基板、芯片、封装胶、膜片等物料成本导致MiniLED具有较高的制作成本，目前市场的接受度不高。\n\n[0003]如图1所示，对厚度要求不高的显示器，可采用双盒厚液晶显示技术，以其中的一层液晶盒为控光液晶盒91，另一层液晶盒为显示液晶盒92。其中，背光模组90发出的光线(图2中箭头表示)依次穿过控光液晶盒91和显示液晶盒92，控光液晶盒91多采用聚合物分散液晶(PNLC液晶)，而PNLC液晶在暗态时仍具有较高的穿透率，不利于暗态时对光的控制，容易漏光。\n\n[0004]因此，如何提升控光液晶盒暗态时的控光特性成为提升双盒液晶显示器对比度的关键。\n\n发明内容\n\n[0005]本发明的目的是提供一种显示面板及显示装置，通过降低控光液晶盒暗态漏光，提升了控光液晶盒透过率，保证了双盒液晶显示器白态亮度，实现了高亮度和高对比度显示。\n\n[0006]为了实现上述目的，本发明采用以下技术方案：\n\n[0007]本发明其中一实施例中提供一种显示面板，其包括从下至上依次层叠设置的背光模组、控光液晶盒、准直膜层和显示液晶盒；具体地讲，所述控光液晶盒设于所述背光模组上；所述准直膜层设于所述控光液晶盒上，能够限制散射态的大角度光线通过；所述显示液晶盒设于所述准直膜层上；其中，所述控光液晶盒包括控光上基板、控光下基板以及在所述控光上基板和所述控光下基板之间的聚合物分散液晶层；所述显示液晶盒包括显示上基板、显示下基板以及在所述显示上基板和所述显示下基板之间的液晶层。\n\n[0008]进一步地，所述显示面板还包括：下偏光片，设于所述显示液晶盒下；以及上偏光片，设于所述显示液晶盒上。\n\n[0009]进一步地，所述显示面板还包括盖板，所述盖板设于所述显示液晶盒上。\n\n[0010]进一步地，所述准直膜层为氮化硅与氧化硅的交替膜层。\n\n[0011]进一步地，所述准直膜层的膜层数为10-50层。\n\n[0012]进一步地，所述准直膜层的厚度为100nm-1000nm。\n\n[0013]进一步地，所述背光模组包括蓝光背光灯板、侧发光背光模组或Mini-LED背光模组中的一种。\n\n[0014]进一步地，所述液晶层的材料包括热致液晶或溶致液晶，所述液晶的材料包括联苯液晶、苯基环己烷液晶或酯类液晶。\n\n[0015]进一步地，所述聚合物分散液晶层的材料包括散射型液晶；所述散射型液晶包括多个液晶分子和网状聚合物。\n\n[0016]本发明其中一实施例中提供一种显示装置，包括上述显示面板。\n\n[0017]本发明提供了一种显示面板及显示装置，采用双盒厚液晶显示技术，其中的一层液晶盒为控光液晶盒，另一层液晶盒为显示液晶盒，通过降低控光液晶盒暗态漏光，提升了控光液晶盒透过率，保证了双盒液晶显示器白态亮度，实现了高亮度和高对比度显示，弥补了LCD显示技术相较于OLED显示技术在对比度方面的差异性，并保证了LCD相较于OLED的成本优势。\n\n附图说明\n\n[0018]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0019]图1是现有的一种显示装置的漏光原理示意图；\n\n[0020]图2是本发明实施例中一种显示装置的结构示意图；\n\n[0021]图3为本发明实施例中控光液晶盒在散射态时的出光示意图；\n\n[0022]图4为本发明实施例中控光液晶盒在透明态时的出光示意图；\n\n[0023]图5是本发明实施例中准直膜层的限制散射态的大角度光线通过的原理图；\n\n[0024]图6是本发明实施例中显示装置与现有显示装置的对比度对比图。\n\n[0025]图中部件标识如下：\n\n[0026]10、背光模组，20、控光液晶盒，21、控光上基板，\n\n[0027]22、聚合物分散液晶层，23、控光下基板，30、准直膜层，\n\n[0028]40、显示液晶盒，41、显示上基板，42、液晶层，\n\n[0029]43、显示下基板，44、下偏光片，45、上偏光片，\n\n[0030]50、盖板，100、显示面板。\n\n具体实施方式\n\n[0031]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0032]需要指出的是，在附图中，为了图示的清晰可能夸大了层和区域的尺寸。而且可以理解，当元件或层被称为在另一元件或层“上”时，它可以直接在其他元件上，或者可以存在中间的层。另外，可以理解，当元件或层被称为在另一元件或层“下”时，它可以直接在其他元件下，或者可以存在一个以上的中间的层或元件。另外，还可以理解，当层或元件被称为在两层或两个元件“之间”时，它可以为两层或两个元件之间惟一的层，或还可以存在一个以上的中间层或元件。通篇相似的参考标记指示相似的元件。\n\n[0033]请参阅图2所示，本发明的其中一实施例中，提供一种显示面板100，其包括从下至上依次层叠设置的背光模组10、控光液晶盒20、准直膜层30和显示液晶盒40；具体地讲，所述控光液晶盒20设于所述背光模组10上；所述准直膜层30设于所述控光液晶盒20上，能够限制散射态的大角度光线通过；所述显示液晶盒40设于所述准直膜层30上；其中，所述控光液晶盒20包括控光上基板21、控光下基板23以及在所述控光上基板21和所述控光下基板23之间的聚合物分散液晶层22；所述显示液晶盒40包括显示上基板41、显示下基板43以及在所述显示上基板41和所述显示下基板43之间的液晶层42。\n\n[0034]请同时参阅图1、图2、图3和图4，图3为所述显示面板100包括所述准直膜层30后，所述控光液晶盒20在散射态时，所述准直膜层30限制了散射态的大角度光线(图中箭头表示)通过，漏光得到明显改善。图4为所述控光液晶盒20在透明态出光示意图，所述控光液晶盒20具有较高穿透率，加之所述准直膜层30不限制小角度出光，所述显示面板100的亮度不会受到较大影响。\n\n[0035]所述控光液晶盒20和所述准直膜层30共同实现控光功能，所述控光液晶盒20显示模式为TN模式，像素电极和共电极分别位于所述控光上基板21和所述控光下基板23上，为增大所述控光液晶盒20透过率，优选所述控光上基板21无彩膜光阻和黑色矩阵光阻，无上下偏光片架构。所述控光下基板23能够控制所述聚合物分散液晶层22的液晶旋转使其在高雾散射态和透明态之间切换，所述控光液晶盒20的驱动电压为±(5V-7V)。\n\n[0036]本实施例中，所述准直膜层30为氮化硅与氧化硅的交替膜层。即所述准直膜层30同时包括氧化硅层31以及氮化硅层32。\n\n[0037]如图5所示，所述准直膜层30由氧化硅层31以及氮化硅层32的多膜层结构组成角度控光膜层，如果为小角度出光，图5中的光线B，反射光线经过两层膜层折射后，在表面形成反射光3和反射光4，如果反射光3和反射光4的相位差为π，则相干相消的原理反射率为0，在根据光线能量守恒原理，光线基本上在膜层中全透过，因此小角度光可以透过。如果为大角度出光，图5中的光线A，则会产生反射光1和反射光2，因为反射光1、反射光2的光程差与反射光3、反射光4不一样，不满足相干相消的原理，反射光在膜层表面被反射，则光线A透过膜层的光就减少。光程差和膜层的厚度和折射率相关，设计合适的膜层厚度就可以满足大角度光多数被反射，小角度光多数实现出射。\n\n[0038]本实施例中，所述准直膜层30的膜层数为10-50层；所述准直膜层30的厚度为100nm-1000nm。所述准直膜层30能够通过垂直于所述准直膜层30所在平面的0°-40°范围的光线，即所述准直膜层30能够通过角度范围在40°以内的光线。\n\n[0039]如图6的实施例，BLU曲线表示现有显示装置的聚合物分散液晶层(PNLC)在透明态情况下的亮度随角度变化的曲线，BLU+PNLC曲线表示本实施例中显示装置的所述控光液晶盒20在散射态时的亮度随角度变化的曲线，如果没有所述准直膜层30，则全视角平均对比度可以认为是两条曲线围成的面积之比，如果可以加了一层所述准直膜层30，将40°以外的光取出，尤其是将30°以外的光取出，BLU+PNLC曲线去除的比例更大，BLU曲线去除的比例小，BLU曲线和BLU+PNLC曲线围成的面积比值会增大，全视角平均对比度就会增大。\n\n[0040]本实施例中，所述液晶层42为现有技术的普通液晶，所述液晶层42的材料包括热致液晶或溶致液晶，所述液晶的材料包括联苯液晶、苯基环己烷液晶或酯类液晶。所述聚合物分散液晶层22的材料包括散射型液晶；所述散射型液晶包括多个液晶分子和网状聚合物，可实现透明态和画面显示态的切换。\n\n[0041]所述液晶层42即普通液晶在施加电压后液晶分子发生旋转，控制光的透过率实现灰阶显示；所述聚合物分散液晶层22中由于增加了某些聚合物，二者折射率不同，通过电压控制液晶和网状聚合物的表面产生折射率差，使得光线透过或者在二者表面发生散射，因此可以实现透明态或者散射态。在透明态下可以透光，散射态下实现光线的散射进而用于显示画面。\n\n[0042]所述聚合物分散液晶层22使用的具体过程为：液晶与网状聚合物具有相同的各向异性的介电常数，两种材料均具有双折射现象，当施加的电压高于阈值电压时，液晶分子发生旋转，其方向沿着垂直方向排列，改变了液晶的介电常数的各向异性的特性，在光矢方向上液晶和网状聚合物折射率相当，因此在液晶和网状聚合物的表面不产生折射率差，光线在此处不发生散射，所述控光液晶盒20呈现透明态。不加电压或电压低于阈值电压时，液晶分子呈水平排列，在光矢方向液晶和网状聚合物折射率差异较大，光线在此处发生散射，所述控光液晶盒20呈现散射态。\n\n[0043]其中所述聚合物分散液晶层22的液晶与所述液晶层42的液晶材料相同；优选所述聚合物分散液晶层22中的聚合物网状物含量较高，散射态时所述控光液晶盒20大角度散射光较多，暗态漏光比较严重，控光作用有限，在散射态时所述控光液晶盒20的穿透率仍有40％以上。\n\n[0044]本实施例所述准直膜层30能够抑制大角度的散射光，通过小角度的光线，控光作用明显提升，有效降低了所述控光液晶盒20暗态漏光，提升了所述控光液晶盒20透过率，保证了双盒液晶显示器白态亮度，实现了高亮度和高对比度显示，弥补了LCD显示技术相较于OLED显示技术在对比度方面的差异性，并保证了LCD相较于OLED的成本优势。\n\n[0045]所述控光液晶盒20的盒厚满足Δnd＝λ/4，其中Δn为液晶的折射率各向异性，d为盒厚，Δnd表示光程差，λ为波长，λ数值为380nm-780nm，λ数值优选为500nm、550nm、600nm。\n\n[0046]继续参阅图2，在本实施例中，所述显示面板100还包括：下偏光片44，设于所述显示液晶盒40下方；以及上偏光片45，设于所述显示液晶盒40上方。具体的，所述显示液晶盒40的显示模式为TN模式、VA模式或IPS/FFS模式，所述显示上基板41包含彩膜光阻和黑色矩阵光阻，所述显示液晶盒40的驱动电压为±(4V-6V)。优选的，所述彩膜光阻的绿光像素和红光像素采用量子点彩色滤光片(QDCF)材料，采用蓝光激发光时实现高色域显示。\n\n[0047]其中所述显示液晶盒40的盒厚满足Δnd＝λ/4，其中Δn为液晶的折射率各向异性，d为盒厚，Δnd表示光程差，λ为波长，λ数值为380nm-780nm，λ数值优选为500nm、550nm、600nm。\n\n[0048]本实施例中，所述显示面板100还包括盖板50，所述盖板50设于所述显示液晶盒40上，用于保护所述显示面板100。\n\n[0049]本实施例中，所述背光模组10包括蓝光背光灯板、侧发光背光模组10或Mini-LED背光模组10中的一种。\n\n[0050]本发明其中一实施例中提供一种显示装置，包括上述显示面板100。\n\n[0051]本发明的显示装置可适用于各种场合，可与各种器件、结构相结合，既可以是显示面板，也可为带有显示功能的其他设备，例如平板电脑、电视机、显示橱窗等。应该理解，为了实现功能，本发明的显示装置带有在本说明书中未示出的其他器件、结构等。\n\n[0052]本发明提供了一种显示面板及显示装置，采用双盒厚液晶显示技术，其中的一层液晶盒为控光液晶盒，另一层液晶盒为显示液晶盒，通过降低控光液晶盒暗态漏光，提升了控光液晶盒透过率，保证了双盒液晶显示器白态亮度，实现了高亮度和高对比度显示，弥补了LCD显示技术相较于OLED显示技术在对比度方面的差异性，并保证了LCD相较于OLED的成本优势。\n\n[0053]以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示面板及显示装置。\n\n背景技术\n\n[0002]液晶显示器(LCD)显示技术已经面世多年，相比于新兴的有机发光二极管(OLED)显示技术，LCD在显示对比度上劣势较为明显。为弥补此缺陷，近年来发展起来的次毫米发光二极管(MiniLED)背光技术，其可通过分区背光控制实现动态高对比度显示，具有接近OLED显示技术的对比度，同时可实现高亮度，受到人们的青睐。然而，由于MiniLED灯板技术采用芯片阵列的方式在FPC/PCB板上打件，多数也采用整面封装的方式，基板、芯片、封装胶、膜片等物料成本导致MiniLED具有较高的制作成本，目前市场的接受度不高。\n\n[0003]如图1所示，对厚度要求不高的显示器，可采用双盒厚液晶显示技术，以其中的一层液晶盒为控光液晶盒91，另一层液晶盒为显示液晶盒92。其中，背光模组90发出的光线(图2中箭头表示)依次穿过控光液晶盒91和显示液晶盒92，控光液晶盒91多采用聚合物分散液晶(PNLC液晶)，而PNLC液晶在暗态时仍具有较高的穿透率，不利于暗态时对光的控制，容易漏光。\n\n[0004]因此，如何提升控光液晶盒暗态时的控光特性成为提升双盒液晶显示器对比度的关键。\n\n发明内容\n\n[0005]本发明的目的是提供一种显示面板及显示装置，通过降低控光液晶盒暗态漏光，提升了控光液晶盒透过率，保证了双盒液晶显示器白态亮度，实现了高亮度和高对比度显示。\n\n[0006]为了实现上述目的，本发明采用以下技术方案：\n\n[0007]本发明其中一实施例中提供一种显示面板，其包括从下至上依次层叠设置的背光模组、控光液晶盒、准直膜层和显示液晶盒；具体地讲，所述控光液晶盒设于所述背光模组上；所述准直膜层设于所述控光液晶盒上，能够限制散射态的大角度光线通过；所述显示液晶盒设于所述准直膜层上；其中，所述控光液晶盒包括控光上基板、控光下基板以及在所述控光上基板和所述控光下基板之间的聚合物分散液晶层；所述显示液晶盒包括显示上基板、显示下基板以及在所述显示上基板和所述显示下基板之间的液晶层。\n\n[0008]进一步地，所述显示面板还包括：下偏光片，设于所述显示液晶盒下；以及上偏光片，设于所述显示液晶盒上。\n\n[0009]进一步地，所述显示面板还包括盖板，所述盖板设于所述显示液晶盒上。\n\n[0010]进一步地，所述准直膜层为氮化硅与氧化硅的交替膜层。\n\n[0011]进一步地，所述准直膜层的膜层数为10-50层。\n\n[0012]进一步地，所述准直膜层的厚度为100nm-1000nm。\n\n[0013]进一步地，所述背光模组包括蓝光背光灯板、侧发光背光模组或Mini-LED背光模组中的一种。\n\n[0014]进一步地，所述液晶层的材料包括热致液晶或溶致液晶，所述液晶的材料包括联苯液晶、苯基环己烷液晶或酯类液晶。\n\n[0015]进一步地，所述聚合物分散液晶层的材料包括散射型液晶；所述散射型液晶包括多个液晶分子和网状聚合物。\n\n[0016]本发明其中一实施例中提供一种显示装置，包括上述显示面板。\n\n[0017]本发明提供了一种显示面板及显示装置，采用双盒厚液晶显示技术，其中的一层液晶盒为控光液晶盒，另一层液晶盒为显示液晶盒，通过降低控光液晶盒暗态漏光，提升了控光液晶盒透过率，保证了双盒液晶显示器白态亮度，实现了高亮度和高对比度显示，弥补了LCD显示技术相较于OLED显示技术在对比度方面的差异性，并保证了LCD相较于OLED的成本优势。\n\n附图说明\n\n[0018]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0019]图1是现有的一种显示装置的漏光原理示意图；\n\n[0020]图2是本发明实施例中一种显示装置的结构示意图；\n\n[0021]图3为本发明实施例中控光液晶盒在散射态时的出光示意图；\n\n[0022]图4为本发明实施例中控光液晶盒在透明态时的出光示意图；\n\n[0023]图5是本发明实施例中准直膜层的限制散射态的大角度光线通过的原理图；\n\n[0024]图6是本发明实施例中显示装置与现有显示装置的对比度对比图。\n\n[0025]图中部件标识如下：\n\n[0026]10、背光模组，20、控光液晶盒，21、控光上基板，\n\n[0027]22、聚合物分散液晶层，23、控光下基板，30、准直膜层，\n\n[0028]40、显示液晶盒，41、显示上基板，42、液晶层，\n\n[0029]43、显示下基板，44、下偏光片，45、上偏光片，\n\n[0030]50、盖板，100、显示面板。\n\n具体实施方式\n\n[0031]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0032]需要指出的是，在附图中，为了图示的清晰可能夸大了层和区域的尺寸。而且可以理解，当元件或层被称为在另一元件或层“上”时，它可以直接在其他元件上，或者可以存在中间的层。另外，可以理解，当元件或层被称为在另一元件或层“下”时，它可以直接在其他元件下，或者可以存在一个以上的中间的层或元件。另外，还可以理解，当层或元件被称为在两层或两个元件“之间”时，它可以为两层或两个元件之间惟一的层，或还可以存在一个以上的中间层或元件。通篇相似的参考标记指示相似的元件。\n\n[0033]请参阅图2所示，本发明的其中一实施例中，提供一种显示面板100，其包括从下至上依次层叠设置的背光模组10、控光液晶盒20、准直膜层30和显示液晶盒40；具体地讲，所述控光液晶盒20设于所述背光模组10上；所述准直膜层30设于所述控光液晶盒20上，能够限制散射态的大角度光线通过；所述显示液晶盒40设于所述准直膜层30上；其中，所述控光液晶盒20包括控光上基板21、控光下基板23以及在所述控光上基板21和所述控光下基板23之间的聚合物分散液晶层22；所述显示液晶盒40包括显示上基板41、显示下基板43以及在所述显示上基板41和所述显示下基板43之间的液晶层42。\n\n[0034]请同时参阅图1、图2、图3和图4，图3为所述显示面板100包括所述准直膜层30后，所述控光液晶盒20在散射态时，所述准直膜层30限制了散射态的大角度光线(图中箭头表示)通过，漏光得到明显改善。图4为所述控光液晶盒20在透明态出光示意图，所述控光液晶盒20具有较高穿透率，加之所述准直膜层30不限制小角度出光，所述显示面板100的亮度不会受到较大影响。\n\n[0035]所述控光液晶盒20和所述准直膜层30共同实现控光功能，所述控光液晶盒20显示模式为TN模式，像素电极和共电极分别位于所述控光上基板21和所述控光下基板23上，为增大所述控光液晶盒20透过率，优选所述控光上基板21无彩膜光阻和黑色矩阵光阻，无上下偏光片架构。所述控光下基板23能够控制所述聚合物分散液晶层22的液晶旋转使其在高雾散射态和透明态之间切换，所述控光液晶盒20的驱动电压为±(5V-7V)。\n\n[0036]本实施例中，所述准直膜层30为氮化硅与氧化硅的交替膜层。即所述准直膜层30同时包括氧化硅层31以及氮化硅层32。\n\n[0037]如图5所示，所述准直膜层30由氧化硅层31以及氮化硅层32的多膜层结构组成角度控光膜层，如果为小角度出光，图5中的光线B，反射光线经过两层膜层折射后，在表面形成反射光3和反射光4，如果反射光3和反射光4的相位差为π，则相干相消的原理反射率为0，在根据光线能量守恒原理，光线基本上在膜层中全透过，因此小角度光可以透过。如果为大角度出光，图5中的光线A，则会产生反射光1和反射光2，因为反射光1、反射光2的光程差与反射光3、反射光4不一样，不满足相干相消的原理，反射光在膜层表面被反射，则光线A透过膜层的光就减少。光程差和膜层的厚度和折射率相关，设计合适的膜层厚度就可以满足大角度光多数被反射，小角度光多数实现出射。\n\n[0038]本实施例中，所述准直膜层30的膜层数为10-50层；所述准直膜层30的厚度为100nm-1000nm。所述准直膜层30能够通过垂直于所述准直膜层30所在平面的0°-40°范围的光线，即所述准直膜层30能够通过角度范围在40°以内的光线。\n\n[0039]如图6的实施例，BLU曲线表示现有显示装置的聚合物分散液晶层(PNLC)在透明态情况下的亮度随角度变化的曲线，BLU+PNLC曲线表示本实施例中显示装置的所述控光液晶盒20在散射态时的亮度随角度变化的曲线，如果没有所述准直膜层30，则全视角平均对比度可以认为是两条曲线围成的面积之比，如果可以加了一层所述准直膜层30，将40°以外的光取出，尤其是将30°以外的光取出，BLU+PNLC曲线去除的比例更大，BLU曲线去除的比例小，BLU曲线和BLU+PNLC曲线围成的面积比值会增大，全视角平均对比度就会增大。\n\n[0040]本实施例中，所述液晶层42为现有技术的普通液晶，所述液晶层42的材料包括热致液晶或溶致液晶，所述液晶的材料包括联苯液晶、苯基环己烷液晶或酯类液晶。所述聚合物分散液晶层22的材料包括散射型液晶；所述散射型液晶包括多个液晶分子和网状聚合物，可实现透明态和画面显示态的切换。\n\n[0041]所述液晶层42即普通液晶在施加电压后液晶分子发生旋转，控制光的透过率实现灰阶显示；所述聚合物分散液晶层22中由于增加了某些聚合物，二者折射率不同，通过电压控制液晶和网状聚合物的表面产生折射率差，使得光线透过或者在二者表面发生散射，因此可以实现透明态或者散射态。在透明态下可以透光，散射态下实现光线的散射进而用于显示画面。\n\n[0042]所述聚合物分散液晶层22使用的具体过程为：液晶与网状聚合物具有相同的各向异性的介电常数，两种材料均具有双折射现象，当施加的电压高于阈值电压时，液晶分子发生旋转，其方向沿着垂直方向排列，改变了液晶的介电常数的各向异性的特性，在光矢方向上液晶和网状聚合物折射率相当，因此在液晶和网状聚合物的表面不产生折射率差，光线在此处不发生散射，所述控光液晶盒20呈现透明态。不加电压或电压低于阈值电压时，液晶分子呈水平排列，在光矢方向液晶和网状聚合物折射率差异较大，光线在此处发生散射，所述控光液晶盒20呈现散射态。\n\n[0043]其中所述聚合物分散液晶层22的液晶与所述液晶层42的液晶材料相同；优选所述聚合物分散液晶层22中的聚合物网状物含量较高，散射态时所述控光液晶盒20大角度散射光较多，暗态漏光比较严重，控光作用有限，在散射态时所述控光液晶盒20的穿透率仍有40％以上。\n\n[0044]本实施例所述准直膜层30能够抑制大角度的散射光，通过小角度的光线，控光作用明显提升，有效降低了所述控光液晶盒20暗态漏光，提升了所述控光液晶盒20透过率，保证了双盒液晶显示器白态亮度，实现了高亮度和高对比度显示，弥补了LCD显示技术相较于OLED显示技术在对比度方面的差异性，并保证了LCD相较于OLED的成本优势。\n\n[0045]所述控光液晶盒20的盒厚满足Δnd＝λ/4，其中Δn为液晶的折射率各向异性，d为盒厚，Δnd表示光程差，λ为波长，λ数值为380nm-780nm，λ数值优选为500nm、550nm、600nm。\n\n[0046]继续参阅图2，在本实施例中，所述显示面板100还包括：下偏光片44，设于所述显示液晶盒40下方；以及上偏光片45，设于所述显示液晶盒40上方。具体的，所述显示液晶盒40的显示模式为TN模式、VA模式或IPS/FFS模式，所述显示上基板41包含彩膜光阻和黑色矩阵光阻，所述显示液晶盒40的驱动电压为±(4V-6V)。优选的，所述彩膜光阻的绿光像素和红光像素采用量子点彩色滤光片(QDCF)材料，采用蓝光激发光时实现高色域显示。\n\n[0047]其中所述显示液晶盒40的盒厚满足Δnd＝λ/4，其中Δn为液晶的折射率各向异性，d为盒厚，Δnd表示光程差，λ为波长，λ数值为380nm-780nm，λ数值优选为500nm、550nm、600nm。\n\n[0048]本实施例中，所述显示面板100还包括盖板50，所述盖板50设于所述显示液晶盒40上，用于保护所述显示面板100。\n\n[0049]本实施例中，所述背光模组10包括蓝光背光灯板、侧发光背光模组10或Mini-LED背光模组10中的一种。\n\n[0050]本发明其中一实施例中提供一种显示装置，包括上述显示面板100。\n\n[0051]本发明的显示装置可适用于各种场合，可与各种器件、结构相结合，既可以是显示面板，也可为带有显示功能的其他设备，例如平板电脑、电视机、显示橱窗等。应该理解，为了实现功能，本发明的显示装置带有在本说明书中未示出的其他器件、结构等。\n\n[0052]本发明提供了一种显示面板及显示装置，采用双盒厚液晶显示技术，其中的一层液晶盒为控光液晶盒，另一层液晶盒为显示液晶盒，通过降低控光液晶盒暗态漏光，提升了控光液晶盒透过率，保证了双盒液晶显示器白态亮度，实现了高亮度和高对比度显示，弥补了LCD显示技术相较于OLED显示技术在对比度方面的差异性，并保证了LCD相较于OLED的成本优势。\n\n[0053]以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10703, 23757, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示装置的制作方法及显示装置。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED)/迷你发光二极管(Mini LED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED/Mini LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但MicroLED/Mini LED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]虚拟现实(Virtual Reality，VR)/增强现实(Augmented Reality，AR)头戴显示体验过这类产品的消费者肯定最清楚，头显设备最大的发展瓶颈，就是提高屏幕的分辨率，更高的分辨率能让虚拟画面更接近于真实世界，当然还要有足够的亮度、足够真实的色彩表现。这些参数的要求，比市面上最好的显示装置可能还要高上10倍，比如亮度要达到10000nit，而只有Micro LED/Mini LED显示器才有如此潜力。另外Micro LED/Mini LED显示器也可以应用于汽车和其他环境中的平视显示器中。\n\n[0005]AR/VR显示和车载挡风玻璃的显示应用场景要求显示屏具有高的分辨率和穿透率，现有Micro LED/Mini LED显示屏虽然通过在玻璃基板上制备金属氧化物半导体薄膜晶体管器件进行有源驱动实现50％的穿透率，但仍不能满足AR/VR显示和汽车挡风玻璃达到70％以上的穿透率的需求。\n\n发明内容\n\n[0006]本发明的目的在于提供一种显示装置的制作方法，能够提升显示装置分辨率与穿透率，改善显示品质。\n\n[0007]本发明的目的还在于提供一种显示装置，能够提升显示装置分辨率与穿透率，改善显示品质。\n\n[0008]为实现上述目的，本发明提供了一种显示装置的制作方法，包括如下步骤：\n\n[0009]步骤S1、提供背板，所述背板包括衬底基板及设于所述衬底基板上的驱动电路；\n\n[0010]步骤S2、形成多个LED芯片，每一个LED芯片分别包括一底电极及一顶电极；\n\n[0011]步骤S3、将所述多个LED芯片竖直转移到所述背板上，并使得所述多个LED芯片的底电极与驱动电路电性连接；\n\n[0012]步骤S4、提供盖板，所述盖板包括本体及设于所述本体上的接地电路；\n\n[0013]步骤S5、将所述盖板盖合至所述背板上，并使得所述接地电路至少正对所述驱动电路的一部分，且各个LED芯片的顶电极与所述接地电路电性连接；\n\n[0014]步骤S6、按压所述盖板，使得竖直状态的LED芯片变为倾斜状态。\n\n[0015]所述LED芯片为Mini LED芯片或Micro LED芯片。\n\n[0016]所述驱动电路包括多个薄膜晶体管、多条扫描线及多条数据线，所述多个薄膜晶体管阵列排布，每一条扫描线电性连接一行薄膜薄膜晶体管的栅极，每一条数据线电性连接一列薄膜晶体管的源极，每一个LED芯片的底电极电性连接一个薄膜晶体管的漏极。\n\n[0017]所述接地电路包括多条接地线，盖合后每一条接地线正对一条扫描线(22)或一条数据线。\n\n[0018]所述LED芯片的底电极和顶电极通过锡膏分别与所述驱动电路及接地电路电性连接。\n\n[0019]本发明还提供一种显示装置，包括相对设置的背板与盖板以及设于所述背板与盖板之间的多个LED芯片；\n\n[0020]所述背板包括衬底基板及设于所述衬底基板上的驱动电路；\n\n[0021]所述盖板包括本体及设于所述本体上的接地电路，且所述接地电路至少正对所述驱动电路的一部分\n\n[0022]每一个LED芯片分别包括一底电极及一顶电极，所述底电极电性连接所述驱动电路，所述顶电极电性连接接地电路，所述LED芯片相对于竖直方向倾斜设置。\n\n[0023]所述LED芯片为Mini LED芯片或Micro LED芯片。\n\n[0024]所述驱动电路包括多个薄膜晶体管、多条扫描线及多条数据线，所述多个薄膜晶体管阵列排布，每一条扫描线电性连接一行薄膜薄膜晶体管的栅极，每一条数据线电性连接一列薄膜晶体管的源极，每一个LED芯片的底电极电性连接一个薄膜晶体管的漏极。\n\n[0025]所述接地电路包括多条接地线，每一条接地线正对一条扫描线或一条数据线。\n\n[0026]所述LED芯片的底电极和顶电极通过锡膏分别与所述驱动电路及接地电路电性连接。\n\n[0027]本发明的有益效果：本发明提供了一种显示装置的制作方法，包括如下步骤：提供背板，所述背板包括衬底基板及设于所述衬底基板上的驱动电路；形成多个LED芯片，每一个LED芯片分别包括一底电极及一顶电极；将所述多个LED芯片竖直转移到所述背板上，并使得所述多个LED芯片的底电极与驱动电路电性连接；提供盖板，所述盖板包括本体及设于所述本体上的接地电路；将所述盖板盖合至所述背板上，并使得所述接地电路至少正对所述驱动电路的一部分，且各个LED芯片的顶电极与所述接地电路电性连接；按压所述盖板，使得竖直状态的LED芯片变为倾斜状态，通过对LED芯片的位置的调整，能够提升显示装置分辨率与穿透率，改善显示品质。本发明还提供一种显示装置，能够提升显示装置分辨率与穿透率，改善显示品质。\n\n附图说明\n\n[0028]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0029]附图中，\n\n[0030]图1为本发明的显示装置的制作方法的步骤S1的示意图；\n\n[0031]图2及图3为本发明的显示装置的制作方法的步骤S2至步骤S3的示意图；\n\n[0032]图4为本发明的显示装置的制作方法的步骤S4的示意图；\n\n[0033]图5及图6为本发明的显示装置的制作方法的步骤S5的示意图；\n\n[0034]图7为本发明的显示装置的制作方法的步骤S6的示意图暨本发明的显示装置的示意图；\n\n[0035]图8为本发明的显示装置中驱动电路的示意图；\n\n[0036]图9为本发明的显示装置中接地电路的示意图；\n\n[0037]图10为本发明的显示装置的制作方法的流程图。\n\n具体实施方式\n\n[0038]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0039]请参阅图10，本发明提供一种显示装置的制作方法，包括如下步骤：\n\n[0040]步骤S1、如图1所示，提供背板10，所述背板10包括衬底基板1及设于所述衬底基板1上的驱动电路2。\n\n[0041]具体地，如图8所示，所述驱动电路2包括多个薄膜晶体管21、多条扫描线22及多条数据线23，所述多个薄膜晶体管21阵列排布，每一条扫描线22电性连接一行薄膜薄膜晶体管21的栅极，每一条数据线23电性连接一列薄膜晶体管21的源极。\n\n[0042]步骤S2、如图3所示，形成多个LED芯片3，每一个LED芯片3分别包括一底电极31及一顶电极32。\n\n[0043]具体地，所述LED芯片3为Mini LED芯片或Micro LED芯片。\n\n[0044]步骤S3、如图3所示，将所述多个LED芯片3竖直转移到所述背板1上，并使得所述多个LED芯片3的底电极与驱动电路2电性连接。\n\n[0045]具体地，结合图2，所述步骤S3的详细过程为：对所述背板10进行清洗，在各个薄膜晶体管21的漏极点上锡膏，接着通过真空吸附将所述多个LED芯片3竖直巨量转移到所述各个锡膏上，最后利用高温使得锡膏回流固化固住所述LED芯片3，并使得各个LED芯片3的底电极31与各个薄膜晶体管21的漏极电性连接。\n\n[0046]步骤S4、如图4所示，提供盖板20，所述盖板20包括本体4及设于所述本体4上的接地电路5。\n\n[0047]步骤S5、如图5及图6所示，将所述盖板20盖合至所述背板10上，并使得所述接地电路5至少正对所述驱动电路2的一部分，且各个LED芯片3的顶电极32与所述接地电路5电性连接。\n\n[0048]具体地，如图9所示，所述接地电路5包括多条接地线51，盖合后每一条接地线51正对一条扫描线22或一条数据线23。\n\n[0049]进一步地，为了保证对位准确，所述背板10及盖板20上还设有对位标记。\n\n[0050]具体地，所述步骤S5中盖板20清洗后放置到背板上面，通过背板10及盖板20上的对位标记使盖板20上的接地线51与背板10的扫描线22或数据线23对位重叠，从而减少走线对显示装置的穿透率的影响，同时使背板10上站立的LED芯片3接触到盖板20的锡膏6，使得各个LED芯片3的顶电极与所述接地电路5电性连接。\n\n[0051]步骤S6、如图7所示，按压所述盖板20，使得竖直状态的LED芯片3变为倾斜状态。\n\n[0052]详细地，所述步骤S6中，通过控制温度使背板10和盖板20上的锡膏6缓慢再次融化，同时按压盖板20使LED芯片3发生倾斜，通过控制盒厚实现LED芯片3的不同倾斜角度，从而实现不同的穿透率达到控制透明度的目的。\n\n[0053]从而，本发明设置LED芯片3直立倾斜摆放，具有结构简单，可调控空间大以及良率高的优点，同时设置接地电路与驱动电路部分重叠，以减少走线和LED芯片3的投影面积，可显著提高Mini LED芯片或Micro LED芯片显示面板的穿透率，同时通过控制盒厚实现像素大小的调控，可以有效设计和调节显示屏的分辨率。\n\n[0054]请参阅图7，并结合图8和图9，本发明提供一种显示装置，包括相对设置的背板10与盖板20以及设于所述背板10与盖板20之间的多个LED芯片3；\n\n[0055]所述背板10包括衬底基板1及设于所述衬底基板1上的驱动电路2；\n\n[0056]所述盖板20包括本体4及设于所述本体4上的接地电路5，且所述接地电路5至少正对所述驱动电路2的一部分\n\n[0057]每一个LED芯片3分别包括一底电极31及一顶电极32，所述底电极31电性连接所述驱动电路2，所述顶电极32电性连接接地电路5，所述LED芯片3相对于竖直方向倾斜设置。\n\n[0058]具体地，所述LED芯片3为Mini LED芯片或Micro LED芯片。\n\n[0059]具体地，所述驱动电路2包括多个薄膜晶体管21、多条扫描线22及多条数据线23，所述多个薄膜晶体管21阵列排布，每一条扫描线22电性连接一行薄膜薄膜晶体管21的栅极，每一条数据线23电性连接一列薄膜晶体管的源极，每一个LED芯片3的底电极电性连接一个薄膜晶体管21的漏极。\n\n[0060]具体地，所述接地电路5包括多条接地线51，每一条接地线51正对一条扫描线22或一条数据线23。\n\n[0061]具体地，所述LED芯片3的底电极和顶电极通过锡膏6分别与所述驱动电路2及接地电路5电性连接。\n\n[0062]进一步地，为了保证对位准确，所述背板10及盖板20上还设有对位标记，通过背板10及盖板20上的对位标记使盖板20上的接地线51与背板10的扫描线22或数据线23对位重叠，从而减少走线对显示装置的穿透率的影响。\n\n[0063]具体地，本发明设置LED芯片3直立倾斜摆放，具有结构简单，可调控空间大以及良率高的优点，同时设置接地电路与驱动电路部分重叠，以减少走线和LED芯片3的投影面积，可显著提高Mini LED芯片或Micro LED芯片显示面板的穿透率，同时通过控制盒厚实现像素大小的调控，可以有效设计和调节显示屏的分辨率。\n\n[0064]综上所述，本发明提供了一种显示装置的制作方法，包括如下步骤：提供背板，所述背板包括衬底基板及设于所述衬底基板上的驱动电路；形成多个LED芯片，每一个LED芯片分别包括一底电极及一顶电极；将所述多个LED芯片竖直转移到所述背板上，并使得所述多个LED芯片的底电极与驱动电路电性连接；提供盖板，所述盖板包括本体及设于所述本体上的接地电路；将所述盖板盖合至所述背板上，并使得所述接地电路至少正对所述驱动电路的一部分，且各个LED芯片的顶电极与所述接地电路电性连接；按压所述盖板，使得竖直状态的LED芯片变为倾斜状态，通过对LED芯片的位置的调整，能够提升显示装置分辨率与穿透率，改善显示品质。本发明还提供一种显示装置，能够提升显示装置分辨率与穿透率，改善显示品质。\n\n[0065]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示装置的制作方法及显示装置。\n\n背景技术\n\n[0002]平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。\n\n[0003]微发光二极管(Micro LED)/迷你发光二极管(Mini LED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED/Mini LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但MicroLED/Mini LED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。\n\n[0004]虚拟现实(Virtual Reality，VR)/增强现实(Augmented Reality，AR)头戴显示体验过这类产品的消费者肯定最清楚，头显设备最大的发展瓶颈，就是提高屏幕的分辨率，更高的分辨率能让虚拟画面更接近于真实世界，当然还要有足够的亮度、足够真实的色彩表现。这些参数的要求，比市面上最好的显示装置可能还要高上10倍，比如亮度要达到10000nit，而只有Micro LED/Mini LED显示器才有如此潜力。另外Micro LED/Mini LED显示器也可以应用于汽车和其他环境中的平视显示器中。\n\n[0005]AR/VR显示和车载挡风玻璃的显示应用场景要求显示屏具有高的分辨率和穿透率，现有Micro LED/Mini LED显示屏虽然通过在玻璃基板上制备金属氧化物半导体薄膜晶体管器件进行有源驱动实现50％的穿透率，但仍不能满足AR/VR显示和汽车挡风玻璃达到70％以上的穿透率的需求。\n\n发明内容\n\n[0006]本发明的目的在于提供一种显示装置的制作方法，能够提升显示装置分辨率与穿透率，改善显示品质。\n\n[0007]本发明的目的还在于提供一种显示装置，能够提升显示装置分辨率与穿透率，改善显示品质。\n\n[0008]为实现上述目的，本发明提供了一种显示装置的制作方法，包括如下步骤：\n\n[0009]步骤S1、提供背板，所述背板包括衬底基板及设于所述衬底基板上的驱动电路；\n\n[0010]步骤S2、形成多个LED芯片，每一个LED芯片分别包括一底电极及一顶电极；\n\n[0011]步骤S3、将所述多个LED芯片竖直转移到所述背板上，并使得所述多个LED芯片的底电极与驱动电路电性连接；\n\n[0012]步骤S4、提供盖板，所述盖板包括本体及设于所述本体上的接地电路；\n\n[0013]步骤S5、将所述盖板盖合至所述背板上，并使得所述接地电路至少正对所述驱动电路的一部分，且各个LED芯片的顶电极与所述接地电路电性连接；\n\n[0014]步骤S6、按压所述盖板，使得竖直状态的LED芯片变为倾斜状态。\n\n[0015]所述LED芯片为Mini LED芯片或Micro LED芯片。\n\n[0016]所述驱动电路包括多个薄膜晶体管、多条扫描线及多条数据线，所述多个薄膜晶体管阵列排布，每一条扫描线电性连接一行薄膜薄膜晶体管的栅极，每一条数据线电性连接一列薄膜晶体管的源极，每一个LED芯片的底电极电性连接一个薄膜晶体管的漏极。\n\n[0017]所述接地电路包括多条接地线，盖合后每一条接地线正对一条扫描线(22)或一条数据线。\n\n[0018]所述LED芯片的底电极和顶电极通过锡膏分别与所述驱动电路及接地电路电性连接。\n\n[0019]本发明还提供一种显示装置，包括相对设置的背板与盖板以及设于所述背板与盖板之间的多个LED芯片；\n\n[0020]所述背板包括衬底基板及设于所述衬底基板上的驱动电路；\n\n[0021]所述盖板包括本体及设于所述本体上的接地电路，且所述接地电路至少正对所述驱动电路的一部分\n\n[0022]每一个LED芯片分别包括一底电极及一顶电极，所述底电极电性连接所述驱动电路，所述顶电极电性连接接地电路，所述LED芯片相对于竖直方向倾斜设置。\n\n[0023]所述LED芯片为Mini LED芯片或Micro LED芯片。\n\n[0024]所述驱动电路包括多个薄膜晶体管、多条扫描线及多条数据线，所述多个薄膜晶体管阵列排布，每一条扫描线电性连接一行薄膜薄膜晶体管的栅极，每一条数据线电性连接一列薄膜晶体管的源极，每一个LED芯片的底电极电性连接一个薄膜晶体管的漏极。\n\n[0025]所述接地电路包括多条接地线，每一条接地线正对一条扫描线或一条数据线。\n\n[0026]所述LED芯片的底电极和顶电极通过锡膏分别与所述驱动电路及接地电路电性连接。\n\n[0027]本发明的有益效果：本发明提供了一种显示装置的制作方法，包括如下步骤：提供背板，所述背板包括衬底基板及设于所述衬底基板上的驱动电路；形成多个LED芯片，每一个LED芯片分别包括一底电极及一顶电极；将所述多个LED芯片竖直转移到所述背板上，并使得所述多个LED芯片的底电极与驱动电路电性连接；提供盖板，所述盖板包括本体及设于所述本体上的接地电路；将所述盖板盖合至所述背板上，并使得所述接地电路至少正对所述驱动电路的一部分，且各个LED芯片的顶电极与所述接地电路电性连接；按压所述盖板，使得竖直状态的LED芯片变为倾斜状态，通过对LED芯片的位置的调整，能够提升显示装置分辨率与穿透率，改善显示品质。本发明还提供一种显示装置，能够提升显示装置分辨率与穿透率，改善显示品质。\n\n附图说明\n\n[0028]为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。\n\n[0029]附图中，\n\n[0030]图1为本发明的显示装置的制作方法的步骤S1的示意图；\n\n[0031]图2及图3为本发明的显示装置的制作方法的步骤S2至步骤S3的示意图；\n\n[0032]图4为本发明的显示装置的制作方法的步骤S4的示意图；\n\n[0033]图5及图6为本发明的显示装置的制作方法的步骤S5的示意图；\n\n[0034]图7为本发明的显示装置的制作方法的步骤S6的示意图暨本发明的显示装置的示意图；\n\n[0035]图8为本发明的显示装置中驱动电路的示意图；\n\n[0036]图9为本发明的显示装置中接地电路的示意图；\n\n[0037]图10为本发明的显示装置的制作方法的流程图。\n\n具体实施方式\n\n[0038]为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。\n\n[0039]请参阅图10，本发明提供一种显示装置的制作方法，包括如下步骤：\n\n[0040]步骤S1、如图1所示，提供背板10，所述背板10包括衬底基板1及设于所述衬底基板1上的驱动电路2。\n\n[0041]具体地，如图8所示，所述驱动电路2包括多个薄膜晶体管21、多条扫描线22及多条数据线23，所述多个薄膜晶体管21阵列排布，每一条扫描线22电性连接一行薄膜薄膜晶体管21的栅极，每一条数据线23电性连接一列薄膜晶体管21的源极。\n\n[0042]步骤S2、如图3所示，形成多个LED芯片3，每一个LED芯片3分别包括一底电极31及一顶电极32。\n\n[0043]具体地，所述LED芯片3为Mini LED芯片或Micro LED芯片。\n\n[0044]步骤S3、如图3所示，将所述多个LED芯片3竖直转移到所述背板1上，并使得所述多个LED芯片3的底电极与驱动电路2电性连接。\n\n[0045]具体地，结合图2，所述步骤S3的详细过程为：对所述背板10进行清洗，在各个薄膜晶体管21的漏极点上锡膏，接着通过真空吸附将所述多个LED芯片3竖直巨量转移到所述各个锡膏上，最后利用高温使得锡膏回流固化固住所述LED芯片3，并使得各个LED芯片3的底电极31与各个薄膜晶体管21的漏极电性连接。\n\n[0046]步骤S4、如图4所示，提供盖板20，所述盖板20包括本体4及设于所述本体4上的接地电路5。\n\n[0047]步骤S5、如图5及图6所示，将所述盖板20盖合至所述背板10上，并使得所述接地电路5至少正对所述驱动电路2的一部分，且各个LED芯片3的顶电极32与所述接地电路5电性连接。\n\n[0048]具体地，如图9所示，所述接地电路5包括多条接地线51，盖合后每一条接地线51正对一条扫描线22或一条数据线23。\n\n[0049]进一步地，为了保证对位准确，所述背板10及盖板20上还设有对位标记。\n\n[0050]具体地，所述步骤S5中盖板20清洗后放置到背板上面，通过背板10及盖板20上的对位标记使盖板20上的接地线51与背板10的扫描线22或数据线23对位重叠，从而减少走线对显示装置的穿透率的影响，同时使背板10上站立的LED芯片3接触到盖板20的锡膏6，使得各个LED芯片3的顶电极与所述接地电路5电性连接。\n\n[0051]步骤S6、如图7所示，按压所述盖板20，使得竖直状态的LED芯片3变为倾斜状态。\n\n[0052]详细地，所述步骤S6中，通过控制温度使背板10和盖板20上的锡膏6缓慢再次融化，同时按压盖板20使LED芯片3发生倾斜，通过控制盒厚实现LED芯片3的不同倾斜角度，从而实现不同的穿透率达到控制透明度的目的。\n\n[0053]从而，本发明设置LED芯片3直立倾斜摆放，具有结构简单，可调控空间大以及良率高的优点，同时设置接地电路与驱动电路部分重叠，以减少走线和LED芯片3的投影面积，可显著提高Mini LED芯片或Micro LED芯片显示面板的穿透率，同时通过控制盒厚实现像素大小的调控，可以有效设计和调节显示屏的分辨率。\n\n[0054]请参阅图7，并结合图8和图9，本发明提供一种显示装置，包括相对设置的背板10与盖板20以及设于所述背板10与盖板20之间的多个LED芯片3；\n\n[0055]所述背板10包括衬底基板1及设于所述衬底基板1上的驱动电路2；\n\n[0056]所述盖板20包括本体4及设于所述本体4上的接地电路5，且所述接地电路5至少正对所述驱动电路2的一部分\n\n[0057]每一个LED芯片3分别包括一底电极31及一顶电极32，所述底电极31电性连接所述驱动电路2，所述顶电极32电性连接接地电路5，所述LED芯片3相对于竖直方向倾斜设置。\n\n[0058]具体地，所述LED芯片3为Mini LED芯片或Micro LED芯片。\n\n[0059]具体地，所述驱动电路2包括多个薄膜晶体管21、多条扫描线22及多条数据线23，所述多个薄膜晶体管21阵列排布，每一条扫描线22电性连接一行薄膜薄膜晶体管21的栅极，每一条数据线23电性连接一列薄膜晶体管的源极，每一个LED芯片3的底电极电性连接一个薄膜晶体管21的漏极。\n\n[0060]具体地，所述接地电路5包括多条接地线51，每一条接地线51正对一条扫描线22或一条数据线23。\n\n[0061]具体地，所述LED芯片3的底电极和顶电极通过锡膏6分别与所述驱动电路2及接地电路5电性连接。\n\n[0062]进一步地，为了保证对位准确，所述背板10及盖板20上还设有对位标记，通过背板10及盖板20上的对位标记使盖板20上的接地线51与背板10的扫描线22或数据线23对位重叠，从而减少走线对显示装置的穿透率的影响。\n\n[0063]具体地，本发明设置LED芯片3直立倾斜摆放，具有结构简单，可调控空间大以及良率高的优点，同时设置接地电路与驱动电路部分重叠，以减少走线和LED芯片3的投影面积，可显著提高Mini LED芯片或Micro LED芯片显示面板的穿透率，同时通过控制盒厚实现像素大小的调控，可以有效设计和调节显示屏的分辨率。\n\n[0064]综上所述，本发明提供了一种显示装置的制作方法，包括如下步骤：提供背板，所述背板包括衬底基板及设于所述衬底基板上的驱动电路；形成多个LED芯片，每一个LED芯片分别包括一底电极及一顶电极；将所述多个LED芯片竖直转移到所述背板上，并使得所述多个LED芯片的底电极与驱动电路电性连接；提供盖板，所述盖板包括本体及设于所述本体上的接地电路；将所述盖板盖合至所述背板上，并使得所述接地电路至少正对所述驱动电路的一部分，且各个LED芯片的顶电极与所述接地电路电性连接；按压所述盖板，使得竖直状态的LED芯片变为倾斜状态，通过对LED芯片的位置的调整，能够提升显示装置分辨率与穿透率，改善显示品质。本发明还提供一种显示装置，能够提升显示装置分辨率与穿透率，改善显示品质。\n\n[0065]以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10704, 23758, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其是涉及一种背光模组和显示装置。\n\n背景技术\n\n[0002]现有miniLED作为直下式显示背光源，具有高亮度、高对比度、可实现局部显示、可实现窄边框等优势，被广泛应用，针对较大尺寸的显示器件，会拼接miniLED作为背光源，但对于拼接miniLED，在拼接处会存在较明显的拼接缝隙，在显示时，会出现拼接暗线，影响显示效果。\n\n[0003]所以，现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题。\n\n发明内容\n\n[0004]本发明提供一种背光模组和显示装置，用于解决现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题。\n\n[0005]为解决上述问题，本发明提供的技术方案如下：\n\n[0006]本发明提供一种背光模组，该背光模组包括：\n\n[0007]背板；\n\n[0008]光源，包括拼接设置在所述背板上的第一灯条和第二灯条；\n\n[0009]导光构件，设置于所述拼接区域；\n\n[0010]扩散片，设置于所述导光构件上，用于使光均匀射出；\n\n[0011]棱镜片，设置于所述扩散片上；\n\n[0012]其中，所述导光构件用于将光源无法传导至拼接区域的扩散片上的光线，传导至拼接区域的扩散片上。\n\n[0013]在本发明提供的背光模组中，所述导光构件的纵截面为实心平行四边形，所述导光构件从拼接区域延伸至所述第一灯条或者第二灯条上方，所述导光构件的纵截面与所述光源的纵截面形成锐角。\n\n[0014]在本发明提供的背光模组中，所述导光构件的纵截面为实心倒梯形，且所述导光构件从拼接区域分别延伸至所述第一灯条和第二灯条，所述导光构件的纵截面与所述光源的纵截面形成锐角。\n\n[0015]在本发明提供的背光模组中，所述第一灯条包括阵列设置的发光单元，所述第二灯条包括阵列设置的发光单元。\n\n[0016]在本发明提供的背光模组中，所述导光构件的下底的宽度小于等于所述第一灯条中的最靠近拼接区域的发光单元与拼接区域的距离、拼接区域的宽度、以及第二灯条中的最靠近拼接区域的发光单元与拼接区域的距离的和。\n\n[0017]在本发明提供的背光模组中，所述导光构件的纵截面为空心倒梯形，所述导光构件从拼接区域分别延伸至所述第一灯条和第二灯条，形成位于所述第一灯条上方的第一转换壁、位于所述第二灯条上方的第二转换壁、以及位于所述拼接区域上方的连接壁，所述导光构件的纵截面与所述光源的纵截面形成锐角。\n\n[0018]在本发明提供的背光模组中，所述第一转换壁的出光面上设有凸透镜，所述第二转换壁的出光面上设有凸透镜。\n\n[0019]在本发明提供的背光模组中，所述连接壁包括第一连接壁和第二连接壁，所述第一连接壁与所述第二连接壁相对设置。\n\n[0020]在本发明提供的背光模组中，所述连接壁的宽度等于所述拼接区域的宽度。\n\n[0021]同时，本发明提供一种显示装置，该显示装置包括：\n\n[0022]显示面板，包括第一基板、第二基板、以及位于所述第一基板和第二基板之间的液晶层；\n\n[0023]背光模组，设置于所述显示面板下方，包括背板、光源、导光构件、扩散片和棱镜片，所述光源包括拼接设置在所述背板上的第一灯条和第二灯条，所述导光构件设置于所述拼接区域，所述扩散片设置于所述导光构件上，用于使光均匀射出，所述棱镜片设置于所述扩散片上；其中，所述导光构件用于将光源无法传导至拼接区域的扩散片上的光线，传导至拼接区域的扩散片上。\n\n[0024]有益效果：本发明提供一种背光模组和显示装置，该背光模组包括背板、光源、导光构件、扩散片和棱镜片，所述光源包括拼接设置在所述背板上的第一灯条和第二灯条，所述导光构件设置于所述拼接区域，所述扩散片设置于所述导光构件上，用于使光均匀射出，所述棱镜片设置于所述扩散片上，其中，所述导光构件用于将光源无法传导至拼接区域的扩散片上的光线，传导至拼接区域的扩散片上；通过在拼接区域设置导光构件，使得导光构件将光源无法传导至拼接区域的扩散片上的光线传导至拼接区域的扩散片上，从而使得拼接区域的扩散片上的光线的强度增强，使得拼接区域正常显示，缓解了现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题。\n\n附图说明\n\n[0025]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0026]图1为本发明实施例提供的背光模组的第一示意图；\n\n[0027]图2为本发明实施例提供的背光模组的第二示意图；\n\n[0028]图3为本发明实施例提供的背光模组的第三示意图；\n\n[0029]图4为本发明实施例提供的背光模组的第四示意图；\n\n[0030]图5为本发明实施例提供的显示装置的示意图。\n\n具体实施方式\n\n[0031]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0032]本发明针对现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题，本发明实施例用以解决该问题。\n\n[0033]如图1所示，本发明实施例提供一种背光模组，该背光模组包括：\n\n[0034]背板11；\n\n[0035]光源12，包括拼接设置在所述背板11上的第一灯条121和第二灯条122；\n\n[0036]导光构件13，设置于所述拼接区域161；\n\n[0037]扩散片14，设置于所述导光构件13上，用于使光均匀射出；\n\n[0038]棱镜片15，设置于所述扩散片14上；\n\n[0039]其中，所述导光构件13用于将光源12无法传导至拼接区域161的扩散片14上的光线，传导至拼接区域161的扩散片14上。\n\n[0040]本发明实施例提供一种背光模组，该背光模组包括背板、光源、导光构件、扩散片和棱镜片，所述光源包括拼接设置在所述背板上的第一灯条和第二灯条，所述导光构件设置于所述拼接区域，所述扩散片设置于所述导光构件上，用于使光均匀射出，所述棱镜片设置于所述扩散片上，其中，所述导光构件用于将光源无法传导至拼接区域的扩散片上的光线，传导至拼接区域的扩散片上；通过在拼接区域设置导光构件，使得导光构件将光源无法传导至拼接区域的扩散片上的光线传导至拼接区域的扩散片上，从而使得拼接区域的扩散片上的光线的强度增强，使得拼接区域正常显示，缓解了现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题。\n\n[0041]需要说明的是，图1中所述背板11包括第一背板111和第二背板112，所述第一灯条121设置于所述第一背板111上，所述第二灯条122设置于所述第二背板112上。\n\n[0042]需要说明的是，第一灯条121与第二灯条122通过拼接构件拼接，图1中未示出拼接构件。\n\n[0043]在一种实施例中，所述导光构件的纵截面为实心平行四边形，所述导光构件从拼接区域延伸至所述第一灯条或者第二灯条上方，所述导光构件的纵截面与所述光源的纵截面形成锐角，如图2所示，导光构件13从拼接区域延伸至第二灯条122上，导光构件13的纵截面与所述第二灯条122的纵截面形成锐角A，在拼接区域，通过在拼接区域设置导光构件，并使所述导光构件延伸至第二灯条上方，使得导光构件将第二灯条发出的无法传导至拼接区域的光传导至拼接区域的扩散片上，使得拼接区域的扩散片上的光线增强，甚至使得拼接区域的光线强度与第二灯条上方的光线强度一致，从而缓解现有拼接区域存在拼接暗线的问题。\n\n[0044]在一种实施例中，所述导光构件从拼接区域延伸至第一灯条上，所述导光构件的纵截面与所述第一灯条的纵截面形成锐角，在拼接区域设置导光构件，并使导光构件延伸至第一灯条上，使得导光构件将第一灯条发出的无法传导至拼接区域的光传导至拼接区域，从而使得拼接区域的扩散片上的光线强度增大，甚至使得拼接区域的扩散片上的光线与第一灯条上方的扩散片上的光线的强度一致，从而缓解拼接暗线的问题；而针对第一灯条和第二灯条，可使导光构件向第一灯条或者第二灯条上延伸，从而使得导光构件将第一灯条和第二灯条上的光线传导至拼接区域的扩散片上，增强拼接区域的扩散片上的光线强度，缓解现有拼接区域的拼接暗线。\n\n[0045]在一种实施例中，所述导光构件的纵截面为实心平行四边形，所述导光构件的宽度大于所述第一灯条的最靠近拼接区域的发光单元与拼接区域的距离、与第一灯条的最靠近拼接区域的发光单元的宽度的和，通过使导光构件从拼接区域延伸至第一灯条，使得导光构件设置在第一灯条上方，从而使得第一灯条的光线从导光构件的底面进入，然后通过导光构件将光线聚集到拼接区域的扩散片上。\n\n[0046]在一种实施例中，所述导光构件的纵截面为实心平行四边形，所述导光构件的宽度大于所述第二灯条的最靠近拼接区域的发光单元与拼接区域的距离、与第二灯条的最靠近拼接区域的发光单元的宽度的和，通过使导光构件从拼接区域延伸至第二灯条，使得导光构件设置在第二灯条上方，从而使得第二灯条的光线从导光构件的底面进入，然后通过导光构件将光线聚集到拼接区域的扩散片上。\n\n[0047]在一种实施例中，所述导光构件包括入光面和出光面，所述出光面上设有凸透镜，对应导光构件的纵截面的平行四边形，将平行四边形的底边作为入光面，将平行四边形靠近拼接区域的侧边作为出光面，在出光面上设置凸透镜，使得直射进入导光构件的光线聚集到拼接区域。\n\n[0048]在一种实施例中，在导光构件单独设置于第一灯条或者第二灯条上时，导光构件从所述拼接处延伸至第一灯条或者第二灯条上，使得导光构件能够完整接收到光源的光，从而将靠近拼接区域的光传导至拼接区域，缓解拼接区域的拼接暗线。\n\n[0049]在一种实施例中，如图3所示，所述导光构件13的纵截面为实心倒梯形，且所述导光构件13从拼接区域分别延伸至所述第一灯条121和第二灯条122，所述导光构件的纵截面与所述光源的纵截面形成锐角，在导光构件从拼接区域向第一灯条和第二灯条延伸，使得导光构件通过将第一灯条和第二灯条无法传导至拼接区域的扩散片上的光传导至拼接区域的扩散片上，且由于导光构件将第一灯条和第二灯条的光线均传导至拼接区域，使得拼接区域的扩散片上的光线强度极大的增强，甚至使得拼接区域的扩散片上的光线强度与所述第一灯条和第二灯条上方的光线强度一致，从而缓解甚至解决现有拼接区域拼接暗线的问题。\n\n[0050]在一种实施例中，如图3所示，所述第一灯条121包括阵列设置的发光单元1211，所述第二灯条122包括阵列设置的发光单元1221。\n\n[0051]在一种实施例中，第一灯条和第二灯条可由多个发光单元组成，且第一灯条内的发光单元之间的间距相等，第二灯条内的发光单元的间距相等，第一灯条与第二灯条相同。\n\n[0052]在一种实施例中，所述发光单元包括miniLED，所述miniLED包括蓝光miniLED。\n\n[0053]在一种实施例中，如图3所示，所述导光构件的下底的宽度L等于所述第一灯条中最靠近拼接区域的发光单元与拼接区域的距离L12、拼接区域的宽度L6、以及第二灯条中的最靠近拼接区域的发光单元与拼接区域的距离L21的和；即L＝L12+L6+L21，通过将导光构件的下底的宽度设置为L12、L6和L21的和，且导光构件与光源之间的夹角为锐角，则第一灯条和第二灯条的光线必然会从导光构件的入光面，即实心倒梯形的腰进入导光构件，然后导光构件的入光面通过将第一灯条和第二灯条的最靠近拼接区域的一个发光单元发出的光线向拼接区域聚集，使得拼接区域的扩散片上的光线增强，从而缓解现有拼接区域存在的拼接暗线的问题。\n\n[0054]在一种实施例中，所述导光构件的下底大于拼接区域的宽度，且所述导光构件的下底的宽度小于所述第一灯条中的最靠近拼接区域的发光单元与拼接区域的距离、拼接区域的宽度、以及第二灯条中的最靠近拼接区域的发光单元与拼接区域的距离的和；从而使得光线能够从导光构件的侧面进入，使得光线向拼接区域聚集，使得拼接区域的扩散片上的光线增强，从而缓解现有拼接区域存在的拼接暗线的问题。\n\n[0055]在一种实施例中，如图3所示，所述导光构件13设置于所述第一灯条121中的发光单元1211的出光路径上，所述导光构件13包括入光面和出光面，即倒梯形的腰为入光面，与扩散片接触的上底为出光面，所述入光面上设有凸透镜；在导光构件为实体时，光线进入导光构件后将不会发生角度的变化，则在光线从导光构件的入光面进入时，导光构件上的凸透镜改变光线的方向，然后光线从拼接处射出，缓解拼接处的拼接暗线。\n\n[0056]在一种实施例中，如图3所示，图3中示出第一灯条中的最靠近拼接区域的发光单元的宽度L11、第二灯条中的最靠近拼接区域的发光单元的宽度L22，所述导光构件的下底的宽度L等于所述第一灯条中的最靠近拼接区域的发光单元的宽度L11、所述第一灯条中的最靠近拼接区域的发光单元与拼接区域的距离L12、拼接区域的宽度L6、第二灯条中的最靠近拼接区域的发光单元与拼接区域的距离L21、以及第二灯条中的最靠近拼接区域的发光单元的宽度L22的和；即L＝L11+L12+L6+L21+L22，使得导光构件的下底的宽度为L11、L12、L6、L21、L22的和，使得导光构件通过将第一灯条和第二灯条靠近拼接区域的倒数第二个发光单元的光线传导至拼接区域的扩散片上，且第一灯条和第二灯条上最靠近拼接区域的发光单元发出的光线可直接穿过导光构件，使得对应第一灯条最靠近拼接区域的发光单元的上方正常发光，在缓解现有拼接区域的拼接暗线的同时，使得第一灯条和第二灯条上方正常发光。\n\n[0057]在一种实施例中，如图1所示，所述导光构件的纵截面为空心倒梯形，所述导光构件13从拼接区域161分别延伸至所述第一灯条121和第二灯条122，形成位于所述第一灯条121上方的第一转换壁131、位于所述第二灯条122上方的第二转换壁132、以及位于所述拼接区域上方的连接壁133，所述导光构件的纵截面与所述光源的纵截面形成锐角，在拼接区域设置导光构件时，可使导光构件分别在第一灯条上形成第一转换壁，第一转换壁将第一灯条发出的光线传导至拼接区域的扩散片上，导光构件在第二灯条上形成第二转换壁，第二转换壁将第二灯条发出的光线传导至拼接区域的扩散片上，从而使得导光构件将第一灯条和第二灯条的光线传导至拼接区域的扩散片，缓解了现有拼接区域存在的拼接暗线的问题；而连接壁将第一转换壁和第二转换壁连接起来，在第一转换壁和第二转换壁相对光源倾角较大时，可避免第一转换壁和第二转换壁滑动甚至倾倒，能避免第一转换壁和第二转换壁由于分离造成的滑动等问题。\n\n[0058]在一种实施例中，如图4所示，所述连接壁133包括第一连接壁1331和第二连接壁1332，所述第一连接壁1331与所述第二连接壁1332相对设置，在设置连接壁时，为避免连接壁影响到导光构件的工作，避免连接壁改变光线的传导，可使得第一连接壁和第二连接壁连接第一转换壁和第二转换壁，而在导光构件中，其上侧与下侧均镂空，使得光线直接从镂空处射出，而不会被连接壁影响。\n\n[0059]在一种实施例中，所述连接壁的纵截面形状为倒梯形，所述连接壁的宽度等于所述拼接区域的宽度；在第一转换壁、第二转换壁与连接壁一体设置时，使连接壁的宽度等于拼接区域的宽度，从而使得设置导光构件时，连接壁设置在拼接区域，同时第一转换壁和第二转换壁无需再次定位，连接壁与拼接区域对位完成后相当于将第一转换壁与第一灯条对位、第二转换壁与第二灯条对位，从而使得第一转换壁和第二转换壁传导光源的光线至拼接处，缓解拼接区域的拼接暗线；且连接壁与扩散片接触，可与第一转换壁和第二转换壁支撑导光构件，从而避免导光构件上方膜层压塌导光构件。\n\n[0060]在一种实施例中，所述导光构件的纵截面为空心倒梯形，所述导光构件的下底的宽度等于所述第一灯条中的最靠近拼接区域的发光单元的宽度、所述第一灯条中的最靠近拼接区域的发光单元与拼接区域的距离、拼接区域的宽度、第二灯条中的最靠近拼接区域的发光单元与拼接区域的距离、以及第二灯条中的最靠近拼接区域的发光单元的宽度的和；通过将导光构件设置在第一灯条的最靠近拼接区域的发光单元、第二灯条的最靠近拼接区域的发光单元上方，使得第一灯条发出的光线和第二灯条发出的光线从第一转换壁和第二转换壁的底面进入导光构件，然后通过第一转换壁和第二转换壁聚集到拼接区域。\n\n[0061]在一种实施例中，所述第一转换壁的出光面上设有凸透镜，所述第二转换壁的出光面上设有凸透镜，所述第一转换壁和第二转换壁的纵截面为平行四边形，则第一转换壁和第二转换壁的底面，即平行四边形的底边为入光面，第一转换壁和第二转换壁靠近拼接区域的侧面，即平行四边形的靠近拼接区域的侧边为出光面，使第一灯条和第二灯条最靠近拼接区域的发光单元发出的光直射至导光构件内，导光构件出光面上的凸透镜将光线聚集到拼接区域，从而缓解现有拼接区域存在的拼接暗线。\n\n[0062]在本发明实施例中，在光线仅从导光构件的底面进入时，即导光构件的底面为入光面，光线仅从导光构件的侧面射出时，即导光构件的靠近拼接处的侧面为出光面，光线会正常从入光面直射进入，然后通过导光构件的出光面射出，使得拼接处的光线强度增大，缓解拼接处的拼接暗线；\n\n[0063]在光线仅从导光构件的底面进入时，即导光构件的底面为入光面，光线从导光构件的侧面以及顶面射出时，即导光构件包括顶面的一出光面，以及靠近拼接处的侧面的出光面，在侧面的出光面上设置凸透镜，使得光线在射到侧面时，会被传导至拼接处，而通过导光构件的顶面射出的光线相当于光源正常显示时光线的照射路径，使得导光构件不对其产生影响，且光源发出的光传导至拼接处，使得对应光源上方的光线和传导至拼接处的光线的强度保持相近，从而使得在显示上缓解拼接暗线的问题；\n\n[0064]在光线从导光构件的底面和远离拼接处的侧面进入导光构件时，导光构件包括底面的一入光面和侧面的一入光面，而光线仅从导光构件靠近拼接处的侧面射出时，导光构件的侧面为出光面，光源的发光单元发出的光线经导光构件传导至拼接处，而光源中的其他发光单元发出的光线能散射到对应发光单元的上方，使得在显示时，上方设有导光构件的发光单元上方正常显示，同时缓解了拼接处的拼接暗线的问题；\n\n[0065]在光线从导光构件的底面和远离拼接处的侧面进入导光构件时，导光构件包括底面的一入光面和侧面的一入光面，而光线从导光构件的顶面和靠近拼接处的侧面射出时，导光构件包括顶面的一出光面和侧面的一出光面，在侧面的出光面上设置凸透镜，光线在进入导光构件后，光线从导光构件的顶面正常射出，而在光线照射到导光构件的侧面时，光线将传导至拼接处，从而使得对应光源的区域正常显示，且缓解了拼接处的拼接暗线。\n\n[0066]在一种实施例中，如图1所示，在远离所述拼接区域的区域，所述第一灯条121和第二灯条122上设有垫高柱17，在第一光源和第二光源远离拼接区域的区域，设置垫高柱可以保持导光构件形成的空间，使得导光构件稳定的传导光源发出的光线，缓解拼接区域的拼接暗线，且垫高柱的高度可以大于导光构件的高度，避免导光构件与扩散片接触出现磨损或者刮伤等问题，且垫高柱的高度为光源提供混光距离，使得光源发出的光能有一定的距离混光，从而使得整面的光线强度相近，而垫高柱不会增加背光模组的厚度，对背光模组的厚度不产生影响。\n\n[0067]在一种实施例中，所述垫高柱为透明材料，使垫高柱为透明材料，从而使得垫高柱不影响光源的正常出光，且垫高柱可为柔性材料，使得垫高柱不会刮伤膜层。\n\n[0068]在一种实施例中，在导光构件为倒梯形时，所述导光构件的上底面的宽度是连接板的下底面的宽度的1.5至2倍。\n\n[0069]在一种实施例中，所述第一转换壁的宽度范围包括0.3毫米至0.5毫米，可根据第一灯条中发光单元的设置确定第一导光构件的宽度，从而使得第一转换壁设置于所述第一灯条上，或者所述第一转换壁设置于所述第一灯条的出光方向上，从而使得第一灯条发出的光经导光构件传导至拼接处，使得拼接处的光线增强；或者可根据第二灯条中发光单元的设置确定导光构件的宽度，从而使得导光构件设置于所述第二灯条上，或者所述导光构件设置于所述第二灯条的出光方向上，从而使得第二灯条发出的光经导光构件传导至拼接区域，使得拼接区域的光线增强，从而缓解了拼接处的拼接暗线。\n\n[0070]在一种实施例中，所述导光构件与所述第一灯条之间的夹角范围为30度至60度，在该夹角范围时，导光构件入光效果较好，且导光构件较为稳定。\n\n[0071]在一种实施例中，所述导光构件与所述第二灯条之间的夹角范围为30度至60度，在该夹角范围时，导光构件入光效果较好，且导光构件较为稳定。\n\n[0072]在一种实施例中，所述导光构件的高度范围包括1毫米至3毫米。\n\n[0073]在一种实施例中，所述导光构件从拼接区域延伸至所述光源，所述导光构件与所述光源通过光学胶连接，将导光构件与光源通过光学胶连接，使得导光构件与光源接触良好，同时光学胶不影响光线的传导。\n\n[0074]在一种实施例中，所述导光构件与所述光学胶的折射率相近或者相同，使导光构件与光学胶的折射率相同，使得光源发出的光经过光学胶照射进导光构件为直射光，从而使得光线照射到出光面时，能够传导至拼接处，使得拼接处的光线强度增大，从而缓解拼接处的拼接暗线。\n\n[0075]在一种实施例中，在设置导光构件时，可使得导光构件延伸设置于光源中最靠近拼接处的发光单元上方，使得该发光单元发出的光直接从导光构件的底面进入导光构件，然后导光构件将光线传导至拼接处，缓解拼接处的拼接暗线，在设置导光构件时，不限定导光构件的宽度，根据发光单元的大小，以及实际时拼接处的光线大小确定导光构件设置在多少发光单元上，可设置在多个发光单元上方。\n\n[0076]在一种实施例中，考虑到光源的数量超过两个时，拼接处的形状以及个数会出现其他情况，可使导光板延伸设置在各个光源靠近拼接处的上方，从而使得各个拼接处正常发光，所述导光构件还可根据拼接处的形状设置为条状、环状以及不规则形状，以实际拼接处的形状以及数量确定导光板的数据、形状以及设置方式。\n\n[0077]如图5所示，本发明实施例提供一种显示装置，该显示装置包括：\n\n[0078]显示面板，包括第一基板21、第二基板23、以及设置于所述第一基板21与第二基板23之间的液晶层22；\n\n[0079]背光模组，设置于所述显示面板下方，包括背板11、光源12、导光构件13、扩散片14和棱镜片15，所述光源12包括拼接设置在所述背板上的第一灯条121和第二灯条122，所述导光构件13设置于所述拼接区域161，所述扩散片14设置于所述导光构件13上，用于使光均匀射出，所述棱镜片15设置于所述扩散片14上；其中，所述导光构件13用于将光源12无法传导至拼接区域161的扩散片14上的光线，传导至拼接区域161的扩散片14上。\n\n[0080]本发明实施例提供一种显示装置，该显示装置包括显示面板和背光模组，所述显示面板包括第一基板、第二基板、以及设置于所述第一基板与第二基板之间的液晶层，所述背光模组包括背板、光源、导光构件、扩散片和棱镜片，所述光源包括拼接设置在所述背板上的第一灯条和第二灯条，所述导光构件设置于所述拼接区域，所述扩散片设置于所述导光构件上，用于使光均匀射出，所述棱镜片设置于所述扩散片上，其中，所述导光构件用于将光源无法传导至拼接区域的扩散片上的光线，传导至拼接区域的扩散片上；通过在拼接区域设置导光构件，使得导光构件将光源无法传导至拼接区域的扩散片上的光线传导至拼接区域的扩散片上，从而使得拼接区域的扩散片上的光线的强度增强，使得拼接区域正常显示，缓解了现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题。\n\n[0081]根据以上实施例可知：\n\n[0082]本发明实施例提供一种背光模组和显示装置，该背光模组包括背板、光源、导光构件、扩散片和棱镜片，所述光源包括拼接设置在所述背板上的第一灯条和第二灯条，所述导光构件设置于所述拼接区域，所述扩散片设置于所述导光构件上，用于使光均匀射出，所述棱镜片设置于所述扩散片上，其中，所述导光构件用于将光源无法传导至拼接区域的扩散片上的光线，传导至拼接区域的扩散片上；通过在拼接区域设置导光构件，使得导光构件将光源无法传导至拼接区域的扩散片上的光线传导至拼接区域的扩散片上，从而使得拼接区域的扩散片上的光线的强度增强，使得拼接区域正常显示，缓解了现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题。\n\n[0083]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其是涉及一种背光模组和显示装置。\n\n背景技术\n\n[0002]现有miniLED作为直下式显示背光源，具有高亮度、高对比度、可实现局部显示、可实现窄边框等优势，被广泛应用，针对较大尺寸的显示器件，会拼接miniLED作为背光源，但对于拼接miniLED，在拼接处会存在较明显的拼接缝隙，在显示时，会出现拼接暗线，影响显示效果。\n\n[0003]所以，现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题。\n\n发明内容\n\n[0004]本发明提供一种背光模组和显示装置，用于解决现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题。\n\n[0005]为解决上述问题，本发明提供的技术方案如下：\n\n[0006]本发明提供一种背光模组，该背光模组包括：\n\n[0007]背板；\n\n[0008]光源，包括拼接设置在所述背板上的第一灯条和第二灯条；\n\n[0009]导光构件，设置于所述拼接区域；\n\n[0010]扩散片，设置于所述导光构件上，用于使光均匀射出；\n\n[0011]棱镜片，设置于所述扩散片上；\n\n[0012]其中，所述导光构件用于将光源无法传导至拼接区域的扩散片上的光线，传导至拼接区域的扩散片上。\n\n[0013]在本发明提供的背光模组中，所述导光构件的纵截面为实心平行四边形，所述导光构件从拼接区域延伸至所述第一灯条或者第二灯条上方，所述导光构件的纵截面与所述光源的纵截面形成锐角。\n\n[0014]在本发明提供的背光模组中，所述导光构件的纵截面为实心倒梯形，且所述导光构件从拼接区域分别延伸至所述第一灯条和第二灯条，所述导光构件的纵截面与所述光源的纵截面形成锐角。\n\n[0015]在本发明提供的背光模组中，所述第一灯条包括阵列设置的发光单元，所述第二灯条包括阵列设置的发光单元。\n\n[0016]在本发明提供的背光模组中，所述导光构件的下底的宽度小于等于所述第一灯条中的最靠近拼接区域的发光单元与拼接区域的距离、拼接区域的宽度、以及第二灯条中的最靠近拼接区域的发光单元与拼接区域的距离的和。\n\n[0017]在本发明提供的背光模组中，所述导光构件的纵截面为空心倒梯形，所述导光构件从拼接区域分别延伸至所述第一灯条和第二灯条，形成位于所述第一灯条上方的第一转换壁、位于所述第二灯条上方的第二转换壁、以及位于所述拼接区域上方的连接壁，所述导光构件的纵截面与所述光源的纵截面形成锐角。\n\n[0018]在本发明提供的背光模组中，所述第一转换壁的出光面上设有凸透镜，所述第二转换壁的出光面上设有凸透镜。\n\n[0019]在本发明提供的背光模组中，所述连接壁包括第一连接壁和第二连接壁，所述第一连接壁与所述第二连接壁相对设置。\n\n[0020]在本发明提供的背光模组中，所述连接壁的宽度等于所述拼接区域的宽度。\n\n[0021]同时，本发明提供一种显示装置，该显示装置包括：\n\n[0022]显示面板，包括第一基板、第二基板、以及位于所述第一基板和第二基板之间的液晶层；\n\n[0023]背光模组，设置于所述显示面板下方，包括背板、光源、导光构件、扩散片和棱镜片，所述光源包括拼接设置在所述背板上的第一灯条和第二灯条，所述导光构件设置于所述拼接区域，所述扩散片设置于所述导光构件上，用于使光均匀射出，所述棱镜片设置于所述扩散片上；其中，所述导光构件用于将光源无法传导至拼接区域的扩散片上的光线，传导至拼接区域的扩散片上。\n\n[0024]有益效果：本发明提供一种背光模组和显示装置，该背光模组包括背板、光源、导光构件、扩散片和棱镜片，所述光源包括拼接设置在所述背板上的第一灯条和第二灯条，所述导光构件设置于所述拼接区域，所述扩散片设置于所述导光构件上，用于使光均匀射出，所述棱镜片设置于所述扩散片上，其中，所述导光构件用于将光源无法传导至拼接区域的扩散片上的光线，传导至拼接区域的扩散片上；通过在拼接区域设置导光构件，使得导光构件将光源无法传导至拼接区域的扩散片上的光线传导至拼接区域的扩散片上，从而使得拼接区域的扩散片上的光线的强度增强，使得拼接区域正常显示，缓解了现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题。\n\n附图说明\n\n[0025]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0026]图1为本发明实施例提供的背光模组的第一示意图；\n\n[0027]图2为本发明实施例提供的背光模组的第二示意图；\n\n[0028]图3为本发明实施例提供的背光模组的第三示意图；\n\n[0029]图4为本发明实施例提供的背光模组的第四示意图；\n\n[0030]图5为本发明实施例提供的显示装置的示意图。\n\n具体实施方式\n\n[0031]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0032]本发明针对现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题，本发明实施例用以解决该问题。\n\n[0033]如图1所示，本发明实施例提供一种背光模组，该背光模组包括：\n\n[0034]背板11；\n\n[0035]光源12，包括拼接设置在所述背板11上的第一灯条121和第二灯条122；\n\n[0036]导光构件13，设置于所述拼接区域161；\n\n[0037]扩散片14，设置于所述导光构件13上，用于使光均匀射出；\n\n[0038]棱镜片15，设置于所述扩散片14上；\n\n[0039]其中，所述导光构件13用于将光源12无法传导至拼接区域161的扩散片14上的光线，传导至拼接区域161的扩散片14上。\n\n[0040]本发明实施例提供一种背光模组，该背光模组包括背板、光源、导光构件、扩散片和棱镜片，所述光源包括拼接设置在所述背板上的第一灯条和第二灯条，所述导光构件设置于所述拼接区域，所述扩散片设置于所述导光构件上，用于使光均匀射出，所述棱镜片设置于所述扩散片上，其中，所述导光构件用于将光源无法传导至拼接区域的扩散片上的光线，传导至拼接区域的扩散片上；通过在拼接区域设置导光构件，使得导光构件将光源无法传导至拼接区域的扩散片上的光线传导至拼接区域的扩散片上，从而使得拼接区域的扩散片上的光线的强度增强，使得拼接区域正常显示，缓解了现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题。\n\n[0041]需要说明的是，图1中所述背板11包括第一背板111和第二背板112，所述第一灯条121设置于所述第一背板111上，所述第二灯条122设置于所述第二背板112上。\n\n[0042]需要说明的是，第一灯条121与第二灯条122通过拼接构件拼接，图1中未示出拼接构件。\n\n[0043]在一种实施例中，所述导光构件的纵截面为实心平行四边形，所述导光构件从拼接区域延伸至所述第一灯条或者第二灯条上方，所述导光构件的纵截面与所述光源的纵截面形成锐角，如图2所示，导光构件13从拼接区域延伸至第二灯条122上，导光构件13的纵截面与所述第二灯条122的纵截面形成锐角A，在拼接区域，通过在拼接区域设置导光构件，并使所述导光构件延伸至第二灯条上方，使得导光构件将第二灯条发出的无法传导至拼接区域的光传导至拼接区域的扩散片上，使得拼接区域的扩散片上的光线增强，甚至使得拼接区域的光线强度与第二灯条上方的光线强度一致，从而缓解现有拼接区域存在拼接暗线的问题。\n\n[0044]在一种实施例中，所述导光构件从拼接区域延伸至第一灯条上，所述导光构件的纵截面与所述第一灯条的纵截面形成锐角，在拼接区域设置导光构件，并使导光构件延伸至第一灯条上，使得导光构件将第一灯条发出的无法传导至拼接区域的光传导至拼接区域，从而使得拼接区域的扩散片上的光线强度增大，甚至使得拼接区域的扩散片上的光线与第一灯条上方的扩散片上的光线的强度一致，从而缓解拼接暗线的问题；而针对第一灯条和第二灯条，可使导光构件向第一灯条或者第二灯条上延伸，从而使得导光构件将第一灯条和第二灯条上的光线传导至拼接区域的扩散片上，增强拼接区域的扩散片上的光线强度，缓解现有拼接区域的拼接暗线。\n\n[0045]在一种实施例中，所述导光构件的纵截面为实心平行四边形，所述导光构件的宽度大于所述第一灯条的最靠近拼接区域的发光单元与拼接区域的距离、与第一灯条的最靠近拼接区域的发光单元的宽度的和，通过使导光构件从拼接区域延伸至第一灯条，使得导光构件设置在第一灯条上方，从而使得第一灯条的光线从导光构件的底面进入，然后通过导光构件将光线聚集到拼接区域的扩散片上。\n\n[0046]在一种实施例中，所述导光构件的纵截面为实心平行四边形，所述导光构件的宽度大于所述第二灯条的最靠近拼接区域的发光单元与拼接区域的距离、与第二灯条的最靠近拼接区域的发光单元的宽度的和，通过使导光构件从拼接区域延伸至第二灯条，使得导光构件设置在第二灯条上方，从而使得第二灯条的光线从导光构件的底面进入，然后通过导光构件将光线聚集到拼接区域的扩散片上。\n\n[0047]在一种实施例中，所述导光构件包括入光面和出光面，所述出光面上设有凸透镜，对应导光构件的纵截面的平行四边形，将平行四边形的底边作为入光面，将平行四边形靠近拼接区域的侧边作为出光面，在出光面上设置凸透镜，使得直射进入导光构件的光线聚集到拼接区域。\n\n[0048]在一种实施例中，在导光构件单独设置于第一灯条或者第二灯条上时，导光构件从所述拼接处延伸至第一灯条或者第二灯条上，使得导光构件能够完整接收到光源的光，从而将靠近拼接区域的光传导至拼接区域，缓解拼接区域的拼接暗线。\n\n[0049]在一种实施例中，如图3所示，所述导光构件13的纵截面为实心倒梯形，且所述导光构件13从拼接区域分别延伸至所述第一灯条121和第二灯条122，所述导光构件的纵截面与所述光源的纵截面形成锐角，在导光构件从拼接区域向第一灯条和第二灯条延伸，使得导光构件通过将第一灯条和第二灯条无法传导至拼接区域的扩散片上的光传导至拼接区域的扩散片上，且由于导光构件将第一灯条和第二灯条的光线均传导至拼接区域，使得拼接区域的扩散片上的光线强度极大的增强，甚至使得拼接区域的扩散片上的光线强度与所述第一灯条和第二灯条上方的光线强度一致，从而缓解甚至解决现有拼接区域拼接暗线的问题。\n\n[0050]在一种实施例中，如图3所示，所述第一灯条121包括阵列设置的发光单元1211，所述第二灯条122包括阵列设置的发光单元1221。\n\n[0051]在一种实施例中，第一灯条和第二灯条可由多个发光单元组成，且第一灯条内的发光单元之间的间距相等，第二灯条内的发光单元的间距相等，第一灯条与第二灯条相同。\n\n[0052]在一种实施例中，所述发光单元包括miniLED，所述miniLED包括蓝光miniLED。\n\n[0053]在一种实施例中，如图3所示，所述导光构件的下底的宽度L等于所述第一灯条中最靠近拼接区域的发光单元与拼接区域的距离L12、拼接区域的宽度L6、以及第二灯条中的最靠近拼接区域的发光单元与拼接区域的距离L21的和；即L＝L12+L6+L21，通过将导光构件的下底的宽度设置为L12、L6和L21的和，且导光构件与光源之间的夹角为锐角，则第一灯条和第二灯条的光线必然会从导光构件的入光面，即实心倒梯形的腰进入导光构件，然后导光构件的入光面通过将第一灯条和第二灯条的最靠近拼接区域的一个发光单元发出的光线向拼接区域聚集，使得拼接区域的扩散片上的光线增强，从而缓解现有拼接区域存在的拼接暗线的问题。\n\n[0054]在一种实施例中，所述导光构件的下底大于拼接区域的宽度，且所述导光构件的下底的宽度小于所述第一灯条中的最靠近拼接区域的发光单元与拼接区域的距离、拼接区域的宽度、以及第二灯条中的最靠近拼接区域的发光单元与拼接区域的距离的和；从而使得光线能够从导光构件的侧面进入，使得光线向拼接区域聚集，使得拼接区域的扩散片上的光线增强，从而缓解现有拼接区域存在的拼接暗线的问题。\n\n[0055]在一种实施例中，如图3所示，所述导光构件13设置于所述第一灯条121中的发光单元1211的出光路径上，所述导光构件13包括入光面和出光面，即倒梯形的腰为入光面，与扩散片接触的上底为出光面，所述入光面上设有凸透镜；在导光构件为实体时，光线进入导光构件后将不会发生角度的变化，则在光线从导光构件的入光面进入时，导光构件上的凸透镜改变光线的方向，然后光线从拼接处射出，缓解拼接处的拼接暗线。\n\n[0056]在一种实施例中，如图3所示，图3中示出第一灯条中的最靠近拼接区域的发光单元的宽度L11、第二灯条中的最靠近拼接区域的发光单元的宽度L22，所述导光构件的下底的宽度L等于所述第一灯条中的最靠近拼接区域的发光单元的宽度L11、所述第一灯条中的最靠近拼接区域的发光单元与拼接区域的距离L12、拼接区域的宽度L6、第二灯条中的最靠近拼接区域的发光单元与拼接区域的距离L21、以及第二灯条中的最靠近拼接区域的发光单元的宽度L22的和；即L＝L11+L12+L6+L21+L22，使得导光构件的下底的宽度为L11、L12、L6、L21、L22的和，使得导光构件通过将第一灯条和第二灯条靠近拼接区域的倒数第二个发光单元的光线传导至拼接区域的扩散片上，且第一灯条和第二灯条上最靠近拼接区域的发光单元发出的光线可直接穿过导光构件，使得对应第一灯条最靠近拼接区域的发光单元的上方正常发光，在缓解现有拼接区域的拼接暗线的同时，使得第一灯条和第二灯条上方正常发光。\n\n[0057]在一种实施例中，如图1所示，所述导光构件的纵截面为空心倒梯形，所述导光构件13从拼接区域161分别延伸至所述第一灯条121和第二灯条122，形成位于所述第一灯条121上方的第一转换壁131、位于所述第二灯条122上方的第二转换壁132、以及位于所述拼接区域上方的连接壁133，所述导光构件的纵截面与所述光源的纵截面形成锐角，在拼接区域设置导光构件时，可使导光构件分别在第一灯条上形成第一转换壁，第一转换壁将第一灯条发出的光线传导至拼接区域的扩散片上，导光构件在第二灯条上形成第二转换壁，第二转换壁将第二灯条发出的光线传导至拼接区域的扩散片上，从而使得导光构件将第一灯条和第二灯条的光线传导至拼接区域的扩散片，缓解了现有拼接区域存在的拼接暗线的问题；而连接壁将第一转换壁和第二转换壁连接起来，在第一转换壁和第二转换壁相对光源倾角较大时，可避免第一转换壁和第二转换壁滑动甚至倾倒，能避免第一转换壁和第二转换壁由于分离造成的滑动等问题。\n\n[0058]在一种实施例中，如图4所示，所述连接壁133包括第一连接壁1331和第二连接壁1332，所述第一连接壁1331与所述第二连接壁1332相对设置，在设置连接壁时，为避免连接壁影响到导光构件的工作，避免连接壁改变光线的传导，可使得第一连接壁和第二连接壁连接第一转换壁和第二转换壁，而在导光构件中，其上侧与下侧均镂空，使得光线直接从镂空处射出，而不会被连接壁影响。\n\n[0059]在一种实施例中，所述连接壁的纵截面形状为倒梯形，所述连接壁的宽度等于所述拼接区域的宽度；在第一转换壁、第二转换壁与连接壁一体设置时，使连接壁的宽度等于拼接区域的宽度，从而使得设置导光构件时，连接壁设置在拼接区域，同时第一转换壁和第二转换壁无需再次定位，连接壁与拼接区域对位完成后相当于将第一转换壁与第一灯条对位、第二转换壁与第二灯条对位，从而使得第一转换壁和第二转换壁传导光源的光线至拼接处，缓解拼接区域的拼接暗线；且连接壁与扩散片接触，可与第一转换壁和第二转换壁支撑导光构件，从而避免导光构件上方膜层压塌导光构件。\n\n[0060]在一种实施例中，所述导光构件的纵截面为空心倒梯形，所述导光构件的下底的宽度等于所述第一灯条中的最靠近拼接区域的发光单元的宽度、所述第一灯条中的最靠近拼接区域的发光单元与拼接区域的距离、拼接区域的宽度、第二灯条中的最靠近拼接区域的发光单元与拼接区域的距离、以及第二灯条中的最靠近拼接区域的发光单元的宽度的和；通过将导光构件设置在第一灯条的最靠近拼接区域的发光单元、第二灯条的最靠近拼接区域的发光单元上方，使得第一灯条发出的光线和第二灯条发出的光线从第一转换壁和第二转换壁的底面进入导光构件，然后通过第一转换壁和第二转换壁聚集到拼接区域。\n\n[0061]在一种实施例中，所述第一转换壁的出光面上设有凸透镜，所述第二转换壁的出光面上设有凸透镜，所述第一转换壁和第二转换壁的纵截面为平行四边形，则第一转换壁和第二转换壁的底面，即平行四边形的底边为入光面，第一转换壁和第二转换壁靠近拼接区域的侧面，即平行四边形的靠近拼接区域的侧边为出光面，使第一灯条和第二灯条最靠近拼接区域的发光单元发出的光直射至导光构件内，导光构件出光面上的凸透镜将光线聚集到拼接区域，从而缓解现有拼接区域存在的拼接暗线。\n\n[0062]在本发明实施例中，在光线仅从导光构件的底面进入时，即导光构件的底面为入光面，光线仅从导光构件的侧面射出时，即导光构件的靠近拼接处的侧面为出光面，光线会正常从入光面直射进入，然后通过导光构件的出光面射出，使得拼接处的光线强度增大，缓解拼接处的拼接暗线；\n\n[0063]在光线仅从导光构件的底面进入时，即导光构件的底面为入光面，光线从导光构件的侧面以及顶面射出时，即导光构件包括顶面的一出光面，以及靠近拼接处的侧面的出光面，在侧面的出光面上设置凸透镜，使得光线在射到侧面时，会被传导至拼接处，而通过导光构件的顶面射出的光线相当于光源正常显示时光线的照射路径，使得导光构件不对其产生影响，且光源发出的光传导至拼接处，使得对应光源上方的光线和传导至拼接处的光线的强度保持相近，从而使得在显示上缓解拼接暗线的问题；\n\n[0064]在光线从导光构件的底面和远离拼接处的侧面进入导光构件时，导光构件包括底面的一入光面和侧面的一入光面，而光线仅从导光构件靠近拼接处的侧面射出时，导光构件的侧面为出光面，光源的发光单元发出的光线经导光构件传导至拼接处，而光源中的其他发光单元发出的光线能散射到对应发光单元的上方，使得在显示时，上方设有导光构件的发光单元上方正常显示，同时缓解了拼接处的拼接暗线的问题；\n\n[0065]在光线从导光构件的底面和远离拼接处的侧面进入导光构件时，导光构件包括底面的一入光面和侧面的一入光面，而光线从导光构件的顶面和靠近拼接处的侧面射出时，导光构件包括顶面的一出光面和侧面的一出光面，在侧面的出光面上设置凸透镜，光线在进入导光构件后，光线从导光构件的顶面正常射出，而在光线照射到导光构件的侧面时，光线将传导至拼接处，从而使得对应光源的区域正常显示，且缓解了拼接处的拼接暗线。\n\n[0066]在一种实施例中，如图1所示，在远离所述拼接区域的区域，所述第一灯条121和第二灯条122上设有垫高柱17，在第一光源和第二光源远离拼接区域的区域，设置垫高柱可以保持导光构件形成的空间，使得导光构件稳定的传导光源发出的光线，缓解拼接区域的拼接暗线，且垫高柱的高度可以大于导光构件的高度，避免导光构件与扩散片接触出现磨损或者刮伤等问题，且垫高柱的高度为光源提供混光距离，使得光源发出的光能有一定的距离混光，从而使得整面的光线强度相近，而垫高柱不会增加背光模组的厚度，对背光模组的厚度不产生影响。\n\n[0067]在一种实施例中，所述垫高柱为透明材料，使垫高柱为透明材料，从而使得垫高柱不影响光源的正常出光，且垫高柱可为柔性材料，使得垫高柱不会刮伤膜层。\n\n[0068]在一种实施例中，在导光构件为倒梯形时，所述导光构件的上底面的宽度是连接板的下底面的宽度的1.5至2倍。\n\n[0069]在一种实施例中，所述第一转换壁的宽度范围包括0.3毫米至0.5毫米，可根据第一灯条中发光单元的设置确定第一导光构件的宽度，从而使得第一转换壁设置于所述第一灯条上，或者所述第一转换壁设置于所述第一灯条的出光方向上，从而使得第一灯条发出的光经导光构件传导至拼接处，使得拼接处的光线增强；或者可根据第二灯条中发光单元的设置确定导光构件的宽度，从而使得导光构件设置于所述第二灯条上，或者所述导光构件设置于所述第二灯条的出光方向上，从而使得第二灯条发出的光经导光构件传导至拼接区域，使得拼接区域的光线增强，从而缓解了拼接处的拼接暗线。\n\n[0070]在一种实施例中，所述导光构件与所述第一灯条之间的夹角范围为30度至60度，在该夹角范围时，导光构件入光效果较好，且导光构件较为稳定。\n\n[0071]在一种实施例中，所述导光构件与所述第二灯条之间的夹角范围为30度至60度，在该夹角范围时，导光构件入光效果较好，且导光构件较为稳定。\n\n[0072]在一种实施例中，所述导光构件的高度范围包括1毫米至3毫米。\n\n[0073]在一种实施例中，所述导光构件从拼接区域延伸至所述光源，所述导光构件与所述光源通过光学胶连接，将导光构件与光源通过光学胶连接，使得导光构件与光源接触良好，同时光学胶不影响光线的传导。\n\n[0074]在一种实施例中，所述导光构件与所述光学胶的折射率相近或者相同，使导光构件与光学胶的折射率相同，使得光源发出的光经过光学胶照射进导光构件为直射光，从而使得光线照射到出光面时，能够传导至拼接处，使得拼接处的光线强度增大，从而缓解拼接处的拼接暗线。\n\n[0075]在一种实施例中，在设置导光构件时，可使得导光构件延伸设置于光源中最靠近拼接处的发光单元上方，使得该发光单元发出的光直接从导光构件的底面进入导光构件，然后导光构件将光线传导至拼接处，缓解拼接处的拼接暗线，在设置导光构件时，不限定导光构件的宽度，根据发光单元的大小，以及实际时拼接处的光线大小确定导光构件设置在多少发光单元上，可设置在多个发光单元上方。\n\n[0076]在一种实施例中，考虑到光源的数量超过两个时，拼接处的形状以及个数会出现其他情况，可使导光板延伸设置在各个光源靠近拼接处的上方，从而使得各个拼接处正常发光，所述导光构件还可根据拼接处的形状设置为条状、环状以及不规则形状，以实际拼接处的形状以及数量确定导光板的数据、形状以及设置方式。\n\n[0077]如图5所示，本发明实施例提供一种显示装置，该显示装置包括：\n\n[0078]显示面板，包括第一基板21、第二基板23、以及设置于所述第一基板21与第二基板23之间的液晶层22；\n\n[0079]背光模组，设置于所述显示面板下方，包括背板11、光源12、导光构件13、扩散片14和棱镜片15，所述光源12包括拼接设置在所述背板上的第一灯条121和第二灯条122，所述导光构件13设置于所述拼接区域161，所述扩散片14设置于所述导光构件13上，用于使光均匀射出，所述棱镜片15设置于所述扩散片14上；其中，所述导光构件13用于将光源12无法传导至拼接区域161的扩散片14上的光线，传导至拼接区域161的扩散片14上。\n\n[0080]本发明实施例提供一种显示装置，该显示装置包括显示面板和背光模组，所述显示面板包括第一基板、第二基板、以及设置于所述第一基板与第二基板之间的液晶层，所述背光模组包括背板、光源、导光构件、扩散片和棱镜片，所述光源包括拼接设置在所述背板上的第一灯条和第二灯条，所述导光构件设置于所述拼接区域，所述扩散片设置于所述导光构件上，用于使光均匀射出，所述棱镜片设置于所述扩散片上，其中，所述导光构件用于将光源无法传导至拼接区域的扩散片上的光线，传导至拼接区域的扩散片上；通过在拼接区域设置导光构件，使得导光构件将光源无法传导至拼接区域的扩散片上的光线传导至拼接区域的扩散片上，从而使得拼接区域的扩散片上的光线的强度增强，使得拼接区域正常显示，缓解了现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题。\n\n[0081]根据以上实施例可知：\n\n[0082]本发明实施例提供一种背光模组和显示装置，该背光模组包括背板、光源、导光构件、扩散片和棱镜片，所述光源包括拼接设置在所述背板上的第一灯条和第二灯条，所述导光构件设置于所述拼接区域，所述扩散片设置于所述导光构件上，用于使光均匀射出，所述棱镜片设置于所述扩散片上，其中，所述导光构件用于将光源无法传导至拼接区域的扩散片上的光线，传导至拼接区域的扩散片上；通过在拼接区域设置导光构件，使得导光构件将光源无法传导至拼接区域的扩散片上的光线传导至拼接区域的扩散片上，从而使得拼接区域的扩散片上的光线的强度增强，使得拼接区域正常显示，缓解了现有的采用拼接miniLED的显示器件存在拼接处存在拼接暗线的技术问题。\n\n[0083]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10705, 23759, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种发光基板、背光模组及显示面板。\n\n背景技术\n\n[0002]目前，Micro LED(Micro Light Emitting Display，微型有机发光二极管)作为一种电流驱动的器件，通常需要高性能的薄膜晶体管进行控制，因此，氧化物薄膜晶体管成为目前业界开发的首选目标。\n\n[0003]采用氧化物如IGZO或ITZO作为沟道层时，有利于设计高分辨率和高亮度的薄膜晶体管器件，但在高性能薄膜晶体管上搭载Micro LED时，Micro LED发出的光会散射/反射到薄膜晶体管基板上，这种内部光的反射严重影响了薄膜晶体管器件的性能和稳定性。\n\n发明内容\n\n[0004]本申请提供一种发光基板、背光模组及显示面板，提高了薄膜晶体管器件的性能和稳定性。\n\n[0005]本申请提供一种发光基板，其包括：\n\n[0006]阵列基板，所述阵列基板包括薄膜晶体管阵列层，所述薄膜晶体管阵列层包括用于驱动发光元件发光的薄膜晶体管；\n\n[0007]所述发光元件，所述发光元件设置在所述阵列基板上，且与所述薄膜晶体管电性连接；以及\n\n[0008]遮光单元，所述遮光单元与所述薄膜晶体管的有源层对应设置；其中，所述遮光单元于所述阵列基板所在平面的正投影至少覆盖所述薄膜晶体管的有源层于所述阵列基板所在平面的正投影。\n\n[0009]在本申请的发光基板中，所述遮光单元于所述阵列基板所在平面的正投影覆盖所述薄膜晶体管于所述阵列基板所在平面的正投影。\n\n[0010]在本申请的发光基板中，所述薄膜晶体管于所述阵列基板所在平面的正投影位于所述发光元件于所述阵列基板所在平面的正投影的外侧。\n\n[0011]在本申请的发光基板中，所述遮光单元设置在所述阵列基板上，且位于所述发光元件的外侧。\n\n[0012]在本申请的发光基板中，所述遮光单元设置在所述薄膜晶体管阵列层中。\n\n[0013]在本申请的发光基板中，所述薄膜晶体管于所述阵列基板所在平面的正投影位于所述发光元件于所述阵列基板所在平面的正投影内。\n\n[0014]在本申请的发光基板中，所述发光元件为Mini LED芯片或MicroLED芯片。\n\n[0015]本申请提供一种背光模组，其包括上述任一项所述的发光基板。\n\n[0016]本申请还提供一种显示面板，其包括：\n\n[0017]阵列基板，所述阵列基板包括薄膜晶体管阵列层，所述薄膜晶体管阵列层包括用于驱动发光元件发光的薄膜晶体管；\n\n[0018]所述发光元件，所述发光元件设置在所述阵列基板上，且与所述薄膜晶体管电性连接；以及\n\n[0019]遮光单元，所述遮光单元与所述薄膜晶体管的有源层对应设置；其中，所述遮光单元于所述阵列基板所在平面的正投影至少覆盖所述薄膜晶体管的有源层于所述阵列基板所在平面的正投影。\n\n[0020]在本申请的显示面板中，所述遮光单元于所述阵列基板所在平面的正投影覆盖所述薄膜晶体管于所述阵列基板所在平面的正投影。\n\n[0021]在本申请的显示面板中，所述发光元件为Micro LED芯片，多个所述MicroLED芯片阵列排布于所述阵列基板上。\n\n[0022]在本申请的显示面板中，所述发光元件包括第一发光元件、第二发光元件和第三发光元件，每个所述第一发光元件、所述第二发光元件及所述第三发光元件形成一个像素单元；\n\n[0023]所述阵列基板包括用于驱动所述像素单元显示发光的像素电路单元，所述像素电路单元包括所述薄膜晶体管；\n\n[0024]所述像素电路单元于所述阵列基板所在平面的正投影位于所述像素单元于所述阵列基板所在平面的正投影的外侧。\n\n[0025]本申请提供一种发光基板、背光模组及显示面板，通过将遮光单元与有源层对应设置，以遮光单元来遮蔽射向有源层的光，避免了光线对有源层造成损伤，从而提高了薄膜晶体管器件的性能和稳定性。\n\n附图说明\n\n[0026]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0027]图1是本申请第一实施例提供的发光基板的结构示意图；\n\n[0028]图2是本申请第二实施例提供的发光基板的结构示意图；\n\n[0029]图3是本申请第三实施例提供的发光基板的结构示意图；\n\n[0030]图4是本申请第四实施例提供的发光基板的结构示意图；\n\n[0031]图5是本申请实施例提供的背光模组的结构示意图；\n\n[0032]图6是本申请实施例提供的显示面板的结构示意图；\n\n[0033]图7是本申请实施例提供的显示面板中像素排布的结构示意图；\n\n[0034]图8是图7中像素单元的结构示意图。\n\n具体实施方式\n\n[0035]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0036]需要说明的是，本申请以下各实施例均以发光元件通过连通电极与薄膜晶体管电性连接为例进行说明，但并不限于此。\n\n[0037]请参阅图1，图1为本申请第一实施例提供的发光基板的结构示意图。本申请第一实施例提供的发光基板100包括阵列基板10、发光元件14和遮光单元15。阵列基板10包括薄膜晶体管阵列层12。薄膜晶体管阵列层12包括用于驱动发光元件14发光的薄膜晶体管13。发光元件14设置在阵列基板10上。发光元件14与薄膜晶体管13电性连接。遮光单元15与薄膜晶体管13的有源层132对应设置。遮光单元15于阵列基板10所在平面的正投影至少覆盖薄膜晶体管13的有源层132于阵列基板10所在平面的正投影。\n\n[0038]由此，本申请第一实施例提供的发光基板100通过遮光单元15来遮蔽射向有源层132的光，避免光线对有源层132造成损伤，从而提高了薄膜晶体管13的性能和稳定性。\n\n[0039]需要说明的是，阵列基板10还包括衬底基板11和连通电极126。衬底基板11位于薄膜晶体管阵列层12远离发光元件14的一侧。连通电极126设置在阵列基板10上，并用于电性连接薄膜晶体管13与发光元件14。另外，连通电极126的具体位置还可以根据实际情况进行设定，本申请对此不作限定。\n\n[0040]另外，在本申请第一实施例中，薄膜晶体管阵列层12还包括依次设置在衬底基板11上的缓冲层121、栅极绝缘层122、介电绝缘层123、平坦层124和保护层125。其中，薄膜晶体管13设置在栅极绝缘层122、介电绝缘层123和平坦层124中。\n\n[0041]可以理解的是，薄膜晶体管阵列层12的膜层结构以及薄膜晶体管13的具体位置还可以根据实际情况进行设定，在此不再赘述。\n\n[0042]需要说明的是，本申请第一实施例仅以薄膜晶体管13包括源极131、有源层132、栅极133和漏极134为例进行说明，但并不限于此。\n\n[0043]其中，发光元件14可以与漏极134电性连接。具体的，发光元件14通过连通电极126与漏极134电性连接。当然，在一些实施例中，发光元件14也可以与源极131电性连接，发光元件14与薄膜晶体管13的具体连接方式可以根据实际情况进行选择，本申请对此不作限定。\n\n[0044]可选的，发光元件14为一个或多个。薄膜晶体管13与发光元件14对应设置，每个薄膜晶体管13可以驱动一个或多个发光元件14发光。在本申请第一实施例中，发光元件14的数量为多个，多个发光元件14在阵列基板10上可以呈阵列排布，也可以为其他排布方式，在此不再赘述。\n\n[0045]具体的，发光元件14可以为LED芯片。可选的，发光元件14为Mini LED芯片或MicroLED芯片。其中，该Mini LED芯片的尺寸在100～200微米之间，MicroLED芯片的尺寸在100微米以下。另外，Mini LED芯片及MicroLED芯片的尺寸还可以根据实际情况进行选择，本申请对此不作限定。\n\n[0046]具体的，遮光单元15为BM(Black Matrix，黑色矩阵)，遮光单元15的材料可以为黑色油墨、铬等黑色金属或者其他具有遮光作用的材料。此外，遮光单元15可以是通过光刻、喷墨打印或丝网印刷等工艺形成。\n\n[0047]进一步的，遮光单元15于阵列基板10所在平面的正投影覆盖薄膜晶体管13于阵列基板10所在平面的正投影。具体的，沿平行于阵列基板10所在平面的方向上，遮光单元15可以与薄膜晶体管13的尺寸相同，也可以大于薄膜晶体管13的尺寸。另外，遮光单元15的具体尺寸还可以根据实际情况进行设定，在此不再赘述。\n\n[0048]上述设置通过将遮光单元15覆盖薄膜晶体管13，可以遮蔽射向整个薄膜晶体管13的光线。此外，将遮光单元15横向延伸至超出薄膜晶体管13所在的区域，还可以进一步起到封闭光的作用，防止光线从侧面射向薄膜晶体管13，有效地保护了有源层132不受损伤，进而提高了薄膜晶体管13的性能。\n\n[0049]在本申请第一实施例中，薄膜晶体管13于阵列基板10所在平面的正投影位于发光元件14于阵列基板10所在平面的正投影的外侧。当然，在一些实施例中，薄膜晶体管13于阵列基板10所在平面的正投影也可以与发光元件14于阵列基板10所在平面的正投影部分重叠，本实施例不能理解为对本申请的限制。\n\n[0050]进一步的，遮光单元15设置在阵列基板10上，且位于发光元件14的外侧。由于氧化物半导体在强光和紫外光照射下极不稳定，因此，光线进入薄膜晶体管13后，会对有源层132造成损伤，进而直接影响薄膜晶体管13器件的性能。本实施例通过在阵列基板10上覆盖有源层132的区域设置遮光单元15，不仅可以遮蔽发光元件14射向有源层132的光，还可以避免外界环境光对有源层132造成影响。\n\n[0051]本申请第一实施例中的发光基板100通过将遮光单元15与有源层132对应设置，并将遮光单元15设置在阵列基板10上，以遮光单元15来遮蔽射向有源层132的光。同时，通过将遮光单元15覆盖薄膜晶体管13所在的平面，还可以遮蔽射向整个薄膜晶体管13的光线，有效保护了有源层132不受损伤，从而提高了薄膜晶体管13的性能和稳定性。\n\n[0052]请参阅图2，图2为本申请第二实施例提供的发光基板的结构示意图。本申请第二实施例与第一实施例的不同之处在于：遮光单元15设置在薄膜晶体管阵列层12中。\n\n[0053]在本申请第二实施例中，遮光单元15位于保护层125中。另外，根据薄膜晶体管阵列层12的膜层结构以及薄膜晶体管13的具体位置，遮光单元15还可以位于其他膜层结构中，本实施例不能理解为对本申请的限制。\n\n[0054]本申请第二实施例中的发光基板100通过将遮光单元15与有源层132对应设置，并将遮光单元15设置在薄膜晶体管阵列层12中，以遮光单元15来遮蔽射向有源层132的光。同时，通过将遮光单元15覆盖薄膜晶体管13所在的平面，还可以遮蔽射向整个薄膜晶体管13的光线，有效保护了有源层132不受损伤，从而提高了薄膜晶体管13的性能和稳定性。\n\n[0055]请参阅图3，图3为本申请第三实施例提供的发光基板的结构示意图。本申请第三实施例与第一实施例的不同之处在于：遮光单元15包括第一遮光单元151和第二遮光单元152。第一遮光单元151设置在阵列基板10上，且位于发光元件14的外侧。第二遮光单元152设置在薄膜晶体管阵列层12中，并位于薄膜晶体管13的侧面。\n\n[0056]具体的，在垂直于阵列基板10所在平面的方向上，第二遮光单元152位于薄膜晶体管13远离发光元件14的一侧。当然，在一些实施例中，第二遮光单元152还可以位于薄膜晶体管13靠近发光元件14的一侧或者同时位于薄膜晶体管13的两侧，本申请对此不作限定。\n\n[0057]可选的，第二遮光单元152设置在薄膜晶体管13的介电绝缘层123和平坦层124中。当然，在一些实施例中，第二遮光单元152还可以同时贯穿于薄膜晶体管阵列层12中的其他膜层中，如栅极绝缘层122和/或保护层125等，进而可以起到进一步的遮光作用。\n\n[0058]可以理解的是，在实际工艺中，可以通过光刻工艺在薄膜晶体管阵列层12的相应膜层中形成匹配于第二遮光单元152的凹槽，并在凹槽中形成第二遮光单元152。\n\n[0059]上述设置通过在薄膜晶体管13的侧面设置第二遮光单元152，可以侧向封闭射入薄膜晶体管13的光，从而保护了有源层132不受损伤，提高了薄膜晶体管13器件的性能。\n\n[0060]进一步的，在一些实施例中，第二遮光单元152还可以围绕薄膜晶体管13的周侧形成一环状结构，从而完全遮蔽射向阵列基板10的光线，最大限度地防止有源层132受到损伤，以进一步提高薄膜晶体管13器件的性能。\n\n[0061]本申请第三实施例中的发光基板100通过将遮光单元15与有源层132对应设置，并将第一遮光单元151设置在阵列基板10上、第二遮光单元152设置在薄膜晶体管阵列层12中，通过利用第一遮光单元151及第二遮光单元152的共同作用来遮蔽射向有源层132的光，可以进一步降低光线对有源层132的损伤几率，对有源层132起到了良好的保护效果，从而提高了薄膜晶体管13的性能和稳定性。\n\n[0062]请参阅图4，图4为本申请第四实施例提供的发光基板的结构示意图。本申请第四实施例与第一实施例的不同之处在于：薄膜晶体管13于阵列基板10所在平面的正投影位于发光元件14于阵列基板10所在平面的正投影内。\n\n[0063]可以理解的是，在本申请第四实施例中，遮光单元15位于薄膜晶体管阵列层12中。\n\n[0064]具体的，遮光单元15位于保护层125中。另外，根据薄膜晶体管阵列层12的膜层结构以及薄膜晶体管13的具体位置，遮光单元15还可以位于其他膜层结构中，本实施例不能理解为对本申请的限制。\n\n[0065]由此，上述设置可以遮蔽发光元件14及外界环境直接射向薄膜晶体管13的光线，从而封闭了直接射入有源层132的光，避免了有源层132受到损伤。\n\n[0066]需要说明的是，在垂直于阵列基板10所在平面的方向上，还可以同时在薄膜晶体管13的侧面设置遮光单元15，具体设置方式及有益效果可以参见前述实施例的描述，在此不再赘述。\n\n[0067]本申请第四实施例中的发光基板100通过将遮光单元15与有源层132对应设置，并将遮光单元15设置在薄膜晶体管阵列层12中，以遮光单元15来遮蔽直接射入有源层132的光。同时，通过将遮光单元15覆盖薄膜晶体管13所在的平面，还可以遮蔽直接射向整个薄膜晶体管13的光线，有效保护了有源层132不受损伤，从而提高了薄膜晶体管13的性能和稳定性。\n\n[0068]请参阅图5，图5为本申请实施例提供的背光模组的结构示意图。本申请实施例提供的背光模组200包括前述任一实施例提及的发光基板100。\n\n[0069]需要说明的是，本申请实施例仅以第一实施例中提及的发光基板为例进行说明，但并不限于此。\n\n[0070]需要说明的是，阵列基板20还包括衬底基板21和连通电极226。衬底基板21位于薄膜晶体管阵列层22远离发光元件24的一侧。连通电极226设置在阵列基板20上，并用于电性连接薄膜晶体管23与发光元件24。另外，连通电极226的具体位置还可以根据实际情况进行设定，本申请对此不作限定。\n\n[0071]另外，在本申请实施例中，薄膜晶体管阵列层22还包括依次设置在衬底基板21上的缓冲层221、栅极绝缘层222、介电绝缘层223、平坦层224和保护层225。其中，薄膜晶体管23设置在栅极绝缘层222、介电绝缘层223和平坦层224中。\n\n[0072]可以理解的是，薄膜晶体管阵列层22的膜层结构以及薄膜晶体管23的具体位置还可以根据实际情况进行设定，在此不再赘述。\n\n[0073]需要说明的是，本申请实施例仅以薄膜晶体管23包括源极231、有源层232、栅极233和漏极234为例进行说明，但并不限于此。\n\n[0074]具体的，背光模组200还包括光学膜片26。光学膜片26包括扩散片以及反射片等(图中未标识)，在此不再赘述。\n\n[0075]可以理解的是，在一些具体的实施例中，应用于小尺寸的液晶显示器的背光模组时，可以在阵列排布的芯片上方设置掩膜版，然后通过喷墨打印或丝网印刷的工艺在相应的驱动区域制备获得遮光单元25。\n\n[0076]可选的，发光元件24为Mini LED芯片或MicroLED芯片，该Mini LED芯片或MicroLED芯片为发出单色光的芯片。\n\n[0077]可选的，背光模组200为直下式背光模组。当以阵列基板20为背板进行背光光源的驱动时，超强的背光亮度通常会增强发光元件24反射或散射至阵列基板20上的光线强度，进而加剧薄膜晶体管23性能的衰减速度。\n\n[0078]上述设置通过遮光单元25的遮光作用，可以有效遮蔽射向薄膜晶体管23的光线，从而提高了薄膜晶体管23的性能和稳定性，保证了背光光源的出光效果。另外，在进行局部调光的分区驱动时，遮光单元25的设置使得各分区之间的光线可以互相隔离，进而减小了背光分区之间光线的串扰。\n\n[0079]本申请实施例中的背光模组200通过将遮光单元25与有源层232对应设置，以遮光单元25来遮蔽射向有源层232的光，避免光线对有源层232造成损伤，从而提高了薄膜晶体管23的性能和稳定性，保证了背光光源的出光效果。\n\n[0080]请参阅图6，图6为本申请实施例提供的显示面板300的结构示意图。\n\n[0081]需要说明的是，本实施例仅以Micro LED显示面板为例进行说明，但不限于此。\n\n[0082]此外，本实施例仅以水平电极结构(图中未标识)的Micro LED芯片为例进行说明。当然，本实施例提供的显示面板300还可以应用于垂直电极结构的Micro LED芯片，本实施例不能理解为对本申请的限制。\n\n[0083]本申请实施例提供一种显示面板300，其包括阵列基板30、发光元件34、遮光单元35和盖板36。阵列基板30包括薄膜晶体管阵列层32。薄膜晶体管阵列层32包括用于驱动发光元件34发光的薄膜晶体管33。发光元件34设置在阵列基板30上。发光元件34与薄膜晶体管33电性连接。遮光单元35与薄膜晶体管33的有源层332对应设置。遮光单元35于阵列基板30所在平面的正投影至少覆盖有源层332于阵列基板30所在平面的正投影。\n\n[0084]具体的，盖板36位于发光元件34远离阵列基板30的一侧。盖板36可以为玻璃盖板。另外，阵列基板30与盖板36之间还可以设置有其他膜层，如用于保护发光元件34的保护膜，等等，在此不再赘述。\n\n[0085]由此，本申请实施例提供的显示面板300通过遮光单元35来遮蔽射向有源层332的光，避免光线对有源层332造成损伤，从而提高了薄膜晶体管33的性能和稳定性。\n\n[0086]需要说明的是，阵列基板30还包括衬底基板31和连通电极326。衬底基板31位于薄膜晶体管阵列层32远离发光元件34的一侧。连通电极326设置在阵列基板30上，并用于电性连接薄膜晶体管33与发光元件34。另外，连通电极326的具体位置还可以根据实际情况进行设定，本申请对此不作限定。\n\n[0087]另外，在本申请实施例中，薄膜晶体管阵列层32还包括依次设置在衬底基板31上的缓冲层321、栅极绝缘层322、介电绝缘层323、平坦层324和保护层325。其中，薄膜晶体管33设置在栅极绝缘层322、介电绝缘层323和平坦层324中。\n\n[0088]可以理解的是，薄膜晶体管阵列层32的膜层结构以及薄膜晶体管33的具体位置还可以根据实际情况进行设定，在此不再赘述。\n\n[0089]需要说明的是，本实施例仅以薄膜晶体管33包括源极331、有源层332、栅极333和漏极334为例进行说明，但并不限于此。\n\n[0090]进一步的，遮光单元35于阵列基板30所在平面的正投影覆盖薄膜晶体管33于阵列基板30所在平面的正投影。故而，该设置通过将遮光单元35覆盖薄膜晶体管33所在的平面，可以遮蔽射向整个薄膜晶体管33的光线，有效保护了有源层332不受损伤。\n\n[0091]具体的，发光元件34为多个Micro LED芯片。多个Micro LED芯片阵列排布于阵列基板30上。\n\n[0092]可以理解的是，在Micro LED显示面板的制备过程中，遮光单元35可以通过光刻工艺形成。具体的，在阵列基板30制备完成之后，可以通过光刻制程完成遮光单元35的制备，然后利用负载有Micro LED芯片的转移基板将Micro LED芯片转移至设置有遮光单元35的阵列基板30上。\n\n[0093]请继续参阅图7和图8，图7为本申请实施例提供的显示面板中像素排布的结构示意图，图8为图7中像素单元的结构示意图。\n\n[0094]如图8所示，发光元件34包括第一发光元件341、第二发光元件342和第三发光元件343，每个第一发光元件341、第二发光元件342及第三发光元件343形成一个像素单元34a。\n\n[0095]具体的，第一发光元件341、第二发光元件342和第三发光元件343分别为红色Micro LED芯片、绿色Micro LED芯片及蓝色Micro LED芯片，不同颜色的上述Micro LED芯片组成一个像素单元34a，并通过薄膜晶体管33的驱动而发光。\n\n[0096]在本申请实施例中，阵列基板30包括用于驱动像素单元34a显示发光的像素电路单元34b。像素电路单元34b包括薄膜晶体管33。像素电路单元34b于阵列基板30所在平面的正投影位于像素单元34a于阵列基板30所在平面的正投影的外侧。\n\n[0097]需要说明的是，像素电路单元34b还可以包括补偿电路等其他电路结构，本实施例不能理解为对本申请的限制。\n\n[0098]可选的，像素单元34a与像素电路单元34b呈田字型排布。当然，在其他实施例中，像素单元34a与像素电路单元34b也可以为矩阵式排布，本申请对此不作限定。\n\n[0099]本申请实施例中的显示面板300通过将遮光单元35与有源层332对应设置，以遮光单元35来遮蔽射向有源层332的光，避免光线对有源层332造成损伤，从而提高了薄膜晶体管33的性能和稳定性。\n\n[0100]以上对本申请实施方式提供了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施方式的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种发光基板、背光模组及显示面板。\n\n背景技术\n\n[0002]目前，Micro LED(Micro Light Emitting Display，微型有机发光二极管)作为一种电流驱动的器件，通常需要高性能的薄膜晶体管进行控制，因此，氧化物薄膜晶体管成为目前业界开发的首选目标。\n\n[0003]采用氧化物如IGZO或ITZO作为沟道层时，有利于设计高分辨率和高亮度的薄膜晶体管器件，但在高性能薄膜晶体管上搭载Micro LED时，Micro LED发出的光会散射/反射到薄膜晶体管基板上，这种内部光的反射严重影响了薄膜晶体管器件的性能和稳定性。\n\n发明内容\n\n[0004]本申请提供一种发光基板、背光模组及显示面板，提高了薄膜晶体管器件的性能和稳定性。\n\n[0005]本申请提供一种发光基板，其包括：\n\n[0006]阵列基板，所述阵列基板包括薄膜晶体管阵列层，所述薄膜晶体管阵列层包括用于驱动发光元件发光的薄膜晶体管；\n\n[0007]所述发光元件，所述发光元件设置在所述阵列基板上，且与所述薄膜晶体管电性连接；以及\n\n[0008]遮光单元，所述遮光单元与所述薄膜晶体管的有源层对应设置；其中，所述遮光单元于所述阵列基板所在平面的正投影至少覆盖所述薄膜晶体管的有源层于所述阵列基板所在平面的正投影。\n\n[0009]在本申请的发光基板中，所述遮光单元于所述阵列基板所在平面的正投影覆盖所述薄膜晶体管于所述阵列基板所在平面的正投影。\n\n[0010]在本申请的发光基板中，所述薄膜晶体管于所述阵列基板所在平面的正投影位于所述发光元件于所述阵列基板所在平面的正投影的外侧。\n\n[0011]在本申请的发光基板中，所述遮光单元设置在所述阵列基板上，且位于所述发光元件的外侧。\n\n[0012]在本申请的发光基板中，所述遮光单元设置在所述薄膜晶体管阵列层中。\n\n[0013]在本申请的发光基板中，所述薄膜晶体管于所述阵列基板所在平面的正投影位于所述发光元件于所述阵列基板所在平面的正投影内。\n\n[0014]在本申请的发光基板中，所述发光元件为Mini LED芯片或MicroLED芯片。\n\n[0015]本申请提供一种背光模组，其包括上述任一项所述的发光基板。\n\n[0016]本申请还提供一种显示面板，其包括：\n\n[0017]阵列基板，所述阵列基板包括薄膜晶体管阵列层，所述薄膜晶体管阵列层包括用于驱动发光元件发光的薄膜晶体管；\n\n[0018]所述发光元件，所述发光元件设置在所述阵列基板上，且与所述薄膜晶体管电性连接；以及\n\n[0019]遮光单元，所述遮光单元与所述薄膜晶体管的有源层对应设置；其中，所述遮光单元于所述阵列基板所在平面的正投影至少覆盖所述薄膜晶体管的有源层于所述阵列基板所在平面的正投影。\n\n[0020]在本申请的显示面板中，所述遮光单元于所述阵列基板所在平面的正投影覆盖所述薄膜晶体管于所述阵列基板所在平面的正投影。\n\n[0021]在本申请的显示面板中，所述发光元件为Micro LED芯片，多个所述MicroLED芯片阵列排布于所述阵列基板上。\n\n[0022]在本申请的显示面板中，所述发光元件包括第一发光元件、第二发光元件和第三发光元件，每个所述第一发光元件、所述第二发光元件及所述第三发光元件形成一个像素单元；\n\n[0023]所述阵列基板包括用于驱动所述像素单元显示发光的像素电路单元，所述像素电路单元包括所述薄膜晶体管；\n\n[0024]所述像素电路单元于所述阵列基板所在平面的正投影位于所述像素单元于所述阵列基板所在平面的正投影的外侧。\n\n[0025]本申请提供一种发光基板、背光模组及显示面板，通过将遮光单元与有源层对应设置，以遮光单元来遮蔽射向有源层的光，避免了光线对有源层造成损伤，从而提高了薄膜晶体管器件的性能和稳定性。\n\n附图说明\n\n[0026]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0027]图1是本申请第一实施例提供的发光基板的结构示意图；\n\n[0028]图2是本申请第二实施例提供的发光基板的结构示意图；\n\n[0029]图3是本申请第三实施例提供的发光基板的结构示意图；\n\n[0030]图4是本申请第四实施例提供的发光基板的结构示意图；\n\n[0031]图5是本申请实施例提供的背光模组的结构示意图；\n\n[0032]图6是本申请实施例提供的显示面板的结构示意图；\n\n[0033]图7是本申请实施例提供的显示面板中像素排布的结构示意图；\n\n[0034]图8是图7中像素单元的结构示意图。\n\n具体实施方式\n\n[0035]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0036]需要说明的是，本申请以下各实施例均以发光元件通过连通电极与薄膜晶体管电性连接为例进行说明，但并不限于此。\n\n[0037]请参阅图1，图1为本申请第一实施例提供的发光基板的结构示意图。本申请第一实施例提供的发光基板100包括阵列基板10、发光元件14和遮光单元15。阵列基板10包括薄膜晶体管阵列层12。薄膜晶体管阵列层12包括用于驱动发光元件14发光的薄膜晶体管13。发光元件14设置在阵列基板10上。发光元件14与薄膜晶体管13电性连接。遮光单元15与薄膜晶体管13的有源层132对应设置。遮光单元15于阵列基板10所在平面的正投影至少覆盖薄膜晶体管13的有源层132于阵列基板10所在平面的正投影。\n\n[0038]由此，本申请第一实施例提供的发光基板100通过遮光单元15来遮蔽射向有源层132的光，避免光线对有源层132造成损伤，从而提高了薄膜晶体管13的性能和稳定性。\n\n[0039]需要说明的是，阵列基板10还包括衬底基板11和连通电极126。衬底基板11位于薄膜晶体管阵列层12远离发光元件14的一侧。连通电极126设置在阵列基板10上，并用于电性连接薄膜晶体管13与发光元件14。另外，连通电极126的具体位置还可以根据实际情况进行设定，本申请对此不作限定。\n\n[0040]另外，在本申请第一实施例中，薄膜晶体管阵列层12还包括依次设置在衬底基板11上的缓冲层121、栅极绝缘层122、介电绝缘层123、平坦层124和保护层125。其中，薄膜晶体管13设置在栅极绝缘层122、介电绝缘层123和平坦层124中。\n\n[0041]可以理解的是，薄膜晶体管阵列层12的膜层结构以及薄膜晶体管13的具体位置还可以根据实际情况进行设定，在此不再赘述。\n\n[0042]需要说明的是，本申请第一实施例仅以薄膜晶体管13包括源极131、有源层132、栅极133和漏极134为例进行说明，但并不限于此。\n\n[0043]其中，发光元件14可以与漏极134电性连接。具体的，发光元件14通过连通电极126与漏极134电性连接。当然，在一些实施例中，发光元件14也可以与源极131电性连接，发光元件14与薄膜晶体管13的具体连接方式可以根据实际情况进行选择，本申请对此不作限定。\n\n[0044]可选的，发光元件14为一个或多个。薄膜晶体管13与发光元件14对应设置，每个薄膜晶体管13可以驱动一个或多个发光元件14发光。在本申请第一实施例中，发光元件14的数量为多个，多个发光元件14在阵列基板10上可以呈阵列排布，也可以为其他排布方式，在此不再赘述。\n\n[0045]具体的，发光元件14可以为LED芯片。可选的，发光元件14为Mini LED芯片或MicroLED芯片。其中，该Mini LED芯片的尺寸在100～200微米之间，MicroLED芯片的尺寸在100微米以下。另外，Mini LED芯片及MicroLED芯片的尺寸还可以根据实际情况进行选择，本申请对此不作限定。\n\n[0046]具体的，遮光单元15为BM(Black Matrix，黑色矩阵)，遮光单元15的材料可以为黑色油墨、铬等黑色金属或者其他具有遮光作用的材料。此外，遮光单元15可以是通过光刻、喷墨打印或丝网印刷等工艺形成。\n\n[0047]进一步的，遮光单元15于阵列基板10所在平面的正投影覆盖薄膜晶体管13于阵列基板10所在平面的正投影。具体的，沿平行于阵列基板10所在平面的方向上，遮光单元15可以与薄膜晶体管13的尺寸相同，也可以大于薄膜晶体管13的尺寸。另外，遮光单元15的具体尺寸还可以根据实际情况进行设定，在此不再赘述。\n\n[0048]上述设置通过将遮光单元15覆盖薄膜晶体管13，可以遮蔽射向整个薄膜晶体管13的光线。此外，将遮光单元15横向延伸至超出薄膜晶体管13所在的区域，还可以进一步起到封闭光的作用，防止光线从侧面射向薄膜晶体管13，有效地保护了有源层132不受损伤，进而提高了薄膜晶体管13的性能。\n\n[0049]在本申请第一实施例中，薄膜晶体管13于阵列基板10所在平面的正投影位于发光元件14于阵列基板10所在平面的正投影的外侧。当然，在一些实施例中，薄膜晶体管13于阵列基板10所在平面的正投影也可以与发光元件14于阵列基板10所在平面的正投影部分重叠，本实施例不能理解为对本申请的限制。\n\n[0050]进一步的，遮光单元15设置在阵列基板10上，且位于发光元件14的外侧。由于氧化物半导体在强光和紫外光照射下极不稳定，因此，光线进入薄膜晶体管13后，会对有源层132造成损伤，进而直接影响薄膜晶体管13器件的性能。本实施例通过在阵列基板10上覆盖有源层132的区域设置遮光单元15，不仅可以遮蔽发光元件14射向有源层132的光，还可以避免外界环境光对有源层132造成影响。\n\n[0051]本申请第一实施例中的发光基板100通过将遮光单元15与有源层132对应设置，并将遮光单元15设置在阵列基板10上，以遮光单元15来遮蔽射向有源层132的光。同时，通过将遮光单元15覆盖薄膜晶体管13所在的平面，还可以遮蔽射向整个薄膜晶体管13的光线，有效保护了有源层132不受损伤，从而提高了薄膜晶体管13的性能和稳定性。\n\n[0052]请参阅图2，图2为本申请第二实施例提供的发光基板的结构示意图。本申请第二实施例与第一实施例的不同之处在于：遮光单元15设置在薄膜晶体管阵列层12中。\n\n[0053]在本申请第二实施例中，遮光单元15位于保护层125中。另外，根据薄膜晶体管阵列层12的膜层结构以及薄膜晶体管13的具体位置，遮光单元15还可以位于其他膜层结构中，本实施例不能理解为对本申请的限制。\n\n[0054]本申请第二实施例中的发光基板100通过将遮光单元15与有源层132对应设置，并将遮光单元15设置在薄膜晶体管阵列层12中，以遮光单元15来遮蔽射向有源层132的光。同时，通过将遮光单元15覆盖薄膜晶体管13所在的平面，还可以遮蔽射向整个薄膜晶体管13的光线，有效保护了有源层132不受损伤，从而提高了薄膜晶体管13的性能和稳定性。\n\n[0055]请参阅图3，图3为本申请第三实施例提供的发光基板的结构示意图。本申请第三实施例与第一实施例的不同之处在于：遮光单元15包括第一遮光单元151和第二遮光单元152。第一遮光单元151设置在阵列基板10上，且位于发光元件14的外侧。第二遮光单元152设置在薄膜晶体管阵列层12中，并位于薄膜晶体管13的侧面。\n\n[0056]具体的，在垂直于阵列基板10所在平面的方向上，第二遮光单元152位于薄膜晶体管13远离发光元件14的一侧。当然，在一些实施例中，第二遮光单元152还可以位于薄膜晶体管13靠近发光元件14的一侧或者同时位于薄膜晶体管13的两侧，本申请对此不作限定。\n\n[0057]可选的，第二遮光单元152设置在薄膜晶体管13的介电绝缘层123和平坦层124中。当然，在一些实施例中，第二遮光单元152还可以同时贯穿于薄膜晶体管阵列层12中的其他膜层中，如栅极绝缘层122和/或保护层125等，进而可以起到进一步的遮光作用。\n\n[0058]可以理解的是，在实际工艺中，可以通过光刻工艺在薄膜晶体管阵列层12的相应膜层中形成匹配于第二遮光单元152的凹槽，并在凹槽中形成第二遮光单元152。\n\n[0059]上述设置通过在薄膜晶体管13的侧面设置第二遮光单元152，可以侧向封闭射入薄膜晶体管13的光，从而保护了有源层132不受损伤，提高了薄膜晶体管13器件的性能。\n\n[0060]进一步的，在一些实施例中，第二遮光单元152还可以围绕薄膜晶体管13的周侧形成一环状结构，从而完全遮蔽射向阵列基板10的光线，最大限度地防止有源层132受到损伤，以进一步提高薄膜晶体管13器件的性能。\n\n[0061]本申请第三实施例中的发光基板100通过将遮光单元15与有源层132对应设置，并将第一遮光单元151设置在阵列基板10上、第二遮光单元152设置在薄膜晶体管阵列层12中，通过利用第一遮光单元151及第二遮光单元152的共同作用来遮蔽射向有源层132的光，可以进一步降低光线对有源层132的损伤几率，对有源层132起到了良好的保护效果，从而提高了薄膜晶体管13的性能和稳定性。\n\n[0062]请参阅图4，图4为本申请第四实施例提供的发光基板的结构示意图。本申请第四实施例与第一实施例的不同之处在于：薄膜晶体管13于阵列基板10所在平面的正投影位于发光元件14于阵列基板10所在平面的正投影内。\n\n[0063]可以理解的是，在本申请第四实施例中，遮光单元15位于薄膜晶体管阵列层12中。\n\n[0064]具体的，遮光单元15位于保护层125中。另外，根据薄膜晶体管阵列层12的膜层结构以及薄膜晶体管13的具体位置，遮光单元15还可以位于其他膜层结构中，本实施例不能理解为对本申请的限制。\n\n[0065]由此，上述设置可以遮蔽发光元件14及外界环境直接射向薄膜晶体管13的光线，从而封闭了直接射入有源层132的光，避免了有源层132受到损伤。\n\n[0066]需要说明的是，在垂直于阵列基板10所在平面的方向上，还可以同时在薄膜晶体管13的侧面设置遮光单元15，具体设置方式及有益效果可以参见前述实施例的描述，在此不再赘述。\n\n[0067]本申请第四实施例中的发光基板100通过将遮光单元15与有源层132对应设置，并将遮光单元15设置在薄膜晶体管阵列层12中，以遮光单元15来遮蔽直接射入有源层132的光。同时，通过将遮光单元15覆盖薄膜晶体管13所在的平面，还可以遮蔽直接射向整个薄膜晶体管13的光线，有效保护了有源层132不受损伤，从而提高了薄膜晶体管13的性能和稳定性。\n\n[0068]请参阅图5，图5为本申请实施例提供的背光模组的结构示意图。本申请实施例提供的背光模组200包括前述任一实施例提及的发光基板100。\n\n[0069]需要说明的是，本申请实施例仅以第一实施例中提及的发光基板为例进行说明，但并不限于此。\n\n[0070]需要说明的是，阵列基板20还包括衬底基板21和连通电极226。衬底基板21位于薄膜晶体管阵列层22远离发光元件24的一侧。连通电极226设置在阵列基板20上，并用于电性连接薄膜晶体管23与发光元件24。另外，连通电极226的具体位置还可以根据实际情况进行设定，本申请对此不作限定。\n\n[0071]另外，在本申请实施例中，薄膜晶体管阵列层22还包括依次设置在衬底基板21上的缓冲层221、栅极绝缘层222、介电绝缘层223、平坦层224和保护层225。其中，薄膜晶体管23设置在栅极绝缘层222、介电绝缘层223和平坦层224中。\n\n[0072]可以理解的是，薄膜晶体管阵列层22的膜层结构以及薄膜晶体管23的具体位置还可以根据实际情况进行设定，在此不再赘述。\n\n[0073]需要说明的是，本申请实施例仅以薄膜晶体管23包括源极231、有源层232、栅极233和漏极234为例进行说明，但并不限于此。\n\n[0074]具体的，背光模组200还包括光学膜片26。光学膜片26包括扩散片以及反射片等(图中未标识)，在此不再赘述。\n\n[0075]可以理解的是，在一些具体的实施例中，应用于小尺寸的液晶显示器的背光模组时，可以在阵列排布的芯片上方设置掩膜版，然后通过喷墨打印或丝网印刷的工艺在相应的驱动区域制备获得遮光单元25。\n\n[0076]可选的，发光元件24为Mini LED芯片或MicroLED芯片，该Mini LED芯片或MicroLED芯片为发出单色光的芯片。\n\n[0077]可选的，背光模组200为直下式背光模组。当以阵列基板20为背板进行背光光源的驱动时，超强的背光亮度通常会增强发光元件24反射或散射至阵列基板20上的光线强度，进而加剧薄膜晶体管23性能的衰减速度。\n\n[0078]上述设置通过遮光单元25的遮光作用，可以有效遮蔽射向薄膜晶体管23的光线，从而提高了薄膜晶体管23的性能和稳定性，保证了背光光源的出光效果。另外，在进行局部调光的分区驱动时，遮光单元25的设置使得各分区之间的光线可以互相隔离，进而减小了背光分区之间光线的串扰。\n\n[0079]本申请实施例中的背光模组200通过将遮光单元25与有源层232对应设置，以遮光单元25来遮蔽射向有源层232的光，避免光线对有源层232造成损伤，从而提高了薄膜晶体管23的性能和稳定性，保证了背光光源的出光效果。\n\n[0080]请参阅图6，图6为本申请实施例提供的显示面板300的结构示意图。\n\n[0081]需要说明的是，本实施例仅以Micro LED显示面板为例进行说明，但不限于此。\n\n[0082]此外，本实施例仅以水平电极结构(图中未标识)的Micro LED芯片为例进行说明。当然，本实施例提供的显示面板300还可以应用于垂直电极结构的Micro LED芯片，本实施例不能理解为对本申请的限制。\n\n[0083]本申请实施例提供一种显示面板300，其包括阵列基板30、发光元件34、遮光单元35和盖板36。阵列基板30包括薄膜晶体管阵列层32。薄膜晶体管阵列层32包括用于驱动发光元件34发光的薄膜晶体管33。发光元件34设置在阵列基板30上。发光元件34与薄膜晶体管33电性连接。遮光单元35与薄膜晶体管33的有源层332对应设置。遮光单元35于阵列基板30所在平面的正投影至少覆盖有源层332于阵列基板30所在平面的正投影。\n\n[0084]具体的，盖板36位于发光元件34远离阵列基板30的一侧。盖板36可以为玻璃盖板。另外，阵列基板30与盖板36之间还可以设置有其他膜层，如用于保护发光元件34的保护膜，等等，在此不再赘述。\n\n[0085]由此，本申请实施例提供的显示面板300通过遮光单元35来遮蔽射向有源层332的光，避免光线对有源层332造成损伤，从而提高了薄膜晶体管33的性能和稳定性。\n\n[0086]需要说明的是，阵列基板30还包括衬底基板31和连通电极326。衬底基板31位于薄膜晶体管阵列层32远离发光元件34的一侧。连通电极326设置在阵列基板30上，并用于电性连接薄膜晶体管33与发光元件34。另外，连通电极326的具体位置还可以根据实际情况进行设定，本申请对此不作限定。\n\n[0087]另外，在本申请实施例中，薄膜晶体管阵列层32还包括依次设置在衬底基板31上的缓冲层321、栅极绝缘层322、介电绝缘层323、平坦层324和保护层325。其中，薄膜晶体管33设置在栅极绝缘层322、介电绝缘层323和平坦层324中。\n\n[0088]可以理解的是，薄膜晶体管阵列层32的膜层结构以及薄膜晶体管33的具体位置还可以根据实际情况进行设定，在此不再赘述。\n\n[0089]需要说明的是，本实施例仅以薄膜晶体管33包括源极331、有源层332、栅极333和漏极334为例进行说明，但并不限于此。\n\n[0090]进一步的，遮光单元35于阵列基板30所在平面的正投影覆盖薄膜晶体管33于阵列基板30所在平面的正投影。故而，该设置通过将遮光单元35覆盖薄膜晶体管33所在的平面，可以遮蔽射向整个薄膜晶体管33的光线，有效保护了有源层332不受损伤。\n\n[0091]具体的，发光元件34为多个Micro LED芯片。多个Micro LED芯片阵列排布于阵列基板30上。\n\n[0092]可以理解的是，在Micro LED显示面板的制备过程中，遮光单元35可以通过光刻工艺形成。具体的，在阵列基板30制备完成之后，可以通过光刻制程完成遮光单元35的制备，然后利用负载有Micro LED芯片的转移基板将Micro LED芯片转移至设置有遮光单元35的阵列基板30上。\n\n[0093]请继续参阅图7和图8，图7为本申请实施例提供的显示面板中像素排布的结构示意图，图8为图7中像素单元的结构示意图。\n\n[0094]如图8所示，发光元件34包括第一发光元件341、第二发光元件342和第三发光元件343，每个第一发光元件341、第二发光元件342及第三发光元件343形成一个像素单元34a。\n\n[0095]具体的，第一发光元件341、第二发光元件342和第三发光元件343分别为红色Micro LED芯片、绿色Micro LED芯片及蓝色Micro LED芯片，不同颜色的上述Micro LED芯片组成一个像素单元34a，并通过薄膜晶体管33的驱动而发光。\n\n[0096]在本申请实施例中，阵列基板30包括用于驱动像素单元34a显示发光的像素电路单元34b。像素电路单元34b包括薄膜晶体管33。像素电路单元34b于阵列基板30所在平面的正投影位于像素单元34a于阵列基板30所在平面的正投影的外侧。\n\n[0097]需要说明的是，像素电路单元34b还可以包括补偿电路等其他电路结构，本实施例不能理解为对本申请的限制。\n\n[0098]可选的，像素单元34a与像素电路单元34b呈田字型排布。当然，在其他实施例中，像素单元34a与像素电路单元34b也可以为矩阵式排布，本申请对此不作限定。\n\n[0099]本申请实施例中的显示面板300通过将遮光单元35与有源层332对应设置，以遮光单元35来遮蔽射向有源层332的光，避免光线对有源层332造成损伤，从而提高了薄膜晶体管33的性能和稳定性。\n\n[0100]以上对本申请实施方式提供了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施方式的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10706, 23760, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种像素驱动电路及显示装置。\n\n背景技术\n\n[0002]微发光二极管显示装置(Micro Light Emitting Diode Display,Micro-LED)，是一种高密度集成的LED阵列显示装置，相较于液晶显示装置(Liquid Crystal Display,LCD)技术以及有机发光二极管(Organic Light-Emitting Diode,OLED)显示装置技术，Micro-LED具有更高的发光效率和更低的功耗，并且具有寿命长、响应快等优势。\n\n[0003]传统的3T1C像素驱动电路已广泛应用于OLED显示中，对于驱动晶体管来说，通过驱动晶体管的电流大小决定着OLED或者Micro-LED的发光亮度，而电流的大小与驱动晶体管栅极和源极的电压差Vgs有关，电压差大小的不同从而产生不同的灰阶显示。由于Micro-LED相比于OLED具有更高的发光效率和亮度，对于驱动晶体管来说，电压差的变化范围比较小就能实现较高的亮度，因此高低灰阶切换电压差的变化范围很小，这需要数据信号具有更高的精度。\n\n[0004]综上所述，现有Micro-LED显示装置的像素驱动电路存在高低灰阶切换能力较弱的问题。故，有必要提供一种像素驱动电路及显示装置来改善这一缺陷。\n\n发明内容\n\n[0005]本揭示实施例提供一种像素驱动电路及显示装置，用于解决Micro-LED显示装置的像素驱动电路存在高低灰阶切换能力较弱的问题。\n\n[0006]本揭示实施例提供一种像素驱动电路，包括数据写入单元、驱动单元、补偿单元和发光单元；\n\n[0007]所述数据写入单元用于接收数据电压信号和第一扫描信号，并与所述驱动单元耦接于第一节点；\n\n[0008]所述驱动单元用于接收电源高压信号，并与所述补偿单元耦接于第二节点；\n\n[0009]所述发光单元用于接收发光信号和电源低压信号，并与所述驱动单元耦接于第三节点；\n\n[0010]其中，所述驱动单元包括第一电容，所述第一电容的第一端用于接收所述电源高压信号，所述第一电容的第二端耦接所述第二节点，所述发光单元包括第一薄膜晶体管和微发光二极管，所述第一薄膜晶体管的栅极用于接收所述发光信号，所述第一薄膜晶体管的源极耦接所述第三节点，所述第一薄膜晶体管的漏极耦接所述微发光二极管的第一端。\n\n[0011]根据本揭示一实施例，所述数据写入单元包括第二薄膜晶体管，所述第二薄膜晶体管的栅极用于接收所述第一扫描信号，所述第二薄膜晶体管的源极用于接收所述数据电压信号，所述第二薄膜晶体管的漏极耦接所述第一节点。\n\n[0012]根据本揭示一实施例，所述驱动单元还包括第三薄膜晶体管和储存电容，所述第三薄膜晶体管的栅极耦接所述第一节点，所述第三薄膜晶体管的源极用于接收所述电源高压信号，所述第三薄膜晶体管的漏极耦接所述第三节点，所述储存电容的第一端耦接所述第一节点，所述储存电容的第二端耦接所述第二节点。\n\n[0013]根据本揭示一实施例，所述补偿单元用于接收第二扫描信号和耦接感测电路，所述感测电路用于产生感测电压信号，通过所述补偿单元传输至所述第三薄膜晶体管，用于感测所述第三薄膜晶体管的阈值电压，并对所述阈值电压进行补偿。\n\n[0014]根据本揭示一实施例，所述补偿单元包括第四薄膜晶体管，所述第四薄膜晶体管的栅极用于接收所述第二扫描信号，所述第四薄膜晶体管的源极耦接所述感测电路，所述第四薄膜晶体管的漏极耦接所述第二节点。\n\n[0015]根据本揭示一实施例，所述第一薄膜晶体管、所述第二薄膜晶体管、所述第三薄膜晶体管和所述第四薄膜晶体管均为N型晶体管。\n\n[0016]根据本揭示一实施例，所述像素驱动电路的驱动时序包括第一阶段、第二阶段和第三阶段；\n\n[0017]其中，在所述第一阶段内，通过所述第一扫描信号和所述第二扫描信号分别开启所述第二薄膜晶体管和所述第四薄膜晶体管，并写入所述数据电压信号和所述感测电压信号；\n\n[0018]在所述第二阶段内，通过所述第一扫描信号和所述第二扫描信号分别关闭所述第二薄膜晶体管和所述第四薄膜晶体管，所述驱动单元发生电容耦合效应；\n\n[0019]在所述第三阶段内，开启所述第三薄膜晶体管，并通过所述发光信号开启所述第一薄膜晶体管，所述驱动单元产生驱动电流驱动所述微发光二极管发光。\n\n[0020]根据本揭示一实施例，在所述第一阶段内，所述第一扫描信号、所述第二扫描信号、所述数据电压信号以及所述感测电压信号均为高电平信号，所述发光信号为低电平信号；\n\n[0021]在所述第二阶段内，所述第一扫描信号、所述第二扫描信号和所述发光信号均为低电平信号，所述数据电压信号包括高电平信号和低电平信号，所述感测电压信号包括高电平信号和低电平信号；\n\n[0022]在所述第三阶段内，所述第一扫描信号、所述第二扫描信号、所述数据电压信号以及所述感测电压信号均为低电平信号，所述发光信号为高电平信号。\n\n[0023]根据本揭示一实施例，所述数据电压信号的时序与所述感测电压信号的时序相同，所述第一扫描信号的时序与所述第二扫描信号的时序相同。\n\n[0024]本揭示实施例还提供一种显示装置，包括如上述的像素驱动电路。\n\n[0025]本揭示实施例的有益效果：本揭示实施例提供一种像素驱动电路，包括数据写入单元、驱动单元、补偿单元和发光单元，通过在驱动单元增加第一电容，所述第一电容的第一端用于接收所述电源高压信号，所述第一电容的第二端耦接所述第二节点，通过第一电容对驱动单元的耦合作用，减小在不同灰阶状态下驱动单元的数据传输效率，通过较低的数据传输效率实现高低灰阶的切换，从而提高像素驱动电路高低灰阶的切换能力，同时在发光单元的微发光二极管与驱动单元之间增设第一薄膜晶体管，所述第一薄膜晶体管的栅极耦接发光信号，漏极耦接微发光二极管的第一端，保证微发光二极管在发光之前不会受到驱动单元电流波动的影响，提高显示装置的显示效果。\n\n附图说明\n\n[0026]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是揭示的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0027]图1为本揭示实施例提供的像素驱动电路的框架示意图；\n\n[0028]图2为本揭示实施例提供的像素驱动电路的结构示意图；\n\n[0029]图3为本揭示实施例提供的像素驱动电路的时序图；\n\n[0030]图4为本揭示实施例提供的像素驱动电路的检测数据图。\n\n具体实施方式\n\n[0031]以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。\n\n[0032]下面结合附图和具体实施例对本揭示做进一步的说明：\n\n[0033]本揭示实施例提供一种像素驱动电路，下面结合图1至图3进行详细说明。\n\n[0034]如图1所示，图1为本揭示实施例提供的像素驱动电路的框架示意图，所述像素驱动电路包括数据写入单元110、驱动单元120、补偿单元130和发光单元140。所述数据写入单元110用于接收数据电压信号Vdata和第一扫描信号WR，并与所述驱动单元120耦接于第一节点A，所述驱动单元120用于接收电源高压信号VDD，并与所述补偿单元130耦接于第二节点B，所述补偿单元130用于接收第二扫描信号RD，并耦接感测电路Sense，所述发光单元140用于接收发光信号EM和电源低压信号VSS，并与所述驱动单元120耦接于第三节点C。\n\n[0035]如图2所示，在本实施例中，所述驱动单元120包括第一电容C1，所述第一电容C1的第一端用于接收所述电源高压信号VDD，所述第一电容C1的第二端耦接所述第二节点B，所述发光单元140包括第一薄膜晶体管T1和微发光二极管141，所述第一薄膜晶体管T1的栅极用于接收所述发光信号EM，所述第一薄膜晶体管T1的源极耦接所述第三节点C，所述第一薄膜晶体管T1的漏极耦接所述微发光二极管141的第一端,所述微发光二极管141的第二端用于接收所述电源低压信号VSS。\n\n[0036]在本实施例中，所述数据写入单元110包括第二薄膜晶体管T2，所述第二薄膜晶体管T2的栅极用于接收所述第一扫描信号WR，所述第二薄膜晶体管T2的源极用于接收所述数据电压信号Vdata，所述第二薄膜晶体管T2的漏极耦接所述第一节点A。\n\n[0037]在本实施例中，所述驱动单元120还包括第三薄膜晶体管T3和储存电容Cst，所述第三薄膜晶体管T3的栅极耦接所述第一节点A，所述第三薄膜晶体管T3的源极用于接收所述电源高压信号VDD，所述第三薄膜晶体管T3的漏极耦接所述第三节点C，所述储存电容Cst的第一端耦接所述第一节点A，所述储存电容Cst的第二端耦接所述第二节点B。\n\n[0038]如图2所示，所述补偿单元130用于接收第二扫描信号RD和耦接感测电路Sense，所述感测电路产生感测电压信号Vini，通过所述补偿单元130传输至第三薄膜晶体管T3，用于感测所述第三薄膜晶体管T3的阈值电压，并对所述阈值电压进行补偿。\n\n[0039]具体的，所述补偿单元130包括第四薄膜晶体管T4，所述第四薄膜晶体管T4的栅极耦接所述第二扫描信号RD，所述第四薄膜晶体管T4的源极耦接所述感测电路Sense，所述第四薄膜晶体管T4的漏极耦接所述第二节点B。\n\n[0040]优选的，所述第一薄膜晶体管T1、所述第二薄膜晶体管T2、所述第三薄膜晶体管T3和所述第四薄膜晶体管T4均为N型晶体管。\n\n[0041]如图3所示，图3为本揭示实施例所提供的像素驱动电路的时序图，所述像素驱动电路的驱动时序包括第一阶段、第二阶段和第三阶段。其中，在所述第一阶段内，通过所述第一扫描信号WR和所述第二扫描信号RD分别开启所述第二薄膜晶体管T2和所述第四薄膜晶体管T4，并写入所述数据电压信号Vdata和所述感测电压信号Vini；在所述第二阶段内，通过所述第一扫描信号WR和所述第二扫描信号RD分别关闭所述第二薄膜晶体管T2和所述第四薄膜晶体管T4，所述驱动单元120发生电容耦合效应，此时，由于储存电容Cst和第一电容C1的电容耦合效应，第三薄膜晶体管T3栅极和源极的电压差Vgs逐渐升高接近稳定值；在所述第三阶段内，所述第三薄膜晶体管T3的Vgs升高至稳定值，开启所述第三薄膜晶体管T3，并通过所述发光信号EM开启所述第一薄膜晶体管T1，所述驱动单元120产生驱动电流驱动所述发光单元140内的微发光二极管141发光。\n\n[0042]在本实施例中，在所述第一阶段内，所述第一扫描信号WR、所述第二扫描信号RD、所述数据电压信号Vdata以及所述感测电路Sense的感测电压信号Vini均为高电平信号，所述发光信号EM为低电平信号。此时，第二薄膜晶体管T2打开，向第三薄膜晶体管T3的栅极输入数据电压信号Vdata，第四薄膜晶体管T4打开，向所述第三薄膜晶体管T3输入感测电压信号Vini，同时分别向储存电容Cst和第一电容C1充电。\n\n[0043]在本实施例中，在所述第二阶段内，所述第一扫描信号WR、所述第二扫描信号RD和所述发光信号EM均为低电平信号，所述数据电压信号Vdata包括高电平信号和低电平信号，所述感测电压信号Vini包括高电平信号和低电平信号。具体地，所述数据电压信号Vdata在所述第二阶段内先保持高电平信号再转变为低电平信号，所述感测电压信号Vini在所述第二阶段内先保持高电平信号再转变为低电平信号。此时，第二薄膜晶体管T2和第四薄膜晶体管T4关闭，为保持第三薄晶体管T3栅极的电位，数据电压信号Vdata和感测电压信号Vini均先保持高电平电位再转变为低电平电位，由于储存电容Cst和第一电容C1的耦合效应，第三薄膜晶体管T3栅极的电压逐渐增大，源极的电压逐渐减小，第三薄膜晶体管T3栅极和源极的电压差Vgs逐渐增大，并趋近于稳定值。\n\n[0044]在本实施例中，在所述第三阶段内，所述第一扫描信号WR、所述第二扫描信号RD、所述数据电压信号Vdata以及所述感测电压信号Vini均为低电平信号，所述发光信号EM为高电平信号。\n\n[0045]数据传输效率为第三阶段发光时的Vgs与数据写入阶段的Vgs比值，相较于传统3T1C像素驱动电路，本揭示实施例中新增第一电容C1和第一薄膜晶体管T1，形成4T2C像素驱动电路。如图4所示，图4为本揭示实施例提供的像素驱动电路的检测数据图，本揭示实施例提供的像素驱动电路的数据传输效率均小于传统3T1C像素驱动电路的数据传输效率，本揭示实施例较小的数据传输效率设计可从7.10V～6.02V实现高低灰阶的切换，且在低灰阶区Vgs0.1V的变化能较好的转换灰阶。而对于传统3T1C电路来说，数据传输效率较大，Vgs得小于0.03V的变化才能实现灰阶转换，在低灰阶区对数据电压信号Vdata的精度要求更高。因此，本揭示实施例利用数据传输效率放大灰阶电压的方法，能够更好地切换灰阶，提高微发光二极管的显示效果。\n\n[0046]在本实施例中，如图3所示，所述数据电压信号Vdata的时序与所述感测电压信号Vini的时序相同，所述第一扫描信号WR的时序与所述第二扫描信号RD的时序相同。\n\n[0047]本揭示实施例提供一种像素驱动电路，包括数据写入单元、驱动单元、补偿单元和发光单元，通过在驱动单元增加第一电容，所述第一电容的第一端用于接收所述电源高压信号，所述第一电容的第二端耦接所述第二节点，通过第一电容对驱动单元的耦合作用，减小在不同灰阶状态下驱动单元的数据传输效率，通过较低的数据传输效率实现高低灰阶的切换，从而提高像素驱动电路高低灰阶的切换能力，同时在发光单元的微发光二极管与驱动单元之间增设第一薄膜晶体管，所述第一薄膜晶体管的栅极耦接发光信号，漏极耦接微发光二极管的第一端，保证微发光二极管在发光之前不会受到驱动单元电流波动的影响，提高显示装置的显示效果。\n\n[0048]本揭示实施例还提供一种显示装置，包括如上述实施例所提供的像素驱动电路，且能够实现与上述实施例所提供的像素驱动电路相同的技术效果，此处不再赘述。\n\n[0049]综上所述，虽然本揭示以优选实施例揭露如上，但上述优选实施例并非用以限制本揭示，本领域的普通技术人员，在不脱离本揭示的精神和范围内，均可作各种更动与润饰，因此本揭示的保护范围以权利要求界定的范围为基准。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种像素驱动电路及显示装置。\n\n背景技术\n\n[0002]微发光二极管显示装置(Micro Light Emitting Diode Display,Micro-LED)，是一种高密度集成的LED阵列显示装置，相较于液晶显示装置(Liquid Crystal Display,LCD)技术以及有机发光二极管(Organic Light-Emitting Diode,OLED)显示装置技术，Micro-LED具有更高的发光效率和更低的功耗，并且具有寿命长、响应快等优势。\n\n[0003]传统的3T1C像素驱动电路已广泛应用于OLED显示中，对于驱动晶体管来说，通过驱动晶体管的电流大小决定着OLED或者Micro-LED的发光亮度，而电流的大小与驱动晶体管栅极和源极的电压差Vgs有关，电压差大小的不同从而产生不同的灰阶显示。由于Micro-LED相比于OLED具有更高的发光效率和亮度，对于驱动晶体管来说，电压差的变化范围比较小就能实现较高的亮度，因此高低灰阶切换电压差的变化范围很小，这需要数据信号具有更高的精度。\n\n[0004]综上所述，现有Micro-LED显示装置的像素驱动电路存在高低灰阶切换能力较弱的问题。故，有必要提供一种像素驱动电路及显示装置来改善这一缺陷。\n\n发明内容\n\n[0005]本揭示实施例提供一种像素驱动电路及显示装置，用于解决Micro-LED显示装置的像素驱动电路存在高低灰阶切换能力较弱的问题。\n\n[0006]本揭示实施例提供一种像素驱动电路，包括数据写入单元、驱动单元、补偿单元和发光单元；\n\n[0007]所述数据写入单元用于接收数据电压信号和第一扫描信号，并与所述驱动单元耦接于第一节点；\n\n[0008]所述驱动单元用于接收电源高压信号，并与所述补偿单元耦接于第二节点；\n\n[0009]所述发光单元用于接收发光信号和电源低压信号，并与所述驱动单元耦接于第三节点；\n\n[0010]其中，所述驱动单元包括第一电容，所述第一电容的第一端用于接收所述电源高压信号，所述第一电容的第二端耦接所述第二节点，所述发光单元包括第一薄膜晶体管和微发光二极管，所述第一薄膜晶体管的栅极用于接收所述发光信号，所述第一薄膜晶体管的源极耦接所述第三节点，所述第一薄膜晶体管的漏极耦接所述微发光二极管的第一端。\n\n[0011]根据本揭示一实施例，所述数据写入单元包括第二薄膜晶体管，所述第二薄膜晶体管的栅极用于接收所述第一扫描信号，所述第二薄膜晶体管的源极用于接收所述数据电压信号，所述第二薄膜晶体管的漏极耦接所述第一节点。\n\n[0012]根据本揭示一实施例，所述驱动单元还包括第三薄膜晶体管和储存电容，所述第三薄膜晶体管的栅极耦接所述第一节点，所述第三薄膜晶体管的源极用于接收所述电源高压信号，所述第三薄膜晶体管的漏极耦接所述第三节点，所述储存电容的第一端耦接所述第一节点，所述储存电容的第二端耦接所述第二节点。\n\n[0013]根据本揭示一实施例，所述补偿单元用于接收第二扫描信号和耦接感测电路，所述感测电路用于产生感测电压信号，通过所述补偿单元传输至所述第三薄膜晶体管，用于感测所述第三薄膜晶体管的阈值电压，并对所述阈值电压进行补偿。\n\n[0014]根据本揭示一实施例，所述补偿单元包括第四薄膜晶体管，所述第四薄膜晶体管的栅极用于接收所述第二扫描信号，所述第四薄膜晶体管的源极耦接所述感测电路，所述第四薄膜晶体管的漏极耦接所述第二节点。\n\n[0015]根据本揭示一实施例，所述第一薄膜晶体管、所述第二薄膜晶体管、所述第三薄膜晶体管和所述第四薄膜晶体管均为N型晶体管。\n\n[0016]根据本揭示一实施例，所述像素驱动电路的驱动时序包括第一阶段、第二阶段和第三阶段；\n\n[0017]其中，在所述第一阶段内，通过所述第一扫描信号和所述第二扫描信号分别开启所述第二薄膜晶体管和所述第四薄膜晶体管，并写入所述数据电压信号和所述感测电压信号；\n\n[0018]在所述第二阶段内，通过所述第一扫描信号和所述第二扫描信号分别关闭所述第二薄膜晶体管和所述第四薄膜晶体管，所述驱动单元发生电容耦合效应；\n\n[0019]在所述第三阶段内，开启所述第三薄膜晶体管，并通过所述发光信号开启所述第一薄膜晶体管，所述驱动单元产生驱动电流驱动所述微发光二极管发光。\n\n[0020]根据本揭示一实施例，在所述第一阶段内，所述第一扫描信号、所述第二扫描信号、所述数据电压信号以及所述感测电压信号均为高电平信号，所述发光信号为低电平信号；\n\n[0021]在所述第二阶段内，所述第一扫描信号、所述第二扫描信号和所述发光信号均为低电平信号，所述数据电压信号包括高电平信号和低电平信号，所述感测电压信号包括高电平信号和低电平信号；\n\n[0022]在所述第三阶段内，所述第一扫描信号、所述第二扫描信号、所述数据电压信号以及所述感测电压信号均为低电平信号，所述发光信号为高电平信号。\n\n[0023]根据本揭示一实施例，所述数据电压信号的时序与所述感测电压信号的时序相同，所述第一扫描信号的时序与所述第二扫描信号的时序相同。\n\n[0024]本揭示实施例还提供一种显示装置，包括如上述的像素驱动电路。\n\n[0025]本揭示实施例的有益效果：本揭示实施例提供一种像素驱动电路，包括数据写入单元、驱动单元、补偿单元和发光单元，通过在驱动单元增加第一电容，所述第一电容的第一端用于接收所述电源高压信号，所述第一电容的第二端耦接所述第二节点，通过第一电容对驱动单元的耦合作用，减小在不同灰阶状态下驱动单元的数据传输效率，通过较低的数据传输效率实现高低灰阶的切换，从而提高像素驱动电路高低灰阶的切换能力，同时在发光单元的微发光二极管与驱动单元之间增设第一薄膜晶体管，所述第一薄膜晶体管的栅极耦接发光信号，漏极耦接微发光二极管的第一端，保证微发光二极管在发光之前不会受到驱动单元电流波动的影响，提高显示装置的显示效果。\n\n附图说明\n\n[0026]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是揭示的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0027]图1为本揭示实施例提供的像素驱动电路的框架示意图；\n\n[0028]图2为本揭示实施例提供的像素驱动电路的结构示意图；\n\n[0029]图3为本揭示实施例提供的像素驱动电路的时序图；\n\n[0030]图4为本揭示实施例提供的像素驱动电路的检测数据图。\n\n具体实施方式\n\n[0031]以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。\n\n[0032]下面结合附图和具体实施例对本揭示做进一步的说明：\n\n[0033]本揭示实施例提供一种像素驱动电路，下面结合图1至图3进行详细说明。\n\n[0034]如图1所示，图1为本揭示实施例提供的像素驱动电路的框架示意图，所述像素驱动电路包括数据写入单元110、驱动单元120、补偿单元130和发光单元140。所述数据写入单元110用于接收数据电压信号Vdata和第一扫描信号WR，并与所述驱动单元120耦接于第一节点A，所述驱动单元120用于接收电源高压信号VDD，并与所述补偿单元130耦接于第二节点B，所述补偿单元130用于接收第二扫描信号RD，并耦接感测电路Sense，所述发光单元140用于接收发光信号EM和电源低压信号VSS，并与所述驱动单元120耦接于第三节点C。\n\n[0035]如图2所示，在本实施例中，所述驱动单元120包括第一电容C1，所述第一电容C1的第一端用于接收所述电源高压信号VDD，所述第一电容C1的第二端耦接所述第二节点B，所述发光单元140包括第一薄膜晶体管T1和微发光二极管141，所述第一薄膜晶体管T1的栅极用于接收所述发光信号EM，所述第一薄膜晶体管T1的源极耦接所述第三节点C，所述第一薄膜晶体管T1的漏极耦接所述微发光二极管141的第一端,所述微发光二极管141的第二端用于接收所述电源低压信号VSS。\n\n[0036]在本实施例中，所述数据写入单元110包括第二薄膜晶体管T2，所述第二薄膜晶体管T2的栅极用于接收所述第一扫描信号WR，所述第二薄膜晶体管T2的源极用于接收所述数据电压信号Vdata，所述第二薄膜晶体管T2的漏极耦接所述第一节点A。\n\n[0037]在本实施例中，所述驱动单元120还包括第三薄膜晶体管T3和储存电容Cst，所述第三薄膜晶体管T3的栅极耦接所述第一节点A，所述第三薄膜晶体管T3的源极用于接收所述电源高压信号VDD，所述第三薄膜晶体管T3的漏极耦接所述第三节点C，所述储存电容Cst的第一端耦接所述第一节点A，所述储存电容Cst的第二端耦接所述第二节点B。\n\n[0038]如图2所示，所述补偿单元130用于接收第二扫描信号RD和耦接感测电路Sense，所述感测电路产生感测电压信号Vini，通过所述补偿单元130传输至第三薄膜晶体管T3，用于感测所述第三薄膜晶体管T3的阈值电压，并对所述阈值电压进行补偿。\n\n[0039]具体的，所述补偿单元130包括第四薄膜晶体管T4，所述第四薄膜晶体管T4的栅极耦接所述第二扫描信号RD，所述第四薄膜晶体管T4的源极耦接所述感测电路Sense，所述第四薄膜晶体管T4的漏极耦接所述第二节点B。\n\n[0040]优选的，所述第一薄膜晶体管T1、所述第二薄膜晶体管T2、所述第三薄膜晶体管T3和所述第四薄膜晶体管T4均为N型晶体管。\n\n[0041]如图3所示，图3为本揭示实施例所提供的像素驱动电路的时序图，所述像素驱动电路的驱动时序包括第一阶段、第二阶段和第三阶段。其中，在所述第一阶段内，通过所述第一扫描信号WR和所述第二扫描信号RD分别开启所述第二薄膜晶体管T2和所述第四薄膜晶体管T4，并写入所述数据电压信号Vdata和所述感测电压信号Vini；在所述第二阶段内，通过所述第一扫描信号WR和所述第二扫描信号RD分别关闭所述第二薄膜晶体管T2和所述第四薄膜晶体管T4，所述驱动单元120发生电容耦合效应，此时，由于储存电容Cst和第一电容C1的电容耦合效应，第三薄膜晶体管T3栅极和源极的电压差Vgs逐渐升高接近稳定值；在所述第三阶段内，所述第三薄膜晶体管T3的Vgs升高至稳定值，开启所述第三薄膜晶体管T3，并通过所述发光信号EM开启所述第一薄膜晶体管T1，所述驱动单元120产生驱动电流驱动所述发光单元140内的微发光二极管141发光。\n\n[0042]在本实施例中，在所述第一阶段内，所述第一扫描信号WR、所述第二扫描信号RD、所述数据电压信号Vdata以及所述感测电路Sense的感测电压信号Vini均为高电平信号，所述发光信号EM为低电平信号。此时，第二薄膜晶体管T2打开，向第三薄膜晶体管T3的栅极输入数据电压信号Vdata，第四薄膜晶体管T4打开，向所述第三薄膜晶体管T3输入感测电压信号Vini，同时分别向储存电容Cst和第一电容C1充电。\n\n[0043]在本实施例中，在所述第二阶段内，所述第一扫描信号WR、所述第二扫描信号RD和所述发光信号EM均为低电平信号，所述数据电压信号Vdata包括高电平信号和低电平信号，所述感测电压信号Vini包括高电平信号和低电平信号。具体地，所述数据电压信号Vdata在所述第二阶段内先保持高电平信号再转变为低电平信号，所述感测电压信号Vini在所述第二阶段内先保持高电平信号再转变为低电平信号。此时，第二薄膜晶体管T2和第四薄膜晶体管T4关闭，为保持第三薄晶体管T3栅极的电位，数据电压信号Vdata和感测电压信号Vini均先保持高电平电位再转变为低电平电位，由于储存电容Cst和第一电容C1的耦合效应，第三薄膜晶体管T3栅极的电压逐渐增大，源极的电压逐渐减小，第三薄膜晶体管T3栅极和源极的电压差Vgs逐渐增大，并趋近于稳定值。\n\n[0044]在本实施例中，在所述第三阶段内，所述第一扫描信号WR、所述第二扫描信号RD、所述数据电压信号Vdata以及所述感测电压信号Vini均为低电平信号，所述发光信号EM为高电平信号。\n\n[0045]数据传输效率为第三阶段发光时的Vgs与数据写入阶段的Vgs比值，相较于传统3T1C像素驱动电路，本揭示实施例中新增第一电容C1和第一薄膜晶体管T1，形成4T2C像素驱动电路。如图4所示，图4为本揭示实施例提供的像素驱动电路的检测数据图，本揭示实施例提供的像素驱动电路的数据传输效率均小于传统3T1C像素驱动电路的数据传输效率，本揭示实施例较小的数据传输效率设计可从7.10V～6.02V实现高低灰阶的切换，且在低灰阶区Vgs0.1V的变化能较好的转换灰阶。而对于传统3T1C电路来说，数据传输效率较大，Vgs得小于0.03V的变化才能实现灰阶转换，在低灰阶区对数据电压信号Vdata的精度要求更高。因此，本揭示实施例利用数据传输效率放大灰阶电压的方法，能够更好地切换灰阶，提高微发光二极管的显示效果。\n\n[0046]在本实施例中，如图3所示，所述数据电压信号Vdata的时序与所述感测电压信号Vini的时序相同，所述第一扫描信号WR的时序与所述第二扫描信号RD的时序相同。\n\n[0047]本揭示实施例提供一种像素驱动电路，包括数据写入单元、驱动单元、补偿单元和发光单元，通过在驱动单元增加第一电容，所述第一电容的第一端用于接收所述电源高压信号，所述第一电容的第二端耦接所述第二节点，通过第一电容对驱动单元的耦合作用，减小在不同灰阶状态下驱动单元的数据传输效率，通过较低的数据传输效率实现高低灰阶的切换，从而提高像素驱动电路高低灰阶的切换能力，同时在发光单元的微发光二极管与驱动单元之间增设第一薄膜晶体管，所述第一薄膜晶体管的栅极耦接发光信号，漏极耦接微发光二极管的第一端，保证微发光二极管在发光之前不会受到驱动单元电流波动的影响，提高显示装置的显示效果。\n\n[0048]本揭示实施例还提供一种显示装置，包括如上述实施例所提供的像素驱动电路，且能够实现与上述实施例所提供的像素驱动电路相同的技术效果，此处不再赘述。\n\n[0049]综上所述，虽然本揭示以优选实施例揭露如上，但上述优选实施例并非用以限制本揭示，本领域的普通技术人员，在不脱离本揭示的精神和范围内，均可作各种更动与润饰，因此本揭示的保护范围以权利要求界定的范围为基准。');
INSERT INTO `os_patent_instruction_text` VALUES (10707, 23761, '技术领域\n\n[0001]本发明涉及显示技术领域，特别是一种显示面板。\n\n背景技术\n\n[0002]MicroLED显示器相比OLED显示器具有可靠性高，色域高，亮度高，透明度高，像素密度(PPI)高；且封装要求低，更容易实现柔性及无缝拼接显示，是未来极具有发展潜力的未来显示器,尤其是透明显示部分，由于MicroLED尺寸小，可以实现芯片面积仅占像素面积的1％一下，比如MicroLED芯片大小为15um*15um，像素大小为250um*250um，此时MicroLED芯片面积仅占像素面积的1％，而通过像素的优化设计，可以实现开口率大于80％以上，从而显示高透明的高像素密度(PPI)的MicroLED显示。而高解析度高透明的大尺寸应用是目前LCD、OLED等显示器所无法与MicroLED媲美的,定会在未来有广阔的应用前景。\n\n[0003]MicroLED显示器在通过巨量转移MicroLED发光单元到显示基板(如TFT玻璃基板)后才能实现显示。但目前限于良率及组装效率，很难直接实现大尺寸显示基板的巨量转移。如何实现小尺寸MicroLED透明显示面板拼接成为大尺寸的透明显示屏成为目前开发大尺寸MicroLED透明显示面板的关键。但普通的AM显示面板都具有Fanout区和bonding区，如何实现fanout区的和拼接区的透明成为目前解决大尺寸透明拼接技术的关键。\n\n[0004]因此，急需提供一种新大尺寸MicroLED显示面板，用以避免MicroLED的大量转移带来的较低的组装效率和良率，实现大尺寸MicroLED显示面板的透明显示。\n\n发明内容\n\n[0005]本发明的目的是，提供一种显示面板，避免MicroLED的大量转移带来的较低的组装效率和良率，实现大尺寸MicroLED显示面板的透明显示。\n\n[0006]为达到上述目的，本发明提供一种显示面板，包括：透明基板，具有显示区；多个MicroLED显示单元，阵列式设于所述显示区，相邻的MicroLED显示单元的侧壁相互贴附；以及多根透明金属线，设于所述透明基板上，用以电性连接所述多个MicroLED显示单元，每根透明金属线围绕相对应的MicroLED显示单元；其中，每个MicroLED显示单元设于相对应的透明金属线上。\n\n[0007]进一步地，每一MicroLED显示单元包括：TFT玻璃基板；多个MicroLED发光单元，阵列式设于所述TFT玻璃基板远离所述透明基板的一侧；侧面金属层，围绕所述TFT玻璃基板的侧壁，用以将所述TFT玻璃基板与相对应的透明金属线相连接。\n\n[0008]进一步地，所述侧面金属层的截面形状为“匚”型。\n\n[0009]进一步地，所述侧面金属层包括以一竖直段以及两个垂直连接所述竖直段两端的横向段，所述竖直段贴附所述TFT玻璃基板的侧壁；其中，一横向段设于所述TFT玻璃基板的上且围绕所述多个MicroLED发光单元，另一横向段设于所述TFT玻璃基板的下方并位于所述TFT玻璃基板与所述透明金属线之间。\n\n[0010]进一步地，在所述透明金属线与所述MicroLED显示单元之间还设有一导电绑定层。\n\n[0011]进一步地，还包括：封装层，设于所述MicroLED显示单元上。\n\n[0012]进一步地，所述导电绑定层的材料包括ACF，锡膏，或共晶。\n\n[0013]进一步地，所述透明金属线的材料包括：精细的金属线，纳米银线，石墨烯，氧化铟锡或纳米碳管。\n\n[0014]进一步地，所述封装层的折射率与所述TFT玻璃基板的折射率差值的绝对值小于等于0.01。\n\n[0015]进一步地，所述MicroLED发光单元包括红色发光单元、绿色发光单元以及蓝色发光单元。\n\n[0016]本发明的有益效果是：本发明提供一种显示面板，包括透明基板，具有显示区以及扇出区，通过将小尺寸的多个MicroLED显示单元阵列式设于所述显示区，用以拼接形成一大尺寸的MicroLED显示面板，并且相邻的MicroLED显示单元的侧壁相互紧密贴附，进而可以实现MicroLED显示单元的无缝拼接，而连接MicroLED显示单元的透明金属线以及扇出走线皆为透明材料，进而可以提供大尺寸的MicroLED显示面板的透明显示。\n\n附图说明\n\n[0017]下面结合附图和实施例对本发明作进一步的描述。\n\n[0018]图1为本发明提供的显示面板的结构示意图；\n\n[0019]图2为本发明提供的透明基板以及透明金属线的布局图；\n\n[0020]图3为本发明提供的MicroLED显示单元的结构示意图；\n\n[0021]图4为本发明一实施例提供的MicroLED发光单元的结构示意图；\n\n[0022]图5为本发明另一实施例提供的MicroLED发光单元的结构示意图\n\n[0023]显示面板100；显示区110；扇出区120；\n\n[0024]透明基板101；MicroLED显示单元130；透明金属线102；\n\n[0025]导电绑定层103；封装层104；TFT玻璃基板131；\n\n[0026]MicroLED发光单元132；侧面金属层133；扇出走线109；\n\n[0027]PCB板107；柔性电路板105；驱动芯片106。\n\n具体实施方式\n\n[0028]为了更好地理解本发明的内容，下面通过具体的实施例对本发明作进一步说明，但本发明的实施和保护范围不限于此。\n\n[0029]以下实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「顶」、「底」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。\n\n[0030]如图1所示，本发明提供一种显示面板100，包括：透明基板101、多个MicroLED显示单元130、多根透明金属线102、导电绑定层103以及封装层104。\n\n[0031]所述透明基板101具有显示区110以及扇出区120。\n\n[0032]所述MicroLED显示单元130为小尺寸构造，其阵列式设于所述显示区110，用以拼接形成一大尺寸的MicroLED显示面板100。相邻的MicroLED显示单元130的侧壁相互紧密贴附，进而可以实现MicroLED显示单元130的无缝拼接。\n\n[0033]本发明并未对MicroLED显示单元130的数量进行限定，一般为偶数。本发明的优选实施例通过4个MicroLED显示单元130。\n\n[0034]所述透明金属线102设于所述透明基板101上，通过导电绑定层103电性连接每一MicroLED显示单元130，进而可以实现多个MicroLED显示单元130的信号可以互通，由于上述材料皆为透明材料，进而可以实现大尺寸面板的透明显示。\n\n[0035]所述透明金属线102的材料包括：精细的金属线(Ag,Cu,Al等)，纳米银线，石墨烯，氧化铟锡或纳米碳管。\n\n[0036]所述导电绑定层103的材料包括ACF，锡膏，或共晶(AuSn，AnIn，AgSn，AgInCu等)焊接材料，用于稳固透明金属线102与所述透明基板101。\n\n[0037]请同时参合图1、图2所示，每根透明金属线102围绕相对应的MicroLED显示单元130，或者换句话讲，每根透明金属线102均位于相对应的MicroLED显示单元130的底部四周，使得每个MicroLED显示单元130均设于相对应的透明金属线上102。所述透明金属线102围绕所述MicroLED显示单元130设置可以避免透明金属线102对透明显示的影响。\n\n[0038]每个MicroLED显示单元130对应的透明金属线102可以是方形闭合线，在本实施例中，每个MicroLED显示单元130对应的透明金属线102包括多根独立的线段，分别设于MicroLED显示单元130的上下左右的四周。\n\n[0039]更进一步地讲，相邻MicroLED显示单元130之间还可以共用一部分秀明金属线102。详细来讲，设于相邻的MicroLED显示单元130之间的两根独立的线段，其由于制备方便可以同时形成。以图2所示的四个MicroLED显示单元130为例，位于左上角与左下角的MicroLED显示单元130可以共用独立的线段1021；以及位于左上角与右上角的MicroLED显示单元130可以共用独立的线段1022。\n\n[0040]同时参照图1、图3所示，所述MicroLED显示单元130包括：TFT玻璃基板131、多个MicroLED发光单元132以及侧面金属层133。\n\n[0041]图3中只画出位于所述TFT玻璃基板131右侧的侧面金属层133，图中省略了位于所述TFT玻璃基板131的其余侧面处的侧面金属层。\n\n[0042]所述TFT玻璃基板131具有多个薄膜晶体管，用以驱动每个MicroLED发光单元132发光显示。\n\n[0043]多个MicroLED发光单元132阵列式设于所述TFT玻璃基板131远离所述透明基板101的一侧，可以实现可靠性高，色域高，亮度高，透明度高，PPI高的画面显示。\n\n[0044]所述MicroLED发光单元132包括红色发光单元、绿色发光单元以及蓝色发光单元，在一实施例中，按照红色发光单元、绿色发光单元以及蓝色发光单元依次规则的排布。\n\n[0045]所述MicroLED发光单元132的结构包括倒装结构(如图4所示)和垂直结构(如图5所示)。\n\n[0046]本发明优选为倒装结构，倒装结构和垂直结构皆包括第一电极、第二电极以及磊晶层构成。\n\n[0047]在如图4所示的倒装结构中，第二电极23设于磊晶层22的凹槽中，第一电极21设于磊晶层22上，第一电极21与第二电极23位于同一侧；而在如图5所示的垂直结构中，磊晶层32设于第一电极31与第二电极33之间。\n\n[0048]这样在通过导电绑定层103进行绑定连接的时候，倒装结构直接可以将第一电极21与第二电极23与所述透明金属线102相连接，在后段制程上更加简单。而垂直结构则要将设于上方的第二电极33通过引线连接导电绑定层103。\n\n[0049]所述侧面金属层133围绕所述TFT玻璃基板131的侧壁，用以将所述TFT玻璃基板131与所述多根透明金属线102相连接。\n\n[0050]相邻MicroLED显示单元130的TFT玻璃基板131的之间的间隙被所述侧面金属层133填充，进而可以实现无缝拼接。\n\n[0051]如图1所示，所述侧面金属层133包括一竖直段1333以及两个垂直连接所述竖直段两端的横向段(上横向段1331以及下横向段1332)，所述竖直段1333贴附所述TFT玻璃基板131的侧壁；进而形成所述侧面金属层133的截面形状为“匚”型。\n\n[0052]其中一横向段(上横向段1331)设于所述TFT玻璃基板131的上方且围绕所述多个MicroLED发光单元132，另一横向段(下横向段1332)设于所述TFT玻璃基板131与所述透明金属线102之间。\n\n[0053]由于所述另一横向段1332与透明金属线102具有一定的厚度，“匚”型侧面金属层133将MicroLED显示单元130稳定的托起，进而在安装MicroLED显示单元130时不需要贴附所述透明基板101，拼接安装更加简单方便。\n\n[0054]所述封装层104设于所述MicroLED显示单元130上。\n\n[0055]此外，为了尽量消除MicroLED显示单元130之间的拼接缝，所述封装层104的折射率与TFT玻璃基板131的折射率差值的绝对值小于等于0.01。\n\n[0056]所述显示面板100还包括扇出走线109、PCB板107以及柔性电路板105。\n\n[0057]所述扇出走线109设于所述透明基板101上且对应所述扇出区120，所述扇出走线109一端连接所述透明金属线102，另一端连接柔性电路板105。\n\n[0058]所述柔性电路板105内设有一驱动芯片106。将PCB板107与扇出走线109相连接，进而整个大尺寸的MicroLED显示面板100可以PCB发出信号实现画面显示。\n\n[0059]柔性电路板105与PCB以及扇出走线109的连接方式，皆可通过导电绑定材料108实现电性连接。\n\n[0060]本发明提供了一种显示面板100，包括透明基板101，具有显示区110以及扇出区120，通过将多个小尺寸的MicroLED显示单元130阵列式设于所述显示区110，用以拼接形成一大尺寸的MicroLED显示面板，并且相邻的MicroLED显示单元130的侧壁相互紧密贴附，进而可以实现MicroLED显示单元130的无缝拼接，而连接MicroLED显示单元130的透明金属线102以及扇出走线109皆为透明材料，进而可以提供大尺寸的MicroLED显示面板的透明显示。\n\n[0061]并且，本发明并未大量移植MicroLED发光单元132至所述透明基板101上，通过将多个小尺寸的MicroLED显示单元130拼接形成大尺寸的MicroLED显示面板，进而提高了转移的良率以及组装效率。\n\n[0062]应当指出，对于经充分说明的本发明来说，还可具有多种变换及改型的实施方案，并不局限于上述实施方式的具体实施例。上述实施例仅仅作为本发明的说明，而不是对本发明的限制。总之，本发明的保护范围应包括那些对于本领域普通技术人员来说显而易见的变换或替代以及改型。', '技术领域\n\n[0001]本发明涉及显示技术领域，特别是一种显示面板。\n\n背景技术\n\n[0002]MicroLED显示器相比OLED显示器具有可靠性高，色域高，亮度高，透明度高，像素密度(PPI)高；且封装要求低，更容易实现柔性及无缝拼接显示，是未来极具有发展潜力的未来显示器,尤其是透明显示部分，由于MicroLED尺寸小，可以实现芯片面积仅占像素面积的1％一下，比如MicroLED芯片大小为15um*15um，像素大小为250um*250um，此时MicroLED芯片面积仅占像素面积的1％，而通过像素的优化设计，可以实现开口率大于80％以上，从而显示高透明的高像素密度(PPI)的MicroLED显示。而高解析度高透明的大尺寸应用是目前LCD、OLED等显示器所无法与MicroLED媲美的,定会在未来有广阔的应用前景。\n\n[0003]MicroLED显示器在通过巨量转移MicroLED发光单元到显示基板(如TFT玻璃基板)后才能实现显示。但目前限于良率及组装效率，很难直接实现大尺寸显示基板的巨量转移。如何实现小尺寸MicroLED透明显示面板拼接成为大尺寸的透明显示屏成为目前开发大尺寸MicroLED透明显示面板的关键。但普通的AM显示面板都具有Fanout区和bonding区，如何实现fanout区的和拼接区的透明成为目前解决大尺寸透明拼接技术的关键。\n\n[0004]因此，急需提供一种新大尺寸MicroLED显示面板，用以避免MicroLED的大量转移带来的较低的组装效率和良率，实现大尺寸MicroLED显示面板的透明显示。\n\n发明内容\n\n[0005]本发明的目的是，提供一种显示面板，避免MicroLED的大量转移带来的较低的组装效率和良率，实现大尺寸MicroLED显示面板的透明显示。\n\n[0006]为达到上述目的，本发明提供一种显示面板，包括：透明基板，具有显示区；多个MicroLED显示单元，阵列式设于所述显示区，相邻的MicroLED显示单元的侧壁相互贴附；以及多根透明金属线，设于所述透明基板上，用以电性连接所述多个MicroLED显示单元，每根透明金属线围绕相对应的MicroLED显示单元；其中，每个MicroLED显示单元设于相对应的透明金属线上。\n\n[0007]进一步地，每一MicroLED显示单元包括：TFT玻璃基板；多个MicroLED发光单元，阵列式设于所述TFT玻璃基板远离所述透明基板的一侧；侧面金属层，围绕所述TFT玻璃基板的侧壁，用以将所述TFT玻璃基板与相对应的透明金属线相连接。\n\n[0008]进一步地，所述侧面金属层的截面形状为“匚”型。\n\n[0009]进一步地，所述侧面金属层包括以一竖直段以及两个垂直连接所述竖直段两端的横向段，所述竖直段贴附所述TFT玻璃基板的侧壁；其中，一横向段设于所述TFT玻璃基板的上且围绕所述多个MicroLED发光单元，另一横向段设于所述TFT玻璃基板的下方并位于所述TFT玻璃基板与所述透明金属线之间。\n\n[0010]进一步地，在所述透明金属线与所述MicroLED显示单元之间还设有一导电绑定层。\n\n[0011]进一步地，还包括：封装层，设于所述MicroLED显示单元上。\n\n[0012]进一步地，所述导电绑定层的材料包括ACF，锡膏，或共晶。\n\n[0013]进一步地，所述透明金属线的材料包括：精细的金属线，纳米银线，石墨烯，氧化铟锡或纳米碳管。\n\n[0014]进一步地，所述封装层的折射率与所述TFT玻璃基板的折射率差值的绝对值小于等于0.01。\n\n[0015]进一步地，所述MicroLED发光单元包括红色发光单元、绿色发光单元以及蓝色发光单元。\n\n[0016]本发明的有益效果是：本发明提供一种显示面板，包括透明基板，具有显示区以及扇出区，通过将小尺寸的多个MicroLED显示单元阵列式设于所述显示区，用以拼接形成一大尺寸的MicroLED显示面板，并且相邻的MicroLED显示单元的侧壁相互紧密贴附，进而可以实现MicroLED显示单元的无缝拼接，而连接MicroLED显示单元的透明金属线以及扇出走线皆为透明材料，进而可以提供大尺寸的MicroLED显示面板的透明显示。\n\n附图说明\n\n[0017]下面结合附图和实施例对本发明作进一步的描述。\n\n[0018]图1为本发明提供的显示面板的结构示意图；\n\n[0019]图2为本发明提供的透明基板以及透明金属线的布局图；\n\n[0020]图3为本发明提供的MicroLED显示单元的结构示意图；\n\n[0021]图4为本发明一实施例提供的MicroLED发光单元的结构示意图；\n\n[0022]图5为本发明另一实施例提供的MicroLED发光单元的结构示意图\n\n[0023]显示面板100；显示区110；扇出区120；\n\n[0024]透明基板101；MicroLED显示单元130；透明金属线102；\n\n[0025]导电绑定层103；封装层104；TFT玻璃基板131；\n\n[0026]MicroLED发光单元132；侧面金属层133；扇出走线109；\n\n[0027]PCB板107；柔性电路板105；驱动芯片106。\n\n具体实施方式\n\n[0028]为了更好地理解本发明的内容，下面通过具体的实施例对本发明作进一步说明，但本发明的实施和保护范围不限于此。\n\n[0029]以下实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「顶」、「底」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。\n\n[0030]如图1所示，本发明提供一种显示面板100，包括：透明基板101、多个MicroLED显示单元130、多根透明金属线102、导电绑定层103以及封装层104。\n\n[0031]所述透明基板101具有显示区110以及扇出区120。\n\n[0032]所述MicroLED显示单元130为小尺寸构造，其阵列式设于所述显示区110，用以拼接形成一大尺寸的MicroLED显示面板100。相邻的MicroLED显示单元130的侧壁相互紧密贴附，进而可以实现MicroLED显示单元130的无缝拼接。\n\n[0033]本发明并未对MicroLED显示单元130的数量进行限定，一般为偶数。本发明的优选实施例通过4个MicroLED显示单元130。\n\n[0034]所述透明金属线102设于所述透明基板101上，通过导电绑定层103电性连接每一MicroLED显示单元130，进而可以实现多个MicroLED显示单元130的信号可以互通，由于上述材料皆为透明材料，进而可以实现大尺寸面板的透明显示。\n\n[0035]所述透明金属线102的材料包括：精细的金属线(Ag,Cu,Al等)，纳米银线，石墨烯，氧化铟锡或纳米碳管。\n\n[0036]所述导电绑定层103的材料包括ACF，锡膏，或共晶(AuSn，AnIn，AgSn，AgInCu等)焊接材料，用于稳固透明金属线102与所述透明基板101。\n\n[0037]请同时参合图1、图2所示，每根透明金属线102围绕相对应的MicroLED显示单元130，或者换句话讲，每根透明金属线102均位于相对应的MicroLED显示单元130的底部四周，使得每个MicroLED显示单元130均设于相对应的透明金属线上102。所述透明金属线102围绕所述MicroLED显示单元130设置可以避免透明金属线102对透明显示的影响。\n\n[0038]每个MicroLED显示单元130对应的透明金属线102可以是方形闭合线，在本实施例中，每个MicroLED显示单元130对应的透明金属线102包括多根独立的线段，分别设于MicroLED显示单元130的上下左右的四周。\n\n[0039]更进一步地讲，相邻MicroLED显示单元130之间还可以共用一部分秀明金属线102。详细来讲，设于相邻的MicroLED显示单元130之间的两根独立的线段，其由于制备方便可以同时形成。以图2所示的四个MicroLED显示单元130为例，位于左上角与左下角的MicroLED显示单元130可以共用独立的线段1021；以及位于左上角与右上角的MicroLED显示单元130可以共用独立的线段1022。\n\n[0040]同时参照图1、图3所示，所述MicroLED显示单元130包括：TFT玻璃基板131、多个MicroLED发光单元132以及侧面金属层133。\n\n[0041]图3中只画出位于所述TFT玻璃基板131右侧的侧面金属层133，图中省略了位于所述TFT玻璃基板131的其余侧面处的侧面金属层。\n\n[0042]所述TFT玻璃基板131具有多个薄膜晶体管，用以驱动每个MicroLED发光单元132发光显示。\n\n[0043]多个MicroLED发光单元132阵列式设于所述TFT玻璃基板131远离所述透明基板101的一侧，可以实现可靠性高，色域高，亮度高，透明度高，PPI高的画面显示。\n\n[0044]所述MicroLED发光单元132包括红色发光单元、绿色发光单元以及蓝色发光单元，在一实施例中，按照红色发光单元、绿色发光单元以及蓝色发光单元依次规则的排布。\n\n[0045]所述MicroLED发光单元132的结构包括倒装结构(如图4所示)和垂直结构(如图5所示)。\n\n[0046]本发明优选为倒装结构，倒装结构和垂直结构皆包括第一电极、第二电极以及磊晶层构成。\n\n[0047]在如图4所示的倒装结构中，第二电极23设于磊晶层22的凹槽中，第一电极21设于磊晶层22上，第一电极21与第二电极23位于同一侧；而在如图5所示的垂直结构中，磊晶层32设于第一电极31与第二电极33之间。\n\n[0048]这样在通过导电绑定层103进行绑定连接的时候，倒装结构直接可以将第一电极21与第二电极23与所述透明金属线102相连接，在后段制程上更加简单。而垂直结构则要将设于上方的第二电极33通过引线连接导电绑定层103。\n\n[0049]所述侧面金属层133围绕所述TFT玻璃基板131的侧壁，用以将所述TFT玻璃基板131与所述多根透明金属线102相连接。\n\n[0050]相邻MicroLED显示单元130的TFT玻璃基板131的之间的间隙被所述侧面金属层133填充，进而可以实现无缝拼接。\n\n[0051]如图1所示，所述侧面金属层133包括一竖直段1333以及两个垂直连接所述竖直段两端的横向段(上横向段1331以及下横向段1332)，所述竖直段1333贴附所述TFT玻璃基板131的侧壁；进而形成所述侧面金属层133的截面形状为“匚”型。\n\n[0052]其中一横向段(上横向段1331)设于所述TFT玻璃基板131的上方且围绕所述多个MicroLED发光单元132，另一横向段(下横向段1332)设于所述TFT玻璃基板131与所述透明金属线102之间。\n\n[0053]由于所述另一横向段1332与透明金属线102具有一定的厚度，“匚”型侧面金属层133将MicroLED显示单元130稳定的托起，进而在安装MicroLED显示单元130时不需要贴附所述透明基板101，拼接安装更加简单方便。\n\n[0054]所述封装层104设于所述MicroLED显示单元130上。\n\n[0055]此外，为了尽量消除MicroLED显示单元130之间的拼接缝，所述封装层104的折射率与TFT玻璃基板131的折射率差值的绝对值小于等于0.01。\n\n[0056]所述显示面板100还包括扇出走线109、PCB板107以及柔性电路板105。\n\n[0057]所述扇出走线109设于所述透明基板101上且对应所述扇出区120，所述扇出走线109一端连接所述透明金属线102，另一端连接柔性电路板105。\n\n[0058]所述柔性电路板105内设有一驱动芯片106。将PCB板107与扇出走线109相连接，进而整个大尺寸的MicroLED显示面板100可以PCB发出信号实现画面显示。\n\n[0059]柔性电路板105与PCB以及扇出走线109的连接方式，皆可通过导电绑定材料108实现电性连接。\n\n[0060]本发明提供了一种显示面板100，包括透明基板101，具有显示区110以及扇出区120，通过将多个小尺寸的MicroLED显示单元130阵列式设于所述显示区110，用以拼接形成一大尺寸的MicroLED显示面板，并且相邻的MicroLED显示单元130的侧壁相互紧密贴附，进而可以实现MicroLED显示单元130的无缝拼接，而连接MicroLED显示单元130的透明金属线102以及扇出走线109皆为透明材料，进而可以提供大尺寸的MicroLED显示面板的透明显示。\n\n[0061]并且，本发明并未大量移植MicroLED发光单元132至所述透明基板101上，通过将多个小尺寸的MicroLED显示单元130拼接形成大尺寸的MicroLED显示面板，进而提高了转移的良率以及组装效率。\n\n[0062]应当指出，对于经充分说明的本发明来说，还可具有多种变换及改型的实施方案，并不局限于上述实施方式的具体实施例。上述实施例仅仅作为本发明的说明，而不是对本发明的限制。总之，本发明的保护范围应包括那些对于本领域普通技术人员来说显而易见的变换或替代以及改型。');
INSERT INTO `os_patent_instruction_text` VALUES (10708, 23762, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种阵列基板及其制备方法。\n\n背景技术\n\n[0002]近年来，微型发光二极管(Micro LED)显示器相比有机发光二极管(OrganicLight Emitting Diode,OLED)具有可靠性高，色域高，亮度高，透明度高，PPI高；且封装要求低，更容易实现柔性及无缝拼接显示，是未来极具有发展潜力的未来显示器。\n\n[0003]相关技术中，Micro LED分为垂直结构和倒装结构，其中倒装结构Micro LED在转移和bonding完后无需上电极制程来实现和阵列基板的电性连接，在后段制程上更加简单。但由于倒装结构Micro LED的电极面积较小，bonding后与阵列基板的接着力较小，在高温高湿或冷热冲击等条件下会更加容易失效。而且随着Micro LED一次性转移面积的增加，bonding过程中加热造成的热膨胀会越大，从而使bonding的精度受到限制。\n\n[0004]因此，现有技术存在缺陷，急需改进。\n\n发明内容\n\n[0005]本申请实施例提供一种阵列基板及阵列基板的制备方法，可以使微型发光二极管与阵列基板的接触面积增大，提高产品良率。\n\n[0006]本申请实施例提供一种阵列基板，包括：\n\n[0007]基板，所述基板包括阵列排布的多个像素单元，每一个所述像素单元包括第一电极及第二电极，所述第一电极及所述第二电极之间存在第一间隔；\n\n[0008]粘接胶，所述粘接胶设置在所述第一间隔处；\n\n[0009]微型发光二极管，所述微型发光二极管设置在所述第一电极、所述第二电极及所述粘接胶上。\n\n[0010]在本申请所述的阵列基板中，所述微型发光二极管包括正电极、负电极及微型发光二极管本体，所述正电极设置在所述第一电极上、所述负电极设置在所述第二电极上。\n\n[0011]在本申请所述的阵列基板中，在所述正电极及所述第一电极之间还设置有至少一第一焊接材料，在所述负电极及所述第二电极之间还设置有至少一第二焊接材料。\n\n[0012]在本申请所述的阵列基板中，所述焊接材料的熔点温度大于所述粘接胶溶液的凝固点温度。\n\n[0013]在本申请所述的阵列基板中，所述粘接胶的水平宽度等于第一间隔的水平宽度。\n\n[0014]在本申请所述的阵列基板中，所述粘接胶的厚度为0.5微米～5微米。\n\n[0015]在本申请所述的阵列基板中，所述粘接胶溶液的凝固点温度为100℃～250℃。\n\n[0016]在本申请所述的阵列基板中，所述粘接胶溶液由环氧类，硅胶类，聚氨酯类，聚丙烯酸类化合物中的任一种组成。\n\n[0017]本申请实施例还提供一种阵列基板的制备方法，包括：\n\n[0018]提供一基板，所述基板包括阵列排布的多个像素单元，每一个所述像素单元包括第一电极及第二电极，所述第一电极及所述第二电极之间存在第一间隔；\n\n[0019]在每个所述第一间隔处滴加粘接胶溶液；\n\n[0020]将微型发光二极管转移至所述第一电极及所述第二电极上；\n\n[0021]固化所述粘接胶溶液，以使所述微型发光二极管通过所述粘接胶连接基板。\n\n[0022]在本申请所述的阵列基板的制备方法中，所述将微型发光二极管转移至所述第一电极及所述第二电极上的步骤，包括：\n\n[0023]将所述微型发光二极管的正电极与所述第一电极电性连接，将所述微型发光二极管的负电极与所述第二电极电性连接。\n\n[0024]本申请实施例提供的阵列基板，包括：基板，所述基板包括多个间隔排布的电极组，所述多个电极组中每一电极组包括第一电极及第二电极，所述第一电极及所述第二电极之间存在第一间隔；粘接胶，所述粘接胶设置在所述第一间隔处；微型发光二极管，所述微型发光二极管设置在所述第一电极、所述第二电极及所述粘接胶上，可以使微型发光二极管与阵列基板的接触面积增大，避免微型发光二极管在高温高湿或冷热冲击等条件下会更加容易失效，提高产品良率。\n\n附图说明\n\n[0025]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0026]图1为本申请实施例提供的阵列基板的制备方法的流程示意图。\n\n[0027]图2为本申请实施例提供的阵列基板的第一中间产物图。\n\n[0028]图3为本申请实施例提供的阵列基板的第二中间产物图。\n\n[0029]图4为本申请实施例提供的阵列基板的第三中间产物图。\n\n[0030]图5为本申请实施例提供的阵列基板的第四中间产物图。\n\n[0031]图6为本申请实施例提供的阵列基板的结构示意图。\n\n具体实施方式\n\n[0032]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0033]请参阅图1，图1为本申请实施例提供的阵列基板100的制备方法的流程示意图，包括：\n\n[0034]步骤110、提供一基板10，所述基板10包括阵列排布的多个像素单元20，每一个所述像素单元20包括第一电极201及第二电极202，所述第一电极201及所述第二电极202之间存在第一间隔W1；\n\n[0035]具体的，如图2所示，图2为本申请实施例提供的阵列基板100的第一中间产物图。该阵列基板100包括：基底10以及在基底10上依次形成的第一金属层12、第一绝缘层13、有源层14、栅绝缘层15、栅极16、第二绝缘层17、源漏极18、平坦层19及像素电极20。\n\n[0036]其中，像素电极20包括第一电极201及第二电极202，第一电极201与第二电极202之间的间隔即为第一间隔W1。\n\n[0037]具体的，请参阅图3，图3为本申请实施例提供的阵列基板100的第二中间产物图，图3为图2中阵列基板的俯视图100。以3T1C电路为例，阵列基板100包括数据线101、传感线102、第一薄膜晶体管(T1)103、第二薄膜晶体管(T2)104、第三薄膜晶体管(T3)105以及电容(Cs)106。像素电极20在3T1C电路的下方。\n\n[0038]其中，所述基板10一般为聚二甲基硅氧烷(polydimethylsiloxane，PDMS)等聚合物材料组成的薄膜晶体管(Thin Film Transistor，TFT)背板，热膨胀系数较高，呈惰性。第一电极201及第二电极202一般为TFT背板上的透明像素电极。\n\n[0039]步骤120、在每个所述第一间隔W1处滴加粘接胶溶液30；\n\n[0040]这里，请参阅图4，图4为本申请实施例提供的阵列基板100的第三中间产物图，图4为图3的阵列基板100在AA方向上的剖面示意图。可以看出，这里是通过一设置有多个凸起的点胶头401的第一载板400向第一电极201与第二电极202之间的第一间隔W1处滴加粘接胶溶液30，所述粘接胶溶液30的凝固点温度为100℃～250℃，所述粘接胶溶液30由环氧类，硅胶类，聚氨酯类，聚丙烯酸类化合物中的任一种组成。\n\n[0041]相邻点胶头401之间的间距等于相邻电极组20之间的间距与第一电极201以及第二电极202的宽度之和，以保证所述第一载板400上的每一点胶头401均能对准所述第一间隔W1处。\n\n[0042]当然，这里也可以通过一个点胶头401分别多每一组电极组20中的第一间隔W1处滴加，这里形成的粘接胶30的方式不仅限于滴加，也可以为涂布或其他方式，这里不做限定。\n\n[0043]步骤130、将微型发光二极管40转移至所述第一电极201及所述第二电极202上；\n\n[0044]具体的，如图5所示，图5为本申请实施例提供的阵列基板100的第四中间产物图。\n\n[0045]可以通过一承载有多个微型发光二极管40的第二载板500将微型发光二极管40转移至所述第一电极201及所述第二电极202上。可以看出，通过第二载板500运送的所述多个微型发光二极管50中每一微型发光二极管50均放置在其所对应的一组电极组20上。\n\n[0046]这里，微型发光二极管40包括：正电极41、负电极42及微型发光二极管本体42，所述正电极41设置在所述第一电极201上、所述负电极42设置在所述第二电极202上。因此，将微型发光二极管40转移至所述第一电极201及所述第二电极202上的步骤，包括：\n\n[0047]将所述微型发光二极管40的正电极41与所述第一电极201电性连接，将所述微型发光二极管40的负电极42与所述第二电极201电性连接。\n\n[0048]具体的焊接方式是通过设置在所述正电极41与所述第一电极201之间的至少一第一焊接材料51焊接，负电极42与所述第二电极202之间的焊接方式是通过设置在所述负电极42与所述第二电极202之间的至少一第二焊接材料52焊接，第一焊接材料51及第二焊接材料52可以在形成所述第一电极201及第二电极202后分别设置在第一电极201及第二电极202上，其中，第一焊接材料51及第二焊接材料52为导电材料。\n\n[0049]其中，所述焊接材料40的熔点温度大于所述粘接胶溶液30的凝固点温度。\n\n[0050]步骤140、固化所述粘接胶溶液30，以使所述微型发光二极管40通过粘接胶连接基板10。\n\n[0051]具体的，这里固化所述粘接胶溶液30具体的做法包括但不限于：对滴加的粘接胶溶液30进行高温固化处理，以使所述粘接胶溶液30形成固体形态的粘接胶。\n\n[0052]形成的所述固体形态的粘接胶的厚度为0.5微米～5微米，且所述粘接胶的水平宽度W2等于所述第一间隔W1的水平宽度。\n\n[0053]因此，如图6所示，图6为本申请实施例提供的阵列基板100的结构示意图，图5为图4的局部放大图，由如上所述的阵列基板的制备方法制备的阵列基板100，包括：\n\n[0054]基板10，所述基板10包括阵列排布的多个像素单元20，每一个所述像素单元20包括第一电极201及第二电极202，所述第一电极201及所述第二电极202之间存在第一间隔W1；\n\n[0055]粘接胶，所述粘接胶设置在所述第一间隔W1处；\n\n[0056]微型发光二极管40，所述微型发光二极管40设置在所述第一电极201、所述第二电极202及所述粘接胶上。\n\n[0057]本申请实施例提供的阵列基板，包括：基板，所述基板包括阵列排布的多个像素单元，每一个所述像素单元包括第一电极及第二电极，所述第一电极及所述第二电极之间存在第一间隔；粘接胶，所述粘接胶设置在所述第一间隔处；微型发光二极管，所述微型发光二极管设置在所述第一电极、所述第二电极及所述粘接胶上，可以使微型发光二极管与阵列基板的接触面积增大，避免微型发光二极管在高温高湿或冷热冲击等条件下会更加容易失效，提高产品良率，可以使微型发光二极管与阵列基板的接触面积增大，避免微型发光二极管在高温高湿或冷热冲击等条件下会更加容易失效，提高产品良率。\n\n[0058]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0059]以上对本申请实施例所提供的一种阵列基板及阵列基板的制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种阵列基板及其制备方法。\n\n背景技术\n\n[0002]近年来，微型发光二极管(Micro LED)显示器相比有机发光二极管(OrganicLight Emitting Diode,OLED)具有可靠性高，色域高，亮度高，透明度高，PPI高；且封装要求低，更容易实现柔性及无缝拼接显示，是未来极具有发展潜力的未来显示器。\n\n[0003]相关技术中，Micro LED分为垂直结构和倒装结构，其中倒装结构Micro LED在转移和bonding完后无需上电极制程来实现和阵列基板的电性连接，在后段制程上更加简单。但由于倒装结构Micro LED的电极面积较小，bonding后与阵列基板的接着力较小，在高温高湿或冷热冲击等条件下会更加容易失效。而且随着Micro LED一次性转移面积的增加，bonding过程中加热造成的热膨胀会越大，从而使bonding的精度受到限制。\n\n[0004]因此，现有技术存在缺陷，急需改进。\n\n发明内容\n\n[0005]本申请实施例提供一种阵列基板及阵列基板的制备方法，可以使微型发光二极管与阵列基板的接触面积增大，提高产品良率。\n\n[0006]本申请实施例提供一种阵列基板，包括：\n\n[0007]基板，所述基板包括阵列排布的多个像素单元，每一个所述像素单元包括第一电极及第二电极，所述第一电极及所述第二电极之间存在第一间隔；\n\n[0008]粘接胶，所述粘接胶设置在所述第一间隔处；\n\n[0009]微型发光二极管，所述微型发光二极管设置在所述第一电极、所述第二电极及所述粘接胶上。\n\n[0010]在本申请所述的阵列基板中，所述微型发光二极管包括正电极、负电极及微型发光二极管本体，所述正电极设置在所述第一电极上、所述负电极设置在所述第二电极上。\n\n[0011]在本申请所述的阵列基板中，在所述正电极及所述第一电极之间还设置有至少一第一焊接材料，在所述负电极及所述第二电极之间还设置有至少一第二焊接材料。\n\n[0012]在本申请所述的阵列基板中，所述焊接材料的熔点温度大于所述粘接胶溶液的凝固点温度。\n\n[0013]在本申请所述的阵列基板中，所述粘接胶的水平宽度等于第一间隔的水平宽度。\n\n[0014]在本申请所述的阵列基板中，所述粘接胶的厚度为0.5微米～5微米。\n\n[0015]在本申请所述的阵列基板中，所述粘接胶溶液的凝固点温度为100℃～250℃。\n\n[0016]在本申请所述的阵列基板中，所述粘接胶溶液由环氧类，硅胶类，聚氨酯类，聚丙烯酸类化合物中的任一种组成。\n\n[0017]本申请实施例还提供一种阵列基板的制备方法，包括：\n\n[0018]提供一基板，所述基板包括阵列排布的多个像素单元，每一个所述像素单元包括第一电极及第二电极，所述第一电极及所述第二电极之间存在第一间隔；\n\n[0019]在每个所述第一间隔处滴加粘接胶溶液；\n\n[0020]将微型发光二极管转移至所述第一电极及所述第二电极上；\n\n[0021]固化所述粘接胶溶液，以使所述微型发光二极管通过所述粘接胶连接基板。\n\n[0022]在本申请所述的阵列基板的制备方法中，所述将微型发光二极管转移至所述第一电极及所述第二电极上的步骤，包括：\n\n[0023]将所述微型发光二极管的正电极与所述第一电极电性连接，将所述微型发光二极管的负电极与所述第二电极电性连接。\n\n[0024]本申请实施例提供的阵列基板，包括：基板，所述基板包括多个间隔排布的电极组，所述多个电极组中每一电极组包括第一电极及第二电极，所述第一电极及所述第二电极之间存在第一间隔；粘接胶，所述粘接胶设置在所述第一间隔处；微型发光二极管，所述微型发光二极管设置在所述第一电极、所述第二电极及所述粘接胶上，可以使微型发光二极管与阵列基板的接触面积增大，避免微型发光二极管在高温高湿或冷热冲击等条件下会更加容易失效，提高产品良率。\n\n附图说明\n\n[0025]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0026]图1为本申请实施例提供的阵列基板的制备方法的流程示意图。\n\n[0027]图2为本申请实施例提供的阵列基板的第一中间产物图。\n\n[0028]图3为本申请实施例提供的阵列基板的第二中间产物图。\n\n[0029]图4为本申请实施例提供的阵列基板的第三中间产物图。\n\n[0030]图5为本申请实施例提供的阵列基板的第四中间产物图。\n\n[0031]图6为本申请实施例提供的阵列基板的结构示意图。\n\n具体实施方式\n\n[0032]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0033]请参阅图1，图1为本申请实施例提供的阵列基板100的制备方法的流程示意图，包括：\n\n[0034]步骤110、提供一基板10，所述基板10包括阵列排布的多个像素单元20，每一个所述像素单元20包括第一电极201及第二电极202，所述第一电极201及所述第二电极202之间存在第一间隔W1；\n\n[0035]具体的，如图2所示，图2为本申请实施例提供的阵列基板100的第一中间产物图。该阵列基板100包括：基底10以及在基底10上依次形成的第一金属层12、第一绝缘层13、有源层14、栅绝缘层15、栅极16、第二绝缘层17、源漏极18、平坦层19及像素电极20。\n\n[0036]其中，像素电极20包括第一电极201及第二电极202，第一电极201与第二电极202之间的间隔即为第一间隔W1。\n\n[0037]具体的，请参阅图3，图3为本申请实施例提供的阵列基板100的第二中间产物图，图3为图2中阵列基板的俯视图100。以3T1C电路为例，阵列基板100包括数据线101、传感线102、第一薄膜晶体管(T1)103、第二薄膜晶体管(T2)104、第三薄膜晶体管(T3)105以及电容(Cs)106。像素电极20在3T1C电路的下方。\n\n[0038]其中，所述基板10一般为聚二甲基硅氧烷(polydimethylsiloxane，PDMS)等聚合物材料组成的薄膜晶体管(Thin Film Transistor，TFT)背板，热膨胀系数较高，呈惰性。第一电极201及第二电极202一般为TFT背板上的透明像素电极。\n\n[0039]步骤120、在每个所述第一间隔W1处滴加粘接胶溶液30；\n\n[0040]这里，请参阅图4，图4为本申请实施例提供的阵列基板100的第三中间产物图，图4为图3的阵列基板100在AA方向上的剖面示意图。可以看出，这里是通过一设置有多个凸起的点胶头401的第一载板400向第一电极201与第二电极202之间的第一间隔W1处滴加粘接胶溶液30，所述粘接胶溶液30的凝固点温度为100℃～250℃，所述粘接胶溶液30由环氧类，硅胶类，聚氨酯类，聚丙烯酸类化合物中的任一种组成。\n\n[0041]相邻点胶头401之间的间距等于相邻电极组20之间的间距与第一电极201以及第二电极202的宽度之和，以保证所述第一载板400上的每一点胶头401均能对准所述第一间隔W1处。\n\n[0042]当然，这里也可以通过一个点胶头401分别多每一组电极组20中的第一间隔W1处滴加，这里形成的粘接胶30的方式不仅限于滴加，也可以为涂布或其他方式，这里不做限定。\n\n[0043]步骤130、将微型发光二极管40转移至所述第一电极201及所述第二电极202上；\n\n[0044]具体的，如图5所示，图5为本申请实施例提供的阵列基板100的第四中间产物图。\n\n[0045]可以通过一承载有多个微型发光二极管40的第二载板500将微型发光二极管40转移至所述第一电极201及所述第二电极202上。可以看出，通过第二载板500运送的所述多个微型发光二极管50中每一微型发光二极管50均放置在其所对应的一组电极组20上。\n\n[0046]这里，微型发光二极管40包括：正电极41、负电极42及微型发光二极管本体42，所述正电极41设置在所述第一电极201上、所述负电极42设置在所述第二电极202上。因此，将微型发光二极管40转移至所述第一电极201及所述第二电极202上的步骤，包括：\n\n[0047]将所述微型发光二极管40的正电极41与所述第一电极201电性连接，将所述微型发光二极管40的负电极42与所述第二电极201电性连接。\n\n[0048]具体的焊接方式是通过设置在所述正电极41与所述第一电极201之间的至少一第一焊接材料51焊接，负电极42与所述第二电极202之间的焊接方式是通过设置在所述负电极42与所述第二电极202之间的至少一第二焊接材料52焊接，第一焊接材料51及第二焊接材料52可以在形成所述第一电极201及第二电极202后分别设置在第一电极201及第二电极202上，其中，第一焊接材料51及第二焊接材料52为导电材料。\n\n[0049]其中，所述焊接材料40的熔点温度大于所述粘接胶溶液30的凝固点温度。\n\n[0050]步骤140、固化所述粘接胶溶液30，以使所述微型发光二极管40通过粘接胶连接基板10。\n\n[0051]具体的，这里固化所述粘接胶溶液30具体的做法包括但不限于：对滴加的粘接胶溶液30进行高温固化处理，以使所述粘接胶溶液30形成固体形态的粘接胶。\n\n[0052]形成的所述固体形态的粘接胶的厚度为0.5微米～5微米，且所述粘接胶的水平宽度W2等于所述第一间隔W1的水平宽度。\n\n[0053]因此，如图6所示，图6为本申请实施例提供的阵列基板100的结构示意图，图5为图4的局部放大图，由如上所述的阵列基板的制备方法制备的阵列基板100，包括：\n\n[0054]基板10，所述基板10包括阵列排布的多个像素单元20，每一个所述像素单元20包括第一电极201及第二电极202，所述第一电极201及所述第二电极202之间存在第一间隔W1；\n\n[0055]粘接胶，所述粘接胶设置在所述第一间隔W1处；\n\n[0056]微型发光二极管40，所述微型发光二极管40设置在所述第一电极201、所述第二电极202及所述粘接胶上。\n\n[0057]本申请实施例提供的阵列基板，包括：基板，所述基板包括阵列排布的多个像素单元，每一个所述像素单元包括第一电极及第二电极，所述第一电极及所述第二电极之间存在第一间隔；粘接胶，所述粘接胶设置在所述第一间隔处；微型发光二极管，所述微型发光二极管设置在所述第一电极、所述第二电极及所述粘接胶上，可以使微型发光二极管与阵列基板的接触面积增大，避免微型发光二极管在高温高湿或冷热冲击等条件下会更加容易失效，提高产品良率，可以使微型发光二极管与阵列基板的接触面积增大，避免微型发光二极管在高温高湿或冷热冲击等条件下会更加容易失效，提高产品良率。\n\n[0058]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0059]以上对本申请实施例所提供的一种阵列基板及阵列基板的制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10709, 23763, '技术领域\n\n[0001]本发明涉及显示技术领域，具体为一种背光模组、显示装置。\n\n背景技术\n\n[0002]随着液晶显示技术的发展，特别是全面屏技术的发展，将显示装置的背光模组(BLU)下边界做到极致窄，有利于提升显示区的屏占比。\n\n[0003]现有技术中，背光模组1a一般包括LED光源10a、背板11a、反射片12a、导光板13a、扩散片14a、增光片15a、遮光胶带16a等结构。其结构图可见图1、图2所示。图1中是光源的灯板(FPC板)反装结构，图2中是光源的灯板(FPC板)侧装结构，现有技术中的光源，采用LED灯为发光结构，其尺寸较大，混光距离较大，因此，需要占用较大的空间。\n\n[0004]如表1所示，表1为侧装结构背光模组1a、反装结构的背光模组1a的各项参数。\n\n[0005]\n\n[0006]表1中，光源规格是指单个LED的尺寸规格，为行业内的标准规格，LED前后距离为LED出光面到灯板表面的距离，Chip Pitch为两个相邻LED之间的距离。同时参见图1和表1，B1的距离需要达到0.7mm以上，C1需要达到1mm以上，造成显示区的范围缩小，而边框宽度(A1与D1之和)过宽，边框宽度基本超过了2mm。同样的，同时参见图2和表1，B2的距离需要达到0.9mm以上，C1的距离需要达到0.95mm以上，造成显示区的范围缩小，而边框宽度(A2与D2之和)过宽，边框宽度基本超过了1.8mm。因此，需要设计一款新的背光模组，以减小边框宽度，提高显示区的屏占比。\n\n发明内容\n\n[0007]为解决上述技术问题：本发明提供一种背光模组、显示装置，通过利用miniLED光源作为新的光源，减小光源的尺寸和混光距离，以进一步减小边框的总宽度，提高显示区的屏占比。\n\n[0008]解决上述问题的技术方案是：本发明提供一种背光模组，包括背板，包括一底板和垂直连接至所述底板的边侧的侧板；反射片，设于所述底板上；导光板，设于所述反射片上，所述导光板朝向所述底板的一面为入光面；miniLED光源，包括一出光面，所述miniLED光源贴覆于所述底板上，且所述miniLED光源的出光面紧贴于所述导光板的入光面。\n\n[0009]在本发明一实施例中，所述miniLED光源远离所述侧板的一侧与所述侧板的距离小于等于0.5mm。\n\n[0010]在本发明一实施例中，所述miniLED光源包括灯板；miniLED灯，设于所述灯板上；透明封装胶层，设于所述灯板具有所述miniLED灯的一面且覆盖所述miniLED灯。\n\n[0011]在本发明一实施例中，所述灯板的厚度小于等于0.1mm，所述灯板的宽度范围为0.2mm-0.5mm；所述透明封装胶层的厚度小于等于0.4mm。\n\n[0012]在本发明一实施例中，所述底板包括第一板体，所述反射片设于所述第一板体上；第一弯折部，其一侧连接于所述第一板体朝向侧板的一侧，所述第一弯折部的另一侧向远离所述导光板的一侧弯折；第二板体，其一侧连接至所述第一弯折部的另一侧，所述第二板体的另一侧垂直连接至所述侧板；所述第二板体、所述第一弯折部、所述侧板以及所述导光板围成一容纳所述miniLED光源的容纳腔。\n\n[0013]在本发明一实施例中，所述侧板包括侧板本体，其一侧垂直连接至所述第二板体；第二弯折部，其一侧连接至所述侧板本体的另一侧，所述第二弯折部的另一侧向所述导光板的上方弯折；所述背板还包括顶板，所述顶板的一侧连接至所述第二弯折部的另一侧。\n\n[0014]在本发明一实施例中，所述的背光模组还包括扩散片，设于所述导光板上；功能膜片，设于所述扩散片上，且与所述顶板同层设置。\n\n[0015]在本发明一实施例中，所述的背光模组还包括遮光胶带，设于所述功能膜片上，所述遮光胶带的一侧延伸至所述顶板上。\n\n[0016]在本发明一实施例中，所述遮光胶带远离所述顶板的一侧到所述miniLED光源远离所述侧板的一侧的距离小于等于0.9mm。\n\n[0017]在本发明一实施例中，所述的背光模组还包括黑色单面胶，包覆于所述底板、所述侧板和所述遮光胶带上。\n\n[0018]本发明还提供了一种显示装置，包括所述的背光模组。\n\n[0019]本发明的有益效果是：本发明的背光模组、显示装置，本发明的背光模组为反装结构，通过利用miniLED光源代替现有技术中的支架灯或者COB光源，减小了光源的尺寸，有效减小了miniLED光源远离所述侧板的一侧与所述侧板的距离，即B值；以及减小了遮光胶带远离顶板的一侧到miniLED光源远离侧板的一侧的距离，从而减小了混光距离，进一步减小边框的总宽度，有效地提高了显示区的屏占比。\n\n附图说明\n\n[0020]下面结合附图和实施例对本发明作进一步解释。\n\n[0021]图1是现有技术中反装结构的背光模组结构图。\n\n[0022]图2是现有技术中侧装结构的背光模组结构图。\n\n[0023]图3是本发明实施例的背光模组结构图。\n\n[0024]图4是本发明实施例的miniLED光源结构图。\n\n[0025]附图标记：\n\n[0026]1、1a背光模组；\n\n[0027]100显示装置； 1001显示区；\n\n[0028]10a LED光源； 11a背板；\n\n[0029]12a反射片； 13a导光板；\n\n[0030]14a扩散片； 15a增光片；\n\n[0031]16a遮光胶带；\n\n[0032]10 miniLED光源； 11背板；\n\n[0033]12反射片； 13导光板；\n\n[0034]14扩散片； 15功能膜片；\n\n[0035]16遮光胶带； 17黑色单面胶；\n\n[0036]18容纳腔；\n\n[0037]101灯板； 102miniLED灯；\n\n[0038]103透明封装胶层； 111底板；\n\n[0039]112侧板； 113顶板；\n\n[0040]1111第一板体； 1112第一弯折部；\n\n[0041]1113第二板体； 1121侧板本体；\n\n[0042]1122第二弯折部。\n\n具体实施方式\n\n[0043]以下实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「顶」、「底」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。\n\n[0044]如图3所示，在一实施例中，本发明的背光模组1，包括miniLED光源10、背板11、反射片12、导光板13、扩散片14、功能膜片15、遮光胶带16、黑色单面胶17。\n\n[0045]如图4所示，所述miniLED光源10包括灯板101、miniLED灯102、透明封装胶层103。其中所述灯板101为FPC灯板101，所述灯板101的厚度小于等于0.1mm，其宽度在0.2mm-0.5mm。所述miniLED灯102分布在所述灯板101上，所有的miniLED灯102成线形分布，其中相邻的两个miniLED灯102之间的距离小于等于5mm，本实施例中，优选为0.5mm至1.1mm之间。所述透明封装胶层103设置在所述灯板101具有miniLED灯102的一面，并覆盖miniLED灯102。所述透明封装胶层103的厚度小于等于0.3mm，优选为0.1mm-0.2mm。所述透明封装胶层103远离所述灯板101的一面为出光面，所述出光面的宽度为0.2mm-0.5mm。\n\n[0046]参见图3所示，所述背板11为金属背板，包括一底板111、一侧板112和一顶板113，其中所述侧板112垂直连接至所述底板111的边侧，所述底板111和顶板113平行设置。所述背板11的厚度一般在0.1mm±0.02mm。具体的，所述底板111包括第一板体1111、第一弯折部1112、第二板体1113。所述第一弯折部1112的一侧连接于所述第一板体1111朝向侧板112的一侧，所述第一弯折部1112的另一侧向远离所述导光板13的一侧弯折；所述第二板体1113的一侧连接至所述第一弯折部1112的另一侧，所述第二板体1113的另一侧垂直连接至所述侧板112。所述侧板112包括侧板本体1121、第二弯折部1122，所述侧板本体1121的一侧垂直连接至所述第二板体1113；所述第二弯折部1122的一侧连接至所述侧板本体1121的另一侧，所述第二弯折部1122的另一侧向所述导光板13的上方弯折；所述顶板113的一侧连接至所述第二弯折部1122的另一侧。\n\n[0047]参见图3所示，所述反射片12设于所述第一板体1111上。所述导光板13设于所述反射片12上，所述导光板13朝向所述底板111的一面为入光面。所述第二板体1113、所述第一弯折部1112、所述侧板112以及所述导光板13围成一容纳所述miniLED光源10的容纳腔18。\n\n[0048]参见图3所示，所述miniLED光源10的灯板101贴覆于所述底板111上，本实施例中，所述灯板101通过胶水或者双面胶粘接在所述第二板体1113上，且所述miniLED光源10的出光面紧贴于所述导光板13的入光面。\n\n[0049]如图3所示，所述miniLED光源10远离所述侧板112的一侧与所述侧板112的距离小于等于0.6mm，即B值小于等于0.6mm，本实施例中，B值为0.35mm，那么在本实施例所用的所述透明封装胶层103的宽度可选择0.3mm，所述灯板101的宽度也可以选择0.3mm。\n\n[0050]由此可见，本实施例中的B值远远小于现有技术中的B1值或B2值。\n\n[0051]参见图3所示，所述扩散片14设于所述导光板13上；所述功能膜片15设于所述扩散片14上，且与所述顶板113同层设置。所述功能膜片15可以包括棱镜片、增光片，所述棱镜片和增光片叠层设置。\n\n[0052]参见图3所示，所述遮光胶带16设于所述功能膜片15上，所述遮光胶带16的一侧延伸至所述顶板113上。所述黑色单面胶17包覆于所述底板111、所述侧板112和所述遮光胶带16上。\n\n[0053]参见图3所示，所述遮光胶带16远离所述顶板113的一侧到所述miniLED光源10远离所述侧板112的一侧的距离小于等于0.9mm，即图3中，C值小于等于0.9mm。因此，本实施例中，所述C值远远小于现有技术中的所述C1值和所述C2值，所述遮光胶带16整体的宽度远远小于现有技术中的遮光胶带16的宽度。由此可见，本实施例中背光模组1的边框宽度要远远小于现有技术中的边框宽度，即边框宽度即图3中所示的D值与A值之和，所述D值为B值和C值的之和，本实施例中D值为小于等于1.45mm。而所述A值为背板11的厚度和遮光胶带16的厚度之和，所述背板11的厚度和遮光胶带16的厚度一般难以在原有基础上进行减薄，因此，与现有技术相比，在所述B值和所述C值进行有效减小之后，所述D值也有效的减小了，从而在现有技术的基础上，进一步减小了边框的总宽度，有效提高了显示区1001的屏占比。\n\n[0054]参见图3所示，本发明还提供了一种显示装置100，包括所述的背光模组1。本案的设计要点在于背光模组1，置于显示装置的其他器件，如阵列基板、彩膜基板等就不再一一赘述。\n\n[0055]以上仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。', '技术领域\n\n[0001]本发明涉及显示技术领域，具体为一种背光模组、显示装置。\n\n背景技术\n\n[0002]随着液晶显示技术的发展，特别是全面屏技术的发展，将显示装置的背光模组(BLU)下边界做到极致窄，有利于提升显示区的屏占比。\n\n[0003]现有技术中，背光模组1a一般包括LED光源10a、背板11a、反射片12a、导光板13a、扩散片14a、增光片15a、遮光胶带16a等结构。其结构图可见图1、图2所示。图1中是光源的灯板(FPC板)反装结构，图2中是光源的灯板(FPC板)侧装结构，现有技术中的光源，采用LED灯为发光结构，其尺寸较大，混光距离较大，因此，需要占用较大的空间。\n\n[0004]如表1所示，表1为侧装结构背光模组1a、反装结构的背光模组1a的各项参数。\n\n[0005]\n\n[0006]表1中，光源规格是指单个LED的尺寸规格，为行业内的标准规格，LED前后距离为LED出光面到灯板表面的距离，Chip Pitch为两个相邻LED之间的距离。同时参见图1和表1，B1的距离需要达到0.7mm以上，C1需要达到1mm以上，造成显示区的范围缩小，而边框宽度(A1与D1之和)过宽，边框宽度基本超过了2mm。同样的，同时参见图2和表1，B2的距离需要达到0.9mm以上，C1的距离需要达到0.95mm以上，造成显示区的范围缩小，而边框宽度(A2与D2之和)过宽，边框宽度基本超过了1.8mm。因此，需要设计一款新的背光模组，以减小边框宽度，提高显示区的屏占比。\n\n发明内容\n\n[0007]为解决上述技术问题：本发明提供一种背光模组、显示装置，通过利用miniLED光源作为新的光源，减小光源的尺寸和混光距离，以进一步减小边框的总宽度，提高显示区的屏占比。\n\n[0008]解决上述问题的技术方案是：本发明提供一种背光模组，包括背板，包括一底板和垂直连接至所述底板的边侧的侧板；反射片，设于所述底板上；导光板，设于所述反射片上，所述导光板朝向所述底板的一面为入光面；miniLED光源，包括一出光面，所述miniLED光源贴覆于所述底板上，且所述miniLED光源的出光面紧贴于所述导光板的入光面。\n\n[0009]在本发明一实施例中，所述miniLED光源远离所述侧板的一侧与所述侧板的距离小于等于0.5mm。\n\n[0010]在本发明一实施例中，所述miniLED光源包括灯板；miniLED灯，设于所述灯板上；透明封装胶层，设于所述灯板具有所述miniLED灯的一面且覆盖所述miniLED灯。\n\n[0011]在本发明一实施例中，所述灯板的厚度小于等于0.1mm，所述灯板的宽度范围为0.2mm-0.5mm；所述透明封装胶层的厚度小于等于0.4mm。\n\n[0012]在本发明一实施例中，所述底板包括第一板体，所述反射片设于所述第一板体上；第一弯折部，其一侧连接于所述第一板体朝向侧板的一侧，所述第一弯折部的另一侧向远离所述导光板的一侧弯折；第二板体，其一侧连接至所述第一弯折部的另一侧，所述第二板体的另一侧垂直连接至所述侧板；所述第二板体、所述第一弯折部、所述侧板以及所述导光板围成一容纳所述miniLED光源的容纳腔。\n\n[0013]在本发明一实施例中，所述侧板包括侧板本体，其一侧垂直连接至所述第二板体；第二弯折部，其一侧连接至所述侧板本体的另一侧，所述第二弯折部的另一侧向所述导光板的上方弯折；所述背板还包括顶板，所述顶板的一侧连接至所述第二弯折部的另一侧。\n\n[0014]在本发明一实施例中，所述的背光模组还包括扩散片，设于所述导光板上；功能膜片，设于所述扩散片上，且与所述顶板同层设置。\n\n[0015]在本发明一实施例中，所述的背光模组还包括遮光胶带，设于所述功能膜片上，所述遮光胶带的一侧延伸至所述顶板上。\n\n[0016]在本发明一实施例中，所述遮光胶带远离所述顶板的一侧到所述miniLED光源远离所述侧板的一侧的距离小于等于0.9mm。\n\n[0017]在本发明一实施例中，所述的背光模组还包括黑色单面胶，包覆于所述底板、所述侧板和所述遮光胶带上。\n\n[0018]本发明还提供了一种显示装置，包括所述的背光模组。\n\n[0019]本发明的有益效果是：本发明的背光模组、显示装置，本发明的背光模组为反装结构，通过利用miniLED光源代替现有技术中的支架灯或者COB光源，减小了光源的尺寸，有效减小了miniLED光源远离所述侧板的一侧与所述侧板的距离，即B值；以及减小了遮光胶带远离顶板的一侧到miniLED光源远离侧板的一侧的距离，从而减小了混光距离，进一步减小边框的总宽度，有效地提高了显示区的屏占比。\n\n附图说明\n\n[0020]下面结合附图和实施例对本发明作进一步解释。\n\n[0021]图1是现有技术中反装结构的背光模组结构图。\n\n[0022]图2是现有技术中侧装结构的背光模组结构图。\n\n[0023]图3是本发明实施例的背光模组结构图。\n\n[0024]图4是本发明实施例的miniLED光源结构图。\n\n[0025]附图标记：\n\n[0026]1、1a背光模组；\n\n[0027]100显示装置； 1001显示区；\n\n[0028]10a LED光源； 11a背板；\n\n[0029]12a反射片； 13a导光板；\n\n[0030]14a扩散片； 15a增光片；\n\n[0031]16a遮光胶带；\n\n[0032]10 miniLED光源； 11背板；\n\n[0033]12反射片； 13导光板；\n\n[0034]14扩散片； 15功能膜片；\n\n[0035]16遮光胶带； 17黑色单面胶；\n\n[0036]18容纳腔；\n\n[0037]101灯板； 102miniLED灯；\n\n[0038]103透明封装胶层； 111底板；\n\n[0039]112侧板； 113顶板；\n\n[0040]1111第一板体； 1112第一弯折部；\n\n[0041]1113第二板体； 1121侧板本体；\n\n[0042]1122第二弯折部。\n\n具体实施方式\n\n[0043]以下实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「顶」、「底」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。\n\n[0044]如图3所示，在一实施例中，本发明的背光模组1，包括miniLED光源10、背板11、反射片12、导光板13、扩散片14、功能膜片15、遮光胶带16、黑色单面胶17。\n\n[0045]如图4所示，所述miniLED光源10包括灯板101、miniLED灯102、透明封装胶层103。其中所述灯板101为FPC灯板101，所述灯板101的厚度小于等于0.1mm，其宽度在0.2mm-0.5mm。所述miniLED灯102分布在所述灯板101上，所有的miniLED灯102成线形分布，其中相邻的两个miniLED灯102之间的距离小于等于5mm，本实施例中，优选为0.5mm至1.1mm之间。所述透明封装胶层103设置在所述灯板101具有miniLED灯102的一面，并覆盖miniLED灯102。所述透明封装胶层103的厚度小于等于0.3mm，优选为0.1mm-0.2mm。所述透明封装胶层103远离所述灯板101的一面为出光面，所述出光面的宽度为0.2mm-0.5mm。\n\n[0046]参见图3所示，所述背板11为金属背板，包括一底板111、一侧板112和一顶板113，其中所述侧板112垂直连接至所述底板111的边侧，所述底板111和顶板113平行设置。所述背板11的厚度一般在0.1mm±0.02mm。具体的，所述底板111包括第一板体1111、第一弯折部1112、第二板体1113。所述第一弯折部1112的一侧连接于所述第一板体1111朝向侧板112的一侧，所述第一弯折部1112的另一侧向远离所述导光板13的一侧弯折；所述第二板体1113的一侧连接至所述第一弯折部1112的另一侧，所述第二板体1113的另一侧垂直连接至所述侧板112。所述侧板112包括侧板本体1121、第二弯折部1122，所述侧板本体1121的一侧垂直连接至所述第二板体1113；所述第二弯折部1122的一侧连接至所述侧板本体1121的另一侧，所述第二弯折部1122的另一侧向所述导光板13的上方弯折；所述顶板113的一侧连接至所述第二弯折部1122的另一侧。\n\n[0047]参见图3所示，所述反射片12设于所述第一板体1111上。所述导光板13设于所述反射片12上，所述导光板13朝向所述底板111的一面为入光面。所述第二板体1113、所述第一弯折部1112、所述侧板112以及所述导光板13围成一容纳所述miniLED光源10的容纳腔18。\n\n[0048]参见图3所示，所述miniLED光源10的灯板101贴覆于所述底板111上，本实施例中，所述灯板101通过胶水或者双面胶粘接在所述第二板体1113上，且所述miniLED光源10的出光面紧贴于所述导光板13的入光面。\n\n[0049]如图3所示，所述miniLED光源10远离所述侧板112的一侧与所述侧板112的距离小于等于0.6mm，即B值小于等于0.6mm，本实施例中，B值为0.35mm，那么在本实施例所用的所述透明封装胶层103的宽度可选择0.3mm，所述灯板101的宽度也可以选择0.3mm。\n\n[0050]由此可见，本实施例中的B值远远小于现有技术中的B1值或B2值。\n\n[0051]参见图3所示，所述扩散片14设于所述导光板13上；所述功能膜片15设于所述扩散片14上，且与所述顶板113同层设置。所述功能膜片15可以包括棱镜片、增光片，所述棱镜片和增光片叠层设置。\n\n[0052]参见图3所示，所述遮光胶带16设于所述功能膜片15上，所述遮光胶带16的一侧延伸至所述顶板113上。所述黑色单面胶17包覆于所述底板111、所述侧板112和所述遮光胶带16上。\n\n[0053]参见图3所示，所述遮光胶带16远离所述顶板113的一侧到所述miniLED光源10远离所述侧板112的一侧的距离小于等于0.9mm，即图3中，C值小于等于0.9mm。因此，本实施例中，所述C值远远小于现有技术中的所述C1值和所述C2值，所述遮光胶带16整体的宽度远远小于现有技术中的遮光胶带16的宽度。由此可见，本实施例中背光模组1的边框宽度要远远小于现有技术中的边框宽度，即边框宽度即图3中所示的D值与A值之和，所述D值为B值和C值的之和，本实施例中D值为小于等于1.45mm。而所述A值为背板11的厚度和遮光胶带16的厚度之和，所述背板11的厚度和遮光胶带16的厚度一般难以在原有基础上进行减薄，因此，与现有技术相比，在所述B值和所述C值进行有效减小之后，所述D值也有效的减小了，从而在现有技术的基础上，进一步减小了边框的总宽度，有效提高了显示区1001的屏占比。\n\n[0054]参见图3所示，本发明还提供了一种显示装置100，包括所述的背光模组1。本案的设计要点在于背光模组1，置于显示装置的其他器件，如阵列基板、彩膜基板等就不再一一赘述。\n\n[0055]以上仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。');
INSERT INTO `os_patent_instruction_text` VALUES (10710, 23764, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示装置及显示装置的制作方法。\n\n背景技术\n\n[0002]随着手机全面屏的普及和消费者对机身一体化的追求，屏下传感技术成为业界开发重点。\n\n[0003]微发光二极管(Micro LED)因超高亮度、高对比度、相应时间快、信耐性好、透明度高等特点被认为是下一代显示装置。有机发光二极管(OrganicLight-Emitting Diode,OLED)和微发光二极管做透明显示时，透过率都比液晶显示装置(Liquid CrystalDisplay,LCD)有优势，但与OLED相比，Micro LED不存在高电流驱动下的寿命问题，故更适合用来作为透明显示。Micro LED能够以更小的像素尺寸达到高亮显示，透过率可达80％，OLED更需要考虑寿命与亮度间的平衡问题，故透过率被限制在50％。因此，现有LCD技术结合Micro LED高穿透特性方案，可共用OLED目前的屏下方案，并可以进一步拓展其他传感方案达成全面屏显示。\n\n[0004]LCD因属于整面背光的被动发光，光学式传感器与光学显示无法在空间上重合，较OLED和Micro LED像素级主动式发光显示存在透过率不足的问题。\n\n[0005]综上所述，现有液晶显示装置存在透过率不足无法实现屏下传感技术的问题。故，有必要提供一种显示装置及显示装置的制作方法来改善这一缺陷。\n\n发明内容\n\n[0006]本揭示实施例提供一种显示装置及显示装置的制作方法，用于解决现有液晶显示装置存在透过率不足无法实现屏下传感技术的问题。\n\n[0007]本揭示实施例提供一种显示装置，包括：\n\n[0008]彩膜基板，包括第一衬底基板和设置于所述第一衬底基板上的彩色滤光层；\n\n[0009]阵列基板，与所述彩膜基板相对设置，包括第二衬底基板、驱动电路层以及显示器件层，所述驱动电路层设置于所述第二衬底基板靠近所述彩膜基板的一侧上，所述显示器件层设置于所述第二衬底基板远离所述彩膜基板的一侧上；\n\n[0010]液晶层，所述液晶层设置于所述阵列基板与所述彩膜基板之间；以及\n\n[0011]传感装置，所述传感装置设置于所述显示器件层远离所述阵列基板的一侧；\n\n[0012]其中，所述显示器件层包括阵列排布的多个子像素单元和像素驱动电路，所述子像素单元包括微发光二极管。\n\n[0013]根据本揭示一实施例，所述显示装置包括显示区域和位于所述显示区域周围的非显示区域，所述显示区域包括第一显示区域和第二显示区域，所述显示器件层在所述第二衬底基板上的正投影区域与所述第一显示区域重叠，所述第二显示区域位于所述第一显示区域周围。\n\n[0014]根据本揭示一实施例，所述彩色滤光层在所述彩膜基板上的正投影区域与所述第二显示区域重叠。\n\n[0015]根据本揭示一实施例，所述彩膜基板远离所述阵列基板的一侧上设有第一偏光片，所述第一偏光片位于所述第一显示区域的部分设有第一通孔。\n\n[0016]根据本揭示一实施例，所述显示装置还包括第二偏光片和背光模组，所述背光模组设置于所述阵列基板远离所述彩膜基板的一侧，所述第二偏光片设置于所述背光模组与所述阵列基板之间，所述第二偏光片在所述第一衬底基板上的正投影区域与所述第一偏光片在所述第一衬底基板上的正投影区域重叠。\n\n[0017]根据本揭示一实施例，所述子像素单元包括发光子区和外部光透射子区，所述微发光二极管设置于所述发光子区内。\n\n[0018]根据本揭示一实施例，所述外部光透射子区的面积大于或等于所述发光子区的面积。\n\n[0019]根据本揭示一实施例，所述显示器件层还包括封装层，所述封装层设置于所述第二衬底基板远离所述驱动电路板的一侧上，并覆盖所述显示器件层。\n\n[0020]根据本揭示一实施例，所述微发光二极管包括红色微发光二极管、绿色微发光二极管和蓝色微发光二极管。\n\n[0021]本揭示实施例还提供一种显示装置的制作方法，包括：\n\n[0022]提供阵列基板，所述阵列基板包括衬底基板和位于所述衬底基板一侧的驱动电路层；\n\n[0023]在所述衬底基板与所述驱动电路层相反的一侧上形成子像素图案和像素驱动电路；\n\n[0024]将微发光二极管放置到相应所述子像素图案；\n\n[0025]通过光刻制程，将所述微发光二极管与所述像素驱动电路连接；以及\n\n[0026]在所述衬底基板远离所述驱动电路层的一侧形成封装层，所述封装层覆盖所述微发光二极管以及所述像素驱动电路。\n\n[0027]本揭示实施例的有益效果：本揭示实施例通过在阵列基板的第二衬底基板与驱动电路相反的一侧上设置显示器件层，并在显示器件层与第二衬底基板相反的一侧设置传感装置，当显示器件层需要显示画面时，子像素单元的微发光二极管自发光实现正常的画面显示，与显示装置的其他显示画面衔接，实现全屏显示的效果；当需要使用传感装置时，微发光二极管不发光，传感装置通过显示器件层进行图形采集成像，实现屏下传感的技术效果。\n\n附图说明\n\n[0028]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是揭示的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0029]图1为本揭示实施例一提供的显示装置的截面结构示意图；\n\n[0030]图2为本揭示实施例一提供的显示器件层的平面结构示意图；\n\n[0031]图3为本揭示实施例一提供的显示器件层的截面结构示意图；\n\n[0032]图4为本揭示实施例一提供的另一种显示装置的截面结构示意图；\n\n[0033]图5为本揭示实施例二提供的显示装置的制作方法的流程示意图。\n\n具体实施方式\n\n[0034]以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。\n\n[0035]下面结合附图和具体实施例对本揭示做进一步的说明：\n\n[0036]实施例一：\n\n[0037]本揭示实施例提供一种显示装置，下面结合图1至图3进行详细说明。\n\n[0038]如图1所示，图1为本揭示实施例提供的显示装置100的截面结构示意图，所述显示装置100包括彩膜基板110、与所述彩膜基板110相对设置的阵列基板120以及设置于所述彩膜基板110和阵列基板120之间的液晶层130。\n\n[0039]具体地，所述彩膜基板110包括第一衬底基板111和设置于所述第一衬底基板111上的彩色滤光层112，所述彩色滤光层112设置于所述第一衬底基板111靠近所述阵列基板120的一侧。所述阵列基板120包括第二衬底基板121、驱动电路层122以及显示器件层123，所述驱动电路层122设置于所述第二衬底基板121靠近所述彩膜基板110的一侧上，所述显示器件层123设置于所述第二衬底基板121远离所述彩膜基板110的一侧上。所述传感装置170设置于所述显示器件层123远离所述阵列基板120的一侧。\n\n[0040]在本实施例中，如图1所示，所述显示装置100包括显示区域和位于所述显示区域周围的非显示区域，所述显示区域包括第一显示区域A1和第二显示区域A2，所述显示器件层123在所述第二衬底基板121上的正投影区域与所述第一显示区域A1重叠，所述第二显示区域A2位于所述第一显示区域A1周围。当所述显示器件层123工作时，所述微发光二极管127发光，所述第一显示区域A1显示所述显示器件层123的显示画面，所述第二显示区域A2显示彩膜基板110、液晶层130和阵列基板120工作所形成的显示画面，两个显示画面衔接，实现全屏显示的显示效果。当传感装置170工作时，显示器件层123停止工作，第一显示区域A1不显示画面，外界光线通过显示器件层123抵达传感装置170，传感装置170进行图像采集成像。\n\n[0041]优选的，所述传感装置170包括屏下摄像装置、面部识别装置、距离感应装置以及指纹识别装置等其中的一种或多种。此外，可以根据第一显示区域A1的面积大小，还可以在所述第一显示区域A1内增设补光灯、呼吸灯以及时间显示等效果。\n\n[0042]优选的，所述第一显示区域A1可以位于显示装置100的显示区域的任意位置，也可以不具有显示作用，仅作为传感装置170获取外界光线的媒介，设置于非显示区域。同样，所述第一显示区域A1的形状也可以是圆形、水滴状、“美人尖”等。\n\n[0043]优选的，所述第一显示区域A1的面积应远小于第二显示区域A2的面积，例如小于或等于20mm*10mm，且所述第一显示区域A1所需要的像素的数量较少，从而可以保证第一显示区域A1微发光二极管的巨量转印良率以及生产成本的控制。\n\n[0044]如图2至图3所示，图2为本揭示实施例提供的显示器件层的平面结构示意图，图3为本揭示实施例提供的显示器件层的截面结构示意图，所述显示器件层123包括阵列排布的多个子像素单元124和像素驱动电路。\n\n[0045]具体地，所述子像素单元124包括发光子区125和外部光透射子区126，所述子像素单元124还包括微发光二极管127，所述微发光二极管设置于所述发光子区125内。所述外部光透射子区126用于为外部光线穿过所述显示器件层123提供途径，从而提升显示器件层123的光线透过率。所述子像素驱动电路设置于所述发光子区125内以及显示器件层123内除子像素单元124以外的其他部分。\n\n[0046]将显示器件层123设置于第二衬底基板121远离彩膜基板110的一侧，可以解决微发光二极管127转移、绑定以及像素驱动电路的制作等高温制程导致的彩膜基板110的色阻不耐高温被破坏的问题，同时，还可以省去液晶盒玻璃和微发光二极管玻璃对组制程，并解决显示器件层123厚度与液晶盒厚度不兼容的问题。\n\n[0047]在本实施例中，所述微发光二极管127包括红色微发光二极管、绿色微发光二极管和蓝色微发光二极管，相邻三个所述子像素单元124组成一个像素。在一些实施例中，所述微发光二极管127也可以全部都是蓝色微发光二极管，此时，蓝色发光二极管作为光源，所述显示器件层123还应包括量子点膜层，所述量子点膜层位于所述微发光二极管127与第二衬底基板121之间，所述量子点膜层在所述蓝色微发光二极管发出的蓝光的激发下，可以产生其他颜色的光，从而实现全彩化的显示效果。当然，在其他的一些实施例中，也可以采用荧光粉或者色彩转换层代替量子点膜层，实现全彩化的显示效果。\n\n[0048]优选的，为防止微发光二极管127的尺寸过大影响显示器件层123的光线透过率，所述微发光二极管127的尺寸大小应小于所述子像素的尺寸大小，具体地，所述微发光二极管的尺寸范围为1μm～500μm，所述子像素单元124的尺寸范围为10μm～1000μm，使得显示器件层123具有良好的透明显示效果，保证传感装置170的屏下传感技术效果。\n\n[0049]优选的，同样为保证显示器件层123的光线透过率，所述外部光透射子区126的面积应大于或等于所述发光子区125的面积，所述第一衬底基板111和所述第二衬底基板121的材料也应当选用高透过率材料，包括玻璃、无色PI、PMMA等。\n\n[0050]如图3所示，所述微发光二极管127为正装微发光二极管芯片结构，所述像素驱动电路包括栅极信号线180和数据信号线181，所述栅极信号线180和数据信号线181分别通过金属线182与微发光二极管127的N pad和P pad相连接，所述微发光二极管127的出光面朝向所述彩膜基板110，可以避免倒装微发光二极管结构导致的基板和芯片电极材料匹配难的问题，可以实现与倒装微发光二极管相同的技术效果。当然，在一些实施例中，所述微发光二极管127也可以为台面微发光二极管芯片结构。\n\n[0051]在一些实施例中，所述像素驱动电路的驱动方式可以为有源寻址驱动或无源寻址驱动，所述有源寻址驱动则包括α-Si、IGZO、LTPS，上述驱动方式均能够实现相同的技术效果，此处不做限定。\n\n[0052]在本实施例中，如图3所示，所述显示器件层123还包括封装层184，所述封装层184设置于所述第二衬底基板121远离所述驱动电路层122的一侧上，并覆盖所述显示器件层123，所述封装层184用于保护所述显示器件层123。\n\n[0053]在本实施例中，所述彩色滤光层112在所述彩膜基板110上的正投影区域与所述第二显示区域A2重叠，因此，所述彩色滤光层112在所述第一显示区域A1的部分形成一通孔，所述通孔的形状与所述显示器件层123相同，可以减少彩色滤光层112对外界光线的影响，提升彩膜基板110的光线透过率。\n\n[0054]在本实施例中，所述彩膜基板110远离所述阵列基板120的一侧上设有第一偏光片140，所述第一偏光片140用于第二显示区域A2的成像，如图1所述，所述第一偏光片140全贴合于所述第一衬底基板111上。\n\n[0055]在一些实施例中，如图4所示，图4为本揭示实施例提供的另一种显示装置100的截面结构示意图，所述第一偏光片140在位于所述第一显示区域A1的部分设有第一通孔141，所述第一通孔141用于提供外界光线通过的途径，减少第一偏光片140对外界光线的过滤，提高传感装置170的屏下传感技术效果。\n\n[0056]在本实施例中，如图1所示，所述显示装置100还包括第二偏光片150和背光模组160，所述背光模组160设置于所述阵列基板120远离所述彩膜基板110的一侧，所述第二偏光片150设置于所述背光模组160与所述阵列基板120之间，所述第二偏光片150在所述第一衬底基板111上的正投影区域与所述第一偏光片140在所述第一衬底基板111上的正投影区域重叠。所述背光模组160包括导光板161和设置于所述导光板161一侧的光源162，所述导光板161在所述第一显示区域A1的部分设有通孔，所述通孔用于放置所述所述传感装置170。\n\n[0057]所述第二偏光片150与所述显示器件层123设置于同一层，且所述第二偏光片150在所述第一显示区域A1的部分设置有通孔，所述显示器件层123设置于所述通孔内，可以减小阵列基板120的厚度。\n\n[0058]本揭示实施例通过在阵列基板的第二衬底基板与驱动电路相反的一侧上设置显示器件层，并在显示器件层与第二衬底基板相反的一侧设置传感装置，当显示器件层需要显示画面时，子像素单元的微发光二极管自发光实现正常的画面显示，与显示装置的其他显示画面衔接，实现全屏显示的效果；当需要使用传感装置时，微发光二极管不发光，传感装置通过显示器件层进行图形采集成像，实现屏下传感的技术效果，解决了液晶显示装置与光学式传感器无法在空间重合的问题。\n\n[0059]实施例二：\n\n[0060]本揭示实施例提供一种显示装置的制作方法，下面结合图1、图2、图3和图5进行详细说明。\n\n[0061]如图5所示，图5为本揭示实施例提供的显示装置的制作方法的流程示意图，所述制作方法包括：\n\n[0062]步骤S10：提供阵列基板，所述阵列基板包括衬底基板121和位于所述衬底基板121一侧的驱动电路层122；\n\n[0063]步骤S20：在所述衬底基板121与所述驱动电路层122相反的一侧上形成子像素图案和像素驱动电路；\n\n[0064]步骤S30：将微发光二极管127放置到相应所述子像素图案；\n\n[0065]步骤S40：通过光刻制程，将所述微发光二极管127与所述像素驱动电路连接；\n\n[0066]步骤S50：在所述衬底基板121远离所述驱动电路层122的一侧形成封装层184，所述封装层184覆盖所述微发光二极管127以及所述像素驱动电路。\n\n[0067]如图2所示，所述像素电极图案124包括发光子区125和外部光透射子区126，所述像素驱动电路在所述发光子区125形成有绑定电极，所述步骤S30中，微发光二极管127应放置到相应子像素图案发光子区125的绑定电极。所述发光子区125不透光，用于放置所述微发光二极管127，所述外部光透射子区126用于透过外部光线，从而实现显示装置的屏下传感技术。\n\n[0068]如图3所示，所述像素驱动电路包括栅极信号线180和数据信号线181，所述栅极信号线180和数据信号线181分别通过金属线182与微发光二极管127的N pad和P pad相连接。\n\n[0069]所述步骤S30中，可以通过电磁力、静电力、范德华力等方式将生长基板或中间基板上的微发光二极管转移到相应所述子像素图案上，此处不做限制。\n\n[0070]在本实施例中，所述微发光二极管127包括红色微发光二极管、绿色微发光二极管和蓝色微发光二极管，相邻三个所述子像素单元124组成一个像素，所制作的显示面板即可实现全彩化的显示效果。\n\n[0071]在一些实施例中，所述微发光二极管127也可以全部都是蓝色微发光二极管，此时，在进行步骤S40后，还应在阵列基板和彩膜基板之间制作形成量子点膜层，所述量子点膜层在蓝色微发光二极管发出的蓝光的激发下，可以产生其他颜色的光，同样能够实现全彩化的显示效果。当然，在其他的实施例中，也可以采用荧光粉或者色彩转换层代替量子点膜层，实现全彩化的显示效果。\n\n[0072]在完成所述步骤S50后即可按照正常的液晶显示装置制作方法，将阵列基板与彩膜基板进行成盒等制程，获得完整的显示装置。\n\n[0073]所述显示装置的截面结构示意图如图1所示，包括第一显示区域A1和第二显示区域A2，微发光二极管127以及像素驱动电路形成的显示器件层123通过发光可以实现第一显示区域A1的正常显示，且能够与第二显示区域A2的显示画面衔接，实现全屏现实的技术效果。当显示器件层123不工作时，外界光线可以通过显示器件层123抵达传感装置170，并进行图像采集成像，实现屏下传感的技术效果。\n\n[0074]本揭示实施例提供一种显示装置的制作方法，通过在阵列基板的驱动电路层相反的一侧制作形成像素驱动电路、子像素图案以及微发光二极管，可以解决微发光二极管转移、绑定以及像素驱动电路的制作等高温制程导致的彩膜基板110的色阻不耐高温被破坏的问题，同时，还可以省去液晶盒玻璃和微发光二极管玻璃对组制程，并解决显示器件层123厚度与液晶盒厚度不兼容的问题。\n\n[0075]综上所述，虽然本揭示以优选实施例揭露如上，但上述优选实施例并非用以限制本揭示，本领域的普通技术人员，在不脱离本揭示的精神和范围内，均可作各种更动与润饰，因此本揭示的保护范围以权利要求界定的范围为基准。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示装置及显示装置的制作方法。\n\n背景技术\n\n[0002]随着手机全面屏的普及和消费者对机身一体化的追求，屏下传感技术成为业界开发重点。\n\n[0003]微发光二极管(Micro LED)因超高亮度、高对比度、相应时间快、信耐性好、透明度高等特点被认为是下一代显示装置。有机发光二极管(OrganicLight-Emitting Diode,OLED)和微发光二极管做透明显示时，透过率都比液晶显示装置(Liquid CrystalDisplay,LCD)有优势，但与OLED相比，Micro LED不存在高电流驱动下的寿命问题，故更适合用来作为透明显示。Micro LED能够以更小的像素尺寸达到高亮显示，透过率可达80％，OLED更需要考虑寿命与亮度间的平衡问题，故透过率被限制在50％。因此，现有LCD技术结合Micro LED高穿透特性方案，可共用OLED目前的屏下方案，并可以进一步拓展其他传感方案达成全面屏显示。\n\n[0004]LCD因属于整面背光的被动发光，光学式传感器与光学显示无法在空间上重合，较OLED和Micro LED像素级主动式发光显示存在透过率不足的问题。\n\n[0005]综上所述，现有液晶显示装置存在透过率不足无法实现屏下传感技术的问题。故，有必要提供一种显示装置及显示装置的制作方法来改善这一缺陷。\n\n发明内容\n\n[0006]本揭示实施例提供一种显示装置及显示装置的制作方法，用于解决现有液晶显示装置存在透过率不足无法实现屏下传感技术的问题。\n\n[0007]本揭示实施例提供一种显示装置，包括：\n\n[0008]彩膜基板，包括第一衬底基板和设置于所述第一衬底基板上的彩色滤光层；\n\n[0009]阵列基板，与所述彩膜基板相对设置，包括第二衬底基板、驱动电路层以及显示器件层，所述驱动电路层设置于所述第二衬底基板靠近所述彩膜基板的一侧上，所述显示器件层设置于所述第二衬底基板远离所述彩膜基板的一侧上；\n\n[0010]液晶层，所述液晶层设置于所述阵列基板与所述彩膜基板之间；以及\n\n[0011]传感装置，所述传感装置设置于所述显示器件层远离所述阵列基板的一侧；\n\n[0012]其中，所述显示器件层包括阵列排布的多个子像素单元和像素驱动电路，所述子像素单元包括微发光二极管。\n\n[0013]根据本揭示一实施例，所述显示装置包括显示区域和位于所述显示区域周围的非显示区域，所述显示区域包括第一显示区域和第二显示区域，所述显示器件层在所述第二衬底基板上的正投影区域与所述第一显示区域重叠，所述第二显示区域位于所述第一显示区域周围。\n\n[0014]根据本揭示一实施例，所述彩色滤光层在所述彩膜基板上的正投影区域与所述第二显示区域重叠。\n\n[0015]根据本揭示一实施例，所述彩膜基板远离所述阵列基板的一侧上设有第一偏光片，所述第一偏光片位于所述第一显示区域的部分设有第一通孔。\n\n[0016]根据本揭示一实施例，所述显示装置还包括第二偏光片和背光模组，所述背光模组设置于所述阵列基板远离所述彩膜基板的一侧，所述第二偏光片设置于所述背光模组与所述阵列基板之间，所述第二偏光片在所述第一衬底基板上的正投影区域与所述第一偏光片在所述第一衬底基板上的正投影区域重叠。\n\n[0017]根据本揭示一实施例，所述子像素单元包括发光子区和外部光透射子区，所述微发光二极管设置于所述发光子区内。\n\n[0018]根据本揭示一实施例，所述外部光透射子区的面积大于或等于所述发光子区的面积。\n\n[0019]根据本揭示一实施例，所述显示器件层还包括封装层，所述封装层设置于所述第二衬底基板远离所述驱动电路板的一侧上，并覆盖所述显示器件层。\n\n[0020]根据本揭示一实施例，所述微发光二极管包括红色微发光二极管、绿色微发光二极管和蓝色微发光二极管。\n\n[0021]本揭示实施例还提供一种显示装置的制作方法，包括：\n\n[0022]提供阵列基板，所述阵列基板包括衬底基板和位于所述衬底基板一侧的驱动电路层；\n\n[0023]在所述衬底基板与所述驱动电路层相反的一侧上形成子像素图案和像素驱动电路；\n\n[0024]将微发光二极管放置到相应所述子像素图案；\n\n[0025]通过光刻制程，将所述微发光二极管与所述像素驱动电路连接；以及\n\n[0026]在所述衬底基板远离所述驱动电路层的一侧形成封装层，所述封装层覆盖所述微发光二极管以及所述像素驱动电路。\n\n[0027]本揭示实施例的有益效果：本揭示实施例通过在阵列基板的第二衬底基板与驱动电路相反的一侧上设置显示器件层，并在显示器件层与第二衬底基板相反的一侧设置传感装置，当显示器件层需要显示画面时，子像素单元的微发光二极管自发光实现正常的画面显示，与显示装置的其他显示画面衔接，实现全屏显示的效果；当需要使用传感装置时，微发光二极管不发光，传感装置通过显示器件层进行图形采集成像，实现屏下传感的技术效果。\n\n附图说明\n\n[0028]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是揭示的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0029]图1为本揭示实施例一提供的显示装置的截面结构示意图；\n\n[0030]图2为本揭示实施例一提供的显示器件层的平面结构示意图；\n\n[0031]图3为本揭示实施例一提供的显示器件层的截面结构示意图；\n\n[0032]图4为本揭示实施例一提供的另一种显示装置的截面结构示意图；\n\n[0033]图5为本揭示实施例二提供的显示装置的制作方法的流程示意图。\n\n具体实施方式\n\n[0034]以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。\n\n[0035]下面结合附图和具体实施例对本揭示做进一步的说明：\n\n[0036]实施例一：\n\n[0037]本揭示实施例提供一种显示装置，下面结合图1至图3进行详细说明。\n\n[0038]如图1所示，图1为本揭示实施例提供的显示装置100的截面结构示意图，所述显示装置100包括彩膜基板110、与所述彩膜基板110相对设置的阵列基板120以及设置于所述彩膜基板110和阵列基板120之间的液晶层130。\n\n[0039]具体地，所述彩膜基板110包括第一衬底基板111和设置于所述第一衬底基板111上的彩色滤光层112，所述彩色滤光层112设置于所述第一衬底基板111靠近所述阵列基板120的一侧。所述阵列基板120包括第二衬底基板121、驱动电路层122以及显示器件层123，所述驱动电路层122设置于所述第二衬底基板121靠近所述彩膜基板110的一侧上，所述显示器件层123设置于所述第二衬底基板121远离所述彩膜基板110的一侧上。所述传感装置170设置于所述显示器件层123远离所述阵列基板120的一侧。\n\n[0040]在本实施例中，如图1所示，所述显示装置100包括显示区域和位于所述显示区域周围的非显示区域，所述显示区域包括第一显示区域A1和第二显示区域A2，所述显示器件层123在所述第二衬底基板121上的正投影区域与所述第一显示区域A1重叠，所述第二显示区域A2位于所述第一显示区域A1周围。当所述显示器件层123工作时，所述微发光二极管127发光，所述第一显示区域A1显示所述显示器件层123的显示画面，所述第二显示区域A2显示彩膜基板110、液晶层130和阵列基板120工作所形成的显示画面，两个显示画面衔接，实现全屏显示的显示效果。当传感装置170工作时，显示器件层123停止工作，第一显示区域A1不显示画面，外界光线通过显示器件层123抵达传感装置170，传感装置170进行图像采集成像。\n\n[0041]优选的，所述传感装置170包括屏下摄像装置、面部识别装置、距离感应装置以及指纹识别装置等其中的一种或多种。此外，可以根据第一显示区域A1的面积大小，还可以在所述第一显示区域A1内增设补光灯、呼吸灯以及时间显示等效果。\n\n[0042]优选的，所述第一显示区域A1可以位于显示装置100的显示区域的任意位置，也可以不具有显示作用，仅作为传感装置170获取外界光线的媒介，设置于非显示区域。同样，所述第一显示区域A1的形状也可以是圆形、水滴状、“美人尖”等。\n\n[0043]优选的，所述第一显示区域A1的面积应远小于第二显示区域A2的面积，例如小于或等于20mm*10mm，且所述第一显示区域A1所需要的像素的数量较少，从而可以保证第一显示区域A1微发光二极管的巨量转印良率以及生产成本的控制。\n\n[0044]如图2至图3所示，图2为本揭示实施例提供的显示器件层的平面结构示意图，图3为本揭示实施例提供的显示器件层的截面结构示意图，所述显示器件层123包括阵列排布的多个子像素单元124和像素驱动电路。\n\n[0045]具体地，所述子像素单元124包括发光子区125和外部光透射子区126，所述子像素单元124还包括微发光二极管127，所述微发光二极管设置于所述发光子区125内。所述外部光透射子区126用于为外部光线穿过所述显示器件层123提供途径，从而提升显示器件层123的光线透过率。所述子像素驱动电路设置于所述发光子区125内以及显示器件层123内除子像素单元124以外的其他部分。\n\n[0046]将显示器件层123设置于第二衬底基板121远离彩膜基板110的一侧，可以解决微发光二极管127转移、绑定以及像素驱动电路的制作等高温制程导致的彩膜基板110的色阻不耐高温被破坏的问题，同时，还可以省去液晶盒玻璃和微发光二极管玻璃对组制程，并解决显示器件层123厚度与液晶盒厚度不兼容的问题。\n\n[0047]在本实施例中，所述微发光二极管127包括红色微发光二极管、绿色微发光二极管和蓝色微发光二极管，相邻三个所述子像素单元124组成一个像素。在一些实施例中，所述微发光二极管127也可以全部都是蓝色微发光二极管，此时，蓝色发光二极管作为光源，所述显示器件层123还应包括量子点膜层，所述量子点膜层位于所述微发光二极管127与第二衬底基板121之间，所述量子点膜层在所述蓝色微发光二极管发出的蓝光的激发下，可以产生其他颜色的光，从而实现全彩化的显示效果。当然，在其他的一些实施例中，也可以采用荧光粉或者色彩转换层代替量子点膜层，实现全彩化的显示效果。\n\n[0048]优选的，为防止微发光二极管127的尺寸过大影响显示器件层123的光线透过率，所述微发光二极管127的尺寸大小应小于所述子像素的尺寸大小，具体地，所述微发光二极管的尺寸范围为1μm～500μm，所述子像素单元124的尺寸范围为10μm～1000μm，使得显示器件层123具有良好的透明显示效果，保证传感装置170的屏下传感技术效果。\n\n[0049]优选的，同样为保证显示器件层123的光线透过率，所述外部光透射子区126的面积应大于或等于所述发光子区125的面积，所述第一衬底基板111和所述第二衬底基板121的材料也应当选用高透过率材料，包括玻璃、无色PI、PMMA等。\n\n[0050]如图3所示，所述微发光二极管127为正装微发光二极管芯片结构，所述像素驱动电路包括栅极信号线180和数据信号线181，所述栅极信号线180和数据信号线181分别通过金属线182与微发光二极管127的N pad和P pad相连接，所述微发光二极管127的出光面朝向所述彩膜基板110，可以避免倒装微发光二极管结构导致的基板和芯片电极材料匹配难的问题，可以实现与倒装微发光二极管相同的技术效果。当然，在一些实施例中，所述微发光二极管127也可以为台面微发光二极管芯片结构。\n\n[0051]在一些实施例中，所述像素驱动电路的驱动方式可以为有源寻址驱动或无源寻址驱动，所述有源寻址驱动则包括α-Si、IGZO、LTPS，上述驱动方式均能够实现相同的技术效果，此处不做限定。\n\n[0052]在本实施例中，如图3所示，所述显示器件层123还包括封装层184，所述封装层184设置于所述第二衬底基板121远离所述驱动电路层122的一侧上，并覆盖所述显示器件层123，所述封装层184用于保护所述显示器件层123。\n\n[0053]在本实施例中，所述彩色滤光层112在所述彩膜基板110上的正投影区域与所述第二显示区域A2重叠，因此，所述彩色滤光层112在所述第一显示区域A1的部分形成一通孔，所述通孔的形状与所述显示器件层123相同，可以减少彩色滤光层112对外界光线的影响，提升彩膜基板110的光线透过率。\n\n[0054]在本实施例中，所述彩膜基板110远离所述阵列基板120的一侧上设有第一偏光片140，所述第一偏光片140用于第二显示区域A2的成像，如图1所述，所述第一偏光片140全贴合于所述第一衬底基板111上。\n\n[0055]在一些实施例中，如图4所示，图4为本揭示实施例提供的另一种显示装置100的截面结构示意图，所述第一偏光片140在位于所述第一显示区域A1的部分设有第一通孔141，所述第一通孔141用于提供外界光线通过的途径，减少第一偏光片140对外界光线的过滤，提高传感装置170的屏下传感技术效果。\n\n[0056]在本实施例中，如图1所示，所述显示装置100还包括第二偏光片150和背光模组160，所述背光模组160设置于所述阵列基板120远离所述彩膜基板110的一侧，所述第二偏光片150设置于所述背光模组160与所述阵列基板120之间，所述第二偏光片150在所述第一衬底基板111上的正投影区域与所述第一偏光片140在所述第一衬底基板111上的正投影区域重叠。所述背光模组160包括导光板161和设置于所述导光板161一侧的光源162，所述导光板161在所述第一显示区域A1的部分设有通孔，所述通孔用于放置所述所述传感装置170。\n\n[0057]所述第二偏光片150与所述显示器件层123设置于同一层，且所述第二偏光片150在所述第一显示区域A1的部分设置有通孔，所述显示器件层123设置于所述通孔内，可以减小阵列基板120的厚度。\n\n[0058]本揭示实施例通过在阵列基板的第二衬底基板与驱动电路相反的一侧上设置显示器件层，并在显示器件层与第二衬底基板相反的一侧设置传感装置，当显示器件层需要显示画面时，子像素单元的微发光二极管自发光实现正常的画面显示，与显示装置的其他显示画面衔接，实现全屏显示的效果；当需要使用传感装置时，微发光二极管不发光，传感装置通过显示器件层进行图形采集成像，实现屏下传感的技术效果，解决了液晶显示装置与光学式传感器无法在空间重合的问题。\n\n[0059]实施例二：\n\n[0060]本揭示实施例提供一种显示装置的制作方法，下面结合图1、图2、图3和图5进行详细说明。\n\n[0061]如图5所示，图5为本揭示实施例提供的显示装置的制作方法的流程示意图，所述制作方法包括：\n\n[0062]步骤S10：提供阵列基板，所述阵列基板包括衬底基板121和位于所述衬底基板121一侧的驱动电路层122；\n\n[0063]步骤S20：在所述衬底基板121与所述驱动电路层122相反的一侧上形成子像素图案和像素驱动电路；\n\n[0064]步骤S30：将微发光二极管127放置到相应所述子像素图案；\n\n[0065]步骤S40：通过光刻制程，将所述微发光二极管127与所述像素驱动电路连接；\n\n[0066]步骤S50：在所述衬底基板121远离所述驱动电路层122的一侧形成封装层184，所述封装层184覆盖所述微发光二极管127以及所述像素驱动电路。\n\n[0067]如图2所示，所述像素电极图案124包括发光子区125和外部光透射子区126，所述像素驱动电路在所述发光子区125形成有绑定电极，所述步骤S30中，微发光二极管127应放置到相应子像素图案发光子区125的绑定电极。所述发光子区125不透光，用于放置所述微发光二极管127，所述外部光透射子区126用于透过外部光线，从而实现显示装置的屏下传感技术。\n\n[0068]如图3所示，所述像素驱动电路包括栅极信号线180和数据信号线181，所述栅极信号线180和数据信号线181分别通过金属线182与微发光二极管127的N pad和P pad相连接。\n\n[0069]所述步骤S30中，可以通过电磁力、静电力、范德华力等方式将生长基板或中间基板上的微发光二极管转移到相应所述子像素图案上，此处不做限制。\n\n[0070]在本实施例中，所述微发光二极管127包括红色微发光二极管、绿色微发光二极管和蓝色微发光二极管，相邻三个所述子像素单元124组成一个像素，所制作的显示面板即可实现全彩化的显示效果。\n\n[0071]在一些实施例中，所述微发光二极管127也可以全部都是蓝色微发光二极管，此时，在进行步骤S40后，还应在阵列基板和彩膜基板之间制作形成量子点膜层，所述量子点膜层在蓝色微发光二极管发出的蓝光的激发下，可以产生其他颜色的光，同样能够实现全彩化的显示效果。当然，在其他的实施例中，也可以采用荧光粉或者色彩转换层代替量子点膜层，实现全彩化的显示效果。\n\n[0072]在完成所述步骤S50后即可按照正常的液晶显示装置制作方法，将阵列基板与彩膜基板进行成盒等制程，获得完整的显示装置。\n\n[0073]所述显示装置的截面结构示意图如图1所示，包括第一显示区域A1和第二显示区域A2，微发光二极管127以及像素驱动电路形成的显示器件层123通过发光可以实现第一显示区域A1的正常显示，且能够与第二显示区域A2的显示画面衔接，实现全屏现实的技术效果。当显示器件层123不工作时，外界光线可以通过显示器件层123抵达传感装置170，并进行图像采集成像，实现屏下传感的技术效果。\n\n[0074]本揭示实施例提供一种显示装置的制作方法，通过在阵列基板的驱动电路层相反的一侧制作形成像素驱动电路、子像素图案以及微发光二极管，可以解决微发光二极管转移、绑定以及像素驱动电路的制作等高温制程导致的彩膜基板110的色阻不耐高温被破坏的问题，同时，还可以省去液晶盒玻璃和微发光二极管玻璃对组制程，并解决显示器件层123厚度与液晶盒厚度不兼容的问题。\n\n[0075]综上所述，虽然本揭示以优选实施例揭露如上，但上述优选实施例并非用以限制本揭示，本领域的普通技术人员，在不脱离本揭示的精神和范围内，均可作各种更动与润饰，因此本揭示的保护范围以权利要求界定的范围为基准。');
INSERT INTO `os_patent_instruction_text` VALUES (10711, 23765, '技术领域\n\n[0001]本发明涉及显示技术领域，具体为一种背光模组、显示装置。\n\n背景技术\n\n[0002]随着液晶显示技术的发展，特别是全面屏技术的发展，将显示装置的背光模组(BLU)下边界做到极致窄，有利于提升显示区的屏占比。\n\n[0003]现有技术中，背光模组1a一般包括LED光源10a、背板11a、反射片12a、导光板13a、扩散片14a、增光片15a、遮光胶带16a等结构。其结构图可见图1、图2所示。图1中是光源的灯板(FPC板)反装结构，图2中是光源的灯板(FPC板)侧装结构，现有技术中的光源，采用LED灯为发光结构，其尺寸较大，混光距离较大，因此，需要占用较大的空间。\n\n[0004]如表1所示，表1为侧装结构背光模组1a、反装结构的背光模组1a的各项参数。\n\n[0005]\n\n[0006]表1中，光源规格是指单个LED的尺寸规格，为行业内的标准规格，LED前后距离为LED出光面到灯板表面的距离，Chip Pitch为两个相邻LED之间的距离。同时参见图1和表1，B1的距离需要达到0.7mm以上，C1需要达到1mm以上，造成显示区的范围缩小，而边框宽度(A1与D1之和)过宽，边框宽度基本超过了2mm。同样的，同时参见图2和表1，B2的距离需要达到0.9mm以上，C1的距离需要达到0.95mm以上，造成显示区的范围缩小，而边框宽度(A2与D2之和)过宽，边框宽度基本超过了1.8mm。因此，需要设计一款新的背光模组，以减小边框宽度，提高显示区的屏占比。\n\n发明内容\n\n[0007]为解决上述技术问题：本发明提供一种背光模组、显示装置，通过利用miniLED光源作为新的光源，减小光源的尺寸和混光距离，以进一步减小边框的总宽度，提高显示区的屏占比。\n\n[0008]解决上述问题的技术方案是：本发明提供一种背光模组，包括背板，包括一底板和垂直连接至所述底板的边侧的侧板；反射层，设于所述底板上；导光板，设于所述反射层上，所述导光板朝向所述侧板的一面为入光面；miniLED灯板，包括一出光面，所述miniLED灯板贴覆于所述侧板上，且所述miniLED灯板的出光面紧贴于所述导光板的入光面。\n\n[0009]在本发明一实施例中，所述导光板的入光面与所述侧板之间的距离小于或等于0.5mm。\n\n[0010]在本发明一实施例中，所述miniLED灯板包括灯板；miniLED灯，设于所述灯板上；透明封装胶层，设于所述灯板具有所述miniLED灯的一面且覆盖所述miniLED灯。\n\n[0011]在本发明一实施例中，所述灯板的厚度小于等于0.1mm，所述灯板的宽度范围为0.2mm-0.6mm。\n\n[0012]在本发明一实施例中，所述透明封装胶层的厚度小于等于0.4mm。\n\n[0013]在本发明一实施例中，所述miniLED灯板通过双面胶贴覆于所述侧板上。\n\n[0014]在本发明一实施例中，所述的背光模组还包括扩散片，设于所述导光板上；功能膜片，设于所述扩散片上。\n\n[0015]在本发明一实施例中，所述的背光模组还包括遮光胶带，设于所述功能膜片上，所述遮光胶带的一侧延伸至所述侧板上。\n\n[0016]在本发明一实施例中，所述遮光胶带的宽度小于等于0.9mm。\n\n[0017]在本发明一实施例中，所述的背光模组还包括黑色单面胶，包覆于所述底板、所述侧板和所述遮光胶带上。\n\n[0018]本发明还提供了一种显示装置，包括所述的背光模组。\n\n[0019]本发明的有益效果是：本发明的背光模组、显示装置，本发明的背光模组为反装结构，通过利用miniLED光源代替现有技术中的支架灯或者COB光源，减小了光源的尺寸，有效减小了miniLED光源远离所述侧板的一侧与所述侧板的距离，即B值；以及减小了遮光胶带远离顶板的一侧到miniLED光源远离侧板的一侧的距离，从而减小了混光距离，进一步减小边框的总宽度，有效地提高了显示区的屏占比。\n\n附图说明\n\n[0020]下面结合附图和实施例对本发明作进一步解释。\n\n[0021]图1是现有技术中反装结构的背光模组结构图。\n\n[0022]图2是现有技术中侧装结构的背光模组结构图。\n\n[0023]图3是本发明实施例的背光模组结构图。\n\n[0024]图4是本发明实施例的miniLED光源结构图。\n\n[0025]附图标记：\n\n[0026]1、1a背光模组；\n\n[0027]100显示装置； 1001显示区；\n\n[0028]10a LED光源； 11a背板；\n\n[0029]12a反射片； 13a导光板；\n\n[0030]14a扩散片； 15a增光片；\n\n[0031]16a遮光胶带；\n\n[0032]10 miniLED光源； 11背板；\n\n[0033]12反射片； 13导光板；\n\n[0034]14扩散片； 15功能膜片；\n\n[0035]16遮光胶带； 17黑色单面胶；\n\n[0036]18容纳腔；\n\n[0037]101灯板； 102 miniLED灯；\n\n[0038]103透明封装胶层； 111底板；\n\n[0039]112侧板。\n\n具体实施方式\n\n[0040]以下实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「顶」、「底」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。\n\n[0041]如图3所示，在一实施例中，本发明的背光模组1，包括miniLED光源10、背板11、反射片12、导光板13、扩散片14、功能膜片15、遮光胶带16、黑色单面胶17。\n\n[0042]如图4所示，所述miniLED光源10包括灯板101、miniLED灯102、透明封装胶层103。其中所述灯板101为FPC灯板101，所述灯板101的厚度小于等于0.1mm，其宽度在0.2mm-0.5mm。所述miniLED灯102分布在所述灯板101上，所有的miniLED灯102成线形分布，其中相邻的两个miniLED灯102之间的距离小于等于5mm，本实施例中，优选为0.5mm至1.1mm之间。所述透明封装胶层103设置在所述灯板101具有miniLED灯102的一面，并覆盖miniLED灯102。所述透明封装胶层103的厚度小于等于0.3mm，优选为0.1mm-0.2mm。所述透明封装胶层103远离所述灯板101的一面为出光面，所述出光面的宽度为0.2mm-0.5mm。\n\n[0043]参见图3所示，所述背板11为金属背板，包括一底板111、一侧板112，其中所述侧板112垂直连接至所述底板111的边侧。所述背板11的厚度一般在0.1mm±0.02mm。\n\n[0044]参见图3所示，所述反射片12设于所述底板111上。所述导光板13设于所述反射片12上，所述导光板13朝向所述侧板112的一面为入光面。所述底板111、所述侧板112以及所述导光板13围成一容纳所述miniLED光源10的容纳腔18。\n\n[0045]参见图3所示，所述miniLED光源10的灯板101贴覆于所述侧板112上，本实施例中，所述灯板101通过胶水或者双面胶粘接在所述侧板112上，且所述miniLED光源10的出光面紧贴于所述导光板13的入光面。\n\n[0046]如图3所示，所述miniLED光源10远离所述侧板112的一侧与所述侧板112的距离小于等于0.5mm，即B值小于等于0.5mm，本实施例中，B值为0.35mm，那么在本实施例所用的所述透明封装胶层103的厚度可选择0.2mm，所述灯板101的厚度可以选择0.1mm。\n\n[0047]由此可见，本实施例中的B值远远小于现有技术中的B1值或B2值。\n\n[0048]参见图3所示，所述扩散片14设于所述导光板13上；所述功能膜片15设于所述扩散片14上。所述功能膜片15可以包括棱镜片、增光片，所述棱镜片和增光片叠层设置。\n\n[0049]参见图3所示，所述遮光胶带16设于所述功能膜片15上，所述遮光胶带16的一侧延伸至所述侧板112上。所述黑色单面胶17包覆于所述底板111、所述侧板112和所述遮光胶带16上。\n\n[0050]参见图3所示，所述遮光胶带16远离所述侧板112的一侧到所述miniLED光源10远离所述侧板112的一侧的距离小于等于0.9mm，即图3中，C值小于等于0.9mm。因此，本实施例中，所述C值远远小于现有技术中的所述C1值和所述C2值，所述遮光胶带16整体的宽度远远小于现有技术中的遮光胶带16的宽度。由此可见，本实施例中背光模组1的边框宽度要远远小于现有技术中的边框宽度，即边框宽度即图3中所示的D值与A值之和，所述D值为B值和C值的之和，本实施例中D值为小于等于1.45mm。而所述A值为背板11的厚度和遮光胶带16的厚度之和，所述背板11的厚度和遮光胶带16的厚度一般难以在原有基础上进行减薄，因此，与现有技术相比，在所述B值和所述C值进行有效减小之后，所述D值也有效的减小了，从而在现有技术的基础上，进一步减小了边框的总宽度，有效提高了显示区1001的屏占比。\n\n[0051]参见图3所示，本发明还提供了一种显示装置100，包括所述的背光模组1。本案的设计要点在于背光模组1，置于显示装置的其他器件，如阵列基板、彩膜基板等就不再一一赘述。\n\n[0052]以上仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。以上仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。', '技术领域\n\n[0001]本发明涉及显示技术领域，具体为一种背光模组、显示装置。\n\n背景技术\n\n[0002]随着液晶显示技术的发展，特别是全面屏技术的发展，将显示装置的背光模组(BLU)下边界做到极致窄，有利于提升显示区的屏占比。\n\n[0003]现有技术中，背光模组1a一般包括LED光源10a、背板11a、反射片12a、导光板13a、扩散片14a、增光片15a、遮光胶带16a等结构。其结构图可见图1、图2所示。图1中是光源的灯板(FPC板)反装结构，图2中是光源的灯板(FPC板)侧装结构，现有技术中的光源，采用LED灯为发光结构，其尺寸较大，混光距离较大，因此，需要占用较大的空间。\n\n[0004]如表1所示，表1为侧装结构背光模组1a、反装结构的背光模组1a的各项参数。\n\n[0005]\n\n[0006]表1中，光源规格是指单个LED的尺寸规格，为行业内的标准规格，LED前后距离为LED出光面到灯板表面的距离，Chip Pitch为两个相邻LED之间的距离。同时参见图1和表1，B1的距离需要达到0.7mm以上，C1需要达到1mm以上，造成显示区的范围缩小，而边框宽度(A1与D1之和)过宽，边框宽度基本超过了2mm。同样的，同时参见图2和表1，B2的距离需要达到0.9mm以上，C1的距离需要达到0.95mm以上，造成显示区的范围缩小，而边框宽度(A2与D2之和)过宽，边框宽度基本超过了1.8mm。因此，需要设计一款新的背光模组，以减小边框宽度，提高显示区的屏占比。\n\n发明内容\n\n[0007]为解决上述技术问题：本发明提供一种背光模组、显示装置，通过利用miniLED光源作为新的光源，减小光源的尺寸和混光距离，以进一步减小边框的总宽度，提高显示区的屏占比。\n\n[0008]解决上述问题的技术方案是：本发明提供一种背光模组，包括背板，包括一底板和垂直连接至所述底板的边侧的侧板；反射层，设于所述底板上；导光板，设于所述反射层上，所述导光板朝向所述侧板的一面为入光面；miniLED灯板，包括一出光面，所述miniLED灯板贴覆于所述侧板上，且所述miniLED灯板的出光面紧贴于所述导光板的入光面。\n\n[0009]在本发明一实施例中，所述导光板的入光面与所述侧板之间的距离小于或等于0.5mm。\n\n[0010]在本发明一实施例中，所述miniLED灯板包括灯板；miniLED灯，设于所述灯板上；透明封装胶层，设于所述灯板具有所述miniLED灯的一面且覆盖所述miniLED灯。\n\n[0011]在本发明一实施例中，所述灯板的厚度小于等于0.1mm，所述灯板的宽度范围为0.2mm-0.6mm。\n\n[0012]在本发明一实施例中，所述透明封装胶层的厚度小于等于0.4mm。\n\n[0013]在本发明一实施例中，所述miniLED灯板通过双面胶贴覆于所述侧板上。\n\n[0014]在本发明一实施例中，所述的背光模组还包括扩散片，设于所述导光板上；功能膜片，设于所述扩散片上。\n\n[0015]在本发明一实施例中，所述的背光模组还包括遮光胶带，设于所述功能膜片上，所述遮光胶带的一侧延伸至所述侧板上。\n\n[0016]在本发明一实施例中，所述遮光胶带的宽度小于等于0.9mm。\n\n[0017]在本发明一实施例中，所述的背光模组还包括黑色单面胶，包覆于所述底板、所述侧板和所述遮光胶带上。\n\n[0018]本发明还提供了一种显示装置，包括所述的背光模组。\n\n[0019]本发明的有益效果是：本发明的背光模组、显示装置，本发明的背光模组为反装结构，通过利用miniLED光源代替现有技术中的支架灯或者COB光源，减小了光源的尺寸，有效减小了miniLED光源远离所述侧板的一侧与所述侧板的距离，即B值；以及减小了遮光胶带远离顶板的一侧到miniLED光源远离侧板的一侧的距离，从而减小了混光距离，进一步减小边框的总宽度，有效地提高了显示区的屏占比。\n\n附图说明\n\n[0020]下面结合附图和实施例对本发明作进一步解释。\n\n[0021]图1是现有技术中反装结构的背光模组结构图。\n\n[0022]图2是现有技术中侧装结构的背光模组结构图。\n\n[0023]图3是本发明实施例的背光模组结构图。\n\n[0024]图4是本发明实施例的miniLED光源结构图。\n\n[0025]附图标记：\n\n[0026]1、1a背光模组；\n\n[0027]100显示装置； 1001显示区；\n\n[0028]10a LED光源； 11a背板；\n\n[0029]12a反射片； 13a导光板；\n\n[0030]14a扩散片； 15a增光片；\n\n[0031]16a遮光胶带；\n\n[0032]10 miniLED光源； 11背板；\n\n[0033]12反射片； 13导光板；\n\n[0034]14扩散片； 15功能膜片；\n\n[0035]16遮光胶带； 17黑色单面胶；\n\n[0036]18容纳腔；\n\n[0037]101灯板； 102 miniLED灯；\n\n[0038]103透明封装胶层； 111底板；\n\n[0039]112侧板。\n\n具体实施方式\n\n[0040]以下实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「顶」、「底」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。\n\n[0041]如图3所示，在一实施例中，本发明的背光模组1，包括miniLED光源10、背板11、反射片12、导光板13、扩散片14、功能膜片15、遮光胶带16、黑色单面胶17。\n\n[0042]如图4所示，所述miniLED光源10包括灯板101、miniLED灯102、透明封装胶层103。其中所述灯板101为FPC灯板101，所述灯板101的厚度小于等于0.1mm，其宽度在0.2mm-0.5mm。所述miniLED灯102分布在所述灯板101上，所有的miniLED灯102成线形分布，其中相邻的两个miniLED灯102之间的距离小于等于5mm，本实施例中，优选为0.5mm至1.1mm之间。所述透明封装胶层103设置在所述灯板101具有miniLED灯102的一面，并覆盖miniLED灯102。所述透明封装胶层103的厚度小于等于0.3mm，优选为0.1mm-0.2mm。所述透明封装胶层103远离所述灯板101的一面为出光面，所述出光面的宽度为0.2mm-0.5mm。\n\n[0043]参见图3所示，所述背板11为金属背板，包括一底板111、一侧板112，其中所述侧板112垂直连接至所述底板111的边侧。所述背板11的厚度一般在0.1mm±0.02mm。\n\n[0044]参见图3所示，所述反射片12设于所述底板111上。所述导光板13设于所述反射片12上，所述导光板13朝向所述侧板112的一面为入光面。所述底板111、所述侧板112以及所述导光板13围成一容纳所述miniLED光源10的容纳腔18。\n\n[0045]参见图3所示，所述miniLED光源10的灯板101贴覆于所述侧板112上，本实施例中，所述灯板101通过胶水或者双面胶粘接在所述侧板112上，且所述miniLED光源10的出光面紧贴于所述导光板13的入光面。\n\n[0046]如图3所示，所述miniLED光源10远离所述侧板112的一侧与所述侧板112的距离小于等于0.5mm，即B值小于等于0.5mm，本实施例中，B值为0.35mm，那么在本实施例所用的所述透明封装胶层103的厚度可选择0.2mm，所述灯板101的厚度可以选择0.1mm。\n\n[0047]由此可见，本实施例中的B值远远小于现有技术中的B1值或B2值。\n\n[0048]参见图3所示，所述扩散片14设于所述导光板13上；所述功能膜片15设于所述扩散片14上。所述功能膜片15可以包括棱镜片、增光片，所述棱镜片和增光片叠层设置。\n\n[0049]参见图3所示，所述遮光胶带16设于所述功能膜片15上，所述遮光胶带16的一侧延伸至所述侧板112上。所述黑色单面胶17包覆于所述底板111、所述侧板112和所述遮光胶带16上。\n\n[0050]参见图3所示，所述遮光胶带16远离所述侧板112的一侧到所述miniLED光源10远离所述侧板112的一侧的距离小于等于0.9mm，即图3中，C值小于等于0.9mm。因此，本实施例中，所述C值远远小于现有技术中的所述C1值和所述C2值，所述遮光胶带16整体的宽度远远小于现有技术中的遮光胶带16的宽度。由此可见，本实施例中背光模组1的边框宽度要远远小于现有技术中的边框宽度，即边框宽度即图3中所示的D值与A值之和，所述D值为B值和C值的之和，本实施例中D值为小于等于1.45mm。而所述A值为背板11的厚度和遮光胶带16的厚度之和，所述背板11的厚度和遮光胶带16的厚度一般难以在原有基础上进行减薄，因此，与现有技术相比，在所述B值和所述C值进行有效减小之后，所述D值也有效的减小了，从而在现有技术的基础上，进一步减小了边框的总宽度，有效提高了显示区1001的屏占比。\n\n[0051]参见图3所示，本发明还提供了一种显示装置100，包括所述的背光模组1。本案的设计要点在于背光模组1，置于显示装置的其他器件，如阵列基板、彩膜基板等就不再一一赘述。\n\n[0052]以上仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。以上仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。');
INSERT INTO `os_patent_instruction_text` VALUES (10712, 23766, '技术领域\n\n[0001]本申请涉及显示面板技术领域，尤其涉及一种背光结构及其制作方法，显示装置。\n\n背景技术\n\n[0002]随着显示技术的发展，对于背光结构的精细化和集成度越来越高，现有用于局部调光(Local Dimming)的miniLED背光，其LED灯板上所使用的超小尺寸封装的miniLED灯数量要求越来越多(例如，在一10.25寸的显示面板内，现有设计要求其灯板上LED灯颗数就达到2000颗左右)，对应的miniLED灯的焊脚数也相应增多，导致电路原理图以及PCB板上线路布局非常多且复杂，加大了PCB板的制作布线工艺成本，同时降低了PCB板的可靠性；此外，由于显示面板还有超薄的厚度要求，则设计上要求LED灯的混光距离越小越好，这势必也导致LED灯之间的间距减少，显然，这又使得灯板线路布局的复杂度进一步大大提升。\n\n发明内容\n\n[0003]本申请实施例提供一种背光结构及其制作方法，显示装置，以解决现有高集成度的背光结构中数量繁多的miniLED灯导致线路布设繁杂的问题。\n\n[0004]本申请实施例提供了一种背光结构，包括：设置有多个背光分区的基板、设置在所述基板一侧且与所述背光分区对应的分区电路模块、以及设置在所述基板另一侧且与所述分区电路模块对应的第一外接引脚和第二外接引脚，所述分区电路模块与相应的所述第一外接引脚和所述第二外接引脚电连接；\n\n[0005]其中，所述分区电路模块包括设置在相应的所述背光分区中的多个发光单元，每个所述分区电路模块中的多个发光单元均与相应的所述第一外接引脚和所述第二外接引脚电连接\n\n[0006]根据本申请一优选实施例，每一所述分区电路模块至少包括两相互并联的分区支路，各所述分区支路中至少串联有一所述发光单元，各所述分区支路两端分别与相应所述分区电路模块对应的所述第一外接引脚和第二外接引脚电性连接。\n\n[0007]根据本申请一优选实施例，各所述分区支路中串联的发光单元数量均相等。\n\n[0008]根据本申请一优选实施例，每一所述分区电路模块中各所述发光单元依次串联于所述第一外接引脚与第二外接引脚之间。\n\n[0009]根据本申请一优选实施例，还包括：设置在所述基板一侧，且位于各所述发光单元之间的反射层。\n\n[0010]根据本申请一优选实施例，所述发光单元包括设置于所述基板上的灯杯、设置于所述灯杯内的mini LED芯片、以及设置于所述灯杯内且覆盖所述miniLED芯片的封装层。\n\n[0011]根据本申请一优选实施例，所述灯杯的材料为聚邻苯二酰胺，所述封装层内均匀分布有黄色荧光粉。\n\n[0012]根据本申请一优选实施例，所述基板为柔性基板或刚性基板。\n\n[0013]本申请实施例还提供了一种背光结构的制作方法，包括如下步骤：\n\n[0014]提供一基板，所述背光结构包括多个背光分区；\n\n[0015]分别在各所述背光分区内形成分区电路模块、以及形成分别与所述分区电路模块电性连接的第一外接引脚和第二外接引脚，所述分区电路模块包括设置于所述基板一侧且呈矩阵排布的多个发光单元，所述第一外接引脚和第二外接引脚形成于所述基板远离所述发光单元的一侧。\n\n[0016]本申请实施例又提供了一种显示装置，包括如前所述的背光结构。\n\n[0017]本申请的有益效果为：本申请背光结构通过划分多个背光分区，并将背光分区内的各发光单元复合成一分区电路模块，相对于每一发光单元均需两焊接引脚进行布线连接，该所述分区电路模块只需第一外接引脚和第二外接引脚的结构极大的减少了线路布设的复杂度，同时，每一背光分区中各发光单元之间的布线均集成于分区电路模块内，相对于现有对背光结构进行简单的分区实现调光的结构，本申请划分多个背光分区的结构使得线路更加精简，此外，在进行背光结构的制作中，以分区电路模块为单元整体制作，也解决由于数量繁多的miniLED排布过密影响基板上进行SMT(Surface Mounted Technology；表面贴装工艺)的问题，简化了基板焊接引脚的制作。\n\n附图说明\n\n[0018]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0019]图1为本申请实施例提供的一种背光结构的结构示意图；\n\n[0020]图2为本申请实施例提供的背光结构中一背光分区的一种分区电路示意图；\n\n[0021]图3为本申请实施例提供的背光结构中一背光分区的另一种分区电路示意图；\n\n[0022]图4为本申请实施例提供的一种背光结构的层级结构示意图；\n\n[0023]图5为本申请实施例提供的一种背光结构中发光单元的结构示意图；\n\n[0024]图6为本申请实施例提供的一种背光结构的制作方法的流程示意图；及\n\n[0025]图7为本申请实施例提供的一种显示装置的结构示意图。\n\n具体实施方式\n\n[0026]这里所公开的具体结构和功能细节仅仅是代表性的，并且是用于描述本申请的示例性实施例的目的。但是本申请可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。\n\n[0027]在本申请的描述中，需要理解的是，术语“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。\n\n[0028]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本申请中的具体含义。\n\n[0029]这里所使用的术语仅仅是为了描述具体实施例而不意图限制示例性实施例。除非上下文明确地另有所指，否则这里所使用的单数形式“一个”、“一项”还意图包括复数。还应当理解的是，这里所使用的术语“包括”和/或“包含”规定所陈述的特征、整数、步骤、操作、单元和/或组件的存在，而不排除存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。\n\n[0030]下面结合附图和实施例对本申请作进一步说明。\n\n[0031]如图1至图5所示，本申请实施例提供了一种背光结构1，包括：设置有多个背光分区100的基板100、设置在所述基板100一侧且与所述背光分区100对应的分区电路模块200、以及设置在所述基板100另一侧且与所述分区电路模块200对应的第一外接引脚21和第二外接引脚22，所述分区电路模块200与相应的所述第一外接引脚21和所述第二外接引脚22电连接；\n\n[0032]其中，所述分区电路模块200包括设置在相应的所述背光分区100中的多个发光单元210，每个所述分区电路模块200中的多个发光单元210均与相应的所述第一外接引脚21和所述第二外接引脚22电连接。\n\n[0033]可以理解的是，在一具体所述背光结构1中，可根据具体情况对背光结构1进行多个背光分区10的划分，当然，各所述背光分区10内发光单元210的数量以及呈矩阵排布的形式，可以相同也可以存在差异，如图1所示，本实施例中，所述背光分区10包括的发光单元210呈3×3的矩阵形式排布，显然，根据背光分区10划分的区域不同，也可以是呈其它矩阵形式排布，尤其是，可以存在呈单列或者单行的排布形式，值得注意的是，在一背光分区10中所述发光单元210的数量大于1。\n\n[0034]承上，通过将各所述背光分区10内的多个发光单元210集成在分区电路模块200内，然后以分区电路模块200为整体在基板100背面(也即所述基板100远离各所述发光单元210的一侧)引出与第一外接引脚21和第二外接引脚22电性连接，达到通过背光分区10复合多个发光单元210的效果，减少引脚数量，降低发光单元210密集排布造成工艺制作的复杂度，此外，可以理解的是，所述第一外接引脚21和第二外接引脚22可以分别作为分区电路模块200的正负极引脚。\n\n[0035]本实施例中，每一所述分区电路模块200至少包括两相互并联的分区支路220，各所述分区支路220中至少串联有一所述发光单元210，各所述分区支路220两端分别与相应所述分区电路模块200对应的所述第一外接引脚21和第二外接引脚22电性连接；具体的，如图2所示，以发光单元210呈3×3的矩阵形式排布为例，将位于同一行的各发光单元210依次串联形成分区支路220，然后将各分区支路220进行并联形成分区电路模块200；可以理解的是，在同一背光分区10中将各发光单元210复合的电路连接方式并不限于此，当然也可以是先以列中各发光单元210进行串联，然后将各列并联的形式进行复合；亦或者是将多列或多行的发光单元210进行串联，然后将各串联的部分并联，在此不再赘述。值得注意的是，具体的，由于并联的关系，各分区支路220的电压都相同，为便于控制的调光，本实施例中，各所述分区支路220中串联的发光单元210数量均相等。\n\n[0036]本实施例中，如图3所示，每一所述分区电路模块200中各所述发光单元210依次串联于所述第一外接引脚21与第二外接引脚22之间；可以理解的是，如前所述，在一背光分区10中各发光单元210可以存在呈单列或者单行的排布形式，具体的，可以将各发光单元210依次串联以形成分区电路模块200，值得注意的是，此种分区电路形式并不限于应用于当背光分区10中各发光单元210呈单列或者单行的排布形式时，也可应用在其它多种排布形式，只需将各发光单元210依次串联即可，当然，在具体应用中，为便于基板100上的电路布局和走线，一般应用于各发光单元210呈单列或者单行的排布形式。\n\n[0037]本实施例中，如图5所示，所述发光单元210包括设置于所述基板100上的灯杯211、设置于所述灯杯211内的mini LED芯片212、以及设置于所述灯杯211内且覆盖所述miniLED芯片212的封装层213；具体的，本实施例中，所述灯杯211的材料为聚邻苯二酰胺，使得灯杯211整体呈白色，所述封装层213的材料为可以透光的封装胶，所述封装层213内均匀分布有黄色荧光粉，通过黄色荧光粉的设置，使得发光单元210为提供白光的光源，此外，如图4所示，所述背光结构1还包括：设置在所述基板100一侧，且位于各所述发光单元210之间的反射层110，所述反射层110用于提高背光结构1中基板100表面的反射率，提高背光的利用率，具体的，所述反射层110的材料可以为白油，此外，根据具体的使用需要，所述基板100为柔性基板或刚性基板。\n\n[0038]本申请实施例还提供了一种背光结构1的制作方法，如图6所示，包括如下步骤：\n\n[0039]步骤S1，提供一基板100，所述背光结构1包括多个背光分区10；\n\n[0040]步骤S2，分别在各所述背光分区10内形成分区电路模块200、以及形成分别与所述分区电路模块200电性连接的第一外接引脚21和第二外接引脚22，所述分区电路模块200包括设置于所述基板100一侧且呈矩阵排布的多个发光单元210，所述第一外接引脚21和第二外接引脚22形成于所述基板100远离所述发光单元210的一侧。\n\n[0041]本实施例中，背光结构1的制作以采用SMT(Surface Mounted Technology表面贴装工艺)为例，但不限于运用此种工艺方式，可以理解的是，步骤S1中，所述背光结构1包括多个背光分区10，有一进行背光分区10的过程，需要充分考虑背光结构1(具体如IC芯片)驱动电流和电压能力，以上述如图2所示结构为例，发光单元210呈3×3的矩阵形式排布为例，若IC芯片单通道电压能力0-10V，电流能力0-20mA，则本申请采用图2所示的电路连接方式(可以根据需求的亮度，评估出发光单元210电流约1mA)。\n\n[0042]承上，本实施例中，步骤S2中，分别在各所述背光分区10内形成分区电路模块200包括：\n\n[0043]确定背光分区10内分区电路模块200的电路结构，然后在基板100上制作线路，具体可通过丝印的方式印刷制作；\n\n[0044]在所述基板100的背面(也即所述基板100远离各所述发光单元210的一侧)由前述分区电路模块200中的线路引出第一外接引脚21和第二外接引脚22；具体的，可以通过焊接的方式将分区电路模块200中的线路分别与第一外接引脚21和第二外接引脚22电性连接；显然，相对于现有背光结构1中每一发光单元210各对应两引脚的复杂结构，本申请只需第一外接引脚21和第二外接引脚22，极大的降低制作工艺的复杂度。\n\n[0045]在基板100上设置固定发光单元210，具体包括：采用贴片的方式将所述mini LED芯片212设置在所述基板100上，并通过回流焊的方式将所述mini LED芯片212固定在所述基板100上；值得注意的是，在贴片的过程中，可以是将一背光分区10中的各发光单元210作为一个整体进行贴片，以达到降低贴片工艺复杂度和精度的目的。此外，还包括灯杯211和封装层213的制作，在此不再赘述。\n\n[0046]本申请实施例又提供了一种显示装置，如图7所示，包括如前所述的背光结构1、和与背光结构1对应设置的LCD显示面板，该LCD显示面板可以包括依次层叠设置的TFT层2、液晶层3、彩膜层4等，背光结构1靠近TFT层2设置，显然，采用本申请所述的背光结构1，在满足超薄的条件下，使得显示装置也具备更好的局部调光效果。\n\n[0047]综上所述，本申请背光结构1通过划分多个背光分区10，并将背光分区10内的各发光单元210复合成一分区电路模块200，相对于每一发光单元210均需两焊接引脚进行布线连接，该所述分区电路模块200只需第一外接引脚21和第二外接引脚22的结构极大的减少了线路布设的复杂度，同时，每一背光分区10中各发光单元210之间的布线均集成于分区电路模块200内，相对于现有对背光结构1进行简单的分区实现调光的结构，本申请划分多个背光分区的结构使得线路更加精简，此外，在进行背光结构1的制作中，以分区电路模块200为单元整体制作，也解决由于数量繁多的miniLED排布过密影响基板100上进行SMT(Surface Mounted Technology表面贴装工艺)的问题，简化了基板100焊接引脚的制作。\n\n[0048]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本申请涉及显示面板技术领域，尤其涉及一种背光结构及其制作方法，显示装置。\n\n背景技术\n\n[0002]随着显示技术的发展，对于背光结构的精细化和集成度越来越高，现有用于局部调光(Local Dimming)的miniLED背光，其LED灯板上所使用的超小尺寸封装的miniLED灯数量要求越来越多(例如，在一10.25寸的显示面板内，现有设计要求其灯板上LED灯颗数就达到2000颗左右)，对应的miniLED灯的焊脚数也相应增多，导致电路原理图以及PCB板上线路布局非常多且复杂，加大了PCB板的制作布线工艺成本，同时降低了PCB板的可靠性；此外，由于显示面板还有超薄的厚度要求，则设计上要求LED灯的混光距离越小越好，这势必也导致LED灯之间的间距减少，显然，这又使得灯板线路布局的复杂度进一步大大提升。\n\n发明内容\n\n[0003]本申请实施例提供一种背光结构及其制作方法，显示装置，以解决现有高集成度的背光结构中数量繁多的miniLED灯导致线路布设繁杂的问题。\n\n[0004]本申请实施例提供了一种背光结构，包括：设置有多个背光分区的基板、设置在所述基板一侧且与所述背光分区对应的分区电路模块、以及设置在所述基板另一侧且与所述分区电路模块对应的第一外接引脚和第二外接引脚，所述分区电路模块与相应的所述第一外接引脚和所述第二外接引脚电连接；\n\n[0005]其中，所述分区电路模块包括设置在相应的所述背光分区中的多个发光单元，每个所述分区电路模块中的多个发光单元均与相应的所述第一外接引脚和所述第二外接引脚电连接\n\n[0006]根据本申请一优选实施例，每一所述分区电路模块至少包括两相互并联的分区支路，各所述分区支路中至少串联有一所述发光单元，各所述分区支路两端分别与相应所述分区电路模块对应的所述第一外接引脚和第二外接引脚电性连接。\n\n[0007]根据本申请一优选实施例，各所述分区支路中串联的发光单元数量均相等。\n\n[0008]根据本申请一优选实施例，每一所述分区电路模块中各所述发光单元依次串联于所述第一外接引脚与第二外接引脚之间。\n\n[0009]根据本申请一优选实施例，还包括：设置在所述基板一侧，且位于各所述发光单元之间的反射层。\n\n[0010]根据本申请一优选实施例，所述发光单元包括设置于所述基板上的灯杯、设置于所述灯杯内的mini LED芯片、以及设置于所述灯杯内且覆盖所述miniLED芯片的封装层。\n\n[0011]根据本申请一优选实施例，所述灯杯的材料为聚邻苯二酰胺，所述封装层内均匀分布有黄色荧光粉。\n\n[0012]根据本申请一优选实施例，所述基板为柔性基板或刚性基板。\n\n[0013]本申请实施例还提供了一种背光结构的制作方法，包括如下步骤：\n\n[0014]提供一基板，所述背光结构包括多个背光分区；\n\n[0015]分别在各所述背光分区内形成分区电路模块、以及形成分别与所述分区电路模块电性连接的第一外接引脚和第二外接引脚，所述分区电路模块包括设置于所述基板一侧且呈矩阵排布的多个发光单元，所述第一外接引脚和第二外接引脚形成于所述基板远离所述发光单元的一侧。\n\n[0016]本申请实施例又提供了一种显示装置，包括如前所述的背光结构。\n\n[0017]本申请的有益效果为：本申请背光结构通过划分多个背光分区，并将背光分区内的各发光单元复合成一分区电路模块，相对于每一发光单元均需两焊接引脚进行布线连接，该所述分区电路模块只需第一外接引脚和第二外接引脚的结构极大的减少了线路布设的复杂度，同时，每一背光分区中各发光单元之间的布线均集成于分区电路模块内，相对于现有对背光结构进行简单的分区实现调光的结构，本申请划分多个背光分区的结构使得线路更加精简，此外，在进行背光结构的制作中，以分区电路模块为单元整体制作，也解决由于数量繁多的miniLED排布过密影响基板上进行SMT(Surface Mounted Technology；表面贴装工艺)的问题，简化了基板焊接引脚的制作。\n\n附图说明\n\n[0018]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0019]图1为本申请实施例提供的一种背光结构的结构示意图；\n\n[0020]图2为本申请实施例提供的背光结构中一背光分区的一种分区电路示意图；\n\n[0021]图3为本申请实施例提供的背光结构中一背光分区的另一种分区电路示意图；\n\n[0022]图4为本申请实施例提供的一种背光结构的层级结构示意图；\n\n[0023]图5为本申请实施例提供的一种背光结构中发光单元的结构示意图；\n\n[0024]图6为本申请实施例提供的一种背光结构的制作方法的流程示意图；及\n\n[0025]图7为本申请实施例提供的一种显示装置的结构示意图。\n\n具体实施方式\n\n[0026]这里所公开的具体结构和功能细节仅仅是代表性的，并且是用于描述本申请的示例性实施例的目的。但是本申请可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。\n\n[0027]在本申请的描述中，需要理解的是，术语“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。\n\n[0028]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本申请中的具体含义。\n\n[0029]这里所使用的术语仅仅是为了描述具体实施例而不意图限制示例性实施例。除非上下文明确地另有所指，否则这里所使用的单数形式“一个”、“一项”还意图包括复数。还应当理解的是，这里所使用的术语“包括”和/或“包含”规定所陈述的特征、整数、步骤、操作、单元和/或组件的存在，而不排除存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。\n\n[0030]下面结合附图和实施例对本申请作进一步说明。\n\n[0031]如图1至图5所示，本申请实施例提供了一种背光结构1，包括：设置有多个背光分区100的基板100、设置在所述基板100一侧且与所述背光分区100对应的分区电路模块200、以及设置在所述基板100另一侧且与所述分区电路模块200对应的第一外接引脚21和第二外接引脚22，所述分区电路模块200与相应的所述第一外接引脚21和所述第二外接引脚22电连接；\n\n[0032]其中，所述分区电路模块200包括设置在相应的所述背光分区100中的多个发光单元210，每个所述分区电路模块200中的多个发光单元210均与相应的所述第一外接引脚21和所述第二外接引脚22电连接。\n\n[0033]可以理解的是，在一具体所述背光结构1中，可根据具体情况对背光结构1进行多个背光分区10的划分，当然，各所述背光分区10内发光单元210的数量以及呈矩阵排布的形式，可以相同也可以存在差异，如图1所示，本实施例中，所述背光分区10包括的发光单元210呈3×3的矩阵形式排布，显然，根据背光分区10划分的区域不同，也可以是呈其它矩阵形式排布，尤其是，可以存在呈单列或者单行的排布形式，值得注意的是，在一背光分区10中所述发光单元210的数量大于1。\n\n[0034]承上，通过将各所述背光分区10内的多个发光单元210集成在分区电路模块200内，然后以分区电路模块200为整体在基板100背面(也即所述基板100远离各所述发光单元210的一侧)引出与第一外接引脚21和第二外接引脚22电性连接，达到通过背光分区10复合多个发光单元210的效果，减少引脚数量，降低发光单元210密集排布造成工艺制作的复杂度，此外，可以理解的是，所述第一外接引脚21和第二外接引脚22可以分别作为分区电路模块200的正负极引脚。\n\n[0035]本实施例中，每一所述分区电路模块200至少包括两相互并联的分区支路220，各所述分区支路220中至少串联有一所述发光单元210，各所述分区支路220两端分别与相应所述分区电路模块200对应的所述第一外接引脚21和第二外接引脚22电性连接；具体的，如图2所示，以发光单元210呈3×3的矩阵形式排布为例，将位于同一行的各发光单元210依次串联形成分区支路220，然后将各分区支路220进行并联形成分区电路模块200；可以理解的是，在同一背光分区10中将各发光单元210复合的电路连接方式并不限于此，当然也可以是先以列中各发光单元210进行串联，然后将各列并联的形式进行复合；亦或者是将多列或多行的发光单元210进行串联，然后将各串联的部分并联，在此不再赘述。值得注意的是，具体的，由于并联的关系，各分区支路220的电压都相同，为便于控制的调光，本实施例中，各所述分区支路220中串联的发光单元210数量均相等。\n\n[0036]本实施例中，如图3所示，每一所述分区电路模块200中各所述发光单元210依次串联于所述第一外接引脚21与第二外接引脚22之间；可以理解的是，如前所述，在一背光分区10中各发光单元210可以存在呈单列或者单行的排布形式，具体的，可以将各发光单元210依次串联以形成分区电路模块200，值得注意的是，此种分区电路形式并不限于应用于当背光分区10中各发光单元210呈单列或者单行的排布形式时，也可应用在其它多种排布形式，只需将各发光单元210依次串联即可，当然，在具体应用中，为便于基板100上的电路布局和走线，一般应用于各发光单元210呈单列或者单行的排布形式。\n\n[0037]本实施例中，如图5所示，所述发光单元210包括设置于所述基板100上的灯杯211、设置于所述灯杯211内的mini LED芯片212、以及设置于所述灯杯211内且覆盖所述miniLED芯片212的封装层213；具体的，本实施例中，所述灯杯211的材料为聚邻苯二酰胺，使得灯杯211整体呈白色，所述封装层213的材料为可以透光的封装胶，所述封装层213内均匀分布有黄色荧光粉，通过黄色荧光粉的设置，使得发光单元210为提供白光的光源，此外，如图4所示，所述背光结构1还包括：设置在所述基板100一侧，且位于各所述发光单元210之间的反射层110，所述反射层110用于提高背光结构1中基板100表面的反射率，提高背光的利用率，具体的，所述反射层110的材料可以为白油，此外，根据具体的使用需要，所述基板100为柔性基板或刚性基板。\n\n[0038]本申请实施例还提供了一种背光结构1的制作方法，如图6所示，包括如下步骤：\n\n[0039]步骤S1，提供一基板100，所述背光结构1包括多个背光分区10；\n\n[0040]步骤S2，分别在各所述背光分区10内形成分区电路模块200、以及形成分别与所述分区电路模块200电性连接的第一外接引脚21和第二外接引脚22，所述分区电路模块200包括设置于所述基板100一侧且呈矩阵排布的多个发光单元210，所述第一外接引脚21和第二外接引脚22形成于所述基板100远离所述发光单元210的一侧。\n\n[0041]本实施例中，背光结构1的制作以采用SMT(Surface Mounted Technology表面贴装工艺)为例，但不限于运用此种工艺方式，可以理解的是，步骤S1中，所述背光结构1包括多个背光分区10，有一进行背光分区10的过程，需要充分考虑背光结构1(具体如IC芯片)驱动电流和电压能力，以上述如图2所示结构为例，发光单元210呈3×3的矩阵形式排布为例，若IC芯片单通道电压能力0-10V，电流能力0-20mA，则本申请采用图2所示的电路连接方式(可以根据需求的亮度，评估出发光单元210电流约1mA)。\n\n[0042]承上，本实施例中，步骤S2中，分别在各所述背光分区10内形成分区电路模块200包括：\n\n[0043]确定背光分区10内分区电路模块200的电路结构，然后在基板100上制作线路，具体可通过丝印的方式印刷制作；\n\n[0044]在所述基板100的背面(也即所述基板100远离各所述发光单元210的一侧)由前述分区电路模块200中的线路引出第一外接引脚21和第二外接引脚22；具体的，可以通过焊接的方式将分区电路模块200中的线路分别与第一外接引脚21和第二外接引脚22电性连接；显然，相对于现有背光结构1中每一发光单元210各对应两引脚的复杂结构，本申请只需第一外接引脚21和第二外接引脚22，极大的降低制作工艺的复杂度。\n\n[0045]在基板100上设置固定发光单元210，具体包括：采用贴片的方式将所述mini LED芯片212设置在所述基板100上，并通过回流焊的方式将所述mini LED芯片212固定在所述基板100上；值得注意的是，在贴片的过程中，可以是将一背光分区10中的各发光单元210作为一个整体进行贴片，以达到降低贴片工艺复杂度和精度的目的。此外，还包括灯杯211和封装层213的制作，在此不再赘述。\n\n[0046]本申请实施例又提供了一种显示装置，如图7所示，包括如前所述的背光结构1、和与背光结构1对应设置的LCD显示面板，该LCD显示面板可以包括依次层叠设置的TFT层2、液晶层3、彩膜层4等，背光结构1靠近TFT层2设置，显然，采用本申请所述的背光结构1，在满足超薄的条件下，使得显示装置也具备更好的局部调光效果。\n\n[0047]综上所述，本申请背光结构1通过划分多个背光分区10，并将背光分区10内的各发光单元210复合成一分区电路模块200，相对于每一发光单元210均需两焊接引脚进行布线连接，该所述分区电路模块200只需第一外接引脚21和第二外接引脚22的结构极大的减少了线路布设的复杂度，同时，每一背光分区10中各发光单元210之间的布线均集成于分区电路模块200内，相对于现有对背光结构1进行简单的分区实现调光的结构，本申请划分多个背光分区的结构使得线路更加精简，此外，在进行背光结构1的制作中，以分区电路模块200为单元整体制作，也解决由于数量繁多的miniLED排布过密影响基板100上进行SMT(Surface Mounted Technology表面贴装工艺)的问题，简化了基板100焊接引脚的制作。\n\n[0048]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10713, 23767, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种背光模组及显示装置。\n\n背景技术\n\n[0002]随着全面屏技术的发展，将显示装置的背光模组做面内开孔结构，作为摄像头放置区的结构的手机应用已经面向市场推出，无论是通孔或是盲孔，目前面内开孔结构的背光模组的孔内侧均无光源提供亮度，孔的作用仅是前置摄像头的进光通道。\n\n[0003]若加入导光元件以及额外的灯板等，虽然可以使光导向孔对应的面板区域，使此区域也能实现显示功能，但增加的零部件越多，越容易造成组装困难，需要另外对环形导光元件和灯板重新固定，而且现有工艺难以制作出环形的灯板。故，有必要改善这一缺陷。\n\n发明内容\n\n[0004]本发明实施例提供一种背光模组，用于解决现有技术的面内开孔结构的背光模组，由于在孔内侧增加导光元件以及额外的灯板，造成组装困难，需要对环形导光元件和环形灯板重新固定，且现有工艺难以制作出环形灯板的技术问题。\n\n[0005]本发明实施例提供一种背光模组，包括第一区和设置于所述第一区中的第二区。其中，所述第一区设置有背板。所述背板包括底板和连接所述底板的侧板。所述底板在所述第二区内为通孔。所述侧板环绕所述第二区。其中，所述第二区设置有环形柔性电路板以及导光构件，所述环形柔性电路板的内侧表面上设置有光源。所述环形柔性电路板与所述侧板固定连接。所述导光构件设置于所述环形柔性电路板的内侧。\n\n[0006]进一步的，所述光源为迷你LED或者微型LED。\n\n[0007]进一步的，所述迷你LED或者所述微型LED的形状为圆形、三角形、矩形中的任一种。\n\n[0008]进一步的，所述光源等间距分布。\n\n[0009]进一步的，所述环形柔性电路板与所述侧板的连接方式为胶连或者磁性连接。\n\n[0010]进一步的，所述背光模组还包括导光板、主光源和光学膜片，所述导光板设置于所述底板上，所述光学膜片设置于所述导光板上，所述主光源设置于所述导光板的一侧。\n\n[0011]本发明实施例提供一种显示装置，包括显示面板、背光模组以及电子元件。所述背光模组设置于所述显示面板的入光面。所述背光模组包括第一区和设置于所述第一区中的第二区。其中，所述第一区设置有背板。所述背板包括底板和连接所述底板的侧板。所述底板在所述第二区内为通孔。所述侧板环绕所述第二区。其中，所述第二区设置有环形柔性电路板以及导光构件。所述环形柔性电路板的内侧表面上设置有光源。所述环形柔性电路板与所述侧板固定连接。所述导光构件设置于所述环形柔性电路板的内侧。其中，所述电子元件设置于所述通孔内。\n\n[0012]进一步的，所述电子元件为摄像头。\n\n[0013]进一步的，所述光源为迷你LED或者微型LED。\n\n[0014]进一步的，所述环形柔性电路板与所述侧板的连接方式为胶连或者磁性连接。\n\n[0015]有益效果:本发明实施例提供的背光模组，通过在面内开孔区域增加侧向光源和导光构件，将光源设置在环形柔性电路板内侧表面上，将环形柔性电路板外侧与背板的侧壁固定连接的方式，减小了组装工艺难度，且在导光构件的作用下，将光源散射的光线偏折向面内开孔的上方区域，既可以达到显示的基本功能，又可以使光源的固定工艺简单很多，不需要改造机台即可实现。\n\n附图说明\n\n[0016]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0017]图1是本发明实施例提供的背光模组的截面示意图。\n\n[0018]图2是本发明实施例提供的环形柔性电路板的展开示意图。\n\n[0019]图3是本发明实施例提供的环形柔性电路板的俯视示意图。\n\n[0020]图4是本发明实施例提供的导光构件的固定结构示意图。\n\n[0021]图5是本发明实施例提供的显示装置的截面示意图。\n\n具体实施方式\n\n[0022]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0023]如图1所示，本发明实施例提供的背光模组的截面示意图，从图中可以很直观地看到本发明的各组成部分，以及各组成部分之间的相对位置关系，所述背光模组包括第一区和设置于所述第一区中的第二区。其中，所述第一区设置有背板，所述背板包括底板101和连接所述底板101的侧板102，所述底板101在所述第二区内为通孔103，所述侧板102环绕所述第二区。其中，所述第二区设置有环形柔性电路板104以及导光构件105，所述环形柔性电路板104的内侧表面上设置有光源(图中未示出)，所述环形柔性电路板104与所述侧板102固定连接；所述导光构件105设置于所述环形柔性电路板104的内侧。\n\n[0024]需要说明的是，图中所示的第一区对应于显示装置的显示区，图中所示的第二区对应于显示装置的通孔区，所述显示装置的通孔至少为一个。\n\n[0025]在一种实施例中，所述背板包括一体成形的底板101和侧板102，所述底板101的材料可以为铁质等金属材料，所述侧板102的材料可以与所述底板101的材料相同或者不同。所述背板可与胶框(图中未示出)搭配对整个背光模组起支撑作用，并且可以用来固定显示装置的驱动芯片。\n\n[0026]在一种实施例中，所述环形柔性电路板104与所述侧板102固定连接，具体地，所述环形柔性电路板104与所述侧板102的连接方式为胶连或者磁性连接，即在所述环形柔性电路板104的外侧表面上贴胶，通过胶与所述侧板102粘连，从而固定所述环形电路板104以及所述环形电路板104上的光源(图中未示出)，或者在所述环形柔性电路板104的外侧表面上设置磁性材料，通过所述磁性材料与所述侧板102磁性连接，从而固定所述环形电路板104以及所述环形电路板104上的光源(图中未示出)，减小了组装工艺难度。\n\n[0027]在一种实施例中，所述导光构件105设置于所述环形柔性电路板104的内侧，所述环形柔性电路板上的光源(图中未示出)散射的光线通过所述导光构件偏折向面内开孔的上方区域，从而可以实现面内开孔区域的显示功能。\n\n[0028]在一种实施例中，所述背光模组还包括导光板106、主光源107和光学膜片108，所述导光板106设置于所述底板101上，所述光学膜片108设置于所述导光板106上，所述主光源107设置于所述导光板106的一侧。\n\n[0029]如图2所示，本发明实施例提供的环形柔性电路板的展开示意图，所述环形柔性电路板在装配组装前为条形的柔性电路板201，所述条形的柔性电路板201上设置有多个光源202。\n\n[0030]在一种实施例中，所述光源202为迷你LED或者微型LED。\n\n[0031]在一种实施例中，所述迷你LED或者所述微型LED的形状为圆形、三角形、矩形中的任一种，图中以矩形为例示出。\n\n[0032]需要说明的是，图中将多个迷你LED或者微型LED芯片集成封装在同一片电路板上的封装技术为COB(Chip on board)技术。\n\n[0033]具体地，COB技术就是将裸芯片用导电或者非导电胶粘附在互联基板上，然后进行引线键合实现其电气连接。如果裸芯片直接暴露在空气中，易受污染或人为损坏，影响或破坏芯片功能，于是就用胶把芯片和键合引线包封起来，这种封装形式为软包封。\n\n[0034]如图3所示，本发明实施例提供的环形柔性电路板的俯视示意图，即装配后的环形柔性电路板301，所述环形柔性电路板301的内侧表面上设置有多个光源302。\n\n[0035]在一种实施例中，所述光源302的数量大于或者等于3个，图中以4个为例示出。\n\n[0036]在一种实施例中，所述光源302等间距分布。\n\n[0037]在一种实施例中，所述光源302为迷你LED或者微型LED，迷你LED或者微型LED均属于点光源，点光源是一种常见的光源，而传统的工艺很难制作出小型的环形光源，本发明通过在柔性电路板的表面设置点光源，然后将柔性电路板弯曲成环形，从而实现了环形发光的功能，且制作简便，不需要改造机台，节约了生产成本。\n\n[0038]如图4所示，本发明实施例提供的导光构件的固定结构示意图，背光模组包括背板、环形柔性电路板403以及导光构件404，所述背板包括底板401和连接所述底板401的侧板402。其中，所述环形柔性电路板403的内侧表面上设置有光源(图中未示出)，所述环形柔性电路板403与所述侧板402固定连接，所述导光构件404设置于所述环形柔性电路板403的内侧，所述导光构件404的底端形成有一凸起405，所述凸起405通过粘性材料406与所述底板401固定连接，从而实现所述导光构件404的固定。\n\n[0039]在一种实施例中，所述粘性材料406为光学胶。\n\n[0040]如图5所示，本发明实施例提供的显示装置的截面示意图，从图中可以很直观地看到本发明的各组成部分，以及各组成部分之间的相对位置关系，所述显示装置包括显示面板501、背光模组以及电子元件502，所述背光模组设置于所述显示面板501的入光面，所述背光模组包括第一区和设置于所述第一区中的第二区。其中，所述第一区设置有背板，所述背板包括底板503和连接所述底板503的侧板504，所述底板503在所述第二区内为通孔505，所述侧板504环绕所述第二区。其中，所述第二区设置有环形柔性电路板506以及导光构件507，所述环形柔性电路板506的内侧表面上设置有光源(图中未示出)，所述环形柔性电路板506与所述侧板504固定连接；所述导光构件507设置于所述环形柔性电路板506的内侧。其中，所述电子元件502设置于所述通孔505内，具体地，所述电子元件502设置于所述通孔505的下方。\n\n[0041]需要说明的是，图中所示的第一区对应于显示装置的显示区，图中所示的第二区对应于显示装置的通孔区，所述显示装置的通孔至少为一个。\n\n[0042]在一种实施例中，所述背光模组还包括导光板508、主光源509和光学膜片510，所述导光板508设置于所述底板503上，所述光学膜片510设置于所述导光板508上，所述主光源509设置于所述导光板508的一侧。\n\n[0043]在一种实施例中，所述电子元件502为摄像头，所述通孔区域不仅可以作为摄像头的进光区域，还可以利用所述环形柔性电路板506上的光源(图中未示出)散射的光线，通过所述导光构件507偏折向面内开孔的上方区域，实现基本的色块和信息的显示功能。\n\n[0044]在一种实施例中，所述光源(图中未示出)为迷你LED或者微型LED。\n\n[0045]在一种实施例中，所述环形柔性电路板506与所述侧板504的连接方式为胶连或者磁性连接，即在所述环形柔性电路板506的外侧表面上贴胶，通过胶与所述侧板504粘连，从而固定所述环形电路板506以及所述环形电路板506上的光源(图中未示出)，或者在所述环形柔性电路板506的外侧表面上设置磁性材料，通过所述磁性材料与所述侧板504磁性连接，从而固定所述环形电路板506以及所述环形电路板506上的光源(图中未示出)，减小了组装工艺难度。\n\n[0046]综上所述，本发明实施例提供的一种背光模组，通过在面内开孔区域增加侧向光源和导光构件，将光源设置在环形柔性电路板内侧表面上，将环形柔性电路板外侧与背板的侧壁固定连接的方式，减小了组装工艺难度，且在导光构件的作用下，将光源散射的光线偏折向面内开孔的上方区域，既可以达到显示的基本功能，又可以使光源的固定工艺简单很多，不需要改造机台即可实现，解决了现有技术的面内开孔结构的背光模组，由于在孔内侧增加导光元件以及额外的灯板，造成组装困难，需要对环形导光元件和环形灯板重新固定，且现有工艺难以制作出环形灯板的技术问题。\n\n[0047]以上对本发明实施例所提供的一种背光模组及显示装置进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种背光模组及显示装置。\n\n背景技术\n\n[0002]随着全面屏技术的发展，将显示装置的背光模组做面内开孔结构，作为摄像头放置区的结构的手机应用已经面向市场推出，无论是通孔或是盲孔，目前面内开孔结构的背光模组的孔内侧均无光源提供亮度，孔的作用仅是前置摄像头的进光通道。\n\n[0003]若加入导光元件以及额外的灯板等，虽然可以使光导向孔对应的面板区域，使此区域也能实现显示功能，但增加的零部件越多，越容易造成组装困难，需要另外对环形导光元件和灯板重新固定，而且现有工艺难以制作出环形的灯板。故，有必要改善这一缺陷。\n\n发明内容\n\n[0004]本发明实施例提供一种背光模组，用于解决现有技术的面内开孔结构的背光模组，由于在孔内侧增加导光元件以及额外的灯板，造成组装困难，需要对环形导光元件和环形灯板重新固定，且现有工艺难以制作出环形灯板的技术问题。\n\n[0005]本发明实施例提供一种背光模组，包括第一区和设置于所述第一区中的第二区。其中，所述第一区设置有背板。所述背板包括底板和连接所述底板的侧板。所述底板在所述第二区内为通孔。所述侧板环绕所述第二区。其中，所述第二区设置有环形柔性电路板以及导光构件，所述环形柔性电路板的内侧表面上设置有光源。所述环形柔性电路板与所述侧板固定连接。所述导光构件设置于所述环形柔性电路板的内侧。\n\n[0006]进一步的，所述光源为迷你LED或者微型LED。\n\n[0007]进一步的，所述迷你LED或者所述微型LED的形状为圆形、三角形、矩形中的任一种。\n\n[0008]进一步的，所述光源等间距分布。\n\n[0009]进一步的，所述环形柔性电路板与所述侧板的连接方式为胶连或者磁性连接。\n\n[0010]进一步的，所述背光模组还包括导光板、主光源和光学膜片，所述导光板设置于所述底板上，所述光学膜片设置于所述导光板上，所述主光源设置于所述导光板的一侧。\n\n[0011]本发明实施例提供一种显示装置，包括显示面板、背光模组以及电子元件。所述背光模组设置于所述显示面板的入光面。所述背光模组包括第一区和设置于所述第一区中的第二区。其中，所述第一区设置有背板。所述背板包括底板和连接所述底板的侧板。所述底板在所述第二区内为通孔。所述侧板环绕所述第二区。其中，所述第二区设置有环形柔性电路板以及导光构件。所述环形柔性电路板的内侧表面上设置有光源。所述环形柔性电路板与所述侧板固定连接。所述导光构件设置于所述环形柔性电路板的内侧。其中，所述电子元件设置于所述通孔内。\n\n[0012]进一步的，所述电子元件为摄像头。\n\n[0013]进一步的，所述光源为迷你LED或者微型LED。\n\n[0014]进一步的，所述环形柔性电路板与所述侧板的连接方式为胶连或者磁性连接。\n\n[0015]有益效果:本发明实施例提供的背光模组，通过在面内开孔区域增加侧向光源和导光构件，将光源设置在环形柔性电路板内侧表面上，将环形柔性电路板外侧与背板的侧壁固定连接的方式，减小了组装工艺难度，且在导光构件的作用下，将光源散射的光线偏折向面内开孔的上方区域，既可以达到显示的基本功能，又可以使光源的固定工艺简单很多，不需要改造机台即可实现。\n\n附图说明\n\n[0016]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0017]图1是本发明实施例提供的背光模组的截面示意图。\n\n[0018]图2是本发明实施例提供的环形柔性电路板的展开示意图。\n\n[0019]图3是本发明实施例提供的环形柔性电路板的俯视示意图。\n\n[0020]图4是本发明实施例提供的导光构件的固定结构示意图。\n\n[0021]图5是本发明实施例提供的显示装置的截面示意图。\n\n具体实施方式\n\n[0022]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0023]如图1所示，本发明实施例提供的背光模组的截面示意图，从图中可以很直观地看到本发明的各组成部分，以及各组成部分之间的相对位置关系，所述背光模组包括第一区和设置于所述第一区中的第二区。其中，所述第一区设置有背板，所述背板包括底板101和连接所述底板101的侧板102，所述底板101在所述第二区内为通孔103，所述侧板102环绕所述第二区。其中，所述第二区设置有环形柔性电路板104以及导光构件105，所述环形柔性电路板104的内侧表面上设置有光源(图中未示出)，所述环形柔性电路板104与所述侧板102固定连接；所述导光构件105设置于所述环形柔性电路板104的内侧。\n\n[0024]需要说明的是，图中所示的第一区对应于显示装置的显示区，图中所示的第二区对应于显示装置的通孔区，所述显示装置的通孔至少为一个。\n\n[0025]在一种实施例中，所述背板包括一体成形的底板101和侧板102，所述底板101的材料可以为铁质等金属材料，所述侧板102的材料可以与所述底板101的材料相同或者不同。所述背板可与胶框(图中未示出)搭配对整个背光模组起支撑作用，并且可以用来固定显示装置的驱动芯片。\n\n[0026]在一种实施例中，所述环形柔性电路板104与所述侧板102固定连接，具体地，所述环形柔性电路板104与所述侧板102的连接方式为胶连或者磁性连接，即在所述环形柔性电路板104的外侧表面上贴胶，通过胶与所述侧板102粘连，从而固定所述环形电路板104以及所述环形电路板104上的光源(图中未示出)，或者在所述环形柔性电路板104的外侧表面上设置磁性材料，通过所述磁性材料与所述侧板102磁性连接，从而固定所述环形电路板104以及所述环形电路板104上的光源(图中未示出)，减小了组装工艺难度。\n\n[0027]在一种实施例中，所述导光构件105设置于所述环形柔性电路板104的内侧，所述环形柔性电路板上的光源(图中未示出)散射的光线通过所述导光构件偏折向面内开孔的上方区域，从而可以实现面内开孔区域的显示功能。\n\n[0028]在一种实施例中，所述背光模组还包括导光板106、主光源107和光学膜片108，所述导光板106设置于所述底板101上，所述光学膜片108设置于所述导光板106上，所述主光源107设置于所述导光板106的一侧。\n\n[0029]如图2所示，本发明实施例提供的环形柔性电路板的展开示意图，所述环形柔性电路板在装配组装前为条形的柔性电路板201，所述条形的柔性电路板201上设置有多个光源202。\n\n[0030]在一种实施例中，所述光源202为迷你LED或者微型LED。\n\n[0031]在一种实施例中，所述迷你LED或者所述微型LED的形状为圆形、三角形、矩形中的任一种，图中以矩形为例示出。\n\n[0032]需要说明的是，图中将多个迷你LED或者微型LED芯片集成封装在同一片电路板上的封装技术为COB(Chip on board)技术。\n\n[0033]具体地，COB技术就是将裸芯片用导电或者非导电胶粘附在互联基板上，然后进行引线键合实现其电气连接。如果裸芯片直接暴露在空气中，易受污染或人为损坏，影响或破坏芯片功能，于是就用胶把芯片和键合引线包封起来，这种封装形式为软包封。\n\n[0034]如图3所示，本发明实施例提供的环形柔性电路板的俯视示意图，即装配后的环形柔性电路板301，所述环形柔性电路板301的内侧表面上设置有多个光源302。\n\n[0035]在一种实施例中，所述光源302的数量大于或者等于3个，图中以4个为例示出。\n\n[0036]在一种实施例中，所述光源302等间距分布。\n\n[0037]在一种实施例中，所述光源302为迷你LED或者微型LED，迷你LED或者微型LED均属于点光源，点光源是一种常见的光源，而传统的工艺很难制作出小型的环形光源，本发明通过在柔性电路板的表面设置点光源，然后将柔性电路板弯曲成环形，从而实现了环形发光的功能，且制作简便，不需要改造机台，节约了生产成本。\n\n[0038]如图4所示，本发明实施例提供的导光构件的固定结构示意图，背光模组包括背板、环形柔性电路板403以及导光构件404，所述背板包括底板401和连接所述底板401的侧板402。其中，所述环形柔性电路板403的内侧表面上设置有光源(图中未示出)，所述环形柔性电路板403与所述侧板402固定连接，所述导光构件404设置于所述环形柔性电路板403的内侧，所述导光构件404的底端形成有一凸起405，所述凸起405通过粘性材料406与所述底板401固定连接，从而实现所述导光构件404的固定。\n\n[0039]在一种实施例中，所述粘性材料406为光学胶。\n\n[0040]如图5所示，本发明实施例提供的显示装置的截面示意图，从图中可以很直观地看到本发明的各组成部分，以及各组成部分之间的相对位置关系，所述显示装置包括显示面板501、背光模组以及电子元件502，所述背光模组设置于所述显示面板501的入光面，所述背光模组包括第一区和设置于所述第一区中的第二区。其中，所述第一区设置有背板，所述背板包括底板503和连接所述底板503的侧板504，所述底板503在所述第二区内为通孔505，所述侧板504环绕所述第二区。其中，所述第二区设置有环形柔性电路板506以及导光构件507，所述环形柔性电路板506的内侧表面上设置有光源(图中未示出)，所述环形柔性电路板506与所述侧板504固定连接；所述导光构件507设置于所述环形柔性电路板506的内侧。其中，所述电子元件502设置于所述通孔505内，具体地，所述电子元件502设置于所述通孔505的下方。\n\n[0041]需要说明的是，图中所示的第一区对应于显示装置的显示区，图中所示的第二区对应于显示装置的通孔区，所述显示装置的通孔至少为一个。\n\n[0042]在一种实施例中，所述背光模组还包括导光板508、主光源509和光学膜片510，所述导光板508设置于所述底板503上，所述光学膜片510设置于所述导光板508上，所述主光源509设置于所述导光板508的一侧。\n\n[0043]在一种实施例中，所述电子元件502为摄像头，所述通孔区域不仅可以作为摄像头的进光区域，还可以利用所述环形柔性电路板506上的光源(图中未示出)散射的光线，通过所述导光构件507偏折向面内开孔的上方区域，实现基本的色块和信息的显示功能。\n\n[0044]在一种实施例中，所述光源(图中未示出)为迷你LED或者微型LED。\n\n[0045]在一种实施例中，所述环形柔性电路板506与所述侧板504的连接方式为胶连或者磁性连接，即在所述环形柔性电路板506的外侧表面上贴胶，通过胶与所述侧板504粘连，从而固定所述环形电路板506以及所述环形电路板506上的光源(图中未示出)，或者在所述环形柔性电路板506的外侧表面上设置磁性材料，通过所述磁性材料与所述侧板504磁性连接，从而固定所述环形电路板506以及所述环形电路板506上的光源(图中未示出)，减小了组装工艺难度。\n\n[0046]综上所述，本发明实施例提供的一种背光模组，通过在面内开孔区域增加侧向光源和导光构件，将光源设置在环形柔性电路板内侧表面上，将环形柔性电路板外侧与背板的侧壁固定连接的方式，减小了组装工艺难度，且在导光构件的作用下，将光源散射的光线偏折向面内开孔的上方区域，既可以达到显示的基本功能，又可以使光源的固定工艺简单很多，不需要改造机台即可实现，解决了现有技术的面内开孔结构的背光模组，由于在孔内侧增加导光元件以及额外的灯板，造成组装困难，需要对环形导光元件和环形灯板重新固定，且现有工艺难以制作出环形灯板的技术问题。\n\n[0047]以上对本发明实施例所提供的一种背光模组及显示装置进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。');
INSERT INTO `os_patent_instruction_text` VALUES (10714, 23768, '技术领域\n\n[0001]本申请涉及面板制造技术领域，特别涉及一种拼装显示面板和拼装显示面板的制程方法。\n\n背景技术\n\n[0002]微型发光二极管(Mini/Micro-Light Emitting Diode,Mini/Micro-LED)显示作为下一代显示技术，优秀的显示效果，色彩还原性强，宽视角，高刷新率，高对比度，高稳定性，低功耗，高灰度等优势，显现出比液晶显示(Liquid Crystal Display,LCD)和有机发光二极管(Organic Light Emitting Diode,OLED)显示更优异的性能。从长远来看，随着转移等关键技术的突破，微型发光二极管或将全面进入从小屏到大屏的各类显示领域。\n\n[0003]然而现在的微信发光二极管显示面板在拼接过程中还是存在较大的缝隙，不利于显示面板的显示效果。因此，提供一种拼接缝隙较小的显示面板成为本领域技术人员亟待解决的技术问题。\n\n发明内容\n\n[0004]本申请实施例提供一种拼装显示面板和拼装显示面板的制程方法。可以减小拼装显示面板的拼接缝隙。\n\n[0005]本申请实施例提供一种拼装显示面板，包括多个微型显示面板和玻璃基板，多个所述微型显示面板紧密拼接且设置在所述玻璃基板上；\n\n[0006]其中，所述微型显示面板包括柔性基板、固晶层、密封胶层以及微型发光二极管芯片；所述柔性基板具有相对设置的第一面和第二面，所述第一面具有一有效显示区，所述固晶层黏贴在所述柔性基板的第一面且与所述有效显示区对应，所述密封胶层设置在所述固晶层远离所述柔性基板的一面，所述密封胶层与所述固晶层对应，所述微型发光二极管芯片设置在所述密封胶层远离所述固晶层的一面，所述微型发光二极管芯片与所述有效显示区对应。\n\n[0007]在一些实施中，所述柔性基板为矩形，所述有效显示区也有矩形，所述有效显示区的其中一个边角与所述柔性基板的一个边角对齐，所述柔性基板上有设有直角缺口，所述直角缺口位于所述柔性基板和所述有效显示区对齐的边角的对角位置。\n\n[0008]在一些实施中，所述微型显示面板还包括源极走线和漏极走线，所述源极走线和漏极走线位于所述有效显示区边缘的所述柔性基板上。\n\n[0009]在一些实施中，所述固晶层与柔性基板之间的平整度小于10μm。\n\n[0010]本申请实施例还提供一种拼装显示面板的制程方法，包括：\n\n[0011]提供一柔性基板基板，所述柔性基板具有相对设置的第一面和第二面，所述第一面具有一有效显示区；\n\n[0012]在所述柔性基板的第一面黏贴固晶层；\n\n[0013]在所述固晶层远离所述柔性基板的一面设置密封胶层；\n\n[0014]在所述密封胶层远离所述固晶层的一面设置有微型发光二极管芯片，所述微型发光二极管芯片与所述有效显示区对应以形成微型显示面板；\n\n[0015]将所述有效显示区边缘的所述固晶层和密封胶层通过激光剥离；\n\n[0016]将多个所述微型显示面板紧密拼接，并设置在玻璃基板上。\n\n[0017]在一些实施中，所述将所述有效显示区边缘的所述固晶层和密封胶层通过激光玻璃之后，包括：\n\n[0018]将所述有效显示区的其中一个边角与所述柔性基板的一个边角对齐，所述柔性基板上有切割一个直角缺口，所述直角缺口位于所述柔性基板和所述有效显示区对齐的边角的对角位置。\n\n[0019]在一些实施中，所述柔性基板上有切割一个直角缺口，包括：\n\n[0020]通过激光切割的方式在柔性基板上切割出直角缺口。\n\n[0021]在一些实施中，所述将所述有效显示区边缘的所述固晶层和密封胶层通过激光剥离之后：\n\n[0022]将源极走线和漏极走线设置于所述有效显示区边缘的所述柔性基板上。\n\n[0023]在一些实施中，所述固晶层与柔性基板之间的平整度小于10μm。\n\n[0024]在一些实施中，所述在所述密封胶层远离所述固晶层的一面设置有微型发光二极管芯片，包括：\n\n[0025]通过固晶工艺的方式将微型发光二极管芯片设置在所述密封胶层上。\n\n[0026]本申请实施例中提供拼装显示面板和拼装显示面板的制程方法，本申请实施例的拼装显示面板，包括多个微型显示面板和玻璃基板，多个所述微型显示面板紧密拼接且设置在所述玻璃基板上；其中，所述微型显示面板包括柔性基板、固晶层、密封胶层以及微型发光二极管芯片；所述柔性基板具有相对设置的第一面和第二面，所述第一面具有一有效显示区，所述固晶层黏贴在所述柔性基板的第一面且与所述有效显示区对应，所述密封胶层设置在所述固晶层远离所述柔性基板的一面，所述密封胶层与所述固晶层对应，所述微型发光二极管芯片设置在所述密封胶层远离所述固晶层的一面，所述微型发光二极管芯片与所述有效显示区对应。本申请实施例中拼装显示面板可以减小拼装显示面板的拼装缝隙。\n\n附图说明\n\n[0027]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。\n\n[0028]图1为本申请实施例中拼装显示面板的结构示意图。\n\n[0029]图2为本申请实施例中微型显示面板的结构示意图。\n\n[0030]图3为本申请实施例中拼装显示面板的制程方法流程示意图。\n\n[0031]图4为本申请实施例中微型显示面板的制程方法场景示意图。\n\n[0032]图5为本申请实施例中拼装显示面板的制程方法场景示意图。\n\n具体实施方式\n\n[0033]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0034]本申请实施例中提供一种彩膜基板和显示面板。以下对本申请实施例的彩膜基板做详细介绍。\n\n[0035]请参阅图1和图2，图1为本申请实施例中拼装显示面板100的结构示意图。图2为本申请实施例中微型显示面板10的结构示意图。其中，本申请实施例提供一种拼装显示面板100，拼装显示面板100包括多个微型显示面板10和玻璃基板20，多个所述微型显示面板10紧密拼接且设置在所述玻璃基板20上。其中，所述微型显示面板10包括柔性基板11、固晶层12、密封胶层13以及微型发光二极管芯片14；所述柔性基板11具有相对设置的第一面11a和第二面11b，所述第一面11a具有一有效显示区111，所述固晶层12黏贴在所述柔性基板11的第一面11a且与所述有效显示区111对应，所述密封胶层13设置在所述固晶层12远离所述柔性基板11的一面，所述密封胶层13与所述固晶层12对应，所述微型发光二极管芯片14设置在所述密封胶层13远离所述固晶层12的一面，所述微型发光二极管芯片14与所述有效显示区111对应。\n\n[0036]需要说明的是，有效显示区111(Active Area,AA)指的是显示屏中显示文字图形的可操作区域。\n\n[0037]需要说明的是，第一面11a可以为柔性基板11的上表面，第二面11b可以为柔性基板11的下表面。当然，第一面11a也可以为柔性基板11的下表面，第二面11b可以为柔性基板11的上表面。本申请实施例中不做特殊说明的情况下，默认为第一面11a为柔性基板11的上表面，第二面11b为柔性基板11的下表面。\n\n[0038]需要说明的是，柔性基板11的面积大于有效显示区111的面积，密封胶层13、固晶层12以及微型发光二极光与有效显示区111对应，由于柔性基板11的面积大于有效显示区111的面积，因此，微型发光二极管芯片的边缘还具有柔性基板11的延边，当微型显示面板10在拼装时，微型发光二极管芯片紧密接触，在缝隙处可以被柔性基板11的延边包住，这样使得拼装显示面板100的缝隙被遮挡。且微型显示面板10紧密接触都会使得拼装显示面板100的拼装缝隙减小。\n\n[0039]在本申请的描述中，需要理解的是，术语“上”、“下”、“前”、“后”、“左”、“右”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0040]其中，所述柔性基板11为矩形，所述有效显示区111也有矩形，所述有效显示区111的其中一个边角与所述柔性基板11的一个边角对齐，所述柔性基板11上有设有直角缺口112，所述直角缺口112位于所述柔性基板11和所述有效显示区111对齐的边角的对角位置。\n\n[0041]需要说明的是，所述柔性基板11可以为长方形、正方形等，本申请实施例中对柔性基板11的形状不做过多赘述。另外的，所述柔性基板11上有设有直角缺口112，所述直角缺口112位于所述柔性基板11和所述有效显示区111对齐的边角的对角位置。因为设置有该直角缺口112，因此在微型显示面板10拼装的过程，不会使得直角缺口112处的柔性基板11重叠，从而保证拼装显示面板100的平整程度，从而提高显示面板的显示品质。\n\n[0042]另外的，可以通过激光切割的方式切割形成直角缺口112，当然，直角缺口112还可以通过其他切割方式形成。本申请实施例中对于直角缺口112的形成方式不做限定。\n\n[0043]其中，所述微型显示面板10还包括源极走线15和漏极走线16，所述源极走线15和漏极走线16位于所述微型发光二极管芯片边缘的所述柔性基板11上。\n\n[0044]需要说明的是，源极走线15沿所述柔性基板11横向设置，漏极走线16沿所述柔性基板11竖直设置。另外的，将所述源极走线15和漏极走线16位于所述微型发光二极管芯片边缘的所述柔性基板11上。当微型显示面板10在拼装时，源极走线15和漏极走线16可以隐藏在微型显示面板10的背光侧。这样更有益于缩小拼装显示面板100的缝隙。\n\n[0045]其中，所述固晶层12与柔性基板11之间的平整度小于10μm。\n\n[0046]需要说明的是，将所述固晶层12与柔性基板11之间的平整度小于10μm。这样可以保证显示面板的品质。\n\n[0047]本申请实施例的拼装显示面板100，包括多个微型显示面板10和玻璃基板20，多个所述微型显示面板10紧密拼接且设置在所述玻璃基板20上；其中，所述微型显示面板10包括柔性基板11、固晶层12、密封胶层13以及微型发光二极管芯片14；所述柔性基板11具有相对设置的第一面11a和第二面11b，所述第一面11a具有一有效显示区111，所述固晶层12黏贴在所述柔性基板11的第一面11a且与所述有效显示区111对应，所述密封胶层13设置在所述固晶层12远离所述柔性基板11的一面，所述密封胶层13与所述固晶层12对应，所述微型发光二极管芯片14设置在所述密封胶层13远离所述固晶层12的一面，所述微型发光二极管芯片14与所述有效显示区111对应。本申请实施例中拼装显示面板100可以减小拼装显示面板100的拼装缝隙。\n\n[0048]请参阅图3，图3为本申请实施例中微型显示面板的结构示意图。其中，本申请实施例还提供一种拼装显示面板的制程方法，包括：\n\n[0049]201、提供一柔性基板基板，所述柔性基板具有相对设置的第一面和第二面，所述第一面具有一有效显示区。\n\n[0050]需要说明的是，有效显示区(Active Area,AA)指的是显示屏中显示文字图形的可操作区域。另外的，第一面可以为柔性基板的上表面，第二面可以为柔性基板的下表面。当然，第一面也可以为柔性基板的下表面，第二面可以为柔性基板的上表面。本申请实施例中不做特殊说明的情况下，默认为第一面为柔性基板的上表面，第二面为柔性基板的下表面。\n\n[0051]202、在所述柔性基板的第一面黏贴固晶层。\n\n[0052]需要说明的是，固晶层是通过固晶工艺在所述柔性基板上形成，所述固晶工艺主要是将微型发光二极管芯片固定在所述柔性基板上。\n\n[0053]203、在所述固晶层远离所述柔性基板的一面设置所述密封胶层。\n\n[0054]需要说明的是，密封胶层书通过精密封装工艺在所述柔性基板上形成，所述密封胶层主要是将微型发光二极管芯片密封在所述柔性基板上。\n\n[0055]204、在所述密封胶层远离所述固晶层的一面设置有微型发光二极管芯片，所述微型发光二极管芯片与所述有效显示区对应以形成微型显示面板。\n\n[0056]205、将所述有效显示区边缘的所述固晶层和密封胶层通过激光剥离。\n\n[0057]需要说明的是，还可以通过其他方式剥离将所述有效显示区边缘的所述固晶层和密封胶层。本申请实施例中，所述有效显示区边缘的所述固晶层和密封胶层剥离方式不限于此。\n\n[0058]206、将多个所述微型显示面板紧密拼接，并设置在玻璃基板上。\n\n[0059]需要说明的是，微型显示面板可以包括二个、三个、二十个、三十个等。本申请实施例中对微型显示面板的具体数量不做限定。\n\n[0060]另外的，请参阅图4，图4为本申请实施例中拼装显示面板的制程方法场景示意图。具体制程方式已经在上述实施例中描述，在此不做过多赘述。\n\n[0061]其中，所述将所述有效显示区边缘的所述固晶层和密封胶层通过激光玻璃之后，包括：\n\n[0062]将所述有效显示区的其中一个边角与所述柔性基板的一个边角对齐，所述柔性基板上有切割一个直角缺口，所述直角缺口位于所述柔性基板和所述有效显示区对齐的边角的对角位置。\n\n[0063]需要说明的是，所述柔性基板上有设有直角缺口，所述直角缺口位于所述柔性基板和所述有效显示区对齐的边角的对角位置。因为设置有该直角缺口，因此在微型显示面板拼装的过程，不会使得直角缺口处的柔性基板重叠，从而保证拼装显示面板的平整程度，从而提高显示面板的显示品质。\n\n[0064]另外的，本申请实施例中通过激光切割的方式在柔性基板上切割出直角缺口。\n\n[0065]其中，所述将所述有效显示区边缘的所述固晶层和密封胶层通过激光剥离之后：\n\n[0066]将源极走线和漏极走线设置于所述有效显示区边缘的所述柔性基板上。\n\n[0067]需要说明的是，源极走线沿所述柔性基板横向设置，漏极走线沿所述柔性基板竖直设置。另外的，将所述源极走线和漏极走线位于所述微型发光二极管芯片边缘的所述柔性基板上。当微型显示面板在拼装时，源极走线和漏极走线可以隐藏在微型显示面板的背光侧。这样更有益于缩小拼装显示面板的缝隙。\n\n[0068]其中，所述固晶层与柔性基板之间的平整度小于10μm。\n\n[0069]需要说明的是，将所述固晶层与柔性基板之间的平整度小于10μm。这样可以保证显示面板的品质。\n\n[0070]另外的，请参阅图5，图5为本申请实施例中微型显示面板的制程方法场景示意图。具体制程方式已经在上述实施例中描述，在此不做过多赘述。\n\n[0071]以上对本申请实施例提供的一种拼装显示面板和拼装显示面板的制程方法进行了详细介绍。本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及面板制造技术领域，特别涉及一种拼装显示面板和拼装显示面板的制程方法。\n\n背景技术\n\n[0002]微型发光二极管(Mini/Micro-Light Emitting Diode,Mini/Micro-LED)显示作为下一代显示技术，优秀的显示效果，色彩还原性强，宽视角，高刷新率，高对比度，高稳定性，低功耗，高灰度等优势，显现出比液晶显示(Liquid Crystal Display,LCD)和有机发光二极管(Organic Light Emitting Diode,OLED)显示更优异的性能。从长远来看，随着转移等关键技术的突破，微型发光二极管或将全面进入从小屏到大屏的各类显示领域。\n\n[0003]然而现在的微信发光二极管显示面板在拼接过程中还是存在较大的缝隙，不利于显示面板的显示效果。因此，提供一种拼接缝隙较小的显示面板成为本领域技术人员亟待解决的技术问题。\n\n发明内容\n\n[0004]本申请实施例提供一种拼装显示面板和拼装显示面板的制程方法。可以减小拼装显示面板的拼接缝隙。\n\n[0005]本申请实施例提供一种拼装显示面板，包括多个微型显示面板和玻璃基板，多个所述微型显示面板紧密拼接且设置在所述玻璃基板上；\n\n[0006]其中，所述微型显示面板包括柔性基板、固晶层、密封胶层以及微型发光二极管芯片；所述柔性基板具有相对设置的第一面和第二面，所述第一面具有一有效显示区，所述固晶层黏贴在所述柔性基板的第一面且与所述有效显示区对应，所述密封胶层设置在所述固晶层远离所述柔性基板的一面，所述密封胶层与所述固晶层对应，所述微型发光二极管芯片设置在所述密封胶层远离所述固晶层的一面，所述微型发光二极管芯片与所述有效显示区对应。\n\n[0007]在一些实施中，所述柔性基板为矩形，所述有效显示区也有矩形，所述有效显示区的其中一个边角与所述柔性基板的一个边角对齐，所述柔性基板上有设有直角缺口，所述直角缺口位于所述柔性基板和所述有效显示区对齐的边角的对角位置。\n\n[0008]在一些实施中，所述微型显示面板还包括源极走线和漏极走线，所述源极走线和漏极走线位于所述有效显示区边缘的所述柔性基板上。\n\n[0009]在一些实施中，所述固晶层与柔性基板之间的平整度小于10μm。\n\n[0010]本申请实施例还提供一种拼装显示面板的制程方法，包括：\n\n[0011]提供一柔性基板基板，所述柔性基板具有相对设置的第一面和第二面，所述第一面具有一有效显示区；\n\n[0012]在所述柔性基板的第一面黏贴固晶层；\n\n[0013]在所述固晶层远离所述柔性基板的一面设置密封胶层；\n\n[0014]在所述密封胶层远离所述固晶层的一面设置有微型发光二极管芯片，所述微型发光二极管芯片与所述有效显示区对应以形成微型显示面板；\n\n[0015]将所述有效显示区边缘的所述固晶层和密封胶层通过激光剥离；\n\n[0016]将多个所述微型显示面板紧密拼接，并设置在玻璃基板上。\n\n[0017]在一些实施中，所述将所述有效显示区边缘的所述固晶层和密封胶层通过激光玻璃之后，包括：\n\n[0018]将所述有效显示区的其中一个边角与所述柔性基板的一个边角对齐，所述柔性基板上有切割一个直角缺口，所述直角缺口位于所述柔性基板和所述有效显示区对齐的边角的对角位置。\n\n[0019]在一些实施中，所述柔性基板上有切割一个直角缺口，包括：\n\n[0020]通过激光切割的方式在柔性基板上切割出直角缺口。\n\n[0021]在一些实施中，所述将所述有效显示区边缘的所述固晶层和密封胶层通过激光剥离之后：\n\n[0022]将源极走线和漏极走线设置于所述有效显示区边缘的所述柔性基板上。\n\n[0023]在一些实施中，所述固晶层与柔性基板之间的平整度小于10μm。\n\n[0024]在一些实施中，所述在所述密封胶层远离所述固晶层的一面设置有微型发光二极管芯片，包括：\n\n[0025]通过固晶工艺的方式将微型发光二极管芯片设置在所述密封胶层上。\n\n[0026]本申请实施例中提供拼装显示面板和拼装显示面板的制程方法，本申请实施例的拼装显示面板，包括多个微型显示面板和玻璃基板，多个所述微型显示面板紧密拼接且设置在所述玻璃基板上；其中，所述微型显示面板包括柔性基板、固晶层、密封胶层以及微型发光二极管芯片；所述柔性基板具有相对设置的第一面和第二面，所述第一面具有一有效显示区，所述固晶层黏贴在所述柔性基板的第一面且与所述有效显示区对应，所述密封胶层设置在所述固晶层远离所述柔性基板的一面，所述密封胶层与所述固晶层对应，所述微型发光二极管芯片设置在所述密封胶层远离所述固晶层的一面，所述微型发光二极管芯片与所述有效显示区对应。本申请实施例中拼装显示面板可以减小拼装显示面板的拼装缝隙。\n\n附图说明\n\n[0027]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。\n\n[0028]图1为本申请实施例中拼装显示面板的结构示意图。\n\n[0029]图2为本申请实施例中微型显示面板的结构示意图。\n\n[0030]图3为本申请实施例中拼装显示面板的制程方法流程示意图。\n\n[0031]图4为本申请实施例中微型显示面板的制程方法场景示意图。\n\n[0032]图5为本申请实施例中拼装显示面板的制程方法场景示意图。\n\n具体实施方式\n\n[0033]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0034]本申请实施例中提供一种彩膜基板和显示面板。以下对本申请实施例的彩膜基板做详细介绍。\n\n[0035]请参阅图1和图2，图1为本申请实施例中拼装显示面板100的结构示意图。图2为本申请实施例中微型显示面板10的结构示意图。其中，本申请实施例提供一种拼装显示面板100，拼装显示面板100包括多个微型显示面板10和玻璃基板20，多个所述微型显示面板10紧密拼接且设置在所述玻璃基板20上。其中，所述微型显示面板10包括柔性基板11、固晶层12、密封胶层13以及微型发光二极管芯片14；所述柔性基板11具有相对设置的第一面11a和第二面11b，所述第一面11a具有一有效显示区111，所述固晶层12黏贴在所述柔性基板11的第一面11a且与所述有效显示区111对应，所述密封胶层13设置在所述固晶层12远离所述柔性基板11的一面，所述密封胶层13与所述固晶层12对应，所述微型发光二极管芯片14设置在所述密封胶层13远离所述固晶层12的一面，所述微型发光二极管芯片14与所述有效显示区111对应。\n\n[0036]需要说明的是，有效显示区111(Active Area,AA)指的是显示屏中显示文字图形的可操作区域。\n\n[0037]需要说明的是，第一面11a可以为柔性基板11的上表面，第二面11b可以为柔性基板11的下表面。当然，第一面11a也可以为柔性基板11的下表面，第二面11b可以为柔性基板11的上表面。本申请实施例中不做特殊说明的情况下，默认为第一面11a为柔性基板11的上表面，第二面11b为柔性基板11的下表面。\n\n[0038]需要说明的是，柔性基板11的面积大于有效显示区111的面积，密封胶层13、固晶层12以及微型发光二极光与有效显示区111对应，由于柔性基板11的面积大于有效显示区111的面积，因此，微型发光二极管芯片的边缘还具有柔性基板11的延边，当微型显示面板10在拼装时，微型发光二极管芯片紧密接触，在缝隙处可以被柔性基板11的延边包住，这样使得拼装显示面板100的缝隙被遮挡。且微型显示面板10紧密接触都会使得拼装显示面板100的拼装缝隙减小。\n\n[0039]在本申请的描述中，需要理解的是，术语“上”、“下”、“前”、“后”、“左”、“右”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0040]其中，所述柔性基板11为矩形，所述有效显示区111也有矩形，所述有效显示区111的其中一个边角与所述柔性基板11的一个边角对齐，所述柔性基板11上有设有直角缺口112，所述直角缺口112位于所述柔性基板11和所述有效显示区111对齐的边角的对角位置。\n\n[0041]需要说明的是，所述柔性基板11可以为长方形、正方形等，本申请实施例中对柔性基板11的形状不做过多赘述。另外的，所述柔性基板11上有设有直角缺口112，所述直角缺口112位于所述柔性基板11和所述有效显示区111对齐的边角的对角位置。因为设置有该直角缺口112，因此在微型显示面板10拼装的过程，不会使得直角缺口112处的柔性基板11重叠，从而保证拼装显示面板100的平整程度，从而提高显示面板的显示品质。\n\n[0042]另外的，可以通过激光切割的方式切割形成直角缺口112，当然，直角缺口112还可以通过其他切割方式形成。本申请实施例中对于直角缺口112的形成方式不做限定。\n\n[0043]其中，所述微型显示面板10还包括源极走线15和漏极走线16，所述源极走线15和漏极走线16位于所述微型发光二极管芯片边缘的所述柔性基板11上。\n\n[0044]需要说明的是，源极走线15沿所述柔性基板11横向设置，漏极走线16沿所述柔性基板11竖直设置。另外的，将所述源极走线15和漏极走线16位于所述微型发光二极管芯片边缘的所述柔性基板11上。当微型显示面板10在拼装时，源极走线15和漏极走线16可以隐藏在微型显示面板10的背光侧。这样更有益于缩小拼装显示面板100的缝隙。\n\n[0045]其中，所述固晶层12与柔性基板11之间的平整度小于10μm。\n\n[0046]需要说明的是，将所述固晶层12与柔性基板11之间的平整度小于10μm。这样可以保证显示面板的品质。\n\n[0047]本申请实施例的拼装显示面板100，包括多个微型显示面板10和玻璃基板20，多个所述微型显示面板10紧密拼接且设置在所述玻璃基板20上；其中，所述微型显示面板10包括柔性基板11、固晶层12、密封胶层13以及微型发光二极管芯片14；所述柔性基板11具有相对设置的第一面11a和第二面11b，所述第一面11a具有一有效显示区111，所述固晶层12黏贴在所述柔性基板11的第一面11a且与所述有效显示区111对应，所述密封胶层13设置在所述固晶层12远离所述柔性基板11的一面，所述密封胶层13与所述固晶层12对应，所述微型发光二极管芯片14设置在所述密封胶层13远离所述固晶层12的一面，所述微型发光二极管芯片14与所述有效显示区111对应。本申请实施例中拼装显示面板100可以减小拼装显示面板100的拼装缝隙。\n\n[0048]请参阅图3，图3为本申请实施例中微型显示面板的结构示意图。其中，本申请实施例还提供一种拼装显示面板的制程方法，包括：\n\n[0049]201、提供一柔性基板基板，所述柔性基板具有相对设置的第一面和第二面，所述第一面具有一有效显示区。\n\n[0050]需要说明的是，有效显示区(Active Area,AA)指的是显示屏中显示文字图形的可操作区域。另外的，第一面可以为柔性基板的上表面，第二面可以为柔性基板的下表面。当然，第一面也可以为柔性基板的下表面，第二面可以为柔性基板的上表面。本申请实施例中不做特殊说明的情况下，默认为第一面为柔性基板的上表面，第二面为柔性基板的下表面。\n\n[0051]202、在所述柔性基板的第一面黏贴固晶层。\n\n[0052]需要说明的是，固晶层是通过固晶工艺在所述柔性基板上形成，所述固晶工艺主要是将微型发光二极管芯片固定在所述柔性基板上。\n\n[0053]203、在所述固晶层远离所述柔性基板的一面设置所述密封胶层。\n\n[0054]需要说明的是，密封胶层书通过精密封装工艺在所述柔性基板上形成，所述密封胶层主要是将微型发光二极管芯片密封在所述柔性基板上。\n\n[0055]204、在所述密封胶层远离所述固晶层的一面设置有微型发光二极管芯片，所述微型发光二极管芯片与所述有效显示区对应以形成微型显示面板。\n\n[0056]205、将所述有效显示区边缘的所述固晶层和密封胶层通过激光剥离。\n\n[0057]需要说明的是，还可以通过其他方式剥离将所述有效显示区边缘的所述固晶层和密封胶层。本申请实施例中，所述有效显示区边缘的所述固晶层和密封胶层剥离方式不限于此。\n\n[0058]206、将多个所述微型显示面板紧密拼接，并设置在玻璃基板上。\n\n[0059]需要说明的是，微型显示面板可以包括二个、三个、二十个、三十个等。本申请实施例中对微型显示面板的具体数量不做限定。\n\n[0060]另外的，请参阅图4，图4为本申请实施例中拼装显示面板的制程方法场景示意图。具体制程方式已经在上述实施例中描述，在此不做过多赘述。\n\n[0061]其中，所述将所述有效显示区边缘的所述固晶层和密封胶层通过激光玻璃之后，包括：\n\n[0062]将所述有效显示区的其中一个边角与所述柔性基板的一个边角对齐，所述柔性基板上有切割一个直角缺口，所述直角缺口位于所述柔性基板和所述有效显示区对齐的边角的对角位置。\n\n[0063]需要说明的是，所述柔性基板上有设有直角缺口，所述直角缺口位于所述柔性基板和所述有效显示区对齐的边角的对角位置。因为设置有该直角缺口，因此在微型显示面板拼装的过程，不会使得直角缺口处的柔性基板重叠，从而保证拼装显示面板的平整程度，从而提高显示面板的显示品质。\n\n[0064]另外的，本申请实施例中通过激光切割的方式在柔性基板上切割出直角缺口。\n\n[0065]其中，所述将所述有效显示区边缘的所述固晶层和密封胶层通过激光剥离之后：\n\n[0066]将源极走线和漏极走线设置于所述有效显示区边缘的所述柔性基板上。\n\n[0067]需要说明的是，源极走线沿所述柔性基板横向设置，漏极走线沿所述柔性基板竖直设置。另外的，将所述源极走线和漏极走线位于所述微型发光二极管芯片边缘的所述柔性基板上。当微型显示面板在拼装时，源极走线和漏极走线可以隐藏在微型显示面板的背光侧。这样更有益于缩小拼装显示面板的缝隙。\n\n[0068]其中，所述固晶层与柔性基板之间的平整度小于10μm。\n\n[0069]需要说明的是，将所述固晶层与柔性基板之间的平整度小于10μm。这样可以保证显示面板的品质。\n\n[0070]另外的，请参阅图5，图5为本申请实施例中微型显示面板的制程方法场景示意图。具体制程方式已经在上述实施例中描述，在此不做过多赘述。\n\n[0071]以上对本申请实施例提供的一种拼装显示面板和拼装显示面板的制程方法进行了详细介绍。本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10715, 23769, '技术领域\n\n[0001]本发明涉及显示领域，尤其涉及一种绑定材料、显示面板及Micro-LED的绑定方法。\n\n背景技术\n\n[0002]Micro-LED显示面板，由于具有反应快、高色域、低能耗等优势，已成为未来显示技术的热点之一。\n\n[0003]Micro-LED芯片在制作完成后需要逐一转移到显示基板上，并与显示基板上的驱动电路进行绑定，现有技术是通过将锡膏加热熔融，再降温冷却固化来实现Micro-LED芯片与驱动电路的绑定；然而锡的固态和熔融态是可逆的，在高温环境下或大功率LED器件中，绑定的锡易变成熔融状态，导致Micro-LED芯片与驱动电路的接触变差，或Micro-LED芯片与驱动电极触点位置发生偏移。\n\n[0004]因此，现有Micro-LED芯片绑定技术存在问题，需要改进。\n\n发明内容\n\n[0005]本发明提供一种绑定材料、Micro-LED显示面板及绑定方法，以改进现有Micro-LED芯片绑定技术存在的问题。\n\n[0006]为解决以上问题，本发明提供的技术方案如下：\n\n[0007]本发明提供一种绑定材料，所述绑定材料用于绑定Micro-LED芯片和显示基板，所述绑定材料为导电热固化材料。\n\n[0008]在本发明提供的绑定材料中，所述导电热固化材料包括导电材料和热固化材料，所述导电热固化材料为所述导电材料分散至所述热固化材料中得到。\n\n[0009]在本发明提供的绑定材料中，所述热固化材料为酚醛树脂、环氧树脂、聚氨酯、不饱和聚酯树脂、硅醚树脂、以及有机硅树脂中的一种或多种。。\n\n[0010]在本发明提供的绑定材料中，所述导电材料为纳米导电材料。\n\n[0011]在本发明提供的绑定材料中，所述纳米导电材料包括碳纳米材料、银纳米材料、石墨烯纳米材料。\n\n[0012]同时，本发明提供一种显示面板，其包括：\n\n[0013]显示基板，所述显示基板上设置有驱动电路和触点，所述触点与所述驱动电路电连接；\n\n[0014]Micro-LED芯片，所述Micro-LED芯片上设置有接触电极；\n\n[0015]绑定材料，用于连接所述触点与所述接触电极，并将所述Micro-LED芯片绑定在所述显示基板上；\n\n[0016]其中，所述绑定材料为导电热固化材料。\n\n[0017]在本发明提供的显示面板中，所述导电热固化材料包括导电材料和热固化材料，所述导电热固化材料为所述导电材料分散至所述热固化材料中得到。\n\n[0018]在本发明提供的显示面板中，所述热固化材料为酚醛树脂、环氧树脂、聚氨酯、不饱和聚酯树脂、硅醚树脂、以及有机硅树脂中的一种或多种。。\n\n[0019]在本发明提供的显示面板中，所述导电材料为纳米导电材料。\n\n[0020]在本发明提供的显示面板中，所述纳米导电材料包括碳纳米材料、银纳米材料、石墨烯纳米材料。\n\n[0021]同时，本发明还提供一种Micro-LED芯片的绑定方法，其包括：\n\n[0022]提供显示基板、Micro-LED芯片、以及未经固化的导电热固化材料，所述显示基板上设置有驱动电路和触点，所述触点与所述驱动电路电连接，所述Micro-LED芯片上设置有接触电极；\n\n[0023]采用所述导电热固化材料为绑定材料，连接所述触点和所述接触电极，从而将所述Micro-LED芯片绑定在所述显示基板上。\n\n[0024]在本发明提供的绑定方法中，所述提供导电热固化材料的具体步骤包括：\n\n[0025]提供导电材料和热固化材料；\n\n[0026]将所述导电材料分散至所述热固材料中。\n\n[0027]在本发明提供的绑定方法中，所述将所述导电材料分散至所述热固材料中的具体步骤包括：\n\n[0028]采用超声分散法，将所述导电材料分散至所述热固材料中。\n\n[0029]在本发明提供的绑定方法中，所述采用所述导电热固化材料，连接所述触点和所述接触电极，从而将所述Micro-LED芯片绑定在所述显示基板上的具体步骤包括：\n\n[0030]取定量的所述导电热固化材料于所述触点上；\n\n[0031]将所述Micro-LED芯片转移至所述显示基板，并将所述接触电极与所述触点对位，所述导电热固化材料同时连接所述接触电极和所述触点；\n\n[0032]加热固化所述导电热固化材料。\n\n[0033]在本发明提供的绑定方法中，所述加热固化的温度为50℃～150℃。\n\n[0034]本发明的有益效果为：本发明提供一种绑定材料、显示面板及Micro-LED芯片的绑定方法，其显示面板包括：显示基板，显示基板上设置有驱动电路和触点，触点与驱动电路电连接；Micro-LED芯片，Micro-LED芯片上设置有接触电极；绑定材料，用于连接触点与接触电极，并将Micro-LED芯片绑定在显示基板上；其中，绑定材料为导电热固化材料。通过导电热固化材料来实现Micro-LED芯片在显示基板上的绑定，利用导电热固化材料的导电性，实现了Micro-LED芯片和驱动电路的电连接，利用导电热固化材料固化的不可逆性，避免了在高温环境下或大功率LED器件中，由于绑定材料的熔融，而导致Micro-LED芯片与驱动电路的接触变差，或Micro-LED芯片与驱动电极触点位置发生偏移的问题，从而改善了显示面板的性能。\n\n附图说明\n\n[0035]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0036]图1为本发明实施例提供的显示面板的结构示意简图。\n\n[0037]图2为本发明实施例提供的显示面板的制备流程图。\n\n具体实施方式\n\n[0038]下面将结合本发明的具体实施方案，对本发明实施方案和/或实施例中的技术方案进行清楚、完整的描述，显而易见的，下面所描述的实施方案和/或实施例仅仅是本发明一部分实施方案和/或实施例，而不是全部的实施方案和/或实施例。基于本发明中的实施方案和/或实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施方案和/或实施例，都属于本发明保护范围。\n\n[0039]本发明所提到的方向用语，例如[上]、[下]、[左]、[右]、[前]、[后]、[内]、[外]、[侧]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明和理解本发明，而非用以限制本发明。术语“第一”、“第二”等仅用于描述目的，而不能理解为指示或是暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”等的特征可以明示或者隐含地包括一个或者更多个该特征。\n\n[0040]针对Micro-LED芯片绑定技术存在的问题，本发明提供一种绑定材料、显示面板及Micro-LED芯片的绑定方法可以缓解这个问题。\n\n[0041]在一种实施例中，本发明提供的绑定材料用于绑定Micro-LED芯片和显示基板，所述绑定材料为导电热固化材料。\n\n[0042]本发明实施例提供一种导电热固化材料作为绑定材料，用以绑定Micro-LED芯片和显示基板；通过导电热固化材料来实现Micro-LED芯片在显示基板上的绑定，利用导电热固化材料的导电性，实现了Micro-LED芯片和显示基板上的驱动电路的电连接，利用导电热固化材料固化的不可逆性，避免了在高温环境下或大功率LED器件中，由于绑定材料的熔融，而导致Micro-LED芯片与驱动电路的接触变差，或Micro-LED芯片与驱动电极触点位置发生偏移的问题，从而改善了显示面板的性能。\n\n[0043]在一种实施例中，导电热固化材料包括导电材料和热固化材料，导电热固化材料为导电材料分散至热固化材料中得到。导电材料分散至热固化材料可以采用超声分散的方法实现。\n\n[0044]将导电材料加入到热固化材料中，利用超声震荡原理，当超声振动传递到液态的热固化材料中时，由于声强很大，会在热固化材料中激发很强的空化效应，从而在热固化材料中产生大量的空化气泡。随着这些空化气泡产生和爆破，将产生微射流，进而将热固化材料中重大的导电材料固体颗粒击碎，使其破碎成为细小的粒子，从而均匀的分散在热固化材料中，形成本发明实施例所述的导电热固化材料。\n\n[0045]超声分散的时间和频率，随待分散的导电材料的聚集程度的不同，以及分散的热固化材料的不同会有所不同；导电材料的聚集程度越大，所需要的超声分散的时间越长、频率越大；热固化材料对导电材料的溶解度越差，所需的超声分散的时间越长、频率越大；具体的超声分散参数可以根据实际的热固化材料、导电材料确定，在此不做限定。\n\n[0046]在其他的实施方式中，导电材料在热固化材料中的分散还可以采用高速搅拌的方式。利用高速搅拌机形成的湍流区，使导电材料粒子在这个区域内受到较强的剪切和冲击作用，从而使其很快的分散到热固化材料中去，在湍流区外，形成上下两个流束，使热固化材料得到充分的循环和翻动，进而使导电材料能够充分、均匀的分散到热固化材料中去。\n\n[0047]在一种实施例中，热固化材料为酚醛树脂、环氧树脂、聚氨酯、不饱和聚酯树脂、硅醚树脂、以及有机硅树脂中的一种或多种。热固化材料第一次加热时可以软化流动，加热到一定温度，产生化学反应一交联反应而固化变硬，这种变化是不可逆的，此后，再次加热时，已不能再变软流动了。热固性的树脂固化前是线型或带支链的，固化后分子链之间形成化学键，成为三维的网状结构，质地坚硬，加热不再软化，不仅不能再熔触，在溶剂中也不能溶解，即一旦固化后便具备了不溶不融的特性。\n\n[0048]从而避免了在高温环境下或大功率LED器件中，由于绑定材料的熔融，而导致Micro-LED芯片与驱动电路的接触变差，或Micro-LED芯片与驱动电极触点位置发生偏移的问题，从而改善了显示面板的性能。\n\n[0049]在一种实施例中，导电材料为纳米导电材料。\n\n[0050]所谓纳米材料是指其结构单元的尺寸介于1nm-100nm范围之间的材料。由于纳米材料的尺寸已经接近电子的相干长度，它的性质因为强相干所带来的自组织使得性质发生很大的变化，具有表面效应、小尺寸效应和宏观量子隧道效应，它的光学、热学、电学、磁学、力学以及化学方面的性质与该物质在整体宏观状态时相比将会有显著的不同。\n\n[0051]一方面，纳米导电材料纳米级别的小尺寸，有助于其在热固化材料中的分散，使其能够更加充分的分散至热固化材料中，以形成更加均匀导电热固化材料；另一方面，纳米导电材料的电学性能比该物质在整体宏观状态时更加优异，能够更好的实现Micro-LED芯片与显示基板上的驱动电路之间的电性连接。\n\n[0052]在一种实施例中，纳米导电材料包括碳纳米材料、银纳米材料、石墨烯纳米材料或其他可用于导电的纳米材料。\n\n[0053]在一种实施例中，本发明提供一种显示面板，如图1所示，该显示面板10包括：\n\n[0054]显示基板100，显示基板100包括基板101，基板101上设置有驱动电路102和触点103，触点103与所述驱动电路102电连接；\n\n[0055]Micro-LED芯片200，Micro-LED芯片200上设置有接触电极201；\n\n[0056]绑定材料300，用于连接触点103与接触电极201，并将Micro-LED芯片200绑定在显示基板100上；\n\n[0057]其中，绑定材料300为导电热固化材料。\n\n[0058]本发明实施例提供一种显示面板，该显示面板通过导电热固化材料来实现Micro-LED芯片在显示基板上的绑定，利用导电热固化材料的导电性，实现了Micro-LED芯片和驱动电路的电连接，利用导电热固化材料固化的不可逆性，避免了在高温环境下或大功率LED器件中，由于绑定材料的熔融，而导致Micro-LED芯片与驱动电路的接触变差，或Micro-LED芯片与驱动电极触点位置发生偏移的问题，从而改善了显示面板的性能。\n\n[0059]在一种实施例中，导电热固化材料包括导电材料和热固化材料，导电热固化材料为导电材料分散至热固化材料中得到。导电材料分散至热固化材料可以采用超声分散的方法实现，也可以采用高速搅拌的方式实现。\n\n[0060]在一种实施例中，热固化材料为酚醛树脂、环氧树脂、聚氨酯、不饱和聚酯树脂、硅醚树脂、以及有机硅树脂中的一种或多种。\n\n[0061]在一种实施例中，导电材料为纳米导电材料。\n\n[0062]在一种实施例中，纳米导电材料包括碳纳米材料、银纳米材料、石墨烯纳米材料。\n\n[0063]在一种实施例中，如图2所示，本发明提供一种Micro-LED芯片的绑定方法，包括：\n\n[0064]S1、提供显示基板、Micro-LED芯片、以及未经固化的导电热固化材料，所述显示基板上设置有驱动电路和触点，触点与驱动电路电连接，Micro-LED芯片上设置有接触电极；\n\n[0065]S2、采用导电热固化材料为绑定材料，连接触点和接触电极，从而将Micro-LED芯片绑定在显示基板上。\n\n[0066]本实施例提供一种Micro-LED芯片的绑定方法，通过采用导电热固化材料为绑定材料，来实现Micro-LED芯片在显示基板上的绑定；利用导电热固化材料的导电性，实现了Micro-LED芯片和驱动电路的电连接；利用导电热固化材料固化的不可逆性，避免了在高温环境下或大功率LED器件中，由于绑定材料的熔融，而导致Micro-LED芯片与驱动电路的接触变差，或Micro-LED芯片与驱动电极触点位置发生偏移的问题，从而改善了显示面板的性能。\n\n[0067]在一种实施例中，步骤S1中提供导电热固化材料的具体步骤包括：\n\n[0068]S11、提供导电材料和热固化材料。\n\n[0069]在一种实施方案中，所述导电材料为纳米导电材料，纳米导电材料包括碳纳米材料、银纳米材料、石墨烯纳米材料或其他可用于导电的纳米材料；由于纳米材料的结构单元的尺寸介于1nm-100nm范围之间，该纳米级别的小尺寸，有助于其在热固化材料中的分散，使其能够更加充分的分散至热固化材料中，以形成更加均匀导电热固化材料。\n\n[0070]同时，纳米导电材料具有相比于同样物质在整体宏观状态时更加优异的电学性能，能够更好的实现Micro-LED芯片与显示基板上的驱动电路之间的电性连接。\n\n[0071]在一种实施方案中，热固化材料为酚醛树脂、环氧树脂、聚氨酯、不饱和聚酯树脂、硅醚树脂、以及有机硅树脂中的一种或多种。热固化材料的特点是在一定温度下，经一定时间加热、加压或加入硬化剂后，发生化学反应而硬化。硬化后的热固化材料的化学结构发生变化、质地坚硬、不溶于溶剂、加热也不再软化，即固化后具有不溶不融的特性。\n\n[0072]热固化材料的上述特性使得其在高温环境下或大功率LED器件中，不会由于熔融，而使得其绑定的部件接触变差或是发生偏移的问题，从而能够改善显示器件的性能。\n\n[0073]S12、将导电材料分散至热固材料中。\n\n[0074]在一种实施例中，S12将导电材料分散至热固材料中的具体步骤包括：\n\n[0075]采用超声分散法，将导电材料分散至热固材料中。\n\n[0076]将导电材料加入到热固化材料中，利用超声震荡原理，当超声振动传递到液态的热固化材料中时，由于声强很大，会在热固化材料中激发很强的空化效应，从而在热固化材料中产生大量的空化气泡。随着这些空化气泡产生和爆破，将产生微射流，进而将热固化材料中重大的导电材料固体颗粒击碎，使其破碎成为细小的粒子，从而均匀的分散在热固化材料中，形成本发明实施例所述的导电热固化材料。\n\n[0077]超声分散的时间和频率，随待分散的导电材料的聚集程度的不同，以及分散的热固化材料的不同会有所不同；导电材料的聚集程度越大，所需要的超声分散的时间越长、频率越大；热固化材料对导电材料的溶解度越差，所需的超声分散的时间越长、频率越大；具体的超声分散参数可以根据实际的热固化材料、导电材料确定，在此不做限定。\n\n[0078]在另一种实施例中，S12将导电材料分散至热固材料中的具体步骤包括：\n\n[0079]采用高速搅拌的方式，将导电材料分散至热固材料中。\n\n[0080]将导电材料加入到热固化材料中，利用高速搅拌机形成的湍流区，使导电材料粒子在这个区域内受到较强的剪切和冲击作用，从而使其很快的分散到热固化材料中去，在湍流区外，形成上下两个流束，使热固化材料得到充分的循环和翻动，进而使导电材料能够充分、均匀的分散到热固化材料中去。\n\n[0081]在一种实施例中，S2采用导电热固化材料，连接触点和接触电极，从而将Micro-LED芯片绑定在显示基板上的具体步骤包括：\n\n[0082]S211、取定量的导电热固化材料于显示基板的触点上。\n\n[0083]根据触点的位置及面积大小，取一定量本发明提供的导电热固化材料涂覆于显示基板的触点上，所述导电热固化材料需要完全覆盖所述触点，以保证在后续绑定过程中，所述触点与其相对应的接触电极能够通过导电热固化材料进行绑定，并形成良好的电接触；同时需要确保导电热固化材料涂覆不可过多，以避免所述导电热固化材料由于流动扩散而发生短接的现象，从而造成后续显示过程中无法独立控制显示的问题。\n\n[0084]S212、将Micro-LED芯片转移至显示基板，并将接触电极与所述触点对位，导电热固化材料同时连接接触电极和所述触点。\n\n[0085]采用巨量转移或其他转移方式，将Micro-LED芯片转移至显示基板，并将Micro-LED芯片上的接触电极，和与之相对应的触点进行精确对位，以保证后续Micro-LED芯片与显示基板的绑定位置准确；将接触电极和与其相对应的触点上的导电热固化材料接触，对所述Micro-LED芯片施加一定的力度，使接触电极与所述导电热固化材料充分接触，以保证后续绑定过程中，导电热固化材料对接触电极的绑定效果。\n\n[0086]S213、加热固化导电热固化材料；对实现了对位连接的显示面板进行加热，使得未经固化的导电热固化材料固化，进而将Micro-LED芯片绑定在显示基板上。所述加热固化的温度为50℃～150℃。\n\n[0087]热固化材料第一次加热时可以软化流动，加热到一定温度，产生化学反应一交联反应而固化变硬，这种变化是不可逆的，此后，再次加热时，已不能再变软流动了。热固性的树脂固化前是线型或带支链的，固化后分子链之间形成化学键，成为三维的网状结构，质地坚硬，加热不再软化，不仅不能再熔触，在溶剂中也不能溶解，即一旦固化后便具备了不溶不融的特性。\n\n[0088]从而避免了在高温环境下或大功率LED器件中，由于绑定材料的熔融，而导致Micro-LED芯片与驱动电路的接触变差，或Micro-LED芯片与驱动电极触点位置发生偏移的问题，从而改善了显示面板的性能。\n\n[0089]在另一种实施例中，S2采用导电热固化材料，连接触点和接触电极，从而将Micro-LED芯片绑定在显示基板上的具体步骤包括：\n\n[0090]S221、取定量的导电热固化材料于Micro-LED芯片的接触电极上。\n\n[0091]根据接触电极的面积大小，取一定量本发明提供的导电热固化材料涂覆于Micro-LED芯片的接触电极上，所述导电热固化材料需要完全覆盖所述接触电极，以保证在后续绑定过程中，所述接触电极与其相对应的触点能够通过导电热固化材料进行绑定，并形成良好的电接触；同时需要确保导电热固化材料涂覆不可过多，以避免Micro-LED芯片在转移的过程中，导电热固化材料由于重力过大而脱落。\n\n[0092]S222、将Micro-LED芯片转移至显示基板，并将接触电极与所述触点对位，导电热固化材料同时连接接触电极和所述触点。\n\n[0093]采用巨量转移或其他转移方式，将Micro-LED芯片转移至显示基板，并将Micro-LED芯片上的接触电极，和与之相对应的触点进行精确对位，以保证后续Micro-LED芯片与显示基板的绑定位置准确；将触点和与其相对应的接触电极上的导电热固化材料接触，对所述Micro-LED芯片施加一定的力度，使触点与所述导电热固化材料充分接触，以保证后续绑定过程中，导电热固化材料对触点的绑定效果。\n\n[0094]S223、加热固化导电热固化材料；对实现了对位连接的显示面板进行加热，使得未经固化的导电热固化材料固化，进而将Micro-LED芯片绑定在显示基板上。所述加热固化的温度为50℃～150℃。\n\n[0095]热固化材料第一次加热时可以软化流动，加热到一定温度，产生化学反应一交联反应而固化变硬，这种变化是不可逆的，此后，再次加热时，已不能再变软流动了。热固性的树脂固化前是线型或带支链的，固化后分子链之间形成化学键，成为三维的网状结构，质地坚硬，加热不再软化，不仅不能再熔触，在溶剂中也不能溶解，即一旦固化后便具备了不溶不融的特性。\n\n[0096]从而避免了在高温环境下或大功率LED器件中，由于绑定材料的熔融，而导致Micro-LED芯片与驱动电路的接触变差，或Micro-LED芯片与驱动电极触点位置发生偏移的问题，从而改善了显示面板的性能。\n\n[0097]在又一种实施例中，S2采用导电热固化材料，连接触点和接触电极，从而将Micro-LED芯片绑定在显示基板上的具体步骤包括：\n\n[0098]S231、分别取定量的导电热固化材料于显示基板的触点、Micro-LED芯片的接触电极上。\n\n[0099]根据触点的位置及面积大小，取一定量本发明提供的导电热固化材料涂覆于显示基板的触点上，所述导电热固化材料需要完全覆盖所述触点，以保证在后续绑定过程中，所述触点与其相对应的接触电极能够通过导电热固化材料进行绑定，并形成良好的电接触；同时需要确保导电热固化材料涂覆不可过多，以避免所述导电热固化材料由于流动扩散而发生短接的现象，从而造成后续显示过程中无法独立控制显示的问题。\n\n[0100]根据接触电极的面积大小，取一定量本发明提供的导电热固化材料涂覆于Micro-LED芯片的接触电极上，所述导电热固化材料需要完全覆盖所述接触电极，以保证在后续绑定过程中，所述接触电极与其相对应的触点能够通过导电热固化材料进行绑定，并形成良好的电接触；同时需要确保导电热固化材料涂覆不可过多，以避免Micro-LED芯片在转移的过程中，导电热固化材料由于重力过大而脱落。\n\n[0101]S232、将Micro-LED芯片转移至显示基板，并将接触电极与所述触点对位，导电热固化材料同时连接接触电极和所述触点。\n\n[0102]采用巨量转移或其他转移方式，将Micro-LED芯片转移至显示基板，并将Micro-LED芯片上的接触电极，和与之相对应的触点进行精确对位，以保证后续Micro-LED芯片与显示基板的绑定位置准确；将触点上的导电热固化材料，和与其相对应的接触电极上的导电热固化材料接触，对所述Micro-LED芯片施加一定的力度，使触点上的导电热固化材料，和与其相对应的接触电极上的导电热固化材料充分接触，以保证后续绑定效果。\n\n[0103]S233、加热固化导电热固化材料；对实现了对位连接的显示面板进行加热，使得未经固化的导电热固化材料固化，进而将Micro-LED芯片绑定在显示基板上。所述加热固化的温度为50℃～150℃。\n\n[0104]热固化材料第一次加热时可以软化流动，加热到一定温度，产生化学反应一交联反应而固化变硬，这种变化是不可逆的，此后，再次加热时，已不能再变软流动了。热固性的树脂固化前是线型或带支链的，固化后分子链之间形成化学键，成为三维的网状结构，质地坚硬，加热不再软化，不仅不能再熔触，在溶剂中也不能溶解，即一旦固化后便具备了不溶不融的特性。\n\n[0105]从而避免了在高温环境下或大功率LED器件中，由于绑定材料的熔融，而导致芯片与驱动电路的接触变差，或Micro-LED芯片与驱动电极触点位置发生偏移的问题，从而改善了显示面板的性能。\n\n[0106]通过采用导电热固化材料取代焊锡，用来进行绑定的方法，除了使用于上述实施例所述的Micro-LED显示面板，其适用范围还包括mini-LED、LED行业等行业，在此不做限定，所有符合本发明实施提供的导电热固化材料，和采用导电热固化材料进行绑定的方法都是本发明的保护内容。\n\n[0107]根据上述实施例可知：\n\n[0108]本发明实施例提供一种绑定材料、显示面板及Micro-LED芯片的绑定方法，其显示面板包括：显示基板，显示基板上设置有驱动电路和触点，触点与驱动电路电连接；Micro-LED芯片，Micro-LED芯片上设置有接触电极；绑定材料，用于连接触点与接触电极，并将Micro-LED芯片绑定在显示基板上；其中，绑定材料为导电热固化材料。通过导电热固化材料来实现Micro-LED芯片在显示基板上的绑定，利用导电热固化材料的导电性，实现了Micro-LED芯片和驱动电路的电连接，利用导电热固化材料固化的不可逆性，避免了在高温环境下或大功率LED器件中，由于绑定材料的熔融，而导致Micro-LED芯片与驱动电路的接触变差，或Micro-LED芯片与驱动电极触点位置发生偏移的问题，从而改善了显示面板的性能。\n\n[0109]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及显示领域，尤其涉及一种绑定材料、显示面板及Micro-LED的绑定方法。\n\n背景技术\n\n[0002]Micro-LED显示面板，由于具有反应快、高色域、低能耗等优势，已成为未来显示技术的热点之一。\n\n[0003]Micro-LED芯片在制作完成后需要逐一转移到显示基板上，并与显示基板上的驱动电路进行绑定，现有技术是通过将锡膏加热熔融，再降温冷却固化来实现Micro-LED芯片与驱动电路的绑定；然而锡的固态和熔融态是可逆的，在高温环境下或大功率LED器件中，绑定的锡易变成熔融状态，导致Micro-LED芯片与驱动电路的接触变差，或Micro-LED芯片与驱动电极触点位置发生偏移。\n\n[0004]因此，现有Micro-LED芯片绑定技术存在问题，需要改进。\n\n发明内容\n\n[0005]本发明提供一种绑定材料、Micro-LED显示面板及绑定方法，以改进现有Micro-LED芯片绑定技术存在的问题。\n\n[0006]为解决以上问题，本发明提供的技术方案如下：\n\n[0007]本发明提供一种绑定材料，所述绑定材料用于绑定Micro-LED芯片和显示基板，所述绑定材料为导电热固化材料。\n\n[0008]在本发明提供的绑定材料中，所述导电热固化材料包括导电材料和热固化材料，所述导电热固化材料为所述导电材料分散至所述热固化材料中得到。\n\n[0009]在本发明提供的绑定材料中，所述热固化材料为酚醛树脂、环氧树脂、聚氨酯、不饱和聚酯树脂、硅醚树脂、以及有机硅树脂中的一种或多种。。\n\n[0010]在本发明提供的绑定材料中，所述导电材料为纳米导电材料。\n\n[0011]在本发明提供的绑定材料中，所述纳米导电材料包括碳纳米材料、银纳米材料、石墨烯纳米材料。\n\n[0012]同时，本发明提供一种显示面板，其包括：\n\n[0013]显示基板，所述显示基板上设置有驱动电路和触点，所述触点与所述驱动电路电连接；\n\n[0014]Micro-LED芯片，所述Micro-LED芯片上设置有接触电极；\n\n[0015]绑定材料，用于连接所述触点与所述接触电极，并将所述Micro-LED芯片绑定在所述显示基板上；\n\n[0016]其中，所述绑定材料为导电热固化材料。\n\n[0017]在本发明提供的显示面板中，所述导电热固化材料包括导电材料和热固化材料，所述导电热固化材料为所述导电材料分散至所述热固化材料中得到。\n\n[0018]在本发明提供的显示面板中，所述热固化材料为酚醛树脂、环氧树脂、聚氨酯、不饱和聚酯树脂、硅醚树脂、以及有机硅树脂中的一种或多种。。\n\n[0019]在本发明提供的显示面板中，所述导电材料为纳米导电材料。\n\n[0020]在本发明提供的显示面板中，所述纳米导电材料包括碳纳米材料、银纳米材料、石墨烯纳米材料。\n\n[0021]同时，本发明还提供一种Micro-LED芯片的绑定方法，其包括：\n\n[0022]提供显示基板、Micro-LED芯片、以及未经固化的导电热固化材料，所述显示基板上设置有驱动电路和触点，所述触点与所述驱动电路电连接，所述Micro-LED芯片上设置有接触电极；\n\n[0023]采用所述导电热固化材料为绑定材料，连接所述触点和所述接触电极，从而将所述Micro-LED芯片绑定在所述显示基板上。\n\n[0024]在本发明提供的绑定方法中，所述提供导电热固化材料的具体步骤包括：\n\n[0025]提供导电材料和热固化材料；\n\n[0026]将所述导电材料分散至所述热固材料中。\n\n[0027]在本发明提供的绑定方法中，所述将所述导电材料分散至所述热固材料中的具体步骤包括：\n\n[0028]采用超声分散法，将所述导电材料分散至所述热固材料中。\n\n[0029]在本发明提供的绑定方法中，所述采用所述导电热固化材料，连接所述触点和所述接触电极，从而将所述Micro-LED芯片绑定在所述显示基板上的具体步骤包括：\n\n[0030]取定量的所述导电热固化材料于所述触点上；\n\n[0031]将所述Micro-LED芯片转移至所述显示基板，并将所述接触电极与所述触点对位，所述导电热固化材料同时连接所述接触电极和所述触点；\n\n[0032]加热固化所述导电热固化材料。\n\n[0033]在本发明提供的绑定方法中，所述加热固化的温度为50℃～150℃。\n\n[0034]本发明的有益效果为：本发明提供一种绑定材料、显示面板及Micro-LED芯片的绑定方法，其显示面板包括：显示基板，显示基板上设置有驱动电路和触点，触点与驱动电路电连接；Micro-LED芯片，Micro-LED芯片上设置有接触电极；绑定材料，用于连接触点与接触电极，并将Micro-LED芯片绑定在显示基板上；其中，绑定材料为导电热固化材料。通过导电热固化材料来实现Micro-LED芯片在显示基板上的绑定，利用导电热固化材料的导电性，实现了Micro-LED芯片和驱动电路的电连接，利用导电热固化材料固化的不可逆性，避免了在高温环境下或大功率LED器件中，由于绑定材料的熔融，而导致Micro-LED芯片与驱动电路的接触变差，或Micro-LED芯片与驱动电极触点位置发生偏移的问题，从而改善了显示面板的性能。\n\n附图说明\n\n[0035]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0036]图1为本发明实施例提供的显示面板的结构示意简图。\n\n[0037]图2为本发明实施例提供的显示面板的制备流程图。\n\n具体实施方式\n\n[0038]下面将结合本发明的具体实施方案，对本发明实施方案和/或实施例中的技术方案进行清楚、完整的描述，显而易见的，下面所描述的实施方案和/或实施例仅仅是本发明一部分实施方案和/或实施例，而不是全部的实施方案和/或实施例。基于本发明中的实施方案和/或实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施方案和/或实施例，都属于本发明保护范围。\n\n[0039]本发明所提到的方向用语，例如[上]、[下]、[左]、[右]、[前]、[后]、[内]、[外]、[侧]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明和理解本发明，而非用以限制本发明。术语“第一”、“第二”等仅用于描述目的，而不能理解为指示或是暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”等的特征可以明示或者隐含地包括一个或者更多个该特征。\n\n[0040]针对Micro-LED芯片绑定技术存在的问题，本发明提供一种绑定材料、显示面板及Micro-LED芯片的绑定方法可以缓解这个问题。\n\n[0041]在一种实施例中，本发明提供的绑定材料用于绑定Micro-LED芯片和显示基板，所述绑定材料为导电热固化材料。\n\n[0042]本发明实施例提供一种导电热固化材料作为绑定材料，用以绑定Micro-LED芯片和显示基板；通过导电热固化材料来实现Micro-LED芯片在显示基板上的绑定，利用导电热固化材料的导电性，实现了Micro-LED芯片和显示基板上的驱动电路的电连接，利用导电热固化材料固化的不可逆性，避免了在高温环境下或大功率LED器件中，由于绑定材料的熔融，而导致Micro-LED芯片与驱动电路的接触变差，或Micro-LED芯片与驱动电极触点位置发生偏移的问题，从而改善了显示面板的性能。\n\n[0043]在一种实施例中，导电热固化材料包括导电材料和热固化材料，导电热固化材料为导电材料分散至热固化材料中得到。导电材料分散至热固化材料可以采用超声分散的方法实现。\n\n[0044]将导电材料加入到热固化材料中，利用超声震荡原理，当超声振动传递到液态的热固化材料中时，由于声强很大，会在热固化材料中激发很强的空化效应，从而在热固化材料中产生大量的空化气泡。随着这些空化气泡产生和爆破，将产生微射流，进而将热固化材料中重大的导电材料固体颗粒击碎，使其破碎成为细小的粒子，从而均匀的分散在热固化材料中，形成本发明实施例所述的导电热固化材料。\n\n[0045]超声分散的时间和频率，随待分散的导电材料的聚集程度的不同，以及分散的热固化材料的不同会有所不同；导电材料的聚集程度越大，所需要的超声分散的时间越长、频率越大；热固化材料对导电材料的溶解度越差，所需的超声分散的时间越长、频率越大；具体的超声分散参数可以根据实际的热固化材料、导电材料确定，在此不做限定。\n\n[0046]在其他的实施方式中，导电材料在热固化材料中的分散还可以采用高速搅拌的方式。利用高速搅拌机形成的湍流区，使导电材料粒子在这个区域内受到较强的剪切和冲击作用，从而使其很快的分散到热固化材料中去，在湍流区外，形成上下两个流束，使热固化材料得到充分的循环和翻动，进而使导电材料能够充分、均匀的分散到热固化材料中去。\n\n[0047]在一种实施例中，热固化材料为酚醛树脂、环氧树脂、聚氨酯、不饱和聚酯树脂、硅醚树脂、以及有机硅树脂中的一种或多种。热固化材料第一次加热时可以软化流动，加热到一定温度，产生化学反应一交联反应而固化变硬，这种变化是不可逆的，此后，再次加热时，已不能再变软流动了。热固性的树脂固化前是线型或带支链的，固化后分子链之间形成化学键，成为三维的网状结构，质地坚硬，加热不再软化，不仅不能再熔触，在溶剂中也不能溶解，即一旦固化后便具备了不溶不融的特性。\n\n[0048]从而避免了在高温环境下或大功率LED器件中，由于绑定材料的熔融，而导致Micro-LED芯片与驱动电路的接触变差，或Micro-LED芯片与驱动电极触点位置发生偏移的问题，从而改善了显示面板的性能。\n\n[0049]在一种实施例中，导电材料为纳米导电材料。\n\n[0050]所谓纳米材料是指其结构单元的尺寸介于1nm-100nm范围之间的材料。由于纳米材料的尺寸已经接近电子的相干长度，它的性质因为强相干所带来的自组织使得性质发生很大的变化，具有表面效应、小尺寸效应和宏观量子隧道效应，它的光学、热学、电学、磁学、力学以及化学方面的性质与该物质在整体宏观状态时相比将会有显著的不同。\n\n[0051]一方面，纳米导电材料纳米级别的小尺寸，有助于其在热固化材料中的分散，使其能够更加充分的分散至热固化材料中，以形成更加均匀导电热固化材料；另一方面，纳米导电材料的电学性能比该物质在整体宏观状态时更加优异，能够更好的实现Micro-LED芯片与显示基板上的驱动电路之间的电性连接。\n\n[0052]在一种实施例中，纳米导电材料包括碳纳米材料、银纳米材料、石墨烯纳米材料或其他可用于导电的纳米材料。\n\n[0053]在一种实施例中，本发明提供一种显示面板，如图1所示，该显示面板10包括：\n\n[0054]显示基板100，显示基板100包括基板101，基板101上设置有驱动电路102和触点103，触点103与所述驱动电路102电连接；\n\n[0055]Micro-LED芯片200，Micro-LED芯片200上设置有接触电极201；\n\n[0056]绑定材料300，用于连接触点103与接触电极201，并将Micro-LED芯片200绑定在显示基板100上；\n\n[0057]其中，绑定材料300为导电热固化材料。\n\n[0058]本发明实施例提供一种显示面板，该显示面板通过导电热固化材料来实现Micro-LED芯片在显示基板上的绑定，利用导电热固化材料的导电性，实现了Micro-LED芯片和驱动电路的电连接，利用导电热固化材料固化的不可逆性，避免了在高温环境下或大功率LED器件中，由于绑定材料的熔融，而导致Micro-LED芯片与驱动电路的接触变差，或Micro-LED芯片与驱动电极触点位置发生偏移的问题，从而改善了显示面板的性能。\n\n[0059]在一种实施例中，导电热固化材料包括导电材料和热固化材料，导电热固化材料为导电材料分散至热固化材料中得到。导电材料分散至热固化材料可以采用超声分散的方法实现，也可以采用高速搅拌的方式实现。\n\n[0060]在一种实施例中，热固化材料为酚醛树脂、环氧树脂、聚氨酯、不饱和聚酯树脂、硅醚树脂、以及有机硅树脂中的一种或多种。\n\n[0061]在一种实施例中，导电材料为纳米导电材料。\n\n[0062]在一种实施例中，纳米导电材料包括碳纳米材料、银纳米材料、石墨烯纳米材料。\n\n[0063]在一种实施例中，如图2所示，本发明提供一种Micro-LED芯片的绑定方法，包括：\n\n[0064]S1、提供显示基板、Micro-LED芯片、以及未经固化的导电热固化材料，所述显示基板上设置有驱动电路和触点，触点与驱动电路电连接，Micro-LED芯片上设置有接触电极；\n\n[0065]S2、采用导电热固化材料为绑定材料，连接触点和接触电极，从而将Micro-LED芯片绑定在显示基板上。\n\n[0066]本实施例提供一种Micro-LED芯片的绑定方法，通过采用导电热固化材料为绑定材料，来实现Micro-LED芯片在显示基板上的绑定；利用导电热固化材料的导电性，实现了Micro-LED芯片和驱动电路的电连接；利用导电热固化材料固化的不可逆性，避免了在高温环境下或大功率LED器件中，由于绑定材料的熔融，而导致Micro-LED芯片与驱动电路的接触变差，或Micro-LED芯片与驱动电极触点位置发生偏移的问题，从而改善了显示面板的性能。\n\n[0067]在一种实施例中，步骤S1中提供导电热固化材料的具体步骤包括：\n\n[0068]S11、提供导电材料和热固化材料。\n\n[0069]在一种实施方案中，所述导电材料为纳米导电材料，纳米导电材料包括碳纳米材料、银纳米材料、石墨烯纳米材料或其他可用于导电的纳米材料；由于纳米材料的结构单元的尺寸介于1nm-100nm范围之间，该纳米级别的小尺寸，有助于其在热固化材料中的分散，使其能够更加充分的分散至热固化材料中，以形成更加均匀导电热固化材料。\n\n[0070]同时，纳米导电材料具有相比于同样物质在整体宏观状态时更加优异的电学性能，能够更好的实现Micro-LED芯片与显示基板上的驱动电路之间的电性连接。\n\n[0071]在一种实施方案中，热固化材料为酚醛树脂、环氧树脂、聚氨酯、不饱和聚酯树脂、硅醚树脂、以及有机硅树脂中的一种或多种。热固化材料的特点是在一定温度下，经一定时间加热、加压或加入硬化剂后，发生化学反应而硬化。硬化后的热固化材料的化学结构发生变化、质地坚硬、不溶于溶剂、加热也不再软化，即固化后具有不溶不融的特性。\n\n[0072]热固化材料的上述特性使得其在高温环境下或大功率LED器件中，不会由于熔融，而使得其绑定的部件接触变差或是发生偏移的问题，从而能够改善显示器件的性能。\n\n[0073]S12、将导电材料分散至热固材料中。\n\n[0074]在一种实施例中，S12将导电材料分散至热固材料中的具体步骤包括：\n\n[0075]采用超声分散法，将导电材料分散至热固材料中。\n\n[0076]将导电材料加入到热固化材料中，利用超声震荡原理，当超声振动传递到液态的热固化材料中时，由于声强很大，会在热固化材料中激发很强的空化效应，从而在热固化材料中产生大量的空化气泡。随着这些空化气泡产生和爆破，将产生微射流，进而将热固化材料中重大的导电材料固体颗粒击碎，使其破碎成为细小的粒子，从而均匀的分散在热固化材料中，形成本发明实施例所述的导电热固化材料。\n\n[0077]超声分散的时间和频率，随待分散的导电材料的聚集程度的不同，以及分散的热固化材料的不同会有所不同；导电材料的聚集程度越大，所需要的超声分散的时间越长、频率越大；热固化材料对导电材料的溶解度越差，所需的超声分散的时间越长、频率越大；具体的超声分散参数可以根据实际的热固化材料、导电材料确定，在此不做限定。\n\n[0078]在另一种实施例中，S12将导电材料分散至热固材料中的具体步骤包括：\n\n[0079]采用高速搅拌的方式，将导电材料分散至热固材料中。\n\n[0080]将导电材料加入到热固化材料中，利用高速搅拌机形成的湍流区，使导电材料粒子在这个区域内受到较强的剪切和冲击作用，从而使其很快的分散到热固化材料中去，在湍流区外，形成上下两个流束，使热固化材料得到充分的循环和翻动，进而使导电材料能够充分、均匀的分散到热固化材料中去。\n\n[0081]在一种实施例中，S2采用导电热固化材料，连接触点和接触电极，从而将Micro-LED芯片绑定在显示基板上的具体步骤包括：\n\n[0082]S211、取定量的导电热固化材料于显示基板的触点上。\n\n[0083]根据触点的位置及面积大小，取一定量本发明提供的导电热固化材料涂覆于显示基板的触点上，所述导电热固化材料需要完全覆盖所述触点，以保证在后续绑定过程中，所述触点与其相对应的接触电极能够通过导电热固化材料进行绑定，并形成良好的电接触；同时需要确保导电热固化材料涂覆不可过多，以避免所述导电热固化材料由于流动扩散而发生短接的现象，从而造成后续显示过程中无法独立控制显示的问题。\n\n[0084]S212、将Micro-LED芯片转移至显示基板，并将接触电极与所述触点对位，导电热固化材料同时连接接触电极和所述触点。\n\n[0085]采用巨量转移或其他转移方式，将Micro-LED芯片转移至显示基板，并将Micro-LED芯片上的接触电极，和与之相对应的触点进行精确对位，以保证后续Micro-LED芯片与显示基板的绑定位置准确；将接触电极和与其相对应的触点上的导电热固化材料接触，对所述Micro-LED芯片施加一定的力度，使接触电极与所述导电热固化材料充分接触，以保证后续绑定过程中，导电热固化材料对接触电极的绑定效果。\n\n[0086]S213、加热固化导电热固化材料；对实现了对位连接的显示面板进行加热，使得未经固化的导电热固化材料固化，进而将Micro-LED芯片绑定在显示基板上。所述加热固化的温度为50℃～150℃。\n\n[0087]热固化材料第一次加热时可以软化流动，加热到一定温度，产生化学反应一交联反应而固化变硬，这种变化是不可逆的，此后，再次加热时，已不能再变软流动了。热固性的树脂固化前是线型或带支链的，固化后分子链之间形成化学键，成为三维的网状结构，质地坚硬，加热不再软化，不仅不能再熔触，在溶剂中也不能溶解，即一旦固化后便具备了不溶不融的特性。\n\n[0088]从而避免了在高温环境下或大功率LED器件中，由于绑定材料的熔融，而导致Micro-LED芯片与驱动电路的接触变差，或Micro-LED芯片与驱动电极触点位置发生偏移的问题，从而改善了显示面板的性能。\n\n[0089]在另一种实施例中，S2采用导电热固化材料，连接触点和接触电极，从而将Micro-LED芯片绑定在显示基板上的具体步骤包括：\n\n[0090]S221、取定量的导电热固化材料于Micro-LED芯片的接触电极上。\n\n[0091]根据接触电极的面积大小，取一定量本发明提供的导电热固化材料涂覆于Micro-LED芯片的接触电极上，所述导电热固化材料需要完全覆盖所述接触电极，以保证在后续绑定过程中，所述接触电极与其相对应的触点能够通过导电热固化材料进行绑定，并形成良好的电接触；同时需要确保导电热固化材料涂覆不可过多，以避免Micro-LED芯片在转移的过程中，导电热固化材料由于重力过大而脱落。\n\n[0092]S222、将Micro-LED芯片转移至显示基板，并将接触电极与所述触点对位，导电热固化材料同时连接接触电极和所述触点。\n\n[0093]采用巨量转移或其他转移方式，将Micro-LED芯片转移至显示基板，并将Micro-LED芯片上的接触电极，和与之相对应的触点进行精确对位，以保证后续Micro-LED芯片与显示基板的绑定位置准确；将触点和与其相对应的接触电极上的导电热固化材料接触，对所述Micro-LED芯片施加一定的力度，使触点与所述导电热固化材料充分接触，以保证后续绑定过程中，导电热固化材料对触点的绑定效果。\n\n[0094]S223、加热固化导电热固化材料；对实现了对位连接的显示面板进行加热，使得未经固化的导电热固化材料固化，进而将Micro-LED芯片绑定在显示基板上。所述加热固化的温度为50℃～150℃。\n\n[0095]热固化材料第一次加热时可以软化流动，加热到一定温度，产生化学反应一交联反应而固化变硬，这种变化是不可逆的，此后，再次加热时，已不能再变软流动了。热固性的树脂固化前是线型或带支链的，固化后分子链之间形成化学键，成为三维的网状结构，质地坚硬，加热不再软化，不仅不能再熔触，在溶剂中也不能溶解，即一旦固化后便具备了不溶不融的特性。\n\n[0096]从而避免了在高温环境下或大功率LED器件中，由于绑定材料的熔融，而导致Micro-LED芯片与驱动电路的接触变差，或Micro-LED芯片与驱动电极触点位置发生偏移的问题，从而改善了显示面板的性能。\n\n[0097]在又一种实施例中，S2采用导电热固化材料，连接触点和接触电极，从而将Micro-LED芯片绑定在显示基板上的具体步骤包括：\n\n[0098]S231、分别取定量的导电热固化材料于显示基板的触点、Micro-LED芯片的接触电极上。\n\n[0099]根据触点的位置及面积大小，取一定量本发明提供的导电热固化材料涂覆于显示基板的触点上，所述导电热固化材料需要完全覆盖所述触点，以保证在后续绑定过程中，所述触点与其相对应的接触电极能够通过导电热固化材料进行绑定，并形成良好的电接触；同时需要确保导电热固化材料涂覆不可过多，以避免所述导电热固化材料由于流动扩散而发生短接的现象，从而造成后续显示过程中无法独立控制显示的问题。\n\n[0100]根据接触电极的面积大小，取一定量本发明提供的导电热固化材料涂覆于Micro-LED芯片的接触电极上，所述导电热固化材料需要完全覆盖所述接触电极，以保证在后续绑定过程中，所述接触电极与其相对应的触点能够通过导电热固化材料进行绑定，并形成良好的电接触；同时需要确保导电热固化材料涂覆不可过多，以避免Micro-LED芯片在转移的过程中，导电热固化材料由于重力过大而脱落。\n\n[0101]S232、将Micro-LED芯片转移至显示基板，并将接触电极与所述触点对位，导电热固化材料同时连接接触电极和所述触点。\n\n[0102]采用巨量转移或其他转移方式，将Micro-LED芯片转移至显示基板，并将Micro-LED芯片上的接触电极，和与之相对应的触点进行精确对位，以保证后续Micro-LED芯片与显示基板的绑定位置准确；将触点上的导电热固化材料，和与其相对应的接触电极上的导电热固化材料接触，对所述Micro-LED芯片施加一定的力度，使触点上的导电热固化材料，和与其相对应的接触电极上的导电热固化材料充分接触，以保证后续绑定效果。\n\n[0103]S233、加热固化导电热固化材料；对实现了对位连接的显示面板进行加热，使得未经固化的导电热固化材料固化，进而将Micro-LED芯片绑定在显示基板上。所述加热固化的温度为50℃～150℃。\n\n[0104]热固化材料第一次加热时可以软化流动，加热到一定温度，产生化学反应一交联反应而固化变硬，这种变化是不可逆的，此后，再次加热时，已不能再变软流动了。热固性的树脂固化前是线型或带支链的，固化后分子链之间形成化学键，成为三维的网状结构，质地坚硬，加热不再软化，不仅不能再熔触，在溶剂中也不能溶解，即一旦固化后便具备了不溶不融的特性。\n\n[0105]从而避免了在高温环境下或大功率LED器件中，由于绑定材料的熔融，而导致芯片与驱动电路的接触变差，或Micro-LED芯片与驱动电极触点位置发生偏移的问题，从而改善了显示面板的性能。\n\n[0106]通过采用导电热固化材料取代焊锡，用来进行绑定的方法，除了使用于上述实施例所述的Micro-LED显示面板，其适用范围还包括mini-LED、LED行业等行业，在此不做限定，所有符合本发明实施提供的导电热固化材料，和采用导电热固化材料进行绑定的方法都是本发明的保护内容。\n\n[0107]根据上述实施例可知：\n\n[0108]本发明实施例提供一种绑定材料、显示面板及Micro-LED芯片的绑定方法，其显示面板包括：显示基板，显示基板上设置有驱动电路和触点，触点与驱动电路电连接；Micro-LED芯片，Micro-LED芯片上设置有接触电极；绑定材料，用于连接触点与接触电极，并将Micro-LED芯片绑定在显示基板上；其中，绑定材料为导电热固化材料。通过导电热固化材料来实现Micro-LED芯片在显示基板上的绑定，利用导电热固化材料的导电性，实现了Micro-LED芯片和驱动电路的电连接，利用导电热固化材料固化的不可逆性，避免了在高温环境下或大功率LED器件中，由于绑定材料的熔融，而导致Micro-LED芯片与驱动电路的接触变差，或Micro-LED芯片与驱动电极触点位置发生偏移的问题，从而改善了显示面板的性能。\n\n[0109]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10716, 23770, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其是涉及一种显示面板和显示装置。\n\n背景技术\n\n[0002]现有LED(Light-Emitting Diode，发光二极管)显示屏采用Mini-LED(迷你发光二极管)或者Micro-LED(微型发光二极管)作为发光层，将Mini-LED和Micro-LED设置在驱动背板上，使得驱动背板驱动Mini-LED或者Micro-LED发光，实现显示，在驱动背板上存在显示区域和外部引线连接区域，在显示区域和外部引线连接区域存在驱动电路，但由于外部引线连接区域无法显示，使得LED显示屏存在边框，影响观看。\n\n[0003]所以，现有LED显示屏存在外部引线区域较大，导致边框较大的技术问题。\n\n发明内容\n\n[0004]本发明提供一种显示面板和显示装置，用于解决现有LED显示屏存在外部引线区域较大，导致边框较大的技术问题。\n\n[0005]为解决上述问题，本发明提供的技术方案如下：\n\n[0006]本发明提供一种显示面板，该显示面板包括：\n\n[0007]基板；\n\n[0008]驱动电路层，与所述基板贴合设置，包括驱动电路，所述驱动电路包括第一部分、第二部分以及连接所述第一部分和第二部分的连接部分，所述第一部分设置于基板的一侧，所述第二部分设置于所述基板远离所述第一部分的一侧；\n\n[0009]发光层，设置于所述第一部分远离基板的一侧，与所述第一部分连接；\n\n[0010]封装层，设置于所述发光层远离所述第一部分的一侧；\n\n[0011]其中，所述第二部分在所述基板上的投影区域位于所述第一部分在所述基板上的投影区域内。\n\n[0012]在本发明提供的显示面板中，所述基板包括第一基板、第二基板、以及设置于所述第一基板和第二基板之间的光学胶，所述第一部分设置于所述第一基板远离所述第二基板的一侧，所述第二部分设置于所述第二基板远离所述第一基板的一侧。\n\n[0013]在本发明提供的显示面板中，所述第一基板的尺寸与所述第二基板的尺寸相同。\n\n[0014]在本发明提供的显示面板中，所述第一基板上设有第一对位端子，所述第二基板上设有与所述第一对位端子配合的第二对位端子。\n\n[0015]在本发明提供的显示面板中，所述驱动电路的第二部分包括静电防护电路，所述静电防护电路设置于所述基板下侧，所述基板包括上侧面、下侧面、左侧面和右侧面，所述连接部分设置于所述基板的下侧面。\n\n[0016]在本发明提供的显示面板中，所述驱动电路的第二部分包括栅极驱动电路，所述栅极驱动电路设置于所述基板两侧，所述基板包括上侧面、下侧面、左侧面和右侧面，所述连接部分设置于所述基板的左侧面和右侧面。\n\n[0017]在本发明提供的显示面板中，所述发光层包括迷你发光二极管芯片，所述迷你发光二极管芯片包括红色迷你发光二极管芯片、绿色迷你发光二极管芯片和蓝色迷你发光二极管芯片。\n\n[0018]在本发明提供的显示面板中，述连接部分包括多条连接线和位于所述连接线两端的绑定端子，所述绑定端子分别与第一部分和第二部分连接。\n\n[0019]同时，本发明提供一种显示装置，该显示装置包括：\n\n[0020]显示面板，所述显示面板包括基板、驱动电路层、发光层和封装层，所述驱动电路层与所述基板贴合设置，包括驱动电路，所述驱动电路包括第一部分、第二部分以及连接所述第一部分和第二部分的连接部分，所述第一部分设置于基板的一侧，所述第二部分设置于所述基板远离所述第一部分的一侧；所述发光层设置于所述第一部分远离基板的一侧，与所述第一部分连接；所述封装层设置于所述发光层远离所述第一部分的一侧；其中，所述第二部分在所述基板上的投影区域位于所述第一部分在所述基板上的投影区域内；\n\n[0021]覆晶薄膜，所述覆晶薄膜与所述第二部分连接。\n\n[0022]在本发明提供的显示装置中，所述第二部分包括金属走线和连接端子，所述覆晶薄膜与所述连接端子连接。\n\n[0023]有益效果：本发明提供一种显示面板和显示装置，该显示面板包括基板、驱动电路层、发光层和封装层，所述驱动电路层与所述基板贴合设置，包括驱动电路，所述驱动电路包括第一部分、第二部分以及连接所述第一部分和第二部分的连接部分，所述第一部分设置于基板的一侧，所述第二部分设置于所述基板远离所述第一部分的一侧；所述发光层设置于所述第一部分远离基板的一侧，与所述第一部分连接；所述封装层设置于所述发光层远离所述第一部分的一侧；其中，所述第二部分在所述基板上的投影区域位于所述第一部分在所述基板上的投影区域内；通过将驱动电路层的驱动电路划分为第一部分、第二部分和连接部分，使得第一部分位于基板的一侧，第二部分位于基板的另一侧，且使得第二部分在基板上的投影区域位于第一部分在基板上的投影区域内，从而使得第二部分位于显示区域内，从而消除了无法显示的外部引线连接区域，消除了显示面板的边框，从而解决了现有LED显示屏存在外部引线区域较大，导致边框较大的技术问题。\n\n附图说明\n\n[0024]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0025]图1为现有显示装置示意图。\n\n[0026]图2为本发明实施例提供的显示面板的第一示意图。\n\n[0027]图3为本发明实施例提供的显示面板的第二示意图。\n\n[0028]图4为本发明实施例提供的基板的示意图。\n\n[0029]图5为本发明实施例提供的显示面板的第三示意图。\n\n[0030]图6为本发明实施例提供的显示装置的示意图。\n\n[0031]图7为本发明实施例提供的显示面板的制备方法的流程图。\n\n[0032]图8为本发明实施例提供的显示面板的制备方法对应的显示面板的状态图。\n\n具体实施方式\n\n[0033]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0034]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0035]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0036]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0037]下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0038]本发明针对现有LED显示屏存在外部引线区域较大，导致边框较大的技术问题，本发明实施例用以解决该问题。\n\n[0039]如图1所示，现有LED显示装置包括基板11、位于基板上的驱动电路层13、位于驱动电路层的发光芯片14和位于发光芯片上的封装层15，覆晶薄膜12与驱动电路层13连接，其中，驱动电路层13的驱动电路从显示区161延伸至外部引线连接区162与覆晶薄膜12连接，由于外部引线区域较大，且外部引线区域无法显示，导致LED显示屏的边框较大，即现有LED显示屏存在外部引线区域较大，导致边框较大的技术问题。\n\n[0040]如图2所示，本发明实施例提供一种显示面板，该显示面板包括：\n\n[0041]基板21；\n\n[0042]驱动电路层22，与所述基板21贴合设置，包括驱动电路，所述驱动电路包括第一部分221、第二部分222以及连接所述第一部分221和第二部分222的连接部分223，所述第一部分221设置于基板21的一侧，所述第二部分222设置于所述基板21远离所述第一部分221的一侧；\n\n[0043]发光层23，设置于所述第一部分221远离基板21的一侧，与所述第一部分221连接；\n\n[0044]封装层24，设置于所述发光层23远离所述第一部分221的一侧；\n\n[0045]其中，所述第二部分222在所述基板21上的投影区域位于所述第一部分221在所述基板21上的投影区域内。\n\n[0046]本发明实施例提供一种显示面板，该显示面板包括基板、驱动电路层、发光层和封装层，所述驱动电路层与所述基板贴合设置，包括驱动电路，所述驱动电路包括第一部分、第二部分以及连接所述第一部分和第二部分的连接部分，所述第一部分设置于基板的一侧，所述第二部分设置于所述基板远离所述第一部分的一侧；所述发光层设置于所述第一部分远离基板的一侧，与所述第一部分连接；所述封装层设置于所述发光层远离所述第一部分的一侧；其中，所述第二部分在所述基板上的投影区域位于所述第一部分在所述基板上的投影区域内；通过将驱动电路层的驱动电路划分为第一部分、第二部分和连接部分，使得第一部分位于基板的一侧，第二部分位于基板的另一侧，且使得第二部分在基板上的投影区域位于第一部分在基板上的投影区域内，从而使得第二部分位于显示区域内，从而消除了无法显示的外部引线连接区域，消除了显示面板的边框，从而解决了现有LED显示屏存在外部引线区域较大，导致边框较大的技术问题。\n\n[0047]需要说明的是，投影区域指驱动电路的第一部分或者第二部分的走线的投影构成的最大的区域，即在第二部分的走线的投影不落在第一部分的走线的投影上时，但第二部分的走线的投影落在第一部分的走线的投影构成的最大的区域内，这时，第二部分的投影也位于第一部分的投影区域内。\n\n[0048]在一种实施例中，如图3所示，所述基板21包括第一基板211、第二基板212、以及设置于所述第一基板211和第二基板212之间的光学胶，所述第一部分221设置于所述第一基板211远离所述第二基板212的一侧，所述第二部分222设置于所述第二基板212远离所述第一基板211的一侧，为了将驱动电路的第一部分和第二部分都放置在显示区内，在一种情况下，可以分别在基板的正面和背面制备驱动的第一部分和第二部分，从而使得驱动电路的第一部分与第二部分均位于显示区，或者将基板划分为第一基板和第二基板，使得分别在第一基板和第二基板上形成驱动电路的第一部分和第二部分，然后通过光学胶将第一基板和第二基板连接起来，使得分别制备驱动电路的第一部分和第二部分，从而避免在基板的正面制备完成第一部分后，在背面制备第二部分时，损伤第一部分，使得制备过程较为简单，且制备得到的驱动电路的第一部分和第二部分完整。\n\n[0049]在一种实施例中，所述第一基板的尺寸与所述第二基板的尺寸相同，即第一基板的长度与第二基板的长度相等、第一基板的宽度与第二基板的宽度相等，第一基板的厚度与第二基板的厚度相等，第一基板的尺寸与第二基板的尺寸相同，使得提供第一基板和第二基板时，选择相同的基板作为第一基板和第二基板即可，第一基板和第二基板的尺寸相同，同时可以根据基板的厚度需求选择第一基板的厚度，使得得到的基板厚度不会太厚导致显示面板过厚，也不会由于基板过薄导致基板损伤，同时，得到的基板是四侧对齐的基板，不会出现基板有超出的部分。\n\n[0050]在一种实施例中，所述第一基板上设有第一对位端子，所述第二基板上设有与所述第一对位端子配合的第二对位端子，在第一基板与第二基板贴合形成基板时，需要使得第一基板与第二基板准确贴合，可分别在第一基板上设置第一对位端子，在第二基板上设置第二对位端子，使得第一对位端子和第二对位端子配合，从而使得第一基板与第二基板准确贴合，其中，对位端子可以采取凹槽与凸起的配合方式配合，例如第一对位端子为凸起，第二对位端子为与所述凸起配合的凹槽；或者第一对位端子为凹槽，第二对位端子为与所述凹槽配合的凸起，从而使得第一基板和第二基板通过第一对位端子和第二对位端子对位，需要说明的是，考虑到第一基板和第二基板之间设有粘合的光学胶，在将光学胶涂布到第一基板或者第二基板上时，需要将第一对位端子或者第二对位端子露出，从而使得第一对位端子与第二对位端子配合对位。\n\n[0051]在一种实施例中，可以在第一基板和第二基板的侧面设置刻度、可在第一基板和第二基板的相应的两个相邻的侧面设置刻度，或者在第一基板和第二基板的相应四个侧面设置刻度，通过将刻度对齐，使得第一基板和第二基板对齐。\n\n[0052]如图4所示，本发明实施例提供一种基板，该基板21包括上侧411、下侧412、左侧413、右侧414、上侧面、下侧面415、左侧面、右侧面416，所述上侧与下侧相对，所述左侧与右侧相对，所述上侧面与下侧面相对，所述左侧面与右侧面相对。\n\n[0053]在一种实施例中，如图5所示，所述驱动电路的第二部分包括静电防护电路512，所述静电防护电路512设置于所述基板21下侧，所述基板包括上侧面、下侧面、左侧面和右侧面，所述连接部分设置于所述基板的下侧面，在现有显示面板中，会将静电防护电路放置在显示面板的下侧非显示区中，从而造成显示面板的下侧存在边框，本发明实施例通过将静电防护电路放置在基板的下侧，使得静电防护电路位于显示面板的显示区内，然后通过在基板背面的下侧面设置连接部分，使得连接部分将静电防护电路与基板正面的第一部分连接，从而使得静电防护电路正常工作，从而在不影响静电防护电路工作的同时，减小显示面板的下边框的宽度。\n\n[0054]在一种实施例中，如图5所示，所述驱动电路的第二部分包括栅极驱动电路511，所述栅极驱动电路211设置于所述基板21两侧，所述基板包括上侧面、下侧面、左侧面和右侧面，所述连接部分设置于所述基板的左侧面和右侧面，在现有技术中，会在显示面板的两侧非显示区设置栅极驱动电路，从而使得两侧无需使用芯片，但栅极驱动电路同样会造成显示面板存在两侧的边框，本发明实施例通过将栅极驱动电路设置于基板背面的左侧和右侧，然后将连接部分设置在基板的左侧面和右侧面，使得栅极驱动电路与第一部分连接，从而使得栅极驱动电路正常工作的同时，显示面板的左右边框减小。\n\n[0055]在一种实施例中，所述发光层包括迷你发光二极管芯片，所述迷你发光二极管芯片包括红色迷你发光二极管芯片、绿色迷你发光二极管芯片和蓝色迷你发光二极管芯片；在发光层的设置中，以红色迷你发光二极管芯片、绿色迷你发光二极管芯片、蓝色迷你发光二极管芯片作为发光源，通过将三种迷你发光二极管芯片与驱动电路连接，使得驱动电路驱动迷你发光二极管芯片发光，从而使得发光层发出各种色彩的光线，从而实现画面显示。\n\n[0056]在一种实施例中，所述发光层包括微型发光二极管芯片，所述微型发光二极管芯片包括红色微型发光二极管芯片、绿色微型发光二极管芯片和蓝色微型发光二极管芯片。\n\n[0057]在一种实施例中，所述连接部分包括多条连接线和位于所述连接线两端的绑定端子，所述绑定端子分别与第一部分和第二部分连接；在设置连接部分时，可将连接部分的连接线的两端设置在绑定端子内，然后将绑定端子分别与第一部分的走线的一端和第二部分的走线的一端连接，从而实现第一部分和第二部分的正常连接，从而使得第一部分、第二部分、连接部分形成完整的驱动电路，使得显示面板正常工作。\n\n[0058]如图6所示，本发明实施例提供一种显示装置，该显示装置包括：\n\n[0059]显示面板，所述显示面板包括基板21、驱动电路层22、发光层23和封装层24，所述驱动电路层22与所述基板21贴合设置，包括驱动电路，所述驱动电路包括第一部分221、第二部分222以及连接所述第一部分221和第二部分222的连接部分223，所述第一部分221设置于基板21的一侧，所述第二部分222设置于所述基板21远离所述第一部分221的一侧；所述发光层23设置于所述第一部分221远离基板21的一侧，与所述第一部分221连接；所述封装层24设置于所述发光层23远离所述第一部分221的一侧；其中，所述第二部分222在所述基板21上的投影区域位于所述第一部分221在所述基板21上的投影区域内；\n\n[0060]覆晶薄膜61，所述覆晶薄膜61与所述第二部分222连接。\n\n[0061]本发明实施例提供一种显示装置，该显示装置包括显示面板和覆晶薄膜，所述显示面板包括基板、驱动电路层、发光层和封装层，所述驱动电路层与所述基板贴合设置，包括驱动电路，所述驱动电路包括第一部分、第二部分以及连接所述第一部分和第二部分的连接部分，所述第一部分设置于基板的一侧，所述第二部分设置于所述基板远离所述第一部分的一侧；所述发光层设置于所述第一部分远离基板的一侧，与所述第一部分连接；所述封装层设置于所述发光层远离所述第一部分的一侧；其中，所述第二部分在所述基板上的投影区域位于所述第一部分在所述基板上的投影区域内；所述覆晶薄膜与所述第二部分连接；通过将驱动电路层的驱动电路划分为第一部分、第二部分和连接部分，使得第一部分位于基板的一侧，第二部分位于基板的另一侧，且使得第二部分在基板上的投影区域位于第一部分在基板上的投影区域内，从而使得第二部分位于显示区域内，从而消除了无法显示的外部引线连接区域，消除了显示面板的边框，从而解决了现有LED显示屏存在外部引线区域较大，导致边框较大的技术问题。\n\n[0062]在一种实施例中，所述第二部分包括金属走线和连接端子，所述覆晶薄膜与所述连接端子连接，在覆晶薄膜与驱动电路连接，从而控制驱动电路时，将覆晶薄膜与第二部分的连接端子连接，由于第二部分通过连接部分与第一部分连接，使得覆晶薄膜控制驱动电路工作，进而控制显示装置显示。\n\n[0063]如图7所示，本发明实施例提供一种显示面板制备方法，该显示面板制备方法包括：\n\n[0064]S1，提供第一基板和第二基板；\n\n[0065]S2，分别在所述第一基板制备驱动电路的第一部分、在所述第二基板上制备驱动电路的第二部分；\n\n[0066]S3，将设有第一部分的第一基板与设有第二部分的第二基板通过光学胶贴合，所述第一部分设置于所述第一基板远离所述第二基板的一侧，所述第二部分设置于所述第二基板远离所述第一基板的一侧；\n\n[0067]S4，在第一基板、第二基板和光学胶的侧面形成驱动电路的连接部分，所述连接部分连接第一部分和第二部分，所述第一部分、第二部分和连接部分形成驱动电路，所述驱动电路形成驱动电路层；\n\n[0068]S5，在所述第一部分上形成发光层；\n\n[0069]S6，在所述发光层上形成封装层。\n\n[0070]本发明实施例提供一种显示面板的制备方法，该显示面板的制备方法制备的显示面板包括基板、驱动电路层、发光层和封装层，所述驱动电路层与所述基板贴合设置，包括驱动电路，所述驱动电路包括第一部分、第二部分以及连接所述第一部分和第二部分的连接部分，所述第一部分设置于基板的一侧，所述第二部分设置于所述基板远离所述第一部分的一侧；所述发光层设置于所述第一部分远离基板的一侧，与所述第一部分连接；所述封装层设置于所述发光层远离所述第一部分的一侧；其中，所述第二部分在所述基板上的投影区域位于所述第一部分在所述基板上的投影区域内；通过将驱动电路层的驱动电路划分为第一部分、第二部分和连接部分，使得第一部分位于基板的一侧，第二部分位于基板的另一侧，且使得第二部分在基板上的投影区域位于第一部分在基板上的投影区域内，从而使得第二部分位于显示区域内，从而消除了无法显示的外部引线连接区域，消除了显示面板的边框，从而解决了现有LED显示屏存在外部引线区域较大，导致边框较大的技术问题。\n\n[0071]在一种实施例中，制备所述连接部分的步骤包括使用喷墨打印或者印刷形成连接部分。\n\n[0072]如图8所示，图8中的(a)为对应图7中的步骤S1的显示面板状态图；图8中的(b)为对应图7中的步骤S2的显示面板的状态图；图8中的(c)为对应图7中的步骤S3的显示面板的状态图；图8中的(d)为对应图7中的步骤S4的显示面板的状态图。\n\n[0073]根据以上实施例可知：\n\n[0074]本发明实施例提供一种显示面板及其制备方法、显示装置，该显示面板包括基板、驱动电路层、发光层和封装层，所述驱动电路层与所述基板贴合设置，包括驱动电路，所述驱动电路包括第一部分、第二部分以及连接所述第一部分和第二部分的连接部分，所述第一部分设置于基板的一侧，所述第二部分设置于所述基板远离所述第一部分的一侧；所述发光层设置于所述第一部分远离基板的一侧，与所述第一部分连接；所述封装层设置于所述发光层远离所述第一部分的一侧；其中，所述第二部分在所述基板上的投影区域位于所述第一部分在所述基板上的投影区域内；通过将驱动电路层的驱动电路划分为第一部分、第二部分和连接部分，使得第一部分位于基板的一侧，第二部分位于基板的另一侧，且使得第二部分在基板上的投影区域位于第一部分在基板上的投影区域内，从而使得第二部分位于显示区域内，从而消除了无法显示的外部引线连接区域，消除了显示面板的边框，从而解决了现有LED显示屏存在外部引线区域较大，导致边框较大的技术问题。\n\n[0075]以上对本发明实施例所提供的一种显示面板和显示装置进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其是涉及一种显示面板和显示装置。\n\n背景技术\n\n[0002]现有LED(Light-Emitting Diode，发光二极管)显示屏采用Mini-LED(迷你发光二极管)或者Micro-LED(微型发光二极管)作为发光层，将Mini-LED和Micro-LED设置在驱动背板上，使得驱动背板驱动Mini-LED或者Micro-LED发光，实现显示，在驱动背板上存在显示区域和外部引线连接区域，在显示区域和外部引线连接区域存在驱动电路，但由于外部引线连接区域无法显示，使得LED显示屏存在边框，影响观看。\n\n[0003]所以，现有LED显示屏存在外部引线区域较大，导致边框较大的技术问题。\n\n发明内容\n\n[0004]本发明提供一种显示面板和显示装置，用于解决现有LED显示屏存在外部引线区域较大，导致边框较大的技术问题。\n\n[0005]为解决上述问题，本发明提供的技术方案如下：\n\n[0006]本发明提供一种显示面板，该显示面板包括：\n\n[0007]基板；\n\n[0008]驱动电路层，与所述基板贴合设置，包括驱动电路，所述驱动电路包括第一部分、第二部分以及连接所述第一部分和第二部分的连接部分，所述第一部分设置于基板的一侧，所述第二部分设置于所述基板远离所述第一部分的一侧；\n\n[0009]发光层，设置于所述第一部分远离基板的一侧，与所述第一部分连接；\n\n[0010]封装层，设置于所述发光层远离所述第一部分的一侧；\n\n[0011]其中，所述第二部分在所述基板上的投影区域位于所述第一部分在所述基板上的投影区域内。\n\n[0012]在本发明提供的显示面板中，所述基板包括第一基板、第二基板、以及设置于所述第一基板和第二基板之间的光学胶，所述第一部分设置于所述第一基板远离所述第二基板的一侧，所述第二部分设置于所述第二基板远离所述第一基板的一侧。\n\n[0013]在本发明提供的显示面板中，所述第一基板的尺寸与所述第二基板的尺寸相同。\n\n[0014]在本发明提供的显示面板中，所述第一基板上设有第一对位端子，所述第二基板上设有与所述第一对位端子配合的第二对位端子。\n\n[0015]在本发明提供的显示面板中，所述驱动电路的第二部分包括静电防护电路，所述静电防护电路设置于所述基板下侧，所述基板包括上侧面、下侧面、左侧面和右侧面，所述连接部分设置于所述基板的下侧面。\n\n[0016]在本发明提供的显示面板中，所述驱动电路的第二部分包括栅极驱动电路，所述栅极驱动电路设置于所述基板两侧，所述基板包括上侧面、下侧面、左侧面和右侧面，所述连接部分设置于所述基板的左侧面和右侧面。\n\n[0017]在本发明提供的显示面板中，所述发光层包括迷你发光二极管芯片，所述迷你发光二极管芯片包括红色迷你发光二极管芯片、绿色迷你发光二极管芯片和蓝色迷你发光二极管芯片。\n\n[0018]在本发明提供的显示面板中，述连接部分包括多条连接线和位于所述连接线两端的绑定端子，所述绑定端子分别与第一部分和第二部分连接。\n\n[0019]同时，本发明提供一种显示装置，该显示装置包括：\n\n[0020]显示面板，所述显示面板包括基板、驱动电路层、发光层和封装层，所述驱动电路层与所述基板贴合设置，包括驱动电路，所述驱动电路包括第一部分、第二部分以及连接所述第一部分和第二部分的连接部分，所述第一部分设置于基板的一侧，所述第二部分设置于所述基板远离所述第一部分的一侧；所述发光层设置于所述第一部分远离基板的一侧，与所述第一部分连接；所述封装层设置于所述发光层远离所述第一部分的一侧；其中，所述第二部分在所述基板上的投影区域位于所述第一部分在所述基板上的投影区域内；\n\n[0021]覆晶薄膜，所述覆晶薄膜与所述第二部分连接。\n\n[0022]在本发明提供的显示装置中，所述第二部分包括金属走线和连接端子，所述覆晶薄膜与所述连接端子连接。\n\n[0023]有益效果：本发明提供一种显示面板和显示装置，该显示面板包括基板、驱动电路层、发光层和封装层，所述驱动电路层与所述基板贴合设置，包括驱动电路，所述驱动电路包括第一部分、第二部分以及连接所述第一部分和第二部分的连接部分，所述第一部分设置于基板的一侧，所述第二部分设置于所述基板远离所述第一部分的一侧；所述发光层设置于所述第一部分远离基板的一侧，与所述第一部分连接；所述封装层设置于所述发光层远离所述第一部分的一侧；其中，所述第二部分在所述基板上的投影区域位于所述第一部分在所述基板上的投影区域内；通过将驱动电路层的驱动电路划分为第一部分、第二部分和连接部分，使得第一部分位于基板的一侧，第二部分位于基板的另一侧，且使得第二部分在基板上的投影区域位于第一部分在基板上的投影区域内，从而使得第二部分位于显示区域内，从而消除了无法显示的外部引线连接区域，消除了显示面板的边框，从而解决了现有LED显示屏存在外部引线区域较大，导致边框较大的技术问题。\n\n附图说明\n\n[0024]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0025]图1为现有显示装置示意图。\n\n[0026]图2为本发明实施例提供的显示面板的第一示意图。\n\n[0027]图3为本发明实施例提供的显示面板的第二示意图。\n\n[0028]图4为本发明实施例提供的基板的示意图。\n\n[0029]图5为本发明实施例提供的显示面板的第三示意图。\n\n[0030]图6为本发明实施例提供的显示装置的示意图。\n\n[0031]图7为本发明实施例提供的显示面板的制备方法的流程图。\n\n[0032]图8为本发明实施例提供的显示面板的制备方法对应的显示面板的状态图。\n\n具体实施方式\n\n[0033]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0034]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0035]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0036]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0037]下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0038]本发明针对现有LED显示屏存在外部引线区域较大，导致边框较大的技术问题，本发明实施例用以解决该问题。\n\n[0039]如图1所示，现有LED显示装置包括基板11、位于基板上的驱动电路层13、位于驱动电路层的发光芯片14和位于发光芯片上的封装层15，覆晶薄膜12与驱动电路层13连接，其中，驱动电路层13的驱动电路从显示区161延伸至外部引线连接区162与覆晶薄膜12连接，由于外部引线区域较大，且外部引线区域无法显示，导致LED显示屏的边框较大，即现有LED显示屏存在外部引线区域较大，导致边框较大的技术问题。\n\n[0040]如图2所示，本发明实施例提供一种显示面板，该显示面板包括：\n\n[0041]基板21；\n\n[0042]驱动电路层22，与所述基板21贴合设置，包括驱动电路，所述驱动电路包括第一部分221、第二部分222以及连接所述第一部分221和第二部分222的连接部分223，所述第一部分221设置于基板21的一侧，所述第二部分222设置于所述基板21远离所述第一部分221的一侧；\n\n[0043]发光层23，设置于所述第一部分221远离基板21的一侧，与所述第一部分221连接；\n\n[0044]封装层24，设置于所述发光层23远离所述第一部分221的一侧；\n\n[0045]其中，所述第二部分222在所述基板21上的投影区域位于所述第一部分221在所述基板21上的投影区域内。\n\n[0046]本发明实施例提供一种显示面板，该显示面板包括基板、驱动电路层、发光层和封装层，所述驱动电路层与所述基板贴合设置，包括驱动电路，所述驱动电路包括第一部分、第二部分以及连接所述第一部分和第二部分的连接部分，所述第一部分设置于基板的一侧，所述第二部分设置于所述基板远离所述第一部分的一侧；所述发光层设置于所述第一部分远离基板的一侧，与所述第一部分连接；所述封装层设置于所述发光层远离所述第一部分的一侧；其中，所述第二部分在所述基板上的投影区域位于所述第一部分在所述基板上的投影区域内；通过将驱动电路层的驱动电路划分为第一部分、第二部分和连接部分，使得第一部分位于基板的一侧，第二部分位于基板的另一侧，且使得第二部分在基板上的投影区域位于第一部分在基板上的投影区域内，从而使得第二部分位于显示区域内，从而消除了无法显示的外部引线连接区域，消除了显示面板的边框，从而解决了现有LED显示屏存在外部引线区域较大，导致边框较大的技术问题。\n\n[0047]需要说明的是，投影区域指驱动电路的第一部分或者第二部分的走线的投影构成的最大的区域，即在第二部分的走线的投影不落在第一部分的走线的投影上时，但第二部分的走线的投影落在第一部分的走线的投影构成的最大的区域内，这时，第二部分的投影也位于第一部分的投影区域内。\n\n[0048]在一种实施例中，如图3所示，所述基板21包括第一基板211、第二基板212、以及设置于所述第一基板211和第二基板212之间的光学胶，所述第一部分221设置于所述第一基板211远离所述第二基板212的一侧，所述第二部分222设置于所述第二基板212远离所述第一基板211的一侧，为了将驱动电路的第一部分和第二部分都放置在显示区内，在一种情况下，可以分别在基板的正面和背面制备驱动的第一部分和第二部分，从而使得驱动电路的第一部分与第二部分均位于显示区，或者将基板划分为第一基板和第二基板，使得分别在第一基板和第二基板上形成驱动电路的第一部分和第二部分，然后通过光学胶将第一基板和第二基板连接起来，使得分别制备驱动电路的第一部分和第二部分，从而避免在基板的正面制备完成第一部分后，在背面制备第二部分时，损伤第一部分，使得制备过程较为简单，且制备得到的驱动电路的第一部分和第二部分完整。\n\n[0049]在一种实施例中，所述第一基板的尺寸与所述第二基板的尺寸相同，即第一基板的长度与第二基板的长度相等、第一基板的宽度与第二基板的宽度相等，第一基板的厚度与第二基板的厚度相等，第一基板的尺寸与第二基板的尺寸相同，使得提供第一基板和第二基板时，选择相同的基板作为第一基板和第二基板即可，第一基板和第二基板的尺寸相同，同时可以根据基板的厚度需求选择第一基板的厚度，使得得到的基板厚度不会太厚导致显示面板过厚，也不会由于基板过薄导致基板损伤，同时，得到的基板是四侧对齐的基板，不会出现基板有超出的部分。\n\n[0050]在一种实施例中，所述第一基板上设有第一对位端子，所述第二基板上设有与所述第一对位端子配合的第二对位端子，在第一基板与第二基板贴合形成基板时，需要使得第一基板与第二基板准确贴合，可分别在第一基板上设置第一对位端子，在第二基板上设置第二对位端子，使得第一对位端子和第二对位端子配合，从而使得第一基板与第二基板准确贴合，其中，对位端子可以采取凹槽与凸起的配合方式配合，例如第一对位端子为凸起，第二对位端子为与所述凸起配合的凹槽；或者第一对位端子为凹槽，第二对位端子为与所述凹槽配合的凸起，从而使得第一基板和第二基板通过第一对位端子和第二对位端子对位，需要说明的是，考虑到第一基板和第二基板之间设有粘合的光学胶，在将光学胶涂布到第一基板或者第二基板上时，需要将第一对位端子或者第二对位端子露出，从而使得第一对位端子与第二对位端子配合对位。\n\n[0051]在一种实施例中，可以在第一基板和第二基板的侧面设置刻度、可在第一基板和第二基板的相应的两个相邻的侧面设置刻度，或者在第一基板和第二基板的相应四个侧面设置刻度，通过将刻度对齐，使得第一基板和第二基板对齐。\n\n[0052]如图4所示，本发明实施例提供一种基板，该基板21包括上侧411、下侧412、左侧413、右侧414、上侧面、下侧面415、左侧面、右侧面416，所述上侧与下侧相对，所述左侧与右侧相对，所述上侧面与下侧面相对，所述左侧面与右侧面相对。\n\n[0053]在一种实施例中，如图5所示，所述驱动电路的第二部分包括静电防护电路512，所述静电防护电路512设置于所述基板21下侧，所述基板包括上侧面、下侧面、左侧面和右侧面，所述连接部分设置于所述基板的下侧面，在现有显示面板中，会将静电防护电路放置在显示面板的下侧非显示区中，从而造成显示面板的下侧存在边框，本发明实施例通过将静电防护电路放置在基板的下侧，使得静电防护电路位于显示面板的显示区内，然后通过在基板背面的下侧面设置连接部分，使得连接部分将静电防护电路与基板正面的第一部分连接，从而使得静电防护电路正常工作，从而在不影响静电防护电路工作的同时，减小显示面板的下边框的宽度。\n\n[0054]在一种实施例中，如图5所示，所述驱动电路的第二部分包括栅极驱动电路511，所述栅极驱动电路211设置于所述基板21两侧，所述基板包括上侧面、下侧面、左侧面和右侧面，所述连接部分设置于所述基板的左侧面和右侧面，在现有技术中，会在显示面板的两侧非显示区设置栅极驱动电路，从而使得两侧无需使用芯片，但栅极驱动电路同样会造成显示面板存在两侧的边框，本发明实施例通过将栅极驱动电路设置于基板背面的左侧和右侧，然后将连接部分设置在基板的左侧面和右侧面，使得栅极驱动电路与第一部分连接，从而使得栅极驱动电路正常工作的同时，显示面板的左右边框减小。\n\n[0055]在一种实施例中，所述发光层包括迷你发光二极管芯片，所述迷你发光二极管芯片包括红色迷你发光二极管芯片、绿色迷你发光二极管芯片和蓝色迷你发光二极管芯片；在发光层的设置中，以红色迷你发光二极管芯片、绿色迷你发光二极管芯片、蓝色迷你发光二极管芯片作为发光源，通过将三种迷你发光二极管芯片与驱动电路连接，使得驱动电路驱动迷你发光二极管芯片发光，从而使得发光层发出各种色彩的光线，从而实现画面显示。\n\n[0056]在一种实施例中，所述发光层包括微型发光二极管芯片，所述微型发光二极管芯片包括红色微型发光二极管芯片、绿色微型发光二极管芯片和蓝色微型发光二极管芯片。\n\n[0057]在一种实施例中，所述连接部分包括多条连接线和位于所述连接线两端的绑定端子，所述绑定端子分别与第一部分和第二部分连接；在设置连接部分时，可将连接部分的连接线的两端设置在绑定端子内，然后将绑定端子分别与第一部分的走线的一端和第二部分的走线的一端连接，从而实现第一部分和第二部分的正常连接，从而使得第一部分、第二部分、连接部分形成完整的驱动电路，使得显示面板正常工作。\n\n[0058]如图6所示，本发明实施例提供一种显示装置，该显示装置包括：\n\n[0059]显示面板，所述显示面板包括基板21、驱动电路层22、发光层23和封装层24，所述驱动电路层22与所述基板21贴合设置，包括驱动电路，所述驱动电路包括第一部分221、第二部分222以及连接所述第一部分221和第二部分222的连接部分223，所述第一部分221设置于基板21的一侧，所述第二部分222设置于所述基板21远离所述第一部分221的一侧；所述发光层23设置于所述第一部分221远离基板21的一侧，与所述第一部分221连接；所述封装层24设置于所述发光层23远离所述第一部分221的一侧；其中，所述第二部分222在所述基板21上的投影区域位于所述第一部分221在所述基板21上的投影区域内；\n\n[0060]覆晶薄膜61，所述覆晶薄膜61与所述第二部分222连接。\n\n[0061]本发明实施例提供一种显示装置，该显示装置包括显示面板和覆晶薄膜，所述显示面板包括基板、驱动电路层、发光层和封装层，所述驱动电路层与所述基板贴合设置，包括驱动电路，所述驱动电路包括第一部分、第二部分以及连接所述第一部分和第二部分的连接部分，所述第一部分设置于基板的一侧，所述第二部分设置于所述基板远离所述第一部分的一侧；所述发光层设置于所述第一部分远离基板的一侧，与所述第一部分连接；所述封装层设置于所述发光层远离所述第一部分的一侧；其中，所述第二部分在所述基板上的投影区域位于所述第一部分在所述基板上的投影区域内；所述覆晶薄膜与所述第二部分连接；通过将驱动电路层的驱动电路划分为第一部分、第二部分和连接部分，使得第一部分位于基板的一侧，第二部分位于基板的另一侧，且使得第二部分在基板上的投影区域位于第一部分在基板上的投影区域内，从而使得第二部分位于显示区域内，从而消除了无法显示的外部引线连接区域，消除了显示面板的边框，从而解决了现有LED显示屏存在外部引线区域较大，导致边框较大的技术问题。\n\n[0062]在一种实施例中，所述第二部分包括金属走线和连接端子，所述覆晶薄膜与所述连接端子连接，在覆晶薄膜与驱动电路连接，从而控制驱动电路时，将覆晶薄膜与第二部分的连接端子连接，由于第二部分通过连接部分与第一部分连接，使得覆晶薄膜控制驱动电路工作，进而控制显示装置显示。\n\n[0063]如图7所示，本发明实施例提供一种显示面板制备方法，该显示面板制备方法包括：\n\n[0064]S1，提供第一基板和第二基板；\n\n[0065]S2，分别在所述第一基板制备驱动电路的第一部分、在所述第二基板上制备驱动电路的第二部分；\n\n[0066]S3，将设有第一部分的第一基板与设有第二部分的第二基板通过光学胶贴合，所述第一部分设置于所述第一基板远离所述第二基板的一侧，所述第二部分设置于所述第二基板远离所述第一基板的一侧；\n\n[0067]S4，在第一基板、第二基板和光学胶的侧面形成驱动电路的连接部分，所述连接部分连接第一部分和第二部分，所述第一部分、第二部分和连接部分形成驱动电路，所述驱动电路形成驱动电路层；\n\n[0068]S5，在所述第一部分上形成发光层；\n\n[0069]S6，在所述发光层上形成封装层。\n\n[0070]本发明实施例提供一种显示面板的制备方法，该显示面板的制备方法制备的显示面板包括基板、驱动电路层、发光层和封装层，所述驱动电路层与所述基板贴合设置，包括驱动电路，所述驱动电路包括第一部分、第二部分以及连接所述第一部分和第二部分的连接部分，所述第一部分设置于基板的一侧，所述第二部分设置于所述基板远离所述第一部分的一侧；所述发光层设置于所述第一部分远离基板的一侧，与所述第一部分连接；所述封装层设置于所述发光层远离所述第一部分的一侧；其中，所述第二部分在所述基板上的投影区域位于所述第一部分在所述基板上的投影区域内；通过将驱动电路层的驱动电路划分为第一部分、第二部分和连接部分，使得第一部分位于基板的一侧，第二部分位于基板的另一侧，且使得第二部分在基板上的投影区域位于第一部分在基板上的投影区域内，从而使得第二部分位于显示区域内，从而消除了无法显示的外部引线连接区域，消除了显示面板的边框，从而解决了现有LED显示屏存在外部引线区域较大，导致边框较大的技术问题。\n\n[0071]在一种实施例中，制备所述连接部分的步骤包括使用喷墨打印或者印刷形成连接部分。\n\n[0072]如图8所示，图8中的(a)为对应图7中的步骤S1的显示面板状态图；图8中的(b)为对应图7中的步骤S2的显示面板的状态图；图8中的(c)为对应图7中的步骤S3的显示面板的状态图；图8中的(d)为对应图7中的步骤S4的显示面板的状态图。\n\n[0073]根据以上实施例可知：\n\n[0074]本发明实施例提供一种显示面板及其制备方法、显示装置，该显示面板包括基板、驱动电路层、发光层和封装层，所述驱动电路层与所述基板贴合设置，包括驱动电路，所述驱动电路包括第一部分、第二部分以及连接所述第一部分和第二部分的连接部分，所述第一部分设置于基板的一侧，所述第二部分设置于所述基板远离所述第一部分的一侧；所述发光层设置于所述第一部分远离基板的一侧，与所述第一部分连接；所述封装层设置于所述发光层远离所述第一部分的一侧；其中，所述第二部分在所述基板上的投影区域位于所述第一部分在所述基板上的投影区域内；通过将驱动电路层的驱动电路划分为第一部分、第二部分和连接部分，使得第一部分位于基板的一侧，第二部分位于基板的另一侧，且使得第二部分在基板上的投影区域位于第一部分在基板上的投影区域内，从而使得第二部分位于显示区域内，从而消除了无法显示的外部引线连接区域，消除了显示面板的边框，从而解决了现有LED显示屏存在外部引线区域较大，导致边框较大的技术问题。\n\n[0075]以上对本发明实施例所提供的一种显示面板和显示装置进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10717, 23771, '技术领域\n\n[0001]本发明涉及显示技术领域，特别是一种显示面板的电压调节方法及存储介质。\n\n背景技术\n\n[0002]如图1所示，常见的有机发光半导体(OrganicLight-Emitting Diode，OLED)的驱动像素电路为3T1C，其除了可以驱动OLED发光外，还可以通过感应薄膜晶体管侦测器件电性。\n\n[0003]OLED作为电流驱动器件，其发光亮度取决于流过驱动薄膜晶体管的电流。而驱动薄膜晶体管，在OLED发光阶段工作于饱和区，其电流公式为：\n\n[0004]\n\n[0005]其中，其中Ci是单位面积绝缘层电容；μ是迁移率；W是薄膜晶体管的沟道宽度；L是薄膜晶体管的沟道长度；Vgs是薄膜晶体管的的G点与S点电位差；Vth是薄膜晶体管的阈值。因此，可以将电流公式表示为如下，其中k为常量。\n\n[0006]Ids＝k(Vgs-Vth)2。\n\n[0007]因为每个子像素的Vth和常数k都存在一定差异，从而输入相同的Vdata电压信号，会导致OLED不同区域的亮度不同。\n\n[0008]因此，急需提供一种新的显示面板的电压调节方法及计算机可读存储介质，可以解决现有技术中OLED不同区域的亮度不同。\n\n发明内容\n\n[0009]本发明所要解决的技术问题是，本发明提供了一种显示面板的电压调节方法及计算机可读存储介质，对每个显示区域的电压值进行补偿，进而可以得到不同显示区域相同的补偿电压，使得每个显示区域的电流相同。\n\n[0010]为解决上述问题，本发明提供一种显示面板的电压调节方法，包括：数据库建立步骤，录入一显示面板的显示数据，所述显示数据为显示区域的所述电压值和所述调整因子；每个显示区域的电压值相同；第一采集步骤，从所述数据库中采集所述每个显示区域的电压值和调整因子；第一计算步骤，将每个显示区域预设一补偿因子，将每个显示区域的所述电压值与所述调整因子以及所述补偿因子相乘得到一补偿电压；第一调整步骤，调整每个显示区域的所述补偿因子用以使每个显示区域的所述补偿电压相同。\n\n[0011]进一步地，所述显示数据还包括每个显示区域的预设薄膜晶体管的阈值。\n\n[0012]进一步地，还包括：输出步骤，将每个显示区域的所述补偿电压输出至所述显示面板的每个显示区域，对每个显示区域的电流值进行补偿。\n\n[0013]进一步地，在所述对每个显示区域的电流值进行补偿补偿的步骤中，具体包括：检测步骤，检测一每一显示区域的电流值存入至数据库中；第三计算步骤，采集所述每一显示区域的电流值以及所述预设薄膜晶体管的阈值，根据电流同时计算不同显示区域常数k的比例关系并存入数据库中；第二调整步骤，采集所述不同区域常数k的比例关系以及所述每一显示区域的电流值，根据电流公式调整每个显示区域薄膜晶体管的阈值，用以实现每个显示区域的电流相同。\n\n[0014]进一步地，在所述数据库建立步骤之前，还包括：准备步骤，提供所述显示面板，将所述显示面板划分多个显示区域，输入所述电压值至每个显示区域；以及测试步骤，通过一面板亮度测量方法得到每个显示区域的调整因子。\n\n[0015]进一步地，所述显示区域由所述显示面板的一个子像素或多个子像素组成。\n\n[0016]进一步地，在所述测试步骤中，具体包括如下步骤：预感应步骤，打开扫描薄膜晶体管和感应薄膜晶体管，采集G点与S点之间的电压Vgs，公式为：Vgs＝Vdata-Vref，其中Vdata表示写入G点的电压信号；Vref表示写入S点的电压信号；采样步骤，关闭扫描薄膜晶体管，打开感应薄膜晶体管，采集当前G点与S点之间的电压Vgs’；第二计算步骤，计算Vgs’与Vgs的比值得到每个显示区域的调整因子i。\n\n[0017]进一步地，在所述检测步骤中，通过模数转换器转换后的电压值得到每个显示区域的电流值。\n\n[0018]进一步地，所述显示面板包括OLED显示面板、MicroLED显示面板或MiniLED显示面板。\n\n[0019]本发明还提供一种计算机可读存储介质，存储有计算机程序，其特征在于，所述计算机程序在被处理器执行时能够实现如前文所述的显示面板的电压调节方法。\n\n[0020]本发明的有益效果是：本发明提供了一种显示面板的电压调节方法，对每个显示区域的电压值进行补偿，通过在测试步骤中两次测试得到不同Vgs的比值作为本发明的调整因子，进而可以得到不同显示区域相同的补偿电压，可以对G点和S点的电压差得到一补偿，减小对输出步骤的影响；并再次根据第二调整步骤，通过输入的补偿电压检测得到电流，通过电流公式计算得到每个显示区域k的比值，再次通过电流公式对TFT阈值进行调整，使得每个显示区域的电流相同。\n\n附图说明\n\n[0021]下面结合附图和实施例对本发明作进一步的描述。\n\n[0022]图1为现有技术的3T1C驱动电路的电路图；\n\n[0023]图2为本发明提供的显示面板的电压调节方法的流程图；\n\n[0024]图3为本发明提供的测试步骤的流程图；\n\n[0025]图4为本发明提供的输出步骤的流程图。\n\n具体实施方式\n\n[0026]为了更好地理解本发明的内容，下面通过具体的实施例对本发明作进一步说明，但本发明的实施和保护范围不限于此。\n\n[0027]以下实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「顶」、「底」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。\n\n[0028]如图2所示，本发明提供一种显示面板的电压调节方法，包括如下步骤。\n\n[0029]S11)准备步骤，提供一显示面板，将所述显示面板划分多个显示区域，输入一电压值，至每个显示区域；所述显示区域由所述显示面板的一个子像素或多个子像素组成。下面将用V来表示所述电压值，也就是图1中的Vdata信号。\n\n[0030]所述显示面板包括OLED显示面板、MicroLED显示面板或MiniLED显示面板。\n\n[0031]S12)测试步骤，通过面板亮度测量方法得到每个区域的调整因子ai。在所述测试步骤中，每个区域的调整因子ai还可以通过像素仿真的方法得到。\n\n[0032]如图3所示，在所述测试步骤中，具体包括如下步骤。\n\n[0033]S121)预感应步骤，同时参考图1所示，打开扫描薄膜晶体管11和感应薄膜晶体管13，采集G点与S点之间的电压Vgs，公式为：Vgs＝Vdata-Vref；Vdata表示G点的写入信号，Vref表示S点的写入信号。\n\n[0034]S122)采样步骤，关闭扫描薄膜晶体管11，打开感应薄膜晶体管13，采集当前G点与S点之间的电压Vgs’。\n\n[0035]面板亮度测量方法步骤中，预感应步骤和采样步骤分别测得G点与S点之间的电压不相同。原因如下。\n\n[0036]①扫描薄膜晶体管11关闭瞬间的电容耦合效应，造成G点电位降低。②G点存在漏电，造成G点电位降低，不同像素漏电程度不同。\n\n[0037]采样步骤阶段S点电位有改变，G点电位本应因电容耦合而做出相同的改变。但因为G点除了像素电容C，还有其他电容，而且每个像素不完全相同，导致G点电位变化量不一样。\n\n[0038]S123)第二计算步骤，计算Vgs’与Vgs的比值得到每个显示区域的调整因子ai。\n\n[0039]由于Vgs在采样步骤中，不同子像素检测不同。因此本发明将两个阶段测量Vgs的值作为调整因子ai，根据调整因子ai调整电压值V，进而可以实现均衡每个显示区域的Vgs。\n\n[0040]S13)数据库建立步骤，录入一显示面板的显示数据，每个显示数据为显示区域的电压值V和调整因子ai；其中i表示不同显示区域的编号，每个显示区域的电压值V相同。\n\n[0041]所述显示数据还包括一每个显示区域的电流值I和调整因子bi。\n\n[0042]S14)第一采集步骤，从所述数据库中采集所述每个显示区域的电压值V和调整因子ai。\n\n[0043]S15)第一计算步骤，将每个显示区域预设一补偿因子gi，将每个显示区域的电压值V与调整因子ai以及补偿因子gi相乘得到一补偿电压。\n\n[0044]S16)第一调整步骤，调整每个显示区域的所述补偿因子gi用以使每个显示区域的所述补偿电压相同，所述补偿电压不能超过显示面板的额定电压。\n\n[0045]S17)输出步骤，将所述每个显示区域的补偿电压输出至所述显示面板的每个显示区域，根据调整因子bi调整每个显示区域的电流I，使每个显示区域均匀发光。\n\n[0046]在所述输出步骤中，具体包括。\n\n[0047]S171)检测步骤，检测一每一显示区域的电流值存入至数据库中。具体步骤可与步骤S122)相同，关闭扫描薄膜晶体管11，打开感应薄膜晶体管13，电流从VDD经驱动薄膜晶体管12和感应薄膜晶体管13对导线寄生电容或者数模转化器(ADC)中的电容充电。经过固定时间后通过ADC得到感应线上的电压并转化得到电流值。\n\n[0048]S172)第三计算步骤，采集所述每一显示区域的电流值以及所述预设薄膜晶体管的阈值，根据电流公式计算不同显示区域常数k的比例关系并存入数据库中。所述电流公式和常数k在背景技术中给出。\n\n[0049]S173)第二调整步骤，采集所述不同区域常数k的比例关系以及所述每一显示区域的电流值，根据电流公式调整每个显示区域薄膜晶体管的阈值，用以实现每个显示区域的电流相同。\n\n[0050]本发明提供了一种显示面板的电压调节方法，对每个显示区域的电压值进行补偿，通过在测试步骤中两次测试得到不同Vgs的比值作为本发明的调整因子，进而可以得到不同显示区域相同的补偿电压，可以对G点和S点的电压差得到一补偿，减小对输出步骤的影响；并再次根据第二调整步骤，通过输入的补偿电压检测得到电流，通过电流公式计算得到每个显示区域k的比值，再次通过电流公式对TFT阈值进行调整，使得每个显示区域的电流相同。\n\n[0051]一种计算机可读存储介质，存储有计算机程序，所述计算机程序在被处理器执行时能够实现前文所述的显示面板的电压调节方法。\n\n[0052]本发明还提供一种电子设备，包括存储器、数据库、处理器、时序控制器、栅极驱动器以及数据驱动器。\n\n[0053]所述存储器用于存储可执行程序代码。所述输数据库用以存储显示面板的每个显示区域的显示数据。\n\n[0054]所述处理器通过读取所述可执行程序代码来运行与所述可执行程序代码对应的程序，以执行前文所述的显示面板的电压调节方法。\n\n[0055]在通过第一调整步骤得到的补偿电压，由数据驱动器转换为像素电压，并驱动对应的子像素；最后通过第二调整步骤得到补偿电流并与所述栅极驱动器共同驱动显示面板发光显示。数据库可内置于时序控制器内，也可以独立于时序控制器。\n\n[0056]所述显示面板的电压调节方法对每个显示区域的电压值进行补偿，对每个显示区域的电压值进行补偿，通过在测试步骤中两次测试得到不同Vgs的比值作为本发明的调整因子，进而可以得到不同显示区域相同的补偿电压，可以对G点和S点的电压差得到一补偿，减小对输出步骤的影响；并再次根据第二调整步骤，通过输入的补偿电压检测得到电流，通过电流公式计算得到每个显示区域k的比值，再次通过电流公式对TFT阈值进行调整，使得每个显示区域的电流相同。\n\n[0057]应当指出，对于经充分说明的本发明来说，还可具有多种变换及改型的实施方案，并不局限于上述实施方式的具体实施例。上述实施例仅仅作为本发明的说明，而不是对本发明的限制。总之，本发明的保护范围应包括那些对于本领域普通技术人员来说显而易见的变换或替代以及改型。', '技术领域\n\n[0001]本发明涉及显示技术领域，特别是一种显示面板的电压调节方法及存储介质。\n\n背景技术\n\n[0002]如图1所示，常见的有机发光半导体(OrganicLight-Emitting Diode，OLED)的驱动像素电路为3T1C，其除了可以驱动OLED发光外，还可以通过感应薄膜晶体管侦测器件电性。\n\n[0003]OLED作为电流驱动器件，其发光亮度取决于流过驱动薄膜晶体管的电流。而驱动薄膜晶体管，在OLED发光阶段工作于饱和区，其电流公式为：\n\n[0004]\n\n[0005]其中，其中Ci是单位面积绝缘层电容；μ是迁移率；W是薄膜晶体管的沟道宽度；L是薄膜晶体管的沟道长度；Vgs是薄膜晶体管的的G点与S点电位差；Vth是薄膜晶体管的阈值。因此，可以将电流公式表示为如下，其中k为常量。\n\n[0006]Ids＝k(Vgs-Vth)2。\n\n[0007]因为每个子像素的Vth和常数k都存在一定差异，从而输入相同的Vdata电压信号，会导致OLED不同区域的亮度不同。\n\n[0008]因此，急需提供一种新的显示面板的电压调节方法及计算机可读存储介质，可以解决现有技术中OLED不同区域的亮度不同。\n\n发明内容\n\n[0009]本发明所要解决的技术问题是，本发明提供了一种显示面板的电压调节方法及计算机可读存储介质，对每个显示区域的电压值进行补偿，进而可以得到不同显示区域相同的补偿电压，使得每个显示区域的电流相同。\n\n[0010]为解决上述问题，本发明提供一种显示面板的电压调节方法，包括：数据库建立步骤，录入一显示面板的显示数据，所述显示数据为显示区域的所述电压值和所述调整因子；每个显示区域的电压值相同；第一采集步骤，从所述数据库中采集所述每个显示区域的电压值和调整因子；第一计算步骤，将每个显示区域预设一补偿因子，将每个显示区域的所述电压值与所述调整因子以及所述补偿因子相乘得到一补偿电压；第一调整步骤，调整每个显示区域的所述补偿因子用以使每个显示区域的所述补偿电压相同。\n\n[0011]进一步地，所述显示数据还包括每个显示区域的预设薄膜晶体管的阈值。\n\n[0012]进一步地，还包括：输出步骤，将每个显示区域的所述补偿电压输出至所述显示面板的每个显示区域，对每个显示区域的电流值进行补偿。\n\n[0013]进一步地，在所述对每个显示区域的电流值进行补偿补偿的步骤中，具体包括：检测步骤，检测一每一显示区域的电流值存入至数据库中；第三计算步骤，采集所述每一显示区域的电流值以及所述预设薄膜晶体管的阈值，根据电流同时计算不同显示区域常数k的比例关系并存入数据库中；第二调整步骤，采集所述不同区域常数k的比例关系以及所述每一显示区域的电流值，根据电流公式调整每个显示区域薄膜晶体管的阈值，用以实现每个显示区域的电流相同。\n\n[0014]进一步地，在所述数据库建立步骤之前，还包括：准备步骤，提供所述显示面板，将所述显示面板划分多个显示区域，输入所述电压值至每个显示区域；以及测试步骤，通过一面板亮度测量方法得到每个显示区域的调整因子。\n\n[0015]进一步地，所述显示区域由所述显示面板的一个子像素或多个子像素组成。\n\n[0016]进一步地，在所述测试步骤中，具体包括如下步骤：预感应步骤，打开扫描薄膜晶体管和感应薄膜晶体管，采集G点与S点之间的电压Vgs，公式为：Vgs＝Vdata-Vref，其中Vdata表示写入G点的电压信号；Vref表示写入S点的电压信号；采样步骤，关闭扫描薄膜晶体管，打开感应薄膜晶体管，采集当前G点与S点之间的电压Vgs’；第二计算步骤，计算Vgs’与Vgs的比值得到每个显示区域的调整因子i。\n\n[0017]进一步地，在所述检测步骤中，通过模数转换器转换后的电压值得到每个显示区域的电流值。\n\n[0018]进一步地，所述显示面板包括OLED显示面板、MicroLED显示面板或MiniLED显示面板。\n\n[0019]本发明还提供一种计算机可读存储介质，存储有计算机程序，其特征在于，所述计算机程序在被处理器执行时能够实现如前文所述的显示面板的电压调节方法。\n\n[0020]本发明的有益效果是：本发明提供了一种显示面板的电压调节方法，对每个显示区域的电压值进行补偿，通过在测试步骤中两次测试得到不同Vgs的比值作为本发明的调整因子，进而可以得到不同显示区域相同的补偿电压，可以对G点和S点的电压差得到一补偿，减小对输出步骤的影响；并再次根据第二调整步骤，通过输入的补偿电压检测得到电流，通过电流公式计算得到每个显示区域k的比值，再次通过电流公式对TFT阈值进行调整，使得每个显示区域的电流相同。\n\n附图说明\n\n[0021]下面结合附图和实施例对本发明作进一步的描述。\n\n[0022]图1为现有技术的3T1C驱动电路的电路图；\n\n[0023]图2为本发明提供的显示面板的电压调节方法的流程图；\n\n[0024]图3为本发明提供的测试步骤的流程图；\n\n[0025]图4为本发明提供的输出步骤的流程图。\n\n具体实施方式\n\n[0026]为了更好地理解本发明的内容，下面通过具体的实施例对本发明作进一步说明，但本发明的实施和保护范围不限于此。\n\n[0027]以下实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「顶」、「底」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。\n\n[0028]如图2所示，本发明提供一种显示面板的电压调节方法，包括如下步骤。\n\n[0029]S11)准备步骤，提供一显示面板，将所述显示面板划分多个显示区域，输入一电压值，至每个显示区域；所述显示区域由所述显示面板的一个子像素或多个子像素组成。下面将用V来表示所述电压值，也就是图1中的Vdata信号。\n\n[0030]所述显示面板包括OLED显示面板、MicroLED显示面板或MiniLED显示面板。\n\n[0031]S12)测试步骤，通过面板亮度测量方法得到每个区域的调整因子ai。在所述测试步骤中，每个区域的调整因子ai还可以通过像素仿真的方法得到。\n\n[0032]如图3所示，在所述测试步骤中，具体包括如下步骤。\n\n[0033]S121)预感应步骤，同时参考图1所示，打开扫描薄膜晶体管11和感应薄膜晶体管13，采集G点与S点之间的电压Vgs，公式为：Vgs＝Vdata-Vref；Vdata表示G点的写入信号，Vref表示S点的写入信号。\n\n[0034]S122)采样步骤，关闭扫描薄膜晶体管11，打开感应薄膜晶体管13，采集当前G点与S点之间的电压Vgs’。\n\n[0035]面板亮度测量方法步骤中，预感应步骤和采样步骤分别测得G点与S点之间的电压不相同。原因如下。\n\n[0036]①扫描薄膜晶体管11关闭瞬间的电容耦合效应，造成G点电位降低。②G点存在漏电，造成G点电位降低，不同像素漏电程度不同。\n\n[0037]采样步骤阶段S点电位有改变，G点电位本应因电容耦合而做出相同的改变。但因为G点除了像素电容C，还有其他电容，而且每个像素不完全相同，导致G点电位变化量不一样。\n\n[0038]S123)第二计算步骤，计算Vgs’与Vgs的比值得到每个显示区域的调整因子ai。\n\n[0039]由于Vgs在采样步骤中，不同子像素检测不同。因此本发明将两个阶段测量Vgs的值作为调整因子ai，根据调整因子ai调整电压值V，进而可以实现均衡每个显示区域的Vgs。\n\n[0040]S13)数据库建立步骤，录入一显示面板的显示数据，每个显示数据为显示区域的电压值V和调整因子ai；其中i表示不同显示区域的编号，每个显示区域的电压值V相同。\n\n[0041]所述显示数据还包括一每个显示区域的电流值I和调整因子bi。\n\n[0042]S14)第一采集步骤，从所述数据库中采集所述每个显示区域的电压值V和调整因子ai。\n\n[0043]S15)第一计算步骤，将每个显示区域预设一补偿因子gi，将每个显示区域的电压值V与调整因子ai以及补偿因子gi相乘得到一补偿电压。\n\n[0044]S16)第一调整步骤，调整每个显示区域的所述补偿因子gi用以使每个显示区域的所述补偿电压相同，所述补偿电压不能超过显示面板的额定电压。\n\n[0045]S17)输出步骤，将所述每个显示区域的补偿电压输出至所述显示面板的每个显示区域，根据调整因子bi调整每个显示区域的电流I，使每个显示区域均匀发光。\n\n[0046]在所述输出步骤中，具体包括。\n\n[0047]S171)检测步骤，检测一每一显示区域的电流值存入至数据库中。具体步骤可与步骤S122)相同，关闭扫描薄膜晶体管11，打开感应薄膜晶体管13，电流从VDD经驱动薄膜晶体管12和感应薄膜晶体管13对导线寄生电容或者数模转化器(ADC)中的电容充电。经过固定时间后通过ADC得到感应线上的电压并转化得到电流值。\n\n[0048]S172)第三计算步骤，采集所述每一显示区域的电流值以及所述预设薄膜晶体管的阈值，根据电流公式计算不同显示区域常数k的比例关系并存入数据库中。所述电流公式和常数k在背景技术中给出。\n\n[0049]S173)第二调整步骤，采集所述不同区域常数k的比例关系以及所述每一显示区域的电流值，根据电流公式调整每个显示区域薄膜晶体管的阈值，用以实现每个显示区域的电流相同。\n\n[0050]本发明提供了一种显示面板的电压调节方法，对每个显示区域的电压值进行补偿，通过在测试步骤中两次测试得到不同Vgs的比值作为本发明的调整因子，进而可以得到不同显示区域相同的补偿电压，可以对G点和S点的电压差得到一补偿，减小对输出步骤的影响；并再次根据第二调整步骤，通过输入的补偿电压检测得到电流，通过电流公式计算得到每个显示区域k的比值，再次通过电流公式对TFT阈值进行调整，使得每个显示区域的电流相同。\n\n[0051]一种计算机可读存储介质，存储有计算机程序，所述计算机程序在被处理器执行时能够实现前文所述的显示面板的电压调节方法。\n\n[0052]本发明还提供一种电子设备，包括存储器、数据库、处理器、时序控制器、栅极驱动器以及数据驱动器。\n\n[0053]所述存储器用于存储可执行程序代码。所述输数据库用以存储显示面板的每个显示区域的显示数据。\n\n[0054]所述处理器通过读取所述可执行程序代码来运行与所述可执行程序代码对应的程序，以执行前文所述的显示面板的电压调节方法。\n\n[0055]在通过第一调整步骤得到的补偿电压，由数据驱动器转换为像素电压，并驱动对应的子像素；最后通过第二调整步骤得到补偿电流并与所述栅极驱动器共同驱动显示面板发光显示。数据库可内置于时序控制器内，也可以独立于时序控制器。\n\n[0056]所述显示面板的电压调节方法对每个显示区域的电压值进行补偿，对每个显示区域的电压值进行补偿，通过在测试步骤中两次测试得到不同Vgs的比值作为本发明的调整因子，进而可以得到不同显示区域相同的补偿电压，可以对G点和S点的电压差得到一补偿，减小对输出步骤的影响；并再次根据第二调整步骤，通过输入的补偿电压检测得到电流，通过电流公式计算得到每个显示区域k的比值，再次通过电流公式对TFT阈值进行调整，使得每个显示区域的电流相同。\n\n[0057]应当指出，对于经充分说明的本发明来说，还可具有多种变换及改型的实施方案，并不局限于上述实施方式的具体实施例。上述实施例仅仅作为本发明的说明，而不是对本发明的限制。总之，本发明的保护范围应包括那些对于本领域普通技术人员来说显而易见的变换或替代以及改型。');
INSERT INTO `os_patent_instruction_text` VALUES (10718, 23772, '技术领域\n\n[0001]本申请涉及显示面板技术领域，尤其涉及一种显示面板。\n\n背景技术\n\n[0002]Micro-LED发展成未来显示技术的热点之一，和目前的LCD(Liquid CrystalDisplay，液晶显示器)、OLED(Organic light Emitting Diode，有机发光二极管)显示器件相比，具有反应快、高色域、高PPI(像素密度)、低能耗等优势；但其技术难点多且技术复杂，特别是其关键技术：巨量转移技术。\n\n[0003]Micro-LED芯片在制作完成后需要逐一转移到所需位置，需要转移的LED芯片的数量大且转移后的位置精度要求高，需耗费大量的资源。随着技术的发展，巨量转移技术发展至今已经出了不少技术分支，如静电吸附、镭射激光烧触等。\n\n[0004]LED芯片绑定在显示基板的驱动电路上，通过将Sn(锡，熔点231.89℃)膏(焊料)加热变成熔融的Sn点绑定，Sn冷却后将LED芯片绑定在驱动电路上；但Sn的导热能力较弱，如在大功率的Micro-LED器件中，绑定材料Sn无法快速将Micro-LED芯片的热量传导出来，导致Micro-LED芯片长期处于高温环境中，容易造成器件老化速度加快，降低了Micro-LED产品的使用寿命。\n\n发明内容\n\n[0005]本申请实施例提供一种显示面板，以解决显示面板中LED芯片散热慢的问题。\n\n[0006]本申请实施例提供了一种显示面板，包括驱动基板以及依次设置在所述驱动基板上的导热层、绑定层和LED芯片；\n\n[0007]所述导热层上设有镂空部；所述绑定层填充在所述镂空部中，并与所述驱动基板电连接；所述LED芯片设置在所述绑定层上，并通过所述绑定层与所述驱动基板电连接。\n\n[0008]可选的，所述导热层的材料包括石墨烯。\n\n[0009]可选的，所述绑定层还覆盖在所述导热层远离所述驱动基板的表面上。\n\n[0010]可选的，位于所述镂空部中的绑定层在所述驱动基板上的正投影面积大于所述导热层在所述驱动基板上的正投影面积。\n\n[0011]可选的，所述导热层的厚度为10纳米至1000纳米。\n\n[0012]可选的，所述导热层为网格状结构。\n\n[0013]可选的，所述导热层包括在第一方向上间隔且平行设置的多条第一导热线，以及在第二方向上间隔且平行设置的多条第二导热线；其中，所述第一方向和所述第二方向之间的夹角大于0°，且所述多条第一导热线与所述多条第二导热线交错设置，构成所述网格状结构。\n\n[0014]可选的，任意相邻的两条第一导热线之间的距离大于所述第一导热线的宽度；任意相邻的两条第二导热线之间的距离大于所述第二导热线的宽度。\n\n[0015]可选的，所述第一导热线的宽度和所述第二导热线的宽度均为1微米至5微米。\n\n[0016]可选的，所述驱动基板包括背板以及依次设置在所述背板上的驱动电路层和接触电极，所述接触电极与所述驱动电路层电连接；所述导热层和所述绑定层设置在所述接触电极上，所述LED芯片通过所述绑定层与所述接触电极电连接。\n\n[0017]本申请的有益效果为：本申请在驱动基板和绑定层之间设置具有镂空部的导热层，一方面，通过将绑定层填充在镂空部中实现LED芯片与驱动基板绑定，另一方面，导热能力强的导热层一侧与驱动基板直接连接，另一侧直接与LED芯片连接或者通过厚度非常薄的绑定层与LED芯片连接，可以在不影响LED芯片绑定的前提下及时的将LED芯片产生的热量传导出来，降低了器件老化速度，提高了显示面板的使用寿命，并且本申请提供的显示面板可适用于大功率Micro-LED显示装置。\n\n附图说明\n\n[0018]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0019]图1为本申请实施例提供的一种显示面板的结构示意图；\n\n[0020]图2为本申请实施例提供的一种导热层的俯视图；\n\n[0021]图3为本申请实施例提供的另一种显示面板的结构示意图；\n\n[0022]图4为本申请实施例提供的一种显示面板的制作流程示意图。\n\n具体实施方式\n\n[0023]这里所公开的具体结构和功能细节仅仅是代表性的，并且是用于描述本申请的示例性实施例的目的。但是本申请可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。\n\n[0024]在本申请的描述中，需要理解的是，术语“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。\n\n[0025]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本申请中的具体含义。\n\n[0026]这里所使用的术语仅仅是为了描述具体实施例而不意图限制示例性实施例。除非上下文明确地另有所指，否则这里所使用的单数形式“一个”、“一项”还意图包括复数。还应当理解的是，这里所使用的术语“包括”和/或“包含”规定所陈述的特征、整数、步骤、操作、单元和/或组件的存在，而不排除存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。\n\n[0027]下面结合附图和实施例对本申请作进一步说明。\n\n[0028]如图1所示，本申请实施例提供了一种显示面板1，包括驱动基板2以及依次设置在驱动基板2上的导热层3、绑定层4和LED芯片5；导热层3上设有镂空部6；绑定层4填充在镂空部6中，并与驱动基板2电连接；LED芯片5设置在绑定层4上，并通过绑定层4与驱动基板2电连接。\n\n[0029]具体的，导热层3的材料包括石墨烯，当然，导热层3的材料还可以是导热能力更强的其他材料，此处不做限制；导热层3的厚度为10纳米至1000纳米；LED芯片5包括Micro-LED芯片或Mini-LED芯片；绑定层4的材料包括锡膏。\n\n[0030]具体的，驱动基板2包括背板7以及依次设置在背板7上的驱动电路层8和接触电极9，接触电极9与驱动电路层8电连接；导热层3和绑定层4设置在接触电极9上，由于绑定层4仅填充在镂空部6中，LED芯片5位于绑定层4和导热层3上，LED芯片5通过绑定层4与接触电极9电连接(同时LED芯片5通过绑定层4固定在接触电极9上)，且LED芯片5直接与导热层3接触，可以更快导热。\n\n[0031]具体的，采用狭缝涂布技术或丝网印刷技术形成导热层3。\n\n[0032]本实施例中，在驱动基板2和绑定层4之间设置具有镂空部6的导热层3，一方面，通过将绑定层4填充在镂空部6中实现LED芯片与驱动基板2绑定，另一方面，导热能力强的导热层3一侧与驱动基板2直接连接(具体与接触电极9直接接触)，另一侧直接与LED芯片5连接，可以在不影响LED芯片5绑定的前提下及时的将LED芯片5产生的热量传导出来，降低了器件老化速度，提高了显示面板1的使用寿命，并且本申请提供的显示面板1可适用于大功率Micro-LED显示装置。\n\n[0033]本实施例可选的，位于镂空部6中的绑定层4在驱动基板2上的正投影面积大于导热层3在驱动基板2上的正投影面积。\n\n[0034]具体的，导热层3设置在驱动基板2的接触电极9上，导热层3在驱动基板2上的正投影面积与接触电极9在驱动基板2上的正投影面积之比小于0.5；需要说明的是，本实施例中的导热层3在驱动基板2上的正投影面积为导热层3的实体部分在驱动基板2上的正投影，并不包括镂空部6所占的面积；另外，导热层3的长度和宽度分别与接触电极9的长度和宽度相等，当然，导热层3的长度和宽度也可以分别小于接触电极9的长度和宽度，此处不做限制。\n\n[0035]由于导热层3的作用是导热，没有绑定LED芯片5的作用，为了不影响LED芯片5与驱动基板2的绑定效果和电连接稳定性，需要保证绑定层4与LED芯片5和接触电极9有足够的接触面积；本实施例中，导热层3的正投影面积小于绑定层4的正投影面积可以在提高导热效果的同时保证LED芯片5与驱动基板2的绑定效果和电连接稳定性。\n\n[0036]本实施例可选的，导热层3为网格状结构。具体的，导热层3可以是规则的网格状结构，即镂空部6由呈阵列排布的多个网孔组成；当然，导热层3还可以是不规则的网格状结构，此处不做限制。本实施例中以规则的网格状结构的导热层3为例说明，如图2所示，导热层3包括在第一方向上间隔且平行设置的多条第一导热线10，以及在第二方向上间隔且平行设置的多条第二导热线11；其中，第一方向和第二方向之间的夹角大于0°(例如第一方向和第二方向相互垂直)，且多条第一导热线10与多条第二导热线11交错设置(相交且连通)，构成网格状结构。\n\n[0037]具体的，第一导热线10和第二导热线11可以为直线，也可以为曲线或为波浪线，此处不做限制，本实施例中以直线为例说明。\n\n[0038]具体的，每一条第一导热线10与多条第二导热线11都相交，且每一条第二导热线11与多条第一导热线10都相交，即从LED芯片5传导至导热层3的热量可以由任意一条第一导热线10传导至其他第一导热线10或传导至任意一条第二导热线11上；其中，任意相邻的两条第一导热线10与任意相邻的两条第二导热线11相交围成的区域为第一网孔12，多条第一导热线10与多条第二导热线11相交形成多个呈阵列排布的第一网孔12；任意相邻的两条第一导线与靠近导热层3边缘的第二导线相交围成的区域或者任意相邻的两条第二导线与靠近导热层3的边缘的第一导线相交围成的区域为第二网孔13，多条第一导热线10与多条第二导热线11相交形成多个位于导热层3的边缘的第二网孔13；分别位于导热层3的相邻的两个边缘的第一导热线10与第二导热线11相交围成的区域为第三网孔14，多条第一导热线10与多条第二导热线11相交形成多个位于导热层3的边缘的第三网孔14；多个第一网孔12、多个第二网孔13和多个第三网孔14呈阵列排布组成了镂空部6。\n\n[0039]具体的，多个第一网孔12的大小可以相同也可以不同，多个第二网孔13的大小可以相同也可以不同，多个第三网孔14的大小可以相同也可以不同，此处不做限制。\n\n[0040]本实施例中，导热层3设计为网格状结构，特别是规则的网格状结构，可以使导热层3较均匀的分布在整个接触电极9上，且较均匀的分布在LED芯片5靠近接触电极9的一侧，有利于将LED芯片5不同位置的热量快速传导至接触电极9的不同位置，便于热量快速分散，分散化的热量可以从接触电极9快速传导至驱动基板2的其他位置，达到快速散热的目的。\n\n[0041]本实施例可选的，任意相邻的两条第一导热线10之间的距离大于第一导热线10的宽度；任意相邻的两条第二导热线11之间的距离大于第二导热线11的宽度。具体的，第一导热线10的宽度和第二导热线11的宽度均为1微米至5微米。\n\n[0042]本实施例可以保证导热层3在驱动基板2上的正投影面积小于填充在镂空部6中的绑定层4在驱动基板2上的正投影面积，有利于保证LED芯片5的绑定效果。\n\n[0043]本实施例可选的，接触电极9包括多个呈阵列分布的子电极15；导热层3包括多个子导热层16，每个子导热层16上设有子镂空部17；多个子导热层16与多个子电极15一一对应设置；绑定层4包括多个子绑定层18；多个子绑定层18与多个子导热层16一一对应设置，且子绑定层18填充在对应的子镂空部17中；LED芯片5包括多个LED子芯片19；多个LED子芯片19与多个子绑定层18一一对应设置，每个LED子芯片19通过对应的子绑定层18与对应的子电极15电连接。\n\n[0044]具体的，LED子芯片19包括红色LED芯片、绿色LED芯片和蓝色LED芯片。\n\n[0045]具体的，每个子导热层16为如图2所示的网格状结构。\n\n[0046]本实施例中，显示面板1的发光功能由LED芯片5发光实现，显示面板1的发光区包括多个子像素区，每个子像素区设有一个LED子芯片19，每个LED子芯片19独立的发光，每个LED子芯片19都通过独立设置的子电极15与驱动电路连接；在每个子电极15上对应设置子导热层16可以保证每个LED子芯片19产生的热量可以被快速传导出来达到散热效果。\n\n[0047]如图3所示，本申请实施例还提供了一种显示面板1，与上述实施例不同的在于，绑定层4还覆盖在导热层3远离驱动基板2的表面上，即LED芯片5与导电层之间还设有绑定层4。\n\n[0048]具体的，如图4所示，显示面板1由以下几个步骤制备得到；\n\n[0049]提供驱动基板2，如图4中的a所示；驱动基板2包括背板7以及依次设置在背板7上的驱动电路层8和接触电极9，接触电极9与驱动电路层8电连接；\n\n[0050]采用狭缝涂布技术或丝网印刷技术在接触电极9上形成导热层3，如图4中的b所示；导热层3上设有镂空部6，以裸露出接触电极9；\n\n[0051]在导热层3上覆盖熔融的锡膏，如图4中的c所示；部分锡膏填充在镂空层中，且与接触电极9接触，部分锡膏覆盖在导热层3上；\n\n[0052]将LED芯片5压合在锡膏上，如图4中的d所示，锡膏冷却后形成绑定层4；LED芯片5通过绑定层4与接触电极9电连接。\n\n[0053]具体的，LED芯片5与导热层3之间的绑定层4的厚度较小，对导热速度影响不大。\n\n[0054]本实施例中，在驱动基板2和绑定层4之间设置具有镂空部6的导热层3，一方面，通过将绑定层4填充在镂空部6中实现LED芯片5与驱动基板2绑定，另一方面，导热能力强的导热层3一侧与驱动基板2直接连接，另一侧通过厚度非常薄的绑定层4与LED芯片5连接，可以在不影响LED芯片5绑定的前提下及时的将LED芯片5产生的热量传导出来，降低了器件老化速度，提高了显示面板1的使用寿命，并且本申请提供的显示面板1可适用于大功率Micro-LED显示装置。\n\n[0055]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本申请涉及显示面板技术领域，尤其涉及一种显示面板。\n\n背景技术\n\n[0002]Micro-LED发展成未来显示技术的热点之一，和目前的LCD(Liquid CrystalDisplay，液晶显示器)、OLED(Organic light Emitting Diode，有机发光二极管)显示器件相比，具有反应快、高色域、高PPI(像素密度)、低能耗等优势；但其技术难点多且技术复杂，特别是其关键技术：巨量转移技术。\n\n[0003]Micro-LED芯片在制作完成后需要逐一转移到所需位置，需要转移的LED芯片的数量大且转移后的位置精度要求高，需耗费大量的资源。随着技术的发展，巨量转移技术发展至今已经出了不少技术分支，如静电吸附、镭射激光烧触等。\n\n[0004]LED芯片绑定在显示基板的驱动电路上，通过将Sn(锡，熔点231.89℃)膏(焊料)加热变成熔融的Sn点绑定，Sn冷却后将LED芯片绑定在驱动电路上；但Sn的导热能力较弱，如在大功率的Micro-LED器件中，绑定材料Sn无法快速将Micro-LED芯片的热量传导出来，导致Micro-LED芯片长期处于高温环境中，容易造成器件老化速度加快，降低了Micro-LED产品的使用寿命。\n\n发明内容\n\n[0005]本申请实施例提供一种显示面板，以解决显示面板中LED芯片散热慢的问题。\n\n[0006]本申请实施例提供了一种显示面板，包括驱动基板以及依次设置在所述驱动基板上的导热层、绑定层和LED芯片；\n\n[0007]所述导热层上设有镂空部；所述绑定层填充在所述镂空部中，并与所述驱动基板电连接；所述LED芯片设置在所述绑定层上，并通过所述绑定层与所述驱动基板电连接。\n\n[0008]可选的，所述导热层的材料包括石墨烯。\n\n[0009]可选的，所述绑定层还覆盖在所述导热层远离所述驱动基板的表面上。\n\n[0010]可选的，位于所述镂空部中的绑定层在所述驱动基板上的正投影面积大于所述导热层在所述驱动基板上的正投影面积。\n\n[0011]可选的，所述导热层的厚度为10纳米至1000纳米。\n\n[0012]可选的，所述导热层为网格状结构。\n\n[0013]可选的，所述导热层包括在第一方向上间隔且平行设置的多条第一导热线，以及在第二方向上间隔且平行设置的多条第二导热线；其中，所述第一方向和所述第二方向之间的夹角大于0°，且所述多条第一导热线与所述多条第二导热线交错设置，构成所述网格状结构。\n\n[0014]可选的，任意相邻的两条第一导热线之间的距离大于所述第一导热线的宽度；任意相邻的两条第二导热线之间的距离大于所述第二导热线的宽度。\n\n[0015]可选的，所述第一导热线的宽度和所述第二导热线的宽度均为1微米至5微米。\n\n[0016]可选的，所述驱动基板包括背板以及依次设置在所述背板上的驱动电路层和接触电极，所述接触电极与所述驱动电路层电连接；所述导热层和所述绑定层设置在所述接触电极上，所述LED芯片通过所述绑定层与所述接触电极电连接。\n\n[0017]本申请的有益效果为：本申请在驱动基板和绑定层之间设置具有镂空部的导热层，一方面，通过将绑定层填充在镂空部中实现LED芯片与驱动基板绑定，另一方面，导热能力强的导热层一侧与驱动基板直接连接，另一侧直接与LED芯片连接或者通过厚度非常薄的绑定层与LED芯片连接，可以在不影响LED芯片绑定的前提下及时的将LED芯片产生的热量传导出来，降低了器件老化速度，提高了显示面板的使用寿命，并且本申请提供的显示面板可适用于大功率Micro-LED显示装置。\n\n附图说明\n\n[0018]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0019]图1为本申请实施例提供的一种显示面板的结构示意图；\n\n[0020]图2为本申请实施例提供的一种导热层的俯视图；\n\n[0021]图3为本申请实施例提供的另一种显示面板的结构示意图；\n\n[0022]图4为本申请实施例提供的一种显示面板的制作流程示意图。\n\n具体实施方式\n\n[0023]这里所公开的具体结构和功能细节仅仅是代表性的，并且是用于描述本申请的示例性实施例的目的。但是本申请可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。\n\n[0024]在本申请的描述中，需要理解的是，术语“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。\n\n[0025]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本申请中的具体含义。\n\n[0026]这里所使用的术语仅仅是为了描述具体实施例而不意图限制示例性实施例。除非上下文明确地另有所指，否则这里所使用的单数形式“一个”、“一项”还意图包括复数。还应当理解的是，这里所使用的术语“包括”和/或“包含”规定所陈述的特征、整数、步骤、操作、单元和/或组件的存在，而不排除存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。\n\n[0027]下面结合附图和实施例对本申请作进一步说明。\n\n[0028]如图1所示，本申请实施例提供了一种显示面板1，包括驱动基板2以及依次设置在驱动基板2上的导热层3、绑定层4和LED芯片5；导热层3上设有镂空部6；绑定层4填充在镂空部6中，并与驱动基板2电连接；LED芯片5设置在绑定层4上，并通过绑定层4与驱动基板2电连接。\n\n[0029]具体的，导热层3的材料包括石墨烯，当然，导热层3的材料还可以是导热能力更强的其他材料，此处不做限制；导热层3的厚度为10纳米至1000纳米；LED芯片5包括Micro-LED芯片或Mini-LED芯片；绑定层4的材料包括锡膏。\n\n[0030]具体的，驱动基板2包括背板7以及依次设置在背板7上的驱动电路层8和接触电极9，接触电极9与驱动电路层8电连接；导热层3和绑定层4设置在接触电极9上，由于绑定层4仅填充在镂空部6中，LED芯片5位于绑定层4和导热层3上，LED芯片5通过绑定层4与接触电极9电连接(同时LED芯片5通过绑定层4固定在接触电极9上)，且LED芯片5直接与导热层3接触，可以更快导热。\n\n[0031]具体的，采用狭缝涂布技术或丝网印刷技术形成导热层3。\n\n[0032]本实施例中，在驱动基板2和绑定层4之间设置具有镂空部6的导热层3，一方面，通过将绑定层4填充在镂空部6中实现LED芯片与驱动基板2绑定，另一方面，导热能力强的导热层3一侧与驱动基板2直接连接(具体与接触电极9直接接触)，另一侧直接与LED芯片5连接，可以在不影响LED芯片5绑定的前提下及时的将LED芯片5产生的热量传导出来，降低了器件老化速度，提高了显示面板1的使用寿命，并且本申请提供的显示面板1可适用于大功率Micro-LED显示装置。\n\n[0033]本实施例可选的，位于镂空部6中的绑定层4在驱动基板2上的正投影面积大于导热层3在驱动基板2上的正投影面积。\n\n[0034]具体的，导热层3设置在驱动基板2的接触电极9上，导热层3在驱动基板2上的正投影面积与接触电极9在驱动基板2上的正投影面积之比小于0.5；需要说明的是，本实施例中的导热层3在驱动基板2上的正投影面积为导热层3的实体部分在驱动基板2上的正投影，并不包括镂空部6所占的面积；另外，导热层3的长度和宽度分别与接触电极9的长度和宽度相等，当然，导热层3的长度和宽度也可以分别小于接触电极9的长度和宽度，此处不做限制。\n\n[0035]由于导热层3的作用是导热，没有绑定LED芯片5的作用，为了不影响LED芯片5与驱动基板2的绑定效果和电连接稳定性，需要保证绑定层4与LED芯片5和接触电极9有足够的接触面积；本实施例中，导热层3的正投影面积小于绑定层4的正投影面积可以在提高导热效果的同时保证LED芯片5与驱动基板2的绑定效果和电连接稳定性。\n\n[0036]本实施例可选的，导热层3为网格状结构。具体的，导热层3可以是规则的网格状结构，即镂空部6由呈阵列排布的多个网孔组成；当然，导热层3还可以是不规则的网格状结构，此处不做限制。本实施例中以规则的网格状结构的导热层3为例说明，如图2所示，导热层3包括在第一方向上间隔且平行设置的多条第一导热线10，以及在第二方向上间隔且平行设置的多条第二导热线11；其中，第一方向和第二方向之间的夹角大于0°(例如第一方向和第二方向相互垂直)，且多条第一导热线10与多条第二导热线11交错设置(相交且连通)，构成网格状结构。\n\n[0037]具体的，第一导热线10和第二导热线11可以为直线，也可以为曲线或为波浪线，此处不做限制，本实施例中以直线为例说明。\n\n[0038]具体的，每一条第一导热线10与多条第二导热线11都相交，且每一条第二导热线11与多条第一导热线10都相交，即从LED芯片5传导至导热层3的热量可以由任意一条第一导热线10传导至其他第一导热线10或传导至任意一条第二导热线11上；其中，任意相邻的两条第一导热线10与任意相邻的两条第二导热线11相交围成的区域为第一网孔12，多条第一导热线10与多条第二导热线11相交形成多个呈阵列排布的第一网孔12；任意相邻的两条第一导线与靠近导热层3边缘的第二导线相交围成的区域或者任意相邻的两条第二导线与靠近导热层3的边缘的第一导线相交围成的区域为第二网孔13，多条第一导热线10与多条第二导热线11相交形成多个位于导热层3的边缘的第二网孔13；分别位于导热层3的相邻的两个边缘的第一导热线10与第二导热线11相交围成的区域为第三网孔14，多条第一导热线10与多条第二导热线11相交形成多个位于导热层3的边缘的第三网孔14；多个第一网孔12、多个第二网孔13和多个第三网孔14呈阵列排布组成了镂空部6。\n\n[0039]具体的，多个第一网孔12的大小可以相同也可以不同，多个第二网孔13的大小可以相同也可以不同，多个第三网孔14的大小可以相同也可以不同，此处不做限制。\n\n[0040]本实施例中，导热层3设计为网格状结构，特别是规则的网格状结构，可以使导热层3较均匀的分布在整个接触电极9上，且较均匀的分布在LED芯片5靠近接触电极9的一侧，有利于将LED芯片5不同位置的热量快速传导至接触电极9的不同位置，便于热量快速分散，分散化的热量可以从接触电极9快速传导至驱动基板2的其他位置，达到快速散热的目的。\n\n[0041]本实施例可选的，任意相邻的两条第一导热线10之间的距离大于第一导热线10的宽度；任意相邻的两条第二导热线11之间的距离大于第二导热线11的宽度。具体的，第一导热线10的宽度和第二导热线11的宽度均为1微米至5微米。\n\n[0042]本实施例可以保证导热层3在驱动基板2上的正投影面积小于填充在镂空部6中的绑定层4在驱动基板2上的正投影面积，有利于保证LED芯片5的绑定效果。\n\n[0043]本实施例可选的，接触电极9包括多个呈阵列分布的子电极15；导热层3包括多个子导热层16，每个子导热层16上设有子镂空部17；多个子导热层16与多个子电极15一一对应设置；绑定层4包括多个子绑定层18；多个子绑定层18与多个子导热层16一一对应设置，且子绑定层18填充在对应的子镂空部17中；LED芯片5包括多个LED子芯片19；多个LED子芯片19与多个子绑定层18一一对应设置，每个LED子芯片19通过对应的子绑定层18与对应的子电极15电连接。\n\n[0044]具体的，LED子芯片19包括红色LED芯片、绿色LED芯片和蓝色LED芯片。\n\n[0045]具体的，每个子导热层16为如图2所示的网格状结构。\n\n[0046]本实施例中，显示面板1的发光功能由LED芯片5发光实现，显示面板1的发光区包括多个子像素区，每个子像素区设有一个LED子芯片19，每个LED子芯片19独立的发光，每个LED子芯片19都通过独立设置的子电极15与驱动电路连接；在每个子电极15上对应设置子导热层16可以保证每个LED子芯片19产生的热量可以被快速传导出来达到散热效果。\n\n[0047]如图3所示，本申请实施例还提供了一种显示面板1，与上述实施例不同的在于，绑定层4还覆盖在导热层3远离驱动基板2的表面上，即LED芯片5与导电层之间还设有绑定层4。\n\n[0048]具体的，如图4所示，显示面板1由以下几个步骤制备得到；\n\n[0049]提供驱动基板2，如图4中的a所示；驱动基板2包括背板7以及依次设置在背板7上的驱动电路层8和接触电极9，接触电极9与驱动电路层8电连接；\n\n[0050]采用狭缝涂布技术或丝网印刷技术在接触电极9上形成导热层3，如图4中的b所示；导热层3上设有镂空部6，以裸露出接触电极9；\n\n[0051]在导热层3上覆盖熔融的锡膏，如图4中的c所示；部分锡膏填充在镂空层中，且与接触电极9接触，部分锡膏覆盖在导热层3上；\n\n[0052]将LED芯片5压合在锡膏上，如图4中的d所示，锡膏冷却后形成绑定层4；LED芯片5通过绑定层4与接触电极9电连接。\n\n[0053]具体的，LED芯片5与导热层3之间的绑定层4的厚度较小，对导热速度影响不大。\n\n[0054]本实施例中，在驱动基板2和绑定层4之间设置具有镂空部6的导热层3，一方面，通过将绑定层4填充在镂空部6中实现LED芯片5与驱动基板2绑定，另一方面，导热能力强的导热层3一侧与驱动基板2直接连接，另一侧通过厚度非常薄的绑定层4与LED芯片5连接，可以在不影响LED芯片5绑定的前提下及时的将LED芯片5产生的热量传导出来，降低了器件老化速度，提高了显示面板1的使用寿命，并且本申请提供的显示面板1可适用于大功率Micro-LED显示装置。\n\n[0055]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10719, 23773, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种封装结构、封装结构制程方法及显示面板。\n\n背景技术\n\n[0002]微型发光二极管(Mini/Micro-Light Emitting Diode,Mini/Micro-LED)显示作为下一代显示技术，凭借其真正实现无缝拼接，优秀的显示效果，色彩还原性强，宽视角，高刷新率，高对比度，高稳定性，低功耗，高灰度等优势，显现出比液晶显示(Liquid CrystalDisplay,LCD)和有机发光二极管(Organic Light Emitting Diode,OLED)显示更优异的性能。从长远来看，随着转移等关键技术的突破，微型发光二极管或将全面进入从小屏到大屏的各类显示领域。\n\n[0003]目前，常用的微型发光二极管显示面板封装工艺主要有点胶和压胶两种，其中点胶方式因受围坝宽度的限制，压胶方式受压胶制具精度及对位精度的限制，均不能实现在有效显示区(Active Area,AA)以内精密封装，同时在工艺过程中，还可能造成有效显示区以外溢胶等问题，而以上问题均会影响着拼接缝宽。为了真正实现无缝拼接，现有的微型发光二极管显示面板仍需大大提高其封装工艺精度。\n\n发明内容\n\n[0004]本申请实施例提供一种封装结构、封装结构制程方法及显示面板，能够减小微型发光二极管拼接缝宽并且提高封装工艺精度。\n\n[0005]本申请提供一种封装结构，包括：\n\n[0006]阵列基板，所述阵列基板包括相对设置的第一面和第二面；\n\n[0007]微型发光二极管，所述微型发光二极管设置在所述第一面且所述微型发光二极管对应有效显示区；\n\n[0008]贴合胶材，所述贴合胶材设置在所述第一面和所述微型发光二极管上；\n\n[0009]封装胶材，所述封装胶材覆盖所述第一面、所述微型发光二极管以及所述贴合胶材。\n\n[0010]在一些实施例中，所述贴合胶材为紫外光敏胶材、聚合物胶材、有机胶材、树脂类胶材、有机硅类胶材其中任一种。\n\n[0011]在一些实施例中，所述贴合胶材从阵列基板的边缘延伸至所述微型发光二极管边缘，且所述贴合胶材至少部分覆盖在所述微型发光二极管远离所述阵列基板的一面。\n\n[0012]在一些实施例中，所述贴合胶材从阵列基板的边缘延伸至所述微型发光二极管边缘，且所述贴合胶材完全覆盖所述微型发光二极管远离所述阵列基板的一面。\n\n[0013]本申请提供一种封装结构的制程方法，包括：\n\n[0014]提供一阵列基板，所述阵列基板包括相对设置的第一面和第二面；\n\n[0015]在所述第一面设置微型发光二极管，且所述微型发光二极管对应有效显示区；\n\n[0016]在所述第一面和所述微型发光二极管上设置贴合胶材；\n\n[0017]在所述第一面、所述微型发光二极管以及所述贴合胶材上覆盖封装胶材；\n\n[0018]将所述微型发光二极管对应的有效显示区边缘的所述封装胶材切割；\n\n[0019]将所述第一面的微型发光二极管边缘与阵列基板边缘之间的所述贴合胶材以及所述封装胶材去除。\n\n[0020]在一些实施例中，将所述微型发光二极管对应的有效显示区边缘的所述封装胶材切割，包括：以垂直所述第一面的方向沿微型发光二极管所对应有效显示区边缘切割所述封装胶材。\n\n[0021]在一些实施例中，将所述第一面的微型发光二极管边缘与阵列基板边缘之间的所述贴合胶材以及所述封装胶材去除，包括：\n\n[0022]提供一光罩，遮挡所述微型发光二极管对应的所述有效显示区；\n\n[0023]提供紫外光，照射在所述第一面微型发光二极管边缘至阵列基板边缘以降低贴合胶材的黏度；\n\n[0024]剥离所述第一面微型发光二极管边缘至阵列基板边缘的所述贴合胶材以及所述封装胶材。\n\n[0025]在一些实施例中，在所述第一面和所述微型发光二极管上设置贴合胶材，包括：在所述第一面和所述微型发光二极管上设置多层贴合胶材。\n\n[0026]在一些实施例中，将所述第一面的微型发光二极管边缘与阵列基板边缘之间的所述贴合胶材以及所述封装胶材去除，包括：\n\n[0027]将所述第一面微型发光二极管边缘与阵列基板边缘之间的贴合胶材至少剥离一层，且将所述第一面微型发光二极管边缘与阵列基板边缘之间的封装胶材剥离。\n\n[0028]本申请提供一种显示面板，包括以上所述的封装结构。\n\n[0029]本申请实施例所提供的封装结构，包括阵列基板、微型发光二极管、贴合胶材和封装胶材。阵列基板包括相对设置的第一面和第二面；微型发光二极管设置在第一面且对应有效显示区；贴合胶材设置在第一面和微型发光二极管上；封装胶材覆盖第一面、微型发光二极管以及贴合胶材。通过覆盖贴合胶材，在切割封装胶材的过程中，贴合胶材可作为保护胶材以防止切割工艺对阵列基板造成损害；另外，设置贴合胶材还可大大提高封装工艺精度。\n\n附图说明\n\n[0030]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0031]图1为本申请实施例提供的封装结构示意图。\n\n[0032]图2为本申请实施例提供的另一个封装结构示意图。\n\n[0033]图3为本申请实施例提供的封装工艺流程图。\n\n[0034]图4为本申请实施例提供的局部贴合封装工艺示意图。\n\n[0035]图5为本申请实施例提供的整面贴合封装工艺示意图。\n\n[0036]图6为本申请实施例提供的另一个封装工艺流程图。\n\n[0037]图7为本申请实施例提供的另一个局部贴合封装工艺示意图。\n\n[0038]图8为本申请实施例提供的另一个整面贴合封装工艺示意图。\n\n[0039]图9为本申请实施例提供的又一个封装工艺流程图。\n\n[0040]图10为本申请实施例提供的又一个局部贴合封装工艺示意图。\n\n[0041]图11为本申请实施例提供的另一个整面贴合封装工艺示意图。\n\n[0042]图12为本申请实施例提供的显示面板结构示意图。\n\n具体实施方式\n\n[0043]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0044]需要说明的是，在本申请的描述中，需要理解的是，术语“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。\n\n[0045]本申请实施例提供一种封装结构10，以下对封装结构10做详细介绍。\n\n[0046]请参阅图1，图1是本申请实施例中的封装结构10的一种结构示意图。其中，封装结构10包括阵列基板101、微型发光二极管102，贴合胶材103以及封装胶材104，阵列基板101具有相对设置的第一面101a和第二面101b，微型发光二极管102设置在第一面101a上，设置微型发光二极管102的区域对应为有效显示区105，贴合胶材103设置在第一面101a和微型发光二极管102上，贴合胶材103用于在封装工艺中的切割过程保护阵列基板101，封装胶材104覆盖阵列基板101、微型发光二极管102以及贴合胶材103。通过覆盖贴合胶材103，在切割封装胶材104的过程中，贴合胶材103可作为保护胶材以防止切割工艺对阵列基板101造成损害；另外，设置贴合胶材103还可大大提高封装工艺精度，从而减小微型发光二极管102的拼接缝宽。\n\n[0047]有效显示区(Active Area,AA)指的是显示屏中显示文字图形的可操作区域。\n\n[0048]需要说明的是，第一面101a可以为阵列基板101的上表面，第二面101b可以为阵列基板101的下表面。当然，第一面101a也可以为阵列基板101的下表面，第二面101b可以为阵列基板101的上表面。本申请实施例中不做特殊说明的情况下，默认为第一面101a为阵列基板101的上表面，第二面101b为阵列基板101的下表面。\n\n[0049]其中，阵列基板101可以是薄膜晶体管(Thin Film Transistor，TFT)基板、玻璃基板或柔性基板中任一种。\n\n[0050]其中，贴合胶材103为紫外光敏胶材、聚合物胶材、有机胶材、树脂类胶材、有机硅类胶材其中任一种；贴合胶材103需要同时具备高透明度和至少能耐150℃高温特性；贴合胶材103类型至少包括紫外光(UV)减粘胶、常温易剥离胶材和不可剥离胶材。\n\n[0051]不可剥离胶材是一种透明耐高温保护涂层，干燥成膜后，不易从物体上整张揭下。\n\n[0052]其中，贴合胶材103从阵列基板101的边缘延伸至微型发光二极管102边缘，且贴合胶材103至少部分覆盖在微型发光二极管102远离所述阵列基板的一面。\n\n[0053]请参阅图2，图2为本申请实施例中的封装结构10的另一种结构示意图。其中，贴合胶材103从阵列基板101的边缘延伸至微型发光二极管102边缘，且贴合胶材103完全覆盖微型发光二极管102远离所述阵列基板101的一面。\n\n[0054]本申请实施例提供一种封装结构的制程方法，以下对封装结构制程方法做详细介绍。请参阅图3，图3是本申请实施例中的封装工艺的一种流程示意图。\n\n[0055]201提供一阵列基板，所述阵列基板包括相对设置的第一面和第二面。\n\n[0056]其中，阵列基板可以是薄膜晶体管(Thin Film Transistor，TFT)基板、玻璃基板或柔性基板。第一面可以为阵列基板的上表面，第二面可以为阵列基板的下表面。当然，第一面也可以为阵列基板的下表面，第二面可以为阵列基板的上表面。本申请实施例中不做特殊说明的情况下，默认为第一面为阵列基板的上表面，第二面为阵列基板的下表面。\n\n[0057]202在第一面设置微型发光二极管，且微型发光二极管对应有效显示区。\n\n[0058]其中，微型发光二极管(Mini/Micro-Light-Emitting Diode,Mini/Micro-LED)又可以称为小间距发光二极管。微型发光二极管通过转移及绑定(bonding)工艺被固定在阵列基板上。\n\n[0059]绑定(bonding)是指在制造显示模块过程中，使用各向异性导电粘接剂将各部件互连，然后对齐加压加热形成部件之间稳定可靠的机械、电气连接。根据其过程特点也可称之为热压焊或热压。本申请实施例中，在第一面设置微型发光二极管可以通过bonding工艺，用导电胶将微型发光二极管拼接在阵列基板上，然后热压固定。\n\n[0060]203在第一面和微型发光二极管上设置贴合胶材。\n\n[0061]其中，贴合胶材可以局部贴合有效显示区和阵列基板，如图4所示。具体地，贴合胶材从阵列基板的边缘延伸至微型发光二极管边缘，且贴合胶材至少部分覆盖在微型发光二极管远离阵列基板的一面。\n\n[0062]其中，贴合胶材可以整面贴合有效显示区和阵列基板，如图5所示。具体地，贴合胶材从阵列基板的边缘延伸至微型发光二极管边缘，且贴合胶材完全覆盖微型发光二极管远离阵列基板的一面。\n\n[0063]其中，可以在第一面和微型发光二极管上设置单层贴合胶材，也可以在第一面和微型发光二极管上设置多层贴合胶材。\n\n[0064]204在阵列基板第一面、微型发光二极管以及贴合胶材上覆盖封装胶材。\n\n[0065]205将微型发光二极管对应的有效显示区边缘的封装胶材切割。\n\n[0066]其中，切割以垂直阵列基板第一面的方向沿微型发光二极管所对应有效显示区边缘切割封装胶材。切割方式至少包括刀轮切割，水刀切割，铡刀切割及激光切割中任一种。\n\n[0067]206将第一面的微型发光二极管边缘与阵列基板边缘之间的贴合胶材以及封装胶材去除。\n\n[0068]其中，对于常温易剥离胶材，可以通过简单剥离的方式直接去除；对于紫外光(UV)减黏胶，去除方式为用光罩遮挡微型发光二极管对应的有效显示区，然后用紫外光照射在阵列基板第一面微型发光二极管边缘至阵列基板边缘以降低贴合胶材的黏度，再剥离第一面微型发光二极管边缘至阵列基板边缘的贴合胶材以及封装胶材；对于常温不可剥离胶材，去除方式为将第一面微型发光二极管边缘与阵列基板边缘之间的贴合胶材至少剥离一层，且将第一面微型发光二极管边缘与阵列基板边缘之间的封装胶材剥离。\n\n[0069]本申请提供的封装工艺流程在切割封装胶材的过程中，通过覆盖贴合胶材作为保护胶材以防止切割工艺对阵列基板造成损害；在切割后去除有效显示区以外的贴合胶材及封装胶材的同时也不会对阵列基板造成损害或导致胶材残留。另外，设置贴合胶材还可大大提高封装工艺精度，从而减小微型发光二极管的拼接缝宽。\n\n[0070]请参阅图6，图6是本申请实施例中的封装工艺的另一种流程示意图。\n\n[0071]301提供一阵列基板，所述阵列基板包括相对设置的第一面和第二面。\n\n[0072]302在第一面设置微型发光二极管，且微型发光二极管对应有效显示区。\n\n[0073]303在第一面和微型发光二极管上设置贴合胶材。\n\n[0074]其中，贴合胶材为紫外(UV)减黏胶。\n\n[0075]其中，UV减黏胶可以局部贴合有效显示区和阵列基板，如图7所示。具体地，贴合胶材从阵列基板的边缘延伸至微型发光二极管边缘，且贴合胶材至少部分覆盖在微型发光二极管远离阵列基板的一面。\n\n[0076]其中，UV减黏胶可以整面贴合有效显示区和阵列基板，如图8所示。具体地，贴合胶材从阵列基板的边缘延伸至微型发光二极管边缘，且贴合胶材完全覆盖在微型发光二极管远离阵列基板的一面。\n\n[0077]304在阵列基板第一面、微型发光二极管以及贴合胶材上覆盖封装胶材。\n\n[0078]305将微型发光二极管对应的有效显示区边缘的封装胶材切割。\n\n[0079]306提供一光罩，遮挡微型发光二极管对应的有效显示区；提供紫外光，照射在阵列基板第一面微型发光二极管边缘至阵列基板边缘以降低贴合胶材的黏度，如图7和图8所示。\n\n[0080]307剥离第一面微型发光二极管边缘至阵列基板边缘的贴合胶材以及封装胶材。\n\n[0081]请参阅图9，图9是本申请实施例中的封装工艺的又一种流程示意图。\n\n[0082]401提供一阵列基板，所述阵列基板包括相对设置的第一面和第二面。\n\n[0083]402在阵列基板第一面设置微型发光二极管，且微型发光二极管对应有效显示区。\n\n[0084]403在阵列基板第一面和微型发光二极管上设置多层贴合胶材。\n\n[0085]其中，贴合胶材为不可剥离胶材。\n\n[0086]其中，不可剥离胶材可以局部贴合有效显示区和阵列基板，如图10所示。具体地，贴合胶材从阵列基板的边缘延伸至微型发光二极管边缘，且贴合胶材至少部分覆盖在微型发光二极管远离阵列基板的一面。\n\n[0087]其中，不可剥离胶材可以整面贴合有效显示区和阵列基板，如图11所示。具体地，贴合胶材从阵列基板的边缘延伸至微型发光二极管边缘，且贴合胶材完全覆盖在微型发光二极管远离阵列基板的一面。\n\n[0088]404在阵列基板第一面、微型发光二极管以及贴合胶材上覆盖封装胶材。\n\n[0089]405将微型发光二极管对应的有效显示区边缘的封装胶材切割。\n\n[0090]406将阵列基板第一面上微型发光二极管边缘与阵列基板边缘之间的贴合胶材至少剥离一层，且将阵列基板第一面微型发光二极管边缘与阵列基板边缘之间的封装胶材剥离。\n\n[0091]本申请提供一种显示面板100，图12为本申请实施例中显示面板100的结构示意图。其中，显示面板100包括以上所述的封装结构10和彩膜基板20，显示面板100还可以包括其他装置。本申请实施例中彩膜基板20和其他装置及其装配是本领域技术人员所熟知的相关技术，在此不做过多赘述。\n\n[0092]以上对本申请实施例提供封装结构、封装结构制程方法及显示面板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种封装结构、封装结构制程方法及显示面板。\n\n背景技术\n\n[0002]微型发光二极管(Mini/Micro-Light Emitting Diode,Mini/Micro-LED)显示作为下一代显示技术，凭借其真正实现无缝拼接，优秀的显示效果，色彩还原性强，宽视角，高刷新率，高对比度，高稳定性，低功耗，高灰度等优势，显现出比液晶显示(Liquid CrystalDisplay,LCD)和有机发光二极管(Organic Light Emitting Diode,OLED)显示更优异的性能。从长远来看，随着转移等关键技术的突破，微型发光二极管或将全面进入从小屏到大屏的各类显示领域。\n\n[0003]目前，常用的微型发光二极管显示面板封装工艺主要有点胶和压胶两种，其中点胶方式因受围坝宽度的限制，压胶方式受压胶制具精度及对位精度的限制，均不能实现在有效显示区(Active Area,AA)以内精密封装，同时在工艺过程中，还可能造成有效显示区以外溢胶等问题，而以上问题均会影响着拼接缝宽。为了真正实现无缝拼接，现有的微型发光二极管显示面板仍需大大提高其封装工艺精度。\n\n发明内容\n\n[0004]本申请实施例提供一种封装结构、封装结构制程方法及显示面板，能够减小微型发光二极管拼接缝宽并且提高封装工艺精度。\n\n[0005]本申请提供一种封装结构，包括：\n\n[0006]阵列基板，所述阵列基板包括相对设置的第一面和第二面；\n\n[0007]微型发光二极管，所述微型发光二极管设置在所述第一面且所述微型发光二极管对应有效显示区；\n\n[0008]贴合胶材，所述贴合胶材设置在所述第一面和所述微型发光二极管上；\n\n[0009]封装胶材，所述封装胶材覆盖所述第一面、所述微型发光二极管以及所述贴合胶材。\n\n[0010]在一些实施例中，所述贴合胶材为紫外光敏胶材、聚合物胶材、有机胶材、树脂类胶材、有机硅类胶材其中任一种。\n\n[0011]在一些实施例中，所述贴合胶材从阵列基板的边缘延伸至所述微型发光二极管边缘，且所述贴合胶材至少部分覆盖在所述微型发光二极管远离所述阵列基板的一面。\n\n[0012]在一些实施例中，所述贴合胶材从阵列基板的边缘延伸至所述微型发光二极管边缘，且所述贴合胶材完全覆盖所述微型发光二极管远离所述阵列基板的一面。\n\n[0013]本申请提供一种封装结构的制程方法，包括：\n\n[0014]提供一阵列基板，所述阵列基板包括相对设置的第一面和第二面；\n\n[0015]在所述第一面设置微型发光二极管，且所述微型发光二极管对应有效显示区；\n\n[0016]在所述第一面和所述微型发光二极管上设置贴合胶材；\n\n[0017]在所述第一面、所述微型发光二极管以及所述贴合胶材上覆盖封装胶材；\n\n[0018]将所述微型发光二极管对应的有效显示区边缘的所述封装胶材切割；\n\n[0019]将所述第一面的微型发光二极管边缘与阵列基板边缘之间的所述贴合胶材以及所述封装胶材去除。\n\n[0020]在一些实施例中，将所述微型发光二极管对应的有效显示区边缘的所述封装胶材切割，包括：以垂直所述第一面的方向沿微型发光二极管所对应有效显示区边缘切割所述封装胶材。\n\n[0021]在一些实施例中，将所述第一面的微型发光二极管边缘与阵列基板边缘之间的所述贴合胶材以及所述封装胶材去除，包括：\n\n[0022]提供一光罩，遮挡所述微型发光二极管对应的所述有效显示区；\n\n[0023]提供紫外光，照射在所述第一面微型发光二极管边缘至阵列基板边缘以降低贴合胶材的黏度；\n\n[0024]剥离所述第一面微型发光二极管边缘至阵列基板边缘的所述贴合胶材以及所述封装胶材。\n\n[0025]在一些实施例中，在所述第一面和所述微型发光二极管上设置贴合胶材，包括：在所述第一面和所述微型发光二极管上设置多层贴合胶材。\n\n[0026]在一些实施例中，将所述第一面的微型发光二极管边缘与阵列基板边缘之间的所述贴合胶材以及所述封装胶材去除，包括：\n\n[0027]将所述第一面微型发光二极管边缘与阵列基板边缘之间的贴合胶材至少剥离一层，且将所述第一面微型发光二极管边缘与阵列基板边缘之间的封装胶材剥离。\n\n[0028]本申请提供一种显示面板，包括以上所述的封装结构。\n\n[0029]本申请实施例所提供的封装结构，包括阵列基板、微型发光二极管、贴合胶材和封装胶材。阵列基板包括相对设置的第一面和第二面；微型发光二极管设置在第一面且对应有效显示区；贴合胶材设置在第一面和微型发光二极管上；封装胶材覆盖第一面、微型发光二极管以及贴合胶材。通过覆盖贴合胶材，在切割封装胶材的过程中，贴合胶材可作为保护胶材以防止切割工艺对阵列基板造成损害；另外，设置贴合胶材还可大大提高封装工艺精度。\n\n附图说明\n\n[0030]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0031]图1为本申请实施例提供的封装结构示意图。\n\n[0032]图2为本申请实施例提供的另一个封装结构示意图。\n\n[0033]图3为本申请实施例提供的封装工艺流程图。\n\n[0034]图4为本申请实施例提供的局部贴合封装工艺示意图。\n\n[0035]图5为本申请实施例提供的整面贴合封装工艺示意图。\n\n[0036]图6为本申请实施例提供的另一个封装工艺流程图。\n\n[0037]图7为本申请实施例提供的另一个局部贴合封装工艺示意图。\n\n[0038]图8为本申请实施例提供的另一个整面贴合封装工艺示意图。\n\n[0039]图9为本申请实施例提供的又一个封装工艺流程图。\n\n[0040]图10为本申请实施例提供的又一个局部贴合封装工艺示意图。\n\n[0041]图11为本申请实施例提供的另一个整面贴合封装工艺示意图。\n\n[0042]图12为本申请实施例提供的显示面板结构示意图。\n\n具体实施方式\n\n[0043]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0044]需要说明的是，在本申请的描述中，需要理解的是，术语“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。\n\n[0045]本申请实施例提供一种封装结构10，以下对封装结构10做详细介绍。\n\n[0046]请参阅图1，图1是本申请实施例中的封装结构10的一种结构示意图。其中，封装结构10包括阵列基板101、微型发光二极管102，贴合胶材103以及封装胶材104，阵列基板101具有相对设置的第一面101a和第二面101b，微型发光二极管102设置在第一面101a上，设置微型发光二极管102的区域对应为有效显示区105，贴合胶材103设置在第一面101a和微型发光二极管102上，贴合胶材103用于在封装工艺中的切割过程保护阵列基板101，封装胶材104覆盖阵列基板101、微型发光二极管102以及贴合胶材103。通过覆盖贴合胶材103，在切割封装胶材104的过程中，贴合胶材103可作为保护胶材以防止切割工艺对阵列基板101造成损害；另外，设置贴合胶材103还可大大提高封装工艺精度，从而减小微型发光二极管102的拼接缝宽。\n\n[0047]有效显示区(Active Area,AA)指的是显示屏中显示文字图形的可操作区域。\n\n[0048]需要说明的是，第一面101a可以为阵列基板101的上表面，第二面101b可以为阵列基板101的下表面。当然，第一面101a也可以为阵列基板101的下表面，第二面101b可以为阵列基板101的上表面。本申请实施例中不做特殊说明的情况下，默认为第一面101a为阵列基板101的上表面，第二面101b为阵列基板101的下表面。\n\n[0049]其中，阵列基板101可以是薄膜晶体管(Thin Film Transistor，TFT)基板、玻璃基板或柔性基板中任一种。\n\n[0050]其中，贴合胶材103为紫外光敏胶材、聚合物胶材、有机胶材、树脂类胶材、有机硅类胶材其中任一种；贴合胶材103需要同时具备高透明度和至少能耐150℃高温特性；贴合胶材103类型至少包括紫外光(UV)减粘胶、常温易剥离胶材和不可剥离胶材。\n\n[0051]不可剥离胶材是一种透明耐高温保护涂层，干燥成膜后，不易从物体上整张揭下。\n\n[0052]其中，贴合胶材103从阵列基板101的边缘延伸至微型发光二极管102边缘，且贴合胶材103至少部分覆盖在微型发光二极管102远离所述阵列基板的一面。\n\n[0053]请参阅图2，图2为本申请实施例中的封装结构10的另一种结构示意图。其中，贴合胶材103从阵列基板101的边缘延伸至微型发光二极管102边缘，且贴合胶材103完全覆盖微型发光二极管102远离所述阵列基板101的一面。\n\n[0054]本申请实施例提供一种封装结构的制程方法，以下对封装结构制程方法做详细介绍。请参阅图3，图3是本申请实施例中的封装工艺的一种流程示意图。\n\n[0055]201提供一阵列基板，所述阵列基板包括相对设置的第一面和第二面。\n\n[0056]其中，阵列基板可以是薄膜晶体管(Thin Film Transistor，TFT)基板、玻璃基板或柔性基板。第一面可以为阵列基板的上表面，第二面可以为阵列基板的下表面。当然，第一面也可以为阵列基板的下表面，第二面可以为阵列基板的上表面。本申请实施例中不做特殊说明的情况下，默认为第一面为阵列基板的上表面，第二面为阵列基板的下表面。\n\n[0057]202在第一面设置微型发光二极管，且微型发光二极管对应有效显示区。\n\n[0058]其中，微型发光二极管(Mini/Micro-Light-Emitting Diode,Mini/Micro-LED)又可以称为小间距发光二极管。微型发光二极管通过转移及绑定(bonding)工艺被固定在阵列基板上。\n\n[0059]绑定(bonding)是指在制造显示模块过程中，使用各向异性导电粘接剂将各部件互连，然后对齐加压加热形成部件之间稳定可靠的机械、电气连接。根据其过程特点也可称之为热压焊或热压。本申请实施例中，在第一面设置微型发光二极管可以通过bonding工艺，用导电胶将微型发光二极管拼接在阵列基板上，然后热压固定。\n\n[0060]203在第一面和微型发光二极管上设置贴合胶材。\n\n[0061]其中，贴合胶材可以局部贴合有效显示区和阵列基板，如图4所示。具体地，贴合胶材从阵列基板的边缘延伸至微型发光二极管边缘，且贴合胶材至少部分覆盖在微型发光二极管远离阵列基板的一面。\n\n[0062]其中，贴合胶材可以整面贴合有效显示区和阵列基板，如图5所示。具体地，贴合胶材从阵列基板的边缘延伸至微型发光二极管边缘，且贴合胶材完全覆盖微型发光二极管远离阵列基板的一面。\n\n[0063]其中，可以在第一面和微型发光二极管上设置单层贴合胶材，也可以在第一面和微型发光二极管上设置多层贴合胶材。\n\n[0064]204在阵列基板第一面、微型发光二极管以及贴合胶材上覆盖封装胶材。\n\n[0065]205将微型发光二极管对应的有效显示区边缘的封装胶材切割。\n\n[0066]其中，切割以垂直阵列基板第一面的方向沿微型发光二极管所对应有效显示区边缘切割封装胶材。切割方式至少包括刀轮切割，水刀切割，铡刀切割及激光切割中任一种。\n\n[0067]206将第一面的微型发光二极管边缘与阵列基板边缘之间的贴合胶材以及封装胶材去除。\n\n[0068]其中，对于常温易剥离胶材，可以通过简单剥离的方式直接去除；对于紫外光(UV)减黏胶，去除方式为用光罩遮挡微型发光二极管对应的有效显示区，然后用紫外光照射在阵列基板第一面微型发光二极管边缘至阵列基板边缘以降低贴合胶材的黏度，再剥离第一面微型发光二极管边缘至阵列基板边缘的贴合胶材以及封装胶材；对于常温不可剥离胶材，去除方式为将第一面微型发光二极管边缘与阵列基板边缘之间的贴合胶材至少剥离一层，且将第一面微型发光二极管边缘与阵列基板边缘之间的封装胶材剥离。\n\n[0069]本申请提供的封装工艺流程在切割封装胶材的过程中，通过覆盖贴合胶材作为保护胶材以防止切割工艺对阵列基板造成损害；在切割后去除有效显示区以外的贴合胶材及封装胶材的同时也不会对阵列基板造成损害或导致胶材残留。另外，设置贴合胶材还可大大提高封装工艺精度，从而减小微型发光二极管的拼接缝宽。\n\n[0070]请参阅图6，图6是本申请实施例中的封装工艺的另一种流程示意图。\n\n[0071]301提供一阵列基板，所述阵列基板包括相对设置的第一面和第二面。\n\n[0072]302在第一面设置微型发光二极管，且微型发光二极管对应有效显示区。\n\n[0073]303在第一面和微型发光二极管上设置贴合胶材。\n\n[0074]其中，贴合胶材为紫外(UV)减黏胶。\n\n[0075]其中，UV减黏胶可以局部贴合有效显示区和阵列基板，如图7所示。具体地，贴合胶材从阵列基板的边缘延伸至微型发光二极管边缘，且贴合胶材至少部分覆盖在微型发光二极管远离阵列基板的一面。\n\n[0076]其中，UV减黏胶可以整面贴合有效显示区和阵列基板，如图8所示。具体地，贴合胶材从阵列基板的边缘延伸至微型发光二极管边缘，且贴合胶材完全覆盖在微型发光二极管远离阵列基板的一面。\n\n[0077]304在阵列基板第一面、微型发光二极管以及贴合胶材上覆盖封装胶材。\n\n[0078]305将微型发光二极管对应的有效显示区边缘的封装胶材切割。\n\n[0079]306提供一光罩，遮挡微型发光二极管对应的有效显示区；提供紫外光，照射在阵列基板第一面微型发光二极管边缘至阵列基板边缘以降低贴合胶材的黏度，如图7和图8所示。\n\n[0080]307剥离第一面微型发光二极管边缘至阵列基板边缘的贴合胶材以及封装胶材。\n\n[0081]请参阅图9，图9是本申请实施例中的封装工艺的又一种流程示意图。\n\n[0082]401提供一阵列基板，所述阵列基板包括相对设置的第一面和第二面。\n\n[0083]402在阵列基板第一面设置微型发光二极管，且微型发光二极管对应有效显示区。\n\n[0084]403在阵列基板第一面和微型发光二极管上设置多层贴合胶材。\n\n[0085]其中，贴合胶材为不可剥离胶材。\n\n[0086]其中，不可剥离胶材可以局部贴合有效显示区和阵列基板，如图10所示。具体地，贴合胶材从阵列基板的边缘延伸至微型发光二极管边缘，且贴合胶材至少部分覆盖在微型发光二极管远离阵列基板的一面。\n\n[0087]其中，不可剥离胶材可以整面贴合有效显示区和阵列基板，如图11所示。具体地，贴合胶材从阵列基板的边缘延伸至微型发光二极管边缘，且贴合胶材完全覆盖在微型发光二极管远离阵列基板的一面。\n\n[0088]404在阵列基板第一面、微型发光二极管以及贴合胶材上覆盖封装胶材。\n\n[0089]405将微型发光二极管对应的有效显示区边缘的封装胶材切割。\n\n[0090]406将阵列基板第一面上微型发光二极管边缘与阵列基板边缘之间的贴合胶材至少剥离一层，且将阵列基板第一面微型发光二极管边缘与阵列基板边缘之间的封装胶材剥离。\n\n[0091]本申请提供一种显示面板100，图12为本申请实施例中显示面板100的结构示意图。其中，显示面板100包括以上所述的封装结构10和彩膜基板20，显示面板100还可以包括其他装置。本申请实施例中彩膜基板20和其他装置及其装配是本领域技术人员所熟知的相关技术，在此不做过多赘述。\n\n[0092]以上对本申请实施例提供封装结构、封装结构制程方法及显示面板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10720, 23774, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种背光结构及显示装置。\n\n背景技术\n\n[0002]光学屏下指纹识别技术目前成为市场追逐的热点，(Liquid Crystal Display)液晶显示屏由于较低的穿透率，液晶光阀的调光作用和较为复杂的叠层架构，在显示区进行光学指纹光路设计和传感器排布具有较大的难度。目前市面上暂未推出合理的可商业化的LCD屏下指纹的识别技术。屏下光学指纹识别技术作为后续人工智能与显示技术结合的前期预研技术，被众多厂商看好。如何设计合理的LCD屏下光学指纹光路和机构，成为该技术成败的关键。\n\n[0003]因此，现需要提出一种背光结构及显示装置，用以在摄像头区域实现指纹识别。\n\n发明内容\n\n[0004]为了解决上述技术问题，本发明提供一种背光结构及显示装置，通过在背光结构的透光孔的周围设置MiniLed发光单元，并且在 MiniLed发光单元之间设置指纹感光芯片，从而能够在透光孔周围实现指纹识别。\n\n[0005]本发明提供提供一种背光结构，包括：一透光孔；MiniLed基板，围绕所述透光孔设置，所述MiniLed基板上设置多个MiniLed发光单元，相邻的MiniLed发光单元之间设有一感光芯片；导光板，围绕所述MiniLed基板而设；\n\n[0006]封装层，设于所述MiniLed基板、所述MiniLed发光单元以及所述指纹感光芯片上；以及一背光源。\n\n[0007]进一步地，还包括：导光环，设于所述MiniLed基板与所述透光孔之间且围绕所述透光孔。\n\n[0008]进一步地，所述MiniLed发光单元包括红色发光单元、绿色发光单元以及蓝色发光单元。\n\n[0009]进一步地，还包括：反射片，与所述MiniLed基板设于同一层，所述导光板设于所述反射片上；扩散片，设于所述导光板上；下棱镜膜，设于所述扩散片上；上棱镜膜，设于所述下棱镜膜上。\n\n[0010]进一步地，所述背光源包括侧入式背光源或直下式背光源。\n\n[0011]进一步地，所述MiniLed基板包括：金属层；至少三层混合层，设于所述金属层一侧，所述混合层包括金属线、以及基材；所述基材设于所述金属线的一侧；白油墨，设于所述混合层远离所述金属层的一侧。\n\n[0012]进一步地，还包括：挡板，设于所述MiniLed基板与所述导光板之间，且垂直于所述导光板。\n\n[0013]本发明还提供一种显示装置，包括前文所述的背光结构。\n\n[0014]进一步地，所述显示装置还包括：摄像头，设于所述背光结构下方且对应所述透光孔；液晶盒，设于所述背光结构上方。\n\n[0015]进一步地，对应所述摄像头的液晶盒包括聚合物分散液晶盒或聚合物网状液晶盒。\n\n[0016]本发明的有益效果是：本发明提供一种背光结构及显示装置，通过在背光结构透光孔的周围设置MiniLed发光单元，并且在 MiniLed发光单元之间设置指纹感光芯片，从而能够在透光孔周围实现指纹识别。本发明提供的显示装置，需要开启显示功能时，异形区利用MiniLed发光单元作为背光源，加之上方液晶盒调光和透光孔上方聚光导光环可实现异形区域的简单画面显示。需要开启拍照功能时，MiniLed发光单元关闭，液晶盒呈透明态使摄像头进光拍照。需要开启指纹解锁功能时，上方液晶盒呈透明态，根据指纹感光芯片可识别的可见光波段(红光、绿光或蓝光)开启相应的单色MiniLed (红色发光单元、绿色发光单元以及蓝色发光单元)，解锁成功后单色MiniLed关闭并正常开启异形区显示功能。\n\n附图说明\n\n[0017]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0018]下面结合附图和实施例对本发明作进一步的描述。\n\n[0019]图1为本发明提供的部分背光结构的结构示意图；\n\n[0020]图2为本发明提供的凹槽屏的平面图；\n\n[0021]图3为本发明提供的水滴屏的平面图；\n\n[0022]图4为本发明提供的MiniLed基板的结构示意图；\n\n[0023]图5为本发明提供的显示装置的结构示意图。\n\n[0024]上述附图中附图标记为：\n\n[0025]背光结构100；显示装置200；\n\n[0026]透光孔101；MiniLed基板102；导光环103；\n\n[0027]导光板104；封装层106；背光源105；\n\n[0028]MiniLed发光单元107；指纹感光芯片108；\n\n[0029]反射片109；扩散片1010；下棱镜膜1011；\n\n[0030]上棱镜膜1012；挡板1013；液晶盒201；\n\n[0031]摄像头202。\n\n具体实施方式\n\n[0032]以下各实施例的说明是参考附加的图式，用以例示本发明可以用实施的特定实施例。本发明所提到的方向用语，例如上、下、前、后、左、右、内、外、侧等，仅是参考附图式的方向。本发明提到的元件名称，例如第一、第二等，仅是区分不同的元部件，可以更好的表达。在图中，结构相似的单元以相同标号表示。\n\n[0033]本文将参照附图来详细描述本发明的实施例。本发明可以表现为许多不同形式，本发明不应仅被解释为本文阐述的具体实施例。本发明提供这些实施例是为了解释本发明的实际应用，从而使本领域其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改方案。\n\n[0034]如图1所示，本发明提供一种背光结构100，包括：透光孔101、 MiniLed基板102、导光环103、导光板104、封装层106以及背光源105。\n\n[0035]所述透光孔101用以使外界的光线透过，方便透光孔101下的传感器模块进行外界光线的采集。\n\n[0036]所述透光孔101设于面板的异形区，即现市场流行的凹槽屏 (图2中的标记110)以及水滴屏(图3中的标记120)。\n\n[0037]所述MiniLed基板102围绕所述透光孔101设置，所述MiniLed 基板102上设置多个MiniLed发光单元107，相邻的MiniLed发光单元107之间设有一指纹感光芯片108。\n\n[0038]所述MiniLed发光单元107包括红色发光单元、绿色发光单元以及蓝色发光单元。相邻的MiniLed发光单元107之间的间距为 2-4毫米。\n\n[0039]所述指纹感光芯片108数量为1-100个，指纹感光芯片108可在可见光区域内任意选择感光波段，MiniLed发光单元107和指纹感光芯片108上方通过透明保护胶进行封胶形成封装层106，以保证芯片工作的稳定性。\n\n[0040]制作工艺上，先在MiniLed基板102上采用表面贴装技术 (SMT)工艺完成指纹感光芯片108的打件，再利用固晶工艺在基板上完成MiniLed发光单元107的打件，回流焊之后进行封胶工艺。\n\n[0041]如图4所示，所述MiniLed基板102包括：金属层1021、混合层1029以及白油墨1028。\n\n[0042]所述金属层1021优选为铜。\n\n[0043]所述混合层1029设于所述金属层1021一侧，所述混合层1029 包括金属线1023以及基材1022，所述金属线1023设于所述基材 1022上，所述金属线1023优选为金属铜，所述基材1022的材料包括玻璃纤维环氧树脂覆铜板、聚酰亚胺以及树脂。\n\n[0044]所述白油墨1028设于所述混合层远离所述金属层的一侧。\n\n[0045]所述混合层1029的数量至少为3层，这是为了独立控制三种颜色的MiniLed发光单元107发光，本发明优选为5层。\n\n[0046]具体地讲，5层混合层1029依次堆叠在所述金属层1021上，每层混合层1029都具有金属线，分别为金属线1023，第一金属线 1024，第二金属线1025，第三金属线1026，第四金属线1027，相邻之间通过基材相互绝缘。\n\n[0047]第四金属线1027为背光源105的焊接走线，第三金属线1026 为正面指纹感光芯片108焊接走线，第二金属线1025、第一金属线1024及金属线1023分别为红色发光单元、绿色发光单元以及蓝色发光单元的背面走线。由于不同颜色的MiniLed发光单元107需要独立控制发光，需要至少采用3层铜线进行布线。金属层1021 为指纹感光芯片108背面布线，使指纹感光芯片108可实现正常感光功能。\n\n[0048]所述指纹感光芯片108可以接受指纹，进而可以实现指纹识别，本发明将指纹感光芯片108设于透光孔101周围(异形区)，既可以实现摄像也可以实现指纹识别。\n\n[0049]并且由于异形区的设置的透光孔101，异形区域模组穿透率较高，结构设计简单，易达成较高的指纹解锁效果。\n\n[0050]所述封装层106设于所述MiniLed基板102、MiniLed发光单元107以及指纹感光芯片108上。\n\n[0051]所述导光板104围绕所述MiniLed基板102且设置，主要设置在显示区。\n\n[0052]所述背光源105包括侧入式背光源或直下式背光源。本发明优选为侧入式背光源，在其他实施例当中还可以是直下式背光源。\n\n[0053]所述背光源105设于所述导光板104的侧边，用以给显示区的面板提供光线。\n\n[0054]所述导光环103设于所述MiniLed基板102与所述透光孔101 之间且围绕所述透光孔101。所述导光环103可实现透光孔101上方位置的均匀出光。\n\n[0055]所述背光结构100还包括：反射片109、扩散片1010、下棱镜膜1011、上棱镜膜1012以及挡板1013。\n\n[0056]所述反射片109与所述MiniLed基板102设于同一层，所述导光板104设于所述反射片109上，所述反射片109用以将背光源 105的管光线反射至所述导光板104。\n\n[0057]所述扩散片1010设于所述导光板104上；所述下棱镜膜1011 设于所述扩散片1010上；所述上棱镜膜1012设于所述下棱镜膜 1011上。\n\n[0058]扩散片1010、下棱镜膜1011、上棱镜膜1012用以将光线均匀的散射至显示区。\n\n[0059]所述挡板1013设于所述MiniLed基板102与所述导光板104 之间且与垂直于所述导光板104。所述挡板1013用以将异形区的 MiniLed背光与显示区的背光区分，防止相互影响。\n\n[0060]本发明还一种显示装置200，包括所述的背光结构100、摄像头202以及液晶盒201。\n\n[0061]所述摄像头202设于所述背光结构100下且对应所述透光孔 101。所述液晶盒201设于所述背光结构100上。\n\n[0062]对应所述摄像头202的液晶盒包括聚合物分散液晶盒或聚合物网状液晶盒，其他区域为普通液晶盒。通过控制电压可实现液晶盒201在雾态和透明态之间转变，进而实现显示和拍照功能的切换。\n\n[0063]在不加电时，液晶分子和聚合物分子在光矢方向折射率相同，液晶盒201呈透明态；加电时，液晶分子和聚合物分子在光矢方向折射率不同，呈散射态。\n\n[0064]如图5所示，本发明提供的显示装置200，需要开启显示功能时，异形区利用MiniLed发光单元107作为背光源105，加之上方 PDLC/PNLC液晶盒201调光和透光孔101上方聚光导光环103可实现异形区域的简单画面显示。需要开启拍照功能时，MiniLed发光单元107关闭，液晶盒201呈透明态使摄像头202进光拍照。需要开启指纹解锁功能时，上方液晶盒201呈透明态，根据感光芯片可识别的可见光波段(红光、绿光或蓝光)开启相应的单色MiniLed (红色发光单元、绿色发光单元以及蓝色发光单元)，并将MiniLed 亮度调制10000nits以上，以保证有限数量的感光芯片接收到足够的的手指反射光，解锁成功后单色MiniLed关闭并正常开启异形区显示功能。\n\n[0065]应当指出，对于经充分说明的本发明来说，还可具有多种变换及改型的实施方案，并不局限于上述实施方式的具体实施例。上述实施例仅仅作为本发明的说明，而不是对发明的限制。总之，本发明的保护范围应包括那些对于本领域普通技术人员来说显而易见的变换或替代以及改型。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种背光结构及显示装置。\n\n背景技术\n\n[0002]光学屏下指纹识别技术目前成为市场追逐的热点，(Liquid Crystal Display)液晶显示屏由于较低的穿透率，液晶光阀的调光作用和较为复杂的叠层架构，在显示区进行光学指纹光路设计和传感器排布具有较大的难度。目前市面上暂未推出合理的可商业化的LCD屏下指纹的识别技术。屏下光学指纹识别技术作为后续人工智能与显示技术结合的前期预研技术，被众多厂商看好。如何设计合理的LCD屏下光学指纹光路和机构，成为该技术成败的关键。\n\n[0003]因此，现需要提出一种背光结构及显示装置，用以在摄像头区域实现指纹识别。\n\n发明内容\n\n[0004]为了解决上述技术问题，本发明提供一种背光结构及显示装置，通过在背光结构的透光孔的周围设置MiniLed发光单元，并且在 MiniLed发光单元之间设置指纹感光芯片，从而能够在透光孔周围实现指纹识别。\n\n[0005]本发明提供提供一种背光结构，包括：一透光孔；MiniLed基板，围绕所述透光孔设置，所述MiniLed基板上设置多个MiniLed发光单元，相邻的MiniLed发光单元之间设有一感光芯片；导光板，围绕所述MiniLed基板而设；\n\n[0006]封装层，设于所述MiniLed基板、所述MiniLed发光单元以及所述指纹感光芯片上；以及一背光源。\n\n[0007]进一步地，还包括：导光环，设于所述MiniLed基板与所述透光孔之间且围绕所述透光孔。\n\n[0008]进一步地，所述MiniLed发光单元包括红色发光单元、绿色发光单元以及蓝色发光单元。\n\n[0009]进一步地，还包括：反射片，与所述MiniLed基板设于同一层，所述导光板设于所述反射片上；扩散片，设于所述导光板上；下棱镜膜，设于所述扩散片上；上棱镜膜，设于所述下棱镜膜上。\n\n[0010]进一步地，所述背光源包括侧入式背光源或直下式背光源。\n\n[0011]进一步地，所述MiniLed基板包括：金属层；至少三层混合层，设于所述金属层一侧，所述混合层包括金属线、以及基材；所述基材设于所述金属线的一侧；白油墨，设于所述混合层远离所述金属层的一侧。\n\n[0012]进一步地，还包括：挡板，设于所述MiniLed基板与所述导光板之间，且垂直于所述导光板。\n\n[0013]本发明还提供一种显示装置，包括前文所述的背光结构。\n\n[0014]进一步地，所述显示装置还包括：摄像头，设于所述背光结构下方且对应所述透光孔；液晶盒，设于所述背光结构上方。\n\n[0015]进一步地，对应所述摄像头的液晶盒包括聚合物分散液晶盒或聚合物网状液晶盒。\n\n[0016]本发明的有益效果是：本发明提供一种背光结构及显示装置，通过在背光结构透光孔的周围设置MiniLed发光单元，并且在 MiniLed发光单元之间设置指纹感光芯片，从而能够在透光孔周围实现指纹识别。本发明提供的显示装置，需要开启显示功能时，异形区利用MiniLed发光单元作为背光源，加之上方液晶盒调光和透光孔上方聚光导光环可实现异形区域的简单画面显示。需要开启拍照功能时，MiniLed发光单元关闭，液晶盒呈透明态使摄像头进光拍照。需要开启指纹解锁功能时，上方液晶盒呈透明态，根据指纹感光芯片可识别的可见光波段(红光、绿光或蓝光)开启相应的单色MiniLed (红色发光单元、绿色发光单元以及蓝色发光单元)，解锁成功后单色MiniLed关闭并正常开启异形区显示功能。\n\n附图说明\n\n[0017]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0018]下面结合附图和实施例对本发明作进一步的描述。\n\n[0019]图1为本发明提供的部分背光结构的结构示意图；\n\n[0020]图2为本发明提供的凹槽屏的平面图；\n\n[0021]图3为本发明提供的水滴屏的平面图；\n\n[0022]图4为本发明提供的MiniLed基板的结构示意图；\n\n[0023]图5为本发明提供的显示装置的结构示意图。\n\n[0024]上述附图中附图标记为：\n\n[0025]背光结构100；显示装置200；\n\n[0026]透光孔101；MiniLed基板102；导光环103；\n\n[0027]导光板104；封装层106；背光源105；\n\n[0028]MiniLed发光单元107；指纹感光芯片108；\n\n[0029]反射片109；扩散片1010；下棱镜膜1011；\n\n[0030]上棱镜膜1012；挡板1013；液晶盒201；\n\n[0031]摄像头202。\n\n具体实施方式\n\n[0032]以下各实施例的说明是参考附加的图式，用以例示本发明可以用实施的特定实施例。本发明所提到的方向用语，例如上、下、前、后、左、右、内、外、侧等，仅是参考附图式的方向。本发明提到的元件名称，例如第一、第二等，仅是区分不同的元部件，可以更好的表达。在图中，结构相似的单元以相同标号表示。\n\n[0033]本文将参照附图来详细描述本发明的实施例。本发明可以表现为许多不同形式，本发明不应仅被解释为本文阐述的具体实施例。本发明提供这些实施例是为了解释本发明的实际应用，从而使本领域其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改方案。\n\n[0034]如图1所示，本发明提供一种背光结构100，包括：透光孔101、 MiniLed基板102、导光环103、导光板104、封装层106以及背光源105。\n\n[0035]所述透光孔101用以使外界的光线透过，方便透光孔101下的传感器模块进行外界光线的采集。\n\n[0036]所述透光孔101设于面板的异形区，即现市场流行的凹槽屏 (图2中的标记110)以及水滴屏(图3中的标记120)。\n\n[0037]所述MiniLed基板102围绕所述透光孔101设置，所述MiniLed 基板102上设置多个MiniLed发光单元107，相邻的MiniLed发光单元107之间设有一指纹感光芯片108。\n\n[0038]所述MiniLed发光单元107包括红色发光单元、绿色发光单元以及蓝色发光单元。相邻的MiniLed发光单元107之间的间距为 2-4毫米。\n\n[0039]所述指纹感光芯片108数量为1-100个，指纹感光芯片108可在可见光区域内任意选择感光波段，MiniLed发光单元107和指纹感光芯片108上方通过透明保护胶进行封胶形成封装层106，以保证芯片工作的稳定性。\n\n[0040]制作工艺上，先在MiniLed基板102上采用表面贴装技术 (SMT)工艺完成指纹感光芯片108的打件，再利用固晶工艺在基板上完成MiniLed发光单元107的打件，回流焊之后进行封胶工艺。\n\n[0041]如图4所示，所述MiniLed基板102包括：金属层1021、混合层1029以及白油墨1028。\n\n[0042]所述金属层1021优选为铜。\n\n[0043]所述混合层1029设于所述金属层1021一侧，所述混合层1029 包括金属线1023以及基材1022，所述金属线1023设于所述基材 1022上，所述金属线1023优选为金属铜，所述基材1022的材料包括玻璃纤维环氧树脂覆铜板、聚酰亚胺以及树脂。\n\n[0044]所述白油墨1028设于所述混合层远离所述金属层的一侧。\n\n[0045]所述混合层1029的数量至少为3层，这是为了独立控制三种颜色的MiniLed发光单元107发光，本发明优选为5层。\n\n[0046]具体地讲，5层混合层1029依次堆叠在所述金属层1021上，每层混合层1029都具有金属线，分别为金属线1023，第一金属线 1024，第二金属线1025，第三金属线1026，第四金属线1027，相邻之间通过基材相互绝缘。\n\n[0047]第四金属线1027为背光源105的焊接走线，第三金属线1026 为正面指纹感光芯片108焊接走线，第二金属线1025、第一金属线1024及金属线1023分别为红色发光单元、绿色发光单元以及蓝色发光单元的背面走线。由于不同颜色的MiniLed发光单元107需要独立控制发光，需要至少采用3层铜线进行布线。金属层1021 为指纹感光芯片108背面布线，使指纹感光芯片108可实现正常感光功能。\n\n[0048]所述指纹感光芯片108可以接受指纹，进而可以实现指纹识别，本发明将指纹感光芯片108设于透光孔101周围(异形区)，既可以实现摄像也可以实现指纹识别。\n\n[0049]并且由于异形区的设置的透光孔101，异形区域模组穿透率较高，结构设计简单，易达成较高的指纹解锁效果。\n\n[0050]所述封装层106设于所述MiniLed基板102、MiniLed发光单元107以及指纹感光芯片108上。\n\n[0051]所述导光板104围绕所述MiniLed基板102且设置，主要设置在显示区。\n\n[0052]所述背光源105包括侧入式背光源或直下式背光源。本发明优选为侧入式背光源，在其他实施例当中还可以是直下式背光源。\n\n[0053]所述背光源105设于所述导光板104的侧边，用以给显示区的面板提供光线。\n\n[0054]所述导光环103设于所述MiniLed基板102与所述透光孔101 之间且围绕所述透光孔101。所述导光环103可实现透光孔101上方位置的均匀出光。\n\n[0055]所述背光结构100还包括：反射片109、扩散片1010、下棱镜膜1011、上棱镜膜1012以及挡板1013。\n\n[0056]所述反射片109与所述MiniLed基板102设于同一层，所述导光板104设于所述反射片109上，所述反射片109用以将背光源 105的管光线反射至所述导光板104。\n\n[0057]所述扩散片1010设于所述导光板104上；所述下棱镜膜1011 设于所述扩散片1010上；所述上棱镜膜1012设于所述下棱镜膜 1011上。\n\n[0058]扩散片1010、下棱镜膜1011、上棱镜膜1012用以将光线均匀的散射至显示区。\n\n[0059]所述挡板1013设于所述MiniLed基板102与所述导光板104 之间且与垂直于所述导光板104。所述挡板1013用以将异形区的 MiniLed背光与显示区的背光区分，防止相互影响。\n\n[0060]本发明还一种显示装置200，包括所述的背光结构100、摄像头202以及液晶盒201。\n\n[0061]所述摄像头202设于所述背光结构100下且对应所述透光孔 101。所述液晶盒201设于所述背光结构100上。\n\n[0062]对应所述摄像头202的液晶盒包括聚合物分散液晶盒或聚合物网状液晶盒，其他区域为普通液晶盒。通过控制电压可实现液晶盒201在雾态和透明态之间转变，进而实现显示和拍照功能的切换。\n\n[0063]在不加电时，液晶分子和聚合物分子在光矢方向折射率相同，液晶盒201呈透明态；加电时，液晶分子和聚合物分子在光矢方向折射率不同，呈散射态。\n\n[0064]如图5所示，本发明提供的显示装置200，需要开启显示功能时，异形区利用MiniLed发光单元107作为背光源105，加之上方 PDLC/PNLC液晶盒201调光和透光孔101上方聚光导光环103可实现异形区域的简单画面显示。需要开启拍照功能时，MiniLed发光单元107关闭，液晶盒201呈透明态使摄像头202进光拍照。需要开启指纹解锁功能时，上方液晶盒201呈透明态，根据感光芯片可识别的可见光波段(红光、绿光或蓝光)开启相应的单色MiniLed (红色发光单元、绿色发光单元以及蓝色发光单元)，并将MiniLed 亮度调制10000nits以上，以保证有限数量的感光芯片接收到足够的的手指反射光，解锁成功后单色MiniLed关闭并正常开启异形区显示功能。\n\n[0065]应当指出，对于经充分说明的本发明来说，还可具有多种变换及改型的实施方案，并不局限于上述实施方式的具体实施例。上述实施例仅仅作为本发明的说明，而不是对发明的限制。总之，本发明的保护范围应包括那些对于本领域普通技术人员来说显而易见的变换或替代以及改型。');
INSERT INTO `os_patent_instruction_text` VALUES (10721, 23775, '技术领域\n\n[0001]本发明涉及指纹识别技术领域，尤其涉及一种屏下指纹识别装置、显示面板及显示装置。\n\n背景技术\n\n[0002]随着电子技术的发展，电子设备的显示屏逐渐向全面屏发展，越来越高的屏占比，这使得目前主流的电容式指纹模组无处放置。于是，屏下光学指纹应运而生。\n\n[0003]电子产品整体工艺设计能力提升、消费者审美观也在不断的被引导、被提升，因此手机屏幕由之前多元化的设计，整体趋势逐渐转换成全面屏设计方向，覆晶薄膜、超窄边框等显示屏中全面屏相关指标的设计能力、工艺能力在不到一年的时间内不断的提升，屏占比也由80％逐渐提升到了97％。而其中屏下指纹识别的研究尤其热门，它直接将指纹模组集成到屏下，以大大提高屏占比。\n\n[0004]目前，对于有机发光二极管(Organic Light-Emitting Diode，简称OLED)显示屏而言，屏下光学指纹识别方案的应用已经越来越多。OLED显示屏的屏下光学指纹方案是指通过利用OLED显示屏本身的透光性以及屏幕自身的光来照射手指，进而检测指纹。\n\n[0005]对于液晶显示器(Liquid Crystal Display，简称LCD)而言，LCD的背光模组透光性能比较差，屏下指纹识别虽然也有多种方案，例如，包括小孔、准直等。但是，液晶显示器由于背光的原因，使得在其内部实施小孔方案比较困难，这主要的原因是在于：经用户手指反射回来的光线会同时通过小孔和像素对应的开口区而传递至图像传感器装置上，而且在一般情况下，像素对应的开口区的面积比小孔的面积大得多，因此，容易覆盖小孔成像的信号，进而导致图像传感器装置难以成像。\n\n[0006]有鉴于此，亟需提供一种新的屏下指纹识别装置以解决上述问题。\n\n发明内容\n\n[0007]为了解决上述问题，本发明实施例提供了一种屏下指纹识别装置，能够有效解决光线通过像素开口区覆盖小孔成像的信号所导致图像传感器难以成像的问题。\n\n[0008]本发明实施例提供了一种屏下指纹识别装置，适用于显示面板，所述屏下指纹识别装置包括：光源，所述光源设置在显示面板的一侧；多个图像传感器，所述多个图像传感器设置在所述显示面板的彩膜层内；以及小孔层，所述小孔层设置在所述显示面板的所述彩膜层的上方；所述小孔层包括多个间隔设置的控光膜和小孔区；每一所述控光膜位于与所述彩膜层的每一像素的相对应位置；每一所述小孔区包括一小孔，每一所述小孔与每一所述图像传感器相对应位置。\n\n[0009]进一步地，所述光源为mini-LED或Micro-LED。\n\n[0010]进一步地，所述光源产生的光为不可见光。\n\n[0011]进一步地，所述不可见光为红外光。\n\n[0012]进一步的，所述光源的走线为复用所述显示面板的触控信号走线。\n\n[0013]进一步地，所述控光膜仅允许通过可见光。\n\n[0014]进一步地，所述小孔的孔径范围为5um至50um。\n\n[0015]本发明实施例还提供了一种显示面板，所述显示面板包括上述任一所述的屏下指纹识别装置。\n\n[0016]本发明实施例还提供了一种显示装置，所述显示装置包括上述显示面板。\n\n[0017]本发明的优点在于，本发明通过在像素开口区加入控光膜，用以区分指纹识别光线和正常显示光线，并且将图像传感器设置为仅识别不可见光源，如此设计使得不可见光只能通过设置于小孔层内的小孔传递至所述图像传感器，从而提高指纹识别信号的信噪比。\n\n附图说明\n\n[0018]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0019]图1为发明实施例提供的一种屏下指纹识别装置的结构示意图。\n\n[0020]图2为本明实施例提供的屏下指纹识别装置的俯视结构示意图。\n\n[0021]图3为本发明实施例提供的一种显示面板结构示意图。\n\n[0022]图4为本发明实施例提供的一种显示装置结构示意图。\n\n具体实施方式\n\n[0023]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例，基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0024]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。\n\n[0025]此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量，由此限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征，在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0026]如图1所示，为本发明实施例提供的一种屏下指纹识别装置的结构示意图，其适用于一显示面板，所述屏下指纹识别装置包括：光源4、多个图像传感器10、小孔层2。其中，如图3所示的显示面板包括彩膜层1和导光层3。\n\n[0027]结合参阅图2，所述光源4设置在显示面板的一侧，所述多个图像传感器10设置在所述显示面板30的彩膜层1内，所述小孔层2设置在所述显示面板的所述彩膜层1的上方，所述小孔层2包括多个间隔设置的控光膜5和小孔区12，每一所述控光膜5位于与所述彩膜层1的每一像素9的相对应位置，每一所述小孔区12包括一小孔6，每一所述小孔6位于与每一所述图像传感器10相对应位置。\n\n[0028]所述彩膜层1中包括像素9和多个图像传感器10。\n\n[0029]在本发明的一个实施例中，像素9的排列方式为菱形排列方式，其每一个像素单元中可以包括两个红色子像素、蓝色子像素、绿色子像素。但不限于此，在其他部分实施例中，像素9也可以为其他的排列方式。例如，将RGB的三原色按照1:1:1的方式排列。\n\n[0030]其中所述图像传感器10是利用光电器件的光电转换功能，将感光面上的光像转换为与光像成相应比例关系的电信号。与光敏二极管，光敏三极管等“点”光源的光敏元件相比，图像传感器是将其受光面上的光像，分成许多小单元，将其转换成可用的电信号的一种功能器件。在本发明实施例中每一所述图像传感器10仅能识别不可见光源。\n\n[0031]所述光源4所产生的光为不可见光，不可见光穿过小孔6能够被所述图像传感器10识别，用以完成指纹识别的功能。本发明实施例中不可见光采用红外光，但不限于此，不可见光是指人类肉眼看不到的光，其中主还包括紫外光、远红外光等。一般人的眼睛可以感知的电磁波的波长在400到700纳米之间。\n\n[0032]所述光源为小型有机发光二极管(简称mini-LED)或微型有机发光二极管(简称Micro-LED)，其中mini-LED尺寸约为100微米的LED，mini-LED的优点容易实现批量生产，而Micro-LED尺寸为1微米至100微米，Micro-LED的优点为高效率，高亮度，高可靠性，响应时间短。\n\n[0033]所述光源4的走线为复用显示面板的触控走线，该触控走线为双绞线。由于在指纹识别时，双绞线信号线未开始正常工作，因此可以作为所述光源的走线。但不限于此，在不影响显示面板正常工作的前提下，在其他部分实施例中也可以复用其他走线，从而节省空间和成本。\n\n[0034]所述小孔层2包括多个小孔6和多个控光膜5，所述小孔6的孔径为5um至50um。在本发明实施例中，所使用的小孔6的孔径为10um。\n\n[0035]其中所述小孔6用于通过所述光源4产生的不可见光，所述控光膜5用于通过彩膜层1产生正常的可见光8，反射所述光源4产生的不可见光，如此设计使得不可见光只能通过所述小孔6传递至所述图像传感器10，从而提高指纹识别信号的信噪比。\n\n[0036]本发明的优点在于，本发明通过在像素开口区加入控光膜，用以区分指纹识别光线和正常的显示光线，并且将图像传感器设置为仅能识别不可见光源，如此设计使得不可见光只能通过设置于小孔层内的小孔传递至所述图像传感器，从而提高指纹识别信号的信噪比。\n\n[0037]如图3所示，本发明实施例提供的显示面板30结构示意图，所述显示面板30包括上述实施例所述的屏下指纹识别装置20。\n\n[0038]如图4所示，本发明实施例提供的显示装置40结构示意图，所述显示装置40包括上述实施例所述的显示面板30。该显示装置30可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。\n\n[0039]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及指纹识别技术领域，尤其涉及一种屏下指纹识别装置、显示面板及显示装置。\n\n背景技术\n\n[0002]随着电子技术的发展，电子设备的显示屏逐渐向全面屏发展，越来越高的屏占比，这使得目前主流的电容式指纹模组无处放置。于是，屏下光学指纹应运而生。\n\n[0003]电子产品整体工艺设计能力提升、消费者审美观也在不断的被引导、被提升，因此手机屏幕由之前多元化的设计，整体趋势逐渐转换成全面屏设计方向，覆晶薄膜、超窄边框等显示屏中全面屏相关指标的设计能力、工艺能力在不到一年的时间内不断的提升，屏占比也由80％逐渐提升到了97％。而其中屏下指纹识别的研究尤其热门，它直接将指纹模组集成到屏下，以大大提高屏占比。\n\n[0004]目前，对于有机发光二极管(Organic Light-Emitting Diode，简称OLED)显示屏而言，屏下光学指纹识别方案的应用已经越来越多。OLED显示屏的屏下光学指纹方案是指通过利用OLED显示屏本身的透光性以及屏幕自身的光来照射手指，进而检测指纹。\n\n[0005]对于液晶显示器(Liquid Crystal Display，简称LCD)而言，LCD的背光模组透光性能比较差，屏下指纹识别虽然也有多种方案，例如，包括小孔、准直等。但是，液晶显示器由于背光的原因，使得在其内部实施小孔方案比较困难，这主要的原因是在于：经用户手指反射回来的光线会同时通过小孔和像素对应的开口区而传递至图像传感器装置上，而且在一般情况下，像素对应的开口区的面积比小孔的面积大得多，因此，容易覆盖小孔成像的信号，进而导致图像传感器装置难以成像。\n\n[0006]有鉴于此，亟需提供一种新的屏下指纹识别装置以解决上述问题。\n\n发明内容\n\n[0007]为了解决上述问题，本发明实施例提供了一种屏下指纹识别装置，能够有效解决光线通过像素开口区覆盖小孔成像的信号所导致图像传感器难以成像的问题。\n\n[0008]本发明实施例提供了一种屏下指纹识别装置，适用于显示面板，所述屏下指纹识别装置包括：光源，所述光源设置在显示面板的一侧；多个图像传感器，所述多个图像传感器设置在所述显示面板的彩膜层内；以及小孔层，所述小孔层设置在所述显示面板的所述彩膜层的上方；所述小孔层包括多个间隔设置的控光膜和小孔区；每一所述控光膜位于与所述彩膜层的每一像素的相对应位置；每一所述小孔区包括一小孔，每一所述小孔与每一所述图像传感器相对应位置。\n\n[0009]进一步地，所述光源为mini-LED或Micro-LED。\n\n[0010]进一步地，所述光源产生的光为不可见光。\n\n[0011]进一步地，所述不可见光为红外光。\n\n[0012]进一步的，所述光源的走线为复用所述显示面板的触控信号走线。\n\n[0013]进一步地，所述控光膜仅允许通过可见光。\n\n[0014]进一步地，所述小孔的孔径范围为5um至50um。\n\n[0015]本发明实施例还提供了一种显示面板，所述显示面板包括上述任一所述的屏下指纹识别装置。\n\n[0016]本发明实施例还提供了一种显示装置，所述显示装置包括上述显示面板。\n\n[0017]本发明的优点在于，本发明通过在像素开口区加入控光膜，用以区分指纹识别光线和正常显示光线，并且将图像传感器设置为仅识别不可见光源，如此设计使得不可见光只能通过设置于小孔层内的小孔传递至所述图像传感器，从而提高指纹识别信号的信噪比。\n\n附图说明\n\n[0018]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0019]图1为发明实施例提供的一种屏下指纹识别装置的结构示意图。\n\n[0020]图2为本明实施例提供的屏下指纹识别装置的俯视结构示意图。\n\n[0021]图3为本发明实施例提供的一种显示面板结构示意图。\n\n[0022]图4为本发明实施例提供的一种显示装置结构示意图。\n\n具体实施方式\n\n[0023]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例，基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0024]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。\n\n[0025]此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量，由此限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征，在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0026]如图1所示，为本发明实施例提供的一种屏下指纹识别装置的结构示意图，其适用于一显示面板，所述屏下指纹识别装置包括：光源4、多个图像传感器10、小孔层2。其中，如图3所示的显示面板包括彩膜层1和导光层3。\n\n[0027]结合参阅图2，所述光源4设置在显示面板的一侧，所述多个图像传感器10设置在所述显示面板30的彩膜层1内，所述小孔层2设置在所述显示面板的所述彩膜层1的上方，所述小孔层2包括多个间隔设置的控光膜5和小孔区12，每一所述控光膜5位于与所述彩膜层1的每一像素9的相对应位置，每一所述小孔区12包括一小孔6，每一所述小孔6位于与每一所述图像传感器10相对应位置。\n\n[0028]所述彩膜层1中包括像素9和多个图像传感器10。\n\n[0029]在本发明的一个实施例中，像素9的排列方式为菱形排列方式，其每一个像素单元中可以包括两个红色子像素、蓝色子像素、绿色子像素。但不限于此，在其他部分实施例中，像素9也可以为其他的排列方式。例如，将RGB的三原色按照1:1:1的方式排列。\n\n[0030]其中所述图像传感器10是利用光电器件的光电转换功能，将感光面上的光像转换为与光像成相应比例关系的电信号。与光敏二极管，光敏三极管等“点”光源的光敏元件相比，图像传感器是将其受光面上的光像，分成许多小单元，将其转换成可用的电信号的一种功能器件。在本发明实施例中每一所述图像传感器10仅能识别不可见光源。\n\n[0031]所述光源4所产生的光为不可见光，不可见光穿过小孔6能够被所述图像传感器10识别，用以完成指纹识别的功能。本发明实施例中不可见光采用红外光，但不限于此，不可见光是指人类肉眼看不到的光，其中主还包括紫外光、远红外光等。一般人的眼睛可以感知的电磁波的波长在400到700纳米之间。\n\n[0032]所述光源为小型有机发光二极管(简称mini-LED)或微型有机发光二极管(简称Micro-LED)，其中mini-LED尺寸约为100微米的LED，mini-LED的优点容易实现批量生产，而Micro-LED尺寸为1微米至100微米，Micro-LED的优点为高效率，高亮度，高可靠性，响应时间短。\n\n[0033]所述光源4的走线为复用显示面板的触控走线，该触控走线为双绞线。由于在指纹识别时，双绞线信号线未开始正常工作，因此可以作为所述光源的走线。但不限于此，在不影响显示面板正常工作的前提下，在其他部分实施例中也可以复用其他走线，从而节省空间和成本。\n\n[0034]所述小孔层2包括多个小孔6和多个控光膜5，所述小孔6的孔径为5um至50um。在本发明实施例中，所使用的小孔6的孔径为10um。\n\n[0035]其中所述小孔6用于通过所述光源4产生的不可见光，所述控光膜5用于通过彩膜层1产生正常的可见光8，反射所述光源4产生的不可见光，如此设计使得不可见光只能通过所述小孔6传递至所述图像传感器10，从而提高指纹识别信号的信噪比。\n\n[0036]本发明的优点在于，本发明通过在像素开口区加入控光膜，用以区分指纹识别光线和正常的显示光线，并且将图像传感器设置为仅能识别不可见光源，如此设计使得不可见光只能通过设置于小孔层内的小孔传递至所述图像传感器，从而提高指纹识别信号的信噪比。\n\n[0037]如图3所示，本发明实施例提供的显示面板30结构示意图，所述显示面板30包括上述实施例所述的屏下指纹识别装置20。\n\n[0038]如图4所示，本发明实施例提供的显示装置40结构示意图，所述显示装置40包括上述实施例所述的显示面板30。该显示装置30可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。\n\n[0039]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10722, 23776, '技术领域\n\n[0001]本揭示涉及显示技术领域，尤其涉及一种显示面板及显示装置。\n\n背景技术\n\n[0002]微型发光二极管(Micro-LED)显示器件和目前的LCD、OLED显示器件相比，具有反应快、高色域、高分辨率、低能耗等优势。但其技术难点多且技术复杂，特别是其关键技术：巨量转移技术。\n\n[0003]微型LED芯片在制作完成后需要逐一转移到所需位置，需要转移的微型LED芯片数量大且转移后的位置精度要求高，需耗费大量的资源。随着技术的发展，巨量转移技术发展至今已经出了不少技术分支，如静电吸附、镭射激光烧触等。\n\n[0004]巨量转移技术即把数量巨大的微型LED芯片绑定在显示基板的驱动电路上，通过将锡(Sn)膏加热变成熔融的锡点进行绑定(锡熔点为231.89℃)。绑定过程中，易出现微型LED绑定不牢脱落现象，造成微型LED器件暗点。\n\n[0005]因此，现有微型LED脱落的问题需要解决。\n\n发明内容\n\n[0006]本揭示提供一种显示面板及显示装置，以缓解现有微型LED脱落的技术问题。\n\n[0007]为解决上述问题，本揭示提供的技术方案如下：\n\n[0008]本揭示实施例提供一种显示面板，其包括驱动背板、驱动电路、第一电极层、微型LED、第二电极层及绑定层。所述驱动电路设置于所述驱动背板上。所述第一电极层设置于所述驱动电路上。所述微型LED与所述驱动电路相对设置。所述第二电极层设置于所述微型LED下。所述绑定层设置于所述第一电极层和所述第二电极层之间，用于使所述驱动电路和所述微型LED电性连接。其中，所述绑定层与所述第一电极层的接触面积大于所述绑定层在所述驱动背板上正投影的投影面积。\n\n[0009]在本揭示实施例提供的显示面板中，所述第一电极层上设置有第一凸起结构。\n\n[0010]在本揭示实施例提供的显示面板中，所述第一凸起结构具有高度不同的多个凸起。\n\n[0011]在本揭示实施例提供的显示面板中，所述绑定层与所述第二电极层的接触面积大于所述绑定层在所述驱动背板上正投影的投影面积。\n\n[0012]在本揭示实施例提供的显示面板中，所述第二电极层上设置有第二凸起结构。\n\n[0013]在本揭示实施例提供的显示面板中，所述第二凸起结构具有高度不同的多个凸起。\n\n[0014]在本揭示实施例提供的显示面板中，所述第一凸起结构的所述多个凸起的其中之一或所述第二凸起结构的所述多个凸起的其中之一的截面形状为方形、三角形、梯形、圆弧中的至少一种。\n\n[0015]在本揭示实施例提供的显示面板中，所述第一凸起结构的所述多个凸起和所述第二凸起结构的所述多个凸起相对设置。\n\n[0016]在本揭示实施例提供的显示面板中，所述第一凸起结构的所述多个凸起和所述第二凸起结构的所述多个凸起交错设置。\n\n[0017]本揭示实施例还提供一种显示装置，其包括显示控制电路以及本揭示前述实施例其中之一提供的显示面板，其中所述显示控制电路用以控制所述显示面板进行画面显示。\n\n[0018]本揭示的有益效果为：本揭示提供的显示面板及显示装置中，增大了所述绑定层与所述第一电极层或与所述第二电极层的接触面积，提高了所述绑定层与所述第一电极层或与所述第二电极层间的附着力，进而使所述微型LED和所述驱动电路绑定的更牢，解决了在巨量转移绑定过程中出现微型LED绑定不牢脱落的问题。\n\n附图说明\n\n[0019]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0020]图1为本揭示实施例提供的显示面板第一种结构示意图；\n\n[0021]图2为本揭示实施例提供的第一凸起结构的截面形状示意图；\n\n[0022]图3至图5为本揭示实施例提供的凸起的多种截面形状示意图；\n\n[0023]图6为本揭示实施例提供的显示面板第二种结构示意图；\n\n[0024]图7为本揭示实施例提供的显示面板第三种结构示意图；\n\n[0025]图8至图12为本揭示实施例提供的显示面板制备方法中各步骤制得的结构示意图。\n\n具体实施方式\n\n[0026]以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。\n\n[0027]在一种实施例中，如图1所示，提供一种显示面板100，其包括驱动背板11、驱动电路12、第一电极层13、微型LED22、第二电极层23及绑定层30。所述驱动电路12设置于所述驱动背板11上。所述第一电极层13设置于所述驱动电路12上。所述微型LED22与所述驱动电路12相对设置。所述第二电极层23设置于所述微型LED22下。所述绑定层30设置于所述第一电极层13和所述第二电极层23之间，用于使所述驱动电路12和所述微型LED22电性连接。其中，所述绑定层30与所述第一电极层13的接触面积大于所述绑定层30在所述驱动背板11上正投影的投影面积。\n\n[0028]在一种实施例中，所述绑定层30的材料为锡、铟等中的至少一种。\n\n[0029]在本实施例中，通过增大所述绑定层与所述第一电极层的接触面积，从而提高了所述绑定层与所述第一电极层的间的附着力，缓解了巨量转移绑定过程中出现微型LED绑定不牢脱落的问题。\n\n[0030]具体的，所述第一电极层13和所述第二电极层23的材料均为导电电极材料。所述绑定层30的材料为锡、铟等中的至少一种，本实施例选用锡。\n\n[0031]具体的，所述第一电极层13设置于所述驱动电路12表面上，且与所述驱动电路12电性连接。所述第二电极层23设置于所述微型LED22下，且与所述微型LED22电性连接。所述第一电极层13和所述第二电极层23通过所述绑定层30熔融的锡绑定在一起，实现所述第一电极层13和所述第二电极层23电性连接。\n\n[0032]进一步的，所述第一电极层13和所述第二电极层23电性连接也即所述驱动电路12与所述微型LED22电性连接，以实现所述驱动电路12驱动所述微型LED22。\n\n[0033]具体的，微型LED先制备在转移基板上，然后通过巨量转移技术转移到驱动电路上，使微型LED和驱动电路绑定在一起，以实现驱动电路驱动微型LED，最后再剥离掉转移基板。\n\n[0034]在一种实施例中，所述绑定层30与所述第一电极层13的接触面积大于所述绑定层30在所述驱动背板11上正投影的投影面积。\n\n[0035]具体的，所述第一电极层13上设置第一凸起结构。\n\n[0036]进一步的，所述第一凸起结构具有高度不同多个凸起。如图2所示，为图1中所述第一电极层13的放大图。从图2中可以看出，所述第一电极层13上的第一凸起结构具有高度不同的多个凸起。其中高度H1大于高度H2。\n\n[0037]进一步的，所述第一凸起结构的所述多个凸起的其中之一的截面形状为方形、三角形、梯形、圆弧中的至少一种。本实施例的所述第一凸起结构的所述多个凸起截面形状均为方形，如图1所示。\n\n[0038]具体的，所述第一凸起结构是通过黄光蚀刻工艺在所述第一电极层13上制备得到。\n\n[0039]具体的，在所述第一电极层13上涂布光阻，通过掩膜板对涂布的光阻曝光，形成曝光区。然后对曝光区显影，形成凸起图形。接着对凸起图形烘干后进行蚀刻，蚀刻完成后剥离掉所述第一电极层13上光阻，即制得所需要第一凸起结构。\n\n[0040]在一种实施例中，所述绑定层熔融的锡点覆盖在所述第一电极层上，并填充在所述第一凸起结构的多个凸起之间的凹槽内，增大了所述绑定层和所述第一电极层的接触面积。\n\n[0041]需要说明的是，本揭示所述的凸起形状，从另外的角度看也即是凹槽形状。如相邻两个凸起之间即为凹槽，故本揭示不再区分凸起和凹槽，均以凸起为例来说明。\n\n[0042]在一种实施例中，所述第一电极层上的第一凸起结构截面形状还可以为三角形、梯形或圆弧中的至少一种。\n\n[0043]具体的，如图3所示，所述第一凸起结构的截面形状为三角形；如图4所示，所述第一凸起结构的截面形状为梯形；如图5所示，所述第一凸起结构的截面形状为圆弧。\n\n[0044]进一步的，所述第一凸起结构的截面形状不限于本揭示所列举的方形、三角形、梯形和圆弧。凡是通过在所述第一电极层上设置凸起结构来增大与所述绑定层接触面积的，均在本揭示保护范围内。\n\n[0045]在本实施例中，通过在所述第一电极层上设置第一凸起结构，增大了所述绑定层和所述第一电极层的接触面积，从而提高了所述绑定层和所述第一电极层间的附着力，缓解了在巨量转移绑定过程中出现微型LED绑定不牢脱落的问题。\n\n[0046]在一种实施例中，如图6所示，显示面板101包括驱动背板11、驱动电路12、第一电极层13、微型LED22、第二电极层23’及绑定层30’。其中，所述绑定层30’与所述第一电极层13的接触面积大于所述绑定层30’在所述驱动背板11上正投影的投影面积，且所述绑定层30’与所述第二电极层23’的接触面积大于所述绑定层30’在所述驱动背板11上正投影的投影面积。\n\n[0047]具体的，所述第一电极层13上设置有第一凸起结构且所述第二电极层23’上设置有第二凸起结构。\n\n[0048]具体的，所述第一凸起结构具有高度不同的多个凸起，如图2所示。所述第二凸起结构具有高度不同的多个凸起，所述第二凸起结构的所述多个凸起间的高度差异类似所述第一凸起结构的所述多个凸起间的高度差异，请参照图2，在此不再赘述。\n\n[0049]进一步的，所述第一凸起结构的所述多个凸起的其中之一或所述第二凸起结构的所述多个凸起的其中之一的截面形状为方形、三角形、梯形、圆弧中的至少一种。\n\n[0050]具体的，如图6所示，本实施例的所述第一凸起结构的所述多个凸起和所述第二凸起结构的所述多个凸起的截面形状均为方形。\n\n[0051]进一步的，所述第一凸起结构和所述第二凸起结构均是通过黄光蚀刻工艺制备得到。\n\n[0052]具体的，在所述第一电极层上涂布光阻，通过掩膜板对涂布的光阻曝光，形成曝光区。然后对曝光区显影，形成凸起图形。接着对凸起图形烘干后进行蚀刻，蚀刻完成后剥离掉所述第一电极层上光阻，即制得所需要的第一凸起结构。\n\n[0053]进一步的，在所述第二电极层上涂布光阻，通过掩膜板对涂布的光阻曝光，形成曝光区。然后对曝光区显影，形成凸起图形。接着对凸起图形烘干后进行蚀刻，蚀刻完成后剥离掉所述第二电极层上光阻，即制得所需要的第二凸起结构。\n\n[0054]在一种实施例中，所述第一凸起结构的所述多个凸起和所述第二凸起结构的所述多个凸起交错设置，如图6所示。\n\n[0055]在一种实施例中，所述第一电极层13和所述第二电极层23’通过所述绑定层30’熔融的锡绑定在一起，实现所述第一电极层13和所述第二电极层23’电性连接。\n\n[0056]具体的，把熔融的锡点覆盖在制备好第一凸起结构的所述第一电极层上。把制备好第二凸起结构的所述微型LED转移到覆盖有熔融锡点的所述第一电极层上。使所述微型LED下的所述第二电极层与熔融的锡点接触，使所述第一电极层和所述第二电极层电性连接。\n\n[0057]进一步的，所述第一电极层设置于所述驱动电路的表面上，且与所述驱动电路电性连接。所述第二电极层设置于所述微型LED下，且与所述微型LED电性连接。所述第一电极层和所述第二电极层通过所述绑定层电性连接。也即把所述微型LED绑定在所述驱动电路上。同时，所述第一电极层和所述第二电极层与所述绑定层的接触面积增大，提高附着力，使所述微型LED和所述驱动电路绑定更牢，不易脱落。\n\n[0058]在本实施例中，通过在所述第一电极层和所述第二电极层上分别设置第一凸起结构和第二凸起结构，且所述第一凸起结构的所述多个凸起和所述第二凸起结构的所述多个凸起交错设置，增大了所述第一电极层和所述第二电极层与所述绑定层的接触面积，提高了附着力，使所述微型LED和所述驱动电路绑定更牢。和上述实施例只在第一电极层设置第一凸起结构相比较，本实施例的绑定效果更好。\n\n[0059]在一种实施例中，与上述实施例不同的是，所述第一凸起结构的所述多个凸起和所述第二凸起结构的所述多个凸起相对设置，且所述第一凸起结构的所述多个凸起高度相同，所述第二凸起结构的所述多个凸起高度相同，如图7所示的显示面板102。\n\n[0060]具体的，第一电极层13’上设置有第一凸起结构，第二电极层23”上设置有第二凸起结构。绑定层30”位于所述第一电极层13’和所述第二电极层23”之间，使所述第一电极层13’和所述第二电极层23”电性连接。其他说明请参照上述实施例，在此不再赘述。\n\n[0061]在一种实施例中，第二电极层上设置有第二凸起结构，但第一电极层上未设置第一凸起结构，同样可以实现微型LED和驱动电路的电性连接，同时使微型LED和驱动电路绑定的更牢。具体实施方式请参照上述实施例的说明，在此不再赘述。\n\n[0062]需要说明的是，本揭示所述第一凸起结构或所述第二凸起结构具有的凸起数量，可根据实际生产工艺设置为一个或多个。上述各实施例图示中所述第一凸起结构的所述多个凸起或所述第二凸起结构的多个凸起均以三个凸起为例说明，但本揭示不局限于此。而且所述第一凸起结构的所述多个凸起或所述第二凸起结构的所述多个凸起的截面形状可以不限于一种，可以为多种的组合。上述各实施例均以同一凸起结构内的多个凸起的截面形状相同为例说明的。\n\n[0063]在一种实施例中，提供一种制备上述显示面板的方法，以图7所示的显示面板为例，包括以下步骤：\n\n[0064]步骤S1：提供一驱动基板，包括驱动背板11、驱动电路12以及第一电极层13”，如图8所示；\n\n[0065]步骤S2：第一凸起结构制备步骤，包括采用黄光蚀刻工艺在所述第一电极层13”制备第一凸起结构，制备完成第一凸起结构的第一电极层13’如图9所示；\n\n[0066]步骤S3：提供一已完成微型LED阵列的转移基板，包括衬底21、微型LED22以及第二电极层23，如图10所示；\n\n[0067]步骤S4：第二凸起结构制备步骤，包括采用黄光蚀刻工艺在所述第二电极层23制备第二凸起结构，制备完成第二凸起结构的第二电极层23”如图11所示；\n\n[0068]步骤S5：绑定层制备步骤，包括在制备好第一凸起结构的所述第一电极层13’上覆盖熔融的锡点30”，如图12所示；\n\n[0069]步骤S6：微型LED转移步骤，包括把转移基板上的微型LED转移到覆盖有熔融锡点的所述第一电极层上，使其绑定在一起，并剥离掉转移基板上的衬底，形成如图7所示的显示面板。\n\n[0070]具体的，在步骤S1中，所述驱动电路设置在所述驱动背板上，所述第一电极层设置在所述驱动电路上。\n\n[0071]具体的，在步骤S2中，在所述第一电极层上涂布光阻，通过掩膜板对涂布的光阻曝光，形成曝光区。然后对曝光区显影，形成凸起图形。接着对凸起图形烘干后进行蚀刻，蚀刻完成后剥离掉所述第一电极层上光阻，即制得所需要的第一凸起结构。\n\n[0072]具体的，在步骤S3中，所述微型LED设置在所述衬底上，所述第二电极层设置在所述微型LED下。\n\n[0073]具体的，在步骤S4中，在所述第二电极层上涂布光阻，通过掩膜板对涂布的光阻曝光，形成曝光区。然后对曝光区显影，形成凸起图形。接着对凸起图形烘干后进行蚀刻，蚀刻完成后剥离掉所述第二电极层上光阻，即制得所需要的第二凸起结构。\n\n[0074]具体的，在步骤S6中，把制备好第二凸起结构的所述微型LED转移到覆盖有熔融锡点的所述第一电极层上，使所述第二电极层与熔融的锡点接触，使所述第一电极层和所述第二电极层电性连接。\n\n[0075]进一步的，所述第一电极层设置于所述驱动电路的表面上，且与所述驱动电路电性连接。所述第二电极层设置于所述微型LED的下，且与所述微型LED电性连接。所述第一电极层和所述第二电极层通过所述绑定层电性连接，也即把所述微型LED绑定在所述驱动电路上。同时，所述第一电极层和所述第二电极层与所述绑定层的接触面积增大，提高附着力，使所述微型LED和所述驱动电路绑定更牢，不易脱落。\n\n[0076]在一种实施例中，提供一种显示装置，其包括显示控制电路以及前述实施例其中之一所述的显示面板，其中所述显示控制电路用以控制所述显示面板进行画面显示。\n\n[0077]根据上述实施例可知：\n\n[0078]本揭示提供一种显示面板及其制备方法以及显示装置。其显示面板包括驱动背板、驱动电路、第一电极层、微型LED、第二电极层及绑定层。所述驱动电路设置在所述驱动背板上且和所述微型LED相对设置。其中，所述驱动电路上的第一电极层设置有第一凸起结构，所述微型LED下的第二电极层设置有第二凸起结构。所述绑定层设置于所述第一电极层和所述第二电极层之间，用于使所述驱动电路和所述微型LED电性连接。本揭示通过在第一电极层或第二电极层设置凸起，增大了绑定层与第一电极层或与第二电极层的接触面积，提高了绑定层与第一电极层或与第二电极层之间的附着力，进而使微型LED和驱动电路绑定的更牢，缓解了在巨量转移绑定过程中出现微型LED绑定不牢脱落的问题。\n\n[0079]综上所述，虽然本揭示已以优选实施例揭露如上，但上述优选实施例并非用以限制本揭示，本领域的普通技术人员，在不脱离本揭示的精神和范围内，均可作各种更动与润饰，因此本揭示的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本揭示涉及显示技术领域，尤其涉及一种显示面板及显示装置。\n\n背景技术\n\n[0002]微型发光二极管(Micro-LED)显示器件和目前的LCD、OLED显示器件相比，具有反应快、高色域、高分辨率、低能耗等优势。但其技术难点多且技术复杂，特别是其关键技术：巨量转移技术。\n\n[0003]微型LED芯片在制作完成后需要逐一转移到所需位置，需要转移的微型LED芯片数量大且转移后的位置精度要求高，需耗费大量的资源。随着技术的发展，巨量转移技术发展至今已经出了不少技术分支，如静电吸附、镭射激光烧触等。\n\n[0004]巨量转移技术即把数量巨大的微型LED芯片绑定在显示基板的驱动电路上，通过将锡(Sn)膏加热变成熔融的锡点进行绑定(锡熔点为231.89℃)。绑定过程中，易出现微型LED绑定不牢脱落现象，造成微型LED器件暗点。\n\n[0005]因此，现有微型LED脱落的问题需要解决。\n\n发明内容\n\n[0006]本揭示提供一种显示面板及显示装置，以缓解现有微型LED脱落的技术问题。\n\n[0007]为解决上述问题，本揭示提供的技术方案如下：\n\n[0008]本揭示实施例提供一种显示面板，其包括驱动背板、驱动电路、第一电极层、微型LED、第二电极层及绑定层。所述驱动电路设置于所述驱动背板上。所述第一电极层设置于所述驱动电路上。所述微型LED与所述驱动电路相对设置。所述第二电极层设置于所述微型LED下。所述绑定层设置于所述第一电极层和所述第二电极层之间，用于使所述驱动电路和所述微型LED电性连接。其中，所述绑定层与所述第一电极层的接触面积大于所述绑定层在所述驱动背板上正投影的投影面积。\n\n[0009]在本揭示实施例提供的显示面板中，所述第一电极层上设置有第一凸起结构。\n\n[0010]在本揭示实施例提供的显示面板中，所述第一凸起结构具有高度不同的多个凸起。\n\n[0011]在本揭示实施例提供的显示面板中，所述绑定层与所述第二电极层的接触面积大于所述绑定层在所述驱动背板上正投影的投影面积。\n\n[0012]在本揭示实施例提供的显示面板中，所述第二电极层上设置有第二凸起结构。\n\n[0013]在本揭示实施例提供的显示面板中，所述第二凸起结构具有高度不同的多个凸起。\n\n[0014]在本揭示实施例提供的显示面板中，所述第一凸起结构的所述多个凸起的其中之一或所述第二凸起结构的所述多个凸起的其中之一的截面形状为方形、三角形、梯形、圆弧中的至少一种。\n\n[0015]在本揭示实施例提供的显示面板中，所述第一凸起结构的所述多个凸起和所述第二凸起结构的所述多个凸起相对设置。\n\n[0016]在本揭示实施例提供的显示面板中，所述第一凸起结构的所述多个凸起和所述第二凸起结构的所述多个凸起交错设置。\n\n[0017]本揭示实施例还提供一种显示装置，其包括显示控制电路以及本揭示前述实施例其中之一提供的显示面板，其中所述显示控制电路用以控制所述显示面板进行画面显示。\n\n[0018]本揭示的有益效果为：本揭示提供的显示面板及显示装置中，增大了所述绑定层与所述第一电极层或与所述第二电极层的接触面积，提高了所述绑定层与所述第一电极层或与所述第二电极层间的附着力，进而使所述微型LED和所述驱动电路绑定的更牢，解决了在巨量转移绑定过程中出现微型LED绑定不牢脱落的问题。\n\n附图说明\n\n[0019]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0020]图1为本揭示实施例提供的显示面板第一种结构示意图；\n\n[0021]图2为本揭示实施例提供的第一凸起结构的截面形状示意图；\n\n[0022]图3至图5为本揭示实施例提供的凸起的多种截面形状示意图；\n\n[0023]图6为本揭示实施例提供的显示面板第二种结构示意图；\n\n[0024]图7为本揭示实施例提供的显示面板第三种结构示意图；\n\n[0025]图8至图12为本揭示实施例提供的显示面板制备方法中各步骤制得的结构示意图。\n\n具体实施方式\n\n[0026]以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。\n\n[0027]在一种实施例中，如图1所示，提供一种显示面板100，其包括驱动背板11、驱动电路12、第一电极层13、微型LED22、第二电极层23及绑定层30。所述驱动电路12设置于所述驱动背板11上。所述第一电极层13设置于所述驱动电路12上。所述微型LED22与所述驱动电路12相对设置。所述第二电极层23设置于所述微型LED22下。所述绑定层30设置于所述第一电极层13和所述第二电极层23之间，用于使所述驱动电路12和所述微型LED22电性连接。其中，所述绑定层30与所述第一电极层13的接触面积大于所述绑定层30在所述驱动背板11上正投影的投影面积。\n\n[0028]在一种实施例中，所述绑定层30的材料为锡、铟等中的至少一种。\n\n[0029]在本实施例中，通过增大所述绑定层与所述第一电极层的接触面积，从而提高了所述绑定层与所述第一电极层的间的附着力，缓解了巨量转移绑定过程中出现微型LED绑定不牢脱落的问题。\n\n[0030]具体的，所述第一电极层13和所述第二电极层23的材料均为导电电极材料。所述绑定层30的材料为锡、铟等中的至少一种，本实施例选用锡。\n\n[0031]具体的，所述第一电极层13设置于所述驱动电路12表面上，且与所述驱动电路12电性连接。所述第二电极层23设置于所述微型LED22下，且与所述微型LED22电性连接。所述第一电极层13和所述第二电极层23通过所述绑定层30熔融的锡绑定在一起，实现所述第一电极层13和所述第二电极层23电性连接。\n\n[0032]进一步的，所述第一电极层13和所述第二电极层23电性连接也即所述驱动电路12与所述微型LED22电性连接，以实现所述驱动电路12驱动所述微型LED22。\n\n[0033]具体的，微型LED先制备在转移基板上，然后通过巨量转移技术转移到驱动电路上，使微型LED和驱动电路绑定在一起，以实现驱动电路驱动微型LED，最后再剥离掉转移基板。\n\n[0034]在一种实施例中，所述绑定层30与所述第一电极层13的接触面积大于所述绑定层30在所述驱动背板11上正投影的投影面积。\n\n[0035]具体的，所述第一电极层13上设置第一凸起结构。\n\n[0036]进一步的，所述第一凸起结构具有高度不同多个凸起。如图2所示，为图1中所述第一电极层13的放大图。从图2中可以看出，所述第一电极层13上的第一凸起结构具有高度不同的多个凸起。其中高度H1大于高度H2。\n\n[0037]进一步的，所述第一凸起结构的所述多个凸起的其中之一的截面形状为方形、三角形、梯形、圆弧中的至少一种。本实施例的所述第一凸起结构的所述多个凸起截面形状均为方形，如图1所示。\n\n[0038]具体的，所述第一凸起结构是通过黄光蚀刻工艺在所述第一电极层13上制备得到。\n\n[0039]具体的，在所述第一电极层13上涂布光阻，通过掩膜板对涂布的光阻曝光，形成曝光区。然后对曝光区显影，形成凸起图形。接着对凸起图形烘干后进行蚀刻，蚀刻完成后剥离掉所述第一电极层13上光阻，即制得所需要第一凸起结构。\n\n[0040]在一种实施例中，所述绑定层熔融的锡点覆盖在所述第一电极层上，并填充在所述第一凸起结构的多个凸起之间的凹槽内，增大了所述绑定层和所述第一电极层的接触面积。\n\n[0041]需要说明的是，本揭示所述的凸起形状，从另外的角度看也即是凹槽形状。如相邻两个凸起之间即为凹槽，故本揭示不再区分凸起和凹槽，均以凸起为例来说明。\n\n[0042]在一种实施例中，所述第一电极层上的第一凸起结构截面形状还可以为三角形、梯形或圆弧中的至少一种。\n\n[0043]具体的，如图3所示，所述第一凸起结构的截面形状为三角形；如图4所示，所述第一凸起结构的截面形状为梯形；如图5所示，所述第一凸起结构的截面形状为圆弧。\n\n[0044]进一步的，所述第一凸起结构的截面形状不限于本揭示所列举的方形、三角形、梯形和圆弧。凡是通过在所述第一电极层上设置凸起结构来增大与所述绑定层接触面积的，均在本揭示保护范围内。\n\n[0045]在本实施例中，通过在所述第一电极层上设置第一凸起结构，增大了所述绑定层和所述第一电极层的接触面积，从而提高了所述绑定层和所述第一电极层间的附着力，缓解了在巨量转移绑定过程中出现微型LED绑定不牢脱落的问题。\n\n[0046]在一种实施例中，如图6所示，显示面板101包括驱动背板11、驱动电路12、第一电极层13、微型LED22、第二电极层23’及绑定层30’。其中，所述绑定层30’与所述第一电极层13的接触面积大于所述绑定层30’在所述驱动背板11上正投影的投影面积，且所述绑定层30’与所述第二电极层23’的接触面积大于所述绑定层30’在所述驱动背板11上正投影的投影面积。\n\n[0047]具体的，所述第一电极层13上设置有第一凸起结构且所述第二电极层23’上设置有第二凸起结构。\n\n[0048]具体的，所述第一凸起结构具有高度不同的多个凸起，如图2所示。所述第二凸起结构具有高度不同的多个凸起，所述第二凸起结构的所述多个凸起间的高度差异类似所述第一凸起结构的所述多个凸起间的高度差异，请参照图2，在此不再赘述。\n\n[0049]进一步的，所述第一凸起结构的所述多个凸起的其中之一或所述第二凸起结构的所述多个凸起的其中之一的截面形状为方形、三角形、梯形、圆弧中的至少一种。\n\n[0050]具体的，如图6所示，本实施例的所述第一凸起结构的所述多个凸起和所述第二凸起结构的所述多个凸起的截面形状均为方形。\n\n[0051]进一步的，所述第一凸起结构和所述第二凸起结构均是通过黄光蚀刻工艺制备得到。\n\n[0052]具体的，在所述第一电极层上涂布光阻，通过掩膜板对涂布的光阻曝光，形成曝光区。然后对曝光区显影，形成凸起图形。接着对凸起图形烘干后进行蚀刻，蚀刻完成后剥离掉所述第一电极层上光阻，即制得所需要的第一凸起结构。\n\n[0053]进一步的，在所述第二电极层上涂布光阻，通过掩膜板对涂布的光阻曝光，形成曝光区。然后对曝光区显影，形成凸起图形。接着对凸起图形烘干后进行蚀刻，蚀刻完成后剥离掉所述第二电极层上光阻，即制得所需要的第二凸起结构。\n\n[0054]在一种实施例中，所述第一凸起结构的所述多个凸起和所述第二凸起结构的所述多个凸起交错设置，如图6所示。\n\n[0055]在一种实施例中，所述第一电极层13和所述第二电极层23’通过所述绑定层30’熔融的锡绑定在一起，实现所述第一电极层13和所述第二电极层23’电性连接。\n\n[0056]具体的，把熔融的锡点覆盖在制备好第一凸起结构的所述第一电极层上。把制备好第二凸起结构的所述微型LED转移到覆盖有熔融锡点的所述第一电极层上。使所述微型LED下的所述第二电极层与熔融的锡点接触，使所述第一电极层和所述第二电极层电性连接。\n\n[0057]进一步的，所述第一电极层设置于所述驱动电路的表面上，且与所述驱动电路电性连接。所述第二电极层设置于所述微型LED下，且与所述微型LED电性连接。所述第一电极层和所述第二电极层通过所述绑定层电性连接。也即把所述微型LED绑定在所述驱动电路上。同时，所述第一电极层和所述第二电极层与所述绑定层的接触面积增大，提高附着力，使所述微型LED和所述驱动电路绑定更牢，不易脱落。\n\n[0058]在本实施例中，通过在所述第一电极层和所述第二电极层上分别设置第一凸起结构和第二凸起结构，且所述第一凸起结构的所述多个凸起和所述第二凸起结构的所述多个凸起交错设置，增大了所述第一电极层和所述第二电极层与所述绑定层的接触面积，提高了附着力，使所述微型LED和所述驱动电路绑定更牢。和上述实施例只在第一电极层设置第一凸起结构相比较，本实施例的绑定效果更好。\n\n[0059]在一种实施例中，与上述实施例不同的是，所述第一凸起结构的所述多个凸起和所述第二凸起结构的所述多个凸起相对设置，且所述第一凸起结构的所述多个凸起高度相同，所述第二凸起结构的所述多个凸起高度相同，如图7所示的显示面板102。\n\n[0060]具体的，第一电极层13’上设置有第一凸起结构，第二电极层23”上设置有第二凸起结构。绑定层30”位于所述第一电极层13’和所述第二电极层23”之间，使所述第一电极层13’和所述第二电极层23”电性连接。其他说明请参照上述实施例，在此不再赘述。\n\n[0061]在一种实施例中，第二电极层上设置有第二凸起结构，但第一电极层上未设置第一凸起结构，同样可以实现微型LED和驱动电路的电性连接，同时使微型LED和驱动电路绑定的更牢。具体实施方式请参照上述实施例的说明，在此不再赘述。\n\n[0062]需要说明的是，本揭示所述第一凸起结构或所述第二凸起结构具有的凸起数量，可根据实际生产工艺设置为一个或多个。上述各实施例图示中所述第一凸起结构的所述多个凸起或所述第二凸起结构的多个凸起均以三个凸起为例说明，但本揭示不局限于此。而且所述第一凸起结构的所述多个凸起或所述第二凸起结构的所述多个凸起的截面形状可以不限于一种，可以为多种的组合。上述各实施例均以同一凸起结构内的多个凸起的截面形状相同为例说明的。\n\n[0063]在一种实施例中，提供一种制备上述显示面板的方法，以图7所示的显示面板为例，包括以下步骤：\n\n[0064]步骤S1：提供一驱动基板，包括驱动背板11、驱动电路12以及第一电极层13”，如图8所示；\n\n[0065]步骤S2：第一凸起结构制备步骤，包括采用黄光蚀刻工艺在所述第一电极层13”制备第一凸起结构，制备完成第一凸起结构的第一电极层13’如图9所示；\n\n[0066]步骤S3：提供一已完成微型LED阵列的转移基板，包括衬底21、微型LED22以及第二电极层23，如图10所示；\n\n[0067]步骤S4：第二凸起结构制备步骤，包括采用黄光蚀刻工艺在所述第二电极层23制备第二凸起结构，制备完成第二凸起结构的第二电极层23”如图11所示；\n\n[0068]步骤S5：绑定层制备步骤，包括在制备好第一凸起结构的所述第一电极层13’上覆盖熔融的锡点30”，如图12所示；\n\n[0069]步骤S6：微型LED转移步骤，包括把转移基板上的微型LED转移到覆盖有熔融锡点的所述第一电极层上，使其绑定在一起，并剥离掉转移基板上的衬底，形成如图7所示的显示面板。\n\n[0070]具体的，在步骤S1中，所述驱动电路设置在所述驱动背板上，所述第一电极层设置在所述驱动电路上。\n\n[0071]具体的，在步骤S2中，在所述第一电极层上涂布光阻，通过掩膜板对涂布的光阻曝光，形成曝光区。然后对曝光区显影，形成凸起图形。接着对凸起图形烘干后进行蚀刻，蚀刻完成后剥离掉所述第一电极层上光阻，即制得所需要的第一凸起结构。\n\n[0072]具体的，在步骤S3中，所述微型LED设置在所述衬底上，所述第二电极层设置在所述微型LED下。\n\n[0073]具体的，在步骤S4中，在所述第二电极层上涂布光阻，通过掩膜板对涂布的光阻曝光，形成曝光区。然后对曝光区显影，形成凸起图形。接着对凸起图形烘干后进行蚀刻，蚀刻完成后剥离掉所述第二电极层上光阻，即制得所需要的第二凸起结构。\n\n[0074]具体的，在步骤S6中，把制备好第二凸起结构的所述微型LED转移到覆盖有熔融锡点的所述第一电极层上，使所述第二电极层与熔融的锡点接触，使所述第一电极层和所述第二电极层电性连接。\n\n[0075]进一步的，所述第一电极层设置于所述驱动电路的表面上，且与所述驱动电路电性连接。所述第二电极层设置于所述微型LED的下，且与所述微型LED电性连接。所述第一电极层和所述第二电极层通过所述绑定层电性连接，也即把所述微型LED绑定在所述驱动电路上。同时，所述第一电极层和所述第二电极层与所述绑定层的接触面积增大，提高附着力，使所述微型LED和所述驱动电路绑定更牢，不易脱落。\n\n[0076]在一种实施例中，提供一种显示装置，其包括显示控制电路以及前述实施例其中之一所述的显示面板，其中所述显示控制电路用以控制所述显示面板进行画面显示。\n\n[0077]根据上述实施例可知：\n\n[0078]本揭示提供一种显示面板及其制备方法以及显示装置。其显示面板包括驱动背板、驱动电路、第一电极层、微型LED、第二电极层及绑定层。所述驱动电路设置在所述驱动背板上且和所述微型LED相对设置。其中，所述驱动电路上的第一电极层设置有第一凸起结构，所述微型LED下的第二电极层设置有第二凸起结构。所述绑定层设置于所述第一电极层和所述第二电极层之间，用于使所述驱动电路和所述微型LED电性连接。本揭示通过在第一电极层或第二电极层设置凸起，增大了绑定层与第一电极层或与第二电极层的接触面积，提高了绑定层与第一电极层或与第二电极层之间的附着力，进而使微型LED和驱动电路绑定的更牢，缓解了在巨量转移绑定过程中出现微型LED绑定不牢脱落的问题。\n\n[0079]综上所述，虽然本揭示已以优选实施例揭露如上，但上述优选实施例并非用以限制本揭示，本领域的普通技术人员，在不脱离本揭示的精神和范围内，均可作各种更动与润饰，因此本揭示的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10723, 23777, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种背光模组及液晶显示装置。\n\n背景技术\n\n[0002]随着全面屏的市场发展迅猛，其中以刘海屏、水滴屏为代表，逐渐占据市场的主流，主要就是追求更高的屏占比。其开发思路是在屏幕上挖孔设计，放置前置摄像头。其将有效显示区域做大，提高显示屏的屏占比；另外，由于可以减小非显示区域的大小，从而有效减小显示屏总尺寸，使用户方便持握，提升用户体验。目前，为追求极致全面屏，异型切割屏成为主流解决方案，从刻痕设计到最新的盲孔设计，都需求对背光部分做对应的异型切割，以得到摄像头、感应器等器件空间，从而导致屏幕无法达到真正意义上的全面屏。\n\n[0003]综上所述，现有的背光模组及液晶显示装置，由于需要追求更高的屏占比而进行盲孔设计，以得到摄像头、感应器等器件空间，从而导致屏幕无法达到真正意义上的全面屏，进一步影响了全面屏的显示效果。\n\n发明内容\n\n[0004]本申请实施例提供一种背光模组及液晶显示装置，能够使背光通孔在提供器件空间同时能自由转换成背光源，实现两者二合一，以解决现有的背光模组及液晶显示装置，由于需要追求更高的屏占比而进行盲孔设计，以得到摄像头、感应器等器件空间，从而导致屏幕无法达到真正意义上的全面屏，进一步影响了全面屏的显示效果的技术问题。\n\n[0005]为解决上述问题，本发明提供的技术方案如下：\n\n[0006]本申请实施例提供一种背光模组，所述背光模组具有盲孔区域以及围绕所述盲孔区域的背光区域，所述盲孔区域内开设有盲孔，所述盲孔区域内还包括背板、第一固定胶、环形Mini-LED灯带以及玻璃盖板；\n\n[0007]其中，所述第一固定胶，设置于所述盲孔两侧的盲孔侧壁上，所述环形Mini-LED灯带，设置于所述盲孔内并通过所述第一固定胶粘接于所述盲孔侧壁上，所述玻璃盖板与所述环形Mini-LED灯带的上表面相接触；所述盲孔内还设置有调光玻璃，所述调光玻璃的两端分别与所述环形Mini-LED灯带的下表面接触，且分别通过所述第一固定胶粘接于所述盲孔侧壁上。\n\n[0008]在一些实施例中，所述盲孔内还设置有摄像头，所述摄像头位于所述调光玻璃的下方，所述摄像头的入光侧朝向所述调光玻璃。\n\n[0009]在一些实施例中，当所述背光模组处于充电状态时，所述调光玻璃呈透明状态，所述环形Mini-LED灯带呈不发光状态，所述摄像头通过所述调光玻璃正常取景。\n\n[0010]在一些实施例中，当所述背光模组处于不充电状态时，所述调光玻璃呈白色雾化状态，所述环形Mini-LED灯带呈发光状态，所述环形Mini-LED灯带发射的光线通过所述调光玻璃反射至外界。\n\n[0011]在一些实施例中，所述第一固定胶为黑黑胶。\n\n[0012]在一些实施例中，所述背光区域还包括所述背板、背光源、导光板、光学膜层、中框以及所述玻璃盖板。\n\n[0013]在一些实施例中，所述光学膜层还包括棱镜膜以及扩散膜。\n\n[0014]本申请实施例还提供一种液晶显示装置，包括上述的背光模组。\n\n[0015]在一些实施例中，所述液晶显示装置还包括位于所述背光模组上方的液晶显示面板，所述液晶显示面板还包括由下至上设置的TFT阵列基板、第二固定胶、第一ITO层、液晶层、第二ITO层、第三固定胶以及彩膜基板。\n\n[0016]在一些实施例中，所述第二固定胶以及所述第三固定胶的材料为EVA胶。\n\n[0017]本申请实施例所提供的背光模组及液晶显示装置，在背光盲孔中设置了环形Mini-LED灯带以及调光玻璃，使背光盲孔在提供器件空间同时能自由转换成背光源，进一步提升了全面屏的显示效果。\n\n附图说明\n\n[0018]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0019]图1为本申请实施例背光模组的截面结构示意图。\n\n[0020]图2为本申请实施例背光模组在通电状态时的光线路径示意图。\n\n[0021]图3为本申请实施例背光模组在不通电状态时的光线路径示意图。\n\n[0022]图4为本申请实施例液晶显示装置中液晶显示面板的截面结构示意图。\n\n具体实施方式\n\n[0023]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0024]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0025]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0026]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0027]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0028]本申请实施例针对现有的背光模组及液晶显示装置，由于需要追求更高的屏占比而进行盲孔设计，以得到摄像头、感应器等器件空间，从而导致屏幕无法达到真正意义上的全面屏，进一步影响了全面屏的显示效果的技术问题，本实施例能够解决该缺陷。\n\n[0029]如图1所示，为本申请实施例背光模组的截面结构示意图。其中，所述背光模组10具有盲孔区域11以及围绕所述盲孔区域11的背光区域12，所述盲孔区域11内开设有盲孔，其特征在于，所述盲孔区域内11还包括背板13、第一固定胶111、环形Mini-LED灯带112以及玻璃盖板14；\n\n[0030]其中，所述第一固定胶111设置于所述盲孔两侧的盲孔侧壁上，所述环形Mini-LED灯带112设置于所述盲孔内并通过所述第一固定胶111粘接于所述盲孔侧壁上，所述玻璃盖板14与所述环形Mini-LED灯带112的上表面相接触；所述盲孔内还设置有调光玻璃113，所述调光玻璃113的两端分别与所述环形Mini-LED灯带112的下表面接触，且分别通过所述第一固定胶111粘接于所述盲孔侧壁上。\n\n[0031]具体地，所述第一固定胶111优选为黑黑胶。\n\n[0032]具体地，所述环形Mini-LED灯带40由多个尺寸在100μm×100μm左右的LED(发光二极管)芯片构成，其具有色彩饱和度高、可局部调光、亮度高、节能等优点，可应用于背光显示器，已成为最近的研究热点。具体地，所述盲孔内还设置有摄像头114，所述摄像头114位于所述调光玻璃113的下方，所述摄像头114的入光侧朝向所述调光玻璃113。\n\n[0033]具体地，所述背光区域12还包括所述背板13、背光源121、导光板122、光学膜层、中框125以及所述玻璃盖板14。其中，所述光学膜层还包括棱镜膜123以及扩散膜124。\n\n[0034]如图2所示，为本申请实施例背光模组在通电状态时光线路径示意图。当所述背光模组处于充电状态时，所述调光玻璃113通电激发，呈现透明状态，所述环形Mini-LED灯带112不通电，呈现不发光状态，外界光线30经所述调光玻璃113射入到所述摄像头114中，所述摄像头114可以通过射入的所述外界光线30正常取景，不影响拍摄。\n\n[0035]如图3所示，为本申请实施例背光模组在不通电状态时光线路径示意图。当所述背光模组处于不充电状态时，所述调光玻璃113呈现白色雾化状态，可以充当临时白反作用，即相当于反射板；此时，所述环形Mini-LED灯带112通电，呈现发光状态；所述环形Mini-LED灯带112发射的光线通过所述调光玻璃113被反射至位于所述背光模组10上方的液晶显示面板的正面，为所述液晶显示面板的显示画面提供光源。此时，所述摄像头114因未接收到光线而处于背光状态，所述摄像头114不工作。\n\n[0036]本申请实施例还提供了一种使用所述背光模组10制备的液晶显示装置，所述液晶显示装置还包括位于所述背光模组10上方的液晶显示面板。\n\n[0037]如图4所示，为本申请实施例液晶显示装置中液晶显示面板的截面结构示意图。其中，所述液晶显示面板50还包括由下至上设置的TFT阵列基板51、第二固定胶52、第一ITO层53、液晶层54、第二ITO层55、第三固定胶56以及彩膜基板57。具体地，所述背光模组10设置于靠近所述TFT阵列基板51一侧。\n\n[0038]具体地，所述TFT阵列基板51上包括多个TFT(英文全称：thin film transistor，薄膜晶体管)，所述TFT的作用是用来主动控制每一个像素的器件，这样就相当于在每一个像素点上设计了一个场效应开关管。\n\n[0039]具体地，所述彩色基板57(英文全称：Color filter，简称CF)基本结构是由玻璃基板(Glass Substrate)，黑色矩阵(Black Matrix)，彩色层(Color Layer)以及保护层(OverCoat)组成。所述彩色基板57是一种表现颜色的光学滤光片，它可以精确选择欲通过的小范围波段光波，而反射掉其他不希望通过的波段。\n\n[0040]具体地，所述第一ITO层53以及所述第二ITO层55为所述液晶显示面板50的公共电极，所述第一ITO层53以及所述第二ITO层55的材质为ITO(氧化铟锡)。\n\n[0041]具体地，所述第二固定胶52以及所述第三固定胶56用于胶结所述液晶显示面板50中的光学元件的特种胶粘剂；所述第二固定胶52以及所述第三固定胶56优选为EVA(Polyethylene vinylacetate,聚乙烯-聚醋酸乙烯酯共聚物)胶。其中，EVA胶一种热固性有粘性的胶膜，用于放在夹胶玻璃中间。由于EVA胶膜在粘着力、耐久性、光学特性等方面具有的优越性，使得它被越来越广泛的应用于电流组件以及各种光学产品。\n\n[0042]本申请实施例所提供的背光模组及液晶显示装置，在背光盲孔中设置了环形Mini-LED灯带以及调光玻璃，使背光盲孔在提供器件空间同时能自由转换成背光源，进一步提升了全面屏的显示效果。\n\n[0043]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0044]以上对本申请实施例所提供的一种背光模组及液晶显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种背光模组及液晶显示装置。\n\n背景技术\n\n[0002]随着全面屏的市场发展迅猛，其中以刘海屏、水滴屏为代表，逐渐占据市场的主流，主要就是追求更高的屏占比。其开发思路是在屏幕上挖孔设计，放置前置摄像头。其将有效显示区域做大，提高显示屏的屏占比；另外，由于可以减小非显示区域的大小，从而有效减小显示屏总尺寸，使用户方便持握，提升用户体验。目前，为追求极致全面屏，异型切割屏成为主流解决方案，从刻痕设计到最新的盲孔设计，都需求对背光部分做对应的异型切割，以得到摄像头、感应器等器件空间，从而导致屏幕无法达到真正意义上的全面屏。\n\n[0003]综上所述，现有的背光模组及液晶显示装置，由于需要追求更高的屏占比而进行盲孔设计，以得到摄像头、感应器等器件空间，从而导致屏幕无法达到真正意义上的全面屏，进一步影响了全面屏的显示效果。\n\n发明内容\n\n[0004]本申请实施例提供一种背光模组及液晶显示装置，能够使背光通孔在提供器件空间同时能自由转换成背光源，实现两者二合一，以解决现有的背光模组及液晶显示装置，由于需要追求更高的屏占比而进行盲孔设计，以得到摄像头、感应器等器件空间，从而导致屏幕无法达到真正意义上的全面屏，进一步影响了全面屏的显示效果的技术问题。\n\n[0005]为解决上述问题，本发明提供的技术方案如下：\n\n[0006]本申请实施例提供一种背光模组，所述背光模组具有盲孔区域以及围绕所述盲孔区域的背光区域，所述盲孔区域内开设有盲孔，所述盲孔区域内还包括背板、第一固定胶、环形Mini-LED灯带以及玻璃盖板；\n\n[0007]其中，所述第一固定胶，设置于所述盲孔两侧的盲孔侧壁上，所述环形Mini-LED灯带，设置于所述盲孔内并通过所述第一固定胶粘接于所述盲孔侧壁上，所述玻璃盖板与所述环形Mini-LED灯带的上表面相接触；所述盲孔内还设置有调光玻璃，所述调光玻璃的两端分别与所述环形Mini-LED灯带的下表面接触，且分别通过所述第一固定胶粘接于所述盲孔侧壁上。\n\n[0008]在一些实施例中，所述盲孔内还设置有摄像头，所述摄像头位于所述调光玻璃的下方，所述摄像头的入光侧朝向所述调光玻璃。\n\n[0009]在一些实施例中，当所述背光模组处于充电状态时，所述调光玻璃呈透明状态，所述环形Mini-LED灯带呈不发光状态，所述摄像头通过所述调光玻璃正常取景。\n\n[0010]在一些实施例中，当所述背光模组处于不充电状态时，所述调光玻璃呈白色雾化状态，所述环形Mini-LED灯带呈发光状态，所述环形Mini-LED灯带发射的光线通过所述调光玻璃反射至外界。\n\n[0011]在一些实施例中，所述第一固定胶为黑黑胶。\n\n[0012]在一些实施例中，所述背光区域还包括所述背板、背光源、导光板、光学膜层、中框以及所述玻璃盖板。\n\n[0013]在一些实施例中，所述光学膜层还包括棱镜膜以及扩散膜。\n\n[0014]本申请实施例还提供一种液晶显示装置，包括上述的背光模组。\n\n[0015]在一些实施例中，所述液晶显示装置还包括位于所述背光模组上方的液晶显示面板，所述液晶显示面板还包括由下至上设置的TFT阵列基板、第二固定胶、第一ITO层、液晶层、第二ITO层、第三固定胶以及彩膜基板。\n\n[0016]在一些实施例中，所述第二固定胶以及所述第三固定胶的材料为EVA胶。\n\n[0017]本申请实施例所提供的背光模组及液晶显示装置，在背光盲孔中设置了环形Mini-LED灯带以及调光玻璃，使背光盲孔在提供器件空间同时能自由转换成背光源，进一步提升了全面屏的显示效果。\n\n附图说明\n\n[0018]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0019]图1为本申请实施例背光模组的截面结构示意图。\n\n[0020]图2为本申请实施例背光模组在通电状态时的光线路径示意图。\n\n[0021]图3为本申请实施例背光模组在不通电状态时的光线路径示意图。\n\n[0022]图4为本申请实施例液晶显示装置中液晶显示面板的截面结构示意图。\n\n具体实施方式\n\n[0023]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0024]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0025]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0026]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0027]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0028]本申请实施例针对现有的背光模组及液晶显示装置，由于需要追求更高的屏占比而进行盲孔设计，以得到摄像头、感应器等器件空间，从而导致屏幕无法达到真正意义上的全面屏，进一步影响了全面屏的显示效果的技术问题，本实施例能够解决该缺陷。\n\n[0029]如图1所示，为本申请实施例背光模组的截面结构示意图。其中，所述背光模组10具有盲孔区域11以及围绕所述盲孔区域11的背光区域12，所述盲孔区域11内开设有盲孔，其特征在于，所述盲孔区域内11还包括背板13、第一固定胶111、环形Mini-LED灯带112以及玻璃盖板14；\n\n[0030]其中，所述第一固定胶111设置于所述盲孔两侧的盲孔侧壁上，所述环形Mini-LED灯带112设置于所述盲孔内并通过所述第一固定胶111粘接于所述盲孔侧壁上，所述玻璃盖板14与所述环形Mini-LED灯带112的上表面相接触；所述盲孔内还设置有调光玻璃113，所述调光玻璃113的两端分别与所述环形Mini-LED灯带112的下表面接触，且分别通过所述第一固定胶111粘接于所述盲孔侧壁上。\n\n[0031]具体地，所述第一固定胶111优选为黑黑胶。\n\n[0032]具体地，所述环形Mini-LED灯带40由多个尺寸在100μm×100μm左右的LED(发光二极管)芯片构成，其具有色彩饱和度高、可局部调光、亮度高、节能等优点，可应用于背光显示器，已成为最近的研究热点。具体地，所述盲孔内还设置有摄像头114，所述摄像头114位于所述调光玻璃113的下方，所述摄像头114的入光侧朝向所述调光玻璃113。\n\n[0033]具体地，所述背光区域12还包括所述背板13、背光源121、导光板122、光学膜层、中框125以及所述玻璃盖板14。其中，所述光学膜层还包括棱镜膜123以及扩散膜124。\n\n[0034]如图2所示，为本申请实施例背光模组在通电状态时光线路径示意图。当所述背光模组处于充电状态时，所述调光玻璃113通电激发，呈现透明状态，所述环形Mini-LED灯带112不通电，呈现不发光状态，外界光线30经所述调光玻璃113射入到所述摄像头114中，所述摄像头114可以通过射入的所述外界光线30正常取景，不影响拍摄。\n\n[0035]如图3所示，为本申请实施例背光模组在不通电状态时光线路径示意图。当所述背光模组处于不充电状态时，所述调光玻璃113呈现白色雾化状态，可以充当临时白反作用，即相当于反射板；此时，所述环形Mini-LED灯带112通电，呈现发光状态；所述环形Mini-LED灯带112发射的光线通过所述调光玻璃113被反射至位于所述背光模组10上方的液晶显示面板的正面，为所述液晶显示面板的显示画面提供光源。此时，所述摄像头114因未接收到光线而处于背光状态，所述摄像头114不工作。\n\n[0036]本申请实施例还提供了一种使用所述背光模组10制备的液晶显示装置，所述液晶显示装置还包括位于所述背光模组10上方的液晶显示面板。\n\n[0037]如图4所示，为本申请实施例液晶显示装置中液晶显示面板的截面结构示意图。其中，所述液晶显示面板50还包括由下至上设置的TFT阵列基板51、第二固定胶52、第一ITO层53、液晶层54、第二ITO层55、第三固定胶56以及彩膜基板57。具体地，所述背光模组10设置于靠近所述TFT阵列基板51一侧。\n\n[0038]具体地，所述TFT阵列基板51上包括多个TFT(英文全称：thin film transistor，薄膜晶体管)，所述TFT的作用是用来主动控制每一个像素的器件，这样就相当于在每一个像素点上设计了一个场效应开关管。\n\n[0039]具体地，所述彩色基板57(英文全称：Color filter，简称CF)基本结构是由玻璃基板(Glass Substrate)，黑色矩阵(Black Matrix)，彩色层(Color Layer)以及保护层(OverCoat)组成。所述彩色基板57是一种表现颜色的光学滤光片，它可以精确选择欲通过的小范围波段光波，而反射掉其他不希望通过的波段。\n\n[0040]具体地，所述第一ITO层53以及所述第二ITO层55为所述液晶显示面板50的公共电极，所述第一ITO层53以及所述第二ITO层55的材质为ITO(氧化铟锡)。\n\n[0041]具体地，所述第二固定胶52以及所述第三固定胶56用于胶结所述液晶显示面板50中的光学元件的特种胶粘剂；所述第二固定胶52以及所述第三固定胶56优选为EVA(Polyethylene vinylacetate,聚乙烯-聚醋酸乙烯酯共聚物)胶。其中，EVA胶一种热固性有粘性的胶膜，用于放在夹胶玻璃中间。由于EVA胶膜在粘着力、耐久性、光学特性等方面具有的优越性，使得它被越来越广泛的应用于电流组件以及各种光学产品。\n\n[0042]本申请实施例所提供的背光模组及液晶显示装置，在背光盲孔中设置了环形Mini-LED灯带以及调光玻璃，使背光盲孔在提供器件空间同时能自由转换成背光源，进一步提升了全面屏的显示效果。\n\n[0043]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0044]以上对本申请实施例所提供的一种背光模组及液晶显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10724, 23778, '技术领域\n\n[0001]本发明涉及显示技术领域，特别是一种背光模组及显示装置。\n\n背景技术\n\n[0002]随着手机整体工艺设计能力提升，消费者审美观也在不断的被引导、被提升，因此手机屏幕整体趋势逐渐转换成全面屏设计方向。因此在覆晶薄膜(COF)、超窄边框、异性屏等显示屏中，全面屏相关指标的设计能力以及工艺能力在不到一年的时间内不断的提升，屏幕的屏占比也由80％逐渐提升到了97％。但随着以上能力的迅速提升，目前已经达到了相对瓶颈期，因此屏内挖孔技术应运而生，面内挖孔能进一步提升屏占比,用以提高整机的工艺设计美感。目前屏内挖孔技术为了提高面板的透光，一般将上下偏光片也设计挖孔，因此熄屏(待机状态)时屏下摄像头可见，这会影响显示屏的整体感。\n\n[0003]因此，现有技术将保留液晶、偏光片，但彩膜基板在通孔区并没有色阻的方案，这种方案保留了上下偏光片，可实现熄屏状态摄像头不可见。并采用了薄膜晶体管放在胶框边缘增大开口率，且通孔无色阻方案，可以尽量提高摄像头的进光量。但是，通孔区无色阻方案，无法正常显示RGB色彩画面；而且为了保证摄像头成像效果，彩膜基板侧就不能防止RGB色阻，因为RGB色阻会吸收光。\n\n[0004]因此本发明提供了一种背光模块以及显示装置，实现真正的全面屏技术。\n\n发明内容\n\n[0005]本发明所要解决的技术问题是，通过将基板拼接于反射片处，并且在所述基板与所述反射片的拼接处，由于所述反射层的高反射性，所以所述反射层可以有效的代替所述反射片的功能，进而保证了光的延展性，降低对组装精度的要求。\n\n[0006]为解决上述问题，本发明提供一种背光模组，包括：基板，所述基板上设有第一通孔；反射片，围绕所述基板而设；发光层，设置在所述基板上，所述发光层上设有与所述第一通孔对应的第二通孔；背光源，设于所述反射片的一端；导光板，设于所述反射片上。\n\n[0007]进一步地，所述基板与所述发光层之间设有反射层，所述反射层的材料为高反射白油。\n\n[0008]进一步地，所述导光板的面积大于或等于所述反射片的面积。\n\n[0009]进一步地，所述导光板与所述发光层并列设置，且部分所述导光板设置在所述反射层上。\n\n[0010]进一步地，所述导光板围绕所述反射层而设。\n\n[0011]进一步地，还包括：透明膜层，设于所述发光层以及所述反射层上，所述透明膜层的材料为硅胶；扩散膜，设于所述导光板远离所述反射片的一侧。\n\n[0012]进一步地，所述扩散膜设有对应所述第二通孔的第三通孔。\n\n[0013]进一步地，所述第三通孔的直径大于所述第二通孔的直径；所述第二通孔的直径等于所述第一通孔的直径。\n\n[0014]进一步地，所述发光层为MiniLed发光层，包括白光发光单元、红光发光单元、绿光发光单元以及蓝光发光单元。\n\n[0015]本发明还提供一种显示装置，包括前文所述的背光模组；所述显示装置还包括一摄像模块，设于所述背光模组的下方且对应所述第一通孔。\n\n[0016]本发明的有益效果是：本发明提供一种背光模组及显示装置，将MiniLED的基板拼接于反射片处，并且在所述基板与所述反射片的拼接处，由于所述反射层的高反射性，所以所述反射层可以有效的代替所述反射片的功能，进而保证了光的延展性，降低对组装精度的要求。另外在所述拼接处可以采用所述白光发光单元，利用MiniLED可以单独控制的特性实现不同位置MiniLED发光强弱差异，进而解决拼接处的黑边以及暗边现象，可以更好的实现全面屏幕显示，从而补偿所述背光模组因为挖孔而发光不均的现象。\n\n附图说明\n\n[0017]下面结合附图和实施例对本发明作进一步的描述。\n\n[0018]图1为本发明提供的第一实施例的显示装置的结构示意图；\n\n[0019]图2为本发明提供的第二实施例的显示装置的结构示意图。\n\n具体实施方式\n\n[0020]为了更好地理解本发明的内容，下面通过具体的实施例对本发明作进一步说明，但本发明的实施和保护范围不限于此。\n\n[0021]以下实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「顶」、「底」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。\n\n[0022]请参照图1所示，本发明第一实施例提供了一种背光模组100，所述背光模组100包括基板104、反射片101、导光板102、扩散膜103、反射层105、透明膜层109、背光源1011以及通孔107。\n\n[0023]所述基板104上设有第一通孔107；所述反射片101围绕所述基板104而设。\n\n[0024]所述发光层106设置在所述基板104上，所述发光层106上设有与所述第一通孔107对应的第二通孔110；所述发光层106为MiniLed发光层。\n\n[0025]所述背光源1011设于所述反射片101的一端。\n\n[0026]所述反射层105设于所述基板104与所述MiniLED发光单元106之间，所述反射层105的材料为高反射白油。\n\n[0027]所述导光板102设于所述反射片101上；所述扩散膜103设于所述导光板102远离所述反射片101的一侧。\n\n[0028]所述导光板102的面积大于所述反射片101的面积。这使得在进行基板104与反射片101拼接的时候，部分基板104可以设于所述导光板102下方。\n\n[0029]在制备的时候，将基板104不打件，因其覆盖高反射白油，与反射片101拼接后，拼接位置被导光板102覆盖，因为白油具有高反射了特性，可取代反射片101左右，可以保证光的延展性，降低对组装精度的要求。\n\n[0030]所述导光板102与所述发光层106并列设置，且部分所述导光板102设置在所述反射层105上。\n\n[0031]所述扩散膜103具有对应所述第二通孔110透光区11的第三通孔108。\n\n[0032]所述第三通孔108的直径大于所述第二通孔110的直径；所述第二通孔110的直径等于所述第一通孔107的直径。\n\n[0033]所述第一通孔107的直径与所述第三通孔108的直径的比值为6:5～2:1。所述基板104为透明基板。\n\n[0034]所述透明膜层109设于所述MiniLED发光单元106以及所述反射层105上，所述透明膜层109的材料为硅胶；所述背光源1011设于所述反射片101的侧边；\n\n[0035]在所述基板104与所述反射片101的拼接处，由于所述反射层105的高反射性，所以所述反射层105可以有效的代替所述反射片101的功能，进而保证了光的延展性，降低对组装精度的要求。\n\n[0036]所述MiniLED发光单元1061包括白光发光单元、红光发光单元、绿光发光单元以及蓝光发光单元。\n\n[0037]在拼接处，可以采用所述白光发光单元，利用MiniLED可以单独控制的特性实现不同位置MiniLED发光强弱差异，进而解决拼接处的黑边以及暗边现象，可以更好的实现全面屏幕显示，从而补偿所述背光模组100因为挖孔而发光不均的现象。\n\n[0038]在对应所述拼接的区域，可以采用所述红光发光单元、所述绿光发光单元以及所述蓝光发光单元进行画面显示，进而可以实现全面屏显示。\n\n[0039]本发明还提供一种显示装置10，如图1所示。所述显示装置10包括所述显示面板12、背光模组100以及摄像模块13，所述摄像模块13设于所述背光模组100下方且对应所述第一通孔117，所述显示面板12位于所述背光模组100上方。\n\n[0040]所述第一通孔117、第二通孔110以及第三通孔108进而可以组合一组合孔，使外部光线可以透过，被所述摄像模块接收。\n\n[0041]所述显示装置10将基板104与反射片拼接，并且在所述基板104与所述反射片101的拼接处，由于所述反射层105的高反射性，所以所述反射层105可以有效的代替所述反射片101的功能，进而保证了光的延展性，降低对组装精度的要求。另外在所述拼接处可以采用所述白光发光单元，利用MiniLED可以单独控制的特性实现不同位置MiniLED发光强弱差异，进而解决拼接处的黑边以及暗边现象，可以更好的实现全面屏幕显示，从而补偿所述背光模组100因为挖孔而发光不均的现象。\n\n[0042]请参照图2所示，本发明的第二实施例提供了一种背光模组100a，与前述第一实施例不同之处在于，所述基板104a拼接于导光板以及反射片。\n\n[0043]所述导光板102a的面积等于所述反射片101a的面积。所述导光板围绕所述反射层而设。\n\n[0044]更进一步地讲，相较于第一实施例而言，第二实施例中，在反射片101a与导光板102a开设拼接孔的时候，两个拼接孔大小相同，在进行开孔的时候要求精度降低，易于制作。\n\n[0045]应当指出，对于经充分说明的本发明来说，还可具有多种变换及改型的实施方案，并不局限于上述实施方式的具体实施例。上述实施例仅仅作为本发明的说明，而不是对本发明的限制。总之，本发明的保护范围应包括那些对于本领域普通技术人员来说显而易见的变换或替代以及改型。', '技术领域\n\n[0001]本发明涉及显示技术领域，特别是一种背光模组及显示装置。\n\n背景技术\n\n[0002]随着手机整体工艺设计能力提升，消费者审美观也在不断的被引导、被提升，因此手机屏幕整体趋势逐渐转换成全面屏设计方向。因此在覆晶薄膜(COF)、超窄边框、异性屏等显示屏中，全面屏相关指标的设计能力以及工艺能力在不到一年的时间内不断的提升，屏幕的屏占比也由80％逐渐提升到了97％。但随着以上能力的迅速提升，目前已经达到了相对瓶颈期，因此屏内挖孔技术应运而生，面内挖孔能进一步提升屏占比,用以提高整机的工艺设计美感。目前屏内挖孔技术为了提高面板的透光，一般将上下偏光片也设计挖孔，因此熄屏(待机状态)时屏下摄像头可见，这会影响显示屏的整体感。\n\n[0003]因此，现有技术将保留液晶、偏光片，但彩膜基板在通孔区并没有色阻的方案，这种方案保留了上下偏光片，可实现熄屏状态摄像头不可见。并采用了薄膜晶体管放在胶框边缘增大开口率，且通孔无色阻方案，可以尽量提高摄像头的进光量。但是，通孔区无色阻方案，无法正常显示RGB色彩画面；而且为了保证摄像头成像效果，彩膜基板侧就不能防止RGB色阻，因为RGB色阻会吸收光。\n\n[0004]因此本发明提供了一种背光模块以及显示装置，实现真正的全面屏技术。\n\n发明内容\n\n[0005]本发明所要解决的技术问题是，通过将基板拼接于反射片处，并且在所述基板与所述反射片的拼接处，由于所述反射层的高反射性，所以所述反射层可以有效的代替所述反射片的功能，进而保证了光的延展性，降低对组装精度的要求。\n\n[0006]为解决上述问题，本发明提供一种背光模组，包括：基板，所述基板上设有第一通孔；反射片，围绕所述基板而设；发光层，设置在所述基板上，所述发光层上设有与所述第一通孔对应的第二通孔；背光源，设于所述反射片的一端；导光板，设于所述反射片上。\n\n[0007]进一步地，所述基板与所述发光层之间设有反射层，所述反射层的材料为高反射白油。\n\n[0008]进一步地，所述导光板的面积大于或等于所述反射片的面积。\n\n[0009]进一步地，所述导光板与所述发光层并列设置，且部分所述导光板设置在所述反射层上。\n\n[0010]进一步地，所述导光板围绕所述反射层而设。\n\n[0011]进一步地，还包括：透明膜层，设于所述发光层以及所述反射层上，所述透明膜层的材料为硅胶；扩散膜，设于所述导光板远离所述反射片的一侧。\n\n[0012]进一步地，所述扩散膜设有对应所述第二通孔的第三通孔。\n\n[0013]进一步地，所述第三通孔的直径大于所述第二通孔的直径；所述第二通孔的直径等于所述第一通孔的直径。\n\n[0014]进一步地，所述发光层为MiniLed发光层，包括白光发光单元、红光发光单元、绿光发光单元以及蓝光发光单元。\n\n[0015]本发明还提供一种显示装置，包括前文所述的背光模组；所述显示装置还包括一摄像模块，设于所述背光模组的下方且对应所述第一通孔。\n\n[0016]本发明的有益效果是：本发明提供一种背光模组及显示装置，将MiniLED的基板拼接于反射片处，并且在所述基板与所述反射片的拼接处，由于所述反射层的高反射性，所以所述反射层可以有效的代替所述反射片的功能，进而保证了光的延展性，降低对组装精度的要求。另外在所述拼接处可以采用所述白光发光单元，利用MiniLED可以单独控制的特性实现不同位置MiniLED发光强弱差异，进而解决拼接处的黑边以及暗边现象，可以更好的实现全面屏幕显示，从而补偿所述背光模组因为挖孔而发光不均的现象。\n\n附图说明\n\n[0017]下面结合附图和实施例对本发明作进一步的描述。\n\n[0018]图1为本发明提供的第一实施例的显示装置的结构示意图；\n\n[0019]图2为本发明提供的第二实施例的显示装置的结构示意图。\n\n具体实施方式\n\n[0020]为了更好地理解本发明的内容，下面通过具体的实施例对本发明作进一步说明，但本发明的实施和保护范围不限于此。\n\n[0021]以下实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「顶」、「底」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。\n\n[0022]请参照图1所示，本发明第一实施例提供了一种背光模组100，所述背光模组100包括基板104、反射片101、导光板102、扩散膜103、反射层105、透明膜层109、背光源1011以及通孔107。\n\n[0023]所述基板104上设有第一通孔107；所述反射片101围绕所述基板104而设。\n\n[0024]所述发光层106设置在所述基板104上，所述发光层106上设有与所述第一通孔107对应的第二通孔110；所述发光层106为MiniLed发光层。\n\n[0025]所述背光源1011设于所述反射片101的一端。\n\n[0026]所述反射层105设于所述基板104与所述MiniLED发光单元106之间，所述反射层105的材料为高反射白油。\n\n[0027]所述导光板102设于所述反射片101上；所述扩散膜103设于所述导光板102远离所述反射片101的一侧。\n\n[0028]所述导光板102的面积大于所述反射片101的面积。这使得在进行基板104与反射片101拼接的时候，部分基板104可以设于所述导光板102下方。\n\n[0029]在制备的时候，将基板104不打件，因其覆盖高反射白油，与反射片101拼接后，拼接位置被导光板102覆盖，因为白油具有高反射了特性，可取代反射片101左右，可以保证光的延展性，降低对组装精度的要求。\n\n[0030]所述导光板102与所述发光层106并列设置，且部分所述导光板102设置在所述反射层105上。\n\n[0031]所述扩散膜103具有对应所述第二通孔110透光区11的第三通孔108。\n\n[0032]所述第三通孔108的直径大于所述第二通孔110的直径；所述第二通孔110的直径等于所述第一通孔107的直径。\n\n[0033]所述第一通孔107的直径与所述第三通孔108的直径的比值为6:5～2:1。所述基板104为透明基板。\n\n[0034]所述透明膜层109设于所述MiniLED发光单元106以及所述反射层105上，所述透明膜层109的材料为硅胶；所述背光源1011设于所述反射片101的侧边；\n\n[0035]在所述基板104与所述反射片101的拼接处，由于所述反射层105的高反射性，所以所述反射层105可以有效的代替所述反射片101的功能，进而保证了光的延展性，降低对组装精度的要求。\n\n[0036]所述MiniLED发光单元1061包括白光发光单元、红光发光单元、绿光发光单元以及蓝光发光单元。\n\n[0037]在拼接处，可以采用所述白光发光单元，利用MiniLED可以单独控制的特性实现不同位置MiniLED发光强弱差异，进而解决拼接处的黑边以及暗边现象，可以更好的实现全面屏幕显示，从而补偿所述背光模组100因为挖孔而发光不均的现象。\n\n[0038]在对应所述拼接的区域，可以采用所述红光发光单元、所述绿光发光单元以及所述蓝光发光单元进行画面显示，进而可以实现全面屏显示。\n\n[0039]本发明还提供一种显示装置10，如图1所示。所述显示装置10包括所述显示面板12、背光模组100以及摄像模块13，所述摄像模块13设于所述背光模组100下方且对应所述第一通孔117，所述显示面板12位于所述背光模组100上方。\n\n[0040]所述第一通孔117、第二通孔110以及第三通孔108进而可以组合一组合孔，使外部光线可以透过，被所述摄像模块接收。\n\n[0041]所述显示装置10将基板104与反射片拼接，并且在所述基板104与所述反射片101的拼接处，由于所述反射层105的高反射性，所以所述反射层105可以有效的代替所述反射片101的功能，进而保证了光的延展性，降低对组装精度的要求。另外在所述拼接处可以采用所述白光发光单元，利用MiniLED可以单独控制的特性实现不同位置MiniLED发光强弱差异，进而解决拼接处的黑边以及暗边现象，可以更好的实现全面屏幕显示，从而补偿所述背光模组100因为挖孔而发光不均的现象。\n\n[0042]请参照图2所示，本发明的第二实施例提供了一种背光模组100a，与前述第一实施例不同之处在于，所述基板104a拼接于导光板以及反射片。\n\n[0043]所述导光板102a的面积等于所述反射片101a的面积。所述导光板围绕所述反射层而设。\n\n[0044]更进一步地讲，相较于第一实施例而言，第二实施例中，在反射片101a与导光板102a开设拼接孔的时候，两个拼接孔大小相同，在进行开孔的时候要求精度降低，易于制作。\n\n[0045]应当指出，对于经充分说明的本发明来说，还可具有多种变换及改型的实施方案，并不局限于上述实施方式的具体实施例。上述实施例仅仅作为本发明的说明，而不是对本发明的限制。总之，本发明的保护范围应包括那些对于本领域普通技术人员来说显而易见的变换或替代以及改型。');
INSERT INTO `os_patent_instruction_text` VALUES (10725, 23779, '技术领域\n\n[0001]本申请涉及电子显示领域，尤其涉及一种透明显示面板和电子设备。\n\n背景技术\n\n[0002]随着显示技术的发展，透明显示屏在在商用领域得到了越来越多的应用。透明显示屏不仅具有显示功能，同时能够使用户看到位于屏幕后面的物体。同时，透明显示屏还能够融合触控技术和智能显示技术，具有展示、互动、广告等协同效果，极大的提升了消费者的使用体验。\n\n[0003]透明的液晶显示屏技术成熟且成本低廉，是主流的透明显示屏。但透明显示屏中的偏光片和彩膜层都会影响透明显示面板的透光效果，降低了透明显示面板的光线穿透率。\n\n发明内容\n\n[0004]为解决上述问题，本申请提供了一种透明显示面板，所述透明显示面板的透光率能达到50％以上。\n\n[0005]具体的，所述透明显示面板包括：\n\n[0006]第一透明基板、与所述第一透明基板相对设置的第二透明基板、设置第一透明基板下方的背光模组、设置在所述第一透明基板和第二透明基板之间的液晶层；其中：\n\n[0007]所述液晶层为聚合物分散液晶层；\n\n[0008]所述背光模组包括侧光源，所述测光源包括多个彩色背光单元。\n\n[0009]根据本申请的其中一个方面，每一个所述彩色背光单元包括多个微型发光二极管。\n\n[0010]根据本申请的其中一个方面，任意三个相邻设置的彩色背光单元分别为红色发光二极管、绿色发光二极管和蓝色发光二极管。\n\n[0011]根据本申请的其中一个方面，所述液晶层包括聚合物和在所述聚合物中均匀分布的多个液晶分子，所述多个液晶分子具有第一状态和第二状态；\n\n[0012]其中，所述多个液晶分子处于第一状态时，所述多个液晶分子的轴向与所述第一透明基板垂直；\n\n[0013]所述多个液晶分子处于第二状态时，所述多个液晶分子的轴向与所述第一透明基板平行。\n\n[0014]根据本申请的其中一个方面，所述透明显示面板还包括驱动电极，所述驱动电极分别位于所述第一透明基板和第二透明基板与所述液晶层相邻的表面上，当所述驱动电极接入驱动电压时，所述多个液晶分子处于第一状态；当所述驱动电极两端的电压为零时，所述多个液晶分子处于第二状态。\n\n[0015]根据本申请的其中一个方面，所述彩色背光单元的出光面与所述第一透明基板之间的夹角为第一夹角，所述第一夹角为钝角，所述彩色背光单元的出光面与所述第二透明基板之间的夹角为第二夹角，所述第二夹角为锐角。\n\n[0016]根据本申请的其中一个方面，所述彩色背光单元发出的光线在所述第二透明基板的第一出光面上的入射角等于所述第二夹角，所述第二夹角大于光线从所述第一出光面上射出时发生全反射的临界角。\n\n[0017]根据本申请的其中一个方面，所述第一出光面的反射光线在所述第一透明基板的第二出光面上的入射角等于所述第二夹角，所述第二夹角大于光线从所述第二出光面上射出时发生全反射的临界角。\n\n[0018]根据本申请的其中一个方面，所述第一透明基板和所述第二透明基板具有相同的厚度和材料。\n\n[0019]相应的，本申请还提供了一种电子设备，所述电子设备包括如前所述的透明显示面板。\n\n[0020]本申请使用彩色背光光源为透明显示面板的提供背光，代替了现有技术中的白色背光结构和彩膜层。同时，本申请使用统一配相的液晶分子作为显示显示面板的液晶层，代替了现有技术中的液晶分子和偏光片。因此，本申请的显示面板不需要设置偏光片和彩膜层即可实现正常的显示效果，消除了偏光片和彩膜层对光线的遮挡，极大的提高了透明显示面板的透光率，优化了透明显示屏的显示效果。\n\n附图说明\n\n[0021]图1为本申请的一个具体实施例中的透明显示面板处于第一状态时的结构示意图；\n\n[0022]图2为本申请的一个具体实施例中的透明显示面板处于第二状态时的结构示意图；\n\n[0023]图3为图1中的透明显示面板中的液晶分子的结构示意图；\n\n[0024]图4为图2中的透明显示面板中的液晶分子的结构示意图；\n\n[0025]图5为本申请的一个具体实施例中的透明显示面板的俯视图。\n\n具体实施方式\n\n[0026]以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。\n\n[0027]为解决上述问题，本申请提供了一种透明显示面板，所述透明显示面板的透光率能达到50％以上。\n\n[0028]具体的，参见图1和图5，所述透明显示面板包括：第一透明基板10、第二透明基板30、液晶层20以及背光模组40。所述第二透明基板与所述第一透明基板相对设置，所述背光模组设置在第一透明基板下方，所述液晶层设置在所述第一透明基板和第二透明基板之间。本实施例中，所述第一透明基板10为阵列基板，所述第二透明基板30为彩膜基板，所述液晶层为聚合物分散液晶层。所述背光模组包括侧光源，所述测光源包括多个彩色背光单元。\n\n[0029]本申请中，所述第一透明基板10中设置有多个子像素，每一个子像素包括一个开关元件和与所述开关元件连接的像素电极11。在本实施例中，所述开关元件为薄膜晶体管。所述薄膜晶体管的的源极与显示面板的数据线连接，栅极与显示面板的栅线连接，漏极与发光结构的像素电极连接。所述多个像素电极11沿第一方向排列成多行，沿第二方向排列成多列。参见图5，所述显示面板包括沿第一方向排列的多条数据线12和沿第二方向排列的多条栅极线13，每一个所述像素电极11通过与该电极连接的薄膜晶体管与所述数据线12和栅极线13电连接。所述多个像素电极11构成所述透明显示面板的多个像素点。\n\n[0030]参见图1和图2，所述第二透明基板30与所述第一透明基板10相对设置，所述第二透明基板30远离所述第一透明基板10的表面为第一出光面，所述第一透明基板10远离所述第二透明基板30的表面为第二出光面。所述液晶层20位于所述第一透明基板10和所述第二透明基板30之间，所述液晶层20包括多个统一配相的液晶分子。\n\n[0031]参加图1，所述背光模组40位于所述液晶层20的两个相对的侧面上，所述两个相对的侧面与所述出光面垂直。参见图5，所述背光模组40包括多个彩色背光单元，每一个所述彩色背光单元与一行驱动单元对应设置。每一个所述彩色背光单元包括多个微型发光二极管。通过将发光二极管的发光单元进行薄膜化、微小化和阵列化，可以得到微型发光二极管。单个微型发光二极管的尺寸在1微米到10微米之间，能够像有机发光二极管一样实现自发光功能。微型发光二极管的尺寸通常传统的背光光源的尺寸的1/100～1/50，不需要导光板和扩散板就能获得亮度均匀的背光。同时，在组装背光模组时，将微型发光二极管的出光面设置为与所述第一透明基板成锐角，与所述第二透明基板成钝角，可将背光光线直接投射到对应的像素点上二不需要设置反射片。\n\n[0032]在本申请中，作为液晶显示面板的背光光源时，所述多个发光单元需要分别发出红色、蓝色和绿色的光线以构成显示面板的像素点。\n\n[0033]本实施例中，参见图5，三个相邻设置的彩色背光单元分别为红色发光二极管41、绿色发光二极管42和蓝色发光二极管43。例如，与位于同一行的多个红色像素点对应微型发光二极管41发红光，与位于同一行的多个绿色像素点对应的微型发光二极管42发绿光，与位于同一行的多个蓝色发光二极管对应的一行微型发光二极管43发蓝光。位于同一列的三个相邻的不同颜色的像素电极构成一个像素单元。\n\n[0034]参见图3和图4，本申请中，所述液晶层20包括聚合物22和在所述聚合物22中均匀分布的多个液晶分子21，所述多个液晶分子21具有第一状态和第二状态。所述透明显示面板还包括驱动电极，所述驱动电极分别位于所述第一透明基板和第二透明基板与所述液晶层相邻的表面上。本实施例中，所述驱动电极包括位于第一透明基板上的像素电极和第二透明基板彩膜基板上的公共电极。当所述驱动电极接入驱动电压时，所述多个液晶分子处于第一状态；当所述驱动电极两端的电压为零时，所述多个液晶分子处于第二状态。\n\n[0035]本实施例中，所述背光模组40的出光面与所述第一透明基板10之间的夹角为第一夹角，所述第一夹角为钝角，所述背光模组40的出光面与所述第二透明基板30之间的夹角为第二夹角，所述第二夹角为锐角。所述背光模组40发出的光线在所述第二透明基板30的第一出光面上的入射角等于所述第二夹角，所述第二夹角大于光线从所述第一出光面上射出时发生全反射的临界角。所述第一出光面的反射光线在所述第一透明基板10的第二出光面上的入射角等于所述第二夹角，所述第二夹角大于光线从所述第二出光面上射出时发生全反射的临界角。\n\n[0036]参见图1和图3，所述多个液晶分子21处于第一状态时，所述多个液晶分子21的轴向与所述第一透明基板垂直。此时液晶分子21的折射率和聚合物22的折射率不匹配，光线在液晶层中发生漫反射，穿过所述第一透明基板10和第二透明基板30，实现显示功能。\n\n[0037]参见图2和图4，所述多个液晶分子21处于第二状态时，所述多个液晶分子21的轴向与所述第一透明基板平行。此时液晶分子21的折射率和聚合物22的折射率匹配，光线在液晶层中发生全反射，无法穿透所述第一透明基板10和第二透明基板30，实现透光功能。\n\n[0038]本申请中，为了确保所述第一透明基板10和第二透明基板30具有相同的全反射角，所述第一透明基板10和所述第二透明基板30具有相同的厚度和材料。\n\n[0039]本申请使用彩色背光光源为透明显示面板的提供背光，代替了现有技术中的白色背光结构和彩膜层。同时，本申请使用统一配相的液晶分子作为显示显示面板的液晶层，代替了现有技术中的液晶分子和偏光片。因此，本申请的显示面板不需要设置偏光片和彩膜层即可实现正常的显示效果，消除了偏光片和彩膜层对光线的遮挡，极大的提高了透明显示面板的透光率，优化了透明显示屏的显示效果。\n\n[0040]相应的，本申请还提供了一种电子设备，所述电子设备包括如前所述的透明显示面板。所述电子设备可以是透明展示柜或展示窗。\n\n[0041]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本申请涉及电子显示领域，尤其涉及一种透明显示面板和电子设备。\n\n背景技术\n\n[0002]随着显示技术的发展，透明显示屏在在商用领域得到了越来越多的应用。透明显示屏不仅具有显示功能，同时能够使用户看到位于屏幕后面的物体。同时，透明显示屏还能够融合触控技术和智能显示技术，具有展示、互动、广告等协同效果，极大的提升了消费者的使用体验。\n\n[0003]透明的液晶显示屏技术成熟且成本低廉，是主流的透明显示屏。但透明显示屏中的偏光片和彩膜层都会影响透明显示面板的透光效果，降低了透明显示面板的光线穿透率。\n\n发明内容\n\n[0004]为解决上述问题，本申请提供了一种透明显示面板，所述透明显示面板的透光率能达到50％以上。\n\n[0005]具体的，所述透明显示面板包括：\n\n[0006]第一透明基板、与所述第一透明基板相对设置的第二透明基板、设置第一透明基板下方的背光模组、设置在所述第一透明基板和第二透明基板之间的液晶层；其中：\n\n[0007]所述液晶层为聚合物分散液晶层；\n\n[0008]所述背光模组包括侧光源，所述测光源包括多个彩色背光单元。\n\n[0009]根据本申请的其中一个方面，每一个所述彩色背光单元包括多个微型发光二极管。\n\n[0010]根据本申请的其中一个方面，任意三个相邻设置的彩色背光单元分别为红色发光二极管、绿色发光二极管和蓝色发光二极管。\n\n[0011]根据本申请的其中一个方面，所述液晶层包括聚合物和在所述聚合物中均匀分布的多个液晶分子，所述多个液晶分子具有第一状态和第二状态；\n\n[0012]其中，所述多个液晶分子处于第一状态时，所述多个液晶分子的轴向与所述第一透明基板垂直；\n\n[0013]所述多个液晶分子处于第二状态时，所述多个液晶分子的轴向与所述第一透明基板平行。\n\n[0014]根据本申请的其中一个方面，所述透明显示面板还包括驱动电极，所述驱动电极分别位于所述第一透明基板和第二透明基板与所述液晶层相邻的表面上，当所述驱动电极接入驱动电压时，所述多个液晶分子处于第一状态；当所述驱动电极两端的电压为零时，所述多个液晶分子处于第二状态。\n\n[0015]根据本申请的其中一个方面，所述彩色背光单元的出光面与所述第一透明基板之间的夹角为第一夹角，所述第一夹角为钝角，所述彩色背光单元的出光面与所述第二透明基板之间的夹角为第二夹角，所述第二夹角为锐角。\n\n[0016]根据本申请的其中一个方面，所述彩色背光单元发出的光线在所述第二透明基板的第一出光面上的入射角等于所述第二夹角，所述第二夹角大于光线从所述第一出光面上射出时发生全反射的临界角。\n\n[0017]根据本申请的其中一个方面，所述第一出光面的反射光线在所述第一透明基板的第二出光面上的入射角等于所述第二夹角，所述第二夹角大于光线从所述第二出光面上射出时发生全反射的临界角。\n\n[0018]根据本申请的其中一个方面，所述第一透明基板和所述第二透明基板具有相同的厚度和材料。\n\n[0019]相应的，本申请还提供了一种电子设备，所述电子设备包括如前所述的透明显示面板。\n\n[0020]本申请使用彩色背光光源为透明显示面板的提供背光，代替了现有技术中的白色背光结构和彩膜层。同时，本申请使用统一配相的液晶分子作为显示显示面板的液晶层，代替了现有技术中的液晶分子和偏光片。因此，本申请的显示面板不需要设置偏光片和彩膜层即可实现正常的显示效果，消除了偏光片和彩膜层对光线的遮挡，极大的提高了透明显示面板的透光率，优化了透明显示屏的显示效果。\n\n附图说明\n\n[0021]图1为本申请的一个具体实施例中的透明显示面板处于第一状态时的结构示意图；\n\n[0022]图2为本申请的一个具体实施例中的透明显示面板处于第二状态时的结构示意图；\n\n[0023]图3为图1中的透明显示面板中的液晶分子的结构示意图；\n\n[0024]图4为图2中的透明显示面板中的液晶分子的结构示意图；\n\n[0025]图5为本申请的一个具体实施例中的透明显示面板的俯视图。\n\n具体实施方式\n\n[0026]以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。\n\n[0027]为解决上述问题，本申请提供了一种透明显示面板，所述透明显示面板的透光率能达到50％以上。\n\n[0028]具体的，参见图1和图5，所述透明显示面板包括：第一透明基板10、第二透明基板30、液晶层20以及背光模组40。所述第二透明基板与所述第一透明基板相对设置，所述背光模组设置在第一透明基板下方，所述液晶层设置在所述第一透明基板和第二透明基板之间。本实施例中，所述第一透明基板10为阵列基板，所述第二透明基板30为彩膜基板，所述液晶层为聚合物分散液晶层。所述背光模组包括侧光源，所述测光源包括多个彩色背光单元。\n\n[0029]本申请中，所述第一透明基板10中设置有多个子像素，每一个子像素包括一个开关元件和与所述开关元件连接的像素电极11。在本实施例中，所述开关元件为薄膜晶体管。所述薄膜晶体管的的源极与显示面板的数据线连接，栅极与显示面板的栅线连接，漏极与发光结构的像素电极连接。所述多个像素电极11沿第一方向排列成多行，沿第二方向排列成多列。参见图5，所述显示面板包括沿第一方向排列的多条数据线12和沿第二方向排列的多条栅极线13，每一个所述像素电极11通过与该电极连接的薄膜晶体管与所述数据线12和栅极线13电连接。所述多个像素电极11构成所述透明显示面板的多个像素点。\n\n[0030]参见图1和图2，所述第二透明基板30与所述第一透明基板10相对设置，所述第二透明基板30远离所述第一透明基板10的表面为第一出光面，所述第一透明基板10远离所述第二透明基板30的表面为第二出光面。所述液晶层20位于所述第一透明基板10和所述第二透明基板30之间，所述液晶层20包括多个统一配相的液晶分子。\n\n[0031]参加图1，所述背光模组40位于所述液晶层20的两个相对的侧面上，所述两个相对的侧面与所述出光面垂直。参见图5，所述背光模组40包括多个彩色背光单元，每一个所述彩色背光单元与一行驱动单元对应设置。每一个所述彩色背光单元包括多个微型发光二极管。通过将发光二极管的发光单元进行薄膜化、微小化和阵列化，可以得到微型发光二极管。单个微型发光二极管的尺寸在1微米到10微米之间，能够像有机发光二极管一样实现自发光功能。微型发光二极管的尺寸通常传统的背光光源的尺寸的1/100～1/50，不需要导光板和扩散板就能获得亮度均匀的背光。同时，在组装背光模组时，将微型发光二极管的出光面设置为与所述第一透明基板成锐角，与所述第二透明基板成钝角，可将背光光线直接投射到对应的像素点上二不需要设置反射片。\n\n[0032]在本申请中，作为液晶显示面板的背光光源时，所述多个发光单元需要分别发出红色、蓝色和绿色的光线以构成显示面板的像素点。\n\n[0033]本实施例中，参见图5，三个相邻设置的彩色背光单元分别为红色发光二极管41、绿色发光二极管42和蓝色发光二极管43。例如，与位于同一行的多个红色像素点对应微型发光二极管41发红光，与位于同一行的多个绿色像素点对应的微型发光二极管42发绿光，与位于同一行的多个蓝色发光二极管对应的一行微型发光二极管43发蓝光。位于同一列的三个相邻的不同颜色的像素电极构成一个像素单元。\n\n[0034]参见图3和图4，本申请中，所述液晶层20包括聚合物22和在所述聚合物22中均匀分布的多个液晶分子21，所述多个液晶分子21具有第一状态和第二状态。所述透明显示面板还包括驱动电极，所述驱动电极分别位于所述第一透明基板和第二透明基板与所述液晶层相邻的表面上。本实施例中，所述驱动电极包括位于第一透明基板上的像素电极和第二透明基板彩膜基板上的公共电极。当所述驱动电极接入驱动电压时，所述多个液晶分子处于第一状态；当所述驱动电极两端的电压为零时，所述多个液晶分子处于第二状态。\n\n[0035]本实施例中，所述背光模组40的出光面与所述第一透明基板10之间的夹角为第一夹角，所述第一夹角为钝角，所述背光模组40的出光面与所述第二透明基板30之间的夹角为第二夹角，所述第二夹角为锐角。所述背光模组40发出的光线在所述第二透明基板30的第一出光面上的入射角等于所述第二夹角，所述第二夹角大于光线从所述第一出光面上射出时发生全反射的临界角。所述第一出光面的反射光线在所述第一透明基板10的第二出光面上的入射角等于所述第二夹角，所述第二夹角大于光线从所述第二出光面上射出时发生全反射的临界角。\n\n[0036]参见图1和图3，所述多个液晶分子21处于第一状态时，所述多个液晶分子21的轴向与所述第一透明基板垂直。此时液晶分子21的折射率和聚合物22的折射率不匹配，光线在液晶层中发生漫反射，穿过所述第一透明基板10和第二透明基板30，实现显示功能。\n\n[0037]参见图2和图4，所述多个液晶分子21处于第二状态时，所述多个液晶分子21的轴向与所述第一透明基板平行。此时液晶分子21的折射率和聚合物22的折射率匹配，光线在液晶层中发生全反射，无法穿透所述第一透明基板10和第二透明基板30，实现透光功能。\n\n[0038]本申请中，为了确保所述第一透明基板10和第二透明基板30具有相同的全反射角，所述第一透明基板10和所述第二透明基板30具有相同的厚度和材料。\n\n[0039]本申请使用彩色背光光源为透明显示面板的提供背光，代替了现有技术中的白色背光结构和彩膜层。同时，本申请使用统一配相的液晶分子作为显示显示面板的液晶层，代替了现有技术中的液晶分子和偏光片。因此，本申请的显示面板不需要设置偏光片和彩膜层即可实现正常的显示效果，消除了偏光片和彩膜层对光线的遮挡，极大的提高了透明显示面板的透光率，优化了透明显示屏的显示效果。\n\n[0040]相应的，本申请还提供了一种电子设备，所述电子设备包括如前所述的透明显示面板。所述电子设备可以是透明展示柜或展示窗。\n\n[0041]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10726, 23780, '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种mini-LED背光模组及液晶显示面板。\n\n背景技术\n\n[0002]随着用户的要求不断提高，目前mini-LED背光模组发展速度迅猛。但是，目前世面上并没有成熟的驱动方法，常见驱动方法是采用LED与薄膜晶体管或者场效应晶体管串联的方式，通过控制薄膜晶体管的占空比调节来实现灰阶显示，也就是占空比的方法实现驱动。但是此种方法需要LED的发光亮度很高，因此需要的电流非常大，而且随着显示产品刷新频率不断提高，每一帧的现实时间就会不断减少，这样占空比驱动更难以实现多灰阶等级的现实。\n\n发明内容\n\n[0003]本申请实施例的目的是提供一种mini-LED背光模组及液晶显示面板，具有实现更多等级的灰阶控制的有益效果。\n\n[0004]本申请实施例提供了一种mini-LED背光模组，包括：\n\n[0005]一背板；\n\n[0006]多个LED发光单元，所述多个LED发光单元设置于所述背板上且呈矩形阵列分布；\n\n[0007]多个开关管，每一所述开关管的输入端接入驱动电压信号，控制端接入扫描电压信号，输出端与至少一个所述LED发光单元的输入端连接；\n\n[0008]多个光阀开关，其设置于所述多个发光单元上方，每一所述光阀开关分别与一所述LED发光单元相对以用于调节对应所述LED发光单元的发光面积；\n\n[0009]驱动控制模块，其用于控制输出扫描信号给每一所述开关管的控制端以及输出光栅控制信号给所述光阀开关，进而通过控制所述开关管的占空比以及与所述开关管所对应的LED发光单元的发光面积来调节所述LED发光单元的灰阶。\n\n[0010]在本申请所述的mini-LED背光模组中，所述驱动控制模块包括用于主控单元、光栅驱动单元、栅极驱动单元；\n\n[0011]所述主控单元用于根据待调节的LED发光单元的灰阶值计算出对应的占空比信息以及发光面积信息，并将所述占空比信息发送给所述栅极驱动单元，将所述发光面积信息发送给所述光栅驱动单元；\n\n[0012]所述光栅驱动单元与每一所述光阀开关分别连接，以分别根据所述发光面积信息控制对应光阀开关所对的LED发光单元的发光面积；\n\n[0013]所述栅极驱动单元与每一所述开关管的控制端分别连接，以分别根据所述占空比信息控制每一所述开关管的占空比。\n\n[0014]在本申请所述的mini-LED背光模组中，所述多个LED发光单元包括多个红色LED发光单元、多个绿色LED发光单元以及多个蓝色LED发光单元。\n\n[0015]在本申请所述的mini-LED背光模组中，每一所述开关管的输出端分别连接一个所述LED发光单元的输入端。\n\n[0016]在本申请所述的mini-LED背光模组中，所述背板包括多个呈矩形阵列分布的矩形区域，每一所述矩形区域内设置有多个所述LED发光单元，同一所述矩形区域内的LED发光单元与同一所述开关管的输出端连接。\n\n[0017]在本申请所述的mini-LED背光模组中，所述矩形区域包括多个呈阵列排布的矩形子区域，每一所述矩形子区域内设置有三个所述LED发光单元，三个所述LED发光单元包括一个红色LED发光单元、一个绿色LED发光单元以及一个蓝色LED发光单元。\n\n[0018]在本申请所述的mini-LED背光模组中，所述光阀开关包括固定光栅以及移动光栅，所述移动光栅与所述固定光栅局部相对，当所述固定光栅上电时，所述移动光栅在所述驱动控制模块的控制下水平移动以调整对应所述LED发光单元的发光面积。\n\n[0019]在本申请所述的mini-LED背光模组中，同一行LED发光单元所对的光阀开关的固定光栅依次连接形成一矩形的固定光栅区域。\n\n[0020]在本申请所述的mini-LED背光模组中，所述开关管为场效应薄膜晶体管。\n\n[0021]本申请实施例还提供一种液晶显示面板，包括上述任一所述的mini-LED背光模组。\n\n[0022]本申请实施例通过提供一种mini-LED背光模组，包括：一背板；多个LED发光单元，所述多个LED发光单元设置于所述背板上且呈矩形阵列分布；多个开关管，每一所述开关管的输入端接入驱动电压信号，控制端接入扫描电压信号，输出端与至少一个所述LED发光单元的输入端连接；多个光阀开关，其设置于所述多个发光单元上方，每一所述光阀开关分别与一所述LED发光单元相对以用于调节对应所述LED发光单元的发光面积；驱动控制模块，其用于控制输出扫描信号给每一所述开关管的控制端以及输出光栅控制信号给所述光阀开关，进而通过控制所述开关管的占空比以及与所述开关管所对应的LED发光单元的发光面积来调节所述LED发光单元的灰阶；从而实现从两个维度相结合的方式来调节灰阶，其调节范围更广，具有实现更多等级的灰阶控制的有益效果，可以提高显示质量。\n\n附图说明\n\n[0023]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0024]图1为本申请实施例的mini-LED背光模组的电路结构示意图。\n\n[0025]图2为本申请实施例的mini-LED背光模组的俯视结构图。\n\n[0026]图3为本申请实施例的mini-LED背光模组的层状结构图。\n\n具体实施方式\n\n[0027]下面详细描述本申请的实施方式，所述实施方式的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的，仅用于解释本申请，而不能理解为对本申请的限制。\n\n[0028]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0029]请参阅图1-图3，图1为本申请实施例的mini-LED背光模组的电路结构示意图。图2为本申请实施例的mini-LED背光模组的俯视结构图。图3为本申请实施例的mini-LED背光模组的层状结构图。\n\n[0030]在一些实施例中，该mini-LED背光模组，包括：一背板10、多个LED发光单元20、多个开关管30、多个光阀开关50以及驱动控制模块40。\n\n[0031]其中，该多个LED发光单元20设置于背板10上且呈矩形阵列分布；每一开关管30的输入端接入驱动电压信号，控制端接入扫描电压信号，输出端与至少一个LED发光单元20的输入端连接；该多个光阀开关50设置于多个发光单元20上方，每一光阀开关50分别与一LED发光单元20相对以用于调节对应LED发光单元20的发光面积；驱动控制模块40用于控制输出扫描信号给每一所述开关管30的控制端以及输出光栅控制信号给所述光阀开关50，进而通过控制所述开关管30的占空比以及与所述开关管30所对应的LED发光单元20的发光面积来调节所述LED发光单元的灰阶。\n\n[0032]具体地，在一些实施例中，该驱动控制模块40包括用于主控单元43、光栅驱动单元42以及栅极驱动单元41；光栅驱动单元42以及栅极驱动单元41分别与该主控单元43连接。主控单元43用于根据待调节的LED发光单元20的灰阶值计算出对应的占空比信息以及发光面积信息，并将占空比信息发送给栅极驱动单元42，将发光面积信息发送给光栅驱动单元42；光栅驱动单元42与每一光阀开关50分别连接，以分别根据发光面积信息控制对应光阀开关50所对的LED发光单元20的发光面积；栅极驱动单元41与每一开关管30的控制端分别连接，以分别根据占空比信息控制每一开关管30的占空比。\n\n[0033]其中，该光栅驱动单元42包括多个光栅驱动部，每一个光栅驱动部分别驱动一个光阀开关50。当然，可以理解地，该主控单元43、光栅驱动单元42以及栅极驱动单元41可以集成到一起，形成复合芯片。\n\n[0034]在一些实施例中，该多个LED发光单元20包括多个红色LED发光单元20a、多个绿色LED发光单元20b以及多个蓝色LED发光单元20c。\n\n[0035]在一些实施例中，每一开关管30的输出端分别连接一个LED发光单元20的输入端。\n\n[0036]在图2所示的实施例中，该背板10包括多个呈矩形阵列分布的矩形区域101，每一所述矩形区域101内设置有多个所述LED发光单元20，同一所述矩形区域内101的LED发光单元20与同一所述开关管30的输出端连接。\n\n[0037]更进一步地，该矩形区域101包括多个呈阵列排布的矩形子区域1011，每一矩形子区域1011内设置有三个所述LED发光单元20，三个所述LED发光单元20包括一个红色LED发光单元20a、一个绿色LED发光单元20b以及一个蓝色LED发光单元20c。\n\n[0038]其中，该光阀开关50包括固定光栅51以及移动光栅52，移动光栅52与所述固定光栅51局部相对，当所述固定光栅51上电时，所述移动光栅52在所述驱动控制模块40的控制下水平移动以调整对应所述LED发光单元20的发光面积。\n\n[0039]在一些实施例中，该位于同一行LED发光单元20所对的光阀开关50的固定光栅51依次连接形成一矩形的固定光栅区域。\n\n[0040]在一些实施例中，开关管30为场效应薄膜晶体管，当然，也可以采用其他开关三极管。\n\n[0041]工作时，主控单元43用于根据待调节的LED发光单元20的灰阶值计算出对应的占空比信息以及发光面积信息，并将占空比信息发送给栅极驱动单元42，将发光面积信息发送给光栅驱动单元42；光栅驱动单元42与每一光阀开关50分别连接，以分别根据发光面积信息控制对应光阀开关50所对的LED发光单元20的发光面积；栅极驱动单元41与每一开关管30的控制端分别连接，以分别根据占空比信息控制每一开关管30的占空比。\n\n[0042]其中，具体分配发光面积以及占空比对灰阶的调整权重时，根据预先设定的映射表，每一个灰阶值都对应一个具体的发光面积以及一个占空比，该每一个灰阶值都对应一个具体的发光面积以及一个占空比是通过多次实验得出的功耗与效果都最好的组合。\n\n[0043]本申请实施例通过提供一种mini-LED背光模组，包括：一背板；多个LED发光单元，所述多个LED发光单元设置于所述背板上且呈矩形阵列分布；多个开关管，每一所述开关管的输入端接入驱动电压信号，控制端接入扫描电压信号，输出端与至少一个所述LED发光单元的输入端连接；多个光阀开关，其设置于所述多个发光单元上方，每一所述光阀开关分别与一所述LED发光单元相对以用于调节对应所述LED发光单元的发光面积；驱动控制模块，其用于控制输出扫描信号给每一所述开关管的控制端以及输出光栅控制信号给所述光阀开关，进而通过控制所述开关管的占空比以及与所述开关管所对应的LED发光单元的发光面积来调节所述LED发光单元的灰阶；从而实现从两个维度相结合的方式来调节灰阶，其调节范围更广，具有实现更多等级的灰阶控制的有益效果，可以提高显示质量。\n\n[0044]本发明还提供了一种液晶显示面板，其包括上述任意实施例中的mini-LED背光模组以及显示面板。\n\n[0045]以上对本申请实施例提供的mini-LED背光模组及液晶显示面板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种mini-LED背光模组及液晶显示面板。\n\n背景技术\n\n[0002]随着用户的要求不断提高，目前mini-LED背光模组发展速度迅猛。但是，目前世面上并没有成熟的驱动方法，常见驱动方法是采用LED与薄膜晶体管或者场效应晶体管串联的方式，通过控制薄膜晶体管的占空比调节来实现灰阶显示，也就是占空比的方法实现驱动。但是此种方法需要LED的发光亮度很高，因此需要的电流非常大，而且随着显示产品刷新频率不断提高，每一帧的现实时间就会不断减少，这样占空比驱动更难以实现多灰阶等级的现实。\n\n发明内容\n\n[0003]本申请实施例的目的是提供一种mini-LED背光模组及液晶显示面板，具有实现更多等级的灰阶控制的有益效果。\n\n[0004]本申请实施例提供了一种mini-LED背光模组，包括：\n\n[0005]一背板；\n\n[0006]多个LED发光单元，所述多个LED发光单元设置于所述背板上且呈矩形阵列分布；\n\n[0007]多个开关管，每一所述开关管的输入端接入驱动电压信号，控制端接入扫描电压信号，输出端与至少一个所述LED发光单元的输入端连接；\n\n[0008]多个光阀开关，其设置于所述多个发光单元上方，每一所述光阀开关分别与一所述LED发光单元相对以用于调节对应所述LED发光单元的发光面积；\n\n[0009]驱动控制模块，其用于控制输出扫描信号给每一所述开关管的控制端以及输出光栅控制信号给所述光阀开关，进而通过控制所述开关管的占空比以及与所述开关管所对应的LED发光单元的发光面积来调节所述LED发光单元的灰阶。\n\n[0010]在本申请所述的mini-LED背光模组中，所述驱动控制模块包括用于主控单元、光栅驱动单元、栅极驱动单元；\n\n[0011]所述主控单元用于根据待调节的LED发光单元的灰阶值计算出对应的占空比信息以及发光面积信息，并将所述占空比信息发送给所述栅极驱动单元，将所述发光面积信息发送给所述光栅驱动单元；\n\n[0012]所述光栅驱动单元与每一所述光阀开关分别连接，以分别根据所述发光面积信息控制对应光阀开关所对的LED发光单元的发光面积；\n\n[0013]所述栅极驱动单元与每一所述开关管的控制端分别连接，以分别根据所述占空比信息控制每一所述开关管的占空比。\n\n[0014]在本申请所述的mini-LED背光模组中，所述多个LED发光单元包括多个红色LED发光单元、多个绿色LED发光单元以及多个蓝色LED发光单元。\n\n[0015]在本申请所述的mini-LED背光模组中，每一所述开关管的输出端分别连接一个所述LED发光单元的输入端。\n\n[0016]在本申请所述的mini-LED背光模组中，所述背板包括多个呈矩形阵列分布的矩形区域，每一所述矩形区域内设置有多个所述LED发光单元，同一所述矩形区域内的LED发光单元与同一所述开关管的输出端连接。\n\n[0017]在本申请所述的mini-LED背光模组中，所述矩形区域包括多个呈阵列排布的矩形子区域，每一所述矩形子区域内设置有三个所述LED发光单元，三个所述LED发光单元包括一个红色LED发光单元、一个绿色LED发光单元以及一个蓝色LED发光单元。\n\n[0018]在本申请所述的mini-LED背光模组中，所述光阀开关包括固定光栅以及移动光栅，所述移动光栅与所述固定光栅局部相对，当所述固定光栅上电时，所述移动光栅在所述驱动控制模块的控制下水平移动以调整对应所述LED发光单元的发光面积。\n\n[0019]在本申请所述的mini-LED背光模组中，同一行LED发光单元所对的光阀开关的固定光栅依次连接形成一矩形的固定光栅区域。\n\n[0020]在本申请所述的mini-LED背光模组中，所述开关管为场效应薄膜晶体管。\n\n[0021]本申请实施例还提供一种液晶显示面板，包括上述任一所述的mini-LED背光模组。\n\n[0022]本申请实施例通过提供一种mini-LED背光模组，包括：一背板；多个LED发光单元，所述多个LED发光单元设置于所述背板上且呈矩形阵列分布；多个开关管，每一所述开关管的输入端接入驱动电压信号，控制端接入扫描电压信号，输出端与至少一个所述LED发光单元的输入端连接；多个光阀开关，其设置于所述多个发光单元上方，每一所述光阀开关分别与一所述LED发光单元相对以用于调节对应所述LED发光单元的发光面积；驱动控制模块，其用于控制输出扫描信号给每一所述开关管的控制端以及输出光栅控制信号给所述光阀开关，进而通过控制所述开关管的占空比以及与所述开关管所对应的LED发光单元的发光面积来调节所述LED发光单元的灰阶；从而实现从两个维度相结合的方式来调节灰阶，其调节范围更广，具有实现更多等级的灰阶控制的有益效果，可以提高显示质量。\n\n附图说明\n\n[0023]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0024]图1为本申请实施例的mini-LED背光模组的电路结构示意图。\n\n[0025]图2为本申请实施例的mini-LED背光模组的俯视结构图。\n\n[0026]图3为本申请实施例的mini-LED背光模组的层状结构图。\n\n具体实施方式\n\n[0027]下面详细描述本申请的实施方式，所述实施方式的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的，仅用于解释本申请，而不能理解为对本申请的限制。\n\n[0028]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0029]请参阅图1-图3，图1为本申请实施例的mini-LED背光模组的电路结构示意图。图2为本申请实施例的mini-LED背光模组的俯视结构图。图3为本申请实施例的mini-LED背光模组的层状结构图。\n\n[0030]在一些实施例中，该mini-LED背光模组，包括：一背板10、多个LED发光单元20、多个开关管30、多个光阀开关50以及驱动控制模块40。\n\n[0031]其中，该多个LED发光单元20设置于背板10上且呈矩形阵列分布；每一开关管30的输入端接入驱动电压信号，控制端接入扫描电压信号，输出端与至少一个LED发光单元20的输入端连接；该多个光阀开关50设置于多个发光单元20上方，每一光阀开关50分别与一LED发光单元20相对以用于调节对应LED发光单元20的发光面积；驱动控制模块40用于控制输出扫描信号给每一所述开关管30的控制端以及输出光栅控制信号给所述光阀开关50，进而通过控制所述开关管30的占空比以及与所述开关管30所对应的LED发光单元20的发光面积来调节所述LED发光单元的灰阶。\n\n[0032]具体地，在一些实施例中，该驱动控制模块40包括用于主控单元43、光栅驱动单元42以及栅极驱动单元41；光栅驱动单元42以及栅极驱动单元41分别与该主控单元43连接。主控单元43用于根据待调节的LED发光单元20的灰阶值计算出对应的占空比信息以及发光面积信息，并将占空比信息发送给栅极驱动单元42，将发光面积信息发送给光栅驱动单元42；光栅驱动单元42与每一光阀开关50分别连接，以分别根据发光面积信息控制对应光阀开关50所对的LED发光单元20的发光面积；栅极驱动单元41与每一开关管30的控制端分别连接，以分别根据占空比信息控制每一开关管30的占空比。\n\n[0033]其中，该光栅驱动单元42包括多个光栅驱动部，每一个光栅驱动部分别驱动一个光阀开关50。当然，可以理解地，该主控单元43、光栅驱动单元42以及栅极驱动单元41可以集成到一起，形成复合芯片。\n\n[0034]在一些实施例中，该多个LED发光单元20包括多个红色LED发光单元20a、多个绿色LED发光单元20b以及多个蓝色LED发光单元20c。\n\n[0035]在一些实施例中，每一开关管30的输出端分别连接一个LED发光单元20的输入端。\n\n[0036]在图2所示的实施例中，该背板10包括多个呈矩形阵列分布的矩形区域101，每一所述矩形区域101内设置有多个所述LED发光单元20，同一所述矩形区域内101的LED发光单元20与同一所述开关管30的输出端连接。\n\n[0037]更进一步地，该矩形区域101包括多个呈阵列排布的矩形子区域1011，每一矩形子区域1011内设置有三个所述LED发光单元20，三个所述LED发光单元20包括一个红色LED发光单元20a、一个绿色LED发光单元20b以及一个蓝色LED发光单元20c。\n\n[0038]其中，该光阀开关50包括固定光栅51以及移动光栅52，移动光栅52与所述固定光栅51局部相对，当所述固定光栅51上电时，所述移动光栅52在所述驱动控制模块40的控制下水平移动以调整对应所述LED发光单元20的发光面积。\n\n[0039]在一些实施例中，该位于同一行LED发光单元20所对的光阀开关50的固定光栅51依次连接形成一矩形的固定光栅区域。\n\n[0040]在一些实施例中，开关管30为场效应薄膜晶体管，当然，也可以采用其他开关三极管。\n\n[0041]工作时，主控单元43用于根据待调节的LED发光单元20的灰阶值计算出对应的占空比信息以及发光面积信息，并将占空比信息发送给栅极驱动单元42，将发光面积信息发送给光栅驱动单元42；光栅驱动单元42与每一光阀开关50分别连接，以分别根据发光面积信息控制对应光阀开关50所对的LED发光单元20的发光面积；栅极驱动单元41与每一开关管30的控制端分别连接，以分别根据占空比信息控制每一开关管30的占空比。\n\n[0042]其中，具体分配发光面积以及占空比对灰阶的调整权重时，根据预先设定的映射表，每一个灰阶值都对应一个具体的发光面积以及一个占空比，该每一个灰阶值都对应一个具体的发光面积以及一个占空比是通过多次实验得出的功耗与效果都最好的组合。\n\n[0043]本申请实施例通过提供一种mini-LED背光模组，包括：一背板；多个LED发光单元，所述多个LED发光单元设置于所述背板上且呈矩形阵列分布；多个开关管，每一所述开关管的输入端接入驱动电压信号，控制端接入扫描电压信号，输出端与至少一个所述LED发光单元的输入端连接；多个光阀开关，其设置于所述多个发光单元上方，每一所述光阀开关分别与一所述LED发光单元相对以用于调节对应所述LED发光单元的发光面积；驱动控制模块，其用于控制输出扫描信号给每一所述开关管的控制端以及输出光栅控制信号给所述光阀开关，进而通过控制所述开关管的占空比以及与所述开关管所对应的LED发光单元的发光面积来调节所述LED发光单元的灰阶；从而实现从两个维度相结合的方式来调节灰阶，其调节范围更广，具有实现更多等级的灰阶控制的有益效果，可以提高显示质量。\n\n[0044]本发明还提供了一种液晶显示面板，其包括上述任意实施例中的mini-LED背光模组以及显示面板。\n\n[0045]以上对本申请实施例提供的mini-LED背光模组及液晶显示面板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10727, 23781, '【技术领域】\n\n[0001]本发明涉及显示技术领域，特别是涉及一种显示装置及其驱动方法。\n\n【背景技术】\n\n[0002]为了提高屏占比，各种类型的显示屏也在不断更新换代，从刘海屏到水滴屏、美人尖到后续出现的机械式摄像头，这些产品都是在不断探索高屏占比与前置摄像头的最佳适配方案。而近期出现的屏下摄像头的方案，将摄像头隐藏到屏幕下面，使得全面屏显示进入了一个新的阶段。\n\n[0003]然而，现有的屏下摄像头的方案，由于与摄像头对应位置的显示面板中未设置彩膜，导致在摄像头关闭时，该区域无法显示画面，降低了显示效果。\n\n[0004]因此，有必要提供一种显示装置及其驱动方法，以解决现有技术所存在的问题。\n\n【发明内容】\n\n[0005]本发明的目的在于提供一种显示装置及其驱动方法，能够提高显示效果。\n\n[0006]为解决上述技术问题，本发明提供一种显示装置，包括：\n\n[0007]显示屏，包括透光区域和显示区域；\n\n[0008]背光模块，其上设置有区域控制组件，所述区域控制组件的位置与所述透光区域的位置对应，所述区域控制组件包括三色灯和导光件；所述导光件设于所述三色灯的上方。\n\n[0009]本发明还提供一种显示装置的驱动方法，其中显示装置包括：\n\n[0010]显示屏，包括透光区域和显示区域；\n\n[0011]背光模块，其上设置有区域控制组件，所述区域控制组件的位置与所述透光区域的位置对应，所述区域控制组件包括三色灯和导光件；所述导光件设于所述三色灯的上方；\n\n[0012]所述方法包括：\n\n[0013]向所述显示区域输入多个图像数据单元，每一帧图像数据单元包括三帧相同的图像数据；\n\n[0014]点亮所述三色灯，其中所述三色灯中各种颜色的灯的点亮频率与所述图像数据单元中各帧图像数据的帧刷新频率一致，且所述三色灯中每一种颜色的灯的点亮时间与所述图像数据单元中各帧图像数据的输入时间一致。\n\n[0015]本发明的显示装置及其驱动方法，包括显示屏，包括透光区域和显示区域；背光模块，其上设置有区域控制组件，所述区域控制组件的位置与所述透光区域的位置对应，所述区域控制组件包括三色灯和导光件；所述导光件设于所述三色灯的上方；由于在透光区域设置三色灯，因而在摄像头不工作时可以通过控制三色灯，实现透光区域的画面显示，提高了显示效果。\n\n【附图说明】\n\n[0016]图1为本发明显示装置的第一种结构示意图；\n\n[0017]图2为本发明显示屏的俯视图；\n\n[0018]图3为本发明显示装置的第二种结构示意图；\n\n[0019]图4为本发明背光模块的俯视图；\n\n[0020]图5为本发明显示装置的第三种结构示意图；\n\n[0021]图6为本发明显示装置的时序图；\n\n[0022]图7为本发明显示屏的显示画面。\n\n【具体实施方式】\n\n[0023]以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。\n\n[0024]本申请的说明书和权利要求书及上述附图中的术语“第一”、“第二”等是用于区别不同对象，而不是用于描述特定顺序。此外，术语“包括”和“具有”以及它们任何变形，意图在于覆盖不排他的包含。\n\n[0025]请参照图1至图7，图1为本发明显示装置的第一种结构示意图。\n\n[0026]如图1和图2所示，本发明的显示装置包括显示屏10和背光模块20，显示屏10包括透光区域101和显示区域102。\n\n[0027]背光模块20上设置有区域控制组件30，所述区域控制组件30与所述透光区域101的位置对应，所述区域控制组件30包括三色灯31和导光件32；所述导光件32设于所述三色灯31的上方。在一实施方式中，为了进一步提高效果，所述三色灯31为三色灯环，所述导光件32为导光环。\n\n[0028]所述背光模块20包括背板(图中未示出)，所述背板上设置有凹槽211，所述区域控制组件30嵌于所述凹槽211内。当然，背光模块20的下方可设置有底座40，所述区域控制组件30的底部固定在底座40上。\n\n[0029]结合图3和图4，所述背板20包括第一子部21和第二子部22，所述第一子部21与所述显示区域102的位置对应，所述第二子部22与所述透光区域101的位置对应。\n\n[0030]在一实施方式中，所述第一子部上21设置有多个微型发光二极管23，也即与显示区域102对应的背光模块的结构包括背板以及设置背板上的多个微型发光二极管23。在另一实施方式中，所第一子部21上设置有导光板、光学膜片以及光源等部件，也即与显示区域102对应的背光模块的结构可为现有结构，与透光区域101对应的背光模块设置有区域控制组件30。\n\n[0031]如图5所示，所述显示装置还包括摄像头50，所述摄像头50的位置与所述透光区域101的位置对应，且所述透光区域101覆盖所述摄像头50。\n\n[0032]本发明还提供一种显示装置的驱动方法包括：\n\n[0033]S101、向所述显示区域输入多个图像数据单元，每一帧图像数据单元包括三帧相同的图像数据；\n\n[0034]如图6所示，向所述显示区域102输入多个图像数据单元201，每个图像数据单元201包括三帧相同的图像数据D1-D3。\n\n[0035]比如，每一帧图像数据包括红色数据R、绿色数据G以及蓝色数据B。其中201表示显示区域102输入的单个图像数据单元的波形，202表示透光区域101的等效显示图像的波形，203表示数据芯片输入的数据信号的波形，或者说显示区域102输入的数据信号的波形，数据信号包括红色数据R、绿色数据G以及蓝色数据B。\n\n[0036]S102、点亮所述三色灯，其中所述三色灯中各种颜色的灯的点亮频率与所述图像数据单元中各帧图像数据的帧刷新频率一致；且所述三色灯中每一种颜色的灯的点亮时间与所述图像数据单元中各帧图像数据的输入时间一致。\n\n[0037]例如，其中三色灯包括红、绿、蓝三种颜色的灯311-313，以红色灯为例，所述红色灯311的点亮频率与第一帧图像数据D1的帧刷新频率1/T1一致；也即所述红色灯311的点亮时段(R’的周期)与第一帧图像数据D1的周期T1一致；且所述红色灯311的点亮时间t0与第一帧图像数据D1的输入时间一致，也即两者同步输入。可以理解的，绿色灯312、和蓝色灯313的点亮方式与红色灯311的点亮方式相似。在一实施方式中，T1、T2、T3均相等，比如都等于8.33ms。\n\n[0038]所述三色灯中每种颜色的灯的点亮时长与对应帧的图像数据的显示时长一致。比如红色灯311的点亮时长T4与第一帧图像数据的显示时长(R’为高电平的时长)一致。比如绿色灯312的点亮时长T5与第二帧图像数据的显示时长(G’为高电平的时长)一致。比如蓝色灯313的点亮时长T5与第三帧图像数据的显示时长(B’为高电平的时长)一致。\n\n[0039]所述三色灯中每种颜色的灯的点亮时长大于对应帧的图像数据的输入时长。也即以红色数据为例，红色灯的点亮时长T2大于红色数据R的输入时长T7，仅在T7时段内输入红色数据R，在T7至T4时段内显示区域102维持当前的图像数据。蓝色数据B和绿色数据G与此类似。\n\n[0040]每种颜色的灯的点亮时长相等，也即红色灯311的点亮时长T4、绿色灯312的点亮时长T5、蓝色灯313的点亮时长T6相等。\n\n[0041]如图7所示，在3帧时间内透光区域101以外的显示区域发送相同的数据，让画面保持；透光区域101在3帧内依次点亮红色灯、绿色灯以及蓝色灯，进而显示3种颜色R’、G’、B’，通过人眼的视觉的短暂停留，将三帧区内的数据R’G’B’叠加形成一张完整的画面进而显示。\n\n[0042]图像数据单元的帧刷新频率比如为120hz，也即显示区域以8.33ms为周期同步发送RGB数据，但每三帧所发送的RGB数据相同，透光区域101以8.33ms的周期循环点亮三色灯中的每种颜色的灯，以显示R’、G’、B’三种颜色，也即显示红、绿、蓝三种颜色，通过人眼视觉的短暂停留，将R’G’B’数据叠加以实现画面的显示，图像叠加完成需要25ms，相当于三帧时间内更新一张完整的图片，其中帧刷新速率不限于120Hz。\n\n[0043]由于在透光区域设置三色灯，因而在摄像头不工作时可以通过控制三色灯，实现透光区域的画面显示，提高了显示效果。\n\n[0044]本发明的显示装置及其驱动方法，包括显示屏，包括透光区域和显示区域；背光模块，其上设置有区域控制组件，所述区域控制组件与所述透光区域的位置对应，所述区域控制组件包括三色灯和导光件；所述导光件设于所述三色灯的上方；由于在透光区域设置三色灯，因而在摄像头不工作时可以通过控制三色灯，实现透光区域的画面显示，提高了显示效果。\n\n[0045]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '【技术领域】\n\n[0001]本发明涉及显示技术领域，特别是涉及一种显示装置及其驱动方法。\n\n【背景技术】\n\n[0002]为了提高屏占比，各种类型的显示屏也在不断更新换代，从刘海屏到水滴屏、美人尖到后续出现的机械式摄像头，这些产品都是在不断探索高屏占比与前置摄像头的最佳适配方案。而近期出现的屏下摄像头的方案，将摄像头隐藏到屏幕下面，使得全面屏显示进入了一个新的阶段。\n\n[0003]然而，现有的屏下摄像头的方案，由于与摄像头对应位置的显示面板中未设置彩膜，导致在摄像头关闭时，该区域无法显示画面，降低了显示效果。\n\n[0004]因此，有必要提供一种显示装置及其驱动方法，以解决现有技术所存在的问题。\n\n【发明内容】\n\n[0005]本发明的目的在于提供一种显示装置及其驱动方法，能够提高显示效果。\n\n[0006]为解决上述技术问题，本发明提供一种显示装置，包括：\n\n[0007]显示屏，包括透光区域和显示区域；\n\n[0008]背光模块，其上设置有区域控制组件，所述区域控制组件的位置与所述透光区域的位置对应，所述区域控制组件包括三色灯和导光件；所述导光件设于所述三色灯的上方。\n\n[0009]本发明还提供一种显示装置的驱动方法，其中显示装置包括：\n\n[0010]显示屏，包括透光区域和显示区域；\n\n[0011]背光模块，其上设置有区域控制组件，所述区域控制组件的位置与所述透光区域的位置对应，所述区域控制组件包括三色灯和导光件；所述导光件设于所述三色灯的上方；\n\n[0012]所述方法包括：\n\n[0013]向所述显示区域输入多个图像数据单元，每一帧图像数据单元包括三帧相同的图像数据；\n\n[0014]点亮所述三色灯，其中所述三色灯中各种颜色的灯的点亮频率与所述图像数据单元中各帧图像数据的帧刷新频率一致，且所述三色灯中每一种颜色的灯的点亮时间与所述图像数据单元中各帧图像数据的输入时间一致。\n\n[0015]本发明的显示装置及其驱动方法，包括显示屏，包括透光区域和显示区域；背光模块，其上设置有区域控制组件，所述区域控制组件的位置与所述透光区域的位置对应，所述区域控制组件包括三色灯和导光件；所述导光件设于所述三色灯的上方；由于在透光区域设置三色灯，因而在摄像头不工作时可以通过控制三色灯，实现透光区域的画面显示，提高了显示效果。\n\n【附图说明】\n\n[0016]图1为本发明显示装置的第一种结构示意图；\n\n[0017]图2为本发明显示屏的俯视图；\n\n[0018]图3为本发明显示装置的第二种结构示意图；\n\n[0019]图4为本发明背光模块的俯视图；\n\n[0020]图5为本发明显示装置的第三种结构示意图；\n\n[0021]图6为本发明显示装置的时序图；\n\n[0022]图7为本发明显示屏的显示画面。\n\n【具体实施方式】\n\n[0023]以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。\n\n[0024]本申请的说明书和权利要求书及上述附图中的术语“第一”、“第二”等是用于区别不同对象，而不是用于描述特定顺序。此外，术语“包括”和“具有”以及它们任何变形，意图在于覆盖不排他的包含。\n\n[0025]请参照图1至图7，图1为本发明显示装置的第一种结构示意图。\n\n[0026]如图1和图2所示，本发明的显示装置包括显示屏10和背光模块20，显示屏10包括透光区域101和显示区域102。\n\n[0027]背光模块20上设置有区域控制组件30，所述区域控制组件30与所述透光区域101的位置对应，所述区域控制组件30包括三色灯31和导光件32；所述导光件32设于所述三色灯31的上方。在一实施方式中，为了进一步提高效果，所述三色灯31为三色灯环，所述导光件32为导光环。\n\n[0028]所述背光模块20包括背板(图中未示出)，所述背板上设置有凹槽211，所述区域控制组件30嵌于所述凹槽211内。当然，背光模块20的下方可设置有底座40，所述区域控制组件30的底部固定在底座40上。\n\n[0029]结合图3和图4，所述背板20包括第一子部21和第二子部22，所述第一子部21与所述显示区域102的位置对应，所述第二子部22与所述透光区域101的位置对应。\n\n[0030]在一实施方式中，所述第一子部上21设置有多个微型发光二极管23，也即与显示区域102对应的背光模块的结构包括背板以及设置背板上的多个微型发光二极管23。在另一实施方式中，所第一子部21上设置有导光板、光学膜片以及光源等部件，也即与显示区域102对应的背光模块的结构可为现有结构，与透光区域101对应的背光模块设置有区域控制组件30。\n\n[0031]如图5所示，所述显示装置还包括摄像头50，所述摄像头50的位置与所述透光区域101的位置对应，且所述透光区域101覆盖所述摄像头50。\n\n[0032]本发明还提供一种显示装置的驱动方法包括：\n\n[0033]S101、向所述显示区域输入多个图像数据单元，每一帧图像数据单元包括三帧相同的图像数据；\n\n[0034]如图6所示，向所述显示区域102输入多个图像数据单元201，每个图像数据单元201包括三帧相同的图像数据D1-D3。\n\n[0035]比如，每一帧图像数据包括红色数据R、绿色数据G以及蓝色数据B。其中201表示显示区域102输入的单个图像数据单元的波形，202表示透光区域101的等效显示图像的波形，203表示数据芯片输入的数据信号的波形，或者说显示区域102输入的数据信号的波形，数据信号包括红色数据R、绿色数据G以及蓝色数据B。\n\n[0036]S102、点亮所述三色灯，其中所述三色灯中各种颜色的灯的点亮频率与所述图像数据单元中各帧图像数据的帧刷新频率一致；且所述三色灯中每一种颜色的灯的点亮时间与所述图像数据单元中各帧图像数据的输入时间一致。\n\n[0037]例如，其中三色灯包括红、绿、蓝三种颜色的灯311-313，以红色灯为例，所述红色灯311的点亮频率与第一帧图像数据D1的帧刷新频率1/T1一致；也即所述红色灯311的点亮时段(R’的周期)与第一帧图像数据D1的周期T1一致；且所述红色灯311的点亮时间t0与第一帧图像数据D1的输入时间一致，也即两者同步输入。可以理解的，绿色灯312、和蓝色灯313的点亮方式与红色灯311的点亮方式相似。在一实施方式中，T1、T2、T3均相等，比如都等于8.33ms。\n\n[0038]所述三色灯中每种颜色的灯的点亮时长与对应帧的图像数据的显示时长一致。比如红色灯311的点亮时长T4与第一帧图像数据的显示时长(R’为高电平的时长)一致。比如绿色灯312的点亮时长T5与第二帧图像数据的显示时长(G’为高电平的时长)一致。比如蓝色灯313的点亮时长T5与第三帧图像数据的显示时长(B’为高电平的时长)一致。\n\n[0039]所述三色灯中每种颜色的灯的点亮时长大于对应帧的图像数据的输入时长。也即以红色数据为例，红色灯的点亮时长T2大于红色数据R的输入时长T7，仅在T7时段内输入红色数据R，在T7至T4时段内显示区域102维持当前的图像数据。蓝色数据B和绿色数据G与此类似。\n\n[0040]每种颜色的灯的点亮时长相等，也即红色灯311的点亮时长T4、绿色灯312的点亮时长T5、蓝色灯313的点亮时长T6相等。\n\n[0041]如图7所示，在3帧时间内透光区域101以外的显示区域发送相同的数据，让画面保持；透光区域101在3帧内依次点亮红色灯、绿色灯以及蓝色灯，进而显示3种颜色R’、G’、B’，通过人眼的视觉的短暂停留，将三帧区内的数据R’G’B’叠加形成一张完整的画面进而显示。\n\n[0042]图像数据单元的帧刷新频率比如为120hz，也即显示区域以8.33ms为周期同步发送RGB数据，但每三帧所发送的RGB数据相同，透光区域101以8.33ms的周期循环点亮三色灯中的每种颜色的灯，以显示R’、G’、B’三种颜色，也即显示红、绿、蓝三种颜色，通过人眼视觉的短暂停留，将R’G’B’数据叠加以实现画面的显示，图像叠加完成需要25ms，相当于三帧时间内更新一张完整的图片，其中帧刷新速率不限于120Hz。\n\n[0043]由于在透光区域设置三色灯，因而在摄像头不工作时可以通过控制三色灯，实现透光区域的画面显示，提高了显示效果。\n\n[0044]本发明的显示装置及其驱动方法，包括显示屏，包括透光区域和显示区域；背光模块，其上设置有区域控制组件，所述区域控制组件与所述透光区域的位置对应，所述区域控制组件包括三色灯和导光件；所述导光件设于所述三色灯的上方；由于在透光区域设置三色灯，因而在摄像头不工作时可以通过控制三色灯，实现透光区域的画面显示，提高了显示效果。\n\n[0045]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10728, 23782, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示装置及显示装置的制作方法。\n\n背景技术\n\n[0002]目前，显示技术的发展趋势有大尺寸、超薄、高清、窄边框、和可柔性等。伴随着显示屏幕的需求更多，多种新型显示技术应运而生，尤其是有机发光二极管(Organic Light-Emitting Diode,OLED)、微发光二极管(MicroLED)以及量子点技术，在降低功耗方面具有明显优势，是显示技术的一大发展趋势。但是，采用OLED的显示屏幕容易出现烧屏现象。与OLED相比，MicroLED采用无机半导体作为发光材料，材料的稳定性更好，器件寿命更久，同时可以更薄、更省电，亮度、屏幕相应时间、解析度和显示效果也都要优于OLED。\n\n[0003]作为一种新技术，MicroLED的工艺难度以及成本都还太高，尤其是转移LED芯片时所需的“巨量转移”技术。实现MicroLED全彩化的方案有两种，一种是将大量的红绿蓝三种颜色的微型LED转移到相应位置；另一种是只转移蓝光LED，红色和绿色像素则采用量子点搭配蓝光LED。后者大大减少了工艺难度，并且解决了红色MicroLED寿命不佳的缺点，并且量子点作为光转换材料，具有制备工艺简单、光谱可调和发光峰窄的优势，可以扩展MicroLED的色域。然而蓝光LED激发量子点材料，在能量转移的过程中，不可避免会存在大量的能量损失，如LED自身波导效应损失，量子点产生的光散射效应等，以及量子点材料自身的自吸收现象，使得光致光发光过程中的光损失过多，导致光的利用率不高。\n\n[0004]综上所述，现有MicroLED显示装置存在光致发光过程中光损失过多导致光利用率不高的问题。故，有必要提供一种显示装置及显示装置的制作方法来改善这一缺陷。\n\n发明内容\n\n[0005]本揭示实施例提供一种显示装置及显示装置的制作方法，用于解决现有MicroLED显示装置存在光致发光过程中光损失过多导致光利用率不高的问题。\n\n[0006]本揭示实施例提供一种显示装置，包括：\n\n[0007]阵列基板；\n\n[0008]微发光二极管器件，阵列排布于所述阵列基板上，所述微发光二极管器件远离所述阵列基板一侧的表面设有多个向所述微发光二极管器件内部凹陷的微腔结构；以及\n\n[0009]量子点膜层，设置于所述微发光二极管器件远离所述阵列基板的一侧上，并填充所述微腔结构。\n\n[0010]根据本揭示一实施例，所述微腔结构的底面形状包括矩形、圆形或椭圆形，多个所述微腔结构在所述微发光二极管器件远离所述阵列基板一侧的表面连续排布。\n\n[0011]根据本揭示一实施例，所述微发光二极管器件包括蓝色微发光二极管器件，所述量子点膜层包括红色量子点膜层和绿色量子点膜层。\n\n[0012]根据本揭示一实施例，所述量子点膜层的材料包括含有量子点的光固化性材料。\n\n[0013]根据本揭示一实施例，相邻所述微发光二极管器件之间设有第一挡墙，所述第一挡墙将相邻的所述微发光二极管器件以及相邻的所述量子点膜层隔开。\n\n[0014]根据本揭示一实施例，所述第一挡墙在垂直于所述阵列基板的方向上的高度大于所述微发光二极管器件的高度。\n\n[0015]根据本揭示一实施例，所述显示装置还包括与所述阵列基板相对设置的第二基板，所述第二基板靠近所述阵列基板的一侧设有彩色滤光层，所述彩色滤光层包括多个与所述微发光二极管以及所述量子点膜层一一对应的色阻。\n\n[0016]根据本揭示一实施例，所述玻璃基板靠近所述阵列基板一侧还设有第二挡墙，所述第二挡墙设置于相邻所述色阻之间。\n\n[0017]本揭示实施例提供一种显示装置的制作方法，包括：\n\n[0018]提供发光二极管基板，包括基底和位于所述基底上的发光二极管膜层，在所述发光二极管膜层表面上涂布压印胶；\n\n[0019]将压印模具压入所述压印胶，紫外线固化后，取出所述压印模具，形成压印层；\n\n[0020]刻蚀去除所述压印层，在所述发光二极管膜层表面上形成压印胶图案；\n\n[0021]对所述发光二极管膜层远离所述基底一侧表面进行刻蚀，形成多个间隔排布并向所述发光二极管膜层内部凹陷的微腔结构；\n\n[0022]去除位于所述发光二极管膜层表面的所述压印胶图案；以及\n\n[0023]将所述发光二极管基板切割形成单个的微发光二极管器件。\n\n[0024]根据本揭示一实施例，所述制作方法还包括：\n\n[0025]提供衬底基板，在所述衬底基板上形成薄膜晶体管驱动阵列；\n\n[0026]在所述衬底基板上涂布黑色光阻，覆盖掩膜板，紫外线固化后，去除残余光阻材料，形成图案化的第一挡墙；以及\n\n[0027]将所述微发光二极管器件转移至所述衬底基板上。\n\n[0028]本揭示实施例的有益效果：本揭示实施例通过在微发光二极管器件远离阵列基板一侧的表面设置多个向微发光二极管器件内部凹陷的微腔结构，并通过设置于微发光二极管器件上的量子点膜层填充进微腔结构，将量子点分散到微发光二极管器件表面上的各个微腔结构中，防止量子点的聚集，同时又将量子点限制在微发光二极管器件内部，包含有量子点的多个微腔结构可以增强微发光二极管器件与量子点之间的能量转移效应，减少光致发光过程中产生的光损失，提高光的利用率。\n\n附图说明\n\n[0029]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是揭示的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0030]图1为本揭示实施例一提供的显示装置的截面结构示意图；\n\n[0031]图2为本揭示实施例二提供的显示装置的截面结构示意图；\n\n[0032]图3A为本揭示实施例三提供的发光二极管基板的结构示意图；\n\n[0033]图3B为本揭示实施例三提供的发光二极管基板的结构示意图；\n\n[0034]图3C为本揭示实施例三提供的发光二极管基板的结构示意图；\n\n[0035]图3D为本揭示实施例三提供的发光二极管基板的结构示意图；\n\n[0036]图3E为本揭示实施例三提供的发光二极管基板的结构示意图；\n\n[0037]图3F为本揭示实施例三提供的微发光二极管器件的结构示意图；\n\n[0038]图4A为本揭示实施例三提供的阵列基板的结构示意图；\n\n[0039]图4B为本揭示实施例三提供的阵列基板的结构示意图；\n\n[0040]图4C为本揭示实施例三提供的阵列基板的结构示意图；\n\n[0041]图4D为本揭示实施例三提供的阵列基板的结构示意图。\n\n具体实施方式\n\n[0042]以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。\n\n[0043]下面结合附图和具体实施例对本揭示做进一步的说明。\n\n[0044]实施例一：\n\n[0045]本揭示实施例提供一种显示装置，下面结合图1进行详细说明。\n\n[0046]如图1所示，图1为本揭示实施例提供的显示装置100的截面结构示意图，所述显示装置100包括阵列基板110、微发光二极管器件120以及量子点膜层。所述阵列基板110上设有像素驱动电路(图中未示出)，所述微发光二极管器件120阵列排布于所述阵列基板110上，所述微发光二极管器件120远离所述阵列基板110一侧的表面设有多个向所述微发光二极管器件120内部凹陷的微腔结构121。\n\n[0047]优选的，所述微腔结构121的底面形状包括矩形、圆形或椭圆形。在一些实施例中，所述微腔结构121的底面形状还可以根据实际需求调整为其他形状，此处不做限制。多个所述微腔结构121在所述微发光二极管器件120远离所述阵列基板110一侧的表面连续排布。\n\n[0048]如图1所示，所述量子点膜层设置于所述微发光二极管器件120远离所述阵列基板110的一侧上，并填充所述微腔结构121。利用相互隔开的微腔结构121将量子点膜层中的量子点分散到微发光二极管器件表面上的各个微腔结构中，防止量子点的聚集，同时又将量子点限制在微发光二极管器件内部，包含有量子点的多个微腔结构可以增强微发光二极管器件与量子点之间的能量转移效应，减少光致发光过程中产生的光损失，提高光的利用率。\n\n[0049]具体地，微发光二极管器件120为蓝色微发光二极管器件，所述量子点膜层包括红色量子点膜层122和绿色量子点膜层123，所述量子点膜层并未覆盖全部所述微发光二极管器件120。其中，蓝色微发光二极管器件120自身发出蓝色光，若设置于阵列基板110的蓝色子像素区域内，则不用在其上设置任何量子点膜层。红色量子点膜层122和绿色量子点膜层123对蓝色微发光二极管器件发出的蓝光具有转换作用。若设置于红色子像素区域，则覆盖红色量子点膜层122，微发光二极管器件120发出的蓝光经过红色量子点膜层122，转变为红光；若设置于绿色子像素区域，则覆盖绿色量子点膜层123，微发光二极管器件120发出的蓝光经过绿色量子点膜层123，转变为绿光，从而在阵列基板110上形成红、绿、蓝三像素的转换，实现显示装置100的全彩化显示。\n\n[0050]优选的，所述量子点膜层的材料包括含有量子点的光固化性材料。\n\n[0051]如图1所示，相邻所述微发光二极管器件120之间还设有第一挡墙130，所述第一挡墙130环绕各微发光二极管器件120四周，以将相邻所述微发光二极管器件120隔开，同时，还将位于微发光二极管器件120上方相邻的所述量子点膜层隔开，防止微发光二极管120发出的光线串扰到相邻微发光二极管器件120，造成显示装置100的显示不良。\n\n[0052]优选的，所述第一挡墙130的材料与本领域中常用的黑色光阻材料相同。同时，为减弱光的串扰，提高第一挡墙130的屏蔽效果，所述第一挡墙130在垂直于所述阵列基板110的方向上的高度应大于所述微发光二极管器件120的高度。\n\n[0053]在本揭示实施例中，所述阵列基板110上还设有封装层(图中未示出)，所述封装层覆盖所述微发光二极管器件120以及所述第一挡墙130，并向所述阵列基板110的边缘延伸，以防止所述阵列基板上的像素驱动电路和微发光二极管器件120等显示器件受到水汽和氧气的侵蚀。\n\n[0054]本揭示实施例的有益效果：本揭示实施例通过在微发光二极管器件远离阵列基板一侧的表面设置多个向微发光二极管器件内部凹陷的微腔结构，并通过设置于微发光二极管器件上的量子点膜层填充进微腔结构，将量子点分散到微发光二极管器件表面上的各个微腔结构中，防止量子点的聚集，同时又将量子点限制在微发光二极管器件内部，包含有量子点的多个微腔结构可以增强微发光二极管器件与量子点之间的能量转移效应，减少光致发光过程中产生的光损失，提高光的利用率。\n\n[0055]实施例二：\n\n[0056]本揭示实施例提供一种显示装置200，下面结合图2进行详细说明。\n\n[0057]如图2所示，图2为本揭示实施例提供的显示装置200的截面结构示意图，所述显示装置200包括阵列基板210、微发光二极管器件220以及量子点膜层。所述阵列基板210上设有像素驱动电路(图中未示出)，所述微发光二极管器件220阵列排布于所述阵列基板210上，所述微发光二极管器件220远离所述阵列基板210一侧的表面设有多个向所述微发光二极管器件220内部凹陷的微腔结构221。\n\n[0058]优选的，所述微腔结构221的底面形状包括矩形、圆形或椭圆形。在一些实施例中，所述微腔结构221的底面形状还可以根据实际需求调整为其他形状，此处不做限制。多个所述微腔结构221在所述微发光二极管器件220远离所述阵列基板210一侧的表面连续排布。\n\n[0059]如图2所示，所述量子点膜层设置于所述微发光二极管器件220远离所述阵列基板210的一侧上，并填充所述微腔结构221。利用相互隔开的微腔结构221将量子点膜层中的量子点分散到微发光二极管器件表面上的各个微腔结构中，防止量子点的聚集，同时又将量子点限制在微发光二极管器件内部，包含有量子点的多个微腔结构可以增强微发光二极管器件与量子点之间的能量转移效应，减少光致发光过程中产生的光损失，提高光的利用率。\n\n[0060]具体地，微发光二极管器件220为蓝色微发光二极管器件，所述量子点膜层包括红色量子点膜层222和绿色量子点膜层223，所述量子点膜层并未覆盖全部所述微发光二极管器件220。其中，蓝色微发光二极管器件220自身发出蓝色光，若设置于阵列基板210的蓝色子像素区域内，则不用在其上设置任何量子点膜层。红色量子点膜层222和绿色量子点膜层223对蓝色微发光二极管器件发出的蓝光具有转换作用。若设置于红色子像素区域，则覆盖红色量子点膜层222，微发光二极管器件220发出的蓝光经过红色量子点膜层222，转变为红光；若设置于绿色子像素区域，则覆盖绿色量子点膜层223，微发光二极管器件220发出的蓝光经过绿色量子点膜层223，转变为绿光，从而在阵列基板210上形成红、绿、蓝三像素的转换，实现显示装置200的全彩化显示。\n\n[0061]优选的，所述量子点膜层的材料包括含有量子点的光固化性材料。\n\n[0062]如图2所示，相邻所述微发光二极管器件220之间还设有第一挡墙230，所述第一挡墙230环绕各微发光二极管器件220四周，以将相邻所述微发光二极管器件220隔开，同时，还将位于微发光二极管器件220上方相邻的所述量子点膜层隔开，防止微发光二极管220发出的光线串扰到相邻微发光二极管器件220，造成显示装置200的显示不良。\n\n[0063]优选的，所述第一挡墙230的材料与本领域中常用的黑色光阻材料相同。同时，为减弱光的串扰，提高第一挡墙230的屏蔽效果，所述第一挡墙230在垂直于所述阵列基板210的方向上的高度应大于所述微发光二极管器件220的高度。\n\n[0064]如图2所示，在本揭示实施例中，所述显示装置200还包括与所述阵列基板210相对设置的第二基板240，所述第二基板240靠近所述阵列基板210的一侧设有彩色滤光层，所述彩色滤光层包括多个与所述微发光二极管器件220以及所述量子点膜层一一对应的色阻，所述阵列基板210与所述第二基板240之间通过封装框胶250密封贴合。\n\n[0065]具体地，所述色阻包括蓝色色阻241、红色色阻242和绿色色阻243，所述蓝色色阻241对应未覆盖量子点膜层的蓝色微发光二极管器件，红色色阻242对应红色量子点膜层222，绿色色阻243对应绿色量子点膜层223。通过在阵列基板相对侧设置彩色滤光层，以转化未被量子点膜层吸收的蓝光，从而提高显示装置200的显示效果。\n\n[0066]优选的，所述玻璃基板240靠近所述阵列基板210一侧还设有第二挡墙244，所述第二挡墙244设置于相邻所述色阻之间，并包围所述各色阻四周，以隔开所述色阻，从而防止对应微发光二极管器件220发出的光线串扰到相邻色阻，影响显示装置200的显示效果。\n\n[0067]本揭示实施例的有益效果：本揭示实施例通过在微发光二极管器件远离阵列基板一侧的表面设置多个向微发光二极管器件内部凹陷的微腔结构，并通过设置于微发光二极管器件上的量子点膜层填充进微腔结构，将量子点分散到微发光二极管器件表面上的各个微腔结构中，防止量子点的聚集，同时又将量子点限制在微发光二极管器件内部，包含有量子点的多个微腔结构可以增强微发光二极管器件与量子点之间的能量转移效应，减少光致发光过程中产生的光损失，提高光的利用率。\n\n[0068]实施例三：\n\n[0069]本揭示实施例提供一种显示装置的制作方法，下面结合图3A至图4D进行详细说明。\n\n[0070]如图3A至3F所示，图3A至3E均为本揭示实施例提供的发光二极管基板的截面结构示意图，图3F为微发光二极管器件的结构示意图，所述制作方法包括：\n\n[0071]步骤S10：如图3A所示，提供发光二极管基板，包括基底310和位于所述基底310上的发光二极管膜层320，在所述发光二极管膜层320表面涂布压印胶330；其中，所述压印胶330为纳米压印胶。\n\n[0072]步骤S20：如图3A和3B所示，将压印模具340沿箭头所示方向压入所述压印胶330，紫外线固化后，取出所述压印模具340，被所述压印模具340所压印的部分形成如图3C所示的压印层331；其中，所述压印模具340为纳米压印模具。\n\n[0073]步骤S30：刻蚀去除所述压印331，在所述发光二极管膜层320表面上形成如图3D所示的压印胶图案332。\n\n[0074]步骤S40：对所述发光二极管膜层320远离所述基底310一侧表面进行刻蚀，形成如图3E所示的多个间隔排布并向所述发光二极管膜层320内部凹陷的微腔结构321；所述压印胶图案332可作为本步骤中的掩膜板，刻蚀所述发光二极管膜层320的方法包括电感祸合等离子体刻蚀或者反应离子束刻蚀。\n\n[0075]步骤S50：去除位于所述发光二极管膜层320表面的所述压印胶图案332；其中，去除所述压印胶图案332的工艺流程包括去胶、腐蚀、清洗、烘干等工艺流程。\n\n[0076]步骤S60：将所述发光二极管基板切割形成单个的微发光二极管器件300；其中，切割所述发光二极管基板的方法包括激光切割。如图3F所示，多个所述微腔结构321在所述微发光二极管膜层320表面连续排布。\n\n[0077]在本揭示实施例中，如图4A至4D所示，图4A至4D均为本揭示实施例提供的阵列基板的结构示意图，所述制作方法还包括：\n\n[0078]步骤S701：如图4A所示，提供衬底基板410，在所述衬底基板410上形成薄膜晶体管驱动阵列411，从而形成阵列基板。\n\n[0079]步骤S702：如图4B所示，在所述衬底基板410上涂布黑色光阻，覆盖掩膜板，紫外线固化后，用显影液去除残余光阻材料，形成图案化的第一挡墙412。\n\n[0080]步骤S703：将所述微发光二极管器件300转移至所述衬底基板上。如图4C所示，所述第一挡墙412设置于相邻所述微发光二极管器件300之间，并环绕所述微发光二极管器件300的四周，以将相邻所述微发光二极管器件300隔开。\n\n[0081]步骤S704:在所述微发光二极管器件300远离所述衬底基板410一侧的表面涂布量子点墨水。\n\n[0082]步骤S705：对所述量子点墨水进行紫外线固化，形成量子点膜层。\n\n[0083]其中，所述量子点膜层覆盖所述微发光二极管器件300表面，并填充所述微腔结构321，多个微腔结构321将量子点分散到微发光二极管器件300表面上的各个微腔结构中，防止量子点的聚集，同时又将量子点限制在微发光二极管器件300内部，包含有量子点的多个微腔结构321可以增强微发光二极管器件与量子点之间的能量转移效应，减少光致发光过程中产生的光损失，提高光的利用率。\n\n[0084]上述步骤完成后,即可制作完成如图4D所示的全彩化的阵列基板，所述微发光二极管器件300为蓝色微发光二极管器件，所述量子点膜层包括红色量子点膜层和绿色量子点膜层，通过量子点膜层对蓝色微发光二极管器件发出光线的转换，即可实现红色像素、绿色像素和蓝色像素的显示效果，所述量子点膜层的排布方式和微发光二极管器件300的排布方式此处不做限制，可以根据实际需求进行调整。\n\n[0085]在本揭示实施例中，后续还包括对所述全彩化的阵列基板进行薄膜封装，其步骤与现有技术相同，此处不再赘述。\n\n[0086]在本揭示实施例中，所述步骤S704中涂布所述量子点墨水的方法为喷墨打印。\n\n[0087]本揭示实施例的有益效果：本揭示实施例提供一种显示装置的制作方法，通过在微发光二极管器件表面形成多个向内部凹陷的微腔结构，使得量子点膜层在覆盖所述微发光二极管器件表面的同时，填充所述微腔结构，以将量子点分散到微发光二极管器件表面上的各个微腔结构中，防止量子点的聚集，同时又将量子点限制在微发光二极管器件内部，包含有量子点的多个微腔结构可以增强微发光二极管器件与量子点之间的能量转移效应，减少光致发光过程中产生的光损失，提高光的利用率。\n\n[0088]综上所述，虽然本揭示以优选实施例揭露如上，但上述优选实施例并非用以限制本揭示，本领域的普通技术人员，在不脱离本揭示的精神和范围内，均可作各种更动与润饰，因此本揭示的保护范围以权利要求界定的范围为基准。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示装置及显示装置的制作方法。\n\n背景技术\n\n[0002]目前，显示技术的发展趋势有大尺寸、超薄、高清、窄边框、和可柔性等。伴随着显示屏幕的需求更多，多种新型显示技术应运而生，尤其是有机发光二极管(Organic Light-Emitting Diode,OLED)、微发光二极管(MicroLED)以及量子点技术，在降低功耗方面具有明显优势，是显示技术的一大发展趋势。但是，采用OLED的显示屏幕容易出现烧屏现象。与OLED相比，MicroLED采用无机半导体作为发光材料，材料的稳定性更好，器件寿命更久，同时可以更薄、更省电，亮度、屏幕相应时间、解析度和显示效果也都要优于OLED。\n\n[0003]作为一种新技术，MicroLED的工艺难度以及成本都还太高，尤其是转移LED芯片时所需的“巨量转移”技术。实现MicroLED全彩化的方案有两种，一种是将大量的红绿蓝三种颜色的微型LED转移到相应位置；另一种是只转移蓝光LED，红色和绿色像素则采用量子点搭配蓝光LED。后者大大减少了工艺难度，并且解决了红色MicroLED寿命不佳的缺点，并且量子点作为光转换材料，具有制备工艺简单、光谱可调和发光峰窄的优势，可以扩展MicroLED的色域。然而蓝光LED激发量子点材料，在能量转移的过程中，不可避免会存在大量的能量损失，如LED自身波导效应损失，量子点产生的光散射效应等，以及量子点材料自身的自吸收现象，使得光致光发光过程中的光损失过多，导致光的利用率不高。\n\n[0004]综上所述，现有MicroLED显示装置存在光致发光过程中光损失过多导致光利用率不高的问题。故，有必要提供一种显示装置及显示装置的制作方法来改善这一缺陷。\n\n发明内容\n\n[0005]本揭示实施例提供一种显示装置及显示装置的制作方法，用于解决现有MicroLED显示装置存在光致发光过程中光损失过多导致光利用率不高的问题。\n\n[0006]本揭示实施例提供一种显示装置，包括：\n\n[0007]阵列基板；\n\n[0008]微发光二极管器件，阵列排布于所述阵列基板上，所述微发光二极管器件远离所述阵列基板一侧的表面设有多个向所述微发光二极管器件内部凹陷的微腔结构；以及\n\n[0009]量子点膜层，设置于所述微发光二极管器件远离所述阵列基板的一侧上，并填充所述微腔结构。\n\n[0010]根据本揭示一实施例，所述微腔结构的底面形状包括矩形、圆形或椭圆形，多个所述微腔结构在所述微发光二极管器件远离所述阵列基板一侧的表面连续排布。\n\n[0011]根据本揭示一实施例，所述微发光二极管器件包括蓝色微发光二极管器件，所述量子点膜层包括红色量子点膜层和绿色量子点膜层。\n\n[0012]根据本揭示一实施例，所述量子点膜层的材料包括含有量子点的光固化性材料。\n\n[0013]根据本揭示一实施例，相邻所述微发光二极管器件之间设有第一挡墙，所述第一挡墙将相邻的所述微发光二极管器件以及相邻的所述量子点膜层隔开。\n\n[0014]根据本揭示一实施例，所述第一挡墙在垂直于所述阵列基板的方向上的高度大于所述微发光二极管器件的高度。\n\n[0015]根据本揭示一实施例，所述显示装置还包括与所述阵列基板相对设置的第二基板，所述第二基板靠近所述阵列基板的一侧设有彩色滤光层，所述彩色滤光层包括多个与所述微发光二极管以及所述量子点膜层一一对应的色阻。\n\n[0016]根据本揭示一实施例，所述玻璃基板靠近所述阵列基板一侧还设有第二挡墙，所述第二挡墙设置于相邻所述色阻之间。\n\n[0017]本揭示实施例提供一种显示装置的制作方法，包括：\n\n[0018]提供发光二极管基板，包括基底和位于所述基底上的发光二极管膜层，在所述发光二极管膜层表面上涂布压印胶；\n\n[0019]将压印模具压入所述压印胶，紫外线固化后，取出所述压印模具，形成压印层；\n\n[0020]刻蚀去除所述压印层，在所述发光二极管膜层表面上形成压印胶图案；\n\n[0021]对所述发光二极管膜层远离所述基底一侧表面进行刻蚀，形成多个间隔排布并向所述发光二极管膜层内部凹陷的微腔结构；\n\n[0022]去除位于所述发光二极管膜层表面的所述压印胶图案；以及\n\n[0023]将所述发光二极管基板切割形成单个的微发光二极管器件。\n\n[0024]根据本揭示一实施例，所述制作方法还包括：\n\n[0025]提供衬底基板，在所述衬底基板上形成薄膜晶体管驱动阵列；\n\n[0026]在所述衬底基板上涂布黑色光阻，覆盖掩膜板，紫外线固化后，去除残余光阻材料，形成图案化的第一挡墙；以及\n\n[0027]将所述微发光二极管器件转移至所述衬底基板上。\n\n[0028]本揭示实施例的有益效果：本揭示实施例通过在微发光二极管器件远离阵列基板一侧的表面设置多个向微发光二极管器件内部凹陷的微腔结构，并通过设置于微发光二极管器件上的量子点膜层填充进微腔结构，将量子点分散到微发光二极管器件表面上的各个微腔结构中，防止量子点的聚集，同时又将量子点限制在微发光二极管器件内部，包含有量子点的多个微腔结构可以增强微发光二极管器件与量子点之间的能量转移效应，减少光致发光过程中产生的光损失，提高光的利用率。\n\n附图说明\n\n[0029]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是揭示的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0030]图1为本揭示实施例一提供的显示装置的截面结构示意图；\n\n[0031]图2为本揭示实施例二提供的显示装置的截面结构示意图；\n\n[0032]图3A为本揭示实施例三提供的发光二极管基板的结构示意图；\n\n[0033]图3B为本揭示实施例三提供的发光二极管基板的结构示意图；\n\n[0034]图3C为本揭示实施例三提供的发光二极管基板的结构示意图；\n\n[0035]图3D为本揭示实施例三提供的发光二极管基板的结构示意图；\n\n[0036]图3E为本揭示实施例三提供的发光二极管基板的结构示意图；\n\n[0037]图3F为本揭示实施例三提供的微发光二极管器件的结构示意图；\n\n[0038]图4A为本揭示实施例三提供的阵列基板的结构示意图；\n\n[0039]图4B为本揭示实施例三提供的阵列基板的结构示意图；\n\n[0040]图4C为本揭示实施例三提供的阵列基板的结构示意图；\n\n[0041]图4D为本揭示实施例三提供的阵列基板的结构示意图。\n\n具体实施方式\n\n[0042]以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。\n\n[0043]下面结合附图和具体实施例对本揭示做进一步的说明。\n\n[0044]实施例一：\n\n[0045]本揭示实施例提供一种显示装置，下面结合图1进行详细说明。\n\n[0046]如图1所示，图1为本揭示实施例提供的显示装置100的截面结构示意图，所述显示装置100包括阵列基板110、微发光二极管器件120以及量子点膜层。所述阵列基板110上设有像素驱动电路(图中未示出)，所述微发光二极管器件120阵列排布于所述阵列基板110上，所述微发光二极管器件120远离所述阵列基板110一侧的表面设有多个向所述微发光二极管器件120内部凹陷的微腔结构121。\n\n[0047]优选的，所述微腔结构121的底面形状包括矩形、圆形或椭圆形。在一些实施例中，所述微腔结构121的底面形状还可以根据实际需求调整为其他形状，此处不做限制。多个所述微腔结构121在所述微发光二极管器件120远离所述阵列基板110一侧的表面连续排布。\n\n[0048]如图1所示，所述量子点膜层设置于所述微发光二极管器件120远离所述阵列基板110的一侧上，并填充所述微腔结构121。利用相互隔开的微腔结构121将量子点膜层中的量子点分散到微发光二极管器件表面上的各个微腔结构中，防止量子点的聚集，同时又将量子点限制在微发光二极管器件内部，包含有量子点的多个微腔结构可以增强微发光二极管器件与量子点之间的能量转移效应，减少光致发光过程中产生的光损失，提高光的利用率。\n\n[0049]具体地，微发光二极管器件120为蓝色微发光二极管器件，所述量子点膜层包括红色量子点膜层122和绿色量子点膜层123，所述量子点膜层并未覆盖全部所述微发光二极管器件120。其中，蓝色微发光二极管器件120自身发出蓝色光，若设置于阵列基板110的蓝色子像素区域内，则不用在其上设置任何量子点膜层。红色量子点膜层122和绿色量子点膜层123对蓝色微发光二极管器件发出的蓝光具有转换作用。若设置于红色子像素区域，则覆盖红色量子点膜层122，微发光二极管器件120发出的蓝光经过红色量子点膜层122，转变为红光；若设置于绿色子像素区域，则覆盖绿色量子点膜层123，微发光二极管器件120发出的蓝光经过绿色量子点膜层123，转变为绿光，从而在阵列基板110上形成红、绿、蓝三像素的转换，实现显示装置100的全彩化显示。\n\n[0050]优选的，所述量子点膜层的材料包括含有量子点的光固化性材料。\n\n[0051]如图1所示，相邻所述微发光二极管器件120之间还设有第一挡墙130，所述第一挡墙130环绕各微发光二极管器件120四周，以将相邻所述微发光二极管器件120隔开，同时，还将位于微发光二极管器件120上方相邻的所述量子点膜层隔开，防止微发光二极管120发出的光线串扰到相邻微发光二极管器件120，造成显示装置100的显示不良。\n\n[0052]优选的，所述第一挡墙130的材料与本领域中常用的黑色光阻材料相同。同时，为减弱光的串扰，提高第一挡墙130的屏蔽效果，所述第一挡墙130在垂直于所述阵列基板110的方向上的高度应大于所述微发光二极管器件120的高度。\n\n[0053]在本揭示实施例中，所述阵列基板110上还设有封装层(图中未示出)，所述封装层覆盖所述微发光二极管器件120以及所述第一挡墙130，并向所述阵列基板110的边缘延伸，以防止所述阵列基板上的像素驱动电路和微发光二极管器件120等显示器件受到水汽和氧气的侵蚀。\n\n[0054]本揭示实施例的有益效果：本揭示实施例通过在微发光二极管器件远离阵列基板一侧的表面设置多个向微发光二极管器件内部凹陷的微腔结构，并通过设置于微发光二极管器件上的量子点膜层填充进微腔结构，将量子点分散到微发光二极管器件表面上的各个微腔结构中，防止量子点的聚集，同时又将量子点限制在微发光二极管器件内部，包含有量子点的多个微腔结构可以增强微发光二极管器件与量子点之间的能量转移效应，减少光致发光过程中产生的光损失，提高光的利用率。\n\n[0055]实施例二：\n\n[0056]本揭示实施例提供一种显示装置200，下面结合图2进行详细说明。\n\n[0057]如图2所示，图2为本揭示实施例提供的显示装置200的截面结构示意图，所述显示装置200包括阵列基板210、微发光二极管器件220以及量子点膜层。所述阵列基板210上设有像素驱动电路(图中未示出)，所述微发光二极管器件220阵列排布于所述阵列基板210上，所述微发光二极管器件220远离所述阵列基板210一侧的表面设有多个向所述微发光二极管器件220内部凹陷的微腔结构221。\n\n[0058]优选的，所述微腔结构221的底面形状包括矩形、圆形或椭圆形。在一些实施例中，所述微腔结构221的底面形状还可以根据实际需求调整为其他形状，此处不做限制。多个所述微腔结构221在所述微发光二极管器件220远离所述阵列基板210一侧的表面连续排布。\n\n[0059]如图2所示，所述量子点膜层设置于所述微发光二极管器件220远离所述阵列基板210的一侧上，并填充所述微腔结构221。利用相互隔开的微腔结构221将量子点膜层中的量子点分散到微发光二极管器件表面上的各个微腔结构中，防止量子点的聚集，同时又将量子点限制在微发光二极管器件内部，包含有量子点的多个微腔结构可以增强微发光二极管器件与量子点之间的能量转移效应，减少光致发光过程中产生的光损失，提高光的利用率。\n\n[0060]具体地，微发光二极管器件220为蓝色微发光二极管器件，所述量子点膜层包括红色量子点膜层222和绿色量子点膜层223，所述量子点膜层并未覆盖全部所述微发光二极管器件220。其中，蓝色微发光二极管器件220自身发出蓝色光，若设置于阵列基板210的蓝色子像素区域内，则不用在其上设置任何量子点膜层。红色量子点膜层222和绿色量子点膜层223对蓝色微发光二极管器件发出的蓝光具有转换作用。若设置于红色子像素区域，则覆盖红色量子点膜层222，微发光二极管器件220发出的蓝光经过红色量子点膜层222，转变为红光；若设置于绿色子像素区域，则覆盖绿色量子点膜层223，微发光二极管器件220发出的蓝光经过绿色量子点膜层223，转变为绿光，从而在阵列基板210上形成红、绿、蓝三像素的转换，实现显示装置200的全彩化显示。\n\n[0061]优选的，所述量子点膜层的材料包括含有量子点的光固化性材料。\n\n[0062]如图2所示，相邻所述微发光二极管器件220之间还设有第一挡墙230，所述第一挡墙230环绕各微发光二极管器件220四周，以将相邻所述微发光二极管器件220隔开，同时，还将位于微发光二极管器件220上方相邻的所述量子点膜层隔开，防止微发光二极管220发出的光线串扰到相邻微发光二极管器件220，造成显示装置200的显示不良。\n\n[0063]优选的，所述第一挡墙230的材料与本领域中常用的黑色光阻材料相同。同时，为减弱光的串扰，提高第一挡墙230的屏蔽效果，所述第一挡墙230在垂直于所述阵列基板210的方向上的高度应大于所述微发光二极管器件220的高度。\n\n[0064]如图2所示，在本揭示实施例中，所述显示装置200还包括与所述阵列基板210相对设置的第二基板240，所述第二基板240靠近所述阵列基板210的一侧设有彩色滤光层，所述彩色滤光层包括多个与所述微发光二极管器件220以及所述量子点膜层一一对应的色阻，所述阵列基板210与所述第二基板240之间通过封装框胶250密封贴合。\n\n[0065]具体地，所述色阻包括蓝色色阻241、红色色阻242和绿色色阻243，所述蓝色色阻241对应未覆盖量子点膜层的蓝色微发光二极管器件，红色色阻242对应红色量子点膜层222，绿色色阻243对应绿色量子点膜层223。通过在阵列基板相对侧设置彩色滤光层，以转化未被量子点膜层吸收的蓝光，从而提高显示装置200的显示效果。\n\n[0066]优选的，所述玻璃基板240靠近所述阵列基板210一侧还设有第二挡墙244，所述第二挡墙244设置于相邻所述色阻之间，并包围所述各色阻四周，以隔开所述色阻，从而防止对应微发光二极管器件220发出的光线串扰到相邻色阻，影响显示装置200的显示效果。\n\n[0067]本揭示实施例的有益效果：本揭示实施例通过在微发光二极管器件远离阵列基板一侧的表面设置多个向微发光二极管器件内部凹陷的微腔结构，并通过设置于微发光二极管器件上的量子点膜层填充进微腔结构，将量子点分散到微发光二极管器件表面上的各个微腔结构中，防止量子点的聚集，同时又将量子点限制在微发光二极管器件内部，包含有量子点的多个微腔结构可以增强微发光二极管器件与量子点之间的能量转移效应，减少光致发光过程中产生的光损失，提高光的利用率。\n\n[0068]实施例三：\n\n[0069]本揭示实施例提供一种显示装置的制作方法，下面结合图3A至图4D进行详细说明。\n\n[0070]如图3A至3F所示，图3A至3E均为本揭示实施例提供的发光二极管基板的截面结构示意图，图3F为微发光二极管器件的结构示意图，所述制作方法包括：\n\n[0071]步骤S10：如图3A所示，提供发光二极管基板，包括基底310和位于所述基底310上的发光二极管膜层320，在所述发光二极管膜层320表面涂布压印胶330；其中，所述压印胶330为纳米压印胶。\n\n[0072]步骤S20：如图3A和3B所示，将压印模具340沿箭头所示方向压入所述压印胶330，紫外线固化后，取出所述压印模具340，被所述压印模具340所压印的部分形成如图3C所示的压印层331；其中，所述压印模具340为纳米压印模具。\n\n[0073]步骤S30：刻蚀去除所述压印331，在所述发光二极管膜层320表面上形成如图3D所示的压印胶图案332。\n\n[0074]步骤S40：对所述发光二极管膜层320远离所述基底310一侧表面进行刻蚀，形成如图3E所示的多个间隔排布并向所述发光二极管膜层320内部凹陷的微腔结构321；所述压印胶图案332可作为本步骤中的掩膜板，刻蚀所述发光二极管膜层320的方法包括电感祸合等离子体刻蚀或者反应离子束刻蚀。\n\n[0075]步骤S50：去除位于所述发光二极管膜层320表面的所述压印胶图案332；其中，去除所述压印胶图案332的工艺流程包括去胶、腐蚀、清洗、烘干等工艺流程。\n\n[0076]步骤S60：将所述发光二极管基板切割形成单个的微发光二极管器件300；其中，切割所述发光二极管基板的方法包括激光切割。如图3F所示，多个所述微腔结构321在所述微发光二极管膜层320表面连续排布。\n\n[0077]在本揭示实施例中，如图4A至4D所示，图4A至4D均为本揭示实施例提供的阵列基板的结构示意图，所述制作方法还包括：\n\n[0078]步骤S701：如图4A所示，提供衬底基板410，在所述衬底基板410上形成薄膜晶体管驱动阵列411，从而形成阵列基板。\n\n[0079]步骤S702：如图4B所示，在所述衬底基板410上涂布黑色光阻，覆盖掩膜板，紫外线固化后，用显影液去除残余光阻材料，形成图案化的第一挡墙412。\n\n[0080]步骤S703：将所述微发光二极管器件300转移至所述衬底基板上。如图4C所示，所述第一挡墙412设置于相邻所述微发光二极管器件300之间，并环绕所述微发光二极管器件300的四周，以将相邻所述微发光二极管器件300隔开。\n\n[0081]步骤S704:在所述微发光二极管器件300远离所述衬底基板410一侧的表面涂布量子点墨水。\n\n[0082]步骤S705：对所述量子点墨水进行紫外线固化，形成量子点膜层。\n\n[0083]其中，所述量子点膜层覆盖所述微发光二极管器件300表面，并填充所述微腔结构321，多个微腔结构321将量子点分散到微发光二极管器件300表面上的各个微腔结构中，防止量子点的聚集，同时又将量子点限制在微发光二极管器件300内部，包含有量子点的多个微腔结构321可以增强微发光二极管器件与量子点之间的能量转移效应，减少光致发光过程中产生的光损失，提高光的利用率。\n\n[0084]上述步骤完成后,即可制作完成如图4D所示的全彩化的阵列基板，所述微发光二极管器件300为蓝色微发光二极管器件，所述量子点膜层包括红色量子点膜层和绿色量子点膜层，通过量子点膜层对蓝色微发光二极管器件发出光线的转换，即可实现红色像素、绿色像素和蓝色像素的显示效果，所述量子点膜层的排布方式和微发光二极管器件300的排布方式此处不做限制，可以根据实际需求进行调整。\n\n[0085]在本揭示实施例中，后续还包括对所述全彩化的阵列基板进行薄膜封装，其步骤与现有技术相同，此处不再赘述。\n\n[0086]在本揭示实施例中，所述步骤S704中涂布所述量子点墨水的方法为喷墨打印。\n\n[0087]本揭示实施例的有益效果：本揭示实施例提供一种显示装置的制作方法，通过在微发光二极管器件表面形成多个向内部凹陷的微腔结构，使得量子点膜层在覆盖所述微发光二极管器件表面的同时，填充所述微腔结构，以将量子点分散到微发光二极管器件表面上的各个微腔结构中，防止量子点的聚集，同时又将量子点限制在微发光二极管器件内部，包含有量子点的多个微腔结构可以增强微发光二极管器件与量子点之间的能量转移效应，减少光致发光过程中产生的光损失，提高光的利用率。\n\n[0088]综上所述，虽然本揭示以优选实施例揭露如上，但上述优选实施例并非用以限制本揭示，本领域的普通技术人员，在不脱离本揭示的精神和范围内，均可作各种更动与润饰，因此本揭示的保护范围以权利要求界定的范围为基准。');
INSERT INTO `os_patent_instruction_text` VALUES (10729, 23783, '技术领域\n\n[0001]本发明涉及显示技术领域，具体涉及一种微型发光二极管的巨量转移方法及显示面板。\n\n背景技术\n\n[0002]Micro LED即LED微缩技术，是指将传统LED阵列化、微缩化后定址巨量转移到电路基板上，形成超小间距LED，将毫米级别的LED长度进一步微缩到微米级，以达到超高像素、超高解析率。Micro LED具备无需背光源、能够自发光的特性，与OLED相似，但相比OLED，Micro LED色彩更容易准确的调试，有更长的发光寿命和更高的亮度，且封装要求低，更容易实现柔性及无缝拼接显示，是未来极具发展潜力的未来显示器。\n\n[0003]在Micro LED显示面板的制备过程中，如何将Micro LED芯片快速的巨量转移至电路基板上是一个较为关键的难点，在现有的技术中，常规的转移方法为采用分子间作用力进行转移。但这种转移方法需要用到结构性的转移头，而结构转移头制作复杂，成本高昂。如何简单快速的进行Micro LED巨量转移是Micro LED显示面板发展中亟需解决的难点。\n\n发明内容\n\n[0004]本发明提供一种微型发光二极管的巨量转移方法，可快速简便地实现微型发光二极管的巨量转移。\n\n[0005]为解决上述问题，第一方面，本发明提供一种微型发光二极管的巨量转移方法，所述方法包括：\n\n[0006]S01：提供一承载基板，所述承载基板上设置有阵列排布的多个微型发光二极管芯片；\n\n[0007]S02：提供一转移基板，所述转移基板上设置有第一胶层，所述第一胶层的材料为热失黏胶，对所述第一胶层进行选择性地加热，被加热的区域形成失黏区，未被加热的区域形成黏性区，以形成选择性粘黏的第一胶层；\n\n[0008]S03：将所述转移基板上的所述选择性粘黏的第一胶层对准所述承载基板，选择性地黏取所述多个微型发光二极管芯片；\n\n[0009]S04：提供一目标基板，将黏取有所述多个微型发光二极管芯片的所述转移基板对准所述目标基板，并将所述黏取的多个微型发光二极管芯片转移至所述目标基板上。\n\n[0010]进一步地，所述承载基板上还设置有第二胶层，所述多个微型发光二极管芯片黏附于所述第二胶层上，其中，所述第二胶层的粘性大于所述第一胶层中所述失黏区的粘性，且小于所述第一胶层中所述黏性区的粘性。\n\n[0011]进一步地，所述目标基板上还设置有第三胶层，所述第三胶层的粘性大于所述第一胶层中所述黏性区的粘性。\n\n[0012]进一步地，在步骤S01中，所述设置有阵列排布的多个微型发光二极管芯片的承载基板的形成方法包括：\n\n[0013]提供一衬底基板，在所述衬底基板上形成阵列排布的所述多个微型发光二极管芯片；\n\n[0014]将所述衬底基板对准所述承载基板，且形成有所述阵列排布的多个微型发光二极管芯片的一侧朝向所述承载基板；\n\n[0015]使用激光照射所述衬底基板，使得所述阵列排布的多个微型发光二极管芯片从所述衬底基板上剥离并转移至所述承载基板。\n\n[0016]进一步地，所述第一胶层的材料选自下列至少一者：环氧胶、硅胶、以及聚丙烯酸类胶。\n\n[0017]进一步地，在步骤S02中，利用具有特定图案的选择性加热头对所述对第一胶层进行选择性地加热。\n\n[0018]进一步地，所述选择性加热头的加热方式为接触式加热或非接触式加热。\n\n[0019]进一步地，所述目标基板上配置有多个阵列排布的薄膜晶体管，且所述多个阵列排布的薄膜晶体管配置于所述第三胶层下。\n\n[0020]进一步地，在将所述黏取的微型发光二极管芯片转移至所述目标基板后，再对所述微型发光二极管芯片加热加压，使得所述微型发光二极管芯片与对应的所述薄膜晶体管电性导通。\n\n[0021]另一方面，本发明还提供了一种显示面板，所述显示面板为微型发光二极管显示面板，由前述的微型发光二极管的巨量转移方法制备形成。\n\n[0022]有益效果：本发明所提供的一种微型发光二极管的巨量转移方法，通过在转移基板上设置一层热失黏胶，并通过特定的图案化的加热头，对所述热失黏胶进行选择性的加热，使得热失黏胶部分预定的区域粘性大大降低，而未加热的区域粘性保持不变，从而可选择性地拾取微型发光二极管芯片并转移至目标基板上，该转移方法操作简便快速，且实现转移的设备制作简单，成本低廉。\n\n附图说明\n\n[0023]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0024]图1是本发明实施例提供一种微型发光二极管的巨量转移方法的文字流程示意图；\n\n[0025]图2A-2D是本发明实施例提供一种微型发光二极管的巨量转移方法的结构流程示意图。\n\n具体实施方式\n\n[0026]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0027]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0028]在本申请中，“示例性”一词用来表示“用作例子、例证或说明”。本申请中被描述为“示例性”的任何实施例不一定被解释为比其它实施例更优选或更具优势。为了使本领域任何技术人员能够实现和使用本发明，给出了以下描述。在以下描述中，为了解释的目的而列出了细节。应当明白的是，本领域普通技术人员可以认识到，在不使用这些特定细节的情况下也可以实现本发明。在其它实例中，不会对公知的结构和过程进行详细阐述，以避免不必要的细节使本发明的描述变得晦涩。因此，本发明并非旨在限于所示的实施例，而是与符合本申请所公开的原理和特征的最广范围相一致。\n\n[0029]本发明实施例提供一种微型发光二极管的巨量转移方法,以下结合图1与图2A-2D进行详细说明。\n\n[0030]具体地，所述微型发光二极管的巨量转移方法包括：\n\n[0031]S01：请参见图2A，提供一承载基板30，所述承载基板上设置有阵列排布的多个微型发光二极管芯片20，\n\n[0032]进一步地，所述设置有阵列排布的多个微型发光二极管芯片20的承载基板30的形成方法包括：\n\n[0033]提供一衬底基板10，在所述衬底基板上形成阵列排布的多个微型发光二极管芯片20；\n\n[0034]将所述衬底基板10对准所述承载基板30，且形成有所述阵列排布的多个微型发光二极管芯片20的一侧朝向所述承载基板30；\n\n[0035]使用激光照射所述衬底基板10，使得所述阵列排布的多个微型发光二极管芯片20从所述衬底基板上剥离并转移至所述承载基板30；\n\n[0036]进一步地，所述承载基板30上设置有第二胶层301，用以固定从衬底基板10上剥离的所述微型发光二极管芯片20，同时辅助进行后续的转移。\n\n[0037]在本领域的惯用技术中，通常需在特殊材质基板上形成微型发光二极管芯片，例如在蓝宝石基板上形成蓝光与绿光微型发光二极管芯片，在砷化镓基板上形成红光微型发光二极管芯片，然而，所形成的微型发光二极管芯片与基板之间的粘结力较大，无法直接使用后述的转移基板进行拾取，故，增设一个承载基板作为过渡，使用激光照射使得微型发光二极管芯片从形成基板上剥离，从而转移至承载基板上，以实现后续的转移。\n\n[0038]S02：请参见图2B，提供一转移基板40，所述转移基板40上设置有第一胶层401，所述第一胶层401的材料为热失黏胶(即所述热失黏胶在一定程度的加热后，黏性会大大降低)，对所述第一胶层401进行选择性地加热，被加热的区域形成失黏区4012，未被加热的区域形成黏性区4011，以形成选择性粘黏的第一胶层；\n\n[0039]其中，所述第一胶层401的材料通常可以为环氧胶、硅胶或聚丙烯酸类胶，以能实现所述的热失黏性即可；\n\n[0040]所述对第一胶层401进行选择性地加热包括：使用接触式加热器或非接触式加热器对所述第一胶层401的部分预定区域进行加热。\n\n[0041]具体的，所述加热器50上设置有特定图案的加热头501，所述加热头501根据设计需求，设计在不需要拾取微型发光二极管芯片的位置，即对应所述的失黏区4012，所述加热头501的加热方式可以为接触式加热，例如可以为具有凸出结构的加热头进行瞬间高温加热；也可以为非接触式加热，例如可以为红外激光器进行加热。\n\n[0042]进一步地，在加热后，形成的所述失黏区4012与黏性区4011的颜色不同，失黏区4012颜色变黄，而黏性区4011的颜色保持透明，从而利用失黏区4012与黏性区4011的颜色差异，可以实现在转移过程中较好的对位，即可实现高精度的转移。\n\n[0043]S03：请参见图2C，将所述转移基板40上的所述选择性粘黏的第一胶层对准所述承载基板30，选择性地黏取所述微型发光二极管芯片20；\n\n[0044]具体地，在转移过程中，将所述第一胶层靠近并接触所述承载基板30上黏附的微型发光二极管芯片20，其中，所述承载基板30上第二胶层301的粘性大于所述第一胶层中所述失黏区4012的粘性，且小于所述第一胶层中所述黏性区4011的粘性，从而，所述黏性区4011粘取了对应位置的微型发光二极管芯片20，所述失黏区4012无法黏取上，对应位置的微型发光二极管芯片20仍留在所述承载基板30上，即通过特定的粘性设置，实现了微型发光二极管芯片选择性地拾取。\n\n[0045]S04：请参照图2D，提供一目标基板60，将黏取有所述微型发光二极管芯片20的所述转移基板40对准所述目标基板60，并将所述黏取的微型发光二极管芯片20转移至所述目标基板60上，\n\n[0046]进一步地，所述目标基板60上还设置有第三胶层601，同样地，通过粘性大小的设置，即所述第三胶层601的粘性大于所述第一胶层中所述黏性区4011的粘性，从而实现转移。\n\n[0047]其中，所述目标基板60通常用于驱动转移至上侧的微型发光二极管芯片以实现显示，例如所述目标基板60通常可以为阵列薄膜晶体管基板，即在所述目标基板60上、所述第三胶层601之下设置多个阵列排布的薄膜晶体管(图中未示出)，所述薄膜晶体管与所述微型发光二极管芯片一一对应，以实现驱动显示。\n\n[0048]所述第三胶层601的材料通常可以为异方性导电胶或不导电的热熔胶，在将所述黏取的微型发光二极管芯片20转移至所述目标基板60上之后，再对所述微型发光二极管芯片加热加压邦定，使得所述微型发光二极管芯片20与对应的所述薄膜晶体管电性导通。\n\n[0049]可以理解的是，上述实施例给出了一种微型发光二极管的巨量转移方法，在实际的微型发光二极管面板中，通常根据像素的构成，需要进行多次转移，例如在一种红绿蓝像素排布的微型发光二极管面板中，通常需要重复上述转移方法，依次将红光、蓝光、绿光微型发光二极管芯片转移至目标基板的对应位置，即实现完整的转移。\n\n[0050]本发明另一实施例还提供了一种微型发光二极管显示面板，由前述的微型发光二极管的巨量转移方法制备形成。\n\n[0051]通过采用如上实施例中描述的微型发光二极管的巨量转移方法，通过在转移基板上设置一层热失黏胶，并通过特定的图案化的加热器，对所述热失黏胶进行选择性的加热，使得热失黏胶部分预定的区域粘性大大降低，而未加热的区域粘性保持不变，从而可选择性地拾取微型发光二极管芯片并转移至目标基板上，该转移方法操作简便快速，且实现转移的设备制作简单，成本低廉。\n\n[0052]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见上文针对其他实施例的详细描述，此处不再赘述。\n\n[0053]以上对本发明实施例所提供的一种微型发光二极管的巨量转移方法以及显示面板进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。', '技术领域\n\n[0001]本发明涉及显示技术领域，具体涉及一种微型发光二极管的巨量转移方法及显示面板。\n\n背景技术\n\n[0002]Micro LED即LED微缩技术，是指将传统LED阵列化、微缩化后定址巨量转移到电路基板上，形成超小间距LED，将毫米级别的LED长度进一步微缩到微米级，以达到超高像素、超高解析率。Micro LED具备无需背光源、能够自发光的特性，与OLED相似，但相比OLED，Micro LED色彩更容易准确的调试，有更长的发光寿命和更高的亮度，且封装要求低，更容易实现柔性及无缝拼接显示，是未来极具发展潜力的未来显示器。\n\n[0003]在Micro LED显示面板的制备过程中，如何将Micro LED芯片快速的巨量转移至电路基板上是一个较为关键的难点，在现有的技术中，常规的转移方法为采用分子间作用力进行转移。但这种转移方法需要用到结构性的转移头，而结构转移头制作复杂，成本高昂。如何简单快速的进行Micro LED巨量转移是Micro LED显示面板发展中亟需解决的难点。\n\n发明内容\n\n[0004]本发明提供一种微型发光二极管的巨量转移方法，可快速简便地实现微型发光二极管的巨量转移。\n\n[0005]为解决上述问题，第一方面，本发明提供一种微型发光二极管的巨量转移方法，所述方法包括：\n\n[0006]S01：提供一承载基板，所述承载基板上设置有阵列排布的多个微型发光二极管芯片；\n\n[0007]S02：提供一转移基板，所述转移基板上设置有第一胶层，所述第一胶层的材料为热失黏胶，对所述第一胶层进行选择性地加热，被加热的区域形成失黏区，未被加热的区域形成黏性区，以形成选择性粘黏的第一胶层；\n\n[0008]S03：将所述转移基板上的所述选择性粘黏的第一胶层对准所述承载基板，选择性地黏取所述多个微型发光二极管芯片；\n\n[0009]S04：提供一目标基板，将黏取有所述多个微型发光二极管芯片的所述转移基板对准所述目标基板，并将所述黏取的多个微型发光二极管芯片转移至所述目标基板上。\n\n[0010]进一步地，所述承载基板上还设置有第二胶层，所述多个微型发光二极管芯片黏附于所述第二胶层上，其中，所述第二胶层的粘性大于所述第一胶层中所述失黏区的粘性，且小于所述第一胶层中所述黏性区的粘性。\n\n[0011]进一步地，所述目标基板上还设置有第三胶层，所述第三胶层的粘性大于所述第一胶层中所述黏性区的粘性。\n\n[0012]进一步地，在步骤S01中，所述设置有阵列排布的多个微型发光二极管芯片的承载基板的形成方法包括：\n\n[0013]提供一衬底基板，在所述衬底基板上形成阵列排布的所述多个微型发光二极管芯片；\n\n[0014]将所述衬底基板对准所述承载基板，且形成有所述阵列排布的多个微型发光二极管芯片的一侧朝向所述承载基板；\n\n[0015]使用激光照射所述衬底基板，使得所述阵列排布的多个微型发光二极管芯片从所述衬底基板上剥离并转移至所述承载基板。\n\n[0016]进一步地，所述第一胶层的材料选自下列至少一者：环氧胶、硅胶、以及聚丙烯酸类胶。\n\n[0017]进一步地，在步骤S02中，利用具有特定图案的选择性加热头对所述对第一胶层进行选择性地加热。\n\n[0018]进一步地，所述选择性加热头的加热方式为接触式加热或非接触式加热。\n\n[0019]进一步地，所述目标基板上配置有多个阵列排布的薄膜晶体管，且所述多个阵列排布的薄膜晶体管配置于所述第三胶层下。\n\n[0020]进一步地，在将所述黏取的微型发光二极管芯片转移至所述目标基板后，再对所述微型发光二极管芯片加热加压，使得所述微型发光二极管芯片与对应的所述薄膜晶体管电性导通。\n\n[0021]另一方面，本发明还提供了一种显示面板，所述显示面板为微型发光二极管显示面板，由前述的微型发光二极管的巨量转移方法制备形成。\n\n[0022]有益效果：本发明所提供的一种微型发光二极管的巨量转移方法，通过在转移基板上设置一层热失黏胶，并通过特定的图案化的加热头，对所述热失黏胶进行选择性的加热，使得热失黏胶部分预定的区域粘性大大降低，而未加热的区域粘性保持不变，从而可选择性地拾取微型发光二极管芯片并转移至目标基板上，该转移方法操作简便快速，且实现转移的设备制作简单，成本低廉。\n\n附图说明\n\n[0023]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0024]图1是本发明实施例提供一种微型发光二极管的巨量转移方法的文字流程示意图；\n\n[0025]图2A-2D是本发明实施例提供一种微型发光二极管的巨量转移方法的结构流程示意图。\n\n具体实施方式\n\n[0026]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0027]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0028]在本申请中，“示例性”一词用来表示“用作例子、例证或说明”。本申请中被描述为“示例性”的任何实施例不一定被解释为比其它实施例更优选或更具优势。为了使本领域任何技术人员能够实现和使用本发明，给出了以下描述。在以下描述中，为了解释的目的而列出了细节。应当明白的是，本领域普通技术人员可以认识到，在不使用这些特定细节的情况下也可以实现本发明。在其它实例中，不会对公知的结构和过程进行详细阐述，以避免不必要的细节使本发明的描述变得晦涩。因此，本发明并非旨在限于所示的实施例，而是与符合本申请所公开的原理和特征的最广范围相一致。\n\n[0029]本发明实施例提供一种微型发光二极管的巨量转移方法,以下结合图1与图2A-2D进行详细说明。\n\n[0030]具体地，所述微型发光二极管的巨量转移方法包括：\n\n[0031]S01：请参见图2A，提供一承载基板30，所述承载基板上设置有阵列排布的多个微型发光二极管芯片20，\n\n[0032]进一步地，所述设置有阵列排布的多个微型发光二极管芯片20的承载基板30的形成方法包括：\n\n[0033]提供一衬底基板10，在所述衬底基板上形成阵列排布的多个微型发光二极管芯片20；\n\n[0034]将所述衬底基板10对准所述承载基板30，且形成有所述阵列排布的多个微型发光二极管芯片20的一侧朝向所述承载基板30；\n\n[0035]使用激光照射所述衬底基板10，使得所述阵列排布的多个微型发光二极管芯片20从所述衬底基板上剥离并转移至所述承载基板30；\n\n[0036]进一步地，所述承载基板30上设置有第二胶层301，用以固定从衬底基板10上剥离的所述微型发光二极管芯片20，同时辅助进行后续的转移。\n\n[0037]在本领域的惯用技术中，通常需在特殊材质基板上形成微型发光二极管芯片，例如在蓝宝石基板上形成蓝光与绿光微型发光二极管芯片，在砷化镓基板上形成红光微型发光二极管芯片，然而，所形成的微型发光二极管芯片与基板之间的粘结力较大，无法直接使用后述的转移基板进行拾取，故，增设一个承载基板作为过渡，使用激光照射使得微型发光二极管芯片从形成基板上剥离，从而转移至承载基板上，以实现后续的转移。\n\n[0038]S02：请参见图2B，提供一转移基板40，所述转移基板40上设置有第一胶层401，所述第一胶层401的材料为热失黏胶(即所述热失黏胶在一定程度的加热后，黏性会大大降低)，对所述第一胶层401进行选择性地加热，被加热的区域形成失黏区4012，未被加热的区域形成黏性区4011，以形成选择性粘黏的第一胶层；\n\n[0039]其中，所述第一胶层401的材料通常可以为环氧胶、硅胶或聚丙烯酸类胶，以能实现所述的热失黏性即可；\n\n[0040]所述对第一胶层401进行选择性地加热包括：使用接触式加热器或非接触式加热器对所述第一胶层401的部分预定区域进行加热。\n\n[0041]具体的，所述加热器50上设置有特定图案的加热头501，所述加热头501根据设计需求，设计在不需要拾取微型发光二极管芯片的位置，即对应所述的失黏区4012，所述加热头501的加热方式可以为接触式加热，例如可以为具有凸出结构的加热头进行瞬间高温加热；也可以为非接触式加热，例如可以为红外激光器进行加热。\n\n[0042]进一步地，在加热后，形成的所述失黏区4012与黏性区4011的颜色不同，失黏区4012颜色变黄，而黏性区4011的颜色保持透明，从而利用失黏区4012与黏性区4011的颜色差异，可以实现在转移过程中较好的对位，即可实现高精度的转移。\n\n[0043]S03：请参见图2C，将所述转移基板40上的所述选择性粘黏的第一胶层对准所述承载基板30，选择性地黏取所述微型发光二极管芯片20；\n\n[0044]具体地，在转移过程中，将所述第一胶层靠近并接触所述承载基板30上黏附的微型发光二极管芯片20，其中，所述承载基板30上第二胶层301的粘性大于所述第一胶层中所述失黏区4012的粘性，且小于所述第一胶层中所述黏性区4011的粘性，从而，所述黏性区4011粘取了对应位置的微型发光二极管芯片20，所述失黏区4012无法黏取上，对应位置的微型发光二极管芯片20仍留在所述承载基板30上，即通过特定的粘性设置，实现了微型发光二极管芯片选择性地拾取。\n\n[0045]S04：请参照图2D，提供一目标基板60，将黏取有所述微型发光二极管芯片20的所述转移基板40对准所述目标基板60，并将所述黏取的微型发光二极管芯片20转移至所述目标基板60上，\n\n[0046]进一步地，所述目标基板60上还设置有第三胶层601，同样地，通过粘性大小的设置，即所述第三胶层601的粘性大于所述第一胶层中所述黏性区4011的粘性，从而实现转移。\n\n[0047]其中，所述目标基板60通常用于驱动转移至上侧的微型发光二极管芯片以实现显示，例如所述目标基板60通常可以为阵列薄膜晶体管基板，即在所述目标基板60上、所述第三胶层601之下设置多个阵列排布的薄膜晶体管(图中未示出)，所述薄膜晶体管与所述微型发光二极管芯片一一对应，以实现驱动显示。\n\n[0048]所述第三胶层601的材料通常可以为异方性导电胶或不导电的热熔胶，在将所述黏取的微型发光二极管芯片20转移至所述目标基板60上之后，再对所述微型发光二极管芯片加热加压邦定，使得所述微型发光二极管芯片20与对应的所述薄膜晶体管电性导通。\n\n[0049]可以理解的是，上述实施例给出了一种微型发光二极管的巨量转移方法，在实际的微型发光二极管面板中，通常根据像素的构成，需要进行多次转移，例如在一种红绿蓝像素排布的微型发光二极管面板中，通常需要重复上述转移方法，依次将红光、蓝光、绿光微型发光二极管芯片转移至目标基板的对应位置，即实现完整的转移。\n\n[0050]本发明另一实施例还提供了一种微型发光二极管显示面板，由前述的微型发光二极管的巨量转移方法制备形成。\n\n[0051]通过采用如上实施例中描述的微型发光二极管的巨量转移方法，通过在转移基板上设置一层热失黏胶，并通过特定的图案化的加热器，对所述热失黏胶进行选择性的加热，使得热失黏胶部分预定的区域粘性大大降低，而未加热的区域粘性保持不变，从而可选择性地拾取微型发光二极管芯片并转移至目标基板上，该转移方法操作简便快速，且实现转移的设备制作简单，成本低廉。\n\n[0052]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见上文针对其他实施例的详细描述，此处不再赘述。\n\n[0053]以上对本发明实施例所提供的一种微型发光二极管的巨量转移方法以及显示面板进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10730, 23784, '【技术领域】\n\n[0001]本揭示涉及一种显示技术领域，特别涉及一种次毫米发光二极管的基板处理方法、其装置及其处理方法。\n\n【背景技术】\n\n[0002]在现有技术中，目前发光二极管装置的焊接方法的良率不佳。发光二极管焊接在基板上，但是基板的膜层的表面光滑，不利于所述发光二极管焊接到所述基板的所述膜层的所述表面上。\n\n[0003]故，有需要提供一种次毫米发光二极管的基板处理方法、次毫米发光二极管装置及其处理方法，以解决现有技术存在的问题。\n\n【发明内容】\n\n[0004]为解决上述技术问题，本揭示的目的在于提供次毫米发光二极管的基板处理方法、次毫米发光二极管装置及其处理方法，其能提升所述基板的铜膜层的表面的粗糙度，利于所述次毫米发光二极管焊接到所述铜膜层的所述表面上。\n\n[0005]为达成上述目的，本揭示提供次毫米发光二极管的基板处理方法。所述次毫米发光二极管的基板处理方法包括提供基板，所述基板包括基底和设置在所述基底上的铜膜层以及对所述铜膜层的表面进行粗糙化处理。\n\n[0006]于本揭示其中的一实施例中，当对所述铜膜层的表面进行粗糙化处理后，所述铜膜层的所述表面的粗糙度从纳米级变化成微米级。\n\n[0007]于本揭示其中的一实施例中，所述粗糙化处理是使用大气压等离子体对所述铜膜层的所述表面进行轰击，使所述铜膜层的所述表面的裸漏铜晶粒大小变化，提升所述铜膜层的所述表面的粗糙度。\n\n[0008]于本揭示其中的一实施例中，所述大气压等离子体的功率范围在1KW和1000KW之间。\n\n[0009]于本揭示其中的一实施例中，所述大气压等离子体的功率与所述铜膜层的面积为正相关关系。\n\n[0010]于本揭示其中的一实施例中，所述大气压等离子体是在流通的惰性气体环境下，对所述铜膜层的所述表面进行轰击。\n\n[0011]于本揭示其中的一实施例中，所述大气压等离子体对所述铜膜层的所述表面进行轰击的时间范围在10秒和600秒之间。\n\n[0012]于本揭示其中的一实施例中，所述铜膜层的所述表面的裸漏铜晶粒大小变化是从纳米级变化成微米级。\n\n[0013]本揭示还提供次毫米发光二极管装置的处理方法。所述次毫米发光二极管装置的处理方法包括根据如上所述的次毫米发光二极管的基板处理方法以及通过表面贴装技术将次毫米发光二极管焊接到粗糙化处理后的所述铜膜层的所述表面上。\n\n[0014]本揭示还提供次毫米发光二极管装置。所述次毫米发光二极管装置包括基板以及次毫米发光二极管。所述基板包括基底和设置在所述基底上的铜膜层。所述次毫米发光二极管设置在所述铜膜层的表面上。其中所述铜膜层的所述表面的粗糙度是微米级。\n\n[0015]由于本揭示的实施例中的次毫米发光二极管的基板处理方法、次毫米发光二极管装置及其处理方法中，所述次毫米发光二极管的基板处理方法包括提供基板，所述基板包括基底和设置在所述基底上的铜膜层以及对所述铜膜层的表面进行粗糙化处理。通过本揭示实施例能提升所述铜膜层的所述表面的粗糙度，利于所述次毫米发光二极管焊接到所述铜膜层的所述表面上。本揭示实施例还能降低所述次毫米发光二极管的基板制作成本，提升生产良率和提高所述次毫米发光二极管在所述铜膜层的所述表面上的焊锡抓力。\n\n[0016]为让本揭示的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下：\n\n【附图说明】\n\n[0017]图1显示根据本揭示的一实施例的次毫米发光二极管的基板的结构示意图。\n\n[0018]图2显示根据本揭示的一实施例的次毫米发光二极管的基板处理方法的流程示意图。\n\n[0019]图3显示根据本揭示的一实施例的次毫米发光二极管的基板的铜膜层的表面粗糙化处理前的示意图。\n\n[0020]图4显示根据本揭示的一实施例的次毫米发光二极管的基板的铜膜层的表面粗糙化处理后的示意图。\n\n[0021]图5显示根据本揭示的一实施例的次毫米发光二极管装置的结构示意图。\n\n[0022]图6显示根据本揭示的一实施例的次毫米发光二极管装置的处理方法的流程示意图。\n\n【具体实施方式】\n\n[0023]为了让本揭示的上述及其他目的、特征、优点能更明显易懂，下文将特举本揭示优选实施例，并配合所附图式，作详细说明如下。再者，本揭示所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧层、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。\n\n[0024]在图中，结构相似的单元是以相同标号表示。\n\n[0025]参照图1和图2，本揭示实施例提供一种次毫米发光二极管的基板及其处理方法。所述处理方法200包括步骤210，提供基板10，所述基板10包括基底12和设置在所述基底12上的铜膜层14以及步骤220，对所述铜膜层14的表面进行粗糙化处理。通过本揭示实施例能提升所述铜膜层14的所述表面的粗糙度，利于次毫米发光二极管焊接到所述铜膜层14的所述表面上。本揭示实施例还能降低所述次毫米发光二极管的基板10制作成本，提升生产良率和提高所述次毫米发光二极管在所述铜膜层14的所述表面上的焊锡抓力。\n\n[0026]具体地，于本揭示其中的一实施例中，当对所述铜膜层14的表面进行粗糙化处理后，所述铜膜层14的所述表面的粗糙度从纳米级变化成微米级。例如如图3所示，当对所述铜膜层14的表面进行粗糙化处理前，所述铜膜层14的所述表面的粗糙度为纳米级。所述铜膜层14的所述表面的粗糙度例如为0.85nm。例如如图4所示，当对所述铜膜层14的表面进行粗糙化处理后，所述铜膜层14的所述表面的粗糙度为微米级。\n\n[0027]具体地，于本揭示其中的一实施例中，所述基板10是经过薄膜晶体管(thin filmtransistor,TFT))制程形成的玻璃基板。所述铜膜层14铜是通过物理气相沉积的方式镀到所述基底12上。\n\n[0028]具体地，于本揭示其中的一实施例中，所述粗糙化处理是使用大气压等离子体(atmospheric pressure plasma,AP plasma)对所述铜膜层14的所述表面进行轰击，使所述铜膜层14的所述表面的裸漏铜晶粒大小变化，提升所述铜膜层14的所述表面的粗糙度。具体地，于本揭示其中的一实施例中，所述大气压等离子体的功率范围在1KW和1000KW之间。具体地，于本揭示其中的一实施例中，所述大气压等离子体的功率与所述铜膜层14的面积为正相关关系。例如，所述铜膜层14的面积愈大，所述大气压等离子体的功率愈大。例如，所述铜膜层14的面积愈小，所述大气压等离子体的功率愈小。\n\n[0029]具体地，于本揭示其中的一实施例中，所述大气压等离子体是在流通的惰性气体环境下，对所述铜膜层14的所述表面进行轰击。所述惰性气体例如为N2或Ar。具体地，于本揭示其中的一实施例中，所述大气压等离子体对所述铜膜层14的所述表面进行轰击的时间范围在10秒和600秒之间。具体地，于本揭示其中的一实施例中，所述大气压等离子体对所述铜膜层14的所述表面进行轰击的时间与所述铜膜层14的面积为正相关关系。例如，所述铜膜层14的面积愈大，所述大气压等离子体对所述铜膜层14的所述表面进行轰击的时间愈大。例如，所述铜膜层14的面积愈小，所述大气压等离子体对所述铜膜层14的所述表面进行轰击的时间愈小。\n\n[0030]具体地，于本揭示其中的一实施例中，所述铜膜层14的所述表面的裸漏铜晶粒大小变化是从纳米级变化成微米级。例如如图3所示，当对所述铜膜层14的表面进行粗糙化处理前，所述铜膜层14的所述表面的粗糙度为纳米级。所述铜膜层14的所述表面的粗糙度例如为0.85nm。例如如图4所示，当对所述铜膜层14的表面进行粗糙化处理后，所述铜膜层14的所述表面的粗糙度为微米级。\n\n[0031]参照图5和图6，本揭示实施例还提供次毫米发光二极管装置的处理方法。所述次毫米发光二极管装置的处理方法300包括步骤310，根据如上所述的次毫米发光二极管的基板处理方法200，以及步骤320，通过表面贴装技术将次毫米发光二极管20焊接到粗糙化处理后的所述铜膜层14的所述表面上。\n\n[0032]具体地，于本揭示其中的一实施例中，所述处理方法200包括步骤210，提供基板10，所述基板10包括基底12和设置在所述基底12上的铜膜层14，以及步骤220，对所述铜膜层14的表面进行粗糙化处理。通过本揭示实施例能提升所述铜膜层14的所述表面的粗糙度，利于次毫米发光二极管焊接到所述铜膜层14的所述表面上。本揭示实施例还能降低所述次毫米发光二极管的基板10制作成本，提升生产良率和提高所述次毫米发光二极管在所述铜膜层14的所述表面上的焊锡抓力。\n\n[0033]具体地，于本揭示其中的一实施例中，当对所述铜膜层14的表面进行粗糙化处理后，所述铜膜层14的所述表面的粗糙度从纳米级变化成微米级。例如如图3所示，当对所述铜膜层14的表面进行粗糙化处理前，所述铜膜层14的所述表面的粗糙度为纳米级。所述铜膜层14的所述表面的粗糙度例如为0.85nm。例如如图4所示，当对所述铜膜层14的表面进行粗糙化处理后，所述铜膜层14的所述表面的粗糙度为微米级。\n\n[0034]具体地，于本揭示其中的一实施例中，所述基板10是经过薄膜晶体管(thin filmtransistor,TFT))制程形成的玻璃基板。所述铜膜层14铜是通过物理气相沉积的方式镀到所述基底12上。\n\n[0035]具体地，于本揭示其中的一实施例中，所述粗糙化处理是使用大气压等离子体(atmospheric pressure plasma,AP plasma)对所述铜膜层14的所述表面进行轰击，使所述铜膜层14的所述表面的裸漏铜晶粒大小变化，提升所述铜膜层14的所述表面的粗糙度。具体地，于本揭示其中的一实施例中，所述大气压等离子体的功率范围在1KW和1000KW之间。具体地，于本揭示其中的一实施例中，所述大气压等离子体的功率与所述铜膜层14的面积为正相关关系。例如，所述铜膜层14的面积愈大，所述大气压等离子体的功率愈大。例如，所述铜膜层14的面积愈小，所述大气压等离子体的功率愈小。\n\n[0036]具体地，于本揭示其中的一实施例中，所述大气压等离子体是在流通的惰性气体环境下，对所述铜膜层14的所述表面进行轰击。所述惰性气体例如为N2或Ar。具体地，于本揭示其中的一实施例中，所述大气压等离子体对所述铜膜层14的所述表面进行轰击的时间范围在10秒和600秒之间。具体地，于本揭示其中的一实施例中，所述大气压等离子体对所述铜膜层14的所述表面进行轰击的时间与所述铜膜层14的面积为正相关关系。例如，所述铜膜层14的面积愈大，所述大气压等离子体对所述铜膜层14的所述表面进行轰击的时间愈大。例如，所述铜膜层14的面积愈小，所述大气压等离子体对所述铜膜层14的所述表面进行轰击的时间愈小。\n\n[0037]具体地，于本揭示其中的一实施例中，所述铜膜层14的所述表面的裸漏铜晶粒大小变化是从纳米级变化成微米级。例如如图3所示，当对所述铜膜层14的表面进行粗糙化处理前，所述铜膜层14的所述表面的粗糙度为纳米级。所述铜膜层14的所述表面的粗糙度例如为0.85nm。例如如图4所示，当对所述铜膜层14的表面进行粗糙化处理后，所述铜膜层14的所述表面的粗糙度为微米级。通过本揭示实施例能提升所述铜膜层14的所述表面的粗糙度，利于次毫米发光二极管焊接到所述铜膜层14的所述表面上。\n\n[0038]参照图5，本揭示实施例还提供次毫米发光二极管装置30(mini light emittingdiode device,mini LED device)。所述次毫米发光二极管装置30包括基板10以及次毫米发光二极管20。所述基板10包括基底12和设置在所述基底12上的铜膜层14。所述次毫米发光二极管20设置在所述铜膜层12的表面上。所述铜膜层14的所述表面的粗糙度是微米级。由于本揭示实施例的所述铜膜层14的所述表面的粗糙度为微米级，利于次毫米发光二极管20焊接到所述铜膜层14的所述表面上。本揭示实施例还能降低所述次毫米发光二极管20的基板10制作成本，提升生产良率和提高所述次毫米发光二极管20在所述铜膜层14的所述表面上的焊锡抓力。\n\n[0039]次毫米发光二极管装置30在显示上主要有两种应用，一种应用是作为自发光LED显示，同小间距LED类似，由于封装形式上不需要打金线，相比于小间距LED，即使在同样的芯片尺寸上次毫米发光二极管装置30也可以做更小的点间距显示。另外一种应用是在背光上的应用。相比于现有的背光LED模组，Mini LED背光模组将采用更加密集的芯片排布来减少混光距离，做到超薄的光源模组。另外配合局部调光(local dimming)控制，Mini LED背光模组将有更好的对比度和高动态范围图像(high-dynamic range,HDR)显示效果。\n\n[0040]次毫米发光二极管装置30在显示的基本要素包括功耗，成本，寿命，点间距，亮度和对比度等上均具有良好性能。\n\n[0041]综上所述，由于本揭示的实施例中的次毫米发光二极管的基板处理方法、次毫米发光二极管装置及其处理方法中，所述次毫米发光二极管的基板处理方法包括提供基板，所述基板包括基底和设置在所述基底上的铜膜层以及对所述铜膜层的表面进行粗糙化处理。通过本揭示实施例能提升所述铜膜层的所述表面的粗糙度，利于所述次毫米发光二极管焊接到所述铜膜层的所述表面上。本揭示实施例还能降低所述次毫米发光二极管的基板制作成本，提升生产良率和提高所述次毫米发光二极管在所述铜膜层的所述表面上的焊锡抓力。\n\n[0042]尽管已经相对于一个或多个实现方式示出并描述了本揭示，但是本领域技术人员基于对本说明书和附图的阅读和理解将会想到等价变型和修改。本揭示包括所有这样的修改和变型，并且仅由所附权利要求的范围限制。特别地关于由上述组件执行的各种功能，用于描述这样的组件的术语旨在对应于执行所述组件的指定功能(例如其在功能上是等价的)的任意组件(除非另外指示)，即使在结构上与执行本文所示的本说明书的示范性实现方式中的功能的公开结构不等同。此外，尽管本说明书的特定特征已经相对于若干实现方式中的仅一个被公开，但是这种特征可以与如可以对给定或特定应用而言是期望和有利的其他实现方式的一个或多个其他特征组合。而且，就术语“包括”、“具有”、“含有”或其变形被用在具体实施方式或权利要求中而言，这样的术语旨在以与术语“包含”相似的方式包括。\n\n[0043]以上仅是本揭示的优选实施方式，应当指出，对于本领域普通技术人员，在不脱离本揭示原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本揭示的保护范围。', '【技术领域】\n\n[0001]本揭示涉及一种显示技术领域，特别涉及一种次毫米发光二极管的基板处理方法、其装置及其处理方法。\n\n【背景技术】\n\n[0002]在现有技术中，目前发光二极管装置的焊接方法的良率不佳。发光二极管焊接在基板上，但是基板的膜层的表面光滑，不利于所述发光二极管焊接到所述基板的所述膜层的所述表面上。\n\n[0003]故，有需要提供一种次毫米发光二极管的基板处理方法、次毫米发光二极管装置及其处理方法，以解决现有技术存在的问题。\n\n【发明内容】\n\n[0004]为解决上述技术问题，本揭示的目的在于提供次毫米发光二极管的基板处理方法、次毫米发光二极管装置及其处理方法，其能提升所述基板的铜膜层的表面的粗糙度，利于所述次毫米发光二极管焊接到所述铜膜层的所述表面上。\n\n[0005]为达成上述目的，本揭示提供次毫米发光二极管的基板处理方法。所述次毫米发光二极管的基板处理方法包括提供基板，所述基板包括基底和设置在所述基底上的铜膜层以及对所述铜膜层的表面进行粗糙化处理。\n\n[0006]于本揭示其中的一实施例中，当对所述铜膜层的表面进行粗糙化处理后，所述铜膜层的所述表面的粗糙度从纳米级变化成微米级。\n\n[0007]于本揭示其中的一实施例中，所述粗糙化处理是使用大气压等离子体对所述铜膜层的所述表面进行轰击，使所述铜膜层的所述表面的裸漏铜晶粒大小变化，提升所述铜膜层的所述表面的粗糙度。\n\n[0008]于本揭示其中的一实施例中，所述大气压等离子体的功率范围在1KW和1000KW之间。\n\n[0009]于本揭示其中的一实施例中，所述大气压等离子体的功率与所述铜膜层的面积为正相关关系。\n\n[0010]于本揭示其中的一实施例中，所述大气压等离子体是在流通的惰性气体环境下，对所述铜膜层的所述表面进行轰击。\n\n[0011]于本揭示其中的一实施例中，所述大气压等离子体对所述铜膜层的所述表面进行轰击的时间范围在10秒和600秒之间。\n\n[0012]于本揭示其中的一实施例中，所述铜膜层的所述表面的裸漏铜晶粒大小变化是从纳米级变化成微米级。\n\n[0013]本揭示还提供次毫米发光二极管装置的处理方法。所述次毫米发光二极管装置的处理方法包括根据如上所述的次毫米发光二极管的基板处理方法以及通过表面贴装技术将次毫米发光二极管焊接到粗糙化处理后的所述铜膜层的所述表面上。\n\n[0014]本揭示还提供次毫米发光二极管装置。所述次毫米发光二极管装置包括基板以及次毫米发光二极管。所述基板包括基底和设置在所述基底上的铜膜层。所述次毫米发光二极管设置在所述铜膜层的表面上。其中所述铜膜层的所述表面的粗糙度是微米级。\n\n[0015]由于本揭示的实施例中的次毫米发光二极管的基板处理方法、次毫米发光二极管装置及其处理方法中，所述次毫米发光二极管的基板处理方法包括提供基板，所述基板包括基底和设置在所述基底上的铜膜层以及对所述铜膜层的表面进行粗糙化处理。通过本揭示实施例能提升所述铜膜层的所述表面的粗糙度，利于所述次毫米发光二极管焊接到所述铜膜层的所述表面上。本揭示实施例还能降低所述次毫米发光二极管的基板制作成本，提升生产良率和提高所述次毫米发光二极管在所述铜膜层的所述表面上的焊锡抓力。\n\n[0016]为让本揭示的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下：\n\n【附图说明】\n\n[0017]图1显示根据本揭示的一实施例的次毫米发光二极管的基板的结构示意图。\n\n[0018]图2显示根据本揭示的一实施例的次毫米发光二极管的基板处理方法的流程示意图。\n\n[0019]图3显示根据本揭示的一实施例的次毫米发光二极管的基板的铜膜层的表面粗糙化处理前的示意图。\n\n[0020]图4显示根据本揭示的一实施例的次毫米发光二极管的基板的铜膜层的表面粗糙化处理后的示意图。\n\n[0021]图5显示根据本揭示的一实施例的次毫米发光二极管装置的结构示意图。\n\n[0022]图6显示根据本揭示的一实施例的次毫米发光二极管装置的处理方法的流程示意图。\n\n【具体实施方式】\n\n[0023]为了让本揭示的上述及其他目的、特征、优点能更明显易懂，下文将特举本揭示优选实施例，并配合所附图式，作详细说明如下。再者，本揭示所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧层、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。\n\n[0024]在图中，结构相似的单元是以相同标号表示。\n\n[0025]参照图1和图2，本揭示实施例提供一种次毫米发光二极管的基板及其处理方法。所述处理方法200包括步骤210，提供基板10，所述基板10包括基底12和设置在所述基底12上的铜膜层14以及步骤220，对所述铜膜层14的表面进行粗糙化处理。通过本揭示实施例能提升所述铜膜层14的所述表面的粗糙度，利于次毫米发光二极管焊接到所述铜膜层14的所述表面上。本揭示实施例还能降低所述次毫米发光二极管的基板10制作成本，提升生产良率和提高所述次毫米发光二极管在所述铜膜层14的所述表面上的焊锡抓力。\n\n[0026]具体地，于本揭示其中的一实施例中，当对所述铜膜层14的表面进行粗糙化处理后，所述铜膜层14的所述表面的粗糙度从纳米级变化成微米级。例如如图3所示，当对所述铜膜层14的表面进行粗糙化处理前，所述铜膜层14的所述表面的粗糙度为纳米级。所述铜膜层14的所述表面的粗糙度例如为0.85nm。例如如图4所示，当对所述铜膜层14的表面进行粗糙化处理后，所述铜膜层14的所述表面的粗糙度为微米级。\n\n[0027]具体地，于本揭示其中的一实施例中，所述基板10是经过薄膜晶体管(thin filmtransistor,TFT))制程形成的玻璃基板。所述铜膜层14铜是通过物理气相沉积的方式镀到所述基底12上。\n\n[0028]具体地，于本揭示其中的一实施例中，所述粗糙化处理是使用大气压等离子体(atmospheric pressure plasma,AP plasma)对所述铜膜层14的所述表面进行轰击，使所述铜膜层14的所述表面的裸漏铜晶粒大小变化，提升所述铜膜层14的所述表面的粗糙度。具体地，于本揭示其中的一实施例中，所述大气压等离子体的功率范围在1KW和1000KW之间。具体地，于本揭示其中的一实施例中，所述大气压等离子体的功率与所述铜膜层14的面积为正相关关系。例如，所述铜膜层14的面积愈大，所述大气压等离子体的功率愈大。例如，所述铜膜层14的面积愈小，所述大气压等离子体的功率愈小。\n\n[0029]具体地，于本揭示其中的一实施例中，所述大气压等离子体是在流通的惰性气体环境下，对所述铜膜层14的所述表面进行轰击。所述惰性气体例如为N2或Ar。具体地，于本揭示其中的一实施例中，所述大气压等离子体对所述铜膜层14的所述表面进行轰击的时间范围在10秒和600秒之间。具体地，于本揭示其中的一实施例中，所述大气压等离子体对所述铜膜层14的所述表面进行轰击的时间与所述铜膜层14的面积为正相关关系。例如，所述铜膜层14的面积愈大，所述大气压等离子体对所述铜膜层14的所述表面进行轰击的时间愈大。例如，所述铜膜层14的面积愈小，所述大气压等离子体对所述铜膜层14的所述表面进行轰击的时间愈小。\n\n[0030]具体地，于本揭示其中的一实施例中，所述铜膜层14的所述表面的裸漏铜晶粒大小变化是从纳米级变化成微米级。例如如图3所示，当对所述铜膜层14的表面进行粗糙化处理前，所述铜膜层14的所述表面的粗糙度为纳米级。所述铜膜层14的所述表面的粗糙度例如为0.85nm。例如如图4所示，当对所述铜膜层14的表面进行粗糙化处理后，所述铜膜层14的所述表面的粗糙度为微米级。\n\n[0031]参照图5和图6，本揭示实施例还提供次毫米发光二极管装置的处理方法。所述次毫米发光二极管装置的处理方法300包括步骤310，根据如上所述的次毫米发光二极管的基板处理方法200，以及步骤320，通过表面贴装技术将次毫米发光二极管20焊接到粗糙化处理后的所述铜膜层14的所述表面上。\n\n[0032]具体地，于本揭示其中的一实施例中，所述处理方法200包括步骤210，提供基板10，所述基板10包括基底12和设置在所述基底12上的铜膜层14，以及步骤220，对所述铜膜层14的表面进行粗糙化处理。通过本揭示实施例能提升所述铜膜层14的所述表面的粗糙度，利于次毫米发光二极管焊接到所述铜膜层14的所述表面上。本揭示实施例还能降低所述次毫米发光二极管的基板10制作成本，提升生产良率和提高所述次毫米发光二极管在所述铜膜层14的所述表面上的焊锡抓力。\n\n[0033]具体地，于本揭示其中的一实施例中，当对所述铜膜层14的表面进行粗糙化处理后，所述铜膜层14的所述表面的粗糙度从纳米级变化成微米级。例如如图3所示，当对所述铜膜层14的表面进行粗糙化处理前，所述铜膜层14的所述表面的粗糙度为纳米级。所述铜膜层14的所述表面的粗糙度例如为0.85nm。例如如图4所示，当对所述铜膜层14的表面进行粗糙化处理后，所述铜膜层14的所述表面的粗糙度为微米级。\n\n[0034]具体地，于本揭示其中的一实施例中，所述基板10是经过薄膜晶体管(thin filmtransistor,TFT))制程形成的玻璃基板。所述铜膜层14铜是通过物理气相沉积的方式镀到所述基底12上。\n\n[0035]具体地，于本揭示其中的一实施例中，所述粗糙化处理是使用大气压等离子体(atmospheric pressure plasma,AP plasma)对所述铜膜层14的所述表面进行轰击，使所述铜膜层14的所述表面的裸漏铜晶粒大小变化，提升所述铜膜层14的所述表面的粗糙度。具体地，于本揭示其中的一实施例中，所述大气压等离子体的功率范围在1KW和1000KW之间。具体地，于本揭示其中的一实施例中，所述大气压等离子体的功率与所述铜膜层14的面积为正相关关系。例如，所述铜膜层14的面积愈大，所述大气压等离子体的功率愈大。例如，所述铜膜层14的面积愈小，所述大气压等离子体的功率愈小。\n\n[0036]具体地，于本揭示其中的一实施例中，所述大气压等离子体是在流通的惰性气体环境下，对所述铜膜层14的所述表面进行轰击。所述惰性气体例如为N2或Ar。具体地，于本揭示其中的一实施例中，所述大气压等离子体对所述铜膜层14的所述表面进行轰击的时间范围在10秒和600秒之间。具体地，于本揭示其中的一实施例中，所述大气压等离子体对所述铜膜层14的所述表面进行轰击的时间与所述铜膜层14的面积为正相关关系。例如，所述铜膜层14的面积愈大，所述大气压等离子体对所述铜膜层14的所述表面进行轰击的时间愈大。例如，所述铜膜层14的面积愈小，所述大气压等离子体对所述铜膜层14的所述表面进行轰击的时间愈小。\n\n[0037]具体地，于本揭示其中的一实施例中，所述铜膜层14的所述表面的裸漏铜晶粒大小变化是从纳米级变化成微米级。例如如图3所示，当对所述铜膜层14的表面进行粗糙化处理前，所述铜膜层14的所述表面的粗糙度为纳米级。所述铜膜层14的所述表面的粗糙度例如为0.85nm。例如如图4所示，当对所述铜膜层14的表面进行粗糙化处理后，所述铜膜层14的所述表面的粗糙度为微米级。通过本揭示实施例能提升所述铜膜层14的所述表面的粗糙度，利于次毫米发光二极管焊接到所述铜膜层14的所述表面上。\n\n[0038]参照图5，本揭示实施例还提供次毫米发光二极管装置30(mini light emittingdiode device,mini LED device)。所述次毫米发光二极管装置30包括基板10以及次毫米发光二极管20。所述基板10包括基底12和设置在所述基底12上的铜膜层14。所述次毫米发光二极管20设置在所述铜膜层12的表面上。所述铜膜层14的所述表面的粗糙度是微米级。由于本揭示实施例的所述铜膜层14的所述表面的粗糙度为微米级，利于次毫米发光二极管20焊接到所述铜膜层14的所述表面上。本揭示实施例还能降低所述次毫米发光二极管20的基板10制作成本，提升生产良率和提高所述次毫米发光二极管20在所述铜膜层14的所述表面上的焊锡抓力。\n\n[0039]次毫米发光二极管装置30在显示上主要有两种应用，一种应用是作为自发光LED显示，同小间距LED类似，由于封装形式上不需要打金线，相比于小间距LED，即使在同样的芯片尺寸上次毫米发光二极管装置30也可以做更小的点间距显示。另外一种应用是在背光上的应用。相比于现有的背光LED模组，Mini LED背光模组将采用更加密集的芯片排布来减少混光距离，做到超薄的光源模组。另外配合局部调光(local dimming)控制，Mini LED背光模组将有更好的对比度和高动态范围图像(high-dynamic range,HDR)显示效果。\n\n[0040]次毫米发光二极管装置30在显示的基本要素包括功耗，成本，寿命，点间距，亮度和对比度等上均具有良好性能。\n\n[0041]综上所述，由于本揭示的实施例中的次毫米发光二极管的基板处理方法、次毫米发光二极管装置及其处理方法中，所述次毫米发光二极管的基板处理方法包括提供基板，所述基板包括基底和设置在所述基底上的铜膜层以及对所述铜膜层的表面进行粗糙化处理。通过本揭示实施例能提升所述铜膜层的所述表面的粗糙度，利于所述次毫米发光二极管焊接到所述铜膜层的所述表面上。本揭示实施例还能降低所述次毫米发光二极管的基板制作成本，提升生产良率和提高所述次毫米发光二极管在所述铜膜层的所述表面上的焊锡抓力。\n\n[0042]尽管已经相对于一个或多个实现方式示出并描述了本揭示，但是本领域技术人员基于对本说明书和附图的阅读和理解将会想到等价变型和修改。本揭示包括所有这样的修改和变型，并且仅由所附权利要求的范围限制。特别地关于由上述组件执行的各种功能，用于描述这样的组件的术语旨在对应于执行所述组件的指定功能(例如其在功能上是等价的)的任意组件(除非另外指示)，即使在结构上与执行本文所示的本说明书的示范性实现方式中的功能的公开结构不等同。此外，尽管本说明书的特定特征已经相对于若干实现方式中的仅一个被公开，但是这种特征可以与如可以对给定或特定应用而言是期望和有利的其他实现方式的一个或多个其他特征组合。而且，就术语“包括”、“具有”、“含有”或其变形被用在具体实施方式或权利要求中而言，这样的术语旨在以与术语“包含”相似的方式包括。\n\n[0043]以上仅是本揭示的优选实施方式，应当指出，对于本领域普通技术人员，在不脱离本揭示原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本揭示的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10731, 23785, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种液晶盒和自发光显示装置。\n\n背景技术\n\n[0002]透明显示技术作为一种新兴的显示技术，能够给广大消费者带来更新颖的视觉感受。在透明显示器件工作的过程中，用户不仅能够观看到面板上显示的内容，同时还能透过面板观看到面板后的物体。透明显示可融合多点触摸、智能显示等技术，作为公共信息显示的终端，用在百货陈列窗、冰箱门、公交车站点、汽车前风挡玻璃、自动售货机等各个领域，具有广阔的市场前景。\n\n[0003]目前次毫米发光二极管(mini-light-emitting diode，Mini LED)或者微型发光二极管(Micro-light-emitting diode，Micro LED)作为潜在的下一代显示技术，受到了广泛的关注。目前基于液晶显示屏(liquid crystal display，LCD)或者有机发光二极管(Organic Light Emitting Diode，OLED)的透明显示器被大量研究，而透明显示器在很应用场景使用局限且显示效果欠佳。\n\n[0004]申请内容\n\n[0005]本申请实施例提供一种液晶盒，实现液晶盒在非透明态和透明态的相互转变，使得安装该液晶盒的显示装置既可以在非透明态态下能够更好的输出面板信息，也可以在透明态态下实现显示装置透明的效果，为如何扩大应用范围提供了解决方案。\n\n[0006]为解决上述问题，第一方面，本申请提供一种液晶盒，所述液晶盒包括第一取向膜、第二取向膜和第一导电玻璃基板和第二导电玻璃基板；\n\n[0007]所述第一导电玻璃基板和第二导电玻璃基板相对设置，并形成一个密闭空间；所述第一取向膜设置于所述第一导电玻璃基板远离所述第二导电玻璃基板的一侧；所述第二取向膜设置于所述第二导电玻璃基板远离所述第一导电玻璃基板的一侧；所述密闭空间内填充有液晶分子和二色性染料分子的混合液；\n\n[0008]其中，当在所述第一取向膜和所述第二取向膜之间施加驱动电压时，所述二色性染料分子随液晶分子垂直偏转；当在所述第一取向膜和所述第二取向膜之间未施加驱动电压时，所述二色性染料分子随液晶分子平行于所述第一导电玻璃基板排列。\n\n[0009]进一步的，所述二色性染料分子占所述混合液的比例为0.5～10wt％。\n\n[0010]进一步的，所述混合液还包括有机溶剂。\n\n[0011]进一步的，所述第一导电玻璃基板为ITO导电玻璃基板。\n\n[0012]进一步的，所述第一取向膜和所述第二取向膜均为聚酰亚胺薄膜。\n\n[0013]进一步的，所述第一取向膜和第二取向膜分别为平行取向膜和垂直取向膜。\n\n[0014]进一步的，所述第一取向膜和第二取向膜的取向方向形成一夹角，所述夹角的取值范围为(0°，180°)。\n\n[0015]第二方面，本申请提供一种自发光显示装置；所述自发光显示装置包括驱动电路，自发光显示面板和如第一方面所述的液晶盒；所述驱动电路用于向所述第一取向膜和所述第二取向膜之间施加驱动电压；\n\n[0016]其中，所述自发光显示面板为透明的自发光显示面板，所述液晶盒与所述自发光显示面板相对设置，且所述液晶盒设置在所述自发光显示面板的后方。\n\n[0017]进一步的，所述液晶盒包括透光区，所述液晶盒的透光区和所述自发光显示面板的显示区的面积相等。\n\n[0018]进一步的，所述自发光显示面板为Mini LED显示面板、Micro LED显示面板或OLED显示面板。\n\n[0019]进一步的，所述二色性染料分子占所述混合液的比例为0.5～10wt％。\n\n[0020]进一步的，所述混合液还包括有机溶剂。\n\n[0021]进一步的，所述第一导电玻璃基板为ITO导电玻璃基板。\n\n[0022]进一步的，所述第一取向膜和所述第二取向膜均为聚酰亚胺薄膜。\n\n[0023]进一步的，所述第一取向膜和第二取向膜分别为平行取向膜和垂直取向膜。\n\n[0024]进一步的，所述第一取向膜和第二取向膜的取向方向形成一夹角，所述夹角的取值范围为(0°，180°)。\n\n[0025]有益效果:本申请实施例中提供一种液晶盒，液晶盒包括第一取向膜、第二取向膜和第一导电玻璃基板和第二导电玻璃基板；第一导电玻璃基板和第二导电玻璃基板相对设置，并形成一个密闭空间；第一取向膜设置于第一导电玻璃基板远离第二导电玻璃基板的一侧；第二取向膜设置于第二导电玻璃基板远离第一导电玻璃基板的一侧；密闭空间内填充有液晶分子和二色性染料分子的混合液；其中，当在第一取向膜和第二取向膜之间施加驱动电压时，二色性染料分子随液晶分子垂直偏转，所述液晶盒为透明态；当在第一取向膜和第二取向膜之间未施加驱动电压时，二色性染料分子随液晶分子平行于第一导电玻璃基板排列，所述液晶盒为非透明态，从而实现液晶盒在透明态和非透明态的相互转变，使得安装该液晶盒的透明显示装置既可以在非透明态态下能够更好的输出面板信息，也可以在透明态态下实现透明显示装置透明的效果，扩大了透明显示装置应用场景。\n\n附图说明\n\n[0026]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0027]图1是本申请实施例提供一种液晶盒的一个实施例结构示意图；\n\n[0028]图2是本申请实施例提供一种自发光显示装置的一个实施例结构示意图。\n\n具体实施方式\n\n[0029]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0030]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0031]目前基于液晶显示屏(liquid crystal display，LCD)或者有机发光二极管(Organic Light Emitting Diode，OLED)的透明显示器被大量研究，而Mini LED或者MicroLED在透明显示方面的研究还较少，应用场景局限。\n\n[0032]基于此，本申请实施例提供一种液晶盒和自发光显示装置，以下分别进行详细说明。\n\n[0033]首先，本申请实施例中提供一种液晶盒，所述液晶盒包括第一取向膜、第二取向膜和第一导电玻璃基板和第二导电玻璃基板；\n\n[0034]所述第一导电玻璃基板和第二导电玻璃基板相对设置，并形成一个密闭空间；所述第一取向膜设置于所述第一导电玻璃基板远离所述第二导电玻璃基板的一侧；所述第二取向膜设置于所述第二导电玻璃基板远离所述第一导电玻璃基板的一侧；所述密闭空间内填充有液晶分子和二色性染料分子的混合液；\n\n[0035]具体的液晶分子与二色性染料分子是均匀混合的，二色性染料分子均匀的分布在混合液中。\n\n[0036]其中，当在所述第一取向膜和所述第二取向膜之间施加驱动电压时，所述二色性染料分子随液晶分子垂直偏转；当在所述第一取向膜和所述第二取向膜之间未施加驱动电压时，所述二色性染料分子随液晶分子平行于第一导电玻璃基板排列。\n\n[0037]具体的，二色性染料分子是不具备电极性的，因此是随着液晶分子的运动而运动的。\n\n[0038]具体的，二色性染料分子用于吸收光，且二色性染料分子可见光吸收光谱介于400至780纳米之间。\n\n[0039]如图1，图1为本申请实施例中液晶盒的一个实施例结构示意图，该液晶盒包括第一取向膜101、第二取向膜102和第一导电玻璃基板103和第二导电玻璃基板104；\n\n[0040]所述第一导电玻璃基板103和第二导电玻璃基板104相对设置，并形成一个密闭空间；所述第一取向膜101设置于所述第一导电玻璃基板103远离所述第二导电玻璃基板104的一侧；所述第二取向膜102设置于所述第二导电玻璃基板104远离所述第一导电玻璃基板103的一侧；所述密闭空间内填充有液晶分子105和二色性染料分子106的混合液；\n\n[0041]其中，第一取向膜101为平行取向膜，第二取向膜102为垂直取向膜。\n\n[0042]如图1所示，其中，当在所述第一取向膜101和所述第二取向膜102之间施加驱动电压时，所述二色性染料分子106随液晶分子105垂直偏转；当在所述第一取向膜101和所述第二取向膜102之间未施加驱动电压时，所述二色性染料分子106随液晶分子105平行于基板排列。\n\n[0043]具体的，当在所述第一取向膜101和所述第二取向膜102之间施加驱动电压时，所述二色性染料分子106随液晶分子105垂直偏转，此时当光照射该液晶盒时，经过垂直偏转的液晶分子105和二色性染料分子106之间具有空隙，因此光可通过液晶盒，此时液晶盒为透明态。\n\n[0044]当在所述第一取向膜101和所述第二取向膜102之间停止施加驱动电压时，所述二色性染料分子106随液晶分子105平行于基板排列，此时液晶分子105和二色性染料分子106之间无空隙，当光通过该液晶盒时，其中经过偏转且平行于基板排列的液晶分子105将挡住这些可见光和二色性染料分子106吸收这些可见光，此时液晶盒为非透明态。\n\n[0045]本申请实施例中通过提供一种液晶盒，当在第一取向膜和第二取向膜之间施加驱动电压时，二色性染料分子随液晶分子垂直偏转，所述液晶盒为透明态；当在第一取向膜和第二取向膜之间未施加驱动电压时，二色性染料分子随液晶分子平行于第一导电玻璃基板排列，所述液晶盒为非透明态，从而实现液晶盒在透明态和非透明态的相互转变，使得安装该液晶盒的显示装置既可以在非透明态态下能够更好的输出面板信息，也可以在透明态下实现透明显示装置透明的效果，扩大了透明显示装置的应用范围。\n\n[0046]在上述实施例的基础上，在本申请的另一个具体实施例中，二色性染料分子占所述混合液的比例为0.5～10wt％。\n\n[0047]具体的，当二色性染料分子占所述混合液的比例为0.5～10wt％时，即可实现本申请实施了的要求，具体比例不做限定。\n\n[0048]在上述实施例的基础上，在本申请的另一个具体实施例中，所述混合液还包括有机溶剂，如三氯甲烷，本申请实施例并不对有机溶剂做限定，具体视情况而定。\n\n[0049]一般来说，为了更好的使二色性染料分子和液晶分子的相互融合，当添加了有机溶剂，可以有效的使二色性染料分子均匀分布于混合液中。\n\n[0050]在上述实施例的基础上，在本申请的一个具体实施例中，所述第一导电玻璃基板可以为氧化铟锡(Indium tin oxide，ITO)导电玻璃基板；本申请对所述导电玻璃基板并不做限定，具体视实际情况而定。\n\n[0051]在上述实施例的基础上，在本申请的另一个具体实施例中，所述第一取向膜和所述第二取向膜均为聚酰亚胺薄膜。\n\n[0052]具体的，聚酰亚胺是指主链上含有酰亚胺环(-CO-NH-CO-)的一类聚合物，其中以含有酞酰亚胺结构的聚合物最为重要。聚酰亚胺作为一种特种工程材料，已广泛应用在航空、航天、微电子、纳米、液晶、分离膜、激光等领域。聚酰亚胺，因其在性能和合成方面的突出特点，不论是作为结构材料或是作为功能性材料，其性能已经得到广泛的认可。\n\n[0053]在上述实施例的基础上，在本申请的另一个具体实施例中，所述第一取向膜和第二取向膜分别为平行取向膜和垂直取向膜。\n\n[0054]具体的，第一取向膜和第二取向膜只要满足同时存在平行取向膜和垂直取向膜即可，具体不做限定。\n\n[0055]在上述实施例的基础上，在本申请的另一个具体实施例中，所述第一取向膜和第二取向膜的取向方向形成一夹角，所述夹角的取值范围为(0°，180°)。\n\n[0056]其中，为了使液晶分子更好的实现偏转，当设置有一定预倾角的平行取向膜和垂直取向膜，可以提高液晶分子的偏转效率。\n\n[0057]为了更好实施本申请实施例中的液晶盒，在液晶盒的基础之上，本申请实施例中还提供一种自发光显示装置，所述自发光显示装置包括驱动电路，自发光显示面板和液晶盒；所述驱动电路用于向所述第一取向膜和所述第二取向膜之间施加驱动电压；\n\n[0058]一般说来，自发光显示面板是不要背光源的，所述自发光显示面板的材料均采用透明材料，即可实现透明显示。\n\n[0059]其中，所述自发光显示面板为透明的自发光显示面板，所述液晶盒与所述自发光显示面板相对设置，且所述液晶盒设置在所述自发光显示面板的后方。\n\n[0060]如图2所示，为本申请实施例中自发光显示装置的一个实施例结构示意图，该自发光显示装置包括驱动电路，自发光显示面板201和液晶盒202；所述驱动电路用于向所述第一取向膜和所述第二取向膜之间施加驱动电压。\n\n[0061]其中，所述自发光显示面板201为透明的自发光显示面板，所述液晶盒302与所述自发光显示面板201相对设置，且所述液晶盒202设置在所述自发光显示面板201的后方。\n\n[0062]通过采用如上实施例中描述的自发光显示装置，将自发光显示面板与液晶盒相结合，使自发光显示屏的背景能够实现为透明态与非透明态之间转换，进一步扩大了应用场景。\n\n[0063]在上述实施例的基础上，在本申请的另一个具体实施例中，所述液晶盒包括透光区，所述液晶盒的透光区和所述自发光显示面板的显示区的面积相等。\n\n[0064]在上述实施例的基础上，在本申请的另一个具体实施例中，所述自发光显示面板可以为Mini LED显示面板、Micro LED显示面板或OLED显示面板，具体不作限定。\n\n[0065]在上述实施例的基础上，在本申请的另一个具体实施例中，所述二色性染料分子占所述混合液的比例为0.5～10wt％。\n\n[0066]在上述实施例的基础上，在本申请的另一个具体实施例中，所述混合液还包括有机溶剂。\n\n[0067]在上述实施例的基础上，在本申请的另一个具体实施例中，所述第一导电玻璃基板为ITO导电玻璃基板。\n\n[0068]在上述实施例的基础上，在本申请的另一个具体实施例中，所述第一取向膜和所述第二取向膜均为聚酰亚胺薄膜。\n\n[0069]在上述实施例的基础上，在本申请的另一个具体实施例中，所述第一取向膜和第二取向膜分别为平行取向膜和垂直取向膜。\n\n[0070]在上述实施例的基础上，在本申请的另一个具体实施例中，所述第一取向膜和第二取向膜的取向方向形成一夹角，所述夹角的取值范围为(0°，180°)。\n\n[0071]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见上文其他实施例中的详细描述，此处不再赘述。\n\n[0072]具体实施时，以上各个单元或结构可以作为独立的实体来实现，也可以进行任意组合，作为同一或若干个实体来实现，以上各个单元或结构的具体实施可参见前面的方法实施例，在此不再赘述。\n\n[0073]以上各个操作的具体实施可参见前面的实施例，在此不再赘述。\n\n[0074]以上对本申请实施例所提供的一种液晶盒和自发光显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种液晶盒和自发光显示装置。\n\n背景技术\n\n[0002]透明显示技术作为一种新兴的显示技术，能够给广大消费者带来更新颖的视觉感受。在透明显示器件工作的过程中，用户不仅能够观看到面板上显示的内容，同时还能透过面板观看到面板后的物体。透明显示可融合多点触摸、智能显示等技术，作为公共信息显示的终端，用在百货陈列窗、冰箱门、公交车站点、汽车前风挡玻璃、自动售货机等各个领域，具有广阔的市场前景。\n\n[0003]目前次毫米发光二极管(mini-light-emitting diode，Mini LED)或者微型发光二极管(Micro-light-emitting diode，Micro LED)作为潜在的下一代显示技术，受到了广泛的关注。目前基于液晶显示屏(liquid crystal display，LCD)或者有机发光二极管(Organic Light Emitting Diode，OLED)的透明显示器被大量研究，而透明显示器在很应用场景使用局限且显示效果欠佳。\n\n[0004]申请内容\n\n[0005]本申请实施例提供一种液晶盒，实现液晶盒在非透明态和透明态的相互转变，使得安装该液晶盒的显示装置既可以在非透明态态下能够更好的输出面板信息，也可以在透明态态下实现显示装置透明的效果，为如何扩大应用范围提供了解决方案。\n\n[0006]为解决上述问题，第一方面，本申请提供一种液晶盒，所述液晶盒包括第一取向膜、第二取向膜和第一导电玻璃基板和第二导电玻璃基板；\n\n[0007]所述第一导电玻璃基板和第二导电玻璃基板相对设置，并形成一个密闭空间；所述第一取向膜设置于所述第一导电玻璃基板远离所述第二导电玻璃基板的一侧；所述第二取向膜设置于所述第二导电玻璃基板远离所述第一导电玻璃基板的一侧；所述密闭空间内填充有液晶分子和二色性染料分子的混合液；\n\n[0008]其中，当在所述第一取向膜和所述第二取向膜之间施加驱动电压时，所述二色性染料分子随液晶分子垂直偏转；当在所述第一取向膜和所述第二取向膜之间未施加驱动电压时，所述二色性染料分子随液晶分子平行于所述第一导电玻璃基板排列。\n\n[0009]进一步的，所述二色性染料分子占所述混合液的比例为0.5～10wt％。\n\n[0010]进一步的，所述混合液还包括有机溶剂。\n\n[0011]进一步的，所述第一导电玻璃基板为ITO导电玻璃基板。\n\n[0012]进一步的，所述第一取向膜和所述第二取向膜均为聚酰亚胺薄膜。\n\n[0013]进一步的，所述第一取向膜和第二取向膜分别为平行取向膜和垂直取向膜。\n\n[0014]进一步的，所述第一取向膜和第二取向膜的取向方向形成一夹角，所述夹角的取值范围为(0°，180°)。\n\n[0015]第二方面，本申请提供一种自发光显示装置；所述自发光显示装置包括驱动电路，自发光显示面板和如第一方面所述的液晶盒；所述驱动电路用于向所述第一取向膜和所述第二取向膜之间施加驱动电压；\n\n[0016]其中，所述自发光显示面板为透明的自发光显示面板，所述液晶盒与所述自发光显示面板相对设置，且所述液晶盒设置在所述自发光显示面板的后方。\n\n[0017]进一步的，所述液晶盒包括透光区，所述液晶盒的透光区和所述自发光显示面板的显示区的面积相等。\n\n[0018]进一步的，所述自发光显示面板为Mini LED显示面板、Micro LED显示面板或OLED显示面板。\n\n[0019]进一步的，所述二色性染料分子占所述混合液的比例为0.5～10wt％。\n\n[0020]进一步的，所述混合液还包括有机溶剂。\n\n[0021]进一步的，所述第一导电玻璃基板为ITO导电玻璃基板。\n\n[0022]进一步的，所述第一取向膜和所述第二取向膜均为聚酰亚胺薄膜。\n\n[0023]进一步的，所述第一取向膜和第二取向膜分别为平行取向膜和垂直取向膜。\n\n[0024]进一步的，所述第一取向膜和第二取向膜的取向方向形成一夹角，所述夹角的取值范围为(0°，180°)。\n\n[0025]有益效果:本申请实施例中提供一种液晶盒，液晶盒包括第一取向膜、第二取向膜和第一导电玻璃基板和第二导电玻璃基板；第一导电玻璃基板和第二导电玻璃基板相对设置，并形成一个密闭空间；第一取向膜设置于第一导电玻璃基板远离第二导电玻璃基板的一侧；第二取向膜设置于第二导电玻璃基板远离第一导电玻璃基板的一侧；密闭空间内填充有液晶分子和二色性染料分子的混合液；其中，当在第一取向膜和第二取向膜之间施加驱动电压时，二色性染料分子随液晶分子垂直偏转，所述液晶盒为透明态；当在第一取向膜和第二取向膜之间未施加驱动电压时，二色性染料分子随液晶分子平行于第一导电玻璃基板排列，所述液晶盒为非透明态，从而实现液晶盒在透明态和非透明态的相互转变，使得安装该液晶盒的透明显示装置既可以在非透明态态下能够更好的输出面板信息，也可以在透明态态下实现透明显示装置透明的效果，扩大了透明显示装置应用场景。\n\n附图说明\n\n[0026]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0027]图1是本申请实施例提供一种液晶盒的一个实施例结构示意图；\n\n[0028]图2是本申请实施例提供一种自发光显示装置的一个实施例结构示意图。\n\n具体实施方式\n\n[0029]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0030]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0031]目前基于液晶显示屏(liquid crystal display，LCD)或者有机发光二极管(Organic Light Emitting Diode，OLED)的透明显示器被大量研究，而Mini LED或者MicroLED在透明显示方面的研究还较少，应用场景局限。\n\n[0032]基于此，本申请实施例提供一种液晶盒和自发光显示装置，以下分别进行详细说明。\n\n[0033]首先，本申请实施例中提供一种液晶盒，所述液晶盒包括第一取向膜、第二取向膜和第一导电玻璃基板和第二导电玻璃基板；\n\n[0034]所述第一导电玻璃基板和第二导电玻璃基板相对设置，并形成一个密闭空间；所述第一取向膜设置于所述第一导电玻璃基板远离所述第二导电玻璃基板的一侧；所述第二取向膜设置于所述第二导电玻璃基板远离所述第一导电玻璃基板的一侧；所述密闭空间内填充有液晶分子和二色性染料分子的混合液；\n\n[0035]具体的液晶分子与二色性染料分子是均匀混合的，二色性染料分子均匀的分布在混合液中。\n\n[0036]其中，当在所述第一取向膜和所述第二取向膜之间施加驱动电压时，所述二色性染料分子随液晶分子垂直偏转；当在所述第一取向膜和所述第二取向膜之间未施加驱动电压时，所述二色性染料分子随液晶分子平行于第一导电玻璃基板排列。\n\n[0037]具体的，二色性染料分子是不具备电极性的，因此是随着液晶分子的运动而运动的。\n\n[0038]具体的，二色性染料分子用于吸收光，且二色性染料分子可见光吸收光谱介于400至780纳米之间。\n\n[0039]如图1，图1为本申请实施例中液晶盒的一个实施例结构示意图，该液晶盒包括第一取向膜101、第二取向膜102和第一导电玻璃基板103和第二导电玻璃基板104；\n\n[0040]所述第一导电玻璃基板103和第二导电玻璃基板104相对设置，并形成一个密闭空间；所述第一取向膜101设置于所述第一导电玻璃基板103远离所述第二导电玻璃基板104的一侧；所述第二取向膜102设置于所述第二导电玻璃基板104远离所述第一导电玻璃基板103的一侧；所述密闭空间内填充有液晶分子105和二色性染料分子106的混合液；\n\n[0041]其中，第一取向膜101为平行取向膜，第二取向膜102为垂直取向膜。\n\n[0042]如图1所示，其中，当在所述第一取向膜101和所述第二取向膜102之间施加驱动电压时，所述二色性染料分子106随液晶分子105垂直偏转；当在所述第一取向膜101和所述第二取向膜102之间未施加驱动电压时，所述二色性染料分子106随液晶分子105平行于基板排列。\n\n[0043]具体的，当在所述第一取向膜101和所述第二取向膜102之间施加驱动电压时，所述二色性染料分子106随液晶分子105垂直偏转，此时当光照射该液晶盒时，经过垂直偏转的液晶分子105和二色性染料分子106之间具有空隙，因此光可通过液晶盒，此时液晶盒为透明态。\n\n[0044]当在所述第一取向膜101和所述第二取向膜102之间停止施加驱动电压时，所述二色性染料分子106随液晶分子105平行于基板排列，此时液晶分子105和二色性染料分子106之间无空隙，当光通过该液晶盒时，其中经过偏转且平行于基板排列的液晶分子105将挡住这些可见光和二色性染料分子106吸收这些可见光，此时液晶盒为非透明态。\n\n[0045]本申请实施例中通过提供一种液晶盒，当在第一取向膜和第二取向膜之间施加驱动电压时，二色性染料分子随液晶分子垂直偏转，所述液晶盒为透明态；当在第一取向膜和第二取向膜之间未施加驱动电压时，二色性染料分子随液晶分子平行于第一导电玻璃基板排列，所述液晶盒为非透明态，从而实现液晶盒在透明态和非透明态的相互转变，使得安装该液晶盒的显示装置既可以在非透明态态下能够更好的输出面板信息，也可以在透明态下实现透明显示装置透明的效果，扩大了透明显示装置的应用范围。\n\n[0046]在上述实施例的基础上，在本申请的另一个具体实施例中，二色性染料分子占所述混合液的比例为0.5～10wt％。\n\n[0047]具体的，当二色性染料分子占所述混合液的比例为0.5～10wt％时，即可实现本申请实施了的要求，具体比例不做限定。\n\n[0048]在上述实施例的基础上，在本申请的另一个具体实施例中，所述混合液还包括有机溶剂，如三氯甲烷，本申请实施例并不对有机溶剂做限定，具体视情况而定。\n\n[0049]一般来说，为了更好的使二色性染料分子和液晶分子的相互融合，当添加了有机溶剂，可以有效的使二色性染料分子均匀分布于混合液中。\n\n[0050]在上述实施例的基础上，在本申请的一个具体实施例中，所述第一导电玻璃基板可以为氧化铟锡(Indium tin oxide，ITO)导电玻璃基板；本申请对所述导电玻璃基板并不做限定，具体视实际情况而定。\n\n[0051]在上述实施例的基础上，在本申请的另一个具体实施例中，所述第一取向膜和所述第二取向膜均为聚酰亚胺薄膜。\n\n[0052]具体的，聚酰亚胺是指主链上含有酰亚胺环(-CO-NH-CO-)的一类聚合物，其中以含有酞酰亚胺结构的聚合物最为重要。聚酰亚胺作为一种特种工程材料，已广泛应用在航空、航天、微电子、纳米、液晶、分离膜、激光等领域。聚酰亚胺，因其在性能和合成方面的突出特点，不论是作为结构材料或是作为功能性材料，其性能已经得到广泛的认可。\n\n[0053]在上述实施例的基础上，在本申请的另一个具体实施例中，所述第一取向膜和第二取向膜分别为平行取向膜和垂直取向膜。\n\n[0054]具体的，第一取向膜和第二取向膜只要满足同时存在平行取向膜和垂直取向膜即可，具体不做限定。\n\n[0055]在上述实施例的基础上，在本申请的另一个具体实施例中，所述第一取向膜和第二取向膜的取向方向形成一夹角，所述夹角的取值范围为(0°，180°)。\n\n[0056]其中，为了使液晶分子更好的实现偏转，当设置有一定预倾角的平行取向膜和垂直取向膜，可以提高液晶分子的偏转效率。\n\n[0057]为了更好实施本申请实施例中的液晶盒，在液晶盒的基础之上，本申请实施例中还提供一种自发光显示装置，所述自发光显示装置包括驱动电路，自发光显示面板和液晶盒；所述驱动电路用于向所述第一取向膜和所述第二取向膜之间施加驱动电压；\n\n[0058]一般说来，自发光显示面板是不要背光源的，所述自发光显示面板的材料均采用透明材料，即可实现透明显示。\n\n[0059]其中，所述自发光显示面板为透明的自发光显示面板，所述液晶盒与所述自发光显示面板相对设置，且所述液晶盒设置在所述自发光显示面板的后方。\n\n[0060]如图2所示，为本申请实施例中自发光显示装置的一个实施例结构示意图，该自发光显示装置包括驱动电路，自发光显示面板201和液晶盒202；所述驱动电路用于向所述第一取向膜和所述第二取向膜之间施加驱动电压。\n\n[0061]其中，所述自发光显示面板201为透明的自发光显示面板，所述液晶盒302与所述自发光显示面板201相对设置，且所述液晶盒202设置在所述自发光显示面板201的后方。\n\n[0062]通过采用如上实施例中描述的自发光显示装置，将自发光显示面板与液晶盒相结合，使自发光显示屏的背景能够实现为透明态与非透明态之间转换，进一步扩大了应用场景。\n\n[0063]在上述实施例的基础上，在本申请的另一个具体实施例中，所述液晶盒包括透光区，所述液晶盒的透光区和所述自发光显示面板的显示区的面积相等。\n\n[0064]在上述实施例的基础上，在本申请的另一个具体实施例中，所述自发光显示面板可以为Mini LED显示面板、Micro LED显示面板或OLED显示面板，具体不作限定。\n\n[0065]在上述实施例的基础上，在本申请的另一个具体实施例中，所述二色性染料分子占所述混合液的比例为0.5～10wt％。\n\n[0066]在上述实施例的基础上，在本申请的另一个具体实施例中，所述混合液还包括有机溶剂。\n\n[0067]在上述实施例的基础上，在本申请的另一个具体实施例中，所述第一导电玻璃基板为ITO导电玻璃基板。\n\n[0068]在上述实施例的基础上，在本申请的另一个具体实施例中，所述第一取向膜和所述第二取向膜均为聚酰亚胺薄膜。\n\n[0069]在上述实施例的基础上，在本申请的另一个具体实施例中，所述第一取向膜和第二取向膜分别为平行取向膜和垂直取向膜。\n\n[0070]在上述实施例的基础上，在本申请的另一个具体实施例中，所述第一取向膜和第二取向膜的取向方向形成一夹角，所述夹角的取值范围为(0°，180°)。\n\n[0071]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见上文其他实施例中的详细描述，此处不再赘述。\n\n[0072]具体实施时，以上各个单元或结构可以作为独立的实体来实现，也可以进行任意组合，作为同一或若干个实体来实现，以上各个单元或结构的具体实施可参见前面的方法实施例，在此不再赘述。\n\n[0073]以上各个操作的具体实施可参见前面的实施例，在此不再赘述。\n\n[0074]以上对本申请实施例所提供的一种液晶盒和自发光显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10732, 23786, '技术领域\n\n[0001]本申请涉及显示技术领域，更具体地说，涉及一种像素驱动电路、驱动方法及其显示面板、显示装置。\n\n背景技术\n\n[0002]随着显示设备的发展，对于显示设备的驱动电路成为了重要的研究热点。对于电流型驱动的显示设备，其发光亮度取决于流过Driving TFT(驱动型薄膜晶体管)的栅源电流。例如，采用传统驱动电路应用于Micro LED显示面板，LED的亮度-电流曲线斜率很大，微弱的电流变化就会引起人眼可察觉的亮度改变。因此Micro LED面板如果采用传统驱动电路，难以精确控制LED的驱动电流，显示精度低。\n\n[0003]在实现过程中，发明人发现传统技术中至少存在如下问题：采用传统驱动电路，难以精确控制显示面板中LED的驱动电流，显示精度低。\n\n发明内容\n\n[0004]基于此，有必要针对传统的采用传统驱动电路，难以精确控制显示面板中LED的驱动电流，显示精度低的问题，提供一种像素驱动电路、驱动方法及其显示面板、显示装置。\n\n[0005]为了实现上述目的，本发明实施例提供了一种像素驱动电路，包括：\n\n[0006]第一薄膜晶体管，第一薄膜晶体管的栅极连接第一节点，源极连接第二节点，漏极用于接入电源高电压；\n\n[0007]第二薄膜晶体管，第二薄膜晶体管的栅极用于接入第N行像素的扫描信号，源极连接第一节点，漏极用于接入数据信号；\n\n[0008]第一电容，第一电容的一端连接第一节点，另一端连接第三节点；\n\n[0009]第三薄膜晶体管，第三薄膜晶体管的栅极用于接入第N+1行像素的扫描信号，源极连接第三节点，漏极连接第二节点；\n\n[0010]第二电容，第二电容的一端连接第三节点，另一端连接第四节点；\n\n[0011]第四薄膜晶体管，第四薄膜晶体管的栅极用于接入第N+2行像素的扫描信号，源极连接第四节点，漏极连接第二节点；\n\n[0012]第三电容，第三电容的一端连接第四节点，另一端连接第二节点；\n\n[0013]发光二极管，发光二极管的阳极连接第二节点，阴极用于接入电源低电压。\n\n[0014]在其中一个实施例中，像素驱动电路的驱动时序包括五个阶段：在第一阶段，第N行像素的扫描信号保持高电平，第N+1行像素的扫描信号和第N+2行像素的扫描信号分别保持低电平；在第二阶段，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持高电平，第N+2行像素的扫描信号保持低电平；在第三阶段，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持低电平；在第四阶段，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持高电平；在第五阶段，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持低电平。\n\n[0015]在其中一个实施例中，还包括第五薄膜晶体管；\n\n[0016]第五薄膜晶体管的栅极连接控制信号，源极连接第二节点，漏极用于接入参考电压。\n\n[0017]在其中一个实施例中，像素驱动电路的驱动时序包括五个阶段：在第一阶段，控制信号保持高电平，第N行像素的扫描信号保持高电平，第N+1行像素的扫描信号和第N+2行像素的扫描信号分别保持低电平；在第二阶段，控制信号保持低电平，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持高电平，第N+2行像素的扫描信号保持低电平；在第三阶段，控制信号保持低电平，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持低电平；在第四阶段，控制信号保持低电平，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持高电平；在第五阶段，控制信号保持低电平，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持低电平。\n\n[0018]在其中一个实施例中，发光二极管为OLED，Micro LED，Mini LED或μLED。\n\n[0019]另一方面，本发明实施例还提供了一种应用于上述的像素驱动电路的像素驱动方法，包括以下步骤：\n\n[0020]在第一阶段分别对第一电容、第二电容和第三电容充电；\n\n[0021]在第二阶段保持第一电容的电压值不变，分别对第二电容和第三电容放电；\n\n[0022]在第三阶段对第一电容、第二电容和第三电容之间进行电荷分配；\n\n[0023]在第四阶段保持第一电容和第二电容的电压值不变，对第三电容放电；\n\n[0024]在第五阶段对第一电容、第二电容和第三电容之间进行电荷分配；\n\n[0025]在第六阶段控制发光二极管进行发光；\n\n[0026]其中，一帧的显示周期被顺序地划分为第一阶段、第二阶段、第三阶段、第四阶段、第五阶段和第六阶段。\n\n[0027]在其中一个实施例中，在第一阶段分别对第一电容、第二电容和第三电容充电的步骤包括：\n\n[0028]在第一阶段，控制第N行像素的扫描信号保持高电平，第N+1行像素的扫描信号和第N+2行像素的扫描信号分别保持低电平；\n\n[0029]在第二阶段保持第一电容的电压值不变，分别对第二电容和第三电容放电的步骤包括：\n\n[0030]在第二阶段，控制第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持高电平，第N+2行像素的扫描信号保持低电平；\n\n[0031]在第三阶段对第一电容、第二电容和第三电容之间进行电荷分配的步骤包括：\n\n[0032]在第三阶段，控制第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持低电平；\n\n[0033]在第四阶段保持第一电容和第二电容的电压值不变，对第三电容放电的步骤包括：\n\n[0034]在第四阶段，控制第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持高电平；\n\n[0035]在第五阶段对第一电容、第二电容和第三电容之间进行电荷分配的步骤包括：\n\n[0036]在第六阶段，控制第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持低电平。\n\n[0037]另一方面，本发明实施例还提供了一种显示面板，包括如上述任一项的像素驱动电路。\n\n[0038]另一方面，本发明实施例还提供了一种显示装置，包括如上述的显示面板。\n\n[0039]在其中一个实施例中，显示面板为OLED显示面板，Micro LED显示面板，Mini LED显示面板或μLED显示面板。\n\n[0040]上述技术方案中的一个技术方案具有如下优点和有益效果：\n\n[0041]上述的像素驱动电路的各实施例中，基于第一薄膜晶体管的栅极连接第一节点，源极连接第二节点，漏极用于接入电源高电压；第二薄膜晶体管的栅极用于接入第N行像素的扫描信号，源极连接第一节点，漏极用于接入数据信号；第一电容的一端连接第一节点，另一端连接第三节点；第三薄膜晶体管的栅极用于接入第N+1行像素的扫描信号，源极连接第三节点，漏极连接第二节点；第二电容的一端连接第三节点，另一端连接第四节点；第四薄膜晶体管的栅极用于接入第N+2行像素的扫描信号，源极连接第三四节点，漏极连接第二节点；第三电容的一端连接第四节点，另一端连接第二节点；发光二极管的阳极连接第二节点，阴极用于接入电源低电压，进而能够实现采用较低输出电压分辨率的源极芯片进行精细的电流控制。本申请能够通过控制第二薄膜晶体管、第三薄膜晶体管和第四薄膜晶体管的通断，进行两级电容放电及各个电容(第一电容、第二电容和第三电容)之间电荷分配，实现精确控制显示面板中LED的驱动电流，进一步提高了显示精度。\n\n附图说明\n\n[0042]下面将结合附图及实施例对本申请作进一步说明，附图中：\n\n[0043]图1为传统2T1C像素驱动电路的示意图；\n\n[0044]图2为一个实施例中LED的亮度-电流曲线示意图；\n\n[0045]图3为一个实施例中像素驱动电路的第一结构示意图；\n\n[0046]图4为一个实施例中像素驱动电路第一阶段的等效电路示意图；\n\n[0047]图5为一个实施例中像素驱动电路第二阶段的等效电路示意图；\n\n[0048]图6为一个实施例中像素驱动电路第三阶段的等效电路示意图；\n\n[0049]图7为一个实施例中像素驱动电路第四阶段的等效电路示意图；\n\n[0050]图8为一个实施例中像素驱动电路第五阶段的等效电路示意图；\n\n[0051]图9为一个实施例中像素驱动电路的第二结构示意图；\n\n[0052]图10为一个实施例中像素驱动方法的流程示意图。\n\n具体实施方式\n\n[0053]为了对本申请的技术特征、目的和效果有更加清楚的理解，现对照附图详细说明本申请的具体实施方式。\n\n[0054]传统的像素驱动电路如图1所示，其为一种常见的微发光二极管或者有机发光二极管的驱动像素电路示意图。此2T1C像素电路主要包括作为驱动薄膜晶体管(TFT)的薄膜晶体管T1，作为开关薄膜晶体管的薄膜晶体管T2，存储电容C以及发光二极管LED，发光二极管LED可以是微发光二极管或者有机发光二极管，薄膜晶体管T2由相应行像素的扫描信号SCAN控制开关与否，以控制是否输入相应的数据信号Vdata。采用此像素电路，在发光阶段，流过LED的电流ILED由薄膜晶体管T1控制，可以表示为ILED＝k(Vdata-VLED-Vth)2，其中，k为与工艺和设计相关的参数，Vdata为源极芯片(Source IC)输出的数据信号的电压，VLED为LED上的电压，Vth为薄膜晶体管T1的阈值电压。\n\n[0055]如图2所示，其为LED的亮度-电流曲线示意图，对于微发光二极管显示面板来说，LED的亮度-电流曲线斜率很大，微弱的电流变化就会引起人眼可察觉的亮度改变。因此微发光二极管显示面板如果采用传统驱动电路，例如图1所示电路，必须非常精确控制LED的驱动电流，难度较大。因为源极芯片输出电压的分辨率有限，难以精确控制LED电流，使其产生足够多的灰阶。\n\n[0056]而本申请提出的一种像素驱动电路，改进了原有的像素驱动电路，改进后的像素驱动电路在原有像素驱动电路基础上增加两个电容以及两个薄膜晶体管，增加的两个电容与原有的像素电路中的存储电容串联，增加的两个薄膜晶体管分别连接于相邻两个电容之间的公共点以及驱动薄膜晶体管(N型)的源极，能够实现采用较低输出电压分辨率的源极芯片进行精细的电流控制，极大的提高显示效率。\n\n[0057]在一个实施例中，如图3所示，提供了一种像素驱动电路，包括：\n\n[0058]第一薄膜晶体管310，第一薄膜晶体管310的栅极连接第一节点G，源极连接第二节点S，漏极用于接入电源高电压；\n\n[0059]第二薄膜晶体管320，第二薄膜晶体管320的栅极用于接入第N行像素的扫描信号，源极连接第一节点G，漏极用于接入数据信号；\n\n[0060]第一电容330，第一电容330的一端连接第一节点G，另一端连接第三节点A；\n\n[0061]第三薄膜晶体管340，第三薄膜晶体管340的栅极用于接入第N+1行像素的扫描信号，源极连接第三节点A，漏极连接第二节点S；\n\n[0062]第二电容350，第二电容350的一端连接第三节点A，另一端连接第四节点B；\n\n[0063]第四薄膜晶体管360，第四薄膜晶体管360的栅极用于接入第N+2行像素的扫描信号，源极连接第四节点B，漏极连接第二节点S；\n\n[0064]第三电容370，第三电容370的一端连接第四节点B，另一端连接第二节点S；\n\n[0065]发光二极管380，发光二极管380的阳极连接第二节点S，阴极用于接入电源低电压。\n\n[0066]其中，第一节点G指的是第一薄膜晶体管310、第二薄膜晶体管320和第一电容330之间的共用连接点。第二节点S指的是第一薄膜晶体管310、第三薄膜晶体管340、第四薄膜晶体管360、第三电容370和发光二极管380之间的共用连接点。第三节点A指的是第一电容330、第二电容350和第三薄膜晶体管340之间的共用连接点。第四节点B指的是第二电容350、第三电容370和第四薄膜晶体管360之间的共用连接点。\n\n[0067]具体地，可通过第N行像素的扫描控制线向第二薄膜晶体管320的栅极提供第N行像素的扫描信号。可通过第N+1行像素的扫描控制线向第三薄膜晶体管340的栅极提供第N+1行像素的扫描信号。可通过第N+2行像素的扫描控制线向第四薄膜晶体管360的栅极提供第N+2行像素的扫描信号。可通过数据控制线向第二薄膜晶体管320的源极提供数据信号。\n\n[0068]需要说明的是，N为大于或等于1的正整数。\n\n[0069]上述的像素驱动电路的实施例中，基于第一薄膜晶体管310的栅极连接第一节点G，源极连接第二节点S，漏极用于接入电源高电压；第二薄膜晶体管320的栅极用于接入第N行像素的扫描信号，源极连接第一节点G，漏极用于接入数据信号；第一电容330的一端连接第一节点G，另一端连接第三节点A；第三薄膜晶体管340的栅极用于接入第N+1行像素的扫描信号，源极连接第三节点A，漏极连接第二节点S；第二电容350的一端连接第三节点A，另一端连接第四节点B；第四薄膜晶体管360的栅极用于接入第N+2行像素的扫描信号，源极连接第四节点B，漏极连接第二节点S；第三电容370的一端连接第四节点B，另一端连接第二节点S；发光二极管380的阳极连接第二节点S，阴极用于接入电源低电压，进而能够实现采用较低输出电压分辨率的源极芯片进行精细的电流控制。通过控制第二薄膜晶体管320、第三薄膜晶体管340和第四薄膜晶体管360的通断，进行两级电容放电及各个电容(第一电容330、第二电容350和第三电容370)之间电荷分配，实现精确控制显示面板中LED的驱动电流，进一步提高了显示精度。\n\n[0070]在一个具体的实施例中，像素驱动电路的驱动时序包括五个阶段：在第一阶段，第N行像素的扫描信号保持高电平，第N+1行像素的扫描信号和第N+2行像素的扫描信号分别保持低电平；在第二阶段，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持高电平，第N+2行像素的扫描信号保持低电平；在第三阶段，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持低电平；在第四阶段，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持高电平；在第五阶段，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持低电平。\n\n[0071]具体而言，在第一阶段，当第N行像素的扫描信号SCANn打开，第一节点充入电压Vdata，流过第一薄膜晶体管T1的电流(即流过发光二极管的电流)是ILED＝k(Vdata-VLED-Vth)2，此时第三薄膜晶体管T3和第四薄膜晶体管T4都关断，可将串联的第二电容C2和第三电容C3等效为一个等效电容CA，此时等效电路如图4所示。其中，等效电路上两个电容的电压关系式为：\n\n[0072]U1/UA＝CA/C1\n\n[0073]U1+UA＝Vdata-VS\n\n[0074]根据上述关系式可以得到：\n\n[0075]\n\n[0076]其中，U1为第一电容C1的电压，UA为等效电容CA的电压，C1为第一电容C1的电容，CA为等效电容CA的电容。\n\n[0077]在第二阶段，当扫描至第N+1行时，第N行像素的扫描信号SCANn关闭，第N+1行像素的扫描信号SCANn+1打开，第N+2行像素的扫描信号SCANn+2关闭，第三薄膜晶体管T3导通，等效电路图如图5所示。其中，等效电容CA放电，第一电容C1的电压维持U1不变。\n\n[0078]在第三阶段，第N行像素的扫描信号SCANn关闭，第N+1行像素的扫描信号SCANn+1关闭，第三薄膜晶体管T3关断，电荷再次在等效电容CA和第一电容C1之间平均分配，等效电路图如图6所示。此时电路满足如下关系：\n\n[0079]C1+U1＝Q1\n\n[0080]U′1C1+U\'ACA＝Q1\n\n[0081]U′1C1＝U\'ACA\n\n[0082]根据上述关系式可以得到：\n\n[0083]\n\n[0084]代入可得到：\n\n[0085]\n\n[0086]在第四阶段，当扫描至第N+2行时，第N行像素的扫描信号SCANn关闭，第N+1行像素的扫描信号SCANn+1关闭，第N+2行像素的扫描信号SCANn+2打开，第四薄膜晶体管T4导通，等效电路图如图7所示。其中，将串联的第一电容C1和第二电容C2等效为一个等效电容CB。第三电容C3放电，等效电容CB的电容维持UB\'不变。等效电路上两个电容的电压关系式为：\n\n[0087]UB\'/U3\'＝C3/CB\n\n[0088]\n\n[0089]根据上述关系式可以得到：\n\n[0090]\n\n[0091]其中，U3\'为第三电容C3的电压，UB\'为等效电容CB的电压，C3为第三电容C1的电容，CB为等效电容CB电容。\n\n[0092]在第五阶段，第N行像素的扫描信号SCANn关闭，第N+1行像素的扫描信号SCANn+1关闭，第N行像素的扫描信号SCANn+2关闭，第四薄膜晶体管T4关断，电荷再次在CB和C3之间平均分配，等效电路图如图8所示。此时电路满足如下关系：\n\n[0093]CB+UB\'＝QB\'\n\n[0094]U\'BCB+U′3C3＝QB\'\n\n[0095]U\'BCB＝U3\'C3\n\n[0096]根据上述关系式可以得到：\n\n[0097]\n\n[0098]代入可得到：\n\n[0099]\n\n[0100]进而可得到最终流过发光二极管的电流为：\n\n[0101]\n\n[0102]上述实施例中相较于传统驱动电路的LED电流，需要更大的Vdata才能产生相同的电流。因此可以使用较低分辨率的源极芯片(source IC)进行更精细的电流控制，实现精确控制显示面板中LED的驱动电流，进一步提高了显示精度。满足Micro LED等发光二极管的驱动需求，可以应用于OLED等各种显示面板。\n\n[0103]在一个实施例中，如图9所示，提供了一种像素驱动电路，该像素驱动电路包括第二薄膜晶体管920，第一薄膜晶体管910，第一电容930，第三薄膜晶体管940，第二电容950，第四薄膜晶体管960，第三电容970以及发光二极管980。该像素驱动电路还包括第五薄膜晶体管990；第五薄膜晶体管990的栅极连接控制信号，源极连接第二节点s，漏极用于接入参考电压。\n\n[0104]其中，可通过控制线(Pre-charge)向第五薄膜晶体管的栅极提供控制信号。\n\n[0105]上述实施例的的像素驱动电路改进了传统的3T1C像素电路，能够实现采用较低输出电压分辨率的源极芯片进行精细的电流控制。通过控制第二薄膜晶体管、第三薄膜晶体管、第四薄膜晶体管和第五薄膜晶体管的通断，进行两级电容放电及各个电容(第一电容、第二电容和第三电容)之间电荷分配，实现精确控制显示面板中LED的驱动电流，进一步提高了显示精度。\n\n[0106]在一个具体的实施例中，像素驱动电路的驱动时序包括五个阶段：在第一阶段，控制信号保持高电平，第N行像素的扫描信号保持高电平，第N+1行像素的扫描信号和第N+2行像素的扫描信号分别保持低电平；在第二阶段，控制信号保持低电平，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持高电平，第N+2行像素的扫描信号保持低电平；在第三阶段，控制信号保持低电平，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持低电平；在第四阶段，控制信号保持低电平，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持高电平；在第五阶段，控制信号保持低电平，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持低电平。\n\n[0107]具体而言，在第五阶段，流过发光二极管的电流为：\n\n[0108]\n\n[0109]其中，Vref为接入第五薄膜晶体管的源极的参考电压。\n\n[0110]上述实施例中相较于传统驱动电路的LED电流，需要更大的Vdata才能产生相同的电流。因此可以使用较低分辨率的源极芯片(source IC)进行更精细的电流控制，实现精确控制显示面板中LED的驱动电流，进一步提高了显示精度。\n\n[0111]在一个实施例中，发光二极管为OLED(有机发光二极管)，Micro LED(微型发光二极管)，Mini LED(迷你型发光二极管)或μLED(微型发光二极管)。\n\n[0112]在一个实施例中，如图10所示，提供了一种像素驱动方法，包括以下步骤：\n\n[0113]步骤S110，在第一阶段分别对第一电容、第二电容和第三电容充电。\n\n[0114]步骤S120，在第二阶段保持第一电容的电压值不变，分别对第二电容和第三电容放电。\n\n[0115]步骤S130，在第三阶段对第一电容、第二电容和第三电容之间进行电荷分配。\n\n[0116]步骤S140，在第四阶段保持第一电容和第二电容的电压值不变，对第三电容放电。\n\n[0117]步骤S150，在第五阶段对第一电容、第二电容和第三电容之间进行电荷分配。\n\n[0118]步骤S160，在第六阶段控制发光二极管进行发光。\n\n[0119]其中，一帧的显示周期被顺序地划分为第一阶段、第二阶段、第三阶段、第四阶段、第五阶段和第六阶段。\n\n[0120]在一个具体的实施例中，在第一阶段分别对第一电容、第二电容和第三电容充电的步骤包括：\n\n[0121]在第一阶段，控制第N行像素的扫描信号保持高电平，第N+1行像素的扫描信号和第N+2行像素的扫描信号分别保持低电平；\n\n[0122]在第二阶段保持第一电容的电压值不变，分别对第二电容和第三电容放电的步骤包括：\n\n[0123]在第二阶段，控制第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持高电平，第N+2行像素的扫描信号保持低电平；\n\n[0124]在第三阶段对第一电容、第二电容和第三电容之间进行电荷分配的步骤包括：\n\n[0125]在第三阶段，控制第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持低电平；\n\n[0126]在第四阶段保持第一电容和第二电容的电压值不变，对第三电容放电的步骤包括：\n\n[0127]在第四阶段，控制第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持高电平；\n\n[0128]在第五阶段对第一电容、第二电容和第三电容之间进行电荷分配的步骤包括：\n\n[0129]在第六阶段，控制第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持低电平。\n\n[0130]上述实施例中，通过控制第二薄膜晶体管、第三薄膜晶体管和第四薄膜晶体管的通断，进行两级电容放电及各个电容(第一电容、第二电容和第三电容)之间电荷分配，实现精确控制显示面板中LED的驱动电流，进一步提高了显示精度。\n\n[0131]应该理解的是，虽然图10的流程图中的各个步骤按照箭头的指示依次显示，但是这些步骤并不是必然按照箭头指示的顺序依次执行。除非本文中有明确的说明，这些步骤的执行并没有严格的顺序限制，这些步骤可以以其它的顺序执行。而且，图10中的至少一部分步骤可以包括多个子步骤或者多个阶段，这些子步骤或者阶段并不必然是在同一时刻执行完成，而是可以在不同的时刻执行，这些子步骤或者阶段的执行顺序也不必然是依次进行，而是可以与其它步骤或者其它步骤的子步骤或者阶段的至少一部分轮流或者交替地执行。\n\n[0132]另一方面，还提供了一种显示面板，该显示面板包括如上述任一项的像素驱动电路。\n\n[0133]关于显示面板的具体限定可以参见上文中对于像素驱动电路的限定，在此不再赘述。\n\n[0134]需要说明的是，本申请特别适用于微型发光二极管显示面板，但不限于此，可以应用于各种电流驱动显示面板，如有机发光二极管显示面板，迷你发光二极管(Mini LED)显示面板，可提升驱动电流控制精度。\n\n[0135]在一个实施例中，还提供了一种显示装置，该显示装置包括如上述的显示面板。\n\n[0136]在一个实施例中，显示面板为OLED显示面板，Micro LED显示面板，Mini LED显示面板或μLED显示面板。\n\n[0137]关于显示装置的具体限定可以参见上文中对于像素驱动电路及显示面板的限定，在此不再赘述。\n\n[0138]本领域普通技术人员可以理解实现上述实施例方法中的全部或部分流程，是可以通过计算机程序来指令相关的硬件来完成，所述的计算机程序可存储于一非易失性计算机可读取存储介质中，该计算机程序在执行时，可包括如上述各除法运算方法的实施例的流程。其中，本申请所提供的各实施例中所使用的对存储器、存储、数据库或其它介质的任何引用，均可包括非易失性和/或易失性存储器。非易失性存储器可包括只读存储器(ROM)、可编程ROM(PROM)、电可编程ROM(EPROM)、电可擦除可编程ROM(EEPROM)或闪存。易失性存储器可包括随机存取存储器(RAM)或者外部高速缓冲存储器。作为说明而非局限，RAM以多种形式可得，诸如静态RAM(SRAM)、动态RAM(DRAM)、同步DRAM(SDRAM)、双数据率SDRAM(DDRSDRAM)、增强型SDRAM(ESDRAM)、同步链路(Synchlink)DRAM(SLDRAM)、存储器总线(Rambus)直接RAM(RDRAM)、直接存储器总线动态RAM(DRDRAM)、以及存储器总线动态RAM(RDRAM)等。\n\n[0139]以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。\n\n[0140]以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。', '技术领域\n\n[0001]本申请涉及显示技术领域，更具体地说，涉及一种像素驱动电路、驱动方法及其显示面板、显示装置。\n\n背景技术\n\n[0002]随着显示设备的发展，对于显示设备的驱动电路成为了重要的研究热点。对于电流型驱动的显示设备，其发光亮度取决于流过Driving TFT(驱动型薄膜晶体管)的栅源电流。例如，采用传统驱动电路应用于Micro LED显示面板，LED的亮度-电流曲线斜率很大，微弱的电流变化就会引起人眼可察觉的亮度改变。因此Micro LED面板如果采用传统驱动电路，难以精确控制LED的驱动电流，显示精度低。\n\n[0003]在实现过程中，发明人发现传统技术中至少存在如下问题：采用传统驱动电路，难以精确控制显示面板中LED的驱动电流，显示精度低。\n\n发明内容\n\n[0004]基于此，有必要针对传统的采用传统驱动电路，难以精确控制显示面板中LED的驱动电流，显示精度低的问题，提供一种像素驱动电路、驱动方法及其显示面板、显示装置。\n\n[0005]为了实现上述目的，本发明实施例提供了一种像素驱动电路，包括：\n\n[0006]第一薄膜晶体管，第一薄膜晶体管的栅极连接第一节点，源极连接第二节点，漏极用于接入电源高电压；\n\n[0007]第二薄膜晶体管，第二薄膜晶体管的栅极用于接入第N行像素的扫描信号，源极连接第一节点，漏极用于接入数据信号；\n\n[0008]第一电容，第一电容的一端连接第一节点，另一端连接第三节点；\n\n[0009]第三薄膜晶体管，第三薄膜晶体管的栅极用于接入第N+1行像素的扫描信号，源极连接第三节点，漏极连接第二节点；\n\n[0010]第二电容，第二电容的一端连接第三节点，另一端连接第四节点；\n\n[0011]第四薄膜晶体管，第四薄膜晶体管的栅极用于接入第N+2行像素的扫描信号，源极连接第四节点，漏极连接第二节点；\n\n[0012]第三电容，第三电容的一端连接第四节点，另一端连接第二节点；\n\n[0013]发光二极管，发光二极管的阳极连接第二节点，阴极用于接入电源低电压。\n\n[0014]在其中一个实施例中，像素驱动电路的驱动时序包括五个阶段：在第一阶段，第N行像素的扫描信号保持高电平，第N+1行像素的扫描信号和第N+2行像素的扫描信号分别保持低电平；在第二阶段，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持高电平，第N+2行像素的扫描信号保持低电平；在第三阶段，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持低电平；在第四阶段，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持高电平；在第五阶段，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持低电平。\n\n[0015]在其中一个实施例中，还包括第五薄膜晶体管；\n\n[0016]第五薄膜晶体管的栅极连接控制信号，源极连接第二节点，漏极用于接入参考电压。\n\n[0017]在其中一个实施例中，像素驱动电路的驱动时序包括五个阶段：在第一阶段，控制信号保持高电平，第N行像素的扫描信号保持高电平，第N+1行像素的扫描信号和第N+2行像素的扫描信号分别保持低电平；在第二阶段，控制信号保持低电平，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持高电平，第N+2行像素的扫描信号保持低电平；在第三阶段，控制信号保持低电平，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持低电平；在第四阶段，控制信号保持低电平，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持高电平；在第五阶段，控制信号保持低电平，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持低电平。\n\n[0018]在其中一个实施例中，发光二极管为OLED，Micro LED，Mini LED或μLED。\n\n[0019]另一方面，本发明实施例还提供了一种应用于上述的像素驱动电路的像素驱动方法，包括以下步骤：\n\n[0020]在第一阶段分别对第一电容、第二电容和第三电容充电；\n\n[0021]在第二阶段保持第一电容的电压值不变，分别对第二电容和第三电容放电；\n\n[0022]在第三阶段对第一电容、第二电容和第三电容之间进行电荷分配；\n\n[0023]在第四阶段保持第一电容和第二电容的电压值不变，对第三电容放电；\n\n[0024]在第五阶段对第一电容、第二电容和第三电容之间进行电荷分配；\n\n[0025]在第六阶段控制发光二极管进行发光；\n\n[0026]其中，一帧的显示周期被顺序地划分为第一阶段、第二阶段、第三阶段、第四阶段、第五阶段和第六阶段。\n\n[0027]在其中一个实施例中，在第一阶段分别对第一电容、第二电容和第三电容充电的步骤包括：\n\n[0028]在第一阶段，控制第N行像素的扫描信号保持高电平，第N+1行像素的扫描信号和第N+2行像素的扫描信号分别保持低电平；\n\n[0029]在第二阶段保持第一电容的电压值不变，分别对第二电容和第三电容放电的步骤包括：\n\n[0030]在第二阶段，控制第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持高电平，第N+2行像素的扫描信号保持低电平；\n\n[0031]在第三阶段对第一电容、第二电容和第三电容之间进行电荷分配的步骤包括：\n\n[0032]在第三阶段，控制第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持低电平；\n\n[0033]在第四阶段保持第一电容和第二电容的电压值不变，对第三电容放电的步骤包括：\n\n[0034]在第四阶段，控制第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持高电平；\n\n[0035]在第五阶段对第一电容、第二电容和第三电容之间进行电荷分配的步骤包括：\n\n[0036]在第六阶段，控制第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持低电平。\n\n[0037]另一方面，本发明实施例还提供了一种显示面板，包括如上述任一项的像素驱动电路。\n\n[0038]另一方面，本发明实施例还提供了一种显示装置，包括如上述的显示面板。\n\n[0039]在其中一个实施例中，显示面板为OLED显示面板，Micro LED显示面板，Mini LED显示面板或μLED显示面板。\n\n[0040]上述技术方案中的一个技术方案具有如下优点和有益效果：\n\n[0041]上述的像素驱动电路的各实施例中，基于第一薄膜晶体管的栅极连接第一节点，源极连接第二节点，漏极用于接入电源高电压；第二薄膜晶体管的栅极用于接入第N行像素的扫描信号，源极连接第一节点，漏极用于接入数据信号；第一电容的一端连接第一节点，另一端连接第三节点；第三薄膜晶体管的栅极用于接入第N+1行像素的扫描信号，源极连接第三节点，漏极连接第二节点；第二电容的一端连接第三节点，另一端连接第四节点；第四薄膜晶体管的栅极用于接入第N+2行像素的扫描信号，源极连接第三四节点，漏极连接第二节点；第三电容的一端连接第四节点，另一端连接第二节点；发光二极管的阳极连接第二节点，阴极用于接入电源低电压，进而能够实现采用较低输出电压分辨率的源极芯片进行精细的电流控制。本申请能够通过控制第二薄膜晶体管、第三薄膜晶体管和第四薄膜晶体管的通断，进行两级电容放电及各个电容(第一电容、第二电容和第三电容)之间电荷分配，实现精确控制显示面板中LED的驱动电流，进一步提高了显示精度。\n\n附图说明\n\n[0042]下面将结合附图及实施例对本申请作进一步说明，附图中：\n\n[0043]图1为传统2T1C像素驱动电路的示意图；\n\n[0044]图2为一个实施例中LED的亮度-电流曲线示意图；\n\n[0045]图3为一个实施例中像素驱动电路的第一结构示意图；\n\n[0046]图4为一个实施例中像素驱动电路第一阶段的等效电路示意图；\n\n[0047]图5为一个实施例中像素驱动电路第二阶段的等效电路示意图；\n\n[0048]图6为一个实施例中像素驱动电路第三阶段的等效电路示意图；\n\n[0049]图7为一个实施例中像素驱动电路第四阶段的等效电路示意图；\n\n[0050]图8为一个实施例中像素驱动电路第五阶段的等效电路示意图；\n\n[0051]图9为一个实施例中像素驱动电路的第二结构示意图；\n\n[0052]图10为一个实施例中像素驱动方法的流程示意图。\n\n具体实施方式\n\n[0053]为了对本申请的技术特征、目的和效果有更加清楚的理解，现对照附图详细说明本申请的具体实施方式。\n\n[0054]传统的像素驱动电路如图1所示，其为一种常见的微发光二极管或者有机发光二极管的驱动像素电路示意图。此2T1C像素电路主要包括作为驱动薄膜晶体管(TFT)的薄膜晶体管T1，作为开关薄膜晶体管的薄膜晶体管T2，存储电容C以及发光二极管LED，发光二极管LED可以是微发光二极管或者有机发光二极管，薄膜晶体管T2由相应行像素的扫描信号SCAN控制开关与否，以控制是否输入相应的数据信号Vdata。采用此像素电路，在发光阶段，流过LED的电流ILED由薄膜晶体管T1控制，可以表示为ILED＝k(Vdata-VLED-Vth)2，其中，k为与工艺和设计相关的参数，Vdata为源极芯片(Source IC)输出的数据信号的电压，VLED为LED上的电压，Vth为薄膜晶体管T1的阈值电压。\n\n[0055]如图2所示，其为LED的亮度-电流曲线示意图，对于微发光二极管显示面板来说，LED的亮度-电流曲线斜率很大，微弱的电流变化就会引起人眼可察觉的亮度改变。因此微发光二极管显示面板如果采用传统驱动电路，例如图1所示电路，必须非常精确控制LED的驱动电流，难度较大。因为源极芯片输出电压的分辨率有限，难以精确控制LED电流，使其产生足够多的灰阶。\n\n[0056]而本申请提出的一种像素驱动电路，改进了原有的像素驱动电路，改进后的像素驱动电路在原有像素驱动电路基础上增加两个电容以及两个薄膜晶体管，增加的两个电容与原有的像素电路中的存储电容串联，增加的两个薄膜晶体管分别连接于相邻两个电容之间的公共点以及驱动薄膜晶体管(N型)的源极，能够实现采用较低输出电压分辨率的源极芯片进行精细的电流控制，极大的提高显示效率。\n\n[0057]在一个实施例中，如图3所示，提供了一种像素驱动电路，包括：\n\n[0058]第一薄膜晶体管310，第一薄膜晶体管310的栅极连接第一节点G，源极连接第二节点S，漏极用于接入电源高电压；\n\n[0059]第二薄膜晶体管320，第二薄膜晶体管320的栅极用于接入第N行像素的扫描信号，源极连接第一节点G，漏极用于接入数据信号；\n\n[0060]第一电容330，第一电容330的一端连接第一节点G，另一端连接第三节点A；\n\n[0061]第三薄膜晶体管340，第三薄膜晶体管340的栅极用于接入第N+1行像素的扫描信号，源极连接第三节点A，漏极连接第二节点S；\n\n[0062]第二电容350，第二电容350的一端连接第三节点A，另一端连接第四节点B；\n\n[0063]第四薄膜晶体管360，第四薄膜晶体管360的栅极用于接入第N+2行像素的扫描信号，源极连接第四节点B，漏极连接第二节点S；\n\n[0064]第三电容370，第三电容370的一端连接第四节点B，另一端连接第二节点S；\n\n[0065]发光二极管380，发光二极管380的阳极连接第二节点S，阴极用于接入电源低电压。\n\n[0066]其中，第一节点G指的是第一薄膜晶体管310、第二薄膜晶体管320和第一电容330之间的共用连接点。第二节点S指的是第一薄膜晶体管310、第三薄膜晶体管340、第四薄膜晶体管360、第三电容370和发光二极管380之间的共用连接点。第三节点A指的是第一电容330、第二电容350和第三薄膜晶体管340之间的共用连接点。第四节点B指的是第二电容350、第三电容370和第四薄膜晶体管360之间的共用连接点。\n\n[0067]具体地，可通过第N行像素的扫描控制线向第二薄膜晶体管320的栅极提供第N行像素的扫描信号。可通过第N+1行像素的扫描控制线向第三薄膜晶体管340的栅极提供第N+1行像素的扫描信号。可通过第N+2行像素的扫描控制线向第四薄膜晶体管360的栅极提供第N+2行像素的扫描信号。可通过数据控制线向第二薄膜晶体管320的源极提供数据信号。\n\n[0068]需要说明的是，N为大于或等于1的正整数。\n\n[0069]上述的像素驱动电路的实施例中，基于第一薄膜晶体管310的栅极连接第一节点G，源极连接第二节点S，漏极用于接入电源高电压；第二薄膜晶体管320的栅极用于接入第N行像素的扫描信号，源极连接第一节点G，漏极用于接入数据信号；第一电容330的一端连接第一节点G，另一端连接第三节点A；第三薄膜晶体管340的栅极用于接入第N+1行像素的扫描信号，源极连接第三节点A，漏极连接第二节点S；第二电容350的一端连接第三节点A，另一端连接第四节点B；第四薄膜晶体管360的栅极用于接入第N+2行像素的扫描信号，源极连接第四节点B，漏极连接第二节点S；第三电容370的一端连接第四节点B，另一端连接第二节点S；发光二极管380的阳极连接第二节点S，阴极用于接入电源低电压，进而能够实现采用较低输出电压分辨率的源极芯片进行精细的电流控制。通过控制第二薄膜晶体管320、第三薄膜晶体管340和第四薄膜晶体管360的通断，进行两级电容放电及各个电容(第一电容330、第二电容350和第三电容370)之间电荷分配，实现精确控制显示面板中LED的驱动电流，进一步提高了显示精度。\n\n[0070]在一个具体的实施例中，像素驱动电路的驱动时序包括五个阶段：在第一阶段，第N行像素的扫描信号保持高电平，第N+1行像素的扫描信号和第N+2行像素的扫描信号分别保持低电平；在第二阶段，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持高电平，第N+2行像素的扫描信号保持低电平；在第三阶段，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持低电平；在第四阶段，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持高电平；在第五阶段，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持低电平。\n\n[0071]具体而言，在第一阶段，当第N行像素的扫描信号SCANn打开，第一节点充入电压Vdata，流过第一薄膜晶体管T1的电流(即流过发光二极管的电流)是ILED＝k(Vdata-VLED-Vth)2，此时第三薄膜晶体管T3和第四薄膜晶体管T4都关断，可将串联的第二电容C2和第三电容C3等效为一个等效电容CA，此时等效电路如图4所示。其中，等效电路上两个电容的电压关系式为：\n\n[0072]U1/UA＝CA/C1\n\n[0073]U1+UA＝Vdata-VS\n\n[0074]根据上述关系式可以得到：\n\n[0075]\n\n[0076]其中，U1为第一电容C1的电压，UA为等效电容CA的电压，C1为第一电容C1的电容，CA为等效电容CA的电容。\n\n[0077]在第二阶段，当扫描至第N+1行时，第N行像素的扫描信号SCANn关闭，第N+1行像素的扫描信号SCANn+1打开，第N+2行像素的扫描信号SCANn+2关闭，第三薄膜晶体管T3导通，等效电路图如图5所示。其中，等效电容CA放电，第一电容C1的电压维持U1不变。\n\n[0078]在第三阶段，第N行像素的扫描信号SCANn关闭，第N+1行像素的扫描信号SCANn+1关闭，第三薄膜晶体管T3关断，电荷再次在等效电容CA和第一电容C1之间平均分配，等效电路图如图6所示。此时电路满足如下关系：\n\n[0079]C1+U1＝Q1\n\n[0080]U′1C1+U\'ACA＝Q1\n\n[0081]U′1C1＝U\'ACA\n\n[0082]根据上述关系式可以得到：\n\n[0083]\n\n[0084]代入可得到：\n\n[0085]\n\n[0086]在第四阶段，当扫描至第N+2行时，第N行像素的扫描信号SCANn关闭，第N+1行像素的扫描信号SCANn+1关闭，第N+2行像素的扫描信号SCANn+2打开，第四薄膜晶体管T4导通，等效电路图如图7所示。其中，将串联的第一电容C1和第二电容C2等效为一个等效电容CB。第三电容C3放电，等效电容CB的电容维持UB\'不变。等效电路上两个电容的电压关系式为：\n\n[0087]UB\'/U3\'＝C3/CB\n\n[0088]\n\n[0089]根据上述关系式可以得到：\n\n[0090]\n\n[0091]其中，U3\'为第三电容C3的电压，UB\'为等效电容CB的电压，C3为第三电容C1的电容，CB为等效电容CB电容。\n\n[0092]在第五阶段，第N行像素的扫描信号SCANn关闭，第N+1行像素的扫描信号SCANn+1关闭，第N行像素的扫描信号SCANn+2关闭，第四薄膜晶体管T4关断，电荷再次在CB和C3之间平均分配，等效电路图如图8所示。此时电路满足如下关系：\n\n[0093]CB+UB\'＝QB\'\n\n[0094]U\'BCB+U′3C3＝QB\'\n\n[0095]U\'BCB＝U3\'C3\n\n[0096]根据上述关系式可以得到：\n\n[0097]\n\n[0098]代入可得到：\n\n[0099]\n\n[0100]进而可得到最终流过发光二极管的电流为：\n\n[0101]\n\n[0102]上述实施例中相较于传统驱动电路的LED电流，需要更大的Vdata才能产生相同的电流。因此可以使用较低分辨率的源极芯片(source IC)进行更精细的电流控制，实现精确控制显示面板中LED的驱动电流，进一步提高了显示精度。满足Micro LED等发光二极管的驱动需求，可以应用于OLED等各种显示面板。\n\n[0103]在一个实施例中，如图9所示，提供了一种像素驱动电路，该像素驱动电路包括第二薄膜晶体管920，第一薄膜晶体管910，第一电容930，第三薄膜晶体管940，第二电容950，第四薄膜晶体管960，第三电容970以及发光二极管980。该像素驱动电路还包括第五薄膜晶体管990；第五薄膜晶体管990的栅极连接控制信号，源极连接第二节点s，漏极用于接入参考电压。\n\n[0104]其中，可通过控制线(Pre-charge)向第五薄膜晶体管的栅极提供控制信号。\n\n[0105]上述实施例的的像素驱动电路改进了传统的3T1C像素电路，能够实现采用较低输出电压分辨率的源极芯片进行精细的电流控制。通过控制第二薄膜晶体管、第三薄膜晶体管、第四薄膜晶体管和第五薄膜晶体管的通断，进行两级电容放电及各个电容(第一电容、第二电容和第三电容)之间电荷分配，实现精确控制显示面板中LED的驱动电流，进一步提高了显示精度。\n\n[0106]在一个具体的实施例中，像素驱动电路的驱动时序包括五个阶段：在第一阶段，控制信号保持高电平，第N行像素的扫描信号保持高电平，第N+1行像素的扫描信号和第N+2行像素的扫描信号分别保持低电平；在第二阶段，控制信号保持低电平，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持高电平，第N+2行像素的扫描信号保持低电平；在第三阶段，控制信号保持低电平，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持低电平；在第四阶段，控制信号保持低电平，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持高电平；在第五阶段，控制信号保持低电平，第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持低电平。\n\n[0107]具体而言，在第五阶段，流过发光二极管的电流为：\n\n[0108]\n\n[0109]其中，Vref为接入第五薄膜晶体管的源极的参考电压。\n\n[0110]上述实施例中相较于传统驱动电路的LED电流，需要更大的Vdata才能产生相同的电流。因此可以使用较低分辨率的源极芯片(source IC)进行更精细的电流控制，实现精确控制显示面板中LED的驱动电流，进一步提高了显示精度。\n\n[0111]在一个实施例中，发光二极管为OLED(有机发光二极管)，Micro LED(微型发光二极管)，Mini LED(迷你型发光二极管)或μLED(微型发光二极管)。\n\n[0112]在一个实施例中，如图10所示，提供了一种像素驱动方法，包括以下步骤：\n\n[0113]步骤S110，在第一阶段分别对第一电容、第二电容和第三电容充电。\n\n[0114]步骤S120，在第二阶段保持第一电容的电压值不变，分别对第二电容和第三电容放电。\n\n[0115]步骤S130，在第三阶段对第一电容、第二电容和第三电容之间进行电荷分配。\n\n[0116]步骤S140，在第四阶段保持第一电容和第二电容的电压值不变，对第三电容放电。\n\n[0117]步骤S150，在第五阶段对第一电容、第二电容和第三电容之间进行电荷分配。\n\n[0118]步骤S160，在第六阶段控制发光二极管进行发光。\n\n[0119]其中，一帧的显示周期被顺序地划分为第一阶段、第二阶段、第三阶段、第四阶段、第五阶段和第六阶段。\n\n[0120]在一个具体的实施例中，在第一阶段分别对第一电容、第二电容和第三电容充电的步骤包括：\n\n[0121]在第一阶段，控制第N行像素的扫描信号保持高电平，第N+1行像素的扫描信号和第N+2行像素的扫描信号分别保持低电平；\n\n[0122]在第二阶段保持第一电容的电压值不变，分别对第二电容和第三电容放电的步骤包括：\n\n[0123]在第二阶段，控制第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持高电平，第N+2行像素的扫描信号保持低电平；\n\n[0124]在第三阶段对第一电容、第二电容和第三电容之间进行电荷分配的步骤包括：\n\n[0125]在第三阶段，控制第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持低电平；\n\n[0126]在第四阶段保持第一电容和第二电容的电压值不变，对第三电容放电的步骤包括：\n\n[0127]在第四阶段，控制第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持高电平；\n\n[0128]在第五阶段对第一电容、第二电容和第三电容之间进行电荷分配的步骤包括：\n\n[0129]在第六阶段，控制第N行像素的扫描信号保持低电平，第N+1行像素的扫描信号保持低电平，第N+2行像素的扫描信号保持低电平。\n\n[0130]上述实施例中，通过控制第二薄膜晶体管、第三薄膜晶体管和第四薄膜晶体管的通断，进行两级电容放电及各个电容(第一电容、第二电容和第三电容)之间电荷分配，实现精确控制显示面板中LED的驱动电流，进一步提高了显示精度。\n\n[0131]应该理解的是，虽然图10的流程图中的各个步骤按照箭头的指示依次显示，但是这些步骤并不是必然按照箭头指示的顺序依次执行。除非本文中有明确的说明，这些步骤的执行并没有严格的顺序限制，这些步骤可以以其它的顺序执行。而且，图10中的至少一部分步骤可以包括多个子步骤或者多个阶段，这些子步骤或者阶段并不必然是在同一时刻执行完成，而是可以在不同的时刻执行，这些子步骤或者阶段的执行顺序也不必然是依次进行，而是可以与其它步骤或者其它步骤的子步骤或者阶段的至少一部分轮流或者交替地执行。\n\n[0132]另一方面，还提供了一种显示面板，该显示面板包括如上述任一项的像素驱动电路。\n\n[0133]关于显示面板的具体限定可以参见上文中对于像素驱动电路的限定，在此不再赘述。\n\n[0134]需要说明的是，本申请特别适用于微型发光二极管显示面板，但不限于此，可以应用于各种电流驱动显示面板，如有机发光二极管显示面板，迷你发光二极管(Mini LED)显示面板，可提升驱动电流控制精度。\n\n[0135]在一个实施例中，还提供了一种显示装置，该显示装置包括如上述的显示面板。\n\n[0136]在一个实施例中，显示面板为OLED显示面板，Micro LED显示面板，Mini LED显示面板或μLED显示面板。\n\n[0137]关于显示装置的具体限定可以参见上文中对于像素驱动电路及显示面板的限定，在此不再赘述。\n\n[0138]本领域普通技术人员可以理解实现上述实施例方法中的全部或部分流程，是可以通过计算机程序来指令相关的硬件来完成，所述的计算机程序可存储于一非易失性计算机可读取存储介质中，该计算机程序在执行时，可包括如上述各除法运算方法的实施例的流程。其中，本申请所提供的各实施例中所使用的对存储器、存储、数据库或其它介质的任何引用，均可包括非易失性和/或易失性存储器。非易失性存储器可包括只读存储器(ROM)、可编程ROM(PROM)、电可编程ROM(EPROM)、电可擦除可编程ROM(EEPROM)或闪存。易失性存储器可包括随机存取存储器(RAM)或者外部高速缓冲存储器。作为说明而非局限，RAM以多种形式可得，诸如静态RAM(SRAM)、动态RAM(DRAM)、同步DRAM(SDRAM)、双数据率SDRAM(DDRSDRAM)、增强型SDRAM(ESDRAM)、同步链路(Synchlink)DRAM(SLDRAM)、存储器总线(Rambus)直接RAM(RDRAM)、直接存储器总线动态RAM(DRDRAM)、以及存储器总线动态RAM(RDRAM)等。\n\n[0139]以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。\n\n[0140]以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10733, 23787, '技术领域\n\n[0001]本申请涉及显示领域，特别是涉及一种micro-LED显示器件的制作方法。\n\n背景技术\n\n[0002]Micro-LED发展成未来显示技术的热点之一，和目前的LCD、OLED显示器件相比，具有反应快、高色域、高像素、低能耗等优势，但其技术难点多且复杂，特别是其关键技术：巨量转移技术。\n\n[0003]Micro-LED芯片在制作完成后需要逐一转移到所需位置，需要转移的LED芯片的数量大缺转移后的位置精度要求高，需要耗费大量的资源。随着现有技术的不断发展，巨量转移技术发展至今已经出了不少技术分支，如静电吸附、镭射激光烧触等。\n\n[0004]传统的巨量转移微型LED的方法是通过基板接合(Wafer Bonding)将微型元件自转移基板转移至接收基板。转移方法的其中一种实施方法为直接转移，也就是直接将微型元件阵列自转移基板接合至接收基板，之后再将转移基板移除；另一种实施方法为“间接转移”。此方法包含两次接合/剥离的步骤。在间接转移中，转置头可将位于中间承载基板上的部分微型元件阵列拾起，然后再将微型元件阵列接合至接收基板，接着再把转置头移除。但现有技术中的直接转移或间接转移的巨量转移技术，工艺复杂且成本较高。\n\n[0005]因此，现有的micro-LED显示器件的技术中，还存在着micro-LED的制作过程中需要采用巨量直接转移或是巨量间接转移的技术，但这两种技术的工艺都比较复杂且成本高的问题，急需改进。\n\n发明内容\n\n[0006]本申请涉及一种micro-LED显示器件的制作方法，用于解决现有技术中存在着micro-LED的制作过程中需要采用巨量直接转移或是巨量间接转移的技术，但这两种技术的工艺都比较复杂且成本高的问题。\n\n[0007]为解决上述问题，本申请提供的技术方案如下：\n\n[0008]本申请提供的一种micro-LED显示器件的制作方法，包括以下步骤：\n\n[0009]S10，提供一衬底基板，并在所述衬底基板上沉积LED单晶膜层；\n\n[0010]S20，提供一显示背板，在所述显示背板上制作驱动线路，并在所述驱动线路背离所述显示背板的一侧设置触点；\n\n[0011]S30，在所述显示背板的所述驱动线路上方覆盖一层介电层，并在正对所述触点沿所述介电层设置通孔；\n\n[0012]S40，在所述触点上方沿所述通孔处形成熔融金属点；\n\n[0013]S50，将沉积有所述LED单晶膜层的所述衬底基板与所述显示背板进行对位，使得所述LED单晶膜层一侧正对于设置有金属点的所述介电层一侧；\n\n[0014]S60，分别向所述衬底基板背离所述LED单晶膜层一侧、所述显示背板背离所述介电层一侧施压，使得所述LED单晶膜层与所述介电层完全贴合，绑定在一起；\n\n[0015]S70，将所述衬底基板从所述LED单晶膜层与所述显示背板形成的整体上剥离下来；\n\n[0016]S80，对所述LED单晶膜层背离所述显示背板的一侧进行黄光和刻蚀制程，形成mirco-LED阵列；\n\n[0017]S90，再在所述介电层背离所述显示背板的一侧填充保护层和透明电极层，以形成完整的mirco-LED显示器件。\n\n[0018]根据本申请提供的一优选实施例，步骤“S10”中所述LED单晶膜层采用金属有机化合物化学气象沉积的方式制得。\n\n[0019]根据本申请提供的一优选实施例，步骤“S10”中所述衬底基板为蓝宝石衬底基板、碳化硅衬底基板或是硅衬底基板。\n\n[0020]根据本申请提供的一优选实施例，所述介电层采用氧化硅、氮化硅或是绝缘有机材料。\n\n[0021]根据本申请提供的一优选实施例，所述介电层的高度大于所述驱动线路与所述触点的高度之和；所述通孔的的宽度小于所述驱动线路的宽度，大于所述触点的宽度。\n\n[0022]根据本申请提供的一优选实施例，所述熔融金属点采用金属锡制成。\n\n[0023]根据本申请提供的一优选实施例，步骤“S60”中绑定设置有所述LED单晶膜层的所述衬底基板与设置有所述介电层的所述显示背板时，所述LED单晶膜层和所述介电层之间采用低熔点金属材料进行绑定。\n\n[0024]根据本申请提供的一优选实施例，所述低熔点的金属材料为:锡、铟、铅或是铋。\n\n[0025]根据本申请提供的一优选实施例，所述LED单晶膜层和所述介电层之间的绑定采用低温焊接技术。\n\n[0026]根据本申请提供的一优选实施例，采用激光镭射的方法剥离所述衬底基板。\n\n[0027]与现有技术相比，本申请提供的micro-LED显示器件的制作方法的有益效果为：本申请提供的micro-LED显示器件的制作方法，可以自对准进行LED转移绑定，避免了常规的巨量转移制程，工艺简单，降低了生产成本，大大地提高了产品良率以及micro-LED显示器件的像素。\n\n附图说明\n\n[0028]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0029]图1为本申请实施例提供的micro-LED显示器件的制作方法的流程示意图。\n\n[0030]图2为本申请实施例提供的micro-LED显示器件制作工艺的第一结构示意图。\n\n[0031]图3为本申请实施例提供的micro-LED显示器件制作工艺的第二结构示意图。\n\n[0032]图4为本申请实施例提供的micro-LED显示器件制作工艺的第三结构示意图。\n\n[0033]图5为本申请实施例提供的micro-LED显示器件制作工艺的第四结构示意图。\n\n[0034]图6为本申请实施例提供的micro-LED显示器件制作工艺的第五结构示意图。\n\n[0035]图7为本申请实施例提供的micro-LED显示器件制作工艺的第六结构示意图。\n\n[0036]图8为本申请实施例提供的micro-LED显示器件制作工艺的第七结构示意图。\n\n[0037]图9为本申请实施例提供的micro-LED显示器件制作工艺的第八结构示意图。\n\n[0038]图10为本申请实施例提供的micro-LED显示器件制作工艺的第九结构示意图。\n\n具体实施方式\n\n[0039]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0040]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0041]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0042]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0043]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0044]本申请提供一种micro-LED显示器件的制作方法，具体参阅图1-图10。\n\n[0045]参阅图1，为本申请实施例提供的一种micro-LED显示器件的制作方法的流程示意图。该方法包括如下步骤：S10，提供一衬底基板，并在所述衬底基板上沉积LED单晶膜层；S20，提供一显示背板，在所述显示背板上制作驱动线路并在所述驱动线路背离所述显示背板的一侧设置触点；S30，在所述显示背板的所述驱动线路上方覆盖一层介电层，并在正对所述触点沿所述介电层设置通孔；S40，在所述触点上方沿所述通孔处形成所述熔融金属点；S50，将沉积有所述LED单晶膜层的所述衬底基板与所述显示背板进行对位，使得所述LED单晶膜层一侧正对于设置有金属点的所述介电层一侧；S60，分别向所述衬底基板背离所述LED单晶膜层一侧、所述显示背板背离所述介电层一侧施压，使得所述LED单晶膜层与所述介电层完全贴合，绑定在一起；S70，将所述衬底基板从所述LED单晶膜层与所述显示背板形成的整体上剥离下来；S80，对所述LED单晶膜层背离所述显示背板的一侧进行黄光和刻蚀制程，形成micro-LED阵列；S90，再在所述介电层背离所述显示背板的一侧填充保护层和透明电极层，以形完整的micro-LED显示器件。\n\n[0046]其中，步骤“S10”中所述LED单晶膜层采用金属有机化合物化学气象沉积在大于1000℃的温度下制得。所述衬底基板为蓝宝石衬底基板、碳化硅衬底基板或是硅衬底基板。步骤“S30”中所述介电层采用氧化硅、氮化硅或是绝缘有机材料。步骤“S40”中所述熔融金属点采用金属锡制成。\n\n[0047]参阅图2-10，分别为本申请实施例提供的micro-LED显示器件制作工艺的第一至第九结构示意图。包括：衬底基板1和LED单晶膜层2，所述LED单晶膜层2沉积在所述衬底基板1上。\n\n[0048]附图3中包括：显示背板3，驱动线路4以及设置在所述驱动线路4背离所述显示背板3一侧的触点5。\n\n[0049]附图4中除了所述显示背板3，所述驱动线路4和所述触点5外，继续在所述显示背板3设置所述驱动线路4一侧沉积介电层6，所述介电层6的高度大于所述驱动线路4与所述触点5的高度之和。并在所述驱动线路4和所述触点5正上方设置通孔7，所述通孔7的宽度小于所述驱动线路4的宽度，大于所述触点5的宽度。\n\n[0050]附图5中，继续在所述显示背板3设置所述介电层6的一侧，所述通孔7处形成熔融金属点8，使得所述通孔7被完全填充。\n\n[0051]附图6中，将沉积有所述LED单晶膜层2的所述衬底基板1与所述显示背板3进行对位，使得所述LED单晶膜层2一侧正对于设置有所述熔融金属点8的所述介电层6一侧。\n\n[0052]附图7中，分别向所述衬底基板1背离所述LED单晶膜层2一侧，所述显示背板3背离所述介电层6一侧施压，使得所述LED单晶膜层2与所述介电层6完全贴合，绑定在一起。采用低熔点的金属材料：锡、铟、铅或是铋，但不限于这几种低熔点金属材料，对所述LED单晶膜层2和所述介电层6之间进行绑定，绑定采用低温焊接技术进行。\n\n[0053]附图8中，采用激光镭射的方法将所述衬底基板1从所述LED单晶膜层2与所述显示背板3形成的整体剥离下来。\n\n[0054]附图9中，对所述LED单晶膜层2背离所述显示背板3的一侧进行黄光和刻蚀制程，形成micro-LED阵列9。\n\n[0055]附图10中，继续在所述介电层6背离所述显示背板3的一侧填充保护层10和透明电极层11，以形成完整的micro-LED显示器件。\n\n[0056]以上对本申请实施例所提供的一种micro-LED显示器件的制作方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示领域，特别是涉及一种micro-LED显示器件的制作方法。\n\n背景技术\n\n[0002]Micro-LED发展成未来显示技术的热点之一，和目前的LCD、OLED显示器件相比，具有反应快、高色域、高像素、低能耗等优势，但其技术难点多且复杂，特别是其关键技术：巨量转移技术。\n\n[0003]Micro-LED芯片在制作完成后需要逐一转移到所需位置，需要转移的LED芯片的数量大缺转移后的位置精度要求高，需要耗费大量的资源。随着现有技术的不断发展，巨量转移技术发展至今已经出了不少技术分支，如静电吸附、镭射激光烧触等。\n\n[0004]传统的巨量转移微型LED的方法是通过基板接合(Wafer Bonding)将微型元件自转移基板转移至接收基板。转移方法的其中一种实施方法为直接转移，也就是直接将微型元件阵列自转移基板接合至接收基板，之后再将转移基板移除；另一种实施方法为“间接转移”。此方法包含两次接合/剥离的步骤。在间接转移中，转置头可将位于中间承载基板上的部分微型元件阵列拾起，然后再将微型元件阵列接合至接收基板，接着再把转置头移除。但现有技术中的直接转移或间接转移的巨量转移技术，工艺复杂且成本较高。\n\n[0005]因此，现有的micro-LED显示器件的技术中，还存在着micro-LED的制作过程中需要采用巨量直接转移或是巨量间接转移的技术，但这两种技术的工艺都比较复杂且成本高的问题，急需改进。\n\n发明内容\n\n[0006]本申请涉及一种micro-LED显示器件的制作方法，用于解决现有技术中存在着micro-LED的制作过程中需要采用巨量直接转移或是巨量间接转移的技术，但这两种技术的工艺都比较复杂且成本高的问题。\n\n[0007]为解决上述问题，本申请提供的技术方案如下：\n\n[0008]本申请提供的一种micro-LED显示器件的制作方法，包括以下步骤：\n\n[0009]S10，提供一衬底基板，并在所述衬底基板上沉积LED单晶膜层；\n\n[0010]S20，提供一显示背板，在所述显示背板上制作驱动线路，并在所述驱动线路背离所述显示背板的一侧设置触点；\n\n[0011]S30，在所述显示背板的所述驱动线路上方覆盖一层介电层，并在正对所述触点沿所述介电层设置通孔；\n\n[0012]S40，在所述触点上方沿所述通孔处形成熔融金属点；\n\n[0013]S50，将沉积有所述LED单晶膜层的所述衬底基板与所述显示背板进行对位，使得所述LED单晶膜层一侧正对于设置有金属点的所述介电层一侧；\n\n[0014]S60，分别向所述衬底基板背离所述LED单晶膜层一侧、所述显示背板背离所述介电层一侧施压，使得所述LED单晶膜层与所述介电层完全贴合，绑定在一起；\n\n[0015]S70，将所述衬底基板从所述LED单晶膜层与所述显示背板形成的整体上剥离下来；\n\n[0016]S80，对所述LED单晶膜层背离所述显示背板的一侧进行黄光和刻蚀制程，形成mirco-LED阵列；\n\n[0017]S90，再在所述介电层背离所述显示背板的一侧填充保护层和透明电极层，以形成完整的mirco-LED显示器件。\n\n[0018]根据本申请提供的一优选实施例，步骤“S10”中所述LED单晶膜层采用金属有机化合物化学气象沉积的方式制得。\n\n[0019]根据本申请提供的一优选实施例，步骤“S10”中所述衬底基板为蓝宝石衬底基板、碳化硅衬底基板或是硅衬底基板。\n\n[0020]根据本申请提供的一优选实施例，所述介电层采用氧化硅、氮化硅或是绝缘有机材料。\n\n[0021]根据本申请提供的一优选实施例，所述介电层的高度大于所述驱动线路与所述触点的高度之和；所述通孔的的宽度小于所述驱动线路的宽度，大于所述触点的宽度。\n\n[0022]根据本申请提供的一优选实施例，所述熔融金属点采用金属锡制成。\n\n[0023]根据本申请提供的一优选实施例，步骤“S60”中绑定设置有所述LED单晶膜层的所述衬底基板与设置有所述介电层的所述显示背板时，所述LED单晶膜层和所述介电层之间采用低熔点金属材料进行绑定。\n\n[0024]根据本申请提供的一优选实施例，所述低熔点的金属材料为:锡、铟、铅或是铋。\n\n[0025]根据本申请提供的一优选实施例，所述LED单晶膜层和所述介电层之间的绑定采用低温焊接技术。\n\n[0026]根据本申请提供的一优选实施例，采用激光镭射的方法剥离所述衬底基板。\n\n[0027]与现有技术相比，本申请提供的micro-LED显示器件的制作方法的有益效果为：本申请提供的micro-LED显示器件的制作方法，可以自对准进行LED转移绑定，避免了常规的巨量转移制程，工艺简单，降低了生产成本，大大地提高了产品良率以及micro-LED显示器件的像素。\n\n附图说明\n\n[0028]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0029]图1为本申请实施例提供的micro-LED显示器件的制作方法的流程示意图。\n\n[0030]图2为本申请实施例提供的micro-LED显示器件制作工艺的第一结构示意图。\n\n[0031]图3为本申请实施例提供的micro-LED显示器件制作工艺的第二结构示意图。\n\n[0032]图4为本申请实施例提供的micro-LED显示器件制作工艺的第三结构示意图。\n\n[0033]图5为本申请实施例提供的micro-LED显示器件制作工艺的第四结构示意图。\n\n[0034]图6为本申请实施例提供的micro-LED显示器件制作工艺的第五结构示意图。\n\n[0035]图7为本申请实施例提供的micro-LED显示器件制作工艺的第六结构示意图。\n\n[0036]图8为本申请实施例提供的micro-LED显示器件制作工艺的第七结构示意图。\n\n[0037]图9为本申请实施例提供的micro-LED显示器件制作工艺的第八结构示意图。\n\n[0038]图10为本申请实施例提供的micro-LED显示器件制作工艺的第九结构示意图。\n\n具体实施方式\n\n[0039]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0040]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0041]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0042]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0043]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0044]本申请提供一种micro-LED显示器件的制作方法，具体参阅图1-图10。\n\n[0045]参阅图1，为本申请实施例提供的一种micro-LED显示器件的制作方法的流程示意图。该方法包括如下步骤：S10，提供一衬底基板，并在所述衬底基板上沉积LED单晶膜层；S20，提供一显示背板，在所述显示背板上制作驱动线路并在所述驱动线路背离所述显示背板的一侧设置触点；S30，在所述显示背板的所述驱动线路上方覆盖一层介电层，并在正对所述触点沿所述介电层设置通孔；S40，在所述触点上方沿所述通孔处形成所述熔融金属点；S50，将沉积有所述LED单晶膜层的所述衬底基板与所述显示背板进行对位，使得所述LED单晶膜层一侧正对于设置有金属点的所述介电层一侧；S60，分别向所述衬底基板背离所述LED单晶膜层一侧、所述显示背板背离所述介电层一侧施压，使得所述LED单晶膜层与所述介电层完全贴合，绑定在一起；S70，将所述衬底基板从所述LED单晶膜层与所述显示背板形成的整体上剥离下来；S80，对所述LED单晶膜层背离所述显示背板的一侧进行黄光和刻蚀制程，形成micro-LED阵列；S90，再在所述介电层背离所述显示背板的一侧填充保护层和透明电极层，以形完整的micro-LED显示器件。\n\n[0046]其中，步骤“S10”中所述LED单晶膜层采用金属有机化合物化学气象沉积在大于1000℃的温度下制得。所述衬底基板为蓝宝石衬底基板、碳化硅衬底基板或是硅衬底基板。步骤“S30”中所述介电层采用氧化硅、氮化硅或是绝缘有机材料。步骤“S40”中所述熔融金属点采用金属锡制成。\n\n[0047]参阅图2-10，分别为本申请实施例提供的micro-LED显示器件制作工艺的第一至第九结构示意图。包括：衬底基板1和LED单晶膜层2，所述LED单晶膜层2沉积在所述衬底基板1上。\n\n[0048]附图3中包括：显示背板3，驱动线路4以及设置在所述驱动线路4背离所述显示背板3一侧的触点5。\n\n[0049]附图4中除了所述显示背板3，所述驱动线路4和所述触点5外，继续在所述显示背板3设置所述驱动线路4一侧沉积介电层6，所述介电层6的高度大于所述驱动线路4与所述触点5的高度之和。并在所述驱动线路4和所述触点5正上方设置通孔7，所述通孔7的宽度小于所述驱动线路4的宽度，大于所述触点5的宽度。\n\n[0050]附图5中，继续在所述显示背板3设置所述介电层6的一侧，所述通孔7处形成熔融金属点8，使得所述通孔7被完全填充。\n\n[0051]附图6中，将沉积有所述LED单晶膜层2的所述衬底基板1与所述显示背板3进行对位，使得所述LED单晶膜层2一侧正对于设置有所述熔融金属点8的所述介电层6一侧。\n\n[0052]附图7中，分别向所述衬底基板1背离所述LED单晶膜层2一侧，所述显示背板3背离所述介电层6一侧施压，使得所述LED单晶膜层2与所述介电层6完全贴合，绑定在一起。采用低熔点的金属材料：锡、铟、铅或是铋，但不限于这几种低熔点金属材料，对所述LED单晶膜层2和所述介电层6之间进行绑定，绑定采用低温焊接技术进行。\n\n[0053]附图8中，采用激光镭射的方法将所述衬底基板1从所述LED单晶膜层2与所述显示背板3形成的整体剥离下来。\n\n[0054]附图9中，对所述LED单晶膜层2背离所述显示背板3的一侧进行黄光和刻蚀制程，形成micro-LED阵列9。\n\n[0055]附图10中，继续在所述介电层6背离所述显示背板3的一侧填充保护层10和透明电极层11，以形成完整的micro-LED显示器件。\n\n[0056]以上对本申请实施例所提供的一种micro-LED显示器件的制作方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10734, 23788, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示装置及显示装置的制作方法。\n\n背景技术\n\n[0002]目前，基于无机半导体的发光二极管(Light Emitting Diode,LED)因其发光效率高、成本低、寿命长及环保性等优点，被广泛应用于固态光源或液晶显示装置的背光部分。在液晶显示装置中，LED发出的光线在经过液晶的偏转后，大部分光线会被彩色滤光片吸收掉，只有少量光线出射，导致光的利用率仅有2.8％，这意味着所需的背光的亮度需要超过十倍。\n\n[0003]为提高光利用率，降低功耗成本，多种新型的有源显示技术应运而生，如有机发光二极管(Organic Light-Emitting Diode,OLED)和微发光二极管(Micro Light EmittingDiode,MicroLED)。与OLED相比，MicroLED具有材料稳定性的优势，在亮度及寿命方面的表现也更突出。但对于MicroLED而言，实现全彩化的方案有两种，一种是将大量的红绿蓝三种颜色的微型LED转移到相应位置；另一种是只转移蓝光LED，红色和绿色像素则采用量子点搭配蓝光LED。然而蓝光LED激发量子点材料，在能量转移的过程中，不可避免会存在大量的能量损失，如LED自身波导效应损失，量子点产生的光散射效应等，以及量子点材料自身的自吸收现象，使得光致光发光过程中的光损失过多，导致光的利用率不高。\n\n[0004]综上所述，现有MicroLED显示装置存在光致发光过程中光损失过多导致光利用率不高的问题。故，有必要提供一种显示装置及显示装置的制作方法来改善这一缺陷。\n\n发明内容\n\n[0005]本揭示实施例提供一种显示装置及显示装置的制作方法，用于解决现有MicroLED显示装置存在光致发光过程中光损失过多导致光利用率不高的问题。\n\n[0006]本揭示实施例提供一种显示装置，包括：\n\n[0007]阵列基板；以及\n\n[0008]多个微发光二极管器件，阵列排布于所述阵列基板上；\n\n[0009]其中，所述微发光二极管器件包括第一基底、设置于所述基底上的第二基底和微发光二极管，所述第二基底上设有贯穿所述第二基底的反光通孔，所述微发光二极管位于所述反光通孔内。\n\n[0010]根据本揭示一实施例，所述反光通孔的截面形状为倒置梯形，所述反光通孔的侧壁与所述第二基底的底边形成倾斜角。\n\n[0011]根据本揭示一实施例，所述倾斜角的值介于15°和60°之间。\n\n[0012]根据本揭示一实施例，所述第二基底在垂直于所述阵列基板的方向上的高度大于所述微发光二极管的高度。\n\n[0013]根据本揭示一实施例，所述微发光二极管包括蓝色微发光二极管、红色微发光二极管和绿色微发光二极管。\n\n[0014]根据本揭示一实施例，所述显示装置还包括量子点膜层，所述量子点膜层设置于部分所述反光通孔内，并覆盖所述发光二极管，所述微发光二极管包括蓝色微发光二极管。\n\n[0015]根据本揭示一实施例，所述量子点膜层的材料包括含有量子点的光固化性材料。\n\n[0016]根据本揭示一实施例，所述第二基底的材料包括金、银或铝。\n\n[0017]本揭示实施例还提供一种显示装置的制作方法，包括：\n\n[0018]提供第二基底，在所述第二基底上形成连续排布的多个通孔；\n\n[0019]对所述通孔进行磨砂并抛光，形成反光通孔；\n\n[0020]提供第一基底，在所述第一基底上形成金属电极；\n\n[0021]提供微发光二极管，将所述微发光二极管转移至所述第一基底上；\n\n[0022]将所述第二基底与所述第一基底贴合，形成发光二极管基板，所述发光二极管与所述反光通孔一一对应，并位于所述反光通孔内；以及\n\n[0023]切割所述发光二极管基板，形成单个微发光二极管器件。\n\n[0024]根据本揭示一实施例，所述制作方法还包括：\n\n[0025]提供阵列基板，将所述微发光二极管器件转移至所述阵列基板上；以及\n\n[0026]在所述反光通孔内填充量子点溶液，固化后形成量子点膜层，所述量子点膜层覆盖所述微发光二极管。\n\n[0027]本揭示实施例的有益效果：本揭示实施例提供一种显示装置，包括阵列基板和微发光二极管器件，所述微发光二极管器件包括第一基底、第二基底和微发光二极管，通过在第二基底上设置有反光通孔，并将微发光二极管设置于所述反光通孔内部，利用反光通孔两侧光滑的侧壁对光线的反射提取作用，提高微发光二极管的光提取利用率。\n\n附图说明\n\n[0028]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是揭示的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0029]图1为本揭示实施例一提供的显示装置的截面结构示意图；\n\n[0030]图2为本揭示实施例一提供的微发光二极管器件的截面结构示意图；\n\n[0031]图3为本揭示实施例二提供的显示装置的截面结构示意图；\n\n[0032]图4A为本揭示实施例三提供的第二基板的结构示意图；\n\n[0033]图4B为本揭示实施例三提供的第一基板的结构示意图；\n\n[0034]图4C为本揭示实施例三提供的第一基板的结构示意图；\n\n[0035]图4D为本揭示实施例三提供的发光二极管基板的结构示意图；\n\n[0036]图4E为本揭示实施例三提供的微发光二极管器件的结构示意图；\n\n[0037]图4F为本揭示实施例三提供的阵列基板的结构示意图；\n\n[0038]图4G为本揭示实施例三提供的阵列基板的结构示意图。\n\n具体实施方式\n\n[0039]以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。\n\n[0040]下面结合附图和具体实施例对本揭示做进一步的说明。\n\n[0041]实施例一：\n\n[0042]本揭示实施例提供一种显示装置，下面结合图1和图2进行详细说明。\n\n[0043]如图1所示，图1为本揭示实施例提供的显示装置的截面结构示意图，所述显示装置100包括阵列基板110和阵列排布于所述阵列基板110上的多个微发光二极管器件，所述阵列基板110上设有薄膜晶体管以及像素驱动电路。\n\n[0044]如图2所示，图2为本揭示实施例提供的微发光二极管器件的截面结构示意图，所述微发光二极管器件包括第一基底121、设置于所述第一基底121上的第二基底122和微发光二极管123，所述第一基底121上形成有金属电极，所述微发光二极管123与所述金属电极连接。所述第二基底122上设有贯穿所述第二基底122的反光通孔124，所述微发光二极管123位于所述反光通孔124内，所述反光通孔124的两个侧壁表面光滑，对于微发光二极管123发射的光具有反射提取的作用，所述反光通孔124的侧壁将微发光二极管123如箭头所示的侧边以及底边发散的光线反射至微发光二极管123的出光方向，从而将微发光二极管123发出的光线进行了汇聚，提高微发光二极管123的光提取效率。\n\n[0045]在本揭示实施例中，所述反光通孔124的截面形状为倒置梯形，所述发光通孔124的侧壁与所述第二基底122的底边形成倾斜角a，具有倾斜角a的侧壁能够将微发光二极管123发散的光线反射至出光方向，提高微发光二极管123的光提取效率。\n\n[0046]优选的，为保证反射效果的同时不影响出光视角，所述倾斜角a的值介于15°和60°之间。\n\n[0047]优选的，所述第一基底121的材料包括陶瓷材料，所述金属电极的材料可以包括银、铝或铜等导电性较好的金属材料。\n\n[0048]在本揭示实施例中，所述微发光二极管123包括蓝色微发光二极管、红色微发光二极管和绿色微发光二极管，以此实现显示装置100的全彩化显示。其中，各个颜色的所述微发光二极管的排布方式可根据显示装置的子像素区域的排布方式进行排布，此处不做限制。\n\n[0049]在本揭示实施例中，所述第二基底122在垂直于所述阵列基板110的方向上的高度要大于所述微发光二极管123在垂直于所述阵列基板110的方向上的高度，以便将微发光二极管123限制在所述反光通孔124内部，提高反光通孔124对微发光二极管123光线的反射提取作用。同时，第二基底122还可以作为相邻微发光二极管123之间的挡墙，能够减少相邻不同颜色微发光二极管之间发出的光线发生串扰，提高显示装置100的显示效果。\n\n[0050]优选的，为保证所述反光通孔124的反射效果以及所述第二基底122作为挡墙的光线阻挡作用，所述第二基底可以选用金、银或铝等反射率较高的金属材料。当然，在一些实施例中，所述第二基底122也可以选用其他反射率较高且不透光的非金属材料，此处不做限制。\n\n[0051]本揭示实施例的有益效果：本揭示实施例提供一种显示装置100，包括阵列基板110和微发光二极管器件，所述微发光二极管器件包括第一基底121、第二基底122和微发光二极管123，通过在第二基底122上设置有反光通孔124，并将微发光二极管123设置于所述反光通孔124内部，利用反光通孔124两侧光滑的侧壁对光线的反射提取作用，提高微发光二极管123的光提取利用率。\n\n[0052]实施例二：\n\n[0053]本揭示实施例提供一种显示装置，下面结合图3进行详细说明。\n\n[0054]如图3所示，图3为本揭示实施例提供的显示装置200的截面结构示意图，所述显示装置200包括阵列基板210和阵列排布于所述阵列基板210上的多个微发光二极管器件。\n\n[0055]所述微发光二极管器件包括第一基底221、设置于所述第一基底221上的第二基底222和微发光二极管223，所述第一基底221上形成有金属电极，所述微发光二极管223与所述金属电极连接。所述第二基底222上设有贯穿所述第二基底222的反光通孔224，所述微发光二极管223位于所述反光通孔224内，所述反光通孔224的两个侧壁表面光滑，对于微发光二极管223发射的光具有反射提取的作用，所述反光通孔224的侧壁将微发光二极管223如箭头所示的侧边以及底边发散的光线反射至微发光二极管223的出光方向，从而将微发光二极管223发出的光线进行了汇聚，提高微发光二极管223的光提取效率。\n\n[0056]在本揭示实施例中，所述反光通孔224的截面形状为倒置梯形，所述发光通孔224的侧壁与所述第二基底222的底边形成倾斜角a，具有倾斜角a的侧壁能够将微发光二极管223发散的光线反射至出光方向，提高微发光二极管223的光提取效率。\n\n[0057]优选的，为保证反射效果的同时不影响出光视角，所述倾斜角a的值介于15°和60°之间。\n\n[0058]在本揭示实施例中，所述显示装置200还包括量子点膜层，所述量子点膜层设置于部分所述反光通孔224内，并覆盖位于所述反光通孔224内的所述微发光二极管223。其中，所述微发光二极管223均为蓝色微发光二极管，所述量子点膜层包括红色量子点膜层231和绿色量子点膜层232，所述红色量子点膜层231和位于其下方的微发光二极管对应阵列基板210的红色子像素区域，所述绿色量子点膜层232和位于其下方的微发光二极管对应阵列基板210的绿色子像素区域，为覆盖量子点膜层的蓝色微发光二极管对应蓝色子像素区域，通过相应量子点膜层对蓝色微发光二极管发出光线的转换，实现显示装置200的全彩化显示。\n\n[0059]优选的，所述量子点膜层的材料包括含有量子点的光固化性材料。\n\n[0060]在本揭示实施例中，所述第二基底222在垂直于所述阵列基板210的方向上的高度要大于所述微发光二极管223在垂直于所述阵列基板210的方向上的高度，同时还应高于量子点膜层的高度，从而将微发光二极管223和量子点膜层限制在所述反光通孔224内部，具有倾斜角的侧壁对量子点膜层中量子点的光线发射具有反射作用，提高反光通孔224对微发光二极管223光线的反射提取作用。同时，第二基底222还可以作为相邻微发光二极管223和相邻量子点膜层之间的挡墙，能够减少相邻微发光二极管223以及相邻不同颜色量子点膜层之间的光线发生串扰，提高显示装置200的显示效果。\n\n[0061]优选的，为保证所述反光通孔224的反射效果以及所述第二基底222作为挡墙的光线阻挡作用，所述第二基底222可以选用金、银或铝等反射率较高的金属材料。当然，在一些实施例中，所述第二基底222也可以选用其他反射率较高且不透光的非金属材料，此处不做限制。\n\n[0062]本揭示实施例的有益效果：本揭示实施例提供一种显示装置200，包括阵列基板210和微发光二极管器件，所述微发光二极管器件包括第一基底221、第二基底222和微发光二极管223，通过在第二基底222上设置有反光通孔224，并将微发光二极管223设置于所述反光通孔224内部，利用反光通孔224两侧光滑的侧壁对光线的反射提取作用，提高微发光二极管223的光提取利用率。\n\n[0063]实施例三：\n\n[0064]本揭示实施例提供一种显示装置的制作方法，下面结合图4A至图4G进行详细说明，其中图4A为第二基板的结构示意图，图4B至图4C为第一基板的结构示意图，图4D至图4E为发光二极管基板的结构示意图，图4F至图4G为阵列基板的结构示意图。\n\n[0065]本揭示实施例提供的显示装置的制作方法包括：\n\n[0066]步骤S10：如图4A所示，提供第二基底320，在所述第二基底320上形成连续排布的多个通孔；\n\n[0067]步骤S20：对所述通孔进行磨砂并抛光，形成两侧侧壁光滑，且具有一定倾斜角度的反光通孔321；\n\n[0068]步骤S30：如图4B所示，提供第一基底310，在所述第一基底310上形成金属电极311；\n\n[0069]步骤S30：如图4C所示，提供微发光二极管330，将所述微发光二极管330转移至所述第一基底310上，并将所述微发光二极管330与所述金属电极311进行焊接；\n\n[0070]步骤S40：如图4D所示，将所述第一基底310与所述第二基底320通过固化胶进行贴合，形成发光二极管基板，所述微发光二极管330与所述反光通孔322一一对应，并位于所述反光通孔322内；\n\n[0071]步骤S50：如图4E所示，切割所述发光二极管基板，形成单个微发光二极管器件340。\n\n[0072]在本揭示实施例中，所述步骤S10中，形成所述通孔321的方法包括机械冲压、热压或气压等方法。\n\n[0073]在本揭示实施例中，所述反光通孔322的两个侧壁表面光滑，对于微发光二极管330发射的光具有反射提取的作用，所述反光通孔322的侧壁将微发光二极管330侧边以及底边发散的光线反射至微发光二极管330的出光方向，从而将微发光二极管330发出的光线进行了汇聚，提高微发光二极管330的光提取效率。\n\n[0074]优选的，为保证反射效果，并且不影响出光视角，所述倾斜角的值介于15°和60°之间。同时，所述第二基底320选用金、银或铝等反射率较高的金属材料，也有利于提高反光通孔322的反射效果。\n\n[0075]在本揭示实施例中，所述制作方法还包括：\n\n[0076]步骤S60：如图4F所示，提供阵列基板350，所述阵列基板350上设有像素驱动电路，将所述微发光二极管器件340转移至阵列基板350上；\n\n[0077]步骤S70：如图4G所示，通过喷墨打印的方法在所述反光通孔322内填充量子点溶液，固化后形成量子点膜层，所述量子点膜层覆盖所述微发光二极管器件340。\n\n[0078]在本揭示实施例中，所述微发光二极管330为蓝色微发光二极管，通过在不同颜色子像素区域中的微发光二极管上覆盖与子像素区域颜色相同的量子点膜层，利用量子点膜层作为光转换层，实现显示装置的全彩化显示。当然，在一些实施例中，所述微发光二极管330也可以包括蓝色微发光二极管、红色微发光二极管和绿色微发光二极管，通过三色微发光二极管的组合方式实现显示装置的全彩化显示，并且无需本实施例所述的量子点膜层。\n\n[0079]本揭示实施例的有益效果：本揭示实施例提供一种显示装置的制作方法，通过在第二基板320上形成连续排布并且侧壁光滑的反光通孔322，并将微发光二极管330设置于所述反光通孔322内，利用反光通孔322两侧光滑的侧壁对光线的反射提取作用，提高微发光二极管330的光提取利用率。\n\n[0080]综上所述，虽然本揭示以优选实施例揭露如上，但上述优选实施例并非用以限制本揭示，本领域的普通技术人员，在不脱离本揭示的精神和范围内，均可作各种更动与润饰，因此本揭示的保护范围以权利要求界定的范围为基准。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示装置及显示装置的制作方法。\n\n背景技术\n\n[0002]目前，基于无机半导体的发光二极管(Light Emitting Diode,LED)因其发光效率高、成本低、寿命长及环保性等优点，被广泛应用于固态光源或液晶显示装置的背光部分。在液晶显示装置中，LED发出的光线在经过液晶的偏转后，大部分光线会被彩色滤光片吸收掉，只有少量光线出射，导致光的利用率仅有2.8％，这意味着所需的背光的亮度需要超过十倍。\n\n[0003]为提高光利用率，降低功耗成本，多种新型的有源显示技术应运而生，如有机发光二极管(Organic Light-Emitting Diode,OLED)和微发光二极管(Micro Light EmittingDiode,MicroLED)。与OLED相比，MicroLED具有材料稳定性的优势，在亮度及寿命方面的表现也更突出。但对于MicroLED而言，实现全彩化的方案有两种，一种是将大量的红绿蓝三种颜色的微型LED转移到相应位置；另一种是只转移蓝光LED，红色和绿色像素则采用量子点搭配蓝光LED。然而蓝光LED激发量子点材料，在能量转移的过程中，不可避免会存在大量的能量损失，如LED自身波导效应损失，量子点产生的光散射效应等，以及量子点材料自身的自吸收现象，使得光致光发光过程中的光损失过多，导致光的利用率不高。\n\n[0004]综上所述，现有MicroLED显示装置存在光致发光过程中光损失过多导致光利用率不高的问题。故，有必要提供一种显示装置及显示装置的制作方法来改善这一缺陷。\n\n发明内容\n\n[0005]本揭示实施例提供一种显示装置及显示装置的制作方法，用于解决现有MicroLED显示装置存在光致发光过程中光损失过多导致光利用率不高的问题。\n\n[0006]本揭示实施例提供一种显示装置，包括：\n\n[0007]阵列基板；以及\n\n[0008]多个微发光二极管器件，阵列排布于所述阵列基板上；\n\n[0009]其中，所述微发光二极管器件包括第一基底、设置于所述基底上的第二基底和微发光二极管，所述第二基底上设有贯穿所述第二基底的反光通孔，所述微发光二极管位于所述反光通孔内。\n\n[0010]根据本揭示一实施例，所述反光通孔的截面形状为倒置梯形，所述反光通孔的侧壁与所述第二基底的底边形成倾斜角。\n\n[0011]根据本揭示一实施例，所述倾斜角的值介于15°和60°之间。\n\n[0012]根据本揭示一实施例，所述第二基底在垂直于所述阵列基板的方向上的高度大于所述微发光二极管的高度。\n\n[0013]根据本揭示一实施例，所述微发光二极管包括蓝色微发光二极管、红色微发光二极管和绿色微发光二极管。\n\n[0014]根据本揭示一实施例，所述显示装置还包括量子点膜层，所述量子点膜层设置于部分所述反光通孔内，并覆盖所述发光二极管，所述微发光二极管包括蓝色微发光二极管。\n\n[0015]根据本揭示一实施例，所述量子点膜层的材料包括含有量子点的光固化性材料。\n\n[0016]根据本揭示一实施例，所述第二基底的材料包括金、银或铝。\n\n[0017]本揭示实施例还提供一种显示装置的制作方法，包括：\n\n[0018]提供第二基底，在所述第二基底上形成连续排布的多个通孔；\n\n[0019]对所述通孔进行磨砂并抛光，形成反光通孔；\n\n[0020]提供第一基底，在所述第一基底上形成金属电极；\n\n[0021]提供微发光二极管，将所述微发光二极管转移至所述第一基底上；\n\n[0022]将所述第二基底与所述第一基底贴合，形成发光二极管基板，所述发光二极管与所述反光通孔一一对应，并位于所述反光通孔内；以及\n\n[0023]切割所述发光二极管基板，形成单个微发光二极管器件。\n\n[0024]根据本揭示一实施例，所述制作方法还包括：\n\n[0025]提供阵列基板，将所述微发光二极管器件转移至所述阵列基板上；以及\n\n[0026]在所述反光通孔内填充量子点溶液，固化后形成量子点膜层，所述量子点膜层覆盖所述微发光二极管。\n\n[0027]本揭示实施例的有益效果：本揭示实施例提供一种显示装置，包括阵列基板和微发光二极管器件，所述微发光二极管器件包括第一基底、第二基底和微发光二极管，通过在第二基底上设置有反光通孔，并将微发光二极管设置于所述反光通孔内部，利用反光通孔两侧光滑的侧壁对光线的反射提取作用，提高微发光二极管的光提取利用率。\n\n附图说明\n\n[0028]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是揭示的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0029]图1为本揭示实施例一提供的显示装置的截面结构示意图；\n\n[0030]图2为本揭示实施例一提供的微发光二极管器件的截面结构示意图；\n\n[0031]图3为本揭示实施例二提供的显示装置的截面结构示意图；\n\n[0032]图4A为本揭示实施例三提供的第二基板的结构示意图；\n\n[0033]图4B为本揭示实施例三提供的第一基板的结构示意图；\n\n[0034]图4C为本揭示实施例三提供的第一基板的结构示意图；\n\n[0035]图4D为本揭示实施例三提供的发光二极管基板的结构示意图；\n\n[0036]图4E为本揭示实施例三提供的微发光二极管器件的结构示意图；\n\n[0037]图4F为本揭示实施例三提供的阵列基板的结构示意图；\n\n[0038]图4G为本揭示实施例三提供的阵列基板的结构示意图。\n\n具体实施方式\n\n[0039]以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。\n\n[0040]下面结合附图和具体实施例对本揭示做进一步的说明。\n\n[0041]实施例一：\n\n[0042]本揭示实施例提供一种显示装置，下面结合图1和图2进行详细说明。\n\n[0043]如图1所示，图1为本揭示实施例提供的显示装置的截面结构示意图，所述显示装置100包括阵列基板110和阵列排布于所述阵列基板110上的多个微发光二极管器件，所述阵列基板110上设有薄膜晶体管以及像素驱动电路。\n\n[0044]如图2所示，图2为本揭示实施例提供的微发光二极管器件的截面结构示意图，所述微发光二极管器件包括第一基底121、设置于所述第一基底121上的第二基底122和微发光二极管123，所述第一基底121上形成有金属电极，所述微发光二极管123与所述金属电极连接。所述第二基底122上设有贯穿所述第二基底122的反光通孔124，所述微发光二极管123位于所述反光通孔124内，所述反光通孔124的两个侧壁表面光滑，对于微发光二极管123发射的光具有反射提取的作用，所述反光通孔124的侧壁将微发光二极管123如箭头所示的侧边以及底边发散的光线反射至微发光二极管123的出光方向，从而将微发光二极管123发出的光线进行了汇聚，提高微发光二极管123的光提取效率。\n\n[0045]在本揭示实施例中，所述反光通孔124的截面形状为倒置梯形，所述发光通孔124的侧壁与所述第二基底122的底边形成倾斜角a，具有倾斜角a的侧壁能够将微发光二极管123发散的光线反射至出光方向，提高微发光二极管123的光提取效率。\n\n[0046]优选的，为保证反射效果的同时不影响出光视角，所述倾斜角a的值介于15°和60°之间。\n\n[0047]优选的，所述第一基底121的材料包括陶瓷材料，所述金属电极的材料可以包括银、铝或铜等导电性较好的金属材料。\n\n[0048]在本揭示实施例中，所述微发光二极管123包括蓝色微发光二极管、红色微发光二极管和绿色微发光二极管，以此实现显示装置100的全彩化显示。其中，各个颜色的所述微发光二极管的排布方式可根据显示装置的子像素区域的排布方式进行排布，此处不做限制。\n\n[0049]在本揭示实施例中，所述第二基底122在垂直于所述阵列基板110的方向上的高度要大于所述微发光二极管123在垂直于所述阵列基板110的方向上的高度，以便将微发光二极管123限制在所述反光通孔124内部，提高反光通孔124对微发光二极管123光线的反射提取作用。同时，第二基底122还可以作为相邻微发光二极管123之间的挡墙，能够减少相邻不同颜色微发光二极管之间发出的光线发生串扰，提高显示装置100的显示效果。\n\n[0050]优选的，为保证所述反光通孔124的反射效果以及所述第二基底122作为挡墙的光线阻挡作用，所述第二基底可以选用金、银或铝等反射率较高的金属材料。当然，在一些实施例中，所述第二基底122也可以选用其他反射率较高且不透光的非金属材料，此处不做限制。\n\n[0051]本揭示实施例的有益效果：本揭示实施例提供一种显示装置100，包括阵列基板110和微发光二极管器件，所述微发光二极管器件包括第一基底121、第二基底122和微发光二极管123，通过在第二基底122上设置有反光通孔124，并将微发光二极管123设置于所述反光通孔124内部，利用反光通孔124两侧光滑的侧壁对光线的反射提取作用，提高微发光二极管123的光提取利用率。\n\n[0052]实施例二：\n\n[0053]本揭示实施例提供一种显示装置，下面结合图3进行详细说明。\n\n[0054]如图3所示，图3为本揭示实施例提供的显示装置200的截面结构示意图，所述显示装置200包括阵列基板210和阵列排布于所述阵列基板210上的多个微发光二极管器件。\n\n[0055]所述微发光二极管器件包括第一基底221、设置于所述第一基底221上的第二基底222和微发光二极管223，所述第一基底221上形成有金属电极，所述微发光二极管223与所述金属电极连接。所述第二基底222上设有贯穿所述第二基底222的反光通孔224，所述微发光二极管223位于所述反光通孔224内，所述反光通孔224的两个侧壁表面光滑，对于微发光二极管223发射的光具有反射提取的作用，所述反光通孔224的侧壁将微发光二极管223如箭头所示的侧边以及底边发散的光线反射至微发光二极管223的出光方向，从而将微发光二极管223发出的光线进行了汇聚，提高微发光二极管223的光提取效率。\n\n[0056]在本揭示实施例中，所述反光通孔224的截面形状为倒置梯形，所述发光通孔224的侧壁与所述第二基底222的底边形成倾斜角a，具有倾斜角a的侧壁能够将微发光二极管223发散的光线反射至出光方向，提高微发光二极管223的光提取效率。\n\n[0057]优选的，为保证反射效果的同时不影响出光视角，所述倾斜角a的值介于15°和60°之间。\n\n[0058]在本揭示实施例中，所述显示装置200还包括量子点膜层，所述量子点膜层设置于部分所述反光通孔224内，并覆盖位于所述反光通孔224内的所述微发光二极管223。其中，所述微发光二极管223均为蓝色微发光二极管，所述量子点膜层包括红色量子点膜层231和绿色量子点膜层232，所述红色量子点膜层231和位于其下方的微发光二极管对应阵列基板210的红色子像素区域，所述绿色量子点膜层232和位于其下方的微发光二极管对应阵列基板210的绿色子像素区域，为覆盖量子点膜层的蓝色微发光二极管对应蓝色子像素区域，通过相应量子点膜层对蓝色微发光二极管发出光线的转换，实现显示装置200的全彩化显示。\n\n[0059]优选的，所述量子点膜层的材料包括含有量子点的光固化性材料。\n\n[0060]在本揭示实施例中，所述第二基底222在垂直于所述阵列基板210的方向上的高度要大于所述微发光二极管223在垂直于所述阵列基板210的方向上的高度，同时还应高于量子点膜层的高度，从而将微发光二极管223和量子点膜层限制在所述反光通孔224内部，具有倾斜角的侧壁对量子点膜层中量子点的光线发射具有反射作用，提高反光通孔224对微发光二极管223光线的反射提取作用。同时，第二基底222还可以作为相邻微发光二极管223和相邻量子点膜层之间的挡墙，能够减少相邻微发光二极管223以及相邻不同颜色量子点膜层之间的光线发生串扰，提高显示装置200的显示效果。\n\n[0061]优选的，为保证所述反光通孔224的反射效果以及所述第二基底222作为挡墙的光线阻挡作用，所述第二基底222可以选用金、银或铝等反射率较高的金属材料。当然，在一些实施例中，所述第二基底222也可以选用其他反射率较高且不透光的非金属材料，此处不做限制。\n\n[0062]本揭示实施例的有益效果：本揭示实施例提供一种显示装置200，包括阵列基板210和微发光二极管器件，所述微发光二极管器件包括第一基底221、第二基底222和微发光二极管223，通过在第二基底222上设置有反光通孔224，并将微发光二极管223设置于所述反光通孔224内部，利用反光通孔224两侧光滑的侧壁对光线的反射提取作用，提高微发光二极管223的光提取利用率。\n\n[0063]实施例三：\n\n[0064]本揭示实施例提供一种显示装置的制作方法，下面结合图4A至图4G进行详细说明，其中图4A为第二基板的结构示意图，图4B至图4C为第一基板的结构示意图，图4D至图4E为发光二极管基板的结构示意图，图4F至图4G为阵列基板的结构示意图。\n\n[0065]本揭示实施例提供的显示装置的制作方法包括：\n\n[0066]步骤S10：如图4A所示，提供第二基底320，在所述第二基底320上形成连续排布的多个通孔；\n\n[0067]步骤S20：对所述通孔进行磨砂并抛光，形成两侧侧壁光滑，且具有一定倾斜角度的反光通孔321；\n\n[0068]步骤S30：如图4B所示，提供第一基底310，在所述第一基底310上形成金属电极311；\n\n[0069]步骤S30：如图4C所示，提供微发光二极管330，将所述微发光二极管330转移至所述第一基底310上，并将所述微发光二极管330与所述金属电极311进行焊接；\n\n[0070]步骤S40：如图4D所示，将所述第一基底310与所述第二基底320通过固化胶进行贴合，形成发光二极管基板，所述微发光二极管330与所述反光通孔322一一对应，并位于所述反光通孔322内；\n\n[0071]步骤S50：如图4E所示，切割所述发光二极管基板，形成单个微发光二极管器件340。\n\n[0072]在本揭示实施例中，所述步骤S10中，形成所述通孔321的方法包括机械冲压、热压或气压等方法。\n\n[0073]在本揭示实施例中，所述反光通孔322的两个侧壁表面光滑，对于微发光二极管330发射的光具有反射提取的作用，所述反光通孔322的侧壁将微发光二极管330侧边以及底边发散的光线反射至微发光二极管330的出光方向，从而将微发光二极管330发出的光线进行了汇聚，提高微发光二极管330的光提取效率。\n\n[0074]优选的，为保证反射效果，并且不影响出光视角，所述倾斜角的值介于15°和60°之间。同时，所述第二基底320选用金、银或铝等反射率较高的金属材料，也有利于提高反光通孔322的反射效果。\n\n[0075]在本揭示实施例中，所述制作方法还包括：\n\n[0076]步骤S60：如图4F所示，提供阵列基板350，所述阵列基板350上设有像素驱动电路，将所述微发光二极管器件340转移至阵列基板350上；\n\n[0077]步骤S70：如图4G所示，通过喷墨打印的方法在所述反光通孔322内填充量子点溶液，固化后形成量子点膜层，所述量子点膜层覆盖所述微发光二极管器件340。\n\n[0078]在本揭示实施例中，所述微发光二极管330为蓝色微发光二极管，通过在不同颜色子像素区域中的微发光二极管上覆盖与子像素区域颜色相同的量子点膜层，利用量子点膜层作为光转换层，实现显示装置的全彩化显示。当然，在一些实施例中，所述微发光二极管330也可以包括蓝色微发光二极管、红色微发光二极管和绿色微发光二极管，通过三色微发光二极管的组合方式实现显示装置的全彩化显示，并且无需本实施例所述的量子点膜层。\n\n[0079]本揭示实施例的有益效果：本揭示实施例提供一种显示装置的制作方法，通过在第二基板320上形成连续排布并且侧壁光滑的反光通孔322，并将微发光二极管330设置于所述反光通孔322内，利用反光通孔322两侧光滑的侧壁对光线的反射提取作用，提高微发光二极管330的光提取利用率。\n\n[0080]综上所述，虽然本揭示以优选实施例揭露如上，但上述优选实施例并非用以限制本揭示，本领域的普通技术人员，在不脱离本揭示的精神和范围内，均可作各种更动与润饰，因此本揭示的保护范围以权利要求界定的范围为基准。');
INSERT INTO `os_patent_instruction_text` VALUES (10735, 23789, '技术领域\n\n[0001]本申请涉及显示技术领域，特别是涉及一种微发光二极管显示面板及其制备方法、显示装置。\n\n背景技术\n\n[0002]微型发光二极管(uLED)因其优越的显示性能、超长的寿命和低功耗等诸多优点，成为近年来显示技术研究的热点。\n\n[0003]现有技术中微型发光二极管显示屏的主要制作流程如下：首先进行TFT基板的制作，TFT基板的制作可以采用类似于TFT-LCD或AMOLED显示屏的制备工艺，TFT基板制备完成之后，在基板上制备芯片焊接材料，之后再将微型发光二极管芯片通过转移技术转移到像素指定位置，最后对芯片进行焊接、封装。在整个制备工艺过程中，通常以锡膏作为焊接材料，基于锡膏的芯片焊接，通常是将锡膏用钢网印刷的方式来获得预设的图案，且采用钢网印刷的方法起印刷质量较大程度受钢网制作质量及寿命的影响，随着印刷次数的增加，钢网的特性会发生变化，从而导致锡膏的图案化受影响。\n\n发明内容\n\n[0004]本申请提供一种微发光二极管显示面板及其制备方法、显示装置，能够解决现有技术中锡膏图案化受钢网制作质量、寿命以及特性影响的问题。\n\n[0005]为解决上述技术问题，本申请采用的一个技术方案是：提供一种微发光二极管显示面板的制备方法，所述制备方法包括：制备阵列基板；在所述阵列基板上制备图案化的光阻层，所述光阻层至少暴露部分所述阵列基板；在所述图案化的光阻层和所述阵列基板上涂布焊接材料层；对所述焊接材料层进行显影处理以形成图案化的焊接材料层；在所述焊接材料层上制备微发光二极管以形成所述微发光二极管显示面板。\n\n[0006]其中，所述在所述阵列基板上制备图案化的光阻层包括：在所述阵列基板上涂布光阻材料；提供一掩模板，并将所述掩模板和所述阵列基板对准；对所述阵列基板进行曝光和显影处理，以形成图案化的光阻层。\n\n[0007]其中，所述掩模板采用负性光阻或者正性光阻中的一种。\n\n[0008]其中，所述掩模板至少包括全透明区和半透明区。\n\n[0009]其中，所述掩模板至少包括不透明区和半透明区。\n\n[0010]其中，所述掩模板的所述半透明区的透光率范围为10％～90％。\n\n[0011]其中，所述在所述焊接材料层上制备微发光二极管以形成所述微发光二极管显示面板包括：将所述微发光二极管转运至所述图案化的焊接材料层上；对所述微发光二极管进行回流焊接处理；对回流焊接处理完后的所述微发光二极管进行封装。\n\n[0012]其中，所述焊接材料为锡膏。\n\n[0013]为解决上述技术问题，本申请采用的另一个技术方案是：提供一种基于上述任一所述制备方法制备的微发光二极管显示面板，所述显示面板包括：阵列基板；图案化的光阻层，形成于所述阵列基板上，且所述光阻层至少部分暴露所述阵列基板；焊接材料层，形成于所述阵列基板上未被所述光阻层覆盖的区域；发光层，包括多个形成于所述焊接材料层上的微发光二极管；封装层，覆盖所述光阻层以及多个所述微发光二极管。\n\n[0014]为解决上述技术问题，本申请采用的又一个技术方案是：提供一种显示装置，所述显示装置包括上述所述的微发光二极管显示面板。\n\n[0015]本申请的有益效果是：提供一种微发光二极管显示面板及其制备方法、显示装置，通过采用光阻材料结合传统的光刻工艺制备图案化的光阻层，制备图案化的焊接材料层，取代传统钢网印刷制备图案化焊接材料层，制作的图案化的焊接材料层的精度更高，且无需钢网可以多次重复制作，提高了工艺的可靠性。\n\n附图说明\n\n[0016]为了更清楚地说明本申请的方案，下面将对实施例描述中所需要使用的附图作一个简单介绍，显而易见地，下面描述中的附图是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0017]图1是本申请微发光二极管显示面板制备方法一实施方式的流程示意图；\n\n[0018]图2是本申请微发光二极管显示面板一实施方式的制备示意图；\n\n[0019]图3是本申请步骤S200一实施方式的流程示意图；\n\n[0020]图4是本申请掩模板一实施方式的结构示意图；\n\n[0021]图5是本申请步骤S500一实施方式的流程示意图；\n\n[0022]图6是本申请微发光二极管显示面板一实施方式的结构示意图；\n\n[0023]图7是本申请显示装置一实施方式的结构示意图。\n\n具体实施方式\n\n[0024]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本申请的一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0025]除非另有定义，本文所使用的所有的技术和科学术语与属于本申请技术领域的技术人员通常理解的含义相同；本文中在申请的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本申请；本申请的说明书和权利要求书及上述附图说明中的术语“包括”和“具有”以及它们的任何变形，意图在于覆盖不排他的包含。本申请的说明书和权利要求书或上述附图中的术语“第一”、“第二”等是用于区别不同对象，而不是用于描述特定顺序。\n\n[0026]在本文中提及“实施例”意味着，结合实施例描述的特定特征、结构或特性可以包含在本申请的至少一个实施例中。在说明书中的各个位置出现该短语并不一定均是指相同的实施例，也不是与其它实施例互斥的独立的或备选的实施例。本领域技术人员显式地和隐式地理解的是，本文所描述的实施例可以与其它实施例相结合。\n\n[0027]请参阅图1，图1为本申请微发光二极管显示面板制备方法一实施方式的流程示意图，如图所示本申请提供的微发光二极管显示面板制备方法包括如下步骤：\n\n[0028]S100，制备阵列基板。\n\n[0029]结合图2，图2为本申请微发光二极管显示面板一实施方式的制备示意图，如图2首先制备一阵列基板100，可选地，该阵列基板100至少可以包括衬底基板(图未示)，且还包括采用现有技术依次形成于衬底基板上栅极层(图未示)、绝缘层(图未示)、半导体层(图未示)以及像素电极(图未示)。在半导体层上设有源漏极(图未示)，其中所述漏极和所述像素电极连接。\n\n[0030]当然，本申请提供的阵列基板100还可以包括现有技术中的其他膜层结构，此处不做进一步描述。\n\n[0031]S200，在阵列基板上制备图案化的光阻层，光阻层至少暴露部分阵列基板。\n\n[0032]请进一步结合图3，图3为本申请步骤S200一实施方式的流程示意图，如图3，本申请步骤S200进一步包括如下子步骤：\n\n[0033]S210，在阵列基板上涂布光阻材料。\n\n[0034]进一步，在制备好的阵列基板100上涂布光阻材料110，可选地，本申请的光阻材料110可以为正性光阻材料或者负性光阻材料中的一种，此处不做具体限定。\n\n[0035]S220，提供一掩模板，并将掩模板和阵列基板对准。\n\n[0036]提供一掩模板200，为保证显示面板后续的正常工作需并将该掩模板200和阵列基板100精确对准，即确保掩模板200上图形的准确对准。\n\n[0037]可选地，结合图4，图4为本申请掩模板一实施方式的结构示意图。本申请选用的掩模板200的材料为正性光阻材料或者负性光阻材料中的一种。在本申请一具体应用场景中，掩模板200选用负性光阻材料，且该掩模板200至少包括阵列排布的全透明区210和半透明区220。其中，全透明区210的透光率为100％，半透明区220的透光率范围为10％-90％，具体可以是10％、50％、90％等等，此处不做具体限定。\n\n[0038]当然在本申请的另一实施方式中，掩模板200还可以选用正性光阻材料，且该掩模板200至少包括阵列排布的不透明区和半透明区，其中，半透明区的透光率范围和采用负性光阻材料层时一样为10％-90％，具体可以是10％、50％、90％等等，此处不做具体限定。\n\n[0039]可以理解的是，本申请中的掩模板200的全透明区或者不透明区对应后续需要焊接材料所涂布的位置，也即是说阵列基板100中需要焊接材料的位置，则掩模板200对应的部分设置为全透明区或者不透明区，从而保证后续对焊接材料层的图案化。\n\n[0040]S230，对阵列基板进行曝光和显影处理，以形成图案化的光阻层。\n\n[0041]进一步，先将涂布光阻材料110的阵列基板100转入曝光机台进行曝光工艺，从而将掩模板200上的图案转移到光阻材料100上。\n\n[0042]接着，通过显影处理将掩模板200上的图案复制到光阻材料110上，从而形成图案化的光阻层110，所述光阻层110至少暴露部分阵列基板100。具体地，通过控制显影时间，使得不需要焊接材料部分被光阻层110覆盖，需要焊接材料部分的光阻层110被显影掉。\n\n[0043]S300，在图案化的光阻层和阵列基板上涂布焊接材料层。\n\n[0044]进一步，在图案化的光阻层110和阵列基板100上涂布焊接材料层120，本申请中采用的焊接材料可以为锡膏，当然在其他实施方式中还可以选用其他焊接材料，此处不做具体限定。\n\n[0045]S400，对焊接材料层进行显影处理以形成图案化的焊接材料层。\n\n[0046]进一步结合图2，紧接着对涂布焊接材料层120的阵列基板100进行第二次显影工艺以形成图案化的焊接材料层。具体地，将第一次显影处理时未完全显影掉的光阻层110以及覆盖所述未显影掉光阻层110上的焊接材料层一起显影处理，从而获得图案化的焊接材料层120。\n\n[0047]可以理解的是，本申请实施方式中采用光阻材料结合传统的光刻工艺，并基于特殊设计的掩模板制备图案化的光阻层，后期再涂布焊接材料层(锡膏)制备图案化的焊接材料层，取代传统钢网印刷制备图案化焊接材料层，可以获得精度更高的锡膏图案，且无需钢网可以多次重复制作，提高了工艺的可靠性。\n\n[0048]S500，在焊接材料层上制备微发光二极管以形成微发光二极管显示面板。\n\n[0049]结合图5，图5为本申请步骤S500一实施方式的流程示意图，如图5本申请步骤S500进一步包括如下子步骤：\n\n[0050]S510，将微发光二极管转运至图案化的焊接材料层上。\n\n[0051]进一步将微发光二极管130转运至所述焊接材料层120上，可以理解的是，本申请中微发光二极管的转运方法可以参照现有技术，此处不做具体限定。\n\n[0052]S520，对微发光二极管进行回流焊接处理。\n\n[0053]进一步，对微发光二极管进行回流焊接，以使得微发光二极管和PCB焊盘通过焊接材料层120(锡膏)可靠的结合在一起。具体地，可以采用气相回流焊、红外回流焊、远红外回流焊、红外加热风回流焊和全热风回流焊中的一种，此处不做具体限定。\n\n[0054]S530，对回流焊接处理完后的微发光二极管进行封装。\n\n[0055]具体地，在所述微发光二极管130上制备封装层140，其中，所述封装层140作用为保护微发光二极管130防止水汽入侵，且本申请中封装层140需要具备良好的耐热性、绝缘性和成膜稳定性，可采用的材料包括但不限于聚对二甲苯或有机树脂。可选地，本申请中封装层140可以采用旋涂工艺形成，且厚度可以在50nm-0.5mm之间。\n\n[0056]上述实施方式，通过采用光阻材料结合传统的光刻工艺制备图案化的光阻层，制备图案化的焊接材料层，取代传统钢网印刷制备图案化焊接材料层，制作的图案化的焊接材料层的精度更高，且无需钢网可以多次重复制作，提高了工艺的可靠性。\n\n[0057]请参阅图6，图6为本申请微发光二极管显示面板一实施方式的结构示意图，如图6，本申请提供微发光二极管显示面板包括阵列基板100、图案化的光阻层110、焊接材料层120、发光层(图未示)以及封装层140。\n\n[0058]其中，焊接材料层120形成于所述阵列基板100上未被所述光阻层110覆盖的区域。\n\n[0059]发光层包括多个形成于所述焊接材料层120上的微发光二极管130。\n\n[0060]封装层140覆盖所述光阻层110以及多个所述微发光二极管130，用于保护微发光二极管130防止水汽入侵。\n\n[0061]可以理解的是，上述微发光二极管显示面板的具体制备流程详见本申请微发光二极管制备方法的具体描述，此处不再赘述。\n\n[0062]请参阅图7，图7为本申请显示装置一实施方式的结构示意图，本申请提供的显示装置300包括微发光二极管显示面板F，且该微发光二极管显示面板F的具体结构和制作流程详见上述实施方式的具体描述，此处不再赘述。\n\n[0063]综上所述，本领域技术人员容易理解，本申请提供一种微发光二极管显示面板及其制备方法、显示装置，通过采用光阻材料结合传统的光刻工艺制备图案化的光阻层，制备图案化的焊接材料层，取代传统钢网印刷制备图案化焊接材料层，制作的图案化的焊接材料层的精度更高，且无需钢网可以多次重复制作，提高了工艺的可靠性。\n\n[0064]以上所述仅为本申请的实施方式，并非因此限制本申请的专利范围，凡是利用本申请说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本申请的专利保护范围内。', '技术领域\n\n[0001]本申请涉及显示技术领域，特别是涉及一种微发光二极管显示面板及其制备方法、显示装置。\n\n背景技术\n\n[0002]微型发光二极管(uLED)因其优越的显示性能、超长的寿命和低功耗等诸多优点，成为近年来显示技术研究的热点。\n\n[0003]现有技术中微型发光二极管显示屏的主要制作流程如下：首先进行TFT基板的制作，TFT基板的制作可以采用类似于TFT-LCD或AMOLED显示屏的制备工艺，TFT基板制备完成之后，在基板上制备芯片焊接材料，之后再将微型发光二极管芯片通过转移技术转移到像素指定位置，最后对芯片进行焊接、封装。在整个制备工艺过程中，通常以锡膏作为焊接材料，基于锡膏的芯片焊接，通常是将锡膏用钢网印刷的方式来获得预设的图案，且采用钢网印刷的方法起印刷质量较大程度受钢网制作质量及寿命的影响，随着印刷次数的增加，钢网的特性会发生变化，从而导致锡膏的图案化受影响。\n\n发明内容\n\n[0004]本申请提供一种微发光二极管显示面板及其制备方法、显示装置，能够解决现有技术中锡膏图案化受钢网制作质量、寿命以及特性影响的问题。\n\n[0005]为解决上述技术问题，本申请采用的一个技术方案是：提供一种微发光二极管显示面板的制备方法，所述制备方法包括：制备阵列基板；在所述阵列基板上制备图案化的光阻层，所述光阻层至少暴露部分所述阵列基板；在所述图案化的光阻层和所述阵列基板上涂布焊接材料层；对所述焊接材料层进行显影处理以形成图案化的焊接材料层；在所述焊接材料层上制备微发光二极管以形成所述微发光二极管显示面板。\n\n[0006]其中，所述在所述阵列基板上制备图案化的光阻层包括：在所述阵列基板上涂布光阻材料；提供一掩模板，并将所述掩模板和所述阵列基板对准；对所述阵列基板进行曝光和显影处理，以形成图案化的光阻层。\n\n[0007]其中，所述掩模板采用负性光阻或者正性光阻中的一种。\n\n[0008]其中，所述掩模板至少包括全透明区和半透明区。\n\n[0009]其中，所述掩模板至少包括不透明区和半透明区。\n\n[0010]其中，所述掩模板的所述半透明区的透光率范围为10％～90％。\n\n[0011]其中，所述在所述焊接材料层上制备微发光二极管以形成所述微发光二极管显示面板包括：将所述微发光二极管转运至所述图案化的焊接材料层上；对所述微发光二极管进行回流焊接处理；对回流焊接处理完后的所述微发光二极管进行封装。\n\n[0012]其中，所述焊接材料为锡膏。\n\n[0013]为解决上述技术问题，本申请采用的另一个技术方案是：提供一种基于上述任一所述制备方法制备的微发光二极管显示面板，所述显示面板包括：阵列基板；图案化的光阻层，形成于所述阵列基板上，且所述光阻层至少部分暴露所述阵列基板；焊接材料层，形成于所述阵列基板上未被所述光阻层覆盖的区域；发光层，包括多个形成于所述焊接材料层上的微发光二极管；封装层，覆盖所述光阻层以及多个所述微发光二极管。\n\n[0014]为解决上述技术问题，本申请采用的又一个技术方案是：提供一种显示装置，所述显示装置包括上述所述的微发光二极管显示面板。\n\n[0015]本申请的有益效果是：提供一种微发光二极管显示面板及其制备方法、显示装置，通过采用光阻材料结合传统的光刻工艺制备图案化的光阻层，制备图案化的焊接材料层，取代传统钢网印刷制备图案化焊接材料层，制作的图案化的焊接材料层的精度更高，且无需钢网可以多次重复制作，提高了工艺的可靠性。\n\n附图说明\n\n[0016]为了更清楚地说明本申请的方案，下面将对实施例描述中所需要使用的附图作一个简单介绍，显而易见地，下面描述中的附图是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0017]图1是本申请微发光二极管显示面板制备方法一实施方式的流程示意图；\n\n[0018]图2是本申请微发光二极管显示面板一实施方式的制备示意图；\n\n[0019]图3是本申请步骤S200一实施方式的流程示意图；\n\n[0020]图4是本申请掩模板一实施方式的结构示意图；\n\n[0021]图5是本申请步骤S500一实施方式的流程示意图；\n\n[0022]图6是本申请微发光二极管显示面板一实施方式的结构示意图；\n\n[0023]图7是本申请显示装置一实施方式的结构示意图。\n\n具体实施方式\n\n[0024]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本申请的一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0025]除非另有定义，本文所使用的所有的技术和科学术语与属于本申请技术领域的技术人员通常理解的含义相同；本文中在申请的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本申请；本申请的说明书和权利要求书及上述附图说明中的术语“包括”和“具有”以及它们的任何变形，意图在于覆盖不排他的包含。本申请的说明书和权利要求书或上述附图中的术语“第一”、“第二”等是用于区别不同对象，而不是用于描述特定顺序。\n\n[0026]在本文中提及“实施例”意味着，结合实施例描述的特定特征、结构或特性可以包含在本申请的至少一个实施例中。在说明书中的各个位置出现该短语并不一定均是指相同的实施例，也不是与其它实施例互斥的独立的或备选的实施例。本领域技术人员显式地和隐式地理解的是，本文所描述的实施例可以与其它实施例相结合。\n\n[0027]请参阅图1，图1为本申请微发光二极管显示面板制备方法一实施方式的流程示意图，如图所示本申请提供的微发光二极管显示面板制备方法包括如下步骤：\n\n[0028]S100，制备阵列基板。\n\n[0029]结合图2，图2为本申请微发光二极管显示面板一实施方式的制备示意图，如图2首先制备一阵列基板100，可选地，该阵列基板100至少可以包括衬底基板(图未示)，且还包括采用现有技术依次形成于衬底基板上栅极层(图未示)、绝缘层(图未示)、半导体层(图未示)以及像素电极(图未示)。在半导体层上设有源漏极(图未示)，其中所述漏极和所述像素电极连接。\n\n[0030]当然，本申请提供的阵列基板100还可以包括现有技术中的其他膜层结构，此处不做进一步描述。\n\n[0031]S200，在阵列基板上制备图案化的光阻层，光阻层至少暴露部分阵列基板。\n\n[0032]请进一步结合图3，图3为本申请步骤S200一实施方式的流程示意图，如图3，本申请步骤S200进一步包括如下子步骤：\n\n[0033]S210，在阵列基板上涂布光阻材料。\n\n[0034]进一步，在制备好的阵列基板100上涂布光阻材料110，可选地，本申请的光阻材料110可以为正性光阻材料或者负性光阻材料中的一种，此处不做具体限定。\n\n[0035]S220，提供一掩模板，并将掩模板和阵列基板对准。\n\n[0036]提供一掩模板200，为保证显示面板后续的正常工作需并将该掩模板200和阵列基板100精确对准，即确保掩模板200上图形的准确对准。\n\n[0037]可选地，结合图4，图4为本申请掩模板一实施方式的结构示意图。本申请选用的掩模板200的材料为正性光阻材料或者负性光阻材料中的一种。在本申请一具体应用场景中，掩模板200选用负性光阻材料，且该掩模板200至少包括阵列排布的全透明区210和半透明区220。其中，全透明区210的透光率为100％，半透明区220的透光率范围为10％-90％，具体可以是10％、50％、90％等等，此处不做具体限定。\n\n[0038]当然在本申请的另一实施方式中，掩模板200还可以选用正性光阻材料，且该掩模板200至少包括阵列排布的不透明区和半透明区，其中，半透明区的透光率范围和采用负性光阻材料层时一样为10％-90％，具体可以是10％、50％、90％等等，此处不做具体限定。\n\n[0039]可以理解的是，本申请中的掩模板200的全透明区或者不透明区对应后续需要焊接材料所涂布的位置，也即是说阵列基板100中需要焊接材料的位置，则掩模板200对应的部分设置为全透明区或者不透明区，从而保证后续对焊接材料层的图案化。\n\n[0040]S230，对阵列基板进行曝光和显影处理，以形成图案化的光阻层。\n\n[0041]进一步，先将涂布光阻材料110的阵列基板100转入曝光机台进行曝光工艺，从而将掩模板200上的图案转移到光阻材料100上。\n\n[0042]接着，通过显影处理将掩模板200上的图案复制到光阻材料110上，从而形成图案化的光阻层110，所述光阻层110至少暴露部分阵列基板100。具体地，通过控制显影时间，使得不需要焊接材料部分被光阻层110覆盖，需要焊接材料部分的光阻层110被显影掉。\n\n[0043]S300，在图案化的光阻层和阵列基板上涂布焊接材料层。\n\n[0044]进一步，在图案化的光阻层110和阵列基板100上涂布焊接材料层120，本申请中采用的焊接材料可以为锡膏，当然在其他实施方式中还可以选用其他焊接材料，此处不做具体限定。\n\n[0045]S400，对焊接材料层进行显影处理以形成图案化的焊接材料层。\n\n[0046]进一步结合图2，紧接着对涂布焊接材料层120的阵列基板100进行第二次显影工艺以形成图案化的焊接材料层。具体地，将第一次显影处理时未完全显影掉的光阻层110以及覆盖所述未显影掉光阻层110上的焊接材料层一起显影处理，从而获得图案化的焊接材料层120。\n\n[0047]可以理解的是，本申请实施方式中采用光阻材料结合传统的光刻工艺，并基于特殊设计的掩模板制备图案化的光阻层，后期再涂布焊接材料层(锡膏)制备图案化的焊接材料层，取代传统钢网印刷制备图案化焊接材料层，可以获得精度更高的锡膏图案，且无需钢网可以多次重复制作，提高了工艺的可靠性。\n\n[0048]S500，在焊接材料层上制备微发光二极管以形成微发光二极管显示面板。\n\n[0049]结合图5，图5为本申请步骤S500一实施方式的流程示意图，如图5本申请步骤S500进一步包括如下子步骤：\n\n[0050]S510，将微发光二极管转运至图案化的焊接材料层上。\n\n[0051]进一步将微发光二极管130转运至所述焊接材料层120上，可以理解的是，本申请中微发光二极管的转运方法可以参照现有技术，此处不做具体限定。\n\n[0052]S520，对微发光二极管进行回流焊接处理。\n\n[0053]进一步，对微发光二极管进行回流焊接，以使得微发光二极管和PCB焊盘通过焊接材料层120(锡膏)可靠的结合在一起。具体地，可以采用气相回流焊、红外回流焊、远红外回流焊、红外加热风回流焊和全热风回流焊中的一种，此处不做具体限定。\n\n[0054]S530，对回流焊接处理完后的微发光二极管进行封装。\n\n[0055]具体地，在所述微发光二极管130上制备封装层140，其中，所述封装层140作用为保护微发光二极管130防止水汽入侵，且本申请中封装层140需要具备良好的耐热性、绝缘性和成膜稳定性，可采用的材料包括但不限于聚对二甲苯或有机树脂。可选地，本申请中封装层140可以采用旋涂工艺形成，且厚度可以在50nm-0.5mm之间。\n\n[0056]上述实施方式，通过采用光阻材料结合传统的光刻工艺制备图案化的光阻层，制备图案化的焊接材料层，取代传统钢网印刷制备图案化焊接材料层，制作的图案化的焊接材料层的精度更高，且无需钢网可以多次重复制作，提高了工艺的可靠性。\n\n[0057]请参阅图6，图6为本申请微发光二极管显示面板一实施方式的结构示意图，如图6，本申请提供微发光二极管显示面板包括阵列基板100、图案化的光阻层110、焊接材料层120、发光层(图未示)以及封装层140。\n\n[0058]其中，焊接材料层120形成于所述阵列基板100上未被所述光阻层110覆盖的区域。\n\n[0059]发光层包括多个形成于所述焊接材料层120上的微发光二极管130。\n\n[0060]封装层140覆盖所述光阻层110以及多个所述微发光二极管130，用于保护微发光二极管130防止水汽入侵。\n\n[0061]可以理解的是，上述微发光二极管显示面板的具体制备流程详见本申请微发光二极管制备方法的具体描述，此处不再赘述。\n\n[0062]请参阅图7，图7为本申请显示装置一实施方式的结构示意图，本申请提供的显示装置300包括微发光二极管显示面板F，且该微发光二极管显示面板F的具体结构和制作流程详见上述实施方式的具体描述，此处不再赘述。\n\n[0063]综上所述，本领域技术人员容易理解，本申请提供一种微发光二极管显示面板及其制备方法、显示装置，通过采用光阻材料结合传统的光刻工艺制备图案化的光阻层，制备图案化的焊接材料层，取代传统钢网印刷制备图案化焊接材料层，制作的图案化的焊接材料层的精度更高，且无需钢网可以多次重复制作，提高了工艺的可靠性。\n\n[0064]以上所述仅为本申请的实施方式，并非因此限制本申请的专利范围，凡是利用本申请说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本申请的专利保护范围内。');
INSERT INTO `os_patent_instruction_text` VALUES (10736, 23790, '技术领域\n\n[0001]本申请涉及显示领域，尤其涉及一种Micro LED的转移方法及转移装置。\n\n背景技术\n\n[0002]Micro LED显示器由于具有可靠性高、色域高、亮度高、透明度高、PPI高，封装要求低，更容易实现柔性及无缝拼接等特性，是未来极具有发展潜力的显示技术。\n\n[0003]现有Micro LED的转移，通常需要制作图案化的模具或者图案化的转移头，模具的制作和图案化转移头的制作，使生产周期加长，制作成本增加，且不同尺寸的产品需要制作不同的模具或不同的图案化转移头，使生产的灵活性降低。如何使micro LED转移过程中省去图案化模具或图案化转移头是目前实现大面积快速转移的方向之一。\n\n[0004]因此，现有Micro LED的转移存在缺陷，需要改进。\n\n发明内容\n\n[0005]本发明提供一种Micro LED的转移方法及转移装置，以改进现有Micro LED转移存在的缺陷。\n\n[0006]为解决以上问题，本发明提供的技术方案如下：\n\n[0007]本发明提供一种Micro LED的转移方法，其包括：\n\n[0008]第一临时基板与位于衬底基板上的Micro LED的第一表面进行贴合；\n\n[0009]剥离所述衬底基板；\n\n[0010]拉伸基板与所述Micro LED的第二表面进行贴合；\n\n[0011]剥离所述第一临时基板；\n\n[0012]将所述拉伸基板进行横向和纵向拉伸，使相邻所述Micro LED之间的距离达到预定的目标值；\n\n[0013]第二临时基板与所述Micro LED的第一表面进行贴合；\n\n[0014]剥离所述拉伸基板；\n\n[0015]转移基板与所述Micro LED的第二表面进行贴合；\n\n[0016]剥离所述第二临时基板；\n\n[0017]所述转移基板带动所述Micro LED与阵列基板键合；\n\n[0018]剥离所述转移基板。\n\n[0019]在本发明提供的转移方法中，所述将所述拉伸基板进行横向和纵向拉伸，使相邻所述Micro LED之间的距离达到预定的目标值的具体步骤包括：\n\n[0020]将所述拉伸基板进行横向均匀拉伸，并检测相邻所述Micro LED之间的横向距离；\n\n[0021]将所述拉伸基板进行纵向均匀拉伸，并检测相邻所述Micro LED之间的纵向距离。\n\n[0022]在本发明提供的转移方法中，所述将所述拉伸基板进行横向均匀拉伸，并检测相邻所述Micro LED之间的横向距离的具体步骤包括：\n\n[0023]对所述拉伸基板横向方向上的两对边，分别施加背离基板中心的均匀外力；\n\n[0024]通过自动光学检测器对相邻所述Micro LED之间的横向距离进行检测；\n\n[0025]当相邻所述micro LED的横向距离未达到目标值时，继续将所述拉伸基板进行横向均匀拉伸；\n\n[0026]当相邻所述micro LED的间距达到目标值时，停止拉伸。\n\n[0027]在本发明提供的转移方法中，所述将所述拉伸基板进行纵向均匀拉伸，并检测相邻所述Micro LED之间的纵向距离的具体步骤包括：\n\n[0028]对所述拉伸基板纵向方向上的两对边，分别施加背离基板中心的均匀外力；\n\n[0029]通过自动光学检测器对相邻所述Micro LED之间的纵向距离进行检测；\n\n[0030]当相邻所述micro LED的纵向距离未达到目标值时，继续将所述拉伸基板进行纵向均匀拉伸；\n\n[0031]当相邻所述micro LED的纵向距离达到目标值时，停止拉伸。\n\n[0032]在本发明提供的转移方法中，所述将所述拉伸基板进行横向和纵向拉伸，使相邻所述Micro LED之间的距离达到预定的目标值的具体步骤还包括：\n\n[0033]在拉伸的过程中对所述拉伸基板进行加热。\n\n[0034]在本发明提供的转移方法中，所述转移基板带动所述Micro LED与阵列基板键合的具体步骤包括：\n\n[0035]所述转移基板带动间距排列成目标值的所述Micro LED与阵列基板进行对准；\n\n[0036]将所述Micro LED与所述阵列基板进行键合；\n\n[0037]通过激光剥离技术，将所述转移基板剥离掉。\n\n[0038]同时，本发明提供一种Micro LED的转移装置，其包括：\n\n[0039]第一临时基板，用于临时承载所述Micro LED；\n\n[0040]基板剥离构件，用于对粘结所述Micro LED的基板进行剥离；\n\n[0041]拉伸基板，用于承载所述Micro LED，所述拉伸基板可以进行横向和纵向拉伸；\n\n[0042]拉伸构件，包括横向夹持拉伸部件和纵向夹持拉伸部件，所述横向夹持拉伸部件用于夹持所述拉伸基板横向方向上的两对边，并对所述对边施加背离基板中心的均匀外力，所述纵向夹持拉伸部件用于夹持所述拉伸基板纵向方向上的两对边，并对所述对边施加背离基板中心的均匀外力；\n\n[0043]第二临时基板，用于临时承载所述Micro LED；\n\n[0044]转移基板，用于将所述Micro LED转移至所述阵列基板。\n\n[0045]在本发明提供的转移装置中，所述拉伸基板的材料为具有拉伸性能的聚合物材料。\n\n[0046]在本发明提供的转移装置中，所述拉伸构件还包括加热部件，用于在拉伸过程中对所述拉伸基板进行加热。\n\n[0047]在本发明提供的转移装置中，所述拉伸构件还包括距离检测部件，用于在拉伸过程中对相邻所述Micro LED之间的距离进行检测。\n\n[0048]本发明提供了一种Micro LED的转移方法及转移装置，该方法包括：第一临时基板与位于衬底基板上的Micro LED的第一表面进行贴合；剥离衬底基板；拉伸基板与MicroLED的第二表面进行贴合；剥离第一临时基板；将拉伸基板进行横向和纵向拉伸，使相邻Micro LED之间的距离达到预定的目标值；第二临时基板与Micro LED的第一表面进行贴合；剥离拉伸基板；转移基板与Micro LED的第二表面进行贴合；剥离第二临时基板；转移基板带动Micro LED与阵列基板键合；剥离转移基板。该方法通过将衬底基板上阵列设置的Micro LED转移至拉伸基板，然后通过对拉伸基板做横向和纵向均匀拉伸，使得相邻MicroLED之间的横向和纵向距离均达到预定的目标值，最后再将间距排列成目标值的Micro LED与阵列基板进行键合，从而完成Micro LED的转移过程。该方法无需制作图案化的模具或者图案化的转移头，生产周期缩短，制作成本降低；同时，采用拉伸基板拉伸来实现Micro LED的目标间距，可以满足不同Micro LED间距设计的需要，生产的灵活性更高。有效改进了现有Micro LED的转移方法。\n\n附图说明\n\n[0049]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0050]图1为本发明实施例提供的Micro LED的转移方法的流程示意图。\n\n[0051]图2(a)至图2(k)为本发明实施例提供的Micro LED的转移方法的第一种结构示意图。\n\n[0052]图3(a)至图3(c)为本发明实施例提供的Micro LED的转移方法的第二种结构示意图。\n\n[0053]图4为本发明实施例提供的Micro LED的转移装置的结构框图。\n\n具体实施方式\n\n[0054]下面将结合本发明的具体实施方案，对本发明实施方案和/或实施例中的技术方案进行清楚、完整的描述，显而易见的，下面所描述的实施方案和/或实施例仅仅是本发明一部分实施方案和/或实施例，而不是全部的实施方案和/或实施例。基于本发明中的实施方案和/或实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施方案和/或实施例，都属于本发明保护范围。\n\n[0055]本发明所提到的方向用语，例如[上]、[下]、[左]、[右]、[前]、[后]、[内]、[外]、[侧]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明和理解本发明，而非用以限制本发明。术语“第一”、“第二”等仅用于描述目的，而不能理解为指示或是暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”等的特征可以明示或者隐含地包括一个或者更多个该特征。\n\n[0056]针对Micro LED的转移存在缺陷的问题，本发明提供Micro LED的转移方法和转移装置可以缓解这个问题。\n\n[0057]在一种实施例中，如图1所示，本发明提供的Micro LED的转移方法包括：\n\n[0058]S101、第一临时基板与位于衬底基板上的Micro LED的第一表面进行贴合；\n\n[0059]S102、剥离衬底基板；\n\n[0060]S103、拉伸基板与Micro LED的第二表面进行贴合；\n\n[0061]S104、剥离第一临时基板；\n\n[0062]S105、将拉伸基板进行横向和纵向拉伸，使相邻Micro LED之间的距离达到预定的目标值；\n\n[0063]S106、第二临时基板与Micro LED的第一表面进行贴合；\n\n[0064]S107、剥离拉伸基板；\n\n[0065]S108、转移基板与Micro LED的第二表面进行贴合；\n\n[0066]S109、剥离第二临时基板；\n\n[0067]S110、转移基板带动Micro LED与阵列基板键合；\n\n[0068]S111、剥离转移基板。\n\n[0069]本实施例提供一种Micro LED的转移方法，该方法通过将衬底基板上阵列设置的Micro LED转移至拉伸基板，然后通过对拉伸基板做横向和纵向均匀拉伸，使得相邻MicroLED之间的横向和纵向距离均达到预定的目标值，最后再将间距排列成目标值的Micro LED与阵列基板进行键合，从而完成Micro LED的转移过程。该方法无需制作图案化的模具或者图案化的转移头，生产周期缩短，制作成本降低；同时，采用拉伸基板拉伸来实现Micro LED的目标间距，可以满足不同Micro LED间距设计的需要，生产的灵活性更高。有效改进了现有Micro LED的转移方法。\n\n[0070]下面将结合图2(a)至图3(c)，对本发明提供的Micro LED的转移方法做进一步详细介绍。其中图2(a)至图2(k)为本发明实施例提供的Micro LED的转移示意图，图3(a)至图3(c)为本发明实施例提供的步骤S105的分解示意图。\n\n[0071]在一种实施例中，请参照图2(a)，S101第一临时基板与位于衬底基板上的MicroLED的第一表面进行贴合，具体为将第一临时基板设置有黏胶层的一面，与Micro LED的第一表面进行贴合。\n\n[0072]Micro LED形成于衬底基板上，其中绿色Micro LED和蓝色Micro LED形成于蓝宝石衬底基板上，红色Micro LED形成于的砷化镓(GaAs)衬底基板上。Micro LED阵列排布在衬底基板上，Micro LED包括在衬底基板上依次形成的氮化镓(GaN)外延层、N型GaN层(GaN:Si)、多量子阱(MQW)层(多层交叠的InGaN/GaN组成)、P型GaN层(GaN:Mg)、绝缘层(SiO2)、电流扩散层(Ni/Au、ITO、石墨烯等)、保护层(SiO2)、N型和P型电极层(Cr/Pt/Au，Pt/Au，Ni/Au等)。\n\n[0073]Micro LED包括第一表面和第二表面，记远离衬底基板的表面为第一表面，第一表面为电极表面，与衬底基板接触的表面为第二表面。由于第一临时基板与Micro LED的第一表面贴合，第一临时基板与Micro LED的第一表面贴合的一侧设置有胶黏层，用于将MicroLED固定在第一临时基板上，避免在Micro LED在转运过程中的移动，同时平坦化并保护Micro LED的第一表面，防止Micro LED和第一临时基板的相互碰撞导致Micro LED电极表面的损坏。\n\n[0074]在一种实施例中，请参照图2(b)，S102剥离衬底基板的具体步骤包括：\n\n[0075]通过激光剥离技术，将蓝宝衬底基板剥离掉。具体的，半导体激光器发出激光光束，照射到蓝宝衬底基板，当激光光束照射到蓝宝衬底基板与Micro LED的粘合胶层时，粘合胶层温度升高，发生激光烧蚀反应，失去粘性，从而实现蓝宝石衬底的剥离。\n\n[0076]通过化学剥离方式，将GaAs衬底基板剥离掉。具体的，采用的化学药剂，如NH4OH和H2O2，对GaAs衬底基板进行选择性腐蚀，通过化学反应将GaAs衬底基板去除掉，从而达到剥离GaAs衬底基板的目的。\n\n[0077]在一种实施例中，请参照图2(c)，S103拉伸基板与Micro LED的第二表面进行贴合的具体步骤包括：在拉伸基板与Micro LED的第二表面接触的一侧涂覆一层粘合胶；将拉伸基板与Micro LED的第二表面贴合；加温固化粘合胶，使拉伸基板与Micro LED的第二表面粘结在一起。\n\n[0078]其中，拉伸基板的材料为具有拉伸性能的聚合物材料。包括PDMS(聚二甲基硅氧烷)，PET(聚对苯二甲酸乙二醇酯)，PC(聚碳酸酯)，PEN(聚萘二甲酸乙二醇酯)等。\n\n[0079]在一种实施例中，请参照图2(d)，S104剥离第一临时基板的具体步骤为通过激光剥离技术，将第一临时基板剥离掉。\n\n[0080]具体的，半导体激光器发出激光光束，照射到第一临时基板的胶黏层，当激光光束照射到胶黏层时，胶黏层的温度升高，胶黏层受热膨胀拱起，使Micro-LED与胶黏层之间的接触面积变小，在重力作用下，Micro-LED脱离第一临时基板，从而将蓝宝石衬底剥离掉。第一临时基板的材料为激光透明材料，激光透明材料有助于激光光束穿过第一临时基板，照射到胶黏层，把更多的热量传递到胶黏层。\n\n[0081]在一种实施例中，请参照图2(e)，S105将拉伸基板进行横向和纵向拉伸，使相邻Micro LED之间的距离达到预定的目标值的具体步骤包括：\n\n[0082]将拉伸基板进行横向均匀拉伸，并检测相邻Micro LED之间的横向距离。如图3(a)和图3(b)所示，图3(a)为将拉伸基板进行横向均匀拉伸的正视图，图3(b)为将拉伸基板进行横向均匀拉伸的俯视图。具体的，对拉伸基板横向方向上的两对边，分别施加背离基板中心的均匀外力F1；同时，通过自动光学检测器对相邻Micro LED之间的横向距离D1进行检测；当相邻micro LED的横向距离D1未达到预定的横向目标值时，继续将拉伸基板进行横向均匀拉伸；当相邻micro LED的间距D1达到预定的横向目标值时，停止拉伸。这里所说的预定的横向目标值，是后续制程中使用的阵列基板上各子像素驱动电路在横向方向上的间隔值。\n\n[0083]将拉伸基板进行纵向均匀拉伸，并检测相邻Micro LED之间的纵向距离。如图3(c)所示，图3(c)为将拉伸基板进行纵向均匀拉伸的俯视图。具体的，对拉伸基板纵向方向上的两对边，分别施加背离基板中心的均匀外力F2；同时，通过自动光学检测器对相邻MicroLED之间的横向距离D2进行检测；当相邻micro LED的横向距离D2未达到预定的纵向目标值时，继续将拉伸基板进行横向均匀拉伸；当相邻micro LED的间距D2达到预定的纵向目标值时，停止拉伸。这里所说的预定的纵向目标值，是后续制程中使用的阵列基板上各子像素驱动电路在纵向方向上的间隔值。\n\n[0084]至此，完成了对拉伸基板横向和纵向方向上的拉伸，通过对拉伸基板的拉伸，带动位于拉伸基板上Micro LED发生空间平移，使得相邻Micro LED横向和纵向之间的距离分别达到预定的目标值，为后续Micro LED与阵列基板的键合提供了基础；且这种Micro LED排列间距的设置方式，可以满足横向和纵向方向上，间距的任意预定目标值，生产的灵活性高；同时，在Micro LED距离重设的过程中，无需使用图案化的磨具或转移头，缩短了生产周期，减低了生产成本。\n\n[0085]在对拉伸基板的横向和纵向拉伸过程中，还可以对拉伸基板进行一定程度的加热，使得拉伸基板的拉伸过程更加容易，拉伸基板拉伸的更加均匀。由于拉伸基板的材料为具有拉伸性能的聚合物，一般聚合物材料均具有受热变软柔化的特性，在对拉伸基板进行拉伸时，对拉伸基板进行一定温度的加热，使得拉伸基板的柔软流动性增加，硬度降低，能够减小拉伸所用的力，同时能够避免拉伸过程中对拉伸基板的损坏，有助于拉伸过程的顺利进行。\n\n[0086]在另一种实施例中，在对拉伸基板进行横向(或纵向)拉伸时，对整个拉伸基板进行均匀加热。对整个拉伸基板均匀加热，使得整个拉伸基板各个部位都能软化，在对基板的两个对边施加均匀外力的情况下，有助于整个基板的拉伸。\n\n[0087]在另一种实施例中，在对拉伸基板进行横向(或纵向)拉伸时，对拉伸基板进行在横向(或纵向)方向上，由拉伸基板中间到拉伸基板两边，加热热量递减的方式进行加热。由于拉伸基板在横向(或纵向)方向上存在一定的尺寸，因此对拉伸基板在横向(或纵向)方向上的两个对边施加外力时，越靠近基板中间位置，越难拉伸变形；对拉伸基板进行在横向(或纵向)方向上，由拉伸基板中间到拉伸基板两边，加热热量递减的方式进行加热，使得拉伸基板的软度，在横向(或纵向)方向上，由拉伸基板两边到拉伸基板中间递增，从而弥补了从拉伸基板两边到拉伸基板中间拉伸难度递增的问题，有助于整个拉伸基板的均匀拉伸。\n\n[0088]本实施例中，对拉伸基板的加热方式可以是风热加热，可以是光照加热，还可以是其他加热方式，在此不做限定。\n\n[0089]在一种实施例中，请参照图2(f)，S106第二临时基板与Micro LED的第一表面进行贴合，具体为将第二临时基板设置有黏胶层的一面，与间距排列成目标值的Micro LED的第一表面粘结在一起。其具体原理，与S101将第一临时基板设置有黏胶层的一面，与MicroLED的第一表面进行贴合相同，可参照上述实施例，在此不再赘述。\n\n[0090]在一种实施例中，请参照图2(g)，S107剥离拉伸基板的具体步骤为通过激光剥离技术，将拉伸基板剥离掉。其具体原理，与通过激光剥离技术，将蓝宝衬底基板剥离掉相同，可参照上述实施例，在此不再赘述。\n\n[0091]在一种实施例中，请参照图2(h)，S108转移基板与Micro LED的第二表面进行贴合的具体步骤包括：在转移基板与Micro LED的第二表面接触的一侧涂覆一层粘合胶；将转移基板与间距排列成目标值的Micro LED的第二表面贴合；加温固化粘合胶，使拉伸基板与间距排列成目标值的Micro LED的第二表面粘结在一起。\n\n[0092]在一种实施例中，请参照图2(i)，S109剥离第二临时基板的具体步骤包括：通过激光剥离技术，将第二临时基板剥离掉。其具体剥离原理，与通过激光剥离技术，将蓝宝衬底基板剥离掉相同，可参照上述实施例，在此不再赘述。\n\n[0093]在一种实施例中，请参照图2(j)，S110转移基板带动Micro LED与阵列基板键合的具体步骤包括：\n\n[0094]转移基板带动间距排列成目标值的Micro LED与阵列基板进行对准。具体的，移动转移基板，使得位于转移基板上的各个Micro LED与阵列基板的各子像素驱动电路一一对齐，Micro LED的第一表面与阵列基板的驱动电路层相向对准。\n\n[0095]将Micro LED的第一表面与阵列基板进行键合。具体键合方式可以采用热超声键合、热压键合或其它键合方式，在此不做限定。\n\n[0096]在一种实施例中，请参照图2(k)，S111剥离转移基板的具体步骤包括：通过激光剥离技术，将转移基板剥离掉。其具体剥离原理，与通过激光剥离技术，将蓝宝衬底基板剥离掉相同，可参照上述实施例，在此不再赘述。\n\n[0097]同时，本发明提供一种Micro LED的转移装置，如图4所示，图4为本发明实施例提供的Micro LED的转移装置的结构框图，该转移装置包括：\n\n[0098]第一临时基板410，用于临时承载Micro LED。\n\n[0099]基板剥离构件420，用于对粘结Micro LED的基板进行剥离。\n\n[0100]拉伸基板430，用于承载Micro LED，拉伸基板430可以进行横向和纵向拉伸。\n\n[0101]拉伸构件440，包括横向夹持拉伸部件和纵向夹持拉伸部件，横向夹持拉伸部件用于夹持拉伸基板横向方向上的两对边，并对所述对边施加背离基板中心的均匀外力；纵向夹持拉伸部件用于夹持拉伸基板纵向方向上的两对边，并对所述对边施加背离基板中心的均匀外力。\n\n[0102]第二临时基板450，用于临时承载Micro LED。\n\n[0103]转移基板460，用于将Micro LED转移至阵列基板。\n\n[0104]本实施例提供一种Micro LED的转移装置，该装置通过第一临时基板将位于衬底基板生的Micro LED转移至拉伸基板，然后通过拉伸构件对拉伸基板进行横向和纵向拉伸，通过拉伸基板的拉伸作用，带动Micro LED发生空间平移，使Micro LED横向间距和纵向间距都达到预定的目标值，随后再通过第二临时基板和转移基板将间距排列成目标值的Micro LED转移至阵列基板，最后间距排列成目标值的Micro LED与至阵列基板键合，从而完成Micro LED的转移过程；该转移装置不包括图案化的模具或者图案化的转移头，制作成本降低，生产周期缩短；同时，拉伸构件对拉伸基板的拉伸作用可控，可以满足对Micro LED任意目标间距的拉伸，生产的灵活性更高。有效改进了现有Micro LED的转移。\n\n[0105]在一种实施例中，拉伸基板430的材料为具有拉伸性能的聚合物材料，如PDMS(聚二甲基硅氧烷)，PET(聚对苯二甲酸乙二醇酯)，PC(聚碳酸酯)，PEN(聚萘二甲酸乙二醇酯)等。\n\n[0106]在一种实施例中，横向夹持拉伸部件包括相对设置的两个横向基板夹和横向基板驱动器；该横向基板夹包括上夹板和下夹板，上夹板和下夹板的长度相同，长于拉伸基板的纵向长度；横向基板驱动器用于驱动两个横向基板夹向背离拉伸基板的方向做匀速运动。纵向夹持拉伸部件包括相对设置的两个纵向基板夹和纵向基板驱动器，纵向基板夹也包括上夹板和下夹板，上夹板的长度和下夹板的长度相同，长于拉伸基板横向拉伸后的横向长度；纵向基板驱动器用于驱动两个纵向基板夹向背离拉伸基板的方向做匀速运动。\n\n[0107]在一种实施例中，拉伸构件440还包括距离检测部件，用于在拉伸基板的拉伸过程中，对相邻Micro LED之间的距离进行检测。当检测到相邻Micro LED之间的横向(纵向)距离未达到目标值时，继续驱动拉伸构件对拉伸基板进行横向(纵向)均匀拉伸；当检测到相邻Micro LED之间的横向(纵向)距离达到目标值时，停止拉伸。距离检测部件为自动光学检测器。\n\n[0108]在一种实施例中，拉伸构件440还包括加热部件，用于在拉伸过程中对拉伸基板进行加热。该加热构件可以是均匀加热式的，也可以是可调加热式的，如对拉伸基板进行由基板中间位置向拉伸两边热量递减的加热方式。加热部件可以是热风机、光照机或其他加热器件。\n\n[0109]在一种实施例中，第一临时基板410和第二临时基板450均包括胶黏层，胶黏层用于与所述Micro LED的电极表面进行贴合，固定Micro LED，避免在Micro LED在转运过程中的移动，同时平坦化并保护Micro LED的第一表面，防止Micro LED和第一临时基板的相互碰撞导致Micro LED电极表面的损坏。\n\n[0110]在一种实施例中，基板剥离构件420包括激光剥离部件和化学剥离部件，激光剥离部件用于将蓝宝石衬底基板、第一临时基板、拉伸基板、以及第二临时基板与Micro LED剥离开，化学剥离部件用于将GaAs衬底基板与Micro LED剥离开。\n\n[0111]根据上述实施例可知：\n\n[0112]本发明实施例提供了一种Micro LED的转移方法及转移装置，该方法包括：第一临时基板与位于衬底基板上的Micro LED的第一表面进行贴合；剥离衬底基板；拉伸基板与Micro LED的第二表面进行贴合；剥离第一临时基板；将拉伸基板进行横向和纵向拉伸，使相邻Micro LED之间的距离达到预定的目标值；第二临时基板与Micro LED的第一表面进行贴合；剥离拉伸基板；转移基板与Micro LED的第二表面进行贴合；剥离第二临时基板；转移基板带动Micro LED与阵列基板键合；剥离转移基板。该方法通过将衬底基板上阵列设置的Micro LED转移至拉伸基板，然后通过对拉伸基板做横向和纵向均匀拉伸，使得相邻MicroLED之间的横向和纵向距离均达到预定的目标值，最后再将间距排列成目标值的Micro LED与阵列基板进行键合，从而完成Micro LED的转移过程。该方法无需制作图案化的模具或者图案化的转移头，生产周期缩短，制作成本降低；同时，采用拉伸基板拉伸来实现Micro LED的目标间距，可以满足不同Micro LED间距设计的需要，生产的灵活性更高。有效改进了现有Micro LED的转移方法。\n\n[0113]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本申请涉及显示领域，尤其涉及一种Micro LED的转移方法及转移装置。\n\n背景技术\n\n[0002]Micro LED显示器由于具有可靠性高、色域高、亮度高、透明度高、PPI高，封装要求低，更容易实现柔性及无缝拼接等特性，是未来极具有发展潜力的显示技术。\n\n[0003]现有Micro LED的转移，通常需要制作图案化的模具或者图案化的转移头，模具的制作和图案化转移头的制作，使生产周期加长，制作成本增加，且不同尺寸的产品需要制作不同的模具或不同的图案化转移头，使生产的灵活性降低。如何使micro LED转移过程中省去图案化模具或图案化转移头是目前实现大面积快速转移的方向之一。\n\n[0004]因此，现有Micro LED的转移存在缺陷，需要改进。\n\n发明内容\n\n[0005]本发明提供一种Micro LED的转移方法及转移装置，以改进现有Micro LED转移存在的缺陷。\n\n[0006]为解决以上问题，本发明提供的技术方案如下：\n\n[0007]本发明提供一种Micro LED的转移方法，其包括：\n\n[0008]第一临时基板与位于衬底基板上的Micro LED的第一表面进行贴合；\n\n[0009]剥离所述衬底基板；\n\n[0010]拉伸基板与所述Micro LED的第二表面进行贴合；\n\n[0011]剥离所述第一临时基板；\n\n[0012]将所述拉伸基板进行横向和纵向拉伸，使相邻所述Micro LED之间的距离达到预定的目标值；\n\n[0013]第二临时基板与所述Micro LED的第一表面进行贴合；\n\n[0014]剥离所述拉伸基板；\n\n[0015]转移基板与所述Micro LED的第二表面进行贴合；\n\n[0016]剥离所述第二临时基板；\n\n[0017]所述转移基板带动所述Micro LED与阵列基板键合；\n\n[0018]剥离所述转移基板。\n\n[0019]在本发明提供的转移方法中，所述将所述拉伸基板进行横向和纵向拉伸，使相邻所述Micro LED之间的距离达到预定的目标值的具体步骤包括：\n\n[0020]将所述拉伸基板进行横向均匀拉伸，并检测相邻所述Micro LED之间的横向距离；\n\n[0021]将所述拉伸基板进行纵向均匀拉伸，并检测相邻所述Micro LED之间的纵向距离。\n\n[0022]在本发明提供的转移方法中，所述将所述拉伸基板进行横向均匀拉伸，并检测相邻所述Micro LED之间的横向距离的具体步骤包括：\n\n[0023]对所述拉伸基板横向方向上的两对边，分别施加背离基板中心的均匀外力；\n\n[0024]通过自动光学检测器对相邻所述Micro LED之间的横向距离进行检测；\n\n[0025]当相邻所述micro LED的横向距离未达到目标值时，继续将所述拉伸基板进行横向均匀拉伸；\n\n[0026]当相邻所述micro LED的间距达到目标值时，停止拉伸。\n\n[0027]在本发明提供的转移方法中，所述将所述拉伸基板进行纵向均匀拉伸，并检测相邻所述Micro LED之间的纵向距离的具体步骤包括：\n\n[0028]对所述拉伸基板纵向方向上的两对边，分别施加背离基板中心的均匀外力；\n\n[0029]通过自动光学检测器对相邻所述Micro LED之间的纵向距离进行检测；\n\n[0030]当相邻所述micro LED的纵向距离未达到目标值时，继续将所述拉伸基板进行纵向均匀拉伸；\n\n[0031]当相邻所述micro LED的纵向距离达到目标值时，停止拉伸。\n\n[0032]在本发明提供的转移方法中，所述将所述拉伸基板进行横向和纵向拉伸，使相邻所述Micro LED之间的距离达到预定的目标值的具体步骤还包括：\n\n[0033]在拉伸的过程中对所述拉伸基板进行加热。\n\n[0034]在本发明提供的转移方法中，所述转移基板带动所述Micro LED与阵列基板键合的具体步骤包括：\n\n[0035]所述转移基板带动间距排列成目标值的所述Micro LED与阵列基板进行对准；\n\n[0036]将所述Micro LED与所述阵列基板进行键合；\n\n[0037]通过激光剥离技术，将所述转移基板剥离掉。\n\n[0038]同时，本发明提供一种Micro LED的转移装置，其包括：\n\n[0039]第一临时基板，用于临时承载所述Micro LED；\n\n[0040]基板剥离构件，用于对粘结所述Micro LED的基板进行剥离；\n\n[0041]拉伸基板，用于承载所述Micro LED，所述拉伸基板可以进行横向和纵向拉伸；\n\n[0042]拉伸构件，包括横向夹持拉伸部件和纵向夹持拉伸部件，所述横向夹持拉伸部件用于夹持所述拉伸基板横向方向上的两对边，并对所述对边施加背离基板中心的均匀外力，所述纵向夹持拉伸部件用于夹持所述拉伸基板纵向方向上的两对边，并对所述对边施加背离基板中心的均匀外力；\n\n[0043]第二临时基板，用于临时承载所述Micro LED；\n\n[0044]转移基板，用于将所述Micro LED转移至所述阵列基板。\n\n[0045]在本发明提供的转移装置中，所述拉伸基板的材料为具有拉伸性能的聚合物材料。\n\n[0046]在本发明提供的转移装置中，所述拉伸构件还包括加热部件，用于在拉伸过程中对所述拉伸基板进行加热。\n\n[0047]在本发明提供的转移装置中，所述拉伸构件还包括距离检测部件，用于在拉伸过程中对相邻所述Micro LED之间的距离进行检测。\n\n[0048]本发明提供了一种Micro LED的转移方法及转移装置，该方法包括：第一临时基板与位于衬底基板上的Micro LED的第一表面进行贴合；剥离衬底基板；拉伸基板与MicroLED的第二表面进行贴合；剥离第一临时基板；将拉伸基板进行横向和纵向拉伸，使相邻Micro LED之间的距离达到预定的目标值；第二临时基板与Micro LED的第一表面进行贴合；剥离拉伸基板；转移基板与Micro LED的第二表面进行贴合；剥离第二临时基板；转移基板带动Micro LED与阵列基板键合；剥离转移基板。该方法通过将衬底基板上阵列设置的Micro LED转移至拉伸基板，然后通过对拉伸基板做横向和纵向均匀拉伸，使得相邻MicroLED之间的横向和纵向距离均达到预定的目标值，最后再将间距排列成目标值的Micro LED与阵列基板进行键合，从而完成Micro LED的转移过程。该方法无需制作图案化的模具或者图案化的转移头，生产周期缩短，制作成本降低；同时，采用拉伸基板拉伸来实现Micro LED的目标间距，可以满足不同Micro LED间距设计的需要，生产的灵活性更高。有效改进了现有Micro LED的转移方法。\n\n附图说明\n\n[0049]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0050]图1为本发明实施例提供的Micro LED的转移方法的流程示意图。\n\n[0051]图2(a)至图2(k)为本发明实施例提供的Micro LED的转移方法的第一种结构示意图。\n\n[0052]图3(a)至图3(c)为本发明实施例提供的Micro LED的转移方法的第二种结构示意图。\n\n[0053]图4为本发明实施例提供的Micro LED的转移装置的结构框图。\n\n具体实施方式\n\n[0054]下面将结合本发明的具体实施方案，对本发明实施方案和/或实施例中的技术方案进行清楚、完整的描述，显而易见的，下面所描述的实施方案和/或实施例仅仅是本发明一部分实施方案和/或实施例，而不是全部的实施方案和/或实施例。基于本发明中的实施方案和/或实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施方案和/或实施例，都属于本发明保护范围。\n\n[0055]本发明所提到的方向用语，例如[上]、[下]、[左]、[右]、[前]、[后]、[内]、[外]、[侧]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明和理解本发明，而非用以限制本发明。术语“第一”、“第二”等仅用于描述目的，而不能理解为指示或是暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”等的特征可以明示或者隐含地包括一个或者更多个该特征。\n\n[0056]针对Micro LED的转移存在缺陷的问题，本发明提供Micro LED的转移方法和转移装置可以缓解这个问题。\n\n[0057]在一种实施例中，如图1所示，本发明提供的Micro LED的转移方法包括：\n\n[0058]S101、第一临时基板与位于衬底基板上的Micro LED的第一表面进行贴合；\n\n[0059]S102、剥离衬底基板；\n\n[0060]S103、拉伸基板与Micro LED的第二表面进行贴合；\n\n[0061]S104、剥离第一临时基板；\n\n[0062]S105、将拉伸基板进行横向和纵向拉伸，使相邻Micro LED之间的距离达到预定的目标值；\n\n[0063]S106、第二临时基板与Micro LED的第一表面进行贴合；\n\n[0064]S107、剥离拉伸基板；\n\n[0065]S108、转移基板与Micro LED的第二表面进行贴合；\n\n[0066]S109、剥离第二临时基板；\n\n[0067]S110、转移基板带动Micro LED与阵列基板键合；\n\n[0068]S111、剥离转移基板。\n\n[0069]本实施例提供一种Micro LED的转移方法，该方法通过将衬底基板上阵列设置的Micro LED转移至拉伸基板，然后通过对拉伸基板做横向和纵向均匀拉伸，使得相邻MicroLED之间的横向和纵向距离均达到预定的目标值，最后再将间距排列成目标值的Micro LED与阵列基板进行键合，从而完成Micro LED的转移过程。该方法无需制作图案化的模具或者图案化的转移头，生产周期缩短，制作成本降低；同时，采用拉伸基板拉伸来实现Micro LED的目标间距，可以满足不同Micro LED间距设计的需要，生产的灵活性更高。有效改进了现有Micro LED的转移方法。\n\n[0070]下面将结合图2(a)至图3(c)，对本发明提供的Micro LED的转移方法做进一步详细介绍。其中图2(a)至图2(k)为本发明实施例提供的Micro LED的转移示意图，图3(a)至图3(c)为本发明实施例提供的步骤S105的分解示意图。\n\n[0071]在一种实施例中，请参照图2(a)，S101第一临时基板与位于衬底基板上的MicroLED的第一表面进行贴合，具体为将第一临时基板设置有黏胶层的一面，与Micro LED的第一表面进行贴合。\n\n[0072]Micro LED形成于衬底基板上，其中绿色Micro LED和蓝色Micro LED形成于蓝宝石衬底基板上，红色Micro LED形成于的砷化镓(GaAs)衬底基板上。Micro LED阵列排布在衬底基板上，Micro LED包括在衬底基板上依次形成的氮化镓(GaN)外延层、N型GaN层(GaN:Si)、多量子阱(MQW)层(多层交叠的InGaN/GaN组成)、P型GaN层(GaN:Mg)、绝缘层(SiO2)、电流扩散层(Ni/Au、ITO、石墨烯等)、保护层(SiO2)、N型和P型电极层(Cr/Pt/Au，Pt/Au，Ni/Au等)。\n\n[0073]Micro LED包括第一表面和第二表面，记远离衬底基板的表面为第一表面，第一表面为电极表面，与衬底基板接触的表面为第二表面。由于第一临时基板与Micro LED的第一表面贴合，第一临时基板与Micro LED的第一表面贴合的一侧设置有胶黏层，用于将MicroLED固定在第一临时基板上，避免在Micro LED在转运过程中的移动，同时平坦化并保护Micro LED的第一表面，防止Micro LED和第一临时基板的相互碰撞导致Micro LED电极表面的损坏。\n\n[0074]在一种实施例中，请参照图2(b)，S102剥离衬底基板的具体步骤包括：\n\n[0075]通过激光剥离技术，将蓝宝衬底基板剥离掉。具体的，半导体激光器发出激光光束，照射到蓝宝衬底基板，当激光光束照射到蓝宝衬底基板与Micro LED的粘合胶层时，粘合胶层温度升高，发生激光烧蚀反应，失去粘性，从而实现蓝宝石衬底的剥离。\n\n[0076]通过化学剥离方式，将GaAs衬底基板剥离掉。具体的，采用的化学药剂，如NH4OH和H2O2，对GaAs衬底基板进行选择性腐蚀，通过化学反应将GaAs衬底基板去除掉，从而达到剥离GaAs衬底基板的目的。\n\n[0077]在一种实施例中，请参照图2(c)，S103拉伸基板与Micro LED的第二表面进行贴合的具体步骤包括：在拉伸基板与Micro LED的第二表面接触的一侧涂覆一层粘合胶；将拉伸基板与Micro LED的第二表面贴合；加温固化粘合胶，使拉伸基板与Micro LED的第二表面粘结在一起。\n\n[0078]其中，拉伸基板的材料为具有拉伸性能的聚合物材料。包括PDMS(聚二甲基硅氧烷)，PET(聚对苯二甲酸乙二醇酯)，PC(聚碳酸酯)，PEN(聚萘二甲酸乙二醇酯)等。\n\n[0079]在一种实施例中，请参照图2(d)，S104剥离第一临时基板的具体步骤为通过激光剥离技术，将第一临时基板剥离掉。\n\n[0080]具体的，半导体激光器发出激光光束，照射到第一临时基板的胶黏层，当激光光束照射到胶黏层时，胶黏层的温度升高，胶黏层受热膨胀拱起，使Micro-LED与胶黏层之间的接触面积变小，在重力作用下，Micro-LED脱离第一临时基板，从而将蓝宝石衬底剥离掉。第一临时基板的材料为激光透明材料，激光透明材料有助于激光光束穿过第一临时基板，照射到胶黏层，把更多的热量传递到胶黏层。\n\n[0081]在一种实施例中，请参照图2(e)，S105将拉伸基板进行横向和纵向拉伸，使相邻Micro LED之间的距离达到预定的目标值的具体步骤包括：\n\n[0082]将拉伸基板进行横向均匀拉伸，并检测相邻Micro LED之间的横向距离。如图3(a)和图3(b)所示，图3(a)为将拉伸基板进行横向均匀拉伸的正视图，图3(b)为将拉伸基板进行横向均匀拉伸的俯视图。具体的，对拉伸基板横向方向上的两对边，分别施加背离基板中心的均匀外力F1；同时，通过自动光学检测器对相邻Micro LED之间的横向距离D1进行检测；当相邻micro LED的横向距离D1未达到预定的横向目标值时，继续将拉伸基板进行横向均匀拉伸；当相邻micro LED的间距D1达到预定的横向目标值时，停止拉伸。这里所说的预定的横向目标值，是后续制程中使用的阵列基板上各子像素驱动电路在横向方向上的间隔值。\n\n[0083]将拉伸基板进行纵向均匀拉伸，并检测相邻Micro LED之间的纵向距离。如图3(c)所示，图3(c)为将拉伸基板进行纵向均匀拉伸的俯视图。具体的，对拉伸基板纵向方向上的两对边，分别施加背离基板中心的均匀外力F2；同时，通过自动光学检测器对相邻MicroLED之间的横向距离D2进行检测；当相邻micro LED的横向距离D2未达到预定的纵向目标值时，继续将拉伸基板进行横向均匀拉伸；当相邻micro LED的间距D2达到预定的纵向目标值时，停止拉伸。这里所说的预定的纵向目标值，是后续制程中使用的阵列基板上各子像素驱动电路在纵向方向上的间隔值。\n\n[0084]至此，完成了对拉伸基板横向和纵向方向上的拉伸，通过对拉伸基板的拉伸，带动位于拉伸基板上Micro LED发生空间平移，使得相邻Micro LED横向和纵向之间的距离分别达到预定的目标值，为后续Micro LED与阵列基板的键合提供了基础；且这种Micro LED排列间距的设置方式，可以满足横向和纵向方向上，间距的任意预定目标值，生产的灵活性高；同时，在Micro LED距离重设的过程中，无需使用图案化的磨具或转移头，缩短了生产周期，减低了生产成本。\n\n[0085]在对拉伸基板的横向和纵向拉伸过程中，还可以对拉伸基板进行一定程度的加热，使得拉伸基板的拉伸过程更加容易，拉伸基板拉伸的更加均匀。由于拉伸基板的材料为具有拉伸性能的聚合物，一般聚合物材料均具有受热变软柔化的特性，在对拉伸基板进行拉伸时，对拉伸基板进行一定温度的加热，使得拉伸基板的柔软流动性增加，硬度降低，能够减小拉伸所用的力，同时能够避免拉伸过程中对拉伸基板的损坏，有助于拉伸过程的顺利进行。\n\n[0086]在另一种实施例中，在对拉伸基板进行横向(或纵向)拉伸时，对整个拉伸基板进行均匀加热。对整个拉伸基板均匀加热，使得整个拉伸基板各个部位都能软化，在对基板的两个对边施加均匀外力的情况下，有助于整个基板的拉伸。\n\n[0087]在另一种实施例中，在对拉伸基板进行横向(或纵向)拉伸时，对拉伸基板进行在横向(或纵向)方向上，由拉伸基板中间到拉伸基板两边，加热热量递减的方式进行加热。由于拉伸基板在横向(或纵向)方向上存在一定的尺寸，因此对拉伸基板在横向(或纵向)方向上的两个对边施加外力时，越靠近基板中间位置，越难拉伸变形；对拉伸基板进行在横向(或纵向)方向上，由拉伸基板中间到拉伸基板两边，加热热量递减的方式进行加热，使得拉伸基板的软度，在横向(或纵向)方向上，由拉伸基板两边到拉伸基板中间递增，从而弥补了从拉伸基板两边到拉伸基板中间拉伸难度递增的问题，有助于整个拉伸基板的均匀拉伸。\n\n[0088]本实施例中，对拉伸基板的加热方式可以是风热加热，可以是光照加热，还可以是其他加热方式，在此不做限定。\n\n[0089]在一种实施例中，请参照图2(f)，S106第二临时基板与Micro LED的第一表面进行贴合，具体为将第二临时基板设置有黏胶层的一面，与间距排列成目标值的Micro LED的第一表面粘结在一起。其具体原理，与S101将第一临时基板设置有黏胶层的一面，与MicroLED的第一表面进行贴合相同，可参照上述实施例，在此不再赘述。\n\n[0090]在一种实施例中，请参照图2(g)，S107剥离拉伸基板的具体步骤为通过激光剥离技术，将拉伸基板剥离掉。其具体原理，与通过激光剥离技术，将蓝宝衬底基板剥离掉相同，可参照上述实施例，在此不再赘述。\n\n[0091]在一种实施例中，请参照图2(h)，S108转移基板与Micro LED的第二表面进行贴合的具体步骤包括：在转移基板与Micro LED的第二表面接触的一侧涂覆一层粘合胶；将转移基板与间距排列成目标值的Micro LED的第二表面贴合；加温固化粘合胶，使拉伸基板与间距排列成目标值的Micro LED的第二表面粘结在一起。\n\n[0092]在一种实施例中，请参照图2(i)，S109剥离第二临时基板的具体步骤包括：通过激光剥离技术，将第二临时基板剥离掉。其具体剥离原理，与通过激光剥离技术，将蓝宝衬底基板剥离掉相同，可参照上述实施例，在此不再赘述。\n\n[0093]在一种实施例中，请参照图2(j)，S110转移基板带动Micro LED与阵列基板键合的具体步骤包括：\n\n[0094]转移基板带动间距排列成目标值的Micro LED与阵列基板进行对准。具体的，移动转移基板，使得位于转移基板上的各个Micro LED与阵列基板的各子像素驱动电路一一对齐，Micro LED的第一表面与阵列基板的驱动电路层相向对准。\n\n[0095]将Micro LED的第一表面与阵列基板进行键合。具体键合方式可以采用热超声键合、热压键合或其它键合方式，在此不做限定。\n\n[0096]在一种实施例中，请参照图2(k)，S111剥离转移基板的具体步骤包括：通过激光剥离技术，将转移基板剥离掉。其具体剥离原理，与通过激光剥离技术，将蓝宝衬底基板剥离掉相同，可参照上述实施例，在此不再赘述。\n\n[0097]同时，本发明提供一种Micro LED的转移装置，如图4所示，图4为本发明实施例提供的Micro LED的转移装置的结构框图，该转移装置包括：\n\n[0098]第一临时基板410，用于临时承载Micro LED。\n\n[0099]基板剥离构件420，用于对粘结Micro LED的基板进行剥离。\n\n[0100]拉伸基板430，用于承载Micro LED，拉伸基板430可以进行横向和纵向拉伸。\n\n[0101]拉伸构件440，包括横向夹持拉伸部件和纵向夹持拉伸部件，横向夹持拉伸部件用于夹持拉伸基板横向方向上的两对边，并对所述对边施加背离基板中心的均匀外力；纵向夹持拉伸部件用于夹持拉伸基板纵向方向上的两对边，并对所述对边施加背离基板中心的均匀外力。\n\n[0102]第二临时基板450，用于临时承载Micro LED。\n\n[0103]转移基板460，用于将Micro LED转移至阵列基板。\n\n[0104]本实施例提供一种Micro LED的转移装置，该装置通过第一临时基板将位于衬底基板生的Micro LED转移至拉伸基板，然后通过拉伸构件对拉伸基板进行横向和纵向拉伸，通过拉伸基板的拉伸作用，带动Micro LED发生空间平移，使Micro LED横向间距和纵向间距都达到预定的目标值，随后再通过第二临时基板和转移基板将间距排列成目标值的Micro LED转移至阵列基板，最后间距排列成目标值的Micro LED与至阵列基板键合，从而完成Micro LED的转移过程；该转移装置不包括图案化的模具或者图案化的转移头，制作成本降低，生产周期缩短；同时，拉伸构件对拉伸基板的拉伸作用可控，可以满足对Micro LED任意目标间距的拉伸，生产的灵活性更高。有效改进了现有Micro LED的转移。\n\n[0105]在一种实施例中，拉伸基板430的材料为具有拉伸性能的聚合物材料，如PDMS(聚二甲基硅氧烷)，PET(聚对苯二甲酸乙二醇酯)，PC(聚碳酸酯)，PEN(聚萘二甲酸乙二醇酯)等。\n\n[0106]在一种实施例中，横向夹持拉伸部件包括相对设置的两个横向基板夹和横向基板驱动器；该横向基板夹包括上夹板和下夹板，上夹板和下夹板的长度相同，长于拉伸基板的纵向长度；横向基板驱动器用于驱动两个横向基板夹向背离拉伸基板的方向做匀速运动。纵向夹持拉伸部件包括相对设置的两个纵向基板夹和纵向基板驱动器，纵向基板夹也包括上夹板和下夹板，上夹板的长度和下夹板的长度相同，长于拉伸基板横向拉伸后的横向长度；纵向基板驱动器用于驱动两个纵向基板夹向背离拉伸基板的方向做匀速运动。\n\n[0107]在一种实施例中，拉伸构件440还包括距离检测部件，用于在拉伸基板的拉伸过程中，对相邻Micro LED之间的距离进行检测。当检测到相邻Micro LED之间的横向(纵向)距离未达到目标值时，继续驱动拉伸构件对拉伸基板进行横向(纵向)均匀拉伸；当检测到相邻Micro LED之间的横向(纵向)距离达到目标值时，停止拉伸。距离检测部件为自动光学检测器。\n\n[0108]在一种实施例中，拉伸构件440还包括加热部件，用于在拉伸过程中对拉伸基板进行加热。该加热构件可以是均匀加热式的，也可以是可调加热式的，如对拉伸基板进行由基板中间位置向拉伸两边热量递减的加热方式。加热部件可以是热风机、光照机或其他加热器件。\n\n[0109]在一种实施例中，第一临时基板410和第二临时基板450均包括胶黏层，胶黏层用于与所述Micro LED的电极表面进行贴合，固定Micro LED，避免在Micro LED在转运过程中的移动，同时平坦化并保护Micro LED的第一表面，防止Micro LED和第一临时基板的相互碰撞导致Micro LED电极表面的损坏。\n\n[0110]在一种实施例中，基板剥离构件420包括激光剥离部件和化学剥离部件，激光剥离部件用于将蓝宝石衬底基板、第一临时基板、拉伸基板、以及第二临时基板与Micro LED剥离开，化学剥离部件用于将GaAs衬底基板与Micro LED剥离开。\n\n[0111]根据上述实施例可知：\n\n[0112]本发明实施例提供了一种Micro LED的转移方法及转移装置，该方法包括：第一临时基板与位于衬底基板上的Micro LED的第一表面进行贴合；剥离衬底基板；拉伸基板与Micro LED的第二表面进行贴合；剥离第一临时基板；将拉伸基板进行横向和纵向拉伸，使相邻Micro LED之间的距离达到预定的目标值；第二临时基板与Micro LED的第一表面进行贴合；剥离拉伸基板；转移基板与Micro LED的第二表面进行贴合；剥离第二临时基板；转移基板带动Micro LED与阵列基板键合；剥离转移基板。该方法通过将衬底基板上阵列设置的Micro LED转移至拉伸基板，然后通过对拉伸基板做横向和纵向均匀拉伸，使得相邻MicroLED之间的横向和纵向距离均达到预定的目标值，最后再将间距排列成目标值的Micro LED与阵列基板进行键合，从而完成Micro LED的转移过程。该方法无需制作图案化的模具或者图案化的转移头，生产周期缩短，制作成本降低；同时，采用拉伸基板拉伸来实现Micro LED的目标间距，可以满足不同Micro LED间距设计的需要，生产的灵活性更高。有效改进了现有Micro LED的转移方法。\n\n[0113]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10737, 23791, '技术领域\n\n[0001]本发明涉及显示面板技术领域，特别涉及一种显示面板及其制备方法、显示装置。\n\n背景技术\n\n[0002]微型发光二极管(Mini LED)在显示上主要有两种应用，一种是作为自发光LED显示，同小间距LED类似，由于封装形式上不需要打金线，相比于小间距LED，即使在同样的芯片尺寸上Mini LED也可以做更小的点间距显示。另外一种是在背光上的应用，相比于传统的背光LED模组，Mini LED背光模组将采用更加密集的芯片排布来减少混光距离，做到超薄的光源模组。另外配合区域控制，Mini LED将有更好的对比度和显示效果。在显示的几个最基本要素包括，功耗，成本，寿命，点间距，亮度，对比度上，Mini LED基本上是一个全能选手。\n\n[0003]在玻璃基板上进行TFT工艺驱动Mini LED显示为一个新的领域，由于玻璃基板透明，容易造成光的损伤，故会在PCB板上做一层白油作为反光层，但PCB制程精度低，容易覆盖LED Pad，且制作工艺洁净度差，不利于玻璃TFT制程。\n\n[0004]因此，确有必要来开发一种新型的显示面板，以克服现有技术的缺陷。\n\n发明内容\n\n[0005]本发明的一个目的是提供一种显示面板，其能够解决现有技术中玻璃基板容易造成微型发光二极管光的损失的问题。\n\n[0006]为实现上述目的，本发明还提供一种显示面板，包括显示区和围绕所述显示区的非显示区；以及基板，从所述显示区延伸至所述非显示区；光阻层，设于所述显示区的所述基板上；微型发光二极管层，设于所述非显示区的所述基板上。\n\n[0007]进一步的，在其他实施方式中，其中所述基板包括：衬底层，从所述显示区延伸至所述非显示区；栅极层；设于所述显示区的所述衬底层上；栅极绝缘层，设于所述基板层和所述栅极层上，且从所述显示区延伸至所述非显示区；有源层，设于所述显示区的所述栅极绝缘层上；源漏极层，设于所述有源层上和所述非显示区的所述栅极绝缘层上；平坦层，设于所述显示区的所述源漏极层和所述栅极绝缘层上；像素电极层，设于所述平坦层上，且与所述栅极层相接；其中所述光阻层，设于所述像素电极层和所述平坦层上，所述微型发光二极管层设于所述非显示区的所述源漏极层上。\n\n[0008]进一步的，在其他实施方式中，其中所述光阻层采用正性光阻或负性光阻。\n\n[0009]进一步的，在其他实施方式中，其中所述光阻层为白色反光材料。\n\n[0010]进一步的，在其他实施方式中，其中所述光阻层的厚度为0.8-3um。\n\n[0011]本发明的另一目的是提供一种制备方法，用以制备本发明涉及的所述显示面板，所述显示面板包括显示区和围绕所述显示区的非显示区，所述制备方法包括以下步骤：提供一基板，所述基板从所述显示区延伸至所述非显示区；制备光阻层于所述显示区的所述基板上；制备微型发光二极管层于所述非显示区的所述基板上。\n\n[0012]进一步的，在其他实施方式中，其中所述微型发光二极管层是通过贴片工艺制备的。\n\n[0013]进一步的，在其他实施方式中，其中所述光阻层是通过涂布的方式制备的。\n\n[0014]进一步的，在其他实施方式中，其中提供一基板的步骤包括提供一衬底层，所述衬底层从所述显示区延伸至所述非显示区；制备栅极层于所述显示区的所述衬底层上；制备栅极绝缘层于所述基板层和所述栅极层上，所述栅极绝缘层从所述显示区延伸至所述非显示区；制备有源层于所述显示区的所述栅极绝缘层上；制备源漏极层于所述有源层上和所述非显示区的所述栅极绝缘层上；制备平坦层于所述显示区的所述源漏极层和所述栅极绝缘层上；制备像素电极层于所述平坦层上，所述像素电极层且与所述栅极层相接；其中所述光阻层，设于所述像素电极层和所述平坦层上，所述微型发光二极管层设于所述非显示区的所述源漏极层上。\n\n[0015]进一步的，在其他实施方式中，其中所述衬底层的材料采用玻璃基板。\n\n[0016]进一步的，在其他实施方式中，其中所述栅极层的材料采用钼金属或钛金属中的至少一种。\n\n[0017]进一步的，在其他实施方式中，其中所述栅极绝缘层的材料采用氮化硅、氧化硅或氮氧化硅中的至少一种。\n\n[0018]为实现上述目的，本发明还提供一种显示装置，包括本发明涉及的所述显示面板。\n\n[0019]相对于现有技术，本发明的有益效果在于：本发明提供一种显示面板及其制备方法、显示装置，涂布一层白色光阻层在基板上，提升微型发光二极管的亮度，降低微型发光二极管背光基板制作成本，提升生产良率；同时能够保护薄膜晶体管器件，提高薄膜晶体管器件的稳定性。\n\n附图说明\n\n[0020]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0021]图1为本发明实施例提供的显示面板的结构示意图；\n\n[0022]图2为本发明实施例提供的显示面板的制备方法的流程图；\n\n[0023]图3为本发明实施例提供的显示面板的制备方法在步骤S1时的结构示意图；\n\n[0024]图4为本发明实施例提供的显示面板的制备方法在步骤S3时的结构示意图；\n\n[0025]图5为本发明实施例提供的显示面板的制备方法在步骤S3时的结构示意图。\n\n[0026]具体实施方式中的附图标记：\n\n[0027]显示面板-100；\n\n[0028]显示区-101； 非显示区-102；\n\n[0029]基板-110； 光阻层-120；\n\n[0030]微型发光二极管层-130；\n\n[0031]衬底层-111； 栅极层-112；\n\n[0032]栅极绝缘层-113； 有源层-114；\n\n[0033]源漏极层-115； 平坦层-116；\n\n[0034]像素电极层-117。\n\n具体实施方式\n\n[0035]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0036]这里所公开的具体结构和功能细节仅仅是代表性的，并且是用于描述本发明的示例性实施例的目的。但是本发明可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。\n\n[0037]本实施例提供一种显示面板100，请参阅图1所示，图1为本实施例提供的显示面板100的结构示意图。显示面板100包括显示区101和围绕显示区101的非显示区，以及基板110、光阻层120和微型发光二极管层130。\n\n[0038]基板110包括：衬底层111，从显示区101延伸至非显示区102；栅极层112；设于显示区101的衬底层111上；栅极绝缘层113，设于基板110层和栅极层112上，且从显示区101延伸至非显示区102；有源层114，设于显示区101的栅极绝缘层113上；源漏极层115，设于有源层114上和非显示区102的栅极绝缘层113上；平坦层116，设于显示区101的源漏极层115和栅极绝缘层113上；像素电极层117，设于平坦层116上，且与栅极层112相接。\n\n[0039]其中衬底层111的材料采用玻璃基板110，栅极层112的材料采用钼金属或钛金属中的至少一种，有源层114的材料采用铟镓锌氧化物、铟锌锡氧化物中的至少一种，源漏极层115的材料采用钼、铝、铜或钛金属中的至少一种，栅极绝缘层113的材料采用氮化硅、氧化硅或氮氧化硅中的至少一种。\n\n[0040]光阻层120，设于像素电极层117和平坦层116上，微型发光二极管层130设于非显示区102的源漏极层115上。\n\n[0041]光阻层120采用正性光阻或负性光阻，光阻层120为白色反光材料，光阻层120的厚度为0.8-3um。\n\n[0042]涂布一层白色光阻层120在基板110上，提升微型发光二极管的亮度，降低微型发光二极管背光基板110制作成本，提升生产良率；同时能够保护薄膜晶体管器件，提高薄膜晶体管器件的稳定性。\n\n[0043]本发明的另一目的是提供一种制备方法，用以制备本发明涉及的显示面板100，显示面板100包括显示区101和围绕显示区101的非显示区102。请参阅图2，图2所示为本实施例提供的制备方法的流程图，制备方法包括以下步骤S1-步骤S3。\n\n[0044]步骤S1：提供一基板110，基板110从显示区101延伸至非显示区102；请参阅图3，图3所示为本实施例提供的显示面板的制备方法步骤S1时的结构示意图。\n\n[0045]提供一基板110的步骤包括提供一衬底层111，衬底层111从显示区101延伸至非显示区102；制备栅极层112于显示区101的衬底层111上；制备栅极绝缘层113于基板110层和栅极层112上，栅极绝缘层113从显示区101延伸至非显示区102；制备有源层114于显示区101的栅极绝缘层113上；制备源漏极层115于有源层114上和非显示区102的栅极绝缘层113上；制备平坦层116于显示区101的源漏极层115和栅极绝缘层113上；制备像素电极层117于平坦层116上，像素电极层117且与栅极层112相接。\n\n[0046]步骤S2：制备光阻层120于显示区101的像素电极层117和平坦层116上；请参阅图4，图4所示为本实施例提供的显示面板的制备方法步骤S2时的结构示意图。\n\n[0047]其中光阻层120是通过涂布的方式制备的。\n\n[0048]步骤S3：制备微型发光二极管层130于非显示区102的源漏极层115上；请参阅图5，图5所示为本实施例提供的显示面板的制备方法步骤S3时的结构示意图。\n\n[0049]其中微型发光二极管层130是通过贴片工艺制备的。\n\n[0050]本实施例还提供一种显示装置，包括本实施例涉及的显示面板100。\n\n[0051]本发明的有益效果在于：本发明提供一种显示面板及其制备方法、显示装置，涂布一层白色光阻层在基板上，提升微型发光二极管的亮度，降低微型发光二极管背光基板制作成本，提升生产良率；同时能够保护薄膜晶体管器件，提高薄膜晶体管器件的稳定性。\n\n[0052]以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。', '技术领域\n\n[0001]本发明涉及显示面板技术领域，特别涉及一种显示面板及其制备方法、显示装置。\n\n背景技术\n\n[0002]微型发光二极管(Mini LED)在显示上主要有两种应用，一种是作为自发光LED显示，同小间距LED类似，由于封装形式上不需要打金线，相比于小间距LED，即使在同样的芯片尺寸上Mini LED也可以做更小的点间距显示。另外一种是在背光上的应用，相比于传统的背光LED模组，Mini LED背光模组将采用更加密集的芯片排布来减少混光距离，做到超薄的光源模组。另外配合区域控制，Mini LED将有更好的对比度和显示效果。在显示的几个最基本要素包括，功耗，成本，寿命，点间距，亮度，对比度上，Mini LED基本上是一个全能选手。\n\n[0003]在玻璃基板上进行TFT工艺驱动Mini LED显示为一个新的领域，由于玻璃基板透明，容易造成光的损伤，故会在PCB板上做一层白油作为反光层，但PCB制程精度低，容易覆盖LED Pad，且制作工艺洁净度差，不利于玻璃TFT制程。\n\n[0004]因此，确有必要来开发一种新型的显示面板，以克服现有技术的缺陷。\n\n发明内容\n\n[0005]本发明的一个目的是提供一种显示面板，其能够解决现有技术中玻璃基板容易造成微型发光二极管光的损失的问题。\n\n[0006]为实现上述目的，本发明还提供一种显示面板，包括显示区和围绕所述显示区的非显示区；以及基板，从所述显示区延伸至所述非显示区；光阻层，设于所述显示区的所述基板上；微型发光二极管层，设于所述非显示区的所述基板上。\n\n[0007]进一步的，在其他实施方式中，其中所述基板包括：衬底层，从所述显示区延伸至所述非显示区；栅极层；设于所述显示区的所述衬底层上；栅极绝缘层，设于所述基板层和所述栅极层上，且从所述显示区延伸至所述非显示区；有源层，设于所述显示区的所述栅极绝缘层上；源漏极层，设于所述有源层上和所述非显示区的所述栅极绝缘层上；平坦层，设于所述显示区的所述源漏极层和所述栅极绝缘层上；像素电极层，设于所述平坦层上，且与所述栅极层相接；其中所述光阻层，设于所述像素电极层和所述平坦层上，所述微型发光二极管层设于所述非显示区的所述源漏极层上。\n\n[0008]进一步的，在其他实施方式中，其中所述光阻层采用正性光阻或负性光阻。\n\n[0009]进一步的，在其他实施方式中，其中所述光阻层为白色反光材料。\n\n[0010]进一步的，在其他实施方式中，其中所述光阻层的厚度为0.8-3um。\n\n[0011]本发明的另一目的是提供一种制备方法，用以制备本发明涉及的所述显示面板，所述显示面板包括显示区和围绕所述显示区的非显示区，所述制备方法包括以下步骤：提供一基板，所述基板从所述显示区延伸至所述非显示区；制备光阻层于所述显示区的所述基板上；制备微型发光二极管层于所述非显示区的所述基板上。\n\n[0012]进一步的，在其他实施方式中，其中所述微型发光二极管层是通过贴片工艺制备的。\n\n[0013]进一步的，在其他实施方式中，其中所述光阻层是通过涂布的方式制备的。\n\n[0014]进一步的，在其他实施方式中，其中提供一基板的步骤包括提供一衬底层，所述衬底层从所述显示区延伸至所述非显示区；制备栅极层于所述显示区的所述衬底层上；制备栅极绝缘层于所述基板层和所述栅极层上，所述栅极绝缘层从所述显示区延伸至所述非显示区；制备有源层于所述显示区的所述栅极绝缘层上；制备源漏极层于所述有源层上和所述非显示区的所述栅极绝缘层上；制备平坦层于所述显示区的所述源漏极层和所述栅极绝缘层上；制备像素电极层于所述平坦层上，所述像素电极层且与所述栅极层相接；其中所述光阻层，设于所述像素电极层和所述平坦层上，所述微型发光二极管层设于所述非显示区的所述源漏极层上。\n\n[0015]进一步的，在其他实施方式中，其中所述衬底层的材料采用玻璃基板。\n\n[0016]进一步的，在其他实施方式中，其中所述栅极层的材料采用钼金属或钛金属中的至少一种。\n\n[0017]进一步的，在其他实施方式中，其中所述栅极绝缘层的材料采用氮化硅、氧化硅或氮氧化硅中的至少一种。\n\n[0018]为实现上述目的，本发明还提供一种显示装置，包括本发明涉及的所述显示面板。\n\n[0019]相对于现有技术，本发明的有益效果在于：本发明提供一种显示面板及其制备方法、显示装置，涂布一层白色光阻层在基板上，提升微型发光二极管的亮度，降低微型发光二极管背光基板制作成本，提升生产良率；同时能够保护薄膜晶体管器件，提高薄膜晶体管器件的稳定性。\n\n附图说明\n\n[0020]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0021]图1为本发明实施例提供的显示面板的结构示意图；\n\n[0022]图2为本发明实施例提供的显示面板的制备方法的流程图；\n\n[0023]图3为本发明实施例提供的显示面板的制备方法在步骤S1时的结构示意图；\n\n[0024]图4为本发明实施例提供的显示面板的制备方法在步骤S3时的结构示意图；\n\n[0025]图5为本发明实施例提供的显示面板的制备方法在步骤S3时的结构示意图。\n\n[0026]具体实施方式中的附图标记：\n\n[0027]显示面板-100；\n\n[0028]显示区-101； 非显示区-102；\n\n[0029]基板-110； 光阻层-120；\n\n[0030]微型发光二极管层-130；\n\n[0031]衬底层-111； 栅极层-112；\n\n[0032]栅极绝缘层-113； 有源层-114；\n\n[0033]源漏极层-115； 平坦层-116；\n\n[0034]像素电极层-117。\n\n具体实施方式\n\n[0035]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0036]这里所公开的具体结构和功能细节仅仅是代表性的，并且是用于描述本发明的示例性实施例的目的。但是本发明可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。\n\n[0037]本实施例提供一种显示面板100，请参阅图1所示，图1为本实施例提供的显示面板100的结构示意图。显示面板100包括显示区101和围绕显示区101的非显示区，以及基板110、光阻层120和微型发光二极管层130。\n\n[0038]基板110包括：衬底层111，从显示区101延伸至非显示区102；栅极层112；设于显示区101的衬底层111上；栅极绝缘层113，设于基板110层和栅极层112上，且从显示区101延伸至非显示区102；有源层114，设于显示区101的栅极绝缘层113上；源漏极层115，设于有源层114上和非显示区102的栅极绝缘层113上；平坦层116，设于显示区101的源漏极层115和栅极绝缘层113上；像素电极层117，设于平坦层116上，且与栅极层112相接。\n\n[0039]其中衬底层111的材料采用玻璃基板110，栅极层112的材料采用钼金属或钛金属中的至少一种，有源层114的材料采用铟镓锌氧化物、铟锌锡氧化物中的至少一种，源漏极层115的材料采用钼、铝、铜或钛金属中的至少一种，栅极绝缘层113的材料采用氮化硅、氧化硅或氮氧化硅中的至少一种。\n\n[0040]光阻层120，设于像素电极层117和平坦层116上，微型发光二极管层130设于非显示区102的源漏极层115上。\n\n[0041]光阻层120采用正性光阻或负性光阻，光阻层120为白色反光材料，光阻层120的厚度为0.8-3um。\n\n[0042]涂布一层白色光阻层120在基板110上，提升微型发光二极管的亮度，降低微型发光二极管背光基板110制作成本，提升生产良率；同时能够保护薄膜晶体管器件，提高薄膜晶体管器件的稳定性。\n\n[0043]本发明的另一目的是提供一种制备方法，用以制备本发明涉及的显示面板100，显示面板100包括显示区101和围绕显示区101的非显示区102。请参阅图2，图2所示为本实施例提供的制备方法的流程图，制备方法包括以下步骤S1-步骤S3。\n\n[0044]步骤S1：提供一基板110，基板110从显示区101延伸至非显示区102；请参阅图3，图3所示为本实施例提供的显示面板的制备方法步骤S1时的结构示意图。\n\n[0045]提供一基板110的步骤包括提供一衬底层111，衬底层111从显示区101延伸至非显示区102；制备栅极层112于显示区101的衬底层111上；制备栅极绝缘层113于基板110层和栅极层112上，栅极绝缘层113从显示区101延伸至非显示区102；制备有源层114于显示区101的栅极绝缘层113上；制备源漏极层115于有源层114上和非显示区102的栅极绝缘层113上；制备平坦层116于显示区101的源漏极层115和栅极绝缘层113上；制备像素电极层117于平坦层116上，像素电极层117且与栅极层112相接。\n\n[0046]步骤S2：制备光阻层120于显示区101的像素电极层117和平坦层116上；请参阅图4，图4所示为本实施例提供的显示面板的制备方法步骤S2时的结构示意图。\n\n[0047]其中光阻层120是通过涂布的方式制备的。\n\n[0048]步骤S3：制备微型发光二极管层130于非显示区102的源漏极层115上；请参阅图5，图5所示为本实施例提供的显示面板的制备方法步骤S3时的结构示意图。\n\n[0049]其中微型发光二极管层130是通过贴片工艺制备的。\n\n[0050]本实施例还提供一种显示装置，包括本实施例涉及的显示面板100。\n\n[0051]本发明的有益效果在于：本发明提供一种显示面板及其制备方法、显示装置，涂布一层白色光阻层在基板上，提升微型发光二极管的亮度，降低微型发光二极管背光基板制作成本，提升生产良率；同时能够保护薄膜晶体管器件，提高薄膜晶体管器件的稳定性。\n\n[0052]以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10738, 23792, '技术领域\n\n[0001]本申请有关于显示技术领域，特别是有关于一种用于量子点显示面板的光耦合输出透镜的材料组成物及制造方法。\n\n背景技术\n\n[0002]有机发光二极管(OLED)拥有自发光，对比度高及可制作成柔性、弯曲的产品的优点，是非常具有潜力的显示技术。然而，OLED以白光为底光，OLED需要通过设置滤光片，并通过颜色组合呈现出我们肉眼可见的绚丽色彩。而OLED的高强度，则依赖于通过电流的大小，电流越大，电子携带的能量就越大，所产生的光亮度就越高。因此，OLED具有工作温度高、耗能、亮度低、色域有限等缺点。\n\n[0003]故，有必要提供一种量子点有机发光二极管显示面板及其制造方法，以解决现有技术所存在的问题。\n\n发明内容\n\n[0004]有鉴于此，本发明提供一种量子点有机发光二极管显示面板及其制造方法，以解决现有技术所存在的工作温度高、耗能、亮度低、色域有限等问题。\n\n[0005]本发明的主要目的在于提供一种光耦合输出透镜的材料组成物，其可以通过涂布、烘干、曝光、显影、加热(或通过打印/转印、固化)后形成光耦合输出透镜，所述光耦合输出透镜可增加光耦合输出系数，提高有机发光二极管的发光效率。另一方面，所述光耦合输出透镜中的量子点，可吸收由有机发光二极管所发出的白光中的短波长成分，发射出红光或绿光。对红子像素或绿子像素的亮度有补强作用，使屏幕更加节能，亮度更高，色域更广。\n\n[0006]本发明的次要目的在于提供一种量子点有机发光二极管显示面板，以有机发光二极管来激发量子点发光，量子点具有发光光谱集中及色纯度高等优点，可以大幅度提高色彩的饱和度及色域。此外，在有机发光二极管的外部还可设置微结构(例如：棱镜、半球型透镜、光栅等)，可显着提高光取出率。\n\n[0007]为达成本发明的前述目的，本发明一实施例提供一种用于量子点显示面板的光耦合输出透镜的材料组成物，所述光耦合输出透镜的材料组成物包括：\n\n[0008]三羟甲基丙烷三(3-巯基丙酸酯)；\n\n[0009]三乙二醇二乙烯基醚；及\n\n[0010]紫外自由基引发剂；\n\n[0011]其中三羟甲基丙烷三(3-巯基丙酸酯)与三乙二醇二乙烯基醚的摩尔比为2：3，通过紫外光固化形成光耦合输出透镜。\n\n[0012]在本发明的一实施例中，所述材料组成物被配制成打印墨水，经固化后形成半球形的光耦合输出透镜。\n\n[0013]在本发明的一实施例中，所述材料组成物还包括：多个量子点，所述多个量子点吸收白光中的短波长，发射出红光或绿光。\n\n[0014]在本发明的一实施例中，所述材料组成物还包括：光刻胶，所述量子点与所述光刻胶的溶质的质量比例为2％至12％。\n\n[0015]在本发明的一实施例中，所述量子点有机发光二极管显示面板还包括：封装层，所述光耦合输出透镜为半球型，所述光耦合输出透镜呈阵列排列在所述封装层上。\n\n[0016]在本发明的一实施例中，所述光耦合输出透镜的底部直径为30至100微米之间，所述光耦合输出透镜的高度为20至80微米之间。\n\n[0017]再者，本发明另一实施例另提供一种量子点显示面板的光耦合输出透镜的制造方法，所述制造方法包括以下多个步骤：\n\n[0018]将三羟甲基丙烷三(3-巯基丙酸酯)及三乙二醇二乙烯基醚以2：3的摩尔比混合；\n\n[0019]加入紫外自由基引发剂，形成光耦合输出透镜的材料组成物；及\n\n[0020]将所述材料组成物设置在量子点显示面板的薄膜封装层上，并对所述材料组成物进行紫外光固化工序，形成光耦合输出透镜。在本发明的一实施例中，\n\n[0021]在本发明的一实施例中，所述制造方法还包括：\n\n[0022]将三羟甲基丙烷三(3-巯基丙酸酯)、三乙二醇二乙烯基醚、紫外自由基引发剂、多个量子点共混配制成打印墨水；\n\n[0023]在所述薄膜封装层上打印或转印所述打印墨水；及\n\n[0024]经紫外光固化后形成所述光耦合输出透镜。\n\n[0025]在本发明的一实施例中，所述制造方法还包括：在所述材料组成物中加入多个量子点及光刻胶，其中所述多个量子点与所述光刻胶的溶质的质量比例为2％至12％。\n\n[0026]在本发明的一实施例中，所述制造方法还包括：对所述光耦合输出透镜在80至100℃下进行热加工处理，所述光耦合输出透镜受热形变形成半球型。\n\n[0027]与现有技术相比较，本发明的光耦合输出透镜的材料组成物可以通过涂布、烘干、曝光、显影、加热(或通过打印/转印、固化)后形成光耦合输出透镜，所述光耦合输出透镜可增加光耦合输出系数，提高有机发光二极管的发光效率。另一方面，所述光耦合输出透镜中的量子点，可吸收由有机发光二极管所发出的白光中的短波长成分，发射出红光或绿光。对红子像素或绿子像素的亮度有补强作用，使屏幕更加节能，亮度更高，色域更广，提高光取出率。本发明的量子点有机发光二极管显示面板，以有机发光二极管来激发量子点发光，量子点具有发光光谱集中及色纯度高等优点，可以大幅度提高色彩的饱和度及色域。此外，三羟甲基丙烷三(3-巯基丙酸酯)及三乙二醇二乙烯基醚这两个单体毒性小，对打印机喷头腐蚀性低，粘度适合打印工序，并且可以使量子点均匀分散，所形成的光耦合输出透镜具有良好透光性及稳定性。\n\n附图说明\n\n[0028]为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下。\n\n[0029]图1为本发明的第一实施例的量子点显示面板的结构示意图。\n\n[0030]图2为本发明的第一实施例的量子点显示面板的发光示意图。\n\n[0031]图3为本发明的第一实施例的量子点显示面板的光耦合输出透镜的制造方法的流程图。\n\n[0032]图4为本发明的第二实施例的量子点显示面板的光耦合输出透镜的制造方法的流程图。\n\n[0033]图5为根据本发明的第二实施例的所述制造方法对光耦合输出透镜201的材料组成物进行喷墨打印后的示意图。\n\n[0034]图6为本发明的第三实施例的量子点显示面板的光耦合输出透镜的制造方法的流程图。\n\n[0035]图7为根据本发明的第三实施例的所述制造方法制备一光耦合输出层的示意图。\n\n[0036]图8为根据本发明的第三实施例的所述制造方法对所述光耦合输出层进行图像化处理后的示意图。\n\n[0037]图9为根据本发明的第三实施例的所述制造方法对所述光耦合输出层进行热加工处理后的示意图。\n\n具体实施方式\n\n[0038]以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。再者，本发明所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧面、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。\n\n[0039]本文所用术语“包含”、“具有”及其词形变化是指“包含但不限于”。\n\n[0040]本文所用术语“一”、“一个”及“至少一”包含复数引用，除非上下文另有明确规定。例如，术语“一处理模组”或“至少一处理模组”可以包含多个处理模组，包含其组合物。\n\n[0041]本文所用术语“多个”、“数个”除另有说明外皆可选自二个、三个或以上，而“至少一个”除另有说明外皆可选自一个、二个、三个或以上，于此合先叙明。\n\n[0042]本文中所揭露的大小及数值不应意图被理解为严格限于所述精确数值。相反的，除非另外指明，各种大小旨在表示所引用的数值以及功能上与所述数值相同的范围。例如所揭露的大小为“10微米”是指“约10微米”。\n\n[0043]请参照图1至图2，图1为本发明的第一实施例的量子点显示面板的结构示意图，图2为本发明的第一实施例的量子点显示面板的发光示意图。\n\n[0044]所述量子点显示面板10包括：光耦合输出透镜201。所述量子点显示面板10可以是量子点有机发光二极管显示面板。\n\n[0045]在本发明的第一实施例中，所述量子点显示面板10还可包括：基底101、薄膜晶体管(TFT)阵列102、平坦化层103、阳极104、像素限定层105、有机发光二极管106、阴极107、薄膜封装层108、黑色矩阵110及盖板114，所述多个组件依次形成在基底101上。\n\n[0046]所述光耦合输出透镜201的材料组成物包括：三羟甲基丙烷三(3-巯基丙酸酯)、三乙二醇二乙烯基醚、紫外自由基引发剂；其中三羟甲基丙烷三(3-巯基丙酸酯)与三乙二醇二乙烯基醚的摩尔比为2：3，通过紫外光固化形成所述光耦合输出透镜。\n\n[0047]所述三羟甲基丙烷三(3-巯基丙酸酯)及所述三乙二醇二乙烯基醚可以通过任何已知的制造方法取得或在商业上取得。\n\n[0048]所述紫外自由基引发剂可以是1-羟基环己基苯基甲酮，其可以通过任何已知的制造方法取得或在商业上取得。所述紫外自由基引发剂的质量比例为2％，所述紫外自由基引发剂可以是1-羟基环己基苯基甲酮。\n\n[0049]所述基底101及所述盖板114可以是透明绝缘材料，例如：玻璃、塑料或陶瓷材料的透明绝缘材料。若为塑料基板，其材料例如为聚乙烯对苯二甲酯、聚酯、聚碳酸酯、聚丙烯酸酯或是聚苯乙烯。\n\n[0050]如图2所示，所述材料组成物设置在所述薄膜晶体管阵列102上，具体地，在所述封装层108上，所述材料组成物可以以阵列排列在各个像素上，增强由有机发光二极管106发出的白光301的强度。\n\n[0051]所述材料组成物还可包括：多个量子点204、205，所述多个量子点204、205的质量比例为2至10％。\n\n[0052]在本发明的第一实施例中，所述多个量子点204、205可以是红色发光量子点或绿色发光量子点。在本发明的另一实施例中，所述多个量子点204、205可以是红色量子点或绿色量子点。或者，在本发明的另一实施例中，所述多个量子点204、205吸收白光中的短波长，发射出红光或绿光。\n\n[0053]所述具有红色发光量子点或红色量子点的所述光耦合输出透镜201为红色光耦合输出透镜202，所述具有绿色发光量子点或绿色量子点的所述光耦合输出透镜201为绿色光耦合输出透镜203。\n\n[0054]在本发明的一实施例中，所述光耦合输出透镜201的材料组成物为透明。\n\n[0055]在本发明的另一实施例中，所述光耦合输出透镜201过滤由有机发光二极管106发出的白光，仅允许蓝光通过，而所述光耦合输出透镜201的材料组成物与所述多个量子点204、205混合后允许红光302或绿光303通过。\n\n[0056]在本发明的另一实施例中，通过调整所述量子点204、205的半径，使所述量子点204、205发出红光302或绿光303。所述量子点204、205的半径越小，则发光的波长越短(蓝移)，所述量子点204、205的半径越大，则发光的波长越长(红移)。\n\n[0057]在本发明的另一实施例中，所述量子点204、205适于吸收具有第一光谱的入射光，并将所吸收的所述入射光重新发射为具有第二光谱的出射光。例如：所述入射光为白光，所述出射光为红光或绿光。例如：所述入射光为蓝光，所述出射光为红光或绿光。\n\n[0058]所述多个量子点204、205可以通过任何已知的制造方法取得或在商业上取得，例如：CdSe量子点、ZnS量子点、CdTe量子点、PbTe量子点、ZnSe量子点、Si量子点、Ge量子点或PbSe量子点。\n\n[0059]所述光耦合输出透镜的材料组成物被配制成打印墨水，经固化后形成半球形的光耦合输出透镜201。所述光耦合输出透镜201的底部的直径为30至100微米，高度为20至80微米之间，所述直径及所述高度可按照需求调整工艺条件。\n\n[0060]所述光耦合输出透镜的材料组成物还包括：光刻胶，所述量子点204、205与所述光刻胶的溶质质量比例为2％至12％。\n\n[0061]所述基板可以是透明绝缘材料，例如玻璃、塑料或陶瓷材料的透明绝缘材料。若为塑料基板，其材料例如为聚乙烯对苯二甲酯、聚酯、聚碳酸酯、聚丙烯酸酯或是聚苯乙烯。\n\n[0062]所述薄膜晶体管阵列102可选自于由低温多晶硅薄膜晶体管(LTPS-TFT)、非晶硅薄膜晶体管(a-Si：HTFT)及有机薄膜晶体管(OTFT)组成的群组。\n\n[0063]所述平坦化层103的适当材料为氧化物、氮化物、碳化物或其组合物的绝缘材料，例如为氮化硅、氧化硅、氧化铝、氧化镁、氮化铝、或氟化镁。\n\n[0064]所述阳极104可以是反射型阳极104，例如：铟锡氧化物(I TO)/银(Ag)/铟锡氧化物。所述阴极107可以是透明型阴极或半透明型阴极，例如：镁银(MgAg)合金薄层。\n\n[0065]所述像素限定层105分隔所述有机发光二极管106，以界定多个像素。\n\n[0066]所述有机发光二极管106可以包括发光层、空穴传输层及电子传输。所述发光层可以包括任何已知的有机电致发光材料，包括但不限于：基于聚合物的材料、基于小分子的材料和基于树枝状物的材料。所述空穴传输层及所述电子传输层、可以采用任何传统的材料，这取决于所用有机电致发光材料的类型。\n\n[0067]所述薄膜封装层108可以是氧化硅及/或氮氧化硅的叠层结构。\n\n[0068]所述盖板114(如图1所示)可设有彩色滤膜111、112、113，以形成多个子像素。所述彩色滤膜111、112、113可选自于由蓝色滤膜111、红色滤膜112及绿色滤膜113所组成的群组。所述黑色矩阵110与所述彩色滤膜111、112、113间隔设置，以避免不同色光发生散射或折射而相互混合。\n\n[0069]请参照图3，图3为本发明的第一实施例的量子点显示面板的光耦合输出透镜的制造方法的流程图。本发明提供了一种量子点显示面板10的光耦合输出透镜的制造方法，所述制造方法包括以下多个步骤：\n\n[0070]S10：将三羟甲基丙烷三(3-巯基丙酸酯)及三乙二醇二乙烯基醚以2：3的摩尔比混合；\n\n[0071]S20：加入紫外自由基引发剂，形成光耦合输出透镜的材料组成物；及\n\n[0072]S30：将所述材料组成物设置在量子点显示面板10的薄膜封装层108上，并对所述材料组成物进行紫外光固化工序，形成光耦合输出透镜201、202、203。\n\n[0073]在本发明的一实施例中，在所述材料组成物中可加入多个量子点204、205(请参见图2)，所述多个量子点204、205的质量比例为2至10％。三羟甲基丙烷三(3-巯基丙酸酯)、三乙二醇二乙烯基醚及多个量子点204、205是通过溶液共混制备而成。\n\n[0074]在本发明的一实施例中，可以将所述多个量子点204、205与光刻胶预先共混，所述多个量子点204、205与所述光刻胶溶质质量比例为2％或12％。\n\n[0075]请参照图4至图5，图4为本发明的第二实施例的量子点显示面板的光耦合输出透镜的制造方法的流程图，图5为根据本发明的第二实施例的所述制造方法对光耦合输出透镜201的材料组成物进行喷墨打印后的示意图。\n\n[0076]图4至图5示出了在本发明的第二实施例的光耦合输出结构20，其中所述光耦合输出透镜201的制造方法包括：在薄膜封装层108上以打印(或转印)方式提供所述光耦合输出组成物。所述光耦合输出透镜201的制造方法具体包括以下多个步骤：\n\n[0077]S301：将三羟甲基丙烷三(3-巯基丙酸酯)、三乙二醇二乙烯基醚、紫外自由基引发剂、(可选地)多个量子点204、205(请参见图2)及(可选地)光刻胶共混配制成打印墨水；及\n\n[0078]S302：如图5所示，在薄膜封装层108上喷墨打印提供所述打印墨水的半球形液滴，最后经紫外光(图5的箭头)固化后形成光耦合输出透镜201。若是使用转印方式，则先在一转印轮或转印板的表面上喷墨打印提供打印墨水的半球形液滴，经紫外光局部固化后，转印至所述薄膜封装层108上，最后经紫外光完全固化后，同样可在所述薄膜封装层108上形成光耦合输出透镜201。\n\n[0079]请参照图6至图9，图6为本发明的第三实施例的量子点显示面板的光耦合输出透镜的制造方法的流程图，图7为根据本发明的第三实施例的所述制造方法制备一光耦合输出层的示意图，图8为根据本发明的第三实施例的所述制造方法对所述光耦合输出层进行图像化处理后的示意图，图9为根据本发明的第三实施例的所述制造方法对所述光耦合输出层进行热加工处理后的示意图。\n\n[0080]图7至图9示出了本发明的第三实施例的光耦合输出结构20，其中所述光耦合输出透镜201的制造方法包括：以光刻方式在薄膜封装层108上依次经涂布、烘干、曝光、显影、加热(或通过打印/转印、固化)等后形成透镜阵列，具体步骤如下：\n\n[0081]S401：如图7所示，在薄膜封装层108上涂布所述预混有光刻胶及(可选地)多个量子点204、205(请参见图2)的材料组成物并进行烘干工序及紫外光固化，形成光耦合输出层200。此步骤可重复3次，以分别在红、绿、蓝子像素预定位置上形成含有红色发光量子点204、绿色发光量子点205、不含有量子点204、205的光耦合输出层200。\n\n[0082]S402：如图8所示，以光刻的方式对所述光耦合输出层200进行曝光及显影的图案化处理(图8的箭头)，以形成所需的所述光耦合输出棱镜202。\n\n[0083]S403：如图9所示，对所述光耦合输出棱镜202进行热加工处理，例如：在80至100℃下进行热加工处理，使所述光耦合输出棱镜202适当受热形变，形成所需的形状，例如：半球型、棱镜状或光栅等。\n\n[0084]上述光刻工艺为构图工艺的一种,例如可以包括：预处理、形成底膜、涂覆光刻胶、烘烤、曝光、显影、刻蚀等步骤。例如，预处理一般包括：湿法清洗、去离子水清洗、脱水烘焙等步骤；例如，形成底膜可以是通过气相沉积、磁控溅射等方法来实现；例如，涂覆光刻胶可以通过静态涂胶、或动态涂胶来实现；烘烤可以用于去除光刻胶中的溶剂或者显影后的溶剂。此外，例如，光刻工艺还可以包括：坚膜烘焙、显影检查等步骤。本文不限定形成白色光阻层和黑色光阻层时所使用的光刻工艺中的步骤以及各步骤的使用次数，以能够形成白色光阻层和黑色光阻层为准。例如，光刻工艺也可以包括上述步骤中的几种，例如包括涂覆光刻胶、曝光、显影等步骤。\n\n[0085]与现有技术相比较，本发明的量子点显示面板中的光耦合输出透镜的材料组成物可以通过涂布、烘干、曝光、显影、加热(或通过打印/转印、固化)后形成光耦合输出透镜，所述光耦合输出透镜可增加光耦合输出系数，提高有机发光二极管的发光效率。另一方面，所述光耦合输出透镜中的量子点，可吸收由有机发光二极管所发出的白光中的短波长成分，发射出红光或绿光。对红子像素或绿子像素的亮度有补强作用，使屏幕更加节能，亮度更高，色域更广，提高光取出率。本发明的量子点显示面板，以有机发光二极管来激发量子点发光，量子点具有发光光谱集中及色纯度高等优点，可以大幅度提高色彩的饱和度及色域。此外，三羟甲基丙烷三(3-巯基丙酸酯)及三乙二醇二乙烯基醚这两个单体毒性小，对打印机喷头腐蚀性低，粘度适合打印工序，并且可以使量子点均匀分散，所形成的光耦合输出透镜具有良好透光性及稳定性。\n\n[0086]可以理解，本发明中的特定特征，为清楚起见，在分开的实施例的内文中描述，也可以在单一实施例的组合中提供。相反地，本发明中，为简洁起见，在单一实施例的内文中所描述的各种特征，也可以分开地、或者以任何合适的子组合、或者在适用于本发明的任何其他描述的实施例中提供。在各种实施例的内文中所描述的特定特征，并不被认为是那些实施方案的必要特征，除非该实施例没有那些元素就不起作用。\n\n[0087]虽然本发明结合其具体实施例而被描述，应该理解的是，许多替代、修改及变化对于那些本领域的技术人员将是显而易见的。因此，其意在包含落入所附权利要求书的范围内的所有替代、修改及变化。', '技术领域\n\n[0001]本申请有关于显示技术领域，特别是有关于一种用于量子点显示面板的光耦合输出透镜的材料组成物及制造方法。\n\n背景技术\n\n[0002]有机发光二极管(OLED)拥有自发光，对比度高及可制作成柔性、弯曲的产品的优点，是非常具有潜力的显示技术。然而，OLED以白光为底光，OLED需要通过设置滤光片，并通过颜色组合呈现出我们肉眼可见的绚丽色彩。而OLED的高强度，则依赖于通过电流的大小，电流越大，电子携带的能量就越大，所产生的光亮度就越高。因此，OLED具有工作温度高、耗能、亮度低、色域有限等缺点。\n\n[0003]故，有必要提供一种量子点有机发光二极管显示面板及其制造方法，以解决现有技术所存在的问题。\n\n发明内容\n\n[0004]有鉴于此，本发明提供一种量子点有机发光二极管显示面板及其制造方法，以解决现有技术所存在的工作温度高、耗能、亮度低、色域有限等问题。\n\n[0005]本发明的主要目的在于提供一种光耦合输出透镜的材料组成物，其可以通过涂布、烘干、曝光、显影、加热(或通过打印/转印、固化)后形成光耦合输出透镜，所述光耦合输出透镜可增加光耦合输出系数，提高有机发光二极管的发光效率。另一方面，所述光耦合输出透镜中的量子点，可吸收由有机发光二极管所发出的白光中的短波长成分，发射出红光或绿光。对红子像素或绿子像素的亮度有补强作用，使屏幕更加节能，亮度更高，色域更广。\n\n[0006]本发明的次要目的在于提供一种量子点有机发光二极管显示面板，以有机发光二极管来激发量子点发光，量子点具有发光光谱集中及色纯度高等优点，可以大幅度提高色彩的饱和度及色域。此外，在有机发光二极管的外部还可设置微结构(例如：棱镜、半球型透镜、光栅等)，可显着提高光取出率。\n\n[0007]为达成本发明的前述目的，本发明一实施例提供一种用于量子点显示面板的光耦合输出透镜的材料组成物，所述光耦合输出透镜的材料组成物包括：\n\n[0008]三羟甲基丙烷三(3-巯基丙酸酯)；\n\n[0009]三乙二醇二乙烯基醚；及\n\n[0010]紫外自由基引发剂；\n\n[0011]其中三羟甲基丙烷三(3-巯基丙酸酯)与三乙二醇二乙烯基醚的摩尔比为2：3，通过紫外光固化形成光耦合输出透镜。\n\n[0012]在本发明的一实施例中，所述材料组成物被配制成打印墨水，经固化后形成半球形的光耦合输出透镜。\n\n[0013]在本发明的一实施例中，所述材料组成物还包括：多个量子点，所述多个量子点吸收白光中的短波长，发射出红光或绿光。\n\n[0014]在本发明的一实施例中，所述材料组成物还包括：光刻胶，所述量子点与所述光刻胶的溶质的质量比例为2％至12％。\n\n[0015]在本发明的一实施例中，所述量子点有机发光二极管显示面板还包括：封装层，所述光耦合输出透镜为半球型，所述光耦合输出透镜呈阵列排列在所述封装层上。\n\n[0016]在本发明的一实施例中，所述光耦合输出透镜的底部直径为30至100微米之间，所述光耦合输出透镜的高度为20至80微米之间。\n\n[0017]再者，本发明另一实施例另提供一种量子点显示面板的光耦合输出透镜的制造方法，所述制造方法包括以下多个步骤：\n\n[0018]将三羟甲基丙烷三(3-巯基丙酸酯)及三乙二醇二乙烯基醚以2：3的摩尔比混合；\n\n[0019]加入紫外自由基引发剂，形成光耦合输出透镜的材料组成物；及\n\n[0020]将所述材料组成物设置在量子点显示面板的薄膜封装层上，并对所述材料组成物进行紫外光固化工序，形成光耦合输出透镜。在本发明的一实施例中，\n\n[0021]在本发明的一实施例中，所述制造方法还包括：\n\n[0022]将三羟甲基丙烷三(3-巯基丙酸酯)、三乙二醇二乙烯基醚、紫外自由基引发剂、多个量子点共混配制成打印墨水；\n\n[0023]在所述薄膜封装层上打印或转印所述打印墨水；及\n\n[0024]经紫外光固化后形成所述光耦合输出透镜。\n\n[0025]在本发明的一实施例中，所述制造方法还包括：在所述材料组成物中加入多个量子点及光刻胶，其中所述多个量子点与所述光刻胶的溶质的质量比例为2％至12％。\n\n[0026]在本发明的一实施例中，所述制造方法还包括：对所述光耦合输出透镜在80至100℃下进行热加工处理，所述光耦合输出透镜受热形变形成半球型。\n\n[0027]与现有技术相比较，本发明的光耦合输出透镜的材料组成物可以通过涂布、烘干、曝光、显影、加热(或通过打印/转印、固化)后形成光耦合输出透镜，所述光耦合输出透镜可增加光耦合输出系数，提高有机发光二极管的发光效率。另一方面，所述光耦合输出透镜中的量子点，可吸收由有机发光二极管所发出的白光中的短波长成分，发射出红光或绿光。对红子像素或绿子像素的亮度有补强作用，使屏幕更加节能，亮度更高，色域更广，提高光取出率。本发明的量子点有机发光二极管显示面板，以有机发光二极管来激发量子点发光，量子点具有发光光谱集中及色纯度高等优点，可以大幅度提高色彩的饱和度及色域。此外，三羟甲基丙烷三(3-巯基丙酸酯)及三乙二醇二乙烯基醚这两个单体毒性小，对打印机喷头腐蚀性低，粘度适合打印工序，并且可以使量子点均匀分散，所形成的光耦合输出透镜具有良好透光性及稳定性。\n\n附图说明\n\n[0028]为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下。\n\n[0029]图1为本发明的第一实施例的量子点显示面板的结构示意图。\n\n[0030]图2为本发明的第一实施例的量子点显示面板的发光示意图。\n\n[0031]图3为本发明的第一实施例的量子点显示面板的光耦合输出透镜的制造方法的流程图。\n\n[0032]图4为本发明的第二实施例的量子点显示面板的光耦合输出透镜的制造方法的流程图。\n\n[0033]图5为根据本发明的第二实施例的所述制造方法对光耦合输出透镜201的材料组成物进行喷墨打印后的示意图。\n\n[0034]图6为本发明的第三实施例的量子点显示面板的光耦合输出透镜的制造方法的流程图。\n\n[0035]图7为根据本发明的第三实施例的所述制造方法制备一光耦合输出层的示意图。\n\n[0036]图8为根据本发明的第三实施例的所述制造方法对所述光耦合输出层进行图像化处理后的示意图。\n\n[0037]图9为根据本发明的第三实施例的所述制造方法对所述光耦合输出层进行热加工处理后的示意图。\n\n具体实施方式\n\n[0038]以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。再者，本发明所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧面、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。\n\n[0039]本文所用术语“包含”、“具有”及其词形变化是指“包含但不限于”。\n\n[0040]本文所用术语“一”、“一个”及“至少一”包含复数引用，除非上下文另有明确规定。例如，术语“一处理模组”或“至少一处理模组”可以包含多个处理模组，包含其组合物。\n\n[0041]本文所用术语“多个”、“数个”除另有说明外皆可选自二个、三个或以上，而“至少一个”除另有说明外皆可选自一个、二个、三个或以上，于此合先叙明。\n\n[0042]本文中所揭露的大小及数值不应意图被理解为严格限于所述精确数值。相反的，除非另外指明，各种大小旨在表示所引用的数值以及功能上与所述数值相同的范围。例如所揭露的大小为“10微米”是指“约10微米”。\n\n[0043]请参照图1至图2，图1为本发明的第一实施例的量子点显示面板的结构示意图，图2为本发明的第一实施例的量子点显示面板的发光示意图。\n\n[0044]所述量子点显示面板10包括：光耦合输出透镜201。所述量子点显示面板10可以是量子点有机发光二极管显示面板。\n\n[0045]在本发明的第一实施例中，所述量子点显示面板10还可包括：基底101、薄膜晶体管(TFT)阵列102、平坦化层103、阳极104、像素限定层105、有机发光二极管106、阴极107、薄膜封装层108、黑色矩阵110及盖板114，所述多个组件依次形成在基底101上。\n\n[0046]所述光耦合输出透镜201的材料组成物包括：三羟甲基丙烷三(3-巯基丙酸酯)、三乙二醇二乙烯基醚、紫外自由基引发剂；其中三羟甲基丙烷三(3-巯基丙酸酯)与三乙二醇二乙烯基醚的摩尔比为2：3，通过紫外光固化形成所述光耦合输出透镜。\n\n[0047]所述三羟甲基丙烷三(3-巯基丙酸酯)及所述三乙二醇二乙烯基醚可以通过任何已知的制造方法取得或在商业上取得。\n\n[0048]所述紫外自由基引发剂可以是1-羟基环己基苯基甲酮，其可以通过任何已知的制造方法取得或在商业上取得。所述紫外自由基引发剂的质量比例为2％，所述紫外自由基引发剂可以是1-羟基环己基苯基甲酮。\n\n[0049]所述基底101及所述盖板114可以是透明绝缘材料，例如：玻璃、塑料或陶瓷材料的透明绝缘材料。若为塑料基板，其材料例如为聚乙烯对苯二甲酯、聚酯、聚碳酸酯、聚丙烯酸酯或是聚苯乙烯。\n\n[0050]如图2所示，所述材料组成物设置在所述薄膜晶体管阵列102上，具体地，在所述封装层108上，所述材料组成物可以以阵列排列在各个像素上，增强由有机发光二极管106发出的白光301的强度。\n\n[0051]所述材料组成物还可包括：多个量子点204、205，所述多个量子点204、205的质量比例为2至10％。\n\n[0052]在本发明的第一实施例中，所述多个量子点204、205可以是红色发光量子点或绿色发光量子点。在本发明的另一实施例中，所述多个量子点204、205可以是红色量子点或绿色量子点。或者，在本发明的另一实施例中，所述多个量子点204、205吸收白光中的短波长，发射出红光或绿光。\n\n[0053]所述具有红色发光量子点或红色量子点的所述光耦合输出透镜201为红色光耦合输出透镜202，所述具有绿色发光量子点或绿色量子点的所述光耦合输出透镜201为绿色光耦合输出透镜203。\n\n[0054]在本发明的一实施例中，所述光耦合输出透镜201的材料组成物为透明。\n\n[0055]在本发明的另一实施例中，所述光耦合输出透镜201过滤由有机发光二极管106发出的白光，仅允许蓝光通过，而所述光耦合输出透镜201的材料组成物与所述多个量子点204、205混合后允许红光302或绿光303通过。\n\n[0056]在本发明的另一实施例中，通过调整所述量子点204、205的半径，使所述量子点204、205发出红光302或绿光303。所述量子点204、205的半径越小，则发光的波长越短(蓝移)，所述量子点204、205的半径越大，则发光的波长越长(红移)。\n\n[0057]在本发明的另一实施例中，所述量子点204、205适于吸收具有第一光谱的入射光，并将所吸收的所述入射光重新发射为具有第二光谱的出射光。例如：所述入射光为白光，所述出射光为红光或绿光。例如：所述入射光为蓝光，所述出射光为红光或绿光。\n\n[0058]所述多个量子点204、205可以通过任何已知的制造方法取得或在商业上取得，例如：CdSe量子点、ZnS量子点、CdTe量子点、PbTe量子点、ZnSe量子点、Si量子点、Ge量子点或PbSe量子点。\n\n[0059]所述光耦合输出透镜的材料组成物被配制成打印墨水，经固化后形成半球形的光耦合输出透镜201。所述光耦合输出透镜201的底部的直径为30至100微米，高度为20至80微米之间，所述直径及所述高度可按照需求调整工艺条件。\n\n[0060]所述光耦合输出透镜的材料组成物还包括：光刻胶，所述量子点204、205与所述光刻胶的溶质质量比例为2％至12％。\n\n[0061]所述基板可以是透明绝缘材料，例如玻璃、塑料或陶瓷材料的透明绝缘材料。若为塑料基板，其材料例如为聚乙烯对苯二甲酯、聚酯、聚碳酸酯、聚丙烯酸酯或是聚苯乙烯。\n\n[0062]所述薄膜晶体管阵列102可选自于由低温多晶硅薄膜晶体管(LTPS-TFT)、非晶硅薄膜晶体管(a-Si：HTFT)及有机薄膜晶体管(OTFT)组成的群组。\n\n[0063]所述平坦化层103的适当材料为氧化物、氮化物、碳化物或其组合物的绝缘材料，例如为氮化硅、氧化硅、氧化铝、氧化镁、氮化铝、或氟化镁。\n\n[0064]所述阳极104可以是反射型阳极104，例如：铟锡氧化物(I TO)/银(Ag)/铟锡氧化物。所述阴极107可以是透明型阴极或半透明型阴极，例如：镁银(MgAg)合金薄层。\n\n[0065]所述像素限定层105分隔所述有机发光二极管106，以界定多个像素。\n\n[0066]所述有机发光二极管106可以包括发光层、空穴传输层及电子传输。所述发光层可以包括任何已知的有机电致发光材料，包括但不限于：基于聚合物的材料、基于小分子的材料和基于树枝状物的材料。所述空穴传输层及所述电子传输层、可以采用任何传统的材料，这取决于所用有机电致发光材料的类型。\n\n[0067]所述薄膜封装层108可以是氧化硅及/或氮氧化硅的叠层结构。\n\n[0068]所述盖板114(如图1所示)可设有彩色滤膜111、112、113，以形成多个子像素。所述彩色滤膜111、112、113可选自于由蓝色滤膜111、红色滤膜112及绿色滤膜113所组成的群组。所述黑色矩阵110与所述彩色滤膜111、112、113间隔设置，以避免不同色光发生散射或折射而相互混合。\n\n[0069]请参照图3，图3为本发明的第一实施例的量子点显示面板的光耦合输出透镜的制造方法的流程图。本发明提供了一种量子点显示面板10的光耦合输出透镜的制造方法，所述制造方法包括以下多个步骤：\n\n[0070]S10：将三羟甲基丙烷三(3-巯基丙酸酯)及三乙二醇二乙烯基醚以2：3的摩尔比混合；\n\n[0071]S20：加入紫外自由基引发剂，形成光耦合输出透镜的材料组成物；及\n\n[0072]S30：将所述材料组成物设置在量子点显示面板10的薄膜封装层108上，并对所述材料组成物进行紫外光固化工序，形成光耦合输出透镜201、202、203。\n\n[0073]在本发明的一实施例中，在所述材料组成物中可加入多个量子点204、205(请参见图2)，所述多个量子点204、205的质量比例为2至10％。三羟甲基丙烷三(3-巯基丙酸酯)、三乙二醇二乙烯基醚及多个量子点204、205是通过溶液共混制备而成。\n\n[0074]在本发明的一实施例中，可以将所述多个量子点204、205与光刻胶预先共混，所述多个量子点204、205与所述光刻胶溶质质量比例为2％或12％。\n\n[0075]请参照图4至图5，图4为本发明的第二实施例的量子点显示面板的光耦合输出透镜的制造方法的流程图，图5为根据本发明的第二实施例的所述制造方法对光耦合输出透镜201的材料组成物进行喷墨打印后的示意图。\n\n[0076]图4至图5示出了在本发明的第二实施例的光耦合输出结构20，其中所述光耦合输出透镜201的制造方法包括：在薄膜封装层108上以打印(或转印)方式提供所述光耦合输出组成物。所述光耦合输出透镜201的制造方法具体包括以下多个步骤：\n\n[0077]S301：将三羟甲基丙烷三(3-巯基丙酸酯)、三乙二醇二乙烯基醚、紫外自由基引发剂、(可选地)多个量子点204、205(请参见图2)及(可选地)光刻胶共混配制成打印墨水；及\n\n[0078]S302：如图5所示，在薄膜封装层108上喷墨打印提供所述打印墨水的半球形液滴，最后经紫外光(图5的箭头)固化后形成光耦合输出透镜201。若是使用转印方式，则先在一转印轮或转印板的表面上喷墨打印提供打印墨水的半球形液滴，经紫外光局部固化后，转印至所述薄膜封装层108上，最后经紫外光完全固化后，同样可在所述薄膜封装层108上形成光耦合输出透镜201。\n\n[0079]请参照图6至图9，图6为本发明的第三实施例的量子点显示面板的光耦合输出透镜的制造方法的流程图，图7为根据本发明的第三实施例的所述制造方法制备一光耦合输出层的示意图，图8为根据本发明的第三实施例的所述制造方法对所述光耦合输出层进行图像化处理后的示意图，图9为根据本发明的第三实施例的所述制造方法对所述光耦合输出层进行热加工处理后的示意图。\n\n[0080]图7至图9示出了本发明的第三实施例的光耦合输出结构20，其中所述光耦合输出透镜201的制造方法包括：以光刻方式在薄膜封装层108上依次经涂布、烘干、曝光、显影、加热(或通过打印/转印、固化)等后形成透镜阵列，具体步骤如下：\n\n[0081]S401：如图7所示，在薄膜封装层108上涂布所述预混有光刻胶及(可选地)多个量子点204、205(请参见图2)的材料组成物并进行烘干工序及紫外光固化，形成光耦合输出层200。此步骤可重复3次，以分别在红、绿、蓝子像素预定位置上形成含有红色发光量子点204、绿色发光量子点205、不含有量子点204、205的光耦合输出层200。\n\n[0082]S402：如图8所示，以光刻的方式对所述光耦合输出层200进行曝光及显影的图案化处理(图8的箭头)，以形成所需的所述光耦合输出棱镜202。\n\n[0083]S403：如图9所示，对所述光耦合输出棱镜202进行热加工处理，例如：在80至100℃下进行热加工处理，使所述光耦合输出棱镜202适当受热形变，形成所需的形状，例如：半球型、棱镜状或光栅等。\n\n[0084]上述光刻工艺为构图工艺的一种,例如可以包括：预处理、形成底膜、涂覆光刻胶、烘烤、曝光、显影、刻蚀等步骤。例如，预处理一般包括：湿法清洗、去离子水清洗、脱水烘焙等步骤；例如，形成底膜可以是通过气相沉积、磁控溅射等方法来实现；例如，涂覆光刻胶可以通过静态涂胶、或动态涂胶来实现；烘烤可以用于去除光刻胶中的溶剂或者显影后的溶剂。此外，例如，光刻工艺还可以包括：坚膜烘焙、显影检查等步骤。本文不限定形成白色光阻层和黑色光阻层时所使用的光刻工艺中的步骤以及各步骤的使用次数，以能够形成白色光阻层和黑色光阻层为准。例如，光刻工艺也可以包括上述步骤中的几种，例如包括涂覆光刻胶、曝光、显影等步骤。\n\n[0085]与现有技术相比较，本发明的量子点显示面板中的光耦合输出透镜的材料组成物可以通过涂布、烘干、曝光、显影、加热(或通过打印/转印、固化)后形成光耦合输出透镜，所述光耦合输出透镜可增加光耦合输出系数，提高有机发光二极管的发光效率。另一方面，所述光耦合输出透镜中的量子点，可吸收由有机发光二极管所发出的白光中的短波长成分，发射出红光或绿光。对红子像素或绿子像素的亮度有补强作用，使屏幕更加节能，亮度更高，色域更广，提高光取出率。本发明的量子点显示面板，以有机发光二极管来激发量子点发光，量子点具有发光光谱集中及色纯度高等优点，可以大幅度提高色彩的饱和度及色域。此外，三羟甲基丙烷三(3-巯基丙酸酯)及三乙二醇二乙烯基醚这两个单体毒性小，对打印机喷头腐蚀性低，粘度适合打印工序，并且可以使量子点均匀分散，所形成的光耦合输出透镜具有良好透光性及稳定性。\n\n[0086]可以理解，本发明中的特定特征，为清楚起见，在分开的实施例的内文中描述，也可以在单一实施例的组合中提供。相反地，本发明中，为简洁起见，在单一实施例的内文中所描述的各种特征，也可以分开地、或者以任何合适的子组合、或者在适用于本发明的任何其他描述的实施例中提供。在各种实施例的内文中所描述的特定特征，并不被认为是那些实施方案的必要特征，除非该实施例没有那些元素就不起作用。\n\n[0087]虽然本发明结合其具体实施例而被描述，应该理解的是，许多替代、修改及变化对于那些本领域的技术人员将是显而易见的。因此，其意在包含落入所附权利要求书的范围内的所有替代、修改及变化。');
INSERT INTO `os_patent_instruction_text` VALUES (10739, 23793, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管转移装置及微发光二极管转移方法。\n\n背景技术\n\n[0002]微发光二极管(micro light emitting diode,Micro LED)显示装置为新一代显示技术，其结构是微型化LED阵列，即在一基板上集成的高密度微小尺寸的LED阵列，故微LED技术可视为LED微缩化及矩阵化技术。\n\n[0003]微发光二极管应用于显示装置中时，需要去掉位于LED底部的基板，然后再通过巨量转移的方式将微发光二极管转移至抗拉伸有机基材。要进行快速的巨量选择性转移，可以通过分子间作用力，利用结构性转移头进行转移。但结构性转移头的制作复杂，而且只能够进行固定位置的微发光二极管器件的阵列转移。在实际生产中，阵列排布并且数量巨多的微发光二极管中存在缺陷的微发光二极管的位置是不确定的。因此，如何对巨量的微发光二极管进行选择性转移是目前实现最终良率提升和成本降低的关键。\n\n[0004]综上所述，现有微发光二极管转移装置存在无法实现对巨量的微发光二极管进行选择性转移的问题。故，有必要提供一种微发光二极管转移装置及微发光二极管转移方法来改善这一缺陷。\n\n发明内容\n\n[0005]本揭示实施例提供一种微发光二极管转移装置及微发光二极管转移方法，用于解决现有微发光二极管转移装置存在无法实现对巨量的微发光二极管进行选择性转移的问题。\n\n[0006]本揭示实施例提供一种微发光二极管转移装置，包括：\n\n[0007]固持部件，用于固持转移基板；\n\n[0008]光源，用于提供面状光线；以及\n\n[0009]液晶光阀，设置于所述面状光线的传输路径上，所述液晶光阀包括多个子光阀，所述子光阀与所述转移基板上的微发光二极管相对应。\n\n[0010]根据本揭示一实施例，所述微发光二极管转移装置还包括吸附部件，所述吸附部件用于吸附并转移目标基板上不合格的微发光二极管。\n\n[0011]根据本揭示一实施例，所述液晶光阀包括相对设置的第一基板和第二基板，所述第一基板和所述第二基板之间设有交叉设置的光阻挡墙，相邻所述光阻挡墙与所述第一基板和所述第二基板形成所述子光阀，所述子光阀内填充有液晶。\n\n[0012]根据本揭示一实施例，所述第一基板靠近所述第二基板一侧设有第一驱动电极，所述第二基板靠近所述第一基板一侧设有第二驱动电极，所述第一电极和所述第二电极的材料均为透明导电材料。\n\n[0013]根据本揭示一实施例，所述第二驱动电极的驱动方式包括主动矩阵(activematrix,AM)驱动方式或被动矩阵(passive matrix,PM)驱动方式。\n\n[0014]根据本揭示一实施例，所述第一基板远离所述第二基板一侧设有第一偏光片，所述第二基板远离所述第一基板一侧设有第二偏光片，所述第一偏光片和所述第二偏光片均为金属线栅型偏光片。\n\n[0015]根据本揭示一实施例，所述光源包括紫外线光源或红外线光源。\n\n[0016]本揭示实施例还提供一种微发光二极管转移方法，采用如上述的微发光二极管转移装置，所述微发光二极管转移方法包括：\n\n[0017]提供转移基板，所述转移基板一侧设有光敏胶层，多个微发光二极管通过所述光敏胶层阵列排布于所述转移基板上；以及\n\n[0018]利用光源通过液晶光阀对所述转移基板上位于目标区域内的所述光敏胶层进行照射，以减小所述光敏胶层的粘性，使得所述微发光二极管脱离，并被目标基板粘附。\n\n[0019]根据本揭示一实施例，所述目标区域为所述目标基板上被拔除的不合格微发光二极管的区域，所述制作方法还包括：\n\n[0020]进行转移前，对所述目标基板进行测试，以检测出所述目标基板上不合格的微发光二极管；\n\n[0021]通过吸附部件吸附并转移不合格的所述微发光二极管。\n\n[0022]根据本揭示一实施例，所述光敏胶层的材料包括紫外线光敏胶或红外线光敏胶。\n\n[0023]本揭示实施例的有益效果：本揭示实施例通过在微发光二极管转移装置中增加液晶光阀，所述液晶光阀包括多个与转移基板上的微发光二极管相对应的子光阀，通过控制子光阀的开启和关闭对穿过液晶光阀的光线进行过滤，以对转移基板进行选择性照射，使得被照射部分的微发光二极管因光敏胶粘性减弱从转移基板脱离，并粘附至目标基板上，实现对巨量的微发光二极管进行选择性转移的技术效果。\n\n附图说明\n\n[0024]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是揭示的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0025]图1为本揭示实施例提供的微发光二极管转移装置的截面结构示意图；\n\n[0026]图2为本揭示实施例提供的微发光二极管转移方法的流程示意图；\n\n[0027]图3为本揭示实施例提供的转移基板和目标基板的截面结构示意图；\n\n[0028]图4为本揭示实施例提供的目标基板的截面结构示意图。\n\n具体实施方式\n\n[0029]以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。\n\n[0030]下面结合附图和具体实施例对本揭示做进一步的说明：\n\n[0031]本揭示实施例提供一种微发光二极管转移装置，下面结合图1进行详细说明。如图1所示，图1为本揭示实施例提供的微发光二极管转移装置100的结构示意图，所述微发光二极管转移装置100包括固持部件11、光源12和液晶光阀13。所述固持部件11用于固持转移基板20，所述光源12用于提供面状光线，所述液晶光阀13设置于所述面状光线的传输路径上，用于对所述光源12发出的光线进行过滤，以对所述转移基板20进行选择性照射。\n\n[0032]所述转移基板20一侧设有光敏胶层21，微发光二极管22通过光敏胶层21粘附于转移基板上，光源12发出的光线通过液晶光阀13照射至光敏胶层21上，可以使光敏胶层21的光敏胶粘性降低，使相应微发光二极管22脱离转移基板20粘附至目标基板30上。\n\n[0033]如图1所示，所述液晶光阀13包括相对设置的第一基板131和第二基板132，所述第一基板131和所述第二基板132之间设有交叉设置的光阻挡墙133，相邻所述光阻挡墙133与所述第一基板131和所述第二基板132构成子光阀134，所述子光阀134内填充有液晶135，所述子光阀134与所述转移基板20上的微发光二极管22相对应。通过对子光阀的开启和关闭，能够实现光线的通过和阻挡，从而对转移基板20的光敏胶层21进行选择性照射。光阻挡墙133能够有效阻挡光源12发出的光线在子光阀134内串扰到相邻子光阀134，提高光源12发出的光线的准直度，不影响相邻微发光二极管对应光敏胶的粘性。\n\n[0034]优选的，为提高光源12发出的光线在液晶光阀13的透过率，第一基板131和第二基板132的材料均选用透明聚酰亚胺。当然，在一些实施例中，第一基板131和第二基板132的材料也可以是其他透明材料，此处不做限制。\n\n[0035]优选的，为提高子光阀134内液晶135的响应速度，所述液晶135的种类可以选用铁电液晶、TN型液晶、OCB液晶、PVA或IPS等类型的液晶，上述种类液晶均具有较高的响应速度，以便于对子光阀134实现精确的开启和关闭控制。\n\n[0036]本揭示实施例中，第一基板131靠近第二基板132一侧设有第一驱动电极136，第二基板132靠近第一基板131的一侧设有第二驱动电极137，通电后，第一驱动电极136和第二驱动电极137之间形成电场，控制子光阀134内液晶的偏转方向，实现子光阀134的开启和关闭。\n\n[0037]优选的，为提高光源12发出的光线在液晶光阀13的透过率，所述第一驱动电极136和第二驱动电极137均为透明导电材料，例如透明金属氧化物导电材料ITO。\n\n[0038]优选的，所述第二驱动电极137的驱动方式为AM驱动方式或PM驱动方式，通过AM驱动方式或PM驱动方式可以实现对每个子光阀134进行精确的开启和关闭的控制。\n\n[0039]在本实施例中，第一基板131远离所述第二基板132一侧还设有第一偏光片138，第二基板132远离第一基板131的一侧设有与所述第一偏光片138相对应的第二偏光片139，并且所述第一偏光片138和第二偏光片139均为金属线栅型偏光片，在对光源发出的光线进行过滤的同时，还可以减少第一偏光片138和第二偏光片139对光线的吸收，提高光源12发出的光线的透过率。\n\n[0040]在本实施例中，光源12选用紫外线光源，对应的转移基板20上的光敏胶层21的材料应为紫外线光敏胶。在一些实施例中，所述光源12也可以选用红外线光源、可见光光源或激光光源，此时光敏胶层21的材料应为对应光源的光敏胶，此处不做具体限制。\n\n[0041]本揭示实施例提供的微发光二极管转移装置100适用于微发光二极管制作完成后的巨量转移，既可以对整个转移基板20的微发光二极管进行转移，也可以进行选择性的局部转移，同时还适用于巨量转移完成后，对目标基板上存在的数量众多且位置不固定的不合格微发光二极管的修复。\n\n[0042]如图1所示，所述微发光二极管转移装置还包括吸附部件14，所述吸附部件14用于吸附并转移所述目标基板30上的不合格的微发光二极管器件。当对目标基板30进行测试后，检测出不合格的微发光二极管器件，通过激光切断微发光二极管与目标基板30连接的绑脚，然后通过所述吸附部件14将不合格微发光二极管吸附并转移，此时目标基板30上形成空缺的目标区域，所述目标区域并不固定，其数量可以是一个也可以是多个，所述目标区域内的微发光二极管数量也可以是多个，转移基板20上粘附有与目标基板30上一一对应的微发光二极管22。\n\n[0043]第一驱动电极136和第二驱动电极137通电后驱动目标区域的子光阀134内的液晶发生偏转，利用光源发出的光线通过光阀13对转移基板20上与所述目标区域对应光敏胶层21进行照射，使光敏胶层21粘性减弱，转移基板21上的微发光二极管22脱离，并被目标基板30上的黏胶层31粘附，填补目标区域拔除不合格微发光二极管后的空缺，因此，利用本揭示实施例提供的微发光二极管转移装置，还可以对目标基板上位置不固定，并且巨量的微发光二极管缺陷进行快速修补，提升修补效率以及生产良率。\n\n[0044]在本揭示实施例中，吸附部件14为带有多个吸附孔的真空吸附装置，可以完成不同区域、数量众多的微发光二极管的吸附和转移。当然，在一些实施例中，所述吸附部件14也可以采用磁性吸附装置或静电吸附装置，都可以取得相同的技术效果，此处不再赘述。\n\n[0045]本揭示实施例的有益效果：本揭示实施例通过在微发光二极管转移装置中增加液晶光阀，所述液晶光阀包括多个与转移基板上的微发光二极管相对应的子光阀，利用液晶光阀对所述光源发出的光线进行过滤，以对所述转移基板进行选择性照射，使得被照射部分的微发光二极管脱离转移基板，粘附至目标基板上，从而实现对巨量微发光二极管的选择性转移以及对巨量微发光二极管的快速修补，提升修补效率、生产效率以及生产良率，降低实际生产成本。\n\n[0046]本揭示实施例还提供一种微发光二极管转移方法，并且本揭示实施例所提供的微发光二极管转移方法采用了上述实施例所提供的微发光二极管转移装置，下面结合图1至图4进行详细说明。\n\n[0047]如图2所示，图2为本揭示实施例提供的微发光二极管转移方法的流程示意图，所述方法包括：\n\n[0048]步骤S10：如图1所示，提供转移基板20，所述转移基板20一侧设有光敏胶层21，多个微发光二极管22通过所述光敏胶层22阵列排布于所述转移基板20上；以及\n\n[0049]步骤S20：利用光源12通过液晶光阀13对所述转移基板20上位于目标区域内的所述光敏胶层21进行照射，以减小所述光敏胶层21的粘性，使得所述微发光二极管22脱离，并被目标基板30上的黏胶层31粘附。\n\n[0050]如图3所示，图3为本揭示实施例提供的转移基板和目标基板的截面结构示意图，目标区域内的微发光二极管22由于与其粘结的光敏胶层22的粘性减弱而脱离转移基板20，并被目标基板30上的黏胶层31粘附，而未被光线照射部分的微发光二极管则继续保留在转移基板20上。\n\n[0051]若需要对转移基板20整面的微发光二极管22全部进行转移，则只需要通过第一驱动电极136和第二驱动电极137将液晶光阀13内的子光阀134全部开启，便能将微发光二极管22全部转移至目标基板30上，实现微发光二极管的巨量转移。\n\n[0052]本揭示实施例提供的转移方法还可适用于巨量转移完成后，对目标基板30存在的数量众多且位置不固定的不合格微发光二极管的修复。此时，目标区域为所述目标基板30上被拔除的不合格微发光二极管的区域，本揭示实施例提供的制作方法应还包括：\n\n[0053]进行转移前，对所述目标基板32进行测试，以检测出所述目标基板30上不合格的微发光二极管32；\n\n[0054]通过激光切断不合格的微发光二极管32与目标基板30连接的绑脚；\n\n[0055]通过吸附部件14吸附并转移不合格的微发光二极管32。\n\n[0056]如图4所示，图4为本揭示实施例提供的目标基板32的截面结构示意图，吸附部件14通过其上的吸附孔将不合格的微发光二极管32吸附并转移，从而在目标区域形成空缺，再通过步骤S10和步骤S20的方法，即可实现对目标区域微发光二极管的补放，完成对目标基板30的缺陷的修补。\n\n[0057]在本实施例中，光源12选用紫外线光源，对应的转移基板20上的光敏胶层21的材料应为紫外线光敏胶。在一些实施例中，所述光源12也可以选用红外线光源、可见光光源或激光光源，此时光敏胶层21的材料应为对红外线光敏胶等对应光源的光敏胶。\n\n[0058]本揭示实施例提供一种微发光二极管转移方法，通过控制光阀内多个子光阀的开启和关闭，使得光源发出的光线可以选择性的照射至转移基板的光敏胶层，使得被光线照射区域的微发光二极管转移至目标基板上，即可以实现对微发光二极管的巨量转移，又可以对巨量转移后，目标基板上存在的不合格微发光二极管数量众多、位置不固定的缺陷进行修复，可以提升生产效率、修补效率以及生产良率，降低实际生产成本。\n\n[0059]综上所述，虽然本揭示以优选实施例揭露如上，但上述优选实施例并非用以限制本揭示，本领域的普通技术人员，在不脱离本揭示的精神和范围内，均可作各种更动与润饰，因此本揭示的保护范围以权利要求界定的范围为基准。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管转移装置及微发光二极管转移方法。\n\n背景技术\n\n[0002]微发光二极管(micro light emitting diode,Micro LED)显示装置为新一代显示技术，其结构是微型化LED阵列，即在一基板上集成的高密度微小尺寸的LED阵列，故微LED技术可视为LED微缩化及矩阵化技术。\n\n[0003]微发光二极管应用于显示装置中时，需要去掉位于LED底部的基板，然后再通过巨量转移的方式将微发光二极管转移至抗拉伸有机基材。要进行快速的巨量选择性转移，可以通过分子间作用力，利用结构性转移头进行转移。但结构性转移头的制作复杂，而且只能够进行固定位置的微发光二极管器件的阵列转移。在实际生产中，阵列排布并且数量巨多的微发光二极管中存在缺陷的微发光二极管的位置是不确定的。因此，如何对巨量的微发光二极管进行选择性转移是目前实现最终良率提升和成本降低的关键。\n\n[0004]综上所述，现有微发光二极管转移装置存在无法实现对巨量的微发光二极管进行选择性转移的问题。故，有必要提供一种微发光二极管转移装置及微发光二极管转移方法来改善这一缺陷。\n\n发明内容\n\n[0005]本揭示实施例提供一种微发光二极管转移装置及微发光二极管转移方法，用于解决现有微发光二极管转移装置存在无法实现对巨量的微发光二极管进行选择性转移的问题。\n\n[0006]本揭示实施例提供一种微发光二极管转移装置，包括：\n\n[0007]固持部件，用于固持转移基板；\n\n[0008]光源，用于提供面状光线；以及\n\n[0009]液晶光阀，设置于所述面状光线的传输路径上，所述液晶光阀包括多个子光阀，所述子光阀与所述转移基板上的微发光二极管相对应。\n\n[0010]根据本揭示一实施例，所述微发光二极管转移装置还包括吸附部件，所述吸附部件用于吸附并转移目标基板上不合格的微发光二极管。\n\n[0011]根据本揭示一实施例，所述液晶光阀包括相对设置的第一基板和第二基板，所述第一基板和所述第二基板之间设有交叉设置的光阻挡墙，相邻所述光阻挡墙与所述第一基板和所述第二基板形成所述子光阀，所述子光阀内填充有液晶。\n\n[0012]根据本揭示一实施例，所述第一基板靠近所述第二基板一侧设有第一驱动电极，所述第二基板靠近所述第一基板一侧设有第二驱动电极，所述第一电极和所述第二电极的材料均为透明导电材料。\n\n[0013]根据本揭示一实施例，所述第二驱动电极的驱动方式包括主动矩阵(activematrix,AM)驱动方式或被动矩阵(passive matrix,PM)驱动方式。\n\n[0014]根据本揭示一实施例，所述第一基板远离所述第二基板一侧设有第一偏光片，所述第二基板远离所述第一基板一侧设有第二偏光片，所述第一偏光片和所述第二偏光片均为金属线栅型偏光片。\n\n[0015]根据本揭示一实施例，所述光源包括紫外线光源或红外线光源。\n\n[0016]本揭示实施例还提供一种微发光二极管转移方法，采用如上述的微发光二极管转移装置，所述微发光二极管转移方法包括：\n\n[0017]提供转移基板，所述转移基板一侧设有光敏胶层，多个微发光二极管通过所述光敏胶层阵列排布于所述转移基板上；以及\n\n[0018]利用光源通过液晶光阀对所述转移基板上位于目标区域内的所述光敏胶层进行照射，以减小所述光敏胶层的粘性，使得所述微发光二极管脱离，并被目标基板粘附。\n\n[0019]根据本揭示一实施例，所述目标区域为所述目标基板上被拔除的不合格微发光二极管的区域，所述制作方法还包括：\n\n[0020]进行转移前，对所述目标基板进行测试，以检测出所述目标基板上不合格的微发光二极管；\n\n[0021]通过吸附部件吸附并转移不合格的所述微发光二极管。\n\n[0022]根据本揭示一实施例，所述光敏胶层的材料包括紫外线光敏胶或红外线光敏胶。\n\n[0023]本揭示实施例的有益效果：本揭示实施例通过在微发光二极管转移装置中增加液晶光阀，所述液晶光阀包括多个与转移基板上的微发光二极管相对应的子光阀，通过控制子光阀的开启和关闭对穿过液晶光阀的光线进行过滤，以对转移基板进行选择性照射，使得被照射部分的微发光二极管因光敏胶粘性减弱从转移基板脱离，并粘附至目标基板上，实现对巨量的微发光二极管进行选择性转移的技术效果。\n\n附图说明\n\n[0024]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是揭示的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0025]图1为本揭示实施例提供的微发光二极管转移装置的截面结构示意图；\n\n[0026]图2为本揭示实施例提供的微发光二极管转移方法的流程示意图；\n\n[0027]图3为本揭示实施例提供的转移基板和目标基板的截面结构示意图；\n\n[0028]图4为本揭示实施例提供的目标基板的截面结构示意图。\n\n具体实施方式\n\n[0029]以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。\n\n[0030]下面结合附图和具体实施例对本揭示做进一步的说明：\n\n[0031]本揭示实施例提供一种微发光二极管转移装置，下面结合图1进行详细说明。如图1所示，图1为本揭示实施例提供的微发光二极管转移装置100的结构示意图，所述微发光二极管转移装置100包括固持部件11、光源12和液晶光阀13。所述固持部件11用于固持转移基板20，所述光源12用于提供面状光线，所述液晶光阀13设置于所述面状光线的传输路径上，用于对所述光源12发出的光线进行过滤，以对所述转移基板20进行选择性照射。\n\n[0032]所述转移基板20一侧设有光敏胶层21，微发光二极管22通过光敏胶层21粘附于转移基板上，光源12发出的光线通过液晶光阀13照射至光敏胶层21上，可以使光敏胶层21的光敏胶粘性降低，使相应微发光二极管22脱离转移基板20粘附至目标基板30上。\n\n[0033]如图1所示，所述液晶光阀13包括相对设置的第一基板131和第二基板132，所述第一基板131和所述第二基板132之间设有交叉设置的光阻挡墙133，相邻所述光阻挡墙133与所述第一基板131和所述第二基板132构成子光阀134，所述子光阀134内填充有液晶135，所述子光阀134与所述转移基板20上的微发光二极管22相对应。通过对子光阀的开启和关闭，能够实现光线的通过和阻挡，从而对转移基板20的光敏胶层21进行选择性照射。光阻挡墙133能够有效阻挡光源12发出的光线在子光阀134内串扰到相邻子光阀134，提高光源12发出的光线的准直度，不影响相邻微发光二极管对应光敏胶的粘性。\n\n[0034]优选的，为提高光源12发出的光线在液晶光阀13的透过率，第一基板131和第二基板132的材料均选用透明聚酰亚胺。当然，在一些实施例中，第一基板131和第二基板132的材料也可以是其他透明材料，此处不做限制。\n\n[0035]优选的，为提高子光阀134内液晶135的响应速度，所述液晶135的种类可以选用铁电液晶、TN型液晶、OCB液晶、PVA或IPS等类型的液晶，上述种类液晶均具有较高的响应速度，以便于对子光阀134实现精确的开启和关闭控制。\n\n[0036]本揭示实施例中，第一基板131靠近第二基板132一侧设有第一驱动电极136，第二基板132靠近第一基板131的一侧设有第二驱动电极137，通电后，第一驱动电极136和第二驱动电极137之间形成电场，控制子光阀134内液晶的偏转方向，实现子光阀134的开启和关闭。\n\n[0037]优选的，为提高光源12发出的光线在液晶光阀13的透过率，所述第一驱动电极136和第二驱动电极137均为透明导电材料，例如透明金属氧化物导电材料ITO。\n\n[0038]优选的，所述第二驱动电极137的驱动方式为AM驱动方式或PM驱动方式，通过AM驱动方式或PM驱动方式可以实现对每个子光阀134进行精确的开启和关闭的控制。\n\n[0039]在本实施例中，第一基板131远离所述第二基板132一侧还设有第一偏光片138，第二基板132远离第一基板131的一侧设有与所述第一偏光片138相对应的第二偏光片139，并且所述第一偏光片138和第二偏光片139均为金属线栅型偏光片，在对光源发出的光线进行过滤的同时，还可以减少第一偏光片138和第二偏光片139对光线的吸收，提高光源12发出的光线的透过率。\n\n[0040]在本实施例中，光源12选用紫外线光源，对应的转移基板20上的光敏胶层21的材料应为紫外线光敏胶。在一些实施例中，所述光源12也可以选用红外线光源、可见光光源或激光光源，此时光敏胶层21的材料应为对应光源的光敏胶，此处不做具体限制。\n\n[0041]本揭示实施例提供的微发光二极管转移装置100适用于微发光二极管制作完成后的巨量转移，既可以对整个转移基板20的微发光二极管进行转移，也可以进行选择性的局部转移，同时还适用于巨量转移完成后，对目标基板上存在的数量众多且位置不固定的不合格微发光二极管的修复。\n\n[0042]如图1所示，所述微发光二极管转移装置还包括吸附部件14，所述吸附部件14用于吸附并转移所述目标基板30上的不合格的微发光二极管器件。当对目标基板30进行测试后，检测出不合格的微发光二极管器件，通过激光切断微发光二极管与目标基板30连接的绑脚，然后通过所述吸附部件14将不合格微发光二极管吸附并转移，此时目标基板30上形成空缺的目标区域，所述目标区域并不固定，其数量可以是一个也可以是多个，所述目标区域内的微发光二极管数量也可以是多个，转移基板20上粘附有与目标基板30上一一对应的微发光二极管22。\n\n[0043]第一驱动电极136和第二驱动电极137通电后驱动目标区域的子光阀134内的液晶发生偏转，利用光源发出的光线通过光阀13对转移基板20上与所述目标区域对应光敏胶层21进行照射，使光敏胶层21粘性减弱，转移基板21上的微发光二极管22脱离，并被目标基板30上的黏胶层31粘附，填补目标区域拔除不合格微发光二极管后的空缺，因此，利用本揭示实施例提供的微发光二极管转移装置，还可以对目标基板上位置不固定，并且巨量的微发光二极管缺陷进行快速修补，提升修补效率以及生产良率。\n\n[0044]在本揭示实施例中，吸附部件14为带有多个吸附孔的真空吸附装置，可以完成不同区域、数量众多的微发光二极管的吸附和转移。当然，在一些实施例中，所述吸附部件14也可以采用磁性吸附装置或静电吸附装置，都可以取得相同的技术效果，此处不再赘述。\n\n[0045]本揭示实施例的有益效果：本揭示实施例通过在微发光二极管转移装置中增加液晶光阀，所述液晶光阀包括多个与转移基板上的微发光二极管相对应的子光阀，利用液晶光阀对所述光源发出的光线进行过滤，以对所述转移基板进行选择性照射，使得被照射部分的微发光二极管脱离转移基板，粘附至目标基板上，从而实现对巨量微发光二极管的选择性转移以及对巨量微发光二极管的快速修补，提升修补效率、生产效率以及生产良率，降低实际生产成本。\n\n[0046]本揭示实施例还提供一种微发光二极管转移方法，并且本揭示实施例所提供的微发光二极管转移方法采用了上述实施例所提供的微发光二极管转移装置，下面结合图1至图4进行详细说明。\n\n[0047]如图2所示，图2为本揭示实施例提供的微发光二极管转移方法的流程示意图，所述方法包括：\n\n[0048]步骤S10：如图1所示，提供转移基板20，所述转移基板20一侧设有光敏胶层21，多个微发光二极管22通过所述光敏胶层22阵列排布于所述转移基板20上；以及\n\n[0049]步骤S20：利用光源12通过液晶光阀13对所述转移基板20上位于目标区域内的所述光敏胶层21进行照射，以减小所述光敏胶层21的粘性，使得所述微发光二极管22脱离，并被目标基板30上的黏胶层31粘附。\n\n[0050]如图3所示，图3为本揭示实施例提供的转移基板和目标基板的截面结构示意图，目标区域内的微发光二极管22由于与其粘结的光敏胶层22的粘性减弱而脱离转移基板20，并被目标基板30上的黏胶层31粘附，而未被光线照射部分的微发光二极管则继续保留在转移基板20上。\n\n[0051]若需要对转移基板20整面的微发光二极管22全部进行转移，则只需要通过第一驱动电极136和第二驱动电极137将液晶光阀13内的子光阀134全部开启，便能将微发光二极管22全部转移至目标基板30上，实现微发光二极管的巨量转移。\n\n[0052]本揭示实施例提供的转移方法还可适用于巨量转移完成后，对目标基板30存在的数量众多且位置不固定的不合格微发光二极管的修复。此时，目标区域为所述目标基板30上被拔除的不合格微发光二极管的区域，本揭示实施例提供的制作方法应还包括：\n\n[0053]进行转移前，对所述目标基板32进行测试，以检测出所述目标基板30上不合格的微发光二极管32；\n\n[0054]通过激光切断不合格的微发光二极管32与目标基板30连接的绑脚；\n\n[0055]通过吸附部件14吸附并转移不合格的微发光二极管32。\n\n[0056]如图4所示，图4为本揭示实施例提供的目标基板32的截面结构示意图，吸附部件14通过其上的吸附孔将不合格的微发光二极管32吸附并转移，从而在目标区域形成空缺，再通过步骤S10和步骤S20的方法，即可实现对目标区域微发光二极管的补放，完成对目标基板30的缺陷的修补。\n\n[0057]在本实施例中，光源12选用紫外线光源，对应的转移基板20上的光敏胶层21的材料应为紫外线光敏胶。在一些实施例中，所述光源12也可以选用红外线光源、可见光光源或激光光源，此时光敏胶层21的材料应为对红外线光敏胶等对应光源的光敏胶。\n\n[0058]本揭示实施例提供一种微发光二极管转移方法，通过控制光阀内多个子光阀的开启和关闭，使得光源发出的光线可以选择性的照射至转移基板的光敏胶层，使得被光线照射区域的微发光二极管转移至目标基板上，即可以实现对微发光二极管的巨量转移，又可以对巨量转移后，目标基板上存在的不合格微发光二极管数量众多、位置不固定的缺陷进行修复，可以提升生产效率、修补效率以及生产良率，降低实际生产成本。\n\n[0059]综上所述，虽然本揭示以优选实施例揭露如上，但上述优选实施例并非用以限制本揭示，本领域的普通技术人员，在不脱离本揭示的精神和范围内，均可作各种更动与润饰，因此本揭示的保护范围以权利要求界定的范围为基准。');
INSERT INTO `os_patent_instruction_text` VALUES (10740, 23794, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种显示面板。\n\n背景技术\n\n[0002]随着科学技术的发展，终端越来越普及。屏下指纹识别技术在终端上的应用越来越广泛。目前，主流的显示技术包括液晶显示器(Liquid Crystal Display，LCD)和有机发光半导体有机发光半导体(Organic Light Emitting Diode，OLED)。其中，LCD为被动发光技术，需要通过整面背光板照射液晶实现光线的亮暗控制。\n\n[0003]而屏下指纹识别技术需要在LCD中设置红外发生器和指纹传感器，其中红外发生器的透光率几乎为零。因此，若是将红外发生器设置在背光板和光学膜片之间，则会影响到背光板的照射面积从而影响LCD的正常显示；若是将红外发生器设置在背光板的背面，则会导致指纹传感器受到背光板和光学膜片的干扰，从而导致指纹传感信号出现严重串扰，使得屏下指纹识别技术失效。\n\n发明内容\n\n[0004]本申请实施例提供了一种显示面板，可以在实现屏下指纹识别技术的情况下不影响正常显示。\n\n[0005]本申请实施例提供了一种显示面板，具有第一显示区和围绕所述第一显示区设置的第二显示区，该显示面板包括：\n\n[0006]背光模组；\n\n[0007]阵列基板，所述阵列基板与所述背光模组层叠设置，所述阵列基板上有红外发生器，所述红外发生器位于所述第一显示区；\n\n[0008]彩膜基板，所述彩膜基板与所述阵列基板相对设置，所述彩膜基板上设置有发光显示器件和指纹传感器，所述发光显示器件和所述指纹传感器位于所述第一显示区；\n\n[0009]在本申请实施例提供的显示面板中，所述红外发生器设置于所述阵列基板与所述背光模组之间。\n\n[0010]在本申请实施例提供的显示面板中，所述发光显示器件和所述指纹传感器设置于所述彩膜基板靠近所述阵列基板的一侧。\n\n[0011]在本申请实施例提供的显示面板中，所述彩膜基板上设置有多个发光显示器件和多个指纹传感器，所述多个发光显示器件和所述多个指纹传感器交错设置。\n\n[0012]在本申请实施例提供的显示面板中，所述发光显示器件设置于所述彩膜基板远离所述阵列基板的一侧。\n\n[0013]在本申请实施例提供的显示面板中，所述指纹传感器设置于所述彩膜基板靠近所述阵列基板的一侧。\n\n[0014]在本申请实施例提供的显示面板中，所述彩膜基板靠近所述阵列基板的一侧设置有多个透光孔和多个发光显示器件，所述多个透光孔和所述多个发光显示器件交错设置，所述多个透光孔设置于所述第一显示区。\n\n[0015]在本申请实施例提供的显示面板中，彩膜基板靠近所述阵列基板的一侧设置有黑色矩阵，所述黑色矩阵位于所述第一显示区，且暴露所述多个透光孔和所述多个发光显示器件。\n\n[0016]在本申请实施例提供的显示面板中，所述透光孔的直径为5微米至50微米。\n\n[0017]在本申请实施例提供的显示面板中，所述显示器件为微型发光二极管。\n\n[0018]由上，本申请实施例提供的显示面板具有第一显示区和围绕所述第一显示区设置的第二显示区，该显示面板包括背光模组、阵列基板和彩膜基板，所述阵列基板与所述背光模组层叠设置，所述阵列基板上有红外发生器，所述红外发生器位于所述第一显示区；所述彩膜基板与所述阵列基板相对设置，所述彩膜基板上设置有发光显示器件和指纹传感器，所述发光显示器件和所述指纹传感器位于所述第一显示区。本方案提供的显示面板可以在实现屏下指纹识别技术的情况下不影响正常显示。\n\n附图说明\n\n[0019]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0020]图1是本申请实施例提供的显示面板的结构示意图。\n\n[0021]图2是图1所示的显示面板在A-A’方向上的截面图。\n\n[0022]图3本申请实施例提供的传感器与发光显示器件的排布示意图。\n\n[0023]图4是图1所示的显示面板在A-A’方向上的另一截面图。\n\n[0024]图5是本申请实施例提供的透光孔与发光显示器件的排布示意图。\n\n具体实施方式\n\n[0025]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0026]本申请实施例提供了一种显示面板，以下将进行详细说明。\n\n[0027]请参阅图1，图1是本申请实施例提供的显示面板的结构示意图。该显示面板100可以包括第一显示区110和第二显示区120。其中，该第二显示区120可以围绕第一显示区110设置。\n\n[0028]其中，第一显示区110可以采用发光显示器件进行显示。第二显示区120可以采用液晶显示。\n\n[0029]需要说明的是，在本申请的描述中，术语“第一”、“第二”、“第三”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”、“第三”的特征可以明示或者隐含地包括一个或者更多个所述特征。\n\n[0030]具体的，请参阅图2，图2是图1所示的显示面板在A-A’方向上的截面图。该显示面板100可以包括阵列基板11、背光模组12和彩膜基板21。需要说明的是，该显示面板100包括但不限于上述结构。该显示面板100还可以包括其他结构，比如，框胶和液晶30等。\n\n[0031]其中，该阵列基板11与背光模组12层叠设置。该阵列基板11上设置有红外发生器111，该红外发生器111位于第一显示区110。该红外发生器111可以发出指纹识别红外光。需要说明的是，该红外发生器111的透光率几乎为零。\n\n[0032]其中，该彩膜基板21与阵列基板11相对设置。并且，在该彩膜基板21上设置有多个发光显示器件211和多个指纹传感器212。该发光显示器件211和指纹传感器212位于第一显示区110。该发光显示器件211可以自发光显示。该指纹传感器212可以识别指纹信息。\n\n[0033]在一些实施例中，该显示面板100还可以包括上偏光片22，该上偏光片22可以设置于彩膜基板21远离阵列基板11侧一侧。\n\n[0034]在一些实施例中，该发光显示器件211可以为微型发光二极管。该指纹传感器212可以是高密度的红外传感器阵列。\n\n[0035]在一些实施例中，该显示面板100还可以包括液晶30和下偏光片。该液晶30设置于阵列基板10和彩膜基板20之间。该下偏光片设置于阵列基板11远离彩膜基板21的一侧。\n\n[0036]需要说明的是，由于阵列基板11和彩膜基板21设置有液晶30。因此，指纹传感器212不会采集到从阵列基板11反射过来的红外光，只能采集从彩膜基板21反射过来的红外光。\n\n[0037]可以理解的是，本申请实施例中使用红外光进行指纹识别，由于红外光不被用户肉眼所见。因此，避免了用于在观看显示面板100显示的内容时，对显示面板100显示的内容的影响，提高了用户体验。\n\n[0038]为了避免指纹传感器212受到阵列基板11的干扰，导致指纹传感器212无法进行识别。在一些实施例中，可以将该红外发生器111设置于阵列基板11与背光模组12之间。需要说明的是，该红外发生器111完全覆盖该阵列基板11靠近背光模组12一侧的第一显示区110。\n\n[0039]可以理解的是，此时第一显示区110无法进行正常的液晶显示。由于本申请实施例在彩膜基板的第一显示区110设置有发光显示器件211，该发光显示器件211可以自发光显示。因此，本申请实施例可以在实现屏下指纹识别技术的情况下不影响显示面板100的正常显示。\n\n[0040]可以理解的是，为了避免上偏光片22对发光显示器件211的显示效果产生影响，可以将该上偏光片22位于第一显示区110的部分去除，并在该处设置透光率高的玻璃或其他透光率高的材料。\n\n[0041]在一些实施例中，发光显示器件211和指纹传感器212可以设置于彩膜基板21靠近阵列基板11的一侧。并且，由于发光显示器件211的透光率较高，像素分布相对稀疏，可以将发光显示器件211和指纹传感器212集成在一个电路板上，并将多个发光显示器件211和多个指纹传感器212交错设置，充分利用彩膜基板21的空间，进而节省显示面板100的空间，具体可以如图3所示。\n\n[0042]并且，由于指纹识别和发光显示器件211显示可以不同时进行，因此，发光显示器件211和指纹传感器212的布线可以分时复用，从而节省制造成本。\n\n[0043]请参阅图4，在一些实施例中，为了提升指纹识别的信噪比，可以将发光显示器件211设置于彩膜基板21远离所述阵列基板的一侧，并将指纹传感器设置于彩膜基板21靠近阵列基板11的一侧。\n\n[0044]在一些实施例中，为了进一步提升指纹识别的信噪比，还可以在图4所示结构的基础上进行进一步设置。具体可以如图5所示，可以在多个发光显示器件211的间隙设置透光孔213，使得多个透光孔213与多个发光显示器件211交错设置。并且，在彩膜基板21靠近阵列基板11的一侧设置黑色矩阵214。可以理解的是，该黑色矩阵214暴露多个透光孔213和多个发光显示器件211。多个透光孔213和黑色矩阵214位于第一显示区110。\n\n[0045]其中，该透光孔213的直径可以为5微米至50微米。需要说明的是，由于指纹传感器212位于该透光孔213的下方。因此，本申请实施例可以录用小孔成像进一步提升指纹识别的信噪比。\n\n[0046]由上，本申请实施例提供的显示面板100具有第一显示区110和围绕第一显示区110设置的第二显示区120，该显示面板100包括阵列基板11、背光模组12和彩膜基板21，所述阵列基板11与所述背光模组12层叠设置，所述阵列基板11上有红外发生器111，所述红外发生器111位于所述第一显示区110；所述彩膜基板21与所述阵列基板11相对设置，所述彩膜基板21上设置有发光显示器件211和指纹传感器212，所述发光显示器件211和所述指纹传感器212位于所述第一显示区110。本方案提供的显示面板100可以在实现屏下指纹识别技术的情况下不影响显示面板100正常显示。\n\n[0047]需要说明的是，在本申请实施例的描述中，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。\n\n[0048]以上对本申请实施例所提供的一种显示面板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种显示面板。\n\n背景技术\n\n[0002]随着科学技术的发展，终端越来越普及。屏下指纹识别技术在终端上的应用越来越广泛。目前，主流的显示技术包括液晶显示器(Liquid Crystal Display，LCD)和有机发光半导体有机发光半导体(Organic Light Emitting Diode，OLED)。其中，LCD为被动发光技术，需要通过整面背光板照射液晶实现光线的亮暗控制。\n\n[0003]而屏下指纹识别技术需要在LCD中设置红外发生器和指纹传感器，其中红外发生器的透光率几乎为零。因此，若是将红外发生器设置在背光板和光学膜片之间，则会影响到背光板的照射面积从而影响LCD的正常显示；若是将红外发生器设置在背光板的背面，则会导致指纹传感器受到背光板和光学膜片的干扰，从而导致指纹传感信号出现严重串扰，使得屏下指纹识别技术失效。\n\n发明内容\n\n[0004]本申请实施例提供了一种显示面板，可以在实现屏下指纹识别技术的情况下不影响正常显示。\n\n[0005]本申请实施例提供了一种显示面板，具有第一显示区和围绕所述第一显示区设置的第二显示区，该显示面板包括：\n\n[0006]背光模组；\n\n[0007]阵列基板，所述阵列基板与所述背光模组层叠设置，所述阵列基板上有红外发生器，所述红外发生器位于所述第一显示区；\n\n[0008]彩膜基板，所述彩膜基板与所述阵列基板相对设置，所述彩膜基板上设置有发光显示器件和指纹传感器，所述发光显示器件和所述指纹传感器位于所述第一显示区；\n\n[0009]在本申请实施例提供的显示面板中，所述红外发生器设置于所述阵列基板与所述背光模组之间。\n\n[0010]在本申请实施例提供的显示面板中，所述发光显示器件和所述指纹传感器设置于所述彩膜基板靠近所述阵列基板的一侧。\n\n[0011]在本申请实施例提供的显示面板中，所述彩膜基板上设置有多个发光显示器件和多个指纹传感器，所述多个发光显示器件和所述多个指纹传感器交错设置。\n\n[0012]在本申请实施例提供的显示面板中，所述发光显示器件设置于所述彩膜基板远离所述阵列基板的一侧。\n\n[0013]在本申请实施例提供的显示面板中，所述指纹传感器设置于所述彩膜基板靠近所述阵列基板的一侧。\n\n[0014]在本申请实施例提供的显示面板中，所述彩膜基板靠近所述阵列基板的一侧设置有多个透光孔和多个发光显示器件，所述多个透光孔和所述多个发光显示器件交错设置，所述多个透光孔设置于所述第一显示区。\n\n[0015]在本申请实施例提供的显示面板中，彩膜基板靠近所述阵列基板的一侧设置有黑色矩阵，所述黑色矩阵位于所述第一显示区，且暴露所述多个透光孔和所述多个发光显示器件。\n\n[0016]在本申请实施例提供的显示面板中，所述透光孔的直径为5微米至50微米。\n\n[0017]在本申请实施例提供的显示面板中，所述显示器件为微型发光二极管。\n\n[0018]由上，本申请实施例提供的显示面板具有第一显示区和围绕所述第一显示区设置的第二显示区，该显示面板包括背光模组、阵列基板和彩膜基板，所述阵列基板与所述背光模组层叠设置，所述阵列基板上有红外发生器，所述红外发生器位于所述第一显示区；所述彩膜基板与所述阵列基板相对设置，所述彩膜基板上设置有发光显示器件和指纹传感器，所述发光显示器件和所述指纹传感器位于所述第一显示区。本方案提供的显示面板可以在实现屏下指纹识别技术的情况下不影响正常显示。\n\n附图说明\n\n[0019]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0020]图1是本申请实施例提供的显示面板的结构示意图。\n\n[0021]图2是图1所示的显示面板在A-A’方向上的截面图。\n\n[0022]图3本申请实施例提供的传感器与发光显示器件的排布示意图。\n\n[0023]图4是图1所示的显示面板在A-A’方向上的另一截面图。\n\n[0024]图5是本申请实施例提供的透光孔与发光显示器件的排布示意图。\n\n具体实施方式\n\n[0025]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0026]本申请实施例提供了一种显示面板，以下将进行详细说明。\n\n[0027]请参阅图1，图1是本申请实施例提供的显示面板的结构示意图。该显示面板100可以包括第一显示区110和第二显示区120。其中，该第二显示区120可以围绕第一显示区110设置。\n\n[0028]其中，第一显示区110可以采用发光显示器件进行显示。第二显示区120可以采用液晶显示。\n\n[0029]需要说明的是，在本申请的描述中，术语“第一”、“第二”、“第三”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”、“第三”的特征可以明示或者隐含地包括一个或者更多个所述特征。\n\n[0030]具体的，请参阅图2，图2是图1所示的显示面板在A-A’方向上的截面图。该显示面板100可以包括阵列基板11、背光模组12和彩膜基板21。需要说明的是，该显示面板100包括但不限于上述结构。该显示面板100还可以包括其他结构，比如，框胶和液晶30等。\n\n[0031]其中，该阵列基板11与背光模组12层叠设置。该阵列基板11上设置有红外发生器111，该红外发生器111位于第一显示区110。该红外发生器111可以发出指纹识别红外光。需要说明的是，该红外发生器111的透光率几乎为零。\n\n[0032]其中，该彩膜基板21与阵列基板11相对设置。并且，在该彩膜基板21上设置有多个发光显示器件211和多个指纹传感器212。该发光显示器件211和指纹传感器212位于第一显示区110。该发光显示器件211可以自发光显示。该指纹传感器212可以识别指纹信息。\n\n[0033]在一些实施例中，该显示面板100还可以包括上偏光片22，该上偏光片22可以设置于彩膜基板21远离阵列基板11侧一侧。\n\n[0034]在一些实施例中，该发光显示器件211可以为微型发光二极管。该指纹传感器212可以是高密度的红外传感器阵列。\n\n[0035]在一些实施例中，该显示面板100还可以包括液晶30和下偏光片。该液晶30设置于阵列基板10和彩膜基板20之间。该下偏光片设置于阵列基板11远离彩膜基板21的一侧。\n\n[0036]需要说明的是，由于阵列基板11和彩膜基板21设置有液晶30。因此，指纹传感器212不会采集到从阵列基板11反射过来的红外光，只能采集从彩膜基板21反射过来的红外光。\n\n[0037]可以理解的是，本申请实施例中使用红外光进行指纹识别，由于红外光不被用户肉眼所见。因此，避免了用于在观看显示面板100显示的内容时，对显示面板100显示的内容的影响，提高了用户体验。\n\n[0038]为了避免指纹传感器212受到阵列基板11的干扰，导致指纹传感器212无法进行识别。在一些实施例中，可以将该红外发生器111设置于阵列基板11与背光模组12之间。需要说明的是，该红外发生器111完全覆盖该阵列基板11靠近背光模组12一侧的第一显示区110。\n\n[0039]可以理解的是，此时第一显示区110无法进行正常的液晶显示。由于本申请实施例在彩膜基板的第一显示区110设置有发光显示器件211，该发光显示器件211可以自发光显示。因此，本申请实施例可以在实现屏下指纹识别技术的情况下不影响显示面板100的正常显示。\n\n[0040]可以理解的是，为了避免上偏光片22对发光显示器件211的显示效果产生影响，可以将该上偏光片22位于第一显示区110的部分去除，并在该处设置透光率高的玻璃或其他透光率高的材料。\n\n[0041]在一些实施例中，发光显示器件211和指纹传感器212可以设置于彩膜基板21靠近阵列基板11的一侧。并且，由于发光显示器件211的透光率较高，像素分布相对稀疏，可以将发光显示器件211和指纹传感器212集成在一个电路板上，并将多个发光显示器件211和多个指纹传感器212交错设置，充分利用彩膜基板21的空间，进而节省显示面板100的空间，具体可以如图3所示。\n\n[0042]并且，由于指纹识别和发光显示器件211显示可以不同时进行，因此，发光显示器件211和指纹传感器212的布线可以分时复用，从而节省制造成本。\n\n[0043]请参阅图4，在一些实施例中，为了提升指纹识别的信噪比，可以将发光显示器件211设置于彩膜基板21远离所述阵列基板的一侧，并将指纹传感器设置于彩膜基板21靠近阵列基板11的一侧。\n\n[0044]在一些实施例中，为了进一步提升指纹识别的信噪比，还可以在图4所示结构的基础上进行进一步设置。具体可以如图5所示，可以在多个发光显示器件211的间隙设置透光孔213，使得多个透光孔213与多个发光显示器件211交错设置。并且，在彩膜基板21靠近阵列基板11的一侧设置黑色矩阵214。可以理解的是，该黑色矩阵214暴露多个透光孔213和多个发光显示器件211。多个透光孔213和黑色矩阵214位于第一显示区110。\n\n[0045]其中，该透光孔213的直径可以为5微米至50微米。需要说明的是，由于指纹传感器212位于该透光孔213的下方。因此，本申请实施例可以录用小孔成像进一步提升指纹识别的信噪比。\n\n[0046]由上，本申请实施例提供的显示面板100具有第一显示区110和围绕第一显示区110设置的第二显示区120，该显示面板100包括阵列基板11、背光模组12和彩膜基板21，所述阵列基板11与所述背光模组12层叠设置，所述阵列基板11上有红外发生器111，所述红外发生器111位于所述第一显示区110；所述彩膜基板21与所述阵列基板11相对设置，所述彩膜基板21上设置有发光显示器件211和指纹传感器212，所述发光显示器件211和所述指纹传感器212位于所述第一显示区110。本方案提供的显示面板100可以在实现屏下指纹识别技术的情况下不影响显示面板100正常显示。\n\n[0047]需要说明的是，在本申请实施例的描述中，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。\n\n[0048]以上对本申请实施例所提供的一种显示面板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10741, 23795, '技术领域\n\n[0001]本申请涉及移动显示面板领域，尤其地涉及一种大尺寸显示器及其拼接方法。\n\n背景技术\n\n[0002]随着显示器技术的不断发展，显示器的应用场合越来越广泛，不仅仅用于电视、监视器、工业显示、医疗显示，还被越来越多的应用在公共显示场合。在公共显示应用时，一般需要显示器有较大的显示面积，以满足人们远距离观看、较大信息量显示等要求。但是就LCD电视显示器的发展现状，常规的尺寸在32寸到55寸。这个尺寸范围的显示器若用于公共显示，则需要采用多屏拼接的方式。\n\n[0003]当多个屏幕拼接起来时，每个显示器的原先存在的边框互相接壤形成拼接缝，而被明显看到。业界各家面板厂开始克服相关的技术问题，缩减显示器的物理边框，以不断实现拼缝的减小。目前业界的主流拼缝在3.5-5.5mm，部分高端产品或技术展示甚至已经到达1.4mm。以55寸显示器来讲，每个像素的大小为0.63mm X 0.63mm，1.4mm的拼接缝大致可以认为仅2列像素的宽度。当模组产品单体达到上述规格时，实际组装却会因组装公差、预留模组膨胀距离等无法完全达到拼接缝的理论值。\n\n[0004]因此，确有必要来开发一种新型的大尺寸显示器的拼接方法，以克服现有技术的缺陷。\n\n发明内容\n\n[0005]本发明的一个目的是提供一种大尺寸显示器，其能够解决现有技术中显示器拼接时因组装公差、预留模组膨胀距离等无法完全达到拼接缝的理论值的问题。\n\n[0006]为实现上述目的，本发明提供一种大尺寸显示器，包括一基板；至少两个显示面板，真空贴附于所述基板的一面，所述显示面板呈阵列排布，且相邻的所述显示面板之间无缝拼接；一体式背光模组，贴附于所述显示面板远离所述基板的一面或者设于所述基板远离所述显示面板的一面。\n\n[0007]进一步的，在其他实施方式中，其中所述基板的材料采用玻璃、石英或亚克力。\n\n[0008]其中由于有玻璃基板的支撑，大尺寸显示器的稳定性也能够得到提升。\n\n[0009]进一步的，在其他实施方式中，其中所述基板的透过率为40％-95％，所述基板的厚度为0.5-5mm。\n\n[0010]进一步的，在其他实施方式中，其中所述显示面板为LCD显示面板或OLED显示面板或微型发光二极管显示面板。\n\n[0011]为实现上述目的，本发明还提供一种拼接方法，用以拼接本发明涉及所述的大尺寸显示器，所述拼接方法包括以下步骤：提供一基板；在所述基板的表面上沿预设路线涂布胶体；将多个用于拼接的显示面板沿所述胶体路线全贴合在所述基板的一面形成拼接面板，其中所述显示面板呈阵列排布，且相邻的所述显示面板之间无缝拼接；将所述拼接面板与一体式背光模组贴合形成大尺寸显示器。\n\n[0012]其中，通过和一体式背光模组的组装，能够避免多个显示器的组装出现的其他易碰撞的问题。\n\n[0013]进一步的，在其他实施方式中，其中所述显示面板是通过真空贴合的方式贴合在所述基板上。\n\n[0014]通过将多个显示面板全贴合在一个大片的玻璃基板上，形成一个大片的拼接面板，再组合一个一体式背光模组形成大尺寸显示器；由于多个显示面板是真空贴合在大片的玻璃基板上，所以显示面板之间的间隙可以控制接近零，避免现有的大尺寸显示器拼接方法带来的组装间隙，达到对应面板可实现的最小拼接缝。\n\n[0015]进一步的，在其他实施方式中，其中所述基板位于所述显示面板与所述一体式背光模组之间。\n\n[0016]进一步的，在其他实施方式中，其中所述显示面板位于所述基板与所述一体式背光模组之间。\n\n[0017]进一步的，在其他实施方式中，其中所述胶体采用固态的OCA双面胶、聚氨酯热熔胶、水胶、两液混合硬化胶或紫外光固化胶。\n\n[0018]进一步的，在其他实施方式中，其中所述胶体的厚度为0.02-2.5mm。\n\n[0019]进一步的，在其他实施方式中，其中用于拼接的所述显示面板的数量为4个。在其他实施方式中，用于拼接的所述显示面板的数量也可以是6个或8个，在此不做限定，根据需要而定。\n\n[0020]进一步的，在其他实施方式中，其中所述显示面板为3侧无COF的设计。在其他实施方式中，所述显示面板采用GOA技术。\n\n[0021]相对于现有技术，本发明的有益效果在于：本发明提供一种大尺寸显示器及其拼接方法，通过将多个显示面板全贴合在一个大片的玻璃基板上，形成一个大片的拼接面板，再组合一个一体式背光模组形成大尺寸显示器；由于多个显示面板是真空贴合在大片的玻璃基板上，所以显示面板之间的间隙可以控制接近零，避免现有的大尺寸显示器拼接方法带来的组装间隙，达到对应面板可实现的最小拼接缝；另一方面，一体式背光模组的组装，能够避免多个显示器的组装出现的其他易碰撞的问题。\n\n[0022]进一步地，由于有玻璃基板的支撑，大尺寸显示器的稳定性也能够得到提升。\n\n附图说明\n\n[0023]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0024]图1为本发明实施例提供大尺寸显示器的结构示意图；\n\n[0025]图2为本发明实施例提供大尺寸显示器的拼接方法的流程图；\n\n[0026]图3为本发明实施例提供的大尺寸显示器的拼接方法步骤S1时的结构示意图；\n\n[0027]图4为本发明实施例提供的大尺寸显示器的拼接方法步骤S2时的结构示意图；\n\n[0028]图5为本发明实施例提供的大尺寸显示器的拼接方法步骤S3时的结构示意图；\n\n[0029]图6为本发明实施例提供的大尺寸显示器的拼接方法步骤S4时的结构示意图。\n\n附图说明：\n\n[0030]大尺寸显示器-100；\n\n[0031]基板-10； 显示面板-20；\n\n[0032]拼接面板-200； 胶体-30；\n\n[0033]一体式背光模组-40。\n\n具体实施方式\n\n[0034]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0035]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0036]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0037]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0038]请参阅图1，图1本实施例提供的大尺寸显示器100的结构示意图，大尺寸显示器100包括基板10、显示面板20和一体式背光模组40。\n\n[0039]其中基板10的材料采用玻璃、石英或亚克力，基板10的透过率为40％-95％，基板10的厚度为0.5-5mm。\n\n[0040]其中由于有玻璃基板10的支撑，大尺寸显示器100的稳定性也能够得到提升。\n\n[0041]显示面板20真空贴附于基板10的一面，在本实施例中，显示面板20的数量为4个，显示面板20呈阵列排布，且相邻的显示面板20之间无缝拼接。在其他实施方式中，显示面板20的数量也可以是6个或8个，在此不做限定，根据需要而定。\n\n[0042]在本实施例中，显示面板20为LCD显示面板，在其他实施方式中显示面板可以为OLED显示面板或微型发光二极管显示面板。\n\n[0043]一体式背光模组40，贴附于基板10远离显示面板20的一面。在其他实施方式中，显示面板20也可以设于远离基板10的一面。\n\n[0044]本发明还提供一种拼接方法，用以拼接本发明涉及的大尺寸显示器100，拼接方法包括步骤S1-步骤S4，请参阅图2，图2所示为本实施例提供的大尺寸显示器100的拼接方法的流程图。\n\n[0045]步骤S1：提供一基板10；请参阅图3，图3为本实施例提供的大尺寸显示器100的拼接方法步骤S1时的结构示意图。\n\n[0046]其中基板10的材料采用玻璃、石英或亚克力，基板10的透过率为40％-95％，基板10的厚度为0.5-5mm。\n\n[0047]其中由于有玻璃基板10的支撑，大尺寸显示器100的稳定性也能够得到提升。\n\n[0048]步骤S2：在基板10的表面上沿预设路线涂布胶体30；请参阅图4，图4为本实施例提供的大尺寸显示器100的拼接方法步骤S2时的结构示意图。\n\n[0049]其中胶体30采用固态的OCA双面胶、聚氨酯热熔胶、水胶、两液混合硬化胶或紫外光固化胶，胶体30的厚度为0.02-2.5mm。\n\n[0050]步骤S3：将多个用于拼接的显示面板20沿胶体30路线全贴合在基板10的一面形成拼接面板200，其中显示面板20呈阵列排布，且相邻的显示面板20之间无缝拼接；请参阅图5，图5为本实施例提供的大尺寸显示器100的拼接方法步骤S3时的结构示意图。\n\n[0051]其中显示面板20是通过真空贴合的方式贴合在基板10上。\n\n[0052]其中基板10位于显示面板20与一体式背光模组40之间。在其他实施方式中，显示面板20也可以位于基板10与一体式背光模组40之间。\n\n[0053]在本实施例中，用于拼接的显示面板20的数量为4个。在其他实施方式中，用于拼接的显示面板20的数量也可以是6个或8个，在此不做限定，根据需要而定。\n\n[0054]显示面板20为3侧无COF的设计。在其他实施方式中，显示面板20采用GOA技术。\n\n[0055]步骤S4：将拼接面板200与一体式背光模组40贴合形成大尺寸显示器100；请参阅图6，图6为本实施例提供的大尺寸显示器100的拼接方法步骤S4时的结构示意图。\n\n[0056]其中，通过和一体式背光模组40的组装，能够避免多个显示器的组装出现的其他易碰撞的问题。\n\n[0057]本发明的有益效果在于：本发明提供一种大尺寸显示器及其拼接方法，通过将多个显示面板全贴合在一个大片的玻璃基板上，形成一个大片的拼接面板，再组合一个一体式背光模组形成大尺寸显示器；由于多个显示面板是真空贴合在大片的玻璃基板上，所以显示面板之间的间隙可以控制接近零，避免现有的大尺寸显示器拼接方法带来的组装间隙，达到对应面板可实现的最小拼接缝；另一方面，一体式背光模组的组装，能够避免多个显示器的组装出现的其他易碰撞的问题。\n\n[0058]进一步地，由于有玻璃基板的支撑，大尺寸显示器的稳定性也能够得到提升。\n\n[0059]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0060]以上对本申请实施例所提供的一种大尺寸显示器及其拼接方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及移动显示面板领域，尤其地涉及一种大尺寸显示器及其拼接方法。\n\n背景技术\n\n[0002]随着显示器技术的不断发展，显示器的应用场合越来越广泛，不仅仅用于电视、监视器、工业显示、医疗显示，还被越来越多的应用在公共显示场合。在公共显示应用时，一般需要显示器有较大的显示面积，以满足人们远距离观看、较大信息量显示等要求。但是就LCD电视显示器的发展现状，常规的尺寸在32寸到55寸。这个尺寸范围的显示器若用于公共显示，则需要采用多屏拼接的方式。\n\n[0003]当多个屏幕拼接起来时，每个显示器的原先存在的边框互相接壤形成拼接缝，而被明显看到。业界各家面板厂开始克服相关的技术问题，缩减显示器的物理边框，以不断实现拼缝的减小。目前业界的主流拼缝在3.5-5.5mm，部分高端产品或技术展示甚至已经到达1.4mm。以55寸显示器来讲，每个像素的大小为0.63mm X 0.63mm，1.4mm的拼接缝大致可以认为仅2列像素的宽度。当模组产品单体达到上述规格时，实际组装却会因组装公差、预留模组膨胀距离等无法完全达到拼接缝的理论值。\n\n[0004]因此，确有必要来开发一种新型的大尺寸显示器的拼接方法，以克服现有技术的缺陷。\n\n发明内容\n\n[0005]本发明的一个目的是提供一种大尺寸显示器，其能够解决现有技术中显示器拼接时因组装公差、预留模组膨胀距离等无法完全达到拼接缝的理论值的问题。\n\n[0006]为实现上述目的，本发明提供一种大尺寸显示器，包括一基板；至少两个显示面板，真空贴附于所述基板的一面，所述显示面板呈阵列排布，且相邻的所述显示面板之间无缝拼接；一体式背光模组，贴附于所述显示面板远离所述基板的一面或者设于所述基板远离所述显示面板的一面。\n\n[0007]进一步的，在其他实施方式中，其中所述基板的材料采用玻璃、石英或亚克力。\n\n[0008]其中由于有玻璃基板的支撑，大尺寸显示器的稳定性也能够得到提升。\n\n[0009]进一步的，在其他实施方式中，其中所述基板的透过率为40％-95％，所述基板的厚度为0.5-5mm。\n\n[0010]进一步的，在其他实施方式中，其中所述显示面板为LCD显示面板或OLED显示面板或微型发光二极管显示面板。\n\n[0011]为实现上述目的，本发明还提供一种拼接方法，用以拼接本发明涉及所述的大尺寸显示器，所述拼接方法包括以下步骤：提供一基板；在所述基板的表面上沿预设路线涂布胶体；将多个用于拼接的显示面板沿所述胶体路线全贴合在所述基板的一面形成拼接面板，其中所述显示面板呈阵列排布，且相邻的所述显示面板之间无缝拼接；将所述拼接面板与一体式背光模组贴合形成大尺寸显示器。\n\n[0012]其中，通过和一体式背光模组的组装，能够避免多个显示器的组装出现的其他易碰撞的问题。\n\n[0013]进一步的，在其他实施方式中，其中所述显示面板是通过真空贴合的方式贴合在所述基板上。\n\n[0014]通过将多个显示面板全贴合在一个大片的玻璃基板上，形成一个大片的拼接面板，再组合一个一体式背光模组形成大尺寸显示器；由于多个显示面板是真空贴合在大片的玻璃基板上，所以显示面板之间的间隙可以控制接近零，避免现有的大尺寸显示器拼接方法带来的组装间隙，达到对应面板可实现的最小拼接缝。\n\n[0015]进一步的，在其他实施方式中，其中所述基板位于所述显示面板与所述一体式背光模组之间。\n\n[0016]进一步的，在其他实施方式中，其中所述显示面板位于所述基板与所述一体式背光模组之间。\n\n[0017]进一步的，在其他实施方式中，其中所述胶体采用固态的OCA双面胶、聚氨酯热熔胶、水胶、两液混合硬化胶或紫外光固化胶。\n\n[0018]进一步的，在其他实施方式中，其中所述胶体的厚度为0.02-2.5mm。\n\n[0019]进一步的，在其他实施方式中，其中用于拼接的所述显示面板的数量为4个。在其他实施方式中，用于拼接的所述显示面板的数量也可以是6个或8个，在此不做限定，根据需要而定。\n\n[0020]进一步的，在其他实施方式中，其中所述显示面板为3侧无COF的设计。在其他实施方式中，所述显示面板采用GOA技术。\n\n[0021]相对于现有技术，本发明的有益效果在于：本发明提供一种大尺寸显示器及其拼接方法，通过将多个显示面板全贴合在一个大片的玻璃基板上，形成一个大片的拼接面板，再组合一个一体式背光模组形成大尺寸显示器；由于多个显示面板是真空贴合在大片的玻璃基板上，所以显示面板之间的间隙可以控制接近零，避免现有的大尺寸显示器拼接方法带来的组装间隙，达到对应面板可实现的最小拼接缝；另一方面，一体式背光模组的组装，能够避免多个显示器的组装出现的其他易碰撞的问题。\n\n[0022]进一步地，由于有玻璃基板的支撑，大尺寸显示器的稳定性也能够得到提升。\n\n附图说明\n\n[0023]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0024]图1为本发明实施例提供大尺寸显示器的结构示意图；\n\n[0025]图2为本发明实施例提供大尺寸显示器的拼接方法的流程图；\n\n[0026]图3为本发明实施例提供的大尺寸显示器的拼接方法步骤S1时的结构示意图；\n\n[0027]图4为本发明实施例提供的大尺寸显示器的拼接方法步骤S2时的结构示意图；\n\n[0028]图5为本发明实施例提供的大尺寸显示器的拼接方法步骤S3时的结构示意图；\n\n[0029]图6为本发明实施例提供的大尺寸显示器的拼接方法步骤S4时的结构示意图。\n\n附图说明：\n\n[0030]大尺寸显示器-100；\n\n[0031]基板-10； 显示面板-20；\n\n[0032]拼接面板-200； 胶体-30；\n\n[0033]一体式背光模组-40。\n\n具体实施方式\n\n[0034]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0035]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0036]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0037]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0038]请参阅图1，图1本实施例提供的大尺寸显示器100的结构示意图，大尺寸显示器100包括基板10、显示面板20和一体式背光模组40。\n\n[0039]其中基板10的材料采用玻璃、石英或亚克力，基板10的透过率为40％-95％，基板10的厚度为0.5-5mm。\n\n[0040]其中由于有玻璃基板10的支撑，大尺寸显示器100的稳定性也能够得到提升。\n\n[0041]显示面板20真空贴附于基板10的一面，在本实施例中，显示面板20的数量为4个，显示面板20呈阵列排布，且相邻的显示面板20之间无缝拼接。在其他实施方式中，显示面板20的数量也可以是6个或8个，在此不做限定，根据需要而定。\n\n[0042]在本实施例中，显示面板20为LCD显示面板，在其他实施方式中显示面板可以为OLED显示面板或微型发光二极管显示面板。\n\n[0043]一体式背光模组40，贴附于基板10远离显示面板20的一面。在其他实施方式中，显示面板20也可以设于远离基板10的一面。\n\n[0044]本发明还提供一种拼接方法，用以拼接本发明涉及的大尺寸显示器100，拼接方法包括步骤S1-步骤S4，请参阅图2，图2所示为本实施例提供的大尺寸显示器100的拼接方法的流程图。\n\n[0045]步骤S1：提供一基板10；请参阅图3，图3为本实施例提供的大尺寸显示器100的拼接方法步骤S1时的结构示意图。\n\n[0046]其中基板10的材料采用玻璃、石英或亚克力，基板10的透过率为40％-95％，基板10的厚度为0.5-5mm。\n\n[0047]其中由于有玻璃基板10的支撑，大尺寸显示器100的稳定性也能够得到提升。\n\n[0048]步骤S2：在基板10的表面上沿预设路线涂布胶体30；请参阅图4，图4为本实施例提供的大尺寸显示器100的拼接方法步骤S2时的结构示意图。\n\n[0049]其中胶体30采用固态的OCA双面胶、聚氨酯热熔胶、水胶、两液混合硬化胶或紫外光固化胶，胶体30的厚度为0.02-2.5mm。\n\n[0050]步骤S3：将多个用于拼接的显示面板20沿胶体30路线全贴合在基板10的一面形成拼接面板200，其中显示面板20呈阵列排布，且相邻的显示面板20之间无缝拼接；请参阅图5，图5为本实施例提供的大尺寸显示器100的拼接方法步骤S3时的结构示意图。\n\n[0051]其中显示面板20是通过真空贴合的方式贴合在基板10上。\n\n[0052]其中基板10位于显示面板20与一体式背光模组40之间。在其他实施方式中，显示面板20也可以位于基板10与一体式背光模组40之间。\n\n[0053]在本实施例中，用于拼接的显示面板20的数量为4个。在其他实施方式中，用于拼接的显示面板20的数量也可以是6个或8个，在此不做限定，根据需要而定。\n\n[0054]显示面板20为3侧无COF的设计。在其他实施方式中，显示面板20采用GOA技术。\n\n[0055]步骤S4：将拼接面板200与一体式背光模组40贴合形成大尺寸显示器100；请参阅图6，图6为本实施例提供的大尺寸显示器100的拼接方法步骤S4时的结构示意图。\n\n[0056]其中，通过和一体式背光模组40的组装，能够避免多个显示器的组装出现的其他易碰撞的问题。\n\n[0057]本发明的有益效果在于：本发明提供一种大尺寸显示器及其拼接方法，通过将多个显示面板全贴合在一个大片的玻璃基板上，形成一个大片的拼接面板，再组合一个一体式背光模组形成大尺寸显示器；由于多个显示面板是真空贴合在大片的玻璃基板上，所以显示面板之间的间隙可以控制接近零，避免现有的大尺寸显示器拼接方法带来的组装间隙，达到对应面板可实现的最小拼接缝；另一方面，一体式背光模组的组装，能够避免多个显示器的组装出现的其他易碰撞的问题。\n\n[0058]进一步地，由于有玻璃基板的支撑，大尺寸显示器的稳定性也能够得到提升。\n\n[0059]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0060]以上对本申请实施例所提供的一种大尺寸显示器及其拼接方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10742, 23796, '【技术领域】\n\n[0001]本发明涉及显示技术领域，特别是涉及一种背板的制作方法。\n\n【背景技术】\n\n[0002]以发光器件为Mini-LED为例，现有的背板制作中需要制作遮光层，以避免光线对器件性能的影响；遮光层通过清洗、涂胶、曝光、显影等工序制作得到，背板制作过程中，在透明导电层形成过程中会将其上方的绝缘层与绑定区域对应的位置处进行开孔，以裸露出底部的金属层，从而便于Mini-LED焊接，在实际制作遮光层过程中，由于金属层(Al、Cu等)裸露在外，导致显影液会腐蚀金属层，甚至部分金属会扩散至遮光层，从而形成显影阻挡层，导致金属层上方的遮光层残留；此外遮光层的烘烤也会对裸露的金属层造成氧化影响发光器件的焊接效果，从而降低了背板的良率。\n\n[0003]因此，有必要提供一种背板的制作方法，以解决现有技术所存在的问题。\n\n【发明内容】\n\n[0004]本发明的目的在于提供一种背板的制作方法，能够避免金属层被腐蚀以及氧化，提高了发光器件的焊接效果和背板良率。\n\n[0005]为解决上述技术问题，本发明提供一种背板的制作方法，包括：\n\n[0006]在衬底基板上制作第二金属层；\n\n[0007]对所述第二金属层进行图案化处理，形成阳极以及阴极；\n\n[0008]在所述第二金属层上形成第一钝化层，对所述第一钝化层进行图案化处理，以形成开口区域，所述开口区域用于将所述阳极和所述阴极裸露在外；\n\n[0009]在所述第一钝化层以及所述阳极和所述阴极上制作第二钝化层；\n\n[0010]在所述第二钝化层上制作遮光层，对所述遮光层进行图案化处理，以使与所述开口区域对应位置处的遮光层去除；\n\n[0011]将所述阳极和所述阴极上方的第二钝化层去除。\n\n[0012]本发明的背板的制作方法，包括在衬底基板上制作第二金属层；对所述第二金属层进行图案化处理，形成阳极以及阴极；在第二金属层上形成第一钝化层，对所述第一钝化层进行图案化处理，以形成开口区域，所述开口区域用于将所述阳极和所述阴极裸露在外；在所述第一钝化层以及所述阳极和所述阴极上制作第二钝化层；在所述第二钝化层上制作遮光层，对所述遮光层进行图案化处理，以使与所述开口区域对应位置处的遮光层去除；将所述阳极和所述阴极上方的第二钝化层去除；由于在对遮光层进行图案化处理之前，先在阳极和阴极上形成第二钝化层，从而避免显影液腐蚀第二金属层，以及避免金属扩散至遮光层，提高了发光器件的焊接效果和背板良率。\n\n【附图说明】\n\n[0013]图1为本发明实施例一的背板的制作方法的第一步至第三步的结构示意图；\n\n[0014]图2为本发明实施例一的背板的制作方法的第四步和第五步的结构示意图；\n\n[0015]图3为本发明实施例一的背板的制作方法的第六步的结构示意图；\n\n[0016]图4为本发明实施例二的背板的制作方法的第一步至第八步的结构示意图；\n\n[0017]图5为本发明实施例二的背板的制作方法的第九步的结构示意图。\n\n【具体实施方式】\n\n[0018]以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。\n\n[0019]本申请的说明书和权利要求书及上述附图中的术语“第一”、“第二”等是用于区别不同对象，而不是用于描述特定顺序。此外，术语“包括”和“具有”以及它们任何变形，意图在于覆盖不排他的包含。\n\n[0020]请参照图1至图3，本发明实施例一提供的背板的制作方法，包括：\n\n[0021]S101、在衬底基板上制作第二金属层；\n\n[0022]例如如图1所示，在衬底基板11上制作第二金属层15。第二金属层15的材料可以为铝或者铜。\n\n[0023]S102、对所述第二金属层进行图案化处理，形成阳极以及阴极；\n\n[0024]例如，如图1所示，对所述第二金属层15进行图案化处理，形成阳极153以及阴极154。\n\n[0025]S103、在第二金属层上形成第一钝化层，对所述第一钝化层进行图案化处理，以形成开口区域，所述开口区域用于将所述阳极和所述阴极裸露在外；\n\n[0026]例如，如图1所示，在第二金属层15上形成第一钝化层16，对所述第一钝化层16进行图案化处理，以形成开口区域(图中未示出)，所述开口区域用于将所述阳极153和所述阴极154裸露在外。\n\n[0027]S104、在所述第一钝化层以及所述阳极和所述阴极上制作第二钝化层；\n\n[0028]例如，如图2所示，在所述第一钝化层16以及所述阳极153和所述阴极154上制作第二钝化层18。\n\n[0029]S105、在所述第二钝化层上制作遮光层，对所述遮光层进行图案化处理，以使与所述开口区域对应位置处的遮光层去除；\n\n[0030]例如，在所述第二钝化层18上制作遮光层19，并对所述遮光层19进行图案化处理，以使与所述开口区域对应位置处的遮光层19去除。此处的图案化处理可以包括曝光、显影等步骤，显影过程中通常使用到显影液。\n\n[0031]S106、将所述阳极和所述阴极上方的第二钝化层去除。\n\n[0032]例如，如图3所示，将所述阳极153和所述阴极154上方的第二钝化层18去除，从而将阳极和阴极裸露在外，以便于绑定发光器件。发光器件可以包括Micro-LED、OLED、Mini-LED中的一种。\n\n[0033]本实施例由于在对遮光层进行图案化处理之前，先在阳极和阴极上形成第二钝化层，从而避免显影液腐蚀第二金属层，以及避免金属扩散至遮光层，提高了发光器件的焊接效果和背板良率。\n\n[0034]请参照图4和图5，本发明实施例二提供的背板的制作方法，包括：\n\n[0035]S201、在所述衬底基板上制作第一金属层，对所述第一金属层进行图案化处理形成栅极和连接线；\n\n[0036]其中所述背板包括连接区域。\n\n[0037]例如，如图4所示，在所述衬底基板11上制作第一金属层12，对所述第一金属层12进行图案化处理形成连接线121和栅极122；之后还可在所述栅极121和连接线122上形成绝缘层13。\n\n[0038]S202、在所述第一金属层上制作半导体层；\n\n[0039]例如，在一实施方式中，在所述绝缘层13上形成半导体层14。\n\n[0040]S203、在半导体层上制作第二金属层；\n\n[0041]例如，如图4所示，在半导体层14上制作第二金属层15。第二金属层15的材料可以为铝或者铜。\n\n[0042]S204、对所述第二金属层进行图案化处理，形成阳极以及阴极；\n\n[0043]例如，如图4所示，对所述第二金属层15进行图案化处理，形成源极151、漏极152、以及阳极153和阴极154。所述源极151和所述漏极152分别与所述半导体层14连接。\n\n[0044]S205、在第二金属层上形成第一钝化层，对所述第一钝化层进行图案化处理，以形成开口区域，所述开口区域用于将所述阳极和所述阴极裸露在外；\n\n[0045]例如，如图4所示，在第二金属层15上形成第一钝化层16，对所述第一钝化层16进行图案化处理，以形成开口区域(图中未示出)，所述开口区域用于将所述阳极153和所述阴极154裸露在外。\n\n[0046]S206、在位于所述连接区域的第一钝化层上制作透明导电层。\n\n[0047]例如，在与所述连接区域的第一钝化层16上制作透明导电层17。其中所述连接区域的位置与所述连接线121的位置对应。所述透明导电层17的材料为ITO。所述透明导电层17与所述连接线121连接。\n\n[0048]S207、在所述第一钝化层以及所述阳极和所述阴极上制作第二钝化层；\n\n[0049]例如，如图4所示，在所述第一钝化层16以及所述阳极153和所述阴极154上制作第二钝化层18。第二钝化层18的材料可以包括SiNx和SiO2中的至少一种。\n\n[0050]S208、在所述第二钝化层上制作遮光层，对所述遮光层进行图案化处理，以使与所述开口区域对应位置处的遮光层去除；\n\n[0051]例如，在所述第二钝化层18上制作遮光层19，并对所述遮光层19进行图案化处理，以使与所述开口区域对应位置处的遮光层19去除。其中所述遮光层19的材料优选为黑色光阻。\n\n[0052]S209、将所述阳极和所述阴极上方的第二钝化层去除。\n\n[0053]例如，如图5所示，将所述阳极153和所述阴极154上方的第二钝化层18去除，从而将阳极153和阴极154裸露在外，以便于绑定发光器件。发光器件可以包括Micro-LED、OLED、Mini-LED中的一种。\n\n[0054]在一实施方式中，为了避免腐蚀阳极和阴极，所述将所述阳极和所述阴极上方的第二钝化层去除的步骤可包括：\n\n[0055]S2091、通过干刻工艺将将所述阳极和所述阴极上方的第二钝化层去除。\n\n[0056]例如，以图案化后的遮光层18作为遮挡体对第二钝化层进行干法蚀刻，从而裸露出绑定区域(也即与开口区域对应)，之后进行清洗或剥离工艺来清除阳极和阴极表面的残留物，所述绑定区域用于绑定发光器件。也即绑定区域与开口区域的位置对应。\n\n[0057]S210、在所述开口区域绑定发光器件，其中所述发光器件的第一端与所述阳极连接，所述发光器件的第二端与所述阴极连接。\n\n[0058]所述发光器件的第一端为阳极，所述发光器件的第二端为阴极。\n\n[0059]在一实施方式中，为了进一步提高显示效果，所述发光器件为微型发光二极管。\n\n[0060]在另一实施例中，所述在所述第一钝化层上制作第二钝化层的步骤之后，以及所述在所述第二钝化层上制作遮光层的步骤之前，所述方法还包括：\n\n[0061]S208’、对所述透明导电层17进行退火处理。\n\n[0062]通过退火处理，可以减小透明导电层17的电阻，进一步提高导电性能。由于在制作完第二钝化层18后，才对透明导电层17进行退火处理，因此可以避免对裸露的阳极和阴极造成氧化，进一步提高了发光器件的焊接效果。\n\n[0063]本发明的背板的制作方法，包括在衬底基板上制作第二金属层；对所述第二金属层进行图案化处理，形成阳极以及阴极；在所述第二金属层上形成第一钝化层，对所述第一钝化层进行图案化处理，以形成开口区域，所述开口区域用于将所述阳极和所述阴极裸露在外；在所述第一钝化层以及所述阳极和所述阴极上制作第二钝化层；在所述第二钝化层上制作遮光层，对所述遮光层进行图案化处理，以使与所述开口区域对应位置处的遮光层去除；将所述阳极和所述阴极上方的第二钝化层去除；由于在对遮光层进行图案化处理之前，先在阳极和阴极上形成第二钝化层，从而避免显影液腐蚀第二金属层，以及避免金属扩散至遮光层，提高了发光器件的焊接效果和背板良率。\n\n[0064]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '【技术领域】\n\n[0001]本发明涉及显示技术领域，特别是涉及一种背板的制作方法。\n\n【背景技术】\n\n[0002]以发光器件为Mini-LED为例，现有的背板制作中需要制作遮光层，以避免光线对器件性能的影响；遮光层通过清洗、涂胶、曝光、显影等工序制作得到，背板制作过程中，在透明导电层形成过程中会将其上方的绝缘层与绑定区域对应的位置处进行开孔，以裸露出底部的金属层，从而便于Mini-LED焊接，在实际制作遮光层过程中，由于金属层(Al、Cu等)裸露在外，导致显影液会腐蚀金属层，甚至部分金属会扩散至遮光层，从而形成显影阻挡层，导致金属层上方的遮光层残留；此外遮光层的烘烤也会对裸露的金属层造成氧化影响发光器件的焊接效果，从而降低了背板的良率。\n\n[0003]因此，有必要提供一种背板的制作方法，以解决现有技术所存在的问题。\n\n【发明内容】\n\n[0004]本发明的目的在于提供一种背板的制作方法，能够避免金属层被腐蚀以及氧化，提高了发光器件的焊接效果和背板良率。\n\n[0005]为解决上述技术问题，本发明提供一种背板的制作方法，包括：\n\n[0006]在衬底基板上制作第二金属层；\n\n[0007]对所述第二金属层进行图案化处理，形成阳极以及阴极；\n\n[0008]在所述第二金属层上形成第一钝化层，对所述第一钝化层进行图案化处理，以形成开口区域，所述开口区域用于将所述阳极和所述阴极裸露在外；\n\n[0009]在所述第一钝化层以及所述阳极和所述阴极上制作第二钝化层；\n\n[0010]在所述第二钝化层上制作遮光层，对所述遮光层进行图案化处理，以使与所述开口区域对应位置处的遮光层去除；\n\n[0011]将所述阳极和所述阴极上方的第二钝化层去除。\n\n[0012]本发明的背板的制作方法，包括在衬底基板上制作第二金属层；对所述第二金属层进行图案化处理，形成阳极以及阴极；在第二金属层上形成第一钝化层，对所述第一钝化层进行图案化处理，以形成开口区域，所述开口区域用于将所述阳极和所述阴极裸露在外；在所述第一钝化层以及所述阳极和所述阴极上制作第二钝化层；在所述第二钝化层上制作遮光层，对所述遮光层进行图案化处理，以使与所述开口区域对应位置处的遮光层去除；将所述阳极和所述阴极上方的第二钝化层去除；由于在对遮光层进行图案化处理之前，先在阳极和阴极上形成第二钝化层，从而避免显影液腐蚀第二金属层，以及避免金属扩散至遮光层，提高了发光器件的焊接效果和背板良率。\n\n【附图说明】\n\n[0013]图1为本发明实施例一的背板的制作方法的第一步至第三步的结构示意图；\n\n[0014]图2为本发明实施例一的背板的制作方法的第四步和第五步的结构示意图；\n\n[0015]图3为本发明实施例一的背板的制作方法的第六步的结构示意图；\n\n[0016]图4为本发明实施例二的背板的制作方法的第一步至第八步的结构示意图；\n\n[0017]图5为本发明实施例二的背板的制作方法的第九步的结构示意图。\n\n【具体实施方式】\n\n[0018]以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。\n\n[0019]本申请的说明书和权利要求书及上述附图中的术语“第一”、“第二”等是用于区别不同对象，而不是用于描述特定顺序。此外，术语“包括”和“具有”以及它们任何变形，意图在于覆盖不排他的包含。\n\n[0020]请参照图1至图3，本发明实施例一提供的背板的制作方法，包括：\n\n[0021]S101、在衬底基板上制作第二金属层；\n\n[0022]例如如图1所示，在衬底基板11上制作第二金属层15。第二金属层15的材料可以为铝或者铜。\n\n[0023]S102、对所述第二金属层进行图案化处理，形成阳极以及阴极；\n\n[0024]例如，如图1所示，对所述第二金属层15进行图案化处理，形成阳极153以及阴极154。\n\n[0025]S103、在第二金属层上形成第一钝化层，对所述第一钝化层进行图案化处理，以形成开口区域，所述开口区域用于将所述阳极和所述阴极裸露在外；\n\n[0026]例如，如图1所示，在第二金属层15上形成第一钝化层16，对所述第一钝化层16进行图案化处理，以形成开口区域(图中未示出)，所述开口区域用于将所述阳极153和所述阴极154裸露在外。\n\n[0027]S104、在所述第一钝化层以及所述阳极和所述阴极上制作第二钝化层；\n\n[0028]例如，如图2所示，在所述第一钝化层16以及所述阳极153和所述阴极154上制作第二钝化层18。\n\n[0029]S105、在所述第二钝化层上制作遮光层，对所述遮光层进行图案化处理，以使与所述开口区域对应位置处的遮光层去除；\n\n[0030]例如，在所述第二钝化层18上制作遮光层19，并对所述遮光层19进行图案化处理，以使与所述开口区域对应位置处的遮光层19去除。此处的图案化处理可以包括曝光、显影等步骤，显影过程中通常使用到显影液。\n\n[0031]S106、将所述阳极和所述阴极上方的第二钝化层去除。\n\n[0032]例如，如图3所示，将所述阳极153和所述阴极154上方的第二钝化层18去除，从而将阳极和阴极裸露在外，以便于绑定发光器件。发光器件可以包括Micro-LED、OLED、Mini-LED中的一种。\n\n[0033]本实施例由于在对遮光层进行图案化处理之前，先在阳极和阴极上形成第二钝化层，从而避免显影液腐蚀第二金属层，以及避免金属扩散至遮光层，提高了发光器件的焊接效果和背板良率。\n\n[0034]请参照图4和图5，本发明实施例二提供的背板的制作方法，包括：\n\n[0035]S201、在所述衬底基板上制作第一金属层，对所述第一金属层进行图案化处理形成栅极和连接线；\n\n[0036]其中所述背板包括连接区域。\n\n[0037]例如，如图4所示，在所述衬底基板11上制作第一金属层12，对所述第一金属层12进行图案化处理形成连接线121和栅极122；之后还可在所述栅极121和连接线122上形成绝缘层13。\n\n[0038]S202、在所述第一金属层上制作半导体层；\n\n[0039]例如，在一实施方式中，在所述绝缘层13上形成半导体层14。\n\n[0040]S203、在半导体层上制作第二金属层；\n\n[0041]例如，如图4所示，在半导体层14上制作第二金属层15。第二金属层15的材料可以为铝或者铜。\n\n[0042]S204、对所述第二金属层进行图案化处理，形成阳极以及阴极；\n\n[0043]例如，如图4所示，对所述第二金属层15进行图案化处理，形成源极151、漏极152、以及阳极153和阴极154。所述源极151和所述漏极152分别与所述半导体层14连接。\n\n[0044]S205、在第二金属层上形成第一钝化层，对所述第一钝化层进行图案化处理，以形成开口区域，所述开口区域用于将所述阳极和所述阴极裸露在外；\n\n[0045]例如，如图4所示，在第二金属层15上形成第一钝化层16，对所述第一钝化层16进行图案化处理，以形成开口区域(图中未示出)，所述开口区域用于将所述阳极153和所述阴极154裸露在外。\n\n[0046]S206、在位于所述连接区域的第一钝化层上制作透明导电层。\n\n[0047]例如，在与所述连接区域的第一钝化层16上制作透明导电层17。其中所述连接区域的位置与所述连接线121的位置对应。所述透明导电层17的材料为ITO。所述透明导电层17与所述连接线121连接。\n\n[0048]S207、在所述第一钝化层以及所述阳极和所述阴极上制作第二钝化层；\n\n[0049]例如，如图4所示，在所述第一钝化层16以及所述阳极153和所述阴极154上制作第二钝化层18。第二钝化层18的材料可以包括SiNx和SiO2中的至少一种。\n\n[0050]S208、在所述第二钝化层上制作遮光层，对所述遮光层进行图案化处理，以使与所述开口区域对应位置处的遮光层去除；\n\n[0051]例如，在所述第二钝化层18上制作遮光层19，并对所述遮光层19进行图案化处理，以使与所述开口区域对应位置处的遮光层19去除。其中所述遮光层19的材料优选为黑色光阻。\n\n[0052]S209、将所述阳极和所述阴极上方的第二钝化层去除。\n\n[0053]例如，如图5所示，将所述阳极153和所述阴极154上方的第二钝化层18去除，从而将阳极153和阴极154裸露在外，以便于绑定发光器件。发光器件可以包括Micro-LED、OLED、Mini-LED中的一种。\n\n[0054]在一实施方式中，为了避免腐蚀阳极和阴极，所述将所述阳极和所述阴极上方的第二钝化层去除的步骤可包括：\n\n[0055]S2091、通过干刻工艺将将所述阳极和所述阴极上方的第二钝化层去除。\n\n[0056]例如，以图案化后的遮光层18作为遮挡体对第二钝化层进行干法蚀刻，从而裸露出绑定区域(也即与开口区域对应)，之后进行清洗或剥离工艺来清除阳极和阴极表面的残留物，所述绑定区域用于绑定发光器件。也即绑定区域与开口区域的位置对应。\n\n[0057]S210、在所述开口区域绑定发光器件，其中所述发光器件的第一端与所述阳极连接，所述发光器件的第二端与所述阴极连接。\n\n[0058]所述发光器件的第一端为阳极，所述发光器件的第二端为阴极。\n\n[0059]在一实施方式中，为了进一步提高显示效果，所述发光器件为微型发光二极管。\n\n[0060]在另一实施例中，所述在所述第一钝化层上制作第二钝化层的步骤之后，以及所述在所述第二钝化层上制作遮光层的步骤之前，所述方法还包括：\n\n[0061]S208’、对所述透明导电层17进行退火处理。\n\n[0062]通过退火处理，可以减小透明导电层17的电阻，进一步提高导电性能。由于在制作完第二钝化层18后，才对透明导电层17进行退火处理，因此可以避免对裸露的阳极和阴极造成氧化，进一步提高了发光器件的焊接效果。\n\n[0063]本发明的背板的制作方法，包括在衬底基板上制作第二金属层；对所述第二金属层进行图案化处理，形成阳极以及阴极；在所述第二金属层上形成第一钝化层，对所述第一钝化层进行图案化处理，以形成开口区域，所述开口区域用于将所述阳极和所述阴极裸露在外；在所述第一钝化层以及所述阳极和所述阴极上制作第二钝化层；在所述第二钝化层上制作遮光层，对所述遮光层进行图案化处理，以使与所述开口区域对应位置处的遮光层去除；将所述阳极和所述阴极上方的第二钝化层去除；由于在对遮光层进行图案化处理之前，先在阳极和阴极上形成第二钝化层，从而避免显影液腐蚀第二金属层，以及避免金属扩散至遮光层，提高了发光器件的焊接效果和背板良率。\n\n[0064]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10743, 23797, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种Micro LED的转移方法。\n\n背景技术\n\n[0002]Micro LED显示器相比OLED显示器具有可靠性高，色域高，亮度高，透明度高，PPI高的优点，且封装要求低，更容易实现柔性及无缝拼接显示，是未来极具有发展潜力的未来显示器。\n\n[0003]现有的Micro LED在应用于大尺寸显示器件中时，通常先去掉蓝宝石基板或砷化镓基板，再通过巨量转移把Micro LED转移至对应显示器件的TFT基板上。然而，由于MicroLED在从高密度的蓝宝石基板或砷化镓基板转移至低密度的TFT基板上时，需要进行选择性的转移，因此通常都会进行多次转移，且在多次转移过程中还会存在转移良率问题。\n\n[0004]因此，现有的Micro LED存在多次转移影响转移良率的技术问题，需要改进。\n\n发明内容\n\n[0005]本发明提供一种Micro LED的转移方法，以缓解现有的Micro LED多次转移影响转移良率的技术问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明提供一种Micro LED的转移方法，包括：\n\n[0008]提供阵列基板，所述阵列基板一侧设置有粘结层，所述阵列基板的像素区包括多个薄膜晶体管；\n\n[0009]将转移板转移至所述阵列基板上方，所述转移板靠近所述粘结层的一侧设置有层叠的缓冲层和芯片层，所述芯片层包括阵列分布的多个Micro LED芯片，且数量大于所述薄膜晶体管的数量，所述Micro LED芯片包括第一Micro LED 芯片，所述第一Micro LED芯片的第一电极与所述薄膜晶体管的第二电极对应；\n\n[0010]将掩膜版转移至所述转移板远离所述阵列基板的一侧，所述掩膜版的开口区与所述第一Micro LED芯片对应；\n\n[0011]通过所述掩膜版对所述转移板进行激光扫描，将所述第一Micro LED芯片从所述缓冲层剥离至所述粘结层上；\n\n[0012]将所述第一Micro LED芯片的第一电极与所述薄膜晶体管的第二电极电性连接。\n\n[0013]在本发明的Micro LED的转移方法中，所述提供阵列基板，所述阵列基板一侧设置有粘结层，所述阵列基板的像素区包括多个薄膜晶体管的步骤包括：在所述阵列基板一侧设置材料为异方性导电胶的粘结层。\n\n[0014]在本发明的Micro LED的转移方法中，所述提供阵列基板，所述阵列基板一侧设置有粘结层，所述阵列基板的像素区包括多个薄膜晶体管的步骤包括：在所述阵列基板一侧设置材料为非导电胶的粘结层。\n\n[0015]在本发明的Micro LED的转移方法中，所述将转移板转移至所述阵列基板上方，所述转移板靠近所述粘结层的一侧设置有层叠的缓冲层和芯片层的步骤包括：将转移板转移至所述阵列基板上方，所述转移板靠近所述粘结层的一侧设置有材料为氮化镓的缓冲层。\n\n[0016]在本发明的Micro LED的转移方法中，所述通过所述掩膜版对所述转移板进行激光扫描，将所述第一Micro LED芯片从所述缓冲层剥离至所述粘结层上的步骤包括：通过所述掩膜版对所述转移板进行激光扫描，将所述开口区对应的缓冲层分解。\n\n[0017]在本发明的Micro LED的转移方法中，在所述通过所述掩膜版对所述转移板进行激光扫描，将所述第一Micro LED芯片从所述缓冲层剥离至所述粘结层上的步骤之后，还包括：用盐酸清洗所述粘结层上的第一Micro LED芯片表面。\n\n[0018]在本发明的Micro LED的转移方法中，所述将掩膜版转移至所述转移板远离所述阵列基板的一侧的步骤包括：将掩膜版转移至所述转移板远离所述阵列基板的一侧，所述掩膜板包括层叠设置的基底和镀膜层，所述镀膜层靠近所述转移板，所述基底和所述转移板对激光的透过率相同。\n\n[0019]在本发明的Micro LED的转移方法中，所述通过所述掩膜版对所述转移板进行激光扫描的步骤包括：使用激光发射器对所述掩膜板进行整面扫描。\n\n[0020]在本发明的Micro LED的转移方法中，所述通过所述掩膜版对所述转移板进行激光扫描的步骤包括：使用激光发射器对所述掩膜板的开口区进行扫描。\n\n[0021]在本发明的Micro LED的转移方法中，所述将所述第一Micro LED芯片的第一电极与所述薄膜晶体管的第二电极电性连接的步骤包括：对所述第一Micro LED芯片进行加压和加热处理，将所述第一Micro LED芯片的第一电极与所述薄膜晶体管的第二电极电性连接。\n\n[0022]本发明的有益效果为：本发明提供一种Micro LED的转移方法，包括：提供阵列基板，所述阵列基板一侧设置有粘结层，所述阵列基板的像素区包括多个薄膜晶体管；将转移板转移至所述阵列基板上方，所述转移板靠近所述粘结层的一侧设置有层叠的缓冲层和芯片层，所述芯片层包括阵列分布的多个Micro LED芯片，且数量大于所述薄膜晶体管的数量，所述Micro LED芯片包括第一 Micro LED芯片，所述第一Micro LED芯片的第一电极与所述薄膜晶体管的第二电极对应；将掩膜版转移至所述转移板远离所述阵列基板的一侧，所述掩膜版的开口区与所述第一Micro LED芯片对应；通过所述掩膜版对所述转移板进行激光扫描，将所述第一Micro LED芯片从所述缓冲层剥离至所述粘结层上；将所述第一Micro LED芯片的第一电极与所述薄膜晶体管的第二电极电性连接。本发明使用激光通过掩膜版的方式选择性剥离，实现了Micro LED芯片从高密度基板到低密度基板的定向转移，仅需通过一次转移就可实现Micro LED 的巨量转移，因此简化了转移工序，提高了转移良率。\n\n附图说明\n\n[0023]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0024]图1为本发明实施例提供的Micro LED的转移方法流程示意图。\n\n[0025]图2为本发明实施例提供的Micro LED的转移方法中Micro LED芯片转移前各组件位置示意图。\n\n[0026]图3为本发明实施例提供的Micro LED的转移方法中阵列基板的膜层结构示意图。\n\n[0027]图4为本发明实施例提供的Micro LED的转移方法中转移板和Micro LED 芯片俯视示意图。\n\n[0028]图5为本发明实施例提供的Micro LED的转移方法中掩膜版俯视示意图。\n\n[0029]图6为本发明实施例提供的Micro LED的转移方法中Micro LED芯片转移后各组件位置示意图。\n\n[0030]图7为本发明实施例提供的Micro LED的转移方法中Micro LED芯片转移后各组件位置俯视示意图。\n\n具体实施方式\n\n[0031]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0032]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0033]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0034]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0035]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0036]本发明提供一种Micro LED的转移方法，以缓解现有的Micro LED多次转移影响转移良率的技术问题。\n\n[0037]微发光二极管(Micro LED)显示面板与传统的液晶显示面板相比，具有分辨率更高、对比度更好、响应时间更快及能耗更低等优点，因而被视为下一代显示技术。Micro LED芯片在制作完成之后，需要将几万至几十万个Micro LED 芯片转移到阵列基板上形成LED阵列，这一过程被称为“巨量转移”。\n\n[0038]在现有技术中的转移方法，将Micro LED芯片从高密度的转移板转移至低密度的阵列基板上，通常先去掉蓝宝石基板或砷化镓基板，再通过巨量转移把 Micro LED转移至对应显示器件的阵列基板上。但是，相关技术中的转移方法较为复杂，制造成本较高，且通常都会进行多次转移，转移的良率也无法保证。\n\n[0039]如图1所示，为本发明实施例提供的Micro LED的转移方法流程示意图，该方法包括以下步骤：\n\n[0040]S1：提供阵列基板，阵列基板一侧设置有粘结层，阵列基板的像素区包括多个薄膜晶体管；\n\n[0041]S2：将转移板转移至阵列基板上方，转移板靠近粘结层的一侧设置有层叠的缓冲层和芯片层，芯片层包括阵列分布的多个Micro LED芯片，且数量大于所述薄膜晶体管的数量，Micro LED芯片包括第一Micro LED芯片，第一Micro LED芯片的第一电极与薄膜晶体管的第二电极对应；\n\n[0042]S3：将掩膜版转移至转移板远离阵列基板的一侧，掩膜版的开口区与第一 MicroLED芯片对应；\n\n[0043]S4：通过掩膜版对转移板进行激光扫描，将第一Micro LED芯片从缓冲层剥离至粘结层上；\n\n[0044]S5：将第一Micro LED芯片的第一电极与薄膜晶体管的第二电极电性连接。\n\n[0045]下面结合图2至图7对本方法进行具体说明。\n\n[0046]在S1中，提供阵列基板，阵列基板一侧设置有粘结层，阵列基板的像素区包括多个薄膜晶体管。\n\n[0047]如图2所示，提供阵列基板10，在阵列基板10一侧设置有粘结层20。如图4所示，阵列基板10包括自下而上层叠设置的衬底101、有源层102、第一栅极绝缘层103、第一金属层104、第二栅极绝缘层105、第二金属层106、层间介质层107、源漏极层108。\n\n[0048]衬底101通常为刚性衬底如玻璃、透明树脂等，也可以为柔性衬底，如聚酰亚胺，本发明对衬底的结构不做限制。\n\n[0049]有源层102形成在衬底101上，有源层102的材料为金属氧化物，例如铟镓锌氧化物(IGZO)，但不以此为限，还可以是铝锌氧化物(AZO)、铟锌氧化物 (IZO)、氧化锌(ZnO)、氧化铟(In2O3)、硼掺杂氧化锌(BZO)、镁掺杂氧化锌(MZO) 中的一种或多种。此外，有源层102还可以是多晶硅材料或其它材料。\n\n[0050]在衬底101和有源层102之间还形成有缓冲层(图未示出)，缓冲层的材料可为氧化硅、氮化硅等无机材料。\n\n[0051]第一栅极绝缘层103形成在有源层102上，第一栅极绝缘层103的材料可为氧化硅、氮化硅等无机材料。\n\n[0052]第一金属层形成在第一栅极绝缘层103上，第一金属层的材料可为钼、铝、铜，但不以此为限，还可以是铬、钨、钛、钽以及包含它们的合金等材料，在此不对其材料做特殊限定。如图4所示，第一金属层经过蚀刻工艺图案化形成各薄膜晶体管的栅极104、扫描线和存储电容的第一极板。\n\n[0053]第二栅极绝缘层105形成在第一金属层上，第二栅极绝缘层105的材料可为氧化硅、氮化硅等无机材料。\n\n[0054]第二金属层106形成在第二栅极绝缘层105上，第二金属层106的材料可为钼、铝、铜，但不以此为限，还可以是铬、钨、钛、钽以及包含它们的合金等材料，在此不对其材料做特殊限定。第二金属层106图案化形成存储电容的第二极板。\n\n[0055]层间介质层107形成在第二金属层106上，层间介质层107材料可为氧化硅或氮化硅等无机材料。\n\n[0056]源漏极层形成在层间介质层107上，源漏极层的材料可为钼、铝、铜，但不以此为限，还可以是铬、钨、钛、钽以及包含它们的合金等材料，源漏极层经蚀刻工艺图案化形成各薄膜晶体管的源极108、漏极109和数据线。\n\n[0057]图3中仅示出了阵列基板10中一个薄膜晶体管的结构，阵列基板10的像素区包括多个薄膜晶体管，在本发明中薄膜晶体管为驱动晶体管，在阵列基板 10的像素区内，形成有多个像素驱动电路，每个像素驱动电路中包括有驱动晶体管，在后续将Micro LED芯片转移至阵列基板上时，驱动晶体管与Micro LED 芯片电性连接使其发光。\n\n[0058]粘结层20设置在阵列基板10上，可以仅覆盖像素区，也可以在阵列基板 10上整面覆盖，粘结层20的材料可以是异方性导电胶ACF或非导电胶NCF。\n\n[0059]在S2中，将转移板转移至阵列基板上方，转移板靠近粘结层的一侧设置有层叠的缓冲层和芯片层，芯片层包括阵列分布的多个Micro LED芯片，且数量大于所述薄膜晶体管的数量，Micro LED芯片包括第一Micro LED芯片，第一 Micro LED芯片的第一电极与薄膜晶体管的第二电极对应。\n\n[0060]如图2所示，转移板30被放置在阵列基板10的上方，转移板30靠近阵列基板10的一侧设置有缓冲层40，缓冲层40靠近所述阵列基板的一侧设置有芯片层，芯片层中设置有多个Micro LED芯片50，Micro LED芯片50包括第一 Micro LED芯片51，第一Micro LED芯片51的第一电极511与薄膜晶体管的第二电极对应。\n\n[0061]第一Micro LED芯片51为实际需要转移至阵列基板10上的Micro LED芯片，第一Micro LED芯片51包括第一电极511和第三电极512，其中第一电极 511为阳极或阴极中的一个，第三电极512为阳极或阴极中的另一个。阵列基板10中各薄膜晶体管包括第二电极和第四电极，其中第二电极为驱动晶体管的源极108或漏极109中的一个，第四晶体管为源极108或漏极109中的另一个。在后续将第一Micro LED芯片51和薄膜晶体管电连接后，第一Micro LED芯片51的第一电极511与薄膜晶体管的第二电极电连接，以驱动Micro LED芯片发光。在本步骤中，先将第一Micro LED芯片51的第一电极511与薄膜晶体管的第二电极对应放置，第一Micro LED芯片51的第一电极511可以与粘结层20接触，也可以与粘结层20相隔一定距离。\n\n[0062]如图4所示，为转移板30和Micro LED芯片50的俯视图，芯片层中Micro LED芯片50呈阵列分布，各Micro LED芯片50之间不接触，Micro LED芯片 50还包括第二Micro LED芯片52，第二Micro LED芯片52为不与薄膜晶体管对应的一类Micro LED芯片，在后续转移过程中不需要转移至阵列基板10中。\n\n[0063]由于Micro LED芯片50的尺寸通常很小，因此在转移板30上属于高密度分布，而阵列基板10上薄膜晶体管的尺寸相对于Micro LED芯片50较大，因此转移时，只需将第一Micro LED芯片51转移至阵列基板10上，而第二Micro LED芯片52仍然保留在转移板30上。\n\n[0064]转移板30通常为透光的蓝宝石板或石英板。缓冲层40为设置在转移板30 一侧，可以整层设置，也可以呈阵列方式设置，缓冲层40的材料为氮化镓。\n\n[0065]在S3中，将掩膜版转移至转移板远离阵列基板的一侧，掩膜版的开口区与第一Micro LED芯片对应。\n\n[0066]如图2所示，掩膜版60包括层叠设置的基底61和镀膜层62，其中镀膜层 62朝下靠近转移板30，基座61在上。基座61的材料为透光的蓝宝石或石英，镀膜层62的材料为不透光的金属，可以是Au、Mo、Mo/Cu合金、Cr、Ti中的至少一种。此外，在镀膜层62远离基座61的一侧，还可以设置保护层(图未示出)，保护层的材料可以是SiO2或Al2O3，用于防止镀膜层62发生氧化而变质。\n\n[0067]掩膜版60中基座61为整层设置，镀膜层62包括多个缺口，缺口形成掩膜板60的开口区621。如图5所示，开口区621呈阵列分布，且与第一Micro LED 芯片51所在的区域对应，开口区621的尺寸可以等于或大于第一Micro LED 芯片51的尺寸。由于第一Micro LED芯片51的第一电极511与薄膜晶体管的第二电极对应，而开口区621又与第一Micro LED芯片51所在的区域对应，因此三者实现了共同对准。\n\n[0068]在S4中，通过掩膜版对转移板进行激光扫描，将第一Micro LED芯片从缓冲层剥离至粘结层上。\n\n[0069]如图2所示，使用激光发射器70通过掩膜版60对转移板30进行激光扫描，扫描时可以采用对掩膜版60整面扫描的方式，也可以只对开口区621进行扫描。\n\n[0070]在上一步骤中，转移板30和掩膜板60的基座61均为透光材料，且对激光的透过率相同，而掩膜板60的镀膜层62为不透光材料，激光不能透过。因此，激光发射器70发射的激光只能穿过开口区621，照射至缓冲层40上。\n\n[0071]在一种实施中，激光发射器70发射的激光波长为266纳米。由于缓冲层 40的材料为氮化镓，在266纳米的激光照射下，氮化镓分解为镓和氮气，因此开口区621内的缓冲层40不再能连接第一Micro LED芯片51，第一Micro LED 芯片51剥离下来，与阵列基板10上的粘结层20接触。由于粘结层20为异方性导电胶或非导电胶，粘度较大，因此可以实现第一Micro LED芯片51的第一电极511与粘结层20的紧密黏结。\n\n[0072]将第一Micro LED芯片51从缓冲层40上剥离后，将阵列基板10移走，此时阵列基板10、粘结层20和第一Micro LED芯片51的相对位置如图6和图 7所示，阵列基板10上的各薄膜晶体管，均有第一Micro LED芯片51与之对应。\n\n[0073]缓冲层40分解成为镓和氮气后，会有镓残留在第一Micro LED芯片51的表面上，这会影响Micro LED的出光效率。因此，还需用盐酸清洗粘结层20 上的第一Micro LED芯片51表面。在一种实施例中，采用盐酸为稀盐酸，即质量分数小于20％的盐酸。清洗后再进行干燥处理。\n\n[0074]在S5中，将第一Micro LED芯片的第一电极与薄膜晶体管的第二电极电性连接。\n\n[0075]在一种实施例中，可以对第一Micro LED芯片进行加压和加热处理，将第一MicroLED芯片51的第一电极511与薄膜晶体管的第二电极电性连接，第一Micro LED芯片51在薄膜晶体管的驱动下发光。至此，实现了将第一Micro LED芯片51从高密度的转移板30转移至低密度的阵列基板10上。\n\n[0076]由于阵列基板10中薄膜晶体管呈等间距阵列设置，因此阵列分布的Micro LED芯片50在芯片层中同样也是等间距设置。在完成第一个阵列基板10中第一Micro LED芯片51的转移后，将此块阵列基板10移走，在相同的位置补上第二块同样型号的阵列基板10，该阵列基板10上同样也设置有粘结层20。\n\n[0077]此时，转移板30中还剩下多个第二Micro LED芯片52，第二Micro LED 芯片52中的电极与本次放置的第二块阵列基板10中薄膜晶体管的电极不对应。保持转移板30位置不变，将掩膜板60和第二块阵列基板10一起，沿转移板 30的一条边移动一段距离，该距离等于转移板30中相邻两个Micro LED芯片 50的间距。在移动完成后，第二Micro LED芯片52中的一部分作为新的第一 Micro LED芯片51，新的第一Micro LED芯片51中的第一电极511、第二块阵列基板10中薄膜晶体管的第二电极以及开口区621重新实现对应，重复上述激光扫描的电性连接步骤，实现新的第一Micro LED芯片51向第二块阵列基板 10上的转移。依次类推，直至转移板30上的所有Micro LED芯片50均转移至阵列基板10上。\n\n[0078]在上述移动过程中，是将转移板30固定，移动掩膜板60和阵列基板10，也可以将掩膜板60和阵列基板10固定，将转移板30沿自身的一条边移动一段距离，该距离同样等于转移板30中相邻两个Micro LED芯片50的间距，本领域的设计人员可根据需要选择移动和固定的目标。\n\n[0079]本发明的转移方法，通过将薄膜晶体管的第二电极、第一Micro LED芯片 51的第一电极以及开口区621三者对应起来，通过激光的方式选择性扫描，实现了Micro LED芯片从高密度基板到低密度基板的定向转移，仅需通过一次转移就可实现Micro LED的巨量转移，因此简化了转移工序，提高了转移良率。\n\n[0080]本发明提供一种Micro LED的转移方法，包括：提供阵列基板，阵列基板一侧设置有粘结层，阵列基板的像素区包括多个薄膜晶体管；将转移板转移至阵列基板上方，转移板靠近粘结层的一侧设置有层叠的缓冲层和芯片层，芯片层包括阵列分布的多个Micro LED芯片，且数量大于薄膜晶体管的数量，Micro LED芯片包括第一Micro LED芯片，第一MicroLED芯片的第一电极与薄膜晶体管的第二电极对应；将掩膜版转移至转移板远离阵列基板的一侧，掩膜版的开口区与第一Micro LED芯片对应；通过掩膜版对转移板进行激光扫描，将第一Micro LED芯片从缓冲层剥离至粘结层上；将第一Micro LED芯片的第一电极与薄膜晶体管的第二电极电性连接。本发明使用激光通过掩膜版的方式选择性剥离，实现了MicroLED芯片从高密度基板到低密度基板的定向转移，仅需通过一次转移就可实现Micro LED的巨量转移，因此简化了转移工序，提高了转移良率。\n\n[0081]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0082]以上对本申请实施例所提供的一种Micro LED的转移方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种Micro LED的转移方法。\n\n背景技术\n\n[0002]Micro LED显示器相比OLED显示器具有可靠性高，色域高，亮度高，透明度高，PPI高的优点，且封装要求低，更容易实现柔性及无缝拼接显示，是未来极具有发展潜力的未来显示器。\n\n[0003]现有的Micro LED在应用于大尺寸显示器件中时，通常先去掉蓝宝石基板或砷化镓基板，再通过巨量转移把Micro LED转移至对应显示器件的TFT基板上。然而，由于MicroLED在从高密度的蓝宝石基板或砷化镓基板转移至低密度的TFT基板上时，需要进行选择性的转移，因此通常都会进行多次转移，且在多次转移过程中还会存在转移良率问题。\n\n[0004]因此，现有的Micro LED存在多次转移影响转移良率的技术问题，需要改进。\n\n发明内容\n\n[0005]本发明提供一种Micro LED的转移方法，以缓解现有的Micro LED多次转移影响转移良率的技术问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明提供一种Micro LED的转移方法，包括：\n\n[0008]提供阵列基板，所述阵列基板一侧设置有粘结层，所述阵列基板的像素区包括多个薄膜晶体管；\n\n[0009]将转移板转移至所述阵列基板上方，所述转移板靠近所述粘结层的一侧设置有层叠的缓冲层和芯片层，所述芯片层包括阵列分布的多个Micro LED芯片，且数量大于所述薄膜晶体管的数量，所述Micro LED芯片包括第一Micro LED 芯片，所述第一Micro LED芯片的第一电极与所述薄膜晶体管的第二电极对应；\n\n[0010]将掩膜版转移至所述转移板远离所述阵列基板的一侧，所述掩膜版的开口区与所述第一Micro LED芯片对应；\n\n[0011]通过所述掩膜版对所述转移板进行激光扫描，将所述第一Micro LED芯片从所述缓冲层剥离至所述粘结层上；\n\n[0012]将所述第一Micro LED芯片的第一电极与所述薄膜晶体管的第二电极电性连接。\n\n[0013]在本发明的Micro LED的转移方法中，所述提供阵列基板，所述阵列基板一侧设置有粘结层，所述阵列基板的像素区包括多个薄膜晶体管的步骤包括：在所述阵列基板一侧设置材料为异方性导电胶的粘结层。\n\n[0014]在本发明的Micro LED的转移方法中，所述提供阵列基板，所述阵列基板一侧设置有粘结层，所述阵列基板的像素区包括多个薄膜晶体管的步骤包括：在所述阵列基板一侧设置材料为非导电胶的粘结层。\n\n[0015]在本发明的Micro LED的转移方法中，所述将转移板转移至所述阵列基板上方，所述转移板靠近所述粘结层的一侧设置有层叠的缓冲层和芯片层的步骤包括：将转移板转移至所述阵列基板上方，所述转移板靠近所述粘结层的一侧设置有材料为氮化镓的缓冲层。\n\n[0016]在本发明的Micro LED的转移方法中，所述通过所述掩膜版对所述转移板进行激光扫描，将所述第一Micro LED芯片从所述缓冲层剥离至所述粘结层上的步骤包括：通过所述掩膜版对所述转移板进行激光扫描，将所述开口区对应的缓冲层分解。\n\n[0017]在本发明的Micro LED的转移方法中，在所述通过所述掩膜版对所述转移板进行激光扫描，将所述第一Micro LED芯片从所述缓冲层剥离至所述粘结层上的步骤之后，还包括：用盐酸清洗所述粘结层上的第一Micro LED芯片表面。\n\n[0018]在本发明的Micro LED的转移方法中，所述将掩膜版转移至所述转移板远离所述阵列基板的一侧的步骤包括：将掩膜版转移至所述转移板远离所述阵列基板的一侧，所述掩膜板包括层叠设置的基底和镀膜层，所述镀膜层靠近所述转移板，所述基底和所述转移板对激光的透过率相同。\n\n[0019]在本发明的Micro LED的转移方法中，所述通过所述掩膜版对所述转移板进行激光扫描的步骤包括：使用激光发射器对所述掩膜板进行整面扫描。\n\n[0020]在本发明的Micro LED的转移方法中，所述通过所述掩膜版对所述转移板进行激光扫描的步骤包括：使用激光发射器对所述掩膜板的开口区进行扫描。\n\n[0021]在本发明的Micro LED的转移方法中，所述将所述第一Micro LED芯片的第一电极与所述薄膜晶体管的第二电极电性连接的步骤包括：对所述第一Micro LED芯片进行加压和加热处理，将所述第一Micro LED芯片的第一电极与所述薄膜晶体管的第二电极电性连接。\n\n[0022]本发明的有益效果为：本发明提供一种Micro LED的转移方法，包括：提供阵列基板，所述阵列基板一侧设置有粘结层，所述阵列基板的像素区包括多个薄膜晶体管；将转移板转移至所述阵列基板上方，所述转移板靠近所述粘结层的一侧设置有层叠的缓冲层和芯片层，所述芯片层包括阵列分布的多个Micro LED芯片，且数量大于所述薄膜晶体管的数量，所述Micro LED芯片包括第一 Micro LED芯片，所述第一Micro LED芯片的第一电极与所述薄膜晶体管的第二电极对应；将掩膜版转移至所述转移板远离所述阵列基板的一侧，所述掩膜版的开口区与所述第一Micro LED芯片对应；通过所述掩膜版对所述转移板进行激光扫描，将所述第一Micro LED芯片从所述缓冲层剥离至所述粘结层上；将所述第一Micro LED芯片的第一电极与所述薄膜晶体管的第二电极电性连接。本发明使用激光通过掩膜版的方式选择性剥离，实现了Micro LED芯片从高密度基板到低密度基板的定向转移，仅需通过一次转移就可实现Micro LED 的巨量转移，因此简化了转移工序，提高了转移良率。\n\n附图说明\n\n[0023]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0024]图1为本发明实施例提供的Micro LED的转移方法流程示意图。\n\n[0025]图2为本发明实施例提供的Micro LED的转移方法中Micro LED芯片转移前各组件位置示意图。\n\n[0026]图3为本发明实施例提供的Micro LED的转移方法中阵列基板的膜层结构示意图。\n\n[0027]图4为本发明实施例提供的Micro LED的转移方法中转移板和Micro LED 芯片俯视示意图。\n\n[0028]图5为本发明实施例提供的Micro LED的转移方法中掩膜版俯视示意图。\n\n[0029]图6为本发明实施例提供的Micro LED的转移方法中Micro LED芯片转移后各组件位置示意图。\n\n[0030]图7为本发明实施例提供的Micro LED的转移方法中Micro LED芯片转移后各组件位置俯视示意图。\n\n具体实施方式\n\n[0031]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0032]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0033]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0034]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0035]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0036]本发明提供一种Micro LED的转移方法，以缓解现有的Micro LED多次转移影响转移良率的技术问题。\n\n[0037]微发光二极管(Micro LED)显示面板与传统的液晶显示面板相比，具有分辨率更高、对比度更好、响应时间更快及能耗更低等优点，因而被视为下一代显示技术。Micro LED芯片在制作完成之后，需要将几万至几十万个Micro LED 芯片转移到阵列基板上形成LED阵列，这一过程被称为“巨量转移”。\n\n[0038]在现有技术中的转移方法，将Micro LED芯片从高密度的转移板转移至低密度的阵列基板上，通常先去掉蓝宝石基板或砷化镓基板，再通过巨量转移把 Micro LED转移至对应显示器件的阵列基板上。但是，相关技术中的转移方法较为复杂，制造成本较高，且通常都会进行多次转移，转移的良率也无法保证。\n\n[0039]如图1所示，为本发明实施例提供的Micro LED的转移方法流程示意图，该方法包括以下步骤：\n\n[0040]S1：提供阵列基板，阵列基板一侧设置有粘结层，阵列基板的像素区包括多个薄膜晶体管；\n\n[0041]S2：将转移板转移至阵列基板上方，转移板靠近粘结层的一侧设置有层叠的缓冲层和芯片层，芯片层包括阵列分布的多个Micro LED芯片，且数量大于所述薄膜晶体管的数量，Micro LED芯片包括第一Micro LED芯片，第一Micro LED芯片的第一电极与薄膜晶体管的第二电极对应；\n\n[0042]S3：将掩膜版转移至转移板远离阵列基板的一侧，掩膜版的开口区与第一 MicroLED芯片对应；\n\n[0043]S4：通过掩膜版对转移板进行激光扫描，将第一Micro LED芯片从缓冲层剥离至粘结层上；\n\n[0044]S5：将第一Micro LED芯片的第一电极与薄膜晶体管的第二电极电性连接。\n\n[0045]下面结合图2至图7对本方法进行具体说明。\n\n[0046]在S1中，提供阵列基板，阵列基板一侧设置有粘结层，阵列基板的像素区包括多个薄膜晶体管。\n\n[0047]如图2所示，提供阵列基板10，在阵列基板10一侧设置有粘结层20。如图4所示，阵列基板10包括自下而上层叠设置的衬底101、有源层102、第一栅极绝缘层103、第一金属层104、第二栅极绝缘层105、第二金属层106、层间介质层107、源漏极层108。\n\n[0048]衬底101通常为刚性衬底如玻璃、透明树脂等，也可以为柔性衬底，如聚酰亚胺，本发明对衬底的结构不做限制。\n\n[0049]有源层102形成在衬底101上，有源层102的材料为金属氧化物，例如铟镓锌氧化物(IGZO)，但不以此为限，还可以是铝锌氧化物(AZO)、铟锌氧化物 (IZO)、氧化锌(ZnO)、氧化铟(In2O3)、硼掺杂氧化锌(BZO)、镁掺杂氧化锌(MZO) 中的一种或多种。此外，有源层102还可以是多晶硅材料或其它材料。\n\n[0050]在衬底101和有源层102之间还形成有缓冲层(图未示出)，缓冲层的材料可为氧化硅、氮化硅等无机材料。\n\n[0051]第一栅极绝缘层103形成在有源层102上，第一栅极绝缘层103的材料可为氧化硅、氮化硅等无机材料。\n\n[0052]第一金属层形成在第一栅极绝缘层103上，第一金属层的材料可为钼、铝、铜，但不以此为限，还可以是铬、钨、钛、钽以及包含它们的合金等材料，在此不对其材料做特殊限定。如图4所示，第一金属层经过蚀刻工艺图案化形成各薄膜晶体管的栅极104、扫描线和存储电容的第一极板。\n\n[0053]第二栅极绝缘层105形成在第一金属层上，第二栅极绝缘层105的材料可为氧化硅、氮化硅等无机材料。\n\n[0054]第二金属层106形成在第二栅极绝缘层105上，第二金属层106的材料可为钼、铝、铜，但不以此为限，还可以是铬、钨、钛、钽以及包含它们的合金等材料，在此不对其材料做特殊限定。第二金属层106图案化形成存储电容的第二极板。\n\n[0055]层间介质层107形成在第二金属层106上，层间介质层107材料可为氧化硅或氮化硅等无机材料。\n\n[0056]源漏极层形成在层间介质层107上，源漏极层的材料可为钼、铝、铜，但不以此为限，还可以是铬、钨、钛、钽以及包含它们的合金等材料，源漏极层经蚀刻工艺图案化形成各薄膜晶体管的源极108、漏极109和数据线。\n\n[0057]图3中仅示出了阵列基板10中一个薄膜晶体管的结构，阵列基板10的像素区包括多个薄膜晶体管，在本发明中薄膜晶体管为驱动晶体管，在阵列基板 10的像素区内，形成有多个像素驱动电路，每个像素驱动电路中包括有驱动晶体管，在后续将Micro LED芯片转移至阵列基板上时，驱动晶体管与Micro LED 芯片电性连接使其发光。\n\n[0058]粘结层20设置在阵列基板10上，可以仅覆盖像素区，也可以在阵列基板 10上整面覆盖，粘结层20的材料可以是异方性导电胶ACF或非导电胶NCF。\n\n[0059]在S2中，将转移板转移至阵列基板上方，转移板靠近粘结层的一侧设置有层叠的缓冲层和芯片层，芯片层包括阵列分布的多个Micro LED芯片，且数量大于所述薄膜晶体管的数量，Micro LED芯片包括第一Micro LED芯片，第一 Micro LED芯片的第一电极与薄膜晶体管的第二电极对应。\n\n[0060]如图2所示，转移板30被放置在阵列基板10的上方，转移板30靠近阵列基板10的一侧设置有缓冲层40，缓冲层40靠近所述阵列基板的一侧设置有芯片层，芯片层中设置有多个Micro LED芯片50，Micro LED芯片50包括第一 Micro LED芯片51，第一Micro LED芯片51的第一电极511与薄膜晶体管的第二电极对应。\n\n[0061]第一Micro LED芯片51为实际需要转移至阵列基板10上的Micro LED芯片，第一Micro LED芯片51包括第一电极511和第三电极512，其中第一电极 511为阳极或阴极中的一个，第三电极512为阳极或阴极中的另一个。阵列基板10中各薄膜晶体管包括第二电极和第四电极，其中第二电极为驱动晶体管的源极108或漏极109中的一个，第四晶体管为源极108或漏极109中的另一个。在后续将第一Micro LED芯片51和薄膜晶体管电连接后，第一Micro LED芯片51的第一电极511与薄膜晶体管的第二电极电连接，以驱动Micro LED芯片发光。在本步骤中，先将第一Micro LED芯片51的第一电极511与薄膜晶体管的第二电极对应放置，第一Micro LED芯片51的第一电极511可以与粘结层20接触，也可以与粘结层20相隔一定距离。\n\n[0062]如图4所示，为转移板30和Micro LED芯片50的俯视图，芯片层中Micro LED芯片50呈阵列分布，各Micro LED芯片50之间不接触，Micro LED芯片 50还包括第二Micro LED芯片52，第二Micro LED芯片52为不与薄膜晶体管对应的一类Micro LED芯片，在后续转移过程中不需要转移至阵列基板10中。\n\n[0063]由于Micro LED芯片50的尺寸通常很小，因此在转移板30上属于高密度分布，而阵列基板10上薄膜晶体管的尺寸相对于Micro LED芯片50较大，因此转移时，只需将第一Micro LED芯片51转移至阵列基板10上，而第二Micro LED芯片52仍然保留在转移板30上。\n\n[0064]转移板30通常为透光的蓝宝石板或石英板。缓冲层40为设置在转移板30 一侧，可以整层设置，也可以呈阵列方式设置，缓冲层40的材料为氮化镓。\n\n[0065]在S3中，将掩膜版转移至转移板远离阵列基板的一侧，掩膜版的开口区与第一Micro LED芯片对应。\n\n[0066]如图2所示，掩膜版60包括层叠设置的基底61和镀膜层62，其中镀膜层 62朝下靠近转移板30，基座61在上。基座61的材料为透光的蓝宝石或石英，镀膜层62的材料为不透光的金属，可以是Au、Mo、Mo/Cu合金、Cr、Ti中的至少一种。此外，在镀膜层62远离基座61的一侧，还可以设置保护层(图未示出)，保护层的材料可以是SiO2或Al2O3，用于防止镀膜层62发生氧化而变质。\n\n[0067]掩膜版60中基座61为整层设置，镀膜层62包括多个缺口，缺口形成掩膜板60的开口区621。如图5所示，开口区621呈阵列分布，且与第一Micro LED 芯片51所在的区域对应，开口区621的尺寸可以等于或大于第一Micro LED 芯片51的尺寸。由于第一Micro LED芯片51的第一电极511与薄膜晶体管的第二电极对应，而开口区621又与第一Micro LED芯片51所在的区域对应，因此三者实现了共同对准。\n\n[0068]在S4中，通过掩膜版对转移板进行激光扫描，将第一Micro LED芯片从缓冲层剥离至粘结层上。\n\n[0069]如图2所示，使用激光发射器70通过掩膜版60对转移板30进行激光扫描，扫描时可以采用对掩膜版60整面扫描的方式，也可以只对开口区621进行扫描。\n\n[0070]在上一步骤中，转移板30和掩膜板60的基座61均为透光材料，且对激光的透过率相同，而掩膜板60的镀膜层62为不透光材料，激光不能透过。因此，激光发射器70发射的激光只能穿过开口区621，照射至缓冲层40上。\n\n[0071]在一种实施中，激光发射器70发射的激光波长为266纳米。由于缓冲层 40的材料为氮化镓，在266纳米的激光照射下，氮化镓分解为镓和氮气，因此开口区621内的缓冲层40不再能连接第一Micro LED芯片51，第一Micro LED 芯片51剥离下来，与阵列基板10上的粘结层20接触。由于粘结层20为异方性导电胶或非导电胶，粘度较大，因此可以实现第一Micro LED芯片51的第一电极511与粘结层20的紧密黏结。\n\n[0072]将第一Micro LED芯片51从缓冲层40上剥离后，将阵列基板10移走，此时阵列基板10、粘结层20和第一Micro LED芯片51的相对位置如图6和图 7所示，阵列基板10上的各薄膜晶体管，均有第一Micro LED芯片51与之对应。\n\n[0073]缓冲层40分解成为镓和氮气后，会有镓残留在第一Micro LED芯片51的表面上，这会影响Micro LED的出光效率。因此，还需用盐酸清洗粘结层20 上的第一Micro LED芯片51表面。在一种实施例中，采用盐酸为稀盐酸，即质量分数小于20％的盐酸。清洗后再进行干燥处理。\n\n[0074]在S5中，将第一Micro LED芯片的第一电极与薄膜晶体管的第二电极电性连接。\n\n[0075]在一种实施例中，可以对第一Micro LED芯片进行加压和加热处理，将第一MicroLED芯片51的第一电极511与薄膜晶体管的第二电极电性连接，第一Micro LED芯片51在薄膜晶体管的驱动下发光。至此，实现了将第一Micro LED芯片51从高密度的转移板30转移至低密度的阵列基板10上。\n\n[0076]由于阵列基板10中薄膜晶体管呈等间距阵列设置，因此阵列分布的Micro LED芯片50在芯片层中同样也是等间距设置。在完成第一个阵列基板10中第一Micro LED芯片51的转移后，将此块阵列基板10移走，在相同的位置补上第二块同样型号的阵列基板10，该阵列基板10上同样也设置有粘结层20。\n\n[0077]此时，转移板30中还剩下多个第二Micro LED芯片52，第二Micro LED 芯片52中的电极与本次放置的第二块阵列基板10中薄膜晶体管的电极不对应。保持转移板30位置不变，将掩膜板60和第二块阵列基板10一起，沿转移板 30的一条边移动一段距离，该距离等于转移板30中相邻两个Micro LED芯片 50的间距。在移动完成后，第二Micro LED芯片52中的一部分作为新的第一 Micro LED芯片51，新的第一Micro LED芯片51中的第一电极511、第二块阵列基板10中薄膜晶体管的第二电极以及开口区621重新实现对应，重复上述激光扫描的电性连接步骤，实现新的第一Micro LED芯片51向第二块阵列基板 10上的转移。依次类推，直至转移板30上的所有Micro LED芯片50均转移至阵列基板10上。\n\n[0078]在上述移动过程中，是将转移板30固定，移动掩膜板60和阵列基板10，也可以将掩膜板60和阵列基板10固定，将转移板30沿自身的一条边移动一段距离，该距离同样等于转移板30中相邻两个Micro LED芯片50的间距，本领域的设计人员可根据需要选择移动和固定的目标。\n\n[0079]本发明的转移方法，通过将薄膜晶体管的第二电极、第一Micro LED芯片 51的第一电极以及开口区621三者对应起来，通过激光的方式选择性扫描，实现了Micro LED芯片从高密度基板到低密度基板的定向转移，仅需通过一次转移就可实现Micro LED的巨量转移，因此简化了转移工序，提高了转移良率。\n\n[0080]本发明提供一种Micro LED的转移方法，包括：提供阵列基板，阵列基板一侧设置有粘结层，阵列基板的像素区包括多个薄膜晶体管；将转移板转移至阵列基板上方，转移板靠近粘结层的一侧设置有层叠的缓冲层和芯片层，芯片层包括阵列分布的多个Micro LED芯片，且数量大于薄膜晶体管的数量，Micro LED芯片包括第一Micro LED芯片，第一MicroLED芯片的第一电极与薄膜晶体管的第二电极对应；将掩膜版转移至转移板远离阵列基板的一侧，掩膜版的开口区与第一Micro LED芯片对应；通过掩膜版对转移板进行激光扫描，将第一Micro LED芯片从缓冲层剥离至粘结层上；将第一Micro LED芯片的第一电极与薄膜晶体管的第二电极电性连接。本发明使用激光通过掩膜版的方式选择性剥离，实现了MicroLED芯片从高密度基板到低密度基板的定向转移，仅需通过一次转移就可实现Micro LED的巨量转移，因此简化了转移工序，提高了转移良率。\n\n[0081]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0082]以上对本申请实施例所提供的一种Micro LED的转移方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10744, 23798, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种微发光二极管显示基板及其制备方法。\n\n背景技术\n\n[0002]发光二极管(Light Emitting Diode，简称LED)是一种能够将电能转换成特定波长范围的光的半导体元件。发光二极管的发光原理是电子在N型半导体与P型半导体间移动的能量差以光的形式释放。发光二极管具有低功耗、尺寸小、亮度高、易与集成电路匹配及可靠性高等优点，目前常作为光源被广泛应用。随着LED技术的成熟，直接使用LED作为点像素的LED显示器或微发光二极管(Micro LED)显示器逐渐发展起来。\n\n[0003]Micro LED显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的自发光显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级。其中，在Micro LED显示器的制作过程，先在供给基板(如蓝宝石类基板)上通过分子束外延的方法生长出多个微小化、薄膜化以及阵列化的Micro LED颗粒，再将这些MicroLED颗粒从供给基板转移到用于形成显示面板的接收基板上排成显示阵列。\n\n[0004]然而，转移Micro LED颗粒涉及巨量且微小的发光二级管精确转移，精确绑定等问题。目前已知的Micro LED与TFT阵列基板(即接收基板)间的电极连接绑定(Bonding)方案中，大多数方法为Micro LED转移到TFT阵列基板，与基板上预图案化的绑定材料进行电极粘合绑定。所述电极粘合绑定较多采用AuSn、InSn等类似的低熔点金属进行粘合绑定，涉及绑定材料固相-液相-固相转化，邦定过程复杂，可靠性低，容易造成绑定不良，导致修复成本增加。\n\n[0005]因此，如何简化转移Micro LED颗粒时的邦定操作，提高邦定可靠性，提高器件制作良率，成为现有Micro LED显示技术发展亟需改进的技术问题。\n\n发明内容\n\n[0006]本申请的目的在于，针对现有技术存在的问题，提供一种微发光二极管显示基板及其制备方法，可以简化转移Micro LED颗粒时的邦定操作，避免Micro LED与TFT阵列基板连接出现差异性，提高邦定可靠性，提高器件制作良率。\n\n[0007]为实现上述目的，本申请提供了一种微发光二极管显示基板的制备方法，包括如下步骤：提供一衬底基板；在所述衬底基板上形成一像素定义层并进行图案化，形成一绑定孔；在像素定义层上形成一底电极层，所述底电极层包括相互绝缘的一第一底电极及一第二底电极；在所述底电极层上对应于所述绑定孔处形成一粘合层；提供一转运基板，所述转运基板上包括至少一剥离层及至少一微发光二极管结构，所述微发光二极管结构通过所述剥离层与所述转运基板固定连接，所述微发光二极管结构包括一第一侧电极和一第二侧电极，所述剥离层在所述第二侧电极处与所述微发光二极管结构形成第一底切结构；将所述微发光二极管结构与所述粘合层粘合，并剥离所述转运基板；在所述剥离层上形成一顶电极层，所述顶电极层包括一顶电极、一第一自对准导线及一第二自对准导线，且所述顶电极与所述第二自对准导线绝缘；其中，所述顶电极通过所述第一自对准导线与所述第一侧电极及所述第一底电极连接绑定，所述第二侧电极通过所述第二自对准导线与所述第二底电极连接绑定。\n\n[0008]为实现上述目的，本申请还提供了一种微发光二极管显示基板，所述微发光二极管显示基板包括：一衬底基板；一像素定义层，设置于所述衬底基板上，所述像素定义层具有一绑定孔；一底电极层，设置于所述像素定义层上，所述底电极层包括相互绝缘的一第一底电极及一第二底电极；一粘合层，设置于所述底电极层上且对应于所述绑定孔；一微发光二极管结构，嵌入所述粘合层中，所述微发光二极管结构包括一第一侧电极和一第二侧电极；一剥离层，设置于所述微发光二极管结构上，并在所述第二侧电极处与所述微发光二极管结构形成第一底切结构；以及一顶电极层，设置于所述剥离层上，所述顶电极层包括一顶电极、一第一自对准导线及一第二自对准导线，且所述顶电极与所述第二自对准导线绝缘；其中，所述顶电极通过所述第一自对准导线与所述第一侧电极及所述第一底电极连接绑定，所述第二侧电极通过所述第二自对准导线与所述第二底电极连接绑定。\n\n[0009]本申请的优点在于：本申请Micro LED结构与接收基板通过有机粘合剂固定，Micro LED结构两侧设有电极，其上带有底切结构；接收基板上也带有底切结构，仅采用开放式掩膜板沉积电极材料，即可获得顶电极及连接Micro LED结构与接收基板间电极的自对准导线，操作相对简单，且电极间具有良好的绝缘性，不需要精确的金属掩膜板沉膜技术，有效节省了生产成本。采用本申请所述的制备方法，可以一次性完成所有Micro LED结构与接收基板间对应电极间的连接，且可以避免每颗Micro LED结构与接收基板连接出现差异性，提高器件制作良率。同时，由于该底切结构，有效保证所形成的像素间相互绝缘。\n\n附图说明\n\n[0010]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。\n\n[0011]图1为本申请微发光二极管显示基板的制备方法的流程图；\n\n[0012]图2-图14为本申请微发光二极管显示基板的制备方法一实施例的制备流程图；\n\n[0013]图15A-图15E为本申请微发光二极管结构的制备方法一实施例的制备流程图。\n\n具体实施方式\n\n[0014]下面详细描述本申请的实施方式，所述实施方式的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的组件或具有相同或类似功能的组件。本申请的说明书和权利要求书以及附图中的术语“第一”“第二”“第三”等(如果存在)是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。应当理解，这样描述的对象在适当情况下可以互换。此外，术语“包括”和“具有”以及它们的任何变形，意图在于覆盖不排它的包含。本申请所提到的方向用语，例如：上、下、左、右、前、后、内、外、侧面等，仅是参考附图的方向。\n\n[0015]以下通过参考附图描述的实施方式及使用的方向用语是示例性的，仅用于解释本申请，而不能理解为对本申请的限制。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其它工艺的应用和/或其它材料的使用。\n\n[0016]本申请提出一种微发光二极管显示基板设计，Micro LED结构与接收基板通过有机粘合剂固定，Micro LED结构两侧设有电极，其上带有底切结构；接收基板上也带有底切结构，仅采用开放式掩膜板(Open Mask)沉积电极材料，即可获得顶电极及连接Micro LED结构与接收基板间电极的自对准导线，操作相对简单，且电极间具有良好的绝缘性，不需要精确的金属掩膜板(Fine Metal Mask)沉膜技术，有效节省了生产成本。采用本申请所述的制备方法，可以一次性完成所有Micro LED结构与接收基板间对应电极间的连接，且可以避免每颗Micro LED结构与接收基板连接出现差异性，提高器件制作良率。同时，由于该底切结构，有效保证所形成的像素间相互绝缘。\n\n[0017]请一并参阅图1、图2-图14，其中，图1为本申请微发光二极管显示基板的制备方法的流程图，图2-图14为本申请微发光二极管显示基板的制备方法一实施例的制备流程图。\n\n[0018]所述制备方法包括如下步骤：S11：提供一衬底基板；S12：在所述衬底基板上形成一像素定义层并进行图案化，形成一绑定孔；S13：在像素定义层上形成一底电极层，所述底电极层包括相互绝缘的一第一底电极及一第二底电极；S14：在所述底电极层上对应于所述绑定孔处形成一粘合层；S15：提供一转运基板，所述转运基板上包括至少一剥离层及至少一微发光二极管结构，所述微发光二极管结构的第一表面通过所述剥离层与所述转运基板固定连接，所述微发光二极管结构包括一第一侧电极和一第二侧电极，所述剥离层在所述第二侧电极处与所述微发光二极管结构形成第一底切结构；S16：将所述微发光二极管结构的第二表面与所述粘合层粘合，并剥离所述转运基板；以及S17：在所述剥离层上形成一顶电极层，所述顶电极层包括一顶电极、一第一自对准导线及一第二自对准导线，且所述顶电极与所述第二自对准导线绝缘。其中，所述顶电极通过所述第一自对准导线与所述第一侧电极及所述第一底电极连接绑定，所述第二侧电极通过所述第二自对准导线与所述第二底电极连接绑定。\n\n[0019]关于步骤S11：提供一衬底基板，请一并参阅图1及图2-图5。在本实施例中，所述衬底基板包括一TFT层，即所述衬底基板为一TFT阵列基板。具体的，所述TFT层采用以下流程制备：\n\n[0020]1)在一第一衬底201上形成TFT的有源层211，如图2所示。在一实施例中，可以在一具有缓冲层(Buffer)的玻璃衬底(Glass)上沉积氧化物半导体膜层，并图案化，形成氧化物有源层。所述氧化物半导体膜层采用的材料可以为：IGZO、IZO、IGO、IGTO、IGZTO等。\n\n[0021]2)在所述第一衬底201上依次形成栅极绝缘层(GI)202及所述TFT的栅极(GE)212，如图3所示。在一实施例中，可以在所述第一衬底201上沉积栅极绝缘材料并图案化，形成所述栅极绝缘层202；所述栅极绝缘层202可以为SiOx层、SiNx层、AlOx层，或SiNx/SiOx叠层等。在一实施例中，可以在所述栅极绝缘层202上沉积栅极金属电极材料并图案化，形成所述栅极212。所述栅极可以为Cu/Mo叠层、Cu/MoTi叠层、Cu/Ti叠层，Al/Mo叠层，CuNb合金等。\n\n[0022]3)在所述第一衬底201上形成中间电介质层(ILD)203，并进行开孔，形成源漏极接触孔2031，所述中间电介质层203覆盖所述栅极212及所述栅极绝缘层202，如图4所示。在一实施例中，可以在所述第一衬底201上沉积中间电介质材料形成所述中间电介质层203，并在所述中间电介质层203上对应所述有源层211两端处开孔，形成所述源漏极接触孔2031。所述中间电介质层203可为SiOx层，SiNx叠层，或SiOx/SiNx叠层等。\n\n[0023]4)在所述中间电介质层203上依次形成源漏极层(S/D)及钝化层(PV)205，所述源漏极层包括所述TFT的源极(S)213和漏极(D)214，及电源走线(VSS)215，所述源极213和漏极214分别与所述有源层211两端的源/漏极接触区接触，如图5所示。在一实施例中，可以在所述中间电介质层203上沉积源/漏极金属电极材料并图案化，形成所述源极213、漏极214、电源走线215；所述源漏极层可以为Cu/Mo叠层、Cu/MoTi叠层、Cu/Ti叠层，Al/Mo叠层，CuNb合金等。所述钝化层205可为SiNx层、SiOx层、或SiOx/SiOx叠层等。\n\n[0024]关于步骤S12：在所述衬底基板上形成一像素定义层并进行图案化，形成一绑定孔，请一并参阅图1及图6。所述像素定义层205的材料可以为有机材料。所述绑定孔2051用于定义Micro LED结构的绑定位置。\n\n[0025]进一步的实施例中，对所述像素定义层205进行图案化，形成所述绑定孔2051的同时，在所述像素定义层205上对应于所述绑定孔2051两侧分别形成隔离凹槽2052。所述隔离凹槽2052可以在后续的顶部电极沉积时用于定义绝缘隔离线，所述隔离凹槽2052的凹槽底部可以位于所述像素定义层205内，也可以位于所述钝化层205上。\n\n[0026]关于步骤S13：在像素定义层上形成一底电极层，所述底电极层包括相互绝缘的一第一底电极及一第二底电极，请一并参阅图1及图7。可以采用掩膜板在所述像素定义层205上沉积底部像素电极(PE_bottom)材料，形成相互绝缘的所述第一底电极221及所述第二底电极222。\n\n[0027]进一步的实施例中，可以在所述钝化层205上对应所述漏极214及所述电源走线215处进行开孔，之后沉积底部像素电极材料，使得所述第一底电极221还与所述漏极213接触，所述第二底电极222还与所述电源走线215接触。\n\n[0028]进一步的实施例中，在形成所述底电极层之后进一步包括：对所述像素定义层205进行侧面刻蚀，以使得所述底电极层在所述隔离凹槽2052处与所述像素定义层205形成第二底切(Undercut)结构，即在所述隔离凹槽2052处，所述底电极层的宽度(图示横向方向)大于所述像素定义层205的宽度，如图8所示。此第二底切结构用于后续在最上方沉积顶部电极时，使得形成的成膜不连续，从而有效保证所形成的像素间相互绝缘。\n\n[0029]进一步的实施例中，可以采用O2等离子体对所述像素定义层205进行侧面刻蚀，对其进行侧刻蚀，最终所述底电极层与所述像素定义层205形成倒角形貌(即所述第二底切结构)，此倒角用于后续在最上方沉积顶部电极时，使得形成的成膜不连续，从而有效保证所形成的像素间相互绝缘。\n\n[0030]关于步骤S14：在所述底电极层上对应于所述绑定孔处形成一粘合层，请一并参阅图1及图9。所述粘合层206起到对后续转移过来的Micro LED结构的粘合固定作用。所述粘合层206可以采用热固化有机材料制成，以在后续Micro LED结构被转移到TFT阵列基板上之后，通过进一步加热烘烤，使得粘合层进行重新流动，进而完成对Micro LED结构的牢固粘合。\n\n[0031]关于步骤S15：提供一转运基板，所述转运基板上包括至少一剥离层及至少一微发光二极管结构，请一并参阅图1及图10。具体的，所述微发光二极管结构23的顶部通过所述剥离层(Lift off layer)207与所述转运基板300固定连接，所述微发光二极管(MicroLED)结构23的底部用于与所述粘合层206粘合。所述微发光二极管结构23包括一第一侧电极231和一第二侧电极232，所述剥离层207在所述第二侧电极232处与所述微发光二极管结构23形成第一底切结构，即所述剥离层207自与所述第二侧电极232接触部分向外延伸一段距离，最终所述剥离层207与所述第二侧电极232形成倒角形貌，此第一底切结构用于后续在最上方沉积顶部电极时，使得形成的成膜不连续，从而有效电极间具有良好的绝缘性。所述剥离层207在Micro LED结构从转移基板移动到接收基板(即所述TFT阵列基板)过程中起到固定Micro LED结构的作用，并在Micro LED结构转移到接收基板后，通过剥离技术(例如激光400照射)，连同Micro LED结构一起从转移基板上脱落至接收基板上。\n\n[0032]关于步骤S16：将所述微发光二极管结构与所述粘合层粘合，并剥离所述转运基板，请一并参阅图1及图11。在本实施例中，通过激光(Laser)辅助巨量转移方式，Micro LED结构被移动到所述TFT阵列基板上方，通过激光400照射，所述剥离层207连同Micro LED结构一起从转移基板300上脱落至所述TFT阵列基板上，从而使得Micro LED结构被转移到所述TFT阵列基板上。转移到所述TFT阵列基板的Micro LED结构，其顶部带有所述剥离层207，在所述第二侧电极232处所述剥离层207与所述Micro LED结构形成倒角，在后续的沉积顶部电极时，可以使得形成的成膜不连续，起到电极断层绝缘作用。在其它实施例中，也可以通过其它的巨量转移方式，将Micro LED结构转移到TFT阵列基板上。\n\n[0033]进一步的实施例中，对采用热固化有机材料的所述粘合层206进行进一步烘烤，所述粘合层206进行重新流动，进而使得所述Micro LED结构嵌入所述粘合层206中，完成对Micro LED结构的牢固粘合，如图12所示。\n\n[0034]关于步骤S17：在所述剥离层上形成一顶电极层，所述顶电极层包括一顶电极、一第一自对准导线及一第二自对准导线，且所述顶电极与所述第二自对准导线绝缘，请一并参阅图1及图13。在本实施例中，采用开放式掩膜板(Open Mask)在所述剥离层207上沉积顶部电极材料，即可直接形成包括所述顶电极240、一第一自对准(Self alignment)导线241及一第二自对准导线242的所述顶电极层，且所述顶电极240与所述第二自对准导线242在所述第一底切结构处断开，从而相互绝缘。同时，所述顶电极240通过所述第一自对准导线241与所述第一侧电极231及所述第一底电极221连接绑定，所述第二侧电极232通过所述第二自对准导线242与所述第二底电极222连接绑定并与所述顶电极240绝缘。所述顶部电极材料可以为ITO、IZO、AZO等透明导电材料或金属材料。\n\n[0035]本申请提出一种微发光二极管显示基板的制备方法，由于Micro LED结构与TFT阵列基板上均带有底切结构，仅采用开放式掩膜板沉积电极材料，即可获得顶电极及连接Micro LED结构与接收基板间电极的自对准导线，操作相对简单，且电极间具有良好的绝缘性，不需要精确的金属掩膜板(Fine Metal Mask)沉膜技术，有效节省了生产成本。采用本申请所述的制备方法，可以一次性完成所有Micro LED结构与接收基板间对应电极间的连接，且可以避免每颗MicroLED结构与接收基板连接出现差异性，提高器件制作良率。同时，由于该底切结构，有效保证所形成的像素间相互绝缘。\n\n[0036]进一步的实施例中，形成一封装层208，以对所述微发光二极管显示基板进行封装保护，如图14所示。可以通过在所述微发光二极管显示基板上沉积有机材料/无机材料形成所述封装层208。\n\n[0037]基于同一发明构思，本申请还提供了一种微发光二极管结构的制备方法。请参阅图15A-图15E，本申请微发光二极管结构的制备方法一实施例的制备流程图。具体的，所述微发光二极管结构可以采用以下制作流程制备而成：\n\n[0038]1)在一第二衬底301上外延沉积微发光二极管芯片的外延层302，如图15A所示。根据LED发光波长，所述外延层302可以选择为InGaAlP，InGaN等。\n\n[0039]2)对所述外延层302进行图案化处理，形成至少一微发光二极管芯片303及对应的连接板304，所述连接板304形成于所述微发光二极管芯片303底部，并自所述微发光二极管芯片303底部向两侧分别延伸形成一第一连接端3041及一第二连接端3042，如图15B所示。即，通过对所述外延层302进行图案化处理，使得Micro LED芯片底部形成两个延伸出来的台阶(即第一连接端3041和第二连接端3042)。\n\n[0040]3)在所述微发光二极管芯片303及所述第二连接端3042上形成一绝缘保护层305并进行开孔，形成一电极接触孔3051，如图15C所示。所述绝缘保护层305可以通过沉积钝化材料形成，所述绝缘保护层305的材料可以为SiNx，SiOx等。\n\n[0041]4)在所述绝缘保护层305上沉积导电材料，形成一第一侧电极231及一第二侧电极232，其中，所述第一侧电极231与所述第一连接端3041接触，所述第二侧电极232通过所述电极接触孔3051与所述微发光二极管芯片303接触，如图15D所示。即，通过沉积电极导电材料及图案化，使得Micro LED的顶部电极及底部电极分别连接到两侧的电极上。\n\n[0042]剥离所述第二衬底301之后，获取至少一微发光二极管结构23，所述微发光二极管结构23具有侧电极。\n\n[0043]进一步的实施例中，通过激光剥离技术(Laser lift-off，LLO)等方法将所述微发光二极管结构23从所述第二衬底301上剥离开，所述微发光二极管结构23被转移至转移基板300上，转移基板300上带有用于激光转移的剥离层(Lift off layer)207，如图15E所示。所述剥离层207在所述微发光二极管结构23从转移基板300移动到接收基板(即所述TFT阵列基板)过程中起到固定所述微发光二极管结构23的作用，并在所述微发光二极管结构23转移到接收基板后，通过剥离技术(例如激光照射)，连同所述微发光二极管结构23一起从转移基板300上脱落至接收基板上。\n\n[0044]相比普通的Micro LED，本申请所述微发光二极管结构的制备方法制成的微发光二极管结构，两侧具有侧电极，顶部带有底切结构(顶部比其下的结构宽)，从而可以通过Open Mask沉积导电材料形成顶电极及自对准导线，通过自对准导线使得电极间具有良好的绝缘性，提高器件制作良率。\n\n[0045]基于同一发明构思，本申请还提供了一种微发光二极管显示基板。请参阅图13，所述微发光二极管显示基板，包括：一衬底基板、一像素定义层205、一底电极层、一粘合层206、一微发光二极管结构23、一剥离层207以及一顶电极层。\n\n[0046]具体的，所述衬底基板包括：一TFT层，所述TFT层包括：一有源层211，设置于一第一衬底201上；一栅极绝缘层202，设置于所述有源层211上；一栅极212，设置于所述栅极绝缘层202上，并对应所述有源层211；一层间绝缘层203，覆盖所述栅极212及所述栅极绝缘层202；以及一源漏极层，设置于所述层间绝缘层203上，所述源漏极层包括一源极213、一漏极214及一电源走线215，所述源极213和所述漏极214分别与所述有源层211的两端接触。所述衬底基板还包括：一钝化层205，所述钝化层205覆盖所述源极213、漏极214、电源走线215及所述层间绝缘层203。\n\n[0047]所述像素定义层205设置于所述衬底基板上，所述像素定义层205具有一绑定孔2051及位于所述绑定孔2051两侧的隔离凹槽2052。所述绑定孔2051用于定义Micro LED结构的绑定位置。所述隔离凹槽2052可以在顶部电极沉积时用于定义绝缘隔离线，所述隔离凹槽2052的凹槽底部可以位于所述像素定义层205内，也可以位于所述钝化层205上。\n\n[0048]所述底电极层设置于所述像素定义层205上，所述底电极层包括相互绝缘的一第一底电极221及一第二底电极222。所述第一底电极221还与所述漏极214接触，所述第二底电极222还与所述电源走线215接触。所述底电极层在所述隔离凹槽2052处与所述像素定义层205形成第二底切(Undercut)结构，使得后续形成的自对准导线分别在相应的隔离凹槽2052处断开。\n\n[0049]所述粘合层206，设置于所述底电极层上且对应于所述绑定孔2051。\n\n[0050]所述微发光二极管结构23嵌入所述粘合层206中，所述微发光二极管结构23包括一第一侧电极231和一第二侧电极232。\n\n[0051]所述剥离层207设置于所述微发光二极管结构23上，并在所述第二侧电极232处与所述微发光二极管结构23形成第一底切结构，使得后续的顶电极与第二自对准导线绝缘，进而使得电极间具有良好的绝缘性。\n\n[0052]所述顶电极层设置于所述剥离层207上，所述顶电极层包括一顶电极240、一第一自对准导线241及一第二自对准导线242，且所述顶电极240与所述第二自对准导线242绝缘；其中，所述顶电极240通过所述第一自对准导线241与所述第一侧电极231及所述第一底电极221连接绑定，所述第二侧电极232通过所述第二自对准导线242与所述第二底电极222连接绑定并与所述顶电极240绝缘，即电极间具有良好的绝缘性。\n\n[0053]本申请微发光二极管显示基板，Micro LED结构与接收基板通过有机粘合剂固定，Micro LED结构两侧设有电极，其上带有底切结构，接收基板上也带有底切结构，因此，连接Micro LED结构与接收基板间电极的导线可以实现自对准，可以避免每颗Micro LED结构与接收基板连接出现差异性，且电极间具有良好的绝缘性，有效保证所形成的像素间相互绝缘，提高器件制作良率。\n\n[0054]以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种微发光二极管显示基板及其制备方法。\n\n背景技术\n\n[0002]发光二极管(Light Emitting Diode，简称LED)是一种能够将电能转换成特定波长范围的光的半导体元件。发光二极管的发光原理是电子在N型半导体与P型半导体间移动的能量差以光的形式释放。发光二极管具有低功耗、尺寸小、亮度高、易与集成电路匹配及可靠性高等优点，目前常作为光源被广泛应用。随着LED技术的成熟，直接使用LED作为点像素的LED显示器或微发光二极管(Micro LED)显示器逐渐发展起来。\n\n[0003]Micro LED显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的自发光显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级。其中，在Micro LED显示器的制作过程，先在供给基板(如蓝宝石类基板)上通过分子束外延的方法生长出多个微小化、薄膜化以及阵列化的Micro LED颗粒，再将这些MicroLED颗粒从供给基板转移到用于形成显示面板的接收基板上排成显示阵列。\n\n[0004]然而，转移Micro LED颗粒涉及巨量且微小的发光二级管精确转移，精确绑定等问题。目前已知的Micro LED与TFT阵列基板(即接收基板)间的电极连接绑定(Bonding)方案中，大多数方法为Micro LED转移到TFT阵列基板，与基板上预图案化的绑定材料进行电极粘合绑定。所述电极粘合绑定较多采用AuSn、InSn等类似的低熔点金属进行粘合绑定，涉及绑定材料固相-液相-固相转化，邦定过程复杂，可靠性低，容易造成绑定不良，导致修复成本增加。\n\n[0005]因此，如何简化转移Micro LED颗粒时的邦定操作，提高邦定可靠性，提高器件制作良率，成为现有Micro LED显示技术发展亟需改进的技术问题。\n\n发明内容\n\n[0006]本申请的目的在于，针对现有技术存在的问题，提供一种微发光二极管显示基板及其制备方法，可以简化转移Micro LED颗粒时的邦定操作，避免Micro LED与TFT阵列基板连接出现差异性，提高邦定可靠性，提高器件制作良率。\n\n[0007]为实现上述目的，本申请提供了一种微发光二极管显示基板的制备方法，包括如下步骤：提供一衬底基板；在所述衬底基板上形成一像素定义层并进行图案化，形成一绑定孔；在像素定义层上形成一底电极层，所述底电极层包括相互绝缘的一第一底电极及一第二底电极；在所述底电极层上对应于所述绑定孔处形成一粘合层；提供一转运基板，所述转运基板上包括至少一剥离层及至少一微发光二极管结构，所述微发光二极管结构通过所述剥离层与所述转运基板固定连接，所述微发光二极管结构包括一第一侧电极和一第二侧电极，所述剥离层在所述第二侧电极处与所述微发光二极管结构形成第一底切结构；将所述微发光二极管结构与所述粘合层粘合，并剥离所述转运基板；在所述剥离层上形成一顶电极层，所述顶电极层包括一顶电极、一第一自对准导线及一第二自对准导线，且所述顶电极与所述第二自对准导线绝缘；其中，所述顶电极通过所述第一自对准导线与所述第一侧电极及所述第一底电极连接绑定，所述第二侧电极通过所述第二自对准导线与所述第二底电极连接绑定。\n\n[0008]为实现上述目的，本申请还提供了一种微发光二极管显示基板，所述微发光二极管显示基板包括：一衬底基板；一像素定义层，设置于所述衬底基板上，所述像素定义层具有一绑定孔；一底电极层，设置于所述像素定义层上，所述底电极层包括相互绝缘的一第一底电极及一第二底电极；一粘合层，设置于所述底电极层上且对应于所述绑定孔；一微发光二极管结构，嵌入所述粘合层中，所述微发光二极管结构包括一第一侧电极和一第二侧电极；一剥离层，设置于所述微发光二极管结构上，并在所述第二侧电极处与所述微发光二极管结构形成第一底切结构；以及一顶电极层，设置于所述剥离层上，所述顶电极层包括一顶电极、一第一自对准导线及一第二自对准导线，且所述顶电极与所述第二自对准导线绝缘；其中，所述顶电极通过所述第一自对准导线与所述第一侧电极及所述第一底电极连接绑定，所述第二侧电极通过所述第二自对准导线与所述第二底电极连接绑定。\n\n[0009]本申请的优点在于：本申请Micro LED结构与接收基板通过有机粘合剂固定，Micro LED结构两侧设有电极，其上带有底切结构；接收基板上也带有底切结构，仅采用开放式掩膜板沉积电极材料，即可获得顶电极及连接Micro LED结构与接收基板间电极的自对准导线，操作相对简单，且电极间具有良好的绝缘性，不需要精确的金属掩膜板沉膜技术，有效节省了生产成本。采用本申请所述的制备方法，可以一次性完成所有Micro LED结构与接收基板间对应电极间的连接，且可以避免每颗Micro LED结构与接收基板连接出现差异性，提高器件制作良率。同时，由于该底切结构，有效保证所形成的像素间相互绝缘。\n\n附图说明\n\n[0010]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。\n\n[0011]图1为本申请微发光二极管显示基板的制备方法的流程图；\n\n[0012]图2-图14为本申请微发光二极管显示基板的制备方法一实施例的制备流程图；\n\n[0013]图15A-图15E为本申请微发光二极管结构的制备方法一实施例的制备流程图。\n\n具体实施方式\n\n[0014]下面详细描述本申请的实施方式，所述实施方式的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的组件或具有相同或类似功能的组件。本申请的说明书和权利要求书以及附图中的术语“第一”“第二”“第三”等(如果存在)是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。应当理解，这样描述的对象在适当情况下可以互换。此外，术语“包括”和“具有”以及它们的任何变形，意图在于覆盖不排它的包含。本申请所提到的方向用语，例如：上、下、左、右、前、后、内、外、侧面等，仅是参考附图的方向。\n\n[0015]以下通过参考附图描述的实施方式及使用的方向用语是示例性的，仅用于解释本申请，而不能理解为对本申请的限制。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其它工艺的应用和/或其它材料的使用。\n\n[0016]本申请提出一种微发光二极管显示基板设计，Micro LED结构与接收基板通过有机粘合剂固定，Micro LED结构两侧设有电极，其上带有底切结构；接收基板上也带有底切结构，仅采用开放式掩膜板(Open Mask)沉积电极材料，即可获得顶电极及连接Micro LED结构与接收基板间电极的自对准导线，操作相对简单，且电极间具有良好的绝缘性，不需要精确的金属掩膜板(Fine Metal Mask)沉膜技术，有效节省了生产成本。采用本申请所述的制备方法，可以一次性完成所有Micro LED结构与接收基板间对应电极间的连接，且可以避免每颗Micro LED结构与接收基板连接出现差异性，提高器件制作良率。同时，由于该底切结构，有效保证所形成的像素间相互绝缘。\n\n[0017]请一并参阅图1、图2-图14，其中，图1为本申请微发光二极管显示基板的制备方法的流程图，图2-图14为本申请微发光二极管显示基板的制备方法一实施例的制备流程图。\n\n[0018]所述制备方法包括如下步骤：S11：提供一衬底基板；S12：在所述衬底基板上形成一像素定义层并进行图案化，形成一绑定孔；S13：在像素定义层上形成一底电极层，所述底电极层包括相互绝缘的一第一底电极及一第二底电极；S14：在所述底电极层上对应于所述绑定孔处形成一粘合层；S15：提供一转运基板，所述转运基板上包括至少一剥离层及至少一微发光二极管结构，所述微发光二极管结构的第一表面通过所述剥离层与所述转运基板固定连接，所述微发光二极管结构包括一第一侧电极和一第二侧电极，所述剥离层在所述第二侧电极处与所述微发光二极管结构形成第一底切结构；S16：将所述微发光二极管结构的第二表面与所述粘合层粘合，并剥离所述转运基板；以及S17：在所述剥离层上形成一顶电极层，所述顶电极层包括一顶电极、一第一自对准导线及一第二自对准导线，且所述顶电极与所述第二自对准导线绝缘。其中，所述顶电极通过所述第一自对准导线与所述第一侧电极及所述第一底电极连接绑定，所述第二侧电极通过所述第二自对准导线与所述第二底电极连接绑定。\n\n[0019]关于步骤S11：提供一衬底基板，请一并参阅图1及图2-图5。在本实施例中，所述衬底基板包括一TFT层，即所述衬底基板为一TFT阵列基板。具体的，所述TFT层采用以下流程制备：\n\n[0020]1)在一第一衬底201上形成TFT的有源层211，如图2所示。在一实施例中，可以在一具有缓冲层(Buffer)的玻璃衬底(Glass)上沉积氧化物半导体膜层，并图案化，形成氧化物有源层。所述氧化物半导体膜层采用的材料可以为：IGZO、IZO、IGO、IGTO、IGZTO等。\n\n[0021]2)在所述第一衬底201上依次形成栅极绝缘层(GI)202及所述TFT的栅极(GE)212，如图3所示。在一实施例中，可以在所述第一衬底201上沉积栅极绝缘材料并图案化，形成所述栅极绝缘层202；所述栅极绝缘层202可以为SiOx层、SiNx层、AlOx层，或SiNx/SiOx叠层等。在一实施例中，可以在所述栅极绝缘层202上沉积栅极金属电极材料并图案化，形成所述栅极212。所述栅极可以为Cu/Mo叠层、Cu/MoTi叠层、Cu/Ti叠层，Al/Mo叠层，CuNb合金等。\n\n[0022]3)在所述第一衬底201上形成中间电介质层(ILD)203，并进行开孔，形成源漏极接触孔2031，所述中间电介质层203覆盖所述栅极212及所述栅极绝缘层202，如图4所示。在一实施例中，可以在所述第一衬底201上沉积中间电介质材料形成所述中间电介质层203，并在所述中间电介质层203上对应所述有源层211两端处开孔，形成所述源漏极接触孔2031。所述中间电介质层203可为SiOx层，SiNx叠层，或SiOx/SiNx叠层等。\n\n[0023]4)在所述中间电介质层203上依次形成源漏极层(S/D)及钝化层(PV)205，所述源漏极层包括所述TFT的源极(S)213和漏极(D)214，及电源走线(VSS)215，所述源极213和漏极214分别与所述有源层211两端的源/漏极接触区接触，如图5所示。在一实施例中，可以在所述中间电介质层203上沉积源/漏极金属电极材料并图案化，形成所述源极213、漏极214、电源走线215；所述源漏极层可以为Cu/Mo叠层、Cu/MoTi叠层、Cu/Ti叠层，Al/Mo叠层，CuNb合金等。所述钝化层205可为SiNx层、SiOx层、或SiOx/SiOx叠层等。\n\n[0024]关于步骤S12：在所述衬底基板上形成一像素定义层并进行图案化，形成一绑定孔，请一并参阅图1及图6。所述像素定义层205的材料可以为有机材料。所述绑定孔2051用于定义Micro LED结构的绑定位置。\n\n[0025]进一步的实施例中，对所述像素定义层205进行图案化，形成所述绑定孔2051的同时，在所述像素定义层205上对应于所述绑定孔2051两侧分别形成隔离凹槽2052。所述隔离凹槽2052可以在后续的顶部电极沉积时用于定义绝缘隔离线，所述隔离凹槽2052的凹槽底部可以位于所述像素定义层205内，也可以位于所述钝化层205上。\n\n[0026]关于步骤S13：在像素定义层上形成一底电极层，所述底电极层包括相互绝缘的一第一底电极及一第二底电极，请一并参阅图1及图7。可以采用掩膜板在所述像素定义层205上沉积底部像素电极(PE_bottom)材料，形成相互绝缘的所述第一底电极221及所述第二底电极222。\n\n[0027]进一步的实施例中，可以在所述钝化层205上对应所述漏极214及所述电源走线215处进行开孔，之后沉积底部像素电极材料，使得所述第一底电极221还与所述漏极213接触，所述第二底电极222还与所述电源走线215接触。\n\n[0028]进一步的实施例中，在形成所述底电极层之后进一步包括：对所述像素定义层205进行侧面刻蚀，以使得所述底电极层在所述隔离凹槽2052处与所述像素定义层205形成第二底切(Undercut)结构，即在所述隔离凹槽2052处，所述底电极层的宽度(图示横向方向)大于所述像素定义层205的宽度，如图8所示。此第二底切结构用于后续在最上方沉积顶部电极时，使得形成的成膜不连续，从而有效保证所形成的像素间相互绝缘。\n\n[0029]进一步的实施例中，可以采用O2等离子体对所述像素定义层205进行侧面刻蚀，对其进行侧刻蚀，最终所述底电极层与所述像素定义层205形成倒角形貌(即所述第二底切结构)，此倒角用于后续在最上方沉积顶部电极时，使得形成的成膜不连续，从而有效保证所形成的像素间相互绝缘。\n\n[0030]关于步骤S14：在所述底电极层上对应于所述绑定孔处形成一粘合层，请一并参阅图1及图9。所述粘合层206起到对后续转移过来的Micro LED结构的粘合固定作用。所述粘合层206可以采用热固化有机材料制成，以在后续Micro LED结构被转移到TFT阵列基板上之后，通过进一步加热烘烤，使得粘合层进行重新流动，进而完成对Micro LED结构的牢固粘合。\n\n[0031]关于步骤S15：提供一转运基板，所述转运基板上包括至少一剥离层及至少一微发光二极管结构，请一并参阅图1及图10。具体的，所述微发光二极管结构23的顶部通过所述剥离层(Lift off layer)207与所述转运基板300固定连接，所述微发光二极管(MicroLED)结构23的底部用于与所述粘合层206粘合。所述微发光二极管结构23包括一第一侧电极231和一第二侧电极232，所述剥离层207在所述第二侧电极232处与所述微发光二极管结构23形成第一底切结构，即所述剥离层207自与所述第二侧电极232接触部分向外延伸一段距离，最终所述剥离层207与所述第二侧电极232形成倒角形貌，此第一底切结构用于后续在最上方沉积顶部电极时，使得形成的成膜不连续，从而有效电极间具有良好的绝缘性。所述剥离层207在Micro LED结构从转移基板移动到接收基板(即所述TFT阵列基板)过程中起到固定Micro LED结构的作用，并在Micro LED结构转移到接收基板后，通过剥离技术(例如激光400照射)，连同Micro LED结构一起从转移基板上脱落至接收基板上。\n\n[0032]关于步骤S16：将所述微发光二极管结构与所述粘合层粘合，并剥离所述转运基板，请一并参阅图1及图11。在本实施例中，通过激光(Laser)辅助巨量转移方式，Micro LED结构被移动到所述TFT阵列基板上方，通过激光400照射，所述剥离层207连同Micro LED结构一起从转移基板300上脱落至所述TFT阵列基板上，从而使得Micro LED结构被转移到所述TFT阵列基板上。转移到所述TFT阵列基板的Micro LED结构，其顶部带有所述剥离层207，在所述第二侧电极232处所述剥离层207与所述Micro LED结构形成倒角，在后续的沉积顶部电极时，可以使得形成的成膜不连续，起到电极断层绝缘作用。在其它实施例中，也可以通过其它的巨量转移方式，将Micro LED结构转移到TFT阵列基板上。\n\n[0033]进一步的实施例中，对采用热固化有机材料的所述粘合层206进行进一步烘烤，所述粘合层206进行重新流动，进而使得所述Micro LED结构嵌入所述粘合层206中，完成对Micro LED结构的牢固粘合，如图12所示。\n\n[0034]关于步骤S17：在所述剥离层上形成一顶电极层，所述顶电极层包括一顶电极、一第一自对准导线及一第二自对准导线，且所述顶电极与所述第二自对准导线绝缘，请一并参阅图1及图13。在本实施例中，采用开放式掩膜板(Open Mask)在所述剥离层207上沉积顶部电极材料，即可直接形成包括所述顶电极240、一第一自对准(Self alignment)导线241及一第二自对准导线242的所述顶电极层，且所述顶电极240与所述第二自对准导线242在所述第一底切结构处断开，从而相互绝缘。同时，所述顶电极240通过所述第一自对准导线241与所述第一侧电极231及所述第一底电极221连接绑定，所述第二侧电极232通过所述第二自对准导线242与所述第二底电极222连接绑定并与所述顶电极240绝缘。所述顶部电极材料可以为ITO、IZO、AZO等透明导电材料或金属材料。\n\n[0035]本申请提出一种微发光二极管显示基板的制备方法，由于Micro LED结构与TFT阵列基板上均带有底切结构，仅采用开放式掩膜板沉积电极材料，即可获得顶电极及连接Micro LED结构与接收基板间电极的自对准导线，操作相对简单，且电极间具有良好的绝缘性，不需要精确的金属掩膜板(Fine Metal Mask)沉膜技术，有效节省了生产成本。采用本申请所述的制备方法，可以一次性完成所有Micro LED结构与接收基板间对应电极间的连接，且可以避免每颗MicroLED结构与接收基板连接出现差异性，提高器件制作良率。同时，由于该底切结构，有效保证所形成的像素间相互绝缘。\n\n[0036]进一步的实施例中，形成一封装层208，以对所述微发光二极管显示基板进行封装保护，如图14所示。可以通过在所述微发光二极管显示基板上沉积有机材料/无机材料形成所述封装层208。\n\n[0037]基于同一发明构思，本申请还提供了一种微发光二极管结构的制备方法。请参阅图15A-图15E，本申请微发光二极管结构的制备方法一实施例的制备流程图。具体的，所述微发光二极管结构可以采用以下制作流程制备而成：\n\n[0038]1)在一第二衬底301上外延沉积微发光二极管芯片的外延层302，如图15A所示。根据LED发光波长，所述外延层302可以选择为InGaAlP，InGaN等。\n\n[0039]2)对所述外延层302进行图案化处理，形成至少一微发光二极管芯片303及对应的连接板304，所述连接板304形成于所述微发光二极管芯片303底部，并自所述微发光二极管芯片303底部向两侧分别延伸形成一第一连接端3041及一第二连接端3042，如图15B所示。即，通过对所述外延层302进行图案化处理，使得Micro LED芯片底部形成两个延伸出来的台阶(即第一连接端3041和第二连接端3042)。\n\n[0040]3)在所述微发光二极管芯片303及所述第二连接端3042上形成一绝缘保护层305并进行开孔，形成一电极接触孔3051，如图15C所示。所述绝缘保护层305可以通过沉积钝化材料形成，所述绝缘保护层305的材料可以为SiNx，SiOx等。\n\n[0041]4)在所述绝缘保护层305上沉积导电材料，形成一第一侧电极231及一第二侧电极232，其中，所述第一侧电极231与所述第一连接端3041接触，所述第二侧电极232通过所述电极接触孔3051与所述微发光二极管芯片303接触，如图15D所示。即，通过沉积电极导电材料及图案化，使得Micro LED的顶部电极及底部电极分别连接到两侧的电极上。\n\n[0042]剥离所述第二衬底301之后，获取至少一微发光二极管结构23，所述微发光二极管结构23具有侧电极。\n\n[0043]进一步的实施例中，通过激光剥离技术(Laser lift-off，LLO)等方法将所述微发光二极管结构23从所述第二衬底301上剥离开，所述微发光二极管结构23被转移至转移基板300上，转移基板300上带有用于激光转移的剥离层(Lift off layer)207，如图15E所示。所述剥离层207在所述微发光二极管结构23从转移基板300移动到接收基板(即所述TFT阵列基板)过程中起到固定所述微发光二极管结构23的作用，并在所述微发光二极管结构23转移到接收基板后，通过剥离技术(例如激光照射)，连同所述微发光二极管结构23一起从转移基板300上脱落至接收基板上。\n\n[0044]相比普通的Micro LED，本申请所述微发光二极管结构的制备方法制成的微发光二极管结构，两侧具有侧电极，顶部带有底切结构(顶部比其下的结构宽)，从而可以通过Open Mask沉积导电材料形成顶电极及自对准导线，通过自对准导线使得电极间具有良好的绝缘性，提高器件制作良率。\n\n[0045]基于同一发明构思，本申请还提供了一种微发光二极管显示基板。请参阅图13，所述微发光二极管显示基板，包括：一衬底基板、一像素定义层205、一底电极层、一粘合层206、一微发光二极管结构23、一剥离层207以及一顶电极层。\n\n[0046]具体的，所述衬底基板包括：一TFT层，所述TFT层包括：一有源层211，设置于一第一衬底201上；一栅极绝缘层202，设置于所述有源层211上；一栅极212，设置于所述栅极绝缘层202上，并对应所述有源层211；一层间绝缘层203，覆盖所述栅极212及所述栅极绝缘层202；以及一源漏极层，设置于所述层间绝缘层203上，所述源漏极层包括一源极213、一漏极214及一电源走线215，所述源极213和所述漏极214分别与所述有源层211的两端接触。所述衬底基板还包括：一钝化层205，所述钝化层205覆盖所述源极213、漏极214、电源走线215及所述层间绝缘层203。\n\n[0047]所述像素定义层205设置于所述衬底基板上，所述像素定义层205具有一绑定孔2051及位于所述绑定孔2051两侧的隔离凹槽2052。所述绑定孔2051用于定义Micro LED结构的绑定位置。所述隔离凹槽2052可以在顶部电极沉积时用于定义绝缘隔离线，所述隔离凹槽2052的凹槽底部可以位于所述像素定义层205内，也可以位于所述钝化层205上。\n\n[0048]所述底电极层设置于所述像素定义层205上，所述底电极层包括相互绝缘的一第一底电极221及一第二底电极222。所述第一底电极221还与所述漏极214接触，所述第二底电极222还与所述电源走线215接触。所述底电极层在所述隔离凹槽2052处与所述像素定义层205形成第二底切(Undercut)结构，使得后续形成的自对准导线分别在相应的隔离凹槽2052处断开。\n\n[0049]所述粘合层206，设置于所述底电极层上且对应于所述绑定孔2051。\n\n[0050]所述微发光二极管结构23嵌入所述粘合层206中，所述微发光二极管结构23包括一第一侧电极231和一第二侧电极232。\n\n[0051]所述剥离层207设置于所述微发光二极管结构23上，并在所述第二侧电极232处与所述微发光二极管结构23形成第一底切结构，使得后续的顶电极与第二自对准导线绝缘，进而使得电极间具有良好的绝缘性。\n\n[0052]所述顶电极层设置于所述剥离层207上，所述顶电极层包括一顶电极240、一第一自对准导线241及一第二自对准导线242，且所述顶电极240与所述第二自对准导线242绝缘；其中，所述顶电极240通过所述第一自对准导线241与所述第一侧电极231及所述第一底电极221连接绑定，所述第二侧电极232通过所述第二自对准导线242与所述第二底电极222连接绑定并与所述顶电极240绝缘，即电极间具有良好的绝缘性。\n\n[0053]本申请微发光二极管显示基板，Micro LED结构与接收基板通过有机粘合剂固定，Micro LED结构两侧设有电极，其上带有底切结构，接收基板上也带有底切结构，因此，连接Micro LED结构与接收基板间电极的导线可以实现自对准，可以避免每颗Micro LED结构与接收基板连接出现差异性，且电极间具有良好的绝缘性，有效保证所形成的像素间相互绝缘，提高器件制作良率。\n\n[0054]以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10745, 23799, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及显示器件的制造领域，具体涉及显示面板以及显示装置。\n\n背景技术\n\n[0002]Micro LED(Micro Light Emitting Diode，微型发光二极管)技术，即在一个芯片上集成的高密度微小尺寸的LED阵列的技术，利用该技术制备的Micro LED显示屏具备高亮度、高色域、高解析度、省电、反应速度快等优点。\n\n[0003]然而，现有的显示面板中没有对Micro LED器件中发射的光进行反射处理，导致其中大量不可被反射的高能量、穿透性强的光线射入人眼，对人眼造成伤害，导致采用MicroLED技术制备的Micro LED显示屏的安全性较低。\n\n[0004]综上所述，有必要提供一种显示面板以及显示装置，以解决Micro LED显示屏中因Micro LED器件发射的高能量、穿透性强的光线造成的伤害人眼的问题。\n\n发明内容\n\n[0005]本发明目的在于提供显示面板以及显示装置，其中发光层包括多个发光部，通过在发光层发射第一光线的一侧设置反光层，第一光线在反光层上反射形成反射光，反射光穿过间隙形成出射光，解决了现有技术中因Micro LED器件发出的光线中包含了高能量、穿透性强的光线，从而对人眼造成伤害的问题。\n\n[0006]本发明实施例提供一种显示面板，所述显示面板包括发光层和反光层，所述发光层和所述反光层相对设置；\n\n[0007]所述发光层包括多个发光部，相邻的两所述发光部之间具有间隙，所述发光部向所述反光层发射第一光线；\n\n[0008]所述反光层用于反射所述第一光线以形成反射光，所述反射光穿过所述间隙形成出射光。\n\n[0009]在一实施例中，所述发光层还包括多个用于过滤不同颜色的光的滤光部，所述滤光部设于所述间隙中，所述反射光穿过所述滤光部形成对应颜色的所述出射光。\n\n[0010]在一实施例中，所述反光层包括多个反光部，所述反光部与所述间隙相对设置。\n\n[0011]在一实施例中，位于同一所述发光部两侧的两所述滤光部的组成材料或者尺寸相异，使得对应的所述出射光的颜色相异。\n\n[0012]在一实施例中，多个所述滤光部至少包括由色阻材料、光阻材料或者光致发光材料中任意两种不同材料分别组成的两种滤光部。\n\n[0013]在一实施例中，所述发光部为无机发光二极管，所述发光部为Mini/Micro LED，其中，当所述Mini/Micro LED为蓝光Mini/Micro LED时，位于同一所述发光部两侧的两所述滤光部为所述色阻材料、所述光阻材料或者所述光致发光材料组成的红色滤光层和绿色滤光层，所述反射光穿过所述红色滤光层、所述绿色滤光层分别形成红光、绿光。\n\n[0014]在一实施例中，所述发光部包括辅助部，所述辅助部围绕所述发光部远离所述反光层的一侧、以及所述发光部靠近所述间隙的两侧而设置，所述辅助部用于透出或者遮挡所述发光部发出的光线。\n\n[0015]在一实施例中，当所述发光部发出的光线为蓝光时，所述辅助部的组成材料为透光材料，用以透过所述发光部发出的蓝光；当所述发光部发出的光线为白光时，所述辅助部的组成材料为遮光材料，用以遮挡所述发光部发出的白光。\n\n[0016]在一实施例中，当所述发光部发出的光线为蓝光时，所述辅助部的组成材料为透光材料，用以透过所述发光部发出的蓝光，其中，透过所述发光部的蓝光和所述反射光穿过位于同一所述发光部两侧的两所述滤光部分别形成的红光、绿光共同形成显示画面。\n\n[0017]本发明实施例还提供一种显示装置，所述显示装置包括任一如上所述的显示面板。\n\n[0018]本发明提供了显示面板以及显示装置，所述显示面板以及所述显示装置包括发光层和反光层，所述发光层和所述反光层相对设置；所述发光层包括多个发光部，相邻的两所述发光部之间具有间隙，所述发光部向所述反光层发射第一光线，所述第一光线在所述反光层上反射形成反射光，所述反射光穿过所述间隙形成出射光。本发明通过在所述发光层发射所述第一光线的一侧设置所述反光层，以反射所述第一光线、形成所述出射光；降低了Micro LED器件发出的光对人眼造成的伤害，从而提高了Micro LED显示屏的安全性。\n\n附图说明\n\n[0019]下面通过附图来对本发明进行进一步说明。需要说明的是，下面描述中的附图仅仅是用于解释说明本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0020]图1为本发明实施例提供的第一种显示面板的剖面图。\n\n[0021]图2为本发明实施例提供的一种发光部的剖面图。\n\n[0022]图3为本发明实施例提供的第二种显示面板的剖面图。\n\n[0023]图4为本发明实施例提供的一种薄膜晶体管层的俯视图。\n\n[0024]图5为本发明实施例提供的第三种显示面板的剖面图。\n\n[0025]图6为本发明实施例提供的第四种显示面板的剖面图。\n\n[0026]图7为本发明实施例提供的第五种显示面板的剖面图。\n\n[0027]图8为本发明实施例提供的第六种显示面板的剖面图。\n\n[0028]图9为本发明实施例提供的第七种显示面板的剖面图。\n\n具体实施方式\n\n[0029]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整的描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。本领域技术人员显式地和隐式地理解的是，本文所描述的实施例可以与其它实施例相结合。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0030]在本发明的描述中，需要理解的是，术语“上”、“下”、“远离”、“靠近”、“横向”、“纵向”等指示的方位或位置关系为基于附图所示的方位或位置关系，其中，“上”只是表面在物体上方，具体指代正上方、斜上方、上表面都可以，只要居于物体水平之上即可，“靠近”则是指相比较而言，与目标距离更小的一侧，以上方位或位置关系仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。\n\n[0031]另外，还需要说明的是，附图提供的仅仅是和本发明关系比较密切的结构和/或步骤，省略了一些与发明关系不大的细节，目的在于简化附图，使发明点一目了然，而不是表明实际中装置和/或方法就是和附图一模一样，不作为实际中装置和方法的限制。\n\n[0032]本发明提供显示装置，所述显示装置包括如图1-9所示的显示面板或者其中的相关膜层。\n\n[0033]在一实施例中，如图1所示，所述显示面板00包括发光层10和反光层20，所述发光层10和所述反光层20相对设置；所述发光层10包括多个发光部101，相邻的两所述发光部101之间具有间隙102，所述发光部101向所述反光层20发射第一光线01，所述反光层20用于反射所述第一光线01以形成反射光02，所述反射光02穿过所述间隙102形成出射光03。\n\n[0034]其中，所述反光层20的组成材料可以包括银、铝、玻璃中的至少一种，且所述反光层20的反光效率可以大于80％，其中对于某点而言，其反光效率表示：该点的出射光线的量、与该出射光线对应的入射光线的量的比值。具体的，所述反光层20可以为镀银反光层、镀铝反光层或者玻璃反光片。\n\n[0035]在一实施例中，所述发光部101为无机发光二极管，且所述发光部101的宽度可以不小于1微米，且不大于10微米；进一步的，相邻两所述发光部101之间的所述间隙102的宽度也为微米级的数量级。可以理解的，所述发光部101可以通过Micro LED技术制备。\n\n[0036]在一实施例中，如图2所示，所述发光部101可以包括第一半导体层1011、第二半导体层1012、以及设于所述第一半导体层1011和所述第二半导体层1012之间的无机层1013。其中，所述第一半导体层1011、所述第二半导体层1012的组成材料可以分别包括P型掺杂的无机发光材料、N型掺杂的无机发光材料，所述无机层1013的组成材料可以包括氮化镓。所述发光部101用于发射单色光。例如所述发光部101反射出的所述第一光线01可以为白光或者蓝光。\n\n[0037]例如，当所述发光部101反射出的所述第一光线01为蓝光时，所述无机层1013可以采用氮化镓材料制备；又例如，当所述发光部101反射出的所述第一光线01为白光时，可以在所述第一半导体层1011或者所述第二半导体层1012远离所述无机层1013的一侧涂布黄色荧光材料或者量子点材料，使得蓝光与所述黄色荧光材料或者量子点材料作用以后转变为白光。\n\n[0038]可以理解的，穿过每一所述间隙102的所述出射光03的亮度由所述间隙两侧的两个发光部101的发光强度共同决定的，故可以分别控制每一所述发光部101的发光强度，使得每一所述间隙102射出的出射光03的亮度符合要求。\n\n[0039]在一实施例中，如图3-4所示，在所述发光层10下方还可以设置薄膜晶体管层30，所述薄膜晶体管层30可以包括多条栅极线301、多条数据线302，所述多条栅极线301、多条数据线302分别沿横向平行设置、沿纵向平行设置，所述多条栅极线301、多条数据线302相交以限定多个区域，所述多个区域中每一个区域用于承载薄膜晶体管单元或者所述间隙102，进一步的，每一排和每一列中所述薄膜晶体管单元和所述间隙102均交替设置，所述薄膜晶体管单元与所述发光部101相对应，所述薄膜晶体管单元包括第一源极303、第二源极304、漏极305、以及栅极306。可以理解的，所述薄膜晶体管层30可以采用透光材料制备，以保证所述第一光线01照射至所述反光层20上。\n\n[0040]具体的，如图4所示，所述发光部101连接于对应的漏极305与对应的第二源极304之间，例如，所述第一半导体层1011、第二半导体层1012可以分别和所述漏极305、所述第二源极304连接，或者所述第一半导体层1011、第二半导体层1012可以分别和所述第二源极304、所述漏极305连接。需要注意的是，分别位于同一所述数据线302两侧的多个第二源极304与多个第一源极303之间电性连接，即上一级的所述第二源极304与下一级的所述第一源极303中电信号相同。\n\n[0041]可以理解的，位于同一排的多个栅极306电性连接于同一栅极线301，所述栅极线301控制本级的多个薄膜晶体管单元中每一个薄膜晶体管单元的第一源极303与漏极305的导通情况，本级的数据线302通过向本级的第一源极303传递电信号、以控制本级的漏极305的电流或者电压大小、从而控制本级的多个发光部101中每一个发光部101的第一半导体层1011或者第二半导体层1012的电流或者电压大小；下一级的数据线302通过向本级的多个薄膜晶体管单元中每一个薄膜晶体管单元的第二源极304传递电信号、以控制本级的多个发光部101中每一个发光部101的第二半导体层1012或者第一半导体层1011的电流或者电压大小；最终所述发光部101中第一半导体层1011和第二半导体层1012的电流或者电压大小决定所述发光部101的发光情况。\n\n[0042]在一实施例中，如图5所示，所述发光层10还包括多个用于过滤不同颜色的光的滤光部103，所述滤光部103设于所述间隙102中，所述反射光02穿过所述滤光部103形成对应颜色的所述出射光03。\n\n[0043]进一步的，位于同一所述发光部101两侧的两个滤光部103的组成材料或者尺寸相异，使得对应的出射光03的颜色相异。例如，同一排或者同一列中，连续设置的三个所述滤光部103的组成材料或者尺寸相异，可以使得对应的所述出射光03的颜色分别为红色、绿色和蓝色；又例如，同一排或者同一列中，连续设置的四个所述滤光部103的组成材料或者尺寸相异，可以使得对应的所述出射光03分别为红色、绿色、蓝色、黄色和白色中的任意四种颜色的光；又例如，阵列排列为呈矩形的四个所述滤光部103的组成材料或者尺寸相异，可以使得对应的所述出射光03分别为红色、绿色、蓝色、黄色和白色中的任意四种颜色的光。其中，所述三种或者四种颜色的顺序不作限制。可以理解的，当所述出射光03的颜色为白色时，可以提高所述显示面板00整体的亮度。\n\n[0044]其中，所述多个滤光部103至少包括由色阻材料、光阻材料和光致发光材料中任意两种不同材料分别组成的两种滤光部。具体的，所述多个滤光部103可以由所述色阻材料组成，比如由有机颜料组成，当照射到所述色阻材料上的光线的颜色对应的波长、与所述色阻材料本身呈现的颜色对应的波长相近时，所述色阻材料可以使得所述光线通过，并且过滤其它颜色的光线；例如，当所述反射光线02为白光，即所述发光部101为白光Micro/MiniLed时，多个所述滤光部103分别可以为红色色阻材料、绿色色阻材料、蓝色色阻材料对应组成的红色滤光层、绿色滤光层以及蓝色滤光层，白色的所述反射光线02通过所述红色滤光层、绿色滤光层以及蓝色滤光层形成对应的红光、绿光和蓝光，以形成显示画面，当然，所述多个滤光部103还可以分别为红色色阻材料、绿色色阻材料、蓝色色阻材料、黄色色阻材料对应组成的红色滤光层、绿色滤光层、蓝色滤光层、黄色滤光层，在此不做限制。\n\n[0045]进一步的，在此基础上，所述多个滤光部103还可以包括由所述光阻材料组成的透明滤光层，比如由有机透明光阻材料组成，任一颜色的光线可以穿透所述光阻材料后仍然呈现所述光线的原色彩；同理，当所述反射光线02为白光，白色的所述反射光线02通过所述红色滤光层、所述绿色滤光层、所述蓝色滤光层以及所述透明滤光层形成对应的红光、绿光、蓝光和白光，以形成显示画面。\n\n[0046]具体的，多个所述滤光部103可以由所述光致发光材料组成，比如可以由量子点荧光发光材料或者有机发光材料组成，其颜色组成与上述相同，在此不再赘述，可以理解的，当照射到所述光致发光材料上的光线的颜色对应的波长较短时，所述光致发光材料可以吸收蓝光并发出红光或者绿光。进一步地，所述发光部101可以为蓝光Micro/Mini Led，此时，多个所述滤光部103可以分别为由红色色阻材料、绿色色阻材料组成的滤光层，也可以分别为由红色量子点等光致发光材料、绿色量子点等光致发光材料组成的滤光层，进一步的，所述光致发光材料可以为硒化镉的量子点材料，例如为红光量子点材料、绿光量子点材料，分别可以在蓝光短波长的激发下发出高纯度的红光、绿光。\n\n[0047]在一实施例中，如图6所示，所述反光层20包括多个反光部201，所述反光部201与所述间隙102相对设置。进一步的，所述反光层20下方可以设置有基板40，所述基板40用于承载所述多个反光部201，进一步的，所述基板40可以采用玻璃或者塑料等反光率较低的材料制备，具体的，所述基板40的反光效率不高于10％，在此定义所述基板40上与所述发光部101对应的区域为非反光区域401。\n\n[0048]可以理解的，若多个所述反光部201仅与多个所述间隙102相对设置，则所述发光部101发出的第一光线01基本上在所述反光部201上发生反射形成反射光02，而所述非反光区域401基本上不会发生反射。进一步的，所述反光部201的宽度可以等于所述间隙102的宽度，这样，所述反光部201上的所述反射光02可以充分穿透所述间隙102形成所述出射光03。例如，当所述反光部201与所述间隙102在竖直方向没有完全重合时，反射光02朝各个方向发射，则位于所述非反光区域401中的反射光02照射至所述间隙102时，由于倾斜的程度较大，当所述间隙102内设置所述滤光部103时，则在相邻的两所述滤光部103之间区域的上方会发生串色现象。\n\n[0049]在一实施例中，如图7-8所示，所述发光部101包括辅助部1011，所述辅助部1011围绕所述发光部101远离所述反光层20的一侧、以及所述发光部101靠近所述间隙102的两侧而设置，所述辅助部1011用于透出或者遮挡所述发光部101发出的光线。当所述辅助部1011为透明材料时，所述发光部101向所述发光层10远离所述反光层20的一侧发射第二光线04，且第二光线04可以穿过所述辅助部1011；当所述辅助部1011为遮光材料时，用于遮挡所述发光部101向所述发光层10远离所述反光层20的一侧发出的所述第二光线04。\n\n[0050]例如，如图7所示，当所述发光部101发射的所述第二光线04为蓝光时，此时所述第二光线04的颜色处于目标颜色范围之内，所述辅助部1011的组成材料为透光材料，具体的，所述辅助部1011可以为导光板等可以辅助出光的结构，所述辅助部1011可以使得所述处于目标颜色范围之内的光均匀地从所述发光层10远离所述反光层20的一侧发出来，从而与透过所述滤光部103形成的所述出射光03共同组成红光、绿光、蓝光和黄光中的任意三种或者四种颜色的光而形成显示画面。\n\n[0051]又例如，如图7所示，当所述发光部101发射的所述第二光线04为白光时，此时所述第二光线04的颜色不处于所述目标颜色范围之内，所述辅助部1011的组成材料为遮光材料。具体的，所述辅助部1011可以为黑色的有机光阻材料，所述辅助部1011可以对所述白光进行遮挡，避免其从所述发光层10远离所述反光层20的一侧发出来，以至于相邻的所述滤光部103之间发生颜色串扰而影响显示效果。\n\n[0052]在一实施例中，所述目标颜色范围为红色、绿色、蓝色三者的范围。可以理解的，由于红色、绿色、蓝色一般为所述显示面板00显示画面是所需要的基本的三种颜色，故当所述发光部101发射的所述第二光线04的颜色为蓝色时，可以通过采用透光材料制备所述辅助部1011，从而使得所述第二光线04从所述发光层10远离所述反光层20的一侧发出来；另外的，所述发光部101发射的所述第一光线01依次经过所述反光层20、所述滤光部103后会在所述发光层10远离所述反光层20的一侧形成所述出射光03。因此，最终从所述发光层10远离所述反光层20的一侧发出来的光包括所述出射光03和所述第二光线04。\n\n[0053]可以理解的，当所述发光部101发射的所述第二光线04的颜色为处于所述目标颜色范围内的任一颜色时，由于呈现处于所述目标颜色范围内的任一颜色的光线可以同时由所述第二光线04、以及对应的所述出射光03共同产生，而呈现其他颜色的光线仅由对应的所述出射光03产生，因此，可以通过调整所述发光部101、所述滤光部103的尺寸，以减小不同颜色的光线的量的差异。\n\n[0054]在一实施例中，如图9所示，所述显示面板00还包括平坦层50、保护层60，所述平坦层50设于所述反光层20与所述发光层10之间，所述保护层60设于所述发光层10远离所述反光层20的一侧。其中，所述平坦层50可以使得所述发光层10的上方膜层的上表面均处于同一水平面，所述保护层60具备高硬度与耐刮性，可以保护所述显示面板00的外表面。\n\n[0055]本发明提供了显示面板以及显示装置，所述显示面板以及所述显示装置包括发光层和反光层，所述发光层和所述反光层相对设置；所述发光层包括多个发光部，相邻的两所述发光部之间具有间隙，所述发光部向所述反光层发射第一光线，所述第一光线在所述反光层上反射形成反射光，所述反射光穿过所述间隙形成出射光。本发明通过在所述发光层发射所述第一光线的一侧设置所述反光层，以反射所述第一光线、形成所述出射光；降低了Micro LED器件发出的光对人眼造成的伤害，从而提高了Micro LED显示屏的安全性。\n\n[0056]以上对本发明实施例所提供的显示面板以及显示装置进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及显示器件的制造领域，具体涉及显示面板以及显示装置。\n\n背景技术\n\n[0002]Micro LED(Micro Light Emitting Diode，微型发光二极管)技术，即在一个芯片上集成的高密度微小尺寸的LED阵列的技术，利用该技术制备的Micro LED显示屏具备高亮度、高色域、高解析度、省电、反应速度快等优点。\n\n[0003]然而，现有的显示面板中没有对Micro LED器件中发射的光进行反射处理，导致其中大量不可被反射的高能量、穿透性强的光线射入人眼，对人眼造成伤害，导致采用MicroLED技术制备的Micro LED显示屏的安全性较低。\n\n[0004]综上所述，有必要提供一种显示面板以及显示装置，以解决Micro LED显示屏中因Micro LED器件发射的高能量、穿透性强的光线造成的伤害人眼的问题。\n\n发明内容\n\n[0005]本发明目的在于提供显示面板以及显示装置，其中发光层包括多个发光部，通过在发光层发射第一光线的一侧设置反光层，第一光线在反光层上反射形成反射光，反射光穿过间隙形成出射光，解决了现有技术中因Micro LED器件发出的光线中包含了高能量、穿透性强的光线，从而对人眼造成伤害的问题。\n\n[0006]本发明实施例提供一种显示面板，所述显示面板包括发光层和反光层，所述发光层和所述反光层相对设置；\n\n[0007]所述发光层包括多个发光部，相邻的两所述发光部之间具有间隙，所述发光部向所述反光层发射第一光线；\n\n[0008]所述反光层用于反射所述第一光线以形成反射光，所述反射光穿过所述间隙形成出射光。\n\n[0009]在一实施例中，所述发光层还包括多个用于过滤不同颜色的光的滤光部，所述滤光部设于所述间隙中，所述反射光穿过所述滤光部形成对应颜色的所述出射光。\n\n[0010]在一实施例中，所述反光层包括多个反光部，所述反光部与所述间隙相对设置。\n\n[0011]在一实施例中，位于同一所述发光部两侧的两所述滤光部的组成材料或者尺寸相异，使得对应的所述出射光的颜色相异。\n\n[0012]在一实施例中，多个所述滤光部至少包括由色阻材料、光阻材料或者光致发光材料中任意两种不同材料分别组成的两种滤光部。\n\n[0013]在一实施例中，所述发光部为无机发光二极管，所述发光部为Mini/Micro LED，其中，当所述Mini/Micro LED为蓝光Mini/Micro LED时，位于同一所述发光部两侧的两所述滤光部为所述色阻材料、所述光阻材料或者所述光致发光材料组成的红色滤光层和绿色滤光层，所述反射光穿过所述红色滤光层、所述绿色滤光层分别形成红光、绿光。\n\n[0014]在一实施例中，所述发光部包括辅助部，所述辅助部围绕所述发光部远离所述反光层的一侧、以及所述发光部靠近所述间隙的两侧而设置，所述辅助部用于透出或者遮挡所述发光部发出的光线。\n\n[0015]在一实施例中，当所述发光部发出的光线为蓝光时，所述辅助部的组成材料为透光材料，用以透过所述发光部发出的蓝光；当所述发光部发出的光线为白光时，所述辅助部的组成材料为遮光材料，用以遮挡所述发光部发出的白光。\n\n[0016]在一实施例中，当所述发光部发出的光线为蓝光时，所述辅助部的组成材料为透光材料，用以透过所述发光部发出的蓝光，其中，透过所述发光部的蓝光和所述反射光穿过位于同一所述发光部两侧的两所述滤光部分别形成的红光、绿光共同形成显示画面。\n\n[0017]本发明实施例还提供一种显示装置，所述显示装置包括任一如上所述的显示面板。\n\n[0018]本发明提供了显示面板以及显示装置，所述显示面板以及所述显示装置包括发光层和反光层，所述发光层和所述反光层相对设置；所述发光层包括多个发光部，相邻的两所述发光部之间具有间隙，所述发光部向所述反光层发射第一光线，所述第一光线在所述反光层上反射形成反射光，所述反射光穿过所述间隙形成出射光。本发明通过在所述发光层发射所述第一光线的一侧设置所述反光层，以反射所述第一光线、形成所述出射光；降低了Micro LED器件发出的光对人眼造成的伤害，从而提高了Micro LED显示屏的安全性。\n\n附图说明\n\n[0019]下面通过附图来对本发明进行进一步说明。需要说明的是，下面描述中的附图仅仅是用于解释说明本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0020]图1为本发明实施例提供的第一种显示面板的剖面图。\n\n[0021]图2为本发明实施例提供的一种发光部的剖面图。\n\n[0022]图3为本发明实施例提供的第二种显示面板的剖面图。\n\n[0023]图4为本发明实施例提供的一种薄膜晶体管层的俯视图。\n\n[0024]图5为本发明实施例提供的第三种显示面板的剖面图。\n\n[0025]图6为本发明实施例提供的第四种显示面板的剖面图。\n\n[0026]图7为本发明实施例提供的第五种显示面板的剖面图。\n\n[0027]图8为本发明实施例提供的第六种显示面板的剖面图。\n\n[0028]图9为本发明实施例提供的第七种显示面板的剖面图。\n\n具体实施方式\n\n[0029]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整的描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。本领域技术人员显式地和隐式地理解的是，本文所描述的实施例可以与其它实施例相结合。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0030]在本发明的描述中，需要理解的是，术语“上”、“下”、“远离”、“靠近”、“横向”、“纵向”等指示的方位或位置关系为基于附图所示的方位或位置关系，其中，“上”只是表面在物体上方，具体指代正上方、斜上方、上表面都可以，只要居于物体水平之上即可，“靠近”则是指相比较而言，与目标距离更小的一侧，以上方位或位置关系仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。\n\n[0031]另外，还需要说明的是，附图提供的仅仅是和本发明关系比较密切的结构和/或步骤，省略了一些与发明关系不大的细节，目的在于简化附图，使发明点一目了然，而不是表明实际中装置和/或方法就是和附图一模一样，不作为实际中装置和方法的限制。\n\n[0032]本发明提供显示装置，所述显示装置包括如图1-9所示的显示面板或者其中的相关膜层。\n\n[0033]在一实施例中，如图1所示，所述显示面板00包括发光层10和反光层20，所述发光层10和所述反光层20相对设置；所述发光层10包括多个发光部101，相邻的两所述发光部101之间具有间隙102，所述发光部101向所述反光层20发射第一光线01，所述反光层20用于反射所述第一光线01以形成反射光02，所述反射光02穿过所述间隙102形成出射光03。\n\n[0034]其中，所述反光层20的组成材料可以包括银、铝、玻璃中的至少一种，且所述反光层20的反光效率可以大于80％，其中对于某点而言，其反光效率表示：该点的出射光线的量、与该出射光线对应的入射光线的量的比值。具体的，所述反光层20可以为镀银反光层、镀铝反光层或者玻璃反光片。\n\n[0035]在一实施例中，所述发光部101为无机发光二极管，且所述发光部101的宽度可以不小于1微米，且不大于10微米；进一步的，相邻两所述发光部101之间的所述间隙102的宽度也为微米级的数量级。可以理解的，所述发光部101可以通过Micro LED技术制备。\n\n[0036]在一实施例中，如图2所示，所述发光部101可以包括第一半导体层1011、第二半导体层1012、以及设于所述第一半导体层1011和所述第二半导体层1012之间的无机层1013。其中，所述第一半导体层1011、所述第二半导体层1012的组成材料可以分别包括P型掺杂的无机发光材料、N型掺杂的无机发光材料，所述无机层1013的组成材料可以包括氮化镓。所述发光部101用于发射单色光。例如所述发光部101反射出的所述第一光线01可以为白光或者蓝光。\n\n[0037]例如，当所述发光部101反射出的所述第一光线01为蓝光时，所述无机层1013可以采用氮化镓材料制备；又例如，当所述发光部101反射出的所述第一光线01为白光时，可以在所述第一半导体层1011或者所述第二半导体层1012远离所述无机层1013的一侧涂布黄色荧光材料或者量子点材料，使得蓝光与所述黄色荧光材料或者量子点材料作用以后转变为白光。\n\n[0038]可以理解的，穿过每一所述间隙102的所述出射光03的亮度由所述间隙两侧的两个发光部101的发光强度共同决定的，故可以分别控制每一所述发光部101的发光强度，使得每一所述间隙102射出的出射光03的亮度符合要求。\n\n[0039]在一实施例中，如图3-4所示，在所述发光层10下方还可以设置薄膜晶体管层30，所述薄膜晶体管层30可以包括多条栅极线301、多条数据线302，所述多条栅极线301、多条数据线302分别沿横向平行设置、沿纵向平行设置，所述多条栅极线301、多条数据线302相交以限定多个区域，所述多个区域中每一个区域用于承载薄膜晶体管单元或者所述间隙102，进一步的，每一排和每一列中所述薄膜晶体管单元和所述间隙102均交替设置，所述薄膜晶体管单元与所述发光部101相对应，所述薄膜晶体管单元包括第一源极303、第二源极304、漏极305、以及栅极306。可以理解的，所述薄膜晶体管层30可以采用透光材料制备，以保证所述第一光线01照射至所述反光层20上。\n\n[0040]具体的，如图4所示，所述发光部101连接于对应的漏极305与对应的第二源极304之间，例如，所述第一半导体层1011、第二半导体层1012可以分别和所述漏极305、所述第二源极304连接，或者所述第一半导体层1011、第二半导体层1012可以分别和所述第二源极304、所述漏极305连接。需要注意的是，分别位于同一所述数据线302两侧的多个第二源极304与多个第一源极303之间电性连接，即上一级的所述第二源极304与下一级的所述第一源极303中电信号相同。\n\n[0041]可以理解的，位于同一排的多个栅极306电性连接于同一栅极线301，所述栅极线301控制本级的多个薄膜晶体管单元中每一个薄膜晶体管单元的第一源极303与漏极305的导通情况，本级的数据线302通过向本级的第一源极303传递电信号、以控制本级的漏极305的电流或者电压大小、从而控制本级的多个发光部101中每一个发光部101的第一半导体层1011或者第二半导体层1012的电流或者电压大小；下一级的数据线302通过向本级的多个薄膜晶体管单元中每一个薄膜晶体管单元的第二源极304传递电信号、以控制本级的多个发光部101中每一个发光部101的第二半导体层1012或者第一半导体层1011的电流或者电压大小；最终所述发光部101中第一半导体层1011和第二半导体层1012的电流或者电压大小决定所述发光部101的发光情况。\n\n[0042]在一实施例中，如图5所示，所述发光层10还包括多个用于过滤不同颜色的光的滤光部103，所述滤光部103设于所述间隙102中，所述反射光02穿过所述滤光部103形成对应颜色的所述出射光03。\n\n[0043]进一步的，位于同一所述发光部101两侧的两个滤光部103的组成材料或者尺寸相异，使得对应的出射光03的颜色相异。例如，同一排或者同一列中，连续设置的三个所述滤光部103的组成材料或者尺寸相异，可以使得对应的所述出射光03的颜色分别为红色、绿色和蓝色；又例如，同一排或者同一列中，连续设置的四个所述滤光部103的组成材料或者尺寸相异，可以使得对应的所述出射光03分别为红色、绿色、蓝色、黄色和白色中的任意四种颜色的光；又例如，阵列排列为呈矩形的四个所述滤光部103的组成材料或者尺寸相异，可以使得对应的所述出射光03分别为红色、绿色、蓝色、黄色和白色中的任意四种颜色的光。其中，所述三种或者四种颜色的顺序不作限制。可以理解的，当所述出射光03的颜色为白色时，可以提高所述显示面板00整体的亮度。\n\n[0044]其中，所述多个滤光部103至少包括由色阻材料、光阻材料和光致发光材料中任意两种不同材料分别组成的两种滤光部。具体的，所述多个滤光部103可以由所述色阻材料组成，比如由有机颜料组成，当照射到所述色阻材料上的光线的颜色对应的波长、与所述色阻材料本身呈现的颜色对应的波长相近时，所述色阻材料可以使得所述光线通过，并且过滤其它颜色的光线；例如，当所述反射光线02为白光，即所述发光部101为白光Micro/MiniLed时，多个所述滤光部103分别可以为红色色阻材料、绿色色阻材料、蓝色色阻材料对应组成的红色滤光层、绿色滤光层以及蓝色滤光层，白色的所述反射光线02通过所述红色滤光层、绿色滤光层以及蓝色滤光层形成对应的红光、绿光和蓝光，以形成显示画面，当然，所述多个滤光部103还可以分别为红色色阻材料、绿色色阻材料、蓝色色阻材料、黄色色阻材料对应组成的红色滤光层、绿色滤光层、蓝色滤光层、黄色滤光层，在此不做限制。\n\n[0045]进一步的，在此基础上，所述多个滤光部103还可以包括由所述光阻材料组成的透明滤光层，比如由有机透明光阻材料组成，任一颜色的光线可以穿透所述光阻材料后仍然呈现所述光线的原色彩；同理，当所述反射光线02为白光，白色的所述反射光线02通过所述红色滤光层、所述绿色滤光层、所述蓝色滤光层以及所述透明滤光层形成对应的红光、绿光、蓝光和白光，以形成显示画面。\n\n[0046]具体的，多个所述滤光部103可以由所述光致发光材料组成，比如可以由量子点荧光发光材料或者有机发光材料组成，其颜色组成与上述相同，在此不再赘述，可以理解的，当照射到所述光致发光材料上的光线的颜色对应的波长较短时，所述光致发光材料可以吸收蓝光并发出红光或者绿光。进一步地，所述发光部101可以为蓝光Micro/Mini Led，此时，多个所述滤光部103可以分别为由红色色阻材料、绿色色阻材料组成的滤光层，也可以分别为由红色量子点等光致发光材料、绿色量子点等光致发光材料组成的滤光层，进一步的，所述光致发光材料可以为硒化镉的量子点材料，例如为红光量子点材料、绿光量子点材料，分别可以在蓝光短波长的激发下发出高纯度的红光、绿光。\n\n[0047]在一实施例中，如图6所示，所述反光层20包括多个反光部201，所述反光部201与所述间隙102相对设置。进一步的，所述反光层20下方可以设置有基板40，所述基板40用于承载所述多个反光部201，进一步的，所述基板40可以采用玻璃或者塑料等反光率较低的材料制备，具体的，所述基板40的反光效率不高于10％，在此定义所述基板40上与所述发光部101对应的区域为非反光区域401。\n\n[0048]可以理解的，若多个所述反光部201仅与多个所述间隙102相对设置，则所述发光部101发出的第一光线01基本上在所述反光部201上发生反射形成反射光02，而所述非反光区域401基本上不会发生反射。进一步的，所述反光部201的宽度可以等于所述间隙102的宽度，这样，所述反光部201上的所述反射光02可以充分穿透所述间隙102形成所述出射光03。例如，当所述反光部201与所述间隙102在竖直方向没有完全重合时，反射光02朝各个方向发射，则位于所述非反光区域401中的反射光02照射至所述间隙102时，由于倾斜的程度较大，当所述间隙102内设置所述滤光部103时，则在相邻的两所述滤光部103之间区域的上方会发生串色现象。\n\n[0049]在一实施例中，如图7-8所示，所述发光部101包括辅助部1011，所述辅助部1011围绕所述发光部101远离所述反光层20的一侧、以及所述发光部101靠近所述间隙102的两侧而设置，所述辅助部1011用于透出或者遮挡所述发光部101发出的光线。当所述辅助部1011为透明材料时，所述发光部101向所述发光层10远离所述反光层20的一侧发射第二光线04，且第二光线04可以穿过所述辅助部1011；当所述辅助部1011为遮光材料时，用于遮挡所述发光部101向所述发光层10远离所述反光层20的一侧发出的所述第二光线04。\n\n[0050]例如，如图7所示，当所述发光部101发射的所述第二光线04为蓝光时，此时所述第二光线04的颜色处于目标颜色范围之内，所述辅助部1011的组成材料为透光材料，具体的，所述辅助部1011可以为导光板等可以辅助出光的结构，所述辅助部1011可以使得所述处于目标颜色范围之内的光均匀地从所述发光层10远离所述反光层20的一侧发出来，从而与透过所述滤光部103形成的所述出射光03共同组成红光、绿光、蓝光和黄光中的任意三种或者四种颜色的光而形成显示画面。\n\n[0051]又例如，如图7所示，当所述发光部101发射的所述第二光线04为白光时，此时所述第二光线04的颜色不处于所述目标颜色范围之内，所述辅助部1011的组成材料为遮光材料。具体的，所述辅助部1011可以为黑色的有机光阻材料，所述辅助部1011可以对所述白光进行遮挡，避免其从所述发光层10远离所述反光层20的一侧发出来，以至于相邻的所述滤光部103之间发生颜色串扰而影响显示效果。\n\n[0052]在一实施例中，所述目标颜色范围为红色、绿色、蓝色三者的范围。可以理解的，由于红色、绿色、蓝色一般为所述显示面板00显示画面是所需要的基本的三种颜色，故当所述发光部101发射的所述第二光线04的颜色为蓝色时，可以通过采用透光材料制备所述辅助部1011，从而使得所述第二光线04从所述发光层10远离所述反光层20的一侧发出来；另外的，所述发光部101发射的所述第一光线01依次经过所述反光层20、所述滤光部103后会在所述发光层10远离所述反光层20的一侧形成所述出射光03。因此，最终从所述发光层10远离所述反光层20的一侧发出来的光包括所述出射光03和所述第二光线04。\n\n[0053]可以理解的，当所述发光部101发射的所述第二光线04的颜色为处于所述目标颜色范围内的任一颜色时，由于呈现处于所述目标颜色范围内的任一颜色的光线可以同时由所述第二光线04、以及对应的所述出射光03共同产生，而呈现其他颜色的光线仅由对应的所述出射光03产生，因此，可以通过调整所述发光部101、所述滤光部103的尺寸，以减小不同颜色的光线的量的差异。\n\n[0054]在一实施例中，如图9所示，所述显示面板00还包括平坦层50、保护层60，所述平坦层50设于所述反光层20与所述发光层10之间，所述保护层60设于所述发光层10远离所述反光层20的一侧。其中，所述平坦层50可以使得所述发光层10的上方膜层的上表面均处于同一水平面，所述保护层60具备高硬度与耐刮性，可以保护所述显示面板00的外表面。\n\n[0055]本发明提供了显示面板以及显示装置，所述显示面板以及所述显示装置包括发光层和反光层，所述发光层和所述反光层相对设置；所述发光层包括多个发光部，相邻的两所述发光部之间具有间隙，所述发光部向所述反光层发射第一光线，所述第一光线在所述反光层上反射形成反射光，所述反射光穿过所述间隙形成出射光。本发明通过在所述发光层发射所述第一光线的一侧设置所述反光层，以反射所述第一光线、形成所述出射光；降低了Micro LED器件发出的光对人眼造成的伤害，从而提高了Micro LED显示屏的安全性。\n\n[0056]以上对本发明实施例所提供的显示面板以及显示装置进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10746, 23800, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种微型发光二极管转移装置、转移方法及显示装置。\n\n背景技术\n\n[0002]微型发光二极管（Micro-light emitting diodes，MicroLED）是一种新型自发光显示技术，具有亮度高，发光效率好，功耗低，寿命长且轻薄等优点的显示器件，有望成为下一代主流显示技术。与目前主流显示屏幕LCD和OLED相比，其耗电量明显降低，分别为LCD的10%、OLED的50%，且亮度比OLED高几个数量级。\n\n[0003]MicroLED技术主要是将微缩后的几微米到几十微米的LED在基板上进行阵列排布，而形成具有高密度微小尺寸的LED阵列。但目前MicroLED的发展受制于芯片（巨量）转移等关键技术。然而目前，通过巨量转移及巨量转移后的芯片与基板的键合是MicroLED显示技术实现良率提升的瓶颈所在。\n\n[0004]现如今，MicroLED转移技术路线主要有范德华力、静电吸附、流体自组装、辐射激光等方式进行转移，完成对位后再进行加热进行焊接，但这些转移方法过程中，都存在速度慢、严重影响MicroLED的量产化。\n\n发明内容\n\n[0005]本申请实施例提供一种微型发光二极管转移装置、转移方法及显示装置，能够提高微型发光二极管的转移速度，使得微型发光二极管技术能够更加适合量产。\n\n[0006]本申请提供一种微型发光二极管转移装置，包括：\n\n[0007]收集管，具有相对设置的第一端和第二端，所述收集管包括收集口和存储管，所述收集口与所述存储管连通，所述收集口设置在所述第一端；\n\n[0008]驱动装置，设置在所述第二端，所述驱动装置用于提供驱动力；\n\n[0009]其中，所述驱动装置提供驱动力以使得所述微型发光二极管从所述收集口被拾取到所述存储管内，所述存储管可层叠存储至少两个微型发光二极管。\n\n[0010]在一些实施例中，所述收集管包括至少两个，多个所述收集管与同一驱动装置连接，所述收集管与所述驱动装置可拆卸连接，所述存储管包括至少两个子连接管，所述子连接管与子连接管可拆卸连接。\n\n[0011]在一些实施例中，还包括激光剥离装置，所述激光剥离装置用于剥离所述微型发光二极管。\n\n[0012]在一些实施例中，所述收集管为圆柱形腔体、长方形腔体、三角形腔体、菱形腔体、多边形腔体中的任一种。\n\n[0013]在一些实施例中，所述收集管材料为聚酰亚胺塑料、聚乙烯塑料、聚对苯二甲酸乙二醇酯塑料、玻璃、石英、金属中的任一种。\n\n[0014]本申请实施例还提供一种微型发光二极管转移方法，包括：\n\n[0015]采用微型发光二极管转移装置从临时基板上拾取微型发光二极管，其中所述微型发光二极管转移装置为以上所述的微型发光二极管转移装置；\n\n[0016]将所述微型发光二极管存储在所述微型发光二极管转移装置的收集管中；\n\n[0017]将所述收集管中的微型发光二极管转移到目标基板上。\n\n[0018]在一些实施例中，所述采用微型发光二极管转移装置从临时基板上拾取微型发光二极管，包括：\n\n[0019]通过驱动装置提供驱动力从临时基板上拾取微型发光二极管，其中，所述驱动力为真空力、电磁力、静电力、装置内充满液体时产生的毛细管力中任一种。\n\n[0020]在一些实施例中，所述采用微型发光二极管转移装置从临时基板上拾取微型发光二极管，包括：\n\n[0021]将微型发光二极管从临时基板上剥离；\n\n[0022]微型发光二极管转移装置拾取从临时基板上剥离的微型发光二极管。\n\n[0023]在一些实施例中，所述采用微型发光二极管转移装置从临时基板上拾取微型发光二极管，之前包括：\n\n[0024]检测所述微型发光二极管是否合格；\n\n[0025]若所述微型发光二极管不合格，将不合格的微型发光二极管通过微型发光二极管转移装置转移到存储区域中。\n\n[0026]一种显示装置，采用以上所述方法制造的显示装置。\n\n[0027]本申请实施例所提供的微型发光二极管转移装置包括收集管和驱动装置，收集管具有相对设置的第一端和第二端，所述收集管包括收集口和存储管，所述收集口与所述存储管连通，所述收集口设置在所述第一端,驱动装置设置在所述第二端，所述驱动装置用于提供驱动力，其中，所述驱动装置用于提供驱动力以使得所述微型发光二极管从所收集口被拾取到所述存储管内，所述存储管可层叠存储若干微型发光二极管。传统的微型发光二极管转移装置采用阵列式转印头拾取微型发光二极管，这种阵列式转印头只能对应一种临时基板进行拾取，如果临时基板上的微型发光二极管的间距改变，就要更换转印头，而本申请微型发光二极管转移装置，可以将微型发光二极管依次独立地从收集口拾取并存储到存储管内，采用此方式，可以对不同区域的微型发光二极管进行拾取，从而可以适应于从多个规格的基板上拾取微型发光二极管，提高了收集微型发光二极管的灵活性，并且，本申请可对微型发光二极管单独进行拾取，或直接释放至目标基板。进一步提高微型发光二极管在转移过程中的便利性，使得微型发光二极管技术更加适合量产。\n\n附图说明\n\n[0028]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0029]图1是本申请实施例提供的微型发光二极管转移装置结构示意图。\n\n[0030]图2是本申请实施例提供的微型发光二极管转移装置转移微型发光二极管后的结构示意图。\n\n[0031]图3是本申请实施例提供的另一种微型发光二极管转移装置的结构示意图。\n\n[0032]图4是本申请实施例提供的又一种微型发光二极管转移装置的结构示意图。\n\n[0033]图5是本申请实施例提供的微型发光二极管转移方法的流程示意图。\n\n[0034]图6是本申请实施例提供的显示装置的结构示意图。\n\n具体实施方式\n\n[0035]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0036]需要说明的是，在本申请的描述中，需要理解的是，术语“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。\n\n[0037]本申请实施例提供一种微型发光二极管转移装置、转移方法及显示装置，以下微型发光二极管转移装置做详细介绍。\n\n[0038]请参阅图1和图2，图1是本申请实施例提供的微型发光二极管转移装置结构示意图。图2是本申请实施例提供的微型发光二极管转移装置转移微型发光二极管后的结构示意图。\n\n[0039]其中，微型发光二极管转移装置10包括收集管11和驱动装置12，收集管11具有相对设置的第一端11a和第二端11b，所述收集管11包括收集口111和存储管112，所述收集口111与所述存储管112连通，所述收集口111设置在所述第一端11a，驱动装置12设置在所述第二端11b，所述驱动装置12用于提供驱动力，其中，所述驱动装置12用于提供驱动力以使得所述微型发光二极管20从所述收集口111被拾取到所述存储管112内，所述存储管112可层叠存储至少两个微型发光二极管20。\n\n[0040]需要说明的是，第一端11a可以为收集管11的下端，第二端11b可以为收集管11的上端面。当然，第一端11a也可以为收集管11的上端，第二端11b可以为收集管11的上表面。可以理解的是，第一端11a和第二端11b只是说明收集管11的相对位置关系，可以根据具体的使用情况进行位置互换。\n\n[0041]请参阅图3，图3是本申请实施例提供的另一种微型发光二极管转移装置10的结构示意图。其中，所述收集管11包括至少两个，多个所述收集管11与同一驱动装置12连接。可以理解的是，通过多个收集管11可以同时拾取微型发光二极管20。这样可以大大提高拾取微型发光二极管20的速度。\n\n[0042]具体的，所述收集管11与所述驱动装置12可拆卸连接，所述收集管包括至少两个子连接管，所述子连接管与子连接管可拆卸连接。更加具体的，收集管11和驱动装置12可以采用螺纹连接或者卡扣连接的方式实现可拆卸连接。子连接管和子连接管也可以采用螺纹连接或者卡扣连接的方式实现可拆卸连接。当然还可以采用其他可拆卸连接的方式，本申请实施例中不过多赘述。\n\n[0043]需要说明的是，收集管11与驱动装置12可拆卸连接，这样可以使得运输或者转移微型发光二极管转移装置能够更加方便，同时，子连接管与子连接管可拆卸连接，这样可以根据需要拓展存储的空间，提高微型发光二极管转移装置的适用范围。\n\n[0044]具体的，每一个收集管11均连接同一个驱动装置12，这样可以通过驱动装置12使得所有收集管11统一拾取微型发光二极管20，这样不仅能够提升拾取微型发光二极管20的效率，同时还能够降低成本。\n\n[0045]另外的，每一个收集管11可以独立连接一个驱动装置12，这样可以根据需要对特定区域的微型发光二极管20进行拾取。比如，微型发光二极管20还可以包括一个检测装置，该检测装置可以检测微型发光二极管20是否合格，若检测到微型发光二极管20不合格，则可以控制对应的驱动装置12将不合格的微型发光二极管20拾取后，放入废品存储区域。又或者，将不合格的微型发光二极管20存储在微型发光二极管20中。\n\n[0046]其中，驱动装置12可以包括处理器121和动力机构122，处理器121可以接受处理信号，并控制动力机构122产生动力。可以理解的是，动力机构122可以是真空泵，真空泵可以产生真空吸引力，通过真空吸引力从而使得收集管11可以拾取微型发光二极管20。当然，动力机构122也可以是电磁装置，电磁装置可以产生电磁力，电磁力可以使得收集管11可以拾取微型发光二极管。当然，动力机构122不限于此，本申请实施例中不做过多赘述。\n\n[0047]请参阅图4，图4是本申请实施例提供的又一种微型发光二极管转移装置10的结构示意图。其中，微型发光二极管20还包括激光剥离装置13，所述激光剥离装置13用于剥离所述微型发光二极管20。\n\n[0048]通过激光剥离装置13将微型发光二极管20从临时基板30上剥离，微型发光二极管转移装置10可以拾取激光剥离装置13剥离后的微型发光二极管20。同时，微型发光二极管转移装置10在拾取剥离的微型发光二极管20时，可以通过重力拾取微型发光二极管20。另外的，在收集管11拾取微型发光二极管20的过程中，可以控制驱动装置12产生驱动力，从而控制微型发光二极管20在收集管11中的下降速度。\n\n[0049]其中，所述收集管11为圆柱形腔体、长方形腔体、三角形腔体、菱形腔体、多边形腔体中的任一种。\n\n[0050]可以理解的是，收集管11的形状不限于此，收集管11还可以根据微型发光二极管20的形状做适应性的调整。\n\n[0051]比如，微型发光二极管20的形状为圆形的，那么收集管11的形状为圆柱形。收集管11的管径大于微型发光二极管20的的直径。当微型发光二极管20收纳在收集管11中时，微型发光二极管20可以依次层叠堆积，因此，收集管11可以收集多个微型发光二极管20。同时，由于收集的微型发光二极管20时层叠堆积的，因此，将微型发光二极管20转移到目标基板上时能够很好的排列。这样进一步的提高了微型发光二极管20的转移速度。\n\n[0052]其中，所述收集管11材料为聚酰亚胺塑料、聚乙烯塑料、聚对苯二甲酸乙二醇酯塑料、玻璃、石英、金属中的任一种。\n\n[0053]可以理解的是，收集管11的材料不限于此，收集管11具体采用的材料还可以是其他材料。例如陶瓷等。\n\n[0054]本申请实施例所提供的微型发光二极管转移装置10包括收集管11和驱动装置12，收集管11具有相对设置的第一端11a和第二端11b，所述收集管11包括收集口111和存储管112，所述收集口111与所述存储管112连通，所述收集口111设置在所述第一端11a，驱动装置12设置在所述第二端11b，所述驱动装置12用于提供驱动力，其中，所述驱动装置12用于提供驱动力以使得所述微型发光二极管20从所述收集口111被拾取到所述存储管112内，所述存储管112可层叠存储若干微型发光二极管20。传统的微型发光二极管转移装置采用阵列式转印头拾取微型发光二极管，这种阵列式转印头只能对应一种临时基板进行拾取，如果临时基板上的微型发光二极管的间距改变，就要更换转印头，而本申请微型发光二极管转移装置10，可以将微型发光二极管10依次独立地从收集口111拾取并存储到存储管112内，采用此方式，可以对不同区域的微型发光二极管20进行拾取，从而可以适应于从多个规格的基板上拾取微型发光二极管20，提高了收集微型发光二极管20的灵活性，并且，本申请可对微型发光二极管20单独进行拾取，或直接释放至目标基板。进一步提高微型发光二极管20在转移过程中的便利性，使得微型发光二极管20技术更加适合量产。\n\n[0055]请参阅图5，图5是本申请实施例提供的微型发光二极管转移方法的流程示意图。其中，本申请实施例提供的一种微型发光二极管转移方法，包括如下步骤：\n\n[0056]201、采用微型发光二极管转移装置从临时基板上拾取微型发光二极管。\n\n[0057]需要说明的是，微型发光二极管转移装置为上述实施例中所述的微型发光二极管。由于上述实施例中微型发光二极管已经进行了详细的描述，因此，本申请实施例中对微型发光二极管转移装置不做过多赘述。\n\n[0058]另外的，微型发光二极管转移装置中可以包括多个收集管同时拾取临时基板上的微型发光二极管。这样可以加快拾取微型发光二极管的速度。\n\n[0059]202将所述微型发光二极管存储在所述微型发光二极管转移装置的收集管中。\n\n[0060]需要说明的是，收集管的形状可以为圆柱形腔体、长方形腔体、三角形腔体、菱形腔体、多边形腔体中的任一种。收集管的形状可以根据微型发光二极管的具体形状做适应性的调整。\n\n[0061]其中，所述收集管包括收集口和存储管，所述收集口与所述存储管连通，所述收集口设置在所述第一端，也就是说，微型发光二极管从收集口进入到存储管内，利用存储管存储微型发光二极管。且微型发光二极管层叠存储在存储管内。\n\n[0062]比如，微型发光二极管的形状为圆形的，那么收集管的形状为圆柱形。收集管的管径大于微型发光二极管的直径。当微型发光二极管收纳在收集管中时，微型发光二极管可以依次层叠堆积，因此，收集管可以收集多个微型发光二极管。同时，由于收集的微型发光二极管是层叠堆积的，因此，将微型发光二极管转移到目标基板上时能够很好的排列。这样进一步地提高了微型发光二极管的转移速度。\n\n[0063]203将所述收集管中的微型发光二极管转移到目标基板上。\n\n[0064]需要说明的是，将收集管中的微型发光二极管与目标基板完成对位，将微型发光准确的转移到目标基板上，从而完成微型发光二极管的转移。\n\n[0065]在一些实施例中，所述步骤“所述采用微型发光二极管转移装置从临时基板上拾取微型发光二极管”，包括步骤：\n\n[0066]通过驱动装置提供驱动力从临时基板上拾取微型发光二极管，其中，所述驱动力为真空力、电磁力、静电力、装置内充满液体时产生的毛细管力中任一种。\n\n[0067]需要说明的是，驱动装置可以包括处理器和动力装置，处理器可以接受处理信号，并控制动力装置产生动力。可以理解的是，动力装置可以是真空泵，真空泵可以产生真空吸引力，通过真空吸引力从而使得收集管可以拾取微型发光二极管。当然，动力装置也可以是电磁装置，电磁装置可以产生电磁力，电磁力可以使得收集管可以拾取微型发光二极管。当然，动力装置不限于此，本申请实施例中不做过多赘述。\n\n[0068]在一些实施例中，所述步骤“所述采用微型发光二极管转移装置从临时基板上拾取微型发光二极管”，包括步骤：\n\n[0069]（1）、将微型发光二极管从临时基板上剥离。\n\n[0070]需要说明的是，将微型发光二极管从临时基板上剥离的方式可以是通过微型发光二极管转移剥离。具体的，通过微型发光二极管转移装置中的驱动装置，产生吸力，从而使得微型发光二极管从临时基板上剥离。通过微型发光二极管转移装置将微型发光二极管从临时基板上剥离，这种方式，不需要额外增加一道剥离工序，这样能够加快微型发光二极管的转移速度。\n\n[0071]具体的，将微型发光二极管通过激光剥离装置从临时基板上剥离。\n\n[0072]需要说明的是，通过激光剥离装置将微型发光二极管从临时基板上剥离，微型发光二极管转移装置可以拾取激光剥离装置剥离后的微型发光二极管。同时，微型发光二极管转移装置在拾取剥离的微型发光二极管时，可以通过重力拾取微型发光二极管。另外的，在收集管拾取微型发光二极管的过程中，可以控制驱动装置的产生驱动力，从而控制微型发光二极管在收集管中的下降速度。\n\n[0073]（2）、微型发光二极管转移装置拾取从临时基板上剥离的微型发光二极管。\n\n[0074]需要说明的是，收集管不仅将微型发光二极管从临时基板上剥离，同时收集管还将微型发光二极管收集并存储到收集管中，这样收集管能够起到多个作用，减少了转移微型发光二极管的工序，这样加快了转移微型发光二极管的速度。\n\n[0075]在一些实施例中，所述步骤“所述采用微型发光二极管转移装置从临时基板上拾取微型发光二极管”之前，包括步骤：\n\n[0076]（1）检测所述微型发光二极管是否合格。\n\n[0077]需要说明的是，通过检测装置检测微型发光二极管是否合格。具体的检测方式可以检测微型发光二极管的电学特性、光学特性等是否符合规定。若微型发光二极管的电学特性或者光学特性合格则确认该微型发光二极管为合格的微型发光二极管。如果微型发光二极管的电学特性或者光学特性不合格则确认该微型发光二极管为不合格的微型发光二极管\n\n[0078]（2）若所述微型发光二极管不合格，将不合格的微型发光二极管通过微型发光二极管转移装置转移到存储区域中。\n\n[0079]需要说明的是，存储区域可以是一个用来存储不合格微型发光二极管的存储装置，也可以是存储在收集管内。如果，不合格的微型发光二极管存储在收集管内，则需要对不合格的微型发光二极管做出标记。从而确保不合格的微型发光二极管不会转移到目标基板上。可以理解的是，本申请实施例中所述的标记可以是处理器中的一种处理方式。\n\n[0080]通过本申请实施例中对微型发光二极管的检测，可以确保将合格的微型发光二极管转移到目标基板上，从而确保转移到目标基板的微型发光二极管是可用的，这样可以提高显示装置的效果。\n\n[0081]由于采用本申请微型发光二极管转移方法，可以对不同区域的微型发光二极管进行拾取，有效提高转移速度，并且，可对微型发光二极管单独进行拾取，或直接释放至目标基板。进一步提高微型发光二极管在转移过程中的便利性，使得微型发光二极管技术更加适合量产。\n\n[0082]请参阅图6，图6是本申请实施例提供的显示装置100的结构示意图。其中，显示装置100包括基板102和微型发光二极管层101，所述微型发光二极管层101是采用上述微型发光二极管20转移方法转移的，上述实施例中微型发光二极管20转移方法已经详细描述，本申请实施例中不在过多赘述。\n\n[0083]由于本申请实施例采用上述实施例中的微型发光二极管20转移方法，因此，本申请的显示装置100制造速度非常快，适合量产。\n\n[0084]以上对本申请实施例提供的微型发光二极管转移装置、转移方法及显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种微型发光二极管转移装置、转移方法及显示装置。\n\n背景技术\n\n[0002]微型发光二极管（Micro-light emitting diodes，MicroLED）是一种新型自发光显示技术，具有亮度高，发光效率好，功耗低，寿命长且轻薄等优点的显示器件，有望成为下一代主流显示技术。与目前主流显示屏幕LCD和OLED相比，其耗电量明显降低，分别为LCD的10%、OLED的50%，且亮度比OLED高几个数量级。\n\n[0003]MicroLED技术主要是将微缩后的几微米到几十微米的LED在基板上进行阵列排布，而形成具有高密度微小尺寸的LED阵列。但目前MicroLED的发展受制于芯片（巨量）转移等关键技术。然而目前，通过巨量转移及巨量转移后的芯片与基板的键合是MicroLED显示技术实现良率提升的瓶颈所在。\n\n[0004]现如今，MicroLED转移技术路线主要有范德华力、静电吸附、流体自组装、辐射激光等方式进行转移，完成对位后再进行加热进行焊接，但这些转移方法过程中，都存在速度慢、严重影响MicroLED的量产化。\n\n发明内容\n\n[0005]本申请实施例提供一种微型发光二极管转移装置、转移方法及显示装置，能够提高微型发光二极管的转移速度，使得微型发光二极管技术能够更加适合量产。\n\n[0006]本申请提供一种微型发光二极管转移装置，包括：\n\n[0007]收集管，具有相对设置的第一端和第二端，所述收集管包括收集口和存储管，所述收集口与所述存储管连通，所述收集口设置在所述第一端；\n\n[0008]驱动装置，设置在所述第二端，所述驱动装置用于提供驱动力；\n\n[0009]其中，所述驱动装置提供驱动力以使得所述微型发光二极管从所述收集口被拾取到所述存储管内，所述存储管可层叠存储至少两个微型发光二极管。\n\n[0010]在一些实施例中，所述收集管包括至少两个，多个所述收集管与同一驱动装置连接，所述收集管与所述驱动装置可拆卸连接，所述存储管包括至少两个子连接管，所述子连接管与子连接管可拆卸连接。\n\n[0011]在一些实施例中，还包括激光剥离装置，所述激光剥离装置用于剥离所述微型发光二极管。\n\n[0012]在一些实施例中，所述收集管为圆柱形腔体、长方形腔体、三角形腔体、菱形腔体、多边形腔体中的任一种。\n\n[0013]在一些实施例中，所述收集管材料为聚酰亚胺塑料、聚乙烯塑料、聚对苯二甲酸乙二醇酯塑料、玻璃、石英、金属中的任一种。\n\n[0014]本申请实施例还提供一种微型发光二极管转移方法，包括：\n\n[0015]采用微型发光二极管转移装置从临时基板上拾取微型发光二极管，其中所述微型发光二极管转移装置为以上所述的微型发光二极管转移装置；\n\n[0016]将所述微型发光二极管存储在所述微型发光二极管转移装置的收集管中；\n\n[0017]将所述收集管中的微型发光二极管转移到目标基板上。\n\n[0018]在一些实施例中，所述采用微型发光二极管转移装置从临时基板上拾取微型发光二极管，包括：\n\n[0019]通过驱动装置提供驱动力从临时基板上拾取微型发光二极管，其中，所述驱动力为真空力、电磁力、静电力、装置内充满液体时产生的毛细管力中任一种。\n\n[0020]在一些实施例中，所述采用微型发光二极管转移装置从临时基板上拾取微型发光二极管，包括：\n\n[0021]将微型发光二极管从临时基板上剥离；\n\n[0022]微型发光二极管转移装置拾取从临时基板上剥离的微型发光二极管。\n\n[0023]在一些实施例中，所述采用微型发光二极管转移装置从临时基板上拾取微型发光二极管，之前包括：\n\n[0024]检测所述微型发光二极管是否合格；\n\n[0025]若所述微型发光二极管不合格，将不合格的微型发光二极管通过微型发光二极管转移装置转移到存储区域中。\n\n[0026]一种显示装置，采用以上所述方法制造的显示装置。\n\n[0027]本申请实施例所提供的微型发光二极管转移装置包括收集管和驱动装置，收集管具有相对设置的第一端和第二端，所述收集管包括收集口和存储管，所述收集口与所述存储管连通，所述收集口设置在所述第一端,驱动装置设置在所述第二端，所述驱动装置用于提供驱动力，其中，所述驱动装置用于提供驱动力以使得所述微型发光二极管从所收集口被拾取到所述存储管内，所述存储管可层叠存储若干微型发光二极管。传统的微型发光二极管转移装置采用阵列式转印头拾取微型发光二极管，这种阵列式转印头只能对应一种临时基板进行拾取，如果临时基板上的微型发光二极管的间距改变，就要更换转印头，而本申请微型发光二极管转移装置，可以将微型发光二极管依次独立地从收集口拾取并存储到存储管内，采用此方式，可以对不同区域的微型发光二极管进行拾取，从而可以适应于从多个规格的基板上拾取微型发光二极管，提高了收集微型发光二极管的灵活性，并且，本申请可对微型发光二极管单独进行拾取，或直接释放至目标基板。进一步提高微型发光二极管在转移过程中的便利性，使得微型发光二极管技术更加适合量产。\n\n附图说明\n\n[0028]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0029]图1是本申请实施例提供的微型发光二极管转移装置结构示意图。\n\n[0030]图2是本申请实施例提供的微型发光二极管转移装置转移微型发光二极管后的结构示意图。\n\n[0031]图3是本申请实施例提供的另一种微型发光二极管转移装置的结构示意图。\n\n[0032]图4是本申请实施例提供的又一种微型发光二极管转移装置的结构示意图。\n\n[0033]图5是本申请实施例提供的微型发光二极管转移方法的流程示意图。\n\n[0034]图6是本申请实施例提供的显示装置的结构示意图。\n\n具体实施方式\n\n[0035]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0036]需要说明的是，在本申请的描述中，需要理解的是，术语“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。\n\n[0037]本申请实施例提供一种微型发光二极管转移装置、转移方法及显示装置，以下微型发光二极管转移装置做详细介绍。\n\n[0038]请参阅图1和图2，图1是本申请实施例提供的微型发光二极管转移装置结构示意图。图2是本申请实施例提供的微型发光二极管转移装置转移微型发光二极管后的结构示意图。\n\n[0039]其中，微型发光二极管转移装置10包括收集管11和驱动装置12，收集管11具有相对设置的第一端11a和第二端11b，所述收集管11包括收集口111和存储管112，所述收集口111与所述存储管112连通，所述收集口111设置在所述第一端11a，驱动装置12设置在所述第二端11b，所述驱动装置12用于提供驱动力，其中，所述驱动装置12用于提供驱动力以使得所述微型发光二极管20从所述收集口111被拾取到所述存储管112内，所述存储管112可层叠存储至少两个微型发光二极管20。\n\n[0040]需要说明的是，第一端11a可以为收集管11的下端，第二端11b可以为收集管11的上端面。当然，第一端11a也可以为收集管11的上端，第二端11b可以为收集管11的上表面。可以理解的是，第一端11a和第二端11b只是说明收集管11的相对位置关系，可以根据具体的使用情况进行位置互换。\n\n[0041]请参阅图3，图3是本申请实施例提供的另一种微型发光二极管转移装置10的结构示意图。其中，所述收集管11包括至少两个，多个所述收集管11与同一驱动装置12连接。可以理解的是，通过多个收集管11可以同时拾取微型发光二极管20。这样可以大大提高拾取微型发光二极管20的速度。\n\n[0042]具体的，所述收集管11与所述驱动装置12可拆卸连接，所述收集管包括至少两个子连接管，所述子连接管与子连接管可拆卸连接。更加具体的，收集管11和驱动装置12可以采用螺纹连接或者卡扣连接的方式实现可拆卸连接。子连接管和子连接管也可以采用螺纹连接或者卡扣连接的方式实现可拆卸连接。当然还可以采用其他可拆卸连接的方式，本申请实施例中不过多赘述。\n\n[0043]需要说明的是，收集管11与驱动装置12可拆卸连接，这样可以使得运输或者转移微型发光二极管转移装置能够更加方便，同时，子连接管与子连接管可拆卸连接，这样可以根据需要拓展存储的空间，提高微型发光二极管转移装置的适用范围。\n\n[0044]具体的，每一个收集管11均连接同一个驱动装置12，这样可以通过驱动装置12使得所有收集管11统一拾取微型发光二极管20，这样不仅能够提升拾取微型发光二极管20的效率，同时还能够降低成本。\n\n[0045]另外的，每一个收集管11可以独立连接一个驱动装置12，这样可以根据需要对特定区域的微型发光二极管20进行拾取。比如，微型发光二极管20还可以包括一个检测装置，该检测装置可以检测微型发光二极管20是否合格，若检测到微型发光二极管20不合格，则可以控制对应的驱动装置12将不合格的微型发光二极管20拾取后，放入废品存储区域。又或者，将不合格的微型发光二极管20存储在微型发光二极管20中。\n\n[0046]其中，驱动装置12可以包括处理器121和动力机构122，处理器121可以接受处理信号，并控制动力机构122产生动力。可以理解的是，动力机构122可以是真空泵，真空泵可以产生真空吸引力，通过真空吸引力从而使得收集管11可以拾取微型发光二极管20。当然，动力机构122也可以是电磁装置，电磁装置可以产生电磁力，电磁力可以使得收集管11可以拾取微型发光二极管。当然，动力机构122不限于此，本申请实施例中不做过多赘述。\n\n[0047]请参阅图4，图4是本申请实施例提供的又一种微型发光二极管转移装置10的结构示意图。其中，微型发光二极管20还包括激光剥离装置13，所述激光剥离装置13用于剥离所述微型发光二极管20。\n\n[0048]通过激光剥离装置13将微型发光二极管20从临时基板30上剥离，微型发光二极管转移装置10可以拾取激光剥离装置13剥离后的微型发光二极管20。同时，微型发光二极管转移装置10在拾取剥离的微型发光二极管20时，可以通过重力拾取微型发光二极管20。另外的，在收集管11拾取微型发光二极管20的过程中，可以控制驱动装置12产生驱动力，从而控制微型发光二极管20在收集管11中的下降速度。\n\n[0049]其中，所述收集管11为圆柱形腔体、长方形腔体、三角形腔体、菱形腔体、多边形腔体中的任一种。\n\n[0050]可以理解的是，收集管11的形状不限于此，收集管11还可以根据微型发光二极管20的形状做适应性的调整。\n\n[0051]比如，微型发光二极管20的形状为圆形的，那么收集管11的形状为圆柱形。收集管11的管径大于微型发光二极管20的的直径。当微型发光二极管20收纳在收集管11中时，微型发光二极管20可以依次层叠堆积，因此，收集管11可以收集多个微型发光二极管20。同时，由于收集的微型发光二极管20时层叠堆积的，因此，将微型发光二极管20转移到目标基板上时能够很好的排列。这样进一步的提高了微型发光二极管20的转移速度。\n\n[0052]其中，所述收集管11材料为聚酰亚胺塑料、聚乙烯塑料、聚对苯二甲酸乙二醇酯塑料、玻璃、石英、金属中的任一种。\n\n[0053]可以理解的是，收集管11的材料不限于此，收集管11具体采用的材料还可以是其他材料。例如陶瓷等。\n\n[0054]本申请实施例所提供的微型发光二极管转移装置10包括收集管11和驱动装置12，收集管11具有相对设置的第一端11a和第二端11b，所述收集管11包括收集口111和存储管112，所述收集口111与所述存储管112连通，所述收集口111设置在所述第一端11a，驱动装置12设置在所述第二端11b，所述驱动装置12用于提供驱动力，其中，所述驱动装置12用于提供驱动力以使得所述微型发光二极管20从所述收集口111被拾取到所述存储管112内，所述存储管112可层叠存储若干微型发光二极管20。传统的微型发光二极管转移装置采用阵列式转印头拾取微型发光二极管，这种阵列式转印头只能对应一种临时基板进行拾取，如果临时基板上的微型发光二极管的间距改变，就要更换转印头，而本申请微型发光二极管转移装置10，可以将微型发光二极管10依次独立地从收集口111拾取并存储到存储管112内，采用此方式，可以对不同区域的微型发光二极管20进行拾取，从而可以适应于从多个规格的基板上拾取微型发光二极管20，提高了收集微型发光二极管20的灵活性，并且，本申请可对微型发光二极管20单独进行拾取，或直接释放至目标基板。进一步提高微型发光二极管20在转移过程中的便利性，使得微型发光二极管20技术更加适合量产。\n\n[0055]请参阅图5，图5是本申请实施例提供的微型发光二极管转移方法的流程示意图。其中，本申请实施例提供的一种微型发光二极管转移方法，包括如下步骤：\n\n[0056]201、采用微型发光二极管转移装置从临时基板上拾取微型发光二极管。\n\n[0057]需要说明的是，微型发光二极管转移装置为上述实施例中所述的微型发光二极管。由于上述实施例中微型发光二极管已经进行了详细的描述，因此，本申请实施例中对微型发光二极管转移装置不做过多赘述。\n\n[0058]另外的，微型发光二极管转移装置中可以包括多个收集管同时拾取临时基板上的微型发光二极管。这样可以加快拾取微型发光二极管的速度。\n\n[0059]202将所述微型发光二极管存储在所述微型发光二极管转移装置的收集管中。\n\n[0060]需要说明的是，收集管的形状可以为圆柱形腔体、长方形腔体、三角形腔体、菱形腔体、多边形腔体中的任一种。收集管的形状可以根据微型发光二极管的具体形状做适应性的调整。\n\n[0061]其中，所述收集管包括收集口和存储管，所述收集口与所述存储管连通，所述收集口设置在所述第一端，也就是说，微型发光二极管从收集口进入到存储管内，利用存储管存储微型发光二极管。且微型发光二极管层叠存储在存储管内。\n\n[0062]比如，微型发光二极管的形状为圆形的，那么收集管的形状为圆柱形。收集管的管径大于微型发光二极管的直径。当微型发光二极管收纳在收集管中时，微型发光二极管可以依次层叠堆积，因此，收集管可以收集多个微型发光二极管。同时，由于收集的微型发光二极管是层叠堆积的，因此，将微型发光二极管转移到目标基板上时能够很好的排列。这样进一步地提高了微型发光二极管的转移速度。\n\n[0063]203将所述收集管中的微型发光二极管转移到目标基板上。\n\n[0064]需要说明的是，将收集管中的微型发光二极管与目标基板完成对位，将微型发光准确的转移到目标基板上，从而完成微型发光二极管的转移。\n\n[0065]在一些实施例中，所述步骤“所述采用微型发光二极管转移装置从临时基板上拾取微型发光二极管”，包括步骤：\n\n[0066]通过驱动装置提供驱动力从临时基板上拾取微型发光二极管，其中，所述驱动力为真空力、电磁力、静电力、装置内充满液体时产生的毛细管力中任一种。\n\n[0067]需要说明的是，驱动装置可以包括处理器和动力装置，处理器可以接受处理信号，并控制动力装置产生动力。可以理解的是，动力装置可以是真空泵，真空泵可以产生真空吸引力，通过真空吸引力从而使得收集管可以拾取微型发光二极管。当然，动力装置也可以是电磁装置，电磁装置可以产生电磁力，电磁力可以使得收集管可以拾取微型发光二极管。当然，动力装置不限于此，本申请实施例中不做过多赘述。\n\n[0068]在一些实施例中，所述步骤“所述采用微型发光二极管转移装置从临时基板上拾取微型发光二极管”，包括步骤：\n\n[0069]（1）、将微型发光二极管从临时基板上剥离。\n\n[0070]需要说明的是，将微型发光二极管从临时基板上剥离的方式可以是通过微型发光二极管转移剥离。具体的，通过微型发光二极管转移装置中的驱动装置，产生吸力，从而使得微型发光二极管从临时基板上剥离。通过微型发光二极管转移装置将微型发光二极管从临时基板上剥离，这种方式，不需要额外增加一道剥离工序，这样能够加快微型发光二极管的转移速度。\n\n[0071]具体的，将微型发光二极管通过激光剥离装置从临时基板上剥离。\n\n[0072]需要说明的是，通过激光剥离装置将微型发光二极管从临时基板上剥离，微型发光二极管转移装置可以拾取激光剥离装置剥离后的微型发光二极管。同时，微型发光二极管转移装置在拾取剥离的微型发光二极管时，可以通过重力拾取微型发光二极管。另外的，在收集管拾取微型发光二极管的过程中，可以控制驱动装置的产生驱动力，从而控制微型发光二极管在收集管中的下降速度。\n\n[0073]（2）、微型发光二极管转移装置拾取从临时基板上剥离的微型发光二极管。\n\n[0074]需要说明的是，收集管不仅将微型发光二极管从临时基板上剥离，同时收集管还将微型发光二极管收集并存储到收集管中，这样收集管能够起到多个作用，减少了转移微型发光二极管的工序，这样加快了转移微型发光二极管的速度。\n\n[0075]在一些实施例中，所述步骤“所述采用微型发光二极管转移装置从临时基板上拾取微型发光二极管”之前，包括步骤：\n\n[0076]（1）检测所述微型发光二极管是否合格。\n\n[0077]需要说明的是，通过检测装置检测微型发光二极管是否合格。具体的检测方式可以检测微型发光二极管的电学特性、光学特性等是否符合规定。若微型发光二极管的电学特性或者光学特性合格则确认该微型发光二极管为合格的微型发光二极管。如果微型发光二极管的电学特性或者光学特性不合格则确认该微型发光二极管为不合格的微型发光二极管\n\n[0078]（2）若所述微型发光二极管不合格，将不合格的微型发光二极管通过微型发光二极管转移装置转移到存储区域中。\n\n[0079]需要说明的是，存储区域可以是一个用来存储不合格微型发光二极管的存储装置，也可以是存储在收集管内。如果，不合格的微型发光二极管存储在收集管内，则需要对不合格的微型发光二极管做出标记。从而确保不合格的微型发光二极管不会转移到目标基板上。可以理解的是，本申请实施例中所述的标记可以是处理器中的一种处理方式。\n\n[0080]通过本申请实施例中对微型发光二极管的检测，可以确保将合格的微型发光二极管转移到目标基板上，从而确保转移到目标基板的微型发光二极管是可用的，这样可以提高显示装置的效果。\n\n[0081]由于采用本申请微型发光二极管转移方法，可以对不同区域的微型发光二极管进行拾取，有效提高转移速度，并且，可对微型发光二极管单独进行拾取，或直接释放至目标基板。进一步提高微型发光二极管在转移过程中的便利性，使得微型发光二极管技术更加适合量产。\n\n[0082]请参阅图6，图6是本申请实施例提供的显示装置100的结构示意图。其中，显示装置100包括基板102和微型发光二极管层101，所述微型发光二极管层101是采用上述微型发光二极管20转移方法转移的，上述实施例中微型发光二极管20转移方法已经详细描述，本申请实施例中不在过多赘述。\n\n[0083]由于本申请实施例采用上述实施例中的微型发光二极管20转移方法，因此，本申请的显示装置100制造速度非常快，适合量产。\n\n[0084]以上对本申请实施例提供的微型发光二极管转移装置、转移方法及显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10747, 23801, '【技术领域】\n\n[0001]本发明涉及显示技术领域，特别是涉及一种显示模组及其制备方法及电子装置。\n\n【背景技术】\n\n[0002]相比于液晶显示面板和有机发光二极管(OLED)显示面板，微型发光二极管(Mini/Micro-LED)显示面板由于具有色彩还原性强、宽视角、高刷新率、高对比度、高稳定性、低功耗、高灰度等优势，成为下一代主流的显示技术。\n\n[0003]目前将微型发光二极管(Mini/Micro-LED)显示面板沿弯折区域进行弯曲，以将绑定区域弯折到显示区的背面，得到显示模组，但是现有的显示面板在弯曲过程中，由于所受应力较大，容易损坏显示区域，从而降低了产品良率。\n\n[0004]因此，有必要提供一种显示模组及其制备方法及电子装置，以解决现有技术所存在的问题。\n\n【发明内容】\n\n[0005]本发明的目的在于提供一种显示模组及其制备方法及电子装置，能够减避免显示区域受损，提高了产品良率。\n\n[0006]为解决上述技术问题，本发明提供一种显示面板，包括：\n\n[0007]支撑体；\n\n[0008]显示面板，所述显示面板的截面结构包括：\n\n[0009]弯曲的柔性驱动基板，其包括显示区域、弯曲区域以及绑定区域；其中所述弯曲的柔性驱动基板具有一腔体；\n\n[0010]显示单元，绑定在所述显示区域内；所述显示单元包括多个微型发光二极管；\n\n[0011]其中所述支撑体设于所述腔体内，所述支撑体的纵向截面的形状为圆角矩形。\n\n[0012]本发明还提供一种显示模组的制备方法，其包括：\n\n[0013]在玻璃基板上制备柔性驱动基板；\n\n[0014]将微型发光二极管芯片转移至所述柔性驱动基板上，并对其进行封装，得到显示面板；所述微型发光二极管芯片包括多个微型发光二极管；\n\n[0015]将覆晶薄膜绑定在所述显示面板的绑定区域内；\n\n[0016]在所述显示面板上设置柔性保护膜；\n\n[0017]去除所述柔性驱动基板下方的玻璃基板；\n\n[0018]在位于显示区域的显示面板中远离微型发光二极管芯片的一侧贴合支撑体；所述支撑体的纵向截面的形状为圆角矩形；\n\n[0019]将所述显示面板的弯曲区域弯曲，并将显示面板与所述支撑体进行贴合。本发明还提供一种电子装置，其包括上述显示模组。\n\n[0020]本发明的显示模组及其制备方法及电子装置，包括支撑体；显示面板，所述显示面板的截面结构包括：弯曲的柔性驱动基板，其包括显示区域、弯曲区域以及绑定区域；其中所述弯曲的柔性驱动基板具有一腔体；显示单元，绑定在所述显示区域内；所述显示单元包括多个微型发光二极管；其中所述支撑体设于所述腔体内，所述支撑体的纵向截面的形状为圆角矩形；由于采用圆角矩形的支撑体，避免弯折区域所受应力较大，从而避免损坏显示区域，进而提高了产品良率。\n\n【附图说明】\n\n[0021]图1为本发明显示模组的制作方法第一步的结构示意图；\n\n[0022]图2为本发明显示模组的制作方法第二步的结构示意图；\n\n[0023]图3为本发明显示模组的制作方法第三步的结构示意图；\n\n[0024]图4为本发明显示模组的制作方法第四步的结构示意图；\n\n[0025]图5为本发明显示模组的制作方法第五步的结构示意图；\n\n[0026]图6为本发明显示模组的制作方法第六步的结构示意图；\n\n[0027]图7为本发明显示模组的制作方法第七步的结构示意图；\n\n[0028]图8为本发明支撑体的结构示意图；\n\n[0029]图9为本发明显示装置的结构示意图。\n\n【具体实施方式】\n\n[0030]以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。\n\n[0031]本申请的说明书和权利要求书及上述附图中的术语“第一”、“第二”等是用于区别不同对象，而不是用于描述特定顺序。此外，术语“包括”和“具有”以及它们任何变形，意图在于覆盖不排他的包含。\n\n[0032]请参照图1至图9，图1为本发明显示模组的制作方法第一步的结构示意图。\n\n[0033]在一种实施例中，本发明提供一种显示模组的制备方法，包括：\n\n[0034]S101、在玻璃基板上制备柔性驱动基板；\n\n[0035]例如，如图1所示，在玻璃基板11上制备柔性驱动基板12，其中柔性驱动基板12包括柔性衬底以及设于柔性衬底上的驱动层。柔性衬底是通过柔性材料制备形成的可弯曲的衬底基板，具有可伸展、可弯曲或可弯曲等特性，其材料可以包括但不限于聚酰亚胺(Polyimide，PI)、聚对苯二甲酸乙二醇酯(Polyethylene Terephthalate，PET)以及聚碳酸酯(Polycarbonate，PC)，还可以是其他柔性材料，在此不做限制。柔性衬底的厚度可以根据经验值设定。驱动层可以包括多个薄膜晶体管，驱动层的截面结构包括有源层、栅极层、源漏极层、设置在有源层和栅极层之间的栅极绝缘层以及设置在栅极与源漏极层之间的层间绝缘层。在本实施例中，薄膜晶体管可以为顶栅结构的薄膜晶体管、底栅结构的薄膜晶体管、单栅极结构薄膜晶体管、双栅极结构薄膜晶体管中的一种，在此不做限定。\n\n[0036]S102、将微型发光二极管(Mini/Micro-LED)芯片转移至所述柔性驱动基板上，并对其进行封装，得到显示面板；\n\n[0037]如图2所示，微型发光二极管(Mini/Micro-LED)芯片13包括多个微型发光二极管131，其中将微型发光二极管(Mini/Micro-LED)芯片13转移至所述柔性驱动基板12上，对其精密封装获得柔性微型发光二极管显示面板。微型发光二极管(Mini/Micro-LED)芯片13与所述柔性驱动基板12进行电性连接。\n\n[0038]在一实施方式中，可采用封装膜14对所述微型发光二极管芯片13进行封装。该封装膜14的平整度范围须达到±10μm。\n\n[0039]S103、将覆晶薄膜绑定在显示面板的绑定区域内；\n\n[0040]如图3所示，将覆晶薄膜15绑定在显示面板的绑定区域103内。\n\n[0041]S104、在显示面板上设置柔性保护膜；\n\n[0042]如图4所示，通过使用柔性保护膜16对外引脚接合(OLB)区进行保护，且柔性保护膜16能够对下方的柔性驱动基板12进行支撑。\n\n[0043]S105、去除显示面板的柔性驱动基板下的玻璃基板；\n\n[0044]如图5所示，在一实施方式中，通过激光整面剥离工艺(LLO，Laser lift off)去除玻璃基板11，此外还可通过激光切割工艺将与覆晶薄膜相邻的柔性驱动基板12切除一部分，也即将位于两端的柔性驱动基板12切除掉一部分，使得柔性驱动基板12的宽度变窄。\n\n[0045]S106、在位于显示区域的显示面板中远离微型发光二极管芯片13的一侧贴合支撑体；\n\n[0046]如图6所示，在显示区域101的柔性驱动基板12的下表面涂布胶体，在支撑体20的上表面涂布胶体，然后将支撑体20的上表面和柔性驱动基板12的下表面贴合在一起，该胶体可以为光学胶(Optically Clear Adhesive，OCA)。其中所述支撑体20的纵向截面的形状为圆角矩形。\n\n[0047]S107、将显示面板的弯曲区域弯曲，并将显示面板与支撑体进行贴合。\n\n[0048]如图7所示，通过垫弯(pad bending)工艺对弯折区域102进行弯折，使得绑定区域103弯曲至支撑体20的下方，然后将弯折的柔性驱动基板12与支撑体20贴合固定，获得显示模组。绑定区域103中的覆晶薄膜15还与驱动电路板连接，驱动电路板上设置有驱动芯片。贴合方式可以采用双面胶带或胶水进行贴合。\n\n[0049]如图7所示，本发明还提供一种显示模组，其包括：显示面板10和支撑体20。\n\n[0050]所述显示面板10的截面结构包括：弯曲的柔性驱动基板12和显示单元30。所述柔性驱动基板12可包括柔性衬底和设于所述柔性衬底上的驱动层。\n\n[0051]弯曲的柔性驱动基板12包括显示区域101、弯曲区域102以及绑定区域103；其中弯曲的柔性驱动基板12具有一腔体；当所述绑定区域103通过弯曲区域102从所述支撑体20的第一侧弯曲至所述支撑体20的第二侧形成该腔体。也即所述绑定区域103通过弯曲区域102从所述支撑体20的上表面弯曲至所述支撑体20的下表面形成该腔体。\n\n[0052]显示单元30绑定在所述显示区域101内；所述显示单元30包括多个微型发光二极管131；在一实施方式中，显示单元30还包括封装层14，封装层14覆盖多个微型发光二极管131，用于保护微型发光二极管131，封装层14可为无机层和有机层的交替层。所述支撑体20设于所述腔体内，所述支撑体20的纵向截面的形状为圆角矩形。在一实施方式中，为了避免拼接缝超过显示区域，所述支撑体20的尺寸小于所述显示区域101的尺寸。\n\n[0053]为了提高显示模组的稳定性，所述支撑体20与所述腔体20的内侧壁贴合。在一实施方式中，所述显示区域101与所述支撑体20的第一侧(上侧)的表面贴合；所述弯折区域102与所述支撑体20的侧壁贴合；所述绑定区域103与所述支撑体20的第二侧(下侧)的表面贴合。\n\n[0054]如图8所示，所述支撑体20包括支撑板21，还可包括散热层22。为了便于显示模组进行散热，所述散热层23的材料可为铜。支撑板21的材料为玻璃、聚酰亚胺、聚对苯二甲酸乙二醇酯或聚合氯化铝中的一种。其中所述支撑板21的厚度小于预设厚度，预设厚度比如为500um，从而可以减小支撑体的厚度。\n\n[0055]如图9所示，本发明还提供一种显示装置，包括：两个上述显示模组10，且两个显示模组彼此拼接在一起组成显示装置。可以理解的显示模组的数量可以为两个以上。\n\n[0056]其中所述显示装置还可包括背板(图中未示出)，所述背板具有一容纳腔；至少两个所述显示模组10在所述容纳腔内拼接。\n\n[0057]由于本发明采用圆角矩形的支撑体，不仅实现了极窄边框的显示模组，而且能够使得弯折区域平滑过渡，避免弯折区域所受应力较大而影响损坏显示区域，提高了产品良率。\n\n[0058]本发明的显示模组及其制备方法及电子装置，包括支撑体；显示面板，所述显示面板的截面结构包括：弯曲的柔性驱动基板，其包括显示区域、弯曲区域以及绑定区域；其中所述弯曲的柔性驱动基板具有一腔体；显示单元，绑定在所述显示区域内；所述显示单元包括多个微型发光二极管；其中所述支撑体设于所述腔体内，所述支撑体的纵向截面的形状为圆角矩形；由于采用圆角矩形的支撑体，避免弯折区域所受应力较大，从而避免损坏显示区域，进而提高了产品良率。\n\n[0059]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '【技术领域】\n\n[0001]本发明涉及显示技术领域，特别是涉及一种显示模组及其制备方法及电子装置。\n\n【背景技术】\n\n[0002]相比于液晶显示面板和有机发光二极管(OLED)显示面板，微型发光二极管(Mini/Micro-LED)显示面板由于具有色彩还原性强、宽视角、高刷新率、高对比度、高稳定性、低功耗、高灰度等优势，成为下一代主流的显示技术。\n\n[0003]目前将微型发光二极管(Mini/Micro-LED)显示面板沿弯折区域进行弯曲，以将绑定区域弯折到显示区的背面，得到显示模组，但是现有的显示面板在弯曲过程中，由于所受应力较大，容易损坏显示区域，从而降低了产品良率。\n\n[0004]因此，有必要提供一种显示模组及其制备方法及电子装置，以解决现有技术所存在的问题。\n\n【发明内容】\n\n[0005]本发明的目的在于提供一种显示模组及其制备方法及电子装置，能够减避免显示区域受损，提高了产品良率。\n\n[0006]为解决上述技术问题，本发明提供一种显示面板，包括：\n\n[0007]支撑体；\n\n[0008]显示面板，所述显示面板的截面结构包括：\n\n[0009]弯曲的柔性驱动基板，其包括显示区域、弯曲区域以及绑定区域；其中所述弯曲的柔性驱动基板具有一腔体；\n\n[0010]显示单元，绑定在所述显示区域内；所述显示单元包括多个微型发光二极管；\n\n[0011]其中所述支撑体设于所述腔体内，所述支撑体的纵向截面的形状为圆角矩形。\n\n[0012]本发明还提供一种显示模组的制备方法，其包括：\n\n[0013]在玻璃基板上制备柔性驱动基板；\n\n[0014]将微型发光二极管芯片转移至所述柔性驱动基板上，并对其进行封装，得到显示面板；所述微型发光二极管芯片包括多个微型发光二极管；\n\n[0015]将覆晶薄膜绑定在所述显示面板的绑定区域内；\n\n[0016]在所述显示面板上设置柔性保护膜；\n\n[0017]去除所述柔性驱动基板下方的玻璃基板；\n\n[0018]在位于显示区域的显示面板中远离微型发光二极管芯片的一侧贴合支撑体；所述支撑体的纵向截面的形状为圆角矩形；\n\n[0019]将所述显示面板的弯曲区域弯曲，并将显示面板与所述支撑体进行贴合。本发明还提供一种电子装置，其包括上述显示模组。\n\n[0020]本发明的显示模组及其制备方法及电子装置，包括支撑体；显示面板，所述显示面板的截面结构包括：弯曲的柔性驱动基板，其包括显示区域、弯曲区域以及绑定区域；其中所述弯曲的柔性驱动基板具有一腔体；显示单元，绑定在所述显示区域内；所述显示单元包括多个微型发光二极管；其中所述支撑体设于所述腔体内，所述支撑体的纵向截面的形状为圆角矩形；由于采用圆角矩形的支撑体，避免弯折区域所受应力较大，从而避免损坏显示区域，进而提高了产品良率。\n\n【附图说明】\n\n[0021]图1为本发明显示模组的制作方法第一步的结构示意图；\n\n[0022]图2为本发明显示模组的制作方法第二步的结构示意图；\n\n[0023]图3为本发明显示模组的制作方法第三步的结构示意图；\n\n[0024]图4为本发明显示模组的制作方法第四步的结构示意图；\n\n[0025]图5为本发明显示模组的制作方法第五步的结构示意图；\n\n[0026]图6为本发明显示模组的制作方法第六步的结构示意图；\n\n[0027]图7为本发明显示模组的制作方法第七步的结构示意图；\n\n[0028]图8为本发明支撑体的结构示意图；\n\n[0029]图9为本发明显示装置的结构示意图。\n\n【具体实施方式】\n\n[0030]以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。\n\n[0031]本申请的说明书和权利要求书及上述附图中的术语“第一”、“第二”等是用于区别不同对象，而不是用于描述特定顺序。此外，术语“包括”和“具有”以及它们任何变形，意图在于覆盖不排他的包含。\n\n[0032]请参照图1至图9，图1为本发明显示模组的制作方法第一步的结构示意图。\n\n[0033]在一种实施例中，本发明提供一种显示模组的制备方法，包括：\n\n[0034]S101、在玻璃基板上制备柔性驱动基板；\n\n[0035]例如，如图1所示，在玻璃基板11上制备柔性驱动基板12，其中柔性驱动基板12包括柔性衬底以及设于柔性衬底上的驱动层。柔性衬底是通过柔性材料制备形成的可弯曲的衬底基板，具有可伸展、可弯曲或可弯曲等特性，其材料可以包括但不限于聚酰亚胺(Polyimide，PI)、聚对苯二甲酸乙二醇酯(Polyethylene Terephthalate，PET)以及聚碳酸酯(Polycarbonate，PC)，还可以是其他柔性材料，在此不做限制。柔性衬底的厚度可以根据经验值设定。驱动层可以包括多个薄膜晶体管，驱动层的截面结构包括有源层、栅极层、源漏极层、设置在有源层和栅极层之间的栅极绝缘层以及设置在栅极与源漏极层之间的层间绝缘层。在本实施例中，薄膜晶体管可以为顶栅结构的薄膜晶体管、底栅结构的薄膜晶体管、单栅极结构薄膜晶体管、双栅极结构薄膜晶体管中的一种，在此不做限定。\n\n[0036]S102、将微型发光二极管(Mini/Micro-LED)芯片转移至所述柔性驱动基板上，并对其进行封装，得到显示面板；\n\n[0037]如图2所示，微型发光二极管(Mini/Micro-LED)芯片13包括多个微型发光二极管131，其中将微型发光二极管(Mini/Micro-LED)芯片13转移至所述柔性驱动基板12上，对其精密封装获得柔性微型发光二极管显示面板。微型发光二极管(Mini/Micro-LED)芯片13与所述柔性驱动基板12进行电性连接。\n\n[0038]在一实施方式中，可采用封装膜14对所述微型发光二极管芯片13进行封装。该封装膜14的平整度范围须达到±10μm。\n\n[0039]S103、将覆晶薄膜绑定在显示面板的绑定区域内；\n\n[0040]如图3所示，将覆晶薄膜15绑定在显示面板的绑定区域103内。\n\n[0041]S104、在显示面板上设置柔性保护膜；\n\n[0042]如图4所示，通过使用柔性保护膜16对外引脚接合(OLB)区进行保护，且柔性保护膜16能够对下方的柔性驱动基板12进行支撑。\n\n[0043]S105、去除显示面板的柔性驱动基板下的玻璃基板；\n\n[0044]如图5所示，在一实施方式中，通过激光整面剥离工艺(LLO，Laser lift off)去除玻璃基板11，此外还可通过激光切割工艺将与覆晶薄膜相邻的柔性驱动基板12切除一部分，也即将位于两端的柔性驱动基板12切除掉一部分，使得柔性驱动基板12的宽度变窄。\n\n[0045]S106、在位于显示区域的显示面板中远离微型发光二极管芯片13的一侧贴合支撑体；\n\n[0046]如图6所示，在显示区域101的柔性驱动基板12的下表面涂布胶体，在支撑体20的上表面涂布胶体，然后将支撑体20的上表面和柔性驱动基板12的下表面贴合在一起，该胶体可以为光学胶(Optically Clear Adhesive，OCA)。其中所述支撑体20的纵向截面的形状为圆角矩形。\n\n[0047]S107、将显示面板的弯曲区域弯曲，并将显示面板与支撑体进行贴合。\n\n[0048]如图7所示，通过垫弯(pad bending)工艺对弯折区域102进行弯折，使得绑定区域103弯曲至支撑体20的下方，然后将弯折的柔性驱动基板12与支撑体20贴合固定，获得显示模组。绑定区域103中的覆晶薄膜15还与驱动电路板连接，驱动电路板上设置有驱动芯片。贴合方式可以采用双面胶带或胶水进行贴合。\n\n[0049]如图7所示，本发明还提供一种显示模组，其包括：显示面板10和支撑体20。\n\n[0050]所述显示面板10的截面结构包括：弯曲的柔性驱动基板12和显示单元30。所述柔性驱动基板12可包括柔性衬底和设于所述柔性衬底上的驱动层。\n\n[0051]弯曲的柔性驱动基板12包括显示区域101、弯曲区域102以及绑定区域103；其中弯曲的柔性驱动基板12具有一腔体；当所述绑定区域103通过弯曲区域102从所述支撑体20的第一侧弯曲至所述支撑体20的第二侧形成该腔体。也即所述绑定区域103通过弯曲区域102从所述支撑体20的上表面弯曲至所述支撑体20的下表面形成该腔体。\n\n[0052]显示单元30绑定在所述显示区域101内；所述显示单元30包括多个微型发光二极管131；在一实施方式中，显示单元30还包括封装层14，封装层14覆盖多个微型发光二极管131，用于保护微型发光二极管131，封装层14可为无机层和有机层的交替层。所述支撑体20设于所述腔体内，所述支撑体20的纵向截面的形状为圆角矩形。在一实施方式中，为了避免拼接缝超过显示区域，所述支撑体20的尺寸小于所述显示区域101的尺寸。\n\n[0053]为了提高显示模组的稳定性，所述支撑体20与所述腔体20的内侧壁贴合。在一实施方式中，所述显示区域101与所述支撑体20的第一侧(上侧)的表面贴合；所述弯折区域102与所述支撑体20的侧壁贴合；所述绑定区域103与所述支撑体20的第二侧(下侧)的表面贴合。\n\n[0054]如图8所示，所述支撑体20包括支撑板21，还可包括散热层22。为了便于显示模组进行散热，所述散热层23的材料可为铜。支撑板21的材料为玻璃、聚酰亚胺、聚对苯二甲酸乙二醇酯或聚合氯化铝中的一种。其中所述支撑板21的厚度小于预设厚度，预设厚度比如为500um，从而可以减小支撑体的厚度。\n\n[0055]如图9所示，本发明还提供一种显示装置，包括：两个上述显示模组10，且两个显示模组彼此拼接在一起组成显示装置。可以理解的显示模组的数量可以为两个以上。\n\n[0056]其中所述显示装置还可包括背板(图中未示出)，所述背板具有一容纳腔；至少两个所述显示模组10在所述容纳腔内拼接。\n\n[0057]由于本发明采用圆角矩形的支撑体，不仅实现了极窄边框的显示模组，而且能够使得弯折区域平滑过渡，避免弯折区域所受应力较大而影响损坏显示区域，提高了产品良率。\n\n[0058]本发明的显示模组及其制备方法及电子装置，包括支撑体；显示面板，所述显示面板的截面结构包括：弯曲的柔性驱动基板，其包括显示区域、弯曲区域以及绑定区域；其中所述弯曲的柔性驱动基板具有一腔体；显示单元，绑定在所述显示区域内；所述显示单元包括多个微型发光二极管；其中所述支撑体设于所述腔体内，所述支撑体的纵向截面的形状为圆角矩形；由于采用圆角矩形的支撑体，避免弯折区域所受应力较大，从而避免损坏显示区域，进而提高了产品良率。\n\n[0059]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10748, 23802, '技术领域\n\n[0001]本发明涉及显示器件领域，特别是一种背光模组及显示装置。\n\n背景技术\n\n[0002]随着科技的发展和社会的进步，人们对于信息交流和传递等方面的依赖程度日益增加。而显示器件作为信息交换和传递的主要载体和物质基础，现已成为众多从事信息光电研究科学家争相抢占的热点和高地。对于现实画面的品质要求在逐步的提升中，其中对高背光的需求越来越高。\n\n[0003]液晶显示屏主要由液晶盒(LCD)和背光(BLU)组成。背光是液晶显示屏的重要组成部分。LCD为非主动发光显示模式，而是通过背光为其提供显示光源。故背光的光学特性，与整个液晶显示屏的显示特性息息相关。\n\n[0004]LCD中使用的背光，目前最常见的是使用LED灯珠光源，借由导光板，扩散片，反射片，棱镜片等膜片，得到相对均匀分布的面光源。目前新兴的mini LED背光，其与前者相比，可以得到更加均匀分布的面光源，视角更大，且可以实现超黑暗态，得到更佳的现实效果。但是目前其光利用率还没有达到最佳，在扩散片上存在往下反射损失光线，没有很好的利用mini LED发出的光线。\n\n[0005]如图1所示，在现有的mini LED背光背板设计中，主要分为无金属覆盖区40以及单层金属覆盖区50。如图2所示，在无金属覆盖区40，扩散板60反射往下的光利用不佳，通过模拟计算(以蓝色光为例，目前较多采用蓝色mini LED)可以得到两种区域的反射效果不同，在无金属覆盖区40，其反射率仅为22％左右。而在单层金属覆盖区50，其反射也较低，仅有61％左右。\n\n发明内容\n\n[0006]本发明的目的是提供一种背光模组及显示装置，以解决现有技术中Mini-LED背光模组中光源反射率不高等问题。\n\n[0007]为实现上述目的，本发明提供一种背光模组，所述背光模组中包括基板、Mini-LED以及至少一导电发光层。所述基板包括发光区和围绕发光区的非发光区。所述Mini-LED设于所述基板的所述发光区。所述导电反光层覆盖整个所述非发光区，所述Mini-LED电连接至一导电反光层。\n\n[0008]进一步地，所述导电反光层包括第一导电反光层、透明绝缘层以及第二导电发光层。所述第一导电反光层设于所述基板上。所述透明绝缘层设于所述第一导电反光层上。所述第二导电反光层设于所述透明绝缘层上。所述Mini-LED电连接至所述第一导电反光层和/或第二导电反光层。\n\n[0009]进一步地，所述背光模组还具有至少一开槽，所述开槽设于所述第二导电反光层上，所述Mini-LED对应于所述开槽并与所述第一导电反光层电连接。\n\n[0010]进一步地，所述第二导电反光层中具有至少一第一反光走线和至少一相互平行的第二反光走线。所述第二反光走线的宽度与小于所述第一反光走线的宽度。所述第一反光走线之间或者所述第二反光走线之间或者一第一反光走线和一第二反光走线之间具有第一间隙，所述开槽对应于所述第一反光走线和与之相邻的第一间隙中。\n\n[0011]进一步地，所述第二导电反光层中具有至少两条相互平行的第三反光走线，每一开槽对应于其中一第三反光走线上。\n\n[0012]进一步地，所述第一导电反光层中具有至少两条互相平行的第四反光走线。相邻的两条第四反光走线之间具有一第二间隙，所述第二间隙对应于一条第一反光走线、一条第二反光走线和一条第三反光走线中的一种或两种。\n\n[0013]进一步地，所述第一间隙的宽度小于所述第四反光走线的宽度。所述第二间隙的宽度小于所述第二反光走线或第三反光走线的宽度。\n\n[0014]进一步地，相邻的两条第三反光走线之间具有一第三间隙，所述第三间隙对应于一条第四反光走线。\n\n[0015]进一步地，所述第三间隙的宽度小于所述第四反光走线的宽度。\n\n[0016]进一步地，所述第一导电反光层中具有至少两条相互平行的第五反光走线，相邻两条第五反光走线之间具有一第四间隙，所述第二导电反光层中具有至少两条相互平行的第六反光走线，所述第四间隙对应于其中一第六反光走线。\n\n[0017]进一步地，相邻的两条第六反光走线之间具有一第五间隙，所述第五间隙对应于其中一条第五反光走线。\n\n[0018]进一步地，所述第四间隙的宽度小于所述第六反光走线的宽度。所述第五间隙的宽度小于所述第五反光走线的宽度。\n\n[0019]本发明中还提供一种显示装置，所述显示装置包括如上所述的背光模组。\n\n[0020]本发明的优点是：本发明的一种背光模组及显示装置，其通过减少无金属区域的面积，通过两层金属走线的覆盖从而提高金属的覆盖面积，从而提高背光模组中光线的反射率，降低光源损失率更低，提高光源利用率。在相同亮度需求的情况下，其可以减少Mini-LED的数量，节省制造成本以及减少显示装置所需的电能，从而节约能源。\n\n附图说明\n\n[0021]图1为现有技术中背光模组的俯视图图；\n\n[0022]图2为现有技术中背光模组的层状结构示意图；\n\n[0023]图3为本发明实施例1中背光模组的层状结构示意图；\n\n[0024]图4为本发明实施例1中背光模组的俯视图；\n\n[0025]图5为本发明实施例2中背光模组的层状结构示意图；\n\n[0026]图6为本发明实施例2中背光模组的俯视图；\n\n[0027]图7为本发明实施例3中背光模组的层状结构示意图；\n\n[0028]图8为本发明实施例3中背光模组的俯视图。\n\n[0029]图中部件表示如下：\n\n[0030]背光模组1；\n\n[0031]基板10；发光区11；\n\n[0032]非发光区12；Mini-LED 20；\n\n[0033]导电反光层30；透明绝缘层31；\n\n[0034]第一导电反光层32；\n\n[0035]第四反光走线321；第二间隙322；\n\n[0036]第五反光走线323；第四间隙324；\n\n[0037]第二导电反光层33；\n\n[0038]第一反光走线331；第二反光走线332；第一间隙333；\n\n[0039]第三反光走线334；第三间隙335；\n\n[0040]第六反光走线336；第五间隙337；\n\n[0041]开槽338；\n\n[0042]无金属覆盖区40；单层金属覆盖区50；\n\n[0043]扩散板60。\n\n具体实施方式\n\n[0044]以下参考说明书附图介绍本发明的优选实施例，证明本发明可以实施，所述发明实施例可以向本领域中的技术人员完整介绍本发明，使其技术内容更加清楚和便于理解。本发明可以通过许多不同形式的发明实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例。\n\n[0045]在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。附图所示的每一部件的尺寸和厚度是任意示出的，本发明并没有限定每个组件的尺寸和厚度。为了使图示更清晰，附图中有些地方适当夸大了部件的厚度。\n\n[0046]此外，以下各发明实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定发明实施例。本发明中所提到的方向用语，例如，“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”、“侧面”等，仅是参考附加图式的方向，因此，使用的方向用语是为了更好、更清楚地说明及理解本发明，而不是指示或暗指所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”、“第三”等仅用于描述目的，而不能理解为指示或暗示相对重要性。\n\n[0047]当某些部件被描述为“在”另一部件“上”时，所述部件可以直接置于所述另一部件上；也可以存在一中间部件，所述部件置于所述中间部件上，且所述中间部件置于另一部件上。当一个部件被描述为“安装至”或“连接至”另一部件时，二者可以理解为直接“安装”或“连接”，或者一个部件通过一中间部件间接“安装至”、或“连接至”另一个部件。\n\n[0048]实施例1\n\n[0049]本发明实施例中提供了一种显示装置，所述显示装置中具有一背光模组1，所述显示装置为液晶显示装置，由于液晶显示装置的中的液晶层为被动发光元件，其需通过所述背光模组1为其提供背光源，从而实现画面的显示。本发明实施例中所提供的显示装置可以为笔记本电脑、手机、平板电脑、电视机等具有画面显示功能的装置。\n\n[0050]如图3所示，所述背光模组1中包括一基板10、若干Mini-LED 20以及导电反光层30。\n\n[0051]所述基板10为透明绝缘基板，例如玻璃基板、石英基板等。所述基板10用于保护所述显示面板的整体架构。\n\n[0052]所述基板10包括发光区11以及围绕所述发光区11的非发光区12，所述Mini-LED20设于所述发光区11内。所述Mini-LED 20用于提供背光光源。\n\n[0053]所述导电反光层30设于所述基板10上。所述导电反光层30中包括一第一导电反光层32、一透明绝缘层31以及一第二导电反光层33。其中，所述第一导电反光层32和所述第二导电反光层33均为金属，所述Mini-LED 20电连接至所述第一导电反光层32。\n\n[0054]所述第一导电反光层32设于所述基板10上，并覆盖在整个基板10上。所述Mini-LED 20设于所述第一导电反光层32上，并与所述第一导电反光层32电连接，所述第一导电反光层32为所述Mini-LED 20传输电源，促使所述Mini-LED 20可以发光。同时，所述第一导电反光层32还可以为Mini-LED 20反光，提高光线的利用率。\n\n[0055]所述第二导电反光层33绝缘设于所述第一导电反光层32远离所述基板10的一表面上，并覆盖所述非发光区12。所述第二导电反光层33用于反射从所述Mini-LED 20所发出的光线。所述第二导电反光层33中具有一开槽338，所述开槽338贯穿所述第二导电反光层33并对应于所述Mini-LED 20。所述开槽338为所述Mini-LED 20提供发光通道。\n\n[0056]所述透明绝缘层31设于所述第一导电反光层32与所述第二导电反光层33之间，其用于件所述第一导电反光层32与所述第二导电反光层33绝缘设置，防止发生短路现象。\n\n[0057]如图4所示，在所述第二导电反光层33中具有若干第一反光走线331以及若干第二反光走线332。所述第一反光走线331与所述第二反光走线332交错设置，并且互相平行。其中，所述第二反光走线332的宽度小于所述第一反光走线331的宽度。在所述第一反光走线331和所述第二反光走线332之间具有一第一间隙333，所述开槽338对应于所述第一反光走线331和与之相邻的第一间隙333中。\n\n[0058]在所述第一导电反光层32中，其具有若干第四反光走线321，所述第四反光走线321排布于所述基板10上。相邻的两条第四反光走线321之间互相平行，并且还具有一第二间隙322。所述Mini-LED 20设于部分第四反光走线321上。\n\n[0059]所述第一间隙333对应于所述第四反光走线321，所述第二间隙322对应于所述第一反光走线331或第二反光走线332。并且所述第一间隙333的宽度小于第二反光走线332的宽度，所述第二间隙322的宽度小于所述第二反光走线332的宽度，从而可以实现金属全覆盖。当Mini-LED 20通电发光时，其大部分光线可以通过开槽338发射出去，还有小部分通过第四反光走线321，即第一导电反光层32的反射穿过所述第一间隙333或开槽338再次发射出去。而第一反光走线331和第二反光走线332，即第二导电反光层33用于将被背光模组1中其他光学膜片层反射回来的光线再次反射回去。\n\n[0060]本发明实施例中所提供的一种背光模组及显示装置，其通过减少无金属区域的面积，通过两层金属走线的覆盖从而提高金属的覆盖面积，从而提高背光模组中光线的反射率，根据模拟计算可以，双层金属覆盖的光线反射率从可以达到70％甚至更高。本发明实施例中所公开的背光模组，其反射率与现有技术相比较更高，光源损失率更低，在相同亮度需求的情况下，其可以减少Mini-LED的数量，节省制造成本以及减少显示装置所需的电能，从而节约能源。\n\n[0061]实施例2\n\n[0062]本发明实施例中提供了一种显示装置，所述显示装置中具有一背光模组1，所述显示装置为液晶显示装置，由于液晶显示装置的中的液晶层为被动发光元件，其需通过所述背光模组1为其提供背光源，从而实现画面的显示。本发明实施例中所提供的显示装置可以为笔记本电脑、手机、平板电脑、电视机等具有画面显示功能的装置。\n\n[0063]如图5所示，所述背光模组1中包括一基板10、若干Mini-LED 20以及导电反光层30。\n\n[0064]所述基板10为透明绝缘基板，例如玻璃基板、石英基板等。所述基板10用于保护所述显示面板的整体架构。\n\n[0065]所述基板10包括发光区11以及围绕所述发光区11的非发光区12，所述Mini-LED20设于所述发光区11内。所述Mini-LED 20用于提供背光光源。\n\n[0066]所述导电反光层30设于所述基板10上。所述导电反光层30中包括一第一导电反光层32、一透明绝缘层31以及一第二导电反光层33。其中，所述第一导电反光层32和所述第二导电反光层33均为金属，所述Mini-LED 20电连接至所述第一导电反光层32。\n\n[0067]所述第一导电反光层32设于所述基板10上，并覆盖在整个基板10上。所述Mini-LED 20设于所述第一导电反光层32上，并与所述第一导电反光层32电连接，所述第一导电反光层32为所述Mini-LED 20传输电源，促使所述Mini-LED 20可以发光。同时，所述第一导电反光层32还可以为Mini-LED 20反光，提高光线的利用率。\n\n[0068]所述第二导电反光层33绝缘设于所述第一导电反光层32远离所述基板10的一表面上，并覆盖所述非发光区12。所述第二导电反光层33用于反射从所述Mini-LED 20所发出的光线。所述第二导电反光层33中具有一开槽338，所述开槽338贯穿所述第二导电反光层33并对应于所述Mini-LED 20。所述开槽338为所述Mini-LED 20提供发光通道。\n\n[0069]所述透明绝缘层31设于所述第一导电反光层32与所述第二导电反光层33之间，其用于件所述第一导电反光层32与所述第二导电反光层33绝缘设置，防止发生短路现象。\n\n[0070]如图6所示，在所述第二导电反光层33中具有若干第三反光走线334。相邻的两条第三反光走线334之间互相平行，并且其之间具有一第三间隙335。所述开槽338对应于设于所述第三反光走线334上。\n\n[0071]在所述第一导电反光层32中，其具有若干第四反光走线321，所述第四反光走线321排布于所述基板10上。相邻的两条第四反光走线321之间互相平行，并且还具有一第二间隙322。所述Mini-LED 20设于部分第四反光走线321上。\n\n[0072]所述第二间隙322对应于所述第三反光走线334，所述第三间隙335对应于所述第四反光走线321。并且所述第二间隙322的宽度小于第三反光走线334的宽度，所述第三间隙335的宽度小于所述第四反光走线321的宽度，从而可以实现金属全覆盖。当Mini-LED 20通电发光时，其大部分光线可以通过开槽338发射出去，还有小部分通过第四反光走线321，即第一导电反光层32的反射穿过所述第一间隙333或开槽338再次发射出去。而第三反光走线334，即第二导电反光层33用于将被背光模组1中其他光学膜片层反射回来的光线再次反射回去。\n\n[0073]本发明实施例中所提供的一种背光模组及显示装置，其通过减少无金属区域的面积，通过两层金属走线的覆盖从而提高金属的覆盖面积，从而提高背光模组中光线的反射率，根据模拟计算可知，双层金属覆盖的光线反射率从可以达到70％甚至更高。本发明实施例中所公开的背光模组，其反射率与现有技术相比较更高，光源损失率更低，在相同亮度需求的情况下，其可以减少Mini-LED的数量，节省制造成本以及减少显示装置所需的电能，从而节约能源。\n\n[0074]实施例3\n\n[0075]本发明实施例中提供了一种显示装置，所述显示装置中具有一背光模组1，所述显示装置为液晶显示装置，由于液晶显示装置的中的液晶层为被动发光元件，其需通过所述背光模组1为其提供背光源，从而实现画面的显示。本发明实施例中所提供的显示装置可以为笔记本电脑、手机、平板电脑、电视机等具有画面显示功能的装置。\n\n[0076]如图7所示，所述背光模组1中包括一基板10、若干Mini-LED 20以及导电反光层30。\n\n[0077]所述基板10为透明绝缘基板，例如玻璃基板、石英基板等。所述基板10用于保护所述显示面板的整体架构。\n\n[0078]所述基板10包括发光区11以及围绕所述发光区11的非发光区12，所述Mini-LED20设于所述发光区11内。所述Mini-LED 20用于提供背光光源。\n\n[0079]所述导电反光层30设于所述基板10上。所述导电反光层30中包括一第一导电反光层32、一透明绝缘层31以及一第二导电反光层33。其中，所述第一导电反光层32和所述第二导电反光层33均为金属，所述Mini-LED 20电连接至所述第二导电反光层33。\n\n[0080]所述第一导电反光层32设于所述基板10上，并覆盖在整个基板10上。所述第一导电反光层32用于反射从第二导电反光层33中漏出的光线。\n\n[0081]所述第二导电反光层33绝缘设于所述第一导电反光层32远离所述基板10的一表面上，并覆盖整个所述发光区11和所述非发光区12。所述Mini-LED 20设于所述第二导电反光层33上，并与所述第二导电反光层33电连接，所述第二导电反光层33为所述Mini-LED 20传输电源，促使所述Mini-LED 20可以发光。同时，所述第一导电反光层32还可以为Mini-LED 20反光，提高光线的利用率。\n\n[0082]所述透明绝缘层31设于所述第一导电反光层32与所述第二导电反光层33之间，其用于件所述第一导电反光层32与所述第二导电反光层33绝缘设置，防止发生短路现象。\n\n[0083]在所述第一导电反光层32中，其具有若干第五反光走线323，所述第五反光走线323排布于所述基板10上。相邻的两条第五反光走线323之间互相平行，并且还具有一第四间隙324。在所述第二导电反光层33中，其具有若干第六反光走线336，所述第六反光走线336排布在所述透明绝缘层31上，如图8所示，所述Mini-LED 20设于部分第六反光走线336上。相邻的两条第六反光走线336之间互相平行，并且其还具有一第五间隙337。\n\n[0084]所述第四间隙324对应于所述第六反光走线336，所述第五间隙337对应于所述第五反光走线323。并且所述第四间隙324的宽度小于第六反光走线336的宽度，所述第五间隙337的宽度小于所述第五反光走线323的宽度，从而可以实现金属全覆盖。当Mini-LED 20通电发光时，其部分通过第五间隙337穿过的光线可以通过第五反光走线323再次反射回来。\n\n[0085]本发明实施例中所提供的一种背光模组及显示装置，其通过减少无金属区域的面积，通过两层金属走线的覆盖从而提高金属的覆盖面积，从而提高背光模组中光线的反射率，根据模拟计算可知，双层金属覆盖的光线反射率从可以达到70％甚至更高。本发明实施例中所公开的背光模组，其反射率与现有技术相比较更高，光源损失率更低，在相同亮度需求的情况下，其可以减少Mini-LED的数量，节省制造成本以及减少显示装置所需的电能，从而节约能源。\n\n[0086]虽然在本文中参照了特定的实施方式来描述本发明，但是应该理解的是，这些实施例仅仅是本发明的原理和应用的示例。因此应该理解的是，可以对示例性的实施例进行许多修改，并且可以设计出其他的布置，只要不偏离所附权利要求所限定的本发明的精神和范围。应该理解的是，可以通过不同于原始权利要求所描述的方式来结合不同的从属权利要求和本文中所述的特征。还可以理解的是，结合单独实施例所描述的特征可以使用在其他所述实施例中。', '技术领域\n\n[0001]本发明涉及显示器件领域，特别是一种背光模组及显示装置。\n\n背景技术\n\n[0002]随着科技的发展和社会的进步，人们对于信息交流和传递等方面的依赖程度日益增加。而显示器件作为信息交换和传递的主要载体和物质基础，现已成为众多从事信息光电研究科学家争相抢占的热点和高地。对于现实画面的品质要求在逐步的提升中，其中对高背光的需求越来越高。\n\n[0003]液晶显示屏主要由液晶盒(LCD)和背光(BLU)组成。背光是液晶显示屏的重要组成部分。LCD为非主动发光显示模式，而是通过背光为其提供显示光源。故背光的光学特性，与整个液晶显示屏的显示特性息息相关。\n\n[0004]LCD中使用的背光，目前最常见的是使用LED灯珠光源，借由导光板，扩散片，反射片，棱镜片等膜片，得到相对均匀分布的面光源。目前新兴的mini LED背光，其与前者相比，可以得到更加均匀分布的面光源，视角更大，且可以实现超黑暗态，得到更佳的现实效果。但是目前其光利用率还没有达到最佳，在扩散片上存在往下反射损失光线，没有很好的利用mini LED发出的光线。\n\n[0005]如图1所示，在现有的mini LED背光背板设计中，主要分为无金属覆盖区40以及单层金属覆盖区50。如图2所示，在无金属覆盖区40，扩散板60反射往下的光利用不佳，通过模拟计算(以蓝色光为例，目前较多采用蓝色mini LED)可以得到两种区域的反射效果不同，在无金属覆盖区40，其反射率仅为22％左右。而在单层金属覆盖区50，其反射也较低，仅有61％左右。\n\n发明内容\n\n[0006]本发明的目的是提供一种背光模组及显示装置，以解决现有技术中Mini-LED背光模组中光源反射率不高等问题。\n\n[0007]为实现上述目的，本发明提供一种背光模组，所述背光模组中包括基板、Mini-LED以及至少一导电发光层。所述基板包括发光区和围绕发光区的非发光区。所述Mini-LED设于所述基板的所述发光区。所述导电反光层覆盖整个所述非发光区，所述Mini-LED电连接至一导电反光层。\n\n[0008]进一步地，所述导电反光层包括第一导电反光层、透明绝缘层以及第二导电发光层。所述第一导电反光层设于所述基板上。所述透明绝缘层设于所述第一导电反光层上。所述第二导电反光层设于所述透明绝缘层上。所述Mini-LED电连接至所述第一导电反光层和/或第二导电反光层。\n\n[0009]进一步地，所述背光模组还具有至少一开槽，所述开槽设于所述第二导电反光层上，所述Mini-LED对应于所述开槽并与所述第一导电反光层电连接。\n\n[0010]进一步地，所述第二导电反光层中具有至少一第一反光走线和至少一相互平行的第二反光走线。所述第二反光走线的宽度与小于所述第一反光走线的宽度。所述第一反光走线之间或者所述第二反光走线之间或者一第一反光走线和一第二反光走线之间具有第一间隙，所述开槽对应于所述第一反光走线和与之相邻的第一间隙中。\n\n[0011]进一步地，所述第二导电反光层中具有至少两条相互平行的第三反光走线，每一开槽对应于其中一第三反光走线上。\n\n[0012]进一步地，所述第一导电反光层中具有至少两条互相平行的第四反光走线。相邻的两条第四反光走线之间具有一第二间隙，所述第二间隙对应于一条第一反光走线、一条第二反光走线和一条第三反光走线中的一种或两种。\n\n[0013]进一步地，所述第一间隙的宽度小于所述第四反光走线的宽度。所述第二间隙的宽度小于所述第二反光走线或第三反光走线的宽度。\n\n[0014]进一步地，相邻的两条第三反光走线之间具有一第三间隙，所述第三间隙对应于一条第四反光走线。\n\n[0015]进一步地，所述第三间隙的宽度小于所述第四反光走线的宽度。\n\n[0016]进一步地，所述第一导电反光层中具有至少两条相互平行的第五反光走线，相邻两条第五反光走线之间具有一第四间隙，所述第二导电反光层中具有至少两条相互平行的第六反光走线，所述第四间隙对应于其中一第六反光走线。\n\n[0017]进一步地，相邻的两条第六反光走线之间具有一第五间隙，所述第五间隙对应于其中一条第五反光走线。\n\n[0018]进一步地，所述第四间隙的宽度小于所述第六反光走线的宽度。所述第五间隙的宽度小于所述第五反光走线的宽度。\n\n[0019]本发明中还提供一种显示装置，所述显示装置包括如上所述的背光模组。\n\n[0020]本发明的优点是：本发明的一种背光模组及显示装置，其通过减少无金属区域的面积，通过两层金属走线的覆盖从而提高金属的覆盖面积，从而提高背光模组中光线的反射率，降低光源损失率更低，提高光源利用率。在相同亮度需求的情况下，其可以减少Mini-LED的数量，节省制造成本以及减少显示装置所需的电能，从而节约能源。\n\n附图说明\n\n[0021]图1为现有技术中背光模组的俯视图图；\n\n[0022]图2为现有技术中背光模组的层状结构示意图；\n\n[0023]图3为本发明实施例1中背光模组的层状结构示意图；\n\n[0024]图4为本发明实施例1中背光模组的俯视图；\n\n[0025]图5为本发明实施例2中背光模组的层状结构示意图；\n\n[0026]图6为本发明实施例2中背光模组的俯视图；\n\n[0027]图7为本发明实施例3中背光模组的层状结构示意图；\n\n[0028]图8为本发明实施例3中背光模组的俯视图。\n\n[0029]图中部件表示如下：\n\n[0030]背光模组1；\n\n[0031]基板10；发光区11；\n\n[0032]非发光区12；Mini-LED 20；\n\n[0033]导电反光层30；透明绝缘层31；\n\n[0034]第一导电反光层32；\n\n[0035]第四反光走线321；第二间隙322；\n\n[0036]第五反光走线323；第四间隙324；\n\n[0037]第二导电反光层33；\n\n[0038]第一反光走线331；第二反光走线332；第一间隙333；\n\n[0039]第三反光走线334；第三间隙335；\n\n[0040]第六反光走线336；第五间隙337；\n\n[0041]开槽338；\n\n[0042]无金属覆盖区40；单层金属覆盖区50；\n\n[0043]扩散板60。\n\n具体实施方式\n\n[0044]以下参考说明书附图介绍本发明的优选实施例，证明本发明可以实施，所述发明实施例可以向本领域中的技术人员完整介绍本发明，使其技术内容更加清楚和便于理解。本发明可以通过许多不同形式的发明实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例。\n\n[0045]在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。附图所示的每一部件的尺寸和厚度是任意示出的，本发明并没有限定每个组件的尺寸和厚度。为了使图示更清晰，附图中有些地方适当夸大了部件的厚度。\n\n[0046]此外，以下各发明实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定发明实施例。本发明中所提到的方向用语，例如，“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”、“侧面”等，仅是参考附加图式的方向，因此，使用的方向用语是为了更好、更清楚地说明及理解本发明，而不是指示或暗指所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”、“第三”等仅用于描述目的，而不能理解为指示或暗示相对重要性。\n\n[0047]当某些部件被描述为“在”另一部件“上”时，所述部件可以直接置于所述另一部件上；也可以存在一中间部件，所述部件置于所述中间部件上，且所述中间部件置于另一部件上。当一个部件被描述为“安装至”或“连接至”另一部件时，二者可以理解为直接“安装”或“连接”，或者一个部件通过一中间部件间接“安装至”、或“连接至”另一个部件。\n\n[0048]实施例1\n\n[0049]本发明实施例中提供了一种显示装置，所述显示装置中具有一背光模组1，所述显示装置为液晶显示装置，由于液晶显示装置的中的液晶层为被动发光元件，其需通过所述背光模组1为其提供背光源，从而实现画面的显示。本发明实施例中所提供的显示装置可以为笔记本电脑、手机、平板电脑、电视机等具有画面显示功能的装置。\n\n[0050]如图3所示，所述背光模组1中包括一基板10、若干Mini-LED 20以及导电反光层30。\n\n[0051]所述基板10为透明绝缘基板，例如玻璃基板、石英基板等。所述基板10用于保护所述显示面板的整体架构。\n\n[0052]所述基板10包括发光区11以及围绕所述发光区11的非发光区12，所述Mini-LED20设于所述发光区11内。所述Mini-LED 20用于提供背光光源。\n\n[0053]所述导电反光层30设于所述基板10上。所述导电反光层30中包括一第一导电反光层32、一透明绝缘层31以及一第二导电反光层33。其中，所述第一导电反光层32和所述第二导电反光层33均为金属，所述Mini-LED 20电连接至所述第一导电反光层32。\n\n[0054]所述第一导电反光层32设于所述基板10上，并覆盖在整个基板10上。所述Mini-LED 20设于所述第一导电反光层32上，并与所述第一导电反光层32电连接，所述第一导电反光层32为所述Mini-LED 20传输电源，促使所述Mini-LED 20可以发光。同时，所述第一导电反光层32还可以为Mini-LED 20反光，提高光线的利用率。\n\n[0055]所述第二导电反光层33绝缘设于所述第一导电反光层32远离所述基板10的一表面上，并覆盖所述非发光区12。所述第二导电反光层33用于反射从所述Mini-LED 20所发出的光线。所述第二导电反光层33中具有一开槽338，所述开槽338贯穿所述第二导电反光层33并对应于所述Mini-LED 20。所述开槽338为所述Mini-LED 20提供发光通道。\n\n[0056]所述透明绝缘层31设于所述第一导电反光层32与所述第二导电反光层33之间，其用于件所述第一导电反光层32与所述第二导电反光层33绝缘设置，防止发生短路现象。\n\n[0057]如图4所示，在所述第二导电反光层33中具有若干第一反光走线331以及若干第二反光走线332。所述第一反光走线331与所述第二反光走线332交错设置，并且互相平行。其中，所述第二反光走线332的宽度小于所述第一反光走线331的宽度。在所述第一反光走线331和所述第二反光走线332之间具有一第一间隙333，所述开槽338对应于所述第一反光走线331和与之相邻的第一间隙333中。\n\n[0058]在所述第一导电反光层32中，其具有若干第四反光走线321，所述第四反光走线321排布于所述基板10上。相邻的两条第四反光走线321之间互相平行，并且还具有一第二间隙322。所述Mini-LED 20设于部分第四反光走线321上。\n\n[0059]所述第一间隙333对应于所述第四反光走线321，所述第二间隙322对应于所述第一反光走线331或第二反光走线332。并且所述第一间隙333的宽度小于第二反光走线332的宽度，所述第二间隙322的宽度小于所述第二反光走线332的宽度，从而可以实现金属全覆盖。当Mini-LED 20通电发光时，其大部分光线可以通过开槽338发射出去，还有小部分通过第四反光走线321，即第一导电反光层32的反射穿过所述第一间隙333或开槽338再次发射出去。而第一反光走线331和第二反光走线332，即第二导电反光层33用于将被背光模组1中其他光学膜片层反射回来的光线再次反射回去。\n\n[0060]本发明实施例中所提供的一种背光模组及显示装置，其通过减少无金属区域的面积，通过两层金属走线的覆盖从而提高金属的覆盖面积，从而提高背光模组中光线的反射率，根据模拟计算可以，双层金属覆盖的光线反射率从可以达到70％甚至更高。本发明实施例中所公开的背光模组，其反射率与现有技术相比较更高，光源损失率更低，在相同亮度需求的情况下，其可以减少Mini-LED的数量，节省制造成本以及减少显示装置所需的电能，从而节约能源。\n\n[0061]实施例2\n\n[0062]本发明实施例中提供了一种显示装置，所述显示装置中具有一背光模组1，所述显示装置为液晶显示装置，由于液晶显示装置的中的液晶层为被动发光元件，其需通过所述背光模组1为其提供背光源，从而实现画面的显示。本发明实施例中所提供的显示装置可以为笔记本电脑、手机、平板电脑、电视机等具有画面显示功能的装置。\n\n[0063]如图5所示，所述背光模组1中包括一基板10、若干Mini-LED 20以及导电反光层30。\n\n[0064]所述基板10为透明绝缘基板，例如玻璃基板、石英基板等。所述基板10用于保护所述显示面板的整体架构。\n\n[0065]所述基板10包括发光区11以及围绕所述发光区11的非发光区12，所述Mini-LED20设于所述发光区11内。所述Mini-LED 20用于提供背光光源。\n\n[0066]所述导电反光层30设于所述基板10上。所述导电反光层30中包括一第一导电反光层32、一透明绝缘层31以及一第二导电反光层33。其中，所述第一导电反光层32和所述第二导电反光层33均为金属，所述Mini-LED 20电连接至所述第一导电反光层32。\n\n[0067]所述第一导电反光层32设于所述基板10上，并覆盖在整个基板10上。所述Mini-LED 20设于所述第一导电反光层32上，并与所述第一导电反光层32电连接，所述第一导电反光层32为所述Mini-LED 20传输电源，促使所述Mini-LED 20可以发光。同时，所述第一导电反光层32还可以为Mini-LED 20反光，提高光线的利用率。\n\n[0068]所述第二导电反光层33绝缘设于所述第一导电反光层32远离所述基板10的一表面上，并覆盖所述非发光区12。所述第二导电反光层33用于反射从所述Mini-LED 20所发出的光线。所述第二导电反光层33中具有一开槽338，所述开槽338贯穿所述第二导电反光层33并对应于所述Mini-LED 20。所述开槽338为所述Mini-LED 20提供发光通道。\n\n[0069]所述透明绝缘层31设于所述第一导电反光层32与所述第二导电反光层33之间，其用于件所述第一导电反光层32与所述第二导电反光层33绝缘设置，防止发生短路现象。\n\n[0070]如图6所示，在所述第二导电反光层33中具有若干第三反光走线334。相邻的两条第三反光走线334之间互相平行，并且其之间具有一第三间隙335。所述开槽338对应于设于所述第三反光走线334上。\n\n[0071]在所述第一导电反光层32中，其具有若干第四反光走线321，所述第四反光走线321排布于所述基板10上。相邻的两条第四反光走线321之间互相平行，并且还具有一第二间隙322。所述Mini-LED 20设于部分第四反光走线321上。\n\n[0072]所述第二间隙322对应于所述第三反光走线334，所述第三间隙335对应于所述第四反光走线321。并且所述第二间隙322的宽度小于第三反光走线334的宽度，所述第三间隙335的宽度小于所述第四反光走线321的宽度，从而可以实现金属全覆盖。当Mini-LED 20通电发光时，其大部分光线可以通过开槽338发射出去，还有小部分通过第四反光走线321，即第一导电反光层32的反射穿过所述第一间隙333或开槽338再次发射出去。而第三反光走线334，即第二导电反光层33用于将被背光模组1中其他光学膜片层反射回来的光线再次反射回去。\n\n[0073]本发明实施例中所提供的一种背光模组及显示装置，其通过减少无金属区域的面积，通过两层金属走线的覆盖从而提高金属的覆盖面积，从而提高背光模组中光线的反射率，根据模拟计算可知，双层金属覆盖的光线反射率从可以达到70％甚至更高。本发明实施例中所公开的背光模组，其反射率与现有技术相比较更高，光源损失率更低，在相同亮度需求的情况下，其可以减少Mini-LED的数量，节省制造成本以及减少显示装置所需的电能，从而节约能源。\n\n[0074]实施例3\n\n[0075]本发明实施例中提供了一种显示装置，所述显示装置中具有一背光模组1，所述显示装置为液晶显示装置，由于液晶显示装置的中的液晶层为被动发光元件，其需通过所述背光模组1为其提供背光源，从而实现画面的显示。本发明实施例中所提供的显示装置可以为笔记本电脑、手机、平板电脑、电视机等具有画面显示功能的装置。\n\n[0076]如图7所示，所述背光模组1中包括一基板10、若干Mini-LED 20以及导电反光层30。\n\n[0077]所述基板10为透明绝缘基板，例如玻璃基板、石英基板等。所述基板10用于保护所述显示面板的整体架构。\n\n[0078]所述基板10包括发光区11以及围绕所述发光区11的非发光区12，所述Mini-LED20设于所述发光区11内。所述Mini-LED 20用于提供背光光源。\n\n[0079]所述导电反光层30设于所述基板10上。所述导电反光层30中包括一第一导电反光层32、一透明绝缘层31以及一第二导电反光层33。其中，所述第一导电反光层32和所述第二导电反光层33均为金属，所述Mini-LED 20电连接至所述第二导电反光层33。\n\n[0080]所述第一导电反光层32设于所述基板10上，并覆盖在整个基板10上。所述第一导电反光层32用于反射从第二导电反光层33中漏出的光线。\n\n[0081]所述第二导电反光层33绝缘设于所述第一导电反光层32远离所述基板10的一表面上，并覆盖整个所述发光区11和所述非发光区12。所述Mini-LED 20设于所述第二导电反光层33上，并与所述第二导电反光层33电连接，所述第二导电反光层33为所述Mini-LED 20传输电源，促使所述Mini-LED 20可以发光。同时，所述第一导电反光层32还可以为Mini-LED 20反光，提高光线的利用率。\n\n[0082]所述透明绝缘层31设于所述第一导电反光层32与所述第二导电反光层33之间，其用于件所述第一导电反光层32与所述第二导电反光层33绝缘设置，防止发生短路现象。\n\n[0083]在所述第一导电反光层32中，其具有若干第五反光走线323，所述第五反光走线323排布于所述基板10上。相邻的两条第五反光走线323之间互相平行，并且还具有一第四间隙324。在所述第二导电反光层33中，其具有若干第六反光走线336，所述第六反光走线336排布在所述透明绝缘层31上，如图8所示，所述Mini-LED 20设于部分第六反光走线336上。相邻的两条第六反光走线336之间互相平行，并且其还具有一第五间隙337。\n\n[0084]所述第四间隙324对应于所述第六反光走线336，所述第五间隙337对应于所述第五反光走线323。并且所述第四间隙324的宽度小于第六反光走线336的宽度，所述第五间隙337的宽度小于所述第五反光走线323的宽度，从而可以实现金属全覆盖。当Mini-LED 20通电发光时，其部分通过第五间隙337穿过的光线可以通过第五反光走线323再次反射回来。\n\n[0085]本发明实施例中所提供的一种背光模组及显示装置，其通过减少无金属区域的面积，通过两层金属走线的覆盖从而提高金属的覆盖面积，从而提高背光模组中光线的反射率，根据模拟计算可知，双层金属覆盖的光线反射率从可以达到70％甚至更高。本发明实施例中所公开的背光模组，其反射率与现有技术相比较更高，光源损失率更低，在相同亮度需求的情况下，其可以减少Mini-LED的数量，节省制造成本以及减少显示装置所需的电能，从而节约能源。\n\n[0086]虽然在本文中参照了特定的实施方式来描述本发明，但是应该理解的是，这些实施例仅仅是本发明的原理和应用的示例。因此应该理解的是，可以对示例性的实施例进行许多修改，并且可以设计出其他的布置，只要不偏离所附权利要求所限定的本发明的精神和范围。应该理解的是，可以通过不同于原始权利要求所描述的方式来结合不同的从属权利要求和本文中所述的特征。还可以理解的是，结合单独实施例所描述的特征可以使用在其他所述实施例中。');
INSERT INTO `os_patent_instruction_text` VALUES (10749, 23803, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种微型发光二极管转移装置、转移方法及显示装置。\n\n背景技术\n\n[0002]微型发光二极管（Micro-light emitting diodes，MicroLED）是一种新型自发光显示技术，具有亮度高，发光效率好，功耗低，寿命长且轻薄等优点的显示器件，有望成为下一代主流显示技术。与目前主流显示屏幕LCD和OLED相比，其耗电量明显降低，分别为LCD的10%、OLED的50%，且亮度比OLED高几个数量级。\n\n[0003]MicroLED技术主要是将微缩后的几微米到几十微米的LED在基板上进行阵列排布，而形成具有高密度微小尺寸的LED阵列。但目前MicroLED的发展受制于芯片（巨量）转移等关键技术。然而目前，通过巨量转移及巨量转移后的芯片与基板的键合是MicroLED显示技术实现良率提升的瓶颈所在。\n\n[0004]现如今，MicroLED转移技术路线主要有范德华力、静电吸附、流体自组装、辐射激光等方式进行转移，完成对位后再进行加热进行焊接，但这些转移方法过程中，都存在速度慢、严重影响MicroLED的量产化。\n\n发明内容\n\n[0005]本申请实施例提供一种微型发光二极管转移装置、转移方法及显示装置，能够提高微型发光二极管的转移速度，使得微型发光二极管技术能够更加适合量产。\n\n[0006]本申请提供一种微型发光二极管转移装置，用于转移微型发光二极管，包括：\n\n[0007]收集管，具有相对设置的第一端和第二端，所述收集管的管径大于所述微型发光二管的直径；\n\n[0008]弹性端口，设置在所述第一端端部，所述弹性端口的口径小于所述微型发光二极管的直径；\n\n[0009]其中，所述收集管将微型发光二极管通过挤压后从所述弹性端口进入到所述收集管内，所述收集管可存储若干微型发光二极管。\n\n[0010]在一些实施例中，还包括驱动装置，所述驱动装置设置在第二端，所述驱动装置提供驱动力以使得所述收集管将微型发光二极管从所述弹性端口拾取到所述收集管内。\n\n[0011]在一些实施例中，所述弹性端口包括固定套和弹性件，所述固定套与所述第一端可拆卸连接，所述弹性件固定在所述固定套内，所述弹性件具有开口，所述弹性件可使得所述开口增大或者减小。\n\n[0012]在一些实施例中，所述弹性件为一个胶套，所述胶套上套设在所述第一端端部，所述胶套上设有开口，所述开口可增大或者减小。\n\n[0013]在一些实施例中，所述收集管包括至少两个，多个所述收集管与同一驱动装置连接。\n\n[0014]在一些实施例中，还包括激光剥离装置，所述激光剥离装置用于从临时基板上剥离所述微型发光二极管。\n\n[0015]在一些实施例中，所述收集管为圆柱形腔体、长方形腔体、三角形腔体、菱形腔体、多边形腔体中的任一种。\n\n[0016]在一些实施例中，所述收集管为材料为聚酰亚胺塑料、聚乙烯塑料、聚对苯二甲酸乙二醇酯塑料、玻璃、石英、金属中的任一种。\n\n[0017]本申请实施例还提供一种微型发光二极管转移方法，包括：\n\n[0018]采用微型发光二极管转移装置从临时基板上拾取微型发光二极管，其中，所述微型发光二极管转移装置以上所述的微型发光二极管转移装置；\n\n[0019]将所述微型发光二极管存储在所述微型发光二极管转移装置的收集管中；\n\n[0020]将所述收集管中的微型发光二极管转移到目标基板上。\n\n[0021]本申请实施例还提供一种显示装置，采用以上所述的方法制造的显示装置。\n\n[0022]本申请实施例所提供的微型发光二极管转移装置包括收集管和弹性端口，收集管具有相对设置的第一端和第二端，所述收集管的管径大于所述微型发光二管的直径，弹性端口设置在所述第一端端部，所述弹性端口的口径小于所述微型发光二极管的直径；其中，所述收集管将微型发光二极管通过挤压后从所述弹性端口进入到所述收集管内，所述收集管可存储若干微型发光二极管。本申请通过微型发光二极管转移装置，可以对不同区域的微型发光二极管进行拾取，有效提高转移速度，并且，可对微型发光二极管可单独进行存放，或直接进行下一步释放至目标基板。进一步提高在微型发光二极管在转移过程中的便利性，提高了微型发光二极管技术更加适合量产。\n\n附图说明\n\n[0023]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0024]图1是本申请实施例提供的微型发光二极管转移装置结构示意图。\n\n[0025]图2是本申请实施例提供的另一种微型发光二极管转移装置的结构示意图。\n\n[0026]图3是本申请实施例提供的又一种微型发光二极管转移装置的结构示意图。\n\n[0027]图4是本申请实施例提供的微型发光二极管转移方法的流程示意图。\n\n[0028]图5是本申请实施例提供的显示装置的结构示意图。\n\n具体实施方式\n\n[0029]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0030]需要说明的是，在本申请的描述中，需要理解的是，术语“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。\n\n[0031]本申请实施例提供一种微型发光二极管转移装置、转移方法及显示装置，以下微型发光二极管转移装置做详细介绍。\n\n[0032]请参阅图1，图1是本申请实施例提供的微型发光二极管转移装置结构示意图。其中，微型发光二极管转移装置10包括收集管11和弹性端口14，收集管11具有相对设置的第一端11a和第二端11b，所述收集管11的管径大于所述微型发光二管20的直径，弹性端口14设置在所述第一端11b端部，所述弹性端口14的口径小于所述微型发光二极管20的直径；其中，所述收集管11将微型发光二极管20通过挤压后从所述弹性端口14进入到所述收集管11内，所述收集管11可存储若干微型发光二极管。\n\n[0033]需要说明的是，第一端11a可以为收集管11的下端，第二端11b可以为收集管11的上端面。当然，第一端11a也可以为收集管11的上端，第二端11b可以为收集管11的上表面。可以理解的是，第一端11a和第二端11b的只是说明收集管11的相对位置关系，可以根据具体的使用情况进行位置互换。\n\n[0034]其中，微型发光二极管转移装置10还包括驱动装置12，所述驱动装置12设置在第二端11b，所述驱动装置12提供驱动力以使得所述收集管11将微型发光二极管20从所述弹性端口14拾取到所述收集管11内。\n\n[0035]驱动装置12可以包括处理器121和动力机构122，处理器121可以接受处理信号，并控制动力机构122产生动力。可以理解的是，动力机构122可以是真空泵，真空泵可以产生真空吸引力，通过真空吸引力从而使得收集管11可以拾取微型发光二极管20。当然，动力机构122也可以是电磁装置，电磁装置可以产生电磁力，电磁力可以使得收集管11可以拾取微型发光二极管。当然，动力机构122不限于此，本申请实施例中不做过多赘述。\n\n[0036]其中，所述弹性端口14包括固定套141和弹性件142，所述固定套141与所述第一端11a可拆卸连接，所述弹性件142固定在所述固定套141内，所述弹性件142具有开口，所述弹性件142可使得所述开口增大或者减小。\n\n[0037]其中，固定套141可以是套件，固定套141可以采用金属、硬质塑料等材料。弹性件142采用可以采用硅胶、橡胶等材料制成。可以理解的是，由于弹性件142具有弹性，因此，在挤压下，弹性件142的开口可增大或者减小，当弹性件142不被挤压的时候，开口的口径小于微型发光二极管20的直径，当挤压收集管11，微型发光二极管20从开口挤压进入到收集管11腔体中，从而存储微型发光二极管20。\n\n[0038]其中，所述弹性件142为一个胶套，所述胶套上套设在所述第一端端部，所述胶套上设有开口，所述开口可增大或者减小。\n\n[0039]可以理解的是，由于胶套具有弹性，因此，在挤压下，胶套的开口可增大或者减小，当胶套不被挤压的时候，开口的口径小于微型发光二极管的直径，当挤压收集管，微型发光二极管从开口挤压进入到收集管腔体中，从而存储微型发光二极管。\n\n[0040]请参阅图2，图2是本申请实施例提供的另一种微型发光二极管转移装置的结构示意图。其中，所述收集管11包括至少两个，多个所述收集管11与同一驱动装置12连接。可以理解的是，通过多个收集管11可以同时拾取微型发光二极管20。这样可以大大提高拾取微型发光二极管20的速度。\n\n[0041]具体的，每一个收集管11均连接同一个驱动装置12，这样可以通过驱动装置12使得所有收集管11统一拾取微型发光二极管20，这样不仅能够提升拾取微型发光二极管20的效率，同时还能够降低成本。\n\n[0042]另外的，每一个收集管11可以独立连接一个驱动装置12，这样可以根据需要对特定区域的微型发光二极管20进行拾取。比如，微型发光二极管20还可以包括一个检测装置，该检测装置可以检测微型发光二极管20是否合格，若检测到微型发光二极管20不合格，则可以控制对应的驱动装置12将不合格的微型发光二极管20拾取后，放入废品存储区域。又或者，将不合格的微型发光二极管20存储在微型发光二极管20中。\n\n[0043]请参阅图3，图3是本申请实施例提供的又一种微型发光二极管转移装置的结构示意图。其中，微型发光二极管20还包括激光剥离装置13，所述激光剥离装置13用于从临时基板/LED生长的衬底上30上剥离所述微型发光二极管20。\n\n[0044]通过激光剥离装置13将微型发光二极管20从临时基板30上剥离，微型发光二极管转移装置10可以拾取激光剥离装置13剥离后的微型发光二极管20。同时，微型发光二极管转移装置10在拾取剥离的微型发光二极管20时，可以通过重力拾取微型发光二极管20。另外的，在收集管11拾取微型发光二极管20的过程中，可以控制驱动装置12产生驱动力，从而控制微型发光二极管20在收集管11中的下降速度。\n\n[0045]其中，所述收集管11为圆柱形腔体、长方形腔体、三角形腔体、菱形腔体、多边形腔体中的任一种。\n\n[0046]可以理解的是，收集管11的形状不限于此，收集管11还可以根据微型发光二极管20的形状做适应性的调整。\n\n[0047]比如，微型发光二极管20的形状为圆形的，那么收集管11的形状为圆柱形。收集管11的管径大于微型发光二极管20的的直径。当微型发光二极管20收纳在收集管11中时，微型发光二极管20可以一次层叠堆积，因此，收集管11可以收集多个微型发光二极管20。同时，由于收集的微型发光二极管20时层叠堆积的，因此，将微型发光二极管20转移到目标基板上时能够很好的排列。这样进一步的提高了微型发光二极管20的转移速度。\n\n[0048]其中，所述收集管11为材料为聚酰亚胺塑料、聚乙烯塑料、聚对苯二甲酸乙二醇酯塑料、玻璃、石英、金属中的任一种。\n\n[0049]可以理解的是，收集管11的材料不限于此，收集管11具体采用的材料还可以是其他材料。例如陶瓷等。\n\n[0050]本申请实施例所提供的微型发光二极管转移装置10包括收集管11和弹性端口14，收集管11具有相对设置的第一端11a和第二端11b，所述收集管11的管径大于所述微型发光二管20的直径，弹性端口14设置在所述第一端11b端部，所述弹性端口14的口径小于所述微型发光二极管20的直径；其中，所述收集管11将微型发光二极管20通过挤压后从所述弹性端口14进入到所述收集管11内，所述收集管11可存储若干微型发光二极管。本申请通过微型发光二极管转移装置10，可以对不同区域的微型发光二极管20进行拾取，有效提高转移速度，并且，可对微型发光二极管20可单独进行存放，或直接进行下一步释放至目标基板。进一步提高在微型发光二极管20在转移过程中的便利性，提高了微型发光二极管20技术更加适合量产。\n\n[0051]请参阅图4，图4是本申请实施例提供的微型发光二极管转移方法的流程示意图。其中，本申请实施例提供的一种微型发光二极管转移方法，包括如下步骤：\n\n[0052]201、采用微型发光二极管转移装置从临时基板上拾取微型发光二极管。\n\n[0053]需要说明的是，微型发光二极管转移装置为上述实施例中所述的微型发光二极管。由于上述实施例中微型发光二极管已经进行了详细的描述，因此，本申请实施例中对微型发光二极管转移装置不做过多赘述。\n\n[0054]另外的，微型发光二极管转移装置中可以包括多个收集管同时拾取临时基板上的微型发光二极管。这样可以加快拾取微型光二极管的速度。\n\n[0055]202将所述微型发光二极管存储在所述微型发光二极管转移装置的收集管中。\n\n[0056]需要说明的是，收集管的可以为收集管为圆柱形腔体、长方形腔体、三角形腔体、菱形腔体、多边形腔体中的任一种。收集管的形状可以根据微型发光二极管的具体形状做适应性的调整。\n\n[0057]比如，微型发光二极管的形状为圆形的，那么收集管的形状为圆柱形。收集管的管径大于微型发光二极管的直径。当微型发光二极管收纳在收集管中时，微型发光二极管可以一次层叠堆积，因此，收集管可以收集多个微型发光二极管。同时，由于收集的微型发光二极管时层叠堆积的，因此，将微型发光二极管转移到目标基板上时能够很好的排列。这样进一步的提高了微型发光二极管的转移速度。\n\n[0058]203将所述收集管中的微型发光二极管转移到目标基板上。\n\n[0059]需要说明的是，将收集管中的微型发光二极管与目标基板完成对位，将微型发光准确的转移到目标基板上，从而完整微型发光二极管的转移。\n\n[0060]在一些实施例中，所述步骤“所述采用微型发光二极管转移装置从临时基板上拾取微型发光二极管”，包括步骤：\n\n[0061]通过驱动装置提供驱动力从临时基板上拾取微型发光二极管，其中，所述驱动力为真空力、电磁力、静电力中任一种。\n\n[0062]需要说明的是，驱动装置可以包括处理器和动力装置，处理器可以接受处理信号，并控制动力装置产生动力。可以理解的是，动力装置可以是真空泵，真空泵可以产生真空吸引力，通过真空吸引力从而使得收集管可以拾取微型发光二极管。当然，动力装置也可以是电磁装置，电磁装置可以产生电磁力，电磁力可以使得收集管可以拾取微型发光二极管。当然，动力装置不限于此，本申请实施例中不做过多赘述。\n\n[0063]在一些实施例中，所述步骤“所述采用微型发光二极管转移装置从临时基板上拾取微型发光二极管”，包括步骤：\n\n[0064]（1）、将微型发光二极管从临时基板上剥离。\n\n[0065]需要说明的是，将微型发光二极管从临时基板上剥离的方式可以是通过微型发光二极管转移剥离。具体的，通过微型发光二极管转移装置中的驱动装置，产生吸力，从而使得微型发光二极管从临时基板上剥离。通过微型发光二极管转移装置将微型发光二极管从临时基板上剥离，这种方式，不需要额外增加一道剥离工序，这样能够加快微型发光二极管的转移速度。\n\n[0066]具体的，将微型发光二极管通过激光剥离装置从临时基板上剥离。\n\n[0067]需要说明的是，通过激光剥离装置将微型发光二极管从临时基板上剥离，微型发光二极管转移装置可以拾取激光剥离装置剥离后的微型发光二极管。同时，微型发光二极管转移装置在拾取剥离的微型发光二极管时，可以通过重力拾取微型发光二极管。另外的，在收集管拾取微型发光二极管的过程中，可以控制驱动装置的产生驱动力，从而控制微型发光二极管在收集管中的下降速度。\n\n[0068]（2）、微型发光二极管拾取从临时基板上剥离的微型发光二极管。\n\n[0069]需要说明的是，收集管不仅将微型发光二极管从临时基板上剥离，同时收集管还将微型发光二极管收集并存储到收集管中，这样收集管能够起到多个作用，减少了转移微型发光二极管的工序，这样加快了转移微型发光二极管的速度。\n\n[0070]在一些实施例中，所述步骤“所述采用微型发光二极管转移装置从临时基板上拾取微型发光二极管之前”，包括步骤：\n\n[0071]（1）检测所述微型发光二极管的是否合格。\n\n[0072]需要说明的是，通过检测装置检测微型发光二极管是否合格。具体的检测方式可以检测微型发光二极管的电学特性、光学特性等是否符合规定。若微型发光二极管的电学特性或者光学特性合格则确认微型发光二极管为合格的微型发光二极管。如果微型发光二极管的电学特性或者光学特性不合格则确认微型发光二极管为不合格的微型发光二极管\n\n[0073]（2）若所述微型发光二极管不合格，将不合格的微型发光二极管通过微型发光二极管转移装置转移到存储区域中。\n\n[0074]需要说明的是，存储区域可以是一个用来存储不合格微型发光二极管的存储装置，也可以是存储在收集管内。如果，不合格的微型发光二极管存储在收集管内，则需要对不合格的微型发光二极管做出标记。从而确保不合格的微型发光二极管不会转移到目标基板上。可以理解的是，本申请实施例中所述的标记可以是处理器中的一种处理方式。\n\n[0075]通过本申请实施例中对微型发光二极管的检测，可以确保将合格的微型发光二极管转移到目标基板上，从而确保转移到目标基板的微型发光二极管时可用的，这样可以提高显示装置的效果。\n\n[0076]由于采用本申请微型发光二极管转移方法，可以对不同区域的微型发光二极管进行拾取，有效提高转移速度，并且，可对微型发光二极管可单独进行存放，或直接进行下一步释放至目标基板。进一步提高在微型发光二极管在转移过程中的便利性，提高了微型发光二极管技术更加适合量产。\n\n[0077]请参阅图5，图5是本申请实施例提供的显示装置的结构示意图。其中，显示装置100包括基板102和微型发光二极管层101，所述微型发光二极管层101是采用上述微型发光二极管20转移方法转移的，上述实施例中微型发光二极管20转移方法已经详细描述，本申请实施例中不在过多赘述。\n\n[0078]由于本申请实施例采用上述实施例中的微型发光二极管20转移方法，因此，本申请的显示装置100制造速度非常快，适合量产。\n\n[0079]以上对本申请实施例提供的微型发光二极管转移装置、转移方法及显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种微型发光二极管转移装置、转移方法及显示装置。\n\n背景技术\n\n[0002]微型发光二极管（Micro-light emitting diodes，MicroLED）是一种新型自发光显示技术，具有亮度高，发光效率好，功耗低，寿命长且轻薄等优点的显示器件，有望成为下一代主流显示技术。与目前主流显示屏幕LCD和OLED相比，其耗电量明显降低，分别为LCD的10%、OLED的50%，且亮度比OLED高几个数量级。\n\n[0003]MicroLED技术主要是将微缩后的几微米到几十微米的LED在基板上进行阵列排布，而形成具有高密度微小尺寸的LED阵列。但目前MicroLED的发展受制于芯片（巨量）转移等关键技术。然而目前，通过巨量转移及巨量转移后的芯片与基板的键合是MicroLED显示技术实现良率提升的瓶颈所在。\n\n[0004]现如今，MicroLED转移技术路线主要有范德华力、静电吸附、流体自组装、辐射激光等方式进行转移，完成对位后再进行加热进行焊接，但这些转移方法过程中，都存在速度慢、严重影响MicroLED的量产化。\n\n发明内容\n\n[0005]本申请实施例提供一种微型发光二极管转移装置、转移方法及显示装置，能够提高微型发光二极管的转移速度，使得微型发光二极管技术能够更加适合量产。\n\n[0006]本申请提供一种微型发光二极管转移装置，用于转移微型发光二极管，包括：\n\n[0007]收集管，具有相对设置的第一端和第二端，所述收集管的管径大于所述微型发光二管的直径；\n\n[0008]弹性端口，设置在所述第一端端部，所述弹性端口的口径小于所述微型发光二极管的直径；\n\n[0009]其中，所述收集管将微型发光二极管通过挤压后从所述弹性端口进入到所述收集管内，所述收集管可存储若干微型发光二极管。\n\n[0010]在一些实施例中，还包括驱动装置，所述驱动装置设置在第二端，所述驱动装置提供驱动力以使得所述收集管将微型发光二极管从所述弹性端口拾取到所述收集管内。\n\n[0011]在一些实施例中，所述弹性端口包括固定套和弹性件，所述固定套与所述第一端可拆卸连接，所述弹性件固定在所述固定套内，所述弹性件具有开口，所述弹性件可使得所述开口增大或者减小。\n\n[0012]在一些实施例中，所述弹性件为一个胶套，所述胶套上套设在所述第一端端部，所述胶套上设有开口，所述开口可增大或者减小。\n\n[0013]在一些实施例中，所述收集管包括至少两个，多个所述收集管与同一驱动装置连接。\n\n[0014]在一些实施例中，还包括激光剥离装置，所述激光剥离装置用于从临时基板上剥离所述微型发光二极管。\n\n[0015]在一些实施例中，所述收集管为圆柱形腔体、长方形腔体、三角形腔体、菱形腔体、多边形腔体中的任一种。\n\n[0016]在一些实施例中，所述收集管为材料为聚酰亚胺塑料、聚乙烯塑料、聚对苯二甲酸乙二醇酯塑料、玻璃、石英、金属中的任一种。\n\n[0017]本申请实施例还提供一种微型发光二极管转移方法，包括：\n\n[0018]采用微型发光二极管转移装置从临时基板上拾取微型发光二极管，其中，所述微型发光二极管转移装置以上所述的微型发光二极管转移装置；\n\n[0019]将所述微型发光二极管存储在所述微型发光二极管转移装置的收集管中；\n\n[0020]将所述收集管中的微型发光二极管转移到目标基板上。\n\n[0021]本申请实施例还提供一种显示装置，采用以上所述的方法制造的显示装置。\n\n[0022]本申请实施例所提供的微型发光二极管转移装置包括收集管和弹性端口，收集管具有相对设置的第一端和第二端，所述收集管的管径大于所述微型发光二管的直径，弹性端口设置在所述第一端端部，所述弹性端口的口径小于所述微型发光二极管的直径；其中，所述收集管将微型发光二极管通过挤压后从所述弹性端口进入到所述收集管内，所述收集管可存储若干微型发光二极管。本申请通过微型发光二极管转移装置，可以对不同区域的微型发光二极管进行拾取，有效提高转移速度，并且，可对微型发光二极管可单独进行存放，或直接进行下一步释放至目标基板。进一步提高在微型发光二极管在转移过程中的便利性，提高了微型发光二极管技术更加适合量产。\n\n附图说明\n\n[0023]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0024]图1是本申请实施例提供的微型发光二极管转移装置结构示意图。\n\n[0025]图2是本申请实施例提供的另一种微型发光二极管转移装置的结构示意图。\n\n[0026]图3是本申请实施例提供的又一种微型发光二极管转移装置的结构示意图。\n\n[0027]图4是本申请实施例提供的微型发光二极管转移方法的流程示意图。\n\n[0028]图5是本申请实施例提供的显示装置的结构示意图。\n\n具体实施方式\n\n[0029]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0030]需要说明的是，在本申请的描述中，需要理解的是，术语“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。\n\n[0031]本申请实施例提供一种微型发光二极管转移装置、转移方法及显示装置，以下微型发光二极管转移装置做详细介绍。\n\n[0032]请参阅图1，图1是本申请实施例提供的微型发光二极管转移装置结构示意图。其中，微型发光二极管转移装置10包括收集管11和弹性端口14，收集管11具有相对设置的第一端11a和第二端11b，所述收集管11的管径大于所述微型发光二管20的直径，弹性端口14设置在所述第一端11b端部，所述弹性端口14的口径小于所述微型发光二极管20的直径；其中，所述收集管11将微型发光二极管20通过挤压后从所述弹性端口14进入到所述收集管11内，所述收集管11可存储若干微型发光二极管。\n\n[0033]需要说明的是，第一端11a可以为收集管11的下端，第二端11b可以为收集管11的上端面。当然，第一端11a也可以为收集管11的上端，第二端11b可以为收集管11的上表面。可以理解的是，第一端11a和第二端11b的只是说明收集管11的相对位置关系，可以根据具体的使用情况进行位置互换。\n\n[0034]其中，微型发光二极管转移装置10还包括驱动装置12，所述驱动装置12设置在第二端11b，所述驱动装置12提供驱动力以使得所述收集管11将微型发光二极管20从所述弹性端口14拾取到所述收集管11内。\n\n[0035]驱动装置12可以包括处理器121和动力机构122，处理器121可以接受处理信号，并控制动力机构122产生动力。可以理解的是，动力机构122可以是真空泵，真空泵可以产生真空吸引力，通过真空吸引力从而使得收集管11可以拾取微型发光二极管20。当然，动力机构122也可以是电磁装置，电磁装置可以产生电磁力，电磁力可以使得收集管11可以拾取微型发光二极管。当然，动力机构122不限于此，本申请实施例中不做过多赘述。\n\n[0036]其中，所述弹性端口14包括固定套141和弹性件142，所述固定套141与所述第一端11a可拆卸连接，所述弹性件142固定在所述固定套141内，所述弹性件142具有开口，所述弹性件142可使得所述开口增大或者减小。\n\n[0037]其中，固定套141可以是套件，固定套141可以采用金属、硬质塑料等材料。弹性件142采用可以采用硅胶、橡胶等材料制成。可以理解的是，由于弹性件142具有弹性，因此，在挤压下，弹性件142的开口可增大或者减小，当弹性件142不被挤压的时候，开口的口径小于微型发光二极管20的直径，当挤压收集管11，微型发光二极管20从开口挤压进入到收集管11腔体中，从而存储微型发光二极管20。\n\n[0038]其中，所述弹性件142为一个胶套，所述胶套上套设在所述第一端端部，所述胶套上设有开口，所述开口可增大或者减小。\n\n[0039]可以理解的是，由于胶套具有弹性，因此，在挤压下，胶套的开口可增大或者减小，当胶套不被挤压的时候，开口的口径小于微型发光二极管的直径，当挤压收集管，微型发光二极管从开口挤压进入到收集管腔体中，从而存储微型发光二极管。\n\n[0040]请参阅图2，图2是本申请实施例提供的另一种微型发光二极管转移装置的结构示意图。其中，所述收集管11包括至少两个，多个所述收集管11与同一驱动装置12连接。可以理解的是，通过多个收集管11可以同时拾取微型发光二极管20。这样可以大大提高拾取微型发光二极管20的速度。\n\n[0041]具体的，每一个收集管11均连接同一个驱动装置12，这样可以通过驱动装置12使得所有收集管11统一拾取微型发光二极管20，这样不仅能够提升拾取微型发光二极管20的效率，同时还能够降低成本。\n\n[0042]另外的，每一个收集管11可以独立连接一个驱动装置12，这样可以根据需要对特定区域的微型发光二极管20进行拾取。比如，微型发光二极管20还可以包括一个检测装置，该检测装置可以检测微型发光二极管20是否合格，若检测到微型发光二极管20不合格，则可以控制对应的驱动装置12将不合格的微型发光二极管20拾取后，放入废品存储区域。又或者，将不合格的微型发光二极管20存储在微型发光二极管20中。\n\n[0043]请参阅图3，图3是本申请实施例提供的又一种微型发光二极管转移装置的结构示意图。其中，微型发光二极管20还包括激光剥离装置13，所述激光剥离装置13用于从临时基板/LED生长的衬底上30上剥离所述微型发光二极管20。\n\n[0044]通过激光剥离装置13将微型发光二极管20从临时基板30上剥离，微型发光二极管转移装置10可以拾取激光剥离装置13剥离后的微型发光二极管20。同时，微型发光二极管转移装置10在拾取剥离的微型发光二极管20时，可以通过重力拾取微型发光二极管20。另外的，在收集管11拾取微型发光二极管20的过程中，可以控制驱动装置12产生驱动力，从而控制微型发光二极管20在收集管11中的下降速度。\n\n[0045]其中，所述收集管11为圆柱形腔体、长方形腔体、三角形腔体、菱形腔体、多边形腔体中的任一种。\n\n[0046]可以理解的是，收集管11的形状不限于此，收集管11还可以根据微型发光二极管20的形状做适应性的调整。\n\n[0047]比如，微型发光二极管20的形状为圆形的，那么收集管11的形状为圆柱形。收集管11的管径大于微型发光二极管20的的直径。当微型发光二极管20收纳在收集管11中时，微型发光二极管20可以一次层叠堆积，因此，收集管11可以收集多个微型发光二极管20。同时，由于收集的微型发光二极管20时层叠堆积的，因此，将微型发光二极管20转移到目标基板上时能够很好的排列。这样进一步的提高了微型发光二极管20的转移速度。\n\n[0048]其中，所述收集管11为材料为聚酰亚胺塑料、聚乙烯塑料、聚对苯二甲酸乙二醇酯塑料、玻璃、石英、金属中的任一种。\n\n[0049]可以理解的是，收集管11的材料不限于此，收集管11具体采用的材料还可以是其他材料。例如陶瓷等。\n\n[0050]本申请实施例所提供的微型发光二极管转移装置10包括收集管11和弹性端口14，收集管11具有相对设置的第一端11a和第二端11b，所述收集管11的管径大于所述微型发光二管20的直径，弹性端口14设置在所述第一端11b端部，所述弹性端口14的口径小于所述微型发光二极管20的直径；其中，所述收集管11将微型发光二极管20通过挤压后从所述弹性端口14进入到所述收集管11内，所述收集管11可存储若干微型发光二极管。本申请通过微型发光二极管转移装置10，可以对不同区域的微型发光二极管20进行拾取，有效提高转移速度，并且，可对微型发光二极管20可单独进行存放，或直接进行下一步释放至目标基板。进一步提高在微型发光二极管20在转移过程中的便利性，提高了微型发光二极管20技术更加适合量产。\n\n[0051]请参阅图4，图4是本申请实施例提供的微型发光二极管转移方法的流程示意图。其中，本申请实施例提供的一种微型发光二极管转移方法，包括如下步骤：\n\n[0052]201、采用微型发光二极管转移装置从临时基板上拾取微型发光二极管。\n\n[0053]需要说明的是，微型发光二极管转移装置为上述实施例中所述的微型发光二极管。由于上述实施例中微型发光二极管已经进行了详细的描述，因此，本申请实施例中对微型发光二极管转移装置不做过多赘述。\n\n[0054]另外的，微型发光二极管转移装置中可以包括多个收集管同时拾取临时基板上的微型发光二极管。这样可以加快拾取微型光二极管的速度。\n\n[0055]202将所述微型发光二极管存储在所述微型发光二极管转移装置的收集管中。\n\n[0056]需要说明的是，收集管的可以为收集管为圆柱形腔体、长方形腔体、三角形腔体、菱形腔体、多边形腔体中的任一种。收集管的形状可以根据微型发光二极管的具体形状做适应性的调整。\n\n[0057]比如，微型发光二极管的形状为圆形的，那么收集管的形状为圆柱形。收集管的管径大于微型发光二极管的直径。当微型发光二极管收纳在收集管中时，微型发光二极管可以一次层叠堆积，因此，收集管可以收集多个微型发光二极管。同时，由于收集的微型发光二极管时层叠堆积的，因此，将微型发光二极管转移到目标基板上时能够很好的排列。这样进一步的提高了微型发光二极管的转移速度。\n\n[0058]203将所述收集管中的微型发光二极管转移到目标基板上。\n\n[0059]需要说明的是，将收集管中的微型发光二极管与目标基板完成对位，将微型发光准确的转移到目标基板上，从而完整微型发光二极管的转移。\n\n[0060]在一些实施例中，所述步骤“所述采用微型发光二极管转移装置从临时基板上拾取微型发光二极管”，包括步骤：\n\n[0061]通过驱动装置提供驱动力从临时基板上拾取微型发光二极管，其中，所述驱动力为真空力、电磁力、静电力中任一种。\n\n[0062]需要说明的是，驱动装置可以包括处理器和动力装置，处理器可以接受处理信号，并控制动力装置产生动力。可以理解的是，动力装置可以是真空泵，真空泵可以产生真空吸引力，通过真空吸引力从而使得收集管可以拾取微型发光二极管。当然，动力装置也可以是电磁装置，电磁装置可以产生电磁力，电磁力可以使得收集管可以拾取微型发光二极管。当然，动力装置不限于此，本申请实施例中不做过多赘述。\n\n[0063]在一些实施例中，所述步骤“所述采用微型发光二极管转移装置从临时基板上拾取微型发光二极管”，包括步骤：\n\n[0064]（1）、将微型发光二极管从临时基板上剥离。\n\n[0065]需要说明的是，将微型发光二极管从临时基板上剥离的方式可以是通过微型发光二极管转移剥离。具体的，通过微型发光二极管转移装置中的驱动装置，产生吸力，从而使得微型发光二极管从临时基板上剥离。通过微型发光二极管转移装置将微型发光二极管从临时基板上剥离，这种方式，不需要额外增加一道剥离工序，这样能够加快微型发光二极管的转移速度。\n\n[0066]具体的，将微型发光二极管通过激光剥离装置从临时基板上剥离。\n\n[0067]需要说明的是，通过激光剥离装置将微型发光二极管从临时基板上剥离，微型发光二极管转移装置可以拾取激光剥离装置剥离后的微型发光二极管。同时，微型发光二极管转移装置在拾取剥离的微型发光二极管时，可以通过重力拾取微型发光二极管。另外的，在收集管拾取微型发光二极管的过程中，可以控制驱动装置的产生驱动力，从而控制微型发光二极管在收集管中的下降速度。\n\n[0068]（2）、微型发光二极管拾取从临时基板上剥离的微型发光二极管。\n\n[0069]需要说明的是，收集管不仅将微型发光二极管从临时基板上剥离，同时收集管还将微型发光二极管收集并存储到收集管中，这样收集管能够起到多个作用，减少了转移微型发光二极管的工序，这样加快了转移微型发光二极管的速度。\n\n[0070]在一些实施例中，所述步骤“所述采用微型发光二极管转移装置从临时基板上拾取微型发光二极管之前”，包括步骤：\n\n[0071]（1）检测所述微型发光二极管的是否合格。\n\n[0072]需要说明的是，通过检测装置检测微型发光二极管是否合格。具体的检测方式可以检测微型发光二极管的电学特性、光学特性等是否符合规定。若微型发光二极管的电学特性或者光学特性合格则确认微型发光二极管为合格的微型发光二极管。如果微型发光二极管的电学特性或者光学特性不合格则确认微型发光二极管为不合格的微型发光二极管\n\n[0073]（2）若所述微型发光二极管不合格，将不合格的微型发光二极管通过微型发光二极管转移装置转移到存储区域中。\n\n[0074]需要说明的是，存储区域可以是一个用来存储不合格微型发光二极管的存储装置，也可以是存储在收集管内。如果，不合格的微型发光二极管存储在收集管内，则需要对不合格的微型发光二极管做出标记。从而确保不合格的微型发光二极管不会转移到目标基板上。可以理解的是，本申请实施例中所述的标记可以是处理器中的一种处理方式。\n\n[0075]通过本申请实施例中对微型发光二极管的检测，可以确保将合格的微型发光二极管转移到目标基板上，从而确保转移到目标基板的微型发光二极管时可用的，这样可以提高显示装置的效果。\n\n[0076]由于采用本申请微型发光二极管转移方法，可以对不同区域的微型发光二极管进行拾取，有效提高转移速度，并且，可对微型发光二极管可单独进行存放，或直接进行下一步释放至目标基板。进一步提高在微型发光二极管在转移过程中的便利性，提高了微型发光二极管技术更加适合量产。\n\n[0077]请参阅图5，图5是本申请实施例提供的显示装置的结构示意图。其中，显示装置100包括基板102和微型发光二极管层101，所述微型发光二极管层101是采用上述微型发光二极管20转移方法转移的，上述实施例中微型发光二极管20转移方法已经详细描述，本申请实施例中不在过多赘述。\n\n[0078]由于本申请实施例采用上述实施例中的微型发光二极管20转移方法，因此，本申请的显示装置100制造速度非常快，适合量产。\n\n[0079]以上对本申请实施例提供的微型发光二极管转移装置、转移方法及显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10750, 23804, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示装置。\n\n背景技术\n\n[0002]随着显示技术的不断发展，在显示装置的应用中，如手机、Pad等，高屏占比的屏幕已经成为主流趋势。由于显示装置中一些功能器件如摄像头、光线传感器等的采光需求，显示装置的屏幕难以实现最佳的屏占比。\n\n[0003]目前实现高屏占比的技术主要包括收窄边框、以及采用刘海屏、水滴屏或挖孔屏方案，这将牺牲部分屏幕空间且采光器件直接暴露在屏幕上，并未实现真正的全面屏。目前的现有技术也有采用升降式摄像头或滑盖方案的全面屏，但这些方案都需额外增加模组结构或增加设备厚度，且成本较高。故，有必要改善这一缺陷。\n\n发明内容\n\n[0004]本发明实施例提供一种显示装置，用于解决现有技术的显示装置牺牲部分屏幕空间或额外增加模组结构，导致生产成本较高以及产品厚度增加带来的用户体验下降的技术问题。\n\n[0005]本发明实施例提供一种显示装置，包括背光模组、以及设置于所述背光模组上的显示模组。所述背光模组开设有第一通孔，所述第一通孔内设置有采光构件，所述第一通孔的最大横截面对应于所述显示装置的采光区。所述采光区内还设置有第一光源以及导光构件，所述第一光源和所述导光构件均环绕所述采光构件设置。其中，当所述采光构件不工作时，所述第一光源为开启状态；当所述采光构件工作时，所述第一光源为关闭状态，且所述显示装置的采光区的透过率大于所述显示装置的非采光区的透过率。\n\n[0006]进一步的，所述显示模组包括显示面板、以及设置于所述显示面板两侧的上偏光片和下偏光片；所述显示面板包括对盒设置的阵列基板和彩膜基板、以及设置于所述阵列基板和所述彩膜基板之间的液晶层。\n\n[0007]进一步的，所述阵列基板对应于采光区的金属走线的宽度小于所述阵列基板对应于非采光区的金属走线的宽度。\n\n[0008]进一步的，所述阵列基板对应于采光区的薄膜晶体管的分布密度小于所述阵列基板对应于非采光区的薄膜晶体管的分布密度。\n\n[0009]进一步的，所述彩膜基板对应于采光区的色阻的分布密度小于所述彩膜基板对应于非采光区的色阻的分布密度。\n\n[0010]进一步的，所述彩膜基板对应于采光区的色阻的分布密度为所述彩膜基板对应于非采光区的色阻的分布密度的二分之一或四分之一。\n\n[0011]进一步的，所述彩膜基板对应于采光区不设置色阻，且所述第一光源由红色迷你LED、绿色迷你LED以及蓝色迷你LED组成。\n\n[0012]进一步的，所述背光模组包括光学膜片组以及设置于所述光学膜片组上的第二光源，所述第二光源位于所述显示装置的非采光区内；所述光学膜片组包括第一光学膜片、设置于所述第一光学膜片上的第二光学膜片以及设置于所述第二光学膜片上的第三光学膜片。\n\n[0013]进一步的，所述第二光源为迷你LED组，所述迷你LED组设置于所述第一光学膜片与所述第二光学膜片之间。\n\n[0014]进一步的，所述第二光源为LED灯条组，所述LED灯条组设置于所述第一光学膜片远离所述采光构件的一侧，且所述光学膜片组与所述导光构件之间设置有阻隔层。\n\n[0015]有益效果：本发明实施例提供的一种显示装置，通过将采光构件设置在显示模组下方，将显示装置根据采光器件对应位置分为采光区与非采光区，采光构件不工作时无需采光，显示装置的全屏幕正常显示；需采光时，采光区转变为高透光状态让光透过，实现采光，采光构件正常工作，实现了真正意义上的全面屏显示。\n\n附图说明\n\n[0016]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0017]图1是本发明实施例提供的显示装置的一结构示意图。\n\n[0018]图2是本发明实施例提供的彩膜基板对应于非采光区的色阻排布示意图。\n\n[0019]图3a是本发明实施例一提供的彩膜基板对应于采光区的色阻排布示意图。\n\n[0020]图3b是本发明实施例一提供的显示面板对应于采光区的部分结构示意图。\n\n[0021]图4是本发明实施例二提供的彩膜基板对应于采光区的色阻排布示意图。\n\n[0022]图5是本发明实施例三提供的彩膜基板对应于采光区的色阻排布示意图。\n\n[0023]图6是本发明实施例四提供的彩膜基板对应于采光区的色阻排布示意图。\n\n[0024]图7是本发明实施例五提供的彩膜基板对应于采光区的色阻排布示意图。\n\n[0025]图8是本发明实施例六提供的彩膜基板对应于采光区的色阻排布示意图。\n\n[0026]图9是本发明实施例提供的显示装置的又一结构示意图。\n\n具体实施方式\n\n[0027]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0028]如图1所示，本发明实施例提供的显示装置的一结构示意图，从图中可以很直观地看到本发明的各组成部分，以及各组成部分之间的相对位置关系，所述显示装置包括背光模组101、以及设置于所述背光模组101上的显示模组102。所述背光模组101开设有第一通孔103，所述第一通孔103内设置有采光构件104，所述第一通孔103的最大横截面对应于所述显示装置的采光区A1。所述采光区A1内还设置有第一光源105以及导光构件106，所述第一光源105和所述导光构件106均环绕所述采光构件104设置。其中，当所述采光构件104不工作时，所述第一光源105为开启状态；当所述采光构件104工作时，所述第一光源105为关闭状态，且所述显示装置的采光区A1的透过率大于所述显示装置的非采光区A2的透过率。\n\n[0029]需要说明的是，本发明实施例提供的显示装置，通过将背光模组101挖孔，将采光构件104，例如摄像头、光传感器等设置在孔内，即隐藏在显示模组102的下方，当采光构件104不工作时，打开第一光源105，所述第一光源105发出的光通过导光构件106可投射至所述显示模组102对应的采光区A1，显示装置的全屏均可以正常显示；当采光构件104需要采光时，将所述第一光源105关闭，通过控制电压调整液晶方向，使所述采光区A1转变为高透光状态，此时整个面板具有较高的光透过率，由于所述第一光源105已关闭，显示装置自身的光源不会对采光构件104造成影响，此时外界光线能够通过采光区A1入射至采光构件104，此时所述采光构件104能够正常工作，可实现真正意义上的全面屏，解决了现有技术需要将显示面板挖孔导致屏占比达不到100％，以及采用升降摄像头或滑盖的方案带来的成本上升的技术问题。\n\n[0030]需要说明的是，本发明实施例中采光区A1的背光是通过第一光源105搭配导光构件106实现，例如迷你LED搭配导光结构或膜片，所述导光构件106为透明材料，可通过特殊的光学结构设计将所述第一光源105发出的光线会聚并均匀传导到采光区A1下方，实现为该区域提供背光。\n\n[0031]需要说明的是，本发明实施例提供的采光构件104可根据需要放置在屏幕下方任意位置，所述采光构件104对应区域即为显示装置的采光区A1，所述采光区A1对应的显示模组也包含实现正常显示所需的TFT器件、液晶和偏光片等。所述采光区A1和非采光区A2共用同种液晶、偏光片等。\n\n[0032]在一种实施例中，所述显示模组102包括显示面板1021、以及设置于所述显示面板1021两侧的上偏光片1022和下偏光片1023；所述显示面板1021包括对盒设置的阵列基板1024和彩膜基板1025、以及设置于所述阵列基板1024和所述彩膜基板1025之间的液晶层1026。\n\n[0033]在一种实施例中，所述阵列基板1024对应于采光区A1的金属走线(图中未示出)的宽度小于所述阵列基板1024对应于非采光区A2的金属走线(图中未示出)的宽度。本实施例通过缩小不透光的金属走线的宽度可提高采光区A1的透过率。\n\n[0034]在一种实施例中，所述阵列基板1024对应于采光区A1的金属走线(图中未示出)之间的间距大于所述阵列基板1024对应于非采光区A2的金属走线(图中未示出)之间的间距。本实施例通过增大不透光的金属走线之间的间距可提高采光区A1的透过率。\n\n[0035]在一种实施例中，所述阵列基板1024对应于采光区A1的黑色矩阵(图中未示出)的宽度小于所述阵列基板1024对应于非采光区A2的黑色矩阵(图中未示出)的宽度。本实施例通过缩小不透光的黑色矩阵的宽度可提高采光区A1的透过率。\n\n[0036]在一种实施例中，所述阵列基板1024对应于采光区A1的黑色矩阵(图中未示出)之间的间距大于所述阵列基板1024对应于非采光区A2的黑色矩阵(图中未示出)之间的间距。本实施例通过增大不透光的黑色矩阵之间的间距可提高采光区A1的透过率。\n\n[0037]在一种实施例中，所述阵列基板1024对应于采光区A1的薄膜晶体管(图中未示出)的分布密度小于所述阵列基板1024对应于非采光区A2的薄膜晶体管(图中未示出)的分布密度。本实施例通过适当减少薄膜晶体管的数量，即适当降低PPI可提高采光区A1的透过率。需要说明的是，阵列基板1024上对应于采光区A1的薄膜晶体管数量减少，彩膜基板1025上的色阻也同步减少。\n\n[0038]在一种实施例中，所述彩膜基板1025对应于采光区A1的色阻(图中未示出)的分布密度小于所述彩膜基板1025对应于非采光区A2的色阻(图中未示出)的分布密度。本实施例通过减小彩膜基板1025对应于采光区A1的色阻占比可提高采光区A1的透过率。\n\n[0039]需要说明的是，减少彩膜基板1025对应于采光区A1的色阻，此时对应的阵列基板1024上的薄膜晶体管不一定减少，即对应的阵列基板1024上的薄膜晶体管数量可不变，减少色阻的位置仍具有TFT器件，仍可以单独控制其亮度与灰阶(黑白显示)，当显示时，此位置可显示各种灰阶与亮度状态，类似RGBW显示，可提升面板显示的亮度。\n\n[0040]在一种实施例中，所述彩膜基板1025对应于采光区A1不设置色阻，且所述第一光源105由红色迷你LED、绿色迷你LED以及蓝色迷你LED组成。本实施例通过去除彩膜基板1025对应于采光区A1的色阻可提高采光区A1的透过率。\n\n[0041]需要说明的是，彩膜基板1025对应于采光区A1的色阻完全去除，此时彩膜基板1025的透过率会大大提升，显示装置整体的光透过率也会大大提升。彩膜基板1025对应于采光区A1无色阻，此时第一光源105(背光源)为RGB三色排列，可通过提高采光区A1内的显示面板驱动频率，显示时以FSC的方式实现采光区A1的彩色显示。\n\n[0042]需要说明的是，FSC是指场序式彩色液晶显示，是指利用一个倒相器驱动RGB背光源时序照亮，就是在同一个像素上依序的打R、G、B三种光，使眼睛产生余像效应而使三色混合，就像在持续照亮一样，可提高背光源利用率，提高显示装置亮度，降低功耗，还可实现全色显示。\n\n[0043]在一种实施例中，所述背光模组101包括光学膜片组1011以及设置于所述光学膜片组1011上的第二光源1012，所述第二光源1012位于所述显示装置的非采光区A2内；所述光学膜片组1011包括第一光学膜片1013、设置于所述第一光学膜片1013上的第二光学膜片1014以及设置于所述第二光学膜片1014上的第三光学膜片1015。需要说明的是，所述第一光学膜片1013、所述第二光学膜片1014、所述第三光学膜片1015分别实现光反射、导光和光扩散的作用。\n\n[0044]在一种实施例中，所述第二光源1012为迷你LED组，所述迷你LED组设置于所述第一光学膜片与所述第二光学膜片之间。\n\n[0045]如图2所示，本发明实施例提供的彩膜基板对应于非采光区的色阻排布示意图，所述色阻包括红色色阻201、绿色色阻202以及蓝色色阻203，所述彩膜基板对应于非采光区的色阻排布方式为条状排布，任一行均按照红色色阻、绿色色阻、蓝色色阻的顺序循环排布，任一列的色阻颜色均与其正上方的色阻颜色相同。此时所述彩膜基板对应于非采光区的透过率为A％，A为一个定值。\n\n[0046]如图3a所示，本发明实施例一提供的彩膜基板对应于采光区的色阻排布示意图，所述色阻包括红色色阻301、绿色色阻302以及蓝色色阻303，所述彩膜基板对应于采光区的色阻排布方式为条状排布，任一行均按照绿色色阻、红色色阻、蓝色色阻的顺序循环排布，且色阻与色阻之间具有一个色阻宽度的间距；任一列的色阻颜色均与其正上方的色阻颜色相同，且色阻与色阻之间具有一个色阻高度的间距，即所述彩膜基板对应于采光区的色阻的分布密度为所述彩膜基板对应于非采光区的色阻的分布密度的二分之一。此时所述彩膜基板对应于采光区的透过率为A％*50％+100％*(1-50％)，A为一个定值。\n\n[0047]需要说明的是，有色阻的区域占整个采光区的50％，去除色阻的区域占整个采光区的(1-50％)，假设背光的亮度为一个单位，则有50％单位的光穿过透过率为A％的区域，有(1-50％)单位的光穿过透过率为100％(去除色阻之后对应透过率为100％)的区域，最后加总起来A％*50％+100％*(1-50％)就是全部穿过去的亮度，而，穿过去的亮度/原始亮度(1单位)即是总体透过率。\n\n[0048]具体地，假设A为70，则非采光区对应的透过率为70％，采光区对应的透过率为70％*50％+100％*(1-50％)为85％，即显示装置的整体透过率大大提升。\n\n[0049]如图3b所示，本发明实施例一提供的显示面板对应于采光区的部分结构示意图，所述显示面板包括阵列基板和彩膜基板，所述彩膜基板对应于采光区的色阻排布与图3a的一致，即去除掉二分之一的色阻，其中去除色阻的区域304对应阵列基板上的TFT器件305仍然保留，此时去除色阻的区域304仍可以单独控制其亮度与灰阶(黑白显示)，当采光构件不工作(即正常显示)时，此区域304可显示各种灰阶与亮度状态，类似RGBW显示。当采光构件工作时，此区域304通过驱动芯片控制电压，使液晶翻转，使采光区转变为高透光状态，提升显示装置的整体透过率。\n\n[0050]如图4所示，本发明实施例二提供的彩膜基板对应于采光区的色阻排布示意图，所述色阻包括红色色阻401、绿色色阻402以及蓝色色阻403，所述彩膜基板对应于采光区的色阻排布方式为条状排布，奇数行(或偶数行)均按照红色色阻、绿色色阻、蓝色色阻的顺序循环排布；任一列的色阻颜色均与其正上方的色阻颜色相同，且色阻与色阻之间具有一个色阻高度的间距，即所述彩膜基板对应于采光区的色阻的分布密度为所述彩膜基板对应于非采光区的色阻的分布密度的二分之一。此时所述彩膜基板对应于采光区的透过率为A％*50％+100％*(1-50％)，A为一个定值，此公式说明与图3a的公式一致，此处不再赘述。\n\n[0051]如图5所示，本发明实施例三提供的彩膜基板对应于采光区的色阻排布示意图，所述色阻包括红色色阻501、绿色色阻502以及蓝色色阻503，所述彩膜基板对应于采光区的色阻排布方式为条状排布，其中，红色色阻、绿色色阻以及蓝色色阻为第一循环子单元，去除红色色阻、绿色色阻以及蓝色色阻的区域504为第二循环子单元，任一行均按照第一循环子单元、第二循环子单元的顺序循环排布，也可以说第一循环子单元与第一循环子单元之间的间距为三个色阻的宽度；任一列的色阻颜色均与其正上方的色阻颜色相同，且色阻与色阻之间具有一个色阻高度的间距，即所述彩膜基板对应于采光区的色阻的分布密度为所述彩膜基板对应于非采光区的色阻的分布密度的二分之一。此时所述彩膜基板对应于采光区的透过率为A％*50％+100％*(1-50％)，A为一个定值，此公式说明与图3a的公式一致，此处不再赘述。\n\n[0052]如图6所示，本发明实施例四提供的彩膜基板对应于采光区的色阻排布示意图，所述色阻包括红色色阻601、绿色色阻602以及蓝色色阻603，所述彩膜基板对应于采光区的色阻排布方式为条状排布，任一行均按照绿色色阻、红色色阻、蓝色色阻的顺序循环排布，且色阻与色阻之间具有三个色阻宽度的间距；任一列的色阻颜色均与其正上方的色阻颜色相同，且色阻与色阻之间具有一个色阻高度的间距，即所述彩膜基板对应于采光区的色阻的分布密度为所述彩膜基板对应于非采光区的色阻的分布密度的四分之一。此时所述彩膜基板对应于采光区的透过率为A％*25％+100％*(1-25％)，A为一个定值。\n\n[0053]需要说明的是，有色阻的区域占整个采光区的25％，去除色阻的区域占整个采光区的(1-25％)，假设背光的亮度为一个单位，则有25％单位的光穿过透过率为A％的区域，有(1-25％)单位的光穿过透过率为100％(去除色阻之后对应透过率为100％)的区域，最后加总起来A％*25％+100％*(1-25％)就是全部穿过去的亮度，而，穿过去的亮度/原始亮度(1单位)即是总体透过率。\n\n[0054]具体地，假设A为70，则非采光区对应的透过率为70％，采光区对应的透过率为70％*25％+100％*(1-25％)为92.5％，即显示装置的整体透过率大大提升。\n\n[0055]如图7所示，本发明实施例五提供的彩膜基板对应于采光区的色阻排布示意图，所述色阻包括红色色阻701、绿色色阻702以及蓝色色阻703，所述彩膜基板对应于采光区的色阻排布方式为条状排布，其中，红色色阻、绿色色阻以及蓝色色阻为第一循环子单元，去除红色色阻、绿色色阻以及蓝色色阻的区域704为第二循环子单元，奇数行(或偶数行)均按照第一循环子单元、第二循环子单元的顺序循环排布，也可以说第一循环子单元与第一循环子单元之间的间距为三个色阻的宽度；任一列的色阻颜色均与其正上方的色阻颜色相同，且色阻与色阻之间具有一个色阻高度的间距，即所述彩膜基板对应于采光区的色阻的分布密度为所述彩膜基板对应于非采光区的色阻的分布密度的四分之一。此时所述彩膜基板对应于采光区的透过率为A％*25％+100％*(1-25％)，A为一个定值，此公式说明与图6的公式一致，此处不再赘述。\n\n[0056]如图8所示，本发明实施例六提供的彩膜基板对应于采光区的色阻排布示意图，所述色阻包括红色色阻801、绿色色阻802以及蓝色色阻803，所述彩膜基板对应于采光区的色阻排布方式为条状排布，其中，红色色阻、绿色色阻以及蓝色色阻为第一循环子单元，去除红色色阻、绿色色阻以及蓝色色阻的区域804为第二循环子单元，任一行均按照第一循环子单元、第二循环子单元、第二循环子单元、第二循环子单元的顺序循环排布，也可以说第一循环子单元与第一循环子单元之间的间距为九个色阻的宽度；任一列的色阻颜色均与其正上方的色阻颜色相同，且色阻与色阻之间具有一个色阻高度的间距，即所述彩膜基板对应于采光区的色阻的分布密度为所述彩膜基板对应于非采光区的色阻的分布密度的四分之一。此时所述彩膜基板对应于采光区的透过率为A％*25％+100％*(1-25％)，A为一个定值，此公式说明与图6的公式一致，此处不再赘述。\n\n[0057]本发明实施例还提供一种同时对阵列基板和彩膜基板进行改进的实施例，即减小阵列基板对应于采光区的不透光金属线的宽度的同时，减小彩膜基板对应于采光区的色阻占比，即通过同时提升阵列基板和彩膜基板的透过率，从而提升采光区整体透过率，以满足采光构件的采光需求。\n\n[0058]如图9所示，本发明实施例提供的显示装置的又一结构示意图，从图中可以很直观地看到本发明的各组成部分，以及各组成部分之间的相对位置关系，所述显示装置包括背光模组901、以及设置于所述背光模组901上的显示模组902。所述背光模组901开设有第一通孔903，所述第一通孔903内设置有采光构件904，所述第一通孔903的最大横截面对应于所述显示装置的采光区A1。所述采光区A1内还设置有第一光源905以及导光构件906，所述第一光源905和所述导光构件906均环绕所述采光构件904设置。其中，当所述采光构件904不工作时，所述第一光源905为开启状态；当所述采光构件904工作时，所述第一光源905为关闭状态，且所述显示装置的采光区A1的透过率大于所述显示装置的非采光区A2的透过率。\n\n[0059]其中，所述背光模组901包括光学膜片组9011以及设置于所述光学膜片组9011上的第二光源9012，所述第二光源9012位于所述显示装置的非采光区A2内；所述光学膜片组9011包括第一光学膜片9013、设置于所述第一光学膜片9013上的第二光学膜片9014以及设置于所述第二光学膜片9014上的第三光学膜片9015。需要说明的是，所述第一光学膜片9013、所述第二光学膜片9014、所述第三光学膜片9015分别实现光反射、导光和光扩散的作用。\n\n[0060]具体地，所述第二光源9012为LED灯条组，所述LED灯条组设置于所述第一光学膜片9013远离所述采光构件904的一侧，且所述光学膜片组9011与所述导光构件906之间设置有阻隔层907。\n\n[0061]需要说明的是，本实施例中，非采光区A2的背光采用了常规侧边LED灯条搭配相应光学膜片的方式实现，而采光区A1的背光依然使用迷你LED搭配导光构件906实现，采光区A1的导光构件906的外侧添加了阻隔层907，所述阻隔层907为阻光光学设计，如阻光光学膜片(BM)、阻光光学涂层等，是为了防止采光构件正常工作时，非采光区A2的背光(第二光源9012)影响采光构件的工作，在本实施例中，非采光区A2采用了常规的LED背光方案，更有利于实现量产。\n\n[0062]在一种实施例中，所述显示模组902包括显示面板9021、以及设置于所述显示面板9021两侧的上偏光片9022和下偏光片9023；所述显示面板9021包括对盒设置的阵列基板9024和彩膜基板9025、以及设置于所述阵列基板9024和所述彩膜基板9025之间的液晶层9026。其中，关于阵列基板9024和彩膜基板9025的透过率改进实施例与图3a至图8的实施方式一致，此处不再赘述。\n\n[0063]本发明实施例提供的显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相机、导航仪等任何具有显示功能的产品或部件。\n\n[0064]综上所述，本发明实施例提供的一种显示装置，通过将采光构件设置在显示模组下方，将显示装置根据采光器件对应位置分为采光区与非采光区，采光构件不工作时无需采光，显示装置的全屏幕正常显示；需采光时，采光区转变为高透光状态让光透过，实现采光，采光构件正常工作，实现了真正意义上的全面屏显示，解决了现有技术的显示装置牺牲部分屏幕空间或额外增加模组结构，导致生产成本较高以及产品厚度增加带来的用户体验下降的技术问题。\n\n[0065]以上对本发明实施例所提供的一种显示装置进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示装置。\n\n背景技术\n\n[0002]随着显示技术的不断发展，在显示装置的应用中，如手机、Pad等，高屏占比的屏幕已经成为主流趋势。由于显示装置中一些功能器件如摄像头、光线传感器等的采光需求，显示装置的屏幕难以实现最佳的屏占比。\n\n[0003]目前实现高屏占比的技术主要包括收窄边框、以及采用刘海屏、水滴屏或挖孔屏方案，这将牺牲部分屏幕空间且采光器件直接暴露在屏幕上，并未实现真正的全面屏。目前的现有技术也有采用升降式摄像头或滑盖方案的全面屏，但这些方案都需额外增加模组结构或增加设备厚度，且成本较高。故，有必要改善这一缺陷。\n\n发明内容\n\n[0004]本发明实施例提供一种显示装置，用于解决现有技术的显示装置牺牲部分屏幕空间或额外增加模组结构，导致生产成本较高以及产品厚度增加带来的用户体验下降的技术问题。\n\n[0005]本发明实施例提供一种显示装置，包括背光模组、以及设置于所述背光模组上的显示模组。所述背光模组开设有第一通孔，所述第一通孔内设置有采光构件，所述第一通孔的最大横截面对应于所述显示装置的采光区。所述采光区内还设置有第一光源以及导光构件，所述第一光源和所述导光构件均环绕所述采光构件设置。其中，当所述采光构件不工作时，所述第一光源为开启状态；当所述采光构件工作时，所述第一光源为关闭状态，且所述显示装置的采光区的透过率大于所述显示装置的非采光区的透过率。\n\n[0006]进一步的，所述显示模组包括显示面板、以及设置于所述显示面板两侧的上偏光片和下偏光片；所述显示面板包括对盒设置的阵列基板和彩膜基板、以及设置于所述阵列基板和所述彩膜基板之间的液晶层。\n\n[0007]进一步的，所述阵列基板对应于采光区的金属走线的宽度小于所述阵列基板对应于非采光区的金属走线的宽度。\n\n[0008]进一步的，所述阵列基板对应于采光区的薄膜晶体管的分布密度小于所述阵列基板对应于非采光区的薄膜晶体管的分布密度。\n\n[0009]进一步的，所述彩膜基板对应于采光区的色阻的分布密度小于所述彩膜基板对应于非采光区的色阻的分布密度。\n\n[0010]进一步的，所述彩膜基板对应于采光区的色阻的分布密度为所述彩膜基板对应于非采光区的色阻的分布密度的二分之一或四分之一。\n\n[0011]进一步的，所述彩膜基板对应于采光区不设置色阻，且所述第一光源由红色迷你LED、绿色迷你LED以及蓝色迷你LED组成。\n\n[0012]进一步的，所述背光模组包括光学膜片组以及设置于所述光学膜片组上的第二光源，所述第二光源位于所述显示装置的非采光区内；所述光学膜片组包括第一光学膜片、设置于所述第一光学膜片上的第二光学膜片以及设置于所述第二光学膜片上的第三光学膜片。\n\n[0013]进一步的，所述第二光源为迷你LED组，所述迷你LED组设置于所述第一光学膜片与所述第二光学膜片之间。\n\n[0014]进一步的，所述第二光源为LED灯条组，所述LED灯条组设置于所述第一光学膜片远离所述采光构件的一侧，且所述光学膜片组与所述导光构件之间设置有阻隔层。\n\n[0015]有益效果：本发明实施例提供的一种显示装置，通过将采光构件设置在显示模组下方，将显示装置根据采光器件对应位置分为采光区与非采光区，采光构件不工作时无需采光，显示装置的全屏幕正常显示；需采光时，采光区转变为高透光状态让光透过，实现采光，采光构件正常工作，实现了真正意义上的全面屏显示。\n\n附图说明\n\n[0016]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0017]图1是本发明实施例提供的显示装置的一结构示意图。\n\n[0018]图2是本发明实施例提供的彩膜基板对应于非采光区的色阻排布示意图。\n\n[0019]图3a是本发明实施例一提供的彩膜基板对应于采光区的色阻排布示意图。\n\n[0020]图3b是本发明实施例一提供的显示面板对应于采光区的部分结构示意图。\n\n[0021]图4是本发明实施例二提供的彩膜基板对应于采光区的色阻排布示意图。\n\n[0022]图5是本发明实施例三提供的彩膜基板对应于采光区的色阻排布示意图。\n\n[0023]图6是本发明实施例四提供的彩膜基板对应于采光区的色阻排布示意图。\n\n[0024]图7是本发明实施例五提供的彩膜基板对应于采光区的色阻排布示意图。\n\n[0025]图8是本发明实施例六提供的彩膜基板对应于采光区的色阻排布示意图。\n\n[0026]图9是本发明实施例提供的显示装置的又一结构示意图。\n\n具体实施方式\n\n[0027]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0028]如图1所示，本发明实施例提供的显示装置的一结构示意图，从图中可以很直观地看到本发明的各组成部分，以及各组成部分之间的相对位置关系，所述显示装置包括背光模组101、以及设置于所述背光模组101上的显示模组102。所述背光模组101开设有第一通孔103，所述第一通孔103内设置有采光构件104，所述第一通孔103的最大横截面对应于所述显示装置的采光区A1。所述采光区A1内还设置有第一光源105以及导光构件106，所述第一光源105和所述导光构件106均环绕所述采光构件104设置。其中，当所述采光构件104不工作时，所述第一光源105为开启状态；当所述采光构件104工作时，所述第一光源105为关闭状态，且所述显示装置的采光区A1的透过率大于所述显示装置的非采光区A2的透过率。\n\n[0029]需要说明的是，本发明实施例提供的显示装置，通过将背光模组101挖孔，将采光构件104，例如摄像头、光传感器等设置在孔内，即隐藏在显示模组102的下方，当采光构件104不工作时，打开第一光源105，所述第一光源105发出的光通过导光构件106可投射至所述显示模组102对应的采光区A1，显示装置的全屏均可以正常显示；当采光构件104需要采光时，将所述第一光源105关闭，通过控制电压调整液晶方向，使所述采光区A1转变为高透光状态，此时整个面板具有较高的光透过率，由于所述第一光源105已关闭，显示装置自身的光源不会对采光构件104造成影响，此时外界光线能够通过采光区A1入射至采光构件104，此时所述采光构件104能够正常工作，可实现真正意义上的全面屏，解决了现有技术需要将显示面板挖孔导致屏占比达不到100％，以及采用升降摄像头或滑盖的方案带来的成本上升的技术问题。\n\n[0030]需要说明的是，本发明实施例中采光区A1的背光是通过第一光源105搭配导光构件106实现，例如迷你LED搭配导光结构或膜片，所述导光构件106为透明材料，可通过特殊的光学结构设计将所述第一光源105发出的光线会聚并均匀传导到采光区A1下方，实现为该区域提供背光。\n\n[0031]需要说明的是，本发明实施例提供的采光构件104可根据需要放置在屏幕下方任意位置，所述采光构件104对应区域即为显示装置的采光区A1，所述采光区A1对应的显示模组也包含实现正常显示所需的TFT器件、液晶和偏光片等。所述采光区A1和非采光区A2共用同种液晶、偏光片等。\n\n[0032]在一种实施例中，所述显示模组102包括显示面板1021、以及设置于所述显示面板1021两侧的上偏光片1022和下偏光片1023；所述显示面板1021包括对盒设置的阵列基板1024和彩膜基板1025、以及设置于所述阵列基板1024和所述彩膜基板1025之间的液晶层1026。\n\n[0033]在一种实施例中，所述阵列基板1024对应于采光区A1的金属走线(图中未示出)的宽度小于所述阵列基板1024对应于非采光区A2的金属走线(图中未示出)的宽度。本实施例通过缩小不透光的金属走线的宽度可提高采光区A1的透过率。\n\n[0034]在一种实施例中，所述阵列基板1024对应于采光区A1的金属走线(图中未示出)之间的间距大于所述阵列基板1024对应于非采光区A2的金属走线(图中未示出)之间的间距。本实施例通过增大不透光的金属走线之间的间距可提高采光区A1的透过率。\n\n[0035]在一种实施例中，所述阵列基板1024对应于采光区A1的黑色矩阵(图中未示出)的宽度小于所述阵列基板1024对应于非采光区A2的黑色矩阵(图中未示出)的宽度。本实施例通过缩小不透光的黑色矩阵的宽度可提高采光区A1的透过率。\n\n[0036]在一种实施例中，所述阵列基板1024对应于采光区A1的黑色矩阵(图中未示出)之间的间距大于所述阵列基板1024对应于非采光区A2的黑色矩阵(图中未示出)之间的间距。本实施例通过增大不透光的黑色矩阵之间的间距可提高采光区A1的透过率。\n\n[0037]在一种实施例中，所述阵列基板1024对应于采光区A1的薄膜晶体管(图中未示出)的分布密度小于所述阵列基板1024对应于非采光区A2的薄膜晶体管(图中未示出)的分布密度。本实施例通过适当减少薄膜晶体管的数量，即适当降低PPI可提高采光区A1的透过率。需要说明的是，阵列基板1024上对应于采光区A1的薄膜晶体管数量减少，彩膜基板1025上的色阻也同步减少。\n\n[0038]在一种实施例中，所述彩膜基板1025对应于采光区A1的色阻(图中未示出)的分布密度小于所述彩膜基板1025对应于非采光区A2的色阻(图中未示出)的分布密度。本实施例通过减小彩膜基板1025对应于采光区A1的色阻占比可提高采光区A1的透过率。\n\n[0039]需要说明的是，减少彩膜基板1025对应于采光区A1的色阻，此时对应的阵列基板1024上的薄膜晶体管不一定减少，即对应的阵列基板1024上的薄膜晶体管数量可不变，减少色阻的位置仍具有TFT器件，仍可以单独控制其亮度与灰阶(黑白显示)，当显示时，此位置可显示各种灰阶与亮度状态，类似RGBW显示，可提升面板显示的亮度。\n\n[0040]在一种实施例中，所述彩膜基板1025对应于采光区A1不设置色阻，且所述第一光源105由红色迷你LED、绿色迷你LED以及蓝色迷你LED组成。本实施例通过去除彩膜基板1025对应于采光区A1的色阻可提高采光区A1的透过率。\n\n[0041]需要说明的是，彩膜基板1025对应于采光区A1的色阻完全去除，此时彩膜基板1025的透过率会大大提升，显示装置整体的光透过率也会大大提升。彩膜基板1025对应于采光区A1无色阻，此时第一光源105(背光源)为RGB三色排列，可通过提高采光区A1内的显示面板驱动频率，显示时以FSC的方式实现采光区A1的彩色显示。\n\n[0042]需要说明的是，FSC是指场序式彩色液晶显示，是指利用一个倒相器驱动RGB背光源时序照亮，就是在同一个像素上依序的打R、G、B三种光，使眼睛产生余像效应而使三色混合，就像在持续照亮一样，可提高背光源利用率，提高显示装置亮度，降低功耗，还可实现全色显示。\n\n[0043]在一种实施例中，所述背光模组101包括光学膜片组1011以及设置于所述光学膜片组1011上的第二光源1012，所述第二光源1012位于所述显示装置的非采光区A2内；所述光学膜片组1011包括第一光学膜片1013、设置于所述第一光学膜片1013上的第二光学膜片1014以及设置于所述第二光学膜片1014上的第三光学膜片1015。需要说明的是，所述第一光学膜片1013、所述第二光学膜片1014、所述第三光学膜片1015分别实现光反射、导光和光扩散的作用。\n\n[0044]在一种实施例中，所述第二光源1012为迷你LED组，所述迷你LED组设置于所述第一光学膜片与所述第二光学膜片之间。\n\n[0045]如图2所示，本发明实施例提供的彩膜基板对应于非采光区的色阻排布示意图，所述色阻包括红色色阻201、绿色色阻202以及蓝色色阻203，所述彩膜基板对应于非采光区的色阻排布方式为条状排布，任一行均按照红色色阻、绿色色阻、蓝色色阻的顺序循环排布，任一列的色阻颜色均与其正上方的色阻颜色相同。此时所述彩膜基板对应于非采光区的透过率为A％，A为一个定值。\n\n[0046]如图3a所示，本发明实施例一提供的彩膜基板对应于采光区的色阻排布示意图，所述色阻包括红色色阻301、绿色色阻302以及蓝色色阻303，所述彩膜基板对应于采光区的色阻排布方式为条状排布，任一行均按照绿色色阻、红色色阻、蓝色色阻的顺序循环排布，且色阻与色阻之间具有一个色阻宽度的间距；任一列的色阻颜色均与其正上方的色阻颜色相同，且色阻与色阻之间具有一个色阻高度的间距，即所述彩膜基板对应于采光区的色阻的分布密度为所述彩膜基板对应于非采光区的色阻的分布密度的二分之一。此时所述彩膜基板对应于采光区的透过率为A％*50％+100％*(1-50％)，A为一个定值。\n\n[0047]需要说明的是，有色阻的区域占整个采光区的50％，去除色阻的区域占整个采光区的(1-50％)，假设背光的亮度为一个单位，则有50％单位的光穿过透过率为A％的区域，有(1-50％)单位的光穿过透过率为100％(去除色阻之后对应透过率为100％)的区域，最后加总起来A％*50％+100％*(1-50％)就是全部穿过去的亮度，而，穿过去的亮度/原始亮度(1单位)即是总体透过率。\n\n[0048]具体地，假设A为70，则非采光区对应的透过率为70％，采光区对应的透过率为70％*50％+100％*(1-50％)为85％，即显示装置的整体透过率大大提升。\n\n[0049]如图3b所示，本发明实施例一提供的显示面板对应于采光区的部分结构示意图，所述显示面板包括阵列基板和彩膜基板，所述彩膜基板对应于采光区的色阻排布与图3a的一致，即去除掉二分之一的色阻，其中去除色阻的区域304对应阵列基板上的TFT器件305仍然保留，此时去除色阻的区域304仍可以单独控制其亮度与灰阶(黑白显示)，当采光构件不工作(即正常显示)时，此区域304可显示各种灰阶与亮度状态，类似RGBW显示。当采光构件工作时，此区域304通过驱动芯片控制电压，使液晶翻转，使采光区转变为高透光状态，提升显示装置的整体透过率。\n\n[0050]如图4所示，本发明实施例二提供的彩膜基板对应于采光区的色阻排布示意图，所述色阻包括红色色阻401、绿色色阻402以及蓝色色阻403，所述彩膜基板对应于采光区的色阻排布方式为条状排布，奇数行(或偶数行)均按照红色色阻、绿色色阻、蓝色色阻的顺序循环排布；任一列的色阻颜色均与其正上方的色阻颜色相同，且色阻与色阻之间具有一个色阻高度的间距，即所述彩膜基板对应于采光区的色阻的分布密度为所述彩膜基板对应于非采光区的色阻的分布密度的二分之一。此时所述彩膜基板对应于采光区的透过率为A％*50％+100％*(1-50％)，A为一个定值，此公式说明与图3a的公式一致，此处不再赘述。\n\n[0051]如图5所示，本发明实施例三提供的彩膜基板对应于采光区的色阻排布示意图，所述色阻包括红色色阻501、绿色色阻502以及蓝色色阻503，所述彩膜基板对应于采光区的色阻排布方式为条状排布，其中，红色色阻、绿色色阻以及蓝色色阻为第一循环子单元，去除红色色阻、绿色色阻以及蓝色色阻的区域504为第二循环子单元，任一行均按照第一循环子单元、第二循环子单元的顺序循环排布，也可以说第一循环子单元与第一循环子单元之间的间距为三个色阻的宽度；任一列的色阻颜色均与其正上方的色阻颜色相同，且色阻与色阻之间具有一个色阻高度的间距，即所述彩膜基板对应于采光区的色阻的分布密度为所述彩膜基板对应于非采光区的色阻的分布密度的二分之一。此时所述彩膜基板对应于采光区的透过率为A％*50％+100％*(1-50％)，A为一个定值，此公式说明与图3a的公式一致，此处不再赘述。\n\n[0052]如图6所示，本发明实施例四提供的彩膜基板对应于采光区的色阻排布示意图，所述色阻包括红色色阻601、绿色色阻602以及蓝色色阻603，所述彩膜基板对应于采光区的色阻排布方式为条状排布，任一行均按照绿色色阻、红色色阻、蓝色色阻的顺序循环排布，且色阻与色阻之间具有三个色阻宽度的间距；任一列的色阻颜色均与其正上方的色阻颜色相同，且色阻与色阻之间具有一个色阻高度的间距，即所述彩膜基板对应于采光区的色阻的分布密度为所述彩膜基板对应于非采光区的色阻的分布密度的四分之一。此时所述彩膜基板对应于采光区的透过率为A％*25％+100％*(1-25％)，A为一个定值。\n\n[0053]需要说明的是，有色阻的区域占整个采光区的25％，去除色阻的区域占整个采光区的(1-25％)，假设背光的亮度为一个单位，则有25％单位的光穿过透过率为A％的区域，有(1-25％)单位的光穿过透过率为100％(去除色阻之后对应透过率为100％)的区域，最后加总起来A％*25％+100％*(1-25％)就是全部穿过去的亮度，而，穿过去的亮度/原始亮度(1单位)即是总体透过率。\n\n[0054]具体地，假设A为70，则非采光区对应的透过率为70％，采光区对应的透过率为70％*25％+100％*(1-25％)为92.5％，即显示装置的整体透过率大大提升。\n\n[0055]如图7所示，本发明实施例五提供的彩膜基板对应于采光区的色阻排布示意图，所述色阻包括红色色阻701、绿色色阻702以及蓝色色阻703，所述彩膜基板对应于采光区的色阻排布方式为条状排布，其中，红色色阻、绿色色阻以及蓝色色阻为第一循环子单元，去除红色色阻、绿色色阻以及蓝色色阻的区域704为第二循环子单元，奇数行(或偶数行)均按照第一循环子单元、第二循环子单元的顺序循环排布，也可以说第一循环子单元与第一循环子单元之间的间距为三个色阻的宽度；任一列的色阻颜色均与其正上方的色阻颜色相同，且色阻与色阻之间具有一个色阻高度的间距，即所述彩膜基板对应于采光区的色阻的分布密度为所述彩膜基板对应于非采光区的色阻的分布密度的四分之一。此时所述彩膜基板对应于采光区的透过率为A％*25％+100％*(1-25％)，A为一个定值，此公式说明与图6的公式一致，此处不再赘述。\n\n[0056]如图8所示，本发明实施例六提供的彩膜基板对应于采光区的色阻排布示意图，所述色阻包括红色色阻801、绿色色阻802以及蓝色色阻803，所述彩膜基板对应于采光区的色阻排布方式为条状排布，其中，红色色阻、绿色色阻以及蓝色色阻为第一循环子单元，去除红色色阻、绿色色阻以及蓝色色阻的区域804为第二循环子单元，任一行均按照第一循环子单元、第二循环子单元、第二循环子单元、第二循环子单元的顺序循环排布，也可以说第一循环子单元与第一循环子单元之间的间距为九个色阻的宽度；任一列的色阻颜色均与其正上方的色阻颜色相同，且色阻与色阻之间具有一个色阻高度的间距，即所述彩膜基板对应于采光区的色阻的分布密度为所述彩膜基板对应于非采光区的色阻的分布密度的四分之一。此时所述彩膜基板对应于采光区的透过率为A％*25％+100％*(1-25％)，A为一个定值，此公式说明与图6的公式一致，此处不再赘述。\n\n[0057]本发明实施例还提供一种同时对阵列基板和彩膜基板进行改进的实施例，即减小阵列基板对应于采光区的不透光金属线的宽度的同时，减小彩膜基板对应于采光区的色阻占比，即通过同时提升阵列基板和彩膜基板的透过率，从而提升采光区整体透过率，以满足采光构件的采光需求。\n\n[0058]如图9所示，本发明实施例提供的显示装置的又一结构示意图，从图中可以很直观地看到本发明的各组成部分，以及各组成部分之间的相对位置关系，所述显示装置包括背光模组901、以及设置于所述背光模组901上的显示模组902。所述背光模组901开设有第一通孔903，所述第一通孔903内设置有采光构件904，所述第一通孔903的最大横截面对应于所述显示装置的采光区A1。所述采光区A1内还设置有第一光源905以及导光构件906，所述第一光源905和所述导光构件906均环绕所述采光构件904设置。其中，当所述采光构件904不工作时，所述第一光源905为开启状态；当所述采光构件904工作时，所述第一光源905为关闭状态，且所述显示装置的采光区A1的透过率大于所述显示装置的非采光区A2的透过率。\n\n[0059]其中，所述背光模组901包括光学膜片组9011以及设置于所述光学膜片组9011上的第二光源9012，所述第二光源9012位于所述显示装置的非采光区A2内；所述光学膜片组9011包括第一光学膜片9013、设置于所述第一光学膜片9013上的第二光学膜片9014以及设置于所述第二光学膜片9014上的第三光学膜片9015。需要说明的是，所述第一光学膜片9013、所述第二光学膜片9014、所述第三光学膜片9015分别实现光反射、导光和光扩散的作用。\n\n[0060]具体地，所述第二光源9012为LED灯条组，所述LED灯条组设置于所述第一光学膜片9013远离所述采光构件904的一侧，且所述光学膜片组9011与所述导光构件906之间设置有阻隔层907。\n\n[0061]需要说明的是，本实施例中，非采光区A2的背光采用了常规侧边LED灯条搭配相应光学膜片的方式实现，而采光区A1的背光依然使用迷你LED搭配导光构件906实现，采光区A1的导光构件906的外侧添加了阻隔层907，所述阻隔层907为阻光光学设计，如阻光光学膜片(BM)、阻光光学涂层等，是为了防止采光构件正常工作时，非采光区A2的背光(第二光源9012)影响采光构件的工作，在本实施例中，非采光区A2采用了常规的LED背光方案，更有利于实现量产。\n\n[0062]在一种实施例中，所述显示模组902包括显示面板9021、以及设置于所述显示面板9021两侧的上偏光片9022和下偏光片9023；所述显示面板9021包括对盒设置的阵列基板9024和彩膜基板9025、以及设置于所述阵列基板9024和所述彩膜基板9025之间的液晶层9026。其中，关于阵列基板9024和彩膜基板9025的透过率改进实施例与图3a至图8的实施方式一致，此处不再赘述。\n\n[0063]本发明实施例提供的显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相机、导航仪等任何具有显示功能的产品或部件。\n\n[0064]综上所述，本发明实施例提供的一种显示装置，通过将采光构件设置在显示模组下方，将显示装置根据采光器件对应位置分为采光区与非采光区，采光构件不工作时无需采光，显示装置的全屏幕正常显示；需采光时，采光区转变为高透光状态让光透过，实现采光，采光构件正常工作，实现了真正意义上的全面屏显示，解决了现有技术的显示装置牺牲部分屏幕空间或额外增加模组结构，导致生产成本较高以及产品厚度增加带来的用户体验下降的技术问题。\n\n[0065]以上对本发明实施例所提供的一种显示装置进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。');
INSERT INTO `os_patent_instruction_text` VALUES (10751, 23805, '技术领域\n\n[0001]本发明涉及背光驱动技术领域，更为具体来说，本发明为一种背光源驱动方法、背光源驱动电路及背光源驱动装置。\n\n背景技术\n\n[0002]作为背光源的迷你发光二极管(miniLED)的常规驱动方案是：基于各独立的器件构成驱动线路，具体驱动方法为在行驱动和列驱动的方式下分别控制各个驱动线路的工作状态，利用薄膜晶体管(TFT，Thin Film Transistor)的特性驱动玻璃基板上的迷你发光二极管，从而实现了对迷你发光二极管的亮度控制，如说明书附图的图3所示。\n\n[0003]但是，常规的背光源驱动方案中的驱动线路往往会随着迷你发光二极管的数量和密度的增加而明显地增多，过多的驱动线路导致驱动策略变得过于复杂，诸多的驱动线路中必然包含大量的独立器件，大量的独立器件导致驱动板占用更多的空间，更多的空间占用和更复杂的驱动策略导致了背光源最终的驱动成本非常高。\n\n[0004]因此，如何优化背光源驱动策略、简化背光源驱动线路，进而有效地降低背光源驱动的投入成本，成为了本领域技术人员亟待解决的技术问题和始终研究的重点。\n\n发明内容\n\n[0005]为解决现有背光源驱动方案存在的驱动策略过于复杂、驱动线路占用空间过大导致的背光源驱动方案成本过高的问题，本发明创新提供了一种背光源驱动方法、背光源驱动电路及背光源驱动装置，从背光源驱动策略、背光源驱动模组的结构两方面解决了常规的驱动线路过多导致的背光源驱动板空间占用过大、背光源驱动策略过于复杂及可靠性较差等问题。\n\n[0006]为实现上述的技术目的，本发明提供了一种背光源驱动方法，该方法包括第一驱动信号处理步骤、第二驱动信号处理步骤及背光源驱动步骤；其中，\n\n[0007]第一驱动信号处理步骤包括：\n\n[0008]步骤10，将第一驱动信号解码为第一TTL电平信号；\n\n[0009]步骤11，通过对所述第一TTL电平信号进行寄存处理的方式将所述第一TTL电平信号调整为第一同步信号；\n\n[0010]步骤12，通过对所述第一同步信号进行电平转换处理的方式将所述第一同步信号转换为第一控制信号；\n\n[0011]第二驱动信号处理步骤包括：\n\n[0012]步骤20，将第二驱动信号解码为第二TTL电平信号；\n\n[0013]步骤21，通过对所述第二TTL电平信号进行寄存处理的方式将所述第二TTL电平信号调整为第二同步信号；\n\n[0014]步骤22，通过对所述第二同步信号进行电平转换处理的方式将所述第二同步信号转换为第二控制信号；\n\n[0015]步骤23，通过对所述第二控制信号进行数模转换处理的方式将所述第二控制信号转换为第三控制信号；\n\n[0016]背光源驱动步骤包括：利用所述第一控制信号和所述第三控制信号对背光源进行驱动。\n\n[0017]进一步地，所述方法还包括如下步骤，在对所述第一驱动信号和所述第二驱动信号进行处理前，通过低压差分信号接口获取所述第一驱动信号和所述第二驱动信号。\n\n[0018]进一步地，在所述背光源驱动步骤中，利用所述第一控制信号和所述第三控制信号且通过子场控制方式对背光源进行驱动。\n\n[0019]进一步地，在通过子场控制方式对背光源进行驱动时，将所述第一控制信号作为背光源的有源矩阵的行驱动信号，将所述第三控制信号作为背光源的有源矩阵的列驱动信号。\n\n[0020]为实现上述的技术目的，本发明还提供了一种背光源驱动电路，该电路包括一个或至少两个相拼接的背光驱动模组，所述背光驱动模组包括第一处理模块、第二处理模块及驱动控制模块；所述第一处理模块包括第一信号解码模块、第一寄存模块及第一转换模块，所述第二处理模块包括第二信号解码模块、第二寄存模块、第二转换模块及第三转换模块；\n\n[0021]所述第一信号解码模块，用于将第一驱动信号解码为第一TTL电平信号；\n\n[0022]所述第一寄存模块，用于通过对所述第一TTL电平信号进行寄存处理的方式将所述第一TTL电平信号调整为第一同步信号；\n\n[0023]所述第一转换模块，用于通过对所述第一同步信号进行电平转换处理的方式将所述第一同步信号转换为第一控制信号；\n\n[0024]所述第二信号解码模块，用于将第二驱动信号解码为第二TTL电平信号；\n\n[0025]所述第二寄存模块，用于通过对所述第二TTL电平信号进行寄存处理的方式将所述第二TTL电平信号调整为第二同步信号；\n\n[0026]所述第二转换模块，用于通过对所述第二同步信号进行电平转换处理的方式将所述第二同步信号转换为第二控制信号；\n\n[0027]所述第三转换模块，用于通过对所述第二控制信号进行数模转换处理的方式将所述第二控制信号转换为第三控制信号；\n\n[0028]所述驱动控制模块，用于利用所述第一控制信号和所述第三控制信号对背光源进行驱动。\n\n[0029]进一步地，所述背光驱动模组还包括低压差分信号接口模块，所述低压差分信号接口模块用于获取待处理的所述第一驱动信号和所述第二驱动信号。\n\n[0030]进一步地，所述背光驱动模组为通过覆晶薄膜封装方式形成的背光驱动模组。\n\n[0031]进一步地，所述背光源为迷你发光二极管背光源，所述背光驱动模组通过覆晶薄膜封装方式键合在所述迷你发光二极管背光源上。\n\n[0032]进一步地，所述第一寄存模块和所述第二寄存模块均为双向移位寄存器。\n\n[0033]为实现上述的技术目的，本发明还提供了一种背光源驱动装置，所述背光源驱动装置包括上述任一种背光源驱动电路。\n\n[0034]本发明的有益效果为：本发明创新地对背光源驱动策略进行了优化，并且通过覆晶薄膜封装工艺将数据流解码部分、移位寄存器部分及电平转换部分等功能单元进行有效地集成，从而避免了背光源驱动装置中存在大量的独立器件的问题，极大地简化了背光源驱动线路，进而能够极大地降低背光源驱动板占用的空间，使背光源驱动成本更低、可靠性更强，从而彻底地解决了现有背光源驱动方案存在的诸多问题。\n\n[0035]经过大量的测试表明：本发明特别适用于具有优良性能的迷你发光二极管(MiniLED)，为迷你发光二极管的背光驱动问题提供了较好的解决方案，所以本发明便于推广和广泛地应用。\n\n附图说明\n\n[0036]为了更清楚地说明本发明实施例中的技术方案，下面将对各个实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据本发明下面具体描述中的这些附图获得其他的附图。\n\n[0037]图1为背光源驱动方法的流程示意图。\n\n[0038]图2为背光驱动模组的结构组成示意图。\n\n[0039]图3为传统的背光驱动模组的结构组成示意图。\n\n具体实施方式\n\n[0040]下面结合说明书附图对本发明各实施例提供的一种背光源驱动方法、背光源驱动电路及背光源驱动装置的技术方案进行清楚、完整地描述，显然地，所描述的实施例仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0041]在本发明的描述中，需理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，所以不能理解为对本发明的限制。此外，术语“第一”、“第二”、“第三”等仅用于描述目的，而不能将其理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”、“第三”的特征可以明示或隐含地包括一个或者更多个特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0042]在本发明中，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或成一体；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系，除非另有明确的限定。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0043]在本发明中，“示例性”一词用来表示“用作例子、例证或说明”。本发明中被描述为“示例性”的任何实施例不一定被解释为比其它实施例更优选或更具优势。为了使本领域任何技术人员能够实现和使用本发明，给出了以下描述。在以下描述中，本发明为了解释的目的而列出了细节。应当明白的是，本领域普通技术人员可以认识到，即使在不使用这些特定细节的情况下也可以实现本发明。在其它的实例中，不会对公知的结构和过程进行详细阐述，以避免不必要的细节使本发明的描述变得晦涩。因此，本发明并非旨在限于所示的实施例，而是应与符合本发明所公开的原理和特征的最广范围相一致。\n\n[0044]实施例一：\n\n[0045]请参阅图1，图1为背光源驱动方法的流程示意图。如图1所示，本实施例具体公开了一种背光源驱动方法，本实施例可理解为背光模组驱动方法，用于实现对发光二极管(特别是迷你发光二极管)的有效驱动以及控制，该背光源驱动方法包括第一驱动信号处理步骤、第二驱动信号处理步骤以及背光源驱动步骤。\n\n[0046]首先，本实施例在对第一驱动信号和第二驱动信号进行处理前，通过低压差分信号接口获取前端(比如设备处理器或控控制器)提供的数据(data)，即本实施例通过低压差分信号接口获取数据第一驱动信号和第二驱动信号，更为具体来说，第一驱动信号一般为扫描(SCAN)控制信号，扫描控制信号具体包括CPV(Clock Pulse Vertical，栅的纵向移动)信号、DIO1(栅极启动脉冲)信号及OE(Output Enable，栅的输出控制)信号等等；第二控制信号可为数据(DATA)控制信号，数据控制信号包括STB1(strobe，选通)信号及DIO2(栅极启动脉冲)信号等。而对于第一驱动信号和第二驱动信号的具体处理过程，请参阅下述的说明和解释。\n\n[0047]第一驱动信号处理步骤包括：\n\n[0048]步骤10，首先，本实施例将第一驱动信号解码为第一TTL(全称TransistorTransistor Logic，晶体管-晶体管逻辑)电平信号，从而使该信号能够被后续功能模块(如寄存模块)处理。\n\n[0049]步骤11，其次，通过对第一TTL电平信号进行寄存处理的方式将第一TTL电平信号调整为第一同步信号，本实施例可对第一TTL电平信号进行移位寄存处理。\n\n[0050]步骤12，再次，通过对第一同步信号进行电平转换处理的方式将第一同步信号转换为第一控制信号，第一控制信号可为数字控制信号，可用于控制相应迷你发光二极管是否导通，即控制打开或关闭相应迷你发光二极管。需要指出的是，本实施例在电平转换处理过程中，能够通过TFT开启电平信号(VGH，Driver Output High)或TFT关闭电平信号(VGL，Driver Output Low)进行控制，从而完成对相应的迷你发光二极管进行通断控制。\n\n[0051]应当理解的是，第二驱动信号处理步骤能够与第一驱动信号处理步骤同时或不同时执行，具体执行策略可根据实际显示设备的需要和实时性能进行合理而明智的选择。\n\n[0052]第二驱动信号处理步骤包括：\n\n[0053]步骤20，将第二驱动信号解码为第二TTL(全称Transistor Transistor Logic，晶体管-晶体管逻辑)电平信号，以使该信号能够被后续功能模块(如寄存模块)处理。\n\n[0054]步骤21，通过对第二TTL电平信号进行寄存处理的方式将第二TTL电平信号调整为第二同步信号，本实施例能够对第二TTL电平信号进行移位寄存处理。\n\n[0055]步骤22，通过对第二同步信号进行电平转换处理的方式将第二同步信号转换为第二控制信号。\n\n[0056]步骤23，通过对第二控制信号进行数模转换处理的方式将第二控制信号转换为第三控制信号，即第三控制信号为模拟控制信号，可根据模拟量的具体值大小间接或直接控制相应迷你发光二极管的亮度。\n\n[0057]背光源驱动步骤包括：本实施例利用第一控制信号和第三控制信号对背光源进行驱动；具体地，如图1所示，扫描信号1～N用于控制各迷你发光二极管开关，数据信号1～M用于控制各迷你发光二极管亮度，通过同时控制各迷你发光二极管是否导通以及对导通的迷你发光二极管亮度的精细控制，本发明能够较好地实现对背光模组的驱动功能，实现对显示设备可靠的控制，为使用该显示设备的用户带来绝佳的使用体验。\n\n[0058]作为较佳的技术方案，本发明还将子场控制技术进行了应用，在背光源驱动步骤中，利用第一控制信号和第三控制信号且通过子场控制方式对背光源进行驱动，子场控制具体执行程序根据需求选择，本发明不再赘述。\n\n[0059]作为优化的技术方案，对于具体背光模组(即背光源)，本实施例在通过子场控制方式对背光源进行驱动时，可将第一控制信号作为背光源的有源矩阵(Active-matrix，简称AM)的行驱动信号，可将第三控制信号作为背光源的有源矩阵(Active-matrix，简称AM)的列驱动信号。而且，具体实施显示屏驱动时，每帧数据往往包含多个子场，以8个子场、刷新频率120Hz为例，当相应点薄膜晶体管(TFT，Thin Film Transistor)的行开关打开并且数据已准备好，就会对相应点的薄膜晶体管进行充电或放电，每个子场对应的时间长度不同，而且薄膜晶体管栅极电压会对应迷你发光二极管电流，薄膜晶体管栅极电压变化导致迷你发光二极管电流变化，而迷你发光二极管电流变化控制该迷你发光二极管亮度变化。能够理解的是，本发明适用于具有重量轻、亮度高、寿命长、功耗低、自发光、尺寸小、响应速度快以及可控性更强等显著特点的迷你发光二极管(MiniLED)，所以本发明具有非常大的市场应用前景。\n\n[0060]实施例二：\n\n[0061]与实施例一基于相同的发明构思，本实施例具体提供了一种能够实现实施例一中的背光源驱动方法的背光源驱动电路，本实施例相当于提供了一块或多块子场控制有源矩阵(Active-matrix，简称AM)迷你发光二极管(miniLED)的驱动芯片，多块驱动芯片可通过拼接或集成的方式连接在一起，上述驱动芯片具体为IC芯片(即集成电路芯片，全称Integrated Circuit Chip)，更为具体来说，该背光源驱动电路包括一个或者至少两个相拼接的背光驱动模组，相拼接的相邻背光驱动模组之间可通过图示接口连接，接口1和接口2用于数据传输和供电，该背光驱动模组在具有传统的方案的功能基础上对各独立器件进行了集成，请结合图1的同时再参阅图2，图2为背光驱动模组的结构组成示意图，只要将一块连接板的接口1与另一块连接板的接口2相连，即可以实现多个背光驱动模组沿左右或上下等已实现设计的方向顺次拼接；该背光驱动模组包括第一处理模块、第二处理模块及驱动控制模块；具体地，第一处理模块包括第一信号解码模块、第一寄存模块及第一转换模块，第一信号解码模块、第一寄存模块及第一转换模块可依次连接，第二处理模块包括第二信号解码模块、第二寄存模块、第二转换模块及第三转换模块，第二信号解码模块、第二寄存模块、第二转换模块及第三转换模块可以依次连接；应当理解的是，上述第一处理模块、第二处理模块及驱动控制模块以及各模块包含的子模块均集成在一块IC芯片(即集成电路芯片，全称Integrated Circuit Chip)上，图3为传统的背光驱动模组的结构组成示意图，与图3中的多条分散的、占用空间较大的背光源驱动装置相比，本实施例能够提供一种全新的技术方案，如图1、2所示，通过覆晶薄膜封装工艺将数据流解码部分、移位寄存器部分及电平转换部分等功能单元进行有效地集成，从而避免了背光源驱动装置中存在大量的独立器件的问题，极大地简化了背光源驱动线路，进而能够极大地降低背光源驱动板占用的空间，使背光源驱动成本更低、可靠性更强、适用范围更广，以彻底解决现有背光源驱动方案存在的诸多问题，具体说明如下。\n\n[0062]第一信号解码模块，用于将第一驱动信号解码为第一TTL(全称TransistorTransistor Logic，晶体管-晶体管逻辑)电平信号，然后将第一TTL电平信号送到第一寄存模块。\n\n[0063]第一寄存模块，用于通过对第一TTL电平信号进行寄存处理的方式将第一TTL电平信号调整为第一同步信号，再将第一同步信号送至第一转换模块。作为较佳的技术方案，上述的第一寄存模块为双向移位寄存器。\n\n[0064]第一转换模块，用于通过对第一同步信号进行电平转换处理的方式将第一同步信号转换为第一控制信号。本实施例在第一转换模块的工作过程中，即在第一转换模块的电平转换处理过程中，可以通过TFT开启电平信号(VGH，Driver Output High)对相应迷你发光二极管进行开启控制或通过TFT关闭电平信号(VGL，Driver Output Low)对相应迷你发光二极管进行关闭控制。\n\n[0065]第二信号解码模块，用于将第二驱动信号解码为第二TTL(全称TransistorTransistor Logic，晶体管-晶体管逻辑)电平信号，然后将第二TTL电平信号送到第二寄存模块。\n\n[0066]第二寄存模块，用于通过对第二TTL电平信号进行寄存处理的方式将第二TTL电平信号调整为第二同步信号，再将第二同步信号送至第二转换模块。作为较佳的技术方案，上述的第二寄存模块为双向移位寄存器。\n\n[0067]第二转换模块，用于通过对第二同步信号进行电平转换处理的方式将第二同步信号转换为第二控制信号，在转换完成后，再将该第二控制信号发送至第三转换模块。\n\n[0068]第三转换模块，用于通过对第二控制信号进行数模转换处理的方式将第二控制信号转换为第三控制信号，在对第二控制信号转换的过程中，可实现调整数据(data)输出电压幅度，即调整第三控制信号的电压幅度，从而能够改变对该电压幅度相对应的迷你发光二极管(miniLED)电流，从而能够达到更多的亮度值调整。\n\n[0069]驱动控制模块，用于利用第一控制信号和第三控制信号对背光源进行驱动。具体地，如图1所示，扫描信号1～N用于控制各迷你发光二极管开关，数据信号1～M用于控制各迷你发光二极管亮度，通过同时控制各迷你发光二极管是否导通以及对导通的迷你发光二极管亮度的精细控制，本发明能够较好地实现对背光模组的驱动功能，以实现对显示设备极佳的控制，为使用该显示设备的用户带来绝佳的使用体验。\n\n[0070]本实施例中，背光驱动模组还包括低压差分信号接口模块，本发明的低压差分信号接口模块为集成在屏驱动板(TCON)上的miniLVDS(迷你低压差分信号接口)，用于获取待处理的第一驱动信号和第二驱动信号，并且将获取的第一驱动信号和第二驱动信号作为后续第一处理模块、第二处理模块和驱动控制模块的数据来源。\n\n[0071]作为本发明的核心改进点或创新点之一，本实施例的背光驱动模组为通过覆晶薄膜(COF，其全称为Chip On Flex或Chip On Film)封装方式形成的背光驱动模组，这种封装方式将各个功能模块(包括第一信号解码模块、第一寄存模块、第一转换模块、二信号解码模块、第二寄存模块、第二转换模块及第三转换模块)集成在一起，极大地节省了背光源驱动模组空间，而且该方式成本较低、不会额外增加键合(bonding)成本。\n\n[0072]本实施例中，背光源为迷你发光二极管(miniLED)背光源，背光驱动模组通过覆晶薄膜(COF，其全称为Chip On Flex或Chip On Film)封装方式键合在迷你发光二极管(miniLED)背光源上；本实施例至少一个背光驱动模组键合(bonding)在有源矩阵(Active-matrix,简称AM)迷你发光二极管(miniLED)的玻璃基板上，从而实现对背光模组的迷你发光二极管的驱动。\n\n[0073]实施例三：\n\n[0074]本实施例与上述的实施例二基于相同的发明构思，其具体提供了一种背光源驱动装置，该背光源驱动装置包括上述实施例二中所提供的任一种背光源驱动电路。该背光源驱动装置可用于多种终端的显示屏，比如手机、平板电脑、笔记本电脑、台式电脑、智能手表、智能手环等具有显示屏的终端。\n\n[0075]以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明实质内容上所作的任何修改、等同替换和简单改进等，均应包含在本发明的保护范围之内。', '技术领域\n\n[0001]本发明涉及背光驱动技术领域，更为具体来说，本发明为一种背光源驱动方法、背光源驱动电路及背光源驱动装置。\n\n背景技术\n\n[0002]作为背光源的迷你发光二极管(miniLED)的常规驱动方案是：基于各独立的器件构成驱动线路，具体驱动方法为在行驱动和列驱动的方式下分别控制各个驱动线路的工作状态，利用薄膜晶体管(TFT，Thin Film Transistor)的特性驱动玻璃基板上的迷你发光二极管，从而实现了对迷你发光二极管的亮度控制，如说明书附图的图3所示。\n\n[0003]但是，常规的背光源驱动方案中的驱动线路往往会随着迷你发光二极管的数量和密度的增加而明显地增多，过多的驱动线路导致驱动策略变得过于复杂，诸多的驱动线路中必然包含大量的独立器件，大量的独立器件导致驱动板占用更多的空间，更多的空间占用和更复杂的驱动策略导致了背光源最终的驱动成本非常高。\n\n[0004]因此，如何优化背光源驱动策略、简化背光源驱动线路，进而有效地降低背光源驱动的投入成本，成为了本领域技术人员亟待解决的技术问题和始终研究的重点。\n\n发明内容\n\n[0005]为解决现有背光源驱动方案存在的驱动策略过于复杂、驱动线路占用空间过大导致的背光源驱动方案成本过高的问题，本发明创新提供了一种背光源驱动方法、背光源驱动电路及背光源驱动装置，从背光源驱动策略、背光源驱动模组的结构两方面解决了常规的驱动线路过多导致的背光源驱动板空间占用过大、背光源驱动策略过于复杂及可靠性较差等问题。\n\n[0006]为实现上述的技术目的，本发明提供了一种背光源驱动方法，该方法包括第一驱动信号处理步骤、第二驱动信号处理步骤及背光源驱动步骤；其中，\n\n[0007]第一驱动信号处理步骤包括：\n\n[0008]步骤10，将第一驱动信号解码为第一TTL电平信号；\n\n[0009]步骤11，通过对所述第一TTL电平信号进行寄存处理的方式将所述第一TTL电平信号调整为第一同步信号；\n\n[0010]步骤12，通过对所述第一同步信号进行电平转换处理的方式将所述第一同步信号转换为第一控制信号；\n\n[0011]第二驱动信号处理步骤包括：\n\n[0012]步骤20，将第二驱动信号解码为第二TTL电平信号；\n\n[0013]步骤21，通过对所述第二TTL电平信号进行寄存处理的方式将所述第二TTL电平信号调整为第二同步信号；\n\n[0014]步骤22，通过对所述第二同步信号进行电平转换处理的方式将所述第二同步信号转换为第二控制信号；\n\n[0015]步骤23，通过对所述第二控制信号进行数模转换处理的方式将所述第二控制信号转换为第三控制信号；\n\n[0016]背光源驱动步骤包括：利用所述第一控制信号和所述第三控制信号对背光源进行驱动。\n\n[0017]进一步地，所述方法还包括如下步骤，在对所述第一驱动信号和所述第二驱动信号进行处理前，通过低压差分信号接口获取所述第一驱动信号和所述第二驱动信号。\n\n[0018]进一步地，在所述背光源驱动步骤中，利用所述第一控制信号和所述第三控制信号且通过子场控制方式对背光源进行驱动。\n\n[0019]进一步地，在通过子场控制方式对背光源进行驱动时，将所述第一控制信号作为背光源的有源矩阵的行驱动信号，将所述第三控制信号作为背光源的有源矩阵的列驱动信号。\n\n[0020]为实现上述的技术目的，本发明还提供了一种背光源驱动电路，该电路包括一个或至少两个相拼接的背光驱动模组，所述背光驱动模组包括第一处理模块、第二处理模块及驱动控制模块；所述第一处理模块包括第一信号解码模块、第一寄存模块及第一转换模块，所述第二处理模块包括第二信号解码模块、第二寄存模块、第二转换模块及第三转换模块；\n\n[0021]所述第一信号解码模块，用于将第一驱动信号解码为第一TTL电平信号；\n\n[0022]所述第一寄存模块，用于通过对所述第一TTL电平信号进行寄存处理的方式将所述第一TTL电平信号调整为第一同步信号；\n\n[0023]所述第一转换模块，用于通过对所述第一同步信号进行电平转换处理的方式将所述第一同步信号转换为第一控制信号；\n\n[0024]所述第二信号解码模块，用于将第二驱动信号解码为第二TTL电平信号；\n\n[0025]所述第二寄存模块，用于通过对所述第二TTL电平信号进行寄存处理的方式将所述第二TTL电平信号调整为第二同步信号；\n\n[0026]所述第二转换模块，用于通过对所述第二同步信号进行电平转换处理的方式将所述第二同步信号转换为第二控制信号；\n\n[0027]所述第三转换模块，用于通过对所述第二控制信号进行数模转换处理的方式将所述第二控制信号转换为第三控制信号；\n\n[0028]所述驱动控制模块，用于利用所述第一控制信号和所述第三控制信号对背光源进行驱动。\n\n[0029]进一步地，所述背光驱动模组还包括低压差分信号接口模块，所述低压差分信号接口模块用于获取待处理的所述第一驱动信号和所述第二驱动信号。\n\n[0030]进一步地，所述背光驱动模组为通过覆晶薄膜封装方式形成的背光驱动模组。\n\n[0031]进一步地，所述背光源为迷你发光二极管背光源，所述背光驱动模组通过覆晶薄膜封装方式键合在所述迷你发光二极管背光源上。\n\n[0032]进一步地，所述第一寄存模块和所述第二寄存模块均为双向移位寄存器。\n\n[0033]为实现上述的技术目的，本发明还提供了一种背光源驱动装置，所述背光源驱动装置包括上述任一种背光源驱动电路。\n\n[0034]本发明的有益效果为：本发明创新地对背光源驱动策略进行了优化，并且通过覆晶薄膜封装工艺将数据流解码部分、移位寄存器部分及电平转换部分等功能单元进行有效地集成，从而避免了背光源驱动装置中存在大量的独立器件的问题，极大地简化了背光源驱动线路，进而能够极大地降低背光源驱动板占用的空间，使背光源驱动成本更低、可靠性更强，从而彻底地解决了现有背光源驱动方案存在的诸多问题。\n\n[0035]经过大量的测试表明：本发明特别适用于具有优良性能的迷你发光二极管(MiniLED)，为迷你发光二极管的背光驱动问题提供了较好的解决方案，所以本发明便于推广和广泛地应用。\n\n附图说明\n\n[0036]为了更清楚地说明本发明实施例中的技术方案，下面将对各个实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据本发明下面具体描述中的这些附图获得其他的附图。\n\n[0037]图1为背光源驱动方法的流程示意图。\n\n[0038]图2为背光驱动模组的结构组成示意图。\n\n[0039]图3为传统的背光驱动模组的结构组成示意图。\n\n具体实施方式\n\n[0040]下面结合说明书附图对本发明各实施例提供的一种背光源驱动方法、背光源驱动电路及背光源驱动装置的技术方案进行清楚、完整地描述，显然地，所描述的实施例仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0041]在本发明的描述中，需理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，所以不能理解为对本发明的限制。此外，术语“第一”、“第二”、“第三”等仅用于描述目的，而不能将其理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”、“第三”的特征可以明示或隐含地包括一个或者更多个特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0042]在本发明中，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或成一体；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系，除非另有明确的限定。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0043]在本发明中，“示例性”一词用来表示“用作例子、例证或说明”。本发明中被描述为“示例性”的任何实施例不一定被解释为比其它实施例更优选或更具优势。为了使本领域任何技术人员能够实现和使用本发明，给出了以下描述。在以下描述中，本发明为了解释的目的而列出了细节。应当明白的是，本领域普通技术人员可以认识到，即使在不使用这些特定细节的情况下也可以实现本发明。在其它的实例中，不会对公知的结构和过程进行详细阐述，以避免不必要的细节使本发明的描述变得晦涩。因此，本发明并非旨在限于所示的实施例，而是应与符合本发明所公开的原理和特征的最广范围相一致。\n\n[0044]实施例一：\n\n[0045]请参阅图1，图1为背光源驱动方法的流程示意图。如图1所示，本实施例具体公开了一种背光源驱动方法，本实施例可理解为背光模组驱动方法，用于实现对发光二极管(特别是迷你发光二极管)的有效驱动以及控制，该背光源驱动方法包括第一驱动信号处理步骤、第二驱动信号处理步骤以及背光源驱动步骤。\n\n[0046]首先，本实施例在对第一驱动信号和第二驱动信号进行处理前，通过低压差分信号接口获取前端(比如设备处理器或控控制器)提供的数据(data)，即本实施例通过低压差分信号接口获取数据第一驱动信号和第二驱动信号，更为具体来说，第一驱动信号一般为扫描(SCAN)控制信号，扫描控制信号具体包括CPV(Clock Pulse Vertical，栅的纵向移动)信号、DIO1(栅极启动脉冲)信号及OE(Output Enable，栅的输出控制)信号等等；第二控制信号可为数据(DATA)控制信号，数据控制信号包括STB1(strobe，选通)信号及DIO2(栅极启动脉冲)信号等。而对于第一驱动信号和第二驱动信号的具体处理过程，请参阅下述的说明和解释。\n\n[0047]第一驱动信号处理步骤包括：\n\n[0048]步骤10，首先，本实施例将第一驱动信号解码为第一TTL(全称TransistorTransistor Logic，晶体管-晶体管逻辑)电平信号，从而使该信号能够被后续功能模块(如寄存模块)处理。\n\n[0049]步骤11，其次，通过对第一TTL电平信号进行寄存处理的方式将第一TTL电平信号调整为第一同步信号，本实施例可对第一TTL电平信号进行移位寄存处理。\n\n[0050]步骤12，再次，通过对第一同步信号进行电平转换处理的方式将第一同步信号转换为第一控制信号，第一控制信号可为数字控制信号，可用于控制相应迷你发光二极管是否导通，即控制打开或关闭相应迷你发光二极管。需要指出的是，本实施例在电平转换处理过程中，能够通过TFT开启电平信号(VGH，Driver Output High)或TFT关闭电平信号(VGL，Driver Output Low)进行控制，从而完成对相应的迷你发光二极管进行通断控制。\n\n[0051]应当理解的是，第二驱动信号处理步骤能够与第一驱动信号处理步骤同时或不同时执行，具体执行策略可根据实际显示设备的需要和实时性能进行合理而明智的选择。\n\n[0052]第二驱动信号处理步骤包括：\n\n[0053]步骤20，将第二驱动信号解码为第二TTL(全称Transistor Transistor Logic，晶体管-晶体管逻辑)电平信号，以使该信号能够被后续功能模块(如寄存模块)处理。\n\n[0054]步骤21，通过对第二TTL电平信号进行寄存处理的方式将第二TTL电平信号调整为第二同步信号，本实施例能够对第二TTL电平信号进行移位寄存处理。\n\n[0055]步骤22，通过对第二同步信号进行电平转换处理的方式将第二同步信号转换为第二控制信号。\n\n[0056]步骤23，通过对第二控制信号进行数模转换处理的方式将第二控制信号转换为第三控制信号，即第三控制信号为模拟控制信号，可根据模拟量的具体值大小间接或直接控制相应迷你发光二极管的亮度。\n\n[0057]背光源驱动步骤包括：本实施例利用第一控制信号和第三控制信号对背光源进行驱动；具体地，如图1所示，扫描信号1～N用于控制各迷你发光二极管开关，数据信号1～M用于控制各迷你发光二极管亮度，通过同时控制各迷你发光二极管是否导通以及对导通的迷你发光二极管亮度的精细控制，本发明能够较好地实现对背光模组的驱动功能，实现对显示设备可靠的控制，为使用该显示设备的用户带来绝佳的使用体验。\n\n[0058]作为较佳的技术方案，本发明还将子场控制技术进行了应用，在背光源驱动步骤中，利用第一控制信号和第三控制信号且通过子场控制方式对背光源进行驱动，子场控制具体执行程序根据需求选择，本发明不再赘述。\n\n[0059]作为优化的技术方案，对于具体背光模组(即背光源)，本实施例在通过子场控制方式对背光源进行驱动时，可将第一控制信号作为背光源的有源矩阵(Active-matrix，简称AM)的行驱动信号，可将第三控制信号作为背光源的有源矩阵(Active-matrix，简称AM)的列驱动信号。而且，具体实施显示屏驱动时，每帧数据往往包含多个子场，以8个子场、刷新频率120Hz为例，当相应点薄膜晶体管(TFT，Thin Film Transistor)的行开关打开并且数据已准备好，就会对相应点的薄膜晶体管进行充电或放电，每个子场对应的时间长度不同，而且薄膜晶体管栅极电压会对应迷你发光二极管电流，薄膜晶体管栅极电压变化导致迷你发光二极管电流变化，而迷你发光二极管电流变化控制该迷你发光二极管亮度变化。能够理解的是，本发明适用于具有重量轻、亮度高、寿命长、功耗低、自发光、尺寸小、响应速度快以及可控性更强等显著特点的迷你发光二极管(MiniLED)，所以本发明具有非常大的市场应用前景。\n\n[0060]实施例二：\n\n[0061]与实施例一基于相同的发明构思，本实施例具体提供了一种能够实现实施例一中的背光源驱动方法的背光源驱动电路，本实施例相当于提供了一块或多块子场控制有源矩阵(Active-matrix，简称AM)迷你发光二极管(miniLED)的驱动芯片，多块驱动芯片可通过拼接或集成的方式连接在一起，上述驱动芯片具体为IC芯片(即集成电路芯片，全称Integrated Circuit Chip)，更为具体来说，该背光源驱动电路包括一个或者至少两个相拼接的背光驱动模组，相拼接的相邻背光驱动模组之间可通过图示接口连接，接口1和接口2用于数据传输和供电，该背光驱动模组在具有传统的方案的功能基础上对各独立器件进行了集成，请结合图1的同时再参阅图2，图2为背光驱动模组的结构组成示意图，只要将一块连接板的接口1与另一块连接板的接口2相连，即可以实现多个背光驱动模组沿左右或上下等已实现设计的方向顺次拼接；该背光驱动模组包括第一处理模块、第二处理模块及驱动控制模块；具体地，第一处理模块包括第一信号解码模块、第一寄存模块及第一转换模块，第一信号解码模块、第一寄存模块及第一转换模块可依次连接，第二处理模块包括第二信号解码模块、第二寄存模块、第二转换模块及第三转换模块，第二信号解码模块、第二寄存模块、第二转换模块及第三转换模块可以依次连接；应当理解的是，上述第一处理模块、第二处理模块及驱动控制模块以及各模块包含的子模块均集成在一块IC芯片(即集成电路芯片，全称Integrated Circuit Chip)上，图3为传统的背光驱动模组的结构组成示意图，与图3中的多条分散的、占用空间较大的背光源驱动装置相比，本实施例能够提供一种全新的技术方案，如图1、2所示，通过覆晶薄膜封装工艺将数据流解码部分、移位寄存器部分及电平转换部分等功能单元进行有效地集成，从而避免了背光源驱动装置中存在大量的独立器件的问题，极大地简化了背光源驱动线路，进而能够极大地降低背光源驱动板占用的空间，使背光源驱动成本更低、可靠性更强、适用范围更广，以彻底解决现有背光源驱动方案存在的诸多问题，具体说明如下。\n\n[0062]第一信号解码模块，用于将第一驱动信号解码为第一TTL(全称TransistorTransistor Logic，晶体管-晶体管逻辑)电平信号，然后将第一TTL电平信号送到第一寄存模块。\n\n[0063]第一寄存模块，用于通过对第一TTL电平信号进行寄存处理的方式将第一TTL电平信号调整为第一同步信号，再将第一同步信号送至第一转换模块。作为较佳的技术方案，上述的第一寄存模块为双向移位寄存器。\n\n[0064]第一转换模块，用于通过对第一同步信号进行电平转换处理的方式将第一同步信号转换为第一控制信号。本实施例在第一转换模块的工作过程中，即在第一转换模块的电平转换处理过程中，可以通过TFT开启电平信号(VGH，Driver Output High)对相应迷你发光二极管进行开启控制或通过TFT关闭电平信号(VGL，Driver Output Low)对相应迷你发光二极管进行关闭控制。\n\n[0065]第二信号解码模块，用于将第二驱动信号解码为第二TTL(全称TransistorTransistor Logic，晶体管-晶体管逻辑)电平信号，然后将第二TTL电平信号送到第二寄存模块。\n\n[0066]第二寄存模块，用于通过对第二TTL电平信号进行寄存处理的方式将第二TTL电平信号调整为第二同步信号，再将第二同步信号送至第二转换模块。作为较佳的技术方案，上述的第二寄存模块为双向移位寄存器。\n\n[0067]第二转换模块，用于通过对第二同步信号进行电平转换处理的方式将第二同步信号转换为第二控制信号，在转换完成后，再将该第二控制信号发送至第三转换模块。\n\n[0068]第三转换模块，用于通过对第二控制信号进行数模转换处理的方式将第二控制信号转换为第三控制信号，在对第二控制信号转换的过程中，可实现调整数据(data)输出电压幅度，即调整第三控制信号的电压幅度，从而能够改变对该电压幅度相对应的迷你发光二极管(miniLED)电流，从而能够达到更多的亮度值调整。\n\n[0069]驱动控制模块，用于利用第一控制信号和第三控制信号对背光源进行驱动。具体地，如图1所示，扫描信号1～N用于控制各迷你发光二极管开关，数据信号1～M用于控制各迷你发光二极管亮度，通过同时控制各迷你发光二极管是否导通以及对导通的迷你发光二极管亮度的精细控制，本发明能够较好地实现对背光模组的驱动功能，以实现对显示设备极佳的控制，为使用该显示设备的用户带来绝佳的使用体验。\n\n[0070]本实施例中，背光驱动模组还包括低压差分信号接口模块，本发明的低压差分信号接口模块为集成在屏驱动板(TCON)上的miniLVDS(迷你低压差分信号接口)，用于获取待处理的第一驱动信号和第二驱动信号，并且将获取的第一驱动信号和第二驱动信号作为后续第一处理模块、第二处理模块和驱动控制模块的数据来源。\n\n[0071]作为本发明的核心改进点或创新点之一，本实施例的背光驱动模组为通过覆晶薄膜(COF，其全称为Chip On Flex或Chip On Film)封装方式形成的背光驱动模组，这种封装方式将各个功能模块(包括第一信号解码模块、第一寄存模块、第一转换模块、二信号解码模块、第二寄存模块、第二转换模块及第三转换模块)集成在一起，极大地节省了背光源驱动模组空间，而且该方式成本较低、不会额外增加键合(bonding)成本。\n\n[0072]本实施例中，背光源为迷你发光二极管(miniLED)背光源，背光驱动模组通过覆晶薄膜(COF，其全称为Chip On Flex或Chip On Film)封装方式键合在迷你发光二极管(miniLED)背光源上；本实施例至少一个背光驱动模组键合(bonding)在有源矩阵(Active-matrix,简称AM)迷你发光二极管(miniLED)的玻璃基板上，从而实现对背光模组的迷你发光二极管的驱动。\n\n[0073]实施例三：\n\n[0074]本实施例与上述的实施例二基于相同的发明构思，其具体提供了一种背光源驱动装置，该背光源驱动装置包括上述实施例二中所提供的任一种背光源驱动电路。该背光源驱动装置可用于多种终端的显示屏，比如手机、平板电脑、笔记本电脑、台式电脑、智能手表、智能手环等具有显示屏的终端。\n\n[0075]以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明实质内容上所作的任何修改、等同替换和简单改进等，均应包含在本发明的保护范围之内。');
INSERT INTO `os_patent_instruction_text` VALUES (10752, 23806, '技术领域\n\n[0001]本申请涉及显示器技术领域，特别是涉及一种显示背板检测设备及其检测方法、装置。\n\n背景技术\n\n[0002]Micro-LED发展成未来显示技术的热点之一，和目前的LCD和OLED显示器件相比，具有反应快、高色域、高PPI、低能耗等优势。但其技术难点多且技术复杂，特别是其关键技术巨量转移技术、LED颗粒微型化成为技术瓶颈，而Mini-LED作为Micro-LED与背板结合的产物，具有高对比度、高显色性能等可与OLED相媲美的特点，成本稍高LCD，仅为OLED的六成左右，相对Micro-LED、OLED更易实施，所以Mini-LED成为各大面板厂商布局热点。\n\n[0003]Mini-LED背板或Micro-LED背板制作和切割过程中，由于制程原因，可能会有背板划伤、污染、膜层残留和过刻等导致的背板短路、断路等缺陷，从而影响LED SMT(SurfaceMounted Technology，表面贴装技术)后的点亮效果。但是传统检测方式AOI&AOH(Automated Optical Inspection，自动光学检测)检测出结果，需要人员研判后才能确定缺失是否对点灯有影响，且受制于研判人员的差异及无法直接判定对点灯影响。\n\n[0004]在实现过程中，发明人发现传统技术中至少存在如下问题：传统的显示背板检测方式通常采用人员研判后才能确定缺失是否对点灯有影响，背板检测过程复杂，且背板缺陷检测率低。\n\n发明内容\n\n[0005]基于此，有必要针对传统的显示背板检测方式通常采用人员研判后才能确定缺失是否对点灯有影响，背板检测过程复杂，且背板缺陷检测率低的技术问题，提供一种显示背板检测设备及其检测方法、装置。\n\n[0006]为了实现上述目的，本发明实施例提供了一种显示背板检测设备，包括：\n\n[0007]载台，载台用于可拆卸放置待检测背板；待检测背板包含多个LED元件；\n\n[0008]电流传感电路板，电流传感电路板包括多个电流传感器；各电流传感器与各LED元件一一对应连接；\n\n[0009]电源设备，电源设备分别连接各电流传感器；\n\n[0010]控制设备，控制设备分别连接各电流传感器；\n\n[0011]其中，电源设备向各电流传感器传输电压信号；各电流传感器根据电压信号分别检测相应的LED元件，得到各相应的电流信号，并将各电流信号分别传输给控制设备；控制设备依次将接收到的各电流信号的电流值与LED阈值电流比对，并根据比对的结果，得到对应超出LED阈值电流的LED元件的位置信息。\n\n[0012]在其中一个实施例中，控制设备根据预设电流等级，划分对应超出LED阈值电流的LED元件，得到对应超出LED阈值电流的LED元件的缺陷等级。\n\n[0013]在其中一个实施例中，还包括设于载台的固定脚组件；\n\n[0014]固定脚组件用于可拆卸固定待检测背板。\n\n[0015]在其中一个实施例中，控制设备包括处理器以及连接处理器的显示屏；\n\n[0016]处理器分别连接各电流传感器。\n\n[0017]在其中一个实施例中，还包括电流传输电路链接板；\n\n[0018]电流传输电路链接板连接在电流传感电路板与控制设备之间。\n\n[0019]在其中一个实施例中，还包括连接在电源设备与电流传感电路板之间的COF板。\n\n[0020]在其中一个实施例中，待检测背板为Mini-LED背板或Micro-LED背板。\n\n[0021]另一方面，本发明实施例还提供了显示背板检测方法，包括以下步骤：\n\n[0022]依次将接收到的各电流信号的电流值与LED阈值电流比对；电流信号为电流传感器根据电源设备传输的电压信号检测待检测背板相应的LED元件得到；\n\n[0023]根据比对的结果，得到对应超出LED阈值电流的LED元件的位置信息。\n\n[0024]在其中一个实施例中，根据比对的结果，得到对应超出LED阈值电流的LED元件的位置信息的步骤之后包括：\n\n[0025]根据预设电流等级，划分对应超出LED阈值电流的LED元件，得到对应超出LED阈值电流的LED元件的缺陷等级。\n\n[0026]另一方面，本发明实施例还提供了显示背板检测装置，该装置包括：\n\n[0027]电流比对单元，用于依次将接收到的各电流信号的电流值与LED阈值电流比对；电流信号为电流传感器根据电源设备传输的电压信号检测待检测背板相应的LED元件得到；\n\n[0028]位置信息获取单元，用于根据比对的结果，得到对应超出LED阈值电流的LED元件的位置信息。\n\n[0029]上述技术方案中的一个技术方案具有如下优点和有益效果：\n\n[0030]上述的显示背板检测设备的各实施例中，包括载台，电流传感电路板，电源设备和控制设备；载台用于可拆卸放置待检测背板；待检测背板包含多个LED元件；电流传感电路板包括多个电流传感器；基于各电流传感器与各LED元件一一对应连接；电源设备分别连接各电流传感器；控制设备分别连接各电流传感器。进而电源设备向各电流传感器传输电压信号；各电流传感器根据电压信号分别检测相应的LED元件，得到各相应的电流信号，并将各电流信号分别传输给控制设备；控制设备依次将接收到的各电流信号的电流值与LED阈值电流比对，并根据比对的结果，得到对应超出LED阈值电流的LED元件的位置信息，从而可一定程度上提前预知背板在LED元件后点亮情况，达到提前判定缺陷、简化检测流程、提高背板缺陷检测率。\n\n附图说明\n\n[0031]图1为一个实施例中显示背板检测设备的第一结构示意图；\n\n[0032]图2为一个实施例中显示背板检测设备的第二结构示意图；\n\n[0033]图3为一个实施例中显示背板检测设备的第三结构示意图；\n\n[0034]图4为一个实施例中显示背板检测设备的第四结构示意图；\n\n[0035]图5为一个实施例中显示背板检测方法的第一流程示意图；\n\n[0036]图6为一个实施例中显示背板检测方法的第二流程示意图；\n\n[0037]图7为一个实施例中显示背板检测装置的方框示意图。\n\n具体实施方式\n\n[0038]为了便于理解本申请，下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的首选实施例。但是，本申请可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本申请的公开内容更加透彻全面。\n\n[0039]在本申请的描述中，需要说明的是，术语“上”、“下”、“左”、“右”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”、“第三”仅用于描述目的，而不能理解为指示或暗示相对重要性。\n\n[0040]除非另有定义，本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本申请。本文所使用的术语“及/或”包括一个或多个相关的所列项目的任意的和所有的组合。\n\n[0041]在一个实施例中，如图1所示，提供了一种显示背板检测设备，包括：\n\n[0042]载台110，载台110用于可拆卸放置待检测背板120；待检测背板120包含多个LED元件122；\n\n[0043]电流传感电路板130，电流传感电路板130包括多个电流传感器132；各电流传感器132与各LED元件122一一对应连接；\n\n[0044]电源设备140，电源设备140分别连接各电流传感器132；\n\n[0045]控制设备150，控制设备150分别连接各电流传感器132；\n\n[0046]其中，电源设备140向各电流传感器132传输电压信号；各电流传感器132根据电压信号分别检测相应的LED元件122，得到各相应的电流信号，并将各电流信号分别传输给控制设备150；控制设备150依次将接收到的各电流信号的电流值与LED阈值电流比对，并根据比对的结果，得到对应超出LED阈值电流的LED元件122的位置信息。\n\n[0047]具体地，载台110指的是可用来放置待检测背板。载台110的材料可以是金属、塑料或石英石等。载台110的尺寸可根据待检测背板的尺寸而确定。待检测背板120可卡接在载台110上，进而载台110起到固定待检测背板120的作用。待检测背板120可包括多个LED元件122，各个LED元件122可根据矩阵结构排列。在一个示例中，待检测背板120包括至少一行LED元件122和至少一列LED元件122。电流传感电路板130指的是包括多个电流传感器132的电路板。各个电流传感器132可焊接在电路板上。在一个示例中，各个电流传感器132可根据矩阵结构排列；进一步的，各个电流传感器132的矩阵排列结构与各个LED元件122的矩阵排列结构相同。\n\n[0048]在一个示例中，电流传感电路板130包含的电路板的材料可以是PCB、PVC、或金属等。电路板可起到有效固定电流传感器的作用，使得电流传感器132在电路板上不易脱落、走位和偏移等。\n\n[0049]在一个示例中，在实际操作中，将待检测背板120放置在载台110上；将电流传感电路板130与待检测背板120进行对标，使其各个电流传感器132的阴阳极与各个LED元件122的阴阳极一一对应连接，并且待检测背板120与电流传感电路板130能准确压合，正常连接接触。\n\n[0050]进一步的，电源设备140可用来输出电压信号，电压信号可用来向电流传感器132供电。在一个示例中，电源设备140的的电压调节范围为0.5～200V(伏)。控制设备150可用来进行数据处理，还可用来显示数据。控制设备150包含的处理芯片可以但不限于是单片机，DSP处理芯片或RAM处理芯片。\n\n[0051]在一个示例中，位置信息可以是二维坐标信息。例如可基于待检测背板包含的各个LED元件建立二维坐标系。\n\n[0052]具体而言，基于待检测背板120可拆卸放置在载台110上，通过载台110固定待检测背板120；将待检测背板120包含的各个LED元件122与电流传感电路板130包含的各个电流传感器132一一对应连接，将电源设备140分别连接各电流传感器132；控制设备150分别连接各电流传感器132。进而电源设备140向各电流传感器132传输电压信号；各电流传感器132根据电压信号分别检测相应的LED元件122，得到各相应的电流信号，并将各电流信号分别传输给控制设备150；控制设备150依次将接收到的各电流信号的电流值与LED阈值电流比对，并根据比对的结果，得到对应超出LED阈值电流的LED元件122的位置信息，从而可一定程度上提前预知背板在LED元件122后点亮情况，达到提前判定缺陷、简化检测流程、提高背板缺陷检测率。\n\n[0053]上述的显示背板检测设备的实施例中，在实际检测过程中，电流传感电路板包含的各个电流传感器的引脚与待检测背板包含的各个LED元件引脚焊盘对应接触连接，通过电源设备箱各个电流传感器传输预设大小的电压。即可确认对应每个区域LED元件的引脚焊盘的电流传感器，根据各个LED元件引脚焊盘的电流差异，与LED元件正常工作电流范围对比，对超出其正常工作电流范围的LED元件输出对应位置信息，进而可一定程度上提前预知待检测背板在LED元件后点亮情况，达到提前判定缺陷、简化检测流程、提高背板缺陷检测率和明确判定标准。\n\n[0054]在一个具体的实施例中，控制设备根据预设电流等级，划分对应超出LED阈值电流的LED元件，得到对应超出LED阈值电流的LED元件的缺陷等级。\n\n[0055]具体地，预设电流等级可基于电流传感器检测到的电流信号的电流值对应超出LED阈值电流的大小划分。例如，预设电流等级可包括三个等级；超出LED阈值电流百分之五的为第一缺陷等级；超出LED阈值电流百分之二十的为第二缺陷等级；超出LED阈值电流百分之三十的为第三缺陷等级。\n\n[0056]进一步的，控制设备根据预设电流等级，划分对应超出LED阈值电流的LED元件的等级，进而可得到对应超出LED阈值电流的LED元件的缺陷等级，从而可根据LED元件的缺陷等级，方便后续辨识及维修，提高背板缺陷检测率和明确判定标准。\n\n[0057]在一个实施例中，如图2所示，提供了一种显示背板检测设备，该显示背板检测设备包括载台210，电流传感电路板230，电源设备240和控制设备250；载台210用于可拆卸放置待检测背板220；待检测背板220包含多个LED元件222；电流传感电路板230包括多个电流传感器232；基于各电流传感器232与各LED元件222一一对应连接；电源设备240分别连接各电流传感器232；控制设备250分别连接各电流传感器232。该显示背板检测设备还包括设于载台210的固定脚组件260；固定脚组件260用于可拆卸固定待检测背板220。\n\n[0058]其中，固定脚组件260可用来可拆卸固定待检测背板220，固定脚组件260固定设于载台210上。固定脚组件260包括至少2个固定件元件；在一个示例中，固定脚组件260可包含8个固定脚元件，各个固定脚元件分布设置在载台周边，进而待检测背板220能够放置在载台210上。进一步的，固定脚组件260的材料可以是PCB、PVC(Polyvinyl chloride，聚氯乙烯)或金属等。需要说明的是，固定脚组件260需满足可固定且不易划伤基板。\n\n[0059]具体而言，将待检测背板220放置在载台210上，通过固定脚组件260固定待检测背板220；将电流传感电路板230包含的各电流传感器232与待检测背板220包含的LED元件222一一对应连接，进而通过电源设备240向各电流传感器232传输预设大小的电压，从而电流传感器232检测相应的电流信号，根据其相应位置信息的电流大小，实现判定待检测背板220相对应位置的品质。\n\n[0060]上述实施例中，通过改善传统背板检测方式，避免需要人员研判后才能确定缺失是否对点灯有影响，且受制于研判人员的差异及无法直接判定对点灯影响，能够有效判定不良品，确定缺陷点位区域，从而提高判定基板是否满足出货标准效率及准确率；该显示背板检测设备成本低，易移动，可根据不同的待检测背板来制作不同的电流传感电路板。\n\n[0061]在一个具体的实施例中，如图2所示，控制设备250包括处理器252以及连接处理器252的显示屏254；处理器252分别连接各电流传感器232。\n\n[0062]其中，处理器252可以但不限于是单片机、DSP或ARM。显示屏254可以但不影响是LCD显示屏或LED显示屏。\n\n[0063]具体而言，基于显示屏254连接处理器252，处理器252分别连接各电流传感器232，进而处理器252可将电流传感器232传输的电流信号以及处理得到的位置信息等传输给显示屏254，通过显示屏254实现实时显示待检测背板220的检测情况，进而方便使用者根据显示的检测情况进行维修。\n\n[0064]在一个实施例中，如图3所示，提供了一种显示背板检测设备，该显示背板检测设备包括载台310，电流传感电路板330，电源设备340和控制设备350；载台310用于可拆卸放置待检测背板320；待检测背板320包含多个LED元件322；电流传感电路板330包括多个电流传感器332；基于各电流传感器332与各LED元件322一一对应连接；电源设备340分别连接各电流传感器332；控制设备350分别连接各电流传感器332。该显示背板检测设备还包括电流传输电路链接板360；电流传输电路链接板360连接在电流传感电路板330与控制设备350之间。\n\n[0065]其中，电流传输电路链接板360可用来传输电流信号。电流传输电路链接板360包括多个电流信号传输线的集成总线。\n\n[0066]需要说明的是，电流传输电路链接板360满足与电流传感电路板设计线路一一对应，可以起到单独控制每个电流传感器332的电流信号输出。\n\n[0067]具体而言，将待检测背板320放置在载台310上；通过电流传输电路链接板360连接在电流传感电路板330与控制设备350之间；将电流传感电路板330包含的各电流传感器332与待检测背板320包含的LED元件322一一对应连接，进而通过电源设备340向各电流传感器332传输预设大小的电压，从而电流传感器332检测相应的电流信号，并将检测到的电流信号通过电流传输电路链接板360传输给控制设备350。控制设备350根据其相应位置信息的电流大小，实现判定待检测背板320相对应位置的品质。\n\n[0068]上述实施例中，能够有效判定待检测背板的不良品，确定缺陷点位区域；该显示背板检测设备方便移动，相对传统的光学检测设备成本较低；\n\n[0069]需要说明的是，基于本申请，可根据待检测背板的不同种类，更换对应不同种类的检测电路板，满足不同检测需求。\n\n[0070]在一个具体的实施例中，如图3所示，显示背板检测设备还包括连接在电源设备340与电流传感电路板330之间的COF板370。\n\n[0071]其中，COF(Chip On Film，常称覆晶薄膜)板370可用来传输电压信号。\n\n[0072]具体而言，基于COF板370连接在电源设备340与电流传感电路板330之间，电源设备340分别可通过COF板370向电流传感电路板330包含的各电流传感器332传输电压信号；各电流传感器332根据电压信号分别检测相应的LED元件322，得到各相应的电流信号，并将各电流信号分别传输给控制设备350；控制设备350依次将接收到的各电流信号的电流值与LED阈值电流比对，并根据比对的结果，得到对应超出LED阈值电流的LED元件322的位置信息，从而可一定程度上提前预知背板在LED元件322后点亮情况，提高背板缺陷检测率。\n\n[0073]上述实施例中，通过设置COF板，进而方便电源设备与电流传感电路板之间之间的连接，简化了检测过程。\n\n[0074]在一个具体的实施例中，待检测背板为Mini-LED背板或Micro-LED背板。\n\n[0075]其中，Mini-LED背板可以是AM(Active-matrix主动式)Mini-LED背板。\n\n[0076]需要说明的是，待检测背板需满足在SMT前裸露出LED元件的连接焊盘(Bondingpad)和COF板的焊盘(Bonding pad)存在，便于显示背板检测设备对应贴合检测。\n\n[0077]在一个实施例中，如图4所示，提供了一种显示背板检测设备。该显示背板检测设备包括：载台410、电流传感电路板430、电源设备440、控制设备450、电流输出电路链接板460、COF板470和固定脚组件480。其中，电流传感电路板430包括多个电流传感器432；待检测背板为AM mini-LED背板420。AM mini-LED背板420包括多个LED元件422。\n\n[0078]具体地，将待检测的AM mini-LED背板420放置载台410上，由固定脚组件480将AMmini-LED背板4420固定；将电流传感电路板430进行对标，使其电流传感器432的阴阳极与AM mini-LED背板420包含的LED元件422阴阳极焊盘对应良好接触连接，并且AM mini-LED背板420的COF板焊盘与电流传感电路板430的COF板能准确压合，接触连接良好。进而通过电源设备440向电流传感电路板430传输电压信号，从而各电流传感器432向控制设备450传输电流信号，根据其位置的电流大小与LED元件422正常工作的电流判定等级来判定背板相对应位置的品质，是否满足产品合格标准。\n\n[0079]进一步的，电流传感器的阳极脚表面设置有弹性导电胶，具有防划伤基板作用。电流传感器的阴阳极设置有保护层，其中，保护层可以是导电橡胶或PVC等材料，能够满足易导电、不易破损、不易划伤对应的焊盘。\n\n[0080]上述实施例中，改善了传统的背板光学检测方式，避免需要人员研判后才能确定缺失是否对点灯有影响，且受制于研判人员的差异及无法直接判定对点灯影响，从而提高判定基板是否满足产品合格标准效率及准确率，本申请显示背板检测设备成本低，易移动。\n\n[0081]需要说明的是，本申请除了采用电流传感电路板外，还可采用电压传感电路板，不限制其种类及品牌及型号。关于采用电压传感电路板的具体原理可采用上述各实施例提供的显示背板检测设备，在此不再赘述。\n\n[0082]在一个实施例中，如图5所示，提供了一种显示背板检测方法，包括以下步骤：\n\n[0083]步骤S510，依次将接收到的各电流信号的电流值与LED阈值电流比对；电流信号为电流传感器根据电源设备传输的电压信号检测待检测背板相应的LED元件得到。\n\n[0084]步骤S510，根据比对的结果，得到对应超出LED阈值电流的LED元件的位置信息。\n\n[0085]具体而言，通过电源设备向各电流传感器传输预设大小的电压信号，从而电流传感器检测相应的电流信号，并将检测到的电流信号传输给控制设备；控制设备根据接收到的电流信号，依次将接收到的各电流信号的电流值与LED阈值电流比对，并根据比对的结果，得到对应超出LED阈值电流的LED元件的位置信息，从而根据其相应位置信息的电流大小，实现判定待检测背板相对应位置的品质，进而可一定程度上提前预知背板在LED元件后点亮情况，提高背板缺陷检测率，\n\n[0086]上述实施例中，解决了需要人员研判后才能确定缺失是否对点灯有影响，且受制于研判人员的差异及无法直接判定对点灯影响，能够有效判定不良品，确定缺陷点位区域，从而提高判定基板是否满足产品合格标准效率及准确率。\n\n[0087]在一个实施例中，如图6所示，提供了一种显示背板检测方法，包括以下步骤：\n\n[0088]步骤S610，依次将接收到的各电流信号的电流值与LED阈值电流比对；电流信号为电流传感器根据电源设备传输的电压信号检测待检测背板相应的LED元件得到。\n\n[0089]步骤S620，根据比对的结果，得到对应超出LED阈值电流的LED元件的位置信息。\n\n[0090]步骤S630，根据预设电流等级，划分对应超出LED阈值电流的LED元件，得到对应超出LED阈值电流的LED元件的缺陷等级。\n\n[0091]需要说明的是，关于上述显示背板检测方法的具体实现过程可参照上述各实施例中的显示背板检测设备，在此不再赘述。\n\n[0092]应该理解的是，虽然图5-6的流程图中的各个步骤按照箭头的指示依次显示，但是这些步骤并不是必然按照箭头指示的顺序依次执行。除非本文中有明确的说明，这些步骤的执行并没有严格的顺序限制，这些步骤可以以其它的顺序执行。而且，图5-6中的至少一部分步骤可以包括多个子步骤或者多个阶段，这些子步骤或者阶段并不必然是在同一时刻执行完成，而是可以在不同的时刻执行，这些子步骤或者阶段的执行顺序也不必然是依次进行，而是可以与其它步骤或者其它步骤的子步骤或者阶段的至少一部分轮流或者交替地执行。\n\n[0093]在一个实施例中，如图7所示，提供了一种显示背板检测装置，包括电流比对单元710和位置信息获取单元720，其中：\n\n[0094]电流比对单元710，用于依次将接收到的各电流信号的电流值与LED阈值电流比对；电流信号为电流传感器根据电源设备传输的电压信号检测待检测背板相应的LED元件得到。\n\n[0095]位置信息获取单元720，用于根据比对的结果，得到对应超出LED阈值电流的LED元件的位置信息。\n\n[0096]关于显示背板检测装置的具体限定可以参见上文中对于显示背板检测方法的限定，在此不再赘述。上述显示背板检测装置中的各个模块可全部或部分通过软件、硬件及其组合来实现。上述各模块可以硬件形式内嵌于或独立于显示背板检测设备中的处理器中，也可以以软件形式存储于显示背板检测设备中的存储器中，以便于处理器调用执行以上各个模块对应的操作。\n\n[0097]本领域普通技术人员可以理解实现上述实施例方法中的全部或部分流程，是可以通过计算机程序来指令相关的硬件来完成，所述的计算机程序可存储于一非易失性计算机可读取存储介质中，该计算机程序在执行时，可包括如上述各除法运算方法的实施例的流程。其中，本申请所提供的各实施例中所使用的对存储器、存储、数据库或其它介质的任何引用，均可包括非易失性和/或易失性存储器。非易失性存储器可包括只读存储器(ROM)、可编程ROM(PROM)、电可编程ROM(EPROM)、电可擦除可编程ROM(EEPROM)或闪存。易失性存储器可包括随机存取存储器(RAM)或者外部高速缓冲存储器。作为说明而非局限，RAM以多种形式可得，诸如静态RAM(SRAM)、动态RAM(DRAM)、同步DRAM(SDRAM)、双数据率SDRAM(DDRSDRAM)、增强型SDRAM(ESDRAM)、同步链路(Synchlink)DRAM(SLDRAM)、存储器总线(Rambus)直接RAM(RDRAM)、直接存储器总线动态RAM(DRDRAM)、以及存储器总线动态RAM(RDRAM)等。\n\n[0098]以上实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。\n\n[0099]以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对申请专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。', '技术领域\n\n[0001]本申请涉及显示器技术领域，特别是涉及一种显示背板检测设备及其检测方法、装置。\n\n背景技术\n\n[0002]Micro-LED发展成未来显示技术的热点之一，和目前的LCD和OLED显示器件相比，具有反应快、高色域、高PPI、低能耗等优势。但其技术难点多且技术复杂，特别是其关键技术巨量转移技术、LED颗粒微型化成为技术瓶颈，而Mini-LED作为Micro-LED与背板结合的产物，具有高对比度、高显色性能等可与OLED相媲美的特点，成本稍高LCD，仅为OLED的六成左右，相对Micro-LED、OLED更易实施，所以Mini-LED成为各大面板厂商布局热点。\n\n[0003]Mini-LED背板或Micro-LED背板制作和切割过程中，由于制程原因，可能会有背板划伤、污染、膜层残留和过刻等导致的背板短路、断路等缺陷，从而影响LED SMT(SurfaceMounted Technology，表面贴装技术)后的点亮效果。但是传统检测方式AOI&AOH(Automated Optical Inspection，自动光学检测)检测出结果，需要人员研判后才能确定缺失是否对点灯有影响，且受制于研判人员的差异及无法直接判定对点灯影响。\n\n[0004]在实现过程中，发明人发现传统技术中至少存在如下问题：传统的显示背板检测方式通常采用人员研判后才能确定缺失是否对点灯有影响，背板检测过程复杂，且背板缺陷检测率低。\n\n发明内容\n\n[0005]基于此，有必要针对传统的显示背板检测方式通常采用人员研判后才能确定缺失是否对点灯有影响，背板检测过程复杂，且背板缺陷检测率低的技术问题，提供一种显示背板检测设备及其检测方法、装置。\n\n[0006]为了实现上述目的，本发明实施例提供了一种显示背板检测设备，包括：\n\n[0007]载台，载台用于可拆卸放置待检测背板；待检测背板包含多个LED元件；\n\n[0008]电流传感电路板，电流传感电路板包括多个电流传感器；各电流传感器与各LED元件一一对应连接；\n\n[0009]电源设备，电源设备分别连接各电流传感器；\n\n[0010]控制设备，控制设备分别连接各电流传感器；\n\n[0011]其中，电源设备向各电流传感器传输电压信号；各电流传感器根据电压信号分别检测相应的LED元件，得到各相应的电流信号，并将各电流信号分别传输给控制设备；控制设备依次将接收到的各电流信号的电流值与LED阈值电流比对，并根据比对的结果，得到对应超出LED阈值电流的LED元件的位置信息。\n\n[0012]在其中一个实施例中，控制设备根据预设电流等级，划分对应超出LED阈值电流的LED元件，得到对应超出LED阈值电流的LED元件的缺陷等级。\n\n[0013]在其中一个实施例中，还包括设于载台的固定脚组件；\n\n[0014]固定脚组件用于可拆卸固定待检测背板。\n\n[0015]在其中一个实施例中，控制设备包括处理器以及连接处理器的显示屏；\n\n[0016]处理器分别连接各电流传感器。\n\n[0017]在其中一个实施例中，还包括电流传输电路链接板；\n\n[0018]电流传输电路链接板连接在电流传感电路板与控制设备之间。\n\n[0019]在其中一个实施例中，还包括连接在电源设备与电流传感电路板之间的COF板。\n\n[0020]在其中一个实施例中，待检测背板为Mini-LED背板或Micro-LED背板。\n\n[0021]另一方面，本发明实施例还提供了显示背板检测方法，包括以下步骤：\n\n[0022]依次将接收到的各电流信号的电流值与LED阈值电流比对；电流信号为电流传感器根据电源设备传输的电压信号检测待检测背板相应的LED元件得到；\n\n[0023]根据比对的结果，得到对应超出LED阈值电流的LED元件的位置信息。\n\n[0024]在其中一个实施例中，根据比对的结果，得到对应超出LED阈值电流的LED元件的位置信息的步骤之后包括：\n\n[0025]根据预设电流等级，划分对应超出LED阈值电流的LED元件，得到对应超出LED阈值电流的LED元件的缺陷等级。\n\n[0026]另一方面，本发明实施例还提供了显示背板检测装置，该装置包括：\n\n[0027]电流比对单元，用于依次将接收到的各电流信号的电流值与LED阈值电流比对；电流信号为电流传感器根据电源设备传输的电压信号检测待检测背板相应的LED元件得到；\n\n[0028]位置信息获取单元，用于根据比对的结果，得到对应超出LED阈值电流的LED元件的位置信息。\n\n[0029]上述技术方案中的一个技术方案具有如下优点和有益效果：\n\n[0030]上述的显示背板检测设备的各实施例中，包括载台，电流传感电路板，电源设备和控制设备；载台用于可拆卸放置待检测背板；待检测背板包含多个LED元件；电流传感电路板包括多个电流传感器；基于各电流传感器与各LED元件一一对应连接；电源设备分别连接各电流传感器；控制设备分别连接各电流传感器。进而电源设备向各电流传感器传输电压信号；各电流传感器根据电压信号分别检测相应的LED元件，得到各相应的电流信号，并将各电流信号分别传输给控制设备；控制设备依次将接收到的各电流信号的电流值与LED阈值电流比对，并根据比对的结果，得到对应超出LED阈值电流的LED元件的位置信息，从而可一定程度上提前预知背板在LED元件后点亮情况，达到提前判定缺陷、简化检测流程、提高背板缺陷检测率。\n\n附图说明\n\n[0031]图1为一个实施例中显示背板检测设备的第一结构示意图；\n\n[0032]图2为一个实施例中显示背板检测设备的第二结构示意图；\n\n[0033]图3为一个实施例中显示背板检测设备的第三结构示意图；\n\n[0034]图4为一个实施例中显示背板检测设备的第四结构示意图；\n\n[0035]图5为一个实施例中显示背板检测方法的第一流程示意图；\n\n[0036]图6为一个实施例中显示背板检测方法的第二流程示意图；\n\n[0037]图7为一个实施例中显示背板检测装置的方框示意图。\n\n具体实施方式\n\n[0038]为了便于理解本申请，下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的首选实施例。但是，本申请可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本申请的公开内容更加透彻全面。\n\n[0039]在本申请的描述中，需要说明的是，术语“上”、“下”、“左”、“右”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”、“第三”仅用于描述目的，而不能理解为指示或暗示相对重要性。\n\n[0040]除非另有定义，本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本申请。本文所使用的术语“及/或”包括一个或多个相关的所列项目的任意的和所有的组合。\n\n[0041]在一个实施例中，如图1所示，提供了一种显示背板检测设备，包括：\n\n[0042]载台110，载台110用于可拆卸放置待检测背板120；待检测背板120包含多个LED元件122；\n\n[0043]电流传感电路板130，电流传感电路板130包括多个电流传感器132；各电流传感器132与各LED元件122一一对应连接；\n\n[0044]电源设备140，电源设备140分别连接各电流传感器132；\n\n[0045]控制设备150，控制设备150分别连接各电流传感器132；\n\n[0046]其中，电源设备140向各电流传感器132传输电压信号；各电流传感器132根据电压信号分别检测相应的LED元件122，得到各相应的电流信号，并将各电流信号分别传输给控制设备150；控制设备150依次将接收到的各电流信号的电流值与LED阈值电流比对，并根据比对的结果，得到对应超出LED阈值电流的LED元件122的位置信息。\n\n[0047]具体地，载台110指的是可用来放置待检测背板。载台110的材料可以是金属、塑料或石英石等。载台110的尺寸可根据待检测背板的尺寸而确定。待检测背板120可卡接在载台110上，进而载台110起到固定待检测背板120的作用。待检测背板120可包括多个LED元件122，各个LED元件122可根据矩阵结构排列。在一个示例中，待检测背板120包括至少一行LED元件122和至少一列LED元件122。电流传感电路板130指的是包括多个电流传感器132的电路板。各个电流传感器132可焊接在电路板上。在一个示例中，各个电流传感器132可根据矩阵结构排列；进一步的，各个电流传感器132的矩阵排列结构与各个LED元件122的矩阵排列结构相同。\n\n[0048]在一个示例中，电流传感电路板130包含的电路板的材料可以是PCB、PVC、或金属等。电路板可起到有效固定电流传感器的作用，使得电流传感器132在电路板上不易脱落、走位和偏移等。\n\n[0049]在一个示例中，在实际操作中，将待检测背板120放置在载台110上；将电流传感电路板130与待检测背板120进行对标，使其各个电流传感器132的阴阳极与各个LED元件122的阴阳极一一对应连接，并且待检测背板120与电流传感电路板130能准确压合，正常连接接触。\n\n[0050]进一步的，电源设备140可用来输出电压信号，电压信号可用来向电流传感器132供电。在一个示例中，电源设备140的的电压调节范围为0.5～200V(伏)。控制设备150可用来进行数据处理，还可用来显示数据。控制设备150包含的处理芯片可以但不限于是单片机，DSP处理芯片或RAM处理芯片。\n\n[0051]在一个示例中，位置信息可以是二维坐标信息。例如可基于待检测背板包含的各个LED元件建立二维坐标系。\n\n[0052]具体而言，基于待检测背板120可拆卸放置在载台110上，通过载台110固定待检测背板120；将待检测背板120包含的各个LED元件122与电流传感电路板130包含的各个电流传感器132一一对应连接，将电源设备140分别连接各电流传感器132；控制设备150分别连接各电流传感器132。进而电源设备140向各电流传感器132传输电压信号；各电流传感器132根据电压信号分别检测相应的LED元件122，得到各相应的电流信号，并将各电流信号分别传输给控制设备150；控制设备150依次将接收到的各电流信号的电流值与LED阈值电流比对，并根据比对的结果，得到对应超出LED阈值电流的LED元件122的位置信息，从而可一定程度上提前预知背板在LED元件122后点亮情况，达到提前判定缺陷、简化检测流程、提高背板缺陷检测率。\n\n[0053]上述的显示背板检测设备的实施例中，在实际检测过程中，电流传感电路板包含的各个电流传感器的引脚与待检测背板包含的各个LED元件引脚焊盘对应接触连接，通过电源设备箱各个电流传感器传输预设大小的电压。即可确认对应每个区域LED元件的引脚焊盘的电流传感器，根据各个LED元件引脚焊盘的电流差异，与LED元件正常工作电流范围对比，对超出其正常工作电流范围的LED元件输出对应位置信息，进而可一定程度上提前预知待检测背板在LED元件后点亮情况，达到提前判定缺陷、简化检测流程、提高背板缺陷检测率和明确判定标准。\n\n[0054]在一个具体的实施例中，控制设备根据预设电流等级，划分对应超出LED阈值电流的LED元件，得到对应超出LED阈值电流的LED元件的缺陷等级。\n\n[0055]具体地，预设电流等级可基于电流传感器检测到的电流信号的电流值对应超出LED阈值电流的大小划分。例如，预设电流等级可包括三个等级；超出LED阈值电流百分之五的为第一缺陷等级；超出LED阈值电流百分之二十的为第二缺陷等级；超出LED阈值电流百分之三十的为第三缺陷等级。\n\n[0056]进一步的，控制设备根据预设电流等级，划分对应超出LED阈值电流的LED元件的等级，进而可得到对应超出LED阈值电流的LED元件的缺陷等级，从而可根据LED元件的缺陷等级，方便后续辨识及维修，提高背板缺陷检测率和明确判定标准。\n\n[0057]在一个实施例中，如图2所示，提供了一种显示背板检测设备，该显示背板检测设备包括载台210，电流传感电路板230，电源设备240和控制设备250；载台210用于可拆卸放置待检测背板220；待检测背板220包含多个LED元件222；电流传感电路板230包括多个电流传感器232；基于各电流传感器232与各LED元件222一一对应连接；电源设备240分别连接各电流传感器232；控制设备250分别连接各电流传感器232。该显示背板检测设备还包括设于载台210的固定脚组件260；固定脚组件260用于可拆卸固定待检测背板220。\n\n[0058]其中，固定脚组件260可用来可拆卸固定待检测背板220，固定脚组件260固定设于载台210上。固定脚组件260包括至少2个固定件元件；在一个示例中，固定脚组件260可包含8个固定脚元件，各个固定脚元件分布设置在载台周边，进而待检测背板220能够放置在载台210上。进一步的，固定脚组件260的材料可以是PCB、PVC(Polyvinyl chloride，聚氯乙烯)或金属等。需要说明的是，固定脚组件260需满足可固定且不易划伤基板。\n\n[0059]具体而言，将待检测背板220放置在载台210上，通过固定脚组件260固定待检测背板220；将电流传感电路板230包含的各电流传感器232与待检测背板220包含的LED元件222一一对应连接，进而通过电源设备240向各电流传感器232传输预设大小的电压，从而电流传感器232检测相应的电流信号，根据其相应位置信息的电流大小，实现判定待检测背板220相对应位置的品质。\n\n[0060]上述实施例中，通过改善传统背板检测方式，避免需要人员研判后才能确定缺失是否对点灯有影响，且受制于研判人员的差异及无法直接判定对点灯影响，能够有效判定不良品，确定缺陷点位区域，从而提高判定基板是否满足出货标准效率及准确率；该显示背板检测设备成本低，易移动，可根据不同的待检测背板来制作不同的电流传感电路板。\n\n[0061]在一个具体的实施例中，如图2所示，控制设备250包括处理器252以及连接处理器252的显示屏254；处理器252分别连接各电流传感器232。\n\n[0062]其中，处理器252可以但不限于是单片机、DSP或ARM。显示屏254可以但不影响是LCD显示屏或LED显示屏。\n\n[0063]具体而言，基于显示屏254连接处理器252，处理器252分别连接各电流传感器232，进而处理器252可将电流传感器232传输的电流信号以及处理得到的位置信息等传输给显示屏254，通过显示屏254实现实时显示待检测背板220的检测情况，进而方便使用者根据显示的检测情况进行维修。\n\n[0064]在一个实施例中，如图3所示，提供了一种显示背板检测设备，该显示背板检测设备包括载台310，电流传感电路板330，电源设备340和控制设备350；载台310用于可拆卸放置待检测背板320；待检测背板320包含多个LED元件322；电流传感电路板330包括多个电流传感器332；基于各电流传感器332与各LED元件322一一对应连接；电源设备340分别连接各电流传感器332；控制设备350分别连接各电流传感器332。该显示背板检测设备还包括电流传输电路链接板360；电流传输电路链接板360连接在电流传感电路板330与控制设备350之间。\n\n[0065]其中，电流传输电路链接板360可用来传输电流信号。电流传输电路链接板360包括多个电流信号传输线的集成总线。\n\n[0066]需要说明的是，电流传输电路链接板360满足与电流传感电路板设计线路一一对应，可以起到单独控制每个电流传感器332的电流信号输出。\n\n[0067]具体而言，将待检测背板320放置在载台310上；通过电流传输电路链接板360连接在电流传感电路板330与控制设备350之间；将电流传感电路板330包含的各电流传感器332与待检测背板320包含的LED元件322一一对应连接，进而通过电源设备340向各电流传感器332传输预设大小的电压，从而电流传感器332检测相应的电流信号，并将检测到的电流信号通过电流传输电路链接板360传输给控制设备350。控制设备350根据其相应位置信息的电流大小，实现判定待检测背板320相对应位置的品质。\n\n[0068]上述实施例中，能够有效判定待检测背板的不良品，确定缺陷点位区域；该显示背板检测设备方便移动，相对传统的光学检测设备成本较低；\n\n[0069]需要说明的是，基于本申请，可根据待检测背板的不同种类，更换对应不同种类的检测电路板，满足不同检测需求。\n\n[0070]在一个具体的实施例中，如图3所示，显示背板检测设备还包括连接在电源设备340与电流传感电路板330之间的COF板370。\n\n[0071]其中，COF(Chip On Film，常称覆晶薄膜)板370可用来传输电压信号。\n\n[0072]具体而言，基于COF板370连接在电源设备340与电流传感电路板330之间，电源设备340分别可通过COF板370向电流传感电路板330包含的各电流传感器332传输电压信号；各电流传感器332根据电压信号分别检测相应的LED元件322，得到各相应的电流信号，并将各电流信号分别传输给控制设备350；控制设备350依次将接收到的各电流信号的电流值与LED阈值电流比对，并根据比对的结果，得到对应超出LED阈值电流的LED元件322的位置信息，从而可一定程度上提前预知背板在LED元件322后点亮情况，提高背板缺陷检测率。\n\n[0073]上述实施例中，通过设置COF板，进而方便电源设备与电流传感电路板之间之间的连接，简化了检测过程。\n\n[0074]在一个具体的实施例中，待检测背板为Mini-LED背板或Micro-LED背板。\n\n[0075]其中，Mini-LED背板可以是AM(Active-matrix主动式)Mini-LED背板。\n\n[0076]需要说明的是，待检测背板需满足在SMT前裸露出LED元件的连接焊盘(Bondingpad)和COF板的焊盘(Bonding pad)存在，便于显示背板检测设备对应贴合检测。\n\n[0077]在一个实施例中，如图4所示，提供了一种显示背板检测设备。该显示背板检测设备包括：载台410、电流传感电路板430、电源设备440、控制设备450、电流输出电路链接板460、COF板470和固定脚组件480。其中，电流传感电路板430包括多个电流传感器432；待检测背板为AM mini-LED背板420。AM mini-LED背板420包括多个LED元件422。\n\n[0078]具体地，将待检测的AM mini-LED背板420放置载台410上，由固定脚组件480将AMmini-LED背板4420固定；将电流传感电路板430进行对标，使其电流传感器432的阴阳极与AM mini-LED背板420包含的LED元件422阴阳极焊盘对应良好接触连接，并且AM mini-LED背板420的COF板焊盘与电流传感电路板430的COF板能准确压合，接触连接良好。进而通过电源设备440向电流传感电路板430传输电压信号，从而各电流传感器432向控制设备450传输电流信号，根据其位置的电流大小与LED元件422正常工作的电流判定等级来判定背板相对应位置的品质，是否满足产品合格标准。\n\n[0079]进一步的，电流传感器的阳极脚表面设置有弹性导电胶，具有防划伤基板作用。电流传感器的阴阳极设置有保护层，其中，保护层可以是导电橡胶或PVC等材料，能够满足易导电、不易破损、不易划伤对应的焊盘。\n\n[0080]上述实施例中，改善了传统的背板光学检测方式，避免需要人员研判后才能确定缺失是否对点灯有影响，且受制于研判人员的差异及无法直接判定对点灯影响，从而提高判定基板是否满足产品合格标准效率及准确率，本申请显示背板检测设备成本低，易移动。\n\n[0081]需要说明的是，本申请除了采用电流传感电路板外，还可采用电压传感电路板，不限制其种类及品牌及型号。关于采用电压传感电路板的具体原理可采用上述各实施例提供的显示背板检测设备，在此不再赘述。\n\n[0082]在一个实施例中，如图5所示，提供了一种显示背板检测方法，包括以下步骤：\n\n[0083]步骤S510，依次将接收到的各电流信号的电流值与LED阈值电流比对；电流信号为电流传感器根据电源设备传输的电压信号检测待检测背板相应的LED元件得到。\n\n[0084]步骤S510，根据比对的结果，得到对应超出LED阈值电流的LED元件的位置信息。\n\n[0085]具体而言，通过电源设备向各电流传感器传输预设大小的电压信号，从而电流传感器检测相应的电流信号，并将检测到的电流信号传输给控制设备；控制设备根据接收到的电流信号，依次将接收到的各电流信号的电流值与LED阈值电流比对，并根据比对的结果，得到对应超出LED阈值电流的LED元件的位置信息，从而根据其相应位置信息的电流大小，实现判定待检测背板相对应位置的品质，进而可一定程度上提前预知背板在LED元件后点亮情况，提高背板缺陷检测率，\n\n[0086]上述实施例中，解决了需要人员研判后才能确定缺失是否对点灯有影响，且受制于研判人员的差异及无法直接判定对点灯影响，能够有效判定不良品，确定缺陷点位区域，从而提高判定基板是否满足产品合格标准效率及准确率。\n\n[0087]在一个实施例中，如图6所示，提供了一种显示背板检测方法，包括以下步骤：\n\n[0088]步骤S610，依次将接收到的各电流信号的电流值与LED阈值电流比对；电流信号为电流传感器根据电源设备传输的电压信号检测待检测背板相应的LED元件得到。\n\n[0089]步骤S620，根据比对的结果，得到对应超出LED阈值电流的LED元件的位置信息。\n\n[0090]步骤S630，根据预设电流等级，划分对应超出LED阈值电流的LED元件，得到对应超出LED阈值电流的LED元件的缺陷等级。\n\n[0091]需要说明的是，关于上述显示背板检测方法的具体实现过程可参照上述各实施例中的显示背板检测设备，在此不再赘述。\n\n[0092]应该理解的是，虽然图5-6的流程图中的各个步骤按照箭头的指示依次显示，但是这些步骤并不是必然按照箭头指示的顺序依次执行。除非本文中有明确的说明，这些步骤的执行并没有严格的顺序限制，这些步骤可以以其它的顺序执行。而且，图5-6中的至少一部分步骤可以包括多个子步骤或者多个阶段，这些子步骤或者阶段并不必然是在同一时刻执行完成，而是可以在不同的时刻执行，这些子步骤或者阶段的执行顺序也不必然是依次进行，而是可以与其它步骤或者其它步骤的子步骤或者阶段的至少一部分轮流或者交替地执行。\n\n[0093]在一个实施例中，如图7所示，提供了一种显示背板检测装置，包括电流比对单元710和位置信息获取单元720，其中：\n\n[0094]电流比对单元710，用于依次将接收到的各电流信号的电流值与LED阈值电流比对；电流信号为电流传感器根据电源设备传输的电压信号检测待检测背板相应的LED元件得到。\n\n[0095]位置信息获取单元720，用于根据比对的结果，得到对应超出LED阈值电流的LED元件的位置信息。\n\n[0096]关于显示背板检测装置的具体限定可以参见上文中对于显示背板检测方法的限定，在此不再赘述。上述显示背板检测装置中的各个模块可全部或部分通过软件、硬件及其组合来实现。上述各模块可以硬件形式内嵌于或独立于显示背板检测设备中的处理器中，也可以以软件形式存储于显示背板检测设备中的存储器中，以便于处理器调用执行以上各个模块对应的操作。\n\n[0097]本领域普通技术人员可以理解实现上述实施例方法中的全部或部分流程，是可以通过计算机程序来指令相关的硬件来完成，所述的计算机程序可存储于一非易失性计算机可读取存储介质中，该计算机程序在执行时，可包括如上述各除法运算方法的实施例的流程。其中，本申请所提供的各实施例中所使用的对存储器、存储、数据库或其它介质的任何引用，均可包括非易失性和/或易失性存储器。非易失性存储器可包括只读存储器(ROM)、可编程ROM(PROM)、电可编程ROM(EPROM)、电可擦除可编程ROM(EEPROM)或闪存。易失性存储器可包括随机存取存储器(RAM)或者外部高速缓冲存储器。作为说明而非局限，RAM以多种形式可得，诸如静态RAM(SRAM)、动态RAM(DRAM)、同步DRAM(SDRAM)、双数据率SDRAM(DDRSDRAM)、增强型SDRAM(ESDRAM)、同步链路(Synchlink)DRAM(SLDRAM)、存储器总线(Rambus)直接RAM(RDRAM)、直接存储器总线动态RAM(DRDRAM)、以及存储器总线动态RAM(RDRAM)等。\n\n[0098]以上实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。\n\n[0099]以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对申请专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10753, 23807, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其是涉及一种显示装置亮度调节装置及方法。\n\n背景技术\n\n[0002]现有miniLED(迷你发光二极管)显示屏将miniLED放置在阵列基板上，通过阵列基板上的薄膜晶体管(Thin Film Transistor，TFT)驱动miniLED发光，在miniLED的亮度调节中，采用子场控制技术，实现不同灰阶的亮度调节，但在现有的亮度调节过程中，由于亮度的调节以线性的方式进行调节，使得显示屏的亮度无法达到峰值，从而使得显示屏的对比度较差。\n\n[0003]所以，现有miniLED显示屏存在亮度无法达到峰值，导致显示屏的对比度较差的技术问题。\n\n发明内容\n\n[0004]本发明提供一种显示装置亮度调节装置及方法，用于解决现有miniLED显示屏存在亮度无法达到峰值，导致显示屏的对比度较差的技术问题。\n\n[0005]为解决上述问题，本发明提供的技术方案如下：\n\n[0006]本发明提供一种显示装置亮度调节方法，该显示装置亮度调节方法包括：\n\n[0007]获取显示装置待显示图像的亮度信息；\n\n[0008]根据显示装置待显示图像的亮度信息判断显示装置是否满足峰值亮度条件；所述峰值亮度条件为需要使显示装置变为峰值亮度的条件；\n\n[0009]在满足峰值亮度条件时，向显示装置提供第一电压数据，在不满足峰值亮度条件时，向显示装置提供第二电压数据，其中，所述第一电压数据大于所述第二电压数据。\n\n[0010]在本发明提供的显示装置亮度调节方法中，所述获取显示装置待显示图像的亮度信息包括：\n\n[0011]获取显示装置的第一发光面积；\n\n[0012]获取显示装置待显示图像的第二发光面积；\n\n[0013]根据所述第一发光面积和第二发光面积得到显示装置待显示图像的亮度信息。\n\n[0014]在本发明提供的显示装置亮度调节方法中，所述获取显示装置的第一发光面积的步骤包括：\n\n[0015]获取显示装置的显示区的面积；\n\n[0016]获取显示装置的显示区的不发光区域的面积；\n\n[0017]使用所述显示区的面积减去所述显示区的不发光区域的面积得到第一发光面积。\n\n[0018]在本发明提供的显示装置亮度调节方法中，所述获取显示装置待显示图像的第二发光面积的步骤包括：\n\n[0019]确定待显示图像中像素的数量；\n\n[0020]获取单个像素的面积；\n\n[0021]根据待显示图像中像素的数量和所述单个像素的面积确定第二发光面积。\n\n[0022]在本发明提供的显示装置亮度调节方法中，所述根据所述第一发光面积和第二发光面积得到显示装置待显示图像的亮度信息的步骤包括：\n\n[0023]使用第二发光面积除以第一发光面积得到第一数据；\n\n[0024]将所述第一数据作为显示装置待显示图像的亮度信息。\n\n[0025]在本发明提供的显示装置亮度调节方法中，所述根据显示装置待显示图像的亮度信息判断是否满足峰值亮度条件的步骤包括：\n\n[0026]获取第一数据作为显示装置待显示图像的亮度信息；\n\n[0027]设定第二数据作为显示装置的亮度阶段的判断条件；\n\n[0028]比对所述第一数据和第二数据；\n\n[0029]根据所述第一数据与所述第二数据的比对结果判断是否满足峰值亮度条件。\n\n[0030]在本发明提供的显示装置亮度调节方法中，所述在满足峰值亮度条件时，向显示装置提供第一电压数据，在不满足峰值亮度条件时，向显示装置提供第二电压数据，其中，所述第一电压数据大于所述第二电压数据的步骤还包括：\n\n[0031]设定第二电压数据；\n\n[0032]根据所述第二电压数据和预设数据设定第一电压数据。\n\n[0033]在本发明提供的显示装置亮度调节方法中，所述根据所述第二电压数据和预设数据设定第一电压数据的步骤包括：\n\n[0034]获取第二电压数据；\n\n[0035]根据所述第一数据设定预设数据；\n\n[0036]根据所述第二电压数据和预设数据设定第一电压数据。\n\n[0037]在本发明提供的显示装置亮度调节方法中，所述获取显示装置待显示图像的亮度信息包括：\n\n[0038]获取显示装置的第一区域的第三发光面积；\n\n[0039]获取显示装置的待显示图像第四发光面积；\n\n[0040]根据所述第三发光面积和所述第四发光面积得到显示装置的待显示图像的亮度信息。\n\n[0041]同时，本发明提供一种显示装置亮度调节装置，该显示装置亮度调节装置包括：\n\n[0042]亮度信息获取模块，用于获取显示装置待显示图像的亮度信息；\n\n[0043]判断模块，用于根据显示装置待显示图像的亮度信息判断显示装置是否满足峰值亮度条件；所述峰值亮度条件为需要使显示装置变为峰值亮度的条件；\n\n[0044]数据输入模块，用于在满足峰值亮度条件时，向显示装置提供第一电压数据，在不满足峰值亮度条件时，向显示装置提供第二电压数据，所述第一电压数据大于所述第二电压数据。\n\n[0045]有益效果：本发明提供一种显示装置亮度调节装置及方法，该显示装置亮度调节方法包括获取显示装置待显示图像的亮度信息；根据显示装置待显示图像的亮度信息判断是否满足峰值亮度条件；在满足峰值亮度条件时，向显示装置提供第一电压数据，在不满足峰值亮度条件时，向显示装置提供第二电压数据，其中，所述第一电压数据大于所述第二电压数据；通过在向显示装置提供电压数据前，先判断是否满足峰值亮度条件，在满足峰值亮度条件时，向显示装置提供第一电压数据，在不满足峰值亮度条件时，向显示装置提供第二电压数据，从而使得在满足峰值亮度条件时，提供大于第二电压数据的第一电压数据，使得在显示装置待显示图像发光时发光亮度提高，甚至达到峰值亮度，提高对比度，解决了现有miniLED显示屏存在亮度无法达到峰值，导致显示屏的对比度较差的技术问题。\n\n附图说明\n\n[0046]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0047]图1为本发明实施例提供的显示装置亮度调节方法的流程图；\n\n[0048]图2为本发明实施例提供的显示装置亮度调节装置的示意图。\n\n具体实施方式\n\n[0049]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0050]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0051]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0052]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0053]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0054]本发明针对现有miniLED显示屏存在亮度无法达到峰值，导致显示屏的对比度较差的技术问题，本发明实施例用以解决该问题。\n\n[0055]如图1所示，本发明实施例提供一种显示装置亮度调节方法，该显示装置亮度调节方法包括：\n\n[0056]S1，获取显示装置待显示图像的亮度信息；\n\n[0057]S2，根据显示装置待显示图像的亮度信息判断是否满足峰值亮度条件；\n\n[0058]S3，在满足峰值亮度条件时，向显示装置提供第一电压数据，在不满足峰值亮度条件时，向显示装置提供第二电压数据，其中，所述第一电压数据大于所述第二电压数据。\n\n[0059]本发明实施例提供一种显示装置亮度调节方法，该显示装置亮度调节方法包括获取显示装置待显示图像的亮度信息；根据显示装置待显示图像的亮度信息判断是否满足峰值亮度条件；在满足峰值亮度条件时，向显示装置提供第一电压数据，在不满足峰值亮度条件时，向显示装置提供第二电压数据，其中，所述第一电压数据大于所述第二电压数据；通过在向显示装置提供电压数据前，先判断是否满足峰值亮度条件，在满足峰值亮度条件时，向显示装置提供第一电压数据，在不满足峰值亮度条件时，向显示装置提供第二电压数据，从而使得在满足峰值亮度条件时，提供大于第二电压数据的第一电压数据，使得在显示装置待显示图像发光时发光亮度提高，甚至达到峰值亮度，提高对比度，解决了现有miniLED显示屏存在亮度无法达到峰值，导致显示屏的对比度较差的技术问题。\n\n[0060]需要说明的是，显示装置的亮度信息包括显示装置的亮度的大小，显示装置的亮度区域的大小、以及亮的区域与总的区域的比例，本发明实施例不限于此，在下述实施例中对亮度信息进行解释，根据显示装置的亮度信息可以得到显示装置的阶段，从而提供相应的电压数据，使得显示装置的亮度能够达到峰值。\n\n[0061]在一种实施例中，所述获取显示装置的亮度信息包括：\n\n[0062]获取显示装置的第一发光面积；\n\n[0063]获取显示装置待显示图像的第二发光面积；\n\n[0064]根据所述第一发光面积和第二发光面积得到显示装置待显示图像的亮度信息；在获取显示装置待显示图像的亮度信息时，可以根据显示装置待显示图像的发光面积与显示装置的发光面积确定显示装置待显示图像的亮度信息，即可以通过待显示图像的面积的大小确定待显示图像的亮度信息，或者通过待显示图像的发光面积占总发光面积的比例确定待显示图像的亮度信息，获取显示装置的第一发光面积和待显示图像的第二发光面积，根据第一发光面积和第二发光面积的大小比较或者关系进行分析，得到显示装置的亮度信息。\n\n[0065]在一种实施例中，所述获取显示装置的第一发光面积的步骤包括：\n\n[0066]获取显示装置的显示区的面积；\n\n[0067]获取显示装置的显示区的不发光区域的面积；\n\n[0068]使用所述显示区的面积减去所述显示区的不发光区域的面积得到第一发光面积；将显示区中能够发光的区域作为第一发光面积，先获取到显示区的面积大小，然后获取到显示区内不发光区域的面积的大小，从而得到显示区内能够发光的区域的大小，即获取到能发光的区域的总面积。\n\n[0069]在一种实施例中，所述获取显示装置待显示图像的第二发光面积的步骤包括：\n\n[0070]确定待显示图像中像素的数量；\n\n[0071]获取单个像素的面积；\n\n[0072]根据待显示图像中像素的数量和所述单个像素的面积确定第二发光面积；在确定第二发光面积时，由于显示装置的分辨率确定，尺寸确定，可以根据显示装置的数据确定显示装置中单个像素的面积，然后在确定待显示图像中的像素的数量后，根据像素的数据与单个像素的面积，确定待显示图像的第二发光面积，，即通过显示区内的最大发光面积和实际发光面积的关系确定显示装置是否满足峰值亮度条件，即根据实际过程中显示装置被点亮的部分的面积大小与最大发光面积大小的关系得到显示装置的亮度信息，从而可以依据显示装置被点亮的部分的面积确定是否需要使得显示装置变为峰值亮度。\n\n[0073]在一种实施例中，所述根据所述第一发光面积和第二发光面积得到显示装置待显示图像的亮度信息的步骤包括：\n\n[0074]使用第二发光面积除以第一发光面积得到第一数据；\n\n[0075]将所述第一数据作为显示装置待显示图像的亮度信息；通过第二发光面积除以第一发光面积，即实际发光面积与最大发光面积的比值得到第一数据，即得到了实际发光面积占最大发光面积的比例，从而可以依据所述比例确定是否需要使得显示装置达到峰值亮度，例如在显示装置点亮的区域较大时，即第一数据较大时，无需使显示装置达到峰值亮度，即可得到较高的对比度，而在显示装置点亮的区域较小时，即第一数据较小时，可以使得显示装置达到峰值亮度，从而提高不同区域的画面的对比度，当然，也可以使得在显示装置点亮的区域较大时，使显示装置达到峰值亮度，而在显示装置点亮的区域较小时，无需使显示装置达到峰值亮度，本发明实施例不限于此，根据实际点亮显示装置时的需求确定。\n\n[0076]在一种实施例中，所述根据显示装置待显示图像的亮度信息判断是否满足峰值亮度条件的步骤包括：\n\n[0077]获取第一数据作为显示装置待显示图像的亮度信息；\n\n[0078]设定第二数据作为显示装置的亮度阶段的判断条件；\n\n[0079]比对所述第一数据和第二数据；\n\n[0080]根据所述第一数据与所述第二数据的比对结果判断是否满足峰值亮度条件；在得到第一数据后，可以设定第二数据作为判断条件，比对第一数据和第二数据，例如使用第一数据减去第二数据，在第一数据与第二数据的差值大于预设值或者大于零时，判断满足峰值亮度条件或者不满足峰值亮度条件，从而向显示装置输出相应的电压数据，使得显示装置处于峰值亮度或者不处于峰值亮度。\n\n[0081]在一种实施例中，所述在满足峰值亮度条件时，向显示装置提供第一电压数据，在不满足峰值亮度条件时，向显示装置提供第二电压数据，其中，所述第一电压数据大于所述第二电压数据的步骤还包括：\n\n[0082]设定第二电压数据；\n\n[0083]根据所述第二电压数据和预设数据设定第一电压数据；在输出第一电压数据和第二电压数据前，需要先设定第一电压数据和第二电压数据，例如设定第二电压数据时，可以相对于现有技术略微增大电压数据的大小，然后在设定第一电压数据时，相对于第二电压数据，使得第一电压数据增大，甚至第一电压数据的值能够使得显示装置达到峰值亮度，从而相应的增大显示装置的对比度；该预设数据可以根据观看显示装置时的感受来确定，或者根据亮度的大小对应的对比度的大小来设定，使得预设值对第二电压数据进行补充，从而使得第一电压数据增大，从而使得显示装置的对比度增大，显示装置的亮度能够达峰值，从而使得显示装置的对比度较大提升。\n\n[0084]在一种实施例中，所述根据所述第二电压数据和预设数据设定第一电压数据的步骤包括：\n\n[0085]获取第二电压数据；\n\n[0086]根据所述第一数据设定预设数据；\n\n[0087]根据所述第二电压数据和预设数据设定第一电压数据。\n\n[0088]在一种实施例中，所述获取显示装置的亮度信息包括：\n\n[0089]获取显示装置的第一区域的第三发光面积；\n\n[0090]获取显示装置的待显示图像的第四发光面积；\n\n[0091]根据所述第三发光面积和所述第四发光面积得到显示装置的待显示图像的亮度信息；在对显示装置输入电压数据，从而调节亮度时，可以对显示装置的部分区域进行调节，例如，获取显示装置的某个区域的最大发光面积，即该区域能够发光的区域的面积，然后获取显示装置的待显示图像，统计该区域发光的部分的面积，从而根据该区域发光的部分的面积与最大发光面积得到显示装置的待显示图像的亮度信息，例如第一区域待显示图像的亮度信息，根据该亮度信息判断该区域是否满足峰值亮度条件，相应的在该区域满足峰值亮度条件时，向该区域提供第一电压数据，在该区域不满足峰值亮度条件时，向该区域提供第二电压数据，实现该区域的峰值亮度，提高该区域的对比度。\n\n[0092]在一种实施例中，所述获取显示装置的第一区域的第三发光面积的步骤包括：\n\n[0093]获取显示装置的第一区域的显示面积；\n\n[0094]获取显示装置的第一区域的不发光区域的面积；\n\n[0095]使用所述第一区域的显示面板减去所述第一区域的不发光区域的面积得到第三发光面积。\n\n[0096]如图2所示，本发明实施例提供一种显示装置亮度调节装置，该显示装置亮度调节装置包括：\n\n[0097]亮度信息获取模块11，用于获取显示装置14的待显示图像的亮度信息；\n\n[0098]判断模块12，用于根据显示装置14的待显示图像的亮度信息判断是否满足峰值亮度条件；\n\n[0099]数据输入模块13，用于在满足峰值亮度条件时，向显示装置14提供第一电压数据，在不满足峰值亮度条件时，向显示装置14提供第二电压数据，所述第一电压数据大于所述第二电压数据。\n\n[0100]本发明实施例提供一种显示装置亮度调节装置，该显示装置亮度调节装置包括亮度信息获取模块、判断模块、数据输入模块，所述亮度信息获取模块用于获取显示装置待显示图像的亮度信息；所述判断模块用于根据显示装置待显示图像的亮度信息判断显示装置是否满足峰值亮度条件；所述数据输入模块用于在满足峰值亮度条件时，向显示装置提供第一电压数据，在不满足峰值亮度条件时，向显示装置提供第二电压数据，所述第一电压数据大于所述第二电压数据；通过在向显示装置提供电压数据前，先判断显示装置是否满足峰值亮度条件，在满足峰值亮度条件时，向显示装置提供第一电压数据，在不满足峰值亮度条件时，向显示装置提供第二电压数据，从而使得在显示装置满足峰值亮度条件时，提供大于第二电压数据的第一电压数据，使得在显示装置发光时发光亮度提高，甚至达到峰值亮度，提高对比度，解决了现有miniLED显示屏存在亮度无法达到峰值，导致显示屏的对比度较差的技术问题。\n\n[0101]在一种实施例中，所述亮度信息获取模块包括：\n\n[0102]第一亮度信息获取模块，用于获取显示装置的第一发光面积；\n\n[0103]第二亮度信息获取模块，用于获取显示装置待显示图像的第二发光面积；\n\n[0104]第一亮度信息处理模块，用于根据所述第一发光面积和第二发光面积得到显示装置待显示图像的亮度信息。\n\n[0105]在一种实施例中，所述第一亮度信息获取模块包括：\n\n[0106]第一面积获取模块，用于获取显示装置的显示区的面积；\n\n[0107]第二面积获取模块，用于获取显示装置的显示区的不发光区域的面积；\n\n[0108]面积处理模块，用于使用所述显示区的面积减去所述显示区的不发光区域的面积得到第一发光面积。\n\n[0109]在一种实施例中，所述第二亮度信息获取模块包括：\n\n[0110]像素信息获取模块，用于确定待显示图像中像素的数量；\n\n[0111]像素面积模块，用于获取单个像素的面积；\n\n[0112]像素面积处理模块，用于根据待显示图像中像素的数量和所述单个像素的面积确定第二发光面积。\n\n[0113]在一种实施例中，所述第一亮度信息处理模块包括：\n\n[0114]第一处理模块，用于使用第二发光面积除以第一发光面积得到第一数据；\n\n[0115]第二处理模块，用于将所述第一数据作为显示装置待显示图像的亮度信息。\n\n[0116]在一种实施例中，所述判断模块包括：\n\n[0117]第一数据获取模块，用于获取第一数据作为显示装置待显示图像的亮度信息；\n\n[0118]设定模块，用于设定第二数据作为显示装置的亮度阶段的判断条件；\n\n[0119]比对模块，用于比对所述第一数据和第二数据；\n\n[0120]比对结果处理模块，用于根据所述第一数据与所述第二数据的比对结果判断是否满足峰值亮度条件。\n\n[0121]在一种实施例中，所述数据输入模块包括：\n\n[0122]第二电压数据设定模块，用于设定第二电压数据；\n\n[0123]第一电压数据设定模块，用于根据所述第二电压数据和预设数据设定第一电压数据。\n\n[0124]在一种实施例中，所述第一电压数据设定模块包括：\n\n[0125]第二电压数据获取模块，用于获取第二电压数据；\n\n[0126]预设数据设定模块，用于根据所述第一数据设定预设数据；\n\n[0127]第一电压数据确定模块，用于根据所述第二电压数据和预设数据设定第一电压数据。\n\n[0128]在一种实施例中，所述亮度信息获取模块包括：\n\n[0129]第三亮度信息获取模块，用于获取显示装置的第一区域的第三发光面积；\n\n[0130]第四亮度信息获取模块，用于获取显示装置的待显示图像的第四发光面积；\n\n[0131]第二亮度信息处理模块，用于根据所述第三发光面积和所述第四发光面积得到显示装置的待显示图像的亮度信息。\n\n[0132]在一种实施例中，所述第三亮度信息获取模块包括：\n\n[0133]第一区域显示面板获取模块，用于获取显示装置的第一区域的显示面积；\n\n[0134]第一区域不发光面积获取模块，用于获取显示装置的第一区域的不发光区域的面积；\n\n[0135]第一区域处理模块，用于使用所述第一区域的显示面板减去所述显示区的不发光区域的面积得到第三发光面积。\n\n[0136]如表一所示，现有技术的电压数据与亮度对比表如下，B2表示第一灰阶时亮度的大小，电压数据为以二进制输入的数据值，现有显示装置中，由于电压数据与亮度一一对应，在不同的灰阶中，电压数据线性变动，未考虑到实际需要的亮度，从而导致显示屏的亮度无法达到峰值，使得显示屏的对比度较差。\n\n[0137]\n\n[0138]\n\n[0139]表一\n\n[0140]如表二所示，本发明实施例提供的电压数据与亮度的对比表如下，B1表示第一灰阶时的亮度大小，电压数据为以二进制输入的数据值，从表中可以看到，对于64灰阶的显示装置，会存在64灰阶满足峰值条件的电压数据和64灰阶不满足峰值条件的电压数据，从表二中可以看出，在满足峰值亮度条件后，对于第一灰阶的电压数据增大，使得显示装置的亮度增大两倍，相应的从第二灰阶至第六十三灰阶的亮度增大，即相较于不满足峰值亮度条件时显示装置的亮度，满足峰值亮度条件的显示装置的亮度提升两倍左右，从而使得显示装置达到峰值亮度，提高对比度。\n\n[0141]\n\n[0142]表二\n\n[0143]需要说明的是，表一与表二中均未标出亮度为0的时候的灰阶。\n\n[0144]需要说明的是，表一和表二仅代表现有技术和本发明实施例中64灰阶的显示装置的亮度对比，但本发明实施例不限于此，对于其他灰阶例如256灰阶的显示装置也有相对应的电压数据输入，同时，满足峰值亮度条件的电压数据相较于不满足峰值亮度条件的电压数据不限于两倍，可以是其他倍数，例如3倍、1.5倍等，以实际能达到峰值亮度的电压数据决定。\n\n[0145]在一种场景中，亮度信息是否满足峰值亮度条件可如下表所示判断，如表三、表四所示，A1和A2表示该处电压数据，且A1、A2代表该处点亮，00代表该处不亮，设定峰值亮度条件为点亮的部分所占面积等于或者小于4％，则表三中点亮部分所占面积等于4％，满足峰值亮度条件，则可将A1更改为A2进行输入，其中A2大于A1，从而达到峰值亮度，提高对比度。\n\n[0146]000000000000A1000000000000000000000000000000000000\n\n[0147]表三\n\n[0148]000000000000A2000000000000000000000000000000000000\n\n[0149]表四\n\n[0150]根据以上实施例可知：\n\n[0151]本发明实施例提供一种显示装置亮度调节装置及方法，该显示装置亮度调节方法包括获取显示装置待显示图像的亮度信息；根据显示装置待显示图像的亮度信息判断是否满足峰值亮度条件；在满足峰值亮度条件时，向显示装置提供第一电压数据，在不满足峰值亮度条件时，向显示装置提供第二电压数据，其中，所述第一电压数据大于所述第二电压数据；通过在向显示装置提供电压数据前，先判断显示装置是否满足峰值亮度条件，在满足峰值亮度条件时，向显示装置提供第一电压数据，在不满足峰值亮度条件时，向显示装置提供第二电压数据，从而使得在显示装置满足峰值亮度条件时，提供大于第二电压数据的第一电压数据，使得在显示装置待显示图像发光时发光亮度提高，甚至达到峰值亮度，提高对比度，解决了现有miniLED显示屏存在亮度无法达到峰值，导致显示屏的对比度较差的技术问题。\n\n[0152]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其是涉及一种显示装置亮度调节装置及方法。\n\n背景技术\n\n[0002]现有miniLED(迷你发光二极管)显示屏将miniLED放置在阵列基板上，通过阵列基板上的薄膜晶体管(Thin Film Transistor，TFT)驱动miniLED发光，在miniLED的亮度调节中，采用子场控制技术，实现不同灰阶的亮度调节，但在现有的亮度调节过程中，由于亮度的调节以线性的方式进行调节，使得显示屏的亮度无法达到峰值，从而使得显示屏的对比度较差。\n\n[0003]所以，现有miniLED显示屏存在亮度无法达到峰值，导致显示屏的对比度较差的技术问题。\n\n发明内容\n\n[0004]本发明提供一种显示装置亮度调节装置及方法，用于解决现有miniLED显示屏存在亮度无法达到峰值，导致显示屏的对比度较差的技术问题。\n\n[0005]为解决上述问题，本发明提供的技术方案如下：\n\n[0006]本发明提供一种显示装置亮度调节方法，该显示装置亮度调节方法包括：\n\n[0007]获取显示装置待显示图像的亮度信息；\n\n[0008]根据显示装置待显示图像的亮度信息判断显示装置是否满足峰值亮度条件；所述峰值亮度条件为需要使显示装置变为峰值亮度的条件；\n\n[0009]在满足峰值亮度条件时，向显示装置提供第一电压数据，在不满足峰值亮度条件时，向显示装置提供第二电压数据，其中，所述第一电压数据大于所述第二电压数据。\n\n[0010]在本发明提供的显示装置亮度调节方法中，所述获取显示装置待显示图像的亮度信息包括：\n\n[0011]获取显示装置的第一发光面积；\n\n[0012]获取显示装置待显示图像的第二发光面积；\n\n[0013]根据所述第一发光面积和第二发光面积得到显示装置待显示图像的亮度信息。\n\n[0014]在本发明提供的显示装置亮度调节方法中，所述获取显示装置的第一发光面积的步骤包括：\n\n[0015]获取显示装置的显示区的面积；\n\n[0016]获取显示装置的显示区的不发光区域的面积；\n\n[0017]使用所述显示区的面积减去所述显示区的不发光区域的面积得到第一发光面积。\n\n[0018]在本发明提供的显示装置亮度调节方法中，所述获取显示装置待显示图像的第二发光面积的步骤包括：\n\n[0019]确定待显示图像中像素的数量；\n\n[0020]获取单个像素的面积；\n\n[0021]根据待显示图像中像素的数量和所述单个像素的面积确定第二发光面积。\n\n[0022]在本发明提供的显示装置亮度调节方法中，所述根据所述第一发光面积和第二发光面积得到显示装置待显示图像的亮度信息的步骤包括：\n\n[0023]使用第二发光面积除以第一发光面积得到第一数据；\n\n[0024]将所述第一数据作为显示装置待显示图像的亮度信息。\n\n[0025]在本发明提供的显示装置亮度调节方法中，所述根据显示装置待显示图像的亮度信息判断是否满足峰值亮度条件的步骤包括：\n\n[0026]获取第一数据作为显示装置待显示图像的亮度信息；\n\n[0027]设定第二数据作为显示装置的亮度阶段的判断条件；\n\n[0028]比对所述第一数据和第二数据；\n\n[0029]根据所述第一数据与所述第二数据的比对结果判断是否满足峰值亮度条件。\n\n[0030]在本发明提供的显示装置亮度调节方法中，所述在满足峰值亮度条件时，向显示装置提供第一电压数据，在不满足峰值亮度条件时，向显示装置提供第二电压数据，其中，所述第一电压数据大于所述第二电压数据的步骤还包括：\n\n[0031]设定第二电压数据；\n\n[0032]根据所述第二电压数据和预设数据设定第一电压数据。\n\n[0033]在本发明提供的显示装置亮度调节方法中，所述根据所述第二电压数据和预设数据设定第一电压数据的步骤包括：\n\n[0034]获取第二电压数据；\n\n[0035]根据所述第一数据设定预设数据；\n\n[0036]根据所述第二电压数据和预设数据设定第一电压数据。\n\n[0037]在本发明提供的显示装置亮度调节方法中，所述获取显示装置待显示图像的亮度信息包括：\n\n[0038]获取显示装置的第一区域的第三发光面积；\n\n[0039]获取显示装置的待显示图像第四发光面积；\n\n[0040]根据所述第三发光面积和所述第四发光面积得到显示装置的待显示图像的亮度信息。\n\n[0041]同时，本发明提供一种显示装置亮度调节装置，该显示装置亮度调节装置包括：\n\n[0042]亮度信息获取模块，用于获取显示装置待显示图像的亮度信息；\n\n[0043]判断模块，用于根据显示装置待显示图像的亮度信息判断显示装置是否满足峰值亮度条件；所述峰值亮度条件为需要使显示装置变为峰值亮度的条件；\n\n[0044]数据输入模块，用于在满足峰值亮度条件时，向显示装置提供第一电压数据，在不满足峰值亮度条件时，向显示装置提供第二电压数据，所述第一电压数据大于所述第二电压数据。\n\n[0045]有益效果：本发明提供一种显示装置亮度调节装置及方法，该显示装置亮度调节方法包括获取显示装置待显示图像的亮度信息；根据显示装置待显示图像的亮度信息判断是否满足峰值亮度条件；在满足峰值亮度条件时，向显示装置提供第一电压数据，在不满足峰值亮度条件时，向显示装置提供第二电压数据，其中，所述第一电压数据大于所述第二电压数据；通过在向显示装置提供电压数据前，先判断是否满足峰值亮度条件，在满足峰值亮度条件时，向显示装置提供第一电压数据，在不满足峰值亮度条件时，向显示装置提供第二电压数据，从而使得在满足峰值亮度条件时，提供大于第二电压数据的第一电压数据，使得在显示装置待显示图像发光时发光亮度提高，甚至达到峰值亮度，提高对比度，解决了现有miniLED显示屏存在亮度无法达到峰值，导致显示屏的对比度较差的技术问题。\n\n附图说明\n\n[0046]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0047]图1为本发明实施例提供的显示装置亮度调节方法的流程图；\n\n[0048]图2为本发明实施例提供的显示装置亮度调节装置的示意图。\n\n具体实施方式\n\n[0049]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0050]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0051]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0052]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0053]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0054]本发明针对现有miniLED显示屏存在亮度无法达到峰值，导致显示屏的对比度较差的技术问题，本发明实施例用以解决该问题。\n\n[0055]如图1所示，本发明实施例提供一种显示装置亮度调节方法，该显示装置亮度调节方法包括：\n\n[0056]S1，获取显示装置待显示图像的亮度信息；\n\n[0057]S2，根据显示装置待显示图像的亮度信息判断是否满足峰值亮度条件；\n\n[0058]S3，在满足峰值亮度条件时，向显示装置提供第一电压数据，在不满足峰值亮度条件时，向显示装置提供第二电压数据，其中，所述第一电压数据大于所述第二电压数据。\n\n[0059]本发明实施例提供一种显示装置亮度调节方法，该显示装置亮度调节方法包括获取显示装置待显示图像的亮度信息；根据显示装置待显示图像的亮度信息判断是否满足峰值亮度条件；在满足峰值亮度条件时，向显示装置提供第一电压数据，在不满足峰值亮度条件时，向显示装置提供第二电压数据，其中，所述第一电压数据大于所述第二电压数据；通过在向显示装置提供电压数据前，先判断是否满足峰值亮度条件，在满足峰值亮度条件时，向显示装置提供第一电压数据，在不满足峰值亮度条件时，向显示装置提供第二电压数据，从而使得在满足峰值亮度条件时，提供大于第二电压数据的第一电压数据，使得在显示装置待显示图像发光时发光亮度提高，甚至达到峰值亮度，提高对比度，解决了现有miniLED显示屏存在亮度无法达到峰值，导致显示屏的对比度较差的技术问题。\n\n[0060]需要说明的是，显示装置的亮度信息包括显示装置的亮度的大小，显示装置的亮度区域的大小、以及亮的区域与总的区域的比例，本发明实施例不限于此，在下述实施例中对亮度信息进行解释，根据显示装置的亮度信息可以得到显示装置的阶段，从而提供相应的电压数据，使得显示装置的亮度能够达到峰值。\n\n[0061]在一种实施例中，所述获取显示装置的亮度信息包括：\n\n[0062]获取显示装置的第一发光面积；\n\n[0063]获取显示装置待显示图像的第二发光面积；\n\n[0064]根据所述第一发光面积和第二发光面积得到显示装置待显示图像的亮度信息；在获取显示装置待显示图像的亮度信息时，可以根据显示装置待显示图像的发光面积与显示装置的发光面积确定显示装置待显示图像的亮度信息，即可以通过待显示图像的面积的大小确定待显示图像的亮度信息，或者通过待显示图像的发光面积占总发光面积的比例确定待显示图像的亮度信息，获取显示装置的第一发光面积和待显示图像的第二发光面积，根据第一发光面积和第二发光面积的大小比较或者关系进行分析，得到显示装置的亮度信息。\n\n[0065]在一种实施例中，所述获取显示装置的第一发光面积的步骤包括：\n\n[0066]获取显示装置的显示区的面积；\n\n[0067]获取显示装置的显示区的不发光区域的面积；\n\n[0068]使用所述显示区的面积减去所述显示区的不发光区域的面积得到第一发光面积；将显示区中能够发光的区域作为第一发光面积，先获取到显示区的面积大小，然后获取到显示区内不发光区域的面积的大小，从而得到显示区内能够发光的区域的大小，即获取到能发光的区域的总面积。\n\n[0069]在一种实施例中，所述获取显示装置待显示图像的第二发光面积的步骤包括：\n\n[0070]确定待显示图像中像素的数量；\n\n[0071]获取单个像素的面积；\n\n[0072]根据待显示图像中像素的数量和所述单个像素的面积确定第二发光面积；在确定第二发光面积时，由于显示装置的分辨率确定，尺寸确定，可以根据显示装置的数据确定显示装置中单个像素的面积，然后在确定待显示图像中的像素的数量后，根据像素的数据与单个像素的面积，确定待显示图像的第二发光面积，，即通过显示区内的最大发光面积和实际发光面积的关系确定显示装置是否满足峰值亮度条件，即根据实际过程中显示装置被点亮的部分的面积大小与最大发光面积大小的关系得到显示装置的亮度信息，从而可以依据显示装置被点亮的部分的面积确定是否需要使得显示装置变为峰值亮度。\n\n[0073]在一种实施例中，所述根据所述第一发光面积和第二发光面积得到显示装置待显示图像的亮度信息的步骤包括：\n\n[0074]使用第二发光面积除以第一发光面积得到第一数据；\n\n[0075]将所述第一数据作为显示装置待显示图像的亮度信息；通过第二发光面积除以第一发光面积，即实际发光面积与最大发光面积的比值得到第一数据，即得到了实际发光面积占最大发光面积的比例，从而可以依据所述比例确定是否需要使得显示装置达到峰值亮度，例如在显示装置点亮的区域较大时，即第一数据较大时，无需使显示装置达到峰值亮度，即可得到较高的对比度，而在显示装置点亮的区域较小时，即第一数据较小时，可以使得显示装置达到峰值亮度，从而提高不同区域的画面的对比度，当然，也可以使得在显示装置点亮的区域较大时，使显示装置达到峰值亮度，而在显示装置点亮的区域较小时，无需使显示装置达到峰值亮度，本发明实施例不限于此，根据实际点亮显示装置时的需求确定。\n\n[0076]在一种实施例中，所述根据显示装置待显示图像的亮度信息判断是否满足峰值亮度条件的步骤包括：\n\n[0077]获取第一数据作为显示装置待显示图像的亮度信息；\n\n[0078]设定第二数据作为显示装置的亮度阶段的判断条件；\n\n[0079]比对所述第一数据和第二数据；\n\n[0080]根据所述第一数据与所述第二数据的比对结果判断是否满足峰值亮度条件；在得到第一数据后，可以设定第二数据作为判断条件，比对第一数据和第二数据，例如使用第一数据减去第二数据，在第一数据与第二数据的差值大于预设值或者大于零时，判断满足峰值亮度条件或者不满足峰值亮度条件，从而向显示装置输出相应的电压数据，使得显示装置处于峰值亮度或者不处于峰值亮度。\n\n[0081]在一种实施例中，所述在满足峰值亮度条件时，向显示装置提供第一电压数据，在不满足峰值亮度条件时，向显示装置提供第二电压数据，其中，所述第一电压数据大于所述第二电压数据的步骤还包括：\n\n[0082]设定第二电压数据；\n\n[0083]根据所述第二电压数据和预设数据设定第一电压数据；在输出第一电压数据和第二电压数据前，需要先设定第一电压数据和第二电压数据，例如设定第二电压数据时，可以相对于现有技术略微增大电压数据的大小，然后在设定第一电压数据时，相对于第二电压数据，使得第一电压数据增大，甚至第一电压数据的值能够使得显示装置达到峰值亮度，从而相应的增大显示装置的对比度；该预设数据可以根据观看显示装置时的感受来确定，或者根据亮度的大小对应的对比度的大小来设定，使得预设值对第二电压数据进行补充，从而使得第一电压数据增大，从而使得显示装置的对比度增大，显示装置的亮度能够达峰值，从而使得显示装置的对比度较大提升。\n\n[0084]在一种实施例中，所述根据所述第二电压数据和预设数据设定第一电压数据的步骤包括：\n\n[0085]获取第二电压数据；\n\n[0086]根据所述第一数据设定预设数据；\n\n[0087]根据所述第二电压数据和预设数据设定第一电压数据。\n\n[0088]在一种实施例中，所述获取显示装置的亮度信息包括：\n\n[0089]获取显示装置的第一区域的第三发光面积；\n\n[0090]获取显示装置的待显示图像的第四发光面积；\n\n[0091]根据所述第三发光面积和所述第四发光面积得到显示装置的待显示图像的亮度信息；在对显示装置输入电压数据，从而调节亮度时，可以对显示装置的部分区域进行调节，例如，获取显示装置的某个区域的最大发光面积，即该区域能够发光的区域的面积，然后获取显示装置的待显示图像，统计该区域发光的部分的面积，从而根据该区域发光的部分的面积与最大发光面积得到显示装置的待显示图像的亮度信息，例如第一区域待显示图像的亮度信息，根据该亮度信息判断该区域是否满足峰值亮度条件，相应的在该区域满足峰值亮度条件时，向该区域提供第一电压数据，在该区域不满足峰值亮度条件时，向该区域提供第二电压数据，实现该区域的峰值亮度，提高该区域的对比度。\n\n[0092]在一种实施例中，所述获取显示装置的第一区域的第三发光面积的步骤包括：\n\n[0093]获取显示装置的第一区域的显示面积；\n\n[0094]获取显示装置的第一区域的不发光区域的面积；\n\n[0095]使用所述第一区域的显示面板减去所述第一区域的不发光区域的面积得到第三发光面积。\n\n[0096]如图2所示，本发明实施例提供一种显示装置亮度调节装置，该显示装置亮度调节装置包括：\n\n[0097]亮度信息获取模块11，用于获取显示装置14的待显示图像的亮度信息；\n\n[0098]判断模块12，用于根据显示装置14的待显示图像的亮度信息判断是否满足峰值亮度条件；\n\n[0099]数据输入模块13，用于在满足峰值亮度条件时，向显示装置14提供第一电压数据，在不满足峰值亮度条件时，向显示装置14提供第二电压数据，所述第一电压数据大于所述第二电压数据。\n\n[0100]本发明实施例提供一种显示装置亮度调节装置，该显示装置亮度调节装置包括亮度信息获取模块、判断模块、数据输入模块，所述亮度信息获取模块用于获取显示装置待显示图像的亮度信息；所述判断模块用于根据显示装置待显示图像的亮度信息判断显示装置是否满足峰值亮度条件；所述数据输入模块用于在满足峰值亮度条件时，向显示装置提供第一电压数据，在不满足峰值亮度条件时，向显示装置提供第二电压数据，所述第一电压数据大于所述第二电压数据；通过在向显示装置提供电压数据前，先判断显示装置是否满足峰值亮度条件，在满足峰值亮度条件时，向显示装置提供第一电压数据，在不满足峰值亮度条件时，向显示装置提供第二电压数据，从而使得在显示装置满足峰值亮度条件时，提供大于第二电压数据的第一电压数据，使得在显示装置发光时发光亮度提高，甚至达到峰值亮度，提高对比度，解决了现有miniLED显示屏存在亮度无法达到峰值，导致显示屏的对比度较差的技术问题。\n\n[0101]在一种实施例中，所述亮度信息获取模块包括：\n\n[0102]第一亮度信息获取模块，用于获取显示装置的第一发光面积；\n\n[0103]第二亮度信息获取模块，用于获取显示装置待显示图像的第二发光面积；\n\n[0104]第一亮度信息处理模块，用于根据所述第一发光面积和第二发光面积得到显示装置待显示图像的亮度信息。\n\n[0105]在一种实施例中，所述第一亮度信息获取模块包括：\n\n[0106]第一面积获取模块，用于获取显示装置的显示区的面积；\n\n[0107]第二面积获取模块，用于获取显示装置的显示区的不发光区域的面积；\n\n[0108]面积处理模块，用于使用所述显示区的面积减去所述显示区的不发光区域的面积得到第一发光面积。\n\n[0109]在一种实施例中，所述第二亮度信息获取模块包括：\n\n[0110]像素信息获取模块，用于确定待显示图像中像素的数量；\n\n[0111]像素面积模块，用于获取单个像素的面积；\n\n[0112]像素面积处理模块，用于根据待显示图像中像素的数量和所述单个像素的面积确定第二发光面积。\n\n[0113]在一种实施例中，所述第一亮度信息处理模块包括：\n\n[0114]第一处理模块，用于使用第二发光面积除以第一发光面积得到第一数据；\n\n[0115]第二处理模块，用于将所述第一数据作为显示装置待显示图像的亮度信息。\n\n[0116]在一种实施例中，所述判断模块包括：\n\n[0117]第一数据获取模块，用于获取第一数据作为显示装置待显示图像的亮度信息；\n\n[0118]设定模块，用于设定第二数据作为显示装置的亮度阶段的判断条件；\n\n[0119]比对模块，用于比对所述第一数据和第二数据；\n\n[0120]比对结果处理模块，用于根据所述第一数据与所述第二数据的比对结果判断是否满足峰值亮度条件。\n\n[0121]在一种实施例中，所述数据输入模块包括：\n\n[0122]第二电压数据设定模块，用于设定第二电压数据；\n\n[0123]第一电压数据设定模块，用于根据所述第二电压数据和预设数据设定第一电压数据。\n\n[0124]在一种实施例中，所述第一电压数据设定模块包括：\n\n[0125]第二电压数据获取模块，用于获取第二电压数据；\n\n[0126]预设数据设定模块，用于根据所述第一数据设定预设数据；\n\n[0127]第一电压数据确定模块，用于根据所述第二电压数据和预设数据设定第一电压数据。\n\n[0128]在一种实施例中，所述亮度信息获取模块包括：\n\n[0129]第三亮度信息获取模块，用于获取显示装置的第一区域的第三发光面积；\n\n[0130]第四亮度信息获取模块，用于获取显示装置的待显示图像的第四发光面积；\n\n[0131]第二亮度信息处理模块，用于根据所述第三发光面积和所述第四发光面积得到显示装置的待显示图像的亮度信息。\n\n[0132]在一种实施例中，所述第三亮度信息获取模块包括：\n\n[0133]第一区域显示面板获取模块，用于获取显示装置的第一区域的显示面积；\n\n[0134]第一区域不发光面积获取模块，用于获取显示装置的第一区域的不发光区域的面积；\n\n[0135]第一区域处理模块，用于使用所述第一区域的显示面板减去所述显示区的不发光区域的面积得到第三发光面积。\n\n[0136]如表一所示，现有技术的电压数据与亮度对比表如下，B2表示第一灰阶时亮度的大小，电压数据为以二进制输入的数据值，现有显示装置中，由于电压数据与亮度一一对应，在不同的灰阶中，电压数据线性变动，未考虑到实际需要的亮度，从而导致显示屏的亮度无法达到峰值，使得显示屏的对比度较差。\n\n[0137]\n\n[0138]\n\n[0139]表一\n\n[0140]如表二所示，本发明实施例提供的电压数据与亮度的对比表如下，B1表示第一灰阶时的亮度大小，电压数据为以二进制输入的数据值，从表中可以看到，对于64灰阶的显示装置，会存在64灰阶满足峰值条件的电压数据和64灰阶不满足峰值条件的电压数据，从表二中可以看出，在满足峰值亮度条件后，对于第一灰阶的电压数据增大，使得显示装置的亮度增大两倍，相应的从第二灰阶至第六十三灰阶的亮度增大，即相较于不满足峰值亮度条件时显示装置的亮度，满足峰值亮度条件的显示装置的亮度提升两倍左右，从而使得显示装置达到峰值亮度，提高对比度。\n\n[0141]\n\n[0142]表二\n\n[0143]需要说明的是，表一与表二中均未标出亮度为0的时候的灰阶。\n\n[0144]需要说明的是，表一和表二仅代表现有技术和本发明实施例中64灰阶的显示装置的亮度对比，但本发明实施例不限于此，对于其他灰阶例如256灰阶的显示装置也有相对应的电压数据输入，同时，满足峰值亮度条件的电压数据相较于不满足峰值亮度条件的电压数据不限于两倍，可以是其他倍数，例如3倍、1.5倍等，以实际能达到峰值亮度的电压数据决定。\n\n[0145]在一种场景中，亮度信息是否满足峰值亮度条件可如下表所示判断，如表三、表四所示，A1和A2表示该处电压数据，且A1、A2代表该处点亮，00代表该处不亮，设定峰值亮度条件为点亮的部分所占面积等于或者小于4％，则表三中点亮部分所占面积等于4％，满足峰值亮度条件，则可将A1更改为A2进行输入，其中A2大于A1，从而达到峰值亮度，提高对比度。\n\n[0146]000000000000A1000000000000000000000000000000000000\n\n[0147]表三\n\n[0148]000000000000A2000000000000000000000000000000000000\n\n[0149]表四\n\n[0150]根据以上实施例可知：\n\n[0151]本发明实施例提供一种显示装置亮度调节装置及方法，该显示装置亮度调节方法包括获取显示装置待显示图像的亮度信息；根据显示装置待显示图像的亮度信息判断是否满足峰值亮度条件；在满足峰值亮度条件时，向显示装置提供第一电压数据，在不满足峰值亮度条件时，向显示装置提供第二电压数据，其中，所述第一电压数据大于所述第二电压数据；通过在向显示装置提供电压数据前，先判断显示装置是否满足峰值亮度条件，在满足峰值亮度条件时，向显示装置提供第一电压数据，在不满足峰值亮度条件时，向显示装置提供第二电压数据，从而使得在显示装置满足峰值亮度条件时，提供大于第二电压数据的第一电压数据，使得在显示装置待显示图像发光时发光亮度提高，甚至达到峰值亮度，提高对比度，解决了现有miniLED显示屏存在亮度无法达到峰值，导致显示屏的对比度较差的技术问题。\n\n[0152]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10754, 23808, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种背光模组及显示面板。\n\n背景技术\n\n[0002]迷你发光二极管(Mini-LED)尺寸小，用于实现超薄多分区，是当前业者开发技术方向。\n\n[0003]目前，业界将Mini-LED作为背光源搭配液晶显示面板(Liquid Crystal Display，LCD)，实现超薄，高亮，多分区。随着分区数量的增加，分区的需求也增加。因而，有源矩阵驱动(Active Matrix，AM)方式被提出，通过采用玻璃基板成型的TFT结构搭配扫描的方式以实现有源矩阵驱动。当采用AM TFT设计结构时，因外界线路采用COF bonding方式实现，从而必然存在源极(source)侧相较于其他位置，LED离边距离更大，易出现拼接区域LED的间距(pitch)大于面内LED的pitch情况。\n\n[0004]如图1-2所示，背板1上设有许多小片的灯板，如第一灯板2、第二灯板3等，灯板上设有呈阵列排布的Mini-LED4。多片灯板拼接成大尺寸背光，两灯板拼接存在一拼接缝5，该拼接缝5无发光材料。当灯板发光时，由于拼接缝5无发光材料，容易导致拼接缝5区域的光线不均匀，影响显示面板的发光效果。\n\n[0005]继续参照图1，假设相邻第一灯板2和第二灯板3之间最近的Mini-LED 4的设计间距为L，灯板2和灯板3板内的Mini-LED 4间距(Pitch)为P。当L>P时，第一灯板2和第二灯板3之间凸显暗线7，该暗线7投影至扩散板6。特别是当第一灯板2和第二灯板3表面进行白漆处理后，而拼缝区域反射不足，更显示出暗线状态，影响光品味问题。\n\n发明内容\n\n[0006]本发明的目的在于，提供一背光模组及显示面板，以解决现有技术中mini LED灯板拼接位置产生暗线，拼接位置发光的色调和正常发光区域亮度不一致，影响背光模组中出光品质的技术问题。\n\n[0007]为实现上述目的，本发明提供一种背光模组，包括背板、灯板以及反射层；多个灯板，阵列拼接排布于所述背板上表面；所述拼接区设于相邻的两灯板之间，所述拼接区具有一拼接缝，所述拼接缝内设有补光材料；所述反射层设于所述灯板及所述拼接区上表面。\n\n[0008]进一步地，相邻的两块灯板分别为第一灯板和第二灯板；所述背光模组还包括:Mini-LED，呈阵列排布于每一灯板上表面，包括N列、M行，其中N与M皆为一正整数；第N列和/或第1列的Mini-LED相邻于其中一拼接区；反射片，设于第一灯板的第N列与第N-1列之间，和/或第二灯板的第1列与第2列之间。\n\n[0009]进一步地，相邻的两块灯板分别为第三灯板和第四灯板；所述背光模组还包括:Mini-LED，呈阵列排布于每一灯板上表面，包括N列、M行，其中N与M皆为一正整数；第M行和/或第1行的Mini-LED相邻于其中一拼接区；反射片，设于第三灯板的第M行与第M-1行之间，和/或第四灯板的第1行与第2行之间。\n\n[0010]进一步地，所述反射片上具有至少一通孔，贯穿所述反射片，用以透过部分光线；所述反射片还具有一反射面，朝向这一反射片所对应的所述拼接区。\n\n[0011]进一步地，所述通孔的孔径为一个Mini-LED的孔径的0.9-1.2倍。\n\n[0012]进一步地，所述反射片的表面与所述反射层的表面的夹角为65°-80°。\n\n[0013]进一步地，所述补光材料包括白色的聚碳酸酯和/或白色二氧化钛。\n\n[0014]进一步地，所述的背光模组，还包括：扩散板，与所述反射层相对设置。\n\n[0015]进一步地，所述反射片垂直于所述反射层的高度与所述扩散板与所述反射层之间的高度的比值范围为0.4-0.8。\n\n[0016]为实现上述目的，本发明还提供一种显示面板，包括前文所述的背光模组。\n\n[0017]本发明的技术效果在于，提供一种背光模组及显示面板，当拼接区的间距小于或等于一灯板上两个相邻的Mini-LED的间距时，在拼接缝填充补光材料，确保相邻两灯板的外观平整，并在灯板上设置一层反射层，从而拼接区的颜色和其他区域的颜色保持一致，提高了拼接位置上亮度，避免拼接区的位置上产生色差；在拼接缝最靠近的第一列/行的Mini-LED与第二列/行的Mini-LED之间设置发射片，使得Mini-LED射出的光线至反射片，反射片将光线反射拼接区位置，以使拼接位置发光的色调和正常区域一致，提高了拼接区的亮度，避免拼接区产生色差，从而提升背光模组发出光的品质。\n\n附图说明\n\n[0018]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0019]图1为现有灯板拼接结构侧视图。\n\n[0020]图2为现有灯板拼接结构俯视图。\n\n[0021]图3为实施例1所述灯板拼接结构侧视图。\n\n[0022]图4为实施例2所述灯板纵向拼接结构侧视图一。\n\n[0023]图5为实施例2所述灯板纵向拼接结构俯视图一。\n\n[0024]图6为实施例2所述灯板纵向拼接结构侧视图二。\n\n[0025]图7为实施例2所述灯板纵向拼接结构俯视图二。\n\n[0026]图8为实施例2所述反射片的放大图。\n\n[0027]图9为实施例3所述灯板横向拼接结构侧视图一。\n\n[0028]图10为实施例3所述灯板横向拼接结构俯视图一。\n\n[0029]图11为实施例3所述灯板横向拼接结构侧视图二。\n\n[0030]图12为实施例3所述灯板横向拼接结构俯视图二。\n\n[0031]图13为实施例4所述灯板纵向及横向拼接结构俯视图。\n\n[0032]附图部分标识如下：\n\n[0033]现有技术的部件标识：\n\n[0034]1背板；2第一灯板；3第二灯板；4Mini-LED；5拼接缝；6扩散板；7暗线。\n\n[0035]本申请的部件标识：\n\n[0036]10背板；20灯板；30反射层；40拼接区；50反射片；60扩散板；\n\n[0037]200Mini-LED；201第一灯板；202第二灯板；203第三灯板；\n\n[0038]401拼接缝；\n\n[0039]501通孔；502反射面；503第一反射片；504第二反射片；\n\n[0040]204第四灯板；205第五灯板；206第六灯板；\n\n[0041]207第七灯板；208第八灯板。\n\n具体实施方式\n\n[0042]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0043]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0044]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0045]实施例1\n\n[0046]如图3所示，本实施例提供一种背光模组，包括背板10、灯板20以及反射层30。\n\n[0047]多个灯板20阵列拼接排布于背板10上表面。Mini-LED200呈阵列排布于每一灯板20上表面。\n\n[0048]拼接区40设于相邻的第一灯板201与第二灯板202之间，拼接区40具有一拼接缝401，并在拼接缝401内填充补光材料。其中，所述补光材料包括白色的聚碳酸酯(Polycarbonate,PC)和/或白色二氧化钛(TiO2)。相邻第一灯板201与第二灯板202之间最近的Mini-LED200的间距为L(相当于拼接区40的宽度)，第一灯板201与第二灯板202内的Mini-LED200的间距(Pi tch)为P。当L＝P时，在拼接缝填充补光材料，确保相邻两灯板的外观平整，灯板间亮度过渡均匀，所述背光模组的亮度均匀。\n\n[0049]反射层30设于灯板20及拼接区40的上表面。反射层30用于反射Mini LED201的光线聚集在预设范围内出射，提升所述背光模组的亮度。\n\n[0050]扩散板60，与反射层30相对设置。在光照射到扩散板60上以后，它内部的光扩散剂就会发挥作用，使部分光线发生折射、反射及散射等。这样便可以确保透过的光线的纯度，也可以遮挡光源。\n\n[0051]本实施例提供一种背光模组，当拼接区的间距小于或等于一灯板上两个相邻的Mini-LED的间距时，在拼接缝填充补光材料，确保相邻两灯板的外观平整，并在灯板上设置一层反射层，从而拼接区的颜色和其他区域的颜色保持一致，提高了拼接位置上亮度，避免拼接区的位置上产生色差。\n\n[0052]本实施例还提供一种显示面板，包括前文所述的背光模组，由于背光模组的光照亮度均匀，该显示面板具有良好的显示效果。\n\n[0053]实施例2\n\n[0054]本实施例提供一种背光模组及显示面板，包括实施例1的大部分技术方案，其区别在于，L>P，所述背光模组还包括反射片。\n\n[0055]如图4-8所示，相邻的两块灯板20分别为第一灯板201和第二灯板202。\n\n[0056]Mini-LED200，呈阵列排布于每一灯板20上表面，包括N列、M行，其中N与M皆为一正整数。其中，第N列和/或第1列的Mini-LED200相邻于其中一拼接区40。\n\n[0057]如图4-5所示，反射片50可以设于第一灯板201的第N列与第N-1列之间，或者设于第二灯板202的第1列与第2列之间。\n\n[0058]如图6-7所示，反射片50也可以同时设于第一灯板201的第N列与第N-1列之间，以及设于第二灯板202的第1列与第2列之间。\n\n[0059]如图8所示，反射片50上具有至少一通孔501及一反射面502。\n\n[0060]通孔501贯穿反射片50，用以透过部分光线。通孔501的孔径为一个Mini-LED的孔径的0.9-1.2倍，参照图5或图7，一方面，以避免反射片50将作用于反射面502的光线全部被反射至拼接区40，导致拼接区40的亮度大于其他区域的亮度，从而产生亮度差，影响显示效果；另一方面，部分光线透过通孔501，以确保可以防止远离反射面502一侧的亮度均匀，不会产生暗线。\n\n[0061]本实施例中，反射面502朝向这一反射片50所对应的拼接区40，反射片50的表面与反射层30的表面的夹角为65°-80°，优选为68°、70°、72°、75°，使得反射片的俯视面覆盖第一列和/或第N列的Mini-LED，以确保Mini-LED200发出的光线直接作用于反射面502，并将该光线反射于拼接区40上。具体地，Mini-LED200发出的光线直接照射到反射片的一反射面502，该反射面502将光线反射到拼接区40，避免了拼接区40处有暗线产生，提升拼接区40的颜色和其他区域的颜色保持一致，提高了拼接位置上亮度，从而避免拼接区40的位置上产生色差。\n\n[0062]本实施例中，反射片50垂直于反射层30的高度与扩散板60与反射层30之间的高度的比值范围为0.4-0.8。优选地，反射片50垂直于反射层30的高度与扩散板60为反射层30之间的高度的三分之二，以确保Mini-LED200发出的光线作用于扩散板60，仅在背光模组内部会发挥作用，使部分光线发生折射、反射及散射，使得背光模组的任一处的亮度保持均匀，从而提升显示面板的显示效果。\n\n[0063]继续参照图6-7，在第一灯板201的第N列与第N-1列之间设置一反射片，以及在第二灯板202的第1列与第2列之间也设置一反射片，可以进一步地拼接区40处有暗线产生，提升拼接区40的颜色和其他区域的颜色保持一致，提高了拼接位置上亮度，从而避免拼接区40的位置上产生色差。\n\n[0064]本实施例提供一种背光模组，当所述反射片设于第一灯板的第N列与第N-1列之间，和/或第二灯板的第1列与第2列之间时，Mini-LED射出的光线至反射片，反射片将光线反射拼接区位置，以使拼接位置发光的色调和正常区域一致，提高了拼接区的亮度，避免拼接区产生色差，从而提升背光模组发出光的品质。\n\n[0065]本实施例还提供一种显示面板，包括前文所述的背光模组，由于背光模组的光照亮度均匀，该显示面板具有良好的显示效果。\n\n[0066]实施例3\n\n[0067]本实施例提供一种背光模组及显示面板，包括实施例2的大部分技术方案，其区别在于，实施例2的灯板是纵向拼接的，本实施的灯板是横向拼接的。\n\n[0068]如图9-12所示，相邻的两块灯板分别为第三灯板203和第四灯板204。Mini-LED200，呈阵列排布于每一灯板上表面，包括N列、M行，其中N与M皆为一正整数；第M行和/或第1行的Mini-LED相邻于其中一拼接区。\n\n[0069]如图9-10所示，反射片50，设于第三灯板203的第M行与第M-1行之间，或者第四灯板204的第1行与第2行之间。\n\n[0070]如图11-12所示，反射片50，设于第三灯板203的第M行与第M-1行之间，以及第四灯板204的第1行与第2行之间。在第三灯板203的第M行与第M-1行之间设置一反射片，以及在第四灯板204的第1行与第2行之间也设置一反射片，可以进一步地拼接区40处有暗线产生，提升拼接区40的颜色和其他区域的颜色保持一致，提高了拼接位置上亮度，从而避免拼接区40的位置上产生色差。\n\n[0071]本实施例提供一种背光模组，当所述反射片设于第但灯板的第M行与第M-1行之间，和/或第四灯板的第1行与第2行之间时，Mini-LED射出的光线至反射片，反射片将光线反射拼接区位置，以使拼接位置发光的色调和正常区域一致，提高了拼接区的亮度，避免拼接区产生色差，从而提升背光模组发出光的品质。\n\n[0072]本实施例还提供一种显示面板，包括前文所述的背光模组，由于背光模组的光照亮度均匀，该显示面板具有良好的显示效果。\n\n[0073]实施例4\n\n[0074]本实施例提供一种背光模组及显示面板，包括实施例2的全部技术方案，其区别在于，还包括纵向拼接的灯板以及横向拼接的灯板。\n\n[0075]如图13所示，所述背光模组包括四个阵列排布的灯板，分别为第五灯板205、第六灯板206、第七灯板207以及第八灯板208。第一拼接区401纵向贯穿四个灯板，第二拼接区401横向贯穿四个灯板，第一拼接区401与第二拼接区401相交延伸呈十字形。在第五灯板205的第M行与第M-1行之间与第七灯板207的第M行与第M-1行之间皆设有第一反射片503；在第七灯板207的第N列与第N-1列之间和第八灯板208的第N列与第N-1列之间皆设有第二反射片504。其中，第一反射片503与第二反射片504相交延伸呈十字形。\n\n[0076]本实施例提供一种背光模组，当所述反射片设于第一灯板的第N列/M行与第N-1列/M-1行之间，和/或第二灯板的第1列/行与第2列/行之间时，Mini-LED射出的光线至反射片，反射片将光线反射拼接区位置，以使拼接位置发光的色调和正常区域一致，提高了拼接区的亮度，避免拼接区产生色差，从而提升背光模组发出光的品质。\n\n[0077]本实施例还提供一种显示面板，包括前文所述的背光模组，由于背光模组的光照亮度均匀，该显示面板具有良好的显示效果。\n\n[0078]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0079]以上对本申请实施例所提供的一种背光模组及显示面板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种背光模组及显示面板。\n\n背景技术\n\n[0002]迷你发光二极管(Mini-LED)尺寸小，用于实现超薄多分区，是当前业者开发技术方向。\n\n[0003]目前，业界将Mini-LED作为背光源搭配液晶显示面板(Liquid Crystal Display，LCD)，实现超薄，高亮，多分区。随着分区数量的增加，分区的需求也增加。因而，有源矩阵驱动(Active Matrix，AM)方式被提出，通过采用玻璃基板成型的TFT结构搭配扫描的方式以实现有源矩阵驱动。当采用AM TFT设计结构时，因外界线路采用COF bonding方式实现，从而必然存在源极(source)侧相较于其他位置，LED离边距离更大，易出现拼接区域LED的间距(pitch)大于面内LED的pitch情况。\n\n[0004]如图1-2所示，背板1上设有许多小片的灯板，如第一灯板2、第二灯板3等，灯板上设有呈阵列排布的Mini-LED4。多片灯板拼接成大尺寸背光，两灯板拼接存在一拼接缝5，该拼接缝5无发光材料。当灯板发光时，由于拼接缝5无发光材料，容易导致拼接缝5区域的光线不均匀，影响显示面板的发光效果。\n\n[0005]继续参照图1，假设相邻第一灯板2和第二灯板3之间最近的Mini-LED 4的设计间距为L，灯板2和灯板3板内的Mini-LED 4间距(Pitch)为P。当L>P时，第一灯板2和第二灯板3之间凸显暗线7，该暗线7投影至扩散板6。特别是当第一灯板2和第二灯板3表面进行白漆处理后，而拼缝区域反射不足，更显示出暗线状态，影响光品味问题。\n\n发明内容\n\n[0006]本发明的目的在于，提供一背光模组及显示面板，以解决现有技术中mini LED灯板拼接位置产生暗线，拼接位置发光的色调和正常发光区域亮度不一致，影响背光模组中出光品质的技术问题。\n\n[0007]为实现上述目的，本发明提供一种背光模组，包括背板、灯板以及反射层；多个灯板，阵列拼接排布于所述背板上表面；所述拼接区设于相邻的两灯板之间，所述拼接区具有一拼接缝，所述拼接缝内设有补光材料；所述反射层设于所述灯板及所述拼接区上表面。\n\n[0008]进一步地，相邻的两块灯板分别为第一灯板和第二灯板；所述背光模组还包括:Mini-LED，呈阵列排布于每一灯板上表面，包括N列、M行，其中N与M皆为一正整数；第N列和/或第1列的Mini-LED相邻于其中一拼接区；反射片，设于第一灯板的第N列与第N-1列之间，和/或第二灯板的第1列与第2列之间。\n\n[0009]进一步地，相邻的两块灯板分别为第三灯板和第四灯板；所述背光模组还包括:Mini-LED，呈阵列排布于每一灯板上表面，包括N列、M行，其中N与M皆为一正整数；第M行和/或第1行的Mini-LED相邻于其中一拼接区；反射片，设于第三灯板的第M行与第M-1行之间，和/或第四灯板的第1行与第2行之间。\n\n[0010]进一步地，所述反射片上具有至少一通孔，贯穿所述反射片，用以透过部分光线；所述反射片还具有一反射面，朝向这一反射片所对应的所述拼接区。\n\n[0011]进一步地，所述通孔的孔径为一个Mini-LED的孔径的0.9-1.2倍。\n\n[0012]进一步地，所述反射片的表面与所述反射层的表面的夹角为65°-80°。\n\n[0013]进一步地，所述补光材料包括白色的聚碳酸酯和/或白色二氧化钛。\n\n[0014]进一步地，所述的背光模组，还包括：扩散板，与所述反射层相对设置。\n\n[0015]进一步地，所述反射片垂直于所述反射层的高度与所述扩散板与所述反射层之间的高度的比值范围为0.4-0.8。\n\n[0016]为实现上述目的，本发明还提供一种显示面板，包括前文所述的背光模组。\n\n[0017]本发明的技术效果在于，提供一种背光模组及显示面板，当拼接区的间距小于或等于一灯板上两个相邻的Mini-LED的间距时，在拼接缝填充补光材料，确保相邻两灯板的外观平整，并在灯板上设置一层反射层，从而拼接区的颜色和其他区域的颜色保持一致，提高了拼接位置上亮度，避免拼接区的位置上产生色差；在拼接缝最靠近的第一列/行的Mini-LED与第二列/行的Mini-LED之间设置发射片，使得Mini-LED射出的光线至反射片，反射片将光线反射拼接区位置，以使拼接位置发光的色调和正常区域一致，提高了拼接区的亮度，避免拼接区产生色差，从而提升背光模组发出光的品质。\n\n附图说明\n\n[0018]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0019]图1为现有灯板拼接结构侧视图。\n\n[0020]图2为现有灯板拼接结构俯视图。\n\n[0021]图3为实施例1所述灯板拼接结构侧视图。\n\n[0022]图4为实施例2所述灯板纵向拼接结构侧视图一。\n\n[0023]图5为实施例2所述灯板纵向拼接结构俯视图一。\n\n[0024]图6为实施例2所述灯板纵向拼接结构侧视图二。\n\n[0025]图7为实施例2所述灯板纵向拼接结构俯视图二。\n\n[0026]图8为实施例2所述反射片的放大图。\n\n[0027]图9为实施例3所述灯板横向拼接结构侧视图一。\n\n[0028]图10为实施例3所述灯板横向拼接结构俯视图一。\n\n[0029]图11为实施例3所述灯板横向拼接结构侧视图二。\n\n[0030]图12为实施例3所述灯板横向拼接结构俯视图二。\n\n[0031]图13为实施例4所述灯板纵向及横向拼接结构俯视图。\n\n[0032]附图部分标识如下：\n\n[0033]现有技术的部件标识：\n\n[0034]1背板；2第一灯板；3第二灯板；4Mini-LED；5拼接缝；6扩散板；7暗线。\n\n[0035]本申请的部件标识：\n\n[0036]10背板；20灯板；30反射层；40拼接区；50反射片；60扩散板；\n\n[0037]200Mini-LED；201第一灯板；202第二灯板；203第三灯板；\n\n[0038]401拼接缝；\n\n[0039]501通孔；502反射面；503第一反射片；504第二反射片；\n\n[0040]204第四灯板；205第五灯板；206第六灯板；\n\n[0041]207第七灯板；208第八灯板。\n\n具体实施方式\n\n[0042]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0043]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0044]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0045]实施例1\n\n[0046]如图3所示，本实施例提供一种背光模组，包括背板10、灯板20以及反射层30。\n\n[0047]多个灯板20阵列拼接排布于背板10上表面。Mini-LED200呈阵列排布于每一灯板20上表面。\n\n[0048]拼接区40设于相邻的第一灯板201与第二灯板202之间，拼接区40具有一拼接缝401，并在拼接缝401内填充补光材料。其中，所述补光材料包括白色的聚碳酸酯(Polycarbonate,PC)和/或白色二氧化钛(TiO2)。相邻第一灯板201与第二灯板202之间最近的Mini-LED200的间距为L(相当于拼接区40的宽度)，第一灯板201与第二灯板202内的Mini-LED200的间距(Pi tch)为P。当L＝P时，在拼接缝填充补光材料，确保相邻两灯板的外观平整，灯板间亮度过渡均匀，所述背光模组的亮度均匀。\n\n[0049]反射层30设于灯板20及拼接区40的上表面。反射层30用于反射Mini LED201的光线聚集在预设范围内出射，提升所述背光模组的亮度。\n\n[0050]扩散板60，与反射层30相对设置。在光照射到扩散板60上以后，它内部的光扩散剂就会发挥作用，使部分光线发生折射、反射及散射等。这样便可以确保透过的光线的纯度，也可以遮挡光源。\n\n[0051]本实施例提供一种背光模组，当拼接区的间距小于或等于一灯板上两个相邻的Mini-LED的间距时，在拼接缝填充补光材料，确保相邻两灯板的外观平整，并在灯板上设置一层反射层，从而拼接区的颜色和其他区域的颜色保持一致，提高了拼接位置上亮度，避免拼接区的位置上产生色差。\n\n[0052]本实施例还提供一种显示面板，包括前文所述的背光模组，由于背光模组的光照亮度均匀，该显示面板具有良好的显示效果。\n\n[0053]实施例2\n\n[0054]本实施例提供一种背光模组及显示面板，包括实施例1的大部分技术方案，其区别在于，L>P，所述背光模组还包括反射片。\n\n[0055]如图4-8所示，相邻的两块灯板20分别为第一灯板201和第二灯板202。\n\n[0056]Mini-LED200，呈阵列排布于每一灯板20上表面，包括N列、M行，其中N与M皆为一正整数。其中，第N列和/或第1列的Mini-LED200相邻于其中一拼接区40。\n\n[0057]如图4-5所示，反射片50可以设于第一灯板201的第N列与第N-1列之间，或者设于第二灯板202的第1列与第2列之间。\n\n[0058]如图6-7所示，反射片50也可以同时设于第一灯板201的第N列与第N-1列之间，以及设于第二灯板202的第1列与第2列之间。\n\n[0059]如图8所示，反射片50上具有至少一通孔501及一反射面502。\n\n[0060]通孔501贯穿反射片50，用以透过部分光线。通孔501的孔径为一个Mini-LED的孔径的0.9-1.2倍，参照图5或图7，一方面，以避免反射片50将作用于反射面502的光线全部被反射至拼接区40，导致拼接区40的亮度大于其他区域的亮度，从而产生亮度差，影响显示效果；另一方面，部分光线透过通孔501，以确保可以防止远离反射面502一侧的亮度均匀，不会产生暗线。\n\n[0061]本实施例中，反射面502朝向这一反射片50所对应的拼接区40，反射片50的表面与反射层30的表面的夹角为65°-80°，优选为68°、70°、72°、75°，使得反射片的俯视面覆盖第一列和/或第N列的Mini-LED，以确保Mini-LED200发出的光线直接作用于反射面502，并将该光线反射于拼接区40上。具体地，Mini-LED200发出的光线直接照射到反射片的一反射面502，该反射面502将光线反射到拼接区40，避免了拼接区40处有暗线产生，提升拼接区40的颜色和其他区域的颜色保持一致，提高了拼接位置上亮度，从而避免拼接区40的位置上产生色差。\n\n[0062]本实施例中，反射片50垂直于反射层30的高度与扩散板60与反射层30之间的高度的比值范围为0.4-0.8。优选地，反射片50垂直于反射层30的高度与扩散板60为反射层30之间的高度的三分之二，以确保Mini-LED200发出的光线作用于扩散板60，仅在背光模组内部会发挥作用，使部分光线发生折射、反射及散射，使得背光模组的任一处的亮度保持均匀，从而提升显示面板的显示效果。\n\n[0063]继续参照图6-7，在第一灯板201的第N列与第N-1列之间设置一反射片，以及在第二灯板202的第1列与第2列之间也设置一反射片，可以进一步地拼接区40处有暗线产生，提升拼接区40的颜色和其他区域的颜色保持一致，提高了拼接位置上亮度，从而避免拼接区40的位置上产生色差。\n\n[0064]本实施例提供一种背光模组，当所述反射片设于第一灯板的第N列与第N-1列之间，和/或第二灯板的第1列与第2列之间时，Mini-LED射出的光线至反射片，反射片将光线反射拼接区位置，以使拼接位置发光的色调和正常区域一致，提高了拼接区的亮度，避免拼接区产生色差，从而提升背光模组发出光的品质。\n\n[0065]本实施例还提供一种显示面板，包括前文所述的背光模组，由于背光模组的光照亮度均匀，该显示面板具有良好的显示效果。\n\n[0066]实施例3\n\n[0067]本实施例提供一种背光模组及显示面板，包括实施例2的大部分技术方案，其区别在于，实施例2的灯板是纵向拼接的，本实施的灯板是横向拼接的。\n\n[0068]如图9-12所示，相邻的两块灯板分别为第三灯板203和第四灯板204。Mini-LED200，呈阵列排布于每一灯板上表面，包括N列、M行，其中N与M皆为一正整数；第M行和/或第1行的Mini-LED相邻于其中一拼接区。\n\n[0069]如图9-10所示，反射片50，设于第三灯板203的第M行与第M-1行之间，或者第四灯板204的第1行与第2行之间。\n\n[0070]如图11-12所示，反射片50，设于第三灯板203的第M行与第M-1行之间，以及第四灯板204的第1行与第2行之间。在第三灯板203的第M行与第M-1行之间设置一反射片，以及在第四灯板204的第1行与第2行之间也设置一反射片，可以进一步地拼接区40处有暗线产生，提升拼接区40的颜色和其他区域的颜色保持一致，提高了拼接位置上亮度，从而避免拼接区40的位置上产生色差。\n\n[0071]本实施例提供一种背光模组，当所述反射片设于第但灯板的第M行与第M-1行之间，和/或第四灯板的第1行与第2行之间时，Mini-LED射出的光线至反射片，反射片将光线反射拼接区位置，以使拼接位置发光的色调和正常区域一致，提高了拼接区的亮度，避免拼接区产生色差，从而提升背光模组发出光的品质。\n\n[0072]本实施例还提供一种显示面板，包括前文所述的背光模组，由于背光模组的光照亮度均匀，该显示面板具有良好的显示效果。\n\n[0073]实施例4\n\n[0074]本实施例提供一种背光模组及显示面板，包括实施例2的全部技术方案，其区别在于，还包括纵向拼接的灯板以及横向拼接的灯板。\n\n[0075]如图13所示，所述背光模组包括四个阵列排布的灯板，分别为第五灯板205、第六灯板206、第七灯板207以及第八灯板208。第一拼接区401纵向贯穿四个灯板，第二拼接区401横向贯穿四个灯板，第一拼接区401与第二拼接区401相交延伸呈十字形。在第五灯板205的第M行与第M-1行之间与第七灯板207的第M行与第M-1行之间皆设有第一反射片503；在第七灯板207的第N列与第N-1列之间和第八灯板208的第N列与第N-1列之间皆设有第二反射片504。其中，第一反射片503与第二反射片504相交延伸呈十字形。\n\n[0076]本实施例提供一种背光模组，当所述反射片设于第一灯板的第N列/M行与第N-1列/M-1行之间，和/或第二灯板的第1列/行与第2列/行之间时，Mini-LED射出的光线至反射片，反射片将光线反射拼接区位置，以使拼接位置发光的色调和正常区域一致，提高了拼接区的亮度，避免拼接区产生色差，从而提升背光模组发出光的品质。\n\n[0077]本实施例还提供一种显示面板，包括前文所述的背光模组，由于背光模组的光照亮度均匀，该显示面板具有良好的显示效果。\n\n[0078]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0079]以上对本申请实施例所提供的一种背光模组及显示面板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10755, 23809, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种膜层加热装置及膜层固化方法。\n\n背景技术\n\n[0002]工业中经常涉及到溶液固化过程，由于液滴膜层外边温度比内部高，因而，边缘溶剂蒸发的比较快，溶质由内部流至外部，导致边缘膜厚与面内膜厚形成差异，导致膜层不均匀。\n\n[0003]因此，提供一种使得膜层固化时，能够使得膜层均匀的膜层加热装置。\n\n发明内容\n\n[0004]本申请实施例提供一种膜层加热装置及膜层固化方法，可以使得膜层固化时，能够使得膜层均匀。\n\n[0005]本申请提供一种膜层加热装置，包括：\n\n[0006]电路板，具有相对设置的第一面和第二面；\n\n[0007]光源部，所述光源部包括若干个，所述光源部呈矩阵设置在所述第一面；\n\n[0008]其中，每一个光源部可以单独控制，使得电路板上不同区域的光源部发光。\n\n[0009]在一些实施例中，所述光源部包括微型发光二极管和微型透镜，所述微型发光二极管设置在所述第一面，所述微型透镜罩设在所述微型发光二极管上。\n\n[0010]在一些实施例中，所述微型发光二极管的直径为8um至50um。\n\n[0011]在一些实施例中，所述微型发光二极管的热辐射功率可调节。\n\n[0012]在一些实施例中，所述微型透镜远离所述电路板的一侧为弧形。\n\n[0013]本申请实施例中还提供一种膜层固化方法，包括：\n\n[0014]获取膜层边缘的温度；\n\n[0015]根据所述膜层边缘的温度，分别控制膜层加热装置中各个区域的光源部发光，形成不同光型的固化；\n\n[0016]其中，所述膜层加热装置为以上所述的加热装置。\n\n[0017]在一些实施例中，所述获取膜层边缘的温度之后，包括：\n\n[0018]获取膜层的长度；\n\n[0019]基于膜层的长度和膜层边缘的温度形成膜层边缘的温度曲线。\n\n[0020]在一些实施例中，所述分别控制膜层加热装置中各个区域的光源部发光，包括：\n\n[0021]根据膜层边缘的温度曲线，分别控制膜层加热装置中各个区域的光源部发光。\n\n[0022]在一些实施例中，所述根据膜层边缘的温度曲线，分别控制膜层加热装置中各个区域的光源部发光，包括：\n\n[0023]根据膜层边缘的温度曲线进行分析，当膜层部分区域边缘温度较低时，控制膜层加热装置中对应区域的光源部发光。\n\n[0024]在一些实施例中，所述获取膜层边缘的温度，包括：\n\n[0025]通过温度传感器获取膜层边缘的温度在一些实施例中，所述封胶层位于所述通孔的孔壁与所述透光区域之间。\n\n[0026]本申请实施例所提供的膜层加热装置包括电路板和光源部。电路板具有相对设置的第一面和第二面，光源部所述光源部包括若干个，所述光源部呈矩阵设置在所述第一面，其中，每一个光源部可以单独控制，使得电路板上不同区域的光源部发光。本申请加热装置通过控制膜厚不均区的光源部发光，调控边缘溶液固化温度，达到固化膜层膜厚均匀的目的。\n\n附图说明\n\n[0027]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0028]图1为本申请实施例提供的膜层加热装置的结构示意图。\n\n[0029]图2为本申请实施例提供的膜层加热装置另一个的结构示意图。\n\n[0030]图3为本申请实施膜层固化方法的流程示意图。\n\n具体实施方式\n\n[0031]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0032]需要说明的是，在本申请的描述中，需要理解的是，术语“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。\n\n[0033]本申请实施例提供一种膜层加热装置及膜层固化方法，以下对膜层加热装置做详细介绍。\n\n[0034]请参阅图1至图2，图1为本申请实施例提供的膜层加热装置的结构示意图。图2为本申请实施例提供的膜层加热装置另一个的结构示意图。\n\n[0035]其中，本申请实施例提供的膜层加热装置100包括电路板10和光源部20。电路板10具有相对设置的第一面10a和第二面10b，光源部20所述光源部20包括若干个，所述光源部20呈矩阵设置在所述第一面10a，其中，每一个光源部20可以单独控制，使得电路板10上不同区域的光源部20发光。\n\n[0036]需要说明的是，第一面10a可以为电路板10的上表面，第一面10a可以为电路板10的下表面。当然，第一面10a也可以为电路板10的下表面，第一面10a可以为电路板10的上表面。本申请实施例中不做特殊说明的情况下，默认为第一面10a为电路板10的上表面，第二面10b为电路板10的下表面。\n\n[0037]其中，每一个光源部20都可以单独控制，因此可以使得电路板10上的不同区域可以单独控制光源部20的开或者关。从而调整电路板10不同区域的温度。\n\n[0038]其中，所述光源部20包括微型发光二极管21和微型透镜22，所述微型发光二极管21设置在所述第一面10a，所述微型透镜22罩设在所述微型发光二极管21上。通过微型发光二极管21发光，从而可以提供温度。同时，通过微型透镜22可以加强微型发光二极管21的温度辐射能力。\n\n[0039]其中，所述微型发光二极管21的直径为8um至50um。也就是，微型发光二极管21的直径为8um、10um、20um、30um以及50um。本申请实施例对微型发光二极管21的具体尺寸不做限定。当然因为微型发光二极管21的尺寸较小。因此，可以控制电路板10上温度的位置更加精确。\n\n[0040]其中，所述微型发光二极管21的热辐射功率可调节。这样能够使得更好的调节温度。\n\n[0041]其中，所述微型透镜22远离所述电路板10的一侧为弧形。当然，微型透镜22远离所述电路板10的一侧还可以为其他形状。比如，菱形。因为微型透镜22远离所述电路板10的一侧为弧形，因此，可以使得微型发光二极管21能够更加聚热。\n\n[0042]本申请实施例所提供的膜层加热装置100包括电路板10和光源部20。电路板10具有相对设置的第一面10a和第二面10b，光源部20所述光源部20包括若干个，所述光源部20呈矩阵设置在所述第一面10a，其中，每一个光源部20可以单独控制，使得电路板10上不同区域的光源部20发光。本申请加热装置通过控制膜厚不均区的光源部20发光，调控边缘溶液固化温度，达到固化膜层膜厚均匀的目的。\n\n[0043]请参阅图3，图3为本申请实施膜层固化方法的流程示意图。\n\n[0044]其中，本申请实施例提供的膜层固化方法，包括：\n\n[0045]201、获取膜层边缘的温度。\n\n[0046]其中，膜层边缘的温度为溶液固化过程中，溶液边缘的温度。\n\n[0047]在一些实施例中，“获取膜层边缘的温度”具体包括：\n\n[0048]通过温度传感器获取膜层边缘的温度。\n\n[0049]在一些实施例中，“获取膜层边缘的温度”之后具体包括：\n\n[0050](1)获取膜层的长度。\n\n[0051](2)基于膜层的长度和膜层边缘的温度形成膜层边缘的温度曲线。\n\n[0052]202、根据所述膜层边缘的温度，分别控制膜层加热装置中各个区域的光源部发光，形成不同光型的固化。\n\n[0053]需要说明的是，由于溶液固化过程中，由于温度不均，所以形成的膜层长度也不均匀，因此，在溶液固化形成膜层的过程中，通过分别控制膜层加热装置中各个区域的光源部发光，调控边缘溶液固化温度，形成不同光型的固化，达到固化膜层膜厚均匀的目的。\n\n[0054]在一些实施例中，“所述分别控制膜层加热装置中各个区域的光源部发光”具体包括：\n\n[0055]根据膜层边缘的温度曲线，分别控制膜层加热装置中各个区域的光源部发光。\n\n[0056]需要说明的是，膜层边缘的温度曲线表示了膜层端部之间长度关系和膜层边缘的温度的关系。根据膜层边缘的温度曲线表示了膜层端部之间长度关系和膜层边缘的温度的关系，可以确定控制膜层加热装置对需要加热的区域进行加热。\n\n[0057]在一些实施例中，“所述获取膜层边缘的温度”具体包括：\n\n[0058](1)根据膜层边缘的温度曲线进行分析，当膜层部分区域边缘温度较低时，控制膜层加热装置中对应区域的光源部发光。\n\n[0059]需要说明的是，当膜层部分区域边缘温度较低时，控制膜层加热装置中对应区域的光源部发光从而调控膜层边缘固化温度，形成不同光型的固化，达到固化膜层膜厚均匀的目的。\n\n[0060]其中，所述加热装置为以上所述的膜层加热装置。膜层加热装置以及在上述实施例做了详细介绍。本申请实施例中对，膜层加热装置不做过多赘述。\n\n[0061]本申请实施采用上述方法通过控制膜厚不均区光源部发光，调控边缘溶液固化温度，达到固化膜层膜厚均匀的目的。\n\n[0062]以上对本申请实施例提供的膜层加热装装置及膜层固化方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种膜层加热装置及膜层固化方法。\n\n背景技术\n\n[0002]工业中经常涉及到溶液固化过程，由于液滴膜层外边温度比内部高，因而，边缘溶剂蒸发的比较快，溶质由内部流至外部，导致边缘膜厚与面内膜厚形成差异，导致膜层不均匀。\n\n[0003]因此，提供一种使得膜层固化时，能够使得膜层均匀的膜层加热装置。\n\n发明内容\n\n[0004]本申请实施例提供一种膜层加热装置及膜层固化方法，可以使得膜层固化时，能够使得膜层均匀。\n\n[0005]本申请提供一种膜层加热装置，包括：\n\n[0006]电路板，具有相对设置的第一面和第二面；\n\n[0007]光源部，所述光源部包括若干个，所述光源部呈矩阵设置在所述第一面；\n\n[0008]其中，每一个光源部可以单独控制，使得电路板上不同区域的光源部发光。\n\n[0009]在一些实施例中，所述光源部包括微型发光二极管和微型透镜，所述微型发光二极管设置在所述第一面，所述微型透镜罩设在所述微型发光二极管上。\n\n[0010]在一些实施例中，所述微型发光二极管的直径为8um至50um。\n\n[0011]在一些实施例中，所述微型发光二极管的热辐射功率可调节。\n\n[0012]在一些实施例中，所述微型透镜远离所述电路板的一侧为弧形。\n\n[0013]本申请实施例中还提供一种膜层固化方法，包括：\n\n[0014]获取膜层边缘的温度；\n\n[0015]根据所述膜层边缘的温度，分别控制膜层加热装置中各个区域的光源部发光，形成不同光型的固化；\n\n[0016]其中，所述膜层加热装置为以上所述的加热装置。\n\n[0017]在一些实施例中，所述获取膜层边缘的温度之后，包括：\n\n[0018]获取膜层的长度；\n\n[0019]基于膜层的长度和膜层边缘的温度形成膜层边缘的温度曲线。\n\n[0020]在一些实施例中，所述分别控制膜层加热装置中各个区域的光源部发光，包括：\n\n[0021]根据膜层边缘的温度曲线，分别控制膜层加热装置中各个区域的光源部发光。\n\n[0022]在一些实施例中，所述根据膜层边缘的温度曲线，分别控制膜层加热装置中各个区域的光源部发光，包括：\n\n[0023]根据膜层边缘的温度曲线进行分析，当膜层部分区域边缘温度较低时，控制膜层加热装置中对应区域的光源部发光。\n\n[0024]在一些实施例中，所述获取膜层边缘的温度，包括：\n\n[0025]通过温度传感器获取膜层边缘的温度在一些实施例中，所述封胶层位于所述通孔的孔壁与所述透光区域之间。\n\n[0026]本申请实施例所提供的膜层加热装置包括电路板和光源部。电路板具有相对设置的第一面和第二面，光源部所述光源部包括若干个，所述光源部呈矩阵设置在所述第一面，其中，每一个光源部可以单独控制，使得电路板上不同区域的光源部发光。本申请加热装置通过控制膜厚不均区的光源部发光，调控边缘溶液固化温度，达到固化膜层膜厚均匀的目的。\n\n附图说明\n\n[0027]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0028]图1为本申请实施例提供的膜层加热装置的结构示意图。\n\n[0029]图2为本申请实施例提供的膜层加热装置另一个的结构示意图。\n\n[0030]图3为本申请实施膜层固化方法的流程示意图。\n\n具体实施方式\n\n[0031]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0032]需要说明的是，在本申请的描述中，需要理解的是，术语“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。\n\n[0033]本申请实施例提供一种膜层加热装置及膜层固化方法，以下对膜层加热装置做详细介绍。\n\n[0034]请参阅图1至图2，图1为本申请实施例提供的膜层加热装置的结构示意图。图2为本申请实施例提供的膜层加热装置另一个的结构示意图。\n\n[0035]其中，本申请实施例提供的膜层加热装置100包括电路板10和光源部20。电路板10具有相对设置的第一面10a和第二面10b，光源部20所述光源部20包括若干个，所述光源部20呈矩阵设置在所述第一面10a，其中，每一个光源部20可以单独控制，使得电路板10上不同区域的光源部20发光。\n\n[0036]需要说明的是，第一面10a可以为电路板10的上表面，第一面10a可以为电路板10的下表面。当然，第一面10a也可以为电路板10的下表面，第一面10a可以为电路板10的上表面。本申请实施例中不做特殊说明的情况下，默认为第一面10a为电路板10的上表面，第二面10b为电路板10的下表面。\n\n[0037]其中，每一个光源部20都可以单独控制，因此可以使得电路板10上的不同区域可以单独控制光源部20的开或者关。从而调整电路板10不同区域的温度。\n\n[0038]其中，所述光源部20包括微型发光二极管21和微型透镜22，所述微型发光二极管21设置在所述第一面10a，所述微型透镜22罩设在所述微型发光二极管21上。通过微型发光二极管21发光，从而可以提供温度。同时，通过微型透镜22可以加强微型发光二极管21的温度辐射能力。\n\n[0039]其中，所述微型发光二极管21的直径为8um至50um。也就是，微型发光二极管21的直径为8um、10um、20um、30um以及50um。本申请实施例对微型发光二极管21的具体尺寸不做限定。当然因为微型发光二极管21的尺寸较小。因此，可以控制电路板10上温度的位置更加精确。\n\n[0040]其中，所述微型发光二极管21的热辐射功率可调节。这样能够使得更好的调节温度。\n\n[0041]其中，所述微型透镜22远离所述电路板10的一侧为弧形。当然，微型透镜22远离所述电路板10的一侧还可以为其他形状。比如，菱形。因为微型透镜22远离所述电路板10的一侧为弧形，因此，可以使得微型发光二极管21能够更加聚热。\n\n[0042]本申请实施例所提供的膜层加热装置100包括电路板10和光源部20。电路板10具有相对设置的第一面10a和第二面10b，光源部20所述光源部20包括若干个，所述光源部20呈矩阵设置在所述第一面10a，其中，每一个光源部20可以单独控制，使得电路板10上不同区域的光源部20发光。本申请加热装置通过控制膜厚不均区的光源部20发光，调控边缘溶液固化温度，达到固化膜层膜厚均匀的目的。\n\n[0043]请参阅图3，图3为本申请实施膜层固化方法的流程示意图。\n\n[0044]其中，本申请实施例提供的膜层固化方法，包括：\n\n[0045]201、获取膜层边缘的温度。\n\n[0046]其中，膜层边缘的温度为溶液固化过程中，溶液边缘的温度。\n\n[0047]在一些实施例中，“获取膜层边缘的温度”具体包括：\n\n[0048]通过温度传感器获取膜层边缘的温度。\n\n[0049]在一些实施例中，“获取膜层边缘的温度”之后具体包括：\n\n[0050](1)获取膜层的长度。\n\n[0051](2)基于膜层的长度和膜层边缘的温度形成膜层边缘的温度曲线。\n\n[0052]202、根据所述膜层边缘的温度，分别控制膜层加热装置中各个区域的光源部发光，形成不同光型的固化。\n\n[0053]需要说明的是，由于溶液固化过程中，由于温度不均，所以形成的膜层长度也不均匀，因此，在溶液固化形成膜层的过程中，通过分别控制膜层加热装置中各个区域的光源部发光，调控边缘溶液固化温度，形成不同光型的固化，达到固化膜层膜厚均匀的目的。\n\n[0054]在一些实施例中，“所述分别控制膜层加热装置中各个区域的光源部发光”具体包括：\n\n[0055]根据膜层边缘的温度曲线，分别控制膜层加热装置中各个区域的光源部发光。\n\n[0056]需要说明的是，膜层边缘的温度曲线表示了膜层端部之间长度关系和膜层边缘的温度的关系。根据膜层边缘的温度曲线表示了膜层端部之间长度关系和膜层边缘的温度的关系，可以确定控制膜层加热装置对需要加热的区域进行加热。\n\n[0057]在一些实施例中，“所述获取膜层边缘的温度”具体包括：\n\n[0058](1)根据膜层边缘的温度曲线进行分析，当膜层部分区域边缘温度较低时，控制膜层加热装置中对应区域的光源部发光。\n\n[0059]需要说明的是，当膜层部分区域边缘温度较低时，控制膜层加热装置中对应区域的光源部发光从而调控膜层边缘固化温度，形成不同光型的固化，达到固化膜层膜厚均匀的目的。\n\n[0060]其中，所述加热装置为以上所述的膜层加热装置。膜层加热装置以及在上述实施例做了详细介绍。本申请实施例中对，膜层加热装置不做过多赘述。\n\n[0061]本申请实施采用上述方法通过控制膜厚不均区光源部发光，调控边缘溶液固化温度，达到固化膜层膜厚均匀的目的。\n\n[0062]以上对本申请实施例提供的膜层加热装装置及膜层固化方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10756, 23810, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种背光模组及具有该背光模组的显示装置。\n\n背景技术\n\n[0002]小型发光二极管(Mini Light Emitting Diode，Mini-LED)是将传统的LED尺寸小型化后得到的发光元器件，由于其相较于传统的LED来说尺寸更小，因此若将其应用于显示器中，则能够提高显示画面的分辨率。\n\n[0003]通常，将Mini-LED作为背光与液晶显示(Liquid Crystal Display，LCD)面板相结合以组成LCD显示器，为了提高显示画面的对比度，需要提高Mini-LED的发光亮度，现有技术中通常使用反射法提高Mini-LED的发光亮度，但该方法对Mini-LED的发光亮度的提升效果有限。\n\n发明内容\n\n[0004]因此，有必要提供一种能够极大提升发光层发光亮度的背光模组及具有该背光模组的显示装置。\n\n[0005]本申请实施例提供一种背光模组，包括：\n\n[0006]发光层和亮度增强层，所述亮度增强层设于所述发光层的表面；所述亮度增强层包括若干光学微腔，每个所述光学微腔用于使所述发光层射入自身的部分光产生谐振得到谐振光，并将所述谐振光射出。\n\n[0007]在一些实施例中，每个所述光学微腔为实心球形结构。\n\n[0008]在一些实施例中，每个所述光学微腔的折射率的取值范围为1.8-2.5。\n\n[0009]在一些实施例中，每个所述光学微腔的材料为钛酸钡、氧化钡、二氧化钛、二氧化硅和氧化锂中的任意一种或多种的组合。\n\n[0010]在一些实施例中，每个所述光学微腔的直径的取值范围为20-200μm。\n\n[0011]在一些实施例中，若干所述光学微腔呈单层阵列状均匀排布。\n\n[0012]在一些实施例中，每个所述光学微腔与剩余的至少两个所述光学微腔相切。\n\n[0013]在一些实施例中，所述发光层包括若干发出蓝光的小型发光二极管，所述发光层和所述亮度增强层之间还包括：\n\n[0014]支撑结构，所述支撑结构设于所述发光层的表面；\n\n[0015]扩散板，所述扩散板设于所述支撑结构的表面；\n\n[0016]量子点膜，所述量子点膜设于所述扩散板的表面；\n\n[0017]所述亮度增强层设于所述量子点膜的表面。\n\n[0018]在一些实施例中，所述背光模组还包括：\n\n[0019]扩散片，所述扩散片设于所述亮度增强层的表面；\n\n[0020]反射式偏光增亮膜，所述反射式偏光增亮膜设于所述扩散片的表面。\n\n[0021]本申请实施例还提供一种显示装置，包括：\n\n[0022]显示面板，以及如上述任一实施例所述的背光模组。\n\n[0023]本申请实施例提供的背光模组及具有该背光模组的显示装置，在背光模组中的发光层的表面设置亮度增强层，通过将亮度增强层设计为光学微腔的结构，基于光学微腔的WGM谐振效应和天线效应，使发光层射入至光学微腔内的部分光的强度极大地增强并射出，从而极大地提高了发光层的发光亮度。当该背光模组应用到显示装置内时，可以极大地提高显示装置的显示亮度。\n\n附图说明\n\n[0024]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0025]图1为本申请第一实施例提供的一种背光模组的结构示意图；\n\n[0026]图2为本申请第六实施例提供的一种背光模组的俯视图；\n\n[0027]图3为本申请第七实施例提供的一种背光模组的俯视图；\n\n[0028]图4为本申请第九实施例提供的一种背光模组的结构示意图；\n\n[0029]图5为本申请第十实施例提供的一种背光模组的结构示意图；\n\n[0030]图6为本申请第十一实施例提供的一种显示装置的结构示意图。\n\n具体实施方式\n\n[0031]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0032]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0033]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0034]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0035]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0036]图1为本申请第一实施例提供的一种背光模组的结构示意图，如图1所示，背光模组10包括：发光层110，以及设于发光层110的表面的亮度增强层120。\n\n[0037]其中，发光层110为具有发光功能的功能层，例如，发光层110可以为若干Mini-LED，可以为量子点(Quantum Dot，QD)发光膜或染料发光膜，还可以为有机发光二极管(Organic Light-Emitting Diode，OLED)或量子点发光二极管(Quantum Dot LightEmitting Diodes，QLED)中的发光器件，本申请实施例对此不作具体限定。\n\n[0038]亮度增强层120为具有亮度增强功能的功能层，在本申请实施例中，亮度增强层120包括若干光学微腔1201。其中，光学微腔1201是一种形貌依赖的光学谐振腔，其主要包括球形、柱形和环形等形貌。图1示出的光学微腔1201的形貌为球形。\n\n[0039]对于每个光学微腔1201来说，将从发光层110射入光学微腔1201内的光称为入射光，基于光学微腔1201的回音壁模式(Whispering Gallery Mode，WGM)谐振效应和天线效应，能够使入射光中特定波长的光的强度极大地增强，并沿特定方向从光学微腔1201内射出，为了便于描述，将这部分光称为谐振光。\n\n[0040]由于光的强度越强，其亮度也越高，因此谐振光相较于入射光来说亮度极大地提高，研究表明，谐振光的亮度相较于入射光的亮度，提高了2到3个数量级。\n\n[0041]本申请实施例提供的背光模组10，在发光层110的表面设置亮度增强层120，通过将亮度增强层120设计为光学微腔1201的结构，基于光学微腔1201的WGM谐振效应和天线效应，使发光层110射入至光学微腔1201内的部分光的强度极大地增强并射出，从而极大地提高了发光层110的发光亮度。\n\n[0042]基于上述任一实施例，在第二实施例中每个光学微腔1201为实心球形结构。\n\n[0043]基于上述任一实施例，在第三实施例中每个光学微腔1201的折射率的取值范围为1.8-2.5。\n\n[0044]具体的，为了使光学微腔1201射出的谐振光的亮度更高，需要提高光学微腔1201的品质因子，由于光学微腔1201的品质因子与自身的折射率和尺寸有关，且折射率在较高的情况下，品质因子才能较高，因此本申请实施例将每个光学微腔1201的折射率设定为1.8-2.5之间的任意一个数值。\n\n[0045]基于上述任一实施例，在第四实施例中每个光学微腔1201的材料为钛酸钡BaTiO3、氧化钡BaO、二氧化钛TiO2、二氧化硅SiO2和氧化锂Li2O中的任意一种或多种透明材料的组合。\n\n[0046]具体的，由于光学微腔1201具有较高的折射率(1.8-2.5之间)，因此需要选取高折射率的透明材料制作光学微腔1201。本申请实施例中每个光学微腔1201的材料可为BaTiO3、BaO、TiO2、SiO2和Li2O中的任意一种或多种的组合，当然还可为其他处于折射率取值范围(1.8-2.5)内的高折射率的透明材料，本申请实施例对此不作具体限定。\n\n[0047]基于上述任一实施例，在第五实施例中每个光学微腔1201的直径的取值范围为20-200μm。\n\n[0048]具体的，由于光学微腔1201的尺寸越大，则其弯曲损耗越小，品质因子越高，光学微腔1201射出的谐振光的亮度更高，因此本申请实施例将每个光学微腔1201的直径的取值范围设定为20-200μm。但考虑到光学微腔1201的制作工艺的复杂程度等因素，本申请实施例中每个光学微腔1201的直径的取值范围优选为40-60μm。\n\n[0049]基于上述任一实施例，图2为本申请第六实施例提供的一种背光模组的俯视图，如图2所示，背光模组10包括发光层110，以及设于发光层110的表面的亮度增强层120。亮度增强层120包括若干光学微腔1201，这若干光学微腔1201呈单层阵列状均匀排布。\n\n[0050]具体的，本申请实施例中的亮度增强层120包括20个光学微腔1201，这20个光学微腔1201大面积覆盖于亮度增强层120的表面，且以4行×5列的单层阵列方式均匀排布，其中，每行的5个光学微腔1201相互间隔设置，每列的4个光学微腔1201相互间隔设置。\n\n[0051]需要说明的是，由于发光层110的表面的光学微腔1201的排布越均匀，则发光层110发出的光能够得到更均匀的亮度提升，因此图2所示的亮度增强层120中若干光学微腔1201的排布方式能够使发光层110发出的光得到更均匀的亮度提升。\n\n[0052]基于上述任一实施例，图3为本申请第七实施例提供的一种背光模组的俯视图，如图3所示，背光模组10包括发光层110，以及设于发光层110的表面的亮度增强层120。亮度增强层120包括若干光学微腔1201，这若干光学微腔1201呈单层阵列状均匀排布，且每个光学微腔1201与剩余的至少两个光学微腔1201相切。\n\n[0053]具体的，本申请实施例中的亮度增强层120包括42个光学微腔1201，这42个光学微腔1201大面积覆盖于亮度增强层120的表面，且以6行×7列的单层阵列方式均匀排布，其中，对于每行来说，该行的7个光学微腔1201中每相邻的2个光学微腔1201相切，对于每列来说，该列的6个光学微腔1201中每相邻的2个光学微腔1201相切。\n\n[0054]需要说明的是，由于图3所示的亮度增强层120中若干光学微腔1201的排布方式相较于图2更加紧凑，因此覆盖于发光层110的表面的光学微腔1201的数量更多，相较于图2，图3中的发光层110发出的光能够得到更均匀的亮度提升。\n\n[0055]基于上述任一实施例，在第八实施例中对将亮度增强层120设于发光层110的表面过程进行说明：\n\n[0056]步骤1，提供若干光学微腔1201，将光学微腔1201喷涂至发光层110的表面，通过静电力和范德华力，光学微腔1201便附着到发光层110的表面。\n\n[0057]步骤2，使用低粘合度的粘合带压至发光层110的表面，少许时间后将粘合带剥离，从而去除未附着在发光层110的表面的光学微腔1201。\n\n[0058]步骤3，重复步骤1和步骤2，直至形成如图2或图3所示的亮度增强层120。\n\n[0059]基于上述任一实施例，图4为本申请第九实施例提供的一种背光模组的结构示意图，如图4所示，背光模组10包括发光层110，以及设于发光层110的表面的亮度增强层120，其中，发光层110包括若干发出蓝光的Mini-LED。在发光层110和亮度增强层120之间还包括：\n\n[0060]支撑结构130、扩散板140和量子点膜150。\n\n[0061]其中，支撑结构130设于发光层110的表面；扩散板140设于支撑结构130的表面，用于使发光层110发出的蓝光更加均匀；量子点膜150设于扩散板140的表面，经扩散板140扩散的蓝光能够更均匀地激发量子点膜150，使量子点膜150发出绿光和红光。\n\n[0062]亮度增强层120设于量子点膜150的表面。\n\n[0063]本申请实施例提供的背光模组10，由于其中的亮度增强层120的亮度增强倍率较高，因此可以适当降低量子点膜150中量子点的用量，从而节约背光模组10的制造成本。\n\n[0064]基于上述任一实施例，图5为本申请第十实施例提供的一种背光模组的结构示意图，如图5所示，背光模组10还包括：\n\n[0065]扩散片160和反射式偏光增亮膜170。\n\n[0066]其中，扩散片160设于亮度增强层120的表面。\n\n[0067]需要说明的是，由于亮度增强层120只能使发光层110发出的部分光的光强增强，因此，量子点膜150发出的红光和绿光的视角会较小，此时，在亮度增强层120的表面设置扩散片160，用以增大量子点膜150发出的红光和绿光的视角。\n\n[0068]反射式偏光增亮膜170设于扩散片160的表面，用于使非偏振的红光和非偏振的绿光分别转换为偏振的红光和偏振的绿光，进而提高背光的偏光片透过率。\n\n[0069]基于上述任一实施例，图6为本申请第十一实施例提供的一种显示装置的结构示意图，如图6所示，显示装置1包括：\n\n[0070]显示面板20，以及上述如任一实施例所述的背光模组10。\n\n[0071]其中，背光模组10包括：发光层110，发光层110包括若干发出蓝光的Mini-LED，设于发光层110的表面的支撑结构130，设于支撑结构130的表面的扩散板140，设于扩散板140的表面的量子点膜150，设于量子点膜150的表面的亮度增强层120，设于亮度增强层120的表面的扩散片160，设于扩散片160的表面的反射式偏光增亮膜170。显示面板20设于反射式偏光增亮膜170的表面。\n\n[0072]本申请实施例提供的显示装置1，在背光模组10中的发光层110的表面设置亮度增强层120，通过将亮度增强层120设计为光学微腔1201的结构，基于光学微腔1201的WGM谐振效应和天线效应，使发光层110射入至光学微腔1201内的部分光的强度极大地增强并射出，从而极大地提高了发光层110的发光亮度。当该背光模组10应用到显示装置1内时，可以极大地提高显示装置1的显示亮度。\n\n[0073]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0074]以上对本申请实施例进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种背光模组及具有该背光模组的显示装置。\n\n背景技术\n\n[0002]小型发光二极管(Mini Light Emitting Diode，Mini-LED)是将传统的LED尺寸小型化后得到的发光元器件，由于其相较于传统的LED来说尺寸更小，因此若将其应用于显示器中，则能够提高显示画面的分辨率。\n\n[0003]通常，将Mini-LED作为背光与液晶显示(Liquid Crystal Display，LCD)面板相结合以组成LCD显示器，为了提高显示画面的对比度，需要提高Mini-LED的发光亮度，现有技术中通常使用反射法提高Mini-LED的发光亮度，但该方法对Mini-LED的发光亮度的提升效果有限。\n\n发明内容\n\n[0004]因此，有必要提供一种能够极大提升发光层发光亮度的背光模组及具有该背光模组的显示装置。\n\n[0005]本申请实施例提供一种背光模组，包括：\n\n[0006]发光层和亮度增强层，所述亮度增强层设于所述发光层的表面；所述亮度增强层包括若干光学微腔，每个所述光学微腔用于使所述发光层射入自身的部分光产生谐振得到谐振光，并将所述谐振光射出。\n\n[0007]在一些实施例中，每个所述光学微腔为实心球形结构。\n\n[0008]在一些实施例中，每个所述光学微腔的折射率的取值范围为1.8-2.5。\n\n[0009]在一些实施例中，每个所述光学微腔的材料为钛酸钡、氧化钡、二氧化钛、二氧化硅和氧化锂中的任意一种或多种的组合。\n\n[0010]在一些实施例中，每个所述光学微腔的直径的取值范围为20-200μm。\n\n[0011]在一些实施例中，若干所述光学微腔呈单层阵列状均匀排布。\n\n[0012]在一些实施例中，每个所述光学微腔与剩余的至少两个所述光学微腔相切。\n\n[0013]在一些实施例中，所述发光层包括若干发出蓝光的小型发光二极管，所述发光层和所述亮度增强层之间还包括：\n\n[0014]支撑结构，所述支撑结构设于所述发光层的表面；\n\n[0015]扩散板，所述扩散板设于所述支撑结构的表面；\n\n[0016]量子点膜，所述量子点膜设于所述扩散板的表面；\n\n[0017]所述亮度增强层设于所述量子点膜的表面。\n\n[0018]在一些实施例中，所述背光模组还包括：\n\n[0019]扩散片，所述扩散片设于所述亮度增强层的表面；\n\n[0020]反射式偏光增亮膜，所述反射式偏光增亮膜设于所述扩散片的表面。\n\n[0021]本申请实施例还提供一种显示装置，包括：\n\n[0022]显示面板，以及如上述任一实施例所述的背光模组。\n\n[0023]本申请实施例提供的背光模组及具有该背光模组的显示装置，在背光模组中的发光层的表面设置亮度增强层，通过将亮度增强层设计为光学微腔的结构，基于光学微腔的WGM谐振效应和天线效应，使发光层射入至光学微腔内的部分光的强度极大地增强并射出，从而极大地提高了发光层的发光亮度。当该背光模组应用到显示装置内时，可以极大地提高显示装置的显示亮度。\n\n附图说明\n\n[0024]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0025]图1为本申请第一实施例提供的一种背光模组的结构示意图；\n\n[0026]图2为本申请第六实施例提供的一种背光模组的俯视图；\n\n[0027]图3为本申请第七实施例提供的一种背光模组的俯视图；\n\n[0028]图4为本申请第九实施例提供的一种背光模组的结构示意图；\n\n[0029]图5为本申请第十实施例提供的一种背光模组的结构示意图；\n\n[0030]图6为本申请第十一实施例提供的一种显示装置的结构示意图。\n\n具体实施方式\n\n[0031]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0032]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0033]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0034]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0035]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0036]图1为本申请第一实施例提供的一种背光模组的结构示意图，如图1所示，背光模组10包括：发光层110，以及设于发光层110的表面的亮度增强层120。\n\n[0037]其中，发光层110为具有发光功能的功能层，例如，发光层110可以为若干Mini-LED，可以为量子点(Quantum Dot，QD)发光膜或染料发光膜，还可以为有机发光二极管(Organic Light-Emitting Diode，OLED)或量子点发光二极管(Quantum Dot LightEmitting Diodes，QLED)中的发光器件，本申请实施例对此不作具体限定。\n\n[0038]亮度增强层120为具有亮度增强功能的功能层，在本申请实施例中，亮度增强层120包括若干光学微腔1201。其中，光学微腔1201是一种形貌依赖的光学谐振腔，其主要包括球形、柱形和环形等形貌。图1示出的光学微腔1201的形貌为球形。\n\n[0039]对于每个光学微腔1201来说，将从发光层110射入光学微腔1201内的光称为入射光，基于光学微腔1201的回音壁模式(Whispering Gallery Mode，WGM)谐振效应和天线效应，能够使入射光中特定波长的光的强度极大地增强，并沿特定方向从光学微腔1201内射出，为了便于描述，将这部分光称为谐振光。\n\n[0040]由于光的强度越强，其亮度也越高，因此谐振光相较于入射光来说亮度极大地提高，研究表明，谐振光的亮度相较于入射光的亮度，提高了2到3个数量级。\n\n[0041]本申请实施例提供的背光模组10，在发光层110的表面设置亮度增强层120，通过将亮度增强层120设计为光学微腔1201的结构，基于光学微腔1201的WGM谐振效应和天线效应，使发光层110射入至光学微腔1201内的部分光的强度极大地增强并射出，从而极大地提高了发光层110的发光亮度。\n\n[0042]基于上述任一实施例，在第二实施例中每个光学微腔1201为实心球形结构。\n\n[0043]基于上述任一实施例，在第三实施例中每个光学微腔1201的折射率的取值范围为1.8-2.5。\n\n[0044]具体的，为了使光学微腔1201射出的谐振光的亮度更高，需要提高光学微腔1201的品质因子，由于光学微腔1201的品质因子与自身的折射率和尺寸有关，且折射率在较高的情况下，品质因子才能较高，因此本申请实施例将每个光学微腔1201的折射率设定为1.8-2.5之间的任意一个数值。\n\n[0045]基于上述任一实施例，在第四实施例中每个光学微腔1201的材料为钛酸钡BaTiO3、氧化钡BaO、二氧化钛TiO2、二氧化硅SiO2和氧化锂Li2O中的任意一种或多种透明材料的组合。\n\n[0046]具体的，由于光学微腔1201具有较高的折射率(1.8-2.5之间)，因此需要选取高折射率的透明材料制作光学微腔1201。本申请实施例中每个光学微腔1201的材料可为BaTiO3、BaO、TiO2、SiO2和Li2O中的任意一种或多种的组合，当然还可为其他处于折射率取值范围(1.8-2.5)内的高折射率的透明材料，本申请实施例对此不作具体限定。\n\n[0047]基于上述任一实施例，在第五实施例中每个光学微腔1201的直径的取值范围为20-200μm。\n\n[0048]具体的，由于光学微腔1201的尺寸越大，则其弯曲损耗越小，品质因子越高，光学微腔1201射出的谐振光的亮度更高，因此本申请实施例将每个光学微腔1201的直径的取值范围设定为20-200μm。但考虑到光学微腔1201的制作工艺的复杂程度等因素，本申请实施例中每个光学微腔1201的直径的取值范围优选为40-60μm。\n\n[0049]基于上述任一实施例，图2为本申请第六实施例提供的一种背光模组的俯视图，如图2所示，背光模组10包括发光层110，以及设于发光层110的表面的亮度增强层120。亮度增强层120包括若干光学微腔1201，这若干光学微腔1201呈单层阵列状均匀排布。\n\n[0050]具体的，本申请实施例中的亮度增强层120包括20个光学微腔1201，这20个光学微腔1201大面积覆盖于亮度增强层120的表面，且以4行×5列的单层阵列方式均匀排布，其中，每行的5个光学微腔1201相互间隔设置，每列的4个光学微腔1201相互间隔设置。\n\n[0051]需要说明的是，由于发光层110的表面的光学微腔1201的排布越均匀，则发光层110发出的光能够得到更均匀的亮度提升，因此图2所示的亮度增强层120中若干光学微腔1201的排布方式能够使发光层110发出的光得到更均匀的亮度提升。\n\n[0052]基于上述任一实施例，图3为本申请第七实施例提供的一种背光模组的俯视图，如图3所示，背光模组10包括发光层110，以及设于发光层110的表面的亮度增强层120。亮度增强层120包括若干光学微腔1201，这若干光学微腔1201呈单层阵列状均匀排布，且每个光学微腔1201与剩余的至少两个光学微腔1201相切。\n\n[0053]具体的，本申请实施例中的亮度增强层120包括42个光学微腔1201，这42个光学微腔1201大面积覆盖于亮度增强层120的表面，且以6行×7列的单层阵列方式均匀排布，其中，对于每行来说，该行的7个光学微腔1201中每相邻的2个光学微腔1201相切，对于每列来说，该列的6个光学微腔1201中每相邻的2个光学微腔1201相切。\n\n[0054]需要说明的是，由于图3所示的亮度增强层120中若干光学微腔1201的排布方式相较于图2更加紧凑，因此覆盖于发光层110的表面的光学微腔1201的数量更多，相较于图2，图3中的发光层110发出的光能够得到更均匀的亮度提升。\n\n[0055]基于上述任一实施例，在第八实施例中对将亮度增强层120设于发光层110的表面过程进行说明：\n\n[0056]步骤1，提供若干光学微腔1201，将光学微腔1201喷涂至发光层110的表面，通过静电力和范德华力，光学微腔1201便附着到发光层110的表面。\n\n[0057]步骤2，使用低粘合度的粘合带压至发光层110的表面，少许时间后将粘合带剥离，从而去除未附着在发光层110的表面的光学微腔1201。\n\n[0058]步骤3，重复步骤1和步骤2，直至形成如图2或图3所示的亮度增强层120。\n\n[0059]基于上述任一实施例，图4为本申请第九实施例提供的一种背光模组的结构示意图，如图4所示，背光模组10包括发光层110，以及设于发光层110的表面的亮度增强层120，其中，发光层110包括若干发出蓝光的Mini-LED。在发光层110和亮度增强层120之间还包括：\n\n[0060]支撑结构130、扩散板140和量子点膜150。\n\n[0061]其中，支撑结构130设于发光层110的表面；扩散板140设于支撑结构130的表面，用于使发光层110发出的蓝光更加均匀；量子点膜150设于扩散板140的表面，经扩散板140扩散的蓝光能够更均匀地激发量子点膜150，使量子点膜150发出绿光和红光。\n\n[0062]亮度增强层120设于量子点膜150的表面。\n\n[0063]本申请实施例提供的背光模组10，由于其中的亮度增强层120的亮度增强倍率较高，因此可以适当降低量子点膜150中量子点的用量，从而节约背光模组10的制造成本。\n\n[0064]基于上述任一实施例，图5为本申请第十实施例提供的一种背光模组的结构示意图，如图5所示，背光模组10还包括：\n\n[0065]扩散片160和反射式偏光增亮膜170。\n\n[0066]其中，扩散片160设于亮度增强层120的表面。\n\n[0067]需要说明的是，由于亮度增强层120只能使发光层110发出的部分光的光强增强，因此，量子点膜150发出的红光和绿光的视角会较小，此时，在亮度增强层120的表面设置扩散片160，用以增大量子点膜150发出的红光和绿光的视角。\n\n[0068]反射式偏光增亮膜170设于扩散片160的表面，用于使非偏振的红光和非偏振的绿光分别转换为偏振的红光和偏振的绿光，进而提高背光的偏光片透过率。\n\n[0069]基于上述任一实施例，图6为本申请第十一实施例提供的一种显示装置的结构示意图，如图6所示，显示装置1包括：\n\n[0070]显示面板20，以及上述如任一实施例所述的背光模组10。\n\n[0071]其中，背光模组10包括：发光层110，发光层110包括若干发出蓝光的Mini-LED，设于发光层110的表面的支撑结构130，设于支撑结构130的表面的扩散板140，设于扩散板140的表面的量子点膜150，设于量子点膜150的表面的亮度增强层120，设于亮度增强层120的表面的扩散片160，设于扩散片160的表面的反射式偏光增亮膜170。显示面板20设于反射式偏光增亮膜170的表面。\n\n[0072]本申请实施例提供的显示装置1，在背光模组10中的发光层110的表面设置亮度增强层120，通过将亮度增强层120设计为光学微腔1201的结构，基于光学微腔1201的WGM谐振效应和天线效应，使发光层110射入至光学微腔1201内的部分光的强度极大地增强并射出，从而极大地提高了发光层110的发光亮度。当该背光模组10应用到显示装置1内时，可以极大地提高显示装置1的显示亮度。\n\n[0073]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0074]以上对本申请实施例进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10757, 23811, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种大尺寸的MiniLED发光的显示面板及显示装置。\n\n背景技术\n\n[0002]MiniLED目前广泛的应用在超大尺寸(>100英寸)的显示器中，所采用的主流技术是采用PCB板为基底的小间距LED技术。目前MiniLED显示屏的像素间间距在10mm到1mm之间。基于PCB基板的技术方案是将负责驱动的MOS管和LED灯封装在一起，再转移和固定在PCB基板上。这样的技术方案面临两个方面的问题：(1)MOS管和LED灯封装的尺寸较大，难以实现像素间距小于0.5mm的显示屏；(2)PCB板和MOS管的成本较高。目前各家厂商都在开发采用TFT基板驱动MiniLED的技术方案。与PCB板和MOS管的技术方案相比，采用TFT基板能够省去MOS管的器件成本。现有面板厂的TFT基板生产尺寸较大，相较于PCB板来说，单位面积的成本也较低。由于不需要将MOS管与LED灯封装在一起，器件的尺寸也可以缩小，在实现更小的像素间距方面也有优势。因此，采用TFT基板驱动MiniLED的拼接屏具有更大的优点。\n\n发明内容\n\n[0003]本发明的目的在于，提出一种显示面板及显示装置，可以引入GOA电路的同时不增加多余的成本。\n\n[0004]为了达到上述目的，一种显示面板，包括：第一基板；驱动层，设于所述第一基板的一面，所述驱动层中设有至少一个薄膜晶体管；MiniLed发光单元，设于所述驱动层上，所述薄膜晶体管连接所述MiniLed发光单元；GOA电路，设于所述第一基板的另一面，所述GOA电路连接所述薄膜晶体管。\n\n[0005]进一步地，还包括：第二基板，设于所述GOA电路与所述第一基板之间，所述第二基板通过一胶层与所述第一基板贴附。\n\n[0006]进一步地，所述薄膜晶体管为金属氧化物薄膜晶体管。\n\n[0007]进一步地，所述金属线包括第一金属线，设于所述第一基板的侧面；所述第一金属线的一端通过第二金属线连接所述薄膜晶体管，另一端通过第二金属线连接所述GOA电路。\n\n[0008]进一步地，所述第一金属线的材料为金属银。\n\n[0009]进一步地，所述第二金属线的材料为金属银、金属铜或金属铝。\n\n[0010]进一步地，所述第一基板为玻璃基板；所述第二基板为玻璃基板。\n\n[0011]进一步地，还包括：封装胶，设于所述驱动层以及所述MiniLed发光单元上。\n\n[0012]进一步地，所述胶层的材料包括贴合胶。\n\n[0013]本发明还提供一种显示装置，包括前文所述的显示面板。\n\n[0014]本发明的有益效果是：本发明提供的MiniLed显示面板，将驱动IC替换成GOA电路，减小了面板制程的成本。通过在基板一面的不同区域制备驱动层以及GOA电路，然后切割基板形成两块，最后将两块基板的背面进行贴合，并通过金属线连接GOA电路以及驱动层，由于只需在基板的一面制作驱动层与GOA电路，所以本发明显示面板不会增加额外的制作成本。\n\n附图说明\n\n[0015]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0016]图1为本发明一实施例提供的显示面板的结构示意图。\n\n[0017]图2为本发明另一实施例提供的显示面板的结构示意图。\n\n[0018]图3为制备另一实施例的显示面板步骤S101的结构示意图。\n\n[0019]图4为制备另一实施例的显示面板步骤S102～步骤S103的结构示意图。\n\n[0020]图5为制备另一实施例的显示面板切割后的结构示意图。\n\n[0021]图6为制备另一实施例的显示面板切割后的结构示意图。\n\n[0022]显示面板100；\n\n[0023]第一基板101、驱动层102、MiniLed发光单元103；\n\n[0024]GOA电路104；金属线105；第一金属线1051；\n\n[0025]第二金属线1052。\n\n具体实施方式\n\n[0026]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0027]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0028]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0029]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0030]下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0031]如图1所示，本发明一实施例提供一种显示面板100，包括：第一基板101、驱动层102、MiniLed发光单元103以及GOA电路104。\n\n[0032]所述第一基板101为玻璃基板。\n\n[0033]所述驱动层102设于所述第一基板101的一面(正面设置)，所述驱动层102中设有至少一个薄膜晶体管。\n\n[0034]所述MiniLed发光单元103设于所述驱动层102上。所述薄膜晶体管连接所述MiniLed发光单元103，用以驱动所述MiniLed发光单元103发光显示。\n\n[0035]所述MiniLed发光单元103包括红色发光单元、蓝色发光单元以及绿色发光单元，依次阵列分布。\n\n[0036]所述GOA电路104设于所述第一基板101的另一面(背面设置)，所述GOA电路104通过一金属线105连接所述薄膜晶体管，所述GOA电路104由外部时序控制器控制，驱动每一行的薄膜晶体管工作。\n\n[0037]所述薄膜晶体管为金属氧化物薄膜晶体管，包括IGZO。\n\n[0038]所述金属线105包括第一金属线1051，设于所述第一基板101的侧面。所述第一金属线1051的材料为金属银。\n\n[0039]所述第一金属线1051的一端通过第二金属线1052连接所述薄膜晶体管，另一端通过第二金属线1052连接所述GOA电路104。\n\n[0040]所述第二金属线1052的材料为金属银、金属铜或金属铝。\n\n[0041]所述显示面板100还包括封装胶，设于所述驱动层102以及所述MiniLed发光单元103上。所述封装胶的材料包括黑胶。\n\n[0042]本发明一实施例提供的MiniLed的显示面板100，将驱动IC替换成GOA电路104，减小了面板制程的成本。\n\n[0043]制备一实施例的显示面板100时候，具体包括一下步骤。\n\n[0044]S1、提供第一基板101。\n\n[0045]S2、在第一基板101的整面依次制备驱动层102、MiniLed发光单元103。\n\n[0046]S3、在第一基板101的背面制备GOA电路104，并将GOA电路104与所述驱动层102通过金属线105连接。\n\n[0047]所述金属线105包括第一金属线1051，设于所述第一基板101的侧面。所述第一金属线1051的材料为金属银。\n\n[0048]所述第一金属线1051的一端通过第二金属线1052连接所述薄膜晶体管，另一端通过第二金属线1052连接所述GOA电路104。\n\n[0049]如图2所示，本发明还提供另一实施例的显示面板100a，与一实施例不同之处在于，显示面板100a还包括：第二基板106a，设于所述GOA电路104a与所述第一基板101a之间，所述第二基板106a通过一胶层107a与所述第一基板101a贴附。\n\n[0050]所述第二基板106a为玻璃基板。所述胶层107a的材料包括贴合胶。\n\n[0051]为了制备另一实施例的显示面板100a，具体包括如下步骤。\n\n[0052]S101、如图3所示，提供一基板10a，所述基板包括第一基板区域110a以及第二基板区域120a(两个区域皆在基板的一面)。\n\n[0053]S102、在所述第一基板区域110a依次制备驱动层102a、MiniLed发光单元103a以及第二金属线1052a。\n\n[0054]S103、在所述第二基板区域120a制备GOA电路104a以及第二金属线1052a。\n\n[0055]S104、如图4所示，切割所述基板10a，将第一基板区域110a以及第二基板区域120a分割形成第一基板101a(如图5所示)以及第二基板106a(如图6所示)。\n\n[0056]S105、贴合所述第一基板101以及第二基板106a，将所述第一基板101远离所述驱动层102的一面与所述第二基板106a远离所述GOA电路104的一面相贴合，最后通过设于侧面的第一金属线1051连接GOA电路104与驱动层102。\n\n[0057]本发明另一实施例提供的显示面板100，相较于一实施例，通过在基板的一面不同的区域制备驱动层102以及GOA电路104，然后切割基板形成两块，最后将两块基板的背面进行贴合，并通过金属线连接GOA电路104以及驱动层102，该实施例不需要额外的成本，只需在基板的一面制作即可。\n\n[0058]本发明提供一种显示装置，包括一实施例100或另一实施例100a所述的显示面板。\n\n[0059]本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种大尺寸的MiniLED发光的显示面板及显示装置。\n\n背景技术\n\n[0002]MiniLED目前广泛的应用在超大尺寸(>100英寸)的显示器中，所采用的主流技术是采用PCB板为基底的小间距LED技术。目前MiniLED显示屏的像素间间距在10mm到1mm之间。基于PCB基板的技术方案是将负责驱动的MOS管和LED灯封装在一起，再转移和固定在PCB基板上。这样的技术方案面临两个方面的问题：(1)MOS管和LED灯封装的尺寸较大，难以实现像素间距小于0.5mm的显示屏；(2)PCB板和MOS管的成本较高。目前各家厂商都在开发采用TFT基板驱动MiniLED的技术方案。与PCB板和MOS管的技术方案相比，采用TFT基板能够省去MOS管的器件成本。现有面板厂的TFT基板生产尺寸较大，相较于PCB板来说，单位面积的成本也较低。由于不需要将MOS管与LED灯封装在一起，器件的尺寸也可以缩小，在实现更小的像素间距方面也有优势。因此，采用TFT基板驱动MiniLED的拼接屏具有更大的优点。\n\n发明内容\n\n[0003]本发明的目的在于，提出一种显示面板及显示装置，可以引入GOA电路的同时不增加多余的成本。\n\n[0004]为了达到上述目的，一种显示面板，包括：第一基板；驱动层，设于所述第一基板的一面，所述驱动层中设有至少一个薄膜晶体管；MiniLed发光单元，设于所述驱动层上，所述薄膜晶体管连接所述MiniLed发光单元；GOA电路，设于所述第一基板的另一面，所述GOA电路连接所述薄膜晶体管。\n\n[0005]进一步地，还包括：第二基板，设于所述GOA电路与所述第一基板之间，所述第二基板通过一胶层与所述第一基板贴附。\n\n[0006]进一步地，所述薄膜晶体管为金属氧化物薄膜晶体管。\n\n[0007]进一步地，所述金属线包括第一金属线，设于所述第一基板的侧面；所述第一金属线的一端通过第二金属线连接所述薄膜晶体管，另一端通过第二金属线连接所述GOA电路。\n\n[0008]进一步地，所述第一金属线的材料为金属银。\n\n[0009]进一步地，所述第二金属线的材料为金属银、金属铜或金属铝。\n\n[0010]进一步地，所述第一基板为玻璃基板；所述第二基板为玻璃基板。\n\n[0011]进一步地，还包括：封装胶，设于所述驱动层以及所述MiniLed发光单元上。\n\n[0012]进一步地，所述胶层的材料包括贴合胶。\n\n[0013]本发明还提供一种显示装置，包括前文所述的显示面板。\n\n[0014]本发明的有益效果是：本发明提供的MiniLed显示面板，将驱动IC替换成GOA电路，减小了面板制程的成本。通过在基板一面的不同区域制备驱动层以及GOA电路，然后切割基板形成两块，最后将两块基板的背面进行贴合，并通过金属线连接GOA电路以及驱动层，由于只需在基板的一面制作驱动层与GOA电路，所以本发明显示面板不会增加额外的制作成本。\n\n附图说明\n\n[0015]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0016]图1为本发明一实施例提供的显示面板的结构示意图。\n\n[0017]图2为本发明另一实施例提供的显示面板的结构示意图。\n\n[0018]图3为制备另一实施例的显示面板步骤S101的结构示意图。\n\n[0019]图4为制备另一实施例的显示面板步骤S102～步骤S103的结构示意图。\n\n[0020]图5为制备另一实施例的显示面板切割后的结构示意图。\n\n[0021]图6为制备另一实施例的显示面板切割后的结构示意图。\n\n[0022]显示面板100；\n\n[0023]第一基板101、驱动层102、MiniLed发光单元103；\n\n[0024]GOA电路104；金属线105；第一金属线1051；\n\n[0025]第二金属线1052。\n\n具体实施方式\n\n[0026]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0027]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0028]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0029]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0030]下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0031]如图1所示，本发明一实施例提供一种显示面板100，包括：第一基板101、驱动层102、MiniLed发光单元103以及GOA电路104。\n\n[0032]所述第一基板101为玻璃基板。\n\n[0033]所述驱动层102设于所述第一基板101的一面(正面设置)，所述驱动层102中设有至少一个薄膜晶体管。\n\n[0034]所述MiniLed发光单元103设于所述驱动层102上。所述薄膜晶体管连接所述MiniLed发光单元103，用以驱动所述MiniLed发光单元103发光显示。\n\n[0035]所述MiniLed发光单元103包括红色发光单元、蓝色发光单元以及绿色发光单元，依次阵列分布。\n\n[0036]所述GOA电路104设于所述第一基板101的另一面(背面设置)，所述GOA电路104通过一金属线105连接所述薄膜晶体管，所述GOA电路104由外部时序控制器控制，驱动每一行的薄膜晶体管工作。\n\n[0037]所述薄膜晶体管为金属氧化物薄膜晶体管，包括IGZO。\n\n[0038]所述金属线105包括第一金属线1051，设于所述第一基板101的侧面。所述第一金属线1051的材料为金属银。\n\n[0039]所述第一金属线1051的一端通过第二金属线1052连接所述薄膜晶体管，另一端通过第二金属线1052连接所述GOA电路104。\n\n[0040]所述第二金属线1052的材料为金属银、金属铜或金属铝。\n\n[0041]所述显示面板100还包括封装胶，设于所述驱动层102以及所述MiniLed发光单元103上。所述封装胶的材料包括黑胶。\n\n[0042]本发明一实施例提供的MiniLed的显示面板100，将驱动IC替换成GOA电路104，减小了面板制程的成本。\n\n[0043]制备一实施例的显示面板100时候，具体包括一下步骤。\n\n[0044]S1、提供第一基板101。\n\n[0045]S2、在第一基板101的整面依次制备驱动层102、MiniLed发光单元103。\n\n[0046]S3、在第一基板101的背面制备GOA电路104，并将GOA电路104与所述驱动层102通过金属线105连接。\n\n[0047]所述金属线105包括第一金属线1051，设于所述第一基板101的侧面。所述第一金属线1051的材料为金属银。\n\n[0048]所述第一金属线1051的一端通过第二金属线1052连接所述薄膜晶体管，另一端通过第二金属线1052连接所述GOA电路104。\n\n[0049]如图2所示，本发明还提供另一实施例的显示面板100a，与一实施例不同之处在于，显示面板100a还包括：第二基板106a，设于所述GOA电路104a与所述第一基板101a之间，所述第二基板106a通过一胶层107a与所述第一基板101a贴附。\n\n[0050]所述第二基板106a为玻璃基板。所述胶层107a的材料包括贴合胶。\n\n[0051]为了制备另一实施例的显示面板100a，具体包括如下步骤。\n\n[0052]S101、如图3所示，提供一基板10a，所述基板包括第一基板区域110a以及第二基板区域120a(两个区域皆在基板的一面)。\n\n[0053]S102、在所述第一基板区域110a依次制备驱动层102a、MiniLed发光单元103a以及第二金属线1052a。\n\n[0054]S103、在所述第二基板区域120a制备GOA电路104a以及第二金属线1052a。\n\n[0055]S104、如图4所示，切割所述基板10a，将第一基板区域110a以及第二基板区域120a分割形成第一基板101a(如图5所示)以及第二基板106a(如图6所示)。\n\n[0056]S105、贴合所述第一基板101以及第二基板106a，将所述第一基板101远离所述驱动层102的一面与所述第二基板106a远离所述GOA电路104的一面相贴合，最后通过设于侧面的第一金属线1051连接GOA电路104与驱动层102。\n\n[0057]本发明另一实施例提供的显示面板100，相较于一实施例，通过在基板的一面不同的区域制备驱动层102以及GOA电路104，然后切割基板形成两块，最后将两块基板的背面进行贴合，并通过金属线连接GOA电路104以及驱动层102，该实施例不需要额外的成本，只需在基板的一面制作即可。\n\n[0058]本发明提供一种显示装置，包括一实施例100或另一实施例100a所述的显示面板。\n\n[0059]本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10758, 23812, '技术领域\n\n[0001]本申请涉及面板制造技术领域，特别涉及一种微型显示面板、制程方法及拼接显示面板。\n\n背景技术\n\n[0002]微型发光二极管(Mini/Micro-Light Emitting Diode,Mini/Micro-LED)显示作为下一代显示技术，优秀的显示效果，色彩还原性强，宽视角，高刷新率，高对比度，高稳定性，低功耗，高灰度等优势，显现出比液晶显示(Liquid Crystal Display,LCD)和有机发光二极管(Organic Light Emitting Diode,OLED)显示更优异的性能。从长远来看，随着转移等关键技术的突破，微型发光二极管或将全面进入从小屏到大屏的各类显示领域。\n\n[0003]现有的顶发光的柔性微型发光二极管拼接技术方案，在该方案中，由于区向玻璃侧弯曲，而切割后的玻璃断面比较粗糙，可能出先尖刺等问题，从而在弯折过程中可能损坏绝缘层。\n\n[0004]因此，提供一种在弯折过程中不容易损坏绝缘层的微型显示面板成为本领域技术人员亟待解决的技术问题。\n\n发明内容\n\n[0005]本申请实施例提供一种微型显示面板、制程方法及拼接显示面板。可以防止在弯折过程中损坏绝缘层。\n\n[0006]本申请实施例提供一种微型显示面板，包括：\n\n[0007]玻璃基板，所述玻璃基板具有相对设置的第一面和第二面，以及相对设置的第一端和第二端；\n\n[0008]薄膜晶体管层，所述薄膜晶体管层设置在所述第一面，所述薄膜晶体管层靠近所述第一端的端部与所述第一端对齐；\n\n[0009]微型发光二极管层，所述微型发光二极管层部分设置在所述薄膜晶体管层远离所述玻璃基板的一面；\n\n[0010]第一垫片，所述第一垫片设置在所述薄膜晶体管层远离所述玻璃基板的一面，且靠近所述第一端的端部与所述第一端对齐，所述第一垫片与所述微型发光二极管层处于同一层；\n\n[0011]第二垫片，所述第二垫片设置在所述第一垫片上，所述第二垫片靠近所述第一端的端部与所述第一端对齐，另一端与封装层连接；\n\n[0012]其中，所述第一垫片和第二垫片固定连接。\n\n[0013]在一些实施例中，还包括连接部，所述连接部一端与所述第一垫片固定连接，另一端与所述第二垫片固定连接。\n\n[0014]在一些实施例中，所述第一垫片和第二垫片以及连接部均为金属材料，所述连接部一端与所述第一垫片焊接，另一端与所述第二垫片焊接。\n\n[0015]在一些实施例中，还包括集成电路模块，所述集成电路模块设置在所述绝缘层上。\n\n[0016]在一些实施例中，还包括印刷电路板，所述印刷电路板与所述封装层远离所述第二端的一端连接。\n\n[0017]本申请实施例还提供一种微型显示面板的制程方法，包括：\n\n[0018]提供一玻璃基板，所述玻璃基板具有相对设置的第一面和第二面，以及相对设置的第一端和第二端；\n\n[0019]在所述第一面设置薄膜晶体层，所述薄膜晶体管层靠近所述第一端的一端与所述第一端对齐；\n\n[0020]在所述薄膜晶体管层远离所述玻璃基板的一面部分设置微型发光二极管层；\n\n[0021]在所述薄膜晶体管层远离所述玻璃基板的一面设置第一垫片，且所述第一垫片与靠近所述第一端的一端与所述第一端对齐，所述微型发光二极管层处于同一层；\n\n[0022]所述第一垫片上设置有第二垫片，所述第二垫片靠近所述第一端的端部与所述第一端对齐，另一端与封装层连接；\n\n[0023]将第一垫片和第二垫片固定连接。\n\n[0024]在一些实施例中，所述在所述薄膜晶体管层远离所述绝缘层的一面部分设置微型发光二极管层之后，包括：\n\n[0025]在所述薄膜晶体管层远离所述玻璃基板的一面设置底片；\n\n[0026]将底片切割形成第一垫片和第二垫片。\n\n[0027]在一些实施例中，所述将第一垫片和第二垫片固定连接，包括：\n\n[0028]将第一垫片和第二垫片通过连接部固定连接。\n\n[0029]在一些实施例中，所述将第一垫片和第二垫片通过连接部固定连接，包括：\n\n[0030]将连接部一端与所述第一垫片焊接，另一端与所述第二垫片焊接。\n\n[0031]本申请实施例提供一种拼接显示面板，包括多个微型显示面板，多个所述微型显示面板紧密拼接，所述微型显示面板为以上所述的微型显示面板。\n\n[0032]本申请实施例中提供微型显示面板、制程方法及拼接显示面板，本申请实施例中微型显示面板包括玻璃基板、薄膜晶体管层、微型发光二极管层、第一垫片以及第二垫片，所述玻璃基板具有相对设置的第一面和第二面，以及相对设置的第一端和第二端，所述薄膜晶体管层设置在所述第一面，所述薄膜晶体管层靠近所述第一端的端部与所述第一端对齐，所述微型发光二极管层部分设置在所述薄膜晶体管层远离所述玻璃基板的一面，所述第一垫片设置在所述薄膜晶体管层远离所述玻璃基板的一面，且靠近所述第一端的端部与所述第一端对齐，所述第一垫片与所述微型发光二极管层处于同一层，所述第二垫片设置在所述第一垫片上，所述第二垫片靠近所述第一端的端部与所述第一端对齐，另一端与封装层连接，其中，所述第一垫片和第二垫片固定连接。采用本申请的结构无需使用侧面线路印刷的工艺，无需进行磨边，也无需进行双面制程的保护。大幅度降低了制程难度，减少了面板的生产步骤和周期，降低制程成本，更有效的提高玻璃的利用率。同时，微型显示面板与微型显示面在拼接过程中，由于边缘没有设置绝缘层，因此，在拼接过程中不会因为挤压绝缘层而损坏绝缘层。\n\n附图说明\n\n[0033]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。\n\n[0034]图1为本申请实施例提供的微型显示面板俯视图。\n\n[0035]图2为本申请实施例提供的微型显示面板中集成电路模块翻转后的俯视图。\n\n[0036]图3为图2在A-A方向提供的剖面示意图。\n\n[0037]图4为图1中的放大示意图。\n\n[0038]图5为本申请实施例提供的微型显示面板制程方法流程示意图。\n\n[0039]图6为本申请实施例提供的微型显示面板制程方法另一种流程示意图。\n\n[0040]图7为本申请实施例提供的微型显示面板制程方法另一种场景示意图。\n\n[0041]图8为本申请实施例提供的拼接显示面板结构示意图。\n\n具体实施方式\n\n[0042]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0043]本申请实施例中提供一种微型显示面板、制程方法及拼接显示面板。以下对本申请实施例的微型显示面板做详细介绍。\n\n[0044]请参阅图1至图3，图1为本申请实施例提供的微型显示面板俯视图。图2 为本申请实施例提供的微型显示面板中集成电路模块翻转后的俯视图。图3为图2在A-A方向提供的剖面示意图。其中，本申请实施例提供一种微型显示面板，微型显示面板包括玻璃基板10、薄膜晶体管层12、微型发光二极管层13、第一垫片14以及第二垫片15。所述玻璃基板10具有相对设置的第一面11a和第二面11b，以及相对设置的第一端11c和第二端11d，所述薄膜晶体管层12 设置在所述第一面11a，所述薄膜晶体管层12靠近所述第一端11c的端部与所述第一端11c对齐，所述微型发光二极管层13部分设置在所述薄膜晶体管层 12远离所述玻璃基板10的一面，所述第一垫片14设置在所述薄膜晶体管层12 远离所述玻璃基板10的一面，且靠近所述第一端11c的端部与所述第一端11c 对齐，所述第一垫片14与所述微型发光二极管层13处于同一层，所述第二垫片15设置在所述第一垫片14上，所述第二垫片15垫片靠近所述第一端11c 的端部与所述第一端11c对齐，另一端与封装层17连接，其中，所述第一垫片14和第二垫片15固定连接。\n\n[0045]需要说明的是，第一面11a可以为玻璃基板10的上表面，第二面11b可以为玻璃基板10的下表面。当然，第一面11a也可以为玻璃基的下表面，第二面 11b可以为玻璃基板10的上表面。本申请实施例中不做特殊说明的情况下，默认为第一面11a为玻璃基板10的上表面，第二面11b为玻璃基板10的下表面。第一端11c为玻璃基板10的右侧端部，第二端11d为玻璃基板10的左侧端部。当然，在一些实施例中，可以将第一端11c和第二端11d的方位互换。本申请实施例中不做特殊说明的情况下，默认为第一端11c为玻璃基板10的右侧端部，第二端11d为玻璃基板10的左侧端部。\n\n[0046]另外的，薄膜晶体管层12为作为微型显示面板的开关。微型显示面板上的每个液晶像素点都是由薄膜晶体管来驱动。\n\n[0047]另外的，微型发光二极管层13包括多个微型发光二极管，具体的，多个微型发光二极管可以呈阵列排布形成微型发光二极管层13。\n\n[0048]另外的，封装层17为覆晶薄膜。封装层17主要用于封装集成电路模块18。\n\n[0049]另外的，第一垫片14和第二垫片15可以通过焊接的方式固定连接，还可以通黏贴的方式进行固定连接，当然还可以采用其他连接件的方式进行固定连接。本申请实施例中对于第一垫片14和第二垫片15的过多方式不一一赘述。\n\n[0050]可以理解的是，由于玻璃基板10的两端边缘没有其他部件，而是通过第二垫片15直接与封装层17连接，然后第二垫片15和第一垫片14连接，使得微型显示面板与封装显示面板在拼接时，不会挤压边缘的其他部件。\n\n[0051]其中，微型显示面板还包括连接部16，所述连接部16一端与所述第一垫片14固定连接，另一端与所述第二垫片15固定连接。\n\n[0052]需要说明的是，连接部16可以与第一垫片14一体成型，或者连接部16 与第二垫片15一体成型。第一垫片14和第二垫片15通过连接部16连接，第二垫片15与封装层17连接，这样不需要使得通过绝缘层从玻璃基板10的边缘弯折后与封装层17连接。从而，进一步保护绝缘层不会被损坏。\n\n[0053]另外的，第一垫片14和第二垫片15平行设置，且第一垫片14和第二垫片 15之间具有间隙。\n\n[0054]请参阅图4，图4为图1中的放大示意图。其中，第一垫片14包括多个，多个第一垫片14连接在薄膜晶体管层12上，具体的，第一垫片14包括第一连接部141和第二连接部142，第一连接部141用于薄膜晶体管层12连接，第二连接部142用于和第二垫片15连接。其中，第一连接部141设置在微型发光二极管的周缘。\n\n[0055]其中，所述第一垫片14和第二垫片15以及连接部16均为金属材料，所述连接部16一端与所述第一垫片14焊接，另一端与所述第二垫片15焊接。通过这种方式，可以使得第一垫片14和第二垫片15连接更加牢固。且连接方式比较简单，生产成本较低。\n\n[0056]另外的，所述第一垫片14和第二垫片15以及连接部16均为金属材料为 Au/Sn，Au/In，Sn/Ag，Sn/In或SnPb，或Sn等。\n\n[0057]其中，微型显示面板还包括集成电路模块18，所述集成电路模块18设置在所述绝缘层上。\n\n[0058]其中，微型显示面板还包括印刷电路板19，所述印刷电路板19与所述封装层17远离所述第二端11d的一端连接。\n\n[0059]本申请实施例中微型显示面板包括玻璃基板10、薄膜晶体管层12、微型发光二极管层13、第一垫片14以及第二垫片15，所述玻璃基板10具有相对设置的第一面11a和第二面11b，以及相对设置的第一端11c和第二端11d，所述薄膜晶体管层12设置在所述第一面11a，所述薄膜晶体管层12靠近所述第一端 11c的端部与所述第一端11c对齐，所述微型发光二极管层13部分设置在所述薄膜晶体管层12远离所述玻璃基板10的一面，所述第一垫片14设置在所述薄膜晶体管层12远离所述玻璃基板10的一面，且靠近所述第一端11c的端部与所述第一端11c对齐，所述第一垫片14与所述微型发光二极管层13处于同一层，所述第二垫片15设置在所述第一垫片14上，所述第二垫片15靠近所述第一端11c的端部与所述第一端11c对齐，另一端与封装层17连接，其中，所述第一垫片14和第二垫片15固定连接。采用本申请的结构无需使用侧面线路印刷的工艺，无需进行磨边，也无需进行双面制程的保护。大幅度降低了制程难度，减少了面板的生产步骤和周期，降低制程成本，更有效的提高玻璃的利用率。同时，微型显示面板与微型显示面在拼接过程中，由于边缘没有设置绝缘层，因此，在拼接过程中不会因为挤压绝缘层而损坏绝缘层。\n\n[0060]请参阅图5，图5为本申请实施例提供的微型显示面板制程方法流程示意图。其中，本申请实施例提供的微型显示面板制程方法，包括如下步骤：\n\n[0061]201、提供一玻璃基板，所述玻璃基板具有相对设置的第一面和第二面，以及相对设置的第一端和第二端。\n\n[0062]需要说明的是，第一面可以为玻璃基板的上表面，第二面可以为玻璃基板的下表面。当然，第一面也可以为玻璃基的下表面，第二面可以为玻璃基板的上表面。本申请实施例中不做特殊说明的情况下，默认为第一面为玻璃基板的上表面，第二面为玻璃基板的下表面。第一端为玻璃基板的右侧端部，第二端为玻璃基板的左侧端部。当然，在一些实施例中，可以将第一端和第二端的方位互换。本申请实施例中不做特殊说明的情况下，默认为第一端为玻璃基板的右侧端部，第二端为玻璃基板的左侧端部。\n\n[0063]202、在所述第一面设置薄膜晶体层，所述薄膜晶体管层靠近所述第一端的一端与所述第一端对齐。\n\n[0064]需要说明的是，薄膜晶体管层为作为微型显示面板的开关。微型显示面板上的每个液晶像素点都是由薄膜晶体管来驱动。\n\n[0065]203、在所述薄膜晶体管层远离所述玻璃基板的一面部分设置微型发光二极管层。\n\n[0066]需要说明的是，微型发光二极管层包括多个微型发光二极管，具体的，多个微型发光二极管可以呈阵列排布形成微型发光二极管层。\n\n[0067]204、在所述薄膜晶体管层远离所述玻璃基板的一面设置第一垫片，且所述第一垫片与靠近所述第一端的一端与所述第一端对齐，所述微型发光二极管层处于同一层。\n\n[0068]需要说明的是，第一垫片和第二垫片采用金属材料。所述第一垫片和第二垫片金属材料为Au/Sn，Au/In，Sn/Ag，Sn/In或SnPb，或Sn等。\n\n[0069]205、所述第一垫片上设置有第二垫片，所述第二垫片靠近所述第一端的端部与所述第一端对齐，另一端与封装层连接。\n\n[0070]206、将第一垫片和第二垫片固定连接。\n\n[0071]需要说明的是，第一垫片和第二垫片可以通过焊接的方式固定连接，还可以通黏贴的方式进行固定连接，当然还可以采用其他连接件的方式进行固定连接。本申请实施例中对于第一垫片和第二垫片的过多方式不一一赘述。\n\n[0072]请参阅图6，图6为本申请实施例提供的微型显示面板制程方法另一种流程示意图。图7为本申请实施例提供的微型显示面板制程方法另一种场景示意图。其中，本申请实施例提供的微型显示面板制程方法，包括如下步骤：\n\n[0073]301、提供一玻璃基板，所述玻璃基板具有相对设置的第一面和第二面，以及相对设置的第一端和第二端。\n\n[0074]302、在所述第一面设置薄膜晶体层，所述薄膜晶体管层靠近所述第一端的一端与所述第一端对齐。\n\n[0075]303、在所述薄膜晶体管层远离所述玻璃基板的一面部分设置微型发光二极管层。\n\n[0076]304、在所述薄膜晶体管层远离所述玻璃基板的一面设置底片，将底片切割形成第一垫片和第二垫片。\n\n[0077]需要说明的是，处理通过激光将底片切割为第一垫片和第二垫片，还可以采用其他切除方式，比如，通过水刀进行切割。另外的，在切割过程中也可以将玻璃基板和薄膜晶体管一通切断。\n\n[0078]305、在所述薄膜晶体管层远离所述玻璃基板的一面设置第一垫片，且所述第一垫片与靠近所述第一端的一端与所述第一端对齐，所述微型发光二极管层处于同一层。\n\n[0079]306、所述第一垫片上设置有第二垫片，所述第二垫片靠近所述第一端的端部与所述第一端对齐，另一端与封装层连接。\n\n[0080]307、将连接部一端与所述第一垫片焊接，另一端与所述第二垫片焊接将第一垫片和第二垫片固定连接。\n\n[0081]本申请实施例由于采用上述方法，无需使用侧面线路印刷的工艺，无需进行磨边，也无需进行双面制程的保护。大幅度降低了制程难度，减少了面板的生产步骤和周期，降低制程成本，更有效的提高玻璃的利用率。同时，微型显示面板与微型显示面在拼接过程中，由于边缘没有设置绝缘层，因此，在拼接过程中不会因为挤压绝缘层而损坏绝缘层。\n\n[0082]请参阅图8，图8为本申请实施例提供的拼接显示面板结构示意图。其中，本申请实施例提供一种拼接显示面板100。其中，拼接显示面板100包括多个微型显示面板10，多个所述微型显示面板10紧密拼接，所述微型显示面板10 为以上实施例所述的微型显示面板10。由于以上实施例对微型显示面板10已经详细描述。因此，本申请实施例中对微型显示面板10不做过度赘述。\n\n[0083]以上对本申请实施例提供的一种微型显示面板、制程方法以及拼接显示面板进行了详细介绍。本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及面板制造技术领域，特别涉及一种微型显示面板、制程方法及拼接显示面板。\n\n背景技术\n\n[0002]微型发光二极管(Mini/Micro-Light Emitting Diode,Mini/Micro-LED)显示作为下一代显示技术，优秀的显示效果，色彩还原性强，宽视角，高刷新率，高对比度，高稳定性，低功耗，高灰度等优势，显现出比液晶显示(Liquid Crystal Display,LCD)和有机发光二极管(Organic Light Emitting Diode,OLED)显示更优异的性能。从长远来看，随着转移等关键技术的突破，微型发光二极管或将全面进入从小屏到大屏的各类显示领域。\n\n[0003]现有的顶发光的柔性微型发光二极管拼接技术方案，在该方案中，由于区向玻璃侧弯曲，而切割后的玻璃断面比较粗糙，可能出先尖刺等问题，从而在弯折过程中可能损坏绝缘层。\n\n[0004]因此，提供一种在弯折过程中不容易损坏绝缘层的微型显示面板成为本领域技术人员亟待解决的技术问题。\n\n发明内容\n\n[0005]本申请实施例提供一种微型显示面板、制程方法及拼接显示面板。可以防止在弯折过程中损坏绝缘层。\n\n[0006]本申请实施例提供一种微型显示面板，包括：\n\n[0007]玻璃基板，所述玻璃基板具有相对设置的第一面和第二面，以及相对设置的第一端和第二端；\n\n[0008]薄膜晶体管层，所述薄膜晶体管层设置在所述第一面，所述薄膜晶体管层靠近所述第一端的端部与所述第一端对齐；\n\n[0009]微型发光二极管层，所述微型发光二极管层部分设置在所述薄膜晶体管层远离所述玻璃基板的一面；\n\n[0010]第一垫片，所述第一垫片设置在所述薄膜晶体管层远离所述玻璃基板的一面，且靠近所述第一端的端部与所述第一端对齐，所述第一垫片与所述微型发光二极管层处于同一层；\n\n[0011]第二垫片，所述第二垫片设置在所述第一垫片上，所述第二垫片靠近所述第一端的端部与所述第一端对齐，另一端与封装层连接；\n\n[0012]其中，所述第一垫片和第二垫片固定连接。\n\n[0013]在一些实施例中，还包括连接部，所述连接部一端与所述第一垫片固定连接，另一端与所述第二垫片固定连接。\n\n[0014]在一些实施例中，所述第一垫片和第二垫片以及连接部均为金属材料，所述连接部一端与所述第一垫片焊接，另一端与所述第二垫片焊接。\n\n[0015]在一些实施例中，还包括集成电路模块，所述集成电路模块设置在所述绝缘层上。\n\n[0016]在一些实施例中，还包括印刷电路板，所述印刷电路板与所述封装层远离所述第二端的一端连接。\n\n[0017]本申请实施例还提供一种微型显示面板的制程方法，包括：\n\n[0018]提供一玻璃基板，所述玻璃基板具有相对设置的第一面和第二面，以及相对设置的第一端和第二端；\n\n[0019]在所述第一面设置薄膜晶体层，所述薄膜晶体管层靠近所述第一端的一端与所述第一端对齐；\n\n[0020]在所述薄膜晶体管层远离所述玻璃基板的一面部分设置微型发光二极管层；\n\n[0021]在所述薄膜晶体管层远离所述玻璃基板的一面设置第一垫片，且所述第一垫片与靠近所述第一端的一端与所述第一端对齐，所述微型发光二极管层处于同一层；\n\n[0022]所述第一垫片上设置有第二垫片，所述第二垫片靠近所述第一端的端部与所述第一端对齐，另一端与封装层连接；\n\n[0023]将第一垫片和第二垫片固定连接。\n\n[0024]在一些实施例中，所述在所述薄膜晶体管层远离所述绝缘层的一面部分设置微型发光二极管层之后，包括：\n\n[0025]在所述薄膜晶体管层远离所述玻璃基板的一面设置底片；\n\n[0026]将底片切割形成第一垫片和第二垫片。\n\n[0027]在一些实施例中，所述将第一垫片和第二垫片固定连接，包括：\n\n[0028]将第一垫片和第二垫片通过连接部固定连接。\n\n[0029]在一些实施例中，所述将第一垫片和第二垫片通过连接部固定连接，包括：\n\n[0030]将连接部一端与所述第一垫片焊接，另一端与所述第二垫片焊接。\n\n[0031]本申请实施例提供一种拼接显示面板，包括多个微型显示面板，多个所述微型显示面板紧密拼接，所述微型显示面板为以上所述的微型显示面板。\n\n[0032]本申请实施例中提供微型显示面板、制程方法及拼接显示面板，本申请实施例中微型显示面板包括玻璃基板、薄膜晶体管层、微型发光二极管层、第一垫片以及第二垫片，所述玻璃基板具有相对设置的第一面和第二面，以及相对设置的第一端和第二端，所述薄膜晶体管层设置在所述第一面，所述薄膜晶体管层靠近所述第一端的端部与所述第一端对齐，所述微型发光二极管层部分设置在所述薄膜晶体管层远离所述玻璃基板的一面，所述第一垫片设置在所述薄膜晶体管层远离所述玻璃基板的一面，且靠近所述第一端的端部与所述第一端对齐，所述第一垫片与所述微型发光二极管层处于同一层，所述第二垫片设置在所述第一垫片上，所述第二垫片靠近所述第一端的端部与所述第一端对齐，另一端与封装层连接，其中，所述第一垫片和第二垫片固定连接。采用本申请的结构无需使用侧面线路印刷的工艺，无需进行磨边，也无需进行双面制程的保护。大幅度降低了制程难度，减少了面板的生产步骤和周期，降低制程成本，更有效的提高玻璃的利用率。同时，微型显示面板与微型显示面在拼接过程中，由于边缘没有设置绝缘层，因此，在拼接过程中不会因为挤压绝缘层而损坏绝缘层。\n\n附图说明\n\n[0033]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。\n\n[0034]图1为本申请实施例提供的微型显示面板俯视图。\n\n[0035]图2为本申请实施例提供的微型显示面板中集成电路模块翻转后的俯视图。\n\n[0036]图3为图2在A-A方向提供的剖面示意图。\n\n[0037]图4为图1中的放大示意图。\n\n[0038]图5为本申请实施例提供的微型显示面板制程方法流程示意图。\n\n[0039]图6为本申请实施例提供的微型显示面板制程方法另一种流程示意图。\n\n[0040]图7为本申请实施例提供的微型显示面板制程方法另一种场景示意图。\n\n[0041]图8为本申请实施例提供的拼接显示面板结构示意图。\n\n具体实施方式\n\n[0042]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0043]本申请实施例中提供一种微型显示面板、制程方法及拼接显示面板。以下对本申请实施例的微型显示面板做详细介绍。\n\n[0044]请参阅图1至图3，图1为本申请实施例提供的微型显示面板俯视图。图2 为本申请实施例提供的微型显示面板中集成电路模块翻转后的俯视图。图3为图2在A-A方向提供的剖面示意图。其中，本申请实施例提供一种微型显示面板，微型显示面板包括玻璃基板10、薄膜晶体管层12、微型发光二极管层13、第一垫片14以及第二垫片15。所述玻璃基板10具有相对设置的第一面11a和第二面11b，以及相对设置的第一端11c和第二端11d，所述薄膜晶体管层12 设置在所述第一面11a，所述薄膜晶体管层12靠近所述第一端11c的端部与所述第一端11c对齐，所述微型发光二极管层13部分设置在所述薄膜晶体管层 12远离所述玻璃基板10的一面，所述第一垫片14设置在所述薄膜晶体管层12 远离所述玻璃基板10的一面，且靠近所述第一端11c的端部与所述第一端11c 对齐，所述第一垫片14与所述微型发光二极管层13处于同一层，所述第二垫片15设置在所述第一垫片14上，所述第二垫片15垫片靠近所述第一端11c 的端部与所述第一端11c对齐，另一端与封装层17连接，其中，所述第一垫片14和第二垫片15固定连接。\n\n[0045]需要说明的是，第一面11a可以为玻璃基板10的上表面，第二面11b可以为玻璃基板10的下表面。当然，第一面11a也可以为玻璃基的下表面，第二面 11b可以为玻璃基板10的上表面。本申请实施例中不做特殊说明的情况下，默认为第一面11a为玻璃基板10的上表面，第二面11b为玻璃基板10的下表面。第一端11c为玻璃基板10的右侧端部，第二端11d为玻璃基板10的左侧端部。当然，在一些实施例中，可以将第一端11c和第二端11d的方位互换。本申请实施例中不做特殊说明的情况下，默认为第一端11c为玻璃基板10的右侧端部，第二端11d为玻璃基板10的左侧端部。\n\n[0046]另外的，薄膜晶体管层12为作为微型显示面板的开关。微型显示面板上的每个液晶像素点都是由薄膜晶体管来驱动。\n\n[0047]另外的，微型发光二极管层13包括多个微型发光二极管，具体的，多个微型发光二极管可以呈阵列排布形成微型发光二极管层13。\n\n[0048]另外的，封装层17为覆晶薄膜。封装层17主要用于封装集成电路模块18。\n\n[0049]另外的，第一垫片14和第二垫片15可以通过焊接的方式固定连接，还可以通黏贴的方式进行固定连接，当然还可以采用其他连接件的方式进行固定连接。本申请实施例中对于第一垫片14和第二垫片15的过多方式不一一赘述。\n\n[0050]可以理解的是，由于玻璃基板10的两端边缘没有其他部件，而是通过第二垫片15直接与封装层17连接，然后第二垫片15和第一垫片14连接，使得微型显示面板与封装显示面板在拼接时，不会挤压边缘的其他部件。\n\n[0051]其中，微型显示面板还包括连接部16，所述连接部16一端与所述第一垫片14固定连接，另一端与所述第二垫片15固定连接。\n\n[0052]需要说明的是，连接部16可以与第一垫片14一体成型，或者连接部16 与第二垫片15一体成型。第一垫片14和第二垫片15通过连接部16连接，第二垫片15与封装层17连接，这样不需要使得通过绝缘层从玻璃基板10的边缘弯折后与封装层17连接。从而，进一步保护绝缘层不会被损坏。\n\n[0053]另外的，第一垫片14和第二垫片15平行设置，且第一垫片14和第二垫片 15之间具有间隙。\n\n[0054]请参阅图4，图4为图1中的放大示意图。其中，第一垫片14包括多个，多个第一垫片14连接在薄膜晶体管层12上，具体的，第一垫片14包括第一连接部141和第二连接部142，第一连接部141用于薄膜晶体管层12连接，第二连接部142用于和第二垫片15连接。其中，第一连接部141设置在微型发光二极管的周缘。\n\n[0055]其中，所述第一垫片14和第二垫片15以及连接部16均为金属材料，所述连接部16一端与所述第一垫片14焊接，另一端与所述第二垫片15焊接。通过这种方式，可以使得第一垫片14和第二垫片15连接更加牢固。且连接方式比较简单，生产成本较低。\n\n[0056]另外的，所述第一垫片14和第二垫片15以及连接部16均为金属材料为 Au/Sn，Au/In，Sn/Ag，Sn/In或SnPb，或Sn等。\n\n[0057]其中，微型显示面板还包括集成电路模块18，所述集成电路模块18设置在所述绝缘层上。\n\n[0058]其中，微型显示面板还包括印刷电路板19，所述印刷电路板19与所述封装层17远离所述第二端11d的一端连接。\n\n[0059]本申请实施例中微型显示面板包括玻璃基板10、薄膜晶体管层12、微型发光二极管层13、第一垫片14以及第二垫片15，所述玻璃基板10具有相对设置的第一面11a和第二面11b，以及相对设置的第一端11c和第二端11d，所述薄膜晶体管层12设置在所述第一面11a，所述薄膜晶体管层12靠近所述第一端 11c的端部与所述第一端11c对齐，所述微型发光二极管层13部分设置在所述薄膜晶体管层12远离所述玻璃基板10的一面，所述第一垫片14设置在所述薄膜晶体管层12远离所述玻璃基板10的一面，且靠近所述第一端11c的端部与所述第一端11c对齐，所述第一垫片14与所述微型发光二极管层13处于同一层，所述第二垫片15设置在所述第一垫片14上，所述第二垫片15靠近所述第一端11c的端部与所述第一端11c对齐，另一端与封装层17连接，其中，所述第一垫片14和第二垫片15固定连接。采用本申请的结构无需使用侧面线路印刷的工艺，无需进行磨边，也无需进行双面制程的保护。大幅度降低了制程难度，减少了面板的生产步骤和周期，降低制程成本，更有效的提高玻璃的利用率。同时，微型显示面板与微型显示面在拼接过程中，由于边缘没有设置绝缘层，因此，在拼接过程中不会因为挤压绝缘层而损坏绝缘层。\n\n[0060]请参阅图5，图5为本申请实施例提供的微型显示面板制程方法流程示意图。其中，本申请实施例提供的微型显示面板制程方法，包括如下步骤：\n\n[0061]201、提供一玻璃基板，所述玻璃基板具有相对设置的第一面和第二面，以及相对设置的第一端和第二端。\n\n[0062]需要说明的是，第一面可以为玻璃基板的上表面，第二面可以为玻璃基板的下表面。当然，第一面也可以为玻璃基的下表面，第二面可以为玻璃基板的上表面。本申请实施例中不做特殊说明的情况下，默认为第一面为玻璃基板的上表面，第二面为玻璃基板的下表面。第一端为玻璃基板的右侧端部，第二端为玻璃基板的左侧端部。当然，在一些实施例中，可以将第一端和第二端的方位互换。本申请实施例中不做特殊说明的情况下，默认为第一端为玻璃基板的右侧端部，第二端为玻璃基板的左侧端部。\n\n[0063]202、在所述第一面设置薄膜晶体层，所述薄膜晶体管层靠近所述第一端的一端与所述第一端对齐。\n\n[0064]需要说明的是，薄膜晶体管层为作为微型显示面板的开关。微型显示面板上的每个液晶像素点都是由薄膜晶体管来驱动。\n\n[0065]203、在所述薄膜晶体管层远离所述玻璃基板的一面部分设置微型发光二极管层。\n\n[0066]需要说明的是，微型发光二极管层包括多个微型发光二极管，具体的，多个微型发光二极管可以呈阵列排布形成微型发光二极管层。\n\n[0067]204、在所述薄膜晶体管层远离所述玻璃基板的一面设置第一垫片，且所述第一垫片与靠近所述第一端的一端与所述第一端对齐，所述微型发光二极管层处于同一层。\n\n[0068]需要说明的是，第一垫片和第二垫片采用金属材料。所述第一垫片和第二垫片金属材料为Au/Sn，Au/In，Sn/Ag，Sn/In或SnPb，或Sn等。\n\n[0069]205、所述第一垫片上设置有第二垫片，所述第二垫片靠近所述第一端的端部与所述第一端对齐，另一端与封装层连接。\n\n[0070]206、将第一垫片和第二垫片固定连接。\n\n[0071]需要说明的是，第一垫片和第二垫片可以通过焊接的方式固定连接，还可以通黏贴的方式进行固定连接，当然还可以采用其他连接件的方式进行固定连接。本申请实施例中对于第一垫片和第二垫片的过多方式不一一赘述。\n\n[0072]请参阅图6，图6为本申请实施例提供的微型显示面板制程方法另一种流程示意图。图7为本申请实施例提供的微型显示面板制程方法另一种场景示意图。其中，本申请实施例提供的微型显示面板制程方法，包括如下步骤：\n\n[0073]301、提供一玻璃基板，所述玻璃基板具有相对设置的第一面和第二面，以及相对设置的第一端和第二端。\n\n[0074]302、在所述第一面设置薄膜晶体层，所述薄膜晶体管层靠近所述第一端的一端与所述第一端对齐。\n\n[0075]303、在所述薄膜晶体管层远离所述玻璃基板的一面部分设置微型发光二极管层。\n\n[0076]304、在所述薄膜晶体管层远离所述玻璃基板的一面设置底片，将底片切割形成第一垫片和第二垫片。\n\n[0077]需要说明的是，处理通过激光将底片切割为第一垫片和第二垫片，还可以采用其他切除方式，比如，通过水刀进行切割。另外的，在切割过程中也可以将玻璃基板和薄膜晶体管一通切断。\n\n[0078]305、在所述薄膜晶体管层远离所述玻璃基板的一面设置第一垫片，且所述第一垫片与靠近所述第一端的一端与所述第一端对齐，所述微型发光二极管层处于同一层。\n\n[0079]306、所述第一垫片上设置有第二垫片，所述第二垫片靠近所述第一端的端部与所述第一端对齐，另一端与封装层连接。\n\n[0080]307、将连接部一端与所述第一垫片焊接，另一端与所述第二垫片焊接将第一垫片和第二垫片固定连接。\n\n[0081]本申请实施例由于采用上述方法，无需使用侧面线路印刷的工艺，无需进行磨边，也无需进行双面制程的保护。大幅度降低了制程难度，减少了面板的生产步骤和周期，降低制程成本，更有效的提高玻璃的利用率。同时，微型显示面板与微型显示面在拼接过程中，由于边缘没有设置绝缘层，因此，在拼接过程中不会因为挤压绝缘层而损坏绝缘层。\n\n[0082]请参阅图8，图8为本申请实施例提供的拼接显示面板结构示意图。其中，本申请实施例提供一种拼接显示面板100。其中，拼接显示面板100包括多个微型显示面板10，多个所述微型显示面板10紧密拼接，所述微型显示面板10 为以上实施例所述的微型显示面板10。由于以上实施例对微型显示面板10已经详细描述。因此，本申请实施例中对微型显示面板10不做过度赘述。\n\n[0083]以上对本申请实施例提供的一种微型显示面板、制程方法以及拼接显示面板进行了详细介绍。本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10759, 23813, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示装置。\n\n背景技术\n\n[0002]目前屏下光学指纹识别技术为市场追逐的热点，OLED显示屏由于其自身自发光特点，在屏下光学指纹识别技术上具有较大的先天优势，LCD显示屏由于较低的穿透率，液晶光阀的调光作用和较为复杂的叠层架构，在显示区进行光学指纹光路设计和传感器排布上具有较大的难度。\n\n[0003]现有的全面屏技术，由于摄像头的存在，无法做到包括摄像头区域的全屏显示，同时针对LCD的屏下光学指纹识别技术，由于LCD显示结构的复杂性，也存在诸多设计难点。故，有必要改善这一缺陷。\n\n发明内容\n\n[0004]本发明实施例提供一种显示装置，用于解决现有技术的显示装置，其摄像头区域无法显示，以及由于液晶屏较低的透过率，导致在显示区进行光学指纹光路设计和传感器排布上具有较大的难度的技术问题。\n\n[0005]本发明实施例提供一种显示装置，区分为摄像头放置区及非摄像头放置区，包括背光模组、显示模组、以及摄像头。所述背光模组开设有第一通孔，所述第一通孔的最大横截面对应于所述显示装置的所述摄像头放置区。所述显示模组位于所述背光模组上，所述显示模组包括对盒设置的阵列基板和彩膜基板、位于所述阵列基板和所述彩膜基板之间且对应于所述显示装置的所述非摄像头放置区内的液晶层、位于所述阵列基板靠近所述背光模组一侧且对应于所述显示装置的所述非摄像头放置区内的下偏光片、位于所述彩膜基板靠近所述液晶层一侧且对应于所述显示装置的所述非摄像头放置区内的内置上偏光片、以及位于所述彩膜基板背向所述阵列基板一侧且对应于所述显示装置的所述摄像头放置区内的微型LED模组。所述摄像头位于所述背光模组背向所述显示模组一侧且对应于所述显示装置的所述摄像头放置区内。其中，所述显示模组对应于所述显示装置的所述摄像头放置区内设置有指纹传感器，所述指纹传感器的感测单元在所述彩膜基板上的投影与所述微型LED模组中的微型LED单元无重叠。\n\n[0006]进一步的，所述指纹传感器设置于所述阵列基板面向所述彩膜基板的一侧。\n\n[0007]进一步的，所述指纹传感器的数量范围为15至35个。\n\n[0008]进一步的，所述微型LED单元包括红色微型LED单元、绿色微型LED单元、以及蓝色微型LED单元，所述微型LED单元为矩阵式排布，任一行均按照所述红色微型LED单元、所述绿色微型LED单元、所述蓝色微型LED单元的顺序循环排布，任一列的所述微型LED单元的颜色均相同。\n\n[0009]进一步的，所述指纹传感器的所述感测单元位于一行内的两个所述微型LED单元之间。\n\n[0010]进一步的，所述微型LED模组的整体宽度大于所述第一通孔的孔径。\n\n[0011]进一步的，所述第一通孔的孔径范围为2毫米至3毫米。\n\n[0012]进一步的，任一个所述微型LED单元的宽度范围为10微米至50微米。\n\n[0013]进一步的，所述背光模组包括光源和光学膜片组，所述光源位于所述光学膜片组一侧。\n\n[0014]进一步的，所述第一通孔内侧设置有光阻挡层。\n\n[0015]有益效果：本发明实施例提供的一种显示装置，通过在摄像头放置区内设置微型LED模组和指纹传感器，且所述微型LED模组中的微型LED单元与所述指纹传感器的感测单元在垂直方向上无重叠，可实现全屏显示功能，屏下光学指纹解锁功能，以及拍照功能。\n\n附图说明\n\n[0016]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0017]图1是本发明实施例提供的显示装置的一结构示意图。\n\n[0018]图2是本发明实施例提供的显示装置的反射光强度与指纹传感器数量的关系曲线图。\n\n[0019]图3是本发明实施例提供的显示模组对应于摄像头放置区的微型LED单元和指纹传感器的感测单元排布示意图。\n\n[0020]图4是本发明实施例提供的显示装置的又一结构示意图。\n\n具体实施方式\n\n[0021]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0022]如图1所示，本发明实施例提供的显示装置的一结构示意图，从图中可以很直观地看到本发明的各组成部分，以及各组成部分之间的相对位置关系，所述显示装置区分为摄像头放置区A1及非摄像头放置区A2，所述显示装置包括背光模组101、显示模组103、以及摄像头104。\n\n[0023]所述背光模组101开设有第一通孔102，所述第一通孔102的最大横截面对应于所述显示装置的所述摄像头放置区A1。\n\n[0024]所述显示模组103位于所述背光模组101上，所述显示模组103包括对盒设置的阵列基板1031和彩膜基板1032、位于所述阵列基板1031和所述彩膜基板1032之间且对应于所述显示装置的所述非摄像头放置区A2内的液晶层1033、位于所述阵列基板1031靠近所述背光模组101一侧且对应于所述显示装置的所述非摄像头放置区A2内的下偏光片1034、位于所述彩膜基板1032靠近所述液晶层1033一侧且对应于所述显示装置的所述非摄像头放置区A2内的内置上偏光片1035、以及位于所述彩膜基板1032背向所述阵列基板1031一侧且对应于所述显示装置的所述摄像头放置区A1内的微型LED模组1036。\n\n[0025]所述摄像头104位于所述背光模组101背向所述显示模组103一侧且对应于所述显示装置的所述摄像头放置区A1内。\n\n[0026]其中，所述显示模组103对应于所述显示装置的所述摄像头放置区A1内设置有指纹传感器105，所述指纹传感器105的感测单元在所述彩膜基板1032上的投影与所述微型LED模组1036中的微型LED单元无重叠。\n\n[0027]需要说明的是，本发明实施例通过在显示装置的摄像头放置区设置具有相同分辨率的副屏显示区，并在所述副屏显示区下方的显示模组上设置光学指纹解锁架构，由于副屏显示区的架构较为简单，易于指纹传感器的设计，可提高解锁的正确率，也不会影响到主屏区域的显示功能。\n\n[0028]需要说明的是，所述摄像头104在所述显示模组103的下方，当所述摄像头104不工作时，所述微型LED模组1036可正常显示，同时将所述摄像头104隐藏；当所述摄像头104工作时，可关闭所述微型LED模组1036，此时若环境光线不足，可将所述微型LED模组1036作为曝光灯使用。\n\n[0029]需要说明的是，所述微型LED模组1036中的各微型LED单元直接用作显示，其大小可以做到像素大小级别，每颗LED都是通过TFT电路单独控制。所述TFT电路(图中未示出)形成于所述微型LED模组1036的下方。所述微型LED模组1036中的各微型LED单元通过巨量转移、绑定、检测修复等工艺制备于所述TFT电路上方。其中，所述微型LED模组1036为透明显示，即所述显示装置的所述摄像头放置区A1可实现显示和拍照功能。\n\n[0030]需要说明的是，所述彩膜基板1032对应于所述显示装置的所述摄像头放置区A1内无光阻及内置上偏光片结构，以保证拍照时所述摄像头104有较大的进光量。\n\n[0031]需要说明的是，所述内置上偏光片1035是通过铝、银等金属线栅纳米压印方式制作于所述彩膜基板1032的内侧。\n\n[0032]在一种实施例中，所述指纹传感器105设置于所述阵列基板1031面向所述彩膜基板1032的一侧。\n\n[0033]在一种实施例中，所述指纹传感器105的数量范围为15至35个。\n\n[0034]在一种实施例中，所述微型LED单元包括红色微型LED单元10361、绿色微型LED单元10362、以及蓝色微型LED单元10363。\n\n[0035]在一种实施例中，所述微型LED单元为矩阵式排布，任一行均按照所述红色微型LED单元10361、所述绿色微型LED单元10362、所述蓝色微型LED单元10363的顺序循环排布，任一列的所述微型LED单元的颜色均相同。\n\n[0036]在一种实施例中，所述指纹传感器105的所述感测单元位于一行内的两个所述微型LED单元之间。\n\n[0037]在一种实施例中，所述微型LED模组1036的整体宽度大于所述第一通孔102的孔径，以隐藏下方所述液晶层1033的框胶(图中未示出)和所述背光模组101中的胶铁框(图中未示出)，避免对显示造成影响或出现黑边。\n\n[0038]在一种实施例中，所述指纹传感器105的所述感测单元的大小与所述微型LED单元的大小相当。所述指纹传感器105的上方的微型LED单元可遮挡大于20度角的反射光，防止被下方的所述指纹传感器105的所述感测单元接收，保证所述指纹传感器105的所述感测单元可以接收到指纹中“脊”和“谷”的差异性信号，识别指纹并解锁。\n\n[0039]需要说明的是，遮挡20度角的反射光，其中，20度是一个需要达到的数值，是因为所述指纹传感器105的所述感测单元需要接受准直光或者接近准直的光。\n\n[0040]在一种实施例中，所述第一通孔102的孔径范围为2毫米至3毫米。\n\n[0041]在一种实施例中，任一个所述微型LED单元的宽度范围为10微米至50微米。\n\n[0042]在一种实施例中，所述背光模组101包括光源1011和光学膜片组1012，所述光源1011位于所述光学膜片组1012一侧。即所述背光模组101为侧入式背光，所述背光模组101在所述显示装置的所述摄像头放置区A1进行挖孔处理，孔径处无液晶，采用与玻璃相同折射率的透明介质填充。所述摄像头104具体设置于所述光学膜片组1012的出光侧边缘。\n\n[0043]在一种实施例中，所述第一通孔102内侧设置有光阻挡层106。两侧的结构式光阻挡层106，作用是将主屏显示的背光和微型LED显示区域的显示隔开。\n\n[0044]如图2所示，本发明实施例提供的显示装置的反射光强度与指纹传感器数量的关系曲线图，可以看出在传感器数量为15至35个时，谷和脊的对比度比较大，有利于实现指纹的快速解锁。图中的横坐标为传感器数量，纵坐标为反射光强度，曲线为仿真曲线，光线设置为准直光线。\n\n[0045]如图3所示，本发明实施例提供的显示模组对应于摄像头放置区的微型LED单元和指纹传感器的感测单元排布示意图，所述微型LED单元包括红色微型LED单元301、绿色微型LED单元302、以及蓝色微型LED单元303，其中，所述微型LED单元为矩阵式排布，任一行均按照所述红色微型LED单元301、所述绿色微型LED单元302、所述蓝色微型LED单元303的顺序循环排布，任一列的所述微型LED单元的颜色均相同，所述指纹传感器304的所述感测单元305位于一行内的两个所述微型LED单元之间。所述指纹传感器304的所述感测单元305例如包含多个CMOS光学器件或多个CCD光学器件。\n\n[0046]需要说明的是，每个微型LED单元的芯片均是通过绑定工艺固定在彩膜基板(图中未示出)的外侧，所述指纹传感器304的所述感测单元305阵列则位于芯片之间，保证可接收到指纹的差异性信号。\n\n[0047]需要说明的是，本发明实施例提供的微型LED单元和所述传感器的感测单元的排布方式并不限于此，在其他实施例中，只要微型LED单元与所述传感器的感测单元在垂直方向上的排布无重叠的方案均属于本发明保护的范围内。\n\n[0048]如图4所示，本发明实施例提供的显示装置的又一结构示意图，从图中可以很直观地看到本发明的各组成部分，以及各组成部分之间的相对位置关系，所述显示装置区分为摄像头放置区A1及非摄像头放置区A2，所述显示装置包括背光模组401、显示模组403、以及摄像头404。\n\n[0049]所述背光模组401开设有第一通孔402，所述第一通孔402的最大横截面对应于所述显示装置的所述摄像头放置区A1。\n\n[0050]所述显示模组403位于所述背光模组401上，所述显示模组403包括对盒设置的阵列基板4031和彩膜基板4032、位于所述阵列基板4031和所述彩膜基板4032之间且对应于所述显示装置的所述非摄像头放置区A2内的液晶层4033、位于所述阵列基板4031靠近所述背光模组401一侧且对应于所述显示装置的所述非摄像头放置区A2内的下偏光片4034、位于所述彩膜基板4032靠近所述液晶层4033一侧且对应于所述显示装置的所述非摄像头放置区A2内的内置上偏光片4035、以及位于所述彩膜基板4032背向所述阵列基板4031一侧且对应于所述显示装置的所述摄像头放置区A1内的微型LED模组4036。\n\n[0051]所述摄像头404位于所述背光模组401背向所述显示模组403一侧且对应于所述显示装置的所述摄像头放置区A1内。\n\n[0052]其中，所述显示模组403对应于所述显示装置的所述摄像头放置区A1内设置有指纹传感器405，所述指纹传感器405的感测单元在所述彩膜基板4032上的投影与所述微型LED模组4036中的微型LED单元无重叠。\n\n[0053]其中，所述指纹传感器405设置于所述彩膜基板4032面向所述阵列基板4031的一侧。\n\n[0054]在一种实施例中，所述指纹传感器405的数量范围为15至35个。\n\n[0055]在一种实施例中，所述微型LED单元包括红色微型LED单元40361、绿色微型LED单元40362、以及蓝色微型LED单元40363。\n\n[0056]在一种实施例中，所述微型LED单元为矩阵式排布，任一行均按照所述红色微型LED单元40361、所述绿色微型LED单元40362、所述蓝色微型LED单元40363的顺序循环排布，任一列的所述微型LED单元的颜色均相同。\n\n[0057]在一种实施例中，所述指纹传感器405的所述感测单元位于一行内的两个所述微型LED单元之间。\n\n[0058]在一种实施例中，所述微型LED模组4036的整体宽度大于所述第一通孔402的孔径，以隐藏下方所述液晶层4033的框胶(图中未示出)和所述背光模组401中的胶铁框(图中未示出)，避免对显示造成影响或出现黑边。\n\n[0059]在一种实施例中，所述第一通孔402的孔径范围为2毫米至3毫米。\n\n[0060]在一种实施例中，任一个所述微型LED单元的宽度范围为10微米至50微米。\n\n[0061]在一种实施例中，所述背光模组401包括光源4011和光学膜片组4012，所述光源4011位于所述光学膜片组4012一侧。即所述背光模组401为侧入式背光，所述背光模组401在所述显示装置的所述摄像头放置区A1进行挖孔处理，孔径处无液晶，采用与玻璃相同折射率的透明介质填充。所述摄像头404具体设置于所述光学膜片组4012的出光侧边缘。\n\n[0062]在一种实施例中，所述第一通孔402内侧设置有光阻挡层406。两侧的结构式光阻挡层406，作用是将主屏显示的背光和微型LED显示区域的显示隔开。\n\n[0063]本发明实施例提供的显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相机、导航仪等任何具有显示功能的产品或部件。\n\n[0064]综上所述，本发明实施例提供的一种显示装置，通过在摄像头放置区内设置微型LED模组和指纹传感器，且所述微型LED模组中的微型LED单元与所述指纹传感器的感测单元在垂直方向上无重叠，可实现全屏显示功能，屏下光学指纹解锁功能，以及拍照功能，解决了现有技术的显示装置，其摄像头区域无法显示，以及由于液晶屏较低的透过率，导致在显示区进行光学指纹光路设计和传感器排布上具有较大的难度的技术问题。\n\n[0065]以上对本发明实施例所提供的一种显示装置进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示装置。\n\n背景技术\n\n[0002]目前屏下光学指纹识别技术为市场追逐的热点，OLED显示屏由于其自身自发光特点，在屏下光学指纹识别技术上具有较大的先天优势，LCD显示屏由于较低的穿透率，液晶光阀的调光作用和较为复杂的叠层架构，在显示区进行光学指纹光路设计和传感器排布上具有较大的难度。\n\n[0003]现有的全面屏技术，由于摄像头的存在，无法做到包括摄像头区域的全屏显示，同时针对LCD的屏下光学指纹识别技术，由于LCD显示结构的复杂性，也存在诸多设计难点。故，有必要改善这一缺陷。\n\n发明内容\n\n[0004]本发明实施例提供一种显示装置，用于解决现有技术的显示装置，其摄像头区域无法显示，以及由于液晶屏较低的透过率，导致在显示区进行光学指纹光路设计和传感器排布上具有较大的难度的技术问题。\n\n[0005]本发明实施例提供一种显示装置，区分为摄像头放置区及非摄像头放置区，包括背光模组、显示模组、以及摄像头。所述背光模组开设有第一通孔，所述第一通孔的最大横截面对应于所述显示装置的所述摄像头放置区。所述显示模组位于所述背光模组上，所述显示模组包括对盒设置的阵列基板和彩膜基板、位于所述阵列基板和所述彩膜基板之间且对应于所述显示装置的所述非摄像头放置区内的液晶层、位于所述阵列基板靠近所述背光模组一侧且对应于所述显示装置的所述非摄像头放置区内的下偏光片、位于所述彩膜基板靠近所述液晶层一侧且对应于所述显示装置的所述非摄像头放置区内的内置上偏光片、以及位于所述彩膜基板背向所述阵列基板一侧且对应于所述显示装置的所述摄像头放置区内的微型LED模组。所述摄像头位于所述背光模组背向所述显示模组一侧且对应于所述显示装置的所述摄像头放置区内。其中，所述显示模组对应于所述显示装置的所述摄像头放置区内设置有指纹传感器，所述指纹传感器的感测单元在所述彩膜基板上的投影与所述微型LED模组中的微型LED单元无重叠。\n\n[0006]进一步的，所述指纹传感器设置于所述阵列基板面向所述彩膜基板的一侧。\n\n[0007]进一步的，所述指纹传感器的数量范围为15至35个。\n\n[0008]进一步的，所述微型LED单元包括红色微型LED单元、绿色微型LED单元、以及蓝色微型LED单元，所述微型LED单元为矩阵式排布，任一行均按照所述红色微型LED单元、所述绿色微型LED单元、所述蓝色微型LED单元的顺序循环排布，任一列的所述微型LED单元的颜色均相同。\n\n[0009]进一步的，所述指纹传感器的所述感测单元位于一行内的两个所述微型LED单元之间。\n\n[0010]进一步的，所述微型LED模组的整体宽度大于所述第一通孔的孔径。\n\n[0011]进一步的，所述第一通孔的孔径范围为2毫米至3毫米。\n\n[0012]进一步的，任一个所述微型LED单元的宽度范围为10微米至50微米。\n\n[0013]进一步的，所述背光模组包括光源和光学膜片组，所述光源位于所述光学膜片组一侧。\n\n[0014]进一步的，所述第一通孔内侧设置有光阻挡层。\n\n[0015]有益效果：本发明实施例提供的一种显示装置，通过在摄像头放置区内设置微型LED模组和指纹传感器，且所述微型LED模组中的微型LED单元与所述指纹传感器的感测单元在垂直方向上无重叠，可实现全屏显示功能，屏下光学指纹解锁功能，以及拍照功能。\n\n附图说明\n\n[0016]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0017]图1是本发明实施例提供的显示装置的一结构示意图。\n\n[0018]图2是本发明实施例提供的显示装置的反射光强度与指纹传感器数量的关系曲线图。\n\n[0019]图3是本发明实施例提供的显示模组对应于摄像头放置区的微型LED单元和指纹传感器的感测单元排布示意图。\n\n[0020]图4是本发明实施例提供的显示装置的又一结构示意图。\n\n具体实施方式\n\n[0021]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0022]如图1所示，本发明实施例提供的显示装置的一结构示意图，从图中可以很直观地看到本发明的各组成部分，以及各组成部分之间的相对位置关系，所述显示装置区分为摄像头放置区A1及非摄像头放置区A2，所述显示装置包括背光模组101、显示模组103、以及摄像头104。\n\n[0023]所述背光模组101开设有第一通孔102，所述第一通孔102的最大横截面对应于所述显示装置的所述摄像头放置区A1。\n\n[0024]所述显示模组103位于所述背光模组101上，所述显示模组103包括对盒设置的阵列基板1031和彩膜基板1032、位于所述阵列基板1031和所述彩膜基板1032之间且对应于所述显示装置的所述非摄像头放置区A2内的液晶层1033、位于所述阵列基板1031靠近所述背光模组101一侧且对应于所述显示装置的所述非摄像头放置区A2内的下偏光片1034、位于所述彩膜基板1032靠近所述液晶层1033一侧且对应于所述显示装置的所述非摄像头放置区A2内的内置上偏光片1035、以及位于所述彩膜基板1032背向所述阵列基板1031一侧且对应于所述显示装置的所述摄像头放置区A1内的微型LED模组1036。\n\n[0025]所述摄像头104位于所述背光模组101背向所述显示模组103一侧且对应于所述显示装置的所述摄像头放置区A1内。\n\n[0026]其中，所述显示模组103对应于所述显示装置的所述摄像头放置区A1内设置有指纹传感器105，所述指纹传感器105的感测单元在所述彩膜基板1032上的投影与所述微型LED模组1036中的微型LED单元无重叠。\n\n[0027]需要说明的是，本发明实施例通过在显示装置的摄像头放置区设置具有相同分辨率的副屏显示区，并在所述副屏显示区下方的显示模组上设置光学指纹解锁架构，由于副屏显示区的架构较为简单，易于指纹传感器的设计，可提高解锁的正确率，也不会影响到主屏区域的显示功能。\n\n[0028]需要说明的是，所述摄像头104在所述显示模组103的下方，当所述摄像头104不工作时，所述微型LED模组1036可正常显示，同时将所述摄像头104隐藏；当所述摄像头104工作时，可关闭所述微型LED模组1036，此时若环境光线不足，可将所述微型LED模组1036作为曝光灯使用。\n\n[0029]需要说明的是，所述微型LED模组1036中的各微型LED单元直接用作显示，其大小可以做到像素大小级别，每颗LED都是通过TFT电路单独控制。所述TFT电路(图中未示出)形成于所述微型LED模组1036的下方。所述微型LED模组1036中的各微型LED单元通过巨量转移、绑定、检测修复等工艺制备于所述TFT电路上方。其中，所述微型LED模组1036为透明显示，即所述显示装置的所述摄像头放置区A1可实现显示和拍照功能。\n\n[0030]需要说明的是，所述彩膜基板1032对应于所述显示装置的所述摄像头放置区A1内无光阻及内置上偏光片结构，以保证拍照时所述摄像头104有较大的进光量。\n\n[0031]需要说明的是，所述内置上偏光片1035是通过铝、银等金属线栅纳米压印方式制作于所述彩膜基板1032的内侧。\n\n[0032]在一种实施例中，所述指纹传感器105设置于所述阵列基板1031面向所述彩膜基板1032的一侧。\n\n[0033]在一种实施例中，所述指纹传感器105的数量范围为15至35个。\n\n[0034]在一种实施例中，所述微型LED单元包括红色微型LED单元10361、绿色微型LED单元10362、以及蓝色微型LED单元10363。\n\n[0035]在一种实施例中，所述微型LED单元为矩阵式排布，任一行均按照所述红色微型LED单元10361、所述绿色微型LED单元10362、所述蓝色微型LED单元10363的顺序循环排布，任一列的所述微型LED单元的颜色均相同。\n\n[0036]在一种实施例中，所述指纹传感器105的所述感测单元位于一行内的两个所述微型LED单元之间。\n\n[0037]在一种实施例中，所述微型LED模组1036的整体宽度大于所述第一通孔102的孔径，以隐藏下方所述液晶层1033的框胶(图中未示出)和所述背光模组101中的胶铁框(图中未示出)，避免对显示造成影响或出现黑边。\n\n[0038]在一种实施例中，所述指纹传感器105的所述感测单元的大小与所述微型LED单元的大小相当。所述指纹传感器105的上方的微型LED单元可遮挡大于20度角的反射光，防止被下方的所述指纹传感器105的所述感测单元接收，保证所述指纹传感器105的所述感测单元可以接收到指纹中“脊”和“谷”的差异性信号，识别指纹并解锁。\n\n[0039]需要说明的是，遮挡20度角的反射光，其中，20度是一个需要达到的数值，是因为所述指纹传感器105的所述感测单元需要接受准直光或者接近准直的光。\n\n[0040]在一种实施例中，所述第一通孔102的孔径范围为2毫米至3毫米。\n\n[0041]在一种实施例中，任一个所述微型LED单元的宽度范围为10微米至50微米。\n\n[0042]在一种实施例中，所述背光模组101包括光源1011和光学膜片组1012，所述光源1011位于所述光学膜片组1012一侧。即所述背光模组101为侧入式背光，所述背光模组101在所述显示装置的所述摄像头放置区A1进行挖孔处理，孔径处无液晶，采用与玻璃相同折射率的透明介质填充。所述摄像头104具体设置于所述光学膜片组1012的出光侧边缘。\n\n[0043]在一种实施例中，所述第一通孔102内侧设置有光阻挡层106。两侧的结构式光阻挡层106，作用是将主屏显示的背光和微型LED显示区域的显示隔开。\n\n[0044]如图2所示，本发明实施例提供的显示装置的反射光强度与指纹传感器数量的关系曲线图，可以看出在传感器数量为15至35个时，谷和脊的对比度比较大，有利于实现指纹的快速解锁。图中的横坐标为传感器数量，纵坐标为反射光强度，曲线为仿真曲线，光线设置为准直光线。\n\n[0045]如图3所示，本发明实施例提供的显示模组对应于摄像头放置区的微型LED单元和指纹传感器的感测单元排布示意图，所述微型LED单元包括红色微型LED单元301、绿色微型LED单元302、以及蓝色微型LED单元303，其中，所述微型LED单元为矩阵式排布，任一行均按照所述红色微型LED单元301、所述绿色微型LED单元302、所述蓝色微型LED单元303的顺序循环排布，任一列的所述微型LED单元的颜色均相同，所述指纹传感器304的所述感测单元305位于一行内的两个所述微型LED单元之间。所述指纹传感器304的所述感测单元305例如包含多个CMOS光学器件或多个CCD光学器件。\n\n[0046]需要说明的是，每个微型LED单元的芯片均是通过绑定工艺固定在彩膜基板(图中未示出)的外侧，所述指纹传感器304的所述感测单元305阵列则位于芯片之间，保证可接收到指纹的差异性信号。\n\n[0047]需要说明的是，本发明实施例提供的微型LED单元和所述传感器的感测单元的排布方式并不限于此，在其他实施例中，只要微型LED单元与所述传感器的感测单元在垂直方向上的排布无重叠的方案均属于本发明保护的范围内。\n\n[0048]如图4所示，本发明实施例提供的显示装置的又一结构示意图，从图中可以很直观地看到本发明的各组成部分，以及各组成部分之间的相对位置关系，所述显示装置区分为摄像头放置区A1及非摄像头放置区A2，所述显示装置包括背光模组401、显示模组403、以及摄像头404。\n\n[0049]所述背光模组401开设有第一通孔402，所述第一通孔402的最大横截面对应于所述显示装置的所述摄像头放置区A1。\n\n[0050]所述显示模组403位于所述背光模组401上，所述显示模组403包括对盒设置的阵列基板4031和彩膜基板4032、位于所述阵列基板4031和所述彩膜基板4032之间且对应于所述显示装置的所述非摄像头放置区A2内的液晶层4033、位于所述阵列基板4031靠近所述背光模组401一侧且对应于所述显示装置的所述非摄像头放置区A2内的下偏光片4034、位于所述彩膜基板4032靠近所述液晶层4033一侧且对应于所述显示装置的所述非摄像头放置区A2内的内置上偏光片4035、以及位于所述彩膜基板4032背向所述阵列基板4031一侧且对应于所述显示装置的所述摄像头放置区A1内的微型LED模组4036。\n\n[0051]所述摄像头404位于所述背光模组401背向所述显示模组403一侧且对应于所述显示装置的所述摄像头放置区A1内。\n\n[0052]其中，所述显示模组403对应于所述显示装置的所述摄像头放置区A1内设置有指纹传感器405，所述指纹传感器405的感测单元在所述彩膜基板4032上的投影与所述微型LED模组4036中的微型LED单元无重叠。\n\n[0053]其中，所述指纹传感器405设置于所述彩膜基板4032面向所述阵列基板4031的一侧。\n\n[0054]在一种实施例中，所述指纹传感器405的数量范围为15至35个。\n\n[0055]在一种实施例中，所述微型LED单元包括红色微型LED单元40361、绿色微型LED单元40362、以及蓝色微型LED单元40363。\n\n[0056]在一种实施例中，所述微型LED单元为矩阵式排布，任一行均按照所述红色微型LED单元40361、所述绿色微型LED单元40362、所述蓝色微型LED单元40363的顺序循环排布，任一列的所述微型LED单元的颜色均相同。\n\n[0057]在一种实施例中，所述指纹传感器405的所述感测单元位于一行内的两个所述微型LED单元之间。\n\n[0058]在一种实施例中，所述微型LED模组4036的整体宽度大于所述第一通孔402的孔径，以隐藏下方所述液晶层4033的框胶(图中未示出)和所述背光模组401中的胶铁框(图中未示出)，避免对显示造成影响或出现黑边。\n\n[0059]在一种实施例中，所述第一通孔402的孔径范围为2毫米至3毫米。\n\n[0060]在一种实施例中，任一个所述微型LED单元的宽度范围为10微米至50微米。\n\n[0061]在一种实施例中，所述背光模组401包括光源4011和光学膜片组4012，所述光源4011位于所述光学膜片组4012一侧。即所述背光模组401为侧入式背光，所述背光模组401在所述显示装置的所述摄像头放置区A1进行挖孔处理，孔径处无液晶，采用与玻璃相同折射率的透明介质填充。所述摄像头404具体设置于所述光学膜片组4012的出光侧边缘。\n\n[0062]在一种实施例中，所述第一通孔402内侧设置有光阻挡层406。两侧的结构式光阻挡层406，作用是将主屏显示的背光和微型LED显示区域的显示隔开。\n\n[0063]本发明实施例提供的显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相机、导航仪等任何具有显示功能的产品或部件。\n\n[0064]综上所述，本发明实施例提供的一种显示装置，通过在摄像头放置区内设置微型LED模组和指纹传感器，且所述微型LED模组中的微型LED单元与所述指纹传感器的感测单元在垂直方向上无重叠，可实现全屏显示功能，屏下光学指纹解锁功能，以及拍照功能，解决了现有技术的显示装置，其摄像头区域无法显示，以及由于液晶屏较低的透过率，导致在显示区进行光学指纹光路设计和传感器排布上具有较大的难度的技术问题。\n\n[0065]以上对本发明实施例所提供的一种显示装置进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。');
INSERT INTO `os_patent_instruction_text` VALUES (10760, 23814, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示面板及其制备方法。\n\n背景技术\n\n[0002]微型LED，是指将LED结构设计薄膜化、微小化、以及阵列化，每个微型LED的尺寸仅1至100微米左右。微型LED与OLED一样，能够实现自发光，无需背光源，而且微型LED的效率更高，因此比OLED更加节能，且微型LED的发光寿命更长、亮度更高，同时兼具可实现超高像素数、超高解析度、无缝拼接等诸多优势。\n\n[0003]现有技术的显示面板，通过在TFT基板上转移完微型LED芯片后，再在其上制作彩膜层，而彩膜层需要先用黄光制程制作黑色堤部或者黑色矩阵防止子像素之间发生串扰，黄光制程中的高温以及碱性显影液都会对微型LED芯片造成影响，使其失效，从而影响整体显示效果。故，有必要改善这一缺陷。\n\n发明内容\n\n[0004]本发明实施例提供一种显示面板，用于解决现有技术的显示面板，由于在微型LED上制作黑色矩阵，其黄光制程中的高温以及碱性显影液对微型LED造成影响，导致微型LED失效，从而影响显示面板整体显示效果的技术问题。\n\n[0005]本发明实施例提供一种显示面板，包括：第一玻璃基板、薄膜晶体管层、黑色矩阵、第一颜色微型LED、像素层以及第二玻璃基板；其中，所述薄膜晶体管层位于所述第一玻璃基板上；所述黑色矩阵位于所述薄膜晶体管层上、且阵列排布；所述第一颜色微型LED位于所述薄膜晶体管层上、且位于所述黑色矩阵之间，所述第一颜色微型LED的高度小于所述黑色矩阵的高度；所述像素层位于所述第一颜色微型LED上，包括第二颜色子像素和第三颜色子像素；所述第二玻璃基板位于所述黑色矩阵和所述像素层上。\n\n[0006]进一步的，所述第一颜色微型LED为蓝色微型LED，所述第二颜色子像素和所述第三颜色子像素分别为红色子像素和绿色子像素。\n\n[0007]进一步的，所述红色子像素和所述绿色子像素组成一个重复单元，所述重复单元以一个子像素的宽度为间距循环排布。\n\n[0008]进一步的，所述红色子像素和所述绿色子像素分别由红色量子点材料和绿色量子点材料制作而成。\n\n[0009]进一步的，所述黑色矩阵的厚度范围为10微米至12微米。\n\n[0010]进一步的，所述像素层的厚度范围为5微米至7微米。\n\n[0011]本发明实施例提供一种显示面板的制备方法，包括步骤：在第一玻璃基板上制备薄膜晶体管层；在所述薄膜晶体管层上制备黑色矩阵，所述黑色矩阵阵列排布；在所述薄膜晶体管层上制备第一颜色微型LED，所述第一颜色微型LED位于所述黑色矩阵之间，且所述第一颜色微型LED的高度小于所述黑色矩阵的高度；在所述第一颜色微型LED上制备像素层，所述像素层包括第二颜色子像素和第三颜色子像素；在所述黑色矩阵和所述像素层上封装第二玻璃基板。\n\n[0012]进一步的，所述第一颜色微型LED为蓝色微型LED，所述第二颜色子像素和所述第三颜色子像素分别为红色子像素和绿色子像素。\n\n[0013]进一步的，所述红色子像素和所述绿色子像素分别由红色量子点材料和绿色量子点材料制作而成。\n\n[0014]进一步的，所述黑色矩阵的厚度范围为10微米至12微米。\n\n[0015]有益效果：本发明实施例提供的一种显示面板，在相邻的微型LED以及相邻的子像素之间，均设置有黑色矩阵做阻隔，所采用的高膜厚的黑色矩阵既可充当微型LED两侧的黑色矩阵，阻挡微型LED的侧面出光，防止不同微型LED之间的光发生串扰，又可充当像素层的像素限定层，限制子像素打印区域的同时形成子像素的形状，还可防止不同子像素之间发生串扰，既简化制程，又大大提高了显示面板的对比度。\n\n附图说明\n\n[0016]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0017]图1是本发明实施例提供的显示面板的结构示意图。\n\n[0018]图2是本发明实施例提供的显示面板的制备方法流程图。\n\n[0019]图3a～3e是本发明实施例提供的显示面板的制备方法工艺流程图。\n\n具体实施方式\n\n[0020]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0021]如图1所示，本发明实施例提供的显示面板的结构示意图，从图中可以很直观地看到本发明的各组成部分，以及各组成部分之间的相对位置关系，所述显示面板包括：第一玻璃基板101、薄膜晶体管层102、黑色矩阵103、第一颜色微型LED104、像素层105以及第二玻璃基板106；其中，所述薄膜晶体管层102位于所述第一玻璃基板101上；所述黑色矩阵103位于所述薄膜晶体管层102上、且阵列排布；所述第一颜色微型LED104位于所述薄膜晶体管层102上、且位于所述黑色矩阵103之间，所述第一颜色微型LED104的高度小于所述黑色矩阵103的高度；所述像素层105位于所述第一颜色微型LED104上，包括第二颜色子像素1051和第三颜色子像素1052；所述第二玻璃基板106位于所述黑色矩阵103和所述像素层105上。\n\n[0022]需要说明的是，本实施例中，所述第一颜色微型LED104作为背光源，所述像素层105作为彩色滤光层，所述第一颜色微型LED104与所述第二颜色子像素1051和所述第三颜色子像素1052组合可以实现全彩显示。\n\n[0023]需要说明的是，本实施例通过将黑色矩阵103设置在薄膜晶体管层102上，将第一颜色微型LED104设置在黑色矩阵103之间，可以避免现有技术中，先形成微型LED后形成黑色矩阵，导致黄光制程中的高温以及碱性显影液对微型LED造成影响，导致微型LED失效，从而影响显示面板整体显示效果；且本实施例通过将黑色矩阵103的高度设置为大于第一颜色微型LED104的高度，将像素层105设置于第一颜色微型LED104上，即所述黑色矩阵103既可充当第一颜色微型LED104两侧的黑色矩阵，阻挡第一颜色微型LED104的侧面出光，防止不同微型LED之间的光发生串扰，又可充当像素层105的像素限定层，限制子像素打印区域的同时形成子像素的形状，还可防止不同子像素之间发生串扰，可以简化制程。\n\n[0024]在一种实施例中，所述第一颜色微型LED104为蓝色微型LED，所述第二颜色子像素1051和所述第三颜色子像素1052分别为红色子像素和绿色子像素。本实施例是以蓝色微型LED激发红、绿子像素来获得彩色显示效果，在其他实施例中，所述第一颜色微型LED104还可为红色微型LED或者绿色微型LED，相对应的，所述第二颜色子像素1051和所述第三颜色子像素1052分别为绿色子像素和蓝色子像素、或者所述第二颜色子像素1051和所述第三颜色子像素1052分别为红色子像素和蓝色子像素。\n\n[0025]在一种实施例中，所述红色子像素和所述绿色子像素组成一个重复单元，所述重复单元以一个子像素的宽度为间距循环排布，即所述间隔区域107为空白区域或填充有透明材料，其中，缺失的蓝色子像素(即图中的间隔区域107)由蓝色微型LED提供。\n\n[0026]在一种实施例中，所述红色子像素和所述绿色子像素分别由红色量子点材料和绿色量子点材料制作而成。量子点技术被认为是能够与OLED相抗衡的下一代显示技术的核心，量子点材料具有高发光效率、高色纯度、广色域等优点。将量子点材料用作彩色滤光层，能够为显示面板提供更加逼真的色彩显示。本发明实施例集合了微型LED与量子点的优势，可使得显示面板具有低功耗、高性能、长寿命等优点。\n\n[0027]在一种实施例中，所述黑色矩阵103的厚度范围为10微米至12微米，本实施例通过采用高膜厚的黑色矩阵，同时充当微型LED的阻隔层以及像素层的界定层，简化制程的同时，还避免了现有技术中，先形成微型LED后形成黑色矩阵，导致黄光制程中的高温以及碱性显影液对微型LED造成影响，导致微型LED失效，从而影响显示面板整体显示效果。\n\n[0028]在一种实施例中，所述像素层105的厚度范围为5微米至7微米。具体地，一般的微型LED芯片的高度范围为5微米至6微米左右，本发明实施例提供的黑色矩阵的高度可达到10微米至12微米，因此，本发明实施例的像素层105的高度范围可达到5微米至7微米，若像素层105为量子点材料打印而成，这个高度范围下的量子点材料的色纯度、色饱和度等指标均能够满足正常显示需求。\n\n[0029]如图2所示，本发明实施例提供的显示面板的制备方法流程图，包括步骤：\n\n[0030]S201、在第一玻璃基板上制备薄膜晶体管层；\n\n[0031]S202、在所述薄膜晶体管层上制备黑色矩阵，所述黑色矩阵阵列排布；\n\n[0032]S203、在所述薄膜晶体管层上制备第一颜色微型LED，所述第一颜色微型LED位于所述黑色矩阵之间，且所述第一颜色微型LED的高度小于所述黑色矩阵的高度；\n\n[0033]S204、在所述第一颜色微型LED上制备像素层，所述像素层包括第二颜色子像素和第三颜色子像素；\n\n[0034]S205、在所述黑色矩阵和所述像素层上封装第二玻璃基板。\n\n[0035]具体地，在S201中，在洁净干燥的第一玻璃基板上制备的薄膜晶体管层，是作为第一颜色微型LED芯片的驱动；在S202中，使用黄光制程制备黑色矩阵，其中制备黑色矩阵的步骤包括：光阻的涂布、预烘烤、曝光、显影和后烘；在S203中，在制作完黑色矩阵的基板上制备的第一颜色微型LED芯片，是作为像素层的激发光源；在S204中，使用喷墨打印技术打印的第二颜色子像素和第三颜色子像素，是作为彩膜层中的第二颜色子像素和第三颜色子像素(其中第一颜色子像素由第一颜色微型LED芯片提供)；在S205中，在最上层用第二玻璃基板进行封装，得到最终的显示面板。\n\n[0036]需要说明的是，制作这种以微型LED作为背光源、以像素层作为彩色滤光层的结构有对侧、同侧两种方案。对侧就是分别制作微型LED背光基板和像素层彩膜基板后将两者进行对位，此方案制程繁琐，且需要高精度对位设备的支持，资源有限。同侧方案即在微型LED上制作彩色滤光层，本发明实施例通过先制备黄光制程的黑色矩阵，再转移微型LED芯片，由此避免了黄光制程对微型LED芯片的伤害，并简化了制程，无需对位操作，降低了制作难度。\n\n[0037]在一种实施例中，所述第一颜色微型LED为蓝色微型LED，所述第二颜色子像素和所述第三颜色子像素分别为红色子像素和绿色子像素。本实施例是以蓝色微型LED激发红、绿子像素来获得彩色显示效果，在其他实施例中，所述第一颜色微型LED还可为红色微型LED或者绿色微型LED，相对应的，所述第二颜色子像素和所述第三颜色子像素分别为绿色子像素和蓝色子像素、或者所述第二颜色子像素和所述第三颜色子像素分别为红色子像素和蓝色子像素。\n\n[0038]在一种实施例中，所述红色子像素和所述绿色子像素组成一个重复单元，所述重复单元以一个子像素的宽度为间距循环排布，即所述间隔区域为空白区域或填充有透明材料，其中，缺失的蓝色子像素由蓝色微型LED提供。\n\n[0039]在一种实施例中，所述红色子像素和所述绿色子像素分别由红色量子点材料和绿色量子点材料制作而成。\n\n[0040]在一种实施例中，所述黑色矩阵的厚度范围为10微米至12微米。\n\n[0041]在一种实施例中，所述像素层105的厚度范围为5微米至7微米。具体地，一般的微型LED芯片的高度范围为5微米至6微米左右，本发明实施例提供的黑色矩阵的高度可达到10微米至12微米，因此，本发明实施例的像素层105的高度范围可达到5微米至7微米，若像素层105为量子点材料打印而成，这个高度范围下的量子点材料的色纯度、色饱和度等指标均能够满足正常显示需求。\n\n[0042]如图3a～3e所示，本发明实施例提供的显示面板的制备方法工艺流程图，首先在第一玻璃基板301上制备薄膜晶体管层302，所述薄膜晶体管层302例如包括缓冲层(图中未示出)、位于所述缓冲层上的半导体层(图中未示出)、位于所述半导体层上的栅绝缘层(图中未示出)、位于所述栅绝缘层上的栅极(图中未示出)、位于所述栅极上的层间绝缘层(图中未示出)、以及位于所述层间绝缘层上的源极(图中未示出)和漏极(图中未示出)，所述源极和所述漏极分别通过第一孔和第二孔与所述半导体层的两端相连；然后在所述薄膜晶体管层302上制备黑色矩阵303，所述黑色矩阵303的高度可达到10微米至12微米的范围；接下来在所述薄膜晶体管层302上制备第一颜色微型LED304，且所述第一颜色微型LED304位于所述黑色矩阵303之间，所述第一颜色微型LED304的高度小于所述黑色矩阵303的高度，本实施例先制备黑色矩阵303再制备第一颜色微型LED304，可避免制备黑色矩阵303的黄光制程中高温以及碱性显影液对微型LED造成的影响；再然后在所述第一颜色微型LED304上制备像素层305，所述像素层305包括第二颜色子像素3051和第三颜色子像素3052，所述第一颜色微型LED304与所述第二颜色子像素3051和所述第三颜色子像素3052组合可实现全彩显示；最后在所述黑色矩阵303和所述像素层305上封装第二玻璃基板306，制得所述显示面板。\n\n[0043]需要说明的是，制备黑色矩阵303的步骤包括：光阻的涂布、预烘烤、曝光、显影和后烘。本实施例先制备黑色矩阵303再制备第一颜色微型LED304，可避免制备黑色矩阵303的黄光制程中高温以及碱性显影液对微型LED造成的影响。且本发明实施例通过采用的高膜厚的黑色矩阵既可充当微型LED两侧的黑色矩阵，阻挡微型LED的侧面出光，防止不同微型LED之间的光发生串扰，又可充当像素层的像素限定层，限制子像素打印区域的同时形成子像素的形状，还可防止不同子像素之间发生串扰。\n\n[0044]在一种实施例中，所述第一颜色微型LED304为蓝色微型LED，所述第二颜色子像素3051和所述第三颜色子像素3052分别为红色子像素和绿色子像素。本实施例是以蓝色微型LED激发红、绿子像素来获得彩色显示效果，在其他实施例中，所述第一颜色微型LED304还可为红色微型LED或者绿色微型LED，相对应的，所述第二颜色子像素3051和所述第三颜色子像素3052分别为绿色子像素和蓝色子像素、或者所述第二颜色子像素3051和所述第三颜色子像素3052分别为红色子像素和蓝色子像素。\n\n[0045]在一种实施例中，所述红色子像素和所述绿色子像素组成一个重复单元，所述重复单元以一个子像素的宽度为间距循环排布，即所述间隔区域307为空白区域或填充有透明材料，其中，缺失的蓝色子像素(即图中的间隔区域307)由蓝色微型LED提供。\n\n[0046]在一种实施例中，所述红色子像素和所述绿色子像素分别由红色量子点材料和绿色量子点材料制作而成。\n\n[0047]本发明实施例提供一种显示装置，包括驱动芯片和上述的显示面板。本发明实施例提供的显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相机、导航仪等任何具有显示功能的产品或部件。\n\n[0048]综上所述，本发明实施例提供的一种显示面板，通过在相邻的微型LED以及相邻的子像素之间，均设置有黑色矩阵做阻隔，所采用的高膜厚的黑色矩阵既可充当微型LED两侧的黑色矩阵，阻挡微型LED的侧面出光，防止不同微型LED之间的光发生串扰，又可充当像素层的像素限定层，限制子像素打印区域的同时形成子像素的形状，还可防止不同子像素之间发生串扰，既简化制程，又大大提高了显示面板的对比度，解决了现有技术的显示面板，由于在微型LED上制作黑色矩阵，其黄光制程中的高温以及碱性显影液对微型LED造成影响，导致微型LED失效，从而影响显示面板整体显示效果的技术问题。\n\n[0049]以上对本发明实施例所提供的一种显示面板及其制备方法进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示面板及其制备方法。\n\n背景技术\n\n[0002]微型LED，是指将LED结构设计薄膜化、微小化、以及阵列化，每个微型LED的尺寸仅1至100微米左右。微型LED与OLED一样，能够实现自发光，无需背光源，而且微型LED的效率更高，因此比OLED更加节能，且微型LED的发光寿命更长、亮度更高，同时兼具可实现超高像素数、超高解析度、无缝拼接等诸多优势。\n\n[0003]现有技术的显示面板，通过在TFT基板上转移完微型LED芯片后，再在其上制作彩膜层，而彩膜层需要先用黄光制程制作黑色堤部或者黑色矩阵防止子像素之间发生串扰，黄光制程中的高温以及碱性显影液都会对微型LED芯片造成影响，使其失效，从而影响整体显示效果。故，有必要改善这一缺陷。\n\n发明内容\n\n[0004]本发明实施例提供一种显示面板，用于解决现有技术的显示面板，由于在微型LED上制作黑色矩阵，其黄光制程中的高温以及碱性显影液对微型LED造成影响，导致微型LED失效，从而影响显示面板整体显示效果的技术问题。\n\n[0005]本发明实施例提供一种显示面板，包括：第一玻璃基板、薄膜晶体管层、黑色矩阵、第一颜色微型LED、像素层以及第二玻璃基板；其中，所述薄膜晶体管层位于所述第一玻璃基板上；所述黑色矩阵位于所述薄膜晶体管层上、且阵列排布；所述第一颜色微型LED位于所述薄膜晶体管层上、且位于所述黑色矩阵之间，所述第一颜色微型LED的高度小于所述黑色矩阵的高度；所述像素层位于所述第一颜色微型LED上，包括第二颜色子像素和第三颜色子像素；所述第二玻璃基板位于所述黑色矩阵和所述像素层上。\n\n[0006]进一步的，所述第一颜色微型LED为蓝色微型LED，所述第二颜色子像素和所述第三颜色子像素分别为红色子像素和绿色子像素。\n\n[0007]进一步的，所述红色子像素和所述绿色子像素组成一个重复单元，所述重复单元以一个子像素的宽度为间距循环排布。\n\n[0008]进一步的，所述红色子像素和所述绿色子像素分别由红色量子点材料和绿色量子点材料制作而成。\n\n[0009]进一步的，所述黑色矩阵的厚度范围为10微米至12微米。\n\n[0010]进一步的，所述像素层的厚度范围为5微米至7微米。\n\n[0011]本发明实施例提供一种显示面板的制备方法，包括步骤：在第一玻璃基板上制备薄膜晶体管层；在所述薄膜晶体管层上制备黑色矩阵，所述黑色矩阵阵列排布；在所述薄膜晶体管层上制备第一颜色微型LED，所述第一颜色微型LED位于所述黑色矩阵之间，且所述第一颜色微型LED的高度小于所述黑色矩阵的高度；在所述第一颜色微型LED上制备像素层，所述像素层包括第二颜色子像素和第三颜色子像素；在所述黑色矩阵和所述像素层上封装第二玻璃基板。\n\n[0012]进一步的，所述第一颜色微型LED为蓝色微型LED，所述第二颜色子像素和所述第三颜色子像素分别为红色子像素和绿色子像素。\n\n[0013]进一步的，所述红色子像素和所述绿色子像素分别由红色量子点材料和绿色量子点材料制作而成。\n\n[0014]进一步的，所述黑色矩阵的厚度范围为10微米至12微米。\n\n[0015]有益效果：本发明实施例提供的一种显示面板，在相邻的微型LED以及相邻的子像素之间，均设置有黑色矩阵做阻隔，所采用的高膜厚的黑色矩阵既可充当微型LED两侧的黑色矩阵，阻挡微型LED的侧面出光，防止不同微型LED之间的光发生串扰，又可充当像素层的像素限定层，限制子像素打印区域的同时形成子像素的形状，还可防止不同子像素之间发生串扰，既简化制程，又大大提高了显示面板的对比度。\n\n附图说明\n\n[0016]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0017]图1是本发明实施例提供的显示面板的结构示意图。\n\n[0018]图2是本发明实施例提供的显示面板的制备方法流程图。\n\n[0019]图3a～3e是本发明实施例提供的显示面板的制备方法工艺流程图。\n\n具体实施方式\n\n[0020]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0021]如图1所示，本发明实施例提供的显示面板的结构示意图，从图中可以很直观地看到本发明的各组成部分，以及各组成部分之间的相对位置关系，所述显示面板包括：第一玻璃基板101、薄膜晶体管层102、黑色矩阵103、第一颜色微型LED104、像素层105以及第二玻璃基板106；其中，所述薄膜晶体管层102位于所述第一玻璃基板101上；所述黑色矩阵103位于所述薄膜晶体管层102上、且阵列排布；所述第一颜色微型LED104位于所述薄膜晶体管层102上、且位于所述黑色矩阵103之间，所述第一颜色微型LED104的高度小于所述黑色矩阵103的高度；所述像素层105位于所述第一颜色微型LED104上，包括第二颜色子像素1051和第三颜色子像素1052；所述第二玻璃基板106位于所述黑色矩阵103和所述像素层105上。\n\n[0022]需要说明的是，本实施例中，所述第一颜色微型LED104作为背光源，所述像素层105作为彩色滤光层，所述第一颜色微型LED104与所述第二颜色子像素1051和所述第三颜色子像素1052组合可以实现全彩显示。\n\n[0023]需要说明的是，本实施例通过将黑色矩阵103设置在薄膜晶体管层102上，将第一颜色微型LED104设置在黑色矩阵103之间，可以避免现有技术中，先形成微型LED后形成黑色矩阵，导致黄光制程中的高温以及碱性显影液对微型LED造成影响，导致微型LED失效，从而影响显示面板整体显示效果；且本实施例通过将黑色矩阵103的高度设置为大于第一颜色微型LED104的高度，将像素层105设置于第一颜色微型LED104上，即所述黑色矩阵103既可充当第一颜色微型LED104两侧的黑色矩阵，阻挡第一颜色微型LED104的侧面出光，防止不同微型LED之间的光发生串扰，又可充当像素层105的像素限定层，限制子像素打印区域的同时形成子像素的形状，还可防止不同子像素之间发生串扰，可以简化制程。\n\n[0024]在一种实施例中，所述第一颜色微型LED104为蓝色微型LED，所述第二颜色子像素1051和所述第三颜色子像素1052分别为红色子像素和绿色子像素。本实施例是以蓝色微型LED激发红、绿子像素来获得彩色显示效果，在其他实施例中，所述第一颜色微型LED104还可为红色微型LED或者绿色微型LED，相对应的，所述第二颜色子像素1051和所述第三颜色子像素1052分别为绿色子像素和蓝色子像素、或者所述第二颜色子像素1051和所述第三颜色子像素1052分别为红色子像素和蓝色子像素。\n\n[0025]在一种实施例中，所述红色子像素和所述绿色子像素组成一个重复单元，所述重复单元以一个子像素的宽度为间距循环排布，即所述间隔区域107为空白区域或填充有透明材料，其中，缺失的蓝色子像素(即图中的间隔区域107)由蓝色微型LED提供。\n\n[0026]在一种实施例中，所述红色子像素和所述绿色子像素分别由红色量子点材料和绿色量子点材料制作而成。量子点技术被认为是能够与OLED相抗衡的下一代显示技术的核心，量子点材料具有高发光效率、高色纯度、广色域等优点。将量子点材料用作彩色滤光层，能够为显示面板提供更加逼真的色彩显示。本发明实施例集合了微型LED与量子点的优势，可使得显示面板具有低功耗、高性能、长寿命等优点。\n\n[0027]在一种实施例中，所述黑色矩阵103的厚度范围为10微米至12微米，本实施例通过采用高膜厚的黑色矩阵，同时充当微型LED的阻隔层以及像素层的界定层，简化制程的同时，还避免了现有技术中，先形成微型LED后形成黑色矩阵，导致黄光制程中的高温以及碱性显影液对微型LED造成影响，导致微型LED失效，从而影响显示面板整体显示效果。\n\n[0028]在一种实施例中，所述像素层105的厚度范围为5微米至7微米。具体地，一般的微型LED芯片的高度范围为5微米至6微米左右，本发明实施例提供的黑色矩阵的高度可达到10微米至12微米，因此，本发明实施例的像素层105的高度范围可达到5微米至7微米，若像素层105为量子点材料打印而成，这个高度范围下的量子点材料的色纯度、色饱和度等指标均能够满足正常显示需求。\n\n[0029]如图2所示，本发明实施例提供的显示面板的制备方法流程图，包括步骤：\n\n[0030]S201、在第一玻璃基板上制备薄膜晶体管层；\n\n[0031]S202、在所述薄膜晶体管层上制备黑色矩阵，所述黑色矩阵阵列排布；\n\n[0032]S203、在所述薄膜晶体管层上制备第一颜色微型LED，所述第一颜色微型LED位于所述黑色矩阵之间，且所述第一颜色微型LED的高度小于所述黑色矩阵的高度；\n\n[0033]S204、在所述第一颜色微型LED上制备像素层，所述像素层包括第二颜色子像素和第三颜色子像素；\n\n[0034]S205、在所述黑色矩阵和所述像素层上封装第二玻璃基板。\n\n[0035]具体地，在S201中，在洁净干燥的第一玻璃基板上制备的薄膜晶体管层，是作为第一颜色微型LED芯片的驱动；在S202中，使用黄光制程制备黑色矩阵，其中制备黑色矩阵的步骤包括：光阻的涂布、预烘烤、曝光、显影和后烘；在S203中，在制作完黑色矩阵的基板上制备的第一颜色微型LED芯片，是作为像素层的激发光源；在S204中，使用喷墨打印技术打印的第二颜色子像素和第三颜色子像素，是作为彩膜层中的第二颜色子像素和第三颜色子像素(其中第一颜色子像素由第一颜色微型LED芯片提供)；在S205中，在最上层用第二玻璃基板进行封装，得到最终的显示面板。\n\n[0036]需要说明的是，制作这种以微型LED作为背光源、以像素层作为彩色滤光层的结构有对侧、同侧两种方案。对侧就是分别制作微型LED背光基板和像素层彩膜基板后将两者进行对位，此方案制程繁琐，且需要高精度对位设备的支持，资源有限。同侧方案即在微型LED上制作彩色滤光层，本发明实施例通过先制备黄光制程的黑色矩阵，再转移微型LED芯片，由此避免了黄光制程对微型LED芯片的伤害，并简化了制程，无需对位操作，降低了制作难度。\n\n[0037]在一种实施例中，所述第一颜色微型LED为蓝色微型LED，所述第二颜色子像素和所述第三颜色子像素分别为红色子像素和绿色子像素。本实施例是以蓝色微型LED激发红、绿子像素来获得彩色显示效果，在其他实施例中，所述第一颜色微型LED还可为红色微型LED或者绿色微型LED，相对应的，所述第二颜色子像素和所述第三颜色子像素分别为绿色子像素和蓝色子像素、或者所述第二颜色子像素和所述第三颜色子像素分别为红色子像素和蓝色子像素。\n\n[0038]在一种实施例中，所述红色子像素和所述绿色子像素组成一个重复单元，所述重复单元以一个子像素的宽度为间距循环排布，即所述间隔区域为空白区域或填充有透明材料，其中，缺失的蓝色子像素由蓝色微型LED提供。\n\n[0039]在一种实施例中，所述红色子像素和所述绿色子像素分别由红色量子点材料和绿色量子点材料制作而成。\n\n[0040]在一种实施例中，所述黑色矩阵的厚度范围为10微米至12微米。\n\n[0041]在一种实施例中，所述像素层105的厚度范围为5微米至7微米。具体地，一般的微型LED芯片的高度范围为5微米至6微米左右，本发明实施例提供的黑色矩阵的高度可达到10微米至12微米，因此，本发明实施例的像素层105的高度范围可达到5微米至7微米，若像素层105为量子点材料打印而成，这个高度范围下的量子点材料的色纯度、色饱和度等指标均能够满足正常显示需求。\n\n[0042]如图3a～3e所示，本发明实施例提供的显示面板的制备方法工艺流程图，首先在第一玻璃基板301上制备薄膜晶体管层302，所述薄膜晶体管层302例如包括缓冲层(图中未示出)、位于所述缓冲层上的半导体层(图中未示出)、位于所述半导体层上的栅绝缘层(图中未示出)、位于所述栅绝缘层上的栅极(图中未示出)、位于所述栅极上的层间绝缘层(图中未示出)、以及位于所述层间绝缘层上的源极(图中未示出)和漏极(图中未示出)，所述源极和所述漏极分别通过第一孔和第二孔与所述半导体层的两端相连；然后在所述薄膜晶体管层302上制备黑色矩阵303，所述黑色矩阵303的高度可达到10微米至12微米的范围；接下来在所述薄膜晶体管层302上制备第一颜色微型LED304，且所述第一颜色微型LED304位于所述黑色矩阵303之间，所述第一颜色微型LED304的高度小于所述黑色矩阵303的高度，本实施例先制备黑色矩阵303再制备第一颜色微型LED304，可避免制备黑色矩阵303的黄光制程中高温以及碱性显影液对微型LED造成的影响；再然后在所述第一颜色微型LED304上制备像素层305，所述像素层305包括第二颜色子像素3051和第三颜色子像素3052，所述第一颜色微型LED304与所述第二颜色子像素3051和所述第三颜色子像素3052组合可实现全彩显示；最后在所述黑色矩阵303和所述像素层305上封装第二玻璃基板306，制得所述显示面板。\n\n[0043]需要说明的是，制备黑色矩阵303的步骤包括：光阻的涂布、预烘烤、曝光、显影和后烘。本实施例先制备黑色矩阵303再制备第一颜色微型LED304，可避免制备黑色矩阵303的黄光制程中高温以及碱性显影液对微型LED造成的影响。且本发明实施例通过采用的高膜厚的黑色矩阵既可充当微型LED两侧的黑色矩阵，阻挡微型LED的侧面出光，防止不同微型LED之间的光发生串扰，又可充当像素层的像素限定层，限制子像素打印区域的同时形成子像素的形状，还可防止不同子像素之间发生串扰。\n\n[0044]在一种实施例中，所述第一颜色微型LED304为蓝色微型LED，所述第二颜色子像素3051和所述第三颜色子像素3052分别为红色子像素和绿色子像素。本实施例是以蓝色微型LED激发红、绿子像素来获得彩色显示效果，在其他实施例中，所述第一颜色微型LED304还可为红色微型LED或者绿色微型LED，相对应的，所述第二颜色子像素3051和所述第三颜色子像素3052分别为绿色子像素和蓝色子像素、或者所述第二颜色子像素3051和所述第三颜色子像素3052分别为红色子像素和蓝色子像素。\n\n[0045]在一种实施例中，所述红色子像素和所述绿色子像素组成一个重复单元，所述重复单元以一个子像素的宽度为间距循环排布，即所述间隔区域307为空白区域或填充有透明材料，其中，缺失的蓝色子像素(即图中的间隔区域307)由蓝色微型LED提供。\n\n[0046]在一种实施例中，所述红色子像素和所述绿色子像素分别由红色量子点材料和绿色量子点材料制作而成。\n\n[0047]本发明实施例提供一种显示装置，包括驱动芯片和上述的显示面板。本发明实施例提供的显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相机、导航仪等任何具有显示功能的产品或部件。\n\n[0048]综上所述，本发明实施例提供的一种显示面板，通过在相邻的微型LED以及相邻的子像素之间，均设置有黑色矩阵做阻隔，所采用的高膜厚的黑色矩阵既可充当微型LED两侧的黑色矩阵，阻挡微型LED的侧面出光，防止不同微型LED之间的光发生串扰，又可充当像素层的像素限定层，限制子像素打印区域的同时形成子像素的形状，还可防止不同子像素之间发生串扰，既简化制程，又大大提高了显示面板的对比度，解决了现有技术的显示面板，由于在微型LED上制作黑色矩阵，其黄光制程中的高温以及碱性显影液对微型LED造成影响，导致微型LED失效，从而影响显示面板整体显示效果的技术问题。\n\n[0049]以上对本发明实施例所提供的一种显示面板及其制备方法进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。');
INSERT INTO `os_patent_instruction_text` VALUES (10761, 23815, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种大尺寸的MiniLED发光的显示面板及显示装置。\n\n背景技术\n\n[0002]MiniLED技术目前广泛的应用在超大尺寸(>100英寸)的显示器中，所采用的主流技术是采用PCB基板作为基底的小间距LED技术。目前MiniLED显示屏的像素间间距在10mm到1mm之间。基于PCB基板的技术方案是将负责驱动的金属氧化物半导体场效应(MOS)晶体管和LED灯封装在一起，然后转移并固定在PCB基板上。该技术方案面临两个方面的问题：(1)MOS晶体管和LED灯封装的尺寸较大，难以实现像素间距小于0.5mm的显示屏；(2)PCB板和MOS晶体管的成本较高。\n\n[0003]目前都在开发采用薄膜晶体管(TFT)基板驱动MiniLED的技术方案。与PCB基板和MOS管的技术方案相比，采用TFT基板能够省去MOS晶体管的器件成本。现有面板厂的TFT基板生产尺寸较大，相较于PCB基板来说，单位面积的成本也较低。由于不需要将MOS管与LED灯封装在一起，器件的尺寸也可以缩小，在实现更小的像素间距方面也有优势。因此，采用TFT基板驱动MiniLED的拼接屏技术具有更大的优点。\n\n[0004]目前，主流的TFT技术包括氢化非晶硅TFT技术(a-Si:H TFT)、非晶氧化物(amorphous oxide)TFT技术和低温多晶体TFT技术。氢化非晶硅TFT的载流子迁移率较低，难以满足MiniLED驱动的要求。与氧化物TFT技术相比，低温多晶硅TFT技术的制作工艺复杂且世代线较低，成本较高。因此，现开发采用氧化物TFT驱动的MiniLED拼接屏是现主流。但是，氧化物材料容易吸附环境中水氧导致器件的电性发生负偏。因此，需要对MiniLED显示屏进行封装，减少环境中的水氧的影响。目前，MiniLED显示屏仅在LED灯固晶后涂布封胶，封胶的成分为硅胶。硅胶对水氧的阻隔能力较差，难以满足氧化物TFT的封装要求。\n\n发明内容\n\n[0005]本发明的目的在于，提出一种显示面板及显示装置，可以解决大尺寸的MiniLED发光的显示面板封装效果差的问题。\n\n[0006]为了达到上述目的，本发明提供一种显示面板，包括：基板；驱动层，设于所述基板的一侧，所述驱动层包括多个氧化物薄膜晶体管；多个MiniLED发光单元，阵列式分布于所述驱动层远离所述基板的一侧，每个氧化物薄膜晶体管对应连接对应的MiniLED发光单元；第一封装胶，贴附于所述驱动层上且包覆所述MiniLED发光单元；薄膜封装层，设于所述第一封装胶远离所述驱动层的一侧。\n\n[0007]进一步地，所述薄膜封装层包括至少一混合层，所述混合层包括有机层以及无机层，所述无机层设于所述有机层上。\n\n[0008]进一步地，所述氧化物薄膜晶体管的材料为铟镓锌氧化物。\n\n[0009]进一步地，还包括一扇出走线、以及绑定区，所述扇出走线连接至所述绑定区，所述扇出走线设于所述显示面板的侧面。\n\n[0010]进一步地，还包括：第二封装胶，贴附于所述第一封装胶的左右两侧。\n\n[0011]进一步地，所述第一封装胶的材料包括黑胶或UV固化胶。\n\n[0012]进一步地，所述第二封装胶的材料包括黑胶或UV固化胶。\n\n[0013]进一步地，所述有机层的材料为聚酰亚胺；所述无机层的材料为硅系化合物。\n\n[0014]进一步地，所述第二封装胶贴附部分所述扇出走线。\n\n[0015]本发明还提供一种显示装置，包前文所述的显示面板。\n\n[0016]本发明的有益效果是：本发明提供了一种显示面板，该显示面板为大尺寸的MiniLED发光，通过设置一薄膜封装层，该薄膜封装层由有机层以及无机层堆叠而成。通过薄膜封装层的隔绝水氧的能力，可以有效的弥补硅胶材料的封装胶的缺陷，提高面板的稳定性。\n\n附图说明\n\n[0017]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0018]图1为本发明提供的显示面板的结构示意图。\n\n[0019]图2为本发明显示面板的边缘结构示意图。\n\n[0020]显示面板100；\n\n[0021]基板101；驱动层102；MiniLED发光单元103；\n\n[0022]第一封装胶104；薄膜封装层105；扇出走线106；\n\n[0023]绑定区107；有机层1051；无机层1052。\n\n具体实施方式\n\n[0024]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0025]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0026]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0027]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0028]下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0029]如图1以及如图2所示，提供一种显示面板100，包括：基板101、驱动层102、MiniLED发光单元103、第一封装胶104以及薄膜封装层105。\n\n[0030]所述基板101具有柔性特性，其材料为聚酰亚胺材料。\n\n[0031]所述驱动层102设于所述基板101的一侧，所述驱动层102包括多个氧化物薄膜晶体管。\n\n[0032]所述MiniLED发光单元103阵列式分布于所述驱动层102远离所述基板101的一侧，每个氧化物薄膜晶体管连接对应的MiniLED发光单元103。\n\n[0033]MiniLED发光单元103包括红色发光单元、蓝色发光单元以及绿色发光单元。\n\n[0034]氧化物薄膜晶体管用以驱动MiniLED发光单元103。所述氧化物薄膜晶体管的材料为铟镓锌氧化物。\n\n[0035]所述第一封装胶104贴附于所述驱动层102上且包覆所述MiniLED发光单元103。用以封装MiniLED发光单元103。所述第一封装胶104用以隔绝外界的水氧，减小器件的老化程度。\n\n[0036]所述薄膜封装层105设于所述第一封装胶104远离所述驱动层102的一侧。所述薄膜封装层105进一步隔绝水氧，可以弥补第一封装胶104的缺陷，提高面板隔绝水氧的能力。\n\n[0037]所述薄膜封装层105包括至少一混合层，所述混合层包括有机层1051以及无机层1052，所述无机层1052设于所述有机层1051上。\n\n[0038]显示面板100还包括一扇出走线106、以及绑定区107，所述扇出走线106连接至所述绑定区107，所述扇出走线106设于所述显示面板100的侧面。\n\n[0039]由于MiniLED发光单元的厚度超过100um，薄膜封装层105并未完全包覆所述第一封装胶104的左右两侧，因此在一实施例中，面板还包括第二封装胶，贴附于所述第一封装胶104的左右两侧。可以进一步的保护封装胶的左右两侧。所述第二封装胶贴附于部分所述扇出走线106上。\n\n[0040]所述第一封装胶104的材料包括黑胶或UV固化胶。所述第二封装胶的材料包括黑胶或UV固化胶。\n\n[0041]所述有机层1051的材料为聚酰亚胺；所述无机层1052的材料为硅系化合物。\n\n[0042]本发明提供了一种显示面板100，该显示面板100为大尺寸的MiniLED发光单元，通过设置一薄膜封装层105，该薄膜封装层105由有机层1051以及无机层1052堆叠而成。通过薄膜封装层105的隔绝水氧的能力，可以有效的弥补硅胶材料的封装胶的缺陷，提高面板的稳定性。\n\n[0043]另外由于MiniLED灯的厚度超过100um，薄膜封装层105并未完全包覆所述第一封装胶104的左右两侧，通过第二封装胶贴附所述第一封装胶104的左右两侧。可以进一步的保护封装胶的左右两侧。\n\n[0044]本发明提供一种显示装置，包括所述的显示面板100。\n\n[0045]所述显示面板100包括：基板101、驱动层102、MiniLED发光单元103、第一封装胶104以及薄膜封装层105。\n\n[0046]所述基板101具有柔性特性，其材料为聚酰亚胺材料。\n\n[0047]所述驱动层102设于所述基板101的一侧，所述驱动层102包括多个氧化物薄膜晶体管。\n\n[0048]所述MiniLED发光单元103阵列式分布于所述驱动层102远离所述基板101的一侧，每个氧化物薄膜晶体管对应连接每一MiniLED发光单元103。\n\n[0049]氧化物薄膜晶体管用以驱动MiniLED发光单元103。所述氧化物薄膜晶体管的材料为铟镓锌氧化物。\n\n[0050]所述第一封装胶104贴附于所述驱动层102上且包覆所述MiniLED发光单元103。用以封装MiniLED发光单元103。所述第一封装胶104用以隔绝外界的水氧，减小器件的老化程度。\n\n[0051]所述薄膜封装层105设于所述第一封装胶104远离所述驱动层102的一侧。所述薄膜封装层105进一步隔绝水氧，可以弥补第一封装胶104的缺陷，提高面板隔绝水氧的能力。\n\n[0052]所述薄膜封装层105包括至少一混合层，所述混合层包括有机层1051以及无机层1052，所述无机层1052设于所述有机层1051上。\n\n[0053]显示面板100还包括一扇出走线106、以及绑定区107，设于边缘的非显示区。所述扇出走线106连接所述绑定区107，所述扇出走线106设于所述显示面板100的侧面。\n\n[0054]由于MiniLED灯的厚度超过100um，薄膜封装层105并未完全包覆所述第一封装胶104的左右两侧，因此在一实施例中，面板还包括第二封装胶，贴附所述第一封装胶104的左右两侧。可以进一步的保护封装胶的左右两侧。所述第二封装胶贴附部分所述扇出走线106。\n\n[0055]所述第一封装胶104的材料包括黑胶或UV固化胶。所述第二封装胶的材料包括黑胶或UV固化胶。\n\n[0056]所述有机层1051的材料为聚酰亚胺；所述无机层1052的材料为硅系化合物。\n\n[0057]本发明提供了一种显示面板100，该显示面板100为大尺寸的MiniLED发光，通过设置一薄膜封装层105，该薄膜封装层105由有机层1051以及无机层1052堆叠而成。通过薄膜封装层105的隔绝水氧的能力，可以有效的弥补硅胶材料的封装胶的缺陷，提高面板的稳定性。\n\n[0058]另外由于MiniLED灯的厚度超过100um，薄膜封装层105并未完全包覆所述第一封装胶104的左右两侧，通过第二封装胶贴附所述第一封装胶104的左右两侧。可以进一步的保护封装胶的左右两侧。\n\n[0059]本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种大尺寸的MiniLED发光的显示面板及显示装置。\n\n背景技术\n\n[0002]MiniLED技术目前广泛的应用在超大尺寸(>100英寸)的显示器中，所采用的主流技术是采用PCB基板作为基底的小间距LED技术。目前MiniLED显示屏的像素间间距在10mm到1mm之间。基于PCB基板的技术方案是将负责驱动的金属氧化物半导体场效应(MOS)晶体管和LED灯封装在一起，然后转移并固定在PCB基板上。该技术方案面临两个方面的问题：(1)MOS晶体管和LED灯封装的尺寸较大，难以实现像素间距小于0.5mm的显示屏；(2)PCB板和MOS晶体管的成本较高。\n\n[0003]目前都在开发采用薄膜晶体管(TFT)基板驱动MiniLED的技术方案。与PCB基板和MOS管的技术方案相比，采用TFT基板能够省去MOS晶体管的器件成本。现有面板厂的TFT基板生产尺寸较大，相较于PCB基板来说，单位面积的成本也较低。由于不需要将MOS管与LED灯封装在一起，器件的尺寸也可以缩小，在实现更小的像素间距方面也有优势。因此，采用TFT基板驱动MiniLED的拼接屏技术具有更大的优点。\n\n[0004]目前，主流的TFT技术包括氢化非晶硅TFT技术(a-Si:H TFT)、非晶氧化物(amorphous oxide)TFT技术和低温多晶体TFT技术。氢化非晶硅TFT的载流子迁移率较低，难以满足MiniLED驱动的要求。与氧化物TFT技术相比，低温多晶硅TFT技术的制作工艺复杂且世代线较低，成本较高。因此，现开发采用氧化物TFT驱动的MiniLED拼接屏是现主流。但是，氧化物材料容易吸附环境中水氧导致器件的电性发生负偏。因此，需要对MiniLED显示屏进行封装，减少环境中的水氧的影响。目前，MiniLED显示屏仅在LED灯固晶后涂布封胶，封胶的成分为硅胶。硅胶对水氧的阻隔能力较差，难以满足氧化物TFT的封装要求。\n\n发明内容\n\n[0005]本发明的目的在于，提出一种显示面板及显示装置，可以解决大尺寸的MiniLED发光的显示面板封装效果差的问题。\n\n[0006]为了达到上述目的，本发明提供一种显示面板，包括：基板；驱动层，设于所述基板的一侧，所述驱动层包括多个氧化物薄膜晶体管；多个MiniLED发光单元，阵列式分布于所述驱动层远离所述基板的一侧，每个氧化物薄膜晶体管对应连接对应的MiniLED发光单元；第一封装胶，贴附于所述驱动层上且包覆所述MiniLED发光单元；薄膜封装层，设于所述第一封装胶远离所述驱动层的一侧。\n\n[0007]进一步地，所述薄膜封装层包括至少一混合层，所述混合层包括有机层以及无机层，所述无机层设于所述有机层上。\n\n[0008]进一步地，所述氧化物薄膜晶体管的材料为铟镓锌氧化物。\n\n[0009]进一步地，还包括一扇出走线、以及绑定区，所述扇出走线连接至所述绑定区，所述扇出走线设于所述显示面板的侧面。\n\n[0010]进一步地，还包括：第二封装胶，贴附于所述第一封装胶的左右两侧。\n\n[0011]进一步地，所述第一封装胶的材料包括黑胶或UV固化胶。\n\n[0012]进一步地，所述第二封装胶的材料包括黑胶或UV固化胶。\n\n[0013]进一步地，所述有机层的材料为聚酰亚胺；所述无机层的材料为硅系化合物。\n\n[0014]进一步地，所述第二封装胶贴附部分所述扇出走线。\n\n[0015]本发明还提供一种显示装置，包前文所述的显示面板。\n\n[0016]本发明的有益效果是：本发明提供了一种显示面板，该显示面板为大尺寸的MiniLED发光，通过设置一薄膜封装层，该薄膜封装层由有机层以及无机层堆叠而成。通过薄膜封装层的隔绝水氧的能力，可以有效的弥补硅胶材料的封装胶的缺陷，提高面板的稳定性。\n\n附图说明\n\n[0017]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0018]图1为本发明提供的显示面板的结构示意图。\n\n[0019]图2为本发明显示面板的边缘结构示意图。\n\n[0020]显示面板100；\n\n[0021]基板101；驱动层102；MiniLED发光单元103；\n\n[0022]第一封装胶104；薄膜封装层105；扇出走线106；\n\n[0023]绑定区107；有机层1051；无机层1052。\n\n具体实施方式\n\n[0024]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0025]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0026]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0027]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0028]下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0029]如图1以及如图2所示，提供一种显示面板100，包括：基板101、驱动层102、MiniLED发光单元103、第一封装胶104以及薄膜封装层105。\n\n[0030]所述基板101具有柔性特性，其材料为聚酰亚胺材料。\n\n[0031]所述驱动层102设于所述基板101的一侧，所述驱动层102包括多个氧化物薄膜晶体管。\n\n[0032]所述MiniLED发光单元103阵列式分布于所述驱动层102远离所述基板101的一侧，每个氧化物薄膜晶体管连接对应的MiniLED发光单元103。\n\n[0033]MiniLED发光单元103包括红色发光单元、蓝色发光单元以及绿色发光单元。\n\n[0034]氧化物薄膜晶体管用以驱动MiniLED发光单元103。所述氧化物薄膜晶体管的材料为铟镓锌氧化物。\n\n[0035]所述第一封装胶104贴附于所述驱动层102上且包覆所述MiniLED发光单元103。用以封装MiniLED发光单元103。所述第一封装胶104用以隔绝外界的水氧，减小器件的老化程度。\n\n[0036]所述薄膜封装层105设于所述第一封装胶104远离所述驱动层102的一侧。所述薄膜封装层105进一步隔绝水氧，可以弥补第一封装胶104的缺陷，提高面板隔绝水氧的能力。\n\n[0037]所述薄膜封装层105包括至少一混合层，所述混合层包括有机层1051以及无机层1052，所述无机层1052设于所述有机层1051上。\n\n[0038]显示面板100还包括一扇出走线106、以及绑定区107，所述扇出走线106连接至所述绑定区107，所述扇出走线106设于所述显示面板100的侧面。\n\n[0039]由于MiniLED发光单元的厚度超过100um，薄膜封装层105并未完全包覆所述第一封装胶104的左右两侧，因此在一实施例中，面板还包括第二封装胶，贴附于所述第一封装胶104的左右两侧。可以进一步的保护封装胶的左右两侧。所述第二封装胶贴附于部分所述扇出走线106上。\n\n[0040]所述第一封装胶104的材料包括黑胶或UV固化胶。所述第二封装胶的材料包括黑胶或UV固化胶。\n\n[0041]所述有机层1051的材料为聚酰亚胺；所述无机层1052的材料为硅系化合物。\n\n[0042]本发明提供了一种显示面板100，该显示面板100为大尺寸的MiniLED发光单元，通过设置一薄膜封装层105，该薄膜封装层105由有机层1051以及无机层1052堆叠而成。通过薄膜封装层105的隔绝水氧的能力，可以有效的弥补硅胶材料的封装胶的缺陷，提高面板的稳定性。\n\n[0043]另外由于MiniLED灯的厚度超过100um，薄膜封装层105并未完全包覆所述第一封装胶104的左右两侧，通过第二封装胶贴附所述第一封装胶104的左右两侧。可以进一步的保护封装胶的左右两侧。\n\n[0044]本发明提供一种显示装置，包括所述的显示面板100。\n\n[0045]所述显示面板100包括：基板101、驱动层102、MiniLED发光单元103、第一封装胶104以及薄膜封装层105。\n\n[0046]所述基板101具有柔性特性，其材料为聚酰亚胺材料。\n\n[0047]所述驱动层102设于所述基板101的一侧，所述驱动层102包括多个氧化物薄膜晶体管。\n\n[0048]所述MiniLED发光单元103阵列式分布于所述驱动层102远离所述基板101的一侧，每个氧化物薄膜晶体管对应连接每一MiniLED发光单元103。\n\n[0049]氧化物薄膜晶体管用以驱动MiniLED发光单元103。所述氧化物薄膜晶体管的材料为铟镓锌氧化物。\n\n[0050]所述第一封装胶104贴附于所述驱动层102上且包覆所述MiniLED发光单元103。用以封装MiniLED发光单元103。所述第一封装胶104用以隔绝外界的水氧，减小器件的老化程度。\n\n[0051]所述薄膜封装层105设于所述第一封装胶104远离所述驱动层102的一侧。所述薄膜封装层105进一步隔绝水氧，可以弥补第一封装胶104的缺陷，提高面板隔绝水氧的能力。\n\n[0052]所述薄膜封装层105包括至少一混合层，所述混合层包括有机层1051以及无机层1052，所述无机层1052设于所述有机层1051上。\n\n[0053]显示面板100还包括一扇出走线106、以及绑定区107，设于边缘的非显示区。所述扇出走线106连接所述绑定区107，所述扇出走线106设于所述显示面板100的侧面。\n\n[0054]由于MiniLED灯的厚度超过100um，薄膜封装层105并未完全包覆所述第一封装胶104的左右两侧，因此在一实施例中，面板还包括第二封装胶，贴附所述第一封装胶104的左右两侧。可以进一步的保护封装胶的左右两侧。所述第二封装胶贴附部分所述扇出走线106。\n\n[0055]所述第一封装胶104的材料包括黑胶或UV固化胶。所述第二封装胶的材料包括黑胶或UV固化胶。\n\n[0056]所述有机层1051的材料为聚酰亚胺；所述无机层1052的材料为硅系化合物。\n\n[0057]本发明提供了一种显示面板100，该显示面板100为大尺寸的MiniLED发光，通过设置一薄膜封装层105，该薄膜封装层105由有机层1051以及无机层1052堆叠而成。通过薄膜封装层105的隔绝水氧的能力，可以有效的弥补硅胶材料的封装胶的缺陷，提高面板的稳定性。\n\n[0058]另外由于MiniLED灯的厚度超过100um，薄膜封装层105并未完全包覆所述第一封装胶104的左右两侧，通过第二封装胶贴附所述第一封装胶104的左右两侧。可以进一步的保护封装胶的左右两侧。\n\n[0059]本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10762, 23816, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种微型发光二极管显示面板及微型发光二极管的转印方法。\n\n背景技术\n\n[0002]微型发光二极管显示器(Micro LED)的耗电量仅为LCD显示器的十分之一，其与OLED显示器一样属于自发光，能将像素之间的距离从毫米等级降至微米等级，色彩饱和度接近OLED。Micro LED系统的体积和重量可以再缩小，兼具低功耗、快速反应的特质，最重要的是没有OLED的色衰缺点。由于Micro LED具有上述优点，使其成为最近面板行业研究的热点。\n\n[0003]按照现有技术，在制造全彩色Micro LED显示器件过程中，需要逐个拾取红、绿、蓝(RGB)三种像素的微型发光二极管(LED芯片)，并把它们分别放置到目标基板对应的电极上，通过引线键合、或者倒装焊的方式实现微型发光二极管与基板的电气连接，进而形成全彩色显示器件，这个拾取和放置转移的过程称为微型发光二极管的转印。这个过程中需要多次拾起并放下微型发光二极管，大大降低了生产显示器件的效率，使Micro LED显示器件的成本升高。另外，微型发光二极管转移至目标基板上后，会存在漏光，导致混色的问题。\n\n[0004]因此，现有技术存在缺陷，急需解决。\n\n发明内容\n\n[0005]本申请提供一种微型发光二极管显示面板及微型发光二极管的转印方法，能够解决采用现有转印方法制备的微型发光二极管显示面板产生漏光，从而导致混色的问题。\n\n[0006]为解决上述问题，本申请提供的技术方案如下：\n\n[0007]本申请提供一种微型发光二极管显示面板，包括：\n\n[0008]驱动基板，所述驱动基板包括薄膜晶体管阵列层以及位于所述薄膜晶体管阵列层上阵列分布的底部电极；\n\n[0009]微型发光二极管带，间隔的设置于所述驱动基板上，每个微型发光二极管带上包括至少两个微型发光二极管；\n\n[0010]所述微型发光二极管与所述底部电极一一对应电连接，且所述微型发光二极管通过所述底部电极与所述薄膜晶体管阵列层中的薄膜晶体管电连接；\n\n[0011]其中，相邻两行所述底部电极之间和/或相邻两列所述底部电极之间设置有遮光层，所述微型发光二极管带或所述微型发光二极管位于相邻两所述遮光层之间。\n\n[0012]在本申请的微型发光二极管显示面板中，所述微型发光二极管在所述微型发光二极管带上以一维阵列的形式排布，所述微型发光二极管带在相邻两所述微型发光二极管之间设置有凹槽。\n\n[0013]在本申请的微型发光二极管显示面板中，同一所述微型发光二极管带上的所述微型发光二极管的颜色相同，相邻两行或相邻两列所述底部电极之间设置有所述遮光层，所述微型发光二极管带位于相邻两所述遮光层之间，且同一行或同一列所述底部电极对应的所述微型发光二极管的颜色相同。\n\n[0014]在本申请的微型发光二极管显示面板中，所述凹槽内设置有绝缘填充物。\n\n[0015]在本申请的微型发光二极管显示面板中，同一所述微型发光二极管带上的所述微型发光二极管的颜色不同，相邻两行所述底部电极之间设置有第一遮光层，相邻两列所述底部电极之间设置有第二遮光层，所述第一遮光层与所述第二遮光层交叉设置，所述微型发光二极管位于相邻两所述第一遮光层和/或相邻两所述第二遮光层之间。\n\n[0016]在本申请的微型发光二极管显示面板中，所述第一遮光层或所述第二遮光层对应填充至所述微型发光二极管带的所述凹槽中。\n\n[0017]在本申请的微型发光二极管显示面板中，所述微型发光二极管包括依次层叠设置的N型电极、N型半导体、发光层、P型半导体、P型电极，其中，所述微型发光二极管的所述N型电极通过焊料与所述底部电极电连接，所述凹槽贯穿所述N型半导体、所述发光层、所述P型半导体。\n\n[0018]在本申请的微型发光二极管显示面板中，所述微型发光二极管带上的至少两所述微型发光二极管共用一所述P型电极，每个所述微型发光二极管对应一个所述N型电极。\n\n[0019]本申请还提供一种微型发光二极管的转印方法，所述转印方法包括以下步骤：\n\n[0020]步骤S10，微型发光二极管阵列包括多个呈阵列排布的微型发光二极管；\n\n[0021]步骤S20，将所述微型发光二极管阵列以行或列的形式切割成多个条状的微型发光二极管带，每个微型发光二极管带上包括至少两个微型发光二极管；\n\n[0022]步骤S30，所述微型发光二极管包括绑定端，采用粘合剂与所述微型发光二极管带背离所述绑定端的一侧粘接，然后将临时载体与所述粘合剂粘接；\n\n[0023]步骤S40，提供一驱动基板，所述驱动基板包括薄膜晶体管阵列层以及位于所述薄膜晶体管阵列层上阵列分布的底部电极，相邻两行所述底部电极之间和/或相邻两列所述底部电极之间设置有遮光层；\n\n[0024]步骤S50，在所述微型发光二极管带中的每个微型发光二极管的绑定端填涂焊料，将所述微型发光二极管带与所述驱动基板绑定，所述微型发光二极管带或所述微型发光二极管位于相邻两所述遮光层之间，所述微型发光二极管的绑定端通过所述底部电极与所述薄膜晶体管阵列层中的薄膜晶体管电连接；\n\n[0025]步骤S60，去除所述临时载体，去除所述粘合剂，完成所述微型发光二极管的转印。\n\n[0026]在本申请的转印方法中，在所述步骤S20之前，所述转印方法还包括以下步骤：\n\n[0027]步骤S101，在所述微型发光二极管阵列的行或列的方向上，在相邻两所述微型发光二极管之间开凹槽。\n\n[0028]在本申请的转印方法中，所述微型发光二极管包括依次层叠设置的N型电极、N型半导体、发光层、P型半导体、P型电极，其中，所述微型发光二极管的所述N型电极为所述绑定端，所述凹槽贯穿所述N型半导体、所述发光层、所述P型半导体。\n\n[0029]在本申请的转印方法中，所述微型发光二极管在所述微型发光二极管带上以一维阵列的形式排布；\n\n[0030]在所述步骤S20中，以所述微型发光二极管颜色相同的行或列为所述微型发光二极管带对所述微型发光二极管阵列进行切割；\n\n[0031]在所述步骤S40中，所述驱动基板上相邻两行所述底部电极之间或相邻两列所述底部电极之间设置有遮光层；\n\n[0032]在所述步骤S50中，所述微型发光二极管带与所述驱动基板绑定后，所述微型发光二极管带位于相邻两所述遮光层之间。\n\n[0033]在本申请的转印方法中，在所述步骤S101之后且在所述步骤S20之前，所述转印方法还包括以下步骤：\n\n[0034]步骤S102，在所述凹槽内填充绝缘填充物。\n\n[0035]在本申请的转印方法中，所述微型发光二极管在所述微型发光二极管带上以一维阵列的形式排布；\n\n[0036]在所述步骤S20中，以所述微型发光二极管颜色不同的行或列为所述微型发光二极管带对所述微型发光二极管阵列进行切割；\n\n[0037]在所述步骤S40中，所述驱动基板上相邻两行所述底部电极之间和相邻两列所述底部电极之间均设置有遮光层；\n\n[0038]在所述步骤S50中，所述微型发光二极管带与所述驱动基板绑定后，所述遮光层对应所述凹槽的部分填充至所述凹槽中，所述微型发光二极管位于相邻两所述遮光层之间。\n\n[0039]本申请的有益效果为：本申请提供的微型发光二极管显示面板及微型发光二极管的转印方法，通过在驱动基板的底部电极之间设置遮光层，从而使得微型发光二极管带在绑定至所述驱动基板上之后，不同颜色的微型发光二极管带之间通过遮光层隔开；或者微型发光二极管带上不同颜色的微型发光二极管之间通过遮光层隔开，从而解决现有微型发光二极管显示面板上不同颜色的微型发光二极管带之间或不同颜色的微型发光二极管之间会产生漏光，从而导致混色的技术问题。\n\n附图说明\n\n[0040]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0041]图1为本申请实施例一提供的微型发光二极管显示面板的截面图；\n\n[0042]图2为本申请提供的驱动基板的截面图；\n\n[0043]图3为本申请的微型发光二极管显示面板中微型发光二极管的转印方法流程图；\n\n[0044]图4为本申请实施例一提供的微型发光二极管显示面板的俯视图；\n\n[0045]图5为本申请实施例一的微型发光二极管显示面板中微型发光二极管的转印方法流程图；\n\n[0046]图6A～6H为本申请实施例一的微型发光二极管显示面板中微型发光二极管的转印流程示意图；\n\n[0047]图7为本申请实施例二提供的微型发光二极管显示面板的截面图；\n\n[0048]图8为本申请实施例二提供的微型发光二极管显示面板的俯视图；\n\n[0049]图9为本申请实施例二的微型发光二极管显示面板中微型发光二极管的转印方法流程图。\n\n具体实施方式\n\n[0050]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0051]在本申请的描述中，需要理解的是，术语“纵向”、“横向”、“长度”、“宽度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。在本申请中，“/”表示“或者”的意思。\n\n[0052]本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。\n\n[0053]本申请针对采用传统的微型发光二极管转印方法制备的微型发光二极管显示面板会产生漏光，从而导致混色的技术问题，本实施例能够解决该缺陷。\n\n[0054]结合图1和图7所示，本申请提供一种微型发光二极管显示面板，包括：驱动基板10，所述驱动基板10包括薄膜晶体管阵列层101以及位于所述薄膜晶体管阵列层101上阵列分布的底部电极102；微型发光二极管带20间隔的设置于所述驱动基板10上，每个微型发光二极管带20上包括至少两个微型发光二极管201；所述微型发光二极管201与所述底部电极102一一对应电连接，且所述微型发光二极管201通过所述底部电极102与所述薄膜晶体管阵列层101中的薄膜晶体管1010电连接。\n\n[0055]其中，相邻两行所述底部电极102之间和/或相邻两列所述底部电极102之间设置有遮光层103，所述微型发光二极管带20或所述微型发光二极管201位于相邻两所述遮光层103之间。\n\n[0056]请参照图2，为本申请提供的驱动基板的截面图。驱动基板10包括衬底基板100，位于所述衬底基板100上的薄膜晶体管阵列层101，位于所述薄膜晶体管阵列层101上的底部电极102以及遮光层103。\n\n[0057]所述薄膜晶体管阵列层101包括缓冲层1011、有源层1012、栅极绝缘层1013、栅极1014、介电层1015、源/漏极1016及阻隔层1017。在所述衬底基板100上形成所述缓冲层1011，并在所述缓冲层1011上形成图案化的有源层1012，对所述有源层1012的两端分别进行N离子掺杂及P离子掺杂，使得所述有源层1012形成沟道层及分设于所述沟道层两侧的第一掺杂区及第二掺杂区。在所述有源层1012上形成所述栅极绝缘层1013。在所述栅极绝缘层1013上形成所述栅极1014，所述栅极1014垂直方向的投影位于所述沟道层内。在所述栅极1014上形成所述介电层1015，自所述介电层1015向所述有源层1012延伸形成两个过孔。在所述介电层1015上形成所述源/漏极1016，并使所述源/漏极1016通过所述过孔分别与所述第一掺杂区及所述第二掺杂区电连接。在所述源/漏极1016上形成所述阻隔层1017。薄膜晶体管1010包括有源层1012、栅极1014及源/漏极1016，可以理解的是，根据实际需要，所述薄膜晶体管1010还可以为其它类型的薄膜晶体管，如普通TFT、HTPS-TFT等其它类型的薄膜晶体管。\n\n[0058]所述阻隔层1017上形成有阵列排布的底部电极102，所述底部电极102通过所述阻隔层1017上的过孔与所述源/漏极1016电连接。所述阻隔层1017上还设置有平坦层104，平坦层104图案化后形成像素孔1041。\n\n[0059]所述遮光层103设置于所述平坦层104上，所述遮光层103位于相邻两行所述底部电极102之间或相邻两列所述底部电极102之间；或者，所述遮光层103呈网格状，位于相邻两行所述底部电极102之间以及相邻两列所述底部电极102之间。所述遮光层103可以是黑色矩阵、黑色有机光阻、聚酰亚胺材料等具有遮光性能的材料。\n\n[0060]请参照图3所示，为本申请的微型发光二极管显示面板中微型发光二极管的转印方法流程图，所述转印方法包括以下步骤：\n\n[0061]步骤S10，微型发光二极管阵列包括多个呈阵列排布的微型发光二极管。\n\n[0062]步骤S20，将所述微型发光二极管阵列以行或列的形式切割成多个条状的微型发光二极管带，每个微型发光二极管带上包括至少两个微型发光二极管。\n\n[0063]步骤S30，所述微型发光二极管包括绑定端，采用粘合剂与所述微型发光二极管带背离所述绑定端的一侧粘接，然后将临时载体与所述粘合剂粘接。\n\n[0064]步骤S40，提供一驱动基板，所述驱动基板包括薄膜晶体管阵列层以及位于所述薄膜晶体管阵列层上阵列分布的底部电极，相邻两行所述底部电极之间和/或相邻两列所述底部电极之间设置有遮光层。\n\n[0065]步骤S50，在所述微型发光二极管带中的每个微型发光二极管的绑定端填涂焊料，将所述微型发光二极管带与所述驱动基板绑定，所述微型发光二极管带或所述微型发光二极管位于相邻两所述遮光层之间，所述微型发光二极管的绑定端通过所述底部电极与所述薄膜晶体管阵列层中的薄膜晶体管电连接。\n\n[0066]步骤S60，去除所述临时载体，去除所述粘合剂，完成所述微型发光二极管的转印。\n\n[0067]本申请提供的微型发光二极管显示面板及微型发光二极管的转印方法，通过在驱动基板的底部电极之间设置遮光层，从而使得微型发光二极管带在绑定至所述驱动基板上之后，不同颜色的微型发光二极管带之间通过遮光层隔开；或者微型发光二极管带上不同颜色的微型发光二极管之间通过遮光层隔开，从而解决现有微型发光二极管显示面板上不同颜色的微型发光二极管带之间或不同颜色的微型发光二极管之间会产生漏光，从而导致混色的技术问题。\n\n[0068]以下请结合具体实施例对本申请的微型发光二极管显示面板及微型发光二极管的转印方法进行详细描述。\n\n[0069]实施例一\n\n[0070]请参照图1和图4，图1为本申请实施例一提供的微型发光二极管显示面板的截面图；图4为本申请实施例一提供的微型发光二极管显示面板的俯视图。所述微型发光二极管显示面板包括驱动基板10和微型发光二极管带20。所述驱动基板10包括薄膜晶体管阵列层101、底部电极102及遮光层103。在本实施例中，所述遮光层103位于相邻两行所述底部电极102之间或相邻两列所述底部电极102之间。\n\n[0071]此处以所述遮光层103位于相邻两行所述底部电极102之间为例进行说明。图1所示为微型发光二极管显示面板在底部电极的行方向上的纵截面。微型发光二极管带20上至少包括两个微型发光二极管201，所述微型发光二极管201在所述微型发光二极管带20上以一维阵列的形式排布。\n\n[0072]所述微型发光二极管201包括依次层叠设置的N型电极2011、N型半导体2012、发光层2013、P型半导体2014、P型电极2015。其中，所述微型发光二极管201的所述N型电极2011通过焊料30与所述底部电极102电连接。所述N型电极2011可以为金属电极，所述P型电极2015可以为透明电极。所述焊料30在本实施例中不做限定，可以是导电银胶、锡膏等。\n\n[0073]所述微型发光二极管带20在相邻两所述微型发光二极管201之间设置有凹槽，所述凹槽贯穿所述N型半导体2012、所述发光层2013、所述P型半导体2014，从而在所述微型发光二极管带20上划分出多个所述微型发光二极管201。所述微型发光二极管带20上的所述微型发光二极管201共用一所述P型电极2015，每个所述微型发光二极管201对应一个所述N型电极2011。\n\n[0074]其中，所述凹槽内设置有绝缘填充物202，所述绝缘填充物202在本实施例中不做限定，可以是绝缘的有机材料或无机材料。\n\n[0075]在本实施例中，所述微型发光二极管201包括红色微型发光二极管、绿色微型发光二极管、蓝色微型发光二极管，同一所述微型发光二极管带20上的所述微型发光二极管201的颜色相同。所述微型发光二极管带20位于相邻两所述遮光层103之间，且同一行所述底部电极102所对应的所述微型发光二极管201的颜色相同。若所述遮光层103位于相邻两列所述底部电极102之间，则同一列所述底部电极102所对应的所述微型发光二极管201的颜色相同。\n\n[0076]在一种实施例中，所述微型发光二极管显示面板还包括顶部电极(未图示)，所述顶部电极通过过孔与所述P型电极2015进行电连接。通过所述底部电极102及所述顶部电极向所述微型发光二极管201加载电流，使得所述微型发光二极管201的所述发光层2013进行发光，发出的光线经过所述P型半导体2014透出。\n\n[0077]在本实施例中，所述遮光层103的厚度与绑定后的所述微型发光二极管带20的高度齐平，或略低于所述微型发光二极管带20的高度，从而保证所述遮光层103能有效的遮挡光线。\n\n[0078]本文中的“微型发光二极管”是指尺寸小于等于几个毫米(如几个毫米、几百微米或小于等于100微米)的发光二极管。\n\n[0079]如图5所示，为本申请实施例一提供的微型发光二极管的转印方法流程图。所述转印方法包括以下步骤：\n\n[0080]步骤S10，微型发光二极管阵列包括多个呈阵列排布的微型发光二极管。\n\n[0081]具体地，所述微型发光二极管阵列的制备过程包括以下步骤：\n\n[0082]如图6A，首先在衬底200上形成层叠的N型半导体2012、发光层2013、P型半导体2014、P型电极2015。\n\n[0083]如图6B，然后翻转180°，将所述衬底200与所述N型半导体2012剥离。\n\n[0084]如图6C，在所述N型半导体2012上形成图案化的N型电极2011，一所述N型电极2011对应一微型发光二极管，形成所述微型发光二极管阵列。\n\n[0085]其中，形成所述微型发光二极管阵列2后，步骤S10中还包括：\n\n[0086]步骤S101，如图6D，在所述微型发光二极管阵列的行或列的方向上，在相邻两所述微型发光二极管201之间开凹槽21。\n\n[0087]可以理解的是，图6D中只是例举了一行所述微型发光二极管201为例进行说明。\n\n[0088]步骤S102，如图6E，在所述凹槽21内填充绝缘填充物202。\n\n[0089]步骤S20，如图6F，以所述微型发光二极管201颜色相同的行或列为所述微型发光二极管带20对所述微型发光二极管阵列2进行切割，形成多个条状的微型发光二极管带20。\n\n[0090]其中，每个微型发光二极管带20上包括至少两个微型发光二极管201。\n\n[0091]步骤S30，如图6G，所述微型发光二极管201包括绑定端，采用粘合剂40与所述微型发光二极管带20背离所述绑定端的一侧粘接，然后将临时载体50与所述粘合剂40粘接。\n\n[0092]其中，所述微型发光二极管201的绑定端为N型电极2011。\n\n[0093]所述粘合剂40用来提供粘性，可以是SU-8胶、苯并环丁烯、聚酰亚胺、聚苯并恶唑树脂或硅酮胶，在本实施例中不进行限定。所述临时载体50应为一种容易去除、能起到支撑作用、具有一定厚度的物质，材质可以是硅、蓝宝石、玻璃、陶瓷或聚合物基板。\n\n[0094]步骤S40，如图6G，提供一驱动基板10，所述驱动基板10包括薄膜晶体管阵列层以及位于所述薄膜晶体管阵列层上阵列分布的底部电极102，所述驱动基板10上相邻两行所述底部电极102之间或相邻两列所述底部电极102之间设置有遮光层。\n\n[0095]步骤S50，如图6G，在所述微型发光二极管带20中的每个微型发光二极管201的绑定端填涂焊料30，将所述微型发光二极管带20与所述驱动基板10绑定，所述微型发光二极管带20位于相邻两所述遮光层103之间。\n\n[0096]其中，将条状的所述微型发光二极管带20和所述驱动基板10对齐并结合。所述对齐可以借助光学显微镜，将所述微型发光二极管带20的N型电极2011和驱动基板10上的底部电极102一一对应。使所述微型发光二极管201的绑定端通过所述底部电极102与所述薄膜晶体管阵列层中的薄膜晶体管电连接。\n\n[0097]步骤S60，如图6H，去除所述临时载体50，去除所述粘合剂40，完成所述微型发光二极管201的转印。\n\n[0098]需要说明的是，对粘合剂40进行处理的方法，需要结合所述粘合剂40的特点进行选择，可选的，若使用光敏型粘合剂可以进行紫外曝光或辐射来降低粘性，若使用热处理能够改变粘性的粘合剂则可以进行热处理降低粘性。\n\n[0099]去除所述临时载体50通过激光剥离实现，去除所述粘合剂40可以通过干法刻蚀或湿法腐蚀等方式实现。\n\n[0100]本实施例通过在驱动基板的底部电极之间设置遮光层，从而使得微型发光二极管带在绑定至所述驱动基板上之后，不同颜色的微型发光二极管带之间通过遮光层隔开；从而解决现有微型发光二极管显示面板上不同颜色的微型发光二极管带之间会产生漏光，从而导致混色的技术问题。\n\n[0101]实施例二\n\n[0102]请参照图7和图8，本实施例的微型发光二极管显示面板与上述实施例一中的微型发光二极管显示面板的结构相同/相似，本实施例与上述实施例一的区别在于：同一所述微型发光二极管带20上的所述微型发光二极管201的颜色不同，相邻两行所述底部电极102之间设置有第一遮光层1031，相邻两列所述底部电极102之间设置有第二遮光层1032，所述第一遮光层1031与所述第二遮光层1032交叉设置，所述微型发光二极管201位于相邻两所述第一遮光层1031和/或相邻两所述第二遮光层1032之间。所述第一遮光层1031或所述第二遮光层1032对应所述凹槽的部分填充至所述微型发光二极管带20的所述凹槽中。\n\n[0103]除上述区别外，本实施例的微型发光二极管显示面板与上述实施例一中的微型发光二极管显示面板的结构相同，具体结构请参照上述实施例一中的描述，此处不再赘述。\n\n[0104]如图9所示，为本申请实施例二提供的微型发光二极管的转印方法流程图。所述转印方法包括以下步骤：所述转印方法包括以下步骤：\n\n[0105]步骤S10，微型发光二极管阵列包括多个呈阵列排布的微型发光二极管。\n\n[0106]其中，本实施例中的步骤S10与上述实施例一中步骤S10的方法相同，具体请参照上述实施例一中的描述以及图6A～6E，此处不再赘述。\n\n[0107]步骤S20，以所述微型发光二极管颜色不同的行或列为所述微型发光二极管带对所述微型发光二极管阵列进行切割，形成条状的微型发光二极管带，每个微型发光二极管带上包括至少两个微型发光二极管。\n\n[0108]其中，对所述微型发光二极管阵列进行切割可以参照实施例一中图6F所示。\n\n[0109]步骤S30，所述微型发光二极管包括绑定端，采用粘合剂与所述微型发光二极管带背离所述绑定端的一侧粘接，然后将临时载体与所述粘合剂粘接。\n\n[0110]步骤S40，请参照图2和图8，提供一驱动基板10，所述驱动基板10包括薄膜晶体管阵列层101以及位于所述薄膜晶体管阵列层101上阵列分布的底部电极102，相邻两行所述底部电极102之间和相邻两列所述底部电极102之间均设置有遮光层103。\n\n[0111]步骤S50，请参照图7，在所述微型发光二极管带20中的每个微型发光二极管201的绑定端填涂焊料30，将所述微型发光二极管带20与所述驱动基板10绑定，所述遮光层103对应所述凹槽的部分填充至所述凹槽中，所述微型发光二极管201位于相邻两所述遮光层103之间。\n\n[0112]其中，所述微型发光二极管201的绑定端通过所述底部电极102与所述薄膜晶体管阵列层101中的薄膜晶体管电连接。\n\n[0113]步骤S60，去除所述临时载体，去除所述粘合剂，完成所述微型发光二极管的转印。\n\n[0114]其中，去除所述临时载体以及去除所述粘合剂可以参照实施例一中图6H所示。\n\n[0115]本实施例通过在驱动基板的底部电极之间设置遮光层，从而使得微型发光二极管带在绑定至所述驱动基板上之后，微型发光二极管带上不同颜色的微型发光二极管之间通过遮光层隔开，从而解决现有微型发光二极管显示面板上不同颜色的微型发光二极管之间会产生漏光，从而导致混色的技术问题。\n\n[0116]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种微型发光二极管显示面板及微型发光二极管的转印方法。\n\n背景技术\n\n[0002]微型发光二极管显示器(Micro LED)的耗电量仅为LCD显示器的十分之一，其与OLED显示器一样属于自发光，能将像素之间的距离从毫米等级降至微米等级，色彩饱和度接近OLED。Micro LED系统的体积和重量可以再缩小，兼具低功耗、快速反应的特质，最重要的是没有OLED的色衰缺点。由于Micro LED具有上述优点，使其成为最近面板行业研究的热点。\n\n[0003]按照现有技术，在制造全彩色Micro LED显示器件过程中，需要逐个拾取红、绿、蓝(RGB)三种像素的微型发光二极管(LED芯片)，并把它们分别放置到目标基板对应的电极上，通过引线键合、或者倒装焊的方式实现微型发光二极管与基板的电气连接，进而形成全彩色显示器件，这个拾取和放置转移的过程称为微型发光二极管的转印。这个过程中需要多次拾起并放下微型发光二极管，大大降低了生产显示器件的效率，使Micro LED显示器件的成本升高。另外，微型发光二极管转移至目标基板上后，会存在漏光，导致混色的问题。\n\n[0004]因此，现有技术存在缺陷，急需解决。\n\n发明内容\n\n[0005]本申请提供一种微型发光二极管显示面板及微型发光二极管的转印方法，能够解决采用现有转印方法制备的微型发光二极管显示面板产生漏光，从而导致混色的问题。\n\n[0006]为解决上述问题，本申请提供的技术方案如下：\n\n[0007]本申请提供一种微型发光二极管显示面板，包括：\n\n[0008]驱动基板，所述驱动基板包括薄膜晶体管阵列层以及位于所述薄膜晶体管阵列层上阵列分布的底部电极；\n\n[0009]微型发光二极管带，间隔的设置于所述驱动基板上，每个微型发光二极管带上包括至少两个微型发光二极管；\n\n[0010]所述微型发光二极管与所述底部电极一一对应电连接，且所述微型发光二极管通过所述底部电极与所述薄膜晶体管阵列层中的薄膜晶体管电连接；\n\n[0011]其中，相邻两行所述底部电极之间和/或相邻两列所述底部电极之间设置有遮光层，所述微型发光二极管带或所述微型发光二极管位于相邻两所述遮光层之间。\n\n[0012]在本申请的微型发光二极管显示面板中，所述微型发光二极管在所述微型发光二极管带上以一维阵列的形式排布，所述微型发光二极管带在相邻两所述微型发光二极管之间设置有凹槽。\n\n[0013]在本申请的微型发光二极管显示面板中，同一所述微型发光二极管带上的所述微型发光二极管的颜色相同，相邻两行或相邻两列所述底部电极之间设置有所述遮光层，所述微型发光二极管带位于相邻两所述遮光层之间，且同一行或同一列所述底部电极对应的所述微型发光二极管的颜色相同。\n\n[0014]在本申请的微型发光二极管显示面板中，所述凹槽内设置有绝缘填充物。\n\n[0015]在本申请的微型发光二极管显示面板中，同一所述微型发光二极管带上的所述微型发光二极管的颜色不同，相邻两行所述底部电极之间设置有第一遮光层，相邻两列所述底部电极之间设置有第二遮光层，所述第一遮光层与所述第二遮光层交叉设置，所述微型发光二极管位于相邻两所述第一遮光层和/或相邻两所述第二遮光层之间。\n\n[0016]在本申请的微型发光二极管显示面板中，所述第一遮光层或所述第二遮光层对应填充至所述微型发光二极管带的所述凹槽中。\n\n[0017]在本申请的微型发光二极管显示面板中，所述微型发光二极管包括依次层叠设置的N型电极、N型半导体、发光层、P型半导体、P型电极，其中，所述微型发光二极管的所述N型电极通过焊料与所述底部电极电连接，所述凹槽贯穿所述N型半导体、所述发光层、所述P型半导体。\n\n[0018]在本申请的微型发光二极管显示面板中，所述微型发光二极管带上的至少两所述微型发光二极管共用一所述P型电极，每个所述微型发光二极管对应一个所述N型电极。\n\n[0019]本申请还提供一种微型发光二极管的转印方法，所述转印方法包括以下步骤：\n\n[0020]步骤S10，微型发光二极管阵列包括多个呈阵列排布的微型发光二极管；\n\n[0021]步骤S20，将所述微型发光二极管阵列以行或列的形式切割成多个条状的微型发光二极管带，每个微型发光二极管带上包括至少两个微型发光二极管；\n\n[0022]步骤S30，所述微型发光二极管包括绑定端，采用粘合剂与所述微型发光二极管带背离所述绑定端的一侧粘接，然后将临时载体与所述粘合剂粘接；\n\n[0023]步骤S40，提供一驱动基板，所述驱动基板包括薄膜晶体管阵列层以及位于所述薄膜晶体管阵列层上阵列分布的底部电极，相邻两行所述底部电极之间和/或相邻两列所述底部电极之间设置有遮光层；\n\n[0024]步骤S50，在所述微型发光二极管带中的每个微型发光二极管的绑定端填涂焊料，将所述微型发光二极管带与所述驱动基板绑定，所述微型发光二极管带或所述微型发光二极管位于相邻两所述遮光层之间，所述微型发光二极管的绑定端通过所述底部电极与所述薄膜晶体管阵列层中的薄膜晶体管电连接；\n\n[0025]步骤S60，去除所述临时载体，去除所述粘合剂，完成所述微型发光二极管的转印。\n\n[0026]在本申请的转印方法中，在所述步骤S20之前，所述转印方法还包括以下步骤：\n\n[0027]步骤S101，在所述微型发光二极管阵列的行或列的方向上，在相邻两所述微型发光二极管之间开凹槽。\n\n[0028]在本申请的转印方法中，所述微型发光二极管包括依次层叠设置的N型电极、N型半导体、发光层、P型半导体、P型电极，其中，所述微型发光二极管的所述N型电极为所述绑定端，所述凹槽贯穿所述N型半导体、所述发光层、所述P型半导体。\n\n[0029]在本申请的转印方法中，所述微型发光二极管在所述微型发光二极管带上以一维阵列的形式排布；\n\n[0030]在所述步骤S20中，以所述微型发光二极管颜色相同的行或列为所述微型发光二极管带对所述微型发光二极管阵列进行切割；\n\n[0031]在所述步骤S40中，所述驱动基板上相邻两行所述底部电极之间或相邻两列所述底部电极之间设置有遮光层；\n\n[0032]在所述步骤S50中，所述微型发光二极管带与所述驱动基板绑定后，所述微型发光二极管带位于相邻两所述遮光层之间。\n\n[0033]在本申请的转印方法中，在所述步骤S101之后且在所述步骤S20之前，所述转印方法还包括以下步骤：\n\n[0034]步骤S102，在所述凹槽内填充绝缘填充物。\n\n[0035]在本申请的转印方法中，所述微型发光二极管在所述微型发光二极管带上以一维阵列的形式排布；\n\n[0036]在所述步骤S20中，以所述微型发光二极管颜色不同的行或列为所述微型发光二极管带对所述微型发光二极管阵列进行切割；\n\n[0037]在所述步骤S40中，所述驱动基板上相邻两行所述底部电极之间和相邻两列所述底部电极之间均设置有遮光层；\n\n[0038]在所述步骤S50中，所述微型发光二极管带与所述驱动基板绑定后，所述遮光层对应所述凹槽的部分填充至所述凹槽中，所述微型发光二极管位于相邻两所述遮光层之间。\n\n[0039]本申请的有益效果为：本申请提供的微型发光二极管显示面板及微型发光二极管的转印方法，通过在驱动基板的底部电极之间设置遮光层，从而使得微型发光二极管带在绑定至所述驱动基板上之后，不同颜色的微型发光二极管带之间通过遮光层隔开；或者微型发光二极管带上不同颜色的微型发光二极管之间通过遮光层隔开，从而解决现有微型发光二极管显示面板上不同颜色的微型发光二极管带之间或不同颜色的微型发光二极管之间会产生漏光，从而导致混色的技术问题。\n\n附图说明\n\n[0040]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0041]图1为本申请实施例一提供的微型发光二极管显示面板的截面图；\n\n[0042]图2为本申请提供的驱动基板的截面图；\n\n[0043]图3为本申请的微型发光二极管显示面板中微型发光二极管的转印方法流程图；\n\n[0044]图4为本申请实施例一提供的微型发光二极管显示面板的俯视图；\n\n[0045]图5为本申请实施例一的微型发光二极管显示面板中微型发光二极管的转印方法流程图；\n\n[0046]图6A～6H为本申请实施例一的微型发光二极管显示面板中微型发光二极管的转印流程示意图；\n\n[0047]图7为本申请实施例二提供的微型发光二极管显示面板的截面图；\n\n[0048]图8为本申请实施例二提供的微型发光二极管显示面板的俯视图；\n\n[0049]图9为本申请实施例二的微型发光二极管显示面板中微型发光二极管的转印方法流程图。\n\n具体实施方式\n\n[0050]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0051]在本申请的描述中，需要理解的是，术语“纵向”、“横向”、“长度”、“宽度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。在本申请中，“/”表示“或者”的意思。\n\n[0052]本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。\n\n[0053]本申请针对采用传统的微型发光二极管转印方法制备的微型发光二极管显示面板会产生漏光，从而导致混色的技术问题，本实施例能够解决该缺陷。\n\n[0054]结合图1和图7所示，本申请提供一种微型发光二极管显示面板，包括：驱动基板10，所述驱动基板10包括薄膜晶体管阵列层101以及位于所述薄膜晶体管阵列层101上阵列分布的底部电极102；微型发光二极管带20间隔的设置于所述驱动基板10上，每个微型发光二极管带20上包括至少两个微型发光二极管201；所述微型发光二极管201与所述底部电极102一一对应电连接，且所述微型发光二极管201通过所述底部电极102与所述薄膜晶体管阵列层101中的薄膜晶体管1010电连接。\n\n[0055]其中，相邻两行所述底部电极102之间和/或相邻两列所述底部电极102之间设置有遮光层103，所述微型发光二极管带20或所述微型发光二极管201位于相邻两所述遮光层103之间。\n\n[0056]请参照图2，为本申请提供的驱动基板的截面图。驱动基板10包括衬底基板100，位于所述衬底基板100上的薄膜晶体管阵列层101，位于所述薄膜晶体管阵列层101上的底部电极102以及遮光层103。\n\n[0057]所述薄膜晶体管阵列层101包括缓冲层1011、有源层1012、栅极绝缘层1013、栅极1014、介电层1015、源/漏极1016及阻隔层1017。在所述衬底基板100上形成所述缓冲层1011，并在所述缓冲层1011上形成图案化的有源层1012，对所述有源层1012的两端分别进行N离子掺杂及P离子掺杂，使得所述有源层1012形成沟道层及分设于所述沟道层两侧的第一掺杂区及第二掺杂区。在所述有源层1012上形成所述栅极绝缘层1013。在所述栅极绝缘层1013上形成所述栅极1014，所述栅极1014垂直方向的投影位于所述沟道层内。在所述栅极1014上形成所述介电层1015，自所述介电层1015向所述有源层1012延伸形成两个过孔。在所述介电层1015上形成所述源/漏极1016，并使所述源/漏极1016通过所述过孔分别与所述第一掺杂区及所述第二掺杂区电连接。在所述源/漏极1016上形成所述阻隔层1017。薄膜晶体管1010包括有源层1012、栅极1014及源/漏极1016，可以理解的是，根据实际需要，所述薄膜晶体管1010还可以为其它类型的薄膜晶体管，如普通TFT、HTPS-TFT等其它类型的薄膜晶体管。\n\n[0058]所述阻隔层1017上形成有阵列排布的底部电极102，所述底部电极102通过所述阻隔层1017上的过孔与所述源/漏极1016电连接。所述阻隔层1017上还设置有平坦层104，平坦层104图案化后形成像素孔1041。\n\n[0059]所述遮光层103设置于所述平坦层104上，所述遮光层103位于相邻两行所述底部电极102之间或相邻两列所述底部电极102之间；或者，所述遮光层103呈网格状，位于相邻两行所述底部电极102之间以及相邻两列所述底部电极102之间。所述遮光层103可以是黑色矩阵、黑色有机光阻、聚酰亚胺材料等具有遮光性能的材料。\n\n[0060]请参照图3所示，为本申请的微型发光二极管显示面板中微型发光二极管的转印方法流程图，所述转印方法包括以下步骤：\n\n[0061]步骤S10，微型发光二极管阵列包括多个呈阵列排布的微型发光二极管。\n\n[0062]步骤S20，将所述微型发光二极管阵列以行或列的形式切割成多个条状的微型发光二极管带，每个微型发光二极管带上包括至少两个微型发光二极管。\n\n[0063]步骤S30，所述微型发光二极管包括绑定端，采用粘合剂与所述微型发光二极管带背离所述绑定端的一侧粘接，然后将临时载体与所述粘合剂粘接。\n\n[0064]步骤S40，提供一驱动基板，所述驱动基板包括薄膜晶体管阵列层以及位于所述薄膜晶体管阵列层上阵列分布的底部电极，相邻两行所述底部电极之间和/或相邻两列所述底部电极之间设置有遮光层。\n\n[0065]步骤S50，在所述微型发光二极管带中的每个微型发光二极管的绑定端填涂焊料，将所述微型发光二极管带与所述驱动基板绑定，所述微型发光二极管带或所述微型发光二极管位于相邻两所述遮光层之间，所述微型发光二极管的绑定端通过所述底部电极与所述薄膜晶体管阵列层中的薄膜晶体管电连接。\n\n[0066]步骤S60，去除所述临时载体，去除所述粘合剂，完成所述微型发光二极管的转印。\n\n[0067]本申请提供的微型发光二极管显示面板及微型发光二极管的转印方法，通过在驱动基板的底部电极之间设置遮光层，从而使得微型发光二极管带在绑定至所述驱动基板上之后，不同颜色的微型发光二极管带之间通过遮光层隔开；或者微型发光二极管带上不同颜色的微型发光二极管之间通过遮光层隔开，从而解决现有微型发光二极管显示面板上不同颜色的微型发光二极管带之间或不同颜色的微型发光二极管之间会产生漏光，从而导致混色的技术问题。\n\n[0068]以下请结合具体实施例对本申请的微型发光二极管显示面板及微型发光二极管的转印方法进行详细描述。\n\n[0069]实施例一\n\n[0070]请参照图1和图4，图1为本申请实施例一提供的微型发光二极管显示面板的截面图；图4为本申请实施例一提供的微型发光二极管显示面板的俯视图。所述微型发光二极管显示面板包括驱动基板10和微型发光二极管带20。所述驱动基板10包括薄膜晶体管阵列层101、底部电极102及遮光层103。在本实施例中，所述遮光层103位于相邻两行所述底部电极102之间或相邻两列所述底部电极102之间。\n\n[0071]此处以所述遮光层103位于相邻两行所述底部电极102之间为例进行说明。图1所示为微型发光二极管显示面板在底部电极的行方向上的纵截面。微型发光二极管带20上至少包括两个微型发光二极管201，所述微型发光二极管201在所述微型发光二极管带20上以一维阵列的形式排布。\n\n[0072]所述微型发光二极管201包括依次层叠设置的N型电极2011、N型半导体2012、发光层2013、P型半导体2014、P型电极2015。其中，所述微型发光二极管201的所述N型电极2011通过焊料30与所述底部电极102电连接。所述N型电极2011可以为金属电极，所述P型电极2015可以为透明电极。所述焊料30在本实施例中不做限定，可以是导电银胶、锡膏等。\n\n[0073]所述微型发光二极管带20在相邻两所述微型发光二极管201之间设置有凹槽，所述凹槽贯穿所述N型半导体2012、所述发光层2013、所述P型半导体2014，从而在所述微型发光二极管带20上划分出多个所述微型发光二极管201。所述微型发光二极管带20上的所述微型发光二极管201共用一所述P型电极2015，每个所述微型发光二极管201对应一个所述N型电极2011。\n\n[0074]其中，所述凹槽内设置有绝缘填充物202，所述绝缘填充物202在本实施例中不做限定，可以是绝缘的有机材料或无机材料。\n\n[0075]在本实施例中，所述微型发光二极管201包括红色微型发光二极管、绿色微型发光二极管、蓝色微型发光二极管，同一所述微型发光二极管带20上的所述微型发光二极管201的颜色相同。所述微型发光二极管带20位于相邻两所述遮光层103之间，且同一行所述底部电极102所对应的所述微型发光二极管201的颜色相同。若所述遮光层103位于相邻两列所述底部电极102之间，则同一列所述底部电极102所对应的所述微型发光二极管201的颜色相同。\n\n[0076]在一种实施例中，所述微型发光二极管显示面板还包括顶部电极(未图示)，所述顶部电极通过过孔与所述P型电极2015进行电连接。通过所述底部电极102及所述顶部电极向所述微型发光二极管201加载电流，使得所述微型发光二极管201的所述发光层2013进行发光，发出的光线经过所述P型半导体2014透出。\n\n[0077]在本实施例中，所述遮光层103的厚度与绑定后的所述微型发光二极管带20的高度齐平，或略低于所述微型发光二极管带20的高度，从而保证所述遮光层103能有效的遮挡光线。\n\n[0078]本文中的“微型发光二极管”是指尺寸小于等于几个毫米(如几个毫米、几百微米或小于等于100微米)的发光二极管。\n\n[0079]如图5所示，为本申请实施例一提供的微型发光二极管的转印方法流程图。所述转印方法包括以下步骤：\n\n[0080]步骤S10，微型发光二极管阵列包括多个呈阵列排布的微型发光二极管。\n\n[0081]具体地，所述微型发光二极管阵列的制备过程包括以下步骤：\n\n[0082]如图6A，首先在衬底200上形成层叠的N型半导体2012、发光层2013、P型半导体2014、P型电极2015。\n\n[0083]如图6B，然后翻转180°，将所述衬底200与所述N型半导体2012剥离。\n\n[0084]如图6C，在所述N型半导体2012上形成图案化的N型电极2011，一所述N型电极2011对应一微型发光二极管，形成所述微型发光二极管阵列。\n\n[0085]其中，形成所述微型发光二极管阵列2后，步骤S10中还包括：\n\n[0086]步骤S101，如图6D，在所述微型发光二极管阵列的行或列的方向上，在相邻两所述微型发光二极管201之间开凹槽21。\n\n[0087]可以理解的是，图6D中只是例举了一行所述微型发光二极管201为例进行说明。\n\n[0088]步骤S102，如图6E，在所述凹槽21内填充绝缘填充物202。\n\n[0089]步骤S20，如图6F，以所述微型发光二极管201颜色相同的行或列为所述微型发光二极管带20对所述微型发光二极管阵列2进行切割，形成多个条状的微型发光二极管带20。\n\n[0090]其中，每个微型发光二极管带20上包括至少两个微型发光二极管201。\n\n[0091]步骤S30，如图6G，所述微型发光二极管201包括绑定端，采用粘合剂40与所述微型发光二极管带20背离所述绑定端的一侧粘接，然后将临时载体50与所述粘合剂40粘接。\n\n[0092]其中，所述微型发光二极管201的绑定端为N型电极2011。\n\n[0093]所述粘合剂40用来提供粘性，可以是SU-8胶、苯并环丁烯、聚酰亚胺、聚苯并恶唑树脂或硅酮胶，在本实施例中不进行限定。所述临时载体50应为一种容易去除、能起到支撑作用、具有一定厚度的物质，材质可以是硅、蓝宝石、玻璃、陶瓷或聚合物基板。\n\n[0094]步骤S40，如图6G，提供一驱动基板10，所述驱动基板10包括薄膜晶体管阵列层以及位于所述薄膜晶体管阵列层上阵列分布的底部电极102，所述驱动基板10上相邻两行所述底部电极102之间或相邻两列所述底部电极102之间设置有遮光层。\n\n[0095]步骤S50，如图6G，在所述微型发光二极管带20中的每个微型发光二极管201的绑定端填涂焊料30，将所述微型发光二极管带20与所述驱动基板10绑定，所述微型发光二极管带20位于相邻两所述遮光层103之间。\n\n[0096]其中，将条状的所述微型发光二极管带20和所述驱动基板10对齐并结合。所述对齐可以借助光学显微镜，将所述微型发光二极管带20的N型电极2011和驱动基板10上的底部电极102一一对应。使所述微型发光二极管201的绑定端通过所述底部电极102与所述薄膜晶体管阵列层中的薄膜晶体管电连接。\n\n[0097]步骤S60，如图6H，去除所述临时载体50，去除所述粘合剂40，完成所述微型发光二极管201的转印。\n\n[0098]需要说明的是，对粘合剂40进行处理的方法，需要结合所述粘合剂40的特点进行选择，可选的，若使用光敏型粘合剂可以进行紫外曝光或辐射来降低粘性，若使用热处理能够改变粘性的粘合剂则可以进行热处理降低粘性。\n\n[0099]去除所述临时载体50通过激光剥离实现，去除所述粘合剂40可以通过干法刻蚀或湿法腐蚀等方式实现。\n\n[0100]本实施例通过在驱动基板的底部电极之间设置遮光层，从而使得微型发光二极管带在绑定至所述驱动基板上之后，不同颜色的微型发光二极管带之间通过遮光层隔开；从而解决现有微型发光二极管显示面板上不同颜色的微型发光二极管带之间会产生漏光，从而导致混色的技术问题。\n\n[0101]实施例二\n\n[0102]请参照图7和图8，本实施例的微型发光二极管显示面板与上述实施例一中的微型发光二极管显示面板的结构相同/相似，本实施例与上述实施例一的区别在于：同一所述微型发光二极管带20上的所述微型发光二极管201的颜色不同，相邻两行所述底部电极102之间设置有第一遮光层1031，相邻两列所述底部电极102之间设置有第二遮光层1032，所述第一遮光层1031与所述第二遮光层1032交叉设置，所述微型发光二极管201位于相邻两所述第一遮光层1031和/或相邻两所述第二遮光层1032之间。所述第一遮光层1031或所述第二遮光层1032对应所述凹槽的部分填充至所述微型发光二极管带20的所述凹槽中。\n\n[0103]除上述区别外，本实施例的微型发光二极管显示面板与上述实施例一中的微型发光二极管显示面板的结构相同，具体结构请参照上述实施例一中的描述，此处不再赘述。\n\n[0104]如图9所示，为本申请实施例二提供的微型发光二极管的转印方法流程图。所述转印方法包括以下步骤：所述转印方法包括以下步骤：\n\n[0105]步骤S10，微型发光二极管阵列包括多个呈阵列排布的微型发光二极管。\n\n[0106]其中，本实施例中的步骤S10与上述实施例一中步骤S10的方法相同，具体请参照上述实施例一中的描述以及图6A～6E，此处不再赘述。\n\n[0107]步骤S20，以所述微型发光二极管颜色不同的行或列为所述微型发光二极管带对所述微型发光二极管阵列进行切割，形成条状的微型发光二极管带，每个微型发光二极管带上包括至少两个微型发光二极管。\n\n[0108]其中，对所述微型发光二极管阵列进行切割可以参照实施例一中图6F所示。\n\n[0109]步骤S30，所述微型发光二极管包括绑定端，采用粘合剂与所述微型发光二极管带背离所述绑定端的一侧粘接，然后将临时载体与所述粘合剂粘接。\n\n[0110]步骤S40，请参照图2和图8，提供一驱动基板10，所述驱动基板10包括薄膜晶体管阵列层101以及位于所述薄膜晶体管阵列层101上阵列分布的底部电极102，相邻两行所述底部电极102之间和相邻两列所述底部电极102之间均设置有遮光层103。\n\n[0111]步骤S50，请参照图7，在所述微型发光二极管带20中的每个微型发光二极管201的绑定端填涂焊料30，将所述微型发光二极管带20与所述驱动基板10绑定，所述遮光层103对应所述凹槽的部分填充至所述凹槽中，所述微型发光二极管201位于相邻两所述遮光层103之间。\n\n[0112]其中，所述微型发光二极管201的绑定端通过所述底部电极102与所述薄膜晶体管阵列层101中的薄膜晶体管电连接。\n\n[0113]步骤S60，去除所述临时载体，去除所述粘合剂，完成所述微型发光二极管的转印。\n\n[0114]其中，去除所述临时载体以及去除所述粘合剂可以参照实施例一中图6H所示。\n\n[0115]本实施例通过在驱动基板的底部电极之间设置遮光层，从而使得微型发光二极管带在绑定至所述驱动基板上之后，微型发光二极管带上不同颜色的微型发光二极管之间通过遮光层隔开，从而解决现有微型发光二极管显示面板上不同颜色的微型发光二极管之间会产生漏光，从而导致混色的技术问题。\n\n[0116]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10763, 23817, '技术领域\n\n[0001]本发明涉及显示领域，特别涉及一种灯板、背光模组以及显示装置。\n\n背景技术\n\n[0002]近年来，随着全面屏液晶显示技术的发展，miniLED和microLED技术因其直下式发光的特点，可以对LCM进行分区控光，在提升LCM对比度性能上有着天然的优势。\n\n[0003]为了实现高对比度，会对miniLED的发光芯片300(chip)进行分区，每一分区200独立控制各个分区200的发光芯片300的发光状态，而同一个分区200内的发光芯片300的发光状态则是相同的。\n\n[0004]当miniLED灯板整体尺寸较大(如8寸以上)行业内的通常做法将灯板分成几块制作，然后采用拼接方案组装到一起拼成一个整体，原因如下：\n\n[0005]miniLED灯板制作过程中包含灯板制作，chip贴片，膜压，裁切等工序，每个工序都有相应的制作机台(设备)，如果灯板尺寸较大，则某些机台可能因为空间受限无法使用，而把灯板分隔成小板，则具备更好的设备适用性。\n\n[0006]当miniLED灯板中出现某个位置损坏时，可以只替换掉对应的那小块(拼接板)灯板即可，而不需要报废整个灯板，返工操作方便代价更低。\n\n[0007]但是，较大尺寸的miniLED灯板采用拼接方案制作也有弊端，即有可能出现分区面积不均匀的情况。\n\n[0008]如图1所示，两个拼板100的中间存在物理断开，当拼版100中的普通分区200包含6个发光芯片300时，处于两个拼板100拼接处的分区只能包含4个发光芯片300或2个发光芯片300，单个分区200所含发光芯片的数量不同，会增加控光难度，降低控光精度。\n\n发明内容\n\n[0009]本发明的目的在于，解决现有灯板因拼板拼接处的物理间隔而不能均匀分区、灯板发光均一性不佳的技术问题。\n\n[0010]为实现上述目的，本发明提供一种灯板，包括若干拼板；每一拼板设有若干发光芯片；所述灯板包括若干分区，每一分区内的发光芯片的数量相同。\n\n[0011]进一步地，所述分区包括第一分区以及第二分区；所述第一分区在整块的拼板上；所述第二分区在两个相邻的拼板之间。\n\n[0012]进一步地，相邻两个拼板之间设有导电层，用于连接所述第二分区中的发光芯片。\n\n[0013]进一步地，所述拼板拼接处的侧边设有蚀刻金属层；相邻两个拼板的蚀刻金属层通过所述导电层相互压合。\n\n[0014]进一步地，所述导电层包括导电胶或者拉巴焊。\n\n[0015]进一步地，所述拼板的基板为硬质线路板；所述发光芯片设于所述硬质线路板上。\n\n[0016]为实现上述目的，本发明还提供一种背光模组，包括如前文所述的灯板。\n\n[0017]进一步地，所述背光模组还包括光学膜片。\n\n[0018]进一步地，所述灯板为MiniLED。\n\n[0019]为实现上述目的，本发明还提供一种显示装置，包括如前文所述的背光模组。\n\n[0020]本发明的技术效果在于，拼板之间通过导电层形成电连接，使得灯板可进行均匀分区，每一分区内发光芯片的数量保持一致，使得每一分区内发光芯片的发光效果相同，即能提高灯板的发光均一性，进一步提高显示面板的发光均一性。\n\n附图说明\n\n[0021]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0022]图1为现有技术中灯板的示意图；\n\n[0023]图2为本发明实施例所述显示装置的结构示意图；\n\n[0024]图3为本发明实施例所述灯板的示意图；\n\n[0025]图4为本发明实施例所述灯板的局部放大图。\n\n[0026]部分组件标识如下：\n\n[0027]100、拼板；200、分区；300、发光芯片；\n\n[0028]1、拼板；2、分区；3、发光芯片；4、导光层；5、蚀刻金属层；\n\n[0029]11、第一拼板；12、第二拼板；\n\n[0030]21、第一分区；22、第二分区；\n\n[0031]10、灯板；20、光学膜片；30、显示面板。\n\n具体实施方式\n\n[0032]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0033]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0034]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0035]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0036]下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0037]具体的，请参阅图2，本发明实施例提供一种显示装置，包括背光模组(BLU)以及显示面板30，还包括控制电极、柔性线路板等。所述背光模组包括灯板10以及光学膜片20，所述背光模组为采用MicroLED技术制备而得的直下式背光模组。\n\n[0038]如图3所示，为制作出大尺寸的灯板，本实施例中的灯板10采用多个拼板1拼接的方案。为实现高对比度，在本实施例中，对灯板10中的发光芯片3进行分区。灯板10包括拼板1、分区2以及导电层4，且灯板10为MiniLED灯板。\n\n[0039]拼板1包括第一拼板11以及第二拼板12，分区2包括第一分区21以及第二分区22。\n\n[0040]拼板1的基板为硬质线路板，发光芯片3设于所述硬质线路板上。\n\n[0041]第一拼板11上设有若干第一分区21，每一第一分区21内设有若干发光芯片3，在本实施例中，每一第一分区21内设有6个发光芯片3，每一第一分区21独立控制其内发光芯片3的发光状态，第一分区21内每一发光芯片3的发光状态是相同的。每一第一分区21内的发光芯片3的数量相同，使得每一第一分区21的发光效果相同，提高显示装置的发光均一性。\n\n[0042]第二拼板12上设有若干第一分区21，每一第二拼板12内设有若干发光芯片3，在本实施例中，每一第一分区21内设有6个发光芯片3，每一第一分区21独立控制其内发光芯片3的发光状态，第一分区21内每一发光芯片3的发光状态是相同的。每一第一分区21内的发光芯片3的数量相同，使得每一第一分区21的发光效果相同，提高显示装置的发光均一性。\n\n[0043]如图4所示，第二分区22内也包括6个发光芯片3，与第一分区11内的发光芯片3的数量相同。每一第二分区22能独立控制其内的发光芯片3的发光状态，且第二分区22内每一发光芯片3的发光状态是相同的。这6个发光芯片3分别来自第一拼板11以及第二第二拼板12。\n\n[0044]相邻拼板拼接处的侧边设有蚀刻金属层5，即第一拼板11与第二拼板12对应的侧边处设有蚀刻金属层5，第二拼板12与第一拼板11对应的侧边处设有蚀刻金属层5，两个蚀刻金属层5通过导电层4相互压合，导电层4可为导电胶或拉巴焊，当蚀刻金属层5中金属片之间的间距和宽度较大时，导电层4可采用拉巴焊，当蚀刻金属层5中金属片之间的间距和宽度较小时，导电层4可采用导电胶。\n\n[0045]蚀刻金属层5具有良好的导电性，拉巴焊与导电胶都具有良好的导电性，导电层4与蚀刻金属层5的连接，使得第一拼板11与第二拼板12之间能产生电连接，使得第二分区22内的发光芯片3与第一分区21内的发光芯片3的发光效果相同，提高各拼板连接处的发光均一性，进一步提高灯板的对比度，且提升灯板的控光精准度。\n\n[0046]光学膜片20包括反射片、扩散片、增光片等，光学膜片20对光线做进一步引导，使其高效出光。\n\n[0047]所述反射片起到反射作用，一般设于所述背光模组的底部，对从灯板10处向下出射的光线进行反射，使其向上出射，可提高光线的出射率。\n\n[0048]所述扩散片起到扩散作用，使得光线出射时能均匀出射，能提高显示装置的发光均一性。\n\n[0049]所述增光片起到聚光的作用，一般设于所述扩散片的上方。\n\n[0050]本实施例所述显示装置中的灯板采用若干拼板拼接而成，相邻拼板拼接处的侧边设有蚀刻金属层，通过导电层将两个蚀刻金属层相互压合，形成电连接，无需顾虑拼板之间的物理间隔，使得所有拼板拼接而成的灯板等同于一张大尺寸的灯板，进而能对所述灯板进行均匀分区，也可对不同的拼板进行任意大小和数量上的电路分区。拼接型的灯板在效果上与大尺寸整张灯板的效果相同，优点在于，具备更好的设备适用性，可适用于多种尺寸的设备，且当灯板中出现某个位置损坏时，可以只替换掉对应的拼板即可，而不需要报废整个灯板，返工操作方便代价更低。\n\n[0051]每一分区可独立控制其内发光芯片的发光状态，每一分区内的发光芯片数量相同，使得每一分区的发光效果相同，提高灯板各个分区发光效果的均一性，进一步提高灯板的对比度，且提升灯板的控光精准度，进一步改善显示装置的发光效果。\n\n[0052]本实施例所述显示装置的技术效果在于，拼板之间通过导电层形成电连接，使得灯板可进行均匀分区，每一分区内发光芯片的数量保持一致，使得每一分区内发光芯片的发光效果相同，即能提高灯板的发光均一性，进一步提高显示面板的发光均一性。\n\n[0053]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0054]以上对本发明实施例所提供的一种灯板、背光模组以及显示装置进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。', '技术领域\n\n[0001]本发明涉及显示领域，特别涉及一种灯板、背光模组以及显示装置。\n\n背景技术\n\n[0002]近年来，随着全面屏液晶显示技术的发展，miniLED和microLED技术因其直下式发光的特点，可以对LCM进行分区控光，在提升LCM对比度性能上有着天然的优势。\n\n[0003]为了实现高对比度，会对miniLED的发光芯片300(chip)进行分区，每一分区200独立控制各个分区200的发光芯片300的发光状态，而同一个分区200内的发光芯片300的发光状态则是相同的。\n\n[0004]当miniLED灯板整体尺寸较大(如8寸以上)行业内的通常做法将灯板分成几块制作，然后采用拼接方案组装到一起拼成一个整体，原因如下：\n\n[0005]miniLED灯板制作过程中包含灯板制作，chip贴片，膜压，裁切等工序，每个工序都有相应的制作机台(设备)，如果灯板尺寸较大，则某些机台可能因为空间受限无法使用，而把灯板分隔成小板，则具备更好的设备适用性。\n\n[0006]当miniLED灯板中出现某个位置损坏时，可以只替换掉对应的那小块(拼接板)灯板即可，而不需要报废整个灯板，返工操作方便代价更低。\n\n[0007]但是，较大尺寸的miniLED灯板采用拼接方案制作也有弊端，即有可能出现分区面积不均匀的情况。\n\n[0008]如图1所示，两个拼板100的中间存在物理断开，当拼版100中的普通分区200包含6个发光芯片300时，处于两个拼板100拼接处的分区只能包含4个发光芯片300或2个发光芯片300，单个分区200所含发光芯片的数量不同，会增加控光难度，降低控光精度。\n\n发明内容\n\n[0009]本发明的目的在于，解决现有灯板因拼板拼接处的物理间隔而不能均匀分区、灯板发光均一性不佳的技术问题。\n\n[0010]为实现上述目的，本发明提供一种灯板，包括若干拼板；每一拼板设有若干发光芯片；所述灯板包括若干分区，每一分区内的发光芯片的数量相同。\n\n[0011]进一步地，所述分区包括第一分区以及第二分区；所述第一分区在整块的拼板上；所述第二分区在两个相邻的拼板之间。\n\n[0012]进一步地，相邻两个拼板之间设有导电层，用于连接所述第二分区中的发光芯片。\n\n[0013]进一步地，所述拼板拼接处的侧边设有蚀刻金属层；相邻两个拼板的蚀刻金属层通过所述导电层相互压合。\n\n[0014]进一步地，所述导电层包括导电胶或者拉巴焊。\n\n[0015]进一步地，所述拼板的基板为硬质线路板；所述发光芯片设于所述硬质线路板上。\n\n[0016]为实现上述目的，本发明还提供一种背光模组，包括如前文所述的灯板。\n\n[0017]进一步地，所述背光模组还包括光学膜片。\n\n[0018]进一步地，所述灯板为MiniLED。\n\n[0019]为实现上述目的，本发明还提供一种显示装置，包括如前文所述的背光模组。\n\n[0020]本发明的技术效果在于，拼板之间通过导电层形成电连接，使得灯板可进行均匀分区，每一分区内发光芯片的数量保持一致，使得每一分区内发光芯片的发光效果相同，即能提高灯板的发光均一性，进一步提高显示面板的发光均一性。\n\n附图说明\n\n[0021]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0022]图1为现有技术中灯板的示意图；\n\n[0023]图2为本发明实施例所述显示装置的结构示意图；\n\n[0024]图3为本发明实施例所述灯板的示意图；\n\n[0025]图4为本发明实施例所述灯板的局部放大图。\n\n[0026]部分组件标识如下：\n\n[0027]100、拼板；200、分区；300、发光芯片；\n\n[0028]1、拼板；2、分区；3、发光芯片；4、导光层；5、蚀刻金属层；\n\n[0029]11、第一拼板；12、第二拼板；\n\n[0030]21、第一分区；22、第二分区；\n\n[0031]10、灯板；20、光学膜片；30、显示面板。\n\n具体实施方式\n\n[0032]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0033]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0034]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0035]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0036]下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0037]具体的，请参阅图2，本发明实施例提供一种显示装置，包括背光模组(BLU)以及显示面板30，还包括控制电极、柔性线路板等。所述背光模组包括灯板10以及光学膜片20，所述背光模组为采用MicroLED技术制备而得的直下式背光模组。\n\n[0038]如图3所示，为制作出大尺寸的灯板，本实施例中的灯板10采用多个拼板1拼接的方案。为实现高对比度，在本实施例中，对灯板10中的发光芯片3进行分区。灯板10包括拼板1、分区2以及导电层4，且灯板10为MiniLED灯板。\n\n[0039]拼板1包括第一拼板11以及第二拼板12，分区2包括第一分区21以及第二分区22。\n\n[0040]拼板1的基板为硬质线路板，发光芯片3设于所述硬质线路板上。\n\n[0041]第一拼板11上设有若干第一分区21，每一第一分区21内设有若干发光芯片3，在本实施例中，每一第一分区21内设有6个发光芯片3，每一第一分区21独立控制其内发光芯片3的发光状态，第一分区21内每一发光芯片3的发光状态是相同的。每一第一分区21内的发光芯片3的数量相同，使得每一第一分区21的发光效果相同，提高显示装置的发光均一性。\n\n[0042]第二拼板12上设有若干第一分区21，每一第二拼板12内设有若干发光芯片3，在本实施例中，每一第一分区21内设有6个发光芯片3，每一第一分区21独立控制其内发光芯片3的发光状态，第一分区21内每一发光芯片3的发光状态是相同的。每一第一分区21内的发光芯片3的数量相同，使得每一第一分区21的发光效果相同，提高显示装置的发光均一性。\n\n[0043]如图4所示，第二分区22内也包括6个发光芯片3，与第一分区11内的发光芯片3的数量相同。每一第二分区22能独立控制其内的发光芯片3的发光状态，且第二分区22内每一发光芯片3的发光状态是相同的。这6个发光芯片3分别来自第一拼板11以及第二第二拼板12。\n\n[0044]相邻拼板拼接处的侧边设有蚀刻金属层5，即第一拼板11与第二拼板12对应的侧边处设有蚀刻金属层5，第二拼板12与第一拼板11对应的侧边处设有蚀刻金属层5，两个蚀刻金属层5通过导电层4相互压合，导电层4可为导电胶或拉巴焊，当蚀刻金属层5中金属片之间的间距和宽度较大时，导电层4可采用拉巴焊，当蚀刻金属层5中金属片之间的间距和宽度较小时，导电层4可采用导电胶。\n\n[0045]蚀刻金属层5具有良好的导电性，拉巴焊与导电胶都具有良好的导电性，导电层4与蚀刻金属层5的连接，使得第一拼板11与第二拼板12之间能产生电连接，使得第二分区22内的发光芯片3与第一分区21内的发光芯片3的发光效果相同，提高各拼板连接处的发光均一性，进一步提高灯板的对比度，且提升灯板的控光精准度。\n\n[0046]光学膜片20包括反射片、扩散片、增光片等，光学膜片20对光线做进一步引导，使其高效出光。\n\n[0047]所述反射片起到反射作用，一般设于所述背光模组的底部，对从灯板10处向下出射的光线进行反射，使其向上出射，可提高光线的出射率。\n\n[0048]所述扩散片起到扩散作用，使得光线出射时能均匀出射，能提高显示装置的发光均一性。\n\n[0049]所述增光片起到聚光的作用，一般设于所述扩散片的上方。\n\n[0050]本实施例所述显示装置中的灯板采用若干拼板拼接而成，相邻拼板拼接处的侧边设有蚀刻金属层，通过导电层将两个蚀刻金属层相互压合，形成电连接，无需顾虑拼板之间的物理间隔，使得所有拼板拼接而成的灯板等同于一张大尺寸的灯板，进而能对所述灯板进行均匀分区，也可对不同的拼板进行任意大小和数量上的电路分区。拼接型的灯板在效果上与大尺寸整张灯板的效果相同，优点在于，具备更好的设备适用性，可适用于多种尺寸的设备，且当灯板中出现某个位置损坏时，可以只替换掉对应的拼板即可，而不需要报废整个灯板，返工操作方便代价更低。\n\n[0051]每一分区可独立控制其内发光芯片的发光状态，每一分区内的发光芯片数量相同，使得每一分区的发光效果相同，提高灯板各个分区发光效果的均一性，进一步提高灯板的对比度，且提升灯板的控光精准度，进一步改善显示装置的发光效果。\n\n[0052]本实施例所述显示装置的技术效果在于，拼板之间通过导电层形成电连接，使得灯板可进行均匀分区，每一分区内发光芯片的数量保持一致，使得每一分区内发光芯片的发光效果相同，即能提高灯板的发光均一性，进一步提高显示面板的发光均一性。\n\n[0053]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0054]以上对本发明实施例所提供的一种灯板、背光模组以及显示装置进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10764, 23818, '技术领域\n\n[0001]本发明涉及显示领域，特别涉及一种显示装置。\n\n背景技术\n\n[0002]随着显示技术的不断发展与人们对更佳显示效果的追求，在终端设备的应用中(如手机、Pad等)，高屏占比屏幕已经成为主流趋势，由于终端设备中一些功能器件如摄像头、光线传感器等的采光需求，显示屏幕难以实现最佳的屏占比。\n\n[0003]目前实现高屏占比除了收窄边框外主要是采用刘海屏、水滴屏或挖孔屏方案，但这将牺牲部分屏幕空间且采光器件会直接暴露在屏幕上，现有技术中采用屏下摄像头的方案，摄像头一般是设置于屏幕边缘处或角落处的摄像区，这一区域没有像素单元或光源，不能用于显示影像，影响用户体验。目前市面上也有采用升降式摄像头和滑盖方案的全面屏，但这些方案都需增加额外的模组结构或增加设备厚度且消费体验不是特别理想。LCD是目前显示市场中主流显示技术之一，如何实现真正的LCD全面屏显示值得探索与研究。\n\n发明内容\n\n[0004]本发明的目的在于，解决现有的显示装置因设置屏下摄像头导致摄像区不能显示影像，用户体验较差的技术问题。\n\n[0005]为实现上述目的，本发明提供一种显示装置，包括：光学膜层，包括一通孔；显示面板，设于所述光学膜层一侧的表面；所述显示面板包括一透明区，与所述通孔相对设置；摄像头，包括镜头，插入至所述通孔内，且朝向所述透明区；以及若干LED芯片，环绕所述镜头均匀设于所述通孔内，且设于所述摄像头与所述透明区之间。\n\n[0006]进一步地，所述显示面板包括：阵列基板；彩膜基板，与所述阵列基板相对设置；液晶层，设于所述阵列基板与所述彩膜基板之间；第一偏光片，设于所述阵列基板远离所述彩膜基板一侧的表面；以及第二偏光片，设于所述彩膜基板远离所述阵列基板一侧的表面。\n\n[0007]进一步地，所述透明区包括：第一透明部，位于所述第一偏光片内；第二透明部，位于所述阵列基板内；第三透明部，位于所述液晶层内；第四透明部，位于所述彩膜基板内；以及第五透明部，位于所述第二偏光片内；其中，所述第一透明部、所述第二透明部、所述第三透明部、所述第四透明部以及所述第五透明部相对设置。\n\n[0008]进一步地，所述显示装置还包括阻光膜片，设于所述通孔的内侧壁。\n\n[0009]进一步地，所述光学膜层包括：第一膜层；第二膜层，设于所述第一膜层一侧的表面；第三膜层，设于所述第二膜层远离所述第一膜层一侧的表面。\n\n[0010]进一步地，所述通孔包括：第一通孔，贯穿于所述第一膜层；第二通孔，贯穿于所述第二膜层；以及第三通孔，贯穿于所述第三膜层；其中，所述第一通孔、所述第二通孔以及所述第三通孔相对设置。\n\n[0011]进一步地，所述显示装置还包括导光元件，包覆所述LED芯片。\n\n[0012]进一步地，所述LED芯片为红色Mini-LED、绿色Mini-LED、蓝色Mini-LED中的至少一种。\n\n[0013]进一步地，所述摄像头包括：柔性线路板，其一端连接有连接器；感光芯片，设于所述柔性线路板一侧的表面；滤光元件，设于所述感光芯片远离所述柔性线路板一侧的表面；镜片，设于所述滤光元件远离所述感光芯片的一侧；支撑柱，贴附于所述通孔的内侧壁，环绕所述镜片，且设于所述柔性线路板靠近所述镜片一侧的表面；对焦马达，设于所述支撑柱内；以及镜头，设于所述镜片远离所述滤光元件的一侧，且安装至所述支撑柱；其中，所述LED芯片安装至所述支撑柱。\n\n[0014]进一步地，所述LED芯片电连接至所述柔性线路板。\n\n[0015]本发明的技术效果在于，设置屏下摄像头可进一步提升显示装置的屏占比，当LED芯片断电时，摄像区处于采光状态，能正常拍摄，当LED芯片通电时，摄像区处于显示状态，增大显示区域面积的同时，提升用户的体验感。\n\n附图说明\n\n[0016]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0017]图1为本发明实施例1或2或3所述显示装置中摄像区显示时的状态图；\n\n[0018]图2为本发明实施例1或2或3所述显示装置中摄像区不显示时的状态图；\n\n[0019]图3为本发明实施例1所述显示装置的结构示意图；\n\n[0020]图4为本发明实施例1或2或3所述显示装置未放摄像头的示意图；\n\n[0021]图5为本发明实施例1所述摄像区的俯视图；\n\n[0022]图6为本发明实施例1或2或3所述摄像头的结构示意图；\n\n[0023]图7为本发明实施例2所述显示装置的结构示意图；\n\n[0024]图8为本发明实施例2所述摄像区的俯视图；\n\n[0025]图9为本发明实施例3所述显示装置的结构示意图；\n\n[0026]图10为本发明实施例3所述摄像区的俯视图。\n\n[0027]部分组件标识如下：\n\n[0028]100、摄像区；200、显示区；\n\n[0029]11、摄像头；12、阻光膜片；13、LED芯片；14、透明区；15、导光元件；\n\n[0030]111、柔性线路板；112、连接器；113、感光芯片；114、滤光元件；115、镜片；116、支撑柱；117、对焦马达；118、镜头；\n\n[0031]131、红色Mini-LED；132、绿色Mini-LED；133、蓝色Mini-LED；\n\n[0032]141、第一透明部；142、第二透明部；143、第三透明部；144、第四透明部；145、第五透明部；\n\n[0033]20、通孔；201、第一通孔；202、第二通孔；203、第三通孔；\n\n[0034]21、光学膜层；22、显示面板；23、LED灯条；\n\n[0035]211、第一膜层；212、第二膜层；213、第三膜层；\n\n[0036]221、第一反射片；222、阵列基板；223、液晶层；224、彩膜基板；225、第二反射片。\n\n具体实施方式\n\n[0037]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0038]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0039]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0040]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0041]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0042]实施例1\n\n[0043]具体的，请参阅图1至图6，本实施例提供一种显示装置，包括摄像区100以及显示区200。摄像区100包括摄像头11、阻光膜片12、LED芯片13以及透明区14，显示区200包括光学膜层21、显示面板22以及LED灯条23。\n\n[0044]如图3所示，光学膜层21包括第一膜层211、第二膜层212以及第三膜层213，实现对光线的反射、导向以及扩散作用。\n\n[0045]第一膜层211为反射片，起到反射作用，用以将来自LED灯条23的出射光线全部反射后出射，防止光线向下传输，提高光线的利用率。\n\n[0046]第二膜层212设于第一膜层211的上表面，为导光板，起到对光线的导向作用，本实施例中显示装置的背光模组为侧入式背光模组，所以LED灯条23设于光学膜层21的侧面，光线从LED灯条23出射后，进入第二膜层212，即导光板后，光线大部分向上出射，即便有小部分光线从所述导光板的下方出射，也会被位于所述导光板下方的反射片向上反射。还有小部分光线入射到所述导光板与其入光侧相对设置的一侧面，因为这一侧面设有阻光膜片12，所以也不会进一步穿透至摄像区100，一定程度上提高了光线的出射率。\n\n[0047]第三膜层213设于第二膜层212的上表面，第三膜层213为扩散片，使得入射的光线均匀扩散后出射。\n\n[0048]如图4所示，光学膜层12内设有一通孔20，用以放置摄像头等部件。第一通孔201贯穿于第一膜层211，第二通孔202贯穿于第二膜层212，第三通孔203贯穿于第三膜层213，第一通孔201、第二通孔202与第三通孔203相对设置且相互连通。优选的，第一通孔201的内径、第二通孔202的内径与第三通孔203的内径大小相等，使得摄像区100与显示区200之间更易紧密贴合。\n\n[0049]显示面板22包括第一偏光片221、阵列基板222、液晶层223、彩膜基板224以及第二偏光片225。显示面板22实现显示功能。\n\n[0050]第一偏光片221设于第三膜层213的上表面，起到偏光作用。阵列基板222设于第一偏光片221的上表面，为显示装置的电路开关。彩膜基板224设于阵列基板222的上方，与阵列基板222相对设置，彩膜基板224包括RGB色阻、黑色矩阵、隔离柱以及盖板等。液晶层223设于阵列基板222与彩膜基板224之间。第二偏光片225设于彩膜基板224的上表面，起到偏光作用。\n\n[0051]透明区14贯穿于显示面板22，且与所述通孔相对设置，透明区14包括第一透明部141、第二透明部142、第三透明部143、第四透明部144以及第五透明部145。第一透明部141贯穿于第一偏光片221，第一透明部141仍旧具有偏光作用，但其为透明材料，便于光线穿过。第二透明部142贯穿于阵列基板222，第二透明部142依旧具有控制电路开关的作用，但其为透明材料，便于光线穿过。第三透明部143贯穿于液晶层223，第三透明部143依旧具有驱动液晶的作用，但其为可透光部分，便于光线穿过。第四透明部144贯穿于彩膜基板224，第四透明部144内依旧设有RGB色阻、黑色矩阵、隔离柱以及盖板等，可实现滤光作用，但其材质的透明度极高，便于光线穿过。第五透明部145贯穿于第二偏光片225，第五透明部145依旧具有偏光作用，但其为透明材料，便于光线穿过。\n\n[0052]摄像头11设于所述通孔内，如图6所示，摄像头11包括柔性线路板111、连接器112、感光芯片113、滤光元件114、镜片115、支撑柱116、对焦马达117以及镜头118。\n\n[0053]连接器112设于柔性线路板111的一端，用以将柔性线路板111接收到的图像数据向外传输。\n\n[0054]感光芯片113设于柔性线路板111的上表面，感光芯片113为CCD或CMOS结构，用于将镜片115传送过来的光信号转变为电信号，并处理所述电信号，得到相应的图像数据，或者，可与柔性线路板111接收到的图像数据一起处理后再通过连接器112向外传输。\n\n[0055]滤光元件114设于感光芯片113的上方，用以过滤多余的红外光和紫外光。\n\n[0056]镜片115设于滤光元件114的上方，用以采集汇聚光线，可为两个或多个塑料镜片或者玻璃镜片。\n\n[0057]支撑柱116贴附于所述通孔的内侧壁，起到支撑作用，支撑柱116设于柔性线路板111的上表面，且呈环状设于边缘处。\n\n[0058]对焦马达117设于支撑柱116内，用以调整镜片115的位置以获得清晰的图像，即对焦作用。\n\n[0059]镜头118设于镜片115的上方，且安装至支撑柱116，起到保护镜片115的作用。\n\n[0060]阻光膜片12贴附于所述通孔的内侧壁，且设于支撑柱116与光学膜层21之间，起到阻隔或反射光线的作用，防止从LED灯条23处出射的光线进入到摄像头11处。可通过贴付、喷涂、丝印等方式设置阻光涂层或元件，也可以放置挡光铁框等，都能实现阻光作用，摄像区100的俯视图如图5所示。\n\n[0061]LED芯片13安装至支撑柱116的上表面，因为支撑柱116为环状支撑柱，所述LED芯片13也环绕镜头118，均匀分布于支撑柱116上，LED芯片13也可通过引线与柔性线路板111或感光元件113等相关控制元件相连接，可以实现LED芯片13与摄像头11的同步控制，即当摄像头11工作时，可控制LED芯片13断电，实现摄像功能；当摄像头11关闭时，可控制LED芯片13通电开始工作，使得摄像区100能正常显示，实现全面屏。\n\n[0062]当LED芯片13通电时，摄像区100开启背光模式，此时感光芯片113等采光器件处于非工作状态，即不采光，因为摄像区100的透明区14内依旧设有阵列基板、彩膜基板以及液晶层等相关器件，能实现发光显示的功能，摄像区100能正常显示，同时显示区200处于正常显示状态，即实现全面屏效果(参见图1)。\n\n[0063]当LED芯片13断电时，摄像区100关闭背光模式，此时感光芯片113等采光器件处于工作状态，即开始采光，通过LCD驱动调整摄像区100对应液晶(即第三透明部143)全部转变为高透过率状态，搭配第二透明部142和第四透明部144的高透过率设计，外界光线可透过显示面板22进入摄像区100下方对应的摄像头11，实现采光功能，此时显示区200依旧正常显示，由于摄像头11与侧入光学膜层21间有阻光膜片12，因此显示区200的背光不会影响摄像头11的正常采光，摄像头11能正常工作(参见图2)。\n\n[0064]本实施例所述显示装置的技术效果在于，设置屏下摄像头可进一步提升显示装置的屏占比，当LED芯片断电时，摄像区处于采光状态，能正常拍摄，当LED芯片通电时，摄像区处于显示状态，增大显示区域面积的同时，提升用户的体验感。\n\n[0065]实施例2\n\n[0066]具体的，请参阅图7，本实施例提供一种显示装置，包括摄像区100以及显示区200。摄像区100包括摄像头11、阻光膜片12、LED芯片13、透明区14以及导光元件15，显示区200包括光学膜层21、显示面板22以及LED灯条23。\n\n[0067]光学膜层21包括第一膜层211、第二膜层212以及第三膜层213，实现对光线的反射、导向以及扩散作用。\n\n[0068]第一膜层211为反射片，起到反射作用，用以将来自LED灯条23的出射光线全部反射后出射，防止光线向下传输，提高光线的利用率。\n\n[0069]第二膜层212设于第一膜层211的上表面，为导光板，起到对光线的导向作用，本实施例中显示装置的背光模组为侧入式背光模组，所以LED灯条23设于光学膜层21的侧面，光线从LED灯条23出射后，进入第二膜层212，即导光板后，光线大部分向上出射，即便有小部分光线从所述导光板的下方出射，也会被位于所述导光板下方的反射片向上反射。还有小部分光线入射到所述导光板与其入光侧相对设置的一侧面，因为这一侧面设有阻光膜片12，所以也不会进一步穿透至摄像区100，一定程度上提高了光线的出射率。\n\n[0070]第三膜层213设于第二膜层212的上表面，第三膜层213为扩散片，使得入射的光线均匀扩散后出射。\n\n[0071]如图4所示，光学膜层12内设有一通孔20，用以放置摄像头等部件。第一通孔201贯穿于第一膜层211，第二通孔202贯穿于第二膜层212，第三通孔203贯穿于第三膜层213，第一通孔201、第二通孔202与第三通孔203相对设置且相互连通。优选的，第一通孔201的内径、第二通孔202的内径与第三通孔203的内径大小相等，使得摄像区100与显示区200之间更易紧密贴合。\n\n[0072]显示面板22包括第一偏光片221、阵列基板222、液晶层223、彩膜基板224以及第二偏光片225。显示面板22实现显示功能。\n\n[0073]第一偏光片221设于第三膜层213的上表面，起到偏光作用。阵列基板222设于第一偏光片221的上表面，为显示装置的电路开关。彩膜基板224设于阵列基板222的上方，与阵列基板222相对设置，彩膜基板224包括RGB色阻、黑色矩阵、隔离柱以及盖板等。液晶层223设于阵列基板222与彩膜基板224之间。第二偏光片225设于彩膜基板224的上表面，起到偏光作用。\n\n[0074]透明区14贯穿于显示面板22，且与所述通孔相对设置，透明区14包括第一透明部141、第二透明部142、第三透明部143、第四透明部144以及第五透明部145。第一透明部141贯穿于第一偏光片221，第一透明部141仍旧具有偏光作用，但其为透明材料，便于光线穿过。第二透明部142贯穿于阵列基板222，第二透明部142依旧具有控制电路开关的作用，但其为透明材料，便于光线穿过。第三透明部143贯穿于液晶层223，第三透明部143依旧具有驱动液晶的作用，但其为可透光部分，便于光线穿过。第四透明部144贯穿于彩膜基板224，第四透明部144内依旧设有RGB色阻、黑色矩阵、隔离柱以及盖板等，可实现滤光作用，但其材质的透明度极高，便于光线穿过。第五透明部145贯穿于第二偏光片225，第五透明部145依旧具有偏光作用，但其为透明材料，便于光线穿过。\n\n[0075]摄像头11设于所述通孔内，如图6所示，摄像头11包括柔性线路板111、连接器112、感光芯片113、滤光元件114、镜片115、支撑柱116、对焦马达117以及镜头118。\n\n[0076]连接器112设于柔性线路板111的一端，用以将柔性线路板111接收到的图像数据向外传输。\n\n[0077]感光芯片113设于柔性线路板111的上表面，感光芯片113为CCD或CMOS结构，用于将镜片115传送过来的光信号转变为电信号，并处理所述电信号，得到相应的图像数据，或者，可与柔性线路板111接收到的图像数据一起处理后再通过连接器112向外传输。\n\n[0078]滤光元件114设于感光芯片113的上方，用以过滤多余的红外光和紫外光。\n\n[0079]镜片115设于滤光元件114的上方，用以采集汇聚光线，可为两个或多个塑料镜片或者玻璃镜片。\n\n[0080]支撑柱116贴附于所述通孔的内侧壁，起到支撑作用，支撑柱116设于柔性线路板111的上表面，且呈环状设于边缘处。\n\n[0081]对焦马达117设于支撑柱116内，用以调整镜片115的位置以获得清晰的图像，即对焦作用。\n\n[0082]镜头118设于镜片115的上方，且安装至支撑柱116，起到保护镜片115的作用。\n\n[0083]阻光膜片12贴附于所述通孔的内侧壁，且设于支撑柱116与光学膜层21之间，起到阻隔或反射光线的作用，防止从LED灯条23处出射的光线进入到摄像头11处。可通过贴付、喷涂、丝印等方式设置阻光涂层或元件，也可以放置挡光铁框等，都能实现阻光作用，摄像区100的俯视图如图8所示。\n\n[0084]LED芯片13安装至支撑柱116的上表面，因为支撑柱116为环状支撑柱，所述LED芯片13也环绕镜头118，均匀分布于支撑柱116上，LED芯片13的亮度均可单独调控，LED芯片13也可通过引线与柔性线路板111或感光元件113等相关控制元件相连接，可以实现LED芯片13与摄像头11的同步控制，即当摄像头11工作时，可控制LED芯片13断电，实现摄像功能；当摄像头11关闭时，可控制LED芯片13通电开始工作，使得摄像区100能正常显示，实现全面屏。\n\n[0085]导光元件15包覆LED芯片13，导光元件15为透明的，透明度高达90％～100％，导光元件15可为光学膜片、光学膜层或扩散粒子等，使得摄像头11周围的一圈LED芯片13的光线能够均匀地入射到摄像区100的下方，并减小摄像区100与显示区200之间背光的差异。\n\n[0086]当LED芯片13通电时，摄像区100开启背光模式，此时感光芯片113等采光器件处于非工作状态，即不采光，因为摄像区100的透明区14内依旧设有阵列基板、彩膜基板以及液晶层等相关器件，能实现发光显示的功能，摄像区100能正常显示，同时显示区200处于正常显示状态，即实现全面屏效果(参见图1)。\n\n[0087]当LED芯片13断电时，摄像区100关闭背光模式，此时感光芯片113等采光器件处于工作状态，即开始采光，通过LCD驱动调整摄像区100对应液晶(即第三透明部143)全部转变为高透过率状态，搭配第二透明部142和第四透明部144的高透过率设计，外界光线可透过显示面板22进入摄像区100下方对应的摄像头11，实现采光功能，此时显示区200依旧正常显示，由于摄像头11与侧入光学膜层21间有阻光膜片12，因此显示区200的背光不会影响摄像头11的正常采光，摄像头11能正常工作(参见图2)。\n\n[0088]本实施例所述显示装置的技术效果在于，设置屏下摄像头可进一步提升显示装置的屏占比，当LED芯片断电时，摄像区处于采光状态，能正常拍摄，当LED芯片通电时，摄像区处于显示状态，增大显示区域面积的同时，提升用户的体验感。增加一层导光元件，使得摄像头周围的一圈LED芯片的光线能够均匀地入射到摄像区的下方，并减小摄像区与显示区之间背光的差异，进一步改善显示装置的显示效果。\n\n[0089]实施例3\n\n[0090]具体的，请参阅图9，本实施例提供一种显示装置，包括摄像区100以及显示区200。摄像区100包括摄像头11、阻光膜片12、LED芯片13、透明区14以及导光元件15，显示区200包括光学膜层21、显示面板22以及LED灯条23。\n\n[0091]光学膜层21包括第一膜层211、第二膜层212以及第三膜层213，实现对光线的反射、导向以及扩散作用。\n\n[0092]第一膜层211为反射片，起到反射作用，用以将来自LED灯条23的出射光线全部反射后出射，防止光线向下传输，提高光线的利用率。\n\n[0093]第二膜层212设于第一膜层211的上表面，为导光板，起到对光线的导向作用，本实施例中显示装置的背光模组为侧入式背光模组，所以LED灯条23设于光学膜层21的侧面，光线从LED灯条23出射后，进入第二膜层212，即导光板后，光线大部分向上出射，即便有小部分光线从所述导光板的下方出射，也会被位于所述导光板下方的反射片向上反射。还有小部分光线入射到所述导光板与其入光侧相对设置的一侧面，因为这一侧面设有阻光膜片12，所以也不会进一步穿透至摄像区100，一定程度上提高了光线的出射率。\n\n[0094]第三膜层213设于第二膜层212的上表面，第三膜层213为扩散片，使得入射的光线均匀扩散后出射。\n\n[0095]如图4所示，光学膜层12内设有一通孔20，用以放置摄像头等部件。第一通孔201贯穿于第一膜层211，第二通孔202贯穿于第二膜层212，第三通孔203贯穿于第三膜层213，第一通孔201、第二通孔202与第三通孔203相对设置且相互连通。优选的，第一通孔201的内径、第二通孔202的内径与第三通孔203的内径大小相等，使得摄像区100与显示区200之间更易紧密贴合。\n\n[0096]显示面板22包括第一偏光片221、阵列基板222、液晶层223、彩膜基板224以及第二偏光片225。显示面板22实现显示功能。\n\n[0097]第一偏光片221设于第三膜层213的上表面，起到偏光作用。阵列基板222设于第一偏光片221的上表面，为显示装置的电路开关。彩膜基板224设于阵列基板222的上方，与阵列基板222相对设置，彩膜基板224包括RGB色阻、黑色矩阵、隔离柱以及盖板等。液晶层223设于阵列基板222与彩膜基板224之间。第二偏光片225设于彩膜基板224的上表面，起到偏光作用。\n\n[0098]透明区14贯穿于显示面板22，且与所述通孔相对设置，透明区14包括第一透明部141、第二透明部142、第三透明部143、第四透明部144以及第五透明部145。第一透明部141贯穿于第一偏光片221，第一透明部141仍旧具有偏光作用，但其为透明材料，便于光线穿过。第二透明部142贯穿于阵列基板222，第二透明部142依旧具有控制电路开关的作用，但其为透明材料，便于光线穿过。第三透明部143贯穿于液晶层223，第三透明部143依旧具有驱动液晶的作用，但其为可透光部分，便于光线穿过。第四透明部144贯穿于彩膜基板224，第四透明部144内依旧设有黑色矩阵、隔离柱以及盖板等，但没有RGB色阻，因为LED芯片13为彩色LED芯片，依旧可实现滤光功能，但其材质的透明度极高，便于光线穿过。第五透明部145贯穿于第二偏光片225，第五透明部145依旧具有偏光作用，但其为透明材料，便于光线穿过。\n\n[0099]摄像头11设于所述通孔内，如图6所示，摄像头11包括柔性线路板111、连接器112、感光芯片113、滤光元件114、镜片115、支撑柱116、对焦马达117以及镜头118。\n\n[0100]连接器112设于柔性线路板111的一端，用以将柔性线路板111接收到的图像数据向外传输。\n\n[0101]感光芯片113设于柔性线路板111的上表面，感光芯片113为CCD或CMOS结构，用于将镜片115传送过来的光信号转变为电信号，并处理所述电信号，得到相应的图像数据，或者，可与柔性线路板111接收到的图像数据一起处理后再通过连接器112向外传输。\n\n[0102]滤光元件114设于感光芯片113的上方，用以过滤多余的红外光和紫外光。\n\n[0103]镜片115设于滤光元件114的上方，用以采集汇聚光线，可为两个或多个塑料镜片或者玻璃镜片。\n\n[0104]支撑柱116贴附于所述通孔的内侧壁，起到支撑作用，支撑柱116设于柔性线路板111的上表面，且呈环状设于边缘处。\n\n[0105]对焦马达117设于支撑柱116内，用以调整镜片115的位置以获得清晰的图像，即对焦作用。\n\n[0106]镜头118设于镜片115的上方，且安装至支撑柱116，起到保护镜片115的作用。\n\n[0107]阻光膜片12贴附于所述通孔的内侧壁，且设于支撑柱116与光学膜层21之间，起到阻隔或反射光线的作用，防止从LED灯条23处出射的光线进入到摄像头11处。可通过贴付、喷涂、丝印等方式设置阻光涂层或元件，也可以放置挡光铁框等，都能实现阻光作用，摄像区100的俯视图如图10所示。\n\n[0108]LED芯片13安装至支撑柱116的上表面，因为支撑柱116为环状支撑柱，所述LED芯片13也环绕镜头118，均匀分布于支撑柱116上，LED芯片13的亮度均可单独调控，LED芯片13也可通过引线与柔性线路板111或感光元件113等相关控制元件相连接，可以实现LED芯片13与摄像头11的同步控制，即当摄像头11工作时，可控制LED芯片13断电，实现摄像功能；当摄像头11关闭时，可控制LED芯片13通电开始工作，使得摄像区100能正常显示，实现全面屏。\n\n[0109]在本实施例中，第五透明部145无RGB色阻设计，此时第五透明部15的穿透率会大大提升，摄像区100整体的光透过率也会大大提升。LED芯片13为红色Mini-LED131、绿色Mini-LED132、蓝色Mini-LED133中的至少一种，通过提高摄像区100的驱动频率，显示时以FSC的方式实现摄像区100的彩色显示，相对于实施列2中的显示装置，本实施例中的显示装置中摄像区100的整体透过率会有较大提升，但是为支持FSC的驱动模式，面板液晶选择和驱动电路的控制等均需做相应调整。\n\n[0110]导光元件15包覆LED芯片13，导光元件15为透明的，透明度高达90％～100％，导光元件15可为光学膜片、光学膜层或扩散粒子等，使得摄像头11周围的一圈LED芯片13的光线能够均匀地入射到摄像区100的下方，并减小摄像区100与显示区200之间背光的差异。\n\n[0111]当LED芯片13通电时，摄像区100开启背光模式，此时感光芯片113等采光器件处于非工作状态，即不采光，因为摄像区100的透明区14内依旧设有阵列基板、彩膜基板以及液晶层等相关器件，能实现发光显示的功能，摄像区100能正常显示，同时显示区200处于正常显示状态，即实现全面屏效果(参见图1)。\n\n[0112]当LED芯片13断电时，摄像区100关闭背光模式，此时感光芯片113等采光器件处于工作状态，即开始采光，通过LCD驱动调整摄像区100对应液晶(即第三透明部143)全部转变为高透过率状态，搭配第二透明部142和第四透明部144的高透过率设计，外界光线可透过显示面板22进入摄像区100下方对应的摄像头11，实现采光功能，此时显示区200依旧正常显示，由于摄像头11与侧入光学膜层21间有阻光膜片12，因此显示区200的背光不会影响摄像头11的正常采光，摄像头11能正常工作(参见图2)。\n\n[0113]本实施例所述显示装置的技术效果在于，设置屏下摄像头可进一步提升显示装置的屏占比，当LED芯片断电时，摄像区处于采光状态，能正常拍摄，当LED芯片通电时，摄像区处于显示状态，增大显示区域面积的同时，提升用户的体验感。增加一层导光元件，使得摄像头周围的一圈LED芯片的光线能够均匀地入射到摄像区的下方，并减小摄像区与显示区之间背光的差异，进一步改善显示装置的显示效果。彩色LED芯片提高透明区的穿透率，进一步提升摄像区整体的光透过率。\n\n[0114]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0115]以上对本申请实施例所提供的一种显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本发明涉及显示领域，特别涉及一种显示装置。\n\n背景技术\n\n[0002]随着显示技术的不断发展与人们对更佳显示效果的追求，在终端设备的应用中(如手机、Pad等)，高屏占比屏幕已经成为主流趋势，由于终端设备中一些功能器件如摄像头、光线传感器等的采光需求，显示屏幕难以实现最佳的屏占比。\n\n[0003]目前实现高屏占比除了收窄边框外主要是采用刘海屏、水滴屏或挖孔屏方案，但这将牺牲部分屏幕空间且采光器件会直接暴露在屏幕上，现有技术中采用屏下摄像头的方案，摄像头一般是设置于屏幕边缘处或角落处的摄像区，这一区域没有像素单元或光源，不能用于显示影像，影响用户体验。目前市面上也有采用升降式摄像头和滑盖方案的全面屏，但这些方案都需增加额外的模组结构或增加设备厚度且消费体验不是特别理想。LCD是目前显示市场中主流显示技术之一，如何实现真正的LCD全面屏显示值得探索与研究。\n\n发明内容\n\n[0004]本发明的目的在于，解决现有的显示装置因设置屏下摄像头导致摄像区不能显示影像，用户体验较差的技术问题。\n\n[0005]为实现上述目的，本发明提供一种显示装置，包括：光学膜层，包括一通孔；显示面板，设于所述光学膜层一侧的表面；所述显示面板包括一透明区，与所述通孔相对设置；摄像头，包括镜头，插入至所述通孔内，且朝向所述透明区；以及若干LED芯片，环绕所述镜头均匀设于所述通孔内，且设于所述摄像头与所述透明区之间。\n\n[0006]进一步地，所述显示面板包括：阵列基板；彩膜基板，与所述阵列基板相对设置；液晶层，设于所述阵列基板与所述彩膜基板之间；第一偏光片，设于所述阵列基板远离所述彩膜基板一侧的表面；以及第二偏光片，设于所述彩膜基板远离所述阵列基板一侧的表面。\n\n[0007]进一步地，所述透明区包括：第一透明部，位于所述第一偏光片内；第二透明部，位于所述阵列基板内；第三透明部，位于所述液晶层内；第四透明部，位于所述彩膜基板内；以及第五透明部，位于所述第二偏光片内；其中，所述第一透明部、所述第二透明部、所述第三透明部、所述第四透明部以及所述第五透明部相对设置。\n\n[0008]进一步地，所述显示装置还包括阻光膜片，设于所述通孔的内侧壁。\n\n[0009]进一步地，所述光学膜层包括：第一膜层；第二膜层，设于所述第一膜层一侧的表面；第三膜层，设于所述第二膜层远离所述第一膜层一侧的表面。\n\n[0010]进一步地，所述通孔包括：第一通孔，贯穿于所述第一膜层；第二通孔，贯穿于所述第二膜层；以及第三通孔，贯穿于所述第三膜层；其中，所述第一通孔、所述第二通孔以及所述第三通孔相对设置。\n\n[0011]进一步地，所述显示装置还包括导光元件，包覆所述LED芯片。\n\n[0012]进一步地，所述LED芯片为红色Mini-LED、绿色Mini-LED、蓝色Mini-LED中的至少一种。\n\n[0013]进一步地，所述摄像头包括：柔性线路板，其一端连接有连接器；感光芯片，设于所述柔性线路板一侧的表面；滤光元件，设于所述感光芯片远离所述柔性线路板一侧的表面；镜片，设于所述滤光元件远离所述感光芯片的一侧；支撑柱，贴附于所述通孔的内侧壁，环绕所述镜片，且设于所述柔性线路板靠近所述镜片一侧的表面；对焦马达，设于所述支撑柱内；以及镜头，设于所述镜片远离所述滤光元件的一侧，且安装至所述支撑柱；其中，所述LED芯片安装至所述支撑柱。\n\n[0014]进一步地，所述LED芯片电连接至所述柔性线路板。\n\n[0015]本发明的技术效果在于，设置屏下摄像头可进一步提升显示装置的屏占比，当LED芯片断电时，摄像区处于采光状态，能正常拍摄，当LED芯片通电时，摄像区处于显示状态，增大显示区域面积的同时，提升用户的体验感。\n\n附图说明\n\n[0016]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0017]图1为本发明实施例1或2或3所述显示装置中摄像区显示时的状态图；\n\n[0018]图2为本发明实施例1或2或3所述显示装置中摄像区不显示时的状态图；\n\n[0019]图3为本发明实施例1所述显示装置的结构示意图；\n\n[0020]图4为本发明实施例1或2或3所述显示装置未放摄像头的示意图；\n\n[0021]图5为本发明实施例1所述摄像区的俯视图；\n\n[0022]图6为本发明实施例1或2或3所述摄像头的结构示意图；\n\n[0023]图7为本发明实施例2所述显示装置的结构示意图；\n\n[0024]图8为本发明实施例2所述摄像区的俯视图；\n\n[0025]图9为本发明实施例3所述显示装置的结构示意图；\n\n[0026]图10为本发明实施例3所述摄像区的俯视图。\n\n[0027]部分组件标识如下：\n\n[0028]100、摄像区；200、显示区；\n\n[0029]11、摄像头；12、阻光膜片；13、LED芯片；14、透明区；15、导光元件；\n\n[0030]111、柔性线路板；112、连接器；113、感光芯片；114、滤光元件；115、镜片；116、支撑柱；117、对焦马达；118、镜头；\n\n[0031]131、红色Mini-LED；132、绿色Mini-LED；133、蓝色Mini-LED；\n\n[0032]141、第一透明部；142、第二透明部；143、第三透明部；144、第四透明部；145、第五透明部；\n\n[0033]20、通孔；201、第一通孔；202、第二通孔；203、第三通孔；\n\n[0034]21、光学膜层；22、显示面板；23、LED灯条；\n\n[0035]211、第一膜层；212、第二膜层；213、第三膜层；\n\n[0036]221、第一反射片；222、阵列基板；223、液晶层；224、彩膜基板；225、第二反射片。\n\n具体实施方式\n\n[0037]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0038]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0039]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0040]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0041]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0042]实施例1\n\n[0043]具体的，请参阅图1至图6，本实施例提供一种显示装置，包括摄像区100以及显示区200。摄像区100包括摄像头11、阻光膜片12、LED芯片13以及透明区14，显示区200包括光学膜层21、显示面板22以及LED灯条23。\n\n[0044]如图3所示，光学膜层21包括第一膜层211、第二膜层212以及第三膜层213，实现对光线的反射、导向以及扩散作用。\n\n[0045]第一膜层211为反射片，起到反射作用，用以将来自LED灯条23的出射光线全部反射后出射，防止光线向下传输，提高光线的利用率。\n\n[0046]第二膜层212设于第一膜层211的上表面，为导光板，起到对光线的导向作用，本实施例中显示装置的背光模组为侧入式背光模组，所以LED灯条23设于光学膜层21的侧面，光线从LED灯条23出射后，进入第二膜层212，即导光板后，光线大部分向上出射，即便有小部分光线从所述导光板的下方出射，也会被位于所述导光板下方的反射片向上反射。还有小部分光线入射到所述导光板与其入光侧相对设置的一侧面，因为这一侧面设有阻光膜片12，所以也不会进一步穿透至摄像区100，一定程度上提高了光线的出射率。\n\n[0047]第三膜层213设于第二膜层212的上表面，第三膜层213为扩散片，使得入射的光线均匀扩散后出射。\n\n[0048]如图4所示，光学膜层12内设有一通孔20，用以放置摄像头等部件。第一通孔201贯穿于第一膜层211，第二通孔202贯穿于第二膜层212，第三通孔203贯穿于第三膜层213，第一通孔201、第二通孔202与第三通孔203相对设置且相互连通。优选的，第一通孔201的内径、第二通孔202的内径与第三通孔203的内径大小相等，使得摄像区100与显示区200之间更易紧密贴合。\n\n[0049]显示面板22包括第一偏光片221、阵列基板222、液晶层223、彩膜基板224以及第二偏光片225。显示面板22实现显示功能。\n\n[0050]第一偏光片221设于第三膜层213的上表面，起到偏光作用。阵列基板222设于第一偏光片221的上表面，为显示装置的电路开关。彩膜基板224设于阵列基板222的上方，与阵列基板222相对设置，彩膜基板224包括RGB色阻、黑色矩阵、隔离柱以及盖板等。液晶层223设于阵列基板222与彩膜基板224之间。第二偏光片225设于彩膜基板224的上表面，起到偏光作用。\n\n[0051]透明区14贯穿于显示面板22，且与所述通孔相对设置，透明区14包括第一透明部141、第二透明部142、第三透明部143、第四透明部144以及第五透明部145。第一透明部141贯穿于第一偏光片221，第一透明部141仍旧具有偏光作用，但其为透明材料，便于光线穿过。第二透明部142贯穿于阵列基板222，第二透明部142依旧具有控制电路开关的作用，但其为透明材料，便于光线穿过。第三透明部143贯穿于液晶层223，第三透明部143依旧具有驱动液晶的作用，但其为可透光部分，便于光线穿过。第四透明部144贯穿于彩膜基板224，第四透明部144内依旧设有RGB色阻、黑色矩阵、隔离柱以及盖板等，可实现滤光作用，但其材质的透明度极高，便于光线穿过。第五透明部145贯穿于第二偏光片225，第五透明部145依旧具有偏光作用，但其为透明材料，便于光线穿过。\n\n[0052]摄像头11设于所述通孔内，如图6所示，摄像头11包括柔性线路板111、连接器112、感光芯片113、滤光元件114、镜片115、支撑柱116、对焦马达117以及镜头118。\n\n[0053]连接器112设于柔性线路板111的一端，用以将柔性线路板111接收到的图像数据向外传输。\n\n[0054]感光芯片113设于柔性线路板111的上表面，感光芯片113为CCD或CMOS结构，用于将镜片115传送过来的光信号转变为电信号，并处理所述电信号，得到相应的图像数据，或者，可与柔性线路板111接收到的图像数据一起处理后再通过连接器112向外传输。\n\n[0055]滤光元件114设于感光芯片113的上方，用以过滤多余的红外光和紫外光。\n\n[0056]镜片115设于滤光元件114的上方，用以采集汇聚光线，可为两个或多个塑料镜片或者玻璃镜片。\n\n[0057]支撑柱116贴附于所述通孔的内侧壁，起到支撑作用，支撑柱116设于柔性线路板111的上表面，且呈环状设于边缘处。\n\n[0058]对焦马达117设于支撑柱116内，用以调整镜片115的位置以获得清晰的图像，即对焦作用。\n\n[0059]镜头118设于镜片115的上方，且安装至支撑柱116，起到保护镜片115的作用。\n\n[0060]阻光膜片12贴附于所述通孔的内侧壁，且设于支撑柱116与光学膜层21之间，起到阻隔或反射光线的作用，防止从LED灯条23处出射的光线进入到摄像头11处。可通过贴付、喷涂、丝印等方式设置阻光涂层或元件，也可以放置挡光铁框等，都能实现阻光作用，摄像区100的俯视图如图5所示。\n\n[0061]LED芯片13安装至支撑柱116的上表面，因为支撑柱116为环状支撑柱，所述LED芯片13也环绕镜头118，均匀分布于支撑柱116上，LED芯片13也可通过引线与柔性线路板111或感光元件113等相关控制元件相连接，可以实现LED芯片13与摄像头11的同步控制，即当摄像头11工作时，可控制LED芯片13断电，实现摄像功能；当摄像头11关闭时，可控制LED芯片13通电开始工作，使得摄像区100能正常显示，实现全面屏。\n\n[0062]当LED芯片13通电时，摄像区100开启背光模式，此时感光芯片113等采光器件处于非工作状态，即不采光，因为摄像区100的透明区14内依旧设有阵列基板、彩膜基板以及液晶层等相关器件，能实现发光显示的功能，摄像区100能正常显示，同时显示区200处于正常显示状态，即实现全面屏效果(参见图1)。\n\n[0063]当LED芯片13断电时，摄像区100关闭背光模式，此时感光芯片113等采光器件处于工作状态，即开始采光，通过LCD驱动调整摄像区100对应液晶(即第三透明部143)全部转变为高透过率状态，搭配第二透明部142和第四透明部144的高透过率设计，外界光线可透过显示面板22进入摄像区100下方对应的摄像头11，实现采光功能，此时显示区200依旧正常显示，由于摄像头11与侧入光学膜层21间有阻光膜片12，因此显示区200的背光不会影响摄像头11的正常采光，摄像头11能正常工作(参见图2)。\n\n[0064]本实施例所述显示装置的技术效果在于，设置屏下摄像头可进一步提升显示装置的屏占比，当LED芯片断电时，摄像区处于采光状态，能正常拍摄，当LED芯片通电时，摄像区处于显示状态，增大显示区域面积的同时，提升用户的体验感。\n\n[0065]实施例2\n\n[0066]具体的，请参阅图7，本实施例提供一种显示装置，包括摄像区100以及显示区200。摄像区100包括摄像头11、阻光膜片12、LED芯片13、透明区14以及导光元件15，显示区200包括光学膜层21、显示面板22以及LED灯条23。\n\n[0067]光学膜层21包括第一膜层211、第二膜层212以及第三膜层213，实现对光线的反射、导向以及扩散作用。\n\n[0068]第一膜层211为反射片，起到反射作用，用以将来自LED灯条23的出射光线全部反射后出射，防止光线向下传输，提高光线的利用率。\n\n[0069]第二膜层212设于第一膜层211的上表面，为导光板，起到对光线的导向作用，本实施例中显示装置的背光模组为侧入式背光模组，所以LED灯条23设于光学膜层21的侧面，光线从LED灯条23出射后，进入第二膜层212，即导光板后，光线大部分向上出射，即便有小部分光线从所述导光板的下方出射，也会被位于所述导光板下方的反射片向上反射。还有小部分光线入射到所述导光板与其入光侧相对设置的一侧面，因为这一侧面设有阻光膜片12，所以也不会进一步穿透至摄像区100，一定程度上提高了光线的出射率。\n\n[0070]第三膜层213设于第二膜层212的上表面，第三膜层213为扩散片，使得入射的光线均匀扩散后出射。\n\n[0071]如图4所示，光学膜层12内设有一通孔20，用以放置摄像头等部件。第一通孔201贯穿于第一膜层211，第二通孔202贯穿于第二膜层212，第三通孔203贯穿于第三膜层213，第一通孔201、第二通孔202与第三通孔203相对设置且相互连通。优选的，第一通孔201的内径、第二通孔202的内径与第三通孔203的内径大小相等，使得摄像区100与显示区200之间更易紧密贴合。\n\n[0072]显示面板22包括第一偏光片221、阵列基板222、液晶层223、彩膜基板224以及第二偏光片225。显示面板22实现显示功能。\n\n[0073]第一偏光片221设于第三膜层213的上表面，起到偏光作用。阵列基板222设于第一偏光片221的上表面，为显示装置的电路开关。彩膜基板224设于阵列基板222的上方，与阵列基板222相对设置，彩膜基板224包括RGB色阻、黑色矩阵、隔离柱以及盖板等。液晶层223设于阵列基板222与彩膜基板224之间。第二偏光片225设于彩膜基板224的上表面，起到偏光作用。\n\n[0074]透明区14贯穿于显示面板22，且与所述通孔相对设置，透明区14包括第一透明部141、第二透明部142、第三透明部143、第四透明部144以及第五透明部145。第一透明部141贯穿于第一偏光片221，第一透明部141仍旧具有偏光作用，但其为透明材料，便于光线穿过。第二透明部142贯穿于阵列基板222，第二透明部142依旧具有控制电路开关的作用，但其为透明材料，便于光线穿过。第三透明部143贯穿于液晶层223，第三透明部143依旧具有驱动液晶的作用，但其为可透光部分，便于光线穿过。第四透明部144贯穿于彩膜基板224，第四透明部144内依旧设有RGB色阻、黑色矩阵、隔离柱以及盖板等，可实现滤光作用，但其材质的透明度极高，便于光线穿过。第五透明部145贯穿于第二偏光片225，第五透明部145依旧具有偏光作用，但其为透明材料，便于光线穿过。\n\n[0075]摄像头11设于所述通孔内，如图6所示，摄像头11包括柔性线路板111、连接器112、感光芯片113、滤光元件114、镜片115、支撑柱116、对焦马达117以及镜头118。\n\n[0076]连接器112设于柔性线路板111的一端，用以将柔性线路板111接收到的图像数据向外传输。\n\n[0077]感光芯片113设于柔性线路板111的上表面，感光芯片113为CCD或CMOS结构，用于将镜片115传送过来的光信号转变为电信号，并处理所述电信号，得到相应的图像数据，或者，可与柔性线路板111接收到的图像数据一起处理后再通过连接器112向外传输。\n\n[0078]滤光元件114设于感光芯片113的上方，用以过滤多余的红外光和紫外光。\n\n[0079]镜片115设于滤光元件114的上方，用以采集汇聚光线，可为两个或多个塑料镜片或者玻璃镜片。\n\n[0080]支撑柱116贴附于所述通孔的内侧壁，起到支撑作用，支撑柱116设于柔性线路板111的上表面，且呈环状设于边缘处。\n\n[0081]对焦马达117设于支撑柱116内，用以调整镜片115的位置以获得清晰的图像，即对焦作用。\n\n[0082]镜头118设于镜片115的上方，且安装至支撑柱116，起到保护镜片115的作用。\n\n[0083]阻光膜片12贴附于所述通孔的内侧壁，且设于支撑柱116与光学膜层21之间，起到阻隔或反射光线的作用，防止从LED灯条23处出射的光线进入到摄像头11处。可通过贴付、喷涂、丝印等方式设置阻光涂层或元件，也可以放置挡光铁框等，都能实现阻光作用，摄像区100的俯视图如图8所示。\n\n[0084]LED芯片13安装至支撑柱116的上表面，因为支撑柱116为环状支撑柱，所述LED芯片13也环绕镜头118，均匀分布于支撑柱116上，LED芯片13的亮度均可单独调控，LED芯片13也可通过引线与柔性线路板111或感光元件113等相关控制元件相连接，可以实现LED芯片13与摄像头11的同步控制，即当摄像头11工作时，可控制LED芯片13断电，实现摄像功能；当摄像头11关闭时，可控制LED芯片13通电开始工作，使得摄像区100能正常显示，实现全面屏。\n\n[0085]导光元件15包覆LED芯片13，导光元件15为透明的，透明度高达90％～100％，导光元件15可为光学膜片、光学膜层或扩散粒子等，使得摄像头11周围的一圈LED芯片13的光线能够均匀地入射到摄像区100的下方，并减小摄像区100与显示区200之间背光的差异。\n\n[0086]当LED芯片13通电时，摄像区100开启背光模式，此时感光芯片113等采光器件处于非工作状态，即不采光，因为摄像区100的透明区14内依旧设有阵列基板、彩膜基板以及液晶层等相关器件，能实现发光显示的功能，摄像区100能正常显示，同时显示区200处于正常显示状态，即实现全面屏效果(参见图1)。\n\n[0087]当LED芯片13断电时，摄像区100关闭背光模式，此时感光芯片113等采光器件处于工作状态，即开始采光，通过LCD驱动调整摄像区100对应液晶(即第三透明部143)全部转变为高透过率状态，搭配第二透明部142和第四透明部144的高透过率设计，外界光线可透过显示面板22进入摄像区100下方对应的摄像头11，实现采光功能，此时显示区200依旧正常显示，由于摄像头11与侧入光学膜层21间有阻光膜片12，因此显示区200的背光不会影响摄像头11的正常采光，摄像头11能正常工作(参见图2)。\n\n[0088]本实施例所述显示装置的技术效果在于，设置屏下摄像头可进一步提升显示装置的屏占比，当LED芯片断电时，摄像区处于采光状态，能正常拍摄，当LED芯片通电时，摄像区处于显示状态，增大显示区域面积的同时，提升用户的体验感。增加一层导光元件，使得摄像头周围的一圈LED芯片的光线能够均匀地入射到摄像区的下方，并减小摄像区与显示区之间背光的差异，进一步改善显示装置的显示效果。\n\n[0089]实施例3\n\n[0090]具体的，请参阅图9，本实施例提供一种显示装置，包括摄像区100以及显示区200。摄像区100包括摄像头11、阻光膜片12、LED芯片13、透明区14以及导光元件15，显示区200包括光学膜层21、显示面板22以及LED灯条23。\n\n[0091]光学膜层21包括第一膜层211、第二膜层212以及第三膜层213，实现对光线的反射、导向以及扩散作用。\n\n[0092]第一膜层211为反射片，起到反射作用，用以将来自LED灯条23的出射光线全部反射后出射，防止光线向下传输，提高光线的利用率。\n\n[0093]第二膜层212设于第一膜层211的上表面，为导光板，起到对光线的导向作用，本实施例中显示装置的背光模组为侧入式背光模组，所以LED灯条23设于光学膜层21的侧面，光线从LED灯条23出射后，进入第二膜层212，即导光板后，光线大部分向上出射，即便有小部分光线从所述导光板的下方出射，也会被位于所述导光板下方的反射片向上反射。还有小部分光线入射到所述导光板与其入光侧相对设置的一侧面，因为这一侧面设有阻光膜片12，所以也不会进一步穿透至摄像区100，一定程度上提高了光线的出射率。\n\n[0094]第三膜层213设于第二膜层212的上表面，第三膜层213为扩散片，使得入射的光线均匀扩散后出射。\n\n[0095]如图4所示，光学膜层12内设有一通孔20，用以放置摄像头等部件。第一通孔201贯穿于第一膜层211，第二通孔202贯穿于第二膜层212，第三通孔203贯穿于第三膜层213，第一通孔201、第二通孔202与第三通孔203相对设置且相互连通。优选的，第一通孔201的内径、第二通孔202的内径与第三通孔203的内径大小相等，使得摄像区100与显示区200之间更易紧密贴合。\n\n[0096]显示面板22包括第一偏光片221、阵列基板222、液晶层223、彩膜基板224以及第二偏光片225。显示面板22实现显示功能。\n\n[0097]第一偏光片221设于第三膜层213的上表面，起到偏光作用。阵列基板222设于第一偏光片221的上表面，为显示装置的电路开关。彩膜基板224设于阵列基板222的上方，与阵列基板222相对设置，彩膜基板224包括RGB色阻、黑色矩阵、隔离柱以及盖板等。液晶层223设于阵列基板222与彩膜基板224之间。第二偏光片225设于彩膜基板224的上表面，起到偏光作用。\n\n[0098]透明区14贯穿于显示面板22，且与所述通孔相对设置，透明区14包括第一透明部141、第二透明部142、第三透明部143、第四透明部144以及第五透明部145。第一透明部141贯穿于第一偏光片221，第一透明部141仍旧具有偏光作用，但其为透明材料，便于光线穿过。第二透明部142贯穿于阵列基板222，第二透明部142依旧具有控制电路开关的作用，但其为透明材料，便于光线穿过。第三透明部143贯穿于液晶层223，第三透明部143依旧具有驱动液晶的作用，但其为可透光部分，便于光线穿过。第四透明部144贯穿于彩膜基板224，第四透明部144内依旧设有黑色矩阵、隔离柱以及盖板等，但没有RGB色阻，因为LED芯片13为彩色LED芯片，依旧可实现滤光功能，但其材质的透明度极高，便于光线穿过。第五透明部145贯穿于第二偏光片225，第五透明部145依旧具有偏光作用，但其为透明材料，便于光线穿过。\n\n[0099]摄像头11设于所述通孔内，如图6所示，摄像头11包括柔性线路板111、连接器112、感光芯片113、滤光元件114、镜片115、支撑柱116、对焦马达117以及镜头118。\n\n[0100]连接器112设于柔性线路板111的一端，用以将柔性线路板111接收到的图像数据向外传输。\n\n[0101]感光芯片113设于柔性线路板111的上表面，感光芯片113为CCD或CMOS结构，用于将镜片115传送过来的光信号转变为电信号，并处理所述电信号，得到相应的图像数据，或者，可与柔性线路板111接收到的图像数据一起处理后再通过连接器112向外传输。\n\n[0102]滤光元件114设于感光芯片113的上方，用以过滤多余的红外光和紫外光。\n\n[0103]镜片115设于滤光元件114的上方，用以采集汇聚光线，可为两个或多个塑料镜片或者玻璃镜片。\n\n[0104]支撑柱116贴附于所述通孔的内侧壁，起到支撑作用，支撑柱116设于柔性线路板111的上表面，且呈环状设于边缘处。\n\n[0105]对焦马达117设于支撑柱116内，用以调整镜片115的位置以获得清晰的图像，即对焦作用。\n\n[0106]镜头118设于镜片115的上方，且安装至支撑柱116，起到保护镜片115的作用。\n\n[0107]阻光膜片12贴附于所述通孔的内侧壁，且设于支撑柱116与光学膜层21之间，起到阻隔或反射光线的作用，防止从LED灯条23处出射的光线进入到摄像头11处。可通过贴付、喷涂、丝印等方式设置阻光涂层或元件，也可以放置挡光铁框等，都能实现阻光作用，摄像区100的俯视图如图10所示。\n\n[0108]LED芯片13安装至支撑柱116的上表面，因为支撑柱116为环状支撑柱，所述LED芯片13也环绕镜头118，均匀分布于支撑柱116上，LED芯片13的亮度均可单独调控，LED芯片13也可通过引线与柔性线路板111或感光元件113等相关控制元件相连接，可以实现LED芯片13与摄像头11的同步控制，即当摄像头11工作时，可控制LED芯片13断电，实现摄像功能；当摄像头11关闭时，可控制LED芯片13通电开始工作，使得摄像区100能正常显示，实现全面屏。\n\n[0109]在本实施例中，第五透明部145无RGB色阻设计，此时第五透明部15的穿透率会大大提升，摄像区100整体的光透过率也会大大提升。LED芯片13为红色Mini-LED131、绿色Mini-LED132、蓝色Mini-LED133中的至少一种，通过提高摄像区100的驱动频率，显示时以FSC的方式实现摄像区100的彩色显示，相对于实施列2中的显示装置，本实施例中的显示装置中摄像区100的整体透过率会有较大提升，但是为支持FSC的驱动模式，面板液晶选择和驱动电路的控制等均需做相应调整。\n\n[0110]导光元件15包覆LED芯片13，导光元件15为透明的，透明度高达90％～100％，导光元件15可为光学膜片、光学膜层或扩散粒子等，使得摄像头11周围的一圈LED芯片13的光线能够均匀地入射到摄像区100的下方，并减小摄像区100与显示区200之间背光的差异。\n\n[0111]当LED芯片13通电时，摄像区100开启背光模式，此时感光芯片113等采光器件处于非工作状态，即不采光，因为摄像区100的透明区14内依旧设有阵列基板、彩膜基板以及液晶层等相关器件，能实现发光显示的功能，摄像区100能正常显示，同时显示区200处于正常显示状态，即实现全面屏效果(参见图1)。\n\n[0112]当LED芯片13断电时，摄像区100关闭背光模式，此时感光芯片113等采光器件处于工作状态，即开始采光，通过LCD驱动调整摄像区100对应液晶(即第三透明部143)全部转变为高透过率状态，搭配第二透明部142和第四透明部144的高透过率设计，外界光线可透过显示面板22进入摄像区100下方对应的摄像头11，实现采光功能，此时显示区200依旧正常显示，由于摄像头11与侧入光学膜层21间有阻光膜片12，因此显示区200的背光不会影响摄像头11的正常采光，摄像头11能正常工作(参见图2)。\n\n[0113]本实施例所述显示装置的技术效果在于，设置屏下摄像头可进一步提升显示装置的屏占比，当LED芯片断电时，摄像区处于采光状态，能正常拍摄，当LED芯片通电时，摄像区处于显示状态，增大显示区域面积的同时，提升用户的体验感。增加一层导光元件，使得摄像头周围的一圈LED芯片的光线能够均匀地入射到摄像区的下方，并减小摄像区与显示区之间背光的差异，进一步改善显示装置的显示效果。彩色LED芯片提高透明区的穿透率，进一步提升摄像区整体的光透过率。\n\n[0114]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0115]以上对本申请实施例所提供的一种显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10765, 23819, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种MiniLED背光基板的切割方法、MiniLED背光基板及其MiniLED基板。\n\n背景技术\n\n[0002]随着有机发光二极管(OLED，Organic Light-Emitting Diode)技术的兴起及日渐成熟，OLED的产品逐渐成为市场新宠，相对而言，薄膜晶体管液晶显示器(TFT-LCD，ThinFilm TransistorLiquid Crystal Display)在各方面性能上都较OLED技术都有一定的差距。为了更好的提升LCD显示性能，特别是在对比度这一块领域赶超OLED技术，同时又保留LCD的价格及可靠性优势，MiniLED背光应运而生。利用局部背光调节(Local dimming)，一种区域控光技术，控制搭配有MiniLED背光的8K LCD面板，将是LCD反攻OLED的最强之矛，其同时拥有高峰值亮度、高对比度、低功耗、高可靠性等优势。\n\n[0003]对于MiniLED背光基板而言，目前常规的手段是在玻璃基板上沉积各膜层，制备成TFT作为开关，由于MiniLED基板本身只作为背光的一部分存在，只需利用TFT来实现分区亮与暗的控制，而不需要具体的灰阶表现，因此并不需要液晶等材料，也没有所谓的成盒步骤。在成膜后会切割成小板，然后进行LED灯的打件，最终形成背光中最重要的基板构件。在这种情况下，MiniLED的基板在进入切割制程时，其膜面完全暴露在环境当中。一方面，切割过程中有磨边清洗等过程，水的作用会对裸露的铜板造成腐蚀，导致电性异常；另一方面，切割的洁净度较差，切割过程中会存在大量的玻璃碎屑，这些碎屑极容易划伤膜面，对产品造成批量性的异常。此外，由于LCD技术中的切割段一般对应的都是合板(上下两板贴合)的玻璃，因此在制程上机台也较难保证切割准确性。\n\n[0004]由于MiniLED技术较为先进，因此相关的报告较少，目前已知对于膜面的保护有在基板的表面涂覆一层较厚的保护膜，然后在切割制程后进行膜层剥离，这种方法由于是整面涂覆保护膜，且厚度较大，会使切割制程受到保护膜的影响，除此之外，本身切割段的机台对应的都是成盒后的玻璃基板，因此MiniLED基板在切割段需要更改机台才能相对应。\n\n发明内容\n\n[0005]本发明的目的在于提供一种MiniLED背光基板的切割方法，使用所述MiniLED背光基板的切割方法可以有效解决MiniLED基板在切割制程中膜面受损及金属板腐蚀的问题，且所述MiniLED背光基板的切割方法简单易行。\n\n[0006]本发明的目的在于提供一种MiniLED背光基板及其MiniLED基板，所述MiniLED背光基板及其MiniLED基板使用了上述的MiniLED背光基板的切割方法而制成，有效的保护MiniLED基板表面不受水汽腐蚀，避免膜面划伤及静电风险，同时确保切割制程可行性。\n\n[0007]本申请实施例提供一种MiniLED背光基板的切割方法，包括以下步骤：\n\n[0008]步骤S1、将成膜完成后的MiniLED背光基板，进行成盒制程；\n\n[0009]步骤S2、将成盒后的所述MiniLED背光基板进行切割，制备出小板MiniLED背光基板；\n\n[0010]步骤S3、将所述小板MiniLED背光基板进行去盒处理；\n\n[0011]步骤S4、将去盒后的所述小板MiniLED背光基板进行打包。\n\n[0012]根据本发明实施例所提供的MiniLED背光基板的切割方法，在所述步骤S1中，所述成盒制程包括：涂覆框胶于所述MiniLED背光基板的上板外围，将玻璃贴合在所述MiniLED背光基板的上板上，以及固化所述框胶。\n\n[0013]根据本发明实施例所提供的MiniLED背光基板的切割方法，所述玻璃为常规素玻璃。\n\n[0014]根据本发明实施例所提供的MiniLED背光基板的切割方法，所述框胶为热熔胶。\n\n[0015]根据本发明实施例所提供的MiniLED背光基板的切割方法，所述成盒制程中，贴合玻璃在所述MiniLED背光基板的上板上为真空贴合。\n\n[0016]根据本发明实施例所提供的MiniLED背光基板的切割方法，在所述步骤3中，所述去盒处理包括：将所述小板MiniLED背光基板进行加热，使所述热熔胶融化。\n\n[0017]根据本发明实施例所提供的MiniLED背光基板的切割方法，在所述步骤3中，所述去盒处理还包括：用吸盘吸附所述小板MiniLED背光基板的上板，去除上板。\n\n[0018]本发明实施例还提供了一种MiniLED背光基板，所述MiniLED背光基板由上述实施例所提供的MiniLED背光基板的切割方法切割而成。\n\n[0019]根据本发明实施例所提供的MiniLED背光基板，所述MiniLED背光基板包括：玻璃基板、薄膜晶体管。\n\n[0020]本发明实施例还提供了一种MiniLED基板，所述MiniLED基板由上述实施例所提供的的MiniLED背光基板的切割方法切割而成的MiniLED背光基板经过加装LED制程而制作形成。\n\n[0021]本发明的有益效果为：本发明提供的MiniLED背光基板的切割方法，通过增加成盒的制程，可以有效的确保MiniLED背光基板的膜面受到保护，同时又可以避免水汽等进入大板，对金属的表面进行腐蚀。除此之外，由于是在合板的情况下进行的切割，机台不需要进行改造就能对应制程。而将框胶改成热熔胶，是为了在切割后可以更好的进行上板和下板的脱离，完成最终小板MiniLED背光基板的产出。\n\n附图说明\n\n[0022]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0023]图1为为本发明实施例所提供的MiniLED背光基板的切割方法的流程示意图。\n\n具体实施方式\n\n[0024]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0025]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0026]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0027]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0028]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0029]在目前的MiniLED背光基板在成膜后直接进行切割，会存在以下问题，如：MiniLED背光基板的膜层表面会完全裸露出来，存在比较大的划伤以及静电释放的风险；常规的切割制成对应的都是合板成盒的参数，而MiniLED背光基板没有成盒，因此切割精度以及破片的风险无法保证；以及在环境中的水汽等可能会造成铜板的腐蚀，使LED灯的线路失效。因此本发明提供一种MiniLED背光基板的切割方法，使用所述MiniLED背光基板的切割方法可以有效解决MiniLED基板在切割制程中膜面受损及金属板腐蚀的问题，且所述MiniLED背光基板的切割方法简单易行。\n\n[0030]如图1所示，为本发明实施例所提供的MiniLED背光基板的切割方法的流程示意图。本实施例提供一种MiniLED背光基板的切割方法，包括以下步骤：\n\n[0031]步骤S1、将成膜完成后的MiniLED背光基板，进行成盒制程；\n\n[0032]步骤S2、将成盒后的所述MiniLED背光基板进行切割，制备出小板MiniLED背光基板；\n\n[0033]步骤S3、将所述小板MiniLED背光基板进行去盒处理；\n\n[0034]步骤S4、将去盒后的所述小板MiniLED背光基板进行打包，并进行后续制程。\n\n[0035]其中，具体地，本发明实施例所提供的MiniLED背光基板的切割方法，在大板的MiniLED背光基板完成了成膜制程后，便进行如常规产品一样的成盒制程。在所述步骤S1中，所述成盒制程包括：涂覆框胶于所述MiniLED背光基板的上板外围，将玻璃贴合在所述MiniLED背光基板的上板上，以及固化所述框胶。其中，在成盒制程中，所述玻璃为常规素玻璃。使用常规的素玻璃是为了节约成本，所述MiniLED背光基板在成盒、切割后便会去除所述素玻璃。所述框胶为热熔胶，使用热熔胶来替代普通框胶，所述热熔胶在加热后会失去粘性，便于所述素玻璃的剥离。在所述成盒制程中，贴合玻璃在所述MiniLED背光基板的上板上为真空贴合。即在成盒制程中，只贴合所述素玻璃而不进行液晶的滴入。\n\n[0036]在所述步骤2中，对经过真空贴合后的基板进行切割，因为此时所述MiniLED背光基板为合板成盒状态，因此，切割流程可以依据常规的切割制程，制备出小板MiniLED背光基板。\n\n[0037]在所述步骤3中，所述去盒处理包括：将所述小板MiniLED背光基板进行加热，使所述热熔胶融化。在所述步骤3中，所述去盒处理还包括：用吸盘吸附所述小板MiniLED背光基板的上板，去除上板，保留下板。\n\n[0038]在所述步骤4中，对切割后的膜面完好的所述小板MiniLED背光基板进行打包，并进行后续制程。\n\n[0039]本发明实施例还提供了一种MiniLED背光基板，所述MiniLED背光基板由本实施例中所述的MiniLED背光基板的切割方法切割而成。其中，所述MiniLED背光基板还包括：玻璃基板、薄膜晶体管等器件。\n\n[0040]本实施例还提供了一种MiniLED基板，所述MiniLED基板由本实施例中所述的MiniLED背光基板的切割方法切割而成的MiniLED背光基板经过加装LED等制程而制作形成，最终形成液晶显示面板背光结构中最重要的基板构件。\n\n[0041]本发明提供的MiniLED背光基板的切割方法，通过增加成盒的制程，可以有效的确保MiniLED背光基板的膜面受到保护，同时又可以避免水汽等进入大板，对金属的表面进行腐蚀。除此之外，由于是在合板的情况下进行的切割，机台不需要进行改造就能对应制程。而将框胶改成热熔胶，是为了在切割后可以更好的进行上板和下板的脱离，完成最终小板MiniLED背光基板的产出。本发明提供的MiniLED背光基板及其MiniLED基板运用了上述MiniLED背光基板的切割方法，在MiniLED背光基板增加一层上板，经过成盒制程，将所述MiniLED背光基板的整个膜层保护起来，在进行切割制程，提高了MiniLED背光基板及其MiniLED基板的良率，节约了成本，大大提升了生产效率。\n\n[0042]以上对本申请实施例所提供的一种MiniLED背光基板的切割方法、MiniLED背光基板及其MiniLED基板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种MiniLED背光基板的切割方法、MiniLED背光基板及其MiniLED基板。\n\n背景技术\n\n[0002]随着有机发光二极管(OLED，Organic Light-Emitting Diode)技术的兴起及日渐成熟，OLED的产品逐渐成为市场新宠，相对而言，薄膜晶体管液晶显示器(TFT-LCD，ThinFilm TransistorLiquid Crystal Display)在各方面性能上都较OLED技术都有一定的差距。为了更好的提升LCD显示性能，特别是在对比度这一块领域赶超OLED技术，同时又保留LCD的价格及可靠性优势，MiniLED背光应运而生。利用局部背光调节(Local dimming)，一种区域控光技术，控制搭配有MiniLED背光的8K LCD面板，将是LCD反攻OLED的最强之矛，其同时拥有高峰值亮度、高对比度、低功耗、高可靠性等优势。\n\n[0003]对于MiniLED背光基板而言，目前常规的手段是在玻璃基板上沉积各膜层，制备成TFT作为开关，由于MiniLED基板本身只作为背光的一部分存在，只需利用TFT来实现分区亮与暗的控制，而不需要具体的灰阶表现，因此并不需要液晶等材料，也没有所谓的成盒步骤。在成膜后会切割成小板，然后进行LED灯的打件，最终形成背光中最重要的基板构件。在这种情况下，MiniLED的基板在进入切割制程时，其膜面完全暴露在环境当中。一方面，切割过程中有磨边清洗等过程，水的作用会对裸露的铜板造成腐蚀，导致电性异常；另一方面，切割的洁净度较差，切割过程中会存在大量的玻璃碎屑，这些碎屑极容易划伤膜面，对产品造成批量性的异常。此外，由于LCD技术中的切割段一般对应的都是合板(上下两板贴合)的玻璃，因此在制程上机台也较难保证切割准确性。\n\n[0004]由于MiniLED技术较为先进，因此相关的报告较少，目前已知对于膜面的保护有在基板的表面涂覆一层较厚的保护膜，然后在切割制程后进行膜层剥离，这种方法由于是整面涂覆保护膜，且厚度较大，会使切割制程受到保护膜的影响，除此之外，本身切割段的机台对应的都是成盒后的玻璃基板，因此MiniLED基板在切割段需要更改机台才能相对应。\n\n发明内容\n\n[0005]本发明的目的在于提供一种MiniLED背光基板的切割方法，使用所述MiniLED背光基板的切割方法可以有效解决MiniLED基板在切割制程中膜面受损及金属板腐蚀的问题，且所述MiniLED背光基板的切割方法简单易行。\n\n[0006]本发明的目的在于提供一种MiniLED背光基板及其MiniLED基板，所述MiniLED背光基板及其MiniLED基板使用了上述的MiniLED背光基板的切割方法而制成，有效的保护MiniLED基板表面不受水汽腐蚀，避免膜面划伤及静电风险，同时确保切割制程可行性。\n\n[0007]本申请实施例提供一种MiniLED背光基板的切割方法，包括以下步骤：\n\n[0008]步骤S1、将成膜完成后的MiniLED背光基板，进行成盒制程；\n\n[0009]步骤S2、将成盒后的所述MiniLED背光基板进行切割，制备出小板MiniLED背光基板；\n\n[0010]步骤S3、将所述小板MiniLED背光基板进行去盒处理；\n\n[0011]步骤S4、将去盒后的所述小板MiniLED背光基板进行打包。\n\n[0012]根据本发明实施例所提供的MiniLED背光基板的切割方法，在所述步骤S1中，所述成盒制程包括：涂覆框胶于所述MiniLED背光基板的上板外围，将玻璃贴合在所述MiniLED背光基板的上板上，以及固化所述框胶。\n\n[0013]根据本发明实施例所提供的MiniLED背光基板的切割方法，所述玻璃为常规素玻璃。\n\n[0014]根据本发明实施例所提供的MiniLED背光基板的切割方法，所述框胶为热熔胶。\n\n[0015]根据本发明实施例所提供的MiniLED背光基板的切割方法，所述成盒制程中，贴合玻璃在所述MiniLED背光基板的上板上为真空贴合。\n\n[0016]根据本发明实施例所提供的MiniLED背光基板的切割方法，在所述步骤3中，所述去盒处理包括：将所述小板MiniLED背光基板进行加热，使所述热熔胶融化。\n\n[0017]根据本发明实施例所提供的MiniLED背光基板的切割方法，在所述步骤3中，所述去盒处理还包括：用吸盘吸附所述小板MiniLED背光基板的上板，去除上板。\n\n[0018]本发明实施例还提供了一种MiniLED背光基板，所述MiniLED背光基板由上述实施例所提供的MiniLED背光基板的切割方法切割而成。\n\n[0019]根据本发明实施例所提供的MiniLED背光基板，所述MiniLED背光基板包括：玻璃基板、薄膜晶体管。\n\n[0020]本发明实施例还提供了一种MiniLED基板，所述MiniLED基板由上述实施例所提供的的MiniLED背光基板的切割方法切割而成的MiniLED背光基板经过加装LED制程而制作形成。\n\n[0021]本发明的有益效果为：本发明提供的MiniLED背光基板的切割方法，通过增加成盒的制程，可以有效的确保MiniLED背光基板的膜面受到保护，同时又可以避免水汽等进入大板，对金属的表面进行腐蚀。除此之外，由于是在合板的情况下进行的切割，机台不需要进行改造就能对应制程。而将框胶改成热熔胶，是为了在切割后可以更好的进行上板和下板的脱离，完成最终小板MiniLED背光基板的产出。\n\n附图说明\n\n[0022]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0023]图1为为本发明实施例所提供的MiniLED背光基板的切割方法的流程示意图。\n\n具体实施方式\n\n[0024]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0025]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0026]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0027]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0028]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0029]在目前的MiniLED背光基板在成膜后直接进行切割，会存在以下问题，如：MiniLED背光基板的膜层表面会完全裸露出来，存在比较大的划伤以及静电释放的风险；常规的切割制成对应的都是合板成盒的参数，而MiniLED背光基板没有成盒，因此切割精度以及破片的风险无法保证；以及在环境中的水汽等可能会造成铜板的腐蚀，使LED灯的线路失效。因此本发明提供一种MiniLED背光基板的切割方法，使用所述MiniLED背光基板的切割方法可以有效解决MiniLED基板在切割制程中膜面受损及金属板腐蚀的问题，且所述MiniLED背光基板的切割方法简单易行。\n\n[0030]如图1所示，为本发明实施例所提供的MiniLED背光基板的切割方法的流程示意图。本实施例提供一种MiniLED背光基板的切割方法，包括以下步骤：\n\n[0031]步骤S1、将成膜完成后的MiniLED背光基板，进行成盒制程；\n\n[0032]步骤S2、将成盒后的所述MiniLED背光基板进行切割，制备出小板MiniLED背光基板；\n\n[0033]步骤S3、将所述小板MiniLED背光基板进行去盒处理；\n\n[0034]步骤S4、将去盒后的所述小板MiniLED背光基板进行打包，并进行后续制程。\n\n[0035]其中，具体地，本发明实施例所提供的MiniLED背光基板的切割方法，在大板的MiniLED背光基板完成了成膜制程后，便进行如常规产品一样的成盒制程。在所述步骤S1中，所述成盒制程包括：涂覆框胶于所述MiniLED背光基板的上板外围，将玻璃贴合在所述MiniLED背光基板的上板上，以及固化所述框胶。其中，在成盒制程中，所述玻璃为常规素玻璃。使用常规的素玻璃是为了节约成本，所述MiniLED背光基板在成盒、切割后便会去除所述素玻璃。所述框胶为热熔胶，使用热熔胶来替代普通框胶，所述热熔胶在加热后会失去粘性，便于所述素玻璃的剥离。在所述成盒制程中，贴合玻璃在所述MiniLED背光基板的上板上为真空贴合。即在成盒制程中，只贴合所述素玻璃而不进行液晶的滴入。\n\n[0036]在所述步骤2中，对经过真空贴合后的基板进行切割，因为此时所述MiniLED背光基板为合板成盒状态，因此，切割流程可以依据常规的切割制程，制备出小板MiniLED背光基板。\n\n[0037]在所述步骤3中，所述去盒处理包括：将所述小板MiniLED背光基板进行加热，使所述热熔胶融化。在所述步骤3中，所述去盒处理还包括：用吸盘吸附所述小板MiniLED背光基板的上板，去除上板，保留下板。\n\n[0038]在所述步骤4中，对切割后的膜面完好的所述小板MiniLED背光基板进行打包，并进行后续制程。\n\n[0039]本发明实施例还提供了一种MiniLED背光基板，所述MiniLED背光基板由本实施例中所述的MiniLED背光基板的切割方法切割而成。其中，所述MiniLED背光基板还包括：玻璃基板、薄膜晶体管等器件。\n\n[0040]本实施例还提供了一种MiniLED基板，所述MiniLED基板由本实施例中所述的MiniLED背光基板的切割方法切割而成的MiniLED背光基板经过加装LED等制程而制作形成，最终形成液晶显示面板背光结构中最重要的基板构件。\n\n[0041]本发明提供的MiniLED背光基板的切割方法，通过增加成盒的制程，可以有效的确保MiniLED背光基板的膜面受到保护，同时又可以避免水汽等进入大板，对金属的表面进行腐蚀。除此之外，由于是在合板的情况下进行的切割，机台不需要进行改造就能对应制程。而将框胶改成热熔胶，是为了在切割后可以更好的进行上板和下板的脱离，完成最终小板MiniLED背光基板的产出。本发明提供的MiniLED背光基板及其MiniLED基板运用了上述MiniLED背光基板的切割方法，在MiniLED背光基板增加一层上板，经过成盒制程，将所述MiniLED背光基板的整个膜层保护起来，在进行切割制程，提高了MiniLED背光基板及其MiniLED基板的良率，节约了成本，大大提升了生产效率。\n\n[0042]以上对本申请实施例所提供的一种MiniLED背光基板的切割方法、MiniLED背光基板及其MiniLED基板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10766, 23820, '技术领域\n\n[0001]本申请涉及显示领域，尤其涉及一种显示面板及其制作方法、显示装置。\n\n背景技术\n\n[0002]Micro-LED(Micro Light Emitting Diode，微型发光二极管)是将传统发光二极管芯片尺寸微缩至100微米以下，然后通过转移技术，将红绿蓝三色芯片批量式转移至薄膜晶体管驱动电路背板上形成阵列结构，芯片的正负极与背板源极和漏极连接，红绿蓝像素经由电路控制其亮暗程度达到全彩显示的目。Micro-LED具有自发光、不易受水汽、氧气或高温影响等优点。\n\n[0003]现有技术中，Micro-LED在应用大屏幕甚至超大屏幕(例如大于100平方米)时，由于Micro-LED显示面板的的边框较大，屏幕单元拼接时会留有较大的黑色非发光区，影响用户视觉体验。\n\n[0004]因此，亟需一种显示面板以解决上述技术问题。\n\n发明内容\n\n[0005]本申请提供了一种显示面板及其制作方法、显示装置，以解决大屏拼接时，留有较大的黑色非发光区的技术问题。\n\n[0006]为解决上述问题，本申请提供的技术方案如下：\n\n[0007]一种显示面板，包括：\n\n[0008]第一基板，包括第一衬底、位于所述第一衬底上的第一电源线层、位于所述第一电源线层上的至少一发光器件，所述第一电源线层包括：\n\n[0009]位于所述第一衬底的第一边缘的第一引线；\n\n[0010]位于所述第一衬底的第二边缘的第二引线；\n\n[0011]第二基板，位于所述第一基板远离所述发光器件的一侧，包括第二衬底、位于所述第二衬底远离所述发光器件一侧的第二电源线层，所述第二电源线层包括：\n\n[0012]第一扇出走线区，包括第一扇出走线以及位于所述第二基板的第三边缘的第三引线；\n\n[0013]第二扇出走线区，包括第二扇出走线以及位于所述第二基板的第四边缘的第四引线；\n\n[0014]第一连接线，所述第一连接线位于所述第一衬底沿所述第一边缘的侧垂面上，将所述第一引线与所述第四引线电连接；\n\n[0015]第二连接线，所述第二连接线位于所述第二衬底沿所述第二边缘的侧垂面上，将所述第二引线与所述第三引线电连接。\n\n[0016]在本申请的显示面板中，\n\n[0017]所述第一引线从所述第一边缘垂直引出，以及与所述第一电源线层中的扫描线共线；\n\n[0018]所述第二引线从所述第二边缘垂直引出，以及与所述第一电源线层中的数据线共线；\n\n[0019]所述第三引线从所述第三边缘垂直引出，以及与所述第一扇出走线电连接；\n\n[0020]所述第四引线从所述第四边缘垂直引出，以及与所述第二扇出走线电连接；\n\n[0021]所述第一边缘垂直于所述第二边缘，所述第三边缘垂直于所述第四边缘；\n\n[0022]所述第一边缘与所述第四边缘对应，所述第二边缘与所述第三边缘对应。\n\n[0023]在本申请的显示面板中，\n\n[0024]所述第一引线与所述第四引线关于所述第一衬底与所述第二衬底的对称面对称；\n\n[0025]所述第二引线与所述第三引线关于所述第一衬底与所述第二衬底的对称面对称。\n\n[0026]在本申请的显示面板中，所述第一引线、所述第二引线、所述第三引线、以及所述第四引线的长度小于相邻两个所述发光器件的间距。\n\n[0027]在本申请的显示面板中，所述发光器件包括Micro-LED、Mini-LED。\n\n[0028]一种显示装置，包括至少两个所述的显示面板；\n\n[0029]其中，相邻两个所述显示面板之间的相邻的两个所述发光器件的间距小于任一所述显示面板内的相邻的两个所述发光器件的间距。\n\n[0030]一种显示面板的制作方法，包括：\n\n[0031]在第一衬底上形成第一电源线层，\n\n[0032]所述第一电源线层包括位于所述第一衬底的第一边缘的第一引线、及位于所述第一衬底的第二边缘的第二引线；\n\n[0033]在第二衬底上形成包括第一扇出走线区、以及第二扇出走线区的第二电源线层，\n\n[0034]所述第一扇出走线区包括第一扇出走线以及位于所述第二衬底的第三边缘的第三引线，所述第二扇出走线区包括第二扇出走线以及位于所述第二衬底的第四边缘的第四引线；\n\n[0035]将所述第一衬底远离所述第一电源线层一侧与所述第二衬底远离所述扇出区一侧贴合；\n\n[0036]在所述第一衬底沿所述第一边缘的侧垂面上形成第一连接线以使所述第一引线与所述第四引线电连接、以及在所述第二衬底沿所述第三边缘的侧垂面上形成第二连接线以使所述第二引线与所述第三引线电连接；\n\n[0037]在所述第一电源线层上形成至少一发光器件。\n\n[0038]在本申请的显示面板的制作方法中，在第一衬底上形成第一电源线层的步骤包括：\n\n[0039]在第一衬底上沿第一方向形成相互绝缘设置的扫描线，以及从所述扫描线延伸、与所述第一衬底的第一边缘垂直的第一引线；\n\n[0040]在第一衬底上沿第二方向形成相互绝缘设置的数据线，以及从所述数据线延伸、与所述第一衬底的第二边缘垂直的第二引线；\n\n[0041]其中，所述第一边缘与所述第二边缘垂直。\n\n[0042]在本申请的显示面板的制作方法中，在第二衬底上形成第二电源线层的步骤包括：\n\n[0043]在第二衬底上形成相互绝缘设置的第一扇出走线，以及从所述第一扇出走线延伸、与所述第二衬底的第三边缘垂直的第三引线；\n\n[0044]在第二衬底上形成相互绝缘设置的第二扇出走线，以及从所述第二扇出走线延伸、与所述第二衬底的第四边缘垂直的第四引线；\n\n[0045]其中，所述第三边缘与所述第四边缘垂直，所述第一边缘与所述第四边缘对应，所述第二边缘与所述第三边缘对应；\n\n[0046]所述第一引线与所述第四引线关于所述第一衬底与所述第二衬底的对称面对称，所述第二引线与所述第三引线关于所述第一衬底与所述第二衬底的对称面对称。\n\n[0047]在本申请的显示面板的制作方法中，所述第一引线、所述第二引线、所述第三引线、以及所述第四引线的长度小于相邻两个所述发光器件的间距。\n\n[0048]有益效果：本申请通过在显示面板的背面设置扇出走线，以及通过引线、连接线将数据线及扫描线与扇出走线电连接，实现了显示面板的无边框设计，便于显示面板的拼接，减少了拼接屏的黑色非显示区，提高了用户体验。\n\n附图说明\n\n[0049]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0050]图1为本申请显示面板的第一种结构图；\n\n[0051]图2为本申请显示面板的第一种结构图的局部俯视图；\n\n[0052]图3为本申请显示面板的第一种结构图的局部俯视图；\n\n[0053]图4为本申请显示面板的第二种结构的对称示意图；\n\n[0054]图5为本申请显示装置的局部俯视图；\n\n[0055]图6为本申请显示面板的制作流程图。\n\n具体实施方式\n\n[0056]以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。\n\n[0057]现有技术中，Micro-LED在应用大屏幕甚至超大屏幕(例如大于100平方米)时，由于Micro-LED显示面板的的边框较大，屏幕单元拼接时会留有较大的黑色非发光区，影响用户视觉体验。基于此，本申请提出了一种显示面板、显示装置及显示面板的制作方法。\n\n[0058]请参阅图1～图4，所述显示面板100包括：\n\n[0059]第一基板110，包括第一衬底120、位于所述第一衬底120上的第一电源线层130、位于所述第一电源线层130上的至少一发光器件140，所述第一电源线层130包括位于所述第一衬底120的第一边缘121的第一引线133以及位于所述第一衬底120的第二边缘122的第二引线134。\n\n[0060]第二基板210，位于所述第一基板210远离所述发光器件140的一侧，包括第二衬底220、位于所述第二衬底220远离所述发光器件140一侧的第二电源线层230，所述第二电源线层230包括第一扇出走线区以及第二扇出走线区。所述第一扇出走线区包括第一扇出走线241以及位于所述第二基板210的第三边缘221的第三引线242。所述第二扇出走线区包括第二扇出走线251以及位于所述第二基板210的第四边缘222的第四引线252。\n\n[0061]第一连接线161，所述第一连接线161位于所述第一衬底120沿所述第一边缘121的侧垂面上，将所述第一引线133与所述第四引线252电连接。\n\n[0062]第二连接线162，所述第二连接线162位于所述第二衬底220沿所述第二边缘122的侧垂面上，将所述第二引线134与所述第三引线242电连接。\n\n[0063]本申请通过在显示面板的背面设置扇出走线，以及通过引线、连接线将显示面板正面的电源线与扇出走线电连接，实现了显示面板的无边框设计，便于显示面板的拼接，减少了拼接屏的黑色非显示区，提高了用户体验。\n\n[0064]现结合具体实施例对本申请的技术方案进行描述。\n\n[0065]实施例一\n\n[0066]请参阅图1～图4，所述显示面板100包括第一基板110、第二基板210、以及连接所述第一基板110与所述第二基板210的第一连接线161与第二连接线162。\n\n[0067]所述第一基板110包括位于第一衬底120上的阵列层112。\n\n[0068]位于所述阵列层112上的绝缘层150。\n\n[0069]位于所述阵列层112与所述绝缘层150上的扫描线131、数据线132、第一引线133以及第二引线134。\n\n[0070]位于所述扫描线131与所述数据线132上的发光器件140。\n\n[0071]位于所述阵列层112、所述绝缘层150、所述扫描线131、所述数据线132、以及所述发光器件140上的封装层160。\n\n[0072]所述第二基板210包括第二衬底220、位于所述第二衬底220远离所述发光器件140一侧的第二电源线层230。\n\n[0073]所述第二电源线层230包括第一扇出走线区，包括第一扇出走线241以及位于所述第二基板210的第三边缘221的第三引线242以及第二扇出走线区，包括第二扇出走线251、位于所述第二基板210的第四边缘222的第四引线252。\n\n[0074]所述第一连接线161位于所述第一衬底120沿所述第一边缘121的侧垂面上，将所述第一引线133与所述第四引线252电连接。\n\n[0075]所述第二连接线162位于所述第二衬底220沿所述第二边缘122的侧垂面上，将所述第二引线134与所述第三引线242电连接。\n\n[0076]本实施例中，所述扫描线131与所述阵列层150的漏极电连接。所述扫描线131、数据线132与所述发光器件140电连接。通过所述扫描线改变电压，改变所述发光器件的发光亮度，达到不同的显示效果。\n\n[0077]本实施例中，所述显示面板100还包括位于所述第一扇出走线区与所述第二扇出走线区上远离所述第二衬底220一侧的覆晶薄膜260、位于所述覆晶薄膜260上的印制线路板270。以所述第二扇出走线区的所述第二扇出走线251为例，具体请参阅图1。为所述显示面板100提供电气连接以及电路控制。\n\n[0078]本实施例中，所述第一引线133从所述第一边缘121垂直引出，以及与所述扫描线131共线。所述第二引线134从所述第二边缘122垂直引出，以及与所述数据线132共线。所述第三引线242从所述第三边缘221垂直引出，以及与所述第一扇出走线241电连接。所述第四引线252从所述第四边缘222垂直引出，以及与所述第二扇出走线251电连接，具体请参阅图1～图3。引线从显示面板的边缘垂直引出，可以更好地排线理线，方便引线与连接线的连接，实现显示面板的无边框设计。\n\n[0079]本实施例中，所述第一边缘121垂直于所述第二边缘122，所述第三边缘221垂直于所述第四边缘222。所述第一边缘121与所述第四边缘222对应，所述第二边缘122与所述第三边缘221对应，具体请参阅图1～图4。同一基板的两引线边缘相互垂直，两基板的对应引线的边缘相对应，方便生产制造，利于两基板的对位贴合，避免因贴合不准导致的接触不良等问题。\n\n[0080]本实施例中，所述第一引线133与所述第四引线252关于所述第一衬底120与所述第二衬底220的对称面111对称。所述第二引线134与所述第三引线242关于所述第一衬底120与所述第二衬底220的对称面111对称，具体请参阅图4。对应引线呈镜面对称设置，有利于对位贴合，保证了连接效果，提高了良率，消除了显示面板的边框，保证了屏幕显示效果。\n\n[0081]本实施例中，所述第一引线133、所述第二引线134、所述第三引线242、以及所述第四引线252的长度小于相邻两个所述发光器件140的间距。减小显示面板拼接缝隙的黑色非发光区，改善用户视觉效果。\n\n[0082]本实施例中，所述第一引线133、所述第二引线134、所述第三引线242、以及所述第四引线252的长度小于相邻两个所述发光器件140的间距的二分之一。可以更好地缩小显示面板拼接时拼接缝隙的黑色非发光区，更好地实现整个屏幕无缝隙的视觉效果。\n\n[0083]本实施例中，在所述第一基板110与所述第二基板210之间，设置有贴合胶。增加两基板的对位贴合效果，更好地减小边框，从而减小屏幕黑色非发光区，达到好的大屏视觉效果。\n\n[0084]本实施例中，所述发光器件140包括Micro-LED、Mini-LED。对于所述发光器件140不做限制，可以独立发光的发光器件均可作为发光器件。\n\n[0085]在实施例一中，通过在显示面板的背面设置扇出走线，以及通过引线、连接线将显示面板正面的数据线及扫描线与扇出走线电连接，实现了显示面板的无边框设计，方便了显示面板的拼接，减少了拼接屏拼接处的黑色非显示区，提高了用户体验。\n\n[0086]请参阅图5，本申请还提出了一种显示装置101。\n\n[0087]所述显示装置101包括至少两个所述显示面板100，其中相邻两个所述显示面板100之间的相邻的两个所述发光器件140的间距d小于任一所述显示面板100内的相邻的两个所述发光器件140的间距D，具体请参阅图5。\n\n[0088]本申请通过设置两个相邻的本申请的显示面板的相邻两个像素的间距小于显示面板内任意两个相邻像素的间距，减小显示装置中显示面板拼接处的黑色非发光区，改善显示装置的显示效果。\n\n[0089]现结合具体实施例对本申请的技术方案进行描述。\n\n[0090]实施例二\n\n[0091]请参阅图5，所述显示装置101包括至少两个所述显示面板100，其中相邻两个所述显示面板100之间的相邻的两个所述发光器件140的间距d小于任一所述显示面板100内的相邻的两个所述发光器件140的间距D。\n\n[0092]本实施例中，所述发光器件140包括Micro-LED、Mini-LED。对于所述发光器件140不做限制，可以独立发光的发光器件均可作为发光器件。\n\n[0093]本实施例中，所述显示装置101由至少两个个所述显示面板100拼接而成，所述显示面板100为矩形，所述显示装置101为矩形。矩形的所述显示面板100可以更好地拓展拼接，实现多尺寸的大屏显示装置。\n\n[0094]在实施例二中，通过设置两个相邻的本申请的显示面板的相邻两个像素的间距小于显示面板内任意两个相邻像素的间距，减小显示装置中显示面板拼接处的黑色非发光区，改善显示装置的显示效果。\n\n[0095]请参阅图6，本申请还提出了一种显示面板100的制作方法，包括：\n\n[0096]S10、在第一衬底120上形成第一电源线层130，所述第一电源线层130包括位于所述第一衬底120的第一边缘121的第一引线133、及位于所述第一衬底120的第二边缘122的第二引线134。\n\n[0097]S20、在第二衬底220上形成包括第一扇出走线区、以及第二扇出走线区的第二电源线层230，所述第一扇出走线区包括第一扇出走线241以及位于所述第二衬底220的第三边缘221的第三引线242，所述第二扇出走线区包括第二扇出走线251以及位于所述第二衬底220的第四边缘222的第四引线252。\n\n[0098]S30、将所述第一衬底120远离所述第一电源线层130一侧与所述第二衬底220远离所述第二电源线层230一侧贴合。\n\n[0099]S40、在所述第一衬底120沿所述第一边缘121的侧垂面上形成第一连接线161以使所述第一引线133与所述第四引线252电连接、以及在所述第二衬底220沿所述第三边缘221的侧垂面上形成第二连接线162以使所述第二引线134与所述第三引线242电连接。\n\n[0100]S50、在所述第一电源线层130上形成至少一发光器件140。\n\n[0101]本申请通过在显示面板的背面设置扇出走线，以及通过引线、连接线将显示面板正面的电源线与扇出走线电连接，实现了显示面板的无边框设计，便于显示面板的拼接，减少了拼接屏的黑色非显示区，提高了用户体验。\n\n[0102]现结合具体实施例对本申请的技术方案进行描述。\n\n[0103]实施例三\n\n[0104]S10、在第一衬底120上形成第一电源线层130，所述第一电源线层130包括位于所述第一衬底120的第一边缘121的第一引线133、及位于所述第一衬底120的第二边缘122的第二引线134。\n\n[0105]本实施例中，在第一衬底120上形成第一电源线层130的步骤包括：\n\n[0106]S11、在第一衬底120上沿第一方向形成相互绝缘设置的扫描线131，以及从所述扫描线131延伸、与所述第一衬底120的第一边缘121垂直的第一引线133。\n\n[0107]本实施例中，所述第一方向为X轴方向，具体请参阅图2。\n\n[0108]S12、在第一衬底120上沿第二方向形成相互绝缘设置的数据线132，以及从所述数据线132延伸、与所述第一衬底120的第二边缘122垂直的第二引线134。\n\n[0109]本实施例中，所述第二方向为Y轴方向，具体请参阅图2。\n\n[0110]其中，所述第一边缘121与所述第二边缘122垂直，具体请参阅图2。\n\n[0111]引线从数据线、及扫描线延伸，方便了数据线、及电源线与扇出走线的电连接。引线从第一衬底的边缘垂直引出，可以更好地排线理线，方便引线与连接线的连接，实现显示面板的无边框设计。同一基板的两引线边缘相互垂直，方便生产制造，利于两基板的对位贴合，避免因贴合不准导致的接触不良等问题。\n\n[0112]本实施例中，所述第一电源线层130的制作方法包括低温多晶硅方法、金属氧化物方法。\n\n[0113]S20、在第二衬底220上形成包括第一扇出走线区、以及第二扇出走线区的第二电源线层230，所述第一扇出走线区包括第一扇出走线241以及位于所述第二衬底220的第三边缘221的第三引线242，所述第二扇出走线区包括第二扇出走线251以及位于所述第二衬底220的第四边缘222的第四引线252。\n\n[0114]本实施例中，在第二衬底220上形成第二电源线层230的步骤包括：\n\n[0115]在第二衬底220上形成相互绝缘设置的第一扇出走线241，以及从所述第一扇出走线241延伸、与所述第二衬底220的第三边缘221垂直的第三引线242。\n\n[0116]在第二衬底220上形成相互绝缘设置的第二扇出走线251，以及从所述第二扇出走线251延伸、与所述第二衬底220的第四边缘222垂直的第四引线252。\n\n[0117]其中，所述第三边缘221与所述第四边缘222垂直，所述第一边缘121与所述第四边缘222对应，所述第二边缘122与所述第三边缘221对应。所述第一引线133与所述第四引线252关于所述第一衬底120与所述第二衬底220的对称面111对称，所述第二引线134与所述第三引线242关于所述第一衬底120与所述第二衬底220的对称面111对称，具体请参阅图3、图4。\n\n[0118]引线从扇出走线延伸，方便了扇出走线与数据线、及电源线的电连接。引线从第二衬底的边缘垂直引出，可以更好地排线理线，方便引线与连接线的连接，实现显示面板的无边框设计。同一基板的两引线边缘相互垂直，两基板的对应引线的边缘相对应，方便生产制造，利于两基板的对位贴合，避免因贴合不准导致的接触不良、影响显示效果等问题。对应引线呈镜面对称形成，有利于对位贴合，保证了连接效果，提高了良率，保证了屏幕显示效果。\n\n[0119]S30、将所述第一衬底120远离所述第一电源线层130一侧与所述第二衬底220远离所述第二电源线层230一侧贴合。\n\n[0120]本实施例中，贴合工艺采用的材料包括贴合胶水，在第一基板与第二基板间形成胶水层。增加两基板的对位贴合效果，更好地减小边框，达到好的大屏视觉效果。\n\n[0121]S40、在所述第一衬底120沿所述第一边缘121的侧垂面上形成第一连接线161以使所述第一引线133与所述第四引线252电连接、以及在所述第二衬底220沿所述第三边缘221的侧垂面上形成第二连接线162以使所述第二引线134与所述第三引线242电连接。\n\n[0122]S50、在所述第一电源线层130上形成至少一发光器件140。\n\n[0123]本实施例中，所述发光器件140包括Micro-LED、Mini-LED。对于所述发光器件140不做限制，可以独立发光的发光器件均可作为发光器件。\n\n[0124]本实施例中，所述显示面板100的制作方法还包括：\n\n[0125]S60、在所述第二电源线层230上形成电路板层。\n\n[0126]本实施例中，所述电路板层包括覆晶薄膜260、以及印制线路板270，具体请参阅图1。本实施例通过将覆晶薄膜260以及印制线路板270设置在显示面板的背面，在保证显示面板的电气连接以及电路控制的前提下，消除了显示面板的边框。\n\n[0127]在实施例三中，通过在第一衬底上形成显示区及对应引线，在第二衬底上型成扇出走线区及对应引线，再将两基板对位贴合，形成对应连接线，将显示区的电源线与扇出走线电连接，实现了显示面板的无边框设计，便于显示面板的拼接，减少了拼接屏的黑色非显示区，提高了用户体验。\n\n[0128]本申请公开了一种显示面板及其制作方法、显示装置。该显示面板包括：第一基板，包括位于该第一基板的第一边缘的第一引线及位于该第一基板的第二边缘的第二引线；第二基板，包括位于该第二基板的第三边缘的第三引线及位于该第二基板的第四边缘的第四引线；以及连接该第一引线与该第四引线、以及连接该第二引线与该第三引线的连接线。本申请通过在显示面板的背面设置扇出走线，以及通过引线、连接线将数据线及扫描线与扇出走线电连接，实现了显示面板的无边框设计，便于显示面板的拼接，减少了拼接屏的黑色非显示区，提高了用户体验。\n\n[0129]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本申请涉及显示领域，尤其涉及一种显示面板及其制作方法、显示装置。\n\n背景技术\n\n[0002]Micro-LED(Micro Light Emitting Diode，微型发光二极管)是将传统发光二极管芯片尺寸微缩至100微米以下，然后通过转移技术，将红绿蓝三色芯片批量式转移至薄膜晶体管驱动电路背板上形成阵列结构，芯片的正负极与背板源极和漏极连接，红绿蓝像素经由电路控制其亮暗程度达到全彩显示的目。Micro-LED具有自发光、不易受水汽、氧气或高温影响等优点。\n\n[0003]现有技术中，Micro-LED在应用大屏幕甚至超大屏幕(例如大于100平方米)时，由于Micro-LED显示面板的的边框较大，屏幕单元拼接时会留有较大的黑色非发光区，影响用户视觉体验。\n\n[0004]因此，亟需一种显示面板以解决上述技术问题。\n\n发明内容\n\n[0005]本申请提供了一种显示面板及其制作方法、显示装置，以解决大屏拼接时，留有较大的黑色非发光区的技术问题。\n\n[0006]为解决上述问题，本申请提供的技术方案如下：\n\n[0007]一种显示面板，包括：\n\n[0008]第一基板，包括第一衬底、位于所述第一衬底上的第一电源线层、位于所述第一电源线层上的至少一发光器件，所述第一电源线层包括：\n\n[0009]位于所述第一衬底的第一边缘的第一引线；\n\n[0010]位于所述第一衬底的第二边缘的第二引线；\n\n[0011]第二基板，位于所述第一基板远离所述发光器件的一侧，包括第二衬底、位于所述第二衬底远离所述发光器件一侧的第二电源线层，所述第二电源线层包括：\n\n[0012]第一扇出走线区，包括第一扇出走线以及位于所述第二基板的第三边缘的第三引线；\n\n[0013]第二扇出走线区，包括第二扇出走线以及位于所述第二基板的第四边缘的第四引线；\n\n[0014]第一连接线，所述第一连接线位于所述第一衬底沿所述第一边缘的侧垂面上，将所述第一引线与所述第四引线电连接；\n\n[0015]第二连接线，所述第二连接线位于所述第二衬底沿所述第二边缘的侧垂面上，将所述第二引线与所述第三引线电连接。\n\n[0016]在本申请的显示面板中，\n\n[0017]所述第一引线从所述第一边缘垂直引出，以及与所述第一电源线层中的扫描线共线；\n\n[0018]所述第二引线从所述第二边缘垂直引出，以及与所述第一电源线层中的数据线共线；\n\n[0019]所述第三引线从所述第三边缘垂直引出，以及与所述第一扇出走线电连接；\n\n[0020]所述第四引线从所述第四边缘垂直引出，以及与所述第二扇出走线电连接；\n\n[0021]所述第一边缘垂直于所述第二边缘，所述第三边缘垂直于所述第四边缘；\n\n[0022]所述第一边缘与所述第四边缘对应，所述第二边缘与所述第三边缘对应。\n\n[0023]在本申请的显示面板中，\n\n[0024]所述第一引线与所述第四引线关于所述第一衬底与所述第二衬底的对称面对称；\n\n[0025]所述第二引线与所述第三引线关于所述第一衬底与所述第二衬底的对称面对称。\n\n[0026]在本申请的显示面板中，所述第一引线、所述第二引线、所述第三引线、以及所述第四引线的长度小于相邻两个所述发光器件的间距。\n\n[0027]在本申请的显示面板中，所述发光器件包括Micro-LED、Mini-LED。\n\n[0028]一种显示装置，包括至少两个所述的显示面板；\n\n[0029]其中，相邻两个所述显示面板之间的相邻的两个所述发光器件的间距小于任一所述显示面板内的相邻的两个所述发光器件的间距。\n\n[0030]一种显示面板的制作方法，包括：\n\n[0031]在第一衬底上形成第一电源线层，\n\n[0032]所述第一电源线层包括位于所述第一衬底的第一边缘的第一引线、及位于所述第一衬底的第二边缘的第二引线；\n\n[0033]在第二衬底上形成包括第一扇出走线区、以及第二扇出走线区的第二电源线层，\n\n[0034]所述第一扇出走线区包括第一扇出走线以及位于所述第二衬底的第三边缘的第三引线，所述第二扇出走线区包括第二扇出走线以及位于所述第二衬底的第四边缘的第四引线；\n\n[0035]将所述第一衬底远离所述第一电源线层一侧与所述第二衬底远离所述扇出区一侧贴合；\n\n[0036]在所述第一衬底沿所述第一边缘的侧垂面上形成第一连接线以使所述第一引线与所述第四引线电连接、以及在所述第二衬底沿所述第三边缘的侧垂面上形成第二连接线以使所述第二引线与所述第三引线电连接；\n\n[0037]在所述第一电源线层上形成至少一发光器件。\n\n[0038]在本申请的显示面板的制作方法中，在第一衬底上形成第一电源线层的步骤包括：\n\n[0039]在第一衬底上沿第一方向形成相互绝缘设置的扫描线，以及从所述扫描线延伸、与所述第一衬底的第一边缘垂直的第一引线；\n\n[0040]在第一衬底上沿第二方向形成相互绝缘设置的数据线，以及从所述数据线延伸、与所述第一衬底的第二边缘垂直的第二引线；\n\n[0041]其中，所述第一边缘与所述第二边缘垂直。\n\n[0042]在本申请的显示面板的制作方法中，在第二衬底上形成第二电源线层的步骤包括：\n\n[0043]在第二衬底上形成相互绝缘设置的第一扇出走线，以及从所述第一扇出走线延伸、与所述第二衬底的第三边缘垂直的第三引线；\n\n[0044]在第二衬底上形成相互绝缘设置的第二扇出走线，以及从所述第二扇出走线延伸、与所述第二衬底的第四边缘垂直的第四引线；\n\n[0045]其中，所述第三边缘与所述第四边缘垂直，所述第一边缘与所述第四边缘对应，所述第二边缘与所述第三边缘对应；\n\n[0046]所述第一引线与所述第四引线关于所述第一衬底与所述第二衬底的对称面对称，所述第二引线与所述第三引线关于所述第一衬底与所述第二衬底的对称面对称。\n\n[0047]在本申请的显示面板的制作方法中，所述第一引线、所述第二引线、所述第三引线、以及所述第四引线的长度小于相邻两个所述发光器件的间距。\n\n[0048]有益效果：本申请通过在显示面板的背面设置扇出走线，以及通过引线、连接线将数据线及扫描线与扇出走线电连接，实现了显示面板的无边框设计，便于显示面板的拼接，减少了拼接屏的黑色非显示区，提高了用户体验。\n\n附图说明\n\n[0049]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0050]图1为本申请显示面板的第一种结构图；\n\n[0051]图2为本申请显示面板的第一种结构图的局部俯视图；\n\n[0052]图3为本申请显示面板的第一种结构图的局部俯视图；\n\n[0053]图4为本申请显示面板的第二种结构的对称示意图；\n\n[0054]图5为本申请显示装置的局部俯视图；\n\n[0055]图6为本申请显示面板的制作流程图。\n\n具体实施方式\n\n[0056]以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。\n\n[0057]现有技术中，Micro-LED在应用大屏幕甚至超大屏幕(例如大于100平方米)时，由于Micro-LED显示面板的的边框较大，屏幕单元拼接时会留有较大的黑色非发光区，影响用户视觉体验。基于此，本申请提出了一种显示面板、显示装置及显示面板的制作方法。\n\n[0058]请参阅图1～图4，所述显示面板100包括：\n\n[0059]第一基板110，包括第一衬底120、位于所述第一衬底120上的第一电源线层130、位于所述第一电源线层130上的至少一发光器件140，所述第一电源线层130包括位于所述第一衬底120的第一边缘121的第一引线133以及位于所述第一衬底120的第二边缘122的第二引线134。\n\n[0060]第二基板210，位于所述第一基板210远离所述发光器件140的一侧，包括第二衬底220、位于所述第二衬底220远离所述发光器件140一侧的第二电源线层230，所述第二电源线层230包括第一扇出走线区以及第二扇出走线区。所述第一扇出走线区包括第一扇出走线241以及位于所述第二基板210的第三边缘221的第三引线242。所述第二扇出走线区包括第二扇出走线251以及位于所述第二基板210的第四边缘222的第四引线252。\n\n[0061]第一连接线161，所述第一连接线161位于所述第一衬底120沿所述第一边缘121的侧垂面上，将所述第一引线133与所述第四引线252电连接。\n\n[0062]第二连接线162，所述第二连接线162位于所述第二衬底220沿所述第二边缘122的侧垂面上，将所述第二引线134与所述第三引线242电连接。\n\n[0063]本申请通过在显示面板的背面设置扇出走线，以及通过引线、连接线将显示面板正面的电源线与扇出走线电连接，实现了显示面板的无边框设计，便于显示面板的拼接，减少了拼接屏的黑色非显示区，提高了用户体验。\n\n[0064]现结合具体实施例对本申请的技术方案进行描述。\n\n[0065]实施例一\n\n[0066]请参阅图1～图4，所述显示面板100包括第一基板110、第二基板210、以及连接所述第一基板110与所述第二基板210的第一连接线161与第二连接线162。\n\n[0067]所述第一基板110包括位于第一衬底120上的阵列层112。\n\n[0068]位于所述阵列层112上的绝缘层150。\n\n[0069]位于所述阵列层112与所述绝缘层150上的扫描线131、数据线132、第一引线133以及第二引线134。\n\n[0070]位于所述扫描线131与所述数据线132上的发光器件140。\n\n[0071]位于所述阵列层112、所述绝缘层150、所述扫描线131、所述数据线132、以及所述发光器件140上的封装层160。\n\n[0072]所述第二基板210包括第二衬底220、位于所述第二衬底220远离所述发光器件140一侧的第二电源线层230。\n\n[0073]所述第二电源线层230包括第一扇出走线区，包括第一扇出走线241以及位于所述第二基板210的第三边缘221的第三引线242以及第二扇出走线区，包括第二扇出走线251、位于所述第二基板210的第四边缘222的第四引线252。\n\n[0074]所述第一连接线161位于所述第一衬底120沿所述第一边缘121的侧垂面上，将所述第一引线133与所述第四引线252电连接。\n\n[0075]所述第二连接线162位于所述第二衬底220沿所述第二边缘122的侧垂面上，将所述第二引线134与所述第三引线242电连接。\n\n[0076]本实施例中，所述扫描线131与所述阵列层150的漏极电连接。所述扫描线131、数据线132与所述发光器件140电连接。通过所述扫描线改变电压，改变所述发光器件的发光亮度，达到不同的显示效果。\n\n[0077]本实施例中，所述显示面板100还包括位于所述第一扇出走线区与所述第二扇出走线区上远离所述第二衬底220一侧的覆晶薄膜260、位于所述覆晶薄膜260上的印制线路板270。以所述第二扇出走线区的所述第二扇出走线251为例，具体请参阅图1。为所述显示面板100提供电气连接以及电路控制。\n\n[0078]本实施例中，所述第一引线133从所述第一边缘121垂直引出，以及与所述扫描线131共线。所述第二引线134从所述第二边缘122垂直引出，以及与所述数据线132共线。所述第三引线242从所述第三边缘221垂直引出，以及与所述第一扇出走线241电连接。所述第四引线252从所述第四边缘222垂直引出，以及与所述第二扇出走线251电连接，具体请参阅图1～图3。引线从显示面板的边缘垂直引出，可以更好地排线理线，方便引线与连接线的连接，实现显示面板的无边框设计。\n\n[0079]本实施例中，所述第一边缘121垂直于所述第二边缘122，所述第三边缘221垂直于所述第四边缘222。所述第一边缘121与所述第四边缘222对应，所述第二边缘122与所述第三边缘221对应，具体请参阅图1～图4。同一基板的两引线边缘相互垂直，两基板的对应引线的边缘相对应，方便生产制造，利于两基板的对位贴合，避免因贴合不准导致的接触不良等问题。\n\n[0080]本实施例中，所述第一引线133与所述第四引线252关于所述第一衬底120与所述第二衬底220的对称面111对称。所述第二引线134与所述第三引线242关于所述第一衬底120与所述第二衬底220的对称面111对称，具体请参阅图4。对应引线呈镜面对称设置，有利于对位贴合，保证了连接效果，提高了良率，消除了显示面板的边框，保证了屏幕显示效果。\n\n[0081]本实施例中，所述第一引线133、所述第二引线134、所述第三引线242、以及所述第四引线252的长度小于相邻两个所述发光器件140的间距。减小显示面板拼接缝隙的黑色非发光区，改善用户视觉效果。\n\n[0082]本实施例中，所述第一引线133、所述第二引线134、所述第三引线242、以及所述第四引线252的长度小于相邻两个所述发光器件140的间距的二分之一。可以更好地缩小显示面板拼接时拼接缝隙的黑色非发光区，更好地实现整个屏幕无缝隙的视觉效果。\n\n[0083]本实施例中，在所述第一基板110与所述第二基板210之间，设置有贴合胶。增加两基板的对位贴合效果，更好地减小边框，从而减小屏幕黑色非发光区，达到好的大屏视觉效果。\n\n[0084]本实施例中，所述发光器件140包括Micro-LED、Mini-LED。对于所述发光器件140不做限制，可以独立发光的发光器件均可作为发光器件。\n\n[0085]在实施例一中，通过在显示面板的背面设置扇出走线，以及通过引线、连接线将显示面板正面的数据线及扫描线与扇出走线电连接，实现了显示面板的无边框设计，方便了显示面板的拼接，减少了拼接屏拼接处的黑色非显示区，提高了用户体验。\n\n[0086]请参阅图5，本申请还提出了一种显示装置101。\n\n[0087]所述显示装置101包括至少两个所述显示面板100，其中相邻两个所述显示面板100之间的相邻的两个所述发光器件140的间距d小于任一所述显示面板100内的相邻的两个所述发光器件140的间距D，具体请参阅图5。\n\n[0088]本申请通过设置两个相邻的本申请的显示面板的相邻两个像素的间距小于显示面板内任意两个相邻像素的间距，减小显示装置中显示面板拼接处的黑色非发光区，改善显示装置的显示效果。\n\n[0089]现结合具体实施例对本申请的技术方案进行描述。\n\n[0090]实施例二\n\n[0091]请参阅图5，所述显示装置101包括至少两个所述显示面板100，其中相邻两个所述显示面板100之间的相邻的两个所述发光器件140的间距d小于任一所述显示面板100内的相邻的两个所述发光器件140的间距D。\n\n[0092]本实施例中，所述发光器件140包括Micro-LED、Mini-LED。对于所述发光器件140不做限制，可以独立发光的发光器件均可作为发光器件。\n\n[0093]本实施例中，所述显示装置101由至少两个个所述显示面板100拼接而成，所述显示面板100为矩形，所述显示装置101为矩形。矩形的所述显示面板100可以更好地拓展拼接，实现多尺寸的大屏显示装置。\n\n[0094]在实施例二中，通过设置两个相邻的本申请的显示面板的相邻两个像素的间距小于显示面板内任意两个相邻像素的间距，减小显示装置中显示面板拼接处的黑色非发光区，改善显示装置的显示效果。\n\n[0095]请参阅图6，本申请还提出了一种显示面板100的制作方法，包括：\n\n[0096]S10、在第一衬底120上形成第一电源线层130，所述第一电源线层130包括位于所述第一衬底120的第一边缘121的第一引线133、及位于所述第一衬底120的第二边缘122的第二引线134。\n\n[0097]S20、在第二衬底220上形成包括第一扇出走线区、以及第二扇出走线区的第二电源线层230，所述第一扇出走线区包括第一扇出走线241以及位于所述第二衬底220的第三边缘221的第三引线242，所述第二扇出走线区包括第二扇出走线251以及位于所述第二衬底220的第四边缘222的第四引线252。\n\n[0098]S30、将所述第一衬底120远离所述第一电源线层130一侧与所述第二衬底220远离所述第二电源线层230一侧贴合。\n\n[0099]S40、在所述第一衬底120沿所述第一边缘121的侧垂面上形成第一连接线161以使所述第一引线133与所述第四引线252电连接、以及在所述第二衬底220沿所述第三边缘221的侧垂面上形成第二连接线162以使所述第二引线134与所述第三引线242电连接。\n\n[0100]S50、在所述第一电源线层130上形成至少一发光器件140。\n\n[0101]本申请通过在显示面板的背面设置扇出走线，以及通过引线、连接线将显示面板正面的电源线与扇出走线电连接，实现了显示面板的无边框设计，便于显示面板的拼接，减少了拼接屏的黑色非显示区，提高了用户体验。\n\n[0102]现结合具体实施例对本申请的技术方案进行描述。\n\n[0103]实施例三\n\n[0104]S10、在第一衬底120上形成第一电源线层130，所述第一电源线层130包括位于所述第一衬底120的第一边缘121的第一引线133、及位于所述第一衬底120的第二边缘122的第二引线134。\n\n[0105]本实施例中，在第一衬底120上形成第一电源线层130的步骤包括：\n\n[0106]S11、在第一衬底120上沿第一方向形成相互绝缘设置的扫描线131，以及从所述扫描线131延伸、与所述第一衬底120的第一边缘121垂直的第一引线133。\n\n[0107]本实施例中，所述第一方向为X轴方向，具体请参阅图2。\n\n[0108]S12、在第一衬底120上沿第二方向形成相互绝缘设置的数据线132，以及从所述数据线132延伸、与所述第一衬底120的第二边缘122垂直的第二引线134。\n\n[0109]本实施例中，所述第二方向为Y轴方向，具体请参阅图2。\n\n[0110]其中，所述第一边缘121与所述第二边缘122垂直，具体请参阅图2。\n\n[0111]引线从数据线、及扫描线延伸，方便了数据线、及电源线与扇出走线的电连接。引线从第一衬底的边缘垂直引出，可以更好地排线理线，方便引线与连接线的连接，实现显示面板的无边框设计。同一基板的两引线边缘相互垂直，方便生产制造，利于两基板的对位贴合，避免因贴合不准导致的接触不良等问题。\n\n[0112]本实施例中，所述第一电源线层130的制作方法包括低温多晶硅方法、金属氧化物方法。\n\n[0113]S20、在第二衬底220上形成包括第一扇出走线区、以及第二扇出走线区的第二电源线层230，所述第一扇出走线区包括第一扇出走线241以及位于所述第二衬底220的第三边缘221的第三引线242，所述第二扇出走线区包括第二扇出走线251以及位于所述第二衬底220的第四边缘222的第四引线252。\n\n[0114]本实施例中，在第二衬底220上形成第二电源线层230的步骤包括：\n\n[0115]在第二衬底220上形成相互绝缘设置的第一扇出走线241，以及从所述第一扇出走线241延伸、与所述第二衬底220的第三边缘221垂直的第三引线242。\n\n[0116]在第二衬底220上形成相互绝缘设置的第二扇出走线251，以及从所述第二扇出走线251延伸、与所述第二衬底220的第四边缘222垂直的第四引线252。\n\n[0117]其中，所述第三边缘221与所述第四边缘222垂直，所述第一边缘121与所述第四边缘222对应，所述第二边缘122与所述第三边缘221对应。所述第一引线133与所述第四引线252关于所述第一衬底120与所述第二衬底220的对称面111对称，所述第二引线134与所述第三引线242关于所述第一衬底120与所述第二衬底220的对称面111对称，具体请参阅图3、图4。\n\n[0118]引线从扇出走线延伸，方便了扇出走线与数据线、及电源线的电连接。引线从第二衬底的边缘垂直引出，可以更好地排线理线，方便引线与连接线的连接，实现显示面板的无边框设计。同一基板的两引线边缘相互垂直，两基板的对应引线的边缘相对应，方便生产制造，利于两基板的对位贴合，避免因贴合不准导致的接触不良、影响显示效果等问题。对应引线呈镜面对称形成，有利于对位贴合，保证了连接效果，提高了良率，保证了屏幕显示效果。\n\n[0119]S30、将所述第一衬底120远离所述第一电源线层130一侧与所述第二衬底220远离所述第二电源线层230一侧贴合。\n\n[0120]本实施例中，贴合工艺采用的材料包括贴合胶水，在第一基板与第二基板间形成胶水层。增加两基板的对位贴合效果，更好地减小边框，达到好的大屏视觉效果。\n\n[0121]S40、在所述第一衬底120沿所述第一边缘121的侧垂面上形成第一连接线161以使所述第一引线133与所述第四引线252电连接、以及在所述第二衬底220沿所述第三边缘221的侧垂面上形成第二连接线162以使所述第二引线134与所述第三引线242电连接。\n\n[0122]S50、在所述第一电源线层130上形成至少一发光器件140。\n\n[0123]本实施例中，所述发光器件140包括Micro-LED、Mini-LED。对于所述发光器件140不做限制，可以独立发光的发光器件均可作为发光器件。\n\n[0124]本实施例中，所述显示面板100的制作方法还包括：\n\n[0125]S60、在所述第二电源线层230上形成电路板层。\n\n[0126]本实施例中，所述电路板层包括覆晶薄膜260、以及印制线路板270，具体请参阅图1。本实施例通过将覆晶薄膜260以及印制线路板270设置在显示面板的背面，在保证显示面板的电气连接以及电路控制的前提下，消除了显示面板的边框。\n\n[0127]在实施例三中，通过在第一衬底上形成显示区及对应引线，在第二衬底上型成扇出走线区及对应引线，再将两基板对位贴合，形成对应连接线，将显示区的电源线与扇出走线电连接，实现了显示面板的无边框设计，便于显示面板的拼接，减少了拼接屏的黑色非显示区，提高了用户体验。\n\n[0128]本申请公开了一种显示面板及其制作方法、显示装置。该显示面板包括：第一基板，包括位于该第一基板的第一边缘的第一引线及位于该第一基板的第二边缘的第二引线；第二基板，包括位于该第二基板的第三边缘的第三引线及位于该第二基板的第四边缘的第四引线；以及连接该第一引线与该第四引线、以及连接该第二引线与该第三引线的连接线。本申请通过在显示面板的背面设置扇出走线，以及通过引线、连接线将数据线及扫描线与扇出走线电连接，实现了显示面板的无边框设计，便于显示面板的拼接，减少了拼接屏的黑色非显示区，提高了用户体验。\n\n[0129]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10767, 23821, '技术领域\n\n[0001]本发明属于显示技术领域，尤其涉及一种微发光二极管阵列基板及其制备方法。\n\n背景技术\n\n[0002]作为新兴显示技术，微发光二极管(MicroLED)显示相较于LCD、OLED显示有较多优势，如较低的功耗，较高的色域，较快的相应速率等，对封装水氧隔绝要求不高，被视为较有发展前景的一种显示技术。因此，较多面板厂家参与Micro LED技术开发之中。但是MicroLED显示还有诸多技术难点需要克服，如巨量转移，绑定等。\n\n[0003]对于绑定而言，需要保证薄膜晶体管连接层不被后续制程腐蚀，以达到与MicroLED形成良好的绑定。\n\n[0004]在薄膜晶体管制作中，连接层图案化之后还需要有有机层制程，连接层中的铜材料易与后续制程的有机溶剂或有机膜发生反应而出现残留或者缺失。\n\n[0005]因此，如何保护连接层不被破坏，是显示技术中的一项重要课题。\n\n发明内容\n\n[0006]本发明实施例提供一种微发光二极管阵列基板及其制备方法，通过在连接层制备完成后，再形成一层钝化层，保护连接层不会与后续制程中的有机溶剂或有机膜发生反应而出现残留或者缺失，并且利用像素定义层或黑矩阵作为自对准掩膜板，对钝化层进行刻蚀，从而保留像素电极对应位置的连接层。\n\n[0007]根据本发明的一方面，本发明提供微发光二极管阵列基板的制备方法，其包括以下步骤：\n\n[0008]提供一基板，在所述基板上依次形成一遮光层、一缓冲层、一有源层以及一栅极绝缘层；\n\n[0009]在所述栅极绝缘层上依次形成一栅极层以及一介电层，所述介电层上形成第一过孔和第二过孔；\n\n[0010]在所述介电层上形成一源漏极层和一连接端，所述源漏极层通过所述第一过孔和所述第二过孔与所述有源层连接；\n\n[0011]在所述源漏极层上形成一第一钝化层，所述第一钝化层上形成第三过孔和第四过孔；\n\n[0012]在所述第一钝化层上形成一像素电极层，所述像素电极层通过所述第三过孔与所述源漏极层连接，通过所述第四过孔与所述连接端连接；\n\n[0013]在所述像素电极层上形成一连接层，并图案化；\n\n[0014]在所述连接层上形成一第二钝化层，其中所述第二钝化层覆盖所述连接层；\n\n[0015]在所述第二钝化层上形成以像素定义层，并图案化；以及\n\n[0016]以图案化后的像素定义层作为掩模版刻蚀所述第二钝化层，以裸露部分所述连接层。\n\n[0017]进一步地，所述第一钝化层及所述第二钝化层均通过沉积的方式形成，其材料均包括氧化硅、氮化硅及氮氧化硅的至少一种。\n\n[0018]进一步地，所述像素电极层通过沉积的方式形成，其材料包括氧化铟锡。\n\n[0019]进一步地，所述连接层通过沉积的方式形成，其材料包括铜或铜钼化合物。\n\n[0020]进一步地，所述遮光层、所述栅极层及所述源漏极层均通过沉积的方式形成，且其材料均包括钼、铜及铝的至少一种。\n\n[0021]进一步地，所述缓冲层和所述栅极绝缘层均通过沉积的方式形成，其材料均包括氧化硅、氮化硅、氮氧化硅、氧化铝及氮化铝的至少一种。\n\n[0022]进一步地，所述有源层通过沉积并刻蚀的方式形成，其材料包括氧化铟镓锌或氧化铟锌。\n\n[0023]进一步地，所述介电层通过沉积的方式形成，并进行开孔已形成第一和第二过孔，所述介电层的材料包括氧化硅、氮化硅及氮氧化硅的至少一种。\n\n[0024]根据本发明的另一方面，本发明提供一种微发光二极管阵列基板，其包括：\n\n[0025]一基板；\n\n[0026]一遮光层，设于所述基板上；\n\n[0027]一缓冲层，设于所述遮光层上；\n\n[0028]一有源层，设于所述缓冲层上；\n\n[0029]一栅极绝缘层，设于所述有源层上；\n\n[0030]一栅极层，设于所述栅极绝缘层上；\n\n[0031]一介电层，设于所述缓冲层上，并覆盖所述有源层、所述栅极绝缘层以及栅极层，所述介电层上设有第一过孔和第二过孔；\n\n[0032]一源漏极层和连接端，设于所述介电层上，所述源漏极层通过所述第一过孔和所述第二过孔与所述有源层连接；\n\n[0033]一第一钝化层，设于介电层上，并覆盖源漏极层，所述第一钝化层设有第三过孔和第四过孔；\n\n[0034]一像素电极层，设于所述第一钝化层上，所述像素电极层通过所述第三过孔与所述源漏极层连接，通过所述第四过孔与所述连接端连接；\n\n[0035]一连接层，设于所述像素电极层上；\n\n[0036]一第二钝化层，设于所述第一钝化层上，并覆盖部分所述连接层；以及\n\n[0037]一像素定义层，设于所述第二钝化层上。\n\n[0038]本发明实施例所述微发光二极管阵列基板及其制备方法，通过在连接层制备完成后，再形成一层钝化层，保护连接层不会与后续制程中的有机溶剂或有机膜发生反应而出现残留或者缺失，并且利用像素定义层或黑矩阵作为自对准掩膜板，对钝化层进行刻蚀，从而保留像素电极对应位置的连接层。\n\n附图说明\n\n[0039]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其有益效果显而易见。\n\n[0040]图1是本发明一实施例提供的一种微发光二极管阵列基板的结构示意图。\n\n[0041]图2是本发明一实施例提供的一种微发光二极管阵列基板的制备方法的步骤流程示意图。\n\n[0042]图3至图11是本发明所述实施例提供的所述微发光二极管的制备方法的工艺流程示意图。\n\n具体实施方式\n\n[0043]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0044]本发明的说明书和权利要求书以及上述附图中的术语“第一”、“第二”、“第三”等(如果存在)是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。应当理解，这样描述的对象在适当情况下可以互换。此外，术语“包括”和“具有”以及他们的任何变形，意图在于覆盖不排他的包含。\n\n[0045]在具体实施方式中，下文论述的附图以及用来描述本发明公开的原理的各实施例仅用于说明，而不应解释为限制本发明公开的范围。所属领域的技术人员将理解，本发明的原理可在任何适当布置的系统中实施。将详细说明示例性实施方式，在附图中示出了这些实施方式的实例。此外，将参考附图详细描述根据示例性实施例的终端。附图中的相同附图标号指代相同的元件。\n\n[0046]本具体实施方式中使用的术语仅用来描述特定实施方式，而并不意图显示本发明的概念。除非上下文中有明确不同的意义，否则，以单数形式使用的表达涵盖复数形式的表达。在本发明说明书中，应理解，诸如“包括”、“具有”以及“含有”等术语意图说明存在本发明说明书中揭示的特征、数字、步骤、动作或其组合的可能性，而并不意图排除可存在或可添加一个或多个其他特征、数字、步骤、动作或其组合的可能性。附图中的相同参考标号指代相同部分。\n\n[0047]参阅图1，本发明实施例提供一种微发光二极管，包括基板101、遮光层102、缓冲层103、有源层104、栅极绝缘层105、栅极层106、介电层107、源漏极层108、第一钝化层109、像素电极层110、连接层111、第二钝化层112以及像素定义层113。\n\n[0048]具体地，基板101的材料可以为聚酰亚胺(Polyimide，简称PI)。\n\n[0049]遮光层102设于基板101上。遮光层102的材料包括钼、铜及铝的至少一种，具体可以包括但不限于钼，钼/铜叠层，铝/钼叠层等。\n\n[0050]缓冲层103设于遮光层102上。缓冲层103的材料包括氧化硅、氮化硅、氮氧化硅、氧化铝及氮化铝的至少一种，具体可以包括但不限于氧化硅，氧化硅/氮化硅叠层，或氮化硅/氧化硅叠层，或氧化硅与氮化硅、氮氧化硅相互叠层，或氧化硅、氮化硅与氧化铝叠层，或氮化铝等。缓冲层103起到防止遮光层102的金属氧化。\n\n[0051]有源层104设于缓冲层103上。有源层104的材料包括氧化铟镓锌或氧化铟锌。有源层104作为导电沟道。\n\n[0052]栅极绝缘层105设于有源层104上。栅极绝缘层105的材料包括氧化硅、氮化硅、氮氧化硅、氧化铝及氮化铝的至少一种，具体可以包括但不限于氧化硅，氧化硅/氮化硅叠层，或氮化硅/氧化硅叠层，或氧化硅与氮化硅、氮氧化硅相互叠层，或氧化硅、氮化硅与氧化铝叠层，或氮化铝等。栅极绝缘层105用于防止有源层104与栅极层106接触而短路，避免微发光二极管器件失效。\n\n[0053]栅极层106设于栅极绝缘层105上。栅极层106的材料包括钼、铜及铝的至少一种，具体可以包括但不限于钼/铜叠层，钼/铝叠层。\n\n[0054]介电层107设于缓冲层103上，并覆盖有源层104、栅极绝缘层105以及栅极层106，所述介电层107上设有第一过孔1071和第二过孔1072。第一过孔1071和第二过孔1072用源极或漏极材料填充，实现源漏极与有源层104的连接。介电层107作为源漏极层108和栅极层106的层间绝缘。介电层107的材料包括氧化硅、氮化硅及氮氧化硅的至少一种。\n\n[0055]源漏极层108和连接端1081设于介电层107上。源漏极层108通过介电层107上的第一过孔1071和第二过孔1072与有源层104的连接。其中，源漏极层108包括源漏极和电源电极。源漏极层108的材料包括钼、铜及铝的至少一种，具体可以包括但不限于钼/铜叠层，钼/铝/钼叠层。\n\n[0056]第一钝化层109设于介电层107上，并覆盖源漏极层108。第一钝化层109设有第三过孔1091和第四过孔1092。第一钝化层109的材料包括氧化硅、氮化硅及氮氧化硅的至少一种。\n\n[0057]像素电极层110设于第一钝化层109上，所述像素电极层110通过所述第三过孔1091与所述源漏极层108连接，通过所述第四过孔1092与所述连接端1081连接。像素电极层110的材料包括氧化铟锡。\n\n[0058]连接层111设于像素电极层110上。连接层111的材料包括铜或铜钼化合物。\n\n[0059]第二钝化层112设于第一钝化层109上，并覆盖部分所述连接层。第二钝化层112的材料包括氧化硅、氮化硅及氮氧化硅的至少一种。第二钝化层112用于保护连接层111不会与后续制程中的有机溶剂或有机膜发生反应而出现残留或者缺失。\n\n[0060]像素定义层113设于第二钝化层112上。像素定义层113具有掩膜板的作用，对第二钝化层112进行刻蚀。在一些其他实施例中，可利用黑色矩阵当作掩膜板对第二钝化层112进行刻蚀。\n\n[0061]参阅图2，本发明实施例提供一种微发光二极管的制备方法，其包括以下步骤。\n\n[0062]结合图3，步骤S210，提供一基板，在所述基板上依次形成一遮光层、一缓冲层、一有源层以及一栅极绝缘层。\n\n[0063]在本发明实施例中，基板101的材料可以为聚酰亚胺(Polyimide，简称PI)。\n\n[0064]遮光层102通过沉积的方式形成。遮光层102设于基板101上。遮光层102的材料包括钼、铜及铝的至少一种，具体可以包括但不限于钼，钼/铜叠层，铝/钼叠层等。\n\n[0065]缓冲层103通过沉积的方式形成。缓冲层103设于遮光层102上。缓冲层103的材料包括氧化硅、氮化硅、氮氧化硅、氧化铝及氮化铝的至少一种，具体可以包括但不限于氧化硅，氧化硅/氮化硅叠层，或氮化硅/氧化硅叠层，或氧化硅与氮化硅、氮氧化硅相互叠层，或氧化硅、氮化硅与氧化铝叠层，或氮化铝等。缓冲层103起到防止遮光层102的金属氧化。\n\n[0066]有源层104通过沉积并刻蚀的方式形成。有源层104设于缓冲层103上。有源层104的材料包括氧化铟镓锌或氧化铟锌。有源层104作为导电沟道。\n\n[0067]栅极绝缘层105通过沉积的方式形成。栅极绝缘层105设于有源层104上。栅极绝缘层105的材料包括氧化硅、氮化硅、氮氧化硅、氧化铝及氮化铝的至少一种，具体可以包括但不限于氧化硅，氧化硅/氮化硅叠层，或氮化硅/氧化硅叠层，或氧化硅与氮化硅、氮氧化硅相互叠层，或氧化硅、氮化硅与氧化铝叠层，或氮化铝等。栅极绝缘层105用于防止有源层104与栅极层106接触而短路，避免微发光二极管器件失效。\n\n[0068]结合图4，步骤S220，在所述栅极绝缘层上依次形成一栅极层以及一介电层，所述介电层上形成第一过孔和第二过孔。\n\n[0069]在本发明实施例中，栅极层106通过沉积的方式形成，并对栅极层106进行图案化操作。栅极层106设于栅极绝缘层105上。栅极层106的材料包括钼、铜及铝的至少一种，具体可以包括但不限于钼/铜叠层，钼/铝叠层。\n\n[0070]介电层107通过沉积的方式形成。介电层107设于缓冲层103上，并覆盖有源层104、栅极绝缘层105以及栅极层106，所述介电层107上设有第一过孔1071和第二过孔1072。第一过孔1071和第二过孔1072用源极或漏极材料填充，实现源漏极与有源层104的连接。介电层107作为源漏极层108和栅极层106的层间绝缘。介电层107的材料包括氧化硅、氮化硅及氮氧化硅的至少一种。\n\n[0071]结合图5，步骤S230，在所述介电层上形成一源漏极层和一连接端，所述源漏极层通过所述第一过孔和所述第二过孔与所述有源层连接。\n\n[0072]在本发明实施例中，源漏极层108通过沉积的方式形成。源漏极层108和连接端1081设于介电层107上。源漏极层108通过介电层107上的第一过孔1071和第二过孔1072与有源层104的连接。其中，源漏极层108包括源漏极和电源电极。源漏极层108的材料包括钼、铜及铝的至少一种，具体可以包括但不限于钼/铜叠层，钼/铝/钼叠层。\n\n[0073]结合图6，步骤S240，在所述源漏极层上形成一第一钝化层，所述第一钝化层上形成第三过孔和第四过孔。\n\n[0074]在本发明实施例中，第一钝化层109通过沉积的方式形成。第一钝化层109设于介电层107上，并覆盖源漏极层108。第一钝化层109设有第三过孔1091和第四过孔1092。第一钝化层109的材料包括氧化硅、氮化硅及氮氧化硅的至少一种。\n\n[0075]结合图7，步骤S250，在所述第一钝化层上形成一像素电极层，所述像素电极层通过所述第三过孔与所述源漏极层连接，通过所述第四过孔与所述连接端连接。\n\n[0076]在本发明实施例中，像素电极层110通过沉积的方式形成，并对像素电极层110进行图案化操作。像素电极层110设于第一钝化层109上，所述像素电极层110通过所述第三过孔1091与所述源漏极层108连接，通过所述第四过孔1092与所述连接端1081连接。像素电极层110的材料包括氧化铟锡。\n\n[0077]结合图8，步骤S260，在所述像素电极层上形成一连接层，并图案化。\n\n[0078]在本发明实施例中，连接层111通过沉积的方式形成，并对连接层111进行图案化操作。连接层111设于像素电极层110上。连接层111的材料包括铜或铜钼化合物。\n\n[0079]结合图9，步骤S270，在所述连接层上形成一第二钝化层，其中所述第二钝化层覆盖所述连接层。\n\n[0080]第二钝化层112通过沉积的方式形成。第二钝化层112设于第一钝化层109上，并覆盖部分所述连接层。第二钝化层112的材料包括氧化硅、氮化硅及氮氧化硅的至少一种。第二钝化层112用于保护连接层111不会与后续制程中的有机溶剂或有机膜发生反应而出现残留或者缺失。\n\n[0081]结合图10，步骤S280，在所述第二钝化层上形成以像素定义层，并图案化。\n\n[0082]结合图11，步骤290，以图案化后的像素定义层作为掩模版刻蚀所述第二钝化层，以裸露部分所述连接层。\n\n[0083]在本发明实施例中，利用像素定义层113作为掩膜板对第二钝化层112进行刻蚀。刻蚀的方式可以为干刻蚀。\n\n[0084]像素定义层113设于第二钝化层112上。像素定义层113具有掩膜板的作用，对第二钝化层112进行刻蚀。在一些其他实施例中，也可以利用黑色矩阵当作掩膜板对第二钝化层112进行刻蚀。\n\n[0085]本发明实施例提供的微发光二极管阵列基板及其制备方法，通过在连接层制备完成后，再形成一层钝化层，保护连接层不会与后续制程中的有机溶剂或有机膜发生反应而出现残留或者缺失，并且利用像素定义层或黑矩阵作为自对准掩膜板，对钝化层进行刻蚀，从而保留像素电极对应位置的连接层。\n\n[0086]以上对本发明实施例所提供的一种微发光二极管阵列基板及其制备方法进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。', '技术领域\n\n[0001]本发明属于显示技术领域，尤其涉及一种微发光二极管阵列基板及其制备方法。\n\n背景技术\n\n[0002]作为新兴显示技术，微发光二极管(MicroLED)显示相较于LCD、OLED显示有较多优势，如较低的功耗，较高的色域，较快的相应速率等，对封装水氧隔绝要求不高，被视为较有发展前景的一种显示技术。因此，较多面板厂家参与Micro LED技术开发之中。但是MicroLED显示还有诸多技术难点需要克服，如巨量转移，绑定等。\n\n[0003]对于绑定而言，需要保证薄膜晶体管连接层不被后续制程腐蚀，以达到与MicroLED形成良好的绑定。\n\n[0004]在薄膜晶体管制作中，连接层图案化之后还需要有有机层制程，连接层中的铜材料易与后续制程的有机溶剂或有机膜发生反应而出现残留或者缺失。\n\n[0005]因此，如何保护连接层不被破坏，是显示技术中的一项重要课题。\n\n发明内容\n\n[0006]本发明实施例提供一种微发光二极管阵列基板及其制备方法，通过在连接层制备完成后，再形成一层钝化层，保护连接层不会与后续制程中的有机溶剂或有机膜发生反应而出现残留或者缺失，并且利用像素定义层或黑矩阵作为自对准掩膜板，对钝化层进行刻蚀，从而保留像素电极对应位置的连接层。\n\n[0007]根据本发明的一方面，本发明提供微发光二极管阵列基板的制备方法，其包括以下步骤：\n\n[0008]提供一基板，在所述基板上依次形成一遮光层、一缓冲层、一有源层以及一栅极绝缘层；\n\n[0009]在所述栅极绝缘层上依次形成一栅极层以及一介电层，所述介电层上形成第一过孔和第二过孔；\n\n[0010]在所述介电层上形成一源漏极层和一连接端，所述源漏极层通过所述第一过孔和所述第二过孔与所述有源层连接；\n\n[0011]在所述源漏极层上形成一第一钝化层，所述第一钝化层上形成第三过孔和第四过孔；\n\n[0012]在所述第一钝化层上形成一像素电极层，所述像素电极层通过所述第三过孔与所述源漏极层连接，通过所述第四过孔与所述连接端连接；\n\n[0013]在所述像素电极层上形成一连接层，并图案化；\n\n[0014]在所述连接层上形成一第二钝化层，其中所述第二钝化层覆盖所述连接层；\n\n[0015]在所述第二钝化层上形成以像素定义层，并图案化；以及\n\n[0016]以图案化后的像素定义层作为掩模版刻蚀所述第二钝化层，以裸露部分所述连接层。\n\n[0017]进一步地，所述第一钝化层及所述第二钝化层均通过沉积的方式形成，其材料均包括氧化硅、氮化硅及氮氧化硅的至少一种。\n\n[0018]进一步地，所述像素电极层通过沉积的方式形成，其材料包括氧化铟锡。\n\n[0019]进一步地，所述连接层通过沉积的方式形成，其材料包括铜或铜钼化合物。\n\n[0020]进一步地，所述遮光层、所述栅极层及所述源漏极层均通过沉积的方式形成，且其材料均包括钼、铜及铝的至少一种。\n\n[0021]进一步地，所述缓冲层和所述栅极绝缘层均通过沉积的方式形成，其材料均包括氧化硅、氮化硅、氮氧化硅、氧化铝及氮化铝的至少一种。\n\n[0022]进一步地，所述有源层通过沉积并刻蚀的方式形成，其材料包括氧化铟镓锌或氧化铟锌。\n\n[0023]进一步地，所述介电层通过沉积的方式形成，并进行开孔已形成第一和第二过孔，所述介电层的材料包括氧化硅、氮化硅及氮氧化硅的至少一种。\n\n[0024]根据本发明的另一方面，本发明提供一种微发光二极管阵列基板，其包括：\n\n[0025]一基板；\n\n[0026]一遮光层，设于所述基板上；\n\n[0027]一缓冲层，设于所述遮光层上；\n\n[0028]一有源层，设于所述缓冲层上；\n\n[0029]一栅极绝缘层，设于所述有源层上；\n\n[0030]一栅极层，设于所述栅极绝缘层上；\n\n[0031]一介电层，设于所述缓冲层上，并覆盖所述有源层、所述栅极绝缘层以及栅极层，所述介电层上设有第一过孔和第二过孔；\n\n[0032]一源漏极层和连接端，设于所述介电层上，所述源漏极层通过所述第一过孔和所述第二过孔与所述有源层连接；\n\n[0033]一第一钝化层，设于介电层上，并覆盖源漏极层，所述第一钝化层设有第三过孔和第四过孔；\n\n[0034]一像素电极层，设于所述第一钝化层上，所述像素电极层通过所述第三过孔与所述源漏极层连接，通过所述第四过孔与所述连接端连接；\n\n[0035]一连接层，设于所述像素电极层上；\n\n[0036]一第二钝化层，设于所述第一钝化层上，并覆盖部分所述连接层；以及\n\n[0037]一像素定义层，设于所述第二钝化层上。\n\n[0038]本发明实施例所述微发光二极管阵列基板及其制备方法，通过在连接层制备完成后，再形成一层钝化层，保护连接层不会与后续制程中的有机溶剂或有机膜发生反应而出现残留或者缺失，并且利用像素定义层或黑矩阵作为自对准掩膜板，对钝化层进行刻蚀，从而保留像素电极对应位置的连接层。\n\n附图说明\n\n[0039]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其有益效果显而易见。\n\n[0040]图1是本发明一实施例提供的一种微发光二极管阵列基板的结构示意图。\n\n[0041]图2是本发明一实施例提供的一种微发光二极管阵列基板的制备方法的步骤流程示意图。\n\n[0042]图3至图11是本发明所述实施例提供的所述微发光二极管的制备方法的工艺流程示意图。\n\n具体实施方式\n\n[0043]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0044]本发明的说明书和权利要求书以及上述附图中的术语“第一”、“第二”、“第三”等(如果存在)是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。应当理解，这样描述的对象在适当情况下可以互换。此外，术语“包括”和“具有”以及他们的任何变形，意图在于覆盖不排他的包含。\n\n[0045]在具体实施方式中，下文论述的附图以及用来描述本发明公开的原理的各实施例仅用于说明，而不应解释为限制本发明公开的范围。所属领域的技术人员将理解，本发明的原理可在任何适当布置的系统中实施。将详细说明示例性实施方式，在附图中示出了这些实施方式的实例。此外，将参考附图详细描述根据示例性实施例的终端。附图中的相同附图标号指代相同的元件。\n\n[0046]本具体实施方式中使用的术语仅用来描述特定实施方式，而并不意图显示本发明的概念。除非上下文中有明确不同的意义，否则，以单数形式使用的表达涵盖复数形式的表达。在本发明说明书中，应理解，诸如“包括”、“具有”以及“含有”等术语意图说明存在本发明说明书中揭示的特征、数字、步骤、动作或其组合的可能性，而并不意图排除可存在或可添加一个或多个其他特征、数字、步骤、动作或其组合的可能性。附图中的相同参考标号指代相同部分。\n\n[0047]参阅图1，本发明实施例提供一种微发光二极管，包括基板101、遮光层102、缓冲层103、有源层104、栅极绝缘层105、栅极层106、介电层107、源漏极层108、第一钝化层109、像素电极层110、连接层111、第二钝化层112以及像素定义层113。\n\n[0048]具体地，基板101的材料可以为聚酰亚胺(Polyimide，简称PI)。\n\n[0049]遮光层102设于基板101上。遮光层102的材料包括钼、铜及铝的至少一种，具体可以包括但不限于钼，钼/铜叠层，铝/钼叠层等。\n\n[0050]缓冲层103设于遮光层102上。缓冲层103的材料包括氧化硅、氮化硅、氮氧化硅、氧化铝及氮化铝的至少一种，具体可以包括但不限于氧化硅，氧化硅/氮化硅叠层，或氮化硅/氧化硅叠层，或氧化硅与氮化硅、氮氧化硅相互叠层，或氧化硅、氮化硅与氧化铝叠层，或氮化铝等。缓冲层103起到防止遮光层102的金属氧化。\n\n[0051]有源层104设于缓冲层103上。有源层104的材料包括氧化铟镓锌或氧化铟锌。有源层104作为导电沟道。\n\n[0052]栅极绝缘层105设于有源层104上。栅极绝缘层105的材料包括氧化硅、氮化硅、氮氧化硅、氧化铝及氮化铝的至少一种，具体可以包括但不限于氧化硅，氧化硅/氮化硅叠层，或氮化硅/氧化硅叠层，或氧化硅与氮化硅、氮氧化硅相互叠层，或氧化硅、氮化硅与氧化铝叠层，或氮化铝等。栅极绝缘层105用于防止有源层104与栅极层106接触而短路，避免微发光二极管器件失效。\n\n[0053]栅极层106设于栅极绝缘层105上。栅极层106的材料包括钼、铜及铝的至少一种，具体可以包括但不限于钼/铜叠层，钼/铝叠层。\n\n[0054]介电层107设于缓冲层103上，并覆盖有源层104、栅极绝缘层105以及栅极层106，所述介电层107上设有第一过孔1071和第二过孔1072。第一过孔1071和第二过孔1072用源极或漏极材料填充，实现源漏极与有源层104的连接。介电层107作为源漏极层108和栅极层106的层间绝缘。介电层107的材料包括氧化硅、氮化硅及氮氧化硅的至少一种。\n\n[0055]源漏极层108和连接端1081设于介电层107上。源漏极层108通过介电层107上的第一过孔1071和第二过孔1072与有源层104的连接。其中，源漏极层108包括源漏极和电源电极。源漏极层108的材料包括钼、铜及铝的至少一种，具体可以包括但不限于钼/铜叠层，钼/铝/钼叠层。\n\n[0056]第一钝化层109设于介电层107上，并覆盖源漏极层108。第一钝化层109设有第三过孔1091和第四过孔1092。第一钝化层109的材料包括氧化硅、氮化硅及氮氧化硅的至少一种。\n\n[0057]像素电极层110设于第一钝化层109上，所述像素电极层110通过所述第三过孔1091与所述源漏极层108连接，通过所述第四过孔1092与所述连接端1081连接。像素电极层110的材料包括氧化铟锡。\n\n[0058]连接层111设于像素电极层110上。连接层111的材料包括铜或铜钼化合物。\n\n[0059]第二钝化层112设于第一钝化层109上，并覆盖部分所述连接层。第二钝化层112的材料包括氧化硅、氮化硅及氮氧化硅的至少一种。第二钝化层112用于保护连接层111不会与后续制程中的有机溶剂或有机膜发生反应而出现残留或者缺失。\n\n[0060]像素定义层113设于第二钝化层112上。像素定义层113具有掩膜板的作用，对第二钝化层112进行刻蚀。在一些其他实施例中，可利用黑色矩阵当作掩膜板对第二钝化层112进行刻蚀。\n\n[0061]参阅图2，本发明实施例提供一种微发光二极管的制备方法，其包括以下步骤。\n\n[0062]结合图3，步骤S210，提供一基板，在所述基板上依次形成一遮光层、一缓冲层、一有源层以及一栅极绝缘层。\n\n[0063]在本发明实施例中，基板101的材料可以为聚酰亚胺(Polyimide，简称PI)。\n\n[0064]遮光层102通过沉积的方式形成。遮光层102设于基板101上。遮光层102的材料包括钼、铜及铝的至少一种，具体可以包括但不限于钼，钼/铜叠层，铝/钼叠层等。\n\n[0065]缓冲层103通过沉积的方式形成。缓冲层103设于遮光层102上。缓冲层103的材料包括氧化硅、氮化硅、氮氧化硅、氧化铝及氮化铝的至少一种，具体可以包括但不限于氧化硅，氧化硅/氮化硅叠层，或氮化硅/氧化硅叠层，或氧化硅与氮化硅、氮氧化硅相互叠层，或氧化硅、氮化硅与氧化铝叠层，或氮化铝等。缓冲层103起到防止遮光层102的金属氧化。\n\n[0066]有源层104通过沉积并刻蚀的方式形成。有源层104设于缓冲层103上。有源层104的材料包括氧化铟镓锌或氧化铟锌。有源层104作为导电沟道。\n\n[0067]栅极绝缘层105通过沉积的方式形成。栅极绝缘层105设于有源层104上。栅极绝缘层105的材料包括氧化硅、氮化硅、氮氧化硅、氧化铝及氮化铝的至少一种，具体可以包括但不限于氧化硅，氧化硅/氮化硅叠层，或氮化硅/氧化硅叠层，或氧化硅与氮化硅、氮氧化硅相互叠层，或氧化硅、氮化硅与氧化铝叠层，或氮化铝等。栅极绝缘层105用于防止有源层104与栅极层106接触而短路，避免微发光二极管器件失效。\n\n[0068]结合图4，步骤S220，在所述栅极绝缘层上依次形成一栅极层以及一介电层，所述介电层上形成第一过孔和第二过孔。\n\n[0069]在本发明实施例中，栅极层106通过沉积的方式形成，并对栅极层106进行图案化操作。栅极层106设于栅极绝缘层105上。栅极层106的材料包括钼、铜及铝的至少一种，具体可以包括但不限于钼/铜叠层，钼/铝叠层。\n\n[0070]介电层107通过沉积的方式形成。介电层107设于缓冲层103上，并覆盖有源层104、栅极绝缘层105以及栅极层106，所述介电层107上设有第一过孔1071和第二过孔1072。第一过孔1071和第二过孔1072用源极或漏极材料填充，实现源漏极与有源层104的连接。介电层107作为源漏极层108和栅极层106的层间绝缘。介电层107的材料包括氧化硅、氮化硅及氮氧化硅的至少一种。\n\n[0071]结合图5，步骤S230，在所述介电层上形成一源漏极层和一连接端，所述源漏极层通过所述第一过孔和所述第二过孔与所述有源层连接。\n\n[0072]在本发明实施例中，源漏极层108通过沉积的方式形成。源漏极层108和连接端1081设于介电层107上。源漏极层108通过介电层107上的第一过孔1071和第二过孔1072与有源层104的连接。其中，源漏极层108包括源漏极和电源电极。源漏极层108的材料包括钼、铜及铝的至少一种，具体可以包括但不限于钼/铜叠层，钼/铝/钼叠层。\n\n[0073]结合图6，步骤S240，在所述源漏极层上形成一第一钝化层，所述第一钝化层上形成第三过孔和第四过孔。\n\n[0074]在本发明实施例中，第一钝化层109通过沉积的方式形成。第一钝化层109设于介电层107上，并覆盖源漏极层108。第一钝化层109设有第三过孔1091和第四过孔1092。第一钝化层109的材料包括氧化硅、氮化硅及氮氧化硅的至少一种。\n\n[0075]结合图7，步骤S250，在所述第一钝化层上形成一像素电极层，所述像素电极层通过所述第三过孔与所述源漏极层连接，通过所述第四过孔与所述连接端连接。\n\n[0076]在本发明实施例中，像素电极层110通过沉积的方式形成，并对像素电极层110进行图案化操作。像素电极层110设于第一钝化层109上，所述像素电极层110通过所述第三过孔1091与所述源漏极层108连接，通过所述第四过孔1092与所述连接端1081连接。像素电极层110的材料包括氧化铟锡。\n\n[0077]结合图8，步骤S260，在所述像素电极层上形成一连接层，并图案化。\n\n[0078]在本发明实施例中，连接层111通过沉积的方式形成，并对连接层111进行图案化操作。连接层111设于像素电极层110上。连接层111的材料包括铜或铜钼化合物。\n\n[0079]结合图9，步骤S270，在所述连接层上形成一第二钝化层，其中所述第二钝化层覆盖所述连接层。\n\n[0080]第二钝化层112通过沉积的方式形成。第二钝化层112设于第一钝化层109上，并覆盖部分所述连接层。第二钝化层112的材料包括氧化硅、氮化硅及氮氧化硅的至少一种。第二钝化层112用于保护连接层111不会与后续制程中的有机溶剂或有机膜发生反应而出现残留或者缺失。\n\n[0081]结合图10，步骤S280，在所述第二钝化层上形成以像素定义层，并图案化。\n\n[0082]结合图11，步骤290，以图案化后的像素定义层作为掩模版刻蚀所述第二钝化层，以裸露部分所述连接层。\n\n[0083]在本发明实施例中，利用像素定义层113作为掩膜板对第二钝化层112进行刻蚀。刻蚀的方式可以为干刻蚀。\n\n[0084]像素定义层113设于第二钝化层112上。像素定义层113具有掩膜板的作用，对第二钝化层112进行刻蚀。在一些其他实施例中，也可以利用黑色矩阵当作掩膜板对第二钝化层112进行刻蚀。\n\n[0085]本发明实施例提供的微发光二极管阵列基板及其制备方法，通过在连接层制备完成后，再形成一层钝化层，保护连接层不会与后续制程中的有机溶剂或有机膜发生反应而出现残留或者缺失，并且利用像素定义层或黑矩阵作为自对准掩膜板，对钝化层进行刻蚀，从而保留像素电极对应位置的连接层。\n\n[0086]以上对本发明实施例所提供的一种微发光二极管阵列基板及其制备方法进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10768, 23822, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种背板单元及其制造方法、显示装置。\n\n背景技术\n\n[0002]目前，Mini-LED背板制作过程中需要黑色矩阵(Black Matrix)层作为遮光层，以避免入射至Mini-LED背板上的光线对背板上的器件性能造成影响。其中，遮光层需要依次通过清洗、涂胶、曝光、显影等步骤制作而成。如图1所示，其为传统技术中显影液腐蚀铜制金属垫的示意图，在显影过程中，显影液会腐蚀Mini-LED背板上用于焊接Mini-LED而裸漏的金属垫，导致部分金属扩散至有机物黑色有机层形成显影阻挡层，导致有机黑色有机层出现残留。\n\n[0003]因此，有必要提出一种技术方案以解决图案化黑色有机层时由于显影液腐蚀裸漏的金属垫导致黑色有机层残留的问题。\n\n发明内容\n\n[0004]本申请的目的在于提供一种背板单元及其制造方法、显示装置，以避免传统显影液对黑色有机层显影时对裸露金属层腐蚀的问题。\n\n[0005]为实现上述目的，本申请提供一种背板单元的制造方法，所述制造方法包括如下步骤：\n\n[0006]于阵列基板上形成光阻层，所述阵列基板包括基板、阵列层以及发光元件，所述阵列层形成于所述基板上，所述发光元件设置于所述阵列层上，所述光阻层形成于所述阵列层以及所述发光元件远离所述基板的一侧；\n\n[0007]至少对所述光阻层对应所述发光元件的部分进行曝光；\n\n[0008]至少于所述光阻层远离所述阵列基板的一侧形成遮光层，所述遮光层至少使所述发光元件侧面部分显露；\n\n[0009]利用剥离液对所述发光元件上的光阻层进行侧面剥离，得所述背板单元。\n\n[0010]在上述背板单元的制造方法中，至少对所述光阻层对应所述发光元件的部分进行曝光包括如下步骤：\n\n[0011]对所述光阻层进行整面曝光。\n\n[0012]在上述背板单元的制造方法中，所述光阻层对应所述发光元件的部分的截面为倒梯形。\n\n[0013]在上述背板单元的制造方法中，至少于所述光阻层远离所述阵列基板的一侧形成遮光层包括如下步骤：\n\n[0014]至少于所述光阻层远离所述阵列基板的表面上形成保护层，所述保护层包括反射层。\n\n[0015]在上述背板单元的制造方法中，采用化学沉积、物理沉积中的至少一种形成所述保护层。\n\n[0016]在上述背板单元的制造方法中，至少于所述光阻层远离所述阵列基板的一侧形成遮光层包括如下步骤：\n\n[0017]于所述光阻层远离所述阵列基板的一侧形成黑色有机层，所述黑色有机层的厚度和所述光阻层的厚度之和小于所述发光元件的高度。\n\n[0018]在上述背板单元的制造方法中，所述剥离液包括单乙醇胺以及二甲基亚砜。\n\n[0019]在上述背板单元的制造方法中，所述发光元件为亚毫米发光二极管、微型发光二极管以及发光二极管中的任意一种。\n\n[0020]一种背板单元，所述背板单元包括阵列基板、光阻层以及遮光层，\n\n[0021]所述阵列基板包括基板、阵列层以及发光元件，所述阵列层设置于所述基板上，所述发光元件设置于所述阵列层上；\n\n[0022]所述光阻层形成于所述阵列层远离基板的一侧；\n\n[0023]所述遮光层覆盖所述光阻层。\n\n[0024]一种显示装置，所述显示装置包括上述背板单元。\n\n[0025]有益效果：本申请提供一种背板单元及其制造方法、显示装置，制造方法包括如下步骤：于阵列基板上形成光阻层，阵列基板包括基板、阵列层以及发光元件，阵列层形成于基板上，发光元件设置于阵列层上，光阻层形成于阵列层以及发光元件远离基板的一侧；至少对光阻层对应发光元件的部分进行曝光；至少于光阻层远离阵列基板的一侧形成遮光层，遮光层至少使发光元件侧面部分显露；利用剥离液对发光元件上的光阻层进行侧面剥离，得背板单元。利用发光元件高度大于阵列层厚度，发光元件上光阻层侧面显露，利用剥离液对发光元件上曝光的光阻层进行侧面渗透剥离，剥离液不会腐蚀金属，避免传统显影液对黑色有机层显影时对裸露金属层腐蚀。且由于遮光层的图案化在发光元件设置于阵列层上之后，避免传统技术中黑色有机层图案化制程的烘烤过程造成裸漏的金属氧化，影响发光元件的焊接在金属上的效果。此外，遮光层形成于发光元件设置于阵列层上之后，可以避免用于放置发光元件的冗余空间为后续形成的遮光层所覆盖，避免传统技术中先形成遮光层后进行发光元件的绑定导致发光元件周围的冗余空间出现漏光。\n\n附图说明\n\n[0026]图1为传统技术中显影液腐蚀铜制金属垫的示意图；\n\n[0027]图2为本申请实施例背板单元的制造方法的流程示意图；\n\n[0028]图3A-3E为按照图2所示流程示意图制造背板单元的过程示意图。\n\n具体实施方式\n\n[0029]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0030]请参阅图2，其为本申请实施例背板单元的制造方法的流程示意图。背板单元的制造方法包括如下步骤：\n\n[0031]S100：于阵列基板上形成光阻层，阵列基板包括基板、阵列层以及发光元件，阵列层形成于基板上，发光元件设置于阵列层上，光阻层形成于阵列层以及发光元件远离基板的一侧。\n\n[0032]如图3B所示，阵列基板100包括基板101、阵列层102以及发光元件103。如图3A所示，阵列层102包括设置于基板101上阵列排布的多个薄膜晶体管1021以及设置于基板101上的两个导电电极1022。发光元件103连接在两个导电电极1022上。\n\n[0033]薄膜晶体管1021可以为背沟道蚀刻型(Back Channel Etching，BCE)薄膜晶体管，也可以为刻蚀阻挡型(Etching Stop Layer，ESL)薄膜晶体管。薄膜晶体管可以为低温多晶硅薄膜晶体管，也可以为金属氧化物薄膜晶体管或非晶硅薄膜晶体管。薄膜晶体管可以为底栅型薄膜晶体管，也可以为顶栅型薄膜晶体管。\n\n[0034]为了避免入射至基板101的光入射至薄膜晶体管1021的有源层而影响薄膜晶体管的电性能，基板101上对应薄膜晶体管的有源层设置有遮光层104。在阵列层102和遮光层之间设置有缓冲层105，以避免基板101中的离子扩散至薄膜晶体管1021而影响薄膜晶体管1021的电性能。\n\n[0035]具体地，薄膜晶体管1021为背沟道蚀刻型薄膜晶体管，薄膜晶体管为金属氧化物薄膜晶体管，且薄膜晶体管为顶栅型薄膜晶体管。薄膜晶体管1021的有源层为铟镓锌氧化物IGZO。薄膜晶体管1021包括依次设置于缓冲层105上有源层、形成于有源层上的栅极绝缘层、形成于栅极绝缘层上的栅极、覆盖有源层、栅极绝缘层以及栅极的间绝缘层以及源漏电极，源电极通过间绝缘层上的过孔与有源层接触且通过间绝缘层以及缓冲层105上连通的过孔与遮光层104连接，漏电极通过间绝缘层上的过孔与有源层连接。\n\n[0036]阵列层102还包括与源漏电极同层设置的导电构件，导电构件与源漏电极是通过同一制程形成。阵列层102还包括覆盖源漏电极以及导电构件的钝化层106。\n\n[0037]两个导电电极1022形成于钝化层106上，一导电电极1022通过钝化层106上的过孔与漏电极连接，另一个导电电极1022通过钝化层106上的过孔与导电构件连接。导电电极1022包括依次设置于钝化层106上的氧化铟锡层、钼层以及铜层。两个导电电极1022通过焊锡或有机导电膜与发光元件103连接。\n\n[0038]发光元件103为亚毫米发光二极管(Mini-LED)、微型发光二极管(Micro-LED)以及发光二极管(LED)中的任意一种。其中，亚毫米发光二极管的尺寸为微米级(100微米-200微米)，例如为100微米×100微米。发光二极管的尺寸为毫米级(mm)，例如为3mm×3mm。微型发光二极管的尺寸小于100微米。在完成阵列层102后，发光元件103为亚毫米发光二极管时，发光元件103通过表面贴装技术(Surface Mounted Technology，SMT)LED转印或巨量转移实现。一般而言，用于绑定发光元件103的导电电极1022周围的空间大于发光元件103的尺寸，以便于设置发光元件103时有冗余的空间，通过在完成阵列层102后完成发光元件103的绑定有利于后续形成的遮光层对冗余空间进行遮盖，而传统技术中先完成遮光层再绑定发光元件会导致冗余空间出现漏光。\n\n[0039]需要说明的是，一般而言，由于阵列层102组成膜层的厚度多为纳米级。发光元件103设置在阵列层102上后，由于发光元件103的高度远大于阵列层102的厚度，发光元件103与阵列层102之间会形成明显的段差。\n\n[0040]具体地，如图3C所示，通过涂布以在阵列层102以及发光元件103远离基板101的表面上形成光阻层108。光阻层108的厚度为1微米-5微米，例如光阻层108为3微米。光阻层108的制备材料为正性光阻材料。一方面，光阻层108起到减少段差的作用，有利于后续发光元件103的封装，另一方面，光阻层108在剥离液的作用下发生侧面剥离，可以使光阻108上的遮光层也被剥离。光阻层108的使用使得光阻层的剥离可以不使用具有腐蚀性的氢氧化钾等显影液，而可以使用不具有腐蚀作用的剥离液。\n\n[0041]进一步地，光阻层108对应发光元件103的部分的截面为倒梯形，以使得剥离液更容易渗透至发光元件103上光阻层108的底部，将光阻层108对应发光元件103的部分去除。\n\n[0042]S101：至少对光阻层对应发光元件的部分进行曝光。\n\n[0043]通过对光阻层108对应发光元件103的部分进行曝光，以使后续剥离液能将光阻层108对应发光元件103的部分去除，从而将发光元件103上光阻层108上的遮光层去除，避免遮光层影响发光元件的发光。\n\n[0044]进一步地，对光阻层108进行整面曝光。通过光阻层108进行整面曝光，以减少一道光罩制程，简化背板单元的制造工艺。\n\n[0045]S102：至少于光阻层远离阵列基板的一侧形成遮光层，遮光层至少使发光元件侧面部分显露。\n\n[0046]在本实施例中，可以至少于光阻层远离阵列基板的一侧形成保护层109，保护层109包括反射层，以形成遮光层。保护层109用于保护阵列层102上的光阻层108，以避免阵列层102上的光阻层108在发光元件103上的光阻层108被剥离时被腐蚀。也可以于光阻层108远离阵列阵列基板100的一侧形成黑色有机层107，以形成遮光层。黑色有机层107的厚度和光阻层108的厚度之和小于发光元件103的高度，以有利于发光元件103与阵列层102上的黑色有机层107之间形成段差，黑色有机层107一方面起到遮光作用，另一方面起到减小段差的作用，有利于后续发光元件103的封装。\n\n[0047]进一步地，黑色有机层107的厚度和光阻层108的厚度之和小于发光元件103的PN结的高度。\n\n[0048]具体地，如图3C所示，在形成光阻层108后，通过在光阻层108上涂布黑色有机材料，以在阵列层102以及发光元件103远离基板101的一侧形成黑色有机层107。黑色有机层107的厚度为0.8微米-1.2微米，例如黑色有机层107为1微米。黑色有机层107与传统黑色矩阵层相同。黑色有机层107完成后，在对黑色有机层107进行整面曝光的同时，也对光阻层108进行整面曝光。\n\n[0049]如图3D所示，采用化学沉积、物理沉积中的至少一种形成保护层109。保护层109不受剥离液的腐蚀，以起到保护阵列层102上黑色有机层107以及光阻层108的作用。化学沉积以及物理沉积的台阶覆盖能力差，导致发光元件103的侧面无法完全覆盖，使发光元件103侧面部分显露。\n\n[0050]进一步地，采用物理沉积形成保护层109，物理沉积的台阶覆盖力更小，更有利于形成不连续的保护层，使得发光元件的侧面部分显露，更有利于后续发光元件上光阻层的剥离。\n\n[0051]为了便于后续从侧面采用显影液剥离光阻层108、黑色有机层107以及保护层109，可以至少使发光元件103侧面的光阻层108显露。\n\n[0052]在本实施例中，保护层109包括反射层，以对入射至背板单元的光进行反射，避免光从正面入射至薄膜晶体管电影响薄膜晶体管的性能。反射层包括于黑色有机层107远离阵列基板100一侧形成的金属层。金属层的制备材料为铝、钼、铜中的至少一种。金属层是通过溅射沉积(物理沉积)形成。可以理解的是，反射层也可以为不同折射率的绝缘层组成，例如氮化硅、氧化硅、二氧化钛的叠层等。反射层也可以为金属层以及绝缘层的叠层。绝缘层通过化学沉积形成。\n\n[0053]进一步地，保护层109还包括形成于反射层和黑色有机层之间的无机绝缘层。无机绝缘层为氮化硅层，以进一步起到保护阵列层102上黑色有机层107的作用。\n\n[0054]S103：利用剥离液对发光元件上的光阻层进行侧面剥离，得背板单元。\n\n[0055]具体地，如图3E所示，利用剥离液对发光元件103的侧面进行渗透剥离。由于发光元件103远离阵列层102的表面距离阵列层102上的膜层存在段差，可以实现局部光阻层108的剥离。阵列层102上的黑色有机层107以及光阻层108为保护层109保护，故阵列层102上的剥离液将阵列层102上的光阻层108剥离掉。剥离液从侧面渗透至发光元件103上经过曝光处理的光阻层108，使得发光元件103上的光阻层108、黑色有机层107以及保护层109去除，无光罩实现遮光层的图案化，且由于发光元件103在形成黑色有机层之前设置导电电极1022上，导电电极1022不会为剥离液腐蚀，且不会经过高温烘烤制程，也不会出现导电电极上的铜层氧化等问题。另外，本申请背板单元的制造方法还可以避免阵列基板上用于绑定驱动芯片的金属引脚被腐蚀。\n\n[0056]在本实施例中，剥离液包括单乙醇胺以及二甲基亚砜，二甲基亚砜对曝光后的光阻层起到膨润作用，单乙醇胺起到浸润光阻层与发光元件之间界面以使光阻层脱离并溶解的作用，两者配合以实现光阻层的剥离。且剥离液的选择不会造成腐蚀。\n\n[0057]需要说明的是，发明人经过实验验证，剥离液从侧面渗透剥离光阻层不会对发光元件103造成腐蚀。\n\n[0058]本申请还提供一种背板单元。背板单元可以为背光模组，也可以为显示面板。背板单元为背光模组时，发光元件为亚毫米发光二极管，背光模组作为背光源以提供背光。背板单元为显示面板时，背板单元用于显示，发光元件为微米发光二极管。背板单元包括阵列基板、光阻层以及遮光层。\n\n[0059]具体地，发光元件为亚毫米发光二极管，且背板单元为背光模组。\n\n[0060]阵列基板包括基板、阵列层以及发光元件，阵列层设置于基板上，发光元件设置于阵列层上。阵列层的组成如前所述，此处不作详述。\n\n[0061]光阻层形成于阵列层远离基板的一侧。\n\n[0062]在本实施例中，遮光层包括保护层，保护层包括反射层，通过反射层以对入射至背板单元的光进行反射，避免光入射至薄膜晶体管而影响薄膜晶体管的性能。且当背板单元为显示面板时，反射层能提高反光率/外量子效率提升。\n\n[0063]在本实施例中，遮光层还可以包括设置于保护层和光阻层之间的黑色有机层，以减小发光元件顶部与遮光层之间的段差，便于后续发光元件的封装。\n\n[0064]在本实施例中，反射层包括于黑色有机层远离阵列基板一侧形成的金属层。\n\n[0065]本申请还提供一种显示装置，显示装置包括上述背板单元。\n\n[0066]以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种背板单元及其制造方法、显示装置。\n\n背景技术\n\n[0002]目前，Mini-LED背板制作过程中需要黑色矩阵(Black Matrix)层作为遮光层，以避免入射至Mini-LED背板上的光线对背板上的器件性能造成影响。其中，遮光层需要依次通过清洗、涂胶、曝光、显影等步骤制作而成。如图1所示，其为传统技术中显影液腐蚀铜制金属垫的示意图，在显影过程中，显影液会腐蚀Mini-LED背板上用于焊接Mini-LED而裸漏的金属垫，导致部分金属扩散至有机物黑色有机层形成显影阻挡层，导致有机黑色有机层出现残留。\n\n[0003]因此，有必要提出一种技术方案以解决图案化黑色有机层时由于显影液腐蚀裸漏的金属垫导致黑色有机层残留的问题。\n\n发明内容\n\n[0004]本申请的目的在于提供一种背板单元及其制造方法、显示装置，以避免传统显影液对黑色有机层显影时对裸露金属层腐蚀的问题。\n\n[0005]为实现上述目的，本申请提供一种背板单元的制造方法，所述制造方法包括如下步骤：\n\n[0006]于阵列基板上形成光阻层，所述阵列基板包括基板、阵列层以及发光元件，所述阵列层形成于所述基板上，所述发光元件设置于所述阵列层上，所述光阻层形成于所述阵列层以及所述发光元件远离所述基板的一侧；\n\n[0007]至少对所述光阻层对应所述发光元件的部分进行曝光；\n\n[0008]至少于所述光阻层远离所述阵列基板的一侧形成遮光层，所述遮光层至少使所述发光元件侧面部分显露；\n\n[0009]利用剥离液对所述发光元件上的光阻层进行侧面剥离，得所述背板单元。\n\n[0010]在上述背板单元的制造方法中，至少对所述光阻层对应所述发光元件的部分进行曝光包括如下步骤：\n\n[0011]对所述光阻层进行整面曝光。\n\n[0012]在上述背板单元的制造方法中，所述光阻层对应所述发光元件的部分的截面为倒梯形。\n\n[0013]在上述背板单元的制造方法中，至少于所述光阻层远离所述阵列基板的一侧形成遮光层包括如下步骤：\n\n[0014]至少于所述光阻层远离所述阵列基板的表面上形成保护层，所述保护层包括反射层。\n\n[0015]在上述背板单元的制造方法中，采用化学沉积、物理沉积中的至少一种形成所述保护层。\n\n[0016]在上述背板单元的制造方法中，至少于所述光阻层远离所述阵列基板的一侧形成遮光层包括如下步骤：\n\n[0017]于所述光阻层远离所述阵列基板的一侧形成黑色有机层，所述黑色有机层的厚度和所述光阻层的厚度之和小于所述发光元件的高度。\n\n[0018]在上述背板单元的制造方法中，所述剥离液包括单乙醇胺以及二甲基亚砜。\n\n[0019]在上述背板单元的制造方法中，所述发光元件为亚毫米发光二极管、微型发光二极管以及发光二极管中的任意一种。\n\n[0020]一种背板单元，所述背板单元包括阵列基板、光阻层以及遮光层，\n\n[0021]所述阵列基板包括基板、阵列层以及发光元件，所述阵列层设置于所述基板上，所述发光元件设置于所述阵列层上；\n\n[0022]所述光阻层形成于所述阵列层远离基板的一侧；\n\n[0023]所述遮光层覆盖所述光阻层。\n\n[0024]一种显示装置，所述显示装置包括上述背板单元。\n\n[0025]有益效果：本申请提供一种背板单元及其制造方法、显示装置，制造方法包括如下步骤：于阵列基板上形成光阻层，阵列基板包括基板、阵列层以及发光元件，阵列层形成于基板上，发光元件设置于阵列层上，光阻层形成于阵列层以及发光元件远离基板的一侧；至少对光阻层对应发光元件的部分进行曝光；至少于光阻层远离阵列基板的一侧形成遮光层，遮光层至少使发光元件侧面部分显露；利用剥离液对发光元件上的光阻层进行侧面剥离，得背板单元。利用发光元件高度大于阵列层厚度，发光元件上光阻层侧面显露，利用剥离液对发光元件上曝光的光阻层进行侧面渗透剥离，剥离液不会腐蚀金属，避免传统显影液对黑色有机层显影时对裸露金属层腐蚀。且由于遮光层的图案化在发光元件设置于阵列层上之后，避免传统技术中黑色有机层图案化制程的烘烤过程造成裸漏的金属氧化，影响发光元件的焊接在金属上的效果。此外，遮光层形成于发光元件设置于阵列层上之后，可以避免用于放置发光元件的冗余空间为后续形成的遮光层所覆盖，避免传统技术中先形成遮光层后进行发光元件的绑定导致发光元件周围的冗余空间出现漏光。\n\n附图说明\n\n[0026]图1为传统技术中显影液腐蚀铜制金属垫的示意图；\n\n[0027]图2为本申请实施例背板单元的制造方法的流程示意图；\n\n[0028]图3A-3E为按照图2所示流程示意图制造背板单元的过程示意图。\n\n具体实施方式\n\n[0029]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0030]请参阅图2，其为本申请实施例背板单元的制造方法的流程示意图。背板单元的制造方法包括如下步骤：\n\n[0031]S100：于阵列基板上形成光阻层，阵列基板包括基板、阵列层以及发光元件，阵列层形成于基板上，发光元件设置于阵列层上，光阻层形成于阵列层以及发光元件远离基板的一侧。\n\n[0032]如图3B所示，阵列基板100包括基板101、阵列层102以及发光元件103。如图3A所示，阵列层102包括设置于基板101上阵列排布的多个薄膜晶体管1021以及设置于基板101上的两个导电电极1022。发光元件103连接在两个导电电极1022上。\n\n[0033]薄膜晶体管1021可以为背沟道蚀刻型(Back Channel Etching，BCE)薄膜晶体管，也可以为刻蚀阻挡型(Etching Stop Layer，ESL)薄膜晶体管。薄膜晶体管可以为低温多晶硅薄膜晶体管，也可以为金属氧化物薄膜晶体管或非晶硅薄膜晶体管。薄膜晶体管可以为底栅型薄膜晶体管，也可以为顶栅型薄膜晶体管。\n\n[0034]为了避免入射至基板101的光入射至薄膜晶体管1021的有源层而影响薄膜晶体管的电性能，基板101上对应薄膜晶体管的有源层设置有遮光层104。在阵列层102和遮光层之间设置有缓冲层105，以避免基板101中的离子扩散至薄膜晶体管1021而影响薄膜晶体管1021的电性能。\n\n[0035]具体地，薄膜晶体管1021为背沟道蚀刻型薄膜晶体管，薄膜晶体管为金属氧化物薄膜晶体管，且薄膜晶体管为顶栅型薄膜晶体管。薄膜晶体管1021的有源层为铟镓锌氧化物IGZO。薄膜晶体管1021包括依次设置于缓冲层105上有源层、形成于有源层上的栅极绝缘层、形成于栅极绝缘层上的栅极、覆盖有源层、栅极绝缘层以及栅极的间绝缘层以及源漏电极，源电极通过间绝缘层上的过孔与有源层接触且通过间绝缘层以及缓冲层105上连通的过孔与遮光层104连接，漏电极通过间绝缘层上的过孔与有源层连接。\n\n[0036]阵列层102还包括与源漏电极同层设置的导电构件，导电构件与源漏电极是通过同一制程形成。阵列层102还包括覆盖源漏电极以及导电构件的钝化层106。\n\n[0037]两个导电电极1022形成于钝化层106上，一导电电极1022通过钝化层106上的过孔与漏电极连接，另一个导电电极1022通过钝化层106上的过孔与导电构件连接。导电电极1022包括依次设置于钝化层106上的氧化铟锡层、钼层以及铜层。两个导电电极1022通过焊锡或有机导电膜与发光元件103连接。\n\n[0038]发光元件103为亚毫米发光二极管(Mini-LED)、微型发光二极管(Micro-LED)以及发光二极管(LED)中的任意一种。其中，亚毫米发光二极管的尺寸为微米级(100微米-200微米)，例如为100微米×100微米。发光二极管的尺寸为毫米级(mm)，例如为3mm×3mm。微型发光二极管的尺寸小于100微米。在完成阵列层102后，发光元件103为亚毫米发光二极管时，发光元件103通过表面贴装技术(Surface Mounted Technology，SMT)LED转印或巨量转移实现。一般而言，用于绑定发光元件103的导电电极1022周围的空间大于发光元件103的尺寸，以便于设置发光元件103时有冗余的空间，通过在完成阵列层102后完成发光元件103的绑定有利于后续形成的遮光层对冗余空间进行遮盖，而传统技术中先完成遮光层再绑定发光元件会导致冗余空间出现漏光。\n\n[0039]需要说明的是，一般而言，由于阵列层102组成膜层的厚度多为纳米级。发光元件103设置在阵列层102上后，由于发光元件103的高度远大于阵列层102的厚度，发光元件103与阵列层102之间会形成明显的段差。\n\n[0040]具体地，如图3C所示，通过涂布以在阵列层102以及发光元件103远离基板101的表面上形成光阻层108。光阻层108的厚度为1微米-5微米，例如光阻层108为3微米。光阻层108的制备材料为正性光阻材料。一方面，光阻层108起到减少段差的作用，有利于后续发光元件103的封装，另一方面，光阻层108在剥离液的作用下发生侧面剥离，可以使光阻108上的遮光层也被剥离。光阻层108的使用使得光阻层的剥离可以不使用具有腐蚀性的氢氧化钾等显影液，而可以使用不具有腐蚀作用的剥离液。\n\n[0041]进一步地，光阻层108对应发光元件103的部分的截面为倒梯形，以使得剥离液更容易渗透至发光元件103上光阻层108的底部，将光阻层108对应发光元件103的部分去除。\n\n[0042]S101：至少对光阻层对应发光元件的部分进行曝光。\n\n[0043]通过对光阻层108对应发光元件103的部分进行曝光，以使后续剥离液能将光阻层108对应发光元件103的部分去除，从而将发光元件103上光阻层108上的遮光层去除，避免遮光层影响发光元件的发光。\n\n[0044]进一步地，对光阻层108进行整面曝光。通过光阻层108进行整面曝光，以减少一道光罩制程，简化背板单元的制造工艺。\n\n[0045]S102：至少于光阻层远离阵列基板的一侧形成遮光层，遮光层至少使发光元件侧面部分显露。\n\n[0046]在本实施例中，可以至少于光阻层远离阵列基板的一侧形成保护层109，保护层109包括反射层，以形成遮光层。保护层109用于保护阵列层102上的光阻层108，以避免阵列层102上的光阻层108在发光元件103上的光阻层108被剥离时被腐蚀。也可以于光阻层108远离阵列阵列基板100的一侧形成黑色有机层107，以形成遮光层。黑色有机层107的厚度和光阻层108的厚度之和小于发光元件103的高度，以有利于发光元件103与阵列层102上的黑色有机层107之间形成段差，黑色有机层107一方面起到遮光作用，另一方面起到减小段差的作用，有利于后续发光元件103的封装。\n\n[0047]进一步地，黑色有机层107的厚度和光阻层108的厚度之和小于发光元件103的PN结的高度。\n\n[0048]具体地，如图3C所示，在形成光阻层108后，通过在光阻层108上涂布黑色有机材料，以在阵列层102以及发光元件103远离基板101的一侧形成黑色有机层107。黑色有机层107的厚度为0.8微米-1.2微米，例如黑色有机层107为1微米。黑色有机层107与传统黑色矩阵层相同。黑色有机层107完成后，在对黑色有机层107进行整面曝光的同时，也对光阻层108进行整面曝光。\n\n[0049]如图3D所示，采用化学沉积、物理沉积中的至少一种形成保护层109。保护层109不受剥离液的腐蚀，以起到保护阵列层102上黑色有机层107以及光阻层108的作用。化学沉积以及物理沉积的台阶覆盖能力差，导致发光元件103的侧面无法完全覆盖，使发光元件103侧面部分显露。\n\n[0050]进一步地，采用物理沉积形成保护层109，物理沉积的台阶覆盖力更小，更有利于形成不连续的保护层，使得发光元件的侧面部分显露，更有利于后续发光元件上光阻层的剥离。\n\n[0051]为了便于后续从侧面采用显影液剥离光阻层108、黑色有机层107以及保护层109，可以至少使发光元件103侧面的光阻层108显露。\n\n[0052]在本实施例中，保护层109包括反射层，以对入射至背板单元的光进行反射，避免光从正面入射至薄膜晶体管电影响薄膜晶体管的性能。反射层包括于黑色有机层107远离阵列基板100一侧形成的金属层。金属层的制备材料为铝、钼、铜中的至少一种。金属层是通过溅射沉积(物理沉积)形成。可以理解的是，反射层也可以为不同折射率的绝缘层组成，例如氮化硅、氧化硅、二氧化钛的叠层等。反射层也可以为金属层以及绝缘层的叠层。绝缘层通过化学沉积形成。\n\n[0053]进一步地，保护层109还包括形成于反射层和黑色有机层之间的无机绝缘层。无机绝缘层为氮化硅层，以进一步起到保护阵列层102上黑色有机层107的作用。\n\n[0054]S103：利用剥离液对发光元件上的光阻层进行侧面剥离，得背板单元。\n\n[0055]具体地，如图3E所示，利用剥离液对发光元件103的侧面进行渗透剥离。由于发光元件103远离阵列层102的表面距离阵列层102上的膜层存在段差，可以实现局部光阻层108的剥离。阵列层102上的黑色有机层107以及光阻层108为保护层109保护，故阵列层102上的剥离液将阵列层102上的光阻层108剥离掉。剥离液从侧面渗透至发光元件103上经过曝光处理的光阻层108，使得发光元件103上的光阻层108、黑色有机层107以及保护层109去除，无光罩实现遮光层的图案化，且由于发光元件103在形成黑色有机层之前设置导电电极1022上，导电电极1022不会为剥离液腐蚀，且不会经过高温烘烤制程，也不会出现导电电极上的铜层氧化等问题。另外，本申请背板单元的制造方法还可以避免阵列基板上用于绑定驱动芯片的金属引脚被腐蚀。\n\n[0056]在本实施例中，剥离液包括单乙醇胺以及二甲基亚砜，二甲基亚砜对曝光后的光阻层起到膨润作用，单乙醇胺起到浸润光阻层与发光元件之间界面以使光阻层脱离并溶解的作用，两者配合以实现光阻层的剥离。且剥离液的选择不会造成腐蚀。\n\n[0057]需要说明的是，发明人经过实验验证，剥离液从侧面渗透剥离光阻层不会对发光元件103造成腐蚀。\n\n[0058]本申请还提供一种背板单元。背板单元可以为背光模组，也可以为显示面板。背板单元为背光模组时，发光元件为亚毫米发光二极管，背光模组作为背光源以提供背光。背板单元为显示面板时，背板单元用于显示，发光元件为微米发光二极管。背板单元包括阵列基板、光阻层以及遮光层。\n\n[0059]具体地，发光元件为亚毫米发光二极管，且背板单元为背光模组。\n\n[0060]阵列基板包括基板、阵列层以及发光元件，阵列层设置于基板上，发光元件设置于阵列层上。阵列层的组成如前所述，此处不作详述。\n\n[0061]光阻层形成于阵列层远离基板的一侧。\n\n[0062]在本实施例中，遮光层包括保护层，保护层包括反射层，通过反射层以对入射至背板单元的光进行反射，避免光入射至薄膜晶体管而影响薄膜晶体管的性能。且当背板单元为显示面板时，反射层能提高反光率/外量子效率提升。\n\n[0063]在本实施例中，遮光层还可以包括设置于保护层和光阻层之间的黑色有机层，以减小发光元件顶部与遮光层之间的段差，便于后续发光元件的封装。\n\n[0064]在本实施例中，反射层包括于黑色有机层远离阵列基板一侧形成的金属层。\n\n[0065]本申请还提供一种显示装置，显示装置包括上述背板单元。\n\n[0066]以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10769, 23823, '技术领域\n\n[0001]本申请涉及显示技术领域，具体而言，涉及一种MiniLED背光结构及显示装置。\n\n背景技术\n\n[0002]LED，全称Light Emitting Diode，由于其色域广，低功耗，稳定等优点被认为是下一代显示技术的有力代表。为了达到显示的目的，LED尺寸必须很小才能达到高分辨率的要求。目前而言，MicroLED由于存在巨量转移困难等问题尚不能大量量产。MiniLED应运而生，将MiniLED作为背光并通过阵列驱动实现动态的区域调光，也称为Local Dimmy技术，从而实现LCD屏的高对比度，极大提升画质。MiniLED背光具有亮度高，低功耗等优点，为了提高LED的光利用率，需要将从LED出射的光以及Panel反射回来的光重新反射到LCD中。目前实现反射的功能主要是贴反射膜在LED基板上，然而反射膜的成本较高，而且无法在面板厂完成，需要委外代工，周转时间长。\n\n[0003]因此，现有技术存在缺陷，急需改进。\n\n发明内容\n\n[0004]本申请实施例的目的在于提供一种MiniLED背光结构及显示装置，利用面板厂常规的化学气相沉积工艺完成反射膜的制作，大大降低了成本和产品生产周期，提高LED出射到面板的光反射率。\n\n[0005]第一方面，本申请实施例提供了一种MiniLED背光结构，包括：\n\n[0006]一阵列基板；\n\n[0007]一分布式布拉格反射镜层，其包括多个第一反射膜层以及多个第二反射膜层交替叠设形成，所述第一反射膜层的折射率大于所述第二反射膜层的折射率；所述分布式布拉格反射镜层开设有多个贯穿至所述阵列基板的安装孔；\n\n[0008]多个LED发光单元，所述多个LED发光单元设置于所述阵列基板上并位于所述安装孔中。\n\n[0009]可选地，在本申请实施例所述的MiniLED背光结构中，所述第一反射膜层的折射率的范围为1.7-2.2。\n\n[0010]可选地，在本申请实施例所述的MiniLED背光结构中，所述第二反射膜层的折射率的范围为1.35-1.55。\n\n[0011]可选地，在本申请实施例所述的MiniLED背光结构中，所述第一反射膜层的材料为SiNx或Al2O3。\n\n[0012]可选地，在本申请实施例所述的MiniLED背光结构中，所述第一反射膜层的折射率为1.96。\n\n[0013]可选地，在本申请实施例所述的MiniLED背光结构中，所述第二反射膜层的材料为SiO2或MgF2。\n\n[0014]可选地，在本申请实施例所述的MiniLED背光结构中，所述第二反射膜层的折射率为1.47。\n\n[0015]可选地，在本申请实施例所述的MiniLED背光结构中，所述第一反射膜层以及所述第二反射膜层的层数相等且均大于9，且与所述阵列基板最近的一层为第一反射膜层。\n\n[0016]可选地，在本申请实施例所述的MiniLED背光结构中，所述第一反射膜层以及所述第二反射膜层的层数均为16，每4层第一反射膜层以及第二反射膜层分别设置红、绿、蓝中心波长干涉增强的膜厚，实现反射白光。\n\n[0017]第二方面，本申请实施例还提供了一种显示装置，包括上述任一所述的MiniLED背光结构。\n\n[0018]由上可知，本申请实施例通过采用分布式布拉格反射镜层，其包括多个第一反射膜层以及多个第二反射膜层交替叠设形成，所述第一反射膜层的折射率大于所述第二反射膜层的折射率，从而可以提高LED出射到基板的光反射率。\n\n附图说明\n\n[0019]为了更清楚地说明本申请实施例的技术方案，下面将对本申请实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本申请的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0020]图1为本申请实施例提供的MiniLED背光结构的制作方法的流程图；\n\n[0021]图2为本申请实施例提供的MiniLED背光结构的结构示意图；\n\n[0022]图3为本申请实施例提供的MiniLED背光结构的另一种结构示意图；\n\n[0023]图4为本申请实施例提供的MiniLED背光结构的分布式布拉格反射镜层的反射率的曲线图。\n\n具体实施方式\n\n[0024]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。\n\n[0025]在本申请的描述中，需要说明的是，术语“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，或者是该申请产品使用时惯常摆放的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”等仅用于区分描述，而不能理解为指示或暗示相对重要性。\n\n[0026]还需要说明的是，除非另有明确的规定和限定，术语“设置”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本申请中的具体含义。\n\n[0027]以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。\n\n[0028]图1为本申请实施例提供的一种MiniLED背光结构的制作方法的流程图。该MiniLED背光结构的制作方包括以下步骤：\n\n[0029]S101、提供一阵列基板。\n\n[0030]S102、在所述阵列基板上设置分布式布拉格反射镜层，其包括多个第一反射膜层以及多个第二反射膜层交替叠设形成，所述第一反射膜层的折射率大于所述第二反射膜层的折射率；所述分布式布拉格反射镜层开设有多个贯穿至所述阵列基板的安装孔。\n\n[0031]S103、在所述阵列基板上设置多个LED发光单元，所述多个LED发光单元位于所述安装孔中，每一所述安装孔对应安装一个所述LED发光单元。\n\n[0032]下面结合附图2，对该方法的各个步骤进行详细说明。\n\n[0033]在该步骤S101中，该阵列基板10与传统的阵列基板类似，可以采用相同的制作方法进行制作，该阵列基板10包括栅极金属层、第一绝缘层、源极\\漏极金属层、第二绝缘层。\n\n[0034]在该步骤S102中，第一反射膜层21以及第二膜层22可由磁控溅射或者化学气相沉积法沉积，本例采用等离子体增强气相沉积法(PECVD)交替沉积第一反射膜层21以及第二膜层22。\n\n[0035]在一些实施例中，第一反射膜层21的折射率的范围为1.7-2.2。第二反射膜层22的折射率的范围为1.35-1.55。该第一反射膜层21的材料为SiNx或Al2O3。优选地，该第一反射膜层21的折射率为1.96。\n\n[0036]在一些实施例中，第二反射膜层22的材料为SiO2或MgF2。第二反射膜层22的折射率为1.47。\n\n[0037]在一些实施例中，该第一反射膜层21以及所述第二反射膜层22的层数相等且均大于9，且与所述阵列基板10最近的一层为第一反射膜层21。\n\n[0038]如图3所示，该第一反射膜层以及所述第二反射膜层的层数均为16，每4层第一反射膜层21以及第二反射膜层22分别设置红、绿、蓝中心波长干涉增强的膜厚，实现反射白光。其中，第一个4周期设置第一反射膜层21的膜厚为50-65nm，优选57nm；第二反射膜层22的膜厚为70-85nm，优选77nm。第二个4周期设置第一反射膜层21的膜厚为60-80nm，优选71nm，第二反射膜层22的膜厚的膜厚为85-105nm，优选94nm。第三个4周期设置第一反射膜层21的膜厚为75-95nm，优选85nm，第二反射膜层22的膜厚为105-120nm，优选102nm；第四个4周期设置第一反射膜层21的膜厚为90-105nm，优选98nm，第二反射膜层22的膜厚为120-140nm，优选130nm。\n\n[0039]本实施例制作出的MiniLED背光结构的分布式布拉格反射镜层的反射率如图4所示，由图可见，在整个可见光范围内反射率较高，接近90％。通过光刻蚀刻制程露出LEDBonding区域，蚀刻可通过干法蚀刻进行，然后将LED发光单元转移至阵列基板，即可完成MiniLED背光结构的制作。\n\n[0040]由上可知，本申请实施例通过采用分布式布拉格反射镜层，其包括多个第一反射膜层以及多个第二反射膜层交替叠设形成，所述第一反射膜层的折射率大于所述第二反射膜层的折射率，从而可以提高LED出射到基板的光反射率。\n\n[0041]请继续参照图2-图3，本申请实施例还提供了一种MiniLED背光结构，包括：一阵列基板10、一分布式布拉格反射镜层20以及多个LED发光单元。\n\n[0042]其中，该阵列基板10与传统的阵列基板类似，可以采用相同的制作方法进行制作，该阵列基板10包括栅极金属层、第一绝缘层、源极\\漏极金属层、第二绝缘层。\n\n[0043]第一反射膜层21以及第二膜层22可由磁控溅射或者化学气相沉积法沉积，本例采用等离子体增强气相沉积法(PECVD)交替沉积第一反射膜层21以及第二膜层22。\n\n[0044]在一些实施例中，第一反射膜层21的折射率的范围为1.7-2.2。第二反射膜层22的折射率的范围为1.35-1.55。该第一反射膜层21的材料为SiNx或Al2O3。优选地，该第一反射膜层21的折射率为1.96。\n\n[0045]在一些实施例中，第二反射膜层22的材料为SiO2或MgF2。第二反射膜层22的折射率为1.47。\n\n[0046]在一些实施例中，该第一反射膜层21以及所述第二反射膜层22的层数相等且均大于9，且与所述阵列基板10最近的一层为第一反射膜层21。\n\n[0047]如图3所示，该第一反射膜层以及所述第二反射膜层的层数均为16，每4层第一反射膜层21以及第二反射膜层22分别设置红、绿、蓝中心波长干涉增强的膜厚，实现反射白光。其中，第一个4周期设置第一反射膜层21的膜厚为50-65nm，优选57nm；第二反射膜层22的膜厚为70-85nm，优选77nm。第二个4周期设置第一反射膜层21的膜厚为60-80nm，优选71nm，第二反射膜层22的膜厚的膜厚为85-105nm，优选94nm。第三个4周期设置第一反射膜层21的膜厚为75-95nm，优选85nm，第二反射膜层22的膜厚为105-120nm，优选102nm；第四个4周期设置第一反射膜层21的膜厚为90-105nm，优选98nm，第二反射膜层22的膜厚为120-140nm，优选130nm。\n\n[0048]本实施例制作出的MiniLED背光结构的分布式布拉格反射镜层的反射率如图4所示，由图可见，在整个可见光范围内反射率较高，接近90％。通过光刻蚀刻制程露出LEDBonding区域，蚀刻可通过干法蚀刻进行，然后将LED发光单元转移至阵列基板，即可完成MiniLED背光结构的制作。\n\n[0049]本申请实施例还提供了一种显示装置，其包括上述任意实施例中的MiniLED背光结构。\n\n[0050]由上可知，本申请实施例通过采用分布式布拉格反射镜层，其包括多个第一反射膜层以及多个第二反射膜层交替叠设形成，所述第一反射膜层的折射率大于所述第二反射膜层的折射率，从而可以提高LED出射到基板的光反射率。\n\n[0051]以上所述仅为本申请的实施例而已，并不用于限制本申请的保护范围，对于本领域的技术人员来说，本申请可以有各种更改和变化。凡在本申请的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本申请的保护范围之内。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体而言，涉及一种MiniLED背光结构及显示装置。\n\n背景技术\n\n[0002]LED，全称Light Emitting Diode，由于其色域广，低功耗，稳定等优点被认为是下一代显示技术的有力代表。为了达到显示的目的，LED尺寸必须很小才能达到高分辨率的要求。目前而言，MicroLED由于存在巨量转移困难等问题尚不能大量量产。MiniLED应运而生，将MiniLED作为背光并通过阵列驱动实现动态的区域调光，也称为Local Dimmy技术，从而实现LCD屏的高对比度，极大提升画质。MiniLED背光具有亮度高，低功耗等优点，为了提高LED的光利用率，需要将从LED出射的光以及Panel反射回来的光重新反射到LCD中。目前实现反射的功能主要是贴反射膜在LED基板上，然而反射膜的成本较高，而且无法在面板厂完成，需要委外代工，周转时间长。\n\n[0003]因此，现有技术存在缺陷，急需改进。\n\n发明内容\n\n[0004]本申请实施例的目的在于提供一种MiniLED背光结构及显示装置，利用面板厂常规的化学气相沉积工艺完成反射膜的制作，大大降低了成本和产品生产周期，提高LED出射到面板的光反射率。\n\n[0005]第一方面，本申请实施例提供了一种MiniLED背光结构，包括：\n\n[0006]一阵列基板；\n\n[0007]一分布式布拉格反射镜层，其包括多个第一反射膜层以及多个第二反射膜层交替叠设形成，所述第一反射膜层的折射率大于所述第二反射膜层的折射率；所述分布式布拉格反射镜层开设有多个贯穿至所述阵列基板的安装孔；\n\n[0008]多个LED发光单元，所述多个LED发光单元设置于所述阵列基板上并位于所述安装孔中。\n\n[0009]可选地，在本申请实施例所述的MiniLED背光结构中，所述第一反射膜层的折射率的范围为1.7-2.2。\n\n[0010]可选地，在本申请实施例所述的MiniLED背光结构中，所述第二反射膜层的折射率的范围为1.35-1.55。\n\n[0011]可选地，在本申请实施例所述的MiniLED背光结构中，所述第一反射膜层的材料为SiNx或Al2O3。\n\n[0012]可选地，在本申请实施例所述的MiniLED背光结构中，所述第一反射膜层的折射率为1.96。\n\n[0013]可选地，在本申请实施例所述的MiniLED背光结构中，所述第二反射膜层的材料为SiO2或MgF2。\n\n[0014]可选地，在本申请实施例所述的MiniLED背光结构中，所述第二反射膜层的折射率为1.47。\n\n[0015]可选地，在本申请实施例所述的MiniLED背光结构中，所述第一反射膜层以及所述第二反射膜层的层数相等且均大于9，且与所述阵列基板最近的一层为第一反射膜层。\n\n[0016]可选地，在本申请实施例所述的MiniLED背光结构中，所述第一反射膜层以及所述第二反射膜层的层数均为16，每4层第一反射膜层以及第二反射膜层分别设置红、绿、蓝中心波长干涉增强的膜厚，实现反射白光。\n\n[0017]第二方面，本申请实施例还提供了一种显示装置，包括上述任一所述的MiniLED背光结构。\n\n[0018]由上可知，本申请实施例通过采用分布式布拉格反射镜层，其包括多个第一反射膜层以及多个第二反射膜层交替叠设形成，所述第一反射膜层的折射率大于所述第二反射膜层的折射率，从而可以提高LED出射到基板的光反射率。\n\n附图说明\n\n[0019]为了更清楚地说明本申请实施例的技术方案，下面将对本申请实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本申请的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0020]图1为本申请实施例提供的MiniLED背光结构的制作方法的流程图；\n\n[0021]图2为本申请实施例提供的MiniLED背光结构的结构示意图；\n\n[0022]图3为本申请实施例提供的MiniLED背光结构的另一种结构示意图；\n\n[0023]图4为本申请实施例提供的MiniLED背光结构的分布式布拉格反射镜层的反射率的曲线图。\n\n具体实施方式\n\n[0024]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。\n\n[0025]在本申请的描述中，需要说明的是，术语“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，或者是该申请产品使用时惯常摆放的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”等仅用于区分描述，而不能理解为指示或暗示相对重要性。\n\n[0026]还需要说明的是，除非另有明确的规定和限定，术语“设置”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本申请中的具体含义。\n\n[0027]以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。\n\n[0028]图1为本申请实施例提供的一种MiniLED背光结构的制作方法的流程图。该MiniLED背光结构的制作方包括以下步骤：\n\n[0029]S101、提供一阵列基板。\n\n[0030]S102、在所述阵列基板上设置分布式布拉格反射镜层，其包括多个第一反射膜层以及多个第二反射膜层交替叠设形成，所述第一反射膜层的折射率大于所述第二反射膜层的折射率；所述分布式布拉格反射镜层开设有多个贯穿至所述阵列基板的安装孔。\n\n[0031]S103、在所述阵列基板上设置多个LED发光单元，所述多个LED发光单元位于所述安装孔中，每一所述安装孔对应安装一个所述LED发光单元。\n\n[0032]下面结合附图2，对该方法的各个步骤进行详细说明。\n\n[0033]在该步骤S101中，该阵列基板10与传统的阵列基板类似，可以采用相同的制作方法进行制作，该阵列基板10包括栅极金属层、第一绝缘层、源极\\漏极金属层、第二绝缘层。\n\n[0034]在该步骤S102中，第一反射膜层21以及第二膜层22可由磁控溅射或者化学气相沉积法沉积，本例采用等离子体增强气相沉积法(PECVD)交替沉积第一反射膜层21以及第二膜层22。\n\n[0035]在一些实施例中，第一反射膜层21的折射率的范围为1.7-2.2。第二反射膜层22的折射率的范围为1.35-1.55。该第一反射膜层21的材料为SiNx或Al2O3。优选地，该第一反射膜层21的折射率为1.96。\n\n[0036]在一些实施例中，第二反射膜层22的材料为SiO2或MgF2。第二反射膜层22的折射率为1.47。\n\n[0037]在一些实施例中，该第一反射膜层21以及所述第二反射膜层22的层数相等且均大于9，且与所述阵列基板10最近的一层为第一反射膜层21。\n\n[0038]如图3所示，该第一反射膜层以及所述第二反射膜层的层数均为16，每4层第一反射膜层21以及第二反射膜层22分别设置红、绿、蓝中心波长干涉增强的膜厚，实现反射白光。其中，第一个4周期设置第一反射膜层21的膜厚为50-65nm，优选57nm；第二反射膜层22的膜厚为70-85nm，优选77nm。第二个4周期设置第一反射膜层21的膜厚为60-80nm，优选71nm，第二反射膜层22的膜厚的膜厚为85-105nm，优选94nm。第三个4周期设置第一反射膜层21的膜厚为75-95nm，优选85nm，第二反射膜层22的膜厚为105-120nm，优选102nm；第四个4周期设置第一反射膜层21的膜厚为90-105nm，优选98nm，第二反射膜层22的膜厚为120-140nm，优选130nm。\n\n[0039]本实施例制作出的MiniLED背光结构的分布式布拉格反射镜层的反射率如图4所示，由图可见，在整个可见光范围内反射率较高，接近90％。通过光刻蚀刻制程露出LEDBonding区域，蚀刻可通过干法蚀刻进行，然后将LED发光单元转移至阵列基板，即可完成MiniLED背光结构的制作。\n\n[0040]由上可知，本申请实施例通过采用分布式布拉格反射镜层，其包括多个第一反射膜层以及多个第二反射膜层交替叠设形成，所述第一反射膜层的折射率大于所述第二反射膜层的折射率，从而可以提高LED出射到基板的光反射率。\n\n[0041]请继续参照图2-图3，本申请实施例还提供了一种MiniLED背光结构，包括：一阵列基板10、一分布式布拉格反射镜层20以及多个LED发光单元。\n\n[0042]其中，该阵列基板10与传统的阵列基板类似，可以采用相同的制作方法进行制作，该阵列基板10包括栅极金属层、第一绝缘层、源极\\漏极金属层、第二绝缘层。\n\n[0043]第一反射膜层21以及第二膜层22可由磁控溅射或者化学气相沉积法沉积，本例采用等离子体增强气相沉积法(PECVD)交替沉积第一反射膜层21以及第二膜层22。\n\n[0044]在一些实施例中，第一反射膜层21的折射率的范围为1.7-2.2。第二反射膜层22的折射率的范围为1.35-1.55。该第一反射膜层21的材料为SiNx或Al2O3。优选地，该第一反射膜层21的折射率为1.96。\n\n[0045]在一些实施例中，第二反射膜层22的材料为SiO2或MgF2。第二反射膜层22的折射率为1.47。\n\n[0046]在一些实施例中，该第一反射膜层21以及所述第二反射膜层22的层数相等且均大于9，且与所述阵列基板10最近的一层为第一反射膜层21。\n\n[0047]如图3所示，该第一反射膜层以及所述第二反射膜层的层数均为16，每4层第一反射膜层21以及第二反射膜层22分别设置红、绿、蓝中心波长干涉增强的膜厚，实现反射白光。其中，第一个4周期设置第一反射膜层21的膜厚为50-65nm，优选57nm；第二反射膜层22的膜厚为70-85nm，优选77nm。第二个4周期设置第一反射膜层21的膜厚为60-80nm，优选71nm，第二反射膜层22的膜厚的膜厚为85-105nm，优选94nm。第三个4周期设置第一反射膜层21的膜厚为75-95nm，优选85nm，第二反射膜层22的膜厚为105-120nm，优选102nm；第四个4周期设置第一反射膜层21的膜厚为90-105nm，优选98nm，第二反射膜层22的膜厚为120-140nm，优选130nm。\n\n[0048]本实施例制作出的MiniLED背光结构的分布式布拉格反射镜层的反射率如图4所示，由图可见，在整个可见光范围内反射率较高，接近90％。通过光刻蚀刻制程露出LEDBonding区域，蚀刻可通过干法蚀刻进行，然后将LED发光单元转移至阵列基板，即可完成MiniLED背光结构的制作。\n\n[0049]本申请实施例还提供了一种显示装置，其包括上述任意实施例中的MiniLED背光结构。\n\n[0050]由上可知，本申请实施例通过采用分布式布拉格反射镜层，其包括多个第一反射膜层以及多个第二反射膜层交替叠设形成，所述第一反射膜层的折射率大于所述第二反射膜层的折射率，从而可以提高LED出射到基板的光反射率。\n\n[0051]以上所述仅为本申请的实施例而已，并不用于限制本申请的保护范围，对于本领域的技术人员来说，本申请可以有各种更改和变化。凡在本申请的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本申请的保护范围之内。');
INSERT INTO `os_patent_instruction_text` VALUES (10770, 23824, '技术领域\n\n[0001]本发明涉及显示面板制造技术领域，尤其涉及一种量子点显示面板及其制备方法。\n\n背景技术\n\n[0002]随着显示技术的蓬勃发展，高色域已经成为一个重要发展方向。高色域意味着显示画面具有更加丰富多彩的色彩，具有更强的色彩展现能力。QD(Quantum Dot，量子点)显示技术属于创新半导体纳米晶体技术，可以准确输送光线，高效提升显示屏的色域值以及视角，让色彩更加纯净鲜艳，使色彩表现更具张力，采用该技术的显示器不仅能产生色域范围更广的动态色彩，还能在画质中展现真实的色板，超越了传统意义上的背光技术。\n\n[0003]随着柔性曲面触控显示技术的快速发展，相关领域技术更新也是日新月异。例如OLED是指利用有机半导体材料和发光材料在电场驱动下，通过载流子注入和复合导致发光的二极管，QD-OLED显示面板结合了OLED电致发光技术以及量子点QD光致发光技术，包括一发射蓝光的OLED阵列基板、一量子点光致转换膜以及一彩色滤光片(Color Filter，简称CF)。QD-OLED显示面板利用蓝光OLED作为光源，激发量子点光致转换膜中红/绿量子点，红色量子点在接收到蓝光之后，会激发出红光通过彩色滤光片透出，绿色量子点在接收到蓝光之后，会激发出绿光通过彩色滤光片透出，蓝光会直接透过彩色滤光片，从而形成全彩显示，因此QD-OLED显示面板具有广色域，广视角等优异的性能，视为大尺寸OLED的潜在技术。\n\n[0004]由于现有技术中光致转换膜制备过程中，需要将量子点粒子制备成墨滴，然后喷墨到相应的像素定义区中，然后采用热或紫外线固化，像素定义区两侧设置遮光能力强的黑色疏水材料，导致底层的量子点粒子固化不完全，与像素定义区的侧面之间存在间隙，影响量子点粒子光致转换膜光的转化效率和亮度，在大视角显示情况下，从各个方向观测到的发光光谱和亮度随观测角度变化而出现较大变化，导致大视角色偏和亮度较差，影响显示品质的技术问题，需要改进。\n\n发明内容\n\n[0005]本发明提供一种量子点显示面板及其制备方法，能够解决现有技术中光致转换膜制备过程中，需要将量子点粒子制备成墨滴，然后喷墨到相应的像素定义区中，然后采用热或紫外线固化，像素定义区两侧设置遮光能力强的黑色疏水材料，导致底层的量子点粒子固化不完全，与像素定义区的侧面之间存在间隙，影响量子点粒子光致转换膜光的转化效率和亮度，在大视角显示情况下，从各个方向观测到的发光光谱和亮度随观测角度变化而出现较大变化，导致大视角色偏和亮度较差，影响显示品质的技术问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]为实现上述目的，本发明提供了一种量子点显示面板，包括：\n\n[0008]彩膜基板，包括衬底基板、以及位于所述衬底基板表面的色阻层，所述色阻层划分有R/G/B色阻，相邻R/G/B色阻之间未设置黑色矩阵。\n\n[0009]像素定义层，设置在所述彩膜基板表面，与所述R/G/B色阻对位设置形成阵列的像素定义区；以及，量子点光致转换膜，形成在所述像素定义区内。\n\n[0010]其中，所述像素定义层包括垫高层、以及覆盖在所述垫高层上的遮光层，所述垫高层与所述遮光层的叠加层位于相邻的所述R/G/B色阻之间。\n\n[0011]根据本发明一优选实施例，所述量子点显示面板还包括阵列基板，以及位于所述阵列基板上的蓝光显示器件，所述彩膜基板与所述阵列基板对组设置，所述蓝光显示器件与所述量子点光致转换膜相对设置。\n\n[0012]根据本发明一优选实施例，所述蓝光显示器件为OLED显示器件或Mini-LED显示器件。\n\n[0013]根据本发明一优选实施例，所述量子点显示面板为顶发射型结构，所述彩膜基板、所述量子点光致转换膜、所述蓝光显示器件、以及所述阵列基板沿出光方向依次设置。\n\n[0014]根据本发明一优选实施例，所述垫高层为SiN/SiO薄膜或者有机薄膜，所述遮光层为黑色矩阵，所述垫高层与所述遮光层的叠加层的厚度大于或等于6um。\n\n[0015]根据本发明一优选实施例，所述像素定义区的截面为等腰梯形，所述量子点光致转换膜贴合于所述等腰梯形的两侧设置。\n\n[0016]根据本发明一优选实施例，在所述量子点显示面板上每一R/G/B色阻与其对应的所述发光层共同定义出一子像素，所述色阻层为B色阻，所述B色阻对应的量子点光致转换膜不设置量子点粒子。\n\n[0017]根据本发明一优选实施例，所述彩膜基板与所述像素定义层之间设置有机保护层，所述有机保护层的材料为透明有机薄膜或者光学透明胶。\n\n[0018]依据上述量子点显示面板，本发明还提供一种量子点显示面板的制备方法，包括：\n\n[0019]步骤1，提供衬底基板，在所述衬底基板上制备色阻层，完成彩膜基板的制备；\n\n[0020]步骤2，在所述彩膜基板上制备像素定义层，所述像素定义层间隔设置以形成像素定义区，通过喷墨打印技术将量子点粒子以墨滴方式打印到所述像素定义区中，然后采用紫外线进行固化，完成量子点光致转换膜的制备；\n\n[0021]步骤3，将量子点光致转换膜贴合于相应蓝光显示器件以及阵列基板表面。\n\n[0022]根据本发明一优选实施例，在所述彩膜基板上制备像素定义层，所述像素定义层间隔设置以形成像素定义区，通过喷墨打印技术将量子点粒子以墨滴方式打印到所述像素定义区中，然后采用紫外线进行固化，完成量子点光致转换膜的制备的具体步骤2包括：\n\n[0023]在所述彩膜基板表面设置垫高层、以及覆盖在所述垫高层上的遮光层，所述垫高层与所述遮光层叠加以形成像素定义层，且所述像素定义层的厚度大于或等于6um。\n\n[0024]本发明的有益效果：本申请提供一种量子点显示面板及其制备方法，本申请中量子点显示面板包括彩膜基板、位于彩膜基板表面的像素定义层、位于像素定义层的像素定义区中的量子点光致转换膜、以及位于量子点光致转换膜下方的蓝光显示器件，由于所述像素定义层设置了垫高层和遮光层，确保了像素定义层的厚度大于或等于6um，有利于量子点光致转换膜中量子点均匀固化，无缝隙地贴合于像素定义层侧面，同时避免量子点显示面板产生混光和漏光现象，从蓝光显示器件中出射蓝色光源，激发量子点光致转换膜，发出纯净光，纯净光透过色阻变成相应的色彩，从而实现出射光更柔和、更均匀、亮度更高，提高了显示器件色域和视角，从而提升量子点显示面板显示品质。\n\n附图说明\n\n[0025]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0026]图1为本申请提供一种量子点显示面板结构示意图；\n\n[0027]图2为本申请提供一种量子点OLED显示面板结构示意图；\n\n[0028]图3为本申请提供一种量子点显示面板的制备流程示意图；\n\n[0029]图4至图9为本申请提供一种量子点显示面板的制备结构示意图。\n\n具体实施方式\n\n[0030]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示，图中虚线表示在结构中并不存在的，仅仅说明结构的形状和位置。\n\n[0031]本发明针对现有技术中光致转换膜制备过程中，需要将量子点粒子制备成墨滴，然后喷墨到相应的像素定义区中，然后采用热或紫外线固化，像素定义区两侧设置遮光能力强的黑色疏水材料，导致底层的量子点粒子固化不完全，与像素定义区的侧面之间存在间隙，影响量子点粒子光致转换膜光的转化效率和亮度，在大视角显示情况下，从各个方向观测到的发光光谱和亮度随观测角度变化而出现较大变化，导致大视角色偏和亮度较差，影响显示品质的技术问题，本实施例能够解决该缺陷。\n\n[0032]如图1所示，本申请提供一种量子点显示面板100，该量子点显示面板100包括：彩膜基板101，包括衬底基板1011、以及位于衬底基板1011表面的色阻层，色阻层划分有R/G/B色阻，例如色阻层包括一红色子色阻1012、一绿色子色阻1013、一蓝色子色阻1014，任意相邻两个子色阻之间未设置黑色矩阵，彩膜基板在色阻层远离第一基板1011还设置有有机保护层1015，有机保护层1015的材料为透明有机薄膜或者光学透明胶；像素定义层102，设置在彩膜基板表面101表面，与R/G/B色阻对位设置形成阵列的像素定义区，像素定义区的截面优选为等腰梯形，像素定义层102包括垫高层1021、以及覆盖在垫高层1021上的遮光层1022，垫高层1021与遮光层1022的叠加层位于相邻的R/G/B色阻之间；以及量子点光致转换膜103，形成在像素定义区内，例如量子点光致转换膜103包括第一量子点光致转换膜1031、第二量子点光致转换膜1032、以及第三量子点光致转换膜1033，第一量子点光致转换膜1031、第二量子点光致转换膜1032、以及第一量子点光致转换膜1033均设置在像素定义区中，贴合于像素定义层102的两侧设置，第三量子点光致转换膜1033与蓝色子色阻1015对位设置，第三量子点光致转换膜1033空出，不设置量子点粒子。\n\n[0033]该量子点显示面板100还包括阵列基板105，以及位于阵列基板105上的蓝光显示器件104，彩膜基板101与阵列基板105对组设置，蓝光显示器件104与量子点光致转换膜103相对设置。蓝光显示器件104优选为OLED显示器件或Mini-LED显示器件，蓝光显示器件104出射光线1040，量子点显示面板100优选为顶发射型结构，彩膜基板101、量子点光致转换膜103、蓝光显示器件104、以及阵列基板105沿出光方向依次设置。在量子点OLED显示面板100上，每一R/G/B色阻与其对应的蓝光显示器件中发光层共同定义出一子像素，同一子像素对应的彩膜基板频谱、量子点光致转换膜发光光谱以及发光层光谱基本重合。从蓝光显示器件104中出射蓝色光源，激发量子点光致转换膜103，发出纯净光，纯净光透过色阻变成相应的色彩，从而实现出射光更柔和、更均匀、亮度更高，提高了显示器件色域和视角，从而提升量子点显示面板显示品质。\n\n[0034]具体地，本实施例中像素定义层102间隔设置以形成多个像素定义区，像素定义区填充有量子点粒子以形成量子点光致转换膜103，且像素定义区与色阻层1017中R/G/B色阻对位设置；若像素定义层102采用一层设置，且像素定义层102全部采用黑色遮光疏水性材料，像素定义层102无法达到6um，当量子点粒子以墨滴的形式滴入到像素定义区中，采用热或紫外线固化，像素定义区底层的量子点粒子的固化速度和表面的量子点粒子固化速度不一样，导致底层的量子点粒子与像素定义区底部或侧部存在间隙，影响量子点光致转换膜的转化效率和亮度，因此本实施例中将像素定义层102制备成两层，包括垫高层1021、以及覆盖在垫高层1021上的遮光层1022，且遮光层1022和垫高层1021图案化的形状相同，且遮光层1022覆盖垫高层1021，避免量子点光致转换膜102漏光情况，便于垫高层1021与遮光层1022的叠加层的厚度大于或等于6um，垫高层1021为SiN/SiO薄膜或者有机薄膜，遮光层1022为黑色矩阵，有利于像素定义区中底部或表面的量子点粒子1021均匀固化，无缝隙地贴合于像素定义层侧面，同时避免量子点显示面板100产生混光和漏光现象。\n\n[0035]如图2所示，本实施例中量子点显示面板100包括彩膜基板101、位于彩膜基板101表面的像素定义层102、位于像素定义层的像素定义区中量子点光致转换膜103、位于量子点光致转换膜103下方的蓝光显示器件104、以及位于蓝光显示器件104下的阵列基板105，蓝光显示器件104为OLED显示器件或Mini-LED显示器件，阵列基板105为TFT薄膜晶体管基板，该阵列基板105包括第二基板1051、设置于第二基板表面的TFT层、第二基板1051优选为玻璃基板或透明塑料基板，TFT层位于第二基板1051表面，包括设于第二基板1051上的第二遮光层1052、设于第二基板1051上且覆盖第二遮光层1052的缓冲层1053、设于缓冲层1053上的有源层1054、设于有源层1054上的栅绝缘层1055、设于栅绝缘层1055上的栅极1056、设于缓冲层1053上且覆盖有源层1054、栅绝缘层1055以及栅极1056的层间绝缘层1057，设于层间绝缘层1057上源极10581和漏极10582，设于层间绝缘层1057上且覆盖源极10581和漏极10582的钝化层10591，设于第二层间绝缘层1094钝化层10591上的平坦化层10592。其中，有源层1054包括对应于栅绝1056下方的沟道区以及分别位于沟道区两侧的源极接触区与漏极接触区，源极接触区与漏极接触区为导体化的金属氧化物半导体材料，沟道区的材料为保持半导体特性的金属氧化物半导体材料。在层间绝缘层1057上设有分别对应于源极接触区与漏极接触区上方的源极接触孔与漏极接触孔，源极10581与漏极10582分别通过源极接触孔与漏极接触孔和有源层1054的源极接触区与漏极接触区电性连接，第二遮光层1052在第二基板1051上的正投影覆盖有源层1052在第二基板1051上的正投影，从而使第二遮光层1052能够对有源层1054进行完全遮盖，防止有源层1054受到光线照射，避免了TFT层的阈值电压产生负漂。\n\n[0036]蓝光显示器件104位于TFT层上，包括阳极层1041，位于阳极层1041上方的第二像素定义层1042、位于第二像素定义层1042表面的发光层1043、以及位于发光层1043表面的阴极层1044，设置于阴极层1044远离TFT层一侧的封装层1045，量子点光致转换膜103贴合于封装层1045设置。像素定义层1042分离设置形成像素开口，发光层1043对于像素开口的部分平铺在阳极层202上，阴极层1044对于像素开口的部分平铺在发光层1043上，阳极1041通过阳极过孔与TFT层中漏极10582电性接触，该TFT层的源极10581与外接电源的正极相连，阴极层1044通过电源走线层与外接电源的负极电性连接，当阳极1041与阴极层1044之间设置为2V至10V的直流电压时，阳极1041产生空穴，阴极层1044产生电子，在发光层1043相遇，电子和空穴分别带负电和正电，它们相互吸引，激发发光层1043中有机材料发光，以实现量子点OLED显示面板的正常工作。通过阳极1041与阴极层1044之间电压的大小，可调整发光层1043发光亮度，电压越大，亮度越高，反之越暗。依其不同的配方，可产生红、绿、蓝(R、G、B)三基色，构成基本色彩。本实施例发光层1043优选发出蓝光，蓝光更容易激发量子点光致转换膜102中量子点转化光的效率和亮度。\n\n[0037]在另一实施例中，蓝光显示器件104为液晶显示装置，在量子点光致转换膜下方设置相应的液晶显示面板和相应的背光模组。\n\n[0038]依据上述量子点显示面板，如图3所示，本申请还提供一种量子点显示面板的制备方法，包括：\n\n[0039]步骤1，提供衬底基板，在所述衬底基板上制备色阻层，完成彩膜基板的制备；\n\n[0040]步骤2，在所述彩膜基板上制备像素定义层，所述像素定义层间隔设置以形成像素定义区，通过喷墨打印技术将量子点粒子以墨滴方式打印到所述像素定义区中，然后采用紫外线进行固化，完成量子点光致转换膜的制备；\n\n[0041]步骤3，将量子点光致转换膜贴合于相应蓝光显示器件以及阵列基板表面。\n\n[0042]优选地，在所述彩膜基板上制备像素定义层，所述像素定义层间隔设置以形成像素定义区，通过喷墨打印技术将量子点粒子以墨滴方式打印到所述像素定义区中，然后采用紫外线进行固化，完成量子点光致转换膜的制备的具体步骤2包括：\n\n[0043]在所述彩膜基板表面设置垫高层、以及覆盖在所述垫高层上的遮光层，所述垫高层与所述遮光层叠加以形成像素定义层，且所述像素定义层的厚度大于或等于6um。\n\n[0044]具体地，如图4至图9所示，步骤1，如图4所示，提供衬底基板1011，在衬底基板1011上制备色阻层，色阻层划分有R/G/B色阻，任意相邻两个R/G/B色阻之间未设置有黑色矩阵，色阻层包括一红色子色阻1012、一绿色子色阻1013、一蓝色子色阻1014在色组层表面制备有机保护层1015，该有机保护层1015优选为有机透明薄膜或者光学透明胶层，完成彩色滤光片101的制备；步骤2，如图5和图6所示，在彩膜基板101上制备垫高层1021以及覆盖垫高层1021的遮光层1022，垫高层1021和遮光层1022叠层以形成像素定义层102，像素定义层102优选为等腰梯形，像素定义层102分离设置以形成像素定义区10212，像素定义层102具体地制备方法如下，在有机保护层1015上涂布一层SiN/SiO薄膜或者有机层，通过光罩对SiN/SiO薄膜或者有机层进行图案化处理，形成垫高层1021，在有机保护层1015上涂布光阻层，通过光罩对光阻层进行图案化处理，形成凹槽，且凹槽位于垫高层1021表面，在凹槽沉积一层黑色矩阵材料，形成遮光层1022；或者，在有机保护层1015上涂布一层SiN/SiO薄膜或者有机层，通过光罩对SiN/SiO薄膜或者有机层进行图案化处理，形成垫高层1021，在有机保护层1015上沉积一层黑色矩阵材料，通过光罩对黑色矩阵材料进行图案化处理，形成遮光层1022，且遮光层1022覆盖垫高层1021，其中，垫高层1021和遮光层1022的厚度之和大于或等于6um；如图7和图8所示，通过喷墨打印技术将量子点粒子以墨滴方式打印到不同像素定义区10212中，形成有第一量子点光致转换膜1031、第二量子点光致转换膜1032、以及第三量子点光致转换膜1033，第一量子点光致转换膜1031与红色子色阻1012对位设置，第二量子点光致转换膜1032与绿色子色阻1013对位设置，第三量子点光致转换膜1033与蓝色子色阻1015对位设置，第三量子点光致转换膜1033空出，不设置量子点粒子，采用紫外线进行固化，第一量子点光致转换膜1031、第二量子点光致转换膜1032、以及第三量子点光致转换膜1033收缩，边界与像素定义层102无缝隙贴合，完成量子点光致转换膜103的制备；步骤3，如图9所示，将量子点光致转换膜103贴合于相应蓝光显示器件104、以及相应阵列基板105。\n\n[0045]本申请提供一种量子点显示面板及其制备方法，本申请中量子点显示面板包括彩膜基板、位于彩膜基板表面的像素定义层、位于像素定义层的像素定义区中的量子点光致转换膜、以及位于量子点光致转换膜下方的蓝光显示器件，由于所述像素定义层设置了垫高层和遮光层，确保了像素定义层的厚度大于或等于6um，有利于量子点光致转换膜中量子点均匀固化，无缝隙地贴合于像素定义层侧面，同时避免量子点显示面板产生混光和漏光现象，从蓝光显示器件中出射蓝色光源，激发量子点光致转换膜，发出纯净光，纯净光透过色阻变成相应的色彩，从而实现出射光更柔和、更均匀、亮度更高，提高了显示器件色域和视角，从而提升量子点显示面板显示品质。\n\n[0046]综上，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及显示面板制造技术领域，尤其涉及一种量子点显示面板及其制备方法。\n\n背景技术\n\n[0002]随着显示技术的蓬勃发展，高色域已经成为一个重要发展方向。高色域意味着显示画面具有更加丰富多彩的色彩，具有更强的色彩展现能力。QD(Quantum Dot，量子点)显示技术属于创新半导体纳米晶体技术，可以准确输送光线，高效提升显示屏的色域值以及视角，让色彩更加纯净鲜艳，使色彩表现更具张力，采用该技术的显示器不仅能产生色域范围更广的动态色彩，还能在画质中展现真实的色板，超越了传统意义上的背光技术。\n\n[0003]随着柔性曲面触控显示技术的快速发展，相关领域技术更新也是日新月异。例如OLED是指利用有机半导体材料和发光材料在电场驱动下，通过载流子注入和复合导致发光的二极管，QD-OLED显示面板结合了OLED电致发光技术以及量子点QD光致发光技术，包括一发射蓝光的OLED阵列基板、一量子点光致转换膜以及一彩色滤光片(Color Filter，简称CF)。QD-OLED显示面板利用蓝光OLED作为光源，激发量子点光致转换膜中红/绿量子点，红色量子点在接收到蓝光之后，会激发出红光通过彩色滤光片透出，绿色量子点在接收到蓝光之后，会激发出绿光通过彩色滤光片透出，蓝光会直接透过彩色滤光片，从而形成全彩显示，因此QD-OLED显示面板具有广色域，广视角等优异的性能，视为大尺寸OLED的潜在技术。\n\n[0004]由于现有技术中光致转换膜制备过程中，需要将量子点粒子制备成墨滴，然后喷墨到相应的像素定义区中，然后采用热或紫外线固化，像素定义区两侧设置遮光能力强的黑色疏水材料，导致底层的量子点粒子固化不完全，与像素定义区的侧面之间存在间隙，影响量子点粒子光致转换膜光的转化效率和亮度，在大视角显示情况下，从各个方向观测到的发光光谱和亮度随观测角度变化而出现较大变化，导致大视角色偏和亮度较差，影响显示品质的技术问题，需要改进。\n\n发明内容\n\n[0005]本发明提供一种量子点显示面板及其制备方法，能够解决现有技术中光致转换膜制备过程中，需要将量子点粒子制备成墨滴，然后喷墨到相应的像素定义区中，然后采用热或紫外线固化，像素定义区两侧设置遮光能力强的黑色疏水材料，导致底层的量子点粒子固化不完全，与像素定义区的侧面之间存在间隙，影响量子点粒子光致转换膜光的转化效率和亮度，在大视角显示情况下，从各个方向观测到的发光光谱和亮度随观测角度变化而出现较大变化，导致大视角色偏和亮度较差，影响显示品质的技术问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]为实现上述目的，本发明提供了一种量子点显示面板，包括：\n\n[0008]彩膜基板，包括衬底基板、以及位于所述衬底基板表面的色阻层，所述色阻层划分有R/G/B色阻，相邻R/G/B色阻之间未设置黑色矩阵。\n\n[0009]像素定义层，设置在所述彩膜基板表面，与所述R/G/B色阻对位设置形成阵列的像素定义区；以及，量子点光致转换膜，形成在所述像素定义区内。\n\n[0010]其中，所述像素定义层包括垫高层、以及覆盖在所述垫高层上的遮光层，所述垫高层与所述遮光层的叠加层位于相邻的所述R/G/B色阻之间。\n\n[0011]根据本发明一优选实施例，所述量子点显示面板还包括阵列基板，以及位于所述阵列基板上的蓝光显示器件，所述彩膜基板与所述阵列基板对组设置，所述蓝光显示器件与所述量子点光致转换膜相对设置。\n\n[0012]根据本发明一优选实施例，所述蓝光显示器件为OLED显示器件或Mini-LED显示器件。\n\n[0013]根据本发明一优选实施例，所述量子点显示面板为顶发射型结构，所述彩膜基板、所述量子点光致转换膜、所述蓝光显示器件、以及所述阵列基板沿出光方向依次设置。\n\n[0014]根据本发明一优选实施例，所述垫高层为SiN/SiO薄膜或者有机薄膜，所述遮光层为黑色矩阵，所述垫高层与所述遮光层的叠加层的厚度大于或等于6um。\n\n[0015]根据本发明一优选实施例，所述像素定义区的截面为等腰梯形，所述量子点光致转换膜贴合于所述等腰梯形的两侧设置。\n\n[0016]根据本发明一优选实施例，在所述量子点显示面板上每一R/G/B色阻与其对应的所述发光层共同定义出一子像素，所述色阻层为B色阻，所述B色阻对应的量子点光致转换膜不设置量子点粒子。\n\n[0017]根据本发明一优选实施例，所述彩膜基板与所述像素定义层之间设置有机保护层，所述有机保护层的材料为透明有机薄膜或者光学透明胶。\n\n[0018]依据上述量子点显示面板，本发明还提供一种量子点显示面板的制备方法，包括：\n\n[0019]步骤1，提供衬底基板，在所述衬底基板上制备色阻层，完成彩膜基板的制备；\n\n[0020]步骤2，在所述彩膜基板上制备像素定义层，所述像素定义层间隔设置以形成像素定义区，通过喷墨打印技术将量子点粒子以墨滴方式打印到所述像素定义区中，然后采用紫外线进行固化，完成量子点光致转换膜的制备；\n\n[0021]步骤3，将量子点光致转换膜贴合于相应蓝光显示器件以及阵列基板表面。\n\n[0022]根据本发明一优选实施例，在所述彩膜基板上制备像素定义层，所述像素定义层间隔设置以形成像素定义区，通过喷墨打印技术将量子点粒子以墨滴方式打印到所述像素定义区中，然后采用紫外线进行固化，完成量子点光致转换膜的制备的具体步骤2包括：\n\n[0023]在所述彩膜基板表面设置垫高层、以及覆盖在所述垫高层上的遮光层，所述垫高层与所述遮光层叠加以形成像素定义层，且所述像素定义层的厚度大于或等于6um。\n\n[0024]本发明的有益效果：本申请提供一种量子点显示面板及其制备方法，本申请中量子点显示面板包括彩膜基板、位于彩膜基板表面的像素定义层、位于像素定义层的像素定义区中的量子点光致转换膜、以及位于量子点光致转换膜下方的蓝光显示器件，由于所述像素定义层设置了垫高层和遮光层，确保了像素定义层的厚度大于或等于6um，有利于量子点光致转换膜中量子点均匀固化，无缝隙地贴合于像素定义层侧面，同时避免量子点显示面板产生混光和漏光现象，从蓝光显示器件中出射蓝色光源，激发量子点光致转换膜，发出纯净光，纯净光透过色阻变成相应的色彩，从而实现出射光更柔和、更均匀、亮度更高，提高了显示器件色域和视角，从而提升量子点显示面板显示品质。\n\n附图说明\n\n[0025]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0026]图1为本申请提供一种量子点显示面板结构示意图；\n\n[0027]图2为本申请提供一种量子点OLED显示面板结构示意图；\n\n[0028]图3为本申请提供一种量子点显示面板的制备流程示意图；\n\n[0029]图4至图9为本申请提供一种量子点显示面板的制备结构示意图。\n\n具体实施方式\n\n[0030]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示，图中虚线表示在结构中并不存在的，仅仅说明结构的形状和位置。\n\n[0031]本发明针对现有技术中光致转换膜制备过程中，需要将量子点粒子制备成墨滴，然后喷墨到相应的像素定义区中，然后采用热或紫外线固化，像素定义区两侧设置遮光能力强的黑色疏水材料，导致底层的量子点粒子固化不完全，与像素定义区的侧面之间存在间隙，影响量子点粒子光致转换膜光的转化效率和亮度，在大视角显示情况下，从各个方向观测到的发光光谱和亮度随观测角度变化而出现较大变化，导致大视角色偏和亮度较差，影响显示品质的技术问题，本实施例能够解决该缺陷。\n\n[0032]如图1所示，本申请提供一种量子点显示面板100，该量子点显示面板100包括：彩膜基板101，包括衬底基板1011、以及位于衬底基板1011表面的色阻层，色阻层划分有R/G/B色阻，例如色阻层包括一红色子色阻1012、一绿色子色阻1013、一蓝色子色阻1014，任意相邻两个子色阻之间未设置黑色矩阵，彩膜基板在色阻层远离第一基板1011还设置有有机保护层1015，有机保护层1015的材料为透明有机薄膜或者光学透明胶；像素定义层102，设置在彩膜基板表面101表面，与R/G/B色阻对位设置形成阵列的像素定义区，像素定义区的截面优选为等腰梯形，像素定义层102包括垫高层1021、以及覆盖在垫高层1021上的遮光层1022，垫高层1021与遮光层1022的叠加层位于相邻的R/G/B色阻之间；以及量子点光致转换膜103，形成在像素定义区内，例如量子点光致转换膜103包括第一量子点光致转换膜1031、第二量子点光致转换膜1032、以及第三量子点光致转换膜1033，第一量子点光致转换膜1031、第二量子点光致转换膜1032、以及第一量子点光致转换膜1033均设置在像素定义区中，贴合于像素定义层102的两侧设置，第三量子点光致转换膜1033与蓝色子色阻1015对位设置，第三量子点光致转换膜1033空出，不设置量子点粒子。\n\n[0033]该量子点显示面板100还包括阵列基板105，以及位于阵列基板105上的蓝光显示器件104，彩膜基板101与阵列基板105对组设置，蓝光显示器件104与量子点光致转换膜103相对设置。蓝光显示器件104优选为OLED显示器件或Mini-LED显示器件，蓝光显示器件104出射光线1040，量子点显示面板100优选为顶发射型结构，彩膜基板101、量子点光致转换膜103、蓝光显示器件104、以及阵列基板105沿出光方向依次设置。在量子点OLED显示面板100上，每一R/G/B色阻与其对应的蓝光显示器件中发光层共同定义出一子像素，同一子像素对应的彩膜基板频谱、量子点光致转换膜发光光谱以及发光层光谱基本重合。从蓝光显示器件104中出射蓝色光源，激发量子点光致转换膜103，发出纯净光，纯净光透过色阻变成相应的色彩，从而实现出射光更柔和、更均匀、亮度更高，提高了显示器件色域和视角，从而提升量子点显示面板显示品质。\n\n[0034]具体地，本实施例中像素定义层102间隔设置以形成多个像素定义区，像素定义区填充有量子点粒子以形成量子点光致转换膜103，且像素定义区与色阻层1017中R/G/B色阻对位设置；若像素定义层102采用一层设置，且像素定义层102全部采用黑色遮光疏水性材料，像素定义层102无法达到6um，当量子点粒子以墨滴的形式滴入到像素定义区中，采用热或紫外线固化，像素定义区底层的量子点粒子的固化速度和表面的量子点粒子固化速度不一样，导致底层的量子点粒子与像素定义区底部或侧部存在间隙，影响量子点光致转换膜的转化效率和亮度，因此本实施例中将像素定义层102制备成两层，包括垫高层1021、以及覆盖在垫高层1021上的遮光层1022，且遮光层1022和垫高层1021图案化的形状相同，且遮光层1022覆盖垫高层1021，避免量子点光致转换膜102漏光情况，便于垫高层1021与遮光层1022的叠加层的厚度大于或等于6um，垫高层1021为SiN/SiO薄膜或者有机薄膜，遮光层1022为黑色矩阵，有利于像素定义区中底部或表面的量子点粒子1021均匀固化，无缝隙地贴合于像素定义层侧面，同时避免量子点显示面板100产生混光和漏光现象。\n\n[0035]如图2所示，本实施例中量子点显示面板100包括彩膜基板101、位于彩膜基板101表面的像素定义层102、位于像素定义层的像素定义区中量子点光致转换膜103、位于量子点光致转换膜103下方的蓝光显示器件104、以及位于蓝光显示器件104下的阵列基板105，蓝光显示器件104为OLED显示器件或Mini-LED显示器件，阵列基板105为TFT薄膜晶体管基板，该阵列基板105包括第二基板1051、设置于第二基板表面的TFT层、第二基板1051优选为玻璃基板或透明塑料基板，TFT层位于第二基板1051表面，包括设于第二基板1051上的第二遮光层1052、设于第二基板1051上且覆盖第二遮光层1052的缓冲层1053、设于缓冲层1053上的有源层1054、设于有源层1054上的栅绝缘层1055、设于栅绝缘层1055上的栅极1056、设于缓冲层1053上且覆盖有源层1054、栅绝缘层1055以及栅极1056的层间绝缘层1057，设于层间绝缘层1057上源极10581和漏极10582，设于层间绝缘层1057上且覆盖源极10581和漏极10582的钝化层10591，设于第二层间绝缘层1094钝化层10591上的平坦化层10592。其中，有源层1054包括对应于栅绝1056下方的沟道区以及分别位于沟道区两侧的源极接触区与漏极接触区，源极接触区与漏极接触区为导体化的金属氧化物半导体材料，沟道区的材料为保持半导体特性的金属氧化物半导体材料。在层间绝缘层1057上设有分别对应于源极接触区与漏极接触区上方的源极接触孔与漏极接触孔，源极10581与漏极10582分别通过源极接触孔与漏极接触孔和有源层1054的源极接触区与漏极接触区电性连接，第二遮光层1052在第二基板1051上的正投影覆盖有源层1052在第二基板1051上的正投影，从而使第二遮光层1052能够对有源层1054进行完全遮盖，防止有源层1054受到光线照射，避免了TFT层的阈值电压产生负漂。\n\n[0036]蓝光显示器件104位于TFT层上，包括阳极层1041，位于阳极层1041上方的第二像素定义层1042、位于第二像素定义层1042表面的发光层1043、以及位于发光层1043表面的阴极层1044，设置于阴极层1044远离TFT层一侧的封装层1045，量子点光致转换膜103贴合于封装层1045设置。像素定义层1042分离设置形成像素开口，发光层1043对于像素开口的部分平铺在阳极层202上，阴极层1044对于像素开口的部分平铺在发光层1043上，阳极1041通过阳极过孔与TFT层中漏极10582电性接触，该TFT层的源极10581与外接电源的正极相连，阴极层1044通过电源走线层与外接电源的负极电性连接，当阳极1041与阴极层1044之间设置为2V至10V的直流电压时，阳极1041产生空穴，阴极层1044产生电子，在发光层1043相遇，电子和空穴分别带负电和正电，它们相互吸引，激发发光层1043中有机材料发光，以实现量子点OLED显示面板的正常工作。通过阳极1041与阴极层1044之间电压的大小，可调整发光层1043发光亮度，电压越大，亮度越高，反之越暗。依其不同的配方，可产生红、绿、蓝(R、G、B)三基色，构成基本色彩。本实施例发光层1043优选发出蓝光，蓝光更容易激发量子点光致转换膜102中量子点转化光的效率和亮度。\n\n[0037]在另一实施例中，蓝光显示器件104为液晶显示装置，在量子点光致转换膜下方设置相应的液晶显示面板和相应的背光模组。\n\n[0038]依据上述量子点显示面板，如图3所示，本申请还提供一种量子点显示面板的制备方法，包括：\n\n[0039]步骤1，提供衬底基板，在所述衬底基板上制备色阻层，完成彩膜基板的制备；\n\n[0040]步骤2，在所述彩膜基板上制备像素定义层，所述像素定义层间隔设置以形成像素定义区，通过喷墨打印技术将量子点粒子以墨滴方式打印到所述像素定义区中，然后采用紫外线进行固化，完成量子点光致转换膜的制备；\n\n[0041]步骤3，将量子点光致转换膜贴合于相应蓝光显示器件以及阵列基板表面。\n\n[0042]优选地，在所述彩膜基板上制备像素定义层，所述像素定义层间隔设置以形成像素定义区，通过喷墨打印技术将量子点粒子以墨滴方式打印到所述像素定义区中，然后采用紫外线进行固化，完成量子点光致转换膜的制备的具体步骤2包括：\n\n[0043]在所述彩膜基板表面设置垫高层、以及覆盖在所述垫高层上的遮光层，所述垫高层与所述遮光层叠加以形成像素定义层，且所述像素定义层的厚度大于或等于6um。\n\n[0044]具体地，如图4至图9所示，步骤1，如图4所示，提供衬底基板1011，在衬底基板1011上制备色阻层，色阻层划分有R/G/B色阻，任意相邻两个R/G/B色阻之间未设置有黑色矩阵，色阻层包括一红色子色阻1012、一绿色子色阻1013、一蓝色子色阻1014在色组层表面制备有机保护层1015，该有机保护层1015优选为有机透明薄膜或者光学透明胶层，完成彩色滤光片101的制备；步骤2，如图5和图6所示，在彩膜基板101上制备垫高层1021以及覆盖垫高层1021的遮光层1022，垫高层1021和遮光层1022叠层以形成像素定义层102，像素定义层102优选为等腰梯形，像素定义层102分离设置以形成像素定义区10212，像素定义层102具体地制备方法如下，在有机保护层1015上涂布一层SiN/SiO薄膜或者有机层，通过光罩对SiN/SiO薄膜或者有机层进行图案化处理，形成垫高层1021，在有机保护层1015上涂布光阻层，通过光罩对光阻层进行图案化处理，形成凹槽，且凹槽位于垫高层1021表面，在凹槽沉积一层黑色矩阵材料，形成遮光层1022；或者，在有机保护层1015上涂布一层SiN/SiO薄膜或者有机层，通过光罩对SiN/SiO薄膜或者有机层进行图案化处理，形成垫高层1021，在有机保护层1015上沉积一层黑色矩阵材料，通过光罩对黑色矩阵材料进行图案化处理，形成遮光层1022，且遮光层1022覆盖垫高层1021，其中，垫高层1021和遮光层1022的厚度之和大于或等于6um；如图7和图8所示，通过喷墨打印技术将量子点粒子以墨滴方式打印到不同像素定义区10212中，形成有第一量子点光致转换膜1031、第二量子点光致转换膜1032、以及第三量子点光致转换膜1033，第一量子点光致转换膜1031与红色子色阻1012对位设置，第二量子点光致转换膜1032与绿色子色阻1013对位设置，第三量子点光致转换膜1033与蓝色子色阻1015对位设置，第三量子点光致转换膜1033空出，不设置量子点粒子，采用紫外线进行固化，第一量子点光致转换膜1031、第二量子点光致转换膜1032、以及第三量子点光致转换膜1033收缩，边界与像素定义层102无缝隙贴合，完成量子点光致转换膜103的制备；步骤3，如图9所示，将量子点光致转换膜103贴合于相应蓝光显示器件104、以及相应阵列基板105。\n\n[0045]本申请提供一种量子点显示面板及其制备方法，本申请中量子点显示面板包括彩膜基板、位于彩膜基板表面的像素定义层、位于像素定义层的像素定义区中的量子点光致转换膜、以及位于量子点光致转换膜下方的蓝光显示器件，由于所述像素定义层设置了垫高层和遮光层，确保了像素定义层的厚度大于或等于6um，有利于量子点光致转换膜中量子点均匀固化，无缝隙地贴合于像素定义层侧面，同时避免量子点显示面板产生混光和漏光现象，从蓝光显示器件中出射蓝色光源，激发量子点光致转换膜，发出纯净光，纯净光透过色阻变成相应的色彩，从而实现出射光更柔和、更均匀、亮度更高，提高了显示器件色域和视角，从而提升量子点显示面板显示品质。\n\n[0046]综上，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10771, 23825, '技术领域\n\n[0001]本申请涉及显示领域，尤其涉及一种显示模组及显示装置。\n\n背景技术\n\n[0002]随着薄膜晶体管液晶显示器(Thin Film Transistor Liquid Crystal Display，TFT-LCD)的发展，高端机种的导入以及客户需求的提高，对显示面板的对比度提出了越来越高的要求。\n\n[0003]为了达到较佳的对比表现，目前有产品采用双层面板的设计，将对比度提升至十万级别，远高于普通的单层液晶显示面板(对比度仅可达到数千级别)。现有的双层面板是由两个LCD面板组成。底层面板为去除色阻层的LCD，作用在于分区控制背光光源的透过，达到背光分区数1000w(FHD)～2000w(UD)，有效精细地控制背光的亮暗程度；顶层面板为正常设计的LCD，在背光和底层面板的共同作用下达到颜色区分和亮度显示的作用。然而，两个LCD面板的设计对面板对比度的提高有限，且双层面板和背光的设计，使得显示器的能耗增加。\n\n[0004]因此，现有薄膜晶体管液晶显示器存在对比度低的问题，需要改进。\n\n发明内容\n\n[0005]本发明提供一种显示模组及显示装置，以改进现有薄膜晶体管液晶显示器存在对比度低的问题。\n\n[0006]为解决以上问题，本发明提供的技术方案如下：\n\n[0007]本发明提供一种显示模组，其包括：\n\n[0008]液晶显示面板；\n\n[0009]Micro LED显示面板，设置于所述液晶显示面板的下方，与所述液晶显示面板相贴合，所述Micro LED显示面板仅显示白色；\n\n[0010]第一驱动芯片，与所述液晶显示面板相连，用于驱动所述液晶显示面板发光显示；\n\n[0011]第二驱动芯片，与所述Micro LED显示面板相连，用于驱动所述Micro LED显示面板发光显示。\n\n[0012]在本发明提供的显示模组中，所述液晶显示面板包括阵列排布的像素单元，所述第一像素单元包括三个第一子像素；所述Micro LED显示面板包括阵列排布的第二子像素。\n\n[0013]在本发明提供的显示模组中，所述第二子像素与所述第一子像素一一对应。\n\n[0014]在本发明提供的显示模组中，所述第二子像素与所述像素单元一一对应。\n\n[0015]在本发明提供的显示模组中，所述液晶显示面板与所述Micro LED显示面板的贴合方式为，所述液晶显示面板的下表面与所述Micro LED显示面板的上表面通过透明胶层粘接。\n\n[0016]在本发明提供的显示模组中，所述液晶显示面板与所述Micro LED显示面板的贴合方式为，通过位于所述液晶显示面板四周非显示区内的框胶相粘接。\n\n[0017]在本发明提供的显示模组中，所述Micro LED显示面板包括第二阵列基板、以及与所述第二阵列基板键合的Micro LED像素阵列。\n\n[0018]在本发明提供的显示模组中，所述Micro LED像素阵列包括衬底、第一半导体层、有源层、第二半导体层、第一电极、以及第二电极。\n\n[0019]同时，本发明还提供一种显示装置，包括本发明提供的任一显示模组。\n\n[0020]本发明提供了一种显示模组及显示装置，该显示模组包括：液晶显示面板；MicroLED显示面板，设置于液晶显示面板的下方，与液晶显示面板相贴合，Micro LED显示面板仅显示白色；第一驱动芯片，与液晶显示面板相连，用于驱动液晶显示面板发光显示；第二驱动芯片，与Micro LED显示面板相连，用于驱动Micro LED显示面板发光显示。该显示模组采用液晶显示面板和Micro LED显示面板贴合的双层面板设计，去掉背光模组，Micro LED显示面板同时起到背光模组的作用，减少了显示模组的能耗；Micro LED显示面板仅显示白色，通过控制Micro LED显示面板内子像素的发光显示，可以精细地调整液晶显示面板内每一颗像素所需的背光亮度，达到亮度的精准区分，从而显著提高双层显示面板的对比度。\n\n附图说明\n\n[0021]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0022]图1为本发明实施例提供的显示模组的第一种结构示意图。\n\n[0023]图2为本发明实施例提供的显示模组的第二种结构示意图。\n\n具体实施方式\n\n[0024]下面将结合本发明的具体实施方案，对本发明实施方案和/或实施例中的技术方案进行清楚、完整的描述，显而易见的，下面所描述的实施方案和/或实施例仅仅是本发明一部分实施方案和/或实施例，而不是全部的实施方案和/或实施例。基于本发明中的实施方案和/或实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施方案和/或实施例，都属于本发明保护范围。\n\n[0025]本发明所提到的方向用语，例如[上]、[下]、[左]、[右]、[前]、[后]、[内]、[外]、[侧]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明和理解本发明，而非用以限制本发明。术语“第一”、“第二”等仅用于描述目的，而不能理解为指示或是暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”等的特征可以明示或者隐含地包括一个或者更多个该特征。\n\n[0026]针对现有薄膜晶体管液晶显示器存在对比度低的问题，本发明提供显示模组可以缓解这个问题。\n\n[0027]在一种实施例中，如图1和图2所示，本发明提供的显示模组包括：\n\n[0028]液晶显示面板100；\n\n[0029]Micro LED显示面板200，设置于液晶显示面板100的下方，与液晶显示面板100相贴合，Micro LED显示面板200仅显示白色；\n\n[0030]第一驱动芯片(未画出)，与液晶显示面板100相连，用于驱动液晶显示面板100发光显示；\n\n[0031]第二驱动芯片(未画出)，与Micro LED显示面板200相连，用于驱动Micro LED显示面板200发光显示。\n\n[0032]本实施例提供一种显示模组，该显示模组采用液晶显示面板和Micro LED显示面板贴合的双层面板设计，去掉背光模组，Micro LED显示面板同时起到背光模组的作用，减少了显示模组的能耗；Micro LED显示面板仅显示白色，通过控制Micro LED显示面板内子像素的发光显示，可以精细地调整液晶显示面板内每一颗像素所需的背光亮度，达到亮度的精准区分，从而显著提高双层显示面板的对比度，可以将其对比度数值提高至百万级别。\n\n[0033]图1和图2分别为本发明实施例提供的显示模组的两种结构示意图，下面结合图示，对本发明实施例提供的显示模组做进一步的详细介绍。\n\n[0034]液晶显示面板100包括第一阵列基板110、彩膜基板120、位于阵列基板110和彩膜基板120之间的液晶层130、以及位于第一阵列基板110侧的第一偏光片和位于所述彩膜基板120侧的第二偏光片(未画出)。第一阵列基板110上设置有第一像素电极111；彩膜基板120上设置有色阻层121，色阻层121包括依次阵列排布的红色色阻1211、绿色色阻1212、以及蓝色色阻1213；红色色阻1211、绿色色阻1212、蓝色色阻1213与第一像素电极111一一对应，以实现第一像素电极111对位于各色阻下的液晶的驱动。第一驱动芯片绑定于第一阵列基板110。\n\n[0035]Micro LED显示面板200包括第二阵列基板210、以及与第二阵列基板210键合的Micro LED像素阵列220，第二阵列基板210与Micro LED像素阵列220的键合方式为，通过透明导电金属层230将Micro LED芯片焊接在第二阵列基板210上，从而实现Micro LED芯片与第二阵列基板210内像素驱动电路的电连接，以实现驱动信号向micro LED芯片的传输。第二驱动芯片绑定于第二阵列基板210。\n\n[0036]在一种实施例中，如图1所示，Micro LED像素阵列220包括若干阵列排布的MicroLED芯片，每个Micro LED芯片包括衬底221、第一半导体层222、有源层223、第二半导体层224、第一电极225、以及第二电极226。\n\n[0037]其中，衬底221用于支撑Micro LED芯片，可以是蓝宝石玻璃基板，可以是蓝宝石玻璃基板和形成于蓝宝石衬底上靠近N型半导体层222侧的氮化镓(GaN)本征层，也可以是去除蓝宝石玻璃基板后的氮化镓(GaN)本征层；在其他实施方案中，Micro LED芯片还可以不包括衬底，即在Micro LED芯片制作完成后去除了衬底。\n\n[0038]第一半导体层222，形成于衬底221之下，第一半导体层222为N型氮化镓(GaN)层，N型氮化镓(GaN)层可以是硅(Si)掺杂的氮化镓层；有源层223，形成于第一半导体层222之下，有源层223为氮化镓(GaN)多量子阱层，氮化镓(GaN)多量子阱层可以是依次重复排列的氮化铟镓/氮化镓(InGaN/GaN)层；第二半导体层224，形成于有源层223之下，第二半导体层224为P型氮化镓(GaN)层，P型氮化镓(GaN)层可以是镁(Mg)掺杂的氮化镓层。\n\n[0039]第一电极225，形成于第二半导体层224之下，第一电极225为P型电极，第二阵列基板210上设置有第二像素电极211，第一电极225通过透明导电金属层230与第二像素电极211电连接。第一半导体层222包括突出的台面和露出的底部，有源层223形成于突出的台面上，第二电极226形成于露出的底部上，电连接第一半导体层222，第二电极226为N型电极。第一电极225和第二电极226的材料为透明的导电金属或金属合金，如氧化铟锡(ITO)、氧化铟锌(IZO)等，可以采用单层金属结构，也可以采用多层金属结构。\n\n[0040]N型半导体层222、有源层223和P型半导体层224构成发光PN结，通过P型半导体层224与第一电极225电连接，N型半导体层222与第二电极226电连接，可将上述发光PN结电连接到外电路中，从而实现第二驱动芯片给发光PN结施加电压。当第二驱动芯片对发光PN结施加电压时，N型半导体层222中产生电子，注入到有源层223内，P型半导体层224中产生空穴，注入到有源层223内；电子和空穴在有源层223内复合发出光子，实现电能到光能的转换，从而完成Micro-LED芯片的电致发光。\n\n[0041]在本实施例中，Micro LED芯片为蓝色Micro LED芯片，发光PN结发出的光为蓝光，要实现Micro LED仅显示白色，需要在Micro LED芯片内或是Micro LED芯片外设置发光介质层227，将发光PN结发出的蓝光转换为白光。发光介质层227的材料为黄光材料，可以是量子点光致发光材料、钙钛矿光致发光材料和纳米荧光粉中的至少一种。蓝光LED芯片发出的蓝光(450-455nm)照射到黄光介质层，蓝光波长的光线激发黄光介质层内的材料发射出不同波长的光线，即光致发光，展现出白色光波(400-800nm)，实现蓝光向白光的转换。\n\n[0042]电致发光(Electroluminescent，EL)是指在电场的驱动下，将电能直接转换为光能的物理作用。光致发光(Photoluminescence，PL)是指发光物质在吸收了光子或者电磁波的能量后，重新以光子或者电磁波的形式辐射出能量的过程。\n\n[0043]在一种实施方案中，如图1所示，发光介质层227形成于衬底221之上，且为整面设置。发光介质层227的整面设置方式，保证了Micro-LED芯片发出的蓝光在经过发光介质层227时全部被转换为白光，避免了杂光照射到液晶显示面板100情况的发生。\n\n[0044]在另一种实施方案中，发光介质层227形成于衬底221与第一半导体层222之间，同样为整面设置。\n\n[0045]在另一种实施例中，如图2所示，Micro LED像素阵列220包括若干阵列排布的Micro LED芯片，每个Micro LED芯片包括衬底221、第一半导体层222、有源层223、第二半导体层224、第一电极225、以及第二电极226。其中，衬底221、第一半导体层222、第二半导体层224、第一电极225、第二电极226与上文图1所示的实施例相类似，具体可参照上述实施例，在此不做赘述。\n\n[0046]不同于上述实施例，在本实施例中，有源层223的材料为多发光混合材料，有源层可以是将不同颜色发光材料混合成一层的单层结构，可以是采用红色发光材料、绿色发光材料、蓝色发光材料纵向堆叠而成的三层结构，也可以是将红色发光材料、绿色发光材料、蓝色发光材料横向堆叠而成的单层拼接结构，在此不做限定。\n\n[0047]同样的，N型半导体层222、有源层223和P型半导体层224构成发光PN结，通过P型半导体层224与第一电极225电连接，N型半导体层222与第二电极226电连接，实现第二驱动芯片给发光PN结施加电压。当第二驱动芯片对发光PN结施加电压时，N型半导体层222中产生电子，注入到有源层223内，P型半导体层224中产生空穴，注入到有源层223内；电子和空穴在有源层223内复合发出光子，实现电能到光能的转换，从而完成Micro-LED芯片的电致发光。\n\n[0048]有源层223内发生光电转换的过程中，不同颜色的发光材料将实现不同的光电转换，发出不同波长的光子，这些不同波长的光子混合发光产生白光，从而实现Micro-LED芯片发出白光，Micro-LED显示面板显示白色。\n\n[0049]通过控制外接电路，调节施加到Micro-LED芯片上的电信号(包括电压、电流或功率)强度的大小，就可以控制Micro-LED芯片电致发光的强度，Micro-LED显示面板显示白光的亮度；通常，电信号强度越大，Micro-LED芯片电致发光的发光强度越大，Micro-LED显示面板显示白光的亮度越大。调节施加到Micro-LED芯片上的电信号持续时间的长短，就可以控制Micro-LED芯片电致发光的时间长度，Micro-LED显示面板显示白光的时间长度；通常，电信号持续的时间越长，Micro-LED芯片电致发光的时间越长，Micro-LED显示面板显示白光的时间越长。\n\n[0050]通过控制施加到每个Micro LED芯片上的电信号的强度和时间，可以实现对MicroLED显示面板内每个子像素的精确控制，进而实现对每个子像素显示的白色亮度及显示时间的控制。\n\n[0051]在本发明中，液晶显示面板100显示区的尺寸与Micro LED显示面板200显示区的尺寸相同，且液晶显示面板100的显示区与Micro LED显示面板200的显示区在空间内相互重叠。\n\n[0052]在一种实施例中，如图1所示，液晶显示面板100与Micro LED显示面板200通过透明胶层300粘接在一起。由于透明胶层300为位于液晶显示面板100和Micro LED显示面板200之间的整面设置，Micro LED显示面板200发射出来的光线需要通过透明胶层300才能达到液晶显示面板100，因此透明胶层300必须采用无色透明材料；优选的，透明胶层300的材料为透明光学胶(Optically Clear Adhesive，OCA)。通过透明胶层300整面粘接的方式，将液晶显示面板100与Micro LED显示面板结合在一起，有利于将液晶显示面板100与MicroLED显示面板贴合的更为紧密。\n\n[0053]在另一种实施例中，如图2所示，液晶显示面板100与Micro LED显示面板200通过位于液晶显示面板100四周非显示区内的框胶400粘接在一起。由于框胶400位于液晶显示面板100四周的非显示区内，因此无需考虑其对Micro LED显示面板光线的阻挡风险，框胶400的材料可以是无色透明材料，可以是有色透明材料，也可以是非透明材料。框胶400材料的选择范围更为广泛，相应的，可以选取粘接效果更好材料，以保证液晶显示面板100与Micro LED显示面板的粘接效果，避免液晶显示面板100与Micro LED显示面板之间的剥离；还可以选取成本更低的材料，以降低显示模组的制备成本。\n\n[0054]本发明提供的显示模组去除了背光模组，Micro LED显示面板200作为液晶显示面板100的背光源，通过显示面板内的像素发光，向液晶显示面板100提供白色光线。如图1和图2所示，液晶显示面板100包括阵列排布像素单元，每个像素单元包括三个第一子像素，分别为红色子像素、绿色子像素和蓝色子像素；Micro LED显示面板包括阵列排布的第二子像素。\n\n[0055]在一种实施例中，如图1所示，第二子像素与液晶显示面板110内的第一子像素一一对应设置，第二子像素的尺寸和与之对应的第一子像素的尺寸相同，这样有利于第二子像素发出的光线刚好能够为对应的第一子像素提供背光源。通过控制Micro LED显示面板内第二子像素的发光显示，可以控制照射到该对应第一子像素上的白色光线的强度，精细地调整每个第一子像素所需的背光强度，达到亮度的精准区分，一一对应的控制方式，极为精细，能够显著提高显示面板的对比度，其对比度的数值可高达百万级别。\n\n[0056]在另一种实施例中，第二子像素与液晶显示面板110内的像素单元一一对应，即一个Micro LED芯片对应于一组红色、绿色、蓝色子像素，通过控制Micro LED显示面板内第二子像素的发光显示，可以控制照射到该对应像素单元上的光线的强度，从而达到对背光源光线的精细控制，一对三的控制方式，同样十分精细，能够显著提高显示面板的对比度，其对比度的数值可高达百万级别。相较于图1中所示的实施例，一个第二子像素对应于三个第一子像素，每个像素单元可以节约两个Micro LED芯片，降低了产品的成本，Micro LED芯片的尺寸也可以做到图1实施例中的三倍大，降低技术难度，良率也较高，进一步降低生产成本。\n\n[0057]在其他实施例中，第二子像素也可以对应两个像素单元、三个像素单元、或者其他任意个像素单元，还可以对应两个第一子像素、四个第一子像素、或者其他任意个第一子像素。\n\n[0058]第二子像素的尺寸为1um-100um，Micro LED像素阵列220可以通过巨量转移的方式与第二阵列基板210进行键合。巨量转移制程是一次将大量Micro LED像素阵列220转移到基板上的工艺，旨在提高Micro LED像素阵列220的良率。巨量转移制程可以通过真空吸附、静电吸附或磁吸附等手段将Micro LED像素阵列220吸附而转移到第二阵列基板210上。\n\n[0059]同时，本发明还提供一种显示装置，其包括显示模组，该显示模组包括：\n\n[0060]液晶显示面板；\n\n[0061]Micro LED显示面板，设置于液晶显示面板的下方，与液晶显示面板相贴合，MicroLED显示面板仅显示白色；\n\n[0062]第一驱动芯片，与液晶显示面板相连，用于驱动液晶显示面板发光显示；\n\n[0063]第二驱动芯片，与Micro LED显示面板相连，用于驱动Micro LED显示面板发光显示。\n\n[0064]本实施例提供一种显示装置，其包括显示模组，该显示模组采用液晶显示面板和Micro LED显示面板贴合的双层面板设计，去掉背光模组，Micro LED显示面板同时起到背光模组的作用，减少了显示模组的能耗；Micro LED显示面板仅显示白色，通过控制MicroLED显示面板内子像素的发光显示，可以精细地调整液晶显示面板内每一颗像素所需的背光亮度，达到亮度的精准区分，从而显著提高双层显示面板的对比度，可以将其对比度数值提高至百万级别。\n\n[0065]在一种实施例中，液晶显示面板包括阵列排布的像素单元，第一像素单元包括三个第一子像素；Micro LED显示面板包括阵列排布的第二子像素。\n\n[0066]在一种实施例中，第二子像素与第一子像素一一对应。\n\n[0067]在一种实施例中，第二子像素与像素单元一一对应。\n\n[0068]在一种实施例中，液晶显示面板与Micro LED显示面板的贴合方式为，液晶显示面板与Micro LED显示面板通过透明胶层粘接。\n\n[0069]在一种实施例中，液晶显示面板与Micro LED显示面板的贴合方式为，通过位于液晶显示面板四周非显示区内的框胶相粘接。\n\n[0070]在一种实施例中，Micro LED显示面板包括第二阵列基板、以及与第二阵列基板键合的Micro LED像素阵列。\n\n[0071]在一种实施例中，Micro LED像素阵列包括衬底、第一半导体层、有源层、第二半导体层、第一电极、以及第二电极。\n\n[0072]在一种实施例中，Micro LED像素阵列还包括发光介质层。\n\n[0073]在一种实施例中，有源层为多发光混合材料。\n\n[0074]根据上述实施例可知：\n\n[0075]本发明实施例提供了一种显示模组及显示装置，该显示模组包括：液晶显示面板；Micro LED显示面板，设置于液晶显示面板的下方，与液晶显示面板相贴合，Micro LED显示面板仅显示白色；第一驱动芯片，与液晶显示面板相连，用于驱动液晶显示面板发光显示；第二驱动芯片，与Micro LED显示面板相连，用于驱动Micro LED显示面板发光显示。该显示模组采用液晶显示面板和Micro LED显示面板贴合的双层面板设计，去掉背光模组，MicroLED显示面板同时起到背光模组的作用，减少了显示模组的能耗；Micro LED显示面板仅显示白色，通过控制Micro LED显示面板内子像素的发光显示，可以精细地调整液晶显示面板内每一颗像素所需的背光亮度，达到亮度的精准区分，从而显著提高双层显示面板的对比度，可以将其对比度数值提高至百万级别。\n\n[0076]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本申请涉及显示领域，尤其涉及一种显示模组及显示装置。\n\n背景技术\n\n[0002]随着薄膜晶体管液晶显示器(Thin Film Transistor Liquid Crystal Display，TFT-LCD)的发展，高端机种的导入以及客户需求的提高，对显示面板的对比度提出了越来越高的要求。\n\n[0003]为了达到较佳的对比表现，目前有产品采用双层面板的设计，将对比度提升至十万级别，远高于普通的单层液晶显示面板(对比度仅可达到数千级别)。现有的双层面板是由两个LCD面板组成。底层面板为去除色阻层的LCD，作用在于分区控制背光光源的透过，达到背光分区数1000w(FHD)～2000w(UD)，有效精细地控制背光的亮暗程度；顶层面板为正常设计的LCD，在背光和底层面板的共同作用下达到颜色区分和亮度显示的作用。然而，两个LCD面板的设计对面板对比度的提高有限，且双层面板和背光的设计，使得显示器的能耗增加。\n\n[0004]因此，现有薄膜晶体管液晶显示器存在对比度低的问题，需要改进。\n\n发明内容\n\n[0005]本发明提供一种显示模组及显示装置，以改进现有薄膜晶体管液晶显示器存在对比度低的问题。\n\n[0006]为解决以上问题，本发明提供的技术方案如下：\n\n[0007]本发明提供一种显示模组，其包括：\n\n[0008]液晶显示面板；\n\n[0009]Micro LED显示面板，设置于所述液晶显示面板的下方，与所述液晶显示面板相贴合，所述Micro LED显示面板仅显示白色；\n\n[0010]第一驱动芯片，与所述液晶显示面板相连，用于驱动所述液晶显示面板发光显示；\n\n[0011]第二驱动芯片，与所述Micro LED显示面板相连，用于驱动所述Micro LED显示面板发光显示。\n\n[0012]在本发明提供的显示模组中，所述液晶显示面板包括阵列排布的像素单元，所述第一像素单元包括三个第一子像素；所述Micro LED显示面板包括阵列排布的第二子像素。\n\n[0013]在本发明提供的显示模组中，所述第二子像素与所述第一子像素一一对应。\n\n[0014]在本发明提供的显示模组中，所述第二子像素与所述像素单元一一对应。\n\n[0015]在本发明提供的显示模组中，所述液晶显示面板与所述Micro LED显示面板的贴合方式为，所述液晶显示面板的下表面与所述Micro LED显示面板的上表面通过透明胶层粘接。\n\n[0016]在本发明提供的显示模组中，所述液晶显示面板与所述Micro LED显示面板的贴合方式为，通过位于所述液晶显示面板四周非显示区内的框胶相粘接。\n\n[0017]在本发明提供的显示模组中，所述Micro LED显示面板包括第二阵列基板、以及与所述第二阵列基板键合的Micro LED像素阵列。\n\n[0018]在本发明提供的显示模组中，所述Micro LED像素阵列包括衬底、第一半导体层、有源层、第二半导体层、第一电极、以及第二电极。\n\n[0019]同时，本发明还提供一种显示装置，包括本发明提供的任一显示模组。\n\n[0020]本发明提供了一种显示模组及显示装置，该显示模组包括：液晶显示面板；MicroLED显示面板，设置于液晶显示面板的下方，与液晶显示面板相贴合，Micro LED显示面板仅显示白色；第一驱动芯片，与液晶显示面板相连，用于驱动液晶显示面板发光显示；第二驱动芯片，与Micro LED显示面板相连，用于驱动Micro LED显示面板发光显示。该显示模组采用液晶显示面板和Micro LED显示面板贴合的双层面板设计，去掉背光模组，Micro LED显示面板同时起到背光模组的作用，减少了显示模组的能耗；Micro LED显示面板仅显示白色，通过控制Micro LED显示面板内子像素的发光显示，可以精细地调整液晶显示面板内每一颗像素所需的背光亮度，达到亮度的精准区分，从而显著提高双层显示面板的对比度。\n\n附图说明\n\n[0021]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0022]图1为本发明实施例提供的显示模组的第一种结构示意图。\n\n[0023]图2为本发明实施例提供的显示模组的第二种结构示意图。\n\n具体实施方式\n\n[0024]下面将结合本发明的具体实施方案，对本发明实施方案和/或实施例中的技术方案进行清楚、完整的描述，显而易见的，下面所描述的实施方案和/或实施例仅仅是本发明一部分实施方案和/或实施例，而不是全部的实施方案和/或实施例。基于本发明中的实施方案和/或实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施方案和/或实施例，都属于本发明保护范围。\n\n[0025]本发明所提到的方向用语，例如[上]、[下]、[左]、[右]、[前]、[后]、[内]、[外]、[侧]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明和理解本发明，而非用以限制本发明。术语“第一”、“第二”等仅用于描述目的，而不能理解为指示或是暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”等的特征可以明示或者隐含地包括一个或者更多个该特征。\n\n[0026]针对现有薄膜晶体管液晶显示器存在对比度低的问题，本发明提供显示模组可以缓解这个问题。\n\n[0027]在一种实施例中，如图1和图2所示，本发明提供的显示模组包括：\n\n[0028]液晶显示面板100；\n\n[0029]Micro LED显示面板200，设置于液晶显示面板100的下方，与液晶显示面板100相贴合，Micro LED显示面板200仅显示白色；\n\n[0030]第一驱动芯片(未画出)，与液晶显示面板100相连，用于驱动液晶显示面板100发光显示；\n\n[0031]第二驱动芯片(未画出)，与Micro LED显示面板200相连，用于驱动Micro LED显示面板200发光显示。\n\n[0032]本实施例提供一种显示模组，该显示模组采用液晶显示面板和Micro LED显示面板贴合的双层面板设计，去掉背光模组，Micro LED显示面板同时起到背光模组的作用，减少了显示模组的能耗；Micro LED显示面板仅显示白色，通过控制Micro LED显示面板内子像素的发光显示，可以精细地调整液晶显示面板内每一颗像素所需的背光亮度，达到亮度的精准区分，从而显著提高双层显示面板的对比度，可以将其对比度数值提高至百万级别。\n\n[0033]图1和图2分别为本发明实施例提供的显示模组的两种结构示意图，下面结合图示，对本发明实施例提供的显示模组做进一步的详细介绍。\n\n[0034]液晶显示面板100包括第一阵列基板110、彩膜基板120、位于阵列基板110和彩膜基板120之间的液晶层130、以及位于第一阵列基板110侧的第一偏光片和位于所述彩膜基板120侧的第二偏光片(未画出)。第一阵列基板110上设置有第一像素电极111；彩膜基板120上设置有色阻层121，色阻层121包括依次阵列排布的红色色阻1211、绿色色阻1212、以及蓝色色阻1213；红色色阻1211、绿色色阻1212、蓝色色阻1213与第一像素电极111一一对应，以实现第一像素电极111对位于各色阻下的液晶的驱动。第一驱动芯片绑定于第一阵列基板110。\n\n[0035]Micro LED显示面板200包括第二阵列基板210、以及与第二阵列基板210键合的Micro LED像素阵列220，第二阵列基板210与Micro LED像素阵列220的键合方式为，通过透明导电金属层230将Micro LED芯片焊接在第二阵列基板210上，从而实现Micro LED芯片与第二阵列基板210内像素驱动电路的电连接，以实现驱动信号向micro LED芯片的传输。第二驱动芯片绑定于第二阵列基板210。\n\n[0036]在一种实施例中，如图1所示，Micro LED像素阵列220包括若干阵列排布的MicroLED芯片，每个Micro LED芯片包括衬底221、第一半导体层222、有源层223、第二半导体层224、第一电极225、以及第二电极226。\n\n[0037]其中，衬底221用于支撑Micro LED芯片，可以是蓝宝石玻璃基板，可以是蓝宝石玻璃基板和形成于蓝宝石衬底上靠近N型半导体层222侧的氮化镓(GaN)本征层，也可以是去除蓝宝石玻璃基板后的氮化镓(GaN)本征层；在其他实施方案中，Micro LED芯片还可以不包括衬底，即在Micro LED芯片制作完成后去除了衬底。\n\n[0038]第一半导体层222，形成于衬底221之下，第一半导体层222为N型氮化镓(GaN)层，N型氮化镓(GaN)层可以是硅(Si)掺杂的氮化镓层；有源层223，形成于第一半导体层222之下，有源层223为氮化镓(GaN)多量子阱层，氮化镓(GaN)多量子阱层可以是依次重复排列的氮化铟镓/氮化镓(InGaN/GaN)层；第二半导体层224，形成于有源层223之下，第二半导体层224为P型氮化镓(GaN)层，P型氮化镓(GaN)层可以是镁(Mg)掺杂的氮化镓层。\n\n[0039]第一电极225，形成于第二半导体层224之下，第一电极225为P型电极，第二阵列基板210上设置有第二像素电极211，第一电极225通过透明导电金属层230与第二像素电极211电连接。第一半导体层222包括突出的台面和露出的底部，有源层223形成于突出的台面上，第二电极226形成于露出的底部上，电连接第一半导体层222，第二电极226为N型电极。第一电极225和第二电极226的材料为透明的导电金属或金属合金，如氧化铟锡(ITO)、氧化铟锌(IZO)等，可以采用单层金属结构，也可以采用多层金属结构。\n\n[0040]N型半导体层222、有源层223和P型半导体层224构成发光PN结，通过P型半导体层224与第一电极225电连接，N型半导体层222与第二电极226电连接，可将上述发光PN结电连接到外电路中，从而实现第二驱动芯片给发光PN结施加电压。当第二驱动芯片对发光PN结施加电压时，N型半导体层222中产生电子，注入到有源层223内，P型半导体层224中产生空穴，注入到有源层223内；电子和空穴在有源层223内复合发出光子，实现电能到光能的转换，从而完成Micro-LED芯片的电致发光。\n\n[0041]在本实施例中，Micro LED芯片为蓝色Micro LED芯片，发光PN结发出的光为蓝光，要实现Micro LED仅显示白色，需要在Micro LED芯片内或是Micro LED芯片外设置发光介质层227，将发光PN结发出的蓝光转换为白光。发光介质层227的材料为黄光材料，可以是量子点光致发光材料、钙钛矿光致发光材料和纳米荧光粉中的至少一种。蓝光LED芯片发出的蓝光(450-455nm)照射到黄光介质层，蓝光波长的光线激发黄光介质层内的材料发射出不同波长的光线，即光致发光，展现出白色光波(400-800nm)，实现蓝光向白光的转换。\n\n[0042]电致发光(Electroluminescent，EL)是指在电场的驱动下，将电能直接转换为光能的物理作用。光致发光(Photoluminescence，PL)是指发光物质在吸收了光子或者电磁波的能量后，重新以光子或者电磁波的形式辐射出能量的过程。\n\n[0043]在一种实施方案中，如图1所示，发光介质层227形成于衬底221之上，且为整面设置。发光介质层227的整面设置方式，保证了Micro-LED芯片发出的蓝光在经过发光介质层227时全部被转换为白光，避免了杂光照射到液晶显示面板100情况的发生。\n\n[0044]在另一种实施方案中，发光介质层227形成于衬底221与第一半导体层222之间，同样为整面设置。\n\n[0045]在另一种实施例中，如图2所示，Micro LED像素阵列220包括若干阵列排布的Micro LED芯片，每个Micro LED芯片包括衬底221、第一半导体层222、有源层223、第二半导体层224、第一电极225、以及第二电极226。其中，衬底221、第一半导体层222、第二半导体层224、第一电极225、第二电极226与上文图1所示的实施例相类似，具体可参照上述实施例，在此不做赘述。\n\n[0046]不同于上述实施例，在本实施例中，有源层223的材料为多发光混合材料，有源层可以是将不同颜色发光材料混合成一层的单层结构，可以是采用红色发光材料、绿色发光材料、蓝色发光材料纵向堆叠而成的三层结构，也可以是将红色发光材料、绿色发光材料、蓝色发光材料横向堆叠而成的单层拼接结构，在此不做限定。\n\n[0047]同样的，N型半导体层222、有源层223和P型半导体层224构成发光PN结，通过P型半导体层224与第一电极225电连接，N型半导体层222与第二电极226电连接，实现第二驱动芯片给发光PN结施加电压。当第二驱动芯片对发光PN结施加电压时，N型半导体层222中产生电子，注入到有源层223内，P型半导体层224中产生空穴，注入到有源层223内；电子和空穴在有源层223内复合发出光子，实现电能到光能的转换，从而完成Micro-LED芯片的电致发光。\n\n[0048]有源层223内发生光电转换的过程中，不同颜色的发光材料将实现不同的光电转换，发出不同波长的光子，这些不同波长的光子混合发光产生白光，从而实现Micro-LED芯片发出白光，Micro-LED显示面板显示白色。\n\n[0049]通过控制外接电路，调节施加到Micro-LED芯片上的电信号(包括电压、电流或功率)强度的大小，就可以控制Micro-LED芯片电致发光的强度，Micro-LED显示面板显示白光的亮度；通常，电信号强度越大，Micro-LED芯片电致发光的发光强度越大，Micro-LED显示面板显示白光的亮度越大。调节施加到Micro-LED芯片上的电信号持续时间的长短，就可以控制Micro-LED芯片电致发光的时间长度，Micro-LED显示面板显示白光的时间长度；通常，电信号持续的时间越长，Micro-LED芯片电致发光的时间越长，Micro-LED显示面板显示白光的时间越长。\n\n[0050]通过控制施加到每个Micro LED芯片上的电信号的强度和时间，可以实现对MicroLED显示面板内每个子像素的精确控制，进而实现对每个子像素显示的白色亮度及显示时间的控制。\n\n[0051]在本发明中，液晶显示面板100显示区的尺寸与Micro LED显示面板200显示区的尺寸相同，且液晶显示面板100的显示区与Micro LED显示面板200的显示区在空间内相互重叠。\n\n[0052]在一种实施例中，如图1所示，液晶显示面板100与Micro LED显示面板200通过透明胶层300粘接在一起。由于透明胶层300为位于液晶显示面板100和Micro LED显示面板200之间的整面设置，Micro LED显示面板200发射出来的光线需要通过透明胶层300才能达到液晶显示面板100，因此透明胶层300必须采用无色透明材料；优选的，透明胶层300的材料为透明光学胶(Optically Clear Adhesive，OCA)。通过透明胶层300整面粘接的方式，将液晶显示面板100与Micro LED显示面板结合在一起，有利于将液晶显示面板100与MicroLED显示面板贴合的更为紧密。\n\n[0053]在另一种实施例中，如图2所示，液晶显示面板100与Micro LED显示面板200通过位于液晶显示面板100四周非显示区内的框胶400粘接在一起。由于框胶400位于液晶显示面板100四周的非显示区内，因此无需考虑其对Micro LED显示面板光线的阻挡风险，框胶400的材料可以是无色透明材料，可以是有色透明材料，也可以是非透明材料。框胶400材料的选择范围更为广泛，相应的，可以选取粘接效果更好材料，以保证液晶显示面板100与Micro LED显示面板的粘接效果，避免液晶显示面板100与Micro LED显示面板之间的剥离；还可以选取成本更低的材料，以降低显示模组的制备成本。\n\n[0054]本发明提供的显示模组去除了背光模组，Micro LED显示面板200作为液晶显示面板100的背光源，通过显示面板内的像素发光，向液晶显示面板100提供白色光线。如图1和图2所示，液晶显示面板100包括阵列排布像素单元，每个像素单元包括三个第一子像素，分别为红色子像素、绿色子像素和蓝色子像素；Micro LED显示面板包括阵列排布的第二子像素。\n\n[0055]在一种实施例中，如图1所示，第二子像素与液晶显示面板110内的第一子像素一一对应设置，第二子像素的尺寸和与之对应的第一子像素的尺寸相同，这样有利于第二子像素发出的光线刚好能够为对应的第一子像素提供背光源。通过控制Micro LED显示面板内第二子像素的发光显示，可以控制照射到该对应第一子像素上的白色光线的强度，精细地调整每个第一子像素所需的背光强度，达到亮度的精准区分，一一对应的控制方式，极为精细，能够显著提高显示面板的对比度，其对比度的数值可高达百万级别。\n\n[0056]在另一种实施例中，第二子像素与液晶显示面板110内的像素单元一一对应，即一个Micro LED芯片对应于一组红色、绿色、蓝色子像素，通过控制Micro LED显示面板内第二子像素的发光显示，可以控制照射到该对应像素单元上的光线的强度，从而达到对背光源光线的精细控制，一对三的控制方式，同样十分精细，能够显著提高显示面板的对比度，其对比度的数值可高达百万级别。相较于图1中所示的实施例，一个第二子像素对应于三个第一子像素，每个像素单元可以节约两个Micro LED芯片，降低了产品的成本，Micro LED芯片的尺寸也可以做到图1实施例中的三倍大，降低技术难度，良率也较高，进一步降低生产成本。\n\n[0057]在其他实施例中，第二子像素也可以对应两个像素单元、三个像素单元、或者其他任意个像素单元，还可以对应两个第一子像素、四个第一子像素、或者其他任意个第一子像素。\n\n[0058]第二子像素的尺寸为1um-100um，Micro LED像素阵列220可以通过巨量转移的方式与第二阵列基板210进行键合。巨量转移制程是一次将大量Micro LED像素阵列220转移到基板上的工艺，旨在提高Micro LED像素阵列220的良率。巨量转移制程可以通过真空吸附、静电吸附或磁吸附等手段将Micro LED像素阵列220吸附而转移到第二阵列基板210上。\n\n[0059]同时，本发明还提供一种显示装置，其包括显示模组，该显示模组包括：\n\n[0060]液晶显示面板；\n\n[0061]Micro LED显示面板，设置于液晶显示面板的下方，与液晶显示面板相贴合，MicroLED显示面板仅显示白色；\n\n[0062]第一驱动芯片，与液晶显示面板相连，用于驱动液晶显示面板发光显示；\n\n[0063]第二驱动芯片，与Micro LED显示面板相连，用于驱动Micro LED显示面板发光显示。\n\n[0064]本实施例提供一种显示装置，其包括显示模组，该显示模组采用液晶显示面板和Micro LED显示面板贴合的双层面板设计，去掉背光模组，Micro LED显示面板同时起到背光模组的作用，减少了显示模组的能耗；Micro LED显示面板仅显示白色，通过控制MicroLED显示面板内子像素的发光显示，可以精细地调整液晶显示面板内每一颗像素所需的背光亮度，达到亮度的精准区分，从而显著提高双层显示面板的对比度，可以将其对比度数值提高至百万级别。\n\n[0065]在一种实施例中，液晶显示面板包括阵列排布的像素单元，第一像素单元包括三个第一子像素；Micro LED显示面板包括阵列排布的第二子像素。\n\n[0066]在一种实施例中，第二子像素与第一子像素一一对应。\n\n[0067]在一种实施例中，第二子像素与像素单元一一对应。\n\n[0068]在一种实施例中，液晶显示面板与Micro LED显示面板的贴合方式为，液晶显示面板与Micro LED显示面板通过透明胶层粘接。\n\n[0069]在一种实施例中，液晶显示面板与Micro LED显示面板的贴合方式为，通过位于液晶显示面板四周非显示区内的框胶相粘接。\n\n[0070]在一种实施例中，Micro LED显示面板包括第二阵列基板、以及与第二阵列基板键合的Micro LED像素阵列。\n\n[0071]在一种实施例中，Micro LED像素阵列包括衬底、第一半导体层、有源层、第二半导体层、第一电极、以及第二电极。\n\n[0072]在一种实施例中，Micro LED像素阵列还包括发光介质层。\n\n[0073]在一种实施例中，有源层为多发光混合材料。\n\n[0074]根据上述实施例可知：\n\n[0075]本发明实施例提供了一种显示模组及显示装置，该显示模组包括：液晶显示面板；Micro LED显示面板，设置于液晶显示面板的下方，与液晶显示面板相贴合，Micro LED显示面板仅显示白色；第一驱动芯片，与液晶显示面板相连，用于驱动液晶显示面板发光显示；第二驱动芯片，与Micro LED显示面板相连，用于驱动Micro LED显示面板发光显示。该显示模组采用液晶显示面板和Micro LED显示面板贴合的双层面板设计，去掉背光模组，MicroLED显示面板同时起到背光模组的作用，减少了显示模组的能耗；Micro LED显示面板仅显示白色，通过控制Micro LED显示面板内子像素的发光显示，可以精细地调整液晶显示面板内每一颗像素所需的背光亮度，达到亮度的精准区分，从而显著提高双层显示面板的对比度，可以将其对比度数值提高至百万级别。\n\n[0076]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10772, 23826, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种背光模组及显示装置。\n\n背景技术\n\n[0002]背光源作为提升LCD(Liquid Crystal Display、液晶显示器)显示器色彩及亮度的关键模块，目前将量子点背光源加LCD显示屏的电视称为量子点电视，相比普通LCD电视，其具有高对比度，色域广，色饱和度、色纯度高等优异的特点，传统的量子点电视为蓝光LED背光源激发量子点薄膜发出白光作为量子点背光源，其光学结构可以为直下式结构也可以为侧入式结构，由于本质上量子点电视依然是被动发光的显示器，因此同样存在对比度不高的问题，更进一步的，由于相比普通背光源多了一层量子点膜，若采用传统的直下式动态背光方式，存在以下问题\n\n[0003]由于光对整个量子点膜都有激发作用，因此控制局部LED亮灭都会造成整张膜产生不均匀的照明效果，进而使得相邻单元之间产生更加严重的亮度串扰影响显示效果。\n\n发明内容\n\n[0004]本申请实施例提供一种背光模组及显示装置，可以避免相邻背光单元之间产生亮度串扰，从而提高显示效果。\n\n[0005]本申请提供一种背光模组，包括若干背光单元，所述背光单元包括：\n\n[0006]背板，具有相对设置的第一面和第二面；\n\n[0007]发光部，设置在所述第一面；\n\n[0008]反射透镜，设置在所述第一面上，且与所述发光部对应，所述反射透镜用于反射所述发光部的光线；\n\n[0009]量子点薄膜，设置在所述反射透镜远离所述背板的一侧；\n\n[0010]封装边框，所述封装边框将背板、发光部、反射透镜以及量子点薄膜封装在封装边框内。\n\n[0011]在一些实施例中，所述背光单元还包括第一增亮膜，所述第一增亮膜设置在所述量子点薄膜远离所述背板的一侧。\n\n[0012]在一些实施例中，所述背光单元还包括电路板，所述电路板设置在所述背板的第一面，所述电路板用于与驱动电源连接。\n\n[0013]在一些实施例中，所述反射透镜远离所述背板的一侧为棱柱微结构，所述反射透镜靠近所述背板的一侧为半球形结构。\n\n[0014]在一些实施例中，所述半球形结构的靠近所述背板的端部设有一缺口，所述缺口与所述发光部对应。\n\n[0015]在一些实施例中，所述反射透镜的材料为聚甲基丙烯酸甲酯。\n\n[0016]在一些实施例中，所述量子点薄膜为三基色或二基色量子点材料的混合薄膜。\n\n[0017]在一些实施例中，所述发光部为蓝光的液晶发光二极管。\n\n[0018]在一些实施例中，所述背板模组还包括第二增亮膜，所述第二增亮膜设置在所述背光单元上。\n\n[0019]本申请实施例还一种显示装置，包括背光模组，所述背光模组为以上所述的背光模组。\n\n[0020]在一些实施例中，所述封胶层位于所述通孔的孔壁与所述透光区域之间。\n\n[0021]本申请实施例所提供的背光模组包括若干背光单元，所述背光单元包括背板、发光部、反射透镜、量子点薄膜以及封装边框，背板具有相对设置的第一面和第二面，发光部设置在所述第一面，反射透镜设置在所述第一面上，且与所述发光部对应，所述反射透镜用于反射所述发光部的光线，量子点薄膜设置在所述反射透镜远离所述背板的一侧，封装边框所述封装边框将背板、发光部、反射透镜以及量子点薄膜封装在封装边框内。本申请将背光模组形成多个独立背光单元，每一个独立的背光单元可以形成背光源，通过独立的控制背光单元，消除相邻单元之间的背光串扰，提高对比度及显示均匀性。\n\n附图说明\n\n[0022]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0023]图1为本申请实施例提供的背光模组的结构示意图。\n\n[0024]图2为本申请实施例提供的背光模组另一个的结构示意图。\n\n[0025]图3为本申请实施例提供的背光单元的结构示意图。\n\n[0026]图4为本申请实施例提供的显示面板的结构示意图。\n\n具体实施方式\n\n[0027]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0028]需要说明的是，在本申请的描述中，需要理解的是，术语“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。\n\n[0029]本申请实施例提供一种背光单元和显示装置，以下对背光单元做详细介绍。\n\n[0030]请参阅图1至图3，图1为本申请实施例提供的背光模组的结构示意图。图2为本申请实施例提供的背光模组另一个的结构示意图。图3为本申请实施例提供的背光单元的结构示意图。\n\n[0031]其中，本申请实施例提供的背光模组10包括若干背光单元11，所述背光单元11包括背板111、发光部112、反射透镜113、量子点薄膜114以及封装边框115，背板111具有相对设置的第一面111a和第二面111b，发光部112设置在所述第一面111a，反射透镜113设置在所述第一面111a上，且与所述发光部112对应，所述反射透镜113用于反射所述发光部112的光线，量子点薄膜114设置在所述反射透镜113远离所述背板111的一侧，封装边框115所述封装边框115将背板111、发光部112、反射透镜113以及量子点薄膜114封装在封装边框115内。\n\n[0032]需要说明的是，第一面111a可以为背板111的上表面，第一面111a可以为背板111的下表面。当然，第一面111a也可以为背板111的下表面，第一面111a可以为背板111的上表面。本申请实施例中不做特殊说明的情况下，默认为第一面111a为背板111的上表面，第二面111b为背板111的下表面。\n\n[0033]其中，背光单元11可以包括两个、三个、四个、十个、一百个等。本申请实施例中对背光模组10中包括的背光单元11的数量不做限定。其中背光单元11可以可以呈矩阵排列。\n\n[0034]其中，背板111为漫反射背板111，也就是背板111的第一面111a为粗糙面，当光线发射到第一面111a时，背板111能够将光散射到四面八方。\n\n[0035]另外的，发光部112为光源，发光部112发出的光源通过反射透镜113反射到量子点薄膜114。其中，反射透镜113可以完全接受发光部112的光源且全部反射到量子点薄膜114。量子点薄膜114可以精确高效地转换发光部112发射的光线。\n\n[0036]其中，封装边框115与背板111固定连接从而将背板111、发光部112、反射透镜113以及量子点薄膜114封装在封装边框115内。具体的，封装边框115可以与背板111螺纹连接或者胶水黏贴固定。\n\n[0037]其中，所述背光单元11还包括第一增亮膜116，所述第一增亮膜116设置在所述量子点薄膜114远离所述背板111的一侧。通过第一增亮膜116可以汇聚从量子点薄膜114透射的光线，从而起到一个聚光增亮的效果。\n\n[0038]其中，所述背光单元11还包括电路板117，所述电路板117设置在所述背板111的第一面111a，所述电路板117用于与驱动电源连接。电路板117可以与发光部112的芯片连接，驱动电源与电路板117连接，这样驱动电源可以控制发光部112的打开或者关闭。\n\n[0039]其中，所述反射透镜113远离所述背板111的一侧为棱柱微结构1131，所述反射透镜113靠近所述背板111的一侧为半球形结构1132。通过这种结构可以接受发光部112全部光线，提高光源的有效使用效率，节省资源。\n\n[0040]其中，所述半球形结构1132的靠近所述背板111的端部设有一缺口118，所述缺口118与所述发光部112对应。这样进一步的保证反射透镜113能够接受发光部112全部光线，提高光源的有效使用效率，节省资源。\n\n[0041]其中，所述反射透镜113的材料为聚甲基丙烯酸甲酯。这种材料为透明有机材料。能够更好的起到聚光的效果。\n\n[0042]其中，所述量子点薄膜114为三基色或二基色量子点材料的混合薄膜。三基色和二基色量子点材料在相关资料已经记载，本申请实施例中，对三基色和二基色量子点材料不做过多赘述。\n\n[0043]其中，所述发光部112为蓝光的液晶发光二极管。蓝色的液晶发光二极管发出的光线为蓝色。\n\n[0044]其中，所述背板111模组还包括第二增亮膜12，所述第二增亮膜12设置在所述背光单元11上。进一步减小出射光线的角度，起到提高光效的效果。\n\n[0045]本申请实施例所提供的背光模组10包括若干背光单元11，所述背光单元11包括背板111、发光部112、反射透镜113、量子点薄膜114以及封装边框115，背板111具有相对设置的第一面111a和第二面111b，发光部112设置在所述第一面111a，反射透镜113设置在所述第一面111a上，且与所述发光部112对应，所述反射透镜113用于反射所述发光部112的光线，量子点薄膜114设置在所述反射透镜113远离所述背板111的一侧，封装边框115所述封装边框115将背板111、发光部112、反射透镜113以及量子点薄膜114封装在封装边框115内。本申请将背光模组10形成多个独立背光单元11，每一个独立的背光单元11可以形成背光源，通过独立的控制背光单元11，消除相邻单元之间的背光串扰，提高对比度及显示均匀性。\n\n[0046]请参阅图4，图4为本申请实施例提供的显示装置的结构示意图。本申请实施例还一种显示装置100，包括背光模组10和显示面板20，所述背光模组10为以上所述的背光模组10。具体请参考上述实施例。由于背光模组10已经在上述实施例中了详细的描述。本申请实施例中对于背光模组10不做过多赘述。\n\n[0047]由于本申请显示装置100采用上述背光模组10，因此，每一个独立的背光单元11可以形成背光源，通过独立的控制背光单元11，消除相邻单元之间的背光串扰，提高对比度及显示均匀性。\n\n[0048]以上对本申请实施例提供的背光模组及显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种背光模组及显示装置。\n\n背景技术\n\n[0002]背光源作为提升LCD(Liquid Crystal Display、液晶显示器)显示器色彩及亮度的关键模块，目前将量子点背光源加LCD显示屏的电视称为量子点电视，相比普通LCD电视，其具有高对比度，色域广，色饱和度、色纯度高等优异的特点，传统的量子点电视为蓝光LED背光源激发量子点薄膜发出白光作为量子点背光源，其光学结构可以为直下式结构也可以为侧入式结构，由于本质上量子点电视依然是被动发光的显示器，因此同样存在对比度不高的问题，更进一步的，由于相比普通背光源多了一层量子点膜，若采用传统的直下式动态背光方式，存在以下问题\n\n[0003]由于光对整个量子点膜都有激发作用，因此控制局部LED亮灭都会造成整张膜产生不均匀的照明效果，进而使得相邻单元之间产生更加严重的亮度串扰影响显示效果。\n\n发明内容\n\n[0004]本申请实施例提供一种背光模组及显示装置，可以避免相邻背光单元之间产生亮度串扰，从而提高显示效果。\n\n[0005]本申请提供一种背光模组，包括若干背光单元，所述背光单元包括：\n\n[0006]背板，具有相对设置的第一面和第二面；\n\n[0007]发光部，设置在所述第一面；\n\n[0008]反射透镜，设置在所述第一面上，且与所述发光部对应，所述反射透镜用于反射所述发光部的光线；\n\n[0009]量子点薄膜，设置在所述反射透镜远离所述背板的一侧；\n\n[0010]封装边框，所述封装边框将背板、发光部、反射透镜以及量子点薄膜封装在封装边框内。\n\n[0011]在一些实施例中，所述背光单元还包括第一增亮膜，所述第一增亮膜设置在所述量子点薄膜远离所述背板的一侧。\n\n[0012]在一些实施例中，所述背光单元还包括电路板，所述电路板设置在所述背板的第一面，所述电路板用于与驱动电源连接。\n\n[0013]在一些实施例中，所述反射透镜远离所述背板的一侧为棱柱微结构，所述反射透镜靠近所述背板的一侧为半球形结构。\n\n[0014]在一些实施例中，所述半球形结构的靠近所述背板的端部设有一缺口，所述缺口与所述发光部对应。\n\n[0015]在一些实施例中，所述反射透镜的材料为聚甲基丙烯酸甲酯。\n\n[0016]在一些实施例中，所述量子点薄膜为三基色或二基色量子点材料的混合薄膜。\n\n[0017]在一些实施例中，所述发光部为蓝光的液晶发光二极管。\n\n[0018]在一些实施例中，所述背板模组还包括第二增亮膜，所述第二增亮膜设置在所述背光单元上。\n\n[0019]本申请实施例还一种显示装置，包括背光模组，所述背光模组为以上所述的背光模组。\n\n[0020]在一些实施例中，所述封胶层位于所述通孔的孔壁与所述透光区域之间。\n\n[0021]本申请实施例所提供的背光模组包括若干背光单元，所述背光单元包括背板、发光部、反射透镜、量子点薄膜以及封装边框，背板具有相对设置的第一面和第二面，发光部设置在所述第一面，反射透镜设置在所述第一面上，且与所述发光部对应，所述反射透镜用于反射所述发光部的光线，量子点薄膜设置在所述反射透镜远离所述背板的一侧，封装边框所述封装边框将背板、发光部、反射透镜以及量子点薄膜封装在封装边框内。本申请将背光模组形成多个独立背光单元，每一个独立的背光单元可以形成背光源，通过独立的控制背光单元，消除相邻单元之间的背光串扰，提高对比度及显示均匀性。\n\n附图说明\n\n[0022]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0023]图1为本申请实施例提供的背光模组的结构示意图。\n\n[0024]图2为本申请实施例提供的背光模组另一个的结构示意图。\n\n[0025]图3为本申请实施例提供的背光单元的结构示意图。\n\n[0026]图4为本申请实施例提供的显示面板的结构示意图。\n\n具体实施方式\n\n[0027]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0028]需要说明的是，在本申请的描述中，需要理解的是，术语“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。\n\n[0029]本申请实施例提供一种背光单元和显示装置，以下对背光单元做详细介绍。\n\n[0030]请参阅图1至图3，图1为本申请实施例提供的背光模组的结构示意图。图2为本申请实施例提供的背光模组另一个的结构示意图。图3为本申请实施例提供的背光单元的结构示意图。\n\n[0031]其中，本申请实施例提供的背光模组10包括若干背光单元11，所述背光单元11包括背板111、发光部112、反射透镜113、量子点薄膜114以及封装边框115，背板111具有相对设置的第一面111a和第二面111b，发光部112设置在所述第一面111a，反射透镜113设置在所述第一面111a上，且与所述发光部112对应，所述反射透镜113用于反射所述发光部112的光线，量子点薄膜114设置在所述反射透镜113远离所述背板111的一侧，封装边框115所述封装边框115将背板111、发光部112、反射透镜113以及量子点薄膜114封装在封装边框115内。\n\n[0032]需要说明的是，第一面111a可以为背板111的上表面，第一面111a可以为背板111的下表面。当然，第一面111a也可以为背板111的下表面，第一面111a可以为背板111的上表面。本申请实施例中不做特殊说明的情况下，默认为第一面111a为背板111的上表面，第二面111b为背板111的下表面。\n\n[0033]其中，背光单元11可以包括两个、三个、四个、十个、一百个等。本申请实施例中对背光模组10中包括的背光单元11的数量不做限定。其中背光单元11可以可以呈矩阵排列。\n\n[0034]其中，背板111为漫反射背板111，也就是背板111的第一面111a为粗糙面，当光线发射到第一面111a时，背板111能够将光散射到四面八方。\n\n[0035]另外的，发光部112为光源，发光部112发出的光源通过反射透镜113反射到量子点薄膜114。其中，反射透镜113可以完全接受发光部112的光源且全部反射到量子点薄膜114。量子点薄膜114可以精确高效地转换发光部112发射的光线。\n\n[0036]其中，封装边框115与背板111固定连接从而将背板111、发光部112、反射透镜113以及量子点薄膜114封装在封装边框115内。具体的，封装边框115可以与背板111螺纹连接或者胶水黏贴固定。\n\n[0037]其中，所述背光单元11还包括第一增亮膜116，所述第一增亮膜116设置在所述量子点薄膜114远离所述背板111的一侧。通过第一增亮膜116可以汇聚从量子点薄膜114透射的光线，从而起到一个聚光增亮的效果。\n\n[0038]其中，所述背光单元11还包括电路板117，所述电路板117设置在所述背板111的第一面111a，所述电路板117用于与驱动电源连接。电路板117可以与发光部112的芯片连接，驱动电源与电路板117连接，这样驱动电源可以控制发光部112的打开或者关闭。\n\n[0039]其中，所述反射透镜113远离所述背板111的一侧为棱柱微结构1131，所述反射透镜113靠近所述背板111的一侧为半球形结构1132。通过这种结构可以接受发光部112全部光线，提高光源的有效使用效率，节省资源。\n\n[0040]其中，所述半球形结构1132的靠近所述背板111的端部设有一缺口118，所述缺口118与所述发光部112对应。这样进一步的保证反射透镜113能够接受发光部112全部光线，提高光源的有效使用效率，节省资源。\n\n[0041]其中，所述反射透镜113的材料为聚甲基丙烯酸甲酯。这种材料为透明有机材料。能够更好的起到聚光的效果。\n\n[0042]其中，所述量子点薄膜114为三基色或二基色量子点材料的混合薄膜。三基色和二基色量子点材料在相关资料已经记载，本申请实施例中，对三基色和二基色量子点材料不做过多赘述。\n\n[0043]其中，所述发光部112为蓝光的液晶发光二极管。蓝色的液晶发光二极管发出的光线为蓝色。\n\n[0044]其中，所述背板111模组还包括第二增亮膜12，所述第二增亮膜12设置在所述背光单元11上。进一步减小出射光线的角度，起到提高光效的效果。\n\n[0045]本申请实施例所提供的背光模组10包括若干背光单元11，所述背光单元11包括背板111、发光部112、反射透镜113、量子点薄膜114以及封装边框115，背板111具有相对设置的第一面111a和第二面111b，发光部112设置在所述第一面111a，反射透镜113设置在所述第一面111a上，且与所述发光部112对应，所述反射透镜113用于反射所述发光部112的光线，量子点薄膜114设置在所述反射透镜113远离所述背板111的一侧，封装边框115所述封装边框115将背板111、发光部112、反射透镜113以及量子点薄膜114封装在封装边框115内。本申请将背光模组10形成多个独立背光单元11，每一个独立的背光单元11可以形成背光源，通过独立的控制背光单元11，消除相邻单元之间的背光串扰，提高对比度及显示均匀性。\n\n[0046]请参阅图4，图4为本申请实施例提供的显示装置的结构示意图。本申请实施例还一种显示装置100，包括背光模组10和显示面板20，所述背光模组10为以上所述的背光模组10。具体请参考上述实施例。由于背光模组10已经在上述实施例中了详细的描述。本申请实施例中对于背光模组10不做过多赘述。\n\n[0047]由于本申请显示装置100采用上述背光模组10，因此，每一个独立的背光单元11可以形成背光源，通过独立的控制背光单元11，消除相邻单元之间的背光串扰，提高对比度及显示均匀性。\n\n[0048]以上对本申请实施例提供的背光模组及显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10773, 23827, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种LED芯片转移系统及LED芯片的转移方法。\n\n背景技术\n\n[0002]目前，在Micro LED(Micro Light Emitting Display，微型发光二极管)显示领域，为了制作发光二极管显示器，需要将微小的发光二极管从原始衬底转移到接收基板上排列成阵列，因此涉及到巨量且微小的发光二级管器件的转移问题。\n\n[0003]然而，在目前的Micro LED芯片巨量转移技术中，转移精度较低，因此，如何实现Micro LED芯片的高效和精确转移成为亟待解决的技术问题。\n\n发明内容\n\n[0004]本申请提供一种LED芯片转移系统及LED芯片的转移方法，以实现Micro LED芯片的高效和精确转移。\n\n[0005]本申请提供一种LED芯片转移系统，其包括：\n\n[0006]载台，所述载台用于放置待转移的LED芯片；\n\n[0007]转移机构，所述转移机构设置在所述载台上，所述转移机构包括基板和多个设置在所述基板上的转移部件，所述转移部件用于转移所述LED芯片；以及\n\n[0008]喷涂机构，所述喷涂机构用于对所述LED芯片喷涂粘性液；\n\n[0009]其中，所述转移部件包括转移本体和吸附结构，所述转移本体设置在所述基板上，所述吸附结构设置在所述转移本体上，且用于吸附所述粘性液。\n\n[0010]在本申请的LED芯片转移系统中，所述吸附结构包括至少一吸附部，所述吸附部设置在所述转移本体朝向所述载台的一侧，所述吸附部上设置有多个凹槽。\n\n[0011]在本申请的LED芯片转移系统中，所述转移本体上设置有通气通道，所述通气通道的出气口朝向所述LED芯片；\n\n[0012]所述LED芯片转移系统还包括通气机构，所述通气机构的出气口连通于所述通气通道的进气口。\n\n[0013]在本申请的LED芯片转移系统中，所述吸附部的数量为一个，所述吸附部上设置有至少一通孔，所述通孔连通于所述通气通道。\n\n[0014]在本申请的LED芯片转移系统中，所述吸附部的数量为多个，且所述吸附部与所述通气通道相错设置。\n\n[0015]在本申请的LED芯片转移系统中，所述凹槽的截面形状为半圆弧形、三角形、方形或梯形。\n\n[0016]在本申请的LED芯片转移系统中，所述吸附结构的材料的极性与所述粘性液的极性相似。\n\n[0017]在本申请的LED芯片转移系统中，所述LED芯片为Mini LED芯片或Micro LED芯片。\n\n[0018]本申请还提供一种LED芯片的转移方法，其包括以下步骤：\n\n[0019]提供一LED芯片转移系统，所述LED芯片转移系统包括载台、转移机构和喷涂机构，所述转移机构包括基板和多个设置在所述基板上的转移部件，所述转移部件包括转移本体和设置在所述转移本体上的吸附结构；\n\n[0020]将多个待转移的LED芯片置于所述载台上；\n\n[0021]采用所述喷涂机构在所述LED芯片上喷涂粘性液，以使所述粘性液粘结在所述LED芯片上；\n\n[0022]采用所述转移机构的所述吸附结构吸附所述粘性液；\n\n[0023]提供一驱动基板；\n\n[0024]采用所述转移机构将所述LED芯片转移并固定连接至所述驱动基板上。\n\n[0025]在本申请的LED芯片转移方法中，所述吸附结构包括至少一吸附部，所述吸附部设置在所述转移本体朝向所述载台的一侧，且所述吸附部上设置有多个凹槽；其中，所述采用所述转移机构的所述吸附结构吸附所述粘性液的步骤，包括：\n\n[0026]将所述转移部件与粘结在所述LED芯片上的所述粘性液接触；\n\n[0027]所述吸附部上的凹槽通过表面张力作用吸附所述粘性液，以使所述LED芯片固定连接至所述转移部件。\n\n[0028]相较于现有技术中的LED芯片转移系统，本申请提供的LED芯片转移系统通过在转移部件上设置吸附结构，并在LED芯片上形成粘性液，通过吸附结构的表面张力作用吸附粘性液，以使LED芯片从载台上脱离，进而实现了Micro LED芯片的高效和精确转移。\n\n附图说明\n\n[0029]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0030]图1是本申请实施例提供的LED芯片转移系统的结构示意图；\n\n[0031]图2是本申请实施例提供的LED芯片转移系统中转移机构和通气机构的结构示意图；\n\n[0032]图3是本申请实施例提供的LED芯片转移系统中转移部件的第一结构示意图；\n\n[0033]图4是图3中沿PP’线处的剖面结构示意图；\n\n[0034]图5是本申请实施例提供的LED芯片转移系统中转移部件的第二结构示意图；\n\n[0035]图6是图5中沿QQ’线处的剖面结构示意图；\n\n[0036]图7是本申请实施例提供的LED芯片的转移方法的流程示意图；\n\n[0037]图8是本申请实施例提供的LED芯片的转移方法中所用LED芯片转移系统的结构示意图；\n\n[0038]图9是图8中转移机构和通气机构的结构示意图；\n\n[0039]图10A至10F是本申请实施例提供的LED芯片的转移方法中步骤S201至S207依次得到的结构示意图。\n\n具体实施方式\n\n[0040]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0041]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0042]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0043]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0044]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0045]需要说明的是，本申请中基板上转移部件的数量为多个，本申请实施例仅以转移部件的数量为三个为例进行说明，但并不限于此。\n\n[0046]另外，本申请中的载台、转移机构、喷涂机构、通气机构和滑动机构可以形成一个共同协作的装置，也可以各自独立或自由组合形成不同的装置进行协作作业，本申请实施例仅以载台、转移机构、喷涂机构、通气机构和滑动机构形成一个共同协作的装置为例进行说明，但并不限于此。\n\n[0047]请参阅图1和图2，图1为本申请实施例提供的LED芯片转移系统的结构示意图，图2为本申请实施例提供的LED芯片转移系统中转移机构和通气机构的结构示意图。\n\n[0048]本申请实施例提供的LED芯片转移系统100包括载台10、转移机构11、喷涂机构12、通气机构13和滑动机构14。载台10用于放置待转移的LED芯片15。转移机构11设置在载台10上。转移机构11包括基板111和多个设置在基板111上的转移部件112。转移部件112用于转移LED芯片15。喷涂机构12设置在滑动机构14上。喷涂机构12用于对LED芯片15喷涂粘性液15A。其中，转移部件112包括转移本体1121和吸附结构1122。转移本体1121设置在基板111上。吸附结构1122设置在转移本体1121上。吸附结构1122用于吸附粘性液15A。\n\n[0049]由此，本申请实施例提供的LED芯片转移系统100通过在转移部件112上设置吸附结构1122，并在LED芯片15上形成粘性液15A，通过吸附结构1122的表面张力作用吸附粘性液15A，进而实现了LED芯片15的高效和精确转移。\n\n[0050]具体的，载台10可以为玻璃基板，也可以为其他承载LED芯片15的承载装置，本申请对此不作限定。\n\n[0051]在本申请实施例中，滑动机构14包括滑轨141以及与滑轨141滑动连接的固定板142。滑轨141设置在载台10和转移机构11的外侧。固定板142设置在载台10和转移机构11之间。\n\n[0052]进一步的，喷涂机构12包括多个喷头121。喷头121与LED芯片15一一对应设置，且位于固定板142朝向载台10的一侧。其中，喷头121与固定板142之间可以为固定连接，也可以为活动连接，本申请对此不作限定。\n\n[0053]可以理解的是，喷涂机构12还可以包括控制喷头121喷涂粘性液15A的控制装置(图中未示出)，在此不再赘述。\n\n[0054]在本申请实施例中，粘性液15A为氟化物类液晶材料，如二氟化物或三氟化物等。在一些实施例中，粘性液15A还可以为其他粘性材料，在此不再赘述。\n\n[0055]可以理解的是，当对LED芯片15喷涂粘性液15A时，固定板142上的多个喷头121将粘性液15A喷涂至对应的LED芯片15上，以使LED芯片15与粘性液15A粘结。\n\n[0056]进一步的，本申请实施例通过将喷涂机构12设置在滑动机构14上，还可以通过控制固定板142在滑轨141上的上下移动，进而控制喷头121与LED芯片15之间的距离，从而可以有效控制粘性液15A的喷涂面积。\n\n[0057]在本申请实施例中，吸附结构1122设置在转移本体1121朝向载台10的一侧上。在LED芯片15的转移过程中，通过将转移机构11靠近载台10，进而使得吸附结构1122通过表面张力作用吸附LED芯片15上的粘性液15A，以使LED芯片15从载台10上脱离。\n\n[0058]在一些实施例中，转移本体1121朝向载台10的一侧设置有放置槽，吸附结构1122设置放置槽内，该设置可以节省转移本体1121上的空间。\n\n[0059]进一步的，吸附结构1122的材料的极性与粘性液15A的极性相似。\n\n[0060]具体的，吸附结构1122的材料可以为聚氯乙烯或聚四氟乙烯等。该设置通过使用相似极性的吸附结构1122材料和粘性液15A材料，可以进一步提高吸附结构1122的吸附作用，从而进一步提高了LED芯片15的转移效率。\n\n[0061]在本申请实施例中，转移本体1121上设置有通气通道11A。通气通道11A的出气口朝向LED芯片15。通气机构13的出气口连通于通气通道11A的进气口。该设置通过利用通气机构13对通气通道11A通入气流，可以实现LED芯片15与转移本体1121之间的有效分离。\n\n[0062]需要说明的是，通气机构13可以设置在转移机构11的上方，也可以设置在转移机构11的两侧，还可以设置在LED芯片转移系统100中的其他位置，本申请实施例仅以通气机构13设置在转移机构11的上方为例进行说明，但并不限于此。\n\n[0063]进一步的，基板111上设置有多个通气孔111A，通气孔111A一一对应连通于通气通道11A。通气孔111A的进气口连通于通气机构13的出气口。通气孔111A的出气口连通于通气通道11A的进气口。\n\n[0064]进一步的，本申请中的通气机构13可以为通气泵或其他通气装置，本申请实施例仅以通气机构13为通气泵为例进行说明，但并不限于此。\n\n[0065]具体的，通气泵包括多个通气管13A。通气管13A设置在通气泵朝向基板111的一侧上。通气管13A与通气孔111A连通。通气管13A的出气口连通于通气孔111A的进气口。\n\n[0066]需要说明的是，在本申请实施例中，通气机构13的具体尺寸、通气管13A的形状以及尺寸均为示例，但不能理解为对本申请的限制。\n\n[0067]上述设置通过在转移本体1121上设置通气通道11A，并在基板111上设置与通气通道11A对应的通气孔111A，通过采用通气机构13对通气孔111A通入气流，使得气体通过通气孔111A流入通气通道11A，进而对转移本体1121上的吸附结构1122产生冲击作用，从而使得粘附在转移本体1121的LED芯片15从吸附结构1122上脱离，以此完成LED芯片15的转移。进一步的，上述设置还可以通过控制通气机构13中的通气流量来控制LED芯片15的脱离速度，进而控制LED芯片15的转移速率。\n\n[0068]需要说明的是，本申请中通气通道11A的具体数目和排列方式可以根据LED芯片15的大小进行调整，本实施例不能理解为对本申请的限制。\n\n[0069]在本申请实施例中，吸附结构1122包括至少一吸附部112A。吸附部112A设置在转移本体1121朝向载台10的一侧。吸附部112A上设置有多个凹槽16。\n\n[0070]上述设置通过在吸附部112A上设置凹槽16，通过凹槽16的表面张力作用吸附LED芯片15上的粘性液15A，进而使得粘性液15A均匀分布于凹槽16内，从而增加了LED芯片15与转移本体1121的有效接触面积，提高了LED芯片15转移的高效性。此外，通过凹槽16的毛细作用可以进一步增加凹槽16对粘性液15A的吸附作用力，从而进一步提高凹槽16与粘性液15A的粘附效果。\n\n[0071]可选的，凹槽16的截面形状为半圆弧形、三角形、方形或梯形。在本申请实施例中，凹槽16的截面形状为半圆弧形。\n\n[0072]需要说明的是，本申请中通气通道11A的流通截面形状可以为圆形或方形等，本申请实施例仅以通气通道11A的流通截面形状为圆形为例进行说明，但并不限于此。\n\n[0073]请一并参阅图1至图4，其中，图3为本申请实施例提供的LED芯片转移系统中转移部件的第一结构示意图，图4为图3中沿PP’线处的剖面结构示意图。\n\n[0074]如图3和图4所示，在本申请实施例中，吸附部112A的数量为一个。吸附部112A上设置有至少一通孔11B。通孔11B连通于通气通道11A。\n\n[0075]进一步的，通孔11B与通气通道11A同轴设置。通孔11B的孔径大于通气通道11A的孔径。当通气通道11A中的气体流经吸附部112A上的通孔11B时，上述设置可以防止因气体流速过大而对吸附部112A产生较大的冲击力，避免产生部分LED芯片15从转移本体1121上脱离的现象，进而可以提高LED芯片15的转移效率。此外，该设置还可以降低吸附部112A从转移本体1121上的脱离几率，进而提高了转移部件112的使用寿命。\n\n[0076]进一步的，请参阅图5和图6，图5为本申请实施例提供的LED芯片转移系统中转移部件的第二结构示意图，图6为图5中沿QQ’线处的剖面结构示意图。\n\n[0077]如图5和图6所示，本申请实施例中吸附部112A的数量还可以为多个。具体的，吸附部112A之间间隔设置。吸附部112A与通气通道11A相错设置。\n\n[0078]需要说明的是，当吸附结构1122上的吸附部112A为多个时，不同吸附部112A上的凹槽16数量可以相同，也可以不同，本申请对此不作限定。\n\n[0079]可选的，本申请中的LED芯片15可以为Mini LED芯片或Micro LED芯片。其中，该Mini LED芯片的尺寸在100～200微米之间，MicroLED芯片的尺寸在100微米以下。Mini LED芯片及MicroLED芯片的尺寸还可以根据实际情况进行选择，本申请对此不作限定。\n\n[0080]本申请实施例提供的LED芯片转移系统100通过在转移部件112上设置吸附结构1122，并在LED芯片15上形成粘性液15A，通过吸附结构1122的表面张力作用吸附粘性液15A，以使LED芯片15从载台10上脱离，进而可以实现巨量LED芯片15的高效和精确转移。\n\n[0081]请参阅图7，图7为本申请实施例提供的LED芯片的转移方法的流程示意图。\n\n[0082]本申请提供一种LED芯片的转移方法，其包括以下步骤：\n\n[0083]步骤S201：提供一LED芯片转移系统，所述LED芯片转移系统包括载台、转移机构和喷涂机构，所述转移机构包括基板和多个设置在所述基板上的转移部件，所述转移部件包括转移本体和设置在所述转移本体上的吸附结构；\n\n[0084]步骤S202：将多个待转移的LED芯片置于所述载台上；\n\n[0085]步骤S203：采用所述喷涂机构在所述LED芯片上喷涂粘性液，以使所述粘性液粘结在所述LED芯片上；\n\n[0086]步骤S204：采用所述转移机构的所述吸附结构吸附所述粘性液；\n\n[0087]步骤S205：提供一驱动基板；\n\n[0088]步骤S206：采用所述转移机构将所述LED芯片转移并固定连接至所述驱动基板上；\n\n[0089]步骤S207：采用通气机构对所述转移本体上的通气通道通气，以使所述LED芯片从所述转移本体上脱离。\n\n[0090]下面对本申请实施例的LED芯片的转移方法进行详细的阐述。\n\n[0091]请一并参阅图8、图9以及图10A至10F，其中，图8为本申请实施例提供的LED芯片的转移方法中所用LED芯片转移系统的结构示意图，图9为图8中转移机构和通气机构的结构示意图，图10A至图10F为本申请实施例提供的LED芯片的转移方法中步骤S201至S207依次得到的结构示意图。\n\n[0092]步骤S201：提供一LED芯片转移系统200。\n\n[0093]如图8所示，LED芯片转移系统200包括载台20、转移机构21、喷涂机构22、通气机构23和滑动机构24。转移机构21包括基板211和多个设置在基板211上的转移部件212。转移部件212包括转移本体2121和设置在转移本体2121上的吸附结构2122。喷涂机构22设置在滑动机构24上。其中，LED芯片转移系统200的结构与上述实施例中的LED芯片转移系统100的结构相同。随后转入步骤S202。\n\n[0094]步骤S202：将多个待转移的LED芯片25置于载台20上。\n\n[0095]请参阅图10A。其中，载台20为玻璃基板或其他承载LED芯片25的承载装置。\n\n[0096]具体的，采用静电吸附作用将多个待转移的LED芯片25从原始基板上剥离，然后转移至载台20上。随后转入步骤S203。\n\n[0097]步骤S203：采用喷涂机构22在LED芯片25上喷涂粘性液25A，以使粘性液25A粘结在LED芯片25上。\n\n[0098]请参阅图10B。其中，喷涂机构22包括多个喷头221，喷头221与LED芯片25一一对应设置。\n\n[0099]具体的，可以采用喷墨打印技术将喷头中的粘性液25A喷至对应的LED芯片25上，进而使得LED芯片25与粘性液25A粘结。其中，粘性液25A的涂覆面积可以根据LED芯片25的尺寸进行设定，本申请对此不作限定。\n\n[0100]进一步的，粘性液25A的材料可以为氟化物类液晶材料，如二氟化物或三氟化物等。随后转入步骤S204。\n\n[0101]步骤S204：采用转移机构21的吸附结构2122吸附粘性液25A。\n\n[0102]请继续参阅图8和图9。在本申请实施例中，吸附结构2122包括至少一吸附部212A。吸附部212A设置在转移本体2121朝向载台20的一侧，且吸附部212A上设置有多个凹槽26。\n\n[0103]具体的，步骤S204包括以下步骤：\n\n[0104]步骤S2041：将转移部件212与粘结在LED芯片25上的粘性液25A接触。\n\n[0105]步骤S2042：吸附部212A的凹槽26通过表面张力作用吸附粘性液25A，以使LED芯片25固定连接至转移部件212，如图10C所示。\n\n[0106]进一步的，凹槽16的截面形状为半圆弧形、三角形、方形或梯形。在本申请实施例中，凹槽16的截面形状为半圆弧形。\n\n[0107]在本申请实施例中，采用湿法刻蚀工艺形成凹槽26。首先，在转移本体2121朝向载台20的一侧上形成一层吸附结构2122，然后采用湿法刻蚀工艺对吸附结构2122进行刻蚀，以形成多个吸附部212A。接着，通过对吸附部212A进行刻蚀处理以形成凹槽26。\n\n[0108]在一些实施例中，还可以采用干法刻蚀工艺对吸附部212A进行刻蚀处理，以形成凹槽26，在此不再赘述。随后转入步骤S205。\n\n[0109]步骤S205：提供一驱动基板27。\n\n[0110]请参阅图10D。该驱动基板27为驱动电路板。驱动基板27上设置有多个焊膏27A。焊膏27A与粘附在转移机构21上的LED芯片25对应设置。\n\n[0111]具体的，焊膏27A为具有粘结作用的共晶膏。每一LED芯片25对应位置处的焊膏27A数量可以为一个、两个或者多个，本实施例仅以每一LED芯片25对应位置处的焊膏27A数量为两个为例进行说明，但并不限于此。随后转入步骤S206。\n\n[0112]步骤S206：采用转移机构21将LED芯片25转移并固定连接至驱动基板27上。\n\n[0113]请参阅10E。具体的，首先在超声波作用下对驱动基板27上的焊膏27A进行加热。\n\n[0114]接着，当驱动基板27上的焊膏27A融化之后，将转移机构21与驱动基板27上的焊膏27A接触，转移机构21上的LED芯片25与焊膏27A粘结，进而使得LED芯片25固定连接至驱动基板27上。随后转入步骤S207。\n\n[0115]步骤S207：采用通气机构23对转移本体2121上的通气通道21A通气，以使LED芯片25从转移本体2121上脱离。\n\n[0116]请继续参阅图8和图9。其中，转移本体2121上设置有通气通道21A。通气通道21A的出气口朝向LED芯片25。通气机构23的出气口连通于通气通道21A的进气口。进一步的，基板211上设置有多个通气孔211A，通气孔211A一一对应连通于通气通道21A。通气孔211A的进气口连通于通气机构23的出气口。通气孔211A的出气口连通于通气通道21A的进气口。\n\n[0117]在本申请实施例中，通气机构23为通气泵，通气泵通过通气管23A与通气孔211A连通。通气管23A的出气口连通于通气孔211A的进气口。\n\n[0118]具体的，在通气泵的作用下向通气通道21A通气，进而使得LED芯片25从转移本体2121上脱离。\n\n[0119]进一步的，在本申请实施例中，在LED芯片25从转移本体2121上脱离之后，还包括：采用溶剂将LED芯片25上残留的粘性液25A洗去，具体溶剂的类型可以根据粘性液25A的极性进行选择，在此不再赘述。\n\n[0120]这样便完成了本申请实施例的LED芯片的转移方法。\n\n[0121]相较于现有技术中的LED芯片转移系统，本申请提供的LED芯片转移系统通过在转移部件上设置吸附结构，并在LED芯片上形成粘性液，通过吸附结构的表面张力作用吸附粘性液，以使LED芯片从载台上脱离，进而实现了LED芯片的高效和精确转移。\n\n[0122]以上对本申请实施方式提供了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施方式的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种LED芯片转移系统及LED芯片的转移方法。\n\n背景技术\n\n[0002]目前，在Micro LED(Micro Light Emitting Display，微型发光二极管)显示领域，为了制作发光二极管显示器，需要将微小的发光二极管从原始衬底转移到接收基板上排列成阵列，因此涉及到巨量且微小的发光二级管器件的转移问题。\n\n[0003]然而，在目前的Micro LED芯片巨量转移技术中，转移精度较低，因此，如何实现Micro LED芯片的高效和精确转移成为亟待解决的技术问题。\n\n发明内容\n\n[0004]本申请提供一种LED芯片转移系统及LED芯片的转移方法，以实现Micro LED芯片的高效和精确转移。\n\n[0005]本申请提供一种LED芯片转移系统，其包括：\n\n[0006]载台，所述载台用于放置待转移的LED芯片；\n\n[0007]转移机构，所述转移机构设置在所述载台上，所述转移机构包括基板和多个设置在所述基板上的转移部件，所述转移部件用于转移所述LED芯片；以及\n\n[0008]喷涂机构，所述喷涂机构用于对所述LED芯片喷涂粘性液；\n\n[0009]其中，所述转移部件包括转移本体和吸附结构，所述转移本体设置在所述基板上，所述吸附结构设置在所述转移本体上，且用于吸附所述粘性液。\n\n[0010]在本申请的LED芯片转移系统中，所述吸附结构包括至少一吸附部，所述吸附部设置在所述转移本体朝向所述载台的一侧，所述吸附部上设置有多个凹槽。\n\n[0011]在本申请的LED芯片转移系统中，所述转移本体上设置有通气通道，所述通气通道的出气口朝向所述LED芯片；\n\n[0012]所述LED芯片转移系统还包括通气机构，所述通气机构的出气口连通于所述通气通道的进气口。\n\n[0013]在本申请的LED芯片转移系统中，所述吸附部的数量为一个，所述吸附部上设置有至少一通孔，所述通孔连通于所述通气通道。\n\n[0014]在本申请的LED芯片转移系统中，所述吸附部的数量为多个，且所述吸附部与所述通气通道相错设置。\n\n[0015]在本申请的LED芯片转移系统中，所述凹槽的截面形状为半圆弧形、三角形、方形或梯形。\n\n[0016]在本申请的LED芯片转移系统中，所述吸附结构的材料的极性与所述粘性液的极性相似。\n\n[0017]在本申请的LED芯片转移系统中，所述LED芯片为Mini LED芯片或Micro LED芯片。\n\n[0018]本申请还提供一种LED芯片的转移方法，其包括以下步骤：\n\n[0019]提供一LED芯片转移系统，所述LED芯片转移系统包括载台、转移机构和喷涂机构，所述转移机构包括基板和多个设置在所述基板上的转移部件，所述转移部件包括转移本体和设置在所述转移本体上的吸附结构；\n\n[0020]将多个待转移的LED芯片置于所述载台上；\n\n[0021]采用所述喷涂机构在所述LED芯片上喷涂粘性液，以使所述粘性液粘结在所述LED芯片上；\n\n[0022]采用所述转移机构的所述吸附结构吸附所述粘性液；\n\n[0023]提供一驱动基板；\n\n[0024]采用所述转移机构将所述LED芯片转移并固定连接至所述驱动基板上。\n\n[0025]在本申请的LED芯片转移方法中，所述吸附结构包括至少一吸附部，所述吸附部设置在所述转移本体朝向所述载台的一侧，且所述吸附部上设置有多个凹槽；其中，所述采用所述转移机构的所述吸附结构吸附所述粘性液的步骤，包括：\n\n[0026]将所述转移部件与粘结在所述LED芯片上的所述粘性液接触；\n\n[0027]所述吸附部上的凹槽通过表面张力作用吸附所述粘性液，以使所述LED芯片固定连接至所述转移部件。\n\n[0028]相较于现有技术中的LED芯片转移系统，本申请提供的LED芯片转移系统通过在转移部件上设置吸附结构，并在LED芯片上形成粘性液，通过吸附结构的表面张力作用吸附粘性液，以使LED芯片从载台上脱离，进而实现了Micro LED芯片的高效和精确转移。\n\n附图说明\n\n[0029]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0030]图1是本申请实施例提供的LED芯片转移系统的结构示意图；\n\n[0031]图2是本申请实施例提供的LED芯片转移系统中转移机构和通气机构的结构示意图；\n\n[0032]图3是本申请实施例提供的LED芯片转移系统中转移部件的第一结构示意图；\n\n[0033]图4是图3中沿PP’线处的剖面结构示意图；\n\n[0034]图5是本申请实施例提供的LED芯片转移系统中转移部件的第二结构示意图；\n\n[0035]图6是图5中沿QQ’线处的剖面结构示意图；\n\n[0036]图7是本申请实施例提供的LED芯片的转移方法的流程示意图；\n\n[0037]图8是本申请实施例提供的LED芯片的转移方法中所用LED芯片转移系统的结构示意图；\n\n[0038]图9是图8中转移机构和通气机构的结构示意图；\n\n[0039]图10A至10F是本申请实施例提供的LED芯片的转移方法中步骤S201至S207依次得到的结构示意图。\n\n具体实施方式\n\n[0040]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0041]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0042]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0043]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0044]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0045]需要说明的是，本申请中基板上转移部件的数量为多个，本申请实施例仅以转移部件的数量为三个为例进行说明，但并不限于此。\n\n[0046]另外，本申请中的载台、转移机构、喷涂机构、通气机构和滑动机构可以形成一个共同协作的装置，也可以各自独立或自由组合形成不同的装置进行协作作业，本申请实施例仅以载台、转移机构、喷涂机构、通气机构和滑动机构形成一个共同协作的装置为例进行说明，但并不限于此。\n\n[0047]请参阅图1和图2，图1为本申请实施例提供的LED芯片转移系统的结构示意图，图2为本申请实施例提供的LED芯片转移系统中转移机构和通气机构的结构示意图。\n\n[0048]本申请实施例提供的LED芯片转移系统100包括载台10、转移机构11、喷涂机构12、通气机构13和滑动机构14。载台10用于放置待转移的LED芯片15。转移机构11设置在载台10上。转移机构11包括基板111和多个设置在基板111上的转移部件112。转移部件112用于转移LED芯片15。喷涂机构12设置在滑动机构14上。喷涂机构12用于对LED芯片15喷涂粘性液15A。其中，转移部件112包括转移本体1121和吸附结构1122。转移本体1121设置在基板111上。吸附结构1122设置在转移本体1121上。吸附结构1122用于吸附粘性液15A。\n\n[0049]由此，本申请实施例提供的LED芯片转移系统100通过在转移部件112上设置吸附结构1122，并在LED芯片15上形成粘性液15A，通过吸附结构1122的表面张力作用吸附粘性液15A，进而实现了LED芯片15的高效和精确转移。\n\n[0050]具体的，载台10可以为玻璃基板，也可以为其他承载LED芯片15的承载装置，本申请对此不作限定。\n\n[0051]在本申请实施例中，滑动机构14包括滑轨141以及与滑轨141滑动连接的固定板142。滑轨141设置在载台10和转移机构11的外侧。固定板142设置在载台10和转移机构11之间。\n\n[0052]进一步的，喷涂机构12包括多个喷头121。喷头121与LED芯片15一一对应设置，且位于固定板142朝向载台10的一侧。其中，喷头121与固定板142之间可以为固定连接，也可以为活动连接，本申请对此不作限定。\n\n[0053]可以理解的是，喷涂机构12还可以包括控制喷头121喷涂粘性液15A的控制装置(图中未示出)，在此不再赘述。\n\n[0054]在本申请实施例中，粘性液15A为氟化物类液晶材料，如二氟化物或三氟化物等。在一些实施例中，粘性液15A还可以为其他粘性材料，在此不再赘述。\n\n[0055]可以理解的是，当对LED芯片15喷涂粘性液15A时，固定板142上的多个喷头121将粘性液15A喷涂至对应的LED芯片15上，以使LED芯片15与粘性液15A粘结。\n\n[0056]进一步的，本申请实施例通过将喷涂机构12设置在滑动机构14上，还可以通过控制固定板142在滑轨141上的上下移动，进而控制喷头121与LED芯片15之间的距离，从而可以有效控制粘性液15A的喷涂面积。\n\n[0057]在本申请实施例中，吸附结构1122设置在转移本体1121朝向载台10的一侧上。在LED芯片15的转移过程中，通过将转移机构11靠近载台10，进而使得吸附结构1122通过表面张力作用吸附LED芯片15上的粘性液15A，以使LED芯片15从载台10上脱离。\n\n[0058]在一些实施例中，转移本体1121朝向载台10的一侧设置有放置槽，吸附结构1122设置放置槽内，该设置可以节省转移本体1121上的空间。\n\n[0059]进一步的，吸附结构1122的材料的极性与粘性液15A的极性相似。\n\n[0060]具体的，吸附结构1122的材料可以为聚氯乙烯或聚四氟乙烯等。该设置通过使用相似极性的吸附结构1122材料和粘性液15A材料，可以进一步提高吸附结构1122的吸附作用，从而进一步提高了LED芯片15的转移效率。\n\n[0061]在本申请实施例中，转移本体1121上设置有通气通道11A。通气通道11A的出气口朝向LED芯片15。通气机构13的出气口连通于通气通道11A的进气口。该设置通过利用通气机构13对通气通道11A通入气流，可以实现LED芯片15与转移本体1121之间的有效分离。\n\n[0062]需要说明的是，通气机构13可以设置在转移机构11的上方，也可以设置在转移机构11的两侧，还可以设置在LED芯片转移系统100中的其他位置，本申请实施例仅以通气机构13设置在转移机构11的上方为例进行说明，但并不限于此。\n\n[0063]进一步的，基板111上设置有多个通气孔111A，通气孔111A一一对应连通于通气通道11A。通气孔111A的进气口连通于通气机构13的出气口。通气孔111A的出气口连通于通气通道11A的进气口。\n\n[0064]进一步的，本申请中的通气机构13可以为通气泵或其他通气装置，本申请实施例仅以通气机构13为通气泵为例进行说明，但并不限于此。\n\n[0065]具体的，通气泵包括多个通气管13A。通气管13A设置在通气泵朝向基板111的一侧上。通气管13A与通气孔111A连通。通气管13A的出气口连通于通气孔111A的进气口。\n\n[0066]需要说明的是，在本申请实施例中，通气机构13的具体尺寸、通气管13A的形状以及尺寸均为示例，但不能理解为对本申请的限制。\n\n[0067]上述设置通过在转移本体1121上设置通气通道11A，并在基板111上设置与通气通道11A对应的通气孔111A，通过采用通气机构13对通气孔111A通入气流，使得气体通过通气孔111A流入通气通道11A，进而对转移本体1121上的吸附结构1122产生冲击作用，从而使得粘附在转移本体1121的LED芯片15从吸附结构1122上脱离，以此完成LED芯片15的转移。进一步的，上述设置还可以通过控制通气机构13中的通气流量来控制LED芯片15的脱离速度，进而控制LED芯片15的转移速率。\n\n[0068]需要说明的是，本申请中通气通道11A的具体数目和排列方式可以根据LED芯片15的大小进行调整，本实施例不能理解为对本申请的限制。\n\n[0069]在本申请实施例中，吸附结构1122包括至少一吸附部112A。吸附部112A设置在转移本体1121朝向载台10的一侧。吸附部112A上设置有多个凹槽16。\n\n[0070]上述设置通过在吸附部112A上设置凹槽16，通过凹槽16的表面张力作用吸附LED芯片15上的粘性液15A，进而使得粘性液15A均匀分布于凹槽16内，从而增加了LED芯片15与转移本体1121的有效接触面积，提高了LED芯片15转移的高效性。此外，通过凹槽16的毛细作用可以进一步增加凹槽16对粘性液15A的吸附作用力，从而进一步提高凹槽16与粘性液15A的粘附效果。\n\n[0071]可选的，凹槽16的截面形状为半圆弧形、三角形、方形或梯形。在本申请实施例中，凹槽16的截面形状为半圆弧形。\n\n[0072]需要说明的是，本申请中通气通道11A的流通截面形状可以为圆形或方形等，本申请实施例仅以通气通道11A的流通截面形状为圆形为例进行说明，但并不限于此。\n\n[0073]请一并参阅图1至图4，其中，图3为本申请实施例提供的LED芯片转移系统中转移部件的第一结构示意图，图4为图3中沿PP’线处的剖面结构示意图。\n\n[0074]如图3和图4所示，在本申请实施例中，吸附部112A的数量为一个。吸附部112A上设置有至少一通孔11B。通孔11B连通于通气通道11A。\n\n[0075]进一步的，通孔11B与通气通道11A同轴设置。通孔11B的孔径大于通气通道11A的孔径。当通气通道11A中的气体流经吸附部112A上的通孔11B时，上述设置可以防止因气体流速过大而对吸附部112A产生较大的冲击力，避免产生部分LED芯片15从转移本体1121上脱离的现象，进而可以提高LED芯片15的转移效率。此外，该设置还可以降低吸附部112A从转移本体1121上的脱离几率，进而提高了转移部件112的使用寿命。\n\n[0076]进一步的，请参阅图5和图6，图5为本申请实施例提供的LED芯片转移系统中转移部件的第二结构示意图，图6为图5中沿QQ’线处的剖面结构示意图。\n\n[0077]如图5和图6所示，本申请实施例中吸附部112A的数量还可以为多个。具体的，吸附部112A之间间隔设置。吸附部112A与通气通道11A相错设置。\n\n[0078]需要说明的是，当吸附结构1122上的吸附部112A为多个时，不同吸附部112A上的凹槽16数量可以相同，也可以不同，本申请对此不作限定。\n\n[0079]可选的，本申请中的LED芯片15可以为Mini LED芯片或Micro LED芯片。其中，该Mini LED芯片的尺寸在100～200微米之间，MicroLED芯片的尺寸在100微米以下。Mini LED芯片及MicroLED芯片的尺寸还可以根据实际情况进行选择，本申请对此不作限定。\n\n[0080]本申请实施例提供的LED芯片转移系统100通过在转移部件112上设置吸附结构1122，并在LED芯片15上形成粘性液15A，通过吸附结构1122的表面张力作用吸附粘性液15A，以使LED芯片15从载台10上脱离，进而可以实现巨量LED芯片15的高效和精确转移。\n\n[0081]请参阅图7，图7为本申请实施例提供的LED芯片的转移方法的流程示意图。\n\n[0082]本申请提供一种LED芯片的转移方法，其包括以下步骤：\n\n[0083]步骤S201：提供一LED芯片转移系统，所述LED芯片转移系统包括载台、转移机构和喷涂机构，所述转移机构包括基板和多个设置在所述基板上的转移部件，所述转移部件包括转移本体和设置在所述转移本体上的吸附结构；\n\n[0084]步骤S202：将多个待转移的LED芯片置于所述载台上；\n\n[0085]步骤S203：采用所述喷涂机构在所述LED芯片上喷涂粘性液，以使所述粘性液粘结在所述LED芯片上；\n\n[0086]步骤S204：采用所述转移机构的所述吸附结构吸附所述粘性液；\n\n[0087]步骤S205：提供一驱动基板；\n\n[0088]步骤S206：采用所述转移机构将所述LED芯片转移并固定连接至所述驱动基板上；\n\n[0089]步骤S207：采用通气机构对所述转移本体上的通气通道通气，以使所述LED芯片从所述转移本体上脱离。\n\n[0090]下面对本申请实施例的LED芯片的转移方法进行详细的阐述。\n\n[0091]请一并参阅图8、图9以及图10A至10F，其中，图8为本申请实施例提供的LED芯片的转移方法中所用LED芯片转移系统的结构示意图，图9为图8中转移机构和通气机构的结构示意图，图10A至图10F为本申请实施例提供的LED芯片的转移方法中步骤S201至S207依次得到的结构示意图。\n\n[0092]步骤S201：提供一LED芯片转移系统200。\n\n[0093]如图8所示，LED芯片转移系统200包括载台20、转移机构21、喷涂机构22、通气机构23和滑动机构24。转移机构21包括基板211和多个设置在基板211上的转移部件212。转移部件212包括转移本体2121和设置在转移本体2121上的吸附结构2122。喷涂机构22设置在滑动机构24上。其中，LED芯片转移系统200的结构与上述实施例中的LED芯片转移系统100的结构相同。随后转入步骤S202。\n\n[0094]步骤S202：将多个待转移的LED芯片25置于载台20上。\n\n[0095]请参阅图10A。其中，载台20为玻璃基板或其他承载LED芯片25的承载装置。\n\n[0096]具体的，采用静电吸附作用将多个待转移的LED芯片25从原始基板上剥离，然后转移至载台20上。随后转入步骤S203。\n\n[0097]步骤S203：采用喷涂机构22在LED芯片25上喷涂粘性液25A，以使粘性液25A粘结在LED芯片25上。\n\n[0098]请参阅图10B。其中，喷涂机构22包括多个喷头221，喷头221与LED芯片25一一对应设置。\n\n[0099]具体的，可以采用喷墨打印技术将喷头中的粘性液25A喷至对应的LED芯片25上，进而使得LED芯片25与粘性液25A粘结。其中，粘性液25A的涂覆面积可以根据LED芯片25的尺寸进行设定，本申请对此不作限定。\n\n[0100]进一步的，粘性液25A的材料可以为氟化物类液晶材料，如二氟化物或三氟化物等。随后转入步骤S204。\n\n[0101]步骤S204：采用转移机构21的吸附结构2122吸附粘性液25A。\n\n[0102]请继续参阅图8和图9。在本申请实施例中，吸附结构2122包括至少一吸附部212A。吸附部212A设置在转移本体2121朝向载台20的一侧，且吸附部212A上设置有多个凹槽26。\n\n[0103]具体的，步骤S204包括以下步骤：\n\n[0104]步骤S2041：将转移部件212与粘结在LED芯片25上的粘性液25A接触。\n\n[0105]步骤S2042：吸附部212A的凹槽26通过表面张力作用吸附粘性液25A，以使LED芯片25固定连接至转移部件212，如图10C所示。\n\n[0106]进一步的，凹槽16的截面形状为半圆弧形、三角形、方形或梯形。在本申请实施例中，凹槽16的截面形状为半圆弧形。\n\n[0107]在本申请实施例中，采用湿法刻蚀工艺形成凹槽26。首先，在转移本体2121朝向载台20的一侧上形成一层吸附结构2122，然后采用湿法刻蚀工艺对吸附结构2122进行刻蚀，以形成多个吸附部212A。接着，通过对吸附部212A进行刻蚀处理以形成凹槽26。\n\n[0108]在一些实施例中，还可以采用干法刻蚀工艺对吸附部212A进行刻蚀处理，以形成凹槽26，在此不再赘述。随后转入步骤S205。\n\n[0109]步骤S205：提供一驱动基板27。\n\n[0110]请参阅图10D。该驱动基板27为驱动电路板。驱动基板27上设置有多个焊膏27A。焊膏27A与粘附在转移机构21上的LED芯片25对应设置。\n\n[0111]具体的，焊膏27A为具有粘结作用的共晶膏。每一LED芯片25对应位置处的焊膏27A数量可以为一个、两个或者多个，本实施例仅以每一LED芯片25对应位置处的焊膏27A数量为两个为例进行说明，但并不限于此。随后转入步骤S206。\n\n[0112]步骤S206：采用转移机构21将LED芯片25转移并固定连接至驱动基板27上。\n\n[0113]请参阅10E。具体的，首先在超声波作用下对驱动基板27上的焊膏27A进行加热。\n\n[0114]接着，当驱动基板27上的焊膏27A融化之后，将转移机构21与驱动基板27上的焊膏27A接触，转移机构21上的LED芯片25与焊膏27A粘结，进而使得LED芯片25固定连接至驱动基板27上。随后转入步骤S207。\n\n[0115]步骤S207：采用通气机构23对转移本体2121上的通气通道21A通气，以使LED芯片25从转移本体2121上脱离。\n\n[0116]请继续参阅图8和图9。其中，转移本体2121上设置有通气通道21A。通气通道21A的出气口朝向LED芯片25。通气机构23的出气口连通于通气通道21A的进气口。进一步的，基板211上设置有多个通气孔211A，通气孔211A一一对应连通于通气通道21A。通气孔211A的进气口连通于通气机构23的出气口。通气孔211A的出气口连通于通气通道21A的进气口。\n\n[0117]在本申请实施例中，通气机构23为通气泵，通气泵通过通气管23A与通气孔211A连通。通气管23A的出气口连通于通气孔211A的进气口。\n\n[0118]具体的，在通气泵的作用下向通气通道21A通气，进而使得LED芯片25从转移本体2121上脱离。\n\n[0119]进一步的，在本申请实施例中，在LED芯片25从转移本体2121上脱离之后，还包括：采用溶剂将LED芯片25上残留的粘性液25A洗去，具体溶剂的类型可以根据粘性液25A的极性进行选择，在此不再赘述。\n\n[0120]这样便完成了本申请实施例的LED芯片的转移方法。\n\n[0121]相较于现有技术中的LED芯片转移系统，本申请提供的LED芯片转移系统通过在转移部件上设置吸附结构，并在LED芯片上形成粘性液，通过吸附结构的表面张力作用吸附粘性液，以使LED芯片从载台上脱离，进而实现了LED芯片的高效和精确转移。\n\n[0122]以上对本申请实施方式提供了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施方式的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10774, 23828, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种阵列基板、显示面板及显示面板的制作方法。\n\n背景技术\n\n[0002]近年来，显示行业得到了快速的发展，尤其是我国的显示行业，发生了天翻地覆的变化。通过技术、人才、先进设备的引进、以及核心技术的创新，我国已成为世界显示器制造大国，显示器水平达到世界领先水平。不仅结束了我国少屏的窘境，还引领显示界的潮流。\n\n[0003]显示行业的竞争变得越来越激烈，更新周期不断缩短，以液晶显示器(LCD)与有机发光二极管(OLED)的竞争尤为激烈。随着OLED工艺、材料的成熟以及良率的提升，LCD渐渐失去了在小尺寸的市场优势，特别是在手机市场，OLED已渐渐取代LCD的地位。近年来也兴起了很多新型的显示技术，例如QLED显示、E-ink、柔性LCD、PE显示、mini-LED、micro-LED等等。这些新技术因还存在成本、寿命、可靠性等一些问题，还不具备量产性。micro-LED因具有色域广、对比度高、响应速度快、分辨率高、寿命长等优点，被很多企业大力推广，同时被视为下一代最具有潜力的新型显示技术。\n\n[0004]发光元件micro-LED目前仍然存在很多缺陷，例如亮度不均匀、可靠性、转移良率低、TFT均匀性差、串色、混色、对比度差等问题。micro-LED出现串色、混色、对比度差等问题，这是因为micro-led芯片是多面发光体，而我们需要的只是micro-led芯片顶部发出的光，当相邻micro-led芯片都点亮的时候，侧面发出的光会互相干扰，从而出现串色、混色、对比度差等问题；对比度差也与micro-led面板金属对环境光发生反射有关。因此可以从控制micro-led芯片出光方向以及降低面板金属反射率两个方面着手，解决micro-led出现串色、混色、对比度差等问题。目前常见改善micro-led串色、混色、对比度差等问题的方法有：第一种方式为采用发光效率较高的micro-led芯片可提高对比度，该方法的缺点是功耗大、均匀性差；第二种方式为在micro-led芯片之间加黑色矩阵(BM)进行遮光，减少串色、混色、对比度差等问题，该方法的缺点是黑色矩阵制程难度大、黑色矩阵容易残留在铜电极上；第三种方式为对micro-led芯片进行侧面封装处理，遮挡侧面的光，从而减少串色、混色、对比度差等问题，该方法的缺点是micro-led芯片亮度降低、功耗大大提高；第四种方式为加贴偏光片提高对比度，缺点是增加成本。\n\n[0005]因此，确有必要来开发一种新型的阵列基板、显示面板及显示面板的制作方法，来克服现有技术中的缺陷。\n\n发明内容\n\n[0006]本发明的目的在于，提供一种阵列基板、显示面板及显示面板的制作方法，通过在阵列基板上制作一层覆盖层，所述覆盖层不仅可以吸收环境光及发光元件发出的光，无需增加偏光片就可以大大改善显示面板出现串色、混色、对比度差等问题，使得显示面板的黑态更黑，从而提高了对比度。同时所述覆盖层的制作工艺简单，减少了制作成本。\n\n[0007]为了实现上述目的，本发明其中一实施例中提供一种阵列基板，包括从下至上依次层叠设置的衬底层、驱动电路层以及覆盖层；所述覆盖层为灰色吸光材料，用于吸收对环境光及所述驱动电路层的反射光。\n\n[0008]进一步地，所述驱动电路层包括从下至上依次层叠设置的遮光层、缓冲层、有源层、栅极绝缘层、栅极金属层、层间绝缘层、源漏极金属层、平坦层以及导电层；具体地讲，所述缓冲层设于所述遮光层上；所述有源层设于所述缓冲层上；所述栅极绝缘层设于所述有源层上；所述栅极金属层设于所述栅极绝缘层上；所述层间绝缘层设于所述缓冲层上且完全覆盖所述有源层、所述栅极绝缘层以及所述栅极金属层；所述源漏极金属层设于所述层间绝缘层上；所述平坦层设于所述层间绝缘层上且完全覆盖所述源漏极金属层；所述导电层设于所述平坦层上。\n\n[0009]进一步地，所述源漏极金属层包括源电极、漏电极和浮动接线层，所述源电极和所述漏电极分别与所述有源层的掺杂区电连接；所述导电层包括阳极段和阴极段，所述阳极段与所述漏电极电连接，所述阴极段与所述浮动接线层电连接。\n\n[0010]进一步地，所述覆盖层设有凹槽，所述阳极段和所述阴极段裸露于所述凹槽内。\n\n[0011]本发明还提供一种显示面板，包括上述阵列基板以及发光元件；所述发光元件设于所述覆盖层上的凹槽内；所述发光元件包括阳极和阴极，所述阳极与所述阳极段电连接，所述阴极与所述阴极段电连接。\n\n[0012]进一步地，所述凹槽的深度小于等于所述发光元件的高度。\n\n[0013]进一步地，所述发光元件包括LED灯珠或micro-LED芯片。\n\n[0014]进一步地，所述显示面板还包括封装层，设于所述覆盖层上且完全覆盖所述发光元件。\n\n[0015]本发明还提供一种显示面板的制作方法，包括以下步骤：\n\n[0016]制作阵列基板步骤，所述阵列基板包括从下至上依次层叠设置的衬底层、驱动电路层以及覆盖层；所述驱动电路层包括导电层，所述导电层包括阳极段和阴极段；所述覆盖层为灰色吸光材料，用于吸收对环境光及所述驱动电路层的反射光；所述覆盖层上设有一凹槽，所述凹槽裸露所述阳极段和所述阴极段；以及\n\n[0017]设置发光元件步骤，在所述覆盖层上的凹槽内嵌入一发光元件，所述发光元件包括阳极和阴极，所述阳极通过锡膏焊接与所述阳极段电连接，所述阴极通过锡膏焊接与所述阴极段电连接。\n\n[0018]进一步地，所述制作阵列基板步骤包括以下步骤：\n\n[0019]制作衬底层；\n\n[0020]在所述衬底层上制作驱动电路层；以及\n\n[0021]在所述驱动电路层上制作覆盖层，并通过曝光、显影、固化工艺在对应所述阳极段和所述阴极段位置处蚀刻形成一凹槽，所述凹槽的深度小于等于所述发光元件的高度。\n\n[0022]本发明的有益效果在于，提供一种阵列基板、显示面板及显示面板的制作方法，通过在阵列基板、上制作一层覆盖层，所述覆盖层不仅可以吸收环境光及发光元件发出的光，无需增加偏光片就可以大大改善显示面板出现串色、混色、对比度差等问题，使得显示面板的黑态更黑，从而提高了对比度。同时所述覆盖层的制作工艺简单，减少了制作成本，极大地提高了产品的竞争力。\n\n附图说明\n\n[0023]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0024]图1为本发明实施例中一种阵列基板的结构示意图；\n\n[0025]图2为本发明实施例中一种显示面板的结构示意图；\n\n[0026]图3为本发明实施例中一种显示面板的制作方法的流程图；\n\n[0027]图4为图3中所述制作源漏极金属层步骤的流程图；\n\n[0028]图5为图4中所述制作驱动电路层步骤的流程图。\n\n[0029]图中部件标识如下：\n\n[0030]1、衬底层，2、驱动电路层，3、覆盖层，4、发光元件，5、封装层，\n\n[0031]10、阵列基板，21、遮光层，22、缓冲层，23、有源层，24、栅极绝缘层，\n\n[0032]25、栅极金属层，26、层间绝缘层，27、源漏极金属层，28、平坦层，\n\n[0033]29、导电层，31、凹槽，41、阳极，42、阴极，43、发光层，\n\n[0034]100、显示面板，271、源电极，272、漏电极，273、浮动接线层，\n\n[0035]291、阳极段，292、阴极段。\n\n具体实施方式\n\n[0036]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0037]在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的部件以相似数字标号表示。本发明所提到的方向用语，例如，上、下、前、后、左、右、内、外、上表面、下表面、侧面、顶部、底部、前端、后端、末端等，仅是附图中的方向，只是用来解释和说明本发明，而不是用来限定本发明的保护范围。\n\n[0038]当某些部件被描述为“在”另一部件“上”时，所述部件可以直接置于所述另一部件上；也可以存在一中间部件，所述部件置于所述中间部件上，且所述中间部件置于另一部件上。当一个部件被描述为“安装至”或“连接至”另一部件时，二者可以理解为直接“安装”或“连接”，或者一个部件通过一中间部件间接“安装至”或“连接至”另一个部件。\n\n[0039]请参阅图1所示，本发明实施例中提供一种阵列基板10，包括从下至上依次层叠设置的衬底层1、驱动电路层2以及覆盖层3；所述覆盖层3为灰色吸光材料，用于吸收对环境光及所述驱动电路层2的反射光，并防止由阵列基板10构成的显示面板出现串色、混色等问题，使得显示面板的黑态更黑，从而提高对比度。\n\n[0040]请参阅图1所示，所述驱动电路层2包括从下至上依次层叠设置的遮光层21、缓冲层22、有源层23、栅极绝缘层24、栅极金属层25、层间绝缘层26、源漏极金属层27、平坦层28以及导电层29；具体地讲，所述缓冲层22设于所述遮光层21上；所述有源层23设于所述缓冲层22上；所述栅极绝缘层24设于所述有源层23上；所述栅极金属层25设于所述栅极绝缘层24上；所述层间绝缘层26设于所述缓冲层22上且完全覆盖所述有源层23、所述栅极绝缘层24以及所述栅极金属层25；所述源漏极金属层27设于所述层间绝缘层26上；所述平坦层28设于所述层间绝缘层26上且完全覆盖所述源漏极金属层27；所述导电层29设于所述平坦层28上。\n\n[0041]请参阅图1所示，所述源漏极金属层27包括源电极271、漏电极272和浮动接线层273，所述源电极271和所述漏电极272分别与所述有源层23的掺杂区电连接；所述导电层29包括阳极段291和阴极段292，所述阳极段291与所述漏电极272电连接，所述阴极段292与所述浮动接线层273电连接。在使用时，所述漏电极272接通电源正极，电流通过所述漏电极272经所述有源层23传导至所述漏电极272上，再传导至所述阳极段291上，所述浮动接线层273接通电源负极，电子经所述浮动接线层273传导至所述阴极段292上。\n\n[0042]如图1所示，本实施例中，所述源电极271还与所述遮光层21电连接。\n\n[0043]请参阅图1所示，所述覆盖层3设有凹槽31，所述阳极段291和所述阴极段292裸露于所述凹槽31内，便于后续所述阳极段291和所述阴极段292与发光元件电连接。\n\n[0044]请参阅图2所示，本发明还提供一种显示面板100，包括上述阵列基板10以及发光元件4；所述发光元件4设于所述覆盖层3上的凹槽31内；所述发光元件4包括阳极41和阴极42，在所述阳极41与所述阴极42之间为发光层43，所述阳极41与所述阳极段291电连接，所述阴极42与所述阴极段292电连接。其中所述覆盖层3为灰色吸光材料，用于吸收对环境光及所述驱动电路层2的反射光，并防止由所述显示面板100出现串色、混色等问题，使得所述显示面板100的黑态更黑，从而提高对比度。\n\n[0045]请参阅图1、图2所示，在使用时，所述漏电极272接通电源正极，电流通过所述漏电极272经所述有源层23传导至所述漏电极272上，再传导至所述阳极段291上与所述发光元件4的所述阳极41导通，所述浮动接线层273接通电源负极，电信号经所述浮动接线层273传导至所述阴极段292上与所述发光元件4的所述阴极42导通，从而使得所述发光元件4发光。\n\n[0046]在本实施例中，所述凹槽31的深度小于等于所述发光元件4的高度，这样便于所述发光元件4嵌入至所述凹槽31内。\n\n[0047]在本实施例中，所述发光元件4包括LED灯珠或Micro-LED芯片。其中，LED灯珠还可称为LED芯片，通常用在液晶显示装置的背光模组中，作为灯条上的发光元件。Micro-LED芯片相对于LED灯珠的尺寸较小，可用在LED显示装置中。示例性的，可形成单个独立的Micro-LED芯片，后通过批量转移技术或巨量转移技术，将Micro-LED芯片电连接至衬底基板的一侧表面，以形成所述显示面板100。\n\n[0048]在其他实施方式中，所述发光元件4还可为本领域技术人员可知的其他类型的发光结构，本发明实施例对此不作限定。\n\n[0049]请参阅图2所示，所述显示面板100还包括封装层5，设于所述覆盖层3上且完全覆盖所述发光元件4，用于阻隔水氧。\n\n[0050]请参阅图3所示，本发明还提供一种显示面板100的制作方法，包括以下步骤：\n\n[0051]S1、制作阵列基板10步骤，所述阵列基板10包括从下至上依次层叠设置的衬底层1、驱动电路层2以及覆盖层3；所述驱动电路层2包括导电层29，所述导电层29包括阳极段291和阴极段292；所述覆盖层3为灰色吸光材料，用于吸收对环境光及所述驱动电路层2的反射光；所述覆盖层3上设有一凹槽31，所述阳极段291和所述阴极段292裸露于所述凹槽31内；以及\n\n[0052]S2、设置发光元件4步骤，在所述覆盖层3上的凹槽31内嵌入一发光元件4，所述发光元件4包括阳极41和阴极42，所述阳极41通过锡膏焊接与所述阳极段291电连接，所述阴极42通过锡膏焊接与所述阴极段292电连接。\n\n[0053]请参阅图4所示，所述制作阵列基板10步骤S1包括以下步骤：\n\n[0054]S11、制作衬底层1；\n\n[0055]S12、在所述衬底层1上制作驱动电路层2；以及\n\n[0056]S13、在所述驱动电路层2上制作覆盖层3，并通过曝光、显影、固化工艺在对应所述阳极段291和所述阴极段292位置处蚀刻形成一凹槽31，所述凹槽31的深度小于等于所述发光元件4的高度，这样便于所述发光元件4嵌入至所述凹槽31内。\n\n[0057]请参阅图5所示，所述制作驱动电路层2步骤S12包括以下步骤：\n\n[0058]S121、制作遮光层21；\n\n[0059]S122、在所述遮光层21上制作缓冲层22；\n\n[0060]S123、在所述缓冲层22上制作有源层23；\n\n[0061]S124、在所述有源层23上制作栅极绝缘层24；\n\n[0062]S125、在所述栅极绝缘层24上制作栅极金属层25；\n\n[0063]S126、在所述缓冲层22上制作层间绝缘层26，所述层间绝缘层26完全覆盖所述有源层23、所述栅极绝缘层24以及所述栅极金属层25；\n\n[0064]S127、在所述层间绝缘层26上制作源漏极金属层27；\n\n[0065]S128、在所述层间绝缘层26上制作平坦层28，所述平坦层28完全覆盖所述源漏极金属层27；以及\n\n[0066]S129、在所述平坦层28上制作导电层29。\n\n[0067]其中，请同时参阅图1所示，所述源漏极金属层27包括源电极271、漏电极272和浮动接线层273，所述源电极271和所述漏电极272分别与所述有源层23的掺杂区电连接；所述导电层29包括阳极段291和阴极段292，所述阳极段291与所述漏电极272电连接，所述阴极段292与所述浮动接线层273电连接。\n\n[0068]请参阅图3所示，在所述设置发光元件4步骤S2之后还包括步骤：\n\n[0069]S3、制作封装层5步骤，在所述覆盖层3上制作封装层5，所述封装层5完全覆盖所述发光元件4，用于阻隔水氧。\n\n[0070]本发明的有益效果在于，提供一种阵列基板10、显示面板100及显示面板100的制作方法，通过在阵列基板10上制作一层覆盖层3，所述覆盖层3不仅可以吸收环境光及发光元件4发出的光，无需增加偏光片就可以大大改善显示面板100出现串色、混色、对比度差等问题，使得显示面板100的黑态更黑，从而提高了对比度。同时所述覆盖层3的制作工艺简单，减少了制作成本，极大地提高了产品的竞争力。\n\n[0071]以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种阵列基板、显示面板及显示面板的制作方法。\n\n背景技术\n\n[0002]近年来，显示行业得到了快速的发展，尤其是我国的显示行业，发生了天翻地覆的变化。通过技术、人才、先进设备的引进、以及核心技术的创新，我国已成为世界显示器制造大国，显示器水平达到世界领先水平。不仅结束了我国少屏的窘境，还引领显示界的潮流。\n\n[0003]显示行业的竞争变得越来越激烈，更新周期不断缩短，以液晶显示器(LCD)与有机发光二极管(OLED)的竞争尤为激烈。随着OLED工艺、材料的成熟以及良率的提升，LCD渐渐失去了在小尺寸的市场优势，特别是在手机市场，OLED已渐渐取代LCD的地位。近年来也兴起了很多新型的显示技术，例如QLED显示、E-ink、柔性LCD、PE显示、mini-LED、micro-LED等等。这些新技术因还存在成本、寿命、可靠性等一些问题，还不具备量产性。micro-LED因具有色域广、对比度高、响应速度快、分辨率高、寿命长等优点，被很多企业大力推广，同时被视为下一代最具有潜力的新型显示技术。\n\n[0004]发光元件micro-LED目前仍然存在很多缺陷，例如亮度不均匀、可靠性、转移良率低、TFT均匀性差、串色、混色、对比度差等问题。micro-LED出现串色、混色、对比度差等问题，这是因为micro-led芯片是多面发光体，而我们需要的只是micro-led芯片顶部发出的光，当相邻micro-led芯片都点亮的时候，侧面发出的光会互相干扰，从而出现串色、混色、对比度差等问题；对比度差也与micro-led面板金属对环境光发生反射有关。因此可以从控制micro-led芯片出光方向以及降低面板金属反射率两个方面着手，解决micro-led出现串色、混色、对比度差等问题。目前常见改善micro-led串色、混色、对比度差等问题的方法有：第一种方式为采用发光效率较高的micro-led芯片可提高对比度，该方法的缺点是功耗大、均匀性差；第二种方式为在micro-led芯片之间加黑色矩阵(BM)进行遮光，减少串色、混色、对比度差等问题，该方法的缺点是黑色矩阵制程难度大、黑色矩阵容易残留在铜电极上；第三种方式为对micro-led芯片进行侧面封装处理，遮挡侧面的光，从而减少串色、混色、对比度差等问题，该方法的缺点是micro-led芯片亮度降低、功耗大大提高；第四种方式为加贴偏光片提高对比度，缺点是增加成本。\n\n[0005]因此，确有必要来开发一种新型的阵列基板、显示面板及显示面板的制作方法，来克服现有技术中的缺陷。\n\n发明内容\n\n[0006]本发明的目的在于，提供一种阵列基板、显示面板及显示面板的制作方法，通过在阵列基板上制作一层覆盖层，所述覆盖层不仅可以吸收环境光及发光元件发出的光，无需增加偏光片就可以大大改善显示面板出现串色、混色、对比度差等问题，使得显示面板的黑态更黑，从而提高了对比度。同时所述覆盖层的制作工艺简单，减少了制作成本。\n\n[0007]为了实现上述目的，本发明其中一实施例中提供一种阵列基板，包括从下至上依次层叠设置的衬底层、驱动电路层以及覆盖层；所述覆盖层为灰色吸光材料，用于吸收对环境光及所述驱动电路层的反射光。\n\n[0008]进一步地，所述驱动电路层包括从下至上依次层叠设置的遮光层、缓冲层、有源层、栅极绝缘层、栅极金属层、层间绝缘层、源漏极金属层、平坦层以及导电层；具体地讲，所述缓冲层设于所述遮光层上；所述有源层设于所述缓冲层上；所述栅极绝缘层设于所述有源层上；所述栅极金属层设于所述栅极绝缘层上；所述层间绝缘层设于所述缓冲层上且完全覆盖所述有源层、所述栅极绝缘层以及所述栅极金属层；所述源漏极金属层设于所述层间绝缘层上；所述平坦层设于所述层间绝缘层上且完全覆盖所述源漏极金属层；所述导电层设于所述平坦层上。\n\n[0009]进一步地，所述源漏极金属层包括源电极、漏电极和浮动接线层，所述源电极和所述漏电极分别与所述有源层的掺杂区电连接；所述导电层包括阳极段和阴极段，所述阳极段与所述漏电极电连接，所述阴极段与所述浮动接线层电连接。\n\n[0010]进一步地，所述覆盖层设有凹槽，所述阳极段和所述阴极段裸露于所述凹槽内。\n\n[0011]本发明还提供一种显示面板，包括上述阵列基板以及发光元件；所述发光元件设于所述覆盖层上的凹槽内；所述发光元件包括阳极和阴极，所述阳极与所述阳极段电连接，所述阴极与所述阴极段电连接。\n\n[0012]进一步地，所述凹槽的深度小于等于所述发光元件的高度。\n\n[0013]进一步地，所述发光元件包括LED灯珠或micro-LED芯片。\n\n[0014]进一步地，所述显示面板还包括封装层，设于所述覆盖层上且完全覆盖所述发光元件。\n\n[0015]本发明还提供一种显示面板的制作方法，包括以下步骤：\n\n[0016]制作阵列基板步骤，所述阵列基板包括从下至上依次层叠设置的衬底层、驱动电路层以及覆盖层；所述驱动电路层包括导电层，所述导电层包括阳极段和阴极段；所述覆盖层为灰色吸光材料，用于吸收对环境光及所述驱动电路层的反射光；所述覆盖层上设有一凹槽，所述凹槽裸露所述阳极段和所述阴极段；以及\n\n[0017]设置发光元件步骤，在所述覆盖层上的凹槽内嵌入一发光元件，所述发光元件包括阳极和阴极，所述阳极通过锡膏焊接与所述阳极段电连接，所述阴极通过锡膏焊接与所述阴极段电连接。\n\n[0018]进一步地，所述制作阵列基板步骤包括以下步骤：\n\n[0019]制作衬底层；\n\n[0020]在所述衬底层上制作驱动电路层；以及\n\n[0021]在所述驱动电路层上制作覆盖层，并通过曝光、显影、固化工艺在对应所述阳极段和所述阴极段位置处蚀刻形成一凹槽，所述凹槽的深度小于等于所述发光元件的高度。\n\n[0022]本发明的有益效果在于，提供一种阵列基板、显示面板及显示面板的制作方法，通过在阵列基板、上制作一层覆盖层，所述覆盖层不仅可以吸收环境光及发光元件发出的光，无需增加偏光片就可以大大改善显示面板出现串色、混色、对比度差等问题，使得显示面板的黑态更黑，从而提高了对比度。同时所述覆盖层的制作工艺简单，减少了制作成本，极大地提高了产品的竞争力。\n\n附图说明\n\n[0023]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0024]图1为本发明实施例中一种阵列基板的结构示意图；\n\n[0025]图2为本发明实施例中一种显示面板的结构示意图；\n\n[0026]图3为本发明实施例中一种显示面板的制作方法的流程图；\n\n[0027]图4为图3中所述制作源漏极金属层步骤的流程图；\n\n[0028]图5为图4中所述制作驱动电路层步骤的流程图。\n\n[0029]图中部件标识如下：\n\n[0030]1、衬底层，2、驱动电路层，3、覆盖层，4、发光元件，5、封装层，\n\n[0031]10、阵列基板，21、遮光层，22、缓冲层，23、有源层，24、栅极绝缘层，\n\n[0032]25、栅极金属层，26、层间绝缘层，27、源漏极金属层，28、平坦层，\n\n[0033]29、导电层，31、凹槽，41、阳极，42、阴极，43、发光层，\n\n[0034]100、显示面板，271、源电极，272、漏电极，273、浮动接线层，\n\n[0035]291、阳极段，292、阴极段。\n\n具体实施方式\n\n[0036]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0037]在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的部件以相似数字标号表示。本发明所提到的方向用语，例如，上、下、前、后、左、右、内、外、上表面、下表面、侧面、顶部、底部、前端、后端、末端等，仅是附图中的方向，只是用来解释和说明本发明，而不是用来限定本发明的保护范围。\n\n[0038]当某些部件被描述为“在”另一部件“上”时，所述部件可以直接置于所述另一部件上；也可以存在一中间部件，所述部件置于所述中间部件上，且所述中间部件置于另一部件上。当一个部件被描述为“安装至”或“连接至”另一部件时，二者可以理解为直接“安装”或“连接”，或者一个部件通过一中间部件间接“安装至”或“连接至”另一个部件。\n\n[0039]请参阅图1所示，本发明实施例中提供一种阵列基板10，包括从下至上依次层叠设置的衬底层1、驱动电路层2以及覆盖层3；所述覆盖层3为灰色吸光材料，用于吸收对环境光及所述驱动电路层2的反射光，并防止由阵列基板10构成的显示面板出现串色、混色等问题，使得显示面板的黑态更黑，从而提高对比度。\n\n[0040]请参阅图1所示，所述驱动电路层2包括从下至上依次层叠设置的遮光层21、缓冲层22、有源层23、栅极绝缘层24、栅极金属层25、层间绝缘层26、源漏极金属层27、平坦层28以及导电层29；具体地讲，所述缓冲层22设于所述遮光层21上；所述有源层23设于所述缓冲层22上；所述栅极绝缘层24设于所述有源层23上；所述栅极金属层25设于所述栅极绝缘层24上；所述层间绝缘层26设于所述缓冲层22上且完全覆盖所述有源层23、所述栅极绝缘层24以及所述栅极金属层25；所述源漏极金属层27设于所述层间绝缘层26上；所述平坦层28设于所述层间绝缘层26上且完全覆盖所述源漏极金属层27；所述导电层29设于所述平坦层28上。\n\n[0041]请参阅图1所示，所述源漏极金属层27包括源电极271、漏电极272和浮动接线层273，所述源电极271和所述漏电极272分别与所述有源层23的掺杂区电连接；所述导电层29包括阳极段291和阴极段292，所述阳极段291与所述漏电极272电连接，所述阴极段292与所述浮动接线层273电连接。在使用时，所述漏电极272接通电源正极，电流通过所述漏电极272经所述有源层23传导至所述漏电极272上，再传导至所述阳极段291上，所述浮动接线层273接通电源负极，电子经所述浮动接线层273传导至所述阴极段292上。\n\n[0042]如图1所示，本实施例中，所述源电极271还与所述遮光层21电连接。\n\n[0043]请参阅图1所示，所述覆盖层3设有凹槽31，所述阳极段291和所述阴极段292裸露于所述凹槽31内，便于后续所述阳极段291和所述阴极段292与发光元件电连接。\n\n[0044]请参阅图2所示，本发明还提供一种显示面板100，包括上述阵列基板10以及发光元件4；所述发光元件4设于所述覆盖层3上的凹槽31内；所述发光元件4包括阳极41和阴极42，在所述阳极41与所述阴极42之间为发光层43，所述阳极41与所述阳极段291电连接，所述阴极42与所述阴极段292电连接。其中所述覆盖层3为灰色吸光材料，用于吸收对环境光及所述驱动电路层2的反射光，并防止由所述显示面板100出现串色、混色等问题，使得所述显示面板100的黑态更黑，从而提高对比度。\n\n[0045]请参阅图1、图2所示，在使用时，所述漏电极272接通电源正极，电流通过所述漏电极272经所述有源层23传导至所述漏电极272上，再传导至所述阳极段291上与所述发光元件4的所述阳极41导通，所述浮动接线层273接通电源负极，电信号经所述浮动接线层273传导至所述阴极段292上与所述发光元件4的所述阴极42导通，从而使得所述发光元件4发光。\n\n[0046]在本实施例中，所述凹槽31的深度小于等于所述发光元件4的高度，这样便于所述发光元件4嵌入至所述凹槽31内。\n\n[0047]在本实施例中，所述发光元件4包括LED灯珠或Micro-LED芯片。其中，LED灯珠还可称为LED芯片，通常用在液晶显示装置的背光模组中，作为灯条上的发光元件。Micro-LED芯片相对于LED灯珠的尺寸较小，可用在LED显示装置中。示例性的，可形成单个独立的Micro-LED芯片，后通过批量转移技术或巨量转移技术，将Micro-LED芯片电连接至衬底基板的一侧表面，以形成所述显示面板100。\n\n[0048]在其他实施方式中，所述发光元件4还可为本领域技术人员可知的其他类型的发光结构，本发明实施例对此不作限定。\n\n[0049]请参阅图2所示，所述显示面板100还包括封装层5，设于所述覆盖层3上且完全覆盖所述发光元件4，用于阻隔水氧。\n\n[0050]请参阅图3所示，本发明还提供一种显示面板100的制作方法，包括以下步骤：\n\n[0051]S1、制作阵列基板10步骤，所述阵列基板10包括从下至上依次层叠设置的衬底层1、驱动电路层2以及覆盖层3；所述驱动电路层2包括导电层29，所述导电层29包括阳极段291和阴极段292；所述覆盖层3为灰色吸光材料，用于吸收对环境光及所述驱动电路层2的反射光；所述覆盖层3上设有一凹槽31，所述阳极段291和所述阴极段292裸露于所述凹槽31内；以及\n\n[0052]S2、设置发光元件4步骤，在所述覆盖层3上的凹槽31内嵌入一发光元件4，所述发光元件4包括阳极41和阴极42，所述阳极41通过锡膏焊接与所述阳极段291电连接，所述阴极42通过锡膏焊接与所述阴极段292电连接。\n\n[0053]请参阅图4所示，所述制作阵列基板10步骤S1包括以下步骤：\n\n[0054]S11、制作衬底层1；\n\n[0055]S12、在所述衬底层1上制作驱动电路层2；以及\n\n[0056]S13、在所述驱动电路层2上制作覆盖层3，并通过曝光、显影、固化工艺在对应所述阳极段291和所述阴极段292位置处蚀刻形成一凹槽31，所述凹槽31的深度小于等于所述发光元件4的高度，这样便于所述发光元件4嵌入至所述凹槽31内。\n\n[0057]请参阅图5所示，所述制作驱动电路层2步骤S12包括以下步骤：\n\n[0058]S121、制作遮光层21；\n\n[0059]S122、在所述遮光层21上制作缓冲层22；\n\n[0060]S123、在所述缓冲层22上制作有源层23；\n\n[0061]S124、在所述有源层23上制作栅极绝缘层24；\n\n[0062]S125、在所述栅极绝缘层24上制作栅极金属层25；\n\n[0063]S126、在所述缓冲层22上制作层间绝缘层26，所述层间绝缘层26完全覆盖所述有源层23、所述栅极绝缘层24以及所述栅极金属层25；\n\n[0064]S127、在所述层间绝缘层26上制作源漏极金属层27；\n\n[0065]S128、在所述层间绝缘层26上制作平坦层28，所述平坦层28完全覆盖所述源漏极金属层27；以及\n\n[0066]S129、在所述平坦层28上制作导电层29。\n\n[0067]其中，请同时参阅图1所示，所述源漏极金属层27包括源电极271、漏电极272和浮动接线层273，所述源电极271和所述漏电极272分别与所述有源层23的掺杂区电连接；所述导电层29包括阳极段291和阴极段292，所述阳极段291与所述漏电极272电连接，所述阴极段292与所述浮动接线层273电连接。\n\n[0068]请参阅图3所示，在所述设置发光元件4步骤S2之后还包括步骤：\n\n[0069]S3、制作封装层5步骤，在所述覆盖层3上制作封装层5，所述封装层5完全覆盖所述发光元件4，用于阻隔水氧。\n\n[0070]本发明的有益效果在于，提供一种阵列基板10、显示面板100及显示面板100的制作方法，通过在阵列基板10上制作一层覆盖层3，所述覆盖层3不仅可以吸收环境光及发光元件4发出的光，无需增加偏光片就可以大大改善显示面板100出现串色、混色、对比度差等问题，使得显示面板100的黑态更黑，从而提高了对比度。同时所述覆盖层3的制作工艺简单，减少了制作成本，极大地提高了产品的竞争力。\n\n[0071]以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10775, 23829, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种Micro LED显示装置。\n\n背景技术\n\n[0002]微发光二极管(Micro LED)是新一代显示技术，具有自发光显示特性，相较于现有的有机发光二极管(Organic Light-Emitting Diode，OLED)技术，Micro LED显示装置具有亮度更高、发光效率更好、功耗更低的优点。Micro LED显示装置的显示原理是将LED结构设计进行薄膜化、微小化、阵列化，其尺寸仅在1～10um等级左右；之后将micro LED批量式转移至电路基板上，在利用物料沉积制程完成上基板封装，完成一结构简单的micro LED显示。\n\n[0003]现有技术的Micro LED显示装置，micro LED芯片使用倒装结构，即micro LED的阴/阳极在芯片同侧，优点是容易转移和封装，后续制程简单，但由于存在横向电流，microLED侧面发光明显，三色RGB与micro LED共同显示的情况下会出现串扰等不良现象。\n\n[0004]综上所述，现有的Micro LED显示装置，由于Micro LED的发散角度大，容易引起三色RGB像素之间的色彩串扰，进一步影响Micro LED显示装置的显示效果。\n\n发明内容\n\n[0005]本申请实施例提供一种Micro LED显示装置，能够减少Micro LED与三色RGB像素之间的色彩串扰，以解决现有的Micro LED显示装置，由于Micro LED的发散角度大，容易引起三色RGB像素之间的色彩串扰，进一步影响Micro LED显示装置的显示效果的技术问题。\n\n[0006]本申请实施例提供一种Micro LED显示装置，包括相对设置的驱动基板和彩膜基板，所述驱动基板面向所述彩膜基板的一面上设有呈阵列排布的多个蓝光Micro LED以及设置于所述驱动基板上并覆盖多个所述蓝光Micro LED的封装层，所述彩膜基板面向所述驱动基板的一面上设有彩色滤光层，所述封装层面向所述彩膜基板的一面上设置有图案化的凸形构件。\n\n[0007]在一些实施例中，所述彩色滤光层包括彩色像素层以及黑色矩阵，所述彩色像素层包括红色子像素单元、绿色子像素单元和白色子像素单元，所述黑色矩阵位于所述红色子像素单元、所述绿色子像素单元和所述白色子像素单元中的任意两者之间。\n\n[0008]在一些实施例中，每一所述凸形构件对应设置于所述彩色像素层在所述驱动基板上的投影处。\n\n[0009]在一些实施例中，每一所述凸形构件垂直于所述彩膜基板的横截面为圆弧面或椭圆弧面。\n\n[0010]在一些实施例中，所述凸形构件由所述封装层面向所述彩膜基板的一面经过灰阶曝光显影工艺制成。\n\n[0011]在一些实施例中，所述封装层的封装材料折射率大于外界环境折射率。\n\n[0012]在一些实施例中，所述蓝光Micro LED发射的蓝光波长为450-480nm。\n\n[0013]在一些实施例中，每一所述蓝光Micro LED与所述红色子像素单元、所述绿色子像素单元和所述白色子像素单元中的任意一项相对应。\n\n[0014]在一些实施例中，所述驱动基板上还设置有驱动控制电路，所述驱动控制电路电性连接多个所述蓝光Micro LED。\n\n[0015]在一些实施例中，所述驱动控制电路为薄膜晶体管阵列。\n\n[0016]本申请实施例所提供的Micro LED显示装置，将驱动基板上的封装层面向彩膜基板的一面上设置有图案化的凸形构件，收束了Micro LED发出的光线，进而减少了MicroLED与三色RGB像素之间的色彩串扰，进一步增加了Micro LED显示装置的出光效率，更进一步提高了Micro LED显示装置的显示亮度。\n\n附图说明\n\n[0017]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0018]图1为本申请实施例提供的Micro LED显示装置的结构示意图。\n\n[0019]图2为本申请实施例提供的Micro LED显示装置中Micro LED发射的光线经凸形构件折射后的光线路径图。\n\n[0020]图3为本申请实施例提供的Micro LED显示装置中凸形构件的制造方法示意图。\n\n具体实施方式\n\n[0021]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0022]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0023]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0024]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0025]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0026]本申请实施例针对现有的Micro LED显示装置，由于Micro LED的发散角度大，容易引起三色RGB像素之间的色彩串扰，进一步影响Micro LED显示装置的显示效果的技术问题，本实施例能够解决该缺陷。\n\n[0027]如图1所示，为本申请实施例提供的Micro LED显示装置的结构示意图。其中，所述Micro LED显示装置包括相对设置的驱动基板10和彩膜基板20，所述驱动基板10面向所述彩膜基板20的一面上依次设有第一基板11、设于所示第一基板11上的驱动控制电路12、设于所述驱动控制电路12上且呈阵列排布的多个蓝光Micro LED13以及设置于所述驱动基板10上并覆盖多个所述蓝光Micro LED13的封装层14，所述封装层14面向所述彩膜基板20的一面上设置有图案化的凸形构件141；所述彩膜基板20面向所述驱动基板10的一面依次设有第二基板22以及彩色滤光层21。\n\n[0028]具体地，所述彩色滤光层21包括彩色像素层212以及黑色矩阵211，所述彩色像素层212包括红色子像素单元2121、绿色子像素单元2122和白色子像素单元2123，所述黑色矩阵211位于所述红色子像素单元2121、所述绿色子像素单元2122和所述白色子像素单元2123中的任意两者之间。\n\n[0029]具体地，所述Micro LED显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。\n\n[0030]具体地，所述驱动控制电路12用于控制所述蓝光Micro LED13的开关和亮度。所述驱动控制电路12优选为薄膜晶体管阵列。\n\n[0031]具体地，所述第一基板11以及所述第二基板22可以为玻璃基板。\n\n[0032]具体地，所述红色子像素单元2121、所述绿色子像素单元2122的色彩转换材料可以为荧光粉或者量子点。所述白色子像素单元2123中不设置荧光粉或者量子点，蓝光直接经过所述白色子像素单元2123而发出蓝光。\n\n[0033]具体地，每一所述蓝光Micro LED13与所述红色子像素单元2121、所述绿色子像素单元2122和所述白色子像素单元2123中的任意一项相对应。\n\n[0034]具体地，所述封装层14可完全覆盖所述蓝光Micro LED13，以阻隔水汽、氧气，保护所述蓝光Micro LED13。所述封装层14一般包括有机封装层和无机封装层，无机封装层对水汽、氧气有很好的阻隔性能；有机封装层的存在可以使器件表面平整度更好，有利于后续无机封装层的形成，同时有机封装层的抗弯折性能比较好。其中，所述封装层14中的封装材料折射率大于外界环境折射率。\n\n[0035]具体地，每一所述凸形构件141对应设置于所述彩色像素层21在所述驱动基板10上的投影处；每一所述凸形构件141垂直于所述彩膜基板20的横截面为圆弧面或椭圆弧面；所述凸形构件141由所述封装层14面向所述彩膜基板20的一面经过灰阶曝光显影工艺制成。\n\n[0036]具体地，所述蓝光Micro LED13发射的蓝光波长为450-480nm。\n\n[0037]如图2所示，为本申请实施例提供的Micro LED显示装置中Micro LED发射的光线经凸形构件折射后的光线路径图。其中，由于所述封装层14中的封装材料折射率大于外界环境折射率，使得所述蓝光Micro LED13发射的光线经过所述凸形构件141后发生折射，入射角度小于出射角度，从而收束了所述Micro LED13发出的光线，进而减少了所述MicroLED13与所述彩色像素层212之间的色彩串扰，进一步增加了Micro LED显示装置的出光效率，更进一步提高了Micro LED显示装置的显示亮度。\n\n[0038]如图3所示，为本申请实施例提供的Micro LED显示装置中凸形构件的制造方法示意图。其中，所述凸形构件141由所述封装层14面向所述彩膜基板20的一面经过灰阶曝光显影工艺制成。其具体包括：在所述封装层14制作完成后，通过一掩膜版30对所述封装层14面向所述彩膜基板20的一面进行灰阶曝光处理，不同区域的曝光量不同，所述凸形构件141所在区域的曝光量小于其他区域的曝光量，蚀刻掉远离所述凸形构件141的区域，最终显影后并烘烤可得到所述凸形构件141。\n\n[0039]本申请实施例所提供的Micro LED显示装置，将驱动基板上的封装层面向彩膜基板的一面上设置有图案化的凸形构件，收束了Micro LED发出的光线，进而减少了MicroLED与三色RGB像素之间的色彩串扰，进一步增加了Micro LED显示装置的出光效率，更进一步提高了Micro LED显示装置的显示亮度。\n\n[0040]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0041]以上对本申请实施例所提供的一种Micro LED显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种Micro LED显示装置。\n\n背景技术\n\n[0002]微发光二极管(Micro LED)是新一代显示技术，具有自发光显示特性，相较于现有的有机发光二极管(Organic Light-Emitting Diode，OLED)技术，Micro LED显示装置具有亮度更高、发光效率更好、功耗更低的优点。Micro LED显示装置的显示原理是将LED结构设计进行薄膜化、微小化、阵列化，其尺寸仅在1～10um等级左右；之后将micro LED批量式转移至电路基板上，在利用物料沉积制程完成上基板封装，完成一结构简单的micro LED显示。\n\n[0003]现有技术的Micro LED显示装置，micro LED芯片使用倒装结构，即micro LED的阴/阳极在芯片同侧，优点是容易转移和封装，后续制程简单，但由于存在横向电流，microLED侧面发光明显，三色RGB与micro LED共同显示的情况下会出现串扰等不良现象。\n\n[0004]综上所述，现有的Micro LED显示装置，由于Micro LED的发散角度大，容易引起三色RGB像素之间的色彩串扰，进一步影响Micro LED显示装置的显示效果。\n\n发明内容\n\n[0005]本申请实施例提供一种Micro LED显示装置，能够减少Micro LED与三色RGB像素之间的色彩串扰，以解决现有的Micro LED显示装置，由于Micro LED的发散角度大，容易引起三色RGB像素之间的色彩串扰，进一步影响Micro LED显示装置的显示效果的技术问题。\n\n[0006]本申请实施例提供一种Micro LED显示装置，包括相对设置的驱动基板和彩膜基板，所述驱动基板面向所述彩膜基板的一面上设有呈阵列排布的多个蓝光Micro LED以及设置于所述驱动基板上并覆盖多个所述蓝光Micro LED的封装层，所述彩膜基板面向所述驱动基板的一面上设有彩色滤光层，所述封装层面向所述彩膜基板的一面上设置有图案化的凸形构件。\n\n[0007]在一些实施例中，所述彩色滤光层包括彩色像素层以及黑色矩阵，所述彩色像素层包括红色子像素单元、绿色子像素单元和白色子像素单元，所述黑色矩阵位于所述红色子像素单元、所述绿色子像素单元和所述白色子像素单元中的任意两者之间。\n\n[0008]在一些实施例中，每一所述凸形构件对应设置于所述彩色像素层在所述驱动基板上的投影处。\n\n[0009]在一些实施例中，每一所述凸形构件垂直于所述彩膜基板的横截面为圆弧面或椭圆弧面。\n\n[0010]在一些实施例中，所述凸形构件由所述封装层面向所述彩膜基板的一面经过灰阶曝光显影工艺制成。\n\n[0011]在一些实施例中，所述封装层的封装材料折射率大于外界环境折射率。\n\n[0012]在一些实施例中，所述蓝光Micro LED发射的蓝光波长为450-480nm。\n\n[0013]在一些实施例中，每一所述蓝光Micro LED与所述红色子像素单元、所述绿色子像素单元和所述白色子像素单元中的任意一项相对应。\n\n[0014]在一些实施例中，所述驱动基板上还设置有驱动控制电路，所述驱动控制电路电性连接多个所述蓝光Micro LED。\n\n[0015]在一些实施例中，所述驱动控制电路为薄膜晶体管阵列。\n\n[0016]本申请实施例所提供的Micro LED显示装置，将驱动基板上的封装层面向彩膜基板的一面上设置有图案化的凸形构件，收束了Micro LED发出的光线，进而减少了MicroLED与三色RGB像素之间的色彩串扰，进一步增加了Micro LED显示装置的出光效率，更进一步提高了Micro LED显示装置的显示亮度。\n\n附图说明\n\n[0017]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0018]图1为本申请实施例提供的Micro LED显示装置的结构示意图。\n\n[0019]图2为本申请实施例提供的Micro LED显示装置中Micro LED发射的光线经凸形构件折射后的光线路径图。\n\n[0020]图3为本申请实施例提供的Micro LED显示装置中凸形构件的制造方法示意图。\n\n具体实施方式\n\n[0021]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0022]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0023]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0024]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0025]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0026]本申请实施例针对现有的Micro LED显示装置，由于Micro LED的发散角度大，容易引起三色RGB像素之间的色彩串扰，进一步影响Micro LED显示装置的显示效果的技术问题，本实施例能够解决该缺陷。\n\n[0027]如图1所示，为本申请实施例提供的Micro LED显示装置的结构示意图。其中，所述Micro LED显示装置包括相对设置的驱动基板10和彩膜基板20，所述驱动基板10面向所述彩膜基板20的一面上依次设有第一基板11、设于所示第一基板11上的驱动控制电路12、设于所述驱动控制电路12上且呈阵列排布的多个蓝光Micro LED13以及设置于所述驱动基板10上并覆盖多个所述蓝光Micro LED13的封装层14，所述封装层14面向所述彩膜基板20的一面上设置有图案化的凸形构件141；所述彩膜基板20面向所述驱动基板10的一面依次设有第二基板22以及彩色滤光层21。\n\n[0028]具体地，所述彩色滤光层21包括彩色像素层212以及黑色矩阵211，所述彩色像素层212包括红色子像素单元2121、绿色子像素单元2122和白色子像素单元2123，所述黑色矩阵211位于所述红色子像素单元2121、所述绿色子像素单元2122和所述白色子像素单元2123中的任意两者之间。\n\n[0029]具体地，所述Micro LED显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。\n\n[0030]具体地，所述驱动控制电路12用于控制所述蓝光Micro LED13的开关和亮度。所述驱动控制电路12优选为薄膜晶体管阵列。\n\n[0031]具体地，所述第一基板11以及所述第二基板22可以为玻璃基板。\n\n[0032]具体地，所述红色子像素单元2121、所述绿色子像素单元2122的色彩转换材料可以为荧光粉或者量子点。所述白色子像素单元2123中不设置荧光粉或者量子点，蓝光直接经过所述白色子像素单元2123而发出蓝光。\n\n[0033]具体地，每一所述蓝光Micro LED13与所述红色子像素单元2121、所述绿色子像素单元2122和所述白色子像素单元2123中的任意一项相对应。\n\n[0034]具体地，所述封装层14可完全覆盖所述蓝光Micro LED13，以阻隔水汽、氧气，保护所述蓝光Micro LED13。所述封装层14一般包括有机封装层和无机封装层，无机封装层对水汽、氧气有很好的阻隔性能；有机封装层的存在可以使器件表面平整度更好，有利于后续无机封装层的形成，同时有机封装层的抗弯折性能比较好。其中，所述封装层14中的封装材料折射率大于外界环境折射率。\n\n[0035]具体地，每一所述凸形构件141对应设置于所述彩色像素层21在所述驱动基板10上的投影处；每一所述凸形构件141垂直于所述彩膜基板20的横截面为圆弧面或椭圆弧面；所述凸形构件141由所述封装层14面向所述彩膜基板20的一面经过灰阶曝光显影工艺制成。\n\n[0036]具体地，所述蓝光Micro LED13发射的蓝光波长为450-480nm。\n\n[0037]如图2所示，为本申请实施例提供的Micro LED显示装置中Micro LED发射的光线经凸形构件折射后的光线路径图。其中，由于所述封装层14中的封装材料折射率大于外界环境折射率，使得所述蓝光Micro LED13发射的光线经过所述凸形构件141后发生折射，入射角度小于出射角度，从而收束了所述Micro LED13发出的光线，进而减少了所述MicroLED13与所述彩色像素层212之间的色彩串扰，进一步增加了Micro LED显示装置的出光效率，更进一步提高了Micro LED显示装置的显示亮度。\n\n[0038]如图3所示，为本申请实施例提供的Micro LED显示装置中凸形构件的制造方法示意图。其中，所述凸形构件141由所述封装层14面向所述彩膜基板20的一面经过灰阶曝光显影工艺制成。其具体包括：在所述封装层14制作完成后，通过一掩膜版30对所述封装层14面向所述彩膜基板20的一面进行灰阶曝光处理，不同区域的曝光量不同，所述凸形构件141所在区域的曝光量小于其他区域的曝光量，蚀刻掉远离所述凸形构件141的区域，最终显影后并烘烤可得到所述凸形构件141。\n\n[0039]本申请实施例所提供的Micro LED显示装置，将驱动基板上的封装层面向彩膜基板的一面上设置有图案化的凸形构件，收束了Micro LED发出的光线，进而减少了MicroLED与三色RGB像素之间的色彩串扰，进一步增加了Micro LED显示装置的出光效率，更进一步提高了Micro LED显示装置的显示亮度。\n\n[0040]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0041]以上对本申请实施例所提供的一种Micro LED显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10776, 23830, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种显示装置和终端。\n\n背景技术\n\n[0002]在现有的显示装置中，各像素通过像素驱动电路进行驱动发光，由于各种原因像素驱动电路中驱动晶体管的阈值电压Vth会产生漂移，因此需要对驱动晶体管的Vth进行侦测补偿，以提升面板的均匀性。现有的补偿方式为在相邻显示帧之间的空白时间段进行侦测，然后在下一显示帧时进行数据补偿，然而，侦测需要花费的时间较长，而空白时间段时长有限，尤其在大尺寸高刷新率的情况下，侦测时间较短，侦测不能及时进行，导致后续补偿效果不佳，面板均匀性难以提升。\n\n[0003]因此，现有显示装置存在阈值电压补偿效果不佳的技术问题，需要改进。\n\n发明内容\n\n[0004]本申请实施例提供一种显示装置和终端，用以缓解现有显示装置中阈值电压补偿效果不佳的技术问题。\n\n[0005]本申请实施例提供一种显示装置，包括：\n\n[0006]多个子像素，所述多个子像素在所述显示装置中阵列排布，形成多个像素单元，所述像素单元包括沿第一方向交替排列的第一像素单元和第二像素单元，所述第一像素单元和所述第二像素单元均包括至少一行子像素；\n\n[0007]像素驱动电路，用于通过驱动单元驱动所述子像素发光，所述像素驱动电路包括通过第一驱动单元驱动所述第一像素单元中子像素发光的第一像素驱动电路、以及通过第二驱动单元驱动所述第二像素单元中子像素发光的第二像素驱动电路；\n\n[0008]控制模块，用于根据获取到的控制参数，控制所述显示装置进入节能模式，在所述节能模式中，所述控制模块用于，控制所述第一像素驱动电路在奇数显示帧内，通过所述第一驱动单元驱动所述第一像素单元中子像素发光，在偶数显示帧内，侦测所述第一驱动单元的第一阈值电压，并在下一奇数显示帧内，根据侦测到的所述第一阈值电压对所述第一驱动单元进行数据补偿，且控制所述第二像素驱动电路在偶数显示帧内，通过所述第二驱动单元驱动所述第二像素单元中子像素发光，在奇数显示帧内，侦测所述第二驱动单元的第二阈值电压，并在下一偶数显示帧内，根据侦测到的所述第二阈值电压对所述第二驱动单元进行数据补偿。\n\n[0009]在本申请的显示装置中，所述控制模块用于，根据获取到的当前显示画面为静态或文字的信息，控制所述显示装置进入节能模式。\n\n[0010]在本申请的显示装置中，所述控制模块用于，根据获取到的外部输入的进入节能模式指令，控制所述显示装置进入节能模式。\n\n[0011]在本申请的显示装置中，所述像素驱动电路包括数据信号输入单元、所述驱动单元、侦测单元和存储单元，所述数据信号输入单元用于在第一控制信号的控制下向第一点输入第一数据信号，所述驱动单元用于在所述第一点的电位控制下驱动子像素对应的发光器件发光，所述侦测单元通过第二点与所述驱动单元连接，用于在第二控制信号的控制下侦测所述驱动单元的阈值电压，所述存储单元通过第一点和第二点与所述驱动单元连接，用于存储所述驱动单元的阈值电压，所述数据信号输入单元还用于，根据所述侦测单元侦测到的阈值电压，向所述第一点输入补偿后的第二数据信号。\n\n[0012]在本申请的显示装置中，所述数据信号输入单元包括第一晶体管，所述第一晶体管的栅极接入所述第一控制信号，所述第一晶体管的第一电极与数据线连接，所述第一晶体管的第二电极与所述第一点连接。\n\n[0013]在本申请的显示装置中，所述驱动单元包括第二晶体管，所述第二晶体管的栅极与所述第一点连接，所述第二晶体管的第一电极接入电源高电位信号，所述第二晶体管的第二电极与所述发光器件通过所述第二点连接。\n\n[0014]在本申请的显示装置中，所述侦测单元包括第三晶体管、第一开关和第二开关，所述第三晶体管的栅极接入所述第二控制信号，所述第三晶体管的第一电极连接所述第二点，所述第三晶体管的第二电极与所述第一开关的第一动触点、以及所述第二开关的第二动触点连接，所述第一开关的第一静触点连接初始电压信号输入端，所述第二开关的第二静触点连接模数转换器。\n\n[0015]在本申请的显示装置中，所述存储单元包括存储电容，所述存储电容的第一极板与所述第一点连接，所述存储电容的第二极板与所述第二点连接。\n\n[0016]在本申请的显示装置中，所述发光器件的阳极与所述第二点连接，所述发光器件的阴极接入电源低电位信号。\n\n[0017]在本申请的显示装置中，所述发光器件为微型发光二极管。\n\n[0018]在本申请的显示装置中，在所述节能模式下，所述侦测单元用于，在侦测时间段的初始化阶段，控制所述第一动触点与所述第一静触点连接，所述第二动触点与所述第二静触点断开，在所述侦测时间段的充电阶段，控制所述第一动触点与第一静触点、以及所述第二动触点与所述第二静触点均断开，在所述侦测时间段的电压侦测阶段，控制所述第一动触点与第一静触点断开，所述第二动触点与所述第二静触点连接。\n\n[0019]在本申请的显示装置中，所述控制模块用于，在所述节能模式下的同一显示帧内，控制需要侦测阈值电压的像素驱动电路同时写入第一数据信号，控制需要驱动子像素发光的像素驱动电路沿所述第一方向逐行写入第二数据信号，且写入第一数据信号与写入第二数据信号的时间不重合。\n\n[0020]在本申请的显示装置中，所述控制模块用于，在所述节能模式下的同一显示帧内，控制需要侦测阈值电压的像素驱动电路沿所述第一方向逐行写入第一数据信号，控制需要驱动子像素发光的像素驱动电路沿所述第一方向逐行写入第二数据信号，且写入第一数据信号与写入第二数据信号的时间不重合。在本申请的显示装置中，所述控制模块还用于，在所述显示装置未进入节能模式时，控制所有像素驱动电路在显示帧驱动对应子像素发光，在相邻显示帧之间的空白时间段侦测驱动单元的阈值电压。\n\n[0021]本申请还提供一种终端，包括显示装置和外壳，所述显示装置为上述任一项所述的显示装置。\n\n[0022]有益效果：本申请实施例提供一种显示装置和终端，显示装置包括多个子像素、像素驱动电路和控制模块，所述多个子像素在所述显示装置中阵列排布，形成多个像素单元，所述像素单元包括沿第一方向交替排列的第一像素单元和第二像素单元，所述第一像素单元和所述第二像素单元均包括至少一行子像素；像素驱动电路，用于通过驱动单元驱动所述子像素发光，所述像素驱动电路包括通过第一驱动单元驱动所述第一像素单元中子像素发光的第一像素驱动电路、以及通过第二驱动单元驱动所述第二像素单元中子像素发光的第二像素驱动电路；控制模块，用于根据获取到的控制参数，控制所述显示装置进入节能模式，在所述节能模式中，所述控制模块用于，控制所述第一像素驱动电路在奇数显示帧内，通过所述第一驱动单元驱动所述第一像素单元中子像素发光，在偶数显示帧内，侦测所述第一驱动单元的第一阈值电压，并在下一奇数显示帧内，根据侦测到的所述第一阈值电压对所述第一驱动单元进行数据补偿，且控制所述第二像素驱动电路在偶数显示帧内，通过所述第二驱动单元驱动所述第二像素单元中子像素发光，在奇数显示帧内，侦测所述第二驱动单元的第二阈值电压，并在下一偶数显示帧内，根据侦测到的所述第二阈值电压对所述第二驱动单元进行数据补偿。本申请的显示装置在特定条件下进入节能模式，且在节能模式下控制当前显示帧内一部分子像素发光，另一部分子像素对应的像素驱动电路进行阈值电压侦测，由于显示帧的时长大于相邻显示帧之间的空白时间段的时长，使得能耗降低的同时侦测时间也充足，侦测可以及时进行，后续补偿效果较好，面板均匀性得到提升。\n\n附图说明\n\n[0023]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0024]图1为本申请实施例提供的显示装置中像素单元的第一种排列示意图。\n\n[0025]图2为本申请实施例提供的显示装置中像素单元的第二种排列示意图。\n\n[0026]图3为图1的像素单元中各子像素在奇数显示帧内的发光情况示意图。\n\n[0027]图4为图1的像素单元中各子像素在偶数显示帧内的发光情况示意图。\n\n[0028]图5为本申请实施例提供的显示装置实现能耗降低和侦测的实施过程示意图。\n\n[0029]图6为本申请实施例提供的显示装置中像素驱动电路的结构示意图。\n\n[0030]图7为本申请实施例中用于对驱动单元的阈值电压进行侦测的像素驱动电路在侦测时间段各信号的时序图。\n\n[0031]图8为本申请实施例中用于驱动子像素发光的像素驱动电路在显示时间段各信号的时序图。\n\n[0032]图9为本申请实施例提供的显示装置中像素驱动电路与各信号线的连接示意图。\n\n[0033]图10为本申请实施例提供的显示装置中，奇数显示帧内各行子像素对应的像素驱动电路中各信号的第一种时序图。\n\n[0034]图11为本申请实施例提供的显示装置中，奇数显示帧内各行子像素对应的像素驱动电路中各信号的第二种时序图。\n\n具体实施方式\n\n[0035]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0036]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0037]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0038]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0039]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0040]本申请实施例提供一种显示装置和终端，用以缓解现有显示装置中阈值电压补偿效果不佳的技术问题。\n\n[0041]本申请实施例提供一种显示装置，包括多个子像素、像素驱动电路和控制模块；多个子像素在显示装置中阵列排布，形成多个像素单元，像素单元包括沿第一方向交替排列的第一像素单元和第二像素单元，第一像素单元和第二像素单元均包括至少一行子像素；像素驱动电路用于通过驱动单元驱动子像素发光，像素驱动电路包括通过第一驱动单元驱动第一像素单元中子像素发光的第一像素驱动电路、以及通过第二驱动单元驱动第二像素单元中子像素发光的第二像素驱动电路；控制模块用于根据获取到的控制参数，控制显示装置进入节能模式，在节能模式中，控制模块用于，控制第一像素驱动电路在奇数显示帧内，通过第一驱动单元驱动第一像素单元中子像素发光，在偶数显示帧内，侦测第一驱动单元的第一阈值电压，并在下一奇数显示帧内，根据侦测到的第一阈值电压对第一驱动单元进行数据补偿，且控制第二像素驱动电路在偶数显示帧内，通过第二驱动单元驱动第二像素单元中子像素发光，在奇数显示帧内，侦测第二驱动单元的第二阈值电压，并在下一偶数显示帧内，根据侦测到的第二阈值电压对第二驱动单元进行数据补偿。\n\n[0042]如图1所示，显示装置中包括阵列排布的多个子像素，子像素包括红色子像素R、绿色子像素G和蓝色子像素B，红色子像素R、绿色子像素G和蓝色子像素B共同形成一个像素。各子像素形成多个像素单元，像素单元包括沿第一方向Y交替排列的第一像素单元11和第二像素单元12，第一像素单元11和第二像素单元12均包括至少一行子像素。在本实施例中，第一方向Y为纵向的列的方向，第一像素单元11包括一行子像素，第二素单元12包括一行子像素，由于两者沿第一方向Y交替排列，第一像素单元11中的子像素均为奇数行子像素，第二像素单元12中子像素均为偶数行子像素，但本申请不以此为限，第一像素单元11和第二像素单元12的位置可以互换，此时第一像素单元11中的子像素均为偶数行子像素，第二像素单元12中子像素均为奇数行子像素。\n\n[0043]在一种实施例中，如图2所示，第一像素单元11中设置有2行子像素，第二像素单元12中设置有1行子像素，第一像素单元11和第二像素单元12交替排列。即，第一像素单元11和第二像素单元12中子像素的行数均可以多于一行，且第一像素单元11和第二像素单元12中子像素的行数可以相等，也可以不相等，本领域的技术人员可根据需要，合理设置各像素单元中子像素的行数。为方便描述，本申请实施例中均以图1中结构为例进行说明。\n\n[0044]显示装置中的各子像素，均由像素驱动电路中的驱动单元进行驱动发光，且每个子像素均对应一个像素驱动电路。像素驱动电路包括第一像素驱动电路和第二像素驱动电路，其中第一像素驱动电路通过第一驱动单元驱动第一像素单元中子像素发光，第二像素驱动电路通过第二驱动单元驱动第二像素单元中子像素发光。\n\n[0045]显示装置包括显示面板和与显示面板绑定的驱动IC，子像素和像素驱动电路设置在显示面板中，驱动IC中设置有控制模块，控制模块用于根据获取到的控制参数，控制显示装置进入节能模式。\n\n[0046]本申请的显示装置中，子像素对应的发光器件为Micro LED，单个Micro LED的尺寸较小，约1um-100um，Micro LED组成高分辨率的显示面板，相对于其他种类的显示面板，本申请的显示面板在相同尺寸内包含更多的像素，对于大尺寸面板功耗明显增加，而由于Micro LED显示面板的像素密度(Pixels Per Inch，PPI)较大，以4K面板为例，若只使用其中的一半像素用来显示，显示效果是可以做到与普通2K液晶面板一致的，此时分辨率有所下降，但仍可以保证一定的显示效果。因此，在一些对于分辨率要求不高的显示场景，控制模块可以在获取到相应的控制参数后，控制显示装置进入节能模式，使部分子像素发光，另一部分子像素不发光，以此来降低显示装置的功耗。\n\n[0047]在节能模式中，为保证一定的显示效果，发光和不发光的子像素需要交替排列，才能最大程度保证视觉效果，因此在节能模式下，控制模块控制显示装置的第一像素单元11和第二像素单元12进行交替发光，具体地，控制第一像素驱动电路在奇数显示帧内，通过第一驱动单元驱动第一像素单元11中子像素发光，且控制第二像素驱动电路在偶数显示帧内，通过第二驱动单元驱动第二像素单元12中子像素发光。则，在奇数显示帧内，如图3所示，第一像素单元11中子像素发光，第二像素单元12中子像素不发光，在偶数显示帧内，如图4所示，第一像素单元11中子像素不发光，第二像素单元12中子像素发光。其中，从第一次出现子像素部分发光的显示帧开始，到最后一次出现子像素部分发光的显示帧结束，该时间段为节能模式的时间段，该时间段内所有显示帧从第一帧计算，所有排列在奇数位的为奇数显示帧，所有排列在偶数位的为偶数显示帧。\n\n[0048]像素驱动电路通过驱动单元驱动各子像素发光，在像素驱动电路工作一段时间后，驱动单元的阈值电压会产生漂移现象，因此需要对驱动单元的阈值电压进行侦测，然后进行数据补偿。在节能模式下，由于偶数显示帧内第一像素单元11中子像素不需要发光，控制模块可控制第一像素驱动电路在该偶数显示帧内，侦测第一驱动单元的第一阈值电压，并在下一奇数显示帧内，根据侦测到的第一阈值电压对第一驱动单元进行数据补偿，同时，由于奇数显示帧内第二像素单元12中子像素不需要发光，控制模块可控制第二像素驱动电路在该奇数显示帧内，侦测第二驱动单元的第二阈值电压，并在下一偶数显示帧内，根据侦测到的第二阈值电压对第二驱动单元进行数据补偿。\n\n[0049]现有技术中对驱动单元阈值电压的补偿方式为，在相邻显示帧之间的空白时间段进行侦测，然后在下一显示帧时进行数据补偿，然而，侦测需要花费的时间较长，而空白时间段时长有限，尤其在大尺寸高刷新率的情况下，侦测时间较短，侦测不能及时进行，导致后续补偿效果不佳，面板均匀性难以提升。\n\n[0050]本申请的显示装置在特定条件下进入节能模式，且在节能模式下控制当前显示帧内一部分子像素发光，另一部分子像素对应的像素驱动电路进行阈值电压侦测，由于显示帧的时长大于相邻显示帧之间的空白时间段的时长，使得能耗降低的同时侦测时间也充足，侦测可以及时进行，后续补偿效果较好，面板均匀性得到提升。\n\n[0051]图5示出了显示装置实现能耗降低和侦测的实施过程，包括以下步骤：\n\n[0052]S10：获得控制参数。控制模块首先获得控制参数，然后根据控制参数，判断是否需要进入节能模式，\n\n[0053]S20：进入节能模式。控制模块根据控制参数，在不需要进入节能模式时，继续保持获取控制参数的状态，当需要进入节能模式时，则进入节能模式，在节能模式下，控制模块控制各像素驱动电路实现不同功能，使得各子像素呈现两种状态。\n\n[0054]S21：低分辨率显示。控制模块控制像素驱动电路在当前显示帧内，驱动部分子像素发光，部分子像素不发光，且发光与不发光的子像素以一行或多行为单位交替排列，使得显示装置进入低分辨率显示状态。\n\n[0055]S22：对驱动晶体管进行侦测和补偿。控制模块控制不发光子像素的像素驱动电路，在当前显示帧内，对其驱动晶体管的阈值电压进行侦测和补偿。\n\n[0056]当切换到下一显示帧时，S21和S22中各子像素的状态互换，原来发光的子像素转换为不发光，原来不发光的子像素转换为发光，相应地，对不发光子像素对应的像素驱动电路中的驱动晶体管进行阈值电压侦测和补偿。\n\n[0057]通过上述步骤，控制模块在节能模式下控制当前显示帧内一部分子像素发光，另一部分子像素对应的像素驱动电路进行阈值电压侦测，由于显示帧的时长大于相邻显示帧之间的空白时间段的时长，使得能耗降低的同时侦测时间也充足，侦测可以及时进行，后续补偿效果较好，面板均匀性得到提升。\n\n[0058]控制模块根据获取到的控制参数，控制显示装置进入节能模式，其中获取控制参数可以有多种方式。\n\n[0059]在一种实施例中，控制模块用于，根据获取到的当前显示画面为静态或文字的信息，控制显示装置进入节能模式。在显示装置的当前显示画面为动态画面时，对分辨率的要求较高，而在当前显示画面为静态或文字时，对分辨率的要求较低，因此控制模块可以通过主动判断当前显示画面是否为静态或文字，决定显示装置是否需要进入节能模式，其中，静态是指在预设数量的显示帧内各显示帧的画面相同的状态。\n\n[0060]在一种实施例中，控制模块用于，根据获取到的外部输入的进入节能模式指令，控制显示装置进入节能模式。在一些使用场景下，显示装置的使用者会提出低分辨率显示的需求，此时会从外部输入进入节能模式指令，控制模块可以在被动接收到该指令后，控制显示装置进入节能模式。\n\n[0061]如图6所示，像素驱动电路包括数据信号输入单元101、驱动单元102、侦测单元103和存储单元104，数据信号输入单元101用于在第一控制信号的控制下向第一点g输入第一数据信号，驱动单元102用于在第一点g的电位控制下驱动子像素对应的发光器件105发光，侦测单元103通过第二点s与驱动单元102连接，用于在第二控制信号的控制下侦测驱动单元102的阈值电压，存储单元104通过第一点g和第二点s与驱动单元102连接，用于存储驱动单元102的阈值电压Vth，数据信号输入单元101还用于，根据侦测单元103侦测到的阈值电压Vth，向第一点g输入补偿后的第二数据信号。\n\n[0062]具体地，数据信号输入单元101包括第一晶体管T1，第一晶体管T1的栅极接入第一控制信号，第一晶体管T1的第一电极与数据线data连接，第一晶体管T1的第二电极与第一点g连接。其中，第一控制信号由扫描线scan提供。\n\n[0063]驱动单元102包括第二晶体管T2，第二晶体管T2的栅极与第一点g连接，第二晶体管T2的第一电极接入电源高电位信号OVDD，第二晶体管T2的第二电极与发光器件105通过第二点s连接。\n\n[0064]侦测单元103包括第三晶体管T3、第一开关K1和第二开关K2，第三晶体管T3的栅极接入第二控制信号，第三晶体管T3的第一电极连接第二点s，第三晶体管T3的第二电极与第一开关K1的第一动触点、以及第二开关K2的第二动触点连接，第一开关K1的第一静触点连接初始电压信号输入端，第二开关K2的第二静触点连接模数转换器ADC。其中，第二控制信号由感测线sense提供。\n\n[0065]存储单元104包括存储电容C，存储电容C的第一极板与第一点g连接，存储电容C的第二极板与第二点s连接。\n\n[0066]发光器件105的阳极与第二点s连接，发光器件105的阴极接入电源低电位信号OVSS。在显示装置中，每个子像素对应一个发光器件105，发光器件105为微型发光二极管Micro LED。\n\n[0067]在本申请中，各晶体管的第一电极和第二电极，其中一个为源极，另一个为漏极，电源高电位信号VDD的电压值大于电源低电位信号VSS的电压值，数据线data用于输入数据信号Vdata。驱动单元102中，第二晶体管T2为驱动晶体管，驱动单元102的阈值电压即第二晶体管T2的阈值电压Vth。各晶体管可以是N型或P型晶体管，本申请以N型晶体管对像素驱动电路在各阶段的工作原理进行说明。\n\n[0068]在节能模式下的同一显示帧内，一部分像素驱动电路用于驱动子像素发光，即位于显示时间段，另一部分像素驱动电路用于对驱动单元的阈值电压进行侦测，即位于侦测时间段。图7为用于对驱动单元的阈值电压进行侦测的像素驱动电路在侦测时间段各信号的时序图，图8为用于驱动子像素发光的像素驱动电路在显示时间段各信号的时序图，下面结合图7和图8对节能模式下的同一显示帧内两部分像素驱动电路的工作原理进行说明。\n\n[0069]如图7所示，侦测时间段包括初始化阶段t1、充电阶段t2和电压侦测阶段t3。\n\n[0070]在初始化阶段t1，扫描线scan上的第一控制信号为高电位，第一晶体管T1打开，数据线data向第一点g输入高电位的第一数据信号Vdata1，感测线sense上的第二控制信号为高电位，第三晶体管T3打开，侦测单元104在该阶段控制第一开关K1的第一动触点与第一静触点连接，第二开关K2的第二动触点与第二静触点断开，初始电压信号输入端向第二点s输入初始电压VCM。此时，第二晶体管T2的栅极电压为Vdata1，第二晶体管T2的第二电极的电压为VCM。\n\n[0071]在充电阶段t2，第一控制信号为低电位，第一晶体管T1关闭，第二控制信号为低电位，第三晶体管T3关闭，侦测单元104在该阶段控制第一开关K1的第一动触点与第一静触点、以及第二开关K2的第二动触点与第二静触点均断开，此时，第二点s的电压不断上升，直至Vs＝Vdata1-Vth。\n\n[0072]在电压侦测阶段t3，第一控制信号维持低电位，第一晶体管T1关闭，第二控制信号维持高电位，第三晶体管T3打开，第二点s的电压保持在等于Vdata1-Vth的稳定状态，侦测单元104在该阶段控制第一开关K1的第一动触点与第一静触点断开，第二开关K2的第二动触点与第二静触点连接，模数转换器ADC对第二点s的电压进行侦测，产生对应的数据后锁存，侦测的电压值用Vsam表示，且Vsam＝Vdata1-Vth。\n\n[0073]在侦测完成后，由于第一数据信号Vdata1为已知数值，所以可通过用已知的Vdata1减去侦测的电压Vdata1-Vth来获取阈值电压Vth，获取后将阈值电压Vth存储在存储模块104中，然后在下一显示帧，该像素驱动电路进入显示时间段时，对输入的数据信号进行调整，得到第二数据信号Vdata2，以此来实现对驱动单元102的阈值电压补偿。\n\n[0074]如图8所示，显示时间段包括数据写入阶段t4和发光阶段t5。\n\n[0075]在数据写入阶段t4，扫描线scan上的第一控制信号为高电位，第一晶体管T1打开，数据线data向第一点g输入高电位的第二数据信号Vdata2，感测线sense上的第二控制信号为低电位，第三晶体管T3关闭，此时，第一点g的电位Vg＝Vdata2。\n\n[0076]在发光阶段t5，第一控制信号为低电位，第一晶体管T1关闭，第二控制信号维持低电位，第三晶体管T3关闭，由于存储电容C的维持作用，第一点g的电位仍然为Vg＝Vdata2，且第一点g和第二点s的压差Vgs大于Vth，以驱动发光器件105发光。\n\n[0077]由上述分析可知，在同一显示帧内，用于驱动子像素发光的像素驱动电路和用于对驱动单元的阈值电压进行侦测的像素驱动电路，两者的工作过程相互独立。控制模块控制第一像素驱动电路在奇数显示帧内，通过第一驱动单元驱动第一像素单元11中子像素发光，在偶数显示帧内，侦测第一驱动单元的第一阈值电压，并在下一奇数显示帧内，根据侦测到的第一阈值电压对第一驱动单元进行数据补偿；同时，控制第二像素驱动电路在偶数显示帧内，通过第二驱动单元驱动第二像素单元12中子像素发光，在奇数显示帧内，侦测第二驱动单元的第二阈值电压，并在下一偶数显示帧内，根据侦测到的第二阈值电压对第二驱动单元进行数据补偿。第一像素驱动电路和第二像素驱动电路交替工作，使得第一像素单元11和第二像素单元12交替发光、以及交替侦测阈值电压和补偿。通过此种方式，侦测的时间较长，使得能耗降低的同时侦测时间也充足，侦测可以及时进行，后续补偿效果较好，面板均匀性得到提升。\n\n[0078]如图9所示，显示装置的每行子像素中，各子像素的像素驱动电路中数据信号写入单元101均与同一条扫描线scan连接，侦测单元103均与同一条感测线sense连接，其中G(n-1)、G(n)、G(n+1)、G(n+2)分别为第n-1条、第n条、第n+1条、第n+2条扫描线输入的第一控制信号，Sense(n-1)、Sense(n)、Sense(n+1)、Sense(n+2)分别为第n-1条、第n条、第n+1条、第n+2条感测线输入的第二控制信号。此外，每列像素包括3列子像素，3列子像素中，各子像素的像素驱动电路中数据信号写入单元均与同一条数据线data连接。\n\n[0079]在节能模式下，以奇数显示帧为例，各奇数行扫描线scan沿着第一方向Y逐行向各第一像素驱动电路中输入高电位的第一控制信号，将各第一像素驱动电路中的第一晶体管T1逐行打开，各数据线data沿着与第一方向Y垂直的第二方向X逐列向各第二晶体管T2的栅极输入第二数据信号Vdata2。各偶数行扫描线scan沿着第一方向Y逐行向各第二像素驱动电路中输入高电位的第一控制信号，将各第二像素驱动电路中的第一晶体管T1逐行打开，各数据线data沿着与第一方向Y垂直的第二方向X逐列向各第二晶体管T2的栅极输入第一数据信号Vdata1，且写入第一数据信号Vdata1的同时，各偶数行感测线sense沿着第一方向Y逐行向各第二像素驱动电路中输入高电位的第二控制信号，将各第二像素驱动电路中的第三晶体管T3逐行打开，逐行向各第二像素驱动电路中第二晶体管T2的第二电极输入初始电压VCM。\n\n[0080]由于在当前显示帧内，一部分子像素发光，另一部分子像素不发光，为避免两部分子像素相互干扰，需保证侦测阈值电压的像素驱动电路写入第一数据信号Vdata1的时间，与需要驱动子像素发光的像素驱动电路写入第二数据信号Vdata2的时间不重合。\n\n[0081]在一种实施例中，控制模块用于，在节能模式下的同一显示帧内，控制需要侦测阈值电压的像素驱动电路同时写入第一数据信号Vdata1，控制需要驱动子像素发光的像素驱动电路沿第一方向Y逐行写入第二数据信号Vdata2，且写入第一数据信号Vdata1与写入第二数据信号Vdata2的时间不重合。\n\n[0082]如图10所示，为奇数显示帧内各行子像素对应的像素驱动电路中各信号的第一种时序图。取第n-1行、第n+1行等为奇数行子像素，形成第一像素单元11，第n行、第n+2行等为偶数行，形成第二像素单元12，则该显示帧内，第一像素驱动电路需要驱动子像素发光，第二像素驱动电路需要侦测驱动单元的阈值电压。因此，控制模块在第一个数据写入阶段t4，控制第n-1行的第一像素驱动电路写入第二数据信号Vdata2，在第二个数据写入阶段t4，控制第n行的第一像素驱动电路写入第二数据信号Vdata2，依次类推，沿着第一方向Y逐行写入，直至最后一行的第一像素驱动电路写入第二数据信号Vdata2。\n\n[0083]由于第n-1行和第n行之间间隔一行，在逐行输入第二数据信号Vdata2时，第n行写入第二数据信号Vdata2的时间总会落后第n-1行写入第二数据信号Vdata2的时间，且两者的数据写入阶段t4之间有一定的间隔时间，则控制模块可以控制所有的第二像素驱动电路在该间隔时间内，同时写入第一数据信号Vdata1，即将该间隔时间作为第二像素驱动电路的初始化阶段t1。通过此种方式，使得第一像素驱动电路写入第二数据信号Vdata2的时间与第二像素驱动电路写入第一数据信号Vdata1的时间相互错开，以使发光子像素和不发光子像素相互之间不干扰。\n\n[0084]在像素驱动电路处于侦测时间段时，在侦测时间段的充电阶段t2，第二点s的电压需要逐渐抬升至Vs＝Vdata1-Vth，该阶段所用的时长较长，且只有Vs稳定后再进入电压侦测阶段t3，测得的阈值电压Vth的值才是准确的。为保证有足够的时间使第二点s的电压逐渐抬升至稳定，需要在当前显示帧内，尽早向第二像素驱动电路中写入第一数据信号Vdata1，然后经过预设的较长一段时间后，再进入电压侦测阶段t3，此时的阈值电压侦测结构较为准确。因此，在第一像素驱动电路的任意两个数据写入阶段t4的间隔期内，所有第二像素驱动电路均可同时写入第一数据信号Vdata1，但写入第一数据信号Vdata1的时间，在当前帧内越靠前越好，经过预设时长后，所有第二像素驱动电路均进入电压侦测阶段t3，然后就可以依次采集各第二像素驱动电路中第二驱动单元的第二阈值电压。\n\n[0085]在一种实施例中，控制模块用于，在节能模式下的同一显示帧内，控制需要侦测阈值电压的像素驱动电路沿第一方向逐行写入第一数据信号，控制需要驱动子像素发光的像素驱动电路沿第一方向逐行写入第二数据信号，且写入第一数据信号与写入第二数据信号的时间不重合。\n\n[0086]如图11所示，为奇数显示帧内各行子像素对应的像素驱动电路中各信号的第二种时序图。与图10中不同之处在于，本实施例中第二像素驱动电路沿第一方向Y逐行写入第一数据信号Vdata1。由于第一像素驱动电路和第二像素驱动电路均沿第一方向Y逐行写入数据信号，且第一像素驱动电路的数据写入阶段t4与第二像素驱动电路的初始化阶段t1的时间不重合，因此每行子像素对应的第二像素驱动电路的初始化阶段t1，均位于上下相邻两行子像素对应第一像素驱动电路的数据写入阶段t4的间隔时间段内。此时，整个显示装置中，所有扫描线scan可按照常规扫描方式，沿着第一方向Y从第一行至最后一行逐行扫描，依次向奇数行子像素对应的第一像素驱动电路输入第二数据信号Vdata2，向偶数行子像素对应的第二像素驱动电路输入第一数据信号Vdata1。使用此种方式，对现有的各信号时序更改较少，因此更为简单易行。\n\n[0087]在上述实施例中，均以奇数显示帧为例进行说明，在偶数显示帧内只需将第一像素驱动电路和第二像素驱动电路的工作状态调换，各像素驱动电路的工作原理均与奇数显示帧内相同，在此不再赘述。此外，本申请对各像素驱动电路写入数据信号的时间不限于图10和图11对应的实施例，其它使得第一像素驱动电路写入第二数据信号Vdata2的时间与第二像素驱动电路写入第一数据信号Vdata1的时间相互错开的方案，均落入本申请的保护范围。\n\n[0088]在一种实施例中，控制模块还用于，在显示装置未进入节能模式时，控制所有像素驱动电路在显示帧驱动对应子像素发光，在相邻显示帧之间的空白时间段侦测驱动单元的阈值电压。在未进入节能模式时，控制模块控制像素驱动电路按照常规方式，在相邻显示帧之间的空白时间段侦测驱动单元的阈值电压，然后根据该阈值电压进行数据补偿，在下一显示帧内输入补偿后的数据信号，驱动对应子像素发光。通过此种方式，在进入节能模式和未进入节能模式两种状态，均对阈值电压进行了侦测和补偿，且在节能模式的侦测准确性较高，因此对显示装置的整体阈值电压补偿效果得到了提升，面板均匀性也得到提升。\n\n[0089]本申请还提供一种终端，包括显示装置和外壳，其中显示装置为上述任一实施例所述的显示装置。本申请的终端可以同时实现能耗降低和阈值电压补偿准确性提升，面板的均匀性较好。\n\n[0090]根据以上实施例可知：\n\n[0091]本申请实施例提供一种显示装置和终端，显示装置包括多个子像素、像素驱动电路和控制模块，多个子像素在显示装置中阵列排布，形成多个像素单元，像素单元包括沿第一方向交替排列的第一像素单元和第二像素单元，第一像素单元和第二像素单元均包括至少一行子像素；像素驱动电路用于通过驱动单元驱动子像素发光，像素驱动电路包括通过第一驱动单元驱动第一像素单元中子像素发光的第一像素驱动电路、以及通过第二驱动单元驱动第二像素单元中子像素发光的第二像素驱动电路；控制模块用于根据获取到的控制参数，控制显示装置进入节能模式，在节能模式中，控制模块用于，控制第一像素驱动电路在奇数显示帧内，通过第一驱动单元驱动第一像素单元中子像素发光，在偶数显示帧内，侦测第一驱动单元的第一阈值电压，并在下一奇数显示帧内，根据侦测到的第一阈值电压对第一驱动单元进行数据补偿，且控制第二像素驱动电路在偶数显示帧内，通过第二驱动单元驱动第二像素单元中子像素发光，在奇数显示帧内，侦测第二驱动单元的第二阈值电压，并在下一偶数显示帧内，根据侦测到的第二阈值电压对第二驱动单元进行数据补偿。本申请的显示装置在特定条件下进入节能模式，且在节能模式下控制当前显示帧内一部分子像素发光，另一部分子像素对应的像素驱动电路进行阈值电压侦测，由于显示帧的时长大于相邻显示帧之间的空白时间段的时长，使得能耗降低的同时侦测时间也充足，侦测可以及时进行，后续补偿效果较好，面板均匀性得到提升。\n\n[0092]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0093]以上对本申请实施例所提供的一种显示装置和终端进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种显示装置和终端。\n\n背景技术\n\n[0002]在现有的显示装置中，各像素通过像素驱动电路进行驱动发光，由于各种原因像素驱动电路中驱动晶体管的阈值电压Vth会产生漂移，因此需要对驱动晶体管的Vth进行侦测补偿，以提升面板的均匀性。现有的补偿方式为在相邻显示帧之间的空白时间段进行侦测，然后在下一显示帧时进行数据补偿，然而，侦测需要花费的时间较长，而空白时间段时长有限，尤其在大尺寸高刷新率的情况下，侦测时间较短，侦测不能及时进行，导致后续补偿效果不佳，面板均匀性难以提升。\n\n[0003]因此，现有显示装置存在阈值电压补偿效果不佳的技术问题，需要改进。\n\n发明内容\n\n[0004]本申请实施例提供一种显示装置和终端，用以缓解现有显示装置中阈值电压补偿效果不佳的技术问题。\n\n[0005]本申请实施例提供一种显示装置，包括：\n\n[0006]多个子像素，所述多个子像素在所述显示装置中阵列排布，形成多个像素单元，所述像素单元包括沿第一方向交替排列的第一像素单元和第二像素单元，所述第一像素单元和所述第二像素单元均包括至少一行子像素；\n\n[0007]像素驱动电路，用于通过驱动单元驱动所述子像素发光，所述像素驱动电路包括通过第一驱动单元驱动所述第一像素单元中子像素发光的第一像素驱动电路、以及通过第二驱动单元驱动所述第二像素单元中子像素发光的第二像素驱动电路；\n\n[0008]控制模块，用于根据获取到的控制参数，控制所述显示装置进入节能模式，在所述节能模式中，所述控制模块用于，控制所述第一像素驱动电路在奇数显示帧内，通过所述第一驱动单元驱动所述第一像素单元中子像素发光，在偶数显示帧内，侦测所述第一驱动单元的第一阈值电压，并在下一奇数显示帧内，根据侦测到的所述第一阈值电压对所述第一驱动单元进行数据补偿，且控制所述第二像素驱动电路在偶数显示帧内，通过所述第二驱动单元驱动所述第二像素单元中子像素发光，在奇数显示帧内，侦测所述第二驱动单元的第二阈值电压，并在下一偶数显示帧内，根据侦测到的所述第二阈值电压对所述第二驱动单元进行数据补偿。\n\n[0009]在本申请的显示装置中，所述控制模块用于，根据获取到的当前显示画面为静态或文字的信息，控制所述显示装置进入节能模式。\n\n[0010]在本申请的显示装置中，所述控制模块用于，根据获取到的外部输入的进入节能模式指令，控制所述显示装置进入节能模式。\n\n[0011]在本申请的显示装置中，所述像素驱动电路包括数据信号输入单元、所述驱动单元、侦测单元和存储单元，所述数据信号输入单元用于在第一控制信号的控制下向第一点输入第一数据信号，所述驱动单元用于在所述第一点的电位控制下驱动子像素对应的发光器件发光，所述侦测单元通过第二点与所述驱动单元连接，用于在第二控制信号的控制下侦测所述驱动单元的阈值电压，所述存储单元通过第一点和第二点与所述驱动单元连接，用于存储所述驱动单元的阈值电压，所述数据信号输入单元还用于，根据所述侦测单元侦测到的阈值电压，向所述第一点输入补偿后的第二数据信号。\n\n[0012]在本申请的显示装置中，所述数据信号输入单元包括第一晶体管，所述第一晶体管的栅极接入所述第一控制信号，所述第一晶体管的第一电极与数据线连接，所述第一晶体管的第二电极与所述第一点连接。\n\n[0013]在本申请的显示装置中，所述驱动单元包括第二晶体管，所述第二晶体管的栅极与所述第一点连接，所述第二晶体管的第一电极接入电源高电位信号，所述第二晶体管的第二电极与所述发光器件通过所述第二点连接。\n\n[0014]在本申请的显示装置中，所述侦测单元包括第三晶体管、第一开关和第二开关，所述第三晶体管的栅极接入所述第二控制信号，所述第三晶体管的第一电极连接所述第二点，所述第三晶体管的第二电极与所述第一开关的第一动触点、以及所述第二开关的第二动触点连接，所述第一开关的第一静触点连接初始电压信号输入端，所述第二开关的第二静触点连接模数转换器。\n\n[0015]在本申请的显示装置中，所述存储单元包括存储电容，所述存储电容的第一极板与所述第一点连接，所述存储电容的第二极板与所述第二点连接。\n\n[0016]在本申请的显示装置中，所述发光器件的阳极与所述第二点连接，所述发光器件的阴极接入电源低电位信号。\n\n[0017]在本申请的显示装置中，所述发光器件为微型发光二极管。\n\n[0018]在本申请的显示装置中，在所述节能模式下，所述侦测单元用于，在侦测时间段的初始化阶段，控制所述第一动触点与所述第一静触点连接，所述第二动触点与所述第二静触点断开，在所述侦测时间段的充电阶段，控制所述第一动触点与第一静触点、以及所述第二动触点与所述第二静触点均断开，在所述侦测时间段的电压侦测阶段，控制所述第一动触点与第一静触点断开，所述第二动触点与所述第二静触点连接。\n\n[0019]在本申请的显示装置中，所述控制模块用于，在所述节能模式下的同一显示帧内，控制需要侦测阈值电压的像素驱动电路同时写入第一数据信号，控制需要驱动子像素发光的像素驱动电路沿所述第一方向逐行写入第二数据信号，且写入第一数据信号与写入第二数据信号的时间不重合。\n\n[0020]在本申请的显示装置中，所述控制模块用于，在所述节能模式下的同一显示帧内，控制需要侦测阈值电压的像素驱动电路沿所述第一方向逐行写入第一数据信号，控制需要驱动子像素发光的像素驱动电路沿所述第一方向逐行写入第二数据信号，且写入第一数据信号与写入第二数据信号的时间不重合。在本申请的显示装置中，所述控制模块还用于，在所述显示装置未进入节能模式时，控制所有像素驱动电路在显示帧驱动对应子像素发光，在相邻显示帧之间的空白时间段侦测驱动单元的阈值电压。\n\n[0021]本申请还提供一种终端，包括显示装置和外壳，所述显示装置为上述任一项所述的显示装置。\n\n[0022]有益效果：本申请实施例提供一种显示装置和终端，显示装置包括多个子像素、像素驱动电路和控制模块，所述多个子像素在所述显示装置中阵列排布，形成多个像素单元，所述像素单元包括沿第一方向交替排列的第一像素单元和第二像素单元，所述第一像素单元和所述第二像素单元均包括至少一行子像素；像素驱动电路，用于通过驱动单元驱动所述子像素发光，所述像素驱动电路包括通过第一驱动单元驱动所述第一像素单元中子像素发光的第一像素驱动电路、以及通过第二驱动单元驱动所述第二像素单元中子像素发光的第二像素驱动电路；控制模块，用于根据获取到的控制参数，控制所述显示装置进入节能模式，在所述节能模式中，所述控制模块用于，控制所述第一像素驱动电路在奇数显示帧内，通过所述第一驱动单元驱动所述第一像素单元中子像素发光，在偶数显示帧内，侦测所述第一驱动单元的第一阈值电压，并在下一奇数显示帧内，根据侦测到的所述第一阈值电压对所述第一驱动单元进行数据补偿，且控制所述第二像素驱动电路在偶数显示帧内，通过所述第二驱动单元驱动所述第二像素单元中子像素发光，在奇数显示帧内，侦测所述第二驱动单元的第二阈值电压，并在下一偶数显示帧内，根据侦测到的所述第二阈值电压对所述第二驱动单元进行数据补偿。本申请的显示装置在特定条件下进入节能模式，且在节能模式下控制当前显示帧内一部分子像素发光，另一部分子像素对应的像素驱动电路进行阈值电压侦测，由于显示帧的时长大于相邻显示帧之间的空白时间段的时长，使得能耗降低的同时侦测时间也充足，侦测可以及时进行，后续补偿效果较好，面板均匀性得到提升。\n\n附图说明\n\n[0023]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0024]图1为本申请实施例提供的显示装置中像素单元的第一种排列示意图。\n\n[0025]图2为本申请实施例提供的显示装置中像素单元的第二种排列示意图。\n\n[0026]图3为图1的像素单元中各子像素在奇数显示帧内的发光情况示意图。\n\n[0027]图4为图1的像素单元中各子像素在偶数显示帧内的发光情况示意图。\n\n[0028]图5为本申请实施例提供的显示装置实现能耗降低和侦测的实施过程示意图。\n\n[0029]图6为本申请实施例提供的显示装置中像素驱动电路的结构示意图。\n\n[0030]图7为本申请实施例中用于对驱动单元的阈值电压进行侦测的像素驱动电路在侦测时间段各信号的时序图。\n\n[0031]图8为本申请实施例中用于驱动子像素发光的像素驱动电路在显示时间段各信号的时序图。\n\n[0032]图9为本申请实施例提供的显示装置中像素驱动电路与各信号线的连接示意图。\n\n[0033]图10为本申请实施例提供的显示装置中，奇数显示帧内各行子像素对应的像素驱动电路中各信号的第一种时序图。\n\n[0034]图11为本申请实施例提供的显示装置中，奇数显示帧内各行子像素对应的像素驱动电路中各信号的第二种时序图。\n\n具体实施方式\n\n[0035]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0036]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0037]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0038]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0039]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0040]本申请实施例提供一种显示装置和终端，用以缓解现有显示装置中阈值电压补偿效果不佳的技术问题。\n\n[0041]本申请实施例提供一种显示装置，包括多个子像素、像素驱动电路和控制模块；多个子像素在显示装置中阵列排布，形成多个像素单元，像素单元包括沿第一方向交替排列的第一像素单元和第二像素单元，第一像素单元和第二像素单元均包括至少一行子像素；像素驱动电路用于通过驱动单元驱动子像素发光，像素驱动电路包括通过第一驱动单元驱动第一像素单元中子像素发光的第一像素驱动电路、以及通过第二驱动单元驱动第二像素单元中子像素发光的第二像素驱动电路；控制模块用于根据获取到的控制参数，控制显示装置进入节能模式，在节能模式中，控制模块用于，控制第一像素驱动电路在奇数显示帧内，通过第一驱动单元驱动第一像素单元中子像素发光，在偶数显示帧内，侦测第一驱动单元的第一阈值电压，并在下一奇数显示帧内，根据侦测到的第一阈值电压对第一驱动单元进行数据补偿，且控制第二像素驱动电路在偶数显示帧内，通过第二驱动单元驱动第二像素单元中子像素发光，在奇数显示帧内，侦测第二驱动单元的第二阈值电压，并在下一偶数显示帧内，根据侦测到的第二阈值电压对第二驱动单元进行数据补偿。\n\n[0042]如图1所示，显示装置中包括阵列排布的多个子像素，子像素包括红色子像素R、绿色子像素G和蓝色子像素B，红色子像素R、绿色子像素G和蓝色子像素B共同形成一个像素。各子像素形成多个像素单元，像素单元包括沿第一方向Y交替排列的第一像素单元11和第二像素单元12，第一像素单元11和第二像素单元12均包括至少一行子像素。在本实施例中，第一方向Y为纵向的列的方向，第一像素单元11包括一行子像素，第二素单元12包括一行子像素，由于两者沿第一方向Y交替排列，第一像素单元11中的子像素均为奇数行子像素，第二像素单元12中子像素均为偶数行子像素，但本申请不以此为限，第一像素单元11和第二像素单元12的位置可以互换，此时第一像素单元11中的子像素均为偶数行子像素，第二像素单元12中子像素均为奇数行子像素。\n\n[0043]在一种实施例中，如图2所示，第一像素单元11中设置有2行子像素，第二像素单元12中设置有1行子像素，第一像素单元11和第二像素单元12交替排列。即，第一像素单元11和第二像素单元12中子像素的行数均可以多于一行，且第一像素单元11和第二像素单元12中子像素的行数可以相等，也可以不相等，本领域的技术人员可根据需要，合理设置各像素单元中子像素的行数。为方便描述，本申请实施例中均以图1中结构为例进行说明。\n\n[0044]显示装置中的各子像素，均由像素驱动电路中的驱动单元进行驱动发光，且每个子像素均对应一个像素驱动电路。像素驱动电路包括第一像素驱动电路和第二像素驱动电路，其中第一像素驱动电路通过第一驱动单元驱动第一像素单元中子像素发光，第二像素驱动电路通过第二驱动单元驱动第二像素单元中子像素发光。\n\n[0045]显示装置包括显示面板和与显示面板绑定的驱动IC，子像素和像素驱动电路设置在显示面板中，驱动IC中设置有控制模块，控制模块用于根据获取到的控制参数，控制显示装置进入节能模式。\n\n[0046]本申请的显示装置中，子像素对应的发光器件为Micro LED，单个Micro LED的尺寸较小，约1um-100um，Micro LED组成高分辨率的显示面板，相对于其他种类的显示面板，本申请的显示面板在相同尺寸内包含更多的像素，对于大尺寸面板功耗明显增加，而由于Micro LED显示面板的像素密度(Pixels Per Inch，PPI)较大，以4K面板为例，若只使用其中的一半像素用来显示，显示效果是可以做到与普通2K液晶面板一致的，此时分辨率有所下降，但仍可以保证一定的显示效果。因此，在一些对于分辨率要求不高的显示场景，控制模块可以在获取到相应的控制参数后，控制显示装置进入节能模式，使部分子像素发光，另一部分子像素不发光，以此来降低显示装置的功耗。\n\n[0047]在节能模式中，为保证一定的显示效果，发光和不发光的子像素需要交替排列，才能最大程度保证视觉效果，因此在节能模式下，控制模块控制显示装置的第一像素单元11和第二像素单元12进行交替发光，具体地，控制第一像素驱动电路在奇数显示帧内，通过第一驱动单元驱动第一像素单元11中子像素发光，且控制第二像素驱动电路在偶数显示帧内，通过第二驱动单元驱动第二像素单元12中子像素发光。则，在奇数显示帧内，如图3所示，第一像素单元11中子像素发光，第二像素单元12中子像素不发光，在偶数显示帧内，如图4所示，第一像素单元11中子像素不发光，第二像素单元12中子像素发光。其中，从第一次出现子像素部分发光的显示帧开始，到最后一次出现子像素部分发光的显示帧结束，该时间段为节能模式的时间段，该时间段内所有显示帧从第一帧计算，所有排列在奇数位的为奇数显示帧，所有排列在偶数位的为偶数显示帧。\n\n[0048]像素驱动电路通过驱动单元驱动各子像素发光，在像素驱动电路工作一段时间后，驱动单元的阈值电压会产生漂移现象，因此需要对驱动单元的阈值电压进行侦测，然后进行数据补偿。在节能模式下，由于偶数显示帧内第一像素单元11中子像素不需要发光，控制模块可控制第一像素驱动电路在该偶数显示帧内，侦测第一驱动单元的第一阈值电压，并在下一奇数显示帧内，根据侦测到的第一阈值电压对第一驱动单元进行数据补偿，同时，由于奇数显示帧内第二像素单元12中子像素不需要发光，控制模块可控制第二像素驱动电路在该奇数显示帧内，侦测第二驱动单元的第二阈值电压，并在下一偶数显示帧内，根据侦测到的第二阈值电压对第二驱动单元进行数据补偿。\n\n[0049]现有技术中对驱动单元阈值电压的补偿方式为，在相邻显示帧之间的空白时间段进行侦测，然后在下一显示帧时进行数据补偿，然而，侦测需要花费的时间较长，而空白时间段时长有限，尤其在大尺寸高刷新率的情况下，侦测时间较短，侦测不能及时进行，导致后续补偿效果不佳，面板均匀性难以提升。\n\n[0050]本申请的显示装置在特定条件下进入节能模式，且在节能模式下控制当前显示帧内一部分子像素发光，另一部分子像素对应的像素驱动电路进行阈值电压侦测，由于显示帧的时长大于相邻显示帧之间的空白时间段的时长，使得能耗降低的同时侦测时间也充足，侦测可以及时进行，后续补偿效果较好，面板均匀性得到提升。\n\n[0051]图5示出了显示装置实现能耗降低和侦测的实施过程，包括以下步骤：\n\n[0052]S10：获得控制参数。控制模块首先获得控制参数，然后根据控制参数，判断是否需要进入节能模式，\n\n[0053]S20：进入节能模式。控制模块根据控制参数，在不需要进入节能模式时，继续保持获取控制参数的状态，当需要进入节能模式时，则进入节能模式，在节能模式下，控制模块控制各像素驱动电路实现不同功能，使得各子像素呈现两种状态。\n\n[0054]S21：低分辨率显示。控制模块控制像素驱动电路在当前显示帧内，驱动部分子像素发光，部分子像素不发光，且发光与不发光的子像素以一行或多行为单位交替排列，使得显示装置进入低分辨率显示状态。\n\n[0055]S22：对驱动晶体管进行侦测和补偿。控制模块控制不发光子像素的像素驱动电路，在当前显示帧内，对其驱动晶体管的阈值电压进行侦测和补偿。\n\n[0056]当切换到下一显示帧时，S21和S22中各子像素的状态互换，原来发光的子像素转换为不发光，原来不发光的子像素转换为发光，相应地，对不发光子像素对应的像素驱动电路中的驱动晶体管进行阈值电压侦测和补偿。\n\n[0057]通过上述步骤，控制模块在节能模式下控制当前显示帧内一部分子像素发光，另一部分子像素对应的像素驱动电路进行阈值电压侦测，由于显示帧的时长大于相邻显示帧之间的空白时间段的时长，使得能耗降低的同时侦测时间也充足，侦测可以及时进行，后续补偿效果较好，面板均匀性得到提升。\n\n[0058]控制模块根据获取到的控制参数，控制显示装置进入节能模式，其中获取控制参数可以有多种方式。\n\n[0059]在一种实施例中，控制模块用于，根据获取到的当前显示画面为静态或文字的信息，控制显示装置进入节能模式。在显示装置的当前显示画面为动态画面时，对分辨率的要求较高，而在当前显示画面为静态或文字时，对分辨率的要求较低，因此控制模块可以通过主动判断当前显示画面是否为静态或文字，决定显示装置是否需要进入节能模式，其中，静态是指在预设数量的显示帧内各显示帧的画面相同的状态。\n\n[0060]在一种实施例中，控制模块用于，根据获取到的外部输入的进入节能模式指令，控制显示装置进入节能模式。在一些使用场景下，显示装置的使用者会提出低分辨率显示的需求，此时会从外部输入进入节能模式指令，控制模块可以在被动接收到该指令后，控制显示装置进入节能模式。\n\n[0061]如图6所示，像素驱动电路包括数据信号输入单元101、驱动单元102、侦测单元103和存储单元104，数据信号输入单元101用于在第一控制信号的控制下向第一点g输入第一数据信号，驱动单元102用于在第一点g的电位控制下驱动子像素对应的发光器件105发光，侦测单元103通过第二点s与驱动单元102连接，用于在第二控制信号的控制下侦测驱动单元102的阈值电压，存储单元104通过第一点g和第二点s与驱动单元102连接，用于存储驱动单元102的阈值电压Vth，数据信号输入单元101还用于，根据侦测单元103侦测到的阈值电压Vth，向第一点g输入补偿后的第二数据信号。\n\n[0062]具体地，数据信号输入单元101包括第一晶体管T1，第一晶体管T1的栅极接入第一控制信号，第一晶体管T1的第一电极与数据线data连接，第一晶体管T1的第二电极与第一点g连接。其中，第一控制信号由扫描线scan提供。\n\n[0063]驱动单元102包括第二晶体管T2，第二晶体管T2的栅极与第一点g连接，第二晶体管T2的第一电极接入电源高电位信号OVDD，第二晶体管T2的第二电极与发光器件105通过第二点s连接。\n\n[0064]侦测单元103包括第三晶体管T3、第一开关K1和第二开关K2，第三晶体管T3的栅极接入第二控制信号，第三晶体管T3的第一电极连接第二点s，第三晶体管T3的第二电极与第一开关K1的第一动触点、以及第二开关K2的第二动触点连接，第一开关K1的第一静触点连接初始电压信号输入端，第二开关K2的第二静触点连接模数转换器ADC。其中，第二控制信号由感测线sense提供。\n\n[0065]存储单元104包括存储电容C，存储电容C的第一极板与第一点g连接，存储电容C的第二极板与第二点s连接。\n\n[0066]发光器件105的阳极与第二点s连接，发光器件105的阴极接入电源低电位信号OVSS。在显示装置中，每个子像素对应一个发光器件105，发光器件105为微型发光二极管Micro LED。\n\n[0067]在本申请中，各晶体管的第一电极和第二电极，其中一个为源极，另一个为漏极，电源高电位信号VDD的电压值大于电源低电位信号VSS的电压值，数据线data用于输入数据信号Vdata。驱动单元102中，第二晶体管T2为驱动晶体管，驱动单元102的阈值电压即第二晶体管T2的阈值电压Vth。各晶体管可以是N型或P型晶体管，本申请以N型晶体管对像素驱动电路在各阶段的工作原理进行说明。\n\n[0068]在节能模式下的同一显示帧内，一部分像素驱动电路用于驱动子像素发光，即位于显示时间段，另一部分像素驱动电路用于对驱动单元的阈值电压进行侦测，即位于侦测时间段。图7为用于对驱动单元的阈值电压进行侦测的像素驱动电路在侦测时间段各信号的时序图，图8为用于驱动子像素发光的像素驱动电路在显示时间段各信号的时序图，下面结合图7和图8对节能模式下的同一显示帧内两部分像素驱动电路的工作原理进行说明。\n\n[0069]如图7所示，侦测时间段包括初始化阶段t1、充电阶段t2和电压侦测阶段t3。\n\n[0070]在初始化阶段t1，扫描线scan上的第一控制信号为高电位，第一晶体管T1打开，数据线data向第一点g输入高电位的第一数据信号Vdata1，感测线sense上的第二控制信号为高电位，第三晶体管T3打开，侦测单元104在该阶段控制第一开关K1的第一动触点与第一静触点连接，第二开关K2的第二动触点与第二静触点断开，初始电压信号输入端向第二点s输入初始电压VCM。此时，第二晶体管T2的栅极电压为Vdata1，第二晶体管T2的第二电极的电压为VCM。\n\n[0071]在充电阶段t2，第一控制信号为低电位，第一晶体管T1关闭，第二控制信号为低电位，第三晶体管T3关闭，侦测单元104在该阶段控制第一开关K1的第一动触点与第一静触点、以及第二开关K2的第二动触点与第二静触点均断开，此时，第二点s的电压不断上升，直至Vs＝Vdata1-Vth。\n\n[0072]在电压侦测阶段t3，第一控制信号维持低电位，第一晶体管T1关闭，第二控制信号维持高电位，第三晶体管T3打开，第二点s的电压保持在等于Vdata1-Vth的稳定状态，侦测单元104在该阶段控制第一开关K1的第一动触点与第一静触点断开，第二开关K2的第二动触点与第二静触点连接，模数转换器ADC对第二点s的电压进行侦测，产生对应的数据后锁存，侦测的电压值用Vsam表示，且Vsam＝Vdata1-Vth。\n\n[0073]在侦测完成后，由于第一数据信号Vdata1为已知数值，所以可通过用已知的Vdata1减去侦测的电压Vdata1-Vth来获取阈值电压Vth，获取后将阈值电压Vth存储在存储模块104中，然后在下一显示帧，该像素驱动电路进入显示时间段时，对输入的数据信号进行调整，得到第二数据信号Vdata2，以此来实现对驱动单元102的阈值电压补偿。\n\n[0074]如图8所示，显示时间段包括数据写入阶段t4和发光阶段t5。\n\n[0075]在数据写入阶段t4，扫描线scan上的第一控制信号为高电位，第一晶体管T1打开，数据线data向第一点g输入高电位的第二数据信号Vdata2，感测线sense上的第二控制信号为低电位，第三晶体管T3关闭，此时，第一点g的电位Vg＝Vdata2。\n\n[0076]在发光阶段t5，第一控制信号为低电位，第一晶体管T1关闭，第二控制信号维持低电位，第三晶体管T3关闭，由于存储电容C的维持作用，第一点g的电位仍然为Vg＝Vdata2，且第一点g和第二点s的压差Vgs大于Vth，以驱动发光器件105发光。\n\n[0077]由上述分析可知，在同一显示帧内，用于驱动子像素发光的像素驱动电路和用于对驱动单元的阈值电压进行侦测的像素驱动电路，两者的工作过程相互独立。控制模块控制第一像素驱动电路在奇数显示帧内，通过第一驱动单元驱动第一像素单元11中子像素发光，在偶数显示帧内，侦测第一驱动单元的第一阈值电压，并在下一奇数显示帧内，根据侦测到的第一阈值电压对第一驱动单元进行数据补偿；同时，控制第二像素驱动电路在偶数显示帧内，通过第二驱动单元驱动第二像素单元12中子像素发光，在奇数显示帧内，侦测第二驱动单元的第二阈值电压，并在下一偶数显示帧内，根据侦测到的第二阈值电压对第二驱动单元进行数据补偿。第一像素驱动电路和第二像素驱动电路交替工作，使得第一像素单元11和第二像素单元12交替发光、以及交替侦测阈值电压和补偿。通过此种方式，侦测的时间较长，使得能耗降低的同时侦测时间也充足，侦测可以及时进行，后续补偿效果较好，面板均匀性得到提升。\n\n[0078]如图9所示，显示装置的每行子像素中，各子像素的像素驱动电路中数据信号写入单元101均与同一条扫描线scan连接，侦测单元103均与同一条感测线sense连接，其中G(n-1)、G(n)、G(n+1)、G(n+2)分别为第n-1条、第n条、第n+1条、第n+2条扫描线输入的第一控制信号，Sense(n-1)、Sense(n)、Sense(n+1)、Sense(n+2)分别为第n-1条、第n条、第n+1条、第n+2条感测线输入的第二控制信号。此外，每列像素包括3列子像素，3列子像素中，各子像素的像素驱动电路中数据信号写入单元均与同一条数据线data连接。\n\n[0079]在节能模式下，以奇数显示帧为例，各奇数行扫描线scan沿着第一方向Y逐行向各第一像素驱动电路中输入高电位的第一控制信号，将各第一像素驱动电路中的第一晶体管T1逐行打开，各数据线data沿着与第一方向Y垂直的第二方向X逐列向各第二晶体管T2的栅极输入第二数据信号Vdata2。各偶数行扫描线scan沿着第一方向Y逐行向各第二像素驱动电路中输入高电位的第一控制信号，将各第二像素驱动电路中的第一晶体管T1逐行打开，各数据线data沿着与第一方向Y垂直的第二方向X逐列向各第二晶体管T2的栅极输入第一数据信号Vdata1，且写入第一数据信号Vdata1的同时，各偶数行感测线sense沿着第一方向Y逐行向各第二像素驱动电路中输入高电位的第二控制信号，将各第二像素驱动电路中的第三晶体管T3逐行打开，逐行向各第二像素驱动电路中第二晶体管T2的第二电极输入初始电压VCM。\n\n[0080]由于在当前显示帧内，一部分子像素发光，另一部分子像素不发光，为避免两部分子像素相互干扰，需保证侦测阈值电压的像素驱动电路写入第一数据信号Vdata1的时间，与需要驱动子像素发光的像素驱动电路写入第二数据信号Vdata2的时间不重合。\n\n[0081]在一种实施例中，控制模块用于，在节能模式下的同一显示帧内，控制需要侦测阈值电压的像素驱动电路同时写入第一数据信号Vdata1，控制需要驱动子像素发光的像素驱动电路沿第一方向Y逐行写入第二数据信号Vdata2，且写入第一数据信号Vdata1与写入第二数据信号Vdata2的时间不重合。\n\n[0082]如图10所示，为奇数显示帧内各行子像素对应的像素驱动电路中各信号的第一种时序图。取第n-1行、第n+1行等为奇数行子像素，形成第一像素单元11，第n行、第n+2行等为偶数行，形成第二像素单元12，则该显示帧内，第一像素驱动电路需要驱动子像素发光，第二像素驱动电路需要侦测驱动单元的阈值电压。因此，控制模块在第一个数据写入阶段t4，控制第n-1行的第一像素驱动电路写入第二数据信号Vdata2，在第二个数据写入阶段t4，控制第n行的第一像素驱动电路写入第二数据信号Vdata2，依次类推，沿着第一方向Y逐行写入，直至最后一行的第一像素驱动电路写入第二数据信号Vdata2。\n\n[0083]由于第n-1行和第n行之间间隔一行，在逐行输入第二数据信号Vdata2时，第n行写入第二数据信号Vdata2的时间总会落后第n-1行写入第二数据信号Vdata2的时间，且两者的数据写入阶段t4之间有一定的间隔时间，则控制模块可以控制所有的第二像素驱动电路在该间隔时间内，同时写入第一数据信号Vdata1，即将该间隔时间作为第二像素驱动电路的初始化阶段t1。通过此种方式，使得第一像素驱动电路写入第二数据信号Vdata2的时间与第二像素驱动电路写入第一数据信号Vdata1的时间相互错开，以使发光子像素和不发光子像素相互之间不干扰。\n\n[0084]在像素驱动电路处于侦测时间段时，在侦测时间段的充电阶段t2，第二点s的电压需要逐渐抬升至Vs＝Vdata1-Vth，该阶段所用的时长较长，且只有Vs稳定后再进入电压侦测阶段t3，测得的阈值电压Vth的值才是准确的。为保证有足够的时间使第二点s的电压逐渐抬升至稳定，需要在当前显示帧内，尽早向第二像素驱动电路中写入第一数据信号Vdata1，然后经过预设的较长一段时间后，再进入电压侦测阶段t3，此时的阈值电压侦测结构较为准确。因此，在第一像素驱动电路的任意两个数据写入阶段t4的间隔期内，所有第二像素驱动电路均可同时写入第一数据信号Vdata1，但写入第一数据信号Vdata1的时间，在当前帧内越靠前越好，经过预设时长后，所有第二像素驱动电路均进入电压侦测阶段t3，然后就可以依次采集各第二像素驱动电路中第二驱动单元的第二阈值电压。\n\n[0085]在一种实施例中，控制模块用于，在节能模式下的同一显示帧内，控制需要侦测阈值电压的像素驱动电路沿第一方向逐行写入第一数据信号，控制需要驱动子像素发光的像素驱动电路沿第一方向逐行写入第二数据信号，且写入第一数据信号与写入第二数据信号的时间不重合。\n\n[0086]如图11所示，为奇数显示帧内各行子像素对应的像素驱动电路中各信号的第二种时序图。与图10中不同之处在于，本实施例中第二像素驱动电路沿第一方向Y逐行写入第一数据信号Vdata1。由于第一像素驱动电路和第二像素驱动电路均沿第一方向Y逐行写入数据信号，且第一像素驱动电路的数据写入阶段t4与第二像素驱动电路的初始化阶段t1的时间不重合，因此每行子像素对应的第二像素驱动电路的初始化阶段t1，均位于上下相邻两行子像素对应第一像素驱动电路的数据写入阶段t4的间隔时间段内。此时，整个显示装置中，所有扫描线scan可按照常规扫描方式，沿着第一方向Y从第一行至最后一行逐行扫描，依次向奇数行子像素对应的第一像素驱动电路输入第二数据信号Vdata2，向偶数行子像素对应的第二像素驱动电路输入第一数据信号Vdata1。使用此种方式，对现有的各信号时序更改较少，因此更为简单易行。\n\n[0087]在上述实施例中，均以奇数显示帧为例进行说明，在偶数显示帧内只需将第一像素驱动电路和第二像素驱动电路的工作状态调换，各像素驱动电路的工作原理均与奇数显示帧内相同，在此不再赘述。此外，本申请对各像素驱动电路写入数据信号的时间不限于图10和图11对应的实施例，其它使得第一像素驱动电路写入第二数据信号Vdata2的时间与第二像素驱动电路写入第一数据信号Vdata1的时间相互错开的方案，均落入本申请的保护范围。\n\n[0088]在一种实施例中，控制模块还用于，在显示装置未进入节能模式时，控制所有像素驱动电路在显示帧驱动对应子像素发光，在相邻显示帧之间的空白时间段侦测驱动单元的阈值电压。在未进入节能模式时，控制模块控制像素驱动电路按照常规方式，在相邻显示帧之间的空白时间段侦测驱动单元的阈值电压，然后根据该阈值电压进行数据补偿，在下一显示帧内输入补偿后的数据信号，驱动对应子像素发光。通过此种方式，在进入节能模式和未进入节能模式两种状态，均对阈值电压进行了侦测和补偿，且在节能模式的侦测准确性较高，因此对显示装置的整体阈值电压补偿效果得到了提升，面板均匀性也得到提升。\n\n[0089]本申请还提供一种终端，包括显示装置和外壳，其中显示装置为上述任一实施例所述的显示装置。本申请的终端可以同时实现能耗降低和阈值电压补偿准确性提升，面板的均匀性较好。\n\n[0090]根据以上实施例可知：\n\n[0091]本申请实施例提供一种显示装置和终端，显示装置包括多个子像素、像素驱动电路和控制模块，多个子像素在显示装置中阵列排布，形成多个像素单元，像素单元包括沿第一方向交替排列的第一像素单元和第二像素单元，第一像素单元和第二像素单元均包括至少一行子像素；像素驱动电路用于通过驱动单元驱动子像素发光，像素驱动电路包括通过第一驱动单元驱动第一像素单元中子像素发光的第一像素驱动电路、以及通过第二驱动单元驱动第二像素单元中子像素发光的第二像素驱动电路；控制模块用于根据获取到的控制参数，控制显示装置进入节能模式，在节能模式中，控制模块用于，控制第一像素驱动电路在奇数显示帧内，通过第一驱动单元驱动第一像素单元中子像素发光，在偶数显示帧内，侦测第一驱动单元的第一阈值电压，并在下一奇数显示帧内，根据侦测到的第一阈值电压对第一驱动单元进行数据补偿，且控制第二像素驱动电路在偶数显示帧内，通过第二驱动单元驱动第二像素单元中子像素发光，在奇数显示帧内，侦测第二驱动单元的第二阈值电压，并在下一偶数显示帧内，根据侦测到的第二阈值电压对第二驱动单元进行数据补偿。本申请的显示装置在特定条件下进入节能模式，且在节能模式下控制当前显示帧内一部分子像素发光，另一部分子像素对应的像素驱动电路进行阈值电压侦测，由于显示帧的时长大于相邻显示帧之间的空白时间段的时长，使得能耗降低的同时侦测时间也充足，侦测可以及时进行，后续补偿效果较好，面板均匀性得到提升。\n\n[0092]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0093]以上对本申请实施例所提供的一种显示装置和终端进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10777, 23831, '技术领域\n\n[0001]本申请涉及显示设备技术领域，尤其涉及一种显示面板和显示装置。\n\n背景技术\n\n[0002]在中小尺寸显示领域，全面屏技术成为当前的重点研发方向，换言之，如何通过相关技术的开发实现人机交互界面的屏占比最大化，乃是当前的研发重点。\n\n[0003]第一代全面屏技术主要集中于屏幕尺寸比例由16:9变化为18+：9，第二代全面屏则是进一步地压缩屏幕上下左右的边界，甚至采用柔性折叠技术最大化可视面积，而近期全面屏的另一个动向则是如何将显示终端的指纹识别、摄像头、面部识别、距离传感等光学传感器件进一步地融合进显示屏的有效显示区(Active Area；AA区)，使得显示屏从单纯的显示界面逐渐过渡到全面的感知、交互界面。\n\n[0004]在全面屏手机设计中，正面的屏占比已经接近100％，没有位置放置上述光学传感器件，为了将光学传感器件放在屏下，就需要在光学传感器件正上方制造一个满足光学传感器件所需要的透过率的开孔，以便实现光学传感器件的正常功能，即所谓的“盲孔技术”，但这种盲孔技术，开口的区域并未保留其显示功能，如此难免造成画面的缺失。因此，以上的设计并不能称得上是真正意义上的全面屏，只是进一步提高了屏占比，因为光学器件对应的显示屏位置并没有显示功能。由此可知，现有技术中的显示屏无法在为光学传感器件提供透光条件的基础上保证其全面显示功能。\n\n发明内容\n\n[0005]本申请实施例提供一种显示面板和显示装置，可以在为电子元件区提供透光条件的基础上实现全面显示功能。\n\n[0006]本申请实施例提供一种显示面板，包括第一显示模组和第二显示模组；所述第一显示模组的背部设有用于安装光学传感器的电子元件区，所述第一显示模组包括显示区以及与所述显示区相邻设置的透光区，所述透光区与所述电子元件区对应设置；\n\n[0007]所述第二显示模组设置在所述透光区，且与所述第一显示模组的所述显示区相邻接；所述第二显示模组包括呈阵列分布的多个像素区；每个像素区设有自发光的微型发光单元，且任意相邻的两个所述微型发光单元间隔设置。\n\n[0008]在一实施例中，所述第二显示模组与所述电子元件区之间设置有生长基板；所述生长基板在垂直于所述显示面板方向上的投影的形状和大小与所述透光区在垂直于所述显示面板方向上的投影的形状和大小相匹配；\n\n[0009]每个所述像素区的所述微型发光单元形成于所述生长基板远离所述电子元件区的一侧。\n\n[0010]在一实施例中，每个所述像素区包括多种颜色的子像素区，所述微型发光单元包括与所述多种颜色的子像素区一一对应设置的多个子微型发光单元；\n\n[0011]所述多个子微型发光单元间隔设置。\n\n[0012]在一实施例中，每个所述子微型发光单元包括依次设置在所述生长基板上的微型发光二极管和量子点色转换单元。\n\n[0013]在一实施例中，所述多种颜色的子像素区包括红色子像素区、绿色子像素区和蓝色子像素区；\n\n[0014]所述红色子像素区对应的所述量子点色转换单元为红色量子点色转换单元；所述绿色子像素区对应的所述量子点色转换单元为绿色量子点色转换单元；所述蓝色子像素区对应的所述量子点色转换单元为蓝色量子点色转换单元；\n\n[0015]所述微型发光二极管包括蓝色微型发光二极管和紫色微型发光二极管中的任意一种。\n\n[0016]在一实施例中，所述多种颜色的子像素区包括红色子像素区、绿色子像素区和蓝色子像素区；\n\n[0017]所述绿色子像素区对应的所述子微型发光单元包括绿色微型发光二极管，所述蓝色子像素区对应的所述子微型发光单元包括蓝色纳米环微型发光二极管，所述红色子像素区对应的所述子微型发光单元包括红色量子点纳米环微型发光二极管。\n\n[0018]在一实施例中，所述绿色微型发光二极管包括依次设置在所述生长基板上的第一N型掺杂层、第一多量子阱层以及第一P型掺杂层；\n\n[0019]所述蓝色纳米环微型发光二极管包括所述第一N型掺杂层以及设置在所述第一N型掺杂层上的呈阵列分布的多个纳米环，每个所述纳米环包括依次设置在所述第一N型掺杂层上的第二多量子阱层和第二P型掺杂层；所述第一多量子阱层和所述第二多量子阱层的材料相同，且所述第一P型掺杂层和所述第二P型掺杂层的材料相同；\n\n[0020]所述红色量子点纳米环微型发光二极管包括所述蓝色纳米环微型发光二极管以及覆盖在所述蓝色纳米环微型发光二极管上的红色量子点色转换层。\n\n[0021]在一实施例中，所述微型发光单元包括多色微型发光二极管；所述多色微型发光二极管在不同的电流信号以及时序信号控制下分别发出红光、绿光和蓝光。\n\n[0022]在一实施例中，所述多色微型发光二极管包括依次设置在所述生长基板上的第二N型掺杂层、多量子阱堆叠层、电子阻挡层和第三P型掺杂层；\n\n[0023]所述多量子阱堆叠层包括依次设置在所述第二N型掺杂层上的第一载流子阻挡层、蓝光发射功能层、第二载流子阻挡层、绿光发射功能层、第三载流子阻挡层、红光发射功能层。\n\n[0024]本申请实施例还提供一种显示装置，包括上述的显示面板，以及设置在所述第一显示模组背部的所述电子元件区的光学传感器。\n\n[0025]本申请实施例提供的显示面板，包括第一显示模组和第二显示模组，且第二显示模组设置在第一显示模组的透光区，第一显示模组可以通过设置在多个像素区的自发光的微型发光单元显示图像，当显示面板用于显示时，透光区可以通过第二显示模组显示图像，且第二显示模组显示的图像与第一显示模组的显示区的图像叠加后，呈现完整的图像，可以实现真正意义上的全面屏显示；并且，由于微型发光单元的体积较小，且任意相邻的两个微型发光单元间隔设置，当显示面板用于采光时，光线可以从任意相邻的两个微型发光单元之间进入电子元件区，从而可以为电子元件区提供有效的采光条件；另外，由于透光区面积较小，第二显示模组中的微型发光单元的数量较少，没有巨量转移、良率和检测的难题。\n\n附图说明\n\n[0026]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0027]图1为本申请实施例提供的一种显示面板的俯视结构示意图。\n\n[0028]图2为图1中A-A’处的截面结构示意图。\n\n[0029]图3为本申请实施例提供的一种第二显示模组的像素区的俯视结构示意图。\n\n[0030]图4为本申请实施例提供的一种第二显示模组的像素区的截面结构示意图。\n\n[0031]图5为本申请实施例提供的另一种第二显示模组的像素区的截面结构示意图。\n\n[0032]图6为本申请实施例提供的一种微型发光单元的俯视结构示意图。\n\n[0033]图7为本申请实施例提供的另一种第二显示模组的像素区的俯视结构示意图。\n\n[0034]图8为本申请实施例提供的一种多色微型发光二极管的截面结构示意图。\n\n[0035]图9为本申请实施例提供的一种多色微型发光二极管中的多量子阱堆叠层的截面结构示意图。\n\n[0036]图10为本申请实施例提供的一种显示装置的结构示意图。\n\n具体实施方式\n\n[0037]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0038]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0039]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0040]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0041]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0042]如图1至图4所示，本申请实施例提供了一种显示面板1，包括第一显示模组2和第二显示模组3；第一显示模组2的背部设有用于安装光学传感器的电子元件区4，第一显示模组2包括显示区5以及与显示区5相邻设置的透光区6，透光区6与电子元件区4对应设置；第二显示模组3设置在透光区6，且与第一显示模组2的显示区5相邻接；第二显示模组3包括呈阵列分布的多个像素区7；每个像素区7设有自发光的微型发光单元8，且任意相邻的两个微型发光单元8间隔设置。当显示面板1处于显示状态时，第一显示模组2的显示区5显示第一图像，第二显示模组3通过位于多个像素区7的微型发光单元8自发光在透光区6显示第二图像，具体可以通过显示面板1内部的驱动芯片(IC)算法分配第一图像和第二图像，通过第一图像和第二图像的叠加，呈现完整图像，实现真正的全面屏显示；当显示面板1处于非显示状态时，外界光线可以从第二显示模组3的多个微型发光单元8之间透过并进入电子元件区4，实现采光功能。\n\n[0043]可以理解的是，任意相邻的两个微型发光单元8间隔设置，即每个微型发光单元8仅占据对应的像素区7的一部分区域，每个像素区7中未被微型发光单元8占据的区域为可透光的区域；由于微型发光单元8的体积较小，使得每个像素区7中的可透光的区域较大，当显示面板1处于非显示状态时，有足够大的可透光的区域允许外界的光进入，有效的保证了透光区6的采光效果。需要说明的是，虽然多个像素区7的微型发光单元8间隔设置，但是微型发光单元8为自发光结构，且亮度高，适当的间距并不影响整个第二显示模组3的正常显示效果。\n\n[0044]具体的，微型发光单元8可以由微型发光二极管(Micro LED)组成，也可以由MiniLED组成，当然还可以由其他微型的自发光显示器件组成，此处不做限制。\n\n[0045]具体的，第二显示模组3与电子元件区4之间设置有生长基板9；生长基板9在垂直于显示面板1方向上的投影的形状和大小与透光区6在垂直于显示面板1方向上的投影的形状和大小相匹配(即生长基板9在透光区6内与第一显示模组2的显示区5无缝拼接)；每个像素区7的微型发光单元8形成于生长基板9远离电子元件区4的一侧，也就是说第二显示模组3的每个像素区7的微型发光单元8均直接在生长基板9上生长形成，当然，生长基板9上布置有驱动电路。需要说明的是，形成有微型发光单元8的生长基板9是按照透光区6的形状和大小进行切割形成的，且可以直接将切割后的整块形成有微型发光单元8的生长基板9组装到透光区6，这种组装方式可以避免采用常规的SMT(Surface Mount Technology，表面组装技术)机台逐颗组装或者通过巨量转移的方式(如静电力、流体、粘附力、真空组装等方式)将微型发光单元8逐个地转运至衬底基板上。\n\n[0046]若采用SMT机台逐颗组装或者巨量转移的方式将微型发光单元8逐个地转运至衬底基板上，需要通过低温绑定技术，利用金、镍、锡、铜、铟等将微型发光单元8的阴极和阳极连接至衬底基板中的驱动阵列，并通过主动或者被动电路控制每个微型发光单元8的开关状态，实现画面显示；然而，这种巨量转移组装的方式具有良率低、修复困难等难题。而本实施例直接在生长基板9上生长形成微型发光单元8，将形状和大小与透光区6相匹配的生长基板9整块组装到透光区6，无需转移微型发光单元8，消除了后期的绑定带来的难题，提高了第二显示模组3的良率且避免了微型发光单元8的修复难题。\n\n[0047]在一实施例中，如图3所示，每个像素区7包括多种颜色的子像素区10，微型发光单元8包括与多种颜色的子像素区10一一对应设置的多个子微型发光单元11；多个子微型发光单元11间隔设置，当显示面板1处于非显示状态时，外界光线既可以从多个微型发光单元8之间透过，也可以从多个子微型发光单元11之间透过，从而进入电子元件区4，使得透光区6域增大了，进而增强了采光效果。\n\n[0048]具体的，如图4所示，每个子微型发光单元11包括依次设置在生长基板9上的微型发光二极管12和量子点色转换单元13，微型发光二极管12发出的光可以激发量子点色转换单元13发出对应颜色的光。\n\n[0049]具体的，多种颜色的子像素区10包括红色子像素区14、绿色子像素区15和蓝色子像素区16；红色子像素区14对应的量子点色转换单元13为红色量子点色转换单元17；绿色子像素区15对应的量子点色转换单元13为绿色量子点色转换单元18；蓝色子像素区16对应的量子点色转换单元13为蓝色量子点色转换单元19；微型发光二极管12包括蓝色微型发光二极管12和紫色微型发光二极管12中的任意一种。微型发光二极管12发出的蓝光或紫光可以激发红色量子点色转换单元17、绿色量子点色转换单元18和蓝色量子点色转换单元19分别发出红光、绿光和蓝光。\n\n[0050]具体的，每个子像素区10的微型发光二极管12(蓝色微型发光二极管12或紫色微型发光二极管12)直接在透明的生长基板9上生长形成；由于量子点喷涂技术在保证均一性的前提下喷涂尺寸可做到3μm×10μm，远小于目前的OLED像素区的尺寸，故红色量子点色转换单元17、绿色量子点色转换单元18和蓝色量子点色转换单元19可以采用量子点喷涂技术涂布在对应的微型发光二极管12上，形成基于蓝光或紫光激发的全彩色微型发光二极管12阵列；其中，生长基板9包括GaN(氮化镓)基板，生长基板9和微型发光二极管12还设有第一缓冲层20，微型发光二极管12和量子点色转换单元13之间还设有水氧阻隔层21，且量子点色转换单元13远离微型发光二极管12的一侧也设有水氧阻隔层21，该水氧阻隔层21还设有防护层22。需要说明的是，量子点色转换单元13还可以采用其他发光材料替换，不限于量子点材料。\n\n[0051]具体的，由于第一显示模组2的透光区6的面积较小，第一显示模组2仅需设置上万颗微型发光二极管12即可，无需数百万的巨量转移，有效的避免了良率低、修复困难等问题；同时，由于直接在生长基板9上生长形成微型发光二极只适用于小面积生长，故第一显示模组2的透光区6的面积较小为在透光区6整块组装形成有微型发光二极管12的生长基板9提供了条件。\n\n[0052]具体的，第一显示模组2可以是液晶显示模组，液晶显示模组包括相对设置的阵列基板和彩膜基板，以及设置在阵列基板和彩膜基板之间的液晶层，第二显示模组3具体可以设置在阵列基板上也可以设置在彩膜基板上，此处不作限制。第一显示模组2为液晶显示模组时，与第二显示模组3采用不同的驱动电路驱动。当然，液晶显示模组还可以是COA(ColorFilter On Array，彩色滤光片在阵列侧)型的液晶显示器件。\n\n[0053]当然，第一显示模组2还可以是有机发光二极管(OLED，Organic Light-EmittingDiode)显示模组，有机发光二极管显示模组包括呈阵列分布的多个有机发光二极管，有机发光二极管和微型发光单元8可以共用驱动基板，避免第一显示模组2和第二显示模组3的驱动电路不一致，减少了驱动电路的数量，从而减小了走线的布线宽度，有利于窄化边框以及降低成本；由于微型发光二极管12的尺寸远小于有机发光二极管，使得透光区6的透光性较强，并且微型发光二极管12是基于无机发光材料的器件，其亮度更高可靠性更好，能够用作光补偿元件(例如闪光灯)，或者作为空间阵列光源用于投射结构光(例如用于三维图像识别的光源)，使得显示面板1的透光区6的功能多样化且提高了光学信息的采集效果。\n\n[0054]本实施例中，第二显示模组3设置在第一显示模组2的透光区6，第二显示模组3可以通过设置在多个像素区7的自发光的微型发光单元8显示图像，当显示面板1用于显示时，透光区6可以通过第二显示模组3显示图像，且第二显示模组3显示的图像与第一显示模组2的显示区5显示的图像叠加后，呈现完整的图像，可以实现真正意义上的全面屏显示；并且，由于任意相邻的两个微型发光单元8间隔设置，且每个像素区7内的子微型发光单元11也间隔设置，当显示面板1用于采光时，光线可以从任意相邻的两个微型发光单元8之间以及任意相邻的两个子微型发光单元11之间进入电子元件区4，从而可以为电子元件区4提供较好的采光条件；另外，由于透光区6面积较小，第二显示模组3中的微型发光单元8的数量较少，没有巨量转移、良率和检测的难题；除此之外，将微型发光二极管12构成的第二显示模组3组装到第一显示模组2的透光区6，并实现全面屏显示，能够探索微型发光二极管12的绑定、驱动电路、驱动算法、画质分析等诸多光电特性，有利于促进微型发光二极管12显示技术的发展。\n\n[0055]如图3、图5和图6所示，本申请实施例还提供了一种显示面板1，与上述实施例不同的在于，多种颜色的子像素区10包括红色子像素区14、绿色子像素区15和蓝色子像素区16；绿色子像素区15对应的子微型发光单元11包括绿色微型发光二极管23，蓝色子像素区16对应的子微型发光单元11包括蓝色纳米环微型发光二极管24，红色子像素区14对应的子微型发光单元11包括红色量子点纳米环微型发光二极管25。\n\n[0056]具体的，绿色微型发光二极管23包括依次设置在生长基板9上的第一N型掺杂层26、第一多量子阱层27以及第一P型掺杂层28；蓝色纳米环微型发光二极管24包括第一N型掺杂层26以及设置在第一N型掺杂层26上的呈阵列分布的多个纳米环29，每个纳米环29包括依次设置在第一N型掺杂层26上的第二多量子阱层30和第二P型掺杂层31；第一多量子阱层27和第二多量子阱层30的材料相同，且第一P型掺杂层28和第二P型掺杂层31的材料相同；红色量子点纳米环微型发光二极管25包括蓝色纳米环微型发光二极管24以及覆盖在蓝色纳米环微型发光二极管24上的红色量子点色转换层32。\n\n[0057]具体的，绿色微型发光二极管23、蓝色纳米环微型发光二极管24和红色量子点纳米环微型发光二极管25直接在透明的生长基板9上生长形成；生长基板9包括蓝宝石基底，当然，不限于此；绿色微型发光二极管23、蓝色纳米环微型发光二极管24和红色量子点纳米环微型发光二极管25与生长基板9之间还设有第二缓冲层33，且位于绿色微型发光二极管23、蓝色纳米环微型发光二极管24和红色量子点纳米环微型发光二极管25下方的缓冲层间隔设置；绿色微型发光二极管23、蓝色纳米环微型发光二极管24和红色量子点纳米环微型发光二极管25远离生长基板9的一侧设有整层铺设的透明的导电层34和第一电极35，上述每个微型发光二极管12的第一N型掺杂层26上还设有第二电极36。\n\n[0058]具体的，蓝色纳米环微型发光二极管24的每一层的材料与绿色微型发光二极管23对应相同，区别点在于蓝色纳米环微型发光二极管24通过量子局限史塔克效应(quantumconfined Stark effect)形成包括第二多量子阱层30和第二P型掺杂层31的纳米环29，而纳米环29利用应变弛豫效应可以将绿光转变为蓝光，故蓝色纳米环微型发光二极管24发蓝光；红色量子点纳米环微型发光二极管25包括蓝色纳米环微型发光二极管24和覆盖在蓝色纳米环微型发光二极管24上的红色量子点色转换层32，蓝色纳米环微型发光二极管24发出的蓝光可以激发红色量子点色转换层32发红光，且蓝色纳米环微型发光二极管24利用非辐射共振能量转移(NRET)机制，可以提升红色量子点色转换层32的色转换效率。\n\n[0059]具体的，红色量子点纳米环微型发光二极管25中的红色量子点色转换层32可以采用量子点喷涂技术涂布在与红色子像素区14对应的纳米环29的表面。\n\n[0060]本实施例中，第二显示模组3设置在第一显示模组2的透光区6，第二显示模组3可以通过设置在每个像素区7的自发光的绿色微型发光二极管23、蓝色纳米环微型发光二极管24和红色量子点纳米环微型发光二极管25显示画面图像，当显示面板1用于显示时，透光区6可以通过第二显示模组3显示图像，且第二显示模组3显示的图像与第一显示模组2的显示区5的图像叠加后，呈现完整的图像，可以实现真正意义上的全面屏显示；并且，由于任意相邻的两个微型发光单元8间隔设置，且每个像素区7的绿色微型发光二极管23、蓝色纳米环微型发光二极管24和红色量子点纳米环微型发光二极管25之间也间隔设置，当显示面板1用于采光时，光线可以从任意相邻的两个微型发光单元8之间以及绿色微型发光二极管23、蓝色纳米环微型发光二极管24和红色量子点纳米环微型发光二极管25之间进入电子元件区4，从而可以为电子元件区4提供较好的采光条件；另外，由于透光区6面积较小，第二显示模组3中的微型发光单元8的数量较少，没有巨量转移、良率和检测的难题；除了上述优势之外，本实施例中蓝色纳米环微型发光二极管24和红色量子点纳米环微型发光二极管25光转换效率较高，且仅需喷涂一种颜色的量子点色转换层，减少了量子点材料的使用量。\n\n[0061]如图7至图9所示，本申请实施例还提供了一种显示面板1，与上述实施例不同的在于，微型发光单元8包括多色微型发光二极管37；多色微型发光二极管37包括依次设置在生长基板9上的第二N型掺杂层38、多量子阱堆叠层39、电子阻挡层40和第三P型掺杂层41；多量子阱堆叠层39包括依次设置在第二N型掺杂层38上的第一载流子阻挡层42、蓝光发射功能层43、第二载流子阻挡层44、绿光发射功能层45、第三载流子阻挡层46、红光发射功能层47；多色微型发光二极管37在不同的电流信号以及时序信号控制下分别发出红光、绿光和蓝光。也就是说每个像素区7仅设置一个多色微型发光二极管37即可实现全彩色显示。\n\n[0062]具体的，生长基板9包括GaN基板、蓝宝石基板和SiC(碳化硅)基板中的任意一种；每个像素区7的多色微型发光二极管37在生长基板9上生长形成，且生长基板9和第二N型掺杂层38之间还设有第三缓冲层50；第三P型掺杂层41远离电子阻挡层40还设有第一电极35，第二N型掺杂层38上还设有第二电极36。\n\n[0063]具体的，蓝光发射功能层43包括依次堆叠在第一载流子阻挡层42上的第一量子壁障层、蓝光激发层和第二量子壁障层；绿光发射功能层45包括依次堆叠在第二载流子阻挡层44上的第三量子壁障层、绿光激发层和第四量子壁障层；红光发射功能层47包括依次堆叠在第三载流子阻挡层46上的第五量子壁障层、红光激发层和第六量子壁障层。\n\n[0064]具体的，第一载流子阻挡层42、第二载流子阻挡层44和第三载流子阻挡层46的组成成分、厚度和掺杂浓度均不同，利用第一载流子阻挡层42、第二载流子阻挡层44和第三载流子阻挡层46的选择性吸收作用，采用不同大小的电流信号驱动单个的多色微型发光二极管37时，单个的多色微型发光二极管37可出现不同颜色的光，例如分别采用15mA、200mA和400mA的电流信号驱动单个的多色微型发光二极管37可分别产生波长为650nm的红光、波长为530nm的绿光和波长为460nm的蓝光，发出的光可覆盖SRGB(Standard Red Green Blue，色彩空间)色域，因此，每个多色微型发光二极管37可以通过调整驱动时钟信号，通过时间上的混光，形成白光。这种具有出光波长随驱动电流动态调整的集成性质的多色微型发光二极管37具有较好的应用前景。\n\n[0065]具体的，以单个像素区7的尺寸为60μmx60μm为例，对于第二显示模组3分别采用红绿蓝(RGB)三色微型发光二极管显示的情况，若红色子像素区14、绿色子像素区15和蓝色子像素区16的大小相同，且均为15μmx15μm，不考虑电路开口损失的影响下，其像素区7开口率为81.25％；而在相同的分辨率下，对于第二显示模组3采用多色微型发光二极管显示的情况，其像素区7的开口率为93.75％，大大地高于前者，即每个像素区7的可透光的区域较大的提高了，因此，本实施例在分辨率相同的情况下，可以有效的提高透光区6的透光效果。而若在相同的开口率下，采用多色微型发光二极管显示的第二显示模组3的分辨率是采用RGB三色微型发光二极管显示的第二显示模组3的三倍，因此，本实施例在开口率相同的情况下可以有效的提高透光区6的分辨率，从而提高显示效果。\n\n[0066]本实施例中，采用单颗多色微型发光二极管代替RGB三色微型发光二极管，一方面，同上述几个实施例一样，可以在为显示面板1背部的电子元件区4提供透光条件的基础上实现真正的全面屏显示；另一方面，相比将每个像素区7分为红色子像素区14、绿色子像素区15和蓝色子像素区16，且在每个子像素区10中设置微型发光二极管12，本实施例在每个像素区7仅设置一个多色微型发光二极管37，使得微型发光二极管12(芯片)的使用数量降低了三分之二，从而使得微型发光二极管12的转移次数以及键合和修复次数均大大降低，因此，本实施例可以有效的降低成本，具体可以降低微型发光二极管12(芯片)的生产成本、转移成本、键合(绑定)成本及修复成本等；另一方面，本实施例中每个像素区7不需要设置多个子像素区10，相当于减少了子像素区10的数量(即减少了微型发光二极管12的数量)，可以有效的降低驱动电路的数量，且减小走线排布的宽度，降低了驱动设计难度和边框宽度，有利于提高屏占比(窄边框化)，实现全面屏显示；另一方面，本实施例的多色微型发光二极管37用于透明显示时，既可以保持显示效果不变，又可以显著的提高显示面板1的屏占比。\n\n[0067]如图10所示，本申请实施例还提高了一种显示装置48，包括上述实施例中的任意一种显示面板1，以及设置在第一显示模组2背部的电子元件区4的光学传感器49。\n\n[0068]具体的，光学传感器49包括指纹识别传感器、摄像头、面部识别传感器和距离识别传感器中的任意一种，当然，光学传感器49的类型不限于此。\n\n[0069]具体的，显示装置48可以是液晶显示装置，即显示面板1的第一显示模组2为液晶显示模组，如图5所示，显示装置48还包括为第一显示模组提供背光源的背光模组51，光学传感器49设置在背光模组51和显示面板1之间，当然，光学传感器49可以内嵌在背光模组51中。需要说明的是，显示装置48可以是OLED显示装置，即显示面板1的第一显示模组2为OLED显示模组，此处不做限制。\n\n[0070]当显示装置48处于显示状态时，显示面板1的第一显示模组2的显示区5显示第一图像，且第二显示模组3通过位于多个像素区7的微型发光单元8自发光在透光区6显示第二图像，具体可以通过显示面板1内部的驱动芯片算法分配第一图像和第二图像，通过第一图像和第二图像的叠加，呈现完整图像，实现真正的全面屏显示；当显示装置48处于光学识别状态时，外界光线可以从透光区6的第二显示模组3的多个微型发光单元8之间透过并进入电子元件区4被光学传感器49接收，根据光学传感器49的结构不同可以实现指纹识别、摄像、面部识别或距离识别。\n\n[0071]本实施例中，透光区6在显示状态下可以用于显示以保持显示面板1的显示画面的完整性，从而实现真正的全面屏显示，且在光学识别状态时可以提供足够大的透光区6域以使显示面板1背部的光学传感器49采光充足，从而进行正常且精确的光学识别；并且，透光区6的第二显示模组3可以由微型发光二极管12组成，由于微型发光二极管12是基于无机发光材料的器件，其亮度更高可靠性更好，能够用作光补偿元件或者作为空间阵列光源用于投射结构光，有利于提高光学传感器49的光学识别效果；因此，本申请的显示装置48既可以实现真正的全面屏显示，还可以较好的实现屏下光学识别功能。\n\n[0072]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0073]以上对本申请实施例所提供的一种显示面板和显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示设备技术领域，尤其涉及一种显示面板和显示装置。\n\n背景技术\n\n[0002]在中小尺寸显示领域，全面屏技术成为当前的重点研发方向，换言之，如何通过相关技术的开发实现人机交互界面的屏占比最大化，乃是当前的研发重点。\n\n[0003]第一代全面屏技术主要集中于屏幕尺寸比例由16:9变化为18+：9，第二代全面屏则是进一步地压缩屏幕上下左右的边界，甚至采用柔性折叠技术最大化可视面积，而近期全面屏的另一个动向则是如何将显示终端的指纹识别、摄像头、面部识别、距离传感等光学传感器件进一步地融合进显示屏的有效显示区(Active Area；AA区)，使得显示屏从单纯的显示界面逐渐过渡到全面的感知、交互界面。\n\n[0004]在全面屏手机设计中，正面的屏占比已经接近100％，没有位置放置上述光学传感器件，为了将光学传感器件放在屏下，就需要在光学传感器件正上方制造一个满足光学传感器件所需要的透过率的开孔，以便实现光学传感器件的正常功能，即所谓的“盲孔技术”，但这种盲孔技术，开口的区域并未保留其显示功能，如此难免造成画面的缺失。因此，以上的设计并不能称得上是真正意义上的全面屏，只是进一步提高了屏占比，因为光学器件对应的显示屏位置并没有显示功能。由此可知，现有技术中的显示屏无法在为光学传感器件提供透光条件的基础上保证其全面显示功能。\n\n发明内容\n\n[0005]本申请实施例提供一种显示面板和显示装置，可以在为电子元件区提供透光条件的基础上实现全面显示功能。\n\n[0006]本申请实施例提供一种显示面板，包括第一显示模组和第二显示模组；所述第一显示模组的背部设有用于安装光学传感器的电子元件区，所述第一显示模组包括显示区以及与所述显示区相邻设置的透光区，所述透光区与所述电子元件区对应设置；\n\n[0007]所述第二显示模组设置在所述透光区，且与所述第一显示模组的所述显示区相邻接；所述第二显示模组包括呈阵列分布的多个像素区；每个像素区设有自发光的微型发光单元，且任意相邻的两个所述微型发光单元间隔设置。\n\n[0008]在一实施例中，所述第二显示模组与所述电子元件区之间设置有生长基板；所述生长基板在垂直于所述显示面板方向上的投影的形状和大小与所述透光区在垂直于所述显示面板方向上的投影的形状和大小相匹配；\n\n[0009]每个所述像素区的所述微型发光单元形成于所述生长基板远离所述电子元件区的一侧。\n\n[0010]在一实施例中，每个所述像素区包括多种颜色的子像素区，所述微型发光单元包括与所述多种颜色的子像素区一一对应设置的多个子微型发光单元；\n\n[0011]所述多个子微型发光单元间隔设置。\n\n[0012]在一实施例中，每个所述子微型发光单元包括依次设置在所述生长基板上的微型发光二极管和量子点色转换单元。\n\n[0013]在一实施例中，所述多种颜色的子像素区包括红色子像素区、绿色子像素区和蓝色子像素区；\n\n[0014]所述红色子像素区对应的所述量子点色转换单元为红色量子点色转换单元；所述绿色子像素区对应的所述量子点色转换单元为绿色量子点色转换单元；所述蓝色子像素区对应的所述量子点色转换单元为蓝色量子点色转换单元；\n\n[0015]所述微型发光二极管包括蓝色微型发光二极管和紫色微型发光二极管中的任意一种。\n\n[0016]在一实施例中，所述多种颜色的子像素区包括红色子像素区、绿色子像素区和蓝色子像素区；\n\n[0017]所述绿色子像素区对应的所述子微型发光单元包括绿色微型发光二极管，所述蓝色子像素区对应的所述子微型发光单元包括蓝色纳米环微型发光二极管，所述红色子像素区对应的所述子微型发光单元包括红色量子点纳米环微型发光二极管。\n\n[0018]在一实施例中，所述绿色微型发光二极管包括依次设置在所述生长基板上的第一N型掺杂层、第一多量子阱层以及第一P型掺杂层；\n\n[0019]所述蓝色纳米环微型发光二极管包括所述第一N型掺杂层以及设置在所述第一N型掺杂层上的呈阵列分布的多个纳米环，每个所述纳米环包括依次设置在所述第一N型掺杂层上的第二多量子阱层和第二P型掺杂层；所述第一多量子阱层和所述第二多量子阱层的材料相同，且所述第一P型掺杂层和所述第二P型掺杂层的材料相同；\n\n[0020]所述红色量子点纳米环微型发光二极管包括所述蓝色纳米环微型发光二极管以及覆盖在所述蓝色纳米环微型发光二极管上的红色量子点色转换层。\n\n[0021]在一实施例中，所述微型发光单元包括多色微型发光二极管；所述多色微型发光二极管在不同的电流信号以及时序信号控制下分别发出红光、绿光和蓝光。\n\n[0022]在一实施例中，所述多色微型发光二极管包括依次设置在所述生长基板上的第二N型掺杂层、多量子阱堆叠层、电子阻挡层和第三P型掺杂层；\n\n[0023]所述多量子阱堆叠层包括依次设置在所述第二N型掺杂层上的第一载流子阻挡层、蓝光发射功能层、第二载流子阻挡层、绿光发射功能层、第三载流子阻挡层、红光发射功能层。\n\n[0024]本申请实施例还提供一种显示装置，包括上述的显示面板，以及设置在所述第一显示模组背部的所述电子元件区的光学传感器。\n\n[0025]本申请实施例提供的显示面板，包括第一显示模组和第二显示模组，且第二显示模组设置在第一显示模组的透光区，第一显示模组可以通过设置在多个像素区的自发光的微型发光单元显示图像，当显示面板用于显示时，透光区可以通过第二显示模组显示图像，且第二显示模组显示的图像与第一显示模组的显示区的图像叠加后，呈现完整的图像，可以实现真正意义上的全面屏显示；并且，由于微型发光单元的体积较小，且任意相邻的两个微型发光单元间隔设置，当显示面板用于采光时，光线可以从任意相邻的两个微型发光单元之间进入电子元件区，从而可以为电子元件区提供有效的采光条件；另外，由于透光区面积较小，第二显示模组中的微型发光单元的数量较少，没有巨量转移、良率和检测的难题。\n\n附图说明\n\n[0026]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0027]图1为本申请实施例提供的一种显示面板的俯视结构示意图。\n\n[0028]图2为图1中A-A’处的截面结构示意图。\n\n[0029]图3为本申请实施例提供的一种第二显示模组的像素区的俯视结构示意图。\n\n[0030]图4为本申请实施例提供的一种第二显示模组的像素区的截面结构示意图。\n\n[0031]图5为本申请实施例提供的另一种第二显示模组的像素区的截面结构示意图。\n\n[0032]图6为本申请实施例提供的一种微型发光单元的俯视结构示意图。\n\n[0033]图7为本申请实施例提供的另一种第二显示模组的像素区的俯视结构示意图。\n\n[0034]图8为本申请实施例提供的一种多色微型发光二极管的截面结构示意图。\n\n[0035]图9为本申请实施例提供的一种多色微型发光二极管中的多量子阱堆叠层的截面结构示意图。\n\n[0036]图10为本申请实施例提供的一种显示装置的结构示意图。\n\n具体实施方式\n\n[0037]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0038]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0039]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0040]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0041]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0042]如图1至图4所示，本申请实施例提供了一种显示面板1，包括第一显示模组2和第二显示模组3；第一显示模组2的背部设有用于安装光学传感器的电子元件区4，第一显示模组2包括显示区5以及与显示区5相邻设置的透光区6，透光区6与电子元件区4对应设置；第二显示模组3设置在透光区6，且与第一显示模组2的显示区5相邻接；第二显示模组3包括呈阵列分布的多个像素区7；每个像素区7设有自发光的微型发光单元8，且任意相邻的两个微型发光单元8间隔设置。当显示面板1处于显示状态时，第一显示模组2的显示区5显示第一图像，第二显示模组3通过位于多个像素区7的微型发光单元8自发光在透光区6显示第二图像，具体可以通过显示面板1内部的驱动芯片(IC)算法分配第一图像和第二图像，通过第一图像和第二图像的叠加，呈现完整图像，实现真正的全面屏显示；当显示面板1处于非显示状态时，外界光线可以从第二显示模组3的多个微型发光单元8之间透过并进入电子元件区4，实现采光功能。\n\n[0043]可以理解的是，任意相邻的两个微型发光单元8间隔设置，即每个微型发光单元8仅占据对应的像素区7的一部分区域，每个像素区7中未被微型发光单元8占据的区域为可透光的区域；由于微型发光单元8的体积较小，使得每个像素区7中的可透光的区域较大，当显示面板1处于非显示状态时，有足够大的可透光的区域允许外界的光进入，有效的保证了透光区6的采光效果。需要说明的是，虽然多个像素区7的微型发光单元8间隔设置，但是微型发光单元8为自发光结构，且亮度高，适当的间距并不影响整个第二显示模组3的正常显示效果。\n\n[0044]具体的，微型发光单元8可以由微型发光二极管(Micro LED)组成，也可以由MiniLED组成，当然还可以由其他微型的自发光显示器件组成，此处不做限制。\n\n[0045]具体的，第二显示模组3与电子元件区4之间设置有生长基板9；生长基板9在垂直于显示面板1方向上的投影的形状和大小与透光区6在垂直于显示面板1方向上的投影的形状和大小相匹配(即生长基板9在透光区6内与第一显示模组2的显示区5无缝拼接)；每个像素区7的微型发光单元8形成于生长基板9远离电子元件区4的一侧，也就是说第二显示模组3的每个像素区7的微型发光单元8均直接在生长基板9上生长形成，当然，生长基板9上布置有驱动电路。需要说明的是，形成有微型发光单元8的生长基板9是按照透光区6的形状和大小进行切割形成的，且可以直接将切割后的整块形成有微型发光单元8的生长基板9组装到透光区6，这种组装方式可以避免采用常规的SMT(Surface Mount Technology，表面组装技术)机台逐颗组装或者通过巨量转移的方式(如静电力、流体、粘附力、真空组装等方式)将微型发光单元8逐个地转运至衬底基板上。\n\n[0046]若采用SMT机台逐颗组装或者巨量转移的方式将微型发光单元8逐个地转运至衬底基板上，需要通过低温绑定技术，利用金、镍、锡、铜、铟等将微型发光单元8的阴极和阳极连接至衬底基板中的驱动阵列，并通过主动或者被动电路控制每个微型发光单元8的开关状态，实现画面显示；然而，这种巨量转移组装的方式具有良率低、修复困难等难题。而本实施例直接在生长基板9上生长形成微型发光单元8，将形状和大小与透光区6相匹配的生长基板9整块组装到透光区6，无需转移微型发光单元8，消除了后期的绑定带来的难题，提高了第二显示模组3的良率且避免了微型发光单元8的修复难题。\n\n[0047]在一实施例中，如图3所示，每个像素区7包括多种颜色的子像素区10，微型发光单元8包括与多种颜色的子像素区10一一对应设置的多个子微型发光单元11；多个子微型发光单元11间隔设置，当显示面板1处于非显示状态时，外界光线既可以从多个微型发光单元8之间透过，也可以从多个子微型发光单元11之间透过，从而进入电子元件区4，使得透光区6域增大了，进而增强了采光效果。\n\n[0048]具体的，如图4所示，每个子微型发光单元11包括依次设置在生长基板9上的微型发光二极管12和量子点色转换单元13，微型发光二极管12发出的光可以激发量子点色转换单元13发出对应颜色的光。\n\n[0049]具体的，多种颜色的子像素区10包括红色子像素区14、绿色子像素区15和蓝色子像素区16；红色子像素区14对应的量子点色转换单元13为红色量子点色转换单元17；绿色子像素区15对应的量子点色转换单元13为绿色量子点色转换单元18；蓝色子像素区16对应的量子点色转换单元13为蓝色量子点色转换单元19；微型发光二极管12包括蓝色微型发光二极管12和紫色微型发光二极管12中的任意一种。微型发光二极管12发出的蓝光或紫光可以激发红色量子点色转换单元17、绿色量子点色转换单元18和蓝色量子点色转换单元19分别发出红光、绿光和蓝光。\n\n[0050]具体的，每个子像素区10的微型发光二极管12(蓝色微型发光二极管12或紫色微型发光二极管12)直接在透明的生长基板9上生长形成；由于量子点喷涂技术在保证均一性的前提下喷涂尺寸可做到3μm×10μm，远小于目前的OLED像素区的尺寸，故红色量子点色转换单元17、绿色量子点色转换单元18和蓝色量子点色转换单元19可以采用量子点喷涂技术涂布在对应的微型发光二极管12上，形成基于蓝光或紫光激发的全彩色微型发光二极管12阵列；其中，生长基板9包括GaN(氮化镓)基板，生长基板9和微型发光二极管12还设有第一缓冲层20，微型发光二极管12和量子点色转换单元13之间还设有水氧阻隔层21，且量子点色转换单元13远离微型发光二极管12的一侧也设有水氧阻隔层21，该水氧阻隔层21还设有防护层22。需要说明的是，量子点色转换单元13还可以采用其他发光材料替换，不限于量子点材料。\n\n[0051]具体的，由于第一显示模组2的透光区6的面积较小，第一显示模组2仅需设置上万颗微型发光二极管12即可，无需数百万的巨量转移，有效的避免了良率低、修复困难等问题；同时，由于直接在生长基板9上生长形成微型发光二极只适用于小面积生长，故第一显示模组2的透光区6的面积较小为在透光区6整块组装形成有微型发光二极管12的生长基板9提供了条件。\n\n[0052]具体的，第一显示模组2可以是液晶显示模组，液晶显示模组包括相对设置的阵列基板和彩膜基板，以及设置在阵列基板和彩膜基板之间的液晶层，第二显示模组3具体可以设置在阵列基板上也可以设置在彩膜基板上，此处不作限制。第一显示模组2为液晶显示模组时，与第二显示模组3采用不同的驱动电路驱动。当然，液晶显示模组还可以是COA(ColorFilter On Array，彩色滤光片在阵列侧)型的液晶显示器件。\n\n[0053]当然，第一显示模组2还可以是有机发光二极管(OLED，Organic Light-EmittingDiode)显示模组，有机发光二极管显示模组包括呈阵列分布的多个有机发光二极管，有机发光二极管和微型发光单元8可以共用驱动基板，避免第一显示模组2和第二显示模组3的驱动电路不一致，减少了驱动电路的数量，从而减小了走线的布线宽度，有利于窄化边框以及降低成本；由于微型发光二极管12的尺寸远小于有机发光二极管，使得透光区6的透光性较强，并且微型发光二极管12是基于无机发光材料的器件，其亮度更高可靠性更好，能够用作光补偿元件(例如闪光灯)，或者作为空间阵列光源用于投射结构光(例如用于三维图像识别的光源)，使得显示面板1的透光区6的功能多样化且提高了光学信息的采集效果。\n\n[0054]本实施例中，第二显示模组3设置在第一显示模组2的透光区6，第二显示模组3可以通过设置在多个像素区7的自发光的微型发光单元8显示图像，当显示面板1用于显示时，透光区6可以通过第二显示模组3显示图像，且第二显示模组3显示的图像与第一显示模组2的显示区5显示的图像叠加后，呈现完整的图像，可以实现真正意义上的全面屏显示；并且，由于任意相邻的两个微型发光单元8间隔设置，且每个像素区7内的子微型发光单元11也间隔设置，当显示面板1用于采光时，光线可以从任意相邻的两个微型发光单元8之间以及任意相邻的两个子微型发光单元11之间进入电子元件区4，从而可以为电子元件区4提供较好的采光条件；另外，由于透光区6面积较小，第二显示模组3中的微型发光单元8的数量较少，没有巨量转移、良率和检测的难题；除此之外，将微型发光二极管12构成的第二显示模组3组装到第一显示模组2的透光区6，并实现全面屏显示，能够探索微型发光二极管12的绑定、驱动电路、驱动算法、画质分析等诸多光电特性，有利于促进微型发光二极管12显示技术的发展。\n\n[0055]如图3、图5和图6所示，本申请实施例还提供了一种显示面板1，与上述实施例不同的在于，多种颜色的子像素区10包括红色子像素区14、绿色子像素区15和蓝色子像素区16；绿色子像素区15对应的子微型发光单元11包括绿色微型发光二极管23，蓝色子像素区16对应的子微型发光单元11包括蓝色纳米环微型发光二极管24，红色子像素区14对应的子微型发光单元11包括红色量子点纳米环微型发光二极管25。\n\n[0056]具体的，绿色微型发光二极管23包括依次设置在生长基板9上的第一N型掺杂层26、第一多量子阱层27以及第一P型掺杂层28；蓝色纳米环微型发光二极管24包括第一N型掺杂层26以及设置在第一N型掺杂层26上的呈阵列分布的多个纳米环29，每个纳米环29包括依次设置在第一N型掺杂层26上的第二多量子阱层30和第二P型掺杂层31；第一多量子阱层27和第二多量子阱层30的材料相同，且第一P型掺杂层28和第二P型掺杂层31的材料相同；红色量子点纳米环微型发光二极管25包括蓝色纳米环微型发光二极管24以及覆盖在蓝色纳米环微型发光二极管24上的红色量子点色转换层32。\n\n[0057]具体的，绿色微型发光二极管23、蓝色纳米环微型发光二极管24和红色量子点纳米环微型发光二极管25直接在透明的生长基板9上生长形成；生长基板9包括蓝宝石基底，当然，不限于此；绿色微型发光二极管23、蓝色纳米环微型发光二极管24和红色量子点纳米环微型发光二极管25与生长基板9之间还设有第二缓冲层33，且位于绿色微型发光二极管23、蓝色纳米环微型发光二极管24和红色量子点纳米环微型发光二极管25下方的缓冲层间隔设置；绿色微型发光二极管23、蓝色纳米环微型发光二极管24和红色量子点纳米环微型发光二极管25远离生长基板9的一侧设有整层铺设的透明的导电层34和第一电极35，上述每个微型发光二极管12的第一N型掺杂层26上还设有第二电极36。\n\n[0058]具体的，蓝色纳米环微型发光二极管24的每一层的材料与绿色微型发光二极管23对应相同，区别点在于蓝色纳米环微型发光二极管24通过量子局限史塔克效应(quantumconfined Stark effect)形成包括第二多量子阱层30和第二P型掺杂层31的纳米环29，而纳米环29利用应变弛豫效应可以将绿光转变为蓝光，故蓝色纳米环微型发光二极管24发蓝光；红色量子点纳米环微型发光二极管25包括蓝色纳米环微型发光二极管24和覆盖在蓝色纳米环微型发光二极管24上的红色量子点色转换层32，蓝色纳米环微型发光二极管24发出的蓝光可以激发红色量子点色转换层32发红光，且蓝色纳米环微型发光二极管24利用非辐射共振能量转移(NRET)机制，可以提升红色量子点色转换层32的色转换效率。\n\n[0059]具体的，红色量子点纳米环微型发光二极管25中的红色量子点色转换层32可以采用量子点喷涂技术涂布在与红色子像素区14对应的纳米环29的表面。\n\n[0060]本实施例中，第二显示模组3设置在第一显示模组2的透光区6，第二显示模组3可以通过设置在每个像素区7的自发光的绿色微型发光二极管23、蓝色纳米环微型发光二极管24和红色量子点纳米环微型发光二极管25显示画面图像，当显示面板1用于显示时，透光区6可以通过第二显示模组3显示图像，且第二显示模组3显示的图像与第一显示模组2的显示区5的图像叠加后，呈现完整的图像，可以实现真正意义上的全面屏显示；并且，由于任意相邻的两个微型发光单元8间隔设置，且每个像素区7的绿色微型发光二极管23、蓝色纳米环微型发光二极管24和红色量子点纳米环微型发光二极管25之间也间隔设置，当显示面板1用于采光时，光线可以从任意相邻的两个微型发光单元8之间以及绿色微型发光二极管23、蓝色纳米环微型发光二极管24和红色量子点纳米环微型发光二极管25之间进入电子元件区4，从而可以为电子元件区4提供较好的采光条件；另外，由于透光区6面积较小，第二显示模组3中的微型发光单元8的数量较少，没有巨量转移、良率和检测的难题；除了上述优势之外，本实施例中蓝色纳米环微型发光二极管24和红色量子点纳米环微型发光二极管25光转换效率较高，且仅需喷涂一种颜色的量子点色转换层，减少了量子点材料的使用量。\n\n[0061]如图7至图9所示，本申请实施例还提供了一种显示面板1，与上述实施例不同的在于，微型发光单元8包括多色微型发光二极管37；多色微型发光二极管37包括依次设置在生长基板9上的第二N型掺杂层38、多量子阱堆叠层39、电子阻挡层40和第三P型掺杂层41；多量子阱堆叠层39包括依次设置在第二N型掺杂层38上的第一载流子阻挡层42、蓝光发射功能层43、第二载流子阻挡层44、绿光发射功能层45、第三载流子阻挡层46、红光发射功能层47；多色微型发光二极管37在不同的电流信号以及时序信号控制下分别发出红光、绿光和蓝光。也就是说每个像素区7仅设置一个多色微型发光二极管37即可实现全彩色显示。\n\n[0062]具体的，生长基板9包括GaN基板、蓝宝石基板和SiC(碳化硅)基板中的任意一种；每个像素区7的多色微型发光二极管37在生长基板9上生长形成，且生长基板9和第二N型掺杂层38之间还设有第三缓冲层50；第三P型掺杂层41远离电子阻挡层40还设有第一电极35，第二N型掺杂层38上还设有第二电极36。\n\n[0063]具体的，蓝光发射功能层43包括依次堆叠在第一载流子阻挡层42上的第一量子壁障层、蓝光激发层和第二量子壁障层；绿光发射功能层45包括依次堆叠在第二载流子阻挡层44上的第三量子壁障层、绿光激发层和第四量子壁障层；红光发射功能层47包括依次堆叠在第三载流子阻挡层46上的第五量子壁障层、红光激发层和第六量子壁障层。\n\n[0064]具体的，第一载流子阻挡层42、第二载流子阻挡层44和第三载流子阻挡层46的组成成分、厚度和掺杂浓度均不同，利用第一载流子阻挡层42、第二载流子阻挡层44和第三载流子阻挡层46的选择性吸收作用，采用不同大小的电流信号驱动单个的多色微型发光二极管37时，单个的多色微型发光二极管37可出现不同颜色的光，例如分别采用15mA、200mA和400mA的电流信号驱动单个的多色微型发光二极管37可分别产生波长为650nm的红光、波长为530nm的绿光和波长为460nm的蓝光，发出的光可覆盖SRGB(Standard Red Green Blue，色彩空间)色域，因此，每个多色微型发光二极管37可以通过调整驱动时钟信号，通过时间上的混光，形成白光。这种具有出光波长随驱动电流动态调整的集成性质的多色微型发光二极管37具有较好的应用前景。\n\n[0065]具体的，以单个像素区7的尺寸为60μmx60μm为例，对于第二显示模组3分别采用红绿蓝(RGB)三色微型发光二极管显示的情况，若红色子像素区14、绿色子像素区15和蓝色子像素区16的大小相同，且均为15μmx15μm，不考虑电路开口损失的影响下，其像素区7开口率为81.25％；而在相同的分辨率下，对于第二显示模组3采用多色微型发光二极管显示的情况，其像素区7的开口率为93.75％，大大地高于前者，即每个像素区7的可透光的区域较大的提高了，因此，本实施例在分辨率相同的情况下，可以有效的提高透光区6的透光效果。而若在相同的开口率下，采用多色微型发光二极管显示的第二显示模组3的分辨率是采用RGB三色微型发光二极管显示的第二显示模组3的三倍，因此，本实施例在开口率相同的情况下可以有效的提高透光区6的分辨率，从而提高显示效果。\n\n[0066]本实施例中，采用单颗多色微型发光二极管代替RGB三色微型发光二极管，一方面，同上述几个实施例一样，可以在为显示面板1背部的电子元件区4提供透光条件的基础上实现真正的全面屏显示；另一方面，相比将每个像素区7分为红色子像素区14、绿色子像素区15和蓝色子像素区16，且在每个子像素区10中设置微型发光二极管12，本实施例在每个像素区7仅设置一个多色微型发光二极管37，使得微型发光二极管12(芯片)的使用数量降低了三分之二，从而使得微型发光二极管12的转移次数以及键合和修复次数均大大降低，因此，本实施例可以有效的降低成本，具体可以降低微型发光二极管12(芯片)的生产成本、转移成本、键合(绑定)成本及修复成本等；另一方面，本实施例中每个像素区7不需要设置多个子像素区10，相当于减少了子像素区10的数量(即减少了微型发光二极管12的数量)，可以有效的降低驱动电路的数量，且减小走线排布的宽度，降低了驱动设计难度和边框宽度，有利于提高屏占比(窄边框化)，实现全面屏显示；另一方面，本实施例的多色微型发光二极管37用于透明显示时，既可以保持显示效果不变，又可以显著的提高显示面板1的屏占比。\n\n[0067]如图10所示，本申请实施例还提高了一种显示装置48，包括上述实施例中的任意一种显示面板1，以及设置在第一显示模组2背部的电子元件区4的光学传感器49。\n\n[0068]具体的，光学传感器49包括指纹识别传感器、摄像头、面部识别传感器和距离识别传感器中的任意一种，当然，光学传感器49的类型不限于此。\n\n[0069]具体的，显示装置48可以是液晶显示装置，即显示面板1的第一显示模组2为液晶显示模组，如图5所示，显示装置48还包括为第一显示模组提供背光源的背光模组51，光学传感器49设置在背光模组51和显示面板1之间，当然，光学传感器49可以内嵌在背光模组51中。需要说明的是，显示装置48可以是OLED显示装置，即显示面板1的第一显示模组2为OLED显示模组，此处不做限制。\n\n[0070]当显示装置48处于显示状态时，显示面板1的第一显示模组2的显示区5显示第一图像，且第二显示模组3通过位于多个像素区7的微型发光单元8自发光在透光区6显示第二图像，具体可以通过显示面板1内部的驱动芯片算法分配第一图像和第二图像，通过第一图像和第二图像的叠加，呈现完整图像，实现真正的全面屏显示；当显示装置48处于光学识别状态时，外界光线可以从透光区6的第二显示模组3的多个微型发光单元8之间透过并进入电子元件区4被光学传感器49接收，根据光学传感器49的结构不同可以实现指纹识别、摄像、面部识别或距离识别。\n\n[0071]本实施例中，透光区6在显示状态下可以用于显示以保持显示面板1的显示画面的完整性，从而实现真正的全面屏显示，且在光学识别状态时可以提供足够大的透光区6域以使显示面板1背部的光学传感器49采光充足，从而进行正常且精确的光学识别；并且，透光区6的第二显示模组3可以由微型发光二极管12组成，由于微型发光二极管12是基于无机发光材料的器件，其亮度更高可靠性更好，能够用作光补偿元件或者作为空间阵列光源用于投射结构光，有利于提高光学传感器49的光学识别效果；因此，本申请的显示装置48既可以实现真正的全面屏显示，还可以较好的实现屏下光学识别功能。\n\n[0072]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0073]以上对本申请实施例所提供的一种显示面板和显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10778, 23832, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种Micro-LED芯片坏点修复方法。\n\n背景技术\n\n[0002]微型发光二极管(Micro-Light Emitting Diode，Micro-LED)显示器是一种以Micro-LED芯片作为像素点的自发光显示器，因其具有高亮度、高发光效率和低功耗等优点，逐渐成为了国际显示行业竞争的焦点，业内多家公司也将其视为下一代显示技术而开始积极布局。\n\n[0003]Micro-LED显示器在制造过程中一般采用巨量转移的方式将Micro-LED芯片转移至基板上，在完成巨量转移之后，对Micro-LED芯片进行坏点检测。现有技术中，在检测到坏点之后，一般采用坏点剔除与定点单个放置的修复方法对坏点进行修复，即，剔除每个坏点，并在坏点处放置一个新的Micro-LED芯片。然而，这种修复方法需要多次重复剔除坏点并多次重复放置新的Micro-LED芯片，修复效率极低。\n\n发明内容\n\n[0004]本申请实施例提供一种能够提高修复效率的Micro-LED芯片坏点修复方法。\n\n[0005]本申请实施例提供一种Micro-LED芯片坏点修复方法，所述修复方法包括以下步骤：\n\n[0006]提供一基板，所述基板上设有若干子像素区，每个所述子像素区中设有两个凹槽，所述两个凹槽分别为主凹槽和备份凹槽；\n\n[0007]通过流体巨量转移方法将巨量的主Micro-LED芯片转移至所述基板，使每个所述子像素区中的所述主凹槽装载一个所述主Micro-LED芯片；\n\n[0008]检测所有的所述主Micro-LED芯片以找出存在坏点的所述子像素区；\n\n[0009]通过流体巨量转移方法将若干备份Micro-LED芯片转移至所述基板，使检测出所述坏点的每个所述子像素区中的所述备份凹槽装载一个所述备份Micro-LED芯片；\n\n[0010]其中，同一所述子像素区中的所述备份Micro-LED芯片和所述主Micro-LED芯片发出的光的颜色相同。\n\n[0011]在一些实施例中，同一所述子像素区中的所述主凹槽和所述备份凹槽具有相同的形状和大小，所述主凹槽的形状和大小与装载的所述主Micro-LED芯片的形状和大小相适配，所述备份凹槽的形状和大小与装载的所述备份Micro-LED芯片的形状和大小相适配。\n\n[0012]在一些实施例中，若干所述子像素区划分为三个区域，每个所述区域内设有若干所述子像素区；其中，\n\n[0013]位于同一所述区域内的所述主凹槽具有相同的形状和大小，位于同一所述区域内的所述主凹槽用于装载发出相同颜色的光的主Micro-LED芯片；\n\n[0014]位于不同所述区域内的所述主凹槽具有相同的形状和不同的大小，位于不同所述区域内的所述主凹槽装载发出不同颜色的光的主Micro-LED芯片。\n\n[0015]在一些实施例中，每个所述主凹槽和每个所述备份凹槽的底部均设有两个电极，所述主凹槽中的两个电极与第一焊接电路电连接，所述备份凹槽中的两个电极与第二焊接电路电连接。\n\n[0016]在一些实施例中，每个所述电极的材料为共晶材料。\n\n[0017]在一些实施例中，所述步骤“通过流体巨量转移方法将巨量的主Micro-LED芯片转移至所述基板，使每个所述子像素区中的所述主凹槽装载一个所述主Micro-LED芯片”包括以下步骤：\n\n[0018]使用正光阻填充所有的所述主凹槽和所有的所述备份凹槽；\n\n[0019]提供第一光罩，所述第一光罩上设有若干第一通孔，若干所述第一通孔分别与所有的所述主凹槽对应设置，每个所述第一通孔的形状和大小与对应设置的所述主凹槽的截面形状和截面大小相适配；\n\n[0020]使用所述第一光罩覆盖所述基板设有所述主凹槽的一面；\n\n[0021]对所有的所述主凹槽中的所述正光阻进行曝光和显影，以去除所有的所述主凹槽中的所述正光阻；\n\n[0022]去除所述第一光罩；\n\n[0023]提供含有巨量的所述主Micro-LED芯片的主悬浮液，使所述主悬浮液流经所述基板设有所述主凹槽的一面，以使得每个所述主凹槽装载一个所述主Micro-LED芯片。\n\n[0024]在一些实施例中，所述修复方法在所述步骤“通过流体巨量转移方法将若干备份Micro-LED芯片转移至所述基板，使检测出所述坏点的每个所述子像素区中的所述备份凹槽装载一个所述备份Micro-LED芯片”之前还包括：\n\n[0025]将检测出所述坏点的每个所述子像素区中的所述备份凹槽标记为修复凹槽。\n\n[0026]在一些实施例中，所述步骤“通过流体巨量转移方法将若干备份Micro-LED芯片转移至所述基板，使检测出所述坏点的每个所述子像素区中的所述备份凹槽装载一个所述备份Micro-LED芯片”包括以下步骤：\n\n[0027]提供第二光罩，所述第二光罩上设有若干第二通孔，若干所述第二通孔分别与所有的所述备份凹槽对应设置，每个所述第二通孔的形状和大小与对应设置的所述备份凹槽的截面形状和截面大小相适配；\n\n[0028]使用所述第二光罩覆盖所述基板设有所述备份凹槽的一面；\n\n[0029]对所有的所述修复凹槽中的所述正光阻进行曝光和显影，以去除所有的所述修复凹槽中的所述正光阻；\n\n[0030]去除所述第二光罩；\n\n[0031]提供含有若干所述备份Micro-LED芯片的备份悬浮液，使所述备份悬浮液流经所述基板设有所述备份凹槽的一面，以使得每个所述修复凹槽装载一个所述备份Micro-LED芯片。\n\n[0032]在一些实施例中，所述步骤“检测所有的所述主Micro-LED芯片以找出存在坏点的所述子像素区”包括以下步骤：\n\n[0033]将所述第一焊接电路通电，使每个所述主凹槽中的两个电极与装载的所述主Micro-LED芯片进行键合；\n\n[0034]基于紫外线检测方法或Micro-LED芯片光电特性检测方法检测所有的所述主Micro-LED芯片，以找出存在坏点的所述子像素区。\n\n[0035]在一些实施例中，所述步骤“通过流体巨量转移方法将若干备份Micro-LED芯片转移至所述基板，使检测出所述坏点的每个所述子像素区中的所述备份凹槽装载一个所述备份Micro-LED芯片”之后还包括：\n\n[0036]将所述第二焊接电路通电，使检测出所述坏点的每个所述子像素区中的所述备份凹槽中的两个电极与装载的所述备份Micro-LED芯片进行键合。\n\n[0037]本申请实施例提供的Micro-LED芯片坏点修复方法，基板的每个子像素区中均设有主凹槽和备份凹槽，使用流体巨量转移方法可以使每个子像素区中的主凹槽装载一个主Micro-LED芯片，当检测出所有的主Micro-LED芯片中存在坏点时，再次使用流体巨量转移方法使检测出坏点的每个子像素区中的备份凹槽装载一个备份Micro-LED芯片。由于同一子像素区中的备份Micro-LED芯片和主Micro-LED芯片发出的光的颜色相同，因此，对于任意一个子像素区来说，若该子像素区中的主Micro-LED芯片为坏点，则该子像素区中的备份Micro-LED芯片可以替代主Micro-LED芯片进行正常发光，从而完成对坏点的修复。由于修复过程中使用了流体巨量转移方法，因此，只需将包含若干备份Micro-LED芯片的悬浮液向基板设有备份凹槽的一面倾倒一次或少量几次即可完成修复，相比于现有的坏点剔除与定点单个放置的修复方法，提高了修复效率。\n\n附图说明\n\n[0038]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0039]图1为本申请实施例提供的基板的俯视图；\n\n[0040]图2为图1中所示基板沿II-II线的剖视图；\n\n[0041]图3为本申请实施例提供的一种Micro-LED芯片坏点修复方法流程图；\n\n[0042]图4为本申请另一实施例提供的基板的俯视图；\n\n[0043]图5为本申请实施例提供的一种电极与焊接电路的连接示意图；\n\n[0044]图6为巨量的主Micro-LED芯片转移至基板的流程图；\n\n[0045]图7为本申请实施例提供的正光阻填充示意图；\n\n[0046]图8为本申请实施例提供的第一光罩的示意图；\n\n[0047]图9为主凹槽中正光阻的曝光示意图；\n\n[0048]图10为主凹槽中正光阻经曝光和显影后的基板的结构示意图；\n\n[0049]图11为第一次流体巨量转移过程示意图；\n\n[0050]图12为若干备份Micro-LED芯片转移至基板的流程图；\n\n[0051]图13为本申请实施例提供的第二光罩的示意图；\n\n[0052]图14为修复凹槽中正光阻的曝光示意图；\n\n[0053]图15为修复凹槽中正光阻经曝光和显影后的基板的结构示意图；\n\n[0054]图16为第二次流体巨量转移过程示意图。\n\n具体实施方式\n\n[0055]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0056]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0057]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0058]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0059]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0060]本申请实施例提供一种Micro-LED芯片坏点修复方法，为了更清楚地说明该修复方法，首先对该修复方法所需使用到的基板进行说明。基板可以为薄膜晶体管(Thin FilmTransistor，TFT)阵列基板或互补金属氧化物半导体(Complementary Metal OxideSemiconductor，CMOS)驱动基板，本申请实施例对此不作具体限定。\n\n[0061]图1为本申请实施例提供的基板的俯视图，图2为图1中所示基板沿II-II线的剖视图，如图1和图2所示，该基板1上设有若干子像素区10，每个子像素区10中设有两个凹槽，为了便于后文描述，将这两个凹槽分别称为主凹槽110和备份凹槽120。\n\n[0062]每个子像素区10中的主凹槽110用于装载一个Micro-LED芯片，为了便于后文描述，将该Micro-LED芯片称为主Micro-LED芯片。\n\n[0063]每个子像素区10中的备份凹槽120，用于当该子像素区10中的主Micro-LED芯片为坏点时，装载另一个Micro-LED芯片，为了便于后文描述，将装载的另一个Micro-LED芯片称为备份Micro-LED芯片。\n\n[0064]需要说明的是，主Micro-LED芯片和备份Micro-LED芯片均为能够发出特定颜色的光的元器件，其中，特定颜色为红色、绿色或蓝色。同一子像素区10中的备份Micro-LED芯片和主Micro-LED芯片发出的光的颜色相同。对于任意一个子像素区10来说，若该子像素区10中的主Micro-LED芯片为坏点，则该子像素区10中的备份Micro-LED芯片可以替代主Micro-LED芯片，进行发光。\n\n[0065]图3为本申请实施例提供的一种Micro-LED芯片坏点修复方法流程图，如图3所示，该修复方法包括：\n\n[0066]步骤301，提供一基板1，该基板1上设有若干子像素区10，每个子像素区10中设有两个凹槽，这两个凹槽分别为主凹槽110和备份凹槽120。\n\n[0067]由于该基板1已在上文中详细说明，因此此处不再赘述。\n\n[0068]步骤302，通过流体巨量转移方法将巨量的主Micro-LED芯片转移至基板1，使每个子像素区10中的主凹槽110装载一个主Micro-LED芯片。\n\n[0069]其中，流体巨量转移方法指的是：将包含巨量的主Micro-LED芯片的悬浮液向基板1设有主凹槽110的一面倾倒，使该悬浮液流经基板1设有主凹槽110的一面，进而使每个主凹槽110中均有一个主Micro-LED芯片落入。由于只能使每个主凹槽110装载一个主Micro-LED芯片，因此，需要将所有的备份凹槽120的开口进行遮挡。由于遮挡方法众多，因此，本申请实施例对遮挡方法不作具体说明。\n\n[0070]步骤303，检测所有的主Micro-LED芯片以找出存在坏点的子像素区10。\n\n[0071]步骤304，通过流体巨量转移方法将若干备份Micro-LED芯片转移至基板1，使检测出坏点的每个子像素区10中的备份凹槽120装载一个备份Micro-LED芯片。\n\n[0072]其中，流体巨量转移方法指的是：将包含若干备份Micro-LED芯片的悬浮液向基板1设有备份凹槽120的一面倾倒，使该悬浮液流经基板1设有备份凹槽120的一面，进而使检测出坏点的每个子像素区10中的备份凹槽120中均有一个备份Micro-LED芯片落入。由于只能使检测出坏点的每个子像素区10中的备份凹槽120装载一个备份Micro-LED芯片，因此，将不需要装载备份Micro-LED芯片的备份凹槽120的开口进行遮挡。由于遮挡方法众多，因此，本申请实施例对遮挡方法不作具体说明。\n\n[0073]可以理解的是，基板1的每个子像素区10中均设有主凹槽110和备份凹槽120，使用流体巨量转移方法可以使每个子像素区10中的主凹槽110装载一个主Micro-LED芯片，当检测出所有的主Micro-LED芯片中存在坏点时，再次使用流体巨量转移方法使检测出坏点的每个子像素区10中的备份凹槽120装载一个备份Micro-LED芯片。由于同一子像素区10中的备份Micro-LED芯片和主Micro-LED芯片发出的光的颜色相同，因此，对于任意一个子像素区10来说，若该子像素区10中的主Micro-LED芯片为坏点，则该子像素区10中的备份Micro-LED芯片可以替代主Micro-LED芯片进行正常发光，从而完成对坏点的修复。由于修复过程中使用了流体巨量转移方法，因此，只需将包含若干备份Micro-LED芯片的悬浮液向基板1设有备份凹槽120的一面倾倒一次或少量几次即可完成修复，相比于现有的坏点剔除与定点单个放置的修复方法，提高了修复效率。\n\n[0074]在一些实施例中，如图1和图2所示，同一子像素区10中的主凹槽110和备份凹槽120具有相同的形状和大小。图1和图2中所示出的主凹槽110和备份凹槽120的形状为圆柱体，其截面形状为圆形，在其他实施例中，主凹槽110和备份凹槽120的形状还可为其他各种形状，本申请实施例对此不作具体限定。\n\n[0075]主凹槽110与其装载的主Micro-LED芯片的形状和大小相适配。即，主Micro-LED芯片能够大体上填满主凹槽110，且装载有一个主Micro-LED芯片的主凹槽110的剩余空间无法再装载其他主Micro-LED芯片或备份Micro-LED芯片。\n\n[0076]备份凹槽120与其装载的备份Micro-LED芯片的形状和大小相适配。即，备份Micro-LED芯片能够大体上填满备份凹槽120，且装载有一个备份Micro-LED芯片的备份凹槽120的剩余空间无法再装载其他备份Micro-LED芯片。\n\n[0077]在一些实施例中，如图4所示，将若干子像素区10划分为三个区域，将这三个区域分别称为第一区域100、第二区域200和第三区域300，每个区域内设有若干子像素区10。\n\n[0078]其中，位于同一区域内的主凹槽110具有相同的形状和大小，位于同一区域内的主凹槽110用于装载发出相同颜色的光的主Micro-LED芯片。\n\n[0079]由于同一子像素区10中的主凹槽110和备份凹槽120具有相同的形状和大小，因此，同一区域内的主凹槽110和备份凹槽120均具有相同的形状和大小；由于同一子像素区10中的备份Micro-LED芯片和主Micro-LED芯片发出的光的颜色相同，因此，同一区域内的备份Micro-LED芯片和主Micro-LED芯片发出的光的颜色相同。\n\n[0080]位于不同区域内的主凹槽具有相同的形状和不同的大小，位于不同区域内的主凹槽装载发出不同颜色的光的主Micro-LED芯片。\n\n[0081]如图4所示，在本申请实施例中，三个区域内的主凹槽110和备份凹槽120的截面形状均为圆形，但第一区域100内的主凹槽110的尺寸大于第二区域200内的主凹槽110的尺寸，第二区域200内的主凹槽110的尺寸大于第三区域300内的主凹槽110的尺寸。\n\n[0082]并且，第一区域100内的主凹槽110装载发出红光的主Micro-LED芯片，第二区域200内的主凹槽110装载发出绿光的主Micro-LED芯片，第三区域300内的主凹槽110装载发出蓝光的主Micro-LED芯片。\n\n[0083]在一些实施例中，每个主凹槽110和每个备份凹槽120的底部均设有两个电极，图2所示的每个斜线填充框代表一个电极。如图5所示，每个主凹槽110中的两个电极与第一焊接电路41电连接，每个备份凹槽120中的两个电极与第二焊接电路42电连接。\n\n[0084]其中，第一焊接电路41用于在通电后使每个主凹槽110中的两个电极分别与其装载的主Micro-LED芯片键合，从而使得每个主Micro-LED芯片与基板1实现电性连接。\n\n[0085]同样地，第二焊接电路42用于在通电后使每个备份Micro-LED芯片与装载其的备份凹槽120中的两个电极键合，从而使得每个备份Micro-LED芯片与基板1实现电性连接。\n\n[0086]在一些实施例中，每个电极的材料为共晶材料。共晶材料为熔点较低的材料，当第一焊接电路41通电后，每个主凹槽110中的两个电极可在短时间内熔化，实现与装载的主Micro-LED芯片的键合。当第二焊接电路42通电后，装载有备份Micro-LED芯片的每个备份凹槽120中的两个电极可在短时间内熔化，实现与装载的备份Micro-LED芯片的键合。\n\n[0087]在一些实施例中，如图6所示，步骤“通过流体巨量转移方法将巨量的主Micro-LED芯片转移至基板1，使每个子像素区10中的主凹槽110装载一个主Micro-LED芯片”包括以下步骤：\n\n[0088]步骤3021，使用正光阻填充所有的主凹槽110和所有的备份凹槽120。\n\n[0089]其中，正光阻为一种光敏材料，其照到光的部分会融于显影剂。在本申请实施例中，如图7所示，使用正光阻(点状区域)填充基板1中所有的主凹槽110和所有的备份凹槽120，并使之满足平坦化要求，便于后续悬浮液在其上流动。\n\n[0090]步骤3022，提供第一光罩20，如图8所示，第一光罩20上设有若干第一通孔210(圆形空白区域)，这若干第一通孔210分别与图1所示基板1中所有的主凹槽110对应设置，且每个第一通孔210的形状和大小与对应设置的主凹槽110的截面形状和截面大小相适配。即，若将第一光罩20覆盖于基板1设有主凹槽110的一面，则基板1中所有的主凹槽110均不被遮挡，而所有的备份凹槽120均被遮挡。\n\n[0091]步骤3023，使用第一光罩20覆盖基板1设有主凹槽110的一面。\n\n[0092]需要说明的是，覆盖时需要保证第一光罩20的若干第一通孔210与基板1中所有的主凹槽110的位置对应，即，保证基板1中所有的主凹槽110均不被遮挡，而所有的备份凹槽120均被遮挡。\n\n[0093]步骤3024，如图9所示，在覆盖完毕后，对基板1中所有的主凹槽110中的正光阻进行曝光，图9示出的多个箭头代表多束光照。曝光完毕后，使用显影剂对基板1中所有的主凹槽110中的正光阻进行显影，以去除基板1中所有的主凹槽110中的正光阻，去除所有的主凹槽110中正光阻后的基板1的结构如图10所示。\n\n[0094]步骤3025，去除第一光罩20。\n\n[0095]步骤3026，如图11所示，提供含有巨量的主Micro-LED芯片的主悬浮液，使主悬浮液流经基板1设有主凹槽110的一面，以使得每个主凹槽110装载一个主Micro-LED芯片。在图11中，波浪线代表主悬浮液，箭头代表主悬浮液的流向，6个不规则体分别代表6个主Micro-LED芯片。\n\n[0096]需要说明的是，对于图4中所示的基板1，由于基板1中所有的子像素区10包括三个区域，位于同一区域内的主凹槽110具有相同的形状和大小，且位于同一区域内的主凹槽110装载的主Micro-LED芯片发出的光的颜色相同，位于不同区域内的主凹槽110的具有相同的形状和不同的大小，且位于不同区域内的主凹槽110装载的主Micro-LED芯片发出的光的颜色不同。因此，此时需要配置三类悬浮液，同一悬浮液中含有的主Micro-LED芯片的形状、大小和颜色均相同，不同悬浮液中的主Micro-LED芯片形状相同，大小不同且发出的光的颜色不同。\n\n[0097]三类悬浮液配置完成后，按照包含的主Micro-LED芯片从大到小的顺序，依次将三类悬浮液向基板1设有主凹槽110的一面倾倒，完成主Micro-LED芯片的流体巨量转移过程。\n\n[0098]在一些实施例中，修复方法在步骤“通过流体巨量转移方法将若干备份Micro-LED芯片转移至基板1，使检测出坏点的每个子像素区10中的备份凹槽120装载一个备份Micro-LED芯片”之前还包括：\n\n[0099]将检测出坏点的每个子像素区10中的备份凹槽120标记为修复凹槽。\n\n[0100]在一些实施例中，如图12所示，步骤“通过流体巨量转移方法将若干备份Micro-LED芯片转移至基板1，使检测出坏点的每个子像素区10中的备份凹槽120装载一个备份Micro-LED芯片”包括以下步骤：\n\n[0101]步骤3041，提供第二光罩30，如图13所示，第二光罩30上设有若干第二通孔320(圆形空白区域)，这若干第二通孔320分别与图1所示基板1中所有的备份凹槽120对应设置，且每个第二通孔320的形状和大小与对应设置的备份凹槽120的截面形状和截面大小相适配。即，若将第二光罩30覆盖于基板1设有备份凹槽120的一面，则基板1中所有的备份凹槽120均不被遮挡，而所有的主凹槽110均被遮挡。\n\n[0102]步骤3042，使用第二光罩30覆盖基板1设有备份凹槽120的一面。\n\n[0103]需要说明的是，覆盖时需要保证第二光罩30的若干第二通孔320与基板1中所有的备份凹槽120的位置对应，即，保证基板1中所有的备份凹槽120均不被遮挡，而所有的主凹槽110均被遮挡。\n\n[0104]步骤3043，如图14所示，在覆盖完毕后，对所有修复凹槽中的正光阻进行曝光，图14示出的多个箭头代表单束光照。曝光完毕后，使用显影剂对基板1中所有的修复凹槽中的正光阻进行显影，以去除基板1中所有的修复凹槽中的正光阻，去除所有的修复凹槽中的正光阻后的基板1的结构如图15所示。\n\n[0105]步骤3044，去除第二光罩30。\n\n[0106]步骤3045，如图16所示，提供含有若干备份Micro-LED芯片的备份悬浮液，使备份悬浮液流经基板1设有备份凹槽120的一面，以使得每个修复凹槽装载一个备份Micro-LED芯片。在图16中，波浪线代表备份悬浮液，箭头代表备份悬浮液的流向。\n\n[0107]需要说明的是，对于图4中所示的基板1，由于基板1中所有的子像素区10包括三个区域，位于同一区域内的修复凹槽具有相同的形状和大小，且位于同一区域内的修复凹槽装载的备份Micro-LED芯片发出的光的颜色相同，位于不同区域内的修复凹槽的具有相同的形状和不同的大小，且位于不同区域内的修复凹槽装载的备份Micro-LED芯片发出的光的颜色不同。因此，此时需要配置三类悬浮液，同一悬浮液中含有的备份Micro-LED芯片的形状、大小和颜色均相同，不同悬浮液中的备份Micro-LED芯片形状相同，大小不同且发出的光的颜色不同。\n\n[0108]三类悬浮液配置完成后，按照包含的备份Micro-LED芯片从大到小的顺序，依次将三类悬浮液向基板1设有备份凹槽120的一面倾倒，完成备份Micro-LED芯片的流体巨量转移过程。\n\n[0109]在一些实施例中，步骤“检测所有的主Micro-LED芯片以找出存在坏点的子像素区10”包括以下步骤：\n\n[0110]将第一焊接电路41通电，使每个主凹槽110中的两个电极与装载的主Micro-LED芯片进行键合；基于紫外线检测方法或Micro-LED光电特性检测方法检测所有的主Micro-LED芯片，以找出存在坏点的子像素区10。\n\n[0111]需要说明的是，主凹槽110中的两个电极与主Micro-LED芯片进行键合后，可采用热退火方法，改善两个电极与主Micro-LED芯片间的应力关系，进而使两个电极与主Micro-LED芯片的键合性能更好。\n\n[0112]在一些实施例中，步骤“通过流体巨量转移方法将若干备份Micro-LED芯片转移至基板1，使检测出坏点的每个子像素区10中的备份凹槽120装载一个备份Micro-LED芯片”之后还包括：\n\n[0113]将第二焊接电路42通电，使检测出坏点的每个子像素区10中的备份凹槽120中的两个电极与装载的备份Micro-LED芯片进行键合。\n\n[0114]需要说明的是，备份凹槽120中的两个电极与备份Micro-LED芯片进行键合后，也可采用热退火方法，改善两个电极与备份Micro-LED芯片间的应力关系，进而使两个电极与备份Micro-LED芯片键合性能更好。\n\n[0115]综上所述，本申请实施例提供的修复方法，利用流体转移环境和转移特性对Micro-LED坏点进行更便捷的修复，具有工艺简单，修复效率高，成本低的特点，有利于提高Micro-LED显示器生产的良率。\n\n[0116]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0117]以上对本申请实施例进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种Micro-LED芯片坏点修复方法。\n\n背景技术\n\n[0002]微型发光二极管(Micro-Light Emitting Diode，Micro-LED)显示器是一种以Micro-LED芯片作为像素点的自发光显示器，因其具有高亮度、高发光效率和低功耗等优点，逐渐成为了国际显示行业竞争的焦点，业内多家公司也将其视为下一代显示技术而开始积极布局。\n\n[0003]Micro-LED显示器在制造过程中一般采用巨量转移的方式将Micro-LED芯片转移至基板上，在完成巨量转移之后，对Micro-LED芯片进行坏点检测。现有技术中，在检测到坏点之后，一般采用坏点剔除与定点单个放置的修复方法对坏点进行修复，即，剔除每个坏点，并在坏点处放置一个新的Micro-LED芯片。然而，这种修复方法需要多次重复剔除坏点并多次重复放置新的Micro-LED芯片，修复效率极低。\n\n发明内容\n\n[0004]本申请实施例提供一种能够提高修复效率的Micro-LED芯片坏点修复方法。\n\n[0005]本申请实施例提供一种Micro-LED芯片坏点修复方法，所述修复方法包括以下步骤：\n\n[0006]提供一基板，所述基板上设有若干子像素区，每个所述子像素区中设有两个凹槽，所述两个凹槽分别为主凹槽和备份凹槽；\n\n[0007]通过流体巨量转移方法将巨量的主Micro-LED芯片转移至所述基板，使每个所述子像素区中的所述主凹槽装载一个所述主Micro-LED芯片；\n\n[0008]检测所有的所述主Micro-LED芯片以找出存在坏点的所述子像素区；\n\n[0009]通过流体巨量转移方法将若干备份Micro-LED芯片转移至所述基板，使检测出所述坏点的每个所述子像素区中的所述备份凹槽装载一个所述备份Micro-LED芯片；\n\n[0010]其中，同一所述子像素区中的所述备份Micro-LED芯片和所述主Micro-LED芯片发出的光的颜色相同。\n\n[0011]在一些实施例中，同一所述子像素区中的所述主凹槽和所述备份凹槽具有相同的形状和大小，所述主凹槽的形状和大小与装载的所述主Micro-LED芯片的形状和大小相适配，所述备份凹槽的形状和大小与装载的所述备份Micro-LED芯片的形状和大小相适配。\n\n[0012]在一些实施例中，若干所述子像素区划分为三个区域，每个所述区域内设有若干所述子像素区；其中，\n\n[0013]位于同一所述区域内的所述主凹槽具有相同的形状和大小，位于同一所述区域内的所述主凹槽用于装载发出相同颜色的光的主Micro-LED芯片；\n\n[0014]位于不同所述区域内的所述主凹槽具有相同的形状和不同的大小，位于不同所述区域内的所述主凹槽装载发出不同颜色的光的主Micro-LED芯片。\n\n[0015]在一些实施例中，每个所述主凹槽和每个所述备份凹槽的底部均设有两个电极，所述主凹槽中的两个电极与第一焊接电路电连接，所述备份凹槽中的两个电极与第二焊接电路电连接。\n\n[0016]在一些实施例中，每个所述电极的材料为共晶材料。\n\n[0017]在一些实施例中，所述步骤“通过流体巨量转移方法将巨量的主Micro-LED芯片转移至所述基板，使每个所述子像素区中的所述主凹槽装载一个所述主Micro-LED芯片”包括以下步骤：\n\n[0018]使用正光阻填充所有的所述主凹槽和所有的所述备份凹槽；\n\n[0019]提供第一光罩，所述第一光罩上设有若干第一通孔，若干所述第一通孔分别与所有的所述主凹槽对应设置，每个所述第一通孔的形状和大小与对应设置的所述主凹槽的截面形状和截面大小相适配；\n\n[0020]使用所述第一光罩覆盖所述基板设有所述主凹槽的一面；\n\n[0021]对所有的所述主凹槽中的所述正光阻进行曝光和显影，以去除所有的所述主凹槽中的所述正光阻；\n\n[0022]去除所述第一光罩；\n\n[0023]提供含有巨量的所述主Micro-LED芯片的主悬浮液，使所述主悬浮液流经所述基板设有所述主凹槽的一面，以使得每个所述主凹槽装载一个所述主Micro-LED芯片。\n\n[0024]在一些实施例中，所述修复方法在所述步骤“通过流体巨量转移方法将若干备份Micro-LED芯片转移至所述基板，使检测出所述坏点的每个所述子像素区中的所述备份凹槽装载一个所述备份Micro-LED芯片”之前还包括：\n\n[0025]将检测出所述坏点的每个所述子像素区中的所述备份凹槽标记为修复凹槽。\n\n[0026]在一些实施例中，所述步骤“通过流体巨量转移方法将若干备份Micro-LED芯片转移至所述基板，使检测出所述坏点的每个所述子像素区中的所述备份凹槽装载一个所述备份Micro-LED芯片”包括以下步骤：\n\n[0027]提供第二光罩，所述第二光罩上设有若干第二通孔，若干所述第二通孔分别与所有的所述备份凹槽对应设置，每个所述第二通孔的形状和大小与对应设置的所述备份凹槽的截面形状和截面大小相适配；\n\n[0028]使用所述第二光罩覆盖所述基板设有所述备份凹槽的一面；\n\n[0029]对所有的所述修复凹槽中的所述正光阻进行曝光和显影，以去除所有的所述修复凹槽中的所述正光阻；\n\n[0030]去除所述第二光罩；\n\n[0031]提供含有若干所述备份Micro-LED芯片的备份悬浮液，使所述备份悬浮液流经所述基板设有所述备份凹槽的一面，以使得每个所述修复凹槽装载一个所述备份Micro-LED芯片。\n\n[0032]在一些实施例中，所述步骤“检测所有的所述主Micro-LED芯片以找出存在坏点的所述子像素区”包括以下步骤：\n\n[0033]将所述第一焊接电路通电，使每个所述主凹槽中的两个电极与装载的所述主Micro-LED芯片进行键合；\n\n[0034]基于紫外线检测方法或Micro-LED芯片光电特性检测方法检测所有的所述主Micro-LED芯片，以找出存在坏点的所述子像素区。\n\n[0035]在一些实施例中，所述步骤“通过流体巨量转移方法将若干备份Micro-LED芯片转移至所述基板，使检测出所述坏点的每个所述子像素区中的所述备份凹槽装载一个所述备份Micro-LED芯片”之后还包括：\n\n[0036]将所述第二焊接电路通电，使检测出所述坏点的每个所述子像素区中的所述备份凹槽中的两个电极与装载的所述备份Micro-LED芯片进行键合。\n\n[0037]本申请实施例提供的Micro-LED芯片坏点修复方法，基板的每个子像素区中均设有主凹槽和备份凹槽，使用流体巨量转移方法可以使每个子像素区中的主凹槽装载一个主Micro-LED芯片，当检测出所有的主Micro-LED芯片中存在坏点时，再次使用流体巨量转移方法使检测出坏点的每个子像素区中的备份凹槽装载一个备份Micro-LED芯片。由于同一子像素区中的备份Micro-LED芯片和主Micro-LED芯片发出的光的颜色相同，因此，对于任意一个子像素区来说，若该子像素区中的主Micro-LED芯片为坏点，则该子像素区中的备份Micro-LED芯片可以替代主Micro-LED芯片进行正常发光，从而完成对坏点的修复。由于修复过程中使用了流体巨量转移方法，因此，只需将包含若干备份Micro-LED芯片的悬浮液向基板设有备份凹槽的一面倾倒一次或少量几次即可完成修复，相比于现有的坏点剔除与定点单个放置的修复方法，提高了修复效率。\n\n附图说明\n\n[0038]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0039]图1为本申请实施例提供的基板的俯视图；\n\n[0040]图2为图1中所示基板沿II-II线的剖视图；\n\n[0041]图3为本申请实施例提供的一种Micro-LED芯片坏点修复方法流程图；\n\n[0042]图4为本申请另一实施例提供的基板的俯视图；\n\n[0043]图5为本申请实施例提供的一种电极与焊接电路的连接示意图；\n\n[0044]图6为巨量的主Micro-LED芯片转移至基板的流程图；\n\n[0045]图7为本申请实施例提供的正光阻填充示意图；\n\n[0046]图8为本申请实施例提供的第一光罩的示意图；\n\n[0047]图9为主凹槽中正光阻的曝光示意图；\n\n[0048]图10为主凹槽中正光阻经曝光和显影后的基板的结构示意图；\n\n[0049]图11为第一次流体巨量转移过程示意图；\n\n[0050]图12为若干备份Micro-LED芯片转移至基板的流程图；\n\n[0051]图13为本申请实施例提供的第二光罩的示意图；\n\n[0052]图14为修复凹槽中正光阻的曝光示意图；\n\n[0053]图15为修复凹槽中正光阻经曝光和显影后的基板的结构示意图；\n\n[0054]图16为第二次流体巨量转移过程示意图。\n\n具体实施方式\n\n[0055]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0056]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0057]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0058]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0059]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0060]本申请实施例提供一种Micro-LED芯片坏点修复方法，为了更清楚地说明该修复方法，首先对该修复方法所需使用到的基板进行说明。基板可以为薄膜晶体管(Thin FilmTransistor，TFT)阵列基板或互补金属氧化物半导体(Complementary Metal OxideSemiconductor，CMOS)驱动基板，本申请实施例对此不作具体限定。\n\n[0061]图1为本申请实施例提供的基板的俯视图，图2为图1中所示基板沿II-II线的剖视图，如图1和图2所示，该基板1上设有若干子像素区10，每个子像素区10中设有两个凹槽，为了便于后文描述，将这两个凹槽分别称为主凹槽110和备份凹槽120。\n\n[0062]每个子像素区10中的主凹槽110用于装载一个Micro-LED芯片，为了便于后文描述，将该Micro-LED芯片称为主Micro-LED芯片。\n\n[0063]每个子像素区10中的备份凹槽120，用于当该子像素区10中的主Micro-LED芯片为坏点时，装载另一个Micro-LED芯片，为了便于后文描述，将装载的另一个Micro-LED芯片称为备份Micro-LED芯片。\n\n[0064]需要说明的是，主Micro-LED芯片和备份Micro-LED芯片均为能够发出特定颜色的光的元器件，其中，特定颜色为红色、绿色或蓝色。同一子像素区10中的备份Micro-LED芯片和主Micro-LED芯片发出的光的颜色相同。对于任意一个子像素区10来说，若该子像素区10中的主Micro-LED芯片为坏点，则该子像素区10中的备份Micro-LED芯片可以替代主Micro-LED芯片，进行发光。\n\n[0065]图3为本申请实施例提供的一种Micro-LED芯片坏点修复方法流程图，如图3所示，该修复方法包括：\n\n[0066]步骤301，提供一基板1，该基板1上设有若干子像素区10，每个子像素区10中设有两个凹槽，这两个凹槽分别为主凹槽110和备份凹槽120。\n\n[0067]由于该基板1已在上文中详细说明，因此此处不再赘述。\n\n[0068]步骤302，通过流体巨量转移方法将巨量的主Micro-LED芯片转移至基板1，使每个子像素区10中的主凹槽110装载一个主Micro-LED芯片。\n\n[0069]其中，流体巨量转移方法指的是：将包含巨量的主Micro-LED芯片的悬浮液向基板1设有主凹槽110的一面倾倒，使该悬浮液流经基板1设有主凹槽110的一面，进而使每个主凹槽110中均有一个主Micro-LED芯片落入。由于只能使每个主凹槽110装载一个主Micro-LED芯片，因此，需要将所有的备份凹槽120的开口进行遮挡。由于遮挡方法众多，因此，本申请实施例对遮挡方法不作具体说明。\n\n[0070]步骤303，检测所有的主Micro-LED芯片以找出存在坏点的子像素区10。\n\n[0071]步骤304，通过流体巨量转移方法将若干备份Micro-LED芯片转移至基板1，使检测出坏点的每个子像素区10中的备份凹槽120装载一个备份Micro-LED芯片。\n\n[0072]其中，流体巨量转移方法指的是：将包含若干备份Micro-LED芯片的悬浮液向基板1设有备份凹槽120的一面倾倒，使该悬浮液流经基板1设有备份凹槽120的一面，进而使检测出坏点的每个子像素区10中的备份凹槽120中均有一个备份Micro-LED芯片落入。由于只能使检测出坏点的每个子像素区10中的备份凹槽120装载一个备份Micro-LED芯片，因此，将不需要装载备份Micro-LED芯片的备份凹槽120的开口进行遮挡。由于遮挡方法众多，因此，本申请实施例对遮挡方法不作具体说明。\n\n[0073]可以理解的是，基板1的每个子像素区10中均设有主凹槽110和备份凹槽120，使用流体巨量转移方法可以使每个子像素区10中的主凹槽110装载一个主Micro-LED芯片，当检测出所有的主Micro-LED芯片中存在坏点时，再次使用流体巨量转移方法使检测出坏点的每个子像素区10中的备份凹槽120装载一个备份Micro-LED芯片。由于同一子像素区10中的备份Micro-LED芯片和主Micro-LED芯片发出的光的颜色相同，因此，对于任意一个子像素区10来说，若该子像素区10中的主Micro-LED芯片为坏点，则该子像素区10中的备份Micro-LED芯片可以替代主Micro-LED芯片进行正常发光，从而完成对坏点的修复。由于修复过程中使用了流体巨量转移方法，因此，只需将包含若干备份Micro-LED芯片的悬浮液向基板1设有备份凹槽120的一面倾倒一次或少量几次即可完成修复，相比于现有的坏点剔除与定点单个放置的修复方法，提高了修复效率。\n\n[0074]在一些实施例中，如图1和图2所示，同一子像素区10中的主凹槽110和备份凹槽120具有相同的形状和大小。图1和图2中所示出的主凹槽110和备份凹槽120的形状为圆柱体，其截面形状为圆形，在其他实施例中，主凹槽110和备份凹槽120的形状还可为其他各种形状，本申请实施例对此不作具体限定。\n\n[0075]主凹槽110与其装载的主Micro-LED芯片的形状和大小相适配。即，主Micro-LED芯片能够大体上填满主凹槽110，且装载有一个主Micro-LED芯片的主凹槽110的剩余空间无法再装载其他主Micro-LED芯片或备份Micro-LED芯片。\n\n[0076]备份凹槽120与其装载的备份Micro-LED芯片的形状和大小相适配。即，备份Micro-LED芯片能够大体上填满备份凹槽120，且装载有一个备份Micro-LED芯片的备份凹槽120的剩余空间无法再装载其他备份Micro-LED芯片。\n\n[0077]在一些实施例中，如图4所示，将若干子像素区10划分为三个区域，将这三个区域分别称为第一区域100、第二区域200和第三区域300，每个区域内设有若干子像素区10。\n\n[0078]其中，位于同一区域内的主凹槽110具有相同的形状和大小，位于同一区域内的主凹槽110用于装载发出相同颜色的光的主Micro-LED芯片。\n\n[0079]由于同一子像素区10中的主凹槽110和备份凹槽120具有相同的形状和大小，因此，同一区域内的主凹槽110和备份凹槽120均具有相同的形状和大小；由于同一子像素区10中的备份Micro-LED芯片和主Micro-LED芯片发出的光的颜色相同，因此，同一区域内的备份Micro-LED芯片和主Micro-LED芯片发出的光的颜色相同。\n\n[0080]位于不同区域内的主凹槽具有相同的形状和不同的大小，位于不同区域内的主凹槽装载发出不同颜色的光的主Micro-LED芯片。\n\n[0081]如图4所示，在本申请实施例中，三个区域内的主凹槽110和备份凹槽120的截面形状均为圆形，但第一区域100内的主凹槽110的尺寸大于第二区域200内的主凹槽110的尺寸，第二区域200内的主凹槽110的尺寸大于第三区域300内的主凹槽110的尺寸。\n\n[0082]并且，第一区域100内的主凹槽110装载发出红光的主Micro-LED芯片，第二区域200内的主凹槽110装载发出绿光的主Micro-LED芯片，第三区域300内的主凹槽110装载发出蓝光的主Micro-LED芯片。\n\n[0083]在一些实施例中，每个主凹槽110和每个备份凹槽120的底部均设有两个电极，图2所示的每个斜线填充框代表一个电极。如图5所示，每个主凹槽110中的两个电极与第一焊接电路41电连接，每个备份凹槽120中的两个电极与第二焊接电路42电连接。\n\n[0084]其中，第一焊接电路41用于在通电后使每个主凹槽110中的两个电极分别与其装载的主Micro-LED芯片键合，从而使得每个主Micro-LED芯片与基板1实现电性连接。\n\n[0085]同样地，第二焊接电路42用于在通电后使每个备份Micro-LED芯片与装载其的备份凹槽120中的两个电极键合，从而使得每个备份Micro-LED芯片与基板1实现电性连接。\n\n[0086]在一些实施例中，每个电极的材料为共晶材料。共晶材料为熔点较低的材料，当第一焊接电路41通电后，每个主凹槽110中的两个电极可在短时间内熔化，实现与装载的主Micro-LED芯片的键合。当第二焊接电路42通电后，装载有备份Micro-LED芯片的每个备份凹槽120中的两个电极可在短时间内熔化，实现与装载的备份Micro-LED芯片的键合。\n\n[0087]在一些实施例中，如图6所示，步骤“通过流体巨量转移方法将巨量的主Micro-LED芯片转移至基板1，使每个子像素区10中的主凹槽110装载一个主Micro-LED芯片”包括以下步骤：\n\n[0088]步骤3021，使用正光阻填充所有的主凹槽110和所有的备份凹槽120。\n\n[0089]其中，正光阻为一种光敏材料，其照到光的部分会融于显影剂。在本申请实施例中，如图7所示，使用正光阻(点状区域)填充基板1中所有的主凹槽110和所有的备份凹槽120，并使之满足平坦化要求，便于后续悬浮液在其上流动。\n\n[0090]步骤3022，提供第一光罩20，如图8所示，第一光罩20上设有若干第一通孔210(圆形空白区域)，这若干第一通孔210分别与图1所示基板1中所有的主凹槽110对应设置，且每个第一通孔210的形状和大小与对应设置的主凹槽110的截面形状和截面大小相适配。即，若将第一光罩20覆盖于基板1设有主凹槽110的一面，则基板1中所有的主凹槽110均不被遮挡，而所有的备份凹槽120均被遮挡。\n\n[0091]步骤3023，使用第一光罩20覆盖基板1设有主凹槽110的一面。\n\n[0092]需要说明的是，覆盖时需要保证第一光罩20的若干第一通孔210与基板1中所有的主凹槽110的位置对应，即，保证基板1中所有的主凹槽110均不被遮挡，而所有的备份凹槽120均被遮挡。\n\n[0093]步骤3024，如图9所示，在覆盖完毕后，对基板1中所有的主凹槽110中的正光阻进行曝光，图9示出的多个箭头代表多束光照。曝光完毕后，使用显影剂对基板1中所有的主凹槽110中的正光阻进行显影，以去除基板1中所有的主凹槽110中的正光阻，去除所有的主凹槽110中正光阻后的基板1的结构如图10所示。\n\n[0094]步骤3025，去除第一光罩20。\n\n[0095]步骤3026，如图11所示，提供含有巨量的主Micro-LED芯片的主悬浮液，使主悬浮液流经基板1设有主凹槽110的一面，以使得每个主凹槽110装载一个主Micro-LED芯片。在图11中，波浪线代表主悬浮液，箭头代表主悬浮液的流向，6个不规则体分别代表6个主Micro-LED芯片。\n\n[0096]需要说明的是，对于图4中所示的基板1，由于基板1中所有的子像素区10包括三个区域，位于同一区域内的主凹槽110具有相同的形状和大小，且位于同一区域内的主凹槽110装载的主Micro-LED芯片发出的光的颜色相同，位于不同区域内的主凹槽110的具有相同的形状和不同的大小，且位于不同区域内的主凹槽110装载的主Micro-LED芯片发出的光的颜色不同。因此，此时需要配置三类悬浮液，同一悬浮液中含有的主Micro-LED芯片的形状、大小和颜色均相同，不同悬浮液中的主Micro-LED芯片形状相同，大小不同且发出的光的颜色不同。\n\n[0097]三类悬浮液配置完成后，按照包含的主Micro-LED芯片从大到小的顺序，依次将三类悬浮液向基板1设有主凹槽110的一面倾倒，完成主Micro-LED芯片的流体巨量转移过程。\n\n[0098]在一些实施例中，修复方法在步骤“通过流体巨量转移方法将若干备份Micro-LED芯片转移至基板1，使检测出坏点的每个子像素区10中的备份凹槽120装载一个备份Micro-LED芯片”之前还包括：\n\n[0099]将检测出坏点的每个子像素区10中的备份凹槽120标记为修复凹槽。\n\n[0100]在一些实施例中，如图12所示，步骤“通过流体巨量转移方法将若干备份Micro-LED芯片转移至基板1，使检测出坏点的每个子像素区10中的备份凹槽120装载一个备份Micro-LED芯片”包括以下步骤：\n\n[0101]步骤3041，提供第二光罩30，如图13所示，第二光罩30上设有若干第二通孔320(圆形空白区域)，这若干第二通孔320分别与图1所示基板1中所有的备份凹槽120对应设置，且每个第二通孔320的形状和大小与对应设置的备份凹槽120的截面形状和截面大小相适配。即，若将第二光罩30覆盖于基板1设有备份凹槽120的一面，则基板1中所有的备份凹槽120均不被遮挡，而所有的主凹槽110均被遮挡。\n\n[0102]步骤3042，使用第二光罩30覆盖基板1设有备份凹槽120的一面。\n\n[0103]需要说明的是，覆盖时需要保证第二光罩30的若干第二通孔320与基板1中所有的备份凹槽120的位置对应，即，保证基板1中所有的备份凹槽120均不被遮挡，而所有的主凹槽110均被遮挡。\n\n[0104]步骤3043，如图14所示，在覆盖完毕后，对所有修复凹槽中的正光阻进行曝光，图14示出的多个箭头代表单束光照。曝光完毕后，使用显影剂对基板1中所有的修复凹槽中的正光阻进行显影，以去除基板1中所有的修复凹槽中的正光阻，去除所有的修复凹槽中的正光阻后的基板1的结构如图15所示。\n\n[0105]步骤3044，去除第二光罩30。\n\n[0106]步骤3045，如图16所示，提供含有若干备份Micro-LED芯片的备份悬浮液，使备份悬浮液流经基板1设有备份凹槽120的一面，以使得每个修复凹槽装载一个备份Micro-LED芯片。在图16中，波浪线代表备份悬浮液，箭头代表备份悬浮液的流向。\n\n[0107]需要说明的是，对于图4中所示的基板1，由于基板1中所有的子像素区10包括三个区域，位于同一区域内的修复凹槽具有相同的形状和大小，且位于同一区域内的修复凹槽装载的备份Micro-LED芯片发出的光的颜色相同，位于不同区域内的修复凹槽的具有相同的形状和不同的大小，且位于不同区域内的修复凹槽装载的备份Micro-LED芯片发出的光的颜色不同。因此，此时需要配置三类悬浮液，同一悬浮液中含有的备份Micro-LED芯片的形状、大小和颜色均相同，不同悬浮液中的备份Micro-LED芯片形状相同，大小不同且发出的光的颜色不同。\n\n[0108]三类悬浮液配置完成后，按照包含的备份Micro-LED芯片从大到小的顺序，依次将三类悬浮液向基板1设有备份凹槽120的一面倾倒，完成备份Micro-LED芯片的流体巨量转移过程。\n\n[0109]在一些实施例中，步骤“检测所有的主Micro-LED芯片以找出存在坏点的子像素区10”包括以下步骤：\n\n[0110]将第一焊接电路41通电，使每个主凹槽110中的两个电极与装载的主Micro-LED芯片进行键合；基于紫外线检测方法或Micro-LED光电特性检测方法检测所有的主Micro-LED芯片，以找出存在坏点的子像素区10。\n\n[0111]需要说明的是，主凹槽110中的两个电极与主Micro-LED芯片进行键合后，可采用热退火方法，改善两个电极与主Micro-LED芯片间的应力关系，进而使两个电极与主Micro-LED芯片的键合性能更好。\n\n[0112]在一些实施例中，步骤“通过流体巨量转移方法将若干备份Micro-LED芯片转移至基板1，使检测出坏点的每个子像素区10中的备份凹槽120装载一个备份Micro-LED芯片”之后还包括：\n\n[0113]将第二焊接电路42通电，使检测出坏点的每个子像素区10中的备份凹槽120中的两个电极与装载的备份Micro-LED芯片进行键合。\n\n[0114]需要说明的是，备份凹槽120中的两个电极与备份Micro-LED芯片进行键合后，也可采用热退火方法，改善两个电极与备份Micro-LED芯片间的应力关系，进而使两个电极与备份Micro-LED芯片键合性能更好。\n\n[0115]综上所述，本申请实施例提供的修复方法，利用流体转移环境和转移特性对Micro-LED坏点进行更便捷的修复，具有工艺简单，修复效率高，成本低的特点，有利于提高Micro-LED显示器生产的良率。\n\n[0116]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0117]以上对本申请实施例进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10779, 23833, '技术领域\n\n[0001]本发明涉及显示面板制造技术领域，尤其涉及一种可卷曲柔性显示装置。\n\n背景技术\n\n[0002]OLED显示屏因具有轻薄、柔性可折叠弯曲等优点，目前被用于可折叠手机、智能手表以及车载显示器等柔性显示产品。弯折性能更佳的可卷缩产品相关概念也已经出现在各大展会，成为折叠之后的一大重点技术创新，为了达到整体可自由卷曲，OLED模组各叠层需使用柔性材料，提高模组在机构中的卷曲顺滑性。\n\n[0003]常规设计的可卷曲柔性显示机构边缘与卷曲机构边缘在设计时会预留部分间隙，以便模组可以在机构中自由卷曲，但是实际做成的可卷曲柔性显示机构常会出现卡顿、运动不顺畅等不良现象，不顺畅的其中一个原因就是模组边缘与机构在做卷曲运动时会产生摩擦阻力，且中间卷轴部分常会使用卷簧类机构，可以提供拉力自动将卷出状态下的柔性显示模组卷入机构内部，不同状态需要的力矩不同，不容易控制，容易损坏可卷曲柔性显示机构。\n\n[0004]因此，需要设计出一种新的结构，以解决现有技术中可卷曲柔性显示装置的卷轴常会出现卡顿、运动不顺畅等不良的现象，柔性显示装置边缘与机构在做卷曲运动时会产生摩擦阻力较大，中间不同状态下受到向内卷入的作用力大小不同的技术问题。\n\n发明内容\n\n[0005]本发明提供一种可卷曲柔性显示装置，能够解决现有技术中可卷曲柔性显示装置的卷轴常会出现卡顿、运动不顺畅等不良的现象，柔性显示装置边缘与机构在做卷曲运动时会产生摩擦阻力较大，中间不同状态下受到向内卷入的作用力大小不同的技术问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明提供一种可卷曲柔性显示装置，包括卷轴和柔性显示模组，所述柔性显示模组在外力的作用下围绕所述卷轴进行卷曲和展开，其中，所述柔性显示模组两边分别包裹有长条结构，所述长条结构两侧设置有第一滚动机构；所述卷轴的两端设置有第二滚动机构，所述柔性显示模组在伸缩过程中所述第一滚动机构围绕所述第二滚动机构滚动。\n\n[0008]根据本发明一优选实施例，所述长条结构的材质为柔性硅胶类材料，所述柔性硅胶类材料具有弹性和预应力。\n\n[0009]根据本发明一优选实施例，所述第二滚动机构包括固定在所述卷轴上底座、以及滑动安装在所述底座上的万向球，所述第一滚动机构包括圆形凹槽、以及安装在所述圆形凹槽的内壁上万向球，且所述第二滚动机构中万向球与所述圆形凹槽对位设置。\n\n[0010]根据本发明一优选实施例，所述第一滚动机构包括第一子滚动机构和第二子滚动机构，所述第一子滚动机构包括设置于所述柔性显示模组一侧的且沿长度方向排列的万向球，所述第二子滚动机构包括设置于所述柔性显示模组对侧的且沿长度方向排列的万向球；所述第二滚动机构包括第三子滚动机构和第四子滚动机构，所述第三子滚动机构包括嵌合在所述卷轴一端的万向球，所述第四子滚动机构包括嵌合在所述卷轴另一端的万向球，所述第一子滚动机构围绕所述第三子滚动机构滚动，所述第二子滚动机构围绕所述第四子滚动机构滚动。\n\n[0011]根据本发明一优选实施例，所述第一子滚动机构的展开长度大于所述第三子滚动机构的周长，所述第二子滚动机构的展开长度大于所述第四子滚动机构的的周长。\n\n[0012]根据本发明一优选实施例，所述卷轴两端对称设置有第二辅助滚动机构，所述长条结构对应所述第二辅助滚动机构设置有第一辅助滚动机构，所述第一辅助滚动机构围绕所述第二辅助滚动机构滚动。\n\n[0013]根据本发明一优选实施例，两个所述第二辅助滚动机构位于所述第二滚动机构的两侧，且两个所述第二辅助滚动机构的中心点与所述第二滚动机构的中心点形成等腰三角形。\n\n[0014]根据本发明一优选实施例，两个所述第二辅助滚动机构的之间的中心距离等于所述长条结构的厚度。\n\n[0015]根据本发明一优选实施例，所述显示装置还包括外壳，所述外壳内侧设置有螺旋形沟槽，所述柔性显示模组绕着所述卷轴沿着所述沟槽伸缩，所述外壳对应所述所述柔性显示模组入口处设置有挡板。\n\n[0016]根据本发明一优选实施例，所述柔性显示模组为OLED显示装置或Mini-LED显示装置。\n\n[0017]本发明的有益效果：本申请提供了一种可卷曲柔性显示装置，本申请柔性显示模组包裹有长条结构，该长条结构的材质为柔性硅胶类材料，且中间镶入了滑动阻力极小的万向球组件，搭配特殊的卷轴机构，同时卷轴对应的末端也设置有相应的万向球组件，取代现有的卷簧机构，由滑动变为滚动，减少了接触摩擦力，采用这种特殊的机构的可卷曲柔性显示装置可以大大减小摩擦力，改善常会出现卡顿、运动不顺畅等不良现象，同时可以改善中间不同状态下受到向内卷入的作用力大小不同的问题，提升用户体验。\n\n附图说明\n\n[0018]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1为本申请提供一种可卷曲柔性显示装置结构示意图；\n\n[0020]图2为本申请提供一种可卷曲柔性显示装置卷缩结构示意图；\n\n[0021]图3为本申请提供一种可卷曲柔性显示装置卷缩结构截面结构示意图；\n\n[0022]图4为本申请提供一种可卷曲柔性显示装置中一种第一滚动机构和第二滚动机构结构示意图；\n\n[0023]图5为本申请提供一种可卷曲柔性显示装置中一种第一滚动机构和第二滚动机构局部示意图；\n\n[0024]图6为本申请提供一种可卷曲柔性显示装置中又一种第一滚动机构和第二滚动机构结构示意图；\n\n[0025]图7为本申请提供一种可卷曲柔性显示装置中又一种第一滚动机构和第二滚动机构局部示意图。\n\n具体实施方式\n\n[0026]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示，图中虚线表示在结构中并不存在的，仅仅说明结构的形状和位置。\n\n[0027]本发明针对现有技术中可卷曲柔性显示装置的卷轴常会出现卡顿、运动不顺畅等不良的现象，柔性显示装置边缘与机构在做卷曲运动时会产生摩擦阻力较大，中间不同状态下受到向内卷入的作用力大小不同的技术问题，本实施例能够解决该缺陷。\n\n[0028]如图1和图2所示，本申请提供一种可卷曲柔性显示装置，包括卷轴103、柔性显示模组101、包裹卷轴103和柔性显示模组101的外壳102，柔性显示模组101随着卷轴103旋转而卷曲和展开，卷轴103连接有电动装置或气动装置，电动装置或气动装置控制卷轴103顺时针转动或逆时针转动，卷轴103顺时针转动，柔性显示模组101卷缩，卷轴103逆时针转动，柔性显示模组101展开，其中，柔性显示模组101优选为OLED显示装置或Mini-LED显示装置。为了解决柔性显示模组101在展开或卷缩过程承受摩擦力较大，中间不同状态下受到向内卷入的作用力大小不同，造成柔性显示装置101连接的卷轴103常会出现卡顿、运动不顺畅等不良的现象，本申请实施例在柔性显示模组101两边分别包裹有长条结构1012，长条结构1012两侧设置有第一滚动机构，第一滚动机构沿长条结构1012边缘线性阵列分布；卷轴103的末端设置有与第一滚动机构对位的第二滚动机构，柔性显示模组101过程中第一滚动机构围绕第二滚动机构滚动。第二滚动机构包括固定在卷轴上底座、以及滑动安装在底座上的万向球，第一滚动机构包括圆形凹槽、以及安装在圆形凹槽的内壁上万向球，且第二滚动机构中万向球与圆形凹槽对位设置，第一滚动机构中万向球尺寸小于第二滚动机构中万向球的尺寸。例如长条结构1012包括相对称设置的左侧长条结构10121和右侧长条结构10122，左侧长条结构10121和右侧长条结构10122的截面优选为长方形，长条结构1012的材质为柔性硅胶类材料，该柔性硅胶类材料具有弹性和预应力，左侧长条结构10121和右侧长条结构10122分别对称设置有第一滚动机构，卷轴103的末端设置有与第一滚动机构对位的第二滚动机构，多个第一滚动机构围绕第二滚动机构设置以形成滚动副，第一滚动机构为万向球组件，第二滚动机构也为万向球组件，在另一实施例中第二滚动机构可以为滚动滚轴，也可以为滑动轨道。\n\n[0029]如图3所示，本申请提供一种可卷曲柔性显示装置卷缩结构截面结构示意图，柔性显示模组101按照预定的轨迹卷缩在卷轴103上，外壳102两侧设置有螺旋形沟槽，柔性显示模组101绕着卷轴103沿着沟槽伸缩，外壳102对于柔性显示模组101入口处设置有挡板1021。挡板1021对于入口设置有矩形开口，开口的宽度稍微大于柔性显示模组101的厚度。\n\n[0030]如图4所示，本申请提供一种可卷曲柔性显示装置中一种第一滚动机构和第二滚动机构结构示意图，本申请仅画出左侧部分，右侧部分与左侧部分结构相同，第一滚动机构包括第一子滚动机构和第二子滚动机构，左侧长条结构10121设置有第一子滚动机构1014，右侧长条结构10122设置有第二子滚动机构(图中未画出)，第一滚动机构包括第一子滚动机构和第二子滚动机构，第一子滚动机构1014包括设置于柔性显示模组101一侧的且沿长度方向排列的万向球，第二子滚动机构包括设置于柔性显示模组对侧的且沿长度方向排列的万向球；第二滚动机构包括第三子滚动机构1031和第四子滚动机构，第三子滚动机构1031包括嵌合在卷轴一端的万向球，第四子滚动机构包括嵌合在卷轴另一端的万向球，第一子滚动机构1014围绕第三子滚动机构1031滚动，第二子滚动机构围绕第四子滚动机构滚动。第一子滚动机构1014与第三子滚动机构1031对位设置，第二子滚动机构与第四子滚动机构对位设置。第一子滚动机构1014和第二子滚动机构相同，第三子滚动机构1031和第四子滚动机构相同，如图5所示，第一子滚动机构1014围绕第三子滚动机构1031的弧面滚动，第二子滚动机构围绕第四子滚动机构的弧面滚动，为了便于长条结构1012可以完全包裹在卷轴103，第一子滚动机构1014的展开长度大于第三子滚动机构1031的周长，第二子滚动机构的展开长度大于第四子滚动机构的的周长。\n\n[0031]如图6和图7所示，本申请提供一种可卷曲柔性显示装置中另一种第一滚动机构和第二滚动机构结构结构示意图，本申请仅画出左侧部分，右侧部分与左侧部分结构相同，卷轴103两端对称设置有第二辅助滚动机构1032和第二辅助滚动机构1033，长条结构1012对应第二辅助滚动机构设置有第一辅助滚动机构1015和第一辅助滚动机构1016，第一辅助滚动机构1015、第一辅助滚动机构1016第二辅助滚动机构1032、以及第二辅助滚动机构1033均为万向球组件。第一辅助滚动机构1015围绕第二辅助滚动机构1032滚动，第一辅助滚动机构1016围绕第二辅助滚动机构1033滚动。第二辅助滚动机构1032和第二辅助滚动机构1033位于第二滚动机构1031的两侧，且第二辅助滚动机构1032和第二辅助滚动机构1033的中心点与第二滚动机构的中心点形成等腰三角形。第二辅助滚动机构1032和第二辅助滚动机构1033的之间的中心距离等于长条结构1012的厚度，这样一来，长条结构1012卡持在第二辅助滚动机构1032和第二辅助滚动机构1033之间，避免柔性显示模组101在伸缩过程中错位。\n\n[0032]本申请提供了一种可卷曲柔性显示装置，本申请柔性显示模组包裹有长条结构，该长条结构的材质为柔性硅胶类材料，且中间镶入了滑动阻力极小的万向球组件，搭配特殊的卷轴机构，同时卷轴对应的末端也设置有相应的万向球组件，取代现有的卷簧机构，由滑动变为滚动，减少了接触摩擦力，采用这种特殊的机构的可卷曲柔性显示装置可以大大减小摩擦力，改善常会出现卡顿、运动不顺畅等不良现象，同时可以改善中间不同状态下受到向内卷入的作用力大小不同的问题，提升用户体验。\n\n[0033]综上，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及显示面板制造技术领域，尤其涉及一种可卷曲柔性显示装置。\n\n背景技术\n\n[0002]OLED显示屏因具有轻薄、柔性可折叠弯曲等优点，目前被用于可折叠手机、智能手表以及车载显示器等柔性显示产品。弯折性能更佳的可卷缩产品相关概念也已经出现在各大展会，成为折叠之后的一大重点技术创新，为了达到整体可自由卷曲，OLED模组各叠层需使用柔性材料，提高模组在机构中的卷曲顺滑性。\n\n[0003]常规设计的可卷曲柔性显示机构边缘与卷曲机构边缘在设计时会预留部分间隙，以便模组可以在机构中自由卷曲，但是实际做成的可卷曲柔性显示机构常会出现卡顿、运动不顺畅等不良现象，不顺畅的其中一个原因就是模组边缘与机构在做卷曲运动时会产生摩擦阻力，且中间卷轴部分常会使用卷簧类机构，可以提供拉力自动将卷出状态下的柔性显示模组卷入机构内部，不同状态需要的力矩不同，不容易控制，容易损坏可卷曲柔性显示机构。\n\n[0004]因此，需要设计出一种新的结构，以解决现有技术中可卷曲柔性显示装置的卷轴常会出现卡顿、运动不顺畅等不良的现象，柔性显示装置边缘与机构在做卷曲运动时会产生摩擦阻力较大，中间不同状态下受到向内卷入的作用力大小不同的技术问题。\n\n发明内容\n\n[0005]本发明提供一种可卷曲柔性显示装置，能够解决现有技术中可卷曲柔性显示装置的卷轴常会出现卡顿、运动不顺畅等不良的现象，柔性显示装置边缘与机构在做卷曲运动时会产生摩擦阻力较大，中间不同状态下受到向内卷入的作用力大小不同的技术问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明提供一种可卷曲柔性显示装置，包括卷轴和柔性显示模组，所述柔性显示模组在外力的作用下围绕所述卷轴进行卷曲和展开，其中，所述柔性显示模组两边分别包裹有长条结构，所述长条结构两侧设置有第一滚动机构；所述卷轴的两端设置有第二滚动机构，所述柔性显示模组在伸缩过程中所述第一滚动机构围绕所述第二滚动机构滚动。\n\n[0008]根据本发明一优选实施例，所述长条结构的材质为柔性硅胶类材料，所述柔性硅胶类材料具有弹性和预应力。\n\n[0009]根据本发明一优选实施例，所述第二滚动机构包括固定在所述卷轴上底座、以及滑动安装在所述底座上的万向球，所述第一滚动机构包括圆形凹槽、以及安装在所述圆形凹槽的内壁上万向球，且所述第二滚动机构中万向球与所述圆形凹槽对位设置。\n\n[0010]根据本发明一优选实施例，所述第一滚动机构包括第一子滚动机构和第二子滚动机构，所述第一子滚动机构包括设置于所述柔性显示模组一侧的且沿长度方向排列的万向球，所述第二子滚动机构包括设置于所述柔性显示模组对侧的且沿长度方向排列的万向球；所述第二滚动机构包括第三子滚动机构和第四子滚动机构，所述第三子滚动机构包括嵌合在所述卷轴一端的万向球，所述第四子滚动机构包括嵌合在所述卷轴另一端的万向球，所述第一子滚动机构围绕所述第三子滚动机构滚动，所述第二子滚动机构围绕所述第四子滚动机构滚动。\n\n[0011]根据本发明一优选实施例，所述第一子滚动机构的展开长度大于所述第三子滚动机构的周长，所述第二子滚动机构的展开长度大于所述第四子滚动机构的的周长。\n\n[0012]根据本发明一优选实施例，所述卷轴两端对称设置有第二辅助滚动机构，所述长条结构对应所述第二辅助滚动机构设置有第一辅助滚动机构，所述第一辅助滚动机构围绕所述第二辅助滚动机构滚动。\n\n[0013]根据本发明一优选实施例，两个所述第二辅助滚动机构位于所述第二滚动机构的两侧，且两个所述第二辅助滚动机构的中心点与所述第二滚动机构的中心点形成等腰三角形。\n\n[0014]根据本发明一优选实施例，两个所述第二辅助滚动机构的之间的中心距离等于所述长条结构的厚度。\n\n[0015]根据本发明一优选实施例，所述显示装置还包括外壳，所述外壳内侧设置有螺旋形沟槽，所述柔性显示模组绕着所述卷轴沿着所述沟槽伸缩，所述外壳对应所述所述柔性显示模组入口处设置有挡板。\n\n[0016]根据本发明一优选实施例，所述柔性显示模组为OLED显示装置或Mini-LED显示装置。\n\n[0017]本发明的有益效果：本申请提供了一种可卷曲柔性显示装置，本申请柔性显示模组包裹有长条结构，该长条结构的材质为柔性硅胶类材料，且中间镶入了滑动阻力极小的万向球组件，搭配特殊的卷轴机构，同时卷轴对应的末端也设置有相应的万向球组件，取代现有的卷簧机构，由滑动变为滚动，减少了接触摩擦力，采用这种特殊的机构的可卷曲柔性显示装置可以大大减小摩擦力，改善常会出现卡顿、运动不顺畅等不良现象，同时可以改善中间不同状态下受到向内卷入的作用力大小不同的问题，提升用户体验。\n\n附图说明\n\n[0018]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1为本申请提供一种可卷曲柔性显示装置结构示意图；\n\n[0020]图2为本申请提供一种可卷曲柔性显示装置卷缩结构示意图；\n\n[0021]图3为本申请提供一种可卷曲柔性显示装置卷缩结构截面结构示意图；\n\n[0022]图4为本申请提供一种可卷曲柔性显示装置中一种第一滚动机构和第二滚动机构结构示意图；\n\n[0023]图5为本申请提供一种可卷曲柔性显示装置中一种第一滚动机构和第二滚动机构局部示意图；\n\n[0024]图6为本申请提供一种可卷曲柔性显示装置中又一种第一滚动机构和第二滚动机构结构示意图；\n\n[0025]图7为本申请提供一种可卷曲柔性显示装置中又一种第一滚动机构和第二滚动机构局部示意图。\n\n具体实施方式\n\n[0026]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示，图中虚线表示在结构中并不存在的，仅仅说明结构的形状和位置。\n\n[0027]本发明针对现有技术中可卷曲柔性显示装置的卷轴常会出现卡顿、运动不顺畅等不良的现象，柔性显示装置边缘与机构在做卷曲运动时会产生摩擦阻力较大，中间不同状态下受到向内卷入的作用力大小不同的技术问题，本实施例能够解决该缺陷。\n\n[0028]如图1和图2所示，本申请提供一种可卷曲柔性显示装置，包括卷轴103、柔性显示模组101、包裹卷轴103和柔性显示模组101的外壳102，柔性显示模组101随着卷轴103旋转而卷曲和展开，卷轴103连接有电动装置或气动装置，电动装置或气动装置控制卷轴103顺时针转动或逆时针转动，卷轴103顺时针转动，柔性显示模组101卷缩，卷轴103逆时针转动，柔性显示模组101展开，其中，柔性显示模组101优选为OLED显示装置或Mini-LED显示装置。为了解决柔性显示模组101在展开或卷缩过程承受摩擦力较大，中间不同状态下受到向内卷入的作用力大小不同，造成柔性显示装置101连接的卷轴103常会出现卡顿、运动不顺畅等不良的现象，本申请实施例在柔性显示模组101两边分别包裹有长条结构1012，长条结构1012两侧设置有第一滚动机构，第一滚动机构沿长条结构1012边缘线性阵列分布；卷轴103的末端设置有与第一滚动机构对位的第二滚动机构，柔性显示模组101过程中第一滚动机构围绕第二滚动机构滚动。第二滚动机构包括固定在卷轴上底座、以及滑动安装在底座上的万向球，第一滚动机构包括圆形凹槽、以及安装在圆形凹槽的内壁上万向球，且第二滚动机构中万向球与圆形凹槽对位设置，第一滚动机构中万向球尺寸小于第二滚动机构中万向球的尺寸。例如长条结构1012包括相对称设置的左侧长条结构10121和右侧长条结构10122，左侧长条结构10121和右侧长条结构10122的截面优选为长方形，长条结构1012的材质为柔性硅胶类材料，该柔性硅胶类材料具有弹性和预应力，左侧长条结构10121和右侧长条结构10122分别对称设置有第一滚动机构，卷轴103的末端设置有与第一滚动机构对位的第二滚动机构，多个第一滚动机构围绕第二滚动机构设置以形成滚动副，第一滚动机构为万向球组件，第二滚动机构也为万向球组件，在另一实施例中第二滚动机构可以为滚动滚轴，也可以为滑动轨道。\n\n[0029]如图3所示，本申请提供一种可卷曲柔性显示装置卷缩结构截面结构示意图，柔性显示模组101按照预定的轨迹卷缩在卷轴103上，外壳102两侧设置有螺旋形沟槽，柔性显示模组101绕着卷轴103沿着沟槽伸缩，外壳102对于柔性显示模组101入口处设置有挡板1021。挡板1021对于入口设置有矩形开口，开口的宽度稍微大于柔性显示模组101的厚度。\n\n[0030]如图4所示，本申请提供一种可卷曲柔性显示装置中一种第一滚动机构和第二滚动机构结构示意图，本申请仅画出左侧部分，右侧部分与左侧部分结构相同，第一滚动机构包括第一子滚动机构和第二子滚动机构，左侧长条结构10121设置有第一子滚动机构1014，右侧长条结构10122设置有第二子滚动机构(图中未画出)，第一滚动机构包括第一子滚动机构和第二子滚动机构，第一子滚动机构1014包括设置于柔性显示模组101一侧的且沿长度方向排列的万向球，第二子滚动机构包括设置于柔性显示模组对侧的且沿长度方向排列的万向球；第二滚动机构包括第三子滚动机构1031和第四子滚动机构，第三子滚动机构1031包括嵌合在卷轴一端的万向球，第四子滚动机构包括嵌合在卷轴另一端的万向球，第一子滚动机构1014围绕第三子滚动机构1031滚动，第二子滚动机构围绕第四子滚动机构滚动。第一子滚动机构1014与第三子滚动机构1031对位设置，第二子滚动机构与第四子滚动机构对位设置。第一子滚动机构1014和第二子滚动机构相同，第三子滚动机构1031和第四子滚动机构相同，如图5所示，第一子滚动机构1014围绕第三子滚动机构1031的弧面滚动，第二子滚动机构围绕第四子滚动机构的弧面滚动，为了便于长条结构1012可以完全包裹在卷轴103，第一子滚动机构1014的展开长度大于第三子滚动机构1031的周长，第二子滚动机构的展开长度大于第四子滚动机构的的周长。\n\n[0031]如图6和图7所示，本申请提供一种可卷曲柔性显示装置中另一种第一滚动机构和第二滚动机构结构结构示意图，本申请仅画出左侧部分，右侧部分与左侧部分结构相同，卷轴103两端对称设置有第二辅助滚动机构1032和第二辅助滚动机构1033，长条结构1012对应第二辅助滚动机构设置有第一辅助滚动机构1015和第一辅助滚动机构1016，第一辅助滚动机构1015、第一辅助滚动机构1016第二辅助滚动机构1032、以及第二辅助滚动机构1033均为万向球组件。第一辅助滚动机构1015围绕第二辅助滚动机构1032滚动，第一辅助滚动机构1016围绕第二辅助滚动机构1033滚动。第二辅助滚动机构1032和第二辅助滚动机构1033位于第二滚动机构1031的两侧，且第二辅助滚动机构1032和第二辅助滚动机构1033的中心点与第二滚动机构的中心点形成等腰三角形。第二辅助滚动机构1032和第二辅助滚动机构1033的之间的中心距离等于长条结构1012的厚度，这样一来，长条结构1012卡持在第二辅助滚动机构1032和第二辅助滚动机构1033之间，避免柔性显示模组101在伸缩过程中错位。\n\n[0032]本申请提供了一种可卷曲柔性显示装置，本申请柔性显示模组包裹有长条结构，该长条结构的材质为柔性硅胶类材料，且中间镶入了滑动阻力极小的万向球组件，搭配特殊的卷轴机构，同时卷轴对应的末端也设置有相应的万向球组件，取代现有的卷簧机构，由滑动变为滚动，减少了接触摩擦力，采用这种特殊的机构的可卷曲柔性显示装置可以大大减小摩擦力，改善常会出现卡顿、运动不顺畅等不良现象，同时可以改善中间不同状态下受到向内卷入的作用力大小不同的问题，提升用户体验。\n\n[0033]综上，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10780, 23834, '技术领域\n\n[0001]本申请涉及面板制造技术领域，特别涉及一种微型显示面板、制程方法及拼接显示面板。\n\n背景技术\n\n[0002]微型发光二极管(Mini/Micro-Light Emitting Diode,Mini/Micro-LED)显示作为下一代显示技术，优秀的显示效果，色彩还原性强，宽视角，高刷新率，高对比度，高稳定性，低功耗，高灰度等优势，显现出比液晶显示(Liquid Crystal Display,LCD)和有机发光二极管(Organic Light Emitting Diode,OLED)显示更优异的性能。从长远来看，随着转移等关键技术的突破，微型发光二极管或将全面进入从小屏到大屏的各类显示领域。\n\n[0003]现有的顶发光的柔性微型发光二极管拼接技术方案，在该方案中，由于扇出区向玻璃侧弯曲，而切割后的玻璃断面比较粗糙，可能出先尖刺等问题，从而在弯折过程中可能损坏绝缘层。\n\n[0004]因此，提供一种在弯折过程中不容易损坏绝缘层的拼接显示面板成为本领域技术人员亟待解决的技术问题。\n\n发明内容\n\n[0005]本申请实施例提供一种微型显示面板、制程方法及拼接显示面板。可以防止在弯折过程中损坏绝缘层。\n\n[0006]本申请实施例提供一种微型显示面板，包括：\n\n[0007]玻璃基板，所述玻璃基板具有相对设置的第一面和第二面，以及相对设置的第一端和第二端；\n\n[0008]绝缘层，所述绝缘层设置在所述第一面；\n\n[0009]薄膜晶体管层，所述薄膜晶体管层设置在所述绝缘层远离所述玻璃基板的一面；\n\n[0010]微型发光二极管层，所述微型发光二极管层设置在所述薄膜晶体管层远离所述绝缘层的一面；\n\n[0011]其中，所述绝缘层、薄膜晶体管层以及微型发光二极管层靠近所述第一端的一端朝向远离所述第二面的一侧弯折，所述绝缘层靠近所述第一端的端部与所述第一端之间具有空隙。\n\n[0012]在一些实施例中，还包括封装层，所述封装层部分覆盖在所述薄膜晶体管远离所述绝缘层的一面。\n\n[0013]在一些实施例中，所述封装层靠近所述第一端的一端与所述第一端对齐，所述封装层远离所述第一端的一端延伸到所述第二端外侧。\n\n[0014]在一些实施例中，还包括保护胶层，所述保护胶层设在所述封装层远离所述绝缘层的一面。\n\n[0015]在一些实施例中，所述保护胶层靠近所述第一端的一端与所述第一端对齐，所述保护胶层远离所述第一端的一端与所述绝缘层远离所述第二端的一端对齐。\n\n[0016]在一些实施例中，还包括集成电路模块，所述集成电路模块设置在所述封装层上。\n\n[0017]在一些实施例中，还包括印刷电路板，所述印刷电路板与所述封装层远离所述第二端的一端连接。\n\n[0018]本申请实施例提供一种微型显示面板的制程方法，包括：\n\n[0019]提供一玻璃基板，所述玻璃基板具有相对设置的第一面和第二面，以及相对设置的第一端和第二端；\n\n[0020]在所述第一面设置绝缘层；\n\n[0021]在所述绝缘层远离所述玻璃基板的一面设置薄膜晶体管层；\n\n[0022]在所述薄膜晶体管层远离所述绝缘层的一面设置微型发光二极管层；\n\n[0023]将所述绝缘层、薄膜晶体管层以及微型发光二极管层靠近所述第一端一端的朝向远离第二面的一侧弯折，所述绝缘层靠近所述第一端的端部与所述第一端之间具有空隙。\n\n[0024]在一些实施例中，在所述薄膜晶体管层远离所述绝缘层的一面设置微型发光二极管层之后，包括：\n\n[0025]将所述玻璃基板的第一端通过激光部分切除。\n\n[0026]本申请实施例提供一种拼接显示面板，包括多个微型显示面板，多个所述微型显示面板紧密拼接，所述微型显示面板为以上所述的微型显示面板。\n\n[0027]本申请实施例中提供微型显示面板、制程方法及拼接显示面板，本申请实施例中微型显示面板包括玻璃基板、绝缘层、薄膜晶体管层以及微型发光二极管层，所述玻璃基板具有相对设置的第一面和第二面，以及相对设置的第一端和第二端，所述绝缘层设置在所述第一面，所述薄膜晶体管层设置在所述绝缘层远离所述玻璃基板的一面，所述微型发光二极管层设置在所述薄膜晶体管层远离所述绝缘层的一面；其中，所述绝缘层、薄膜晶体管层以及微型发光二极管层靠近所述第一端的一端朝向远离所述第二面的一侧弯折，所述绝缘层靠近所述第一端的端部与所述第一端之间具有空隙。本申请将微型发光二极管层设置在所述薄膜晶体管层远离所述绝缘层的一面，这样可以实现微型显示面板的底发光，由于将绝缘层、薄膜晶体管层以及微型发光二极管层靠近所述第一端的一端朝向远离所述第二面的一侧扇出弯折，所述绝缘层靠近所述第一端的端部与所述第一端之间具有空隙。因此，在微型显示面板与微型显示面板拼接时，不会挤压绝缘层、薄膜晶体管层以及微型发光二极管层。这样可以防止在弯折过程中损坏绝缘层。同时，这种方式在拼装过程中缝隙较小。\n\n附图说明\n\n[0028]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。\n\n[0029]图1为本申请实施例提供的微型显示面板结构示意图。\n\n[0030]图2为本申请实施例提供的微型显示面板制程方法流程示意图。\n\n[0031]图3为本申请实施例提供的另一种微型显示面板制程方法流程示意图。\n\n[0032]图4为本申请实施例提供的另一种微型显示面板制程方法场景示意图。\n\n[0033]图5为本申请实施例提供的拼接显示面板结构示意图。\n\n具体实施方式\n\n[0034]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0035]本申请实施例中提供一种微型显示面板、制程方法及拼接显示面板。以下对本申请实施例的彩微型显示面板做详细介绍。\n\n[0036]请参阅图1，图1为本申请实施例提供的一种微型显示面板结构示意图。其中，本申请实施例中微型显示面板10包括玻璃基板11、绝缘层12、薄膜晶体管层13以及微型发光二极管层14，所述玻璃基板11具有相对设置的第一面11a和第二面11b，以及相对设置的第一端11c和第二端11d，所述绝缘层12设置在所述第一面11a，所述薄膜晶体管层13设置在所述绝缘层12远离所述玻璃基板11的一面，所述微型发光二极管层14设置在所述薄膜晶体管层13远离所述绝缘层12的一面；其中，所述绝缘层12、薄膜晶体管层13以及微型发光二极管层靠近所述第一端11c的一端朝向远离所述第二面11b的一侧弯折，所述绝缘层12靠近所述第一端11c的端部与所述第一端11c之间具有空隙。\n\n[0037]需要说明的是，第一面11a可以为玻璃基板11的上表面，第二面11b可以为玻璃基板11的下表面。当然，第一面11a也可以为玻璃基板11的下表面，第二面11b可以为玻璃基板11的上表面。本申请实施例中不做特殊说明的情况下，默认为第一面11a为玻璃基板11的上表面，第二面11b为玻璃基板11的下表面。第一端11c为玻璃基板11的右侧端部，第二端11d为玻璃基板11的左侧端部。当然，在一些实施例中，可以将第一端11c和第二端11d的方位互换。本申请实施例中不做特殊说明的情况下，默认为第一端11c为玻璃基板11的右侧端部，第二端11d为玻璃基板11的左侧端部。\n\n[0038]另外的，绝缘层12为聚酰亚胺薄膜。当然绝缘层12也可以采用其他材料。本实施例中对绝缘层12采用的材料不过多赘述。\n\n[0039]另外的，薄膜晶体管层13为作为微型显示面板的开关。微型显示面板10上的每个液晶像素点都是由薄膜晶体管来驱动。\n\n[0040]另外的，微型发光二极管层包括多个微型发光二极管，具体的，多个微型发光二极管可以呈阵列排布形成微型发光二极管层。\n\n[0041]另外的，所述绝缘层12靠近所述第一端11c的端部与所述第一端11c之间具有空隙。因为具有该间隙，因此，在微型显示面板10与微型显示面板10拼接的过程中，微型显示面板10中的绝缘层12不会相互摩擦，从而避免绝缘层12断裂。\n\n[0042]其中，微型显示面板10还包括封装层15，所述封装层15部分覆盖在所述薄膜晶体管远离所述绝缘层12的一面。\n\n[0043]需要说明的是，封装层15设在靠近所述第一端11c的一侧，所述封装层15可以通过胶水黏贴在薄膜晶体管层13上。封装层15为覆晶薄膜。封装层15主要用于封装集成电路模块17。\n\n[0044]其中，所述封装层15靠近所述第一端11c的一端与所述第一端11c对齐，所述封装层15远离所述第一端11c的一端延伸到所述第二端11d外侧。\n\n[0045]需要说明的是，封装层15远离所述第一端11c的一端延伸所述第二端11d外侧，可以在封装集成电路模块17以后，方便弯折。\n\n[0046]其中，微型发光二极管层14上设有高反射率封装层141。具体的，高反射率封装层141可以为uv膜。\n\n[0047]其中，微型显示面板10还包括保护胶层16，所述保护胶层16设在所述封装层15远离所述绝缘层12的一面。\n\n[0048]需要说明的是，保护胶层16可以为黑色胶层也可以是透明胶层。当然保护胶层16还可以是其他胶层。可以理解的是，保护胶层16可以保护封装层15不被刮伤损坏，从而提报微型显示面板10的使用寿命。\n\n[0049]其中，所述保护胶层16靠近所述第一端11c的一端与所述第一端11c对齐，所述保护胶层16远离所述第一端11c的一端与所述绝缘层12远离所述第二端11d的一端对齐。\n\n[0050]由于，保护胶层16靠近所述第一端11c的一端与所述第一端11c对齐，所述保护胶层16远离所述第一端11c的一端与所述绝缘层12远离所述第二端11d的一端对齐。这样恰好保护弯折部分的封装层15。这样在既达到保护目的情况下，也不会浪费材料。\n\n[0051]其中，微型显示面板10还包括集成电路模块17，所述集成电路模块17设置在所述封装层15上。\n\n[0052]其中，微型显示面板10还包括印刷电路板18，所述印刷电路板18与所述封装层15远离所述第二端11d的一端连接。\n\n[0053]本申请实施例中微型显示面板10包括玻璃基板11、绝缘层12、薄膜晶体管层13以及微型发光二极管层，所述玻璃基板11具有相对设置的第一面11a和第二面11b，以及相对设置的第一端11c和第二端11d，所述绝缘层12设置在所述第一面11a，所述薄膜晶体管层13设置在所述绝缘层12远离所述玻璃基板11的一面，所述微型发光二极管层14设置在所述薄膜晶体管层13远离所述绝缘层12的一面；其中，所述绝缘层12、薄膜晶体管层13以及微型发光二极管层靠近所述第一端11c的一端朝向远离所述第二面11b的一侧弯折，所述绝缘层12靠近所述第一端11c的端部与所述第一端11c之间具有空隙。本申请将微型发光二极管层14设置在所述薄膜晶体管层13远离所述绝缘层12的一面，这样可以实现微型显示面板10的底发光，由于绝缘层12、薄膜晶体管层13以及微型发光二极管层靠近所述第一端11c的一端朝向远离所述第二面11b的一侧扇出区弯折，所述绝缘层12靠近所述第一端11c的端部与所述第一端11c之间具有空隙。因此，在微型显示面板10与微型显示面板10拼接时，不会挤压绝缘层12、薄膜晶体管层13以及微型发光二极管层。这样可以防止在弯折过程中损坏绝缘层12。同时，这种方式在拼装过程中缝隙较小。\n\n[0054]请参阅图2，图2为本申请实施例提供的一种微型显示面板制程方法流程示意图。其中，本申请实施例提供微型显示面板的制程方法，包括步骤：\n\n[0055]201、提供一玻璃基板，所述玻璃基板具有相对设置的第一面和第二面，以及相对设置的第一端和第二端。\n\n[0056]需要说明的是，第一面可以为玻璃基板的上表面，第二面可以为玻璃基板的下表面。当然，第一面也可以为玻璃基板的下表面，第二面可以为玻璃基板的上表面。本申请实施例中不做特殊说明的情况下，默认为第一面为玻璃基板的上表面，第二面为玻璃基板的下表面。第一端为玻璃基板的左侧端部，第二端为玻璃基板的右侧端部。当然，在一些实施例中，可以将第一端和第二端的方位互换。本申请实施例中不做特殊说明的情况下，默认为第一端为玻璃基板的左侧端部，第二端为玻璃基板的右侧端部。\n\n[0057]202、在所述第一面设置绝缘层。\n\n[0058]需要说明的是，绝缘层为聚酰亚胺薄膜。当然绝缘层也可以采用其他材料。本实施例中对绝缘层采用的材料不过多赘述。\n\n[0059]203、在所述绝缘层远离所述玻璃基板的一面设置薄膜晶体管层。\n\n[0060]需要说明的是，薄膜晶体管层为作为微型显示面板的开关。微型显示面板上的每个液晶像素点都是由薄膜晶体管来驱动。\n\n[0061]204、在所述薄膜晶体管层远离所述绝缘层的一面设置微型发光二极管层。\n\n[0062]需要说明的是，微型发光二极管层包括多个微型发光二极管，具体的，多个微型发光二极管可以呈阵列排布形成微型发光二极管层。\n\n[0063]205、将所述绝缘层、薄膜晶体管层以及微型发光二极管层靠近所述第一端一端的朝向远离第二面的一侧弯折，所述绝缘层靠近所述第一端的端部与所述第一端之间具有空隙。\n\n[0064]由于采用上述方法，在微型显示面板与微型显示面板拼接时，不会挤压绝缘层、薄膜晶体管层以及微型发光二极管层。这样可以防止在弯折过程中损坏绝缘层。同时，这种方式在拼装过程中缝隙较小。\n\n[0065]请参阅图3和图4，图3为本申请实施例提供的另一种微型显示面板制程方法流程示意图。图4为本申请实施例提供的另一种微型显示面板制程方法场景示意图。\n\n[0066]其中，本申请实施例提供微型显示面板的制程方法，包括步骤：\n\n[0067]301、提供一玻璃基板，所述玻璃基板具有相对设置的第一面和第二面，以及相对设置的第一端和第二端。\n\n[0068]302、在所述第一面设置绝缘层。\n\n[0069]303、在所述绝缘层远离所述玻璃基板的一面设置薄膜晶体管层。\n\n[0070]304、在所述薄膜晶体管层远离所述绝缘层的一面设置微型发光二极管层。\n\n[0071]305、在所述薄膜晶体管远离所述绝缘层的一面部分覆盖有封装层。\n\n[0072]306、在所述封装层远离所述绝缘层的一面设置有保护胶层。\n\n[0073]需要说明的是，保护胶层可以为黑色胶层也可以是透明胶层。当然保护胶层还可以是其他胶层。可以理解的是，保护胶层可以保护封装层不被刮伤损坏，从而提报微型显示面板的使用寿命。\n\n[0074]307、在所述封装层上设置集成电路模块。\n\n[0075]308、在所述封装层远离所述第二端的一端连接由印刷电路板。\n\n[0076]309、将所述玻璃基板的第一端通过激光部分切除。\n\n[0077]需要说明的是，处理通过激光将玻璃基板部分切除以外，还可以采用其他切除方式，比如，通过水刀进行切割。另外的，玻璃基板切除的部分对应扇出区。\n\n[0078]310、将所述绝缘层、薄膜晶体管层以及微型发光二极管层靠近所述第一端一端的朝向远离第二面的一侧弯折，所述绝缘层靠近所述第一端的端部与所述第一端之间具有空隙。\n\n[0079]由于采用上述方法，在微型显示面板与微型显示面板拼接时，不会挤压绝缘层、薄膜晶体管层以及微型发光二极管层。这样可以防止在弯折过程中损坏绝缘层。同时，这种方式在拼装过程中缝隙较小。\n\n[0080]请参阅图5，图5为本申请实施例提供的拼接显示面板结构示意图。其中，本申请实施例提供一种拼接显示面板100。其中，拼接显示面板100包括多个微型显示面板10，多个所述微型显示面板10紧密拼接，所述微型显示面板10为以上实施例所述的微型显示面板10。由于以上实施例对微型显示面板10已经详细描述。因此，本申请实施例中对微型显示面板10不做过度赘述。\n\n[0081]本申请实施例的拼接显示面板100通过多个微型显示面板10拼接形成，由于微型显示面板10与微型显示面板10拼接时，不会挤压绝缘层12、薄膜晶体管层13以及微型发光二极管层。这样可以防止在弯折过程中损坏绝缘层12。同时，这种方式在拼装过程中缝隙较小。\n\n[0082]以上对本申请实施例提供的一种微型显示面板、制程方法以及拼接显示面板进行了详细介绍。本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及面板制造技术领域，特别涉及一种微型显示面板、制程方法及拼接显示面板。\n\n背景技术\n\n[0002]微型发光二极管(Mini/Micro-Light Emitting Diode,Mini/Micro-LED)显示作为下一代显示技术，优秀的显示效果，色彩还原性强，宽视角，高刷新率，高对比度，高稳定性，低功耗，高灰度等优势，显现出比液晶显示(Liquid Crystal Display,LCD)和有机发光二极管(Organic Light Emitting Diode,OLED)显示更优异的性能。从长远来看，随着转移等关键技术的突破，微型发光二极管或将全面进入从小屏到大屏的各类显示领域。\n\n[0003]现有的顶发光的柔性微型发光二极管拼接技术方案，在该方案中，由于扇出区向玻璃侧弯曲，而切割后的玻璃断面比较粗糙，可能出先尖刺等问题，从而在弯折过程中可能损坏绝缘层。\n\n[0004]因此，提供一种在弯折过程中不容易损坏绝缘层的拼接显示面板成为本领域技术人员亟待解决的技术问题。\n\n发明内容\n\n[0005]本申请实施例提供一种微型显示面板、制程方法及拼接显示面板。可以防止在弯折过程中损坏绝缘层。\n\n[0006]本申请实施例提供一种微型显示面板，包括：\n\n[0007]玻璃基板，所述玻璃基板具有相对设置的第一面和第二面，以及相对设置的第一端和第二端；\n\n[0008]绝缘层，所述绝缘层设置在所述第一面；\n\n[0009]薄膜晶体管层，所述薄膜晶体管层设置在所述绝缘层远离所述玻璃基板的一面；\n\n[0010]微型发光二极管层，所述微型发光二极管层设置在所述薄膜晶体管层远离所述绝缘层的一面；\n\n[0011]其中，所述绝缘层、薄膜晶体管层以及微型发光二极管层靠近所述第一端的一端朝向远离所述第二面的一侧弯折，所述绝缘层靠近所述第一端的端部与所述第一端之间具有空隙。\n\n[0012]在一些实施例中，还包括封装层，所述封装层部分覆盖在所述薄膜晶体管远离所述绝缘层的一面。\n\n[0013]在一些实施例中，所述封装层靠近所述第一端的一端与所述第一端对齐，所述封装层远离所述第一端的一端延伸到所述第二端外侧。\n\n[0014]在一些实施例中，还包括保护胶层，所述保护胶层设在所述封装层远离所述绝缘层的一面。\n\n[0015]在一些实施例中，所述保护胶层靠近所述第一端的一端与所述第一端对齐，所述保护胶层远离所述第一端的一端与所述绝缘层远离所述第二端的一端对齐。\n\n[0016]在一些实施例中，还包括集成电路模块，所述集成电路模块设置在所述封装层上。\n\n[0017]在一些实施例中，还包括印刷电路板，所述印刷电路板与所述封装层远离所述第二端的一端连接。\n\n[0018]本申请实施例提供一种微型显示面板的制程方法，包括：\n\n[0019]提供一玻璃基板，所述玻璃基板具有相对设置的第一面和第二面，以及相对设置的第一端和第二端；\n\n[0020]在所述第一面设置绝缘层；\n\n[0021]在所述绝缘层远离所述玻璃基板的一面设置薄膜晶体管层；\n\n[0022]在所述薄膜晶体管层远离所述绝缘层的一面设置微型发光二极管层；\n\n[0023]将所述绝缘层、薄膜晶体管层以及微型发光二极管层靠近所述第一端一端的朝向远离第二面的一侧弯折，所述绝缘层靠近所述第一端的端部与所述第一端之间具有空隙。\n\n[0024]在一些实施例中，在所述薄膜晶体管层远离所述绝缘层的一面设置微型发光二极管层之后，包括：\n\n[0025]将所述玻璃基板的第一端通过激光部分切除。\n\n[0026]本申请实施例提供一种拼接显示面板，包括多个微型显示面板，多个所述微型显示面板紧密拼接，所述微型显示面板为以上所述的微型显示面板。\n\n[0027]本申请实施例中提供微型显示面板、制程方法及拼接显示面板，本申请实施例中微型显示面板包括玻璃基板、绝缘层、薄膜晶体管层以及微型发光二极管层，所述玻璃基板具有相对设置的第一面和第二面，以及相对设置的第一端和第二端，所述绝缘层设置在所述第一面，所述薄膜晶体管层设置在所述绝缘层远离所述玻璃基板的一面，所述微型发光二极管层设置在所述薄膜晶体管层远离所述绝缘层的一面；其中，所述绝缘层、薄膜晶体管层以及微型发光二极管层靠近所述第一端的一端朝向远离所述第二面的一侧弯折，所述绝缘层靠近所述第一端的端部与所述第一端之间具有空隙。本申请将微型发光二极管层设置在所述薄膜晶体管层远离所述绝缘层的一面，这样可以实现微型显示面板的底发光，由于将绝缘层、薄膜晶体管层以及微型发光二极管层靠近所述第一端的一端朝向远离所述第二面的一侧扇出弯折，所述绝缘层靠近所述第一端的端部与所述第一端之间具有空隙。因此，在微型显示面板与微型显示面板拼接时，不会挤压绝缘层、薄膜晶体管层以及微型发光二极管层。这样可以防止在弯折过程中损坏绝缘层。同时，这种方式在拼装过程中缝隙较小。\n\n附图说明\n\n[0028]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。\n\n[0029]图1为本申请实施例提供的微型显示面板结构示意图。\n\n[0030]图2为本申请实施例提供的微型显示面板制程方法流程示意图。\n\n[0031]图3为本申请实施例提供的另一种微型显示面板制程方法流程示意图。\n\n[0032]图4为本申请实施例提供的另一种微型显示面板制程方法场景示意图。\n\n[0033]图5为本申请实施例提供的拼接显示面板结构示意图。\n\n具体实施方式\n\n[0034]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0035]本申请实施例中提供一种微型显示面板、制程方法及拼接显示面板。以下对本申请实施例的彩微型显示面板做详细介绍。\n\n[0036]请参阅图1，图1为本申请实施例提供的一种微型显示面板结构示意图。其中，本申请实施例中微型显示面板10包括玻璃基板11、绝缘层12、薄膜晶体管层13以及微型发光二极管层14，所述玻璃基板11具有相对设置的第一面11a和第二面11b，以及相对设置的第一端11c和第二端11d，所述绝缘层12设置在所述第一面11a，所述薄膜晶体管层13设置在所述绝缘层12远离所述玻璃基板11的一面，所述微型发光二极管层14设置在所述薄膜晶体管层13远离所述绝缘层12的一面；其中，所述绝缘层12、薄膜晶体管层13以及微型发光二极管层靠近所述第一端11c的一端朝向远离所述第二面11b的一侧弯折，所述绝缘层12靠近所述第一端11c的端部与所述第一端11c之间具有空隙。\n\n[0037]需要说明的是，第一面11a可以为玻璃基板11的上表面，第二面11b可以为玻璃基板11的下表面。当然，第一面11a也可以为玻璃基板11的下表面，第二面11b可以为玻璃基板11的上表面。本申请实施例中不做特殊说明的情况下，默认为第一面11a为玻璃基板11的上表面，第二面11b为玻璃基板11的下表面。第一端11c为玻璃基板11的右侧端部，第二端11d为玻璃基板11的左侧端部。当然，在一些实施例中，可以将第一端11c和第二端11d的方位互换。本申请实施例中不做特殊说明的情况下，默认为第一端11c为玻璃基板11的右侧端部，第二端11d为玻璃基板11的左侧端部。\n\n[0038]另外的，绝缘层12为聚酰亚胺薄膜。当然绝缘层12也可以采用其他材料。本实施例中对绝缘层12采用的材料不过多赘述。\n\n[0039]另外的，薄膜晶体管层13为作为微型显示面板的开关。微型显示面板10上的每个液晶像素点都是由薄膜晶体管来驱动。\n\n[0040]另外的，微型发光二极管层包括多个微型发光二极管，具体的，多个微型发光二极管可以呈阵列排布形成微型发光二极管层。\n\n[0041]另外的，所述绝缘层12靠近所述第一端11c的端部与所述第一端11c之间具有空隙。因为具有该间隙，因此，在微型显示面板10与微型显示面板10拼接的过程中，微型显示面板10中的绝缘层12不会相互摩擦，从而避免绝缘层12断裂。\n\n[0042]其中，微型显示面板10还包括封装层15，所述封装层15部分覆盖在所述薄膜晶体管远离所述绝缘层12的一面。\n\n[0043]需要说明的是，封装层15设在靠近所述第一端11c的一侧，所述封装层15可以通过胶水黏贴在薄膜晶体管层13上。封装层15为覆晶薄膜。封装层15主要用于封装集成电路模块17。\n\n[0044]其中，所述封装层15靠近所述第一端11c的一端与所述第一端11c对齐，所述封装层15远离所述第一端11c的一端延伸到所述第二端11d外侧。\n\n[0045]需要说明的是，封装层15远离所述第一端11c的一端延伸所述第二端11d外侧，可以在封装集成电路模块17以后，方便弯折。\n\n[0046]其中，微型发光二极管层14上设有高反射率封装层141。具体的，高反射率封装层141可以为uv膜。\n\n[0047]其中，微型显示面板10还包括保护胶层16，所述保护胶层16设在所述封装层15远离所述绝缘层12的一面。\n\n[0048]需要说明的是，保护胶层16可以为黑色胶层也可以是透明胶层。当然保护胶层16还可以是其他胶层。可以理解的是，保护胶层16可以保护封装层15不被刮伤损坏，从而提报微型显示面板10的使用寿命。\n\n[0049]其中，所述保护胶层16靠近所述第一端11c的一端与所述第一端11c对齐，所述保护胶层16远离所述第一端11c的一端与所述绝缘层12远离所述第二端11d的一端对齐。\n\n[0050]由于，保护胶层16靠近所述第一端11c的一端与所述第一端11c对齐，所述保护胶层16远离所述第一端11c的一端与所述绝缘层12远离所述第二端11d的一端对齐。这样恰好保护弯折部分的封装层15。这样在既达到保护目的情况下，也不会浪费材料。\n\n[0051]其中，微型显示面板10还包括集成电路模块17，所述集成电路模块17设置在所述封装层15上。\n\n[0052]其中，微型显示面板10还包括印刷电路板18，所述印刷电路板18与所述封装层15远离所述第二端11d的一端连接。\n\n[0053]本申请实施例中微型显示面板10包括玻璃基板11、绝缘层12、薄膜晶体管层13以及微型发光二极管层，所述玻璃基板11具有相对设置的第一面11a和第二面11b，以及相对设置的第一端11c和第二端11d，所述绝缘层12设置在所述第一面11a，所述薄膜晶体管层13设置在所述绝缘层12远离所述玻璃基板11的一面，所述微型发光二极管层14设置在所述薄膜晶体管层13远离所述绝缘层12的一面；其中，所述绝缘层12、薄膜晶体管层13以及微型发光二极管层靠近所述第一端11c的一端朝向远离所述第二面11b的一侧弯折，所述绝缘层12靠近所述第一端11c的端部与所述第一端11c之间具有空隙。本申请将微型发光二极管层14设置在所述薄膜晶体管层13远离所述绝缘层12的一面，这样可以实现微型显示面板10的底发光，由于绝缘层12、薄膜晶体管层13以及微型发光二极管层靠近所述第一端11c的一端朝向远离所述第二面11b的一侧扇出区弯折，所述绝缘层12靠近所述第一端11c的端部与所述第一端11c之间具有空隙。因此，在微型显示面板10与微型显示面板10拼接时，不会挤压绝缘层12、薄膜晶体管层13以及微型发光二极管层。这样可以防止在弯折过程中损坏绝缘层12。同时，这种方式在拼装过程中缝隙较小。\n\n[0054]请参阅图2，图2为本申请实施例提供的一种微型显示面板制程方法流程示意图。其中，本申请实施例提供微型显示面板的制程方法，包括步骤：\n\n[0055]201、提供一玻璃基板，所述玻璃基板具有相对设置的第一面和第二面，以及相对设置的第一端和第二端。\n\n[0056]需要说明的是，第一面可以为玻璃基板的上表面，第二面可以为玻璃基板的下表面。当然，第一面也可以为玻璃基板的下表面，第二面可以为玻璃基板的上表面。本申请实施例中不做特殊说明的情况下，默认为第一面为玻璃基板的上表面，第二面为玻璃基板的下表面。第一端为玻璃基板的左侧端部，第二端为玻璃基板的右侧端部。当然，在一些实施例中，可以将第一端和第二端的方位互换。本申请实施例中不做特殊说明的情况下，默认为第一端为玻璃基板的左侧端部，第二端为玻璃基板的右侧端部。\n\n[0057]202、在所述第一面设置绝缘层。\n\n[0058]需要说明的是，绝缘层为聚酰亚胺薄膜。当然绝缘层也可以采用其他材料。本实施例中对绝缘层采用的材料不过多赘述。\n\n[0059]203、在所述绝缘层远离所述玻璃基板的一面设置薄膜晶体管层。\n\n[0060]需要说明的是，薄膜晶体管层为作为微型显示面板的开关。微型显示面板上的每个液晶像素点都是由薄膜晶体管来驱动。\n\n[0061]204、在所述薄膜晶体管层远离所述绝缘层的一面设置微型发光二极管层。\n\n[0062]需要说明的是，微型发光二极管层包括多个微型发光二极管，具体的，多个微型发光二极管可以呈阵列排布形成微型发光二极管层。\n\n[0063]205、将所述绝缘层、薄膜晶体管层以及微型发光二极管层靠近所述第一端一端的朝向远离第二面的一侧弯折，所述绝缘层靠近所述第一端的端部与所述第一端之间具有空隙。\n\n[0064]由于采用上述方法，在微型显示面板与微型显示面板拼接时，不会挤压绝缘层、薄膜晶体管层以及微型发光二极管层。这样可以防止在弯折过程中损坏绝缘层。同时，这种方式在拼装过程中缝隙较小。\n\n[0065]请参阅图3和图4，图3为本申请实施例提供的另一种微型显示面板制程方法流程示意图。图4为本申请实施例提供的另一种微型显示面板制程方法场景示意图。\n\n[0066]其中，本申请实施例提供微型显示面板的制程方法，包括步骤：\n\n[0067]301、提供一玻璃基板，所述玻璃基板具有相对设置的第一面和第二面，以及相对设置的第一端和第二端。\n\n[0068]302、在所述第一面设置绝缘层。\n\n[0069]303、在所述绝缘层远离所述玻璃基板的一面设置薄膜晶体管层。\n\n[0070]304、在所述薄膜晶体管层远离所述绝缘层的一面设置微型发光二极管层。\n\n[0071]305、在所述薄膜晶体管远离所述绝缘层的一面部分覆盖有封装层。\n\n[0072]306、在所述封装层远离所述绝缘层的一面设置有保护胶层。\n\n[0073]需要说明的是，保护胶层可以为黑色胶层也可以是透明胶层。当然保护胶层还可以是其他胶层。可以理解的是，保护胶层可以保护封装层不被刮伤损坏，从而提报微型显示面板的使用寿命。\n\n[0074]307、在所述封装层上设置集成电路模块。\n\n[0075]308、在所述封装层远离所述第二端的一端连接由印刷电路板。\n\n[0076]309、将所述玻璃基板的第一端通过激光部分切除。\n\n[0077]需要说明的是，处理通过激光将玻璃基板部分切除以外，还可以采用其他切除方式，比如，通过水刀进行切割。另外的，玻璃基板切除的部分对应扇出区。\n\n[0078]310、将所述绝缘层、薄膜晶体管层以及微型发光二极管层靠近所述第一端一端的朝向远离第二面的一侧弯折，所述绝缘层靠近所述第一端的端部与所述第一端之间具有空隙。\n\n[0079]由于采用上述方法，在微型显示面板与微型显示面板拼接时，不会挤压绝缘层、薄膜晶体管层以及微型发光二极管层。这样可以防止在弯折过程中损坏绝缘层。同时，这种方式在拼装过程中缝隙较小。\n\n[0080]请参阅图5，图5为本申请实施例提供的拼接显示面板结构示意图。其中，本申请实施例提供一种拼接显示面板100。其中，拼接显示面板100包括多个微型显示面板10，多个所述微型显示面板10紧密拼接，所述微型显示面板10为以上实施例所述的微型显示面板10。由于以上实施例对微型显示面板10已经详细描述。因此，本申请实施例中对微型显示面板10不做过度赘述。\n\n[0081]本申请实施例的拼接显示面板100通过多个微型显示面板10拼接形成，由于微型显示面板10与微型显示面板10拼接时，不会挤压绝缘层12、薄膜晶体管层13以及微型发光二极管层。这样可以防止在弯折过程中损坏绝缘层12。同时，这种方式在拼装过程中缝隙较小。\n\n[0082]以上对本申请实施例提供的一种微型显示面板、制程方法以及拼接显示面板进行了详细介绍。本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10781, 23835, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及自发光显示技术领域，具体涉及一种像素电路和显示面板。\n\n背景技术\n\n[0002]与传统的电压驱动型LCD(Liquid Crystal Display，液晶显示器)相比，电流驱动型显示器对驱动TFT(Thin Film Transistor，薄膜晶体管)的电性变异比较敏感，其阈值电压(Vth)的均匀性和在应力(Stress)下Vth的漂移均会影响画面显示的准确性和均匀性。为解决Vth的偏移问题，业界引入补偿电路设计。其中，大尺寸面板采用外部补偿方案，成本比较高；而中小尺寸的LTPS(Low Temperature Poly-Silicon，低温多晶硅)面板一般采用如6T1C或者7T1C这样的内部补偿电路。\n\n[0003]但是，这些内部补偿电路仅能够补偿阈值电压的单向漂移，无法补偿阈值电压的正负漂移，严重影响了画面显示的均匀性。\n\n发明内容\n\n[0004]本申请提供一种像素电路，解决的内部补偿电路仅能够补偿阈值电压单向漂移的问题。\n\n[0005]第一方面，本申请提供一种像素电路，其包括发光器件、驱动单元、写入单元、存储单元以及补偿单元；发光器件，与第一电源信号连接，用于像素显示；驱动单元，与发光器件连接，用于控制流经发光器件的电流强度；写入单元，与驱动单元连接，用于根据前帧的扫描信号写入数据信号；存储单元，与写入单元、驱动单元以及第二电源信号连接，用于存储和维持驱动单元的阈值电压；以及补偿单元，与驱动单元连接，用于根据探测信号动态线性调节阈值电压，以配置参考信号补偿阈值电压的正负漂移。\n\n[0006]基于第一方面，在第一方面的第一种实施方式中，像素电路还包括：预存单元，与写入单元和驱动单元连接，用于根据扫描信号预存数据信号，以延长对应像素的充电时间。\n\n[0007]基于第一方面的第一种实施方式，在第一方面的第二种实施方式中，驱动单元包括被配置为N型双栅的第一薄膜晶体管；第一薄膜晶体管的漏极与发光器件的输出端和补偿单元连接；第一薄膜晶体管的源极与第二电源信号和存储单元连接；第一薄膜晶体管的顶栅与补偿单元、写入单元以及存储单元连接；第一薄膜晶体管的底栅与补偿单元连接。\n\n[0008]基于第一方面的第二种实施方式，在第一方面的第三种实施方式中，写入单元包括第二薄膜晶体管；第二薄膜晶体管的漏极与数据信号连接；第二薄膜晶体管的栅极与扫描信号连接；第二薄膜晶体管的源极与第一薄膜晶体管的顶栅连接。\n\n[0009]基于第一方面的第三种实施方式，在第一方面的第四种实施方式中，存储单元包括第一电容；第一电容的第一端与第一薄膜晶体管的顶栅和第二薄膜晶体管的源极连接；第一电容的第二端与第一薄膜晶体管的源极和第二电源信号连接。\n\n[0010]基于第一方面的第四种实施方式，在第一方面的第五种实施方式中，补偿单元包括第三薄膜晶体管、第四薄膜晶体管以及第二电容；探测信号与第三薄膜晶体管的栅极和第四薄膜晶体管的栅极连接；参考信号与第三薄膜晶体管的漏极连接；第三薄膜晶体管的源极与第一薄膜晶体管的顶栅、第二薄膜晶体管的源极以及第一电容的第一端连接；第四薄膜晶体管的漏极与第一薄膜晶体管的漏极和发光器件的输出端连接；第四薄膜晶体管的源极与第一薄膜晶体管的底栅和第二电容的第一端连接；第二电容的第二端与零电位连接。\n\n[0011]基于第一方面的第五种实施方式，在第一方面的第六种实施方式中，预存单元包括第五薄膜晶体管和第三电容；第二薄膜晶体管的源极与第三电容的第一端和第五薄膜晶体管的漏极连接；第三电容的第二端与零电位连接；第五薄膜晶体管的栅极与并入信号连接；第五薄膜晶体管的源极与第一薄膜晶体管的顶栅连接。\n\n[0012]基于第一方面的上述任一种实施方式，在第一方面的第七种实施方式中，第一电源信号、第二电源信号均为可变电源信号。\n\n[0013]基于第一方面的上述任一种实施方式，在第一方面的第八种实施方式中，发光器件为有机发光二极管、微发光二极管以及次毫米发光二极管中的至少任一种。\n\n[0014]第二方面，本申请提供一种显示面板，其包括上述任一实施方式中的像素电路。\n\n[0015]本申请提供的像素电路，通过补偿单元能够动态线性调节驱动单元的阈值电压，且参考信号可以补偿阈值电压的正负漂移，解决了内部补偿电路仅能够补偿阈值电压单向漂移的问题。\n\n附图说明\n\n[0016]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0017]图1a为二极管连接方式内部补偿电路的电路示意图。\n\n[0018]图1b为图1a所示的阈值电压大于零时栅极-源极电压差随时间变化的示意图。\n\n[0019]图1c为图1a所示的阈值电压小于零时栅极-源极电压差随时间变化的示意图。\n\n[0020]图2为本申请实施例提供的像素电路的一种结构示意图。\n\n[0021]图3为图2所示的像素电路的工作时序示意图。\n\n[0022]图4为本申请实施例提供的像素电路的另一种结构示意图。\n\n[0023]图5为图4所示的像素电路的工作时序示意图。\n\n具体实施方式\n\n[0024]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0025]为了更好地理解本申请的发明目的，现说明图1a所示的经典Diode-Connect(二极管连接)型内部补偿电路结构，其中，控制管NT2连接驱动管NT1的Gate(栅极)和Drain(漏极)，当控制管NT2的Gate(栅极)给高电位时，驱动管NT1形成二极管结构。如图1b所示，若驱动管NT1的阈值电压Vth>0V时，其Gate端电压会通过二极管结构进行释放，直至驱动管NT1的栅极-源极电压差Vgs与其阈值电压Vth相等时，二极管结构的导通状态截止，然后探测到驱动管NT1的阈值电压Vth，再进行后续的阈值电压Vth补偿；若Vth图1c所示，驱动管NT1的Gate端和Source(源极)端电位相等，即驱动管NT1的栅极-源极电压差Vgs＝0V时，在其Gate端不能全部探测到阈值电压Vth，因此，驱动管NT1作为N型薄膜晶体管时，Diode-Connect型补偿电路无法补偿阈值电压Vth[0026]基于此，如图2所示，本实施例提供了一种像素电路，其包括发光器件50、驱动单元10、写入单元20、存储单元30以及补偿单元40；第一电源信号EVDD与发光器件50的输入端连接，发光器件50用于像素显示；发光器件50的输出端与驱动单元10连接，驱动单元10用于控制流经发光器件50的电流强度；驱动单元10的输出端与第二电源信号VSS连接；写入单元20的输出端与驱动单元10的第一控制端、存储单元30的输入端连接，写入单元20用于根据前帧的扫描信号SCAN控制数据信号DATA写入至存储单元30，存储单元30用于存储和维持驱动单元10的阈值电压，存储单元30的输出端与驱动单元10的输出端连接；补偿单元40与驱动单元10的输入端、第一控制端以及第二控制端连接，补偿单元40可以根据探测信号SENSE控制第二控制端电位，以实现动态线性调节阈值电压，并且可以通过配置参考信号VREF来补偿阈值电压的正负漂移，即正向漂移和负向漂移。\n\n[0027]因此，本实施例提供的像素电路，解决了Diode-Connect型补偿电路无法补偿阈值电压为负的情况，可以实现正向漂移和负向漂移的全面补偿，补偿范围宽，且提高了显示的均匀性。\n\n[0028]需要进行说明的是，扫描信号SCAN可以但不限于通过GOA电路提供，也可以通过栅驱动集成电路来提供，并且本实施例中仅用了一条扫描线，可以减少面板内的布线数量，降低设计的复杂度；探测信号SENSE可以但不限于为外部集成电路提供；其中，可以理解的是第一电源信号EVDD、第二电源信号VSS均为可变电源信号，并非恒压电源信号，可以满足不同工作阶段的需求。\n\n[0029]需要进行说明的是，发光器件50可以但不限于为有机发光二极管、微发光二极管以及次毫米发光二极管等电流自发光型器件中的至少任一种。\n\n[0030]如图4所示，在其中一个实施例中，像素电路还包括预存单元60，其中，预存单元60与写入单元20和驱动单元10连接，用于根据扫描信号SCAN预存数据信号DATA，且根据并入信号MERGE的控制将预存的数据信号DATA来进一步维持第一控制端的电位，进而可以延长对应像素的充电时间。\n\n[0031]如图2所示，在其中一个实施例中，驱动单元10包括被配置为N型双栅的第一薄膜晶体管T1；第一薄膜晶体管T1的漏极与发光器件50的输出端和补偿单元40连接；第一薄膜晶体管T1的源极与第二电源信号VSS和存储单元30连接；第一薄膜晶体管T1的顶栅与补偿单元40、写入单元20以及存储单元30连接；第一薄膜晶体管T1的底栅与补偿单元40连接。\n\n[0032]需要进行说明的是，第一薄膜晶体管T1为N型双栅薄膜晶体管；当第一薄膜晶体管T1的底栅电位为负电位时，第一薄膜晶体管T1的阈值电压为正；当第一薄膜晶体管T1的底栅电位为正电位时，第一薄膜晶体管T1的阈值电压为负。\n\n[0033]如图2所示，在其中一个实施例中，写入单元20包括第二薄膜晶体管T2；第二薄膜晶体管T2的漏极与数据信号DATA连接；第二薄膜晶体管T2的栅极与扫描信号SCAN连接；第二薄膜晶体管T2的源极与第一薄膜晶体管T1的顶栅连接。\n\n[0034]如图2所示，在其中一个实施例中，存储单元30包括第一电容C1；第一电容C1的第一端与第一薄膜晶体管T1的顶栅和第二薄膜晶体管T2的源极连接；第一电容C1的第二端与第一薄膜晶体管T1的源极和第二电源信号VSS连接。\n\n[0035]如图2所示，在其中一个实施例中，补偿单元40包括第三薄膜晶体管T3、第四薄膜晶体管T4以及第二电容C2；探测信号SENSE与第三薄膜晶体管T3的栅极和第四薄膜晶体管T4的栅极连接；参考信号VREF与第三薄膜晶体管T3的漏极连接；第三薄膜晶体管T3的源极与第一薄膜晶体管T1的顶栅、第二薄膜晶体管T2的源极以及第一电容C1的第一端连接；第四薄膜晶体管T4的漏极与第一薄膜晶体管T1的漏极和发光器件50的输出端连接；第四薄膜晶体管T4的源极与第一薄膜晶体管T1的底栅和第二电容C2的第一端连接；第二电容C2的第二端与零电位连接。\n\n[0036]如图4所示，在其中一个实施例中，预存单元60包括第五薄膜晶体管T5和第三电容C3；第二薄膜晶体管T2的源极与第三电容C3的第一端和第五薄膜晶体管T5的漏极连接；第三电容C3的第二端与零电位连接；第五薄膜晶体管T5的栅极与并入信号MERGE连接；第五薄膜晶体管T5的源极与第一薄膜晶体管T1的顶栅连接。\n\n[0037]需要进行说明的是，本实施例提供的像素电路，当第四薄膜晶体管T4打开时，第一薄膜晶体管T1形成二极管。其中，第二电容C2用于存储第一薄膜晶体管T1的底栅电位，即存储阈值电压；第三电容C3用于在前帧预存储数据信号DATA；第一电容C1用于第一薄膜晶体管T1的栅极-源极电位差Vgs，以在发光时维持第一薄膜晶体管T1的栅极-源极电位差Vgs。\n\n[0038]如图3所示，本实施例提供的像素电路的工作时序包括以下几个阶段：\n\n[0039]初始化阶段INI：第一电源信号EVDD为低电位，第二电源信号VSS为高电位，发光器件50不发光，探测信号SENSE为高电位，第三薄膜晶体管T3、第四薄膜晶体管T4均打开，参考信号VREF为正电位，第一薄膜晶体管T1打开，第二电源信号VSS依次通过第一薄膜晶体管T1、第四薄膜晶体管T4将第二电容C2充电至高电位，即此时第一薄膜晶体管T1的底栅电位为高电位。\n\n[0040]补偿阶段COM：第一电源信号EVDD为低电位，第二电源信号VSS为低电位，发光器件50不发光，探测信号SENSE为高电位，参考信号VREF变为负电位，第三薄膜晶体管T3、第四薄膜晶体管T4均打开，由于第一薄膜晶体管T1的阈值电压被调制为负值，而参考信号VREF的电位仍高于第一薄膜晶体管T1的阈值电压，此时第一薄膜晶体管T1打开，形成二极管连接状态；第一薄膜晶体管T1的底栅电位依次通过第四薄膜晶体管T4、第一薄膜晶体管T1连接至第二电源信号VSS进行放电，第一薄膜晶体管T1的底栅电位不断下降，第一薄膜晶体管T1的的阈值电压逐渐增大，直到第一薄膜晶体管T1的阈值电压增大到与参考信号VREF的电位相等，此时第一薄膜晶体管T1截止，探测信号SENSE变为低电位，补偿结束，第四薄膜晶体管T4关闭，第二电容C2存储相应第一薄膜晶体管T1的底栅电位。\n\n[0041]写入阶段WR：前帧的扫描信号SCAN逐行打开，并将数据信号DATA写入到第一电容C1；如图5所示，并入信号MERGE为高电位，第五薄膜晶体管T5打开，数据信号DATA同时预存在第三电容C3上；\n\n[0042]发光阶段EM：第一电源信号EVDD变为高，发光器件50开始发光；也可以选择并入信号MERGE为高电位，打开第五薄膜晶体管T5，第三电容C3可以进一步延长第一薄膜晶体管T1的顶栅电位，以维持第一薄膜晶体管T1的导通状态；流经发光器件50的电流公式为：\n\n[0043]\n\n[0044]其中，α为数据信号DATA至第一薄膜晶体管T1的顶栅的传输效率。\n\n[0045]需要进行说明的是，本实施例提供的像素电路，其中，第二薄膜晶体管T2、第三薄膜晶体管T3、第四薄膜晶体管T4以及第五薄膜晶体管T5可以但不限于为单栅极薄膜晶体管；也可以为双栅极薄膜晶体管，采用双栅极薄膜晶体管时，将对应的双栅极薄膜晶体管的顶栅和底栅连接即可。\n\n[0046]需要进行说明的是，本实施例提供的像素电路，可以通过调节扫描信号SCAN的高电位周期，来调节该像素电路的发光周期；具体的，写入阶段WR和发光阶段EM组成一个周期的话，发光阶段EM可以但不限于占一个周期的71％，写入阶段WR占一个周期的剩余部分。\n\n[0047]需要进行说明的是，本实施例提供的像素电路，在发光阶段EM，可以通过扫描信号SCAN控制数据信号DATA的写入，提高了像素电路的工作效率。\n\n[0048]在其中一个实施例中，本申请提供一种显示面板，其包括上述任一实施例中的像素电路。\n\n[0049]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0050]以上对本申请实施例所提供的像素电路进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及自发光显示技术领域，具体涉及一种像素电路和显示面板。\n\n背景技术\n\n[0002]与传统的电压驱动型LCD(Liquid Crystal Display，液晶显示器)相比，电流驱动型显示器对驱动TFT(Thin Film Transistor，薄膜晶体管)的电性变异比较敏感，其阈值电压(Vth)的均匀性和在应力(Stress)下Vth的漂移均会影响画面显示的准确性和均匀性。为解决Vth的偏移问题，业界引入补偿电路设计。其中，大尺寸面板采用外部补偿方案，成本比较高；而中小尺寸的LTPS(Low Temperature Poly-Silicon，低温多晶硅)面板一般采用如6T1C或者7T1C这样的内部补偿电路。\n\n[0003]但是，这些内部补偿电路仅能够补偿阈值电压的单向漂移，无法补偿阈值电压的正负漂移，严重影响了画面显示的均匀性。\n\n发明内容\n\n[0004]本申请提供一种像素电路，解决的内部补偿电路仅能够补偿阈值电压单向漂移的问题。\n\n[0005]第一方面，本申请提供一种像素电路，其包括发光器件、驱动单元、写入单元、存储单元以及补偿单元；发光器件，与第一电源信号连接，用于像素显示；驱动单元，与发光器件连接，用于控制流经发光器件的电流强度；写入单元，与驱动单元连接，用于根据前帧的扫描信号写入数据信号；存储单元，与写入单元、驱动单元以及第二电源信号连接，用于存储和维持驱动单元的阈值电压；以及补偿单元，与驱动单元连接，用于根据探测信号动态线性调节阈值电压，以配置参考信号补偿阈值电压的正负漂移。\n\n[0006]基于第一方面，在第一方面的第一种实施方式中，像素电路还包括：预存单元，与写入单元和驱动单元连接，用于根据扫描信号预存数据信号，以延长对应像素的充电时间。\n\n[0007]基于第一方面的第一种实施方式，在第一方面的第二种实施方式中，驱动单元包括被配置为N型双栅的第一薄膜晶体管；第一薄膜晶体管的漏极与发光器件的输出端和补偿单元连接；第一薄膜晶体管的源极与第二电源信号和存储单元连接；第一薄膜晶体管的顶栅与补偿单元、写入单元以及存储单元连接；第一薄膜晶体管的底栅与补偿单元连接。\n\n[0008]基于第一方面的第二种实施方式，在第一方面的第三种实施方式中，写入单元包括第二薄膜晶体管；第二薄膜晶体管的漏极与数据信号连接；第二薄膜晶体管的栅极与扫描信号连接；第二薄膜晶体管的源极与第一薄膜晶体管的顶栅连接。\n\n[0009]基于第一方面的第三种实施方式，在第一方面的第四种实施方式中，存储单元包括第一电容；第一电容的第一端与第一薄膜晶体管的顶栅和第二薄膜晶体管的源极连接；第一电容的第二端与第一薄膜晶体管的源极和第二电源信号连接。\n\n[0010]基于第一方面的第四种实施方式，在第一方面的第五种实施方式中，补偿单元包括第三薄膜晶体管、第四薄膜晶体管以及第二电容；探测信号与第三薄膜晶体管的栅极和第四薄膜晶体管的栅极连接；参考信号与第三薄膜晶体管的漏极连接；第三薄膜晶体管的源极与第一薄膜晶体管的顶栅、第二薄膜晶体管的源极以及第一电容的第一端连接；第四薄膜晶体管的漏极与第一薄膜晶体管的漏极和发光器件的输出端连接；第四薄膜晶体管的源极与第一薄膜晶体管的底栅和第二电容的第一端连接；第二电容的第二端与零电位连接。\n\n[0011]基于第一方面的第五种实施方式，在第一方面的第六种实施方式中，预存单元包括第五薄膜晶体管和第三电容；第二薄膜晶体管的源极与第三电容的第一端和第五薄膜晶体管的漏极连接；第三电容的第二端与零电位连接；第五薄膜晶体管的栅极与并入信号连接；第五薄膜晶体管的源极与第一薄膜晶体管的顶栅连接。\n\n[0012]基于第一方面的上述任一种实施方式，在第一方面的第七种实施方式中，第一电源信号、第二电源信号均为可变电源信号。\n\n[0013]基于第一方面的上述任一种实施方式，在第一方面的第八种实施方式中，发光器件为有机发光二极管、微发光二极管以及次毫米发光二极管中的至少任一种。\n\n[0014]第二方面，本申请提供一种显示面板，其包括上述任一实施方式中的像素电路。\n\n[0015]本申请提供的像素电路，通过补偿单元能够动态线性调节驱动单元的阈值电压，且参考信号可以补偿阈值电压的正负漂移，解决了内部补偿电路仅能够补偿阈值电压单向漂移的问题。\n\n附图说明\n\n[0016]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0017]图1a为二极管连接方式内部补偿电路的电路示意图。\n\n[0018]图1b为图1a所示的阈值电压大于零时栅极-源极电压差随时间变化的示意图。\n\n[0019]图1c为图1a所示的阈值电压小于零时栅极-源极电压差随时间变化的示意图。\n\n[0020]图2为本申请实施例提供的像素电路的一种结构示意图。\n\n[0021]图3为图2所示的像素电路的工作时序示意图。\n\n[0022]图4为本申请实施例提供的像素电路的另一种结构示意图。\n\n[0023]图5为图4所示的像素电路的工作时序示意图。\n\n具体实施方式\n\n[0024]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0025]为了更好地理解本申请的发明目的，现说明图1a所示的经典Diode-Connect(二极管连接)型内部补偿电路结构，其中，控制管NT2连接驱动管NT1的Gate(栅极)和Drain(漏极)，当控制管NT2的Gate(栅极)给高电位时，驱动管NT1形成二极管结构。如图1b所示，若驱动管NT1的阈值电压Vth>0V时，其Gate端电压会通过二极管结构进行释放，直至驱动管NT1的栅极-源极电压差Vgs与其阈值电压Vth相等时，二极管结构的导通状态截止，然后探测到驱动管NT1的阈值电压Vth，再进行后续的阈值电压Vth补偿；若Vth图1c所示，驱动管NT1的Gate端和Source(源极)端电位相等，即驱动管NT1的栅极-源极电压差Vgs＝0V时，在其Gate端不能全部探测到阈值电压Vth，因此，驱动管NT1作为N型薄膜晶体管时，Diode-Connect型补偿电路无法补偿阈值电压Vth[0026]基于此，如图2所示，本实施例提供了一种像素电路，其包括发光器件50、驱动单元10、写入单元20、存储单元30以及补偿单元40；第一电源信号EVDD与发光器件50的输入端连接，发光器件50用于像素显示；发光器件50的输出端与驱动单元10连接，驱动单元10用于控制流经发光器件50的电流强度；驱动单元10的输出端与第二电源信号VSS连接；写入单元20的输出端与驱动单元10的第一控制端、存储单元30的输入端连接，写入单元20用于根据前帧的扫描信号SCAN控制数据信号DATA写入至存储单元30，存储单元30用于存储和维持驱动单元10的阈值电压，存储单元30的输出端与驱动单元10的输出端连接；补偿单元40与驱动单元10的输入端、第一控制端以及第二控制端连接，补偿单元40可以根据探测信号SENSE控制第二控制端电位，以实现动态线性调节阈值电压，并且可以通过配置参考信号VREF来补偿阈值电压的正负漂移，即正向漂移和负向漂移。\n\n[0027]因此，本实施例提供的像素电路，解决了Diode-Connect型补偿电路无法补偿阈值电压为负的情况，可以实现正向漂移和负向漂移的全面补偿，补偿范围宽，且提高了显示的均匀性。\n\n[0028]需要进行说明的是，扫描信号SCAN可以但不限于通过GOA电路提供，也可以通过栅驱动集成电路来提供，并且本实施例中仅用了一条扫描线，可以减少面板内的布线数量，降低设计的复杂度；探测信号SENSE可以但不限于为外部集成电路提供；其中，可以理解的是第一电源信号EVDD、第二电源信号VSS均为可变电源信号，并非恒压电源信号，可以满足不同工作阶段的需求。\n\n[0029]需要进行说明的是，发光器件50可以但不限于为有机发光二极管、微发光二极管以及次毫米发光二极管等电流自发光型器件中的至少任一种。\n\n[0030]如图4所示，在其中一个实施例中，像素电路还包括预存单元60，其中，预存单元60与写入单元20和驱动单元10连接，用于根据扫描信号SCAN预存数据信号DATA，且根据并入信号MERGE的控制将预存的数据信号DATA来进一步维持第一控制端的电位，进而可以延长对应像素的充电时间。\n\n[0031]如图2所示，在其中一个实施例中，驱动单元10包括被配置为N型双栅的第一薄膜晶体管T1；第一薄膜晶体管T1的漏极与发光器件50的输出端和补偿单元40连接；第一薄膜晶体管T1的源极与第二电源信号VSS和存储单元30连接；第一薄膜晶体管T1的顶栅与补偿单元40、写入单元20以及存储单元30连接；第一薄膜晶体管T1的底栅与补偿单元40连接。\n\n[0032]需要进行说明的是，第一薄膜晶体管T1为N型双栅薄膜晶体管；当第一薄膜晶体管T1的底栅电位为负电位时，第一薄膜晶体管T1的阈值电压为正；当第一薄膜晶体管T1的底栅电位为正电位时，第一薄膜晶体管T1的阈值电压为负。\n\n[0033]如图2所示，在其中一个实施例中，写入单元20包括第二薄膜晶体管T2；第二薄膜晶体管T2的漏极与数据信号DATA连接；第二薄膜晶体管T2的栅极与扫描信号SCAN连接；第二薄膜晶体管T2的源极与第一薄膜晶体管T1的顶栅连接。\n\n[0034]如图2所示，在其中一个实施例中，存储单元30包括第一电容C1；第一电容C1的第一端与第一薄膜晶体管T1的顶栅和第二薄膜晶体管T2的源极连接；第一电容C1的第二端与第一薄膜晶体管T1的源极和第二电源信号VSS连接。\n\n[0035]如图2所示，在其中一个实施例中，补偿单元40包括第三薄膜晶体管T3、第四薄膜晶体管T4以及第二电容C2；探测信号SENSE与第三薄膜晶体管T3的栅极和第四薄膜晶体管T4的栅极连接；参考信号VREF与第三薄膜晶体管T3的漏极连接；第三薄膜晶体管T3的源极与第一薄膜晶体管T1的顶栅、第二薄膜晶体管T2的源极以及第一电容C1的第一端连接；第四薄膜晶体管T4的漏极与第一薄膜晶体管T1的漏极和发光器件50的输出端连接；第四薄膜晶体管T4的源极与第一薄膜晶体管T1的底栅和第二电容C2的第一端连接；第二电容C2的第二端与零电位连接。\n\n[0036]如图4所示，在其中一个实施例中，预存单元60包括第五薄膜晶体管T5和第三电容C3；第二薄膜晶体管T2的源极与第三电容C3的第一端和第五薄膜晶体管T5的漏极连接；第三电容C3的第二端与零电位连接；第五薄膜晶体管T5的栅极与并入信号MERGE连接；第五薄膜晶体管T5的源极与第一薄膜晶体管T1的顶栅连接。\n\n[0037]需要进行说明的是，本实施例提供的像素电路，当第四薄膜晶体管T4打开时，第一薄膜晶体管T1形成二极管。其中，第二电容C2用于存储第一薄膜晶体管T1的底栅电位，即存储阈值电压；第三电容C3用于在前帧预存储数据信号DATA；第一电容C1用于第一薄膜晶体管T1的栅极-源极电位差Vgs，以在发光时维持第一薄膜晶体管T1的栅极-源极电位差Vgs。\n\n[0038]如图3所示，本实施例提供的像素电路的工作时序包括以下几个阶段：\n\n[0039]初始化阶段INI：第一电源信号EVDD为低电位，第二电源信号VSS为高电位，发光器件50不发光，探测信号SENSE为高电位，第三薄膜晶体管T3、第四薄膜晶体管T4均打开，参考信号VREF为正电位，第一薄膜晶体管T1打开，第二电源信号VSS依次通过第一薄膜晶体管T1、第四薄膜晶体管T4将第二电容C2充电至高电位，即此时第一薄膜晶体管T1的底栅电位为高电位。\n\n[0040]补偿阶段COM：第一电源信号EVDD为低电位，第二电源信号VSS为低电位，发光器件50不发光，探测信号SENSE为高电位，参考信号VREF变为负电位，第三薄膜晶体管T3、第四薄膜晶体管T4均打开，由于第一薄膜晶体管T1的阈值电压被调制为负值，而参考信号VREF的电位仍高于第一薄膜晶体管T1的阈值电压，此时第一薄膜晶体管T1打开，形成二极管连接状态；第一薄膜晶体管T1的底栅电位依次通过第四薄膜晶体管T4、第一薄膜晶体管T1连接至第二电源信号VSS进行放电，第一薄膜晶体管T1的底栅电位不断下降，第一薄膜晶体管T1的的阈值电压逐渐增大，直到第一薄膜晶体管T1的阈值电压增大到与参考信号VREF的电位相等，此时第一薄膜晶体管T1截止，探测信号SENSE变为低电位，补偿结束，第四薄膜晶体管T4关闭，第二电容C2存储相应第一薄膜晶体管T1的底栅电位。\n\n[0041]写入阶段WR：前帧的扫描信号SCAN逐行打开，并将数据信号DATA写入到第一电容C1；如图5所示，并入信号MERGE为高电位，第五薄膜晶体管T5打开，数据信号DATA同时预存在第三电容C3上；\n\n[0042]发光阶段EM：第一电源信号EVDD变为高，发光器件50开始发光；也可以选择并入信号MERGE为高电位，打开第五薄膜晶体管T5，第三电容C3可以进一步延长第一薄膜晶体管T1的顶栅电位，以维持第一薄膜晶体管T1的导通状态；流经发光器件50的电流公式为：\n\n[0043]\n\n[0044]其中，α为数据信号DATA至第一薄膜晶体管T1的顶栅的传输效率。\n\n[0045]需要进行说明的是，本实施例提供的像素电路，其中，第二薄膜晶体管T2、第三薄膜晶体管T3、第四薄膜晶体管T4以及第五薄膜晶体管T5可以但不限于为单栅极薄膜晶体管；也可以为双栅极薄膜晶体管，采用双栅极薄膜晶体管时，将对应的双栅极薄膜晶体管的顶栅和底栅连接即可。\n\n[0046]需要进行说明的是，本实施例提供的像素电路，可以通过调节扫描信号SCAN的高电位周期，来调节该像素电路的发光周期；具体的，写入阶段WR和发光阶段EM组成一个周期的话，发光阶段EM可以但不限于占一个周期的71％，写入阶段WR占一个周期的剩余部分。\n\n[0047]需要进行说明的是，本实施例提供的像素电路，在发光阶段EM，可以通过扫描信号SCAN控制数据信号DATA的写入，提高了像素电路的工作效率。\n\n[0048]在其中一个实施例中，本申请提供一种显示面板，其包括上述任一实施例中的像素电路。\n\n[0049]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0050]以上对本申请实施例所提供的像素电路进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10782, 23836, '技术领域\n\n[0001]本申请涉及显示领域，特别是涉及一种柔性显示面板的制作方法。\n\n背景技术\n\n[0002]有机电致发光(Organic Light Emitting Display，OLED)显示面板由于具有柔性可弯折、便于携带、高对比度以及反应时间短等优势，正在逐步替代液晶显示面板(LCD)，成为具备革命性的下一代显示产品，但是，OLED显示面板由于其价格高以及寿命相对较短等原因，限制了其发展普及，OLED显示面板生产过程中的良率较低问题一直成为限制其价格下降的重要因素。\n\n[0003]现有技术中，柔性显示面板主要是在刚性支撑基底(一般为素玻璃)上制备柔性基板，然后在柔性基板上制备薄膜晶体管和发光元件等；最后，通过机械剥离或激光剥离使柔性基板和刚性支撑基底分离。柔性基板主要为有机高分子材料，主要包括聚酰亚胺(PI)、聚对苯二甲酸乙二醇酯(PET)和聚甲基丙烯酸甲酯(PMMA)等。由于柔性显示面板的制备过程需要高温工艺，一般在300℃以上，因此，PI由于优异的热稳定性而成为最为理想的柔性基板材料。与素玻璃支撑基板相比，无色透明PI(CPI)柔性基板在高温区(300℃以上)的热膨胀系数(CTE)要远大于素玻璃支撑基底，其值一般在30ppm以上。CPI的CTE值过高会导致其尺寸稳定性下降、柔性显示面板易翘曲，与其它膜层的兼容性下降，从而严重影响柔性显示面板的稳定性。\n\n[0004]此外，柔性基板和支撑基底的分离主要通过激光剥离(Laser Lift Off，LLO)工艺，目前主要用高能量的308nm的激光从刚性支撑基底的一侧照射至柔性基板。由于柔性基板与玻璃基底接触界面的PI会存在对光的吸收而炭化分解，导致柔性基板和玻璃基底的粘结性下降，从而实现柔性基板与刚性支撑基底的分离。然而，在激光剥离过程中，一方面，由于308nm波长的激光在素玻璃基底的光学透过率较低(低于60％)，部分能量被玻璃基底吸收，导致能量的利用率降低，功耗过高；另一方面，被激光照射的PI表面区域会存在炭化的现象，导致柔性基板的光学透过率降低和柔性基板表面产生小孔。此外，由于支撑基底或柔性基板表面不可以避免的存在微颗粒，使与微颗粒对应的PI表面无法被激光照射到，导致PI局部无法分离。因此，在最后的分离过程中，应力会集中在未被激光照射的区域，导致PI受损甚至破片。\n\n[0005]因此，现有的柔性显示面板及其制作方法的技术中，还存在着无色透明柔性基板的热膨胀系数过高，导致面板尺寸的稳定性下降，柔性显示面板易翘曲，与其他膜层的兼容性下降，影响柔性显示面板的稳定性或是激光剥离时，素玻璃基底的关系光学透过率较低，部分能量被玻璃基底吸收，导致能量的利用率降低，功耗过高；或是被激光照射的PI表面区域会存在炭化的现象，导致柔性基板的光学透过率降低、柔性基板表面产生小孔，进而导致PI受损甚至破片的问题，急需改进。\n\n发明内容\n\n[0006]本申请涉及一种柔性显示面板的制作方法，用于解决现有技术中存在着无色透明柔性基板的热膨胀系数过高，导致面板尺寸的稳定性下降，柔性显示面板易翘曲，与其他膜层的兼容性下降，影响柔性显示面板的稳定性或是激光剥离时，素玻璃基底的关系光学透过率较低，部分能量被玻璃基底吸收，导致能量的利用率降低，功耗过高；或是被激光照射的PI表面区域会存在炭化的现象，导致柔性基板的光学透过率降低、柔性基板表面产生小孔，进而导致PI受损甚至破片的问题。\n\n[0007]为解决上述问题，本申请提供的技术方案如下：\n\n[0008]本申请提供的一种柔性显示面板的制作方法，包括以下步骤：\n\n[0009]S10，在衬底基板上形成第一柔性基板，所述衬底基板为高光学透过率的无碱素玻璃基底，所述第一柔性基板采用无色透明的聚酰亚胺；\n\n[0010]S20，在所述第一柔性基板的一侧形成缓冲层；\n\n[0011]S30，在所述缓冲层背离所述第一柔性基板的一侧形成第二柔性基板，所述第二柔性基板与所述第一柔性基板的材料和形成方式均相同，所述第二柔性基板的厚度大于等于所述第一柔性基板的厚度；\n\n[0012]S40，在所述第二柔性基板背离所述缓冲层的一侧依次层叠薄膜晶体管层、发光器件层和薄膜封装层；\n\n[0013]S50，采用500nm以上波长的高光学透过率激光从所述衬底基板背离所述第一柔性基板的一侧射入至所述第一柔性基板，将所述衬底基板与所述第一柔性基板分离。\n\n[0014]根据本申请提供的一实施例，步骤“S10”包括：\n\n[0015]S101，将无色透明的聚酰亚胺酸溶液均匀的涂布在所述衬底基板的一侧；\n\n[0016]S102，将涂布有所述聚酰亚胺酸溶液的衬底基板放置在温度范围大于等于200摄氏度的氮气环境中进行亚胺化，得到所述第一柔性基板。\n\n[0017]根据本申请提供的一实施例，所述缓冲层包括：牺牲层、反光层和隔热层。\n\n[0018]根据本申请提供的一实施例，所述牺牲层形成在所述第一柔性基板背离所述衬底基板一侧，所述反光层形成在所述牺牲层背离所述第一柔性基板一侧，所述隔热层形成在所述反光层背离所述牺牲层一侧，且所述牺牲层、所述反光层和所述隔热层均具有一定的预设厚度。\n\n[0019]根据本申请提供的一实施例，所述牺牲层的预设厚度为：100-500埃；所述反光层的预设厚度为500-1000埃；所述隔热层的预设厚度为：1000-2000埃。\n\n[0020]根据本申请提供的一实施例，所述第一柔性基板和所述第二基板均具有一定的预设厚度，所述第一柔性基板的预设厚度为5-10um，所述第二柔性基板的预设厚度为10-20um。\n\n[0021]根据本申请提供的一实施例，所述柔性显示面板为柔性液晶显示面板、柔性发光二极管显示面板或是微型柔性液晶显示面板。\n\n[0022]根据本申请提供的一实施例，所述激光为绿激光。\n\n[0023]根据本申请提供的一实施例，所述绿激光的波长具有一定的预设波长长度。\n\n[0024]根据本申请提供的一实施例，所述绿激光的预设波长长度范围为：大于500nm。\n\n[0025]与现有技术相比，本申请提供的一种柔性显示面板的的制作方法的有益效果为：本申请提供的柔性显示面板的制作方法，首先采用第一柔性基板-缓冲层-第二柔性基板的三明治结构，然后再在所述第二柔性基板背离所述缓冲层的一侧形成薄膜晶体管层、发光器件层和薄膜封装层，最后再采用激光剥离技术将柔性基板和衬底基板进行分离，既可以降低制程工艺中柔性基板的翘曲风险，也可以解决激光剥离过程中，柔性显示面板受损甚至破片的风险。\n\n附图说明\n\n[0026]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0027]图1为现有的柔性显示面板激光波长与光线透过率的曲线示意图。\n\n[0028]图2为现有的柔性显示面板激光波长与柔性基板吸光度的曲线示意图。\n\n[0029]图3为本申请实施例提供的柔性显示面板的制作方法的流程示意图。\n\n[0030]图4为本申请实施例提供的柔性显示面板的结构示意图。\n\n[0031]图5为本申请实施例提供的柔性显示面板激光波长与柔性基板吸光度的曲线示意图。\n\n具体实施方式\n\n[0032]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0033]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0034]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0035]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0036]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0037]现有的柔性显示面板及其制作方法的技术中，还存在着无色透明柔性基板的热膨胀系数过高导致面板尺寸的稳定性下降，柔性显示面板易翘曲，与其他膜层的兼容性下降，影响柔性显示面板的稳定性或是激光剥离时，素玻璃基底的关系光学透过率较低，(308nm激光波长在素玻璃刚性支撑基底的光学透过率低于60％，详见图1)部分能量被玻璃基底吸收，导致能量的利用率降低，功耗过高；或是被激光照射的PI表面区域会存在炭化分解的现象(柔性基板和支撑基板的分离是由于与支撑基板接触的柔性基板表面吸收激光能量而炭化分解，聚酰亚胺柔性基板在308nm激光波长处存在较强吸收，详见图2)，导致柔性基板的光学透过率降低、柔性基板表面产生小孔，进而导致PI受损甚至破片等问题，因此，本申请特提供一种柔性显示面板的制作方法，以解决上述问题。\n\n[0038]参阅图3和图4，分别为本申请实施例提供的一种柔性显示面板的制作方法的流程示意图以及柔性显示面板的结构示意图。该方法包括以下步骤：S10，在衬底基板11上形成第一柔性基板12，所述衬底基板11为高光学透过率的无碱素玻璃基底，所述第一柔性基板12采用无色透明的聚酰亚胺；S20，在所述第一柔性基板12的一侧形成缓冲层13；S30，在所述缓冲层13背离所述第一柔性基板12的一侧形成第二柔性基板14，所述第二柔性基板14与所述第一柔性基板12的材料和形成方式均相同，所述第二柔性基板14的厚度大于等于所述第一柔性基板12的厚度；S40，在所述第二柔性基板14背离所述缓冲层13的一侧依次层叠薄膜晶体管层15、发光器件层16和薄膜封装层17；S50，采用激光剥离技术将所述衬底基板11与所述第一柔性基板12分离。\n\n[0039]进一步地，S101，将无色透明的聚酰亚胺酸溶液均匀的涂布在所述衬底基板11的一侧；S102，将涂布有所述聚酰亚胺酸溶液的衬底基板11放置在温度范围大于等于200摄氏度的氮气环境中进行亚胺化，得到所述第一柔性基板12。\n\n[0040]具体地，所述第一柔性基板12的合成溶剂环境为级性非质子溶剂，如NMP、DMF或是DMAC中的一种。\n\n[0041]进一步地，缓冲层13包括：依次层叠设置的牺牲层131、反光层132和隔热层133；所述牺牲层131为非晶硅、氧化硅、氮化硅的单层或是叠层结构，氢含量为5％-10％，所述氢的百分含量可以通过二次离子质谱(secondary ionmass spectroscopy，SIMS)测量获得，在进行激光照射的过程中，激光束照射到所述牺牲层上，所述牺牲层内的氢原子相互结合形成氢气。氢气气泡的产生迫使所述牺牲层与所述第二柔性基板的界面出现微观分离，减小所述牺牲层与所述第二柔性基板之间的结合力，进而在所述第二柔性基板与所述衬底基板分离时，减小所述第二柔性基板的受力，减小所述第二柔性基板被破坏的概率，使得所述衬底基板与所述第二柔性基板可以轻易的分离。所述隔热层133为无色透明的纳米多孔绝缘材料，以保证高的光透过率。\n\n[0042]进一步地，所述牺牲层131形成在所述第一柔性基板12背离所述衬底基板11一侧，所述反光层132形成在所述牺牲层131背离所述第一柔性基板12一侧，至少形成在所述牺牲层131上的一部分区域；所述隔热层133形成在所述反光层132背离所述牺牲层131一侧，且所述牺牲层131、所述反光层132和所述隔热层133均具有一定的预设厚度。所述牺牲层131的预设厚度为：100-500埃；所述反光层132的预设厚度为500-1000埃；所述隔热层133的预设厚度为：1000-2000埃。\n\n[0043]进一步地，所述第一柔性基板12和所述第二基板14均具有一定的预设厚度，所述第一柔性基板12的预设厚度为5-10um，所述第二柔性基板14的预设厚度为10-20um。进一步地，所述第一柔性基板12玻璃化后的温度大于400摄氏度，500nm以下的光线透过率极小，500纳米以上的光线透过率大于等于90％(详见图5)，且所述第二柔性基板14基本不会受到激光的损伤。\n\n[0044]进一步地，所述第一柔性基板12和所述第二柔性基板14的分子主链中含有硅氧烷链段；所述第一柔性基板12和所述第二柔性基板14分子的主链或侧链结构中含有-F、-CF3和-C(CF3)2-取代基中的一种或多种的组合；所述第一柔性基板12和所述第二柔性基板14分子主链结构中含有四元环和六元环中的一种或是多种的组合；所述第一柔性基板12和所述第二柔性基板14的分子主链结构中含有柔性-O-和-S-中的一种或多种的组合；其中，所述第一柔性基板12和所述第二柔性基板14中氟元素的质量分数为20wt％-54w％，以此能够在保证牺牲层的耐热性、耐化学腐蚀和耐久性的情况下，降低去除牺牲层的难度，因为当氟的含量越高时，所述牺牲层的耐热性、耐化学腐蚀性和耐久性就越好，但随着氟含量的升高，去除所述牺牲层的难度也越大，影响所述牺牲层的分解；分子结构中硅氧烷链段的质量分数2wt％-5wt％。\n\n[0045]进一步地，所述激光为绿激光，且所述绿激光的波长具有一定的预设波长长度；所述绿激光的预设波长长度范围为：大于500nm。\n\n[0046]因此，本申请提供的柔性显示面板的制作方法的有益效果为：首先采用第一柔性基板-缓冲层-第二柔性基板的三明治结构，然后再在所述第二柔性基板背离所述缓冲层的一侧形成薄膜晶体管层、发光器件层和薄膜封装层，最后再采用激光剥离技术将柔性基板和衬底基板进行分离，既可以降低制程工艺中柔性基板的翘曲风险，也可以解决激光剥离过程中，柔性显示面板受损甚至破片的风险。\n\n[0047]以上对本申请实施例所提供的一种柔性显示面板的制作方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示领域，特别是涉及一种柔性显示面板的制作方法。\n\n背景技术\n\n[0002]有机电致发光(Organic Light Emitting Display，OLED)显示面板由于具有柔性可弯折、便于携带、高对比度以及反应时间短等优势，正在逐步替代液晶显示面板(LCD)，成为具备革命性的下一代显示产品，但是，OLED显示面板由于其价格高以及寿命相对较短等原因，限制了其发展普及，OLED显示面板生产过程中的良率较低问题一直成为限制其价格下降的重要因素。\n\n[0003]现有技术中，柔性显示面板主要是在刚性支撑基底(一般为素玻璃)上制备柔性基板，然后在柔性基板上制备薄膜晶体管和发光元件等；最后，通过机械剥离或激光剥离使柔性基板和刚性支撑基底分离。柔性基板主要为有机高分子材料，主要包括聚酰亚胺(PI)、聚对苯二甲酸乙二醇酯(PET)和聚甲基丙烯酸甲酯(PMMA)等。由于柔性显示面板的制备过程需要高温工艺，一般在300℃以上，因此，PI由于优异的热稳定性而成为最为理想的柔性基板材料。与素玻璃支撑基板相比，无色透明PI(CPI)柔性基板在高温区(300℃以上)的热膨胀系数(CTE)要远大于素玻璃支撑基底，其值一般在30ppm以上。CPI的CTE值过高会导致其尺寸稳定性下降、柔性显示面板易翘曲，与其它膜层的兼容性下降，从而严重影响柔性显示面板的稳定性。\n\n[0004]此外，柔性基板和支撑基底的分离主要通过激光剥离(Laser Lift Off，LLO)工艺，目前主要用高能量的308nm的激光从刚性支撑基底的一侧照射至柔性基板。由于柔性基板与玻璃基底接触界面的PI会存在对光的吸收而炭化分解，导致柔性基板和玻璃基底的粘结性下降，从而实现柔性基板与刚性支撑基底的分离。然而，在激光剥离过程中，一方面，由于308nm波长的激光在素玻璃基底的光学透过率较低(低于60％)，部分能量被玻璃基底吸收，导致能量的利用率降低，功耗过高；另一方面，被激光照射的PI表面区域会存在炭化的现象，导致柔性基板的光学透过率降低和柔性基板表面产生小孔。此外，由于支撑基底或柔性基板表面不可以避免的存在微颗粒，使与微颗粒对应的PI表面无法被激光照射到，导致PI局部无法分离。因此，在最后的分离过程中，应力会集中在未被激光照射的区域，导致PI受损甚至破片。\n\n[0005]因此，现有的柔性显示面板及其制作方法的技术中，还存在着无色透明柔性基板的热膨胀系数过高，导致面板尺寸的稳定性下降，柔性显示面板易翘曲，与其他膜层的兼容性下降，影响柔性显示面板的稳定性或是激光剥离时，素玻璃基底的关系光学透过率较低，部分能量被玻璃基底吸收，导致能量的利用率降低，功耗过高；或是被激光照射的PI表面区域会存在炭化的现象，导致柔性基板的光学透过率降低、柔性基板表面产生小孔，进而导致PI受损甚至破片的问题，急需改进。\n\n发明内容\n\n[0006]本申请涉及一种柔性显示面板的制作方法，用于解决现有技术中存在着无色透明柔性基板的热膨胀系数过高，导致面板尺寸的稳定性下降，柔性显示面板易翘曲，与其他膜层的兼容性下降，影响柔性显示面板的稳定性或是激光剥离时，素玻璃基底的关系光学透过率较低，部分能量被玻璃基底吸收，导致能量的利用率降低，功耗过高；或是被激光照射的PI表面区域会存在炭化的现象，导致柔性基板的光学透过率降低、柔性基板表面产生小孔，进而导致PI受损甚至破片的问题。\n\n[0007]为解决上述问题，本申请提供的技术方案如下：\n\n[0008]本申请提供的一种柔性显示面板的制作方法，包括以下步骤：\n\n[0009]S10，在衬底基板上形成第一柔性基板，所述衬底基板为高光学透过率的无碱素玻璃基底，所述第一柔性基板采用无色透明的聚酰亚胺；\n\n[0010]S20，在所述第一柔性基板的一侧形成缓冲层；\n\n[0011]S30，在所述缓冲层背离所述第一柔性基板的一侧形成第二柔性基板，所述第二柔性基板与所述第一柔性基板的材料和形成方式均相同，所述第二柔性基板的厚度大于等于所述第一柔性基板的厚度；\n\n[0012]S40，在所述第二柔性基板背离所述缓冲层的一侧依次层叠薄膜晶体管层、发光器件层和薄膜封装层；\n\n[0013]S50，采用500nm以上波长的高光学透过率激光从所述衬底基板背离所述第一柔性基板的一侧射入至所述第一柔性基板，将所述衬底基板与所述第一柔性基板分离。\n\n[0014]根据本申请提供的一实施例，步骤“S10”包括：\n\n[0015]S101，将无色透明的聚酰亚胺酸溶液均匀的涂布在所述衬底基板的一侧；\n\n[0016]S102，将涂布有所述聚酰亚胺酸溶液的衬底基板放置在温度范围大于等于200摄氏度的氮气环境中进行亚胺化，得到所述第一柔性基板。\n\n[0017]根据本申请提供的一实施例，所述缓冲层包括：牺牲层、反光层和隔热层。\n\n[0018]根据本申请提供的一实施例，所述牺牲层形成在所述第一柔性基板背离所述衬底基板一侧，所述反光层形成在所述牺牲层背离所述第一柔性基板一侧，所述隔热层形成在所述反光层背离所述牺牲层一侧，且所述牺牲层、所述反光层和所述隔热层均具有一定的预设厚度。\n\n[0019]根据本申请提供的一实施例，所述牺牲层的预设厚度为：100-500埃；所述反光层的预设厚度为500-1000埃；所述隔热层的预设厚度为：1000-2000埃。\n\n[0020]根据本申请提供的一实施例，所述第一柔性基板和所述第二基板均具有一定的预设厚度，所述第一柔性基板的预设厚度为5-10um，所述第二柔性基板的预设厚度为10-20um。\n\n[0021]根据本申请提供的一实施例，所述柔性显示面板为柔性液晶显示面板、柔性发光二极管显示面板或是微型柔性液晶显示面板。\n\n[0022]根据本申请提供的一实施例，所述激光为绿激光。\n\n[0023]根据本申请提供的一实施例，所述绿激光的波长具有一定的预设波长长度。\n\n[0024]根据本申请提供的一实施例，所述绿激光的预设波长长度范围为：大于500nm。\n\n[0025]与现有技术相比，本申请提供的一种柔性显示面板的的制作方法的有益效果为：本申请提供的柔性显示面板的制作方法，首先采用第一柔性基板-缓冲层-第二柔性基板的三明治结构，然后再在所述第二柔性基板背离所述缓冲层的一侧形成薄膜晶体管层、发光器件层和薄膜封装层，最后再采用激光剥离技术将柔性基板和衬底基板进行分离，既可以降低制程工艺中柔性基板的翘曲风险，也可以解决激光剥离过程中，柔性显示面板受损甚至破片的风险。\n\n附图说明\n\n[0026]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0027]图1为现有的柔性显示面板激光波长与光线透过率的曲线示意图。\n\n[0028]图2为现有的柔性显示面板激光波长与柔性基板吸光度的曲线示意图。\n\n[0029]图3为本申请实施例提供的柔性显示面板的制作方法的流程示意图。\n\n[0030]图4为本申请实施例提供的柔性显示面板的结构示意图。\n\n[0031]图5为本申请实施例提供的柔性显示面板激光波长与柔性基板吸光度的曲线示意图。\n\n具体实施方式\n\n[0032]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0033]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0034]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0035]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0036]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0037]现有的柔性显示面板及其制作方法的技术中，还存在着无色透明柔性基板的热膨胀系数过高导致面板尺寸的稳定性下降，柔性显示面板易翘曲，与其他膜层的兼容性下降，影响柔性显示面板的稳定性或是激光剥离时，素玻璃基底的关系光学透过率较低，(308nm激光波长在素玻璃刚性支撑基底的光学透过率低于60％，详见图1)部分能量被玻璃基底吸收，导致能量的利用率降低，功耗过高；或是被激光照射的PI表面区域会存在炭化分解的现象(柔性基板和支撑基板的分离是由于与支撑基板接触的柔性基板表面吸收激光能量而炭化分解，聚酰亚胺柔性基板在308nm激光波长处存在较强吸收，详见图2)，导致柔性基板的光学透过率降低、柔性基板表面产生小孔，进而导致PI受损甚至破片等问题，因此，本申请特提供一种柔性显示面板的制作方法，以解决上述问题。\n\n[0038]参阅图3和图4，分别为本申请实施例提供的一种柔性显示面板的制作方法的流程示意图以及柔性显示面板的结构示意图。该方法包括以下步骤：S10，在衬底基板11上形成第一柔性基板12，所述衬底基板11为高光学透过率的无碱素玻璃基底，所述第一柔性基板12采用无色透明的聚酰亚胺；S20，在所述第一柔性基板12的一侧形成缓冲层13；S30，在所述缓冲层13背离所述第一柔性基板12的一侧形成第二柔性基板14，所述第二柔性基板14与所述第一柔性基板12的材料和形成方式均相同，所述第二柔性基板14的厚度大于等于所述第一柔性基板12的厚度；S40，在所述第二柔性基板14背离所述缓冲层13的一侧依次层叠薄膜晶体管层15、发光器件层16和薄膜封装层17；S50，采用激光剥离技术将所述衬底基板11与所述第一柔性基板12分离。\n\n[0039]进一步地，S101，将无色透明的聚酰亚胺酸溶液均匀的涂布在所述衬底基板11的一侧；S102，将涂布有所述聚酰亚胺酸溶液的衬底基板11放置在温度范围大于等于200摄氏度的氮气环境中进行亚胺化，得到所述第一柔性基板12。\n\n[0040]具体地，所述第一柔性基板12的合成溶剂环境为级性非质子溶剂，如NMP、DMF或是DMAC中的一种。\n\n[0041]进一步地，缓冲层13包括：依次层叠设置的牺牲层131、反光层132和隔热层133；所述牺牲层131为非晶硅、氧化硅、氮化硅的单层或是叠层结构，氢含量为5％-10％，所述氢的百分含量可以通过二次离子质谱(secondary ionmass spectroscopy，SIMS)测量获得，在进行激光照射的过程中，激光束照射到所述牺牲层上，所述牺牲层内的氢原子相互结合形成氢气。氢气气泡的产生迫使所述牺牲层与所述第二柔性基板的界面出现微观分离，减小所述牺牲层与所述第二柔性基板之间的结合力，进而在所述第二柔性基板与所述衬底基板分离时，减小所述第二柔性基板的受力，减小所述第二柔性基板被破坏的概率，使得所述衬底基板与所述第二柔性基板可以轻易的分离。所述隔热层133为无色透明的纳米多孔绝缘材料，以保证高的光透过率。\n\n[0042]进一步地，所述牺牲层131形成在所述第一柔性基板12背离所述衬底基板11一侧，所述反光层132形成在所述牺牲层131背离所述第一柔性基板12一侧，至少形成在所述牺牲层131上的一部分区域；所述隔热层133形成在所述反光层132背离所述牺牲层131一侧，且所述牺牲层131、所述反光层132和所述隔热层133均具有一定的预设厚度。所述牺牲层131的预设厚度为：100-500埃；所述反光层132的预设厚度为500-1000埃；所述隔热层133的预设厚度为：1000-2000埃。\n\n[0043]进一步地，所述第一柔性基板12和所述第二基板14均具有一定的预设厚度，所述第一柔性基板12的预设厚度为5-10um，所述第二柔性基板14的预设厚度为10-20um。进一步地，所述第一柔性基板12玻璃化后的温度大于400摄氏度，500nm以下的光线透过率极小，500纳米以上的光线透过率大于等于90％(详见图5)，且所述第二柔性基板14基本不会受到激光的损伤。\n\n[0044]进一步地，所述第一柔性基板12和所述第二柔性基板14的分子主链中含有硅氧烷链段；所述第一柔性基板12和所述第二柔性基板14分子的主链或侧链结构中含有-F、-CF3和-C(CF3)2-取代基中的一种或多种的组合；所述第一柔性基板12和所述第二柔性基板14分子主链结构中含有四元环和六元环中的一种或是多种的组合；所述第一柔性基板12和所述第二柔性基板14的分子主链结构中含有柔性-O-和-S-中的一种或多种的组合；其中，所述第一柔性基板12和所述第二柔性基板14中氟元素的质量分数为20wt％-54w％，以此能够在保证牺牲层的耐热性、耐化学腐蚀和耐久性的情况下，降低去除牺牲层的难度，因为当氟的含量越高时，所述牺牲层的耐热性、耐化学腐蚀性和耐久性就越好，但随着氟含量的升高，去除所述牺牲层的难度也越大，影响所述牺牲层的分解；分子结构中硅氧烷链段的质量分数2wt％-5wt％。\n\n[0045]进一步地，所述激光为绿激光，且所述绿激光的波长具有一定的预设波长长度；所述绿激光的预设波长长度范围为：大于500nm。\n\n[0046]因此，本申请提供的柔性显示面板的制作方法的有益效果为：首先采用第一柔性基板-缓冲层-第二柔性基板的三明治结构，然后再在所述第二柔性基板背离所述缓冲层的一侧形成薄膜晶体管层、发光器件层和薄膜封装层，最后再采用激光剥离技术将柔性基板和衬底基板进行分离，既可以降低制程工艺中柔性基板的翘曲风险，也可以解决激光剥离过程中，柔性显示面板受损甚至破片的风险。\n\n[0047]以上对本申请实施例所提供的一种柔性显示面板的制作方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10783, 23837, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种阵列基板及显示装置。\n\n背景技术\n\n[0002]目前，在亚毫米发光二极管(mini-LED)组成的背光模组上涂覆白油用来反射亚毫米发光二极管发出的光的同时，且能起到防刮伤的作用。然而，涂覆白油作为一道单独的制程会增加背光模组的制造成本。\n\n[0003]因此，有必要提出一种技术方案以制作反射层的同时能降低制造成本。\n\n发明内容\n\n[0004]本申请的目的在于提供一种阵列基板及显示装置，以解决传统白油作为反射层需要单独制程导致制造成本高的问题。\n\n[0005]为实现上述目的，本申请提供一种阵列基板，所述阵列基板包括基板、阵列层、钝化层以及发光元件，\n\n[0006]所述阵列层设置于所述基板上，所述发光元件设置于所述阵列层上；\n\n[0007]所述钝化层形成于所述阵列层远离所述基板的一侧，所述钝化层包括依次叠置的第一介质层、第二介质层以及第三介质层，所述第一介质层靠近所述阵列层，所述第三介质层远离所述阵列层，所述第一介质层的折射率与所述第二介质层的折射率相异，所述第二介质层的折射率与所述第三介质层的折射率相异。\n\n[0008]在上述阵列基板中，所述第二介质层的折射率大于所述第一介质层的折射率和所述第三介质层的折射率。\n\n[0009]在上述阵列基板中，所述第二介质层的折射率与所述第一介质层的折射率的差值大于或等于1且小于或等于3，所述第二介质层的折射率与所述第三介质层的折射率的差值大于或等于1且小于或等于3。\n\n[0010]在上述阵列基板中，所述第一介质层和所述第三介质层为氮化硅层，所述第二介质层为非晶硅层，所述第一介质层的厚度为640埃-660埃，所述第二介质层的厚度为160埃-180埃，所述第三介质层的厚度为600埃-1200埃。\n\n[0011]在上述阵列基板中，所述钝化层还包括第四介质层，所述第四介质层形成于所述第三介质层远离所述阵列层的一侧，所述第四介质层的折射率与所述第三介质层的折射率的差值大于所述第二介质层的折射率与所述第一介质层的折射率的差值。\n\n[0012]在上述阵列基板中，所述第一介质层为氮化硅层，所述第三介质层为氧化硅层，所述第二介质层和所述第四介质层均为非晶硅层，所述第一介质层的厚度为2400埃-2500埃，所述第二介质层的厚度为235埃-255埃，所述第三介质层的厚度为1050埃-1080埃，所述第四介质层的厚度为190埃-220埃。\n\n[0013]在上述阵列基板中，所述阵列基板还包括氧化铟锡层，所述氧化铟锡层位于所述钝化层远离所述阵列层的一侧，所述氧化铟锡层的厚度为480埃-520埃。\n\n[0014]在上述阵列基板中，所述钝化层上具有通孔，所述通孔由内壁围合而成，所述内壁的坡角的取值范围为18°-87°。\n\n[0015]在上述阵列基板中，所述发光元件为亚毫米发光二极管或微型发光二极管中的一种。\n\n[0016]一种显示装置，所述显示装置包括背光模组，所述背光模组包括上述阵列基板，或，所述显示装置包括显示面板，所述显示面板包括上述阵列基板。\n\n[0017]有益效果：本申请提供一种阵列基板及显示装置，阵列基板包括基板、阵列层、钝化层以及发光元件，阵列层设置于基板上，发光元件设置于阵列层上，钝化层形成于阵列层远离基板的一侧，钝化层包括依次叠置的第一介质层、第二介质层以及第三介质层，第一介质层靠近阵列层，第三介质层远离阵列层，第一介质层的折射率与第二介质层的折射率相异，第二介质层的折射率与第三介质层的折射率相异。本申请钝化层起到反射作用，相对于涂覆白油作为一道单独制程，节省阵列基板的制造成本且提升阵列基板的良率。相对于传统反射层由两个不同折射率介质层组成，本申请钝化层配合合适的厚度对波长为450纳米的光进行反射，且对波长为450纳米的光的反射率高达88％。\n\n附图说明\n\n[0018]图1为本申请实施例背光模组的示意图；\n\n[0019]图2为本申请实施一背光模组中钝化层对不同波长的光的反射率的示意图；\n\n[0020]图3为本申请实施例三背光模组中钝化层对不同波长的光的反射率的示意图；\n\n[0021]图4为本申请实施例五背光模组中钝化层以及氧化铟锡层构成的反射层对不同波长的光的反射率的示意图。\n\n具体实施方式\n\n[0022]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0023]请参阅图1，其为本申请实施例背光模组的示意图。背光模组100包括阵列基板，阵列基板包括基板101、阵列层102、钝化层103、发光元件105以及氧化铟锡层104。\n\n[0024]基板101为玻璃基板。阵列层102设置于基板101上。发光元件105设置于阵列层102上。阵列层102包括多个阵列排布的薄膜晶体管(未示出)，薄膜晶体管可以为背蚀沟道型薄膜晶体管或刻蚀阻挡型薄膜晶体管。阵列层102还包括导电电极，每个发光元件105与阵列层102中的两个导电电极通过导电胶或焊锡连接，其中一个导电电极与薄膜晶体管的漏极连接。发光元件105为亚毫米发光二极管。每个发光元件105包括一个红光亚毫米发光二极管、一个蓝光亚毫米发光二极管以及一个绿光亚毫米发光二极管。\n\n[0025]钝化层103形成于阵列层102远离基板101的一侧，钝化层103包括依次叠置的第一介质层、第二介质层以及第三介质层，第一介质层靠近阵列层102，第三介质层远离阵列层102，第一介质层的折射率与第二介质层的折射率相异，第二介质层的折射率与第三介质层的折射率相异。第一介质层的折射率和第二介质层的折射率不同对光起到反射作用，配合第二介质层的折射率与第三介质层的折射率不同，实现对光的反射。\n\n[0026]本申请背光模组通过钝化层包括依次叠置的第一介质层、第二介质层以及第三介质层，第一介质层的折射率与第二介质层的折射率相异，第二介质层的折射率与第三介质层的折射率相异，以实现钝化层对光的反射率，钝化层为背光模组的一道制程，相对于传统白色油墨涂覆需要增加一道单独的制程，调试钝化层膜层结构以及膜质，达到白色油墨反射率水准相当的光反射效果以及防刮伤效果。发明人基于大量实验发现，传统钝化层为叠置于阵列层上的氮化硅以及氧化硅膜层时，对450纳米的光的反射率最大值为68％，无法与白色油墨的反射率相当的反射率，而本申请采用钝化层为三个膜层，能实现与白色油墨相当的反射率。\n\n[0027]在一些实施例中，第二介质层的折射率大于第一介质层的折射率和第三介质层的折射率，光从第二介质入射至第一介质层为从光密介质到光疏介质，以使光在第一介质层和第二介质层之间的反射的可能性提高。第一介质层的折射率大于或等于第三介质层的折射率。\n\n[0028]在一些实施例中，第二介质层的折射率与第一介质层的折射率的差值大于或等于1且小于或等于3，第二介质层的折射率与第三介质层的折射率的差值大于或等于1且小于或等于3。例如，第二介质层的折射率与第一介质层的折射率的差值为1.2、1.5、1.8、2.0、2.4、2.8，第二介质层的折射率与第三介质层的折射率的差值为1.2、1.5、1.8、2.0、2.2、2.4、2.8。\n\n[0029]在一些实施例中，第二介质层的折射率与第三介质层的折射率的差值大于第二介质层的折射率与第一介质层的折射率的差值。\n\n[0030]具体地，第一介质层和第三介质层为氮化硅层，第二介质层为非晶硅层，第一介质层的厚度为640埃-660埃，第二介质层的厚度为160埃-180埃，第三介质层的厚度为600埃-1200埃。通过第一介质层、第二介质层以及第三介质层的折射率高低匹配，以实现光的反射率，配合合适厚度的选择，以实现对波长为440纳米-460纳米的光进行选择性的反射。\n\n[0031]在一些实施例中，钝化层还包括第四介质层，第四介质层形成于第三介质层远离阵列层的一侧，第四介质层的折射率与第三介质层的折射率的差值大于第二介质层的折射率与第一介质层的折射率的差值，以进一步增加对光的反射率。\n\n[0032]具体地，第一介质层为氮化硅，第三介质层为氧化硅层，第二介质层和第四介质层均为非晶硅层，第一介质层的厚度为2400埃-2500埃，第二介质层的厚度为235埃-255埃，第三介质层的厚度为1050埃-1080埃，第四介质层的厚度为190埃-220埃。氮化硅的折射率为1.88，氧化硅的折射率为1.4，非晶硅的折射率为3.0-4.0。\n\n[0033]氧化铟锡层104位于钝化层103远离阵列层102的一侧，氧化铟锡层104的厚度为480埃-520埃。氧化铟锡层104一方面起到用于绑定芯片的作用，另一方面选择合适的厚度配合钝化层103实现光的反射。\n\n[0034]如图1所示，钝化层103上具有通孔，通孔由内壁103a围合而成，内壁103a的坡脚的取值范围为18°-87°，例如坡脚为20°、30°、40°以及65°。相对于传统钝化层为单层，钝化层103由不同膜层组成以实现反射时，蚀刻钝化层103以形成通孔会由于钝化层由不同膜层组成，不同膜层蚀刻速率存在差异导致坡(Taper)脚过大而导致氧化铟锡层104在通孔中形成不连续的膜层，导致与氧化铟锡层104连接的芯片绑定良率降低，且会导致阵列层102中的栅极绝缘层等出现undercut(栅极绝缘层过度蚀刻)现象。内壁103a的坡脚的取值范围为18°-87°可以通过优化钝化层103的蚀刻工艺实现，也可以通过优化钝化层103的膜层组成实现。\n\n[0035]本申请还提供一种显示装置，显示装置包括液晶显示面板以及上述背光模组，或，显示装置包括显示面板，显示面板包括上述阵列基板，不同之处在于，显示面板包括上述阵列基板时，发光元件105为微型发光二极管。\n\n[0036]以下结合具体实施例和对比例对上述方案进行详述。\n\n[0037]实施例一\n\n[0038]本实施例提供一种背光模组，背光模组包括阵列基板以及钝化层，阵列基板包括基板、阵列层以及亚毫米发光二极管，阵列层设置于基板上，亚毫米发光二极管设置于阵列层上，钝化层设置于阵列层上，钝化层包括依次设置于阵列层上的氮化硅层(厚度2400埃)、非晶硅层(厚度240埃)、氧化硅层(厚度1080埃)以及非晶硅层(厚度210埃)。其中，钝化层对波长为450纳米的光的反射率为78.6％，钝化层对不同波长的光的反射率如图2所示。\n\n[0039]实施例二\n\n[0040]本实施例提供一种背光模组，本实施例背光模组与实施例一中背光模组基本相似，不同之处在于，钝化层包括依次设置于阵列层上的氮化硅层(厚度2420埃)、非晶硅层(厚度250埃)、氧化硅层(厚度为1060埃)、非晶硅层(厚度200埃)以及氧化硅层(厚度为760埃)，背光模组还包括设置于钝化层远离阵列层一侧的氧化铟锡层(厚度为500埃)。其中，钝化层以及氧化铟锡层组成的反射层对波长为450纳米的光的反射率为88％。\n\n[0041]实施例三\n\n[0042]本实施例提供一种背光模组，本实施例背光模组与实施一背光模组基本相似，不同之处在于，钝化层包括依次设置于阵列层上的氮化硅层(厚度2400埃)、氧化铟锡层(厚度为500埃)、氧化硅层(厚度为750埃)、非晶硅层(厚度为250埃)、氧化硅层(厚度为1050埃)以及非晶硅层(厚度为196埃)。其中，钝化层对波长为450纳米的反射率为78.6％，钝化层对不同波长的光的反射率如图3示。\n\n[0043]实施例四\n\n[0044]本实施例提供一种背光模组，本实施例背光模组与实施例一中背光模组基本相似，不同之处在于，钝化层包括依次设置于阵列层上的氮化硅层(厚度为658埃)、非晶硅层(厚度为170埃)以及氮化硅层(厚度1200埃)。其中，钝化层以及氧化铟锡层对波长为450纳米的光的反射率为79％。\n\n[0045]实施例五\n\n[0046]本实施例提供一种背光模组，本实施例背光模组与实施例一中背光模组基本相似，不同之处在于，钝化层包括依次设置于阵列层上的氮化硅层(厚度为650埃)、非晶硅层(厚度为178埃)以及氮化硅层(厚度600埃)，背光模组还包括设置于钝化层远离阵列层一侧的氧化铟锡层(厚度为500埃)。其中，钝化层以及氧化铟锡层对波长为450纳米的光的反射率为83.8％。本实施例钝化层以及氧化铟锡层构成的反射层对不同波长的光的反射率如图4所示。\n\n[0047]对比例一\n\n[0048]本实施例提供一种背光模组，本实施例背光模组与实施例一中背光模组基板相似，不同之处在于，钝化层包括依次设置于阵列层上的氮化硅(厚度为950埃)以及氧化硅层(1500埃)。其中，钝化层对波长为450纳米的光的反射率为68％。\n\n[0049]由实施一至实施五可知，本申请实施例钝化层为三层或三层以上介质层组成时，配合合适的厚度选择，对波长为450纳米的光的反射率大于或等于78.6％。而对比例中钝化层为两个不同折射率膜层时，钝化层对波长为450纳米的光的反射率为68％，钝化层为两个不同折射率膜层时对波长为450纳米的光的反射率小于钝化层为三个介质层对波长为450纳米的光的反射率。由实施一、实施二以及实施三可知，合适厚度的氧化铟锡层选择以及氧化铟锡的合适位置设置，才会明显增加钝化层以及氧化铟锡层构成的反射层的折射率。\n\n[0050]以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种阵列基板及显示装置。\n\n背景技术\n\n[0002]目前，在亚毫米发光二极管(mini-LED)组成的背光模组上涂覆白油用来反射亚毫米发光二极管发出的光的同时，且能起到防刮伤的作用。然而，涂覆白油作为一道单独的制程会增加背光模组的制造成本。\n\n[0003]因此，有必要提出一种技术方案以制作反射层的同时能降低制造成本。\n\n发明内容\n\n[0004]本申请的目的在于提供一种阵列基板及显示装置，以解决传统白油作为反射层需要单独制程导致制造成本高的问题。\n\n[0005]为实现上述目的，本申请提供一种阵列基板，所述阵列基板包括基板、阵列层、钝化层以及发光元件，\n\n[0006]所述阵列层设置于所述基板上，所述发光元件设置于所述阵列层上；\n\n[0007]所述钝化层形成于所述阵列层远离所述基板的一侧，所述钝化层包括依次叠置的第一介质层、第二介质层以及第三介质层，所述第一介质层靠近所述阵列层，所述第三介质层远离所述阵列层，所述第一介质层的折射率与所述第二介质层的折射率相异，所述第二介质层的折射率与所述第三介质层的折射率相异。\n\n[0008]在上述阵列基板中，所述第二介质层的折射率大于所述第一介质层的折射率和所述第三介质层的折射率。\n\n[0009]在上述阵列基板中，所述第二介质层的折射率与所述第一介质层的折射率的差值大于或等于1且小于或等于3，所述第二介质层的折射率与所述第三介质层的折射率的差值大于或等于1且小于或等于3。\n\n[0010]在上述阵列基板中，所述第一介质层和所述第三介质层为氮化硅层，所述第二介质层为非晶硅层，所述第一介质层的厚度为640埃-660埃，所述第二介质层的厚度为160埃-180埃，所述第三介质层的厚度为600埃-1200埃。\n\n[0011]在上述阵列基板中，所述钝化层还包括第四介质层，所述第四介质层形成于所述第三介质层远离所述阵列层的一侧，所述第四介质层的折射率与所述第三介质层的折射率的差值大于所述第二介质层的折射率与所述第一介质层的折射率的差值。\n\n[0012]在上述阵列基板中，所述第一介质层为氮化硅层，所述第三介质层为氧化硅层，所述第二介质层和所述第四介质层均为非晶硅层，所述第一介质层的厚度为2400埃-2500埃，所述第二介质层的厚度为235埃-255埃，所述第三介质层的厚度为1050埃-1080埃，所述第四介质层的厚度为190埃-220埃。\n\n[0013]在上述阵列基板中，所述阵列基板还包括氧化铟锡层，所述氧化铟锡层位于所述钝化层远离所述阵列层的一侧，所述氧化铟锡层的厚度为480埃-520埃。\n\n[0014]在上述阵列基板中，所述钝化层上具有通孔，所述通孔由内壁围合而成，所述内壁的坡角的取值范围为18°-87°。\n\n[0015]在上述阵列基板中，所述发光元件为亚毫米发光二极管或微型发光二极管中的一种。\n\n[0016]一种显示装置，所述显示装置包括背光模组，所述背光模组包括上述阵列基板，或，所述显示装置包括显示面板，所述显示面板包括上述阵列基板。\n\n[0017]有益效果：本申请提供一种阵列基板及显示装置，阵列基板包括基板、阵列层、钝化层以及发光元件，阵列层设置于基板上，发光元件设置于阵列层上，钝化层形成于阵列层远离基板的一侧，钝化层包括依次叠置的第一介质层、第二介质层以及第三介质层，第一介质层靠近阵列层，第三介质层远离阵列层，第一介质层的折射率与第二介质层的折射率相异，第二介质层的折射率与第三介质层的折射率相异。本申请钝化层起到反射作用，相对于涂覆白油作为一道单独制程，节省阵列基板的制造成本且提升阵列基板的良率。相对于传统反射层由两个不同折射率介质层组成，本申请钝化层配合合适的厚度对波长为450纳米的光进行反射，且对波长为450纳米的光的反射率高达88％。\n\n附图说明\n\n[0018]图1为本申请实施例背光模组的示意图；\n\n[0019]图2为本申请实施一背光模组中钝化层对不同波长的光的反射率的示意图；\n\n[0020]图3为本申请实施例三背光模组中钝化层对不同波长的光的反射率的示意图；\n\n[0021]图4为本申请实施例五背光模组中钝化层以及氧化铟锡层构成的反射层对不同波长的光的反射率的示意图。\n\n具体实施方式\n\n[0022]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0023]请参阅图1，其为本申请实施例背光模组的示意图。背光模组100包括阵列基板，阵列基板包括基板101、阵列层102、钝化层103、发光元件105以及氧化铟锡层104。\n\n[0024]基板101为玻璃基板。阵列层102设置于基板101上。发光元件105设置于阵列层102上。阵列层102包括多个阵列排布的薄膜晶体管(未示出)，薄膜晶体管可以为背蚀沟道型薄膜晶体管或刻蚀阻挡型薄膜晶体管。阵列层102还包括导电电极，每个发光元件105与阵列层102中的两个导电电极通过导电胶或焊锡连接，其中一个导电电极与薄膜晶体管的漏极连接。发光元件105为亚毫米发光二极管。每个发光元件105包括一个红光亚毫米发光二极管、一个蓝光亚毫米发光二极管以及一个绿光亚毫米发光二极管。\n\n[0025]钝化层103形成于阵列层102远离基板101的一侧，钝化层103包括依次叠置的第一介质层、第二介质层以及第三介质层，第一介质层靠近阵列层102，第三介质层远离阵列层102，第一介质层的折射率与第二介质层的折射率相异，第二介质层的折射率与第三介质层的折射率相异。第一介质层的折射率和第二介质层的折射率不同对光起到反射作用，配合第二介质层的折射率与第三介质层的折射率不同，实现对光的反射。\n\n[0026]本申请背光模组通过钝化层包括依次叠置的第一介质层、第二介质层以及第三介质层，第一介质层的折射率与第二介质层的折射率相异，第二介质层的折射率与第三介质层的折射率相异，以实现钝化层对光的反射率，钝化层为背光模组的一道制程，相对于传统白色油墨涂覆需要增加一道单独的制程，调试钝化层膜层结构以及膜质，达到白色油墨反射率水准相当的光反射效果以及防刮伤效果。发明人基于大量实验发现，传统钝化层为叠置于阵列层上的氮化硅以及氧化硅膜层时，对450纳米的光的反射率最大值为68％，无法与白色油墨的反射率相当的反射率，而本申请采用钝化层为三个膜层，能实现与白色油墨相当的反射率。\n\n[0027]在一些实施例中，第二介质层的折射率大于第一介质层的折射率和第三介质层的折射率，光从第二介质入射至第一介质层为从光密介质到光疏介质，以使光在第一介质层和第二介质层之间的反射的可能性提高。第一介质层的折射率大于或等于第三介质层的折射率。\n\n[0028]在一些实施例中，第二介质层的折射率与第一介质层的折射率的差值大于或等于1且小于或等于3，第二介质层的折射率与第三介质层的折射率的差值大于或等于1且小于或等于3。例如，第二介质层的折射率与第一介质层的折射率的差值为1.2、1.5、1.8、2.0、2.4、2.8，第二介质层的折射率与第三介质层的折射率的差值为1.2、1.5、1.8、2.0、2.2、2.4、2.8。\n\n[0029]在一些实施例中，第二介质层的折射率与第三介质层的折射率的差值大于第二介质层的折射率与第一介质层的折射率的差值。\n\n[0030]具体地，第一介质层和第三介质层为氮化硅层，第二介质层为非晶硅层，第一介质层的厚度为640埃-660埃，第二介质层的厚度为160埃-180埃，第三介质层的厚度为600埃-1200埃。通过第一介质层、第二介质层以及第三介质层的折射率高低匹配，以实现光的反射率，配合合适厚度的选择，以实现对波长为440纳米-460纳米的光进行选择性的反射。\n\n[0031]在一些实施例中，钝化层还包括第四介质层，第四介质层形成于第三介质层远离阵列层的一侧，第四介质层的折射率与第三介质层的折射率的差值大于第二介质层的折射率与第一介质层的折射率的差值，以进一步增加对光的反射率。\n\n[0032]具体地，第一介质层为氮化硅，第三介质层为氧化硅层，第二介质层和第四介质层均为非晶硅层，第一介质层的厚度为2400埃-2500埃，第二介质层的厚度为235埃-255埃，第三介质层的厚度为1050埃-1080埃，第四介质层的厚度为190埃-220埃。氮化硅的折射率为1.88，氧化硅的折射率为1.4，非晶硅的折射率为3.0-4.0。\n\n[0033]氧化铟锡层104位于钝化层103远离阵列层102的一侧，氧化铟锡层104的厚度为480埃-520埃。氧化铟锡层104一方面起到用于绑定芯片的作用，另一方面选择合适的厚度配合钝化层103实现光的反射。\n\n[0034]如图1所示，钝化层103上具有通孔，通孔由内壁103a围合而成，内壁103a的坡脚的取值范围为18°-87°，例如坡脚为20°、30°、40°以及65°。相对于传统钝化层为单层，钝化层103由不同膜层组成以实现反射时，蚀刻钝化层103以形成通孔会由于钝化层由不同膜层组成，不同膜层蚀刻速率存在差异导致坡(Taper)脚过大而导致氧化铟锡层104在通孔中形成不连续的膜层，导致与氧化铟锡层104连接的芯片绑定良率降低，且会导致阵列层102中的栅极绝缘层等出现undercut(栅极绝缘层过度蚀刻)现象。内壁103a的坡脚的取值范围为18°-87°可以通过优化钝化层103的蚀刻工艺实现，也可以通过优化钝化层103的膜层组成实现。\n\n[0035]本申请还提供一种显示装置，显示装置包括液晶显示面板以及上述背光模组，或，显示装置包括显示面板，显示面板包括上述阵列基板，不同之处在于，显示面板包括上述阵列基板时，发光元件105为微型发光二极管。\n\n[0036]以下结合具体实施例和对比例对上述方案进行详述。\n\n[0037]实施例一\n\n[0038]本实施例提供一种背光模组，背光模组包括阵列基板以及钝化层，阵列基板包括基板、阵列层以及亚毫米发光二极管，阵列层设置于基板上，亚毫米发光二极管设置于阵列层上，钝化层设置于阵列层上，钝化层包括依次设置于阵列层上的氮化硅层(厚度2400埃)、非晶硅层(厚度240埃)、氧化硅层(厚度1080埃)以及非晶硅层(厚度210埃)。其中，钝化层对波长为450纳米的光的反射率为78.6％，钝化层对不同波长的光的反射率如图2所示。\n\n[0039]实施例二\n\n[0040]本实施例提供一种背光模组，本实施例背光模组与实施例一中背光模组基本相似，不同之处在于，钝化层包括依次设置于阵列层上的氮化硅层(厚度2420埃)、非晶硅层(厚度250埃)、氧化硅层(厚度为1060埃)、非晶硅层(厚度200埃)以及氧化硅层(厚度为760埃)，背光模组还包括设置于钝化层远离阵列层一侧的氧化铟锡层(厚度为500埃)。其中，钝化层以及氧化铟锡层组成的反射层对波长为450纳米的光的反射率为88％。\n\n[0041]实施例三\n\n[0042]本实施例提供一种背光模组，本实施例背光模组与实施一背光模组基本相似，不同之处在于，钝化层包括依次设置于阵列层上的氮化硅层(厚度2400埃)、氧化铟锡层(厚度为500埃)、氧化硅层(厚度为750埃)、非晶硅层(厚度为250埃)、氧化硅层(厚度为1050埃)以及非晶硅层(厚度为196埃)。其中，钝化层对波长为450纳米的反射率为78.6％，钝化层对不同波长的光的反射率如图3示。\n\n[0043]实施例四\n\n[0044]本实施例提供一种背光模组，本实施例背光模组与实施例一中背光模组基本相似，不同之处在于，钝化层包括依次设置于阵列层上的氮化硅层(厚度为658埃)、非晶硅层(厚度为170埃)以及氮化硅层(厚度1200埃)。其中，钝化层以及氧化铟锡层对波长为450纳米的光的反射率为79％。\n\n[0045]实施例五\n\n[0046]本实施例提供一种背光模组，本实施例背光模组与实施例一中背光模组基本相似，不同之处在于，钝化层包括依次设置于阵列层上的氮化硅层(厚度为650埃)、非晶硅层(厚度为178埃)以及氮化硅层(厚度600埃)，背光模组还包括设置于钝化层远离阵列层一侧的氧化铟锡层(厚度为500埃)。其中，钝化层以及氧化铟锡层对波长为450纳米的光的反射率为83.8％。本实施例钝化层以及氧化铟锡层构成的反射层对不同波长的光的反射率如图4所示。\n\n[0047]对比例一\n\n[0048]本实施例提供一种背光模组，本实施例背光模组与实施例一中背光模组基板相似，不同之处在于，钝化层包括依次设置于阵列层上的氮化硅(厚度为950埃)以及氧化硅层(1500埃)。其中，钝化层对波长为450纳米的光的反射率为68％。\n\n[0049]由实施一至实施五可知，本申请实施例钝化层为三层或三层以上介质层组成时，配合合适的厚度选择，对波长为450纳米的光的反射率大于或等于78.6％。而对比例中钝化层为两个不同折射率膜层时，钝化层对波长为450纳米的光的反射率为68％，钝化层为两个不同折射率膜层时对波长为450纳米的光的反射率小于钝化层为三个介质层对波长为450纳米的光的反射率。由实施一、实施二以及实施三可知，合适厚度的氧化铟锡层选择以及氧化铟锡的合适位置设置，才会明显增加钝化层以及氧化铟锡层构成的反射层的折射率。\n\n[0050]以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10784, 23838, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及自发光显示技术领域，具体涉及一种MicroLED显示单元及Micro LED显示面板。\n\n背景技术\n\n[0002]当今社会科技迅猛发展，手机、电脑和电视等电子产品广泛应用于生活中的各个方面。因此，液晶显示面板和OLED显示面板等电子显示屏被广泛采用。这些显示技术存在一些不足，如LCD显示的对比度，和OLED显示的稳定性等。所以Micro LED(微发光二极管)技术以其超高的显示品质和稳定性，引起了广泛研究人员的注意。\n\n[0003]但是Micro LED的驱动电流较大，传输该驱动电流的线路存在压降损耗(IRDrop)，造成显示不均一的问题。\n\n发明内容\n\n[0004]本申请提供一种Micro LED显示单元，解决的Micro LED显示不均一的问题。\n\n[0005]第一方面，本申请提供一种Micro LED显示单元，其包括驱动电路、发光器件以及光敏器件；驱动电路，用于提供驱动信号；发光器件，与驱动电路的输出端和第一电源负信号连接，用于接入驱动信号以显示；以及光敏器件，与驱动电路的输出端、发光器件的输入端以及第二电源负信号连接，用于根据发光器件的发光强度自行导通，以调节发光器件的电流。\n\n[0006]基于第一方面，在第一方面的第一种实施方式中，光敏器件为光电二极管；光电二极管的正极与驱动电路的输出端和发光器件的输入端连接；光电二极管的负极与第二负电源信号连接。\n\n[0007]基于第一方面，在第一方面的第二种实施方式中，发光器件为微发光二极管；微发光二极管的正极与驱动电路的输出端和光敏器件的输入端连接；微发光二极管的负极与第一电源负信号连接。\n\n[0008]基于第一方面，在第一方面的第三种实施方式中，驱动电路包括第一薄膜晶体管、第二薄膜晶体管、第三薄膜晶体管、第四薄膜晶体管、第五薄膜晶体管、第六薄膜晶体管、第七薄膜晶体管以及电容器；电源正信号与第一薄膜晶体管的输入端和电容器的第一端连接；第一薄膜晶体管的输出端与第二薄膜晶体管的输入端和第三薄膜晶体管的输出端连接；第三薄膜晶体管的输入端与数据信号连接；第二薄膜晶体管的输出端与第四薄膜晶体管的输入端和第五薄膜晶体管的输出端连接；第N级扫描信号与第三薄膜晶体管的控制端、第五薄膜晶体管的控制端以及第七薄膜晶体管的控制端连接；第N级发光控制信号与第一薄膜晶体管的控制端和第四薄膜晶体管的控制端连接；电容器的第二端与第二薄膜晶体管的控制端、第五薄膜晶体管的输入端以及第六薄膜晶体管的输入端连接；第六薄膜晶体管的控制端与第N-1级扫描信号连接；恒压低电位信号与第六薄膜晶体管的输出端和第七薄膜晶体管的输入端连接；第七薄膜晶体管的输出端与第四薄膜晶体管的输出端、发光器件的输入端以及光敏器件的输入端连接。\n\n[0009]基于第一方面的第三种实施方式，在第一方面的第四种实施方式中，第一薄膜晶体管、第二薄膜晶体管、第三薄膜晶体管、第四薄膜晶体管、第五薄膜晶体管、第六薄膜晶体管以及第七薄膜晶体管均为P型薄膜晶体管。\n\n[0010]基于第一方面的第三种实施方式，在第一方面的第五种实施方式中，第一薄膜晶体管、第二薄膜晶体管、第三薄膜晶体管、第四薄膜晶体管、第五薄膜晶体管、第六薄膜晶体管以及第七薄膜晶体管均为低温多晶硅薄膜晶体管、氧化物半导体薄膜晶体管或非晶硅薄膜晶体管中的一种。\n\n[0011]基于第一方面，在第一方面的第六种实施方式中，驱动信号的电压高于第二电源负信号的电压，第二电源负信号的电压高于第一电源负信号的电压。\n\n[0012]基于第一方面，在第一方面的第七种实施方式中，光敏器件为光敏电阻；光敏电阻的第一端与驱动电路的输出端和发光器件的输入端连接；光电二极管的第二端与第二负电源信号连接。\n\n[0013]第二方面，本申请提供一种Micro LED显示面板，其包括上述任一实施方式中的Micro LED显示单元，Micro LED显示单元位于Micro LED显示面板内。\n\n[0014]基于第二方面，在第二方面的第一种实施方式中，Micro LED显示单元阵列分布于Micro LED显示面板内。\n\n[0015]本申请提供的Micro LED显示单元，通过驱动电路输出的驱动信号控制发光器件进行显示，光敏器件感应发光器件的发光强度，当发光强度达到阈值时，光敏器件将自行导通，能够自动调节流经发光器件的电流值，以平衡显示的均一性。\n\n附图说明\n\n[0016]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0017]图1为本申请实施例提供的Micro LED显示单元的结构示意图。\n\n[0018]图2为图1中所示的Micro LED显示单元的电路原理图。\n\n具体实施方式\n\n[0019]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0020]如图1所示，本实施例提供了一种Micro LED显示单元，其包括驱动电路10、发光器件20以及光敏器件30；驱动电路10，用于提供驱动信号；发光器件20，与驱动电路10的输出端和第一电源负信号VSS1连接，用于接入驱动信号以显示；以及光敏器件30，与驱动电路10的输出端、发光器件20的输入端以及第二电源负信号VSS2连接，用于根据发光器件20的发光强度自行导通，以调节发光器件20的电流。\n\n[0021]具体地，驱动电路10输出的驱动信号控制发光器件20进行显示，光敏器件30感应发光器件20的发光强度，当发光强度达到阈值时，光敏器件30将自行导通，并对流经发光器件20的电流值进行分流，进而实现自动调节流经发光器件20的电流值，从而达到调节发光器件20的发光强度的目的，改善了显示的均一性。\n\n[0022]在其中一个实施例中，光敏器件30为光电二极管；光电二极管的正极与驱动电路10的输出端和发光器件20的输入端连接；光电二极管的负极与第二负电源信号连接。\n\n[0023]在其中一个实施例中，发光器件20为微发光二极管；微发光二极管的正极与驱动电路10的输出端和光敏器件30的输入端连接；微发光二极管的负极与第一电源负信号VSS1连接。\n\n[0024]需要说明的是，本实施例可以但不限于为微发光二极管，也可以为其他发光器件20，同样可以起到调节发光强度的目的。\n\n[0025]如图2所示，在其中一个实施例中，驱动电路10包括第一薄膜晶体管T1、第二薄膜晶体管T2、第三薄膜晶体管T3、第四薄膜晶体管T4、第五薄膜晶体管T5、第六薄膜晶体管T6、第七薄膜晶体管T7以及电容器C1；电源正信号VDD与第一薄膜晶体管T1的输入端和电容器C1的第一端连接；第一薄膜晶体管T1的输出端与第二薄膜晶体管T2的输入端和第三薄膜晶体管T3的输出端连接；第三薄膜晶体管T3的输入端与数据信号DATA连接；第二薄膜晶体管T2的输出端与第四薄膜晶体管T4的输入端和第五薄膜晶体管T5的输出端连接；第N级扫描信号SCAN(N)与第三薄膜晶体管T3的控制端、第五薄膜晶体管T5的控制端以及第七薄膜晶体管T7的控制端连接；第N级发光控制信号EM(N)与第一薄膜晶体管T1的控制端和第四薄膜晶体管T4的控制端连接；电容器C1的第二端与第二薄膜晶体管T2的控制端、第五薄膜晶体管T5的输入端以及第六薄膜晶体管T6的输入端连接；第六薄膜晶体管T6的控制端与第N-1级扫描信号SCAN(N-1)连接；恒压低电位信号VI与第六薄膜晶体管T6的输出端和第七薄膜晶体管T7的输入端连接；第七薄膜晶体管T7的输出端与第四薄膜晶体管T4的输出端、发光器件20的输入端以及光敏器件30的输入端连接。\n\n[0026]具体地，第N-1级扫描信号SCAN(N-1)为低电平信号，第六薄膜晶体管T6导通，以拉低电容器C1的第二端电压，电容器C1开始充电。接着，第N级扫描信号SCAN(N)为低电平信号，第三薄膜晶体管T3、第五薄膜晶体管T5以及第七薄膜晶体管T7均导通，第二薄膜晶体管T2的栅极与漏极短接，第二薄膜晶体管T2的栅极电压的绝对值大于其阈值电压的绝对值，此时，第二薄膜晶体管T2相当于二极管，第二薄膜晶体管T2打开，直至第二薄膜晶体管T2的栅极电压等于数据信号DATA的电压与其阈值电压的绝对值之差时，第二薄膜晶体管T2截止；同时，第七薄膜晶体管T7的导通复位了驱动信号的电压。最后，发光控制信号为低电平信号，第一薄膜晶体管T1和第四薄膜晶体管T4导通，此时，输出驱动信号。\n\n[0027]需要说明的是，本实施例提供的驱动电路10可以但不限于为该电路拓扑结构，其也可以是其他电路拓扑结构型的驱动电路10。\n\n[0028]在其中一个实施例中，第一薄膜晶体管T1、第二薄膜晶体管T2、第三薄膜晶体管T3、第四薄膜晶体管T4、第五薄膜晶体管T5、第六薄膜晶体管T6以及第七薄膜晶体管T7均为P型薄膜晶体管。\n\n[0029]在其中一个实施例中，第一薄膜晶体管T1、第二薄膜晶体管T2、第三薄膜晶体管T3、第四薄膜晶体管T4、第五薄膜晶体管T5、第六薄膜晶体管T6以及第七薄膜晶体管T7均为低温多晶硅薄膜晶体管、氧化物半导体薄膜晶体管或非晶硅薄膜晶体管中的一种。\n\n[0030]在其中一个实施例中，驱动信号的电压高于第二电源负信号VSS2的电压，第二电源负信号VSS2的电压高于第一电源负信号VSS1的电压。\n\n[0031]具体地，调整第二电源负信号VSS2的电压可以改善驱动信号的电压，可以对驱动信号的电压进行补偿，以平衡显示的发光均一性。\n\n[0032]在其中一个实施例中，光敏器件30为光敏电阻；光敏电阻的第一端与驱动电路10的输出端和发光器件20的输入端连接；光电二极管的第二端与第二负电源信号连接。\n\n[0033]在其中一个实施例中，本申请提供一种Micro LED显示面板，其包括上述任一实施方式中的Micro LED显示单元，Micro LED显示单元位于Micro LED显示面板内。\n\n[0034]在其中一个实施例中，Micro LED显示单元阵列分布于Micro LED显示面板内。\n\n[0035]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0036]以上对本申请实施例所提供的Micro LED显示单元进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及自发光显示技术领域，具体涉及一种MicroLED显示单元及Micro LED显示面板。\n\n背景技术\n\n[0002]当今社会科技迅猛发展，手机、电脑和电视等电子产品广泛应用于生活中的各个方面。因此，液晶显示面板和OLED显示面板等电子显示屏被广泛采用。这些显示技术存在一些不足，如LCD显示的对比度，和OLED显示的稳定性等。所以Micro LED(微发光二极管)技术以其超高的显示品质和稳定性，引起了广泛研究人员的注意。\n\n[0003]但是Micro LED的驱动电流较大，传输该驱动电流的线路存在压降损耗(IRDrop)，造成显示不均一的问题。\n\n发明内容\n\n[0004]本申请提供一种Micro LED显示单元，解决的Micro LED显示不均一的问题。\n\n[0005]第一方面，本申请提供一种Micro LED显示单元，其包括驱动电路、发光器件以及光敏器件；驱动电路，用于提供驱动信号；发光器件，与驱动电路的输出端和第一电源负信号连接，用于接入驱动信号以显示；以及光敏器件，与驱动电路的输出端、发光器件的输入端以及第二电源负信号连接，用于根据发光器件的发光强度自行导通，以调节发光器件的电流。\n\n[0006]基于第一方面，在第一方面的第一种实施方式中，光敏器件为光电二极管；光电二极管的正极与驱动电路的输出端和发光器件的输入端连接；光电二极管的负极与第二负电源信号连接。\n\n[0007]基于第一方面，在第一方面的第二种实施方式中，发光器件为微发光二极管；微发光二极管的正极与驱动电路的输出端和光敏器件的输入端连接；微发光二极管的负极与第一电源负信号连接。\n\n[0008]基于第一方面，在第一方面的第三种实施方式中，驱动电路包括第一薄膜晶体管、第二薄膜晶体管、第三薄膜晶体管、第四薄膜晶体管、第五薄膜晶体管、第六薄膜晶体管、第七薄膜晶体管以及电容器；电源正信号与第一薄膜晶体管的输入端和电容器的第一端连接；第一薄膜晶体管的输出端与第二薄膜晶体管的输入端和第三薄膜晶体管的输出端连接；第三薄膜晶体管的输入端与数据信号连接；第二薄膜晶体管的输出端与第四薄膜晶体管的输入端和第五薄膜晶体管的输出端连接；第N级扫描信号与第三薄膜晶体管的控制端、第五薄膜晶体管的控制端以及第七薄膜晶体管的控制端连接；第N级发光控制信号与第一薄膜晶体管的控制端和第四薄膜晶体管的控制端连接；电容器的第二端与第二薄膜晶体管的控制端、第五薄膜晶体管的输入端以及第六薄膜晶体管的输入端连接；第六薄膜晶体管的控制端与第N-1级扫描信号连接；恒压低电位信号与第六薄膜晶体管的输出端和第七薄膜晶体管的输入端连接；第七薄膜晶体管的输出端与第四薄膜晶体管的输出端、发光器件的输入端以及光敏器件的输入端连接。\n\n[0009]基于第一方面的第三种实施方式，在第一方面的第四种实施方式中，第一薄膜晶体管、第二薄膜晶体管、第三薄膜晶体管、第四薄膜晶体管、第五薄膜晶体管、第六薄膜晶体管以及第七薄膜晶体管均为P型薄膜晶体管。\n\n[0010]基于第一方面的第三种实施方式，在第一方面的第五种实施方式中，第一薄膜晶体管、第二薄膜晶体管、第三薄膜晶体管、第四薄膜晶体管、第五薄膜晶体管、第六薄膜晶体管以及第七薄膜晶体管均为低温多晶硅薄膜晶体管、氧化物半导体薄膜晶体管或非晶硅薄膜晶体管中的一种。\n\n[0011]基于第一方面，在第一方面的第六种实施方式中，驱动信号的电压高于第二电源负信号的电压，第二电源负信号的电压高于第一电源负信号的电压。\n\n[0012]基于第一方面，在第一方面的第七种实施方式中，光敏器件为光敏电阻；光敏电阻的第一端与驱动电路的输出端和发光器件的输入端连接；光电二极管的第二端与第二负电源信号连接。\n\n[0013]第二方面，本申请提供一种Micro LED显示面板，其包括上述任一实施方式中的Micro LED显示单元，Micro LED显示单元位于Micro LED显示面板内。\n\n[0014]基于第二方面，在第二方面的第一种实施方式中，Micro LED显示单元阵列分布于Micro LED显示面板内。\n\n[0015]本申请提供的Micro LED显示单元，通过驱动电路输出的驱动信号控制发光器件进行显示，光敏器件感应发光器件的发光强度，当发光强度达到阈值时，光敏器件将自行导通，能够自动调节流经发光器件的电流值，以平衡显示的均一性。\n\n附图说明\n\n[0016]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0017]图1为本申请实施例提供的Micro LED显示单元的结构示意图。\n\n[0018]图2为图1中所示的Micro LED显示单元的电路原理图。\n\n具体实施方式\n\n[0019]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0020]如图1所示，本实施例提供了一种Micro LED显示单元，其包括驱动电路10、发光器件20以及光敏器件30；驱动电路10，用于提供驱动信号；发光器件20，与驱动电路10的输出端和第一电源负信号VSS1连接，用于接入驱动信号以显示；以及光敏器件30，与驱动电路10的输出端、发光器件20的输入端以及第二电源负信号VSS2连接，用于根据发光器件20的发光强度自行导通，以调节发光器件20的电流。\n\n[0021]具体地，驱动电路10输出的驱动信号控制发光器件20进行显示，光敏器件30感应发光器件20的发光强度，当发光强度达到阈值时，光敏器件30将自行导通，并对流经发光器件20的电流值进行分流，进而实现自动调节流经发光器件20的电流值，从而达到调节发光器件20的发光强度的目的，改善了显示的均一性。\n\n[0022]在其中一个实施例中，光敏器件30为光电二极管；光电二极管的正极与驱动电路10的输出端和发光器件20的输入端连接；光电二极管的负极与第二负电源信号连接。\n\n[0023]在其中一个实施例中，发光器件20为微发光二极管；微发光二极管的正极与驱动电路10的输出端和光敏器件30的输入端连接；微发光二极管的负极与第一电源负信号VSS1连接。\n\n[0024]需要说明的是，本实施例可以但不限于为微发光二极管，也可以为其他发光器件20，同样可以起到调节发光强度的目的。\n\n[0025]如图2所示，在其中一个实施例中，驱动电路10包括第一薄膜晶体管T1、第二薄膜晶体管T2、第三薄膜晶体管T3、第四薄膜晶体管T4、第五薄膜晶体管T5、第六薄膜晶体管T6、第七薄膜晶体管T7以及电容器C1；电源正信号VDD与第一薄膜晶体管T1的输入端和电容器C1的第一端连接；第一薄膜晶体管T1的输出端与第二薄膜晶体管T2的输入端和第三薄膜晶体管T3的输出端连接；第三薄膜晶体管T3的输入端与数据信号DATA连接；第二薄膜晶体管T2的输出端与第四薄膜晶体管T4的输入端和第五薄膜晶体管T5的输出端连接；第N级扫描信号SCAN(N)与第三薄膜晶体管T3的控制端、第五薄膜晶体管T5的控制端以及第七薄膜晶体管T7的控制端连接；第N级发光控制信号EM(N)与第一薄膜晶体管T1的控制端和第四薄膜晶体管T4的控制端连接；电容器C1的第二端与第二薄膜晶体管T2的控制端、第五薄膜晶体管T5的输入端以及第六薄膜晶体管T6的输入端连接；第六薄膜晶体管T6的控制端与第N-1级扫描信号SCAN(N-1)连接；恒压低电位信号VI与第六薄膜晶体管T6的输出端和第七薄膜晶体管T7的输入端连接；第七薄膜晶体管T7的输出端与第四薄膜晶体管T4的输出端、发光器件20的输入端以及光敏器件30的输入端连接。\n\n[0026]具体地，第N-1级扫描信号SCAN(N-1)为低电平信号，第六薄膜晶体管T6导通，以拉低电容器C1的第二端电压，电容器C1开始充电。接着，第N级扫描信号SCAN(N)为低电平信号，第三薄膜晶体管T3、第五薄膜晶体管T5以及第七薄膜晶体管T7均导通，第二薄膜晶体管T2的栅极与漏极短接，第二薄膜晶体管T2的栅极电压的绝对值大于其阈值电压的绝对值，此时，第二薄膜晶体管T2相当于二极管，第二薄膜晶体管T2打开，直至第二薄膜晶体管T2的栅极电压等于数据信号DATA的电压与其阈值电压的绝对值之差时，第二薄膜晶体管T2截止；同时，第七薄膜晶体管T7的导通复位了驱动信号的电压。最后，发光控制信号为低电平信号，第一薄膜晶体管T1和第四薄膜晶体管T4导通，此时，输出驱动信号。\n\n[0027]需要说明的是，本实施例提供的驱动电路10可以但不限于为该电路拓扑结构，其也可以是其他电路拓扑结构型的驱动电路10。\n\n[0028]在其中一个实施例中，第一薄膜晶体管T1、第二薄膜晶体管T2、第三薄膜晶体管T3、第四薄膜晶体管T4、第五薄膜晶体管T5、第六薄膜晶体管T6以及第七薄膜晶体管T7均为P型薄膜晶体管。\n\n[0029]在其中一个实施例中，第一薄膜晶体管T1、第二薄膜晶体管T2、第三薄膜晶体管T3、第四薄膜晶体管T4、第五薄膜晶体管T5、第六薄膜晶体管T6以及第七薄膜晶体管T7均为低温多晶硅薄膜晶体管、氧化物半导体薄膜晶体管或非晶硅薄膜晶体管中的一种。\n\n[0030]在其中一个实施例中，驱动信号的电压高于第二电源负信号VSS2的电压，第二电源负信号VSS2的电压高于第一电源负信号VSS1的电压。\n\n[0031]具体地，调整第二电源负信号VSS2的电压可以改善驱动信号的电压，可以对驱动信号的电压进行补偿，以平衡显示的发光均一性。\n\n[0032]在其中一个实施例中，光敏器件30为光敏电阻；光敏电阻的第一端与驱动电路10的输出端和发光器件20的输入端连接；光电二极管的第二端与第二负电源信号连接。\n\n[0033]在其中一个实施例中，本申请提供一种Micro LED显示面板，其包括上述任一实施方式中的Micro LED显示单元，Micro LED显示单元位于Micro LED显示面板内。\n\n[0034]在其中一个实施例中，Micro LED显示单元阵列分布于Micro LED显示面板内。\n\n[0035]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0036]以上对本申请实施例所提供的Micro LED显示单元进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10785, 23839, '技术领域\n\n[0001]本申请涉及显示领域，特别是涉及一种micro LED阵列基板的修补装置以及microLED阵列基板的修补方法。\n\n背景技术\n\n[0002]Micro LED显示装置应用于大尺寸显示面板需要进行去掉LED的蓝宝石基板或是GaAs基板，然后再通过巨量转移的方法把micro LED转移至抗拉伸的有机基材上，要进行快速的巨量选择性的转移，传统的结构性转移头不仅制作复杂，而且目前的结构性转移头只能进行固定位置的micro LED阵列基板的转移，检测后的micro LED阵列基板中实际存在缺陷所述Micro LED发光二极管的位置不准确。如何对巨量转移后micro LED阵列基板所存在缺陷的进行定位、拔除以及重新补放是目前实现最终良率提升和降低成本的关键。\n\n[0003]因此，现有的micro LED阵列基板的技术中，还存在着micro LED阵列基板的制作过程一般采用传统的micro LED基板转移方法，但转移前无法保证所述micro LED阵列基板上所有的所述micro LED发光二极管均是正常无缺陷的；对存在缺陷的所述Micro LED发光二极管位置的检测也不够准确；因此，如何对micro LED阵列基板巨量转移后存在缺陷的所述Micro LED发光二极管的位置进行定位、拔除以及重新补放的问题，急需改进。\n\n发明内容\n\n[0004]本申请涉及一种micro LED阵列基板的修补装置以及micro LED阵列基板的修补方法，用于解决现有技术中存在着micro LED阵列基板的制作过程一般采用传统的microLED基板转移方法，但转移前无法保证所述micro LED阵列基板上所有的所述micro LED发光二极管均是正常无缺陷的；对存在缺陷的所述Micro LED发光二极管位置的检测也不够准确；因此，如何对micro LED阵列基板巨量转移后存在缺陷的所述Micro LED发光二极管的位置进行定位、拔除以及重新补放的问题。\n\n[0005]为解决上述问题，本申请提供的技术方案如下：\n\n[0006]本申请提供的一种Micro LED阵列基板的修补装置，所述micro LED阵列基板的修补装置包括：Micro LED阵列基板、测试电路、光学测量探测头以及激光转移头；\n\n[0007]所述测试电路包括设置在所述Micro LED阵列基板一侧的绝缘凸台层，分别设置在所述绝缘凸台层两侧，并与所述Micro LED阵列基板电性连接的两个测试头电极；以及设置在两个所述测试头电极背离所述绝缘层凸台一侧的Micro LED发光二极管，两个所述测试头电极分别电性连接所述Micro LED发光二极管的正电极和负电极。\n\n[0008]根据本申请提供的一种实施例，所述测试头电极分为：第一测试头电极和第二测试头电极；所述第一测试头电极的一端电性连接所述Micro LED发光二极管的正电极，所述第一测试头电极的另一端电性连接所述第一金属层的输出端，所述第二测试头电极的一端电性连接所述Micro LED发光二极管的负电极，所述第二测试头电极的另一端电性连接所述Micro LED阵列基板的公共电极层。\n\n[0009]根据本申请提供的一种实施例，所述Micro LED发光二极管的控制端电性连接一电容，所述Micro LED发光二极管的输出端电性连接所述电容的另一端，所述阵列基板的公共电极。\n\n[0010]根据本申请提供的一种实施例，所述开关晶体管的控制端电性连接扫描线，所述开关晶体管的输入端电性连接数据线，所述开关管的输出端电性连接所述Micro LED发光二极管的控制端。\n\n[0011]根据本申请提供的一种实施例，所述光学测量探测头为电荷耦合器件光学测量探测头。\n\n[0012]根据本申请提供的一种实施例，所述Micro LED阵列基板的修补装置还包括一背板。\n\n[0013]根据本申请提供的一种实施例，所述背板的一侧设置有坐标值，所述背板的一侧设置有坐标值。\n\n[0014]根据本申请提供的一种实施例，所述背板包含坐标值的一侧背离所述Micro LED发光二极管的一侧进行设置。\n\n[0015]根据本申请提供的一种实施例，所述背板的长、宽大于等于所述Micro LED阵列基板的长、宽。\n\n[0016]本申请提供一种Micro LED阵列基板的修补方法，采用上述前九项任一项所述的Micro LED阵列基板的修补装置，该方法包括：\n\n[0017]S10，提供Micro LED阵列基板、光学测量探测头以及背板；\n\n[0018]S20，将所述光学测量探测头的电极与所述Micro LED阵列基板的第一测试头电极和第二测试头电极电性连接；\n\n[0019]S30，将所述背板平行于所述Micro LED阵列基板靠近所述Micro LED发光二极管的一侧；\n\n[0020]S40，导通所述光学测量探测头，所有的所述Micro LED发光二极管投影到所述背板上，若所述Micro LED发光二极管正常则所述背板的对应位置点亮；若所述Micro LED发光二极管存在缺陷，则所述背板的对应位置不亮；\n\n[0021]S50，若所述Micro LED发光二极管存在缺陷由背板显示出存在缺陷的所述MicroLED发光二极管的坐标值，采用激光转移头先将存在缺陷的所述Micro LED发光二极管四周的光敏胶软化，再取出存在缺陷的所述Micro LED发光二极管替换成正常的所述Micro LED发光二极管。\n\n[0022]与现有技术相比，本申请提供的一种micro LED阵列基板的修补装置以及microLED阵列基板的修补方法具有的有益效果为：\n\n[0023]1.首先，本申请所提供的micro LED阵列基板，所述micro LED阵列基板包括：micro LED基板和测试电路；所述测试电路包括设置在所述micro LED基板一侧的绝缘凸台层，分别设置在所述绝缘凸台层两侧，并与所述micro LED基板电性连接的两个测试头电极；以及设置在两个所述测试头电极背离所述绝缘层凸台一侧的Micro LED发光二极管，两个所述测试头电极分别电性连接所述Micro LED发光二极管的正电极和负电极，在检测时，分别将所述Micro LED发光二极管的输入端电性连接电源输入端，所述Micro LED发光二极管的控制端电性连接开关晶体管的输出端，所述Micro LED发光二极管的输出端接地，以此可以检测所述Micro LED阵列基板上各个所述Micro LED发光二极管是否存在缺陷，制作工艺简单，也节约了成本；\n\n[0024]2.其次，本申请所提供的micro LED阵列基板、显示面板以及micro LED阵列基板的修补方法，在进行检测时配合电荷耦合器件使用，一次性可以对整面micro LED阵列基板上的多个所述Micro LED发光二极管进行检测，并找出存在缺陷的所述Micro LED发光二极管的坐标位置，更高效、精准又便捷地找出了存在缺陷的所述Micro LED发光二极管的位置；\n\n[0025]3.进一步地，找到存在缺陷的所述Micro LED发光二极管的准确位置后，采用激光转移头先将存在缺陷的所述Micro LED发光二极管周围的光敏胶软化，再将存在缺陷的所述Micro LED发光二极管替换成正常的所述Micro LED发光二极管，即简单高效地修补了所述micro LED阵列基板中存在缺陷的所述micro LED发光二极管，提升了所述micro LED阵列基板的修补效率和良率。\n\n附图说明\n\n[0026]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0027]图1为本申请实施例提供的Micro LED阵列基板修补装置的第一结构示意图。\n\n[0028]图2为本申请实施例提供的Micro LED阵列基板上的测试电路图。\n\n[0029]图3为本申请实施例提供的Micro LED阵列基板修补装置的第二结构示意图。\n\n[0030]图4为本申请实施例提供的检测后所述背板的结构示意图。\n\n[0031]图5为本申请实施例提供的Micro LED阵列基板修补装置的第三结构示意图。\n\n[0032]图6为本申请实施例提供的修补后所述背板的结构示意图。\n\n[0033]图7为本申请实施例提供的Micro LED阵列基板修补方法的流程示意图。\n\n具体实施方式\n\n[0034]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0035]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0036]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0037]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0038]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0039]本申请提供一种micro LED阵列基板的修补装置以及micro LED阵列基板的修补方法，具体参阅图1-图7。\n\n[0040]现有的micro LED阵列基板的制作过程一般采用传统的micro LED基板转移方法，但转移前无法保证所述micro LED阵列基板上所有的所述micro LED发光二极管均是正常无缺陷的；而且目前的结构性转移头只能进行固定位置的micro LED阵列基板的转移，对存在缺陷的所述micro LED阵列基板的位置的检测也是不准确的，因此，如何对micro LED阵列基板巨量转移后存在缺陷的所述Micro LED发光二极管的位置进行定位、拔除以及重新补放的问题，急需改进。因此，本申请特提出一种micro LED阵列基板的修补装置以及microLED阵列基板的修补方法。\n\n[0041]参阅图1、图3和图5，本申请提供的一种Micro LED阵列基板的修补装置，所述micro LED阵列基板的修补装置包括：Micro LED阵列基板1、测试电路2、光学测量探测头3以及激光转移头4；\n\n[0042]所述测试电路2包括设置在所述Micro LED阵列基板一侧的绝缘凸台层223，分别设置在所述绝缘凸台层223两侧，并与所述Micro LED阵列基板电性连接的两个测试头电极；以及设置在两个所述测试头电极背离所述绝缘层凸台223一侧的Micro LED发光二极管21，两个所述测试头电极分别电性连接所述Micro LED发光二极管21的正电极211和负电极212，以便与所述光学测量探测头3连接进行检测。\n\n[0043]在本申请的一种实施例中，所述测试头电极分为：第一测试头电极221和第二测试头电极222；所述第一测试头电极221的一端电性连接所述Micro LED发光二极管21的正电极，所述第一测试头电极221的另一端电性连接所述第一金属层14的输出端，所述第二测试头电极222的一端电性连接所述Micro LED发光二极管21的负电极212，所述第二测试头电极222的另一端电性连接所述Micro LED阵列基板的公共电极层183。\n\n[0044]参阅图2，在本申请的一种实施例中，所述Micro LED发光二极管21的控制端电性连接一电容C，所述Micro LED发光二极管21的输出端电性连接所述电容C的另一端，所述Micro LED阵列基板的公共电极183。进一步地，所述电容C为存储电容，当所述开关晶体管T1接交流电压导通后，所述电容C开始充电，所述Micro LED发光二极管21也导通；当所述开关晶体管T1关闭或是接直流电压时，所述电容C开始放电，供给所述Micro LED发光二极管21，使得所述Micro LED发光二极管继续导通。\n\n[0045]在本申请的一种实施例中，所述开关晶体管T1的控制端电性连接扫描线，所述开关晶体管T1的输入端电性连接数据线，所述开关晶体管T1的输出端电性连接所述MicroLED发光二极管21的控制端。\n\n[0046]在本申请的一种实施例中，所述Micro LED阵列基板的修补装置中的所述光学测量探测头3用于捕捉整面所述Micro LED阵列基板上所有的所述Micro LED发光二极管21，观察是否存在有缺陷的所述Micro LED发光二极管21。\n\n[0047]在本申请的一种实施例中，所述光学测量探测头3为电荷耦合器件(CCD，charge-coupled device)光学测量探测头，电荷耦合器件是一种用于探测光的硅片，由时钟脉冲电压来产生和控制半导体势阱的变化，实现存储和传递电荷信息的固态电子器件。此处采用电荷耦合器件光学测量探测头可以更精准的检测出整个所述Micro LED阵列基板上可以正常发光的所述Micro LED发光二极管21，因而即可找出存在缺陷的所述Micro LED发光二极管21。\n\n[0048]在本申请的一种实施例中，所述Micro LED阵列基板的修补装置还包括一背板5。进一步地，所述背板5的一侧设置有坐标值，所述背板5包含坐标值的一侧背离所述MicroLED发光二极管21的一侧进行设置。所述背板5用于配合所述电荷耦合器件光学测量探测头3进行使用，检测者可以直接从所述背板5上读取出存在缺陷的所述Micro LED发光二极管21的坐标值，进而进行修补。\n\n[0049]在本申请的一种实施例中，所述背板5的长、宽大于等于所述Micro LED阵列基板的长、宽，只有当所述背板5的长、宽大于等于所述Micro LED阵列基板的长、宽时，所述Micro LED阵列基板上的所有的所述Micro LED发光二极管21的坐标值才能完全覆盖在所述背板5上，便于后续所述激光转移头4在去除存在缺陷的所述Micro LED发光二极管21时进行定位。\n\n[0050]进一步地，所述背板5选用透光率较高的玻璃材质，即透明材质，以保证当电压较小，所述Micro LED阵列基板的所述Micro LED发光二极管发出的光线较弱时，仍然能够清楚的看出整个所述Micro LED阵列基板上点亮的所述Micro LED发光二极管21。参阅图4，检测到所述背板5上存在缺陷的所述Micro LED发光二极管21的坐标52和正常的所述MicroLED发光二极管21的坐标51。\n\n[0051]进一步地，参阅图5，所述激光转移头4与一般的结构性转移头最大的区别就是所述激光转移头4上包含激光，可以在去除所述激光转移头4之前，先用激光照射，软化存在缺陷的所述Micro LED发光二极管21四周的光敏胶23，再将存在缺陷的所述Micro LED发光二极管21移出，可以更便捷的取出存在缺陷的所述Micro LED发光二极管21，节约成本，也提升了所述Micro LED阵列基板的良率。参阅图6，检测且替换完成后的所述所述Micro LED阵列基板上，所有的所述所述Micro LED发光二极管21的坐标全部为正常的所述Micro LED发光二极管21的坐标51。\n\n[0052]进一步地，所述Micro LED阵列基板还包括：衬底基板11、第一绝缘层12、遮光层13、第一金属层14、第二绝缘层15、第三过孔151、栅绝缘层16、第二金属层17、第三绝缘层18，设置在所述第三绝缘层18上的第一过孔181、第二过孔182和公共电极层183。所述衬底基板11可以是玻璃基板或是树脂基板。\n\n[0053]参阅图7，本申请提供一种Micro LED阵列基板的修补方法，采用上述所述的MicroLED阵列基板的修补装置，该方法包括：\n\n[0054]S10，提供设置有光学测试电路的Micro LED阵列基板1、光学测量探测头3以及激光转移头4；组成完整的Micro LED阵列基板的修补装置，该修补装置既可以实现对所述Micro LED阵列基板上存在缺陷的所述Micro LED发光二极管21的坐标位置进行检测，还可以先将存在缺陷的所述Micro LED阵列基板上的存在缺陷的所述Micro LED发光二极管21四周的光敏胶23进行软化，再取出存在缺陷的所述Micro LED发光二极管21替换成正常的所述Micro LED发光二极管21；\n\n[0055]S20，将所述光学测量探测头3的电极与所述Micro LED阵列基板的第一测试头电极221和第二测试头电极222电性连接；建立所述光学测量探测头3与所述Micro LED阵列基板之间的电路关系，当导通所有的所述Micro LED阵列基板上的所述Micro LED发光二极管21时，可方便查找是否存在有缺陷的所述Micro LED发光二极管21；\n\n[0056]S30，将所述背板5平行于所述Micro LED阵列基板靠近所述Micro LED发光二极管21的一侧；便有检测者可以直观的从所述背板5上观察出是否存在有缺陷的所述Micro LED发光二极管21以及存在缺陷的所述Micro LED发光二极管21的坐标值；\n\n[0057]S40，导通所述光学测量探测头3，所有的所述Micro LED发光二极管21投影到所述背板5上，若所述Micro LED发光二极管21正常则所述背板5的对应位置点亮；若所述MicroLED发光二极管21存在缺陷，则所述背板5的对应位置不亮；导通所述光学测量探测头3，所述光学测量探测头3与所有的所述Micro LED发光二极管21连通，根据各个所述Micro LED发光二极管21是否能够被点亮即可确定各个所述Micro LED发光二极管21是否存在缺陷；\n\n[0058]S50，若所述Micro LED发光二极管21存在缺陷由背板显示出存在缺陷的所述Micro LED发光二极管21的坐标值，采用激光转移头4先将存在缺陷的所述Micro LED发光二极管21四周的光敏胶23软化，再取出存在缺陷的所述Micro LED发光二极管21替换成正常的所述Micro LED发光二极管21。采用激光软化存在缺陷的所述Micro LED发光二极管21四周的光敏胶23，大大的降低了取出存在缺陷的所述Micro LED发光二极管21的难度，也节省了作业时间和成本，提高了所述Micro LED阵列基板的修补良率。\n\n[0059]进一步地，所述开关晶体管T1可以是薄膜晶体管或是场效应晶体管，所述开关晶体管T1的控制端即为栅极，在一种实施例中，所述开关晶体管T1的输入端即为源极，所述开关晶体管T1的输出端即为漏极；在另一种实施例中，所述开关晶体管T1的输入端即为漏极，所述开关晶体管T1的输出端即为源极。当给控制端高电平时，源极和漏极通过半导体层连接，此时所述开关晶体管T1处于开启状态。\n\n[0060]因此，本申请提供的一种micro LED阵列基板的修补装置以及micro LED阵列基板的修补方法具有的有益效果为：首先，本申请所提供的micro LED阵列基板，所述micro LED阵列基板包括：micro LED基板和测试电路；所述测试电路包括设置在所述micro LED基板一侧的绝缘凸台层，分别设置在所述绝缘凸台层两侧，并与所述micro LED基板电性连接的两个测试头电极；以及设置在两个所述测试头电极背离所述绝缘层凸台一侧的Micro LED发光二极管，两个所述测试头电极分别电性连接所述Micro LED发光二极管的正电极和负电极，在检测时，分别将所述Micro LED发光二极管的输入端电性连接电源输入端，所述Micro LED发光二极管的控制端电性连接开关晶体管的输出端，所述Micro LED发光二极管的输出端接地，以此可以检测所述Micro LED阵列基板上各个所述Micro LED发光二极管是否存在缺陷，制作工艺简单，也节约了成本；其次，本申请所提供的micro LED阵列基板、显示面板以及micro LED阵列基板的修补方法，在进行检测时配合电荷耦合器件使用，一次性可以对整面micro LED阵列基板上的多个所述Micro LED发光二极管进行检测，并找出存在缺陷的所述Micro LED发光二极管的坐标位置，更高效、精准又便捷地找出了存在缺陷的所述Micro LED发光二极管的位置；进一步地，找到存在缺陷的所述Micro LED发光二极管的准确位置后，采用激光转移头先将存在缺陷的所述Micro LED发光二极管周围的光敏胶软化，再将存在缺陷的所述Micro LED发光二极管替换成正常的所述Micro LED发光二极管，即简单高效地修补了所述micro LED阵列基板中存在缺陷的所述micro LED发光二极管，提升了所述micro LED阵列基板的修补效率和良率。\n\n[0061]以上对本申请实施例所提供的一种micro LED阵列基板的检测装置以及microLED阵列基板的检测方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示领域，特别是涉及一种micro LED阵列基板的修补装置以及microLED阵列基板的修补方法。\n\n背景技术\n\n[0002]Micro LED显示装置应用于大尺寸显示面板需要进行去掉LED的蓝宝石基板或是GaAs基板，然后再通过巨量转移的方法把micro LED转移至抗拉伸的有机基材上，要进行快速的巨量选择性的转移，传统的结构性转移头不仅制作复杂，而且目前的结构性转移头只能进行固定位置的micro LED阵列基板的转移，检测后的micro LED阵列基板中实际存在缺陷所述Micro LED发光二极管的位置不准确。如何对巨量转移后micro LED阵列基板所存在缺陷的进行定位、拔除以及重新补放是目前实现最终良率提升和降低成本的关键。\n\n[0003]因此，现有的micro LED阵列基板的技术中，还存在着micro LED阵列基板的制作过程一般采用传统的micro LED基板转移方法，但转移前无法保证所述micro LED阵列基板上所有的所述micro LED发光二极管均是正常无缺陷的；对存在缺陷的所述Micro LED发光二极管位置的检测也不够准确；因此，如何对micro LED阵列基板巨量转移后存在缺陷的所述Micro LED发光二极管的位置进行定位、拔除以及重新补放的问题，急需改进。\n\n发明内容\n\n[0004]本申请涉及一种micro LED阵列基板的修补装置以及micro LED阵列基板的修补方法，用于解决现有技术中存在着micro LED阵列基板的制作过程一般采用传统的microLED基板转移方法，但转移前无法保证所述micro LED阵列基板上所有的所述micro LED发光二极管均是正常无缺陷的；对存在缺陷的所述Micro LED发光二极管位置的检测也不够准确；因此，如何对micro LED阵列基板巨量转移后存在缺陷的所述Micro LED发光二极管的位置进行定位、拔除以及重新补放的问题。\n\n[0005]为解决上述问题，本申请提供的技术方案如下：\n\n[0006]本申请提供的一种Micro LED阵列基板的修补装置，所述micro LED阵列基板的修补装置包括：Micro LED阵列基板、测试电路、光学测量探测头以及激光转移头；\n\n[0007]所述测试电路包括设置在所述Micro LED阵列基板一侧的绝缘凸台层，分别设置在所述绝缘凸台层两侧，并与所述Micro LED阵列基板电性连接的两个测试头电极；以及设置在两个所述测试头电极背离所述绝缘层凸台一侧的Micro LED发光二极管，两个所述测试头电极分别电性连接所述Micro LED发光二极管的正电极和负电极。\n\n[0008]根据本申请提供的一种实施例，所述测试头电极分为：第一测试头电极和第二测试头电极；所述第一测试头电极的一端电性连接所述Micro LED发光二极管的正电极，所述第一测试头电极的另一端电性连接所述第一金属层的输出端，所述第二测试头电极的一端电性连接所述Micro LED发光二极管的负电极，所述第二测试头电极的另一端电性连接所述Micro LED阵列基板的公共电极层。\n\n[0009]根据本申请提供的一种实施例，所述Micro LED发光二极管的控制端电性连接一电容，所述Micro LED发光二极管的输出端电性连接所述电容的另一端，所述阵列基板的公共电极。\n\n[0010]根据本申请提供的一种实施例，所述开关晶体管的控制端电性连接扫描线，所述开关晶体管的输入端电性连接数据线，所述开关管的输出端电性连接所述Micro LED发光二极管的控制端。\n\n[0011]根据本申请提供的一种实施例，所述光学测量探测头为电荷耦合器件光学测量探测头。\n\n[0012]根据本申请提供的一种实施例，所述Micro LED阵列基板的修补装置还包括一背板。\n\n[0013]根据本申请提供的一种实施例，所述背板的一侧设置有坐标值，所述背板的一侧设置有坐标值。\n\n[0014]根据本申请提供的一种实施例，所述背板包含坐标值的一侧背离所述Micro LED发光二极管的一侧进行设置。\n\n[0015]根据本申请提供的一种实施例，所述背板的长、宽大于等于所述Micro LED阵列基板的长、宽。\n\n[0016]本申请提供一种Micro LED阵列基板的修补方法，采用上述前九项任一项所述的Micro LED阵列基板的修补装置，该方法包括：\n\n[0017]S10，提供Micro LED阵列基板、光学测量探测头以及背板；\n\n[0018]S20，将所述光学测量探测头的电极与所述Micro LED阵列基板的第一测试头电极和第二测试头电极电性连接；\n\n[0019]S30，将所述背板平行于所述Micro LED阵列基板靠近所述Micro LED发光二极管的一侧；\n\n[0020]S40，导通所述光学测量探测头，所有的所述Micro LED发光二极管投影到所述背板上，若所述Micro LED发光二极管正常则所述背板的对应位置点亮；若所述Micro LED发光二极管存在缺陷，则所述背板的对应位置不亮；\n\n[0021]S50，若所述Micro LED发光二极管存在缺陷由背板显示出存在缺陷的所述MicroLED发光二极管的坐标值，采用激光转移头先将存在缺陷的所述Micro LED发光二极管四周的光敏胶软化，再取出存在缺陷的所述Micro LED发光二极管替换成正常的所述Micro LED发光二极管。\n\n[0022]与现有技术相比，本申请提供的一种micro LED阵列基板的修补装置以及microLED阵列基板的修补方法具有的有益效果为：\n\n[0023]1.首先，本申请所提供的micro LED阵列基板，所述micro LED阵列基板包括：micro LED基板和测试电路；所述测试电路包括设置在所述micro LED基板一侧的绝缘凸台层，分别设置在所述绝缘凸台层两侧，并与所述micro LED基板电性连接的两个测试头电极；以及设置在两个所述测试头电极背离所述绝缘层凸台一侧的Micro LED发光二极管，两个所述测试头电极分别电性连接所述Micro LED发光二极管的正电极和负电极，在检测时，分别将所述Micro LED发光二极管的输入端电性连接电源输入端，所述Micro LED发光二极管的控制端电性连接开关晶体管的输出端，所述Micro LED发光二极管的输出端接地，以此可以检测所述Micro LED阵列基板上各个所述Micro LED发光二极管是否存在缺陷，制作工艺简单，也节约了成本；\n\n[0024]2.其次，本申请所提供的micro LED阵列基板、显示面板以及micro LED阵列基板的修补方法，在进行检测时配合电荷耦合器件使用，一次性可以对整面micro LED阵列基板上的多个所述Micro LED发光二极管进行检测，并找出存在缺陷的所述Micro LED发光二极管的坐标位置，更高效、精准又便捷地找出了存在缺陷的所述Micro LED发光二极管的位置；\n\n[0025]3.进一步地，找到存在缺陷的所述Micro LED发光二极管的准确位置后，采用激光转移头先将存在缺陷的所述Micro LED发光二极管周围的光敏胶软化，再将存在缺陷的所述Micro LED发光二极管替换成正常的所述Micro LED发光二极管，即简单高效地修补了所述micro LED阵列基板中存在缺陷的所述micro LED发光二极管，提升了所述micro LED阵列基板的修补效率和良率。\n\n附图说明\n\n[0026]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0027]图1为本申请实施例提供的Micro LED阵列基板修补装置的第一结构示意图。\n\n[0028]图2为本申请实施例提供的Micro LED阵列基板上的测试电路图。\n\n[0029]图3为本申请实施例提供的Micro LED阵列基板修补装置的第二结构示意图。\n\n[0030]图4为本申请实施例提供的检测后所述背板的结构示意图。\n\n[0031]图5为本申请实施例提供的Micro LED阵列基板修补装置的第三结构示意图。\n\n[0032]图6为本申请实施例提供的修补后所述背板的结构示意图。\n\n[0033]图7为本申请实施例提供的Micro LED阵列基板修补方法的流程示意图。\n\n具体实施方式\n\n[0034]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0035]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0036]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0037]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0038]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0039]本申请提供一种micro LED阵列基板的修补装置以及micro LED阵列基板的修补方法，具体参阅图1-图7。\n\n[0040]现有的micro LED阵列基板的制作过程一般采用传统的micro LED基板转移方法，但转移前无法保证所述micro LED阵列基板上所有的所述micro LED发光二极管均是正常无缺陷的；而且目前的结构性转移头只能进行固定位置的micro LED阵列基板的转移，对存在缺陷的所述micro LED阵列基板的位置的检测也是不准确的，因此，如何对micro LED阵列基板巨量转移后存在缺陷的所述Micro LED发光二极管的位置进行定位、拔除以及重新补放的问题，急需改进。因此，本申请特提出一种micro LED阵列基板的修补装置以及microLED阵列基板的修补方法。\n\n[0041]参阅图1、图3和图5，本申请提供的一种Micro LED阵列基板的修补装置，所述micro LED阵列基板的修补装置包括：Micro LED阵列基板1、测试电路2、光学测量探测头3以及激光转移头4；\n\n[0042]所述测试电路2包括设置在所述Micro LED阵列基板一侧的绝缘凸台层223，分别设置在所述绝缘凸台层223两侧，并与所述Micro LED阵列基板电性连接的两个测试头电极；以及设置在两个所述测试头电极背离所述绝缘层凸台223一侧的Micro LED发光二极管21，两个所述测试头电极分别电性连接所述Micro LED发光二极管21的正电极211和负电极212，以便与所述光学测量探测头3连接进行检测。\n\n[0043]在本申请的一种实施例中，所述测试头电极分为：第一测试头电极221和第二测试头电极222；所述第一测试头电极221的一端电性连接所述Micro LED发光二极管21的正电极，所述第一测试头电极221的另一端电性连接所述第一金属层14的输出端，所述第二测试头电极222的一端电性连接所述Micro LED发光二极管21的负电极212，所述第二测试头电极222的另一端电性连接所述Micro LED阵列基板的公共电极层183。\n\n[0044]参阅图2，在本申请的一种实施例中，所述Micro LED发光二极管21的控制端电性连接一电容C，所述Micro LED发光二极管21的输出端电性连接所述电容C的另一端，所述Micro LED阵列基板的公共电极183。进一步地，所述电容C为存储电容，当所述开关晶体管T1接交流电压导通后，所述电容C开始充电，所述Micro LED发光二极管21也导通；当所述开关晶体管T1关闭或是接直流电压时，所述电容C开始放电，供给所述Micro LED发光二极管21，使得所述Micro LED发光二极管继续导通。\n\n[0045]在本申请的一种实施例中，所述开关晶体管T1的控制端电性连接扫描线，所述开关晶体管T1的输入端电性连接数据线，所述开关晶体管T1的输出端电性连接所述MicroLED发光二极管21的控制端。\n\n[0046]在本申请的一种实施例中，所述Micro LED阵列基板的修补装置中的所述光学测量探测头3用于捕捉整面所述Micro LED阵列基板上所有的所述Micro LED发光二极管21，观察是否存在有缺陷的所述Micro LED发光二极管21。\n\n[0047]在本申请的一种实施例中，所述光学测量探测头3为电荷耦合器件(CCD，charge-coupled device)光学测量探测头，电荷耦合器件是一种用于探测光的硅片，由时钟脉冲电压来产生和控制半导体势阱的变化，实现存储和传递电荷信息的固态电子器件。此处采用电荷耦合器件光学测量探测头可以更精准的检测出整个所述Micro LED阵列基板上可以正常发光的所述Micro LED发光二极管21，因而即可找出存在缺陷的所述Micro LED发光二极管21。\n\n[0048]在本申请的一种实施例中，所述Micro LED阵列基板的修补装置还包括一背板5。进一步地，所述背板5的一侧设置有坐标值，所述背板5包含坐标值的一侧背离所述MicroLED发光二极管21的一侧进行设置。所述背板5用于配合所述电荷耦合器件光学测量探测头3进行使用，检测者可以直接从所述背板5上读取出存在缺陷的所述Micro LED发光二极管21的坐标值，进而进行修补。\n\n[0049]在本申请的一种实施例中，所述背板5的长、宽大于等于所述Micro LED阵列基板的长、宽，只有当所述背板5的长、宽大于等于所述Micro LED阵列基板的长、宽时，所述Micro LED阵列基板上的所有的所述Micro LED发光二极管21的坐标值才能完全覆盖在所述背板5上，便于后续所述激光转移头4在去除存在缺陷的所述Micro LED发光二极管21时进行定位。\n\n[0050]进一步地，所述背板5选用透光率较高的玻璃材质，即透明材质，以保证当电压较小，所述Micro LED阵列基板的所述Micro LED发光二极管发出的光线较弱时，仍然能够清楚的看出整个所述Micro LED阵列基板上点亮的所述Micro LED发光二极管21。参阅图4，检测到所述背板5上存在缺陷的所述Micro LED发光二极管21的坐标52和正常的所述MicroLED发光二极管21的坐标51。\n\n[0051]进一步地，参阅图5，所述激光转移头4与一般的结构性转移头最大的区别就是所述激光转移头4上包含激光，可以在去除所述激光转移头4之前，先用激光照射，软化存在缺陷的所述Micro LED发光二极管21四周的光敏胶23，再将存在缺陷的所述Micro LED发光二极管21移出，可以更便捷的取出存在缺陷的所述Micro LED发光二极管21，节约成本，也提升了所述Micro LED阵列基板的良率。参阅图6，检测且替换完成后的所述所述Micro LED阵列基板上，所有的所述所述Micro LED发光二极管21的坐标全部为正常的所述Micro LED发光二极管21的坐标51。\n\n[0052]进一步地，所述Micro LED阵列基板还包括：衬底基板11、第一绝缘层12、遮光层13、第一金属层14、第二绝缘层15、第三过孔151、栅绝缘层16、第二金属层17、第三绝缘层18，设置在所述第三绝缘层18上的第一过孔181、第二过孔182和公共电极层183。所述衬底基板11可以是玻璃基板或是树脂基板。\n\n[0053]参阅图7，本申请提供一种Micro LED阵列基板的修补方法，采用上述所述的MicroLED阵列基板的修补装置，该方法包括：\n\n[0054]S10，提供设置有光学测试电路的Micro LED阵列基板1、光学测量探测头3以及激光转移头4；组成完整的Micro LED阵列基板的修补装置，该修补装置既可以实现对所述Micro LED阵列基板上存在缺陷的所述Micro LED发光二极管21的坐标位置进行检测，还可以先将存在缺陷的所述Micro LED阵列基板上的存在缺陷的所述Micro LED发光二极管21四周的光敏胶23进行软化，再取出存在缺陷的所述Micro LED发光二极管21替换成正常的所述Micro LED发光二极管21；\n\n[0055]S20，将所述光学测量探测头3的电极与所述Micro LED阵列基板的第一测试头电极221和第二测试头电极222电性连接；建立所述光学测量探测头3与所述Micro LED阵列基板之间的电路关系，当导通所有的所述Micro LED阵列基板上的所述Micro LED发光二极管21时，可方便查找是否存在有缺陷的所述Micro LED发光二极管21；\n\n[0056]S30，将所述背板5平行于所述Micro LED阵列基板靠近所述Micro LED发光二极管21的一侧；便有检测者可以直观的从所述背板5上观察出是否存在有缺陷的所述Micro LED发光二极管21以及存在缺陷的所述Micro LED发光二极管21的坐标值；\n\n[0057]S40，导通所述光学测量探测头3，所有的所述Micro LED发光二极管21投影到所述背板5上，若所述Micro LED发光二极管21正常则所述背板5的对应位置点亮；若所述MicroLED发光二极管21存在缺陷，则所述背板5的对应位置不亮；导通所述光学测量探测头3，所述光学测量探测头3与所有的所述Micro LED发光二极管21连通，根据各个所述Micro LED发光二极管21是否能够被点亮即可确定各个所述Micro LED发光二极管21是否存在缺陷；\n\n[0058]S50，若所述Micro LED发光二极管21存在缺陷由背板显示出存在缺陷的所述Micro LED发光二极管21的坐标值，采用激光转移头4先将存在缺陷的所述Micro LED发光二极管21四周的光敏胶23软化，再取出存在缺陷的所述Micro LED发光二极管21替换成正常的所述Micro LED发光二极管21。采用激光软化存在缺陷的所述Micro LED发光二极管21四周的光敏胶23，大大的降低了取出存在缺陷的所述Micro LED发光二极管21的难度，也节省了作业时间和成本，提高了所述Micro LED阵列基板的修补良率。\n\n[0059]进一步地，所述开关晶体管T1可以是薄膜晶体管或是场效应晶体管，所述开关晶体管T1的控制端即为栅极，在一种实施例中，所述开关晶体管T1的输入端即为源极，所述开关晶体管T1的输出端即为漏极；在另一种实施例中，所述开关晶体管T1的输入端即为漏极，所述开关晶体管T1的输出端即为源极。当给控制端高电平时，源极和漏极通过半导体层连接，此时所述开关晶体管T1处于开启状态。\n\n[0060]因此，本申请提供的一种micro LED阵列基板的修补装置以及micro LED阵列基板的修补方法具有的有益效果为：首先，本申请所提供的micro LED阵列基板，所述micro LED阵列基板包括：micro LED基板和测试电路；所述测试电路包括设置在所述micro LED基板一侧的绝缘凸台层，分别设置在所述绝缘凸台层两侧，并与所述micro LED基板电性连接的两个测试头电极；以及设置在两个所述测试头电极背离所述绝缘层凸台一侧的Micro LED发光二极管，两个所述测试头电极分别电性连接所述Micro LED发光二极管的正电极和负电极，在检测时，分别将所述Micro LED发光二极管的输入端电性连接电源输入端，所述Micro LED发光二极管的控制端电性连接开关晶体管的输出端，所述Micro LED发光二极管的输出端接地，以此可以检测所述Micro LED阵列基板上各个所述Micro LED发光二极管是否存在缺陷，制作工艺简单，也节约了成本；其次，本申请所提供的micro LED阵列基板、显示面板以及micro LED阵列基板的修补方法，在进行检测时配合电荷耦合器件使用，一次性可以对整面micro LED阵列基板上的多个所述Micro LED发光二极管进行检测，并找出存在缺陷的所述Micro LED发光二极管的坐标位置，更高效、精准又便捷地找出了存在缺陷的所述Micro LED发光二极管的位置；进一步地，找到存在缺陷的所述Micro LED发光二极管的准确位置后，采用激光转移头先将存在缺陷的所述Micro LED发光二极管周围的光敏胶软化，再将存在缺陷的所述Micro LED发光二极管替换成正常的所述Micro LED发光二极管，即简单高效地修补了所述micro LED阵列基板中存在缺陷的所述micro LED发光二极管，提升了所述micro LED阵列基板的修补效率和良率。\n\n[0061]以上对本申请实施例所提供的一种micro LED阵列基板的检测装置以及microLED阵列基板的检测方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10786, 23840, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种显示面板及其制备方法。\n\n背景技术\n\n[0002]目前，在玻璃基板上进行薄膜晶体管工艺驱动迷你发光二极管显示为一个新的领域，但由于玻璃基板透明，容易造成光的损失，且光直接照射在薄膜晶体管上会造成薄膜晶体管I-V曲线向右偏移严重，进而造成发光二极管灯损失严重，且发光二极管的光利用率降低。\n\n发明内容\n\n[0003]本申请提供一种显示面板，以降低混光对薄膜晶体管的干扰及提高迷你发光二极管的光利用率。\n\n[0004]本申请提供一种显示面板，包括：\n\n[0005]基板；\n\n[0006]反射层，所述反射层覆盖所述基板，所述反射层包括若干第一分层和若干第二分层，每一所述第一分层和每一所述第二分层依次交替层叠设置，所述第一分层的折射率和所述第二分层的折射率不同；\n\n[0007]薄膜晶体管，所述薄膜晶体管设置于所述反射层上；以及\n\n[0008]迷你发光二极管，所述迷你发光二极管设置于所述薄膜晶体管上以电连接所述薄膜晶体管。\n\n[0009]在本申请所提供的显示面板中，所述反射层的厚度为1000埃-10000埃。\n\n[0010]在本申请所提供的显示面板中，所述每一第一分层和所述每一第二分层的厚度均为大于等于紫外光波长的四分之一。\n\n[0011]在本申请所提供的显示面板中，所述第一分层和第二分层的材料选自透明绝缘材料。\n\n[0012]在本申请所提供的显示面板中，所述第一分层和第二分层的材料选自二氧化硅、氮化硅、氧化铝、石墨烯、氟化锂、碳化硅、硫化锌和硅。\n\n[0013]本申请提供一种显示面板的制备方法，包括：\n\n[0014]提供一基板；\n\n[0015]在所述基板上设置依次交替层叠设置两种不同的折射率材料形成若干第一分层及若干第二分层，所述若干第一分层和所述若干第二分层形成反射层；\n\n[0016]在所述反射层上形成薄膜晶体管；以及\n\n[0017]在所述薄膜晶体管上设置迷你发光二极管。\n\n[0018]在本身申请所提供的显示面板的制备方法中，所述反射层的厚度为1000埃-10000埃。\n\n[0019]在本身申请所提供的显示面板的制备方法中，所述每一第一分层和所述每一第二分层的厚度均为大于等于紫外光波长的四分之一。\n\n[0020]在本身申请所提供的显示面板的制备方法中，所述第一分层和第二分层的材料选自透明绝缘材料。\n\n[0021]在本身申请所提供的显示面板的制备方法中，所述在所述反射层上形成薄膜晶体管的步骤之后，还包括在所述薄膜晶体管上形成平坦层。\n\n[0022]本申请提供一种显示面板及其制备方法，所述显示面板包括基板、反射层、薄膜晶体管和迷你发光二极管，所述反射层覆盖所述基板，所述反射层包括若干第一分层和若干第二分层，每一所述第一分层和每一所述第二分层依次交替层叠设置，所述第一分层的折射率和所述第二分层的折射率不同，所述薄膜晶体管设置于所述反射层上，所述迷你发光二极管设置于所述薄膜晶体管上，并与所述薄膜晶体管电连接。在本申请中，将反射层设置于所述基板与薄膜晶体管之间，进而将进入背光源中的紫外光反射掉，进而降低了混光对薄膜晶体管器件的干扰，且对迷你发光二极管出射的光进行发射，进而提高发光二极管的光利用率。\n\n附图说明\n\n[0023]为了更清楚地说明本申请中的技术方案，下面将对实施方式描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施方式，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0024]图1为本申请所提供的显示面板的结构剖视图。\n\n[0025]图2为本申请所提供的显示面板的制备方法的流程图。\n\n[0026]图3为本申请所提供的显示面板的制备方法的流程剖视图。\n\n具体实施方式\n\n[0027]请参阅图1，图1为本申请所提供的显示面板的结构剖视图。本申请提供一种显示面板10。所述显示面板10包括基板100、反射层200、薄膜晶体管300和迷你发光二极管400。\n\n[0028]所述基板100包括玻璃基板、石英基板和树脂基板等。\n\n[0029]所述反射层200设置于所述基板100上。所述反射层的厚度为1000埃-10000埃。所述反射层200包括若干第一分层210和若干第二分层220。每一所述第一分层210和每一所述第二分层220依次交替层叠设置。所述反射层200的分层层数不限制。如，所述反射层200的分层层数可以为2层、3层、4层、5层、6层和7层等。在本实施例中，所述反射层200的分层层数为2层，即，所述反射层200包括第一分层210和第二分层230。所述第一分层210的折射率和所述第二分层220的折射率不同。所述第一分层210及所述第二分层220的材料选自透明绝缘材料。\n\n[0030]在另一实施例中，所述第一分层210和所述第二分层220的厚度均为大于等于紫外光波长的四分之一。\n\n[0031]在另一实施例中，所述第一分层210和第二分层220的材料选自二氧化硅、氮化硅、氧化铝、石墨烯、氟化锂、碳化硅、硫化锌和硅中的一种或几种组合。\n\n[0032]所述薄膜晶体管300设置于所述反射层200上。所述薄膜晶体管300包括第一金属层310、保护层320、有源层330、掺杂层340、源极350、漏极360和键合层370。所述第一金属层310设置于所述反射层200上。所述第一金属层310包括第一部分311和第二部分312。所述第一金属层310的材料包括Al、Mo和Cu等。所述保护层320设置于所述第一金属层310和所述反射层200上。所述有源层330设置于所述保护层320上，并位于所述第二部分312之上。所述有源层330的材料包括非晶硅。所述掺杂层340包括P型掺杂区341和N型掺杂区342。所述P型掺杂区341位于所述有源层330的一侧。所述N型掺杂区342位于所述有源层330的另一侧。所述源极350和所述漏极360覆盖所述掺杂层340和有源层330上。所述源极350位于所述P型掺杂区341或N型掺杂区342上，并与所述保护层320的一侧相接触。所述漏极360位于所述P型掺杂区341或N型掺杂区342上，并与所述保护层320的另一侧相接触。所述键合层370与所述有源层330同层设置于所述保护层320上。\n\n[0033]在另一实施例中，所述显示面板10还包括平坦层500。所述平坦层500设置于所述薄膜晶体管300上。\n\n[0034]在另一实施例中，所述平坦层500包括第二通孔510和第一通孔520。所述第二通孔510贯穿所述平坦层500及所述保护层320以暴露所述第一金属层310。所述第一通孔520贯穿所述平坦层500以暴露所述键合层370及所述保护层320。\n\n[0035]在本申请中，在键合层上及第二通孔中设置迷你发光二极管，避免迷你发光二极管在制备或使用的过程中移位，进而影响显示面板的性能，且，所述键合层可以降低阻抗作用，并提高电子迁移率。\n\n[0036]在另一实施例中，所述显示面板10还包括氧化铟锡层600。所述氧化铟锡层600填充于所述第二通孔510中以电连接所述第一部分311。所述氧化铟锡层600用于保护金手指。\n\n[0037]所述迷你发光二极管400设置于所述第一通孔520中。所述迷你发光二极管400电连接于所述薄膜晶体管300，需要说明的是，图1中的箭头表示光线的路径。\n\n[0038]在本申请中，所述迷你发光二极管为主动矩阵式迷你发光二极管，在基板上设置反射层，将反射层的分层厚度设置为大于等于紫外光波长的四分之一，在反射层上设置薄膜晶体管，所述薄膜晶体管驱动所述迷你发光二极管，当迷你发光二极管的光线出射至薄膜晶体管上时，因薄膜晶体管的底部设置有反射层，光线经反射层反射，进而提高迷你发光二极管的光利用率；因薄膜晶体管的底部设置的反射层的分层厚度设置为大于等于紫外光波长的四分之一，可将进入背光源中的紫外光反射掉，降低了混光对薄膜晶体管的干扰，进而降低了混光对薄膜晶体管的I-V曲线向右移的影响，\n\n[0039]本申请提供一种显示面板，在所述反射层上设置所述薄膜晶体管，利用反射层将背光源中的紫外光反射掉，进而降低混光对所述薄膜晶体管干扰，并对迷你发光二极管的出射的光线进行反射，进而提高迷你发光二极管的光利用率。\n\n[0040]请参阅图2和图3，图2为本申请所提供的显示面板的制备方法的流程图。图3为本申请所提供的显示面板的制备方法的流程剖视图。本申请提供一种显示面板10的制备方法，包括：\n\n[0041]20、提供一基板100。\n\n[0042]所述基板100包括玻璃基板、石英基板和树脂基板等。\n\n[0043]30、在所述基板100上设置依次交替层叠设置两种不同的折射率材料形成若干第一分层210及若干第二分层220，所述若干第一分层210和所述若干第二分层220形成反射层200。\n\n[0044]在所述基板100上设置依次交替层叠沉积两种不同的折射率材料形成若干第一分层210及若干第二分层220。若干所述第一分层210及若干所述第二分层220形成反射层200。所述反射层的厚度为1000埃-10000埃。所述反射层200包括若干第一分层210和若干第二分层220。每一所述第一分层210和每一所述第二分层220依次交替层叠设置。所述反射层200的分层层数不限制。如，所述反射层200的分层层数可以为2层、3层、4层、5层、6层和7层等。在本实施例中，所述反射层200的分层层数为2层，即，所述反射层200包括第一分层210和第二分层230。所述第一分层210的折射率和所述第二分层220的折射率不同。所述第一分层210及所述第二分层220的材料选自透明绝缘材料。\n\n[0045]在另一实施例中，所述第一分层210和所述第二分层220的厚度均为大于等于紫外光波长的四分之一。\n\n[0046]在显示面板10中设置反射层200，将反射层200的分层厚度设置为大于等于紫外光波长的四分之一，可将紫外光反射掉，降低了混光对薄膜晶体管300的干扰，进而降低了混光对薄膜晶体管300的I-V曲线向右移的影响，即降低混光对薄膜晶体管的影响，并提高发光二极管的光利用率。\n\n[0047]在另一实施例中，所述第一分层210和第二分层220的材料选自二氧化硅、氮化硅、氧化铝、石墨烯、氟化锂、碳化硅、硫化锌和硅中的一种或几种组合。\n\n[0048]40、在所述反射层200上形成薄膜晶体管300。\n\n[0049]所述薄膜晶体管300包括第一金属层310、保护层320、有源层330、掺杂层340、源极350、漏极360和键合层370。\n\n[0050]具体地，在所述反射层200上沉积第一金属层310材料，对所述第一金属材料进行蚀刻形成第一金属层310。所述第一金属层310包括第一部分311和第二部分312。所述第一金属层310的材料包括Al、Mo和Cu等。在所述第一金属层310和所述反射层200上沉积所述保护层320材料，形成所述保护层320。在所述保护层320上沉积所述有源层330材料，对所述有源层330材料进行蚀刻，形成所述有源层330，所述有源层330位于所述第二部分312之上。所述有源层330的材料包括非晶硅。在所述有源层330上及所述保护层320上沉积掺杂层340材料，对所述掺杂层340进行蚀刻形成掺杂层340。所述掺杂层340位于所述有源层330上。所述掺杂层340包括P型掺杂区341和N型掺杂区342。所述P型掺杂区341位于所述有源层330的一侧。所述N型掺杂区342位于所述有源层330的另一侧。在所述掺杂层340上、有源层330和保护层320上沉积第二金属层，对所述第二金属层进行蚀刻，形成源极350、漏极360及键合层370。所述源极350覆盖所述掺杂层340的一侧及所述有源层330的一侧，并与所述保护层320的一侧相接触。所述漏极360覆盖所述掺杂层340的另一侧及所述有源层330的另一侧，并于所述保护层320的另一侧相接触。\n\n[0051]在另一实施例中，在所述保护层320上依次层叠沉积有源层330材料及掺杂层340材料，蚀刻形成有源层330及掺杂层340。\n\n[0052]在另一实施例中，在所述反射层200上形成薄膜晶体管300的步骤之后，还包括在所述薄膜晶体管300上沉积平坦层500材料，蚀刻形成平坦层500。\n\n[0053]在另一实施例中，在所述薄膜晶体管300上形成平坦层500的步骤之后还包括对所述平坦层500和所述保护层320进行蚀刻，形成第二通孔510和第一通孔520。所述第二通孔510贯穿所述平坦层500及所述保护层320以暴露所述第一部分311。所述第一通孔520贯穿所述平坦层500以暴露所述键合层370及所述保护层320。所述键合层用370于固定所述迷你发光二极管。\n\n[0054]在本申请中，所述键合层用于键合所迷你述发光二极管，避免迷你发光二极管在制备或使用的过程中移位，进而影响显示面板的性能，且所述键合层可以降低阻抗，并提高电子的迁移率。\n\n[0055]在另一实施例中，在所述平坦层500和所述保护层320上形成第一通孔500和第二通孔610的步骤之后，还包括在所述第二通孔510填充氧化铟锡层600材料形成氧化铟锡层600。所述氧化铟锡层600填充于所述第二通孔510中以电连接所述第一部分311。所述氧化铟锡层600的材料包括氧化铟锡，所述氧化烟锡层还可用氧化铟锌等替代。\n\n[0056]50、在所述薄膜晶体管300上设置迷你发光二极管400。\n\n[0057]在所述第一通孔520中设置迷你发光二极管400。所述迷你发光二极管400与所述薄膜晶体管300电连接。\n\n[0058]本申请提供一种显示面板及其制备方法，所述显示面板包括基板、反射层、薄膜晶体管和迷你发光二极管，所述反射层覆盖所述基板，所述反射层包括若干第一分层和若干第二分层，每一所述第一分层和每一所述第二分层依次交替层叠设置，所述第一分层的折射率和所述第二分层的折射率不同，所述薄膜晶体管设置于所述反射层上，所述迷你发光二极管设置于所述薄膜晶体管上，并与所述薄膜晶体管电连接。在本申请中，在反射层上设置有薄膜晶体管，可将到达薄膜晶体管的迷你发光二极管的光线反射，进而提高了迷你发光二极管的光利用率，并且因反射层的分层的厚度设置为大于等于紫外光波长的四分之一，可将进入背光源中的紫外光反射掉，进而降低了混光对薄膜晶体管器件的干扰。\n\n[0059]以上对本申请实施例所提供的一种显示面板及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种显示面板及其制备方法。\n\n背景技术\n\n[0002]目前，在玻璃基板上进行薄膜晶体管工艺驱动迷你发光二极管显示为一个新的领域，但由于玻璃基板透明，容易造成光的损失，且光直接照射在薄膜晶体管上会造成薄膜晶体管I-V曲线向右偏移严重，进而造成发光二极管灯损失严重，且发光二极管的光利用率降低。\n\n发明内容\n\n[0003]本申请提供一种显示面板，以降低混光对薄膜晶体管的干扰及提高迷你发光二极管的光利用率。\n\n[0004]本申请提供一种显示面板，包括：\n\n[0005]基板；\n\n[0006]反射层，所述反射层覆盖所述基板，所述反射层包括若干第一分层和若干第二分层，每一所述第一分层和每一所述第二分层依次交替层叠设置，所述第一分层的折射率和所述第二分层的折射率不同；\n\n[0007]薄膜晶体管，所述薄膜晶体管设置于所述反射层上；以及\n\n[0008]迷你发光二极管，所述迷你发光二极管设置于所述薄膜晶体管上以电连接所述薄膜晶体管。\n\n[0009]在本申请所提供的显示面板中，所述反射层的厚度为1000埃-10000埃。\n\n[0010]在本申请所提供的显示面板中，所述每一第一分层和所述每一第二分层的厚度均为大于等于紫外光波长的四分之一。\n\n[0011]在本申请所提供的显示面板中，所述第一分层和第二分层的材料选自透明绝缘材料。\n\n[0012]在本申请所提供的显示面板中，所述第一分层和第二分层的材料选自二氧化硅、氮化硅、氧化铝、石墨烯、氟化锂、碳化硅、硫化锌和硅。\n\n[0013]本申请提供一种显示面板的制备方法，包括：\n\n[0014]提供一基板；\n\n[0015]在所述基板上设置依次交替层叠设置两种不同的折射率材料形成若干第一分层及若干第二分层，所述若干第一分层和所述若干第二分层形成反射层；\n\n[0016]在所述反射层上形成薄膜晶体管；以及\n\n[0017]在所述薄膜晶体管上设置迷你发光二极管。\n\n[0018]在本身申请所提供的显示面板的制备方法中，所述反射层的厚度为1000埃-10000埃。\n\n[0019]在本身申请所提供的显示面板的制备方法中，所述每一第一分层和所述每一第二分层的厚度均为大于等于紫外光波长的四分之一。\n\n[0020]在本身申请所提供的显示面板的制备方法中，所述第一分层和第二分层的材料选自透明绝缘材料。\n\n[0021]在本身申请所提供的显示面板的制备方法中，所述在所述反射层上形成薄膜晶体管的步骤之后，还包括在所述薄膜晶体管上形成平坦层。\n\n[0022]本申请提供一种显示面板及其制备方法，所述显示面板包括基板、反射层、薄膜晶体管和迷你发光二极管，所述反射层覆盖所述基板，所述反射层包括若干第一分层和若干第二分层，每一所述第一分层和每一所述第二分层依次交替层叠设置，所述第一分层的折射率和所述第二分层的折射率不同，所述薄膜晶体管设置于所述反射层上，所述迷你发光二极管设置于所述薄膜晶体管上，并与所述薄膜晶体管电连接。在本申请中，将反射层设置于所述基板与薄膜晶体管之间，进而将进入背光源中的紫外光反射掉，进而降低了混光对薄膜晶体管器件的干扰，且对迷你发光二极管出射的光进行发射，进而提高发光二极管的光利用率。\n\n附图说明\n\n[0023]为了更清楚地说明本申请中的技术方案，下面将对实施方式描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施方式，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0024]图1为本申请所提供的显示面板的结构剖视图。\n\n[0025]图2为本申请所提供的显示面板的制备方法的流程图。\n\n[0026]图3为本申请所提供的显示面板的制备方法的流程剖视图。\n\n具体实施方式\n\n[0027]请参阅图1，图1为本申请所提供的显示面板的结构剖视图。本申请提供一种显示面板10。所述显示面板10包括基板100、反射层200、薄膜晶体管300和迷你发光二极管400。\n\n[0028]所述基板100包括玻璃基板、石英基板和树脂基板等。\n\n[0029]所述反射层200设置于所述基板100上。所述反射层的厚度为1000埃-10000埃。所述反射层200包括若干第一分层210和若干第二分层220。每一所述第一分层210和每一所述第二分层220依次交替层叠设置。所述反射层200的分层层数不限制。如，所述反射层200的分层层数可以为2层、3层、4层、5层、6层和7层等。在本实施例中，所述反射层200的分层层数为2层，即，所述反射层200包括第一分层210和第二分层230。所述第一分层210的折射率和所述第二分层220的折射率不同。所述第一分层210及所述第二分层220的材料选自透明绝缘材料。\n\n[0030]在另一实施例中，所述第一分层210和所述第二分层220的厚度均为大于等于紫外光波长的四分之一。\n\n[0031]在另一实施例中，所述第一分层210和第二分层220的材料选自二氧化硅、氮化硅、氧化铝、石墨烯、氟化锂、碳化硅、硫化锌和硅中的一种或几种组合。\n\n[0032]所述薄膜晶体管300设置于所述反射层200上。所述薄膜晶体管300包括第一金属层310、保护层320、有源层330、掺杂层340、源极350、漏极360和键合层370。所述第一金属层310设置于所述反射层200上。所述第一金属层310包括第一部分311和第二部分312。所述第一金属层310的材料包括Al、Mo和Cu等。所述保护层320设置于所述第一金属层310和所述反射层200上。所述有源层330设置于所述保护层320上，并位于所述第二部分312之上。所述有源层330的材料包括非晶硅。所述掺杂层340包括P型掺杂区341和N型掺杂区342。所述P型掺杂区341位于所述有源层330的一侧。所述N型掺杂区342位于所述有源层330的另一侧。所述源极350和所述漏极360覆盖所述掺杂层340和有源层330上。所述源极350位于所述P型掺杂区341或N型掺杂区342上，并与所述保护层320的一侧相接触。所述漏极360位于所述P型掺杂区341或N型掺杂区342上，并与所述保护层320的另一侧相接触。所述键合层370与所述有源层330同层设置于所述保护层320上。\n\n[0033]在另一实施例中，所述显示面板10还包括平坦层500。所述平坦层500设置于所述薄膜晶体管300上。\n\n[0034]在另一实施例中，所述平坦层500包括第二通孔510和第一通孔520。所述第二通孔510贯穿所述平坦层500及所述保护层320以暴露所述第一金属层310。所述第一通孔520贯穿所述平坦层500以暴露所述键合层370及所述保护层320。\n\n[0035]在本申请中，在键合层上及第二通孔中设置迷你发光二极管，避免迷你发光二极管在制备或使用的过程中移位，进而影响显示面板的性能，且，所述键合层可以降低阻抗作用，并提高电子迁移率。\n\n[0036]在另一实施例中，所述显示面板10还包括氧化铟锡层600。所述氧化铟锡层600填充于所述第二通孔510中以电连接所述第一部分311。所述氧化铟锡层600用于保护金手指。\n\n[0037]所述迷你发光二极管400设置于所述第一通孔520中。所述迷你发光二极管400电连接于所述薄膜晶体管300，需要说明的是，图1中的箭头表示光线的路径。\n\n[0038]在本申请中，所述迷你发光二极管为主动矩阵式迷你发光二极管，在基板上设置反射层，将反射层的分层厚度设置为大于等于紫外光波长的四分之一，在反射层上设置薄膜晶体管，所述薄膜晶体管驱动所述迷你发光二极管，当迷你发光二极管的光线出射至薄膜晶体管上时，因薄膜晶体管的底部设置有反射层，光线经反射层反射，进而提高迷你发光二极管的光利用率；因薄膜晶体管的底部设置的反射层的分层厚度设置为大于等于紫外光波长的四分之一，可将进入背光源中的紫外光反射掉，降低了混光对薄膜晶体管的干扰，进而降低了混光对薄膜晶体管的I-V曲线向右移的影响，\n\n[0039]本申请提供一种显示面板，在所述反射层上设置所述薄膜晶体管，利用反射层将背光源中的紫外光反射掉，进而降低混光对所述薄膜晶体管干扰，并对迷你发光二极管的出射的光线进行反射，进而提高迷你发光二极管的光利用率。\n\n[0040]请参阅图2和图3，图2为本申请所提供的显示面板的制备方法的流程图。图3为本申请所提供的显示面板的制备方法的流程剖视图。本申请提供一种显示面板10的制备方法，包括：\n\n[0041]20、提供一基板100。\n\n[0042]所述基板100包括玻璃基板、石英基板和树脂基板等。\n\n[0043]30、在所述基板100上设置依次交替层叠设置两种不同的折射率材料形成若干第一分层210及若干第二分层220，所述若干第一分层210和所述若干第二分层220形成反射层200。\n\n[0044]在所述基板100上设置依次交替层叠沉积两种不同的折射率材料形成若干第一分层210及若干第二分层220。若干所述第一分层210及若干所述第二分层220形成反射层200。所述反射层的厚度为1000埃-10000埃。所述反射层200包括若干第一分层210和若干第二分层220。每一所述第一分层210和每一所述第二分层220依次交替层叠设置。所述反射层200的分层层数不限制。如，所述反射层200的分层层数可以为2层、3层、4层、5层、6层和7层等。在本实施例中，所述反射层200的分层层数为2层，即，所述反射层200包括第一分层210和第二分层230。所述第一分层210的折射率和所述第二分层220的折射率不同。所述第一分层210及所述第二分层220的材料选自透明绝缘材料。\n\n[0045]在另一实施例中，所述第一分层210和所述第二分层220的厚度均为大于等于紫外光波长的四分之一。\n\n[0046]在显示面板10中设置反射层200，将反射层200的分层厚度设置为大于等于紫外光波长的四分之一，可将紫外光反射掉，降低了混光对薄膜晶体管300的干扰，进而降低了混光对薄膜晶体管300的I-V曲线向右移的影响，即降低混光对薄膜晶体管的影响，并提高发光二极管的光利用率。\n\n[0047]在另一实施例中，所述第一分层210和第二分层220的材料选自二氧化硅、氮化硅、氧化铝、石墨烯、氟化锂、碳化硅、硫化锌和硅中的一种或几种组合。\n\n[0048]40、在所述反射层200上形成薄膜晶体管300。\n\n[0049]所述薄膜晶体管300包括第一金属层310、保护层320、有源层330、掺杂层340、源极350、漏极360和键合层370。\n\n[0050]具体地，在所述反射层200上沉积第一金属层310材料，对所述第一金属材料进行蚀刻形成第一金属层310。所述第一金属层310包括第一部分311和第二部分312。所述第一金属层310的材料包括Al、Mo和Cu等。在所述第一金属层310和所述反射层200上沉积所述保护层320材料，形成所述保护层320。在所述保护层320上沉积所述有源层330材料，对所述有源层330材料进行蚀刻，形成所述有源层330，所述有源层330位于所述第二部分312之上。所述有源层330的材料包括非晶硅。在所述有源层330上及所述保护层320上沉积掺杂层340材料，对所述掺杂层340进行蚀刻形成掺杂层340。所述掺杂层340位于所述有源层330上。所述掺杂层340包括P型掺杂区341和N型掺杂区342。所述P型掺杂区341位于所述有源层330的一侧。所述N型掺杂区342位于所述有源层330的另一侧。在所述掺杂层340上、有源层330和保护层320上沉积第二金属层，对所述第二金属层进行蚀刻，形成源极350、漏极360及键合层370。所述源极350覆盖所述掺杂层340的一侧及所述有源层330的一侧，并与所述保护层320的一侧相接触。所述漏极360覆盖所述掺杂层340的另一侧及所述有源层330的另一侧，并于所述保护层320的另一侧相接触。\n\n[0051]在另一实施例中，在所述保护层320上依次层叠沉积有源层330材料及掺杂层340材料，蚀刻形成有源层330及掺杂层340。\n\n[0052]在另一实施例中，在所述反射层200上形成薄膜晶体管300的步骤之后，还包括在所述薄膜晶体管300上沉积平坦层500材料，蚀刻形成平坦层500。\n\n[0053]在另一实施例中，在所述薄膜晶体管300上形成平坦层500的步骤之后还包括对所述平坦层500和所述保护层320进行蚀刻，形成第二通孔510和第一通孔520。所述第二通孔510贯穿所述平坦层500及所述保护层320以暴露所述第一部分311。所述第一通孔520贯穿所述平坦层500以暴露所述键合层370及所述保护层320。所述键合层用370于固定所述迷你发光二极管。\n\n[0054]在本申请中，所述键合层用于键合所迷你述发光二极管，避免迷你发光二极管在制备或使用的过程中移位，进而影响显示面板的性能，且所述键合层可以降低阻抗，并提高电子的迁移率。\n\n[0055]在另一实施例中，在所述平坦层500和所述保护层320上形成第一通孔500和第二通孔610的步骤之后，还包括在所述第二通孔510填充氧化铟锡层600材料形成氧化铟锡层600。所述氧化铟锡层600填充于所述第二通孔510中以电连接所述第一部分311。所述氧化铟锡层600的材料包括氧化铟锡，所述氧化烟锡层还可用氧化铟锌等替代。\n\n[0056]50、在所述薄膜晶体管300上设置迷你发光二极管400。\n\n[0057]在所述第一通孔520中设置迷你发光二极管400。所述迷你发光二极管400与所述薄膜晶体管300电连接。\n\n[0058]本申请提供一种显示面板及其制备方法，所述显示面板包括基板、反射层、薄膜晶体管和迷你发光二极管，所述反射层覆盖所述基板，所述反射层包括若干第一分层和若干第二分层，每一所述第一分层和每一所述第二分层依次交替层叠设置，所述第一分层的折射率和所述第二分层的折射率不同，所述薄膜晶体管设置于所述反射层上，所述迷你发光二极管设置于所述薄膜晶体管上，并与所述薄膜晶体管电连接。在本申请中，在反射层上设置有薄膜晶体管，可将到达薄膜晶体管的迷你发光二极管的光线反射，进而提高了迷你发光二极管的光利用率，并且因反射层的分层的厚度设置为大于等于紫外光波长的四分之一，可将进入背光源中的紫外光反射掉，进而降低了混光对薄膜晶体管器件的干扰。\n\n[0059]以上对本申请实施例所提供的一种显示面板及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10787, 23841, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种显示面板及其制备方法。\n\n背景技术\n\n[0002]目前，在玻璃基板上进行薄膜晶体管工艺驱动迷你发光二极管显示为一个新的领域，但由于玻璃基板透明，容易造成光的损失，且光直接照射在薄膜晶体管上会造成薄膜晶体管I-V曲线向右偏移严重，进而造成发光二极管灯损失严重，且发光二极管的光利用率减弱。\n\n发明内容\n\n[0003]本申请提供一种显示面板，以降低混光对薄膜晶体管的干扰及提高迷你发光二极管的光利用率。\n\n[0004]本申请提供一种显示面板，包括：\n\n[0005]基板；\n\n[0006]薄膜晶体管，所述薄膜晶体管设置于所述基板上；以及\n\n[0007]反射层，所述反射层覆盖所述薄膜晶体管及所述基板，所述反射层包括通孔，所述通孔贯穿所述反射层以暴露所述薄膜晶体管，所述反射层包括若干第一分层和若干第二分层，每一所述第一分层和每一所述第二分层依次交替层叠设置，每一所述第一分层及每一所述第二分层由两种不同的折射率材料形成；以及\n\n[0008]迷你发光二极管，所述迷你发光二极管设置于所述通孔中以电连接所述薄膜晶体管。\n\n[0009]在本申请所提供的显示面板中，所述反射层的厚度为1000埃-10000埃。\n\n[0010]在本申请所提供的显示面板中，所述每一第一分层及所述每一第二分层的厚度均为大于等于紫外光波长的四分之一。\n\n[0011]在本申请所提供的显示面板中，所述第一分层的材料及所述第二分层的材料选自透明绝缘材料。\n\n[0012]在本申请所提供的显示面板中，所述第一分层的材料及所述第二分层的材料选自二氧化硅、氮化硅、氧化铝、石墨烯、氟化锂、碳化硅、硫化锌和硅，所述第一种材料与所述第二种材料不同。\n\n[0013]本申请提供一种显示面板的制备方法，包括：\n\n[0014]提供一基板；\n\n[0015]在所述基板上形成薄膜晶体管；\n\n[0016]在所述基板及所述薄膜晶体管上形成反射层，所述反射层包括通孔，所述通孔贯穿所述反射层以暴露所述薄膜晶体管，所述反射层包括依次交替层叠设置的若干第一分层和若干第二分层，所述第一分层的材料与所述第二分层的材料由两种不同折射率的材料形成；以及\n\n[0017]在所述通孔中设置迷你发光二极管以电连接所述薄膜晶体管。\n\n[0018]在本申请所提供的显示面板的制备方法中，所述反射层的厚度为1000埃-10000埃。\n\n[0019]在本申请所提供的显示面板的制备方法中，所述每一第一分层及所述每一第二分层的厚度均为大于等于紫外光波长的四分之一。\n\n[0020]在本申请所提供的显示面板的制备方法中，所述第一分层的材料及所述第二分层的材料选自透明绝缘材料。\n\n[0021]在本申请所提供的显示面板的制备方法中，所述第一分层的材料及所述第二分层的材料选自二氧化硅、氮化硅、氧化铝、石墨烯、氟化锂、碳化硅、硫化锌和硅。\n\n[0022]本申请提供一种显示面板及其制备方法，所述显示面板包括基板、薄膜晶体管、反射层和迷你发光二极管，所述薄膜晶体管设置于所述基板上，所述反射层设置于所述薄膜晶体管上，所述反射层包括通孔，所述通孔贯穿所述反射层以暴露所述薄膜晶体管，所述反射层包括若干第一分层和若干第二分层，每一所述第一分层和每一所述第二分层依次交替层叠设置，所述第一分层的折射率和所述第二分层的折射率不同，所述迷你发光二极管设置于所述通孔中以电连接所述薄膜晶体管。在本申请中，将所述反射层设置于所述反射层上，进而将进入背光源中的紫外光反射掉，进而降低了混光对薄膜晶体管器件的干扰，进而提高了迷你发光二极管的光利用率。\n\n附图说明\n\n[0023]为了更清楚地说明本申请中的技术方案，下面将对实施方式描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施方式，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0024]图1为本申请所提供的显示面板的结构剖视图。\n\n[0025]图2为本申请所提供的显示面板的制备方法的流程图。\n\n[0026]图3为本申请所提供的显示面板的制备方法的流程剖视图。\n\n具体实施方式\n\n[0027]请参阅图1，图1为本申请所提供的显示面板的结构剖视图。本申请提供一种显示面板10。所述显示面板10包括基板100、薄膜晶体管200、反射层300和迷你发光二极管400。\n\n[0028]所述基板100包括玻璃基板、石英基板和树脂基板等。\n\n[0029]所述薄膜晶体管200设置于所述基板100上。所述薄膜晶体管200包括栅极210、保护层220、有源层230、掺杂层240、源极250、漏极260和键合层270。所述栅极210设置于所述基板100上。所述栅极210的材料包括Al、Mo和Cu等。所述保护层220设置于所述栅极310和所述基板100上。所述有源层230设置于所述保护层220上。所述有源层230的材料包括非晶硅。所述掺杂层240包括P型掺杂区241和N型掺杂区242。所述P型掺杂区241位于所述有源层230的一侧。所述N型掺杂区242位于所述有源层230的另一侧。所述源极250和所述漏极260覆盖所述掺杂层240和有源层230上。所述源极250位于所述P型掺杂区241或N型掺杂区242上，并与所述保护层220的一侧相接触。所述漏极260位于所述P型掺杂区241或N型掺杂区242上，并与所述保护层220的另一侧相接触。所述键合层270与所述有源层230同层设置于所述保护层220上。\n\n[0030]所述反射层300设置于所述薄膜晶体管200上。所述反射层300的厚度为1000埃-10000埃。所述反射层300包括通孔301。所述通孔301贯穿所述反射层300以暴露所述薄膜晶体管200。所述通孔301贯穿所述反射层300以暴露所述键合层270及所述保护层220。所述反射层300包括若干第一分层310和若干第二分层320。每一所述第一分层310和每一所述第二分层320依次交替层叠设置。所述反射层300的分层层数不限制。如，所述反射层300的分层层数可以为2层、3层、4层、5层、6层和7层等。在本实施例中，所述反射层300的分层层数为2层，即，所述反射层300包括第一分层310和第二分层330。所述第一分层310的折射率和所述第二分层320的折射率不同。所述第一分层310及所述第二分层320的材料选自透明绝缘材料。\n\n[0031]在另一实施例中，所述第一分层310和所述第二分层320的厚度均为大于等于紫外光波长的四分之一。\n\n[0032]在本申请中，在薄膜晶体管上设置反射层，将反射层的分层厚度设置为大于等于紫外光波长的四分之一，可将进入背光源中的紫外光反射掉，降低了混光对薄膜晶体管的干扰，进而降低了混光对薄膜晶体管的I-V曲线向右移的影响。进而提高对光的利用率。\n\n[0033]在另一实施例中，所述第一分层310和第二分层320的材料选自二氧化硅、氮化硅、氧化铝、石墨烯、氟化锂、碳化硅、硫化锌和硅中的一种或几种组合。\n\n[0034]在另一实施例中，所述反射层300还包括过孔302。所述过孔302贯穿所述反射层300和所述保护层220以暴露所述栅极210。\n\n[0035]在另一实施例中，所述显示面板10还包括氧化铟锡层500。所述氧化铟锡层500填充于所述过孔302中以电连接所述栅极210。\n\n[0036]在本申请中，所述氧化铟锡层用于保护金手指。\n\n[0037]所述迷你发光二极管400设置于所述通孔301中以电连接所述薄膜晶体管200。所述迷你发光二极管为主动矩阵式迷你发光二极管。所述薄膜晶体管200驱动所述迷你发光二极管400。\n\n[0038]请参阅图2和图3，图2为本申请所提供的显示面板的制备方法的流程图。图3为本申请所提供的显示面板的制备方法的流程剖视图。本申请提供一种显示面板10的制备方法，包括：\n\n[0039]20、提供一基板100。\n\n[0040]所述基板100包括玻璃基板、石英基板和树脂基板等。\n\n[0041]30、在所述基板100上形成薄膜晶体管200。\n\n[0042]所述薄膜晶体管200包括栅极210、保护层220、有源层230、掺杂层240、源极250、漏极260和键合层270。\n\n[0043]具体地，在所述基板100上沉积栅极210材料，对所述栅极210材料进行蚀刻形成栅极210。所述栅极210的材料包括Al、Mo和Cu等。在所述栅极210和所述基板100上沉积所述保护层220材料，形成所述保护层220。在所述保护层220上沉积所述有源层230材料，对所述有源层230材料进行蚀刻，形成所述有源层230。所述有源层230的材料包括非晶硅。在所述有源层230上及所述保护层220上沉积掺杂层240材料，对所述掺杂层240进行蚀刻形成掺杂层240。所述掺杂层240位于所述有源层230上。所述掺杂层240包括P型掺杂区241和N型掺杂区242。所述P型掺杂区241位于所述有源层230的一侧。所述N型掺杂区242位于所述有源层230的另一侧。在所述掺杂层240上、有源层230和保护层220上沉积金属材料，对所述金属材料进行蚀刻，形成源极250、漏极260及键合层270。所述源极250覆盖所述掺杂层240的一侧及所述有源层230的一侧，并与所述保护层220的一侧相接触。所述漏极260覆盖所述掺杂层240的另一侧及所述有源层230的另一侧，并于所述保护层220的另一侧相接触。\n\n[0044]在另一实施例中，在所述保护层220上依次层叠沉积有源层230材料及掺杂层240材料，蚀刻形成有源层230及掺杂层240。\n\n[0045]在另一实施例中，在所述薄膜晶体管200上形成反射层300的步骤之后还包括对所述反射层300和所述保护层220进行蚀刻，形成通孔301和过孔302。所述过孔302贯穿所述反射层300及所述保护层220以暴露所述栅极210。所述通孔301贯穿所述反射层300以暴露所述键合层270及所述保护层220。所述键合层270用于固定所述迷你发光二极管，避免迷你二极管在制备或使用的过程中移位，进而影响显示面板的性能，且所述键合层270可以降低阻抗，并提高电子的迁移率。\n\n[0046]在另一实施例中，在所述反射层300和所述保护层220上形成通孔301和过孔302的步骤之后，还包括在所述过孔302中填充氧化铟锡层600。所述氧化铟锡层600填充于所述通孔400中以电连接所述栅极210。\n\n[0047]40、在所述基板100及所述薄膜晶体管200上形成反射层300，所述反射层300包括通孔301，所述通孔301贯穿所述反射层300以暴露所述薄膜晶体管200，所述反射层300包括依次交替层叠设置的若干第一分层310和若干第二分层320，所述第一分层310的材料与所述第二分层320的材料由两种不同折射率的材料形成。\n\n[0048]在所述薄膜晶体管200上设置依次交替层叠沉积两种不同的折射率材料形成若干第一分层310及若干第二分层320。若干所述第一分层310及若干所述第二分层320形成反射层300。所述反射层300的厚度为1000埃-10000埃。所述反射层300包括若干第一分层310和若干第二分层320。每一所述第一分层310和每一所述第二分层320依次交替层叠设置。所述反射层300的分层层数不限制。如，所述反射层300的分层层数可以为2层、3层、4层、5层、6层和7层等。在本实施例中，所述反射层300的分层层数为2层，即，所述反射层300包括第一分层310和第二分层320。所述第一分层310的折射率和所述第二分层320的折射率不同。所述第一分层310及所述第二分层320的材料选自透明绝缘材料。所述反射层300包括通孔301和过孔302。所述通孔301贯穿所述反射层300以暴露所述键合层270及所述保护层220。所述过孔302贯穿所述反射层300和所述保护层220以暴露所述栅极210。\n\n[0049]在另一实施例中，所述第一分层310和所述第二分层320的厚度均为大于等于紫外光波长的四分之一。\n\n[0050]在薄膜晶体管上设置反射层，将反射层的分层厚度设置为大于等于紫外光波长的四分之一，可将进入背光源中的紫外光反射掉，降低了混光对薄膜晶体管的干扰，进而降低了混光对薄膜晶体管的I-V曲线向右移的影响，即降低混光对薄膜晶体管的影响，并提高对迷你发光二极管的光利用率。\n\n[0051]在另一实施例中，所述第一分层310和第二分层320的材料选自二氧化硅、氮化硅、氧化铝、石墨烯、氟化锂、碳化硅、硫化锌和硅中的一种或几种组合。\n\n[0052]在另一实施例中，在所述基板100及所述薄膜晶体管200上形成反射层300，所述反射层300包括通孔301，所述通孔301贯穿所述反射层300以暴露所述薄膜晶体管200，所述反射层300包括依次交替层叠设置的若干第一分层310和若干第二分层320，所述第一分层310的材料与所述第二分层320的材料由两种不同折射率的材料形成的步骤之后还包括：在所述过孔302中及所述反射层300是上设置氧化铟锡层500并电连接所述栅极210。所述氧化铟锡层500用于保护金手指。\n\n[0053]50、在所述通孔301中设置迷你发光二极管400以电连接所述薄膜晶体管200。\n\n[0054]所述迷你发光二极管为主动矩阵式迷你发光二极管。所述薄膜晶体管200驱动所述迷你发光二极管400。\n\n[0055]本申请提供一种显示面板及其制备方法，所述显示面板包括基板、薄膜晶体管、反射层和迷你发光二极管，所述薄膜晶体管设置于所述基板上，所述反射层设置于所述薄膜晶体管上，所述反射层包括通孔，所述通孔贯穿所述反射层以暴露所述薄膜晶体管，所述反射层包括若干第一分层和若干第二分层，每一所述第一分层和每一所述第二分层依次交替层叠设置，所述第一分层的折射率和所述第二分层的折射率不同，所述迷你发光二极管设置于所述通孔中以电连接所述薄膜晶体管。在本申请中，将所述反射层设置于所述反射层上，进而将进入背光源中的紫外光反射掉，进而降低了混光对薄膜晶体管器件的干扰，进而提高了迷你发光二极管的光利用率。\n\n[0056]以上对本申请实施例所提供的一种显示面板及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种显示面板及其制备方法。\n\n背景技术\n\n[0002]目前，在玻璃基板上进行薄膜晶体管工艺驱动迷你发光二极管显示为一个新的领域，但由于玻璃基板透明，容易造成光的损失，且光直接照射在薄膜晶体管上会造成薄膜晶体管I-V曲线向右偏移严重，进而造成发光二极管灯损失严重，且发光二极管的光利用率减弱。\n\n发明内容\n\n[0003]本申请提供一种显示面板，以降低混光对薄膜晶体管的干扰及提高迷你发光二极管的光利用率。\n\n[0004]本申请提供一种显示面板，包括：\n\n[0005]基板；\n\n[0006]薄膜晶体管，所述薄膜晶体管设置于所述基板上；以及\n\n[0007]反射层，所述反射层覆盖所述薄膜晶体管及所述基板，所述反射层包括通孔，所述通孔贯穿所述反射层以暴露所述薄膜晶体管，所述反射层包括若干第一分层和若干第二分层，每一所述第一分层和每一所述第二分层依次交替层叠设置，每一所述第一分层及每一所述第二分层由两种不同的折射率材料形成；以及\n\n[0008]迷你发光二极管，所述迷你发光二极管设置于所述通孔中以电连接所述薄膜晶体管。\n\n[0009]在本申请所提供的显示面板中，所述反射层的厚度为1000埃-10000埃。\n\n[0010]在本申请所提供的显示面板中，所述每一第一分层及所述每一第二分层的厚度均为大于等于紫外光波长的四分之一。\n\n[0011]在本申请所提供的显示面板中，所述第一分层的材料及所述第二分层的材料选自透明绝缘材料。\n\n[0012]在本申请所提供的显示面板中，所述第一分层的材料及所述第二分层的材料选自二氧化硅、氮化硅、氧化铝、石墨烯、氟化锂、碳化硅、硫化锌和硅，所述第一种材料与所述第二种材料不同。\n\n[0013]本申请提供一种显示面板的制备方法，包括：\n\n[0014]提供一基板；\n\n[0015]在所述基板上形成薄膜晶体管；\n\n[0016]在所述基板及所述薄膜晶体管上形成反射层，所述反射层包括通孔，所述通孔贯穿所述反射层以暴露所述薄膜晶体管，所述反射层包括依次交替层叠设置的若干第一分层和若干第二分层，所述第一分层的材料与所述第二分层的材料由两种不同折射率的材料形成；以及\n\n[0017]在所述通孔中设置迷你发光二极管以电连接所述薄膜晶体管。\n\n[0018]在本申请所提供的显示面板的制备方法中，所述反射层的厚度为1000埃-10000埃。\n\n[0019]在本申请所提供的显示面板的制备方法中，所述每一第一分层及所述每一第二分层的厚度均为大于等于紫外光波长的四分之一。\n\n[0020]在本申请所提供的显示面板的制备方法中，所述第一分层的材料及所述第二分层的材料选自透明绝缘材料。\n\n[0021]在本申请所提供的显示面板的制备方法中，所述第一分层的材料及所述第二分层的材料选自二氧化硅、氮化硅、氧化铝、石墨烯、氟化锂、碳化硅、硫化锌和硅。\n\n[0022]本申请提供一种显示面板及其制备方法，所述显示面板包括基板、薄膜晶体管、反射层和迷你发光二极管，所述薄膜晶体管设置于所述基板上，所述反射层设置于所述薄膜晶体管上，所述反射层包括通孔，所述通孔贯穿所述反射层以暴露所述薄膜晶体管，所述反射层包括若干第一分层和若干第二分层，每一所述第一分层和每一所述第二分层依次交替层叠设置，所述第一分层的折射率和所述第二分层的折射率不同，所述迷你发光二极管设置于所述通孔中以电连接所述薄膜晶体管。在本申请中，将所述反射层设置于所述反射层上，进而将进入背光源中的紫外光反射掉，进而降低了混光对薄膜晶体管器件的干扰，进而提高了迷你发光二极管的光利用率。\n\n附图说明\n\n[0023]为了更清楚地说明本申请中的技术方案，下面将对实施方式描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施方式，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0024]图1为本申请所提供的显示面板的结构剖视图。\n\n[0025]图2为本申请所提供的显示面板的制备方法的流程图。\n\n[0026]图3为本申请所提供的显示面板的制备方法的流程剖视图。\n\n具体实施方式\n\n[0027]请参阅图1，图1为本申请所提供的显示面板的结构剖视图。本申请提供一种显示面板10。所述显示面板10包括基板100、薄膜晶体管200、反射层300和迷你发光二极管400。\n\n[0028]所述基板100包括玻璃基板、石英基板和树脂基板等。\n\n[0029]所述薄膜晶体管200设置于所述基板100上。所述薄膜晶体管200包括栅极210、保护层220、有源层230、掺杂层240、源极250、漏极260和键合层270。所述栅极210设置于所述基板100上。所述栅极210的材料包括Al、Mo和Cu等。所述保护层220设置于所述栅极310和所述基板100上。所述有源层230设置于所述保护层220上。所述有源层230的材料包括非晶硅。所述掺杂层240包括P型掺杂区241和N型掺杂区242。所述P型掺杂区241位于所述有源层230的一侧。所述N型掺杂区242位于所述有源层230的另一侧。所述源极250和所述漏极260覆盖所述掺杂层240和有源层230上。所述源极250位于所述P型掺杂区241或N型掺杂区242上，并与所述保护层220的一侧相接触。所述漏极260位于所述P型掺杂区241或N型掺杂区242上，并与所述保护层220的另一侧相接触。所述键合层270与所述有源层230同层设置于所述保护层220上。\n\n[0030]所述反射层300设置于所述薄膜晶体管200上。所述反射层300的厚度为1000埃-10000埃。所述反射层300包括通孔301。所述通孔301贯穿所述反射层300以暴露所述薄膜晶体管200。所述通孔301贯穿所述反射层300以暴露所述键合层270及所述保护层220。所述反射层300包括若干第一分层310和若干第二分层320。每一所述第一分层310和每一所述第二分层320依次交替层叠设置。所述反射层300的分层层数不限制。如，所述反射层300的分层层数可以为2层、3层、4层、5层、6层和7层等。在本实施例中，所述反射层300的分层层数为2层，即，所述反射层300包括第一分层310和第二分层330。所述第一分层310的折射率和所述第二分层320的折射率不同。所述第一分层310及所述第二分层320的材料选自透明绝缘材料。\n\n[0031]在另一实施例中，所述第一分层310和所述第二分层320的厚度均为大于等于紫外光波长的四分之一。\n\n[0032]在本申请中，在薄膜晶体管上设置反射层，将反射层的分层厚度设置为大于等于紫外光波长的四分之一，可将进入背光源中的紫外光反射掉，降低了混光对薄膜晶体管的干扰，进而降低了混光对薄膜晶体管的I-V曲线向右移的影响。进而提高对光的利用率。\n\n[0033]在另一实施例中，所述第一分层310和第二分层320的材料选自二氧化硅、氮化硅、氧化铝、石墨烯、氟化锂、碳化硅、硫化锌和硅中的一种或几种组合。\n\n[0034]在另一实施例中，所述反射层300还包括过孔302。所述过孔302贯穿所述反射层300和所述保护层220以暴露所述栅极210。\n\n[0035]在另一实施例中，所述显示面板10还包括氧化铟锡层500。所述氧化铟锡层500填充于所述过孔302中以电连接所述栅极210。\n\n[0036]在本申请中，所述氧化铟锡层用于保护金手指。\n\n[0037]所述迷你发光二极管400设置于所述通孔301中以电连接所述薄膜晶体管200。所述迷你发光二极管为主动矩阵式迷你发光二极管。所述薄膜晶体管200驱动所述迷你发光二极管400。\n\n[0038]请参阅图2和图3，图2为本申请所提供的显示面板的制备方法的流程图。图3为本申请所提供的显示面板的制备方法的流程剖视图。本申请提供一种显示面板10的制备方法，包括：\n\n[0039]20、提供一基板100。\n\n[0040]所述基板100包括玻璃基板、石英基板和树脂基板等。\n\n[0041]30、在所述基板100上形成薄膜晶体管200。\n\n[0042]所述薄膜晶体管200包括栅极210、保护层220、有源层230、掺杂层240、源极250、漏极260和键合层270。\n\n[0043]具体地，在所述基板100上沉积栅极210材料，对所述栅极210材料进行蚀刻形成栅极210。所述栅极210的材料包括Al、Mo和Cu等。在所述栅极210和所述基板100上沉积所述保护层220材料，形成所述保护层220。在所述保护层220上沉积所述有源层230材料，对所述有源层230材料进行蚀刻，形成所述有源层230。所述有源层230的材料包括非晶硅。在所述有源层230上及所述保护层220上沉积掺杂层240材料，对所述掺杂层240进行蚀刻形成掺杂层240。所述掺杂层240位于所述有源层230上。所述掺杂层240包括P型掺杂区241和N型掺杂区242。所述P型掺杂区241位于所述有源层230的一侧。所述N型掺杂区242位于所述有源层230的另一侧。在所述掺杂层240上、有源层230和保护层220上沉积金属材料，对所述金属材料进行蚀刻，形成源极250、漏极260及键合层270。所述源极250覆盖所述掺杂层240的一侧及所述有源层230的一侧，并与所述保护层220的一侧相接触。所述漏极260覆盖所述掺杂层240的另一侧及所述有源层230的另一侧，并于所述保护层220的另一侧相接触。\n\n[0044]在另一实施例中，在所述保护层220上依次层叠沉积有源层230材料及掺杂层240材料，蚀刻形成有源层230及掺杂层240。\n\n[0045]在另一实施例中，在所述薄膜晶体管200上形成反射层300的步骤之后还包括对所述反射层300和所述保护层220进行蚀刻，形成通孔301和过孔302。所述过孔302贯穿所述反射层300及所述保护层220以暴露所述栅极210。所述通孔301贯穿所述反射层300以暴露所述键合层270及所述保护层220。所述键合层270用于固定所述迷你发光二极管，避免迷你二极管在制备或使用的过程中移位，进而影响显示面板的性能，且所述键合层270可以降低阻抗，并提高电子的迁移率。\n\n[0046]在另一实施例中，在所述反射层300和所述保护层220上形成通孔301和过孔302的步骤之后，还包括在所述过孔302中填充氧化铟锡层600。所述氧化铟锡层600填充于所述通孔400中以电连接所述栅极210。\n\n[0047]40、在所述基板100及所述薄膜晶体管200上形成反射层300，所述反射层300包括通孔301，所述通孔301贯穿所述反射层300以暴露所述薄膜晶体管200，所述反射层300包括依次交替层叠设置的若干第一分层310和若干第二分层320，所述第一分层310的材料与所述第二分层320的材料由两种不同折射率的材料形成。\n\n[0048]在所述薄膜晶体管200上设置依次交替层叠沉积两种不同的折射率材料形成若干第一分层310及若干第二分层320。若干所述第一分层310及若干所述第二分层320形成反射层300。所述反射层300的厚度为1000埃-10000埃。所述反射层300包括若干第一分层310和若干第二分层320。每一所述第一分层310和每一所述第二分层320依次交替层叠设置。所述反射层300的分层层数不限制。如，所述反射层300的分层层数可以为2层、3层、4层、5层、6层和7层等。在本实施例中，所述反射层300的分层层数为2层，即，所述反射层300包括第一分层310和第二分层320。所述第一分层310的折射率和所述第二分层320的折射率不同。所述第一分层310及所述第二分层320的材料选自透明绝缘材料。所述反射层300包括通孔301和过孔302。所述通孔301贯穿所述反射层300以暴露所述键合层270及所述保护层220。所述过孔302贯穿所述反射层300和所述保护层220以暴露所述栅极210。\n\n[0049]在另一实施例中，所述第一分层310和所述第二分层320的厚度均为大于等于紫外光波长的四分之一。\n\n[0050]在薄膜晶体管上设置反射层，将反射层的分层厚度设置为大于等于紫外光波长的四分之一，可将进入背光源中的紫外光反射掉，降低了混光对薄膜晶体管的干扰，进而降低了混光对薄膜晶体管的I-V曲线向右移的影响，即降低混光对薄膜晶体管的影响，并提高对迷你发光二极管的光利用率。\n\n[0051]在另一实施例中，所述第一分层310和第二分层320的材料选自二氧化硅、氮化硅、氧化铝、石墨烯、氟化锂、碳化硅、硫化锌和硅中的一种或几种组合。\n\n[0052]在另一实施例中，在所述基板100及所述薄膜晶体管200上形成反射层300，所述反射层300包括通孔301，所述通孔301贯穿所述反射层300以暴露所述薄膜晶体管200，所述反射层300包括依次交替层叠设置的若干第一分层310和若干第二分层320，所述第一分层310的材料与所述第二分层320的材料由两种不同折射率的材料形成的步骤之后还包括：在所述过孔302中及所述反射层300是上设置氧化铟锡层500并电连接所述栅极210。所述氧化铟锡层500用于保护金手指。\n\n[0053]50、在所述通孔301中设置迷你发光二极管400以电连接所述薄膜晶体管200。\n\n[0054]所述迷你发光二极管为主动矩阵式迷你发光二极管。所述薄膜晶体管200驱动所述迷你发光二极管400。\n\n[0055]本申请提供一种显示面板及其制备方法，所述显示面板包括基板、薄膜晶体管、反射层和迷你发光二极管，所述薄膜晶体管设置于所述基板上，所述反射层设置于所述薄膜晶体管上，所述反射层包括通孔，所述通孔贯穿所述反射层以暴露所述薄膜晶体管，所述反射层包括若干第一分层和若干第二分层，每一所述第一分层和每一所述第二分层依次交替层叠设置，所述第一分层的折射率和所述第二分层的折射率不同，所述迷你发光二极管设置于所述通孔中以电连接所述薄膜晶体管。在本申请中，将所述反射层设置于所述反射层上，进而将进入背光源中的紫外光反射掉，进而降低了混光对薄膜晶体管器件的干扰，进而提高了迷你发光二极管的光利用率。\n\n[0056]以上对本申请实施例所提供的一种显示面板及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10788, 23842, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种背光模组及其制备方法与显示装置。\n\n背景技术\n\n[0002]Mini LED(Mini Light-Emitting Diode，微型发光二极管)背光技术，相较传统的LED背光技术，直接采用RGB三色LED作为背光源，具有更优的色彩完整性与色域范围，且Mini LED比传统LED的尺寸更小，能够实现更加精细化控制，使得显示面板具备更高的对比度。因此，Mini LED背光技术具有较大的发展潜力，有望大规模应用于显示面板中。\n\n[0003]Mini LED背光至显示屏的距离通常取决于LED芯片的间距与LED发光半值角，LED芯片的间距越小，或是LED发光半值角越小，均可使得背光光源至显示屏的间距越小，以此减小显示器的厚度。但，LED为朗伯型光源，即180度发光，具有较大的发光半值角，为了降低LED的发光半值角，通常在LED上设置减小光线发散角的光学透镜。在现有的制备方法中，该光学透镜通常通过模压与打磨等工艺进行制备，其生产效率较低不利于大规模的产业化生产。\n\n发明内容\n\n[0004]为解决上述问题，第一方面，本发明提供了一种背光模组的制备方法，所述方法包括：\n\n[0005]S10:提供一基板，在所述基板上形成多个微型发光二极管；\n\n[0006]S20:通过喷墨打印工艺，将墨水分别打印至多个微型发光二极管上，形成光学液态层；\n\n[0007]S30:对所述光学液态层进行固化工艺，以形成微型透镜，所述微型透镜使得所述型发光二极管的发光光线收敛。\n\n[0008]进一步地，在所述步骤S20前，对所述微型发光二极管的表面进行等离子体表面处理工艺，以增大所述微型发光二极管表面的粗糙度。\n\n[0009]进一步地，所述墨水包括聚合物单体以及有机溶剂，所述聚合物单体经所述固化工艺形成透明且耐紫外线的聚合物。\n\n[0010]进一步地，所述微型透镜的材料选自聚甲基丙烯酸酯、聚碳酸酯以及有机硅胶中的至少一者。\n\n[0011]进一步地，所述微型透镜的折射率大于所述微型发光二极管的折射率。\n\n[0012]进一步地，所述通过喷墨打印工艺，将墨水分别打印至多个微型发光二极管上的步骤包括将喷墨打印头对准于所述微型发光二极管的上方，再向所述微型发光二极管上滴加定量的所述墨水，其中，通过控制所述喷墨打印头的打印电压，调整所述墨水滴落至所述微型发光二极管上的速度。\n\n[0013]进一步地，所述喷墨打印头可相对所述微型发光二极管上下移动，通过调整所述喷墨打印头与所述微型发光二极管的间距，调整所述墨水滴落至所述微型发光二极管上的所费时间。\n\n[0014]进一步地，所述喷墨打印头上包括加热单元，通过所述加热单元调整所述墨水的温度，以调整所述墨水的黏度。\n\n[0015]另一方面，本发明还提供了一种背光模组，由上述的背光模组的制备方法制备而得。\n\n[0016]另一方面，本发明还提供了一种显示装置，所述显示装置包括上述的背光模组。\n\n[0017]有益效果：本发明提供一种背光模组及其制备方法与显示装置，在所提供的制备方法中，通过喷墨打印工艺，在背光模组的微型发光二极管上形成微型透镜结构，以减小发光二极管的发光半值角，从而使得背光光源至显示屏的间距越小，以此减小显示器的厚度。其中，通过喷墨打印工艺形成所述微型透镜结构，相较常规的模压以及打磨工艺，具有更高的生产效率，并能节省材料降低成本，随着喷墨打印技术日趋成熟，具备大规模工业化生产的能力。\n\n附图说明\n\n[0018]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1是本发明实施例提供的一种背光模组的制备方法的文字流程示意图；\n\n[0020]图2A-2C是本发明实施例提供的一种背光模组的制备方法的结构流程示意图；\n\n[0021]图3是本发明实施例提供的一种背光模组的制备方法中的原理说明图。\n\n具体实施方式\n\n[0022]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0023]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0024]在本申请中，“示例性”一词用来表示“用作例子、例证或说明”。本申请中被描述为“示例性”的任何实施例不一定被解释为比其它实施例更优选或更具优势。为了使本领域任何技术人员能够实现和使用本发明，给出了以下描述。在以下描述中，为了解释的目的而列出了细节。应当明白的是，本领域普通技术人员可以认识到，在不使用这些特定细节的情况下也可以实现本发明。在其它实例中，不会对公知的结构和过程进行详细阐述，以避免不必要的细节使本发明的描述变得晦涩。因此，本发明并非旨在限于所示的实施例，而是与符合本申请所公开的原理和特征的最广范围相一致。\n\n[0025]本发明实施例提供一种背光模组的制备方法，结合图1提供的该背光模组的制备方法的文字流程示意图，以及图2A-2C提供的该背光模组的制备方法的结构流程示意图，进行详细说明，具体地，所述方法包括如下步骤：\n\n[0026]S10:提供一基板10，在所述基板上形成多个微型发光二极管20，即形成如图2A所示的结构，其中，所述多个微型发光二极管20通常阵列排布于所述基板上，各自独立地实现发光，以做到精细的分区调光；\n\n[0027]S20:通过喷墨打印工艺，将墨水分别打印至所述多个微型发光二极管20上，形成光学液态层30，此处，所述微型发光二极管20的尺寸通常较小且排布较密，而喷墨打印工艺能实现较高的精度，从而能将所述墨水定量且精准的打印至所述微型发光二极管20上；\n\n[0028]S30:对所述光学液态层30进行固化工艺，以形成微型透镜40，所述微型透镜40使得下方的所述微型发光二极管20的发光光线收敛，即，使微型发光二极管20发光光线更加集中，发散角更小，从而使得所述微型发光二极管至显示面板的距离更小，即实现显示器件减薄，具体原理如下述解释：\n\n[0029]请参见图3，将所制备的背光模组应用于显示面板50时，所述微型发光二极管20至所述显示面板50的间距为z，相邻的所述微型发光二极管之间的间距为d，所述微型发光二极管20的发光半值角(轴向强度值一半的方向与发光轴向)的夹角)为α，当满足如下公式时，所述背光模组照射与所述显示面板上的光斑照度均匀性最佳：\n\n[0030]\n\n[0031]由上述公式可知，在所述微型发光二极管之间的间距为d一定时，所述发光半值角α越小，所述微型发光二极管至所述显示面板的间距z也越小。\n\n[0032]在本实施例中，通过喷墨打印工艺，可在所述微型发光二极管上精准的形成微型透镜结构，相较于常规的模压以及打磨工艺，具有更高的生产效率，并能节省材料降低成本，随着喷墨打印技术日趋成熟，具备大规模工业化生产的能力。\n\n[0033]在本实施例中，所述墨水包括聚合物单体以及有机溶剂，当然，在实际应用中，通常还可包括引发剂或催化剂，促使所述聚合物单体的聚合效率与转化率。\n\n[0034]其中，所述聚合物单体经所述固化工艺，聚合形成聚合物，即为构成所述微型透镜的材料，所述微型透镜的材料选自透明且耐紫外线的聚合物，一方面需为透明材料，避免吸收所述微型发光二极管所发出的光线，造成背光亮度损失，另一方面，需为耐紫外光的材料，避免发生紫外老化从而影响光学性能。\n\n[0035]示例性地，所述微型透镜的材料可为聚甲基丙烯酸酯、聚碳酸酯以及有机硅胶中的至少一者，例如，当所述微型透镜的材料为有机硅胶时，喷墨打印的墨水包括甲基三烷氧基硅烷，乙酸，水，异丙醇以及聚醚硅油。\n\n[0036]在一些实施例中，所述墨水表面张力的大小为影响所形成光学液态层的形貌的影响因素之一，基于此，所述有机溶剂可根据实际需求进行选择，不同的有机溶剂具有不同的表面张力，从而可制得不同表面张力的所述墨水，以实现所需的光学液态层。\n\n[0037]另外，基于所述微型发光二极管的表面粗糙度对所述墨水的表面张力有着较大影响，在一些实施例中，在所述步骤S20前，通常还对所述微型发光二极管的表面进行等离子体表面处理工艺，以增大所述微型发光二极管表面的粗糙度，从而增大墨水在微型发光二极管上的表面张力，例如，使用四氟化碳作为工艺气体对所述微型发光二极管的表面进行等离子体轰击，一方面所述微型发光二极管表面的粗糙度，还可在所述微型发光二极管的表面引入非极性基团，以进一步增大其表面张力。\n\n[0038]综上，通过选择合适的有机溶剂以及增设等离子体表面处理工艺，使得所述墨水在所述微型发光二极管上的表面张力为70-80mN/m，以实现最佳的微型透镜的形貌。\n\n[0039]在一些实施例中，所述墨水密度的大小为影响所形成光学液态层的形貌的影响因素之一，基于此，通过调整各成分的比例，使得所述墨水的密度为1.3-1.7g/cm3，以实现最佳的微型透镜的形貌。\n\n[0040]另外，所述微型透镜的折射率大于所述微型发光二极管的折射率，根据光的折射原理，当所述微型透镜的折射率大于所述微型发光二极管(最上层膜层)的折射率时，入射角大于折射角，从而将微型发光二极管的出射光线收敛。\n\n[0041]在一实施例中，所形成的所述微型透镜为类似半球形的结构，微型发光二极管所发出的光线从微型透镜上的半球形表面射出时，还会使得微型发光二极管的出射光线进一步收敛。\n\n[0042]在一些实施例中，所述通过喷墨打印工艺，将墨水分别打印至多个微型发光二极管上的步骤包括将喷墨打印头对准于所述微型发光二极管的上方，再向所述微型发光二极管滴加定量的所述墨水，其中，通过控制所述喷墨打印头(图中未示出)的打印电压，调整所述墨水滴落至所述微型发光二极管上的速度。所述墨水滴落于所述微型发光二极管上的速度为所述光学液态层形貌的影响因子之一，进而影响固化后所形成的微型透镜的形貌，故，在所述喷墨打印工艺中，根据实际的工艺需求，调整所述打印电压，以获得所需的微型透镜的形貌。\n\n[0043]另，根据重力加速度原理，所述墨水从高度不同的地方滴落至所述微型发光二极管上所费时间不同，则速度也不同，根据这一原理，在一些实施例中，所述喷墨打印头可相对所述微型发光二极管上下移动，通过调整所述喷墨打印头与所述微型发光二极管的间距，从而调整所述墨水滴落至所述微型发光二极管上的所费时间，即，在所述喷墨打印工艺中，根据实际的工艺需求，调整所述喷墨打印头打印时的高度，以获得所需的微型透镜的形貌。\n\n[0044]综上，通过综合调控所述喷墨打印头的打印电压以及所述喷墨打印头与所述微型发光二极管的间距，使得所述墨水滴落至所述微型发光二极管表面的速度为1.8-2.2m/s，以实现最佳的微型透镜的形貌。\n\n[0045]在一些实施例中，所述喷墨打印头上包括加热单元，可对待打印的墨水进行加热，通过所述加热单元调整所述墨水的温度，以调整所述墨水的黏度，一般情况下，温度越高，所述墨水的黏度越小，不同黏度的墨水滴加在所述微型发光二极管上的形貌不同，从而使得所形成的微型透镜的形貌也不同，即，在所述喷墨打印工艺中，通常通过所述加热单元，将所述墨水的温度的墨水调控至70-120℃，使得所述墨水的黏度为0.4-0.5cp。\n\n[0046]综上所述，所述光学液态层的形貌由所述墨水滴落至微型发光二极管表面的速度，所述墨水在微型发光二极管上的表面张力，所述墨水的密度以及黏度共同决定，经验证，在本实施例所提供的背光模组的制备方法，将所述墨水滴落至微型发光二极管表面的速度设为1.8-2.2m/s，所述墨水在微型发光二极管上的表面张力设为70-80mN/m，所述墨水的密度设为1.3-1.7g/cm3，以及所述墨水的黏度设0.4-0.5cp，以得到最佳的微型透镜的形貌。\n\n[0047]需要说明的是，上述背光模组实施例中仅描述了上述结构，可以理解的是，除了上述结构之外，还可以根据需要包括任何其他的必要结构，具体此处不作限定。\n\n[0048]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见上文针对其他实施例的详细描述，此处不再赘述。\n\n[0049]以上对本发明实施例所提供的一种背光模组及其制备方法与显示装置进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种背光模组及其制备方法与显示装置。\n\n背景技术\n\n[0002]Mini LED(Mini Light-Emitting Diode，微型发光二极管)背光技术，相较传统的LED背光技术，直接采用RGB三色LED作为背光源，具有更优的色彩完整性与色域范围，且Mini LED比传统LED的尺寸更小，能够实现更加精细化控制，使得显示面板具备更高的对比度。因此，Mini LED背光技术具有较大的发展潜力，有望大规模应用于显示面板中。\n\n[0003]Mini LED背光至显示屏的距离通常取决于LED芯片的间距与LED发光半值角，LED芯片的间距越小，或是LED发光半值角越小，均可使得背光光源至显示屏的间距越小，以此减小显示器的厚度。但，LED为朗伯型光源，即180度发光，具有较大的发光半值角，为了降低LED的发光半值角，通常在LED上设置减小光线发散角的光学透镜。在现有的制备方法中，该光学透镜通常通过模压与打磨等工艺进行制备，其生产效率较低不利于大规模的产业化生产。\n\n发明内容\n\n[0004]为解决上述问题，第一方面，本发明提供了一种背光模组的制备方法，所述方法包括：\n\n[0005]S10:提供一基板，在所述基板上形成多个微型发光二极管；\n\n[0006]S20:通过喷墨打印工艺，将墨水分别打印至多个微型发光二极管上，形成光学液态层；\n\n[0007]S30:对所述光学液态层进行固化工艺，以形成微型透镜，所述微型透镜使得所述型发光二极管的发光光线收敛。\n\n[0008]进一步地，在所述步骤S20前，对所述微型发光二极管的表面进行等离子体表面处理工艺，以增大所述微型发光二极管表面的粗糙度。\n\n[0009]进一步地，所述墨水包括聚合物单体以及有机溶剂，所述聚合物单体经所述固化工艺形成透明且耐紫外线的聚合物。\n\n[0010]进一步地，所述微型透镜的材料选自聚甲基丙烯酸酯、聚碳酸酯以及有机硅胶中的至少一者。\n\n[0011]进一步地，所述微型透镜的折射率大于所述微型发光二极管的折射率。\n\n[0012]进一步地，所述通过喷墨打印工艺，将墨水分别打印至多个微型发光二极管上的步骤包括将喷墨打印头对准于所述微型发光二极管的上方，再向所述微型发光二极管上滴加定量的所述墨水，其中，通过控制所述喷墨打印头的打印电压，调整所述墨水滴落至所述微型发光二极管上的速度。\n\n[0013]进一步地，所述喷墨打印头可相对所述微型发光二极管上下移动，通过调整所述喷墨打印头与所述微型发光二极管的间距，调整所述墨水滴落至所述微型发光二极管上的所费时间。\n\n[0014]进一步地，所述喷墨打印头上包括加热单元，通过所述加热单元调整所述墨水的温度，以调整所述墨水的黏度。\n\n[0015]另一方面，本发明还提供了一种背光模组，由上述的背光模组的制备方法制备而得。\n\n[0016]另一方面，本发明还提供了一种显示装置，所述显示装置包括上述的背光模组。\n\n[0017]有益效果：本发明提供一种背光模组及其制备方法与显示装置，在所提供的制备方法中，通过喷墨打印工艺，在背光模组的微型发光二极管上形成微型透镜结构，以减小发光二极管的发光半值角，从而使得背光光源至显示屏的间距越小，以此减小显示器的厚度。其中，通过喷墨打印工艺形成所述微型透镜结构，相较常规的模压以及打磨工艺，具有更高的生产效率，并能节省材料降低成本，随着喷墨打印技术日趋成熟，具备大规模工业化生产的能力。\n\n附图说明\n\n[0018]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1是本发明实施例提供的一种背光模组的制备方法的文字流程示意图；\n\n[0020]图2A-2C是本发明实施例提供的一种背光模组的制备方法的结构流程示意图；\n\n[0021]图3是本发明实施例提供的一种背光模组的制备方法中的原理说明图。\n\n具体实施方式\n\n[0022]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0023]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0024]在本申请中，“示例性”一词用来表示“用作例子、例证或说明”。本申请中被描述为“示例性”的任何实施例不一定被解释为比其它实施例更优选或更具优势。为了使本领域任何技术人员能够实现和使用本发明，给出了以下描述。在以下描述中，为了解释的目的而列出了细节。应当明白的是，本领域普通技术人员可以认识到，在不使用这些特定细节的情况下也可以实现本发明。在其它实例中，不会对公知的结构和过程进行详细阐述，以避免不必要的细节使本发明的描述变得晦涩。因此，本发明并非旨在限于所示的实施例，而是与符合本申请所公开的原理和特征的最广范围相一致。\n\n[0025]本发明实施例提供一种背光模组的制备方法，结合图1提供的该背光模组的制备方法的文字流程示意图，以及图2A-2C提供的该背光模组的制备方法的结构流程示意图，进行详细说明，具体地，所述方法包括如下步骤：\n\n[0026]S10:提供一基板10，在所述基板上形成多个微型发光二极管20，即形成如图2A所示的结构，其中，所述多个微型发光二极管20通常阵列排布于所述基板上，各自独立地实现发光，以做到精细的分区调光；\n\n[0027]S20:通过喷墨打印工艺，将墨水分别打印至所述多个微型发光二极管20上，形成光学液态层30，此处，所述微型发光二极管20的尺寸通常较小且排布较密，而喷墨打印工艺能实现较高的精度，从而能将所述墨水定量且精准的打印至所述微型发光二极管20上；\n\n[0028]S30:对所述光学液态层30进行固化工艺，以形成微型透镜40，所述微型透镜40使得下方的所述微型发光二极管20的发光光线收敛，即，使微型发光二极管20发光光线更加集中，发散角更小，从而使得所述微型发光二极管至显示面板的距离更小，即实现显示器件减薄，具体原理如下述解释：\n\n[0029]请参见图3，将所制备的背光模组应用于显示面板50时，所述微型发光二极管20至所述显示面板50的间距为z，相邻的所述微型发光二极管之间的间距为d，所述微型发光二极管20的发光半值角(轴向强度值一半的方向与发光轴向)的夹角)为α，当满足如下公式时，所述背光模组照射与所述显示面板上的光斑照度均匀性最佳：\n\n[0030]\n\n[0031]由上述公式可知，在所述微型发光二极管之间的间距为d一定时，所述发光半值角α越小，所述微型发光二极管至所述显示面板的间距z也越小。\n\n[0032]在本实施例中，通过喷墨打印工艺，可在所述微型发光二极管上精准的形成微型透镜结构，相较于常规的模压以及打磨工艺，具有更高的生产效率，并能节省材料降低成本，随着喷墨打印技术日趋成熟，具备大规模工业化生产的能力。\n\n[0033]在本实施例中，所述墨水包括聚合物单体以及有机溶剂，当然，在实际应用中，通常还可包括引发剂或催化剂，促使所述聚合物单体的聚合效率与转化率。\n\n[0034]其中，所述聚合物单体经所述固化工艺，聚合形成聚合物，即为构成所述微型透镜的材料，所述微型透镜的材料选自透明且耐紫外线的聚合物，一方面需为透明材料，避免吸收所述微型发光二极管所发出的光线，造成背光亮度损失，另一方面，需为耐紫外光的材料，避免发生紫外老化从而影响光学性能。\n\n[0035]示例性地，所述微型透镜的材料可为聚甲基丙烯酸酯、聚碳酸酯以及有机硅胶中的至少一者，例如，当所述微型透镜的材料为有机硅胶时，喷墨打印的墨水包括甲基三烷氧基硅烷，乙酸，水，异丙醇以及聚醚硅油。\n\n[0036]在一些实施例中，所述墨水表面张力的大小为影响所形成光学液态层的形貌的影响因素之一，基于此，所述有机溶剂可根据实际需求进行选择，不同的有机溶剂具有不同的表面张力，从而可制得不同表面张力的所述墨水，以实现所需的光学液态层。\n\n[0037]另外，基于所述微型发光二极管的表面粗糙度对所述墨水的表面张力有着较大影响，在一些实施例中，在所述步骤S20前，通常还对所述微型发光二极管的表面进行等离子体表面处理工艺，以增大所述微型发光二极管表面的粗糙度，从而增大墨水在微型发光二极管上的表面张力，例如，使用四氟化碳作为工艺气体对所述微型发光二极管的表面进行等离子体轰击，一方面所述微型发光二极管表面的粗糙度，还可在所述微型发光二极管的表面引入非极性基团，以进一步增大其表面张力。\n\n[0038]综上，通过选择合适的有机溶剂以及增设等离子体表面处理工艺，使得所述墨水在所述微型发光二极管上的表面张力为70-80mN/m，以实现最佳的微型透镜的形貌。\n\n[0039]在一些实施例中，所述墨水密度的大小为影响所形成光学液态层的形貌的影响因素之一，基于此，通过调整各成分的比例，使得所述墨水的密度为1.3-1.7g/cm3，以实现最佳的微型透镜的形貌。\n\n[0040]另外，所述微型透镜的折射率大于所述微型发光二极管的折射率，根据光的折射原理，当所述微型透镜的折射率大于所述微型发光二极管(最上层膜层)的折射率时，入射角大于折射角，从而将微型发光二极管的出射光线收敛。\n\n[0041]在一实施例中，所形成的所述微型透镜为类似半球形的结构，微型发光二极管所发出的光线从微型透镜上的半球形表面射出时，还会使得微型发光二极管的出射光线进一步收敛。\n\n[0042]在一些实施例中，所述通过喷墨打印工艺，将墨水分别打印至多个微型发光二极管上的步骤包括将喷墨打印头对准于所述微型发光二极管的上方，再向所述微型发光二极管滴加定量的所述墨水，其中，通过控制所述喷墨打印头(图中未示出)的打印电压，调整所述墨水滴落至所述微型发光二极管上的速度。所述墨水滴落于所述微型发光二极管上的速度为所述光学液态层形貌的影响因子之一，进而影响固化后所形成的微型透镜的形貌，故，在所述喷墨打印工艺中，根据实际的工艺需求，调整所述打印电压，以获得所需的微型透镜的形貌。\n\n[0043]另，根据重力加速度原理，所述墨水从高度不同的地方滴落至所述微型发光二极管上所费时间不同，则速度也不同，根据这一原理，在一些实施例中，所述喷墨打印头可相对所述微型发光二极管上下移动，通过调整所述喷墨打印头与所述微型发光二极管的间距，从而调整所述墨水滴落至所述微型发光二极管上的所费时间，即，在所述喷墨打印工艺中，根据实际的工艺需求，调整所述喷墨打印头打印时的高度，以获得所需的微型透镜的形貌。\n\n[0044]综上，通过综合调控所述喷墨打印头的打印电压以及所述喷墨打印头与所述微型发光二极管的间距，使得所述墨水滴落至所述微型发光二极管表面的速度为1.8-2.2m/s，以实现最佳的微型透镜的形貌。\n\n[0045]在一些实施例中，所述喷墨打印头上包括加热单元，可对待打印的墨水进行加热，通过所述加热单元调整所述墨水的温度，以调整所述墨水的黏度，一般情况下，温度越高，所述墨水的黏度越小，不同黏度的墨水滴加在所述微型发光二极管上的形貌不同，从而使得所形成的微型透镜的形貌也不同，即，在所述喷墨打印工艺中，通常通过所述加热单元，将所述墨水的温度的墨水调控至70-120℃，使得所述墨水的黏度为0.4-0.5cp。\n\n[0046]综上所述，所述光学液态层的形貌由所述墨水滴落至微型发光二极管表面的速度，所述墨水在微型发光二极管上的表面张力，所述墨水的密度以及黏度共同决定，经验证，在本实施例所提供的背光模组的制备方法，将所述墨水滴落至微型发光二极管表面的速度设为1.8-2.2m/s，所述墨水在微型发光二极管上的表面张力设为70-80mN/m，所述墨水的密度设为1.3-1.7g/cm3，以及所述墨水的黏度设0.4-0.5cp，以得到最佳的微型透镜的形貌。\n\n[0047]需要说明的是，上述背光模组实施例中仅描述了上述结构，可以理解的是，除了上述结构之外，还可以根据需要包括任何其他的必要结构，具体此处不作限定。\n\n[0048]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见上文针对其他实施例的详细描述，此处不再赘述。\n\n[0049]以上对本发明实施例所提供的一种背光模组及其制备方法与显示装置进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10789, 23843, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种背光模组结构、背光模组结构制程方法及显示面板。\n\n背景技术\n\n[0002]因在液晶显示器(Liquid Crystal Display,LCD)显示屏中使用miniLED技术，具备高亮度高对比度的优点，可以媲美有机电致发光二极管(OrganicLight-EmittingDiode,OLED)显示技术，越来越多的液晶屏产业链的企业投入到miniLED背光模组(backlight unit,BLU)技术开发中来，而为了实现更低的功耗，更漂亮的光学品味，使用miniLED基板作为光源的背光，往往需要使用比常规侧入式BLU数量更多，功能特性更多光学膜片，比如常规侧入式BLU的导光板(light guide plate,LGP)上方一般堆叠3～4层光学膜片，而miniLED BLU的导光板上方经常需要堆叠7～8层光学膜片。这就导致一个问题，miniLEDBLU的光学膜片使用数量较多，不易进行膜片的固定设计。\n\n发明内容\n\n[0003]本申请实施例提供一种背光模组结构、背光模组结构制程方法及显示面板，能够应用于多层膜片堆叠架构的微型发光二极管背光模组的膜片固定。\n\n[0004]本申请提供一种背光模组结构，包括：\n\n[0005]背光层，所述背光层包括相对设置的第一面和第二面；\n\n[0006]胶框，所述胶框包括相对设置的第三面和第四面以及垂直于所述第三面和所述第四面相对设置的第一侧面和第二侧面，所述胶框设置在所述背光层垂直于所述第一面或所述第二面的一侧面，所述第一侧面平齐所述第二面设置，且所述第三面被所述背光层部分覆盖，所述第一侧面设置有至少一个缺口，所述缺口用于设置电路结构，所述第二侧面设置有阶梯式凹槽结构，所述阶梯式凹槽结构至少有三层阶梯；\n\n[0007]光学膜片，所述光学膜片至少包括三层，所述光学膜片层叠设置在所述第一面上，所述光学膜片的一侧设置有膜片延伸部，所述膜片延伸部通过所述阶梯式凹槽结构与所述胶框连接。\n\n[0008]在一些实施例中，所述阶梯式凹槽结构的阶梯数与所述光学膜片层数相对应。\n\n[0009]在一些实施例中，所述阶梯式凹槽结构的阶梯宽度大于或等于每层所述光学膜片的膜片延伸部宽度。\n\n[0010]在一些实施例中，还包括胶层，所述胶层设置在所述膜片延伸部与所述阶梯式凹槽结构之间，所述胶层连接所述膜片延伸部与所述阶梯式凹槽结构。\n\n[0011]在一些实施例中，所述阶梯式凹槽结构每层阶梯的截面积随凹槽深度增大而减小。\n\n[0012]在一些实施例中，所述缺口设置有两个，所述缺口设置在所述阶梯式凹槽结构两侧。\n\n[0013]在一些实施例中，所述背光层包括灯板和光源，所述光源设置在所述灯板靠近所述光学膜片的一侧，所述灯板为柔性电路板、印制电路板或树脂基板，所述光源为迷你发光二极管或微型发光二极管。\n\n[0014]在一些实施例中，所述光学膜片包括扩散膜、量子点膜、导光膜、反射膜或增亮膜中的一层或多层。\n\n[0015]在一些实施例中，所述背光层与所述胶框通过胶层连接或所述背光层与所述胶框为一体结构。\n\n[0016]本申请实施例提供一种显示面板，包括以上所述的背光模组结构。\n\n[0017]本申请实施例所提供的背光模组结构，包括：背光层、胶框以及光学膜片。所述背光层包括相对设置的第一面和第二面。所述胶框包括相对设置的第三面和第四面以及垂直于所述第三面和所述第四面相对设置的第一侧面和第二侧面，所述胶框设置在所述背光层垂直于所述第一面或所述第二面的一侧面，所述第一侧面平齐所述第二面设置，且所述第三面被所述背光层部分覆盖，所述第一侧面设置有至少一个缺口，所述缺口用于设置电路结构，所述第二侧面设置有阶梯式凹槽结构，所述阶梯式凹槽结构至少有三层阶梯。所述光学膜片至少包括三层，所述光学膜片层叠设置在所述第一面上，所述光学膜片的一侧设置有膜片延伸部，所述膜片延伸部通过所述阶梯式凹槽结构与所述胶框连接。通过在胶框上设置阶梯式凹槽结构，可以方便的将多层膜片固定在胶框上，组装便捷、加工方便，并且空间利用率高，能够最大限度的利用一侧边框的空间，进而能够在其他边框进行更窄的设计，适应了全面屏设计的要求。\n\n附图说明\n\n[0018]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1为本申请实施例提供的背光模组结构的第一种结构示意图；\n\n[0020]图2为本申请实施例提供的背光模组结构的第二种结构示意图；\n\n[0021]图3为本申请实施例提供的胶框的第一种结构示意图；\n\n[0022]图4为本申请实施例提供的胶框的第二种结构示意图；\n\n[0023]图5为本申请实施例提供的光学膜层的一种结构示意图；\n\n[0024]图6为本申请实施例提供的胶框与光学膜片的一种连接示意图；\n\n[0025]图7为本申请实施例提供的显示面板的一种结构示意图。\n\n具体实施方式\n\n[0026]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0027]需要说明的是，在本申请的描述中，需要理解的是，术语“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。\n\n[0028]本申请实施例提供一种背光模组结构、背光模组结构制程方法及显示面板，以下对背光模组结构做详细介绍。\n\n[0029]请参阅图1，图1是本申请实施例提供的背光模组结构10的第一种结构示意图。该背光模组结构10包括背光层101、胶框102以及光学膜片103。背光层101包括相对设置的第一面101a和第二面101b。胶框102包括相对设置的第三面102a和第四面102b以及垂直于第三面102a和第四面102b相对设置的第一侧面102c和第二侧面102d，胶框102设置在背光层101垂直于第一面101a或第二面101b的一侧面，第一侧面102c平齐第二面101b设置，且第三面102a被背光层101部分覆盖，第一侧面102c设置有至少一个缺口，缺口用于设置电路结构，第二侧面102d设置有阶梯式凹槽结构，阶梯式凹槽结构至少有三层阶梯。光学膜片103至少包括三层，光学膜片103层叠设置在第一面101a上，光学膜片103的一侧设置有膜片延伸部，膜片延伸部通过阶梯式凹槽结构与胶框102连接。本申请实施例提供的背光模组结构10通过设置阶梯式凹槽结构，能够便于进行三层以上的膜片固定，例如七层、八层光学膜片103的膜片固定，能够解决复杂膜片结构不易固定的问题。本申请实施例以三层光学膜片103为示例进行说明，但其他实施方式中光学膜片103的层数不做限制。图1中光学膜片103包括第一光学膜片1031、第二光学膜片1032及第三光学膜片1033。\n\n[0030]需要说明的是，第一面101a可以为背光层101的上表面，第二面101b可以为背光层101的下表面。当然，第一面101a也可以为背光层101的下表面，第二面101b可以为背光层101的上表面。本申请实施例中不做特殊说明的情况下，默认为第一面101a为背光层101的上表面，第二面101b为背光层101的下表面。胶框102的第三面102a和第四面102b以及垂直于第三面102a和第四面102b相对设置的第一侧面102c和第二侧面102d也同理。\n\n[0031]其中，请参阅图2，图2是本申请实施例提供的背光模组结构10的第二种结构示意图。背光层101包括灯板1011和光源1012，光源1012设置在灯板1011靠近光学膜片103的一侧，图2中光源1012覆盖整个灯板1011作为示例，具体的灯板1011的设置方式不做限制。灯板1011为柔性电路板、印制电路板或树脂基板，光源1012为迷你发光二极管或微型发光二极管。\n\n[0032]其中，背光层101与胶框102通过胶层连接或背光层101与胶框102为一体结构。胶层为光敏胶、双面胶或防水胶中任一种。\n\n[0033]其中，请参阅图3，图3是本申请实施例提供的胶框102的第一种结构示意图，第一侧面102c设置有至少一个缺口1021，缺口1021用于设置电路结构，第二侧面102d设置有阶梯式凹槽结构1022，阶梯式凹槽结构1022至少有三层阶梯。具体地，电路结构为刚性印制电路板(Printed Circuit Board,PCB)、柔性电路板(Flexible Printed Circuit,FPC)或柔性印制电路板(Flexible Printed Circuit Board,FPCB)中的任一种。图3以阶梯式凹槽结构1022阶梯层数为三层作为示例，阶梯式凹槽结构1022的阶梯层数还可以为四层、五层、六层、七层或八层。阶梯式凹槽结构1022的阶梯数与光学膜片103层数相对应，例如，光学膜层103设置有三层，则阶梯式凹槽结构1022设置三层阶梯用于对应放置光学膜层103的膜片延伸部。缺口1021设置有两个，缺口1021设置在阶梯式凹槽结构1022两侧。缺口1021还可以设置为三个、四个或五个，缺口1021的个数与背光模组中电路结构数量相对应。\n\n[0034]其中，阶梯式凹槽结构1022每层阶梯的截面积随凹槽深度增大而减小。例如，阶梯式凹槽结构1022为图3中所示的结构，或阶梯式凹槽结构1022为图4中所示胶框的第二种结构。阶梯式凹槽结构1022每层阶梯的截面积随凹槽深度增大而减小使制作阶梯式凹槽结构1022的制程方便，并且，这样的阶梯式凹槽结构1022结构更稳固。\n\n[0035]其中，请参阅图5，图5是本申请实施例提供的光学膜层103的一种结构示意图。光学膜片103的一侧设置有膜片延伸部103A，膜片延伸部103A还可称为膜片耳朵。光学膜片103的一侧可设置两个膜片延伸部103A，两个膜片延伸部103A分布在光学膜片103的两个侧边，中间的空隙可用于设置背光模组的其他部件。并且，还可以使光学膜片103更加稳固的固定在胶框102上。\n\n[0036]其中，阶梯式凹槽结构1022的阶梯宽度大于或等于每层所述光学膜片103的膜片延伸部103A宽度。阶梯式凹槽结构1022的阶梯宽度大于每层所述光学膜片103的膜片延伸部103A宽度，方便光学膜片103的放置，留有更多空间将膜片延伸部103A插入阶梯式凹槽结构1022中，不限定光学膜片103的排列。阶梯式凹槽结构1022的阶梯宽度等于每层所述光学膜片103的膜片延伸部103A宽度，可以使膜片延伸部103A更好的契合阶梯式凹槽结构1022，使光学膜片103固定的更牢固，不易产生膜片脱落，造成产品不良。\n\n[0037]其中，请参阅图6，图6是本申请实施例提供的胶框102与光学膜片103的一种连接示意图。该背光模组结构10还包括胶层104，胶层104设置在膜片延伸部103A与阶梯式凹槽结构1022之间，胶层104连接膜片延伸部103A与阶梯式凹槽结构1022。通过贴合一条胶层104，将所有的光学膜片103的膜片延伸部103A固定在胶框102的阶梯式凹槽结构1022上。胶层104为光敏胶、双面胶或防水胶中任一种。采用胶层104固定膜片延伸部103A组装便捷，例如，阶梯式凹槽结构1022处只需要一条双面胶，即可固定所有膜片延伸部103A。本申请实施例以三层光学膜片103为示例进行说明，但其他实施方式中光学膜片层数不做限制。图6的膜片延伸部分别为对应第一光学膜片1031的第一膜片延伸部1031A、对应第二光学膜片1032的第二膜片延伸部1032A及对应第三光学膜片1033的第三膜片延伸部1033A。\n\n[0038]其中，光学膜片103包括扩散膜、量子点膜、导光膜、反射膜或增亮膜中的一层或多层。为了减少缺口数量，降低缺口制作成本和提高产能，扩散膜可用于来提升光学品味，还可用来改善膜片与面板下偏光片的吸附现象。量子点膜可以用于蓝色发光二极管激发红绿量子点，从而达到全彩化显示。导光膜用于将背光层101上光源导出，将发光二极管的点光源，转换成面光源。反射膜用于控制光线的反射、折射，使光线路径可控，可显示面板的亮度更均一。增亮膜用于改善整个背光系统发光效率。因此，设置三层以上的光学膜片103是显示面板的改进方向，为了在更低功耗下达到更好的显示效果，往往需要设置七至八层光学膜片103。\n\n[0039]本申请实施例提供的背光模组结构10通过在胶框102上设置阶梯式凹槽结构1022，可固定多层光学膜片103，解决了由于光学膜片103数量多，总体加工量大，选材复杂，厚度种类多，匹配难度大的问题。同时降低了材料的制作和管理成本。并且，采用阶梯式凹槽结构1022，使光学膜片103组装便捷，只需要一条胶层，即可固定此处的所有膜片延伸处1031。采用此方案，光学膜片103加工方便，不需要其他复杂设计，只需要设计好膜片延伸部103A外形即可。另外，阶梯式凹槽结构1022设计对空间利用最佳，可以最大限度利用一侧边框的空间，适用于三层以上光学膜片103，甚至七层、八层光学膜片103的复杂结构。阶梯式凹槽结构设置在一侧边框，因此背光模组结构10的其他三边无需考虑膜片延伸部103A的设计空间，可以在其他三边进行更窄边框的设计，适应了全面屏设计的要求。\n\n[0040]本申请实施例提供一种显示面板100，图7是本申请实施例中显示面板100的一种结构示意图。其中，显示面板100包括以上所述的背光模组结构10和封装结构20，显示面板100还可以包括其他装置。本申请实施例中封装结构20和其他装置及其装配是本领域技术人员所熟知的相关技术，在此不做过多赘述。\n\n[0041]本申请实施例提供的显示面板100包括背光模组结构10和封装结构20，该背光模组结构10包括背光层、胶框以及光学膜片。胶框上设置有阶梯式凹槽结构，通过设置阶梯式凹槽结构，可以便捷地固定多层光学膜片，解决了由于光学膜片103数量多，总体加工量大，选材复杂，厚度种类多，匹配难度大的问题。\n\n[0042]以上对本申请实施例提供的背光模组结构、背光模组结构制程方法及显示面板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种背光模组结构、背光模组结构制程方法及显示面板。\n\n背景技术\n\n[0002]因在液晶显示器(Liquid Crystal Display,LCD)显示屏中使用miniLED技术，具备高亮度高对比度的优点，可以媲美有机电致发光二极管(OrganicLight-EmittingDiode,OLED)显示技术，越来越多的液晶屏产业链的企业投入到miniLED背光模组(backlight unit,BLU)技术开发中来，而为了实现更低的功耗，更漂亮的光学品味，使用miniLED基板作为光源的背光，往往需要使用比常规侧入式BLU数量更多，功能特性更多光学膜片，比如常规侧入式BLU的导光板(light guide plate,LGP)上方一般堆叠3～4层光学膜片，而miniLED BLU的导光板上方经常需要堆叠7～8层光学膜片。这就导致一个问题，miniLEDBLU的光学膜片使用数量较多，不易进行膜片的固定设计。\n\n发明内容\n\n[0003]本申请实施例提供一种背光模组结构、背光模组结构制程方法及显示面板，能够应用于多层膜片堆叠架构的微型发光二极管背光模组的膜片固定。\n\n[0004]本申请提供一种背光模组结构，包括：\n\n[0005]背光层，所述背光层包括相对设置的第一面和第二面；\n\n[0006]胶框，所述胶框包括相对设置的第三面和第四面以及垂直于所述第三面和所述第四面相对设置的第一侧面和第二侧面，所述胶框设置在所述背光层垂直于所述第一面或所述第二面的一侧面，所述第一侧面平齐所述第二面设置，且所述第三面被所述背光层部分覆盖，所述第一侧面设置有至少一个缺口，所述缺口用于设置电路结构，所述第二侧面设置有阶梯式凹槽结构，所述阶梯式凹槽结构至少有三层阶梯；\n\n[0007]光学膜片，所述光学膜片至少包括三层，所述光学膜片层叠设置在所述第一面上，所述光学膜片的一侧设置有膜片延伸部，所述膜片延伸部通过所述阶梯式凹槽结构与所述胶框连接。\n\n[0008]在一些实施例中，所述阶梯式凹槽结构的阶梯数与所述光学膜片层数相对应。\n\n[0009]在一些实施例中，所述阶梯式凹槽结构的阶梯宽度大于或等于每层所述光学膜片的膜片延伸部宽度。\n\n[0010]在一些实施例中，还包括胶层，所述胶层设置在所述膜片延伸部与所述阶梯式凹槽结构之间，所述胶层连接所述膜片延伸部与所述阶梯式凹槽结构。\n\n[0011]在一些实施例中，所述阶梯式凹槽结构每层阶梯的截面积随凹槽深度增大而减小。\n\n[0012]在一些实施例中，所述缺口设置有两个，所述缺口设置在所述阶梯式凹槽结构两侧。\n\n[0013]在一些实施例中，所述背光层包括灯板和光源，所述光源设置在所述灯板靠近所述光学膜片的一侧，所述灯板为柔性电路板、印制电路板或树脂基板，所述光源为迷你发光二极管或微型发光二极管。\n\n[0014]在一些实施例中，所述光学膜片包括扩散膜、量子点膜、导光膜、反射膜或增亮膜中的一层或多层。\n\n[0015]在一些实施例中，所述背光层与所述胶框通过胶层连接或所述背光层与所述胶框为一体结构。\n\n[0016]本申请实施例提供一种显示面板，包括以上所述的背光模组结构。\n\n[0017]本申请实施例所提供的背光模组结构，包括：背光层、胶框以及光学膜片。所述背光层包括相对设置的第一面和第二面。所述胶框包括相对设置的第三面和第四面以及垂直于所述第三面和所述第四面相对设置的第一侧面和第二侧面，所述胶框设置在所述背光层垂直于所述第一面或所述第二面的一侧面，所述第一侧面平齐所述第二面设置，且所述第三面被所述背光层部分覆盖，所述第一侧面设置有至少一个缺口，所述缺口用于设置电路结构，所述第二侧面设置有阶梯式凹槽结构，所述阶梯式凹槽结构至少有三层阶梯。所述光学膜片至少包括三层，所述光学膜片层叠设置在所述第一面上，所述光学膜片的一侧设置有膜片延伸部，所述膜片延伸部通过所述阶梯式凹槽结构与所述胶框连接。通过在胶框上设置阶梯式凹槽结构，可以方便的将多层膜片固定在胶框上，组装便捷、加工方便，并且空间利用率高，能够最大限度的利用一侧边框的空间，进而能够在其他边框进行更窄的设计，适应了全面屏设计的要求。\n\n附图说明\n\n[0018]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1为本申请实施例提供的背光模组结构的第一种结构示意图；\n\n[0020]图2为本申请实施例提供的背光模组结构的第二种结构示意图；\n\n[0021]图3为本申请实施例提供的胶框的第一种结构示意图；\n\n[0022]图4为本申请实施例提供的胶框的第二种结构示意图；\n\n[0023]图5为本申请实施例提供的光学膜层的一种结构示意图；\n\n[0024]图6为本申请实施例提供的胶框与光学膜片的一种连接示意图；\n\n[0025]图7为本申请实施例提供的显示面板的一种结构示意图。\n\n具体实施方式\n\n[0026]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0027]需要说明的是，在本申请的描述中，需要理解的是，术语“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。\n\n[0028]本申请实施例提供一种背光模组结构、背光模组结构制程方法及显示面板，以下对背光模组结构做详细介绍。\n\n[0029]请参阅图1，图1是本申请实施例提供的背光模组结构10的第一种结构示意图。该背光模组结构10包括背光层101、胶框102以及光学膜片103。背光层101包括相对设置的第一面101a和第二面101b。胶框102包括相对设置的第三面102a和第四面102b以及垂直于第三面102a和第四面102b相对设置的第一侧面102c和第二侧面102d，胶框102设置在背光层101垂直于第一面101a或第二面101b的一侧面，第一侧面102c平齐第二面101b设置，且第三面102a被背光层101部分覆盖，第一侧面102c设置有至少一个缺口，缺口用于设置电路结构，第二侧面102d设置有阶梯式凹槽结构，阶梯式凹槽结构至少有三层阶梯。光学膜片103至少包括三层，光学膜片103层叠设置在第一面101a上，光学膜片103的一侧设置有膜片延伸部，膜片延伸部通过阶梯式凹槽结构与胶框102连接。本申请实施例提供的背光模组结构10通过设置阶梯式凹槽结构，能够便于进行三层以上的膜片固定，例如七层、八层光学膜片103的膜片固定，能够解决复杂膜片结构不易固定的问题。本申请实施例以三层光学膜片103为示例进行说明，但其他实施方式中光学膜片103的层数不做限制。图1中光学膜片103包括第一光学膜片1031、第二光学膜片1032及第三光学膜片1033。\n\n[0030]需要说明的是，第一面101a可以为背光层101的上表面，第二面101b可以为背光层101的下表面。当然，第一面101a也可以为背光层101的下表面，第二面101b可以为背光层101的上表面。本申请实施例中不做特殊说明的情况下，默认为第一面101a为背光层101的上表面，第二面101b为背光层101的下表面。胶框102的第三面102a和第四面102b以及垂直于第三面102a和第四面102b相对设置的第一侧面102c和第二侧面102d也同理。\n\n[0031]其中，请参阅图2，图2是本申请实施例提供的背光模组结构10的第二种结构示意图。背光层101包括灯板1011和光源1012，光源1012设置在灯板1011靠近光学膜片103的一侧，图2中光源1012覆盖整个灯板1011作为示例，具体的灯板1011的设置方式不做限制。灯板1011为柔性电路板、印制电路板或树脂基板，光源1012为迷你发光二极管或微型发光二极管。\n\n[0032]其中，背光层101与胶框102通过胶层连接或背光层101与胶框102为一体结构。胶层为光敏胶、双面胶或防水胶中任一种。\n\n[0033]其中，请参阅图3，图3是本申请实施例提供的胶框102的第一种结构示意图，第一侧面102c设置有至少一个缺口1021，缺口1021用于设置电路结构，第二侧面102d设置有阶梯式凹槽结构1022，阶梯式凹槽结构1022至少有三层阶梯。具体地，电路结构为刚性印制电路板(Printed Circuit Board,PCB)、柔性电路板(Flexible Printed Circuit,FPC)或柔性印制电路板(Flexible Printed Circuit Board,FPCB)中的任一种。图3以阶梯式凹槽结构1022阶梯层数为三层作为示例，阶梯式凹槽结构1022的阶梯层数还可以为四层、五层、六层、七层或八层。阶梯式凹槽结构1022的阶梯数与光学膜片103层数相对应，例如，光学膜层103设置有三层，则阶梯式凹槽结构1022设置三层阶梯用于对应放置光学膜层103的膜片延伸部。缺口1021设置有两个，缺口1021设置在阶梯式凹槽结构1022两侧。缺口1021还可以设置为三个、四个或五个，缺口1021的个数与背光模组中电路结构数量相对应。\n\n[0034]其中，阶梯式凹槽结构1022每层阶梯的截面积随凹槽深度增大而减小。例如，阶梯式凹槽结构1022为图3中所示的结构，或阶梯式凹槽结构1022为图4中所示胶框的第二种结构。阶梯式凹槽结构1022每层阶梯的截面积随凹槽深度增大而减小使制作阶梯式凹槽结构1022的制程方便，并且，这样的阶梯式凹槽结构1022结构更稳固。\n\n[0035]其中，请参阅图5，图5是本申请实施例提供的光学膜层103的一种结构示意图。光学膜片103的一侧设置有膜片延伸部103A，膜片延伸部103A还可称为膜片耳朵。光学膜片103的一侧可设置两个膜片延伸部103A，两个膜片延伸部103A分布在光学膜片103的两个侧边，中间的空隙可用于设置背光模组的其他部件。并且，还可以使光学膜片103更加稳固的固定在胶框102上。\n\n[0036]其中，阶梯式凹槽结构1022的阶梯宽度大于或等于每层所述光学膜片103的膜片延伸部103A宽度。阶梯式凹槽结构1022的阶梯宽度大于每层所述光学膜片103的膜片延伸部103A宽度，方便光学膜片103的放置，留有更多空间将膜片延伸部103A插入阶梯式凹槽结构1022中，不限定光学膜片103的排列。阶梯式凹槽结构1022的阶梯宽度等于每层所述光学膜片103的膜片延伸部103A宽度，可以使膜片延伸部103A更好的契合阶梯式凹槽结构1022，使光学膜片103固定的更牢固，不易产生膜片脱落，造成产品不良。\n\n[0037]其中，请参阅图6，图6是本申请实施例提供的胶框102与光学膜片103的一种连接示意图。该背光模组结构10还包括胶层104，胶层104设置在膜片延伸部103A与阶梯式凹槽结构1022之间，胶层104连接膜片延伸部103A与阶梯式凹槽结构1022。通过贴合一条胶层104，将所有的光学膜片103的膜片延伸部103A固定在胶框102的阶梯式凹槽结构1022上。胶层104为光敏胶、双面胶或防水胶中任一种。采用胶层104固定膜片延伸部103A组装便捷，例如，阶梯式凹槽结构1022处只需要一条双面胶，即可固定所有膜片延伸部103A。本申请实施例以三层光学膜片103为示例进行说明，但其他实施方式中光学膜片层数不做限制。图6的膜片延伸部分别为对应第一光学膜片1031的第一膜片延伸部1031A、对应第二光学膜片1032的第二膜片延伸部1032A及对应第三光学膜片1033的第三膜片延伸部1033A。\n\n[0038]其中，光学膜片103包括扩散膜、量子点膜、导光膜、反射膜或增亮膜中的一层或多层。为了减少缺口数量，降低缺口制作成本和提高产能，扩散膜可用于来提升光学品味，还可用来改善膜片与面板下偏光片的吸附现象。量子点膜可以用于蓝色发光二极管激发红绿量子点，从而达到全彩化显示。导光膜用于将背光层101上光源导出，将发光二极管的点光源，转换成面光源。反射膜用于控制光线的反射、折射，使光线路径可控，可显示面板的亮度更均一。增亮膜用于改善整个背光系统发光效率。因此，设置三层以上的光学膜片103是显示面板的改进方向，为了在更低功耗下达到更好的显示效果，往往需要设置七至八层光学膜片103。\n\n[0039]本申请实施例提供的背光模组结构10通过在胶框102上设置阶梯式凹槽结构1022，可固定多层光学膜片103，解决了由于光学膜片103数量多，总体加工量大，选材复杂，厚度种类多，匹配难度大的问题。同时降低了材料的制作和管理成本。并且，采用阶梯式凹槽结构1022，使光学膜片103组装便捷，只需要一条胶层，即可固定此处的所有膜片延伸处1031。采用此方案，光学膜片103加工方便，不需要其他复杂设计，只需要设计好膜片延伸部103A外形即可。另外，阶梯式凹槽结构1022设计对空间利用最佳，可以最大限度利用一侧边框的空间，适用于三层以上光学膜片103，甚至七层、八层光学膜片103的复杂结构。阶梯式凹槽结构设置在一侧边框，因此背光模组结构10的其他三边无需考虑膜片延伸部103A的设计空间，可以在其他三边进行更窄边框的设计，适应了全面屏设计的要求。\n\n[0040]本申请实施例提供一种显示面板100，图7是本申请实施例中显示面板100的一种结构示意图。其中，显示面板100包括以上所述的背光模组结构10和封装结构20，显示面板100还可以包括其他装置。本申请实施例中封装结构20和其他装置及其装配是本领域技术人员所熟知的相关技术，在此不做过多赘述。\n\n[0041]本申请实施例提供的显示面板100包括背光模组结构10和封装结构20，该背光模组结构10包括背光层、胶框以及光学膜片。胶框上设置有阶梯式凹槽结构，通过设置阶梯式凹槽结构，可以便捷地固定多层光学膜片，解决了由于光学膜片103数量多，总体加工量大，选材复杂，厚度种类多，匹配难度大的问题。\n\n[0042]以上对本申请实施例提供的背光模组结构、背光模组结构制程方法及显示面板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10790, 23844, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种显示器的驱动电路。\n\n背景技术\n\n[0002]目前微发光二极管(Micro-LED)是新一代显示技术，具有自发光显示特性，相较于现有的有机发光二极管(Organic Light-Emitting Diode，OLED)技术，Micro-LED显示装置具有亮度更高、发光效率更好、功耗更低的优点。根据Micro-LED特有的电压电流特性，现在Micro-LED照明基本采用恒流驱动方式。\n\n[0003]Micro-LED在不同的电流密度下，发光波普会发生偏移，即常规PAM驱动电路(Pulse Amplitude Modulation，脉冲幅度调制驱动电路，用于控制提供Micro-LED的驱动电流的振幅驱动方式，通过电流大小控制亮度)，会引起画面色偏。目前，使用另外一种PWM驱动电路(Pulse Width Modulation，脉冲宽度调制驱动电路，通过控制Micro-LED的发光时间控制亮度)对Micro-LED进行调光。PWM驱动电路可以解决Micro-LED的色偏问题，驱动器的效率较高，并且能够进行精确控制，但其存在以下缺点：充电时间短；数据传输宽带要求高(需使用随机存储器进行数据缓存)；无法支持高分辨率。\n\n[0004]综上所述，现有的显示器的驱动电路，采用Micro-LED显示技术，在使用PWM驱动电路解决Micro-LED的色偏问题时，存在着充电时间短、数据传输宽带要求高以及无法支持高分辨率的技术问题。\n\n发明内容\n\n[0005]本申请实施例提供一种显示器的驱动电路，采用Micro-LED显示技术，既可以消除色偏移，又可以克服常规PWM驱动方式的缺点，以解决现有的显示器的驱动电路，采用Micro-LED显示技术，在使用PWM驱动电路解决Micro-LED的色偏问题时，存在着充电时间短、数据传输宽带要求高以及无法支持高分辨率的技术问题。\n\n[0006]本申请实施例提供一种显示器的驱动电路，包括输入单元、与所述输入单元耦合的控制单元以及与所述控制单元耦合的发光单元，所述控制单元用于驱动所述发光单元发光；\n\n[0007]其中，所述控制单元包括相互独立的PWM控制单元以及PAM控制单元，所述PWM控制单元用于控制所述发光单元的发光时间，所述PAM控制单元用于控制所述发光单元中驱动电流的大小。\n\n[0008]在一些实施例中，所述输入单元用于检测所述发光单元的光线色度信息并将所述光线色度信息传输至所述控制单元。\n\n[0009]在一些实施例中，所述输入单元包括PWM电路扫描信号、PWM电路数据信号、PAM电路扫描信号以及PAM电路数据信号；其中,所述PWM电路扫描信号与所述PWM控制单元中薄膜晶体管的栅极连接，用于对所述PWM控制单元进行逐行扫描；所述PWM电路数据信号与所述PWM控制单元中薄膜晶体管的源级连接，用于控制所述发光单元的发光时间；所述PAM电路扫描信号与所述PAM控制单元中薄膜晶体管的栅极连接，用于对所述PAM控制单元进行逐行扫描；所述PAM电路数据信号与所述PAM控制单元中薄膜晶体管的源级连接，用于控制所述发光单元中驱动电流的大小。\n\n[0010]在一些实施例中，所述PWM控制单元包括扫频控制模块、PWM数据控制模块以及PWM时间控制模块，所述PWM时间控制模块的第一端与所述扫频控制模块耦合，所述PWM时间控制模块的第二端与所述PWM数据控制模块耦合，所述PWM时间控制模块的第三端与所述发光单元耦合。\n\n[0011]在一些实施例中，所述扫频控制模块包括第一薄膜晶体管、第一电容以及第一电阻，所述第一薄膜晶体管的源级接入参考电压，所述第一薄膜晶体管的栅级接入输入控制端，所述第一薄膜晶体管的漏级连接所述PWM时间控制模块。\n\n[0012]在一些实施例中，所述PWM数据控制模块包括第二薄膜晶体管，所述第二薄膜晶体管的源级接入所述PWM电路数据信号，所述第二薄膜晶体管的栅级接入PWM电路扫描信号，所述第二薄膜晶体管的漏级连接所述PWM时间控制模块。\n\n[0013]在一些实施例中，所述PWM时间控制模块包括第二电容、电压比较器以及第三薄膜晶体管，所述电压比较器的正向输入端连接至所述第二电容的一端以及所述PWM数据控制模块，所述电压比较器的反向输入端连接至所述扫频控制模块，所述电压比较器的输出端连接至所述第三薄膜晶体管的栅极；所述第三薄膜晶体管的源极接地，所述第三薄膜晶体管的漏极连接所述发光单元。\n\n[0014]在一些实施例中，所述PWM时间控制模块还包括电压跟随器，所述电压跟随器的正向输入端连接至所述第二电容的一端以及所述PWM数据控制模块，所述电压跟随器的反向输入端连接至所述电压比较器的正向输入端，所述电压跟随器的输出端连接至所述电压比较器的正向输入端。\n\n[0015]在一些实施例中，所述PAM控制单元包括第四薄膜晶体管，所述第四薄膜晶体管的源级接入所述PAM电路数据信号，所述第四薄膜晶体管的栅级接入PAM电路扫描信号，所述第四薄膜晶体管的漏级连接所述发光单元。\n\n[0016]在一些实施例中，所述发光单元包括第三电容、第五薄膜晶体管以及Micro-LED光源，所述第三电容的一端连接所述控制单元，所述第三电容的另一端接地；所述第五薄膜晶体管的栅极连接所述控制单元以及所述第三电容，所述第五薄膜晶体管的源极接地，所述第五薄膜晶体管的漏极连接所述Micro-LED光源的一端，所述Micro-LED光源的另一端连接电源正级输入端电压。\n\n[0017]本申请实施例所提供的显示器的驱动电路，采用Micro-LED显示技术，将相互独立的PWM控制单元以及PAM控制单元同时控制发光单元驱动发光，在解决PAM驱动色偏移的问题的同时，克服TFT阈值电压引起的亮度不均，使得显示器充电时间长、数据带宽要求一般以及可支持高分辨率，进一步提高了显示器的显示效果。\n\n附图说明\n\n[0018]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0019]图1为本申请实施例提供的显示器的驱动电路的结构框图。\n\n[0020]图2为本申请实施例提供的显示器的驱动电路中各种信号的时序图。\n\n[0021]图3A为本申请第一实施例提供的显示器的驱动电路图。\n\n[0022]图3B为本申请第一实施例提供的显示器的驱动电路中各种信号的时序图。\n\n[0023]图4为本申请第二实施例提供的显示器的驱动电路图。\n\n[0024]图5为本申请实施例提供的显示器的驱动电路中不同PWM_DATA电压下Micro-LED的发光时间对比示意图。\n\n具体实施方式\n\n[0025]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0026]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0027]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0028]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0029]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0030]本申请实施例针对现有的Micro-LED显示器的驱动电路，在使用PWM驱动电路解决Micro-LED的色偏问题时，存在着充电时间短、数据传输宽带要求高以及无法支持高分辨率的技术问题，本实施例能够解决该缺陷。\n\n[0031]如图1所示，为本申请实施例提供的显示器的驱动电路的结构框图。其中，所述显示器的驱动电路包括输入单元10、与所述输入单元10耦合的控制单元20以及与所述控制单元20耦合的发光单元30，所述控制单元20用于驱动所述发光单元30发光。在一优选实施例中，所述发光单元30的光源为Micro-LED。\n\n[0032]具体地，所述控制单元20包括相互独立的PWM控制单元以及PAM控制单元，所述PWM控制单元用于控制所述发光单元30中Micro-LED的发光时间，所述PAM控制单元用于控制所述发光单元30中驱动电流的大小。\n\n[0033]具体地，所述输入单元10用于检测所述Micro-LED发光单元30的光线色度信息并将所述光线色度信息传输至所述控制单元20。其中，所述输入单元包括PWM电路扫描信号(PWM_SCAN)、PWM电路数据信号(PWM_DATA)、PAM电路扫描信号(PAM_SCAN)以及PAM电路数据信号(PAM_DATA)。\n\n[0034]具体地，所述PWM电路扫描信号(PWM_SCAN)与所述PWM控制单元中薄膜晶体管的栅极连接，用于对所述PWM控制单元进行逐行扫描；所述PWM电路数据信号(PWM_DATA)与所述PWM控制单元中薄膜晶体管的源级连接，用于控制所述发光单元30的发光时间；所述PAM电路扫描信号(PAM_SCAN)与所述PAM控制单元中薄膜晶体管的栅极连接，用于对所述PAM控制单元进行逐行扫描；所述PAM电路数据信号(PAM_DATA)与所述PAM控制单元中薄膜晶体管的源级连接，用于控制所述发光单元中驱动电流的大小；优选地，所述PAM电路数据信号(PAM_DATA)的电压大小为固定参考电压(VREF)。\n\n[0035]如图2所示，为本申请实施例提供的显示器的驱动电路中各种信号的时序图(以480*RGB*270*120HZ刷新速度为例)。具体地，图2示出了所述显示器的驱动电路中所述PWM电路扫描信号(PWM_SCAN)、所述PWM电路数据信号(PWM_DATA)、所述PAM电路扫描信号(PAM_SCAN)、所述PAM电路数据信号(PAM_DATA)、输入控制信号(V_CTRL)、电源电压输入控制信号(VDD_CTRL)以及Micro-LED发光信号(LED EMITTING)根据时间的变化，其具体过程如下：\n\n[0036]首先，所述PAM电路扫描信号(PAM_SCAN)逐行扫描，并写入所述PAM电路数据信号(PAM_DATA)，所述PAM电路数据信号(PAM_DATA)可由一个固定参考电压(VREF)提供；之后，所述PWM电路扫描信号(PWM_SCAN)逐行扫描，并写入所述PWM电路数据信号(PWM_DATA)，所述PWM电路数据信号(PWM_DATA)的大小决定所述发光单元30的发光时间；之后，所述PWM电路数据信号(PWM_DATA)输出到所述PWM控制单元，所述PWM控制单元将不同的所述PWM电路数据信号(PWM_DATA)转换为所述发光单元30的发光控制时间，最终将存储电容内的电荷释放，完成输入电压到所述发光单元30的发光时间的转换。\n\n[0037]本申请实施例提供的显示器的驱动电路，首先不需要PWM驱动电路中子场的概念，具有较长的充电时间；其次，数据带宽需求不高，具有与普通显示器相似的驱动方法；再次，不需要考虑TFT(薄膜晶体管)中Vth(阈值电压)漂移及补偿问题(当所述PAM电路数据信号PAM_DATA的电压适当大时，电流对阈值电压不敏感)；最后，由于显示器以恒定电流发光，因此可以解决所述发光单元30中Micro-LED光源的波长漂移问题。\n\n[0038]如图3A所示，为本申请第一实施例提供的显示器的驱动电路图。其中，所述PWM控制单元21包括扫频控制模块211、PWM数据控制模块212以及PWM时间控制模块213，所述PWM时间控制模块213的第一端与所述扫频控制模块211耦合，所述PWM时间控制模块213的第二端与所述PWM数据控制模块212耦合，所述PWM时间控制模块213的第三端与所述Micro-LED发光单元30耦合。\n\n[0039]具体地，所述扫频控制模块211包括第一薄膜晶体管T1、第一电容C1以及第一电阻R1，所述第一薄膜晶体管T1的源级接入参考电压(VREF)，所述第一薄膜晶体管T1的栅级接入输入控制端(V_CTRL)，所述第一薄膜晶体管T1的漏级连接所述PWM时间控制模块213。\n\n[0040]具体地，所述PWM数据控制模块212包括第二薄膜晶体管T2，所述第二薄膜晶体管T2的源级接入所述PWM电路数据信号(PWM_DATA)，所述第二薄膜晶体管T2的栅级接入PWM电路扫描信号(PWM_SCAN)，所述第二薄膜晶体管T3的漏级连接所述PWM时间控制模块213。\n\n[0041]具体地，所述PWM时间控制模块213包括第二电容C2、电压比较器以及第三薄膜晶体管T3，所述电压比较器的正向输入端连接至所述第二电容C2的一端以及所述PWM数据控制模块212，所述电压比较器的反向输入端连接至所述扫频控制模块211，所述电压比较器的输出端连接至所述第三薄膜晶体管T3的栅极；所述第三薄膜晶体管T3的源极接地，所述第三薄膜晶体管T3的漏极连接所述Micro-LED发光单元30。\n\n[0042]具体地，所述PAM控制单元22包括第四薄膜晶体管T4，所述第四薄膜晶体管T4的源级接入所述PAM电路数据信号(PAM_DATA)，所述第四薄膜晶体管T4的栅级接入PAM电路扫描信号(PAM_SCAN)，所述第四薄膜晶体管的漏级T4连接所述发光单元30。\n\n[0043]具体地，所述发光单元30包括第三电容C3、第五薄膜晶体管T5以及Micro-LED光源D，所述第三电容C3的一端连接所述控制单元20，所述第三电容C3的另一端接地；所述第五薄膜晶体管T5的栅极连接所述控制单元20以及所述第三电容C3，所述第五薄膜晶体管T5的源极接地，所述第五薄膜晶体管T5的漏极连接所述Micro-LED光源D的一端，所述Micro-LED光源D的另一端连接电源正级输入端电压(VDD)。\n\n[0044]如图3B所示，为本申请第一实施例提供的显示器的驱动电路中各种信号的时序图(以480*RGB*270*120HZ刷新速度为例)。具体地，图3B示出了本申请第一实施例提供的显示器的驱动电路中扫频电压(SWEEP)、所述PWM电路数据信号(PWM_DATA)、所述PAM电路扫描信号(PAM_SCAN)的电压、所述PAM电路数据信号(PAM_DATA)的电压、所述PWM控制单元(PWM)的输出电压以及所述发光单元30中Micro-LED发光信号的电流(I-LED)根据时间的变化，其具体过程如下：\n\n[0045]在第一时间段T1(3ms)时，所述扫频控制模块211充电，所述扫频控制模块211的扫频电压(SWEEP)为14V，所述PAM电路扫描信号(PAM_SCAN)逐行扫描，并写入所述PAM电路数据信号(PAM_DATA)，所述PAM电路数据信号(PAM_DATA)的电压为8V；之后，所述PWM电路扫描信号(PWM_SCAN)逐行扫描，并写入所述PWM电路数据信号(PWM_DATA),所述PWM电路数据信号(PWM_DATA)的电压为12V；之后，所述PWM电路数据信号(PWM_DATA)输出到所述PWM控制单元，所述PWM控制单元将不同的所述PWM电路数据信号(PWM_DATA)转换为Micro-LED的发光控制时间，最终输入至所述发光单元30，使Micro-LED发光，所述PWM控制单元(PWM)的输出电压为-7V。\n\n[0046]在第二时间段T2(3ms)时，所述扫频控制模块211的扫频电压(SWEEP)下降，开始放电。当所述扫频控制模块211的扫频电压(SWEEP)高于所述PWM电路数据信号(PWM_DATA)的输入电压时，AMP输入低电平，所述PWM时间控制模块213中的电压比较器的输出端输出扫频电压至所述发光单元30，此时，所述PWM数据控制模块212关闭，所述PAM电路数据信号(PAM_DATA)控制驱动所述薄膜晶体管T5流过电流，所述发光单元30发光。\n\n[0047]在第三时间段T3(3ms)时，所述扫频控制模块211的扫频电压(SWEEP)继续放电。当所述扫频控制模块211的扫频电压(SWEEP)小于所述PWM电路数据信号(PWM_DATA)的输入电压时，AMP输入高电平，所述PWM时间控制模块213中的电压比较器的输出端输出所述PWM控制单元(PWM)的输出电压至所述发光单元30，此时，所述PWM数据控制模块212开启，并将所述PAM电路数据信号(PAM_DATA)的电压释放，控制驱动所述薄膜晶体管T5关闭，所述发光单元30熄灭。\n\n[0048]本申请第一实施例提供的显示器的驱动电路利用电压比较器，实现电压大小转化为发光时间长短功能。\n\n[0049]如图4所示，为本申请第二实施例提供的显示器的驱动电路图。其中，本申请第二实施例与本申请第一实施例的唯一不同之处仅在于，所述PWM时间控制模块213还包括电压跟随器模块2131，所述电压跟随器模块2131包括电压跟随器，所述电压跟随器的正向输入端连接至所述第二电容C2的一端以及所述PWM数据控制模块212，所述电压跟随器的反向输入端连接至所述电压比较器的正向输入端，所述电压跟随器的输出端连接至所述电压比较器的正向输入端。\n\n[0050]本申请第二实施例提供的显示器的驱动电路，利用电压跟随器，能够克服所述PWM电路数据信号(PWM_DATA)受所述扫频电压(SWEEP)下降引起的耦合现象，进而克服TFT阈值电压引起的亮度不均，同时提高充电率。\n\n[0051]如图5所示，为本申请实施例提供的显示器的驱动电路中不同PWM_DATA电压下Micro-LED的发光时间对比示意图。其中图5的实验结果显示，不同大小的所述PWM电路数据信号(PWM_DATA)的输入电压下，可以实现所述发光单元30不同的发光时间控制，即可切分出不同等级的灰阶。\n\n[0052]本申请实施例所提供的显示器的驱动电路，将相互独立的PWM控制单元以及PAM控制单元同时控制Micro-LED发光单元驱动发光，在解决PAM驱动色偏移的问题的同时，克服TFT阈值电压引起的亮度不均，使得显示器充电时间长、数据带宽要求一般以及可支持高分辨率，进一步提高了显示器的显示效果。\n\n[0053]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0054]以上对本申请实施例所提供的一种显示器的驱动电路进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种显示器的驱动电路。\n\n背景技术\n\n[0002]目前微发光二极管(Micro-LED)是新一代显示技术，具有自发光显示特性，相较于现有的有机发光二极管(Organic Light-Emitting Diode，OLED)技术，Micro-LED显示装置具有亮度更高、发光效率更好、功耗更低的优点。根据Micro-LED特有的电压电流特性，现在Micro-LED照明基本采用恒流驱动方式。\n\n[0003]Micro-LED在不同的电流密度下，发光波普会发生偏移，即常规PAM驱动电路(Pulse Amplitude Modulation，脉冲幅度调制驱动电路，用于控制提供Micro-LED的驱动电流的振幅驱动方式，通过电流大小控制亮度)，会引起画面色偏。目前，使用另外一种PWM驱动电路(Pulse Width Modulation，脉冲宽度调制驱动电路，通过控制Micro-LED的发光时间控制亮度)对Micro-LED进行调光。PWM驱动电路可以解决Micro-LED的色偏问题，驱动器的效率较高，并且能够进行精确控制，但其存在以下缺点：充电时间短；数据传输宽带要求高(需使用随机存储器进行数据缓存)；无法支持高分辨率。\n\n[0004]综上所述，现有的显示器的驱动电路，采用Micro-LED显示技术，在使用PWM驱动电路解决Micro-LED的色偏问题时，存在着充电时间短、数据传输宽带要求高以及无法支持高分辨率的技术问题。\n\n发明内容\n\n[0005]本申请实施例提供一种显示器的驱动电路，采用Micro-LED显示技术，既可以消除色偏移，又可以克服常规PWM驱动方式的缺点，以解决现有的显示器的驱动电路，采用Micro-LED显示技术，在使用PWM驱动电路解决Micro-LED的色偏问题时，存在着充电时间短、数据传输宽带要求高以及无法支持高分辨率的技术问题。\n\n[0006]本申请实施例提供一种显示器的驱动电路，包括输入单元、与所述输入单元耦合的控制单元以及与所述控制单元耦合的发光单元，所述控制单元用于驱动所述发光单元发光；\n\n[0007]其中，所述控制单元包括相互独立的PWM控制单元以及PAM控制单元，所述PWM控制单元用于控制所述发光单元的发光时间，所述PAM控制单元用于控制所述发光单元中驱动电流的大小。\n\n[0008]在一些实施例中，所述输入单元用于检测所述发光单元的光线色度信息并将所述光线色度信息传输至所述控制单元。\n\n[0009]在一些实施例中，所述输入单元包括PWM电路扫描信号、PWM电路数据信号、PAM电路扫描信号以及PAM电路数据信号；其中,所述PWM电路扫描信号与所述PWM控制单元中薄膜晶体管的栅极连接，用于对所述PWM控制单元进行逐行扫描；所述PWM电路数据信号与所述PWM控制单元中薄膜晶体管的源级连接，用于控制所述发光单元的发光时间；所述PAM电路扫描信号与所述PAM控制单元中薄膜晶体管的栅极连接，用于对所述PAM控制单元进行逐行扫描；所述PAM电路数据信号与所述PAM控制单元中薄膜晶体管的源级连接，用于控制所述发光单元中驱动电流的大小。\n\n[0010]在一些实施例中，所述PWM控制单元包括扫频控制模块、PWM数据控制模块以及PWM时间控制模块，所述PWM时间控制模块的第一端与所述扫频控制模块耦合，所述PWM时间控制模块的第二端与所述PWM数据控制模块耦合，所述PWM时间控制模块的第三端与所述发光单元耦合。\n\n[0011]在一些实施例中，所述扫频控制模块包括第一薄膜晶体管、第一电容以及第一电阻，所述第一薄膜晶体管的源级接入参考电压，所述第一薄膜晶体管的栅级接入输入控制端，所述第一薄膜晶体管的漏级连接所述PWM时间控制模块。\n\n[0012]在一些实施例中，所述PWM数据控制模块包括第二薄膜晶体管，所述第二薄膜晶体管的源级接入所述PWM电路数据信号，所述第二薄膜晶体管的栅级接入PWM电路扫描信号，所述第二薄膜晶体管的漏级连接所述PWM时间控制模块。\n\n[0013]在一些实施例中，所述PWM时间控制模块包括第二电容、电压比较器以及第三薄膜晶体管，所述电压比较器的正向输入端连接至所述第二电容的一端以及所述PWM数据控制模块，所述电压比较器的反向输入端连接至所述扫频控制模块，所述电压比较器的输出端连接至所述第三薄膜晶体管的栅极；所述第三薄膜晶体管的源极接地，所述第三薄膜晶体管的漏极连接所述发光单元。\n\n[0014]在一些实施例中，所述PWM时间控制模块还包括电压跟随器，所述电压跟随器的正向输入端连接至所述第二电容的一端以及所述PWM数据控制模块，所述电压跟随器的反向输入端连接至所述电压比较器的正向输入端，所述电压跟随器的输出端连接至所述电压比较器的正向输入端。\n\n[0015]在一些实施例中，所述PAM控制单元包括第四薄膜晶体管，所述第四薄膜晶体管的源级接入所述PAM电路数据信号，所述第四薄膜晶体管的栅级接入PAM电路扫描信号，所述第四薄膜晶体管的漏级连接所述发光单元。\n\n[0016]在一些实施例中，所述发光单元包括第三电容、第五薄膜晶体管以及Micro-LED光源，所述第三电容的一端连接所述控制单元，所述第三电容的另一端接地；所述第五薄膜晶体管的栅极连接所述控制单元以及所述第三电容，所述第五薄膜晶体管的源极接地，所述第五薄膜晶体管的漏极连接所述Micro-LED光源的一端，所述Micro-LED光源的另一端连接电源正级输入端电压。\n\n[0017]本申请实施例所提供的显示器的驱动电路，采用Micro-LED显示技术，将相互独立的PWM控制单元以及PAM控制单元同时控制发光单元驱动发光，在解决PAM驱动色偏移的问题的同时，克服TFT阈值电压引起的亮度不均，使得显示器充电时间长、数据带宽要求一般以及可支持高分辨率，进一步提高了显示器的显示效果。\n\n附图说明\n\n[0018]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0019]图1为本申请实施例提供的显示器的驱动电路的结构框图。\n\n[0020]图2为本申请实施例提供的显示器的驱动电路中各种信号的时序图。\n\n[0021]图3A为本申请第一实施例提供的显示器的驱动电路图。\n\n[0022]图3B为本申请第一实施例提供的显示器的驱动电路中各种信号的时序图。\n\n[0023]图4为本申请第二实施例提供的显示器的驱动电路图。\n\n[0024]图5为本申请实施例提供的显示器的驱动电路中不同PWM_DATA电压下Micro-LED的发光时间对比示意图。\n\n具体实施方式\n\n[0025]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0026]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0027]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0028]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0029]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0030]本申请实施例针对现有的Micro-LED显示器的驱动电路，在使用PWM驱动电路解决Micro-LED的色偏问题时，存在着充电时间短、数据传输宽带要求高以及无法支持高分辨率的技术问题，本实施例能够解决该缺陷。\n\n[0031]如图1所示，为本申请实施例提供的显示器的驱动电路的结构框图。其中，所述显示器的驱动电路包括输入单元10、与所述输入单元10耦合的控制单元20以及与所述控制单元20耦合的发光单元30，所述控制单元20用于驱动所述发光单元30发光。在一优选实施例中，所述发光单元30的光源为Micro-LED。\n\n[0032]具体地，所述控制单元20包括相互独立的PWM控制单元以及PAM控制单元，所述PWM控制单元用于控制所述发光单元30中Micro-LED的发光时间，所述PAM控制单元用于控制所述发光单元30中驱动电流的大小。\n\n[0033]具体地，所述输入单元10用于检测所述Micro-LED发光单元30的光线色度信息并将所述光线色度信息传输至所述控制单元20。其中，所述输入单元包括PWM电路扫描信号(PWM_SCAN)、PWM电路数据信号(PWM_DATA)、PAM电路扫描信号(PAM_SCAN)以及PAM电路数据信号(PAM_DATA)。\n\n[0034]具体地，所述PWM电路扫描信号(PWM_SCAN)与所述PWM控制单元中薄膜晶体管的栅极连接，用于对所述PWM控制单元进行逐行扫描；所述PWM电路数据信号(PWM_DATA)与所述PWM控制单元中薄膜晶体管的源级连接，用于控制所述发光单元30的发光时间；所述PAM电路扫描信号(PAM_SCAN)与所述PAM控制单元中薄膜晶体管的栅极连接，用于对所述PAM控制单元进行逐行扫描；所述PAM电路数据信号(PAM_DATA)与所述PAM控制单元中薄膜晶体管的源级连接，用于控制所述发光单元中驱动电流的大小；优选地，所述PAM电路数据信号(PAM_DATA)的电压大小为固定参考电压(VREF)。\n\n[0035]如图2所示，为本申请实施例提供的显示器的驱动电路中各种信号的时序图(以480*RGB*270*120HZ刷新速度为例)。具体地，图2示出了所述显示器的驱动电路中所述PWM电路扫描信号(PWM_SCAN)、所述PWM电路数据信号(PWM_DATA)、所述PAM电路扫描信号(PAM_SCAN)、所述PAM电路数据信号(PAM_DATA)、输入控制信号(V_CTRL)、电源电压输入控制信号(VDD_CTRL)以及Micro-LED发光信号(LED EMITTING)根据时间的变化，其具体过程如下：\n\n[0036]首先，所述PAM电路扫描信号(PAM_SCAN)逐行扫描，并写入所述PAM电路数据信号(PAM_DATA)，所述PAM电路数据信号(PAM_DATA)可由一个固定参考电压(VREF)提供；之后，所述PWM电路扫描信号(PWM_SCAN)逐行扫描，并写入所述PWM电路数据信号(PWM_DATA)，所述PWM电路数据信号(PWM_DATA)的大小决定所述发光单元30的发光时间；之后，所述PWM电路数据信号(PWM_DATA)输出到所述PWM控制单元，所述PWM控制单元将不同的所述PWM电路数据信号(PWM_DATA)转换为所述发光单元30的发光控制时间，最终将存储电容内的电荷释放，完成输入电压到所述发光单元30的发光时间的转换。\n\n[0037]本申请实施例提供的显示器的驱动电路，首先不需要PWM驱动电路中子场的概念，具有较长的充电时间；其次，数据带宽需求不高，具有与普通显示器相似的驱动方法；再次，不需要考虑TFT(薄膜晶体管)中Vth(阈值电压)漂移及补偿问题(当所述PAM电路数据信号PAM_DATA的电压适当大时，电流对阈值电压不敏感)；最后，由于显示器以恒定电流发光，因此可以解决所述发光单元30中Micro-LED光源的波长漂移问题。\n\n[0038]如图3A所示，为本申请第一实施例提供的显示器的驱动电路图。其中，所述PWM控制单元21包括扫频控制模块211、PWM数据控制模块212以及PWM时间控制模块213，所述PWM时间控制模块213的第一端与所述扫频控制模块211耦合，所述PWM时间控制模块213的第二端与所述PWM数据控制模块212耦合，所述PWM时间控制模块213的第三端与所述Micro-LED发光单元30耦合。\n\n[0039]具体地，所述扫频控制模块211包括第一薄膜晶体管T1、第一电容C1以及第一电阻R1，所述第一薄膜晶体管T1的源级接入参考电压(VREF)，所述第一薄膜晶体管T1的栅级接入输入控制端(V_CTRL)，所述第一薄膜晶体管T1的漏级连接所述PWM时间控制模块213。\n\n[0040]具体地，所述PWM数据控制模块212包括第二薄膜晶体管T2，所述第二薄膜晶体管T2的源级接入所述PWM电路数据信号(PWM_DATA)，所述第二薄膜晶体管T2的栅级接入PWM电路扫描信号(PWM_SCAN)，所述第二薄膜晶体管T3的漏级连接所述PWM时间控制模块213。\n\n[0041]具体地，所述PWM时间控制模块213包括第二电容C2、电压比较器以及第三薄膜晶体管T3，所述电压比较器的正向输入端连接至所述第二电容C2的一端以及所述PWM数据控制模块212，所述电压比较器的反向输入端连接至所述扫频控制模块211，所述电压比较器的输出端连接至所述第三薄膜晶体管T3的栅极；所述第三薄膜晶体管T3的源极接地，所述第三薄膜晶体管T3的漏极连接所述Micro-LED发光单元30。\n\n[0042]具体地，所述PAM控制单元22包括第四薄膜晶体管T4，所述第四薄膜晶体管T4的源级接入所述PAM电路数据信号(PAM_DATA)，所述第四薄膜晶体管T4的栅级接入PAM电路扫描信号(PAM_SCAN)，所述第四薄膜晶体管的漏级T4连接所述发光单元30。\n\n[0043]具体地，所述发光单元30包括第三电容C3、第五薄膜晶体管T5以及Micro-LED光源D，所述第三电容C3的一端连接所述控制单元20，所述第三电容C3的另一端接地；所述第五薄膜晶体管T5的栅极连接所述控制单元20以及所述第三电容C3，所述第五薄膜晶体管T5的源极接地，所述第五薄膜晶体管T5的漏极连接所述Micro-LED光源D的一端，所述Micro-LED光源D的另一端连接电源正级输入端电压(VDD)。\n\n[0044]如图3B所示，为本申请第一实施例提供的显示器的驱动电路中各种信号的时序图(以480*RGB*270*120HZ刷新速度为例)。具体地，图3B示出了本申请第一实施例提供的显示器的驱动电路中扫频电压(SWEEP)、所述PWM电路数据信号(PWM_DATA)、所述PAM电路扫描信号(PAM_SCAN)的电压、所述PAM电路数据信号(PAM_DATA)的电压、所述PWM控制单元(PWM)的输出电压以及所述发光单元30中Micro-LED发光信号的电流(I-LED)根据时间的变化，其具体过程如下：\n\n[0045]在第一时间段T1(3ms)时，所述扫频控制模块211充电，所述扫频控制模块211的扫频电压(SWEEP)为14V，所述PAM电路扫描信号(PAM_SCAN)逐行扫描，并写入所述PAM电路数据信号(PAM_DATA)，所述PAM电路数据信号(PAM_DATA)的电压为8V；之后，所述PWM电路扫描信号(PWM_SCAN)逐行扫描，并写入所述PWM电路数据信号(PWM_DATA),所述PWM电路数据信号(PWM_DATA)的电压为12V；之后，所述PWM电路数据信号(PWM_DATA)输出到所述PWM控制单元，所述PWM控制单元将不同的所述PWM电路数据信号(PWM_DATA)转换为Micro-LED的发光控制时间，最终输入至所述发光单元30，使Micro-LED发光，所述PWM控制单元(PWM)的输出电压为-7V。\n\n[0046]在第二时间段T2(3ms)时，所述扫频控制模块211的扫频电压(SWEEP)下降，开始放电。当所述扫频控制模块211的扫频电压(SWEEP)高于所述PWM电路数据信号(PWM_DATA)的输入电压时，AMP输入低电平，所述PWM时间控制模块213中的电压比较器的输出端输出扫频电压至所述发光单元30，此时，所述PWM数据控制模块212关闭，所述PAM电路数据信号(PAM_DATA)控制驱动所述薄膜晶体管T5流过电流，所述发光单元30发光。\n\n[0047]在第三时间段T3(3ms)时，所述扫频控制模块211的扫频电压(SWEEP)继续放电。当所述扫频控制模块211的扫频电压(SWEEP)小于所述PWM电路数据信号(PWM_DATA)的输入电压时，AMP输入高电平，所述PWM时间控制模块213中的电压比较器的输出端输出所述PWM控制单元(PWM)的输出电压至所述发光单元30，此时，所述PWM数据控制模块212开启，并将所述PAM电路数据信号(PAM_DATA)的电压释放，控制驱动所述薄膜晶体管T5关闭，所述发光单元30熄灭。\n\n[0048]本申请第一实施例提供的显示器的驱动电路利用电压比较器，实现电压大小转化为发光时间长短功能。\n\n[0049]如图4所示，为本申请第二实施例提供的显示器的驱动电路图。其中，本申请第二实施例与本申请第一实施例的唯一不同之处仅在于，所述PWM时间控制模块213还包括电压跟随器模块2131，所述电压跟随器模块2131包括电压跟随器，所述电压跟随器的正向输入端连接至所述第二电容C2的一端以及所述PWM数据控制模块212，所述电压跟随器的反向输入端连接至所述电压比较器的正向输入端，所述电压跟随器的输出端连接至所述电压比较器的正向输入端。\n\n[0050]本申请第二实施例提供的显示器的驱动电路，利用电压跟随器，能够克服所述PWM电路数据信号(PWM_DATA)受所述扫频电压(SWEEP)下降引起的耦合现象，进而克服TFT阈值电压引起的亮度不均，同时提高充电率。\n\n[0051]如图5所示，为本申请实施例提供的显示器的驱动电路中不同PWM_DATA电压下Micro-LED的发光时间对比示意图。其中图5的实验结果显示，不同大小的所述PWM电路数据信号(PWM_DATA)的输入电压下，可以实现所述发光单元30不同的发光时间控制，即可切分出不同等级的灰阶。\n\n[0052]本申请实施例所提供的显示器的驱动电路，将相互独立的PWM控制单元以及PAM控制单元同时控制Micro-LED发光单元驱动发光，在解决PAM驱动色偏移的问题的同时，克服TFT阈值电压引起的亮度不均，使得显示器充电时间长、数据带宽要求一般以及可支持高分辨率，进一步提高了显示器的显示效果。\n\n[0053]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0054]以上对本申请实施例所提供的一种显示器的驱动电路进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10791, 23845, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种Micro-LED显示面板及其制备方法与邦定材料。\n\n背景技术\n\n[0002]Micro LED(Micro Light-Emitting Diode,微型发光二极管)技术，即LED微缩化和矩阵化技术，指的是在一个芯片上集成的高密度微小尺寸的LED阵列。相较目前应用的LCD(Liquid Crystal Display，液晶显示器)、OLED(Organic Light-Emitting Diode,有机发光二极管)显示器件相比，具有反应快、高色域、高PPI、低能耗等优势，成为未来显示技术的研究热点之一。\n\n[0003]在Micro LED显示面板的制备过程中，需将制备好的大量Micro-LED芯片转移并邦定至驱动电路的对应位置，现有常用的邦定材料通常为锡，其导热性能一般，无法快速地将mirco-LED芯片在工作时产生的热量传导转移，导致mirco-LED芯片长期处于高温环境中，如此会大大加快mirco-LED芯片的老化进程，从而降低Micro LED显示面板的使用寿命，此现象在大功率的mirco-LED器件中更为严重。\n\n发明内容\n\n[0004]为解决上述问题，第一方面，本发明提供一种Micro-LED显示面板，所述Micro-LED显示面板包括：\n\n[0005]基板；\n\n[0006]驱动电路层，设于所述基板上；\n\n[0007]多个Micro-LED芯片，所述Micro-LED芯片通过邦定材料邦定至驱动电路层上，其中，所述邦定材料包括实现邦定功能的载体材料以及提升导热性能的导热材料。\n\n[0008]进一步地，所述导热材料选自碳纳米材料与银纳米材料中的至少一者，所述载体材料选自锡与铟中的至少一者。\n\n[0009]进一步地，所述碳纳米材料选自石墨烯、碳纳米管、碳纳米纤维以及碳纳米球中的至少一者。\n\n[0010]进一步地，所述驱动电路层上设有触点，所述Micro-LED芯片上设有接触电极，所述接触电极通过所述邦定材料邦定至所述触点上。\n\n[0011]第二方面，本发明还提供了一种Micro-LED显示面板的制备方法，包括：\n\n[0012]S10:提供第一基板，在所述第一基板上形成驱动电路层，并在所述驱动电路层上形成多个阵列排布的触点；\n\n[0013]S20:提供第二基板，在所述第二基板上形成多个Micro-LED芯片，并在所述多个Micro-LED芯片上各自形成接触电极；\n\n[0014]S30:将用于实现邦定功能的载体材料加入容器中并加热至熔融状态，再加入导热材料，使得所述导热材料均匀分散至所述载体材料中，制得邦定材料；\n\n[0015]S40:取定量的所述邦定材料于所述触点上；以及\n\n[0016]S50:将所述多个Micro-LED芯片从所述第二基板剥离，转移至所述第一基板上，使得所述多个Micro-LED芯片通过所述邦定材料一一邦定于所述触点上。\n\n[0017]进一步地，所述导热材料选自碳纳米材料与银纳米材料中的至少一者，所述载体材料选自锡与铟中的至少一者。\n\n[0018]进一步地，所述碳纳米材料选自石墨烯、碳纳米管、碳纳米纤维以及碳纳米球中的至少一者。\n\n[0019]第三方面，本发明还提供了一种邦定材料，所述邦定材料包括：实现邦定功能的载体材料以及提升导热性能的导热材料，所述导热材料均匀分散于所述载体材料中。\n\n[0020]进一步地，所述导热材料选自碳纳米材料与银纳米材料中的至少一者，所述载体材料选自锡与铟中的至少一者。\n\n[0021]进一步地，所述碳纳米材料选自石墨烯、碳纳米管、碳纳米纤维以及碳纳米球中的至少一者。\n\n[0022]有益效果：本发明提供了一种Micro-LED显示面板及其制备方法与邦定材料，所述邦定材料包括实现邦定功能的载体材料以及提升导热性能的导热材料，通过导热材料的添加，提升邦定材料的导热性能。使用该邦定材料将Micro-LED芯片邦定至驱动电极上，藉由其较好的导热性能，使得Micro-LED芯片工作时产生的热量被快速传导走，有效降低Micro-LED芯片工作时的温度，从而可有效延缓mirco-LED芯片的老化进程，从而延长Micro LED显示面板的使用寿命。\n\n附图说明\n\n[0023]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0024]图1是本发明实施例提供的一种Micro-LED显示面板的截面结构示意图；\n\n[0025]图2是本发明实施例提供的一种Micro-LED显示面板的制备方法文字流程示意图；\n\n[0026]图3A-3D是本发明实施例提供的一种Micro-LED显示面板的制备方法结构流程示意图。\n\n具体实施方式\n\n[0027]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0028]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0029]在本申请中，“示例性”一词用来表示“用作例子、例证或说明”。本申请中被描述为“示例性”的任何实施例不一定被解释为比其它实施例更优选或更具优势。为了使本领域任何技术人员能够实现和使用本发明，给出了以下描述。在以下描述中，为了解释的目的而列出了细节。应当明白的是，本领域普通技术人员可以认识到，在不使用这些特定细节的情况下也可以实现本发明。在其它实例中，不会对公知的结构和过程进行详细阐述，以避免不必要的细节使本发明的描述变得晦涩。因此，本发明并非旨在限于所示的实施例，而是与符合本申请所公开的原理和特征的最广范围相一致。\n\n[0030]本发明实施例提供一种Micro-LED显示面板，该Micro-LED显示面板的截面结构示意图请参阅图1，具体地，包括如下结构：\n\n[0031]基板10，所述基板10根据实际显示形态需求，设为刚性基板或柔性基板，例如可为现广泛应用的柔性聚酰亚胺基板；\n\n[0032]驱动电路层101，设于所述基板10上，所述驱动电路层101通常由阵列排布的多个薄膜晶体管组成，各自独立地控制上方的Micro-LED的工作状态，以实现显示；\n\n[0033]多个Micro-LED芯片201(图中仅示例性地示出3个)，所述Micro-LED芯片通过邦定材料103邦定至驱动电路层101上，具体地，一一对应地邦定至驱动电路层101中阵列排布的多个薄膜晶体管的驱动电极上，并实现电性连接，其中，所述邦定材料包括实现邦定功能的载体材料以及提升导热性能的导热材料。\n\n[0034]一般地，邦定材料仅有实现邦定功能的载体材料组成，此种邦定材料的导热性能较为普通，而在本实施例中，还在载体材料中掺杂一定量的导热材料，以提升邦定材料整体导热性能(当然，所选择的导热材料的导热系数大于邦定材料的导热系数)，使得Micro-LED芯片工作时产生的热量快速传导走，有效降低Micro-LED芯片工作时的温度，从而可有效延缓mirco-LED芯片的老化进程，从而有效延长了Micro LED显示面板的使用寿命。\n\n[0035]在一实施例中，所述导热材料选用常用的高导热材料即可，例如可选自碳纳米材料与银纳米材料中的至少一者；\n\n[0036]另外，所述载体材料选自常用的邦定材料即可，例如可选自锡与铟中的至少一者。\n\n[0037]在一实施例中，所述碳纳米材料选自石墨烯、碳纳米管、碳纳米纤维以及碳纳米球中的至少一者。\n\n[0038]以石墨烯为例，其具有非常好的热传导性能。纯的无缺陷的单层石墨烯的导热系数高达5300W/mK，是目前为止导热系数最高的碳材料，高于单壁碳纳米管(3500W/mK)和多壁碳纳米管(3000W/mK)。当它作为载体时，导热系数也可达600W/mK。而常用的邦定材料金属锡在20摄氏度时的导热系数仅为67W/mK，远小于石墨烯的导热系数，故，通过导热材料的增加，可大大提升邦定材料的导热性能。\n\n[0039]在一实施例中，所述驱动电路层101上设有触点102，所述触点102为电性连接与驱动电路层101中各个驱动电极的导体，作为与Micro-LED芯片201邦定的中间介质；\n\n[0040]另外，所述Micro-LED芯片201上设有接触电极202，同样地，所述接触电极202作为与驱动电路层101邦定的中间介质，即，所述接触电极202通过所述邦定材料103邦定至所述触点102上，使得所述Micro-LED芯片201与所述驱动电路层101实现电性连接。\n\n[0041]本发明的另一实施例还提供了一种Micro-LED显示面板的制备方法，其流程示意图请参阅图2以及图3A-3D，具体的，包括如下步骤：\n\n[0042]S10:提供第一基板10，在所述第一基板10上形成驱动电路层101，并在所述驱动电路层101上形成多个阵列排布的触点102，即形成如图3A所示的结构，\n\n[0043]其中，所述基板10根据实际显示形态需求，设为刚性基板或柔性基板，例如可为先广泛应用的柔性聚酰亚胺基板，\n\n[0044]形成所述驱动电路层101的步骤具体包括形成阵列排布的多个薄膜晶体管，即在所述第一基板10上依次沉积不同的薄膜，通常包括栅极，源漏电极，有源层，绝缘层，以及用于驱动上层Micro-LED芯片的驱动电极，\n\n[0045]在所述驱动电路层101上形成多个阵列排布的触点102的具体步骤通常包括在所述驱动电路层101中各个驱动电极上一一对应的形成可导电的材料作为触点，作为后续与Micro-LED芯片邦定的中间介质；\n\n[0046]S20:提供第二基板20，在所述第二基板20上形成多个Micro-LED芯片201，并在所述多个Micro-LED芯片201上各自形成接触电极202，即形成如图3B所示的结构，\n\n[0047]所述Micro-LED芯片201根据现有常规的Micro-LED制作工艺进行制备即可，通常包括形成红光/绿光/蓝光以及白光Micro-LED芯片；\n\n[0048]S30:将用于实现邦定功能的载体材料加入容器中并加热至熔融状态，再加入导热材料，使得所述导热材料均匀分散至所述载体材料中，制得邦定材料，其中，通过超声分散或搅拌的方式使得所述导热材料均匀分散至所述载体材料中，同时在分散过程中需处于高温环境中，使得载体材料保持熔融状态，通过掺杂了部分导热材料，使得所制得的邦定材料的整体导热率得到提升；\n\n[0049]S40:取定量的所述邦定材料103于所述触点上，即形成如图3C所示的结构，此处的邦定材料处于熔融状态；以及\n\n[0050]S50:将所述多个Micro-LED芯片201从所述第二基板剥离，转移至所述第一基板10上，使得所述多个Micro-LED芯片201通过所述邦定材料103一一邦定于所述触点102上，即形成如图3D所示的结构，\n\n[0051]其中，将所述多个Micro-LED芯片转移至第一基板的方法通常为当前普遍采用的巨量转移技术，不限于静电吸附、镭射激光烧触等分支技术。\n\n[0052]另外，在本发明的另一实施例中，还提供了一种邦定材料，所述邦定材料包括：实现邦定功能的载体材料以及提升导热性能的导热材料，所述导热材料均匀分散于所述载体材料中。\n\n[0053]其中，所述导热材料选自碳纳米材料与银纳米材料中的至少一者，所述载体材料选自锡与铟中的至少一者。\n\n[0054]进一步地，所述碳纳米材料选自石墨烯、碳纳米管、碳纳米纤维以及碳纳米球中的至少一者。\n\n[0055]本实施例所提供的邦定材料可应用于Micro-LED、Mini-LED、LED行业，也可以用于其他需进行元器件邦定的电子领域，本实施例在此不作限定。\n\n[0056]需要说明的是，上述Micro-LED显示面板实施例中仅描述了上述结构，可以理解的是，除了上述结构之外，还可以根据需要包括任何其他的必要结构，具体此处不作限定。\n\n[0057]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见上文针对其他实施例的详细描述，此处不再赘述。\n\n[0058]以上对本发明实施例所提供的一种Micro-LED显示面板及其制备方法与邦定材料进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种Micro-LED显示面板及其制备方法与邦定材料。\n\n背景技术\n\n[0002]Micro LED(Micro Light-Emitting Diode,微型发光二极管)技术，即LED微缩化和矩阵化技术，指的是在一个芯片上集成的高密度微小尺寸的LED阵列。相较目前应用的LCD(Liquid Crystal Display，液晶显示器)、OLED(Organic Light-Emitting Diode,有机发光二极管)显示器件相比，具有反应快、高色域、高PPI、低能耗等优势，成为未来显示技术的研究热点之一。\n\n[0003]在Micro LED显示面板的制备过程中，需将制备好的大量Micro-LED芯片转移并邦定至驱动电路的对应位置，现有常用的邦定材料通常为锡，其导热性能一般，无法快速地将mirco-LED芯片在工作时产生的热量传导转移，导致mirco-LED芯片长期处于高温环境中，如此会大大加快mirco-LED芯片的老化进程，从而降低Micro LED显示面板的使用寿命，此现象在大功率的mirco-LED器件中更为严重。\n\n发明内容\n\n[0004]为解决上述问题，第一方面，本发明提供一种Micro-LED显示面板，所述Micro-LED显示面板包括：\n\n[0005]基板；\n\n[0006]驱动电路层，设于所述基板上；\n\n[0007]多个Micro-LED芯片，所述Micro-LED芯片通过邦定材料邦定至驱动电路层上，其中，所述邦定材料包括实现邦定功能的载体材料以及提升导热性能的导热材料。\n\n[0008]进一步地，所述导热材料选自碳纳米材料与银纳米材料中的至少一者，所述载体材料选自锡与铟中的至少一者。\n\n[0009]进一步地，所述碳纳米材料选自石墨烯、碳纳米管、碳纳米纤维以及碳纳米球中的至少一者。\n\n[0010]进一步地，所述驱动电路层上设有触点，所述Micro-LED芯片上设有接触电极，所述接触电极通过所述邦定材料邦定至所述触点上。\n\n[0011]第二方面，本发明还提供了一种Micro-LED显示面板的制备方法，包括：\n\n[0012]S10:提供第一基板，在所述第一基板上形成驱动电路层，并在所述驱动电路层上形成多个阵列排布的触点；\n\n[0013]S20:提供第二基板，在所述第二基板上形成多个Micro-LED芯片，并在所述多个Micro-LED芯片上各自形成接触电极；\n\n[0014]S30:将用于实现邦定功能的载体材料加入容器中并加热至熔融状态，再加入导热材料，使得所述导热材料均匀分散至所述载体材料中，制得邦定材料；\n\n[0015]S40:取定量的所述邦定材料于所述触点上；以及\n\n[0016]S50:将所述多个Micro-LED芯片从所述第二基板剥离，转移至所述第一基板上，使得所述多个Micro-LED芯片通过所述邦定材料一一邦定于所述触点上。\n\n[0017]进一步地，所述导热材料选自碳纳米材料与银纳米材料中的至少一者，所述载体材料选自锡与铟中的至少一者。\n\n[0018]进一步地，所述碳纳米材料选自石墨烯、碳纳米管、碳纳米纤维以及碳纳米球中的至少一者。\n\n[0019]第三方面，本发明还提供了一种邦定材料，所述邦定材料包括：实现邦定功能的载体材料以及提升导热性能的导热材料，所述导热材料均匀分散于所述载体材料中。\n\n[0020]进一步地，所述导热材料选自碳纳米材料与银纳米材料中的至少一者，所述载体材料选自锡与铟中的至少一者。\n\n[0021]进一步地，所述碳纳米材料选自石墨烯、碳纳米管、碳纳米纤维以及碳纳米球中的至少一者。\n\n[0022]有益效果：本发明提供了一种Micro-LED显示面板及其制备方法与邦定材料，所述邦定材料包括实现邦定功能的载体材料以及提升导热性能的导热材料，通过导热材料的添加，提升邦定材料的导热性能。使用该邦定材料将Micro-LED芯片邦定至驱动电极上，藉由其较好的导热性能，使得Micro-LED芯片工作时产生的热量被快速传导走，有效降低Micro-LED芯片工作时的温度，从而可有效延缓mirco-LED芯片的老化进程，从而延长Micro LED显示面板的使用寿命。\n\n附图说明\n\n[0023]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0024]图1是本发明实施例提供的一种Micro-LED显示面板的截面结构示意图；\n\n[0025]图2是本发明实施例提供的一种Micro-LED显示面板的制备方法文字流程示意图；\n\n[0026]图3A-3D是本发明实施例提供的一种Micro-LED显示面板的制备方法结构流程示意图。\n\n具体实施方式\n\n[0027]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0028]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0029]在本申请中，“示例性”一词用来表示“用作例子、例证或说明”。本申请中被描述为“示例性”的任何实施例不一定被解释为比其它实施例更优选或更具优势。为了使本领域任何技术人员能够实现和使用本发明，给出了以下描述。在以下描述中，为了解释的目的而列出了细节。应当明白的是，本领域普通技术人员可以认识到，在不使用这些特定细节的情况下也可以实现本发明。在其它实例中，不会对公知的结构和过程进行详细阐述，以避免不必要的细节使本发明的描述变得晦涩。因此，本发明并非旨在限于所示的实施例，而是与符合本申请所公开的原理和特征的最广范围相一致。\n\n[0030]本发明实施例提供一种Micro-LED显示面板，该Micro-LED显示面板的截面结构示意图请参阅图1，具体地，包括如下结构：\n\n[0031]基板10，所述基板10根据实际显示形态需求，设为刚性基板或柔性基板，例如可为现广泛应用的柔性聚酰亚胺基板；\n\n[0032]驱动电路层101，设于所述基板10上，所述驱动电路层101通常由阵列排布的多个薄膜晶体管组成，各自独立地控制上方的Micro-LED的工作状态，以实现显示；\n\n[0033]多个Micro-LED芯片201(图中仅示例性地示出3个)，所述Micro-LED芯片通过邦定材料103邦定至驱动电路层101上，具体地，一一对应地邦定至驱动电路层101中阵列排布的多个薄膜晶体管的驱动电极上，并实现电性连接，其中，所述邦定材料包括实现邦定功能的载体材料以及提升导热性能的导热材料。\n\n[0034]一般地，邦定材料仅有实现邦定功能的载体材料组成，此种邦定材料的导热性能较为普通，而在本实施例中，还在载体材料中掺杂一定量的导热材料，以提升邦定材料整体导热性能(当然，所选择的导热材料的导热系数大于邦定材料的导热系数)，使得Micro-LED芯片工作时产生的热量快速传导走，有效降低Micro-LED芯片工作时的温度，从而可有效延缓mirco-LED芯片的老化进程，从而有效延长了Micro LED显示面板的使用寿命。\n\n[0035]在一实施例中，所述导热材料选用常用的高导热材料即可，例如可选自碳纳米材料与银纳米材料中的至少一者；\n\n[0036]另外，所述载体材料选自常用的邦定材料即可，例如可选自锡与铟中的至少一者。\n\n[0037]在一实施例中，所述碳纳米材料选自石墨烯、碳纳米管、碳纳米纤维以及碳纳米球中的至少一者。\n\n[0038]以石墨烯为例，其具有非常好的热传导性能。纯的无缺陷的单层石墨烯的导热系数高达5300W/mK，是目前为止导热系数最高的碳材料，高于单壁碳纳米管(3500W/mK)和多壁碳纳米管(3000W/mK)。当它作为载体时，导热系数也可达600W/mK。而常用的邦定材料金属锡在20摄氏度时的导热系数仅为67W/mK，远小于石墨烯的导热系数，故，通过导热材料的增加，可大大提升邦定材料的导热性能。\n\n[0039]在一实施例中，所述驱动电路层101上设有触点102，所述触点102为电性连接与驱动电路层101中各个驱动电极的导体，作为与Micro-LED芯片201邦定的中间介质；\n\n[0040]另外，所述Micro-LED芯片201上设有接触电极202，同样地，所述接触电极202作为与驱动电路层101邦定的中间介质，即，所述接触电极202通过所述邦定材料103邦定至所述触点102上，使得所述Micro-LED芯片201与所述驱动电路层101实现电性连接。\n\n[0041]本发明的另一实施例还提供了一种Micro-LED显示面板的制备方法，其流程示意图请参阅图2以及图3A-3D，具体的，包括如下步骤：\n\n[0042]S10:提供第一基板10，在所述第一基板10上形成驱动电路层101，并在所述驱动电路层101上形成多个阵列排布的触点102，即形成如图3A所示的结构，\n\n[0043]其中，所述基板10根据实际显示形态需求，设为刚性基板或柔性基板，例如可为先广泛应用的柔性聚酰亚胺基板，\n\n[0044]形成所述驱动电路层101的步骤具体包括形成阵列排布的多个薄膜晶体管，即在所述第一基板10上依次沉积不同的薄膜，通常包括栅极，源漏电极，有源层，绝缘层，以及用于驱动上层Micro-LED芯片的驱动电极，\n\n[0045]在所述驱动电路层101上形成多个阵列排布的触点102的具体步骤通常包括在所述驱动电路层101中各个驱动电极上一一对应的形成可导电的材料作为触点，作为后续与Micro-LED芯片邦定的中间介质；\n\n[0046]S20:提供第二基板20，在所述第二基板20上形成多个Micro-LED芯片201，并在所述多个Micro-LED芯片201上各自形成接触电极202，即形成如图3B所示的结构，\n\n[0047]所述Micro-LED芯片201根据现有常规的Micro-LED制作工艺进行制备即可，通常包括形成红光/绿光/蓝光以及白光Micro-LED芯片；\n\n[0048]S30:将用于实现邦定功能的载体材料加入容器中并加热至熔融状态，再加入导热材料，使得所述导热材料均匀分散至所述载体材料中，制得邦定材料，其中，通过超声分散或搅拌的方式使得所述导热材料均匀分散至所述载体材料中，同时在分散过程中需处于高温环境中，使得载体材料保持熔融状态，通过掺杂了部分导热材料，使得所制得的邦定材料的整体导热率得到提升；\n\n[0049]S40:取定量的所述邦定材料103于所述触点上，即形成如图3C所示的结构，此处的邦定材料处于熔融状态；以及\n\n[0050]S50:将所述多个Micro-LED芯片201从所述第二基板剥离，转移至所述第一基板10上，使得所述多个Micro-LED芯片201通过所述邦定材料103一一邦定于所述触点102上，即形成如图3D所示的结构，\n\n[0051]其中，将所述多个Micro-LED芯片转移至第一基板的方法通常为当前普遍采用的巨量转移技术，不限于静电吸附、镭射激光烧触等分支技术。\n\n[0052]另外，在本发明的另一实施例中，还提供了一种邦定材料，所述邦定材料包括：实现邦定功能的载体材料以及提升导热性能的导热材料，所述导热材料均匀分散于所述载体材料中。\n\n[0053]其中，所述导热材料选自碳纳米材料与银纳米材料中的至少一者，所述载体材料选自锡与铟中的至少一者。\n\n[0054]进一步地，所述碳纳米材料选自石墨烯、碳纳米管、碳纳米纤维以及碳纳米球中的至少一者。\n\n[0055]本实施例所提供的邦定材料可应用于Micro-LED、Mini-LED、LED行业，也可以用于其他需进行元器件邦定的电子领域，本实施例在此不作限定。\n\n[0056]需要说明的是，上述Micro-LED显示面板实施例中仅描述了上述结构，可以理解的是，除了上述结构之外，还可以根据需要包括任何其他的必要结构，具体此处不作限定。\n\n[0057]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见上文针对其他实施例的详细描述，此处不再赘述。\n\n[0058]以上对本发明实施例所提供的一种Micro-LED显示面板及其制备方法与邦定材料进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10792, 23846, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种像素电路及其驱动方法。\n\n背景技术\n\n[0002]有机发光器件根据驱动场致发光(Electroluminescent，EL)元件的方式，分为电流驱动型和电压驱动型，但有机发光器件的栅极与源极之间的电压随时间会发生漂移，导致流经元件的电流发生变化，致使显示装置易出现显示不均匀的问题。\n\n发明内容\n\n[0003]本申请实施例提供一种像素电路及其驱动方法，可以补偿驱动晶体管的阈值电压，保证发光器件发光的稳定性。\n\n[0004]本申请提供一种像素电路，包括：发光器件、驱动晶体管、开关模块、补偿模块及初始化模块；\n\n[0005]所述发光器件的一极接入第一公共电压端，所述发光器件的另一极经所述开关模块与所述驱动晶体管的第二极连接；\n\n[0006]所述驱动晶体管的第一极经所述开关模块与第二公共电压端和数据信号连接，所述驱动晶体管用于在发光阶段根据数据信号写入阶段写入的数据信号驱动所述发光器件发光；所述驱动晶体管的栅极及第二极连接所述补偿模块，以对所述驱动晶体管的阈值电压进行补偿；\n\n[0007]所述开关模块连接扫描线、发光信号线、所述数据信号及所述第二公共电压端，所述开关模块用于在数据信号写入阶段为所述驱动晶体管的第一极写入数据信号，并通过所述补偿模块对所述驱动晶体管的阈值电压进行补偿；在所述发光阶段通过所述初始化模块为所述补偿模块写入初始化信号，并使所述发光器件发光；\n\n[0008]所述补偿模块连接所述第二公共电压端和所述扫描线，所述补偿模块用于对所述驱动晶体管的阈值电压进行补偿；\n\n[0009]所述初始化模块连接所述扫描线和所述发光信号线，所述初始化模块用于在所述数据信号写入阶段为所述发光器件进行初始化，在所述发光阶段为所述补偿模块写入所述初始化信号。\n\n[0010]在一些实施例中，所述补偿模块包括第一晶体管、第二晶体管、第一存储电容及第二存储电容；\n\n[0011]所述第一晶体管的栅极与所述扫描线连接，所述第一晶体管的第一极与所述驱动晶体管的第二极连接，所述第一晶体管的第二极与所述驱动晶体管的栅极连接；所述第一晶体管用于在所述数据信号写入阶段对所述驱动晶体管的阈值电压进行补偿；\n\n[0012]所述第二晶体管的栅极与所述扫描线连接，所述第二晶体管的第一极与所述第一存储电容的第二极连接，所述第二晶体管的第二极与所述驱动晶体管的栅极连接；所述第二晶体管用于控制所述第一存储电容和所述第二存储电容的存储信号，以维持所述驱动晶体管的栅极电压；\n\n[0013]所述第一存储电容的第一极接入所述第二公共电压端；\n\n[0014]所述第二存储电容的第一极接入所述第二公共电压端，所述第二存储电容的第二极与所述第二晶体管的第二极连接。\n\n[0015]在一些实施例中，所述初始化模块包括第三晶体管和第四晶体管；\n\n[0016]所述第三晶体管的栅极与所述发光信号线连接，所述第三晶体管的第一极与所述第二晶体管的第一极连接，所述第三晶体管的第二极接入所述初始化信号；\n\n[0017]所述第四晶体管的栅极与所述扫描线连接，所述第四晶体管的第一极接入所述初始化信号，所述第四晶体管的第二极与所述发光器件的第一极连接。\n\n[0018]在一些实施例中，所述开关模块包括第五晶体管、第六晶体管、第七晶体管；\n\n[0019]所述第五晶体管的栅极与所述扫描线连接，所述第五晶体管的第一极接入所述数据信号，所述第五晶体管的第二极与所述驱动晶体管的第一极连接；\n\n[0020]所述第六晶体管的栅极与所述发光信号线连接，所述第六晶体管的第一极与所述第二公共电压端连接，所述第六晶体管的第二极与所述驱动晶体管的第一极连接；\n\n[0021]所述第七晶体管的栅极与所述发光信号线连接，所述第七晶体管的第一极与所述驱动晶体管的第二极连接，所述第七晶体管的第二极与所述发光器件的第一极连接。\n\n[0022]在一些实施例中，所述第一公共电压端为直流低电源，所述第二公共电压端为直流高电源。\n\n[0023]在一些实施例中，所述初始化信号为直流低电源。\n\n[0024]在一些实施例中，所述发光器件为发光二极管。\n\n[0025]在一些实施例中，所述发光器件包括次毫米发光二极管、微型发光二极管和有机发光二极管。\n\n[0026]本申请还提供一种像素驱动方法，用于驱动所述的像素电路，所述像素驱动方法包括：\n\n[0027]在数据信号写入阶段，所述扫描线载入的扫描信号使所述开关模块、所述补偿模块、所述初始化模块工作，以将所述数据信号写入至所述驱动晶体管的栅极及所述补偿模块，所述补偿模块维持所述驱动晶体管的栅极电压并对所述驱动晶体管中的阈值电压的漂移进行补偿；所述初始化模块对所述发光器件进行初始化；\n\n[0028]在发光阶段，所述发光信号线载入的发光信号使所述开关模块、所述初始化模块工作，所述补偿模块维持所述驱动晶体管导通，驱动所述发光器件发光，所述初始化模块将所述初始化信号写入所述补偿模块。\n\n[0029]本申请还提供一种像素电路，包括：\n\n[0030]发光器件，所述发光器件的阴极接入公共接地电压端；\n\n[0031]第一存储电容，所述第一存储电容的上极板接入电源电压端；\n\n[0032]第二存储电容，所述第二存储电容的上极板接入电源电压端；\n\n[0033]第一晶体管，所述第一晶体管的栅极与扫描线连接，所述第一晶体管的源极与第八晶体管的漏极连接，所述第一晶体管的漏极与所述第二存储电容的下极板连接；\n\n[0034]第二晶体管，所述第二晶体管的栅极与所述扫描线连接，所述第二晶体管的源极与所述第一存储电容的下极板连接，所述第二晶体管的漏极与所述第二存储电容的下极板连接；\n\n[0035]第三晶体管，所述第三晶体管的栅极与发光信号线连接，所述第三晶体管的源极与所述第二晶体管的源极连接，所述第三晶体管的漏极接入初始化电压端；\n\n[0036]第四晶体管，所述第四晶体管的栅极与所述扫描线连接，所述第四晶体管的源极接入所述初始化电压端，所述第四晶体管的漏极与所述发光器件的阳极连接；\n\n[0037]第五晶体管，所述第五晶体管的栅极与所述扫描线连接，所述第五晶体管的源极与数据线连接，所述第五晶体管的漏极与所述第八晶体管的源极连接；\n\n[0038]第六晶体管，所述第六晶体管的栅极与所述发光信号线连接，所述第六晶体管的源极接入电源电压端，所述第六晶体管的漏极与所述第五晶体管的漏极连接；\n\n[0039]第七晶体管，所述第七晶体管的栅极与所述发光信号线连接，所述第七晶体管的源极与所述第一晶体管的源极连接，所述第七晶体管的漏极与所述发光器件的阳极连接；\n\n[0040]第八晶体管，所述第八晶体管的栅极与第一晶体管的漏极连接，所述第八晶体管的源极与所述第五晶体管的漏极连接，所述第八晶体管的漏极与所述第七晶体管的源极连接。\n\n[0041]本申请实施例提供的像素电路及其驱动方法，包括发光器件、驱动晶体管、开关模块、补偿模块及初始化模块；在数据信号写入阶段，所述数据信号写入至所述驱动晶体管的栅极及所述补偿模块，所述补偿模块维持所述驱动晶体管的栅极电压并对所述驱动晶体管中的阈值电压的漂移进行补偿；所述初始化模块对所述发光器件进行初始化；在发光阶段，所述发光信号线载入的发光信号使所述开关模块、所述初始化模块工作，所述补偿模块维持所述驱动晶体管导通，驱动所述发光器件发光，所述初始化模块将所述初始化信号写入所述补偿模块，以保证所述发光器件发光的稳定性。\n\n附图说明\n\n[0042]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0043]图1为本申请的实施例提供的像素电路的原理图；\n\n[0044]图2A为本申请的实施例提供的像素电路的结构示意图；\n\n[0045]图2B为图2A提供的像素电路的工作时序图；\n\n[0046]图3为本申请的实施例提供的像素电路的结构示意图。\n\n具体实施方式\n\n[0047]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0048]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0049]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0050]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0051]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0052]具体的，请参阅图1，其为本申请实施例提供的像素电路的原理图；所述像素电路包括：发光器件LED、驱动晶体管Td、开关模块101、补偿模块102及初始化模块103；\n\n[0053]所述发光器件LED的一极接入第一公共电压端VSS，所述发光器件LED的另一极经所述开关模块101与所述驱动晶体管Td的第二极连接；\n\n[0054]所述驱动晶体管Td的第一极经所述开关模块101与第二公共电压端VDD和数据信号Vdata连接，所述驱动晶体管Td用于在发光阶段S2根据数据信号写入阶段S1写入的数据信号Vdata驱动所述发光器件LED发光；所述驱动晶体管Td的栅极及第二极连接所述补偿模块102，以对所述驱动晶体管Td的阈值电压Vth进行补偿；\n\n[0055]所述开关模块101连接扫描线Scan(n)、发光信号线EM(n)、所述数据信号Vdata及所述第二公共电压端VDD，所述开关模块101用于在数据信号写入阶段S1为所述驱动晶体管Td的第一极写入数据信号Vdata，并通过所述补偿模块102对所述驱动晶体管Td的阈值电压Vth进行补偿；在所述发光阶段S2通过所述初始化模块103为所述补偿模块102写入初始化信号VI，并使所述发光器件LED发光；\n\n[0056]所述补偿模块102连接所述第二公共电压端VDD和所述扫描线Scan(n)，所述补偿模块102用于对所述驱动晶体管Td的阈值电压Vth进行补偿；\n\n[0057]所述初始化模块103连接所述扫描线Scan(n)和所述发光信号线EM(n)，所述初始化模块103用于在所述数据信号写入阶段S1为所述发光器件LED进行初始化，在所述发光阶段S2为所述补偿模块102写入所述初始化信号VI。\n\n[0058]本申请的实施例提供的像素电路，在所述数据信号写入阶段S1通过所述开关模块101及所述补偿模块102维持所述驱动晶体管Td的栅极电压，并对所述驱动晶体管Td的阈值电压Vth进行补偿；在所述的发光阶段S2通过所述开关模块101和所述初始化模块103为所述补偿模块102写入所述初始化信号VI，通过所述补偿模块102维持所述驱动晶体管Td导通，驱动所述发光器件LED发光，以保证所述发光器件的发光的稳定性。\n\n[0059]此外由于所述像素电路中只涉及所述扫描线Scan(n)和所述发光信号线EM(n)，因此可以降低排线密度，减少因膜层残留造成的点线类不良，提高响应速度和刷新率，还可降低生产成本。\n\n[0060]所述第一公共电压端VSS为直流低电源，所述第二公共电压端VDD为直流高电源。具体地，所述第一公共电压端VSS为-1V～-5V；进一步地，所述第一公共电压端VSS为-2.55V。\n\n[0061]所述初始化信号VI为直流低电源；具体地，所述初始化信号VI为-3V～-5V。\n\n[0062]所述发光器件LED为发光二极管，具体地，所述发光器件LED包括次毫米发光二极管(Mini-LED)、微型发光二极管(Micro-LED)和有机发光二极管(OLED)。\n\n[0063]在本申请实施例中，多个所述发光器件LED采用共阴极接法，具体地，参照图1，所述发光器件LED与所述第一公共电压端VSS连接的一极为阴极，所述发光器件LED经所述开关模块101与所述驱动晶体管Td的第二极连接的一极为阳极。此外，多个所述发光器件LED还可采用共阳极接法，多个所述发光器件LED采用共阴极接法时与采用共阳极接法时相似，本申请实施例中不再予以赘述。\n\n[0064]本申请实施例中所采用的晶体管包括薄膜晶体管、场效应晶体管；为区分晶体管中除栅极以外的源极与漏极，本申请的第一极可以为漏极或源极的一者，相应地，第二极为源极或漏极中的另一者。\n\n[0065]本申请还提供一种像素驱动方法，用于驱动所述的像素电路，所述像素驱动方法包括：\n\n[0066]在数据信号写入阶段S1，所述扫描线Scan(n)载入的扫描信号使所述开关模块101、所述补偿模块102、所述初始化模块103工作，以将所述数据信号Vdata写入至所述驱动晶体管Td的栅极及所述补偿模块102，所述补偿模块102维持所述驱动晶体管Td的栅极电压并对所述驱动晶体管Td中的阈值电压Vth的漂移进行补偿；所述初始化模块103对所述发光器件LED进行初始化；\n\n[0067]在发光阶段S2，所述发光信号线EM(n)载入的发光信号使所述开关模块101、所述初始化模块103工作，所述补偿模块101维持所述驱动晶体管Td导通，驱动所述发光器件LED发光，所述初始化模块103将所述初始化信号VI写入所述补偿模块102。\n\n[0068]请参阅图2A，其为本申请的实施例提供的像素电路的结构示意图，所述补偿模块102包括第一晶体管T1、第二晶体管T2、第一存储电容C1及第二存储电容C2；\n\n[0069]所述第一晶体管T1的栅极与所述扫描线Scan(n)连接，所述第一晶体管T1的第一极与所述驱动晶体管Td的第二极连接，所述第一晶体管T1的第二极与所述驱动晶体管Td的栅极连接；所述第一晶体管T1用于在所述数据信号写入阶段S1对所述驱动晶体管Td的阈值电压Vth进行补偿；\n\n[0070]所述第二晶体管T2的栅极与所述扫描线Scan(n)连接，所述第二晶体管T2的第一极与所述第一存储电容C1的第二极连接，所述第二晶体管T2的第二极与所述驱动晶体管Td的栅极连接；所述第二晶体管T2用于控制所述第一存储电容C1和所述第二存储电容C2的存储信号，以维持所述驱动晶体管Td的栅极电压；\n\n[0071]所述第一存储电容C1的第一极接入所述第二公共电压端VDD；\n\n[0072]所述第二存储电容C2的第一极接入所述第二公共电压端VDD，所述第二存储电容C2的第二极与所述第二晶体管T2的第二极连接。\n\n[0073]请继续参阅图2A，所述初始化模块102包括第三晶体管T3和第四晶体管T4；\n\n[0074]所述第三晶体管T3的栅极与所述发光信号线EM(n)连接，所述第三晶体管T3的第一极与所述第二晶体管T2的第一极连接，所述第三晶体管T3的第二极接入所述初始化信号VI；\n\n[0075]所述第四晶体管T4的栅极与所述扫描线Scan(n)连接，所述第四晶体管T4的第一极接入所述初始化信号VI，所述第四晶体管T4的第二极与所述发光器件LED的第一极连接。\n\n[0076]请继续参阅图2A，所述开关模块101包括第五晶体管T5、第六晶体管T6、第七晶体管T7；\n\n[0077]所述第五晶体管T5的栅极与所述扫描线Scan(n)连接，所述第五晶体管T5的第一极接入所述数据信号Vdata，所述第五晶体管T5的第二极与所述驱动晶体管Td的第一极连接；\n\n[0078]所述第六晶体管T6的栅极与所述发光信号线EM(n)连接，所述第六晶体管T6的第一极与所述第二公共电压端VDD连接，所述第六晶体管T6的第二极与所述驱动晶体管Td的第一极连接；\n\n[0079]所述第七晶体管T7的栅极与所述发光信号线EM(n)连接，所述第七晶体管T7的第一极与所述驱动晶体管Td的第二极连接，所述第七晶体管T7的第二极与所述发光器件LED的第一极连接。\n\n[0080]请参阅图2B，其为图2A提供的像素电路的工作时序图；其中，Vgate表示栅极电压。在每一刷新周期(1frame)内，包括两个阶段，分别为数据信号写入阶段S1和发光阶段S2。\n\n[0081]在所述数据信号写入阶段S1：所述扫描线Scan(n)载入的扫描信号为低电平时，所述开关模块101中的所述第五晶体管T5导通，所述补偿模块102中的所述第一晶体管T1、所述第二晶体管T2导通，所述初始化模块103中的所述第四晶体管T4导通；所述数据信号Vdata写入所述驱动晶体管Td的第一极，并对所述补偿模块102中的所述第一存储电容C1和所述第二存储电容C2进行充电，当所述驱动晶体管Td的栅极电位Vg与第一极Vs的电位差值Vgs小于所述驱动晶体管Td的阈值电压Vth时，所述驱动晶体管Td导通，所述补偿模块102维持所述驱动晶体管Td的栅极电压，以对所述驱动晶体管Td的阈值电压Vth进行补偿。\n\n[0082]具体地，由于所述第一存储电容C1的第二极在前一阶段(即发光阶段S2)写入所述初始化信号VI，在所述第二晶体管T2导通时，所述第一存储电容C1释放在前一阶段(即发光阶段S2)存储的所述初始化信号VI，所述第二晶体管T2通过所述第一存储电容C1释放的所述初始化信号VI进行充电，所述驱动晶体管Td的栅极电位Vg不断降低，直至所述驱动晶体管Td的栅极电位Vg与第一极电位Vs之差Vgs小于所述驱动晶体管Td的阈值电压Vth时，所述驱动晶体管Td导通，即Vgs＝Vg-Vs[0083]在理想情况下，可使所述驱动晶体管Td的栅极电位Vg与第一极电位Vs之差Vgs等于所述驱动晶体管Td的阈值电压Vth时，所述驱动晶体管Td导通，即Vgs＝Vg-Vs＝Vth，所述驱动晶体管Td导通。由所述第五晶体管T5导通，所述驱动晶体管Td的第一极写入所述数据信号Vdata和Vg-Vs＝Vth可得：Vg-Vdata＝Vth。\n\n[0084]所述第四晶体管T4导通，可对所述发光器件LED进行复位，以避免所述发光器件的第一极在所述数据信号写入阶段S1还残留有前一阶段(即发光阶段S2)写入的信号，导致所述发光器件LED在所述数据信号写入阶段S1发出微弱的光，影响对比度。\n\n[0085]其中，所述发光信号线EM(n)载入的所述发光信号在所述数据信号写入阶段S1为高电平，所述开关模块101中的所述第六晶体管T6、所述第七晶体管T7截止，所述初始化模块103中的所述第三晶体管T3截止。\n\n[0086]在所述发光阶段S2：所述发光信号线EM(n)载入的发光信号为低电平时，所述开关模块101中的所述第六晶体管T6、所述第七晶体管T7导通，所述初始化模块103中的所述第三晶体管T3导通；所述补偿模块102的所述第二晶体管T2的所述第一极写入所述初始化信号VI，所述第一存储电容C1存储所述初始化信号VI；所述第二存储电容C2通过所述第六晶体管T6维持所述驱动晶体管Td导通，所述第七晶体管T7导通使得所述驱动晶体管Td产生驱动电流I以驱动所述发光器件LED发光。\n\n[0087]其中，所述扫描信号线Scan(n)载入的所述扫描信号在所述发光阶段S2为高电平，所述开关模块101中的所述第五晶体管T5截止，所述补偿模块102中的所述第一晶体管T1、所述第二晶体管T2截止，所述初始化模块103中的所述第四晶体管T4截止。\n\n[0088]由所述第六晶体管T6导通，所述驱动晶体管Td的第一极写入所述第一公共电压信号VDD，可得所述驱动晶体管Td的栅极电位Vg与第一极电位Vs之差Vgs等于Vg-VDD；因此，由Vg-Vdata＝Vth、Vgs＝Vg-VDD和所述驱动电流I＝(CoxμmW/L)*(Vgs-Vth)2/2(其中，Cox、μm、W、L分别为晶体管的单位面积沟道电容、沟道迁移率、沟道宽和沟道长)可得所述驱动电流I＝(CoxμmW/L)*(Vg-VDD-Vg+Vdata)2/2＝(CoxμmW/L)*(Vdata-VDD)2/2；以此所述驱动电流I不受所述阈值电压Vth的变化的影响，所述发光器件LED可以保证发光的稳定性。\n\n[0089]请参阅图3，其为本申请的实施例提供的像素电路的结构示意图；本申请还提供一种像素电路，包括：\n\n[0090]发光器件LED，所述发光器件LED的阴极接入公共接地电压端VSS；\n\n[0091]第一存储电容C1，所述第一存储电容C1的上极板接入电源电压端VDD；\n\n[0092]第二存储电容C2，所述第二存储电容C2的上极板接入电源电压端VDD；\n\n[0093]第一晶体管T1，所述第一晶体管T1的栅极与扫描线Scan(n)连接，所述第一晶体管T1的源极S1与第八晶体管T8的漏极D8连接，所述第一晶体管T1的漏极D1与所述第二存储电容C2的下极板连接；\n\n[0094]第二晶体管T2，所述第二晶体管T2的栅极与所述扫描线Scan(n)连接，所述第二晶体管T2的源极S2与所述第一存储电容C1的下极板连接，所述第二晶体管T2的漏极D2与所述第二存储电容C2的下极板连接；\n\n[0095]第三晶体管T3，所述第三晶体管T3的栅极与发光信号线EM(n)连接，所述第三晶体管T3的源极S3与所述第二晶体管T2的源极S2连接，所述第三晶体管T3的漏极D3接入初始化电压端VI；\n\n[0096]第四晶体管T4，所述第四晶体管T4的栅极与所述扫描线Scan(n)连接，所述第四晶体管T4的源极S4接入所述初始化电压端VI，所述第四晶体管T4的漏极D4与所述发光器件LED的阳极连接；\n\n[0097]第五晶体管T5，所述第五晶体管T5的栅极与所述扫描线Scan(n)连接，所述第五晶体管T5的源极S5与数据线Vdata连接，所述第五晶体管T5的漏极D5与所述第八晶体管T8的源极S8连接；\n\n[0098]第六晶体管T6，所述第六晶体管T6的栅极与所述发光信号线EM(n)连接，所述第六晶体管T6的源极S6接入电源电压端VDD，所述第六晶体管T6的漏极D6与所述第五晶体管T5的漏极D5连接；\n\n[0099]第七晶体管T7，所述第七晶体管T7的栅极与所述发光信号线EM(n)连接，所述第七晶体管T7的源极S7与所述第一晶体管T1的源极S1连接，所述第七晶体管T7的漏极D7与所述发光器件LED的阳极连接；\n\n[0100]第八晶体管T8，所述第八晶体管T8的栅极与第一晶体管T1的漏极D1连接，所述第八晶体管T8的源极S8与所述第五晶体管T5的漏极D5连接，所述第八晶体管T8的漏极D8与所述第七晶体管T7的源极S7连接。\n\n[0101]在本申请实施例中的像素电路中，均采用P型晶体管进行说明，本领域的相关技术人员也可将P型晶体管替换为N型晶体管，相应的将信号的相位进行反相就可获得分析结果。因此，本申请实施例在此不再对采用N型晶体管的像素电路及其驱动方法进行赘述。\n\n[0102]本申请实施例提供的像素电路及其驱动方法，包括发光器件LED、驱动晶体管Td、开关模块101、补偿模块102及初始化模块103；在数据信号写入阶段S1，所述数据信号Vdata写入至所述驱动晶体管Td的栅极及所述补偿模块102，所述补偿模块102维持所述驱动晶体管Td的栅极电压并对所述驱动晶体管Td中的阈值电压Vth的漂移进行补偿；所述初始化模块103对所述发光器件LED进行初始化；在发光阶段S2，所述发光信号线EM(n)载入的发光信号使所述开关模块101、所述初始化模块103工作，所述补偿模块103维持所述驱动晶体管Td导通，驱动所述发光器件LED发光，所述初始化模块103将所述初始化信号VI写入所述补偿模块103，以保证所述发光器件LED发光的稳定性。\n\n[0103]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0104]以上对本申请实施例所提供的像素电路及其驱动方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种像素电路及其驱动方法。\n\n背景技术\n\n[0002]有机发光器件根据驱动场致发光(Electroluminescent，EL)元件的方式，分为电流驱动型和电压驱动型，但有机发光器件的栅极与源极之间的电压随时间会发生漂移，导致流经元件的电流发生变化，致使显示装置易出现显示不均匀的问题。\n\n发明内容\n\n[0003]本申请实施例提供一种像素电路及其驱动方法，可以补偿驱动晶体管的阈值电压，保证发光器件发光的稳定性。\n\n[0004]本申请提供一种像素电路，包括：发光器件、驱动晶体管、开关模块、补偿模块及初始化模块；\n\n[0005]所述发光器件的一极接入第一公共电压端，所述发光器件的另一极经所述开关模块与所述驱动晶体管的第二极连接；\n\n[0006]所述驱动晶体管的第一极经所述开关模块与第二公共电压端和数据信号连接，所述驱动晶体管用于在发光阶段根据数据信号写入阶段写入的数据信号驱动所述发光器件发光；所述驱动晶体管的栅极及第二极连接所述补偿模块，以对所述驱动晶体管的阈值电压进行补偿；\n\n[0007]所述开关模块连接扫描线、发光信号线、所述数据信号及所述第二公共电压端，所述开关模块用于在数据信号写入阶段为所述驱动晶体管的第一极写入数据信号，并通过所述补偿模块对所述驱动晶体管的阈值电压进行补偿；在所述发光阶段通过所述初始化模块为所述补偿模块写入初始化信号，并使所述发光器件发光；\n\n[0008]所述补偿模块连接所述第二公共电压端和所述扫描线，所述补偿模块用于对所述驱动晶体管的阈值电压进行补偿；\n\n[0009]所述初始化模块连接所述扫描线和所述发光信号线，所述初始化模块用于在所述数据信号写入阶段为所述发光器件进行初始化，在所述发光阶段为所述补偿模块写入所述初始化信号。\n\n[0010]在一些实施例中，所述补偿模块包括第一晶体管、第二晶体管、第一存储电容及第二存储电容；\n\n[0011]所述第一晶体管的栅极与所述扫描线连接，所述第一晶体管的第一极与所述驱动晶体管的第二极连接，所述第一晶体管的第二极与所述驱动晶体管的栅极连接；所述第一晶体管用于在所述数据信号写入阶段对所述驱动晶体管的阈值电压进行补偿；\n\n[0012]所述第二晶体管的栅极与所述扫描线连接，所述第二晶体管的第一极与所述第一存储电容的第二极连接，所述第二晶体管的第二极与所述驱动晶体管的栅极连接；所述第二晶体管用于控制所述第一存储电容和所述第二存储电容的存储信号，以维持所述驱动晶体管的栅极电压；\n\n[0013]所述第一存储电容的第一极接入所述第二公共电压端；\n\n[0014]所述第二存储电容的第一极接入所述第二公共电压端，所述第二存储电容的第二极与所述第二晶体管的第二极连接。\n\n[0015]在一些实施例中，所述初始化模块包括第三晶体管和第四晶体管；\n\n[0016]所述第三晶体管的栅极与所述发光信号线连接，所述第三晶体管的第一极与所述第二晶体管的第一极连接，所述第三晶体管的第二极接入所述初始化信号；\n\n[0017]所述第四晶体管的栅极与所述扫描线连接，所述第四晶体管的第一极接入所述初始化信号，所述第四晶体管的第二极与所述发光器件的第一极连接。\n\n[0018]在一些实施例中，所述开关模块包括第五晶体管、第六晶体管、第七晶体管；\n\n[0019]所述第五晶体管的栅极与所述扫描线连接，所述第五晶体管的第一极接入所述数据信号，所述第五晶体管的第二极与所述驱动晶体管的第一极连接；\n\n[0020]所述第六晶体管的栅极与所述发光信号线连接，所述第六晶体管的第一极与所述第二公共电压端连接，所述第六晶体管的第二极与所述驱动晶体管的第一极连接；\n\n[0021]所述第七晶体管的栅极与所述发光信号线连接，所述第七晶体管的第一极与所述驱动晶体管的第二极连接，所述第七晶体管的第二极与所述发光器件的第一极连接。\n\n[0022]在一些实施例中，所述第一公共电压端为直流低电源，所述第二公共电压端为直流高电源。\n\n[0023]在一些实施例中，所述初始化信号为直流低电源。\n\n[0024]在一些实施例中，所述发光器件为发光二极管。\n\n[0025]在一些实施例中，所述发光器件包括次毫米发光二极管、微型发光二极管和有机发光二极管。\n\n[0026]本申请还提供一种像素驱动方法，用于驱动所述的像素电路，所述像素驱动方法包括：\n\n[0027]在数据信号写入阶段，所述扫描线载入的扫描信号使所述开关模块、所述补偿模块、所述初始化模块工作，以将所述数据信号写入至所述驱动晶体管的栅极及所述补偿模块，所述补偿模块维持所述驱动晶体管的栅极电压并对所述驱动晶体管中的阈值电压的漂移进行补偿；所述初始化模块对所述发光器件进行初始化；\n\n[0028]在发光阶段，所述发光信号线载入的发光信号使所述开关模块、所述初始化模块工作，所述补偿模块维持所述驱动晶体管导通，驱动所述发光器件发光，所述初始化模块将所述初始化信号写入所述补偿模块。\n\n[0029]本申请还提供一种像素电路，包括：\n\n[0030]发光器件，所述发光器件的阴极接入公共接地电压端；\n\n[0031]第一存储电容，所述第一存储电容的上极板接入电源电压端；\n\n[0032]第二存储电容，所述第二存储电容的上极板接入电源电压端；\n\n[0033]第一晶体管，所述第一晶体管的栅极与扫描线连接，所述第一晶体管的源极与第八晶体管的漏极连接，所述第一晶体管的漏极与所述第二存储电容的下极板连接；\n\n[0034]第二晶体管，所述第二晶体管的栅极与所述扫描线连接，所述第二晶体管的源极与所述第一存储电容的下极板连接，所述第二晶体管的漏极与所述第二存储电容的下极板连接；\n\n[0035]第三晶体管，所述第三晶体管的栅极与发光信号线连接，所述第三晶体管的源极与所述第二晶体管的源极连接，所述第三晶体管的漏极接入初始化电压端；\n\n[0036]第四晶体管，所述第四晶体管的栅极与所述扫描线连接，所述第四晶体管的源极接入所述初始化电压端，所述第四晶体管的漏极与所述发光器件的阳极连接；\n\n[0037]第五晶体管，所述第五晶体管的栅极与所述扫描线连接，所述第五晶体管的源极与数据线连接，所述第五晶体管的漏极与所述第八晶体管的源极连接；\n\n[0038]第六晶体管，所述第六晶体管的栅极与所述发光信号线连接，所述第六晶体管的源极接入电源电压端，所述第六晶体管的漏极与所述第五晶体管的漏极连接；\n\n[0039]第七晶体管，所述第七晶体管的栅极与所述发光信号线连接，所述第七晶体管的源极与所述第一晶体管的源极连接，所述第七晶体管的漏极与所述发光器件的阳极连接；\n\n[0040]第八晶体管，所述第八晶体管的栅极与第一晶体管的漏极连接，所述第八晶体管的源极与所述第五晶体管的漏极连接，所述第八晶体管的漏极与所述第七晶体管的源极连接。\n\n[0041]本申请实施例提供的像素电路及其驱动方法，包括发光器件、驱动晶体管、开关模块、补偿模块及初始化模块；在数据信号写入阶段，所述数据信号写入至所述驱动晶体管的栅极及所述补偿模块，所述补偿模块维持所述驱动晶体管的栅极电压并对所述驱动晶体管中的阈值电压的漂移进行补偿；所述初始化模块对所述发光器件进行初始化；在发光阶段，所述发光信号线载入的发光信号使所述开关模块、所述初始化模块工作，所述补偿模块维持所述驱动晶体管导通，驱动所述发光器件发光，所述初始化模块将所述初始化信号写入所述补偿模块，以保证所述发光器件发光的稳定性。\n\n附图说明\n\n[0042]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0043]图1为本申请的实施例提供的像素电路的原理图；\n\n[0044]图2A为本申请的实施例提供的像素电路的结构示意图；\n\n[0045]图2B为图2A提供的像素电路的工作时序图；\n\n[0046]图3为本申请的实施例提供的像素电路的结构示意图。\n\n具体实施方式\n\n[0047]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0048]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0049]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0050]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0051]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0052]具体的，请参阅图1，其为本申请实施例提供的像素电路的原理图；所述像素电路包括：发光器件LED、驱动晶体管Td、开关模块101、补偿模块102及初始化模块103；\n\n[0053]所述发光器件LED的一极接入第一公共电压端VSS，所述发光器件LED的另一极经所述开关模块101与所述驱动晶体管Td的第二极连接；\n\n[0054]所述驱动晶体管Td的第一极经所述开关模块101与第二公共电压端VDD和数据信号Vdata连接，所述驱动晶体管Td用于在发光阶段S2根据数据信号写入阶段S1写入的数据信号Vdata驱动所述发光器件LED发光；所述驱动晶体管Td的栅极及第二极连接所述补偿模块102，以对所述驱动晶体管Td的阈值电压Vth进行补偿；\n\n[0055]所述开关模块101连接扫描线Scan(n)、发光信号线EM(n)、所述数据信号Vdata及所述第二公共电压端VDD，所述开关模块101用于在数据信号写入阶段S1为所述驱动晶体管Td的第一极写入数据信号Vdata，并通过所述补偿模块102对所述驱动晶体管Td的阈值电压Vth进行补偿；在所述发光阶段S2通过所述初始化模块103为所述补偿模块102写入初始化信号VI，并使所述发光器件LED发光；\n\n[0056]所述补偿模块102连接所述第二公共电压端VDD和所述扫描线Scan(n)，所述补偿模块102用于对所述驱动晶体管Td的阈值电压Vth进行补偿；\n\n[0057]所述初始化模块103连接所述扫描线Scan(n)和所述发光信号线EM(n)，所述初始化模块103用于在所述数据信号写入阶段S1为所述发光器件LED进行初始化，在所述发光阶段S2为所述补偿模块102写入所述初始化信号VI。\n\n[0058]本申请的实施例提供的像素电路，在所述数据信号写入阶段S1通过所述开关模块101及所述补偿模块102维持所述驱动晶体管Td的栅极电压，并对所述驱动晶体管Td的阈值电压Vth进行补偿；在所述的发光阶段S2通过所述开关模块101和所述初始化模块103为所述补偿模块102写入所述初始化信号VI，通过所述补偿模块102维持所述驱动晶体管Td导通，驱动所述发光器件LED发光，以保证所述发光器件的发光的稳定性。\n\n[0059]此外由于所述像素电路中只涉及所述扫描线Scan(n)和所述发光信号线EM(n)，因此可以降低排线密度，减少因膜层残留造成的点线类不良，提高响应速度和刷新率，还可降低生产成本。\n\n[0060]所述第一公共电压端VSS为直流低电源，所述第二公共电压端VDD为直流高电源。具体地，所述第一公共电压端VSS为-1V～-5V；进一步地，所述第一公共电压端VSS为-2.55V。\n\n[0061]所述初始化信号VI为直流低电源；具体地，所述初始化信号VI为-3V～-5V。\n\n[0062]所述发光器件LED为发光二极管，具体地，所述发光器件LED包括次毫米发光二极管(Mini-LED)、微型发光二极管(Micro-LED)和有机发光二极管(OLED)。\n\n[0063]在本申请实施例中，多个所述发光器件LED采用共阴极接法，具体地，参照图1，所述发光器件LED与所述第一公共电压端VSS连接的一极为阴极，所述发光器件LED经所述开关模块101与所述驱动晶体管Td的第二极连接的一极为阳极。此外，多个所述发光器件LED还可采用共阳极接法，多个所述发光器件LED采用共阴极接法时与采用共阳极接法时相似，本申请实施例中不再予以赘述。\n\n[0064]本申请实施例中所采用的晶体管包括薄膜晶体管、场效应晶体管；为区分晶体管中除栅极以外的源极与漏极，本申请的第一极可以为漏极或源极的一者，相应地，第二极为源极或漏极中的另一者。\n\n[0065]本申请还提供一种像素驱动方法，用于驱动所述的像素电路，所述像素驱动方法包括：\n\n[0066]在数据信号写入阶段S1，所述扫描线Scan(n)载入的扫描信号使所述开关模块101、所述补偿模块102、所述初始化模块103工作，以将所述数据信号Vdata写入至所述驱动晶体管Td的栅极及所述补偿模块102，所述补偿模块102维持所述驱动晶体管Td的栅极电压并对所述驱动晶体管Td中的阈值电压Vth的漂移进行补偿；所述初始化模块103对所述发光器件LED进行初始化；\n\n[0067]在发光阶段S2，所述发光信号线EM(n)载入的发光信号使所述开关模块101、所述初始化模块103工作，所述补偿模块101维持所述驱动晶体管Td导通，驱动所述发光器件LED发光，所述初始化模块103将所述初始化信号VI写入所述补偿模块102。\n\n[0068]请参阅图2A，其为本申请的实施例提供的像素电路的结构示意图，所述补偿模块102包括第一晶体管T1、第二晶体管T2、第一存储电容C1及第二存储电容C2；\n\n[0069]所述第一晶体管T1的栅极与所述扫描线Scan(n)连接，所述第一晶体管T1的第一极与所述驱动晶体管Td的第二极连接，所述第一晶体管T1的第二极与所述驱动晶体管Td的栅极连接；所述第一晶体管T1用于在所述数据信号写入阶段S1对所述驱动晶体管Td的阈值电压Vth进行补偿；\n\n[0070]所述第二晶体管T2的栅极与所述扫描线Scan(n)连接，所述第二晶体管T2的第一极与所述第一存储电容C1的第二极连接，所述第二晶体管T2的第二极与所述驱动晶体管Td的栅极连接；所述第二晶体管T2用于控制所述第一存储电容C1和所述第二存储电容C2的存储信号，以维持所述驱动晶体管Td的栅极电压；\n\n[0071]所述第一存储电容C1的第一极接入所述第二公共电压端VDD；\n\n[0072]所述第二存储电容C2的第一极接入所述第二公共电压端VDD，所述第二存储电容C2的第二极与所述第二晶体管T2的第二极连接。\n\n[0073]请继续参阅图2A，所述初始化模块102包括第三晶体管T3和第四晶体管T4；\n\n[0074]所述第三晶体管T3的栅极与所述发光信号线EM(n)连接，所述第三晶体管T3的第一极与所述第二晶体管T2的第一极连接，所述第三晶体管T3的第二极接入所述初始化信号VI；\n\n[0075]所述第四晶体管T4的栅极与所述扫描线Scan(n)连接，所述第四晶体管T4的第一极接入所述初始化信号VI，所述第四晶体管T4的第二极与所述发光器件LED的第一极连接。\n\n[0076]请继续参阅图2A，所述开关模块101包括第五晶体管T5、第六晶体管T6、第七晶体管T7；\n\n[0077]所述第五晶体管T5的栅极与所述扫描线Scan(n)连接，所述第五晶体管T5的第一极接入所述数据信号Vdata，所述第五晶体管T5的第二极与所述驱动晶体管Td的第一极连接；\n\n[0078]所述第六晶体管T6的栅极与所述发光信号线EM(n)连接，所述第六晶体管T6的第一极与所述第二公共电压端VDD连接，所述第六晶体管T6的第二极与所述驱动晶体管Td的第一极连接；\n\n[0079]所述第七晶体管T7的栅极与所述发光信号线EM(n)连接，所述第七晶体管T7的第一极与所述驱动晶体管Td的第二极连接，所述第七晶体管T7的第二极与所述发光器件LED的第一极连接。\n\n[0080]请参阅图2B，其为图2A提供的像素电路的工作时序图；其中，Vgate表示栅极电压。在每一刷新周期(1frame)内，包括两个阶段，分别为数据信号写入阶段S1和发光阶段S2。\n\n[0081]在所述数据信号写入阶段S1：所述扫描线Scan(n)载入的扫描信号为低电平时，所述开关模块101中的所述第五晶体管T5导通，所述补偿模块102中的所述第一晶体管T1、所述第二晶体管T2导通，所述初始化模块103中的所述第四晶体管T4导通；所述数据信号Vdata写入所述驱动晶体管Td的第一极，并对所述补偿模块102中的所述第一存储电容C1和所述第二存储电容C2进行充电，当所述驱动晶体管Td的栅极电位Vg与第一极Vs的电位差值Vgs小于所述驱动晶体管Td的阈值电压Vth时，所述驱动晶体管Td导通，所述补偿模块102维持所述驱动晶体管Td的栅极电压，以对所述驱动晶体管Td的阈值电压Vth进行补偿。\n\n[0082]具体地，由于所述第一存储电容C1的第二极在前一阶段(即发光阶段S2)写入所述初始化信号VI，在所述第二晶体管T2导通时，所述第一存储电容C1释放在前一阶段(即发光阶段S2)存储的所述初始化信号VI，所述第二晶体管T2通过所述第一存储电容C1释放的所述初始化信号VI进行充电，所述驱动晶体管Td的栅极电位Vg不断降低，直至所述驱动晶体管Td的栅极电位Vg与第一极电位Vs之差Vgs小于所述驱动晶体管Td的阈值电压Vth时，所述驱动晶体管Td导通，即Vgs＝Vg-Vs[0083]在理想情况下，可使所述驱动晶体管Td的栅极电位Vg与第一极电位Vs之差Vgs等于所述驱动晶体管Td的阈值电压Vth时，所述驱动晶体管Td导通，即Vgs＝Vg-Vs＝Vth，所述驱动晶体管Td导通。由所述第五晶体管T5导通，所述驱动晶体管Td的第一极写入所述数据信号Vdata和Vg-Vs＝Vth可得：Vg-Vdata＝Vth。\n\n[0084]所述第四晶体管T4导通，可对所述发光器件LED进行复位，以避免所述发光器件的第一极在所述数据信号写入阶段S1还残留有前一阶段(即发光阶段S2)写入的信号，导致所述发光器件LED在所述数据信号写入阶段S1发出微弱的光，影响对比度。\n\n[0085]其中，所述发光信号线EM(n)载入的所述发光信号在所述数据信号写入阶段S1为高电平，所述开关模块101中的所述第六晶体管T6、所述第七晶体管T7截止，所述初始化模块103中的所述第三晶体管T3截止。\n\n[0086]在所述发光阶段S2：所述发光信号线EM(n)载入的发光信号为低电平时，所述开关模块101中的所述第六晶体管T6、所述第七晶体管T7导通，所述初始化模块103中的所述第三晶体管T3导通；所述补偿模块102的所述第二晶体管T2的所述第一极写入所述初始化信号VI，所述第一存储电容C1存储所述初始化信号VI；所述第二存储电容C2通过所述第六晶体管T6维持所述驱动晶体管Td导通，所述第七晶体管T7导通使得所述驱动晶体管Td产生驱动电流I以驱动所述发光器件LED发光。\n\n[0087]其中，所述扫描信号线Scan(n)载入的所述扫描信号在所述发光阶段S2为高电平，所述开关模块101中的所述第五晶体管T5截止，所述补偿模块102中的所述第一晶体管T1、所述第二晶体管T2截止，所述初始化模块103中的所述第四晶体管T4截止。\n\n[0088]由所述第六晶体管T6导通，所述驱动晶体管Td的第一极写入所述第一公共电压信号VDD，可得所述驱动晶体管Td的栅极电位Vg与第一极电位Vs之差Vgs等于Vg-VDD；因此，由Vg-Vdata＝Vth、Vgs＝Vg-VDD和所述驱动电流I＝(CoxμmW/L)*(Vgs-Vth)2/2(其中，Cox、μm、W、L分别为晶体管的单位面积沟道电容、沟道迁移率、沟道宽和沟道长)可得所述驱动电流I＝(CoxμmW/L)*(Vg-VDD-Vg+Vdata)2/2＝(CoxμmW/L)*(Vdata-VDD)2/2；以此所述驱动电流I不受所述阈值电压Vth的变化的影响，所述发光器件LED可以保证发光的稳定性。\n\n[0089]请参阅图3，其为本申请的实施例提供的像素电路的结构示意图；本申请还提供一种像素电路，包括：\n\n[0090]发光器件LED，所述发光器件LED的阴极接入公共接地电压端VSS；\n\n[0091]第一存储电容C1，所述第一存储电容C1的上极板接入电源电压端VDD；\n\n[0092]第二存储电容C2，所述第二存储电容C2的上极板接入电源电压端VDD；\n\n[0093]第一晶体管T1，所述第一晶体管T1的栅极与扫描线Scan(n)连接，所述第一晶体管T1的源极S1与第八晶体管T8的漏极D8连接，所述第一晶体管T1的漏极D1与所述第二存储电容C2的下极板连接；\n\n[0094]第二晶体管T2，所述第二晶体管T2的栅极与所述扫描线Scan(n)连接，所述第二晶体管T2的源极S2与所述第一存储电容C1的下极板连接，所述第二晶体管T2的漏极D2与所述第二存储电容C2的下极板连接；\n\n[0095]第三晶体管T3，所述第三晶体管T3的栅极与发光信号线EM(n)连接，所述第三晶体管T3的源极S3与所述第二晶体管T2的源极S2连接，所述第三晶体管T3的漏极D3接入初始化电压端VI；\n\n[0096]第四晶体管T4，所述第四晶体管T4的栅极与所述扫描线Scan(n)连接，所述第四晶体管T4的源极S4接入所述初始化电压端VI，所述第四晶体管T4的漏极D4与所述发光器件LED的阳极连接；\n\n[0097]第五晶体管T5，所述第五晶体管T5的栅极与所述扫描线Scan(n)连接，所述第五晶体管T5的源极S5与数据线Vdata连接，所述第五晶体管T5的漏极D5与所述第八晶体管T8的源极S8连接；\n\n[0098]第六晶体管T6，所述第六晶体管T6的栅极与所述发光信号线EM(n)连接，所述第六晶体管T6的源极S6接入电源电压端VDD，所述第六晶体管T6的漏极D6与所述第五晶体管T5的漏极D5连接；\n\n[0099]第七晶体管T7，所述第七晶体管T7的栅极与所述发光信号线EM(n)连接，所述第七晶体管T7的源极S7与所述第一晶体管T1的源极S1连接，所述第七晶体管T7的漏极D7与所述发光器件LED的阳极连接；\n\n[0100]第八晶体管T8，所述第八晶体管T8的栅极与第一晶体管T1的漏极D1连接，所述第八晶体管T8的源极S8与所述第五晶体管T5的漏极D5连接，所述第八晶体管T8的漏极D8与所述第七晶体管T7的源极S7连接。\n\n[0101]在本申请实施例中的像素电路中，均采用P型晶体管进行说明，本领域的相关技术人员也可将P型晶体管替换为N型晶体管，相应的将信号的相位进行反相就可获得分析结果。因此，本申请实施例在此不再对采用N型晶体管的像素电路及其驱动方法进行赘述。\n\n[0102]本申请实施例提供的像素电路及其驱动方法，包括发光器件LED、驱动晶体管Td、开关模块101、补偿模块102及初始化模块103；在数据信号写入阶段S1，所述数据信号Vdata写入至所述驱动晶体管Td的栅极及所述补偿模块102，所述补偿模块102维持所述驱动晶体管Td的栅极电压并对所述驱动晶体管Td中的阈值电压Vth的漂移进行补偿；所述初始化模块103对所述发光器件LED进行初始化；在发光阶段S2，所述发光信号线EM(n)载入的发光信号使所述开关模块101、所述初始化模块103工作，所述补偿模块103维持所述驱动晶体管Td导通，驱动所述发光器件LED发光，所述初始化模块103将所述初始化信号VI写入所述补偿模块103，以保证所述发光器件LED发光的稳定性。\n\n[0103]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0104]以上对本申请实施例所提供的像素电路及其驱动方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10793, 23847, '技术领域\n\n[0001]本申请涉及显示领域，特别是涉及一种micro LED显示面板的制作方法。\n\n背景技术\n\n[0002]MicroLED显示装置相比OLED显示装置具有可靠性高，色域高，亮度高，透明度高，PPI(Pixels Per Inch，像素密度)高；且封装要求低，更容易实现柔性及无缝拼接显示，是未来极具有发展潜力的未来显示装置。\n\n[0003]通过制作柔性显示面板可以实现柔性拼接显示，从而实现microLED的大尺寸显示。在这种方法中，由于fanout区(即非显示区)玻璃的线路与AA(Active Area，显示区)区玻璃的线路通过侧面印刷线路的方式进行连接。由于fanout区玻璃与AA区玻璃贴合后，需要进行背面线路的保护，需要对线路印刷边进行玻璃磨边，制程非常复杂，而且侧面印刷的线路在LED转移、绑定及拼接组装的过程中容易出现侧面印刷线路的刮蹭、碰撞或挤压，导致线路的损坏，显示面板的良率降低。\n\n[0004]此外，采用双玻璃侧面线路的方案与采用单玻璃背板线路的方案，制程都比较复杂，增加了制作的难度，且成本高昂。\n\n[0005]因此，现有的micro LED显示装置的技术中，还存在着micro LED显示面板的fanout区玻璃与AA区玻璃贴合后，需要进行背面线路的保护，需要对线路印刷边进行玻璃磨边，制程非常复杂，而且侧面印刷的线路在LED转移、绑定及拼接组装的过程中容易出现侧面印刷线路的刮蹭、碰撞或挤压，导致线路的损坏，显示面板的良率降低且双玻璃侧面线路与单玻璃背板线路制程复杂、成本高昂的问题，急需改进。\n\n发明内容\n\n[0006]本申请涉及一种micro LED显示面板及其制作方法，用于解决现有技术中存在着micro LED显示面板的fanout区玻璃与AA区玻璃贴合后，需要进行背面线路的保护，需要对线路印刷边进行玻璃磨边，制程非常复杂，而且侧面印刷的线路在LED转移、绑定及拼接组装的过程中容易出现侧面印刷线路的刮蹭、碰撞或挤压，导致线路的损坏，显示面板的良率降低且双玻璃侧面线路与单玻璃背板线路制程复杂、成本高昂的问题。\n\n[0007]为解决上述问题，本申请提供的技术方案如下：\n\n[0008]本申请提供的一种micro LED显示面板，包括：驱动单元和显示单元；\n\n[0009]所述驱动单元与所述显示单元均包括六个端面；\n\n[0010]所述驱动单元通过固定连接设置在背离所述显示面板出光一侧，所述驱动单元的第四端面与所述显示单元的第四端面位于同一平面内；\n\n[0011]所述显示单元包括：量子点层和色阻层，所述量子点层正对于所述色阻层进行设置，所述色阻层对所述量子点层发出的光线颜色进行转换。\n\n[0012]根据本申请提供的一实施例，所述固定连接采用金属焊接或是异方性导电胶连接。\n\n[0013]根据本申请提供的一实施例，所述金属焊接的材料为：金、锌、锡、铟、锡铅其中的一种或是多种的组合。\n\n[0014]根据本申请提供的一实施例，所述色阻层包括：红色色阻层、绿色色阻层和透明色阻层。\n\n[0015]根据本申请提供的一实施例，所述量子点层为蓝色量子点层。\n\n[0016]根据本申请提供的一实施例，所述micro LED显示面板为底发光型显示面板，即所述量子点层的四个侧边以及背离所述薄膜晶体管层的一侧均设置有反光层。\n\n[0017]根据本申请提供的一实施例，所述反光层为白色的环氧胶、混合了固化剂及微型氧化钛颗粒的硅胶材料。\n\n[0018]本申请还提供一种micro LED显示面板的制作方法，该方法包括以下步骤：\n\n[0019]S10，在衬底基板上依次沉积聚酰亚胺层、薄膜晶体管层、量子点层以及薄膜封装层；\n\n[0020]S20，在所述薄膜晶体管层背离所述衬底基板一侧，与所述薄膜封装层相同的膜层内设置一层铜垫，并在所述铜垫上方设置一层金属焊材；\n\n[0021]S30，沿所述铜垫和所述金属焊材背离所述薄膜封装层的一侧切割所述衬底基板，去掉第一衬底基板，保留第一聚酰亚胺层、所述第一薄膜晶体管层、第二衬底基板、第二聚酰亚胺层以及第二薄膜晶体管层；\n\n[0022]S40，翻折所述第二衬底基板、所述第二聚酰亚胺层以及所述第二薄膜晶体管层至所述薄膜封装层背离所述量子点层的一侧，使得所述第二薄膜晶体管层正对于所述薄膜封装层；\n\n[0023]S50，在所述第二薄膜晶体管层与所述薄膜封装层之间设置驱动芯片和金属走线绑定区，所述金属绑定区的一端电性连接所述铜垫，所述金属绑定区的另一端电性连接印刷电路板；\n\n[0024]S60，在第一聚酰亚胺层背离所述量子点层的一侧沉积色阻层、黑色堤以及第三衬底基板。\n\n[0025]根据本申请提供的一实施例，步骤“S10”中，所述量子点层的沉积包括：\n\n[0026]S101，采用紫外胶在所述薄膜晶体管基板的一侧黏贴所述量子点层；\n\n[0027]S102，再在所述量子点层的四周以及背离所述薄膜晶体管层的一侧涂布一层白色反光材料；\n\n[0028]S103，对所述量子点层进行切割，分割成多个量子点层小单元。\n\n[0029]根据本申请提供的一实施例，所述金属焊接为激光加热焊接或是加热头加热焊。\n\n[0030]与现有技术相比，本申请提供的一种micro LED显示面板及其制作方法具有的有益效果为：\n\n[0031]1.首先，本申请所提供的micro LED显示面板，所述驱动单元设置在所述显示单元的背面，相对于现有的显示面板显示区与非显示区设置于同一平面内，缩小了显示面板的边框，可以真正实现无边框显示；\n\n[0032]2.其次，本申请所提供的micro LED显示面板，设置有量子点层和色阻层，当所述量子点层发出的光经过所述色阻层时，会根据所述色阻层的颜色而发生变化，实现多种颜色的转换；\n\n[0033]3.最后，本申请所提供的micro LED显示面板为底发光型micro LED显示面板，即所述量子点层的四个侧边以及背离所述薄膜晶体管层的一侧均设置有反光层。\n\n附图说明\n\n[0034]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0035]图1为现有的micro LED显示面板的结构示意图。\n\n[0036]图2为本申请实施例提供的micro LED显示面板的结构示意图。\n\n[0037]图3为本申请实施例提供的micro LED显示面板A-A剖面的结构示意图。\n\n[0038]图4为本申请实施例提供的micro LED显示面板制作方法的流程示意图。\n\n具体实施方式\n\n[0039]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0040]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0041]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0042]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0043]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0044]本申请提供一种micro LED显示面板及其制作方法，具体参阅图1-图4。\n\n[0045]参阅图1，为现有的micro LED显示面板的结构示意图。包括：显示区11、驱动单元12以及连接所述显示区11与所述驱动单元12的第一覆晶薄膜13、第二覆晶薄膜14。fanout区玻璃(即驱动单元12)与AA区11玻璃贴合后，需要进行背面线路的保护，需要对线路印刷边进行玻璃磨边，制程非常复杂，而且侧面印刷的线路在LED转移、绑定及拼接组装的过程中容易出现侧面印刷线路的刮蹭、碰撞或挤压，导致线路的损坏，显示面板的良率降低且双玻璃侧面线路与单玻璃背板线路制程复杂、成本高昂。因此，本申请特提出一种micro LED显示面板及其制作方法。\n\n[0046]参阅图2，本申请提供的一种micro LED显示面板的结构示意图，包括：驱动单元22和显示单元21；所述驱动单元22与所述显示单元21均包括六个端面；所述驱动单元22通过固定连接设置在背离所述显示面板出光一侧，所述驱动单元22的第四端面与所述显示单元21的第四端面位于同一平面内，使得原来与所述显示单元21位于同一平面内的所述驱动单元22收窄至所述显示单元21的背面，可真正实现窄边框显示；所述显示单元21包括：量子点层215和色阻层212，所述量子点层215正对于所述色阻层212进行设置，所述色阻层212对所述量子点层215发出的光线颜色进行转换。\n\n[0047]进一步地，所述固定连接采用金属焊接或是异方性导电胶连接。所述金属焊接的材料为：金、锌、锡、铟、锡铅其中的一种或是多种的组合，均具有较低的熔点。\n\n[0048]在本申请的一些实施例中，所述量子点层为蓝色量子点层。\n\n[0049]进一步地，参阅图3，为本申请实施例提供的micro LED显示面板A-A剖面的结构示意图。所述色阻层212包括：红色色阻层2121、绿色色阻层2122、透明色阻层2123以及黑色堤，所述黑色堤设置在相邻的两个色阻层之间，其作用类似于黑色矩阵，防止各色阻层之间漏光。由于所述量子点层215为蓝色发光层，因此，当所述蓝色发光层发出的蓝光经过所述红色色阻层2121时，所述红色量子点层2121受到激发而发出红光，形成红色像素；当所述蓝光发光层发出的蓝光经过所述绿色量子点层2122时，所述绿色量子点层2122受到激发而发出绿光，形成绿色像素；当所述蓝光发光层发出的蓝光经过所述透明色阻层2123时，所述透明色阻层2123可直接透过所述蓝光发光层发出的蓝光，形成蓝色像素，从而形成红、绿、蓝三基色合成的彩色图像。\n\n[0050]进一步地，为了有效地利用光能，以及防止所述MicroLED量子点层215发光阵列中的像素间颜色的相互干扰，可有效地提升暗态下的亮度，从而提升所述MicroLED显示面板的对比度。所述micro LED显示面板为底发光型显示面板，即所述量子点层215的四个侧边以及背离所述薄膜晶体管层214的一侧均设置有反光层。所述反光层为白色的环氧胶、混合了固化剂及微型氧化钛颗粒的硅胶材料，也可以为银或铝等金属，优选白色的环氧胶、混合了固化剂及微型氧化钛颗粒的硅胶材料。光线经过所述反光层进行反射，从而再一次被所述量子点层215吸收，防止光线进入相邻的所述量子点单元内。同时，还可在所述反光层上沉积一层惰性保护层，所述惰性保护层可为聚氨酯、环氧树脂、派瑞林等单层或多层复合膜，以阻隔外界的水氧，用来保护所述反光层，防止所述反光层被氧化。\n\n[0051]进一步地，所述第二衬底基板211和所述第三衬底基板221可为玻璃基板。所述第三衬底基板211设置在所述色阻层212的下方，所述第一聚酰亚胺层213、所述第一薄膜晶体管层214、所述量子点层215以及所述薄膜封装层216依次层叠设置在所述色阻层的上方；所述薄膜封装层216覆盖在所述量子点层215上面可阻挡水、氧进入所述量子点层215，可提升所述量子点层215可靠性，进而保证所述MicroLED显示面板的可靠性。\n\n[0052]进一步地，所述第一薄膜晶体管层214上方，所述薄膜封装层216的侧边，还设置有第一铜垫226和金属焊材或是异方性导电胶225，将所述显示单元21与所述驱动单元22进行电性连接。\n\n[0053]进一步地，所述驱动单元22由上至下还包括：第二衬底基板221、所述第二聚酰亚胺层222、所述第二薄膜晶体管层223以及所述第二铜垫224，同时，所述第二铜垫224电性连接所述金属绑定区228的一端，所述金属绑定区228的另一端电性连接所述印刷电路板23、24，所述金属绑定区227内还设置有驱动芯片227。\n\n[0054]参阅图4，本申请还提供一种micro LED显示面板的制作方法，该方法包括以下步骤：S10，在衬底基板上依次沉积聚酰亚胺层、薄膜晶体管层、量子点层以及薄膜封装层；S20，在所述薄膜晶体管层背离所述衬底基板一侧，与所述薄膜封装层相同的膜层内设置一层铜垫，并在所述铜垫上方设置一层金属焊材；S30，沿所述铜垫和所述金属焊材背离所述薄膜封装层的一侧切割所述衬底基板，去掉第一衬底基板，保留第一聚酰亚胺层、所述第一薄膜晶体管层、第二衬底基板、第二聚酰亚胺层以及第二薄膜晶体管层；S40，翻折所述第二衬底基板、所述第二聚酰亚胺层以及所述第二薄膜晶体管层至所述薄膜封装层背离所述量子点层的一侧，使得所述第二薄膜晶体管层正对于所述薄膜封装层；S50，在所述第二薄膜晶体管层与所述薄膜封装层之间设置驱动芯片和金属走线绑定区，所述金属绑定区的一端电性连接所述铜垫，所述金属绑定区的另一端电性连接印刷电路板；S60，在第一聚酰亚胺层背离所述量子点层的一侧沉积色阻层、黑色堤以及第三衬底基板。\n\n[0055]根据本申请提供的一实施例，步骤“S10”中，所述量子点层的沉积包括：S101，采用紫外胶在所述薄膜晶体管基板的一侧黏贴所述量子点层；S102，再在所述量子点层的四周以及背离所述薄膜晶体管层的一侧涂布一层白色反光材料；S103，对所述量子点层进行切割，分割成多个量子点层小单元。\n\n[0056]根据本申请提供的一实施例，所述金属焊接为激光加热焊接或是加热头加热焊。\n\n[0057]因此，本申请提供的一种micro LED显示面板及其制作方法的有益效果为：首先，本申请所提供的micro LED显示面板，所述驱动单元设置在所述显示单元的背面，相对于现有的显示面板显示区与非显示区设置于同一平面内，缩小了显示面板的边框，可以真正实现无边框显示；其次，本申请所提供的micro LED显示面板，设置有量子点层和色阻层，当所述量子点层发出的光经过所述色阻层时，会根据所述色阻层的颜色而发生变化，实现多种颜色的转换；最后，本申请所提供的micro LED显示面板为底发光型micro LED显示面板，即所述量子点层的四个侧边以及背离所述薄膜晶体管层的一侧均设置有反光层。\n\n[0058]以上对本申请实施例所提供的一种micro LED显示面板及其制作方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示领域，特别是涉及一种micro LED显示面板的制作方法。\n\n背景技术\n\n[0002]MicroLED显示装置相比OLED显示装置具有可靠性高，色域高，亮度高，透明度高，PPI(Pixels Per Inch，像素密度)高；且封装要求低，更容易实现柔性及无缝拼接显示，是未来极具有发展潜力的未来显示装置。\n\n[0003]通过制作柔性显示面板可以实现柔性拼接显示，从而实现microLED的大尺寸显示。在这种方法中，由于fanout区(即非显示区)玻璃的线路与AA(Active Area，显示区)区玻璃的线路通过侧面印刷线路的方式进行连接。由于fanout区玻璃与AA区玻璃贴合后，需要进行背面线路的保护，需要对线路印刷边进行玻璃磨边，制程非常复杂，而且侧面印刷的线路在LED转移、绑定及拼接组装的过程中容易出现侧面印刷线路的刮蹭、碰撞或挤压，导致线路的损坏，显示面板的良率降低。\n\n[0004]此外，采用双玻璃侧面线路的方案与采用单玻璃背板线路的方案，制程都比较复杂，增加了制作的难度，且成本高昂。\n\n[0005]因此，现有的micro LED显示装置的技术中，还存在着micro LED显示面板的fanout区玻璃与AA区玻璃贴合后，需要进行背面线路的保护，需要对线路印刷边进行玻璃磨边，制程非常复杂，而且侧面印刷的线路在LED转移、绑定及拼接组装的过程中容易出现侧面印刷线路的刮蹭、碰撞或挤压，导致线路的损坏，显示面板的良率降低且双玻璃侧面线路与单玻璃背板线路制程复杂、成本高昂的问题，急需改进。\n\n发明内容\n\n[0006]本申请涉及一种micro LED显示面板及其制作方法，用于解决现有技术中存在着micro LED显示面板的fanout区玻璃与AA区玻璃贴合后，需要进行背面线路的保护，需要对线路印刷边进行玻璃磨边，制程非常复杂，而且侧面印刷的线路在LED转移、绑定及拼接组装的过程中容易出现侧面印刷线路的刮蹭、碰撞或挤压，导致线路的损坏，显示面板的良率降低且双玻璃侧面线路与单玻璃背板线路制程复杂、成本高昂的问题。\n\n[0007]为解决上述问题，本申请提供的技术方案如下：\n\n[0008]本申请提供的一种micro LED显示面板，包括：驱动单元和显示单元；\n\n[0009]所述驱动单元与所述显示单元均包括六个端面；\n\n[0010]所述驱动单元通过固定连接设置在背离所述显示面板出光一侧，所述驱动单元的第四端面与所述显示单元的第四端面位于同一平面内；\n\n[0011]所述显示单元包括：量子点层和色阻层，所述量子点层正对于所述色阻层进行设置，所述色阻层对所述量子点层发出的光线颜色进行转换。\n\n[0012]根据本申请提供的一实施例，所述固定连接采用金属焊接或是异方性导电胶连接。\n\n[0013]根据本申请提供的一实施例，所述金属焊接的材料为：金、锌、锡、铟、锡铅其中的一种或是多种的组合。\n\n[0014]根据本申请提供的一实施例，所述色阻层包括：红色色阻层、绿色色阻层和透明色阻层。\n\n[0015]根据本申请提供的一实施例，所述量子点层为蓝色量子点层。\n\n[0016]根据本申请提供的一实施例，所述micro LED显示面板为底发光型显示面板，即所述量子点层的四个侧边以及背离所述薄膜晶体管层的一侧均设置有反光层。\n\n[0017]根据本申请提供的一实施例，所述反光层为白色的环氧胶、混合了固化剂及微型氧化钛颗粒的硅胶材料。\n\n[0018]本申请还提供一种micro LED显示面板的制作方法，该方法包括以下步骤：\n\n[0019]S10，在衬底基板上依次沉积聚酰亚胺层、薄膜晶体管层、量子点层以及薄膜封装层；\n\n[0020]S20，在所述薄膜晶体管层背离所述衬底基板一侧，与所述薄膜封装层相同的膜层内设置一层铜垫，并在所述铜垫上方设置一层金属焊材；\n\n[0021]S30，沿所述铜垫和所述金属焊材背离所述薄膜封装层的一侧切割所述衬底基板，去掉第一衬底基板，保留第一聚酰亚胺层、所述第一薄膜晶体管层、第二衬底基板、第二聚酰亚胺层以及第二薄膜晶体管层；\n\n[0022]S40，翻折所述第二衬底基板、所述第二聚酰亚胺层以及所述第二薄膜晶体管层至所述薄膜封装层背离所述量子点层的一侧，使得所述第二薄膜晶体管层正对于所述薄膜封装层；\n\n[0023]S50，在所述第二薄膜晶体管层与所述薄膜封装层之间设置驱动芯片和金属走线绑定区，所述金属绑定区的一端电性连接所述铜垫，所述金属绑定区的另一端电性连接印刷电路板；\n\n[0024]S60，在第一聚酰亚胺层背离所述量子点层的一侧沉积色阻层、黑色堤以及第三衬底基板。\n\n[0025]根据本申请提供的一实施例，步骤“S10”中，所述量子点层的沉积包括：\n\n[0026]S101，采用紫外胶在所述薄膜晶体管基板的一侧黏贴所述量子点层；\n\n[0027]S102，再在所述量子点层的四周以及背离所述薄膜晶体管层的一侧涂布一层白色反光材料；\n\n[0028]S103，对所述量子点层进行切割，分割成多个量子点层小单元。\n\n[0029]根据本申请提供的一实施例，所述金属焊接为激光加热焊接或是加热头加热焊。\n\n[0030]与现有技术相比，本申请提供的一种micro LED显示面板及其制作方法具有的有益效果为：\n\n[0031]1.首先，本申请所提供的micro LED显示面板，所述驱动单元设置在所述显示单元的背面，相对于现有的显示面板显示区与非显示区设置于同一平面内，缩小了显示面板的边框，可以真正实现无边框显示；\n\n[0032]2.其次，本申请所提供的micro LED显示面板，设置有量子点层和色阻层，当所述量子点层发出的光经过所述色阻层时，会根据所述色阻层的颜色而发生变化，实现多种颜色的转换；\n\n[0033]3.最后，本申请所提供的micro LED显示面板为底发光型micro LED显示面板，即所述量子点层的四个侧边以及背离所述薄膜晶体管层的一侧均设置有反光层。\n\n附图说明\n\n[0034]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0035]图1为现有的micro LED显示面板的结构示意图。\n\n[0036]图2为本申请实施例提供的micro LED显示面板的结构示意图。\n\n[0037]图3为本申请实施例提供的micro LED显示面板A-A剖面的结构示意图。\n\n[0038]图4为本申请实施例提供的micro LED显示面板制作方法的流程示意图。\n\n具体实施方式\n\n[0039]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0040]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0041]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0042]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0043]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0044]本申请提供一种micro LED显示面板及其制作方法，具体参阅图1-图4。\n\n[0045]参阅图1，为现有的micro LED显示面板的结构示意图。包括：显示区11、驱动单元12以及连接所述显示区11与所述驱动单元12的第一覆晶薄膜13、第二覆晶薄膜14。fanout区玻璃(即驱动单元12)与AA区11玻璃贴合后，需要进行背面线路的保护，需要对线路印刷边进行玻璃磨边，制程非常复杂，而且侧面印刷的线路在LED转移、绑定及拼接组装的过程中容易出现侧面印刷线路的刮蹭、碰撞或挤压，导致线路的损坏，显示面板的良率降低且双玻璃侧面线路与单玻璃背板线路制程复杂、成本高昂。因此，本申请特提出一种micro LED显示面板及其制作方法。\n\n[0046]参阅图2，本申请提供的一种micro LED显示面板的结构示意图，包括：驱动单元22和显示单元21；所述驱动单元22与所述显示单元21均包括六个端面；所述驱动单元22通过固定连接设置在背离所述显示面板出光一侧，所述驱动单元22的第四端面与所述显示单元21的第四端面位于同一平面内，使得原来与所述显示单元21位于同一平面内的所述驱动单元22收窄至所述显示单元21的背面，可真正实现窄边框显示；所述显示单元21包括：量子点层215和色阻层212，所述量子点层215正对于所述色阻层212进行设置，所述色阻层212对所述量子点层215发出的光线颜色进行转换。\n\n[0047]进一步地，所述固定连接采用金属焊接或是异方性导电胶连接。所述金属焊接的材料为：金、锌、锡、铟、锡铅其中的一种或是多种的组合，均具有较低的熔点。\n\n[0048]在本申请的一些实施例中，所述量子点层为蓝色量子点层。\n\n[0049]进一步地，参阅图3，为本申请实施例提供的micro LED显示面板A-A剖面的结构示意图。所述色阻层212包括：红色色阻层2121、绿色色阻层2122、透明色阻层2123以及黑色堤，所述黑色堤设置在相邻的两个色阻层之间，其作用类似于黑色矩阵，防止各色阻层之间漏光。由于所述量子点层215为蓝色发光层，因此，当所述蓝色发光层发出的蓝光经过所述红色色阻层2121时，所述红色量子点层2121受到激发而发出红光，形成红色像素；当所述蓝光发光层发出的蓝光经过所述绿色量子点层2122时，所述绿色量子点层2122受到激发而发出绿光，形成绿色像素；当所述蓝光发光层发出的蓝光经过所述透明色阻层2123时，所述透明色阻层2123可直接透过所述蓝光发光层发出的蓝光，形成蓝色像素，从而形成红、绿、蓝三基色合成的彩色图像。\n\n[0050]进一步地，为了有效地利用光能，以及防止所述MicroLED量子点层215发光阵列中的像素间颜色的相互干扰，可有效地提升暗态下的亮度，从而提升所述MicroLED显示面板的对比度。所述micro LED显示面板为底发光型显示面板，即所述量子点层215的四个侧边以及背离所述薄膜晶体管层214的一侧均设置有反光层。所述反光层为白色的环氧胶、混合了固化剂及微型氧化钛颗粒的硅胶材料，也可以为银或铝等金属，优选白色的环氧胶、混合了固化剂及微型氧化钛颗粒的硅胶材料。光线经过所述反光层进行反射，从而再一次被所述量子点层215吸收，防止光线进入相邻的所述量子点单元内。同时，还可在所述反光层上沉积一层惰性保护层，所述惰性保护层可为聚氨酯、环氧树脂、派瑞林等单层或多层复合膜，以阻隔外界的水氧，用来保护所述反光层，防止所述反光层被氧化。\n\n[0051]进一步地，所述第二衬底基板211和所述第三衬底基板221可为玻璃基板。所述第三衬底基板211设置在所述色阻层212的下方，所述第一聚酰亚胺层213、所述第一薄膜晶体管层214、所述量子点层215以及所述薄膜封装层216依次层叠设置在所述色阻层的上方；所述薄膜封装层216覆盖在所述量子点层215上面可阻挡水、氧进入所述量子点层215，可提升所述量子点层215可靠性，进而保证所述MicroLED显示面板的可靠性。\n\n[0052]进一步地，所述第一薄膜晶体管层214上方，所述薄膜封装层216的侧边，还设置有第一铜垫226和金属焊材或是异方性导电胶225，将所述显示单元21与所述驱动单元22进行电性连接。\n\n[0053]进一步地，所述驱动单元22由上至下还包括：第二衬底基板221、所述第二聚酰亚胺层222、所述第二薄膜晶体管层223以及所述第二铜垫224，同时，所述第二铜垫224电性连接所述金属绑定区228的一端，所述金属绑定区228的另一端电性连接所述印刷电路板23、24，所述金属绑定区227内还设置有驱动芯片227。\n\n[0054]参阅图4，本申请还提供一种micro LED显示面板的制作方法，该方法包括以下步骤：S10，在衬底基板上依次沉积聚酰亚胺层、薄膜晶体管层、量子点层以及薄膜封装层；S20，在所述薄膜晶体管层背离所述衬底基板一侧，与所述薄膜封装层相同的膜层内设置一层铜垫，并在所述铜垫上方设置一层金属焊材；S30，沿所述铜垫和所述金属焊材背离所述薄膜封装层的一侧切割所述衬底基板，去掉第一衬底基板，保留第一聚酰亚胺层、所述第一薄膜晶体管层、第二衬底基板、第二聚酰亚胺层以及第二薄膜晶体管层；S40，翻折所述第二衬底基板、所述第二聚酰亚胺层以及所述第二薄膜晶体管层至所述薄膜封装层背离所述量子点层的一侧，使得所述第二薄膜晶体管层正对于所述薄膜封装层；S50，在所述第二薄膜晶体管层与所述薄膜封装层之间设置驱动芯片和金属走线绑定区，所述金属绑定区的一端电性连接所述铜垫，所述金属绑定区的另一端电性连接印刷电路板；S60，在第一聚酰亚胺层背离所述量子点层的一侧沉积色阻层、黑色堤以及第三衬底基板。\n\n[0055]根据本申请提供的一实施例，步骤“S10”中，所述量子点层的沉积包括：S101，采用紫外胶在所述薄膜晶体管基板的一侧黏贴所述量子点层；S102，再在所述量子点层的四周以及背离所述薄膜晶体管层的一侧涂布一层白色反光材料；S103，对所述量子点层进行切割，分割成多个量子点层小单元。\n\n[0056]根据本申请提供的一实施例，所述金属焊接为激光加热焊接或是加热头加热焊。\n\n[0057]因此，本申请提供的一种micro LED显示面板及其制作方法的有益效果为：首先，本申请所提供的micro LED显示面板，所述驱动单元设置在所述显示单元的背面，相对于现有的显示面板显示区与非显示区设置于同一平面内，缩小了显示面板的边框，可以真正实现无边框显示；其次，本申请所提供的micro LED显示面板，设置有量子点层和色阻层，当所述量子点层发出的光经过所述色阻层时，会根据所述色阻层的颜色而发生变化，实现多种颜色的转换；最后，本申请所提供的micro LED显示面板为底发光型micro LED显示面板，即所述量子点层的四个侧边以及背离所述薄膜晶体管层的一侧均设置有反光层。\n\n[0058]以上对本申请实施例所提供的一种micro LED显示面板及其制作方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10794, 23848, '技术领域\n\n[0001]本发明涉及背光技术领域，尤其涉及一种Mini LED背光结构和一种Mini LED背光模组。\n\n背景技术\n\n[0002]现有Mini LED背光结构中，由于玻璃基板只能线路面放置LED阵列或其余元器件，而其余元器件在背光会吸光，面积太大会在背光形成暗影，也无法放置如连接器面积较大的元件，故只能通过覆晶薄膜与外部电路连接，因此，现有Mini LED背光结构存在连接器和其余元器件不能设置在玻璃基板表面的技术问题。\n\n发明内容\n\n[0003]本发明实施例提供一种Mini LED背光结构和一种Mini LED背光模组，可缓解现有Mini LED背光结构存在连接器和其余元器件不能设置在玻璃基板表面的技术问题。\n\n[0004]本发明提供一种Mini LED背光结构，包括：\n\n[0005]背板；以及\n\n[0006]设置于所述背板上方的玻璃基板，所述玻璃基板包括线路面、以及非线路面，所述非线路面靠近所述背板一侧，所述非线路面表面设置有LED阵列、以及连接器；以及\n\n[0007]反射片，所述反射片设置于所述线路面上；\n\n[0008]其中，所述背板与所述玻璃基板之间存在间距用于放置LED阵列、以及连接器，所述连接器通过导线与外部电路电连接，所述LED阵列的发光面朝向所述反射片。\n\n[0009]在本发明实施例提供的Mini LED背光结构中，所述非线路面还设置有其余元器件，所述其余元器件围绕所述LED阵列设置。\n\n[0010]在本发明实施例提供的Mini LED背光结构中，所述LED阵列上方未设置反射片，所述其余元器件以及连接器上方设置有反射片。\n\n[0011]在本发明实施例提供的Mini LED背光结构中，所述背板处设置有通孔，所述连接器通过通孔与外部电路电连接。\n\n[0012]在本发明实施例提供的Mini LED背光结构中，所述连接器从侧面或背板的其他区域通过导线直接与外部电路电连接。\n\n[0013]在本发明实施例提供的Mini LED背光结构中，所述LED阵列在所述非线路面上呈阵列排布。\n\n[0014]本发明提供一种Mini LED背光模组，包括Mini LED背光结构、以及依次设置于所述Mini LED背光结构上方的扩散板、光学膜片、屏幕，所述Mini LED背光结构包括:\n\n[0015]背板；以及\n\n[0016]设置于所述背板上方的玻璃基板，所述玻璃基板包括线路面、以及非线路面，所述非线路面靠近所述背板一侧，所述非线路面表面设置有LED阵列、以及连接器；以及\n\n[0017]反射片，所述反射片设置于所述线路面上；\n\n[0018]其中，所述背板与所述玻璃基板之间存在间距用于放置LED阵列、以及连接器，所述连接器通过导线与外部电路电连接，所述LED阵列的发光面朝向所述反射片。\n\n[0019]在本发明实施例提供的Mini LED背光模组中，所述非线路面还设置有其余元器件，所述其余元器件围绕所述LED阵列设置,所述LED阵列上方设置有导光板，所述导光板两侧设置有反射片。\n\n[0020]在本发明实施例提供的Mini LED背光模组中，所述背板处设置有通孔，所述连接器通过通孔与外部电路电连接，所述通孔的纵截面形状为梯形或矩形。\n\n[0021]在本发明实施例提供的Mini LED背光模组中，相邻所述LED阵列之间的间距相等。\n\n[0022]有益效果：本发明实施例提供的Mini LED背光结构，包括背板、玻璃基板、反射片，所述玻璃基板设置在所述背板上，所述玻璃基板包括线路面、以及非线路面，所述非线路面靠近所述背板一侧，所述非线路面表面设置有LED阵列、以及连接器，其中，所述背板与所述玻璃基板之间存在间距用于放置LED阵列、以及连接器，所述连接器通过导线与外部电路电连接，所述LED阵列的发光面朝向所述反射片；通过将LED阵列设置在非线路面，可将其余元器件和连接器设置在非线路面，不会影响背光效果，节省了材料，缓解了现有Mini LED背光结构存在连接器和其余元器件不能设置在玻璃基板表面的技术问题。\n\n附图说明\n\n[0023]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0024]图1为本发明实施例提供的Mini LED背光结构的第一种截面示意图；\n\n[0025]图2为本发明实施例提供的Mini LED背光结构的第二种截面示意图；\n\n[0026]图3为本发明实施例提供的Mini LED背光模组的第一种截面示意图；\n\n[0027]图4为本发明实施例提供的Mini LED背光模组的第二种截面示意图。\n\n具体实施方式\n\n[0028]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0029]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0030]如图1所示，本发明实施例提供的Mini LED背光结构1包括背板10、设置于所述背板上方的玻璃基板20、反射片30，所述玻璃基板包括线路面S1、以及非线路面S2，所述非线路面S2靠近所述背板10一侧，所述非线路面S2表面设置有LED阵列201、以及连接器202，反射片30设置于所述线路面S1上，其中，所述背板10与所述玻璃基板20之间存在间距用于放置LED阵列201、以及连接器202，所述连接器202通过导线与外部电路40电连接，所述LED阵列201的发光面朝向所述反射片30。\n\n[0031]在本实施例中，Mini LED背光结构1包括背板10、设置于所述背板上方的玻璃基板20、反射片30，所述玻璃基板包括线路面S1、以及非线路面S2，所述非线路面S2靠近所述背板10一侧，所述非线路面S2表面设置有LED阵列201、以及连接器202，反射片30设置于所述线路面S1上，其中，所述背板10与所述玻璃基板20之间存在间距用于放置LED阵列201、以及连接器202，所述连接器202通过导线与外部电路40电连接，所述LED阵列201的发光面朝向所述反射片30；通过将LED阵列201设置在非线路面S2，可将其余元器件和连接器202设置在非线路面S2，不会影响背光效果，节省了材料，缓解了现有Mini LED背光结构1存在连接器202和其余元器件203不能设置在玻璃基板20表面的技术问题。\n\n[0032]其中，发光二极管(Light Emi tt ing Diode，LED)为背光结构中的背光源，多个发光二极管设置于所述玻璃基板的所述非线路面。\n\n[0033]在一种实施例中，如图2所示，所述非线路面S2还设置有其余元器件203，所述其余元器件203围绕所述LED阵列201设置。\n\n[0034]其中，所述其余元器件203为透明材料，所述其余元器件203在背光不会吸光，不会在背光处形成暗影。\n\n[0035]其中，在LED阵列201周围区域，所述其余元器件203的制备材料可以为透明材料，在远离LED阵列201的区域，所述其余元器件203的制备材料可以为不透光。\n\n[0036]在一种实施例中，所述LED阵列201上方未设置反射片30，所述其余元器件203以及连接器202上方设置有反射片30。\n\n[0037]其中，所述反射片30用于将LED阵列201周围的光反射回来，提高光的利用率。\n\n[0038]其中，从LED阵列201的周围区域到远离LED阵列201的区域，所述反射片30的厚度依次减小。\n\n[0039]在一种实施例中，所述背板10处设置有通孔，所述连接器202通过通孔与外部电路40电连接。\n\n[0040]其中，所述通孔的截面形状为矩形、梯形、菱形中的任一种。\n\n[0041]其中，所述通孔可以设置在所述连接器202正下方。\n\n[0042]其中，所述连接器202可以设置在相邻所述LED阵列201之间。\n\n[0043]在一种实施例中，所述连接器202从侧面或背板10的其他区域通过导线直接与外部电路40电连接。\n\n[0044]其中，所述连接器202可以从背板10的侧面区域通过导线与所述外部电路40电连接。\n\n[0045]其中，所述连接器202也可以从其他区域与外部电路40电连接，其他区域包括背板10与玻璃基板20的间距处。\n\n[0046]在一种实施例中，所述LED阵列201在所述非线路面S2上呈阵列排布。\n\n[0047]其中，相邻所述LED阵列201的间距相等。\n\n[0048]在现有Mini LED背光结构1中，由于玻璃基板20只有单层线路，只能线路面S1放置LED阵列201或其余元器件203，而其余元器件203在背光会吸光，吸光面积太大会在背光形成暗影，同时连接器202面积较大的元件，故只能通过覆晶薄膜和印刷电路板与外部电路40连接，成本高且不利于组装，如果在线路面S1设置其他元器件，由于元器件本身不发光，会造成画面有黑色的块状，而非纯白画面。\n\n[0049]本发明提供的Mini LED背光结构1和Mini LED背光模组2，通过将LED阵列201设置在非线路面S2，同时可以将其余元器件203和连接器202设置非线路面S2，从而不需要通过覆晶薄膜和印刷电路板与外部电路40连接，节省了覆晶薄膜、印刷电路板等物料。\n\n[0050]如图3所示，本发明实施例提供的Mini LED背光模组2包括Mini LED背光结构、以及依次设置于所述Mini LED背光结构上方的扩散板50、光学膜片60、屏幕70，所述Mini LED背光结构包括背板10、设置于所述背板10上方的玻璃基板20、反射片30，所述玻璃基板20包括线路面S1、以及非线路面S2，所述非线路面S2靠近所述背板10一侧，所述非线路面S2表面设置有LED阵列201、以及连接器202，反射片30设置于所述线路面S1上，其中，所述背板10与所述玻璃基板20之间存在间距用于放置LED阵列201、以及连接器202，所述连接器202通过导线与外部电路40电连接，所述LED阵列201的发光面朝向所述反射片30。\n\n[0051]在本实施例中，Mini LED背光模组2包括Mini LED背光结构、以及依次设置于所述Mini LED背光结构上方的扩散板50、光学膜片60、屏幕70，所述Mini LED背光结构包括背板10、设置于所述背板10上方的玻璃基板20、反射片30，所述玻璃基板20包括线路面S1、以及非线路面S2，所述非线路面S2靠近所述背板10一侧，所述非线路面S2表面设置有LED阵列201、以及连接器202，反射片30设置于所述线路面S1上，其中，所述背板10与所述玻璃基板20之间存在间距用于放置LED阵列201、以及连接器202，所述连接器202通过导线与外部电路40电连接，所述LED阵列201的发光面朝向所述反射片30；通过将LED阵列201设置在非线路面S2，可将其余元器件203和连接器202设置在非线路面S2，不会影响背光效果，节省了材料，缓解了现有Mini LED背光结构存在连接器202和其余元器件203不能设置在玻璃基板20表面的技术问题。\n\n[0052]在一种实施例中，所述非线路面S2还设置有其余元器件203，所述其余元器件203围绕所述LED阵列201设置,所述LED阵列201上方设置有导光板204，所述导光板204两侧设置有反射片30。\n\n[0053]在一种实施例中，所述背板10处设置有通孔，所述连接器202通过通孔与外部电路40电连接，所述通孔的纵截面形状为梯形或矩形。\n\n[0054]在一种实施例中，所述LED阵列201在所述非线路面S2上呈阵列排布，相邻所述LED阵列201之间的间距相等。\n\n[0055]在一种实施例中，在Mini LED背光模组2中，所述非线路面S2还设置有其余元器件203，所述其余元器件203围绕所述LED阵列201设置。\n\n[0056]其中，所述其余元器件203为透明材料，所述其余元器件203在背光不会吸光，不会在背光处形成暗影。\n\n[0057]其中，在LED阵列201周围区域，所述其余元器件203的制备材料可以为透明材料，在远离LED阵列201的区域，所述其余元器件203的制备材料可以为不透光。\n\n[0058]在一种实施例中，在Mini LED背光模组2中，所述LED阵列201上方未设置反射片30，所述其余元器件203以及连接器202上方设置有反射片30。\n\n[0059]其中，所述反射片30用于将LED阵列201周围的光反射回来，提高光的利用率。\n\n[0060]其中，从LED阵列201的周围区域到远离LED阵列201的区域，所述反射片30的厚度依次减小。\n\n[0061]在一种实施例中，在Mini LED背光模组2中，所述背板10处设置有通孔，所述连接器202通过通孔与外部电路40电连接。\n\n[0062]其中，所述通孔的截面形状为矩形、梯形、菱形中的任一种。\n\n[0063]其中，所述通孔可以设置在所述连接器202正下方。\n\n[0064]其中，所述连接器202可以设置在相邻所述LED阵列201之间。\n\n[0065]在一种实施例中，在Mini LED背光模组2中，所述连接器202从侧面或背板10的其他区域通过导线直接与外部电路40电连接。\n\n[0066]其中，所述连接器202可以从背板10的侧面区域通过导线与所述外部电路40电连接。\n\n[0067]其中，所述连接器202也可以从其他区域与外部电路40电连接，其他区域包括背板10与玻璃基板20的间距处。\n\n[0068]在一种实施例中，在反置式Mini LEDMini LED背光模组2中，所述LED阵列201在所述非线路面S2上呈阵列排布。\n\n[0069]其中，相邻所述LED阵列201的间距相等。\n\n[0070]在一种实施例中，在线路面S1设置有导光板204，在所述导光板204的两侧分别设有所述反射片30和所述扩散膜，所述导光板204设置在LED阵列201正上方。\n\n[0071]其中，所述扩散膜上设有所述增光膜。\n\n[0072]其中，在所述增光膜的外表面贴敷上扩散膜。\n\n[0073]在一种实施例中，所述光学膜片60包括第一光学膜片60和第二光学膜片60，所述第一光学膜片60位于所述Mini LED背光结构1上方，所述第二光学膜片60设置于所述第一光学膜片60上方。\n\n[0074]其中，所述第一光学膜片60包括靠近所述背光光源的第一表面和远离所述背光光源的第二表面，所述第一表面具有多个第一光扩散结构，所述第二表面具有多个第一支撑反射结构。\n\n[0075]在一种实施中，通过将LED阵列201设置在非线路面S2，可将其余元器件203和连接器202设置在非线路面S2，不会影响背光效果，节省了材料，缓解了现有Mini LED背光结构存在连接器202和其余元器件203不能设置在玻璃基板20表面的技术问题。\n\n[0076]在一种实施例中，可以通过背板10开孔引线连接连接器202和外部电路40，也可以利用导线从背板10其他地方引出。\n\n[0077]在一种实施例中，连接器202的功能是将信号、电源从其他电路板引入至玻璃基板20。\n\n[0078]在一种实施例中，所述背板10和所述玻璃基板20保持一定间距，用来容纳LED阵列201以及其他元器件。\n\n[0079]其中，所述连接器202的一部分可以设置在通孔内，所述背板10和所述玻璃基板20的间距大于所述LED阵列201的高度。\n\n[0080]其中，所述背板10和所述玻璃基板20的间距大于所述其余元器件203的高度。\n\n[0081]在一种实施例中，如图4所示，LED阵列201设置在非线路面S2，可以通过在LED阵列201上方设置光线调整单元205来缓解发光不均的现象，用于减小第二区域和第一区域之间的光线亮度差。\n\n[0082]其中，所述光线调整单元205可以设置在所述导光板204的出光面，所述光线调整单元205的正投影覆盖所述导光板204紧邻所述LED阵列201的边缘区域。\n\n[0083]其中，所述第一区域为相邻两颗LED阵列201间隔的区域；所述第二区域为所述LED阵列201正对的区域。\n\n[0084]其中，所述光线调整单元205还可以设置在所述玻璃基板20线路面S1上，所述光线调整单元205在玻璃基板20上的正投影覆盖所述LED阵列201在玻璃基板20上的正投影。\n\n[0085]本发明实施例提供的Mini LED背光结构包括背板、设置于所述背板上方的玻璃基板、反射片，所述玻璃基板包括线路面、以及非线路面，所述非线路面靠近所述背板一侧，所述非线路面表面设置有LED阵列、以及连接器，反射片设置于所述线路面上，其中，所述背板与所述玻璃基板之间存在间距用于放置LED阵列、以及连接器，所述连接器通过导线与外部电路电连接，所述LED阵列的发光面朝向所述反射片；通过将LED阵列设置在非线路面，可将其余元器件和连接器设置在非线路面，不会影响背光效果，节省了材料，缓解了现有MiniLED背光结构存在连接器和其余元器件不能设置在玻璃基板表面的技术问题。\n\n[0086]以上对本发明实施例所提供的一种进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。', '技术领域\n\n[0001]本发明涉及背光技术领域，尤其涉及一种Mini LED背光结构和一种Mini LED背光模组。\n\n背景技术\n\n[0002]现有Mini LED背光结构中，由于玻璃基板只能线路面放置LED阵列或其余元器件，而其余元器件在背光会吸光，面积太大会在背光形成暗影，也无法放置如连接器面积较大的元件，故只能通过覆晶薄膜与外部电路连接，因此，现有Mini LED背光结构存在连接器和其余元器件不能设置在玻璃基板表面的技术问题。\n\n发明内容\n\n[0003]本发明实施例提供一种Mini LED背光结构和一种Mini LED背光模组，可缓解现有Mini LED背光结构存在连接器和其余元器件不能设置在玻璃基板表面的技术问题。\n\n[0004]本发明提供一种Mini LED背光结构，包括：\n\n[0005]背板；以及\n\n[0006]设置于所述背板上方的玻璃基板，所述玻璃基板包括线路面、以及非线路面，所述非线路面靠近所述背板一侧，所述非线路面表面设置有LED阵列、以及连接器；以及\n\n[0007]反射片，所述反射片设置于所述线路面上；\n\n[0008]其中，所述背板与所述玻璃基板之间存在间距用于放置LED阵列、以及连接器，所述连接器通过导线与外部电路电连接，所述LED阵列的发光面朝向所述反射片。\n\n[0009]在本发明实施例提供的Mini LED背光结构中，所述非线路面还设置有其余元器件，所述其余元器件围绕所述LED阵列设置。\n\n[0010]在本发明实施例提供的Mini LED背光结构中，所述LED阵列上方未设置反射片，所述其余元器件以及连接器上方设置有反射片。\n\n[0011]在本发明实施例提供的Mini LED背光结构中，所述背板处设置有通孔，所述连接器通过通孔与外部电路电连接。\n\n[0012]在本发明实施例提供的Mini LED背光结构中，所述连接器从侧面或背板的其他区域通过导线直接与外部电路电连接。\n\n[0013]在本发明实施例提供的Mini LED背光结构中，所述LED阵列在所述非线路面上呈阵列排布。\n\n[0014]本发明提供一种Mini LED背光模组，包括Mini LED背光结构、以及依次设置于所述Mini LED背光结构上方的扩散板、光学膜片、屏幕，所述Mini LED背光结构包括:\n\n[0015]背板；以及\n\n[0016]设置于所述背板上方的玻璃基板，所述玻璃基板包括线路面、以及非线路面，所述非线路面靠近所述背板一侧，所述非线路面表面设置有LED阵列、以及连接器；以及\n\n[0017]反射片，所述反射片设置于所述线路面上；\n\n[0018]其中，所述背板与所述玻璃基板之间存在间距用于放置LED阵列、以及连接器，所述连接器通过导线与外部电路电连接，所述LED阵列的发光面朝向所述反射片。\n\n[0019]在本发明实施例提供的Mini LED背光模组中，所述非线路面还设置有其余元器件，所述其余元器件围绕所述LED阵列设置,所述LED阵列上方设置有导光板，所述导光板两侧设置有反射片。\n\n[0020]在本发明实施例提供的Mini LED背光模组中，所述背板处设置有通孔，所述连接器通过通孔与外部电路电连接，所述通孔的纵截面形状为梯形或矩形。\n\n[0021]在本发明实施例提供的Mini LED背光模组中，相邻所述LED阵列之间的间距相等。\n\n[0022]有益效果：本发明实施例提供的Mini LED背光结构，包括背板、玻璃基板、反射片，所述玻璃基板设置在所述背板上，所述玻璃基板包括线路面、以及非线路面，所述非线路面靠近所述背板一侧，所述非线路面表面设置有LED阵列、以及连接器，其中，所述背板与所述玻璃基板之间存在间距用于放置LED阵列、以及连接器，所述连接器通过导线与外部电路电连接，所述LED阵列的发光面朝向所述反射片；通过将LED阵列设置在非线路面，可将其余元器件和连接器设置在非线路面，不会影响背光效果，节省了材料，缓解了现有Mini LED背光结构存在连接器和其余元器件不能设置在玻璃基板表面的技术问题。\n\n附图说明\n\n[0023]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0024]图1为本发明实施例提供的Mini LED背光结构的第一种截面示意图；\n\n[0025]图2为本发明实施例提供的Mini LED背光结构的第二种截面示意图；\n\n[0026]图3为本发明实施例提供的Mini LED背光模组的第一种截面示意图；\n\n[0027]图4为本发明实施例提供的Mini LED背光模组的第二种截面示意图。\n\n具体实施方式\n\n[0028]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0029]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0030]如图1所示，本发明实施例提供的Mini LED背光结构1包括背板10、设置于所述背板上方的玻璃基板20、反射片30，所述玻璃基板包括线路面S1、以及非线路面S2，所述非线路面S2靠近所述背板10一侧，所述非线路面S2表面设置有LED阵列201、以及连接器202，反射片30设置于所述线路面S1上，其中，所述背板10与所述玻璃基板20之间存在间距用于放置LED阵列201、以及连接器202，所述连接器202通过导线与外部电路40电连接，所述LED阵列201的发光面朝向所述反射片30。\n\n[0031]在本实施例中，Mini LED背光结构1包括背板10、设置于所述背板上方的玻璃基板20、反射片30，所述玻璃基板包括线路面S1、以及非线路面S2，所述非线路面S2靠近所述背板10一侧，所述非线路面S2表面设置有LED阵列201、以及连接器202，反射片30设置于所述线路面S1上，其中，所述背板10与所述玻璃基板20之间存在间距用于放置LED阵列201、以及连接器202，所述连接器202通过导线与外部电路40电连接，所述LED阵列201的发光面朝向所述反射片30；通过将LED阵列201设置在非线路面S2，可将其余元器件和连接器202设置在非线路面S2，不会影响背光效果，节省了材料，缓解了现有Mini LED背光结构1存在连接器202和其余元器件203不能设置在玻璃基板20表面的技术问题。\n\n[0032]其中，发光二极管(Light Emi tt ing Diode，LED)为背光结构中的背光源，多个发光二极管设置于所述玻璃基板的所述非线路面。\n\n[0033]在一种实施例中，如图2所示，所述非线路面S2还设置有其余元器件203，所述其余元器件203围绕所述LED阵列201设置。\n\n[0034]其中，所述其余元器件203为透明材料，所述其余元器件203在背光不会吸光，不会在背光处形成暗影。\n\n[0035]其中，在LED阵列201周围区域，所述其余元器件203的制备材料可以为透明材料，在远离LED阵列201的区域，所述其余元器件203的制备材料可以为不透光。\n\n[0036]在一种实施例中，所述LED阵列201上方未设置反射片30，所述其余元器件203以及连接器202上方设置有反射片30。\n\n[0037]其中，所述反射片30用于将LED阵列201周围的光反射回来，提高光的利用率。\n\n[0038]其中，从LED阵列201的周围区域到远离LED阵列201的区域，所述反射片30的厚度依次减小。\n\n[0039]在一种实施例中，所述背板10处设置有通孔，所述连接器202通过通孔与外部电路40电连接。\n\n[0040]其中，所述通孔的截面形状为矩形、梯形、菱形中的任一种。\n\n[0041]其中，所述通孔可以设置在所述连接器202正下方。\n\n[0042]其中，所述连接器202可以设置在相邻所述LED阵列201之间。\n\n[0043]在一种实施例中，所述连接器202从侧面或背板10的其他区域通过导线直接与外部电路40电连接。\n\n[0044]其中，所述连接器202可以从背板10的侧面区域通过导线与所述外部电路40电连接。\n\n[0045]其中，所述连接器202也可以从其他区域与外部电路40电连接，其他区域包括背板10与玻璃基板20的间距处。\n\n[0046]在一种实施例中，所述LED阵列201在所述非线路面S2上呈阵列排布。\n\n[0047]其中，相邻所述LED阵列201的间距相等。\n\n[0048]在现有Mini LED背光结构1中，由于玻璃基板20只有单层线路，只能线路面S1放置LED阵列201或其余元器件203，而其余元器件203在背光会吸光，吸光面积太大会在背光形成暗影，同时连接器202面积较大的元件，故只能通过覆晶薄膜和印刷电路板与外部电路40连接，成本高且不利于组装，如果在线路面S1设置其他元器件，由于元器件本身不发光，会造成画面有黑色的块状，而非纯白画面。\n\n[0049]本发明提供的Mini LED背光结构1和Mini LED背光模组2，通过将LED阵列201设置在非线路面S2，同时可以将其余元器件203和连接器202设置非线路面S2，从而不需要通过覆晶薄膜和印刷电路板与外部电路40连接，节省了覆晶薄膜、印刷电路板等物料。\n\n[0050]如图3所示，本发明实施例提供的Mini LED背光模组2包括Mini LED背光结构、以及依次设置于所述Mini LED背光结构上方的扩散板50、光学膜片60、屏幕70，所述Mini LED背光结构包括背板10、设置于所述背板10上方的玻璃基板20、反射片30，所述玻璃基板20包括线路面S1、以及非线路面S2，所述非线路面S2靠近所述背板10一侧，所述非线路面S2表面设置有LED阵列201、以及连接器202，反射片30设置于所述线路面S1上，其中，所述背板10与所述玻璃基板20之间存在间距用于放置LED阵列201、以及连接器202，所述连接器202通过导线与外部电路40电连接，所述LED阵列201的发光面朝向所述反射片30。\n\n[0051]在本实施例中，Mini LED背光模组2包括Mini LED背光结构、以及依次设置于所述Mini LED背光结构上方的扩散板50、光学膜片60、屏幕70，所述Mini LED背光结构包括背板10、设置于所述背板10上方的玻璃基板20、反射片30，所述玻璃基板20包括线路面S1、以及非线路面S2，所述非线路面S2靠近所述背板10一侧，所述非线路面S2表面设置有LED阵列201、以及连接器202，反射片30设置于所述线路面S1上，其中，所述背板10与所述玻璃基板20之间存在间距用于放置LED阵列201、以及连接器202，所述连接器202通过导线与外部电路40电连接，所述LED阵列201的发光面朝向所述反射片30；通过将LED阵列201设置在非线路面S2，可将其余元器件203和连接器202设置在非线路面S2，不会影响背光效果，节省了材料，缓解了现有Mini LED背光结构存在连接器202和其余元器件203不能设置在玻璃基板20表面的技术问题。\n\n[0052]在一种实施例中，所述非线路面S2还设置有其余元器件203，所述其余元器件203围绕所述LED阵列201设置,所述LED阵列201上方设置有导光板204，所述导光板204两侧设置有反射片30。\n\n[0053]在一种实施例中，所述背板10处设置有通孔，所述连接器202通过通孔与外部电路40电连接，所述通孔的纵截面形状为梯形或矩形。\n\n[0054]在一种实施例中，所述LED阵列201在所述非线路面S2上呈阵列排布，相邻所述LED阵列201之间的间距相等。\n\n[0055]在一种实施例中，在Mini LED背光模组2中，所述非线路面S2还设置有其余元器件203，所述其余元器件203围绕所述LED阵列201设置。\n\n[0056]其中，所述其余元器件203为透明材料，所述其余元器件203在背光不会吸光，不会在背光处形成暗影。\n\n[0057]其中，在LED阵列201周围区域，所述其余元器件203的制备材料可以为透明材料，在远离LED阵列201的区域，所述其余元器件203的制备材料可以为不透光。\n\n[0058]在一种实施例中，在Mini LED背光模组2中，所述LED阵列201上方未设置反射片30，所述其余元器件203以及连接器202上方设置有反射片30。\n\n[0059]其中，所述反射片30用于将LED阵列201周围的光反射回来，提高光的利用率。\n\n[0060]其中，从LED阵列201的周围区域到远离LED阵列201的区域，所述反射片30的厚度依次减小。\n\n[0061]在一种实施例中，在Mini LED背光模组2中，所述背板10处设置有通孔，所述连接器202通过通孔与外部电路40电连接。\n\n[0062]其中，所述通孔的截面形状为矩形、梯形、菱形中的任一种。\n\n[0063]其中，所述通孔可以设置在所述连接器202正下方。\n\n[0064]其中，所述连接器202可以设置在相邻所述LED阵列201之间。\n\n[0065]在一种实施例中，在Mini LED背光模组2中，所述连接器202从侧面或背板10的其他区域通过导线直接与外部电路40电连接。\n\n[0066]其中，所述连接器202可以从背板10的侧面区域通过导线与所述外部电路40电连接。\n\n[0067]其中，所述连接器202也可以从其他区域与外部电路40电连接，其他区域包括背板10与玻璃基板20的间距处。\n\n[0068]在一种实施例中，在反置式Mini LEDMini LED背光模组2中，所述LED阵列201在所述非线路面S2上呈阵列排布。\n\n[0069]其中，相邻所述LED阵列201的间距相等。\n\n[0070]在一种实施例中，在线路面S1设置有导光板204，在所述导光板204的两侧分别设有所述反射片30和所述扩散膜，所述导光板204设置在LED阵列201正上方。\n\n[0071]其中，所述扩散膜上设有所述增光膜。\n\n[0072]其中，在所述增光膜的外表面贴敷上扩散膜。\n\n[0073]在一种实施例中，所述光学膜片60包括第一光学膜片60和第二光学膜片60，所述第一光学膜片60位于所述Mini LED背光结构1上方，所述第二光学膜片60设置于所述第一光学膜片60上方。\n\n[0074]其中，所述第一光学膜片60包括靠近所述背光光源的第一表面和远离所述背光光源的第二表面，所述第一表面具有多个第一光扩散结构，所述第二表面具有多个第一支撑反射结构。\n\n[0075]在一种实施中，通过将LED阵列201设置在非线路面S2，可将其余元器件203和连接器202设置在非线路面S2，不会影响背光效果，节省了材料，缓解了现有Mini LED背光结构存在连接器202和其余元器件203不能设置在玻璃基板20表面的技术问题。\n\n[0076]在一种实施例中，可以通过背板10开孔引线连接连接器202和外部电路40，也可以利用导线从背板10其他地方引出。\n\n[0077]在一种实施例中，连接器202的功能是将信号、电源从其他电路板引入至玻璃基板20。\n\n[0078]在一种实施例中，所述背板10和所述玻璃基板20保持一定间距，用来容纳LED阵列201以及其他元器件。\n\n[0079]其中，所述连接器202的一部分可以设置在通孔内，所述背板10和所述玻璃基板20的间距大于所述LED阵列201的高度。\n\n[0080]其中，所述背板10和所述玻璃基板20的间距大于所述其余元器件203的高度。\n\n[0081]在一种实施例中，如图4所示，LED阵列201设置在非线路面S2，可以通过在LED阵列201上方设置光线调整单元205来缓解发光不均的现象，用于减小第二区域和第一区域之间的光线亮度差。\n\n[0082]其中，所述光线调整单元205可以设置在所述导光板204的出光面，所述光线调整单元205的正投影覆盖所述导光板204紧邻所述LED阵列201的边缘区域。\n\n[0083]其中，所述第一区域为相邻两颗LED阵列201间隔的区域；所述第二区域为所述LED阵列201正对的区域。\n\n[0084]其中，所述光线调整单元205还可以设置在所述玻璃基板20线路面S1上，所述光线调整单元205在玻璃基板20上的正投影覆盖所述LED阵列201在玻璃基板20上的正投影。\n\n[0085]本发明实施例提供的Mini LED背光结构包括背板、设置于所述背板上方的玻璃基板、反射片，所述玻璃基板包括线路面、以及非线路面，所述非线路面靠近所述背板一侧，所述非线路面表面设置有LED阵列、以及连接器，反射片设置于所述线路面上，其中，所述背板与所述玻璃基板之间存在间距用于放置LED阵列、以及连接器，所述连接器通过导线与外部电路电连接，所述LED阵列的发光面朝向所述反射片；通过将LED阵列设置在非线路面，可将其余元器件和连接器设置在非线路面，不会影响背光效果，节省了材料，缓解了现有MiniLED背光结构存在连接器和其余元器件不能设置在玻璃基板表面的技术问题。\n\n[0086]以上对本发明实施例所提供的一种进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10795, 23849, '技术领域\n\n[0001]本申请涉及移动通信技术领域，尤其涉及移动设备技术领域，具体涉及一种柔性彩色滤光膜及其制作方法、全彩微发光二极管器件。\n\n背景技术\n\n[0002]量子点显示技术在色域覆盖率、色彩控制精确性、红绿蓝色彩纯净度等各个维度都对现有的显示技术进行了全面升级，被视为全球显示技术的制高点，也被视为影响全球的显示技术革命。\n\n[0003]但是其仍存在很多技术难点，比如全彩化技术。全彩化解决方案分为两大类，一种是红绿蓝(RGB)三基色芯片直接发光，一种是单色芯片配合色彩转换层。虽然前者技术目前相对成熟，但工艺上还比较困难，此方案还需涉及到更难的芯片巨量转移问题，因此现在比较被看好的全彩化技术当属后者。\n\n[0004]但是目前的单色芯片配合色彩转换层技术的量子点出光率很低。\n\n发明内容\n\n[0005]本发明提供一种柔性彩色滤光膜及其制作方法、全彩微发光二极管器件，可以解决单色芯片配合色彩转换层技术的量子点出光率很低的技术问题。\n\n[0006]本发明提供一种柔性彩色滤光膜，包括聚合物树脂基底、反射层、光扩散层以及量子点层；所述聚合物树脂基底设有多个间隔设置的容置凹槽；相邻的三个所述容置凹槽分别为红光凹槽、绿光凹槽以及蓝光凹槽；所述反射层设于所述红光凹槽以及所述绿光凹槽的槽底；所述光扩散层设于每一所述容置凹槽的内侧壁上；所述量子点层包括绿光量子点层以及红光量子点层，所述绿光量子点层设于所述绿光凹槽内的所述反射层上，所述红光量子点层设于所述红光凹槽内的所述反射层上。\n\n[0007]在使用时，一蓝色光源发出的蓝光从所述容置凹槽的槽口入射，蓝光在所述蓝光凹槽位置直接穿过，蓝光在所述绿光凹槽穿过所述绿光量子点层至所述反射层，蓝光在所述反射层经过折射、反射再次回到所述量子点层，所述量子点层吸收蓝光发出荧光，部分发向四周的荧光被所述光扩散层散射，用于增强对蓝光的吸收从而提高蓝光利用率和所述量子点层的出光率。\n\n[0008]进一步地，所述聚合物树脂基底通过聚二甲基硅氧烷、硅胶或树脂类中的一种材料固化形成。\n\n[0009]进一步地，所述容置凹槽通过对所述聚合物树脂基底进行纳米压印或刻蚀形成。\n\n[0010]进一步地，所述反射层包括分布式布拉格反射镜。\n\n[0011]进一步地，设于所述绿光凹槽的所述反射层的厚度及材质与设于所述红光凹槽的述反射层的厚度及材质不同。\n\n[0012]进一步地，所述光扩散层由光扩散粉与基质胶混合固化形成。\n\n[0013]进一步地，所述光扩散粉在所述光扩散层中的重量比重为5％-20％。\n\n[0014]进一步地，所述光扩散粉材料包括有机材料及无机材料，所述有机材料包括亚克力(PMMA)、聚苯乙烯(PS)、有机硅微球、硅微球中的一种或多种，所述无机材料包括纳米氧化铝、纳米银、纳米金中的一种或多种；所述基质胶由丙烯酸酯胶、聚氨酯胶、环氧胶中的一种或多种材料混合形成。\n\n[0015]进一步地，所述绿光量子点层包括绿光量子点，所述红光量子点层包括红光量子点；所述红光量子点材料和所述绿光量子点材料由量子点溶液、量子点粉末或量子点-聚合物粉末中的一种混合形成。\n\n[0016]本发明还提供一种上述柔性彩色滤光膜的制作方法，其包括以下步骤：\n\n[0017]在一基板上沉积液态聚合物树脂，经热固化或紫外固化后形成聚合物树脂基底，通过纳米压印或刻蚀所述聚合物树脂基底的方式形成多个间隔设置的容置凹槽，相邻的三个所述容置凹槽分别为红光凹槽、绿光凹槽以及蓝光凹槽；\n\n[0018]在所述红光凹槽以及所述绿光凹槽的槽底制作反射层；\n\n[0019]在每一所述容置凹槽的内侧壁上涂覆光扩散粉与基质胶混合物并热固化的方式制作光扩散层；以及\n\n[0020]在所述光扩散层上方通过喷墨打印或雾化喷涂方式分别在所述绿光凹槽、所述红光凹槽填充绿光量子点材料、红光量子点材料，通过固化得到量子点层。\n\n[0021]本发明还提供一种全彩微发光二极管器件，其包括上述柔性彩色滤光膜。\n\n[0022]进一步地，所述全彩微发光二极管器件还包括与所述柔性彩色滤光膜设有所述容置凹槽一侧相贴合的蓝光背板，所述蓝光背板上设有多个间隔设置的蓝色光源，所述蓝色光源分别与所述容置凹槽对应设置，所述蓝色光源分别卡设于所述容置凹槽的槽口位置。所述蓝色光源优选为蓝光微发光二极管芯片。\n\n[0023]本发明的有益效果在于，提供一种柔性彩色滤光膜及其制作方法、全彩微发光二极管器件，通过设置反射层以及光扩散层用于增强量子点层对蓝光的吸收，从而提高蓝光利用率和所述量子点层的出光率。并将量子点层置于单一短波长的微发光二极管(Micro-LED)阵列上，从而将芯片发出的光转换为红绿蓝(RGB)三色，实现全彩化显示。实现了量子点层对蓝光的吸光度不低于2，从而保证蓝光充分被量子点吸收不低于99％。这样既能保证蓝光的充分利用，提高能量利用率，也能保证显示器的色域、色纯度足够高，从而实现高品质画面。\n\n附图说明\n\n[0024]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0025]图1为本申请实施例提供的柔性彩色滤光膜的结构示意图。\n\n[0026]图2为本申请实施例提供的柔性彩色滤光膜的制作方法的流程图。\n\n[0027]图3为本申请实施例中形成的聚合物树脂基底的结构示意图。\n\n[0028]图4为本申请实施例提供的全彩微发光二极管器件的结构示意图。\n\n具体实施方式\n\n[0029]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0030]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0031]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0032]具体的，请参阅图1、图3所示，本申请实施例提供一种柔性彩色滤光膜10，包括聚合物树脂基底1、反射层2、光扩散层3以及量子点层4；所述聚合物树脂基底1设有多个间隔设置的容置凹槽；相邻的三个所述容置凹槽分别为红光凹槽11、绿光凹槽12以及蓝光凹槽13；所述反射层2设于所述绿光凹槽12以及红光凹槽11的槽底；所述光扩散层3设于每一所述容置凹槽11、12、13的内侧壁上；所述量子点层4包括红光量子点层41以及绿光量子点层42，所述红光量子点层41设于所述红光凹槽11内的所述反射层2上，所述绿光量子点层42设于所述绿光凹槽12内的所述反射层2上。\n\n[0033]在使用时，如图4所示，一蓝色光源22发出的蓝光从所述容置凹槽11、12、13的槽口入射，蓝光在所述蓝光凹槽13位置直接穿过，蓝光在所述红光凹槽11、所述绿光凹槽12穿过所述红光量子点层41、所述绿光量子点层42至所述反射层2，蓝光在所述反射层2经过折射、反射再次回到所述量子点层4，所述量子点层4吸收蓝光发出荧光，部分发向四周的荧光被所述光扩散层散射，用于增强对蓝光的吸收从而提高蓝光利用率和所述量子点层4的出光率。\n\n[0034]本申请实施例将所述量子点层4置于发出单一短波长的蓝色光源22上，所述蓝色光源22为蓝光微发光二极管阵列，所述蓝色光源22优选为蓝光微发光二极管芯片，从而将所述蓝色光源22发出的蓝光转换为红绿蓝(RGB)三色，实现全彩化显示。优选所述量子点层4的厚度为450nm，实现了量子点层4对蓝光的吸光度不低于2，从而保证蓝光充分被量子点吸收不低于99％。这样既能保证蓝光的充分利用，提高能量利用率，也能保证显示器的色域、色纯度足够高，从而实现高品质画面。\n\n[0035]在本申请实施例中，所述聚合物树脂基底1通过聚二甲基硅氧烷、硅胶或树脂类中的一种材料固化形成。所述聚合物树脂基底1能透光且具有柔性，便于弯折。\n\n[0036]在本申请实施例中，所述容置凹槽11、12、13通过对所述聚合物树脂基底1进行纳米压印或刻蚀形成。\n\n[0037]在本申请实施例中，所述反射层2包括分布式布拉格反射镜(DBR)。通过镀膜沉积形成所述反射层2，可抑制单色蓝光微发光二极管蓝光的出射。所述反射层2对蓝光反射率高，透过率低；所述反射层2对红光、绿光反射率低，透射率高。\n\n[0038]在本申请实施例中，设于所述绿光凹槽12的所述反射层2的厚度及材质与设于所述红光凹槽11的述反射层2的厚度及材质不同。\n\n[0039]在本申请实施例中，所述光扩散层3由光扩散粉与基质胶混合固化形成。\n\n[0040]在本申请实施例中，所述光扩散粉在所述光扩散层3中的重量比重为5％-20％。\n\n[0041]在本申请实施例中，所述光扩散粉材料包括有机材料及无机材料，所述有机材料包括亚克力(PMMA)、聚苯乙烯(PS)、有机硅微球、硅微球中的一种或多种，所述无机材料包括纳米氧化铝、纳米银、纳米金中的一种或多种；所述基质胶由丙烯酸酯胶、聚氨酯胶、环氧胶中的一种或多种材料混合形成。\n\n[0042]在本申请实施例中，所述绿光量子点层42包括绿光量子点，所述红光量子点层41包括红光量子点；所述红光量子点材料和所述绿光量子点材料由量子点溶液、量子点粉末或量子点-聚合物粉末中的一种混合形成。\n\n[0043]请参阅图2所示，本发明还提供一种上述柔性彩色滤光膜10的制作方法，其包括以下步骤S1-S4。\n\n[0044]S1、制作聚合物树脂基底1步骤，在一基板上沉积液态聚合物树脂，经热固化或紫外固化后形成聚合物树脂基底1，通过纳米压印或刻蚀所述聚合物树脂基底1的方式形成多个间隔设置的容置凹槽，相邻的三个所述容置凹槽分别为红光凹槽11、绿光凹槽12以及蓝光凹槽13。形成的聚合物树脂基底1如图3所示，其中的基板优选为玻璃基板。\n\n[0045]S2、制作反射层2步骤，在所述红光凹槽11以及所述绿光凹槽12的槽底制作反射层2。\n\n[0046]S3、制作光扩散层3步骤，在每一所述容置凹槽11、12、13的内侧壁上涂覆光扩散粉与基质胶混合物并热固化的方式制作光扩散层3。\n\n[0047]S4、制作量子点层4步骤，在所述光扩散层3上方通过喷墨打印或雾化喷涂方式分别在所述绿光凹槽12、所述红光凹槽11填充绿光量子点材料、红光量子点材料，通过固化得到量子点层4。形成的柔性彩色滤光膜10如图1所示。\n\n[0048]在本申请实施例中，所述聚合物树脂基底1通过聚二甲基硅氧烷、硅胶或树脂类中的一种材料固化形成。所述聚合物树脂基底1能透光且具有柔性，便于弯折。\n\n[0049]在本申请实施例中，所述容置凹槽11、12、13通过对所述聚合物树脂基底1进行纳米压印或刻蚀形成。\n\n[0050]在本申请实施例中，所述反射层2包括分布式布拉格反射镜(DBR)。通过镀膜沉积形成所述反射层2，可抑制单色蓝光微发光二极管蓝光的出射。所述反射层2对蓝光反射率高，透过率低；所述反射层2对红光、绿光反射率低，透射率高。\n\n[0051]在本申请实施例中，设于所述绿光凹槽12的所述反射层2的厚度及材质与设于所述红光凹槽11的述反射层2的厚度及材质不同。\n\n[0052]在本申请实施例中，所述光扩散层3由光扩散粉与基质胶混合固化形成。\n\n[0053]在本申请实施例中，所述光扩散粉在所述光扩散层3中的重量比重为5％-20％。\n\n[0054]在本申请实施例中，所述光扩散粉材料包括有机材料及无机材料，所述有机材料包括亚克力(PMMA)、聚苯乙烯(PS)、有机硅微球、硅微球中的一种或多种，所述无机材料包括纳米氧化铝、纳米银、纳米金中的一种或多种；所述基质胶由丙烯酸酯胶、聚氨酯胶、环氧胶中的一种或多种材料混合形成。\n\n[0055]在本申请实施例中，所述绿光量子点层42包括绿光量子点，所述红光量子点层41包括红光量子点；所述红光量子点材料和所述绿光量子点材料由量子点溶液、量子点粉末或量子点-聚合物粉末中的一种混合形成。\n\n[0056]在本申请实施例方法制作形成的柔性彩色滤光膜10在使用时，一蓝色光源22发出的蓝光从所述容置凹槽11、12、13的槽口入射，蓝光在所述蓝光凹槽13位置直接穿过，蓝光在所述红光凹槽11、所述绿光凹槽12穿过所述红光量子点层41、所述绿光量子点层42至所述反射层2，蓝光在所述反射层2经过折射、反射再次回到所述量子点层4，所述量子点层4吸收蓝光发出荧光，部分发向四周的荧光被所述光扩散层3散射，用于增强对蓝光的吸收从而提高蓝光利用率和所述量子点层4的出光率。\n\n[0057]如图4所示，本发明还提供一种全彩微发光二极管器件100，其包括上述柔性彩色滤光膜10。\n\n[0058]在本申请实施例中，所述全彩微发光二极管器件100还包括与所述柔性彩色滤光膜10设有所述容置凹槽11、12、13一侧相贴合的蓝光背板20，所述蓝光背板20为在灯板21上设有多个间隔设置的蓝色光源22，所述蓝色光源22分别与所述容置凹槽11、12、13对应设置，所述蓝色光源22分别卡设于所述容置凹槽11、12、13的槽口位置。\n\n[0059]在使用时，如图4所示，一蓝色光源22发出的蓝光从所述容置凹槽11、12、13的槽口入射，蓝光在所述蓝光凹槽13位置直接穿过，蓝光在所述绿光凹槽12穿过所述绿光量子点层42至所述反射层2，蓝光在所述反射层2经过折射、反射再次回到所述量子点层4，所述量子点层4吸收蓝光发出荧光，部分发向四周的荧光被所述光扩散层散射，用于增强对蓝光的吸收从而提高蓝光利用率和所述量子点层4的出光率。\n\n[0060]本申请实施例将所述量子点层4置于发出单一短波长的蓝色光源22上，所述蓝色光源22为蓝光微发光二极管阵列，所述蓝色光源22优选为蓝光微发光二极管芯片，从而将所述蓝色光源22发出的蓝光转换为红绿蓝(RGB)三色，实现全彩化显示。优选所述量子点层4的厚度为450nm，实现了量子点层4对蓝光的吸光度不低于2，从而保证蓝光充分被量子点吸收不低于99％。这样既能保证蓝光的充分利用，提高能量利用率，也能保证显示器的色域、色纯度足够高，从而实现高品质画面。\n\n[0061]本发明的有益效果在于，提供一种柔性彩色滤光膜及其制作方法、全彩微发光二极管器件，通过设置反射层以及光扩散层用于增强量子点层对蓝光的吸收，从而提高蓝光利用率和所述量子点层的出光率。并将量子点层置于单一短波长的微发光二极管(Micro-LED)阵列上，从而将芯片发出的光转换为红绿蓝(RGB)三色，实现全彩化显示。实现了量子点层对蓝光的吸光度不低于2，从而保证蓝光充分被量子点吸收不低于99％。这样既能保证蓝光的充分利用，提高能量利用率，也能保证显示器的色域、色纯度足够高，从而实现高品质画面。\n\n[0062]以上对本申请实施例所提供的一种柔性彩色滤光膜及其制作方法、全彩微发光二极管器件进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及移动通信技术领域，尤其涉及移动设备技术领域，具体涉及一种柔性彩色滤光膜及其制作方法、全彩微发光二极管器件。\n\n背景技术\n\n[0002]量子点显示技术在色域覆盖率、色彩控制精确性、红绿蓝色彩纯净度等各个维度都对现有的显示技术进行了全面升级，被视为全球显示技术的制高点，也被视为影响全球的显示技术革命。\n\n[0003]但是其仍存在很多技术难点，比如全彩化技术。全彩化解决方案分为两大类，一种是红绿蓝(RGB)三基色芯片直接发光，一种是单色芯片配合色彩转换层。虽然前者技术目前相对成熟，但工艺上还比较困难，此方案还需涉及到更难的芯片巨量转移问题，因此现在比较被看好的全彩化技术当属后者。\n\n[0004]但是目前的单色芯片配合色彩转换层技术的量子点出光率很低。\n\n发明内容\n\n[0005]本发明提供一种柔性彩色滤光膜及其制作方法、全彩微发光二极管器件，可以解决单色芯片配合色彩转换层技术的量子点出光率很低的技术问题。\n\n[0006]本发明提供一种柔性彩色滤光膜，包括聚合物树脂基底、反射层、光扩散层以及量子点层；所述聚合物树脂基底设有多个间隔设置的容置凹槽；相邻的三个所述容置凹槽分别为红光凹槽、绿光凹槽以及蓝光凹槽；所述反射层设于所述红光凹槽以及所述绿光凹槽的槽底；所述光扩散层设于每一所述容置凹槽的内侧壁上；所述量子点层包括绿光量子点层以及红光量子点层，所述绿光量子点层设于所述绿光凹槽内的所述反射层上，所述红光量子点层设于所述红光凹槽内的所述反射层上。\n\n[0007]在使用时，一蓝色光源发出的蓝光从所述容置凹槽的槽口入射，蓝光在所述蓝光凹槽位置直接穿过，蓝光在所述绿光凹槽穿过所述绿光量子点层至所述反射层，蓝光在所述反射层经过折射、反射再次回到所述量子点层，所述量子点层吸收蓝光发出荧光，部分发向四周的荧光被所述光扩散层散射，用于增强对蓝光的吸收从而提高蓝光利用率和所述量子点层的出光率。\n\n[0008]进一步地，所述聚合物树脂基底通过聚二甲基硅氧烷、硅胶或树脂类中的一种材料固化形成。\n\n[0009]进一步地，所述容置凹槽通过对所述聚合物树脂基底进行纳米压印或刻蚀形成。\n\n[0010]进一步地，所述反射层包括分布式布拉格反射镜。\n\n[0011]进一步地，设于所述绿光凹槽的所述反射层的厚度及材质与设于所述红光凹槽的述反射层的厚度及材质不同。\n\n[0012]进一步地，所述光扩散层由光扩散粉与基质胶混合固化形成。\n\n[0013]进一步地，所述光扩散粉在所述光扩散层中的重量比重为5％-20％。\n\n[0014]进一步地，所述光扩散粉材料包括有机材料及无机材料，所述有机材料包括亚克力(PMMA)、聚苯乙烯(PS)、有机硅微球、硅微球中的一种或多种，所述无机材料包括纳米氧化铝、纳米银、纳米金中的一种或多种；所述基质胶由丙烯酸酯胶、聚氨酯胶、环氧胶中的一种或多种材料混合形成。\n\n[0015]进一步地，所述绿光量子点层包括绿光量子点，所述红光量子点层包括红光量子点；所述红光量子点材料和所述绿光量子点材料由量子点溶液、量子点粉末或量子点-聚合物粉末中的一种混合形成。\n\n[0016]本发明还提供一种上述柔性彩色滤光膜的制作方法，其包括以下步骤：\n\n[0017]在一基板上沉积液态聚合物树脂，经热固化或紫外固化后形成聚合物树脂基底，通过纳米压印或刻蚀所述聚合物树脂基底的方式形成多个间隔设置的容置凹槽，相邻的三个所述容置凹槽分别为红光凹槽、绿光凹槽以及蓝光凹槽；\n\n[0018]在所述红光凹槽以及所述绿光凹槽的槽底制作反射层；\n\n[0019]在每一所述容置凹槽的内侧壁上涂覆光扩散粉与基质胶混合物并热固化的方式制作光扩散层；以及\n\n[0020]在所述光扩散层上方通过喷墨打印或雾化喷涂方式分别在所述绿光凹槽、所述红光凹槽填充绿光量子点材料、红光量子点材料，通过固化得到量子点层。\n\n[0021]本发明还提供一种全彩微发光二极管器件，其包括上述柔性彩色滤光膜。\n\n[0022]进一步地，所述全彩微发光二极管器件还包括与所述柔性彩色滤光膜设有所述容置凹槽一侧相贴合的蓝光背板，所述蓝光背板上设有多个间隔设置的蓝色光源，所述蓝色光源分别与所述容置凹槽对应设置，所述蓝色光源分别卡设于所述容置凹槽的槽口位置。所述蓝色光源优选为蓝光微发光二极管芯片。\n\n[0023]本发明的有益效果在于，提供一种柔性彩色滤光膜及其制作方法、全彩微发光二极管器件，通过设置反射层以及光扩散层用于增强量子点层对蓝光的吸收，从而提高蓝光利用率和所述量子点层的出光率。并将量子点层置于单一短波长的微发光二极管(Micro-LED)阵列上，从而将芯片发出的光转换为红绿蓝(RGB)三色，实现全彩化显示。实现了量子点层对蓝光的吸光度不低于2，从而保证蓝光充分被量子点吸收不低于99％。这样既能保证蓝光的充分利用，提高能量利用率，也能保证显示器的色域、色纯度足够高，从而实现高品质画面。\n\n附图说明\n\n[0024]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0025]图1为本申请实施例提供的柔性彩色滤光膜的结构示意图。\n\n[0026]图2为本申请实施例提供的柔性彩色滤光膜的制作方法的流程图。\n\n[0027]图3为本申请实施例中形成的聚合物树脂基底的结构示意图。\n\n[0028]图4为本申请实施例提供的全彩微发光二极管器件的结构示意图。\n\n具体实施方式\n\n[0029]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0030]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0031]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0032]具体的，请参阅图1、图3所示，本申请实施例提供一种柔性彩色滤光膜10，包括聚合物树脂基底1、反射层2、光扩散层3以及量子点层4；所述聚合物树脂基底1设有多个间隔设置的容置凹槽；相邻的三个所述容置凹槽分别为红光凹槽11、绿光凹槽12以及蓝光凹槽13；所述反射层2设于所述绿光凹槽12以及红光凹槽11的槽底；所述光扩散层3设于每一所述容置凹槽11、12、13的内侧壁上；所述量子点层4包括红光量子点层41以及绿光量子点层42，所述红光量子点层41设于所述红光凹槽11内的所述反射层2上，所述绿光量子点层42设于所述绿光凹槽12内的所述反射层2上。\n\n[0033]在使用时，如图4所示，一蓝色光源22发出的蓝光从所述容置凹槽11、12、13的槽口入射，蓝光在所述蓝光凹槽13位置直接穿过，蓝光在所述红光凹槽11、所述绿光凹槽12穿过所述红光量子点层41、所述绿光量子点层42至所述反射层2，蓝光在所述反射层2经过折射、反射再次回到所述量子点层4，所述量子点层4吸收蓝光发出荧光，部分发向四周的荧光被所述光扩散层散射，用于增强对蓝光的吸收从而提高蓝光利用率和所述量子点层4的出光率。\n\n[0034]本申请实施例将所述量子点层4置于发出单一短波长的蓝色光源22上，所述蓝色光源22为蓝光微发光二极管阵列，所述蓝色光源22优选为蓝光微发光二极管芯片，从而将所述蓝色光源22发出的蓝光转换为红绿蓝(RGB)三色，实现全彩化显示。优选所述量子点层4的厚度为450nm，实现了量子点层4对蓝光的吸光度不低于2，从而保证蓝光充分被量子点吸收不低于99％。这样既能保证蓝光的充分利用，提高能量利用率，也能保证显示器的色域、色纯度足够高，从而实现高品质画面。\n\n[0035]在本申请实施例中，所述聚合物树脂基底1通过聚二甲基硅氧烷、硅胶或树脂类中的一种材料固化形成。所述聚合物树脂基底1能透光且具有柔性，便于弯折。\n\n[0036]在本申请实施例中，所述容置凹槽11、12、13通过对所述聚合物树脂基底1进行纳米压印或刻蚀形成。\n\n[0037]在本申请实施例中，所述反射层2包括分布式布拉格反射镜(DBR)。通过镀膜沉积形成所述反射层2，可抑制单色蓝光微发光二极管蓝光的出射。所述反射层2对蓝光反射率高，透过率低；所述反射层2对红光、绿光反射率低，透射率高。\n\n[0038]在本申请实施例中，设于所述绿光凹槽12的所述反射层2的厚度及材质与设于所述红光凹槽11的述反射层2的厚度及材质不同。\n\n[0039]在本申请实施例中，所述光扩散层3由光扩散粉与基质胶混合固化形成。\n\n[0040]在本申请实施例中，所述光扩散粉在所述光扩散层3中的重量比重为5％-20％。\n\n[0041]在本申请实施例中，所述光扩散粉材料包括有机材料及无机材料，所述有机材料包括亚克力(PMMA)、聚苯乙烯(PS)、有机硅微球、硅微球中的一种或多种，所述无机材料包括纳米氧化铝、纳米银、纳米金中的一种或多种；所述基质胶由丙烯酸酯胶、聚氨酯胶、环氧胶中的一种或多种材料混合形成。\n\n[0042]在本申请实施例中，所述绿光量子点层42包括绿光量子点，所述红光量子点层41包括红光量子点；所述红光量子点材料和所述绿光量子点材料由量子点溶液、量子点粉末或量子点-聚合物粉末中的一种混合形成。\n\n[0043]请参阅图2所示，本发明还提供一种上述柔性彩色滤光膜10的制作方法，其包括以下步骤S1-S4。\n\n[0044]S1、制作聚合物树脂基底1步骤，在一基板上沉积液态聚合物树脂，经热固化或紫外固化后形成聚合物树脂基底1，通过纳米压印或刻蚀所述聚合物树脂基底1的方式形成多个间隔设置的容置凹槽，相邻的三个所述容置凹槽分别为红光凹槽11、绿光凹槽12以及蓝光凹槽13。形成的聚合物树脂基底1如图3所示，其中的基板优选为玻璃基板。\n\n[0045]S2、制作反射层2步骤，在所述红光凹槽11以及所述绿光凹槽12的槽底制作反射层2。\n\n[0046]S3、制作光扩散层3步骤，在每一所述容置凹槽11、12、13的内侧壁上涂覆光扩散粉与基质胶混合物并热固化的方式制作光扩散层3。\n\n[0047]S4、制作量子点层4步骤，在所述光扩散层3上方通过喷墨打印或雾化喷涂方式分别在所述绿光凹槽12、所述红光凹槽11填充绿光量子点材料、红光量子点材料，通过固化得到量子点层4。形成的柔性彩色滤光膜10如图1所示。\n\n[0048]在本申请实施例中，所述聚合物树脂基底1通过聚二甲基硅氧烷、硅胶或树脂类中的一种材料固化形成。所述聚合物树脂基底1能透光且具有柔性，便于弯折。\n\n[0049]在本申请实施例中，所述容置凹槽11、12、13通过对所述聚合物树脂基底1进行纳米压印或刻蚀形成。\n\n[0050]在本申请实施例中，所述反射层2包括分布式布拉格反射镜(DBR)。通过镀膜沉积形成所述反射层2，可抑制单色蓝光微发光二极管蓝光的出射。所述反射层2对蓝光反射率高，透过率低；所述反射层2对红光、绿光反射率低，透射率高。\n\n[0051]在本申请实施例中，设于所述绿光凹槽12的所述反射层2的厚度及材质与设于所述红光凹槽11的述反射层2的厚度及材质不同。\n\n[0052]在本申请实施例中，所述光扩散层3由光扩散粉与基质胶混合固化形成。\n\n[0053]在本申请实施例中，所述光扩散粉在所述光扩散层3中的重量比重为5％-20％。\n\n[0054]在本申请实施例中，所述光扩散粉材料包括有机材料及无机材料，所述有机材料包括亚克力(PMMA)、聚苯乙烯(PS)、有机硅微球、硅微球中的一种或多种，所述无机材料包括纳米氧化铝、纳米银、纳米金中的一种或多种；所述基质胶由丙烯酸酯胶、聚氨酯胶、环氧胶中的一种或多种材料混合形成。\n\n[0055]在本申请实施例中，所述绿光量子点层42包括绿光量子点，所述红光量子点层41包括红光量子点；所述红光量子点材料和所述绿光量子点材料由量子点溶液、量子点粉末或量子点-聚合物粉末中的一种混合形成。\n\n[0056]在本申请实施例方法制作形成的柔性彩色滤光膜10在使用时，一蓝色光源22发出的蓝光从所述容置凹槽11、12、13的槽口入射，蓝光在所述蓝光凹槽13位置直接穿过，蓝光在所述红光凹槽11、所述绿光凹槽12穿过所述红光量子点层41、所述绿光量子点层42至所述反射层2，蓝光在所述反射层2经过折射、反射再次回到所述量子点层4，所述量子点层4吸收蓝光发出荧光，部分发向四周的荧光被所述光扩散层3散射，用于增强对蓝光的吸收从而提高蓝光利用率和所述量子点层4的出光率。\n\n[0057]如图4所示，本发明还提供一种全彩微发光二极管器件100，其包括上述柔性彩色滤光膜10。\n\n[0058]在本申请实施例中，所述全彩微发光二极管器件100还包括与所述柔性彩色滤光膜10设有所述容置凹槽11、12、13一侧相贴合的蓝光背板20，所述蓝光背板20为在灯板21上设有多个间隔设置的蓝色光源22，所述蓝色光源22分别与所述容置凹槽11、12、13对应设置，所述蓝色光源22分别卡设于所述容置凹槽11、12、13的槽口位置。\n\n[0059]在使用时，如图4所示，一蓝色光源22发出的蓝光从所述容置凹槽11、12、13的槽口入射，蓝光在所述蓝光凹槽13位置直接穿过，蓝光在所述绿光凹槽12穿过所述绿光量子点层42至所述反射层2，蓝光在所述反射层2经过折射、反射再次回到所述量子点层4，所述量子点层4吸收蓝光发出荧光，部分发向四周的荧光被所述光扩散层散射，用于增强对蓝光的吸收从而提高蓝光利用率和所述量子点层4的出光率。\n\n[0060]本申请实施例将所述量子点层4置于发出单一短波长的蓝色光源22上，所述蓝色光源22为蓝光微发光二极管阵列，所述蓝色光源22优选为蓝光微发光二极管芯片，从而将所述蓝色光源22发出的蓝光转换为红绿蓝(RGB)三色，实现全彩化显示。优选所述量子点层4的厚度为450nm，实现了量子点层4对蓝光的吸光度不低于2，从而保证蓝光充分被量子点吸收不低于99％。这样既能保证蓝光的充分利用，提高能量利用率，也能保证显示器的色域、色纯度足够高，从而实现高品质画面。\n\n[0061]本发明的有益效果在于，提供一种柔性彩色滤光膜及其制作方法、全彩微发光二极管器件，通过设置反射层以及光扩散层用于增强量子点层对蓝光的吸收，从而提高蓝光利用率和所述量子点层的出光率。并将量子点层置于单一短波长的微发光二极管(Micro-LED)阵列上，从而将芯片发出的光转换为红绿蓝(RGB)三色，实现全彩化显示。实现了量子点层对蓝光的吸光度不低于2，从而保证蓝光充分被量子点吸收不低于99％。这样既能保证蓝光的充分利用，提高能量利用率，也能保证显示器的色域、色纯度足够高，从而实现高品质画面。\n\n[0062]以上对本申请实施例所提供的一种柔性彩色滤光膜及其制作方法、全彩微发光二极管器件进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10796, 23850, '技术领域\n\n[0001]本申请涉及显示技术领域，更具体地说，涉及一种显示面板Mura补偿方法、装置及显示面板、显示装置。\n\n背景技术\n\n[0002]目前，显示面板由于工艺制造等原因，使得显示面板在生产过程中经常会出现Mura(亮度不均匀)现象，从而影响了显示面板的品质。因此，急需对显示面板亮度不均匀处的灰阶进行补偿，以消除Mura现象。其中，对灰阶进行补偿的数据称为Mura补偿数据。\n\n[0003]传统的显示面板Mura补偿中，只有某些灰阶才具有对应的Mura补偿数据，例如，只有灰阶10、灰阶30、灰阶50对应的Mura补偿数据，若需对灰阶32进行Mura补偿，则会选取与其最接近的灰阶30对应的Mura补偿数据对灰阶32进行补偿。然而这样补偿的精度不高，仍然无法消除Mura现象。\n\n[0004]在实现过程中，发明人发现传统技术中至少存在如下问题：传统显示面板Mura补偿中，补偿的精度不高，仍然无法消除Mura。\n\n发明内容\n\n[0005]基于此，有必要针对传统显示面板Mura补偿中，补偿的精度不高，仍然无法消除Mura的问题，提供一种显示面板Mura补偿方法、装置及显示面板、显示装置。\n\n[0006]为了实现上述目的，本发明实施例提供了一种显示面板Mura补偿方法，包括以下步骤：\n\n[0007]获取并处理显示面板中各个预设灰阶对应的Mura补偿数据，得到各个中间灰阶对应的Mura补偿数据；中间灰阶的数值为相邻两个预设灰阶数值的平均值；\n\n[0008]在各预设灰阶和各中间灰阶中，获取与待补偿灰阶最接近的两个灰阶，确定为第一比对灰阶和第二比对灰阶；\n\n[0009]将对应第一比对灰阶的Mura补偿数据和对应第二比对灰阶的Mura补偿数据进行线性插值处理，得到对应待补偿灰阶的Mura补偿数据；\n\n[0010]根据对应待补充灰阶的Mura补偿数据，对显示面板进行Mura补偿。\n\n[0011]在其中一个实施例中，获取并处理显示面板中各个预设灰阶对应的Mura补偿数据，得到各个中间灰阶对应的Mura补偿数据的步骤之前包括：\n\n[0012]获取显示面板的当前图像，并根据当前图像确定待补偿灰阶。\n\n[0013]在其中一个实施例中，获取并处理显示面板中各个预设灰阶对应的Mura补偿数据，得到各个中间灰阶对应的Mura补偿数据的步骤包括：\n\n[0014]获取显示面板中各个预设灰阶对应的Mura补偿数据；\n\n[0015]分别对相邻两个对应预设灰阶的Mura补偿数据进行线性插值处理，得到各个中间灰阶对应的Mura补偿数据。\n\n[0016]在其中一个实施例中，还包括步骤：\n\n[0017]在各预设灰阶中，获取与待补偿灰阶最接近的两个灰阶，确定为第一参考灰阶和第二参考灰阶；\n\n[0018]处理对应第一参考灰阶的Mura补偿数据和对应第二参考灰阶的Mura补偿数据，得到中间参考灰阶对应的Mura补偿数据；中间参考灰阶的数值为第一参考灰阶和第二参考灰阶数值的平均值；\n\n[0019]在第一参考灰阶、第二参考灰阶和中间参考灰阶中，选取与待补偿灰阶最接近的两个灰阶，确定为第一比对灰阶和第二比对灰阶。\n\n[0020]在其中一个实施例中，处理对应第一参考灰阶的Mura补偿数据和对应第二参考灰阶的Mura补偿数据，得到中间参考灰阶对应的Mura补偿数据的步骤包括：\n\n[0021]将对应第一参考灰阶的Mura补偿数据和对应第二参考灰阶的Mura补偿数据进行样条插值处理，得到中间参考灰阶对应的Mura补偿数据。\n\n[0022]在其中一个实施例中，获取并处理显示面板中各个预设灰阶对应的Mura补偿数据，得到各个中间灰阶对应的Mura补偿数据的步骤之后还包括：\n\n[0023]存储各中间灰阶对应的Mura补偿数据。\n\n[0024]另一方面，本发明实施例还提供了一种显示面板Mura补偿装置，包括：\n\n[0025]中间灰阶获取单元，用于获取并处理显示面板中各个预设灰阶对应的Mura补偿数据，得到各个中间灰阶对应的Mura补偿数据；中间灰阶的数值为相邻两个预设灰阶数值的平均值；\n\n[0026]比对灰阶获取单元，用于在各预设灰阶和各中间灰阶中，获取与待补偿灰阶最接近的两个灰阶，确定为第一比对灰阶和第二比对灰阶；\n\n[0027]补充灰阶处理单元，用于将对应第一比对灰阶的Mura补偿数据和对应第二比对灰阶的Mura补偿数据进行线性插值处理，得到对应待补偿灰阶的Mura补偿数据；\n\n[0028]Mura补偿单元，用于根据对应待补充灰阶的Mura补偿数据，对显示面板进行Mura补偿。\n\n[0029]另一方面，本发明实施例还提供了一种显示面板，包括处理设备以及连接处理设备的发光设备；\n\n[0030]处理设备用于执行如上述任一项的显示面板Mura补偿方法的步骤。\n\n[0031]另一方面，本发明实施例还提供了一种显示装置，包括如上述的显示面板。\n\n[0032]在其中一个实施例中，显示面板为OLED显示面板，Micro LED显示面板，Mini LED显示面板或μLED显示面板。\n\n[0033]上述技术方案中的一个技术方案具有如下优点和有益效果：\n\n[0034]上述的显示面板Mura补偿方法的各实施例中，获取并处理显示面板中各个预设灰阶对应的Mura补偿数据，得到各个中间灰阶对应的Mura补偿数据；中间灰阶的数值为相邻两个预设灰阶数值的平均值；在各预设灰阶和各中间灰阶中，获取与待补偿灰阶最接近的两个灰阶，确定为第一比对灰阶和第二比对灰阶；将对应第一比对灰阶的Mura补偿数据和对应第二比对灰阶的Mura补偿数据进行线性插值处理，得到对应待补偿灰阶的Mura补偿数据；根据对应待补充灰阶的Mura补偿数据，对显示面板进行Mura补偿，进而实现对显示面板中需待补偿的灰阶进行补偿消除Mura现象。本申请能够通过有限的预设灰阶的Mura补偿数据，通过数据处理，内建多个中间灰阶的Mura补偿数据，从而可以改善显示面板Mura现象，从而提高Mura补偿精度，增强显示面板品质。\n\n附图说明\n\n[0035]下面将结合附图及实施例对本申请作进一步说明，附图中：\n\n[0036]图1为一个实施例中显示面板Mura补偿方法的应用环境示意图；\n\n[0037]图2为一个实施例中显示面板的灰阶示意图；\n\n[0038]图3为一个实施例中显示面板Mura补偿方法的第一流程示意图；\n\n[0039]图4为一个实施例中显示面板Mura补偿方法的第二流程示意图；\n\n[0040]图5为一个实施例中显示面板Mura补偿方法的第三流程示意图；\n\n[0041]图6为一个实施例中显示面板Mura补偿方法的第四流程示意图；\n\n[0042]图7为一个实施例中显示面板Mura补偿装置的方框示意图；\n\n[0043]图8为一个实施例中显示面板的结构示意图。\n\n具体实施方式\n\n[0044]为了便于理解本申请，下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的首选实施例。但是，本申请可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本申请的公开内容更加透彻全面。\n\n[0045]除非另有定义，本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本申请。本文所使用的术语“及/或”包括一个或多个相关的所列项目的任意的和所有的组合。\n\n[0046]本申请提供的显示面板Mura补偿方法，可以应用于如图1所示的应用环境中。其中，显示面板可包括处理设备110和发光设备120。处理设备110与发光设备120连接，其中，处理设备110可包括处理芯片；处理芯片可以但不限于是单片机、DSP(Digital SignalProcessing，数字信号处理)处理器和ARM(Advanced RISC Machines)处理器。发光设备120可以但不限于是LCD发光设备和LED发光设备。\n\n[0047]在一个示例中，如图2所示，显示面板的当前图像可包括256个灰阶(gray0至gray255)。显示面板中可包括3个预设灰阶对应的Mura补偿数据(panle_0、panle_1、panle_2和panle_3)。待补偿灰阶位于panle_1灰阶和panle_2灰阶之间。\n\n[0048]在一个实施例中，如图3所示，提供了一种显示面板Mura补偿方法，以该方法应用于图1中的处理设备为例进行说明，该方法包括以下步骤：\n\n[0049]步骤S310，获取并处理显示面板中各个预设灰阶对应的Mura补偿数据，得到各个中间灰阶对应的Mura补偿数据；中间灰阶的数值为相邻两个预设灰阶数值的平均值。\n\n[0050]其中，显示面板可以但不限于是LCD显示面板或LED显示面板。Mura(亮度不均匀)补偿数据指的是对灰阶进行补偿的数据。中间灰阶指的是相邻2个预设灰阶之间的中间值。例如，相邻2个预设灰阶为灰阶30和灰阶50，则中间灰阶为灰阶40。\n\n[0051]具体地，处理设备可获取显示面板中各个预设灰阶对应的Mura补偿数据，并对获取到的各个预设灰阶对应的Mura补偿数据进行处理，进而可得到各个中间灰阶对应的Mura补偿数据。\n\n[0052]在一个示例中，基于显示面板显示的当前图像，具有3个预设灰阶(分别为灰阶10、灰阶30和灰阶50)。处理设备可获取灰阶10对应的Mura补偿数据、灰阶30对应的Mura补偿数据和灰阶50对应的Mura补偿数据。处理设备可对灰阶10对应的Mura补偿数据和灰阶30对应的Mura补偿数据进行处理，进而可得到灰阶20对应的Mura补偿数据。处理设备还可对灰阶30对应的Mura补偿数据和灰阶50对应的Mura补偿数据进行处理，进而可得到灰阶40对应的Mura补偿数据。其中灰阶20对应的Mura补偿数据和灰阶40对应的Mura补偿数据即为中间灰阶对应的Mura补偿数据。\n\n[0053]步骤S320，在各预设灰阶和各中间灰阶中，获取与待补偿灰阶最接近的两个灰阶，确定为第一比对灰阶和第二比对灰阶。\n\n[0054]其中，第一比对灰阶指的是与待补偿灰阶相比最接近的两个灰阶中的一个灰阶。第二比对灰阶指的是与待补偿灰阶相比最接近的两个灰阶中的另一个灰阶。\n\n[0055]具体地，处理设备可从处理得到的各个中间灰阶与各预设灰阶中，选取与待补偿灰阶最接近的两个灰阶，并将最接近的两个灰阶中的其中一个灰阶确定为第一比对灰阶，最接近的两个灰阶中的另一个灰阶确定为第二比对灰阶。\n\n[0056]步骤S330，将对应第一比对灰阶的Mura补偿数据和对应第二比对灰阶的Mura补偿数据进行线性插值处理，得到对应待补偿灰阶的Mura补偿数据。\n\n[0057]其中，待补偿灰阶指的是显示面板中存在Mura的需补充的灰阶。\n\n[0058]具体地，处理设备可基于线性插值算法，对对应第一比对灰阶的Mura补偿数据和对应第二比对灰阶的Mura补偿数据进行线性插值处理，进而可得到对应待补偿灰阶的Mura补偿数据。\n\n[0059]步骤S340，根据对应待补充灰阶的Mura补偿数据，对显示面板进行Mura补偿。\n\n[0060]具体地，处理设备可根据处理得到的对应待补充灰阶的Mura补偿数据，对显示面板进行Mura补偿，进而实现对需补偿的灰阶进行补偿，消除显示面板的Mura现象。\n\n[0061]上述的显示面板Mura补偿方法的实施例中，获取并处理显示面板中各个预设灰阶对应的Mura补偿数据，得到各个中间灰阶对应的Mura补偿数据；在各预设灰阶和各中间灰阶中，获取与待补偿灰阶最接近的两个灰阶，确定为第一比对灰阶和第二比对灰阶；将对应第一比对灰阶的Mura补偿数据和对应第二比对灰阶的Mura补偿数据进行线性插值处理，得到对应待补偿灰阶的Mura补偿数据；根据对应待补充灰阶的Mura补偿数据，对显示面板进行Mura补偿，进而实现对显示面板中需待补偿的灰阶进行补偿消除Mura现象。通过有限的预设灰阶的Mura补偿数据，通过数据处理，内建多个中间灰阶的Mura补偿数据，从而可以改善显示面板Mura现象，从而提高Mura补偿精度，增强显示面板品质。\n\n[0062]在一个实施例中，如图4所示，提供了一种显示面板Mura补偿方法，以该方法应用于图1中的处理设备为例进行说明，该方法包括以下步骤：\n\n[0063]步骤S410，获取显示面板的当前图像，并根据当前图像确定待补偿灰阶。\n\n[0064]具体地，基于显示面板显示的当前图像，处理设备可对获取显示面板的当前图像，并根据当前图像确定待补偿灰阶。\n\n[0065]在一个示例中，处理设备可获取显示面板的当前图像，根据当前图像的Mura情况，确定需要补偿的灰阶(例如灰阶32)。\n\n[0066]步骤S420，获取并处理显示面板中各个预设灰阶对应的Mura补偿数据，得到各个中间灰阶对应的Mura补偿数据；中间灰阶的数值为相邻两个预设灰阶数值的平均值。\n\n[0067]步骤S430，在各预设灰阶和各中间灰阶中，获取与待补偿灰阶最接近的两个灰阶，确定为第一比对灰阶和第二比对灰阶。\n\n[0068]步骤S440，将对应第一比对灰阶的Mura补偿数据和对应第二比对灰阶的Mura补偿数据进行线性插值处理，得到对应待补偿灰阶的Mura补偿数据。\n\n[0069]步骤S450，根据对应待补充灰阶的Mura补偿数据，对显示面板进行Mura补偿。\n\n[0070]其中，上述步骤S420、步骤S430、步骤S440和步骤S450的具体内容过程可参考上文内容，此处不再赘述。\n\n[0071]上述实施例中，获取显示面板的当前图像，并根据当前图像确定待补偿灰阶；获取并处理显示面板中各个预设灰阶对应的Mura补偿数据，进而得到各个中间灰阶对应的Mura补偿数据；在各预设灰阶和各中间灰阶中，获取与待补偿灰阶最接近的两个灰阶，确定为第一比对灰阶和第二比对灰阶；将对应第一比对灰阶的Mura补偿数据和对应第二比对灰阶的Mura补偿数据进行线性插值处理，得到对应待补偿灰阶的Mura补偿数据；根据对应待补充灰阶的Mura补偿数据，对显示面板进行Mura补偿，进而实现对显示面板中需待补偿的灰阶进行补偿消除Mura现象。通过有限的预设灰阶的Mura补偿数据，通过数据处理，内建多个中间灰阶的Mura补偿数据，从而可以改善显示面板Mura现象，从而提高Mura补偿精度，增强显示面板品质。\n\n[0072]在一个实施例中，如图5所示，提供了一种显示面板Mura补偿方法，以该方法应用于图1中的处理设备为例进行说明，该方法包括以下步骤：\n\n[0073]步骤S510，获取显示面板中各个预设灰阶对应的Mura补偿数据；\n\n[0074]具体地，基于显示面板显示的当前图像，进而处理设备可获取显示面板中各个预设灰阶对应的Mura补偿数据。\n\n[0075]在一个示例中，预设灰阶对应的Mura补偿数据可预先存储在寄存器中，进而处理设备可通过查找表方式查询寄存器，获取各个预设灰阶对应的Mura补偿数据。\n\n[0076]步骤S520，分别对相邻两个对应预设灰阶的Mura补偿数据进行线性插值处理，得到各个中间灰阶对应的Mura补偿数据。\n\n[0077]具体地，处理设备可基于线性插值算法，分别对相邻两个对应预设灰阶的Mura补偿数据进行线性插值处理，进而可得到各个中间灰阶对应的Mura补偿数据。\n\n[0078]例如，处理设备可对灰阶10对应的Mura补偿数据和灰阶30对应的Mura补偿数据进行线性插值处理，进而可得到灰阶20对应的Mura补偿数据。处理设备还可对灰阶30对应的Mura补偿数据和灰阶50对应的Mura补偿数据进行线性插值处理，进而可得到灰阶40对应的Mura补偿数据。\n\n[0079]步骤S530，在各预设灰阶和各中间灰阶中，获取与待补偿灰阶最接近的两个灰阶，确定为第一比对灰阶和第二比对灰阶。\n\n[0080]步骤S540，将对应第一比对灰阶的Mura补偿数据和对应第二比对灰阶的Mura补偿数据进行线性插值处理，得到对应待补偿灰阶的Mura补偿数据。\n\n[0081]步骤S550，根据对应待补充灰阶的Mura补偿数据，对显示面板进行Mura补偿。\n\n[0082]其中，上述步骤S530、步骤S540和步骤S550的具体内容过程可参考上文内容，此处不再赘述。\n\n[0083]上述实施例中，处理设备可获取显示面板中各个预设灰阶对应的Mura补偿数据；分别对相邻两个对应预设灰阶的Mura补偿数据进行线性插值处理，进而得到所有的中间灰阶对应的Mura补偿数据；在各预设灰阶和各中间灰阶中，获取与待补偿灰阶最接近的两个灰阶，确定为第一比对灰阶和第二比对灰阶；将对应第一比对灰阶的Mura补偿数据和对应第二比对灰阶的Mura补偿数据进行线性插值处理，得到对应待补偿灰阶的Mura补偿数据；根据对应待补充灰阶的Mura补偿数据，对显示面板进行Mura补偿，进而实现对显示面板中需待补偿的灰阶进行补偿消除Mura现象。通过有限的预设灰阶的Mura补偿数据，通过数据处理，内建多个中间灰阶的Mura补偿数据，从而可以改善显示面板Mura现象，从而提高Mura补偿精度，增强显示面板品质。\n\n[0084]在一个实施例中，如图6所示，提供了一种显示面板Mura补偿方法，以该方法应用于图1中的处理设备为例进行说明，该方法包括以下步骤：\n\n[0085]步骤S610，获取显示面板中各个预设灰阶对应的Mura补偿数据。\n\n[0086]步骤S620，在各预设灰阶中，获取与待补偿灰阶最接近的两个灰阶，确定为第一参考灰阶和第二参考灰阶；\n\n[0087]例如，预设灰阶包括灰阶10，灰阶30和灰阶50；待补偿灰阶为灰阶32。则与灰阶32最接近的2个灰阶为灰阶30和灰阶50，即第一参考灰阶为灰阶30，第二参考灰阶为灰阶50。\n\n[0088]需要说明的是，若第一参考灰阶为灰阶50，第二参考灰阶为灰阶30。\n\n[0089]步骤S630，处理对应第一参考灰阶的Mura补偿数据和对应第二参考灰阶的Mura补偿数据，得到中间参考灰阶对应的Mura补偿数据；中间参考灰阶的数值为第一参考灰阶和第二参考灰阶数值的平均值；\n\n[0090]具体地，处理设备通过确定第一参考灰阶和第二参考灰阶，进而获取对应第一参考灰阶的Mura补偿数据和对应第二参考灰阶的Mura补偿数据。处理设备处理对应第一参考灰阶的Mura补偿数据和对应第二参考灰阶的Mura补偿数据，进而得到中间参考灰阶对应的Mura补偿数据。\n\n[0091]例如，第一参考灰阶为灰阶30，第二参考灰阶为灰阶50，则中间参考灰阶为灰阶40。处理对应灰阶30的Mura补偿数据和对应灰阶50的Mura补偿数据，得到灰阶40对应的Mura补偿数据。\n\n[0092]步骤S640，在第一参考灰阶、第二参考灰阶和中间参考灰阶中，选取与待补偿灰阶最接近的两个灰阶，确定为第一比对灰阶和第二比对灰阶。\n\n[0093]例如，第一参考灰阶为灰阶30，第二参考灰阶为灰阶50，中间参考灰阶为灰阶40；待补偿灰阶为灰阶32。则选取与待补偿灰阶最接近的两个灰阶为灰阶30和灰阶40，即确定第一比对灰阶为灰阶30和第二比对灰阶为灰阶40。\n\n[0094]需要说明的是，若第一比对灰阶为灰阶40，第二比对灰阶为灰阶30。\n\n[0095]步骤S650，将对应第一比对灰阶的Mura补偿数据和对应第二比对灰阶的Mura补偿数据进行线性插值处理，得到对应待补偿灰阶的Mura补偿数据。\n\n[0096]步骤S660，根据对应待补充灰阶的Mura补偿数据，对显示面板进行Mura补偿。\n\n[0097]其中，上述步骤S610、步骤S650和步骤S660的具体内容过程可参考上文内容，此处不再赘述。\n\n[0098]上述实施例中，处理设备获取显示面板的当前图像，根据当前图像确定待补偿灰阶(例如灰阶32)；在多个预设灰阶(例如灰阶10、灰阶30和灰阶50)中，选取与待补偿灰阶(灰阶32)最接近的两个灰阶，即第一参考灰阶(灰阶30)和第二参考灰阶(灰阶50)；将第一参考灰阶对应的Mura补偿数据和第二参考灰阶对应的Mura补偿数据进行处理，进而得到中间参考灰阶(灰阶40)对应的Mura补偿数据；在第一参考灰阶(灰阶30)、第二参考灰阶(灰阶50)和中间参考灰阶(灰阶40)中，选取与待补偿灰阶(灰阶32)最接近的两个灰阶，确定为第一比对灰阶(灰阶30)和第二比对灰阶(灰阶40)，将第一比对灰阶(灰阶30)对应的Mura补偿数据与第二比对灰阶(灰阶40)对应的Mura补偿数据进行线性插值处理，进而得到待补偿灰阶(灰阶32)对应的Mura补偿数据，进而根据对应待补充灰阶的Mura补偿数据，对待补偿灰阶进行补偿，消除Mura现象。通过有限的预设灰阶的Mura补偿数据，通过数据处理，内建多个中间灰阶的Mura补偿数据，从而可以改善显示面板Mura现象，从而提高Mura补偿精度，增强显示面板品质。\n\n[0099]在一个实施例中，处理对应第一参考灰阶的Mura补偿数据和对应第二参考灰阶的Mura补偿数据，得到中间参考灰阶对应的Mura补偿数据的步骤包括：\n\n[0100]将对应第一参考灰阶的Mura补偿数据和对应第二参考灰阶的Mura补偿数据进行样条插值处理，得到中间参考灰阶对应的Mura补偿数据。\n\n[0101]其中，样条插值处理指的是每两个点之间确定一个函数，这个函数就是一个样条，函数不同，样条就不同。\n\n[0102]具体地，处理设备基于样条插值算法，对对应第一参考灰阶的Mura补偿数据和对应第二参考灰阶的Mura补偿数据进行样条插值处理，进而可得到中间参考灰阶对应的Mura补偿数据。\n\n[0103]在一个实施例中，获取并处理显示面板中各个预设灰阶对应的Mura补偿数据，得到各个中间灰阶对应的Mura补偿数据的步骤之后还包括：\n\n[0104]存储各中间灰阶对应的Mura补偿数据。\n\n[0105]具体地，处理设备可计算出所有的中间灰阶对应的Mura补偿数据，并将各中间灰阶对应的Mura补偿数据存储在TCON(寄存器)中。\n\n[0106]应该理解的是，虽然图3-6的流程图中的各个步骤按照箭头的指示依次显示，但是这些步骤并不是必然按照箭头指示的顺序依次执行。除非本文中有明确的说明，这些步骤的执行并没有严格的顺序限制，这些步骤可以以其它的顺序执行。而且，图3-6中的至少一部分步骤可以包括多个子步骤或者多个阶段，这些子步骤或者阶段并不必然是在同一时刻执行完成，而是可以在不同的时刻执行，这些子步骤或者阶段的执行顺序也不必然是依次进行，而是可以与其它步骤或者其它步骤的子步骤或者阶段的至少一部分轮流或者交替地执行。\n\n[0107]在一个实施例中，如图7所示，还提供了一种显示面板Mura补偿装置，该装置包括：\n\n[0108]中间灰阶获取单元710，用于获取并处理显示面板中各个预设灰阶对应的Mura补偿数据，得到各个中间灰阶对应的Mura补偿数据；中间灰阶的数值为相邻两个预设灰阶数值的平均值。\n\n[0109]比对灰阶获取单元720，用于在各预设灰阶和各中间灰阶中，获取与待补偿灰阶最接近的两个灰阶，确定为第一比对灰阶和第二比对灰阶。\n\n[0110]补充灰阶处理单元730，用于将对应第一比对灰阶的Mura补偿数据和对应第二比对灰阶的Mura补偿数据进行线性插值处理，得到对应待补偿灰阶的Mura补偿数据。\n\n[0111]Mura补偿单元740，用于根据对应待补充灰阶的Mura补偿数据，对显示面板进行Mura补偿。\n\n[0112]关于显示面板Mura补偿装置的具体限定可以参见上文中对于显示面板Mura补偿方法的限定，在此不再赘述。上述显示面板Mura补偿装置中的各个模块可全部或部分通过软件、硬件及其组合来实现。上述各模块可以硬件形式内嵌于或独立于显示面板Mura补偿系统中的处理器中，也可以以软件形式存储于显示面板Mura补偿系统中的存储器中，以便于处理器调用执行以上各个模块对应的操作。\n\n[0113]另一方面，如图8所示，还提供了一种显示面板，该显示面板包括处理设备810以及连接处理设备810的发光设备820；处理设备810用于执行如上述任一项的显示面板Mura补偿方法的步骤。\n\n[0114]其中，发光设备820可以但不限于是LCD发光设备或LED发光设备。处理设备810可以但不限于是单片机或DSP。\n\n[0115]具体地，处理设备810可用于执行以下步骤：\n\n[0116]获取并处理显示面板中各个预设灰阶对应的Mura补偿数据，得到各个中间灰阶对应的Mura补偿数据；中间灰阶的数值为相邻两个预设灰阶数值的平均值；\n\n[0117]在各预设灰阶和各中间灰阶中，获取与待补偿灰阶最接近的两个灰阶，确定为第一比对灰阶和第二比对灰阶；\n\n[0118]将对应第一比对灰阶的Mura补偿数据和对应第二比对灰阶的Mura补偿数据进行线性插值处理，得到对应待补偿灰阶的Mura补偿数据；\n\n[0119]根据对应待补充灰阶的Mura补偿数据，对显示面板进行Mura补偿。\n\n[0120]关于显示面板的具体限定可以参见上文中对于显示面板Mura补偿方法的限定，在此不再赘述。\n\n[0121]在一个实施例中，还提供了一种显示装置，该显示装置包括如上述的显示面板。\n\n[0122]在一个实施例中，显示面板为OLED显示面板，Micro LED显示面板，Mini LED显示面板或μLED显示面板。\n\n[0123]关于显示装置的具体限定可以参见上文中对于显示面板Mura补偿方法及显示面板的限定，在此不再赘述。\n\n[0124]本领域普通技术人员可以理解实现上述实施例方法中的全部或部分流程，是可以通过计算机程序来指令相关的硬件来完成，所述的计算机程序可存储于一非易失性计算机可读取存储介质中，该计算机程序在执行时，可包括如上述各除法运算方法的实施例的流程。其中，本申请所提供的各实施例中所使用的对存储器、存储、数据库或其它介质的任何引用，均可包括非易失性和/或易失性存储器。非易失性存储器可包括只读存储器(ROM)、可编程ROM(PROM)、电可编程ROM(EPROM)、电可擦除可编程ROM(EEPROM)或闪存。易失性存储器可包括随机存取存储器(RAM)或者外部高速缓冲存储器。作为说明而非局限，RAM以多种形式可得，诸如静态RAM(SRAM)、动态RAM(DRAM)、同步DRAM(SDRAM)、双数据率SDRAM(DDRSDRAM)、增强型SDRAM(ESDRAM)、同步链路(Synchlink)DRAM(SLDRAM)、存储器总线(Rambus)直接RAM(RDRAM)、直接存储器总线动态RAM(DRDRAM)、以及存储器总线动态RAM(RDRAM)等。\n\n[0125]以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。\n\n[0126]以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。', '技术领域\n\n[0001]本申请涉及显示技术领域，更具体地说，涉及一种显示面板Mura补偿方法、装置及显示面板、显示装置。\n\n背景技术\n\n[0002]目前，显示面板由于工艺制造等原因，使得显示面板在生产过程中经常会出现Mura(亮度不均匀)现象，从而影响了显示面板的品质。因此，急需对显示面板亮度不均匀处的灰阶进行补偿，以消除Mura现象。其中，对灰阶进行补偿的数据称为Mura补偿数据。\n\n[0003]传统的显示面板Mura补偿中，只有某些灰阶才具有对应的Mura补偿数据，例如，只有灰阶10、灰阶30、灰阶50对应的Mura补偿数据，若需对灰阶32进行Mura补偿，则会选取与其最接近的灰阶30对应的Mura补偿数据对灰阶32进行补偿。然而这样补偿的精度不高，仍然无法消除Mura现象。\n\n[0004]在实现过程中，发明人发现传统技术中至少存在如下问题：传统显示面板Mura补偿中，补偿的精度不高，仍然无法消除Mura。\n\n发明内容\n\n[0005]基于此，有必要针对传统显示面板Mura补偿中，补偿的精度不高，仍然无法消除Mura的问题，提供一种显示面板Mura补偿方法、装置及显示面板、显示装置。\n\n[0006]为了实现上述目的，本发明实施例提供了一种显示面板Mura补偿方法，包括以下步骤：\n\n[0007]获取并处理显示面板中各个预设灰阶对应的Mura补偿数据，得到各个中间灰阶对应的Mura补偿数据；中间灰阶的数值为相邻两个预设灰阶数值的平均值；\n\n[0008]在各预设灰阶和各中间灰阶中，获取与待补偿灰阶最接近的两个灰阶，确定为第一比对灰阶和第二比对灰阶；\n\n[0009]将对应第一比对灰阶的Mura补偿数据和对应第二比对灰阶的Mura补偿数据进行线性插值处理，得到对应待补偿灰阶的Mura补偿数据；\n\n[0010]根据对应待补充灰阶的Mura补偿数据，对显示面板进行Mura补偿。\n\n[0011]在其中一个实施例中，获取并处理显示面板中各个预设灰阶对应的Mura补偿数据，得到各个中间灰阶对应的Mura补偿数据的步骤之前包括：\n\n[0012]获取显示面板的当前图像，并根据当前图像确定待补偿灰阶。\n\n[0013]在其中一个实施例中，获取并处理显示面板中各个预设灰阶对应的Mura补偿数据，得到各个中间灰阶对应的Mura补偿数据的步骤包括：\n\n[0014]获取显示面板中各个预设灰阶对应的Mura补偿数据；\n\n[0015]分别对相邻两个对应预设灰阶的Mura补偿数据进行线性插值处理，得到各个中间灰阶对应的Mura补偿数据。\n\n[0016]在其中一个实施例中，还包括步骤：\n\n[0017]在各预设灰阶中，获取与待补偿灰阶最接近的两个灰阶，确定为第一参考灰阶和第二参考灰阶；\n\n[0018]处理对应第一参考灰阶的Mura补偿数据和对应第二参考灰阶的Mura补偿数据，得到中间参考灰阶对应的Mura补偿数据；中间参考灰阶的数值为第一参考灰阶和第二参考灰阶数值的平均值；\n\n[0019]在第一参考灰阶、第二参考灰阶和中间参考灰阶中，选取与待补偿灰阶最接近的两个灰阶，确定为第一比对灰阶和第二比对灰阶。\n\n[0020]在其中一个实施例中，处理对应第一参考灰阶的Mura补偿数据和对应第二参考灰阶的Mura补偿数据，得到中间参考灰阶对应的Mura补偿数据的步骤包括：\n\n[0021]将对应第一参考灰阶的Mura补偿数据和对应第二参考灰阶的Mura补偿数据进行样条插值处理，得到中间参考灰阶对应的Mura补偿数据。\n\n[0022]在其中一个实施例中，获取并处理显示面板中各个预设灰阶对应的Mura补偿数据，得到各个中间灰阶对应的Mura补偿数据的步骤之后还包括：\n\n[0023]存储各中间灰阶对应的Mura补偿数据。\n\n[0024]另一方面，本发明实施例还提供了一种显示面板Mura补偿装置，包括：\n\n[0025]中间灰阶获取单元，用于获取并处理显示面板中各个预设灰阶对应的Mura补偿数据，得到各个中间灰阶对应的Mura补偿数据；中间灰阶的数值为相邻两个预设灰阶数值的平均值；\n\n[0026]比对灰阶获取单元，用于在各预设灰阶和各中间灰阶中，获取与待补偿灰阶最接近的两个灰阶，确定为第一比对灰阶和第二比对灰阶；\n\n[0027]补充灰阶处理单元，用于将对应第一比对灰阶的Mura补偿数据和对应第二比对灰阶的Mura补偿数据进行线性插值处理，得到对应待补偿灰阶的Mura补偿数据；\n\n[0028]Mura补偿单元，用于根据对应待补充灰阶的Mura补偿数据，对显示面板进行Mura补偿。\n\n[0029]另一方面，本发明实施例还提供了一种显示面板，包括处理设备以及连接处理设备的发光设备；\n\n[0030]处理设备用于执行如上述任一项的显示面板Mura补偿方法的步骤。\n\n[0031]另一方面，本发明实施例还提供了一种显示装置，包括如上述的显示面板。\n\n[0032]在其中一个实施例中，显示面板为OLED显示面板，Micro LED显示面板，Mini LED显示面板或μLED显示面板。\n\n[0033]上述技术方案中的一个技术方案具有如下优点和有益效果：\n\n[0034]上述的显示面板Mura补偿方法的各实施例中，获取并处理显示面板中各个预设灰阶对应的Mura补偿数据，得到各个中间灰阶对应的Mura补偿数据；中间灰阶的数值为相邻两个预设灰阶数值的平均值；在各预设灰阶和各中间灰阶中，获取与待补偿灰阶最接近的两个灰阶，确定为第一比对灰阶和第二比对灰阶；将对应第一比对灰阶的Mura补偿数据和对应第二比对灰阶的Mura补偿数据进行线性插值处理，得到对应待补偿灰阶的Mura补偿数据；根据对应待补充灰阶的Mura补偿数据，对显示面板进行Mura补偿，进而实现对显示面板中需待补偿的灰阶进行补偿消除Mura现象。本申请能够通过有限的预设灰阶的Mura补偿数据，通过数据处理，内建多个中间灰阶的Mura补偿数据，从而可以改善显示面板Mura现象，从而提高Mura补偿精度，增强显示面板品质。\n\n附图说明\n\n[0035]下面将结合附图及实施例对本申请作进一步说明，附图中：\n\n[0036]图1为一个实施例中显示面板Mura补偿方法的应用环境示意图；\n\n[0037]图2为一个实施例中显示面板的灰阶示意图；\n\n[0038]图3为一个实施例中显示面板Mura补偿方法的第一流程示意图；\n\n[0039]图4为一个实施例中显示面板Mura补偿方法的第二流程示意图；\n\n[0040]图5为一个实施例中显示面板Mura补偿方法的第三流程示意图；\n\n[0041]图6为一个实施例中显示面板Mura补偿方法的第四流程示意图；\n\n[0042]图7为一个实施例中显示面板Mura补偿装置的方框示意图；\n\n[0043]图8为一个实施例中显示面板的结构示意图。\n\n具体实施方式\n\n[0044]为了便于理解本申请，下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的首选实施例。但是，本申请可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本申请的公开内容更加透彻全面。\n\n[0045]除非另有定义，本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本申请。本文所使用的术语“及/或”包括一个或多个相关的所列项目的任意的和所有的组合。\n\n[0046]本申请提供的显示面板Mura补偿方法，可以应用于如图1所示的应用环境中。其中，显示面板可包括处理设备110和发光设备120。处理设备110与发光设备120连接，其中，处理设备110可包括处理芯片；处理芯片可以但不限于是单片机、DSP(Digital SignalProcessing，数字信号处理)处理器和ARM(Advanced RISC Machines)处理器。发光设备120可以但不限于是LCD发光设备和LED发光设备。\n\n[0047]在一个示例中，如图2所示，显示面板的当前图像可包括256个灰阶(gray0至gray255)。显示面板中可包括3个预设灰阶对应的Mura补偿数据(panle_0、panle_1、panle_2和panle_3)。待补偿灰阶位于panle_1灰阶和panle_2灰阶之间。\n\n[0048]在一个实施例中，如图3所示，提供了一种显示面板Mura补偿方法，以该方法应用于图1中的处理设备为例进行说明，该方法包括以下步骤：\n\n[0049]步骤S310，获取并处理显示面板中各个预设灰阶对应的Mura补偿数据，得到各个中间灰阶对应的Mura补偿数据；中间灰阶的数值为相邻两个预设灰阶数值的平均值。\n\n[0050]其中，显示面板可以但不限于是LCD显示面板或LED显示面板。Mura(亮度不均匀)补偿数据指的是对灰阶进行补偿的数据。中间灰阶指的是相邻2个预设灰阶之间的中间值。例如，相邻2个预设灰阶为灰阶30和灰阶50，则中间灰阶为灰阶40。\n\n[0051]具体地，处理设备可获取显示面板中各个预设灰阶对应的Mura补偿数据，并对获取到的各个预设灰阶对应的Mura补偿数据进行处理，进而可得到各个中间灰阶对应的Mura补偿数据。\n\n[0052]在一个示例中，基于显示面板显示的当前图像，具有3个预设灰阶(分别为灰阶10、灰阶30和灰阶50)。处理设备可获取灰阶10对应的Mura补偿数据、灰阶30对应的Mura补偿数据和灰阶50对应的Mura补偿数据。处理设备可对灰阶10对应的Mura补偿数据和灰阶30对应的Mura补偿数据进行处理，进而可得到灰阶20对应的Mura补偿数据。处理设备还可对灰阶30对应的Mura补偿数据和灰阶50对应的Mura补偿数据进行处理，进而可得到灰阶40对应的Mura补偿数据。其中灰阶20对应的Mura补偿数据和灰阶40对应的Mura补偿数据即为中间灰阶对应的Mura补偿数据。\n\n[0053]步骤S320，在各预设灰阶和各中间灰阶中，获取与待补偿灰阶最接近的两个灰阶，确定为第一比对灰阶和第二比对灰阶。\n\n[0054]其中，第一比对灰阶指的是与待补偿灰阶相比最接近的两个灰阶中的一个灰阶。第二比对灰阶指的是与待补偿灰阶相比最接近的两个灰阶中的另一个灰阶。\n\n[0055]具体地，处理设备可从处理得到的各个中间灰阶与各预设灰阶中，选取与待补偿灰阶最接近的两个灰阶，并将最接近的两个灰阶中的其中一个灰阶确定为第一比对灰阶，最接近的两个灰阶中的另一个灰阶确定为第二比对灰阶。\n\n[0056]步骤S330，将对应第一比对灰阶的Mura补偿数据和对应第二比对灰阶的Mura补偿数据进行线性插值处理，得到对应待补偿灰阶的Mura补偿数据。\n\n[0057]其中，待补偿灰阶指的是显示面板中存在Mura的需补充的灰阶。\n\n[0058]具体地，处理设备可基于线性插值算法，对对应第一比对灰阶的Mura补偿数据和对应第二比对灰阶的Mura补偿数据进行线性插值处理，进而可得到对应待补偿灰阶的Mura补偿数据。\n\n[0059]步骤S340，根据对应待补充灰阶的Mura补偿数据，对显示面板进行Mura补偿。\n\n[0060]具体地，处理设备可根据处理得到的对应待补充灰阶的Mura补偿数据，对显示面板进行Mura补偿，进而实现对需补偿的灰阶进行补偿，消除显示面板的Mura现象。\n\n[0061]上述的显示面板Mura补偿方法的实施例中，获取并处理显示面板中各个预设灰阶对应的Mura补偿数据，得到各个中间灰阶对应的Mura补偿数据；在各预设灰阶和各中间灰阶中，获取与待补偿灰阶最接近的两个灰阶，确定为第一比对灰阶和第二比对灰阶；将对应第一比对灰阶的Mura补偿数据和对应第二比对灰阶的Mura补偿数据进行线性插值处理，得到对应待补偿灰阶的Mura补偿数据；根据对应待补充灰阶的Mura补偿数据，对显示面板进行Mura补偿，进而实现对显示面板中需待补偿的灰阶进行补偿消除Mura现象。通过有限的预设灰阶的Mura补偿数据，通过数据处理，内建多个中间灰阶的Mura补偿数据，从而可以改善显示面板Mura现象，从而提高Mura补偿精度，增强显示面板品质。\n\n[0062]在一个实施例中，如图4所示，提供了一种显示面板Mura补偿方法，以该方法应用于图1中的处理设备为例进行说明，该方法包括以下步骤：\n\n[0063]步骤S410，获取显示面板的当前图像，并根据当前图像确定待补偿灰阶。\n\n[0064]具体地，基于显示面板显示的当前图像，处理设备可对获取显示面板的当前图像，并根据当前图像确定待补偿灰阶。\n\n[0065]在一个示例中，处理设备可获取显示面板的当前图像，根据当前图像的Mura情况，确定需要补偿的灰阶(例如灰阶32)。\n\n[0066]步骤S420，获取并处理显示面板中各个预设灰阶对应的Mura补偿数据，得到各个中间灰阶对应的Mura补偿数据；中间灰阶的数值为相邻两个预设灰阶数值的平均值。\n\n[0067]步骤S430，在各预设灰阶和各中间灰阶中，获取与待补偿灰阶最接近的两个灰阶，确定为第一比对灰阶和第二比对灰阶。\n\n[0068]步骤S440，将对应第一比对灰阶的Mura补偿数据和对应第二比对灰阶的Mura补偿数据进行线性插值处理，得到对应待补偿灰阶的Mura补偿数据。\n\n[0069]步骤S450，根据对应待补充灰阶的Mura补偿数据，对显示面板进行Mura补偿。\n\n[0070]其中，上述步骤S420、步骤S430、步骤S440和步骤S450的具体内容过程可参考上文内容，此处不再赘述。\n\n[0071]上述实施例中，获取显示面板的当前图像，并根据当前图像确定待补偿灰阶；获取并处理显示面板中各个预设灰阶对应的Mura补偿数据，进而得到各个中间灰阶对应的Mura补偿数据；在各预设灰阶和各中间灰阶中，获取与待补偿灰阶最接近的两个灰阶，确定为第一比对灰阶和第二比对灰阶；将对应第一比对灰阶的Mura补偿数据和对应第二比对灰阶的Mura补偿数据进行线性插值处理，得到对应待补偿灰阶的Mura补偿数据；根据对应待补充灰阶的Mura补偿数据，对显示面板进行Mura补偿，进而实现对显示面板中需待补偿的灰阶进行补偿消除Mura现象。通过有限的预设灰阶的Mura补偿数据，通过数据处理，内建多个中间灰阶的Mura补偿数据，从而可以改善显示面板Mura现象，从而提高Mura补偿精度，增强显示面板品质。\n\n[0072]在一个实施例中，如图5所示，提供了一种显示面板Mura补偿方法，以该方法应用于图1中的处理设备为例进行说明，该方法包括以下步骤：\n\n[0073]步骤S510，获取显示面板中各个预设灰阶对应的Mura补偿数据；\n\n[0074]具体地，基于显示面板显示的当前图像，进而处理设备可获取显示面板中各个预设灰阶对应的Mura补偿数据。\n\n[0075]在一个示例中，预设灰阶对应的Mura补偿数据可预先存储在寄存器中，进而处理设备可通过查找表方式查询寄存器，获取各个预设灰阶对应的Mura补偿数据。\n\n[0076]步骤S520，分别对相邻两个对应预设灰阶的Mura补偿数据进行线性插值处理，得到各个中间灰阶对应的Mura补偿数据。\n\n[0077]具体地，处理设备可基于线性插值算法，分别对相邻两个对应预设灰阶的Mura补偿数据进行线性插值处理，进而可得到各个中间灰阶对应的Mura补偿数据。\n\n[0078]例如，处理设备可对灰阶10对应的Mura补偿数据和灰阶30对应的Mura补偿数据进行线性插值处理，进而可得到灰阶20对应的Mura补偿数据。处理设备还可对灰阶30对应的Mura补偿数据和灰阶50对应的Mura补偿数据进行线性插值处理，进而可得到灰阶40对应的Mura补偿数据。\n\n[0079]步骤S530，在各预设灰阶和各中间灰阶中，获取与待补偿灰阶最接近的两个灰阶，确定为第一比对灰阶和第二比对灰阶。\n\n[0080]步骤S540，将对应第一比对灰阶的Mura补偿数据和对应第二比对灰阶的Mura补偿数据进行线性插值处理，得到对应待补偿灰阶的Mura补偿数据。\n\n[0081]步骤S550，根据对应待补充灰阶的Mura补偿数据，对显示面板进行Mura补偿。\n\n[0082]其中，上述步骤S530、步骤S540和步骤S550的具体内容过程可参考上文内容，此处不再赘述。\n\n[0083]上述实施例中，处理设备可获取显示面板中各个预设灰阶对应的Mura补偿数据；分别对相邻两个对应预设灰阶的Mura补偿数据进行线性插值处理，进而得到所有的中间灰阶对应的Mura补偿数据；在各预设灰阶和各中间灰阶中，获取与待补偿灰阶最接近的两个灰阶，确定为第一比对灰阶和第二比对灰阶；将对应第一比对灰阶的Mura补偿数据和对应第二比对灰阶的Mura补偿数据进行线性插值处理，得到对应待补偿灰阶的Mura补偿数据；根据对应待补充灰阶的Mura补偿数据，对显示面板进行Mura补偿，进而实现对显示面板中需待补偿的灰阶进行补偿消除Mura现象。通过有限的预设灰阶的Mura补偿数据，通过数据处理，内建多个中间灰阶的Mura补偿数据，从而可以改善显示面板Mura现象，从而提高Mura补偿精度，增强显示面板品质。\n\n[0084]在一个实施例中，如图6所示，提供了一种显示面板Mura补偿方法，以该方法应用于图1中的处理设备为例进行说明，该方法包括以下步骤：\n\n[0085]步骤S610，获取显示面板中各个预设灰阶对应的Mura补偿数据。\n\n[0086]步骤S620，在各预设灰阶中，获取与待补偿灰阶最接近的两个灰阶，确定为第一参考灰阶和第二参考灰阶；\n\n[0087]例如，预设灰阶包括灰阶10，灰阶30和灰阶50；待补偿灰阶为灰阶32。则与灰阶32最接近的2个灰阶为灰阶30和灰阶50，即第一参考灰阶为灰阶30，第二参考灰阶为灰阶50。\n\n[0088]需要说明的是，若第一参考灰阶为灰阶50，第二参考灰阶为灰阶30。\n\n[0089]步骤S630，处理对应第一参考灰阶的Mura补偿数据和对应第二参考灰阶的Mura补偿数据，得到中间参考灰阶对应的Mura补偿数据；中间参考灰阶的数值为第一参考灰阶和第二参考灰阶数值的平均值；\n\n[0090]具体地，处理设备通过确定第一参考灰阶和第二参考灰阶，进而获取对应第一参考灰阶的Mura补偿数据和对应第二参考灰阶的Mura补偿数据。处理设备处理对应第一参考灰阶的Mura补偿数据和对应第二参考灰阶的Mura补偿数据，进而得到中间参考灰阶对应的Mura补偿数据。\n\n[0091]例如，第一参考灰阶为灰阶30，第二参考灰阶为灰阶50，则中间参考灰阶为灰阶40。处理对应灰阶30的Mura补偿数据和对应灰阶50的Mura补偿数据，得到灰阶40对应的Mura补偿数据。\n\n[0092]步骤S640，在第一参考灰阶、第二参考灰阶和中间参考灰阶中，选取与待补偿灰阶最接近的两个灰阶，确定为第一比对灰阶和第二比对灰阶。\n\n[0093]例如，第一参考灰阶为灰阶30，第二参考灰阶为灰阶50，中间参考灰阶为灰阶40；待补偿灰阶为灰阶32。则选取与待补偿灰阶最接近的两个灰阶为灰阶30和灰阶40，即确定第一比对灰阶为灰阶30和第二比对灰阶为灰阶40。\n\n[0094]需要说明的是，若第一比对灰阶为灰阶40，第二比对灰阶为灰阶30。\n\n[0095]步骤S650，将对应第一比对灰阶的Mura补偿数据和对应第二比对灰阶的Mura补偿数据进行线性插值处理，得到对应待补偿灰阶的Mura补偿数据。\n\n[0096]步骤S660，根据对应待补充灰阶的Mura补偿数据，对显示面板进行Mura补偿。\n\n[0097]其中，上述步骤S610、步骤S650和步骤S660的具体内容过程可参考上文内容，此处不再赘述。\n\n[0098]上述实施例中，处理设备获取显示面板的当前图像，根据当前图像确定待补偿灰阶(例如灰阶32)；在多个预设灰阶(例如灰阶10、灰阶30和灰阶50)中，选取与待补偿灰阶(灰阶32)最接近的两个灰阶，即第一参考灰阶(灰阶30)和第二参考灰阶(灰阶50)；将第一参考灰阶对应的Mura补偿数据和第二参考灰阶对应的Mura补偿数据进行处理，进而得到中间参考灰阶(灰阶40)对应的Mura补偿数据；在第一参考灰阶(灰阶30)、第二参考灰阶(灰阶50)和中间参考灰阶(灰阶40)中，选取与待补偿灰阶(灰阶32)最接近的两个灰阶，确定为第一比对灰阶(灰阶30)和第二比对灰阶(灰阶40)，将第一比对灰阶(灰阶30)对应的Mura补偿数据与第二比对灰阶(灰阶40)对应的Mura补偿数据进行线性插值处理，进而得到待补偿灰阶(灰阶32)对应的Mura补偿数据，进而根据对应待补充灰阶的Mura补偿数据，对待补偿灰阶进行补偿，消除Mura现象。通过有限的预设灰阶的Mura补偿数据，通过数据处理，内建多个中间灰阶的Mura补偿数据，从而可以改善显示面板Mura现象，从而提高Mura补偿精度，增强显示面板品质。\n\n[0099]在一个实施例中，处理对应第一参考灰阶的Mura补偿数据和对应第二参考灰阶的Mura补偿数据，得到中间参考灰阶对应的Mura补偿数据的步骤包括：\n\n[0100]将对应第一参考灰阶的Mura补偿数据和对应第二参考灰阶的Mura补偿数据进行样条插值处理，得到中间参考灰阶对应的Mura补偿数据。\n\n[0101]其中，样条插值处理指的是每两个点之间确定一个函数，这个函数就是一个样条，函数不同，样条就不同。\n\n[0102]具体地，处理设备基于样条插值算法，对对应第一参考灰阶的Mura补偿数据和对应第二参考灰阶的Mura补偿数据进行样条插值处理，进而可得到中间参考灰阶对应的Mura补偿数据。\n\n[0103]在一个实施例中，获取并处理显示面板中各个预设灰阶对应的Mura补偿数据，得到各个中间灰阶对应的Mura补偿数据的步骤之后还包括：\n\n[0104]存储各中间灰阶对应的Mura补偿数据。\n\n[0105]具体地，处理设备可计算出所有的中间灰阶对应的Mura补偿数据，并将各中间灰阶对应的Mura补偿数据存储在TCON(寄存器)中。\n\n[0106]应该理解的是，虽然图3-6的流程图中的各个步骤按照箭头的指示依次显示，但是这些步骤并不是必然按照箭头指示的顺序依次执行。除非本文中有明确的说明，这些步骤的执行并没有严格的顺序限制，这些步骤可以以其它的顺序执行。而且，图3-6中的至少一部分步骤可以包括多个子步骤或者多个阶段，这些子步骤或者阶段并不必然是在同一时刻执行完成，而是可以在不同的时刻执行，这些子步骤或者阶段的执行顺序也不必然是依次进行，而是可以与其它步骤或者其它步骤的子步骤或者阶段的至少一部分轮流或者交替地执行。\n\n[0107]在一个实施例中，如图7所示，还提供了一种显示面板Mura补偿装置，该装置包括：\n\n[0108]中间灰阶获取单元710，用于获取并处理显示面板中各个预设灰阶对应的Mura补偿数据，得到各个中间灰阶对应的Mura补偿数据；中间灰阶的数值为相邻两个预设灰阶数值的平均值。\n\n[0109]比对灰阶获取单元720，用于在各预设灰阶和各中间灰阶中，获取与待补偿灰阶最接近的两个灰阶，确定为第一比对灰阶和第二比对灰阶。\n\n[0110]补充灰阶处理单元730，用于将对应第一比对灰阶的Mura补偿数据和对应第二比对灰阶的Mura补偿数据进行线性插值处理，得到对应待补偿灰阶的Mura补偿数据。\n\n[0111]Mura补偿单元740，用于根据对应待补充灰阶的Mura补偿数据，对显示面板进行Mura补偿。\n\n[0112]关于显示面板Mura补偿装置的具体限定可以参见上文中对于显示面板Mura补偿方法的限定，在此不再赘述。上述显示面板Mura补偿装置中的各个模块可全部或部分通过软件、硬件及其组合来实现。上述各模块可以硬件形式内嵌于或独立于显示面板Mura补偿系统中的处理器中，也可以以软件形式存储于显示面板Mura补偿系统中的存储器中，以便于处理器调用执行以上各个模块对应的操作。\n\n[0113]另一方面，如图8所示，还提供了一种显示面板，该显示面板包括处理设备810以及连接处理设备810的发光设备820；处理设备810用于执行如上述任一项的显示面板Mura补偿方法的步骤。\n\n[0114]其中，发光设备820可以但不限于是LCD发光设备或LED发光设备。处理设备810可以但不限于是单片机或DSP。\n\n[0115]具体地，处理设备810可用于执行以下步骤：\n\n[0116]获取并处理显示面板中各个预设灰阶对应的Mura补偿数据，得到各个中间灰阶对应的Mura补偿数据；中间灰阶的数值为相邻两个预设灰阶数值的平均值；\n\n[0117]在各预设灰阶和各中间灰阶中，获取与待补偿灰阶最接近的两个灰阶，确定为第一比对灰阶和第二比对灰阶；\n\n[0118]将对应第一比对灰阶的Mura补偿数据和对应第二比对灰阶的Mura补偿数据进行线性插值处理，得到对应待补偿灰阶的Mura补偿数据；\n\n[0119]根据对应待补充灰阶的Mura补偿数据，对显示面板进行Mura补偿。\n\n[0120]关于显示面板的具体限定可以参见上文中对于显示面板Mura补偿方法的限定，在此不再赘述。\n\n[0121]在一个实施例中，还提供了一种显示装置，该显示装置包括如上述的显示面板。\n\n[0122]在一个实施例中，显示面板为OLED显示面板，Micro LED显示面板，Mini LED显示面板或μLED显示面板。\n\n[0123]关于显示装置的具体限定可以参见上文中对于显示面板Mura补偿方法及显示面板的限定，在此不再赘述。\n\n[0124]本领域普通技术人员可以理解实现上述实施例方法中的全部或部分流程，是可以通过计算机程序来指令相关的硬件来完成，所述的计算机程序可存储于一非易失性计算机可读取存储介质中，该计算机程序在执行时，可包括如上述各除法运算方法的实施例的流程。其中，本申请所提供的各实施例中所使用的对存储器、存储、数据库或其它介质的任何引用，均可包括非易失性和/或易失性存储器。非易失性存储器可包括只读存储器(ROM)、可编程ROM(PROM)、电可编程ROM(EPROM)、电可擦除可编程ROM(EEPROM)或闪存。易失性存储器可包括随机存取存储器(RAM)或者外部高速缓冲存储器。作为说明而非局限，RAM以多种形式可得，诸如静态RAM(SRAM)、动态RAM(DRAM)、同步DRAM(SDRAM)、双数据率SDRAM(DDRSDRAM)、增强型SDRAM(ESDRAM)、同步链路(Synchlink)DRAM(SLDRAM)、存储器总线(Rambus)直接RAM(RDRAM)、直接存储器总线动态RAM(DRDRAM)、以及存储器总线动态RAM(RDRAM)等。\n\n[0125]以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。\n\n[0126]以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10797, 23851, '技术领域\n\n[0001]本申请涉及显示面板技术领域，尤其涉及一种显示面板及其制作方法、显示装置。\n\n背景技术\n\n[0002]随着显示技术的高速发展，微型发光二极管显示器(Mini-LED显示器和Micro-LED显示器)已经逐步发展。现有的微型发光二极管显示面板中，微型发光二极管安装于阵列基板，位于阵列基板上的封胶层覆盖于微型发光二极管以防止微型发光二极管脱落。但现有的封胶结构存在强度不够或者降低光学品味的缺点。\n\n发明内容\n\n[0003]本申请实施例提供一种显示面板及其制作方法、显示装置，以解决现有微型发光二极管显示面板中封胶强度不够的问题。\n\n[0004]本申请提供了一种显示面板，其包括：\n\n[0005]微型发光二极管，所述微型发光二极管包括主体及自所述主体的周缘向外延伸的延伸部；\n\n[0006]阵列基板，所述微型发光二极管安装于所述阵列基板；\n\n[0007]封胶层，所述封胶层位于所述阵列基板上，并覆盖所述微型发光二极管的延伸部。\n\n[0008]在本申请的显示面板中，所述延伸部靠近所述主体的邻近所述阵列基板的底部。\n\n[0009]在本申请的显示面板中，所述延伸部的靠近所述主体部的第一侧的厚度小于所述延伸部的远离所述主体的第二侧的厚度。\n\n[0010]在本申请的显示面板中，所述延伸部包括连接于所述主体的所述底部并向外延伸的连接部及位于所述连接部上的加厚件，所述加厚件靠近所述第二侧，所述封胶层覆盖所述连接部和所述加厚件。\n\n[0011]在本申请的显示面板中，所述微型发光二极管包括芯片部，所述芯片部包括所述延伸部及所述主体，所述主体包括底板及位于所述底板上的电极，所述延伸部的所述连接部连接于所述底板并向外延伸，所述电极与所述延伸部的加厚件的材料相同。\n\n[0012]在本申请的显示面板中，所述微型发光二极管包括芯片部以及封装所述芯片部的封装部，其中，所述芯片部包括所述主体，所述封装部包括所述延伸部，或，所述芯片部包括所述主体及所述延伸部的所述连接部，所述封装部包括所述延伸部的所述加厚件。\n\n[0013]在本申请的显示面板中，在由所述第一侧指向所述第二侧的方向上，所述延伸部的厚度递增。\n\n[0014]在本申请的显示面板中，所述主体包括远离所述阵列基板的顶部，所述主体的顶部露出所述封胶层。\n\n[0015]本申请提供了一种显示面板的制作方法，其包括：\n\n[0016]形成阵列基板；\n\n[0017]将微型发光二极管安装于所述阵列基板，其中，所述微型发光二极管包括主体及自所述主体的底部向外延伸的延伸部，所述延伸部的靠近所述主体部的第一侧的厚度小于所述延伸部的远离所述主体的第二侧的厚度；\n\n[0018]形成封胶层，所述封胶层覆盖所述微型发光二极管的延伸部并露出所述芯片部远离所述阵列基板的顶部。\n\n[0019]本申请还提供了一种显示装置，所述显示装置包括上述任意一种显示面板。\n\n[0020]本申请的有益效果为：通过在微型发光二极管的芯片或封装部靠近阵列基板的底部设置延伸部，延伸部与阵列基板上的封胶层配合固定微型发光二极管于阵列基板上，且优选封胶层覆盖延伸部时将芯片远离阵列基板顶部的表面露出，通过这种设置和封装方式可以增强封装固定芯片的能力、提升水汽阻挡能力，从而提高微型发光二极管显示面板的可靠性及产品良率。\n\n附图说明\n\n[0021]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0022]图1为本申请实施例一提供的微型发光二极管的第一种结构示意图；\n\n[0023]图2为本申请实施例一提供的显示面板的第一种结构示意图；\n\n[0024]图3为本申请实施例一提供的微型发光二极管的第二种结构示意图；\n\n[0025]图4为本申请实施例一提供的显示面板的第二种结构示意图；\n\n[0026]图5为本申请实施例一提供的微型发光二极管的第一半成品的结构示意图；\n\n[0027]图6为本申请实施例一提供的微型发光二极管的第二半成品的结构示意图；\n\n[0028]图7为本申请实施例二提供的微型发光二极管的结构示意图；\n\n[0029]图8为本申请实施例三提供的微型发光二极管的第一种结构示意图；\n\n[0030]图9为本申请实施例三提供的微型发光二极管的第二种结构示意图；\n\n[0031]图10为本申请实施例四提供的显示面板的阵列基板的结构示意图；\n\n[0032]图11为本申请实施例四提供的显示面板的阵列基板与微型发光二极管连接的结构示意图；\n\n[0033]图12为本申请实施例四提供的显示面板的结构示意图。\n\n具体实施方式\n\n[0034]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0035]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0036]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0037]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0038]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0039]请参阅图1～图9，本申请提供了一种显示面板1000，显示面板1000包括：微型发光二极管10，微型发光二极管10包括主体200及自主体200的周缘向外延伸的延伸部100；阵列基板20，微型发光二极管10安装于阵列基板20；封胶层340，封胶层340位于阵列基板20上，并覆盖微型发光二极管10的延伸部100。\n\n[0040]本申请通过在微型发光二极管靠近阵列基板的底部设置延伸部，延伸部与阵列基板上的封胶层配合固定微型发光二极管于阵列基板上，且优选封胶层覆盖延伸部时将芯片远离阵列基板顶部的表面露出，通过这种延伸部设置和封胶层设置方式可以增强封装固定芯片的能力、提升水汽阻挡能力，从而提高微型发光二极管显示面板的可靠性及产品良率。\n\n[0041]现结合具体实施例对本申请的技术方案进行描述。\n\n[0042]实施例一\n\n[0043]请参阅图1、图2、图3、图4、图5、图6，本申请提供了一种显示面板1000，显示面板1000包括：微型发光二极管10，微型发光二极管10包括主体200及自主体200的周缘向外延伸的延伸部100；阵列基板20，微型发光二极管10安装于阵列基板20；封胶层340，封胶层340位于阵列基板20上，并覆盖微型发光二极管10的延伸部100。\n\n[0044]需要说明的是，微型发光二极管10包括主体200及自主体200的周缘向外延伸的延伸部100，这里的周缘是指主体200周围的边缘，例如主体200为圆柱形时，可以从圆柱形主体200周围的边缘四周向外延伸，或者可以从圆柱形主体200周围的边缘部分区域向外延伸。\n\n[0045]请参阅图5，图5示意了微型发光二极管10的第一半成品2000的结构，微型发光二极管10包括图5中示意的第一半成品2000的结构以及在图1、图2、图6中示意的结构，在此举例说明微型发光二极管10的第一半成品2000的结构，但不限于此。具体的，微型发光二极管10的第一半成品2000的结构包括：基底111、n型GaN部112、p型GaN部113，基底111可以为蓝宝石基底，n型GaN部112设置于基底111上，p型GaN部113设置于n型GaN部112上，但不限于此。\n\n[0046]请参阅图6，图6示意了微型发光二极管10不包括延伸部时的第二半成品3000的结构，微型发光二极管10包括图6中示意的第二半成品3000的结构以及在图1、图2中示意的结构，在此举例说明微型发光二极管10的第二半成品2000的结构，但不限于此。在微型发光二极管10的第一半成品2000完成后进行后续制造流程形成微型发光二极管10的第二半成品3000。具体的，微型发光二极管10的第二半成品3000的结构包括：基底111、n型GaN部112、p型GaN部113、电极114～115，基底111可以为蓝宝石基底，n型GaN部112设置于基底111上，p型GaN部113设置于n型GaN部112上，电极114～115设置于基底111上，电极114为n电极连接于n型GaN部112，电极115为p电极连接于p型GaN部113，但不限于此。\n\n[0047]需要说明的是，虽然在此处举例说明了微型发光二极管10或者微型发光二极管10的第一半成品2000、第二半成品3000的结构或材料，但不限于此。\n\n[0048]请参阅图1、图2、图3、图4，图2为本实施例第一种显示面板1000的结构示意图，图1为图2中微型发光二极管10的放大结构示意图；图4为本实施例第二种显示面板1000的结构示意图，图3为图4中微型发光二极管10的放大结构示意图.\n\n[0049]在本实施例中，主体200包括顶部210和底部110，延伸部100靠近主体200的邻近阵列基板20的底部110。在一些实施例中，延伸部100可以与阵列基板20接触，主体200的底部110可以与阵列基板20接触。\n\n[0050]在一些实施例中，如图1、图2所示，延伸部100的靠近主体200的第一侧A的厚度小于延伸部100的远离主体200的第二侧B的厚度。\n\n[0051]在一些实施例中，如图3、图4所示，在由第一侧A指向第二侧B的方向上，延伸部100的厚度递增。\n\n[0052]在一些实施例中，如图1、图2、图3、图4所示，延伸部100包括连接于主体200的底部110并向外延伸的连接部120及位于连接部120上的加厚件130，加厚件130靠近第二侧B，封胶层340覆盖连接部120和加厚件130。具体的，在一些实施例中，主体200的底部110为微型发光二极管10的第一半成品2000、第二半成品3000的基底111，例如为蓝宝石基底。\n\n[0053]在一些实施例中，如图1、图2、图3、图4所示，主体200包括远离阵列基板20的顶部210，主体200的顶部210露出封胶层340，可以防止封胶层340对光学的影响。但不限于主体200的顶部210露出封胶层340，在一些实施例中，主体200的顶部210可以被封胶层340覆盖。\n\n[0054]在本实施例中，请通过在微型发光二极管设置延伸部，延伸部与阵列基板上的封胶层配合固定微型发光二极管于阵列基板上，延伸部可以提供微型发光二极管脱落时的回拉力而起到防止脱落的效果，且优选封胶层覆盖延伸部时将主体远离阵列基板顶部的表面露出，通过这种延伸部设置和封胶层设置方式可以增强封装固定芯片的能力、提升水汽阻挡能力，从而提高微型发光二极管显示面板的可靠性及产品良率。\n\n[0055]实施例二\n\n[0056]请参阅图7，基于实施例一，本实施例进一步说明了微型发光二极管10的延伸部100的结构，微型发光二极管10包括芯片部500，芯片部500包括延伸部100及主体200，主体200包括底板140及位于底板140上的电极220，延伸部100的连接部120连接于底板140并向外延伸，电极220与延伸部100的加厚件130的材料相同。\n\n[0057]具体的，图7中电极220与图6中微型发光二极管10的第二半成品3000的电极114或/和115为同一电极，在此实施例为了便于说明分开标识。具体的，延伸部100的加厚件130可以与图6中微型发光二极管10的第二半成品3000的电极114或/和115材料相同，例如在完成微型发光二极管10的第一半成品2000后在形成电极114或/和115时，通过清洗、沉积、涂布、曝光、显影、蚀刻、剥离等工艺图案化金属同时形成加厚件130、电极114或/和115。在此实施例中加厚件130与电极114或/和115一体形成，此时加厚件130为金属材料，可以不用单独增加工艺来制造加厚件130，减小了工艺步骤。\n\n[0058]在本实施例中，通过在微型发光二极管设置延伸部，延伸部与阵列基板上的封胶层配合固定微型发光二极管于阵列基板上，延伸部的加厚件与在微型发光二极管的第二半成品3000中电极114或/和115相同材料制成，延伸部可以提供微型发光二极管脱落时的回拉力而起到防止脱落的效果，通过这种延伸部设置和封胶层设置方式可以增强封装固定芯片的能力、提升水汽阻挡能力，从而提高微型发光二极管显示面板的可靠性及产品良率。\n\n[0059]实施例三\n\n[0060]请参阅图8、图9，基于实施例一，本实施例区别于实施例二进一步说明了微型发光二极管10的延伸部100的结构，微型发光二极管10包括芯片部500以及封装芯片部500的封装部300，其中，芯片部500包括主体200，封装部300包括延伸部100，或，芯片部500包括主体200及延伸部100的连接部120，封装部300包括延伸部100的加厚件130。\n\n[0061]具体的，请参阅图8，在一些实施例中，微型发光二极管10包括芯片部500以及封装芯片部500的封装部300，其中，芯片部500包括主体200，封装部300包括延伸部100。即封装部300封装芯片部500的同时形成了延伸部100，延伸部100包括连接于主体200的底部110并向外延伸的连接部120及位于连接部120上的加厚件130，加厚件130靠近第二侧B。\n\n[0062]具体的，请参阅图9，在一些实施例中，微型发光二极管10包括芯片部500以及封装芯片部500的封装部300，其中，芯片部500包括主体200及延伸部100的连接部120，封装部300包括延伸部100的加厚件130。具体的，封装部300封装芯片部500的同时形成了延伸部100的加厚件130，加厚件130靠近第二侧B。例如封装部300形成时同时具有封装芯片的和加厚件的两部分。\n\n[0063]在一些实施中，封装部300与延伸部100或延伸部100的加厚件130一体形成，在一些实施中，延伸部100或延伸部100的加厚件130为封装部300的材料，可以不用单独增加工艺来制造延伸部100或延伸部100的加厚件130，减小了工艺步骤。\n\n[0064]在本实施例中封装部封装的芯片部可以为一个或一个以上的芯片部，或者为一种或一种以上的芯片部，在此不做限定。\n\n[0065]在本实施例中，通过在微型发光二极管设置延伸部，延伸部与阵列基板上的封胶层配合固定微型发光二极管于阵列基板上，封装部300包括延伸部100或延伸部100的加厚件130，延伸部可以提供微型发光二极管脱落时的回拉力而起到防止脱落的效果，通过这种设置方式可以增强封装固定芯片的能力、提升水汽阻挡能力，从而提高微型发光二极管显示面板的可靠性及产品良率。\n\n[0066]综合上述实施例，在一些实施例中，延伸部100或延伸部100的加厚件130还可以通过其他方法制作而成，例如可以通过增加新的制作工艺步骤形成延伸部100或延伸部100的加厚件130。例如延伸部100的连接部120和加厚件130都为相同材料，例如延伸部100的连接部120和加厚件130、以及主体200的底部110都为相同材料，例如延伸部100的连接部120和加厚件130由主体200的底部110通过切割等方式延伸形成，例如延伸部100的连接部120和加厚件130、以及主体200的底部110都为基底110的材料。\n\n[0067]综合上述实施例，延伸部100自主体200的周缘向外延伸的长度可以为20～1000um，延伸部100的厚度可以为20～500um，但不限定于此，只要延伸部100不影响微型发光二极管10的发光角度。\n\n[0068]封胶层340的厚度可以为10～500um，但不限定于此，只要封胶层340在阵列基板上覆盖延伸部100。优选主体200的顶部210露出封胶层340，但不限于此，在一些实施例中，主体200的顶部210可以被封胶层340覆盖。\n\n[0069]综合上述实施例，上述实施例中的微型发光二极管10可以为Mini-LED、Micro-LED等。\n\n[0070]综合上述实施例，上述实施例中的显示面板可以直接显示图像，即不需要液晶盒等结构就可以显示图像，但不限于此。\n\n[0071]综合上述实施例，上述实施例中的显示面板还可以包括液晶盒等结构，上述实施例中的显示面板为显示面板中的背光模组结构，但不限于此。\n\n[0072]实施例四\n\n[0073]请参阅图10、图11、图12，本申请提供了一种显示面板的制造方法，显示面板的制造方法包括：\n\n[0074]S1，形成阵列基板，如图10所示，通过半导体制作流程：清洗、沉积、涂布、曝光、显影、蚀刻、剥离等多次制程制作出阵列基板20，以待与上述实施例中的微型发光二极管10打件接触。阵列基板20包括基底310、打件金属层320、绝缘层330等结构，打件金属层320设置于基底310上，绝缘层330设置于打件金属层320上并具有通孔331露出打件金属电极332，打件金属电极332在后续工艺中与上述微型发光二极管10电性连接。本实施例中阵列基板20的结构不限于此，例如还可以具有驱动走线、层间绝缘层、有源层等结构。\n\n[0075]S2，将微型发光二极管安装于阵列基板，如图11所示，将上述微型发光二极管10安装于阵列基板20，将上述微型发光二极管10与阵列基板20的打件金属电极332电性连接。其中，微型发光二极管10包括主体200及自所述主体200的底部110向外延伸的延伸部100，延伸部100的靠近主体200的第一侧A的厚度小于延伸部100的远离主体200的第二侧B的厚度；\n\n[0076]S3，形成封胶层，如图12所示，封胶层340覆盖微型发光二极管10的延伸部100并露出芯片部500远离阵列基板20的顶部210。\n\n[0077]本申请还提供了一种显示装置，显示装置包括上述任一种的显示面板。\n\n[0078]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0079]以上对本申请实施例进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示面板技术领域，尤其涉及一种显示面板及其制作方法、显示装置。\n\n背景技术\n\n[0002]随着显示技术的高速发展，微型发光二极管显示器(Mini-LED显示器和Micro-LED显示器)已经逐步发展。现有的微型发光二极管显示面板中，微型发光二极管安装于阵列基板，位于阵列基板上的封胶层覆盖于微型发光二极管以防止微型发光二极管脱落。但现有的封胶结构存在强度不够或者降低光学品味的缺点。\n\n发明内容\n\n[0003]本申请实施例提供一种显示面板及其制作方法、显示装置，以解决现有微型发光二极管显示面板中封胶强度不够的问题。\n\n[0004]本申请提供了一种显示面板，其包括：\n\n[0005]微型发光二极管，所述微型发光二极管包括主体及自所述主体的周缘向外延伸的延伸部；\n\n[0006]阵列基板，所述微型发光二极管安装于所述阵列基板；\n\n[0007]封胶层，所述封胶层位于所述阵列基板上，并覆盖所述微型发光二极管的延伸部。\n\n[0008]在本申请的显示面板中，所述延伸部靠近所述主体的邻近所述阵列基板的底部。\n\n[0009]在本申请的显示面板中，所述延伸部的靠近所述主体部的第一侧的厚度小于所述延伸部的远离所述主体的第二侧的厚度。\n\n[0010]在本申请的显示面板中，所述延伸部包括连接于所述主体的所述底部并向外延伸的连接部及位于所述连接部上的加厚件，所述加厚件靠近所述第二侧，所述封胶层覆盖所述连接部和所述加厚件。\n\n[0011]在本申请的显示面板中，所述微型发光二极管包括芯片部，所述芯片部包括所述延伸部及所述主体，所述主体包括底板及位于所述底板上的电极，所述延伸部的所述连接部连接于所述底板并向外延伸，所述电极与所述延伸部的加厚件的材料相同。\n\n[0012]在本申请的显示面板中，所述微型发光二极管包括芯片部以及封装所述芯片部的封装部，其中，所述芯片部包括所述主体，所述封装部包括所述延伸部，或，所述芯片部包括所述主体及所述延伸部的所述连接部，所述封装部包括所述延伸部的所述加厚件。\n\n[0013]在本申请的显示面板中，在由所述第一侧指向所述第二侧的方向上，所述延伸部的厚度递增。\n\n[0014]在本申请的显示面板中，所述主体包括远离所述阵列基板的顶部，所述主体的顶部露出所述封胶层。\n\n[0015]本申请提供了一种显示面板的制作方法，其包括：\n\n[0016]形成阵列基板；\n\n[0017]将微型发光二极管安装于所述阵列基板，其中，所述微型发光二极管包括主体及自所述主体的底部向外延伸的延伸部，所述延伸部的靠近所述主体部的第一侧的厚度小于所述延伸部的远离所述主体的第二侧的厚度；\n\n[0018]形成封胶层，所述封胶层覆盖所述微型发光二极管的延伸部并露出所述芯片部远离所述阵列基板的顶部。\n\n[0019]本申请还提供了一种显示装置，所述显示装置包括上述任意一种显示面板。\n\n[0020]本申请的有益效果为：通过在微型发光二极管的芯片或封装部靠近阵列基板的底部设置延伸部，延伸部与阵列基板上的封胶层配合固定微型发光二极管于阵列基板上，且优选封胶层覆盖延伸部时将芯片远离阵列基板顶部的表面露出，通过这种设置和封装方式可以增强封装固定芯片的能力、提升水汽阻挡能力，从而提高微型发光二极管显示面板的可靠性及产品良率。\n\n附图说明\n\n[0021]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0022]图1为本申请实施例一提供的微型发光二极管的第一种结构示意图；\n\n[0023]图2为本申请实施例一提供的显示面板的第一种结构示意图；\n\n[0024]图3为本申请实施例一提供的微型发光二极管的第二种结构示意图；\n\n[0025]图4为本申请实施例一提供的显示面板的第二种结构示意图；\n\n[0026]图5为本申请实施例一提供的微型发光二极管的第一半成品的结构示意图；\n\n[0027]图6为本申请实施例一提供的微型发光二极管的第二半成品的结构示意图；\n\n[0028]图7为本申请实施例二提供的微型发光二极管的结构示意图；\n\n[0029]图8为本申请实施例三提供的微型发光二极管的第一种结构示意图；\n\n[0030]图9为本申请实施例三提供的微型发光二极管的第二种结构示意图；\n\n[0031]图10为本申请实施例四提供的显示面板的阵列基板的结构示意图；\n\n[0032]图11为本申请实施例四提供的显示面板的阵列基板与微型发光二极管连接的结构示意图；\n\n[0033]图12为本申请实施例四提供的显示面板的结构示意图。\n\n具体实施方式\n\n[0034]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0035]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0036]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0037]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0038]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0039]请参阅图1～图9，本申请提供了一种显示面板1000，显示面板1000包括：微型发光二极管10，微型发光二极管10包括主体200及自主体200的周缘向外延伸的延伸部100；阵列基板20，微型发光二极管10安装于阵列基板20；封胶层340，封胶层340位于阵列基板20上，并覆盖微型发光二极管10的延伸部100。\n\n[0040]本申请通过在微型发光二极管靠近阵列基板的底部设置延伸部，延伸部与阵列基板上的封胶层配合固定微型发光二极管于阵列基板上，且优选封胶层覆盖延伸部时将芯片远离阵列基板顶部的表面露出，通过这种延伸部设置和封胶层设置方式可以增强封装固定芯片的能力、提升水汽阻挡能力，从而提高微型发光二极管显示面板的可靠性及产品良率。\n\n[0041]现结合具体实施例对本申请的技术方案进行描述。\n\n[0042]实施例一\n\n[0043]请参阅图1、图2、图3、图4、图5、图6，本申请提供了一种显示面板1000，显示面板1000包括：微型发光二极管10，微型发光二极管10包括主体200及自主体200的周缘向外延伸的延伸部100；阵列基板20，微型发光二极管10安装于阵列基板20；封胶层340，封胶层340位于阵列基板20上，并覆盖微型发光二极管10的延伸部100。\n\n[0044]需要说明的是，微型发光二极管10包括主体200及自主体200的周缘向外延伸的延伸部100，这里的周缘是指主体200周围的边缘，例如主体200为圆柱形时，可以从圆柱形主体200周围的边缘四周向外延伸，或者可以从圆柱形主体200周围的边缘部分区域向外延伸。\n\n[0045]请参阅图5，图5示意了微型发光二极管10的第一半成品2000的结构，微型发光二极管10包括图5中示意的第一半成品2000的结构以及在图1、图2、图6中示意的结构，在此举例说明微型发光二极管10的第一半成品2000的结构，但不限于此。具体的，微型发光二极管10的第一半成品2000的结构包括：基底111、n型GaN部112、p型GaN部113，基底111可以为蓝宝石基底，n型GaN部112设置于基底111上，p型GaN部113设置于n型GaN部112上，但不限于此。\n\n[0046]请参阅图6，图6示意了微型发光二极管10不包括延伸部时的第二半成品3000的结构，微型发光二极管10包括图6中示意的第二半成品3000的结构以及在图1、图2中示意的结构，在此举例说明微型发光二极管10的第二半成品2000的结构，但不限于此。在微型发光二极管10的第一半成品2000完成后进行后续制造流程形成微型发光二极管10的第二半成品3000。具体的，微型发光二极管10的第二半成品3000的结构包括：基底111、n型GaN部112、p型GaN部113、电极114～115，基底111可以为蓝宝石基底，n型GaN部112设置于基底111上，p型GaN部113设置于n型GaN部112上，电极114～115设置于基底111上，电极114为n电极连接于n型GaN部112，电极115为p电极连接于p型GaN部113，但不限于此。\n\n[0047]需要说明的是，虽然在此处举例说明了微型发光二极管10或者微型发光二极管10的第一半成品2000、第二半成品3000的结构或材料，但不限于此。\n\n[0048]请参阅图1、图2、图3、图4，图2为本实施例第一种显示面板1000的结构示意图，图1为图2中微型发光二极管10的放大结构示意图；图4为本实施例第二种显示面板1000的结构示意图，图3为图4中微型发光二极管10的放大结构示意图.\n\n[0049]在本实施例中，主体200包括顶部210和底部110，延伸部100靠近主体200的邻近阵列基板20的底部110。在一些实施例中，延伸部100可以与阵列基板20接触，主体200的底部110可以与阵列基板20接触。\n\n[0050]在一些实施例中，如图1、图2所示，延伸部100的靠近主体200的第一侧A的厚度小于延伸部100的远离主体200的第二侧B的厚度。\n\n[0051]在一些实施例中，如图3、图4所示，在由第一侧A指向第二侧B的方向上，延伸部100的厚度递增。\n\n[0052]在一些实施例中，如图1、图2、图3、图4所示，延伸部100包括连接于主体200的底部110并向外延伸的连接部120及位于连接部120上的加厚件130，加厚件130靠近第二侧B，封胶层340覆盖连接部120和加厚件130。具体的，在一些实施例中，主体200的底部110为微型发光二极管10的第一半成品2000、第二半成品3000的基底111，例如为蓝宝石基底。\n\n[0053]在一些实施例中，如图1、图2、图3、图4所示，主体200包括远离阵列基板20的顶部210，主体200的顶部210露出封胶层340，可以防止封胶层340对光学的影响。但不限于主体200的顶部210露出封胶层340，在一些实施例中，主体200的顶部210可以被封胶层340覆盖。\n\n[0054]在本实施例中，请通过在微型发光二极管设置延伸部，延伸部与阵列基板上的封胶层配合固定微型发光二极管于阵列基板上，延伸部可以提供微型发光二极管脱落时的回拉力而起到防止脱落的效果，且优选封胶层覆盖延伸部时将主体远离阵列基板顶部的表面露出，通过这种延伸部设置和封胶层设置方式可以增强封装固定芯片的能力、提升水汽阻挡能力，从而提高微型发光二极管显示面板的可靠性及产品良率。\n\n[0055]实施例二\n\n[0056]请参阅图7，基于实施例一，本实施例进一步说明了微型发光二极管10的延伸部100的结构，微型发光二极管10包括芯片部500，芯片部500包括延伸部100及主体200，主体200包括底板140及位于底板140上的电极220，延伸部100的连接部120连接于底板140并向外延伸，电极220与延伸部100的加厚件130的材料相同。\n\n[0057]具体的，图7中电极220与图6中微型发光二极管10的第二半成品3000的电极114或/和115为同一电极，在此实施例为了便于说明分开标识。具体的，延伸部100的加厚件130可以与图6中微型发光二极管10的第二半成品3000的电极114或/和115材料相同，例如在完成微型发光二极管10的第一半成品2000后在形成电极114或/和115时，通过清洗、沉积、涂布、曝光、显影、蚀刻、剥离等工艺图案化金属同时形成加厚件130、电极114或/和115。在此实施例中加厚件130与电极114或/和115一体形成，此时加厚件130为金属材料，可以不用单独增加工艺来制造加厚件130，减小了工艺步骤。\n\n[0058]在本实施例中，通过在微型发光二极管设置延伸部，延伸部与阵列基板上的封胶层配合固定微型发光二极管于阵列基板上，延伸部的加厚件与在微型发光二极管的第二半成品3000中电极114或/和115相同材料制成，延伸部可以提供微型发光二极管脱落时的回拉力而起到防止脱落的效果，通过这种延伸部设置和封胶层设置方式可以增强封装固定芯片的能力、提升水汽阻挡能力，从而提高微型发光二极管显示面板的可靠性及产品良率。\n\n[0059]实施例三\n\n[0060]请参阅图8、图9，基于实施例一，本实施例区别于实施例二进一步说明了微型发光二极管10的延伸部100的结构，微型发光二极管10包括芯片部500以及封装芯片部500的封装部300，其中，芯片部500包括主体200，封装部300包括延伸部100，或，芯片部500包括主体200及延伸部100的连接部120，封装部300包括延伸部100的加厚件130。\n\n[0061]具体的，请参阅图8，在一些实施例中，微型发光二极管10包括芯片部500以及封装芯片部500的封装部300，其中，芯片部500包括主体200，封装部300包括延伸部100。即封装部300封装芯片部500的同时形成了延伸部100，延伸部100包括连接于主体200的底部110并向外延伸的连接部120及位于连接部120上的加厚件130，加厚件130靠近第二侧B。\n\n[0062]具体的，请参阅图9，在一些实施例中，微型发光二极管10包括芯片部500以及封装芯片部500的封装部300，其中，芯片部500包括主体200及延伸部100的连接部120，封装部300包括延伸部100的加厚件130。具体的，封装部300封装芯片部500的同时形成了延伸部100的加厚件130，加厚件130靠近第二侧B。例如封装部300形成时同时具有封装芯片的和加厚件的两部分。\n\n[0063]在一些实施中，封装部300与延伸部100或延伸部100的加厚件130一体形成，在一些实施中，延伸部100或延伸部100的加厚件130为封装部300的材料，可以不用单独增加工艺来制造延伸部100或延伸部100的加厚件130，减小了工艺步骤。\n\n[0064]在本实施例中封装部封装的芯片部可以为一个或一个以上的芯片部，或者为一种或一种以上的芯片部，在此不做限定。\n\n[0065]在本实施例中，通过在微型发光二极管设置延伸部，延伸部与阵列基板上的封胶层配合固定微型发光二极管于阵列基板上，封装部300包括延伸部100或延伸部100的加厚件130，延伸部可以提供微型发光二极管脱落时的回拉力而起到防止脱落的效果，通过这种设置方式可以增强封装固定芯片的能力、提升水汽阻挡能力，从而提高微型发光二极管显示面板的可靠性及产品良率。\n\n[0066]综合上述实施例，在一些实施例中，延伸部100或延伸部100的加厚件130还可以通过其他方法制作而成，例如可以通过增加新的制作工艺步骤形成延伸部100或延伸部100的加厚件130。例如延伸部100的连接部120和加厚件130都为相同材料，例如延伸部100的连接部120和加厚件130、以及主体200的底部110都为相同材料，例如延伸部100的连接部120和加厚件130由主体200的底部110通过切割等方式延伸形成，例如延伸部100的连接部120和加厚件130、以及主体200的底部110都为基底110的材料。\n\n[0067]综合上述实施例，延伸部100自主体200的周缘向外延伸的长度可以为20～1000um，延伸部100的厚度可以为20～500um，但不限定于此，只要延伸部100不影响微型发光二极管10的发光角度。\n\n[0068]封胶层340的厚度可以为10～500um，但不限定于此，只要封胶层340在阵列基板上覆盖延伸部100。优选主体200的顶部210露出封胶层340，但不限于此，在一些实施例中，主体200的顶部210可以被封胶层340覆盖。\n\n[0069]综合上述实施例，上述实施例中的微型发光二极管10可以为Mini-LED、Micro-LED等。\n\n[0070]综合上述实施例，上述实施例中的显示面板可以直接显示图像，即不需要液晶盒等结构就可以显示图像，但不限于此。\n\n[0071]综合上述实施例，上述实施例中的显示面板还可以包括液晶盒等结构，上述实施例中的显示面板为显示面板中的背光模组结构，但不限于此。\n\n[0072]实施例四\n\n[0073]请参阅图10、图11、图12，本申请提供了一种显示面板的制造方法，显示面板的制造方法包括：\n\n[0074]S1，形成阵列基板，如图10所示，通过半导体制作流程：清洗、沉积、涂布、曝光、显影、蚀刻、剥离等多次制程制作出阵列基板20，以待与上述实施例中的微型发光二极管10打件接触。阵列基板20包括基底310、打件金属层320、绝缘层330等结构，打件金属层320设置于基底310上，绝缘层330设置于打件金属层320上并具有通孔331露出打件金属电极332，打件金属电极332在后续工艺中与上述微型发光二极管10电性连接。本实施例中阵列基板20的结构不限于此，例如还可以具有驱动走线、层间绝缘层、有源层等结构。\n\n[0075]S2，将微型发光二极管安装于阵列基板，如图11所示，将上述微型发光二极管10安装于阵列基板20，将上述微型发光二极管10与阵列基板20的打件金属电极332电性连接。其中，微型发光二极管10包括主体200及自所述主体200的底部110向外延伸的延伸部100，延伸部100的靠近主体200的第一侧A的厚度小于延伸部100的远离主体200的第二侧B的厚度；\n\n[0076]S3，形成封胶层，如图12所示，封胶层340覆盖微型发光二极管10的延伸部100并露出芯片部500远离阵列基板20的顶部210。\n\n[0077]本申请还提供了一种显示装置，显示装置包括上述任一种的显示面板。\n\n[0078]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0079]以上对本申请实施例进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10798, 23852, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种驱动电路的数据处理方法及驱动电路。\n\n背景技术\n\n[0002]微型发光二极管(Micro LED)由于具有高效率、低功耗和高信赖性，而逐渐受到市场的欢迎。现有的Micro LED大多采用转印技术形成在带有驱动电路的基板上，通过驱动电路带动Micro LED实现发光并显示。\n\n[0003]然而，采用目前的驱动电路的Micro LED在工作时，会随着使用时间的增加而出现色偏的问题。\n\n发明内容\n\n[0004]本申请实施例提供了一种驱动电路的数据处理方法及驱动电路，可以解决MicroLED随着使用时间的增加而出现色偏的问题。\n\n[0005]第一方面，本申请实施例提供了一种驱动电路的数据处理方法，包括：\n\n[0006]获取时序参数；\n\n[0007]基于所述时序参数进行数据处理，得到第一处理结果；\n\n[0008]根据预设基准电压对所述第一处理结果进行解码，得到第二处理结果；\n\n[0009]对所述第二处理结果进行放大处理，并将放大处理后的所述第二处理结果输出。\n\n[0010]在本申请实施例提供的驱动电路的数据处理方法中，所述基于所述时序参数进行数据处理，得到第一处理结果，包括：\n\n[0011]基于所述时序参数进行信号初始化处理和衰减处理，得到第一处理结果。\n\n[0012]在本申请实施例提供的驱动电路的数据处理方法中，所述时序参数包括数据处理时长、初始化时长和最大计数值；\n\n[0013]所述基于所述时序参数进行信号初始化处理和衰减处理，得到第一处理结果，包括：\n\n[0014]基于所述数据处理时长、所述初始化时长和所述最大计数值进行信号初始化处理和衰减处理，得到第一处理结果。\n\n[0015]在本申请实施例提供的驱动电路的数据处理方法中，所述基于所述数据处理时长、所述初始化时长和所述最大计数值进行信号初始化处理和衰减处理，得到第一处理结果，包括：\n\n[0016]根据预设初始化开始时间和所述初始化时长进行信号初始化处理，得到初始输入信号；\n\n[0017]根据所述预设初始化开始时间、所述初始化时长、所述数据处理时长和所述最大计数值对所述初始输入信号进行衰减处理，得到衰减信号；\n\n[0018]其中，所述初始输入信号和所述衰减信号为所述第一处理结果。\n\n[0019]在本申请实施例提供的驱动电路的数据处理方法中，所述根据所述预设初始化开始时间、所述初始化时长、所述数据处理时长和所述最大计数值对所述初始输入信号进行衰减处理，得到第一处理结果，包括：\n\n[0020]基于所述预设初始化开始时间、所述初始化时长和所述最大计数值对所述初始化输入信号进行第一子衰减处理，得到第一子衰减信号；\n\n[0021]根据所述预设初始化开始时间和所述数据处理时长确定所述数据处理的结束时间；\n\n[0022]将所述数据处理的结束时间与所述最大计数值的对应时间进行比较，以根据比较结果确定所述第一处理结果。\n\n[0023]在本申请实施例提供的驱动电路的数据处理方法中，所述根据比较结果确定所述第一处理结果，包括：\n\n[0024]若所述数据处理的结束时间等于所述最大计数值的对应时间，则所述初始输入信号和所述第一子衰减信号为第一处理结果；\n\n[0025]若所述数据处理的结束时间大于所述最大计数值的对应时间，则对所述第一子衰减信号进行第二子衰减处理，得到第二子衰减信号，其中，所述初始输入信号、所述第一子衰减信号和所述第二子衰减信号为所述第一处理结果。\n\n[0026]在本申请实施例提供的驱动电路的数据处理方法中，所述对所述第一子衰减信号进行第二子衰减处理，得到第二子衰减信号，包括：\n\n[0027]将所述第一子衰减信号置零，得到所述第二子衰减信号。\n\n[0028]在本申请实施例提供的驱动电路的数据处理方法中，所述基于所述预设初始化开始时间、所述初始化时长和所述最大计数值对所述初始化输入信号进行第一子衰减处理，包括：\n\n[0029]根据所述预设初始化开始时间和所述最大计数值确定所述最大计数值的对应时间；\n\n[0030]根据所述预设初始化开始时间、所述初始化时长和所述最大计数值的对应时间对所述初始化输入信号进行第一子衰减处理。\n\n[0031]第二方面，本申请实施例提供了一种驱动电路，包括：\n\n[0032]控制器，用于获取时序参数，并基于所述时序参数进行数据处理，得到第一处理结果；\n\n[0033]解码器，用于根据预设基准电压对所述第一处理结果进行解码，得到第二处理结果；\n\n[0034]比例放大器，用于对所述第二处理结果进行放大处理，并将放大处理后的所述第二处理结果输出。\n\n[0035]在本申请实施例提供的驱动电路中，所述控制器包括：\n\n[0036]定时模块，所述定时模块用于获取时序参数；\n\n[0037]数据处理模块，所述数据处理模块用于基于所述时序参数进行数据处理，得到第一处理结果。\n\n[0038]由上，本申请实施例提供的驱动电路的数据处理方法包括获取时序参数；基于所述时序参数进行数据处理，得到第一处理结果；根据预设基准电压对所述第一处理结果进行解码，得到第二处理结果；对所述第二处理结果进行放大处理，并将放大处理后的所述第二处理结果输出。通过本方案可以产生随时间变化的电压信号，从而解决MicroLED随着使用时间的增加而出现色偏的问题。\n\n附图说明\n\n[0039]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0040]图1是本申请实施例提供的驱动电路的数据处理方法的流程示意图。\n\n[0041]图2是本申请实施例提供的数字信号的结构示意图。\n\n[0042]图3是本申请实施例提供的第一处理结果的结构示意图。\n\n[0043]图4是本申请实施例提供的放大处理后的第二处理结果的结构示意图。\n\n[0044]图5是本申请实施例提供的驱动电路的结构示意图。\n\n[0045]图6是本申请实施例提供的驱动电路的另一结构示意图。\n\n具体实施方式\n\n[0046]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0047]本申请实施例提供了一种驱动电路的数据处理方法和驱动电路，以下将分别进行详细说明。\n\n[0048]请参阅图1，图1是本申请实施例提供的驱动电路的数据处理方法。该驱动电路的数据处理方法可以应用于如图5或图6所示的驱动电路中。该驱动电路的数据处理方法的具体流程可以如下：\n\n[0049]101、获取时序参数。\n\n[0050]其中，该时序参数可以包括数据处理时长、初始化时长和最大计数值。\n\n[0051]其中，最大计数值可以为驱动电路200的控制器201所提供的数字量的个数。可以理解的是，在具体实施过程中，该控制器201可以对数字量进行编码，形成如图2所示的数字信号。其中，Count_all为最大计数值。\n\n[0052]102、基于所述时序参数进行数据处理，得到第一处理结果。\n\n[0053]其中，数据处理具体可以包括信号初始化处理和衰减处理。也即，步骤“基于所述时序参数进行数据处理，得到第一处理结果”可以包括：\n\n[0054]基于所述时序参数进行信号初始化处理和衰减处理，得到第一处理结果。\n\n[0055]具体的，可以基于所述数据处理时长、所述初始化时长和所述最大计数值进行信号初始化处理和衰减处理，得到第一处理结果。\n\n[0056]需要说明的是，在本申请的描述中，术语“第一”、“第二”、“第三”等仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”、“第三”的特征可以明示或者隐含地包括一个或者更多个所述特征。\n\n[0057]需要说明的是，数据处理的实质过程是控制器201的数据处理模块2012在定时模块2011的作用下，根据预设初始化开始时间、时序参数以及预设时间间隔向解码器202传输相应的数字信号。其中，该预设初始化开始时间可以根据实际情况设定。该预设初始化开始时间即是数据处理开始时间。一般情况下，在数据处理开始之前，控制器201会进行复位。因此，该预设初始化开始时间可以为控制器201的复位时间。\n\n[0058]在一些实施例中，步骤“基于所述数据处理时长、所述初始化时长和所述最大计数值进行信号初始化处理和衰减处理，得到第一处理结果”可以包括：\n\n[0059]根据预设初始化开始时间和所述初始化时长进行信号初始化处理，得到初始输入信号；\n\n[0060]根据所述预设初始化开始时间、所述初始化时长、所述数据处理时长和所述最大计数值对所述初始输入信号进行衰减处理，得到衰减信号；\n\n[0061]其中，所述初始输入信号和所述衰减信号为所述第一处理结果。\n\n[0062]具体可以如图3所示，图3中的初始化时长T_initial所对应的阶段为信号初始化处理，T_initial所对应的信号为初始输入信号。衰减处理时长T_decay所对应的阶段为衰减处理，T_decay所对应的信号为衰减信号。数据处理时长T_all所对应的阶段为数据处理，T_all所对应的信号为第一处理结果。由图3可知，初始输入信号和衰减信号是连续的，该第一处理结果包括初始输入信号和衰减信号是连续的。\n\n[0063]可以理解的是，数据处理时长等于初始化时长和衰减时长之和。因此，在已知数据处理时长和初始化时长的情况下，可以得到衰减时长。\n\n[0064]在一些实施例中，步骤“根据所述预设初始化开始时间、所述初始化时长、所述数据处理时长和所述最大计数值对所述初始输入信号进行衰减处理，得到衰减信号”可以包括：\n\n[0065]基于所述预设初始化开始时间、所述初始化时长和所述最大计数值对所述初始化输入信号进行第一子衰减处理，得到第一子衰减信号；\n\n[0066]根据所述预设初始化开始时间和所述数据处理时长确定所述数据处理的结束时间；\n\n[0067]将所述数据处理的结束时间与所述最大计数值的对应时间进行比较，以根据比较结果确定所述第一处理结果。\n\n[0068]可以理解的是，由于数据处理的过程实质上是指将至少最大计数值数量的数字量根据预设初始化开始时间、时序参数以及预设时间间隔输出。因此，该最大计数值的对应时间可以等于或小于数据处理的结束时间。其中，该数据处理的结束时间可以根据预设初始化开始时间和数据处理时长得到。\n\n[0069]可以理解的是，由于数字信号是由定时模块2011根据预设初始化开始时间、时序参数以及预设时间间隔向解码器202传输的。因此，在已知预设初始化开始时间和最大计数值的情况下，可以确定该最大计数值的对应时间。\n\n[0070]在一些实施例中，步骤“根据比较结果确定所述第一处理结果”可以包括：\n\n[0071]若所述数据处理的结束时间等于所述最大计数值的对应时间，则所述初始输入信号和所述第一子衰减信号为第一处理结果；\n\n[0072]若所述数据处理的结束时间大于所述最大计数值的对应时间，则对所述第一子衰减信号进行第二子衰减处理，得到第二子衰减信号，其中，所述初始输入信号、所述第一子衰减信号和所述第二子衰减信号为所述第一处理结果。\n\n[0073]需要说明的是，在一些实施例中，当数据处理的结束时间大于最大计数值的对应时间时，可以将后续输出的数字信号置零。即是，步骤“对所述第一子衰减信号进行第二子衰减处理，得到第二子衰减信号”可以包括包括：\n\n[0074]将所述第一子衰减信号置零，得到所述第二子衰减信号。\n\n[0075]在一些实施例中，步骤“所述基于所述预设初始化开始时间、所述初始化时长和所述最大计数值对所述初始化输入信号进行第一子衰减处理”可以包括：\n\n[0076]根据所述预设初始化开始时间和所述最大计数值确定所述最大计数值的对应时间；\n\n[0077]根据所述预设初始化开始时间、所述初始化时长和所述最大计数值的对应时间对所述初始化输入信号进行第一子衰减处理。\n\n[0078]需要说明的是，第一子衰减处理的结束时间等于最大计数值的对应时间。因此，在已知最大计数值的对应时间、预设初始化开始时间以及初始化时长的情况下，可以确定第一子衰减处理的开始时间。因此，可以根据第一子衰减处理的开始时间和最大计数值的对应时间对初始化输入信号进行第一子衰减处理。\n\n[0079]103、根据预设基准电压对所述第一处理结果进行解码，得到第二处理结果。\n\n[0080]具体的，解码器202可以根据预设基准电压对第一处理结果进行数模转换处理，以使数字信号转换为模拟信号，得到第二处理结果。具体的，可以将预设基准电压与第一处理结果进行比较，从而得到第二处理结果。\n\n[0081]其中，该预设基准电压可以是由电源集成电路(PMIC)提供给解码器202的。\n\n[0082]104、对所述第二处理结果进行放大处理，并将放大处理后的所述第二处理结果输出。\n\n[0083]其中，放大处理后的第二处理结果可以如图4所示。需要说明的是，由于通过解码器202输出的第二处理结果的驱动能力不足。因此，需要通过比例放大器203对该第二处理结果进行放大处理后再输出。可以理解的是，经过放大处理后的第二处理结果具有更高的驱动能力和负载能力。\n\n[0084]由上，本申请实施例提供的驱动电路的数据处理方法包括获取时序参数；基于所述时序参数进行数据处理，得到第一处理结果；根据预设基准电压对所述第一处理结果进行解码，得到第二处理结果；对所述第二处理结果进行放大处理，并将放大处理后的所述第二处理结果输出。通过本方案可以产生随时间变化的电压信号，通过该电压信号对MicroLED的发光状态进行调节，减少Micro LED随使用时间的增加而加大的损耗，从而避免MicroLED随着使用时间的增加而出现色偏的问题。\n\n[0085]请参阅图5，图5是本申请实施例提供的驱动电路的结构示意图。该驱动电路200可以包括控制器201、解码器202和比例放大器203。\n\n[0086]其中，控制器201可以用于获取时序参数，并基于所述时序参数进行数据处理，得到第一处理结果。\n\n[0087]其中，解码器202可以用于根据预设基准电压对所述第一处理结果进行解码，得到第二处理结果。\n\n[0088]其中，比例放大器203可以用于对所述第二处理结果进行放大处理，并将放大处理后的所述第二处理结果输出。\n\n[0089]如图6所示，在一些实施例中，控制器201可以包括定时模块2011和数据处理模块2012。\n\n[0090]其中，定时模块2011可以用于获取时序参数。\n\n[0091]其中，数据处理模块2012可以用于基于所述时序参数进行数据处理，得到第一处理结果。\n\n[0092]由上，本申请实施例提供的驱动电路200通过控制器201获取时序参数，并基于所述时序参数进行数据处理，得到第一处理结果。由解码器202可以用于根据预设基准电压对所述第一处理结果进行解码，得到第二处理结果。由比例放大器203可以用于对所述第二处理结果进行放大处理，并将放大处理后的所述第二处理结果输出。\n\n[0093]通过本方案可以产生随时间变化的电压信号，通过该电压信号对Micro LED的发光状态进行调节，减少Micro LED随使用时间的增加而加大的损耗，从而避免Micro LED随着使用时间的增加而出现色偏的问题。并且，由于比例放大器203可以隔离前后级电路的影响，因此，在对第二处理结果进行放大处理时可以保证放大后的第二处理结果的准确性。\n\n[0094]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0095]以上对本申请实施例所提供的一种驱动电路的数据处理方法和驱动电路进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种驱动电路的数据处理方法及驱动电路。\n\n背景技术\n\n[0002]微型发光二极管(Micro LED)由于具有高效率、低功耗和高信赖性，而逐渐受到市场的欢迎。现有的Micro LED大多采用转印技术形成在带有驱动电路的基板上，通过驱动电路带动Micro LED实现发光并显示。\n\n[0003]然而，采用目前的驱动电路的Micro LED在工作时，会随着使用时间的增加而出现色偏的问题。\n\n发明内容\n\n[0004]本申请实施例提供了一种驱动电路的数据处理方法及驱动电路，可以解决MicroLED随着使用时间的增加而出现色偏的问题。\n\n[0005]第一方面，本申请实施例提供了一种驱动电路的数据处理方法，包括：\n\n[0006]获取时序参数；\n\n[0007]基于所述时序参数进行数据处理，得到第一处理结果；\n\n[0008]根据预设基准电压对所述第一处理结果进行解码，得到第二处理结果；\n\n[0009]对所述第二处理结果进行放大处理，并将放大处理后的所述第二处理结果输出。\n\n[0010]在本申请实施例提供的驱动电路的数据处理方法中，所述基于所述时序参数进行数据处理，得到第一处理结果，包括：\n\n[0011]基于所述时序参数进行信号初始化处理和衰减处理，得到第一处理结果。\n\n[0012]在本申请实施例提供的驱动电路的数据处理方法中，所述时序参数包括数据处理时长、初始化时长和最大计数值；\n\n[0013]所述基于所述时序参数进行信号初始化处理和衰减处理，得到第一处理结果，包括：\n\n[0014]基于所述数据处理时长、所述初始化时长和所述最大计数值进行信号初始化处理和衰减处理，得到第一处理结果。\n\n[0015]在本申请实施例提供的驱动电路的数据处理方法中，所述基于所述数据处理时长、所述初始化时长和所述最大计数值进行信号初始化处理和衰减处理，得到第一处理结果，包括：\n\n[0016]根据预设初始化开始时间和所述初始化时长进行信号初始化处理，得到初始输入信号；\n\n[0017]根据所述预设初始化开始时间、所述初始化时长、所述数据处理时长和所述最大计数值对所述初始输入信号进行衰减处理，得到衰减信号；\n\n[0018]其中，所述初始输入信号和所述衰减信号为所述第一处理结果。\n\n[0019]在本申请实施例提供的驱动电路的数据处理方法中，所述根据所述预设初始化开始时间、所述初始化时长、所述数据处理时长和所述最大计数值对所述初始输入信号进行衰减处理，得到第一处理结果，包括：\n\n[0020]基于所述预设初始化开始时间、所述初始化时长和所述最大计数值对所述初始化输入信号进行第一子衰减处理，得到第一子衰减信号；\n\n[0021]根据所述预设初始化开始时间和所述数据处理时长确定所述数据处理的结束时间；\n\n[0022]将所述数据处理的结束时间与所述最大计数值的对应时间进行比较，以根据比较结果确定所述第一处理结果。\n\n[0023]在本申请实施例提供的驱动电路的数据处理方法中，所述根据比较结果确定所述第一处理结果，包括：\n\n[0024]若所述数据处理的结束时间等于所述最大计数值的对应时间，则所述初始输入信号和所述第一子衰减信号为第一处理结果；\n\n[0025]若所述数据处理的结束时间大于所述最大计数值的对应时间，则对所述第一子衰减信号进行第二子衰减处理，得到第二子衰减信号，其中，所述初始输入信号、所述第一子衰减信号和所述第二子衰减信号为所述第一处理结果。\n\n[0026]在本申请实施例提供的驱动电路的数据处理方法中，所述对所述第一子衰减信号进行第二子衰减处理，得到第二子衰减信号，包括：\n\n[0027]将所述第一子衰减信号置零，得到所述第二子衰减信号。\n\n[0028]在本申请实施例提供的驱动电路的数据处理方法中，所述基于所述预设初始化开始时间、所述初始化时长和所述最大计数值对所述初始化输入信号进行第一子衰减处理，包括：\n\n[0029]根据所述预设初始化开始时间和所述最大计数值确定所述最大计数值的对应时间；\n\n[0030]根据所述预设初始化开始时间、所述初始化时长和所述最大计数值的对应时间对所述初始化输入信号进行第一子衰减处理。\n\n[0031]第二方面，本申请实施例提供了一种驱动电路，包括：\n\n[0032]控制器，用于获取时序参数，并基于所述时序参数进行数据处理，得到第一处理结果；\n\n[0033]解码器，用于根据预设基准电压对所述第一处理结果进行解码，得到第二处理结果；\n\n[0034]比例放大器，用于对所述第二处理结果进行放大处理，并将放大处理后的所述第二处理结果输出。\n\n[0035]在本申请实施例提供的驱动电路中，所述控制器包括：\n\n[0036]定时模块，所述定时模块用于获取时序参数；\n\n[0037]数据处理模块，所述数据处理模块用于基于所述时序参数进行数据处理，得到第一处理结果。\n\n[0038]由上，本申请实施例提供的驱动电路的数据处理方法包括获取时序参数；基于所述时序参数进行数据处理，得到第一处理结果；根据预设基准电压对所述第一处理结果进行解码，得到第二处理结果；对所述第二处理结果进行放大处理，并将放大处理后的所述第二处理结果输出。通过本方案可以产生随时间变化的电压信号，从而解决MicroLED随着使用时间的增加而出现色偏的问题。\n\n附图说明\n\n[0039]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0040]图1是本申请实施例提供的驱动电路的数据处理方法的流程示意图。\n\n[0041]图2是本申请实施例提供的数字信号的结构示意图。\n\n[0042]图3是本申请实施例提供的第一处理结果的结构示意图。\n\n[0043]图4是本申请实施例提供的放大处理后的第二处理结果的结构示意图。\n\n[0044]图5是本申请实施例提供的驱动电路的结构示意图。\n\n[0045]图6是本申请实施例提供的驱动电路的另一结构示意图。\n\n具体实施方式\n\n[0046]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0047]本申请实施例提供了一种驱动电路的数据处理方法和驱动电路，以下将分别进行详细说明。\n\n[0048]请参阅图1，图1是本申请实施例提供的驱动电路的数据处理方法。该驱动电路的数据处理方法可以应用于如图5或图6所示的驱动电路中。该驱动电路的数据处理方法的具体流程可以如下：\n\n[0049]101、获取时序参数。\n\n[0050]其中，该时序参数可以包括数据处理时长、初始化时长和最大计数值。\n\n[0051]其中，最大计数值可以为驱动电路200的控制器201所提供的数字量的个数。可以理解的是，在具体实施过程中，该控制器201可以对数字量进行编码，形成如图2所示的数字信号。其中，Count_all为最大计数值。\n\n[0052]102、基于所述时序参数进行数据处理，得到第一处理结果。\n\n[0053]其中，数据处理具体可以包括信号初始化处理和衰减处理。也即，步骤“基于所述时序参数进行数据处理，得到第一处理结果”可以包括：\n\n[0054]基于所述时序参数进行信号初始化处理和衰减处理，得到第一处理结果。\n\n[0055]具体的，可以基于所述数据处理时长、所述初始化时长和所述最大计数值进行信号初始化处理和衰减处理，得到第一处理结果。\n\n[0056]需要说明的是，在本申请的描述中，术语“第一”、“第二”、“第三”等仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”、“第三”的特征可以明示或者隐含地包括一个或者更多个所述特征。\n\n[0057]需要说明的是，数据处理的实质过程是控制器201的数据处理模块2012在定时模块2011的作用下，根据预设初始化开始时间、时序参数以及预设时间间隔向解码器202传输相应的数字信号。其中，该预设初始化开始时间可以根据实际情况设定。该预设初始化开始时间即是数据处理开始时间。一般情况下，在数据处理开始之前，控制器201会进行复位。因此，该预设初始化开始时间可以为控制器201的复位时间。\n\n[0058]在一些实施例中，步骤“基于所述数据处理时长、所述初始化时长和所述最大计数值进行信号初始化处理和衰减处理，得到第一处理结果”可以包括：\n\n[0059]根据预设初始化开始时间和所述初始化时长进行信号初始化处理，得到初始输入信号；\n\n[0060]根据所述预设初始化开始时间、所述初始化时长、所述数据处理时长和所述最大计数值对所述初始输入信号进行衰减处理，得到衰减信号；\n\n[0061]其中，所述初始输入信号和所述衰减信号为所述第一处理结果。\n\n[0062]具体可以如图3所示，图3中的初始化时长T_initial所对应的阶段为信号初始化处理，T_initial所对应的信号为初始输入信号。衰减处理时长T_decay所对应的阶段为衰减处理，T_decay所对应的信号为衰减信号。数据处理时长T_all所对应的阶段为数据处理，T_all所对应的信号为第一处理结果。由图3可知，初始输入信号和衰减信号是连续的，该第一处理结果包括初始输入信号和衰减信号是连续的。\n\n[0063]可以理解的是，数据处理时长等于初始化时长和衰减时长之和。因此，在已知数据处理时长和初始化时长的情况下，可以得到衰减时长。\n\n[0064]在一些实施例中，步骤“根据所述预设初始化开始时间、所述初始化时长、所述数据处理时长和所述最大计数值对所述初始输入信号进行衰减处理，得到衰减信号”可以包括：\n\n[0065]基于所述预设初始化开始时间、所述初始化时长和所述最大计数值对所述初始化输入信号进行第一子衰减处理，得到第一子衰减信号；\n\n[0066]根据所述预设初始化开始时间和所述数据处理时长确定所述数据处理的结束时间；\n\n[0067]将所述数据处理的结束时间与所述最大计数值的对应时间进行比较，以根据比较结果确定所述第一处理结果。\n\n[0068]可以理解的是，由于数据处理的过程实质上是指将至少最大计数值数量的数字量根据预设初始化开始时间、时序参数以及预设时间间隔输出。因此，该最大计数值的对应时间可以等于或小于数据处理的结束时间。其中，该数据处理的结束时间可以根据预设初始化开始时间和数据处理时长得到。\n\n[0069]可以理解的是，由于数字信号是由定时模块2011根据预设初始化开始时间、时序参数以及预设时间间隔向解码器202传输的。因此，在已知预设初始化开始时间和最大计数值的情况下，可以确定该最大计数值的对应时间。\n\n[0070]在一些实施例中，步骤“根据比较结果确定所述第一处理结果”可以包括：\n\n[0071]若所述数据处理的结束时间等于所述最大计数值的对应时间，则所述初始输入信号和所述第一子衰减信号为第一处理结果；\n\n[0072]若所述数据处理的结束时间大于所述最大计数值的对应时间，则对所述第一子衰减信号进行第二子衰减处理，得到第二子衰减信号，其中，所述初始输入信号、所述第一子衰减信号和所述第二子衰减信号为所述第一处理结果。\n\n[0073]需要说明的是，在一些实施例中，当数据处理的结束时间大于最大计数值的对应时间时，可以将后续输出的数字信号置零。即是，步骤“对所述第一子衰减信号进行第二子衰减处理，得到第二子衰减信号”可以包括包括：\n\n[0074]将所述第一子衰减信号置零，得到所述第二子衰减信号。\n\n[0075]在一些实施例中，步骤“所述基于所述预设初始化开始时间、所述初始化时长和所述最大计数值对所述初始化输入信号进行第一子衰减处理”可以包括：\n\n[0076]根据所述预设初始化开始时间和所述最大计数值确定所述最大计数值的对应时间；\n\n[0077]根据所述预设初始化开始时间、所述初始化时长和所述最大计数值的对应时间对所述初始化输入信号进行第一子衰减处理。\n\n[0078]需要说明的是，第一子衰减处理的结束时间等于最大计数值的对应时间。因此，在已知最大计数值的对应时间、预设初始化开始时间以及初始化时长的情况下，可以确定第一子衰减处理的开始时间。因此，可以根据第一子衰减处理的开始时间和最大计数值的对应时间对初始化输入信号进行第一子衰减处理。\n\n[0079]103、根据预设基准电压对所述第一处理结果进行解码，得到第二处理结果。\n\n[0080]具体的，解码器202可以根据预设基准电压对第一处理结果进行数模转换处理，以使数字信号转换为模拟信号，得到第二处理结果。具体的，可以将预设基准电压与第一处理结果进行比较，从而得到第二处理结果。\n\n[0081]其中，该预设基准电压可以是由电源集成电路(PMIC)提供给解码器202的。\n\n[0082]104、对所述第二处理结果进行放大处理，并将放大处理后的所述第二处理结果输出。\n\n[0083]其中，放大处理后的第二处理结果可以如图4所示。需要说明的是，由于通过解码器202输出的第二处理结果的驱动能力不足。因此，需要通过比例放大器203对该第二处理结果进行放大处理后再输出。可以理解的是，经过放大处理后的第二处理结果具有更高的驱动能力和负载能力。\n\n[0084]由上，本申请实施例提供的驱动电路的数据处理方法包括获取时序参数；基于所述时序参数进行数据处理，得到第一处理结果；根据预设基准电压对所述第一处理结果进行解码，得到第二处理结果；对所述第二处理结果进行放大处理，并将放大处理后的所述第二处理结果输出。通过本方案可以产生随时间变化的电压信号，通过该电压信号对MicroLED的发光状态进行调节，减少Micro LED随使用时间的增加而加大的损耗，从而避免MicroLED随着使用时间的增加而出现色偏的问题。\n\n[0085]请参阅图5，图5是本申请实施例提供的驱动电路的结构示意图。该驱动电路200可以包括控制器201、解码器202和比例放大器203。\n\n[0086]其中，控制器201可以用于获取时序参数，并基于所述时序参数进行数据处理，得到第一处理结果。\n\n[0087]其中，解码器202可以用于根据预设基准电压对所述第一处理结果进行解码，得到第二处理结果。\n\n[0088]其中，比例放大器203可以用于对所述第二处理结果进行放大处理，并将放大处理后的所述第二处理结果输出。\n\n[0089]如图6所示，在一些实施例中，控制器201可以包括定时模块2011和数据处理模块2012。\n\n[0090]其中，定时模块2011可以用于获取时序参数。\n\n[0091]其中，数据处理模块2012可以用于基于所述时序参数进行数据处理，得到第一处理结果。\n\n[0092]由上，本申请实施例提供的驱动电路200通过控制器201获取时序参数，并基于所述时序参数进行数据处理，得到第一处理结果。由解码器202可以用于根据预设基准电压对所述第一处理结果进行解码，得到第二处理结果。由比例放大器203可以用于对所述第二处理结果进行放大处理，并将放大处理后的所述第二处理结果输出。\n\n[0093]通过本方案可以产生随时间变化的电压信号，通过该电压信号对Micro LED的发光状态进行调节，减少Micro LED随使用时间的增加而加大的损耗，从而避免Micro LED随着使用时间的增加而出现色偏的问题。并且，由于比例放大器203可以隔离前后级电路的影响，因此，在对第二处理结果进行放大处理时可以保证放大后的第二处理结果的准确性。\n\n[0094]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0095]以上对本申请实施例所提供的一种驱动电路的数据处理方法和驱动电路进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10799, 23853, '技术领域\n\n[0001]本申请涉及显示领域，特别涉及一种背光模组、显示面板及电子装置。\n\n背景技术\n\n[0002]随着显示技术的高速发展，mini-LED(微型发光二极管)作为LCD(Liquid crystaldisplays，液晶显示器)的背光源技术已经逐步发展。mini-LED是指封装大小在0.1-0.2mm的LED，又称为次毫米发光二极管和微型发光二极管。由于mini-LED的尺寸在百微米级别，无需克服巨量转移的技术门框，其量产具有可行性，可应用于大尺寸显示屏的背光。然而主动式mini-LED(AM mini-LED)一般是利用MOS管制作在PCB板上，这会导致LCD背光模组的厚度较厚，且其成本较为昂贵。\n\n发明内容\n\n[0003]本申请提供一种背光模组、显示面板及电子装置，以解决现有mini-LED(微型发光二极管)背光模组及显示面板厚度较厚和成本昂贵的问题。\n\n[0004]为解决上述问题，本申请提供的技术方案如下：\n\n[0005]本申请提供了一种背光模组，包括玻璃基底；多个驱动单元，多个所述驱动单元形成于所述玻璃基底上，每一所述驱动单元包括薄膜晶体管；多个微型发光二极管，多个所述微型发光二极管设于所述玻璃基底上，每一所述微型发光二极管包括第一电极和第二电极，所述第一电极和所述第二电极连接于对应的所述驱动单元，其中，所述驱动单元包括开关模块、驱动模块及存储模块，所述开关模块的一端分别连接于所述驱动模块和所述存储模块，所述驱动模块连接于所述微型发光二极管。\n\n[0006]在本申请的背光模组中，每一所述驱动单元还包VDD信号端和VSS信号端，所述开关模块包括开关薄膜晶体管，所述驱动模块包括驱动薄膜晶体管，所述存储模块包括存储电容，所述开关薄膜晶体管的栅极连接于扫描线，所述开关薄膜晶体管的源极连接于数据线，所述开关薄膜晶体管的漏极连接于所述存储电容的第一电容电极和所述驱动薄膜晶体管的栅极，所述驱动薄膜晶体管的源极连接于所述微型发光二极管的所述第二电极，所述驱动薄膜晶体管的漏极连接于所述VSS信号端，所述存储电容的第二电容电极连接于所述VSS信号端，所述微型发光二极管的所述第一电极连接于所述VDD信号端。\n\n[0007]在本申请的背光模组中，还包括第一金属层，设置于所述玻璃基底上，所述第一金属层包括所述驱动薄膜晶体管的所述栅极；栅极绝缘层，设置于所述玻璃基底和所述第一金属层上；有源层，设置于所述栅极绝缘层上并位于所述驱动薄膜晶体管的所述栅极的一侧；第二金属层，设置于所述栅极绝缘层和所述有源层上，所述第二金属层包括所述驱动薄膜晶体管的所述源极和所述漏极，所述驱动薄膜晶体管的所述源极和所述漏极连接于所述有源层；层间绝缘层，设置于所述第二金属层上，所述层间绝缘层设有通孔，所述微型发光二极管的所述第二电极通过所述通孔电性连接于所述驱动薄膜晶体管的所述漏极。\n\n[0008]在本申请的背光模组中,所述第一金属层还包括多个接触电极，每一所述驱动单元中所述接触电极包括第一接触电极和第二接触电极，所述第一接触电极的两端分别连接于所述VDD信号端和所述微型发光二极管的所述第一电极，所述第二接触电极的两端分别连接于所述微型发光二极管的所述第二电极和所述驱动薄膜晶体管的所述漏极；或\n\n[0009]所述第二金属层还包括多个接触电极，每一所述驱动单元中所述接触电极包括第一接触电极和第二接触电极，所述第一接触电极的两端分别连接于所述VDD信号端和所述微型发光二极管的所述第一电极，所述第二接触电极的两端分别连接于所述微型发光二极管的所述第二电极和所述驱动薄膜晶体管的所述漏极。\n\n[0010]在本申请的背光模组中,所述第一金属层或第二金属层为铜，所述有源层为非晶硅。\n\n[0011]在本申请的背光模组中,所述第一金属层还包括所述存储电容的所述第一电容电极，所述第二金属层还包括所述存储电容的所述第二电容电极。\n\n[0012]在本申请的背光模组中,在发光阶段的通电阶段内，所述开关薄膜晶体管和所述驱动薄膜晶体管打开，所述驱动薄膜晶体管打开使得所述VDD信号端的信号驱使所述微型发光二极管发光，在所述发光阶段的电压维持阶段内，所述开关薄膜晶体管关闭，所述存储电容维持所述驱动薄膜晶体管打开并使所述微型发光二极管维持发光；\n\n[0013]在擦黑阶段内，所述开关薄膜晶体管打开，所述数据线的信号通过所述开关薄膜晶体管传输至所述存储电容的第一电容电极和所述驱动薄膜晶体管的所述栅极，此时所述驱动薄膜晶体管关闭，所述存储电容复位。\n\n[0014]在本申请的背光模组中,所述VDD信号端的信号为高电位，所述VSS信号端的信号为低电位。\n\n[0015]本申请还提出了一种显示面板,包括上述所述的背光模组。\n\n[0016]本申请还提出了一种电子装置,包括上述所述的显示面板。\n\n[0017]有益效果：本申请通过在玻璃基底上制作包含TFT的驱动单元来驱动min-LED(微型发光二极管)，可以减小mini-LED(微型发光二极管)背光模组及显示面板的厚度，降低成本。\n\n附图说明\n\n[0018]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0019]图1为本申请实施例一的背光模组的结构示意图；\n\n[0020]图2为本申请实施例一的背光模组的结构示意图；\n\n[0021]图3为本申请实施例一/二/三/四的背光模组的电路结构示意图；\n\n[0022]图4为本申请实施例二的背光模组的结构示意图；\n\n[0023]图5为本申请实施例二的背光模组的结构示意图；\n\n[0024]图6为本申请实施例三的背光模组的结构示意图；\n\n[0025]图7为本申请实施例三的背光模组的结构示意图；\n\n[0026]图8为本申请实施例四的背光模组工作流程示意图；\n\n[0027]图9为本申请实施例五的显示面板的结构示意图；\n\n[0028]图10为本申请提出的电子装置的结构示意图。\n\n具体实施方式\n\n[0029]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0030]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0031]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0032]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0033]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0034]主动式mini-LED(AM mini-LED，主动式微型发光二极管)一般是利用MOS管制作在PCB板上，这会导致LCD背光的厚度较厚，且其成本较为昂贵。本申请提出了下列技术方案以解决上述技术问题。\n\n[0035]请参阅图1～图8，本申请提出了一种背光模组1000，包括玻璃基底11；多个驱动单元80，多个驱动单元80形成于玻璃基底11上，每一驱动单元80包括薄膜晶体管100；多个微型发光二极管20，多个微型发光二极管20设于玻璃基底11上，每一微型发光二极管20包括第一电极21和第二电极22，第一电极21和第二电极22连接于对应的驱动单元80，其中，驱动单元80包括开关模块6、驱动模块7及存储模块8，开关模块6的一端分别连接于驱动模块7和存储模块8，驱动模块7连接于微型发光二极管20。\n\n[0036]本申请通过在玻璃基底上制作包含薄膜晶体管(TFT)100的驱动单元80来驱动min-LED(微型发光二极管)，可以减小mini-LED(微型发光二极管)背光模组及显示面板的厚度，降低成本。\n\n[0037]现结合具体实施例对本申请的技术方案进行描述。\n\n[0038]实施例一\n\n[0039]在本实施例中，请参阅图1、图2，一种背光模组1000，其包括玻璃基底11；多个驱动单元80，多个驱动单元80形成于玻璃基底11上，每一驱动单元80包括薄膜晶体管100；多个微型发光二极管20，多个微型发光二极管20设于玻璃基底11上，每一微型发光二极管20包括第一电极21和第二电极22，第一电极21和第二电极22连接于对应的驱动单元80。通过在玻璃基底上制作包含薄膜晶体管(TFT)100的驱动单元80来驱动min-LED(微型发光二极管)20，可以减小mini-LED(微型发光二极管)背光模组1000及显示面板的厚度，降低成本。\n\n[0040]在本实施例中，请参阅图3，示意了本实施例的电路结构图，每一驱动单元80包括开关模块6、驱动模块7及存储模块8，开关模块6的一端分别连接于驱动模块7和存储模块8，驱动模块7连接于微型发光二极管20。具体的，每一驱动单元80还包括VDD信号端和VSS信号端，开关模块6包括开关薄膜晶体管T1，驱动模块7包括驱动薄膜晶体管T2，存储模块8包括存储电容C，开关薄膜晶体管T1的栅极连接于扫描线Scan，开关薄膜晶体管T1的源极连接于数据线Data，开关薄膜晶体管T1的漏极连接于存储电容C的第一电容电极c1和驱动薄膜晶体管T2的栅极，驱动薄膜晶体管T2的源极连接于mini-LED(微型发光二极管)M的第二电极，驱动薄膜晶体管T2的漏极连接于VSS信号端，存储电容的第二电容电极c2连接于VSS信号端，mini-LED(微型发光二极管)M的第一电极连接于VDD信号端。通过此开关薄膜晶体管(TFT)T1、驱动薄膜晶体管(TFT)T2、存储电容构C、和各信号端构成的驱动单元可以驱动mini-LED(微型发光二极管)M进行发光，从而为背光模组提供光源。需要说明的是：此处开关薄膜晶体管T1的源极和漏极可以互换，驱动薄膜晶体管T2的源极和漏极可以互换，例如，开关薄膜晶体管T1的漏极连接于数据线Data，开关薄膜晶体管T1的源极连接于存储电容C的第一电容电极c1和驱动薄膜晶体管T2的栅极。需要说明的是：微型发光二极管在图3中可以用M或20表示。\n\n[0041]如图1、图2、图3所示，图中示意了：薄膜晶体管(TFT)100，薄膜晶体管(TFT)100包括源极151(或者152)、漏极152(或者151)、栅极121、有源层14，TFT100还包括设于有栅极121与有源层14之间栅极绝缘层13，同时源极151(或者152)、漏极152(或者151)表面还可以覆盖层间绝缘层16，图1、图2中薄膜晶体管(TFT)100可以为图3中开关薄膜晶体管T1或驱动薄膜晶体管T2之一，例如当薄膜晶体管(TFT)100为驱动薄膜晶体管T2时，开关薄膜晶体管T1位于驱动薄膜晶体管T2在图中未示意的一傍，开关薄膜晶体管T1也包括源极151(或者152)、漏极152(或者151)、栅极121、有源层14、栅极绝缘层13。\n\n[0042]如图1、图2、图3所示，图中示意了：电容200，电容200包括第一电容电极122(或者153)、第二电容电极153(或者122)、以及第一电容电极122(或者153)与第二电容电极153(或者122)之间的绝缘层，图1、图2中电容200即为图3电路中的存储电容C，图1、图2中第一电容电极122(或者153)等同于图3电路中的第一电容电极c1，图1、图2中第二电容电极153(或者122)等同于图3电路中的第二电容电极c2，此处第一电容电极122(或者153)与第二电容电极153(或者122)之间的绝缘层为栅极绝缘层13。需要说明的是，在图1、图2之中，第一电容电极可以为122或者153之一，那么第二电容电极为122和153之中的另外一个。\n\n[0043]如图1、图2、图3所示，图中示意了：微型发光二极管，微型发光二极管在图1、图2中用20表示，微型发光二极管在图3中也可以用M或20表示。\n\n[0044]如图1、图2、图3所示，背光模组1000还包括接触电极300，接触电极300包括第一接触电极123和第二接触电极124。\n\n[0045]在本实施例中，请参继续阅图1、图2，背光模组1000还包括第一金属层12，设置于玻璃基底11上，第一金属层12包括驱动薄膜晶体管100(T2)的栅极121；栅极绝缘层13，设置于玻璃基底11和所述第一金属层12上；有源层14，设置于栅极绝缘层13上并位于驱动薄膜晶体管100的栅极121的一侧；第二金属层15，设置于栅极绝缘层13和有源层14上，第二金属层15包括驱动薄膜晶体管100的源极151(或者152)和所述漏极152(或者151)，驱动薄膜晶体管100的源极151(或者152)和漏极152(或者151)连接于有源层14；层间绝缘层16，设置于第二金属层上15，层间绝缘层16设有通孔161～162，微型发光二极管20的第二电极22通过通孔162电性连接于驱动薄膜晶体管100的漏极152(或者151)。需要说明的是，此时以薄膜晶体管100作为驱动薄膜晶体管T2进行说明，在一些实施例和实施情况中薄膜晶体管100还可以为开关薄膜晶体管T1，不限于此。\n\n[0046]在本实施例中，请参继续阅图1、图2、图3，第一金属层12还包括多个接触电极300，每一驱动单元80中的接触电极300包括第一接触电极123和第二接触电极124，第一接触电极123的两端分别连接于VDD信号端和微型发光二极管20(M)的第一电极21，第二接触电极124的两端分别连接于微型发光二极管20(M)的第二电极22和驱动薄膜晶体管(T2)100的漏极152(或者151)，即微型发光二极管20(M)第一电极21是通过第一接触电极123连接于VDD信号端的，即微型发光二极管20(M)第二电极22是通过第二接触电极124连接于驱动薄膜晶体管(T2)100的漏极152(或者151)的。在本实施例中接触电极300是通过第一金属层12形成。其中微型发光二极管20(M)第一电极21与第一接触电极123通过第一连接部31电性连接，微型发光二极管20(M)第二电极22与第二接触电极124通过第二连接部32电性连接，第一连接部31、第二连接部32可以为锡膏等材料，但不限于此。需要说明的是，此时以薄膜晶体管100作为驱动薄膜晶体管T2进行说明，在一些实施例和实施情况中薄膜晶体管100还可以为开关薄膜晶体管T1，不限于此。\n\n[0047]实施例二\n\n[0048]在本实施例中，请参阅图3、图4、图5，与实施例一的区别在于接触电极300为第二金属层15制作。\n\n[0049]具体的，第二金属层15还包括多个接触电极300，每一驱动单元80中的接触电极300包括第一接触电极154和第二接触电极155，第一接触电极154的两端分别连接于VDD信号端和微型发光二极管20(M)的第一电极21，第二接触电极155的两端分别连接于微型发光二极管20(M)的第二电极22和驱动薄膜晶体管(T2)100的漏极152(或者151)，即微型发光二极管20(M)第一电极21是通过第一接触电极154连接于VDD信号端的，即微型发光二极管20(M)第二电极22是通过第二接触电极155连接于驱动薄膜晶体管(T2)100的漏极152(或者151)的。在本实施例中接触电极300是通过第二金属层15形成。其中微型发光二极管20(M)第一电极21与第一接触电极154通过第一连接部31电性连接，微型发光二极管20(M)第二电极22与第二接触电极155通过第二连接部32电性连接，第一连接部31、第二连接部32可以为锡膏等材料，但不限于此。需要说明的是，此时以薄膜晶体管100作为驱动薄膜晶体管T2进行说明，在一些实施例和实施情况中薄膜晶体管100还可以为开关薄膜晶体管T1，不限于此。\n\n[0050]实施例三\n\n[0051]在本实施例中，请参阅图3、图6、图7，与实施例一、二的区别在于层间绝缘层16上还设有ITO层。\n\n[0052]在本实施例中，请参阅图6、图7，一种背光模组1000，其包括玻璃基底11；多个驱动单元80，多个驱动单元80形成于玻璃基底11上，每一驱动单元80包括薄膜晶体管100；多个微型发光二极管20，多个微型发光二极管20设于玻璃基底11上，每一微型发光二极管20包括第一电极21和第二电极22，第一电极21和第二电极22连接于对应的驱动单元80。通过在玻璃基底上制作包含薄膜晶体管(TFT)100的驱动单元80来驱动min-LED(微型发光二极管)20，可以减小mini-LED(微型发光二极管)背光模组1000及显示面板的厚度，降低成本。\n\n[0053]如图3、图6、图7所示，图中示意了：薄膜晶体管(TFT)100，薄膜晶体管(TFT)100包括源极151(或者152)、漏极152(或者151)、栅极121、有源层14，TFT100还包括设于有栅极121与有源层14之间栅极绝缘层13，同时源极151(或者152)、漏极152(或者151)表面还可以覆盖层间绝缘层16，图1、图2中薄膜晶体管(TFT)100可以为图3中开关薄膜晶体管T1或驱动薄膜晶体管T2之一，例如当薄膜晶体管(TFT)100为驱动薄膜晶体管T2时，开关薄膜晶体管T1位于驱动薄膜晶体管T2位于图中未示意的一侧，开关薄膜晶体管T1也包括源极151(或者152)、漏极152(或者151)、栅极121、有源层14、栅极绝缘层13。\n\n[0054]如图3、图6、图7所示，图中示意了：电容200，电容200包括第一电容电极122(或者153)、第二电容电极153(或者122)、以及第一电容电极122(或者153)与第二电容电极153(或者122)之间的绝缘层，图6、图7中电容200即为图3电路中的存储电容C，图6、图7中第一电容电极122(或者153)等同于图3电路中的第一电容电极c1，图7、图8中第二电容电极153(或者122)等同于图3电路中的第二电容电极c2，此处第一电容电极122(或者153)与第二电容电极153(或者122)之间的绝缘层为栅极绝缘层13。需要说明的是，在图6、图7之中，第一电容电极可以为122或者153之一，那么第二电容电极为122和153之中的另外一个。\n\n[0055]如图3、图6、图7所示，背光模组1000还包括接触电极300，接触电极300包括第一接触电极123和第二接触电极124；或者接触电极300包括第一接触电极154和第二接触电极155。\n\n[0056]在本实施例中，请参继续阅图6、图7，背光模组1000还包括第一金属层12，设置于玻璃基底11上，第一金属层12包括驱动薄膜晶体管100(T2)的栅极121；栅极绝缘层13，设置于玻璃基底11和所述第一金属层12上；有源层14，设置于栅极绝缘层13上并位于驱动薄膜晶体管100的栅极121的一侧；第二金属层15，设置于栅极绝缘层13和有源层14上，第二金属层15包括驱动薄膜晶体管100的源极151(或者152)和所述漏极152(或者151)，驱动薄膜晶体管100的源极151(或者152)和漏极152(或者151)连接于有源层14；层间绝缘层16，设置于第二金属层上15，层间绝缘层16设有通孔161～162，微型发光二极管20的第二电极22通过通孔162电性连接于驱动薄膜晶体管100的漏极152(或者151)；ITO层17设于层间绝缘层16上，ITO层16可以作为连接电极连接第一金属层12与第二金属层15上的走线或电极，例如数据线Data或VDD信号线包括第一金属层12的第一子部125和第二金属层15的第二子部154，ITO层17可以作为连接电极穿过层间绝缘层16上的通孔连接第一金属层12的第一子部125和第二金属层15的第二子部154，以减小数据线Data或VDD信号线的电阻值。需要说明的是，此时以薄膜晶体管100作为驱动薄膜晶体管T2进行说明，在一些实施例和实施情况中薄膜晶体管100还可以为开关薄膜晶体管T1，不限于此。\n\n[0057]基于实施一、二、三，第一金属层12或/和第二金属层15可以为铜(Cu)制作，有源层14为非晶硅，但并不限于此，例如：第一金属层12或第二金属层15为Mo/AL/Mo材料与结构，有源层为金属氧化物(IGZO)等。\n\n[0058]基于实施一、二、三，薄膜晶体管100的结构不限于底栅结构，还可以为顶栅、侧栅结构，不限于此。\n\n[0059]基于实施一、二、三，第一金属层12还包括存储电容200(存储电容C)的第一电容电极122(c1或c2之一)，第二金属层15还包括存储电容200(存储电容C)的第二电容电极153(c1或c2之一)。\n\n[0060]基于实施一、二、三，背光模组还可以选择性的包括扫描线Scan以供给驱动单元扫描信号，选择性的包括数据线Data以供给驱动单元数据信号，选择性的包括VDD走线以供给驱动单元VDD信号或者用作VDD信号端，选择性的包括VSS走线以供给驱动单元VSS信号或者用作VSS信号端。扫描线Scan、数据线Data、VDD走线或VDD信号端、VSS走线或VSS信号端可以选择性的使用第一金属层12和第二金属层15其中之一或者其中之二制作，不限于此。\n\n[0061]基于实施一、二、三，存储电容200(存储电容C)可以为第一金属层12和第二金属层15形成了第一电容电极(c1)和第二电容电极(c2)。\n\n[0062]实施例四\n\n[0063]基于上述实施例，对背光模组的工作流程和原理进行举例说明。\n\n[0064]在本实施例中，请参阅图3、图8，图3为上述实施例中背光模组驱动mini-LED(微型发光二极管)的电路结构图，图8为图3电路驱动mini-LED(微型发光二极管)发光的工作流程图。\n\n[0065]图3示意了本实施例的电路结构图，每一驱动单元80包括开关模块6、驱动模块7及存储模块8，开关模块6的一端分别连接于驱动模块7和存储模块8，驱动模块7连接于微型发光二极管20。具体的，每一驱动单元80还包括VDD信号端和VSS信号端，开关模块6包括开关薄膜晶体管T1，驱动模块7包括驱动薄膜晶体管T2，存储模块8包括存储电容C，开关薄膜晶体管T1的栅极连接于扫描线Scan，开关薄膜晶体管T1的源极连接于数据线Data，开关薄膜晶体管T1的漏极连接于存储电容C的第一电容电极c1和驱动薄膜晶体管T2的栅极，驱动薄膜晶体管T2的源极连接于mini-LED(微型发光二极管)M的第二电极，驱动薄膜晶体管T2的漏极连接于VSS信号端，存储电容的第二电容电极c2连接于VSS信号端，mini-LED(微型发光二极管)M的第一电极连接于VDD信号端。通过此薄膜晶体管与电容等结构构成的电路可以驱动mini-LED(微型发光二极管)M进行发光，从而为背光模组提供光源。需要说明的是：此处开关薄膜晶体管T1的源极和漏极可以互换，驱动薄膜晶体管T2的源极和漏极可以互换，例如，开关薄膜晶体管T1的漏极连接于数据线Data，开关薄膜晶体管T1的源极连接于存储电容C的第一电容电极c1和驱动薄膜晶体管T2的栅极。需要说明的是：如图3所示，图3中示意了微型发光二极管，微型发光二极管可以用M或20表示。背光模组1000工作时分为发光阶段S1和擦黑阶段S2，例如mini-LED(微型发光二极管)M工作时为发光阶段S1和擦黑阶段S2交替进行，在发光阶段S1内mini-LED(微型发光二极管)M发出光线，在擦黑阶段S2内mini-LED(微型发光二极管)M不发出光线。\n\n[0066]具体的，发光阶段S1可以包括通电阶段S11和电压维持阶段S12，在通电阶段S11内驱动单元输入信号后mini-LED(微型发光二极管)M开始工作发出光线，在电压维持阶段S12内通过存储电容C维持mini-LED(微型发光二极管)M持续工作发出光线。\n\n[0067]具体的，在发光阶段S1的通电阶段S11内，开关薄膜晶体管T1和驱动薄膜晶体管T2打开，驱动薄膜晶体管T2打开使得所述VDD信号端的信号驱使mini-LED(微型发光二极管)M发光，在发光阶段S1的电压维持阶段S12内，开关薄膜晶体管T1关闭，存储电容C维持驱动薄膜晶体管T2打开并使mini-LED(微型发光二极管)M维持发光。\n\n[0068]在擦黑阶段S2内，开关薄膜晶体管T1打开，数据线Data的信号通过开关薄膜晶体管T1传输至存储电容C的第一电容电极c1和驱动薄膜晶体管T2的栅极，此时驱动薄膜晶体管T2关闭，存储电容C复位，mini-LED(微型发光二极管)M不工作、不发出光线。\n\n[0069]进一步详细的描述背光模组的工作过程，在一些实施例和实施情况中，VDD信号端一直供给高电位(例如20V)、VSS信号端一直供给低电位(例如0V)。背光模组的工作阶段主要分为两个阶段：发光阶段S1和擦黑阶段S2。背光模组的工作阶段实现方式为：扫描线Scan和数据线data同时供给各自对应的高电位，此时开关薄膜晶体管T1打开，将数据线Data的高电位写入A点(A点电性联通开关薄膜晶体管T1的漏极、驱动薄膜晶体管T2的栅极、以及存储电容C的第一电容电极c1)，因为A点高电位，所以驱动薄膜晶体管T2打开，mini-LED(微型发光二极管)M导通，mini-LED(微型发光二极管)M可以发光，此后扫描线Scan和数据线Data关闭，因A点和VSS信号端之间有一个存储电容C，所以A点的电位可以一直维持住，驱动薄膜晶体管T2持续打开，mini-LED(微型发光二极管)M持续发光。擦黑阶段S2：扫描线Scan的信号供给对应的高电位，数据线Data的信号供给对应的低电位，这样A点写入低电位，开关薄膜晶体管T1关闭，mini-LED(微型发光二极管)M回路没有电流，mini-LED(微型发光二极管)M擦黑，即mini-LED(微型发光二极管)M不发光。\n\n[0070]基于上述实施例，需要说明的是薄膜晶体管的源极、漏极是可以互换的，例如在图3示意的电路结构图中，每一驱动单元包括薄膜晶体管、存储电容C、VDD信号端、VSS信号端、扫描线Scan、数据线Data，薄膜晶体管包括开关薄膜晶体管T1和驱动薄膜晶体管T2，开关薄膜晶体管T1的栅极连接于扫描线Scan，开关薄膜晶体管T1的漏连接于数据线Data，开关薄膜晶体管T1的源极连接于存储电容C的第一电容电极c1和驱动薄膜晶体管T2的栅极，驱动薄膜晶体管T2的漏极连接于mini-LED(微型发光二极管)M的第二电极，驱动薄膜晶体管T2的源极连接于VSS信号端，存储电容的第二电容电极c2连接于VSS信号端，mini-LED(微型发光二极管)M的第一电极连接于VDD信号端。通过此薄膜晶体管与电容等结构构成的电路可以驱动mini-LED(微型发光二极管)M进行发光，从而为背光模组提供光源。\n\n[0071]基于上述实施例，需要说明的是开关薄膜晶体管T1和驱动薄膜晶体管T2的开关电压信号由开关薄膜晶体管T1和驱动薄膜晶体管T2之内有源层(半导体层)的类型和特性决定，在一些实施例中，两者的栅极电压分别为高电位时开关薄膜晶体管T1和驱动薄膜晶体管T2打开，两者的栅极电压分别为低电位时开关薄膜晶体管T1和驱动薄膜晶体管T2关闭；在一些实施例中，两者的栅极电压分别为低电位时开关薄膜晶体管T1和驱动薄膜晶体管T2打开，两者的栅极电压分别为高电位时开关薄膜晶体管T1和驱动薄膜晶体管T2关闭。\n\n[0072]实施例五\n\n[0073]在本实施例中，请参阅图9，本申请还提出了一种显示面板3000，显示面板3000包括上述实施例中的背光模组1000。例在如图9中，液晶盒2000设置在背光模组1000上，背光模组1000为显示面板3000提供光源进行显示。\n\n[0074]请参阅图10，本申请还提出了一种电子装置5000，电子装置包括上述显示面板3000，电子装置5000可以为电视、电脑等，但不限于此，电子装置5000还可以包括外壳等其他部件4000。\n\n[0075]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0076]以上对本申请实施例所提供的一种显示面板及显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示领域，特别涉及一种背光模组、显示面板及电子装置。\n\n背景技术\n\n[0002]随着显示技术的高速发展，mini-LED(微型发光二极管)作为LCD(Liquid crystaldisplays，液晶显示器)的背光源技术已经逐步发展。mini-LED是指封装大小在0.1-0.2mm的LED，又称为次毫米发光二极管和微型发光二极管。由于mini-LED的尺寸在百微米级别，无需克服巨量转移的技术门框，其量产具有可行性，可应用于大尺寸显示屏的背光。然而主动式mini-LED(AM mini-LED)一般是利用MOS管制作在PCB板上，这会导致LCD背光模组的厚度较厚，且其成本较为昂贵。\n\n发明内容\n\n[0003]本申请提供一种背光模组、显示面板及电子装置，以解决现有mini-LED(微型发光二极管)背光模组及显示面板厚度较厚和成本昂贵的问题。\n\n[0004]为解决上述问题，本申请提供的技术方案如下：\n\n[0005]本申请提供了一种背光模组，包括玻璃基底；多个驱动单元，多个所述驱动单元形成于所述玻璃基底上，每一所述驱动单元包括薄膜晶体管；多个微型发光二极管，多个所述微型发光二极管设于所述玻璃基底上，每一所述微型发光二极管包括第一电极和第二电极，所述第一电极和所述第二电极连接于对应的所述驱动单元，其中，所述驱动单元包括开关模块、驱动模块及存储模块，所述开关模块的一端分别连接于所述驱动模块和所述存储模块，所述驱动模块连接于所述微型发光二极管。\n\n[0006]在本申请的背光模组中，每一所述驱动单元还包VDD信号端和VSS信号端，所述开关模块包括开关薄膜晶体管，所述驱动模块包括驱动薄膜晶体管，所述存储模块包括存储电容，所述开关薄膜晶体管的栅极连接于扫描线，所述开关薄膜晶体管的源极连接于数据线，所述开关薄膜晶体管的漏极连接于所述存储电容的第一电容电极和所述驱动薄膜晶体管的栅极，所述驱动薄膜晶体管的源极连接于所述微型发光二极管的所述第二电极，所述驱动薄膜晶体管的漏极连接于所述VSS信号端，所述存储电容的第二电容电极连接于所述VSS信号端，所述微型发光二极管的所述第一电极连接于所述VDD信号端。\n\n[0007]在本申请的背光模组中，还包括第一金属层，设置于所述玻璃基底上，所述第一金属层包括所述驱动薄膜晶体管的所述栅极；栅极绝缘层，设置于所述玻璃基底和所述第一金属层上；有源层，设置于所述栅极绝缘层上并位于所述驱动薄膜晶体管的所述栅极的一侧；第二金属层，设置于所述栅极绝缘层和所述有源层上，所述第二金属层包括所述驱动薄膜晶体管的所述源极和所述漏极，所述驱动薄膜晶体管的所述源极和所述漏极连接于所述有源层；层间绝缘层，设置于所述第二金属层上，所述层间绝缘层设有通孔，所述微型发光二极管的所述第二电极通过所述通孔电性连接于所述驱动薄膜晶体管的所述漏极。\n\n[0008]在本申请的背光模组中,所述第一金属层还包括多个接触电极，每一所述驱动单元中所述接触电极包括第一接触电极和第二接触电极，所述第一接触电极的两端分别连接于所述VDD信号端和所述微型发光二极管的所述第一电极，所述第二接触电极的两端分别连接于所述微型发光二极管的所述第二电极和所述驱动薄膜晶体管的所述漏极；或\n\n[0009]所述第二金属层还包括多个接触电极，每一所述驱动单元中所述接触电极包括第一接触电极和第二接触电极，所述第一接触电极的两端分别连接于所述VDD信号端和所述微型发光二极管的所述第一电极，所述第二接触电极的两端分别连接于所述微型发光二极管的所述第二电极和所述驱动薄膜晶体管的所述漏极。\n\n[0010]在本申请的背光模组中,所述第一金属层或第二金属层为铜，所述有源层为非晶硅。\n\n[0011]在本申请的背光模组中,所述第一金属层还包括所述存储电容的所述第一电容电极，所述第二金属层还包括所述存储电容的所述第二电容电极。\n\n[0012]在本申请的背光模组中,在发光阶段的通电阶段内，所述开关薄膜晶体管和所述驱动薄膜晶体管打开，所述驱动薄膜晶体管打开使得所述VDD信号端的信号驱使所述微型发光二极管发光，在所述发光阶段的电压维持阶段内，所述开关薄膜晶体管关闭，所述存储电容维持所述驱动薄膜晶体管打开并使所述微型发光二极管维持发光；\n\n[0013]在擦黑阶段内，所述开关薄膜晶体管打开，所述数据线的信号通过所述开关薄膜晶体管传输至所述存储电容的第一电容电极和所述驱动薄膜晶体管的所述栅极，此时所述驱动薄膜晶体管关闭，所述存储电容复位。\n\n[0014]在本申请的背光模组中,所述VDD信号端的信号为高电位，所述VSS信号端的信号为低电位。\n\n[0015]本申请还提出了一种显示面板,包括上述所述的背光模组。\n\n[0016]本申请还提出了一种电子装置,包括上述所述的显示面板。\n\n[0017]有益效果：本申请通过在玻璃基底上制作包含TFT的驱动单元来驱动min-LED(微型发光二极管)，可以减小mini-LED(微型发光二极管)背光模组及显示面板的厚度，降低成本。\n\n附图说明\n\n[0018]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0019]图1为本申请实施例一的背光模组的结构示意图；\n\n[0020]图2为本申请实施例一的背光模组的结构示意图；\n\n[0021]图3为本申请实施例一/二/三/四的背光模组的电路结构示意图；\n\n[0022]图4为本申请实施例二的背光模组的结构示意图；\n\n[0023]图5为本申请实施例二的背光模组的结构示意图；\n\n[0024]图6为本申请实施例三的背光模组的结构示意图；\n\n[0025]图7为本申请实施例三的背光模组的结构示意图；\n\n[0026]图8为本申请实施例四的背光模组工作流程示意图；\n\n[0027]图9为本申请实施例五的显示面板的结构示意图；\n\n[0028]图10为本申请提出的电子装置的结构示意图。\n\n具体实施方式\n\n[0029]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0030]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0031]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0032]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0033]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0034]主动式mini-LED(AM mini-LED，主动式微型发光二极管)一般是利用MOS管制作在PCB板上，这会导致LCD背光的厚度较厚，且其成本较为昂贵。本申请提出了下列技术方案以解决上述技术问题。\n\n[0035]请参阅图1～图8，本申请提出了一种背光模组1000，包括玻璃基底11；多个驱动单元80，多个驱动单元80形成于玻璃基底11上，每一驱动单元80包括薄膜晶体管100；多个微型发光二极管20，多个微型发光二极管20设于玻璃基底11上，每一微型发光二极管20包括第一电极21和第二电极22，第一电极21和第二电极22连接于对应的驱动单元80，其中，驱动单元80包括开关模块6、驱动模块7及存储模块8，开关模块6的一端分别连接于驱动模块7和存储模块8，驱动模块7连接于微型发光二极管20。\n\n[0036]本申请通过在玻璃基底上制作包含薄膜晶体管(TFT)100的驱动单元80来驱动min-LED(微型发光二极管)，可以减小mini-LED(微型发光二极管)背光模组及显示面板的厚度，降低成本。\n\n[0037]现结合具体实施例对本申请的技术方案进行描述。\n\n[0038]实施例一\n\n[0039]在本实施例中，请参阅图1、图2，一种背光模组1000，其包括玻璃基底11；多个驱动单元80，多个驱动单元80形成于玻璃基底11上，每一驱动单元80包括薄膜晶体管100；多个微型发光二极管20，多个微型发光二极管20设于玻璃基底11上，每一微型发光二极管20包括第一电极21和第二电极22，第一电极21和第二电极22连接于对应的驱动单元80。通过在玻璃基底上制作包含薄膜晶体管(TFT)100的驱动单元80来驱动min-LED(微型发光二极管)20，可以减小mini-LED(微型发光二极管)背光模组1000及显示面板的厚度，降低成本。\n\n[0040]在本实施例中，请参阅图3，示意了本实施例的电路结构图，每一驱动单元80包括开关模块6、驱动模块7及存储模块8，开关模块6的一端分别连接于驱动模块7和存储模块8，驱动模块7连接于微型发光二极管20。具体的，每一驱动单元80还包括VDD信号端和VSS信号端，开关模块6包括开关薄膜晶体管T1，驱动模块7包括驱动薄膜晶体管T2，存储模块8包括存储电容C，开关薄膜晶体管T1的栅极连接于扫描线Scan，开关薄膜晶体管T1的源极连接于数据线Data，开关薄膜晶体管T1的漏极连接于存储电容C的第一电容电极c1和驱动薄膜晶体管T2的栅极，驱动薄膜晶体管T2的源极连接于mini-LED(微型发光二极管)M的第二电极，驱动薄膜晶体管T2的漏极连接于VSS信号端，存储电容的第二电容电极c2连接于VSS信号端，mini-LED(微型发光二极管)M的第一电极连接于VDD信号端。通过此开关薄膜晶体管(TFT)T1、驱动薄膜晶体管(TFT)T2、存储电容构C、和各信号端构成的驱动单元可以驱动mini-LED(微型发光二极管)M进行发光，从而为背光模组提供光源。需要说明的是：此处开关薄膜晶体管T1的源极和漏极可以互换，驱动薄膜晶体管T2的源极和漏极可以互换，例如，开关薄膜晶体管T1的漏极连接于数据线Data，开关薄膜晶体管T1的源极连接于存储电容C的第一电容电极c1和驱动薄膜晶体管T2的栅极。需要说明的是：微型发光二极管在图3中可以用M或20表示。\n\n[0041]如图1、图2、图3所示，图中示意了：薄膜晶体管(TFT)100，薄膜晶体管(TFT)100包括源极151(或者152)、漏极152(或者151)、栅极121、有源层14，TFT100还包括设于有栅极121与有源层14之间栅极绝缘层13，同时源极151(或者152)、漏极152(或者151)表面还可以覆盖层间绝缘层16，图1、图2中薄膜晶体管(TFT)100可以为图3中开关薄膜晶体管T1或驱动薄膜晶体管T2之一，例如当薄膜晶体管(TFT)100为驱动薄膜晶体管T2时，开关薄膜晶体管T1位于驱动薄膜晶体管T2在图中未示意的一傍，开关薄膜晶体管T1也包括源极151(或者152)、漏极152(或者151)、栅极121、有源层14、栅极绝缘层13。\n\n[0042]如图1、图2、图3所示，图中示意了：电容200，电容200包括第一电容电极122(或者153)、第二电容电极153(或者122)、以及第一电容电极122(或者153)与第二电容电极153(或者122)之间的绝缘层，图1、图2中电容200即为图3电路中的存储电容C，图1、图2中第一电容电极122(或者153)等同于图3电路中的第一电容电极c1，图1、图2中第二电容电极153(或者122)等同于图3电路中的第二电容电极c2，此处第一电容电极122(或者153)与第二电容电极153(或者122)之间的绝缘层为栅极绝缘层13。需要说明的是，在图1、图2之中，第一电容电极可以为122或者153之一，那么第二电容电极为122和153之中的另外一个。\n\n[0043]如图1、图2、图3所示，图中示意了：微型发光二极管，微型发光二极管在图1、图2中用20表示，微型发光二极管在图3中也可以用M或20表示。\n\n[0044]如图1、图2、图3所示，背光模组1000还包括接触电极300，接触电极300包括第一接触电极123和第二接触电极124。\n\n[0045]在本实施例中，请参继续阅图1、图2，背光模组1000还包括第一金属层12，设置于玻璃基底11上，第一金属层12包括驱动薄膜晶体管100(T2)的栅极121；栅极绝缘层13，设置于玻璃基底11和所述第一金属层12上；有源层14，设置于栅极绝缘层13上并位于驱动薄膜晶体管100的栅极121的一侧；第二金属层15，设置于栅极绝缘层13和有源层14上，第二金属层15包括驱动薄膜晶体管100的源极151(或者152)和所述漏极152(或者151)，驱动薄膜晶体管100的源极151(或者152)和漏极152(或者151)连接于有源层14；层间绝缘层16，设置于第二金属层上15，层间绝缘层16设有通孔161～162，微型发光二极管20的第二电极22通过通孔162电性连接于驱动薄膜晶体管100的漏极152(或者151)。需要说明的是，此时以薄膜晶体管100作为驱动薄膜晶体管T2进行说明，在一些实施例和实施情况中薄膜晶体管100还可以为开关薄膜晶体管T1，不限于此。\n\n[0046]在本实施例中，请参继续阅图1、图2、图3，第一金属层12还包括多个接触电极300，每一驱动单元80中的接触电极300包括第一接触电极123和第二接触电极124，第一接触电极123的两端分别连接于VDD信号端和微型发光二极管20(M)的第一电极21，第二接触电极124的两端分别连接于微型发光二极管20(M)的第二电极22和驱动薄膜晶体管(T2)100的漏极152(或者151)，即微型发光二极管20(M)第一电极21是通过第一接触电极123连接于VDD信号端的，即微型发光二极管20(M)第二电极22是通过第二接触电极124连接于驱动薄膜晶体管(T2)100的漏极152(或者151)的。在本实施例中接触电极300是通过第一金属层12形成。其中微型发光二极管20(M)第一电极21与第一接触电极123通过第一连接部31电性连接，微型发光二极管20(M)第二电极22与第二接触电极124通过第二连接部32电性连接，第一连接部31、第二连接部32可以为锡膏等材料，但不限于此。需要说明的是，此时以薄膜晶体管100作为驱动薄膜晶体管T2进行说明，在一些实施例和实施情况中薄膜晶体管100还可以为开关薄膜晶体管T1，不限于此。\n\n[0047]实施例二\n\n[0048]在本实施例中，请参阅图3、图4、图5，与实施例一的区别在于接触电极300为第二金属层15制作。\n\n[0049]具体的，第二金属层15还包括多个接触电极300，每一驱动单元80中的接触电极300包括第一接触电极154和第二接触电极155，第一接触电极154的两端分别连接于VDD信号端和微型发光二极管20(M)的第一电极21，第二接触电极155的两端分别连接于微型发光二极管20(M)的第二电极22和驱动薄膜晶体管(T2)100的漏极152(或者151)，即微型发光二极管20(M)第一电极21是通过第一接触电极154连接于VDD信号端的，即微型发光二极管20(M)第二电极22是通过第二接触电极155连接于驱动薄膜晶体管(T2)100的漏极152(或者151)的。在本实施例中接触电极300是通过第二金属层15形成。其中微型发光二极管20(M)第一电极21与第一接触电极154通过第一连接部31电性连接，微型发光二极管20(M)第二电极22与第二接触电极155通过第二连接部32电性连接，第一连接部31、第二连接部32可以为锡膏等材料，但不限于此。需要说明的是，此时以薄膜晶体管100作为驱动薄膜晶体管T2进行说明，在一些实施例和实施情况中薄膜晶体管100还可以为开关薄膜晶体管T1，不限于此。\n\n[0050]实施例三\n\n[0051]在本实施例中，请参阅图3、图6、图7，与实施例一、二的区别在于层间绝缘层16上还设有ITO层。\n\n[0052]在本实施例中，请参阅图6、图7，一种背光模组1000，其包括玻璃基底11；多个驱动单元80，多个驱动单元80形成于玻璃基底11上，每一驱动单元80包括薄膜晶体管100；多个微型发光二极管20，多个微型发光二极管20设于玻璃基底11上，每一微型发光二极管20包括第一电极21和第二电极22，第一电极21和第二电极22连接于对应的驱动单元80。通过在玻璃基底上制作包含薄膜晶体管(TFT)100的驱动单元80来驱动min-LED(微型发光二极管)20，可以减小mini-LED(微型发光二极管)背光模组1000及显示面板的厚度，降低成本。\n\n[0053]如图3、图6、图7所示，图中示意了：薄膜晶体管(TFT)100，薄膜晶体管(TFT)100包括源极151(或者152)、漏极152(或者151)、栅极121、有源层14，TFT100还包括设于有栅极121与有源层14之间栅极绝缘层13，同时源极151(或者152)、漏极152(或者151)表面还可以覆盖层间绝缘层16，图1、图2中薄膜晶体管(TFT)100可以为图3中开关薄膜晶体管T1或驱动薄膜晶体管T2之一，例如当薄膜晶体管(TFT)100为驱动薄膜晶体管T2时，开关薄膜晶体管T1位于驱动薄膜晶体管T2位于图中未示意的一侧，开关薄膜晶体管T1也包括源极151(或者152)、漏极152(或者151)、栅极121、有源层14、栅极绝缘层13。\n\n[0054]如图3、图6、图7所示，图中示意了：电容200，电容200包括第一电容电极122(或者153)、第二电容电极153(或者122)、以及第一电容电极122(或者153)与第二电容电极153(或者122)之间的绝缘层，图6、图7中电容200即为图3电路中的存储电容C，图6、图7中第一电容电极122(或者153)等同于图3电路中的第一电容电极c1，图7、图8中第二电容电极153(或者122)等同于图3电路中的第二电容电极c2，此处第一电容电极122(或者153)与第二电容电极153(或者122)之间的绝缘层为栅极绝缘层13。需要说明的是，在图6、图7之中，第一电容电极可以为122或者153之一，那么第二电容电极为122和153之中的另外一个。\n\n[0055]如图3、图6、图7所示，背光模组1000还包括接触电极300，接触电极300包括第一接触电极123和第二接触电极124；或者接触电极300包括第一接触电极154和第二接触电极155。\n\n[0056]在本实施例中，请参继续阅图6、图7，背光模组1000还包括第一金属层12，设置于玻璃基底11上，第一金属层12包括驱动薄膜晶体管100(T2)的栅极121；栅极绝缘层13，设置于玻璃基底11和所述第一金属层12上；有源层14，设置于栅极绝缘层13上并位于驱动薄膜晶体管100的栅极121的一侧；第二金属层15，设置于栅极绝缘层13和有源层14上，第二金属层15包括驱动薄膜晶体管100的源极151(或者152)和所述漏极152(或者151)，驱动薄膜晶体管100的源极151(或者152)和漏极152(或者151)连接于有源层14；层间绝缘层16，设置于第二金属层上15，层间绝缘层16设有通孔161～162，微型发光二极管20的第二电极22通过通孔162电性连接于驱动薄膜晶体管100的漏极152(或者151)；ITO层17设于层间绝缘层16上，ITO层16可以作为连接电极连接第一金属层12与第二金属层15上的走线或电极，例如数据线Data或VDD信号线包括第一金属层12的第一子部125和第二金属层15的第二子部154，ITO层17可以作为连接电极穿过层间绝缘层16上的通孔连接第一金属层12的第一子部125和第二金属层15的第二子部154，以减小数据线Data或VDD信号线的电阻值。需要说明的是，此时以薄膜晶体管100作为驱动薄膜晶体管T2进行说明，在一些实施例和实施情况中薄膜晶体管100还可以为开关薄膜晶体管T1，不限于此。\n\n[0057]基于实施一、二、三，第一金属层12或/和第二金属层15可以为铜(Cu)制作，有源层14为非晶硅，但并不限于此，例如：第一金属层12或第二金属层15为Mo/AL/Mo材料与结构，有源层为金属氧化物(IGZO)等。\n\n[0058]基于实施一、二、三，薄膜晶体管100的结构不限于底栅结构，还可以为顶栅、侧栅结构，不限于此。\n\n[0059]基于实施一、二、三，第一金属层12还包括存储电容200(存储电容C)的第一电容电极122(c1或c2之一)，第二金属层15还包括存储电容200(存储电容C)的第二电容电极153(c1或c2之一)。\n\n[0060]基于实施一、二、三，背光模组还可以选择性的包括扫描线Scan以供给驱动单元扫描信号，选择性的包括数据线Data以供给驱动单元数据信号，选择性的包括VDD走线以供给驱动单元VDD信号或者用作VDD信号端，选择性的包括VSS走线以供给驱动单元VSS信号或者用作VSS信号端。扫描线Scan、数据线Data、VDD走线或VDD信号端、VSS走线或VSS信号端可以选择性的使用第一金属层12和第二金属层15其中之一或者其中之二制作，不限于此。\n\n[0061]基于实施一、二、三，存储电容200(存储电容C)可以为第一金属层12和第二金属层15形成了第一电容电极(c1)和第二电容电极(c2)。\n\n[0062]实施例四\n\n[0063]基于上述实施例，对背光模组的工作流程和原理进行举例说明。\n\n[0064]在本实施例中，请参阅图3、图8，图3为上述实施例中背光模组驱动mini-LED(微型发光二极管)的电路结构图，图8为图3电路驱动mini-LED(微型发光二极管)发光的工作流程图。\n\n[0065]图3示意了本实施例的电路结构图，每一驱动单元80包括开关模块6、驱动模块7及存储模块8，开关模块6的一端分别连接于驱动模块7和存储模块8，驱动模块7连接于微型发光二极管20。具体的，每一驱动单元80还包括VDD信号端和VSS信号端，开关模块6包括开关薄膜晶体管T1，驱动模块7包括驱动薄膜晶体管T2，存储模块8包括存储电容C，开关薄膜晶体管T1的栅极连接于扫描线Scan，开关薄膜晶体管T1的源极连接于数据线Data，开关薄膜晶体管T1的漏极连接于存储电容C的第一电容电极c1和驱动薄膜晶体管T2的栅极，驱动薄膜晶体管T2的源极连接于mini-LED(微型发光二极管)M的第二电极，驱动薄膜晶体管T2的漏极连接于VSS信号端，存储电容的第二电容电极c2连接于VSS信号端，mini-LED(微型发光二极管)M的第一电极连接于VDD信号端。通过此薄膜晶体管与电容等结构构成的电路可以驱动mini-LED(微型发光二极管)M进行发光，从而为背光模组提供光源。需要说明的是：此处开关薄膜晶体管T1的源极和漏极可以互换，驱动薄膜晶体管T2的源极和漏极可以互换，例如，开关薄膜晶体管T1的漏极连接于数据线Data，开关薄膜晶体管T1的源极连接于存储电容C的第一电容电极c1和驱动薄膜晶体管T2的栅极。需要说明的是：如图3所示，图3中示意了微型发光二极管，微型发光二极管可以用M或20表示。背光模组1000工作时分为发光阶段S1和擦黑阶段S2，例如mini-LED(微型发光二极管)M工作时为发光阶段S1和擦黑阶段S2交替进行，在发光阶段S1内mini-LED(微型发光二极管)M发出光线，在擦黑阶段S2内mini-LED(微型发光二极管)M不发出光线。\n\n[0066]具体的，发光阶段S1可以包括通电阶段S11和电压维持阶段S12，在通电阶段S11内驱动单元输入信号后mini-LED(微型发光二极管)M开始工作发出光线，在电压维持阶段S12内通过存储电容C维持mini-LED(微型发光二极管)M持续工作发出光线。\n\n[0067]具体的，在发光阶段S1的通电阶段S11内，开关薄膜晶体管T1和驱动薄膜晶体管T2打开，驱动薄膜晶体管T2打开使得所述VDD信号端的信号驱使mini-LED(微型发光二极管)M发光，在发光阶段S1的电压维持阶段S12内，开关薄膜晶体管T1关闭，存储电容C维持驱动薄膜晶体管T2打开并使mini-LED(微型发光二极管)M维持发光。\n\n[0068]在擦黑阶段S2内，开关薄膜晶体管T1打开，数据线Data的信号通过开关薄膜晶体管T1传输至存储电容C的第一电容电极c1和驱动薄膜晶体管T2的栅极，此时驱动薄膜晶体管T2关闭，存储电容C复位，mini-LED(微型发光二极管)M不工作、不发出光线。\n\n[0069]进一步详细的描述背光模组的工作过程，在一些实施例和实施情况中，VDD信号端一直供给高电位(例如20V)、VSS信号端一直供给低电位(例如0V)。背光模组的工作阶段主要分为两个阶段：发光阶段S1和擦黑阶段S2。背光模组的工作阶段实现方式为：扫描线Scan和数据线data同时供给各自对应的高电位，此时开关薄膜晶体管T1打开，将数据线Data的高电位写入A点(A点电性联通开关薄膜晶体管T1的漏极、驱动薄膜晶体管T2的栅极、以及存储电容C的第一电容电极c1)，因为A点高电位，所以驱动薄膜晶体管T2打开，mini-LED(微型发光二极管)M导通，mini-LED(微型发光二极管)M可以发光，此后扫描线Scan和数据线Data关闭，因A点和VSS信号端之间有一个存储电容C，所以A点的电位可以一直维持住，驱动薄膜晶体管T2持续打开，mini-LED(微型发光二极管)M持续发光。擦黑阶段S2：扫描线Scan的信号供给对应的高电位，数据线Data的信号供给对应的低电位，这样A点写入低电位，开关薄膜晶体管T1关闭，mini-LED(微型发光二极管)M回路没有电流，mini-LED(微型发光二极管)M擦黑，即mini-LED(微型发光二极管)M不发光。\n\n[0070]基于上述实施例，需要说明的是薄膜晶体管的源极、漏极是可以互换的，例如在图3示意的电路结构图中，每一驱动单元包括薄膜晶体管、存储电容C、VDD信号端、VSS信号端、扫描线Scan、数据线Data，薄膜晶体管包括开关薄膜晶体管T1和驱动薄膜晶体管T2，开关薄膜晶体管T1的栅极连接于扫描线Scan，开关薄膜晶体管T1的漏连接于数据线Data，开关薄膜晶体管T1的源极连接于存储电容C的第一电容电极c1和驱动薄膜晶体管T2的栅极，驱动薄膜晶体管T2的漏极连接于mini-LED(微型发光二极管)M的第二电极，驱动薄膜晶体管T2的源极连接于VSS信号端，存储电容的第二电容电极c2连接于VSS信号端，mini-LED(微型发光二极管)M的第一电极连接于VDD信号端。通过此薄膜晶体管与电容等结构构成的电路可以驱动mini-LED(微型发光二极管)M进行发光，从而为背光模组提供光源。\n\n[0071]基于上述实施例，需要说明的是开关薄膜晶体管T1和驱动薄膜晶体管T2的开关电压信号由开关薄膜晶体管T1和驱动薄膜晶体管T2之内有源层(半导体层)的类型和特性决定，在一些实施例中，两者的栅极电压分别为高电位时开关薄膜晶体管T1和驱动薄膜晶体管T2打开，两者的栅极电压分别为低电位时开关薄膜晶体管T1和驱动薄膜晶体管T2关闭；在一些实施例中，两者的栅极电压分别为低电位时开关薄膜晶体管T1和驱动薄膜晶体管T2打开，两者的栅极电压分别为高电位时开关薄膜晶体管T1和驱动薄膜晶体管T2关闭。\n\n[0072]实施例五\n\n[0073]在本实施例中，请参阅图9，本申请还提出了一种显示面板3000，显示面板3000包括上述实施例中的背光模组1000。例在如图9中，液晶盒2000设置在背光模组1000上，背光模组1000为显示面板3000提供光源进行显示。\n\n[0074]请参阅图10，本申请还提出了一种电子装置5000，电子装置包括上述显示面板3000，电子装置5000可以为电视、电脑等，但不限于此，电子装置5000还可以包括外壳等其他部件4000。\n\n[0075]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0076]以上对本申请实施例所提供的一种显示面板及显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10800, 23854, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其是涉及一种卷曲显示装置。\n\n背景技术\n\n[0002]现有显示技术朝着卷曲显示产品的方向发展，在现有卷曲显示装置中，如何实现显示面板和摄像头的共存是需要考虑的问题，但往往会出现卷曲显示装置中无法设置摄像头，或者摄像头与显示面板的配合较差，导致卷曲显示装置中摄像头与显示面板的共存效果较差，无法实现摄像功能。\n\n[0003]所以，现有卷曲显示装置存在摄像头与显示面板共存效果较差，导致无法实现摄像功能的技术问题。\n\n发明内容\n\n[0004]本申请实施例提供一种卷曲显示装置，用以解决现有卷曲显示装置存在摄像头与显示面板共存效果较差，导致无法实现摄像功能的技术问题。\n\n[0005]本申请实施例提供一种卷曲显示装置，该卷曲显示装置包括：\n\n[0006]卷轴；\n\n[0007]摄像组件，设置于所述卷轴内，所述摄像组件用于在摄像时，弹出卷轴；\n\n[0008]显示面板，与所述卷轴连接，所述显示面板围绕所述卷轴设置，所述显示面板用于在显示时，沿所述卷轴一侧展开；\n\n[0009]其中，所述显示面板包括第一显示区、以及设置于所述第一显示区与卷轴之间的第一区，所述摄像组件用于在所述显示面板展开第一显示区和所述第一区时，实现第一端摄像，所述摄像组件用于在所述卷轴覆盖第一区，所述显示面板展开第一显示区时，实现与所述第一端摄像相对的第二端摄像。\n\n[0010]在一些实施例中，所述卷轴的截面形状包括圆柱形。\n\n[0011]在一些实施例中，所述第一区的宽度大于或者等于所述卷轴的半周长。\n\n[0012]在一些实施例中，所述卷轴的材料包括塑料、玻璃、陶瓷中的一种。\n\n[0013]在一些实施例中，所述第一区为非显示区。\n\n[0014]在一些实施例中，所述第一区为第二显示区，所述第一显示区与所述第二显示区连接，所述第一显示区与所述第二显示区用于显示同一画面的两个部分。\n\n[0015]在一些实施例中，所述第一区为第二显示区，所述第一显示区与所述第二显示区隔离，所述第一显示区与所述第二显示区用于显示不同画面。\n\n[0016]在一些实施例中，所述摄像组件的截面形状包括矩形、圆柱形、三角形中的一种。\n\n[0017]在一些实施例中，所述摄像组件的宽度范围为所述卷轴直径的三分之一至二分之一。\n\n[0018]在一些实施例中，所述显示面板包括OLED显示面板、Mini-LED显示面板和Micro-LED显示面板中的一种。\n\n[0019]有益效果：本申请实施例提供一种卷曲显示装置，该卷曲显示装置包括卷轴、摄像组件和显示面板，所述摄像组件设置于所述卷轴内，所述摄像组件用于在摄像时，弹出卷轴，所述显示面板与所述卷轴连接，所述显示面板围绕所述卷轴设置，所述显示面板用于在显示时，沿所述卷轴一侧展开，其中，所述显示面板包括第一显示区、以及设置于所述第一显示区与卷轴之间的第一区，所述摄像组件用于在所述显示面板展开第一显示区和所述第一区时，实现第一端摄像，所述摄像组件用于在所述卷轴覆盖第一区，所述显示面板展开第一显示区时，实现与所述第一端摄像相对的第二端摄像；通过在卷轴内设置摄像组件，摄像组件可从卷轴中弹出，使得在展开显示面板时，可以实现第一端摄像，而通过将卷轴向显示面板卷曲第一区的宽度，即可实现与第一端摄像相对的第二端摄像，从而通过在卷轴中设置摄像组件实现前置摄像和后置摄像，解决了现有卷曲显示装置存在摄像头与显示面板共存效果较差，导致无法实现摄像功能的技术问题。\n\n附图说明\n\n[0020]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0021]图1为现有显示装置的示意图。\n\n[0022]图2为本申请实施例提供的卷曲显示装置卷曲时的示意图。\n\n[0023]图3为本申请实施例提供的卷曲显示装置展开时的第一示意图。\n\n[0024]图4为本申请实施例提供的卷曲显示装置展开时的第二示意图。\n\n具体实施方式\n\n[0025]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0026]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0027]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0028]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0029]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0030]本申请实施例针对现有卷曲显示装置存在摄像组件与显示面板共存效果较差，导致无法实现摄像功能的技术问题，本申请实施例用以解决该问题。\n\n[0031]如图1中的(a)所示，现有的平面显示装置或者折叠式显示装置会在显示装置1的顶部的三处位置11、12、13中的任意一处设置摄像头，通过弹出摄像头实现摄像功能，如图1中的(b)所示，摄像头弹出时分别对应设置位置11、12、13呈现为摄像头14、15、16，从而实现摄像功能，但在卷曲显示装置中，由于显示面板会卷曲，而摄像头无法卷曲，导致在卷曲显示装置中无法设置摄像头，或者摄像头与显示面板的共存效果较差，无法实现显示效果，即现有卷曲显示装置存在摄像头与显示面板共存效果较差，导致无法实现摄像功能的技术问题。\n\n[0032]如图2、图3、图4所示，本申请实施例提供一种卷曲显示装置，该卷曲显示装置包括：\n\n[0033]卷轴22；\n\n[0034]摄像组件24，设置于所述卷轴22内，所述摄像组件24用于在摄像时，弹出卷轴22；\n\n[0035]显示面板21，与所述卷轴22连接，所述显示面板21围绕所述卷轴22设置，所述显示面板21用于在显示时，沿所述卷轴22一侧展开；\n\n[0036]其中，所述显示面板21包括第一显示区212、以及设置于所述第一显示区212与卷轴22之间的第一区211，所述摄像组件24用于在所述显示面板21展开第一显示区212和所述第一区211时，实现第一端摄像，所述摄像组件24用于在所述卷轴22覆盖第一区211，所述显示面板21展开第一显示区212时，实现与所述第一端摄像相对的第二端摄像。\n\n[0037]本申请实施例提供一种卷曲显示装置，该卷曲显示装置包括卷轴、摄像组件和显示面板，所述摄像组件设置于所述卷轴内，所述摄像组件用于在摄像时，弹出卷轴，所述显示面板与所述卷轴连接，所述显示面板围绕所述卷轴设置，所述显示面板用于在显示时，沿所述卷轴一侧展开，其中，所述显示面板包括第一显示区、以及设置于所述第一显示区与卷轴之间的第一区，所述摄像组件用于在所述显示面板展开第一显示区和所述第一区时，实现第一端摄像，所述摄像组件用于在所述卷轴覆盖第一区，所述显示面板展开第一显示区时，实现与所述第一端摄像相对的第二端摄像；通过在卷轴内设置摄像组件，摄像组件可从卷轴中弹出，使得在展开显示面板时，可以实现第一端摄像，而通过将卷轴向显示面板卷曲第一区的宽度，即可实现与第一端摄像相对的第二端摄像，从而通过在卷轴中设置摄像组件实现前置摄像和后置摄像，解决了现有卷曲显示装置存在摄像头与显示面板共存效果较差，导致无法实现摄像功能的技术问题。\n\n[0038]需要说明的是，如图2所示，为了方便摄像头的安装、以及摄像头的弹出，可以使得摄像头24与卷轴22之间设有空隙23，但在为了避免灰尘、水氧时，也可以去除空隙23，本申请实施例对此不限定，可以存在空隙、也可以不存在空隙。\n\n[0039]在一种实施例中，可以将摄像头设置于卷轴侧壁上，设置于显示面板与卷轴之间，从而实现摄像功能。\n\n[0040]在一种实施例中，所述第一端摄像为后置摄像、所述第二端摄像为前置摄像，即通过对卷轴的卷曲，使得摄像头的方向发生变化，从而实现前置摄像和后置摄像，在显示面板完全展开时，实现后置摄像，在显示面板被卷曲一部分时，实现前置摄像。\n\n[0041]在一种实施例中，所述第一端摄像为前置摄像，所述第二端摄像为后置摄像，在显示面板完全展开时，实现前置摄像，在显示面板被卷曲一部分时，实现后置摄像。\n\n[0042]在一种实施例中，如图2所示，所述卷轴的截面形状包括圆柱形，为了使得显示面板在卷曲时最后卷曲得到的体积最小，可以采用圆柱形设置卷轴，同时，卷轴的形状为圆柱形，可以避免在卷轴的截面形状为矩形、梯形等形状时，显示面板在卷曲时被矩形或者梯形的棱损伤，以及在显示面板卷曲后，矩形或者梯形的棱对显示面板损伤，同时，卷轴为圆柱形可以避免伤害到用户或者承载卷曲显示装置的包装构件，但在卷轴的截面形状为矩形、梯形等形状，可以到达较好的效果时，卷轴的截面形状也可以为矩阵、梯形等形状。\n\n[0043]在一种实施例中，如图3所示，卷轴22的直径为D、显示面板21展开后第一区22的宽度为L、第一显示区212的宽度为A，显示面板21的宽度为S，即S＝L+A，通过将卷轴向显示面板卷曲，使得摄像组件可以实现前置摄像和后置摄像。\n\n[0044]在一种实施例中，如图3所示，所述第一区的宽度L大于或者等于所述卷轴22的半周长πD/2，即通过使得第一区的宽度等于大于或者等于卷轴的半周长，可以使得卷轴在卷曲覆盖到第一区上后，可以实现前置摄像和后置摄像的转变。\n\n[0045]在一种实施例中，所述卷轴的材料包括塑料、玻璃、陶瓷中的一种，在选用卷轴的材料时，塑料、玻璃、陶瓷均可作为卷轴材料，其中，选用塑料作为卷轴的材料，可以实现更加轻薄、更加柔性，可以采用聚乙烯、聚丙烯、聚氯乙烯等材料制备塑料，作为卷轴的材料；在选用玻璃和陶瓷作为卷轴材料时，可以使得卷曲显示装置的手感、观感等效果较好，可以选择二氧化硅、氧化钙和氧化钠作为材料制备玻璃，从而作为卷轴的材料。\n\n[0046]在一种实施例中，所述卷轴的半径为3毫米至9毫米，在设置卷轴时，考虑到卷轴过大影响显示，卷轴过小会影响稳定性，卷轴可能会出现断裂等问题，设置卷轴的半径为3毫米至9毫米。\n\n[0047]在一种实施例中，所述第一区为非显示区，考虑到第一区在卷轴卷曲到第一区上时，第一区会被遮挡，设置第一区为非显示区，从而使得第一区不会影响到显示，第一区内可以设置无效像素，即在制备显示面板时，在第一区内设置像素，但在使用时该区域不显示，从而使得第一区为非显示区，对显示不产生影响。\n\n[0048]在一种实施例中，所述第一区为第二显示区，所述第一显示区与所述第二显示区连接，所述第一显示区与所述第二显示区用于显示同一画面的两个部分，即将第一区设置为显示区，使得第一区与第一显示区相同，在制备显示面板时，同时制备第一区和第一显示区内的各个膜层，第一区与第一显示区为显示区中的两个部分，第一区和第一显示区在显示时，可以显示一个画面的两个部分，在第一区被卷轴遮挡时，可以使得显示画面显示在第一显示区上，而第一区此时不显示，从而使得显示区的面积更大，且在显示时，显示效果不会受到影响。\n\n[0049]在一种实施例中，所述第一区为第二显示区，所述第一显示区与所述第二区隔离，所述第一显示区与所述第二显示区用于显示不同画面，在设置第一区时，可以使得第一区与第一显示区显示不同的画面，第一区与第二显示区隔离，即第一区内的数据线、扫描线等走线与第一显示区内的数据线、扫描线隔开，使得第一区内显示的画面与第二显示区显示的画面不同，同时，考虑到第一区会存在被遮挡，可以使得第一区显示时间、天气等内容，在第一区被遮挡，实现摄像时，该显示内容对显示影响较小，对用户体验的影响较小，同时，可以使得该显示亮度和显示大小较大，从而可以使得显示内容穿过卷轴，对显示效果的影响达到最小。\n\n[0050]在一种实施例中，所述摄像组件的截面形状包括矩形、圆柱形、三角形中的一种，在摄像组件的设置过程中，对摄像组件的形状不进行限定，可以为现有的矩形，也可以为了配合卷轴，设置为圆柱形，还可以设置为三角形。\n\n[0051]在一种实施例中，所述摄像组件的宽度范围为所述卷轴直径的三分之一至二分之一，在设置摄像组件时，摄像组件的宽度不能过小，影响到摄像组件的正常工作，但摄像组件的宽度不能过大，从而导致卷轴的稳定性较差，无法承载显示面板，或者设置摄像组件的部分会出现断裂，可以设置摄像组件的宽度范围为所述卷轴直径的三分之一至二分之一，但本申请实施例不限于此，在需要使得摄像组件的宽度范围处于该范围之外时，也可以根据需求设置摄像组件的宽度范围。\n\n[0052]在一种实施例中，如图3所示，所述摄像组件24包括摄像头241，通过将卷轴卷曲，可以实现摄像头前置摄像和后置摄像。\n\n[0053]在一种实施例中，所述显示面板包括OLED(Organic Light-Emitting Diode，有机发光二极管)显示面板、Mini-LED(mini-Light-Emitting Diode，迷你发光二极管)显示面板和Micro-LED(micro Light-Emitting Diode，微型发光二极管)显示面板中的一种，在选择显示面板时，可以选择OLED显示面板、Mini-LED显示面板和Micro-LED显示面板，由于上述显示面板的柔性较好，使用上述显示面板时，在实现卷曲显示装置时较易实现，且实现效果较好，但本申请实施例不限于此，显示面板可以包括液晶显示面板。\n\n[0054]在一种实施例中，所述显示面板展开后的尺寸为5英寸以上。\n\n[0055]根据以上实施例可知：\n\n[0056]本申请实施例提供一种卷曲显示装置，该卷曲显示装置包括卷轴、摄像组件和显示面板，所述摄像组件设置于所述卷轴内，所述摄像组件用于在摄像时，弹出卷轴，所述显示面板与所述卷轴连接，所述显示面板围绕所述卷轴设置，所述显示面板用于在显示时，沿所述卷轴一侧展开，其中，所述显示面板包括第一显示区、以及设置于所述第一显示区与卷轴之间的第一区，所述摄像组件用于在所述显示面板展开第一显示区和所述第一区时，实现第一端摄像，所述摄像组件用于在所述卷轴覆盖第一区，所述显示面板展开第一显示区时，实现与所述第一端摄像相对的第二端摄像；通过在卷轴内设置摄像组件，摄像组件可从卷轴中弹出，使得在展开显示面板时，可以实现第一端摄像，而通过将卷轴向显示面板卷曲第一区的宽度，即可实现与第一端摄像相对的第二端摄像，从而通过在卷轴中设置摄像组件实现前置摄像和后置摄像，解决了现有卷曲显示装置存在摄像头与显示面板共存效果较差，导致无法实现摄像功能的技术问题。\n\n[0057]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0058]以上对本申请实施例所提供的一种卷曲显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其是涉及一种卷曲显示装置。\n\n背景技术\n\n[0002]现有显示技术朝着卷曲显示产品的方向发展，在现有卷曲显示装置中，如何实现显示面板和摄像头的共存是需要考虑的问题，但往往会出现卷曲显示装置中无法设置摄像头，或者摄像头与显示面板的配合较差，导致卷曲显示装置中摄像头与显示面板的共存效果较差，无法实现摄像功能。\n\n[0003]所以，现有卷曲显示装置存在摄像头与显示面板共存效果较差，导致无法实现摄像功能的技术问题。\n\n发明内容\n\n[0004]本申请实施例提供一种卷曲显示装置，用以解决现有卷曲显示装置存在摄像头与显示面板共存效果较差，导致无法实现摄像功能的技术问题。\n\n[0005]本申请实施例提供一种卷曲显示装置，该卷曲显示装置包括：\n\n[0006]卷轴；\n\n[0007]摄像组件，设置于所述卷轴内，所述摄像组件用于在摄像时，弹出卷轴；\n\n[0008]显示面板，与所述卷轴连接，所述显示面板围绕所述卷轴设置，所述显示面板用于在显示时，沿所述卷轴一侧展开；\n\n[0009]其中，所述显示面板包括第一显示区、以及设置于所述第一显示区与卷轴之间的第一区，所述摄像组件用于在所述显示面板展开第一显示区和所述第一区时，实现第一端摄像，所述摄像组件用于在所述卷轴覆盖第一区，所述显示面板展开第一显示区时，实现与所述第一端摄像相对的第二端摄像。\n\n[0010]在一些实施例中，所述卷轴的截面形状包括圆柱形。\n\n[0011]在一些实施例中，所述第一区的宽度大于或者等于所述卷轴的半周长。\n\n[0012]在一些实施例中，所述卷轴的材料包括塑料、玻璃、陶瓷中的一种。\n\n[0013]在一些实施例中，所述第一区为非显示区。\n\n[0014]在一些实施例中，所述第一区为第二显示区，所述第一显示区与所述第二显示区连接，所述第一显示区与所述第二显示区用于显示同一画面的两个部分。\n\n[0015]在一些实施例中，所述第一区为第二显示区，所述第一显示区与所述第二显示区隔离，所述第一显示区与所述第二显示区用于显示不同画面。\n\n[0016]在一些实施例中，所述摄像组件的截面形状包括矩形、圆柱形、三角形中的一种。\n\n[0017]在一些实施例中，所述摄像组件的宽度范围为所述卷轴直径的三分之一至二分之一。\n\n[0018]在一些实施例中，所述显示面板包括OLED显示面板、Mini-LED显示面板和Micro-LED显示面板中的一种。\n\n[0019]有益效果：本申请实施例提供一种卷曲显示装置，该卷曲显示装置包括卷轴、摄像组件和显示面板，所述摄像组件设置于所述卷轴内，所述摄像组件用于在摄像时，弹出卷轴，所述显示面板与所述卷轴连接，所述显示面板围绕所述卷轴设置，所述显示面板用于在显示时，沿所述卷轴一侧展开，其中，所述显示面板包括第一显示区、以及设置于所述第一显示区与卷轴之间的第一区，所述摄像组件用于在所述显示面板展开第一显示区和所述第一区时，实现第一端摄像，所述摄像组件用于在所述卷轴覆盖第一区，所述显示面板展开第一显示区时，实现与所述第一端摄像相对的第二端摄像；通过在卷轴内设置摄像组件，摄像组件可从卷轴中弹出，使得在展开显示面板时，可以实现第一端摄像，而通过将卷轴向显示面板卷曲第一区的宽度，即可实现与第一端摄像相对的第二端摄像，从而通过在卷轴中设置摄像组件实现前置摄像和后置摄像，解决了现有卷曲显示装置存在摄像头与显示面板共存效果较差，导致无法实现摄像功能的技术问题。\n\n附图说明\n\n[0020]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0021]图1为现有显示装置的示意图。\n\n[0022]图2为本申请实施例提供的卷曲显示装置卷曲时的示意图。\n\n[0023]图3为本申请实施例提供的卷曲显示装置展开时的第一示意图。\n\n[0024]图4为本申请实施例提供的卷曲显示装置展开时的第二示意图。\n\n具体实施方式\n\n[0025]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0026]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0027]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0028]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0029]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0030]本申请实施例针对现有卷曲显示装置存在摄像组件与显示面板共存效果较差，导致无法实现摄像功能的技术问题，本申请实施例用以解决该问题。\n\n[0031]如图1中的(a)所示，现有的平面显示装置或者折叠式显示装置会在显示装置1的顶部的三处位置11、12、13中的任意一处设置摄像头，通过弹出摄像头实现摄像功能，如图1中的(b)所示，摄像头弹出时分别对应设置位置11、12、13呈现为摄像头14、15、16，从而实现摄像功能，但在卷曲显示装置中，由于显示面板会卷曲，而摄像头无法卷曲，导致在卷曲显示装置中无法设置摄像头，或者摄像头与显示面板的共存效果较差，无法实现显示效果，即现有卷曲显示装置存在摄像头与显示面板共存效果较差，导致无法实现摄像功能的技术问题。\n\n[0032]如图2、图3、图4所示，本申请实施例提供一种卷曲显示装置，该卷曲显示装置包括：\n\n[0033]卷轴22；\n\n[0034]摄像组件24，设置于所述卷轴22内，所述摄像组件24用于在摄像时，弹出卷轴22；\n\n[0035]显示面板21，与所述卷轴22连接，所述显示面板21围绕所述卷轴22设置，所述显示面板21用于在显示时，沿所述卷轴22一侧展开；\n\n[0036]其中，所述显示面板21包括第一显示区212、以及设置于所述第一显示区212与卷轴22之间的第一区211，所述摄像组件24用于在所述显示面板21展开第一显示区212和所述第一区211时，实现第一端摄像，所述摄像组件24用于在所述卷轴22覆盖第一区211，所述显示面板21展开第一显示区212时，实现与所述第一端摄像相对的第二端摄像。\n\n[0037]本申请实施例提供一种卷曲显示装置，该卷曲显示装置包括卷轴、摄像组件和显示面板，所述摄像组件设置于所述卷轴内，所述摄像组件用于在摄像时，弹出卷轴，所述显示面板与所述卷轴连接，所述显示面板围绕所述卷轴设置，所述显示面板用于在显示时，沿所述卷轴一侧展开，其中，所述显示面板包括第一显示区、以及设置于所述第一显示区与卷轴之间的第一区，所述摄像组件用于在所述显示面板展开第一显示区和所述第一区时，实现第一端摄像，所述摄像组件用于在所述卷轴覆盖第一区，所述显示面板展开第一显示区时，实现与所述第一端摄像相对的第二端摄像；通过在卷轴内设置摄像组件，摄像组件可从卷轴中弹出，使得在展开显示面板时，可以实现第一端摄像，而通过将卷轴向显示面板卷曲第一区的宽度，即可实现与第一端摄像相对的第二端摄像，从而通过在卷轴中设置摄像组件实现前置摄像和后置摄像，解决了现有卷曲显示装置存在摄像头与显示面板共存效果较差，导致无法实现摄像功能的技术问题。\n\n[0038]需要说明的是，如图2所示，为了方便摄像头的安装、以及摄像头的弹出，可以使得摄像头24与卷轴22之间设有空隙23，但在为了避免灰尘、水氧时，也可以去除空隙23，本申请实施例对此不限定，可以存在空隙、也可以不存在空隙。\n\n[0039]在一种实施例中，可以将摄像头设置于卷轴侧壁上，设置于显示面板与卷轴之间，从而实现摄像功能。\n\n[0040]在一种实施例中，所述第一端摄像为后置摄像、所述第二端摄像为前置摄像，即通过对卷轴的卷曲，使得摄像头的方向发生变化，从而实现前置摄像和后置摄像，在显示面板完全展开时，实现后置摄像，在显示面板被卷曲一部分时，实现前置摄像。\n\n[0041]在一种实施例中，所述第一端摄像为前置摄像，所述第二端摄像为后置摄像，在显示面板完全展开时，实现前置摄像，在显示面板被卷曲一部分时，实现后置摄像。\n\n[0042]在一种实施例中，如图2所示，所述卷轴的截面形状包括圆柱形，为了使得显示面板在卷曲时最后卷曲得到的体积最小，可以采用圆柱形设置卷轴，同时，卷轴的形状为圆柱形，可以避免在卷轴的截面形状为矩形、梯形等形状时，显示面板在卷曲时被矩形或者梯形的棱损伤，以及在显示面板卷曲后，矩形或者梯形的棱对显示面板损伤，同时，卷轴为圆柱形可以避免伤害到用户或者承载卷曲显示装置的包装构件，但在卷轴的截面形状为矩形、梯形等形状，可以到达较好的效果时，卷轴的截面形状也可以为矩阵、梯形等形状。\n\n[0043]在一种实施例中，如图3所示，卷轴22的直径为D、显示面板21展开后第一区22的宽度为L、第一显示区212的宽度为A，显示面板21的宽度为S，即S＝L+A，通过将卷轴向显示面板卷曲，使得摄像组件可以实现前置摄像和后置摄像。\n\n[0044]在一种实施例中，如图3所示，所述第一区的宽度L大于或者等于所述卷轴22的半周长πD/2，即通过使得第一区的宽度等于大于或者等于卷轴的半周长，可以使得卷轴在卷曲覆盖到第一区上后，可以实现前置摄像和后置摄像的转变。\n\n[0045]在一种实施例中，所述卷轴的材料包括塑料、玻璃、陶瓷中的一种，在选用卷轴的材料时，塑料、玻璃、陶瓷均可作为卷轴材料，其中，选用塑料作为卷轴的材料，可以实现更加轻薄、更加柔性，可以采用聚乙烯、聚丙烯、聚氯乙烯等材料制备塑料，作为卷轴的材料；在选用玻璃和陶瓷作为卷轴材料时，可以使得卷曲显示装置的手感、观感等效果较好，可以选择二氧化硅、氧化钙和氧化钠作为材料制备玻璃，从而作为卷轴的材料。\n\n[0046]在一种实施例中，所述卷轴的半径为3毫米至9毫米，在设置卷轴时，考虑到卷轴过大影响显示，卷轴过小会影响稳定性，卷轴可能会出现断裂等问题，设置卷轴的半径为3毫米至9毫米。\n\n[0047]在一种实施例中，所述第一区为非显示区，考虑到第一区在卷轴卷曲到第一区上时，第一区会被遮挡，设置第一区为非显示区，从而使得第一区不会影响到显示，第一区内可以设置无效像素，即在制备显示面板时，在第一区内设置像素，但在使用时该区域不显示，从而使得第一区为非显示区，对显示不产生影响。\n\n[0048]在一种实施例中，所述第一区为第二显示区，所述第一显示区与所述第二显示区连接，所述第一显示区与所述第二显示区用于显示同一画面的两个部分，即将第一区设置为显示区，使得第一区与第一显示区相同，在制备显示面板时，同时制备第一区和第一显示区内的各个膜层，第一区与第一显示区为显示区中的两个部分，第一区和第一显示区在显示时，可以显示一个画面的两个部分，在第一区被卷轴遮挡时，可以使得显示画面显示在第一显示区上，而第一区此时不显示，从而使得显示区的面积更大，且在显示时，显示效果不会受到影响。\n\n[0049]在一种实施例中，所述第一区为第二显示区，所述第一显示区与所述第二区隔离，所述第一显示区与所述第二显示区用于显示不同画面，在设置第一区时，可以使得第一区与第一显示区显示不同的画面，第一区与第二显示区隔离，即第一区内的数据线、扫描线等走线与第一显示区内的数据线、扫描线隔开，使得第一区内显示的画面与第二显示区显示的画面不同，同时，考虑到第一区会存在被遮挡，可以使得第一区显示时间、天气等内容，在第一区被遮挡，实现摄像时，该显示内容对显示影响较小，对用户体验的影响较小，同时，可以使得该显示亮度和显示大小较大，从而可以使得显示内容穿过卷轴，对显示效果的影响达到最小。\n\n[0050]在一种实施例中，所述摄像组件的截面形状包括矩形、圆柱形、三角形中的一种，在摄像组件的设置过程中，对摄像组件的形状不进行限定，可以为现有的矩形，也可以为了配合卷轴，设置为圆柱形，还可以设置为三角形。\n\n[0051]在一种实施例中，所述摄像组件的宽度范围为所述卷轴直径的三分之一至二分之一，在设置摄像组件时，摄像组件的宽度不能过小，影响到摄像组件的正常工作，但摄像组件的宽度不能过大，从而导致卷轴的稳定性较差，无法承载显示面板，或者设置摄像组件的部分会出现断裂，可以设置摄像组件的宽度范围为所述卷轴直径的三分之一至二分之一，但本申请实施例不限于此，在需要使得摄像组件的宽度范围处于该范围之外时，也可以根据需求设置摄像组件的宽度范围。\n\n[0052]在一种实施例中，如图3所示，所述摄像组件24包括摄像头241，通过将卷轴卷曲，可以实现摄像头前置摄像和后置摄像。\n\n[0053]在一种实施例中，所述显示面板包括OLED(Organic Light-Emitting Diode，有机发光二极管)显示面板、Mini-LED(mini-Light-Emitting Diode，迷你发光二极管)显示面板和Micro-LED(micro Light-Emitting Diode，微型发光二极管)显示面板中的一种，在选择显示面板时，可以选择OLED显示面板、Mini-LED显示面板和Micro-LED显示面板，由于上述显示面板的柔性较好，使用上述显示面板时，在实现卷曲显示装置时较易实现，且实现效果较好，但本申请实施例不限于此，显示面板可以包括液晶显示面板。\n\n[0054]在一种实施例中，所述显示面板展开后的尺寸为5英寸以上。\n\n[0055]根据以上实施例可知：\n\n[0056]本申请实施例提供一种卷曲显示装置，该卷曲显示装置包括卷轴、摄像组件和显示面板，所述摄像组件设置于所述卷轴内，所述摄像组件用于在摄像时，弹出卷轴，所述显示面板与所述卷轴连接，所述显示面板围绕所述卷轴设置，所述显示面板用于在显示时，沿所述卷轴一侧展开，其中，所述显示面板包括第一显示区、以及设置于所述第一显示区与卷轴之间的第一区，所述摄像组件用于在所述显示面板展开第一显示区和所述第一区时，实现第一端摄像，所述摄像组件用于在所述卷轴覆盖第一区，所述显示面板展开第一显示区时，实现与所述第一端摄像相对的第二端摄像；通过在卷轴内设置摄像组件，摄像组件可从卷轴中弹出，使得在展开显示面板时，可以实现第一端摄像，而通过将卷轴向显示面板卷曲第一区的宽度，即可实现与第一端摄像相对的第二端摄像，从而通过在卷轴中设置摄像组件实现前置摄像和后置摄像，解决了现有卷曲显示装置存在摄像头与显示面板共存效果较差，导致无法实现摄像功能的技术问题。\n\n[0057]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0058]以上对本申请实施例所提供的一种卷曲显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10801, 23855, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种拼接显示面板及其制备方法。\n\n背景技术\n\n[0002]Micro LED(Micro Light-Emitting Diode,微型发光二极管)作为下一代显示技术，凭借其可实现无缝拼接，以及色彩还原性强，视角宽，高刷新率，高对比度，高稳定性，低功耗，高灰度等优势，相较目前应用的液晶显示技术和有机发光二极管显示技术具有更优异的综合性能，成为当前显示技术的研究热点之一。\n\n[0003]为了实现真正地无缝拼接，实现从小屏到大屏的显示，相邻的拼接显示单元之间的金属走线易受到相互挤压，存在着较大的弯折断线的风险，从而影响显示。\n\n发明内容\n\n[0004]本发明提供一种拼接显示面板及其制备方法，可有效改善拼接显示单元之间走线发生挤压短线的风险。\n\n[0005]为解决上述问题，第一方面，本发明提供一种拼接显示面板，所述拼接显示面板由多个拼接显示单元拼接而成，其中，任意一所述的拼接显示单元包括：\n\n[0006]基板，包括相对设置的第一表面与第二表面；\n\n[0007]柔性衬底，设于所述基板的第一表面上；\n\n[0008]阵列驱动层，设于所述柔性衬底上，包括显示区以及设于所述显示区外侧的至少一个扇出区；以及\n\n[0009]发光层，包括绑定于阵列驱动层的显示区上的多个微型发光二极管，\n\n[0010]其中，所述扇出区沿所述基板厚度方向弯折并贴附固定于所述基板的第二表面，所述扇出区包括沿基板厚度方向弯折的弯折部以及贴附固定于所述基板的第二表面的固定部，且所述基板仅设于除去所述扇出区相对的一侧的对应区域以外的显示区中，为相邻的所述拼接显示单元中扇出区的弯折部提供容纳空间。\n\n[0011]进一步地，所述扇出区的弯折部中距相对的所述基板侧面的最大垂直距离为0.05-2毫米。\n\n[0012]进一步地，在所述阵列驱动层中，所述显示区外侧设有两个扇出区，分别设于相邻的两侧边外侧，所述两个扇出区各自的固定部层叠的贴附固定于所述基板的第二表面。\n\n[0013]进一步地，所述发光层上还依次设有封装层以及支撑层。\n\n[0014]进一步地，所述扇出区的固定部通过双面胶层贴附固定于所述基板的第二表面，且所述固定部远离所述基板的一侧面还设有保护层。\n\n[0015]另一方面，本发明还提供了一种拼接显示面板的制备方法，包括如下步骤：\n\n[0016]S10:提供一基板，在所述基板的第一表面上形成柔性衬底；\n\n[0017]S20:在所述柔性衬底上形成阵列驱动层，得到柔性驱动基板；\n\n[0018]S30:对所述柔性驱动基板进行切割，得到多块拼接柔性驱动基板，每一所述的拼接柔性驱动基板中的阵列驱动层包括显示区以及设于所述显示区外侧的至少一个扇出区；\n\n[0019]S40:将多个微型发光二极管转移至所述拼接柔性驱动基板上，并绑定至所述阵列驱动层的显示区上；\n\n[0020]S50:在所述多个微型发光二极管上形成封装层；\n\n[0021]S60:切割除去非显示区域对应的所述封装层，并切割除去非显示区域，以及所述扇出区相对的一侧的部分显示区域对应的所述基板；\n\n[0022]S70:将所述扇出区沿所述基板厚度方向弯折并贴附固定于所述基板的与所述第一表面相对的第二表面上，即得到拼接显示单元，所述扇出区包括沿基板厚度方向弯折的弯折部以及贴附固定于所述基板的第二表面的固定部；以及\n\n[0023]S80:将多个所述的拼接显示单元通过拼接工艺形成拼接显示面板。\n\n[0024]进一步地，当所述显示区外侧设有两个扇出区，所述两个扇出区分别设于相邻的两侧边外侧时，所述步骤S60包括如下步骤：\n\n[0025]S601:对向所述基板的第一表面，以所述显示区中未设有所述扇出区的侧边的外边缘作为第一切割边进行切割至去除所述基板，以及以所述显示区中设有所述扇出区的侧边的外边缘作为第二切割边进行切割至去除所述封装层；\n\n[0026]S602:对向所述基板的第二表面，以所述显示区中未设有所述扇出区的侧边以内的边作为第三切割边进行切割，所述第三切割边平行于对应的侧边，以及以所述显示区中设有所述扇出区的侧边外边缘作为第四切割边进行切割，并且通过剥离工艺使得部分的所述基板与所述柔性衬底剥离而去除，仅保留所述第三切割边与所述第四切割边以内的部分显示区对应的所述基板。\n\n[0027]进一步地，在所述步骤S50前，在所述第二切割边的位置贴附透明的切割保护膜。\n\n[0028]进一步地，在所述步骤S70中，所述扇出区的弯折部中距相对的所述基板侧面的最大垂直距离为0.05-2毫米。\n\n[0029]进一步地，在所述步骤S50中，在形成的所述封装层后，还在所述封装层上形成一支撑层。\n\n[0030]有益效果：本发明提供了一种拼接显示面板及其制备方法，所述拼接显示面板由多个拼接显示单元拼接而得，在每一所述的拼接显示单元中，依次包括基板，柔性衬底，阵列驱动层以及发光层，其中，阵列驱动层中的扇出区沿基板厚度方向弯折并贴附固定于基板的背面，在基板的侧面形成弯折部，另外通过将扇出区相对的一侧的对应显示区域内的基板切割去除，以形成一个空置的空间，该空间用于拼接时容纳相邻拼接显示单元凸出的弯折部。通过该设计，即可为拼接显示单元之间的走线提供一个合适的容纳空间，防止其因拼接而受到挤压导致弯折甚至断线，有效提高拼接显示单元的生产良率以及可靠性，另一方面，将一拼接显示面板的弯折部隐藏于另一拼接显示面板的显示区之下，实现真正地无缝拼接。\n\n附图说明\n\n[0031]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0032]图1是本发明实施例提供一种拼接显示面板中的拼接显示单元的截面结构示意图；\n\n[0033]图2是本发明实施例提供一种拼接显示面板中的制备方法的文字流程示意图；\n\n[0034]图3A-3I是本发明实施例提供一种拼接显示面板中的制备方法的结构流程示意图。\n\n具体实施方式\n\n[0035]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0036]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0037]在本申请中，“示例性”一词用来表示“用作例子、例证或说明”。本申请中被描述为“示例性”的任何实施例不一定被解释为比其它实施例更优选或更具优势。为了使本领域任何技术人员能够实现和使用本发明，给出了以下描述。在以下描述中，为了解释的目的而列出了细节。应当明白的是，本领域普通技术人员可以认识到，在不使用这些特定细节的情况下也可以实现本发明。在其它实例中，不会对公知的结构和过程进行详细阐述，以避免不必要的细节使本发明的描述变得晦涩。因此，本发明并非旨在限于所示的实施例，而是与符合本申请所公开的原理和特征的最广范围相一致。\n\n[0038]本发明实施例提供一种拼接显示面板，所述拼接显示面板由多个拼接显示单元拼接而成，所述多个拼接显示单元各自独立显示，通过拼接实现大尺寸显示，其中，任意一所述的拼接显示单元的截面结构请参阅图1，具体包括如下结构。\n\n[0039]基板10，包括相对设置的第一表面（即上表面）与第二表面（即上表面），所述基板通常可以为玻璃基板；\n\n[0040]柔性衬底20，设于所述基板10的第一表面上；\n\n[0041]阵列驱动层30，设于所述柔性衬底20上，包括显示区301以及设于所述显示区外侧的至少一个扇出区302，其中，所述显示区301中通常包括多个阵列排布的薄膜晶体管，各自独立地驱动绑定于上方的微型发光二极管；\n\n[0042]以及发光层40，包括多个微型发光二极管401，通过触点402依次绑定于所述阵列驱动层30的显示区301中，示例性地，每一像素包括一个红色微型发光二极管，一个绿色微型发光二极管以及一个蓝色微型发光二极管，并通过一定的排列方式进行排布；\n\n[0043]其中，所述基板10仅设于除去所述扇出区相对的一侧的对应区域以外的显示区中，即，在扇出区302对应位置无所述基板10的阻挡，使得所述扇出区302沿所述基板10厚度方向弯折并贴附固定于所述基板10的第二表面，当然，与所述扇出区302对应位置粘附的柔性衬底20也一并弯折，所述沿基板10厚度方向弯折的部分为弯折部，所述贴附固定于所述基板10的第二表面的部分为固定部，\n\n[0044]因与所述扇出区302相对的一侧的部分显示区域内的基板10被去除，即，所述基板10的右侧边为弯折部，所述基板10的左侧边空置一部分空间，为相邻的所述拼接显示单元中扇出区的弯折部提供充足容纳空间，使得拼接显示单元相互拼接时，大大降低了因挤压造成拼接处走线弯折甚至断裂的风险，从而提高拼接显示面板的可靠性，另一方面，将一拼接显示面板的弯折部隐藏于另一拼接显示面板的显示区之下，实现真正的无缝拼接。\n\n[0045]在一些实施例中，所述扇出区302的弯折部中距相对的所述基板侧面的最大垂直距离d为0.05-2毫米，当该距离d过短时，弯折部走线存在较大的断线风险，但当该距离d过长时，需要更宽的空间进行容纳，便使得无基板10支撑的显示区域越大，此处塌陷的风险也越大，同时该距离d增大到一定程度时，对降低弯折区走线断线风险便无太大作用，综合考量，该距离d的优选范围为0.5-1.5毫米。\n\n[0046]可以理解的是，在该弯折部相对的一侧区域，所述基板10空缺部位的宽度大于等于上述的最大垂直距离d，以提供足够的空间进行容纳。\n\n[0047]在一些实施例中，通常会根据拼接显示单元的尺寸大小，设置一或两个扇出区，具体地，当拼接显示单元的尺寸较小时，金属走线也较少，通常仅设置一个扇出区；\n\n[0048]当拼接显示单元的尺寸较大时，金属走线随之增多，则会设置两个扇出区，分别设于相邻的两侧边外侧，所述两个扇出区各自的固定部层叠的贴附固定于所述基板的第二表面，图1中仅示出了一个扇出区的示意图，可以理解的是，另一扇出区在垂直于图片的方向按照相同的方式设置，另一方向对应位置的基板也存在相同的空缺空间，此处未给出具体示意图，但应当很容易理解。\n\n[0049]在一些实施例中，所述发光层30上还依次设有封装层60，所述封装层60的高度需完全覆盖所述微型发光二极管401，且封装层60上表面平整精度在±10 µm范围内，另外，所述封装层60的材料选自环氧胶或硅胶等其他透明胶料，其封装的效果不限于透明或雾面，当为透明时，对亮度的损失较小；当为雾面时，可一定程度地减少环境光镜面反射而提高显示对比度，但会造成一定程度的亮度损失，根据实际工艺需求进行选择。\n\n[0050]在一些实施例中，所述封装层60上还设有支撑层70，防止没有所述基板10支撑的显示区域，膜层发生塌陷而影响显示效果，所述支撑层70的材料通常为具有一定刚性的材料，例如支撑层70可以为一层偏光片，不仅可起到支撑作用，还可一定程度地减少环境光镜面反射而提高显示对比度，当然所述支撑层70的材料还可为亚克力等其他材料，本发明对此无特殊的限定。\n\n[0051]在一些实施例中，所述扇出区302的固定部通过双面胶层80贴附固定于所述基板10的第二表面，且所述固定部远离所述基板10的一侧面还设有保护层90，防止此处金属走线裸露而受到破坏。\n\n[0052]另外，图1中的切割保护膜50与显示效果无关，用于在制备中实现精准切割，详见后述实施例。\n\n[0053]需要说明的是，上述实施例中仅描述了上述结构，可以理解的是，除了上述结构之外，还可以根据需要包括任何其他的必要结构，例如绑定于扇出区走线上的cof(chip onFPC)，具体此处不作限定。\n\n[0054]在本发明的另一实施例中，还提供了一种拼接显示面板的制备方法，请结合图2以及图3A-3I，所述制备方法包括如下步骤：\n\n[0055]S10:提供一基板，在所述基板的第一表面上形成柔性衬底；\n\n[0056]S20:在所述柔性衬底上形成阵列驱动层，得到柔性驱动基板，所述的阵列驱动层包括多个各自独立地阵列驱动；\n\n[0057]S30:对所述柔性驱动基板进行切割，得到多块拼接柔性驱动基板，请参阅图3A，所述拼接柔性驱动基板同样由下至上依次包括基板10，柔性衬底20以及阵列驱动层30，每一所述的拼接柔性驱动基板中的阵列驱动层30包括显示区301以及设于所述显示区301外侧的至少一个扇出区302；\n\n[0058]S40:请参阅图3B,将多个微型发光二极管401转移至所述拼接柔性驱动基板上，并绑定至所述阵列驱动层30的显示区301上，具体地，通常先印刷锡膏形成触点402，再将所述微型发光二极管401通过触点402进行绑定，即形成发光层40，其中所述微型发光二极管401的转移技术通常采用巨量转移技术；\n\n[0059]S50:请参阅图3C，在所述多个微型发光二极管401上形成封装层60；\n\n[0060]S60:切割除去非显示区域对应的所述封装层，并切割除去非显示区域，以及所述扇出区相对的一侧的部分显示区域对应的所述基板，所述切割工艺通常可采用水刀切割工艺。\n\n[0061]在一实施方式中，当所述显示区外侧设有两个扇出区，所述两个扇出区分别设于相邻的两侧边外侧时，所述步骤S60通常包括下述步骤：\n\n[0062]S601:请参阅图3D，对向所述基板10的第一表面，以所述显示区301中未设有所述扇出区的侧边的外边缘作为第一切割边进行切割，此切割深度为D1,即由上至下切到底，直至去除所述基板10，以及以所述显示区301中设有所述扇出区的侧边的外边缘作为第二切割边进行切割，此切割深度为D2，由上至下切割至去除所述封装层60，封装层60以下的膜层仍保留。\n\n[0063]上述的第一切割边与第二切割边请参阅图3E提供的平面切割示意图，其中，A1为显示区轮廓，A2为扇出区轮廓，A3为封装层轮廓，L1为第一切割边，L2为第二切割边，所述第一切割边L1与第二切割边L2均在对应地显示区侧边外且平行于对应地显示区侧边，即切割后保留的封装层区域大小略大于显示区区域，示例性地，在左右方向上，封装层与显示区的宽度差与显示区中像素间距（左右方向上）相当，使得拼接后的显示面板中各像素均匀分布。\n\n[0064]S602: 请参阅图3F，对向所述基板的第二表面，以所述显示区301中未设有所述扇出区的侧边以内的边作为第三切割边进行切割，此切割深度为D3，小于所述基板10的厚度，以及以所述显示区301中设有所述扇出区的侧边外边缘作为第四切割边进行切割，此切割深度为D3，小于所述基板10的厚度，在未完全切割至柔性衬底20处时，结合剥离工艺使得部分的所述基板20与所述柔性衬底20剥离而去除，仅保留所述第三切割边与所述第四切割边以内的部分显示区对应的所述基板，即形成如图3H所示的结构。\n\n[0065]上述的第三切割边与第四切割边请参阅图3G提供的平面切割示意图，其中，A1为显示区轮廓，A2为扇出区轮廓，A4为基板轮廓，L3为第三切割边，L4为第四切割边，所述第三切割边L3在对应地显示区侧边以内且平行于对应地显示区侧边，所述第三切割边L3与对应显示区侧边的垂直距离大于等于对应的所述扇出区的弯折部中距相对的所述基板侧面的最大垂直距离d，所述第四切割边L4在对应地显示区侧边外且平行于对应地显示区侧边，通常情况下，所述第四切割边L4以及第二切割边L2相对显示区的位置大致相同。\n\n[0066]另外，在两个扇出区相接之处还需进行直角切割（被切割去除的直角处未设计图形），防止两个扇出区在弯折时发生相互干涉。\n\n[0067]S70:请参阅图3I，将所述扇出区302沿所述基板10厚度方向弯折并贴附固定于所述基板10的与所述第一表面相对的第二表面上，即得到拼接显示单元，所述沿基板厚度方向弯折的部分为弯折部，所述贴附固定于所述基板第二表面的部分为固定部；以及，\n\n[0068]S80:将多个所述的拼接显示单元通过拼接工艺形成拼接显示面板，即可将一拼接显示单元的所述弯折部隐藏于相邻拼接显示单元中基板形成的空缺处，根据所需的拼接显示面板的尺寸，选择合适个数的拼接显示单元依次拼接形成。\n\n[0069]在一些实施例中，请参阅图3C，在所述步骤S50前，在所述第二切割边的位置贴附透明的切割保护膜50，所述切割保护膜50部分贴附于第二切割边相邻的微型发光二极管401上，部分贴附于第二切割边相邻的阵列驱动层30的扇出区301上，形成阶梯的结构，用以防止切割时下方的扇出区走线受损，所述切割保护膜50的材料通常至少需耐120℃的温度。\n\n[0070]在一些实施例中，在所述步骤S50前，通常还需在阵列驱动层30的扇出区301上贴附PET离型膜（图中未示出），因后续形成封装层的时候，为了保证封装层有效区的平整度，封装层的范围会外扩到扇出区上，而封装层的材料通常为胶层，在切割去除封装层非有效区时，会对下方黏附的扇出区走线造成损伤，而在设置所述PET离型膜后，可避免该损伤，所述PET离型膜在切割后撕除。\n\n[0071]在一些实施例中，请参阅图3I，所述扇出区的弯折部中距相对的所述基板侧面的最大垂直距离d为0.05-2毫米。\n\n[0072]在一些实施例中，请参阅图3C，在所述步骤S50中，在形成的所述封装层60后，还在所述封装层上形成一支撑层70。\n\n[0073]在一些实施例中，请参阅图3I，在所述步骤S70中，所述扇出区的固定部通过双面胶层80贴附固定于所述基板10的第二表面，且还在所述固定部远离所述基板10的一侧面形成保护层90。当所述显示区外侧设有两个扇出区时，所述两个扇出区各自的固定部层叠的贴附固定于所述基板的第二表面，且两个固定部之间同样通过所述双面胶层进行粘结。\n\n[0074]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见上文针对其他实施例的详细描述，此处不再赘述。\n\n[0075]以上对本发明实施例所提供的一种拼接显示面板及其制备方法进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种拼接显示面板及其制备方法。\n\n背景技术\n\n[0002]Micro LED(Micro Light-Emitting Diode,微型发光二极管)作为下一代显示技术，凭借其可实现无缝拼接，以及色彩还原性强，视角宽，高刷新率，高对比度，高稳定性，低功耗，高灰度等优势，相较目前应用的液晶显示技术和有机发光二极管显示技术具有更优异的综合性能，成为当前显示技术的研究热点之一。\n\n[0003]为了实现真正地无缝拼接，实现从小屏到大屏的显示，相邻的拼接显示单元之间的金属走线易受到相互挤压，存在着较大的弯折断线的风险，从而影响显示。\n\n发明内容\n\n[0004]本发明提供一种拼接显示面板及其制备方法，可有效改善拼接显示单元之间走线发生挤压短线的风险。\n\n[0005]为解决上述问题，第一方面，本发明提供一种拼接显示面板，所述拼接显示面板由多个拼接显示单元拼接而成，其中，任意一所述的拼接显示单元包括：\n\n[0006]基板，包括相对设置的第一表面与第二表面；\n\n[0007]柔性衬底，设于所述基板的第一表面上；\n\n[0008]阵列驱动层，设于所述柔性衬底上，包括显示区以及设于所述显示区外侧的至少一个扇出区；以及\n\n[0009]发光层，包括绑定于阵列驱动层的显示区上的多个微型发光二极管，\n\n[0010]其中，所述扇出区沿所述基板厚度方向弯折并贴附固定于所述基板的第二表面，所述扇出区包括沿基板厚度方向弯折的弯折部以及贴附固定于所述基板的第二表面的固定部，且所述基板仅设于除去所述扇出区相对的一侧的对应区域以外的显示区中，为相邻的所述拼接显示单元中扇出区的弯折部提供容纳空间。\n\n[0011]进一步地，所述扇出区的弯折部中距相对的所述基板侧面的最大垂直距离为0.05-2毫米。\n\n[0012]进一步地，在所述阵列驱动层中，所述显示区外侧设有两个扇出区，分别设于相邻的两侧边外侧，所述两个扇出区各自的固定部层叠的贴附固定于所述基板的第二表面。\n\n[0013]进一步地，所述发光层上还依次设有封装层以及支撑层。\n\n[0014]进一步地，所述扇出区的固定部通过双面胶层贴附固定于所述基板的第二表面，且所述固定部远离所述基板的一侧面还设有保护层。\n\n[0015]另一方面，本发明还提供了一种拼接显示面板的制备方法，包括如下步骤：\n\n[0016]S10:提供一基板，在所述基板的第一表面上形成柔性衬底；\n\n[0017]S20:在所述柔性衬底上形成阵列驱动层，得到柔性驱动基板；\n\n[0018]S30:对所述柔性驱动基板进行切割，得到多块拼接柔性驱动基板，每一所述的拼接柔性驱动基板中的阵列驱动层包括显示区以及设于所述显示区外侧的至少一个扇出区；\n\n[0019]S40:将多个微型发光二极管转移至所述拼接柔性驱动基板上，并绑定至所述阵列驱动层的显示区上；\n\n[0020]S50:在所述多个微型发光二极管上形成封装层；\n\n[0021]S60:切割除去非显示区域对应的所述封装层，并切割除去非显示区域，以及所述扇出区相对的一侧的部分显示区域对应的所述基板；\n\n[0022]S70:将所述扇出区沿所述基板厚度方向弯折并贴附固定于所述基板的与所述第一表面相对的第二表面上，即得到拼接显示单元，所述扇出区包括沿基板厚度方向弯折的弯折部以及贴附固定于所述基板的第二表面的固定部；以及\n\n[0023]S80:将多个所述的拼接显示单元通过拼接工艺形成拼接显示面板。\n\n[0024]进一步地，当所述显示区外侧设有两个扇出区，所述两个扇出区分别设于相邻的两侧边外侧时，所述步骤S60包括如下步骤：\n\n[0025]S601:对向所述基板的第一表面，以所述显示区中未设有所述扇出区的侧边的外边缘作为第一切割边进行切割至去除所述基板，以及以所述显示区中设有所述扇出区的侧边的外边缘作为第二切割边进行切割至去除所述封装层；\n\n[0026]S602:对向所述基板的第二表面，以所述显示区中未设有所述扇出区的侧边以内的边作为第三切割边进行切割，所述第三切割边平行于对应的侧边，以及以所述显示区中设有所述扇出区的侧边外边缘作为第四切割边进行切割，并且通过剥离工艺使得部分的所述基板与所述柔性衬底剥离而去除，仅保留所述第三切割边与所述第四切割边以内的部分显示区对应的所述基板。\n\n[0027]进一步地，在所述步骤S50前，在所述第二切割边的位置贴附透明的切割保护膜。\n\n[0028]进一步地，在所述步骤S70中，所述扇出区的弯折部中距相对的所述基板侧面的最大垂直距离为0.05-2毫米。\n\n[0029]进一步地，在所述步骤S50中，在形成的所述封装层后，还在所述封装层上形成一支撑层。\n\n[0030]有益效果：本发明提供了一种拼接显示面板及其制备方法，所述拼接显示面板由多个拼接显示单元拼接而得，在每一所述的拼接显示单元中，依次包括基板，柔性衬底，阵列驱动层以及发光层，其中，阵列驱动层中的扇出区沿基板厚度方向弯折并贴附固定于基板的背面，在基板的侧面形成弯折部，另外通过将扇出区相对的一侧的对应显示区域内的基板切割去除，以形成一个空置的空间，该空间用于拼接时容纳相邻拼接显示单元凸出的弯折部。通过该设计，即可为拼接显示单元之间的走线提供一个合适的容纳空间，防止其因拼接而受到挤压导致弯折甚至断线，有效提高拼接显示单元的生产良率以及可靠性，另一方面，将一拼接显示面板的弯折部隐藏于另一拼接显示面板的显示区之下，实现真正地无缝拼接。\n\n附图说明\n\n[0031]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0032]图1是本发明实施例提供一种拼接显示面板中的拼接显示单元的截面结构示意图；\n\n[0033]图2是本发明实施例提供一种拼接显示面板中的制备方法的文字流程示意图；\n\n[0034]图3A-3I是本发明实施例提供一种拼接显示面板中的制备方法的结构流程示意图。\n\n具体实施方式\n\n[0035]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0036]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0037]在本申请中，“示例性”一词用来表示“用作例子、例证或说明”。本申请中被描述为“示例性”的任何实施例不一定被解释为比其它实施例更优选或更具优势。为了使本领域任何技术人员能够实现和使用本发明，给出了以下描述。在以下描述中，为了解释的目的而列出了细节。应当明白的是，本领域普通技术人员可以认识到，在不使用这些特定细节的情况下也可以实现本发明。在其它实例中，不会对公知的结构和过程进行详细阐述，以避免不必要的细节使本发明的描述变得晦涩。因此，本发明并非旨在限于所示的实施例，而是与符合本申请所公开的原理和特征的最广范围相一致。\n\n[0038]本发明实施例提供一种拼接显示面板，所述拼接显示面板由多个拼接显示单元拼接而成，所述多个拼接显示单元各自独立显示，通过拼接实现大尺寸显示，其中，任意一所述的拼接显示单元的截面结构请参阅图1，具体包括如下结构。\n\n[0039]基板10，包括相对设置的第一表面（即上表面）与第二表面（即上表面），所述基板通常可以为玻璃基板；\n\n[0040]柔性衬底20，设于所述基板10的第一表面上；\n\n[0041]阵列驱动层30，设于所述柔性衬底20上，包括显示区301以及设于所述显示区外侧的至少一个扇出区302，其中，所述显示区301中通常包括多个阵列排布的薄膜晶体管，各自独立地驱动绑定于上方的微型发光二极管；\n\n[0042]以及发光层40，包括多个微型发光二极管401，通过触点402依次绑定于所述阵列驱动层30的显示区301中，示例性地，每一像素包括一个红色微型发光二极管，一个绿色微型发光二极管以及一个蓝色微型发光二极管，并通过一定的排列方式进行排布；\n\n[0043]其中，所述基板10仅设于除去所述扇出区相对的一侧的对应区域以外的显示区中，即，在扇出区302对应位置无所述基板10的阻挡，使得所述扇出区302沿所述基板10厚度方向弯折并贴附固定于所述基板10的第二表面，当然，与所述扇出区302对应位置粘附的柔性衬底20也一并弯折，所述沿基板10厚度方向弯折的部分为弯折部，所述贴附固定于所述基板10的第二表面的部分为固定部，\n\n[0044]因与所述扇出区302相对的一侧的部分显示区域内的基板10被去除，即，所述基板10的右侧边为弯折部，所述基板10的左侧边空置一部分空间，为相邻的所述拼接显示单元中扇出区的弯折部提供充足容纳空间，使得拼接显示单元相互拼接时，大大降低了因挤压造成拼接处走线弯折甚至断裂的风险，从而提高拼接显示面板的可靠性，另一方面，将一拼接显示面板的弯折部隐藏于另一拼接显示面板的显示区之下，实现真正的无缝拼接。\n\n[0045]在一些实施例中，所述扇出区302的弯折部中距相对的所述基板侧面的最大垂直距离d为0.05-2毫米，当该距离d过短时，弯折部走线存在较大的断线风险，但当该距离d过长时，需要更宽的空间进行容纳，便使得无基板10支撑的显示区域越大，此处塌陷的风险也越大，同时该距离d增大到一定程度时，对降低弯折区走线断线风险便无太大作用，综合考量，该距离d的优选范围为0.5-1.5毫米。\n\n[0046]可以理解的是，在该弯折部相对的一侧区域，所述基板10空缺部位的宽度大于等于上述的最大垂直距离d，以提供足够的空间进行容纳。\n\n[0047]在一些实施例中，通常会根据拼接显示单元的尺寸大小，设置一或两个扇出区，具体地，当拼接显示单元的尺寸较小时，金属走线也较少，通常仅设置一个扇出区；\n\n[0048]当拼接显示单元的尺寸较大时，金属走线随之增多，则会设置两个扇出区，分别设于相邻的两侧边外侧，所述两个扇出区各自的固定部层叠的贴附固定于所述基板的第二表面，图1中仅示出了一个扇出区的示意图，可以理解的是，另一扇出区在垂直于图片的方向按照相同的方式设置，另一方向对应位置的基板也存在相同的空缺空间，此处未给出具体示意图，但应当很容易理解。\n\n[0049]在一些实施例中，所述发光层30上还依次设有封装层60，所述封装层60的高度需完全覆盖所述微型发光二极管401，且封装层60上表面平整精度在±10 µm范围内，另外，所述封装层60的材料选自环氧胶或硅胶等其他透明胶料，其封装的效果不限于透明或雾面，当为透明时，对亮度的损失较小；当为雾面时，可一定程度地减少环境光镜面反射而提高显示对比度，但会造成一定程度的亮度损失，根据实际工艺需求进行选择。\n\n[0050]在一些实施例中，所述封装层60上还设有支撑层70，防止没有所述基板10支撑的显示区域，膜层发生塌陷而影响显示效果，所述支撑层70的材料通常为具有一定刚性的材料，例如支撑层70可以为一层偏光片，不仅可起到支撑作用，还可一定程度地减少环境光镜面反射而提高显示对比度，当然所述支撑层70的材料还可为亚克力等其他材料，本发明对此无特殊的限定。\n\n[0051]在一些实施例中，所述扇出区302的固定部通过双面胶层80贴附固定于所述基板10的第二表面，且所述固定部远离所述基板10的一侧面还设有保护层90，防止此处金属走线裸露而受到破坏。\n\n[0052]另外，图1中的切割保护膜50与显示效果无关，用于在制备中实现精准切割，详见后述实施例。\n\n[0053]需要说明的是，上述实施例中仅描述了上述结构，可以理解的是，除了上述结构之外，还可以根据需要包括任何其他的必要结构，例如绑定于扇出区走线上的cof(chip onFPC)，具体此处不作限定。\n\n[0054]在本发明的另一实施例中，还提供了一种拼接显示面板的制备方法，请结合图2以及图3A-3I，所述制备方法包括如下步骤：\n\n[0055]S10:提供一基板，在所述基板的第一表面上形成柔性衬底；\n\n[0056]S20:在所述柔性衬底上形成阵列驱动层，得到柔性驱动基板，所述的阵列驱动层包括多个各自独立地阵列驱动；\n\n[0057]S30:对所述柔性驱动基板进行切割，得到多块拼接柔性驱动基板，请参阅图3A，所述拼接柔性驱动基板同样由下至上依次包括基板10，柔性衬底20以及阵列驱动层30，每一所述的拼接柔性驱动基板中的阵列驱动层30包括显示区301以及设于所述显示区301外侧的至少一个扇出区302；\n\n[0058]S40:请参阅图3B,将多个微型发光二极管401转移至所述拼接柔性驱动基板上，并绑定至所述阵列驱动层30的显示区301上，具体地，通常先印刷锡膏形成触点402，再将所述微型发光二极管401通过触点402进行绑定，即形成发光层40，其中所述微型发光二极管401的转移技术通常采用巨量转移技术；\n\n[0059]S50:请参阅图3C，在所述多个微型发光二极管401上形成封装层60；\n\n[0060]S60:切割除去非显示区域对应的所述封装层，并切割除去非显示区域，以及所述扇出区相对的一侧的部分显示区域对应的所述基板，所述切割工艺通常可采用水刀切割工艺。\n\n[0061]在一实施方式中，当所述显示区外侧设有两个扇出区，所述两个扇出区分别设于相邻的两侧边外侧时，所述步骤S60通常包括下述步骤：\n\n[0062]S601:请参阅图3D，对向所述基板10的第一表面，以所述显示区301中未设有所述扇出区的侧边的外边缘作为第一切割边进行切割，此切割深度为D1,即由上至下切到底，直至去除所述基板10，以及以所述显示区301中设有所述扇出区的侧边的外边缘作为第二切割边进行切割，此切割深度为D2，由上至下切割至去除所述封装层60，封装层60以下的膜层仍保留。\n\n[0063]上述的第一切割边与第二切割边请参阅图3E提供的平面切割示意图，其中，A1为显示区轮廓，A2为扇出区轮廓，A3为封装层轮廓，L1为第一切割边，L2为第二切割边，所述第一切割边L1与第二切割边L2均在对应地显示区侧边外且平行于对应地显示区侧边，即切割后保留的封装层区域大小略大于显示区区域，示例性地，在左右方向上，封装层与显示区的宽度差与显示区中像素间距（左右方向上）相当，使得拼接后的显示面板中各像素均匀分布。\n\n[0064]S602: 请参阅图3F，对向所述基板的第二表面，以所述显示区301中未设有所述扇出区的侧边以内的边作为第三切割边进行切割，此切割深度为D3，小于所述基板10的厚度，以及以所述显示区301中设有所述扇出区的侧边外边缘作为第四切割边进行切割，此切割深度为D3，小于所述基板10的厚度，在未完全切割至柔性衬底20处时，结合剥离工艺使得部分的所述基板20与所述柔性衬底20剥离而去除，仅保留所述第三切割边与所述第四切割边以内的部分显示区对应的所述基板，即形成如图3H所示的结构。\n\n[0065]上述的第三切割边与第四切割边请参阅图3G提供的平面切割示意图，其中，A1为显示区轮廓，A2为扇出区轮廓，A4为基板轮廓，L3为第三切割边，L4为第四切割边，所述第三切割边L3在对应地显示区侧边以内且平行于对应地显示区侧边，所述第三切割边L3与对应显示区侧边的垂直距离大于等于对应的所述扇出区的弯折部中距相对的所述基板侧面的最大垂直距离d，所述第四切割边L4在对应地显示区侧边外且平行于对应地显示区侧边，通常情况下，所述第四切割边L4以及第二切割边L2相对显示区的位置大致相同。\n\n[0066]另外，在两个扇出区相接之处还需进行直角切割（被切割去除的直角处未设计图形），防止两个扇出区在弯折时发生相互干涉。\n\n[0067]S70:请参阅图3I，将所述扇出区302沿所述基板10厚度方向弯折并贴附固定于所述基板10的与所述第一表面相对的第二表面上，即得到拼接显示单元，所述沿基板厚度方向弯折的部分为弯折部，所述贴附固定于所述基板第二表面的部分为固定部；以及，\n\n[0068]S80:将多个所述的拼接显示单元通过拼接工艺形成拼接显示面板，即可将一拼接显示单元的所述弯折部隐藏于相邻拼接显示单元中基板形成的空缺处，根据所需的拼接显示面板的尺寸，选择合适个数的拼接显示单元依次拼接形成。\n\n[0069]在一些实施例中，请参阅图3C，在所述步骤S50前，在所述第二切割边的位置贴附透明的切割保护膜50，所述切割保护膜50部分贴附于第二切割边相邻的微型发光二极管401上，部分贴附于第二切割边相邻的阵列驱动层30的扇出区301上，形成阶梯的结构，用以防止切割时下方的扇出区走线受损，所述切割保护膜50的材料通常至少需耐120℃的温度。\n\n[0070]在一些实施例中，在所述步骤S50前，通常还需在阵列驱动层30的扇出区301上贴附PET离型膜（图中未示出），因后续形成封装层的时候，为了保证封装层有效区的平整度，封装层的范围会外扩到扇出区上，而封装层的材料通常为胶层，在切割去除封装层非有效区时，会对下方黏附的扇出区走线造成损伤，而在设置所述PET离型膜后，可避免该损伤，所述PET离型膜在切割后撕除。\n\n[0071]在一些实施例中，请参阅图3I，所述扇出区的弯折部中距相对的所述基板侧面的最大垂直距离d为0.05-2毫米。\n\n[0072]在一些实施例中，请参阅图3C，在所述步骤S50中，在形成的所述封装层60后，还在所述封装层上形成一支撑层70。\n\n[0073]在一些实施例中，请参阅图3I，在所述步骤S70中，所述扇出区的固定部通过双面胶层80贴附固定于所述基板10的第二表面，且还在所述固定部远离所述基板10的一侧面形成保护层90。当所述显示区外侧设有两个扇出区时，所述两个扇出区各自的固定部层叠的贴附固定于所述基板的第二表面，且两个固定部之间同样通过所述双面胶层进行粘结。\n\n[0074]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见上文针对其他实施例的详细描述，此处不再赘述。\n\n[0075]以上对本发明实施例所提供的一种拼接显示面板及其制备方法进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10802, 23856, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示面板及其制作方法、显示终端。\n\n背景技术\n\n[0002]在微发光二极管(micro light emitting diode,Micro LED)显示面板的制作过程中，需要将微小的Micro LED芯片从原始衬底转移到接受基板上排列成阵列，其中涉及巨量且微小的Micro LED芯片精确转移、绑定等工艺。\n\n[0003]目前已知的Micro LED芯片与接收基板上导电电极绑定连接方案中，大多数方法为将Micro LED芯片转移到接受基板并与接收基板上预图案化的绑定材料进行粘合绑定，绑定材料较多采用AuSn、InSn等类似的低熔点金属，绑定的过程涉及绑定材料固相-液相-固相转化，较为复杂，容易造成Micro LED芯片绑定不良，并导致修复成本增加的问题。\n\n[0004]综上所述，现有微发光二极管显示面板在将Micro LED芯片转移至接收基板的过程中存在绑定不良并导致修复成本增加的问题。故，有必要提供一种显示面板及其制作方法、显示终端来改善这一缺陷。\n\n发明内容\n\n[0005]本揭示实施例提供一种显示面板及其制作方法、显示终端，用于解决微发光二极管显示面板在转移绑定Micro LED芯片过程中存在绑定不良并导致修复成本增加的问题。\n\n[0006]本揭示实施例提供一种显示面板，包括：\n\n[0007]衬底基板；\n\n[0008]薄膜晶体管阵列层，设置于所述衬底基板上，包括阵列排布的多个薄膜晶体管以及多条信号走线；\n\n[0009]导电电极层，设置于所述薄膜晶体管阵列层远离所述衬底基板的一侧上，包括图案化的多个导电电极，所述导电电极分别连接所述薄膜晶体管和所述信号走线；\n\n[0010]像素定义层，设置于所述薄膜晶体管阵列层远离所述衬底基板的一侧上并覆盖所述导电电极层，所述像素定义层上设有阵列排布的多个凹槽，所述凹槽暴露出部分所述导电电极；以及\n\n[0011]多个发光器件，所述发光器件粘附于相邻两个所述凹槽之间的所述像素定义层上，所述发光器件与相邻两个所述凹槽之间各形成一微腔结构，所述发光器件通过填充至所述微腔结构内的导电材料与所述导电电极电性连接。\n\n[0012]根据本揭示一实施例，所述发光器件在所述衬底基板所在平面的正投影区域的两侧均位于相邻两个所述凹槽在所述衬底基板所在平面的正投影区域内。\n\n[0013]根据本揭示一实施例，所述像素定义层中粘附有所述发光器件的部分的高度小于未粘附有所述发光器件的部分的高度。\n\n[0014]根据本揭示一实施例，所述凹槽在所述像素定义层所在平面的开口形状包括矩形、圆形或者回形。\n\n[0015]根据本揭示一实施例，所述凹槽在所述像素定义层所在平面的开口形状为回形，所述凹槽中设有支撑柱，所述发光器件靠近所述衬底基板的一侧粘附于所述支撑柱上。\n\n[0016]根据本揭示一实施例，所述支撑柱的高度与粘附有所述发光器件的所述像素定义层的高度相同，且所述发光器件在所述衬底基板所在平面的正投影区域覆盖所述支撑柱在所述衬底基板所在平面的正投影区域。\n\n[0017]根据本揭示一实施例，所述发光器件为mini LED芯片或者为micro LED芯片。\n\n[0018]本揭示实施例提供一种显示终端，包括终端主体和如上述的显示面板，所述显示面板设置于所述终端主体上。\n\n[0019]本揭示实施例还提供一种显示面板的制作方法，包括：\n\n[0020]提供衬底基板，在所述衬底基板上形成层叠设置的薄膜晶体管阵列层和导电电极层，所述导电电极层包括图案化的多个导电电极；\n\n[0021]在所述薄膜晶体管阵列层上涂布有机光阻材料，刻蚀所述有机光阻材料形成像素定义层以及间隔排布的多个暴露出部分所述像素电极的凹槽；\n\n[0022]在所述像素定义层未固化之前，将多个发光器件转移至所述有机光阻材料上，使所述发光器件与相邻两个所述凹槽之间的所述像素定义层粘结，所述发光器件与相邻两个所述凹槽之间各形成一微腔结构；\n\n[0023]在所述凹槽内填充导电材料，并对所述导电材料进行预固化，以使所述发光器件通过所述导电材料与所述导电电极电性连接；\n\n[0024]对转移至所述衬底基板上的所述发光器件进行检测并修复，检测以及修复完成后对所述像素定义层和所述导电材料再次进行固化；以及\n\n[0025]在所述像素定义层上形成覆盖所述发光器件的封装层。\n\n[0026]根据本揭示一实施例，所述导电材料包括纳米导电银浆。\n\n[0027]本揭示实施例的有益效果：本揭示实施例通过在像素定义层上设置阵列排布的多个暴露出部分导电电极的凹槽，利用像素定义层的材料在未固化状态下的粘性将发光器件粘附于相邻两个凹槽之间的像素定义层上，以对发光器件进行绑定前的初步固定，再通过填充至发光器件与相邻两个凹槽之间各形成的微腔结构内的导电材料将发光器件与导电电极绑定连接，以此防止发光器件绑定不良情况的发生，并降低修复成本。\n\n附图说明\n\n[0028]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是揭示的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0029]图1为本揭示实施例提供的显示面板的平面示意图；\n\n[0030]图2为图1中显示面板沿A-A方向的截面结构示意图；\n\n[0031]图3为绑定发光器件前像素定义层所在平面的示意图；\n\n[0032]图4为绑定发光器件后像素定义层所在平面的示意图；\n\n[0033]图5为本揭示实施例提供的另一种显示面板沿图1中A-A方向的截面结构示意图；\n\n[0034]图6为图5中绑定发光器件前像素定义层所在平面的示意图；\n\n[0035]图7为图5中绑定发光器件后像素定义层所在平面的示意图；\n\n[0036]图8为本揭示实施例提供的显示终端的结构示意图；\n\n[0037]图9为本揭示实施例提供的显示面板的制作方法的流程示意图；\n\n[0038]图10A～10H为本揭示实施例提供的制作方法对应的显示面板的结构示意图。\n\n具体实施方式\n\n[0039]以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。\n\n[0040]下面结合附图和具体实施例对本揭示做进一步的说明。\n\n[0041]本揭示实施例提供一种显示面板，下面结合图1至图4进行详细说明，其中图1为本揭示实施例提供的显示面板的平面示意图，图2为图1中显示面板沿A-A方向的截面结构示意图，图3为像素定义层所在平面的示意图，图4为绑定发光器件后像素定义层所在平面的示意图。\n\n[0042]所述显示面板1包括衬底基板11、设置于所述衬底基板11上的薄膜晶体管阵列层12、设置于所述薄膜晶体管阵列层12远离衬底基板11一侧上的导电电极层13、设置于所述薄膜晶体管阵列层12上并覆盖所述导电电极层13的像素定义层14、阵列排布于所述像素定义层14上的多个发光器件15以及设置于所述像素定义层14上并覆盖多个所述发光器件15的封装层15。\n\n[0043]在本揭示实施例中所述发光器件15为Micro LED芯片，即所述显示面板1为MicroLED显示面板。当然，在一些实施例中，所述发光器件15也可以为Mini LED芯片等发光器件，此处不做限制。\n\n[0044]如图2所示，所述薄膜晶体管阵列层12包括绝缘层121、阵列排布的多个薄膜晶体管122以及设置于绝缘层121上的钝化保护层123，薄膜晶体管122包括层叠设置的有源层1221、栅极绝缘层1222、栅极线层1223以及设置于绝缘层121上的源极和漏极1224，所述薄膜晶体管阵列层122中还包括多条信号走线124，多条所述信号走线124分别与栅极线层1223或者漏极1224同层设置。导电电极层13包括图案化的多个导电电极131，所述导电电极131分别连接薄膜晶体管122的漏极1224以及信号走线124。\n\n[0045]在本揭示实施例中，像素定义层14上设有阵列排布的多个凹槽143，所述凹槽143贯穿所述像素定义层14并暴露出位于像素定义层14底部的部分导电电极131。多个所述凹槽143中每相邻两个凹槽143形成一凹槽组对应于一个发光器件143，多个所述凹槽组按照显示面板1的像素排列方式阵列排布。\n\n[0046]具体地，所述发光器件15粘附于所述凹槽组中相邻两个凹槽143之间的像素定义层143上，设定像素定义层143中粘附有发光器件15的部分为第一部分141，未粘附有发光器件15的部分为第二部分142，在所述像素定义层14的材料呈未固化状态下，利用其粘性可以对发光器件15进行绑定前的初步固定，以防止发光器件15发生偏移而导致绑定不良。\n\n[0047]发光器件15与相邻两个凹槽143之间各自形成一微腔结构16，在向凹槽143内填充导电材料17时，微腔结构16有利于导电材料17产生液体毛细现象，从而便于导电材料17渗透至凹槽143内部以及发光器件15与导电电极131之间，使得发光器件15的第一引脚151和第二引脚152分别通过所述导电材料17与导电电极131绑定连接，以此提高发光器件15与导电电极131绑定连接的稳定性，从而防止发光器件15绑定不良情况的发生。\n\n[0048]在本揭示实施例中，所述导电材料17为液态的纳米导电银浆，其固化温度较低、黏结强度极高且电性能稳定，可以有效提高发光器件15与导电电极131绑定连接的稳定性。当然，在一些实施例中，所述导电材料17还可以为其他液态导电材料，此处不做限制。\n\n[0049]进一步的，如图2和图4所示，发光器件15在衬底基板11所在平面的正投影区域的两侧均位于相邻两个凹槽143在衬底基板11所在平面的正投影区域内，以此保证凹槽143两侧的开口未被发光器件15遮挡，在将发光器件15粘附于像素定义层14的第一部分141上后，在凹槽143开口侧通过喷墨打印或者其他方式填充导电材料17时也不会受发光器件15的影响。\n\n[0050]进一步的，参考图2，所述像素定义层14中粘附有发光器件15的第一部分141的高度要小于未粘附有所述发光器件15的第二部分142的高度，以此使得发光器件15的第一引脚151和第二引脚152均位于凹槽143的开口内部，仅需在凹槽143内填充导电材料17即可使得发光器件15与导电电极131绑定连接，从而可以防止导电材料17溢出至凹槽143的外侧，在保证绑定连接的稳定性的同时，不影响显示面板的显示效果。\n\n[0051]进一步的，参考图2和图3，所述凹槽143在所述像素定义层14所在平面的开口形状为矩形，所述凹槽143沿垂直于所述像素定义层14所在平面方向的截面形状为倒置梯形。当然，在一些实施例中，所述凹槽143在所述像素定义层14所在平面的开口形状也可以圆形、椭圆形或者其他多边形结构，其沿垂直于像素定义层14所在平面方向的截面形状还可以为梯形、矩形等多边形结构，均可以实现与上述形状相同的技术效果，具体形状可以根据实际需求以及制作工艺进行设置，此处不做限制。\n\n[0052]本揭示实施例还提供另一种显示面板，如图5至图7所示，其中图5为本揭示实施例提供的另一种显示面板沿图1中A-A方向的截面结构示意图，图6为本揭示实施例中像素定义层所在平面的示意图，图7为本揭示实施例中绑定发光器件后像素定义层所在平面的示意图。\n\n[0053]参照图5至图7，本揭示实施例所提供的显示面板的结构与上述显示面板的结构大致相同，区别之处在于，本揭示实施例所提供的显示面板中凹槽143在所述像素定义层14所在平面的开口形状为回形，与所述发光器件15相对的两个回形的凹槽143中各设有一支撑柱144，所述支撑柱144由像素定义层14刻蚀形成凹槽143的制程中形成，所述发光器件15靠近所述衬底基板11的一侧粘附于所述支撑柱144上，所述支撑柱144与第一部分141的作用相同，用于支撑并粘附固定所述发光器件15。当然，单个所述凹槽143中支撑柱144的数量也不仅限于本揭示实施例中的1个，在一些实施例中，可以根据实际需求设置间隔排列的两个或者两个以上的支撑柱144用于支撑发光器件，此处不做限制。\n\n[0054]具体地，所述支撑柱144的高度与像素定义层14中第一部分141的高度相同，均低于未粘附有发光器件15的第二部分142的高度，以此保证发光器件15能够平整的粘附于像素定义层14上，防止其发生偏移。\n\n[0055]参照图5和图7，所述发光器件15在所述衬底基板11所在平面的正投影区域覆盖所述支撑柱144在所述衬底基板11所在平面11的正投影区域，以此保证支撑柱144对于发光器件144的制程以及粘附固定的效果，同时防止支撑柱144位于发光器件外侧而影响后续导电材料17的喷涂打印。\n\n[0056]本揭示实施例的有益效果：本揭示实施例通过在像素定义层上设置阵列排布的多个暴露出部分导电电极的凹槽，利用像素定义层的材料在未固化状态下的粘性将发光器件粘附于相邻两个凹槽之间的像素定义层上，以对发光器件进行绑定前的初步固定，再通过填充至发光器件与相邻两个凹槽之间各形成的微腔结构内的导电材料将发光器件与导电电极绑定连接，以此防止发光器件绑定不良情况的发生，并降低修复成本。\n\n[0057]本揭示实施例还提供一种显示终端，如图8所示，图8为本揭示实施例提供的显示终端的结构示意图，所述显示终端包括显示面板1和终端主体2，所述显示面板1设置于所述终端主体2上，所述终端主体2与显示面板1可结合为一体，所述显示面板1为上述实施例所提供的显示面板。本揭示实施例所提供的显示终端3同样能够实现与上述实施例所提供的显示面板相同的技术效果，此处不再赘述。\n\n[0058]本揭示实施例还提供一种显示面板的制作方法，下面结合图9至图10H进行详细说明。其中，图9为本揭示实施例提供的显示面板的制作方法的流程示意图，图10A～10H为本揭示实施例提供的制作方法对应的显示面板的结构示意图，所述显示面板的制作方法包括：\n\n[0059]步骤S1：提供衬底基板11，在所述衬底基板11上形成层叠设置的薄膜晶体管阵列层12和导电电极层13，所述导电电极层13包括图案化的多个导电电极131。\n\n[0060]具体地，所述步骤S1包括：\n\n[0061]步骤S101：如图10A所示，提供衬底基板11，在所述衬底基板11上沉积一层金属氧化物材料，图案化所述金属氧化物材料，形成有源层1221；\n\n[0062]步骤S102：如图10B所示，在所述衬底基板11上沉积绝缘材料，图案化所述绝缘材料形成位于有源层1221上的栅极绝缘层1222，再在所述衬底基板11上沉积金属材料，图案化所述金属材料，形成位于所述栅极绝缘层1222上的栅极线层1223；\n\n[0063]步骤S103：如图10C所示，在所述衬底基板11上沉积绝缘材料，图案化所述绝缘材料，以形成绝缘层121以及位于绝缘层121上的多个过孔，在所述绝缘层121上沉积金属材料，图案化所述金属材料，形成源极、漏极以及多条信号走线；\n\n[0064]步骤S104：如图10D所示，在绝缘层121上沉积钝化层材料，图案化所述钝化层材料，形成钝化保护层123以及位于钝化保护层123上的多个过孔，再在所述钝化保护层123上沉积金属材料，图案化所述金属材料，形成导电电极层13，导电电极层13包括图案化的多个导电电极131。\n\n[0065]进一步的，所述步骤S101中，金属氧化物材料为氧化铟锌(indium zinc oxide,IZO)。在其他一些实施例中，所述金属氧化物材料也可以为氧化铟镓(indium galliumoxide,IGO)、氧化铟镓锡(indium gallium tin oxide,IGTO)或者氧化铟镓锌锡(indiumgallium zinc tin oxide,IGZTO)。\n\n[0066]所述步骤S102中，栅极绝缘层1222的绝缘材料为SiOx，栅极线层1223为金属Cu/Mo的叠层结构。在一些实施例中，所述栅极绝缘层1222的绝缘材料也可以为SiNx、AlOx等绝缘材料，在其他一些实施例中栅极绝缘层1222还可以为SiNx/SiOx材料的叠层结构，所述栅极线层1223还可以为金属Cu/MoTi的叠层结构、金属Cu/Ti的叠层，金属Al/Mo的叠层或者为CuNb合金。\n\n[0067]所述步骤S103中，绝缘层121与栅极绝缘层1222的材料相同，均为SiOx，所述源极和漏极以及信号走线均为金属Cu/Mo的叠层结构。在一些实施例中，所述绝缘层121还可以为SiOx/SiNx材料的叠层结构，源极和漏极以及信号走线还可以为金属Cu/MoTi的叠层结构、金属Cu/Ti的叠层，金属Al/Mo的叠层或者为CuNb合金。\n\n[0068]所述步骤S104中，钝化保护层123的材料与栅极绝缘层1222的材料相同，均为SiOx，所述导电电极层13为为金属Cu/Mo的叠层结构。在一些实施例中，所述钝化保护层123还可以为SiNx材料或者为SiOx/SiNx材料的叠层结构，所述导电电极层13还可以为金属Cu/MoTi的叠层结构、金属Cu/Ti的叠层，金属Al/Mo的叠层或者为CuNb合金。上述步骤中各膜层的材料在实际生产用可以根据需求进行选择，且不仅限于本揭示实施例所提供的材料，此处不做限制。\n\n[0069]在本揭示实施例中，所述显示面板的制作方法还包括：\n\n[0070]步骤S2：如图10E所示，在所述薄膜晶体管阵列层12上涂布有机光阻材料，刻蚀所述有机光阻材料形成像素定义层14以及间隔排布的多个暴露出部分所述导电电极131的凹槽143；\n\n[0071]步骤S3：如图10F所示，在所述像素定义层14未完全固化之前，将多个发光器件15转移至相邻两个所述凹槽143之间的像素定义层14上，所述发光器件151与相邻两个所述凹槽143之间各形成一微腔结构16；\n\n[0072]步骤S4：如图10G所示，在所述凹槽143内填充导电材料17，并对所述导电材料17进行预固化，以使所述发光器件15通过所述导电材料17与所述导电电极131绑定连接；\n\n[0073]步骤S5：对转移至所述像素定义层14上的所述发光器件15进行点灯测试，并对异常点进行修复，修复完成后对所述像素定义层14和所述导电材料17再次进行固化；以及\n\n[0074]步骤S6：如图10H所示，在所述像素定义层14上形成覆盖所述发光器件15的封装层18。\n\n[0075]具体地，步骤S3中，像素定义层14的材料为有机光阻，在未完全固化之前具有一定的粘附性，将转移至衬底基板11上的发光器件15设置于相邻两个所述凹槽143之间的像素定义层14上，可以对发光器件15进行绑定前的初步固定，以防止发光器件15发生偏移而导致绑定不良。\n\n[0076]步骤S3中，发光器件15凹槽143之间所形成的微腔结构16则有利于步骤S4中填充至凹槽143的导电材料17产生液体毛细现象，从而便于导电材料17渗透至凹槽143内部以及发光器件15与导电电极131之间，使得发光器件15的第一引脚151和第二引脚152分别通过所述导电材料17与导电电极131绑定连接，以此提高发光器件15与导电电极131绑定连接的稳定性，从而防止发光器件15绑定不良情况的发生。\n\n[0077]步骤S3中，所述发光器件15为Micro LED芯片，即所述显示面板1为Micro LED显示面板。当然，在一些实施例中，所述发光器件15也可以为Mini LED芯片等发光器件，此处不做限制。\n\n[0078]具体地，步骤S4中向所述凹槽143内填充导电材料17的方法为喷墨打印，利用喷墨打印的方法，可以精确的将导电材料17打印至凹槽143内，从而防止导电材料外溢以及绑定不良的情况发生。此外，步骤S4中所述导电材料17为液态的纳米导电银浆，其固化温度较低、黏结强度极高且电性能稳定，可以有效提高发光器件15与导电电极131绑定连接的稳定性。当然，在一些实施例中，所述导电材料17还可以为其他液态导电材料，此处不做限制。\n\n[0079]步骤S4中，在进行步骤S5的点灯测试之前仅对导电材料17进行预固化，以使发光器件15通过导电材料17与导电电极131之间电性连接，同时预固化的导电材料17以及未完全固化的像素定义层14的黏结强度要低于完全固化后的黏结强度，以此便于步骤S5中，对于异常点内发光器件15的拔除以及修复，从而降低发光器件的修复难度以及修复的成本。\n\n[0080]具体地，步骤S4和S5中预固化以及第二次固化的方法为紫外线照射，同样也可以通过加热进行固化，此处不做限制。\n\n[0081]步骤S5中，在完成点灯测试以及异常点的修复，直至无异常点后，再次对像素定义层14和所述导电材料17进行固化，以此使得像素定义层14和导电材料17完全固化，完成发光器件17与导电电极131之间的绑定连接，并增大其与发光器件17之间的黏结强度，以防止绑定不良的情况发生。\n\n[0082]步骤S6中，封装层18则主要用于保护发光器件15以及显示面板1内各元器件，以防止水汽、氧气等侵入显示面板内部造成破坏，同时还可以防止显示面板1内各元器件免受外界的机械破坏，并增强其稳定性。此外，所述封装层18与现有技术中显示面板的封装层的结构相同，此处不再赘述。\n\n[0083]本揭示实施例的有益效果：本揭示实施例提供的显示面板的制作方法通过刻蚀有机光阻材料以形成像素定义层以及间隔排布的多个暴露出部分所述像素电极的凹槽，使所述发光器件与相邻两个所述凹槽之间的所述像素定义层粘结，以对其进行初步固定，发光器件与相邻两个凹槽之间各形成一微腔结构有利于导电材料渗透至凹槽内部以及发光器件与导电电极之间，在进行点灯测试之前仅对导电材料进行预固化，便于对异常点内发光器件的拔除以及修复，从而降低发光器件的修复难度以及修复的成本，并且防止发光器件绑定不良情况的发生。\n\n[0084]综上所述，虽然本揭示以优选实施例揭露如上，但上述优选实施例并非用以限制本揭示，本领域的普通技术人员，在不脱离本揭示的精神和范围内，均可作各种更动与润饰，因此本揭示的保护范围以权利要求界定的范围为基准。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示面板及其制作方法、显示终端。\n\n背景技术\n\n[0002]在微发光二极管(micro light emitting diode,Micro LED)显示面板的制作过程中，需要将微小的Micro LED芯片从原始衬底转移到接受基板上排列成阵列，其中涉及巨量且微小的Micro LED芯片精确转移、绑定等工艺。\n\n[0003]目前已知的Micro LED芯片与接收基板上导电电极绑定连接方案中，大多数方法为将Micro LED芯片转移到接受基板并与接收基板上预图案化的绑定材料进行粘合绑定，绑定材料较多采用AuSn、InSn等类似的低熔点金属，绑定的过程涉及绑定材料固相-液相-固相转化，较为复杂，容易造成Micro LED芯片绑定不良，并导致修复成本增加的问题。\n\n[0004]综上所述，现有微发光二极管显示面板在将Micro LED芯片转移至接收基板的过程中存在绑定不良并导致修复成本增加的问题。故，有必要提供一种显示面板及其制作方法、显示终端来改善这一缺陷。\n\n发明内容\n\n[0005]本揭示实施例提供一种显示面板及其制作方法、显示终端，用于解决微发光二极管显示面板在转移绑定Micro LED芯片过程中存在绑定不良并导致修复成本增加的问题。\n\n[0006]本揭示实施例提供一种显示面板，包括：\n\n[0007]衬底基板；\n\n[0008]薄膜晶体管阵列层，设置于所述衬底基板上，包括阵列排布的多个薄膜晶体管以及多条信号走线；\n\n[0009]导电电极层，设置于所述薄膜晶体管阵列层远离所述衬底基板的一侧上，包括图案化的多个导电电极，所述导电电极分别连接所述薄膜晶体管和所述信号走线；\n\n[0010]像素定义层，设置于所述薄膜晶体管阵列层远离所述衬底基板的一侧上并覆盖所述导电电极层，所述像素定义层上设有阵列排布的多个凹槽，所述凹槽暴露出部分所述导电电极；以及\n\n[0011]多个发光器件，所述发光器件粘附于相邻两个所述凹槽之间的所述像素定义层上，所述发光器件与相邻两个所述凹槽之间各形成一微腔结构，所述发光器件通过填充至所述微腔结构内的导电材料与所述导电电极电性连接。\n\n[0012]根据本揭示一实施例，所述发光器件在所述衬底基板所在平面的正投影区域的两侧均位于相邻两个所述凹槽在所述衬底基板所在平面的正投影区域内。\n\n[0013]根据本揭示一实施例，所述像素定义层中粘附有所述发光器件的部分的高度小于未粘附有所述发光器件的部分的高度。\n\n[0014]根据本揭示一实施例，所述凹槽在所述像素定义层所在平面的开口形状包括矩形、圆形或者回形。\n\n[0015]根据本揭示一实施例，所述凹槽在所述像素定义层所在平面的开口形状为回形，所述凹槽中设有支撑柱，所述发光器件靠近所述衬底基板的一侧粘附于所述支撑柱上。\n\n[0016]根据本揭示一实施例，所述支撑柱的高度与粘附有所述发光器件的所述像素定义层的高度相同，且所述发光器件在所述衬底基板所在平面的正投影区域覆盖所述支撑柱在所述衬底基板所在平面的正投影区域。\n\n[0017]根据本揭示一实施例，所述发光器件为mini LED芯片或者为micro LED芯片。\n\n[0018]本揭示实施例提供一种显示终端，包括终端主体和如上述的显示面板，所述显示面板设置于所述终端主体上。\n\n[0019]本揭示实施例还提供一种显示面板的制作方法，包括：\n\n[0020]提供衬底基板，在所述衬底基板上形成层叠设置的薄膜晶体管阵列层和导电电极层，所述导电电极层包括图案化的多个导电电极；\n\n[0021]在所述薄膜晶体管阵列层上涂布有机光阻材料，刻蚀所述有机光阻材料形成像素定义层以及间隔排布的多个暴露出部分所述像素电极的凹槽；\n\n[0022]在所述像素定义层未固化之前，将多个发光器件转移至所述有机光阻材料上，使所述发光器件与相邻两个所述凹槽之间的所述像素定义层粘结，所述发光器件与相邻两个所述凹槽之间各形成一微腔结构；\n\n[0023]在所述凹槽内填充导电材料，并对所述导电材料进行预固化，以使所述发光器件通过所述导电材料与所述导电电极电性连接；\n\n[0024]对转移至所述衬底基板上的所述发光器件进行检测并修复，检测以及修复完成后对所述像素定义层和所述导电材料再次进行固化；以及\n\n[0025]在所述像素定义层上形成覆盖所述发光器件的封装层。\n\n[0026]根据本揭示一实施例，所述导电材料包括纳米导电银浆。\n\n[0027]本揭示实施例的有益效果：本揭示实施例通过在像素定义层上设置阵列排布的多个暴露出部分导电电极的凹槽，利用像素定义层的材料在未固化状态下的粘性将发光器件粘附于相邻两个凹槽之间的像素定义层上，以对发光器件进行绑定前的初步固定，再通过填充至发光器件与相邻两个凹槽之间各形成的微腔结构内的导电材料将发光器件与导电电极绑定连接，以此防止发光器件绑定不良情况的发生，并降低修复成本。\n\n附图说明\n\n[0028]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是揭示的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0029]图1为本揭示实施例提供的显示面板的平面示意图；\n\n[0030]图2为图1中显示面板沿A-A方向的截面结构示意图；\n\n[0031]图3为绑定发光器件前像素定义层所在平面的示意图；\n\n[0032]图4为绑定发光器件后像素定义层所在平面的示意图；\n\n[0033]图5为本揭示实施例提供的另一种显示面板沿图1中A-A方向的截面结构示意图；\n\n[0034]图6为图5中绑定发光器件前像素定义层所在平面的示意图；\n\n[0035]图7为图5中绑定发光器件后像素定义层所在平面的示意图；\n\n[0036]图8为本揭示实施例提供的显示终端的结构示意图；\n\n[0037]图9为本揭示实施例提供的显示面板的制作方法的流程示意图；\n\n[0038]图10A～10H为本揭示实施例提供的制作方法对应的显示面板的结构示意图。\n\n具体实施方式\n\n[0039]以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。\n\n[0040]下面结合附图和具体实施例对本揭示做进一步的说明。\n\n[0041]本揭示实施例提供一种显示面板，下面结合图1至图4进行详细说明，其中图1为本揭示实施例提供的显示面板的平面示意图，图2为图1中显示面板沿A-A方向的截面结构示意图，图3为像素定义层所在平面的示意图，图4为绑定发光器件后像素定义层所在平面的示意图。\n\n[0042]所述显示面板1包括衬底基板11、设置于所述衬底基板11上的薄膜晶体管阵列层12、设置于所述薄膜晶体管阵列层12远离衬底基板11一侧上的导电电极层13、设置于所述薄膜晶体管阵列层12上并覆盖所述导电电极层13的像素定义层14、阵列排布于所述像素定义层14上的多个发光器件15以及设置于所述像素定义层14上并覆盖多个所述发光器件15的封装层15。\n\n[0043]在本揭示实施例中所述发光器件15为Micro LED芯片，即所述显示面板1为MicroLED显示面板。当然，在一些实施例中，所述发光器件15也可以为Mini LED芯片等发光器件，此处不做限制。\n\n[0044]如图2所示，所述薄膜晶体管阵列层12包括绝缘层121、阵列排布的多个薄膜晶体管122以及设置于绝缘层121上的钝化保护层123，薄膜晶体管122包括层叠设置的有源层1221、栅极绝缘层1222、栅极线层1223以及设置于绝缘层121上的源极和漏极1224，所述薄膜晶体管阵列层122中还包括多条信号走线124，多条所述信号走线124分别与栅极线层1223或者漏极1224同层设置。导电电极层13包括图案化的多个导电电极131，所述导电电极131分别连接薄膜晶体管122的漏极1224以及信号走线124。\n\n[0045]在本揭示实施例中，像素定义层14上设有阵列排布的多个凹槽143，所述凹槽143贯穿所述像素定义层14并暴露出位于像素定义层14底部的部分导电电极131。多个所述凹槽143中每相邻两个凹槽143形成一凹槽组对应于一个发光器件143，多个所述凹槽组按照显示面板1的像素排列方式阵列排布。\n\n[0046]具体地，所述发光器件15粘附于所述凹槽组中相邻两个凹槽143之间的像素定义层143上，设定像素定义层143中粘附有发光器件15的部分为第一部分141，未粘附有发光器件15的部分为第二部分142，在所述像素定义层14的材料呈未固化状态下，利用其粘性可以对发光器件15进行绑定前的初步固定，以防止发光器件15发生偏移而导致绑定不良。\n\n[0047]发光器件15与相邻两个凹槽143之间各自形成一微腔结构16，在向凹槽143内填充导电材料17时，微腔结构16有利于导电材料17产生液体毛细现象，从而便于导电材料17渗透至凹槽143内部以及发光器件15与导电电极131之间，使得发光器件15的第一引脚151和第二引脚152分别通过所述导电材料17与导电电极131绑定连接，以此提高发光器件15与导电电极131绑定连接的稳定性，从而防止发光器件15绑定不良情况的发生。\n\n[0048]在本揭示实施例中，所述导电材料17为液态的纳米导电银浆，其固化温度较低、黏结强度极高且电性能稳定，可以有效提高发光器件15与导电电极131绑定连接的稳定性。当然，在一些实施例中，所述导电材料17还可以为其他液态导电材料，此处不做限制。\n\n[0049]进一步的，如图2和图4所示，发光器件15在衬底基板11所在平面的正投影区域的两侧均位于相邻两个凹槽143在衬底基板11所在平面的正投影区域内，以此保证凹槽143两侧的开口未被发光器件15遮挡，在将发光器件15粘附于像素定义层14的第一部分141上后，在凹槽143开口侧通过喷墨打印或者其他方式填充导电材料17时也不会受发光器件15的影响。\n\n[0050]进一步的，参考图2，所述像素定义层14中粘附有发光器件15的第一部分141的高度要小于未粘附有所述发光器件15的第二部分142的高度，以此使得发光器件15的第一引脚151和第二引脚152均位于凹槽143的开口内部，仅需在凹槽143内填充导电材料17即可使得发光器件15与导电电极131绑定连接，从而可以防止导电材料17溢出至凹槽143的外侧，在保证绑定连接的稳定性的同时，不影响显示面板的显示效果。\n\n[0051]进一步的，参考图2和图3，所述凹槽143在所述像素定义层14所在平面的开口形状为矩形，所述凹槽143沿垂直于所述像素定义层14所在平面方向的截面形状为倒置梯形。当然，在一些实施例中，所述凹槽143在所述像素定义层14所在平面的开口形状也可以圆形、椭圆形或者其他多边形结构，其沿垂直于像素定义层14所在平面方向的截面形状还可以为梯形、矩形等多边形结构，均可以实现与上述形状相同的技术效果，具体形状可以根据实际需求以及制作工艺进行设置，此处不做限制。\n\n[0052]本揭示实施例还提供另一种显示面板，如图5至图7所示，其中图5为本揭示实施例提供的另一种显示面板沿图1中A-A方向的截面结构示意图，图6为本揭示实施例中像素定义层所在平面的示意图，图7为本揭示实施例中绑定发光器件后像素定义层所在平面的示意图。\n\n[0053]参照图5至图7，本揭示实施例所提供的显示面板的结构与上述显示面板的结构大致相同，区别之处在于，本揭示实施例所提供的显示面板中凹槽143在所述像素定义层14所在平面的开口形状为回形，与所述发光器件15相对的两个回形的凹槽143中各设有一支撑柱144，所述支撑柱144由像素定义层14刻蚀形成凹槽143的制程中形成，所述发光器件15靠近所述衬底基板11的一侧粘附于所述支撑柱144上，所述支撑柱144与第一部分141的作用相同，用于支撑并粘附固定所述发光器件15。当然，单个所述凹槽143中支撑柱144的数量也不仅限于本揭示实施例中的1个，在一些实施例中，可以根据实际需求设置间隔排列的两个或者两个以上的支撑柱144用于支撑发光器件，此处不做限制。\n\n[0054]具体地，所述支撑柱144的高度与像素定义层14中第一部分141的高度相同，均低于未粘附有发光器件15的第二部分142的高度，以此保证发光器件15能够平整的粘附于像素定义层14上，防止其发生偏移。\n\n[0055]参照图5和图7，所述发光器件15在所述衬底基板11所在平面的正投影区域覆盖所述支撑柱144在所述衬底基板11所在平面11的正投影区域，以此保证支撑柱144对于发光器件144的制程以及粘附固定的效果，同时防止支撑柱144位于发光器件外侧而影响后续导电材料17的喷涂打印。\n\n[0056]本揭示实施例的有益效果：本揭示实施例通过在像素定义层上设置阵列排布的多个暴露出部分导电电极的凹槽，利用像素定义层的材料在未固化状态下的粘性将发光器件粘附于相邻两个凹槽之间的像素定义层上，以对发光器件进行绑定前的初步固定，再通过填充至发光器件与相邻两个凹槽之间各形成的微腔结构内的导电材料将发光器件与导电电极绑定连接，以此防止发光器件绑定不良情况的发生，并降低修复成本。\n\n[0057]本揭示实施例还提供一种显示终端，如图8所示，图8为本揭示实施例提供的显示终端的结构示意图，所述显示终端包括显示面板1和终端主体2，所述显示面板1设置于所述终端主体2上，所述终端主体2与显示面板1可结合为一体，所述显示面板1为上述实施例所提供的显示面板。本揭示实施例所提供的显示终端3同样能够实现与上述实施例所提供的显示面板相同的技术效果，此处不再赘述。\n\n[0058]本揭示实施例还提供一种显示面板的制作方法，下面结合图9至图10H进行详细说明。其中，图9为本揭示实施例提供的显示面板的制作方法的流程示意图，图10A～10H为本揭示实施例提供的制作方法对应的显示面板的结构示意图，所述显示面板的制作方法包括：\n\n[0059]步骤S1：提供衬底基板11，在所述衬底基板11上形成层叠设置的薄膜晶体管阵列层12和导电电极层13，所述导电电极层13包括图案化的多个导电电极131。\n\n[0060]具体地，所述步骤S1包括：\n\n[0061]步骤S101：如图10A所示，提供衬底基板11，在所述衬底基板11上沉积一层金属氧化物材料，图案化所述金属氧化物材料，形成有源层1221；\n\n[0062]步骤S102：如图10B所示，在所述衬底基板11上沉积绝缘材料，图案化所述绝缘材料形成位于有源层1221上的栅极绝缘层1222，再在所述衬底基板11上沉积金属材料，图案化所述金属材料，形成位于所述栅极绝缘层1222上的栅极线层1223；\n\n[0063]步骤S103：如图10C所示，在所述衬底基板11上沉积绝缘材料，图案化所述绝缘材料，以形成绝缘层121以及位于绝缘层121上的多个过孔，在所述绝缘层121上沉积金属材料，图案化所述金属材料，形成源极、漏极以及多条信号走线；\n\n[0064]步骤S104：如图10D所示，在绝缘层121上沉积钝化层材料，图案化所述钝化层材料，形成钝化保护层123以及位于钝化保护层123上的多个过孔，再在所述钝化保护层123上沉积金属材料，图案化所述金属材料，形成导电电极层13，导电电极层13包括图案化的多个导电电极131。\n\n[0065]进一步的，所述步骤S101中，金属氧化物材料为氧化铟锌(indium zinc oxide,IZO)。在其他一些实施例中，所述金属氧化物材料也可以为氧化铟镓(indium galliumoxide,IGO)、氧化铟镓锡(indium gallium tin oxide,IGTO)或者氧化铟镓锌锡(indiumgallium zinc tin oxide,IGZTO)。\n\n[0066]所述步骤S102中，栅极绝缘层1222的绝缘材料为SiOx，栅极线层1223为金属Cu/Mo的叠层结构。在一些实施例中，所述栅极绝缘层1222的绝缘材料也可以为SiNx、AlOx等绝缘材料，在其他一些实施例中栅极绝缘层1222还可以为SiNx/SiOx材料的叠层结构，所述栅极线层1223还可以为金属Cu/MoTi的叠层结构、金属Cu/Ti的叠层，金属Al/Mo的叠层或者为CuNb合金。\n\n[0067]所述步骤S103中，绝缘层121与栅极绝缘层1222的材料相同，均为SiOx，所述源极和漏极以及信号走线均为金属Cu/Mo的叠层结构。在一些实施例中，所述绝缘层121还可以为SiOx/SiNx材料的叠层结构，源极和漏极以及信号走线还可以为金属Cu/MoTi的叠层结构、金属Cu/Ti的叠层，金属Al/Mo的叠层或者为CuNb合金。\n\n[0068]所述步骤S104中，钝化保护层123的材料与栅极绝缘层1222的材料相同，均为SiOx，所述导电电极层13为为金属Cu/Mo的叠层结构。在一些实施例中，所述钝化保护层123还可以为SiNx材料或者为SiOx/SiNx材料的叠层结构，所述导电电极层13还可以为金属Cu/MoTi的叠层结构、金属Cu/Ti的叠层，金属Al/Mo的叠层或者为CuNb合金。上述步骤中各膜层的材料在实际生产用可以根据需求进行选择，且不仅限于本揭示实施例所提供的材料，此处不做限制。\n\n[0069]在本揭示实施例中，所述显示面板的制作方法还包括：\n\n[0070]步骤S2：如图10E所示，在所述薄膜晶体管阵列层12上涂布有机光阻材料，刻蚀所述有机光阻材料形成像素定义层14以及间隔排布的多个暴露出部分所述导电电极131的凹槽143；\n\n[0071]步骤S3：如图10F所示，在所述像素定义层14未完全固化之前，将多个发光器件15转移至相邻两个所述凹槽143之间的像素定义层14上，所述发光器件151与相邻两个所述凹槽143之间各形成一微腔结构16；\n\n[0072]步骤S4：如图10G所示，在所述凹槽143内填充导电材料17，并对所述导电材料17进行预固化，以使所述发光器件15通过所述导电材料17与所述导电电极131绑定连接；\n\n[0073]步骤S5：对转移至所述像素定义层14上的所述发光器件15进行点灯测试，并对异常点进行修复，修复完成后对所述像素定义层14和所述导电材料17再次进行固化；以及\n\n[0074]步骤S6：如图10H所示，在所述像素定义层14上形成覆盖所述发光器件15的封装层18。\n\n[0075]具体地，步骤S3中，像素定义层14的材料为有机光阻，在未完全固化之前具有一定的粘附性，将转移至衬底基板11上的发光器件15设置于相邻两个所述凹槽143之间的像素定义层14上，可以对发光器件15进行绑定前的初步固定，以防止发光器件15发生偏移而导致绑定不良。\n\n[0076]步骤S3中，发光器件15凹槽143之间所形成的微腔结构16则有利于步骤S4中填充至凹槽143的导电材料17产生液体毛细现象，从而便于导电材料17渗透至凹槽143内部以及发光器件15与导电电极131之间，使得发光器件15的第一引脚151和第二引脚152分别通过所述导电材料17与导电电极131绑定连接，以此提高发光器件15与导电电极131绑定连接的稳定性，从而防止发光器件15绑定不良情况的发生。\n\n[0077]步骤S3中，所述发光器件15为Micro LED芯片，即所述显示面板1为Micro LED显示面板。当然，在一些实施例中，所述发光器件15也可以为Mini LED芯片等发光器件，此处不做限制。\n\n[0078]具体地，步骤S4中向所述凹槽143内填充导电材料17的方法为喷墨打印，利用喷墨打印的方法，可以精确的将导电材料17打印至凹槽143内，从而防止导电材料外溢以及绑定不良的情况发生。此外，步骤S4中所述导电材料17为液态的纳米导电银浆，其固化温度较低、黏结强度极高且电性能稳定，可以有效提高发光器件15与导电电极131绑定连接的稳定性。当然，在一些实施例中，所述导电材料17还可以为其他液态导电材料，此处不做限制。\n\n[0079]步骤S4中，在进行步骤S5的点灯测试之前仅对导电材料17进行预固化，以使发光器件15通过导电材料17与导电电极131之间电性连接，同时预固化的导电材料17以及未完全固化的像素定义层14的黏结强度要低于完全固化后的黏结强度，以此便于步骤S5中，对于异常点内发光器件15的拔除以及修复，从而降低发光器件的修复难度以及修复的成本。\n\n[0080]具体地，步骤S4和S5中预固化以及第二次固化的方法为紫外线照射，同样也可以通过加热进行固化，此处不做限制。\n\n[0081]步骤S5中，在完成点灯测试以及异常点的修复，直至无异常点后，再次对像素定义层14和所述导电材料17进行固化，以此使得像素定义层14和导电材料17完全固化，完成发光器件17与导电电极131之间的绑定连接，并增大其与发光器件17之间的黏结强度，以防止绑定不良的情况发生。\n\n[0082]步骤S6中，封装层18则主要用于保护发光器件15以及显示面板1内各元器件，以防止水汽、氧气等侵入显示面板内部造成破坏，同时还可以防止显示面板1内各元器件免受外界的机械破坏，并增强其稳定性。此外，所述封装层18与现有技术中显示面板的封装层的结构相同，此处不再赘述。\n\n[0083]本揭示实施例的有益效果：本揭示实施例提供的显示面板的制作方法通过刻蚀有机光阻材料以形成像素定义层以及间隔排布的多个暴露出部分所述像素电极的凹槽，使所述发光器件与相邻两个所述凹槽之间的所述像素定义层粘结，以对其进行初步固定，发光器件与相邻两个凹槽之间各形成一微腔结构有利于导电材料渗透至凹槽内部以及发光器件与导电电极之间，在进行点灯测试之前仅对导电材料进行预固化，便于对异常点内发光器件的拔除以及修复，从而降低发光器件的修复难度以及修复的成本，并且防止发光器件绑定不良情况的发生。\n\n[0084]综上所述，虽然本揭示以优选实施例揭露如上，但上述优选实施例并非用以限制本揭示，本领域的普通技术人员，在不脱离本揭示的精神和范围内，均可作各种更动与润饰，因此本揭示的保护范围以权利要求界定的范围为基准。');
INSERT INTO `os_patent_instruction_text` VALUES (10803, 23857, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种阵列基板及其制造方法、显示装置。\n\n背景技术\n\n[0002]微型化发光二极管发展成未来显示技术的热点之一，和目前的液晶显示装置(Liquid Crystal Display，LCD)、有机发光二极管(Organic Light Emitting Diode，OLED)显示器件相比，微型化发光二极管具有反应快、高色域、高PPI、低能耗等优势，但其技术难点多且技术复杂，特别是其关键技术巨量转移技术、发光二极管颗粒微型化成为技术瓶颈，而亚毫米发光二极管(Mini-LED)背板作为微型化发光二极管与背板结合的产物，具有高对比度、高显色性能等可与有机发光二极管相媲美的特点，成本仅为有机发光二极管的60％左右，相对有机发光二极管更易实施，所以亚毫米发光二极管成为各大面板厂商布局热点。\n\n[0003]亚毫米发光二极管背板需要通过清洗、沉积、涂胶、曝光、显影、蚀刻、剥离以及检测切割等制程等完成，在进行亚毫米发光二极管背板制作完成后的切割、亚毫米发光二极管转移、覆晶薄膜绑定等过程会出现亚毫米发光二极管背板划伤等情况，导致亚毫米发光二极管背板出现短路以及断路的显示不良，严重影响产品整体良率。\n\n[0004]因此，有必要解决亚毫米发光二极管背板在切割、亚毫米发光二极管转移、覆晶薄膜绑定等过程中易被划伤的问题。\n\n发明内容\n\n[0005]本申请的目的在于提供一种阵列基板及其制造方法、显示装置，以解决阵列基板在切割、发光元件转移以及覆晶薄膜绑定过程中易被划伤的问题。\n\n[0006]为实现上述目的，本申请提供一种阵列基板，所述阵列基板包括：\n\n[0007]基板；\n\n[0008]阵列层，所述阵列层包括设置于所述基板上的导电垫以及导电电极，所述导电垫用于与待绑定于所述阵列基板上的驱动芯片电性连接，所述导电电极用于与待绑定于所述阵列基板上的发光元件连接；\n\n[0009]防划伤层，所述防划伤层设置于所述阵列层远离所述基板的一侧，所述防划伤层具有第一镂空区和第二镂空区，所述第一镂空区对应所述导电垫，所述第二镂空区对应所述导电电极。\n\n[0010]在上述阵列基板中，所述防划伤层的制备材料为石墨烯或改性石墨烯中的至少一种。\n\n[0011]在上述阵列基板中，所述阵列层还包括薄膜晶体管，所述防划伤层对应所述薄膜晶体管设置。\n\n[0012]在上述阵列基板中，所述防划伤层的杨氏模量大于或等于0.1TPa。\n\n[0013]在上述阵列基板中，所述防划伤层的厚度为50埃-2000埃。\n\n[0014]在上述阵列基板中，所述导电垫和所述导电电极同层设置。\n\n[0015]在上述阵列基板中，所述导电垫和所述导电电极均包括第一导电子层和所述第二导电子层，所述第二导电子层位于所述第一导电子层远离所述基板的一侧，所述第二导电子层用于防止所述第一导电子层氧化。\n\n[0016]在上述阵列基板中，所述发光元件为亚毫米发光二极管或微型发光二极管。\n\n[0017]一种阵列基板的制造方法，所述制造方法包括如下步骤：\n\n[0018]于基板上形成阵列层，所述阵列层包括设置于所述基板上的导电垫以及导电电极；\n\n[0019]于所述阵列层远离所述基板的一侧形成防划伤层；\n\n[0020]去除所述防划伤层对应所述导电垫以及所述导电电极的部分，且使所述导电垫以及所述导电电极显露；\n\n[0021]将覆晶薄膜绑定于所述导电垫上，且将发光元件绑定于所述导电电极上，所述覆晶薄膜包括驱动芯片，得所述阵列基板。\n\n[0022]一种显示装置，所述显示装置包括上述阵列基板。\n\n[0023]有益效果：本申请提供一种阵列基板及其制造方法、显示装置，所述阵列基板包括：基板；阵列层，阵列层包括设置于基板上的导电垫以及导电电极，导电垫用于与待绑定于阵列基板上的驱动芯片电性连接，导电电极用于与待绑定于阵列基板上的发光元件连接；防划伤层，防划伤层设置于阵列层远离基板的一侧，防划伤层具有第一镂空区和第二镂空区，第一镂空区对应导电垫，第二镂空区对应导电电极。通过在阵列层远离基板的一侧设置防划伤层，以避免将驱动芯片以及发光元件绑定于阵列基板的过程中对阵列层上的线路造成划伤导致基板出现短路、断路的显示不良，严重影响产品的整体良率。\n\n附图说明\n\n[0024]图1为本申请实施例阵列基板的制造方法的流程示意图；\n\n[0025]图2A-2D为制造本申请实施例阵列基板的过程示意图。\n\n具体实施方式\n\n[0026]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0027]本申请提供一种阵列基板，所述阵列基板包括：\n\n[0028]基板；\n\n[0029]阵列层，所述阵列层包括设置于所述基板上的导电垫以及导电电极，所述导电垫用于与待绑定于所述阵列基板上的驱动芯片电性连接，所述导电电极用于与待绑定于所述阵列基板上的发光元件连接；\n\n[0030]防划伤层，所述防划伤层设置于所述阵列层远离所述基板的一侧，所述防划伤层具有第一镂空区和第二镂空区，所述第一镂空区对应所述导电垫，所述第二镂空区对应所述导电电极。\n\n[0031]本申请阵列基板通过在阵列层远离基板的一侧形成防划伤层，以在切割制程、发光元件绑定制程以及覆晶薄膜绑定制程中对阵列层上的线路起到保护作用，提高阵列基板的良率。\n\n[0032]在一些实施例中，所述防划伤层的制备材料为石墨烯或改性石墨烯中的至少一种。石墨烯具有厚度薄、坚硬的优点，且具有良好的韧性，可以弯曲。石墨烯的杨氏模量达到1.0TPa，拉伸强度为130GPa。改性石墨烯，例如氢等离子改性的还原石墨烯具有良好的强度，平均模量达到0.25TPa。由于石墨烯及石墨烯改性材料具有坚硬且具有韧性的优点，使得防划伤层在阵列基板的制造过程中被划伤或碰撞受损较小，起到包括阵列层的线路，防止线路短路或者断路的问题。\n\n[0033]在一些实施例中，防划伤层包括第一防划伤层和第二防划伤层，第一防划伤层的杨氏模量大于第二防划伤层的杨氏模量，第一防划伤层位于第二防划伤层远离基板的一侧，以使得防划伤层具有良好的防划伤作用的同时，便于后续防划伤层的图案化。例如第一防划伤层的制备材料为石墨烯，第二防划伤层的制备材料为还原石墨烯。第二防划伤层的制备材料为还原石墨烯，由于还原石墨烯相对于石墨烯具有更多的官能团，有利于提高防划伤层与阵列层之间的附着力。第一防划伤层的制备材料为石墨烯，由于石墨烯具有良好的稳定性，例如高温稳定性以及化学稳定性等，有利于提高防划伤层的稳定性。\n\n[0034]在一些实施例中，所述阵列层还包括薄膜晶体管，所述防划伤层对应所述薄膜晶体管设置。阵列基板还可以包括数据线以及扫描线等电路，以驱动发光元件发光。防划伤层对应薄膜晶体管设置，可以对薄膜晶体管中的膜层起到保护作用。\n\n[0035]在一些实施例中，薄膜晶体管可以为蚀刻阻挡型薄膜晶体管，也可以为背沟道薄膜晶体管。薄膜晶体管包括栅极、有源层、源漏电极以及栅极绝缘层，栅极绝缘层设置于栅极以及有源层之间，源漏电极与有源层电性连接。\n\n[0036]在一些实施例中，所述防划伤层的杨氏模量大于或等于0.1TPa，以使得防划伤层相对于普通的无机材料例如氮化硅等具有良好的防划伤效果。防划伤层的杨氏模量可以为0.15TPa、0.5TPa、0.75TPa、1TPa以及2TPa。\n\n[0037]在一些实施例中，所述防划伤层的厚度为50埃-2000埃，以使得防划伤层起到防划伤作用的同时，更容易制备得到且图案化防划伤层的时间缩短，简化制程。例如防划伤层的厚度为100埃、150埃、800埃、1000埃以及1500埃。\n\n[0038]在一些实施例中，所述导电垫和所述导电电极同层设置，以使得导电垫以及导电电极可以通过相同的制程形成，有利于简化制程。\n\n[0039]在一些实施例中，所述导电垫和所述导电电极均包括第一导电子层和所述第二导电子层，所述第二导电子层位于所述第一导电子层远离所述基板的一侧，所述第二导电子层用于防止所述第一导电子层氧化，以使得导电垫和导电电极具有良好的导电性的同时，避免导电垫以及导电电极出现氧化。\n\n[0040]在一些实施例中，第一导电子层的制备材料为铜或铜合金，第二导电子层的制备材料为MoTiNi合金、MoTi合金或MoNi合金。第二导电子层的制备材料为MoTiNi合金使得导电垫以及导电电极具有更好的抗氧化性。\n\n[0041]在一些实施例中，所述导电垫和所述导电电极均还包括第三导电子层，第三导电子层位于第一导电子层靠近基板的一侧，第三导电层的制备材料为Mo或Mo合金，以防止第一导电子层为铜层时出现扩散。\n\n[0042]在一些实施例中，所述发光元件为亚毫米发光二极管(Mini LED)或微型发光二极管(Micro LED)。\n\n[0043]本申请还提供一种显示装置。显示装置可以为液晶显示装置，液晶显示装置包括背光模组，背光模组包括上述阵列基板。显示装置也可以为无机发光二极管显示面板，无机发光二极管显示面板包括上述阵列基板。\n\n[0044]本申请还提供一种阵列基板的制造方法，阵列基板的制造方法的流程图如图1所示，制造方法包括如下步骤：\n\n[0045]S101:于基板上形成阵列层，所述阵列层包括设置于所述基板上的导电垫以及导电电极。\n\n[0046]S102:于所述阵列层远离所述基板的一侧形成防划伤层。\n\n[0047]S103:去除所述防划伤层对应所述导电垫以及所述导电电极的部分，且使所述导电垫以及所述导电电极显露。\n\n[0048]S104:将覆晶薄膜绑定于所述导电垫上，且将发光元件绑定于所述导电电极上，所述覆晶薄膜包括驱动芯片，得所述阵列基板。\n\n[0049]本申请阵列基板的制造方法通过在阵列层远离基板的一侧形成防划伤层，且去除防划伤层对应导电电极以及导电垫的部分，且使导电电极以及导电垫显露后，将发光元件绑定于导电电极上，将覆晶薄膜绑定于导电垫上，以避免在绑定发光元件以及覆晶薄膜的过程中对阵列层上的线路造成损伤，提高产品的良率。\n\n[0050]以下以薄膜晶体管为背沟道蚀刻型薄膜晶体管为例，对阵列基板的制造方法进行详述。\n\n[0051]S201：如图2A所示，在基板上形成栅极以及第一导电构件。\n\n[0052]具体地，在基板100上形成整面的第一导电层，采用第一道黄光制程对第一导电层进行图案化，以得到栅极1011以及第一导电构件1012。其中，第一道黄光制程包括于第一导电层上形成整面的光阻层，利用第一光罩对光阻层进行曝光，且利用显影液进行显影，蚀刻未被光阻层覆盖的第一导电层，剥离剩余的光阻层。其中，第一导电层包括依次叠置于基板100上的钼或钼合金层以及铜或铜合金层，例如第一导电层为依次叠置于基板100上的钼层以及铜层。\n\n[0053]S202:如图2B所示，依次形成覆盖栅极、第一导电构件以及基板的栅极绝缘层和半导体层，且在栅极绝缘层和半导体层上形成对应第一导电构件设置的第一接触孔。\n\n[0054]具体地，形成覆盖栅极1011、第一导电构件1012以及基板100的整面栅极绝缘层102后，在栅极绝缘层102上形成整面的半导体层。栅极绝缘层102的制备材料为氮化硅。半导体层包括a-Si层1031以及n掺杂的a-Si层1032，n掺杂的a-Si层1032位于远离基板100的一侧。再通过光阻涂布、曝光、显影、蚀刻以及剥离的第二道黄光制程以于第一导电构件1012的上方形成贯穿半导体层以及栅极绝缘层102的第一接触孔100a。\n\n[0055]S203:如图2C所示，于第一接触孔中以及半导体层上形成整面的第二导电层，利用构图工艺形成第二导电构件、有源层、源漏电极以及导电垫，第二导电构件通过第一接触孔与第一导电构件接触，源漏电极与有源层接触。\n\n[0056]具体地，于第一接触孔100a中以及半导体层上形成整面的第二导电层后，采用半色调灰阶掩膜(Half Tone)工艺以及两次干法蚀刻以及两次湿法蚀刻，以制备得到第二导电构件1041、有源层1033、源漏电极1042以及导电垫1043，第二导电构件1041通过第一接触孔100a与第一导电构件1012接触，源漏电极1042与有源层1033接触。第二导电层包括依次叠置于半导体层上的Mo层、铜层以及MoTiNi合金层。\n\n[0057]其中，半色调灰阶掩膜(Half Tone)工艺是在第二导电层上形成整面的光层之后，利用半色调灰阶掩膜半对光阻层定义光阻全保留区、光阻半保留区以及光阻完全去除区，其中，待形成第二导电构件1041、源漏电极1042以及导电垫1043的位置为光阻全保留区，待形成有源层1033的沟道的位置为光阻半保留区，待形成源漏电极1042中的源电极和待形成第二导电构件1041之间的区域以及待形成源漏电极1042的漏电极和待形成导电电极1043之间的区域为光阻完全去除区。第一次干法蚀刻是蚀刻光阻完全去除区的第二导电层，第一次湿法蚀刻是蚀刻光阻完全去除区的半导体层。第二次干法蚀刻是蚀刻光阻半保留区的第二导电层，第二次湿法蚀刻是蚀刻光阻半保留区的n掺杂的a-Si层1032。\n\n[0058]S204:如图2D所示，依次形成覆盖第二导电构件、源漏电极、导电垫以及栅极绝缘层的钝化层以及防划伤层，且去除第二导电构件以及导电垫对应的钝化层以及防划伤层。\n\n[0059]具体地，形成覆盖第二导电构件1041、源漏电极1042、导电垫1043以及栅极绝缘层102的整面钝化层105，于钝化层105上形成整面的防划伤层106，采用第三道黄光制程去除第二导电构件1041以及导电垫1043对应的钝化层105以及防划伤层106，以使第二导电构件1041以及导电垫1043显露。钝化层105的制备材料为氮化硅以及氧化硅中的至少一种。防划伤层106的制备材料为石墨烯或改性石墨烯。\n\n[0060]S205:将发光元件绑定于导电电极上，且将覆晶薄膜绑定于第二导电构件上。\n\n[0061]以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种阵列基板及其制造方法、显示装置。\n\n背景技术\n\n[0002]微型化发光二极管发展成未来显示技术的热点之一，和目前的液晶显示装置(Liquid Crystal Display，LCD)、有机发光二极管(Organic Light Emitting Diode，OLED)显示器件相比，微型化发光二极管具有反应快、高色域、高PPI、低能耗等优势，但其技术难点多且技术复杂，特别是其关键技术巨量转移技术、发光二极管颗粒微型化成为技术瓶颈，而亚毫米发光二极管(Mini-LED)背板作为微型化发光二极管与背板结合的产物，具有高对比度、高显色性能等可与有机发光二极管相媲美的特点，成本仅为有机发光二极管的60％左右，相对有机发光二极管更易实施，所以亚毫米发光二极管成为各大面板厂商布局热点。\n\n[0003]亚毫米发光二极管背板需要通过清洗、沉积、涂胶、曝光、显影、蚀刻、剥离以及检测切割等制程等完成，在进行亚毫米发光二极管背板制作完成后的切割、亚毫米发光二极管转移、覆晶薄膜绑定等过程会出现亚毫米发光二极管背板划伤等情况，导致亚毫米发光二极管背板出现短路以及断路的显示不良，严重影响产品整体良率。\n\n[0004]因此，有必要解决亚毫米发光二极管背板在切割、亚毫米发光二极管转移、覆晶薄膜绑定等过程中易被划伤的问题。\n\n发明内容\n\n[0005]本申请的目的在于提供一种阵列基板及其制造方法、显示装置，以解决阵列基板在切割、发光元件转移以及覆晶薄膜绑定过程中易被划伤的问题。\n\n[0006]为实现上述目的，本申请提供一种阵列基板，所述阵列基板包括：\n\n[0007]基板；\n\n[0008]阵列层，所述阵列层包括设置于所述基板上的导电垫以及导电电极，所述导电垫用于与待绑定于所述阵列基板上的驱动芯片电性连接，所述导电电极用于与待绑定于所述阵列基板上的发光元件连接；\n\n[0009]防划伤层，所述防划伤层设置于所述阵列层远离所述基板的一侧，所述防划伤层具有第一镂空区和第二镂空区，所述第一镂空区对应所述导电垫，所述第二镂空区对应所述导电电极。\n\n[0010]在上述阵列基板中，所述防划伤层的制备材料为石墨烯或改性石墨烯中的至少一种。\n\n[0011]在上述阵列基板中，所述阵列层还包括薄膜晶体管，所述防划伤层对应所述薄膜晶体管设置。\n\n[0012]在上述阵列基板中，所述防划伤层的杨氏模量大于或等于0.1TPa。\n\n[0013]在上述阵列基板中，所述防划伤层的厚度为50埃-2000埃。\n\n[0014]在上述阵列基板中，所述导电垫和所述导电电极同层设置。\n\n[0015]在上述阵列基板中，所述导电垫和所述导电电极均包括第一导电子层和所述第二导电子层，所述第二导电子层位于所述第一导电子层远离所述基板的一侧，所述第二导电子层用于防止所述第一导电子层氧化。\n\n[0016]在上述阵列基板中，所述发光元件为亚毫米发光二极管或微型发光二极管。\n\n[0017]一种阵列基板的制造方法，所述制造方法包括如下步骤：\n\n[0018]于基板上形成阵列层，所述阵列层包括设置于所述基板上的导电垫以及导电电极；\n\n[0019]于所述阵列层远离所述基板的一侧形成防划伤层；\n\n[0020]去除所述防划伤层对应所述导电垫以及所述导电电极的部分，且使所述导电垫以及所述导电电极显露；\n\n[0021]将覆晶薄膜绑定于所述导电垫上，且将发光元件绑定于所述导电电极上，所述覆晶薄膜包括驱动芯片，得所述阵列基板。\n\n[0022]一种显示装置，所述显示装置包括上述阵列基板。\n\n[0023]有益效果：本申请提供一种阵列基板及其制造方法、显示装置，所述阵列基板包括：基板；阵列层，阵列层包括设置于基板上的导电垫以及导电电极，导电垫用于与待绑定于阵列基板上的驱动芯片电性连接，导电电极用于与待绑定于阵列基板上的发光元件连接；防划伤层，防划伤层设置于阵列层远离基板的一侧，防划伤层具有第一镂空区和第二镂空区，第一镂空区对应导电垫，第二镂空区对应导电电极。通过在阵列层远离基板的一侧设置防划伤层，以避免将驱动芯片以及发光元件绑定于阵列基板的过程中对阵列层上的线路造成划伤导致基板出现短路、断路的显示不良，严重影响产品的整体良率。\n\n附图说明\n\n[0024]图1为本申请实施例阵列基板的制造方法的流程示意图；\n\n[0025]图2A-2D为制造本申请实施例阵列基板的过程示意图。\n\n具体实施方式\n\n[0026]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0027]本申请提供一种阵列基板，所述阵列基板包括：\n\n[0028]基板；\n\n[0029]阵列层，所述阵列层包括设置于所述基板上的导电垫以及导电电极，所述导电垫用于与待绑定于所述阵列基板上的驱动芯片电性连接，所述导电电极用于与待绑定于所述阵列基板上的发光元件连接；\n\n[0030]防划伤层，所述防划伤层设置于所述阵列层远离所述基板的一侧，所述防划伤层具有第一镂空区和第二镂空区，所述第一镂空区对应所述导电垫，所述第二镂空区对应所述导电电极。\n\n[0031]本申请阵列基板通过在阵列层远离基板的一侧形成防划伤层，以在切割制程、发光元件绑定制程以及覆晶薄膜绑定制程中对阵列层上的线路起到保护作用，提高阵列基板的良率。\n\n[0032]在一些实施例中，所述防划伤层的制备材料为石墨烯或改性石墨烯中的至少一种。石墨烯具有厚度薄、坚硬的优点，且具有良好的韧性，可以弯曲。石墨烯的杨氏模量达到1.0TPa，拉伸强度为130GPa。改性石墨烯，例如氢等离子改性的还原石墨烯具有良好的强度，平均模量达到0.25TPa。由于石墨烯及石墨烯改性材料具有坚硬且具有韧性的优点，使得防划伤层在阵列基板的制造过程中被划伤或碰撞受损较小，起到包括阵列层的线路，防止线路短路或者断路的问题。\n\n[0033]在一些实施例中，防划伤层包括第一防划伤层和第二防划伤层，第一防划伤层的杨氏模量大于第二防划伤层的杨氏模量，第一防划伤层位于第二防划伤层远离基板的一侧，以使得防划伤层具有良好的防划伤作用的同时，便于后续防划伤层的图案化。例如第一防划伤层的制备材料为石墨烯，第二防划伤层的制备材料为还原石墨烯。第二防划伤层的制备材料为还原石墨烯，由于还原石墨烯相对于石墨烯具有更多的官能团，有利于提高防划伤层与阵列层之间的附着力。第一防划伤层的制备材料为石墨烯，由于石墨烯具有良好的稳定性，例如高温稳定性以及化学稳定性等，有利于提高防划伤层的稳定性。\n\n[0034]在一些实施例中，所述阵列层还包括薄膜晶体管，所述防划伤层对应所述薄膜晶体管设置。阵列基板还可以包括数据线以及扫描线等电路，以驱动发光元件发光。防划伤层对应薄膜晶体管设置，可以对薄膜晶体管中的膜层起到保护作用。\n\n[0035]在一些实施例中，薄膜晶体管可以为蚀刻阻挡型薄膜晶体管，也可以为背沟道薄膜晶体管。薄膜晶体管包括栅极、有源层、源漏电极以及栅极绝缘层，栅极绝缘层设置于栅极以及有源层之间，源漏电极与有源层电性连接。\n\n[0036]在一些实施例中，所述防划伤层的杨氏模量大于或等于0.1TPa，以使得防划伤层相对于普通的无机材料例如氮化硅等具有良好的防划伤效果。防划伤层的杨氏模量可以为0.15TPa、0.5TPa、0.75TPa、1TPa以及2TPa。\n\n[0037]在一些实施例中，所述防划伤层的厚度为50埃-2000埃，以使得防划伤层起到防划伤作用的同时，更容易制备得到且图案化防划伤层的时间缩短，简化制程。例如防划伤层的厚度为100埃、150埃、800埃、1000埃以及1500埃。\n\n[0038]在一些实施例中，所述导电垫和所述导电电极同层设置，以使得导电垫以及导电电极可以通过相同的制程形成，有利于简化制程。\n\n[0039]在一些实施例中，所述导电垫和所述导电电极均包括第一导电子层和所述第二导电子层，所述第二导电子层位于所述第一导电子层远离所述基板的一侧，所述第二导电子层用于防止所述第一导电子层氧化，以使得导电垫和导电电极具有良好的导电性的同时，避免导电垫以及导电电极出现氧化。\n\n[0040]在一些实施例中，第一导电子层的制备材料为铜或铜合金，第二导电子层的制备材料为MoTiNi合金、MoTi合金或MoNi合金。第二导电子层的制备材料为MoTiNi合金使得导电垫以及导电电极具有更好的抗氧化性。\n\n[0041]在一些实施例中，所述导电垫和所述导电电极均还包括第三导电子层，第三导电子层位于第一导电子层靠近基板的一侧，第三导电层的制备材料为Mo或Mo合金，以防止第一导电子层为铜层时出现扩散。\n\n[0042]在一些实施例中，所述发光元件为亚毫米发光二极管(Mini LED)或微型发光二极管(Micro LED)。\n\n[0043]本申请还提供一种显示装置。显示装置可以为液晶显示装置，液晶显示装置包括背光模组，背光模组包括上述阵列基板。显示装置也可以为无机发光二极管显示面板，无机发光二极管显示面板包括上述阵列基板。\n\n[0044]本申请还提供一种阵列基板的制造方法，阵列基板的制造方法的流程图如图1所示，制造方法包括如下步骤：\n\n[0045]S101:于基板上形成阵列层，所述阵列层包括设置于所述基板上的导电垫以及导电电极。\n\n[0046]S102:于所述阵列层远离所述基板的一侧形成防划伤层。\n\n[0047]S103:去除所述防划伤层对应所述导电垫以及所述导电电极的部分，且使所述导电垫以及所述导电电极显露。\n\n[0048]S104:将覆晶薄膜绑定于所述导电垫上，且将发光元件绑定于所述导电电极上，所述覆晶薄膜包括驱动芯片，得所述阵列基板。\n\n[0049]本申请阵列基板的制造方法通过在阵列层远离基板的一侧形成防划伤层，且去除防划伤层对应导电电极以及导电垫的部分，且使导电电极以及导电垫显露后，将发光元件绑定于导电电极上，将覆晶薄膜绑定于导电垫上，以避免在绑定发光元件以及覆晶薄膜的过程中对阵列层上的线路造成损伤，提高产品的良率。\n\n[0050]以下以薄膜晶体管为背沟道蚀刻型薄膜晶体管为例，对阵列基板的制造方法进行详述。\n\n[0051]S201：如图2A所示，在基板上形成栅极以及第一导电构件。\n\n[0052]具体地，在基板100上形成整面的第一导电层，采用第一道黄光制程对第一导电层进行图案化，以得到栅极1011以及第一导电构件1012。其中，第一道黄光制程包括于第一导电层上形成整面的光阻层，利用第一光罩对光阻层进行曝光，且利用显影液进行显影，蚀刻未被光阻层覆盖的第一导电层，剥离剩余的光阻层。其中，第一导电层包括依次叠置于基板100上的钼或钼合金层以及铜或铜合金层，例如第一导电层为依次叠置于基板100上的钼层以及铜层。\n\n[0053]S202:如图2B所示，依次形成覆盖栅极、第一导电构件以及基板的栅极绝缘层和半导体层，且在栅极绝缘层和半导体层上形成对应第一导电构件设置的第一接触孔。\n\n[0054]具体地，形成覆盖栅极1011、第一导电构件1012以及基板100的整面栅极绝缘层102后，在栅极绝缘层102上形成整面的半导体层。栅极绝缘层102的制备材料为氮化硅。半导体层包括a-Si层1031以及n掺杂的a-Si层1032，n掺杂的a-Si层1032位于远离基板100的一侧。再通过光阻涂布、曝光、显影、蚀刻以及剥离的第二道黄光制程以于第一导电构件1012的上方形成贯穿半导体层以及栅极绝缘层102的第一接触孔100a。\n\n[0055]S203:如图2C所示，于第一接触孔中以及半导体层上形成整面的第二导电层，利用构图工艺形成第二导电构件、有源层、源漏电极以及导电垫，第二导电构件通过第一接触孔与第一导电构件接触，源漏电极与有源层接触。\n\n[0056]具体地，于第一接触孔100a中以及半导体层上形成整面的第二导电层后，采用半色调灰阶掩膜(Half Tone)工艺以及两次干法蚀刻以及两次湿法蚀刻，以制备得到第二导电构件1041、有源层1033、源漏电极1042以及导电垫1043，第二导电构件1041通过第一接触孔100a与第一导电构件1012接触，源漏电极1042与有源层1033接触。第二导电层包括依次叠置于半导体层上的Mo层、铜层以及MoTiNi合金层。\n\n[0057]其中，半色调灰阶掩膜(Half Tone)工艺是在第二导电层上形成整面的光层之后，利用半色调灰阶掩膜半对光阻层定义光阻全保留区、光阻半保留区以及光阻完全去除区，其中，待形成第二导电构件1041、源漏电极1042以及导电垫1043的位置为光阻全保留区，待形成有源层1033的沟道的位置为光阻半保留区，待形成源漏电极1042中的源电极和待形成第二导电构件1041之间的区域以及待形成源漏电极1042的漏电极和待形成导电电极1043之间的区域为光阻完全去除区。第一次干法蚀刻是蚀刻光阻完全去除区的第二导电层，第一次湿法蚀刻是蚀刻光阻完全去除区的半导体层。第二次干法蚀刻是蚀刻光阻半保留区的第二导电层，第二次湿法蚀刻是蚀刻光阻半保留区的n掺杂的a-Si层1032。\n\n[0058]S204:如图2D所示，依次形成覆盖第二导电构件、源漏电极、导电垫以及栅极绝缘层的钝化层以及防划伤层，且去除第二导电构件以及导电垫对应的钝化层以及防划伤层。\n\n[0059]具体地，形成覆盖第二导电构件1041、源漏电极1042、导电垫1043以及栅极绝缘层102的整面钝化层105，于钝化层105上形成整面的防划伤层106，采用第三道黄光制程去除第二导电构件1041以及导电垫1043对应的钝化层105以及防划伤层106，以使第二导电构件1041以及导电垫1043显露。钝化层105的制备材料为氮化硅以及氧化硅中的至少一种。防划伤层106的制备材料为石墨烯或改性石墨烯。\n\n[0060]S205:将发光元件绑定于导电电极上，且将覆晶薄膜绑定于第二导电构件上。\n\n[0061]以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10804, 23858, '技术领域\n\n[0001]本申请涉及LED领域，具体涉及一种mini LED显示面板及其制备方法。\n\n背景技术\n\n[0002]柔性显示今年来成为显示应用市场的热门关注点，但目前商用的柔性显示均为OLED技术，但目前的产品OLED仍存在不稳定、封装困难、易烧屏、残影等技术难题。\n\n[0003]Mini-LED(微型发光二极管)这一被众多厂商视为次世代显示的新技术，是将传统LED芯片尺寸微缩至100ˉ300um等级，具有耗电量远小于LCD(液晶显示器)、亮度优于OLED、且自发光等优点，同时，据具有亮度高、发光效率好、轻薄、自发光等优势。若将其进行阵列排列，作为直接显示的应用具有巨大的商业价值。\n\n发明内容\n\n[0004]本发明提供一种mini LED显示面板及其制备方法，用以解决现有技术中OLED产品本身的存在不稳定、封装困难、易烧屏、残影等技术问题。\n\n[0005]本发明提供了一种mini LED显示面板，包括柔性层；薄膜晶体管电路，设于所述柔性层的一侧表面；若干mini led芯片，均匀分布于所述薄膜晶体管电路远离所述柔性层的一侧表面。\n\n[0006]进一步的，mini LED显示面板封装层，设于所述mini led芯片上，且覆盖所述miniled芯片。\n\n[0007]进一步的，所述mini led芯片包括红、绿、蓝三色中的至少两种颜色。\n\n[0008]进一步的，所述mini led芯片包括红、绿、蓝三色中的两种颜色，其中，相邻两个mini led芯片的颜色不同。\n\n[0009]进一步的，mini LED显示面板还包括转换层，间隔设于所述mini led芯片上，且其颜色与任一mini led芯片的颜色均不同。\n\n[0010]本发明还提供了一种mini LED显示面板的制备方法，包括以下步骤：在一基板上涂布一层柔性材料，待柔性材料固化后形成柔性层；在所述柔性层上制备薄膜晶体管电路；在所述薄膜晶体管电路上制备若干均匀分布的mini led芯片；采用激光剥离技术将基板与柔性层分离。\n\n[0011]进一步的，在所述薄膜晶体管电路制备步骤之后，还包括以下步骤：在所述薄膜晶体管电路上制备若干金属电极或非金属电极，其中，每一金属电极或非金属电极的位置对应一mini led芯片；在所述金属电极或非金属电极上制备键合电极。\n\n[0012]进一步的，所述键合电极的材料包括玻璃浆料、或导电银胶、或锡膏、或焊料、或各向异性导电胶中的至少一种。\n\n[0013]进一步的，所述mini led芯片的具体制备步骤如下：在所述薄膜晶体管电路上制备若干均匀分布的mini led芯片，其中所述mini led芯片包括间隔排布的红、绿、蓝三色芯片；或所述mini led芯片包括的红、绿、蓝三色中的两种颜色，且相邻两个mini led芯片的颜色不同，通过喷墨打印技术或转印将转换层间隔覆盖于所述mini led芯片上。\n\n[0014]进一步的，所述转化层的材料包括量子点、荧光粉、钙钛矿中的至少一种。\n\n[0015]本发明的有益效果在于：本发明的一种mini LED显示面板及其制备方法通过将mini LED芯片集成设于柔性层上，实现了mini LED显示面板的全彩显示，降低了mini LED显示面板的厚度，采用转印或喷墨打印的方式将转换层覆盖于mini LED芯片上，在实现mini LED显示面板的全彩显示的同时，能够减少mini LED芯片的制备步骤，降低mini LED显示面板的制备成本。\n\n附图说明\n\n[0016]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0017]图1是实施例1中的mini LED显示面板示意图。\n\n[0018]图2是实施例2中的mini LED显示面板示意图。\n\n[0019]图3是实施例2中的mini led芯片与转换层结构示意图。\n\n[0020]图4是实施例2中的mini led芯片与转换层另一结构示意图。\n\n[0021]图中标号\n\n[0022]10柔性层； 20薄膜晶体管电路；\n\n[0023]30、31mini led芯片； 32转换层；\n\n[0024]40封装层。\n\n具体实施方式\n\n[0025]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0026]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0027]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0028]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0029]实施例1\n\n[0030]本实施例中，如图1所示，本发明的mini LED显示面板包括柔性层10、薄膜晶体管电路20、mini led芯片30以及封装层40。\n\n[0031]柔性层10包括聚二甲基硅氧烷(PDMS，polydimethylsiloxane)、聚酰亚胺薄膜(Polyimide Film)、柔性电路板(Flexible Printed Circuit)中的至少一种，柔性层10具有良好的柔韧性，能够使所述mini LED显示面板实现柔性弯折。\n\n[0032]薄膜晶体管电路20设于柔性层10的一侧表面，薄膜晶体管电路20包括若干薄膜晶体管单元，所述薄膜晶体管单元包括P型低温多晶硅薄膜晶体管或N型低温多晶硅薄膜晶体管，薄膜晶体管电路20包括沿行方向延伸的多条扫描线、多条单端信号线和沿列方向延伸的多条数据线，所述多条扫描线和多条数据线相互交叉绝缘设置，所述薄膜晶体管单元包括栅极、源极和漏极；其中，所述薄膜晶体管单元的栅极与所述扫描线连接，所述薄膜晶体管的源极与所述数据线连接；所述多条单端信号线与所述扫描线和所述数据线绝缘设置，通过每一薄膜晶体管单元的开关实现控制单颗MINI led芯片的目的，从而实现所述miniLED显示面板的单位面积的明暗显示。\n\n[0033]在薄膜晶体管电路20上设有若干金属电极，其中，所述金属电极对应每一miniled芯片30的位置，所述金属电极的材料包括Cu、Al、Au、Ag中的一种或多种材料，所述金属电极用以导通mini led芯片30和薄膜晶体管电路20，实现mini led芯片30和薄膜晶体管电路20的电性连接，在本发明的其他优选实施例中，在薄膜晶体管电路20上设有若干非金属电极，所述非金属电极的材料为ITO材料。\n\n[0034]在薄膜晶体管电路20上的所述金属电极上还设有键合电极材料，所述键合电极材料包括玻璃浆料、导电银胶、锡膏、焊料、各向异性导电胶中的一种或多种材料。\n\n[0035]mini led芯片30阵列分布于薄膜晶体管电路20上，且每一mini led芯片30均对应一金属电极，从而实现通过电信号控制每一mini led芯片30进行发光或熄灭的目的，本实施例中，mini led芯片30包括红色mini led芯片、蓝色mini led芯片以及绿色mini led芯片，且红、绿、蓝三色的mini led芯片间隔分布，从而使得任意相邻的三个mini led芯片30组成三原色单元，即任意相邻的三个mini led芯片30组成一像素单元，用以实现所述miniLED显示面板的全彩显示，提升mini LED显示面板的显示质量。\n\n[0036]封装层40设于薄膜晶体管电路20上，且覆盖mini led芯片30，封装层40的材料为透光材料，其具有良好的隔绝水氧的能力，能够有效避免外界水汽入侵mini led芯片30，提高mini led芯片30的使用寿命，同时透光材料也不会造成mini led芯片30的光损失。\n\n[0037]为了更好的解释本发明，本实施例还提供了一种mini LED显示面板的制备方法，其制备步骤如下：\n\n[0038]在一基板上涂布一层柔性材料，待柔性材料固化后形成柔性层。\n\n[0039]在所述柔性层上制备薄膜晶体管电路，其中薄膜晶体管电路包括若干薄膜晶体管单元，包括沿行方向延伸的多条扫描线、多条单端信号线和沿列方向延伸的多条数据线，所述多条扫描线和多条数据线相互交叉绝缘设置，所述薄膜晶体管单元包括栅极、源极和漏极，所述薄膜晶体管单元的栅极与所述扫描线连接，所述薄膜晶体管的源极与所述数据线连接；所述多条单端信号线与所述扫描线和所述数据线绝缘设置。\n\n[0040]在所述薄膜晶体管电路上制备若干金属电极或非金属电极，其中，每一金属电极或非金属电极的位置对应一mini led芯片。\n\n[0041]在所述金属电极或非金属电极上制备键合电极，用以进一步提升mini led芯片与薄膜晶体管电路的导通率，其中，所述键合电极材料包括玻璃浆料、导电银胶、锡膏、焊料、各向异性导电胶中的一种或多种材料。\n\n[0042]在所述薄膜晶体管电路上制备若干均匀分布的mini led芯片，其中，所述miniled芯片的制备步骤包括通过回流焊接、热压、烘箱中的其中一种加热方式使Mini LED与薄膜晶体管电路形成电性导通，本实施例中，mini led芯片包括红色mini led芯片、蓝色miniled芯片以及绿色mini led芯片，且红、绿、蓝三色的mini led芯片间隔分布。\n\n[0043]对mini led芯片进行封装，形成封装层。\n\n[0044]采用激光剥离技术将基板与柔性层分离。\n\n[0045]本实施例的有益效果在于：本实施例的一种mini LED显示面板及其制备方法通过将mini LED芯片集成设于柔性层上，实现了mini LED显示面板的全彩显示，同时降低了mini LED显示面板的厚度。\n\n[0046]实施例2\n\n[0047]本实施例中，如图2所示，本发明的mini LED显示面板包括柔性层10、薄膜晶体管电路20、mini led芯片31以及封装层40。\n\n[0048]柔性层10包括聚二甲基硅氧烷(PDMS，polydimethylsiloxane)、聚酰亚胺薄膜(PolyimideFilm)、柔性电路板(Flexible Printed Circuit)中的至少一种，柔性层10具有良好的柔韧性，能够使所述mini LED显示面板实现柔性弯折。\n\n[0049]薄膜晶体管电路20设于柔性层10的一侧表面，薄膜晶体管电路20包括若干薄膜晶体管单元，所述薄膜晶体管单元包括P型低温多晶硅薄膜晶体管或N型低温多晶硅薄膜晶体管，薄膜晶体管电路20包括沿行方向延伸的多条扫描线、多条单端信号线和沿列方向延伸的多条数据线，所述多条扫描线和多条数据线相互交叉绝缘设置，所述薄膜晶体管单元包括栅极、源极和漏极；其中，所述薄膜晶体管单元的栅极与所述扫描线连接，所述薄膜晶体管的源极与所述数据线连接；所述多条单端信号线与所述扫描线和所述数据线绝缘设置，通过每一薄膜晶体管单元的开关实现控制单颗MINI led芯片的目的，从而实现所述miniLED显示面板的单位面积的明暗显示。\n\n[0050]在薄膜晶体管电路20上设有若干金属电极，其中，所述金属电极对应每一miniled芯片31的位置，所述金属电极的材料包括Cu、Al、Au、Ag中的一种或多种材料，所述金属电极用以导通mini led芯片31和薄膜晶体管电路20，实现mini led芯片31和薄膜晶体管电路20的电性连接，在本发明的其他优选实施例中，在薄膜晶体管电路20上设有若干非金属电极，所述非金属电极的材料为ITO材料。\n\n[0051]在薄膜晶体管电路20上的所述金属电极上还设有键合电极材料，所述键合电极材料包括玻璃浆料、导电银胶、锡膏、焊料、各向异性导电胶中的一种或多种材料。\n\n[0052]mini led芯片31阵列分布于薄膜晶体管电路20上，且每一mini led芯片31均对应一金属电极，从而实现通过电信号控制每一mini led芯片31进行发光或熄灭的目的，本实施例中，mini led芯片31包括红色mini led芯片、蓝色mini led芯片以及绿色mini led芯片中的两种，且相邻的mini led芯片31颜色不同，转换层32设于部分mini led芯片31上，且相邻的转换层32间隔两个mini led芯片，其中，转换层32的颜色与任一mini led芯片31的颜色均不同，本实施例中，mini led芯片31包括蓝色mini led芯片以及绿色mini led芯片，其中，转换层32间隔设于部分mini led芯片31上，且相邻的转换层32间隔两个mini led芯片，从而确保任意相邻的三个mini led芯片31组成三原色单元，即任意相邻的三个miniled芯片31组成一像素单元，用以实现所述mini LED显示面板的全彩显示，提升mini LED显示面板的显示质量，转化层32的材料为红色量子点材料，这样即使其覆盖的mini led芯片为蓝色光源或绿色光源，其也会激发红色光，从而使得转化层32覆盖的mini led芯片呈现红色。在本发明的其他优选实施例中，转换层32的材料也可为荧光粉或钙钛矿材料，且miniled芯片31包括红色mini led芯片、蓝色mini led芯片以及绿色mini led芯片中的其中两种颜色，转换层的颜色为三原色之一，且能够与mini led芯片31组合形成三原色，从而实现所述mini LED显示面板的全彩显示。\n\n[0053]封装层40设于薄膜晶体管电路20上，且覆盖mini led芯片31和转换层32，封装层40的材料为透光材料，其具有良好的隔绝水氧的能力，能够有效避免外界水汽入侵miniled芯片31，提高mini led芯片31的使用寿命，同时透光材料也不会造成mini led芯片31的光损失。\n\n[0054]为了更好的解释本发明，本实施例还提供了一种mini LED显示面板的制备方法，其制备步骤如下：\n\n[0055]在一基板上涂布一层柔性材料，待柔性材料固化后形成柔性层。\n\n[0056]在所述柔性层上制备薄膜晶体管电路，其中薄膜晶体管电路包括若干薄膜晶体管单元，包括沿行方向延伸的多条扫描线、多条单端信号线和沿列方向延伸的多条数据线，所述多条扫描线和多条数据线相互交叉绝缘设置，所述薄膜晶体管单元包括栅极、源极和漏极，所述薄膜晶体管单元的栅极与所述扫描线连接，所述薄膜晶体管的源极与所述数据线连接；所述多条单端信号线与所述扫描线和所述数据线绝缘设置。\n\n[0057]在所述薄膜晶体管电路上制备若干金属电极或非金属电极，其中，每一金属电极或非金属电极的位置对应一mini led芯片。\n\n[0058]在所述金属电极或非金属电极上制备键合电极，用以进一步提升mini led芯片与薄膜晶体管电路的导通率，其中，所述键合电极材料包括玻璃浆料、导电银胶、锡膏、焊料、各向异性导电胶中的一种或多种材料。\n\n[0059]在所述薄膜晶体管电路上制备若干均匀分布的mini led芯片，其中，所述miniled芯片的制备步骤包括通过回流焊接、热压、烘箱中的其中一种加热方式使Mini LED与薄膜晶体管电路形成电性导通，本实施例中，mini led芯片包括蓝色mini led芯片以及绿色mini led芯片，且绿、蓝两色的mini led芯片间隔分布。\n\n[0060]如图3和图4所示，通过喷墨打印技术或转印技术在部分蓝色mini led芯片上制备转换层，其中转换层的材料包括量子点、荧光粉或钙钛矿材料，且其颜色为红色，相邻转换层之间间隔两个mini led芯片，使得任意相邻的三个用mini led芯片为三色显示。\n\n[0061]对mini led芯片和转化层进行封装，形成封装层。\n\n[0062]采用激光剥离技术将基板与柔性层分离。\n\n[0063]本实施例的一种mini LED显示面板及其制备方法通过将mini LED芯片集成设于柔性层上，实现了mini LED显示面板的全彩显示，降低了mini LED显示面板的厚度，采用转印或喷墨打印的方式将转换层覆盖于mini LED芯片上，在实现mini LED显示面板的全彩显示的同时，能够减少mini LED芯片的制备步骤，降低mini LED显示面板的制备成本。\n\n[0064]以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及LED领域，具体涉及一种mini LED显示面板及其制备方法。\n\n背景技术\n\n[0002]柔性显示今年来成为显示应用市场的热门关注点，但目前商用的柔性显示均为OLED技术，但目前的产品OLED仍存在不稳定、封装困难、易烧屏、残影等技术难题。\n\n[0003]Mini-LED(微型发光二极管)这一被众多厂商视为次世代显示的新技术，是将传统LED芯片尺寸微缩至100ˉ300um等级，具有耗电量远小于LCD(液晶显示器)、亮度优于OLED、且自发光等优点，同时，据具有亮度高、发光效率好、轻薄、自发光等优势。若将其进行阵列排列，作为直接显示的应用具有巨大的商业价值。\n\n发明内容\n\n[0004]本发明提供一种mini LED显示面板及其制备方法，用以解决现有技术中OLED产品本身的存在不稳定、封装困难、易烧屏、残影等技术问题。\n\n[0005]本发明提供了一种mini LED显示面板，包括柔性层；薄膜晶体管电路，设于所述柔性层的一侧表面；若干mini led芯片，均匀分布于所述薄膜晶体管电路远离所述柔性层的一侧表面。\n\n[0006]进一步的，mini LED显示面板封装层，设于所述mini led芯片上，且覆盖所述miniled芯片。\n\n[0007]进一步的，所述mini led芯片包括红、绿、蓝三色中的至少两种颜色。\n\n[0008]进一步的，所述mini led芯片包括红、绿、蓝三色中的两种颜色，其中，相邻两个mini led芯片的颜色不同。\n\n[0009]进一步的，mini LED显示面板还包括转换层，间隔设于所述mini led芯片上，且其颜色与任一mini led芯片的颜色均不同。\n\n[0010]本发明还提供了一种mini LED显示面板的制备方法，包括以下步骤：在一基板上涂布一层柔性材料，待柔性材料固化后形成柔性层；在所述柔性层上制备薄膜晶体管电路；在所述薄膜晶体管电路上制备若干均匀分布的mini led芯片；采用激光剥离技术将基板与柔性层分离。\n\n[0011]进一步的，在所述薄膜晶体管电路制备步骤之后，还包括以下步骤：在所述薄膜晶体管电路上制备若干金属电极或非金属电极，其中，每一金属电极或非金属电极的位置对应一mini led芯片；在所述金属电极或非金属电极上制备键合电极。\n\n[0012]进一步的，所述键合电极的材料包括玻璃浆料、或导电银胶、或锡膏、或焊料、或各向异性导电胶中的至少一种。\n\n[0013]进一步的，所述mini led芯片的具体制备步骤如下：在所述薄膜晶体管电路上制备若干均匀分布的mini led芯片，其中所述mini led芯片包括间隔排布的红、绿、蓝三色芯片；或所述mini led芯片包括的红、绿、蓝三色中的两种颜色，且相邻两个mini led芯片的颜色不同，通过喷墨打印技术或转印将转换层间隔覆盖于所述mini led芯片上。\n\n[0014]进一步的，所述转化层的材料包括量子点、荧光粉、钙钛矿中的至少一种。\n\n[0015]本发明的有益效果在于：本发明的一种mini LED显示面板及其制备方法通过将mini LED芯片集成设于柔性层上，实现了mini LED显示面板的全彩显示，降低了mini LED显示面板的厚度，采用转印或喷墨打印的方式将转换层覆盖于mini LED芯片上，在实现mini LED显示面板的全彩显示的同时，能够减少mini LED芯片的制备步骤，降低mini LED显示面板的制备成本。\n\n附图说明\n\n[0016]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0017]图1是实施例1中的mini LED显示面板示意图。\n\n[0018]图2是实施例2中的mini LED显示面板示意图。\n\n[0019]图3是实施例2中的mini led芯片与转换层结构示意图。\n\n[0020]图4是实施例2中的mini led芯片与转换层另一结构示意图。\n\n[0021]图中标号\n\n[0022]10柔性层； 20薄膜晶体管电路；\n\n[0023]30、31mini led芯片； 32转换层；\n\n[0024]40封装层。\n\n具体实施方式\n\n[0025]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0026]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0027]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0028]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0029]实施例1\n\n[0030]本实施例中，如图1所示，本发明的mini LED显示面板包括柔性层10、薄膜晶体管电路20、mini led芯片30以及封装层40。\n\n[0031]柔性层10包括聚二甲基硅氧烷(PDMS，polydimethylsiloxane)、聚酰亚胺薄膜(Polyimide Film)、柔性电路板(Flexible Printed Circuit)中的至少一种，柔性层10具有良好的柔韧性，能够使所述mini LED显示面板实现柔性弯折。\n\n[0032]薄膜晶体管电路20设于柔性层10的一侧表面，薄膜晶体管电路20包括若干薄膜晶体管单元，所述薄膜晶体管单元包括P型低温多晶硅薄膜晶体管或N型低温多晶硅薄膜晶体管，薄膜晶体管电路20包括沿行方向延伸的多条扫描线、多条单端信号线和沿列方向延伸的多条数据线，所述多条扫描线和多条数据线相互交叉绝缘设置，所述薄膜晶体管单元包括栅极、源极和漏极；其中，所述薄膜晶体管单元的栅极与所述扫描线连接，所述薄膜晶体管的源极与所述数据线连接；所述多条单端信号线与所述扫描线和所述数据线绝缘设置，通过每一薄膜晶体管单元的开关实现控制单颗MINI led芯片的目的，从而实现所述miniLED显示面板的单位面积的明暗显示。\n\n[0033]在薄膜晶体管电路20上设有若干金属电极，其中，所述金属电极对应每一miniled芯片30的位置，所述金属电极的材料包括Cu、Al、Au、Ag中的一种或多种材料，所述金属电极用以导通mini led芯片30和薄膜晶体管电路20，实现mini led芯片30和薄膜晶体管电路20的电性连接，在本发明的其他优选实施例中，在薄膜晶体管电路20上设有若干非金属电极，所述非金属电极的材料为ITO材料。\n\n[0034]在薄膜晶体管电路20上的所述金属电极上还设有键合电极材料，所述键合电极材料包括玻璃浆料、导电银胶、锡膏、焊料、各向异性导电胶中的一种或多种材料。\n\n[0035]mini led芯片30阵列分布于薄膜晶体管电路20上，且每一mini led芯片30均对应一金属电极，从而实现通过电信号控制每一mini led芯片30进行发光或熄灭的目的，本实施例中，mini led芯片30包括红色mini led芯片、蓝色mini led芯片以及绿色mini led芯片，且红、绿、蓝三色的mini led芯片间隔分布，从而使得任意相邻的三个mini led芯片30组成三原色单元，即任意相邻的三个mini led芯片30组成一像素单元，用以实现所述miniLED显示面板的全彩显示，提升mini LED显示面板的显示质量。\n\n[0036]封装层40设于薄膜晶体管电路20上，且覆盖mini led芯片30，封装层40的材料为透光材料，其具有良好的隔绝水氧的能力，能够有效避免外界水汽入侵mini led芯片30，提高mini led芯片30的使用寿命，同时透光材料也不会造成mini led芯片30的光损失。\n\n[0037]为了更好的解释本发明，本实施例还提供了一种mini LED显示面板的制备方法，其制备步骤如下：\n\n[0038]在一基板上涂布一层柔性材料，待柔性材料固化后形成柔性层。\n\n[0039]在所述柔性层上制备薄膜晶体管电路，其中薄膜晶体管电路包括若干薄膜晶体管单元，包括沿行方向延伸的多条扫描线、多条单端信号线和沿列方向延伸的多条数据线，所述多条扫描线和多条数据线相互交叉绝缘设置，所述薄膜晶体管单元包括栅极、源极和漏极，所述薄膜晶体管单元的栅极与所述扫描线连接，所述薄膜晶体管的源极与所述数据线连接；所述多条单端信号线与所述扫描线和所述数据线绝缘设置。\n\n[0040]在所述薄膜晶体管电路上制备若干金属电极或非金属电极，其中，每一金属电极或非金属电极的位置对应一mini led芯片。\n\n[0041]在所述金属电极或非金属电极上制备键合电极，用以进一步提升mini led芯片与薄膜晶体管电路的导通率，其中，所述键合电极材料包括玻璃浆料、导电银胶、锡膏、焊料、各向异性导电胶中的一种或多种材料。\n\n[0042]在所述薄膜晶体管电路上制备若干均匀分布的mini led芯片，其中，所述miniled芯片的制备步骤包括通过回流焊接、热压、烘箱中的其中一种加热方式使Mini LED与薄膜晶体管电路形成电性导通，本实施例中，mini led芯片包括红色mini led芯片、蓝色miniled芯片以及绿色mini led芯片，且红、绿、蓝三色的mini led芯片间隔分布。\n\n[0043]对mini led芯片进行封装，形成封装层。\n\n[0044]采用激光剥离技术将基板与柔性层分离。\n\n[0045]本实施例的有益效果在于：本实施例的一种mini LED显示面板及其制备方法通过将mini LED芯片集成设于柔性层上，实现了mini LED显示面板的全彩显示，同时降低了mini LED显示面板的厚度。\n\n[0046]实施例2\n\n[0047]本实施例中，如图2所示，本发明的mini LED显示面板包括柔性层10、薄膜晶体管电路20、mini led芯片31以及封装层40。\n\n[0048]柔性层10包括聚二甲基硅氧烷(PDMS，polydimethylsiloxane)、聚酰亚胺薄膜(PolyimideFilm)、柔性电路板(Flexible Printed Circuit)中的至少一种，柔性层10具有良好的柔韧性，能够使所述mini LED显示面板实现柔性弯折。\n\n[0049]薄膜晶体管电路20设于柔性层10的一侧表面，薄膜晶体管电路20包括若干薄膜晶体管单元，所述薄膜晶体管单元包括P型低温多晶硅薄膜晶体管或N型低温多晶硅薄膜晶体管，薄膜晶体管电路20包括沿行方向延伸的多条扫描线、多条单端信号线和沿列方向延伸的多条数据线，所述多条扫描线和多条数据线相互交叉绝缘设置，所述薄膜晶体管单元包括栅极、源极和漏极；其中，所述薄膜晶体管单元的栅极与所述扫描线连接，所述薄膜晶体管的源极与所述数据线连接；所述多条单端信号线与所述扫描线和所述数据线绝缘设置，通过每一薄膜晶体管单元的开关实现控制单颗MINI led芯片的目的，从而实现所述miniLED显示面板的单位面积的明暗显示。\n\n[0050]在薄膜晶体管电路20上设有若干金属电极，其中，所述金属电极对应每一miniled芯片31的位置，所述金属电极的材料包括Cu、Al、Au、Ag中的一种或多种材料，所述金属电极用以导通mini led芯片31和薄膜晶体管电路20，实现mini led芯片31和薄膜晶体管电路20的电性连接，在本发明的其他优选实施例中，在薄膜晶体管电路20上设有若干非金属电极，所述非金属电极的材料为ITO材料。\n\n[0051]在薄膜晶体管电路20上的所述金属电极上还设有键合电极材料，所述键合电极材料包括玻璃浆料、导电银胶、锡膏、焊料、各向异性导电胶中的一种或多种材料。\n\n[0052]mini led芯片31阵列分布于薄膜晶体管电路20上，且每一mini led芯片31均对应一金属电极，从而实现通过电信号控制每一mini led芯片31进行发光或熄灭的目的，本实施例中，mini led芯片31包括红色mini led芯片、蓝色mini led芯片以及绿色mini led芯片中的两种，且相邻的mini led芯片31颜色不同，转换层32设于部分mini led芯片31上，且相邻的转换层32间隔两个mini led芯片，其中，转换层32的颜色与任一mini led芯片31的颜色均不同，本实施例中，mini led芯片31包括蓝色mini led芯片以及绿色mini led芯片，其中，转换层32间隔设于部分mini led芯片31上，且相邻的转换层32间隔两个mini led芯片，从而确保任意相邻的三个mini led芯片31组成三原色单元，即任意相邻的三个miniled芯片31组成一像素单元，用以实现所述mini LED显示面板的全彩显示，提升mini LED显示面板的显示质量，转化层32的材料为红色量子点材料，这样即使其覆盖的mini led芯片为蓝色光源或绿色光源，其也会激发红色光，从而使得转化层32覆盖的mini led芯片呈现红色。在本发明的其他优选实施例中，转换层32的材料也可为荧光粉或钙钛矿材料，且miniled芯片31包括红色mini led芯片、蓝色mini led芯片以及绿色mini led芯片中的其中两种颜色，转换层的颜色为三原色之一，且能够与mini led芯片31组合形成三原色，从而实现所述mini LED显示面板的全彩显示。\n\n[0053]封装层40设于薄膜晶体管电路20上，且覆盖mini led芯片31和转换层32，封装层40的材料为透光材料，其具有良好的隔绝水氧的能力，能够有效避免外界水汽入侵miniled芯片31，提高mini led芯片31的使用寿命，同时透光材料也不会造成mini led芯片31的光损失。\n\n[0054]为了更好的解释本发明，本实施例还提供了一种mini LED显示面板的制备方法，其制备步骤如下：\n\n[0055]在一基板上涂布一层柔性材料，待柔性材料固化后形成柔性层。\n\n[0056]在所述柔性层上制备薄膜晶体管电路，其中薄膜晶体管电路包括若干薄膜晶体管单元，包括沿行方向延伸的多条扫描线、多条单端信号线和沿列方向延伸的多条数据线，所述多条扫描线和多条数据线相互交叉绝缘设置，所述薄膜晶体管单元包括栅极、源极和漏极，所述薄膜晶体管单元的栅极与所述扫描线连接，所述薄膜晶体管的源极与所述数据线连接；所述多条单端信号线与所述扫描线和所述数据线绝缘设置。\n\n[0057]在所述薄膜晶体管电路上制备若干金属电极或非金属电极，其中，每一金属电极或非金属电极的位置对应一mini led芯片。\n\n[0058]在所述金属电极或非金属电极上制备键合电极，用以进一步提升mini led芯片与薄膜晶体管电路的导通率，其中，所述键合电极材料包括玻璃浆料、导电银胶、锡膏、焊料、各向异性导电胶中的一种或多种材料。\n\n[0059]在所述薄膜晶体管电路上制备若干均匀分布的mini led芯片，其中，所述miniled芯片的制备步骤包括通过回流焊接、热压、烘箱中的其中一种加热方式使Mini LED与薄膜晶体管电路形成电性导通，本实施例中，mini led芯片包括蓝色mini led芯片以及绿色mini led芯片，且绿、蓝两色的mini led芯片间隔分布。\n\n[0060]如图3和图4所示，通过喷墨打印技术或转印技术在部分蓝色mini led芯片上制备转换层，其中转换层的材料包括量子点、荧光粉或钙钛矿材料，且其颜色为红色，相邻转换层之间间隔两个mini led芯片，使得任意相邻的三个用mini led芯片为三色显示。\n\n[0061]对mini led芯片和转化层进行封装，形成封装层。\n\n[0062]采用激光剥离技术将基板与柔性层分离。\n\n[0063]本实施例的一种mini LED显示面板及其制备方法通过将mini LED芯片集成设于柔性层上，实现了mini LED显示面板的全彩显示，降低了mini LED显示面板的厚度，采用转印或喷墨打印的方式将转换层覆盖于mini LED芯片上，在实现mini LED显示面板的全彩显示的同时，能够减少mini LED芯片的制备步骤，降低mini LED显示面板的制备成本。\n\n[0064]以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10805, 23859, '技术领域\n\n[0001]本揭示涉及显示技术领域，特别是涉及一种微型发光二极管显示装置及其制造方法。\n\n背景技术\n\n[0002]现有的微型发光二极管(micro light-emitting diode，micro LED)显示装置的制备方法，主要是将micro LED从生长基板直接转移到驱动基板(driving substrate)上，因此需等待驱动基板的驱动电路层形成后再转移微型发光二极管至驱动电路层上。随着科技的发展，micro LED的尺寸越来越小，使得microLED在驱动基板上的间距可越来越小且密度可越来越大。此使micro LED显示装置的像素密度(pixels per inch，PPI)可越来越大。就500PPI的5英寸手机屏幕而言，其包含约800万颗microLED。现有的巨量转移技术一般需要数次的转移，才能转移完一个手机屏幕所需的micro LED数量，因此转移微型发光二极管极为耗时。此外，现有的巨量转移技术在转移前需要先在驱动基板的显示区内设置数个对位标记，以确保转移的精确度。然而，在PPI日益增加的需求下，当对位标记的尺寸大于像素的尺寸时，将会影响显示装置的显示效果。\n\n发明内容\n\n[0003]为了解决现有显示装置中的驱动基板显示区因设有转移微型发光二极管用的对位标记而影响显示效果的技术问题，本揭示提供一种微型发光二极管显示装置的制造方法。所述方法包含：提供含第一显示区的一驱动基板，其中所述驱动基板在结构上包含第一基板及设置在第一基板上的一驱动电路层，且在所述第一显示区内的驱动电路层包含第一电极及第二电极；提供含第二显示区的一转移基板，其中所述转移基板在结构上包含第二基板及分别设置在所述第二显示区内第二基板的两相对表面的一对位标记及一微型发光二极管，其中所述微型发光二极管包含一P电极及一N电极；通过所述对位标记贴合所述驱动基板及所述转移基板，使所述驱动电路层的第一电极及第二电极分别电连接于所述微型发光二极管的P电极及N电极；以及去除所述对位标记。\n\n[0004]在一实施例中，提供所述转移基板包含：提供第二基板；形成所述对位标记于所述第二显示区内第二基板的第一表面；形成所述微型发光二极管于一生长基板；以及将所述微型发光二极管从所述生长基板转移至所述第二显示区内第二基板的第二表面。第一表面与第二表面为第二基板的两相对面。\n\n[0005]在一实施例中，提供所述转移基板还包含：在转移所述微型发光二极管至所述第二基板后，检测所述微型发光二极管的瑕疵；以及当所述微型发光二极管被检测为不良品时，转移另一微型发光二极管，以替换所述微型发光二极管。\n\n[0006]在一实施例中，提供所述驱动基板包含：提供所述第一基板；及形成所述驱动电路层于所述第一基板上。再者，形成所述驱动电路层与转移所述微型发光二极管同步进行。\n\n[0007]在一实施例中，所述方法还包含：在去除所述对位标记的同时，薄化所述第二基板。\n\n[0008]在一实施例中，所述微型发光二极管为水平式(lateral)或垂直式(vertical)微型发光二极管。\n\n[0009]在一实施例中，所述驱动基板的第一显示区未设有用于转移所述微型发光二极管至其上的一对位标记。\n\n[0010]本揭示还提供一种微型发光二极管显示装置，其包含一含有第一显示区的驱动基板及一含有第二显示区的转移基板。所述驱动基板在结构上包含第一基板及设置在第一基板上的一驱动电路层。所述第一显示区内的驱动电路层包含第一电极及第二电极。所述转移基板在结构上包含第二基板及设置在所述第二显示区内第二基板的一表面的一微型发光二极管。所述微型发光二极管包含一P电极及一N电极。所述转移基板贴合于所述驱动基板。第二显示区对准第一显示区。所述微型发光二极管的P电极及N电极分别电连接于所述驱动电路层的第一电极及第二电极。\n\n[0011]在一实施例中，所述微型发光二极管为水平式或垂直式微型发光二极管。\n\n[0012]在一实施例中，所述驱动基板的第一显示区未设有用于转移所述微型发光二极管至其上的一对位标记。\n\n[0013]相较于现有的微型发光二极管显示装置的制造方法，本发明方法通过(1)分别设置对位标记及转移微型发光二极管至第二基板显示区的两相对表面，以形成转移基板；(2)通过对位标记贴合驱动基板及转移基板，使微型发光二极管的P电极及N电极分别电连接于驱动基板显示区的驱动电路层的第一电极及第二电极；以及(3)去除所述对位标记，来达到下列功效：(1)形成驱动基板的驱动电路层与转移微型发光二极管至第二基板可同步进行，以减少制造所需的时间；以及(2)转移基板显示区的对位标记最终会去除，且无需在驱动基板的显示区设置对位标记，因此不会影响最终制成的微型发光二极管显示装置的显示效果。\n\n附图说明\n\n[0014]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0015]图1为本揭示实施例的驱动基板的示意图。\n\n[0016]图2为图1的驱动基板沿A-A’线的剖面示意图。\n\n[0017]图3为本揭示实施例的转移基板的示意图。\n\n[0018]图4为图3的转移基板沿B-B’线的剖面示意图。\n\n[0019]图5为图4的第二基板与对位标记的示意图。\n\n[0020]图6为本揭示实施例的形成有微型发光二极管的生长基板的剖面示意图。\n\n[0021]图7为图4的微型发光二极管具有水平结构的示意图。\n\n[0022]图8为图4的微型发光二极管具有垂直结构的第二种示意图。\n\n[0023]图9为图1的驱动基板与图3的转移基板相对的示意图。\n\n[0024]图10为图1的驱动基板与图3的转移基板贴合的示意图。\n\n[0025]图11为图10中经贴合后的驱动基板及转移基板的正视图。\n\n[0026]图12为图11中经贴合后的驱动基板及转移基板沿C-C’线的剖面示意图。\n\n[0027]图13为图12的对位标记经去除且第二基板经薄化的示意图。\n\n[0028]图14为本揭示实施例的微型发光二极管显示装置的示意图。\n\n[0029]图15为图14的微型发光二极管显示装置的剖面示意图。\n\n具体实施方式\n\n[0030]本揭示提供一种微型发光二极管显示装置的制造方法，其包含下列步骤。\n\n[0031]步骤1：请参阅图1及图2，提供一驱动基板10。所述驱动基板10包含数个以阵列排列的第一显示区11。所述驱动基板10在结构上包含第一基板12及设置在第一基板12上的一驱动电路层13。在每一第一显示区11内的驱动电路层13包含数个第一电极14及数个第二电极15。\n\n[0032]具体地，步骤1的提供所述驱动基板10包含步骤11及步骤12。\n\n[0033]步骤11：提供所述第一基板12。第一基板12可为由一玻璃所制成的刚性基板，例如石英玻璃、高硅氧玻璃(high-silica glass)、硼硅酸玻璃(borosilicate glass)、钠钙玻璃(soda-lime glass)及铝硅酸盐玻璃(aluminosilicate glass)。第一基板12亦可为由一柔性绝缘聚合物材料所制成的柔性基板，诸如聚酰亚胺(polyimide，PI)、聚碳酸酯(polycarbonate，PC)、聚醚砜(polyether sulfone，PES)、聚对苯二甲酸乙二醇酯(polyethylene terephthalate，PET)、聚萘二甲酸乙二醇酯(polyethylene naphthalate，PEN)、及薄膜纤维增强聚合物(fiber-reinforced polymer，FRP)。第一基板12可为透明的、半透明的或不透明的。\n\n[0034]步骤12：形成所述驱动电路层13于所述第一基板11上，以得到所述驱动基板10。驱动基板10可为用于液晶显示装置中的主动式矩阵基板(active matrix substrate)。所述驱动电路层13包含数据线、扫描线及主动元件。所述主动元件可为氧化物薄膜晶体管(诸如铟镓锌氧化物(indium gallium zinc oxide，IGZO)薄膜晶体管)、有机薄膜晶体管(Organic TFTs，OTFT)、非晶态薄膜晶体管(hydrogenated amorphous TFTs，简称a-TFT:H)、低温复晶态薄膜晶体管(low temperature poly TFTs，简称LTPS)或其组合，但不限于此。所述主动元件可为底栅型、顶栅型或双栅型薄膜晶体管。\n\n[0035]步骤2：请参阅图3及图4，提供一转移基板30。所述转移基板30包含数个以阵列排列的第二显示区31。所述转移基板30在结构上包含第二基板32及分别设置在每一第二显示区31内第二基板32的两相对表面的数个对位标记33及数个微型发光二极管21。每一微型发光二极管21包含一P电极22及一N电极23。\n\n[0036]具体地，步骤2的提供所述转移基板30包含包含步骤21至步骤25。\n\n[0037]步骤21：请参阅图5，提供第二基板32。第二基板32可为由一玻璃所制成的刚性基板，例如石英玻璃、高硅氧玻璃、硼硅酸玻璃、钠钙玻璃及铝硅酸盐玻璃。第二基板32亦可为由一柔性绝缘聚合物材料所制成的柔性基板，诸如聚酰亚胺、聚碳酸酯、聚醚砜、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯及薄膜纤维增强聚合物。第二基板32可为透明的、半透明的或不透明的。第二基板32的材料可与第一基板12的材料相同或不同。\n\n[0038]步骤22：请参阅图5，形成所述数个对位标记33于每一第二显示区31内第二基板32的第一表面34。\n\n[0039]步骤23：请参阅图6，形成所述数个微型发光二极管21于一生长基板20。所述数个微型发光二极管21可包含蓝光微型发光二极管、红光微型发光二极管、绿光微型发光二极管或其组合，但不限于此。\n\n[0040]步骤24：请参阅图4至图6，将所述数个微型发光二极管21从所述生长基板20转移至每一第二显示区31内的第二基板32的第二表面35。第一表面34与第二表面35为第二基板32的两相对面。\n\n[0041]步骤25：检测所述数个微型发光二极管21是否有瑕疵。当所述微型发光二极管21被检测为不良品时，转移另一微型发光二极管21，以替换所述微型发光二极管21。\n\n[0042]在一实施例中，步骤1的提供所述驱动基板10与步骤2的提供所述转移基板30，同步进行。在一实施例中，步骤12的形成所述驱动电路层13于所述第一基板11上与步骤24的转移所述微型发光二极管21至第二基板32上，同步进行。\n\n[0043]在一实施例中，请参阅图7，微型发光二极管21可为水平式(lateral)微型发光二极管，其包含N型半导体层24、发光层25、P型半导体层26、透明导电层27、P电极22及N电极23。在此实施例中，请参阅图6及图7，步骤23的形成所述数个微型发光二极管21于一生长基板20包含：在所述生长基板20上依序形成N型半导体层24、发光层25、P型半导体层26、透明导电层27及P电极22；图案化P电极22；蚀刻发光层25、P型半导体层26及透明导电层27，以曝露出N型半导体层24的一部分；以及在经曝露的N型半导体层24上形成N电极23。\n\n[0044]在一实施例中，请参阅图8，微型发光二极管21可为垂直式(vertical)微型发光二极管，其包含N电极23、N型半导体层24、发光层25、P型半导体层26及P电极22。在此实施例中，步骤23的形成所述数个微型发光二极管21于一生长基板20包含：在所述生长基板20上依序形成N电极23、N型半导体层24、发光层25、P型半导体层26及P电极22。垂直式(vertical)微型发光二极管的制程为习知技术，因此不再作详细描述。\n\n[0045]图7及图8仅为本揭示的微型发光二极管21的示例。本揭示的微型发光二极管21的结构及形状不以图7及图8所示的结构及形状为限。本揭示的微型发光二极管21包含所有含P电极及N电极的微型发光二极管。因此，步骤23的形成所述数个微型发光二极管21于一生长基板20，不限于前述以图7及图8的微型发光二极管21为例所做的说明。\n\n[0046]请参阅图7及图8，N型半导体层24可由N型氮化物所制成，诸如经硅(Si)掺杂的氮化镓(GaN)，但不限于此。发光层25可为由氮化铟镓(InGaN)及氮化镓(GaN)制成的单量子阱(single quantum well，SQW)或多量子阱(multi-quantum well，MQW)，但不限于此。P型半导体层26可由P型氮化物所制成，诸如经镁(Mg)掺杂的氮化镓，但不限于此。透明导电层27可由一金属氧化物所制成，例如氧化铟、氧化锌、氧化钛、氧化镁或氧化铟锡(Indium TinOxide，ITO)，但不限于此。P电极22及N电极23的材料可为金(Au)、镍(Ni)、银(Ag)、铜(Cu)、铂(Pt)、铬(Cr)、锌(Zn)、钯(Pd)、铝(Al)、钛(Ti)或其合金，例如镍金合金、钯金合金、金锌合金，但不限于此。P电极22及N电极23的材料亦可为一金属氧化物，例如氧化铟、氧化锌、氧化钛、氧化镁及氧化铟锡。P电极22及N电极23亦可为具有多层结构的复合电极，例如Cr/Pt/Au、Cr/Al/Pt/Au、Ti/Al/Ti/Au、Ti/Al/Ti/Pt/Au、Ti/Al/Pt/Au。N型半导体层24、发光层25及P型半导体层26可通过金属有机化学气相沉积(Metal-organic Chemical VaporDeposition，MOCVD)或金属有机物理气相沉积(Metal-organic physical VaporDeposition，MOPVD)制成，但不限于此。P电极22、N电极23及透明导电层27可通过物理气相沉积制成，但不限于此。\n\n[0047]步骤3：请参阅图9至图12，通过所述数个对位标记33贴合所述驱动基板10及所述转移基板30，使每一第一显示区11对准相对应的第二显示区31，且每一第一电极14及每一第二电极15分别对准并电连接于相对应的P电极22及N电极23。在一实施例中，如图9至图12所示，将所述转移基板30移至所述驱动基板10的上方。接着，通过所述对位标记33使每一第二显示区31对准相对应的第一显示区11，且每一微型发光二极管21的P电极22及N电极23分别对准相对应的第一电极14及第二电极15。最后，将所述驱动基板10贴合于所述转移基板30，且将每一微型发光二极管21的P电极22及N电极23分别电连接于相对应的第一电极14及第二电极15。在一实施例中，所述驱动基板10可移至所述转移基板30的上方。接着，通过所述对位标记33，使每一第一显示区11对准相对应的第二显示区31，且每一第一电极14及每一第二电极15分别对准相对应的P电极22及N电极23。最后，将所述转移基板30贴合于所述驱动基板10，且将每一第一电极14及每一第二电极15分别电连接于相对应的P电极22及N电极23。\n\n[0048]用语「电连接」包含「直接电连接」与「间接电连接」。「直接电连接」是指两元件不通过其他元件或材料而电连接在一起，例如以激光点焊(laser spot welding)方式电连接两元件。「间接电连接」是指两元件之间通过其他元件(例如各向异性导电薄膜(anisotropicconductive film，ACF))或材料(例如各向异性导电胶(anisotropic conductive paste，ACP))而电连接在一起。\n\n[0049]在一实施例中，可通过在所述驱动基板10的每一第一显示区11外围及/或所述转移基板30的每一第二显示区31外围涂布一绝缘框胶来贴合所述驱动基板10及所述转移基板30。所述框胶可为热固化胶、光固化胶或其组合。所述框胶亦可为透光的环氧树脂或硅胶。在此实施例中，每一第一电极14及每一第二电极15可分别直接或间接电连接于相对应的P电极22及N电极23。\n\n[0050]在一实施例中，可通过在所述驱动基板10的所述驱动电路层13及/或所述第二基板32的第二表面35涂布所述绝缘框胶来贴合所述驱动基板10及所述转移基板30。在此实施例中，每一第一电极14及每一第二电极15通过激光点焊直接电连接于相对应的P电极22及N电极23。\n\n[0051]在一实施例中，可通过在所述驱动基板10的所述驱动电路层13及/或所述第二基板32的第二表面35涂布各向异性导电胶来贴合所述驱动基板10及所述转移基板30。在此实施例中，每一第一电极14及每一第二电极15通过各向异性导电胶分别间接电连接于相对应的P电极22及N电极23，或通过激光点焊直接电连接于相对应的P电极22及N电极23。\n\n[0052]步骤4：请参阅图12及图13，去除所述对位标记33。\n\n[0053]步骤5：请参阅图12及图13，薄化所述第二基板32。在一实施例中，步骤5可与步骤4同时进行。在一实施例中，步骤5可省略。\n\n[0054]步骤5：请参阅图10至图15，切割经贴合的驱动基板10及转移基板30，以获得数个微型发光二极管显示装置100。\n\n[0055]在所述方法中，所述驱动基板10的第一显示区11内无需设置用于转移所述微型发光二极管21至其上的对位标记。\n\n[0056]请参阅图14及图15，本揭示还提供一种通过前述方法制成的微型发光二极管显示装置100。所述微型发光二极管显示装置100包含一含有第一显示区11的驱动基板10及一含有第二显示区31的转移基板30。所述驱动基板10在结构上包含第一基板12及设置在第一基板12上的一驱动电路层13。所述第一显示区11内的驱动电路层13包含数个第一电极14及数个第二电极15。所述转移基板30在结构上包含第二基板32及设置在所述第二显示区31内第二基板32的一表面的数个微型发光二极管21。每一微型发光二极管21包含一P电极22及一N电极23。所述转移基板30贴合于所述驱动基板10。第二显示区31对准第一显示区11。每一微型发光二极管21的P电极22及N电极23分别电连接于相对应的第一电极14及第二电极15。\n\n[0057]第一基板12及第二基板32可为由一玻璃所制成的刚性基板，例如石英玻璃、高硅氧玻璃、硼硅酸玻璃、钠钙玻璃及铝硅酸盐玻璃。第一基板12及第二基板32亦可为由一柔性绝缘聚合物材料所制成的柔性基板，诸如聚酰亚胺、聚碳酸酯、聚醚砜、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯及薄膜纤维增强聚合物。第一基板12的材料及第二基板32的材料可相同或不同。第一基板12及第二基板32可分别为刚性基板及柔性基板，或是分别为柔性基板及刚性基板。第一基板12及第二基板32可为透明的、半透明的或不透明的。\n\n[0058]所述驱动基板10可为用于液晶显示装置中的主动式矩阵基板。所述驱动基板10的驱动电路层13包含数据线、扫描线及主动元件。所述主动元件可为氧化物薄膜晶体管、有机薄膜晶体管、非晶态薄膜晶体管、低温复晶态薄膜晶体管或其组合，但不限于此。所述主动元件可为底栅型、顶栅型或双栅型薄膜晶体管。\n\n[0059]在一实施例中，请参阅图7，微型发光二极管21可为水平式(lateral)微型发光二极管，其包含依序堆叠的N型半导体层24、发光层25、P型半导体层26、透明导电层27及P电极22，以及设置在N型半导体层24上的N电极23。在一实施例中，请参阅图8，微型发光二极管21可为垂直式(vertical)微型发光二极管，其包含依序堆叠的N电极23、N型半导体层24、发光层25、P型半导体层26及P电极22。N型半导体层24、发光层25、P型半导体层26、透明导电层27、P电极22及N电极23的材料如前所述，在此不再详细描述。图7及图8仅为本揭示的微型发光二极管21的示例。本揭示的微型发光二极管21的结构及形状不以图7及图8所示的结构及形状为限。本揭示的微型发光二极管21包含所有含P电极及N电极的微型发光二极管。\n\n[0060]用语「电连接」包含「直接电连接」与「间接电连接」。「直接电连接」是指两元件不通过其他元件或材料而电连接在一起，例如以激光点焊(laser spot welding)方式电连接两元件。「间接电连接」是指两元件之间通过其他元件(例如各向异性导电薄膜)或材料(例如各向异性导电胶)而电连接在一起。\n\n[0061]在一实施例中，在所述驱动基板10的第一显示区11外围及所述转移基板30的第二显示区31外围之间涂布有一绝缘框胶，用以贴合所述驱动基板10及所述转移基板30。所述框胶可为热固化胶、光固化胶或其组合。所述框胶亦可为透光的环氧树脂或硅胶。在此实施例中，每一第一电极14及每一第二电极15可分别直接或间接电连接于相对应的P电极22及N电极23。\n\n[0062]在一实施例中，在所述驱动基板10的所述驱动电路层13及所述第二基板32的第二表面35之间涂布有一绝缘框胶，用以贴合所述驱动基板10及所述转移基板30。在此实施例中，每一第一电极14及每一第二电极15通过激光点焊直接电连接于相对应的P电极22及N电极23。\n\n[0063]在一实施例中，在所述驱动基板10的所述驱动电路层13及所述第二基板32的第二表面35之间涂布有一各向异性导电胶，用以贴合所述驱动基板10及所述转移基板30。在此实施例中，每一第一电极14及每一第二电极15通过所述各向异性导电胶分别间接电连接于相对应的P电极22及N电极23，或通过激光点焊直接电连接于相对应的P电极22及N电极23。\n\n[0064]在所述微型发光二极管显示装置100中，所述驱动基板10的第一显示区11未设有用于转移所述微型发光二极管21至其上的对位标记。\n\n[0065]相较于现有的微型发光二极管显示装置的制造方法，本发明方法通过(1)分别设置对位标记及转移微型发光二极管至第二基板显示区的两相对表面，以形成转移基板；(2)通过对位标记将转移基板贴合于驱动基板，使微型发光二极管的P电极及N电极分别电连接于驱动基板显示区的驱动电路层的第一电极及第二电极；以及(3)去除所述对位标记，来达到下列功效：(1)形成驱动基板的驱动电路层与转移微型发光二极管至第二基板可同步进行，以减少制造所需的时间；以及(2)转移基板显示区的对位标记最终会去除，且无需在驱动基板的显示区设置对位标记，因此不会影响最终制成的微型发光二极管显示装置的显示效果。\n\n[0066]虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本揭示涉及显示技术领域，特别是涉及一种微型发光二极管显示装置及其制造方法。\n\n背景技术\n\n[0002]现有的微型发光二极管(micro light-emitting diode，micro LED)显示装置的制备方法，主要是将micro LED从生长基板直接转移到驱动基板(driving substrate)上，因此需等待驱动基板的驱动电路层形成后再转移微型发光二极管至驱动电路层上。随着科技的发展，micro LED的尺寸越来越小，使得microLED在驱动基板上的间距可越来越小且密度可越来越大。此使micro LED显示装置的像素密度(pixels per inch，PPI)可越来越大。就500PPI的5英寸手机屏幕而言，其包含约800万颗microLED。现有的巨量转移技术一般需要数次的转移，才能转移完一个手机屏幕所需的micro LED数量，因此转移微型发光二极管极为耗时。此外，现有的巨量转移技术在转移前需要先在驱动基板的显示区内设置数个对位标记，以确保转移的精确度。然而，在PPI日益增加的需求下，当对位标记的尺寸大于像素的尺寸时，将会影响显示装置的显示效果。\n\n发明内容\n\n[0003]为了解决现有显示装置中的驱动基板显示区因设有转移微型发光二极管用的对位标记而影响显示效果的技术问题，本揭示提供一种微型发光二极管显示装置的制造方法。所述方法包含：提供含第一显示区的一驱动基板，其中所述驱动基板在结构上包含第一基板及设置在第一基板上的一驱动电路层，且在所述第一显示区内的驱动电路层包含第一电极及第二电极；提供含第二显示区的一转移基板，其中所述转移基板在结构上包含第二基板及分别设置在所述第二显示区内第二基板的两相对表面的一对位标记及一微型发光二极管，其中所述微型发光二极管包含一P电极及一N电极；通过所述对位标记贴合所述驱动基板及所述转移基板，使所述驱动电路层的第一电极及第二电极分别电连接于所述微型发光二极管的P电极及N电极；以及去除所述对位标记。\n\n[0004]在一实施例中，提供所述转移基板包含：提供第二基板；形成所述对位标记于所述第二显示区内第二基板的第一表面；形成所述微型发光二极管于一生长基板；以及将所述微型发光二极管从所述生长基板转移至所述第二显示区内第二基板的第二表面。第一表面与第二表面为第二基板的两相对面。\n\n[0005]在一实施例中，提供所述转移基板还包含：在转移所述微型发光二极管至所述第二基板后，检测所述微型发光二极管的瑕疵；以及当所述微型发光二极管被检测为不良品时，转移另一微型发光二极管，以替换所述微型发光二极管。\n\n[0006]在一实施例中，提供所述驱动基板包含：提供所述第一基板；及形成所述驱动电路层于所述第一基板上。再者，形成所述驱动电路层与转移所述微型发光二极管同步进行。\n\n[0007]在一实施例中，所述方法还包含：在去除所述对位标记的同时，薄化所述第二基板。\n\n[0008]在一实施例中，所述微型发光二极管为水平式(lateral)或垂直式(vertical)微型发光二极管。\n\n[0009]在一实施例中，所述驱动基板的第一显示区未设有用于转移所述微型发光二极管至其上的一对位标记。\n\n[0010]本揭示还提供一种微型发光二极管显示装置，其包含一含有第一显示区的驱动基板及一含有第二显示区的转移基板。所述驱动基板在结构上包含第一基板及设置在第一基板上的一驱动电路层。所述第一显示区内的驱动电路层包含第一电极及第二电极。所述转移基板在结构上包含第二基板及设置在所述第二显示区内第二基板的一表面的一微型发光二极管。所述微型发光二极管包含一P电极及一N电极。所述转移基板贴合于所述驱动基板。第二显示区对准第一显示区。所述微型发光二极管的P电极及N电极分别电连接于所述驱动电路层的第一电极及第二电极。\n\n[0011]在一实施例中，所述微型发光二极管为水平式或垂直式微型发光二极管。\n\n[0012]在一实施例中，所述驱动基板的第一显示区未设有用于转移所述微型发光二极管至其上的一对位标记。\n\n[0013]相较于现有的微型发光二极管显示装置的制造方法，本发明方法通过(1)分别设置对位标记及转移微型发光二极管至第二基板显示区的两相对表面，以形成转移基板；(2)通过对位标记贴合驱动基板及转移基板，使微型发光二极管的P电极及N电极分别电连接于驱动基板显示区的驱动电路层的第一电极及第二电极；以及(3)去除所述对位标记，来达到下列功效：(1)形成驱动基板的驱动电路层与转移微型发光二极管至第二基板可同步进行，以减少制造所需的时间；以及(2)转移基板显示区的对位标记最终会去除，且无需在驱动基板的显示区设置对位标记，因此不会影响最终制成的微型发光二极管显示装置的显示效果。\n\n附图说明\n\n[0014]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0015]图1为本揭示实施例的驱动基板的示意图。\n\n[0016]图2为图1的驱动基板沿A-A’线的剖面示意图。\n\n[0017]图3为本揭示实施例的转移基板的示意图。\n\n[0018]图4为图3的转移基板沿B-B’线的剖面示意图。\n\n[0019]图5为图4的第二基板与对位标记的示意图。\n\n[0020]图6为本揭示实施例的形成有微型发光二极管的生长基板的剖面示意图。\n\n[0021]图7为图4的微型发光二极管具有水平结构的示意图。\n\n[0022]图8为图4的微型发光二极管具有垂直结构的第二种示意图。\n\n[0023]图9为图1的驱动基板与图3的转移基板相对的示意图。\n\n[0024]图10为图1的驱动基板与图3的转移基板贴合的示意图。\n\n[0025]图11为图10中经贴合后的驱动基板及转移基板的正视图。\n\n[0026]图12为图11中经贴合后的驱动基板及转移基板沿C-C’线的剖面示意图。\n\n[0027]图13为图12的对位标记经去除且第二基板经薄化的示意图。\n\n[0028]图14为本揭示实施例的微型发光二极管显示装置的示意图。\n\n[0029]图15为图14的微型发光二极管显示装置的剖面示意图。\n\n具体实施方式\n\n[0030]本揭示提供一种微型发光二极管显示装置的制造方法，其包含下列步骤。\n\n[0031]步骤1：请参阅图1及图2，提供一驱动基板10。所述驱动基板10包含数个以阵列排列的第一显示区11。所述驱动基板10在结构上包含第一基板12及设置在第一基板12上的一驱动电路层13。在每一第一显示区11内的驱动电路层13包含数个第一电极14及数个第二电极15。\n\n[0032]具体地，步骤1的提供所述驱动基板10包含步骤11及步骤12。\n\n[0033]步骤11：提供所述第一基板12。第一基板12可为由一玻璃所制成的刚性基板，例如石英玻璃、高硅氧玻璃(high-silica glass)、硼硅酸玻璃(borosilicate glass)、钠钙玻璃(soda-lime glass)及铝硅酸盐玻璃(aluminosilicate glass)。第一基板12亦可为由一柔性绝缘聚合物材料所制成的柔性基板，诸如聚酰亚胺(polyimide，PI)、聚碳酸酯(polycarbonate，PC)、聚醚砜(polyether sulfone，PES)、聚对苯二甲酸乙二醇酯(polyethylene terephthalate，PET)、聚萘二甲酸乙二醇酯(polyethylene naphthalate，PEN)、及薄膜纤维增强聚合物(fiber-reinforced polymer，FRP)。第一基板12可为透明的、半透明的或不透明的。\n\n[0034]步骤12：形成所述驱动电路层13于所述第一基板11上，以得到所述驱动基板10。驱动基板10可为用于液晶显示装置中的主动式矩阵基板(active matrix substrate)。所述驱动电路层13包含数据线、扫描线及主动元件。所述主动元件可为氧化物薄膜晶体管(诸如铟镓锌氧化物(indium gallium zinc oxide，IGZO)薄膜晶体管)、有机薄膜晶体管(Organic TFTs，OTFT)、非晶态薄膜晶体管(hydrogenated amorphous TFTs，简称a-TFT:H)、低温复晶态薄膜晶体管(low temperature poly TFTs，简称LTPS)或其组合，但不限于此。所述主动元件可为底栅型、顶栅型或双栅型薄膜晶体管。\n\n[0035]步骤2：请参阅图3及图4，提供一转移基板30。所述转移基板30包含数个以阵列排列的第二显示区31。所述转移基板30在结构上包含第二基板32及分别设置在每一第二显示区31内第二基板32的两相对表面的数个对位标记33及数个微型发光二极管21。每一微型发光二极管21包含一P电极22及一N电极23。\n\n[0036]具体地，步骤2的提供所述转移基板30包含包含步骤21至步骤25。\n\n[0037]步骤21：请参阅图5，提供第二基板32。第二基板32可为由一玻璃所制成的刚性基板，例如石英玻璃、高硅氧玻璃、硼硅酸玻璃、钠钙玻璃及铝硅酸盐玻璃。第二基板32亦可为由一柔性绝缘聚合物材料所制成的柔性基板，诸如聚酰亚胺、聚碳酸酯、聚醚砜、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯及薄膜纤维增强聚合物。第二基板32可为透明的、半透明的或不透明的。第二基板32的材料可与第一基板12的材料相同或不同。\n\n[0038]步骤22：请参阅图5，形成所述数个对位标记33于每一第二显示区31内第二基板32的第一表面34。\n\n[0039]步骤23：请参阅图6，形成所述数个微型发光二极管21于一生长基板20。所述数个微型发光二极管21可包含蓝光微型发光二极管、红光微型发光二极管、绿光微型发光二极管或其组合，但不限于此。\n\n[0040]步骤24：请参阅图4至图6，将所述数个微型发光二极管21从所述生长基板20转移至每一第二显示区31内的第二基板32的第二表面35。第一表面34与第二表面35为第二基板32的两相对面。\n\n[0041]步骤25：检测所述数个微型发光二极管21是否有瑕疵。当所述微型发光二极管21被检测为不良品时，转移另一微型发光二极管21，以替换所述微型发光二极管21。\n\n[0042]在一实施例中，步骤1的提供所述驱动基板10与步骤2的提供所述转移基板30，同步进行。在一实施例中，步骤12的形成所述驱动电路层13于所述第一基板11上与步骤24的转移所述微型发光二极管21至第二基板32上，同步进行。\n\n[0043]在一实施例中，请参阅图7，微型发光二极管21可为水平式(lateral)微型发光二极管，其包含N型半导体层24、发光层25、P型半导体层26、透明导电层27、P电极22及N电极23。在此实施例中，请参阅图6及图7，步骤23的形成所述数个微型发光二极管21于一生长基板20包含：在所述生长基板20上依序形成N型半导体层24、发光层25、P型半导体层26、透明导电层27及P电极22；图案化P电极22；蚀刻发光层25、P型半导体层26及透明导电层27，以曝露出N型半导体层24的一部分；以及在经曝露的N型半导体层24上形成N电极23。\n\n[0044]在一实施例中，请参阅图8，微型发光二极管21可为垂直式(vertical)微型发光二极管，其包含N电极23、N型半导体层24、发光层25、P型半导体层26及P电极22。在此实施例中，步骤23的形成所述数个微型发光二极管21于一生长基板20包含：在所述生长基板20上依序形成N电极23、N型半导体层24、发光层25、P型半导体层26及P电极22。垂直式(vertical)微型发光二极管的制程为习知技术，因此不再作详细描述。\n\n[0045]图7及图8仅为本揭示的微型发光二极管21的示例。本揭示的微型发光二极管21的结构及形状不以图7及图8所示的结构及形状为限。本揭示的微型发光二极管21包含所有含P电极及N电极的微型发光二极管。因此，步骤23的形成所述数个微型发光二极管21于一生长基板20，不限于前述以图7及图8的微型发光二极管21为例所做的说明。\n\n[0046]请参阅图7及图8，N型半导体层24可由N型氮化物所制成，诸如经硅(Si)掺杂的氮化镓(GaN)，但不限于此。发光层25可为由氮化铟镓(InGaN)及氮化镓(GaN)制成的单量子阱(single quantum well，SQW)或多量子阱(multi-quantum well，MQW)，但不限于此。P型半导体层26可由P型氮化物所制成，诸如经镁(Mg)掺杂的氮化镓，但不限于此。透明导电层27可由一金属氧化物所制成，例如氧化铟、氧化锌、氧化钛、氧化镁或氧化铟锡(Indium TinOxide，ITO)，但不限于此。P电极22及N电极23的材料可为金(Au)、镍(Ni)、银(Ag)、铜(Cu)、铂(Pt)、铬(Cr)、锌(Zn)、钯(Pd)、铝(Al)、钛(Ti)或其合金，例如镍金合金、钯金合金、金锌合金，但不限于此。P电极22及N电极23的材料亦可为一金属氧化物，例如氧化铟、氧化锌、氧化钛、氧化镁及氧化铟锡。P电极22及N电极23亦可为具有多层结构的复合电极，例如Cr/Pt/Au、Cr/Al/Pt/Au、Ti/Al/Ti/Au、Ti/Al/Ti/Pt/Au、Ti/Al/Pt/Au。N型半导体层24、发光层25及P型半导体层26可通过金属有机化学气相沉积(Metal-organic Chemical VaporDeposition，MOCVD)或金属有机物理气相沉积(Metal-organic physical VaporDeposition，MOPVD)制成，但不限于此。P电极22、N电极23及透明导电层27可通过物理气相沉积制成，但不限于此。\n\n[0047]步骤3：请参阅图9至图12，通过所述数个对位标记33贴合所述驱动基板10及所述转移基板30，使每一第一显示区11对准相对应的第二显示区31，且每一第一电极14及每一第二电极15分别对准并电连接于相对应的P电极22及N电极23。在一实施例中，如图9至图12所示，将所述转移基板30移至所述驱动基板10的上方。接着，通过所述对位标记33使每一第二显示区31对准相对应的第一显示区11，且每一微型发光二极管21的P电极22及N电极23分别对准相对应的第一电极14及第二电极15。最后，将所述驱动基板10贴合于所述转移基板30，且将每一微型发光二极管21的P电极22及N电极23分别电连接于相对应的第一电极14及第二电极15。在一实施例中，所述驱动基板10可移至所述转移基板30的上方。接着，通过所述对位标记33，使每一第一显示区11对准相对应的第二显示区31，且每一第一电极14及每一第二电极15分别对准相对应的P电极22及N电极23。最后，将所述转移基板30贴合于所述驱动基板10，且将每一第一电极14及每一第二电极15分别电连接于相对应的P电极22及N电极23。\n\n[0048]用语「电连接」包含「直接电连接」与「间接电连接」。「直接电连接」是指两元件不通过其他元件或材料而电连接在一起，例如以激光点焊(laser spot welding)方式电连接两元件。「间接电连接」是指两元件之间通过其他元件(例如各向异性导电薄膜(anisotropicconductive film，ACF))或材料(例如各向异性导电胶(anisotropic conductive paste，ACP))而电连接在一起。\n\n[0049]在一实施例中，可通过在所述驱动基板10的每一第一显示区11外围及/或所述转移基板30的每一第二显示区31外围涂布一绝缘框胶来贴合所述驱动基板10及所述转移基板30。所述框胶可为热固化胶、光固化胶或其组合。所述框胶亦可为透光的环氧树脂或硅胶。在此实施例中，每一第一电极14及每一第二电极15可分别直接或间接电连接于相对应的P电极22及N电极23。\n\n[0050]在一实施例中，可通过在所述驱动基板10的所述驱动电路层13及/或所述第二基板32的第二表面35涂布所述绝缘框胶来贴合所述驱动基板10及所述转移基板30。在此实施例中，每一第一电极14及每一第二电极15通过激光点焊直接电连接于相对应的P电极22及N电极23。\n\n[0051]在一实施例中，可通过在所述驱动基板10的所述驱动电路层13及/或所述第二基板32的第二表面35涂布各向异性导电胶来贴合所述驱动基板10及所述转移基板30。在此实施例中，每一第一电极14及每一第二电极15通过各向异性导电胶分别间接电连接于相对应的P电极22及N电极23，或通过激光点焊直接电连接于相对应的P电极22及N电极23。\n\n[0052]步骤4：请参阅图12及图13，去除所述对位标记33。\n\n[0053]步骤5：请参阅图12及图13，薄化所述第二基板32。在一实施例中，步骤5可与步骤4同时进行。在一实施例中，步骤5可省略。\n\n[0054]步骤5：请参阅图10至图15，切割经贴合的驱动基板10及转移基板30，以获得数个微型发光二极管显示装置100。\n\n[0055]在所述方法中，所述驱动基板10的第一显示区11内无需设置用于转移所述微型发光二极管21至其上的对位标记。\n\n[0056]请参阅图14及图15，本揭示还提供一种通过前述方法制成的微型发光二极管显示装置100。所述微型发光二极管显示装置100包含一含有第一显示区11的驱动基板10及一含有第二显示区31的转移基板30。所述驱动基板10在结构上包含第一基板12及设置在第一基板12上的一驱动电路层13。所述第一显示区11内的驱动电路层13包含数个第一电极14及数个第二电极15。所述转移基板30在结构上包含第二基板32及设置在所述第二显示区31内第二基板32的一表面的数个微型发光二极管21。每一微型发光二极管21包含一P电极22及一N电极23。所述转移基板30贴合于所述驱动基板10。第二显示区31对准第一显示区11。每一微型发光二极管21的P电极22及N电极23分别电连接于相对应的第一电极14及第二电极15。\n\n[0057]第一基板12及第二基板32可为由一玻璃所制成的刚性基板，例如石英玻璃、高硅氧玻璃、硼硅酸玻璃、钠钙玻璃及铝硅酸盐玻璃。第一基板12及第二基板32亦可为由一柔性绝缘聚合物材料所制成的柔性基板，诸如聚酰亚胺、聚碳酸酯、聚醚砜、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯及薄膜纤维增强聚合物。第一基板12的材料及第二基板32的材料可相同或不同。第一基板12及第二基板32可分别为刚性基板及柔性基板，或是分别为柔性基板及刚性基板。第一基板12及第二基板32可为透明的、半透明的或不透明的。\n\n[0058]所述驱动基板10可为用于液晶显示装置中的主动式矩阵基板。所述驱动基板10的驱动电路层13包含数据线、扫描线及主动元件。所述主动元件可为氧化物薄膜晶体管、有机薄膜晶体管、非晶态薄膜晶体管、低温复晶态薄膜晶体管或其组合，但不限于此。所述主动元件可为底栅型、顶栅型或双栅型薄膜晶体管。\n\n[0059]在一实施例中，请参阅图7，微型发光二极管21可为水平式(lateral)微型发光二极管，其包含依序堆叠的N型半导体层24、发光层25、P型半导体层26、透明导电层27及P电极22，以及设置在N型半导体层24上的N电极23。在一实施例中，请参阅图8，微型发光二极管21可为垂直式(vertical)微型发光二极管，其包含依序堆叠的N电极23、N型半导体层24、发光层25、P型半导体层26及P电极22。N型半导体层24、发光层25、P型半导体层26、透明导电层27、P电极22及N电极23的材料如前所述，在此不再详细描述。图7及图8仅为本揭示的微型发光二极管21的示例。本揭示的微型发光二极管21的结构及形状不以图7及图8所示的结构及形状为限。本揭示的微型发光二极管21包含所有含P电极及N电极的微型发光二极管。\n\n[0060]用语「电连接」包含「直接电连接」与「间接电连接」。「直接电连接」是指两元件不通过其他元件或材料而电连接在一起，例如以激光点焊(laser spot welding)方式电连接两元件。「间接电连接」是指两元件之间通过其他元件(例如各向异性导电薄膜)或材料(例如各向异性导电胶)而电连接在一起。\n\n[0061]在一实施例中，在所述驱动基板10的第一显示区11外围及所述转移基板30的第二显示区31外围之间涂布有一绝缘框胶，用以贴合所述驱动基板10及所述转移基板30。所述框胶可为热固化胶、光固化胶或其组合。所述框胶亦可为透光的环氧树脂或硅胶。在此实施例中，每一第一电极14及每一第二电极15可分别直接或间接电连接于相对应的P电极22及N电极23。\n\n[0062]在一实施例中，在所述驱动基板10的所述驱动电路层13及所述第二基板32的第二表面35之间涂布有一绝缘框胶，用以贴合所述驱动基板10及所述转移基板30。在此实施例中，每一第一电极14及每一第二电极15通过激光点焊直接电连接于相对应的P电极22及N电极23。\n\n[0063]在一实施例中，在所述驱动基板10的所述驱动电路层13及所述第二基板32的第二表面35之间涂布有一各向异性导电胶，用以贴合所述驱动基板10及所述转移基板30。在此实施例中，每一第一电极14及每一第二电极15通过所述各向异性导电胶分别间接电连接于相对应的P电极22及N电极23，或通过激光点焊直接电连接于相对应的P电极22及N电极23。\n\n[0064]在所述微型发光二极管显示装置100中，所述驱动基板10的第一显示区11未设有用于转移所述微型发光二极管21至其上的对位标记。\n\n[0065]相较于现有的微型发光二极管显示装置的制造方法，本发明方法通过(1)分别设置对位标记及转移微型发光二极管至第二基板显示区的两相对表面，以形成转移基板；(2)通过对位标记将转移基板贴合于驱动基板，使微型发光二极管的P电极及N电极分别电连接于驱动基板显示区的驱动电路层的第一电极及第二电极；以及(3)去除所述对位标记，来达到下列功效：(1)形成驱动基板的驱动电路层与转移微型发光二极管至第二基板可同步进行，以减少制造所需的时间；以及(2)转移基板显示区的对位标记最终会去除，且无需在驱动基板的显示区设置对位标记，因此不会影响最终制成的微型发光二极管显示装置的显示效果。\n\n[0066]虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10806, 23860, '技术领域\n\n[0001]本申请涉及显示领域，特别是涉及一种micro LED巨量转移装置及其转移方法。\n\n背景技术\n\n[0002]微型发光二极管(Micro light emitting diode，Micro LED)通常是指在传统Micro LED芯片结构基础上，将Micro LED芯片尺寸规格缩小到200微米以内的尺寸，将红、绿、蓝三色Micro LED按照一定的规则排列在薄膜晶体管(TFT，Thin Film Transistor)或互补金属氧化物半导体(Complementary Metal Oxide Semiconductor，COMS)上，则形成了能够实现全彩显示的微器件。此种显示器具有独立控制的显示画素，具有独立发光控制、高辉度、低耗电、超高分辨率、超高色彩饱和度以及Micro LED微显示器件具有自发光的技术特点，还可以实现柔性、透明显示等，而其耗电量仅约为液晶面板的10％，且封装要求低，更容易实现柔性及无缝拼接显示，是未来极具有发展潜力的未来显示器。\n\n[0003]Micro LED应用于大尺寸显示面板时需要进行去掉LED的蓝宝石基板或GaAs基板，由于Micro LED的集成度较高，过于密集的Micro LED设置导致Micro LED的利用率不高，造成浪费，因此，实际使用时需要通过巨量转移将Micro LED转移至稀疏排列的驱动电路板上，由于Micro LED的体积较小，现有的巨量选择性转移装置及方法的效率和良率均较低。\n\n[0004]因此，现有的微型发光二极管巨量转移技术中，还存在着的微型发光二极管的micro LED巨量转移装置及方法的效率和良率均较低的问题，急需改进。\n\n发明内容\n\n[0005]本申请涉及一种micro LED巨量转移装置及其转移方法，用于解决现有技术中存在着微型发光二极管的micro LED巨量转移装置及方法的效率和良率均较低的问题。\n\n[0006]为解决上述问题，本申请提供的技术方案如下：\n\n[0007]本申请提供的一种micro LED巨量转移装置，所述micro LED巨量转移装置包括：光照模块、转移模块、清洗模块以及干燥模块；\n\n[0008]所述光照模块设置在整个装置的最上面，所述光照模块内设置有掩膜版；\n\n[0009]所述转移模块设置在所述光照模块的下方，所述转移模块内包括：蓝宝石基板、micro LED芯片、传送带以及载板，待转移的所述micro LED芯片正对于所述掩膜版的开口处设置；\n\n[0010]所述清洗模块包括：传送带、清洗溶液和清洗喷头；\n\n[0011]所述干燥模块包括：传送带和干燥源。\n\n[0012]在本申请的一些实施例中，所述传送带由抗拉伸基板以及设置在所述抗拉伸基材一侧的粘胶层组成，所述粘胶层正对于所述micro LED芯片一侧设置。\n\n[0013]在本申请的一些实施例中，所述掩膜版上设置有多个开口。\n\n[0014]在本申请的一些实施例中，所述micro LED巨量转移装置还包括至少两个辊轮，所述辊轮带动所述传送带进行运动。\n\n[0015]在本申请的一些实施例中，所述转移模块内的传送带为第一传送带，所述清洗模块内的传送带为第二传送带，所述干燥模块内的传送带为第三传送带，所述第一传送带由第一辊轮和第二辊轮驱动，所述第二传送带由第二辊轮和第三辊轮驱动，所述第三传送带由第三辊轮和第四辊轮驱动。\n\n[0016]在本申请的一些实施例中，所述第一辊轮、所述第二辊轮、所述第三辊轮和所述第四辊轮的材质相同；所述第二辊轮与所述第三辊轮的半径相等，且所述第二辊轮与所述第三辊轮的轴心位于同一水平线上。\n\n[0017]在本申请的一些实施例中，所述光照模块采用具有一定预设激光波长的固体激光器。\n\n[0018]在本申请的一些实施例中，所述固体激光器的预设激光波长长度为：266nm。\n\n[0019]在本申请的一些实施例中，所述清洗溶液为盐酸溶液。\n\n[0020]本申请还提供一种micro LED巨量转移方法，采用上述所述的micro LED巨量转移装置，该方法包括下述步骤：\n\n[0021]S10，透过掩膜版采用固体激光器照射蓝宝石基板；\n\n[0022]S20，脱落的micro LED芯片粘在传送带上，被所述传送带运输至清洗模块；\n\n[0023]S30，清洗喷头喷出清洗溶液对所述清洗模块内的所述micro LED芯片进行清洗，洗去所述micro LED芯片上的Ga以及Ga的氧化物，再将所述micro LED芯片运送至干燥模块；\n\n[0024]S40，利用干燥源对所述干燥模块内的所述micro LED芯片进行干燥。\n\n[0025]与现有技术相比，本申请提供的一种micro LED巨量转移装置及其转移方法的有益效果为：\n\n[0026]1.本申请提供的micro LED巨量转移装置，包括：光照模块、转移模块、清洗模块以及干燥模块，所述光照模块设置在整个装置的最上面，所述光照模块内设置有掩膜版；所述转移模块设置在所述光照模块的下方，所述转移模块内包括：蓝宝石基板、micro LED芯片、传送带以及载板，待转移的所述micro LED芯片正对于所述掩膜版的开口处设置；所述清洗模块包括：传送带、清洗溶液和清洗喷头；所述干燥模块包括：传送和干燥源；需要转移时，将掩膜版的开口处正对于待转移的所述micro LED芯片，可以一次性转移多个micro LED芯片，即实现micro LED芯片的巨量转移，提升了micro LED的转移效率；\n\n[0027]2.本申请提供的micro LED巨量转移装置，所述传送带由抗拉伸基板以及设置在所述抗拉伸基材一侧的粘胶层组成，由于所述传送带上设置有粘胶层，可以直接将所述micro LED芯片粘在传送带上，保证了所述micro LED芯片稳定的粘在所述传送带上并进行后续的清洗和干燥，减少了与所述micro LED芯片接触的次数，提高了micro LED巨量转移的良率。\n\n附图说明\n\n[0028]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0029]图1为本申请实施例提供的micro LED巨量转移装置的结构示意图。\n\n[0030]图2为本申请实施例提供的micro LED的结构示意图。\n\n[0031]图3为本申请实施例提供的粘着有被转移的所述micro LED芯片的传送带的俯视图。\n\n[0032]图4为本申请实施例提供的传送带的横截面示意图。\n\n[0033]图5为本申请实施例提供的micro LED巨量转移方法的流程示意图。\n\n具体实施方式\n\n[0034]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0035]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0036]本申请提供一种micro LED巨量转移装置及其转移方法，具体参阅图1-图5。\n\n[0037]由于现有的Micro LED应用于大尺寸显示面板时需要进行去掉LED的蓝宝石基板或GaAs基板，由于Micro LED的集成度较高，过于密集的Micro LED设置导致Micro LED的利用率不高，造成浪费，因此，实际使用时需要通过巨量转移将Micro LED转移至稀疏排列的驱动电路板上，由于Micro LED的体积较小，现有的巨量选择性转移装置及方法的效率和良率均较低。因此，本申请提供一种micro LED巨量转移装置及方法用以解决上述问题。\n\n[0038]参阅图1，为本申请提供的一种micro LED巨量转移装置的结构示意图，所述microLED巨量转移装置包括：光照模块1、转移模块2、清洗模块3以及干燥模块4；\n\n[0039]所述光照模块1设置在整个装置的最上面，所述光照模块1内设置有掩膜版12；在进行光照时，激光通过所述掩膜版12的开口照射到所述蓝宝石基板21上，将蓝宝石基板21中的GaN缓冲层212的分解为Ga和氮气N2，使得所述micro LED芯片22与所述蓝宝石衬底211分离，进而所述micro LED芯片22可以脱落到所述传送带24上；\n\n[0040]所述转移模块2设置在所述光照模块1的下方，所述转移模块2内包括：蓝宝石基板21、micro LED芯片22、传送带24以及载板25，待转移的所述micro LED芯片22正对于所述掩膜版12的开口处设置；所述掩膜版12上设置有多个开口处，将所述掩膜版12的开口处正对于待转移的所述micro LED芯片22，经激光照射后，待转移的所述micro LED芯片22即可直接脱落到所述传送带24上，实现所述micro LED芯片22的转移；\n\n[0041]所述清洗模块3包括：传送带33、清洗溶液32和清洗喷头31；在激光照射的过程中，所述micro LED芯片22可能有部分区域还残留有GaN缓冲层212中的Ga金属未脱落，或是与空气中的水氧发生反应，变成氧化镓等，会影响到所述micro LED芯片22的出光效果，因此，在对所述micro LED芯片22进行转移之后，还需要对所述micro LED芯片22上残留的镓金属及其氧化物进行清洗，以减小镓及其氧化物对所述micro LED芯片22发光效率的影响；\n\n[0042]所述干燥模块4包括：传送带42和干燥源41，用于对清洗后的所述micro LED芯片22进行清洗，避免清洗模块3中的清洗溶液残留在所述micro LED芯片22上，对所述microLED芯片22造成过度腐蚀，影响所述micro LED芯片22的良率。\n\n[0043]进一步地，参阅图2，所述蓝宝石基板21包括：蓝宝石衬底211和GaN缓冲层212，所述micro LED芯片22由N电极2211、N型GaN2212、N型限制层2213、MQWs多量子发光层2214、P型限制层2215、P型GaN2216以及P电极2217组成；根据发光层的颜色的不同，所述micro LED芯片22可以分为：红色micro LED芯片221、绿色micro LED芯片222以及蓝色micro LED芯片223，所述红色micro LED芯片221发出红光，所述绿色micro LED芯片222发出绿光，所述蓝色micro LED芯片223发出蓝光。\n\n[0044]参阅图4，在本申请的一些实施例中，所述传送带24由抗拉伸基板241以及设置在所述抗拉伸基材一侧的粘胶层242组成，所述抗拉伸基板241可卷曲，耐拉伸；所述粘胶层242正对于所述micro LED芯片22一侧设置，这样当所述micro LED芯片22倍激光照射脱落后，可以直接脱落在所述传送带24上，无需人为干预即可稳定运输，且所述micro LED芯片22的表面也不会受到挤压，提高了所述micro LED芯片22的良率。\n\n[0045]在本申请的一些实施例中，所述掩膜12上设置有多个开口，每个所述掩膜版12的开口处的开口大小和形状与每个所述micro LED芯片22的大小和形状相同，多个所述掩膜版的开口即一次光照可以照射多个待转移的所述micro LED芯片22，即实现多个所述microLED芯片22的转移。参阅图3，为粘着有被转移的所述micro LED芯片22的传送带的俯视图，所述传送带上粘着有多个所述红色micro LED芯片221、多个所述绿色micro LED芯片222以及多个所述蓝色micro LED芯片223。\n\n[0046]在本申请的一些实施例中，所述micro LED巨量转移装置还包括至少两个辊轮，所述辊轮带动所述传送带进行运动。\n\n[0047]进一步地，所述转移模块2内的传送带为第一传送带24，所述清洗模块3内的传送带为第二传送带33，所述干燥模块4内的传送带为第三传送带42，所述第一传送带24由第一辊轮23和第二辊轮34驱动，所述第二传送带33由第二辊轮34和第三辊轮35驱动，所述第三传送带42由第三辊轮35和第四辊轮43驱动。所述第一传送带24、所述第二传送带33和所述第三传送带42采用的材质、宽度和形状均相同，即为同一条传送带的其中一段传送带，每次传送时，从所述第一辊轮23处输出，至所述第四辊轮43处卷入，以完成对所述micro LED芯片22的转移、清洗和干燥。\n\n[0048]进一步地，所述第一辊轮23、所述第二辊轮34、所述第三辊轮35和所述第四辊轮43的材质相同，且形状均为圆柱形；由于所述第二辊轮34与所述第三辊轮35位于所述清洗模块3，为保证所述micro LED芯片22在进行清洗时，清洗溶液与靠近所述蓝宝石衬底一侧的所述micro LED芯片22的表面进行充分的反应，彻底清洗掉残留在所述micro LED芯片22靠近所述蓝宝石衬底一侧表面的镓金属及其氧化物，将所述第二辊轮34与所述第三辊轮35的半径设置得相等，且所述第二辊轮34与所述第三辊轮35的轴心位于同一水平线上，使得所述micro LED芯片22可以在所述第二传送带33上沿水平方向平稳运行。\n\n[0049]在本申请的一些实施例中，所述光照模块采用具有一定预设激光波长的固体激光器11；进一步地，所述固体激光器11的预设激光波长长度为：266nm，即在进行光照时，所述固体激光器11开始工作，稳定的发出266nm波长的激光对所述蓝宝石基板进行照射，使得所述蓝宝石基板上的GaN缓冲层分解，进而将所述micro LED芯片22与所述蓝宝石衬底剥离掉。\n\n[0050]在本申请的一些实施例中，所述清洗溶液为盐酸溶液，即所述盐酸溶液与镓金属及其氧化物进行反应，使得所述micro LED芯片22表面的镓金属及其氧化物被腐蚀掉。\n\n[0051]参阅图5，本申请还提供一种micro LED巨量转移方法，采用上述所述的micro LED巨量转移装置，该方法包括下述步骤：\n\n[0052]S10，透过掩膜版采用固体激光器照射蓝宝石基板；使得待转移的所述micro LED芯片正对于所述掩膜版的开口处，激光可以使得待转移的所述micro LED芯片22单独被剥离掉，节约成本，也提高了转移的效率；\n\n[0053]S20，脱落的micro LED芯片粘在传送带上，被所述传送带运输至清洗模块；被激光照射一段时间后，待转移的所述micro LED芯片上方的GaN缓冲层在激光的照射下，被分解成Ga和氮气，无法再将所述micro LED芯片与所述蓝宝石衬底黏在一起，所述micro LED芯片即脱落到所述传送带上，由于所述传送带上设置有粘胶层，使得所述micro LED芯片马上被黏在所述传送带上，随所述传送带运输至下一个模块；\n\n[0054]S30，清洗喷头喷出清洗溶液对所述清洗模块内的所述micro LED芯片进行清洗，洗去所述micro LED芯片上的Ga以及Ga的氧化物，再将所述micro LED芯片运送至干燥模块；将所述micro LED芯片表面残留的镓金属及其氧化物用盐酸溶液腐蚀掉，防止镓金属及其氧化物对所述micro LED芯片发光效率的影响；\n\n[0055]S40，利用干燥源对所述干燥模块内的所述micro LED芯片进行干燥，防止所述micro LED芯片表面残留有盐酸溶液，避免所述盐酸溶液对所述micro LED芯片的过度腐蚀，进而影响了所述micro LED芯片的良率。\n\n[0056]因此，本申请提供的一种micro LED巨量转移装置及其转移方法的有益效果为：首先，本申请提供的micro LED巨量转移装置，包括：光照模块、转移模块、清洗模块以及干燥模块，所述光照模块设置在整个装置的最上面，所述光照模块内设置有掩膜版；所述转移模块设置在所述光照模块的下方，所述转移模块内包括：蓝宝石基板、micro LED芯片、传送带以及载板，待转移的所述micro LED芯片正对于所述掩膜版的开口处设置；所述清洗模块包括：传送带、清洗溶液和清洗喷头；所述干燥模块包括：传送和干燥源；需要转移时，将掩膜版的开口处正对于待转移的所述micro LED芯片，可以一次性转移多个micro LED芯片，即实现micro LED芯片的巨量转移，提升了micro LED的转移效率；其次，本申请提供的microLED巨量转移装置，所述传送带由抗拉伸基板以及设置在所述抗拉伸基材一侧的粘胶层组成，由于所述传送带上设置有粘胶层，可以直接将所述micro LED芯片粘在传送带上，保证了所述micro LED芯片稳定的粘在所述传送带上并进行后续的清洗和干燥，减少了与所述micro LED芯片接触的次数，提高了micro LED巨量转移的良率。\n\n[0057]以上对本申请实施例所提供的一种micro LED巨量转移装置及其转移方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示领域，特别是涉及一种micro LED巨量转移装置及其转移方法。\n\n背景技术\n\n[0002]微型发光二极管(Micro light emitting diode，Micro LED)通常是指在传统Micro LED芯片结构基础上，将Micro LED芯片尺寸规格缩小到200微米以内的尺寸，将红、绿、蓝三色Micro LED按照一定的规则排列在薄膜晶体管(TFT，Thin Film Transistor)或互补金属氧化物半导体(Complementary Metal Oxide Semiconductor，COMS)上，则形成了能够实现全彩显示的微器件。此种显示器具有独立控制的显示画素，具有独立发光控制、高辉度、低耗电、超高分辨率、超高色彩饱和度以及Micro LED微显示器件具有自发光的技术特点，还可以实现柔性、透明显示等，而其耗电量仅约为液晶面板的10％，且封装要求低，更容易实现柔性及无缝拼接显示，是未来极具有发展潜力的未来显示器。\n\n[0003]Micro LED应用于大尺寸显示面板时需要进行去掉LED的蓝宝石基板或GaAs基板，由于Micro LED的集成度较高，过于密集的Micro LED设置导致Micro LED的利用率不高，造成浪费，因此，实际使用时需要通过巨量转移将Micro LED转移至稀疏排列的驱动电路板上，由于Micro LED的体积较小，现有的巨量选择性转移装置及方法的效率和良率均较低。\n\n[0004]因此，现有的微型发光二极管巨量转移技术中，还存在着的微型发光二极管的micro LED巨量转移装置及方法的效率和良率均较低的问题，急需改进。\n\n发明内容\n\n[0005]本申请涉及一种micro LED巨量转移装置及其转移方法，用于解决现有技术中存在着微型发光二极管的micro LED巨量转移装置及方法的效率和良率均较低的问题。\n\n[0006]为解决上述问题，本申请提供的技术方案如下：\n\n[0007]本申请提供的一种micro LED巨量转移装置，所述micro LED巨量转移装置包括：光照模块、转移模块、清洗模块以及干燥模块；\n\n[0008]所述光照模块设置在整个装置的最上面，所述光照模块内设置有掩膜版；\n\n[0009]所述转移模块设置在所述光照模块的下方，所述转移模块内包括：蓝宝石基板、micro LED芯片、传送带以及载板，待转移的所述micro LED芯片正对于所述掩膜版的开口处设置；\n\n[0010]所述清洗模块包括：传送带、清洗溶液和清洗喷头；\n\n[0011]所述干燥模块包括：传送带和干燥源。\n\n[0012]在本申请的一些实施例中，所述传送带由抗拉伸基板以及设置在所述抗拉伸基材一侧的粘胶层组成，所述粘胶层正对于所述micro LED芯片一侧设置。\n\n[0013]在本申请的一些实施例中，所述掩膜版上设置有多个开口。\n\n[0014]在本申请的一些实施例中，所述micro LED巨量转移装置还包括至少两个辊轮，所述辊轮带动所述传送带进行运动。\n\n[0015]在本申请的一些实施例中，所述转移模块内的传送带为第一传送带，所述清洗模块内的传送带为第二传送带，所述干燥模块内的传送带为第三传送带，所述第一传送带由第一辊轮和第二辊轮驱动，所述第二传送带由第二辊轮和第三辊轮驱动，所述第三传送带由第三辊轮和第四辊轮驱动。\n\n[0016]在本申请的一些实施例中，所述第一辊轮、所述第二辊轮、所述第三辊轮和所述第四辊轮的材质相同；所述第二辊轮与所述第三辊轮的半径相等，且所述第二辊轮与所述第三辊轮的轴心位于同一水平线上。\n\n[0017]在本申请的一些实施例中，所述光照模块采用具有一定预设激光波长的固体激光器。\n\n[0018]在本申请的一些实施例中，所述固体激光器的预设激光波长长度为：266nm。\n\n[0019]在本申请的一些实施例中，所述清洗溶液为盐酸溶液。\n\n[0020]本申请还提供一种micro LED巨量转移方法，采用上述所述的micro LED巨量转移装置，该方法包括下述步骤：\n\n[0021]S10，透过掩膜版采用固体激光器照射蓝宝石基板；\n\n[0022]S20，脱落的micro LED芯片粘在传送带上，被所述传送带运输至清洗模块；\n\n[0023]S30，清洗喷头喷出清洗溶液对所述清洗模块内的所述micro LED芯片进行清洗，洗去所述micro LED芯片上的Ga以及Ga的氧化物，再将所述micro LED芯片运送至干燥模块；\n\n[0024]S40，利用干燥源对所述干燥模块内的所述micro LED芯片进行干燥。\n\n[0025]与现有技术相比，本申请提供的一种micro LED巨量转移装置及其转移方法的有益效果为：\n\n[0026]1.本申请提供的micro LED巨量转移装置，包括：光照模块、转移模块、清洗模块以及干燥模块，所述光照模块设置在整个装置的最上面，所述光照模块内设置有掩膜版；所述转移模块设置在所述光照模块的下方，所述转移模块内包括：蓝宝石基板、micro LED芯片、传送带以及载板，待转移的所述micro LED芯片正对于所述掩膜版的开口处设置；所述清洗模块包括：传送带、清洗溶液和清洗喷头；所述干燥模块包括：传送和干燥源；需要转移时，将掩膜版的开口处正对于待转移的所述micro LED芯片，可以一次性转移多个micro LED芯片，即实现micro LED芯片的巨量转移，提升了micro LED的转移效率；\n\n[0027]2.本申请提供的micro LED巨量转移装置，所述传送带由抗拉伸基板以及设置在所述抗拉伸基材一侧的粘胶层组成，由于所述传送带上设置有粘胶层，可以直接将所述micro LED芯片粘在传送带上，保证了所述micro LED芯片稳定的粘在所述传送带上并进行后续的清洗和干燥，减少了与所述micro LED芯片接触的次数，提高了micro LED巨量转移的良率。\n\n附图说明\n\n[0028]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0029]图1为本申请实施例提供的micro LED巨量转移装置的结构示意图。\n\n[0030]图2为本申请实施例提供的micro LED的结构示意图。\n\n[0031]图3为本申请实施例提供的粘着有被转移的所述micro LED芯片的传送带的俯视图。\n\n[0032]图4为本申请实施例提供的传送带的横截面示意图。\n\n[0033]图5为本申请实施例提供的micro LED巨量转移方法的流程示意图。\n\n具体实施方式\n\n[0034]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0035]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0036]本申请提供一种micro LED巨量转移装置及其转移方法，具体参阅图1-图5。\n\n[0037]由于现有的Micro LED应用于大尺寸显示面板时需要进行去掉LED的蓝宝石基板或GaAs基板，由于Micro LED的集成度较高，过于密集的Micro LED设置导致Micro LED的利用率不高，造成浪费，因此，实际使用时需要通过巨量转移将Micro LED转移至稀疏排列的驱动电路板上，由于Micro LED的体积较小，现有的巨量选择性转移装置及方法的效率和良率均较低。因此，本申请提供一种micro LED巨量转移装置及方法用以解决上述问题。\n\n[0038]参阅图1，为本申请提供的一种micro LED巨量转移装置的结构示意图，所述microLED巨量转移装置包括：光照模块1、转移模块2、清洗模块3以及干燥模块4；\n\n[0039]所述光照模块1设置在整个装置的最上面，所述光照模块1内设置有掩膜版12；在进行光照时，激光通过所述掩膜版12的开口照射到所述蓝宝石基板21上，将蓝宝石基板21中的GaN缓冲层212的分解为Ga和氮气N2，使得所述micro LED芯片22与所述蓝宝石衬底211分离，进而所述micro LED芯片22可以脱落到所述传送带24上；\n\n[0040]所述转移模块2设置在所述光照模块1的下方，所述转移模块2内包括：蓝宝石基板21、micro LED芯片22、传送带24以及载板25，待转移的所述micro LED芯片22正对于所述掩膜版12的开口处设置；所述掩膜版12上设置有多个开口处，将所述掩膜版12的开口处正对于待转移的所述micro LED芯片22，经激光照射后，待转移的所述micro LED芯片22即可直接脱落到所述传送带24上，实现所述micro LED芯片22的转移；\n\n[0041]所述清洗模块3包括：传送带33、清洗溶液32和清洗喷头31；在激光照射的过程中，所述micro LED芯片22可能有部分区域还残留有GaN缓冲层212中的Ga金属未脱落，或是与空气中的水氧发生反应，变成氧化镓等，会影响到所述micro LED芯片22的出光效果，因此，在对所述micro LED芯片22进行转移之后，还需要对所述micro LED芯片22上残留的镓金属及其氧化物进行清洗，以减小镓及其氧化物对所述micro LED芯片22发光效率的影响；\n\n[0042]所述干燥模块4包括：传送带42和干燥源41，用于对清洗后的所述micro LED芯片22进行清洗，避免清洗模块3中的清洗溶液残留在所述micro LED芯片22上，对所述microLED芯片22造成过度腐蚀，影响所述micro LED芯片22的良率。\n\n[0043]进一步地，参阅图2，所述蓝宝石基板21包括：蓝宝石衬底211和GaN缓冲层212，所述micro LED芯片22由N电极2211、N型GaN2212、N型限制层2213、MQWs多量子发光层2214、P型限制层2215、P型GaN2216以及P电极2217组成；根据发光层的颜色的不同，所述micro LED芯片22可以分为：红色micro LED芯片221、绿色micro LED芯片222以及蓝色micro LED芯片223，所述红色micro LED芯片221发出红光，所述绿色micro LED芯片222发出绿光，所述蓝色micro LED芯片223发出蓝光。\n\n[0044]参阅图4，在本申请的一些实施例中，所述传送带24由抗拉伸基板241以及设置在所述抗拉伸基材一侧的粘胶层242组成，所述抗拉伸基板241可卷曲，耐拉伸；所述粘胶层242正对于所述micro LED芯片22一侧设置，这样当所述micro LED芯片22倍激光照射脱落后，可以直接脱落在所述传送带24上，无需人为干预即可稳定运输，且所述micro LED芯片22的表面也不会受到挤压，提高了所述micro LED芯片22的良率。\n\n[0045]在本申请的一些实施例中，所述掩膜12上设置有多个开口，每个所述掩膜版12的开口处的开口大小和形状与每个所述micro LED芯片22的大小和形状相同，多个所述掩膜版的开口即一次光照可以照射多个待转移的所述micro LED芯片22，即实现多个所述microLED芯片22的转移。参阅图3，为粘着有被转移的所述micro LED芯片22的传送带的俯视图，所述传送带上粘着有多个所述红色micro LED芯片221、多个所述绿色micro LED芯片222以及多个所述蓝色micro LED芯片223。\n\n[0046]在本申请的一些实施例中，所述micro LED巨量转移装置还包括至少两个辊轮，所述辊轮带动所述传送带进行运动。\n\n[0047]进一步地，所述转移模块2内的传送带为第一传送带24，所述清洗模块3内的传送带为第二传送带33，所述干燥模块4内的传送带为第三传送带42，所述第一传送带24由第一辊轮23和第二辊轮34驱动，所述第二传送带33由第二辊轮34和第三辊轮35驱动，所述第三传送带42由第三辊轮35和第四辊轮43驱动。所述第一传送带24、所述第二传送带33和所述第三传送带42采用的材质、宽度和形状均相同，即为同一条传送带的其中一段传送带，每次传送时，从所述第一辊轮23处输出，至所述第四辊轮43处卷入，以完成对所述micro LED芯片22的转移、清洗和干燥。\n\n[0048]进一步地，所述第一辊轮23、所述第二辊轮34、所述第三辊轮35和所述第四辊轮43的材质相同，且形状均为圆柱形；由于所述第二辊轮34与所述第三辊轮35位于所述清洗模块3，为保证所述micro LED芯片22在进行清洗时，清洗溶液与靠近所述蓝宝石衬底一侧的所述micro LED芯片22的表面进行充分的反应，彻底清洗掉残留在所述micro LED芯片22靠近所述蓝宝石衬底一侧表面的镓金属及其氧化物，将所述第二辊轮34与所述第三辊轮35的半径设置得相等，且所述第二辊轮34与所述第三辊轮35的轴心位于同一水平线上，使得所述micro LED芯片22可以在所述第二传送带33上沿水平方向平稳运行。\n\n[0049]在本申请的一些实施例中，所述光照模块采用具有一定预设激光波长的固体激光器11；进一步地，所述固体激光器11的预设激光波长长度为：266nm，即在进行光照时，所述固体激光器11开始工作，稳定的发出266nm波长的激光对所述蓝宝石基板进行照射，使得所述蓝宝石基板上的GaN缓冲层分解，进而将所述micro LED芯片22与所述蓝宝石衬底剥离掉。\n\n[0050]在本申请的一些实施例中，所述清洗溶液为盐酸溶液，即所述盐酸溶液与镓金属及其氧化物进行反应，使得所述micro LED芯片22表面的镓金属及其氧化物被腐蚀掉。\n\n[0051]参阅图5，本申请还提供一种micro LED巨量转移方法，采用上述所述的micro LED巨量转移装置，该方法包括下述步骤：\n\n[0052]S10，透过掩膜版采用固体激光器照射蓝宝石基板；使得待转移的所述micro LED芯片正对于所述掩膜版的开口处，激光可以使得待转移的所述micro LED芯片22单独被剥离掉，节约成本，也提高了转移的效率；\n\n[0053]S20，脱落的micro LED芯片粘在传送带上，被所述传送带运输至清洗模块；被激光照射一段时间后，待转移的所述micro LED芯片上方的GaN缓冲层在激光的照射下，被分解成Ga和氮气，无法再将所述micro LED芯片与所述蓝宝石衬底黏在一起，所述micro LED芯片即脱落到所述传送带上，由于所述传送带上设置有粘胶层，使得所述micro LED芯片马上被黏在所述传送带上，随所述传送带运输至下一个模块；\n\n[0054]S30，清洗喷头喷出清洗溶液对所述清洗模块内的所述micro LED芯片进行清洗，洗去所述micro LED芯片上的Ga以及Ga的氧化物，再将所述micro LED芯片运送至干燥模块；将所述micro LED芯片表面残留的镓金属及其氧化物用盐酸溶液腐蚀掉，防止镓金属及其氧化物对所述micro LED芯片发光效率的影响；\n\n[0055]S40，利用干燥源对所述干燥模块内的所述micro LED芯片进行干燥，防止所述micro LED芯片表面残留有盐酸溶液，避免所述盐酸溶液对所述micro LED芯片的过度腐蚀，进而影响了所述micro LED芯片的良率。\n\n[0056]因此，本申请提供的一种micro LED巨量转移装置及其转移方法的有益效果为：首先，本申请提供的micro LED巨量转移装置，包括：光照模块、转移模块、清洗模块以及干燥模块，所述光照模块设置在整个装置的最上面，所述光照模块内设置有掩膜版；所述转移模块设置在所述光照模块的下方，所述转移模块内包括：蓝宝石基板、micro LED芯片、传送带以及载板，待转移的所述micro LED芯片正对于所述掩膜版的开口处设置；所述清洗模块包括：传送带、清洗溶液和清洗喷头；所述干燥模块包括：传送和干燥源；需要转移时，将掩膜版的开口处正对于待转移的所述micro LED芯片，可以一次性转移多个micro LED芯片，即实现micro LED芯片的巨量转移，提升了micro LED的转移效率；其次，本申请提供的microLED巨量转移装置，所述传送带由抗拉伸基板以及设置在所述抗拉伸基材一侧的粘胶层组成，由于所述传送带上设置有粘胶层，可以直接将所述micro LED芯片粘在传送带上，保证了所述micro LED芯片稳定的粘在所述传送带上并进行后续的清洗和干燥，减少了与所述micro LED芯片接触的次数，提高了micro LED巨量转移的良率。\n\n[0057]以上对本申请实施例所提供的一种micro LED巨量转移装置及其转移方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10807, 23861, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种彩膜基板和显示面板。\n\n背景技术\n\n[0002]随着全面屏的普及和消费者对机身一体化的追求，屏下传感技术成为中小尺寸显示领域开发重点。由于LCD屏属于整面背光的被动发光，光学式传感器与光学显示无法在空间上重合，因此限制了LCD屏向全面屏的方向发展。\n\n[0003]而OLED屏则是采用逐颗的OLED像素主动发光，相较LCD屏而言一方面具有高对比、轻薄、可弯曲、可折叠等优势，另一方面，基于OLED屏无需背光的特性，可以很好的与现行的光学传感器兼容，因而面内光学传感技术已成为目前OLED屏的“独有优势”，从而可以使OLED屏在显示模式和成像模式间切换，并且无需现行LCD屏挖孔方案所造成的挖孔区无法显示。\n\n[0004]因此，在日益追求极致全面屏的当下，LCD屏的低成本优势显得岌岌可危，如何使LCD屏能够满足当下对全面屏的极致需求已成为目前亟待解决的问题。\n\n发明内容\n\n[0005]本申请提供一种彩膜基板和显示面板，能够解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。\n\n[0006]为解决上述问题，本申请提供的技术方案如下：\n\n[0007]本申请提供一种彩膜基板，包括第一像素区域和邻近所述第一像素区域的第二像素区域，所述彩膜基板包括：\n\n[0008]基底；\n\n[0009]多个Micro LED发光单元，对应所述第一像素区域设置于所述基底的一侧，其中，多个所述Micro LED发光单元之间设有透光区；\n\n[0010]彩色色阻，对应所述第二像素区域设于所述基底的相对另一侧。\n\n[0011]在本申请的彩膜基板中，所述基底面向所述Micro LED发光单元的一侧设有封装层，所述封装层位于所述第一像素区域和所述第二像素区域内。\n\n[0012]在本申请的彩膜基板中，所述封装层背离所述基底一侧的表面与所述基底之间的距离大于所述Micro LED发光单元背离所述基底一侧的表面与所述基底之间的距离。\n\n[0013]在本申请的彩膜基板中，所述封装层的厚度为3μm-100μm；所述封装层对应所述Micro LED发光单元的部分的厚度为2μm-80μm。\n\n[0014]在本申请的彩膜基板中，所述封装层的透光率大于或等于70％。\n\n[0015]在本申请的彩膜基板中，所述彩膜基板还包括第一驱动电路，所述第一驱动电路对应所述第一像素区域设于所述基底面向所述Micro LED发光单元的一侧，所述Micro LED发光单元与所述第一驱动电路电连接。\n\n[0016]在本申请的彩膜基板中，所述第一驱动电路包括沿横向延伸的扫描线和沿纵向延伸的数据线，相邻两所述扫描线与相邻两所述数据线界定出子像素区域，所述Micro LED发光单元在所述基底上的正投影面积小于所述子像素区域的面积。\n\n[0017]在本申请的彩膜基板中，所述Micro LED发光单元在所述基底上的正投影面积占所述子像素区域面积的10％-50％，所述Micro LED发光单元包括红色发光单元、绿色发光单元以及蓝色发光单元。\n\n[0018]在本申请的彩膜基板中，所述彩色色阻背离所述基底的一侧设有平坦层，所述平坦层位于所述第一像素区域和所述第二像素区域内，所述平坦层背离所述基底一侧的表面为平整面。\n\n[0019]本申请还提供一种显示面板，包括如上所述的彩膜基板。\n\n[0020]本申请的有益效果为：本申请提供的彩膜基板和显示面板，通过将Micro LED(微发光二极管)显示技术与LCD(液晶显示器)显示技术相结合，从而实现LCD极致全面屏显示；并充分利用Micro LED发光单元体积小、可提升面板透过性的优势实现屏内传感集成功能。本申请在显示上实现了Micro LED显示技术与LCD显示技术在横向与纵向空间的无缝衔接，从而解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。\n\n附图说明\n\n[0021]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0022]图1(a)-1(e)为本申请实施例提供的不同类型的彩膜基板的俯视图；\n\n[0023]图2为本申请一种实施例提供的彩膜基板的截面示意图；\n\n[0024]图3为本申请实施例提供的彩膜基板具有Micro LED发光单元的示意图；\n\n[0025]图4为本申请实施例提供的彩膜基板的第一种制备方法流程图；\n\n[0026]图5(a)-5(d)为本申请彩膜基板的第一种制备方法流程示意图；\n\n[0027]图6为本申请实施例提供的彩膜基板的第二种制备方法流程图；\n\n[0028]图7(a)-7(b)为本申请彩膜基板的第二种制备方法流程示意图；\n\n[0029]图8为本申请实施例提供的显示面板的结构示意图；\n\n[0030]图9为本申请实施例提供的显示装置的结构示意图。\n\n具体实施方式\n\n[0031]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0032]在本申请的描述中，需要理解的是，术语“纵向”、“横向”、“长度”、“宽度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。在本申请中，“/”表示“或者”的意思。\n\n[0033]本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。\n\n[0034]在中小尺寸显示领域，全面屏技术成为当前的重点研发方向目前主流的显示技术包括液晶显示器(Liquid Crystal Display,LCD)和有机发光二极管(Organic Light-Emitting Diode,OLED)，其中LCD为被动发光技术，通过整面背光结构照射液晶盒实现光纤的亮暗控制，而OLED技术则是采用逐颗的OLED像素主动发光。因为相较而言具有高对比、轻薄、可弯曲、可折叠等优势，以及可以很好的与现行的光学指纹识别模组等兼容，因而面内光学传感技术已成为目前OLED屏的“独有优势”。而LCD屏的低成本优势显得岌岌可危。\n\n[0035]基于此，本申请的首要目的在于提供一种彩膜基板及其制备方法、显示面板及显示装置，用以解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。\n\n[0036]另外，Micro LED(微发光二极管)相较于OLED技术具有相似的主动发光特性，同时由于无机LED本身的稳定性与高效率等特点，在技术上较OLED具有寿命长、亮度高、控制芯片(chip)尺寸小、响应时间长等优势。但是相较于传统面板技术通过刻蚀等“减法制造”方式，Micro LED主要依赖于巨量转移(mass-transfer)的“加法制造”方式，在技术成熟度上较低，特别是面临巨量显示画素转移时具有先天的制程良率与成本挑战的问题。\n\n[0037]基于此，本申请的另一目的在于提供一种彩膜基板及其制备方法、显示面板及显示装置，以解决Micro LED应用于显示技术时由于巨量转移而导致制程良率低及成本高从而限制了Micro LED在显示技术上应用的问题。\n\n[0038]以下请结合具体实施例对本申请的彩膜基板及其制备方法、显示面板及显示装置进行详细描述。\n\n[0039]请参照图1(a)-1(e)所示，为本申请实施例提供的不同类型的彩膜基板的俯视图。本申请的彩膜基板包括第一像素区域100和邻近所述第一像素区域100的第二像素区域200，其中，所述第一像素区域100为Micro LED显示区域，所述第二像素区域200为液晶显示区域。所述第一像素区域100与所述第二像素区域200无缝衔接，因而在视觉上没有任何显示中断及不连续边界，因此，可以实现完全的全面屏设计。又由于Micro LED具有高亮、长寿命特征，故可以采用所述第一像素区域100内的部分Micro LED发光单元兼做补光灯、指示灯等功能。\n\n[0040]请结合图1(a)-1(e)以及图2所示，本申请的彩膜基板包括：基底10，所述基底10位于所述第一像素区域100和所述第二像素区域200内；多个Micro LED发光单元30，对应所述第一像素区域100设置于所述基底10的一侧，其中，多个所述Micro LED发光单元30之间设有透光区；彩色色阻50，对应所述第二像素区域200设于所述基底10的相对另一侧。\n\n[0041]由于本申请的彩膜基板采用微发光二极管显示技术与液晶显示技术相结合的形式，从而可以实现LCD极致全面屏显示。又由于彩膜基板在相邻两所述Micro LED发光单元30之间设有透光区，所述透光区可以允许光线穿过，因此可以在所述第一像素区域100内实现屏内传感集成方案。另外，本申请通过将所述Micro LED发光单元30集成于彩膜基板的表面(on cell)，因此可免除外挂式Micro LED显示玻璃导致的液晶面板和Micro LED显示玻璃额外对组制程，并且还可以缓解采用外挂式Micro LED显示玻璃导致的画面悬浮问题，本申请可实现将Micro LED显示方案集成于面板上。\n\n[0042]请参照图2所示，以下对本申请一种实施例提供的彩膜基板进行详细说明。所述彩膜基板包括：基底10，所述基底10可以为透光率较高的玻璃基板，或是柔性基板；第一驱动电路20，所述第一驱动电路20对应所述第一像素区域100设于所述基底10的第一表面10a上，第一驱动电路20用于为Micro LED发光单元30提供驱动信号，以使所述Micro LED发光单元30能够发光；多个Micro LED发光单元30对应所述第一像素区域100设置于所述基底10的第一表面10a一侧，且所述Micro LED发光单元30与所述第一驱动电路20电连接；封装层40设置于所述Micro LED发光单元30以及所述基底10上，用于封装所述Micro LED发光单元30；彩色色阻50对应所述第二像素区域200设于所述基底10的第二表面10b上，且相邻两所述彩色色阻50之间设置有黑色矩阵60；其中，所述彩色色阻50以及所述黑色矩阵60避开所述第一像素区域100设置。\n\n[0043]其中，所述第一驱动电路20包括沿横向延伸的扫描线(未图示)和沿纵向延伸的数据线(未图示)，相邻两所述扫描线与相邻两所述数据线界定出子像素区域。所述扫描线与所述数据线也可以延伸至所述第二像素区域200内，可以理解的是，为了不影响所述第二像素区域200内的像素显示，延伸至所述第二像素区域200内的所述扫描线以及所述数据线的部分避开所述彩色色阻50设置，即可以对应位于所述黑色矩阵60的位置。\n\n[0044]在一种实施例中，所述第一驱动电路20可以采用主动阵列(AM)驱动技术，即所述第一驱动电路20还包括薄膜晶体管(未图示)，每一所述Micro LED发光单元30通过对应的所述薄膜晶体管分别与对应的所述扫描线和对应的所述数据线电连接。\n\n[0045]在本实施例中，为优先保证所述第一像素区域100的穿透率，所述第一驱动电路20采用被动阵列(PM)驱动技术，即所述第一驱动电路20不设置薄膜晶体管。\n\n[0046]在本实施例中，所述Micro LED发光单元30为三色显示，即所述Micro LED发光单元30包括红色发光单元、绿色发光单元以及蓝色发光单元。所述Micro LED发光单元30的尺寸为1μm-100μm，所述Micro LED发光单元30的高度为1μm-20μm。其中，所述Micro LED发光单元30可以为基底面出射结构或者电极面出射结构，此处不做限制。\n\n[0047]在另一种实施例中，所述Micro LED发光单元30采用蓝色显示结合色转换技术方案，也就是说，所述红色发光单元包括蓝色发光单元以及设于所述蓝色发光单元上的色转换层，该色转换层可将所述蓝色发光单元发出的蓝光转换为红光；所述绿色发光单元包括蓝色发光单元以及设于所述蓝色发光单元上的色转换层，该色转换层可将所述蓝色发光单元发出的蓝光转换为绿光。其中，所述色转换层为量子点膜或荧光粉等，此处不做特殊限定。\n\n[0048]结合图3所示，为本申请实施例提供的彩膜基板具有Micro LED发光单元的示意图。由于所述Micro LED发光单元30具有尺寸小的优势，因此所述Micro LED发光单元30在所述基底上的正投影面积小于所述子像素区域P的面积，使得多个所述Micro LED发光单元30之间具有透光区300。\n\n[0049]进一步的，所述Micro LED发光单元30在所述基底上的正投影面积占所述子像素区域P面积的10％-50％。\n\n[0050]在所述第一像素区域100可以实现正常显示的情况下，又由于各所述MicroLED发光单元30的覆盖面积皆小于各子像素区域P的面积，因此，在所述子像素区域P内无所述Micro LED发光单元30覆盖的区域光线可以正常透过。可以通过对所述Micro LED发光单元30关闭，使所述第一像素区域100采集外界图像进入屏下传感器。如此一来，便可实现屏下指纹识别、屏下摄像头、屏下面部识别、屏下距离感知等各种屏下传感方案。\n\n[0051]请参照图2所示，所述封装层40整面的设置于所述第一像素区域100和所述第二像素区域200内，所述封装层40可以为层叠的无机层和有机层，此处不做限制。所述封装层40的材料具有良好的耐高温性能以及良好的透光性。所述封装层40一方面用于对所述MicroLED发光单元30及所述第一驱动电路20进行保护和封装，避免外界水汽等进入彩膜基板内部对器件造成损伤；另一方面用于对形成有所述Micro LED发光单元30的所述基底表面进行平整化。所述封装层40的厚度为3μm-200μm，能够填平由于绑定所述Micro LED发光单元30而在基底上形成的段差。即所述封装层40背离所述基底10一侧的表面与所述基底10之间的距离大于所述Micro LED发光单元30背离所述基底10一侧的表面与所述基底10之间的距离。\n\n[0052]进一步的，由于所述Micro LED发光单元30的高度通常为1μm-20μm，为保证彩膜基板的轻薄化，同时兼顾封装及平坦作用，所述封装层40的厚度可以为3μm-100μm。\n\n[0053]其中，所述封装层40对应所述Micro LED发光单元30的部分的厚度小于所述封装层40对应所述Micro LED发光单元30之外的部分的厚度。\n\n[0054]进一步的，所述封装层40对应所述Micro LED发光单元30的部分的厚度为2μm-80μm。因此，能够保证所述封装层40完全覆盖所述Micro LED发光单元30，以保证其良好的封装性能。\n\n[0055]其中，所述封装层40背离所述基底10一侧的表面为平整面，因此所述封装层40的设置还有效的解决了所述Micro LED发光单元30绑定工艺中造成的较大段差。\n\n[0056]为了不影响所述第一像素区域100的透光性能，所述封装层40的透光率大于或等于70％。\n\n[0057]进一步的，所述封装层40的透光率大于或等于85％。\n\n[0058]在一种实施例中，所述彩色色阻50背离所述基底10的一侧设有平坦层(未图示)，所述平坦层位于所述第一像素区域100和所述第二像素区域200内，所述平坦层背离所述基底10一侧的表面为平整面，如此一来，所述平坦层可以对所述基底设置有所述彩色色阻50一侧的表面进行平整化。\n\n[0059]在本实施例中，所述封装层40背向所述基底10一侧还设置有保护层，所述保护层用于保护所述封装层40不受损伤。\n\n[0060]由于本申请的彩膜基板只在所述第一像素区域100内设置所述Micro LED发光单元30，而所述第一像素区域100的面积占比较小，因此无需依赖巨量转移的方式。如此一来，即可以实现Micro LED显示技术在显示面板/显示装置上的应用，又可以解决巨量显示画素转移时制程良率较低以及成本较高的问题。\n\n[0061]在Micro LED显示技术应用于显示面板上时，由于在制备Micro LED的驱动电路以及绑定Micro LED发光单元的工艺都是需要在高温下进行的，高温会对显示面板上的元器件等造成一定的不良影响；尤其是Micro LED发光单元及其驱动电路制作在彩膜基板上时，制程的高温会影响彩膜基板上彩色色阻材料的特性，从而影响显示效果。\n\n[0062]基于此，本申请的又一目的在于提供一种彩膜基板的制备方法，以解决Micro LED发光单元及其驱动电路制作在彩膜基板上时，高温制程影响彩色色阻材料特性的问题。\n\n[0063]请参照图4所示，为本申请一种实施例提供的彩膜基板的制备方法流程图。\n\n[0064]所述方法包括以下步骤：\n\n[0065]步骤S1，请参照图5(a)所示，在基底10的第一表面10a上对应第一像素区域100的位置制备第一驱动电路20以及与所述第一驱动电路20电连接的第一焊接电极20a，所述第一驱动电路20包括沿横向延伸的扫描线和沿纵向延伸的数据线，所述第一焊接电极20a位于相邻两所述扫描线与相邻两所述数据线界定出的子像素区域内。\n\n[0066]其中，所述第一焊接电极20a包括一个N电极以及一个与N电极相对设置的P电极。\n\n[0067]步骤S2，请参照图5(b)所示，将Micro LED发光单元30转印于所述基底10的第一像素区域100内，且将所述Micro LED发光单元30上的第二焊接电极30a与所述第一焊接电极20a电性绑定。\n\n[0068]其中，所述第二焊接电极30a包括一个N电极以及一个与N电极相对设置的P电极，在绑定工艺中，所述Micro LED发光单元30的N电极与所述基底10上的N电极电连接，所述Micro LED发光单元30的P电极与所述基底10上的P电极电连接。\n\n[0069]步骤S3，请参照图5(c)所示，在所述Micro LED发光单元30以及所述基底10上制备封装层40。\n\n[0070]其中，所述封装层40能够填平所述Micro LED发光单元30与所述基底10形成的段差，且所述封装层40背离所述基底10的表面形成平整面。\n\n[0071]步骤S4，请参照图5(d)所示，在所述基底10的第二表面10b上制备彩色色阻50，所述彩色色阻50形成于邻近所述第一像素区域100的第二像素区域200内。\n\n[0072]其中，所述制备方法还包括在所述第二像素区域200内制备黑色矩阵60，所述黑色矩阵60位于相邻两所述彩色色阻50之间。所述彩色色阻50与所述黑色矩阵60制备的先后顺序此处不做限制。\n\n[0073]在另一种实施例中，在所述步骤S2之后，所述制备方法还包括以下步骤：\n\n[0074]在所述Micro LED发光单元上制备色转换薄膜，去除对应所述Micro LED发光单元之外的所述色转换薄膜，以形成正对所述Micro LED发光单元的色换换层。\n\n[0075]由于本申请的彩膜基板是先在基底上制备第一驱动电路以及绑定Micro LED发光单元，之后再制作彩色色阻及黑色矩阵，因此，可以保证第一驱动电路制作工艺以及MicroLED发光单元绑定工艺中的高温制程不影响彩色色阻材料特性。\n\n[0076]在本申请的另一种实施例中，还提供了一种彩膜基板的制备方法，如图6所示，与上述彩膜基板的制备方法的区别仅在于步骤S2，本实施例的步骤S2中又包括两个步骤，具体如下：\n\n[0077]步骤S21，请参照图7(a)所示，以Micro LED发光单元30具有电性接触区的表面30b背离所述基底10的方式将所述Micro LED发光单元30转印于所述基底10的第一像素区域100内。\n\n[0078]步骤S22，请参照图7(b)所示，在所述Micro LED发光单元30上制备导电薄膜，并对所述导电薄膜进行图案化，以形成电性连接所述Micro LED发光单元30的电性接触区与所述第一焊接电极20a的导电电极400。\n\n[0079]其中，所述电性接触区包括相对设置的N接触区和P接触区，一个所述导电电极400将N接触区与基底10上的N电极电连接，一个所述导电电极400将P接触区与基底10上的P电极电连接。\n\n[0080]由于本实施例的彩膜基板是先在基底上制备第一驱动电路以及绑定Micro LED发光单元，之后再制作彩色色阻及黑色矩阵，因此，可以保证第一驱动电路制作工艺以及Micro LED发光单元绑定工艺中的高温制程不影响彩色色阻材料特性。另外，又由于本实施例在Micro LED发光单元绑定工艺中，Micro LED发光单元无需设置传统的焊接电极，因此，可以减小Micro LED发光单元绑定后的高度。\n\n[0081]本申请还提供一种显示面板，如图8所示，所述显示面板包括如上所述的彩膜基板1，和阵列基板2，以及位于所述彩膜基板1与所述阵列基板2之间的液晶层3。其中，所述阵列基板2上设置有第二驱动电路21，所述第二驱动电路21设置于第二显示区域200内。由于对应显示面板的第一像素区域100内不设置所述第二驱动电路21，因此不会影响所述第一像素区域100的透光性。\n\n[0082]本申请还提供一种显示装置，如图9所示，所述显示装置包括如上所述的显示面板，以及背光模组4和传感器组件5。所述背光模组4对应第一像素区域100设有通孔41，所述传感器组件5正对所述通孔41设置。\n\n[0083]其中，所述传感器组件5为光学式传感器，可以实现面部识别、距离感应、指纹识别等，此处不做限制。\n\n[0084]综上所述，本申请提供的彩膜基板及其制备方法、显示面板、显示装置，通过采用微发光二极管显示技术与液晶显示技术相结合的形式，从而可以实现LCD极致全面屏显示。又由于彩膜基板在相邻两所述Micro LED发光单元之间设有透光区，所述透光区可以允许光线穿过，因此可以实现屏内传感集成方案。另外，由于本申请的彩膜基板是先在基底上制备第一驱动电路以及绑定Micro LED发光单元，之后再制作彩色色阻及黑色矩阵，因此，可以保证第一驱动电路制作工艺以及Micro LED发光单元绑定工艺中的高温制程不影响彩色色阻材料特性。\n\n[0085]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种彩膜基板和显示面板。\n\n背景技术\n\n[0002]随着全面屏的普及和消费者对机身一体化的追求，屏下传感技术成为中小尺寸显示领域开发重点。由于LCD屏属于整面背光的被动发光，光学式传感器与光学显示无法在空间上重合，因此限制了LCD屏向全面屏的方向发展。\n\n[0003]而OLED屏则是采用逐颗的OLED像素主动发光，相较LCD屏而言一方面具有高对比、轻薄、可弯曲、可折叠等优势，另一方面，基于OLED屏无需背光的特性，可以很好的与现行的光学传感器兼容，因而面内光学传感技术已成为目前OLED屏的“独有优势”，从而可以使OLED屏在显示模式和成像模式间切换，并且无需现行LCD屏挖孔方案所造成的挖孔区无法显示。\n\n[0004]因此，在日益追求极致全面屏的当下，LCD屏的低成本优势显得岌岌可危，如何使LCD屏能够满足当下对全面屏的极致需求已成为目前亟待解决的问题。\n\n发明内容\n\n[0005]本申请提供一种彩膜基板和显示面板，能够解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。\n\n[0006]为解决上述问题，本申请提供的技术方案如下：\n\n[0007]本申请提供一种彩膜基板，包括第一像素区域和邻近所述第一像素区域的第二像素区域，所述彩膜基板包括：\n\n[0008]基底；\n\n[0009]多个Micro LED发光单元，对应所述第一像素区域设置于所述基底的一侧，其中，多个所述Micro LED发光单元之间设有透光区；\n\n[0010]彩色色阻，对应所述第二像素区域设于所述基底的相对另一侧。\n\n[0011]在本申请的彩膜基板中，所述基底面向所述Micro LED发光单元的一侧设有封装层，所述封装层位于所述第一像素区域和所述第二像素区域内。\n\n[0012]在本申请的彩膜基板中，所述封装层背离所述基底一侧的表面与所述基底之间的距离大于所述Micro LED发光单元背离所述基底一侧的表面与所述基底之间的距离。\n\n[0013]在本申请的彩膜基板中，所述封装层的厚度为3μm-100μm；所述封装层对应所述Micro LED发光单元的部分的厚度为2μm-80μm。\n\n[0014]在本申请的彩膜基板中，所述封装层的透光率大于或等于70％。\n\n[0015]在本申请的彩膜基板中，所述彩膜基板还包括第一驱动电路，所述第一驱动电路对应所述第一像素区域设于所述基底面向所述Micro LED发光单元的一侧，所述Micro LED发光单元与所述第一驱动电路电连接。\n\n[0016]在本申请的彩膜基板中，所述第一驱动电路包括沿横向延伸的扫描线和沿纵向延伸的数据线，相邻两所述扫描线与相邻两所述数据线界定出子像素区域，所述Micro LED发光单元在所述基底上的正投影面积小于所述子像素区域的面积。\n\n[0017]在本申请的彩膜基板中，所述Micro LED发光单元在所述基底上的正投影面积占所述子像素区域面积的10％-50％，所述Micro LED发光单元包括红色发光单元、绿色发光单元以及蓝色发光单元。\n\n[0018]在本申请的彩膜基板中，所述彩色色阻背离所述基底的一侧设有平坦层，所述平坦层位于所述第一像素区域和所述第二像素区域内，所述平坦层背离所述基底一侧的表面为平整面。\n\n[0019]本申请还提供一种显示面板，包括如上所述的彩膜基板。\n\n[0020]本申请的有益效果为：本申请提供的彩膜基板和显示面板，通过将Micro LED(微发光二极管)显示技术与LCD(液晶显示器)显示技术相结合，从而实现LCD极致全面屏显示；并充分利用Micro LED发光单元体积小、可提升面板透过性的优势实现屏内传感集成功能。本申请在显示上实现了Micro LED显示技术与LCD显示技术在横向与纵向空间的无缝衔接，从而解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。\n\n附图说明\n\n[0021]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0022]图1(a)-1(e)为本申请实施例提供的不同类型的彩膜基板的俯视图；\n\n[0023]图2为本申请一种实施例提供的彩膜基板的截面示意图；\n\n[0024]图3为本申请实施例提供的彩膜基板具有Micro LED发光单元的示意图；\n\n[0025]图4为本申请实施例提供的彩膜基板的第一种制备方法流程图；\n\n[0026]图5(a)-5(d)为本申请彩膜基板的第一种制备方法流程示意图；\n\n[0027]图6为本申请实施例提供的彩膜基板的第二种制备方法流程图；\n\n[0028]图7(a)-7(b)为本申请彩膜基板的第二种制备方法流程示意图；\n\n[0029]图8为本申请实施例提供的显示面板的结构示意图；\n\n[0030]图9为本申请实施例提供的显示装置的结构示意图。\n\n具体实施方式\n\n[0031]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0032]在本申请的描述中，需要理解的是，术语“纵向”、“横向”、“长度”、“宽度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。在本申请中，“/”表示“或者”的意思。\n\n[0033]本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。\n\n[0034]在中小尺寸显示领域，全面屏技术成为当前的重点研发方向目前主流的显示技术包括液晶显示器(Liquid Crystal Display,LCD)和有机发光二极管(Organic Light-Emitting Diode,OLED)，其中LCD为被动发光技术，通过整面背光结构照射液晶盒实现光纤的亮暗控制，而OLED技术则是采用逐颗的OLED像素主动发光。因为相较而言具有高对比、轻薄、可弯曲、可折叠等优势，以及可以很好的与现行的光学指纹识别模组等兼容，因而面内光学传感技术已成为目前OLED屏的“独有优势”。而LCD屏的低成本优势显得岌岌可危。\n\n[0035]基于此，本申请的首要目的在于提供一种彩膜基板及其制备方法、显示面板及显示装置，用以解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。\n\n[0036]另外，Micro LED(微发光二极管)相较于OLED技术具有相似的主动发光特性，同时由于无机LED本身的稳定性与高效率等特点，在技术上较OLED具有寿命长、亮度高、控制芯片(chip)尺寸小、响应时间长等优势。但是相较于传统面板技术通过刻蚀等“减法制造”方式，Micro LED主要依赖于巨量转移(mass-transfer)的“加法制造”方式，在技术成熟度上较低，特别是面临巨量显示画素转移时具有先天的制程良率与成本挑战的问题。\n\n[0037]基于此，本申请的另一目的在于提供一种彩膜基板及其制备方法、显示面板及显示装置，以解决Micro LED应用于显示技术时由于巨量转移而导致制程良率低及成本高从而限制了Micro LED在显示技术上应用的问题。\n\n[0038]以下请结合具体实施例对本申请的彩膜基板及其制备方法、显示面板及显示装置进行详细描述。\n\n[0039]请参照图1(a)-1(e)所示，为本申请实施例提供的不同类型的彩膜基板的俯视图。本申请的彩膜基板包括第一像素区域100和邻近所述第一像素区域100的第二像素区域200，其中，所述第一像素区域100为Micro LED显示区域，所述第二像素区域200为液晶显示区域。所述第一像素区域100与所述第二像素区域200无缝衔接，因而在视觉上没有任何显示中断及不连续边界，因此，可以实现完全的全面屏设计。又由于Micro LED具有高亮、长寿命特征，故可以采用所述第一像素区域100内的部分Micro LED发光单元兼做补光灯、指示灯等功能。\n\n[0040]请结合图1(a)-1(e)以及图2所示，本申请的彩膜基板包括：基底10，所述基底10位于所述第一像素区域100和所述第二像素区域200内；多个Micro LED发光单元30，对应所述第一像素区域100设置于所述基底10的一侧，其中，多个所述Micro LED发光单元30之间设有透光区；彩色色阻50，对应所述第二像素区域200设于所述基底10的相对另一侧。\n\n[0041]由于本申请的彩膜基板采用微发光二极管显示技术与液晶显示技术相结合的形式，从而可以实现LCD极致全面屏显示。又由于彩膜基板在相邻两所述Micro LED发光单元30之间设有透光区，所述透光区可以允许光线穿过，因此可以在所述第一像素区域100内实现屏内传感集成方案。另外，本申请通过将所述Micro LED发光单元30集成于彩膜基板的表面(on cell)，因此可免除外挂式Micro LED显示玻璃导致的液晶面板和Micro LED显示玻璃额外对组制程，并且还可以缓解采用外挂式Micro LED显示玻璃导致的画面悬浮问题，本申请可实现将Micro LED显示方案集成于面板上。\n\n[0042]请参照图2所示，以下对本申请一种实施例提供的彩膜基板进行详细说明。所述彩膜基板包括：基底10，所述基底10可以为透光率较高的玻璃基板，或是柔性基板；第一驱动电路20，所述第一驱动电路20对应所述第一像素区域100设于所述基底10的第一表面10a上，第一驱动电路20用于为Micro LED发光单元30提供驱动信号，以使所述Micro LED发光单元30能够发光；多个Micro LED发光单元30对应所述第一像素区域100设置于所述基底10的第一表面10a一侧，且所述Micro LED发光单元30与所述第一驱动电路20电连接；封装层40设置于所述Micro LED发光单元30以及所述基底10上，用于封装所述Micro LED发光单元30；彩色色阻50对应所述第二像素区域200设于所述基底10的第二表面10b上，且相邻两所述彩色色阻50之间设置有黑色矩阵60；其中，所述彩色色阻50以及所述黑色矩阵60避开所述第一像素区域100设置。\n\n[0043]其中，所述第一驱动电路20包括沿横向延伸的扫描线(未图示)和沿纵向延伸的数据线(未图示)，相邻两所述扫描线与相邻两所述数据线界定出子像素区域。所述扫描线与所述数据线也可以延伸至所述第二像素区域200内，可以理解的是，为了不影响所述第二像素区域200内的像素显示，延伸至所述第二像素区域200内的所述扫描线以及所述数据线的部分避开所述彩色色阻50设置，即可以对应位于所述黑色矩阵60的位置。\n\n[0044]在一种实施例中，所述第一驱动电路20可以采用主动阵列(AM)驱动技术，即所述第一驱动电路20还包括薄膜晶体管(未图示)，每一所述Micro LED发光单元30通过对应的所述薄膜晶体管分别与对应的所述扫描线和对应的所述数据线电连接。\n\n[0045]在本实施例中，为优先保证所述第一像素区域100的穿透率，所述第一驱动电路20采用被动阵列(PM)驱动技术，即所述第一驱动电路20不设置薄膜晶体管。\n\n[0046]在本实施例中，所述Micro LED发光单元30为三色显示，即所述Micro LED发光单元30包括红色发光单元、绿色发光单元以及蓝色发光单元。所述Micro LED发光单元30的尺寸为1μm-100μm，所述Micro LED发光单元30的高度为1μm-20μm。其中，所述Micro LED发光单元30可以为基底面出射结构或者电极面出射结构，此处不做限制。\n\n[0047]在另一种实施例中，所述Micro LED发光单元30采用蓝色显示结合色转换技术方案，也就是说，所述红色发光单元包括蓝色发光单元以及设于所述蓝色发光单元上的色转换层，该色转换层可将所述蓝色发光单元发出的蓝光转换为红光；所述绿色发光单元包括蓝色发光单元以及设于所述蓝色发光单元上的色转换层，该色转换层可将所述蓝色发光单元发出的蓝光转换为绿光。其中，所述色转换层为量子点膜或荧光粉等，此处不做特殊限定。\n\n[0048]结合图3所示，为本申请实施例提供的彩膜基板具有Micro LED发光单元的示意图。由于所述Micro LED发光单元30具有尺寸小的优势，因此所述Micro LED发光单元30在所述基底上的正投影面积小于所述子像素区域P的面积，使得多个所述Micro LED发光单元30之间具有透光区300。\n\n[0049]进一步的，所述Micro LED发光单元30在所述基底上的正投影面积占所述子像素区域P面积的10％-50％。\n\n[0050]在所述第一像素区域100可以实现正常显示的情况下，又由于各所述MicroLED发光单元30的覆盖面积皆小于各子像素区域P的面积，因此，在所述子像素区域P内无所述Micro LED发光单元30覆盖的区域光线可以正常透过。可以通过对所述Micro LED发光单元30关闭，使所述第一像素区域100采集外界图像进入屏下传感器。如此一来，便可实现屏下指纹识别、屏下摄像头、屏下面部识别、屏下距离感知等各种屏下传感方案。\n\n[0051]请参照图2所示，所述封装层40整面的设置于所述第一像素区域100和所述第二像素区域200内，所述封装层40可以为层叠的无机层和有机层，此处不做限制。所述封装层40的材料具有良好的耐高温性能以及良好的透光性。所述封装层40一方面用于对所述MicroLED发光单元30及所述第一驱动电路20进行保护和封装，避免外界水汽等进入彩膜基板内部对器件造成损伤；另一方面用于对形成有所述Micro LED发光单元30的所述基底表面进行平整化。所述封装层40的厚度为3μm-200μm，能够填平由于绑定所述Micro LED发光单元30而在基底上形成的段差。即所述封装层40背离所述基底10一侧的表面与所述基底10之间的距离大于所述Micro LED发光单元30背离所述基底10一侧的表面与所述基底10之间的距离。\n\n[0052]进一步的，由于所述Micro LED发光单元30的高度通常为1μm-20μm，为保证彩膜基板的轻薄化，同时兼顾封装及平坦作用，所述封装层40的厚度可以为3μm-100μm。\n\n[0053]其中，所述封装层40对应所述Micro LED发光单元30的部分的厚度小于所述封装层40对应所述Micro LED发光单元30之外的部分的厚度。\n\n[0054]进一步的，所述封装层40对应所述Micro LED发光单元30的部分的厚度为2μm-80μm。因此，能够保证所述封装层40完全覆盖所述Micro LED发光单元30，以保证其良好的封装性能。\n\n[0055]其中，所述封装层40背离所述基底10一侧的表面为平整面，因此所述封装层40的设置还有效的解决了所述Micro LED发光单元30绑定工艺中造成的较大段差。\n\n[0056]为了不影响所述第一像素区域100的透光性能，所述封装层40的透光率大于或等于70％。\n\n[0057]进一步的，所述封装层40的透光率大于或等于85％。\n\n[0058]在一种实施例中，所述彩色色阻50背离所述基底10的一侧设有平坦层(未图示)，所述平坦层位于所述第一像素区域100和所述第二像素区域200内，所述平坦层背离所述基底10一侧的表面为平整面，如此一来，所述平坦层可以对所述基底设置有所述彩色色阻50一侧的表面进行平整化。\n\n[0059]在本实施例中，所述封装层40背向所述基底10一侧还设置有保护层，所述保护层用于保护所述封装层40不受损伤。\n\n[0060]由于本申请的彩膜基板只在所述第一像素区域100内设置所述Micro LED发光单元30，而所述第一像素区域100的面积占比较小，因此无需依赖巨量转移的方式。如此一来，即可以实现Micro LED显示技术在显示面板/显示装置上的应用，又可以解决巨量显示画素转移时制程良率较低以及成本较高的问题。\n\n[0061]在Micro LED显示技术应用于显示面板上时，由于在制备Micro LED的驱动电路以及绑定Micro LED发光单元的工艺都是需要在高温下进行的，高温会对显示面板上的元器件等造成一定的不良影响；尤其是Micro LED发光单元及其驱动电路制作在彩膜基板上时，制程的高温会影响彩膜基板上彩色色阻材料的特性，从而影响显示效果。\n\n[0062]基于此，本申请的又一目的在于提供一种彩膜基板的制备方法，以解决Micro LED发光单元及其驱动电路制作在彩膜基板上时，高温制程影响彩色色阻材料特性的问题。\n\n[0063]请参照图4所示，为本申请一种实施例提供的彩膜基板的制备方法流程图。\n\n[0064]所述方法包括以下步骤：\n\n[0065]步骤S1，请参照图5(a)所示，在基底10的第一表面10a上对应第一像素区域100的位置制备第一驱动电路20以及与所述第一驱动电路20电连接的第一焊接电极20a，所述第一驱动电路20包括沿横向延伸的扫描线和沿纵向延伸的数据线，所述第一焊接电极20a位于相邻两所述扫描线与相邻两所述数据线界定出的子像素区域内。\n\n[0066]其中，所述第一焊接电极20a包括一个N电极以及一个与N电极相对设置的P电极。\n\n[0067]步骤S2，请参照图5(b)所示，将Micro LED发光单元30转印于所述基底10的第一像素区域100内，且将所述Micro LED发光单元30上的第二焊接电极30a与所述第一焊接电极20a电性绑定。\n\n[0068]其中，所述第二焊接电极30a包括一个N电极以及一个与N电极相对设置的P电极，在绑定工艺中，所述Micro LED发光单元30的N电极与所述基底10上的N电极电连接，所述Micro LED发光单元30的P电极与所述基底10上的P电极电连接。\n\n[0069]步骤S3，请参照图5(c)所示，在所述Micro LED发光单元30以及所述基底10上制备封装层40。\n\n[0070]其中，所述封装层40能够填平所述Micro LED发光单元30与所述基底10形成的段差，且所述封装层40背离所述基底10的表面形成平整面。\n\n[0071]步骤S4，请参照图5(d)所示，在所述基底10的第二表面10b上制备彩色色阻50，所述彩色色阻50形成于邻近所述第一像素区域100的第二像素区域200内。\n\n[0072]其中，所述制备方法还包括在所述第二像素区域200内制备黑色矩阵60，所述黑色矩阵60位于相邻两所述彩色色阻50之间。所述彩色色阻50与所述黑色矩阵60制备的先后顺序此处不做限制。\n\n[0073]在另一种实施例中，在所述步骤S2之后，所述制备方法还包括以下步骤：\n\n[0074]在所述Micro LED发光单元上制备色转换薄膜，去除对应所述Micro LED发光单元之外的所述色转换薄膜，以形成正对所述Micro LED发光单元的色换换层。\n\n[0075]由于本申请的彩膜基板是先在基底上制备第一驱动电路以及绑定Micro LED发光单元，之后再制作彩色色阻及黑色矩阵，因此，可以保证第一驱动电路制作工艺以及MicroLED发光单元绑定工艺中的高温制程不影响彩色色阻材料特性。\n\n[0076]在本申请的另一种实施例中，还提供了一种彩膜基板的制备方法，如图6所示，与上述彩膜基板的制备方法的区别仅在于步骤S2，本实施例的步骤S2中又包括两个步骤，具体如下：\n\n[0077]步骤S21，请参照图7(a)所示，以Micro LED发光单元30具有电性接触区的表面30b背离所述基底10的方式将所述Micro LED发光单元30转印于所述基底10的第一像素区域100内。\n\n[0078]步骤S22，请参照图7(b)所示，在所述Micro LED发光单元30上制备导电薄膜，并对所述导电薄膜进行图案化，以形成电性连接所述Micro LED发光单元30的电性接触区与所述第一焊接电极20a的导电电极400。\n\n[0079]其中，所述电性接触区包括相对设置的N接触区和P接触区，一个所述导电电极400将N接触区与基底10上的N电极电连接，一个所述导电电极400将P接触区与基底10上的P电极电连接。\n\n[0080]由于本实施例的彩膜基板是先在基底上制备第一驱动电路以及绑定Micro LED发光单元，之后再制作彩色色阻及黑色矩阵，因此，可以保证第一驱动电路制作工艺以及Micro LED发光单元绑定工艺中的高温制程不影响彩色色阻材料特性。另外，又由于本实施例在Micro LED发光单元绑定工艺中，Micro LED发光单元无需设置传统的焊接电极，因此，可以减小Micro LED发光单元绑定后的高度。\n\n[0081]本申请还提供一种显示面板，如图8所示，所述显示面板包括如上所述的彩膜基板1，和阵列基板2，以及位于所述彩膜基板1与所述阵列基板2之间的液晶层3。其中，所述阵列基板2上设置有第二驱动电路21，所述第二驱动电路21设置于第二显示区域200内。由于对应显示面板的第一像素区域100内不设置所述第二驱动电路21，因此不会影响所述第一像素区域100的透光性。\n\n[0082]本申请还提供一种显示装置，如图9所示，所述显示装置包括如上所述的显示面板，以及背光模组4和传感器组件5。所述背光模组4对应第一像素区域100设有通孔41，所述传感器组件5正对所述通孔41设置。\n\n[0083]其中，所述传感器组件5为光学式传感器，可以实现面部识别、距离感应、指纹识别等，此处不做限制。\n\n[0084]综上所述，本申请提供的彩膜基板及其制备方法、显示面板、显示装置，通过采用微发光二极管显示技术与液晶显示技术相结合的形式，从而可以实现LCD极致全面屏显示。又由于彩膜基板在相邻两所述Micro LED发光单元之间设有透光区，所述透光区可以允许光线穿过，因此可以实现屏内传感集成方案。另外，由于本申请的彩膜基板是先在基底上制备第一驱动电路以及绑定Micro LED发光单元，之后再制作彩色色阻及黑色矩阵，因此，可以保证第一驱动电路制作工艺以及Micro LED发光单元绑定工艺中的高温制程不影响彩色色阻材料特性。\n\n[0085]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10808, 23862, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种彩膜基板、显示面板、显示装置。\n\n背景技术\n\n[0002]随着全面屏的普及和消费者对机身一体化的追求，屏下传感技术成为中小尺寸显示领域开发重点。由于LCD屏属于整面背光的被动发光，光学式传感器与光学显示无法在空间上重合，因此限制了LCD屏向全面屏的方向发展。\n\n[0003]而OLED屏则是采用逐颗的OLED像素主动发光，相较LCD屏而言一方面具有高对比、轻薄、可弯曲、可折叠等优势，另一方面，基于OLED屏无需背光的特性，可以很好的与现行的光学传感器兼容，因而面内光学传感技术已成为目前OLED屏的“独有优势”，从而可以使OLED屏在显示模式和成像模式间切换，并且无需现行LCD屏挖孔方案所造成的挖孔区无法显示。\n\n[0004]因此，在日益追求极致全面屏的当下，LCD屏的低成本优势显得岌岌可危，如何使LCD屏能够满足当下对全面屏的极致需求已成为目前亟待解决的问题。\n\n发明内容\n\n[0005]本申请提供一种彩膜基板、显示面板、显示装置，能够解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。\n\n[0006]为解决上述问题，本申请提供的技术方案如下：\n\n[0007]本申请提供一种彩膜基板，包括第一像素区域和邻近所述第一像素区域的第二像素区域，所述彩膜基板包括：\n\n[0008]基底；\n\n[0009]多个Micro LED发光单元，对应所述第一像素区域设置于所述基底上，其中，多个所述Micro LED发光单元之间设有透光区；\n\n[0010]平坦层，设置于所述Micro LED发光单元以及所述基底上；\n\n[0011]彩色色阻，对应所述第二像素区域设于所述平坦层上。\n\n[0012]在本申请的彩膜基板中，所述平坦层背离所述基底一侧的表面为平整面，所述彩膜基板还包括设于所述彩色色阻以及所述平坦层上的保护层，所述保护层背离所述基底一侧的表面为平整面。\n\n[0013]在本申请的彩膜基板中，所述平坦层包括第一子平坦层和第二子平坦层，所述第一子平坦层填充于相邻两所述Micro LED发光单元之间，所述第二子平坦层设置于所述Micro LED发光单元以及所述第一子平坦层上，所述第二子平坦层背离所述Micro LED发光单元一侧的表面为平整面。\n\n[0014]在本申请的彩膜基板中，所述彩色色阻背离所述基底一侧设有第三子平坦层，所述第三子平坦层背离所述基底一侧的表面为平整面，所述保护层设于所述第三子平坦层表面。\n\n[0015]在本申请的彩膜基板中，所述平坦层的厚度为3μm-100μm。\n\n[0016]在本申请的彩膜基板中，所述平坦层对应所述Micro LED发光单元的部分的厚度小于所述平坦层对应所述Micro LED发光单元之外的部分的厚度。\n\n[0017]在本申请的彩膜基板中，所述平坦层对应所述Micro LED发光单元的部分的厚度为2μm-80μm。\n\n[0018]在本申请的彩膜基板中，所述平坦层的透光率大于或等于70％。\n\n[0019]在本申请的彩膜基板中，所述彩膜基板还包括第一驱动电路，所述第一驱动电路对应所述第一像素区域设于所述基底面向所述Micro LED发光单元的一侧表面，所述MicroLED发光单元与所述第一驱动电路电连接。\n\n[0020]在本申请的彩膜基板中，所述第一驱动电路包括沿横向延伸的扫描线和沿纵向延伸的数据线，相邻两所述扫描线与相邻两所述数据线界定出子像素区域，所述Micro LED发光单元在所述基底上的正投影面积小于所述子像素区域的面积。\n\n[0021]在本申请的彩膜基板中，所述Micro LED发光单元在所述基底上的正投影面积占所述子像素区域面积的10％-50％，所述Micro LED发光单元包括红色发光单元、绿色发光单元以及蓝色发光单元。\n\n[0022]在本申请的彩膜基板中，所述红色发光单元包括蓝色发光单元以及设于所述蓝色发光单元上的色转换层，所述绿色发光单元包括蓝色发光单元以及设于所述蓝色发光单元上的色转换层，所述色转换层为量子点膜或荧光粉。\n\n[0023]在本申请的彩膜基板中，所述第一驱动电路还包括薄膜晶体管，每一所述MicroLED发光单元通过对应的所述薄膜晶体管分别与对应的所述扫描线和对应的所述数据线电连接。\n\n[0024]本申请还提供一种显示面板，包括如上所述的彩膜基板。\n\n[0025]本申请还提供一种显示装置，包括如上所述的彩膜基板。\n\n[0026]本申请的有益效果为：本申请提供的彩膜基板、显示面板、显示装置，通过将MicroLED(微发光二极管)显示技术与LCD(液晶显示器)显示技术相结合，从而实现LCD极致全面屏显示；并充分利用Micro LED发光单元体积小、可提升面板透过性的优势实现屏内传感集成功能。本申请在显示上实现了Micro LED显示技术与LCD显示技术在横向与纵向空间的无缝衔接，从而解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。\n\n附图说明\n\n[0027]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0028]图1(a)-1(e)为本申请实施例提供的不同类型的彩膜基板的俯视图；\n\n[0029]图2为本申请一种实施例提供的彩膜基板的截面示意图；\n\n[0030]图3为本申请实施例提供的彩膜基板具有Micro LED发光单元的示意图；\n\n[0031]图4为本申请另一种实施例提供的彩膜基板的结构示意图；\n\n[0032]图5为本申请又一种实施例提供的彩膜基板的结构示意图；\n\n[0033]图6为本申请实施例提供的彩膜基板的第一种制备方法流程图；\n\n[0034]图7(a)-7(d)为本申请彩膜基板的第一种制备方法流程示意图；\n\n[0035]图8为本申请实施例提供的彩膜基板的第二种制备方法流程图；\n\n[0036]图9(a)-9(b)为本申请彩膜基板的第二种制备方法流程示意图；\n\n[0037]图10为本申请实施例提供的显示面板的结构示意图；\n\n[0038]图11为本申请实施例提供的显示装置的结构示意图。\n\n具体实施方式\n\n[0039]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0040]在本申请的描述中，需要理解的是，术语“纵向”、“横向”、“长度”、“宽度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。在本申请中，“/”表示“或者”的意思。\n\n[0041]本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。\n\n[0042]在中小尺寸显示领域，全面屏技术成为当前的重点研发方向目前主流的显示技术包括液晶显示器(Liquid Crystal Display,LCD)和有机发光二极管(Organic Light-Emitting Diode,OLED)，其中LCD为被动发光技术，通过整面背光结构照射液晶盒实现光纤的亮暗控制，而OLED技术则是采用逐颗的OLED像素主动发光。因为相较而言具有高对比、轻薄、可弯曲、可折叠等优势，以及可以很好的与现行的光学指纹识别模组等兼容，因而面内光学传感技术已成为目前OLED屏的“独有优势”。而LCD屏的低成本优势显得岌岌可危。\n\n[0043]基于此，本申请的首要目的在于提供一种彩膜基板及其制备方法、显示面板及显示装置，用以解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。\n\n[0044]另外，Micro LED(微发光二极管)相较于OLED技术具有相似的主动发光特性，同时由于无机LED本身的稳定性与高效率等特点，在技术上较OLED具有寿命长、亮度高、控制芯片(chip)尺寸小、响应时间长等优势。但是相较于传统面板技术通过刻蚀等“减法制造”方式，Micro LED主要依赖于巨量转移(mass-transfer)的“加法制造”方式，在技术成熟度上较低，特别是面临巨量显示画素转移时具有先天的制程良率与成本挑战的问题。\n\n[0045]基于此，本申请的另一目的在于提供一种彩膜基板及其制备方法、显示面板及显示装置，以解决Micro LED应用于显示技术时由于巨量转移而导致制程良率低及成本高从而限制了Micro LED在显示技术上应用的问题。\n\n[0046]此外，在Micro LED应用于显示技术时，会涉及到Micro LED与基板的绑定(bonding)技术，但是由于Micro LED与基板绑定后整体高度大于中小尺寸LCD的Cell gap(即液晶盒的阵列基板与彩膜基板之间的间隙)，从而难以实现屏内(Incell)Micro LED显示技术的集成。\n\n[0047]基于此，本申请的又一目的在于提供一种彩膜基板及其制备方法、显示面板及显示装置，以解决由于Micro LED与基板的绑定工艺而使屏内(Incell)集成Micro LED显示技术难以实现的问题。\n\n[0048]以下请结合具体实施例对本申请的彩膜基板及其制备方法、显示面板及显示装置进行详细描述。\n\n[0049]请参照图1(a)-1(e)所示，为本申请实施例提供的不同类型的彩膜基板的俯视图。本申请的彩膜基板包括第一像素区域100和邻近所述第一像素区域100的第二像素区域200，其中，所述第一像素区域100为Micro LED显示区域，所述第二像素区域200为液晶显示区域。所述第一像素区域100与所述第二像素区域200无缝衔接，因而在视觉上没有任何显示中断及不连续边界，因此，可以实现完全的全面屏设计。又由于Micro LED具有高亮、长寿命特征，故可以采用所述第一像素区域100内的部分Micro LED发光单元兼做补光灯、指示灯等功能。\n\n[0050]请结合图1(a)-1(e)以及图2所示，本申请的彩膜基板包括：基底10，所述基底10位于所述第一像素区域100和所述第二像素区域200内；多个Micro LED发光单元30，对应所述第一像素区域100设置于所述基底10上，其中，多个所述Micro LED发光单元30之间设有透光区；平坦层40，设置于所述Micro LED发光单元30以及所述基底10上；彩色色阻50，对应所述第二像素区域200设于所述平坦层40上。\n\n[0051]由于本申请的彩膜基板采用微发光二极管显示技术与液晶显示技术相结合的形式，从而可以实现LCD极致全面屏显示。又由于彩膜基板在相邻两所述Micro LED发光单元30之间设有透光区，所述透光区可以允许光线穿过，因此可以在所述第一像素区域100内实现屏内传感集成方案。另外，本申请通过将所述Micro LED发光单元30集成于彩膜基板的内部，并用所述平坦层40进行平整处理，因此Micro LED发光单元的绑定工艺不会对彩膜基板与阵列基板的成盒工艺造成影响，可实现屏内集成Micro LED显示方案。\n\n[0052]请参照图2所示，以下对本申请一种实施例提供的彩膜基板进行详细说明。所述彩膜基板包括：基底10，所述基底10可以为透光率较高的玻璃基板，或是柔性基板；第一驱动电路20，所述第一驱动电路20对应所述第一像素区域100设于所述基底10上，第一驱动电路20用于为Micro LED发光单元30提供驱动信号，以使所述Micro LED发光单元30能够发光；多个Micro LED发光单元30对应所述第一像素区域100设置于所述基底10上，且所述MicroLED发光单元30与所述第一驱动电路20电连接；平坦层40设置于所述Micro LED发光单元30以及所述基底10上，所述平坦层40用于对形成有所述Micro LED发光单元30的所述基底表面进行平整化；彩色色阻50对应所述第二像素区域200设于所述平坦层40上，且相邻两所述彩色色阻50之间设置有黑色矩阵60；所述彩色色阻50与所述黑色矩阵60上还可以设置保护层70，所述保护层70一方面可以平坦彩膜基板的表面，另一方面可以保护其覆盖的膜层不受损伤。\n\n[0053]其中，所述第一驱动电路20包括沿横向延伸的扫描线(未图示)和沿纵向延伸的数据线(未图示)，相邻两所述扫描线与相邻两所述数据线界定出子像素区域。所述扫描线与所述数据线也可以延伸至所述第二像素区域200内，可以理解的是，为了不影响所述第二像素区域200内的像素显示，延伸至所述第二像素区域200内的所述扫描线以及所述数据线的部分避开所述彩色色阻50设置，即可以对应位于所述黑色矩阵60的位置。\n\n[0054]在一种实施例中，所述第一驱动电路20可以采用主动阵列(AM)驱动技术，即所述第一驱动电路20还包括薄膜晶体管(未图示)，每一所述Micro LED发光单元30通过对应的所述薄膜晶体管分别与对应的所述扫描线和对应的所述数据线电连接。\n\n[0055]在本实施例中，为优先保证所述第一像素区域100的穿透率，所述第一驱动电路20采用被动阵列(PM)驱动技术，即所述第一驱动电路20不设置薄膜晶体管。\n\n[0056]在本实施例中，所述Micro LED发光单元30为三色显示，即所述Micro LED发光单元30包括红色发光单元、绿色发光单元以及蓝色发光单元。所述Micro LED发光单元30的尺寸为1μm-100μm，所述Micro LED发光单元30的高度为1μm-20μm。其中，所述Micro LED发光单元30可以为基底面出射结构或者电极面出射结构，此处不做限制。\n\n[0057]在另一种实施例中，所述Micro LED发光单元30采用蓝色显示结合色转换技术方案，也就是说，所述红色发光单元包括蓝色发光单元以及设于所述蓝色发光单元上的色转换层，该色转换层可将所述蓝色发光单元发出的蓝光转换为红光；所述绿色发光单元包括蓝色发光单元以及设于所述蓝色发光单元上的色转换层，该色转换层可将所述蓝色发光单元发出的蓝光转换为绿光。其中，所述色转换层为量子点膜或荧光粉等，此处不做特殊限定。\n\n[0058]结合图3所示，为本申请实施例提供的彩膜基板具有Micro LED发光单元的示意图。由于所述Micro LED发光单元30具有尺寸小的优势，因此所述Micro LED发光单元30在所述基底上的正投影面积小于所述子像素区域P的面积，使得多个所述Micro LED发光单元30之间具有透光区300。\n\n[0059]进一步的，所述Micro LED发光单元30在所述基底上的正投影面积占所述子像素区域P面积的10％-50％。\n\n[0060]在所述第一像素区域100可以实现正常显示的情况下，又由于各所述Micro LED发光单元30的覆盖面积皆小于各子像素区域P的面积，因此，在所述子像素区域P内无所述Micro LED发光单元30覆盖的区域光线可以正常透过。可以通过对所述Micro LED发光单元30关闭，使所述第一像素区域100采集外界图像进入屏下传感器。如此一来，便可实现屏下指纹识别、屏下摄像头、屏下面部识别、屏下距离感知等各种屏下传感方案。\n\n[0061]请参照图2所示，所述平坦层40整面的设置于所述第一像素区域100和所述第二像素区域200内，所述平坦层40的材料包括但不限于有机树脂、OC胶、硅胶等，所述平坦层40的材料具有良好的耐高温性能以及良好的粘着性和透光性。所述平坦层40的厚度为3μm-200μm，能够填平由于绑定所述Micro LED发光单元30而在基底上形成的段差。\n\n[0062]进一步的，由于所述Micro LED发光单元30的高度通常为1μm-20μm，为保证彩膜基板的轻薄化，同时兼顾平坦作用，所述平坦层的厚度可以为3μm-100μm。\n\n[0063]其中，所述平坦层40对应所述Micro LED发光单元30的部分的厚度小于所述平坦层40对应所述Micro LED发光单元30之外的部分的厚度。\n\n[0064]进一步的，所述平坦层40对应所述Micro LED发光单元30的部分的厚度为2μm-80μm。因此，能够保证所述平坦层40完全覆盖所述Micro LED发光单元30。\n\n[0065]其中，所述平坦层40背离所述基底10一侧的表面为平整面，因此所述平坦层40的设置有效的解决了所述Micro LED发光单元30绑定工艺中会产生较大段差而使Micro LED显示技术难以实现屏内(Incell)集成的问题。\n\n[0066]为了不影响所述第一像素区域100的透光性能，所述平坦层40的透光率大于或等于70％。\n\n[0067]进一步的，所述平坦层40的透光率大于或等于85％。\n\n[0068]在本实施例中，所述第一像素区域100内不设置所述彩色色阻50以及所述黑色矩阵60。所述保护层70设置于所述第一像素区域100以及所述第二像素区域200内，其中，所述保护层70背离所述基底10一侧的表面为平整面。如此一来，实现了在彩膜基板内集成MicroLED显示技术，同时又由于彩膜基板用于与阵列基板对位贴合的表面为平整面，因此，本申请Micro LED发光单元30的绑定不会影响中小尺寸LCD的Cell gap。\n\n[0069]在其他实施例中，所述平坦层40可以为多层结构。请参照图4所示，为本申请另一种实施例提供的彩膜基板的结构示意图。图4中的彩膜基板与图2中的彩膜基板的结构相同/相似，区别仅在于：图4中的彩膜基板的所述平坦层40包括第一子平坦层401和第二子平坦层402，所述第一子平坦层401填充于相邻两所述Micro LED发光单元30之间，所述第二子平坦层402设置于所述Micro LED发光单元30以及所述第一子平坦层401上，所述第二子平坦层402背离所述Micro LED发光单元30一侧的表面为平整面。由于所述第一子平坦层401填平了所述Micro LED发光单元30与基底10的段差，如此一来，可进一步保证形成的所述第二子平坦层402的平整性。\n\n[0070]请参照图5所示，为本申请又一种实施例提供的彩膜基板的结构示意图。图5中的彩膜基板与图4中的彩膜基板的结构相同/相似，区别仅在于：图5中的彩膜基板的所述平坦层40还包括第三子平坦层403，所述第三子平坦层403设置于所述彩色色阻50背离所述基底10一侧；其中，所述第三子平坦层403背离所述基底10一侧的表面为平整面，所述保护层70设于所述第三子平坦层403表面。由于所述第三子平坦层403填平了所述彩色色阻50与平坦层40的段差，如此一来，可进一步保证形成的所述保护层70的平整性。\n\n[0071]由于本申请的彩膜基板只在所述第一像素区域100内设置所述Micro LED发光单元30，而所述第一像素区域100的面积占比较小，因此无需依赖巨量转移的方式。如此一来，即可以实现Micro LED显示技术在显示面板/显示装置上的应用，又可以解决巨量显示画素转移时制程良率较低以及成本较高的问题。\n\n[0072]本申请还提供了一种上述彩膜基板的制备方法，请参照图6所示，所述方法包括以下步骤：\n\n[0073]步骤S1，请参照图7(a)所示，在基底10的第一像素区域100制备第一驱动电路20以及与所述第一驱动电路20电连接的第一焊接电极20a，所述第一驱动电路20包括沿横向延伸的扫描线和沿纵向延伸的数据线，所述第一焊接电极20a位于相邻两所述扫描线与相邻两所述数据线界定出的子像素区域内。\n\n[0074]其中，所述第一焊接电极20a包括一个N电极以及一个与N电极相对设置的P电极。\n\n[0075]步骤S2，请参照图7(b)所示，将Micro LED发光单元30转印于所述基底10的第一像素区域100内，且将所述Micro LED发光单元30上的第二焊接电极30a与所述第一焊接电极20a电性绑定。\n\n[0076]其中，所述第二焊接电极30a包括一个N电极以及一个与N电极相对设置的P电极，在绑定工艺中，所述Micro LED发光单元30的N电极与所述基底10上的N电极电连接，所述Micro LED发光单元30的P电极与所述基底10上的P电极电连接。\n\n[0077]步骤S3，请参照图7(c)所示，在所述Micro LED发光单元30以及所述基底10上制备平坦层40。\n\n[0078]其中，所述平坦层40能够填平所述Micro LED发光单元30与所述基底10形成的段差，且所述平坦层40背离所述基底10的表面形成平整面。\n\n[0079]步骤S4，请参照图7(d)所示，在所述平坦层40上制备彩色色阻50，所述彩色色阻50形成于邻近所述第一像素区域100的第二像素区域200内。\n\n[0080]其中，所述制备方法还包括在所述第二像素区域200内制备黑色矩阵60，所述黑色矩阵60位于相邻两所述彩色色阻50之间。所述彩色色阻50与所述黑色矩阵60制备的先后顺序此处不做限制。之后在所述彩色色阻50上制备保护层。\n\n[0081]由于本申请的彩膜基板是先在基底上制备第一驱动电路以及绑定Micro LED发光单元，之后再制作彩色色阻及黑色矩阵，因此，可以保证第一驱动电路制作工艺以及MicroLED发光单元绑定工艺中的高温制程不影响彩色色阻材料特性。\n\n[0082]在本申请的另一种实施例中，还提供了一种彩膜基板的制备方法，如图8所示，与上述彩膜基板的制备方法的区别仅在于步骤S2，本实施例的步骤S2中又包括两个步骤，具体如下：\n\n[0083]步骤S21，请参照图9(a)所示，以Micro LED发光单元30具有电性接触区的表面30b背离所述基底10的方式将所述Micro LED发光单元30转印于所述基底10的第一像素区域100内。\n\n[0084]步骤S22，请参照图9(b)所示，在所述Micro LED发光单元30上制备导电薄膜，并对所述导电薄膜进行图案化，以形成电性连接所述Micro LED发光单元30的电性接触区与所述第一焊接电极20a的导电电极400。\n\n[0085]其中，所述电性接触区包括相对设置的N接触区和P接触区，一个所述导电电极400将N接触区与基底10上的N电极电连接，一个所述导电电极400将P接触区与基底10上的P电极电连接。\n\n[0086]由于本实施例的彩膜基板是先在基底上制备第一驱动电路以及绑定Micro LED发光单元，之后再制作彩色色阻及黑色矩阵，因此，可以保证第一驱动电路制作工艺以及Micro LED发光单元绑定工艺中的高温制程不影响彩色色阻材料特性。另外，又由于本实施例在Micro LED发光单元绑定工艺中，Micro LED发光单元无需设置传统的焊接电极，因此，可以减小Micro LED发光单元绑定后的高度。\n\n[0087]本申请还提供一种显示面板，如图10所示，所述显示面板包括如上所述的彩膜基板1、阵列基板2，以及位于所述彩膜基板1与所述阵列基板2之间的液晶层3。其中，所述阵列基板2上设置有第二驱动电路21，所述第二驱动电路21设置于第二显示区域200内。由于对应显示面板的第一像素区域100内不设置所述第二驱动电路21，因此不会影响所述第一像素区域100的透光性。\n\n[0088]本申请还提供一种显示装置，如图11所示，所述显示装置包括如上所述的显示面板，以及背光模组4和传感器组件5。所述背光模组4对应第一像素区域100设有通孔41，所述传感器组件5正对所述通孔41设置。\n\n[0089]其中，所述传感器组件5为光学式传感器，可以实现面部识别、距离感应、指纹识别等，此处不做限制。\n\n[0090]综上所述，本申请提供的彩膜基板及其制备方法、显示面板、显示装置，通过采用微发光二极管显示技术与液晶显示技术相结合的形式，从而可以实现LCD极致全面屏显示。又由于彩膜基板在相邻两所述Micro LED发光单元之间设有透光区，所述透光区可以允许光线穿过，因此可以实现屏内传感集成方案。另外，本申请通过将所述Micro LED发光单元集成于彩膜基板的内部，并用所述平坦层进行平整处理，因此Micro LED发光单元的绑定工艺不会对彩膜基板与阵列基板的成盒工艺造成影响，可实现屏内集成Micro LED显示方案。\n\n[0091]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种彩膜基板、显示面板、显示装置。\n\n背景技术\n\n[0002]随着全面屏的普及和消费者对机身一体化的追求，屏下传感技术成为中小尺寸显示领域开发重点。由于LCD屏属于整面背光的被动发光，光学式传感器与光学显示无法在空间上重合，因此限制了LCD屏向全面屏的方向发展。\n\n[0003]而OLED屏则是采用逐颗的OLED像素主动发光，相较LCD屏而言一方面具有高对比、轻薄、可弯曲、可折叠等优势，另一方面，基于OLED屏无需背光的特性，可以很好的与现行的光学传感器兼容，因而面内光学传感技术已成为目前OLED屏的“独有优势”，从而可以使OLED屏在显示模式和成像模式间切换，并且无需现行LCD屏挖孔方案所造成的挖孔区无法显示。\n\n[0004]因此，在日益追求极致全面屏的当下，LCD屏的低成本优势显得岌岌可危，如何使LCD屏能够满足当下对全面屏的极致需求已成为目前亟待解决的问题。\n\n发明内容\n\n[0005]本申请提供一种彩膜基板、显示面板、显示装置，能够解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。\n\n[0006]为解决上述问题，本申请提供的技术方案如下：\n\n[0007]本申请提供一种彩膜基板，包括第一像素区域和邻近所述第一像素区域的第二像素区域，所述彩膜基板包括：\n\n[0008]基底；\n\n[0009]多个Micro LED发光单元，对应所述第一像素区域设置于所述基底上，其中，多个所述Micro LED发光单元之间设有透光区；\n\n[0010]平坦层，设置于所述Micro LED发光单元以及所述基底上；\n\n[0011]彩色色阻，对应所述第二像素区域设于所述平坦层上。\n\n[0012]在本申请的彩膜基板中，所述平坦层背离所述基底一侧的表面为平整面，所述彩膜基板还包括设于所述彩色色阻以及所述平坦层上的保护层，所述保护层背离所述基底一侧的表面为平整面。\n\n[0013]在本申请的彩膜基板中，所述平坦层包括第一子平坦层和第二子平坦层，所述第一子平坦层填充于相邻两所述Micro LED发光单元之间，所述第二子平坦层设置于所述Micro LED发光单元以及所述第一子平坦层上，所述第二子平坦层背离所述Micro LED发光单元一侧的表面为平整面。\n\n[0014]在本申请的彩膜基板中，所述彩色色阻背离所述基底一侧设有第三子平坦层，所述第三子平坦层背离所述基底一侧的表面为平整面，所述保护层设于所述第三子平坦层表面。\n\n[0015]在本申请的彩膜基板中，所述平坦层的厚度为3μm-100μm。\n\n[0016]在本申请的彩膜基板中，所述平坦层对应所述Micro LED发光单元的部分的厚度小于所述平坦层对应所述Micro LED发光单元之外的部分的厚度。\n\n[0017]在本申请的彩膜基板中，所述平坦层对应所述Micro LED发光单元的部分的厚度为2μm-80μm。\n\n[0018]在本申请的彩膜基板中，所述平坦层的透光率大于或等于70％。\n\n[0019]在本申请的彩膜基板中，所述彩膜基板还包括第一驱动电路，所述第一驱动电路对应所述第一像素区域设于所述基底面向所述Micro LED发光单元的一侧表面，所述MicroLED发光单元与所述第一驱动电路电连接。\n\n[0020]在本申请的彩膜基板中，所述第一驱动电路包括沿横向延伸的扫描线和沿纵向延伸的数据线，相邻两所述扫描线与相邻两所述数据线界定出子像素区域，所述Micro LED发光单元在所述基底上的正投影面积小于所述子像素区域的面积。\n\n[0021]在本申请的彩膜基板中，所述Micro LED发光单元在所述基底上的正投影面积占所述子像素区域面积的10％-50％，所述Micro LED发光单元包括红色发光单元、绿色发光单元以及蓝色发光单元。\n\n[0022]在本申请的彩膜基板中，所述红色发光单元包括蓝色发光单元以及设于所述蓝色发光单元上的色转换层，所述绿色发光单元包括蓝色发光单元以及设于所述蓝色发光单元上的色转换层，所述色转换层为量子点膜或荧光粉。\n\n[0023]在本申请的彩膜基板中，所述第一驱动电路还包括薄膜晶体管，每一所述MicroLED发光单元通过对应的所述薄膜晶体管分别与对应的所述扫描线和对应的所述数据线电连接。\n\n[0024]本申请还提供一种显示面板，包括如上所述的彩膜基板。\n\n[0025]本申请还提供一种显示装置，包括如上所述的彩膜基板。\n\n[0026]本申请的有益效果为：本申请提供的彩膜基板、显示面板、显示装置，通过将MicroLED(微发光二极管)显示技术与LCD(液晶显示器)显示技术相结合，从而实现LCD极致全面屏显示；并充分利用Micro LED发光单元体积小、可提升面板透过性的优势实现屏内传感集成功能。本申请在显示上实现了Micro LED显示技术与LCD显示技术在横向与纵向空间的无缝衔接，从而解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。\n\n附图说明\n\n[0027]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0028]图1(a)-1(e)为本申请实施例提供的不同类型的彩膜基板的俯视图；\n\n[0029]图2为本申请一种实施例提供的彩膜基板的截面示意图；\n\n[0030]图3为本申请实施例提供的彩膜基板具有Micro LED发光单元的示意图；\n\n[0031]图4为本申请另一种实施例提供的彩膜基板的结构示意图；\n\n[0032]图5为本申请又一种实施例提供的彩膜基板的结构示意图；\n\n[0033]图6为本申请实施例提供的彩膜基板的第一种制备方法流程图；\n\n[0034]图7(a)-7(d)为本申请彩膜基板的第一种制备方法流程示意图；\n\n[0035]图8为本申请实施例提供的彩膜基板的第二种制备方法流程图；\n\n[0036]图9(a)-9(b)为本申请彩膜基板的第二种制备方法流程示意图；\n\n[0037]图10为本申请实施例提供的显示面板的结构示意图；\n\n[0038]图11为本申请实施例提供的显示装置的结构示意图。\n\n具体实施方式\n\n[0039]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0040]在本申请的描述中，需要理解的是，术语“纵向”、“横向”、“长度”、“宽度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。在本申请中，“/”表示“或者”的意思。\n\n[0041]本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。\n\n[0042]在中小尺寸显示领域，全面屏技术成为当前的重点研发方向目前主流的显示技术包括液晶显示器(Liquid Crystal Display,LCD)和有机发光二极管(Organic Light-Emitting Diode,OLED)，其中LCD为被动发光技术，通过整面背光结构照射液晶盒实现光纤的亮暗控制，而OLED技术则是采用逐颗的OLED像素主动发光。因为相较而言具有高对比、轻薄、可弯曲、可折叠等优势，以及可以很好的与现行的光学指纹识别模组等兼容，因而面内光学传感技术已成为目前OLED屏的“独有优势”。而LCD屏的低成本优势显得岌岌可危。\n\n[0043]基于此，本申请的首要目的在于提供一种彩膜基板及其制备方法、显示面板及显示装置，用以解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。\n\n[0044]另外，Micro LED(微发光二极管)相较于OLED技术具有相似的主动发光特性，同时由于无机LED本身的稳定性与高效率等特点，在技术上较OLED具有寿命长、亮度高、控制芯片(chip)尺寸小、响应时间长等优势。但是相较于传统面板技术通过刻蚀等“减法制造”方式，Micro LED主要依赖于巨量转移(mass-transfer)的“加法制造”方式，在技术成熟度上较低，特别是面临巨量显示画素转移时具有先天的制程良率与成本挑战的问题。\n\n[0045]基于此，本申请的另一目的在于提供一种彩膜基板及其制备方法、显示面板及显示装置，以解决Micro LED应用于显示技术时由于巨量转移而导致制程良率低及成本高从而限制了Micro LED在显示技术上应用的问题。\n\n[0046]此外，在Micro LED应用于显示技术时，会涉及到Micro LED与基板的绑定(bonding)技术，但是由于Micro LED与基板绑定后整体高度大于中小尺寸LCD的Cell gap(即液晶盒的阵列基板与彩膜基板之间的间隙)，从而难以实现屏内(Incell)Micro LED显示技术的集成。\n\n[0047]基于此，本申请的又一目的在于提供一种彩膜基板及其制备方法、显示面板及显示装置，以解决由于Micro LED与基板的绑定工艺而使屏内(Incell)集成Micro LED显示技术难以实现的问题。\n\n[0048]以下请结合具体实施例对本申请的彩膜基板及其制备方法、显示面板及显示装置进行详细描述。\n\n[0049]请参照图1(a)-1(e)所示，为本申请实施例提供的不同类型的彩膜基板的俯视图。本申请的彩膜基板包括第一像素区域100和邻近所述第一像素区域100的第二像素区域200，其中，所述第一像素区域100为Micro LED显示区域，所述第二像素区域200为液晶显示区域。所述第一像素区域100与所述第二像素区域200无缝衔接，因而在视觉上没有任何显示中断及不连续边界，因此，可以实现完全的全面屏设计。又由于Micro LED具有高亮、长寿命特征，故可以采用所述第一像素区域100内的部分Micro LED发光单元兼做补光灯、指示灯等功能。\n\n[0050]请结合图1(a)-1(e)以及图2所示，本申请的彩膜基板包括：基底10，所述基底10位于所述第一像素区域100和所述第二像素区域200内；多个Micro LED发光单元30，对应所述第一像素区域100设置于所述基底10上，其中，多个所述Micro LED发光单元30之间设有透光区；平坦层40，设置于所述Micro LED发光单元30以及所述基底10上；彩色色阻50，对应所述第二像素区域200设于所述平坦层40上。\n\n[0051]由于本申请的彩膜基板采用微发光二极管显示技术与液晶显示技术相结合的形式，从而可以实现LCD极致全面屏显示。又由于彩膜基板在相邻两所述Micro LED发光单元30之间设有透光区，所述透光区可以允许光线穿过，因此可以在所述第一像素区域100内实现屏内传感集成方案。另外，本申请通过将所述Micro LED发光单元30集成于彩膜基板的内部，并用所述平坦层40进行平整处理，因此Micro LED发光单元的绑定工艺不会对彩膜基板与阵列基板的成盒工艺造成影响，可实现屏内集成Micro LED显示方案。\n\n[0052]请参照图2所示，以下对本申请一种实施例提供的彩膜基板进行详细说明。所述彩膜基板包括：基底10，所述基底10可以为透光率较高的玻璃基板，或是柔性基板；第一驱动电路20，所述第一驱动电路20对应所述第一像素区域100设于所述基底10上，第一驱动电路20用于为Micro LED发光单元30提供驱动信号，以使所述Micro LED发光单元30能够发光；多个Micro LED发光单元30对应所述第一像素区域100设置于所述基底10上，且所述MicroLED发光单元30与所述第一驱动电路20电连接；平坦层40设置于所述Micro LED发光单元30以及所述基底10上，所述平坦层40用于对形成有所述Micro LED发光单元30的所述基底表面进行平整化；彩色色阻50对应所述第二像素区域200设于所述平坦层40上，且相邻两所述彩色色阻50之间设置有黑色矩阵60；所述彩色色阻50与所述黑色矩阵60上还可以设置保护层70，所述保护层70一方面可以平坦彩膜基板的表面，另一方面可以保护其覆盖的膜层不受损伤。\n\n[0053]其中，所述第一驱动电路20包括沿横向延伸的扫描线(未图示)和沿纵向延伸的数据线(未图示)，相邻两所述扫描线与相邻两所述数据线界定出子像素区域。所述扫描线与所述数据线也可以延伸至所述第二像素区域200内，可以理解的是，为了不影响所述第二像素区域200内的像素显示，延伸至所述第二像素区域200内的所述扫描线以及所述数据线的部分避开所述彩色色阻50设置，即可以对应位于所述黑色矩阵60的位置。\n\n[0054]在一种实施例中，所述第一驱动电路20可以采用主动阵列(AM)驱动技术，即所述第一驱动电路20还包括薄膜晶体管(未图示)，每一所述Micro LED发光单元30通过对应的所述薄膜晶体管分别与对应的所述扫描线和对应的所述数据线电连接。\n\n[0055]在本实施例中，为优先保证所述第一像素区域100的穿透率，所述第一驱动电路20采用被动阵列(PM)驱动技术，即所述第一驱动电路20不设置薄膜晶体管。\n\n[0056]在本实施例中，所述Micro LED发光单元30为三色显示，即所述Micro LED发光单元30包括红色发光单元、绿色发光单元以及蓝色发光单元。所述Micro LED发光单元30的尺寸为1μm-100μm，所述Micro LED发光单元30的高度为1μm-20μm。其中，所述Micro LED发光单元30可以为基底面出射结构或者电极面出射结构，此处不做限制。\n\n[0057]在另一种实施例中，所述Micro LED发光单元30采用蓝色显示结合色转换技术方案，也就是说，所述红色发光单元包括蓝色发光单元以及设于所述蓝色发光单元上的色转换层，该色转换层可将所述蓝色发光单元发出的蓝光转换为红光；所述绿色发光单元包括蓝色发光单元以及设于所述蓝色发光单元上的色转换层，该色转换层可将所述蓝色发光单元发出的蓝光转换为绿光。其中，所述色转换层为量子点膜或荧光粉等，此处不做特殊限定。\n\n[0058]结合图3所示，为本申请实施例提供的彩膜基板具有Micro LED发光单元的示意图。由于所述Micro LED发光单元30具有尺寸小的优势，因此所述Micro LED发光单元30在所述基底上的正投影面积小于所述子像素区域P的面积，使得多个所述Micro LED发光单元30之间具有透光区300。\n\n[0059]进一步的，所述Micro LED发光单元30在所述基底上的正投影面积占所述子像素区域P面积的10％-50％。\n\n[0060]在所述第一像素区域100可以实现正常显示的情况下，又由于各所述Micro LED发光单元30的覆盖面积皆小于各子像素区域P的面积，因此，在所述子像素区域P内无所述Micro LED发光单元30覆盖的区域光线可以正常透过。可以通过对所述Micro LED发光单元30关闭，使所述第一像素区域100采集外界图像进入屏下传感器。如此一来，便可实现屏下指纹识别、屏下摄像头、屏下面部识别、屏下距离感知等各种屏下传感方案。\n\n[0061]请参照图2所示，所述平坦层40整面的设置于所述第一像素区域100和所述第二像素区域200内，所述平坦层40的材料包括但不限于有机树脂、OC胶、硅胶等，所述平坦层40的材料具有良好的耐高温性能以及良好的粘着性和透光性。所述平坦层40的厚度为3μm-200μm，能够填平由于绑定所述Micro LED发光单元30而在基底上形成的段差。\n\n[0062]进一步的，由于所述Micro LED发光单元30的高度通常为1μm-20μm，为保证彩膜基板的轻薄化，同时兼顾平坦作用，所述平坦层的厚度可以为3μm-100μm。\n\n[0063]其中，所述平坦层40对应所述Micro LED发光单元30的部分的厚度小于所述平坦层40对应所述Micro LED发光单元30之外的部分的厚度。\n\n[0064]进一步的，所述平坦层40对应所述Micro LED发光单元30的部分的厚度为2μm-80μm。因此，能够保证所述平坦层40完全覆盖所述Micro LED发光单元30。\n\n[0065]其中，所述平坦层40背离所述基底10一侧的表面为平整面，因此所述平坦层40的设置有效的解决了所述Micro LED发光单元30绑定工艺中会产生较大段差而使Micro LED显示技术难以实现屏内(Incell)集成的问题。\n\n[0066]为了不影响所述第一像素区域100的透光性能，所述平坦层40的透光率大于或等于70％。\n\n[0067]进一步的，所述平坦层40的透光率大于或等于85％。\n\n[0068]在本实施例中，所述第一像素区域100内不设置所述彩色色阻50以及所述黑色矩阵60。所述保护层70设置于所述第一像素区域100以及所述第二像素区域200内，其中，所述保护层70背离所述基底10一侧的表面为平整面。如此一来，实现了在彩膜基板内集成MicroLED显示技术，同时又由于彩膜基板用于与阵列基板对位贴合的表面为平整面，因此，本申请Micro LED发光单元30的绑定不会影响中小尺寸LCD的Cell gap。\n\n[0069]在其他实施例中，所述平坦层40可以为多层结构。请参照图4所示，为本申请另一种实施例提供的彩膜基板的结构示意图。图4中的彩膜基板与图2中的彩膜基板的结构相同/相似，区别仅在于：图4中的彩膜基板的所述平坦层40包括第一子平坦层401和第二子平坦层402，所述第一子平坦层401填充于相邻两所述Micro LED发光单元30之间，所述第二子平坦层402设置于所述Micro LED发光单元30以及所述第一子平坦层401上，所述第二子平坦层402背离所述Micro LED发光单元30一侧的表面为平整面。由于所述第一子平坦层401填平了所述Micro LED发光单元30与基底10的段差，如此一来，可进一步保证形成的所述第二子平坦层402的平整性。\n\n[0070]请参照图5所示，为本申请又一种实施例提供的彩膜基板的结构示意图。图5中的彩膜基板与图4中的彩膜基板的结构相同/相似，区别仅在于：图5中的彩膜基板的所述平坦层40还包括第三子平坦层403，所述第三子平坦层403设置于所述彩色色阻50背离所述基底10一侧；其中，所述第三子平坦层403背离所述基底10一侧的表面为平整面，所述保护层70设于所述第三子平坦层403表面。由于所述第三子平坦层403填平了所述彩色色阻50与平坦层40的段差，如此一来，可进一步保证形成的所述保护层70的平整性。\n\n[0071]由于本申请的彩膜基板只在所述第一像素区域100内设置所述Micro LED发光单元30，而所述第一像素区域100的面积占比较小，因此无需依赖巨量转移的方式。如此一来，即可以实现Micro LED显示技术在显示面板/显示装置上的应用，又可以解决巨量显示画素转移时制程良率较低以及成本较高的问题。\n\n[0072]本申请还提供了一种上述彩膜基板的制备方法，请参照图6所示，所述方法包括以下步骤：\n\n[0073]步骤S1，请参照图7(a)所示，在基底10的第一像素区域100制备第一驱动电路20以及与所述第一驱动电路20电连接的第一焊接电极20a，所述第一驱动电路20包括沿横向延伸的扫描线和沿纵向延伸的数据线，所述第一焊接电极20a位于相邻两所述扫描线与相邻两所述数据线界定出的子像素区域内。\n\n[0074]其中，所述第一焊接电极20a包括一个N电极以及一个与N电极相对设置的P电极。\n\n[0075]步骤S2，请参照图7(b)所示，将Micro LED发光单元30转印于所述基底10的第一像素区域100内，且将所述Micro LED发光单元30上的第二焊接电极30a与所述第一焊接电极20a电性绑定。\n\n[0076]其中，所述第二焊接电极30a包括一个N电极以及一个与N电极相对设置的P电极，在绑定工艺中，所述Micro LED发光单元30的N电极与所述基底10上的N电极电连接，所述Micro LED发光单元30的P电极与所述基底10上的P电极电连接。\n\n[0077]步骤S3，请参照图7(c)所示，在所述Micro LED发光单元30以及所述基底10上制备平坦层40。\n\n[0078]其中，所述平坦层40能够填平所述Micro LED发光单元30与所述基底10形成的段差，且所述平坦层40背离所述基底10的表面形成平整面。\n\n[0079]步骤S4，请参照图7(d)所示，在所述平坦层40上制备彩色色阻50，所述彩色色阻50形成于邻近所述第一像素区域100的第二像素区域200内。\n\n[0080]其中，所述制备方法还包括在所述第二像素区域200内制备黑色矩阵60，所述黑色矩阵60位于相邻两所述彩色色阻50之间。所述彩色色阻50与所述黑色矩阵60制备的先后顺序此处不做限制。之后在所述彩色色阻50上制备保护层。\n\n[0081]由于本申请的彩膜基板是先在基底上制备第一驱动电路以及绑定Micro LED发光单元，之后再制作彩色色阻及黑色矩阵，因此，可以保证第一驱动电路制作工艺以及MicroLED发光单元绑定工艺中的高温制程不影响彩色色阻材料特性。\n\n[0082]在本申请的另一种实施例中，还提供了一种彩膜基板的制备方法，如图8所示，与上述彩膜基板的制备方法的区别仅在于步骤S2，本实施例的步骤S2中又包括两个步骤，具体如下：\n\n[0083]步骤S21，请参照图9(a)所示，以Micro LED发光单元30具有电性接触区的表面30b背离所述基底10的方式将所述Micro LED发光单元30转印于所述基底10的第一像素区域100内。\n\n[0084]步骤S22，请参照图9(b)所示，在所述Micro LED发光单元30上制备导电薄膜，并对所述导电薄膜进行图案化，以形成电性连接所述Micro LED发光单元30的电性接触区与所述第一焊接电极20a的导电电极400。\n\n[0085]其中，所述电性接触区包括相对设置的N接触区和P接触区，一个所述导电电极400将N接触区与基底10上的N电极电连接，一个所述导电电极400将P接触区与基底10上的P电极电连接。\n\n[0086]由于本实施例的彩膜基板是先在基底上制备第一驱动电路以及绑定Micro LED发光单元，之后再制作彩色色阻及黑色矩阵，因此，可以保证第一驱动电路制作工艺以及Micro LED发光单元绑定工艺中的高温制程不影响彩色色阻材料特性。另外，又由于本实施例在Micro LED发光单元绑定工艺中，Micro LED发光单元无需设置传统的焊接电极，因此，可以减小Micro LED发光单元绑定后的高度。\n\n[0087]本申请还提供一种显示面板，如图10所示，所述显示面板包括如上所述的彩膜基板1、阵列基板2，以及位于所述彩膜基板1与所述阵列基板2之间的液晶层3。其中，所述阵列基板2上设置有第二驱动电路21，所述第二驱动电路21设置于第二显示区域200内。由于对应显示面板的第一像素区域100内不设置所述第二驱动电路21，因此不会影响所述第一像素区域100的透光性。\n\n[0088]本申请还提供一种显示装置，如图11所示，所述显示装置包括如上所述的显示面板，以及背光模组4和传感器组件5。所述背光模组4对应第一像素区域100设有通孔41，所述传感器组件5正对所述通孔41设置。\n\n[0089]其中，所述传感器组件5为光学式传感器，可以实现面部识别、距离感应、指纹识别等，此处不做限制。\n\n[0090]综上所述，本申请提供的彩膜基板及其制备方法、显示面板、显示装置，通过采用微发光二极管显示技术与液晶显示技术相结合的形式，从而可以实现LCD极致全面屏显示。又由于彩膜基板在相邻两所述Micro LED发光单元之间设有透光区，所述透光区可以允许光线穿过，因此可以实现屏内传感集成方案。另外，本申请通过将所述Micro LED发光单元集成于彩膜基板的内部，并用所述平坦层进行平整处理，因此Micro LED发光单元的绑定工艺不会对彩膜基板与阵列基板的成盒工艺造成影响，可实现屏内集成Micro LED显示方案。\n\n[0091]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10809, 23863, '技术领域\n\n[0001]本申请涉及触控技术领域，尤其涉及一种触控显示装置。\n\n背景技术\n\n[0002]电容式触摸屏由于其高耐久性以及长寿命，并且支持多点触控的功能，广泛应用于各种电子交互场景设备中。对于电容式触摸屏，触控报点率越高，则用户的触摸操作越流畅，反之，触控报点率越低，则触摸操作体验越差。\n\n[0003]因此，有必要提供一种技术方案以提高触控显示装置的报点率。\n\n发明内容\n\n[0004]本申请的目的在于提供一种触控显示装置，该触控显示装置具有高的触控报点率。\n\n[0005]为了实现上述目的，本申请提供一种所述触控显示装置包括触控层，所述触控层包括多个触控单元，每个所述触控单元包括一个沿第一方向设置的第一电极以及一个沿第二方向设置的第二电极，所述第一电极与所述第二电极电性绝缘，所述第一方向与所述第二方向相异，每个所述触控单元中，\n\n[0006]所述第一电极的电阻大于0欧姆且小于或等于50欧姆，且所述第一电极的寄生电容大于0皮法且小于或等于18皮法；\n\n[0007]所述第二电极的电阻大于0欧姆且小于或等于50欧姆，且所述第二电极的寄生电容大于0皮法且小于或等于18皮法。\n\n[0008]在上述触控显示装置中，每个所述触控单元中，所述第一电极的电阻大于或等于5欧姆且小于或等于35欧姆，且所述第一电极的寄生电容大于或等于2皮法且小于或等于17皮法；\n\n[0009]所述第二电极的电阻大于或等于5欧姆且小于或等于35欧姆，且所述第二电极的寄生电容大于或等于2皮法且小于或等于17皮法。\n\n[0010]在上述触控显示装置中，所述触控显示装置还包括第一引线、第二引线以及触控芯片，所述第一引线与每个所述触控单元的所述第一电极电性连接，所述第二引线与每个触控单元的所述第二电极电性连接，所述第一引线以及所述第二引线与所述触控芯片电性连接，每个所述第一引线和每个所述第二引线的电阻均大于0欧姆且小于或等于2500欧姆。\n\n[0011]在上述触控显示装置中，每个所述触控单元中，\n\n[0012]所述第一电极的电阻大于或等于8欧姆且小于或等于30欧姆，且所述第一电极的寄生电容大于或等于5皮法且小于或等于13皮法；\n\n[0013]所述第二电极的电阻大于或等于8欧姆且小于或等于30欧姆，且所述第二电极的寄生电容大于或等于5皮法且小于或等于13皮法；\n\n[0014]每个所述第一引线和每个所述第二引线的电阻大于或等于100欧姆且小于或等于2000欧姆。\n\n[0015]在上述触控显示装置中，每个所述第一引线和每个所述第二引线的电阻大于或等于200欧姆且小于或等于2200欧姆。\n\n[0016]在上述触控显示装置中，每个所述触控单元中的所述第一电极和所述第二电极之间形成节点互电容，所述节点互电容充电至预设电压的时间小于或等于阈值时长。\n\n[0017]在上述触控显示装置中，所述触控显示装置还包括触控芯片，所述预设电压与输入电压的比值百分数为90%-100%，所述阈值时长小于或等于1.5微秒且大于0微秒，所述输入电压由所述触控芯片输出至所述触控单元。\n\n[0018]在上述触控显示装置中，所述预设电压与所述输入电压的比值百分数为95%，所述阈值时长为1.35微秒。\n\n[0019]在上述触控显示装置中，沿所述第一方向上同排设置的所述触控单元的数目大于沿所述第二方向同排设置的所述触控单元的数目，所述第一电极的寄生电容小于所述第二电极的寄生电容。\n\n[0020]在上述触控显示装置中，每个所述触控单元中，所述第一电极的面积小于所述第二电极的面积。\n\n[0021]在上述触控显示装置中，所述第一电极包括沿所述第一方向延伸的第一主干电极以及由所述第一主干电极延伸出的至少一个第一分支电极；\n\n[0022]所述第二电极包括沿所述第二方向延伸的第二主干电极以及由所述第二主干电极延伸出的至少一个第二分支电极。\n\n[0023]在上述触控显示装置中，所述第一主干电极内设置有浮置电极，和/或，至少一个所述第一分支电极内设置有浮置电极，和/或，所述第二主干电极内设置有浮置电极，和/或，至少一个所述第二分支电极内设置有浮置电极，所述浮置电极与所述第一电极以及所述第二电极电性绝缘。\n\n[0024]在上述触控显示装置中，至少一个所述第一分支电极内设置有所述浮置电极，和/或，至少一个所述第二分支电极内设置有所述浮置电极。\n\n[0025]在上述触控显示装置中，所述第二电极还包括第一连接分支电极，所述第一连接分支电极的一端连接所述第二主干电极，且所述第一连接分支电极的另一端连接所述第二分支电极，每个所述触控单元的所述第一连接分支电极、所述第二主干电极以及所述第二分支电极围合的区域设置有浮置电极，所述浮置电极与所述第一电极以及所述第二电极电性绝缘。\n\n[0026]在上述触控显示装置中，所述第二电极还包括第二连接分支电极，所述第二连接分支电极的一端连接所述第二分支电极，所述第二连接分支电极的另一端与所述第二方向上相邻所述触控单元的所述第二连接分支电极连接，同一个所述触控单元中的所述第一连接分支电极、所述第二连接分支电极、第二分支电极以及所述第二主干电极围合的区域设置有浮置电极。\n\n[0027]在上述触控显示装置中，所述第二分支电极由所述第二主干电极靠近所述第二主干电极与所述第一主干电极交叉的一端延伸出，在所述第二方向上相邻两个所述触控单元的相邻两个所述第二分支电极远离与所述第二主干电极连接的一端的另一端连接，在所述第二方向上相邻两个所述触控单元的相邻两个所述第二分支电极以及相邻两个第二主干电极围合的区域内设置有浮置电极，所述浮置电极与所述第一电极以及所述第二电极电性绝缘。\n\n[0028]在上述触控显示装置中，在靠近所述第一电极和所述第二电极交叉位置处，所述第一主干电极和所述第二主干电极中的至少一者设置有加宽部。\n\n[0029]在上述触控显示装置中，所述触控显示装置还包括显示面板，所述触控层位于所述显示面板的一侧，所述显示面板包括有机发光二极管阵列层以及封装层，所述封装层位于所述触控层和所述有机发光二极管阵列层之间，所述封装层的厚度为5微米-15微米。\n\n[0030]有益效果：本申请提供一种触控显示装置，触控显示装置包括触控层，触控层包括多个触控单元，每个触控单元包括一个第一电极以及一个第二电极，第一电极与第二电极电性绝缘，每个触控单元中，第一电极的电阻大于0欧姆且小于或等于50欧姆，且第一电极的寄生电容大于0皮法且小于或等于18皮法；第二电极的电阻大于0欧姆且小于或等于50欧姆，且第二电极的寄生电容大于0皮法且小于或等于18皮法。通过同时对每个触控单元中第一电极的电阻和寄生电容以及每个触控单元中第二电极的电阻和寄生电容进行优化，以降低每个触控单元中第一电极和第二电极之间的节点互电容充电至预设阈值电压所需时间，从而提高触控显示装置的触控报点率。\n\n附图说明\n\n[0031]图1为本申请触控显示装置的示意图；\n\n[0032]图2为图1所示触控层的示意图；\n\n[0033]图3为图1所示触控显示装置的触控层的第一种架构示意图；\n\n[0034]图4为图1所示触控显示装置的触控层的第二种架构示意图；\n\n[0035]图5A为本申请实施例触控单元1的示意图；\n\n[0036]图5B为本申请实施例触控单元2的示意图；\n\n[0037]图5C为本申请实施例触控单元3的示意图；\n\n[0038]图6A为本申请实施例触控单元4的示意图；\n\n[0039]图6B为本申请实施例触控单元5的示意图；\n\n[0040]图6C为本申请实施例触控单元6的示意图；\n\n[0041]图6D为本申请实施例触控单元7的示意图；\n\n[0042]图7A为本申请实施例触控单元8的示意图；\n\n[0043]图7B为对比例3的触控单元的示意图。\n\n具体实施方式\n\n[0044]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0045]本申请提供一种触控显示装置，触控显示装置可以为柔性触控显示装置，触控显示装置也可以为硬质触控显示装置。触控显示装置包括触控层以及显示面板。触控层位于显示面板的一侧。\n\n[0046]触控层包括多个阵列排布的触控单元，每个触控单元包括一个沿第一方向设置的第一电极以及一个沿第二方向设置的第二电极，第一电极与所述第二电极电性绝缘，第一电极和第二电极组成互容式触控电极，第一方向与第二方向相异。\n\n[0047]每个触控单元中，第一电极的电阻大于0欧姆且小于或等于50欧姆，且第一电极的寄生电容大于0皮法且小于或等于18皮法；第二电极的电阻大于0欧姆且小于或等于50欧姆，且第二电极的寄生电容大于0皮法且小于或等于18皮法。通过优化每个触控单元中的第一电极的电阻的参数、第一电极的寄生电容的参数、第二电极的电阻的参数以及第二电极的寄生电容的参数，以降低每个触控单元中节点互电容充电至预设电压的时间，从而提高触控显示装置的触控报点率。\n\n[0048]在一些实施例中，每个触控单元中，第一电极的电阻大于或等于5欧姆且小于或等于35欧姆，且第一电极的寄生电容大于或等于2皮法且小于或等于17皮法；第二电极的电阻大于或等于5欧姆且小于或等于35欧姆，且第二电极的寄生电容大于或等于2皮法且小于或等于17皮法。\n\n[0049]在一些实施例中，每个触控单元中，第一电极的电阻大于或等于8欧姆且小于或等于25欧姆，且第一电极的寄生电容大于或等于5皮法且小于或等于12皮法；第二电极的电阻大于或等于8欧姆且小于或等于25欧姆，且第二电极的寄生电容大于或等于5皮法且小于或等于12皮法。\n\n[0050]每个触控单元中，第一电极的电阻可以为2欧姆、4欧姆、8欧姆、12欧姆、16欧姆、20欧姆、24欧姆、28欧姆、32欧姆、36欧姆、40欧姆、44欧姆或48欧姆；第一电极的寄生电容可以为2皮法、4皮法、6皮法、8皮法、10皮法、12皮法、14皮法或16皮法；第二电极的电阻可以为2欧姆、4欧姆、8欧姆、12欧姆、16欧姆、20欧姆、24欧姆、28欧姆、32欧姆、36欧姆、40欧姆、44欧姆或48欧姆；第二电极的寄生电容为2皮法、4皮法、6皮法、8皮法、10皮法、12皮法、14皮法或16皮法。\n\n[0051]在一些实施例，触控显示装置还包括第一引线、第二引线以及触控芯片，第一引线与每个触控单元的第一电极电性连接，第二引线与每个触控单元的第二电极电性连接，第一引线以及第二引线与触控芯片电性连接，每个第一引线和每个第二引线的电阻均大于0欧姆且小于或等于2500欧姆。第一引线和第二引线的电阻越小，第一引线和第二引线的阻抗越小，越有利于信号的传输，降低引线的阻抗导致的阻容延时，从而减小节点互电容充电至预设电压所需时间。可以提高第一引线和第二引线的材料导电性或者增加第一引线或者第二引线的线宽以降低第一引线和第二引线的电阻，也可以通过每个第一引线和每个第二引线由多层导线组成以降低第一引线和第二引线的电阻。\n\n[0052]在一些实施例中，每个第一引线和每个第二引线的电阻大于或等于200欧姆且小于或等于2200欧姆。具体地，第一引线和第二引线的电阻可以为20欧姆、50欧姆、80欧姆、100欧姆、200欧姆、500欧姆、800欧姆、1200欧姆、1500欧姆、1800欧姆、2200欧姆以及2500欧姆。\n\n[0053]在一些实施例中，每个触控单元中，第一电极的电阻大于或等于8欧姆且小于或等于30欧姆，且第一电极的寄生电容大于或等于5皮法且小于或等于13皮法；\n\n[0054]第二电极的电阻大于或等于8欧姆且小于或等于30欧姆，且第二电极的寄生电容大于或等于5皮法且小于或等于13皮法；\n\n[0055]每个第一引线和每个第二引线的电阻大于或等于100欧姆且小于或等于2000欧姆。通过第一电极的电阻、第一电极的寄生电容、第二电极的电阻、第二电极的寄生电容、第一引线的电阻以及第二引线的电阻的优化且相互配合，以降低节点互电容充电至预设电压的所需时间。\n\n[0056]在一些实施例中，每个所述触控单元中的所述第一电极和所述第二电极形成节点互电容，节点互电容充电至预设电压的时间小于或等于阈值时长，以减小节点互电容的充电时间，从而缩短互容扫描耗时，提高触控报点率。阈值时长越小，越有利于提高触控报点率。\n\n[0057]在一些实施例中，触控显示装置还包括触控芯片，预设电压与输入电压的比值百分数为90%-100%，阈值时长小于或等于1.5微秒且大于0微秒，输入电压由触控芯片输出至触控单元。预设电压用于保证触控单元能正常工作，保证基本的触控性能。预设电压与输入电压的比值百分数可以为90%、92%、95%、97%、98%以及100%。阈值时长可以为0.4微秒、0.5微秒、0.55微秒、0.65微秒、0.7微秒、0.9微秒、1.0微秒、1.2微秒、1.25微秒、1.35微秒、1.5微秒。\n\n[0058]在一些实施例中，预设电压与输入电压的比值百分数为95%，阈值时长为1.35微秒。\n\n[0059]触控显示装置的触控芯片通常需要工作在信号满足节点互电容充电至预设电压所需时间小于或等于t的状况，如果信号无法满足充电至预设电压的时间要求，则相应的驱动信号波形存在失真，将影响信号的检测以及触控性能，t为互容节点充电至预设电压的时间。\n\n[0060]在一些实施例中，沿第一方向上同排设置的触控单元的数目大于沿第二方向同排设置的触控单元的数目，第一电极的寄生电容小于第二电极的寄生电容。\n\n[0061]当第一方向上同排设置的触控单元的数目大于第二方向上同排设置触控单元的数目时，第一方向上同排设置的第一电极的数目会大于第二方向上同排设置的第二电极的数目，通过使第一电极的寄生电容小于第二电极的寄生电容，以减少第一方向上同排设置的第一电极形成的第一电极通道的寄生电容，更有利于电信号在第一电极通道上的传输，特别是，第一电极为驱动电极时，驱动电极用于输入扫描信号时，更加有利于降低3RC时间常数。\n\n[0062]在一些实施例中，每个触控单元中，第一电极的面积小于第二电极的面积，以使得每个触控单元中第一电极的寄生电容小于第二电极的寄生电容。\n\n[0063]在一些实施例中，第一电极包括沿第一方向延伸的第一主干电极以及由第一主干电极延伸出的至少一个第一分支电极；\n\n[0064]第二电极包括沿第二方向延伸的第二主干电极以及由第二主干电极延伸出的至少一个第二分支电极。\n\n[0065]第一主干电极沿第一方向延伸，且主要用于传导与第一方向平行的电流，第一分支电极主要用于与第二分支电极之间形成互电容，以调整触控感应量。\n\n[0066]第二主干电极与第一主干电极的作用基本相同，第二分支电极与第一分支电极的作用基本相同。第一分支电极与第一主干电极之间的夹角大于0度且小于90度，例如可以为30度、40度、45度、50度、60度、70度以及80度等。第二分支电极与第二主干电极之间的夹角大于0度且小于90度，例如可以为30度、40度、45度、50度、60度、70度以及80度。具体地，第一分支电极与第一主干电极之间的夹角等于45度，第二分支电极与第二主干电极之间的夹角等于45度。\n\n[0067]在一些实施例中，第一主干电极内设置有浮置电极，和/或，至少一个第一分支电极内设置有浮置电极，和/或，第二主干电极内设置有浮置电极，和/或，至少一个第二分支电极内设置有浮置电极，浮置电极与第一电极以及第二电极电性绝缘。通过在第一主干电极以及第一分支电极中的至少一者内设置浮置电极，以降低第一电极的面积，从而降低第一电极的寄生电容。且通过在第二主干电极以及第二分支电极中的至少一者内设置浮置电极，以降低第二电极的面积，从而降低第二电极的寄生电容。\n\n[0068]在一些实施例中，至少一个第一分支电极内设置有浮置电极，和/或，至少一个第二分支电极内设置有浮置电极。通过在第一分支电极和第二分支电极中的一者内设置浮置电极，而不在第一主干电极以及第二主干电极内设置浮置电极，以减小第一电极和/或第二电极的面积从而减小第一电极和第二电极的寄生电容的同时，保证第一电极和/或第二电极的电阻。因为在分支电极内设置浮置电极不会对电极的电阻造成较大影响，而在主干电极内设置浮置电极会导致电极的电阻增大。\n\n[0069]在一些实施例中，第二电极还包括第一连接分支电极，第一连接分支电极的一端连接第二主干电极，且第一连接分支电极的另一端连接第二分支电极，每个触控单元的第一连接分支电极、第二主干电极以及第二分支电极围合的区域设置有浮置电极，浮置电极与第一电极以及第二电极电性绝缘。在一个触控单元内，在第二分支电极和第二主干电极之间增加第一连接分支电极可以增加电流在第二电极上传导的电流传输通道，从而降低第二电极的电阻，从而降低节点互电容充电至预设电压所需时间。另外，每个触控单元的第一连接分支电极、第二主干电极以及第二分支电极围合的区域设置有浮置电极，可以减少第二电极的面积，从而减少第二电极的寄生电容，进一步地降低节点互电容充电至预设电压所需时间。\n\n[0070]在一些实施例中，第二电极还包括第二连接分支电极，第二连接分支电极的一端连接第二分支电极，第二连接分支电极的另一端与第二方向上相邻触控单元的第二连接分支电极连接，同一个触控单元中的第一连接分支电极、第二连接分支电极、第二分支电极以及第二主干电极围合的区域设置有浮置电极。通过设置第二连接分支电极以增加相邻两个触控单元的相邻两个第二电极的电流传输通道，从降低第二电极通道的阻抗，降低节点互电容充电至预设电压所需时间。且通过在同一个触控单元中的第一连接分支电极、第二连接分支电极、第二分支电极以及第二主干电极围合的区域设置有浮置电极，以进一步地减小第二电极的寄生电容。\n\n[0071]在一些实施例中，第二分支电极由第二主干电极靠近第二主干电极与第一主干电极交叉的一端延伸出，在第二方向上相邻两个触控单元的相邻两个第二分支电极远离与第二主干电极连接的一端的另一端连接，在第二方向上相邻两个触控单元的相邻两个第二分支电极以及相邻两个第二主干电极围合的区域内设置有浮置电极。通过使相邻两个触控单元的第二分支电极在第二方向连接，以增加电流在第二电极通道上的传输路径，从而降低第二电极通道的阻抗，减少节点互电容充电至预设电压所需时间。且通过在第二方向上相邻两个触控单元的相邻两个第二分支电极以及相邻两个第二主干电极围合的区域内设置有浮置电极，以降低第二电极的寄生电容。\n\n[0072]在一些实施例中，在靠近第一电极和第二电极交叉位置处，第一主干电极和第二主干电极中的至少一者设置有加宽部，以降低第一电极和第二电极中至少一者在靠近交叉位置处的电阻，从而减小节点互电容充电至预设电压所需时间。\n\n[0073]在一些实施例中，触控显示装置还包括显示面板，触控层位于所述显示面板的一侧，显示面板包括有机发光二极管阵列层以及封装层，封装层位于触控层和有机发光二极管阵列层之间，封装层的厚度为5微米-15微米。例如封装层的厚度为6微米、8微米、10微米、12微米、14微米。通过调节封装层的厚度以调节有机发光二极管阵列层的共阴极与触控层中第一电极和第二电极之间的寄生电容，封装层的厚度越大，寄生电容越小。\n\n[0074]在一些实施例中，封装层包括有机层，有机层的厚度为6微米-12微米。例如有机层的厚度为6微米、8微米、10微米以及11微米。\n\n[0075]需要说明的是，第一电极和第二电极的寄生电容主要来源于与共阴极之间的寄生电容，共阴极与第一电极以及第二电极之间的间距取决于封装层的厚度。触控芯片对节点互电容进行充电时，同时对寄生电容进行充电，当寄生电容越大时，将目标节点互电容充电到满足电信号检测的状态，例如充电至预设电压时，所需的扫描时间越长，因此相应的触控报点率会下降。\n\n[0076]在一些实施例中，第一电极为驱动电极，且第二电极为感应电极。\n\n[0077]在一些实施例中，第一电极以及第二电极均由金属网格组成。组成金属网格的金属线环绕子像素。\n\n[0078]以下对本申请的一些概念进行解释。\n\n[0079]节点互电容：每个触控单元中，第一电极和第二电极形成一个节点互电容，节点互电容包括第一电极和第二电极的边界之间形成的互电容以及第一电极和第二电极之间交叠部分形成的基础电容。一般而言，第一电极和第二电极的边界之间形成的互电容控制在合适的范围才有利于保证触控的信号量，从而提高触控灵敏度等触控性能，第一电极和第二电极之间交叠部分形成的基础电容越小，越有利于提高触控报点率。触控芯片对驱动电极进行电信号扫描驱动时，相当于对相应的驱动电极与感应电极在交叉位置处形成的节点互电容进行充放电，触控芯片通过接收手指触摸时相应的节点电容的改变来检测手指触摸的位置。\n\n[0080]3RC Settling time（3RC时间常数）是输出信号达到输入信号95%幅值状态的一个时间常数，该时间常数由触摸屏屏体本身的电阻、电容的大小以及分布来决定，其中，输入信号为由触控芯片输出至驱动电极的电压，输出信号是写入至节点互电容的电压。当触摸屏屏体设计确定后，则相应的触摸屏屏体上每个节点互电容的3RC时间常数确定。通常触摸屏屏体上节点互电容充电至输入信号95%幅值所需时间最长的节点互电容如果能满足预设的3RC时间常数，则其他节点互电容的信号亦可以满足预设的3RC时间常数，因此触摸屏的报点率通常由屏体上节点互电容充电至输入信号95%幅值所需时间最长的节点互电容的3RC时间常数来决定。\n\n[0081]触控报点率：触控报点率等于触控一帧耗时（单位：秒）的倒数，通常触控的一帧耗时包括自容扫描时间、互容扫描时间、自互容切换时间和复位时间，其中占据触控一帧耗时的绝大部分是互容扫描耗时，互容切换时间和复位时间通常由触控芯片决定。互容扫描所需时间通常在触控芯片扫描频率满足的条件下，由屏体本身的3RC时间常数来决定。\n\n[0082]以下结合具体实施例对上述方案进行详述。\n\n[0083]第一实施例\n\n[0084]请参阅图1，其为本申请触控显示装置的示意图。触控显示装置包括有机发光二极管显示面板10、触控层20、偏光片30以及保护盖板40。\n\n[0085]有机发光二极管显示面板10包括基板100、薄膜晶体管阵列层101、有机发光二极管阵列层102以及封装层103。\n\n[0086]基板100为柔性基板。薄膜晶体管阵列层101设置于基板100上，薄膜晶体管阵列层101包括多个阵列排布的薄膜晶体管。有机发光二极管阵列层102设置于薄膜晶体管阵列层101远离基板100的一侧。有机发光二极管阵列层102包括多个阵列排布的有机发光二极管，多个有机发光二极管包括多个独立的阳极、设置于每个阳极上的有机发光层以及一个共阴极，即多个有机发光二极管共用一个共阴极，共阴极为一个整面的金属导电层。每个有机发光二极管构成一个子像素。子像素包括红光子像素、蓝光子像素以及绿光子像素。封装层103用于保护有机发光二极管阵列层102中的有机层以及共阴极，避免有机层以及共阴极为水蒸气以及氧气等侵蚀。封装层103设置于有机发光二极管阵列层102远离薄膜晶体管阵列层101的一侧。封装层103可以为薄膜封装层，薄膜封装层包括两个无机层以及设置于两个无机层之间的有机层。\n\n[0087]请参阅图2，其为图1所示触控层的示意图。触控层20包括缓冲层201、第二连接部202、第一钝化层203、第一电极204、第二电极205以及第二钝化层206。缓冲层201为绝缘层，缓冲层201的制备材料选自氮化硅以及氧化硅中的至少一种。第二连接部202设置于缓冲层201上，第二连接部202具有导电性，第二连接部202为两条间隔设置的V形桥接线。第一钝化层203覆盖第二连接部202以及缓冲层201。第一钝化层203的制备材料选自氮化硅以及氧化硅中的至少一种。第一电极204以及第二电极205设置于第一钝化层203上，且第一电极204与第二电极205之间电性绝缘，第一电极204通过第一连接部（未示出）连接，第一电极204与第一连接部同层设置且连续形成。第二钝化层206覆盖第一电极204以及第二电极205。相邻两个第二电极205通过第二连接部202连接，每个第二电极205通过第一钝化层203上的过孔与第二连接部202连接。\n\n[0088]在本实施例中，第一电极204、第二电极205、第二连接部202以及第一连接部组成触控电极。第二连接部202和第一电极204之间的交叠部分形成基础电容。第一电极204、第二电极205、第二连接部202以及第一连接部均由金属网格组成。金属网格环绕有机发光二极管阵列层的子像素设置，以避免对子像素的光造成遮挡。\n\n[0089]第二实施例\n\n[0090]请参阅图3，其为图1所示触控显示装置的触控层的第一种架构示意图。在第一方向上同排设置的多个触控单元207的第一电极204电性连接以形成一个第一电极通道，在第二方向上同排设置的多个触控单元207的第二电极205电性连接以形成一个第二电极通道。每个第一电极通道的两端与第一引线208连接，每个第二电极通道的一端与第二引线209连接，即触控层采用2T1R架构。\n\n[0091]在本实施例中，第一电极为驱动电极，第二电极为感应电极。在第二方向上有17个第一电极通道，在第一方向上有37个第二电极通道，其中，第1个第二电极通道至第37个第二电极通道依次排列且第37个第二电极通道距离触控芯片最远。以在第二方向上的4个第一电极通道为一组进行扫描，例如第1个至第4个第一电极通道为一组进行扫描，第5个至第8个第一电极通道为一组进行扫描，第9个至第12个第一电极通道为一组进行扫描，第13个至第16个第一电极通道为一组进行扫描，第17个第一电极通道为一组进行扫描。每组第一电极通道扫描四次，每次扫描对应输入一组波形，每一组波形包含48个标准方波，故扫描完一个完整的触控显示装置所需的互容扫描时间为5×4×48×2×t，其中，一个标准方波对应的时间为2×t，t为节点互电容充电至输入电压的95%时所需最长时间。\n\n[0092]在本实施例，触控层上充电至输入电压95%所需时间最长的节点互电容M位于距离触控层中间的位置，例如第1个第一电极通道和第19个第二电极通道交叉处的节点互电容。\n\n[0093]屏体互容扫描时间主要包括N组互容扫描波形构成，N组互容扫描波形的时间构成整个互容扫描时段，当屏体的通道数确定后，通常N与屏体的第一电极通道的数目以及第一电极通道的驱动分组相关。\n\n[0094]第三实施例\n\n[0095]请参阅图4，其为图1所示触控显示装置的触控层的第二种架构示意图。图4所示触控层与图3所示触控层基本相似，图4与图3所示触控层的架构不同之处在于，每个第一电极通道的一端与第一引线208连接，每个第二电极通道的一端与第二引线209连接，即触控层采用1T1R架构。本实施例第一电极和第二电极的排布设计与图3所示触控层相同，分组扫描的方式也与第二实施例相同。\n\n[0096]在本实施例中，触控层上充电至输入电压95%所需时间最长的节点互电容M位于距离触控芯片输入信号远端的位置，例如位于第1个第一电极通道和第37个第二电极通道交叉。\n\n[0097]第四实施例以及对比例1\n\n[0098]本实施例以及对比例1旨在研究降低感应电极的电阻、寄生电容以及感应电极通道的电阻对节点互电容充电至输入电压的95%所需时间的影响，触控单元1-3以及对比例1的仿真结果如表1。\n\n[0099]如图5A所示，其为本申请实施例触控单元1的示意图。触控单元1包括第一电极204以及第二电极205。第一电极204包括第一主干电极2041以及第一分支电极2043，第一分支电极2043由第一主干电极2041在第一电极204与第二电极205交叉的位置处延伸出，第一主干电极2041向第一方向延伸，第一分支电极2043与第一主干电极2041之间的夹角等于45度。第二电极205包括第二主干电极2051以及第二分支电极2053，第二分支电极2053由第二主干电极2051在第一电极204和第二电极205交叉处延伸出，且第二分支电极2053与第二主干电极2051之间的夹角等于45度。每个第二分支电极2053包围与第二分支电极2053相邻的一个第一分支电极2043。在第二方向上相邻两个触控单元的相邻两个第二分支电极2053连接。在第二方向上相邻两个触控单元的第二主干电极2051、第二分支电极2053围合的区域设置有浮置电极206，在第二方向上相邻两个触控单元的第二主干电极2051、第二分支电极2053围合的区域设置的浮置电极206的面积与每个第二分支电极2053的面积的比值为4：5，浮置电极206与第一电极204以及第二电极205之间电性绝缘。在第一方向上相邻两个触控单元的相邻两个第一主干电极、相邻两个第二分支电极2053围合的区域设置有浮置电极206，以避免第一方向上相邻两个触控单元的相邻两个第二分支电极2053断开且避免两者之间短路。\n\n[0100]如图5B所示，其为本申请实施例触控单元2的示意图。图5B所示触控单元2与图5A所示触控单元1基本相似，不同之处在于，在第二方向上相邻两个触控单元的第二主干电极2051、第二分支电极2053围合的区域设置有浮置电极206的面积与每个第二分支电极2053的面积的比值为1：10。\n\n[0101]如图5C所示，其为本申请实施例触控单元3的示意图。图5C所示触控单元3与图5A所示触控单元1基本相似，不同之处在于，第二电极205包括第一连接分支电极2054以及第二连接分支电极2055，第一连接分支电极2054的一端连接第二主干电极2051，且第一连接分支电极2054的另一端连接第二分支电极2053，每个触控单元的第一连接分支电极2054、第二主干电极2051以及第二分支电极2053围合的区域设置有浮置电极206。第二连接分支电极2055的一端连接第二分支电极2053，第二连接分支电极2053的另一端与第二方向上相邻触控单元的第二连接分支电极2053连接，同一个触控单元中的第一连接分支电极2054、第二连接分支电极2055、第二分支电极2053以及第二主干电极2051围合的区域设置有浮置电极206。\n\n[0102]对比例1的触控单元与图5A所示触控单元基本相似，不同之处在于，对比例1的触控单元在第二方向上相邻两个触控单元的第二主干电极2051、第二分支电极2053围合的区域不设置有浮置电极206。\n\n[0103]\n\n[0104]其中，Unit Cs_Tx为触控单元中第一电极的寄生电容，Unit Cs_Rx为触控单元中第二电极的寄生电容，Unit R_Tx为触控单元中第一电极的电阻，Unit R_Rx为触控单元中第二电极的电阻，R_Rx为与触控层上充电至输入电压的95%所需时间最长的节点互电容连接的第二引线209的电阻，3RC时间常数为节点互电容充电至输入电压的95%所需最长的时间。\n\n[0105]上述触控单元1-3以及对比例1均采用第二实施例的触控层驱动架构。在自互容切换时间、自容耗时以及复位耗时均相同时，触控单元1-3的3RC时间常数均小于对比例1的3RC时间常数，触控单元1-3的3RC时间常数均小于1.35微秒，触控单元1-3的触控报点率大于对比例1的触控报点率，触控单元1-3的最大触控报点率为264Hz，触控单元1-3的触控报点率相对于对比例1的触控报点率至少提高了11.11%。主要原因在于触控单元1-3的第二电极205的寄生电容小于对比例1的第二电极205的寄生电容。触控单元3的3RC时间常数较小，主要原因在于触控单元3包括第一连接分支电极2054以及第二连接分支电极2055，增加了第二电极205的电流传输通道，从而降低了第二电极205的电阻，降低第二电极205的电阻有利于降低节点互电容充电至输入电压95%所需时间。触控单元2的3RC时间常数和触控单元1的3RC时间常数相同，主要原因在于触控单元1的第二电极205的寄生电容明显小于触控单元2的第二电极205的寄生电容，而触控单元1的第一电极204的寄生电容稍大于触控单元2的第一电极204的寄生电容，然而第一电极204作为输入扫描信号的驱动电极，第一电极204的寄生电容的减小比第二电极205的寄生电容的减少更加有利于减少3RC时间常数，当然，第二电极205的寄生电容较小也有利于降低3RC时间常数。\n\n[0106]需要说明的是，在触控单元1采用第二实施例的触控层驱动架构时，3RC 时间常数为1.326微秒，触控芯片输出的互容扫描波形频率设置为377KHz。\n\n[0107]第五实施例以及对比例2\n\n[0108]本实施例以及对比例2旨在研究触控单元中驱动电极以及感应电极内设置浮置电极对驱动电极以及感应电极的电阻以及寄生电容的影响，且研究驱动电极以及感应电极的电阻以及寄生电容对应节点互电容充电至输入电压的95%所需时间（3RC 时间常数）的影响，触控单元4-7以及对比例2经过模拟仿真的数据如表2。\n\n[0109]如图6A所示，其为本申请实施例触控单元4的示意图。触控单元4包括第一电极204以及第二电极205，第一电极204包括第一主干电极2041、第一垂直主干电极2042以及第一分支电极2043，第一主干电极2041与第一垂直主干电极2042之间相互垂直，第一分支电极2043由第一主干电极2041以及第一垂直主干电极2042延伸出，且第一主干电极2041延伸出的第一分支电极2043与第一主干电极2041之间的夹角等于45度，第一垂直主干电极2042延伸出的第一分支电极2043与第一垂直主干电极2042之间的夹角等于45度。第二电极205包括第二主干电极2051、第二垂直主干电极2052以及第二分支电极2053，第二主干电极2051与第二垂直主干电极2052之间相互垂直，第二分支电极2053由第二主干电极2051以及第二垂直主干电极2052延伸出，由第二主干电极2051延伸出的第二分支电极2053与第二主干电极2051之间的夹角等于45度，由第二垂直主干电极2052延伸出的第二分支电极2053与第二垂直主干电极2052之间的夹角等于45度。第一电极204和第二电极205的交叉位置处两个第一主干电极2041通过两对间隔设置的V形桥接线连接。第一电极204和第二电极205的交叉位置处两个第二主干电极2051通过连接部连接，连接部与第一电极204以及第二电极205同层设置。第一电极204以及第二电极205均关于第一主干电极2041以及第二主干电极2051对称设置。第一分支电极2043和与第一分支电极2043相邻的第二分支电极2053平行。部分第一分支电极2043与部分第二分支电极2053交叉设置。第一分支电极2043包括第一加宽部以及与第一加宽部对应的第一连接部，第二分支电极2053包括第二加宽部以及与第二加宽部对应的第二连接部。第一分支电极2043的第一加宽部与相邻的第二分支电极2053的第二连接部对应设置，第一分支电极2043的第一连接部与相邻的第二分支电极2053的第二加宽部对应设置。\n\n[0110]如图6B所示，其为本申请实施例触控单元5的示意图。触控单元5与触控单元4基本相似，不同之处在于，第一分支电极2043以及第二分支电极2053内均设置有浮置电极206，第一主干电极2041以及第二主干电极2051内未设置浮置电极206，浮置电极206与第一电极204以及第二电极205电性绝缘，浮置电极206不载入电信号。\n\n[0111]如图6C所示，其为本申请实施例触控单元6的示意图。触控单元6与触控单元5基本相似，不同之处在于，第一主干电极2041以及第二主干电极2051内设置有浮置电极206，第一分支电极2043以及第二分支电极2053内不设置浮置电极206，第一主干电极2041的面积与第一主干电极2041内的浮置电极206的面积的比值为7：3，第二主干电极2051的面积与第二主干电极2051内的浮置电极206的面积的比值为7：3，第一主干电极2041的面积不包括浮置电极206的面积，第二主干电极2051的面积不包括浮置电极206的面积。\n\n[0112]如图6D所示，其为本申请实施例触控单元7的示意图。触控单元7与触控单元5基本相似，不同之处在于，第一主干电极2041、第二主干电极2051、第一分支电极2043以及第二分支电极2053内均设置有浮置电极206，第一主干电极2041的面积与第一主干电极2041内的浮置电极206的面积的比值为7：3，第二主干电极2051的面积与第二主干电极2051内的浮置电极206的面积的比值为7：3，其中，第一主干电极2041的面积不包括浮置电极206的面积，第二主干电极2051的面积不包括浮置电极206的面积。\n\n[0113]对比例2的触控单元与图6C所示触控单元基本相似，不同之处在于，对比例2中的触控单元中，第一主干电极2041的面积与第一主干电极2041内的浮置电极206的面积的比值为5：5，第二主干电极2051的面积与第二主干电极2051内的浮置电极206的面积的比值为5：5。\n\n[0114]\n\n[0115]触控单元4-7以及对比例2采用图4所示触控层的触控架构示意图。由表2可知，触控单元4-7的3RC时间常数小于对比例2的3RC时间常数，且触控单元4-7的3RC时间常数均小于1.5微秒。主要原因在于，对比例2的第一电极204的第一主干电极2041以及第二电极205的第二主干电极2051中浮置电极206较多，导致第一电极204和第二电极205的阻抗较大，尽管第一电极204以及第二电极205的寄生电容较小，但是由于第一电极204以及第二电极205的阻抗较大对节点互电容充电的不利影响超过第一电极204和第二电极205的寄生电容较小对节点互电容充电的有利影响，导致对比例2的3RC时间常数高达1.605微秒。触控单元4的3RC时间常数大于触控单元5的3RC时间常数，主要原因在于触控单元5在第一分支电极2043和第二分支电极2053内设置有浮置电极206，减小第一电极204以及第二电极205的面积，从而使得第一电极204和第二电极205的寄生电容减小，第一分支电极2043以及第二分支电极2053的面积减小不会影响第一电极204以及第二电极205的电阻。触控单元6的3RC时间常数大于触控单元4的3RC时间常数，主要原因在于，触控单元6的第一主干电极2041以及第二主干电极2051内设置有浮置电极206，减少第一电极204和第二电极205的面积以降低第一电极204和第二电极205的寄生电容的同时，第一主干电极2041和第二主干电极2051的电阻增大，第一主干电极2041和第二主干电极2051主要用于传导电流，第一电极204和第二电极205的阻抗增大，导致3RC时间常数较大。触控单元7的3RC时间常数小于触控单元6的3RC时间常数，主要原因在于，触控单元7的第一分支电极2043以及第二分支电极2053内均设置有浮置电极206，分支电极中设置浮置电极206使得第一电极204和第二电极205的寄生电容更小，从而使得3RC时间常数更小。\n\n[0116]第六实施例以及对比例3\n\n[0117]本申请实施例以及对比例3旨在研究在第一电极以及第二电极的交叉位置处增设加宽部对电阻的影响，且研究电阻降低对节点互电容充电至输入电压的95%所需时间（3RC时间常数）的影响，触控单元8以及对比例3经过模拟仿真的数据如表3。\n\n[0118]如图7A所示，其为本申请实施例触控单元8的示意图。触控单元8包括第一电极204以及第二电极205。第一电极204包括两个第一等腰直角三角形电极，第二电极205包括两个第二等腰直角三角形电极，第一电极204的两个第一等腰直角三角形电极在第一方向上电性连接，第二电极的两个第二等腰直角三角形电极在第二方向上电性连接。第一等腰直角三角形电极的相邻两个边缘上且靠近第一电极204和第二电极205交叉位置处设置有内陷部204a，第二等腰直角三角形电极的对应边缘上设置有凸起部205a，每个内陷部204a与每个凸起部205a相互配合。在本实施例中，第一电极204为驱动电极，第二电极205为感应电极。\n\n[0119]如图7B所示，其为对比例3的示意图。对比例3的触控单元与触控单元8基本相似，不同之处在于，对比例3的触控单元上未设置内陷部204a以及凸起部205a。\n\n[0120]\n\n[0121]触控单元8以及对比例3的触控单元采用如图3所示的触控架构。触控单元8的3RC时间常数小于对比例3的3RC时间常数，主要原因在于，触控单元8中第二电极205在靠近第一电极204和第二电极205交叉的位置设置有凸起部205a，使得第二电极205的主干电极的宽度在靠近第一电极204和第二电极205交叉位置处增加，从而使得第二电极205的电阻较小，而在第一电极204上设置内陷部204a，不会明显影响第一电极204的主干电极的电阻，第二电极205的电阻减小使得触控单元8的3RC时间常数较小。\n\n[0122]以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及触控技术领域，尤其涉及一种触控显示装置。\n\n背景技术\n\n[0002]电容式触摸屏由于其高耐久性以及长寿命，并且支持多点触控的功能，广泛应用于各种电子交互场景设备中。对于电容式触摸屏，触控报点率越高，则用户的触摸操作越流畅，反之，触控报点率越低，则触摸操作体验越差。\n\n[0003]因此，有必要提供一种技术方案以提高触控显示装置的报点率。\n\n发明内容\n\n[0004]本申请的目的在于提供一种触控显示装置，该触控显示装置具有高的触控报点率。\n\n[0005]为了实现上述目的，本申请提供一种所述触控显示装置包括触控层，所述触控层包括多个触控单元，每个所述触控单元包括一个沿第一方向设置的第一电极以及一个沿第二方向设置的第二电极，所述第一电极与所述第二电极电性绝缘，所述第一方向与所述第二方向相异，每个所述触控单元中，\n\n[0006]所述第一电极的电阻大于0欧姆且小于或等于50欧姆，且所述第一电极的寄生电容大于0皮法且小于或等于18皮法；\n\n[0007]所述第二电极的电阻大于0欧姆且小于或等于50欧姆，且所述第二电极的寄生电容大于0皮法且小于或等于18皮法。\n\n[0008]在上述触控显示装置中，每个所述触控单元中，所述第一电极的电阻大于或等于5欧姆且小于或等于35欧姆，且所述第一电极的寄生电容大于或等于2皮法且小于或等于17皮法；\n\n[0009]所述第二电极的电阻大于或等于5欧姆且小于或等于35欧姆，且所述第二电极的寄生电容大于或等于2皮法且小于或等于17皮法。\n\n[0010]在上述触控显示装置中，所述触控显示装置还包括第一引线、第二引线以及触控芯片，所述第一引线与每个所述触控单元的所述第一电极电性连接，所述第二引线与每个触控单元的所述第二电极电性连接，所述第一引线以及所述第二引线与所述触控芯片电性连接，每个所述第一引线和每个所述第二引线的电阻均大于0欧姆且小于或等于2500欧姆。\n\n[0011]在上述触控显示装置中，每个所述触控单元中，\n\n[0012]所述第一电极的电阻大于或等于8欧姆且小于或等于30欧姆，且所述第一电极的寄生电容大于或等于5皮法且小于或等于13皮法；\n\n[0013]所述第二电极的电阻大于或等于8欧姆且小于或等于30欧姆，且所述第二电极的寄生电容大于或等于5皮法且小于或等于13皮法；\n\n[0014]每个所述第一引线和每个所述第二引线的电阻大于或等于100欧姆且小于或等于2000欧姆。\n\n[0015]在上述触控显示装置中，每个所述第一引线和每个所述第二引线的电阻大于或等于200欧姆且小于或等于2200欧姆。\n\n[0016]在上述触控显示装置中，每个所述触控单元中的所述第一电极和所述第二电极之间形成节点互电容，所述节点互电容充电至预设电压的时间小于或等于阈值时长。\n\n[0017]在上述触控显示装置中，所述触控显示装置还包括触控芯片，所述预设电压与输入电压的比值百分数为90%-100%，所述阈值时长小于或等于1.5微秒且大于0微秒，所述输入电压由所述触控芯片输出至所述触控单元。\n\n[0018]在上述触控显示装置中，所述预设电压与所述输入电压的比值百分数为95%，所述阈值时长为1.35微秒。\n\n[0019]在上述触控显示装置中，沿所述第一方向上同排设置的所述触控单元的数目大于沿所述第二方向同排设置的所述触控单元的数目，所述第一电极的寄生电容小于所述第二电极的寄生电容。\n\n[0020]在上述触控显示装置中，每个所述触控单元中，所述第一电极的面积小于所述第二电极的面积。\n\n[0021]在上述触控显示装置中，所述第一电极包括沿所述第一方向延伸的第一主干电极以及由所述第一主干电极延伸出的至少一个第一分支电极；\n\n[0022]所述第二电极包括沿所述第二方向延伸的第二主干电极以及由所述第二主干电极延伸出的至少一个第二分支电极。\n\n[0023]在上述触控显示装置中，所述第一主干电极内设置有浮置电极，和/或，至少一个所述第一分支电极内设置有浮置电极，和/或，所述第二主干电极内设置有浮置电极，和/或，至少一个所述第二分支电极内设置有浮置电极，所述浮置电极与所述第一电极以及所述第二电极电性绝缘。\n\n[0024]在上述触控显示装置中，至少一个所述第一分支电极内设置有所述浮置电极，和/或，至少一个所述第二分支电极内设置有所述浮置电极。\n\n[0025]在上述触控显示装置中，所述第二电极还包括第一连接分支电极，所述第一连接分支电极的一端连接所述第二主干电极，且所述第一连接分支电极的另一端连接所述第二分支电极，每个所述触控单元的所述第一连接分支电极、所述第二主干电极以及所述第二分支电极围合的区域设置有浮置电极，所述浮置电极与所述第一电极以及所述第二电极电性绝缘。\n\n[0026]在上述触控显示装置中，所述第二电极还包括第二连接分支电极，所述第二连接分支电极的一端连接所述第二分支电极，所述第二连接分支电极的另一端与所述第二方向上相邻所述触控单元的所述第二连接分支电极连接，同一个所述触控单元中的所述第一连接分支电极、所述第二连接分支电极、第二分支电极以及所述第二主干电极围合的区域设置有浮置电极。\n\n[0027]在上述触控显示装置中，所述第二分支电极由所述第二主干电极靠近所述第二主干电极与所述第一主干电极交叉的一端延伸出，在所述第二方向上相邻两个所述触控单元的相邻两个所述第二分支电极远离与所述第二主干电极连接的一端的另一端连接，在所述第二方向上相邻两个所述触控单元的相邻两个所述第二分支电极以及相邻两个第二主干电极围合的区域内设置有浮置电极，所述浮置电极与所述第一电极以及所述第二电极电性绝缘。\n\n[0028]在上述触控显示装置中，在靠近所述第一电极和所述第二电极交叉位置处，所述第一主干电极和所述第二主干电极中的至少一者设置有加宽部。\n\n[0029]在上述触控显示装置中，所述触控显示装置还包括显示面板，所述触控层位于所述显示面板的一侧，所述显示面板包括有机发光二极管阵列层以及封装层，所述封装层位于所述触控层和所述有机发光二极管阵列层之间，所述封装层的厚度为5微米-15微米。\n\n[0030]有益效果：本申请提供一种触控显示装置，触控显示装置包括触控层，触控层包括多个触控单元，每个触控单元包括一个第一电极以及一个第二电极，第一电极与第二电极电性绝缘，每个触控单元中，第一电极的电阻大于0欧姆且小于或等于50欧姆，且第一电极的寄生电容大于0皮法且小于或等于18皮法；第二电极的电阻大于0欧姆且小于或等于50欧姆，且第二电极的寄生电容大于0皮法且小于或等于18皮法。通过同时对每个触控单元中第一电极的电阻和寄生电容以及每个触控单元中第二电极的电阻和寄生电容进行优化，以降低每个触控单元中第一电极和第二电极之间的节点互电容充电至预设阈值电压所需时间，从而提高触控显示装置的触控报点率。\n\n附图说明\n\n[0031]图1为本申请触控显示装置的示意图；\n\n[0032]图2为图1所示触控层的示意图；\n\n[0033]图3为图1所示触控显示装置的触控层的第一种架构示意图；\n\n[0034]图4为图1所示触控显示装置的触控层的第二种架构示意图；\n\n[0035]图5A为本申请实施例触控单元1的示意图；\n\n[0036]图5B为本申请实施例触控单元2的示意图；\n\n[0037]图5C为本申请实施例触控单元3的示意图；\n\n[0038]图6A为本申请实施例触控单元4的示意图；\n\n[0039]图6B为本申请实施例触控单元5的示意图；\n\n[0040]图6C为本申请实施例触控单元6的示意图；\n\n[0041]图6D为本申请实施例触控单元7的示意图；\n\n[0042]图7A为本申请实施例触控单元8的示意图；\n\n[0043]图7B为对比例3的触控单元的示意图。\n\n具体实施方式\n\n[0044]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0045]本申请提供一种触控显示装置，触控显示装置可以为柔性触控显示装置，触控显示装置也可以为硬质触控显示装置。触控显示装置包括触控层以及显示面板。触控层位于显示面板的一侧。\n\n[0046]触控层包括多个阵列排布的触控单元，每个触控单元包括一个沿第一方向设置的第一电极以及一个沿第二方向设置的第二电极，第一电极与所述第二电极电性绝缘，第一电极和第二电极组成互容式触控电极，第一方向与第二方向相异。\n\n[0047]每个触控单元中，第一电极的电阻大于0欧姆且小于或等于50欧姆，且第一电极的寄生电容大于0皮法且小于或等于18皮法；第二电极的电阻大于0欧姆且小于或等于50欧姆，且第二电极的寄生电容大于0皮法且小于或等于18皮法。通过优化每个触控单元中的第一电极的电阻的参数、第一电极的寄生电容的参数、第二电极的电阻的参数以及第二电极的寄生电容的参数，以降低每个触控单元中节点互电容充电至预设电压的时间，从而提高触控显示装置的触控报点率。\n\n[0048]在一些实施例中，每个触控单元中，第一电极的电阻大于或等于5欧姆且小于或等于35欧姆，且第一电极的寄生电容大于或等于2皮法且小于或等于17皮法；第二电极的电阻大于或等于5欧姆且小于或等于35欧姆，且第二电极的寄生电容大于或等于2皮法且小于或等于17皮法。\n\n[0049]在一些实施例中，每个触控单元中，第一电极的电阻大于或等于8欧姆且小于或等于25欧姆，且第一电极的寄生电容大于或等于5皮法且小于或等于12皮法；第二电极的电阻大于或等于8欧姆且小于或等于25欧姆，且第二电极的寄生电容大于或等于5皮法且小于或等于12皮法。\n\n[0050]每个触控单元中，第一电极的电阻可以为2欧姆、4欧姆、8欧姆、12欧姆、16欧姆、20欧姆、24欧姆、28欧姆、32欧姆、36欧姆、40欧姆、44欧姆或48欧姆；第一电极的寄生电容可以为2皮法、4皮法、6皮法、8皮法、10皮法、12皮法、14皮法或16皮法；第二电极的电阻可以为2欧姆、4欧姆、8欧姆、12欧姆、16欧姆、20欧姆、24欧姆、28欧姆、32欧姆、36欧姆、40欧姆、44欧姆或48欧姆；第二电极的寄生电容为2皮法、4皮法、6皮法、8皮法、10皮法、12皮法、14皮法或16皮法。\n\n[0051]在一些实施例，触控显示装置还包括第一引线、第二引线以及触控芯片，第一引线与每个触控单元的第一电极电性连接，第二引线与每个触控单元的第二电极电性连接，第一引线以及第二引线与触控芯片电性连接，每个第一引线和每个第二引线的电阻均大于0欧姆且小于或等于2500欧姆。第一引线和第二引线的电阻越小，第一引线和第二引线的阻抗越小，越有利于信号的传输，降低引线的阻抗导致的阻容延时，从而减小节点互电容充电至预设电压所需时间。可以提高第一引线和第二引线的材料导电性或者增加第一引线或者第二引线的线宽以降低第一引线和第二引线的电阻，也可以通过每个第一引线和每个第二引线由多层导线组成以降低第一引线和第二引线的电阻。\n\n[0052]在一些实施例中，每个第一引线和每个第二引线的电阻大于或等于200欧姆且小于或等于2200欧姆。具体地，第一引线和第二引线的电阻可以为20欧姆、50欧姆、80欧姆、100欧姆、200欧姆、500欧姆、800欧姆、1200欧姆、1500欧姆、1800欧姆、2200欧姆以及2500欧姆。\n\n[0053]在一些实施例中，每个触控单元中，第一电极的电阻大于或等于8欧姆且小于或等于30欧姆，且第一电极的寄生电容大于或等于5皮法且小于或等于13皮法；\n\n[0054]第二电极的电阻大于或等于8欧姆且小于或等于30欧姆，且第二电极的寄生电容大于或等于5皮法且小于或等于13皮法；\n\n[0055]每个第一引线和每个第二引线的电阻大于或等于100欧姆且小于或等于2000欧姆。通过第一电极的电阻、第一电极的寄生电容、第二电极的电阻、第二电极的寄生电容、第一引线的电阻以及第二引线的电阻的优化且相互配合，以降低节点互电容充电至预设电压的所需时间。\n\n[0056]在一些实施例中，每个所述触控单元中的所述第一电极和所述第二电极形成节点互电容，节点互电容充电至预设电压的时间小于或等于阈值时长，以减小节点互电容的充电时间，从而缩短互容扫描耗时，提高触控报点率。阈值时长越小，越有利于提高触控报点率。\n\n[0057]在一些实施例中，触控显示装置还包括触控芯片，预设电压与输入电压的比值百分数为90%-100%，阈值时长小于或等于1.5微秒且大于0微秒，输入电压由触控芯片输出至触控单元。预设电压用于保证触控单元能正常工作，保证基本的触控性能。预设电压与输入电压的比值百分数可以为90%、92%、95%、97%、98%以及100%。阈值时长可以为0.4微秒、0.5微秒、0.55微秒、0.65微秒、0.7微秒、0.9微秒、1.0微秒、1.2微秒、1.25微秒、1.35微秒、1.5微秒。\n\n[0058]在一些实施例中，预设电压与输入电压的比值百分数为95%，阈值时长为1.35微秒。\n\n[0059]触控显示装置的触控芯片通常需要工作在信号满足节点互电容充电至预设电压所需时间小于或等于t的状况，如果信号无法满足充电至预设电压的时间要求，则相应的驱动信号波形存在失真，将影响信号的检测以及触控性能，t为互容节点充电至预设电压的时间。\n\n[0060]在一些实施例中，沿第一方向上同排设置的触控单元的数目大于沿第二方向同排设置的触控单元的数目，第一电极的寄生电容小于第二电极的寄生电容。\n\n[0061]当第一方向上同排设置的触控单元的数目大于第二方向上同排设置触控单元的数目时，第一方向上同排设置的第一电极的数目会大于第二方向上同排设置的第二电极的数目，通过使第一电极的寄生电容小于第二电极的寄生电容，以减少第一方向上同排设置的第一电极形成的第一电极通道的寄生电容，更有利于电信号在第一电极通道上的传输，特别是，第一电极为驱动电极时，驱动电极用于输入扫描信号时，更加有利于降低3RC时间常数。\n\n[0062]在一些实施例中，每个触控单元中，第一电极的面积小于第二电极的面积，以使得每个触控单元中第一电极的寄生电容小于第二电极的寄生电容。\n\n[0063]在一些实施例中，第一电极包括沿第一方向延伸的第一主干电极以及由第一主干电极延伸出的至少一个第一分支电极；\n\n[0064]第二电极包括沿第二方向延伸的第二主干电极以及由第二主干电极延伸出的至少一个第二分支电极。\n\n[0065]第一主干电极沿第一方向延伸，且主要用于传导与第一方向平行的电流，第一分支电极主要用于与第二分支电极之间形成互电容，以调整触控感应量。\n\n[0066]第二主干电极与第一主干电极的作用基本相同，第二分支电极与第一分支电极的作用基本相同。第一分支电极与第一主干电极之间的夹角大于0度且小于90度，例如可以为30度、40度、45度、50度、60度、70度以及80度等。第二分支电极与第二主干电极之间的夹角大于0度且小于90度，例如可以为30度、40度、45度、50度、60度、70度以及80度。具体地，第一分支电极与第一主干电极之间的夹角等于45度，第二分支电极与第二主干电极之间的夹角等于45度。\n\n[0067]在一些实施例中，第一主干电极内设置有浮置电极，和/或，至少一个第一分支电极内设置有浮置电极，和/或，第二主干电极内设置有浮置电极，和/或，至少一个第二分支电极内设置有浮置电极，浮置电极与第一电极以及第二电极电性绝缘。通过在第一主干电极以及第一分支电极中的至少一者内设置浮置电极，以降低第一电极的面积，从而降低第一电极的寄生电容。且通过在第二主干电极以及第二分支电极中的至少一者内设置浮置电极，以降低第二电极的面积，从而降低第二电极的寄生电容。\n\n[0068]在一些实施例中，至少一个第一分支电极内设置有浮置电极，和/或，至少一个第二分支电极内设置有浮置电极。通过在第一分支电极和第二分支电极中的一者内设置浮置电极，而不在第一主干电极以及第二主干电极内设置浮置电极，以减小第一电极和/或第二电极的面积从而减小第一电极和第二电极的寄生电容的同时，保证第一电极和/或第二电极的电阻。因为在分支电极内设置浮置电极不会对电极的电阻造成较大影响，而在主干电极内设置浮置电极会导致电极的电阻增大。\n\n[0069]在一些实施例中，第二电极还包括第一连接分支电极，第一连接分支电极的一端连接第二主干电极，且第一连接分支电极的另一端连接第二分支电极，每个触控单元的第一连接分支电极、第二主干电极以及第二分支电极围合的区域设置有浮置电极，浮置电极与第一电极以及第二电极电性绝缘。在一个触控单元内，在第二分支电极和第二主干电极之间增加第一连接分支电极可以增加电流在第二电极上传导的电流传输通道，从而降低第二电极的电阻，从而降低节点互电容充电至预设电压所需时间。另外，每个触控单元的第一连接分支电极、第二主干电极以及第二分支电极围合的区域设置有浮置电极，可以减少第二电极的面积，从而减少第二电极的寄生电容，进一步地降低节点互电容充电至预设电压所需时间。\n\n[0070]在一些实施例中，第二电极还包括第二连接分支电极，第二连接分支电极的一端连接第二分支电极，第二连接分支电极的另一端与第二方向上相邻触控单元的第二连接分支电极连接，同一个触控单元中的第一连接分支电极、第二连接分支电极、第二分支电极以及第二主干电极围合的区域设置有浮置电极。通过设置第二连接分支电极以增加相邻两个触控单元的相邻两个第二电极的电流传输通道，从降低第二电极通道的阻抗，降低节点互电容充电至预设电压所需时间。且通过在同一个触控单元中的第一连接分支电极、第二连接分支电极、第二分支电极以及第二主干电极围合的区域设置有浮置电极，以进一步地减小第二电极的寄生电容。\n\n[0071]在一些实施例中，第二分支电极由第二主干电极靠近第二主干电极与第一主干电极交叉的一端延伸出，在第二方向上相邻两个触控单元的相邻两个第二分支电极远离与第二主干电极连接的一端的另一端连接，在第二方向上相邻两个触控单元的相邻两个第二分支电极以及相邻两个第二主干电极围合的区域内设置有浮置电极。通过使相邻两个触控单元的第二分支电极在第二方向连接，以增加电流在第二电极通道上的传输路径，从而降低第二电极通道的阻抗，减少节点互电容充电至预设电压所需时间。且通过在第二方向上相邻两个触控单元的相邻两个第二分支电极以及相邻两个第二主干电极围合的区域内设置有浮置电极，以降低第二电极的寄生电容。\n\n[0072]在一些实施例中，在靠近第一电极和第二电极交叉位置处，第一主干电极和第二主干电极中的至少一者设置有加宽部，以降低第一电极和第二电极中至少一者在靠近交叉位置处的电阻，从而减小节点互电容充电至预设电压所需时间。\n\n[0073]在一些实施例中，触控显示装置还包括显示面板，触控层位于所述显示面板的一侧，显示面板包括有机发光二极管阵列层以及封装层，封装层位于触控层和有机发光二极管阵列层之间，封装层的厚度为5微米-15微米。例如封装层的厚度为6微米、8微米、10微米、12微米、14微米。通过调节封装层的厚度以调节有机发光二极管阵列层的共阴极与触控层中第一电极和第二电极之间的寄生电容，封装层的厚度越大，寄生电容越小。\n\n[0074]在一些实施例中，封装层包括有机层，有机层的厚度为6微米-12微米。例如有机层的厚度为6微米、8微米、10微米以及11微米。\n\n[0075]需要说明的是，第一电极和第二电极的寄生电容主要来源于与共阴极之间的寄生电容，共阴极与第一电极以及第二电极之间的间距取决于封装层的厚度。触控芯片对节点互电容进行充电时，同时对寄生电容进行充电，当寄生电容越大时，将目标节点互电容充电到满足电信号检测的状态，例如充电至预设电压时，所需的扫描时间越长，因此相应的触控报点率会下降。\n\n[0076]在一些实施例中，第一电极为驱动电极，且第二电极为感应电极。\n\n[0077]在一些实施例中，第一电极以及第二电极均由金属网格组成。组成金属网格的金属线环绕子像素。\n\n[0078]以下对本申请的一些概念进行解释。\n\n[0079]节点互电容：每个触控单元中，第一电极和第二电极形成一个节点互电容，节点互电容包括第一电极和第二电极的边界之间形成的互电容以及第一电极和第二电极之间交叠部分形成的基础电容。一般而言，第一电极和第二电极的边界之间形成的互电容控制在合适的范围才有利于保证触控的信号量，从而提高触控灵敏度等触控性能，第一电极和第二电极之间交叠部分形成的基础电容越小，越有利于提高触控报点率。触控芯片对驱动电极进行电信号扫描驱动时，相当于对相应的驱动电极与感应电极在交叉位置处形成的节点互电容进行充放电，触控芯片通过接收手指触摸时相应的节点电容的改变来检测手指触摸的位置。\n\n[0080]3RC Settling time（3RC时间常数）是输出信号达到输入信号95%幅值状态的一个时间常数，该时间常数由触摸屏屏体本身的电阻、电容的大小以及分布来决定，其中，输入信号为由触控芯片输出至驱动电极的电压，输出信号是写入至节点互电容的电压。当触摸屏屏体设计确定后，则相应的触摸屏屏体上每个节点互电容的3RC时间常数确定。通常触摸屏屏体上节点互电容充电至输入信号95%幅值所需时间最长的节点互电容如果能满足预设的3RC时间常数，则其他节点互电容的信号亦可以满足预设的3RC时间常数，因此触摸屏的报点率通常由屏体上节点互电容充电至输入信号95%幅值所需时间最长的节点互电容的3RC时间常数来决定。\n\n[0081]触控报点率：触控报点率等于触控一帧耗时（单位：秒）的倒数，通常触控的一帧耗时包括自容扫描时间、互容扫描时间、自互容切换时间和复位时间，其中占据触控一帧耗时的绝大部分是互容扫描耗时，互容切换时间和复位时间通常由触控芯片决定。互容扫描所需时间通常在触控芯片扫描频率满足的条件下，由屏体本身的3RC时间常数来决定。\n\n[0082]以下结合具体实施例对上述方案进行详述。\n\n[0083]第一实施例\n\n[0084]请参阅图1，其为本申请触控显示装置的示意图。触控显示装置包括有机发光二极管显示面板10、触控层20、偏光片30以及保护盖板40。\n\n[0085]有机发光二极管显示面板10包括基板100、薄膜晶体管阵列层101、有机发光二极管阵列层102以及封装层103。\n\n[0086]基板100为柔性基板。薄膜晶体管阵列层101设置于基板100上，薄膜晶体管阵列层101包括多个阵列排布的薄膜晶体管。有机发光二极管阵列层102设置于薄膜晶体管阵列层101远离基板100的一侧。有机发光二极管阵列层102包括多个阵列排布的有机发光二极管，多个有机发光二极管包括多个独立的阳极、设置于每个阳极上的有机发光层以及一个共阴极，即多个有机发光二极管共用一个共阴极，共阴极为一个整面的金属导电层。每个有机发光二极管构成一个子像素。子像素包括红光子像素、蓝光子像素以及绿光子像素。封装层103用于保护有机发光二极管阵列层102中的有机层以及共阴极，避免有机层以及共阴极为水蒸气以及氧气等侵蚀。封装层103设置于有机发光二极管阵列层102远离薄膜晶体管阵列层101的一侧。封装层103可以为薄膜封装层，薄膜封装层包括两个无机层以及设置于两个无机层之间的有机层。\n\n[0087]请参阅图2，其为图1所示触控层的示意图。触控层20包括缓冲层201、第二连接部202、第一钝化层203、第一电极204、第二电极205以及第二钝化层206。缓冲层201为绝缘层，缓冲层201的制备材料选自氮化硅以及氧化硅中的至少一种。第二连接部202设置于缓冲层201上，第二连接部202具有导电性，第二连接部202为两条间隔设置的V形桥接线。第一钝化层203覆盖第二连接部202以及缓冲层201。第一钝化层203的制备材料选自氮化硅以及氧化硅中的至少一种。第一电极204以及第二电极205设置于第一钝化层203上，且第一电极204与第二电极205之间电性绝缘，第一电极204通过第一连接部（未示出）连接，第一电极204与第一连接部同层设置且连续形成。第二钝化层206覆盖第一电极204以及第二电极205。相邻两个第二电极205通过第二连接部202连接，每个第二电极205通过第一钝化层203上的过孔与第二连接部202连接。\n\n[0088]在本实施例中，第一电极204、第二电极205、第二连接部202以及第一连接部组成触控电极。第二连接部202和第一电极204之间的交叠部分形成基础电容。第一电极204、第二电极205、第二连接部202以及第一连接部均由金属网格组成。金属网格环绕有机发光二极管阵列层的子像素设置，以避免对子像素的光造成遮挡。\n\n[0089]第二实施例\n\n[0090]请参阅图3，其为图1所示触控显示装置的触控层的第一种架构示意图。在第一方向上同排设置的多个触控单元207的第一电极204电性连接以形成一个第一电极通道，在第二方向上同排设置的多个触控单元207的第二电极205电性连接以形成一个第二电极通道。每个第一电极通道的两端与第一引线208连接，每个第二电极通道的一端与第二引线209连接，即触控层采用2T1R架构。\n\n[0091]在本实施例中，第一电极为驱动电极，第二电极为感应电极。在第二方向上有17个第一电极通道，在第一方向上有37个第二电极通道，其中，第1个第二电极通道至第37个第二电极通道依次排列且第37个第二电极通道距离触控芯片最远。以在第二方向上的4个第一电极通道为一组进行扫描，例如第1个至第4个第一电极通道为一组进行扫描，第5个至第8个第一电极通道为一组进行扫描，第9个至第12个第一电极通道为一组进行扫描，第13个至第16个第一电极通道为一组进行扫描，第17个第一电极通道为一组进行扫描。每组第一电极通道扫描四次，每次扫描对应输入一组波形，每一组波形包含48个标准方波，故扫描完一个完整的触控显示装置所需的互容扫描时间为5×4×48×2×t，其中，一个标准方波对应的时间为2×t，t为节点互电容充电至输入电压的95%时所需最长时间。\n\n[0092]在本实施例，触控层上充电至输入电压95%所需时间最长的节点互电容M位于距离触控层中间的位置，例如第1个第一电极通道和第19个第二电极通道交叉处的节点互电容。\n\n[0093]屏体互容扫描时间主要包括N组互容扫描波形构成，N组互容扫描波形的时间构成整个互容扫描时段，当屏体的通道数确定后，通常N与屏体的第一电极通道的数目以及第一电极通道的驱动分组相关。\n\n[0094]第三实施例\n\n[0095]请参阅图4，其为图1所示触控显示装置的触控层的第二种架构示意图。图4所示触控层与图3所示触控层基本相似，图4与图3所示触控层的架构不同之处在于，每个第一电极通道的一端与第一引线208连接，每个第二电极通道的一端与第二引线209连接，即触控层采用1T1R架构。本实施例第一电极和第二电极的排布设计与图3所示触控层相同，分组扫描的方式也与第二实施例相同。\n\n[0096]在本实施例中，触控层上充电至输入电压95%所需时间最长的节点互电容M位于距离触控芯片输入信号远端的位置，例如位于第1个第一电极通道和第37个第二电极通道交叉。\n\n[0097]第四实施例以及对比例1\n\n[0098]本实施例以及对比例1旨在研究降低感应电极的电阻、寄生电容以及感应电极通道的电阻对节点互电容充电至输入电压的95%所需时间的影响，触控单元1-3以及对比例1的仿真结果如表1。\n\n[0099]如图5A所示，其为本申请实施例触控单元1的示意图。触控单元1包括第一电极204以及第二电极205。第一电极204包括第一主干电极2041以及第一分支电极2043，第一分支电极2043由第一主干电极2041在第一电极204与第二电极205交叉的位置处延伸出，第一主干电极2041向第一方向延伸，第一分支电极2043与第一主干电极2041之间的夹角等于45度。第二电极205包括第二主干电极2051以及第二分支电极2053，第二分支电极2053由第二主干电极2051在第一电极204和第二电极205交叉处延伸出，且第二分支电极2053与第二主干电极2051之间的夹角等于45度。每个第二分支电极2053包围与第二分支电极2053相邻的一个第一分支电极2043。在第二方向上相邻两个触控单元的相邻两个第二分支电极2053连接。在第二方向上相邻两个触控单元的第二主干电极2051、第二分支电极2053围合的区域设置有浮置电极206，在第二方向上相邻两个触控单元的第二主干电极2051、第二分支电极2053围合的区域设置的浮置电极206的面积与每个第二分支电极2053的面积的比值为4：5，浮置电极206与第一电极204以及第二电极205之间电性绝缘。在第一方向上相邻两个触控单元的相邻两个第一主干电极、相邻两个第二分支电极2053围合的区域设置有浮置电极206，以避免第一方向上相邻两个触控单元的相邻两个第二分支电极2053断开且避免两者之间短路。\n\n[0100]如图5B所示，其为本申请实施例触控单元2的示意图。图5B所示触控单元2与图5A所示触控单元1基本相似，不同之处在于，在第二方向上相邻两个触控单元的第二主干电极2051、第二分支电极2053围合的区域设置有浮置电极206的面积与每个第二分支电极2053的面积的比值为1：10。\n\n[0101]如图5C所示，其为本申请实施例触控单元3的示意图。图5C所示触控单元3与图5A所示触控单元1基本相似，不同之处在于，第二电极205包括第一连接分支电极2054以及第二连接分支电极2055，第一连接分支电极2054的一端连接第二主干电极2051，且第一连接分支电极2054的另一端连接第二分支电极2053，每个触控单元的第一连接分支电极2054、第二主干电极2051以及第二分支电极2053围合的区域设置有浮置电极206。第二连接分支电极2055的一端连接第二分支电极2053，第二连接分支电极2053的另一端与第二方向上相邻触控单元的第二连接分支电极2053连接，同一个触控单元中的第一连接分支电极2054、第二连接分支电极2055、第二分支电极2053以及第二主干电极2051围合的区域设置有浮置电极206。\n\n[0102]对比例1的触控单元与图5A所示触控单元基本相似，不同之处在于，对比例1的触控单元在第二方向上相邻两个触控单元的第二主干电极2051、第二分支电极2053围合的区域不设置有浮置电极206。\n\n[0103]\n\n[0104]其中，Unit Cs_Tx为触控单元中第一电极的寄生电容，Unit Cs_Rx为触控单元中第二电极的寄生电容，Unit R_Tx为触控单元中第一电极的电阻，Unit R_Rx为触控单元中第二电极的电阻，R_Rx为与触控层上充电至输入电压的95%所需时间最长的节点互电容连接的第二引线209的电阻，3RC时间常数为节点互电容充电至输入电压的95%所需最长的时间。\n\n[0105]上述触控单元1-3以及对比例1均采用第二实施例的触控层驱动架构。在自互容切换时间、自容耗时以及复位耗时均相同时，触控单元1-3的3RC时间常数均小于对比例1的3RC时间常数，触控单元1-3的3RC时间常数均小于1.35微秒，触控单元1-3的触控报点率大于对比例1的触控报点率，触控单元1-3的最大触控报点率为264Hz，触控单元1-3的触控报点率相对于对比例1的触控报点率至少提高了11.11%。主要原因在于触控单元1-3的第二电极205的寄生电容小于对比例1的第二电极205的寄生电容。触控单元3的3RC时间常数较小，主要原因在于触控单元3包括第一连接分支电极2054以及第二连接分支电极2055，增加了第二电极205的电流传输通道，从而降低了第二电极205的电阻，降低第二电极205的电阻有利于降低节点互电容充电至输入电压95%所需时间。触控单元2的3RC时间常数和触控单元1的3RC时间常数相同，主要原因在于触控单元1的第二电极205的寄生电容明显小于触控单元2的第二电极205的寄生电容，而触控单元1的第一电极204的寄生电容稍大于触控单元2的第一电极204的寄生电容，然而第一电极204作为输入扫描信号的驱动电极，第一电极204的寄生电容的减小比第二电极205的寄生电容的减少更加有利于减少3RC时间常数，当然，第二电极205的寄生电容较小也有利于降低3RC时间常数。\n\n[0106]需要说明的是，在触控单元1采用第二实施例的触控层驱动架构时，3RC 时间常数为1.326微秒，触控芯片输出的互容扫描波形频率设置为377KHz。\n\n[0107]第五实施例以及对比例2\n\n[0108]本实施例以及对比例2旨在研究触控单元中驱动电极以及感应电极内设置浮置电极对驱动电极以及感应电极的电阻以及寄生电容的影响，且研究驱动电极以及感应电极的电阻以及寄生电容对应节点互电容充电至输入电压的95%所需时间（3RC 时间常数）的影响，触控单元4-7以及对比例2经过模拟仿真的数据如表2。\n\n[0109]如图6A所示，其为本申请实施例触控单元4的示意图。触控单元4包括第一电极204以及第二电极205，第一电极204包括第一主干电极2041、第一垂直主干电极2042以及第一分支电极2043，第一主干电极2041与第一垂直主干电极2042之间相互垂直，第一分支电极2043由第一主干电极2041以及第一垂直主干电极2042延伸出，且第一主干电极2041延伸出的第一分支电极2043与第一主干电极2041之间的夹角等于45度，第一垂直主干电极2042延伸出的第一分支电极2043与第一垂直主干电极2042之间的夹角等于45度。第二电极205包括第二主干电极2051、第二垂直主干电极2052以及第二分支电极2053，第二主干电极2051与第二垂直主干电极2052之间相互垂直，第二分支电极2053由第二主干电极2051以及第二垂直主干电极2052延伸出，由第二主干电极2051延伸出的第二分支电极2053与第二主干电极2051之间的夹角等于45度，由第二垂直主干电极2052延伸出的第二分支电极2053与第二垂直主干电极2052之间的夹角等于45度。第一电极204和第二电极205的交叉位置处两个第一主干电极2041通过两对间隔设置的V形桥接线连接。第一电极204和第二电极205的交叉位置处两个第二主干电极2051通过连接部连接，连接部与第一电极204以及第二电极205同层设置。第一电极204以及第二电极205均关于第一主干电极2041以及第二主干电极2051对称设置。第一分支电极2043和与第一分支电极2043相邻的第二分支电极2053平行。部分第一分支电极2043与部分第二分支电极2053交叉设置。第一分支电极2043包括第一加宽部以及与第一加宽部对应的第一连接部，第二分支电极2053包括第二加宽部以及与第二加宽部对应的第二连接部。第一分支电极2043的第一加宽部与相邻的第二分支电极2053的第二连接部对应设置，第一分支电极2043的第一连接部与相邻的第二分支电极2053的第二加宽部对应设置。\n\n[0110]如图6B所示，其为本申请实施例触控单元5的示意图。触控单元5与触控单元4基本相似，不同之处在于，第一分支电极2043以及第二分支电极2053内均设置有浮置电极206，第一主干电极2041以及第二主干电极2051内未设置浮置电极206，浮置电极206与第一电极204以及第二电极205电性绝缘，浮置电极206不载入电信号。\n\n[0111]如图6C所示，其为本申请实施例触控单元6的示意图。触控单元6与触控单元5基本相似，不同之处在于，第一主干电极2041以及第二主干电极2051内设置有浮置电极206，第一分支电极2043以及第二分支电极2053内不设置浮置电极206，第一主干电极2041的面积与第一主干电极2041内的浮置电极206的面积的比值为7：3，第二主干电极2051的面积与第二主干电极2051内的浮置电极206的面积的比值为7：3，第一主干电极2041的面积不包括浮置电极206的面积，第二主干电极2051的面积不包括浮置电极206的面积。\n\n[0112]如图6D所示，其为本申请实施例触控单元7的示意图。触控单元7与触控单元5基本相似，不同之处在于，第一主干电极2041、第二主干电极2051、第一分支电极2043以及第二分支电极2053内均设置有浮置电极206，第一主干电极2041的面积与第一主干电极2041内的浮置电极206的面积的比值为7：3，第二主干电极2051的面积与第二主干电极2051内的浮置电极206的面积的比值为7：3，其中，第一主干电极2041的面积不包括浮置电极206的面积，第二主干电极2051的面积不包括浮置电极206的面积。\n\n[0113]对比例2的触控单元与图6C所示触控单元基本相似，不同之处在于，对比例2中的触控单元中，第一主干电极2041的面积与第一主干电极2041内的浮置电极206的面积的比值为5：5，第二主干电极2051的面积与第二主干电极2051内的浮置电极206的面积的比值为5：5。\n\n[0114]\n\n[0115]触控单元4-7以及对比例2采用图4所示触控层的触控架构示意图。由表2可知，触控单元4-7的3RC时间常数小于对比例2的3RC时间常数，且触控单元4-7的3RC时间常数均小于1.5微秒。主要原因在于，对比例2的第一电极204的第一主干电极2041以及第二电极205的第二主干电极2051中浮置电极206较多，导致第一电极204和第二电极205的阻抗较大，尽管第一电极204以及第二电极205的寄生电容较小，但是由于第一电极204以及第二电极205的阻抗较大对节点互电容充电的不利影响超过第一电极204和第二电极205的寄生电容较小对节点互电容充电的有利影响，导致对比例2的3RC时间常数高达1.605微秒。触控单元4的3RC时间常数大于触控单元5的3RC时间常数，主要原因在于触控单元5在第一分支电极2043和第二分支电极2053内设置有浮置电极206，减小第一电极204以及第二电极205的面积，从而使得第一电极204和第二电极205的寄生电容减小，第一分支电极2043以及第二分支电极2053的面积减小不会影响第一电极204以及第二电极205的电阻。触控单元6的3RC时间常数大于触控单元4的3RC时间常数，主要原因在于，触控单元6的第一主干电极2041以及第二主干电极2051内设置有浮置电极206，减少第一电极204和第二电极205的面积以降低第一电极204和第二电极205的寄生电容的同时，第一主干电极2041和第二主干电极2051的电阻增大，第一主干电极2041和第二主干电极2051主要用于传导电流，第一电极204和第二电极205的阻抗增大，导致3RC时间常数较大。触控单元7的3RC时间常数小于触控单元6的3RC时间常数，主要原因在于，触控单元7的第一分支电极2043以及第二分支电极2053内均设置有浮置电极206，分支电极中设置浮置电极206使得第一电极204和第二电极205的寄生电容更小，从而使得3RC时间常数更小。\n\n[0116]第六实施例以及对比例3\n\n[0117]本申请实施例以及对比例3旨在研究在第一电极以及第二电极的交叉位置处增设加宽部对电阻的影响，且研究电阻降低对节点互电容充电至输入电压的95%所需时间（3RC时间常数）的影响，触控单元8以及对比例3经过模拟仿真的数据如表3。\n\n[0118]如图7A所示，其为本申请实施例触控单元8的示意图。触控单元8包括第一电极204以及第二电极205。第一电极204包括两个第一等腰直角三角形电极，第二电极205包括两个第二等腰直角三角形电极，第一电极204的两个第一等腰直角三角形电极在第一方向上电性连接，第二电极的两个第二等腰直角三角形电极在第二方向上电性连接。第一等腰直角三角形电极的相邻两个边缘上且靠近第一电极204和第二电极205交叉位置处设置有内陷部204a，第二等腰直角三角形电极的对应边缘上设置有凸起部205a，每个内陷部204a与每个凸起部205a相互配合。在本实施例中，第一电极204为驱动电极，第二电极205为感应电极。\n\n[0119]如图7B所示，其为对比例3的示意图。对比例3的触控单元与触控单元8基本相似，不同之处在于，对比例3的触控单元上未设置内陷部204a以及凸起部205a。\n\n[0120]\n\n[0121]触控单元8以及对比例3的触控单元采用如图3所示的触控架构。触控单元8的3RC时间常数小于对比例3的3RC时间常数，主要原因在于，触控单元8中第二电极205在靠近第一电极204和第二电极205交叉的位置设置有凸起部205a，使得第二电极205的主干电极的宽度在靠近第一电极204和第二电极205交叉位置处增加，从而使得第二电极205的电阻较小，而在第一电极204上设置内陷部204a，不会明显影响第一电极204的主干电极的电阻，第二电极205的电阻减小使得触控单元8的3RC时间常数较小。\n\n[0122]以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10810, 23864, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其是涉及一种显示面板及其制备方法。\n\n背景技术\n\n[0002]现有显示技术朝着Micro-LED(微型发光二极管)显示技术发展，在Micro-LED显示面板制备过程中，会需要使用巨量转移技术将Micro-LED芯片转移到对应位置，使得Micro-LED芯片正常显示，如图1所示，现有Micro-LED芯片在绑定到驱动电路上时，会连接层将Micro-LED芯片绑定在绑定端子上，但在实际过程中，由于Micro-LED芯片与绑定端子之间的对位精度较高，导致Micro-LED芯片容易与绑定端子之间出现对位偏移，导致Micro-LED芯片滑落，导致显示不良，同时，在绑定Micro-LED芯片时，Micro-LED芯片数量较大，会进一步导致Micro-LED芯片出现脱落的可能性增大。\n\n[0003]所以，现有Micro-LED显示面板存在Micro-LED芯片与绑定端子容易出现对位偏移，导致Micro-LED芯片脱落的问题。\n\n发明内容\n\n[0004]本申请实施例提供一种显示面板及其制备方法，用以缓解现有Micro-LED显示面板存在Micro-LED芯片与绑定端子容易出现对位偏移，导致Micro-LED芯片脱落的问题。\n\n[0005]本申请实施例提供一种显示面板，该显示面板包括：\n\n[0006]基板；\n\n[0007]驱动电路层，设置于所述基板上，形成有用于驱动微型发光二极管芯片的驱动电路；\n\n[0008]绑定端子，设置于所述驱动电路层上，并与所述驱动电路对应；\n\n[0009]阻挡层，形成围绕所述绑定端子设置的阻挡图案，所述阻挡图案的厚度大于所述绑定端子的厚度，所述阻挡图案与所述绑定端子形成有开口，所述开口的上端的宽度大于所述开口的下端的宽度；\n\n[0010]连接层，设置于所述绑定端子上，且位于所述开口内；\n\n[0011]微型发光二极管芯片，设置于所述连接层上，且位于所述绑定端子与阻挡图案形成的开口内。\n\n[0012]在一些实施例中，所述微型发光二极管芯片包括发光层、第一电极和第二电极，所述第一电极设置于所述发光层与所述绑定端子之间，所述第二电极设置于所述发光层远离所述绑定端子的一侧。\n\n[0013]在一些实施例中，所述开口的截面形状为倒梯形。\n\n[0014]在一些实施例中，所述阻挡图案与所述绑定端子的延长线之间形成的夹角的取值范围为30度至60度。\n\n[0015]在一些实施例中，所述阻挡图案与所述绑定端子接触的一侧为曲面，所述曲面的上端的宽度大于所述绑定端子的宽度。\n\n[0016]在一些实施例中，所述微型发光二极管芯片包括发光层、第一电极、第二电极，所述第一电极与所述第二电极设置于所述发光层与所述绑定端子之间，所述第一电极连接第一绑定端子，所述第二电极连接所述第二绑定端子。\n\n[0017]在一些实施例中，所述阻挡图案围绕所述第一绑定端子和所述第二绑定端子设置，且所述阻挡图案设置于所述第一绑定端子与所述第二绑定端子之间。\n\n[0018]在一些实施例中，所述第一绑定端子与所述第二绑定端子的厚度相同，位于所述第一绑定端子与所述第二绑定端子之间的阻挡图案的厚度，大于或者等于所述第一绑定端子的厚度。\n\n[0019]在一些实施例中，所述阻挡层的材料包括可溶性聚四氟乙烯、黑色光刻胶中的一种。\n\n[0020]同时，本申请实施例提供一种显示面板制备方法，该显示面板制备方法包括：\n\n[0021]提供基板；\n\n[0022]在所述基板上形成驱动电路层，并刻蚀所述驱动电路层形成用于驱动微型发光二极管芯片的驱动电路；\n\n[0023]在所述驱动电路层上形成绑定端子；所述绑定端子与所述驱动电路对应；\n\n[0024]在所述绑定端子上形成阻挡层，并刻蚀所述阻挡层形成围绕所述绑定端子设置的阻挡图案；且所述阻挡图案的厚度大于所述绑定端子的厚度，所述阻挡图案与所述绑定端子形成夹角，所述阻挡图案与所述绑定端子形成有开口，所述开口的上端的宽度大于所述开口的下端的宽度；\n\n[0025]在所述绑定端子上形成连接层；所述连接层位于所述开口内；\n\n[0026]在所述连接层上形成微型发光二极管芯片，形成显示面板；所述微型发光二极管芯片位于所述绑定端子与所述阻挡图案形成的开口内；\n\n[0027]对所述显示面板进行震动处理，以使偏移的微型发光二极管芯片与所述绑定端子贴合。\n\n[0028]有益效果：本申请实施例提供一种显示面板及其制备方法，该显示面板包括基板、驱动电路层、绑定端子、阻挡层、连接层和微型发光二极管芯片，所述驱动电路层设置于所述基板上，形成有用于驱动微型发光二极管芯片的驱动电路，所述绑定端子设置于所述驱动电路层上，并与所述驱动电路对应，所述阻挡层形成围绕所述绑定端子设置的阻挡图案，所述阻挡图案的厚度大于所述绑定端子的厚度，所述阻挡图案与所述绑定端子形成有开口，所述开口的上端的宽度大于所述开口的下端的宽度，所述连接层设置于所述绑定端子上，且位于所述开口内，所述微型发光二极管芯片设置于所述连接层上，且位于所述绑定端子与阻挡图案形成的开口内；通过围绕绑定端子设置阻挡图案，使阻挡图案和绑定端子形成开口，开口的上端宽度大于开口的下端的宽度，使得在微型发光二极管芯片出现偏移时，微型发光二极管芯片能够从阻挡图案上滑落至绑定端子上，与绑定端子对位贴合，从而减少了偏移的微型发光二极管芯片的数量，缓解了现有Micro-LED显示面板存在Micro-LED芯片与绑定端子容易出现对位偏移，导致Micro-LED芯片脱落的问题。\n\n附图说明\n\n[0029]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0030]图1为现有Micro-LED显示面板的示意图。\n\n[0031]图2为本申请实施例提供的显示面板的第一示意图。\n\n[0032]图3为本申请实施例提供的显示面板的第二示意图。\n\n[0033]图4为本申请实施例提供的显示面板的第三示意图。\n\n[0034]图5为本申请实施例提供的显示面板的第四示意图。\n\n[0035]图6为本申请实施例提供的显示面板制备方法的流程图。\n\n[0036]图7为本申请实施例提供的显示面板制备方法的各个步骤对应的显示面板的第一示意图。\n\n[0037]图8为本申请实施例提供的显示面板制备方法的各个步骤对应的显示面板的第二示意图。\n\n具体实施方式\n\n[0038]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0039]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0040]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0041]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0042]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0043]本申请实施例针对现有Micro-LED显示面板存在Micro-LED芯片与绑定端子容易出现对位偏移，导致Micro-LED芯片脱落的问题，本申请实施例用以缓解该问题。\n\n[0044]如图1所示，现有Micro-LED显示面板包括基板11、设置在基板11上的驱动电路12、设置在驱动电路12上的钝化层13，与驱动电路12连接的绑定端子14，在绑定端子上设置一层金属15，然后将Micro-LED芯片16绑定在绑定端子14上，如图1所示，由于Micro-LED芯片与绑定端子之间的对位精度要求较高，导致Micro-LED芯片16与绑定端子14之间出现对位偏移，导致Micro-LED芯片脱落，且由于需要绑定的Micro-LED芯片数量较大，导致Micro-LED芯片出现脱落的可能性增大，所以，现有Micro-LED显示面板存在Micro-LED芯片与绑定端子容易出现对位偏移，导致Micro-LED芯片脱落的问题。\n\n[0045]如图2所示，本申请实施例提供一种显示面板，该显示面板包括：\n\n[0046]基板21；\n\n[0047]驱动电路层，设置于所述基板21上，形成有用于驱动微型发光二极管芯片26的驱动电路22；\n\n[0048]绑定端子23，设置于所述驱动电路层22上，并与所述驱动电路22对应；\n\n[0049]阻挡层，形成围绕所述绑定端子23设置的阻挡图案24，所述阻挡图案24的厚度h1大于所述绑定端子23的厚度h2，所述阻挡图案24与所述绑定端子23形成有开口28，所述开口28的上端的宽度L1大于所述开口28的下端的宽度L2；\n\n[0050]连接层25，设置于所述绑定端子23上，且位于所述开口28内；\n\n[0051]微型发光二极管芯片26，设置于所述连接层25上，且位于所述绑定端子23与阻挡图案24形成的开口28内，所述开口28用于使偏移的微型发光二极管芯片26滑落在所述连接层上。\n\n[0052]本申请实施例提供一种显示面板及其制备方法，该显示面板包括基板、驱动电路层、绑定端子、阻挡层、连接层和微型发光二极管芯片，所述驱动电路层设置于所述基板上，形成有用于驱动微型发光二极管芯片的驱动电路，所述绑定端子设置于所述驱动电路层上，并与所述驱动电路对应，所述阻挡层形成围绕所述绑定端子设置的阻挡图案，所述阻挡图案的厚度大于所述绑定端子的厚度，所述阻挡图案与所述绑定端子形成有开口，所述开口的上端的宽度大于所述开口的下端的宽度，所述连接层设置于所述绑定端子上，且位于所述开口内，所述微型发光二极管芯片设置于所述连接层上，且位于所述绑定端子与阻挡图案形成的开口内；通过围绕绑定端子设置阻挡图案，使阻挡图案和绑定端子形成开口，开口的上端宽度大于开口的下端的宽度，使得在微型发光二极管芯片出现偏移时，微型发光二极管芯片能够从阻挡图案上滑落至绑定端子上，与绑定端子对位贴合，从而减少了偏移的微型发光二极管芯片的数量，缓解了现有Micro-LED显示面板存在Micro-LED芯片与绑定端子容易出现对位偏移，导致Micro-LED芯片脱落的问题。\n\n[0053]需要说明的是，所述开口用于使偏移的微型发光二极管芯片滑落在所述连接层上。\n\n[0054]在一种实施例中，如图2所示，所述显示面板还包括钝化层27。\n\n[0055]在一种实施例中，如图3所示，所述微型发光二极管芯片26包括发光层262、第一电极261和第二电极263，所述第一电极261设置于所述发光层262与所述绑定端子23之间，所述第二电极263设置于所述发光层262远离所述绑定端子23的一侧；在设置微型发光二极管芯片时，可以通过垂直向设置微型发光二极管芯片，使得第一电极与绑定端子连接，第二电极与公共电极连接，从而实现微型发光二极管芯片的连接，使得微型发光二极管芯片的工作。\n\n[0056]在一种实施例中，如图2所示，所述开口的截面形状为倒梯形，即使得阻挡图案与所述绑定端子形成夹角，使得微型发光二极管芯片在偏移时，会从阻挡图案形成的斜面上滑落到绑定端子上，从而使得发生偏移的微型发光二极管的数量减少，使得显示面板的显示正常。\n\n[0057]在一种实施例中，如图2所示，所述阻挡图案与所述绑定端子的延长线之间形成的夹角A的取值范围为30度至60度，在设置夹角时，为了避免夹角的取值较大时，阻挡图案会遮挡在绑定端子上，且微型发光二极管芯片在偏移时，会停留在阻挡图案时，取夹角的取值上限为60度，而在夹角较小时，微型发光二极管芯片会平铺在阻挡图案上，无法通过震动滑落到连接层上，与绑定端子贴合连接，因此，设置夹角的取值范围为30度至60度，从而使得阻挡图案保证一定的梯度，使得微型发光二极管芯片出现偏移时，能够从阻挡图案上滑落，但本申请实施例不限于此，夹角可以选择能够使偏移的微型发光二极管芯片滑落在连接层上的任一角度。\n\n[0058]在一种实施例中，在一种显示面板中，可以将所述阻挡图案设置于所述绑定端子左侧，在绑定端子左侧设置阻挡图案时，可以将阻挡图案设置在绑定端子左侧，然后在绑定微型发光二极管芯片时，可以将微型发光二极管芯片略微向左绑定，从而使得微型发光二极管芯片即使出现偏移，会向左进行偏移，而设置在绑定端子左侧的阻挡图案可以使得微型发光二极管芯片向绑定端子倾斜，在后续对显示面板进行震动，从而使得微型发光二极管芯片贴合在绑定端子上。\n\n[0059]在一种实施例中，在一种显示面板中，可以将所述阻挡图案设置于所述绑定端子右侧，在绑定端子右侧设置阻挡图案时，可以将阻挡图案设置于绑定端子右侧，然后在绑定微型发光二极管芯片时，将微型发光二极管芯片略微向右绑定，从而使得微型发光二极管芯片能够正常绑定或者向右偏移，而由于右侧具有阻挡图案，使得在后续对显示面板进行震动时，偏移到阻挡图案上的微型发光二极管芯片可以滑动到绑定端子上，使得微型发光二极管芯片与绑定端子贴合，从而完成微型发光二极管芯片的绑定。\n\n[0060]在一种实施例中，在一种显示面板中，可以将所述阻挡图案设置于所述绑定端子前侧，在绑定端子前侧设置阻挡图案时，可以将阻挡图案设置于绑定端子右侧，然后在绑定微型发光二极管芯片时，将微型发光二极管芯片略微向前绑定，从而使得微型发光二极管芯片可以正常绑定或者向前绑定，而由于上侧具有阻挡图案，使得后续可以对显示面板进行震动，从而使得偏移到阻挡图案上的微型发光二极管芯片可以滑动到绑定端子上，使得微型发光二极管芯片与绑定端子贴合，从而实现微型发光二极管芯片和绑定端子的对位贴合。\n\n[0061]在一种实施例中，在一种显示面板中，可以将所述阻挡图案设置于所述绑定端子后侧，通过在绑定端子后侧设置阻挡图案，在绑定微型发光二极管芯片时，通过将微型发光二极管芯片略微向后侧绑定，使得微型发光二极管芯片能够正常绑定在绑定端子上，或者微型发光二极管芯片向后偏移，而由于绑定端子后侧设置有阻挡图案，使得后续可以对显示面板进行震动，使得向后偏移的阻挡图案上的微型发光二极管芯片可以滑动到绑定端子上，使得微型发光二极管芯片与绑定端子贴合，从而实现微型发光二极管芯片和绑定端子的对位贴合。\n\n[0062]在一种实施例中，如图4所示，所述阻挡图案24围绕所述绑定端子23设置，所述阻挡图案24关于所述绑定端子23对称设置，在设置阻挡图案时，可以使得阻挡图案围绕绑定端子设置，从而使得在将微型发光二极管芯片绑定在绑定端子上时，微型发光二极管芯片出现偏移时，在向任意一侧偏移时，微型发光二极管芯片均可以从阻挡图案上滑落到绑定端子上，从而使得微型发光二极管芯片与绑定端子对位贴合，完成微型发光二极管芯片和绑定端子的绑定。\n\n[0063]在一种实施例中，所述阻挡图案与所述绑定端子接触的一侧为曲面，所述曲面的上端的宽度大于所述绑定端子的宽度，即在设置阻挡图案时，可以将阻挡图案设置为曲面，在阻挡图案的侧面为曲面时，在微型发光二极管芯片出现偏移时，微型发光二极管芯片也能从曲面上滑落到绑定端子上方，从而实现微型发光二极管芯片与绑定端子的贴合绑定。\n\n[0064]在一种实施例中，如图5所示，所述微型发光二极管芯片26包括发光层362、第一电极361、第二电极363，所述第一电极361与所述第二电极363设置于所述发光层362与所述绑定端子23之间，所述第一电极361连接第一绑定端子231，所述第二电极363连接所述第二绑定端子232；针对将第一电极和第二电极设置在同一侧的微型发光二极管芯片，通过将第一电极和第二电极分别连接到第一绑定端子和第二绑定端子，其中，第一绑定端子为像素电极层刻蚀形成，第二绑定端子为公共电极层刻蚀形成，微型发光二极管芯片与绑定端子连接，实现微型发光二极管芯片的正常工作。\n\n[0065]在一种实施例中，如图5所示，所述阻挡图案24围绕所述第一绑定端子231和所述第二绑定端子232设置，且所述阻挡图案24设置于所述第一绑定端子231与所述第二绑定端子232之间，为了避免微型发光二极管芯片的第一电极和第二电极偏移掉入第一绑定端子和第二绑定端子之间，可以在第一电极和第二电极之间设置阻挡图案，从而使得第一电极和第二电极处于绑定端子上方，在后续使偏移的微型发光二极管芯片正常绑定时，微型发光二极管芯片可以在绑定端子上方，不会出现微型发光二极管芯片的第一电极和第二电极在绑定端子之间的空隙内，从而使得微型发光二极管芯片正常工作。\n\n[0066]在一种实施例中，所所述第一绑定端子与所述第二绑定端子的厚度相同，位于所述第一绑定端子与所述第二绑定端子之间的阻挡图案的厚度，大于或者等于所述第一绑定端子的厚度，使得阻挡图案能够与第一绑定端子的厚度一致，或者大于第一绑定端子的厚度，使得第一电极和第二电极不会掉在第一绑定端子和第二绑定端子之间，从而使后续可以使偏移的微型发光二极管芯片正常绑定，正常工作。\n\n[0067]在一种实施例中，所述阻挡层的材料包括可溶性聚四氟乙烯、黑色光刻胶中的一种，采用柔性材料，可以避免阻挡层刮伤绑定端子和微型发光二极管芯片，同时，采用光刻胶，使得阻挡图案可以较好的与绑定端子粘结，从而避免出现阻挡图案与绑定端子脱落，使得阻挡图案能够使偏移的微型发光二极管芯片滑落到绑定端子上。\n\n[0068]在一种实施例中，所述阻挡图案的截面形状包括梯形、五边形中的一种，在设置阻挡图案时，使得阻挡图案与绑定端子之间形成斜面，可以设置阻挡图案的截面形成为梯形、五边形中的一种，但本申请实施例不限于此，其他能够实现偏移的微型发光二极管芯片从阻挡图案上滑落的形状为可以为阻挡图案的截面形状。\n\n[0069]在一种实施例中，所述阻挡层包括阵列设置的多列阻挡图案，相邻两列的阻挡图案之间形成有空隙，在设置阻挡图案时，可以使得各个阻挡图案分割设置，各个阻挡图案对应各个绑定端子，从而使得微型发光二极管芯片能够从阻挡图案上向绑定端子滑落，从而实现微型发光二极管芯片与绑定端子的对位贴合。\n\n[0070]在一种实施例中，所述阻挡图案的厚度范围为所述绑定端子的厚度的二分之三之二，即在设置阻挡图案时，可以使得阻挡图案的厚度为绑定端子的厚度的1.5倍至2倍，使得阻挡图案高出绑定端子，从而使得阻挡图案能够形成一定斜面，使得阻挡图案能够使偏移的微型发光二极管芯片从阻挡图案上滑落到绑定端子上，从而使得绑定端子与微型发光二极管芯片对位贴合。\n\n[0071]在一种实施例中，所述阻挡层包括阵列设置的多列阻挡图案，所述绑定端子包括阵列设置的多列绑定端子，相邻两列绑定端子之间共用一列阻挡图案，在设置阻挡图案时，可以使相邻的绑定端子共用阻挡图案，从而使得在制备阻挡图案时，制备工艺较为简单，同时，阻挡图案不易移动，从而使得阻挡图案能够较好的与绑定端子贴合，从而使得偏移的微型发光二极管芯片从阻挡图案上滑落到绑定端子上，从而使得微型发光二极管芯片与绑定端子贴合。\n\n[0072]在一种实施例中，所述微型发光二极管芯片包括Micro-LED芯片、迷你发光二极管芯片中的一种，在避免微型发光二极管芯片出现偏移，在绑定端子侧面设置阻挡图案时，可以针对具有Micro-LED芯片、迷你发光二极管芯片的显示面板设置，从而避免Micro-LED芯片、迷你发光二极管芯片出现脱落。\n\n[0073]在一种实施例中，连接层的材料包括锡。\n\n[0074]如图6所示，本申请实施例提供一种显示面板制备方法，该显示面板制备方法包括：\n\n[0075]S1，提供基板；其制备结果如图7中的(a)所示；\n\n[0076]S2，在所述基板上形成驱动电路层，并刻蚀所述驱动电路层形成用于驱动微型发光二极管芯片的驱动电路；其制备结果如图7中的(a)所示；\n\n[0077]S3，在所述驱动电路层上形成绑定端子；所述绑定端子与所述驱动电路对应；其制备结果如图7中的(a)所示；\n\n[0078]S4，在所述绑定端子上形成阻挡层，其制备结果如图7中的(b)所示；并刻蚀所述阻挡层形成围绕所述绑定端子设置的阻挡图案；其制备结果如图7中的(c)所示；且所述阻挡图案的厚度大于所述绑定端子的厚度，所述阻挡图案与所述绑定端子形成夹角，所述阻挡图案与所述绑定端子形成有开口，所述开口的上端的宽度大于所述开口的下端的宽度；\n\n[0079]S5，在所述绑定端子上形成连接层；所述连接层位于所述开口内；其制备结果如图8中的(a)所示；\n\n[0080]S6，在所述连接层上形成微型发光二极管芯片，形成显示面板；所述微型发光二极管芯片位于所述绑定端子与所述阻挡图案形成的开口内；其制备结果如图8中的(b)所示；\n\n[0081]S7，对所述显示面板进行震动处理，以使偏移的微型发光二极管芯片与所述绑定端子贴合；其制备结果如图8中的(c)所示；。\n\n[0082]本申请实施例提供一种显示面板制备方法，该显示面板制备方法制备的显示面板包括基板、驱动电路层、绑定端子、阻挡层、连接层和微型发光二极管芯片，所述驱动电路层设置于所述基板上，形成有用于驱动微型发光二极管芯片的驱动电路，所述绑定端子设置于所述驱动电路层上，并与所述驱动电路对应，所述阻挡层形成围绕所述绑定端子设置的阻挡图案，所述阻挡图案的厚度大于所述绑定端子的厚度，所述阻挡图案与所述绑定端子形成有开口，所述开口的上端的宽度大于所述开口的下端的宽度，所述连接层设置于所述绑定端子上，且位于所述开口内，所述微型发光二极管芯片设置于所述连接层上，且位于所述绑定端子与阻挡图案形成的开口内；通过围绕绑定端子设置阻挡图案，使阻挡图案和绑定端子形成开口，开口的上端宽度大于开口的下端的宽度，使得在微型发光二极管芯片出现偏移时，微型发光二极管芯片能够从阻挡图案上滑落至绑定端子上，与绑定端子对位贴合，从而减少了偏移的微型发光二极管芯片的数量，缓解了现有Micro-LED显示面板存在Micro-LED芯片与绑定端子容易出现对位偏移，导致Micro-LED芯片脱落的问题。\n\n[0083]在一种实施例中，对所述显示面板进行震动处理的步骤包括：对显示面板进行超声波或者微波震动处理。\n\n[0084]在一种实施例中，本申请实施例提供一种显示装置，该显示装置包括上述实施例中任一所述的显示面板。\n\n[0085]根据上述实施例可知：\n\n[0086]本申请实施例提供一种显示面板及其制备方法，该显示面板包括基板、驱动电路层、绑定端子、阻挡层、连接层和微型发光二极管芯片，所述驱动电路层设置于所述基板上，形成有用于驱动微型发光二极管芯片的驱动电路，所述绑定端子设置于所述驱动电路层上，并与所述驱动电路对应，所述阻挡层形成围绕所述绑定端子设置的阻挡图案，所述阻挡图案的厚度大于所述绑定端子的厚度，所述阻挡图案与所述绑定端子形成有开口，所述开口的上端的宽度大于所述开口的下端的宽度，所述连接层设置于所述绑定端子上，且位于所述开口内，所述微型发光二极管芯片设置于所述连接层上，且位于所述绑定端子与阻挡图案形成的开口内；通过围绕绑定端子设置阻挡图案，使阻挡图案和绑定端子形成开口，开口的上端宽度大于开口的下端的宽度，使得在微型发光二极管芯片出现偏移时，微型发光二极管芯片能够从阻挡图案上滑落至绑定端子上，与绑定端子对位贴合，从而减少了偏移的微型发光二极管芯片的数量，缓解了现有Micro-LED显示面板存在Micro-LED芯片与绑定端子容易出现对位偏移，导致Micro-LED芯片脱落的问题。\n\n[0087]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0088]以上对本申请实施例所提供的一种显示面板及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其是涉及一种显示面板及其制备方法。\n\n背景技术\n\n[0002]现有显示技术朝着Micro-LED(微型发光二极管)显示技术发展，在Micro-LED显示面板制备过程中，会需要使用巨量转移技术将Micro-LED芯片转移到对应位置，使得Micro-LED芯片正常显示，如图1所示，现有Micro-LED芯片在绑定到驱动电路上时，会连接层将Micro-LED芯片绑定在绑定端子上，但在实际过程中，由于Micro-LED芯片与绑定端子之间的对位精度较高，导致Micro-LED芯片容易与绑定端子之间出现对位偏移，导致Micro-LED芯片滑落，导致显示不良，同时，在绑定Micro-LED芯片时，Micro-LED芯片数量较大，会进一步导致Micro-LED芯片出现脱落的可能性增大。\n\n[0003]所以，现有Micro-LED显示面板存在Micro-LED芯片与绑定端子容易出现对位偏移，导致Micro-LED芯片脱落的问题。\n\n发明内容\n\n[0004]本申请实施例提供一种显示面板及其制备方法，用以缓解现有Micro-LED显示面板存在Micro-LED芯片与绑定端子容易出现对位偏移，导致Micro-LED芯片脱落的问题。\n\n[0005]本申请实施例提供一种显示面板，该显示面板包括：\n\n[0006]基板；\n\n[0007]驱动电路层，设置于所述基板上，形成有用于驱动微型发光二极管芯片的驱动电路；\n\n[0008]绑定端子，设置于所述驱动电路层上，并与所述驱动电路对应；\n\n[0009]阻挡层，形成围绕所述绑定端子设置的阻挡图案，所述阻挡图案的厚度大于所述绑定端子的厚度，所述阻挡图案与所述绑定端子形成有开口，所述开口的上端的宽度大于所述开口的下端的宽度；\n\n[0010]连接层，设置于所述绑定端子上，且位于所述开口内；\n\n[0011]微型发光二极管芯片，设置于所述连接层上，且位于所述绑定端子与阻挡图案形成的开口内。\n\n[0012]在一些实施例中，所述微型发光二极管芯片包括发光层、第一电极和第二电极，所述第一电极设置于所述发光层与所述绑定端子之间，所述第二电极设置于所述发光层远离所述绑定端子的一侧。\n\n[0013]在一些实施例中，所述开口的截面形状为倒梯形。\n\n[0014]在一些实施例中，所述阻挡图案与所述绑定端子的延长线之间形成的夹角的取值范围为30度至60度。\n\n[0015]在一些实施例中，所述阻挡图案与所述绑定端子接触的一侧为曲面，所述曲面的上端的宽度大于所述绑定端子的宽度。\n\n[0016]在一些实施例中，所述微型发光二极管芯片包括发光层、第一电极、第二电极，所述第一电极与所述第二电极设置于所述发光层与所述绑定端子之间，所述第一电极连接第一绑定端子，所述第二电极连接所述第二绑定端子。\n\n[0017]在一些实施例中，所述阻挡图案围绕所述第一绑定端子和所述第二绑定端子设置，且所述阻挡图案设置于所述第一绑定端子与所述第二绑定端子之间。\n\n[0018]在一些实施例中，所述第一绑定端子与所述第二绑定端子的厚度相同，位于所述第一绑定端子与所述第二绑定端子之间的阻挡图案的厚度，大于或者等于所述第一绑定端子的厚度。\n\n[0019]在一些实施例中，所述阻挡层的材料包括可溶性聚四氟乙烯、黑色光刻胶中的一种。\n\n[0020]同时，本申请实施例提供一种显示面板制备方法，该显示面板制备方法包括：\n\n[0021]提供基板；\n\n[0022]在所述基板上形成驱动电路层，并刻蚀所述驱动电路层形成用于驱动微型发光二极管芯片的驱动电路；\n\n[0023]在所述驱动电路层上形成绑定端子；所述绑定端子与所述驱动电路对应；\n\n[0024]在所述绑定端子上形成阻挡层，并刻蚀所述阻挡层形成围绕所述绑定端子设置的阻挡图案；且所述阻挡图案的厚度大于所述绑定端子的厚度，所述阻挡图案与所述绑定端子形成夹角，所述阻挡图案与所述绑定端子形成有开口，所述开口的上端的宽度大于所述开口的下端的宽度；\n\n[0025]在所述绑定端子上形成连接层；所述连接层位于所述开口内；\n\n[0026]在所述连接层上形成微型发光二极管芯片，形成显示面板；所述微型发光二极管芯片位于所述绑定端子与所述阻挡图案形成的开口内；\n\n[0027]对所述显示面板进行震动处理，以使偏移的微型发光二极管芯片与所述绑定端子贴合。\n\n[0028]有益效果：本申请实施例提供一种显示面板及其制备方法，该显示面板包括基板、驱动电路层、绑定端子、阻挡层、连接层和微型发光二极管芯片，所述驱动电路层设置于所述基板上，形成有用于驱动微型发光二极管芯片的驱动电路，所述绑定端子设置于所述驱动电路层上，并与所述驱动电路对应，所述阻挡层形成围绕所述绑定端子设置的阻挡图案，所述阻挡图案的厚度大于所述绑定端子的厚度，所述阻挡图案与所述绑定端子形成有开口，所述开口的上端的宽度大于所述开口的下端的宽度，所述连接层设置于所述绑定端子上，且位于所述开口内，所述微型发光二极管芯片设置于所述连接层上，且位于所述绑定端子与阻挡图案形成的开口内；通过围绕绑定端子设置阻挡图案，使阻挡图案和绑定端子形成开口，开口的上端宽度大于开口的下端的宽度，使得在微型发光二极管芯片出现偏移时，微型发光二极管芯片能够从阻挡图案上滑落至绑定端子上，与绑定端子对位贴合，从而减少了偏移的微型发光二极管芯片的数量，缓解了现有Micro-LED显示面板存在Micro-LED芯片与绑定端子容易出现对位偏移，导致Micro-LED芯片脱落的问题。\n\n附图说明\n\n[0029]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0030]图1为现有Micro-LED显示面板的示意图。\n\n[0031]图2为本申请实施例提供的显示面板的第一示意图。\n\n[0032]图3为本申请实施例提供的显示面板的第二示意图。\n\n[0033]图4为本申请实施例提供的显示面板的第三示意图。\n\n[0034]图5为本申请实施例提供的显示面板的第四示意图。\n\n[0035]图6为本申请实施例提供的显示面板制备方法的流程图。\n\n[0036]图7为本申请实施例提供的显示面板制备方法的各个步骤对应的显示面板的第一示意图。\n\n[0037]图8为本申请实施例提供的显示面板制备方法的各个步骤对应的显示面板的第二示意图。\n\n具体实施方式\n\n[0038]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0039]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0040]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0041]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0042]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0043]本申请实施例针对现有Micro-LED显示面板存在Micro-LED芯片与绑定端子容易出现对位偏移，导致Micro-LED芯片脱落的问题，本申请实施例用以缓解该问题。\n\n[0044]如图1所示，现有Micro-LED显示面板包括基板11、设置在基板11上的驱动电路12、设置在驱动电路12上的钝化层13，与驱动电路12连接的绑定端子14，在绑定端子上设置一层金属15，然后将Micro-LED芯片16绑定在绑定端子14上，如图1所示，由于Micro-LED芯片与绑定端子之间的对位精度要求较高，导致Micro-LED芯片16与绑定端子14之间出现对位偏移，导致Micro-LED芯片脱落，且由于需要绑定的Micro-LED芯片数量较大，导致Micro-LED芯片出现脱落的可能性增大，所以，现有Micro-LED显示面板存在Micro-LED芯片与绑定端子容易出现对位偏移，导致Micro-LED芯片脱落的问题。\n\n[0045]如图2所示，本申请实施例提供一种显示面板，该显示面板包括：\n\n[0046]基板21；\n\n[0047]驱动电路层，设置于所述基板21上，形成有用于驱动微型发光二极管芯片26的驱动电路22；\n\n[0048]绑定端子23，设置于所述驱动电路层22上，并与所述驱动电路22对应；\n\n[0049]阻挡层，形成围绕所述绑定端子23设置的阻挡图案24，所述阻挡图案24的厚度h1大于所述绑定端子23的厚度h2，所述阻挡图案24与所述绑定端子23形成有开口28，所述开口28的上端的宽度L1大于所述开口28的下端的宽度L2；\n\n[0050]连接层25，设置于所述绑定端子23上，且位于所述开口28内；\n\n[0051]微型发光二极管芯片26，设置于所述连接层25上，且位于所述绑定端子23与阻挡图案24形成的开口28内，所述开口28用于使偏移的微型发光二极管芯片26滑落在所述连接层上。\n\n[0052]本申请实施例提供一种显示面板及其制备方法，该显示面板包括基板、驱动电路层、绑定端子、阻挡层、连接层和微型发光二极管芯片，所述驱动电路层设置于所述基板上，形成有用于驱动微型发光二极管芯片的驱动电路，所述绑定端子设置于所述驱动电路层上，并与所述驱动电路对应，所述阻挡层形成围绕所述绑定端子设置的阻挡图案，所述阻挡图案的厚度大于所述绑定端子的厚度，所述阻挡图案与所述绑定端子形成有开口，所述开口的上端的宽度大于所述开口的下端的宽度，所述连接层设置于所述绑定端子上，且位于所述开口内，所述微型发光二极管芯片设置于所述连接层上，且位于所述绑定端子与阻挡图案形成的开口内；通过围绕绑定端子设置阻挡图案，使阻挡图案和绑定端子形成开口，开口的上端宽度大于开口的下端的宽度，使得在微型发光二极管芯片出现偏移时，微型发光二极管芯片能够从阻挡图案上滑落至绑定端子上，与绑定端子对位贴合，从而减少了偏移的微型发光二极管芯片的数量，缓解了现有Micro-LED显示面板存在Micro-LED芯片与绑定端子容易出现对位偏移，导致Micro-LED芯片脱落的问题。\n\n[0053]需要说明的是，所述开口用于使偏移的微型发光二极管芯片滑落在所述连接层上。\n\n[0054]在一种实施例中，如图2所示，所述显示面板还包括钝化层27。\n\n[0055]在一种实施例中，如图3所示，所述微型发光二极管芯片26包括发光层262、第一电极261和第二电极263，所述第一电极261设置于所述发光层262与所述绑定端子23之间，所述第二电极263设置于所述发光层262远离所述绑定端子23的一侧；在设置微型发光二极管芯片时，可以通过垂直向设置微型发光二极管芯片，使得第一电极与绑定端子连接，第二电极与公共电极连接，从而实现微型发光二极管芯片的连接，使得微型发光二极管芯片的工作。\n\n[0056]在一种实施例中，如图2所示，所述开口的截面形状为倒梯形，即使得阻挡图案与所述绑定端子形成夹角，使得微型发光二极管芯片在偏移时，会从阻挡图案形成的斜面上滑落到绑定端子上，从而使得发生偏移的微型发光二极管的数量减少，使得显示面板的显示正常。\n\n[0057]在一种实施例中，如图2所示，所述阻挡图案与所述绑定端子的延长线之间形成的夹角A的取值范围为30度至60度，在设置夹角时，为了避免夹角的取值较大时，阻挡图案会遮挡在绑定端子上，且微型发光二极管芯片在偏移时，会停留在阻挡图案时，取夹角的取值上限为60度，而在夹角较小时，微型发光二极管芯片会平铺在阻挡图案上，无法通过震动滑落到连接层上，与绑定端子贴合连接，因此，设置夹角的取值范围为30度至60度，从而使得阻挡图案保证一定的梯度，使得微型发光二极管芯片出现偏移时，能够从阻挡图案上滑落，但本申请实施例不限于此，夹角可以选择能够使偏移的微型发光二极管芯片滑落在连接层上的任一角度。\n\n[0058]在一种实施例中，在一种显示面板中，可以将所述阻挡图案设置于所述绑定端子左侧，在绑定端子左侧设置阻挡图案时，可以将阻挡图案设置在绑定端子左侧，然后在绑定微型发光二极管芯片时，可以将微型发光二极管芯片略微向左绑定，从而使得微型发光二极管芯片即使出现偏移，会向左进行偏移，而设置在绑定端子左侧的阻挡图案可以使得微型发光二极管芯片向绑定端子倾斜，在后续对显示面板进行震动，从而使得微型发光二极管芯片贴合在绑定端子上。\n\n[0059]在一种实施例中，在一种显示面板中，可以将所述阻挡图案设置于所述绑定端子右侧，在绑定端子右侧设置阻挡图案时，可以将阻挡图案设置于绑定端子右侧，然后在绑定微型发光二极管芯片时，将微型发光二极管芯片略微向右绑定，从而使得微型发光二极管芯片能够正常绑定或者向右偏移，而由于右侧具有阻挡图案，使得在后续对显示面板进行震动时，偏移到阻挡图案上的微型发光二极管芯片可以滑动到绑定端子上，使得微型发光二极管芯片与绑定端子贴合，从而完成微型发光二极管芯片的绑定。\n\n[0060]在一种实施例中，在一种显示面板中，可以将所述阻挡图案设置于所述绑定端子前侧，在绑定端子前侧设置阻挡图案时，可以将阻挡图案设置于绑定端子右侧，然后在绑定微型发光二极管芯片时，将微型发光二极管芯片略微向前绑定，从而使得微型发光二极管芯片可以正常绑定或者向前绑定，而由于上侧具有阻挡图案，使得后续可以对显示面板进行震动，从而使得偏移到阻挡图案上的微型发光二极管芯片可以滑动到绑定端子上，使得微型发光二极管芯片与绑定端子贴合，从而实现微型发光二极管芯片和绑定端子的对位贴合。\n\n[0061]在一种实施例中，在一种显示面板中，可以将所述阻挡图案设置于所述绑定端子后侧，通过在绑定端子后侧设置阻挡图案，在绑定微型发光二极管芯片时，通过将微型发光二极管芯片略微向后侧绑定，使得微型发光二极管芯片能够正常绑定在绑定端子上，或者微型发光二极管芯片向后偏移，而由于绑定端子后侧设置有阻挡图案，使得后续可以对显示面板进行震动，使得向后偏移的阻挡图案上的微型发光二极管芯片可以滑动到绑定端子上，使得微型发光二极管芯片与绑定端子贴合，从而实现微型发光二极管芯片和绑定端子的对位贴合。\n\n[0062]在一种实施例中，如图4所示，所述阻挡图案24围绕所述绑定端子23设置，所述阻挡图案24关于所述绑定端子23对称设置，在设置阻挡图案时，可以使得阻挡图案围绕绑定端子设置，从而使得在将微型发光二极管芯片绑定在绑定端子上时，微型发光二极管芯片出现偏移时，在向任意一侧偏移时，微型发光二极管芯片均可以从阻挡图案上滑落到绑定端子上，从而使得微型发光二极管芯片与绑定端子对位贴合，完成微型发光二极管芯片和绑定端子的绑定。\n\n[0063]在一种实施例中，所述阻挡图案与所述绑定端子接触的一侧为曲面，所述曲面的上端的宽度大于所述绑定端子的宽度，即在设置阻挡图案时，可以将阻挡图案设置为曲面，在阻挡图案的侧面为曲面时，在微型发光二极管芯片出现偏移时，微型发光二极管芯片也能从曲面上滑落到绑定端子上方，从而实现微型发光二极管芯片与绑定端子的贴合绑定。\n\n[0064]在一种实施例中，如图5所示，所述微型发光二极管芯片26包括发光层362、第一电极361、第二电极363，所述第一电极361与所述第二电极363设置于所述发光层362与所述绑定端子23之间，所述第一电极361连接第一绑定端子231，所述第二电极363连接所述第二绑定端子232；针对将第一电极和第二电极设置在同一侧的微型发光二极管芯片，通过将第一电极和第二电极分别连接到第一绑定端子和第二绑定端子，其中，第一绑定端子为像素电极层刻蚀形成，第二绑定端子为公共电极层刻蚀形成，微型发光二极管芯片与绑定端子连接，实现微型发光二极管芯片的正常工作。\n\n[0065]在一种实施例中，如图5所示，所述阻挡图案24围绕所述第一绑定端子231和所述第二绑定端子232设置，且所述阻挡图案24设置于所述第一绑定端子231与所述第二绑定端子232之间，为了避免微型发光二极管芯片的第一电极和第二电极偏移掉入第一绑定端子和第二绑定端子之间，可以在第一电极和第二电极之间设置阻挡图案，从而使得第一电极和第二电极处于绑定端子上方，在后续使偏移的微型发光二极管芯片正常绑定时，微型发光二极管芯片可以在绑定端子上方，不会出现微型发光二极管芯片的第一电极和第二电极在绑定端子之间的空隙内，从而使得微型发光二极管芯片正常工作。\n\n[0066]在一种实施例中，所所述第一绑定端子与所述第二绑定端子的厚度相同，位于所述第一绑定端子与所述第二绑定端子之间的阻挡图案的厚度，大于或者等于所述第一绑定端子的厚度，使得阻挡图案能够与第一绑定端子的厚度一致，或者大于第一绑定端子的厚度，使得第一电极和第二电极不会掉在第一绑定端子和第二绑定端子之间，从而使后续可以使偏移的微型发光二极管芯片正常绑定，正常工作。\n\n[0067]在一种实施例中，所述阻挡层的材料包括可溶性聚四氟乙烯、黑色光刻胶中的一种，采用柔性材料，可以避免阻挡层刮伤绑定端子和微型发光二极管芯片，同时，采用光刻胶，使得阻挡图案可以较好的与绑定端子粘结，从而避免出现阻挡图案与绑定端子脱落，使得阻挡图案能够使偏移的微型发光二极管芯片滑落到绑定端子上。\n\n[0068]在一种实施例中，所述阻挡图案的截面形状包括梯形、五边形中的一种，在设置阻挡图案时，使得阻挡图案与绑定端子之间形成斜面，可以设置阻挡图案的截面形成为梯形、五边形中的一种，但本申请实施例不限于此，其他能够实现偏移的微型发光二极管芯片从阻挡图案上滑落的形状为可以为阻挡图案的截面形状。\n\n[0069]在一种实施例中，所述阻挡层包括阵列设置的多列阻挡图案，相邻两列的阻挡图案之间形成有空隙，在设置阻挡图案时，可以使得各个阻挡图案分割设置，各个阻挡图案对应各个绑定端子，从而使得微型发光二极管芯片能够从阻挡图案上向绑定端子滑落，从而实现微型发光二极管芯片与绑定端子的对位贴合。\n\n[0070]在一种实施例中，所述阻挡图案的厚度范围为所述绑定端子的厚度的二分之三之二，即在设置阻挡图案时，可以使得阻挡图案的厚度为绑定端子的厚度的1.5倍至2倍，使得阻挡图案高出绑定端子，从而使得阻挡图案能够形成一定斜面，使得阻挡图案能够使偏移的微型发光二极管芯片从阻挡图案上滑落到绑定端子上，从而使得绑定端子与微型发光二极管芯片对位贴合。\n\n[0071]在一种实施例中，所述阻挡层包括阵列设置的多列阻挡图案，所述绑定端子包括阵列设置的多列绑定端子，相邻两列绑定端子之间共用一列阻挡图案，在设置阻挡图案时，可以使相邻的绑定端子共用阻挡图案，从而使得在制备阻挡图案时，制备工艺较为简单，同时，阻挡图案不易移动，从而使得阻挡图案能够较好的与绑定端子贴合，从而使得偏移的微型发光二极管芯片从阻挡图案上滑落到绑定端子上，从而使得微型发光二极管芯片与绑定端子贴合。\n\n[0072]在一种实施例中，所述微型发光二极管芯片包括Micro-LED芯片、迷你发光二极管芯片中的一种，在避免微型发光二极管芯片出现偏移，在绑定端子侧面设置阻挡图案时，可以针对具有Micro-LED芯片、迷你发光二极管芯片的显示面板设置，从而避免Micro-LED芯片、迷你发光二极管芯片出现脱落。\n\n[0073]在一种实施例中，连接层的材料包括锡。\n\n[0074]如图6所示，本申请实施例提供一种显示面板制备方法，该显示面板制备方法包括：\n\n[0075]S1，提供基板；其制备结果如图7中的(a)所示；\n\n[0076]S2，在所述基板上形成驱动电路层，并刻蚀所述驱动电路层形成用于驱动微型发光二极管芯片的驱动电路；其制备结果如图7中的(a)所示；\n\n[0077]S3，在所述驱动电路层上形成绑定端子；所述绑定端子与所述驱动电路对应；其制备结果如图7中的(a)所示；\n\n[0078]S4，在所述绑定端子上形成阻挡层，其制备结果如图7中的(b)所示；并刻蚀所述阻挡层形成围绕所述绑定端子设置的阻挡图案；其制备结果如图7中的(c)所示；且所述阻挡图案的厚度大于所述绑定端子的厚度，所述阻挡图案与所述绑定端子形成夹角，所述阻挡图案与所述绑定端子形成有开口，所述开口的上端的宽度大于所述开口的下端的宽度；\n\n[0079]S5，在所述绑定端子上形成连接层；所述连接层位于所述开口内；其制备结果如图8中的(a)所示；\n\n[0080]S6，在所述连接层上形成微型发光二极管芯片，形成显示面板；所述微型发光二极管芯片位于所述绑定端子与所述阻挡图案形成的开口内；其制备结果如图8中的(b)所示；\n\n[0081]S7，对所述显示面板进行震动处理，以使偏移的微型发光二极管芯片与所述绑定端子贴合；其制备结果如图8中的(c)所示；。\n\n[0082]本申请实施例提供一种显示面板制备方法，该显示面板制备方法制备的显示面板包括基板、驱动电路层、绑定端子、阻挡层、连接层和微型发光二极管芯片，所述驱动电路层设置于所述基板上，形成有用于驱动微型发光二极管芯片的驱动电路，所述绑定端子设置于所述驱动电路层上，并与所述驱动电路对应，所述阻挡层形成围绕所述绑定端子设置的阻挡图案，所述阻挡图案的厚度大于所述绑定端子的厚度，所述阻挡图案与所述绑定端子形成有开口，所述开口的上端的宽度大于所述开口的下端的宽度，所述连接层设置于所述绑定端子上，且位于所述开口内，所述微型发光二极管芯片设置于所述连接层上，且位于所述绑定端子与阻挡图案形成的开口内；通过围绕绑定端子设置阻挡图案，使阻挡图案和绑定端子形成开口，开口的上端宽度大于开口的下端的宽度，使得在微型发光二极管芯片出现偏移时，微型发光二极管芯片能够从阻挡图案上滑落至绑定端子上，与绑定端子对位贴合，从而减少了偏移的微型发光二极管芯片的数量，缓解了现有Micro-LED显示面板存在Micro-LED芯片与绑定端子容易出现对位偏移，导致Micro-LED芯片脱落的问题。\n\n[0083]在一种实施例中，对所述显示面板进行震动处理的步骤包括：对显示面板进行超声波或者微波震动处理。\n\n[0084]在一种实施例中，本申请实施例提供一种显示装置，该显示装置包括上述实施例中任一所述的显示面板。\n\n[0085]根据上述实施例可知：\n\n[0086]本申请实施例提供一种显示面板及其制备方法，该显示面板包括基板、驱动电路层、绑定端子、阻挡层、连接层和微型发光二极管芯片，所述驱动电路层设置于所述基板上，形成有用于驱动微型发光二极管芯片的驱动电路，所述绑定端子设置于所述驱动电路层上，并与所述驱动电路对应，所述阻挡层形成围绕所述绑定端子设置的阻挡图案，所述阻挡图案的厚度大于所述绑定端子的厚度，所述阻挡图案与所述绑定端子形成有开口，所述开口的上端的宽度大于所述开口的下端的宽度，所述连接层设置于所述绑定端子上，且位于所述开口内，所述微型发光二极管芯片设置于所述连接层上，且位于所述绑定端子与阻挡图案形成的开口内；通过围绕绑定端子设置阻挡图案，使阻挡图案和绑定端子形成开口，开口的上端宽度大于开口的下端的宽度，使得在微型发光二极管芯片出现偏移时，微型发光二极管芯片能够从阻挡图案上滑落至绑定端子上，与绑定端子对位贴合，从而减少了偏移的微型发光二极管芯片的数量，缓解了现有Micro-LED显示面板存在Micro-LED芯片与绑定端子容易出现对位偏移，导致Micro-LED芯片脱落的问题。\n\n[0087]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0088]以上对本申请实施例所提供的一种显示面板及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10811, 23865, '技术领域\n\n[0001]本申请涉及显示领域，特别涉及一种微型发光二极管及其制作方法。\n\n背景技术\n\n[0002]微发光二极管(Micro LED)技术是指在衬底上以高密度集成的微小尺寸的LED阵列。作为新兴显示技术，微发光二极管显示相较于LCD、OLED显示有较多优势，如较低的功耗，较高的色域，较快的相应速率等，但其技术难度大于LCD或OLED。目前，微发光二极管技术正开始发展，工业界正期待有高品质的微发光二极管产品进入市场。高品质微发光二极管产品会对市场上已有的诸如LCD/OLED的传统显示产品产生深刻影响。\n\n[0003]在制造微发光二极管的过程中，首先在施主晶圆上形成微发光二极管，接着将微发光二极管转移到接受衬底上，接受衬底例如是显示屏；而由于需要把巨量的微发光二极管从母版转移到目标显示基板。而此转移方法工作量较大，且转移分散效率低。\n\n[0004]本发明基于此技术问题，提出了下列技术方案。\n\n发明内容\n\n[0005]本申请提供一种微型发光二极管及其制作方法，以解决现有微型发光二极管转移分散效率低的技术问题。\n\n[0006]为解决上述问题，本申请提供的技术方案如下：\n\n[0007]本申请提供一种微型发光二极管的制作方法，其包括：\n\n[0008]在第一衬底上形成一第一无机层，经第一次图案化处理形成多个无机单体；\n\n[0009]在所述第一衬底上形成一发光层，经第二次图案化处理形成多个间隔设置的第一单体和第二单体；\n\n[0010]将所述第一衬底与所述第二衬底的第一区域相对设置，利用第一激光使所述第一单体与所述第一衬底分离，并形成于所述第二衬底的第一区域上；\n\n[0011]将所述第一衬底与所述第二衬底的第二区域相对设置，利用第二激光使所述第二单体与所述第一衬底分离，并形成于所述第二衬底的第二区域上。\n\n[0012]在本申请的制作方法中，\n\n[0013]在第一衬底上形成一第一无机层，经第一次图案化处理形成多个无机单体的步骤包括：\n\n[0014]在第一衬底上形成一无机薄膜层；\n\n[0015]在所述无机薄膜层上涂覆第一光阻层；\n\n[0016]利用第一掩膜版对所述第一光阻层及无机薄膜层进行曝光、显影及蚀刻处理，使所述无机层薄膜形成多个呈阵列分布的无机单体；\n\n[0017]剥离所述第一光阻层；\n\n[0018]在本申请的制作方法中，所述第一无机薄膜层的材料包括硅。\n\n[0019]在本申请的制作方法中，\n\n[0020]在所述第一衬底上形成一发光层，经第二次图案化处理形成多个间隔设置的第一单体和第二单体的步骤包括：\n\n[0021]利用金属有机化合物化学气相沉淀在所述第一衬底上形成一LED发光薄膜层；\n\n[0022]在所述LED发光薄膜层上涂覆第二光阻层；\n\n[0023]利用第二掩膜版对所述第二光阻层及所述LED发光薄膜层进行曝光、显影及蚀刻处理，使所述LED发光薄膜层形成多个发光单体；\n\n[0024]剥离所述第二光阻层；\n\n[0025]其中，所述第一单体包括所述无机单体以及所述发光单体，所述第二单体包括所述发光单体。\n\n[0026]在本申请的制作方法中，相邻两个所述无机单体的间距为相邻两个所述发光单体的间距的二分之一。\n\n[0027]在本申请的制作方法中，\n\n[0028]所述第一激光的波长小于所述第二激光的波长。\n\n[0029]在本申请的制作方法中，\n\n[0030]位于所述第二衬底上相邻所述第一单体与所述第二单体的间距与位于所述第一衬底上的相邻两个所述无机单体的间距相等。\n\n[0031]在本申请的制作方法中，\n\n[0032]所述微型发光二极管的制作方法还包括：\n\n[0033]利用剥离工艺将位于所述发光单体上的所述无机单体剥离。\n\n[0034]在本申请的制作方法中，\n\n[0035]所述第一衬底及所述第二衬底的材料包括蓝宝石。\n\n[0036]本申请还提出了一种微型发光二极管，其中，所述微型发光二极管利用上述微型发光二极管的制作方法制备。\n\n[0037]有益效果：本申请提出了一种微型发光二极管及其制作方法，该制作方法包括在第一衬底上形成间隔设置的由LED发光单元构成的第一单体、及由无机单体与LED发光单体的组合单体，并通过无机单体与LED发光单体剧透不同的带隙宽度的原理从第一衬底转移至第二衬底上，完成该微型发光二极管的转移。本申请通过利用不同波长的镭射激光使得LED发光单体从第一衬底转移至第二衬底上，减小了工作量，提高了转移分散率。\n\n附图说明\n\n[0038]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0039]图1为本申请微型发光二极管制作方法的步骤图；\n\n[0040]图2A～图2E为本申请微型发光二极管制作方法的工艺流程图。\n\n具体实施方式\n\n[0041]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0042]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0043]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0044]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0045]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0046]请参阅图1，图1为本申请微型发光二极管制作方法的步骤图。\n\n[0047]请参阅图2A～图2E，图2A～图2E为本申请微型发光二极管制作方法的工艺流程图。\n\n[0048]所述微型发光二极管的制作方法包括：\n\n[0049]S10、在第一衬底10上形成一第一无机层，经第一次图案化处理形成多个无机单体201；\n\n[0050]请参阅图2A，步骤S10具体包括：\n\n[0051]S101、在第一衬底10上形成一无机薄膜层；\n\n[0052]所述第一衬底10为一圆晶衬底基板。\n\n[0053]在本实施例中，所述第一衬底10可以为蓝宝石衬底基板。\n\n[0054]利用沉积工艺在所述第一衬底10上沉积一无机薄膜层。\n\n[0055]在本实施例中，所述无机薄膜层的材料可以为单晶硅或者氮化硅等，本申请不作具体的限制。\n\n[0056]S102、在所述无机薄膜层上涂覆第一光阻层；\n\n[0057]S103、利用第一掩膜版对所述第一光阻层及无机薄膜层进行曝光、显影及蚀刻处理，使所述无机层薄膜形成多个呈阵列分布的无机单体201；\n\n[0058]S104、剥离所述第一光阻层。\n\n[0059]S20、在所述第一衬底10上形成一发光层，经第二次图案化处理形成多个间隔设置的第一单体20和第二单体30；\n\n[0060]请参阅图2B，步骤S20具体包括：\n\n[0061]S201、利用金属有机化合物化学气相沉淀在所述第一衬底10上形成一LED发光薄膜层；\n\n[0062]本步骤中发光层的材料可以为Mico-LED、Mini-LED等，本申请不作具体限制。\n\n[0063]S202、在所述LED发光薄膜层上涂覆第二光阻层；\n\n[0064]S203、利用第二掩膜版对所述第二光阻层及所述LED发光薄膜层进行曝光、显影及蚀刻处理，使所述LED发光薄膜层形成多个发光单体202；\n\n[0065]S204、剥离所述第二光阻层；\n\n[0066]由于所述无机单体201在本实施例中作为过渡层使用，因此所述无机单体201的厚度尽量小于所述发光单体202的厚度。但是具体厚度本申请没有限制。\n\n[0067]在本实施例中，所述第二掩膜版开口的密度大于所述第一掩膜版开口的密度。\n\n[0068]在本实施例中，所述第二掩膜版开口的大小与所述第一掩膜版开口的大小相等。\n\n[0069]因此本申请中发光单体202在所述第一衬底10上的正投影与所述无机单体201在所述第一衬底10上的正投影重合。\n\n[0070]在本实施例中，所述第一单体20包括所述无机单体201以及所述发光单体202，且所述发光单体202覆盖所述无机单体201。\n\n[0071]在本实施例中，所述第二单体30包括所述发光单体202。\n\n[0072]在本实施例中，所述第一单体20与所述第二单体30间隔设置。\n\n[0073]在本实施例中，相邻两个所述无机单体201的间距为相邻两个所述发光单体202的间距的二分之一。\n\n[0074]S30、将所述第一衬底10与所述第二衬底40的第一区域401相对设置，利用第一激光使所述第一单体20与所述第一衬底10分离，并形成于所述第二衬底40的第一区域401上401；\n\n[0075]请参阅图2C，步骤S30具体包括：\n\n[0076]S301、提供一第二衬底40，利用对位装置将所述第一衬底10与所述第二衬底40相对设置且进行对位；\n\n[0077]在本实施例中，所述第二衬底40的材料可以与所述第一衬底10的相同，所述第二衬底40的材料可以为蓝宝石衬底基板。\n\n[0078]在本实施例中，所述第一衬底10的面积小于所述第二衬底40的面积。所述对位装置将所述第一衬底10在所述所述第二衬底40上的正投影位于所述第二衬底40的第一区域401上。\n\n[0079]S302、利用第一激光照射所述无机单体201，使得所述无机单体201与所述第一衬底10分离，使得所述第一单体20落入所述所述第二衬底40的所述第一区域401上。\n\n[0080]S40、将所述第一衬底10与所述第二衬底40的第二区域402相对设置，利用第二激光使所述第二单体30与所述第一衬底10分离，并形成于所述第二衬底40的第二区域402上。\n\n[0081]请参阅图2D，步骤S40具体包括：\n\n[0082]S301、利用对位装置将所述第一衬底10与所述第二衬底40的第二区域402进行对位；\n\n[0083]S302、利用第二激光照射所述第一衬底10上的发光单体202，使得所述发光单体202与所述第一衬底10分离，使得所述发光单体202落入所述所述第二衬底40的所述第二区域402上。\n\n[0084]在步骤S30～S40中，由于蓝宝石衬底的带隙宽度大于发光单体202的带隙宽度，所述发光单体202的带隙宽度大于所述无机单体201的带隙宽度。因此根据对该三种材料照射不同能量的镭射激光，使之相互脱离。\n\n[0085]在本实施例中，所述第一激光的波长小于所述第二激光的波长。所述第一激光的能量小于所述第二激光的能量。\n\n[0086]当所述第一衬底10及以上的材料受到第一激光照射时，因所述无机单体201的带隙宽度最小，所述无机单体201受到第一激光照射后，与所述第一衬底10脱离，所述第一单体20落入所述第二衬底40的第一区域401内。\n\n[0087]当所述第一衬底10及以上的材料受到第二激光照射时，因所述发光单体202的带隙宽度小于所述蓝宝石衬底的带隙宽度，所述发光单体202受到第二激光照射后，与所述第一衬底10脱离，所述第二单体30落入所述第二衬底40的第二区域402内，完成所述发光单体202的转移。\n\n[0088]在本实施例中，位于所述第二衬底40上相邻所述第一单体20与所述第二单体30的间距与位于所述第一衬底10上的相邻两个所述无机单体201的间距相等。\n\n[0089]在本实施例中，所述第一区域401与第二区域402不相交。\n\n[0090]请参阅图2E，所述微型发光二极管的制作方法还包括：\n\n[0091]S50、利用剥离工艺将位于所述发光单体202上的所述无机单体201剥离。\n\n[0092]本步骤的剥离工艺为与步骤S30及S40相同的激光镭射工艺。通过利用第三波长的激光照射第二衬底40及以上的的第一单体20，所述无机受到第三激光照射后，与所述发光单体202脱离。\n\n[0093]然后进行所述微型发光二极管后续制程工艺，由于后续制程工艺为现有技术，本申请不再赘述。\n\n[0094]本申请还提出了一种微型发光二极管，其中，所述微型发光二极管利用上述微型发光二极管的制作方法制备。\n\n[0095]所述微型发光二极管的具体结构及原理与上述微型发光二极管的制备方法相同或相似，本申请不再赘述。\n\n[0096]本申请提出了一种微型发光二极管及其制作方法，该制作方法包括在第一衬底上形成间隔设置的由LED发光单元构成的第一单体、及由无机单体与LED发光单体的组合单体，并通过无机单体与LED发光单体剧透不同的带隙宽度的原理从第一衬底转移至第二衬底上，完成该微型发光二极管的转移。本申请通过利用不同波长的镭射激光使得LED发光单体从第一衬底转移至第二衬底上，减小了工作量，提高了转移分散率。\n\n[0097]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0098]以上对本申请实施例所提供的一种电子装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示领域，特别涉及一种微型发光二极管及其制作方法。\n\n背景技术\n\n[0002]微发光二极管(Micro LED)技术是指在衬底上以高密度集成的微小尺寸的LED阵列。作为新兴显示技术，微发光二极管显示相较于LCD、OLED显示有较多优势，如较低的功耗，较高的色域，较快的相应速率等，但其技术难度大于LCD或OLED。目前，微发光二极管技术正开始发展，工业界正期待有高品质的微发光二极管产品进入市场。高品质微发光二极管产品会对市场上已有的诸如LCD/OLED的传统显示产品产生深刻影响。\n\n[0003]在制造微发光二极管的过程中，首先在施主晶圆上形成微发光二极管，接着将微发光二极管转移到接受衬底上，接受衬底例如是显示屏；而由于需要把巨量的微发光二极管从母版转移到目标显示基板。而此转移方法工作量较大，且转移分散效率低。\n\n[0004]本发明基于此技术问题，提出了下列技术方案。\n\n发明内容\n\n[0005]本申请提供一种微型发光二极管及其制作方法，以解决现有微型发光二极管转移分散效率低的技术问题。\n\n[0006]为解决上述问题，本申请提供的技术方案如下：\n\n[0007]本申请提供一种微型发光二极管的制作方法，其包括：\n\n[0008]在第一衬底上形成一第一无机层，经第一次图案化处理形成多个无机单体；\n\n[0009]在所述第一衬底上形成一发光层，经第二次图案化处理形成多个间隔设置的第一单体和第二单体；\n\n[0010]将所述第一衬底与所述第二衬底的第一区域相对设置，利用第一激光使所述第一单体与所述第一衬底分离，并形成于所述第二衬底的第一区域上；\n\n[0011]将所述第一衬底与所述第二衬底的第二区域相对设置，利用第二激光使所述第二单体与所述第一衬底分离，并形成于所述第二衬底的第二区域上。\n\n[0012]在本申请的制作方法中，\n\n[0013]在第一衬底上形成一第一无机层，经第一次图案化处理形成多个无机单体的步骤包括：\n\n[0014]在第一衬底上形成一无机薄膜层；\n\n[0015]在所述无机薄膜层上涂覆第一光阻层；\n\n[0016]利用第一掩膜版对所述第一光阻层及无机薄膜层进行曝光、显影及蚀刻处理，使所述无机层薄膜形成多个呈阵列分布的无机单体；\n\n[0017]剥离所述第一光阻层；\n\n[0018]在本申请的制作方法中，所述第一无机薄膜层的材料包括硅。\n\n[0019]在本申请的制作方法中，\n\n[0020]在所述第一衬底上形成一发光层，经第二次图案化处理形成多个间隔设置的第一单体和第二单体的步骤包括：\n\n[0021]利用金属有机化合物化学气相沉淀在所述第一衬底上形成一LED发光薄膜层；\n\n[0022]在所述LED发光薄膜层上涂覆第二光阻层；\n\n[0023]利用第二掩膜版对所述第二光阻层及所述LED发光薄膜层进行曝光、显影及蚀刻处理，使所述LED发光薄膜层形成多个发光单体；\n\n[0024]剥离所述第二光阻层；\n\n[0025]其中，所述第一单体包括所述无机单体以及所述发光单体，所述第二单体包括所述发光单体。\n\n[0026]在本申请的制作方法中，相邻两个所述无机单体的间距为相邻两个所述发光单体的间距的二分之一。\n\n[0027]在本申请的制作方法中，\n\n[0028]所述第一激光的波长小于所述第二激光的波长。\n\n[0029]在本申请的制作方法中，\n\n[0030]位于所述第二衬底上相邻所述第一单体与所述第二单体的间距与位于所述第一衬底上的相邻两个所述无机单体的间距相等。\n\n[0031]在本申请的制作方法中，\n\n[0032]所述微型发光二极管的制作方法还包括：\n\n[0033]利用剥离工艺将位于所述发光单体上的所述无机单体剥离。\n\n[0034]在本申请的制作方法中，\n\n[0035]所述第一衬底及所述第二衬底的材料包括蓝宝石。\n\n[0036]本申请还提出了一种微型发光二极管，其中，所述微型发光二极管利用上述微型发光二极管的制作方法制备。\n\n[0037]有益效果：本申请提出了一种微型发光二极管及其制作方法，该制作方法包括在第一衬底上形成间隔设置的由LED发光单元构成的第一单体、及由无机单体与LED发光单体的组合单体，并通过无机单体与LED发光单体剧透不同的带隙宽度的原理从第一衬底转移至第二衬底上，完成该微型发光二极管的转移。本申请通过利用不同波长的镭射激光使得LED发光单体从第一衬底转移至第二衬底上，减小了工作量，提高了转移分散率。\n\n附图说明\n\n[0038]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0039]图1为本申请微型发光二极管制作方法的步骤图；\n\n[0040]图2A～图2E为本申请微型发光二极管制作方法的工艺流程图。\n\n具体实施方式\n\n[0041]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0042]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0043]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0044]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0045]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0046]请参阅图1，图1为本申请微型发光二极管制作方法的步骤图。\n\n[0047]请参阅图2A～图2E，图2A～图2E为本申请微型发光二极管制作方法的工艺流程图。\n\n[0048]所述微型发光二极管的制作方法包括：\n\n[0049]S10、在第一衬底10上形成一第一无机层，经第一次图案化处理形成多个无机单体201；\n\n[0050]请参阅图2A，步骤S10具体包括：\n\n[0051]S101、在第一衬底10上形成一无机薄膜层；\n\n[0052]所述第一衬底10为一圆晶衬底基板。\n\n[0053]在本实施例中，所述第一衬底10可以为蓝宝石衬底基板。\n\n[0054]利用沉积工艺在所述第一衬底10上沉积一无机薄膜层。\n\n[0055]在本实施例中，所述无机薄膜层的材料可以为单晶硅或者氮化硅等，本申请不作具体的限制。\n\n[0056]S102、在所述无机薄膜层上涂覆第一光阻层；\n\n[0057]S103、利用第一掩膜版对所述第一光阻层及无机薄膜层进行曝光、显影及蚀刻处理，使所述无机层薄膜形成多个呈阵列分布的无机单体201；\n\n[0058]S104、剥离所述第一光阻层。\n\n[0059]S20、在所述第一衬底10上形成一发光层，经第二次图案化处理形成多个间隔设置的第一单体20和第二单体30；\n\n[0060]请参阅图2B，步骤S20具体包括：\n\n[0061]S201、利用金属有机化合物化学气相沉淀在所述第一衬底10上形成一LED发光薄膜层；\n\n[0062]本步骤中发光层的材料可以为Mico-LED、Mini-LED等，本申请不作具体限制。\n\n[0063]S202、在所述LED发光薄膜层上涂覆第二光阻层；\n\n[0064]S203、利用第二掩膜版对所述第二光阻层及所述LED发光薄膜层进行曝光、显影及蚀刻处理，使所述LED发光薄膜层形成多个发光单体202；\n\n[0065]S204、剥离所述第二光阻层；\n\n[0066]由于所述无机单体201在本实施例中作为过渡层使用，因此所述无机单体201的厚度尽量小于所述发光单体202的厚度。但是具体厚度本申请没有限制。\n\n[0067]在本实施例中，所述第二掩膜版开口的密度大于所述第一掩膜版开口的密度。\n\n[0068]在本实施例中，所述第二掩膜版开口的大小与所述第一掩膜版开口的大小相等。\n\n[0069]因此本申请中发光单体202在所述第一衬底10上的正投影与所述无机单体201在所述第一衬底10上的正投影重合。\n\n[0070]在本实施例中，所述第一单体20包括所述无机单体201以及所述发光单体202，且所述发光单体202覆盖所述无机单体201。\n\n[0071]在本实施例中，所述第二单体30包括所述发光单体202。\n\n[0072]在本实施例中，所述第一单体20与所述第二单体30间隔设置。\n\n[0073]在本实施例中，相邻两个所述无机单体201的间距为相邻两个所述发光单体202的间距的二分之一。\n\n[0074]S30、将所述第一衬底10与所述第二衬底40的第一区域401相对设置，利用第一激光使所述第一单体20与所述第一衬底10分离，并形成于所述第二衬底40的第一区域401上401；\n\n[0075]请参阅图2C，步骤S30具体包括：\n\n[0076]S301、提供一第二衬底40，利用对位装置将所述第一衬底10与所述第二衬底40相对设置且进行对位；\n\n[0077]在本实施例中，所述第二衬底40的材料可以与所述第一衬底10的相同，所述第二衬底40的材料可以为蓝宝石衬底基板。\n\n[0078]在本实施例中，所述第一衬底10的面积小于所述第二衬底40的面积。所述对位装置将所述第一衬底10在所述所述第二衬底40上的正投影位于所述第二衬底40的第一区域401上。\n\n[0079]S302、利用第一激光照射所述无机单体201，使得所述无机单体201与所述第一衬底10分离，使得所述第一单体20落入所述所述第二衬底40的所述第一区域401上。\n\n[0080]S40、将所述第一衬底10与所述第二衬底40的第二区域402相对设置，利用第二激光使所述第二单体30与所述第一衬底10分离，并形成于所述第二衬底40的第二区域402上。\n\n[0081]请参阅图2D，步骤S40具体包括：\n\n[0082]S301、利用对位装置将所述第一衬底10与所述第二衬底40的第二区域402进行对位；\n\n[0083]S302、利用第二激光照射所述第一衬底10上的发光单体202，使得所述发光单体202与所述第一衬底10分离，使得所述发光单体202落入所述所述第二衬底40的所述第二区域402上。\n\n[0084]在步骤S30～S40中，由于蓝宝石衬底的带隙宽度大于发光单体202的带隙宽度，所述发光单体202的带隙宽度大于所述无机单体201的带隙宽度。因此根据对该三种材料照射不同能量的镭射激光，使之相互脱离。\n\n[0085]在本实施例中，所述第一激光的波长小于所述第二激光的波长。所述第一激光的能量小于所述第二激光的能量。\n\n[0086]当所述第一衬底10及以上的材料受到第一激光照射时，因所述无机单体201的带隙宽度最小，所述无机单体201受到第一激光照射后，与所述第一衬底10脱离，所述第一单体20落入所述第二衬底40的第一区域401内。\n\n[0087]当所述第一衬底10及以上的材料受到第二激光照射时，因所述发光单体202的带隙宽度小于所述蓝宝石衬底的带隙宽度，所述发光单体202受到第二激光照射后，与所述第一衬底10脱离，所述第二单体30落入所述第二衬底40的第二区域402内，完成所述发光单体202的转移。\n\n[0088]在本实施例中，位于所述第二衬底40上相邻所述第一单体20与所述第二单体30的间距与位于所述第一衬底10上的相邻两个所述无机单体201的间距相等。\n\n[0089]在本实施例中，所述第一区域401与第二区域402不相交。\n\n[0090]请参阅图2E，所述微型发光二极管的制作方法还包括：\n\n[0091]S50、利用剥离工艺将位于所述发光单体202上的所述无机单体201剥离。\n\n[0092]本步骤的剥离工艺为与步骤S30及S40相同的激光镭射工艺。通过利用第三波长的激光照射第二衬底40及以上的的第一单体20，所述无机受到第三激光照射后，与所述发光单体202脱离。\n\n[0093]然后进行所述微型发光二极管后续制程工艺，由于后续制程工艺为现有技术，本申请不再赘述。\n\n[0094]本申请还提出了一种微型发光二极管，其中，所述微型发光二极管利用上述微型发光二极管的制作方法制备。\n\n[0095]所述微型发光二极管的具体结构及原理与上述微型发光二极管的制备方法相同或相似，本申请不再赘述。\n\n[0096]本申请提出了一种微型发光二极管及其制作方法，该制作方法包括在第一衬底上形成间隔设置的由LED发光单元构成的第一单体、及由无机单体与LED发光单体的组合单体，并通过无机单体与LED发光单体剧透不同的带隙宽度的原理从第一衬底转移至第二衬底上，完成该微型发光二极管的转移。本申请通过利用不同波长的镭射激光使得LED发光单体从第一衬底转移至第二衬底上，减小了工作量，提高了转移分散率。\n\n[0097]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0098]以上对本申请实施例所提供的一种电子装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10812, 23866, '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种迷你发光二极管背光模组、其制作方法及显示装置。\n\n背景技术\n\n[0002]目前，发光二极管(Light Emitting Diode，LED)作为冷光源，具有环保节能的优点，已经被广泛应用于照明。同时，LED因其高亮度、寿命长、视角广等特点也被逐渐应用于显示面板领域，如LED屏广告牌等。特别地，迷你发光二极管(mini LED)在显示发光领域的应用已成为近期的研究热点，受到了各大面板厂商的关注，而在迷你发光二极管显示模组的生产过程中，固晶是其中非常核心的制程。\n\n[0003]其中，对于迷你发光二极管而言，一般采用锡膏作为固晶的焊料。先利用钢网印刷锡膏于基板上，然后将迷你发光二极管转移到锡膏区域，再经过回流焊将锡膏烧结，以完成迷你发光二极管固晶动作。由于锡膏需要在200～300摄氏度才能烧结，因此固晶制程必须进行高温回流焊，而进行高温回流焊就会造成能源的浪费。\n\n[0004]因此，如何在有效完成固晶制程的前提下避免采取高温回流焊而造成能源浪费是现有面板厂家正在努力攻克的难关。\n\n发明内容\n\n[0005]本申请提供一种迷你发光二极管背光模组、其制作方法及显示装置，可以解决现有的固晶制程因采取高温回流焊而造成能源浪费的技术问题。\n\n[0006]本申请提供一种迷你发光二极管的制作方法，所述背光模组包括基板，所述制作方法包括：\n\n[0007]提供一碳膏溶液；\n\n[0008]在基板上涂覆所述碳膏溶液，以在所述基板上形成碳膏阵列，所述碳膏阵列包括多个碳膏接触点；\n\n[0009]将多个迷你发光二极管转移至所述基板上，所述多个迷你发光二极管与所述多个碳膏接触点一一对应且接触；\n\n[0010]对所述基板进行低温退火处理。\n\n[0011]在本申请所提供的迷你发光二极管背光模组的制作方法中，所述提供一碳膏溶液的步骤，包括：\n\n[0012]将具有高导电性能的碳材料溶入到助焊剂中，形成第一混合溶液；\n\n[0013]往所述第一混合溶液中添加粘结剂，形成第二混合溶液；\n\n[0014]将所述第二混合溶液搅拌混合均匀，形成所述碳膏溶液。\n\n[0015]在本申请所提供的迷你发光二极管背光模组的制作方法中，所述在基板上涂覆所述碳膏溶液，以在所述基板上形成碳膏阵列，所述碳膏阵列包括多个碳膏接触点的步骤，包括：\n\n[0016]提供一掩膜板，并将所述掩膜板与所述基板进行对位处理；\n\n[0017]在所述掩膜板上以预设速率将所述碳膏溶液印刷在所述基板上；\n\n[0018]控制所述掩膜板与所述基板之间的间距以及刮刀的压力，以在所述基板上形成碳膏阵列，所述碳膏阵列包括多个碳膏接触点。\n\n[0019]在本申请所提供的迷你发光二极管背光模组的制作方法中，所述掩膜板与所述基板之间的间距介于0.5毫米-2毫米。\n\n[0020]在本申请所提供的迷你发光二极管背光模组的制作方法中，所述将多个迷你发光二极管转移至所述基板上，所述多个迷你发光二极管与所述多个碳膏接触点一一对应且接触的步骤，包括：\n\n[0021]通过转移机台拾取一个所述迷你发光二极管，并将所述迷你发光二极管转移至所述基板上，以使所述迷你发光二极管与一所述碳膏接触点对应且接触，直至所述多个迷你发光二极管均转移至所述基板上。\n\n[0022]在本申请所提供的迷你发光二极管背光模组的制作方法中，所述对所述基板进行低温退火处理的步骤，包括：\n\n[0023]将所述基板放置于加热台上；\n\n[0024]控制所述加热台的加热温度以及加热时间，直至除去所述碳膏溶液内的溶剂，完成固晶。\n\n[0025]在本申请所提供的迷你发光二极管背光模组的制作方法中，所述加热台的温度介于80度-180度之间。\n\n[0026]在本申请所提供的迷你发光二极管背光模组的制作方法中，所述加热时间介于10分钟-60分钟。\n\n[0027]本申请还提供一种迷你发光二极管背光模组的，包括：\n\n[0028]基板；\n\n[0029]碳膏阵列，所述碳膏阵列设置在所述基板上，且所述碳膏阵列包括多个碳膏接触点；\n\n[0030]迷你发光二极管，所述迷你发光二极管设置在所述碳膏阵列上，且所述迷你发光二极管与所述碳膏接触点一一对应且接触。\n\n[0031]本申请还提供一种显示装置，包括上述所述的迷你发光二极管背光模组以及设置在所述迷你发光二极管背光模组上的显示面板。\n\n[0032]在本申请提供的迷你发光二极管背光模组、其制作方法及显示装置中，采用高导电性的碳膏替代锡膏作为固晶原料，因碳膏具有良好的导热能力，因此不采用高温回流焊，采用低温烧结也可完成固晶制程，从而使固晶制程更加的简单节能，可以解决现有的固晶制程因采取高温回流焊而造成能源浪费的技术问题。\n\n附图说明\n\n[0033]为了更清楚地说明本申请中的技术方案，下面将对实施方式描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施方式，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0034]图1为本申请实施例提供的迷你发光二极管的固晶方法的流程示意图。\n\n[0035]图2为本申请实施例提供的迷你发光二极管背光模组的制作方法的第一子流程示意图。\n\n[0036]图3为本申请实施例提供的迷你发光二极管的制作方法的第二子流程示意图。\n\n[0037]图4为本申请实施例提供的迷你发光二极管的制作方法的第三子流程示意图。\n\n[0038]图5为本申请实施例提供的迷你发光二极管背光模组的结构示意图。\n\n[0039]图6为本申请实施例提供的显示装置的结构示意图。\n\n具体实施方式\n\n[0040]下面将结合本申请实施方式中的附图，对本申请中的技术方案进行清楚、完整地描述。显然，所描述的实施方式仅仅是本申请一部分实施方式，而不是全部的实施方式。基于本申请中的实施方式，本领域技术人员在没有做出创造性劳动前提下所获得的所有其他实施方式，都属于本申请保护的范围。\n\n[0041]请参阅图1，图1为本申请实施例提供的迷你发光二极管背光模组的制作方法的流程示意图。如图1所示，本申请实施例提供的迷你发光二极管背光模组的制作方法，包括以下步骤：101、提供一碳膏溶液；102、将所述碳膏溶液涂覆在基板上，以在所述基板上形成碳膏阵列，所述碳膏阵列包括多个碳膏接触点；103、将多个迷你发光二极管转移至所述基板上，所述多个迷你发光二极管与所述多个碳膏接触点一一对应且接触；104、对所述基板进行低温退火处理。\n\n[0042]可以理解的，在现有的固晶制程中，一般采用锡膏作为固晶的原料，由于锡膏需要在介于200摄氏度～300摄氏度之间的环境下才能够烧结，因此在采用锡膏作为固晶的原料时，需要采取高温回流焊制程。本申请通过碳膏代替锡膏作为固晶的焊料，碳膏具有和锡膏一样的高导电性，因此碳膏可以取代锡膏来作为固晶的原料，而且碳膏还具有高导热性，其散热能力优异，热辐射系数接近1，远远的高于锡膏，因此碳膏在低温环境下即可完成烧结固化，不需要高温回流焊制程。因此采用碳膏代替锡膏作为固晶的焊料可以节约能源，使固晶制程更加的简单节能且有效。\n\n[0043]其中，在一种实施方式中，步骤103具体包括：通过转移机台拾取一个所述迷你发光二极管，并将所述迷你发光二极管转移至所述基板上，以使所述迷你发光二极管与一所述碳膏接触点对应且接触，直至所述多个迷你发光二极管均转移至所述基板上。\n\n[0044]其中，可以理解的，通过转移机台转移迷你发光二极管时，由于转移机台的机械手一次只能拾取一个迷你发光二极管，因此需要一颗一颗的转移迷你发光二极管，而且一颗一颗的转移迷你发光二极管，也能够保证每个迷你发光二极管均与一碳膏接触点对应且接触，这样能够达到最好的固晶效果。\n\n[0045]具体地，请参阅图1、图2，图2为本申请实施例提供的迷你发光二极管背光模组的制作方法的第一子流程示意图。结合图1、图2所示，步骤101具体包括：1011、将具有高导电性能的碳材料溶入到助焊剂中，形成第一混合溶液；1012、往所述第一混合溶液中添加粘结剂，形成第二混合溶液；1013、将所述第二混合溶液搅拌混合均匀，形成所述碳膏溶液。\n\n[0046]其中，在一种实施方式中，高导电性能的碳材料包括石墨，石墨烯，碳纳米管，炭黑中的一种或几种的组合；助焊剂主要采用树脂型助焊剂，其中，所述树脂型助焊剂可为松香醇；粘结剂可以选用纤维素。\n\n[0047]其中，在一种实施方式中，高导电性能的碳材料的含量为10％～70％，助焊剂的含量为10％～50％，粘结剂的含量为2％～10％。\n\n[0048]其中，可以理解的，高导电性能的碳材料的含量决定着焊缝的大小，焊缝随着高导电性能的碳材料的含量百分比的增加而增大，但是随着高导电性能的碳材料的含量的增加，焊料的高导电性能的碳材料含量稍加改变，就会对焊点质量产生很大影响，因此一般采用60％～70％。助焊剂在焊接中主要起到辅助热传导、去除氧化物以及降低被焊接材质表面张力的作用。\n\n[0049]具体地，请参阅图1、图3，图3为本申请实施例提供的迷你发光二极管背光模组的制作方法的第二子流程示意图。结合图1、图3所示，步骤102具体包括：1021、提供一掩膜板，并将所述掩膜板与所述基板进行对位处理；1022、在所述掩膜板上以预设速率将所述碳膏溶液印刷在所述基板上；1023、控制所述掩膜板与所述基板之间的间距以及刮刀的压力，以在所述基板上形成碳膏阵列，所述碳膏阵列包括多个碳膏接触点。\n\n[0050]其中，可以理解的，掩膜板与基板之间的间距不能过大，如果掩膜板与基板之间的间距过大，从掩膜板流出的碳膏很难到达基板上；且掩膜板与基板之间的间距不能过小，如果掩膜板与基板之间的间距过小，浆料会在基板上流成一片，不能图案化。刮刀压力不能太大，如果刮刀压力太大，会使得到达基板上的碳膏在收刀时又部分重回到钢网上，刮刀压力不能太小，如果刮刀压力太小，则碳膏很难从钢网挤出来。因此，需要结合具体的需要，调整出掩膜板与基板之间合适的的间距以及刮刀合适的压力。\n\n[0051]其中，在一种实施方式中，掩膜板与基板之间的间距介于0.5毫米-2毫米。刮刀的压力需要满足能把碳膏从掩膜板的网孔中挤出。本申请实施例并不仅仅是调整掩膜板的参数，而是结合具体的需要，调整出与基板之间合适的间距以及合适的刮刀压力。\n\n[0052]其中，在一种实施方式中，在掩膜板上以预设速率将碳膏溶液印刷在基板上中，印刷的速率介于10毫米/秒～100毫米/秒之间，其中，一般选取30毫米/秒这一速率，因为采取这一速率能够使碳膏达到最好的印刷效果。\n\n[0053]具体地，请参阅图1、图4，图4为本申请实施例提供的迷你发光二极管背光模组的制作方法的第三子流程示意图。结合图1、图4所示，步骤104具体包括：1041、将所述基板放置于加热台上；1042、控制所述加热台的加热温度以及加热时间，直至除去所述碳膏溶液内的溶剂，完成固晶。\n\n[0054]其中，在一种实施方式中，加热台的温度介于80度-180度之间。加热时间介于10分钟-60分钟。\n\n[0055]其中，可以理解的，加热台加热的温度主要取决于碳膏中的溶剂的沸点，由于碳膏中的溶剂一般为松油醇，因此加热台的温度介于80度-180度之间，其中加热台的温度一般选择100摄氏度。另外，加热时间取决于碳膏中的溶剂以及加热台的温度，因为要保证完全除去碳膏内的溶剂，所以加热台的温度温度越高，去除的时间越短，但是加热台的温度越高，能源的消耗就越大。因此，加热台的加热时间介于10分钟-60分钟，其中，加热台的加热时间一般采取30分钟。本申请实施例并不仅仅是调整加热台的参数，而是结合具体的需要，调整出合适的加热温度和加热时间。\n\n[0056]其中，可以理解的，单单只是调整单一的参数是本领域技术人员可以做到的，但是，本申请实施例在实际操作过程中，由于加热时间和加热温度相互影响，在保证最佳加热温度的同时，又无法保证最佳加热时间；同样在保证最佳加热时间的同时，又无法保证最佳加热温度。因此，本申请实施例通过综合考虑碳膏的溶剂沸点以及能源消耗，从而调试出最佳的加热温度和最佳的加热时间。本申请实施例选择100摄氏度作为最佳的加热温度，选择30分钟作为最佳的加热时间。这样能保证在有效完成固晶制程的前提最大限度地节省能源的消耗。\n\n[0057]在本申请提供的迷你发光二极管背光模组的制作方法中，采用高导电性的碳膏替代锡膏作为固晶原料，因碳膏具有良好的导热能力，因此不采用高温回流焊，采用低温烧结也可完成固晶制程，从而使固晶制程更加的简单节能，可以解决现有的固晶制程因采取高温回流焊而造成能源浪费的技术问题。\n\n[0058]参阅图5，图5为本申请实施例提供的迷你发光二极管背光模组的结构示意图。如图5所示，本申请实施例提供的迷你发光二极管背光模组包括基板201、碳膏阵列202以及迷你发光二极管203。\n\n[0059]所述碳膏阵列202设置在所述基板201上，且所述碳膏阵列202包括多个碳膏接触点2021，所述迷你发光二极管203设置在所述碳膏阵列202上，且所述迷你发光二极管203与所述碳膏接触点2021一一对应且接触。\n\n[0060]其中，可以理解，碳膏阵列202中碳膏以矩阵方式分布，碳膏以矩阵方式分布，不仅可以防止碳膏之间互相影响，而且还方便发光二极管转移至碳膏上，从而达到提高固晶效果的目的。\n\n[0061]在本申请提供的迷你发光二极管背光模组中，采用高导电性的碳膏替代锡膏作为固晶原料，因碳膏具有良好的导热能力，因此不采用高温回流焊，采用低温烧结也可完成固晶制程，从而使固晶制程更加的简单节能，可以解决现有的迷你发光二极管背光模组在固定制程中因采取高温回流焊而造成能源浪费的技术问题。\n\n[0062]参阅图6，图6为本申请实施例提供的显示装置的结构示意图。如图6所示，本申请实施例提供的显示装置包括迷你发光二极管背光模组301以及显示面板302。其中，显示面板302设置在迷你发光二极管背光模组301上。\n\n[0063]在本申请提供的显示装置中，采用高导电性的碳膏替代锡膏作为固晶原料，因碳膏具有良好的导热能力，因此不采用高温回流焊，采用低温烧结也可完成固晶制程，从而使固晶制程更加的简单节能，可以解决现有的显示装置在固定制程中因采取高温回流焊而造成能源浪费的技术问题。\n\n[0064]以上对本申请实施方式提供了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施方式的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种迷你发光二极管背光模组、其制作方法及显示装置。\n\n背景技术\n\n[0002]目前，发光二极管(Light Emitting Diode，LED)作为冷光源，具有环保节能的优点，已经被广泛应用于照明。同时，LED因其高亮度、寿命长、视角广等特点也被逐渐应用于显示面板领域，如LED屏广告牌等。特别地，迷你发光二极管(mini LED)在显示发光领域的应用已成为近期的研究热点，受到了各大面板厂商的关注，而在迷你发光二极管显示模组的生产过程中，固晶是其中非常核心的制程。\n\n[0003]其中，对于迷你发光二极管而言，一般采用锡膏作为固晶的焊料。先利用钢网印刷锡膏于基板上，然后将迷你发光二极管转移到锡膏区域，再经过回流焊将锡膏烧结，以完成迷你发光二极管固晶动作。由于锡膏需要在200～300摄氏度才能烧结，因此固晶制程必须进行高温回流焊，而进行高温回流焊就会造成能源的浪费。\n\n[0004]因此，如何在有效完成固晶制程的前提下避免采取高温回流焊而造成能源浪费是现有面板厂家正在努力攻克的难关。\n\n发明内容\n\n[0005]本申请提供一种迷你发光二极管背光模组、其制作方法及显示装置，可以解决现有的固晶制程因采取高温回流焊而造成能源浪费的技术问题。\n\n[0006]本申请提供一种迷你发光二极管的制作方法，所述背光模组包括基板，所述制作方法包括：\n\n[0007]提供一碳膏溶液；\n\n[0008]在基板上涂覆所述碳膏溶液，以在所述基板上形成碳膏阵列，所述碳膏阵列包括多个碳膏接触点；\n\n[0009]将多个迷你发光二极管转移至所述基板上，所述多个迷你发光二极管与所述多个碳膏接触点一一对应且接触；\n\n[0010]对所述基板进行低温退火处理。\n\n[0011]在本申请所提供的迷你发光二极管背光模组的制作方法中，所述提供一碳膏溶液的步骤，包括：\n\n[0012]将具有高导电性能的碳材料溶入到助焊剂中，形成第一混合溶液；\n\n[0013]往所述第一混合溶液中添加粘结剂，形成第二混合溶液；\n\n[0014]将所述第二混合溶液搅拌混合均匀，形成所述碳膏溶液。\n\n[0015]在本申请所提供的迷你发光二极管背光模组的制作方法中，所述在基板上涂覆所述碳膏溶液，以在所述基板上形成碳膏阵列，所述碳膏阵列包括多个碳膏接触点的步骤，包括：\n\n[0016]提供一掩膜板，并将所述掩膜板与所述基板进行对位处理；\n\n[0017]在所述掩膜板上以预设速率将所述碳膏溶液印刷在所述基板上；\n\n[0018]控制所述掩膜板与所述基板之间的间距以及刮刀的压力，以在所述基板上形成碳膏阵列，所述碳膏阵列包括多个碳膏接触点。\n\n[0019]在本申请所提供的迷你发光二极管背光模组的制作方法中，所述掩膜板与所述基板之间的间距介于0.5毫米-2毫米。\n\n[0020]在本申请所提供的迷你发光二极管背光模组的制作方法中，所述将多个迷你发光二极管转移至所述基板上，所述多个迷你发光二极管与所述多个碳膏接触点一一对应且接触的步骤，包括：\n\n[0021]通过转移机台拾取一个所述迷你发光二极管，并将所述迷你发光二极管转移至所述基板上，以使所述迷你发光二极管与一所述碳膏接触点对应且接触，直至所述多个迷你发光二极管均转移至所述基板上。\n\n[0022]在本申请所提供的迷你发光二极管背光模组的制作方法中，所述对所述基板进行低温退火处理的步骤，包括：\n\n[0023]将所述基板放置于加热台上；\n\n[0024]控制所述加热台的加热温度以及加热时间，直至除去所述碳膏溶液内的溶剂，完成固晶。\n\n[0025]在本申请所提供的迷你发光二极管背光模组的制作方法中，所述加热台的温度介于80度-180度之间。\n\n[0026]在本申请所提供的迷你发光二极管背光模组的制作方法中，所述加热时间介于10分钟-60分钟。\n\n[0027]本申请还提供一种迷你发光二极管背光模组的，包括：\n\n[0028]基板；\n\n[0029]碳膏阵列，所述碳膏阵列设置在所述基板上，且所述碳膏阵列包括多个碳膏接触点；\n\n[0030]迷你发光二极管，所述迷你发光二极管设置在所述碳膏阵列上，且所述迷你发光二极管与所述碳膏接触点一一对应且接触。\n\n[0031]本申请还提供一种显示装置，包括上述所述的迷你发光二极管背光模组以及设置在所述迷你发光二极管背光模组上的显示面板。\n\n[0032]在本申请提供的迷你发光二极管背光模组、其制作方法及显示装置中，采用高导电性的碳膏替代锡膏作为固晶原料，因碳膏具有良好的导热能力，因此不采用高温回流焊，采用低温烧结也可完成固晶制程，从而使固晶制程更加的简单节能，可以解决现有的固晶制程因采取高温回流焊而造成能源浪费的技术问题。\n\n附图说明\n\n[0033]为了更清楚地说明本申请中的技术方案，下面将对实施方式描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施方式，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0034]图1为本申请实施例提供的迷你发光二极管的固晶方法的流程示意图。\n\n[0035]图2为本申请实施例提供的迷你发光二极管背光模组的制作方法的第一子流程示意图。\n\n[0036]图3为本申请实施例提供的迷你发光二极管的制作方法的第二子流程示意图。\n\n[0037]图4为本申请实施例提供的迷你发光二极管的制作方法的第三子流程示意图。\n\n[0038]图5为本申请实施例提供的迷你发光二极管背光模组的结构示意图。\n\n[0039]图6为本申请实施例提供的显示装置的结构示意图。\n\n具体实施方式\n\n[0040]下面将结合本申请实施方式中的附图，对本申请中的技术方案进行清楚、完整地描述。显然，所描述的实施方式仅仅是本申请一部分实施方式，而不是全部的实施方式。基于本申请中的实施方式，本领域技术人员在没有做出创造性劳动前提下所获得的所有其他实施方式，都属于本申请保护的范围。\n\n[0041]请参阅图1，图1为本申请实施例提供的迷你发光二极管背光模组的制作方法的流程示意图。如图1所示，本申请实施例提供的迷你发光二极管背光模组的制作方法，包括以下步骤：101、提供一碳膏溶液；102、将所述碳膏溶液涂覆在基板上，以在所述基板上形成碳膏阵列，所述碳膏阵列包括多个碳膏接触点；103、将多个迷你发光二极管转移至所述基板上，所述多个迷你发光二极管与所述多个碳膏接触点一一对应且接触；104、对所述基板进行低温退火处理。\n\n[0042]可以理解的，在现有的固晶制程中，一般采用锡膏作为固晶的原料，由于锡膏需要在介于200摄氏度～300摄氏度之间的环境下才能够烧结，因此在采用锡膏作为固晶的原料时，需要采取高温回流焊制程。本申请通过碳膏代替锡膏作为固晶的焊料，碳膏具有和锡膏一样的高导电性，因此碳膏可以取代锡膏来作为固晶的原料，而且碳膏还具有高导热性，其散热能力优异，热辐射系数接近1，远远的高于锡膏，因此碳膏在低温环境下即可完成烧结固化，不需要高温回流焊制程。因此采用碳膏代替锡膏作为固晶的焊料可以节约能源，使固晶制程更加的简单节能且有效。\n\n[0043]其中，在一种实施方式中，步骤103具体包括：通过转移机台拾取一个所述迷你发光二极管，并将所述迷你发光二极管转移至所述基板上，以使所述迷你发光二极管与一所述碳膏接触点对应且接触，直至所述多个迷你发光二极管均转移至所述基板上。\n\n[0044]其中，可以理解的，通过转移机台转移迷你发光二极管时，由于转移机台的机械手一次只能拾取一个迷你发光二极管，因此需要一颗一颗的转移迷你发光二极管，而且一颗一颗的转移迷你发光二极管，也能够保证每个迷你发光二极管均与一碳膏接触点对应且接触，这样能够达到最好的固晶效果。\n\n[0045]具体地，请参阅图1、图2，图2为本申请实施例提供的迷你发光二极管背光模组的制作方法的第一子流程示意图。结合图1、图2所示，步骤101具体包括：1011、将具有高导电性能的碳材料溶入到助焊剂中，形成第一混合溶液；1012、往所述第一混合溶液中添加粘结剂，形成第二混合溶液；1013、将所述第二混合溶液搅拌混合均匀，形成所述碳膏溶液。\n\n[0046]其中，在一种实施方式中，高导电性能的碳材料包括石墨，石墨烯，碳纳米管，炭黑中的一种或几种的组合；助焊剂主要采用树脂型助焊剂，其中，所述树脂型助焊剂可为松香醇；粘结剂可以选用纤维素。\n\n[0047]其中，在一种实施方式中，高导电性能的碳材料的含量为10％～70％，助焊剂的含量为10％～50％，粘结剂的含量为2％～10％。\n\n[0048]其中，可以理解的，高导电性能的碳材料的含量决定着焊缝的大小，焊缝随着高导电性能的碳材料的含量百分比的增加而增大，但是随着高导电性能的碳材料的含量的增加，焊料的高导电性能的碳材料含量稍加改变，就会对焊点质量产生很大影响，因此一般采用60％～70％。助焊剂在焊接中主要起到辅助热传导、去除氧化物以及降低被焊接材质表面张力的作用。\n\n[0049]具体地，请参阅图1、图3，图3为本申请实施例提供的迷你发光二极管背光模组的制作方法的第二子流程示意图。结合图1、图3所示，步骤102具体包括：1021、提供一掩膜板，并将所述掩膜板与所述基板进行对位处理；1022、在所述掩膜板上以预设速率将所述碳膏溶液印刷在所述基板上；1023、控制所述掩膜板与所述基板之间的间距以及刮刀的压力，以在所述基板上形成碳膏阵列，所述碳膏阵列包括多个碳膏接触点。\n\n[0050]其中，可以理解的，掩膜板与基板之间的间距不能过大，如果掩膜板与基板之间的间距过大，从掩膜板流出的碳膏很难到达基板上；且掩膜板与基板之间的间距不能过小，如果掩膜板与基板之间的间距过小，浆料会在基板上流成一片，不能图案化。刮刀压力不能太大，如果刮刀压力太大，会使得到达基板上的碳膏在收刀时又部分重回到钢网上，刮刀压力不能太小，如果刮刀压力太小，则碳膏很难从钢网挤出来。因此，需要结合具体的需要，调整出掩膜板与基板之间合适的的间距以及刮刀合适的压力。\n\n[0051]其中，在一种实施方式中，掩膜板与基板之间的间距介于0.5毫米-2毫米。刮刀的压力需要满足能把碳膏从掩膜板的网孔中挤出。本申请实施例并不仅仅是调整掩膜板的参数，而是结合具体的需要，调整出与基板之间合适的间距以及合适的刮刀压力。\n\n[0052]其中，在一种实施方式中，在掩膜板上以预设速率将碳膏溶液印刷在基板上中，印刷的速率介于10毫米/秒～100毫米/秒之间，其中，一般选取30毫米/秒这一速率，因为采取这一速率能够使碳膏达到最好的印刷效果。\n\n[0053]具体地，请参阅图1、图4，图4为本申请实施例提供的迷你发光二极管背光模组的制作方法的第三子流程示意图。结合图1、图4所示，步骤104具体包括：1041、将所述基板放置于加热台上；1042、控制所述加热台的加热温度以及加热时间，直至除去所述碳膏溶液内的溶剂，完成固晶。\n\n[0054]其中，在一种实施方式中，加热台的温度介于80度-180度之间。加热时间介于10分钟-60分钟。\n\n[0055]其中，可以理解的，加热台加热的温度主要取决于碳膏中的溶剂的沸点，由于碳膏中的溶剂一般为松油醇，因此加热台的温度介于80度-180度之间，其中加热台的温度一般选择100摄氏度。另外，加热时间取决于碳膏中的溶剂以及加热台的温度，因为要保证完全除去碳膏内的溶剂，所以加热台的温度温度越高，去除的时间越短，但是加热台的温度越高，能源的消耗就越大。因此，加热台的加热时间介于10分钟-60分钟，其中，加热台的加热时间一般采取30分钟。本申请实施例并不仅仅是调整加热台的参数，而是结合具体的需要，调整出合适的加热温度和加热时间。\n\n[0056]其中，可以理解的，单单只是调整单一的参数是本领域技术人员可以做到的，但是，本申请实施例在实际操作过程中，由于加热时间和加热温度相互影响，在保证最佳加热温度的同时，又无法保证最佳加热时间；同样在保证最佳加热时间的同时，又无法保证最佳加热温度。因此，本申请实施例通过综合考虑碳膏的溶剂沸点以及能源消耗，从而调试出最佳的加热温度和最佳的加热时间。本申请实施例选择100摄氏度作为最佳的加热温度，选择30分钟作为最佳的加热时间。这样能保证在有效完成固晶制程的前提最大限度地节省能源的消耗。\n\n[0057]在本申请提供的迷你发光二极管背光模组的制作方法中，采用高导电性的碳膏替代锡膏作为固晶原料，因碳膏具有良好的导热能力，因此不采用高温回流焊，采用低温烧结也可完成固晶制程，从而使固晶制程更加的简单节能，可以解决现有的固晶制程因采取高温回流焊而造成能源浪费的技术问题。\n\n[0058]参阅图5，图5为本申请实施例提供的迷你发光二极管背光模组的结构示意图。如图5所示，本申请实施例提供的迷你发光二极管背光模组包括基板201、碳膏阵列202以及迷你发光二极管203。\n\n[0059]所述碳膏阵列202设置在所述基板201上，且所述碳膏阵列202包括多个碳膏接触点2021，所述迷你发光二极管203设置在所述碳膏阵列202上，且所述迷你发光二极管203与所述碳膏接触点2021一一对应且接触。\n\n[0060]其中，可以理解，碳膏阵列202中碳膏以矩阵方式分布，碳膏以矩阵方式分布，不仅可以防止碳膏之间互相影响，而且还方便发光二极管转移至碳膏上，从而达到提高固晶效果的目的。\n\n[0061]在本申请提供的迷你发光二极管背光模组中，采用高导电性的碳膏替代锡膏作为固晶原料，因碳膏具有良好的导热能力，因此不采用高温回流焊，采用低温烧结也可完成固晶制程，从而使固晶制程更加的简单节能，可以解决现有的迷你发光二极管背光模组在固定制程中因采取高温回流焊而造成能源浪费的技术问题。\n\n[0062]参阅图6，图6为本申请实施例提供的显示装置的结构示意图。如图6所示，本申请实施例提供的显示装置包括迷你发光二极管背光模组301以及显示面板302。其中，显示面板302设置在迷你发光二极管背光模组301上。\n\n[0063]在本申请提供的显示装置中，采用高导电性的碳膏替代锡膏作为固晶原料，因碳膏具有良好的导热能力，因此不采用高温回流焊，采用低温烧结也可完成固晶制程，从而使固晶制程更加的简单节能，可以解决现有的显示装置在固定制程中因采取高温回流焊而造成能源浪费的技术问题。\n\n[0064]以上对本申请实施方式提供了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施方式的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10813, 23867, '技术领域\n\n[0001]本申请涉及显示领域，特别涉及一种微型发光二极管及其制作方法。\n\n背景技术\n\n[0002]微发光二极管(Micro LED)技术是指在衬底上以高密度集成的微小尺寸的LED阵列。作为新兴显示技术，微发光二极管显示相较于LCD、OLED显示有较多优势，如较低的功耗，较高的色域，较快的相应速率等，但其技术难度大于LCD或OLED。\n\n[0003]在制造微发光二极管的过程中，LED芯片绑定在显示基板的驱动电路上，通过将锡膏加热变成熔融的锡点绑定。在锡点的绑定过程中，熔融的锡点很容易偏移或扩散，导致电路或LED芯片污染，造成短路，形成亮暗点。\n\n[0004]本发明基于此技术问题，提出了下列技术方案。\n\n发明内容\n\n[0005]本申请提供一种微型发光二极管及其制作方法，以解决现有微型发光二极管转移分散效率低的技术问题。\n\n[0006]为解决上述问题，本申请提供的技术方案如下：\n\n[0007]本申请提供一种微型发光二极管的制作方法，其包括：\n\n[0008]在设置有多个驱动电路板的衬底上形成一导电薄膜层；\n\n[0009]对所述导电薄膜层进行图案化处理，使所述导电薄膜层形成多个导电单体；\n\n[0010]在所述导电单体上形成至少一发光单体；\n\n[0011]利用第一温度使所述导电单体呈熔融状态，使所述发光单体与所述驱动电路板电连接。\n\n[0012]在本申请的制作方法中，在设置有多个驱动电路板的衬底上形成一导电薄膜层的步骤包括：\n\n[0013]在所述衬底上形成至少一驱动电路板，所述驱动电路板包括远离所述衬底一侧的至少一端子；\n\n[0014]在所述衬底上沉积一所述导电薄膜层，使所述导电薄膜层覆盖所述驱动电路板及所述衬底。\n\n[0015]在本申请的制作方法中，\n\n[0016]在沉积一导电薄膜层之前，还包括：\n\n[0017]在所述驱动电路板表面设置一隔热层，所述隔热层包括与所述端子一一对应的第一开口。\n\n[0018]在本申请的制作方法中，\n\n[0019]所述隔热层的厚度小于所述端子的厚度。\n\n[0020]在本申请的制作方法中，\n\n[0021]对所述导电薄膜层进行图案化处理，使所述导电薄膜层形成多个导电单体的步骤包括：\n\n[0022]在所述导电薄膜层上涂覆第一光阻层；\n\n[0023]利用掩膜版对所述第一光阻层及导电薄膜层进行曝光、显影及蚀刻处理，使所述导电薄膜层形成多个导电单体；\n\n[0024]剥离所述第一光阻层。\n\n[0025]在本申请的制作方法中，\n\n[0026]所述导电单体位于所述驱动电路板上，一所述导电单体对应且覆盖一所述端子。\n\n[0027]在本申请的制作方法中，\n\n[0028]所述导电薄膜层的厚度为0.5～3微米。\n\n[0029]在本申请的制作方法中，所述导电薄膜层的的材料包括锡。\n\n[0030]在本申请的制作方法中，\n\n[0031]利用第一温度使所述导电单体呈熔融状态的步骤包括：\n\n[0032]将形成有发光单体的所述衬底设置于预定加热装置中；\n\n[0033]利用第一温度使所述导电单体呈熔融状态，使得所述发光单体与所述驱动电路板中的至少一端子电连接；\n\n[0034]其中，所述第一温度大于232℃。\n\n[0035]本申请还提出了一种微型发光二极管，其包括衬底、位于所述衬底上的驱动电路板、位于所述驱动电路板上的导电单体及位于所述导电单体上的发光单体；以及\n\n[0036]位于所述驱动电路板上的隔热层，所述隔热层包括与所述端子一一对应的第一开口。\n\n[0037]有益效果：本申请通过在驱动电路板的端子上设置锡金属单体对端子区域进行定位，当锡金属与LED发光单体完成对位后，通过锡金属的低熔点性能，并利用预定温度使锡金属单体熔融，使得LED发光单体与端子电连接，完成LED发光单体与驱动电路板的对位，使得锡点的位置固定，不易扩散或偏移，消除暗点。\n\n附图说明\n\n[0038]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0039]图1为本申请微型发光二极管制作方法的步骤图；\n\n[0040]图2A～图2F为本申请微型发光二极管制作方法的工艺流程图；\n\n[0041]图3为本申请微型发光二极管的结构图。\n\n具体实施方式\n\n[0042]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0043]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0044]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0045]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0046]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0047]请参阅图1，图1为本申请微型发光二极管制作方法的步骤图。\n\n[0048]请参阅图2A～图2F，图2A～图2F为本申请微型发光二极管制作方法的工艺流程图。\n\n[0049]所述微型发光二极管100的制作方法包括：\n\n[0050]S10、在设置有多个驱动电路板20的衬底10上形成一导电薄膜层30；\n\n[0051]请参阅图2A，步骤S10具体包括：\n\n[0052]S101、在所述衬底10上形成多个驱动电路板20；\n\n[0053]所述衬底10为一圆晶衬底10基板。\n\n[0054]在本实施例中，所述衬底10可以为蓝宝石衬底10基板，本申请没有具体的限制。\n\n[0055]所述驱动电路板20可以直接在所述衬底10上进行制作，或者将制作好的驱动电路板20通过预定工艺固定在所述衬底10上，本申请不作具体限制。\n\n[0056]所述驱动电路板20包括驱动电路层201及位于所述驱动电路层201上的至少一端子202。所述端子202位于所述驱动电路层201远离所述衬底10一侧。\n\n[0057]S102、在所述衬底10上沉积一所述导电薄膜层30；\n\n[0058]请参阅图2B，本步骤通过原子溅射等工艺在所述衬底10上沉积一导电薄膜层30，所述导电薄膜层30覆盖所述驱动电路板20及所述衬底10。\n\n[0059]在本实施例中，所述导电薄膜层30的材料为低熔点的金属。\n\n[0060]在本实施例中，所述导电薄膜层30的材料可以为锡，熔点为231.89℃。\n\n[0061]在本实施例中，所述导电薄膜层30的厚度为0.5～3微米。\n\n[0062]请参阅图2C，在步骤S102之前，该制作方法还可以包括：\n\n[0063]在所述驱动电路板20表面设置一隔热层40。\n\n[0064]由于本申请通过锡金属的低熔点性能将锡点进行固定，因此在后期需要进行将驱动电路板20加入高温环境进行加热。而金属锡的熔点为231.89℃，而驱动电路板20内存在一些不耐高温材料，避免因高温而导致所述驱动电路板20的失效。\n\n[0065]所述隔热层40还包括至少一第一开口401。所述第一开口401与所述端子202一一对应。\n\n[0066]在本实施例中，所述隔热层40的厚度可以小于所述端子202的厚度。当后面制程中锡金属单体熔融时，可以向端子202两侧均匀扩散，使得所述端子202可以通过金属锡与对应发光单体50电连接。\n\n[0067]在本实施例中，所述第一开口401的面积大于所述端子202在所述驱动电路板20上投影面的面积。\n\n[0068]在本实施例中，所述隔热层40还可以将所述驱动电路板20完全覆盖，进一步避免所述驱动电路板20的失效。\n\n[0069]S20、对所述导电薄膜层30进行图案化处理，使所述导电薄膜层30形成多个导电单体301；\n\n[0070]请参阅图2D，步骤S20具体包括：\n\n[0071]S201、在所述导电薄膜层30上涂覆第一光阻层；\n\n[0072]在本实施例中，所述第一光阻层的材料可以为显性光刻胶或者隐形光刻胶，本申请以显性光刻胶为例进行说明。\n\n[0073]S202、利用掩膜版对所述第一光阻层及导电薄膜层30进行曝光、显影及蚀刻处理，使所述导电薄膜层30形成多个导电单体301；\n\n[0074]S203、剥离所述第一光阻层。\n\n[0075]在本实施例中，所述掩摸版包括多个开口，每一开口对应一所述导电单体301。该开口的面积与所述导电单体301在所述衬底10上的正投影面的面积相等。\n\n[0076]在本实施例中，所述导电单体301位于所述驱动电路板20上，一所述导电单体301对应且覆盖一所述端子202。\n\n[0077]S30、在所述导电单体301上形成至少一发光单体50；\n\n[0078]请参阅图2E，所述发光单体50可以为Mico-LED、Mini-LED等，本申请不作具体限制。\n\n[0079]在本实施例中，所述发光单体50的表面同样可以设置一隔热层40，以避免所述发光单体50因高温环境而失效。\n\n[0080]在本实施例中，一发光单体50对应两个所述导电单体301。\n\n[0081]S40、利用第一温度使所述导电单体301呈熔融状态，使所述发光单体50与所述驱动电路板20电连接。\n\n[0082]请参阅图2F，步骤S40具体包括：\n\n[0083]S401、将形成有发光单体50的所述衬底10设置于预定加热装置中；\n\n[0084]S402、利用第一温度使所述导电单体301呈熔融状态，使得所述发光单体50与所述驱动电路板20中的至少一端子202电连接；\n\n[0085]在本步骤中，可以通过预定加热装置对所述导电单体301进行定向加热。由于导电单体301上存在发光单体50，因此需要对所述发光单体50对应的所述导电单体301同时进行加热，防止所述导电单体301倾斜。\n\n[0086]在本实施例中，还可以对整个装置同时进行加热，此时需要保证驱动电路板20及发光单体50的隔热性能。\n\n[0087]在本实施例中，所述第一温度可以大于或等于232℃。由于金属锡的熔点为231.89℃，因此温度的设置需要在保证金属锡融化。另外，在避免驱动电路板20及发光单体50失效的前提下，加热温度过高，具体温度值可以根据实际产品进行设置。\n\n[0088]然后进行所述微型发光二极管100后续制程工艺，由于后续制程工艺为现有技术，本申请不再赘述。\n\n[0089]请参阅图3，图3为本申请微型发光二极管的结构图。\n\n[0090]所述微型发光二极管100包括衬底10、位于所述衬底10上的驱动电路板20、位于所述驱动电路板20上的导电单体301及位于所述导电单体301上的发光单体50。\n\n[0091]在本实施例中，所述衬底10可以为蓝宝石衬底10基板，本申请没有具体的限制。\n\n[0092]所述驱动电路板20可以直接在所述衬底10上进行制作，或者将制作好的驱动电路板20通过预定工艺固定在所述衬底10上，本申请不作具体限制。\n\n[0093]所述驱动电路板20包括驱动电路层201及位于所述驱动电路层201上的至少一端子202。所述端子202位于所述驱动电路层201远离所述衬底10一侧。\n\n[0094]所述导电单体301由一导电薄膜层30经图案化制成。所述导电单体301覆盖所述驱动电路板20上的端子202。\n\n[0095]在本实施例中，所述导电单体301的材料为低熔点的金属。\n\n[0096]在本实施例中，所述导电单体301的材料可以为锡，熔点为231.89℃。\n\n[0097]所述发光单体50通过所述导电单体301与所述驱动电路板20电连接。所述发光单体50可以为Mico-LED、Mini-LED等，本申请不作具体限制。\n\n[0098]请参阅图3，所述微型发光二极管100还包括位于所述驱动电路板20上的隔热层40。\n\n[0099]由于本申请通过微型发光二极管100通过将金属锡熔融以固定所述金属锡的位置以及发光单体50的位置。而加热装置对金属进行加热时，所述驱动电路板20还将收到高温的影响，而驱动电路板20内存在一些不耐高温材料，所述隔热层40的存在避免了因高温而导致所述驱动电路板20的失效。\n\n[0100]请参阅图2C，所述隔热层40还包括至少一第一开口401。所述第一开口401与所述端子202一一对应。\n\n[0101]在本实施例中，所述隔热层40的厚度可以小于所述端子202的厚度。当锡金属熔融时，可以向端子202两侧均匀扩散，使得所述端子202可以通过金属锡与对应发光单体50电连接。\n\n[0102]在本实施例中，所述第一开口401的面积大于所述端子202在所述驱动电路板20上投影面的面积。\n\n[0103]在本实施例中，所述隔热层40还可以将所述驱动电路板20完全覆盖，进一步避免所述驱动电路板20的失效。\n\n[0104]所述微型发光二极管的具体结构及原理与上述微型发光二极管的制备方法相同或相似，本申请不再赘述。\n\n[0105]本申请提出了一种微型发光二极管及其制作方法，该制作方法包括在设置有多个驱动电路板的衬底上形成多个导电单体；在该导电单体上形成至少一发光单体；利用第一温度使该导电单体呈熔融状态，使该发光单体与该驱动电路板电连接。本申请通过在驱动电路板的端子上设置锡金属单体对端子区域进行定位，当锡金属与LED发光单体完成对位后，通过锡金属的低熔点性能，并利用预定温度使锡金属单体熔融，使得LED发光单体与端子电连接，完成LED发光单体与驱动电路板的对位，使得锡点的位置固定，不易扩散或偏移，消除暗点。\n\n[0106]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0107]以上对本申请实施例所提供的一种电子装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示领域，特别涉及一种微型发光二极管及其制作方法。\n\n背景技术\n\n[0002]微发光二极管(Micro LED)技术是指在衬底上以高密度集成的微小尺寸的LED阵列。作为新兴显示技术，微发光二极管显示相较于LCD、OLED显示有较多优势，如较低的功耗，较高的色域，较快的相应速率等，但其技术难度大于LCD或OLED。\n\n[0003]在制造微发光二极管的过程中，LED芯片绑定在显示基板的驱动电路上，通过将锡膏加热变成熔融的锡点绑定。在锡点的绑定过程中，熔融的锡点很容易偏移或扩散，导致电路或LED芯片污染，造成短路，形成亮暗点。\n\n[0004]本发明基于此技术问题，提出了下列技术方案。\n\n发明内容\n\n[0005]本申请提供一种微型发光二极管及其制作方法，以解决现有微型发光二极管转移分散效率低的技术问题。\n\n[0006]为解决上述问题，本申请提供的技术方案如下：\n\n[0007]本申请提供一种微型发光二极管的制作方法，其包括：\n\n[0008]在设置有多个驱动电路板的衬底上形成一导电薄膜层；\n\n[0009]对所述导电薄膜层进行图案化处理，使所述导电薄膜层形成多个导电单体；\n\n[0010]在所述导电单体上形成至少一发光单体；\n\n[0011]利用第一温度使所述导电单体呈熔融状态，使所述发光单体与所述驱动电路板电连接。\n\n[0012]在本申请的制作方法中，在设置有多个驱动电路板的衬底上形成一导电薄膜层的步骤包括：\n\n[0013]在所述衬底上形成至少一驱动电路板，所述驱动电路板包括远离所述衬底一侧的至少一端子；\n\n[0014]在所述衬底上沉积一所述导电薄膜层，使所述导电薄膜层覆盖所述驱动电路板及所述衬底。\n\n[0015]在本申请的制作方法中，\n\n[0016]在沉积一导电薄膜层之前，还包括：\n\n[0017]在所述驱动电路板表面设置一隔热层，所述隔热层包括与所述端子一一对应的第一开口。\n\n[0018]在本申请的制作方法中，\n\n[0019]所述隔热层的厚度小于所述端子的厚度。\n\n[0020]在本申请的制作方法中，\n\n[0021]对所述导电薄膜层进行图案化处理，使所述导电薄膜层形成多个导电单体的步骤包括：\n\n[0022]在所述导电薄膜层上涂覆第一光阻层；\n\n[0023]利用掩膜版对所述第一光阻层及导电薄膜层进行曝光、显影及蚀刻处理，使所述导电薄膜层形成多个导电单体；\n\n[0024]剥离所述第一光阻层。\n\n[0025]在本申请的制作方法中，\n\n[0026]所述导电单体位于所述驱动电路板上，一所述导电单体对应且覆盖一所述端子。\n\n[0027]在本申请的制作方法中，\n\n[0028]所述导电薄膜层的厚度为0.5～3微米。\n\n[0029]在本申请的制作方法中，所述导电薄膜层的的材料包括锡。\n\n[0030]在本申请的制作方法中，\n\n[0031]利用第一温度使所述导电单体呈熔融状态的步骤包括：\n\n[0032]将形成有发光单体的所述衬底设置于预定加热装置中；\n\n[0033]利用第一温度使所述导电单体呈熔融状态，使得所述发光单体与所述驱动电路板中的至少一端子电连接；\n\n[0034]其中，所述第一温度大于232℃。\n\n[0035]本申请还提出了一种微型发光二极管，其包括衬底、位于所述衬底上的驱动电路板、位于所述驱动电路板上的导电单体及位于所述导电单体上的发光单体；以及\n\n[0036]位于所述驱动电路板上的隔热层，所述隔热层包括与所述端子一一对应的第一开口。\n\n[0037]有益效果：本申请通过在驱动电路板的端子上设置锡金属单体对端子区域进行定位，当锡金属与LED发光单体完成对位后，通过锡金属的低熔点性能，并利用预定温度使锡金属单体熔融，使得LED发光单体与端子电连接，完成LED发光单体与驱动电路板的对位，使得锡点的位置固定，不易扩散或偏移，消除暗点。\n\n附图说明\n\n[0038]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0039]图1为本申请微型发光二极管制作方法的步骤图；\n\n[0040]图2A～图2F为本申请微型发光二极管制作方法的工艺流程图；\n\n[0041]图3为本申请微型发光二极管的结构图。\n\n具体实施方式\n\n[0042]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0043]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0044]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0045]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0046]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0047]请参阅图1，图1为本申请微型发光二极管制作方法的步骤图。\n\n[0048]请参阅图2A～图2F，图2A～图2F为本申请微型发光二极管制作方法的工艺流程图。\n\n[0049]所述微型发光二极管100的制作方法包括：\n\n[0050]S10、在设置有多个驱动电路板20的衬底10上形成一导电薄膜层30；\n\n[0051]请参阅图2A，步骤S10具体包括：\n\n[0052]S101、在所述衬底10上形成多个驱动电路板20；\n\n[0053]所述衬底10为一圆晶衬底10基板。\n\n[0054]在本实施例中，所述衬底10可以为蓝宝石衬底10基板，本申请没有具体的限制。\n\n[0055]所述驱动电路板20可以直接在所述衬底10上进行制作，或者将制作好的驱动电路板20通过预定工艺固定在所述衬底10上，本申请不作具体限制。\n\n[0056]所述驱动电路板20包括驱动电路层201及位于所述驱动电路层201上的至少一端子202。所述端子202位于所述驱动电路层201远离所述衬底10一侧。\n\n[0057]S102、在所述衬底10上沉积一所述导电薄膜层30；\n\n[0058]请参阅图2B，本步骤通过原子溅射等工艺在所述衬底10上沉积一导电薄膜层30，所述导电薄膜层30覆盖所述驱动电路板20及所述衬底10。\n\n[0059]在本实施例中，所述导电薄膜层30的材料为低熔点的金属。\n\n[0060]在本实施例中，所述导电薄膜层30的材料可以为锡，熔点为231.89℃。\n\n[0061]在本实施例中，所述导电薄膜层30的厚度为0.5～3微米。\n\n[0062]请参阅图2C，在步骤S102之前，该制作方法还可以包括：\n\n[0063]在所述驱动电路板20表面设置一隔热层40。\n\n[0064]由于本申请通过锡金属的低熔点性能将锡点进行固定，因此在后期需要进行将驱动电路板20加入高温环境进行加热。而金属锡的熔点为231.89℃，而驱动电路板20内存在一些不耐高温材料，避免因高温而导致所述驱动电路板20的失效。\n\n[0065]所述隔热层40还包括至少一第一开口401。所述第一开口401与所述端子202一一对应。\n\n[0066]在本实施例中，所述隔热层40的厚度可以小于所述端子202的厚度。当后面制程中锡金属单体熔融时，可以向端子202两侧均匀扩散，使得所述端子202可以通过金属锡与对应发光单体50电连接。\n\n[0067]在本实施例中，所述第一开口401的面积大于所述端子202在所述驱动电路板20上投影面的面积。\n\n[0068]在本实施例中，所述隔热层40还可以将所述驱动电路板20完全覆盖，进一步避免所述驱动电路板20的失效。\n\n[0069]S20、对所述导电薄膜层30进行图案化处理，使所述导电薄膜层30形成多个导电单体301；\n\n[0070]请参阅图2D，步骤S20具体包括：\n\n[0071]S201、在所述导电薄膜层30上涂覆第一光阻层；\n\n[0072]在本实施例中，所述第一光阻层的材料可以为显性光刻胶或者隐形光刻胶，本申请以显性光刻胶为例进行说明。\n\n[0073]S202、利用掩膜版对所述第一光阻层及导电薄膜层30进行曝光、显影及蚀刻处理，使所述导电薄膜层30形成多个导电单体301；\n\n[0074]S203、剥离所述第一光阻层。\n\n[0075]在本实施例中，所述掩摸版包括多个开口，每一开口对应一所述导电单体301。该开口的面积与所述导电单体301在所述衬底10上的正投影面的面积相等。\n\n[0076]在本实施例中，所述导电单体301位于所述驱动电路板20上，一所述导电单体301对应且覆盖一所述端子202。\n\n[0077]S30、在所述导电单体301上形成至少一发光单体50；\n\n[0078]请参阅图2E，所述发光单体50可以为Mico-LED、Mini-LED等，本申请不作具体限制。\n\n[0079]在本实施例中，所述发光单体50的表面同样可以设置一隔热层40，以避免所述发光单体50因高温环境而失效。\n\n[0080]在本实施例中，一发光单体50对应两个所述导电单体301。\n\n[0081]S40、利用第一温度使所述导电单体301呈熔融状态，使所述发光单体50与所述驱动电路板20电连接。\n\n[0082]请参阅图2F，步骤S40具体包括：\n\n[0083]S401、将形成有发光单体50的所述衬底10设置于预定加热装置中；\n\n[0084]S402、利用第一温度使所述导电单体301呈熔融状态，使得所述发光单体50与所述驱动电路板20中的至少一端子202电连接；\n\n[0085]在本步骤中，可以通过预定加热装置对所述导电单体301进行定向加热。由于导电单体301上存在发光单体50，因此需要对所述发光单体50对应的所述导电单体301同时进行加热，防止所述导电单体301倾斜。\n\n[0086]在本实施例中，还可以对整个装置同时进行加热，此时需要保证驱动电路板20及发光单体50的隔热性能。\n\n[0087]在本实施例中，所述第一温度可以大于或等于232℃。由于金属锡的熔点为231.89℃，因此温度的设置需要在保证金属锡融化。另外，在避免驱动电路板20及发光单体50失效的前提下，加热温度过高，具体温度值可以根据实际产品进行设置。\n\n[0088]然后进行所述微型发光二极管100后续制程工艺，由于后续制程工艺为现有技术，本申请不再赘述。\n\n[0089]请参阅图3，图3为本申请微型发光二极管的结构图。\n\n[0090]所述微型发光二极管100包括衬底10、位于所述衬底10上的驱动电路板20、位于所述驱动电路板20上的导电单体301及位于所述导电单体301上的发光单体50。\n\n[0091]在本实施例中，所述衬底10可以为蓝宝石衬底10基板，本申请没有具体的限制。\n\n[0092]所述驱动电路板20可以直接在所述衬底10上进行制作，或者将制作好的驱动电路板20通过预定工艺固定在所述衬底10上，本申请不作具体限制。\n\n[0093]所述驱动电路板20包括驱动电路层201及位于所述驱动电路层201上的至少一端子202。所述端子202位于所述驱动电路层201远离所述衬底10一侧。\n\n[0094]所述导电单体301由一导电薄膜层30经图案化制成。所述导电单体301覆盖所述驱动电路板20上的端子202。\n\n[0095]在本实施例中，所述导电单体301的材料为低熔点的金属。\n\n[0096]在本实施例中，所述导电单体301的材料可以为锡，熔点为231.89℃。\n\n[0097]所述发光单体50通过所述导电单体301与所述驱动电路板20电连接。所述发光单体50可以为Mico-LED、Mini-LED等，本申请不作具体限制。\n\n[0098]请参阅图3，所述微型发光二极管100还包括位于所述驱动电路板20上的隔热层40。\n\n[0099]由于本申请通过微型发光二极管100通过将金属锡熔融以固定所述金属锡的位置以及发光单体50的位置。而加热装置对金属进行加热时，所述驱动电路板20还将收到高温的影响，而驱动电路板20内存在一些不耐高温材料，所述隔热层40的存在避免了因高温而导致所述驱动电路板20的失效。\n\n[0100]请参阅图2C，所述隔热层40还包括至少一第一开口401。所述第一开口401与所述端子202一一对应。\n\n[0101]在本实施例中，所述隔热层40的厚度可以小于所述端子202的厚度。当锡金属熔融时，可以向端子202两侧均匀扩散，使得所述端子202可以通过金属锡与对应发光单体50电连接。\n\n[0102]在本实施例中，所述第一开口401的面积大于所述端子202在所述驱动电路板20上投影面的面积。\n\n[0103]在本实施例中，所述隔热层40还可以将所述驱动电路板20完全覆盖，进一步避免所述驱动电路板20的失效。\n\n[0104]所述微型发光二极管的具体结构及原理与上述微型发光二极管的制备方法相同或相似，本申请不再赘述。\n\n[0105]本申请提出了一种微型发光二极管及其制作方法，该制作方法包括在设置有多个驱动电路板的衬底上形成多个导电单体；在该导电单体上形成至少一发光单体；利用第一温度使该导电单体呈熔融状态，使该发光单体与该驱动电路板电连接。本申请通过在驱动电路板的端子上设置锡金属单体对端子区域进行定位，当锡金属与LED发光单体完成对位后，通过锡金属的低熔点性能，并利用预定温度使锡金属单体熔融，使得LED发光单体与端子电连接，完成LED发光单体与驱动电路板的对位，使得锡点的位置固定，不易扩散或偏移，消除暗点。\n\n[0106]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0107]以上对本申请实施例所提供的一种电子装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10814, 23868, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种曲面显示装置。\n\n背景技术\n\n[0002]现有的曲面显示的背光结构，一般采用侧入式LED背光方案，从曲面长边侧入光的方式提供光源。这一现有技术主要有如下缺陷：1、LED灯条不能完全匹配曲面长边曲率(LED灯不能折弯)，入光侧局部容易形成暗亮不均的阴影，特别是曲率比较大时较为严重；2、传统侧入式背光，曲面扩散板需要重新开模及曲面导光网点调试，生产验证周期长；如果采用平面扩散板二次热弯加工的方式，光学均匀性无法保证。3、曲面面板弯曲后四角落(图1中A区域)容易出现黑态漏光问题。\n\n[0003]因此，有必要提供一种曲面显示装置，以改善现有技术中存在的问题。\n\n发明内容\n\n[0004]本发明提供一种曲面显示装置，用以实现曲面弯折显示，以及减少面板四个角落的黑态漏光问题。\n\n[0005]本发明提供一种曲面显示装置，包括：直下式背光结构，所述直下式背光结构的背光源为一MiniLED灯板；曲面显示面板，设于所述直下式背光结构上；其中，所述MiniLED灯板的上表面至所述曲面显示面板的液晶层垂直距离为第一距离，所述MiniLED灯板的下表面至所述曲面显示面板的液晶层的垂直距离为第二距离，所述MiniLED灯板的上表面曲率为所述曲面显示面板中液晶层的曲率(R)与所述第一距离之差，所述MiniLED灯板的下表面曲率为所述曲面显示面板中液晶层的曲率(R)与所述第二距离之差。\n\n[0006]进一步地，所述直下式背光结构包括：底板，所述MiniLED灯板设于所述底板上，所述底板具有一水平段以及竖直段，所述竖直段垂直所述水平段；磷光体，设于所述MiniLED灯板上；扩散板，设于所述磷光体上光学膜层，设于所述扩散板上；胶框，一部分抵靠所述竖直段，另一部分设于所述光学膜层上。\n\n[0007]进一步地，所述MiniLED灯板与所述磷光体之间设有一反射膜层。\n\n[0008]进一步地，所述曲面显示面板与所述直下式背光结构之间设有一胶层。\n\n[0009]进一步地，所述曲面显示面板包括：下偏光片；阵列基板，设于所述下偏光片的一侧；所述液晶层设于所述阵列基板远离所述下偏光片的一侧；彩膜基板，设于所述液晶层远离所述阵列基板的一侧；上偏光片，设于所述彩膜基板远离所述液晶层的一侧。\n\n[0010]进一步地，所述磷光体与所述扩散板之间设有一混光距离，和/或，所述光学膜层与所述胶框之间设有一间隙。\n\n[0011]进一步地，所述光学膜层包括：下棱镜膜，设于所述扩散板的一侧；上棱镜膜，设于所述下棱镜膜远离所述扩散板的一侧。\n\n[0012]进一步地，所述竖直段具有一凹槽，所述扩散板具有一相对应的凸起，所述凸起对应的卡设于所述凹槽中。\n\n[0013]进一步地，所述MiniLED灯板包括：基板；蓝光芯片，设于所述基板上。\n\n[0014]进一步地，所述扩散板的厚度为1.0-1.2mm；和/或，所述底板的厚度为1.0-1.2mm。\n\n[0015]本发明提供一种曲面显示装置，通过采用直下式的背光结构，背光源为一MiniLED灯板。避免了传统侧入式曲面背光，入光侧易出现亮暗不均的问题。因采用整面直下式背光的方式，不会存在局部亮暗灯影。并且MiniLED灯板可以实现弯折，可以完全匹配曲面显示装置的曲率。并且可以取消了扩散板及曲面网点调试的环节，减小了开发费用，验证周期也大大缩短。最后可对背光源实施局部调光算法，对漏光的局部亮度并进行调控。\n\n附图说明\n\n[0016]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0017]图1为现有技术曲面显示装置的角落漏光的示意图。\n\n[0018]图2为本发明一实施例提供的曲面显示装置的结构示意图。\n\n[0019]图3为本发明其它实施例提供的凹面显示装置的结构示意图。\n\n[0020]曲面显示装置10；直下式背光结构100；曲面显示面板200；\n\n[0021]胶层108；下偏光片201；阵列基板202；\n\n[0022]彩膜基板204；上偏光片205；液晶层203；\n\n[0023]底板101；导热胶带102；磷光体104；\n\n[0024]扩散板105；光学膜层106；胶框107；\n\n[0025]水平段1011；竖直段1012；MiniLED灯板103；\n\n[0026]凹槽1013；凸起1051；间隙110；\n\n[0027]下棱镜膜1062；上棱镜膜1061；混光距离109。\n\n具体实施方式\n\n[0028]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0029]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0030]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0031]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0032]下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0033]如图2所示，本发明一实施例的提供的一种曲面显示装置10，包括：直下式背光结构100以及曲面显示面板200。\n\n[0034]所述直下式背光结构100的背光源为一MiniLED灯板103。所述直下式背光结构100能够避免传统侧入式曲面背光，入光侧易出现亮暗不均的问题。因采用整面直下式背光的方式，不会存在局部亮暗灯影。并且MiniLED灯板103可以实现弯折，可以完全匹配曲面显示装置10的曲率。\n\n[0035]所述曲面显示面板200设于所述直下式背光结构100上，所述曲面显示装置10为凸面显示。\n\n[0036]所述MiniLED灯板103的上表面至所述曲面显示面板200的液晶层203的垂直距离为第一距离，所述MiniLED灯板103的下表面至所述曲面显示面板200的液晶层203的垂直距离为第二距离，所述MiniLED灯板103的上表面曲率为所述曲面显示面板200中液晶层203的曲率(R)与所述第一距离之差，所述MiniLED灯板103的下表面曲率为所述曲面显示面板200中液晶层203的曲率(R)与所述第二距离之差。其中，700[0037]本发明提供的曲面显示装置10采用MiniLED直下式的背光结构设计，可以有效解决侧入式背光中入光侧局部暗亮不均。\n\n[0038]并且MiniLED灯板103的上下表面的曲率根据与所述液晶层203的距离进行制备，可以实现直下式背光结构100以及曲面显示面板200的部分弯曲，实现曲面显示装置10的凸面显示。\n\n[0039]所述曲面显示面板200与所述直下式背光结构100之间设有一胶层108。所述胶层108为泡棉胶。\n\n[0040]所述曲面显示面板200包括：下偏光片201、阵列基板202、彩膜基板204以及上偏光片205。\n\n[0041]所述阵列基板202设于所述下偏光片201的一侧；所述液晶层203设于所述阵列基板202远离所述下偏光片201的一侧；所述彩膜基板204设于所述液晶层203远离所述阵列基板202的一侧；所述上偏光片205设于所述彩膜基板204远离所述液晶层203的一侧。\n\n[0042]所述阵列基板202以及所述彩膜基板204的厚度皆为h0，则彩膜基板204上表面的曲率为R1，其中R1＝R+h0，所以能使该结构可以弯曲，并能保持稳定弯曲结构，实现曲面显示。\n\n[0043]则阵列基板202下表面的曲率半径为R2，其中R2＝R-h0，所以能使该结构可以弯曲，并能保持稳定弯曲结构，实现曲面显示。\n\n[0044]所述上偏光片205的厚度为h1，则所述上偏光片205的上表面的曲率半径为R3，其中R3＝(R+h0+h1)，所以能使该结构可以弯曲，并能保持稳定弯曲结构，实现曲面显示。\n\n[0045]所述下偏光片201的厚度为h2，则所述下偏光片201的下表面的曲率半径为R4，其中R4＝(R-h0-h1)，所以能使该结构可以弯曲，并能保持稳定弯曲结构，实现曲面显示。\n\n[0046]所述直下式背光结构100包括：底板101、导热胶带102、磷光体104、扩散板105、光学膜层106以及胶框107。\n\n[0047]所述底板101具有一水平段1011以及竖直段1012，所述竖直段1012垂直所述水平段1011。\n\n[0048]所述水平段1011需要具有一定的抗弯折性能，厚度为1.0-1.2mm，显示装置尺寸越大，水平段1011厚度也需要越厚。\n\n[0049]所述导热胶带102设于所述底板101的水平段1011上。\n\n[0050]所述MiniLED灯板103设于所述导热胶带102上；所述扩散板105设于所述磷光体104上。所述光学膜层106设于所述扩散板105上。\n\n[0051]所述竖直段1012具有一凹槽1013，所述扩散板105具有一相对应的凸起1051，所述凸起1051对应的卡设于所述凹槽1013中。组装方便，可以使扩散板105弯曲后更加的稳固。\n\n[0052]扩散板105建议不要选太厚，否则弯曲后反弹力过大容易造成整个背光曲率改变；同时也不建议选用太薄，否则因为弯曲后无法支撑其上膜片容易塌陷；此处根据实际样品强度建议选用厚度1.0-1.2mm。\n\n[0053]所述光学膜层106可以安装在所述扩散板105上，也可以与扩散板105安装相同结构，即设置凸起1051与凹槽1013进行组合安装，用以使弯曲后更加的稳固。\n\n[0054]所述光学膜层106包括：下棱镜膜1062以及上棱镜膜1061。\n\n[0055]所述下棱镜膜1062设于所述扩散板105的一侧；所述上棱镜膜1061设于所述下棱镜膜1062远离所述扩散板105的一侧。\n\n[0056]所述胶框107一部分1017抵靠所述竖直段1012，另一部分1072设于所述光学膜层106上。\n\n[0057]所述磷光体104与所述扩散板105之间设有一混光距离109，和/或，所述光学膜层106与所述胶框107之间设有一间隙110。\n\n[0058]关于所述混光距离109的设计：扩散板105下方留有一定光学混光距离109，使最终出光均匀；混光距离109主要和背光源的间距、背光源发光角度以及扩散板雾度等有关。混光距离109太小，则最终背光可能会看到LED灯影，太大则造成模组厚度及材料的浪费。\n\n[0059]所述MiniLED灯板103包括：基板以及蓝光芯片。\n\n[0060]所述基板采用FPC基材的软灯板。\n\n[0061]所述蓝光芯片设于所述基板上，采用板上芯片(COB)技术，将蓝光芯片直接打键到FPC基板上，再整面覆盖硅胶保护层。最后将磷光体104贴附到硅胶层108上表面，磷光体104的作用是将蓝光芯片发出的蓝光转换为白光，同时可实现模组高色域显示。\n\n[0062]COB方案不建议整面贴附导热胶带102，一方面是因为整面贴附容易产生气泡且不易排出；另一方面是因为气泡附近蓝光芯片发光位置倾斜，容易造成局部亮度不均；所以将导热胶带102贴附为多条平行的线性形状。\n\n[0063]所述胶层108的厚度为h3，所述胶框107的另一部分的厚度h4，所述光学膜层106与所述胶框107之间的间隙110厚度为h5，所述上棱镜膜1061的厚度为h6，所述下棱镜膜1062的厚度为h7。\n\n[0064]所述上棱镜膜1061的上表面的曲率为R5，其中R5＝(R-h0-h2-h3-h4-h5)，则下棱镜膜1062的上表面的曲率为R6，其中R6＝(R-h0-h2-h3-h4-h5-h6)。所以能使光学膜片的结构可以弯曲，并能保持稳定弯曲结构，实现曲面显示。\n\n[0065]所述扩散板105的厚度为h8。则扩散板105的上表面的曲率为R7，其中R7＝(R-h0-h2-h3-h4-h5-h6-h7)，则扩散板105的下表面的曲率为R8，其中R8＝(R-h0-h2-h3-h4-h5-h6-h7-h8)。所以能使扩散板105结构可以弯曲，并能保持稳定弯曲结构，实现曲面显示。\n\n[0066]所述混光距离109为h9。MiniLED灯板103及磷光体104看做一个整体结构，其总厚度为h10。\n\n[0067]磷光体104的上表面曲率为R9，其中R9＝(R-h0-h2-h3-h4-h5-h6-h7-h8-h9)。MiniLED灯板103的下表面曲率为R10，其中R10＝(800-h0-h2-h3-h4-h5-h6-h7-h8-h9-h10)，所以能使MiniLED灯板103及磷光体104结构可以弯曲，并能保持稳定弯曲结构，实现曲面显示。\n\n[0068]导热胶带102厚度h11，水平段1011的厚度h12。导热胶带102下表面曲率为R11，其中R11＝(800-h0-h2-h3-h4-h5-h6-h7-h8-h9-h10-h11)，底背板下表面曲率为R12，其中R12＝(800-h0-h2-h3-h4-h5-h6-h7-h8-h9-h10-h11-h12)。所以导热胶带102以及水平段1011的结构可以弯曲，并能保持稳定弯曲结构，实现曲面显示。\n\n[0069]如图3所示，在其它实施例中，所述曲面显示装置10为凹面显示。凹面显示装置结构部件与凸面显示装置相同，由于弯曲方向不同，所以根依照各叠层的厚度进行同心圆曲率半径的增减，从而达到对不同膜层的尺寸进行匹配。\n\n[0070]在其它实施例中，所述MiniLED灯板103与所述磷光体104之间设有一反射膜层，由于反射膜层、MiniLED灯板103与所述磷光体104都看做一个整体结构，所以在这一实施例中，曲率半径的增减以及尺寸的选择与一实施例相同。\n\n[0071]本发明的结构方案同样适用于不同曲率，但相应的扩散板105厚度需要适当调整：根据扩散板105的支撑强度以及反弹力进行评估：扩散板105越厚，反弹力越大，此时适用于曲率偏小的应用场景；扩散板105越薄，反弹越小，此时适用于曲率偏大一点的场景。但扩散板105也不宜过薄，否则支撑强度较差，扩散雾度也无法达到光学均匀性要求。\n\n[0072]为了解决曲面显示装置10黑态时四边缘角落位置容易漏光，本发明通过设置MiniLED灯板103作为曲面显示装置10的背光。\n\n[0073]当L0黑态时，可通过调节局部发光算法，控制漏光局部亮度分区进行调控。\n\n[0074]具体地实施如下步骤。\n\n[0075]步骤1)显示L0灰阶时，通过光学面扫设备测量曲面显示装置10整面亮度均匀性。\n\n[0076]步骤2)对均匀性性差的局部区域进行标记，定位到具体的背光分区号以及该分区需要补偿的亮度值△B，同时计算出背光的平均亮度B0。\n\n[0077]步骤3)当标记分区显示L0灰阶时，需要对该分区的背光电流进行补偿修正：若背光为直流电流模式，该分区原电流为I0，则补偿后电流为(1+△B/B)I0；若背光为PWM脉冲电流模式，该分区原脉宽为R％，则补偿后脉宽为(1+△B/B)R。\n\n[0078]按照步骤1)～步骤3)，对所有需要补偿的灰阶及分区进行批次处理，直到亮度均匀性符合，并检测的精度要求。\n\n[0079]本发明提供一种曲面显示装置10，通过采用直下式的背光结构，背光源为一MiniLED灯板103。避免了传统侧入式曲面背光，入光侧易出现亮暗不均的问题。因采用整面直下式背光的方式，不会存在局部亮暗灯影。并且MiniLED灯板103可以实现弯折，可以完全匹配曲面显示装置10的曲率。并且可以取消了扩散板105及曲面网点调试的环节，减小了开发费用，验证周期也大大缩短。最后可对背光源实施局部调光算法，对漏光的局部亮度并进行调控。\n\n[0080]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0081]以上对本发明进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种曲面显示装置。\n\n背景技术\n\n[0002]现有的曲面显示的背光结构，一般采用侧入式LED背光方案，从曲面长边侧入光的方式提供光源。这一现有技术主要有如下缺陷：1、LED灯条不能完全匹配曲面长边曲率(LED灯不能折弯)，入光侧局部容易形成暗亮不均的阴影，特别是曲率比较大时较为严重；2、传统侧入式背光，曲面扩散板需要重新开模及曲面导光网点调试，生产验证周期长；如果采用平面扩散板二次热弯加工的方式，光学均匀性无法保证。3、曲面面板弯曲后四角落(图1中A区域)容易出现黑态漏光问题。\n\n[0003]因此，有必要提供一种曲面显示装置，以改善现有技术中存在的问题。\n\n发明内容\n\n[0004]本发明提供一种曲面显示装置，用以实现曲面弯折显示，以及减少面板四个角落的黑态漏光问题。\n\n[0005]本发明提供一种曲面显示装置，包括：直下式背光结构，所述直下式背光结构的背光源为一MiniLED灯板；曲面显示面板，设于所述直下式背光结构上；其中，所述MiniLED灯板的上表面至所述曲面显示面板的液晶层垂直距离为第一距离，所述MiniLED灯板的下表面至所述曲面显示面板的液晶层的垂直距离为第二距离，所述MiniLED灯板的上表面曲率为所述曲面显示面板中液晶层的曲率(R)与所述第一距离之差，所述MiniLED灯板的下表面曲率为所述曲面显示面板中液晶层的曲率(R)与所述第二距离之差。\n\n[0006]进一步地，所述直下式背光结构包括：底板，所述MiniLED灯板设于所述底板上，所述底板具有一水平段以及竖直段，所述竖直段垂直所述水平段；磷光体，设于所述MiniLED灯板上；扩散板，设于所述磷光体上光学膜层，设于所述扩散板上；胶框，一部分抵靠所述竖直段，另一部分设于所述光学膜层上。\n\n[0007]进一步地，所述MiniLED灯板与所述磷光体之间设有一反射膜层。\n\n[0008]进一步地，所述曲面显示面板与所述直下式背光结构之间设有一胶层。\n\n[0009]进一步地，所述曲面显示面板包括：下偏光片；阵列基板，设于所述下偏光片的一侧；所述液晶层设于所述阵列基板远离所述下偏光片的一侧；彩膜基板，设于所述液晶层远离所述阵列基板的一侧；上偏光片，设于所述彩膜基板远离所述液晶层的一侧。\n\n[0010]进一步地，所述磷光体与所述扩散板之间设有一混光距离，和/或，所述光学膜层与所述胶框之间设有一间隙。\n\n[0011]进一步地，所述光学膜层包括：下棱镜膜，设于所述扩散板的一侧；上棱镜膜，设于所述下棱镜膜远离所述扩散板的一侧。\n\n[0012]进一步地，所述竖直段具有一凹槽，所述扩散板具有一相对应的凸起，所述凸起对应的卡设于所述凹槽中。\n\n[0013]进一步地，所述MiniLED灯板包括：基板；蓝光芯片，设于所述基板上。\n\n[0014]进一步地，所述扩散板的厚度为1.0-1.2mm；和/或，所述底板的厚度为1.0-1.2mm。\n\n[0015]本发明提供一种曲面显示装置，通过采用直下式的背光结构，背光源为一MiniLED灯板。避免了传统侧入式曲面背光，入光侧易出现亮暗不均的问题。因采用整面直下式背光的方式，不会存在局部亮暗灯影。并且MiniLED灯板可以实现弯折，可以完全匹配曲面显示装置的曲率。并且可以取消了扩散板及曲面网点调试的环节，减小了开发费用，验证周期也大大缩短。最后可对背光源实施局部调光算法，对漏光的局部亮度并进行调控。\n\n附图说明\n\n[0016]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0017]图1为现有技术曲面显示装置的角落漏光的示意图。\n\n[0018]图2为本发明一实施例提供的曲面显示装置的结构示意图。\n\n[0019]图3为本发明其它实施例提供的凹面显示装置的结构示意图。\n\n[0020]曲面显示装置10；直下式背光结构100；曲面显示面板200；\n\n[0021]胶层108；下偏光片201；阵列基板202；\n\n[0022]彩膜基板204；上偏光片205；液晶层203；\n\n[0023]底板101；导热胶带102；磷光体104；\n\n[0024]扩散板105；光学膜层106；胶框107；\n\n[0025]水平段1011；竖直段1012；MiniLED灯板103；\n\n[0026]凹槽1013；凸起1051；间隙110；\n\n[0027]下棱镜膜1062；上棱镜膜1061；混光距离109。\n\n具体实施方式\n\n[0028]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0029]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0030]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0031]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0032]下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0033]如图2所示，本发明一实施例的提供的一种曲面显示装置10，包括：直下式背光结构100以及曲面显示面板200。\n\n[0034]所述直下式背光结构100的背光源为一MiniLED灯板103。所述直下式背光结构100能够避免传统侧入式曲面背光，入光侧易出现亮暗不均的问题。因采用整面直下式背光的方式，不会存在局部亮暗灯影。并且MiniLED灯板103可以实现弯折，可以完全匹配曲面显示装置10的曲率。\n\n[0035]所述曲面显示面板200设于所述直下式背光结构100上，所述曲面显示装置10为凸面显示。\n\n[0036]所述MiniLED灯板103的上表面至所述曲面显示面板200的液晶层203的垂直距离为第一距离，所述MiniLED灯板103的下表面至所述曲面显示面板200的液晶层203的垂直距离为第二距离，所述MiniLED灯板103的上表面曲率为所述曲面显示面板200中液晶层203的曲率(R)与所述第一距离之差，所述MiniLED灯板103的下表面曲率为所述曲面显示面板200中液晶层203的曲率(R)与所述第二距离之差。其中，700[0037]本发明提供的曲面显示装置10采用MiniLED直下式的背光结构设计，可以有效解决侧入式背光中入光侧局部暗亮不均。\n\n[0038]并且MiniLED灯板103的上下表面的曲率根据与所述液晶层203的距离进行制备，可以实现直下式背光结构100以及曲面显示面板200的部分弯曲，实现曲面显示装置10的凸面显示。\n\n[0039]所述曲面显示面板200与所述直下式背光结构100之间设有一胶层108。所述胶层108为泡棉胶。\n\n[0040]所述曲面显示面板200包括：下偏光片201、阵列基板202、彩膜基板204以及上偏光片205。\n\n[0041]所述阵列基板202设于所述下偏光片201的一侧；所述液晶层203设于所述阵列基板202远离所述下偏光片201的一侧；所述彩膜基板204设于所述液晶层203远离所述阵列基板202的一侧；所述上偏光片205设于所述彩膜基板204远离所述液晶层203的一侧。\n\n[0042]所述阵列基板202以及所述彩膜基板204的厚度皆为h0，则彩膜基板204上表面的曲率为R1，其中R1＝R+h0，所以能使该结构可以弯曲，并能保持稳定弯曲结构，实现曲面显示。\n\n[0043]则阵列基板202下表面的曲率半径为R2，其中R2＝R-h0，所以能使该结构可以弯曲，并能保持稳定弯曲结构，实现曲面显示。\n\n[0044]所述上偏光片205的厚度为h1，则所述上偏光片205的上表面的曲率半径为R3，其中R3＝(R+h0+h1)，所以能使该结构可以弯曲，并能保持稳定弯曲结构，实现曲面显示。\n\n[0045]所述下偏光片201的厚度为h2，则所述下偏光片201的下表面的曲率半径为R4，其中R4＝(R-h0-h1)，所以能使该结构可以弯曲，并能保持稳定弯曲结构，实现曲面显示。\n\n[0046]所述直下式背光结构100包括：底板101、导热胶带102、磷光体104、扩散板105、光学膜层106以及胶框107。\n\n[0047]所述底板101具有一水平段1011以及竖直段1012，所述竖直段1012垂直所述水平段1011。\n\n[0048]所述水平段1011需要具有一定的抗弯折性能，厚度为1.0-1.2mm，显示装置尺寸越大，水平段1011厚度也需要越厚。\n\n[0049]所述导热胶带102设于所述底板101的水平段1011上。\n\n[0050]所述MiniLED灯板103设于所述导热胶带102上；所述扩散板105设于所述磷光体104上。所述光学膜层106设于所述扩散板105上。\n\n[0051]所述竖直段1012具有一凹槽1013，所述扩散板105具有一相对应的凸起1051，所述凸起1051对应的卡设于所述凹槽1013中。组装方便，可以使扩散板105弯曲后更加的稳固。\n\n[0052]扩散板105建议不要选太厚，否则弯曲后反弹力过大容易造成整个背光曲率改变；同时也不建议选用太薄，否则因为弯曲后无法支撑其上膜片容易塌陷；此处根据实际样品强度建议选用厚度1.0-1.2mm。\n\n[0053]所述光学膜层106可以安装在所述扩散板105上，也可以与扩散板105安装相同结构，即设置凸起1051与凹槽1013进行组合安装，用以使弯曲后更加的稳固。\n\n[0054]所述光学膜层106包括：下棱镜膜1062以及上棱镜膜1061。\n\n[0055]所述下棱镜膜1062设于所述扩散板105的一侧；所述上棱镜膜1061设于所述下棱镜膜1062远离所述扩散板105的一侧。\n\n[0056]所述胶框107一部分1017抵靠所述竖直段1012，另一部分1072设于所述光学膜层106上。\n\n[0057]所述磷光体104与所述扩散板105之间设有一混光距离109，和/或，所述光学膜层106与所述胶框107之间设有一间隙110。\n\n[0058]关于所述混光距离109的设计：扩散板105下方留有一定光学混光距离109，使最终出光均匀；混光距离109主要和背光源的间距、背光源发光角度以及扩散板雾度等有关。混光距离109太小，则最终背光可能会看到LED灯影，太大则造成模组厚度及材料的浪费。\n\n[0059]所述MiniLED灯板103包括：基板以及蓝光芯片。\n\n[0060]所述基板采用FPC基材的软灯板。\n\n[0061]所述蓝光芯片设于所述基板上，采用板上芯片(COB)技术，将蓝光芯片直接打键到FPC基板上，再整面覆盖硅胶保护层。最后将磷光体104贴附到硅胶层108上表面，磷光体104的作用是将蓝光芯片发出的蓝光转换为白光，同时可实现模组高色域显示。\n\n[0062]COB方案不建议整面贴附导热胶带102，一方面是因为整面贴附容易产生气泡且不易排出；另一方面是因为气泡附近蓝光芯片发光位置倾斜，容易造成局部亮度不均；所以将导热胶带102贴附为多条平行的线性形状。\n\n[0063]所述胶层108的厚度为h3，所述胶框107的另一部分的厚度h4，所述光学膜层106与所述胶框107之间的间隙110厚度为h5，所述上棱镜膜1061的厚度为h6，所述下棱镜膜1062的厚度为h7。\n\n[0064]所述上棱镜膜1061的上表面的曲率为R5，其中R5＝(R-h0-h2-h3-h4-h5)，则下棱镜膜1062的上表面的曲率为R6，其中R6＝(R-h0-h2-h3-h4-h5-h6)。所以能使光学膜片的结构可以弯曲，并能保持稳定弯曲结构，实现曲面显示。\n\n[0065]所述扩散板105的厚度为h8。则扩散板105的上表面的曲率为R7，其中R7＝(R-h0-h2-h3-h4-h5-h6-h7)，则扩散板105的下表面的曲率为R8，其中R8＝(R-h0-h2-h3-h4-h5-h6-h7-h8)。所以能使扩散板105结构可以弯曲，并能保持稳定弯曲结构，实现曲面显示。\n\n[0066]所述混光距离109为h9。MiniLED灯板103及磷光体104看做一个整体结构，其总厚度为h10。\n\n[0067]磷光体104的上表面曲率为R9，其中R9＝(R-h0-h2-h3-h4-h5-h6-h7-h8-h9)。MiniLED灯板103的下表面曲率为R10，其中R10＝(800-h0-h2-h3-h4-h5-h6-h7-h8-h9-h10)，所以能使MiniLED灯板103及磷光体104结构可以弯曲，并能保持稳定弯曲结构，实现曲面显示。\n\n[0068]导热胶带102厚度h11，水平段1011的厚度h12。导热胶带102下表面曲率为R11，其中R11＝(800-h0-h2-h3-h4-h5-h6-h7-h8-h9-h10-h11)，底背板下表面曲率为R12，其中R12＝(800-h0-h2-h3-h4-h5-h6-h7-h8-h9-h10-h11-h12)。所以导热胶带102以及水平段1011的结构可以弯曲，并能保持稳定弯曲结构，实现曲面显示。\n\n[0069]如图3所示，在其它实施例中，所述曲面显示装置10为凹面显示。凹面显示装置结构部件与凸面显示装置相同，由于弯曲方向不同，所以根依照各叠层的厚度进行同心圆曲率半径的增减，从而达到对不同膜层的尺寸进行匹配。\n\n[0070]在其它实施例中，所述MiniLED灯板103与所述磷光体104之间设有一反射膜层，由于反射膜层、MiniLED灯板103与所述磷光体104都看做一个整体结构，所以在这一实施例中，曲率半径的增减以及尺寸的选择与一实施例相同。\n\n[0071]本发明的结构方案同样适用于不同曲率，但相应的扩散板105厚度需要适当调整：根据扩散板105的支撑强度以及反弹力进行评估：扩散板105越厚，反弹力越大，此时适用于曲率偏小的应用场景；扩散板105越薄，反弹越小，此时适用于曲率偏大一点的场景。但扩散板105也不宜过薄，否则支撑强度较差，扩散雾度也无法达到光学均匀性要求。\n\n[0072]为了解决曲面显示装置10黑态时四边缘角落位置容易漏光，本发明通过设置MiniLED灯板103作为曲面显示装置10的背光。\n\n[0073]当L0黑态时，可通过调节局部发光算法，控制漏光局部亮度分区进行调控。\n\n[0074]具体地实施如下步骤。\n\n[0075]步骤1)显示L0灰阶时，通过光学面扫设备测量曲面显示装置10整面亮度均匀性。\n\n[0076]步骤2)对均匀性性差的局部区域进行标记，定位到具体的背光分区号以及该分区需要补偿的亮度值△B，同时计算出背光的平均亮度B0。\n\n[0077]步骤3)当标记分区显示L0灰阶时，需要对该分区的背光电流进行补偿修正：若背光为直流电流模式，该分区原电流为I0，则补偿后电流为(1+△B/B)I0；若背光为PWM脉冲电流模式，该分区原脉宽为R％，则补偿后脉宽为(1+△B/B)R。\n\n[0078]按照步骤1)～步骤3)，对所有需要补偿的灰阶及分区进行批次处理，直到亮度均匀性符合，并检测的精度要求。\n\n[0079]本发明提供一种曲面显示装置10，通过采用直下式的背光结构，背光源为一MiniLED灯板103。避免了传统侧入式曲面背光，入光侧易出现亮暗不均的问题。因采用整面直下式背光的方式，不会存在局部亮暗灯影。并且MiniLED灯板103可以实现弯折，可以完全匹配曲面显示装置10的曲率。并且可以取消了扩散板105及曲面网点调试的环节，减小了开发费用，验证周期也大大缩短。最后可对背光源实施局部调光算法，对漏光的局部亮度并进行调控。\n\n[0080]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0081]以上对本发明进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10815, 23869, '技术领域\n\n[0001]本揭示涉及显示技术领域，尤其涉及一种显示面板及显示装置。\n\n背景技术\n\n[0002]现有技术的显示面板如LCD(Liquid Crystal Display，液晶显示)面板中集成了多种功能元件如指纹传感器，通常是通过在显示面板的膜层上直接迭加一层指纹传感器，浪费了显示面板的空间设计，使得显示面板的附加值低。\n\n发明内容\n\n[0003]本揭示提供一种显示面板及显示装置，通过合理利用像素之间的非显示区以提高显示面板的附加值。\n\n[0004]为解决上述问题，本揭示提供的技术方案如下：\n\n[0005]本揭示实施例提供一种显示面板，其包括多个像素单元和功能元件。每个像素单元包括子像素，子像素包括第一Micro LED芯片，在俯视视角下，相邻两个第一Micro LED芯片之间设有间隙。功能元件设置于所述间隙处。其中所述功能元件的功能与所述子像素的显示功能不同。\n\n[0006]在本揭示实施例提供的显示面板中，所述第一Micro LED芯片的长宽范围为1微米至100微米，高度范围为1微米至20微米。\n\n[0007]在本揭示实施例提供的显示面板中，所述功能元件包括生物识别单元、天线单元、储能单元、存储单元、逻辑单元或压力检测单元中的一种或几种的组合。\n\n[0008]在本揭示实施例提供的显示面板中，所述生物识别单元包括指纹识别单元，所述指纹识别单元包括指纹识别传感器，所述显示面板还包括光路元件，所述指纹识别传感器设置于所述间隙处，所述光路元件对应设置在所述指纹识别传感器的上方。\n\n[0009]在本揭示实施例提供的显示面板中，所述指纹识别传感器的面积大小范围为10平方微米至800平方微米。\n\n[0010]在本揭示实施例提供的显示面板中，所述指纹识别传感器与所述第一Micro LED芯片的间隔距离为1微米至10微米。\n\n[0011]在本揭示实施例提供的显示面板中，所述生物识别单元包括近红外光传感器和第二Micro LED芯片，其中所述第二Micro LED芯片用于发射近红外光，以给所述近红外光传感器提供光源，所述近红外光传感器和所述第二Micro LED芯片一块设置在所述间隙处。\n\n[0012]在本揭示实施例提供的显示面板中，所述功能元件包括功能不同的至少两种子功能元件。\n\n[0013]在本揭示实施例提供的显示面板中，所述至少两种子功能元件分别设置在同一个所述像素单元内的不同所述间隙处。\n\n[0014]在本揭示实施例提供的显示面板中，所述至少两种子功能元件设置在同一个所述像素单元内的同一个所述间隙处。\n\n[0015]在本揭示实施例提供的显示面板中，所述至少两种子功能元件分别设置在不同的所述像素单元内的所述间隙处。\n\n[0016]在本揭示实施例提供的显示面板中，所述至少两子功能元件包括生物识别单元和天线单元，其中所述生物识别单元设置在一行所述像素单元内的所述间隙处，所述天线单元设置在另一行所述像素单元内的所述间隙处。\n\n[0017]在本揭示实施例提供的显示面板中，所述至少两子功能元件还包括储能单元和存储单元。\n\n[0018]在本揭示实施例提供的显示面板中，所述天线单元分布在天线设置区，所述生物识别单元分布在生物识别设置区，所述储能单元分布在储能设置区，所述存储单元分布在存储设置区，其中所述天线设置区位于所述显示面板的两侧区域，所述储能设置区位于所述显示面板的上部区域，所述存储设置区位于所述显示面板的下部区域，所述生物识别设置区位于所述储能设置区和所述存储设置区之间。\n\n[0019]在本揭示实施例提供的显示面板中，所述生物识别设置区的面积占所述显示面板面积的十分之一至三分之一。\n\n[0020]本揭示实施例提供一种显示装置，其包括前述实施例其中之一的显示面板。\n\n[0021]本揭示的有益效果为：本揭示提供的显示面板及显示装置中，通过采用极小尺寸的Micro LED芯片作为基本子像素，从而在所述Micro LED子像素空间中预留一定的功能集成区，用于承接功能元件。设置功能元件一方面提高了显示面板的集成度，提升了显示面板的附加值，节省了整机空间，减薄了显示面板厚度，更利于实现全面屏，提升用户体验。\n\n附图说明\n\n[0022]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0023]图1为本揭示实施例提供的显示面板结构下视示意图；\n\n[0024]图2为本揭示实施例提供的Micro LED芯片光出射方式示意图；\n\n[0025]图3为本揭示实施例提供的显示单元集成指纹识别单元的示意图；\n\n[0026]图4为本揭示实施例提供的指纹识别传感器的PIN结构示意图；\n\n[0027]图5和图6为本揭示实施例提供的指纹识别传感器在像素单元内不同设置方式的示意图；\n\n[0028]图7为本揭示实施例提供的显示单元集成掌静脉识别单元的示意图；\n\n[0029]图8为本揭示实施例提供的近红外光传感器的驱动电路示意图；\n\n[0030]图9为本揭示实施例提供的显示单元集成天线单元的示意图；\n\n[0031]图10为本揭示实施例提供的蓝牙天线的结构示意图；\n\n[0032]图11为本揭示实施例提供的显示单元集成储能单元的示意图；\n\n[0033]图12为本揭示实施例提供的显示单元集成存储单元的示意图；\n\n[0034]图13为本揭示实施例提供的显示单元集成指纹识别单元和天线单元的示意图；\n\n[0035]图14为本揭示实施例提供的显示单元集成储能单元和存储单元的第一种示意图；\n\n[0036]图15为本揭示实施例提供的显示单元集成储能单元和存储单元的第二种示意图；\n\n[0037]图16为本揭示实施例提供的多种功能元件同时集成时的分布示意图。\n\n具体实施方式\n\n[0038]以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。\n\n[0039]在一种实施例中，提供一种显示面板100，如图1所示，其包括多个像素单元20和功能元件30。每个像素单元20包括子像素21，子像素21包括第一Micro LED芯片211，在俯视视角下，相邻两个第一Micro LED芯片211之间设有间隙。功能元件30设置于所述间隙处。其中所述功能元件30的功能与所述子像素21的显示功能不同。\n\n[0040]具体的，显示面板100还包括驱动背板10。每个像素单元20包括三个子像素21，每个子像素21包括一个第一Micro LED芯片211，第一Micro LED芯片211绑定在驱动背板10上。功能元件30设置于驱动背板10上，且功能元件30设置于相邻两个第一Micro LED芯片211之间的间隙内，也即对应设置在像素单元20内未设置第一Micro LED芯片211的区域。\n\n[0041]具体的，每个像素单元20设置有第一Micro LED芯片211的区域为显示区，未设置第一Micro LED芯片211的区域为非显示区。也即相邻第一Micro LED芯片211之间的间隙即为像素单元20的非显示区。功能元件30设置在至少部分像素单元20的非显示区。其中，功能元件30包括生物识别单元、天线单元、储能单元、存储单元、逻辑单元、及压力检测单元等功能元件中的一种或几种的组合。\n\n[0042]进一步的，每个子像素21通过第一Micro LED芯片211发光，给显示面板显示提供画素，以实现显示面板的显示功能。功能元件的功能为非显示功能，如功能元件为实现指纹识别等功能。\n\n[0043]具体的，每个像素单元20的三个第一Micro LED芯片211分别为红、绿、蓝三原色Micro LED芯片，用于显示面板的显示。当然的，每个像素单元20的三个第一Micro LED芯片211也可以为同色Micro LED芯片，并配合量子点膜或荧光粉实现显示三基色。\n\n[0044]需要说明的是，本揭示的像素单元20不限于采用RGB(红、绿、蓝)三基色显示，也可以采用RGBW(红、绿、蓝、白)等四元像素。采用RGBW四元像素时，每个像素单元包括四个Micro LED芯片。\n\n[0045]进一步的，第一Micro LED芯片211通过巨量转移等技术转移并绑定到驱动背板10上。驱动背板10包括驱动电路(图未示)，驱动电路用于驱动第一Micro LED芯片211。驱动电路可以采用包括基于非晶硅(α-Si)、低温多晶硅(Low Temperature Poly Silicon，LTPS)、铟镓锌氧化物(Indium Gallium Zinc Oxide，IGZO)等的主动阵列驱动技术或者被动阵列驱动技术实现。\n\n[0046]进一步的，第一Micro LED芯片211可以为基底面出射或者电极面出射结构，如图2所示的第一Micro LED芯片结构包括基底2111、发光层2112、电极层2113。如图2中的a示出的为电极面出射结构，如图2中的b示出的为基底面出射结构，图2中带箭头的虚线X的指向表示光的出射方向。\n\n[0047]进一步的，第一Micro LED芯片的长宽范围为1微米至100微米，高度范围为1微米至20微米。\n\n[0048]在本实施例中，在特定的像素密度下，显示面板的像素单元通过采用极小尺寸的第一Micro LED芯片作为显示单元，使像素单元有足够的非显示区域用来设置功能元件。提高了显示面板的集成度，提升了显示面板的附加值，节省了整机空间。\n\n[0049]在一种实施例中，功能元件设置为生物识别单元中的指纹识别单元。如图3所示，指纹识别单元包括指纹识别传感器(sensor)311，显示面板还包括光路元件312。指纹识别传感器311设置于相邻第一Micro LED芯片211之间的间隙，光路元件312设置于指纹识别传感器311的上方。光路元件312与指纹识别传感器311一一对应。\n\n[0050]具体的，指纹识别传感器311可以设置于部分或全部像素单元的非显示区。或者指纹识别传感器311对应设置于部分子像素或全部子像素的非显示区(子像素的非显示区是指对应子像素未设置第一Micro LED芯片的区域)。\n\n[0051]具体的，指纹识别传感器采用α-Si、LTPS、OPD(Organic Photo diode，有机材料构成的光电二级管)等PIN结构实现，如图4所示的指纹识别传感器PIN结构包括层叠设置的阴极3111、电子传输层3112、本征有源层3113、空穴传输层3114及阳极3115。\n\n[0052]进一步的，所述指纹识别传感器的面积大小范围为10平方微米至800平方微米。具体的，所述指纹识别传感器的面积大小由指纹识别传感器的光电效率、光路效率、电路效率、光强度和电路读取精度等共同决定。所述指纹识别传感器的尺寸优选能够满足生物集成需求的最小面积以降低对显示开口率的影响。\n\n[0053]进一步的，所述指纹识别传感器与所述第一Micro LED芯片的间隔距离为1微米至10微米。具体的所述指纹识别传感器与所述第一Micro LED芯片的间隔距离依赖于光路的噪声抑制效率。\n\n[0054]进一步的，指纹识别单元还包括用于驱动指纹识别传感器311的驱动电路(图未示)。指纹识别传感器311的驱动电路兼容用于驱动第一Micro LED芯片211的背板驱动电路结构。\n\n[0055]进一步的，指纹识别传感器311的驱动电路可以采用主动式或者被动式阵列驱动方式，其中主动式利用光生电流产生的电压对生物信号进行光生电压放大，通常采用3T(薄膜晶体管)或者4T驱动架构。被动式驱动直接利用指纹识别传感器产生的光生电流在一定时间内的积分作为生物识别信号，通常采用1T或者2T驱动架构。\n\n[0056]进一步的，采用准直孔、微透镜(micro lens)等光学原理实现光路元件312与指纹识别传感器311的一一对应。\n\n[0057]进一步的，第一Micro LED芯片211发射的光线经过指纹脊谷反射，形成不同的反射光并经过光路元件312被指纹识别传感器311识别并形成不同的明暗成像。\n\n[0058]进一步的，指纹识别传感器311及其驱动电路通常为不透光结构，为减少对子像素显示的影响，指纹识别传感器311设置于子像素行信号之间，即设置于相邻的两行子像素之间的间隙内。如图5所示，指纹识别传感器311设置在相邻的两行第一Micro LED芯片211之间的间隙内。当然的，显示面板也可以采用RGBW等四元像素方式在实现穿透率提升的同时，采用指纹识别传感器311与W像素共享像素开口区域的方式，如图6所示。\n\n[0059]在本实施例中，把指纹识别单元集成在像素单元的非显示区，在实现全面屏，提升显示面板集成度的同时，减薄了显示面板的厚度，提升了显示面板的附加值，同时可以实现整面的指纹识别，提升用户的体验。\n\n[0060]在一种实施例中，功能元件设置为生物识别单元中的掌静脉识别单元。如图7所示，生物识别单元包括近红外光传感器313和第二Micro LED芯片212。第二Micro LED芯片212用于发射近红外光，以给近红外光传感器提供光源。第二Micro LED芯片212和近红外光传感器313一起设置在相邻第一Micro LED芯片211之间的间隙内，且第二Micro LED芯片212也绑定在驱动背板10上。进一步的，近红外光传感器313和近红外光传感器313一起设置设置在像素单元20内的非显示区，且近红外光传感器313设置在未设置第二Micro LED芯片212和第一Micro LED芯片211的区域。具体的对应设置在设置有第二Micro LED芯片212的像素单元20内。\n\n[0061]具体的，第二Micro LED芯片212的大小(size)小于第一Micro LED芯片211的大小(size)。\n\n[0062]具体的，第二Micro LED芯片212的大小(size)是第一Micro LED芯片211的大小(size)的二分之一或三分之一或者更小。需要说明的是，第二Micro LED芯片212的大小(size)不限于此，第二Micro LED芯片212的大小(size)可以根据近红外光传感器313的光电效率及近红外Micro LED的光强等参数来设定。\n\n[0063]进一步的，如图8所示，近红外光传感器的电路结构包括近红外光生电流二极管(photo diode)PD、薄膜晶体管T1、及储存电容C。\n\n[0064]具体的，存储电容C用于存储积累近红外光生电流二极管PD曝光产生的电流，薄膜晶体管T1用于控制曝光前存储电容C的清零和曝光后数据的读取。当然的，图8中的栅极(Gate)线需连接到显示区外的时序控制扫描电路，读出电路readout需连接到显示区外的模拟前端(Analog Front End，AFE)电路进行积分及滤波等处理。\n\n[0065]进一步的，近红外光传感器313的驱动方式可以是如图8示出的被动式阵列驱动方式，也可以采用驱动能力更强的主动式阵列驱动方式。\n\n[0066]可以理解的是，为减少对子像素显示的影响，近红外光传感器的排布方式可以参考上述实施例中指纹识别传感器的排布方式，在此不再赘述。\n\n[0067]在本实施例中，把掌静脉识别单元设置在像素单元的非显示区，无需搭配额外的近红外灯照射装置，无需搭配光学镜头，无需搭配额外的传感器，即可实现掌静脉的安全识别，提高了显示面板的集成度，提升了显示面板的附加值，且丰富了显示器的功能。\n\n[0068]需要说明的是，本揭示的生物识别单元不限于指纹识别和掌静脉识别，还包括摄像头、掌纹识别、虹膜识别等。其中生物识别单元作为环境光检测或者摄像头作用时，传感器可以设置为识别可见光波段。作为指纹、掌纹检测时，传感器可以设置为识别可见光波段或者近红外光波段，如850纳米或者940纳米等。作为环境紫外光检测时，传感器可以设置为识别小于380纳米的紫外光波段。\n\n[0069]在一种实施例中，功能元件设置为天线单元。天线单元设置在像素单元的非显示区。如图9所示，天线单元32设置在未设置第一Micro LED芯片211的区域，也即设置于相邻两个第一Micro LED芯片211之间的间隙处。天线单元32可以为通讯天线，如2G/3G/4G/5G通讯天线等、NFC天线、蓝牙天线、WIFI天线等天线中的一种或上述多种天线的集合。天线单元32可以通过整面的天线布置实现大面积阵列结构，阵列天线单元32与外围射频前端、收发器及基带芯片共同构成了基本通信单元。其中射频前端包括射频开关、射频信号放大、滤波器及双工器等传统结构。\n\n[0070]具体的，以通讯天线为例，通讯天线可以采用共面波导(slot-loop)、狭缝式(slot)、偶极天线(dipole antenna)等架构。\n\n[0071]具体的，以蓝牙天线为例，蓝牙天线可以设计为典型的倒F型或曲流型天线。如图10所示蓝牙天线结构均包括天线TL和地线GND，其中图10中的a为典型的倒F型天线，图10中的b为曲流型天线。典型的倒F型天线和曲流型天线均为绝缘体表面的金属天线结构。\n\n[0072]进一步的，在基板叠层结构上设计天线单元时，为规避天线单元与显示像素单元间的讯号干扰，天线单元需与子像素及其驱动电路做避让设计，并且依据电磁信号干扰规范设置安全间距。\n\n[0073]在本实施例中，把天线单元设置在像素单元的非显示区，提高了显示面板的集成度，提升了显示面板的附加值。同时传统天线设置于显示屏后端容易受到显示屏显示及触控等驱动走线的电磁屏蔽干扰，本揭示的显示单元与天线单元采用共面结构可以改善大容量通信时代多天线共存所造成的信号屏蔽难题。\n\n[0074]在一种实施例中，功能元件设置为储能单元，储能单元设置在像素单元的非显示区。具体的，如图11所示，储能单元33设置在未设置第一Micro LED芯片211的区域，也即设置于相邻两个第一Micro LED芯片211之间的间隙处。储能单元33可以为电容式储能单元等。\n\n[0075]具体的，电容式储能单元包括电极板及设置于电极板之间的介电层。其中电极板可以为单层或者多层形成的平板电容结构。介电层的材料包括氮化硅(SiNx)、氧化硅(SiOx)等无机材料或陶瓷材料钛酸钡、钛酸锶等或者金属钽等。\n\n[0076]进一步的，电容式储能单元33通过对应的电路与外围充电电路连接，在像素单元通电显示状态下同步进行充电，当断电后可以通过电荷转换单元331反向给像素单元内不同的子像素供电，使第一Micro LED芯片211正常工作，从而充当一定功能的储能电池用途，提升显示系统的续航能力。\n\n[0077]进一步的，为提升电容式储能单元储能电容的大小，并避免电容讯号对子像素驱动电路的影响，电容式储能单元设置于子像素及其驱动电路以外的区域。且储能电容的形状可以为任意异形形貌以最大化储能电容的大小。\n\n[0078]在本实施例中，把储能单元设置在像素单元的非显示区，提高了显示面板的集成度，提升了显示面板的附加值。同时设置储能单元能够提升显示系统的续航能力。\n\n[0079]在一种实施例中，功能元件设置为存储单元，存储单元设置在像素单元的非显示区。如图12所示，存储单元34设置在未设置第一Micro LED芯片211的区域，也即设置于相邻两个第一Micro LED芯片211之间的间隙处。\n\n[0080]具体的，存储单元34与外围数位输入电路互联，数位输入电路通过行列扫描线给不同子像素或像素单元中的存储单元输入数位存储信号。数位存储信号通过DAC转换电路341及其他辅助电路给当前子像素或像素单元发出指令执行电讯号。从而实现单一的存储单元34控制单一的子像素或像素单元的功能，使仅在当前显示像素需要刷新时才需要额外讯号与功耗对特定的子像素或像素单元输入更新讯号。\n\n[0081]在本实施例中，把存储单元设置在像素单元的非显示区，提高了显示面板的集成度，提升了显示面板的附加值。同时设置存储单元有利于降低整体的逻辑功耗，同时可以简化数位输入电路的复杂度，实现成本降低与集成度提升的效果。\n\n[0082]需要说明的是，上述实施例中的指纹识别单元、掌静脉识别单元、天线单元、储能单元、及存储单元，示例性的示出了部分功能元件在显示面板内的集成方式，但本揭示不限于此。而且指纹识别单元、掌静脉识别单元、天线单元、储能单元、及存储单元均可以设置在多个像素单元或多个子像素内，但本揭示也不限把一种功能元件集成在显示面板上。本揭示也可以把多种功能元件同时集成在显示面板上。\n\n[0083]在一种实施例中，所述功能元件包括功能不同的至少两种子功能元件。所述至少两子功能元件分别设置在不同的所述像素单元内的所述间隙处。所述至少两子功能元件包括生物识别单元和天线单元。\n\n[0084]具体的，如图13所示，指纹识别单元的指纹传感器311设置在一行像素单元20的非显示区，天线单元32设置在另一行像素单元20’的非显示区。\n\n[0085]进一步的，为减少指纹识别传感器及天线单元对子像素显示的影响，指纹识别传感器及天线单元与子像素的驱动电路均采用避让设计。\n\n[0086]在一种实施例中，与上述实施例不同的是，所述至少两子功能元件分别设置在同一个所述像素单元内的不同所述间隙处。且所述至少两子功能元件包括储能单元和存储单元。\n\n[0087]具体的，如图14所示，储能单元33和存储单元34设置在同一像素单元20的非显示区，也即相邻的两行第一Micro LED芯片211之间的间隙处。具体的，储能单元33和存储单元34设置于部分或全部像素单元20未设置第一Micro LED芯片211的区域，且储能单元33和存储单元34彼此间隔设置。\n\n[0088]在一种实施例中，与上述实施例不同的是，所述至少两子功能元件设置在同一个所述像素单元内的同一个所述间隙处。且所述至少两子功能元件包括储能单元和存储单元\n\n[0089]具体的，如图15所示，储能单元33和存储单元34设置在同一个所述像素单元20内的同一个所述间隙处。也即设置于同一子像素21的非显示区。进一步的，储能单元33和存储单元34一块设置在相邻的两个第一Micro LED芯片之间的间隙处。\n\n[0090]具体的，每个像素单元20包括三个子像素21，每个子像素21包括一个第一MicroLED芯片211。储能单元33和存储单元34设置在部分或全部子像素21内未设置第一MicroLED芯片211的区域。\n\n[0091]需要说明的是，上述实施例示例性的示出了部分功能元件在显示面板内的集成组合，但本揭示不限于此，本揭示也可以为其他功能元件的组合或更多种功能元件的组合。\n\n[0092]在一种实施例中，所述至少两子功能元件包括生物识别单元、天线单元、储能单元、及存储单元。所述生物识别单元、所述天线单元、所述储能单元、所述存储单元同时集成在不同的相邻第一Micro LED芯片之间的间隔内。如图16所示，所述天线单元设置于天线设置区1011，天线设置区1011分布于显示面板101的左右侧和上侧，从而能够实现最小化减少显示开口区与全向射频信号覆盖。所述储能单元设置于储能设置区1012，储能设置区1012分布于所述显示面板101的上部区域。所述存储单元设置于存储设置区1014，存储设置区1014分布于靠近所述显示面板101下边框位置的空间，使得所述存储单元的转换电路信号能够以最短的路径与下边框处FPC或者COF中IC信号进行电性连接，达成降低走线阻抗的目的。生物识别单元以指纹识别单元为例说明，所述指纹识别单元设置于指纹识别设置区1013，指纹识别设置区1013位于所述储能设置区1012和所述存储设置区1014之间的区域，如指纹识别设置区1013可以占整个显示面板101面积的十分之一至三分之一。例如可以为四分之一，匹配于手指识别区的常见位置与大面积识别需求。其中，储能设置区1012可以占据显示面板101较大的区域，以实现最大化储能面积的需求。\n\n[0093]具体的，当显示面板内集成多种功能元件时，为了保证对应不同集成功能元件区的显示像素出现明显的分界mura，需保证不同区域的子像素具有相同的形状大小或者亮度。也即不同区域的子像素大小取决于最影响开口率的功能元件的大小。即使部分区域未设置功能元件，该区域也需要设置与集成有功能元件区相同大小的子像素。\n\n[0094]在一种实施例中，提供一种显示装置，其包括上述实施例其中之一的显示面板。\n\n[0095]根据上述实施例可知：\n\n[0096]本揭示提供一种显示面板及显示装置，显示面板包括驱动背板、绑定在驱动背板上的Micro LED芯片以及功能元件。功能元件设置于相邻两个第一Micro LED芯片之间的间隙处。通过采用极小尺寸的Micro LED芯片作为基本子像素，从而在Micro LED子像素空间中预留一定的功能集成区，用于承接功能元件。功能元件包括通讯天线、生物识别、储能电池、存储单元、逻辑电路、摄像头、压力检测等发射与传感单元。功能元件一方面提高了显示面板的集成度，提升了显示面板的附加值，节省了整机空间，减薄了显示面板厚度，更利于实现全面屏，提升用户体验。而且功能元件充分利用了显示面板的空间，其容纳空间随着模块化显示面积的增加而增加，因而能够适应显示需求做适应性调整。同时充分利用显示面板充足的空间，有利于克服传统硅半导体工艺集成度过高所造成的适用逻辑电路而不适用模拟电路的局限性，使得显示面板与传统半导体IC各自发挥空间与集成度的优势，达到优势互补效果。\n\n[0097]综上所述，虽然本揭示已以优选实施例揭露如上，但上述优选实施例并非用以限制本揭示，本领域的普通技术人员，在不脱离本揭示的精神和范围内，均可作各种更动与润饰，因此本揭示的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本揭示涉及显示技术领域，尤其涉及一种显示面板及显示装置。\n\n背景技术\n\n[0002]现有技术的显示面板如LCD(Liquid Crystal Display，液晶显示)面板中集成了多种功能元件如指纹传感器，通常是通过在显示面板的膜层上直接迭加一层指纹传感器，浪费了显示面板的空间设计，使得显示面板的附加值低。\n\n发明内容\n\n[0003]本揭示提供一种显示面板及显示装置，通过合理利用像素之间的非显示区以提高显示面板的附加值。\n\n[0004]为解决上述问题，本揭示提供的技术方案如下：\n\n[0005]本揭示实施例提供一种显示面板，其包括多个像素单元和功能元件。每个像素单元包括子像素，子像素包括第一Micro LED芯片，在俯视视角下，相邻两个第一Micro LED芯片之间设有间隙。功能元件设置于所述间隙处。其中所述功能元件的功能与所述子像素的显示功能不同。\n\n[0006]在本揭示实施例提供的显示面板中，所述第一Micro LED芯片的长宽范围为1微米至100微米，高度范围为1微米至20微米。\n\n[0007]在本揭示实施例提供的显示面板中，所述功能元件包括生物识别单元、天线单元、储能单元、存储单元、逻辑单元或压力检测单元中的一种或几种的组合。\n\n[0008]在本揭示实施例提供的显示面板中，所述生物识别单元包括指纹识别单元，所述指纹识别单元包括指纹识别传感器，所述显示面板还包括光路元件，所述指纹识别传感器设置于所述间隙处，所述光路元件对应设置在所述指纹识别传感器的上方。\n\n[0009]在本揭示实施例提供的显示面板中，所述指纹识别传感器的面积大小范围为10平方微米至800平方微米。\n\n[0010]在本揭示实施例提供的显示面板中，所述指纹识别传感器与所述第一Micro LED芯片的间隔距离为1微米至10微米。\n\n[0011]在本揭示实施例提供的显示面板中，所述生物识别单元包括近红外光传感器和第二Micro LED芯片，其中所述第二Micro LED芯片用于发射近红外光，以给所述近红外光传感器提供光源，所述近红外光传感器和所述第二Micro LED芯片一块设置在所述间隙处。\n\n[0012]在本揭示实施例提供的显示面板中，所述功能元件包括功能不同的至少两种子功能元件。\n\n[0013]在本揭示实施例提供的显示面板中，所述至少两种子功能元件分别设置在同一个所述像素单元内的不同所述间隙处。\n\n[0014]在本揭示实施例提供的显示面板中，所述至少两种子功能元件设置在同一个所述像素单元内的同一个所述间隙处。\n\n[0015]在本揭示实施例提供的显示面板中，所述至少两种子功能元件分别设置在不同的所述像素单元内的所述间隙处。\n\n[0016]在本揭示实施例提供的显示面板中，所述至少两子功能元件包括生物识别单元和天线单元，其中所述生物识别单元设置在一行所述像素单元内的所述间隙处，所述天线单元设置在另一行所述像素单元内的所述间隙处。\n\n[0017]在本揭示实施例提供的显示面板中，所述至少两子功能元件还包括储能单元和存储单元。\n\n[0018]在本揭示实施例提供的显示面板中，所述天线单元分布在天线设置区，所述生物识别单元分布在生物识别设置区，所述储能单元分布在储能设置区，所述存储单元分布在存储设置区，其中所述天线设置区位于所述显示面板的两侧区域，所述储能设置区位于所述显示面板的上部区域，所述存储设置区位于所述显示面板的下部区域，所述生物识别设置区位于所述储能设置区和所述存储设置区之间。\n\n[0019]在本揭示实施例提供的显示面板中，所述生物识别设置区的面积占所述显示面板面积的十分之一至三分之一。\n\n[0020]本揭示实施例提供一种显示装置，其包括前述实施例其中之一的显示面板。\n\n[0021]本揭示的有益效果为：本揭示提供的显示面板及显示装置中，通过采用极小尺寸的Micro LED芯片作为基本子像素，从而在所述Micro LED子像素空间中预留一定的功能集成区，用于承接功能元件。设置功能元件一方面提高了显示面板的集成度，提升了显示面板的附加值，节省了整机空间，减薄了显示面板厚度，更利于实现全面屏，提升用户体验。\n\n附图说明\n\n[0022]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0023]图1为本揭示实施例提供的显示面板结构下视示意图；\n\n[0024]图2为本揭示实施例提供的Micro LED芯片光出射方式示意图；\n\n[0025]图3为本揭示实施例提供的显示单元集成指纹识别单元的示意图；\n\n[0026]图4为本揭示实施例提供的指纹识别传感器的PIN结构示意图；\n\n[0027]图5和图6为本揭示实施例提供的指纹识别传感器在像素单元内不同设置方式的示意图；\n\n[0028]图7为本揭示实施例提供的显示单元集成掌静脉识别单元的示意图；\n\n[0029]图8为本揭示实施例提供的近红外光传感器的驱动电路示意图；\n\n[0030]图9为本揭示实施例提供的显示单元集成天线单元的示意图；\n\n[0031]图10为本揭示实施例提供的蓝牙天线的结构示意图；\n\n[0032]图11为本揭示实施例提供的显示单元集成储能单元的示意图；\n\n[0033]图12为本揭示实施例提供的显示单元集成存储单元的示意图；\n\n[0034]图13为本揭示实施例提供的显示单元集成指纹识别单元和天线单元的示意图；\n\n[0035]图14为本揭示实施例提供的显示单元集成储能单元和存储单元的第一种示意图；\n\n[0036]图15为本揭示实施例提供的显示单元集成储能单元和存储单元的第二种示意图；\n\n[0037]图16为本揭示实施例提供的多种功能元件同时集成时的分布示意图。\n\n具体实施方式\n\n[0038]以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。\n\n[0039]在一种实施例中，提供一种显示面板100，如图1所示，其包括多个像素单元20和功能元件30。每个像素单元20包括子像素21，子像素21包括第一Micro LED芯片211，在俯视视角下，相邻两个第一Micro LED芯片211之间设有间隙。功能元件30设置于所述间隙处。其中所述功能元件30的功能与所述子像素21的显示功能不同。\n\n[0040]具体的，显示面板100还包括驱动背板10。每个像素单元20包括三个子像素21，每个子像素21包括一个第一Micro LED芯片211，第一Micro LED芯片211绑定在驱动背板10上。功能元件30设置于驱动背板10上，且功能元件30设置于相邻两个第一Micro LED芯片211之间的间隙内，也即对应设置在像素单元20内未设置第一Micro LED芯片211的区域。\n\n[0041]具体的，每个像素单元20设置有第一Micro LED芯片211的区域为显示区，未设置第一Micro LED芯片211的区域为非显示区。也即相邻第一Micro LED芯片211之间的间隙即为像素单元20的非显示区。功能元件30设置在至少部分像素单元20的非显示区。其中，功能元件30包括生物识别单元、天线单元、储能单元、存储单元、逻辑单元、及压力检测单元等功能元件中的一种或几种的组合。\n\n[0042]进一步的，每个子像素21通过第一Micro LED芯片211发光，给显示面板显示提供画素，以实现显示面板的显示功能。功能元件的功能为非显示功能，如功能元件为实现指纹识别等功能。\n\n[0043]具体的，每个像素单元20的三个第一Micro LED芯片211分别为红、绿、蓝三原色Micro LED芯片，用于显示面板的显示。当然的，每个像素单元20的三个第一Micro LED芯片211也可以为同色Micro LED芯片，并配合量子点膜或荧光粉实现显示三基色。\n\n[0044]需要说明的是，本揭示的像素单元20不限于采用RGB(红、绿、蓝)三基色显示，也可以采用RGBW(红、绿、蓝、白)等四元像素。采用RGBW四元像素时，每个像素单元包括四个Micro LED芯片。\n\n[0045]进一步的，第一Micro LED芯片211通过巨量转移等技术转移并绑定到驱动背板10上。驱动背板10包括驱动电路(图未示)，驱动电路用于驱动第一Micro LED芯片211。驱动电路可以采用包括基于非晶硅(α-Si)、低温多晶硅(Low Temperature Poly Silicon，LTPS)、铟镓锌氧化物(Indium Gallium Zinc Oxide，IGZO)等的主动阵列驱动技术或者被动阵列驱动技术实现。\n\n[0046]进一步的，第一Micro LED芯片211可以为基底面出射或者电极面出射结构，如图2所示的第一Micro LED芯片结构包括基底2111、发光层2112、电极层2113。如图2中的a示出的为电极面出射结构，如图2中的b示出的为基底面出射结构，图2中带箭头的虚线X的指向表示光的出射方向。\n\n[0047]进一步的，第一Micro LED芯片的长宽范围为1微米至100微米，高度范围为1微米至20微米。\n\n[0048]在本实施例中，在特定的像素密度下，显示面板的像素单元通过采用极小尺寸的第一Micro LED芯片作为显示单元，使像素单元有足够的非显示区域用来设置功能元件。提高了显示面板的集成度，提升了显示面板的附加值，节省了整机空间。\n\n[0049]在一种实施例中，功能元件设置为生物识别单元中的指纹识别单元。如图3所示，指纹识别单元包括指纹识别传感器(sensor)311，显示面板还包括光路元件312。指纹识别传感器311设置于相邻第一Micro LED芯片211之间的间隙，光路元件312设置于指纹识别传感器311的上方。光路元件312与指纹识别传感器311一一对应。\n\n[0050]具体的，指纹识别传感器311可以设置于部分或全部像素单元的非显示区。或者指纹识别传感器311对应设置于部分子像素或全部子像素的非显示区(子像素的非显示区是指对应子像素未设置第一Micro LED芯片的区域)。\n\n[0051]具体的，指纹识别传感器采用α-Si、LTPS、OPD(Organic Photo diode，有机材料构成的光电二级管)等PIN结构实现，如图4所示的指纹识别传感器PIN结构包括层叠设置的阴极3111、电子传输层3112、本征有源层3113、空穴传输层3114及阳极3115。\n\n[0052]进一步的，所述指纹识别传感器的面积大小范围为10平方微米至800平方微米。具体的，所述指纹识别传感器的面积大小由指纹识别传感器的光电效率、光路效率、电路效率、光强度和电路读取精度等共同决定。所述指纹识别传感器的尺寸优选能够满足生物集成需求的最小面积以降低对显示开口率的影响。\n\n[0053]进一步的，所述指纹识别传感器与所述第一Micro LED芯片的间隔距离为1微米至10微米。具体的所述指纹识别传感器与所述第一Micro LED芯片的间隔距离依赖于光路的噪声抑制效率。\n\n[0054]进一步的，指纹识别单元还包括用于驱动指纹识别传感器311的驱动电路(图未示)。指纹识别传感器311的驱动电路兼容用于驱动第一Micro LED芯片211的背板驱动电路结构。\n\n[0055]进一步的，指纹识别传感器311的驱动电路可以采用主动式或者被动式阵列驱动方式，其中主动式利用光生电流产生的电压对生物信号进行光生电压放大，通常采用3T(薄膜晶体管)或者4T驱动架构。被动式驱动直接利用指纹识别传感器产生的光生电流在一定时间内的积分作为生物识别信号，通常采用1T或者2T驱动架构。\n\n[0056]进一步的，采用准直孔、微透镜(micro lens)等光学原理实现光路元件312与指纹识别传感器311的一一对应。\n\n[0057]进一步的，第一Micro LED芯片211发射的光线经过指纹脊谷反射，形成不同的反射光并经过光路元件312被指纹识别传感器311识别并形成不同的明暗成像。\n\n[0058]进一步的，指纹识别传感器311及其驱动电路通常为不透光结构，为减少对子像素显示的影响，指纹识别传感器311设置于子像素行信号之间，即设置于相邻的两行子像素之间的间隙内。如图5所示，指纹识别传感器311设置在相邻的两行第一Micro LED芯片211之间的间隙内。当然的，显示面板也可以采用RGBW等四元像素方式在实现穿透率提升的同时，采用指纹识别传感器311与W像素共享像素开口区域的方式，如图6所示。\n\n[0059]在本实施例中，把指纹识别单元集成在像素单元的非显示区，在实现全面屏，提升显示面板集成度的同时，减薄了显示面板的厚度，提升了显示面板的附加值，同时可以实现整面的指纹识别，提升用户的体验。\n\n[0060]在一种实施例中，功能元件设置为生物识别单元中的掌静脉识别单元。如图7所示，生物识别单元包括近红外光传感器313和第二Micro LED芯片212。第二Micro LED芯片212用于发射近红外光，以给近红外光传感器提供光源。第二Micro LED芯片212和近红外光传感器313一起设置在相邻第一Micro LED芯片211之间的间隙内，且第二Micro LED芯片212也绑定在驱动背板10上。进一步的，近红外光传感器313和近红外光传感器313一起设置设置在像素单元20内的非显示区，且近红外光传感器313设置在未设置第二Micro LED芯片212和第一Micro LED芯片211的区域。具体的对应设置在设置有第二Micro LED芯片212的像素单元20内。\n\n[0061]具体的，第二Micro LED芯片212的大小(size)小于第一Micro LED芯片211的大小(size)。\n\n[0062]具体的，第二Micro LED芯片212的大小(size)是第一Micro LED芯片211的大小(size)的二分之一或三分之一或者更小。需要说明的是，第二Micro LED芯片212的大小(size)不限于此，第二Micro LED芯片212的大小(size)可以根据近红外光传感器313的光电效率及近红外Micro LED的光强等参数来设定。\n\n[0063]进一步的，如图8所示，近红外光传感器的电路结构包括近红外光生电流二极管(photo diode)PD、薄膜晶体管T1、及储存电容C。\n\n[0064]具体的，存储电容C用于存储积累近红外光生电流二极管PD曝光产生的电流，薄膜晶体管T1用于控制曝光前存储电容C的清零和曝光后数据的读取。当然的，图8中的栅极(Gate)线需连接到显示区外的时序控制扫描电路，读出电路readout需连接到显示区外的模拟前端(Analog Front End，AFE)电路进行积分及滤波等处理。\n\n[0065]进一步的，近红外光传感器313的驱动方式可以是如图8示出的被动式阵列驱动方式，也可以采用驱动能力更强的主动式阵列驱动方式。\n\n[0066]可以理解的是，为减少对子像素显示的影响，近红外光传感器的排布方式可以参考上述实施例中指纹识别传感器的排布方式，在此不再赘述。\n\n[0067]在本实施例中，把掌静脉识别单元设置在像素单元的非显示区，无需搭配额外的近红外灯照射装置，无需搭配光学镜头，无需搭配额外的传感器，即可实现掌静脉的安全识别，提高了显示面板的集成度，提升了显示面板的附加值，且丰富了显示器的功能。\n\n[0068]需要说明的是，本揭示的生物识别单元不限于指纹识别和掌静脉识别，还包括摄像头、掌纹识别、虹膜识别等。其中生物识别单元作为环境光检测或者摄像头作用时，传感器可以设置为识别可见光波段。作为指纹、掌纹检测时，传感器可以设置为识别可见光波段或者近红外光波段，如850纳米或者940纳米等。作为环境紫外光检测时，传感器可以设置为识别小于380纳米的紫外光波段。\n\n[0069]在一种实施例中，功能元件设置为天线单元。天线单元设置在像素单元的非显示区。如图9所示，天线单元32设置在未设置第一Micro LED芯片211的区域，也即设置于相邻两个第一Micro LED芯片211之间的间隙处。天线单元32可以为通讯天线，如2G/3G/4G/5G通讯天线等、NFC天线、蓝牙天线、WIFI天线等天线中的一种或上述多种天线的集合。天线单元32可以通过整面的天线布置实现大面积阵列结构，阵列天线单元32与外围射频前端、收发器及基带芯片共同构成了基本通信单元。其中射频前端包括射频开关、射频信号放大、滤波器及双工器等传统结构。\n\n[0070]具体的，以通讯天线为例，通讯天线可以采用共面波导(slot-loop)、狭缝式(slot)、偶极天线(dipole antenna)等架构。\n\n[0071]具体的，以蓝牙天线为例，蓝牙天线可以设计为典型的倒F型或曲流型天线。如图10所示蓝牙天线结构均包括天线TL和地线GND，其中图10中的a为典型的倒F型天线，图10中的b为曲流型天线。典型的倒F型天线和曲流型天线均为绝缘体表面的金属天线结构。\n\n[0072]进一步的，在基板叠层结构上设计天线单元时，为规避天线单元与显示像素单元间的讯号干扰，天线单元需与子像素及其驱动电路做避让设计，并且依据电磁信号干扰规范设置安全间距。\n\n[0073]在本实施例中，把天线单元设置在像素单元的非显示区，提高了显示面板的集成度，提升了显示面板的附加值。同时传统天线设置于显示屏后端容易受到显示屏显示及触控等驱动走线的电磁屏蔽干扰，本揭示的显示单元与天线单元采用共面结构可以改善大容量通信时代多天线共存所造成的信号屏蔽难题。\n\n[0074]在一种实施例中，功能元件设置为储能单元，储能单元设置在像素单元的非显示区。具体的，如图11所示，储能单元33设置在未设置第一Micro LED芯片211的区域，也即设置于相邻两个第一Micro LED芯片211之间的间隙处。储能单元33可以为电容式储能单元等。\n\n[0075]具体的，电容式储能单元包括电极板及设置于电极板之间的介电层。其中电极板可以为单层或者多层形成的平板电容结构。介电层的材料包括氮化硅(SiNx)、氧化硅(SiOx)等无机材料或陶瓷材料钛酸钡、钛酸锶等或者金属钽等。\n\n[0076]进一步的，电容式储能单元33通过对应的电路与外围充电电路连接，在像素单元通电显示状态下同步进行充电，当断电后可以通过电荷转换单元331反向给像素单元内不同的子像素供电，使第一Micro LED芯片211正常工作，从而充当一定功能的储能电池用途，提升显示系统的续航能力。\n\n[0077]进一步的，为提升电容式储能单元储能电容的大小，并避免电容讯号对子像素驱动电路的影响，电容式储能单元设置于子像素及其驱动电路以外的区域。且储能电容的形状可以为任意异形形貌以最大化储能电容的大小。\n\n[0078]在本实施例中，把储能单元设置在像素单元的非显示区，提高了显示面板的集成度，提升了显示面板的附加值。同时设置储能单元能够提升显示系统的续航能力。\n\n[0079]在一种实施例中，功能元件设置为存储单元，存储单元设置在像素单元的非显示区。如图12所示，存储单元34设置在未设置第一Micro LED芯片211的区域，也即设置于相邻两个第一Micro LED芯片211之间的间隙处。\n\n[0080]具体的，存储单元34与外围数位输入电路互联，数位输入电路通过行列扫描线给不同子像素或像素单元中的存储单元输入数位存储信号。数位存储信号通过DAC转换电路341及其他辅助电路给当前子像素或像素单元发出指令执行电讯号。从而实现单一的存储单元34控制单一的子像素或像素单元的功能，使仅在当前显示像素需要刷新时才需要额外讯号与功耗对特定的子像素或像素单元输入更新讯号。\n\n[0081]在本实施例中，把存储单元设置在像素单元的非显示区，提高了显示面板的集成度，提升了显示面板的附加值。同时设置存储单元有利于降低整体的逻辑功耗，同时可以简化数位输入电路的复杂度，实现成本降低与集成度提升的效果。\n\n[0082]需要说明的是，上述实施例中的指纹识别单元、掌静脉识别单元、天线单元、储能单元、及存储单元，示例性的示出了部分功能元件在显示面板内的集成方式，但本揭示不限于此。而且指纹识别单元、掌静脉识别单元、天线单元、储能单元、及存储单元均可以设置在多个像素单元或多个子像素内，但本揭示也不限把一种功能元件集成在显示面板上。本揭示也可以把多种功能元件同时集成在显示面板上。\n\n[0083]在一种实施例中，所述功能元件包括功能不同的至少两种子功能元件。所述至少两子功能元件分别设置在不同的所述像素单元内的所述间隙处。所述至少两子功能元件包括生物识别单元和天线单元。\n\n[0084]具体的，如图13所示，指纹识别单元的指纹传感器311设置在一行像素单元20的非显示区，天线单元32设置在另一行像素单元20’的非显示区。\n\n[0085]进一步的，为减少指纹识别传感器及天线单元对子像素显示的影响，指纹识别传感器及天线单元与子像素的驱动电路均采用避让设计。\n\n[0086]在一种实施例中，与上述实施例不同的是，所述至少两子功能元件分别设置在同一个所述像素单元内的不同所述间隙处。且所述至少两子功能元件包括储能单元和存储单元。\n\n[0087]具体的，如图14所示，储能单元33和存储单元34设置在同一像素单元20的非显示区，也即相邻的两行第一Micro LED芯片211之间的间隙处。具体的，储能单元33和存储单元34设置于部分或全部像素单元20未设置第一Micro LED芯片211的区域，且储能单元33和存储单元34彼此间隔设置。\n\n[0088]在一种实施例中，与上述实施例不同的是，所述至少两子功能元件设置在同一个所述像素单元内的同一个所述间隙处。且所述至少两子功能元件包括储能单元和存储单元\n\n[0089]具体的，如图15所示，储能单元33和存储单元34设置在同一个所述像素单元20内的同一个所述间隙处。也即设置于同一子像素21的非显示区。进一步的，储能单元33和存储单元34一块设置在相邻的两个第一Micro LED芯片之间的间隙处。\n\n[0090]具体的，每个像素单元20包括三个子像素21，每个子像素21包括一个第一MicroLED芯片211。储能单元33和存储单元34设置在部分或全部子像素21内未设置第一MicroLED芯片211的区域。\n\n[0091]需要说明的是，上述实施例示例性的示出了部分功能元件在显示面板内的集成组合，但本揭示不限于此，本揭示也可以为其他功能元件的组合或更多种功能元件的组合。\n\n[0092]在一种实施例中，所述至少两子功能元件包括生物识别单元、天线单元、储能单元、及存储单元。所述生物识别单元、所述天线单元、所述储能单元、所述存储单元同时集成在不同的相邻第一Micro LED芯片之间的间隔内。如图16所示，所述天线单元设置于天线设置区1011，天线设置区1011分布于显示面板101的左右侧和上侧，从而能够实现最小化减少显示开口区与全向射频信号覆盖。所述储能单元设置于储能设置区1012，储能设置区1012分布于所述显示面板101的上部区域。所述存储单元设置于存储设置区1014，存储设置区1014分布于靠近所述显示面板101下边框位置的空间，使得所述存储单元的转换电路信号能够以最短的路径与下边框处FPC或者COF中IC信号进行电性连接，达成降低走线阻抗的目的。生物识别单元以指纹识别单元为例说明，所述指纹识别单元设置于指纹识别设置区1013，指纹识别设置区1013位于所述储能设置区1012和所述存储设置区1014之间的区域，如指纹识别设置区1013可以占整个显示面板101面积的十分之一至三分之一。例如可以为四分之一，匹配于手指识别区的常见位置与大面积识别需求。其中，储能设置区1012可以占据显示面板101较大的区域，以实现最大化储能面积的需求。\n\n[0093]具体的，当显示面板内集成多种功能元件时，为了保证对应不同集成功能元件区的显示像素出现明显的分界mura，需保证不同区域的子像素具有相同的形状大小或者亮度。也即不同区域的子像素大小取决于最影响开口率的功能元件的大小。即使部分区域未设置功能元件，该区域也需要设置与集成有功能元件区相同大小的子像素。\n\n[0094]在一种实施例中，提供一种显示装置，其包括上述实施例其中之一的显示面板。\n\n[0095]根据上述实施例可知：\n\n[0096]本揭示提供一种显示面板及显示装置，显示面板包括驱动背板、绑定在驱动背板上的Micro LED芯片以及功能元件。功能元件设置于相邻两个第一Micro LED芯片之间的间隙处。通过采用极小尺寸的Micro LED芯片作为基本子像素，从而在Micro LED子像素空间中预留一定的功能集成区，用于承接功能元件。功能元件包括通讯天线、生物识别、储能电池、存储单元、逻辑电路、摄像头、压力检测等发射与传感单元。功能元件一方面提高了显示面板的集成度，提升了显示面板的附加值，节省了整机空间，减薄了显示面板厚度，更利于实现全面屏，提升用户体验。而且功能元件充分利用了显示面板的空间，其容纳空间随着模块化显示面积的增加而增加，因而能够适应显示需求做适应性调整。同时充分利用显示面板充足的空间，有利于克服传统硅半导体工艺集成度过高所造成的适用逻辑电路而不适用模拟电路的局限性，使得显示面板与传统半导体IC各自发挥空间与集成度的优势，达到优势互补效果。\n\n[0097]综上所述，虽然本揭示已以优选实施例揭露如上，但上述优选实施例并非用以限制本揭示，本领域的普通技术人员，在不脱离本揭示的精神和范围内，均可作各种更动与润饰，因此本揭示的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10816, 23870, '技术领域\n\n[0001]本揭示涉及显示技术领域，尤其涉及一种显示面板及其制备方法以及显示装置。\n\n背景技术\n\n[0002]随着Micro LED技术的发展，Micro LED芯片的尺寸越做越小，其对应可制备的Micro LED显示装置的像素密度(Pixels Per Inch，PPI)越来越高，Micro LED芯片在驱动背板上的间距越来越小，数量越来越多。现有的巨量转移技术一次转移面积仅为1英寸(inch)左右，常常需要多次重复的转移过程才能完成一个屏幕的制作，且转移过程中需在驱动背板上提前设计好对位标记(Mark)以保证转移的精度。然而设置对位Mark会额外占用显示像素的空间。\n\n[0003]因此，现有Micro LED显示屏中对位Mark额外占用显示像素空间的问题需要解决。\n\n发明内容\n\n[0004]本揭示提供一种显示面板及其制备方法以及显示装置，以缓解现有Micro LED显示屏中对位Mark额外占用显示像素空间的技术问题。\n\n[0005]为解决上述问题，本揭示提供的技术方案如下：\n\n[0006]本揭示实施例提供一种显示面板，其包括多个子像素单元、以及功能元件组。所述功能元件组设置于相邻的所述子像素单元之间，所述功能元件组与所述子像素单元的功能不同。其中，所述功能元件组包括第一功能元件，所述第一功能元件复用为第一对位标记。\n\n[0007]在本揭示实施例提供的显示面板中，每一所述子像素单元包括Micro LED芯片，所述功能元件组设置于相邻的两所述Micro LED芯片之间。\n\n[0008]在本揭示实施例提供的显示面板中，部分所述第一功能元件复用为所述第一对位标记。\n\n[0009]在本揭示实施例提供的显示面板中，所述功能元件组还包括与所述第一功能元件相邻的第二功能元件，所述第二功能元件的功能和所述第一功能元件的功能不同。\n\n[0010]在本揭示实施例提供的显示面板中，所述第二功能元件复用为第二对位标记。\n\n[0011]在本揭示实施例提供的显示面板中，所述第二功能元件的形状和所述第一功能元件的形状不同。\n\n[0012]在本揭示实施例提供的显示面板中，所述第一对位标记和所述第二对位标记的形状包括圆形、方形、十字形中的一种或几种的组合。\n\n[0013]在本揭示实施例提供的显示面板中，所述第一对位标记和所述第二对位标记的直径或边长分别大于30微米。\n\n[0014]在本揭示实施例提供的显示面板中，所述第二功能元件和所述第一功能元件一块复用为所述第一对位标记。\n\n[0015]在本揭示实施例提供的显示面板中，所述第一功能元件、所述第二功能元件均包括指纹识别传感器、掌纹识别传感器、储能电容、天线中的一种功能元件。\n\n[0016]在本揭示实施例提供的显示面板中，所述显示面板还包括驱动背板及封装层，所述Micro LED芯片绑定在所述驱动背板上，所述封装层覆于所述Micro LED芯片上，且所述驱动背板划分为多个分区，每个所述分区包括多个子像素单元。\n\n[0017]在本揭示实施例提供的显示面板中，每个所述分区内至少有两个所述第一功能元件复用为所述第一对位标记。\n\n[0018]在本揭示实施例提供的显示面板中，至少两个所述第一功能元件位于所述分区的对角侧。\n\n[0019]在本揭示实施例提供的显示面板中，至少两个所述第一功能元件的形状不同。\n\n[0020]本揭示实施例提供一种显示面板制备方法，其包括以下步骤：步骤S10、、提供驱动背板，所述驱动背板划分为多个分区，每个所述分区设置有功能元件组，所述功能元件组包括第一功能元件，其中一部分所述第一功能元件复用为第一对位标记，且所述第一对位标记与另一部分所述第一功能元件的形状不同。步骤S20、提供设置有Micro LED芯片的转移基板，以所述第一对位标记为参照把所述Micro LED芯片转移到所述分区内，并与所述驱动背板绑定。步骤S30、重复步骤S20，把所述Micro LED芯片分次转移到每个所述分区内。步骤S40、剥离掉所述转移基板。步骤S50、在所述Micro LED芯片及所述第一功能元件上制备封装层。\n\n[0021]在本揭示实施例提供的显示面板制备方法中，每个所述分区至少有两个所述第一功能元件复用为所述第一对位标记，至少两个所述第一功能元件设置于所述分区的对角侧，且至少两个所述第一功能元件的形状不同。\n\n[0022]本揭示实施例提供一种显示装置，其包括前述实施例其中之一的显示面板。\n\n[0023]本揭示的有益效果为：本揭示提供的显示面板及其制备方法以及显示装置中，把功能元件组集成到像素单元内，提高了显示面板的集成度。且把部分功能元件的形状做成对位Mark的形状，实现与巨量转移对位Mark复用。其余不做Mark复用的功能元件保持面积最大化设计。如此不需要额外占用像素空间单独制作巨量转移对位Mark，可保证功能元件面积的最大化。而且可加大各显示子像素的设计自由度，利于提高显示子像素的空间，进而实现高PPI显示。\n\n附图说明\n\n[0024]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0025]图1为本揭示实施例提供的显示面板的第一种下视结构示意图；\n\n[0026]图2为本揭示实施例提供的显示面板的第二种下视结构示意图；\n\n[0027]图3为本揭示实施例提供的显示面板的第二种侧视结构示意图；\n\n[0028]图4为本揭示实施例提供的指纹识别传感器PIN结构示意图；\n\n[0029]图5为本揭示实施例提供的Micro LED芯片光出射方向的示意图；\n\n[0030]图6为本揭示实施例提供的显示面板的第三种下视结构示意图；\n\n[0031]图7为本揭示实施例提供的显示面板的第四种下视结构示意图；\n\n[0032]图8为本揭示实施例提供的显示面板的第五种下视结构示意图；\n\n[0033]图9至图17为本揭示实施例提供的显示面板制备方法中各步骤制得的结构示意图；\n\n[0034]图18为本揭示实施例提供的显示装置的侧视结构示意图。\n\n具体实施方式\n\n[0035]以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。\n\n[0036]在一种实施例中，提供一种显示面板100，如图1所示，显示面板100包括驱动背板10、多个子像素单元20、功能元件组30。多个子像素单元20设置在驱动背板10上，功能元件组30设置于相邻的子像素单元20之间。功能元件组20与子像素单元20的功能不同。其中，功能元件组30包括第一功能元件31，第一功能元件31复用为第一对位标记。\n\n[0037]具体的，每个子像素单元20包括Micro LED芯片21，Micro LED芯片21绑定在驱动背板10上。功能元件组30设置于相邻的两个Micro LED芯片21之间，且设置于驱动背板10上。\n\n[0038]进一步的，功能元件组30与子像素单元20的功能不同。具体的，子像素单元20的主要功能为显示功能，即为显示面板的显示提供画素。功能元件组的功能为非显示功能，比如可以为实现指纹识别等其他非显示功能。\n\n[0039]进一步的，Micro LED芯片21的长宽范围为1微米至100微米，高度范围为1微米至20微米。\n\n[0040]具体的，一部分第一功能元件31复用为第一对位标记。复用为第一对位标记的第一功能元件和未复用为第一对位标记的第一功能元件的形状不同。也即第一对位标记的形状和另一部分的第一功能元件的形状不同。\n\n[0041]具体的，如图1所示，一部分第一功能元件31复用为第一对位标记311，第一对位标记311设置为十字形，未复用为第一对位标记311的第一功能元件31设置为矩形。\n\n[0042]进一步的，第一对位标记311的形状还可以为圆形、方形等其他mark形状中的一种或多种的组合。\n\n[0043]进一步的，所述第一对位标记311的直径或边长大于30微米。\n\n[0044]进一步的，第一功能元件31可以为指纹识别传感器、掌纹识别传感器、储能电容、天线等功能元件中的至少一种。\n\n[0045]进一步的，第一对位标记311的数量至少为两个。两个第一对位标记311设置在驱动背板的对角侧，以满足把Micro LED芯片转移到驱动背板上时，可以精准对位。\n\n[0046]进一步的，两个第一对位标记311的形状可以相同或不同。两个第一功能元件31的形状不同时，可以提高对位的精准度。\n\n[0047]当然的，第一对位标记的数量也可以为更多个，如可以把全部的第一功能元件设置为mark形状，复用为第一对位标记。\n\n[0048]在本实施例中，通过把第一功能元件复用为对位标记，如此不需要占用额外的像素空间单独制作巨量转移对位Mark，不影响功能元件的集成。\n\n[0049]在一种实施例中，提供一种显示面板101，请参照图2和图3，其包括驱动背板10、多个子像素单元20、功能元件组30、及封装层40。所述驱动背板10划分为多个分区11。所述多个子像素单元20，分布在每个所述分区11内，每个所述子像素单元20包括一个Micro LED芯片21，所述Micro LED芯片21绑定在所述驱动背板10上。所述功能元件组30，设置于所述驱动背板10上，且位于两个相邻的所述Micro LED芯片21之间。功能元件组30与子像素单元20的功能不同。其中，功能元件组30包括第一功能元件31，部分第一功能元件31复用为第一对位标记311。所述封装层40设置于所述Micro LED芯片21及所述功能元件组30上，如图3所示。其中，所述第一对位标记311的形状和未复用为第一对位标记的第一功能元件31的形状不同，如图2所示。\n\n[0050]具体的，所述第一功能元件31可以为指纹识别传感器或掌纹识别传感器，用于实现指纹识别或掌纹识别。为实现指纹识别或掌纹识别，显示面板101还包括设置于所述封装层40上的光路层50，所述光路层50上设置有透光区51，所述透光区51对应于所述第一功能元件31，如图3所示。其中所述光路层50用于将手指反射的光线准直，提高指纹采集图像对比度。\n\n[0051]具体的，以所述第一功能元件31为指纹识别传感器为例说明，指纹识别传感器设置在驱动背板10上，驱动背板10划分为多个分区11。每个分区11包括多个子像素单元20，每三个子像素单元20构成一个像素2。指纹识别传感器可以设置在部分或全部相邻的子像素单元20之间，也即指纹识别传感器设置在每个像素2内未设置Micro LED芯片21的区域。如图2示例性的示出两个分区11，及每个分区11的部分子像素单元20，以及每个像素2内设置一个指纹识别传感器。当然的，全部相邻的子像素单元20之间均设置指纹识别传感器，可以实现大面积的指纹识别，指纹解锁体验会更加自由、便捷，提升用户体验。\n\n[0052]具体的，指纹识别传感器可以采用α-Si(非晶硅)、LTPS(Low Temperature PolySilicon，低温多晶硅)、OPD(Organic Photo diode，有机材料构成的光电二级管)等PIN结构实现，如图4所示的指纹识别传感器PIN结构包括层叠设置的阴极3111、电子传输层3112、本征有源层3113、空穴传输层3114及阳极3115。\n\n[0053]进一步的，复用为第一对位标记的指纹识别传感器和未复用为对位标记的指纹识别传感器的形状不同。也即如图2所示的，所述第一对位标记311的形状和未复用为第一对位标记的第一功能元件31的形状不同。\n\n[0054]具体的，第一对位标记311的形状包括圆形、方形、十字形等mark形状中的一种或几种的组合。未复用为第一对位标记的第一功能元件31的形状可以为矩形等。\n\n[0055]进一步的，所述第一对位标记311的直径或边长大于30微米。\n\n[0056]具体的，如图2所示，每个分区11内至少有两个第一功能元件复用为第一对位标记311。其中两个第一对位标记311(也即复用为第一对位标记311的两个第一功能元件)设置于分区11的两个对角侧，两个第一对位标记311关于分区11的中心对称。当然的，第一对位标记311也可以设置在分区11的其他区域，能满足对位需求即可。\n\n[0057]进一步的，第一对位标记311的形状和未复用为第一对位标记的第一功能元件31的形状不同，且两个第一对位标记311的形状也不同。具体的，第一对位标记311的形状设置为不同的十字形和方形，在作为对位标记时可以提高对位精准度。未复用为第一对位标记的第一功能元件31的形状设置为矩形，以便于光路搭配提高成像效果。\n\n[0058]具体的，每个像素2包括三个Micro LED芯片21，分别为红、绿、蓝三基色Micro LED芯片，用于显示面板的显示。设置有Micro LED芯片21的区域为像素2的显示区。也即每个像素2包括红、绿、蓝三个显示子像素单元20，显示子像素单元20的排列可以是条状、品字形等，像素可以采用备份或者不备份设计。当然的，每个像素2的三个Micro LED芯片21也可以为同色Micro LED芯片，并配合量子点膜或荧光粉实现显示三基色。\n\n[0059]需要说明的是，本揭示的像素2不限于采用RGB(红、绿、蓝)三基色显示，也可以采用RGBW(红、绿、蓝、白)等四元像素。采用RGBW四元像素时，每个像素包括四个Micro LED芯片。\n\n[0060]进一步的，Micro LED芯片21可以为基底面出射或者电极面出射结构，如图5所示的Micro LED芯片结构包括基底211、发光层212、电极层213。如图5(a)示出的为电极面出射结构，如图5(b)示出的为基底面出射结构，图5中带箭头的虚线X的指向表示光的出射方向。\n\n[0061]进一步的，Micro LED芯片21通过巨量转移等技术转移并绑定到驱动背板10上。如图3所示，驱动背板10包括衬底12及设置在衬底12上的驱动电路层13，驱动电路层13包括用于驱动Micro LED芯片21的驱动电路(图未示)和用于驱动指纹识别传感器的驱动电路(图未示)。驱动电路采用包括基于α-Si、LTPS、IGZO(Indium Gallium Zinc Oxide，铟镓锌氧化物)等的主动阵列驱动技术或者被动阵列驱动技术实现。\n\n[0062]具体的，在显示面板的显示区面积较大的情况下，为保证Micro LED显示的显示效果，Micro LED芯片21的驱动电路可以采用主动AM阵列驱动技术实现。\n\n[0063]具体的，指纹识别传感器的驱动电路可以采用主动式或者被动式阵列驱动方式，其中主动式利用光生电流产生的电压对生物信号进行光生电压放大，通常采用3T(薄膜晶体管)或者4T驱动架构。被动式驱动直接利用指纹识别传感器产生的光生电流在一定时间内的积分作为生物识别信号，通常采用1T或者2T驱动架构。\n\n[0064]具体的，显示面板101包括数量巨大的Micro LED芯片21，需要经过多次巨量转移把所有Micro LED芯片21转移并绑定在驱动背板10上。巨量转移的次数等于驱动背板10上的分区数量。分区11的长和宽的尺寸范围为2厘米～3厘米，且每个分区11的尺寸大小相同，以便分区11之间采用统一方式进行对位、转移和绑定，从而简化制程。\n\n[0065]具体的，在对每个分区11进行巨量转移时，以每个分区11内的第一对位标记311为参照，把Micro LED芯片21转移并绑定在对应分区11的驱动背板10上。\n\n[0066]进一步的，完成对所有分区11的巨量转移后，在Micro LED芯片21及指纹识别传感器上制备一层封装层40。封装层40为高段差吸收封装层，用于平衡各个Micro LED芯片21间的段差，同时保护Micro LED芯片21，避免水氧入侵。\n\n[0067]在本实施例中，把指纹识别传感器集成在像素单元的非显示区，像素单元内MicroLED芯片发出的光线经手指纹路反射到指纹识别传感器上，可产生指纹脊骨差异性光电响应信号，并结合指纹信号预处理、特征点提取、比对算法模块进行指纹识别认证，实现指纹识别功能。不需要指纹识别时，Micro LED芯片发光实现全彩显示。同时每个分区部分指纹识别传感器的形状做成对位Mark的形状，实现指纹识别传感器与巨量转移对位Mark复用。其余不做Mark复用的指纹识别传感器保持面积最大化设计。如此不需要占用额外的像素空间单独制作巨量转移对位Mark，可保证指纹识别传感器面积的最大化。\n\n[0068]在一种实施例中，与上述实施例不同的是，所述功能元件组还包括与所述第一功能元件相邻的第二功能元件，所述第二功能元件与所述第一功能元件为不同的功能元件，即所述第二功能元件与所述第一功能元件的功能不同。\n\n[0069]具体的，第二功能元件也可以为指纹识别传感器、掌纹识别传感器、储能电容、天线等功能元件中的至少一种，但不同于第一功能元件。\n\n[0070]具体的，以第一功能元件31为指纹识别传感器，第二功能元件32为储能电容为例说明。如图6所示的显示面板102，功能元件组30包括第一功能元件31、第二功能元件32。第一功能元件31、第二功能元件32一块设置在对应的相邻的子像素单元21之间，也即像素2的非显示区。每个像素2内设置有一个指纹识别传感器和储能电容。\n\n[0071]具体的，功能元件组30设置在相邻的两行像素2之间。每个像素2包括三个子像素单元20，每个子像素单元20包括一个Micro LED芯片21，功能元件组30设置于像素2内未设置Micro LED芯片21的区域。\n\n[0072]进一步的，部分第一功能元件31复用为第一对位标记311。第一对位标记311的形状与未复用为第一对位标记的第一功能元件31及第二功能元件32的形状不同。\n\n[0073]具体的，如图6所示，在每个分区11内(图6示例性的示出了驱动背板10上的一个分区11)设置至少两个第一对位标记311。第一对位标记311为指纹识别传感器，同时复用为对位标记。第一对位标记311的形状为十字形，当然也可以设置为其他的mark形状。未复用为第一对位标记的第一功能元件31及第二功能元件32的形状为矩形。\n\n[0074]进一步的，第一对位标记311设置于分区11的两个对角侧，两个第一对位标记311关于分区11的中心对称。当然的，第一对位标记311也可以设置在分区的其他区域，能满足对位需求即可。\n\n[0075]进一步的，两个第一对位标记311也可以设置为不同的形状。\n\n[0076]具体的，储能电容可以为单层或者多层电极板的平板电容结构。储能电容的介电层材料包括氮化硅(SiNx)、氧化硅(SiOx)等无机材料或陶瓷材料钛酸钡、钛酸锶等或者金属钽等。\n\n[0077]进一步的，储能电容通过对应的电路与外围充电电路连接，在像素单元通电显示状态下同步进行充电，当断电后可以通过电荷转换单元反向给像素单元内不同的显示子像素供电，从而充当一定功能的储能电池用途，提升显示系统的续航能力。\n\n[0078]进一步的，为提升储能电容的电容大小，并避免电容讯号对显示子像素驱动电路的影响，储能电容设置于显示子像素及其驱动电路以外的区域。且储能电容的形状可以为任意异形形貌以最大化储能电容的大小。\n\n[0079]在本实施例中，把指纹识别传感器和储能电容同时集成在像素内，并把部分指纹识别传感器设计成Mark形状，在巨量转移时复用为对位标记。指纹识别传感器和储能电容在像素单元非显示区的设置位置、设置方式及形状不限于本揭示实施例示出的，其他说明请参照上述实施例，在此不再赘述。\n\n[0080]在一种实施例中，与上述实施例不同的是，所述第一功能元件复用为第一对位标记，所述第二功能元件复用为第二对位标记。所述第二对位标记的形状与所述第一功能元件的形状不同。\n\n[0081]具体的，如图7所示的显示面板103，部分第二功能元件32复用为第二对位标记321。在驱动背板10的分区11内，至少设置有一个第一对位标记311和一个第二对位标记321。第一功能元件31可以为指纹识别传感器，同时复用为第一对位标记。第二功能元件32可以为储能电容，同时复用为第二对位标记。\n\n[0082]具体的，第一对位标记311和第二对位标记321位于分区11的两对角侧。当然的第一对位标记311和第二对位标记321也可以设置在分区11的其他区域，能满足对位需求即可。\n\n[0083]进一步的，第二对位标记321的形状与第一功能元件31的形状不同，第二对位标记321的形状与未复用为第二对位标记的第二功能元件32的形状也不同。如图7所示，第二对位标记321的形状为方形，第一对位标记311的形状为十字形，当然的第一对位标记311和第二对位标记321的形状均不限于此，也可以为其他mark形状，且第一对位标记311和第二对位标记321的形状也可以相同。未复用为第一对位标记的第一功能元件31、及未复用为第二对位标记的第二功能元件32设置为规则的形状，如矩形等。\n\n[0084]具体的，第二对位标记321的形状包括圆形、方形、十字形等mark形状中的一种或几种的组合。\n\n[0085]进一步的，所述第二对位标记321的直径或边长大于30微米。\n\n[0086]可以理解的是，第二功能元件也可以全部复用为第二对位标记，第二功能元件的形状和第一功能元件的形状不同即可。其他说明请参照上述实施例，在此不再赘述。\n\n[0087]在一种实施例中，与上述实施例不同的是，所述第二功能元件和所述第一功能元件一块复用为第一对位标记。如图8所示的显示面板104，部分所述第二功能元件和第一功能元件一块复用为第一对位标记311。复用为第一对位标记311的第一功能元件和第二功能元件的形状均为半圆形，两个半圆组成近似的圆形作为第一对位标记311。其他未复用为第一对位标记的第一功能元件31和第二功能元件32设置为矩形等其他常规图形。其他说明请参照上述实施例，在此不再赘述。\n\n[0088]需要说明的是，本揭示的功能元件组不限于本揭示实施例示出的，本揭示的功能元件组还可以包括指纹识别传感器或掌纹识别传感器或与其他功能元件的组合，如与各种天线、存储单元等的组合。而且复用为对位标记的功能元件也不限于本揭示实施例示出的，以及对位标记的数量及设置位置不限于本揭示图示示出的，在此不再一一说明。\n\n[0089]在一种实施例中，提供一种显示面板的制备方法，其包括以下步骤：\n\n[0090]步骤S10、提供驱动背板，如图9所示，所述驱动背板10划分为多个分区11，每个所述分区11内设置有功能元件组30，所述功能元件组30包括第一功能元件31，其中一部分所述第一功能元件31复用为第一对位标记311，且所述第一对位标记311与另一部分所述第一功能元件31的形状不同。\n\n[0091]具体的，第一功能元件31包括指纹识别传感器、掌纹识别传感器、储能电容、天线等功能元件中的一种或多种。\n\n[0092]具体的，以第一功能元件31设置为指纹识别传感器为例说明。如图10所示，驱动背板10包括衬底12及设置于衬底12上的驱动电路层13。第一功能元件31设置在驱动电路层13上。驱动电路层13包括用于驱动Micro LED芯片的驱动电路(图未示)和用于驱动指纹识别传感器的驱动电路(图未示)。驱动电路采用包括基于α-Si、LTPS、IGZO等的主动阵列驱动技术或者被动阵列驱动技术实现。指纹识别传感器设置在对应的驱动电路上方。\n\n[0093]进一步的，驱动背板10上划分的分区11的数量等于需要的巨量转移次数。分区11的长和宽的尺寸范围为2厘米至3厘米，且每个分区11的尺寸大小相同，以便分区11之间采用统一方式进行对位、转移和绑定，从而简化制程。\n\n[0094]进一步的，在每个分区11内，至少有两个第一功能元件复用为第一对位标记311。第一对位标记311为指纹识别传感器，同时复用为对位标记。第一对位标记311的形状为十字形，当然也可以设置为其他的mark形状。未复用为第一对位标记的第一功能元件31设置为规则的形状，如矩形等。\n\n[0095]进一步的，第一对位标记311的Mark形状包括圆形、方形十字形等中的一种或几种的组合，如图9示出的第一对位标记311的形状为十字形。\n\n[0096]进一步的，每个分区11内的至少两个第一对位标记311设置于分区11的两个对角侧，两个第一对位标记311关于分区的中心对称。当然的，第一对位标记311也可以设置在分区的其他区域，能满足对位需求即可。\n\n[0097]进一步的，两个第一对位标记311的形状也可以不同，以提高对位的精准度。\n\n[0098]步骤S20、提供设置有Micro LED芯片的转移基板，以所述第一对位标记为参照把所述Micro LED芯片转移到所述分区内，并与所述驱动背板绑定。\n\n[0099]具体的，如图11所示，转移基板70上的Micro LED芯片21可以为红、绿、蓝三基色Micro LED芯片。或者为同色Micro LED芯片，并配合量子点膜或荧光粉实现显示三基色。\n\n[0100]进一步的，Micro LED芯片21可以为基底面出射或者电极面出射结构。\n\n[0101]进一步的，Micro LED芯片21的长宽范围为1微米至100微米，高度范围为1微米至20微米。\n\n[0102]具体的，以分区11内的第一对位标记311为参照，采用巨量转移技术把转移基板70上的Micro LED芯片21转移到对应的分区11内，并绑定到驱动背板10上，实现与驱动背板10上对应的驱动电路电性连接，形成如图12所示的下视结构示意图和图13所示的膜层结构侧视示意图。\n\n[0103]步骤S30、重复步骤S20，把所述Micro LED芯片分次转移到每个所述分区内。\n\n[0104]具体的，采用统一的巨量转移方式进行对位、转移和绑定，把所述Micro LED芯片21分次转移到驱动背板10上的每个所述分区11内，形成如图14所示的下视结构示意图和图15所示的膜层结构侧视示意图。\n\n[0105]步骤S40、剥离掉所述转移基板，形成如图16所示的结构。\n\n[0106]步骤S50、在所述Micro LED芯片及所述功能元件上制备封装层40，形成如图17所示的结构。\n\n[0107]具体的，完成对所有分区的巨量转移后，在Micro LED芯片及指纹识别传感器上制备一层封装层。封装层为高段差吸收封装层，用于平衡各个Micro LED芯片间的段差，同时保护Micro LED芯片，避免水氧入侵。\n\n[0108]进一步的，在封装层上制备光路层，并在光路层上设置透光区。透光区与指纹识别传感器一一对应，如图3所示。\n\n[0109]在一种实施例中，提供一种显示装置，如图18所示，显示装置1000包括上述实施例其中之一的显示面板101、及设置在显示面板101上的透明贴合层200及盖板300。其中显示面板101包括驱动背板10、设置在驱动背板10上的Micro LED芯片21及第一功能元件31、及封装层40、光路层50及光路层50上设置的透光区51，其中第一功能元件31复用为第一对位标记。\n\n[0110]根据上述实施例可知：\n\n[0111]本揭示提供一种显示面板及其制备方法以及显示装置，显示面板包括驱动背板、设置在驱动背板上的功能元件组和对位标记、绑定在驱动背板上的Micro LED芯片、及设置在Micro LED芯片和功能元件组上的封装层。功能元件组集成在像素单元内未设置MicroLED芯片的区域，且部分功能元件设置为易于识别的形状作为对位标记。把功能元件集成到像素单元内，提高了显示面板的集成度。且部分功能元件的形状做成对位Mark的形状，在巨量转移时可以复用为对位Mark。其余不做Mark复用的功能元件保持面积最大化设计。如此不需要占用额外的像素空间单独制作巨量转移对位Mark，可保证集成功能元件面积的最大化。而且可加大各显示子像素的设计自由度，利于提高显示子像素的空间，进而实现高PPI显示。\n\n[0112]综上所述，虽然本揭示已以优选实施例揭露如上，但上述优选实施例并非用以限制本揭示，本领域的普通技术人员，在不脱离本揭示的精神和范围内，均可作各种更动与润饰，因此本揭示的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本揭示涉及显示技术领域，尤其涉及一种显示面板及其制备方法以及显示装置。\n\n背景技术\n\n[0002]随着Micro LED技术的发展，Micro LED芯片的尺寸越做越小，其对应可制备的Micro LED显示装置的像素密度(Pixels Per Inch，PPI)越来越高，Micro LED芯片在驱动背板上的间距越来越小，数量越来越多。现有的巨量转移技术一次转移面积仅为1英寸(inch)左右，常常需要多次重复的转移过程才能完成一个屏幕的制作，且转移过程中需在驱动背板上提前设计好对位标记(Mark)以保证转移的精度。然而设置对位Mark会额外占用显示像素的空间。\n\n[0003]因此，现有Micro LED显示屏中对位Mark额外占用显示像素空间的问题需要解决。\n\n发明内容\n\n[0004]本揭示提供一种显示面板及其制备方法以及显示装置，以缓解现有Micro LED显示屏中对位Mark额外占用显示像素空间的技术问题。\n\n[0005]为解决上述问题，本揭示提供的技术方案如下：\n\n[0006]本揭示实施例提供一种显示面板，其包括多个子像素单元、以及功能元件组。所述功能元件组设置于相邻的所述子像素单元之间，所述功能元件组与所述子像素单元的功能不同。其中，所述功能元件组包括第一功能元件，所述第一功能元件复用为第一对位标记。\n\n[0007]在本揭示实施例提供的显示面板中，每一所述子像素单元包括Micro LED芯片，所述功能元件组设置于相邻的两所述Micro LED芯片之间。\n\n[0008]在本揭示实施例提供的显示面板中，部分所述第一功能元件复用为所述第一对位标记。\n\n[0009]在本揭示实施例提供的显示面板中，所述功能元件组还包括与所述第一功能元件相邻的第二功能元件，所述第二功能元件的功能和所述第一功能元件的功能不同。\n\n[0010]在本揭示实施例提供的显示面板中，所述第二功能元件复用为第二对位标记。\n\n[0011]在本揭示实施例提供的显示面板中，所述第二功能元件的形状和所述第一功能元件的形状不同。\n\n[0012]在本揭示实施例提供的显示面板中，所述第一对位标记和所述第二对位标记的形状包括圆形、方形、十字形中的一种或几种的组合。\n\n[0013]在本揭示实施例提供的显示面板中，所述第一对位标记和所述第二对位标记的直径或边长分别大于30微米。\n\n[0014]在本揭示实施例提供的显示面板中，所述第二功能元件和所述第一功能元件一块复用为所述第一对位标记。\n\n[0015]在本揭示实施例提供的显示面板中，所述第一功能元件、所述第二功能元件均包括指纹识别传感器、掌纹识别传感器、储能电容、天线中的一种功能元件。\n\n[0016]在本揭示实施例提供的显示面板中，所述显示面板还包括驱动背板及封装层，所述Micro LED芯片绑定在所述驱动背板上，所述封装层覆于所述Micro LED芯片上，且所述驱动背板划分为多个分区，每个所述分区包括多个子像素单元。\n\n[0017]在本揭示实施例提供的显示面板中，每个所述分区内至少有两个所述第一功能元件复用为所述第一对位标记。\n\n[0018]在本揭示实施例提供的显示面板中，至少两个所述第一功能元件位于所述分区的对角侧。\n\n[0019]在本揭示实施例提供的显示面板中，至少两个所述第一功能元件的形状不同。\n\n[0020]本揭示实施例提供一种显示面板制备方法，其包括以下步骤：步骤S10、、提供驱动背板，所述驱动背板划分为多个分区，每个所述分区设置有功能元件组，所述功能元件组包括第一功能元件，其中一部分所述第一功能元件复用为第一对位标记，且所述第一对位标记与另一部分所述第一功能元件的形状不同。步骤S20、提供设置有Micro LED芯片的转移基板，以所述第一对位标记为参照把所述Micro LED芯片转移到所述分区内，并与所述驱动背板绑定。步骤S30、重复步骤S20，把所述Micro LED芯片分次转移到每个所述分区内。步骤S40、剥离掉所述转移基板。步骤S50、在所述Micro LED芯片及所述第一功能元件上制备封装层。\n\n[0021]在本揭示实施例提供的显示面板制备方法中，每个所述分区至少有两个所述第一功能元件复用为所述第一对位标记，至少两个所述第一功能元件设置于所述分区的对角侧，且至少两个所述第一功能元件的形状不同。\n\n[0022]本揭示实施例提供一种显示装置，其包括前述实施例其中之一的显示面板。\n\n[0023]本揭示的有益效果为：本揭示提供的显示面板及其制备方法以及显示装置中，把功能元件组集成到像素单元内，提高了显示面板的集成度。且把部分功能元件的形状做成对位Mark的形状，实现与巨量转移对位Mark复用。其余不做Mark复用的功能元件保持面积最大化设计。如此不需要额外占用像素空间单独制作巨量转移对位Mark，可保证功能元件面积的最大化。而且可加大各显示子像素的设计自由度，利于提高显示子像素的空间，进而实现高PPI显示。\n\n附图说明\n\n[0024]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0025]图1为本揭示实施例提供的显示面板的第一种下视结构示意图；\n\n[0026]图2为本揭示实施例提供的显示面板的第二种下视结构示意图；\n\n[0027]图3为本揭示实施例提供的显示面板的第二种侧视结构示意图；\n\n[0028]图4为本揭示实施例提供的指纹识别传感器PIN结构示意图；\n\n[0029]图5为本揭示实施例提供的Micro LED芯片光出射方向的示意图；\n\n[0030]图6为本揭示实施例提供的显示面板的第三种下视结构示意图；\n\n[0031]图7为本揭示实施例提供的显示面板的第四种下视结构示意图；\n\n[0032]图8为本揭示实施例提供的显示面板的第五种下视结构示意图；\n\n[0033]图9至图17为本揭示实施例提供的显示面板制备方法中各步骤制得的结构示意图；\n\n[0034]图18为本揭示实施例提供的显示装置的侧视结构示意图。\n\n具体实施方式\n\n[0035]以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。\n\n[0036]在一种实施例中，提供一种显示面板100，如图1所示，显示面板100包括驱动背板10、多个子像素单元20、功能元件组30。多个子像素单元20设置在驱动背板10上，功能元件组30设置于相邻的子像素单元20之间。功能元件组20与子像素单元20的功能不同。其中，功能元件组30包括第一功能元件31，第一功能元件31复用为第一对位标记。\n\n[0037]具体的，每个子像素单元20包括Micro LED芯片21，Micro LED芯片21绑定在驱动背板10上。功能元件组30设置于相邻的两个Micro LED芯片21之间，且设置于驱动背板10上。\n\n[0038]进一步的，功能元件组30与子像素单元20的功能不同。具体的，子像素单元20的主要功能为显示功能，即为显示面板的显示提供画素。功能元件组的功能为非显示功能，比如可以为实现指纹识别等其他非显示功能。\n\n[0039]进一步的，Micro LED芯片21的长宽范围为1微米至100微米，高度范围为1微米至20微米。\n\n[0040]具体的，一部分第一功能元件31复用为第一对位标记。复用为第一对位标记的第一功能元件和未复用为第一对位标记的第一功能元件的形状不同。也即第一对位标记的形状和另一部分的第一功能元件的形状不同。\n\n[0041]具体的，如图1所示，一部分第一功能元件31复用为第一对位标记311，第一对位标记311设置为十字形，未复用为第一对位标记311的第一功能元件31设置为矩形。\n\n[0042]进一步的，第一对位标记311的形状还可以为圆形、方形等其他mark形状中的一种或多种的组合。\n\n[0043]进一步的，所述第一对位标记311的直径或边长大于30微米。\n\n[0044]进一步的，第一功能元件31可以为指纹识别传感器、掌纹识别传感器、储能电容、天线等功能元件中的至少一种。\n\n[0045]进一步的，第一对位标记311的数量至少为两个。两个第一对位标记311设置在驱动背板的对角侧，以满足把Micro LED芯片转移到驱动背板上时，可以精准对位。\n\n[0046]进一步的，两个第一对位标记311的形状可以相同或不同。两个第一功能元件31的形状不同时，可以提高对位的精准度。\n\n[0047]当然的，第一对位标记的数量也可以为更多个，如可以把全部的第一功能元件设置为mark形状，复用为第一对位标记。\n\n[0048]在本实施例中，通过把第一功能元件复用为对位标记，如此不需要占用额外的像素空间单独制作巨量转移对位Mark，不影响功能元件的集成。\n\n[0049]在一种实施例中，提供一种显示面板101，请参照图2和图3，其包括驱动背板10、多个子像素单元20、功能元件组30、及封装层40。所述驱动背板10划分为多个分区11。所述多个子像素单元20，分布在每个所述分区11内，每个所述子像素单元20包括一个Micro LED芯片21，所述Micro LED芯片21绑定在所述驱动背板10上。所述功能元件组30，设置于所述驱动背板10上，且位于两个相邻的所述Micro LED芯片21之间。功能元件组30与子像素单元20的功能不同。其中，功能元件组30包括第一功能元件31，部分第一功能元件31复用为第一对位标记311。所述封装层40设置于所述Micro LED芯片21及所述功能元件组30上，如图3所示。其中，所述第一对位标记311的形状和未复用为第一对位标记的第一功能元件31的形状不同，如图2所示。\n\n[0050]具体的，所述第一功能元件31可以为指纹识别传感器或掌纹识别传感器，用于实现指纹识别或掌纹识别。为实现指纹识别或掌纹识别，显示面板101还包括设置于所述封装层40上的光路层50，所述光路层50上设置有透光区51，所述透光区51对应于所述第一功能元件31，如图3所示。其中所述光路层50用于将手指反射的光线准直，提高指纹采集图像对比度。\n\n[0051]具体的，以所述第一功能元件31为指纹识别传感器为例说明，指纹识别传感器设置在驱动背板10上，驱动背板10划分为多个分区11。每个分区11包括多个子像素单元20，每三个子像素单元20构成一个像素2。指纹识别传感器可以设置在部分或全部相邻的子像素单元20之间，也即指纹识别传感器设置在每个像素2内未设置Micro LED芯片21的区域。如图2示例性的示出两个分区11，及每个分区11的部分子像素单元20，以及每个像素2内设置一个指纹识别传感器。当然的，全部相邻的子像素单元20之间均设置指纹识别传感器，可以实现大面积的指纹识别，指纹解锁体验会更加自由、便捷，提升用户体验。\n\n[0052]具体的，指纹识别传感器可以采用α-Si(非晶硅)、LTPS(Low Temperature PolySilicon，低温多晶硅)、OPD(Organic Photo diode，有机材料构成的光电二级管)等PIN结构实现，如图4所示的指纹识别传感器PIN结构包括层叠设置的阴极3111、电子传输层3112、本征有源层3113、空穴传输层3114及阳极3115。\n\n[0053]进一步的，复用为第一对位标记的指纹识别传感器和未复用为对位标记的指纹识别传感器的形状不同。也即如图2所示的，所述第一对位标记311的形状和未复用为第一对位标记的第一功能元件31的形状不同。\n\n[0054]具体的，第一对位标记311的形状包括圆形、方形、十字形等mark形状中的一种或几种的组合。未复用为第一对位标记的第一功能元件31的形状可以为矩形等。\n\n[0055]进一步的，所述第一对位标记311的直径或边长大于30微米。\n\n[0056]具体的，如图2所示，每个分区11内至少有两个第一功能元件复用为第一对位标记311。其中两个第一对位标记311(也即复用为第一对位标记311的两个第一功能元件)设置于分区11的两个对角侧，两个第一对位标记311关于分区11的中心对称。当然的，第一对位标记311也可以设置在分区11的其他区域，能满足对位需求即可。\n\n[0057]进一步的，第一对位标记311的形状和未复用为第一对位标记的第一功能元件31的形状不同，且两个第一对位标记311的形状也不同。具体的，第一对位标记311的形状设置为不同的十字形和方形，在作为对位标记时可以提高对位精准度。未复用为第一对位标记的第一功能元件31的形状设置为矩形，以便于光路搭配提高成像效果。\n\n[0058]具体的，每个像素2包括三个Micro LED芯片21，分别为红、绿、蓝三基色Micro LED芯片，用于显示面板的显示。设置有Micro LED芯片21的区域为像素2的显示区。也即每个像素2包括红、绿、蓝三个显示子像素单元20，显示子像素单元20的排列可以是条状、品字形等，像素可以采用备份或者不备份设计。当然的，每个像素2的三个Micro LED芯片21也可以为同色Micro LED芯片，并配合量子点膜或荧光粉实现显示三基色。\n\n[0059]需要说明的是，本揭示的像素2不限于采用RGB(红、绿、蓝)三基色显示，也可以采用RGBW(红、绿、蓝、白)等四元像素。采用RGBW四元像素时，每个像素包括四个Micro LED芯片。\n\n[0060]进一步的，Micro LED芯片21可以为基底面出射或者电极面出射结构，如图5所示的Micro LED芯片结构包括基底211、发光层212、电极层213。如图5(a)示出的为电极面出射结构，如图5(b)示出的为基底面出射结构，图5中带箭头的虚线X的指向表示光的出射方向。\n\n[0061]进一步的，Micro LED芯片21通过巨量转移等技术转移并绑定到驱动背板10上。如图3所示，驱动背板10包括衬底12及设置在衬底12上的驱动电路层13，驱动电路层13包括用于驱动Micro LED芯片21的驱动电路(图未示)和用于驱动指纹识别传感器的驱动电路(图未示)。驱动电路采用包括基于α-Si、LTPS、IGZO(Indium Gallium Zinc Oxide，铟镓锌氧化物)等的主动阵列驱动技术或者被动阵列驱动技术实现。\n\n[0062]具体的，在显示面板的显示区面积较大的情况下，为保证Micro LED显示的显示效果，Micro LED芯片21的驱动电路可以采用主动AM阵列驱动技术实现。\n\n[0063]具体的，指纹识别传感器的驱动电路可以采用主动式或者被动式阵列驱动方式，其中主动式利用光生电流产生的电压对生物信号进行光生电压放大，通常采用3T(薄膜晶体管)或者4T驱动架构。被动式驱动直接利用指纹识别传感器产生的光生电流在一定时间内的积分作为生物识别信号，通常采用1T或者2T驱动架构。\n\n[0064]具体的，显示面板101包括数量巨大的Micro LED芯片21，需要经过多次巨量转移把所有Micro LED芯片21转移并绑定在驱动背板10上。巨量转移的次数等于驱动背板10上的分区数量。分区11的长和宽的尺寸范围为2厘米～3厘米，且每个分区11的尺寸大小相同，以便分区11之间采用统一方式进行对位、转移和绑定，从而简化制程。\n\n[0065]具体的，在对每个分区11进行巨量转移时，以每个分区11内的第一对位标记311为参照，把Micro LED芯片21转移并绑定在对应分区11的驱动背板10上。\n\n[0066]进一步的，完成对所有分区11的巨量转移后，在Micro LED芯片21及指纹识别传感器上制备一层封装层40。封装层40为高段差吸收封装层，用于平衡各个Micro LED芯片21间的段差，同时保护Micro LED芯片21，避免水氧入侵。\n\n[0067]在本实施例中，把指纹识别传感器集成在像素单元的非显示区，像素单元内MicroLED芯片发出的光线经手指纹路反射到指纹识别传感器上，可产生指纹脊骨差异性光电响应信号，并结合指纹信号预处理、特征点提取、比对算法模块进行指纹识别认证，实现指纹识别功能。不需要指纹识别时，Micro LED芯片发光实现全彩显示。同时每个分区部分指纹识别传感器的形状做成对位Mark的形状，实现指纹识别传感器与巨量转移对位Mark复用。其余不做Mark复用的指纹识别传感器保持面积最大化设计。如此不需要占用额外的像素空间单独制作巨量转移对位Mark，可保证指纹识别传感器面积的最大化。\n\n[0068]在一种实施例中，与上述实施例不同的是，所述功能元件组还包括与所述第一功能元件相邻的第二功能元件，所述第二功能元件与所述第一功能元件为不同的功能元件，即所述第二功能元件与所述第一功能元件的功能不同。\n\n[0069]具体的，第二功能元件也可以为指纹识别传感器、掌纹识别传感器、储能电容、天线等功能元件中的至少一种，但不同于第一功能元件。\n\n[0070]具体的，以第一功能元件31为指纹识别传感器，第二功能元件32为储能电容为例说明。如图6所示的显示面板102，功能元件组30包括第一功能元件31、第二功能元件32。第一功能元件31、第二功能元件32一块设置在对应的相邻的子像素单元21之间，也即像素2的非显示区。每个像素2内设置有一个指纹识别传感器和储能电容。\n\n[0071]具体的，功能元件组30设置在相邻的两行像素2之间。每个像素2包括三个子像素单元20，每个子像素单元20包括一个Micro LED芯片21，功能元件组30设置于像素2内未设置Micro LED芯片21的区域。\n\n[0072]进一步的，部分第一功能元件31复用为第一对位标记311。第一对位标记311的形状与未复用为第一对位标记的第一功能元件31及第二功能元件32的形状不同。\n\n[0073]具体的，如图6所示，在每个分区11内(图6示例性的示出了驱动背板10上的一个分区11)设置至少两个第一对位标记311。第一对位标记311为指纹识别传感器，同时复用为对位标记。第一对位标记311的形状为十字形，当然也可以设置为其他的mark形状。未复用为第一对位标记的第一功能元件31及第二功能元件32的形状为矩形。\n\n[0074]进一步的，第一对位标记311设置于分区11的两个对角侧，两个第一对位标记311关于分区11的中心对称。当然的，第一对位标记311也可以设置在分区的其他区域，能满足对位需求即可。\n\n[0075]进一步的，两个第一对位标记311也可以设置为不同的形状。\n\n[0076]具体的，储能电容可以为单层或者多层电极板的平板电容结构。储能电容的介电层材料包括氮化硅(SiNx)、氧化硅(SiOx)等无机材料或陶瓷材料钛酸钡、钛酸锶等或者金属钽等。\n\n[0077]进一步的，储能电容通过对应的电路与外围充电电路连接，在像素单元通电显示状态下同步进行充电，当断电后可以通过电荷转换单元反向给像素单元内不同的显示子像素供电，从而充当一定功能的储能电池用途，提升显示系统的续航能力。\n\n[0078]进一步的，为提升储能电容的电容大小，并避免电容讯号对显示子像素驱动电路的影响，储能电容设置于显示子像素及其驱动电路以外的区域。且储能电容的形状可以为任意异形形貌以最大化储能电容的大小。\n\n[0079]在本实施例中，把指纹识别传感器和储能电容同时集成在像素内，并把部分指纹识别传感器设计成Mark形状，在巨量转移时复用为对位标记。指纹识别传感器和储能电容在像素单元非显示区的设置位置、设置方式及形状不限于本揭示实施例示出的，其他说明请参照上述实施例，在此不再赘述。\n\n[0080]在一种实施例中，与上述实施例不同的是，所述第一功能元件复用为第一对位标记，所述第二功能元件复用为第二对位标记。所述第二对位标记的形状与所述第一功能元件的形状不同。\n\n[0081]具体的，如图7所示的显示面板103，部分第二功能元件32复用为第二对位标记321。在驱动背板10的分区11内，至少设置有一个第一对位标记311和一个第二对位标记321。第一功能元件31可以为指纹识别传感器，同时复用为第一对位标记。第二功能元件32可以为储能电容，同时复用为第二对位标记。\n\n[0082]具体的，第一对位标记311和第二对位标记321位于分区11的两对角侧。当然的第一对位标记311和第二对位标记321也可以设置在分区11的其他区域，能满足对位需求即可。\n\n[0083]进一步的，第二对位标记321的形状与第一功能元件31的形状不同，第二对位标记321的形状与未复用为第二对位标记的第二功能元件32的形状也不同。如图7所示，第二对位标记321的形状为方形，第一对位标记311的形状为十字形，当然的第一对位标记311和第二对位标记321的形状均不限于此，也可以为其他mark形状，且第一对位标记311和第二对位标记321的形状也可以相同。未复用为第一对位标记的第一功能元件31、及未复用为第二对位标记的第二功能元件32设置为规则的形状，如矩形等。\n\n[0084]具体的，第二对位标记321的形状包括圆形、方形、十字形等mark形状中的一种或几种的组合。\n\n[0085]进一步的，所述第二对位标记321的直径或边长大于30微米。\n\n[0086]可以理解的是，第二功能元件也可以全部复用为第二对位标记，第二功能元件的形状和第一功能元件的形状不同即可。其他说明请参照上述实施例，在此不再赘述。\n\n[0087]在一种实施例中，与上述实施例不同的是，所述第二功能元件和所述第一功能元件一块复用为第一对位标记。如图8所示的显示面板104，部分所述第二功能元件和第一功能元件一块复用为第一对位标记311。复用为第一对位标记311的第一功能元件和第二功能元件的形状均为半圆形，两个半圆组成近似的圆形作为第一对位标记311。其他未复用为第一对位标记的第一功能元件31和第二功能元件32设置为矩形等其他常规图形。其他说明请参照上述实施例，在此不再赘述。\n\n[0088]需要说明的是，本揭示的功能元件组不限于本揭示实施例示出的，本揭示的功能元件组还可以包括指纹识别传感器或掌纹识别传感器或与其他功能元件的组合，如与各种天线、存储单元等的组合。而且复用为对位标记的功能元件也不限于本揭示实施例示出的，以及对位标记的数量及设置位置不限于本揭示图示示出的，在此不再一一说明。\n\n[0089]在一种实施例中，提供一种显示面板的制备方法，其包括以下步骤：\n\n[0090]步骤S10、提供驱动背板，如图9所示，所述驱动背板10划分为多个分区11，每个所述分区11内设置有功能元件组30，所述功能元件组30包括第一功能元件31，其中一部分所述第一功能元件31复用为第一对位标记311，且所述第一对位标记311与另一部分所述第一功能元件31的形状不同。\n\n[0091]具体的，第一功能元件31包括指纹识别传感器、掌纹识别传感器、储能电容、天线等功能元件中的一种或多种。\n\n[0092]具体的，以第一功能元件31设置为指纹识别传感器为例说明。如图10所示，驱动背板10包括衬底12及设置于衬底12上的驱动电路层13。第一功能元件31设置在驱动电路层13上。驱动电路层13包括用于驱动Micro LED芯片的驱动电路(图未示)和用于驱动指纹识别传感器的驱动电路(图未示)。驱动电路采用包括基于α-Si、LTPS、IGZO等的主动阵列驱动技术或者被动阵列驱动技术实现。指纹识别传感器设置在对应的驱动电路上方。\n\n[0093]进一步的，驱动背板10上划分的分区11的数量等于需要的巨量转移次数。分区11的长和宽的尺寸范围为2厘米至3厘米，且每个分区11的尺寸大小相同，以便分区11之间采用统一方式进行对位、转移和绑定，从而简化制程。\n\n[0094]进一步的，在每个分区11内，至少有两个第一功能元件复用为第一对位标记311。第一对位标记311为指纹识别传感器，同时复用为对位标记。第一对位标记311的形状为十字形，当然也可以设置为其他的mark形状。未复用为第一对位标记的第一功能元件31设置为规则的形状，如矩形等。\n\n[0095]进一步的，第一对位标记311的Mark形状包括圆形、方形十字形等中的一种或几种的组合，如图9示出的第一对位标记311的形状为十字形。\n\n[0096]进一步的，每个分区11内的至少两个第一对位标记311设置于分区11的两个对角侧，两个第一对位标记311关于分区的中心对称。当然的，第一对位标记311也可以设置在分区的其他区域，能满足对位需求即可。\n\n[0097]进一步的，两个第一对位标记311的形状也可以不同，以提高对位的精准度。\n\n[0098]步骤S20、提供设置有Micro LED芯片的转移基板，以所述第一对位标记为参照把所述Micro LED芯片转移到所述分区内，并与所述驱动背板绑定。\n\n[0099]具体的，如图11所示，转移基板70上的Micro LED芯片21可以为红、绿、蓝三基色Micro LED芯片。或者为同色Micro LED芯片，并配合量子点膜或荧光粉实现显示三基色。\n\n[0100]进一步的，Micro LED芯片21可以为基底面出射或者电极面出射结构。\n\n[0101]进一步的，Micro LED芯片21的长宽范围为1微米至100微米，高度范围为1微米至20微米。\n\n[0102]具体的，以分区11内的第一对位标记311为参照，采用巨量转移技术把转移基板70上的Micro LED芯片21转移到对应的分区11内，并绑定到驱动背板10上，实现与驱动背板10上对应的驱动电路电性连接，形成如图12所示的下视结构示意图和图13所示的膜层结构侧视示意图。\n\n[0103]步骤S30、重复步骤S20，把所述Micro LED芯片分次转移到每个所述分区内。\n\n[0104]具体的，采用统一的巨量转移方式进行对位、转移和绑定，把所述Micro LED芯片21分次转移到驱动背板10上的每个所述分区11内，形成如图14所示的下视结构示意图和图15所示的膜层结构侧视示意图。\n\n[0105]步骤S40、剥离掉所述转移基板，形成如图16所示的结构。\n\n[0106]步骤S50、在所述Micro LED芯片及所述功能元件上制备封装层40，形成如图17所示的结构。\n\n[0107]具体的，完成对所有分区的巨量转移后，在Micro LED芯片及指纹识别传感器上制备一层封装层。封装层为高段差吸收封装层，用于平衡各个Micro LED芯片间的段差，同时保护Micro LED芯片，避免水氧入侵。\n\n[0108]进一步的，在封装层上制备光路层，并在光路层上设置透光区。透光区与指纹识别传感器一一对应，如图3所示。\n\n[0109]在一种实施例中，提供一种显示装置，如图18所示，显示装置1000包括上述实施例其中之一的显示面板101、及设置在显示面板101上的透明贴合层200及盖板300。其中显示面板101包括驱动背板10、设置在驱动背板10上的Micro LED芯片21及第一功能元件31、及封装层40、光路层50及光路层50上设置的透光区51，其中第一功能元件31复用为第一对位标记。\n\n[0110]根据上述实施例可知：\n\n[0111]本揭示提供一种显示面板及其制备方法以及显示装置，显示面板包括驱动背板、设置在驱动背板上的功能元件组和对位标记、绑定在驱动背板上的Micro LED芯片、及设置在Micro LED芯片和功能元件组上的封装层。功能元件组集成在像素单元内未设置MicroLED芯片的区域，且部分功能元件设置为易于识别的形状作为对位标记。把功能元件集成到像素单元内，提高了显示面板的集成度。且部分功能元件的形状做成对位Mark的形状，在巨量转移时可以复用为对位Mark。其余不做Mark复用的功能元件保持面积最大化设计。如此不需要占用额外的像素空间单独制作巨量转移对位Mark，可保证集成功能元件面积的最大化。而且可加大各显示子像素的设计自由度，利于提高显示子像素的空间，进而实现高PPI显示。\n\n[0112]综上所述，虽然本揭示已以优选实施例揭露如上，但上述优选实施例并非用以限制本揭示，本领域的普通技术人员，在不脱离本揭示的精神和范围内，均可作各种更动与润饰，因此本揭示的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10817, 23871, '技术领域\n\n[0001]本发明涉及显示器件领域，特别是一种显示面板。\n\n背景技术\n\n[0002]手机、平板电脑等智能终端由于其集便利性、娱乐性、功能多样性于一体的特点，越来越成为人们日常生活中不可获缺的一部分，但是，随着显示技术的不断发展，更多更先进的技术在智能终端上的应用，大大地丰富了人们的生活；但是，与此同时，人们对智能终端的要求和期望也越来越高，人们在享受手机、平板电脑等智能终端带来的基础性功能的同时，也对智能终端提出了更高的要求，如智能终端的全面屏设计。\n\n[0003]全面屏技术，是显示业界对于超高屏占比手机设计的一个比较宽泛的定义。从字面上解释就是手机的正面全部都是屏幕，手机的显示界面被屏幕完全覆盖，手机的四个边框位置都是采用无边框设计，追求接近100％的超高屏占比。但受限于前置摄像头、听筒、距离传感器和光线传感器等其他手机不可或缺的基本功能需要。目前，对于屏下摄像头处兼顾显示的全面屏设计方案中出现了拼接显示的技术，在需要为屏下设备透光的地方使用OLED(OrganicLight-Emitting Diode，有机电激光显示)显示技术。OLED显示技术相对于LCD(Liquid Crystal Display，液晶显示器)显示技术有天然的优势，但是OLED也受限于其像素结构，其像素无法做到高精细，因此会影响透光处的整体透率，最终影响屏下设备的成像质量。\n\n发明内容\n\n[0004]本发明的目的是提供一种显示面板，也解决现有技术中透光显示的像素大小与正常显示的像素大小不一致所导致显示画面出现差异，影响显示效果。\n\n[0005]为实现上述目的，本发明提供一种显示面板，所述显示面板包括液晶显示层以及透光显示层。所述液晶显示层具有一透光孔。所述透光显示层设于所述透光孔内。\n\n[0006]其中，所述透光显示层内分布有若干第一像素，所述液晶显示层内分布有若干第二像素。靠近所述液晶显示层的第一像素的尺寸小于远离所述液晶显示层的第一像素的尺寸。和/或远离所述透光显示层的第二像素的尺寸小于靠近所述透光显示层的第二像素的尺寸。\n\n[0007]进一步地，当靠近所述液晶显示层的第一像素的尺寸小于远离所述液晶显示层的第一像素的尺寸时，所述透光显示层具有第一常规区以及围绕所述第一常规区的第一过渡区。\n\n[0008]所述第一像素包括第一常规像素以及第一过渡像素。所述第一常规像素设于所述第一常规区内。所述第一过渡像素设于所述第一过渡区内，其尺寸小于所述第一常规像素的尺寸。\n\n[0009]进一步地，所述透光显示层还具有至少一个第二过渡区，位于所述第一过渡像素和所述第一常规区之间。所述第一像素还包括第二过渡像素，所述第二过渡像素设于所述第二过渡区内，其尺寸大于所述第一过渡像素的尺寸并小于所述第一常规像素的尺寸。\n\n[0010]进一步地，当远离所述透光显示层的第二像素的尺寸小于靠近所述透光显示层的第二像素的尺寸时，所述液晶显示层中具有第三过渡区以及围绕所述第三过渡区的第二常规区。\n\n[0011]所述第二像素包括第二常规像素以及第三过渡像素。所述第二常规像素设于所述第二常规区内。所述第三过渡像素设于所述第三过渡区内，其尺寸大于所述第二常规像素的尺寸，并等于所述第一像素的尺寸。\n\n[0012]进一步地，所述液晶显示层中还具有至少一个第四过渡区，位于所述第三过渡区与所述第二常规区之间。所述第二像素还包括第四过渡像素，所述第四过渡像素设于所述第四过渡区内，其尺寸大于所述第二常规像素的尺寸，并小于所述第三过渡像素的尺寸。\n\n[0013]进一步地，所述透光显示层具有一主体部以及围绕所述主体部的延伸部，所述延伸部从所述透光孔延伸至所述液晶显示层内。在所述延伸部内，所述第一像素的尺寸等于所述第二像素的尺寸。\n\n[0014]进一步地，所述第一像素包括第一红色像素、第一绿色像素以及第一蓝色像素，并依次排列在所述透光显示层中。所述第二像素包括第二红色像素、第二绿色像素以及第二蓝色像素，并依次排列在所述液晶显示层中。其中，在所述延伸部内，所述第一红色像素对应于所述第二红色像素，所述第一绿色像素对应于所述第二绿色像素，所述第一蓝色像素对应于所述第二蓝色像素。\n\n[0015]进一步地，还包括一支撑层，设于所述透光显示层上。\n\n[0016]进一步地，每一第一像素中具有一发光区以及与所述发光区连接的透光区。所述发光区内具有至少一个Micro-LED芯片。\n\n[0017]进一步地，所述Micro-LED芯片为单色芯片或三色芯片中的一种。\n\n[0018]本发明的优点是：本发明的一种显示面板通过将其透光显示层与液晶显示层拼接处的像素大小逐渐减小或增大，使透光显示层与液晶显示层拼接处的像素大小自然过渡，改善由于像素大小不一致而产生的画面差异，提高全面屏的显示效果。并且还利于液晶显示层与透光显示层的拼接，更加容易实现拼接处的窄边框设计。\n\n附图说明\n\n[0019]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0020]图1为本发明实施例1中显示面板的层状结构示意图；\n\n[0021]图2为本发明实施例1-4中第一像素的平面结构示意图；\n\n[0022]图3为本发明实施例1、4中显示面板的像素分布示意图；\n\n[0023]图4为本发明实施例2中显示面板的层状结构示意图；\n\n[0024]图5为本发明实施例2中显示面板的像素分布示意图；\n\n[0025]图6为本发明实施例3中显示面板的层状结构示意图；\n\n[0026]图7为本发明实施例4中显示面板的层状结构示意图。\n\n[0027]图中部件表示如下：\n\n[0028]显示面板1；\n\n[0029]液晶显示层100；透光孔101；\n\n[0030]第二常规区102；第三过渡区103；\n\n[0031]第四过渡区105；液晶层110；\n\n[0032]色阻层120；第二像素121；\n\n[0033]第二常规像素121A；第三过渡像素121B；\n\n[0034]第四过渡像素121C；第二红色像素121D；\n\n[0035]第二绿色像素121E；第二蓝色像素121F；\n\n[0036]彩膜基板130；阵列基板140；\n\n[0037]偏光片150；框胶160；\n\n[0038]透光显示层200；第一常规区201；\n\n[0039]第一过渡区202；第二过渡区203；\n\n[0040]第一像素210；发光区211；\n\n[0041]透光区212；Micro-LED芯片213；\n\n[0042]第一常规像素210A；第一过渡像素210B；\n\n[0043]第二过渡像素210C；第一红色像素210D；\n\n[0044]第一绿色像素210E；第一蓝色像素210F；\n\n[0045]主体部220；延伸部230；\n\n[0046]支撑层240；背光模组300；\n\n[0047]屏下传感器400。\n\n具体实施方式\n\n[0048]以下参考说明书附图介绍本发明的优选实施例，证明本发明可以实施，所述发明实施例可以向本领域中的技术人员完整介绍本发明，使其技术内容更加清楚和便于理解。本发明可以通过许多不同形式的发明实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例。\n\n[0049]在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。附图所示的每一部件的尺寸和厚度是任意示出的，本发明并没有限定每个组件的尺寸和厚度。为了使图示更清晰，附图中有些地方适当夸大了部件的厚度。\n\n[0050]此外，以下各发明实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定发明实施例。本发明中所提到的方向用语，例如，“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”、“侧面”等，仅是参考附加图式的方向，因此，使用的方向用语是为了更好、更清楚地说明及理解本发明，而不是指示或暗指所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”、“第三”等仅用于描述目的，而不能理解为指示或暗示相对重要性。\n\n[0051]当某些部件被描述为“在”另一部件“上”时，所述部件可以直接置于所述另一部件上；也可以存在一中间部件，所述部件置于所述中间部件上，且所述中间部件置于另一部件上。当一个部件被描述为“安装至”或“连接至”另一部件时，二者可以理解为直接“安装”或“连接”，或者一个部件通过一中间部件间接“安装至”、或“连接至”另一个部件。\n\n[0052]实施例1\n\n[0053]本发明实施例中提供了一种显示面板1，如图1所示，所述显示面板1具有一液晶显示层100、一透光显示层200、一背光模组300以及一屏下传感器400。所述液晶显示层100中具有一透光孔101，所述透光孔101为通孔或盲孔，优选地，在本发明实施例中，所述透光孔101为盲孔。所述屏下传感器400设于所述液晶显示层100的下方，并对应于所述透光孔101。所述背光模组300与所述屏下传感器400设于所述液晶显示层100的同一侧，并围绕所述屏下传感器400。\n\n[0054]所述液晶显示层100中包括一液晶层110、一色阻层120、一彩膜基板130、一阵列基板140以及两层偏光片150。所述液晶层110中填充有液晶。所述色阻层120设于所述液晶层110的一表面上，其分布有若干第二像素121，每一第二像素121的尺寸均一致。所述阵列基板140设于所述液晶层110远离所述色阻层120的一表面上。所述彩膜基板130设于所述色阻层120远离所述液晶层110的一表面上。两层偏光片150分别所述彩膜基板130和所述阵列基板140远离所述液晶层110的一表面上。其中，所述液晶层110、所述色阻层120和两层偏光片150对应所述透光孔101处均一过孔。所述液晶显示层100中还具有一框胶160，所述框胶160设于所述液晶层110的过孔孔壁上，并围绕所述透光孔101，其用于封装所述液晶层110。\n\n[0055]所述液晶层110中的液晶是介于固态和液态间的特殊物质，它是一种有机化合物，常态下呈液态，但是它的分子排列却和固体晶体一样非常规则，因此取名液晶，它的另一个特殊性质在于，在电场作用下，液晶分子会发生排列上的变化，从而影响通过其的光线变化，这种光线的变化通过偏光片150的作用可以表现为明暗的变化。所述阵列基板140设于所述液晶层110的一表面上，其用于提供电场，并对电场进行控制，从而控制液晶分子的排列方向，改变所述液晶层110的透光率，最终达到显示图像的目的。再配合色阻层120和彩膜基板130，将所述液晶层110中的光线进行过滤，精确选择欲通过的小范围波段光波，而反射掉其他不希望通过的波段，使光线呈现出不同的颜色，从而实现彩色图像显示。\n\n[0056]所述透光显示层200设于所述透光孔101中的阵列基板140上，并位于所述液晶层110和所述色阻层120的过孔中。所述透光显示层200中排布有若干第一像素210。所述透光显示层200采用Micro-LED显示技术，如图2所示，每一第一像素210中均具有一发光区211和连接所述发光区211的透光区212。在所述发光区211内设有一Micro-LED芯片213，所述Micro-LED芯片213为单色芯片，其可以发出红光、绿光或蓝光中的一种。当所述透光显示层200需要显示画面时，每一第一像素210发光区211内的Micro-LED芯片213通过其自发光功能实现正常的显示，与液晶显示层100的显示画面衔接，从而实现全面屏显示。当所述透光显示层200需要为屏下传感器400提供透光通道，每一第一像素210发光区211内的Micro-LED芯片213不发光，屏下传感器400通过所述透光区212进行光线采集并成像，从而实现屏下传感。\n\n[0057]如图3所示，所述透光显示层200中还具有一第一常规区201、一第一过渡区202以及一第二过渡区203。所述第一过度区围绕所述第一常规区201，所述第二过渡区203位于所述第一常规区201和所述第一过渡区202之间。所述第一常规区201位于所述透光显示层200的中心位置，所述第一过渡区202位于所述透光显示层200靠近所述液晶显示层100的边缘处。\n\n[0058]所述第一像素210包括第一常规像素210A、第一过渡像素210B以及第二过渡像素210C。所述第一常规像素210A设于所述第一常规区201内，所述第一过渡像素210B设于所述第一过渡区202内，所述第二过渡像素210C设于所述第二过渡区203内。在所述第一过渡区202内排布有1-3圈的第一过渡像素210B，具体的，在本实施例中，所述第一过渡区202内排布有3圈第一过渡像素210B。\n\n[0059]所述第一过渡像素210B的尺寸小于所述第一常规像素210A的尺寸，并等于所述液晶显示层100中第二像素121的尺寸。所述第二过渡像素210C的尺寸位于所述第一常规像素210A和所述第一过渡像素210B的尺寸之间。其中，所述第一常规像素210A透光区212面积大于所述第一过渡像素210B的透光区212面积，所述第二过渡像素210C的透光区212面积也大于所述第一过渡像素210B的透光区212面积。所述第一常规区201、所述第二过渡区203和所述第一过渡区202内第一像素210的尺寸根据分区依次减小，最终达到与所述第二像素121相同的尺寸，从而改善液晶显示层100和透光显示层200由于像素大小不同而产生的显示画面差异，提高显示画面的美感。\n\n[0060]在本发明实施例中，所述透光显示层200具有一个第二过渡区203，但在本发明的其他实施例中，所述透光显示层200还可以具有两个以及两个以上的第二过渡区203，从而实现更加细腻的像素大小的渐变效果，其层状结构与本发明实施例中的透光显示层200相似，因此不在此做过多赘述。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其它实施例，都属于本申请保护的范围。\n\n[0061]所述显示面板1中还具有一支撑层240，所述支撑层240设于所述透光显示层200和所述彩膜基板130之间，其用于为所述彩膜基板130提供支撑力，防止彩膜基板130由于透光显示层200和液晶显示层100的段差而出现裂痕。所述支撑层240中均匀分布了若干支撑柱或填充了透明光学胶，具体的，在本实施例中所述支撑层240采用了支撑柱方案。\n\n[0062]在本发明实施例中，所述显示面板1通过将其透光显示层200中的第一像素210的尺寸根据与液晶显示层100的距离逐渐减小至等于液晶显示层100中第二像素121的尺寸，从而使透光显示层200与液晶显示层100拼接处的像素大小自然过渡，改善由于像素大小不一致而产生的画面差异，提高全面屏的显示效果。并且还利于液晶显示层100与透光显示层200的拼接，更加容易实现窄边框设计。\n\n[0063]实施例2\n\n[0064]本发明实施例中提供了一种显示面板1，如图4所示，所述显示面板1具有一液晶显示层100、一透光显示层200、一背光模组300以及一屏下传感器400。所述液晶显示层100中具有一透光孔101，所述透光孔101为通孔或盲孔，优选地，在本发明实施例中，所述透光孔101为盲孔。所述屏下传感器400设于所述液晶显示层100的下方，并对应于所述透光孔101。所述背光模组300与所述屏下传感器400设于所述液晶显示层100的同一侧，并围绕所述屏下传感器400。\n\n[0065]所述液晶显示层100中包括一液晶层110、一色阻层120、一彩膜基板130、一阵列基板140以及两层偏光片150。所述液晶层110中填充有液晶。所述色阻层120设于所述液晶层110的一表面上。所述阵列基板140设于所述液晶层110远离所述色阻层120的一表面上。所述彩膜基板130设于所述色阻层120远离所述液晶层110的一表面上。两层偏光片150分别所述彩膜基板130和所述阵列基板140远离所述液晶层110的一表面上。其中，所述液晶层110、所述色阻层120和两层偏光片150对应所述透光孔101处均一过孔。所述液晶显示层100中还具有一框胶160，所述框胶160设于所述液晶层110的过孔孔壁上，并围绕所述透光孔101，其用于封装所述液晶层110。\n\n[0066]所述液晶层110中的液晶是介于固态和液态间的特殊物质，它是一种有机化合物，常态下呈液态，但是它的分子排列却和固体晶体一样非常规则，因此取名液晶，它的另一个特殊性质在于，在电场作用下，液晶分子会发生排列上的变化，从而影响通过其的光线变化，这种光线的变化通过偏光片150的作用可以表现为明暗的变化。所述阵列基板140设于所述液晶层110的一表面上，其用于提供电场，并对电场进行控制，从而控制液晶分子的排列方向，改变所述液晶层110的透光率，最终达到显示图像的目的。再配合色阻层120和彩膜基板130，将所述液晶层110中的光线进行过滤，精确选择欲通过的小范围波段光波，而反射掉其他不希望通过的波段，使光线呈现出不同的颜色，从而实现彩色图像显示。\n\n[0067]所述透光显示层200设于所述透光孔101中的阵列基板140上，并位于所述液晶层110和所述色阻层120的过孔中。所述透光显示层200中排布有若干第一像素210。所述透光显示层200采用Micro-LED显示技术，如图2所示，每一第一像素210中均具有一发光区211和连接所述发光区211的透光区212。在所述发光区211内设有一Micro-LED芯片213，所述Micro-LED芯片213为单色芯片，其可以发出红光、绿光或蓝光中的一种。当所述透光显示层200需要显示画面时，每一第一像素210发光区211内的Micro-LED芯片213通过其自发光功能实现正常的显示，与液晶显示层100的显示画面衔接，从而实现全面屏显示。当所述透光显示层200需要为屏下传感器400提供透光通道，每一第一像素210发光区211内的Micro-LED芯片213不发光，屏下传感器400通过所述透光区212进行光线采集并成像，从而实现屏下传感。\n\n[0068]如图5所示，所述液晶显示层100中中还具有一第二常规区102、一第三过渡区103以及一第四过渡区105。所述第三过度区围绕所述透光孔101，所述第二常规区102围绕所述第三过渡区103，所述第四过渡设于所述第二常规区102和所述第三过渡区103之间。\n\n[0069]所述色阻层120中排布有若干第二像素121，所述第二像素121中包括第二常规像素121A、第三过渡像素121B以及第四过渡像素121C。所述第二常规像素121A设于所述第二常规区102内，所述第三过渡像素121B设于所述第三过渡区103内，所述第四过渡像素121C设于所述第四过渡区105内。\n\n[0070]所述第二常规像素121A的尺寸小于所述第三过渡像素121B的尺寸，所述第三过渡像素121B的尺寸等于所述液晶显示层100中第一像素210的尺寸。所述第四过渡像素121C的尺寸位于所述第二常规像素121A和所述第三过渡像素121B的尺寸之间。所述第二常规区102、所述第三过渡区103和所述第四过渡区105内的第二像素121的尺寸根据分区依次增大，最终达到与所述第一像素210相同的尺寸，从而改善液晶显示层100和透光显示层200由于像素大小不同而产生的显示画面差异，提高显示画面的美感。\n\n[0071]在本发明实施例中，所述透光显示层200具有一个第四过渡区105，但在本发明的其他实施例中，所述透光显示层200还可以具有两个以及两个以上的第四过渡区105，从而实现更加细腻的像素大小的渐变效果，其层状结构与本发明实施例中的液晶显示层100相似，因此不在此做过多赘述。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其它实施例，都属于本申请保护的范围。\n\n[0072]所述显示面板1中还具有一支撑层240，所述支撑层240设于所述透光显示层200和所述彩膜基板130之间，其用于为所述彩膜基板130提供支撑力，防止彩膜基板130由于透光显示层200和液晶显示层100的段差而出现裂痕。所述支撑层240中均匀分布了若干支撑柱或填充了透明光学胶，具体的，在本实施例中所述支撑层240采用了支撑柱方案。\n\n[0073]在本发明实施例中，所述显示面板1通过将其液晶显示层100中第二像素121的尺寸根据与透光显示层200的距离逐渐增大至等于液晶显示层100中第二像素121的尺寸，从而使液晶显示层100与透光显示层200拼接处的像素大小自然过渡，改善由于像素大小不一致而产生的画面差异，提高全面屏的显示效果。并且还利于液晶显示层100与透光显示层200的拼接，更加容易实现窄边框设计。\n\n[0074]实施例3\n\n[0075]本发明实施例中提供了一种显示面板1，如图6所示，所述显示面板1具有一液晶显示层100、一透光显示层200、一背光模组300以及一屏下传感器400。所述液晶显示层100中具有一透光孔101，所述透光孔101为通孔或盲孔，优选地，在本发明实施例中，所述透光孔101为盲孔。所述屏下传感器400设于所述液晶显示层100的下方，并对应于所述透光孔101。所述背光模组300与所述屏下传感器400设于所述液晶显示层100的同一侧，并围绕所述屏下传感器400。\n\n[0076]所述液晶显示层100中包括一液晶层110、一色阻层120、一彩膜基板130、一阵列基板140以及两层偏光片150。所述液晶层110中填充有液晶。所述色阻层120设于所述液晶层110的一表面上，其分布有若干第二像素121，每一第二像素121的尺寸均一致。所述第二像素121包括若干第二红色像素121D、若干第二绿色像素121E以及若干第二蓝色像素121F，所述第二红色像素121D、所述第二绿色像素121E以及所述第二蓝色像素121F依次排列在所述色阻层120中。所述阵列基板140设于所述液晶层110远离所述色阻层120的一表面上。所述彩膜基板130设于所述色阻层120远离所述液晶层110的一表面上。两层偏光片150分别所述彩膜基板130和所述阵列基板140远离所述液晶层110的一表面上。其中，所述液晶层110、所述色阻层120和两层偏光片150对应所述透光孔101处均一过孔。所述液晶显示层100中还具有一框胶160，所述框胶160设于所述液晶层110的过孔孔壁上，并围绕所述透光孔101，其用于封装所述液晶层110。\n\n[0077]所述液晶层110中的液晶是介于固态和液态间的特殊物质，它是一种有机化合物，常态下呈液态，但是它的分子排列却和固体晶体一样非常规则，因此取名液晶，它的另一个特殊性质在于，在电场作用下，液晶分子会发生排列上的变化，从而影响通过其的光线变化，这种光线的变化通过偏光片150的作用可以表现为明暗的变化。所述阵列基板140设于所述液晶层110的一表面上，其用于提供电场，并对电场进行控制，从而控制液晶分子的排列方向，改变所述液晶层110的透光率，最终达到显示图像的目的。再配合色阻层120和彩膜基板130，将所述液晶层110中的光线进行过滤，精确选择欲通过的小范围波段光波，而反射掉其他不希望通过的波段，使光线呈现出不同的颜色，从而实现彩色图像显示。\n\n[0078]所述透光显示层200设于所述透光孔101中的阵列基板140上，并位于所述液晶层110和所述色阻层120的过孔中。所述透光显示层200中排布有若干第一像素210。所述透光显示层200采用Micro-LED显示技术，如图2所示，每一第一像素210中均具有一发光区211和连接所述发光区211的透光区212。在所述发光区211内设有一Micro-LED芯片213，所述Micro-LED芯片213为三色芯片，其通过时序控制，单个芯片就能分时分别发出红色、绿色和蓝色三种颜色的光，从而实现彩色显示。当所述透光显示层200需要显示画面时，每一第一像素210发光区211内的Micro-LED芯片213通过其自发光功能实现正常的显示，与液晶显示层100的显示画面衔接，从而实现全面屏显示。当所述透光显示层200需要为屏下传感器400提供透光通道，每一第一像素210发光区211内的Micro-LED芯片213不发光，屏下传感器400通过所述透光区212进行光线采集并成像，从而实现屏下传感。\n\n[0079]所述透光显示层200中还具有一第一常规区201、一第一过渡区202以及一第二过渡区203。所述第一过度区围绕所述第一常规区201，所述第二过渡区203位于所述第一常规区201和所述第一过渡区202之间。所述第一常规区201位于所述透光显示层200的中心位置，所述第一过渡区202位于所述透光显示层200靠近所述液晶显示层100的边缘处。\n\n[0080]所述第一像素210包括第一常规像素210A、第一过渡像素210B以及第二过渡像素210C。所述第一常规像素210A设于所述第一常规区201内，所述第一过渡像素210B设于所述第一过渡区202内，所述第二过渡像素210C设于所述第二过渡区203内。在所述第一过渡区202内排布有1-3圈的第一过渡像素210B，具体地，在本实施例中，所述第一过渡区202内排布有1圈第一过渡像素210B。并且在所述第二过渡区203内也排布了1圈第二过渡像素210C。其中，所述第一过渡区202和所述第二过渡区203均为环形，并且所述第一过渡区202的环宽等于所述第一过渡像素210B的宽度，所述第二过渡区203的环宽等于第二过渡像素210C的宽度。\n\n[0081]所述第一过渡像素210B的尺寸小于所述第一常规像素210A的尺寸，并且所述第一过渡像素210B的宽度等于所述液晶显示层100中所述第二红色像素121D、所述第二绿色像素121E和所述第二蓝色像素121F的宽度之和。所述第二过渡像素210C的尺寸位于所述第一常规像素210A和所述第一过渡像素210B的尺寸之间。其中，所述第一常规像素210A透光区212面积大于所述第一过渡像素210B的透光区212面积，所述第二过渡像素210C的透光区212面积也大于所述第一过渡像素210B的透光区212面积。所述第一常规区201、所述第二过渡区203和所述第一过渡区202内第一像素210的尺寸根据分区依次减小，最终达到其拼接处的像素尺寸与液晶显示层100中的三色像素的大小总和相近的效果，从而改善液晶显示层100和透光显示层200由于像素大小不同而产生的显示画面差异，提高显示画面的美感。\n\n[0082]在本发明实施例中，所述透光显示层200具有一个第二过渡区203，但在本发明的其他实施例中，所述透光显示层200还可以具有两个以及两个以上的第二过渡区203，从而实现更加细腻的像素大小的渐变效果，其层状结构与本发明实施例中的透光显示层200相似，因此不在此做过多赘述。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其它实施例，都属于本申请保护的范围。\n\n[0083]所述显示面板1中还具有一支撑层240，所述支撑层240设于所述透光显示层200和所述彩膜基板130之间，其用于为所述彩膜基板130提供支撑力，防止彩膜基板130由于透光显示层200和液晶显示层100的段差而出现裂痕。所述支撑层240中均匀分布了若干支撑柱或填充了透明光学胶，具体的，在本实施例中所述支撑层240采用了透明光学胶方案。\n\n[0084]在本发明实施例中，所述显示面板1通过将其透光显示层200中的第一像素210的尺寸根据与液晶显示层100的距离逐渐减小至与液晶显示层100中三色第二像素121的大小总和相接近，从而使透光显示层200与液晶显示层100拼接处的像素大小自然过渡，改善由于像素大小不一致而产生的画面差异，提高全面屏的显示效果。并且还利于液晶显示层100与透光显示层200的拼接，更加容易实现窄边框设计。相较于实施例1和实施例2，其透光显示层200采用三色芯片，从而使其发光区211总面积更小，透光区212的总面积更大，拥有更好的透光效果。\n\n[0085]实施例4\n\n[0086]本发明实施例中提供了一种显示面板1，如图7所示，所述显示面板1具有一液晶显示层100、一透光显示层200、一背光模组300以及一屏下传感器400。所述液晶显示层100中具有一透光孔101，所述透光孔101为通孔或盲孔，优选地，在本发明实施例中，所述透光孔101为盲孔。所述屏下传感器400设于所述液晶显示层100的下方，并对应于所述透光孔101。所述背光模组300与所述屏下传感器400设于所述液晶显示层100的同一侧，并围绕所述屏下传感器400。\n\n[0087]所述液晶显示层100中包括一液晶层110、一色阻层120、一彩膜基板130、一阵列基板140以及两层偏光片150。所述液晶层110中填充有液晶。所述色阻层120设于所述液晶层110的一表面上，其分布有若干第二像素121，每一第二像素121的尺寸均一致。所述第二像素121包括若干第二红色像素121D、若干第二绿色像素121E以及若干第二蓝色像素121F，所述第二红色像素121D、所述第二绿色像素121E以及所述第二蓝色像素121F依次排列在所述色阻层120中。所述阵列基板140设于所述液晶层110远离所述色阻层120的一表面上。所述彩膜基板130设于所述色阻层120远离所述液晶层110的一表面上。两层偏光片150分别所述彩膜基板130和所述阵列基板140远离所述液晶层110的一表面上。其中，所述液晶层110、所述色阻层120和两层偏光片150对应所述透光孔101处均一过孔。\n\n[0088]所述液晶层110中的液晶是介于固态和液态间的特殊物质，它是一种有机化合物，常态下呈液态，但是它的分子排列却和固体晶体一样非常规则，因此取名液晶，它的另一个特殊性质在于，在电场作用下，液晶分子会发生排列上的变化，从而影响通过其的光线变化，这种光线的变化通过偏光片150的作用可以表现为明暗的变化。所述阵列基板140设于所述液晶层110的一表面上，其用于提供电场，并对电场进行控制，从而控制液晶分子的排列方向，改变所述液晶层110的透光率，最终达到显示图像的目的。再配合色阻层120和彩膜基板130，将所述液晶层110中的光线进行过滤，精确选择欲通过的小范围波段光波，而反射掉其他不希望通过的波段，使光线呈现出不同的颜色，从而实现彩色图像显示。\n\n[0089]所述透光显示层200设于所述透光孔101中的阵列基板140上，并位于所述液晶层110和所述色阻层120的过孔中。所述透光显示层200中排布有若干第一像素210。所述透光显示层200采用Micro-LED显示技术，如图2所示，每一第一像素210中均具有一发光区211和连接所述发光区211的透光区212。在所述发光区211内设有一Micro-LED芯片213，所述Micro-LED芯片213为单色芯片，其可以发出红光、绿光或蓝光中的一种。当所述透光显示层200需要显示画面时，每一第一像素210发光区211内的Micro-LED芯片213通过其自发光功能实现正常的显示，与液晶显示层100的显示画面衔接，从而实现全面屏显示。当所述透光显示层200需要为屏下传感器400提供透光通道，每一第一像素210发光区211内的Micro-LED芯片213不发光，屏下传感器400通过所述透光区212进行光线采集并成像，从而实现屏下传感。\n\n[0090]所述透光显示层200具有一主体部220以及一延伸部230。所述主体部220对应于所述透光孔101，如图3所示，所述主体部220中具有一第一常规区201、一第一过渡区202以及一第二过渡区203。所述第一过度区围绕所述第一常规区201，所述第二过渡区203位于所述第一常规区201和所述第一过渡区202之间。所述第一常规区201位于所述主体部220的中心位置，所述第一过渡区202位于所述主体部220靠近所述液晶显示层100的边缘处。所述延伸部230围绕所述主体部220，并从所述透光孔101衍生至所述液晶显示层100内，位于所述色阻层120和所述阵列基板140之间，所述液晶层110围绕所述延伸部230的侧面。\n\n[0091]所述第一像素210根据尺寸大小可分为第一常规像素210A、第一过渡像素210B以及第二过渡像素210C。所述第一常规像素210A设于所述第一常规区201和所述延伸部230内，所述第一过渡像素210B设于所述第一过渡区202内，所述第二过渡像素210C设于所述第二过渡区203内。在所述第一过渡区202和所述延伸部230内排布有1-3圈的第一过渡像素210B，具体的，在本实施例中，所述第一过渡区202和所述延伸部230内排布有3圈第一过渡像素210B。在所述第一过渡区202或所述延伸部230内，每一圈的第一过渡像素210B的发光颜色均不同。其中，所述第一像素210根据发光颜色可分为第一红色像素210D、第一绿色像素210E以及第一蓝色像素210F，所述第一红色像素210D、所述第一绿色像素210E以及所述第一蓝色像素210F依次排布在所述透光显示层200中。并且，如图7所示，在所述延伸部230内，所述第一红色像素210D对应于所述第二红色像素121D，所述第一绿色像素210E对应于所述第二绿色像素121E，所述第一蓝色像素210F对应于所述第二蓝色像素121F。所述延伸部230中的第一像素210的颜色与所述色阻层120中的第二像素121的颜色一一对应，当面板组装发生偏移时，所述色阻层120还可以起到滤光的作用，吸收由于组装偏移而发生的相邻颜色的散射问题，从而改善画面显示。\n\n[0092]所述第一过渡像素210B的尺寸小于所述第一常规像素210A的尺寸，并等于所述液晶显示层100中第二像素121的尺寸。所述第二过渡像素210C的尺寸位于所述第一常规像素210A和所述第一过渡像素210B的尺寸之间。其中，所述第一常规像素210A透光区212面积大于所述第一过渡像素210B的透光区212面积，所述第二过渡像素210C的透光区212面积也大于所述第一过渡像素210B的透光区212面积。所述第一常规区201、所述第二过渡区203和所述第一过渡区202内第一像素210的尺寸根据分区依次减小，最终达到与所述第二像素121相同的尺寸，从而改善液晶显示层100和透光显示层200由于像素大小不同而产生的显示画面差异，提高显示画面的美感。\n\n[0093]在本发明实施例中，所述透光显示层200具有一个第二过渡区203，但在本发明的其他实施例中，所述透光显示层200还可以具有两个以及两个以上的第二过渡区203，从而实现更加细腻的像素大小的渐变效果，其层状结构与本发明实施例中的透光显示层200相似，因此不在此做过多赘述。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其它实施例，都属于本申请保护的范围。\n\n[0094]所述显示面板1中还具有一支撑层240，所述支撑层240设于所述透光显示层200和所述彩膜基板130之间，并也延伸至所述透光显示层200的延伸部230与所述液晶显示层100的色阻层120之间，所述液晶层110同时围绕所述支撑层240和所述透光显示层200延伸部230的侧面。所述支撑层240用于为所述彩膜基板130提供支撑力，防止彩膜基板130由于透光显示层200和液晶显示层100的段差而出现裂痕。所述支撑层240中均匀分布了若干支撑柱或填充了透明光学胶，具体的，在本实施例中所述支撑层240采用了透明光学胶方案。\n\n[0095]在本发明实施例中，所述显示面板1通过将其透光显示层200中的第一像素210的尺寸根据与液晶显示层100的距离逐渐减小至等于液晶显示层100中第二像素121的尺寸，从而使透光显示层200与液晶显示层100拼接处的像素大小自然过渡，改善由于像素大小不一致而产生的画面差异，提高全面屏的显示效果。并且还利于液晶显示层100与透光显示层200的拼接，更加容易实现窄边框设计。相较于实施例1、实施例2以及实施例3，本发明实施例中的透光显示层200延伸至里液晶显示层100中，降低了组装难度，改善了因为组装偏差而导致的显示不均匀，并且拼接位置的边框可以做到更窄。\n\n[0096]虽然在本文中参照了特定的实施方式来描述本发明，但是应该理解的是，这些实施例仅仅是本发明的原理和应用的示例。因此应该理解的是，可以对示例性的实施例进行许多修改，并且可以设计出其他的布置，只要不偏离所附权利要求所限定的本发明的精神和范围。应该理解的是，可以通过不同于原始权利要求所描述的方式来结合不同的从属权利要求和本文中所述的特征。还可以理解的是，结合单独实施例所描述的特征可以使用在其他所述实施例中。', '技术领域\n\n[0001]本发明涉及显示器件领域，特别是一种显示面板。\n\n背景技术\n\n[0002]手机、平板电脑等智能终端由于其集便利性、娱乐性、功能多样性于一体的特点，越来越成为人们日常生活中不可获缺的一部分，但是，随着显示技术的不断发展，更多更先进的技术在智能终端上的应用，大大地丰富了人们的生活；但是，与此同时，人们对智能终端的要求和期望也越来越高，人们在享受手机、平板电脑等智能终端带来的基础性功能的同时，也对智能终端提出了更高的要求，如智能终端的全面屏设计。\n\n[0003]全面屏技术，是显示业界对于超高屏占比手机设计的一个比较宽泛的定义。从字面上解释就是手机的正面全部都是屏幕，手机的显示界面被屏幕完全覆盖，手机的四个边框位置都是采用无边框设计，追求接近100％的超高屏占比。但受限于前置摄像头、听筒、距离传感器和光线传感器等其他手机不可或缺的基本功能需要。目前，对于屏下摄像头处兼顾显示的全面屏设计方案中出现了拼接显示的技术，在需要为屏下设备透光的地方使用OLED(OrganicLight-Emitting Diode，有机电激光显示)显示技术。OLED显示技术相对于LCD(Liquid Crystal Display，液晶显示器)显示技术有天然的优势，但是OLED也受限于其像素结构，其像素无法做到高精细，因此会影响透光处的整体透率，最终影响屏下设备的成像质量。\n\n发明内容\n\n[0004]本发明的目的是提供一种显示面板，也解决现有技术中透光显示的像素大小与正常显示的像素大小不一致所导致显示画面出现差异，影响显示效果。\n\n[0005]为实现上述目的，本发明提供一种显示面板，所述显示面板包括液晶显示层以及透光显示层。所述液晶显示层具有一透光孔。所述透光显示层设于所述透光孔内。\n\n[0006]其中，所述透光显示层内分布有若干第一像素，所述液晶显示层内分布有若干第二像素。靠近所述液晶显示层的第一像素的尺寸小于远离所述液晶显示层的第一像素的尺寸。和/或远离所述透光显示层的第二像素的尺寸小于靠近所述透光显示层的第二像素的尺寸。\n\n[0007]进一步地，当靠近所述液晶显示层的第一像素的尺寸小于远离所述液晶显示层的第一像素的尺寸时，所述透光显示层具有第一常规区以及围绕所述第一常规区的第一过渡区。\n\n[0008]所述第一像素包括第一常规像素以及第一过渡像素。所述第一常规像素设于所述第一常规区内。所述第一过渡像素设于所述第一过渡区内，其尺寸小于所述第一常规像素的尺寸。\n\n[0009]进一步地，所述透光显示层还具有至少一个第二过渡区，位于所述第一过渡像素和所述第一常规区之间。所述第一像素还包括第二过渡像素，所述第二过渡像素设于所述第二过渡区内，其尺寸大于所述第一过渡像素的尺寸并小于所述第一常规像素的尺寸。\n\n[0010]进一步地，当远离所述透光显示层的第二像素的尺寸小于靠近所述透光显示层的第二像素的尺寸时，所述液晶显示层中具有第三过渡区以及围绕所述第三过渡区的第二常规区。\n\n[0011]所述第二像素包括第二常规像素以及第三过渡像素。所述第二常规像素设于所述第二常规区内。所述第三过渡像素设于所述第三过渡区内，其尺寸大于所述第二常规像素的尺寸，并等于所述第一像素的尺寸。\n\n[0012]进一步地，所述液晶显示层中还具有至少一个第四过渡区，位于所述第三过渡区与所述第二常规区之间。所述第二像素还包括第四过渡像素，所述第四过渡像素设于所述第四过渡区内，其尺寸大于所述第二常规像素的尺寸，并小于所述第三过渡像素的尺寸。\n\n[0013]进一步地，所述透光显示层具有一主体部以及围绕所述主体部的延伸部，所述延伸部从所述透光孔延伸至所述液晶显示层内。在所述延伸部内，所述第一像素的尺寸等于所述第二像素的尺寸。\n\n[0014]进一步地，所述第一像素包括第一红色像素、第一绿色像素以及第一蓝色像素，并依次排列在所述透光显示层中。所述第二像素包括第二红色像素、第二绿色像素以及第二蓝色像素，并依次排列在所述液晶显示层中。其中，在所述延伸部内，所述第一红色像素对应于所述第二红色像素，所述第一绿色像素对应于所述第二绿色像素，所述第一蓝色像素对应于所述第二蓝色像素。\n\n[0015]进一步地，还包括一支撑层，设于所述透光显示层上。\n\n[0016]进一步地，每一第一像素中具有一发光区以及与所述发光区连接的透光区。所述发光区内具有至少一个Micro-LED芯片。\n\n[0017]进一步地，所述Micro-LED芯片为单色芯片或三色芯片中的一种。\n\n[0018]本发明的优点是：本发明的一种显示面板通过将其透光显示层与液晶显示层拼接处的像素大小逐渐减小或增大，使透光显示层与液晶显示层拼接处的像素大小自然过渡，改善由于像素大小不一致而产生的画面差异，提高全面屏的显示效果。并且还利于液晶显示层与透光显示层的拼接，更加容易实现拼接处的窄边框设计。\n\n附图说明\n\n[0019]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0020]图1为本发明实施例1中显示面板的层状结构示意图；\n\n[0021]图2为本发明实施例1-4中第一像素的平面结构示意图；\n\n[0022]图3为本发明实施例1、4中显示面板的像素分布示意图；\n\n[0023]图4为本发明实施例2中显示面板的层状结构示意图；\n\n[0024]图5为本发明实施例2中显示面板的像素分布示意图；\n\n[0025]图6为本发明实施例3中显示面板的层状结构示意图；\n\n[0026]图7为本发明实施例4中显示面板的层状结构示意图。\n\n[0027]图中部件表示如下：\n\n[0028]显示面板1；\n\n[0029]液晶显示层100；透光孔101；\n\n[0030]第二常规区102；第三过渡区103；\n\n[0031]第四过渡区105；液晶层110；\n\n[0032]色阻层120；第二像素121；\n\n[0033]第二常规像素121A；第三过渡像素121B；\n\n[0034]第四过渡像素121C；第二红色像素121D；\n\n[0035]第二绿色像素121E；第二蓝色像素121F；\n\n[0036]彩膜基板130；阵列基板140；\n\n[0037]偏光片150；框胶160；\n\n[0038]透光显示层200；第一常规区201；\n\n[0039]第一过渡区202；第二过渡区203；\n\n[0040]第一像素210；发光区211；\n\n[0041]透光区212；Micro-LED芯片213；\n\n[0042]第一常规像素210A；第一过渡像素210B；\n\n[0043]第二过渡像素210C；第一红色像素210D；\n\n[0044]第一绿色像素210E；第一蓝色像素210F；\n\n[0045]主体部220；延伸部230；\n\n[0046]支撑层240；背光模组300；\n\n[0047]屏下传感器400。\n\n具体实施方式\n\n[0048]以下参考说明书附图介绍本发明的优选实施例，证明本发明可以实施，所述发明实施例可以向本领域中的技术人员完整介绍本发明，使其技术内容更加清楚和便于理解。本发明可以通过许多不同形式的发明实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例。\n\n[0049]在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。附图所示的每一部件的尺寸和厚度是任意示出的，本发明并没有限定每个组件的尺寸和厚度。为了使图示更清晰，附图中有些地方适当夸大了部件的厚度。\n\n[0050]此外，以下各发明实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定发明实施例。本发明中所提到的方向用语，例如，“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”、“侧面”等，仅是参考附加图式的方向，因此，使用的方向用语是为了更好、更清楚地说明及理解本发明，而不是指示或暗指所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”、“第三”等仅用于描述目的，而不能理解为指示或暗示相对重要性。\n\n[0051]当某些部件被描述为“在”另一部件“上”时，所述部件可以直接置于所述另一部件上；也可以存在一中间部件，所述部件置于所述中间部件上，且所述中间部件置于另一部件上。当一个部件被描述为“安装至”或“连接至”另一部件时，二者可以理解为直接“安装”或“连接”，或者一个部件通过一中间部件间接“安装至”、或“连接至”另一个部件。\n\n[0052]实施例1\n\n[0053]本发明实施例中提供了一种显示面板1，如图1所示，所述显示面板1具有一液晶显示层100、一透光显示层200、一背光模组300以及一屏下传感器400。所述液晶显示层100中具有一透光孔101，所述透光孔101为通孔或盲孔，优选地，在本发明实施例中，所述透光孔101为盲孔。所述屏下传感器400设于所述液晶显示层100的下方，并对应于所述透光孔101。所述背光模组300与所述屏下传感器400设于所述液晶显示层100的同一侧，并围绕所述屏下传感器400。\n\n[0054]所述液晶显示层100中包括一液晶层110、一色阻层120、一彩膜基板130、一阵列基板140以及两层偏光片150。所述液晶层110中填充有液晶。所述色阻层120设于所述液晶层110的一表面上，其分布有若干第二像素121，每一第二像素121的尺寸均一致。所述阵列基板140设于所述液晶层110远离所述色阻层120的一表面上。所述彩膜基板130设于所述色阻层120远离所述液晶层110的一表面上。两层偏光片150分别所述彩膜基板130和所述阵列基板140远离所述液晶层110的一表面上。其中，所述液晶层110、所述色阻层120和两层偏光片150对应所述透光孔101处均一过孔。所述液晶显示层100中还具有一框胶160，所述框胶160设于所述液晶层110的过孔孔壁上，并围绕所述透光孔101，其用于封装所述液晶层110。\n\n[0055]所述液晶层110中的液晶是介于固态和液态间的特殊物质，它是一种有机化合物，常态下呈液态，但是它的分子排列却和固体晶体一样非常规则，因此取名液晶，它的另一个特殊性质在于，在电场作用下，液晶分子会发生排列上的变化，从而影响通过其的光线变化，这种光线的变化通过偏光片150的作用可以表现为明暗的变化。所述阵列基板140设于所述液晶层110的一表面上，其用于提供电场，并对电场进行控制，从而控制液晶分子的排列方向，改变所述液晶层110的透光率，最终达到显示图像的目的。再配合色阻层120和彩膜基板130，将所述液晶层110中的光线进行过滤，精确选择欲通过的小范围波段光波，而反射掉其他不希望通过的波段，使光线呈现出不同的颜色，从而实现彩色图像显示。\n\n[0056]所述透光显示层200设于所述透光孔101中的阵列基板140上，并位于所述液晶层110和所述色阻层120的过孔中。所述透光显示层200中排布有若干第一像素210。所述透光显示层200采用Micro-LED显示技术，如图2所示，每一第一像素210中均具有一发光区211和连接所述发光区211的透光区212。在所述发光区211内设有一Micro-LED芯片213，所述Micro-LED芯片213为单色芯片，其可以发出红光、绿光或蓝光中的一种。当所述透光显示层200需要显示画面时，每一第一像素210发光区211内的Micro-LED芯片213通过其自发光功能实现正常的显示，与液晶显示层100的显示画面衔接，从而实现全面屏显示。当所述透光显示层200需要为屏下传感器400提供透光通道，每一第一像素210发光区211内的Micro-LED芯片213不发光，屏下传感器400通过所述透光区212进行光线采集并成像，从而实现屏下传感。\n\n[0057]如图3所示，所述透光显示层200中还具有一第一常规区201、一第一过渡区202以及一第二过渡区203。所述第一过度区围绕所述第一常规区201，所述第二过渡区203位于所述第一常规区201和所述第一过渡区202之间。所述第一常规区201位于所述透光显示层200的中心位置，所述第一过渡区202位于所述透光显示层200靠近所述液晶显示层100的边缘处。\n\n[0058]所述第一像素210包括第一常规像素210A、第一过渡像素210B以及第二过渡像素210C。所述第一常规像素210A设于所述第一常规区201内，所述第一过渡像素210B设于所述第一过渡区202内，所述第二过渡像素210C设于所述第二过渡区203内。在所述第一过渡区202内排布有1-3圈的第一过渡像素210B，具体的，在本实施例中，所述第一过渡区202内排布有3圈第一过渡像素210B。\n\n[0059]所述第一过渡像素210B的尺寸小于所述第一常规像素210A的尺寸，并等于所述液晶显示层100中第二像素121的尺寸。所述第二过渡像素210C的尺寸位于所述第一常规像素210A和所述第一过渡像素210B的尺寸之间。其中，所述第一常规像素210A透光区212面积大于所述第一过渡像素210B的透光区212面积，所述第二过渡像素210C的透光区212面积也大于所述第一过渡像素210B的透光区212面积。所述第一常规区201、所述第二过渡区203和所述第一过渡区202内第一像素210的尺寸根据分区依次减小，最终达到与所述第二像素121相同的尺寸，从而改善液晶显示层100和透光显示层200由于像素大小不同而产生的显示画面差异，提高显示画面的美感。\n\n[0060]在本发明实施例中，所述透光显示层200具有一个第二过渡区203，但在本发明的其他实施例中，所述透光显示层200还可以具有两个以及两个以上的第二过渡区203，从而实现更加细腻的像素大小的渐变效果，其层状结构与本发明实施例中的透光显示层200相似，因此不在此做过多赘述。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其它实施例，都属于本申请保护的范围。\n\n[0061]所述显示面板1中还具有一支撑层240，所述支撑层240设于所述透光显示层200和所述彩膜基板130之间，其用于为所述彩膜基板130提供支撑力，防止彩膜基板130由于透光显示层200和液晶显示层100的段差而出现裂痕。所述支撑层240中均匀分布了若干支撑柱或填充了透明光学胶，具体的，在本实施例中所述支撑层240采用了支撑柱方案。\n\n[0062]在本发明实施例中，所述显示面板1通过将其透光显示层200中的第一像素210的尺寸根据与液晶显示层100的距离逐渐减小至等于液晶显示层100中第二像素121的尺寸，从而使透光显示层200与液晶显示层100拼接处的像素大小自然过渡，改善由于像素大小不一致而产生的画面差异，提高全面屏的显示效果。并且还利于液晶显示层100与透光显示层200的拼接，更加容易实现窄边框设计。\n\n[0063]实施例2\n\n[0064]本发明实施例中提供了一种显示面板1，如图4所示，所述显示面板1具有一液晶显示层100、一透光显示层200、一背光模组300以及一屏下传感器400。所述液晶显示层100中具有一透光孔101，所述透光孔101为通孔或盲孔，优选地，在本发明实施例中，所述透光孔101为盲孔。所述屏下传感器400设于所述液晶显示层100的下方，并对应于所述透光孔101。所述背光模组300与所述屏下传感器400设于所述液晶显示层100的同一侧，并围绕所述屏下传感器400。\n\n[0065]所述液晶显示层100中包括一液晶层110、一色阻层120、一彩膜基板130、一阵列基板140以及两层偏光片150。所述液晶层110中填充有液晶。所述色阻层120设于所述液晶层110的一表面上。所述阵列基板140设于所述液晶层110远离所述色阻层120的一表面上。所述彩膜基板130设于所述色阻层120远离所述液晶层110的一表面上。两层偏光片150分别所述彩膜基板130和所述阵列基板140远离所述液晶层110的一表面上。其中，所述液晶层110、所述色阻层120和两层偏光片150对应所述透光孔101处均一过孔。所述液晶显示层100中还具有一框胶160，所述框胶160设于所述液晶层110的过孔孔壁上，并围绕所述透光孔101，其用于封装所述液晶层110。\n\n[0066]所述液晶层110中的液晶是介于固态和液态间的特殊物质，它是一种有机化合物，常态下呈液态，但是它的分子排列却和固体晶体一样非常规则，因此取名液晶，它的另一个特殊性质在于，在电场作用下，液晶分子会发生排列上的变化，从而影响通过其的光线变化，这种光线的变化通过偏光片150的作用可以表现为明暗的变化。所述阵列基板140设于所述液晶层110的一表面上，其用于提供电场，并对电场进行控制，从而控制液晶分子的排列方向，改变所述液晶层110的透光率，最终达到显示图像的目的。再配合色阻层120和彩膜基板130，将所述液晶层110中的光线进行过滤，精确选择欲通过的小范围波段光波，而反射掉其他不希望通过的波段，使光线呈现出不同的颜色，从而实现彩色图像显示。\n\n[0067]所述透光显示层200设于所述透光孔101中的阵列基板140上，并位于所述液晶层110和所述色阻层120的过孔中。所述透光显示层200中排布有若干第一像素210。所述透光显示层200采用Micro-LED显示技术，如图2所示，每一第一像素210中均具有一发光区211和连接所述发光区211的透光区212。在所述发光区211内设有一Micro-LED芯片213，所述Micro-LED芯片213为单色芯片，其可以发出红光、绿光或蓝光中的一种。当所述透光显示层200需要显示画面时，每一第一像素210发光区211内的Micro-LED芯片213通过其自发光功能实现正常的显示，与液晶显示层100的显示画面衔接，从而实现全面屏显示。当所述透光显示层200需要为屏下传感器400提供透光通道，每一第一像素210发光区211内的Micro-LED芯片213不发光，屏下传感器400通过所述透光区212进行光线采集并成像，从而实现屏下传感。\n\n[0068]如图5所示，所述液晶显示层100中中还具有一第二常规区102、一第三过渡区103以及一第四过渡区105。所述第三过度区围绕所述透光孔101，所述第二常规区102围绕所述第三过渡区103，所述第四过渡设于所述第二常规区102和所述第三过渡区103之间。\n\n[0069]所述色阻层120中排布有若干第二像素121，所述第二像素121中包括第二常规像素121A、第三过渡像素121B以及第四过渡像素121C。所述第二常规像素121A设于所述第二常规区102内，所述第三过渡像素121B设于所述第三过渡区103内，所述第四过渡像素121C设于所述第四过渡区105内。\n\n[0070]所述第二常规像素121A的尺寸小于所述第三过渡像素121B的尺寸，所述第三过渡像素121B的尺寸等于所述液晶显示层100中第一像素210的尺寸。所述第四过渡像素121C的尺寸位于所述第二常规像素121A和所述第三过渡像素121B的尺寸之间。所述第二常规区102、所述第三过渡区103和所述第四过渡区105内的第二像素121的尺寸根据分区依次增大，最终达到与所述第一像素210相同的尺寸，从而改善液晶显示层100和透光显示层200由于像素大小不同而产生的显示画面差异，提高显示画面的美感。\n\n[0071]在本发明实施例中，所述透光显示层200具有一个第四过渡区105，但在本发明的其他实施例中，所述透光显示层200还可以具有两个以及两个以上的第四过渡区105，从而实现更加细腻的像素大小的渐变效果，其层状结构与本发明实施例中的液晶显示层100相似，因此不在此做过多赘述。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其它实施例，都属于本申请保护的范围。\n\n[0072]所述显示面板1中还具有一支撑层240，所述支撑层240设于所述透光显示层200和所述彩膜基板130之间，其用于为所述彩膜基板130提供支撑力，防止彩膜基板130由于透光显示层200和液晶显示层100的段差而出现裂痕。所述支撑层240中均匀分布了若干支撑柱或填充了透明光学胶，具体的，在本实施例中所述支撑层240采用了支撑柱方案。\n\n[0073]在本发明实施例中，所述显示面板1通过将其液晶显示层100中第二像素121的尺寸根据与透光显示层200的距离逐渐增大至等于液晶显示层100中第二像素121的尺寸，从而使液晶显示层100与透光显示层200拼接处的像素大小自然过渡，改善由于像素大小不一致而产生的画面差异，提高全面屏的显示效果。并且还利于液晶显示层100与透光显示层200的拼接，更加容易实现窄边框设计。\n\n[0074]实施例3\n\n[0075]本发明实施例中提供了一种显示面板1，如图6所示，所述显示面板1具有一液晶显示层100、一透光显示层200、一背光模组300以及一屏下传感器400。所述液晶显示层100中具有一透光孔101，所述透光孔101为通孔或盲孔，优选地，在本发明实施例中，所述透光孔101为盲孔。所述屏下传感器400设于所述液晶显示层100的下方，并对应于所述透光孔101。所述背光模组300与所述屏下传感器400设于所述液晶显示层100的同一侧，并围绕所述屏下传感器400。\n\n[0076]所述液晶显示层100中包括一液晶层110、一色阻层120、一彩膜基板130、一阵列基板140以及两层偏光片150。所述液晶层110中填充有液晶。所述色阻层120设于所述液晶层110的一表面上，其分布有若干第二像素121，每一第二像素121的尺寸均一致。所述第二像素121包括若干第二红色像素121D、若干第二绿色像素121E以及若干第二蓝色像素121F，所述第二红色像素121D、所述第二绿色像素121E以及所述第二蓝色像素121F依次排列在所述色阻层120中。所述阵列基板140设于所述液晶层110远离所述色阻层120的一表面上。所述彩膜基板130设于所述色阻层120远离所述液晶层110的一表面上。两层偏光片150分别所述彩膜基板130和所述阵列基板140远离所述液晶层110的一表面上。其中，所述液晶层110、所述色阻层120和两层偏光片150对应所述透光孔101处均一过孔。所述液晶显示层100中还具有一框胶160，所述框胶160设于所述液晶层110的过孔孔壁上，并围绕所述透光孔101，其用于封装所述液晶层110。\n\n[0077]所述液晶层110中的液晶是介于固态和液态间的特殊物质，它是一种有机化合物，常态下呈液态，但是它的分子排列却和固体晶体一样非常规则，因此取名液晶，它的另一个特殊性质在于，在电场作用下，液晶分子会发生排列上的变化，从而影响通过其的光线变化，这种光线的变化通过偏光片150的作用可以表现为明暗的变化。所述阵列基板140设于所述液晶层110的一表面上，其用于提供电场，并对电场进行控制，从而控制液晶分子的排列方向，改变所述液晶层110的透光率，最终达到显示图像的目的。再配合色阻层120和彩膜基板130，将所述液晶层110中的光线进行过滤，精确选择欲通过的小范围波段光波，而反射掉其他不希望通过的波段，使光线呈现出不同的颜色，从而实现彩色图像显示。\n\n[0078]所述透光显示层200设于所述透光孔101中的阵列基板140上，并位于所述液晶层110和所述色阻层120的过孔中。所述透光显示层200中排布有若干第一像素210。所述透光显示层200采用Micro-LED显示技术，如图2所示，每一第一像素210中均具有一发光区211和连接所述发光区211的透光区212。在所述发光区211内设有一Micro-LED芯片213，所述Micro-LED芯片213为三色芯片，其通过时序控制，单个芯片就能分时分别发出红色、绿色和蓝色三种颜色的光，从而实现彩色显示。当所述透光显示层200需要显示画面时，每一第一像素210发光区211内的Micro-LED芯片213通过其自发光功能实现正常的显示，与液晶显示层100的显示画面衔接，从而实现全面屏显示。当所述透光显示层200需要为屏下传感器400提供透光通道，每一第一像素210发光区211内的Micro-LED芯片213不发光，屏下传感器400通过所述透光区212进行光线采集并成像，从而实现屏下传感。\n\n[0079]所述透光显示层200中还具有一第一常规区201、一第一过渡区202以及一第二过渡区203。所述第一过度区围绕所述第一常规区201，所述第二过渡区203位于所述第一常规区201和所述第一过渡区202之间。所述第一常规区201位于所述透光显示层200的中心位置，所述第一过渡区202位于所述透光显示层200靠近所述液晶显示层100的边缘处。\n\n[0080]所述第一像素210包括第一常规像素210A、第一过渡像素210B以及第二过渡像素210C。所述第一常规像素210A设于所述第一常规区201内，所述第一过渡像素210B设于所述第一过渡区202内，所述第二过渡像素210C设于所述第二过渡区203内。在所述第一过渡区202内排布有1-3圈的第一过渡像素210B，具体地，在本实施例中，所述第一过渡区202内排布有1圈第一过渡像素210B。并且在所述第二过渡区203内也排布了1圈第二过渡像素210C。其中，所述第一过渡区202和所述第二过渡区203均为环形，并且所述第一过渡区202的环宽等于所述第一过渡像素210B的宽度，所述第二过渡区203的环宽等于第二过渡像素210C的宽度。\n\n[0081]所述第一过渡像素210B的尺寸小于所述第一常规像素210A的尺寸，并且所述第一过渡像素210B的宽度等于所述液晶显示层100中所述第二红色像素121D、所述第二绿色像素121E和所述第二蓝色像素121F的宽度之和。所述第二过渡像素210C的尺寸位于所述第一常规像素210A和所述第一过渡像素210B的尺寸之间。其中，所述第一常规像素210A透光区212面积大于所述第一过渡像素210B的透光区212面积，所述第二过渡像素210C的透光区212面积也大于所述第一过渡像素210B的透光区212面积。所述第一常规区201、所述第二过渡区203和所述第一过渡区202内第一像素210的尺寸根据分区依次减小，最终达到其拼接处的像素尺寸与液晶显示层100中的三色像素的大小总和相近的效果，从而改善液晶显示层100和透光显示层200由于像素大小不同而产生的显示画面差异，提高显示画面的美感。\n\n[0082]在本发明实施例中，所述透光显示层200具有一个第二过渡区203，但在本发明的其他实施例中，所述透光显示层200还可以具有两个以及两个以上的第二过渡区203，从而实现更加细腻的像素大小的渐变效果，其层状结构与本发明实施例中的透光显示层200相似，因此不在此做过多赘述。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其它实施例，都属于本申请保护的范围。\n\n[0083]所述显示面板1中还具有一支撑层240，所述支撑层240设于所述透光显示层200和所述彩膜基板130之间，其用于为所述彩膜基板130提供支撑力，防止彩膜基板130由于透光显示层200和液晶显示层100的段差而出现裂痕。所述支撑层240中均匀分布了若干支撑柱或填充了透明光学胶，具体的，在本实施例中所述支撑层240采用了透明光学胶方案。\n\n[0084]在本发明实施例中，所述显示面板1通过将其透光显示层200中的第一像素210的尺寸根据与液晶显示层100的距离逐渐减小至与液晶显示层100中三色第二像素121的大小总和相接近，从而使透光显示层200与液晶显示层100拼接处的像素大小自然过渡，改善由于像素大小不一致而产生的画面差异，提高全面屏的显示效果。并且还利于液晶显示层100与透光显示层200的拼接，更加容易实现窄边框设计。相较于实施例1和实施例2，其透光显示层200采用三色芯片，从而使其发光区211总面积更小，透光区212的总面积更大，拥有更好的透光效果。\n\n[0085]实施例4\n\n[0086]本发明实施例中提供了一种显示面板1，如图7所示，所述显示面板1具有一液晶显示层100、一透光显示层200、一背光模组300以及一屏下传感器400。所述液晶显示层100中具有一透光孔101，所述透光孔101为通孔或盲孔，优选地，在本发明实施例中，所述透光孔101为盲孔。所述屏下传感器400设于所述液晶显示层100的下方，并对应于所述透光孔101。所述背光模组300与所述屏下传感器400设于所述液晶显示层100的同一侧，并围绕所述屏下传感器400。\n\n[0087]所述液晶显示层100中包括一液晶层110、一色阻层120、一彩膜基板130、一阵列基板140以及两层偏光片150。所述液晶层110中填充有液晶。所述色阻层120设于所述液晶层110的一表面上，其分布有若干第二像素121，每一第二像素121的尺寸均一致。所述第二像素121包括若干第二红色像素121D、若干第二绿色像素121E以及若干第二蓝色像素121F，所述第二红色像素121D、所述第二绿色像素121E以及所述第二蓝色像素121F依次排列在所述色阻层120中。所述阵列基板140设于所述液晶层110远离所述色阻层120的一表面上。所述彩膜基板130设于所述色阻层120远离所述液晶层110的一表面上。两层偏光片150分别所述彩膜基板130和所述阵列基板140远离所述液晶层110的一表面上。其中，所述液晶层110、所述色阻层120和两层偏光片150对应所述透光孔101处均一过孔。\n\n[0088]所述液晶层110中的液晶是介于固态和液态间的特殊物质，它是一种有机化合物，常态下呈液态，但是它的分子排列却和固体晶体一样非常规则，因此取名液晶，它的另一个特殊性质在于，在电场作用下，液晶分子会发生排列上的变化，从而影响通过其的光线变化，这种光线的变化通过偏光片150的作用可以表现为明暗的变化。所述阵列基板140设于所述液晶层110的一表面上，其用于提供电场，并对电场进行控制，从而控制液晶分子的排列方向，改变所述液晶层110的透光率，最终达到显示图像的目的。再配合色阻层120和彩膜基板130，将所述液晶层110中的光线进行过滤，精确选择欲通过的小范围波段光波，而反射掉其他不希望通过的波段，使光线呈现出不同的颜色，从而实现彩色图像显示。\n\n[0089]所述透光显示层200设于所述透光孔101中的阵列基板140上，并位于所述液晶层110和所述色阻层120的过孔中。所述透光显示层200中排布有若干第一像素210。所述透光显示层200采用Micro-LED显示技术，如图2所示，每一第一像素210中均具有一发光区211和连接所述发光区211的透光区212。在所述发光区211内设有一Micro-LED芯片213，所述Micro-LED芯片213为单色芯片，其可以发出红光、绿光或蓝光中的一种。当所述透光显示层200需要显示画面时，每一第一像素210发光区211内的Micro-LED芯片213通过其自发光功能实现正常的显示，与液晶显示层100的显示画面衔接，从而实现全面屏显示。当所述透光显示层200需要为屏下传感器400提供透光通道，每一第一像素210发光区211内的Micro-LED芯片213不发光，屏下传感器400通过所述透光区212进行光线采集并成像，从而实现屏下传感。\n\n[0090]所述透光显示层200具有一主体部220以及一延伸部230。所述主体部220对应于所述透光孔101，如图3所示，所述主体部220中具有一第一常规区201、一第一过渡区202以及一第二过渡区203。所述第一过度区围绕所述第一常规区201，所述第二过渡区203位于所述第一常规区201和所述第一过渡区202之间。所述第一常规区201位于所述主体部220的中心位置，所述第一过渡区202位于所述主体部220靠近所述液晶显示层100的边缘处。所述延伸部230围绕所述主体部220，并从所述透光孔101衍生至所述液晶显示层100内，位于所述色阻层120和所述阵列基板140之间，所述液晶层110围绕所述延伸部230的侧面。\n\n[0091]所述第一像素210根据尺寸大小可分为第一常规像素210A、第一过渡像素210B以及第二过渡像素210C。所述第一常规像素210A设于所述第一常规区201和所述延伸部230内，所述第一过渡像素210B设于所述第一过渡区202内，所述第二过渡像素210C设于所述第二过渡区203内。在所述第一过渡区202和所述延伸部230内排布有1-3圈的第一过渡像素210B，具体的，在本实施例中，所述第一过渡区202和所述延伸部230内排布有3圈第一过渡像素210B。在所述第一过渡区202或所述延伸部230内，每一圈的第一过渡像素210B的发光颜色均不同。其中，所述第一像素210根据发光颜色可分为第一红色像素210D、第一绿色像素210E以及第一蓝色像素210F，所述第一红色像素210D、所述第一绿色像素210E以及所述第一蓝色像素210F依次排布在所述透光显示层200中。并且，如图7所示，在所述延伸部230内，所述第一红色像素210D对应于所述第二红色像素121D，所述第一绿色像素210E对应于所述第二绿色像素121E，所述第一蓝色像素210F对应于所述第二蓝色像素121F。所述延伸部230中的第一像素210的颜色与所述色阻层120中的第二像素121的颜色一一对应，当面板组装发生偏移时，所述色阻层120还可以起到滤光的作用，吸收由于组装偏移而发生的相邻颜色的散射问题，从而改善画面显示。\n\n[0092]所述第一过渡像素210B的尺寸小于所述第一常规像素210A的尺寸，并等于所述液晶显示层100中第二像素121的尺寸。所述第二过渡像素210C的尺寸位于所述第一常规像素210A和所述第一过渡像素210B的尺寸之间。其中，所述第一常规像素210A透光区212面积大于所述第一过渡像素210B的透光区212面积，所述第二过渡像素210C的透光区212面积也大于所述第一过渡像素210B的透光区212面积。所述第一常规区201、所述第二过渡区203和所述第一过渡区202内第一像素210的尺寸根据分区依次减小，最终达到与所述第二像素121相同的尺寸，从而改善液晶显示层100和透光显示层200由于像素大小不同而产生的显示画面差异，提高显示画面的美感。\n\n[0093]在本发明实施例中，所述透光显示层200具有一个第二过渡区203，但在本发明的其他实施例中，所述透光显示层200还可以具有两个以及两个以上的第二过渡区203，从而实现更加细腻的像素大小的渐变效果，其层状结构与本发明实施例中的透光显示层200相似，因此不在此做过多赘述。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其它实施例，都属于本申请保护的范围。\n\n[0094]所述显示面板1中还具有一支撑层240，所述支撑层240设于所述透光显示层200和所述彩膜基板130之间，并也延伸至所述透光显示层200的延伸部230与所述液晶显示层100的色阻层120之间，所述液晶层110同时围绕所述支撑层240和所述透光显示层200延伸部230的侧面。所述支撑层240用于为所述彩膜基板130提供支撑力，防止彩膜基板130由于透光显示层200和液晶显示层100的段差而出现裂痕。所述支撑层240中均匀分布了若干支撑柱或填充了透明光学胶，具体的，在本实施例中所述支撑层240采用了透明光学胶方案。\n\n[0095]在本发明实施例中，所述显示面板1通过将其透光显示层200中的第一像素210的尺寸根据与液晶显示层100的距离逐渐减小至等于液晶显示层100中第二像素121的尺寸，从而使透光显示层200与液晶显示层100拼接处的像素大小自然过渡，改善由于像素大小不一致而产生的画面差异，提高全面屏的显示效果。并且还利于液晶显示层100与透光显示层200的拼接，更加容易实现窄边框设计。相较于实施例1、实施例2以及实施例3，本发明实施例中的透光显示层200延伸至里液晶显示层100中，降低了组装难度，改善了因为组装偏差而导致的显示不均匀，并且拼接位置的边框可以做到更窄。\n\n[0096]虽然在本文中参照了特定的实施方式来描述本发明，但是应该理解的是，这些实施例仅仅是本发明的原理和应用的示例。因此应该理解的是，可以对示例性的实施例进行许多修改，并且可以设计出其他的布置，只要不偏离所附权利要求所限定的本发明的精神和范围。应该理解的是，可以通过不同于原始权利要求所描述的方式来结合不同的从属权利要求和本文中所述的特征。还可以理解的是，结合单独实施例所描述的特征可以使用在其他所述实施例中。');
INSERT INTO `os_patent_instruction_text` VALUES (10818, 23872, '技术领域\n\n[0001]本申请涉及显示面板技术领域，尤其涉及一种微型发光二极管显示面板及其制作方法、显示装置。\n\n背景技术\n\n[0002]微型发光二极管(Micro-LED)显示面板具有寿命长、亮度高、发光效率好、功耗低的优点。随着显示技术的飞速发展，触控技术已经成为显示产品必不可少的部分。然而，目前的微型发光二极管显示面板的触控部件和显示部件是相互独立且层叠设置的，导致微型发光二极管显示面板的触控显示装置厚度较大，进而也缩小了微型发光二极管显示面板的应用范围。\n\n发明内容\n\n[0003]本申请实施例提供了一种具有内嵌触控结构的微型发光二极管显示面板，可以降低微型发光二极管显示面板的厚度，进而增大微型发光二极管显示器的应用范围。\n\n[0004]本申请提供了一种微型发光二极管显示面板，包括：\n\n[0005]多个微型发光二极管；\n\n[0006]阵列基板，包括第一金属层，第一金属层包括多个第一连接电极和多个第二连接电极，每一第一连接电极和对应的第二连接电极电性连接于对应的微型发光二极管；\n\n[0007]其中，多个第一连接电极和多个第二连接电极中的至少一个为复用电极，在显示阶段，每一复用电极驱动对应的微型发光二极管发光；\n\n[0008]其中，在触控阶段，每一复用电极复用为触控电极。\n\n[0009]在本申请的显示面板中，在触控阶段，多个第二连接电极的至少一部分复用为触控电极，多个第一连接电极不复用为触控电极。\n\n[0010]在本申请的显示面板中，在触控阶段，多个第一连接电极和多个第二连接电极均复用为触控电极。\n\n[0011]在本申请的显示面板中，触控电极包括感应触控电极和接收触控电极，在触控阶段，多个第一连接电极的至少一部分复用为感应触控电极，多个第二连接电极的至少一部分复用为接收触控电极。\n\n[0012]在本申请的显示面板中，触控电极包括感应触控电极或接收触控电极，在触控阶段，多个第一连接电极和多个第二连接电极中的至少一部分复用为感应触控电极和接收触控电极。\n\n[0013]在本申请的显示面板中，第一金属层还包括第三触控电极。\n\n[0014]在本申请的显示面板中，每一触控电极包括相互连接的多个复用电极。\n\n[0015]在本申请的显示面板中，阵列基板包括基底和第二金属层，第二金属层位于基底与第一金属层之间，第一金属层与第二金属层之间设置有第一绝缘层，第二金属层还包括多个触控连接电极，每一触控连接电极连接于对应的两复用电极之间。\n\n[0016]本申请提供了一种一种微型发光二极管显示面板的制造方法，包括：\n\n[0017]在基底的一侧形成第三金属层，第三金属层包括薄膜晶体管的源极和漏极；\n\n[0018]在第三金属层上形成第二绝缘层，第二绝缘包括第一过孔；\n\n[0019]在第二绝缘层上形成第二金属层，第二金属层包括多个触控连接电极和多条触控走线；\n\n[0020]在第二金属层上形成第一绝缘层；第一绝缘层包括第二过孔和第三过孔，第二过孔在基底上的正投影与第一过孔在基底上的正投影至少部分重合；\n\n[0021]在第一绝缘层上形成第一金属层，第一金属层包括多个第一连接电极和多个第二连接电极，第一连接电极通过第一过孔和第二过孔连接于薄膜晶体管的源极或漏极，多个第一连接电极和多个第二连接电极中的至少一个为复用电极，每一复用电极在显示阶段驱动对应的微型发光二极管发光，每一复用电极在触控阶段复用为触控电极，每一触控电极包括相互连接的多个复用电极，每一触控连接电极连接于对应的两复用电极之间，触控走线连接于对应的触控电极的触控连接电极；\n\n[0022]安装微型发光二极管，使得每一第一连接电极和对应的第二连接电极电性连接于对应的微型发光二极管。\n\n[0023]本申请还提供了一种显示装置，显示装置包括上述任意一种显示面板。\n\n[0024]本申请的有益效果为：通过将触控功能集成在微型发光二极管显示面板的内部，提出一种具有内嵌触控结构的微型发光二极管显示面板，不需要另外层叠设置触控部件，可以降低微型发光二极管显示面板的厚度和成本，进而增大微型发光二极管显示面板的应用范围。\n\n附图说明\n\n[0025]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0026]图1为本申请一实施例提供的微型发光二极管显示面板的断面结构示意图；\n\n[0027]图2为本申请一实施例提供的微型发光二极管显示面板的断面结构示意图；\n\n[0028]图3为本申请一实施例提供的微型发光二极管显示面板的断面结构示意图；\n\n[0029]图4为本申请一实施例提供的微型发光二极管显示面板的触控电极的俯视结构示意图；\n\n[0030]图5为本申请一实施例提供的微型发光二极管显示面板的触控电极的俯视结构示意图；\n\n[0031]图6为本申请一实施例提供的微型发光二极管显示面板的触控电极和触控走线的俯视结构示意图；\n\n[0032]图7为本申请一实施例提供的一种显示装置的示意图。\n\n具体实施方式\n\n[0033]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0034]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0035]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0036]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0037]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0038]请参阅图1～图6，本申请的实施例提供了一种微型发光二极管显示面板1000，包括：多个微型发光二极管111；阵列基板10，包括第一金属层21，第一金属层21包括多个第一连接电极211和多个第二连接电极212，每一第一连接电极211和对应的第二连接电极212电性连接于对应的微型发光二极管111；其中，多个第一连接电极211和多个第二连接电极212中的至少一个为复用电极，在显示阶段，每一复用电极驱动对应的微型发光二极管111发光；其中，在触控阶段，每一复用电极复用为触控电极。\n\n[0039]本申请的有益效果为：通过将触控功能集成在微型发光二极管显示面板的内部，不需要另外层叠设置触控部件，可以降低微型发光二极管显示面板的厚度和成本，进而增大微型发光二极管显示面板的应用范围。\n\n[0040]具体的，例如阵列基板10包括薄膜晶体管100，薄膜晶体管100包括有源层13、栅绝缘层14、栅极15、层间绝缘层16、源极171(或源极172)、漏极172(或漏极171)，第一连接电极211电性连接于薄膜晶体管100的源极171(或源极172)或漏极172(或漏极171)。微型发光二极管111包括第一安装电极1111、第二安装电极1112和微型发光二极管本体1113，第一安装电极1111可以为微型发光二极管111的阳极或者阴极，第二安装电极1112可以为微型发光二极管111的阴极或者阳极，第一连接电极211和第二连接电极212其中之一连接于薄膜晶体管100的源极171(或源极172)或漏极172(或漏极171)，如图1～图3所示，第一安装电极1111电性连接于第一连接电极211，第二安装电极1112电性连接于第二连接电极212。需要说明的是，虽然本申请举例说明了阵列基板10或者薄膜晶体管100的结构，但不限于此。\n\n[0041]具体的，第一连接电极211和多个第二连接电极212中的至少一个为复用电极，即采用分时复用的方式，在显示阶段，每一复用电极驱动对应的微型发光二极管111发光，在在触控阶段，每一复用电极复用为触控电极起到触控功能。例如具体包括：驱动模块将每一帧分为显示阶段以及触控阶段；在显示阶段时，驱动模块向复用电极提供显示信号；在触控阶段时，驱动模块向复用电极提供触控信号。其中，每一微型发光二极管111包括第一安装电极1111、第二安装电极1112，阵列基板10包括与每一微型发光二极管111对应连接的第一连接电极211和第二连接电极212，作为复用电极的第一连接电极211或/和第二连接电极212在显示阶段可以驱动与其相连接的微型发光二极管111。\n\n[0042]具体的，微型发光二极管111包括Micro-LED，但不限于此。\n\n[0043]在一些实施例中，请参阅图1、图3，在触控阶段，多个第二连接电极212的至少一部分复用为触控电极，多个第一连接电极211不复用为触控电极。\n\n[0044]在一些实施例中，请参阅图1、图3，在触控阶段，多个第一连接电极211和多个第二连接电极212中的一种复用为触控电极，多个第一连接电极211和多个第二连接电极212中的另一种不复用。\n\n[0045]具体的，例如多个第二电极包括复用为触控电极的一部分或者不复用的一部分，例如多个第二电极全部为复用电极。通过将第一连接电极211和多个第二连接电极212中的一种复用为触控电极，简化了制作工艺，不用另外再制作触控电极。\n\n[0046]在一些实施例中，请参阅图1、图3，在触控阶段，多个第一连接电极211和多个第二连接电极212均复用为触控电极。\n\n[0047]具体的，多个第一连接电极211和多个第二连接电极212都为复用电极，采用分时复用的方式，在显示阶段，每一复用电极驱动对应的微型发光二极管111发光，在在触控阶段，每一复用电极复用为触控电极起到触控功能。通过将多个第一连接电极211和多个第二连接电极212均复用为触控电极，简化了制作工艺，不用另外再制作触控电极。\n\n[0048]在一些实施例中，触控电极包括感应触控电极和接收触控电极，在触控阶段，多个第一连接电极211的至少一部分复用为感应触控电极，多个第二连接电极212的至少一部分复用为接收触控电极。\n\n[0049]具体的，例如内嵌的触控功能的结构为互容式触控，触控电极包括感应触控电极和接收触控电极，例如第一连接电极211复用为感应触控电极和第二连接电极212复用为接收触控电极，例如第二连接电极212复用为感应触控电极和第一连接电极211复用接收触控电极。需要说明的是：多个第一连接电极211可以全部或部分复用，多个第二连接电极212可以全部或部分复用。本实施例中举例提出了内嵌互容式触控的设置方法。\n\n[0050]在一些实施例中，触控电极包括感应触控电极或接收触控电极，在触控阶段，多个第一连接电极211和多个第二连接电极212中的至少一部分复用为感应触控电极和接收触控电极。\n\n[0051]具体的，例如内嵌的触控功能的结构为互容式触控，触控电极包括感应触控电极和接收触控电极，例如第一连接电极211复用为感应触控电极和接收触控电极，例如第二连接电极212复用为感应触控电极和接收触控电极。需要说明的是：多个第一连接电极211可以全部或部分复用，多个第二连接电极212可以全部或部分复用。本实施例中举例提出了内嵌互容式触控的设置方法。\n\n[0052]在一些实施例中，请参阅图2，第一金属层21还包括第三触控电极213。\n\n[0053]具体的，第三触控电极213可以设置在第一连接电极211或/和第二连接电极212之间，第三触控电极213可以与复用的第一连接电极211或/和第二连接电极212一起构成触控电极。第三触控电极213的设置可以辅助复用电极起到触控功能，提升触控性能。\n\n[0054]在一些实施例中，可以只设置第三触控电极213，此时，第一连接电极211和第二连接电极212可以不复用为触控电极，通过第三触控电极213的设置就可以实现触控功能。例如在互容式触控结构中第三触控电极213设置为感应触控电极和接收触控电极，例如在自容式触控结构中第三触控电极213设置为触控电极。当只设置第三触控电极213为触控电极时，也可以实现很好的触控功能，为另外一种内嵌触控设置方法。\n\n[0055]在一些实施例中，上述实施例中的每一触控电极可以设置一个第一连接电极211或/和第二连接电极212；\n\n[0056]在一些实施例中，上述实施例中的每一触控电极可以设置一个第一连接电极211或/和第二连接电极212、以及一个第三触控电极；\n\n[0057]在一些实施例中，上述实施例中的每一触控电极可以设置一个第三触控电极213。\n\n[0058]在一些实施例中，每一触控电极包括一个复用电极。\n\n[0059]具体的，例如每一触控电极包括作为复用电极的一个第一连接电极211或/和一个第二连接电极212。\n\n[0060]在一些实施例中，每一触控电极包括一个复用电极和第三触控电极213。\n\n[0061]具体的，例如每一触控电极包括作为复用电极的一个第一连接电极211或/和一个第二连接电极212、以及一个第三触控电极213.\n\n[0062]在一些实施例中，每一触控电极包括一个第三触控电极213。\n\n[0063]在一些实施例中，请参阅图4，每一触控电极包括相互连接的多个复用电极。\n\n[0064]具体的，例如当复用电极为第一连接电极211和第二连接电极212中的一种时，每一触控电极包括多个第一连接电极211，或者每一触控电极包括多个第二连接电极212。\n\n[0065]具体的，例如当复用电极为第一连接电极211和第二连接电极212中的两种时，每一触控电极包括多个第一连接电极211或/和多个第二连接电极212。\n\n[0066]具体的，例如当复用电极为第一连接电极211和第二连接电极212中的两种时，每一触控电极包括一个第一连接电极211和多个第二连接电极212，或每一触控电极包括多个第一连接电极211和一个第二连接电极212\n\n[0067]在一些实施例中，请参阅图5，每一触控电极包括相互连接的一个或多个复用电极、以及一个或多个第三触控电极213。\n\n[0068]在一些实施例中，每一触控电极包括相互连接的多个第三触控电极213。\n\n[0069]需要说明的是，上述实施例中举例说明每一触控电极中第一连接电极211、第二连接电极212、以及第三触控电极213的数量，本申请不限定每一触控电极所包括的复用电极和第三触控电极的数量。触控电极的设置方式有多种，可以依据显示面板的设计需要进行选择，扩大内嵌触控设置的结构范围和应用范围。\n\n[0070]在一些实施例中，请参阅图1～图5，阵列基板10包括基底11和第二金属层19，第二金属层位于基底11与第一金属层21之间，第一金属层21与第二金属层19之间设置有第一绝缘层20，第二金属层19还包括多个触控连接电极191，每一触控连接电极191连接于对应的两复用电极之间。\n\n[0071]具体的，例如每一触控电极包括多个第一连接电极211或/和多个第二连接电极212，同一触控电极内的第一连接电极211或/和第二连接电极212之间通过触控连接电极191连接成一个整体。\n\n[0072]在一些实施例中，请参阅图1～图5，阵列基板10包括基底11和第二金属层19，第二金属层位于基底11与第一金属层21之间，第一金属层21与第二金属层19之间设置有第一绝缘层20，第二金属层19还包括多个触控连接电极191，每一触控连接电极191连接于对应的两复用电极、或对应的复用电极与第三触控电极213、或对应的两第三触控电极213。\n\n[0073]具体的，例如每一触控电极包括多个第一连接电极211或/和多个第二连接电极212、以及多个第三触控电极213，第一连接电极211或/和第二连接电极212、以及第三触控电极213之间通过触控连接电极191连接成一个整体。\n\n[0074]具体的，例如每一触控电极包括多个第三触控电极213，第三触控电极213之间通过触控连接电极191连接成一个整体。\n\n[0075]通过触控连接电极191将多个复用电极或/和第三触控电极213连接作为一个触控电极，可以选择设置触控电极的面积和范围，增加了内嵌触控设置的结构范围和应用范围，并提高触控性能。\n\n[0076]在一些实施例中，请参阅图1、图2、图6，第二金属层19包括多条触控走线192和多个触控连接电极191，每一触控走线192连接于对应的触控电极或触控连接电极191。\n\n[0077]具体的，例如在内嵌的触控功能的结构为自容式触控，触控电极为触控感应电极，触控走线192为触控驱动走线，触控走线192连接于对应的触控电极。\n\n[0078]在一些实施例中，请参阅图3、图6，阵列基板10包括第三金属层17，第三金属层17位于基底11与第二金属层19之间，第二金属层19与第三金属层17之间设置有第二绝缘层18，其中，第三金属层17包括多条触控走线173和薄膜晶体管100的源极171(或源极172)、漏极172(或漏极171)，每一触控走线173连接于对应的触控电极。\n\n[0079]具体的，例如在内嵌的触控功能的结构为自容式触控，触控电极为触控感应电极，触控走线173为触控驱动走线，触控走线173连接于对应的触控电极。\n\n[0080]通过触控走线设置与源极171(或源极172)、漏极172(或漏极171)同层或不同层设置，增加了内嵌触控设置的结构范围和应用范围。\n\n[0081]本申请提供了一种微型发光二极管显示面板1000的制造方法，请参阅图1、图6，制造方法包括：\n\n[0082]S1：在基底11的一侧形成第三金属层17，第三金属层17包括薄膜晶体管100的源极171(或源极172)和漏极172(或漏极171)；\n\n[0083]S2：在第三金属层17上形成第二绝缘层18，第二绝缘包括第一过孔181；\n\n[0084]S3：在第二绝缘层18上形成第二金属层19，第二金属层19包括多个触控连接电极191和多条触控走线192；\n\n[0085]S4：在第二金属层19上形成第一绝缘层20；第一绝缘层20包括第二过孔201和第三过孔202，第二过孔201在基底11上的正投影与第一过孔181在基底11上的正投影至少部分重合；\n\n[0086]S5：在第一绝缘层上形成第一金属层21，第一金属层21包括多个第一连接电极211和多个第二连接电极212，第一连接电极211通过第一过孔181和第二过孔201连接于薄膜晶体管100的源极171(或源极172)或漏极172(或漏极171)，多个第一连接电极211和多个第二连接电极212中的至少一个为复用电极，每一复用电极在显示阶段驱动对应的微型发光二极管111发光，每一复用电极在触控阶段复用为触控电极，每一触控电极包括相互连接的多个复用电极，每一触控连接电极191连接于对应的两复用电极之间，触控走线192连接于对应的触控电极的触控连接电极191；\n\n[0087]S6:安装微型发光二极管111，使得每一第一连接电极211和对应的第二连接电极212电性连接于对应的微型发光二极管111。\n\n[0088]在一些实施例的制造方法中，还包括在基底11的一侧形成缓冲层12，在缓冲层12上形成薄膜晶体管100，薄膜晶体管包括有源层13、栅绝缘层14、栅极15、层间绝缘层16、源极171(或源极172)、漏极172(或漏极171),其中，薄膜晶体管100的结构不做限定，例如薄膜晶体管100可以为顶栅型或底栅型。\n\n[0089]在一些实施例的制造方法中，触控走线可设置于第三金属层17上，请参阅图3，第三金属层17包括触控触控走线173。\n\n[0090]需要说明的是，在上述制造方法中，安装微型发光二极管111于阵列基板10上，每一微型发光二极管111与对应的第一连接电极211和对应的第二连接电极212的电性连接方式包括但不限于焊接，连接材料可以为锡膏。\n\n[0091]通过上述制造方法，可以制造出高性能的具有内嵌触控功能的微型发光二极管显示面板1000。\n\n[0092]本申请还提供了一种显示装置3000，请参阅图7，显示装置3000包括上述任意一种微型发光二极管显示面板1000，显示装置还可以包括但不限于外壳、保护部件等其他部件2000。\n\n[0093]本申请通过将触控功能集成在微型发光二极管显示面板的内部，提出一种具有内嵌触控结构的微型发光二极管显示面板，不需要另外层叠设置触控部件，可以降低微型发光二极管显示面板的厚度和成本，进而增大微型发光二极管显示面板的应用范围。\n\n[0094]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0095]以上对本申请实施例进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示面板技术领域，尤其涉及一种微型发光二极管显示面板及其制作方法、显示装置。\n\n背景技术\n\n[0002]微型发光二极管(Micro-LED)显示面板具有寿命长、亮度高、发光效率好、功耗低的优点。随着显示技术的飞速发展，触控技术已经成为显示产品必不可少的部分。然而，目前的微型发光二极管显示面板的触控部件和显示部件是相互独立且层叠设置的，导致微型发光二极管显示面板的触控显示装置厚度较大，进而也缩小了微型发光二极管显示面板的应用范围。\n\n发明内容\n\n[0003]本申请实施例提供了一种具有内嵌触控结构的微型发光二极管显示面板，可以降低微型发光二极管显示面板的厚度，进而增大微型发光二极管显示器的应用范围。\n\n[0004]本申请提供了一种微型发光二极管显示面板，包括：\n\n[0005]多个微型发光二极管；\n\n[0006]阵列基板，包括第一金属层，第一金属层包括多个第一连接电极和多个第二连接电极，每一第一连接电极和对应的第二连接电极电性连接于对应的微型发光二极管；\n\n[0007]其中，多个第一连接电极和多个第二连接电极中的至少一个为复用电极，在显示阶段，每一复用电极驱动对应的微型发光二极管发光；\n\n[0008]其中，在触控阶段，每一复用电极复用为触控电极。\n\n[0009]在本申请的显示面板中，在触控阶段，多个第二连接电极的至少一部分复用为触控电极，多个第一连接电极不复用为触控电极。\n\n[0010]在本申请的显示面板中，在触控阶段，多个第一连接电极和多个第二连接电极均复用为触控电极。\n\n[0011]在本申请的显示面板中，触控电极包括感应触控电极和接收触控电极，在触控阶段，多个第一连接电极的至少一部分复用为感应触控电极，多个第二连接电极的至少一部分复用为接收触控电极。\n\n[0012]在本申请的显示面板中，触控电极包括感应触控电极或接收触控电极，在触控阶段，多个第一连接电极和多个第二连接电极中的至少一部分复用为感应触控电极和接收触控电极。\n\n[0013]在本申请的显示面板中，第一金属层还包括第三触控电极。\n\n[0014]在本申请的显示面板中，每一触控电极包括相互连接的多个复用电极。\n\n[0015]在本申请的显示面板中，阵列基板包括基底和第二金属层，第二金属层位于基底与第一金属层之间，第一金属层与第二金属层之间设置有第一绝缘层，第二金属层还包括多个触控连接电极，每一触控连接电极连接于对应的两复用电极之间。\n\n[0016]本申请提供了一种一种微型发光二极管显示面板的制造方法，包括：\n\n[0017]在基底的一侧形成第三金属层，第三金属层包括薄膜晶体管的源极和漏极；\n\n[0018]在第三金属层上形成第二绝缘层，第二绝缘包括第一过孔；\n\n[0019]在第二绝缘层上形成第二金属层，第二金属层包括多个触控连接电极和多条触控走线；\n\n[0020]在第二金属层上形成第一绝缘层；第一绝缘层包括第二过孔和第三过孔，第二过孔在基底上的正投影与第一过孔在基底上的正投影至少部分重合；\n\n[0021]在第一绝缘层上形成第一金属层，第一金属层包括多个第一连接电极和多个第二连接电极，第一连接电极通过第一过孔和第二过孔连接于薄膜晶体管的源极或漏极，多个第一连接电极和多个第二连接电极中的至少一个为复用电极，每一复用电极在显示阶段驱动对应的微型发光二极管发光，每一复用电极在触控阶段复用为触控电极，每一触控电极包括相互连接的多个复用电极，每一触控连接电极连接于对应的两复用电极之间，触控走线连接于对应的触控电极的触控连接电极；\n\n[0022]安装微型发光二极管，使得每一第一连接电极和对应的第二连接电极电性连接于对应的微型发光二极管。\n\n[0023]本申请还提供了一种显示装置，显示装置包括上述任意一种显示面板。\n\n[0024]本申请的有益效果为：通过将触控功能集成在微型发光二极管显示面板的内部，提出一种具有内嵌触控结构的微型发光二极管显示面板，不需要另外层叠设置触控部件，可以降低微型发光二极管显示面板的厚度和成本，进而增大微型发光二极管显示面板的应用范围。\n\n附图说明\n\n[0025]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0026]图1为本申请一实施例提供的微型发光二极管显示面板的断面结构示意图；\n\n[0027]图2为本申请一实施例提供的微型发光二极管显示面板的断面结构示意图；\n\n[0028]图3为本申请一实施例提供的微型发光二极管显示面板的断面结构示意图；\n\n[0029]图4为本申请一实施例提供的微型发光二极管显示面板的触控电极的俯视结构示意图；\n\n[0030]图5为本申请一实施例提供的微型发光二极管显示面板的触控电极的俯视结构示意图；\n\n[0031]图6为本申请一实施例提供的微型发光二极管显示面板的触控电极和触控走线的俯视结构示意图；\n\n[0032]图7为本申请一实施例提供的一种显示装置的示意图。\n\n具体实施方式\n\n[0033]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0034]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0035]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0036]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0037]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0038]请参阅图1～图6，本申请的实施例提供了一种微型发光二极管显示面板1000，包括：多个微型发光二极管111；阵列基板10，包括第一金属层21，第一金属层21包括多个第一连接电极211和多个第二连接电极212，每一第一连接电极211和对应的第二连接电极212电性连接于对应的微型发光二极管111；其中，多个第一连接电极211和多个第二连接电极212中的至少一个为复用电极，在显示阶段，每一复用电极驱动对应的微型发光二极管111发光；其中，在触控阶段，每一复用电极复用为触控电极。\n\n[0039]本申请的有益效果为：通过将触控功能集成在微型发光二极管显示面板的内部，不需要另外层叠设置触控部件，可以降低微型发光二极管显示面板的厚度和成本，进而增大微型发光二极管显示面板的应用范围。\n\n[0040]具体的，例如阵列基板10包括薄膜晶体管100，薄膜晶体管100包括有源层13、栅绝缘层14、栅极15、层间绝缘层16、源极171(或源极172)、漏极172(或漏极171)，第一连接电极211电性连接于薄膜晶体管100的源极171(或源极172)或漏极172(或漏极171)。微型发光二极管111包括第一安装电极1111、第二安装电极1112和微型发光二极管本体1113，第一安装电极1111可以为微型发光二极管111的阳极或者阴极，第二安装电极1112可以为微型发光二极管111的阴极或者阳极，第一连接电极211和第二连接电极212其中之一连接于薄膜晶体管100的源极171(或源极172)或漏极172(或漏极171)，如图1～图3所示，第一安装电极1111电性连接于第一连接电极211，第二安装电极1112电性连接于第二连接电极212。需要说明的是，虽然本申请举例说明了阵列基板10或者薄膜晶体管100的结构，但不限于此。\n\n[0041]具体的，第一连接电极211和多个第二连接电极212中的至少一个为复用电极，即采用分时复用的方式，在显示阶段，每一复用电极驱动对应的微型发光二极管111发光，在在触控阶段，每一复用电极复用为触控电极起到触控功能。例如具体包括：驱动模块将每一帧分为显示阶段以及触控阶段；在显示阶段时，驱动模块向复用电极提供显示信号；在触控阶段时，驱动模块向复用电极提供触控信号。其中，每一微型发光二极管111包括第一安装电极1111、第二安装电极1112，阵列基板10包括与每一微型发光二极管111对应连接的第一连接电极211和第二连接电极212，作为复用电极的第一连接电极211或/和第二连接电极212在显示阶段可以驱动与其相连接的微型发光二极管111。\n\n[0042]具体的，微型发光二极管111包括Micro-LED，但不限于此。\n\n[0043]在一些实施例中，请参阅图1、图3，在触控阶段，多个第二连接电极212的至少一部分复用为触控电极，多个第一连接电极211不复用为触控电极。\n\n[0044]在一些实施例中，请参阅图1、图3，在触控阶段，多个第一连接电极211和多个第二连接电极212中的一种复用为触控电极，多个第一连接电极211和多个第二连接电极212中的另一种不复用。\n\n[0045]具体的，例如多个第二电极包括复用为触控电极的一部分或者不复用的一部分，例如多个第二电极全部为复用电极。通过将第一连接电极211和多个第二连接电极212中的一种复用为触控电极，简化了制作工艺，不用另外再制作触控电极。\n\n[0046]在一些实施例中，请参阅图1、图3，在触控阶段，多个第一连接电极211和多个第二连接电极212均复用为触控电极。\n\n[0047]具体的，多个第一连接电极211和多个第二连接电极212都为复用电极，采用分时复用的方式，在显示阶段，每一复用电极驱动对应的微型发光二极管111发光，在在触控阶段，每一复用电极复用为触控电极起到触控功能。通过将多个第一连接电极211和多个第二连接电极212均复用为触控电极，简化了制作工艺，不用另外再制作触控电极。\n\n[0048]在一些实施例中，触控电极包括感应触控电极和接收触控电极，在触控阶段，多个第一连接电极211的至少一部分复用为感应触控电极，多个第二连接电极212的至少一部分复用为接收触控电极。\n\n[0049]具体的，例如内嵌的触控功能的结构为互容式触控，触控电极包括感应触控电极和接收触控电极，例如第一连接电极211复用为感应触控电极和第二连接电极212复用为接收触控电极，例如第二连接电极212复用为感应触控电极和第一连接电极211复用接收触控电极。需要说明的是：多个第一连接电极211可以全部或部分复用，多个第二连接电极212可以全部或部分复用。本实施例中举例提出了内嵌互容式触控的设置方法。\n\n[0050]在一些实施例中，触控电极包括感应触控电极或接收触控电极，在触控阶段，多个第一连接电极211和多个第二连接电极212中的至少一部分复用为感应触控电极和接收触控电极。\n\n[0051]具体的，例如内嵌的触控功能的结构为互容式触控，触控电极包括感应触控电极和接收触控电极，例如第一连接电极211复用为感应触控电极和接收触控电极，例如第二连接电极212复用为感应触控电极和接收触控电极。需要说明的是：多个第一连接电极211可以全部或部分复用，多个第二连接电极212可以全部或部分复用。本实施例中举例提出了内嵌互容式触控的设置方法。\n\n[0052]在一些实施例中，请参阅图2，第一金属层21还包括第三触控电极213。\n\n[0053]具体的，第三触控电极213可以设置在第一连接电极211或/和第二连接电极212之间，第三触控电极213可以与复用的第一连接电极211或/和第二连接电极212一起构成触控电极。第三触控电极213的设置可以辅助复用电极起到触控功能，提升触控性能。\n\n[0054]在一些实施例中，可以只设置第三触控电极213，此时，第一连接电极211和第二连接电极212可以不复用为触控电极，通过第三触控电极213的设置就可以实现触控功能。例如在互容式触控结构中第三触控电极213设置为感应触控电极和接收触控电极，例如在自容式触控结构中第三触控电极213设置为触控电极。当只设置第三触控电极213为触控电极时，也可以实现很好的触控功能，为另外一种内嵌触控设置方法。\n\n[0055]在一些实施例中，上述实施例中的每一触控电极可以设置一个第一连接电极211或/和第二连接电极212；\n\n[0056]在一些实施例中，上述实施例中的每一触控电极可以设置一个第一连接电极211或/和第二连接电极212、以及一个第三触控电极；\n\n[0057]在一些实施例中，上述实施例中的每一触控电极可以设置一个第三触控电极213。\n\n[0058]在一些实施例中，每一触控电极包括一个复用电极。\n\n[0059]具体的，例如每一触控电极包括作为复用电极的一个第一连接电极211或/和一个第二连接电极212。\n\n[0060]在一些实施例中，每一触控电极包括一个复用电极和第三触控电极213。\n\n[0061]具体的，例如每一触控电极包括作为复用电极的一个第一连接电极211或/和一个第二连接电极212、以及一个第三触控电极213.\n\n[0062]在一些实施例中，每一触控电极包括一个第三触控电极213。\n\n[0063]在一些实施例中，请参阅图4，每一触控电极包括相互连接的多个复用电极。\n\n[0064]具体的，例如当复用电极为第一连接电极211和第二连接电极212中的一种时，每一触控电极包括多个第一连接电极211，或者每一触控电极包括多个第二连接电极212。\n\n[0065]具体的，例如当复用电极为第一连接电极211和第二连接电极212中的两种时，每一触控电极包括多个第一连接电极211或/和多个第二连接电极212。\n\n[0066]具体的，例如当复用电极为第一连接电极211和第二连接电极212中的两种时，每一触控电极包括一个第一连接电极211和多个第二连接电极212，或每一触控电极包括多个第一连接电极211和一个第二连接电极212\n\n[0067]在一些实施例中，请参阅图5，每一触控电极包括相互连接的一个或多个复用电极、以及一个或多个第三触控电极213。\n\n[0068]在一些实施例中，每一触控电极包括相互连接的多个第三触控电极213。\n\n[0069]需要说明的是，上述实施例中举例说明每一触控电极中第一连接电极211、第二连接电极212、以及第三触控电极213的数量，本申请不限定每一触控电极所包括的复用电极和第三触控电极的数量。触控电极的设置方式有多种，可以依据显示面板的设计需要进行选择，扩大内嵌触控设置的结构范围和应用范围。\n\n[0070]在一些实施例中，请参阅图1～图5，阵列基板10包括基底11和第二金属层19，第二金属层位于基底11与第一金属层21之间，第一金属层21与第二金属层19之间设置有第一绝缘层20，第二金属层19还包括多个触控连接电极191，每一触控连接电极191连接于对应的两复用电极之间。\n\n[0071]具体的，例如每一触控电极包括多个第一连接电极211或/和多个第二连接电极212，同一触控电极内的第一连接电极211或/和第二连接电极212之间通过触控连接电极191连接成一个整体。\n\n[0072]在一些实施例中，请参阅图1～图5，阵列基板10包括基底11和第二金属层19，第二金属层位于基底11与第一金属层21之间，第一金属层21与第二金属层19之间设置有第一绝缘层20，第二金属层19还包括多个触控连接电极191，每一触控连接电极191连接于对应的两复用电极、或对应的复用电极与第三触控电极213、或对应的两第三触控电极213。\n\n[0073]具体的，例如每一触控电极包括多个第一连接电极211或/和多个第二连接电极212、以及多个第三触控电极213，第一连接电极211或/和第二连接电极212、以及第三触控电极213之间通过触控连接电极191连接成一个整体。\n\n[0074]具体的，例如每一触控电极包括多个第三触控电极213，第三触控电极213之间通过触控连接电极191连接成一个整体。\n\n[0075]通过触控连接电极191将多个复用电极或/和第三触控电极213连接作为一个触控电极，可以选择设置触控电极的面积和范围，增加了内嵌触控设置的结构范围和应用范围，并提高触控性能。\n\n[0076]在一些实施例中，请参阅图1、图2、图6，第二金属层19包括多条触控走线192和多个触控连接电极191，每一触控走线192连接于对应的触控电极或触控连接电极191。\n\n[0077]具体的，例如在内嵌的触控功能的结构为自容式触控，触控电极为触控感应电极，触控走线192为触控驱动走线，触控走线192连接于对应的触控电极。\n\n[0078]在一些实施例中，请参阅图3、图6，阵列基板10包括第三金属层17，第三金属层17位于基底11与第二金属层19之间，第二金属层19与第三金属层17之间设置有第二绝缘层18，其中，第三金属层17包括多条触控走线173和薄膜晶体管100的源极171(或源极172)、漏极172(或漏极171)，每一触控走线173连接于对应的触控电极。\n\n[0079]具体的，例如在内嵌的触控功能的结构为自容式触控，触控电极为触控感应电极，触控走线173为触控驱动走线，触控走线173连接于对应的触控电极。\n\n[0080]通过触控走线设置与源极171(或源极172)、漏极172(或漏极171)同层或不同层设置，增加了内嵌触控设置的结构范围和应用范围。\n\n[0081]本申请提供了一种微型发光二极管显示面板1000的制造方法，请参阅图1、图6，制造方法包括：\n\n[0082]S1：在基底11的一侧形成第三金属层17，第三金属层17包括薄膜晶体管100的源极171(或源极172)和漏极172(或漏极171)；\n\n[0083]S2：在第三金属层17上形成第二绝缘层18，第二绝缘包括第一过孔181；\n\n[0084]S3：在第二绝缘层18上形成第二金属层19，第二金属层19包括多个触控连接电极191和多条触控走线192；\n\n[0085]S4：在第二金属层19上形成第一绝缘层20；第一绝缘层20包括第二过孔201和第三过孔202，第二过孔201在基底11上的正投影与第一过孔181在基底11上的正投影至少部分重合；\n\n[0086]S5：在第一绝缘层上形成第一金属层21，第一金属层21包括多个第一连接电极211和多个第二连接电极212，第一连接电极211通过第一过孔181和第二过孔201连接于薄膜晶体管100的源极171(或源极172)或漏极172(或漏极171)，多个第一连接电极211和多个第二连接电极212中的至少一个为复用电极，每一复用电极在显示阶段驱动对应的微型发光二极管111发光，每一复用电极在触控阶段复用为触控电极，每一触控电极包括相互连接的多个复用电极，每一触控连接电极191连接于对应的两复用电极之间，触控走线192连接于对应的触控电极的触控连接电极191；\n\n[0087]S6:安装微型发光二极管111，使得每一第一连接电极211和对应的第二连接电极212电性连接于对应的微型发光二极管111。\n\n[0088]在一些实施例的制造方法中，还包括在基底11的一侧形成缓冲层12，在缓冲层12上形成薄膜晶体管100，薄膜晶体管包括有源层13、栅绝缘层14、栅极15、层间绝缘层16、源极171(或源极172)、漏极172(或漏极171),其中，薄膜晶体管100的结构不做限定，例如薄膜晶体管100可以为顶栅型或底栅型。\n\n[0089]在一些实施例的制造方法中，触控走线可设置于第三金属层17上，请参阅图3，第三金属层17包括触控触控走线173。\n\n[0090]需要说明的是，在上述制造方法中，安装微型发光二极管111于阵列基板10上，每一微型发光二极管111与对应的第一连接电极211和对应的第二连接电极212的电性连接方式包括但不限于焊接，连接材料可以为锡膏。\n\n[0091]通过上述制造方法，可以制造出高性能的具有内嵌触控功能的微型发光二极管显示面板1000。\n\n[0092]本申请还提供了一种显示装置3000，请参阅图7，显示装置3000包括上述任意一种微型发光二极管显示面板1000，显示装置还可以包括但不限于外壳、保护部件等其他部件2000。\n\n[0093]本申请通过将触控功能集成在微型发光二极管显示面板的内部，提出一种具有内嵌触控结构的微型发光二极管显示面板，不需要另外层叠设置触控部件，可以降低微型发光二极管显示面板的厚度和成本，进而增大微型发光二极管显示面板的应用范围。\n\n[0094]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0095]以上对本申请实施例进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10819, 23873, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种显示面板及其制备方法、显示装置。\n\n背景技术\n\n[0002]高屏占比显示装置因具有更窄的屏幕边框、更大的显示面积，可以为消费者带来更好的体验，成为显示领域的研究重点。但现有的全面屏显示装置由于屏下传感技术与光学显示无法在空间上重合，使得显示装置在设置传感器的区域仍不能实现显示；此外，为实现屏下传感技术，显示装置的厚度会受到一定影响，不利于用户的体验。因此，如何实现显示装置真正意义上的全屏显示，并减小显示装置的厚度成为研究的热点问题。\n\n发明内容\n\n[0003]本申请实施例提供一种显示面板及其制备方法、显示装置，可以解决屏下传感技术与光学显示无法在空间上重合，显示装置较厚的问题。\n\n[0004]本申请实施例提供一种显示面板，包括第一显示区，所述显示面板包括：\n\n[0005]多个第一像素单元，多个所述第一像素单元位于所述第一显示区内，每个所述第一像素单元包括透光区和与所述透光区相邻设置的发光器件；\n\n[0006]第一基板，所述第一基板包括位于所述第一显示区内的第一部分，所述第一部分包括第一驱动电路以及位于所述第一驱动电路之上的电连接线；\n\n[0007]其中，所述发光器件安装于所述第一部分，所述发光器件包括背离所述第一驱动电路的电极，所述电极通过所述电连接线与所述第一驱动电路电性连接。\n\n[0008]在一些实施例中，所述发光器件为自发光显示器件。\n\n[0009]在一些实施例中，所述发光器件包括次毫米发光二极管或微型发光二极管中的至少一种。\n\n[0010]在一些实施例中，所述发光器件还包括安装于所述第一基板的主体，所述电极自所述主体延伸而出，所述电连接线沿所述主体的表面延伸。\n\n[0011]在一些实施例中，所述电极包括自所述主体延伸而出的第一电极和第二电极；所述电连接线包括第一线和第二线，所述第一线电性连接所述第一电极和所述第一驱动电路，所述第一线沿所述主体的表面延伸，所述第二线电性连接所述第二电极和所述第一驱动电路，所述第二线沿所述主体的表面延伸。\n\n[0012]在一些实施例中，所述电连接线的制备材料包括Ti、Al、Mo、ITO中的至少一种。\n\n[0013]在一些实施例中，所述电连接线的截面尺寸为大于或等于100纳米且小于或等于1000纳米。\n\n[0014]在一些实施例中，所述显示面板还包括与所述第一显示区相邻设置的第二显示区，所述显示面板还包括位于所述第二显示区内的多个第二像素单元，多个所述第二像素单元的发光方式与多个所述第一像素单元的发光方式不同。\n\n[0015]在一些实施例中，每一所述第二像素单元为液晶显示像素单元。\n\n[0016]在一些实施例中，所述第一基板还包括位于所述第二显示区内的第二部分；所述第二部分包括第二驱动电路，所述第二驱动电路用于驱动多个所述第二像素单元。\n\n[0017]在一些实施例中，所述电连接线的材料与所述第二驱动电路中的导电层同层设置且材料相同。\n\n[0018]在一些实施例中，所述导电层包括像素电极，所述电连接线与所述像素电极同层设置且材料相同。\n\n[0019]在一些实施例中，所述显示面板还包括与所述第一基板相对设置的第二基板，所述第二基板的对应所述第二部分的部分包括彩膜单元。\n\n[0020]在一些实施例中，所述显示面板还包括：\n\n[0021]第一偏光片，位于所述第一基板远离所述第二基板的一侧，所述第一偏光片在对应所述第一部分的部分设置有过孔；\n\n[0022]第二偏光片，位于所述第二基板远离所述第一基板的一侧。\n\n[0023]在一些实施例中，所述显示面板还包括：\n\n[0024]背光模组，位于所述第一偏光片远离所述第一基板的一侧，所述背光模组的对应所述第一部分的部分设置有过孔。\n\n[0025]在一些实施例中，在俯视视角下，所述发光器件的面积小于或等于所述透光区的面积。\n\n[0026]本申请还提供一种显示面板的制备方法，包括以下步骤：\n\n[0027]S10：形成第一基板，所述第一基板包括第一部分和邻近所述第一部分的第二部分，所述第一部分包括第一驱动电路，所述第二部分包括第二驱动电路；\n\n[0028]S20：在所述第一部分上形成发光器件；其中，所述发光器件包括背离所述第一驱动电路的电极；\n\n[0029]S30：利用沉积工艺形成电连接线，所述电连接线电性连接所述电极与所述第一驱动电路；\n\n[0030]其中，所述第一基板的第一部分对应所述显示面板的第一显示区，所述第一基板的第二部分对应所述显示面板的邻近所述第一显示区的第二显示区，所述显示面板包括位于所述第一显示区内的多个第一像素单元和位于所述第二显示区内的多个第二像素单元，多个所述第一像素单元和多个所述第二像素单元的发光方式不同，每一所述第一像素单元包括透光区和与所述透光区相邻设置的所述发光器件，多个所述第二像素单元被所述第二驱动电路驱动。\n\n[0031]在一些实施例中，所述发光器件包括次毫米发光二极管或微型发光二极管中的至少一种。\n\n[0032]本申请还提供一种显示装置，包括所述的显示面板或如所述的制备方法制得的显示面板；以及传感器，所述传感器正对所述第一显示区。\n\n[0033]本申请实施例提供的显示面板及其制备方法、显示装置，所述显示面板包括第一显示区，所述显示面板包括：多个第一像素单元，多个所述第一像素单元位于所述第一显示区内，每个所述第一像素单元包括透光区和与所述透光区相邻设置的发光器件；第一基板，所述第一基板包括位于所述第一显示区内的第一部分，所述第一部分包括第一驱动电路以及位于所述第一驱动电路之上的电连接线；其中，所述发光器件安装于所述第一部分，所述发光器件包括背离所述第一驱动电路的电极，所述电极通过所述电连接线与所述第一驱动电路电性连接，以使所述显示面板实现屏下传感技术与光学显示在空间上的重合，降低所述显示面板的厚度。采用所述的显示面板制得的显示装置，亦可实现屏下传感技术与光学显示在空间上的重合，降低所述显示装置的厚度。\n\n附图说明\n\n[0034]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0035]图1A～图1C为本申请的实施例提供的显示面板的结构示意图；\n\n[0036]图1D～图1E为本申请的实施例提供的第一基板的第一部分的结构示意图；\n\n[0037]图2A～图2B为本申请的实施例提供的第一像素单元的俯视图；\n\n[0038]图3A～图3F为本申请的实施例提供的显示面板的俯视图；\n\n[0039]图4为本申请的实施例提供的显示面板的制备流程图；\n\n[0040]图5A～图5D为本申请的实施例提供的显示面板的制备过程示意图；\n\n[0041]图6为本申请的实施例提供的显示装置的结构示意图。\n\n[0042]附图标记：\n\n[0043]100a-第一显示区；100b-第二显示区；102a-第一部分；102b-第二部分；\n\n[0044]101a-第一子像素；1012a-电极；1012b-第一电极；1012c-第二电极；\n\n[0045]1013a-第一色转换单元；1013b-第二色转换单元；1041a-子彩膜单元；\n\n[0046]1022a-第一线；1022b-第二线；1012d-主体；1012e-发光器件；\n\n[0047]101-第一像素单元；1011-透光区、1012-发光器件；1013-色转换膜；\n\n[0048]102-第一基板；1021-第一驱动电路；1022-电连接线；1023-第二驱动电路；\n\n[0049]103-第二像素单元；104-第二基板；1041-彩膜单元；1051-第一偏光片；1052-第二偏光片；106-液晶分子；107-框胶；108-背光模组；601-传感器。\n\n具体实施方式\n\n[0050]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0051]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0052]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0053]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0054]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0055]具体的，请参阅图1A～图1C，其为本申请的实施例提供的显示面板的结构示意图；如图1D～图1E所示，其为本申请的实施例提供的第一基板的第一部分的结构示意图；如图2A～图2B所示，其为本申请的实施例提供的第一像素单元的俯视图；如图3A～图3F所示，其为本申请的实施例提供的显示面板的俯视图；所述显示面板，包括第一显示区100a，所述显示面板包括：\n\n[0056]多个第一像素单元101，多个所述第一像素单元101位于所述第一显示区100a内，每个所述第一像素单元101包括透光区1011和与所述透光区1011相邻设置的发光器件1012；\n\n[0057]第一基板102，所述第一基板102包括位于所述第一显示区100a内的第一部分102a，所述第一部分102a包括第一驱动电路1021以及位于所述第一驱动电路1021之上的电连接线1022；\n\n[0058]其中，所述发光器件1012安装于所述第一部分102a，所述发光器件1012包括背离所述第一驱动电路1021的电极1012a，所述电极1012a通过所述电连接线1022与所述第一驱动电路1021电性连接。\n\n[0059]由于每个所述第一像素单元101包括所述透光区1011和所述发光器件1012，因此，所述透光区1011使得所述第一显示区100a具备一定的透过率，所述透光区1011可以为实现屏下传感技术提供信号传输的通道，而所述发光器件1012可以保证所述第一像素单元101的正常显示，使得所述显示面板实现了屏下传感技术与光学显示在空间上的重合，便于所述显示面板实现全面屏设计。\n\n[0060]为使所述显示面板在所述第一显示区100a具有透明显示的功能，在俯视视角下，所述发光器件1012的面积小于或等于所述透光区1011的面积，以使所述第一显示区100a具备一定的光透过率，如图2A～图2B所示。\n\n[0061]具体地，所述第一像素单元101包括多个第一子像素101a，每个所述第一子像素101a包括所述透光区1011和所述发光器件1012，在每个所述第一子像素101a内，所述透光区1011的面积占所述第一子像素101a的面积的50％～99％。\n\n[0062]进一步地，每个所述发光器件1012的尺寸为大于或等于1微米且小于或等于500微米；每个所述第一子像素101a的尺寸为大于或等于10微米且小于或等于1000微米；其中，所述发光器件1012的尺寸指在俯视视角下所述发光器件1012的长或宽；与之相似地，所述第一子像素101a的尺寸指在俯视视角下所述第一子像素101a的长或宽。\n\n[0063]请继续参阅图1A～图1C和图2A～图2B，所述发光器件1012为自发光显示器件；具体地，所述发光器件1012包括次毫米发光二极管或微型发光二极管中的至少一种；进一步地，所述发光器件1012为微型发光二极管，以使所述第一显示区100a在具有较小的发光面积时，仍能保证所述第一显示区100a的显示质量不受影响。所述发光器件1012以内置式形式设置于所述第一基板102的所述第一部分102a，可以避免采用外挂式形式设置所述发光器件1012时，所述显示面板在所述第一显示区100a出现画面悬浮的问题。\n\n[0064]请继续参阅图1A～图1C和图1D～图1E，所述发光器件1012还包括安装于所述第一基板102的主体1012d，所述电极1012a自所述主体1012d延伸而出，所述电连接线1022沿所述主体1012d的表面延伸，所述电连接线1022的截面尺寸为大于或等于100纳米且小于或等于1000纳米，以降低所述显示面板的厚度。\n\n[0065]进一步地，所述电极1012a包括自所述主体1012d延伸而出的第一电极1012b和第二电极1012c；所述电连接线1022包括第一线1022a和第二线1022b，所述第一线1022a电性连接所述第一电极1012b和所述第一驱动电路1021，所述第一线1022a沿所述主体1012d的表面延伸；所述第二线1022b电性连接所述第二电极1012c和所述第一驱动电路1021，所述第二线1022b沿所述主体1012d的表面延伸。\n\n[0066]所述电连接线1022的制备材料包括Ti(钛)、Al(铝)、Mo(钼)、ITO(氧化铟锡)中的至少一种；进一步地，为避免所述电连接线1022对所述第一显示区100a的透光率造成影响，所述电连接线1022的制备材料为透明金属材料；其中，所述透明金属材料包括氧化铟锡。更进一步地，所述电极1012a的制备材料与所述电连接线1022的制备材料相同；具体地，所述电极1012a的制备材料为透明金属材料；所述透明金属材料包括氧化铟锡，以保证所述第一显示区100a具有较高的透光率。\n\n[0067]请继续参阅图1A～图1C，所述显示面板还包括与所述第一显示区100a相邻设置的第二显示区100b，所述显示面板还包括位于所述第二显示区100b内的多个第二像素单元103，多个所述第二像素单元103的发光方式与多个所述第一像素单元101的发光方式不同。\n\n[0068]具体地，每一所述第二像素单元103为液晶显示像素单元。\n\n[0069]所述第一基板102还包括位于所述第二显示区100b内的第二部分102b；所述第二部分102b包括第二驱动电路1023，所述第二驱动电路1023用于驱动多个所述第二像素单元103。\n\n[0070]为简化制程，所述电连接线1022的材料与所述第二驱动电路1023中的导电层同层设置且材料相同；进一步地，所述导电层包括像素电极，所述电连接线1022与所述像素电极同层设置且材料相同。\n\n[0071]所述显示面板还包括与所述第一基板102相对设置的第二基板104，所述第二基板104的对应所述第二部分102b的部分包括彩膜单元1041，如图1A所示。\n\n[0072]在图1A所示的显示面板中，所述发光器件1012包括红色发光器件、绿色发光器件、蓝色发光器件等以实现所述显示面板的全彩显示。\n\n[0073]若多个所述发光器件1012发出的光为单色光，则所述显示面板可利用色转换膜实现全彩显示。\n\n[0074]具体地，请继续参阅图1B和图1C，所述显示面板还包括位于所述发光器件1012远离所述第一基板102一侧的色转换膜1013，所述色转换膜1013包括第一色转换单元1013a和第二色转换单元1013b；其中，所述第一色转换单元1013a将所述发光器件1012发出的第一波长的光转换为第二波长的光，所述第二色转换单元1013b用于透射所述发光器件1012发出的光。即若所述发光器件1012为蓝色发光器件，则所述第一色转换单元1013a吸收所述发光器件1012发出的蓝光发出红光、绿光、橙光或黄光等颜色的光，而所述第二色转换单元1013b透射所述发光器件1012发出的蓝光。\n\n[0075]进一步地，多个所述第一色转换单元1013a吸收所述发光器件1012发出的光可以不同，即多个所述第一色转换单元1013a还包括第一子色转换单元和第二子色转换单元，所述第一子色转换单元吸收所述发光器件1012发出的光与所述第二子色转换单元吸收所述发光器件1012发出的光的颜色不同。\n\n[0076]为节约制程，所述色转换膜1013可位于所述第二基板104内；更进一步地，所述色转换膜1013的所述第一色转换单元1013a和所述第二色转换单元1013b可以与所述第二基板104上的所述彩膜单元1041同层制备。即所述第二基板104的对应所述第一部分102a的部分包括所述第一色转换单元1013a和所述第二色转换单元1013b，如图1C所示。\n\n[0077]为避免所述色转换膜1013对所述透光区1011造成遮挡，影响透光率，所述色转换膜1013中的所述第一色转换单元1013a和所述第二色转换单元1013b的面积等于所述发光器件1012的面积，且在俯视视角下，所述第一色转换单元1013a和所述第二色转换单元1013b分别覆盖与之对应的所述发光器件1012，如图2B所示。\n\n[0078]请继续参阅图1A～图1C，为避免所述第一显示区100a和所述第二显示区100b在交界处出现显示中断或显示不连续等问题，在所述第一显示区100a和所述第二显示区100b的交界处，所述第一像素单元101与所述第二像素单元103相邻设置。\n\n[0079]具体地，所述第二像素单元103包括对应的所述彩膜单元1041，在俯视视角下，所述第一像素单元101与所述彩膜单元1041在所述第一显示区100a和所述第二显示区100b交界处相接。\n\n[0080]进一步地，在图1A所示的显示面板中，所述彩膜单元1041中的靠近所述第一显示区100a和所述第二显示区100b交界处的子彩膜单元1041a与所述发光器件1012中靠近所述第一显示区100a和所述第二显示区100b交界处的发光器件1012e的颜色相同，即若所述子彩膜单元1041a为红色彩膜单元，则所述发光器件1012e也为红色发光器件。与之相似地，在图1B～图1C所示的显示面板中，所述彩膜单元1041中的靠近所述第一显示区100a和所述第二显示区100b交界处的子彩膜单元1041a与所述色转换膜1013中靠近所述第一显示区100a和所述第二显示区100b交界处的所述第一色转换单元1013a或第二色转换单元1013b a的颜色相同。\n\n[0081]请继续参阅图1A～图1C，所述显示面板还包括：\n\n[0082]第一偏光片1051，位于所述第一基板102远离所述第二基板104一侧，所述第一偏光片1051的对应所述第一部分102a的部分设置有过孔；\n\n[0083]第二偏光片1052，位于所述第二基板104远离所述第一基板102的一侧。\n\n[0084]所述显示面板还包括位于所述第一基板102与所述第二基板104之间的液晶分子106和框胶107。\n\n[0085]由于所述第一偏光片1051在对应所述第一部分102a的部分设置有过孔，所以，所述液晶分子1061在所述第一显示区100a虽改变了光的偏振状态，但因只受到所述第二偏光片1052作用而无法实现调光功能，因此，所述液晶分子1061不会对所述第一显示区100a的显示造成影响。\n\n[0086]可以理解的，所述第二偏光片1052在对应所述第一部分102a的部分也可设置所述过孔，如图1C所示。\n\n[0087]请继续参阅图1A～图1C，所述显示面板还包括：\n\n[0088]背光模组108，位于所述第一偏光片1051远离所述第一基板102的一侧，所述背光模组108的对应所述第一部分102a的部分设置有过孔。\n\n[0089]请继续参阅图1A～图1C，为保证所述透光区1011的透光率，所述第一基板102的制备材料为高透光率材料，包括玻璃、无色聚酰亚胺材料、亚克力材料等。\n\n[0090]所述第一基板102还包括衬底、缓冲层等未示出部分；所述第一驱动电路1021还包括第一薄膜晶体管、第一控制线路等未示出部分。所述第二驱动电路1023还包括第二薄膜晶体管、第二控制线路等未示出部分。\n\n[0091]所述第一驱动电路1021驱动所述发光器件1012的方式包括有源选址驱动方式和无源选址驱动方式；具体地，所述有源选址方式包括采用低温多晶硅技术、非晶硅技术、氧化铟镓锌技术的驱动方式；在所述第一显示区100a的面积较小的情况下(如小于10*10mm)，所述第一驱动电路1021采用无源选址驱动方式驱动所述发光器件1012，以使所述显示面板获得较高的光透过率。\n\n[0092]由于所述第一显示区100a与所述第二显示区100b采用不同的发光方式进行显示，所以所述第一薄膜晶体管和所述第二薄膜晶体管在尺寸上可以存在差别，所述第一薄膜晶体管和所述第二薄膜晶体管的尺寸可分别根据所述第一显示区100a和所述第二显示区100b的设计需求进行光电匹配得到，在此对其不再进行赘述。\n\n[0093]所述第一显示区100a和所述第二显示区100b之间的显示亮度差异可以根据后续的软件算法进行亮度匹配；所述第一显示区100a和所述第二显示区100b之间的显示精度差异可以通过分辨率的匹配设计进行优化，在此对其不再进行赘述。\n\n[0094]在图1A～图1C所示的显示面板中，均以多个所述第二像素单元103的发光方式与多个所述第一像素单元101的发光方式不同为例进行说明。可以理解的，每一所述第二像素单元103也可为与所述第一像素单元101采用相同的发光方式，即所述第二像素单元103包括多个第二发光器件，所述第二发光器件包括有机发光二极管、次毫米发光二极管或微型发光二极管中的至少一种。\n\n[0095]进一步地，在所述第一显示区100a和所述第二显示区100b的交界处，所述第一像素单元101与所述第二像素单元103相邻设置。\n\n[0096]具体地，在俯视视角下，所述第一像素单元101与所述第二像素单元103在所述第一显示区100a和所述第二显示区100b交界处相接。\n\n[0097]进一步地，所述第二发光器件中的靠近所述第一显示区100a和所述第二显示区100b交界处的第二子发光器件与所述发光器件1012中靠近所述第一显示区100a和所述第二显示区100b交界处的发光器件1012e的颜色相同，即若所述第二子发光器件为绿色发光器件，则所述发光器件1012e也为绿色发光器件。\n\n[0098]请继续参阅图3A～图3F，在俯视视角下，所述第一显示区100a可以位于所述显示面板上部，也可位于所述显示面板的下部，所述第一显示区100a的位置可根据实际的设计需求进行设计，在此不再对其进行赘述。\n\n[0099]在俯视视角下，所述第一显示区100a的形状包括圆形、多边形中的一种或组合，所述第一显示区100a的具体形状也可根据实际的设计需求进行设计，在此不再对其进行赘述。\n\n[0100]此外，所述显示面板还可包括多个所述第一显示区100a，多个所述第一显示区100a与所述第二显示区100b相邻设置，多个所述第一显示区100a的具体分布方式根据实际的需求进行设计，在此不再对其进行赘述。\n\n[0101]图3A～图3F所示的显示面板的形状、所述第一显示区100a、所述第二显示区100b的形状、位置等均为示例性说明，并不用于限制本申请，本领域的相关技术人员可根据实际需求进行设计。\n\n[0102]请参阅图4，其为本申请的实施例提供的显示面板的制备流程图；如图5A～图5D所示，其为本申请的实施例提供的显示面板的制备过程示意图。\n\n[0103]本申请还提供一种显示面板的制备方法，包括以下步骤：\n\n[0104]S10：形成第一基板102，所述第一基板102包括第一部分102a和邻近所述第一部分102a的第二部分102b，所述第一部分102a包括第一驱动电路1021，所述第二部分102b包括第二驱动电路1023，如图5A所示；\n\n[0105]S20：在所述第一部分102a上形成发光器件1012；其中，所述发光器件1012包括背离所述第一驱动电路1021的电极1012a，如图5B所示；\n\n[0106]S30：利用沉积工艺形成电连接线1022，所述电连接线1022电性连接所述电极1012a与所述第一驱动电路1021，如图5C所示；\n\n[0107]其中，所述第一基板102的第一部分102a对应所述显示面板的第一显示区100a，所述第一基板102的第二部分100b对应所述显示面板的邻近所述第一显示区100a的第二显示区100b，所述显示面板包括位于所述第一显示区100a内的多个第一像素单元和位于所述第二显示区100b内的多个第二像素单元103，多个所述第一像素单元和多个所述第二像素单元103的发光方式不同，每一所述第一像素单元包括透光区1011和与所述透光区1011相邻设置的所述发光器件1012，多个所述第二像素单元103被所述第二驱动电路1023驱动。\n\n[0108]其中，所述发光器件1012包括次毫米发光二极管或微型发光二极管中的至少一种。\n\n[0109]进一步地，所述发光器件1012为微型发光二极管；在所述步骤S20中，通过电磁力，静电力，范德华力等巨量转移方式将生长基板或中间基板上的所述发光器件1012转移至所述第一驱动电路1021上。所述发光器件1012的厚度为大于或等于1微米且小于或等于5微米；进一步地，所述发光器件1012的厚度等于3微米。\n\n[0110]所述第一显示区100a的面积小于或等于30*30mm；进一步地，所述第一显示区100a的面积小于或等于10*10mm，以便在所述第一部分102a采用巨量转移的方式制备所述发光器件1012时，在所述第一部分102a具有较好的转印良率，并实现成本的控制。此外，所述第一部分102a所需制备的所述发光器件1012的数目也会对所述发光器件1012的良率及产品成本造成影响，在所述第一部分102a所需制备的所述发光器件1012的数目较少，所述第一显示区100a的面积较小的情况下，在所述第一部分102采用巨量转移的方式制备所述发光器件1012时的良率也较高，对成本的控制也较有利。所述第一部分102a所需制备的所述发光器件1012的数目由设计需求确定，本领域相关技术人员可根据实际需求进行设置，在此对其不进行赘述。\n\n[0111]所述电连接线1022通过沉积工艺形成，所述沉积工艺包括电镀、化学镀、印镀、蒸渡、溅镀等方式。具体地，在步骤S30中，在所述发光器件1012远离所述第一基板102的一侧形成整面的电连接线层，然后采用黄光制程制得所述电连接线1022。或在步骤S30中，提供一金属掩膜板，利用所述金属掩膜板在所述发光器件1012和所述第一驱动电路1021表面形成所述电连接线1022。\n\n[0112]此外，所述电连接线1022还可采用光阻剥离的方式形成；具体地，在所述步骤S30中，在所述发光器件1012远离所述第一基板102的一侧形成整面的光阻层，然后对所述光阻层进行图形化，再利用沉积工艺制得所述电连接线1022，最后去除剩余的所述光阻层。\n\n[0113]所述电连接线1022的材料可以与第二驱动电路1023中的导电层同层设置且材料相同；所述电连接线1022的制备材料包括Ti(钛)、Al(铝)、Mo(钼)、ITO(氧化铟锡)中的至少一种。\n\n[0114]由于所述电连接线1022采用沉积工艺形成，所述电连接线1022的厚度可以保持在纳米级厚度；具体地，所述电连接线1022的截面尺寸为大于或等于100纳米且小于或等于1000纳米。若所述第二像素单元1023为液晶显示单元时，所述第一基板102与所述第二基板104对组成盒后的盒间距为大于或等于1微米且小于或等于5微米；进一步地，所述第一基板102与所述第二基板104对组成盒后的盒间距等于3微米，以降低对所述显示面板透光率的影响。\n\n[0115]若所述第二像素单元1023为液晶显示单元，则所述制备方法还包括以下步骤：\n\n[0116]S40：提供第二基板104，将所述第二基板104与所述第一基板102对组成盒，并在所述第一基板102和所述第二基板104之间注入液晶分子106；其中，所述第二基板104的对应所述第二部分102b的部分包括彩膜单元1041；所述液晶分子106位于框胶107界定的区域内；\n\n[0117]S50：在所述第一基板102远离所述第二基板104的一侧制备第一偏光片1051，在所述第二基板104远离所述第一基板102的一侧形成第二偏光片1052；其中，所述第一偏光片1051在对应所述第一部分102a的部分设置有过孔；\n\n[0118]S60：在所述第一偏光片1051远离所述第二基板104的一侧制备背光模组108；其中，所述背光模组108在对应所述第一部分102a的部分设置有过孔，如图5D所示。\n\n[0119]现有制程中一般会在一块大板上形成多个所述第一基板102，但在所述发光器件1012为微型二极管时，在所述大板上采用巨量转移技术形成所述发光器件1012会存在一定的难度。因此，可先在所述大板对应所述第一基板102的区域内形成所述第一驱动电路1021和所述第二驱动电路1023，然后再按设计规格在所述大板上切割出所需的所述第一基板102；之后采用巨量转移技术在所述第一基板102的所述第一部分102a处形成所述发光器件1012；再采用沉积工艺形成所述电连接线1022；最后，将按设计规格切割得到的所述第二基板104通过芯片级的对组成盒技术与所述第一基板102对组成盒，以降低制程难度，保证产品良率。\n\n[0120]请参阅图6，其为本申请的实施例提供的显示装置的结构示意图，本申请还提供一种显示装置，包括所述的显示面板或如所述的制备方法制得的显示面板；以及传感器601，所述传感器601正对所述第一显示区100a。\n\n[0121]所述传感器601包括指纹识别传感器、摄像头、结构光传感器、飞行时间传感器、距离传感器、光线传感器等。\n\n[0122]在任意时刻，所述传感器601可以通过所述透光区1011采集信号，以实现屏下指纹识别、屏下摄像头、屏下面部识别、屏下距离感知等各种屏下传感方案；而所述发光器件1012可保证所述第一显示区100a的正常显示，使得所述显示面板实现了屏下传感技术与光学显示在空间上的重合，实现了显示装置的全面屏设计。此外，所述第一显示区100a中的部分所述第一像素单元101或多个所述第一显示区100a可以兼做补光灯或指示灯等功能。\n\n[0123]进一步地，所述显示装置还包括触控面板，所述触控面板以内置式或外挂式的方式与所述显示面板结合，以使所述显示装置具有触控功能。\n\n[0124]本申请实施例提供的显示面板及其制备方法、显示装置，所述显示面板包括第一显示区100a，所述显示面板包括：多个第一像素单元101，多个所述第一像素单元101位于所述第一显示区100a内，每个所述第一像素单元101包括透光区1011和与所述透光区1011相邻设置的发光器件1012；第一基板102，所述第一基板102包括位于所述第一显示区100a内的第一部分102a，所述第一部分102a包括第一驱动电路1021以及位于所述第一驱动电路1021之上的电连接线1022；其中，所述发光器件1012安装于所述第一部分102a，所述发光器件1012包括背离所述第一驱动电路1021的电极1022a，所述电极1022a通过所述电连接线1022与所述第一驱动电路1021电性连接，以使所述显示面板实现屏下传感技术与光学显示在空间上的重合，降低所述显示面板的厚度。采用所述的显示面板制得的显示装置，亦可实现屏下传感技术与光学显示在空间上的重合，降低所述显示装置的厚度。\n\n[0125]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0126]以上对本申请实施例所提供的显示面板及其制备方法、显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种显示面板及其制备方法、显示装置。\n\n背景技术\n\n[0002]高屏占比显示装置因具有更窄的屏幕边框、更大的显示面积，可以为消费者带来更好的体验，成为显示领域的研究重点。但现有的全面屏显示装置由于屏下传感技术与光学显示无法在空间上重合，使得显示装置在设置传感器的区域仍不能实现显示；此外，为实现屏下传感技术，显示装置的厚度会受到一定影响，不利于用户的体验。因此，如何实现显示装置真正意义上的全屏显示，并减小显示装置的厚度成为研究的热点问题。\n\n发明内容\n\n[0003]本申请实施例提供一种显示面板及其制备方法、显示装置，可以解决屏下传感技术与光学显示无法在空间上重合，显示装置较厚的问题。\n\n[0004]本申请实施例提供一种显示面板，包括第一显示区，所述显示面板包括：\n\n[0005]多个第一像素单元，多个所述第一像素单元位于所述第一显示区内，每个所述第一像素单元包括透光区和与所述透光区相邻设置的发光器件；\n\n[0006]第一基板，所述第一基板包括位于所述第一显示区内的第一部分，所述第一部分包括第一驱动电路以及位于所述第一驱动电路之上的电连接线；\n\n[0007]其中，所述发光器件安装于所述第一部分，所述发光器件包括背离所述第一驱动电路的电极，所述电极通过所述电连接线与所述第一驱动电路电性连接。\n\n[0008]在一些实施例中，所述发光器件为自发光显示器件。\n\n[0009]在一些实施例中，所述发光器件包括次毫米发光二极管或微型发光二极管中的至少一种。\n\n[0010]在一些实施例中，所述发光器件还包括安装于所述第一基板的主体，所述电极自所述主体延伸而出，所述电连接线沿所述主体的表面延伸。\n\n[0011]在一些实施例中，所述电极包括自所述主体延伸而出的第一电极和第二电极；所述电连接线包括第一线和第二线，所述第一线电性连接所述第一电极和所述第一驱动电路，所述第一线沿所述主体的表面延伸，所述第二线电性连接所述第二电极和所述第一驱动电路，所述第二线沿所述主体的表面延伸。\n\n[0012]在一些实施例中，所述电连接线的制备材料包括Ti、Al、Mo、ITO中的至少一种。\n\n[0013]在一些实施例中，所述电连接线的截面尺寸为大于或等于100纳米且小于或等于1000纳米。\n\n[0014]在一些实施例中，所述显示面板还包括与所述第一显示区相邻设置的第二显示区，所述显示面板还包括位于所述第二显示区内的多个第二像素单元，多个所述第二像素单元的发光方式与多个所述第一像素单元的发光方式不同。\n\n[0015]在一些实施例中，每一所述第二像素单元为液晶显示像素单元。\n\n[0016]在一些实施例中，所述第一基板还包括位于所述第二显示区内的第二部分；所述第二部分包括第二驱动电路，所述第二驱动电路用于驱动多个所述第二像素单元。\n\n[0017]在一些实施例中，所述电连接线的材料与所述第二驱动电路中的导电层同层设置且材料相同。\n\n[0018]在一些实施例中，所述导电层包括像素电极，所述电连接线与所述像素电极同层设置且材料相同。\n\n[0019]在一些实施例中，所述显示面板还包括与所述第一基板相对设置的第二基板，所述第二基板的对应所述第二部分的部分包括彩膜单元。\n\n[0020]在一些实施例中，所述显示面板还包括：\n\n[0021]第一偏光片，位于所述第一基板远离所述第二基板的一侧，所述第一偏光片在对应所述第一部分的部分设置有过孔；\n\n[0022]第二偏光片，位于所述第二基板远离所述第一基板的一侧。\n\n[0023]在一些实施例中，所述显示面板还包括：\n\n[0024]背光模组，位于所述第一偏光片远离所述第一基板的一侧，所述背光模组的对应所述第一部分的部分设置有过孔。\n\n[0025]在一些实施例中，在俯视视角下，所述发光器件的面积小于或等于所述透光区的面积。\n\n[0026]本申请还提供一种显示面板的制备方法，包括以下步骤：\n\n[0027]S10：形成第一基板，所述第一基板包括第一部分和邻近所述第一部分的第二部分，所述第一部分包括第一驱动电路，所述第二部分包括第二驱动电路；\n\n[0028]S20：在所述第一部分上形成发光器件；其中，所述发光器件包括背离所述第一驱动电路的电极；\n\n[0029]S30：利用沉积工艺形成电连接线，所述电连接线电性连接所述电极与所述第一驱动电路；\n\n[0030]其中，所述第一基板的第一部分对应所述显示面板的第一显示区，所述第一基板的第二部分对应所述显示面板的邻近所述第一显示区的第二显示区，所述显示面板包括位于所述第一显示区内的多个第一像素单元和位于所述第二显示区内的多个第二像素单元，多个所述第一像素单元和多个所述第二像素单元的发光方式不同，每一所述第一像素单元包括透光区和与所述透光区相邻设置的所述发光器件，多个所述第二像素单元被所述第二驱动电路驱动。\n\n[0031]在一些实施例中，所述发光器件包括次毫米发光二极管或微型发光二极管中的至少一种。\n\n[0032]本申请还提供一种显示装置，包括所述的显示面板或如所述的制备方法制得的显示面板；以及传感器，所述传感器正对所述第一显示区。\n\n[0033]本申请实施例提供的显示面板及其制备方法、显示装置，所述显示面板包括第一显示区，所述显示面板包括：多个第一像素单元，多个所述第一像素单元位于所述第一显示区内，每个所述第一像素单元包括透光区和与所述透光区相邻设置的发光器件；第一基板，所述第一基板包括位于所述第一显示区内的第一部分，所述第一部分包括第一驱动电路以及位于所述第一驱动电路之上的电连接线；其中，所述发光器件安装于所述第一部分，所述发光器件包括背离所述第一驱动电路的电极，所述电极通过所述电连接线与所述第一驱动电路电性连接，以使所述显示面板实现屏下传感技术与光学显示在空间上的重合，降低所述显示面板的厚度。采用所述的显示面板制得的显示装置，亦可实现屏下传感技术与光学显示在空间上的重合，降低所述显示装置的厚度。\n\n附图说明\n\n[0034]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0035]图1A～图1C为本申请的实施例提供的显示面板的结构示意图；\n\n[0036]图1D～图1E为本申请的实施例提供的第一基板的第一部分的结构示意图；\n\n[0037]图2A～图2B为本申请的实施例提供的第一像素单元的俯视图；\n\n[0038]图3A～图3F为本申请的实施例提供的显示面板的俯视图；\n\n[0039]图4为本申请的实施例提供的显示面板的制备流程图；\n\n[0040]图5A～图5D为本申请的实施例提供的显示面板的制备过程示意图；\n\n[0041]图6为本申请的实施例提供的显示装置的结构示意图。\n\n[0042]附图标记：\n\n[0043]100a-第一显示区；100b-第二显示区；102a-第一部分；102b-第二部分；\n\n[0044]101a-第一子像素；1012a-电极；1012b-第一电极；1012c-第二电极；\n\n[0045]1013a-第一色转换单元；1013b-第二色转换单元；1041a-子彩膜单元；\n\n[0046]1022a-第一线；1022b-第二线；1012d-主体；1012e-发光器件；\n\n[0047]101-第一像素单元；1011-透光区、1012-发光器件；1013-色转换膜；\n\n[0048]102-第一基板；1021-第一驱动电路；1022-电连接线；1023-第二驱动电路；\n\n[0049]103-第二像素单元；104-第二基板；1041-彩膜单元；1051-第一偏光片；1052-第二偏光片；106-液晶分子；107-框胶；108-背光模组；601-传感器。\n\n具体实施方式\n\n[0050]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0051]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0052]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0053]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0054]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0055]具体的，请参阅图1A～图1C，其为本申请的实施例提供的显示面板的结构示意图；如图1D～图1E所示，其为本申请的实施例提供的第一基板的第一部分的结构示意图；如图2A～图2B所示，其为本申请的实施例提供的第一像素单元的俯视图；如图3A～图3F所示，其为本申请的实施例提供的显示面板的俯视图；所述显示面板，包括第一显示区100a，所述显示面板包括：\n\n[0056]多个第一像素单元101，多个所述第一像素单元101位于所述第一显示区100a内，每个所述第一像素单元101包括透光区1011和与所述透光区1011相邻设置的发光器件1012；\n\n[0057]第一基板102，所述第一基板102包括位于所述第一显示区100a内的第一部分102a，所述第一部分102a包括第一驱动电路1021以及位于所述第一驱动电路1021之上的电连接线1022；\n\n[0058]其中，所述发光器件1012安装于所述第一部分102a，所述发光器件1012包括背离所述第一驱动电路1021的电极1012a，所述电极1012a通过所述电连接线1022与所述第一驱动电路1021电性连接。\n\n[0059]由于每个所述第一像素单元101包括所述透光区1011和所述发光器件1012，因此，所述透光区1011使得所述第一显示区100a具备一定的透过率，所述透光区1011可以为实现屏下传感技术提供信号传输的通道，而所述发光器件1012可以保证所述第一像素单元101的正常显示，使得所述显示面板实现了屏下传感技术与光学显示在空间上的重合，便于所述显示面板实现全面屏设计。\n\n[0060]为使所述显示面板在所述第一显示区100a具有透明显示的功能，在俯视视角下，所述发光器件1012的面积小于或等于所述透光区1011的面积，以使所述第一显示区100a具备一定的光透过率，如图2A～图2B所示。\n\n[0061]具体地，所述第一像素单元101包括多个第一子像素101a，每个所述第一子像素101a包括所述透光区1011和所述发光器件1012，在每个所述第一子像素101a内，所述透光区1011的面积占所述第一子像素101a的面积的50％～99％。\n\n[0062]进一步地，每个所述发光器件1012的尺寸为大于或等于1微米且小于或等于500微米；每个所述第一子像素101a的尺寸为大于或等于10微米且小于或等于1000微米；其中，所述发光器件1012的尺寸指在俯视视角下所述发光器件1012的长或宽；与之相似地，所述第一子像素101a的尺寸指在俯视视角下所述第一子像素101a的长或宽。\n\n[0063]请继续参阅图1A～图1C和图2A～图2B，所述发光器件1012为自发光显示器件；具体地，所述发光器件1012包括次毫米发光二极管或微型发光二极管中的至少一种；进一步地，所述发光器件1012为微型发光二极管，以使所述第一显示区100a在具有较小的发光面积时，仍能保证所述第一显示区100a的显示质量不受影响。所述发光器件1012以内置式形式设置于所述第一基板102的所述第一部分102a，可以避免采用外挂式形式设置所述发光器件1012时，所述显示面板在所述第一显示区100a出现画面悬浮的问题。\n\n[0064]请继续参阅图1A～图1C和图1D～图1E，所述发光器件1012还包括安装于所述第一基板102的主体1012d，所述电极1012a自所述主体1012d延伸而出，所述电连接线1022沿所述主体1012d的表面延伸，所述电连接线1022的截面尺寸为大于或等于100纳米且小于或等于1000纳米，以降低所述显示面板的厚度。\n\n[0065]进一步地，所述电极1012a包括自所述主体1012d延伸而出的第一电极1012b和第二电极1012c；所述电连接线1022包括第一线1022a和第二线1022b，所述第一线1022a电性连接所述第一电极1012b和所述第一驱动电路1021，所述第一线1022a沿所述主体1012d的表面延伸；所述第二线1022b电性连接所述第二电极1012c和所述第一驱动电路1021，所述第二线1022b沿所述主体1012d的表面延伸。\n\n[0066]所述电连接线1022的制备材料包括Ti(钛)、Al(铝)、Mo(钼)、ITO(氧化铟锡)中的至少一种；进一步地，为避免所述电连接线1022对所述第一显示区100a的透光率造成影响，所述电连接线1022的制备材料为透明金属材料；其中，所述透明金属材料包括氧化铟锡。更进一步地，所述电极1012a的制备材料与所述电连接线1022的制备材料相同；具体地，所述电极1012a的制备材料为透明金属材料；所述透明金属材料包括氧化铟锡，以保证所述第一显示区100a具有较高的透光率。\n\n[0067]请继续参阅图1A～图1C，所述显示面板还包括与所述第一显示区100a相邻设置的第二显示区100b，所述显示面板还包括位于所述第二显示区100b内的多个第二像素单元103，多个所述第二像素单元103的发光方式与多个所述第一像素单元101的发光方式不同。\n\n[0068]具体地，每一所述第二像素单元103为液晶显示像素单元。\n\n[0069]所述第一基板102还包括位于所述第二显示区100b内的第二部分102b；所述第二部分102b包括第二驱动电路1023，所述第二驱动电路1023用于驱动多个所述第二像素单元103。\n\n[0070]为简化制程，所述电连接线1022的材料与所述第二驱动电路1023中的导电层同层设置且材料相同；进一步地，所述导电层包括像素电极，所述电连接线1022与所述像素电极同层设置且材料相同。\n\n[0071]所述显示面板还包括与所述第一基板102相对设置的第二基板104，所述第二基板104的对应所述第二部分102b的部分包括彩膜单元1041，如图1A所示。\n\n[0072]在图1A所示的显示面板中，所述发光器件1012包括红色发光器件、绿色发光器件、蓝色发光器件等以实现所述显示面板的全彩显示。\n\n[0073]若多个所述发光器件1012发出的光为单色光，则所述显示面板可利用色转换膜实现全彩显示。\n\n[0074]具体地，请继续参阅图1B和图1C，所述显示面板还包括位于所述发光器件1012远离所述第一基板102一侧的色转换膜1013，所述色转换膜1013包括第一色转换单元1013a和第二色转换单元1013b；其中，所述第一色转换单元1013a将所述发光器件1012发出的第一波长的光转换为第二波长的光，所述第二色转换单元1013b用于透射所述发光器件1012发出的光。即若所述发光器件1012为蓝色发光器件，则所述第一色转换单元1013a吸收所述发光器件1012发出的蓝光发出红光、绿光、橙光或黄光等颜色的光，而所述第二色转换单元1013b透射所述发光器件1012发出的蓝光。\n\n[0075]进一步地，多个所述第一色转换单元1013a吸收所述发光器件1012发出的光可以不同，即多个所述第一色转换单元1013a还包括第一子色转换单元和第二子色转换单元，所述第一子色转换单元吸收所述发光器件1012发出的光与所述第二子色转换单元吸收所述发光器件1012发出的光的颜色不同。\n\n[0076]为节约制程，所述色转换膜1013可位于所述第二基板104内；更进一步地，所述色转换膜1013的所述第一色转换单元1013a和所述第二色转换单元1013b可以与所述第二基板104上的所述彩膜单元1041同层制备。即所述第二基板104的对应所述第一部分102a的部分包括所述第一色转换单元1013a和所述第二色转换单元1013b，如图1C所示。\n\n[0077]为避免所述色转换膜1013对所述透光区1011造成遮挡，影响透光率，所述色转换膜1013中的所述第一色转换单元1013a和所述第二色转换单元1013b的面积等于所述发光器件1012的面积，且在俯视视角下，所述第一色转换单元1013a和所述第二色转换单元1013b分别覆盖与之对应的所述发光器件1012，如图2B所示。\n\n[0078]请继续参阅图1A～图1C，为避免所述第一显示区100a和所述第二显示区100b在交界处出现显示中断或显示不连续等问题，在所述第一显示区100a和所述第二显示区100b的交界处，所述第一像素单元101与所述第二像素单元103相邻设置。\n\n[0079]具体地，所述第二像素单元103包括对应的所述彩膜单元1041，在俯视视角下，所述第一像素单元101与所述彩膜单元1041在所述第一显示区100a和所述第二显示区100b交界处相接。\n\n[0080]进一步地，在图1A所示的显示面板中，所述彩膜单元1041中的靠近所述第一显示区100a和所述第二显示区100b交界处的子彩膜单元1041a与所述发光器件1012中靠近所述第一显示区100a和所述第二显示区100b交界处的发光器件1012e的颜色相同，即若所述子彩膜单元1041a为红色彩膜单元，则所述发光器件1012e也为红色发光器件。与之相似地，在图1B～图1C所示的显示面板中，所述彩膜单元1041中的靠近所述第一显示区100a和所述第二显示区100b交界处的子彩膜单元1041a与所述色转换膜1013中靠近所述第一显示区100a和所述第二显示区100b交界处的所述第一色转换单元1013a或第二色转换单元1013b a的颜色相同。\n\n[0081]请继续参阅图1A～图1C，所述显示面板还包括：\n\n[0082]第一偏光片1051，位于所述第一基板102远离所述第二基板104一侧，所述第一偏光片1051的对应所述第一部分102a的部分设置有过孔；\n\n[0083]第二偏光片1052，位于所述第二基板104远离所述第一基板102的一侧。\n\n[0084]所述显示面板还包括位于所述第一基板102与所述第二基板104之间的液晶分子106和框胶107。\n\n[0085]由于所述第一偏光片1051在对应所述第一部分102a的部分设置有过孔，所以，所述液晶分子1061在所述第一显示区100a虽改变了光的偏振状态，但因只受到所述第二偏光片1052作用而无法实现调光功能，因此，所述液晶分子1061不会对所述第一显示区100a的显示造成影响。\n\n[0086]可以理解的，所述第二偏光片1052在对应所述第一部分102a的部分也可设置所述过孔，如图1C所示。\n\n[0087]请继续参阅图1A～图1C，所述显示面板还包括：\n\n[0088]背光模组108，位于所述第一偏光片1051远离所述第一基板102的一侧，所述背光模组108的对应所述第一部分102a的部分设置有过孔。\n\n[0089]请继续参阅图1A～图1C，为保证所述透光区1011的透光率，所述第一基板102的制备材料为高透光率材料，包括玻璃、无色聚酰亚胺材料、亚克力材料等。\n\n[0090]所述第一基板102还包括衬底、缓冲层等未示出部分；所述第一驱动电路1021还包括第一薄膜晶体管、第一控制线路等未示出部分。所述第二驱动电路1023还包括第二薄膜晶体管、第二控制线路等未示出部分。\n\n[0091]所述第一驱动电路1021驱动所述发光器件1012的方式包括有源选址驱动方式和无源选址驱动方式；具体地，所述有源选址方式包括采用低温多晶硅技术、非晶硅技术、氧化铟镓锌技术的驱动方式；在所述第一显示区100a的面积较小的情况下(如小于10*10mm)，所述第一驱动电路1021采用无源选址驱动方式驱动所述发光器件1012，以使所述显示面板获得较高的光透过率。\n\n[0092]由于所述第一显示区100a与所述第二显示区100b采用不同的发光方式进行显示，所以所述第一薄膜晶体管和所述第二薄膜晶体管在尺寸上可以存在差别，所述第一薄膜晶体管和所述第二薄膜晶体管的尺寸可分别根据所述第一显示区100a和所述第二显示区100b的设计需求进行光电匹配得到，在此对其不再进行赘述。\n\n[0093]所述第一显示区100a和所述第二显示区100b之间的显示亮度差异可以根据后续的软件算法进行亮度匹配；所述第一显示区100a和所述第二显示区100b之间的显示精度差异可以通过分辨率的匹配设计进行优化，在此对其不再进行赘述。\n\n[0094]在图1A～图1C所示的显示面板中，均以多个所述第二像素单元103的发光方式与多个所述第一像素单元101的发光方式不同为例进行说明。可以理解的，每一所述第二像素单元103也可为与所述第一像素单元101采用相同的发光方式，即所述第二像素单元103包括多个第二发光器件，所述第二发光器件包括有机发光二极管、次毫米发光二极管或微型发光二极管中的至少一种。\n\n[0095]进一步地，在所述第一显示区100a和所述第二显示区100b的交界处，所述第一像素单元101与所述第二像素单元103相邻设置。\n\n[0096]具体地，在俯视视角下，所述第一像素单元101与所述第二像素单元103在所述第一显示区100a和所述第二显示区100b交界处相接。\n\n[0097]进一步地，所述第二发光器件中的靠近所述第一显示区100a和所述第二显示区100b交界处的第二子发光器件与所述发光器件1012中靠近所述第一显示区100a和所述第二显示区100b交界处的发光器件1012e的颜色相同，即若所述第二子发光器件为绿色发光器件，则所述发光器件1012e也为绿色发光器件。\n\n[0098]请继续参阅图3A～图3F，在俯视视角下，所述第一显示区100a可以位于所述显示面板上部，也可位于所述显示面板的下部，所述第一显示区100a的位置可根据实际的设计需求进行设计，在此不再对其进行赘述。\n\n[0099]在俯视视角下，所述第一显示区100a的形状包括圆形、多边形中的一种或组合，所述第一显示区100a的具体形状也可根据实际的设计需求进行设计，在此不再对其进行赘述。\n\n[0100]此外，所述显示面板还可包括多个所述第一显示区100a，多个所述第一显示区100a与所述第二显示区100b相邻设置，多个所述第一显示区100a的具体分布方式根据实际的需求进行设计，在此不再对其进行赘述。\n\n[0101]图3A～图3F所示的显示面板的形状、所述第一显示区100a、所述第二显示区100b的形状、位置等均为示例性说明，并不用于限制本申请，本领域的相关技术人员可根据实际需求进行设计。\n\n[0102]请参阅图4，其为本申请的实施例提供的显示面板的制备流程图；如图5A～图5D所示，其为本申请的实施例提供的显示面板的制备过程示意图。\n\n[0103]本申请还提供一种显示面板的制备方法，包括以下步骤：\n\n[0104]S10：形成第一基板102，所述第一基板102包括第一部分102a和邻近所述第一部分102a的第二部分102b，所述第一部分102a包括第一驱动电路1021，所述第二部分102b包括第二驱动电路1023，如图5A所示；\n\n[0105]S20：在所述第一部分102a上形成发光器件1012；其中，所述发光器件1012包括背离所述第一驱动电路1021的电极1012a，如图5B所示；\n\n[0106]S30：利用沉积工艺形成电连接线1022，所述电连接线1022电性连接所述电极1012a与所述第一驱动电路1021，如图5C所示；\n\n[0107]其中，所述第一基板102的第一部分102a对应所述显示面板的第一显示区100a，所述第一基板102的第二部分100b对应所述显示面板的邻近所述第一显示区100a的第二显示区100b，所述显示面板包括位于所述第一显示区100a内的多个第一像素单元和位于所述第二显示区100b内的多个第二像素单元103，多个所述第一像素单元和多个所述第二像素单元103的发光方式不同，每一所述第一像素单元包括透光区1011和与所述透光区1011相邻设置的所述发光器件1012，多个所述第二像素单元103被所述第二驱动电路1023驱动。\n\n[0108]其中，所述发光器件1012包括次毫米发光二极管或微型发光二极管中的至少一种。\n\n[0109]进一步地，所述发光器件1012为微型发光二极管；在所述步骤S20中，通过电磁力，静电力，范德华力等巨量转移方式将生长基板或中间基板上的所述发光器件1012转移至所述第一驱动电路1021上。所述发光器件1012的厚度为大于或等于1微米且小于或等于5微米；进一步地，所述发光器件1012的厚度等于3微米。\n\n[0110]所述第一显示区100a的面积小于或等于30*30mm；进一步地，所述第一显示区100a的面积小于或等于10*10mm，以便在所述第一部分102a采用巨量转移的方式制备所述发光器件1012时，在所述第一部分102a具有较好的转印良率，并实现成本的控制。此外，所述第一部分102a所需制备的所述发光器件1012的数目也会对所述发光器件1012的良率及产品成本造成影响，在所述第一部分102a所需制备的所述发光器件1012的数目较少，所述第一显示区100a的面积较小的情况下，在所述第一部分102采用巨量转移的方式制备所述发光器件1012时的良率也较高，对成本的控制也较有利。所述第一部分102a所需制备的所述发光器件1012的数目由设计需求确定，本领域相关技术人员可根据实际需求进行设置，在此对其不进行赘述。\n\n[0111]所述电连接线1022通过沉积工艺形成，所述沉积工艺包括电镀、化学镀、印镀、蒸渡、溅镀等方式。具体地，在步骤S30中，在所述发光器件1012远离所述第一基板102的一侧形成整面的电连接线层，然后采用黄光制程制得所述电连接线1022。或在步骤S30中，提供一金属掩膜板，利用所述金属掩膜板在所述发光器件1012和所述第一驱动电路1021表面形成所述电连接线1022。\n\n[0112]此外，所述电连接线1022还可采用光阻剥离的方式形成；具体地，在所述步骤S30中，在所述发光器件1012远离所述第一基板102的一侧形成整面的光阻层，然后对所述光阻层进行图形化，再利用沉积工艺制得所述电连接线1022，最后去除剩余的所述光阻层。\n\n[0113]所述电连接线1022的材料可以与第二驱动电路1023中的导电层同层设置且材料相同；所述电连接线1022的制备材料包括Ti(钛)、Al(铝)、Mo(钼)、ITO(氧化铟锡)中的至少一种。\n\n[0114]由于所述电连接线1022采用沉积工艺形成，所述电连接线1022的厚度可以保持在纳米级厚度；具体地，所述电连接线1022的截面尺寸为大于或等于100纳米且小于或等于1000纳米。若所述第二像素单元1023为液晶显示单元时，所述第一基板102与所述第二基板104对组成盒后的盒间距为大于或等于1微米且小于或等于5微米；进一步地，所述第一基板102与所述第二基板104对组成盒后的盒间距等于3微米，以降低对所述显示面板透光率的影响。\n\n[0115]若所述第二像素单元1023为液晶显示单元，则所述制备方法还包括以下步骤：\n\n[0116]S40：提供第二基板104，将所述第二基板104与所述第一基板102对组成盒，并在所述第一基板102和所述第二基板104之间注入液晶分子106；其中，所述第二基板104的对应所述第二部分102b的部分包括彩膜单元1041；所述液晶分子106位于框胶107界定的区域内；\n\n[0117]S50：在所述第一基板102远离所述第二基板104的一侧制备第一偏光片1051，在所述第二基板104远离所述第一基板102的一侧形成第二偏光片1052；其中，所述第一偏光片1051在对应所述第一部分102a的部分设置有过孔；\n\n[0118]S60：在所述第一偏光片1051远离所述第二基板104的一侧制备背光模组108；其中，所述背光模组108在对应所述第一部分102a的部分设置有过孔，如图5D所示。\n\n[0119]现有制程中一般会在一块大板上形成多个所述第一基板102，但在所述发光器件1012为微型二极管时，在所述大板上采用巨量转移技术形成所述发光器件1012会存在一定的难度。因此，可先在所述大板对应所述第一基板102的区域内形成所述第一驱动电路1021和所述第二驱动电路1023，然后再按设计规格在所述大板上切割出所需的所述第一基板102；之后采用巨量转移技术在所述第一基板102的所述第一部分102a处形成所述发光器件1012；再采用沉积工艺形成所述电连接线1022；最后，将按设计规格切割得到的所述第二基板104通过芯片级的对组成盒技术与所述第一基板102对组成盒，以降低制程难度，保证产品良率。\n\n[0120]请参阅图6，其为本申请的实施例提供的显示装置的结构示意图，本申请还提供一种显示装置，包括所述的显示面板或如所述的制备方法制得的显示面板；以及传感器601，所述传感器601正对所述第一显示区100a。\n\n[0121]所述传感器601包括指纹识别传感器、摄像头、结构光传感器、飞行时间传感器、距离传感器、光线传感器等。\n\n[0122]在任意时刻，所述传感器601可以通过所述透光区1011采集信号，以实现屏下指纹识别、屏下摄像头、屏下面部识别、屏下距离感知等各种屏下传感方案；而所述发光器件1012可保证所述第一显示区100a的正常显示，使得所述显示面板实现了屏下传感技术与光学显示在空间上的重合，实现了显示装置的全面屏设计。此外，所述第一显示区100a中的部分所述第一像素单元101或多个所述第一显示区100a可以兼做补光灯或指示灯等功能。\n\n[0123]进一步地，所述显示装置还包括触控面板，所述触控面板以内置式或外挂式的方式与所述显示面板结合，以使所述显示装置具有触控功能。\n\n[0124]本申请实施例提供的显示面板及其制备方法、显示装置，所述显示面板包括第一显示区100a，所述显示面板包括：多个第一像素单元101，多个所述第一像素单元101位于所述第一显示区100a内，每个所述第一像素单元101包括透光区1011和与所述透光区1011相邻设置的发光器件1012；第一基板102，所述第一基板102包括位于所述第一显示区100a内的第一部分102a，所述第一部分102a包括第一驱动电路1021以及位于所述第一驱动电路1021之上的电连接线1022；其中，所述发光器件1012安装于所述第一部分102a，所述发光器件1012包括背离所述第一驱动电路1021的电极1022a，所述电极1022a通过所述电连接线1022与所述第一驱动电路1021电性连接，以使所述显示面板实现屏下传感技术与光学显示在空间上的重合，降低所述显示面板的厚度。采用所述的显示面板制得的显示装置，亦可实现屏下传感技术与光学显示在空间上的重合，降低所述显示装置的厚度。\n\n[0125]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0126]以上对本申请实施例所提供的显示面板及其制备方法、显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10820, 23874, '技术领域\n\n[0001]本申请涉及一种显示技术，特别涉及一种显示模组。\n\n背景技术\n\n[0002]如目前3D曲面显示屏被越来越多的旗舰智能手机所采用，相较于传统的2D平面设计方案，左右边框进一步减小，然而当采用3D曲面设计时，位于两侧的曲面区域的触控灵敏度相较于中间平面区劣化的状况。\n\n[0003]由于窄边框的需求，对应触控设计采用1T1R的设计方案，驱动电极通道采取单边引线设计方案。感测电极采取单边引线时，在远离驱动通道的远端处对应的触控电极，由于RC Delay较大，在高频率触控的时候，往往远端的触控电极电容电量无法充满至额定的大小，因此驱动或/和感测远端出现触控不灵敏的状况。\n\n发明内容\n\n[0004]本申请实施例提供一种显示模组，以解决现有的显示面板的触控电极远端出现触控不灵敏的技术问题。\n\n[0005]本申请实施例提供一种显示模组，其包括：\n\n[0006]显示面板；\n\n[0007]触控控制模块，所述触控控制模块设置在所述显示面板上，以及\n\n[0008]触控结构层，所述触控结构层设置在所述显示面板上，所述触控结构层电性连接于所述触控控制模块；\n\n[0009]所述触控结构层包括触控层，所述触控层包括多条第一触控电极、多条第二触控电极和多个第三触控电极；\n\n[0010]多条所述第一触控电极沿着第一方向排列设置；多条所述第二触控电极沿着第二方向排列设置，且与所述第一触控电极交叉设置；所述第二触控电极与所述第一触控电极之间形成互电容结构；\n\n[0011]多个所述第三触控电极至少设置在所述触控层远离所述触控控制模块的一端；多个所述第三触控电极一一对应地并排设置在每条所述第一触控电极的末端，且每个所述第三触控电极与对应的所述第一触控电极形成互电容结构。\n\n[0012]在本申请实施例所述的显示模组中，与所述第三触控电极形成所述互电容结构的所述第一触控电极的末端部分为第一凹凸结构，所述第三触控电极为第二凹凸结构，所述第一凹凸结构与所述第二凹凸结构相互咬合且绝缘设置。\n\n[0013]在本申请实施例所述的显示模组中，所述第一凹凸结构的凸部和所述第二凹凸结构的凸部的俯视形状均为三角形状或半圆状或矩形状。\n\n[0014]在本申请实施例所述的显示模组中，所述触控结构层包括过桥层，所述过桥层与所述触控层异层设置；\n\n[0015]在每条所述第二触控电极中，相邻的两个所述第二触控电极通过所述过桥层电性连接。\n\n[0016]在本申请实施例所述的显示模组中，所述触控结构层还包括多条第一引线、多条第二引线和多条第三引线，每条所述第一触控电极的首端一一对应地通过所述第一引线连接于所述触控控制模块；每条所述第二触控电极一一对应地通过所述第二引线连接于所述触控控制模块；每条所述第三触控电极一一对应地通过所述第三引线连接于所述触控控制模块。\n\n[0017]在本申请实施例所述的显示模组中，所述第一引线、所述第二引线和所述第三引线均设置在所述触控层或过桥层。\n\n[0018]在本申请实施例所述的显示模组中，所述第一引线设置在所述触控层和所述过桥层中的一层，所述第二引线和所述第三引线均设置在所述触控层和所述过桥层中的另一层。\n\n[0019]在本申请实施例所述的显示模组中，所述触控结构层还包括绝缘层和保护层，所述过桥层设置在所述显示面板上，所述绝缘层设置在所述过桥层上，所述触控层设置在所述绝缘层上，所述保护层设置在所述触控层上。\n\n[0020]在本申请实施例所述的显示模组中，所述显示面板为有机发光二极管显示面板或液晶显示面板或微发光二极管显示面板。\n\n[0021]在本申请实施例所述的显示模组中，所述第二触控电极和所述第三触控电极均为感测电极和驱动电极中的一种，所述第一触控电极为所述感测和所述驱动电极中的另一种。\n\n[0022]本申请的显示模组通过在每条第一触控电极和第二触控电极通道的共同的远端区域增设一根与第一触控电极互电容的第三触控电极，进而提高了显示模组远离触控控制模块的部分的边缘区域的触控灵敏度。\n\n附图说明\n\n[0023]为了更清楚地说明本申请实施例或现有技术中的技术方案，下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本申请的部分实施例，对于本领域普通技术人员而言，在不付出创造性劳动的前提下，还可以根据这些附图获取其他的附图。\n\n[0024]图1为本申请实施例的显示模组的结构示意图；\n\n[0025]图2为图1中A部分的放大图；\n\n[0026]图3为本申请实施例的显示模组的另一结构示意图。\n\n具体实施方式\n\n[0027]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0028]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0029]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0030]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0031]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0032]请参照图1和图3，图1为本申请实施例的显示模组的结构示意图；图3为本申请实施例的显示模组的另一结构示意图。\n\n[0033]本申请实施例提供一种显示模组100，其包括显示面板10、触控控制模块20和触控结构层30。\n\n[0034]显示面板10可以为有机发光二极管显示面板或液晶显示面板或微发光二极管显示面板。\n\n[0035]所述触控控制模块20设置在所述显示面板10上。具体的，触控控制模块20为控制芯片，其可以直接绑定在所述显示面板10的绑定区上。在一些实施例中，触控控制模块20也可以通过电路板绑定在所述显示面板10的绑定区上。\n\n[0036]所述触控结构层30设置在所述显示面板10上，所述触控结构层10电性连接于所述触控控制模块20。\n\n[0037]具体的，所述触控结构层30包括依次设置在显示面板10上的过桥层31、绝缘层32、触控层33和保护层34。也即，所述过桥层31设置在所述显示面板10上，所述绝缘层32设置在所述过桥层31上，所述触控层33设置在所述绝缘层32上，所述保护层34设置在所述触控层33上。在一些实施例中，过桥层31和触控层33的层级位置互换设置。\n\n[0038]其中，所述触控层33包括多条第一触控电极331、多条第二触控电极332和多个第三触控电极333。\n\n[0039]多条所述第一触控电极331沿着第一方向排列设置。多条所述第二触控电极332沿着第二方向排列设置，且与所述第一触控电极331交叉设置。所述第二触控电极332与所述第一触控电极331之间形成互电容结构。\n\n[0040]多个所述第三触控电极333至少设置在所述触控层33远离所述触控控制模块20的一端。多个所述第三触控电极333一一对应地并排设置在每条所述第一触控电极331的末端，且每个所述第三触控电极333与对应的所述第一触控电极331形成互电容结构。\n\n[0041]其中，在本实施例中，第一方向垂直于第二方向，但并不限于此。\n\n[0042]每条所述第一触控电极331的末端为每条第一触控电极331的自由端，也即，每条第一触控电极331的末端在触控信号传输上是距离触控控制模块20的最远端。\n\n[0043]本申请的显示模组100通过在每条第一触控电极331和第二触控电极332通道的共同的远端区域增设一根与第一触控电极331互电容的第三触控电极333，进而提高了显示模组100远离触控控制模块20的部分的边缘区域的触控灵敏度。\n\n[0044]在本实施例所述的显示模组100中，请参照图1和图2，与所述第三触控电极333形成所述互电容结构的所述第一触控电极331的末端部分为第一凹凸结构33a。所述第三触控电极333为第二凹凸结构。所述第一凹凸结构33a与所述第二凹凸结构333相互咬合且绝缘设置。二者的相互咬合设置，以提高触控灵敏度。\n\n[0045]可选的，第一凹凸结构33a的凸部和所述第二凹凸结构333的凸部的俯视形状均为三角形状或半圆状或矩形状或T字型或梯形，但并不限于此。也即，第一凹凸结构33a和第三触控电极333的形状为锯齿状或波浪形状或类锯齿状。\n\n[0046]在本实施例所述的显示模组100中，所述过桥层31与所述触控层33异层设置。在每条所述第二触控电极332中，相邻的两个所述第二触控电极332通过所述过桥层31电性连接。即相邻的两个第二触控电极332相互电性连接呈条。\n\n[0047]在本施例所述的显示模组100中，所述触控结构层33还包括多条第一引线334、多条第二引线335和多条第三引线336。每条所述第一触控电极331的首端一一对应地通过所述第一引线334连接于所述触控控制模块20。每条所述第二触控电极332一一对应地通过所述第二引线335连接于所述触控控制模块20；每条所述第三触控电极333一一对应地通过所述第三引线336连接于所述触控控制模块20。\n\n[0048]其中，第二引线335电性连接于所述第二触控电极332靠近所述触控控制模块20的一端。\n\n[0049]另外，在本实施例中，第一引线334的一部分设置在显示面板10的一侧连接显示面板10上区域的每条触控电极331；第一引线334的另一部分设置在显示面板10的另一侧连接显示面板10下区域的每条触控电极331。以缩短布线宽度，进而实现显示模组100的窄边框需求。\n\n[0050]其中显示面板10的上区域为远离所述触控控制模块20的区域；显示面板10的下区域为靠近所述触控控制模块20的区域。在触控信号的输送距离上，上区域中的触控电极的传输路途长于下区域中的触控电极的传输路径。\n\n[0051]在本实施例中，第三触控电极333及与所述第三触控电极333互电容的第一触控电极331设置在所述上区域。\n\n[0052]在本实施例中，上区域和下区域的数量均为一个，上区域位于所述下区域远离所述触控控制模块20的一端。但在一些实施例中，上区域和下区域的数量可以为至少两个，上区域和下区域交替设置，此时第一引线334和第三引线336异层设置。\n\n[0053]具体的，所述第一引线334、所述第二引线335和所述第三引线336均设置在所述触控层33或过桥层31。附图2仅示出各引线在过桥层31的结构，但并不限于此。\n\n[0054]比如，所述第一引线334设置在所述触控层33和所述过桥层31中的一层，所述第二引线335和所述第三引线336均设置在所述触控层33和所述过桥层31中的另一层。\n\n[0055]在本实施例所述的显示模组100中，所述第二触控电极332和所述第三触控电极333均为感测电极和驱动电极中的一种，所述第一触控电极331为所述感测和所述驱动电极中的另一种。\n\n[0056]也即，第二触控电极332和第三触控电极333为同种触控电极，第一触控电极331和第二触控电极332为不同种的触控电极。\n\n[0057]本申请的显示模组通过在每条第一触控电极和第二触控电极通道的共同的远端区域增设一根与第一触控电极互电容的第三触控电极，进而提高了显示模组远离触控控制模块的部分的边缘区域的触控灵敏度。\n\n[0058]以上对本申请实施例所提供的一种显示模组进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及一种显示技术，特别涉及一种显示模组。\n\n背景技术\n\n[0002]如目前3D曲面显示屏被越来越多的旗舰智能手机所采用，相较于传统的2D平面设计方案，左右边框进一步减小，然而当采用3D曲面设计时，位于两侧的曲面区域的触控灵敏度相较于中间平面区劣化的状况。\n\n[0003]由于窄边框的需求，对应触控设计采用1T1R的设计方案，驱动电极通道采取单边引线设计方案。感测电极采取单边引线时，在远离驱动通道的远端处对应的触控电极，由于RC Delay较大，在高频率触控的时候，往往远端的触控电极电容电量无法充满至额定的大小，因此驱动或/和感测远端出现触控不灵敏的状况。\n\n发明内容\n\n[0004]本申请实施例提供一种显示模组，以解决现有的显示面板的触控电极远端出现触控不灵敏的技术问题。\n\n[0005]本申请实施例提供一种显示模组，其包括：\n\n[0006]显示面板；\n\n[0007]触控控制模块，所述触控控制模块设置在所述显示面板上，以及\n\n[0008]触控结构层，所述触控结构层设置在所述显示面板上，所述触控结构层电性连接于所述触控控制模块；\n\n[0009]所述触控结构层包括触控层，所述触控层包括多条第一触控电极、多条第二触控电极和多个第三触控电极；\n\n[0010]多条所述第一触控电极沿着第一方向排列设置；多条所述第二触控电极沿着第二方向排列设置，且与所述第一触控电极交叉设置；所述第二触控电极与所述第一触控电极之间形成互电容结构；\n\n[0011]多个所述第三触控电极至少设置在所述触控层远离所述触控控制模块的一端；多个所述第三触控电极一一对应地并排设置在每条所述第一触控电极的末端，且每个所述第三触控电极与对应的所述第一触控电极形成互电容结构。\n\n[0012]在本申请实施例所述的显示模组中，与所述第三触控电极形成所述互电容结构的所述第一触控电极的末端部分为第一凹凸结构，所述第三触控电极为第二凹凸结构，所述第一凹凸结构与所述第二凹凸结构相互咬合且绝缘设置。\n\n[0013]在本申请实施例所述的显示模组中，所述第一凹凸结构的凸部和所述第二凹凸结构的凸部的俯视形状均为三角形状或半圆状或矩形状。\n\n[0014]在本申请实施例所述的显示模组中，所述触控结构层包括过桥层，所述过桥层与所述触控层异层设置；\n\n[0015]在每条所述第二触控电极中，相邻的两个所述第二触控电极通过所述过桥层电性连接。\n\n[0016]在本申请实施例所述的显示模组中，所述触控结构层还包括多条第一引线、多条第二引线和多条第三引线，每条所述第一触控电极的首端一一对应地通过所述第一引线连接于所述触控控制模块；每条所述第二触控电极一一对应地通过所述第二引线连接于所述触控控制模块；每条所述第三触控电极一一对应地通过所述第三引线连接于所述触控控制模块。\n\n[0017]在本申请实施例所述的显示模组中，所述第一引线、所述第二引线和所述第三引线均设置在所述触控层或过桥层。\n\n[0018]在本申请实施例所述的显示模组中，所述第一引线设置在所述触控层和所述过桥层中的一层，所述第二引线和所述第三引线均设置在所述触控层和所述过桥层中的另一层。\n\n[0019]在本申请实施例所述的显示模组中，所述触控结构层还包括绝缘层和保护层，所述过桥层设置在所述显示面板上，所述绝缘层设置在所述过桥层上，所述触控层设置在所述绝缘层上，所述保护层设置在所述触控层上。\n\n[0020]在本申请实施例所述的显示模组中，所述显示面板为有机发光二极管显示面板或液晶显示面板或微发光二极管显示面板。\n\n[0021]在本申请实施例所述的显示模组中，所述第二触控电极和所述第三触控电极均为感测电极和驱动电极中的一种，所述第一触控电极为所述感测和所述驱动电极中的另一种。\n\n[0022]本申请的显示模组通过在每条第一触控电极和第二触控电极通道的共同的远端区域增设一根与第一触控电极互电容的第三触控电极，进而提高了显示模组远离触控控制模块的部分的边缘区域的触控灵敏度。\n\n附图说明\n\n[0023]为了更清楚地说明本申请实施例或现有技术中的技术方案，下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本申请的部分实施例，对于本领域普通技术人员而言，在不付出创造性劳动的前提下，还可以根据这些附图获取其他的附图。\n\n[0024]图1为本申请实施例的显示模组的结构示意图；\n\n[0025]图2为图1中A部分的放大图；\n\n[0026]图3为本申请实施例的显示模组的另一结构示意图。\n\n具体实施方式\n\n[0027]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0028]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0029]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0030]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0031]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0032]请参照图1和图3，图1为本申请实施例的显示模组的结构示意图；图3为本申请实施例的显示模组的另一结构示意图。\n\n[0033]本申请实施例提供一种显示模组100，其包括显示面板10、触控控制模块20和触控结构层30。\n\n[0034]显示面板10可以为有机发光二极管显示面板或液晶显示面板或微发光二极管显示面板。\n\n[0035]所述触控控制模块20设置在所述显示面板10上。具体的，触控控制模块20为控制芯片，其可以直接绑定在所述显示面板10的绑定区上。在一些实施例中，触控控制模块20也可以通过电路板绑定在所述显示面板10的绑定区上。\n\n[0036]所述触控结构层30设置在所述显示面板10上，所述触控结构层10电性连接于所述触控控制模块20。\n\n[0037]具体的，所述触控结构层30包括依次设置在显示面板10上的过桥层31、绝缘层32、触控层33和保护层34。也即，所述过桥层31设置在所述显示面板10上，所述绝缘层32设置在所述过桥层31上，所述触控层33设置在所述绝缘层32上，所述保护层34设置在所述触控层33上。在一些实施例中，过桥层31和触控层33的层级位置互换设置。\n\n[0038]其中，所述触控层33包括多条第一触控电极331、多条第二触控电极332和多个第三触控电极333。\n\n[0039]多条所述第一触控电极331沿着第一方向排列设置。多条所述第二触控电极332沿着第二方向排列设置，且与所述第一触控电极331交叉设置。所述第二触控电极332与所述第一触控电极331之间形成互电容结构。\n\n[0040]多个所述第三触控电极333至少设置在所述触控层33远离所述触控控制模块20的一端。多个所述第三触控电极333一一对应地并排设置在每条所述第一触控电极331的末端，且每个所述第三触控电极333与对应的所述第一触控电极331形成互电容结构。\n\n[0041]其中，在本实施例中，第一方向垂直于第二方向，但并不限于此。\n\n[0042]每条所述第一触控电极331的末端为每条第一触控电极331的自由端，也即，每条第一触控电极331的末端在触控信号传输上是距离触控控制模块20的最远端。\n\n[0043]本申请的显示模组100通过在每条第一触控电极331和第二触控电极332通道的共同的远端区域增设一根与第一触控电极331互电容的第三触控电极333，进而提高了显示模组100远离触控控制模块20的部分的边缘区域的触控灵敏度。\n\n[0044]在本实施例所述的显示模组100中，请参照图1和图2，与所述第三触控电极333形成所述互电容结构的所述第一触控电极331的末端部分为第一凹凸结构33a。所述第三触控电极333为第二凹凸结构。所述第一凹凸结构33a与所述第二凹凸结构333相互咬合且绝缘设置。二者的相互咬合设置，以提高触控灵敏度。\n\n[0045]可选的，第一凹凸结构33a的凸部和所述第二凹凸结构333的凸部的俯视形状均为三角形状或半圆状或矩形状或T字型或梯形，但并不限于此。也即，第一凹凸结构33a和第三触控电极333的形状为锯齿状或波浪形状或类锯齿状。\n\n[0046]在本实施例所述的显示模组100中，所述过桥层31与所述触控层33异层设置。在每条所述第二触控电极332中，相邻的两个所述第二触控电极332通过所述过桥层31电性连接。即相邻的两个第二触控电极332相互电性连接呈条。\n\n[0047]在本施例所述的显示模组100中，所述触控结构层33还包括多条第一引线334、多条第二引线335和多条第三引线336。每条所述第一触控电极331的首端一一对应地通过所述第一引线334连接于所述触控控制模块20。每条所述第二触控电极332一一对应地通过所述第二引线335连接于所述触控控制模块20；每条所述第三触控电极333一一对应地通过所述第三引线336连接于所述触控控制模块20。\n\n[0048]其中，第二引线335电性连接于所述第二触控电极332靠近所述触控控制模块20的一端。\n\n[0049]另外，在本实施例中，第一引线334的一部分设置在显示面板10的一侧连接显示面板10上区域的每条触控电极331；第一引线334的另一部分设置在显示面板10的另一侧连接显示面板10下区域的每条触控电极331。以缩短布线宽度，进而实现显示模组100的窄边框需求。\n\n[0050]其中显示面板10的上区域为远离所述触控控制模块20的区域；显示面板10的下区域为靠近所述触控控制模块20的区域。在触控信号的输送距离上，上区域中的触控电极的传输路途长于下区域中的触控电极的传输路径。\n\n[0051]在本实施例中，第三触控电极333及与所述第三触控电极333互电容的第一触控电极331设置在所述上区域。\n\n[0052]在本实施例中，上区域和下区域的数量均为一个，上区域位于所述下区域远离所述触控控制模块20的一端。但在一些实施例中，上区域和下区域的数量可以为至少两个，上区域和下区域交替设置，此时第一引线334和第三引线336异层设置。\n\n[0053]具体的，所述第一引线334、所述第二引线335和所述第三引线336均设置在所述触控层33或过桥层31。附图2仅示出各引线在过桥层31的结构，但并不限于此。\n\n[0054]比如，所述第一引线334设置在所述触控层33和所述过桥层31中的一层，所述第二引线335和所述第三引线336均设置在所述触控层33和所述过桥层31中的另一层。\n\n[0055]在本实施例所述的显示模组100中，所述第二触控电极332和所述第三触控电极333均为感测电极和驱动电极中的一种，所述第一触控电极331为所述感测和所述驱动电极中的另一种。\n\n[0056]也即，第二触控电极332和第三触控电极333为同种触控电极，第一触控电极331和第二触控电极332为不同种的触控电极。\n\n[0057]本申请的显示模组通过在每条第一触控电极和第二触控电极通道的共同的远端区域增设一根与第一触控电极互电容的第三触控电极，进而提高了显示模组远离触控控制模块的部分的边缘区域的触控灵敏度。\n\n[0058]以上对本申请实施例所提供的一种显示模组进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10821, 23875, '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种显示面板及其制备方法。\n\n背景技术\n\n[0002]在现有技术中，为提高发光二极管的光利用率，通常采用将反射膜贴在发光二极管基板，使其将发光二极管出射的光及其上方扩散膜反射回来的光重新反射到液晶显示器中，但，贴附的反射膜的厚度比较厚，影响显示面板的性能，且成本高，不利于减小产品的周期；且反射膜的制备与常规薄膜晶体管制程不兼容，进而生产成本增高。\n\n发明内容\n\n[0003]本申请提供一种显示面板及其制备方法，以提高显示面板的性能。\n\n[0004]本申请提供一种显示面板，包括：\n\n[0005]基板；\n\n[0006]薄膜晶体管层，所述薄膜晶体管层设置于所述基板上；\n\n[0007]反射层，所述反射层设置于所述薄膜晶体管层上，所述反射层包括若干第一分层和若干第二分层，若干所述第一分层和若干所述第二分层依次层叠设置，若干所述第一分层由第一种折射率材料形成，若干所述第二分层由第二种折射率材料形成，所述反射层具有第一通孔，所述第一通孔暴露所述薄膜晶体管层；\n\n[0008]附加层，所述附加层设置于所述反射层上，所述附加层具有第二通孔，所述第一通孔与所述第二通孔贯通以暴露所述薄膜晶体管层，所述附加层包括微粒；以及\n\n[0009]迷你发光二极管，所述迷你发光二极管设置于所述第一通孔和所述第二通孔中以电连接所述薄膜晶体管层。\n\n[0010]在本申请所提供的显示面板中，所述微粒包括聚甲基丙烯酸甲酯、聚苯乙烯、SiO2和TiO2中的一种或几种组合。\n\n[0011]在本申请所提供的显示面板中，所述微粒的直径为5微米-30微米。\n\n[0012]在本申请所提供的显示面板中，所述第一分层的厚度为55纳米-65纳米，所述第二分层的厚度为65纳米-85纳米。\n\n[0013]在本申请所提供的显示面板中，所述第一种折射率材料的折射率材料大于所述第二种折射率材料的折射率材料，所述第一种折射率材料的折射率为1.7-2.2，所述第二种折射率材料的折射率为1.35-1.55。\n\n[0014]本申请提供一种显示面板的制备方法，包括：\n\n[0015]基板；\n\n[0016]在所述基板上形成薄膜晶体管层；\n\n[0017]在所述薄膜晶体管层上依次交替层叠设置若干第一分层和若干第二分层形成反射层，若干所述第一分层由第一种折射率材料形成，若干所述第二分层由第二种折射率材料形成；\n\n[0018]在所述反射层上形成附加层，所述附加层包括微粒；\n\n[0019]对所述反射层和所述附加层进行蚀刻形成第一通孔和第二通孔，所述第一通孔与所述第二通孔贯通以暴露所述薄膜晶体管层；以及\n\n[0020]在所述第一通孔和所述第二通孔中设置迷你发光二极管以电连接所述薄膜晶体管层。\n\n[0021]在本申请所提供显示面板的制备方法中，所述微粒包括聚甲基丙烯酸甲酯、聚苯乙烯、SiO2和TiO2中的一种或几种组合。\n\n[0022]在本申请所提供显示面板的制备方法中，所述微粒的直径为5微米-30微米。\n\n[0023]在本申请所提供显示面板的制备方法中，所述第一分层的厚度为55纳米-65纳米，所述第二分层的厚度为65纳米-85纳米。\n\n[0024]在本申请所提供显示面板的制备方法中，所述第一种折射率材料的折射率材料大于所述第二种折射率材料的折射率材料，所述第一种折射率材料的折射率为1.7-2.2，所述第二种折射率材料的折射率为1.35-1.55。\n\n[0025]本申请提供一种显示面板及其制备方法，显示面板包括基板、薄膜晶体管层、反射层、附加层和迷你发光二极管，薄膜晶体管层设置于基板上，反射层设置于薄膜晶体管层上，反射层由两种不同折射率的材料交替层叠设置形成，反射层具有第一通孔，第一通孔暴露薄膜晶体管层，附加层设置于反射层上，附加层具有第二通孔，第一通孔与第二通孔贯通以暴露薄膜晶体管层，附加层包括微粒，迷你发光二极管设置于第一通孔和第二通孔中以电连接薄膜晶体管层。在本申请中，通过交替层叠设置不同折射率的材料形成反射层，再通过在反射层上设置附加层，提高了光的利用率，并提高了光线的均匀性，进而提高了显示面板的性能。\n\n附图说明\n\n[0026]为了更清楚地说明本申请中的技术方案，下面将对实施方式描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施方式，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0027]图1为本申请所提供的显示面板的结构剖视图。\n\n[0028]图2为本申请所提供的薄膜晶体管的结构剖视图\n\n[0029]图3为本申请提供的反射层的结构剖视图。\n\n[0030]图4为本申请提供的反射层的反射率曲线示意图。\n\n[0031]图5为本申请提供的反射层和附加层的第一种结构剖视图。\n\n[0032]图6为本申请提供的反射层和附加层的第二种结构剖视图。\n\n[0033]图7为本申请提供的显示面板的制备方法的流程剖视图。\n\n具体实施方式\n\n[0034]下面将结合本申请实施方式中的附图，对本申请中的技术方案进行清楚、完整地描述。显然，所描述的实施方式仅仅是本申请一部分实施方式，而不是全部的实施方式。基于本申请中的实施方式，本领域技术人员在没有做出创造性劳动前提下所获得的所有其他实施方式，都属于本申请保护的范围。\n\n[0035]本申请提供一种显示面板。请参阅图1，图1为本申请所提供的显示面板的剖视图。所述显示面板10包括基板100、薄膜晶体管层200、反射层300、附加层400和迷你发光二极管500。\n\n[0036]所述基板100可以为玻璃基板。\n\n[0037]请参阅图2，图2为本申请所提供的薄膜晶体管的结构剖视图。所述薄膜晶体管层200设置于所述基板100上。所述薄膜晶体管层200覆盖所述基板100。所述薄膜晶体管层200包括薄膜晶体管210。所述薄膜晶体管210包括栅极201、第一保护层202、栅极绝缘203、有源层204、源极205、漏极206和第二保护层207。所述第一保护层202覆盖所述栅极201。所述栅极201的材料包括Mo、Al、Ti、In和Ga中的一种或几种组合。所述栅极绝缘层203设置于所述第一保护层202上。所述栅极绝缘层203的材料包括Al2O3、SiOx和SiNX中的一种或几种组合。所述有源层设204置于所述栅极绝缘层203上。所述有源层204的材料包括非晶硅。所述源极205设置于所述栅极绝缘层203的一端及所述有源层204的一端。所述漏极206设置于所述栅极绝缘层203的另一端及所述有源层204的另一端。所述源极205与所述漏极206相互绝缘。所述第二保护层207覆盖所述源极205、所述漏极206及所述栅极绝缘层203。所述第二保护层207用于保护所述薄膜晶体管210中的结构，避免其他结构或水氧对所述薄膜晶体管210的影响。所述薄膜晶体管210除图2中所示出的结构外，还包括其他结构，此处不一一列出。\n\n[0038]请参阅图3，图3为本申请提供的反射层的结构剖视图。在所述薄膜晶体管层200上设置有反射层300。所述反射层300为分布式布拉格反射层。所述分布式布拉格反射层是一种当光经过不同介质时在界面的地方进行反射的结构。所述反射层300包括若干第一分层301和若干第二分层302。若干所述第一分层301和若干所述第二分层302依次交替层叠设置。所述第一分层301由第一种折射率材料形成。所述第二分层302由第二种折射率材料形成。所述第一种折射率材料的折射率大于所述第二种折射率材料的折射率。所述反射层300具有第一通孔390。所述第一通孔390暴露所述薄膜晶体管层200。\n\n[0039]在另一实施例中，所述第一种折射率材料的折射率为1.7-2.2。所述第二种折射率材料的折射率为1.35-1.55。\n\n[0040]在另一实施例中，所述第一种折射率材料包括SiNx、TiO2、ZnS和Al2O3中的一种或几种组合。所述第二种折射率材料包括SiO2和MgF2中的一种或两种组合。\n\n[0041]在另一实施例中，所述第一分层的厚度为55纳米-65纳米。所述第二分层的厚度为65纳米-85纳米。\n\n[0042]请参阅图4，图4为本申请提供的反射层的反射率曲线示意图。反射层因由两种不同的折射率材料交替层叠形成，光线经过反射层300时，将会对光线进行反射，由于各层膜厚满足四分之一波长，各个界面的反射光相互干涉增强，从而提高反射率，提高了迷你发光二极管的光利用率，并降低功率的消耗，进而提高了显示面板的性能。当反射层300的分层层数不同时，反射层300对光线的反射率不同，6层分层的反射层结构，即由两种不同折射率的材料交替层叠形成共6层分层。后续的8层分层、10层分层和16层分层亦如此，在波长440纳米-490纳米处的反射率为75％及75％以上；8层分层的反射层结构，在波长440纳米-490纳米处的反射率达到85％及85％以上；10层分层的反射层结构，在波长440纳米-490纳米处的反射率达到90％及90％以上；16层分层的反射层结构，在波长440纳米-490纳米处的反射率达到97％及97％以上。\n\n[0043]在本申请中，所述反射层结构蓝光反射率高，可作为蓝光的反射镜，与量子点结合形成高色域的量子点显示器。\n\n[0044]请参阅图5和图6，图5为本申请提供的反射层和附加层的第一种结构剖视图。图6为本申请提供的反射层和附加层的第二种结构剖视图。在所述反射层300上设置附加层400。所述附加层400覆盖所述反射层300。所述附加层400包括微粒。所述微粒的直径为5微米-30微米。所述微粒包括聚甲基丙烯酸甲酯、聚苯乙烯、SiO2和TiO2中的一种或几种组合。所述微粒的形状包括规则的几何图形和不规则的几何图形中的一种或几种组合。规则的几何图形如三角形、正方形、矩形、菱形、平行四边形和圆形等。所述附加层400具有第二通孔401。所述第一通孔390与所述第二通孔401贯通以暴露所述薄膜晶体管层200。\n\n[0045]在本申请中，将反射层结构与附加层结合，当光线经过反射层时，光线经过反射层的反射后，光线到达附加层，光线经过附加层的反射、折射和散射的作用，解决了反射层结构镜面反射的问题，提高了光的均匀性，进而提高了显示面板的性能。\n\n[0046]在所述第一通孔390和所述第二通孔401中设置有所述迷你发光二极管500以电连接所述薄膜晶体管层200。\n\n[0047]所述迷你发光二极管500可以为蓝光迷你发光二极管。\n\n[0048]在另一实施例中，所述迷你发光二极管500的底部设置有一金属膏层600。所述金属膏层600的材料包括Sn、In、Bi、Cu、Al和Mo中的一种或几种组合。在本实施例中，所述金属膏层为锡膏层。所述金属膏层具有粘附性和流动性，利用所述金属膏层600具有的流动性和粘附性，将所述迷你发光二极管500设置于所述金属膏层600上，之后固化所述金属膏层600，进而将所述迷你发光二极管500固定于金属膏层600上，进而使得所述迷你发光二极管500固定于所述薄膜晶体管层200上。将设置有所述金属膏层600的迷你发光二极管500设置于所述第一通孔390和所述第二通孔401中。所述迷你发光二极管500与所述薄膜晶体管层200电连接。\n\n[0049]在本申请中，在迷你发光二极管设置于金属膏层上，利用金属膏层的流动性和粘附性，之后固化金属膏层，进而将所述迷你发光二极管固定于所述薄膜晶体管层上，避免迷你发光二极管在制备或使用的过程中丢失，影响了显示面板的性能。\n\n[0050]本申请提供一种显示面板，在所述显示面板中，将所述反射层与所述附加层结合，所述反射层的结构设置成由两种不同折射率材料形成，当光线经过反射层时，由于各层反射回来的光因相位角的改变而进行建设性干涉，然后互相结合在一起，得到强烈的反射光，然后，反射光经过附加层，通过附加层的反射、散射和折射作用，使得光均匀的落在显示面板中，提高了光的均匀性，并提高了光的反射率，进而提高了迷你发光二极管的发光效率和光利用率，并降低了功耗，进而提高了显示面板的性能，并降低了显示面板的制备成本，且，所述反射层蓝光反射率高，可作为蓝光的反射镜，与量子点结合形成高色域的量子点显示器，\n\n[0051]请参阅图7，图7为本申请提供的显示面板的制备方法的流程剖视图。本申请还提供一种显示面板10的制备方法，包括：\n\n[0052]11、在所述基板100上形成薄膜晶体管层200。\n\n[0053]提供一基板100。所述基板100可以为玻璃基板。在所述基板100上形成薄膜晶体管层200。所述薄膜晶体管层200包括薄膜晶体管210，所述薄膜晶体管210包括栅极201、第一保护层202、栅极绝缘203、有源层204、源极205、漏极206和第二保护层207。所述第一保护层202覆盖所述栅极201。所述栅极201的材料包括Mo、Al、Ti、In和Ga中的一种或几种组合。所述栅极绝缘层203设置于所述第一保护层202上。所述栅极绝缘层203的材料包括Al2O3、SiOx和SiNX中的一种或几种组合。所述有源层204设置于所述栅极绝缘层203上。所述有源层204的材料包括非晶硅。所述源极205设置于所述栅极绝缘层203的一端及所述有源层204的一端。所述漏极206设置于所述栅极绝缘层203的另一端及所述有源层204的另一端。所述源极205与所述漏极206相互绝缘。所述第二保护层207覆盖所述源极205、所述漏极206及所述栅极绝缘层203。所述第二保护层207用于保护所述薄膜晶体管210的结构，避免其他结构或水氧对所述薄膜晶体管210的影响。所述薄膜晶体管210除图2中所示出的结构外，还包括其他结构，此处不一一列出。\n\n[0054]12、在所述薄膜晶体管层200上依次交替层叠设置若干第一分层301和若干第二分层302形成反射层300。\n\n[0055]在所述薄膜晶体管层200上交替层叠沉积第一种折射率材料和第二种折射率材料，形成多层分层的反射层300。所述反射层300的层数不限制。在本实施例中，所述反射层300的分层为8层。即由两种不同折射率的材料交替层叠形成共8层分层。后续的6层分层、10层分层和16分层亦如此，所述反射层300包括第一分层301、第二分层302、第三分层303、第四分层304、第五分层305、第六分层306、第七分层307和第八分层308。所述第一分层301、所述第三分层303、所述第五分层305和所述第七分层307由所述第一种折射率材料形成。所述第一分层301、所述第三分层303、所述第五分层305和所述第七分层307的厚度为55纳米-65纳米。所述第二分层302、所述第四分层304、所述第六分层306和所述第八分层308由第二种折射率材料形成。所述第二分层302、所述第四分层304、所述第六分层306和所述第八分层308的厚度为65纳米-85纳米。所述第一种折射率材料的折射率大于所述第一种折射率材料的折射率。\n\n[0056]在另一实施例中，所述第一种折射率材料的折射率为1.7-2.2。所述第二种折射率材料的折射率为1.35-1.55。\n\n[0057]在另一实施例中，在另一实施例中，所述第一种折射率材料包括SiNx、TiO2、ZnS和Al2O3中的一种或几种组合。所述第二种折射率材料包括SiO2和MgF2中的一种或两种组合。\n\n[0058]13、在所述反射层300上形成附加层400。\n\n[0059]在所述反射层300上设置微粒，形成附加层400。所述微粒的直径为5微米-30微米。所述微粒包括聚甲基丙烯酸甲酯、聚苯乙烯、SiO2和TiO2中的一种或几种组合。所述微粒的形状包括规则的几何图形和不规则的几何图形，规则的几何图形如三角形、正方形、矩形、菱形、平行四边形和圆形等。\n\n[0060]14、对所述反射层300和所述附加层400进行蚀刻形成第一通孔390和第二通孔401。\n\n[0061]所述第一通孔390与所述第二通孔401贯通以暴露所述薄膜晶体管层200。所述蚀刻方法不限制，可根据具体需求采用相应的蚀刻方法。\n\n[0062]15、在所述第一通孔390和所述第二通孔401中设置迷你发光二极管500。\n\n[0063]具体的，将所述迷你发光二极管500设置于一金属膏层600上，将设置有金属膏层600的迷你发光二极管500设置于所述第一通孔390和所述第二通孔401中。所述迷你发光二极管500可以为蓝光发光二极管。所述迷你发光二极管500与所述薄膜晶体管层200电连接。所述金属膏层600的材料包括Sn、In、Bi、Cu、Al和Mo中的一种或几种组合。在本实施例中，所述金属膏层600为锡膏层。\n\n[0064]在本申请中，利用金属膏层的流动性和粘附性，在迷你发光二极管设置于金属膏层上，之后固化金属膏层，进而将所述迷你发光二极管固定于所述金属膏层上，进而将所述迷你发光二极管固定于所述薄膜晶体管层上，避免迷你发光二极管在制备或使用的过程中丢失，影响了显示面板的性能。\n\n[0065]本申请提供一种显示面板及其制备方法，在所述显示面板的制备方法中，所述反射层的结构采用两种不同折射率的材料依次交替层叠设置于所述薄膜晶体管层，在本申请中，所述反射层结构简单，与薄膜晶体管层制程兼容性较好，成本低，易制备，进而提高了显示面板的制备效率，并降低了显示面板的制备成本。\n\n[0066]以上对本申请实施方式提供了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施方式的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种显示面板及其制备方法。\n\n背景技术\n\n[0002]在现有技术中，为提高发光二极管的光利用率，通常采用将反射膜贴在发光二极管基板，使其将发光二极管出射的光及其上方扩散膜反射回来的光重新反射到液晶显示器中，但，贴附的反射膜的厚度比较厚，影响显示面板的性能，且成本高，不利于减小产品的周期；且反射膜的制备与常规薄膜晶体管制程不兼容，进而生产成本增高。\n\n发明内容\n\n[0003]本申请提供一种显示面板及其制备方法，以提高显示面板的性能。\n\n[0004]本申请提供一种显示面板，包括：\n\n[0005]基板；\n\n[0006]薄膜晶体管层，所述薄膜晶体管层设置于所述基板上；\n\n[0007]反射层，所述反射层设置于所述薄膜晶体管层上，所述反射层包括若干第一分层和若干第二分层，若干所述第一分层和若干所述第二分层依次层叠设置，若干所述第一分层由第一种折射率材料形成，若干所述第二分层由第二种折射率材料形成，所述反射层具有第一通孔，所述第一通孔暴露所述薄膜晶体管层；\n\n[0008]附加层，所述附加层设置于所述反射层上，所述附加层具有第二通孔，所述第一通孔与所述第二通孔贯通以暴露所述薄膜晶体管层，所述附加层包括微粒；以及\n\n[0009]迷你发光二极管，所述迷你发光二极管设置于所述第一通孔和所述第二通孔中以电连接所述薄膜晶体管层。\n\n[0010]在本申请所提供的显示面板中，所述微粒包括聚甲基丙烯酸甲酯、聚苯乙烯、SiO2和TiO2中的一种或几种组合。\n\n[0011]在本申请所提供的显示面板中，所述微粒的直径为5微米-30微米。\n\n[0012]在本申请所提供的显示面板中，所述第一分层的厚度为55纳米-65纳米，所述第二分层的厚度为65纳米-85纳米。\n\n[0013]在本申请所提供的显示面板中，所述第一种折射率材料的折射率材料大于所述第二种折射率材料的折射率材料，所述第一种折射率材料的折射率为1.7-2.2，所述第二种折射率材料的折射率为1.35-1.55。\n\n[0014]本申请提供一种显示面板的制备方法，包括：\n\n[0015]基板；\n\n[0016]在所述基板上形成薄膜晶体管层；\n\n[0017]在所述薄膜晶体管层上依次交替层叠设置若干第一分层和若干第二分层形成反射层，若干所述第一分层由第一种折射率材料形成，若干所述第二分层由第二种折射率材料形成；\n\n[0018]在所述反射层上形成附加层，所述附加层包括微粒；\n\n[0019]对所述反射层和所述附加层进行蚀刻形成第一通孔和第二通孔，所述第一通孔与所述第二通孔贯通以暴露所述薄膜晶体管层；以及\n\n[0020]在所述第一通孔和所述第二通孔中设置迷你发光二极管以电连接所述薄膜晶体管层。\n\n[0021]在本申请所提供显示面板的制备方法中，所述微粒包括聚甲基丙烯酸甲酯、聚苯乙烯、SiO2和TiO2中的一种或几种组合。\n\n[0022]在本申请所提供显示面板的制备方法中，所述微粒的直径为5微米-30微米。\n\n[0023]在本申请所提供显示面板的制备方法中，所述第一分层的厚度为55纳米-65纳米，所述第二分层的厚度为65纳米-85纳米。\n\n[0024]在本申请所提供显示面板的制备方法中，所述第一种折射率材料的折射率材料大于所述第二种折射率材料的折射率材料，所述第一种折射率材料的折射率为1.7-2.2，所述第二种折射率材料的折射率为1.35-1.55。\n\n[0025]本申请提供一种显示面板及其制备方法，显示面板包括基板、薄膜晶体管层、反射层、附加层和迷你发光二极管，薄膜晶体管层设置于基板上，反射层设置于薄膜晶体管层上，反射层由两种不同折射率的材料交替层叠设置形成，反射层具有第一通孔，第一通孔暴露薄膜晶体管层，附加层设置于反射层上，附加层具有第二通孔，第一通孔与第二通孔贯通以暴露薄膜晶体管层，附加层包括微粒，迷你发光二极管设置于第一通孔和第二通孔中以电连接薄膜晶体管层。在本申请中，通过交替层叠设置不同折射率的材料形成反射层，再通过在反射层上设置附加层，提高了光的利用率，并提高了光线的均匀性，进而提高了显示面板的性能。\n\n附图说明\n\n[0026]为了更清楚地说明本申请中的技术方案，下面将对实施方式描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施方式，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0027]图1为本申请所提供的显示面板的结构剖视图。\n\n[0028]图2为本申请所提供的薄膜晶体管的结构剖视图\n\n[0029]图3为本申请提供的反射层的结构剖视图。\n\n[0030]图4为本申请提供的反射层的反射率曲线示意图。\n\n[0031]图5为本申请提供的反射层和附加层的第一种结构剖视图。\n\n[0032]图6为本申请提供的反射层和附加层的第二种结构剖视图。\n\n[0033]图7为本申请提供的显示面板的制备方法的流程剖视图。\n\n具体实施方式\n\n[0034]下面将结合本申请实施方式中的附图，对本申请中的技术方案进行清楚、完整地描述。显然，所描述的实施方式仅仅是本申请一部分实施方式，而不是全部的实施方式。基于本申请中的实施方式，本领域技术人员在没有做出创造性劳动前提下所获得的所有其他实施方式，都属于本申请保护的范围。\n\n[0035]本申请提供一种显示面板。请参阅图1，图1为本申请所提供的显示面板的剖视图。所述显示面板10包括基板100、薄膜晶体管层200、反射层300、附加层400和迷你发光二极管500。\n\n[0036]所述基板100可以为玻璃基板。\n\n[0037]请参阅图2，图2为本申请所提供的薄膜晶体管的结构剖视图。所述薄膜晶体管层200设置于所述基板100上。所述薄膜晶体管层200覆盖所述基板100。所述薄膜晶体管层200包括薄膜晶体管210。所述薄膜晶体管210包括栅极201、第一保护层202、栅极绝缘203、有源层204、源极205、漏极206和第二保护层207。所述第一保护层202覆盖所述栅极201。所述栅极201的材料包括Mo、Al、Ti、In和Ga中的一种或几种组合。所述栅极绝缘层203设置于所述第一保护层202上。所述栅极绝缘层203的材料包括Al2O3、SiOx和SiNX中的一种或几种组合。所述有源层设204置于所述栅极绝缘层203上。所述有源层204的材料包括非晶硅。所述源极205设置于所述栅极绝缘层203的一端及所述有源层204的一端。所述漏极206设置于所述栅极绝缘层203的另一端及所述有源层204的另一端。所述源极205与所述漏极206相互绝缘。所述第二保护层207覆盖所述源极205、所述漏极206及所述栅极绝缘层203。所述第二保护层207用于保护所述薄膜晶体管210中的结构，避免其他结构或水氧对所述薄膜晶体管210的影响。所述薄膜晶体管210除图2中所示出的结构外，还包括其他结构，此处不一一列出。\n\n[0038]请参阅图3，图3为本申请提供的反射层的结构剖视图。在所述薄膜晶体管层200上设置有反射层300。所述反射层300为分布式布拉格反射层。所述分布式布拉格反射层是一种当光经过不同介质时在界面的地方进行反射的结构。所述反射层300包括若干第一分层301和若干第二分层302。若干所述第一分层301和若干所述第二分层302依次交替层叠设置。所述第一分层301由第一种折射率材料形成。所述第二分层302由第二种折射率材料形成。所述第一种折射率材料的折射率大于所述第二种折射率材料的折射率。所述反射层300具有第一通孔390。所述第一通孔390暴露所述薄膜晶体管层200。\n\n[0039]在另一实施例中，所述第一种折射率材料的折射率为1.7-2.2。所述第二种折射率材料的折射率为1.35-1.55。\n\n[0040]在另一实施例中，所述第一种折射率材料包括SiNx、TiO2、ZnS和Al2O3中的一种或几种组合。所述第二种折射率材料包括SiO2和MgF2中的一种或两种组合。\n\n[0041]在另一实施例中，所述第一分层的厚度为55纳米-65纳米。所述第二分层的厚度为65纳米-85纳米。\n\n[0042]请参阅图4，图4为本申请提供的反射层的反射率曲线示意图。反射层因由两种不同的折射率材料交替层叠形成，光线经过反射层300时，将会对光线进行反射，由于各层膜厚满足四分之一波长，各个界面的反射光相互干涉增强，从而提高反射率，提高了迷你发光二极管的光利用率，并降低功率的消耗，进而提高了显示面板的性能。当反射层300的分层层数不同时，反射层300对光线的反射率不同，6层分层的反射层结构，即由两种不同折射率的材料交替层叠形成共6层分层。后续的8层分层、10层分层和16层分层亦如此，在波长440纳米-490纳米处的反射率为75％及75％以上；8层分层的反射层结构，在波长440纳米-490纳米处的反射率达到85％及85％以上；10层分层的反射层结构，在波长440纳米-490纳米处的反射率达到90％及90％以上；16层分层的反射层结构，在波长440纳米-490纳米处的反射率达到97％及97％以上。\n\n[0043]在本申请中，所述反射层结构蓝光反射率高，可作为蓝光的反射镜，与量子点结合形成高色域的量子点显示器。\n\n[0044]请参阅图5和图6，图5为本申请提供的反射层和附加层的第一种结构剖视图。图6为本申请提供的反射层和附加层的第二种结构剖视图。在所述反射层300上设置附加层400。所述附加层400覆盖所述反射层300。所述附加层400包括微粒。所述微粒的直径为5微米-30微米。所述微粒包括聚甲基丙烯酸甲酯、聚苯乙烯、SiO2和TiO2中的一种或几种组合。所述微粒的形状包括规则的几何图形和不规则的几何图形中的一种或几种组合。规则的几何图形如三角形、正方形、矩形、菱形、平行四边形和圆形等。所述附加层400具有第二通孔401。所述第一通孔390与所述第二通孔401贯通以暴露所述薄膜晶体管层200。\n\n[0045]在本申请中，将反射层结构与附加层结合，当光线经过反射层时，光线经过反射层的反射后，光线到达附加层，光线经过附加层的反射、折射和散射的作用，解决了反射层结构镜面反射的问题，提高了光的均匀性，进而提高了显示面板的性能。\n\n[0046]在所述第一通孔390和所述第二通孔401中设置有所述迷你发光二极管500以电连接所述薄膜晶体管层200。\n\n[0047]所述迷你发光二极管500可以为蓝光迷你发光二极管。\n\n[0048]在另一实施例中，所述迷你发光二极管500的底部设置有一金属膏层600。所述金属膏层600的材料包括Sn、In、Bi、Cu、Al和Mo中的一种或几种组合。在本实施例中，所述金属膏层为锡膏层。所述金属膏层具有粘附性和流动性，利用所述金属膏层600具有的流动性和粘附性，将所述迷你发光二极管500设置于所述金属膏层600上，之后固化所述金属膏层600，进而将所述迷你发光二极管500固定于金属膏层600上，进而使得所述迷你发光二极管500固定于所述薄膜晶体管层200上。将设置有所述金属膏层600的迷你发光二极管500设置于所述第一通孔390和所述第二通孔401中。所述迷你发光二极管500与所述薄膜晶体管层200电连接。\n\n[0049]在本申请中，在迷你发光二极管设置于金属膏层上，利用金属膏层的流动性和粘附性，之后固化金属膏层，进而将所述迷你发光二极管固定于所述薄膜晶体管层上，避免迷你发光二极管在制备或使用的过程中丢失，影响了显示面板的性能。\n\n[0050]本申请提供一种显示面板，在所述显示面板中，将所述反射层与所述附加层结合，所述反射层的结构设置成由两种不同折射率材料形成，当光线经过反射层时，由于各层反射回来的光因相位角的改变而进行建设性干涉，然后互相结合在一起，得到强烈的反射光，然后，反射光经过附加层，通过附加层的反射、散射和折射作用，使得光均匀的落在显示面板中，提高了光的均匀性，并提高了光的反射率，进而提高了迷你发光二极管的发光效率和光利用率，并降低了功耗，进而提高了显示面板的性能，并降低了显示面板的制备成本，且，所述反射层蓝光反射率高，可作为蓝光的反射镜，与量子点结合形成高色域的量子点显示器，\n\n[0051]请参阅图7，图7为本申请提供的显示面板的制备方法的流程剖视图。本申请还提供一种显示面板10的制备方法，包括：\n\n[0052]11、在所述基板100上形成薄膜晶体管层200。\n\n[0053]提供一基板100。所述基板100可以为玻璃基板。在所述基板100上形成薄膜晶体管层200。所述薄膜晶体管层200包括薄膜晶体管210，所述薄膜晶体管210包括栅极201、第一保护层202、栅极绝缘203、有源层204、源极205、漏极206和第二保护层207。所述第一保护层202覆盖所述栅极201。所述栅极201的材料包括Mo、Al、Ti、In和Ga中的一种或几种组合。所述栅极绝缘层203设置于所述第一保护层202上。所述栅极绝缘层203的材料包括Al2O3、SiOx和SiNX中的一种或几种组合。所述有源层204设置于所述栅极绝缘层203上。所述有源层204的材料包括非晶硅。所述源极205设置于所述栅极绝缘层203的一端及所述有源层204的一端。所述漏极206设置于所述栅极绝缘层203的另一端及所述有源层204的另一端。所述源极205与所述漏极206相互绝缘。所述第二保护层207覆盖所述源极205、所述漏极206及所述栅极绝缘层203。所述第二保护层207用于保护所述薄膜晶体管210的结构，避免其他结构或水氧对所述薄膜晶体管210的影响。所述薄膜晶体管210除图2中所示出的结构外，还包括其他结构，此处不一一列出。\n\n[0054]12、在所述薄膜晶体管层200上依次交替层叠设置若干第一分层301和若干第二分层302形成反射层300。\n\n[0055]在所述薄膜晶体管层200上交替层叠沉积第一种折射率材料和第二种折射率材料，形成多层分层的反射层300。所述反射层300的层数不限制。在本实施例中，所述反射层300的分层为8层。即由两种不同折射率的材料交替层叠形成共8层分层。后续的6层分层、10层分层和16分层亦如此，所述反射层300包括第一分层301、第二分层302、第三分层303、第四分层304、第五分层305、第六分层306、第七分层307和第八分层308。所述第一分层301、所述第三分层303、所述第五分层305和所述第七分层307由所述第一种折射率材料形成。所述第一分层301、所述第三分层303、所述第五分层305和所述第七分层307的厚度为55纳米-65纳米。所述第二分层302、所述第四分层304、所述第六分层306和所述第八分层308由第二种折射率材料形成。所述第二分层302、所述第四分层304、所述第六分层306和所述第八分层308的厚度为65纳米-85纳米。所述第一种折射率材料的折射率大于所述第一种折射率材料的折射率。\n\n[0056]在另一实施例中，所述第一种折射率材料的折射率为1.7-2.2。所述第二种折射率材料的折射率为1.35-1.55。\n\n[0057]在另一实施例中，在另一实施例中，所述第一种折射率材料包括SiNx、TiO2、ZnS和Al2O3中的一种或几种组合。所述第二种折射率材料包括SiO2和MgF2中的一种或两种组合。\n\n[0058]13、在所述反射层300上形成附加层400。\n\n[0059]在所述反射层300上设置微粒，形成附加层400。所述微粒的直径为5微米-30微米。所述微粒包括聚甲基丙烯酸甲酯、聚苯乙烯、SiO2和TiO2中的一种或几种组合。所述微粒的形状包括规则的几何图形和不规则的几何图形，规则的几何图形如三角形、正方形、矩形、菱形、平行四边形和圆形等。\n\n[0060]14、对所述反射层300和所述附加层400进行蚀刻形成第一通孔390和第二通孔401。\n\n[0061]所述第一通孔390与所述第二通孔401贯通以暴露所述薄膜晶体管层200。所述蚀刻方法不限制，可根据具体需求采用相应的蚀刻方法。\n\n[0062]15、在所述第一通孔390和所述第二通孔401中设置迷你发光二极管500。\n\n[0063]具体的，将所述迷你发光二极管500设置于一金属膏层600上，将设置有金属膏层600的迷你发光二极管500设置于所述第一通孔390和所述第二通孔401中。所述迷你发光二极管500可以为蓝光发光二极管。所述迷你发光二极管500与所述薄膜晶体管层200电连接。所述金属膏层600的材料包括Sn、In、Bi、Cu、Al和Mo中的一种或几种组合。在本实施例中，所述金属膏层600为锡膏层。\n\n[0064]在本申请中，利用金属膏层的流动性和粘附性，在迷你发光二极管设置于金属膏层上，之后固化金属膏层，进而将所述迷你发光二极管固定于所述金属膏层上，进而将所述迷你发光二极管固定于所述薄膜晶体管层上，避免迷你发光二极管在制备或使用的过程中丢失，影响了显示面板的性能。\n\n[0065]本申请提供一种显示面板及其制备方法，在所述显示面板的制备方法中，所述反射层的结构采用两种不同折射率的材料依次交替层叠设置于所述薄膜晶体管层，在本申请中，所述反射层结构简单，与薄膜晶体管层制程兼容性较好，成本低，易制备，进而提高了显示面板的制备效率，并降低了显示面板的制备成本。\n\n[0066]以上对本申请实施方式提供了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施方式的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10822, 23876, '技术领域\n\n[0001]本申请及显示领域，具体涉及一种显示面板及其制备方法。\n\n背景技术\n\n[0002]在现有技术中，作为液晶显示器的背光，为提高发光二极管的光利用率，通常采用将反射膜贴在发光二极管基板上，使其将发光二极管出射的光及其上方扩散膜反射回来的光重新反射到液晶显示器中，但，贴附的反射膜的厚度比较厚，使得发光二极管的光利用率降低，进而成本增高，并影响显示面板的性能；且反射膜的制备工艺与常规晶体管制程不兼容，造成成本增加，且产品的生产周期长。\n\n发明内容\n\n[0003]本申请提供一种显示面板及其制备方法，以提高显示面板的性能。\n\n[0004]本申请提供一种显示面板，包括：\n\n[0005]基板；\n\n[0006]薄膜晶体管层，所述薄膜晶体管层设置于所述基板上；\n\n[0007]反射层，所述反射层由若干第一分层和若干第二分层依次交替层叠设置于所述薄膜晶体管层上形成，若干所述第一分层由第一种折射率材料形成，若干所述第二分层由第二种折射率材料形成，所述反射层具有通孔，所述通孔暴露所述薄膜晶体管层；以及\n\n[0008]迷你发光二极管，所述迷你发光二极管设置于所述通孔中，所述迷你发光二极管与所述薄膜晶体管层电连接。\n\n[0009]在本申请所提供的显示面板中，所述第一种折射率材料的折射率大于所述第二种折射率材料的折射率。\n\n[0010]在本申请所提供的显示面板中，若干所述第一分层的厚度为55纳米-65纳米，若干所述第二分层的厚度为65纳米-85纳米。\n\n[0011]在本申请所提供的显示面板中，所述第一种折射率材料的折射率为1.7-2.2，所述第二种折射率材料的折射率为1.35-1.55。\n\n[0012]在本申请所提供的显示面板中，所述第一种折射率材料包括SiNx、TiO2、ZnS和Al2O3中的一种或几种组合，所述第二种折射率材料包括SiO2和MgF2中的一种或两种组合。\n\n[0013]本申请提供一种显示面板的制备方法，包括：\n\n[0014]提供一基板；\n\n[0015]在所述基板上形成薄膜晶体管层；\n\n[0016]在所述薄膜晶体管层上依次交替层叠设置若干第一分层和若干第二分层形成反射层，若干所述第一分层由第一种折射率材料形成若干，所述第二分层由第二种折射率材料形成；\n\n[0017]对所述反射层进行蚀刻形成通孔，所述通孔暴露所述薄膜晶体管层；\n\n[0018]将迷你发光二极管设置于所述通孔中，所述迷你发光二极管与所述薄膜晶体管层电连接。\n\n[0019]在本申请所提供显示面板的制备方法中，所述第一种折射率材料的折射率大于所述第二种折射率材料的折射率。\n\n[0020]在本申请所提供显示面板的制备方法中，若干所述第一分层的厚度为55纳米-65纳米，若干所述第二分层的厚度为65纳米-85纳米。\n\n[0021]在本申请所提供显示面板的制备方法中，所述第一种折射率材料的折射率为1.7-2.2，所述第二种折射率材料的折射率为1.35-1.55。\n\n[0022]在本申请所提供显示面板的制备方法中，所述第一种折射率材料包括SiNx、TiO2、ZnS和Al2O3中的一种或几种组合，所述第二种折射率材料包括SiO2和MgF2中的一种或两种组合。\n\n[0023]本申请提供一种显示面板及其制备方法，所述显示面板包括基板、薄膜晶体管层、反射层和迷你发光二极管，所述薄膜晶体管层设置于所述基板上，所述反射层设置于所述薄膜晶体管层上，所述反射层由两种不同折射率的材料交替层叠设置形成，所述反射层具有通孔，所述通孔暴露所述薄膜晶体管层，所述迷你发光二极管设置于所述通孔中以电连接所述薄膜晶体管层。在本申请中，反射层采用两种不同的折射率的材料交替层叠设置形成，将反射层与迷你发光二极管结合，提高了迷你发光二极管背光的亮度，进而提高了光的利用率，并降低了功率消耗，进而提高了显示面板的性能。\n\n附图说明\n\n[0024]为了更清楚地说明本申请中的技术方案，下面将对实施方式描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施方式，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0025]图1为本申请所提供的显示面板的结构剖视图。\n\n[0026]图2为本申请所提供的薄膜晶体管的结构剖视图\n\n[0027]图3为本申请提供的反射层的结构剖视图。\n\n[0028]图4为本申请提供的反射层的反射率曲线示意图。\n\n[0029]图5为本申请提供的显示面板的制备方法的流程剖视图。\n\n具体实施方式\n\n[0030]下面将结合本申请实施方式中的附图，对本申请中的技术方案进行清楚、完整地描述。显然，所描述的实施方式仅仅是本申请一部分实施方式，而不是全部的实施方式。基于本申请中的实施方式，本领域技术人员在没有做出创造性劳动前提下所获得的所有其他实施方式，都属于本申请保护的范围。\n\n[0031]本申请提供一种显示面板。请参阅图1，图1为本申请所提供的显示面板的剖视图。所述显示面板10包括基板100、薄膜晶体管层200、反射层300、和迷你发光二极管400。\n\n[0032]所述基板100可以为玻璃基板。\n\n[0033]请参阅图2，图2为本申请所提供的薄膜晶体管的结构剖视图。所述薄膜晶体管层200设置于所述基板100上。所述薄膜晶体管层200覆盖所述基板100。所述薄膜晶体管层200包括薄膜晶体管210。所述薄膜晶体管210包括栅极201、第一保护层202、栅极绝缘203、有源层204、源极205、漏极206和第二保护层207。所述第一保护层202覆盖所述栅极201。所述栅极201的材料包括Mo、Al、Ti、In和Ga中的一种或几种组合。所述栅极绝缘层203设置于所述第一保护层202上。所述栅极绝缘层203的材料包括Al2O3、SiOx和SiNX中的一种或几种组合。所述有源层设204置于所述栅极绝缘层203上。所述有源层204的材料包括非晶硅。所述源极205设置于所述栅极绝缘层203的一端及所述有源层204的一端。所述漏极206设置于所述栅极绝缘层203的另一端及所述有源层204的另一端。所述源极205与所述漏极206相互绝缘。所述第二保护层207覆盖所述源极205、所述漏极206及所述栅极绝缘层203。所述第二保护层207用于保护所述薄膜晶体管层200的结构，避免其他结构或水氧对所述薄膜晶体管层200的影响。所述薄膜晶体管210除图2中所示出的结构外，还包括其他结构，此处不一一列出。\n\n[0034]请参阅图3，图3为本申请提供的反射层的结构剖视图。在所述薄膜晶体管层200上设置有反射层300。所述反射层300覆盖所述薄膜晶体管层200。所述反射层300为分布式布拉格反射层。所述分布式布拉格反射层是当光经过不同的介质时在界面的地方会反射的反射层。所述反射层300由两种不同折射率的材料依次交替层叠形成若干第一分层301及若干第二分层302。在本实施例中，所述反射层300具有8层分层，即由两种不同折射率的材料交替层叠形成共8层分层。后续的6层分层、10层分层和16分层亦如此，具体地，在所述薄膜晶体管层200上依次层叠设置第一分层301、第二分层302、第三分层303、第四分层304、第五分层305、第六分层306、第七分层307和第八分层308。所述第一分层301、所述第三分层303、所述第五分层305和所述第七分层307由第一种折射率材料形成。所述第二分层302、所述第四分层304、所述第六分层306和所述第八分层308由第二种折射率材料形成。所述第一种折射率材料的折射率大于所述第二种折射率材料的折射率。所述反射层300具有通孔390。所述通孔390暴露所述薄膜晶体管层200。\n\n[0035]在另一实施例中，所述第一种折射率材料的折射率为1.7-2.2。所述第二种折射率材料的折射率为1.35-1.55。\n\n[0036]在另一实施例中，所述第一种折射率材料包括SiNx、TiO2、ZnS和Al2O3中的一种或几种组合。所述第二种折射率材料包括SiO2和MgF2中的一种或两种组合。\n\n[0037]在另一实施例中，若干所述第一分层的厚度为55纳米-65纳米。若干所述第二分层的厚度为65纳米-85纳米。\n\n[0038]请参阅图4，图4为本申请提供的反射层的反射率曲线示意图。反射层因由两种不同的折射率材料交替层叠形成，当光线经过反射层300时，将会对光线进行反射，由于各层反射回来的光因相位角的改变而进行建设性干涉，然后互相结合在一起，得到强烈的反射光，提高了迷你发光二极管的光利用率，并降低功率的消耗，进而提高了显示面板的性能。当反射层300的分层层数不同时，反射层300对光线的反射率不同，6层分层的反射层结构，在波长440纳米-490纳米处的反射率为75％及75％以上；8层分层的反射层结构，在波长440纳米-490纳米处的反射率达到85％及85％以上；10层分层的反射层结构，在波长440纳米-490纳米处的反射率达到90％及90％以上；16层分层的反射层结构，在波长440纳米-490纳米处的反射率达到97％及97％以上。\n\n[0039]在本申请中，所述反射层对蓝光反射率高，可作为蓝光的反射镜，与量子点结合形成高色域的量子点显示器。\n\n[0040]所述通孔390设置有迷你发光二极管400以电连接所述薄膜晶体管层200。\n\n[0041]所述迷你发光二极管400可以为蓝光迷你发光二极管。所述迷你发光二极管400的底部设置有一金属膏层500。将带有所述金属膏层500的迷你发光二极管400设置于所述通孔390中。所述金属膏层500的材料包括Sn、In、Bi、Cu、Al和Mo中的一种或几种组合。在本实施例中，所述金属膏层500为锡膏层。\n\n[0042]在本申请中，将迷你发光二极管设置于金属膏层上，因金属膏层具有流动性和粘附性的特性，之后固化金属膏层，进而将迷你发光二极管固定于金属膏层上，进而将所述迷你发光二极管固定于所述薄膜晶体管层上，避免迷你发光二极管在制备或使用的过程中丢失，影响了显示面板的性能。\n\n[0043]本申请提供一种显示面板，在所述显示面板中，将所述反射层与所述迷你发光二极管结合，因所述反射层的结构设置成由两种不同折射率材料交替层叠形成，当光线经过反射层时，由于各层反射回来的光因相位角的改变而进行建设性干涉，然后互相结合在一起，得到强烈的反射光，提高了光的反射率，进而提高了迷你发光二极管的光利用率，降低了功率消耗，进而提高了显示面板的性能，并降低了显示面板的制备成本，且，所述反射层对蓝光反射率高，可作为蓝光的反射镜，与量子点结合形成高色域的量子点显示器，\n\n[0044]请参阅图5，图5为本申请提供的显示面板的制备方法的流程剖视图。本申请还提供一种显示面板10的制备方法，包括：\n\n[0045]11、在所述基板100上形成薄膜晶体管层200。\n\n[0046]提供一基板100。所述基板100可以为玻璃基板。在所述基板100上形成薄膜晶体管层200。所述薄膜晶体管层200包括薄膜晶体管210，所述薄膜晶体管210包括栅极201、第一保护层202、栅极绝缘203、有源层204、源极205、漏极206和第二保护层207。所述第一保护层202覆盖所述栅极201。所述栅极201的材料包括Mo、Al、Ti、In和Ga中的一种或几种组合。所述栅极绝缘层203设置于所述第一保护层202上。所述栅极绝缘层203的材料包括Al2O3、SiOx和SiNX中的一种或几种组合。所述有源层204设置于所述栅极绝缘层203上。所述有源层204的材料包括非晶硅。所述源极205设置于所述栅极绝缘层203的一端及所述有源层204的一端。所述漏极206设置于所述栅极绝缘层203的另一端及所述有源层204的另一端。所述源极205与所述漏极206相互绝缘。所述第二保护层207覆盖所述源极205、所述漏极206及所述栅极绝缘层203。所述第二保护层207用于保护所述薄膜晶体管层200的结构，避免其他结构或水氧对所述薄膜晶体管层200的影响。所述薄膜晶体管210除图2中所示出的结构外，还包括其他结构，此处不一一列出。\n\n[0047]12、在所述薄膜晶体管层200上依次交替层叠设置若干第一分层301和若干第二分层302形成反射层300。\n\n[0048]在所述薄膜晶体管层200上交替层叠沉积第一种折射率材料和第二种折射率材料，形成多层分层的反射层300。所述反射层300的层数不限制。在本实施例中，所述反射层300的分层为8层。即，由两种不同折射率的材料交替层叠形成共8层分层的反射层。所述反射层300包括第一分层301、第二分层302、第三分层303、第四分层304、第五分层305、第六分层306、第七分层307和第八分层308。所述第一分层301、所述第三分层303、所述第五分层305和所述第七分层307由所述第一种折射率材料形成。所述第一分层301、所述第三分层303、所述第五分层305和所述第七分层307的厚度为55纳米-65纳米。所述第二分层302、所述第四分层304、所述第六分层306和所述第八分层308由第二种折射率材料形成。所述第二分层302、所述第四分层304、所述第六分层306和所述第八分层308的厚度为65纳米-85纳米。所述第一种折射率材料的折射率大于所述第一种折射率材料的折射率。\n\n[0049]在另一实施例中，所述第一种折射率材料的折射率为1.7-2.2。所述第二种折射率材料的折射率为1.35-1.55。\n\n[0050]在另一实施例中，在另一实施例中，所述第一种折射率材料包括SiNx、TiO2、ZnS和Al2O3中的一种或几种组合。所述第二种折射率材料包括SiO2和MgF2中的一种或两种组合。\n\n[0051]13、对所述反射层300进行蚀刻形成通孔390。\n\n[0052]对所述反射层进行干法蚀刻或湿法蚀刻形成通孔390。所述蚀刻方法不限制，可根据具体需求采用相应的蚀刻方法。所述通孔390贯穿所述反射层300以暴露所述薄膜晶体管层200。\n\n[0053]14、将所述迷你发光二极管400设置于所述通孔390中。\n\n[0054]所述迷你发光二极管400可以为蓝光发光二极管。所述迷你发光二极管400与所述薄膜晶体管层200电连接。所述迷你发光二极管400的底部设置有一金属膏层500。将带有所述金属膏层500的迷你发光二极管400设置于所述通孔390中。所述金属膏层500的材料包括Sn、In、Bi、Cu、Al和Mo中的一种或几种组合。在本实施例中，所述金属膏层500为锡膏层。\n\n[0055]本申请提供一种显示面板及其制备方法，在所述显示面板的制备方法中，所述反射层的结构采用两种不同的折射率材料依次交替层叠设置于所述薄膜晶体管层，在本申请中，所述反射层结构简单，与薄膜晶体管层制程兼容性较好，成本低，易制备，进而提高了显示面板的制备效率，并降低了显示面板的制备成本。\n\n[0056]以上对本申请实施方式提供了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施方式的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请及显示领域，具体涉及一种显示面板及其制备方法。\n\n背景技术\n\n[0002]在现有技术中，作为液晶显示器的背光，为提高发光二极管的光利用率，通常采用将反射膜贴在发光二极管基板上，使其将发光二极管出射的光及其上方扩散膜反射回来的光重新反射到液晶显示器中，但，贴附的反射膜的厚度比较厚，使得发光二极管的光利用率降低，进而成本增高，并影响显示面板的性能；且反射膜的制备工艺与常规晶体管制程不兼容，造成成本增加，且产品的生产周期长。\n\n发明内容\n\n[0003]本申请提供一种显示面板及其制备方法，以提高显示面板的性能。\n\n[0004]本申请提供一种显示面板，包括：\n\n[0005]基板；\n\n[0006]薄膜晶体管层，所述薄膜晶体管层设置于所述基板上；\n\n[0007]反射层，所述反射层由若干第一分层和若干第二分层依次交替层叠设置于所述薄膜晶体管层上形成，若干所述第一分层由第一种折射率材料形成，若干所述第二分层由第二种折射率材料形成，所述反射层具有通孔，所述通孔暴露所述薄膜晶体管层；以及\n\n[0008]迷你发光二极管，所述迷你发光二极管设置于所述通孔中，所述迷你发光二极管与所述薄膜晶体管层电连接。\n\n[0009]在本申请所提供的显示面板中，所述第一种折射率材料的折射率大于所述第二种折射率材料的折射率。\n\n[0010]在本申请所提供的显示面板中，若干所述第一分层的厚度为55纳米-65纳米，若干所述第二分层的厚度为65纳米-85纳米。\n\n[0011]在本申请所提供的显示面板中，所述第一种折射率材料的折射率为1.7-2.2，所述第二种折射率材料的折射率为1.35-1.55。\n\n[0012]在本申请所提供的显示面板中，所述第一种折射率材料包括SiNx、TiO2、ZnS和Al2O3中的一种或几种组合，所述第二种折射率材料包括SiO2和MgF2中的一种或两种组合。\n\n[0013]本申请提供一种显示面板的制备方法，包括：\n\n[0014]提供一基板；\n\n[0015]在所述基板上形成薄膜晶体管层；\n\n[0016]在所述薄膜晶体管层上依次交替层叠设置若干第一分层和若干第二分层形成反射层，若干所述第一分层由第一种折射率材料形成若干，所述第二分层由第二种折射率材料形成；\n\n[0017]对所述反射层进行蚀刻形成通孔，所述通孔暴露所述薄膜晶体管层；\n\n[0018]将迷你发光二极管设置于所述通孔中，所述迷你发光二极管与所述薄膜晶体管层电连接。\n\n[0019]在本申请所提供显示面板的制备方法中，所述第一种折射率材料的折射率大于所述第二种折射率材料的折射率。\n\n[0020]在本申请所提供显示面板的制备方法中，若干所述第一分层的厚度为55纳米-65纳米，若干所述第二分层的厚度为65纳米-85纳米。\n\n[0021]在本申请所提供显示面板的制备方法中，所述第一种折射率材料的折射率为1.7-2.2，所述第二种折射率材料的折射率为1.35-1.55。\n\n[0022]在本申请所提供显示面板的制备方法中，所述第一种折射率材料包括SiNx、TiO2、ZnS和Al2O3中的一种或几种组合，所述第二种折射率材料包括SiO2和MgF2中的一种或两种组合。\n\n[0023]本申请提供一种显示面板及其制备方法，所述显示面板包括基板、薄膜晶体管层、反射层和迷你发光二极管，所述薄膜晶体管层设置于所述基板上，所述反射层设置于所述薄膜晶体管层上，所述反射层由两种不同折射率的材料交替层叠设置形成，所述反射层具有通孔，所述通孔暴露所述薄膜晶体管层，所述迷你发光二极管设置于所述通孔中以电连接所述薄膜晶体管层。在本申请中，反射层采用两种不同的折射率的材料交替层叠设置形成，将反射层与迷你发光二极管结合，提高了迷你发光二极管背光的亮度，进而提高了光的利用率，并降低了功率消耗，进而提高了显示面板的性能。\n\n附图说明\n\n[0024]为了更清楚地说明本申请中的技术方案，下面将对实施方式描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施方式，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0025]图1为本申请所提供的显示面板的结构剖视图。\n\n[0026]图2为本申请所提供的薄膜晶体管的结构剖视图\n\n[0027]图3为本申请提供的反射层的结构剖视图。\n\n[0028]图4为本申请提供的反射层的反射率曲线示意图。\n\n[0029]图5为本申请提供的显示面板的制备方法的流程剖视图。\n\n具体实施方式\n\n[0030]下面将结合本申请实施方式中的附图，对本申请中的技术方案进行清楚、完整地描述。显然，所描述的实施方式仅仅是本申请一部分实施方式，而不是全部的实施方式。基于本申请中的实施方式，本领域技术人员在没有做出创造性劳动前提下所获得的所有其他实施方式，都属于本申请保护的范围。\n\n[0031]本申请提供一种显示面板。请参阅图1，图1为本申请所提供的显示面板的剖视图。所述显示面板10包括基板100、薄膜晶体管层200、反射层300、和迷你发光二极管400。\n\n[0032]所述基板100可以为玻璃基板。\n\n[0033]请参阅图2，图2为本申请所提供的薄膜晶体管的结构剖视图。所述薄膜晶体管层200设置于所述基板100上。所述薄膜晶体管层200覆盖所述基板100。所述薄膜晶体管层200包括薄膜晶体管210。所述薄膜晶体管210包括栅极201、第一保护层202、栅极绝缘203、有源层204、源极205、漏极206和第二保护层207。所述第一保护层202覆盖所述栅极201。所述栅极201的材料包括Mo、Al、Ti、In和Ga中的一种或几种组合。所述栅极绝缘层203设置于所述第一保护层202上。所述栅极绝缘层203的材料包括Al2O3、SiOx和SiNX中的一种或几种组合。所述有源层设204置于所述栅极绝缘层203上。所述有源层204的材料包括非晶硅。所述源极205设置于所述栅极绝缘层203的一端及所述有源层204的一端。所述漏极206设置于所述栅极绝缘层203的另一端及所述有源层204的另一端。所述源极205与所述漏极206相互绝缘。所述第二保护层207覆盖所述源极205、所述漏极206及所述栅极绝缘层203。所述第二保护层207用于保护所述薄膜晶体管层200的结构，避免其他结构或水氧对所述薄膜晶体管层200的影响。所述薄膜晶体管210除图2中所示出的结构外，还包括其他结构，此处不一一列出。\n\n[0034]请参阅图3，图3为本申请提供的反射层的结构剖视图。在所述薄膜晶体管层200上设置有反射层300。所述反射层300覆盖所述薄膜晶体管层200。所述反射层300为分布式布拉格反射层。所述分布式布拉格反射层是当光经过不同的介质时在界面的地方会反射的反射层。所述反射层300由两种不同折射率的材料依次交替层叠形成若干第一分层301及若干第二分层302。在本实施例中，所述反射层300具有8层分层，即由两种不同折射率的材料交替层叠形成共8层分层。后续的6层分层、10层分层和16分层亦如此，具体地，在所述薄膜晶体管层200上依次层叠设置第一分层301、第二分层302、第三分层303、第四分层304、第五分层305、第六分层306、第七分层307和第八分层308。所述第一分层301、所述第三分层303、所述第五分层305和所述第七分层307由第一种折射率材料形成。所述第二分层302、所述第四分层304、所述第六分层306和所述第八分层308由第二种折射率材料形成。所述第一种折射率材料的折射率大于所述第二种折射率材料的折射率。所述反射层300具有通孔390。所述通孔390暴露所述薄膜晶体管层200。\n\n[0035]在另一实施例中，所述第一种折射率材料的折射率为1.7-2.2。所述第二种折射率材料的折射率为1.35-1.55。\n\n[0036]在另一实施例中，所述第一种折射率材料包括SiNx、TiO2、ZnS和Al2O3中的一种或几种组合。所述第二种折射率材料包括SiO2和MgF2中的一种或两种组合。\n\n[0037]在另一实施例中，若干所述第一分层的厚度为55纳米-65纳米。若干所述第二分层的厚度为65纳米-85纳米。\n\n[0038]请参阅图4，图4为本申请提供的反射层的反射率曲线示意图。反射层因由两种不同的折射率材料交替层叠形成，当光线经过反射层300时，将会对光线进行反射，由于各层反射回来的光因相位角的改变而进行建设性干涉，然后互相结合在一起，得到强烈的反射光，提高了迷你发光二极管的光利用率，并降低功率的消耗，进而提高了显示面板的性能。当反射层300的分层层数不同时，反射层300对光线的反射率不同，6层分层的反射层结构，在波长440纳米-490纳米处的反射率为75％及75％以上；8层分层的反射层结构，在波长440纳米-490纳米处的反射率达到85％及85％以上；10层分层的反射层结构，在波长440纳米-490纳米处的反射率达到90％及90％以上；16层分层的反射层结构，在波长440纳米-490纳米处的反射率达到97％及97％以上。\n\n[0039]在本申请中，所述反射层对蓝光反射率高，可作为蓝光的反射镜，与量子点结合形成高色域的量子点显示器。\n\n[0040]所述通孔390设置有迷你发光二极管400以电连接所述薄膜晶体管层200。\n\n[0041]所述迷你发光二极管400可以为蓝光迷你发光二极管。所述迷你发光二极管400的底部设置有一金属膏层500。将带有所述金属膏层500的迷你发光二极管400设置于所述通孔390中。所述金属膏层500的材料包括Sn、In、Bi、Cu、Al和Mo中的一种或几种组合。在本实施例中，所述金属膏层500为锡膏层。\n\n[0042]在本申请中，将迷你发光二极管设置于金属膏层上，因金属膏层具有流动性和粘附性的特性，之后固化金属膏层，进而将迷你发光二极管固定于金属膏层上，进而将所述迷你发光二极管固定于所述薄膜晶体管层上，避免迷你发光二极管在制备或使用的过程中丢失，影响了显示面板的性能。\n\n[0043]本申请提供一种显示面板，在所述显示面板中，将所述反射层与所述迷你发光二极管结合，因所述反射层的结构设置成由两种不同折射率材料交替层叠形成，当光线经过反射层时，由于各层反射回来的光因相位角的改变而进行建设性干涉，然后互相结合在一起，得到强烈的反射光，提高了光的反射率，进而提高了迷你发光二极管的光利用率，降低了功率消耗，进而提高了显示面板的性能，并降低了显示面板的制备成本，且，所述反射层对蓝光反射率高，可作为蓝光的反射镜，与量子点结合形成高色域的量子点显示器，\n\n[0044]请参阅图5，图5为本申请提供的显示面板的制备方法的流程剖视图。本申请还提供一种显示面板10的制备方法，包括：\n\n[0045]11、在所述基板100上形成薄膜晶体管层200。\n\n[0046]提供一基板100。所述基板100可以为玻璃基板。在所述基板100上形成薄膜晶体管层200。所述薄膜晶体管层200包括薄膜晶体管210，所述薄膜晶体管210包括栅极201、第一保护层202、栅极绝缘203、有源层204、源极205、漏极206和第二保护层207。所述第一保护层202覆盖所述栅极201。所述栅极201的材料包括Mo、Al、Ti、In和Ga中的一种或几种组合。所述栅极绝缘层203设置于所述第一保护层202上。所述栅极绝缘层203的材料包括Al2O3、SiOx和SiNX中的一种或几种组合。所述有源层204设置于所述栅极绝缘层203上。所述有源层204的材料包括非晶硅。所述源极205设置于所述栅极绝缘层203的一端及所述有源层204的一端。所述漏极206设置于所述栅极绝缘层203的另一端及所述有源层204的另一端。所述源极205与所述漏极206相互绝缘。所述第二保护层207覆盖所述源极205、所述漏极206及所述栅极绝缘层203。所述第二保护层207用于保护所述薄膜晶体管层200的结构，避免其他结构或水氧对所述薄膜晶体管层200的影响。所述薄膜晶体管210除图2中所示出的结构外，还包括其他结构，此处不一一列出。\n\n[0047]12、在所述薄膜晶体管层200上依次交替层叠设置若干第一分层301和若干第二分层302形成反射层300。\n\n[0048]在所述薄膜晶体管层200上交替层叠沉积第一种折射率材料和第二种折射率材料，形成多层分层的反射层300。所述反射层300的层数不限制。在本实施例中，所述反射层300的分层为8层。即，由两种不同折射率的材料交替层叠形成共8层分层的反射层。所述反射层300包括第一分层301、第二分层302、第三分层303、第四分层304、第五分层305、第六分层306、第七分层307和第八分层308。所述第一分层301、所述第三分层303、所述第五分层305和所述第七分层307由所述第一种折射率材料形成。所述第一分层301、所述第三分层303、所述第五分层305和所述第七分层307的厚度为55纳米-65纳米。所述第二分层302、所述第四分层304、所述第六分层306和所述第八分层308由第二种折射率材料形成。所述第二分层302、所述第四分层304、所述第六分层306和所述第八分层308的厚度为65纳米-85纳米。所述第一种折射率材料的折射率大于所述第一种折射率材料的折射率。\n\n[0049]在另一实施例中，所述第一种折射率材料的折射率为1.7-2.2。所述第二种折射率材料的折射率为1.35-1.55。\n\n[0050]在另一实施例中，在另一实施例中，所述第一种折射率材料包括SiNx、TiO2、ZnS和Al2O3中的一种或几种组合。所述第二种折射率材料包括SiO2和MgF2中的一种或两种组合。\n\n[0051]13、对所述反射层300进行蚀刻形成通孔390。\n\n[0052]对所述反射层进行干法蚀刻或湿法蚀刻形成通孔390。所述蚀刻方法不限制，可根据具体需求采用相应的蚀刻方法。所述通孔390贯穿所述反射层300以暴露所述薄膜晶体管层200。\n\n[0053]14、将所述迷你发光二极管400设置于所述通孔390中。\n\n[0054]所述迷你发光二极管400可以为蓝光发光二极管。所述迷你发光二极管400与所述薄膜晶体管层200电连接。所述迷你发光二极管400的底部设置有一金属膏层500。将带有所述金属膏层500的迷你发光二极管400设置于所述通孔390中。所述金属膏层500的材料包括Sn、In、Bi、Cu、Al和Mo中的一种或几种组合。在本实施例中，所述金属膏层500为锡膏层。\n\n[0055]本申请提供一种显示面板及其制备方法，在所述显示面板的制备方法中，所述反射层的结构采用两种不同的折射率材料依次交替层叠设置于所述薄膜晶体管层，在本申请中，所述反射层结构简单，与薄膜晶体管层制程兼容性较好，成本低，易制备，进而提高了显示面板的制备效率，并降低了显示面板的制备成本。\n\n[0056]以上对本申请实施方式提供了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施方式的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10823, 23877, '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种显示面板及其制备方法。\n\n背景技术\n\n[0002]在现有技术中，作为液晶显示器的背光，为提高发光二极管的光利用率，通常采用将反射膜贴在发光二极管基板上，使其将发光二极管出射的光及其上方扩散膜反射回来的光重新反射到液晶显示器中，但，贴附的反射膜的厚度比较厚，影响发光二极管的光利用率，进而成本增高，并影响显示面板的性能；反射膜的制备工艺与常规晶体管制程不兼容，使得成本增高，并使得产品的生产周期增长。\n\n发明内容\n\n[0003]本申请提供一种显示面板及其制备方法，以提高显示面板的性能。\n\n[0004]一种显示面板，包括：\n\n[0005]基板；\n\n[0006]薄膜晶体管层，所述薄膜晶体管层设置于所述基板上；\n\n[0007]反射层，所述反射层由一第一分层、若干第二分层和若干第三分层组成，所述第一分层设置于所述薄膜晶体管层上，若干所述第二分层和若干所述第三分层依次交替层叠设置于所述第一分层上，所述第一分层采用第一种折射率材料形成，若干所述第二分层采用第二种折射率材料形成，若干所述第三分层采用第三种折射率材料形成，所述反射层具有通孔，所述通孔暴露所述薄膜晶体管层；以及\n\n[0008]迷你发光二极管，所述迷你发光二极管设置于所述通孔中，以电连接所述薄膜晶体管层。\n\n[0009]在本申请所提供的显示面板中，所述第一种折射率的折射率材料的折射率小于所述第二种折射率材料的折射率，所述第三种折射率材料的折射率小于所述第一种折射率材料的折射率。\n\n[0010]在本申请所提供的显示面板中，所述第一种折射率材料的折射率为1.90-2.11，所述第二种折射率材料的折射率为2.2-4.6，所述第三种折射率材料的折射率为1.35-1.55。\n\n[0011]在本申请所提供的显示面板中，所述第一分层的厚度为45纳米-54纳米，所述第二分层的厚度为15纳米-25纳米，所述第三分层的厚度为100纳米-130纳米。\n\n[0012]在本申请所提供的显示面板中，所述第一种折射率材料为SiNx，所述第二种折射率材料包括SiO2和MgF中的一种或两种组合，所述第三种折射率材料包括ZnS、TiO2和Si中的一种或几种组合。\n\n[0013]本申请提供一种显示面板的制备方法，包括：\n\n[0014]基板；\n\n[0015]在所述基板上形成薄膜晶体管层；\n\n[0016]在所述薄膜晶体管层上设置第一种折射率材料，形成第一分层；\n\n[0017]在所述第一分层上依次交替层叠设置第二种折射率材料和第三种折射率材料形成若干第二分层和若干第三分层，所述第一分层、若干所述第二分层和所述第三分层成反射层；\n\n[0018]对所述反射层进行蚀刻形成通孔，所述通孔暴露所述薄膜晶体管层；\n\n[0019]在所述通孔中设置迷你发光二极管，以电连接所述薄膜晶体管层。\n\n[0020]在本申请所提供显示面板的制备方法中，所述第一种折射率材料的折射率小于所述第二种折射率材料的折射率，所述第三种折射率材料的折射率小于所述第一种折射率材料的折射率。\n\n[0021]在本申请所提供显示面板的制备方法中，所述第一种折射率材料的折射率为1.90-2.11，所述第二种折射率材料的折射率为2.2-4.6，所述第三种折射率材料的折射率为1.35-1.55。\n\n[0022]在本申请所提供显示面板的制备方法中，所述第一分层的厚度为45纳米-54纳米，所述第二分层的厚度为15纳米-25纳米，所述第三分层的厚度为100纳米-130纳米。\n\n[0023]在本申请所提供显示面板的制备方法中，所述第一种折射率材料为SiNx，所述第二种折射率材料包括SiO2和MgF中的一种或两种组合，所述第三种折射率材料包括ZnS、TiO2和Si中的一种或几种组合。\n\n[0024]本申请提供一种显示面板及其制备方法，所述显示面板包括基板、薄膜晶体管层、反射层和迷你发光二极管，所述薄膜晶体管层设置于所述基板上，所述反射层由一第一分层、若干第二分层和若干第三分层组成，所述第一分层设置于所述薄膜晶体管层上，若干所述第二分层和若干所述第三分层依次交替层叠设置于所述第一分层上，所述第一分层采用第一种折射率材料形成，若干所述第二分层采用第二种折射率材料形成，若干所述第三分层采用第三种折射率材料形成，所述反射层具有通孔，所述通孔暴露所述薄膜晶体管层，所述迷你发光二极管设置于所述通孔中，以电连接所述薄膜晶体管层。在本申请中，若干所述第二分层和若干所述第三分层交替层叠设置于所述第一分层上形成反射层，若干所述第一分层由第一种折射率材料形成，若干所述第二分层由第二种折射率材料形成，若干所述第三分层由第三种折射率材料形成，所述反射层采用高折射率分层设置在低折射率分层两侧，提高了迷你发光二极管的光利用率，并降低了功率消耗，进而提高了显示面板的性能。\n\n附图说明\n\n[0025]为了更清楚地说明本申请中的技术方案，下面将对实施方式描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施方式，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0026]图1为本申请所提供的显示面板的剖视图。\n\n[0027]图2为本申请所提供的薄膜晶体管的结构剖视图。\n\n[0028]图3为本申请所提供的反射层结构及其光线反射路径示意图。\n\n[0029]图4为本申请提供的反射层的反射曲线示意图。\n\n[0030]图5为本申请所提供的另一种反射层结构及其光线反射路径示意图。\n\n[0031]图6为本申请提供的显示面板的制备方法的流程剖视图。\n\n具体实施方式\n\n[0032]下面将结合本申请实施方式中的附图，对本申请中的技术方案进行清楚、完整地描述。显然，所描述的实施方式仅仅是本申请一部分实施方式，而不是全部的实施方式。基于本申请中的实施方式，本领域技术人员在没有做出创造性劳动前提下所获得的所有其他实施方式，都属于本申请保护的范围。\n\n[0033]本申请提供一种显示面板。请参阅图1，图1为本申请所提供的显示面板的剖视图。所述显示面板10包括基板100、薄膜晶体管层200、反射层300和迷你发光二极管400。\n\n[0034]基板100，所述基板100可以为玻璃基板。\n\n[0035]请参阅图2，图2为本申请所提供的薄膜晶体管的结构剖视图。所述薄膜晶体管层200设置于所述基板100上。所述薄膜晶体管层200包括薄膜晶体管210，所述薄膜晶体管210包括栅极201、第一保护层202、栅极绝缘203、有源层204、源极205、漏极206和第二保护层207。所述第一保护层202覆盖所述栅极201。所述栅极201的材料包括Mo、Al、Ti、In和Ga中的一种或几种组合。所述栅极绝缘层203设置于所述第一保护层202上。所述栅极绝缘层203的材料包括Al2O3、SiOx和SiNX中的一种或几种组合。所述有源层设204置于所述栅极绝缘层203上。所述有源层204的材料包括非晶硅。所述源极205设置于所述栅极绝缘层203的一端及所述有源层204的一端。所述漏极206设置于所述栅极绝缘层203的另一端及所述有源层204的另一端。所述源极205与所述漏极206相互绝缘。所述第二保护层207覆盖所述源极205、所述漏极206及所述栅极绝缘层203。所述第二保护层207用于保护所述薄膜晶体管210中的结构，避免其他结构或水氧对所述薄膜晶体管层200的影响。所述薄膜晶体管210除图2中所示出的结构外，还包括其他结构，此处不一一列出。\n\n[0036]请参阅图3，图3为本申请所提供的反射层结构及其光线反射路径示意图。反射层300，所述反射层300设置于所述薄膜晶体管层200上。所述反射层300包括一第一分层310、若干第二分层320和若干第三分层330。所述第一分层310设置于所述薄膜晶体管层200上。若干所述第二分层320和若干所述第三分层303交替层叠设置于所述第一分层310上。在本实施例中，所述反射层具有4层分层的结构。即，在所述第一分层上由两种不同折射率的材料依次交替层叠形成反射层。具体地，在所述第一分层310上依次层叠设置第二分层320、第三分层330和第四分层340。所述第一分层310、所述第二分层320、所述第三分层330和所述第四分层340组成反射层300。所述反射层300为分布式布拉格反射层。所述第一分层310采用第一种折射率材料形成。所述第一种折射材料为高折射率材料。所述第二分层320和所述第四分层340采用第二种折射率材料形成。所述第二种折射率材料为高折射率材料。所述第二种折射率的折射率材料大于所述第一种折射率材料的折射率。所述第三分层330采用第三种折射率材料形成。所述第三种折射率材料为低折射率材料。所述第三种折射率材料的折射率小于所述第一种折射率材料的折射率。所述反射层300具有通孔301。所述通孔301暴露所述薄膜晶体管层200。\n\n[0037]请参阅图4，图4为本申请提供的反射层的反射曲线示意图。当光线经过两种不同折射率材料形成的分层的界面时，反射层300将对光线进行反射，由于各层反射回来的光因相位角的改变而进行建设性干涉，然后互相结合在一起，得到强烈的反射光，提高了迷你发光二极管的光利用率，并降低功率的消耗，进而提高了显示面板的性能。在波长400纳米-690纳米之间，所述反射层300对光线的反射达到75％以上，更甚者，在530纳米-590纳米之间，所述反射层300对光线的反射达到80％以上。所述第一分层310除对光线具有反射作用外，还用于保护所述反射层300的结构。\n\n[0038]在另一实施例中，所述第一种折射率材料的折射率为1.90-2.11。所述第二种折射率材料的折射率为2.2-4.6。所述第三种折射率材料的折射率为1.35-1.55。\n\n[0039]在另一实施例中，所述第一种折射率材料为SiNx。所述第二种折射率材料包括SiO2和MgF中的一种或两种组合。所述第三种折射率材料包括ZnS、TiO2和Si中的一种或几种组合。\n\n[0040]在另一实施例中，所述第一分层310的厚度为45纳米-54纳米。所述第二分层320和所述第四分层340的厚度为15纳米-25纳米。所述第三分层330的厚度为100纳米-130纳米。\n\n[0041]请参阅图5，图5为本申请所提供的另一种反射层结构及其光线反射路径示意图。在另一实施例中，所述第二分层320、所述第三分层330和所述第四分层340形成所述分布式布拉格反射层300。\n\n[0042]所述迷你发光二极管500底部设置有一金属膏层400。将带有所述金属膏层400的迷你发光二极管500设置于所述通孔301中以电连接所述薄膜晶体管层200。所述金属层400的材料包括Sn、In、Bi、Cu、Al和Mo中的一种或几种组合。在本实施例中，所述金属膏层500为锡膏层。\n\n[0043]在本申请中，将迷你发光二极管设置于一金属膏层上，因金属膏层具有流动性和粘附性，之后将设置于迷你发光二极管的金属膏层固化，进而将迷你发光二极管固定于金属膏层上，将带有金属膏层的迷你发光二极管设置于通孔中，进而将所述迷你发光二极管固定于所述薄膜晶体管层上，避免迷你发光二极管在制备或使用的过程中丢失，影响了显示面板的性能。\n\n[0044]本申请提供一种显示面板，在所述显示面板中，将所述反射层的结构设置成由高折射率材料和低折射率材料形成，所述由低折射率形成的分层位于所述由高折射率材料形成的分层之间，使得所述反射层的结构呈现为高-低-高结构，当光线经过反射层时，由于各层反射回来的光因相位角的改变而进行建设性干涉，然后互相结合在一起，得到强烈的反射光，提高了反射层的反射率，提高了迷你发光二极管的光利用率，并降低了功耗，且，所述反射层反射带宽大，可作为白色背光的反射层，同时，所述反射层结构简单，与薄膜晶体管制程兼容性好，成本低，进而提高了显示面板的性能，并降低了显示面板的制备成本。\n\n[0045]请参阅图6，图6为本申请提供的显示面板的制备方法的流程剖视图。本申请还提供一种显示面板10的制备方法，包括：\n\n[0046]11、在所述基板100上形成薄膜晶体管层200。\n\n[0047]提供一基板100。所述基板100可以为玻璃基板。在所述基板100上形成薄膜晶体管层200。所述薄膜晶体管层200包括薄膜晶体管210，所述薄膜晶体管210包括栅极201、第一保护层202、栅极绝缘203、有源层204、源极205、漏极206和第二保护层207。所述第一保护层202覆盖所述栅极201。所述栅极201的材料包括Mo、Al、Ti、In和Ga中的一种或几种组合。所述栅极绝缘层203设置于所述第一保护层202上。所述栅极绝缘层203的材料包括Al2O3、SiOx和SiNX中的一种或几种组合。所述有源层204设置于所述栅极绝缘层203上。所述有源层204的材料包括非晶硅。所述源极205设置于所述栅极绝缘层203的一端及所述有源层204的一端。所述漏极206设置于所述栅极绝缘层203的另一端及所述有源层204的另一端。所述源极205与所述漏极206相互绝缘。所述第二保护层207覆盖所述源极205、所述漏极206及所述栅极绝缘层203。所述第二保护层207用于保护所述薄膜晶体管层200的结构，避免其他结构或水氧对所述薄膜晶体管210中其他结构的影响。所述薄膜晶体管210除图2中所示出的结构外，还包括其他结构，此处不一一列出。\n\n[0048]12、在所述薄膜晶体管层200上形成一第一分层310。\n\n[0049]在所述薄膜晶体管层200上沉积第一种折射率材料，形成第一分层310。所述第一种折射率材料为高折射率材料。\n\n[0050]在另一实施例中，所述第一种折射率材料的折射率为1.90-2.11。\n\n[0051]在另一实施例中，所述第一种折射率材料为SiNx。\n\n[0052]在另一实施例中，所述第一分层的厚度为45纳米-54纳米。\n\n[0053]13、在所述第一分层310上依次交替层叠设置第二分层320和第三分层330。\n\n[0054]请参阅图4，图4为本申请所提供的反射层结构及其光线反射路径示意图。在所述第一分层310上交替层叠设置第二种折射率材料和第三种折射率材料形成若干第二分层320和若干第三分层330。具体地，在所述第一分层310上一层叠设置第二种折射率材料、第三种折射率材料和第二种折射率材料，形成第二分层320、第三分层330和第四分层340。所述第一分层310、第二分层320、第三分层330和所述第四分层形成反射层300。所述反射层300为分布式布拉格反射层，所述分布式布拉格反射层是当光经过不同介质时在界面的地方会反射的一种结构。所述第二分层320与所述第四分层340的材料为同一材料。所述第二种折射率材料为高折射率材料。所述第三种折射率材料为低折射率材料。所述第一种折射率材料的折射率小于所述第二种折射率材料的折射率。所述第三种折射率材料的折射率小于所述第一种折射率材料的折射率。\n\n[0055]在另一实施例中，所述第二种折射率材料的折射率为2.2-4.6。所述第三种折射率材料的折射率为1.35-1.55。\n\n[0056]在另一实施例中，所述第二种折射率材料包括SiO2和MgF中的一种或两种组合。所述第三种折射率材料包括ZnS、TiO2和Si中的一种或几种组合。\n\n[0057]在另一实施例中，所述第二分层320和所述第四分层340的厚度为15纳米-25纳米。所述第三分层330的厚度为100纳米-130纳米。\n\n[0058]在本申请中，所述显示面板的反射层的结构采用高折射率材料和低折射率材料形成，呈现出的分层结构为由高折射率材料形成的分层、由低折射率材料形成的分层及由高折射率材料形成的分层，所述由低折射率材料形成的分层被设置在由所述高折射率材料形成的分层之间，当光线经过反射层时，光线经过不同折射率材料形成的相邻分层时，光线将发生反射，由于各层反射回来的光因相位角的改变而进行建设性干涉，然后互相结合在一起，得到强烈的反射光，反射层对光的反射率提高，将所述迷你发光二极管背光与所述反射层结构结合，进而提高了迷你发光二极管的光利用率，并降低了功耗，且，所述反射层反射带宽大，可作为白色背光的反射层，同时，所述反射层结构简单，与薄膜晶体管制程兼容性好，制备成本低，易于实现，进而提高了显示面板的性能，并降低了显示面板的制备成本。\n\n[0059]请参阅图5，图5为本申请所提供的另一种反射层结构及其光线反射路径示意图。在另一实施例中，所述第二分层320、所述第三分层330和所述第四分层340形成所述分布式布拉格反射层300。\n\n[0060]14、对所述反射层300进行蚀刻形成通孔301，所述通孔301暴露所述薄膜晶体管层200。\n\n[0061]对所述反射层300进行干法蚀刻，形成所述通孔301。对所述反射层300蚀刻成所述通孔301所采用的方法不限制，可根据具体需求采取相应的蚀刻方法。\n\n[0062]15、在所述通孔301中设置迷你发光二极管500，以电连接所述薄膜晶体管层200。\n\n[0063]所述迷你发光二极管500的底部设置有一金属膏层400。将带有所述金属膏层400的迷你发光二极管500设置于所述通孔301中。所述金属膏层400的材料包括Sn、In、Bi、Cu、Al和Mo中的一种或几种组合。在本实施例中，所述金属膏层400为锡膏层。\n\n[0064]在本申请中，将迷你发光二极管设置于一金属膏层上，因金属膏层具有流动性和粘附性，之后将设置于迷你发光二极管的金属膏层固化，进而将迷你发光二极管固定于金属膏层上，将带有金属膏层的迷你发光二极管设置于通孔中，进而将所述迷你发光二极管固定于所述薄膜晶体管层上，避免迷你发光二极管在制备或使用的过程中丢失，影响了显示面板的性能。\n\n[0065]本申请提供一种显示面板及其制备方法，在所述显示面板的制备方法中，所述反射层的结构采用高折射率材料和低折射率材料形成，呈现出的分层结构为由高折射率材料形成的分层、由低折射率材料形成的分层、由高折射率材料形成的分层，所述由低折射率材料形成的分层被设置于由所述高折射率材料形成的分层之间，当光线经过反射层时，光线会在两种不同折射率分层的界面上发生反射，且各层反射回来的光因相位角的改变而进行建设性干涉，然后互相结合在一起，得到强烈的反射光，反射层的反射率提高，所述反射层结构简单，与薄膜晶体管制程兼容性好，制备成本低，易于实现，提高了显示面板的制备效率，并降低了显示面板的制备成本。\n\n[0066]以上对本申请实施方式提供了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施方式的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种显示面板及其制备方法。\n\n背景技术\n\n[0002]在现有技术中，作为液晶显示器的背光，为提高发光二极管的光利用率，通常采用将反射膜贴在发光二极管基板上，使其将发光二极管出射的光及其上方扩散膜反射回来的光重新反射到液晶显示器中，但，贴附的反射膜的厚度比较厚，影响发光二极管的光利用率，进而成本增高，并影响显示面板的性能；反射膜的制备工艺与常规晶体管制程不兼容，使得成本增高，并使得产品的生产周期增长。\n\n发明内容\n\n[0003]本申请提供一种显示面板及其制备方法，以提高显示面板的性能。\n\n[0004]一种显示面板，包括：\n\n[0005]基板；\n\n[0006]薄膜晶体管层，所述薄膜晶体管层设置于所述基板上；\n\n[0007]反射层，所述反射层由一第一分层、若干第二分层和若干第三分层组成，所述第一分层设置于所述薄膜晶体管层上，若干所述第二分层和若干所述第三分层依次交替层叠设置于所述第一分层上，所述第一分层采用第一种折射率材料形成，若干所述第二分层采用第二种折射率材料形成，若干所述第三分层采用第三种折射率材料形成，所述反射层具有通孔，所述通孔暴露所述薄膜晶体管层；以及\n\n[0008]迷你发光二极管，所述迷你发光二极管设置于所述通孔中，以电连接所述薄膜晶体管层。\n\n[0009]在本申请所提供的显示面板中，所述第一种折射率的折射率材料的折射率小于所述第二种折射率材料的折射率，所述第三种折射率材料的折射率小于所述第一种折射率材料的折射率。\n\n[0010]在本申请所提供的显示面板中，所述第一种折射率材料的折射率为1.90-2.11，所述第二种折射率材料的折射率为2.2-4.6，所述第三种折射率材料的折射率为1.35-1.55。\n\n[0011]在本申请所提供的显示面板中，所述第一分层的厚度为45纳米-54纳米，所述第二分层的厚度为15纳米-25纳米，所述第三分层的厚度为100纳米-130纳米。\n\n[0012]在本申请所提供的显示面板中，所述第一种折射率材料为SiNx，所述第二种折射率材料包括SiO2和MgF中的一种或两种组合，所述第三种折射率材料包括ZnS、TiO2和Si中的一种或几种组合。\n\n[0013]本申请提供一种显示面板的制备方法，包括：\n\n[0014]基板；\n\n[0015]在所述基板上形成薄膜晶体管层；\n\n[0016]在所述薄膜晶体管层上设置第一种折射率材料，形成第一分层；\n\n[0017]在所述第一分层上依次交替层叠设置第二种折射率材料和第三种折射率材料形成若干第二分层和若干第三分层，所述第一分层、若干所述第二分层和所述第三分层成反射层；\n\n[0018]对所述反射层进行蚀刻形成通孔，所述通孔暴露所述薄膜晶体管层；\n\n[0019]在所述通孔中设置迷你发光二极管，以电连接所述薄膜晶体管层。\n\n[0020]在本申请所提供显示面板的制备方法中，所述第一种折射率材料的折射率小于所述第二种折射率材料的折射率，所述第三种折射率材料的折射率小于所述第一种折射率材料的折射率。\n\n[0021]在本申请所提供显示面板的制备方法中，所述第一种折射率材料的折射率为1.90-2.11，所述第二种折射率材料的折射率为2.2-4.6，所述第三种折射率材料的折射率为1.35-1.55。\n\n[0022]在本申请所提供显示面板的制备方法中，所述第一分层的厚度为45纳米-54纳米，所述第二分层的厚度为15纳米-25纳米，所述第三分层的厚度为100纳米-130纳米。\n\n[0023]在本申请所提供显示面板的制备方法中，所述第一种折射率材料为SiNx，所述第二种折射率材料包括SiO2和MgF中的一种或两种组合，所述第三种折射率材料包括ZnS、TiO2和Si中的一种或几种组合。\n\n[0024]本申请提供一种显示面板及其制备方法，所述显示面板包括基板、薄膜晶体管层、反射层和迷你发光二极管，所述薄膜晶体管层设置于所述基板上，所述反射层由一第一分层、若干第二分层和若干第三分层组成，所述第一分层设置于所述薄膜晶体管层上，若干所述第二分层和若干所述第三分层依次交替层叠设置于所述第一分层上，所述第一分层采用第一种折射率材料形成，若干所述第二分层采用第二种折射率材料形成，若干所述第三分层采用第三种折射率材料形成，所述反射层具有通孔，所述通孔暴露所述薄膜晶体管层，所述迷你发光二极管设置于所述通孔中，以电连接所述薄膜晶体管层。在本申请中，若干所述第二分层和若干所述第三分层交替层叠设置于所述第一分层上形成反射层，若干所述第一分层由第一种折射率材料形成，若干所述第二分层由第二种折射率材料形成，若干所述第三分层由第三种折射率材料形成，所述反射层采用高折射率分层设置在低折射率分层两侧，提高了迷你发光二极管的光利用率，并降低了功率消耗，进而提高了显示面板的性能。\n\n附图说明\n\n[0025]为了更清楚地说明本申请中的技术方案，下面将对实施方式描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施方式，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0026]图1为本申请所提供的显示面板的剖视图。\n\n[0027]图2为本申请所提供的薄膜晶体管的结构剖视图。\n\n[0028]图3为本申请所提供的反射层结构及其光线反射路径示意图。\n\n[0029]图4为本申请提供的反射层的反射曲线示意图。\n\n[0030]图5为本申请所提供的另一种反射层结构及其光线反射路径示意图。\n\n[0031]图6为本申请提供的显示面板的制备方法的流程剖视图。\n\n具体实施方式\n\n[0032]下面将结合本申请实施方式中的附图，对本申请中的技术方案进行清楚、完整地描述。显然，所描述的实施方式仅仅是本申请一部分实施方式，而不是全部的实施方式。基于本申请中的实施方式，本领域技术人员在没有做出创造性劳动前提下所获得的所有其他实施方式，都属于本申请保护的范围。\n\n[0033]本申请提供一种显示面板。请参阅图1，图1为本申请所提供的显示面板的剖视图。所述显示面板10包括基板100、薄膜晶体管层200、反射层300和迷你发光二极管400。\n\n[0034]基板100，所述基板100可以为玻璃基板。\n\n[0035]请参阅图2，图2为本申请所提供的薄膜晶体管的结构剖视图。所述薄膜晶体管层200设置于所述基板100上。所述薄膜晶体管层200包括薄膜晶体管210，所述薄膜晶体管210包括栅极201、第一保护层202、栅极绝缘203、有源层204、源极205、漏极206和第二保护层207。所述第一保护层202覆盖所述栅极201。所述栅极201的材料包括Mo、Al、Ti、In和Ga中的一种或几种组合。所述栅极绝缘层203设置于所述第一保护层202上。所述栅极绝缘层203的材料包括Al2O3、SiOx和SiNX中的一种或几种组合。所述有源层设204置于所述栅极绝缘层203上。所述有源层204的材料包括非晶硅。所述源极205设置于所述栅极绝缘层203的一端及所述有源层204的一端。所述漏极206设置于所述栅极绝缘层203的另一端及所述有源层204的另一端。所述源极205与所述漏极206相互绝缘。所述第二保护层207覆盖所述源极205、所述漏极206及所述栅极绝缘层203。所述第二保护层207用于保护所述薄膜晶体管210中的结构，避免其他结构或水氧对所述薄膜晶体管层200的影响。所述薄膜晶体管210除图2中所示出的结构外，还包括其他结构，此处不一一列出。\n\n[0036]请参阅图3，图3为本申请所提供的反射层结构及其光线反射路径示意图。反射层300，所述反射层300设置于所述薄膜晶体管层200上。所述反射层300包括一第一分层310、若干第二分层320和若干第三分层330。所述第一分层310设置于所述薄膜晶体管层200上。若干所述第二分层320和若干所述第三分层303交替层叠设置于所述第一分层310上。在本实施例中，所述反射层具有4层分层的结构。即，在所述第一分层上由两种不同折射率的材料依次交替层叠形成反射层。具体地，在所述第一分层310上依次层叠设置第二分层320、第三分层330和第四分层340。所述第一分层310、所述第二分层320、所述第三分层330和所述第四分层340组成反射层300。所述反射层300为分布式布拉格反射层。所述第一分层310采用第一种折射率材料形成。所述第一种折射材料为高折射率材料。所述第二分层320和所述第四分层340采用第二种折射率材料形成。所述第二种折射率材料为高折射率材料。所述第二种折射率的折射率材料大于所述第一种折射率材料的折射率。所述第三分层330采用第三种折射率材料形成。所述第三种折射率材料为低折射率材料。所述第三种折射率材料的折射率小于所述第一种折射率材料的折射率。所述反射层300具有通孔301。所述通孔301暴露所述薄膜晶体管层200。\n\n[0037]请参阅图4，图4为本申请提供的反射层的反射曲线示意图。当光线经过两种不同折射率材料形成的分层的界面时，反射层300将对光线进行反射，由于各层反射回来的光因相位角的改变而进行建设性干涉，然后互相结合在一起，得到强烈的反射光，提高了迷你发光二极管的光利用率，并降低功率的消耗，进而提高了显示面板的性能。在波长400纳米-690纳米之间，所述反射层300对光线的反射达到75％以上，更甚者，在530纳米-590纳米之间，所述反射层300对光线的反射达到80％以上。所述第一分层310除对光线具有反射作用外，还用于保护所述反射层300的结构。\n\n[0038]在另一实施例中，所述第一种折射率材料的折射率为1.90-2.11。所述第二种折射率材料的折射率为2.2-4.6。所述第三种折射率材料的折射率为1.35-1.55。\n\n[0039]在另一实施例中，所述第一种折射率材料为SiNx。所述第二种折射率材料包括SiO2和MgF中的一种或两种组合。所述第三种折射率材料包括ZnS、TiO2和Si中的一种或几种组合。\n\n[0040]在另一实施例中，所述第一分层310的厚度为45纳米-54纳米。所述第二分层320和所述第四分层340的厚度为15纳米-25纳米。所述第三分层330的厚度为100纳米-130纳米。\n\n[0041]请参阅图5，图5为本申请所提供的另一种反射层结构及其光线反射路径示意图。在另一实施例中，所述第二分层320、所述第三分层330和所述第四分层340形成所述分布式布拉格反射层300。\n\n[0042]所述迷你发光二极管500底部设置有一金属膏层400。将带有所述金属膏层400的迷你发光二极管500设置于所述通孔301中以电连接所述薄膜晶体管层200。所述金属层400的材料包括Sn、In、Bi、Cu、Al和Mo中的一种或几种组合。在本实施例中，所述金属膏层500为锡膏层。\n\n[0043]在本申请中，将迷你发光二极管设置于一金属膏层上，因金属膏层具有流动性和粘附性，之后将设置于迷你发光二极管的金属膏层固化，进而将迷你发光二极管固定于金属膏层上，将带有金属膏层的迷你发光二极管设置于通孔中，进而将所述迷你发光二极管固定于所述薄膜晶体管层上，避免迷你发光二极管在制备或使用的过程中丢失，影响了显示面板的性能。\n\n[0044]本申请提供一种显示面板，在所述显示面板中，将所述反射层的结构设置成由高折射率材料和低折射率材料形成，所述由低折射率形成的分层位于所述由高折射率材料形成的分层之间，使得所述反射层的结构呈现为高-低-高结构，当光线经过反射层时，由于各层反射回来的光因相位角的改变而进行建设性干涉，然后互相结合在一起，得到强烈的反射光，提高了反射层的反射率，提高了迷你发光二极管的光利用率，并降低了功耗，且，所述反射层反射带宽大，可作为白色背光的反射层，同时，所述反射层结构简单，与薄膜晶体管制程兼容性好，成本低，进而提高了显示面板的性能，并降低了显示面板的制备成本。\n\n[0045]请参阅图6，图6为本申请提供的显示面板的制备方法的流程剖视图。本申请还提供一种显示面板10的制备方法，包括：\n\n[0046]11、在所述基板100上形成薄膜晶体管层200。\n\n[0047]提供一基板100。所述基板100可以为玻璃基板。在所述基板100上形成薄膜晶体管层200。所述薄膜晶体管层200包括薄膜晶体管210，所述薄膜晶体管210包括栅极201、第一保护层202、栅极绝缘203、有源层204、源极205、漏极206和第二保护层207。所述第一保护层202覆盖所述栅极201。所述栅极201的材料包括Mo、Al、Ti、In和Ga中的一种或几种组合。所述栅极绝缘层203设置于所述第一保护层202上。所述栅极绝缘层203的材料包括Al2O3、SiOx和SiNX中的一种或几种组合。所述有源层204设置于所述栅极绝缘层203上。所述有源层204的材料包括非晶硅。所述源极205设置于所述栅极绝缘层203的一端及所述有源层204的一端。所述漏极206设置于所述栅极绝缘层203的另一端及所述有源层204的另一端。所述源极205与所述漏极206相互绝缘。所述第二保护层207覆盖所述源极205、所述漏极206及所述栅极绝缘层203。所述第二保护层207用于保护所述薄膜晶体管层200的结构，避免其他结构或水氧对所述薄膜晶体管210中其他结构的影响。所述薄膜晶体管210除图2中所示出的结构外，还包括其他结构，此处不一一列出。\n\n[0048]12、在所述薄膜晶体管层200上形成一第一分层310。\n\n[0049]在所述薄膜晶体管层200上沉积第一种折射率材料，形成第一分层310。所述第一种折射率材料为高折射率材料。\n\n[0050]在另一实施例中，所述第一种折射率材料的折射率为1.90-2.11。\n\n[0051]在另一实施例中，所述第一种折射率材料为SiNx。\n\n[0052]在另一实施例中，所述第一分层的厚度为45纳米-54纳米。\n\n[0053]13、在所述第一分层310上依次交替层叠设置第二分层320和第三分层330。\n\n[0054]请参阅图4，图4为本申请所提供的反射层结构及其光线反射路径示意图。在所述第一分层310上交替层叠设置第二种折射率材料和第三种折射率材料形成若干第二分层320和若干第三分层330。具体地，在所述第一分层310上一层叠设置第二种折射率材料、第三种折射率材料和第二种折射率材料，形成第二分层320、第三分层330和第四分层340。所述第一分层310、第二分层320、第三分层330和所述第四分层形成反射层300。所述反射层300为分布式布拉格反射层，所述分布式布拉格反射层是当光经过不同介质时在界面的地方会反射的一种结构。所述第二分层320与所述第四分层340的材料为同一材料。所述第二种折射率材料为高折射率材料。所述第三种折射率材料为低折射率材料。所述第一种折射率材料的折射率小于所述第二种折射率材料的折射率。所述第三种折射率材料的折射率小于所述第一种折射率材料的折射率。\n\n[0055]在另一实施例中，所述第二种折射率材料的折射率为2.2-4.6。所述第三种折射率材料的折射率为1.35-1.55。\n\n[0056]在另一实施例中，所述第二种折射率材料包括SiO2和MgF中的一种或两种组合。所述第三种折射率材料包括ZnS、TiO2和Si中的一种或几种组合。\n\n[0057]在另一实施例中，所述第二分层320和所述第四分层340的厚度为15纳米-25纳米。所述第三分层330的厚度为100纳米-130纳米。\n\n[0058]在本申请中，所述显示面板的反射层的结构采用高折射率材料和低折射率材料形成，呈现出的分层结构为由高折射率材料形成的分层、由低折射率材料形成的分层及由高折射率材料形成的分层，所述由低折射率材料形成的分层被设置在由所述高折射率材料形成的分层之间，当光线经过反射层时，光线经过不同折射率材料形成的相邻分层时，光线将发生反射，由于各层反射回来的光因相位角的改变而进行建设性干涉，然后互相结合在一起，得到强烈的反射光，反射层对光的反射率提高，将所述迷你发光二极管背光与所述反射层结构结合，进而提高了迷你发光二极管的光利用率，并降低了功耗，且，所述反射层反射带宽大，可作为白色背光的反射层，同时，所述反射层结构简单，与薄膜晶体管制程兼容性好，制备成本低，易于实现，进而提高了显示面板的性能，并降低了显示面板的制备成本。\n\n[0059]请参阅图5，图5为本申请所提供的另一种反射层结构及其光线反射路径示意图。在另一实施例中，所述第二分层320、所述第三分层330和所述第四分层340形成所述分布式布拉格反射层300。\n\n[0060]14、对所述反射层300进行蚀刻形成通孔301，所述通孔301暴露所述薄膜晶体管层200。\n\n[0061]对所述反射层300进行干法蚀刻，形成所述通孔301。对所述反射层300蚀刻成所述通孔301所采用的方法不限制，可根据具体需求采取相应的蚀刻方法。\n\n[0062]15、在所述通孔301中设置迷你发光二极管500，以电连接所述薄膜晶体管层200。\n\n[0063]所述迷你发光二极管500的底部设置有一金属膏层400。将带有所述金属膏层400的迷你发光二极管500设置于所述通孔301中。所述金属膏层400的材料包括Sn、In、Bi、Cu、Al和Mo中的一种或几种组合。在本实施例中，所述金属膏层400为锡膏层。\n\n[0064]在本申请中，将迷你发光二极管设置于一金属膏层上，因金属膏层具有流动性和粘附性，之后将设置于迷你发光二极管的金属膏层固化，进而将迷你发光二极管固定于金属膏层上，将带有金属膏层的迷你发光二极管设置于通孔中，进而将所述迷你发光二极管固定于所述薄膜晶体管层上，避免迷你发光二极管在制备或使用的过程中丢失，影响了显示面板的性能。\n\n[0065]本申请提供一种显示面板及其制备方法，在所述显示面板的制备方法中，所述反射层的结构采用高折射率材料和低折射率材料形成，呈现出的分层结构为由高折射率材料形成的分层、由低折射率材料形成的分层、由高折射率材料形成的分层，所述由低折射率材料形成的分层被设置于由所述高折射率材料形成的分层之间，当光线经过反射层时，光线会在两种不同折射率分层的界面上发生反射，且各层反射回来的光因相位角的改变而进行建设性干涉，然后互相结合在一起，得到强烈的反射光，反射层的反射率提高，所述反射层结构简单，与薄膜晶体管制程兼容性好，制备成本低，易于实现，提高了显示面板的制备效率，并降低了显示面板的制备成本。\n\n[0066]以上对本申请实施方式提供了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施方式的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10824, 23878, '技术领域\n\n[0001]本申请涉及显示领域，特别是涉及一种显示面板的制作方法。\n\n背景技术\n\n[0002]Micro LED显示装置相比OLED显示装置具有可靠性高，色域高，亮度高，透明度高，PPI(Pixels Per Inch，像素密度)高；且封装要求低，更容易实现柔性及无缝拼接显示，是未来极具有发展潜力的未来显示装置。\n\n[0003]另一方面，Micro LED芯片的高度较高，使得Micro LED显示装置的侧向出光十分严重；若采用传统的顶发射型Micro LED，将导致显示面板发生串扰，对显示器的对比度、色纯度等都将造成严重影响；进一步地，在上下基板对组的过程中，真空压力可能压碎MicroLED芯片，使其失效，影响整体显示效果。\n\n[0004]因此，现有的micro LED显示装置的技术中，还存在着micro LED显示面板的由于Micro LED芯片的高度过高，使得显示面板在显示时容易发生串扰，影响显示面板的显示质量的问题，急需改进。\n\n发明内容\n\n[0005]本申请涉及一种显示面板及其制作方法，用于解决现有技术中存在着显示面板的由于芯片的高度过高，使得显示面板在显示时容易发生串扰，影响显示面板的显示质量的问题。\n\n[0006]为解决上述问题，本申请提供的技术方案如下：\n\n[0007]本申请提供的一种显示面板，所述显示面板包括：第一基板；\n\n[0008]第二基板，正对于所述第一基板进行设置；\n\n[0009]驱动电路，相对所述第一基板，靠近所述第二基板一侧进行设置；\n\n[0010]色阻层，正对于所述驱动电路，靠近所述第一基板一侧进行设置；\n\n[0011]所述色阻层包括彩色色阻层和彩色量子点层，且所述驱动电路为底发射型发光二极管驱动电路。\n\n[0012]根据本申请提供的一实施例，所述驱动电路包括蓝色微型发光二极管层以及设置在所述蓝色微型发光二极管层四周的胶层。\n\n[0013]根据本申请提供的一实施例，所述胶层为白胶。\n\n[0014]根据本申请提供的一实施例，所述白胶的厚度大于所述蓝色微型发光二极管层的厚度，所述蓝色微型发光二极管层具有一定的预设厚度。\n\n[0015]根据本申请提供的一实施例，所述蓝色微型发光二极管层的预设厚度为：90-190um。\n\n[0016]根据本申请提供的一实施例，所述彩色色阻层分为：红色色阻层、绿色色阻层和透明色阻层，所述彩色量子点层包括：红色量子点区域、绿色量子点区域和透明区域；各种颜色的所述彩色色阻层正对于所述蓝色微型发光二极管层，间隔设置。\n\n[0017]根据本申请提供的一实施例，所述红色色阻层正对于所述红色量子点区域设置，所述绿色色阻层正对于所述绿色量子点区域设置，所述透明色阻层正对于所述透明区域设置。\n\n[0018]根据本申请提供的一实施例，所述驱动电路与所述第二基板之间还设置有聚酰亚胺薄膜和薄膜晶体管层，所述薄膜晶体管层电性连接所述驱动电路，所述聚酰亚胺薄膜的厚度小于所述蓝色微型发光二极管层，且所述聚酰亚胺薄膜具有一定的预设厚度。\n\n[0019]根据本申请提供的一实施例，所述聚酰亚胺薄膜的厚度小于所述蓝色微型发光二极管层的厚度，所述聚酰亚胺薄膜的预设厚度为：10-19um。\n\n[0020]本申请还提供一种显示面板的制作方法，该方法包括：背光基板的制作和彩膜基板的制作；首先，所述背光基板的制作步骤为：\n\n[0021]S10，提供第三基板，在所述第三基板一侧沉积聚酰亚胺薄膜；\n\n[0022]S20，在所述聚酰亚胺薄膜背离所述第三基板一侧形成薄膜晶体管层；\n\n[0023]S30，在所述薄膜晶体管层背离所述聚酰亚胺薄膜一侧形成蓝色微型发光二极管层；\n\n[0024]S40，在所述蓝色微型发光二极管背离所述薄膜晶体管层的一侧形成所述第二基板；\n\n[0025]S50，采用激光剥离的方法剥离所述第三基板；\n\n[0026]然后，所述彩膜基板的制作步骤为：\n\n[0027]S60，在所述第一基板的一侧制作黑色矩阵，分隔开各个色阻层；\n\n[0028]S70，采用黄光制程制作红色色阻层、绿色色阻层和透明色阻层；\n\n[0029]S80，采用化学气相沉积法在彩色色阻层的一侧沉积绝缘层；\n\n[0030]S90，采用黄光制程在所述绝缘层背离所述彩色色阻层的一侧形成黑色像素限定层，所述黑色像素限定层正对于所述黑色矩阵进行设置；\n\n[0031]S100，在所述黑色像素限定层间隔开的各个区域内间隔注入红色量子点和绿色量子点；\n\n[0032]最后，将所述背光基板与所述彩膜基板进行组装：\n\n[0033]S110，将所述聚酰亚胺薄膜一侧与所述彩色量子点层一侧进行对组安装。\n\n[0034]与现有技术相比，本申请提供的一种显示面板及其制作方法具有的有益效果为：\n\n[0035]1.首先，本申请所提供的显示面板，所述蓝色微型发光二极管层具有一定的预设厚度，所述蓝色微型发光二极管层的预设厚度为90-190um，避免了芯片高度过高，在上下基板对组的过程中压力压碎所述蓝色微型发光二极管层的可能；\n\n[0036]2.其次，本申请所提供的显示面板，所述蓝色微型发光二极管层的四周设置有白胶，所述白胶包围所述蓝色微型发光二极管层，既可以保护所述蓝色微型发光二极管层，避免了所述蓝色微型发光二极管层在制作过程中受到伤害；所述白胶还可以对所述蓝色微型发光二极管层所发出的光进行反射，使得所有的光线聚拢在所述显示面板底发射方向，提高了光线的利用率、亮度和对比度；\n\n[0037]3.进一步地，所述白胶的厚度高于所述蓝色微型发光二极管层的厚度，在上下基板进行对组的过程中，还可以对所述蓝色微型发光二极管的上下端面进行保护，避免了所述蓝色微型发光二极管受到压力的作用，被压碎或是破裂，影响显示质量；\n\n[0038]4.最后，所述色阻层包括彩色色阻层和彩色量子点层，所述彩色色阻层分为：红色色阻层、绿色色阻层和透明色阻层，所述彩色量子点层包括：红色量子点区域、绿色量子点区域和透明区域；各种颜色的所述色阻层正对于所述蓝色微型发光二极管层，由所述黑色矩阵间隔开进行设置，避免了所述显示面板发生串扰，影响显示面板的显示质量，也进一步提高了红色子像素、绿色子像素以及蓝色子像素的亮度和对比度。\n\n附图说明\n\n[0039]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0040]图1为本申请实施例提供的显示面板的结构示意图。\n\n[0041]图1A-1M为本申请实施例提供的显示面板的制作工艺图。\n\n[0042]图2为本申请实施例提供的显示面板制作方法的流程示意图。\n\n具体实施方式\n\n[0043]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0044]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0045]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0046]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0047]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0048]本申请提供一种显示面板及其制作方法，具体参阅图1-图2。\n\n[0049]现有的micro LED显示面板中Micro LED芯片的高度较高，使得Micro LED显示装置的侧向出光十分严重；若采用传统的顶发射型micro LED，将导致显示面板发生串扰，对显示器的对比度、色纯度等都将造成严重影响，进而影响显示面板的显示质量的问题。因此，本申请特提出一种micro LED显示面板及其制作方法。\n\n[0050]参阅图1，本申请提供的一种显示面板的结构示意图，所述显示面板包括：\n\n[0051]第一基板8；\n\n[0052]第二基板1，正对于所述第一基板8进行设置；\n\n[0053]驱动电路，相对所述第一基板8，靠近所述第二基板1一侧进行设置；\n\n[0054]色阻层，正对于所述驱动电路，靠近所述第一基板8一侧进行设置；\n\n[0055]所述色阻层包括彩色色阻层7和彩色量子点层5，且所述驱动电路为底发射型发光二极管驱动电路。进一步地，所述彩色量子点层5内设置量子点或是散射颗粒。\n\n[0056]在本申请的一种实施例中，所述显示面板为Micro LED显示面板，是LED微缩化和矩阵化技术，简单来说，就是将LED背光源进行薄膜化、微小化、阵列化，可以让LED单元小于100微米，与OLED一样能够实现每个图元单独定址，单独驱动发光(自发光)；在本申请的另一种实施例中，所述显示面板为Mini LED(次毫米发光二极管)显示面板，晶粒尺寸在50微米以上，250微米以下的LED，Mini LED是介于传统LED与Micro LED之间，为传统LED背光基础上的改良版本。\n\n[0057]在本申请的一种实施例中，所述驱动电路包括蓝色微型发光二极管层、以及设置在所述蓝色微型发光二极管41四周的胶层42，所述胶层42为白胶。\n\n[0058]进一步地，所述白胶的厚度大于所述蓝色微型发光二极管41的厚度，以使得所述白胶将所述蓝色微型发光二极管41完全包住，一方面所述白胶可以保护所述蓝色微型发光二极管41，避免所述蓝色微型发光二极管41的表面在制作过程中受到破坏，影响所述显示面板的显示质量；另一方面，所述白胶将所述蓝色微型发光二极管41所发出的光进行聚拢，使得所有的光线聚拢在所述显示面板底发射方向，提高了光线的利用率、亮度和对比度。\n\n[0059]进一步地，所述白胶的四周，除了靠近所述彩色量子点5的一侧(用于所述蓝色微型发光二极管出光的一侧)均可以再另行设置一层黑胶43，进一步将所述蓝色微型发光二极管41所发出的光线进行聚拢，防止光线的泄露，提高所述显示面板的光线亮度和对比度。\n\n[0060]进一步地，所述蓝色微型发光二极管41具有一定的预设厚度，所述蓝色微型发光二极管层的预设厚度为：90-190um。\n\n[0061]在本申请的一种实施例中，所述彩色色阻层7分为：红色色阻层(R)71、绿色色阻层(G)72和透明色阻层(T)73，各个所述彩色色阻层之间设置有黑色矩阵74将不同的所述彩色色阻层间隔开，避免不同的所述彩色色阻层7颜色的串扰；所述彩色量子点层5包括：红色量子点区域51、绿色量子点区域52和透明区域53；所述红色量子点区域51内注入红色量子点，所述绿色量子点区域52内注入绿色量子点，所述透明区域53内注入透明量子点；所述彩色量子点区域5由黑色像素限定层54所阻隔开，以使得所述彩色量子点层5能够分成多种颜色的量子点区域分别注入不同颜色的量子点，可以有效地利用光能，以及防止所述Micro LED量子点层中的像素间颜色的相互干扰，所述黑色像素限定层54与所述黑色矩阵74可以采用相同的材料或是不同的材料，所述黑色像素限定层54为了使各种不同颜色的彩色墨水能够打印到对应的区域内并形成相应的子像素的形状，在打印基板上需要设置所述黑色像素限定层54，将墨水打印到所述黑色像素限定层54限定的孔洞中，所述黑色像素限定层54与所述黑色矩阵74的共性都是为了遮光并隔绝不同颜色的色阻；各种颜色的所述彩色色阻层5正对于所述蓝色微型发光二极管41，间隔设置，即所述蓝色微型发光二极管41包括多个间隔设置的蓝色微型发光二极管，每个所述蓝色微型发光二极管正对于一个所述彩色色阻层7，所述彩色色阻层可以是红色色阻层71、绿色色阻层72或是透明色阻层73，这样集中了每个所述彩色色阻层7所对应区域的颜色，有利于提高各个所述彩色色阻层7区域的亮度和对比度。\n\n[0062]进一步地，所述彩色量子点层5也可以叫作色转换层，可以对所述蓝色微型发光二极管41发出的光的颜色进行转换，即当所述蓝色微型发光二极管41所发出的光经过所述红色量子点区域51时，变成红色的光，当所述蓝色微型发光二极管41所发出的光经过所述绿色量子点区域52时，变成绿色的光，当所述蓝色微型发光二极管41发出的光经过所述透明区域53时，直接发出蓝色的光，进而可以组成RGB子像素单元。\n\n[0063]进一步地，所述红色色阻层71正对于所述红色量子点区域51设置，所述绿色色阻层72正对于所述绿色量子点区域52设置，所述透明色阻层73正对于所述透明区域53设置。\n\n[0064]在本申请的一种实施例中，所述驱动电路与所述第二基板1之间还设置有聚酰亚胺薄膜2和薄膜晶体管层3，所述薄膜晶体管层3电性连接所述驱动电路，所述聚酰亚胺薄膜2的厚度小于所述蓝色微型发光二极管41，且所述聚酰亚胺薄膜2具有一定的预设厚度。进一步地，所述聚酰亚胺薄膜2的预设厚度为：10-19um。\n\n[0065]进一步地，所述第一基板8、所述第二基板1和所述第三基板9均可以是玻璃基板或是树脂基板。\n\n[0066]进一步地，所述驱动电路不仅可以是与薄膜晶体管配套的TFT驱动电路，还可以是CMOS驱动电路，当所述驱动电路为CMOS驱动电路时，所述第二基板采用与之配套的CMOS基板。\n\n[0067]参阅图1A-1M以及图2，本申请还提供一种显示面板的制作方法，该方法包括：背光基板的制作和彩膜基板的制作；首先，所述背光基板的制作步骤为：\n\n[0068]S10，提供第三基板9，在所述第三基板9一侧沉积聚酰亚胺薄膜2；所述第三基板9可以是玻璃基板也可以是树脂基板等，以用于支撑所述薄膜晶体管层3和所述驱动电路，还可以作为所述底发射型驱动电路与所述彩色量子点墨水之间的介质；因此，所述聚酰亚胺薄膜2具有一定的预设厚度，所述聚酰亚胺薄膜2的预设厚度为：10-19um，因此，降低了所述底发射型微型发光二极管驱动电路的厚度，避免了所述micro LED/Mini LED显示面板芯片高度过高，造成显示面板在显示时发生串扰的问题；\n\n[0069]S20，在所述聚酰亚胺薄膜2背离所述第三基板9一侧形成薄膜晶体管层3；所述薄膜晶体管层3电性连接所述蓝色微型发光二极管41，用于驱动所述蓝色微型发光二极管41；\n\n[0070]S30，在所述薄膜晶体管层3背离所述聚酰亚胺薄膜2一侧形成蓝色微型发光二极管层；所述蓝色微型发光二极管41发出蓝光，用于激发所述红色量子点和所述绿色量子点，分别形成红色子像素和绿色子像素，同时，在穿过所述透明区域时提供蓝色子像素，这样就可以形成多个RGB子像素单元；此外，所述蓝色微型发光二极管41的四周还设置有白胶42，所述白胶42对所述蓝色微型发光二极管41进行封装，一方面对所述蓝色微型发光二极管41的表面起到保护作用，避免所述蓝色微型发光二极管41在制作过程中受到伤害，另一方面，所述白胶42还可以将所述蓝色微型发光二极管41所发出的光进行聚拢，将所有的光线集中在所述蓝色微型发光二极管41的底反射方向，提高各个所述彩色量子点区域内的光线利用率、亮度和对比度；\n\n[0071]S40，在所述蓝色微型发光二极管41背离所述薄膜晶体管层3的一侧形成所述第二基板1；将所述白胶42背离所述薄膜晶体管层3的一侧进行磨平处理，再在其上形成所述第二基板1，当所述第三基板9被剥离后，作为所述驱动电路的支撑，以便进行后续的对组；\n\n[0072]S50，采用激光剥离的方法剥离所述第三基板9；\n\n[0073]然后，所述彩膜基板的制作步骤为：\n\n[0074]S60，在所述第一基板8的一侧制作黑色矩阵74，分隔开各个色阻层；防止各个所述子像素的颜色发生串扰；\n\n[0075]S70，采用黄光制程制作红色色阻层71、绿色色阻层72和透明色阻层73；分别使用红色光阻和绿色光阻的黄光制程制备所述红色色阻层71和所述绿色色阻层72，可有效减少背光基板中蓝光透过，提高显示器的色纯度和对比度；\n\n[0076]S80，采用化学气相沉积法在彩色色阻层的一侧沉积绝缘层6；所述绝缘层6为二氧化硅，所述二氧化硅层可防止所述黑色像素限定层54对下层光阻造成影响，也可以防止上下光阻层之间发生侵蚀，同时，还可以对所述红色色阻层71和所述绿色色阻层72与所述黑色矩阵74的搭接处(BM overlay)所形成的牛角地形能起到一定的平坦作用；\n\n[0077]S90，采用黄光制程在所述绝缘层背离所述彩色色阻层的一侧形成黑色像素限定层54，所述黑色像素限定层54正对于所述黑色矩阵74进行设置；\n\n[0078]S100，在所述黑色像素限定层54间隔开的各个区域内间隔注入红色量子点和绿色量子点；即在所述黑色像素限定层54所限定的各个区域内分别形成的所述红色量子点区域71、所述绿色量子点区域72和所述透明量子点区域73；\n\n[0079]最后，将所述背光基板与所述彩膜基板进行组装：\n\n[0080]S110，将所述聚酰亚胺薄膜2一侧与所述彩色量子点层7一侧进行对组安装。\n\n[0081]因此，本申请提供的一种显示面板及其制作方法具有的有益效果为：首先，本申请所提供的micro LED显示面板，所述蓝色微型发光二极管层具有一定的预设厚度，所述蓝色微型发光二极管层的预设厚度为90-190um，避免了micro LED/Mini LED芯片高度过高，在上下基板对组的过程中压力压碎所述蓝色微型发光二极管层的可能；其次，本申请所提供的显示面板，所述蓝色微型发光二极管层的四周设置有白胶，所述白胶包围所述蓝色微型发光二极管层，既可以保护所述蓝色微型发光二极管层，避免了所述蓝色微型发光二极管层在制作过程中受到伤害；所述白胶还可以对所述蓝色微型发光二极管层所发出的光进行反射，使得所有的光线聚拢在所述micro LED显示面板底发射方向，提高了光线的利用率、亮度和对比度；进一步地，所述白胶的厚度高于所述蓝色微型发光二极管层的厚度，在上下基板进行对组的过程中，还可以对所述蓝色微型发光二极管的上下端面进行保护，避免了所述蓝色微型发光二极管受到压力的作用，被压碎或是破裂，影响显示质量；最后，所述色阻层包括彩色色阻层和彩色量子点层，所述彩色色阻层分为：红色色阻层、绿色色阻层和透明色阻层，所述彩色量子点层包括：红色量子点区域、绿色量子点区域和透明区域；各种颜色的所述色阻层正对于所述蓝色微型发光二极管层，由所述黑色矩阵间隔开进行设置，避免了所述显示面板发生串扰，影响显示面板的显示质量，也进一步提高了红色子像素、绿色子像素以及蓝色子像素的亮度和对比度。\n\n[0082]以上对本申请实施例所提供的一种显示面板及其制作方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示领域，特别是涉及一种显示面板的制作方法。\n\n背景技术\n\n[0002]Micro LED显示装置相比OLED显示装置具有可靠性高，色域高，亮度高，透明度高，PPI(Pixels Per Inch，像素密度)高；且封装要求低，更容易实现柔性及无缝拼接显示，是未来极具有发展潜力的未来显示装置。\n\n[0003]另一方面，Micro LED芯片的高度较高，使得Micro LED显示装置的侧向出光十分严重；若采用传统的顶发射型Micro LED，将导致显示面板发生串扰，对显示器的对比度、色纯度等都将造成严重影响；进一步地，在上下基板对组的过程中，真空压力可能压碎MicroLED芯片，使其失效，影响整体显示效果。\n\n[0004]因此，现有的micro LED显示装置的技术中，还存在着micro LED显示面板的由于Micro LED芯片的高度过高，使得显示面板在显示时容易发生串扰，影响显示面板的显示质量的问题，急需改进。\n\n发明内容\n\n[0005]本申请涉及一种显示面板及其制作方法，用于解决现有技术中存在着显示面板的由于芯片的高度过高，使得显示面板在显示时容易发生串扰，影响显示面板的显示质量的问题。\n\n[0006]为解决上述问题，本申请提供的技术方案如下：\n\n[0007]本申请提供的一种显示面板，所述显示面板包括：第一基板；\n\n[0008]第二基板，正对于所述第一基板进行设置；\n\n[0009]驱动电路，相对所述第一基板，靠近所述第二基板一侧进行设置；\n\n[0010]色阻层，正对于所述驱动电路，靠近所述第一基板一侧进行设置；\n\n[0011]所述色阻层包括彩色色阻层和彩色量子点层，且所述驱动电路为底发射型发光二极管驱动电路。\n\n[0012]根据本申请提供的一实施例，所述驱动电路包括蓝色微型发光二极管层以及设置在所述蓝色微型发光二极管层四周的胶层。\n\n[0013]根据本申请提供的一实施例，所述胶层为白胶。\n\n[0014]根据本申请提供的一实施例，所述白胶的厚度大于所述蓝色微型发光二极管层的厚度，所述蓝色微型发光二极管层具有一定的预设厚度。\n\n[0015]根据本申请提供的一实施例，所述蓝色微型发光二极管层的预设厚度为：90-190um。\n\n[0016]根据本申请提供的一实施例，所述彩色色阻层分为：红色色阻层、绿色色阻层和透明色阻层，所述彩色量子点层包括：红色量子点区域、绿色量子点区域和透明区域；各种颜色的所述彩色色阻层正对于所述蓝色微型发光二极管层，间隔设置。\n\n[0017]根据本申请提供的一实施例，所述红色色阻层正对于所述红色量子点区域设置，所述绿色色阻层正对于所述绿色量子点区域设置，所述透明色阻层正对于所述透明区域设置。\n\n[0018]根据本申请提供的一实施例，所述驱动电路与所述第二基板之间还设置有聚酰亚胺薄膜和薄膜晶体管层，所述薄膜晶体管层电性连接所述驱动电路，所述聚酰亚胺薄膜的厚度小于所述蓝色微型发光二极管层，且所述聚酰亚胺薄膜具有一定的预设厚度。\n\n[0019]根据本申请提供的一实施例，所述聚酰亚胺薄膜的厚度小于所述蓝色微型发光二极管层的厚度，所述聚酰亚胺薄膜的预设厚度为：10-19um。\n\n[0020]本申请还提供一种显示面板的制作方法，该方法包括：背光基板的制作和彩膜基板的制作；首先，所述背光基板的制作步骤为：\n\n[0021]S10，提供第三基板，在所述第三基板一侧沉积聚酰亚胺薄膜；\n\n[0022]S20，在所述聚酰亚胺薄膜背离所述第三基板一侧形成薄膜晶体管层；\n\n[0023]S30，在所述薄膜晶体管层背离所述聚酰亚胺薄膜一侧形成蓝色微型发光二极管层；\n\n[0024]S40，在所述蓝色微型发光二极管背离所述薄膜晶体管层的一侧形成所述第二基板；\n\n[0025]S50，采用激光剥离的方法剥离所述第三基板；\n\n[0026]然后，所述彩膜基板的制作步骤为：\n\n[0027]S60，在所述第一基板的一侧制作黑色矩阵，分隔开各个色阻层；\n\n[0028]S70，采用黄光制程制作红色色阻层、绿色色阻层和透明色阻层；\n\n[0029]S80，采用化学气相沉积法在彩色色阻层的一侧沉积绝缘层；\n\n[0030]S90，采用黄光制程在所述绝缘层背离所述彩色色阻层的一侧形成黑色像素限定层，所述黑色像素限定层正对于所述黑色矩阵进行设置；\n\n[0031]S100，在所述黑色像素限定层间隔开的各个区域内间隔注入红色量子点和绿色量子点；\n\n[0032]最后，将所述背光基板与所述彩膜基板进行组装：\n\n[0033]S110，将所述聚酰亚胺薄膜一侧与所述彩色量子点层一侧进行对组安装。\n\n[0034]与现有技术相比，本申请提供的一种显示面板及其制作方法具有的有益效果为：\n\n[0035]1.首先，本申请所提供的显示面板，所述蓝色微型发光二极管层具有一定的预设厚度，所述蓝色微型发光二极管层的预设厚度为90-190um，避免了芯片高度过高，在上下基板对组的过程中压力压碎所述蓝色微型发光二极管层的可能；\n\n[0036]2.其次，本申请所提供的显示面板，所述蓝色微型发光二极管层的四周设置有白胶，所述白胶包围所述蓝色微型发光二极管层，既可以保护所述蓝色微型发光二极管层，避免了所述蓝色微型发光二极管层在制作过程中受到伤害；所述白胶还可以对所述蓝色微型发光二极管层所发出的光进行反射，使得所有的光线聚拢在所述显示面板底发射方向，提高了光线的利用率、亮度和对比度；\n\n[0037]3.进一步地，所述白胶的厚度高于所述蓝色微型发光二极管层的厚度，在上下基板进行对组的过程中，还可以对所述蓝色微型发光二极管的上下端面进行保护，避免了所述蓝色微型发光二极管受到压力的作用，被压碎或是破裂，影响显示质量；\n\n[0038]4.最后，所述色阻层包括彩色色阻层和彩色量子点层，所述彩色色阻层分为：红色色阻层、绿色色阻层和透明色阻层，所述彩色量子点层包括：红色量子点区域、绿色量子点区域和透明区域；各种颜色的所述色阻层正对于所述蓝色微型发光二极管层，由所述黑色矩阵间隔开进行设置，避免了所述显示面板发生串扰，影响显示面板的显示质量，也进一步提高了红色子像素、绿色子像素以及蓝色子像素的亮度和对比度。\n\n附图说明\n\n[0039]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0040]图1为本申请实施例提供的显示面板的结构示意图。\n\n[0041]图1A-1M为本申请实施例提供的显示面板的制作工艺图。\n\n[0042]图2为本申请实施例提供的显示面板制作方法的流程示意图。\n\n具体实施方式\n\n[0043]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0044]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0045]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0046]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0047]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0048]本申请提供一种显示面板及其制作方法，具体参阅图1-图2。\n\n[0049]现有的micro LED显示面板中Micro LED芯片的高度较高，使得Micro LED显示装置的侧向出光十分严重；若采用传统的顶发射型micro LED，将导致显示面板发生串扰，对显示器的对比度、色纯度等都将造成严重影响，进而影响显示面板的显示质量的问题。因此，本申请特提出一种micro LED显示面板及其制作方法。\n\n[0050]参阅图1，本申请提供的一种显示面板的结构示意图，所述显示面板包括：\n\n[0051]第一基板8；\n\n[0052]第二基板1，正对于所述第一基板8进行设置；\n\n[0053]驱动电路，相对所述第一基板8，靠近所述第二基板1一侧进行设置；\n\n[0054]色阻层，正对于所述驱动电路，靠近所述第一基板8一侧进行设置；\n\n[0055]所述色阻层包括彩色色阻层7和彩色量子点层5，且所述驱动电路为底发射型发光二极管驱动电路。进一步地，所述彩色量子点层5内设置量子点或是散射颗粒。\n\n[0056]在本申请的一种实施例中，所述显示面板为Micro LED显示面板，是LED微缩化和矩阵化技术，简单来说，就是将LED背光源进行薄膜化、微小化、阵列化，可以让LED单元小于100微米，与OLED一样能够实现每个图元单独定址，单独驱动发光(自发光)；在本申请的另一种实施例中，所述显示面板为Mini LED(次毫米发光二极管)显示面板，晶粒尺寸在50微米以上，250微米以下的LED，Mini LED是介于传统LED与Micro LED之间，为传统LED背光基础上的改良版本。\n\n[0057]在本申请的一种实施例中，所述驱动电路包括蓝色微型发光二极管层、以及设置在所述蓝色微型发光二极管41四周的胶层42，所述胶层42为白胶。\n\n[0058]进一步地，所述白胶的厚度大于所述蓝色微型发光二极管41的厚度，以使得所述白胶将所述蓝色微型发光二极管41完全包住，一方面所述白胶可以保护所述蓝色微型发光二极管41，避免所述蓝色微型发光二极管41的表面在制作过程中受到破坏，影响所述显示面板的显示质量；另一方面，所述白胶将所述蓝色微型发光二极管41所发出的光进行聚拢，使得所有的光线聚拢在所述显示面板底发射方向，提高了光线的利用率、亮度和对比度。\n\n[0059]进一步地，所述白胶的四周，除了靠近所述彩色量子点5的一侧(用于所述蓝色微型发光二极管出光的一侧)均可以再另行设置一层黑胶43，进一步将所述蓝色微型发光二极管41所发出的光线进行聚拢，防止光线的泄露，提高所述显示面板的光线亮度和对比度。\n\n[0060]进一步地，所述蓝色微型发光二极管41具有一定的预设厚度，所述蓝色微型发光二极管层的预设厚度为：90-190um。\n\n[0061]在本申请的一种实施例中，所述彩色色阻层7分为：红色色阻层(R)71、绿色色阻层(G)72和透明色阻层(T)73，各个所述彩色色阻层之间设置有黑色矩阵74将不同的所述彩色色阻层间隔开，避免不同的所述彩色色阻层7颜色的串扰；所述彩色量子点层5包括：红色量子点区域51、绿色量子点区域52和透明区域53；所述红色量子点区域51内注入红色量子点，所述绿色量子点区域52内注入绿色量子点，所述透明区域53内注入透明量子点；所述彩色量子点区域5由黑色像素限定层54所阻隔开，以使得所述彩色量子点层5能够分成多种颜色的量子点区域分别注入不同颜色的量子点，可以有效地利用光能，以及防止所述Micro LED量子点层中的像素间颜色的相互干扰，所述黑色像素限定层54与所述黑色矩阵74可以采用相同的材料或是不同的材料，所述黑色像素限定层54为了使各种不同颜色的彩色墨水能够打印到对应的区域内并形成相应的子像素的形状，在打印基板上需要设置所述黑色像素限定层54，将墨水打印到所述黑色像素限定层54限定的孔洞中，所述黑色像素限定层54与所述黑色矩阵74的共性都是为了遮光并隔绝不同颜色的色阻；各种颜色的所述彩色色阻层5正对于所述蓝色微型发光二极管41，间隔设置，即所述蓝色微型发光二极管41包括多个间隔设置的蓝色微型发光二极管，每个所述蓝色微型发光二极管正对于一个所述彩色色阻层7，所述彩色色阻层可以是红色色阻层71、绿色色阻层72或是透明色阻层73，这样集中了每个所述彩色色阻层7所对应区域的颜色，有利于提高各个所述彩色色阻层7区域的亮度和对比度。\n\n[0062]进一步地，所述彩色量子点层5也可以叫作色转换层，可以对所述蓝色微型发光二极管41发出的光的颜色进行转换，即当所述蓝色微型发光二极管41所发出的光经过所述红色量子点区域51时，变成红色的光，当所述蓝色微型发光二极管41所发出的光经过所述绿色量子点区域52时，变成绿色的光，当所述蓝色微型发光二极管41发出的光经过所述透明区域53时，直接发出蓝色的光，进而可以组成RGB子像素单元。\n\n[0063]进一步地，所述红色色阻层71正对于所述红色量子点区域51设置，所述绿色色阻层72正对于所述绿色量子点区域52设置，所述透明色阻层73正对于所述透明区域53设置。\n\n[0064]在本申请的一种实施例中，所述驱动电路与所述第二基板1之间还设置有聚酰亚胺薄膜2和薄膜晶体管层3，所述薄膜晶体管层3电性连接所述驱动电路，所述聚酰亚胺薄膜2的厚度小于所述蓝色微型发光二极管41，且所述聚酰亚胺薄膜2具有一定的预设厚度。进一步地，所述聚酰亚胺薄膜2的预设厚度为：10-19um。\n\n[0065]进一步地，所述第一基板8、所述第二基板1和所述第三基板9均可以是玻璃基板或是树脂基板。\n\n[0066]进一步地，所述驱动电路不仅可以是与薄膜晶体管配套的TFT驱动电路，还可以是CMOS驱动电路，当所述驱动电路为CMOS驱动电路时，所述第二基板采用与之配套的CMOS基板。\n\n[0067]参阅图1A-1M以及图2，本申请还提供一种显示面板的制作方法，该方法包括：背光基板的制作和彩膜基板的制作；首先，所述背光基板的制作步骤为：\n\n[0068]S10，提供第三基板9，在所述第三基板9一侧沉积聚酰亚胺薄膜2；所述第三基板9可以是玻璃基板也可以是树脂基板等，以用于支撑所述薄膜晶体管层3和所述驱动电路，还可以作为所述底发射型驱动电路与所述彩色量子点墨水之间的介质；因此，所述聚酰亚胺薄膜2具有一定的预设厚度，所述聚酰亚胺薄膜2的预设厚度为：10-19um，因此，降低了所述底发射型微型发光二极管驱动电路的厚度，避免了所述micro LED/Mini LED显示面板芯片高度过高，造成显示面板在显示时发生串扰的问题；\n\n[0069]S20，在所述聚酰亚胺薄膜2背离所述第三基板9一侧形成薄膜晶体管层3；所述薄膜晶体管层3电性连接所述蓝色微型发光二极管41，用于驱动所述蓝色微型发光二极管41；\n\n[0070]S30，在所述薄膜晶体管层3背离所述聚酰亚胺薄膜2一侧形成蓝色微型发光二极管层；所述蓝色微型发光二极管41发出蓝光，用于激发所述红色量子点和所述绿色量子点，分别形成红色子像素和绿色子像素，同时，在穿过所述透明区域时提供蓝色子像素，这样就可以形成多个RGB子像素单元；此外，所述蓝色微型发光二极管41的四周还设置有白胶42，所述白胶42对所述蓝色微型发光二极管41进行封装，一方面对所述蓝色微型发光二极管41的表面起到保护作用，避免所述蓝色微型发光二极管41在制作过程中受到伤害，另一方面，所述白胶42还可以将所述蓝色微型发光二极管41所发出的光进行聚拢，将所有的光线集中在所述蓝色微型发光二极管41的底反射方向，提高各个所述彩色量子点区域内的光线利用率、亮度和对比度；\n\n[0071]S40，在所述蓝色微型发光二极管41背离所述薄膜晶体管层3的一侧形成所述第二基板1；将所述白胶42背离所述薄膜晶体管层3的一侧进行磨平处理，再在其上形成所述第二基板1，当所述第三基板9被剥离后，作为所述驱动电路的支撑，以便进行后续的对组；\n\n[0072]S50，采用激光剥离的方法剥离所述第三基板9；\n\n[0073]然后，所述彩膜基板的制作步骤为：\n\n[0074]S60，在所述第一基板8的一侧制作黑色矩阵74，分隔开各个色阻层；防止各个所述子像素的颜色发生串扰；\n\n[0075]S70，采用黄光制程制作红色色阻层71、绿色色阻层72和透明色阻层73；分别使用红色光阻和绿色光阻的黄光制程制备所述红色色阻层71和所述绿色色阻层72，可有效减少背光基板中蓝光透过，提高显示器的色纯度和对比度；\n\n[0076]S80，采用化学气相沉积法在彩色色阻层的一侧沉积绝缘层6；所述绝缘层6为二氧化硅，所述二氧化硅层可防止所述黑色像素限定层54对下层光阻造成影响，也可以防止上下光阻层之间发生侵蚀，同时，还可以对所述红色色阻层71和所述绿色色阻层72与所述黑色矩阵74的搭接处(BM overlay)所形成的牛角地形能起到一定的平坦作用；\n\n[0077]S90，采用黄光制程在所述绝缘层背离所述彩色色阻层的一侧形成黑色像素限定层54，所述黑色像素限定层54正对于所述黑色矩阵74进行设置；\n\n[0078]S100，在所述黑色像素限定层54间隔开的各个区域内间隔注入红色量子点和绿色量子点；即在所述黑色像素限定层54所限定的各个区域内分别形成的所述红色量子点区域71、所述绿色量子点区域72和所述透明量子点区域73；\n\n[0079]最后，将所述背光基板与所述彩膜基板进行组装：\n\n[0080]S110，将所述聚酰亚胺薄膜2一侧与所述彩色量子点层7一侧进行对组安装。\n\n[0081]因此，本申请提供的一种显示面板及其制作方法具有的有益效果为：首先，本申请所提供的micro LED显示面板，所述蓝色微型发光二极管层具有一定的预设厚度，所述蓝色微型发光二极管层的预设厚度为90-190um，避免了micro LED/Mini LED芯片高度过高，在上下基板对组的过程中压力压碎所述蓝色微型发光二极管层的可能；其次，本申请所提供的显示面板，所述蓝色微型发光二极管层的四周设置有白胶，所述白胶包围所述蓝色微型发光二极管层，既可以保护所述蓝色微型发光二极管层，避免了所述蓝色微型发光二极管层在制作过程中受到伤害；所述白胶还可以对所述蓝色微型发光二极管层所发出的光进行反射，使得所有的光线聚拢在所述micro LED显示面板底发射方向，提高了光线的利用率、亮度和对比度；进一步地，所述白胶的厚度高于所述蓝色微型发光二极管层的厚度，在上下基板进行对组的过程中，还可以对所述蓝色微型发光二极管的上下端面进行保护，避免了所述蓝色微型发光二极管受到压力的作用，被压碎或是破裂，影响显示质量；最后，所述色阻层包括彩色色阻层和彩色量子点层，所述彩色色阻层分为：红色色阻层、绿色色阻层和透明色阻层，所述彩色量子点层包括：红色量子点区域、绿色量子点区域和透明区域；各种颜色的所述色阻层正对于所述蓝色微型发光二极管层，由所述黑色矩阵间隔开进行设置，避免了所述显示面板发生串扰，影响显示面板的显示质量，也进一步提高了红色子像素、绿色子像素以及蓝色子像素的亮度和对比度。\n\n[0082]以上对本申请实施例所提供的一种显示面板及其制作方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10825, 23879, '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种液晶显示模组及显示装置。\n\n背景技术\n\n[0002]屏下指纹识别作为便携电子产品的又一亮点，成为电子行业争相研究及应用的热潮。要实现屏下指纹解锁功能，要在手机屏原来电子元件的基础增加指纹识别的各个模块如连接器、红外信号灯，OLED显示面板由于不受背光限制，对于屏下指纹识别的实现更为容易，而要在液晶显示模组上实现屏下指纹解锁，则要解决背光挖孔、下边框增加等一系列问题。如图1所示，目前已有的液晶显示面板的屏下指纹识别方案是将红外灯放置在下边框延伸的方向，这无疑会增加液晶显示模组的下边框，与液晶显示模组屏窄边框、高利用率的发展趋势相悖。\n\n[0003]因此，现有的液晶显示模组存在红外信号灯设置不当，导致液晶显示模组下边框增大的问题。\n\n发明内容\n\n[0004]本申请实施例提供一种液晶显示模组及显示装置，可以有效缓解现有液晶显示模组存在红外信号灯设置不当导致液晶显示模组下边框增大的问题。\n\n[0005]为解决以上问题，本申请提供的技术方案如下：\n\n[0006]本申请提供一种液晶显示模组，包括：\n\n[0007]液晶显示面板，在下边框区域内形成有点灯测试端子，在所述点灯测试端子上绑定有指纹识别信号灯，在信号转换区内形成有电连接所述指纹识别信号灯的指纹驱动端子；\n\n[0008]柔性电路板，在所述信号转换区内与所述液晶显示面板绑定，包括显示面板驱动芯片和指纹识别驱动芯片，所述显示面板驱动芯片用于驱动所述液晶显示面板工作，所述指纹识别驱动芯片用于通过所述指纹驱动端子驱动所述指纹识别信号灯工作。\n\n[0009]在一些实施例中，所述指纹识别信号灯包括小型有机发光二极管和微型有机发光二极管中的一种。\n\n[0010]在一些实施例中，所述指纹识别信号灯产生的光为红外光。\n\n[0011]在一些实施例中，所述指纹识别信号灯包括发射信号灯和接收信号灯。\n\n[0012]在一些实施例中，所述指纹识别信号灯在所述液晶显示模组上沿所述液晶显示模组中心线轴对称设置。\n\n[0013]在一些实施例中，所述信号灯的个数为两个。\n\n[0014]在一些实施例中，所述信号灯在所述信号端子两侧呈阵列分布。\n\n[0015]在一些实施例中，所述信号灯在所述信号端子的一侧。\n\n[0016]在一些实施例中，所述液晶显示面板包括多个图像传感器，所述图像传感器与所述柔性电路板相连。\n\n[0017]本申请还提供一种显示装置，包括上述的液晶显示模组。\n\n[0018]本申请公开了一种液晶显示模组及显示装置，该液晶显示模组包括液晶显示面板和柔性电路板，该液晶显示面板在下边框区域内形成点灯测试端子，在点灯测试端子上绑定指纹识别信号灯，在信号转换区内，点灯测试端子形成有指纹识别信号灯的指纹驱动端子。在液晶显示模组测试完成后，本申请通过在点灯测试端子上设置指纹识别信号灯和指纹驱动端子，可以合理利用下边框面积，在不增加液晶显示模组下边框及不损失面板透过率的情况下，将信号灯合理放置。\n\n附图说明\n\n[0019]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0020]图1为现有技术中的液晶显示模组的剖面示意图；\n\n[0021]图2为本申请实施例提供的液晶显示模组的平面示意图；\n\n[0022]图3为本申请实施例提供的液晶显示模组的剖面示意图；\n\n[0023]图4为液晶显示模组制作的流程示意图。\n\n具体实施方式\n\n[0024]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0025]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0026]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0027]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0028]如图1所示，为现有屏下指纹识别技术中的液晶显示模组，所述液晶显示模组包括液晶显示面板，所述液晶显示面板包括阵列基板110、与阵列基板110相对设置的彩膜基板130，以及位于所述阵列基板110和所述彩膜基板130之间的液晶盒120。所述液晶显示模组包括显示区、弯折区以及位于所述显示区和所述弯折区之间的绑定区A1，在绑定区A1内，所述液晶显示模组包括液晶显示面板和柔性电路板300，以及指纹识别信号灯200，由于指纹识别信号灯200设置在下边框内，增加了下边框的面积，违背了主流液晶显示模组减少下边框的趋势。\n\n[0029]如图2所示，本申请提供的液晶显示模组的平面示意图，图3为本申请提供的液晶显示模组的剖面示意图，包括液晶显示面板100和柔性电路板300，液晶显示面板包括显示区和信号转换区A-A`；其中，所述液晶显示面板100包括点灯测试端子400，在所述点灯测试端子400上绑定有指纹识别信号灯200，在信号转换区内，所述点灯测试端子400形成有电连接所述指纹识别信号灯的驱动端子；所述柔性电路板300，在所述信号转换区内与所述液晶显示面板绑定，包括显示面板驱动芯片和指纹识别驱动芯片，所述显示面板驱动芯片用于驱动所述液晶显示面板工作，所述指纹识别驱动芯片用于通过所述指纹驱动端子驱动所述指纹识别信号灯工作。液晶显示面板100包括阵列基板，彩膜基板以及位于所述阵列基板和所述彩膜基板之间的液晶盒，所述彩膜基板上还设置有导光板和可见光光源。所述阵列基板包括指纹感应装置，能够将指纹信息转化为电信号，将电信号传输给柔性电路板300。\n\n[0030]在一些实施例中，所述指纹感应装置为图像传感器，能够将感受到的光的变化转化为电信号传输给芯片，所述图像传感器设置在阵列基板中，所述图像传感器的感应光一般为不可见光。\n\n[0031]在一些实施例中，所述液晶显示面板在像素开口区加入控光膜，用以区分指纹识别光线和正常的显示光线，并且将所述图像传感器设置为仅能识别指纹识别光线，如此设计使得不可见光只能通过设置于小孔层内的小孔传递至所述图像传感器，从而提高指纹识别信号的信噪比。\n\n[0032]在一些实施例中，点灯测试端子400包括第一测试端子和第二测试端子，所述第一测试端子与液晶显示面板100的扫描线相连，用于向扫描线提供和接收第一检测信号，第二测试端子与液晶显示面板100的源漏极相连，用于向液晶显示面板100的源漏极提供和接收第二检测信号。当液晶显示面板组装完成后，点灯测试端子400连接测试装置对液晶显示面板进行检测。检测无故障后，将第一测试端子改为指纹驱动端子，所述指纹驱动端子用于向所述指纹识别信号灯200提供电信号。所述指纹识别信号灯200关于液晶显示模组的中心线轴对称设计。\n\n[0033]在一些实施例中，所述指纹识别信号灯200为两个，所述指纹识别信号灯200距液晶显示模组显示区的距离为4微米到6微米之间。\n\n[0034]在一些实施例中，所述指纹识别信号灯200在点灯测试端子400两侧阵列分布，所述相邻指纹识别信号灯200的之间的距离为4微米到6微米之间，所述指纹识别信号灯200距液晶显示模组显示区的距离为4微米到6微米之间。\n\n[0035]在一些实施例中，所述液晶显示模组完成后，在所述点灯测试端子400上安装指纹识别信号灯200，所述指纹识别信号灯200包括第一行LED信号灯和第二行LED信号灯，第二行LED信号灯的间距为0.5mm～2mm。若在水平方向上，相邻的第二行LED信号灯的间距过大，就会导致在相同尺寸的显示面板上，所述第二行LED的数量过少，这样就会造成所述信号灯200提供的光线均匀性变差，影响传感器感应。若在水平方向上，相邻所述第二LED的间距过小，所述第一行LED发出的红外光容易被第二行LED阻挡，影响所述信号灯的传输效率。本实施例中，所述第一行LED信号灯与所述第二LED的间距大于或等于0.3mm。若所述第一LED信号灯与第二行LED信号灯的间距过小，采用焊盘固定所述第一行LED信号灯与第二行LED信号灯的工艺难度大，第一行LED信号灯和第二行LED信号灯之间，容易发生吊桥或移位。若所述第一行LED信号灯与所述第二行LED信号灯的间距过大，造成所述第一行LED距所述第二行LED的距离过远，所述第一行LED发出的红外光传输至所述液晶显示面板导光板的难度大，容易导致信号灯光线的损失。\n\n[0036]在一些实施例中，本申请采用的指纹识别信号灯为不可见光，不可见光是指人类肉眼看不到的光，其中主还包括紫外光、远红外光等。一般人的眼睛可以感知的电磁波的波长在400到700纳米之间，采用不可见光是为了提供图像传感器的识别信号，液晶显示模组需要的可见光区别。所述信号灯为小型有机发光二极管(简称mini-LED)或微型有机发光二极管(简称Micro-LED)，其中mini-LED尺寸约为100微米的LED，mini-LED的优点容易实现批量生产，而Micro-LED尺寸为1微米至100微米，Micro-LED的优点为高效率，高亮度，高可靠性，响应时间短。由于在指纹识别时，用于检测液晶显示面板的金属走线未开始正常工作，因此可以作为所述信号灯的走线。但不限于此，在不影响液晶显示模组正常工作的前提下，在其他部分实施例中也可以复用其他走线，从而节省空间和成本。\n\n[0037]在一些实施例中，所述液晶显示面板采用框胶连接彩膜基板和阵列基板。在绑定区内，所述液晶框胶开有小口，内贴附有滤光片，所述滤光片让不可见光透过，传递给图像传感器，从而提高指纹识别信号的信噪比。\n\n[0038]在一些实施例中，当用户进行存储指纹时，手指按压液晶显示模组屏幕时，指纹驱动芯片驱动发射信号灯发射红外线，手指折射红外光线传输给图像传感器，所述图像传感器根据接收的红外线光形成指纹图案，并传输给柔性电路板和接收信号灯。所述柔性电路板包含有指纹识别芯片，所述指纹识别芯片对所述指纹图案进行分析，提出特征值，存储在指纹识别芯片中。同时，接收信号灯接收到指纹图像，向指纹识别驱动芯片发送终止信号，所述发射信号灯停止工作。\n\n[0039]在一些实施例中，当用户进行解锁时，手指按压液晶显示模组屏幕时，指纹驱动芯片驱动发射信号灯发射红外线，手指折射红外光线传输给图像传感器，所述图像传感器根据接收的红外线光形成指纹图案，并传输给柔性电路板和接收信号灯。所述柔性电路板包含有指纹识别芯片，所述指纹识别芯片对所述图案进行分析，提出特征值，与存储在芯片中的指纹进行对比，若特征值对比结果大于百分之七十，则芯片向液晶显示模组发送解锁成功指令，反之，则发送解锁失败。\n\n[0040]本申请的优点在于，在液晶显示面板测试完成后，通过在信号端口上设置信号灯，可以合理利用信号端口，在不增加液晶显示模组下边框及不损失面板透过率的情况下，将信号灯合理放置。\n\n[0041]图4为液晶显示模组的制作流程，如图4所示，液晶显示模组的制作流程包括：\n\n[0042]步骤S1：提供一阵列基板母版，所述阵列基板母版的下边框设置有点灯测试端子；\n\n[0043]步骤S2：在所述阵列基板上放置液晶盒，在所述液晶盒周围涂布框胶；\n\n[0044]步骤S3：提供一彩膜基板母版，将彩膜基板母版和所述阵列基板母版对盒设置，形成液晶显示面板母版；\n\n[0045]步骤S4：提供一检测仪器，通过点灯测试端子对所述液晶显示面板母版进行检测，检测完毕后，安装指纹识别信号灯；\n\n[0046]步骤S5：对所述液晶显示面板母版进行切割，形成液晶显示面板。\n\n[0047]在步骤S1中，所述阵列基板母版由下往上依次形成有衬底、感应层、光学胶层、驱动电路层，其中感应层形成有指纹识别装置。衬底用于支撑液晶显示模组，衬底通常为聚酰亚胺薄膜，具有良好的绝缘性和耐热性。光学胶层材料为光学丙烯酸压敏胶，是一种无基体材料，具有高透光率、低露度，高黏着力，抗紫外线等优点，为感应层提供红外光。驱动电路层阵列基板包括有源层、栅极、栅极绝缘层、源漏极层，像素电极层和光阻。感应层设置有图像传感器，能够将感受到的光的变化转化为电信号传输给芯片，所述图像传感器设置在阵列基板中，所述感应光分为可见光和不可见光，所述不可见光用于识别指纹，所述可见光用于液晶显示模组呈现图像。在一些实施例中，驱动电路层还贴附有第二光学胶层。在一些实施例中，液晶显示模组还包括覆盖窗口，所述覆盖窗口为玻璃用于封装液晶显示模组，所述覆盖窗口通过光学胶相连。\n\n[0048]在步骤S2中，所述框胶为光阻，所述涂布装置在所述液晶盒周围涂布光阻，经过紫外光照射蓄能。\n\n[0049]在步骤S3中，所述彩膜基板包括偏光片、彩膜电极，所述彩膜电极与所述像素电极相对设置，对盒设置后对所述框胶进行紫外线固化，固化完成后，在液晶盒内注入液晶。然后在彩膜基板上安装背信号灯模组，所述背信号灯模组包括LED背光灯、胶框、导光板、反射片、扩散片、增光片(BEF、棱镜片)、黑白胶等。\n\n[0050]在步骤S4中，在一些实施例中，液晶显示面板组装完成后，在阵列基板上的母版的信号端子连接测试装置对液晶显示面板进行检测，所述信号端子连接阵列基板的数据线和扫描线，检测完成后，拆除部分信号端子，设置信号灯，其中所述信号灯关于液晶显示模组的中心线轴对称设计。\n\n[0051]在一些实施例中，所述信号灯为两个，所述信号灯距液晶显示模组显示区的距离为4微米到6微米之间。\n\n[0052]在一些实施例中，所述信号灯在信号端子两端阵列分布，所述相邻信号灯的之间的距离为4微米到6微米之间，所述信号灯距液晶显示模组显示区的距离为4微米到6微米之间。\n\n[0053]在一些实施例中，拆除全部的信号端子，安装信号灯所述信号灯包括第一行LED信号灯和第二行LED信号灯，第二行LED信号灯的间距为0.5mm～2mm。若相邻的第二行LED信号灯的间距过大，在相同大小的屏幕下，所述第二行LED放置的数量减少，这样造成所述信号灯提供的光线均匀性变差，影响传感器感应。若相邻所述第二LED的间距过小，所述第一行LED发出的红外光容易被所述第二行LED阻挡，影响所述信号灯的传输效率。本实施例中，所述第一行LED信号灯与所述第二LED的间距大于或等于0.3mm。若所述第一LED信号灯与第二行LED信号灯的间距过小，采用焊盘固定所述若所述第一行LED信号灯与第二行LED信号灯的工艺难度大，容易发生吊桥或移位。若所述第一行LED信号灯与所述第二行LED信号灯的间距过大，造成所述第一行LED距所述第二行LED的距离过远，所述第一行LED发出的红外光传输至所述液晶显示面板导光板的难度大，容易导致信号灯光线的损失。\n\n[0054]在一些实施例中，本申请采用的信号灯为不可见光，不可见光是指人类肉眼看不到的光，其中主还包括紫外光、远红外光等。一般人的眼睛可以感知的电磁波的波长在400到700纳米之间，采用不可见光是为了提供图像传感器的识别信号，液晶显示模组需要的可见光区别。所述信号灯为小型有机发光二极管(简称mini-LED)或微型有机发光二极管(简称Micro-LED)，其中mini-LED尺寸约为100微米的LED，mini-LED的优点容易实现批量生产，而Micro-LED尺寸为1微米至100微米，Micro-LED的优点为高效率，高亮度，高可靠性，响应时间短。所述信号灯200的走线为采用原有的信号端子的金属走线，所述信号灯通过金属走线得到电信号。由于在指纹识别时，用于检测液晶显示面板的金属走线未开始正常工作，因此可以作为所述信号灯的走线。但不限于此，在不影响液晶显示模组正常工作的前提下，在其他部分实施例中也可以复用其他走线，从而节省空间和成本。\n\n[0055]本申请同时提供一种显示装置，所述显示装置包括上述的液晶显示模组，所述液晶显示模组包括多个处理器(处理器可以包括但不限于微处理器MCU或可编程逻辑器件FPGA等的处理装置)和用于存储数据的存储器。\n\n[0056]在一些实施例中，当用户进行存储指纹时，手指按压液晶显示模组屏幕时，手指折射红外光线传输给图像传感器，所述图像传感器根据接收的红外线光形成指纹图案，并传输给柔性电路板，所述柔性电路板包含有芯片，所述芯片对所述图案进行分析，提出特征值，存储在芯片中。\n\n[0057]在一些实施例中，当用户进行解锁时，手指按压液晶显示模组屏幕时，手指折射红外光线传输给图像传感器，所述图像传感器根据接收的红外线光形成指纹图案，并传输给柔性电路板，所述柔性电路板包含有芯片，所述芯片对所述图案进行分析，提出特征值，与存储在芯片中的指纹进行对比，若特征值对比结果大于百分之七十，则芯片向液晶显示模组发送解锁成功指令，反之，则发送解锁失败。\n\n[0058]本申请公开了一种液晶显示模组及显示装置，该液晶显示模组包括液晶显示面板和柔性电路板，该液晶显示面板在下边框区域内形成点灯测试端子，在点灯测试端子上绑定指纹识别信号灯，在信号转换区内，点灯测试端子形成有指纹识别信号灯的指纹驱动端子。在液晶显示模组测试完成后，本申请通过在点灯测试端子上设置指纹识别信号灯和指纹驱动端子，可以合理利用下边框面积，在不增加液晶显示模组下边框及不损失面板透过率的情况下，将信号灯合理放置。\n\n[0059]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0060]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0061]以上对本申请实施例所提供的一种液晶显示模组及显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种液晶显示模组及显示装置。\n\n背景技术\n\n[0002]屏下指纹识别作为便携电子产品的又一亮点，成为电子行业争相研究及应用的热潮。要实现屏下指纹解锁功能，要在手机屏原来电子元件的基础增加指纹识别的各个模块如连接器、红外信号灯，OLED显示面板由于不受背光限制，对于屏下指纹识别的实现更为容易，而要在液晶显示模组上实现屏下指纹解锁，则要解决背光挖孔、下边框增加等一系列问题。如图1所示，目前已有的液晶显示面板的屏下指纹识别方案是将红外灯放置在下边框延伸的方向，这无疑会增加液晶显示模组的下边框，与液晶显示模组屏窄边框、高利用率的发展趋势相悖。\n\n[0003]因此，现有的液晶显示模组存在红外信号灯设置不当，导致液晶显示模组下边框增大的问题。\n\n发明内容\n\n[0004]本申请实施例提供一种液晶显示模组及显示装置，可以有效缓解现有液晶显示模组存在红外信号灯设置不当导致液晶显示模组下边框增大的问题。\n\n[0005]为解决以上问题，本申请提供的技术方案如下：\n\n[0006]本申请提供一种液晶显示模组，包括：\n\n[0007]液晶显示面板，在下边框区域内形成有点灯测试端子，在所述点灯测试端子上绑定有指纹识别信号灯，在信号转换区内形成有电连接所述指纹识别信号灯的指纹驱动端子；\n\n[0008]柔性电路板，在所述信号转换区内与所述液晶显示面板绑定，包括显示面板驱动芯片和指纹识别驱动芯片，所述显示面板驱动芯片用于驱动所述液晶显示面板工作，所述指纹识别驱动芯片用于通过所述指纹驱动端子驱动所述指纹识别信号灯工作。\n\n[0009]在一些实施例中，所述指纹识别信号灯包括小型有机发光二极管和微型有机发光二极管中的一种。\n\n[0010]在一些实施例中，所述指纹识别信号灯产生的光为红外光。\n\n[0011]在一些实施例中，所述指纹识别信号灯包括发射信号灯和接收信号灯。\n\n[0012]在一些实施例中，所述指纹识别信号灯在所述液晶显示模组上沿所述液晶显示模组中心线轴对称设置。\n\n[0013]在一些实施例中，所述信号灯的个数为两个。\n\n[0014]在一些实施例中，所述信号灯在所述信号端子两侧呈阵列分布。\n\n[0015]在一些实施例中，所述信号灯在所述信号端子的一侧。\n\n[0016]在一些实施例中，所述液晶显示面板包括多个图像传感器，所述图像传感器与所述柔性电路板相连。\n\n[0017]本申请还提供一种显示装置，包括上述的液晶显示模组。\n\n[0018]本申请公开了一种液晶显示模组及显示装置，该液晶显示模组包括液晶显示面板和柔性电路板，该液晶显示面板在下边框区域内形成点灯测试端子，在点灯测试端子上绑定指纹识别信号灯，在信号转换区内，点灯测试端子形成有指纹识别信号灯的指纹驱动端子。在液晶显示模组测试完成后，本申请通过在点灯测试端子上设置指纹识别信号灯和指纹驱动端子，可以合理利用下边框面积，在不增加液晶显示模组下边框及不损失面板透过率的情况下，将信号灯合理放置。\n\n附图说明\n\n[0019]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0020]图1为现有技术中的液晶显示模组的剖面示意图；\n\n[0021]图2为本申请实施例提供的液晶显示模组的平面示意图；\n\n[0022]图3为本申请实施例提供的液晶显示模组的剖面示意图；\n\n[0023]图4为液晶显示模组制作的流程示意图。\n\n具体实施方式\n\n[0024]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0025]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0026]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0027]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0028]如图1所示，为现有屏下指纹识别技术中的液晶显示模组，所述液晶显示模组包括液晶显示面板，所述液晶显示面板包括阵列基板110、与阵列基板110相对设置的彩膜基板130，以及位于所述阵列基板110和所述彩膜基板130之间的液晶盒120。所述液晶显示模组包括显示区、弯折区以及位于所述显示区和所述弯折区之间的绑定区A1，在绑定区A1内，所述液晶显示模组包括液晶显示面板和柔性电路板300，以及指纹识别信号灯200，由于指纹识别信号灯200设置在下边框内，增加了下边框的面积，违背了主流液晶显示模组减少下边框的趋势。\n\n[0029]如图2所示，本申请提供的液晶显示模组的平面示意图，图3为本申请提供的液晶显示模组的剖面示意图，包括液晶显示面板100和柔性电路板300，液晶显示面板包括显示区和信号转换区A-A`；其中，所述液晶显示面板100包括点灯测试端子400，在所述点灯测试端子400上绑定有指纹识别信号灯200，在信号转换区内，所述点灯测试端子400形成有电连接所述指纹识别信号灯的驱动端子；所述柔性电路板300，在所述信号转换区内与所述液晶显示面板绑定，包括显示面板驱动芯片和指纹识别驱动芯片，所述显示面板驱动芯片用于驱动所述液晶显示面板工作，所述指纹识别驱动芯片用于通过所述指纹驱动端子驱动所述指纹识别信号灯工作。液晶显示面板100包括阵列基板，彩膜基板以及位于所述阵列基板和所述彩膜基板之间的液晶盒，所述彩膜基板上还设置有导光板和可见光光源。所述阵列基板包括指纹感应装置，能够将指纹信息转化为电信号，将电信号传输给柔性电路板300。\n\n[0030]在一些实施例中，所述指纹感应装置为图像传感器，能够将感受到的光的变化转化为电信号传输给芯片，所述图像传感器设置在阵列基板中，所述图像传感器的感应光一般为不可见光。\n\n[0031]在一些实施例中，所述液晶显示面板在像素开口区加入控光膜，用以区分指纹识别光线和正常的显示光线，并且将所述图像传感器设置为仅能识别指纹识别光线，如此设计使得不可见光只能通过设置于小孔层内的小孔传递至所述图像传感器，从而提高指纹识别信号的信噪比。\n\n[0032]在一些实施例中，点灯测试端子400包括第一测试端子和第二测试端子，所述第一测试端子与液晶显示面板100的扫描线相连，用于向扫描线提供和接收第一检测信号，第二测试端子与液晶显示面板100的源漏极相连，用于向液晶显示面板100的源漏极提供和接收第二检测信号。当液晶显示面板组装完成后，点灯测试端子400连接测试装置对液晶显示面板进行检测。检测无故障后，将第一测试端子改为指纹驱动端子，所述指纹驱动端子用于向所述指纹识别信号灯200提供电信号。所述指纹识别信号灯200关于液晶显示模组的中心线轴对称设计。\n\n[0033]在一些实施例中，所述指纹识别信号灯200为两个，所述指纹识别信号灯200距液晶显示模组显示区的距离为4微米到6微米之间。\n\n[0034]在一些实施例中，所述指纹识别信号灯200在点灯测试端子400两侧阵列分布，所述相邻指纹识别信号灯200的之间的距离为4微米到6微米之间，所述指纹识别信号灯200距液晶显示模组显示区的距离为4微米到6微米之间。\n\n[0035]在一些实施例中，所述液晶显示模组完成后，在所述点灯测试端子400上安装指纹识别信号灯200，所述指纹识别信号灯200包括第一行LED信号灯和第二行LED信号灯，第二行LED信号灯的间距为0.5mm～2mm。若在水平方向上，相邻的第二行LED信号灯的间距过大，就会导致在相同尺寸的显示面板上，所述第二行LED的数量过少，这样就会造成所述信号灯200提供的光线均匀性变差，影响传感器感应。若在水平方向上，相邻所述第二LED的间距过小，所述第一行LED发出的红外光容易被第二行LED阻挡，影响所述信号灯的传输效率。本实施例中，所述第一行LED信号灯与所述第二LED的间距大于或等于0.3mm。若所述第一LED信号灯与第二行LED信号灯的间距过小，采用焊盘固定所述第一行LED信号灯与第二行LED信号灯的工艺难度大，第一行LED信号灯和第二行LED信号灯之间，容易发生吊桥或移位。若所述第一行LED信号灯与所述第二行LED信号灯的间距过大，造成所述第一行LED距所述第二行LED的距离过远，所述第一行LED发出的红外光传输至所述液晶显示面板导光板的难度大，容易导致信号灯光线的损失。\n\n[0036]在一些实施例中，本申请采用的指纹识别信号灯为不可见光，不可见光是指人类肉眼看不到的光，其中主还包括紫外光、远红外光等。一般人的眼睛可以感知的电磁波的波长在400到700纳米之间，采用不可见光是为了提供图像传感器的识别信号，液晶显示模组需要的可见光区别。所述信号灯为小型有机发光二极管(简称mini-LED)或微型有机发光二极管(简称Micro-LED)，其中mini-LED尺寸约为100微米的LED，mini-LED的优点容易实现批量生产，而Micro-LED尺寸为1微米至100微米，Micro-LED的优点为高效率，高亮度，高可靠性，响应时间短。由于在指纹识别时，用于检测液晶显示面板的金属走线未开始正常工作，因此可以作为所述信号灯的走线。但不限于此，在不影响液晶显示模组正常工作的前提下，在其他部分实施例中也可以复用其他走线，从而节省空间和成本。\n\n[0037]在一些实施例中，所述液晶显示面板采用框胶连接彩膜基板和阵列基板。在绑定区内，所述液晶框胶开有小口，内贴附有滤光片，所述滤光片让不可见光透过，传递给图像传感器，从而提高指纹识别信号的信噪比。\n\n[0038]在一些实施例中，当用户进行存储指纹时，手指按压液晶显示模组屏幕时，指纹驱动芯片驱动发射信号灯发射红外线，手指折射红外光线传输给图像传感器，所述图像传感器根据接收的红外线光形成指纹图案，并传输给柔性电路板和接收信号灯。所述柔性电路板包含有指纹识别芯片，所述指纹识别芯片对所述指纹图案进行分析，提出特征值，存储在指纹识别芯片中。同时，接收信号灯接收到指纹图像，向指纹识别驱动芯片发送终止信号，所述发射信号灯停止工作。\n\n[0039]在一些实施例中，当用户进行解锁时，手指按压液晶显示模组屏幕时，指纹驱动芯片驱动发射信号灯发射红外线，手指折射红外光线传输给图像传感器，所述图像传感器根据接收的红外线光形成指纹图案，并传输给柔性电路板和接收信号灯。所述柔性电路板包含有指纹识别芯片，所述指纹识别芯片对所述图案进行分析，提出特征值，与存储在芯片中的指纹进行对比，若特征值对比结果大于百分之七十，则芯片向液晶显示模组发送解锁成功指令，反之，则发送解锁失败。\n\n[0040]本申请的优点在于，在液晶显示面板测试完成后，通过在信号端口上设置信号灯，可以合理利用信号端口，在不增加液晶显示模组下边框及不损失面板透过率的情况下，将信号灯合理放置。\n\n[0041]图4为液晶显示模组的制作流程，如图4所示，液晶显示模组的制作流程包括：\n\n[0042]步骤S1：提供一阵列基板母版，所述阵列基板母版的下边框设置有点灯测试端子；\n\n[0043]步骤S2：在所述阵列基板上放置液晶盒，在所述液晶盒周围涂布框胶；\n\n[0044]步骤S3：提供一彩膜基板母版，将彩膜基板母版和所述阵列基板母版对盒设置，形成液晶显示面板母版；\n\n[0045]步骤S4：提供一检测仪器，通过点灯测试端子对所述液晶显示面板母版进行检测，检测完毕后，安装指纹识别信号灯；\n\n[0046]步骤S5：对所述液晶显示面板母版进行切割，形成液晶显示面板。\n\n[0047]在步骤S1中，所述阵列基板母版由下往上依次形成有衬底、感应层、光学胶层、驱动电路层，其中感应层形成有指纹识别装置。衬底用于支撑液晶显示模组，衬底通常为聚酰亚胺薄膜，具有良好的绝缘性和耐热性。光学胶层材料为光学丙烯酸压敏胶，是一种无基体材料，具有高透光率、低露度，高黏着力，抗紫外线等优点，为感应层提供红外光。驱动电路层阵列基板包括有源层、栅极、栅极绝缘层、源漏极层，像素电极层和光阻。感应层设置有图像传感器，能够将感受到的光的变化转化为电信号传输给芯片，所述图像传感器设置在阵列基板中，所述感应光分为可见光和不可见光，所述不可见光用于识别指纹，所述可见光用于液晶显示模组呈现图像。在一些实施例中，驱动电路层还贴附有第二光学胶层。在一些实施例中，液晶显示模组还包括覆盖窗口，所述覆盖窗口为玻璃用于封装液晶显示模组，所述覆盖窗口通过光学胶相连。\n\n[0048]在步骤S2中，所述框胶为光阻，所述涂布装置在所述液晶盒周围涂布光阻，经过紫外光照射蓄能。\n\n[0049]在步骤S3中，所述彩膜基板包括偏光片、彩膜电极，所述彩膜电极与所述像素电极相对设置，对盒设置后对所述框胶进行紫外线固化，固化完成后，在液晶盒内注入液晶。然后在彩膜基板上安装背信号灯模组，所述背信号灯模组包括LED背光灯、胶框、导光板、反射片、扩散片、增光片(BEF、棱镜片)、黑白胶等。\n\n[0050]在步骤S4中，在一些实施例中，液晶显示面板组装完成后，在阵列基板上的母版的信号端子连接测试装置对液晶显示面板进行检测，所述信号端子连接阵列基板的数据线和扫描线，检测完成后，拆除部分信号端子，设置信号灯，其中所述信号灯关于液晶显示模组的中心线轴对称设计。\n\n[0051]在一些实施例中，所述信号灯为两个，所述信号灯距液晶显示模组显示区的距离为4微米到6微米之间。\n\n[0052]在一些实施例中，所述信号灯在信号端子两端阵列分布，所述相邻信号灯的之间的距离为4微米到6微米之间，所述信号灯距液晶显示模组显示区的距离为4微米到6微米之间。\n\n[0053]在一些实施例中，拆除全部的信号端子，安装信号灯所述信号灯包括第一行LED信号灯和第二行LED信号灯，第二行LED信号灯的间距为0.5mm～2mm。若相邻的第二行LED信号灯的间距过大，在相同大小的屏幕下，所述第二行LED放置的数量减少，这样造成所述信号灯提供的光线均匀性变差，影响传感器感应。若相邻所述第二LED的间距过小，所述第一行LED发出的红外光容易被所述第二行LED阻挡，影响所述信号灯的传输效率。本实施例中，所述第一行LED信号灯与所述第二LED的间距大于或等于0.3mm。若所述第一LED信号灯与第二行LED信号灯的间距过小，采用焊盘固定所述若所述第一行LED信号灯与第二行LED信号灯的工艺难度大，容易发生吊桥或移位。若所述第一行LED信号灯与所述第二行LED信号灯的间距过大，造成所述第一行LED距所述第二行LED的距离过远，所述第一行LED发出的红外光传输至所述液晶显示面板导光板的难度大，容易导致信号灯光线的损失。\n\n[0054]在一些实施例中，本申请采用的信号灯为不可见光，不可见光是指人类肉眼看不到的光，其中主还包括紫外光、远红外光等。一般人的眼睛可以感知的电磁波的波长在400到700纳米之间，采用不可见光是为了提供图像传感器的识别信号，液晶显示模组需要的可见光区别。所述信号灯为小型有机发光二极管(简称mini-LED)或微型有机发光二极管(简称Micro-LED)，其中mini-LED尺寸约为100微米的LED，mini-LED的优点容易实现批量生产，而Micro-LED尺寸为1微米至100微米，Micro-LED的优点为高效率，高亮度，高可靠性，响应时间短。所述信号灯200的走线为采用原有的信号端子的金属走线，所述信号灯通过金属走线得到电信号。由于在指纹识别时，用于检测液晶显示面板的金属走线未开始正常工作，因此可以作为所述信号灯的走线。但不限于此，在不影响液晶显示模组正常工作的前提下，在其他部分实施例中也可以复用其他走线，从而节省空间和成本。\n\n[0055]本申请同时提供一种显示装置，所述显示装置包括上述的液晶显示模组，所述液晶显示模组包括多个处理器(处理器可以包括但不限于微处理器MCU或可编程逻辑器件FPGA等的处理装置)和用于存储数据的存储器。\n\n[0056]在一些实施例中，当用户进行存储指纹时，手指按压液晶显示模组屏幕时，手指折射红外光线传输给图像传感器，所述图像传感器根据接收的红外线光形成指纹图案，并传输给柔性电路板，所述柔性电路板包含有芯片，所述芯片对所述图案进行分析，提出特征值，存储在芯片中。\n\n[0057]在一些实施例中，当用户进行解锁时，手指按压液晶显示模组屏幕时，手指折射红外光线传输给图像传感器，所述图像传感器根据接收的红外线光形成指纹图案，并传输给柔性电路板，所述柔性电路板包含有芯片，所述芯片对所述图案进行分析，提出特征值，与存储在芯片中的指纹进行对比，若特征值对比结果大于百分之七十，则芯片向液晶显示模组发送解锁成功指令，反之，则发送解锁失败。\n\n[0058]本申请公开了一种液晶显示模组及显示装置，该液晶显示模组包括液晶显示面板和柔性电路板，该液晶显示面板在下边框区域内形成点灯测试端子，在点灯测试端子上绑定指纹识别信号灯，在信号转换区内，点灯测试端子形成有指纹识别信号灯的指纹驱动端子。在液晶显示模组测试完成后，本申请通过在点灯测试端子上设置指纹识别信号灯和指纹驱动端子，可以合理利用下边框面积，在不增加液晶显示模组下边框及不损失面板透过率的情况下，将信号灯合理放置。\n\n[0059]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0060]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0061]以上对本申请实施例所提供的一种液晶显示模组及显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10826, 23880, '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种液晶显示装置。\n\n背景技术\n\n[0002]屏下指纹识别作为便携电子产品的又一亮点，成为电子行业争相研究及应用的热潮。要实现屏下指纹解锁功能，要在手机屏原来电子元件的基础增加指纹识别的各个模块如连接器、红外信号灯，OLED显示面板由于不受背光限制，对于屏下指纹识别的实现更为容易，而要在液晶显示面板上实现屏下指纹解锁，则要解决背光挖孔、下边框增加等一系列问题。如图1所示，目前已有的液晶显示屏下指纹识别方案是将指纹识别信号灯放置在下边框延伸的方向，这样会增加液晶显示装置的下边框；同时采用增光模组和纹识别模组层叠设置，这无疑会增加液晶显示装置的厚度，与液晶显示装置屏窄边框、高利用率的发展趋势相悖。\n\n[0003]因此，现有的液晶显示装置存在和增光模组设置不当，导致液晶显示装置下边框增大、厚度增加的问题。\n\n发明内容\n\n[0004]本申请实施例提供一种液晶显示装置，可以有效缓解现有技术存在液晶显示装置下边框增大、厚度增加的问题。\n\n[0005]为解决以上问题，本申请提供的技术方案如下：\n\n[0006]本申请提供一种液晶显示装置，包括：\n\n[0007]保护盖板；\n\n[0008]液晶显示面板，设置在所述保护盖板的一侧；\n\n[0009]背光模组，设置在所述液晶显示面板远离所述保护盖板的一侧，包括发射背光的第一光源、提供指纹识别信号的第二光源和指纹传感器；\n\n[0010]其中，所述背光模组还包括背光驱动芯片和指纹识别芯片，所述背光驱动芯片用于驱动所述第一光源，所述指纹识别芯片用于驱动所述第二光源和调节所述指纹识别信号光的强度。\n\n[0011]在一些实施例中，所述背光模组还包括第一柔性电路板和第二柔性电路板，所述第一柔性电路板连接所述第一光源，所述第二柔性电路板连接所述第二光源和所述指纹传感器。\n\n[0012]在一些实施例中，所述第二光源位于所述指纹传感器的一侧。\n\n[0013]在一些实施例中，所述第二光源位于所述指纹传感器的两侧。\n\n[0014]在一些实施例中，所述第二光源位于所述指纹传感器的四周。\n\n[0015]在一些实施例中，所述第一光源包括小型有机发光二极管和微型有机发光二极管中的一种。\n\n[0016]在一些实施例中，所述第一光源在所述第一柔性电路板上等距排布。\n\n[0017]在一些实施例中，所述第二光源包括小型有机发光二极管和微型有机发光二极管中的一种。\n\n[0018]在一些实施例中，所述第二光源在所述第二柔性电路板上等距排布。\n\n[0019]在一些实施例中，所述液晶显示装置还包含反射区，所述第二光源发射的信号经过所述背光模组和所述液晶显示面板到达所述反射区，所述信号在所述反射区反射后，穿过所述液晶显示面板和所述背光模组到达指纹传感器。\n\n[0020]本申请公开了一种液晶显示装置，所述液晶显示装置包括层叠设置的保护盖板、液晶显示面板、背光模组；其中，背光模组包括发射背光的第一光源、提供指纹识别信号的第二光源、指纹传感器、背光驱动芯片和指纹识别芯片，背光驱动芯片用于驱动第一光源，指纹识别芯片用于驱动第二光源和调节指纹识别信号光的强度。通过将第一光源和第二光源设置在背光模组内，节省了液晶显示装置的面积，在不增加液晶显示装置下边框及不损失面板透过率的情况下，将指纹识别光源合理放置。\n\n附图说明\n\n[0021]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0022]图1为现有技术中的液晶显示装置的剖面示意图；\n\n[0023]图2为本申请实施例提供的液晶显示装置的剖面示意图；\n\n[0024]图3为本申请实施例提供的液晶显示装置的平面示意图；\n\n[0025]图4为本申请实施提供的液晶显示装置在进行指纹识别过程中的光线传输示意图。\n\n[0026]图5为本申请实施例提供的控制系统的结构示意图。\n\n具体实施方式\n\n[0027]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0028]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0029]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0030]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0031]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0032]如图1所示，为现有屏下指纹识别技术中的液晶显示装置，所述液晶显示装置包括层叠设置的反射膜100、扩散片110、下增光片120、上增光片130、液晶显示面板140和触控面板160，其中，所述触控面板在下边框内设置有红外LED灯150，所述显示面板140包括指纹识别区域A1，在所述指纹识别区域内，所述反射膜100在远离所述显示面板140的一侧设置有增光模组170和指纹识别模组180，所述指纹识别模组180设置在所述增光模组170远离所述显示面板140的一侧。当手指触碰到指纹识别区域时，红外LED灯发出红外光用于提供指纹识别信号，所述红外光在所述触控面板160的指纹识别区域A1内对手指进行指纹反射，传输到增光模组170形成指纹识别信息，所述指纹识别信息经过增光模组传输给指纹识别模组，用于指纹识别。现有技术中，红外LED灯150放置在下边框延伸的方向，增光模组160和指纹识别模组170层叠设置，这无疑会增加液晶显示装置的下边框和液晶显示装置的厚度，与液晶显示装置屏窄边框、高利用率的发展趋势相悖。\n\n[0033]因此，现有的液晶显示装置存在红外信号灯和增光模组设置不当，导致液晶显示装置下边框增大厚度增加的问题。设置在下边框内，增加了下边框的面积，违背了主流液晶显示模组减少下边框的趋势。\n\n[0034]如图2所示，本申请提供的液晶显示装置的剖面示意图，所述液晶显示装置包括层叠设置的保护盖板、触控面板140、液晶显示面板130、背光模组，所述背光模组包括屏蔽面板120、增光片110、扩散片100、柔性电路板(包括第一柔性电路板171和第二柔性电路板172)、光源150、指纹传感器160。其中，所述光源150包括第一光源和第二光源，所述第一光源用于发射背光，所述第二光源用于提供指纹识别信号。通过将第一光源和第二光源设置在背光模组内，减少了液晶显示装置的厚度，在不增加液晶显示装置下边框及不损失面板透过率的情况下，将指纹识别光源合理放置。\n\n[0035]在一些实施例中，所述液晶显示装置还包括反射区180，所述第二光源发射的信号经过所述背光模组和所述液晶显示面板130、触控面板140到达所述反射区180，所述信号在所述反射区180反射后，穿过所述液晶显示面板和所述背光模组到达指纹传感器160。\n\n[0036]如图3所示，在一些实施例中，所述光源150包括小型有机发光二极管和微型有机发光二极管中的一种，所述第一光源发射可见光，所述第二光源发射不可见光，所述不可见光一般为红外光，一般人的眼睛可以感知的电磁波的波长在400到700纳米之间，采用不可见光是为了提供图像传感器的识别信号。所述光源在所述电路板上等距设置，所述距离一般为4至6微米。\n\n[0037]在一些实施例中，所述第二光源位于所述指纹传感器160的一侧。\n\n[0038]在一些实施例中，所述第二光源位于所述指纹传感器160的两侧。\n\n[0039]在一些实施例中，所述第二光源位于指纹传感器160的四周。\n\n[0040]在一些实施例中，所述指纹传感器160为图像传感器，能够将感受到的光的变化转化为电信号传输给芯片，所述图像传感器设置在阵列基板中，所述感应光分为可见光和不可见光，所述不可见光用于识别指纹，所述可见光用于液晶显示面板呈现图像。\n\n[0041]在一些实施例中，所述柔性电路板包括第一柔性电路板171和第二柔性电路板172，所述第一柔性电路板171包括背光驱动芯片，所述背光驱动芯片连接所述第一光源，用于驱动所述第一光源发射背光，所述第二柔性电路板包括指纹识别芯片，所述指纹识别芯片连接所述第二光源和所述指纹传感器，所述指纹识别芯片用于驱动所述第二光源和调节所述指纹识别信号光的强度。\n\n[0042]在一些实施例中，所述液晶显示面板在指纹识别区域加入控光膜，用以区分指纹识别光线和正常的显示光线，并且将图像传感器设置为仅能识别不可见信号灯，如此设计使得不可见光只能通过设置于小孔层内的小孔传递至所述图像传感器，从而提高指纹识别信号的信噪比。\n\n[0043]在一些实施例中，当用户进行存储指纹时，手指按压液晶显示模组屏幕时，手指折射红外光线传输给图像传感器，所述图像传感器根据接收的红外线光形成指纹图案，并传输给指纹识别芯片，所述指纹芯片对所述图案进行分析，提出特征值，存储在芯片中。\n\n[0044]在一些实施例中，当用户进行解锁时，手指按压液晶显示模组屏幕时，指纹识别芯片驱动第二光源发射红外光线，手指折射红外光线传输给图像传感器，所述图像传感器根据接收的红外线光形成指纹图案，并传输给指纹识别芯片，所述指纹识别芯片对所述图案进行分析，提出特征值，与存储在芯片中的指纹进行对比，若特征值对比结果大于百分之七十，则芯片向液晶显示模组发送解锁成功指令，反之，则发送解锁失败。\n\n[0045]同时在本申请提供的显示装置中，所述液晶显示模组包括多个处理器(处理器可以包括但不限于微处理器MCU或可编程逻辑器件FPGA等的处理装置)和用于存储数据的存储器。\n\n[0046]图4为光源的反射路径。如图4所示，第二光源在指纹识别芯片的驱动下发出红外光，所述红外光透过背光模组、液晶显示面板和触控面板到达指纹识别区域。在指纹识别区域内，经过手指指纹图案反射后形成带有指纹信息的光信号，所述光信号穿过触控面板、液晶显示面板和背光模组的膜层后到达指纹传感器，所述指纹传感器将感受的光信号转化为电信号，并传输给指纹识别芯片。\n\n[0047]在一些实施例中，当用户进行存储指纹时，手指按压液晶显示模组屏幕时，手指折射红外光线传输给图像传感器，所述图像传感器根据接收的红外线光形成指纹图案，并传输给指纹识别芯片，所述指纹芯片对所述图案进行分析，提出特征值，存储在芯片中。\n\n[0048]在一些实施例中，当用户进行解锁时，手指按压液晶显示模组屏幕时，指纹识别芯片驱动第二光源发射红外光线，手指折射红外光线传输给图像传感器，所述图像传感器根据接收的红外线光形成指纹图案，并传输给指纹识别芯片，所述指纹识别芯片对所述图案进行分析，提出特征值，与存储在芯片中的指纹进行对比，若特征值对比结果大于百分之七十，则芯片向液晶显示模组发送解锁成功指令，反正，则发送解锁失败。\n\n[0049]如图5所示，本申请同时提供一种液晶显示装置的控制系统，所述控制系统包括：背光驱动模块10，用于驱动第一光源发光；指纹识别模块20，用于驱动第二光源发光和接受指纹信息进行指纹识别；触控与显示模块30，用于控制触控电路电极侦测手指信号；其中，所述背光模块储存在背光控制芯片中，所述指纹识别模块20储存在指纹识别芯片中，所述触控与显示模块30储存在触控芯片中，所述背光控制芯片、指纹识别芯片和所述触控芯片均由主控平台调动。定义液晶显示面板中用于显示画面和显示指纹识别图标的界面定义为屏幕40。当唤醒屏幕40也就是唤醒液晶显示面板时，背光驱动模块10提供驱动信号使第一光源发光，同时指纹区发光驱动模块20提供驱动信号使第二光源发光；所述第一光源发光保持常亮，用于给屏幕40提供背光源，使得屏幕40显示画面。并且，通过主控平台调整向LCD背光驱动模块提供的驱动信号大小，从而将第一光源11到达屏幕40界面的光线亮度调成一致，使得整个屏幕40亮度均匀。所述指纹区发光驱动模块20向所述第二光源21提供驱动信号，从而控制指纹识别模块发出的红外光的亮度和强度。在液晶显示装置切换到需要进行指纹识别操作的应用显示界面时，屏幕40显示指纹识别图标(icon)，以告诉用户在指纹识别图标位置放置手指指纹。当手指触摸指纹识别图标时，触控电路电极侦测到手指信号并反馈至主控平台；主控平台调整向指纹识别模块20提供的驱动信号，使得第二光源发出的光线亮度增强，从而增强红外射光线信号量，便于增强手指指纹反射回更强的光学反射信号，以利于指纹感应装置22有效的采集带有指纹信息的光学反射信号。\n\n[0050]本发明实施例还提供一种应用于上述电子设备的控制方法。本发明实施例提供的控制方法包括：需要唤醒液晶显示面板时，控制所述背光驱动模块发光，且控制所述第一光源11提供出射光线，点亮液晶显示面板。具体地，采用主控平台控制背光驱动模块10以驱动第一光源11发光，且采用主控平台控制指纹识别模块20以驱动第二光源21发光，且第一光源11和第二光源21保持常亮，以为液晶显示面板提供背光源。本实施例中，液晶显示面板包括用于显示画面和显示指纹识别图标的屏幕；唤醒液晶显示面板时，控制所述第一光源11发出的光线到达所述屏幕的亮度相同，从而使得屏幕的显示亮度均匀，改善显示效果。并且，在点亮液晶显示面板后进行指纹识别，且进行指纹识别过程中第二光源21提供的入射光线强度大于点亮液晶显示面板过程中指纹识别模块提供的出射光线强度，便于光学指纹模块采集带有指纹信息的反射光学信号，以完成指纹识别。\n\n[0051]本实施例中，当一次指纹识别失败时，指纹识别模块提供的入射光线强度保持不变，等待用户第二次进行指纹放置和指纹识别；或者，设置指纹识别等待时间，若在设置的指纹识别等待时间后仍未进行第二次指纹放置，则降低指纹识别模块提供的入射光线强度，使得指纹识别模块提供的入射光线强度与唤醒液晶显示面板时指纹识别模块提供的出射光线强度相同。\n\n[0052]在其他实施例中，当一次指纹识别失败时，还可以增强指纹识别模块提供的入射光线强度，便于提高入射到手指指纹上的入射光线质量以及反射光学信号质量，以便于提高第二次指纹识别的成功率。在完成指纹识别后，液晶显示面板的屏幕显示画面进入其他应用界面，则指纹识别模块提供的出射光线强度降低至唤醒液晶显示面板时指纹识别模块提供的出射光线强度。\n\n[0053]本申请公开了一种液晶显示装置，所述液晶显示装置包括层叠设置的保护盖板、液晶显示面板、背光模组；其中，背光模组包括发射背光的第一光源、提供指纹识别信号的第二光源、指纹传感器、背光驱动芯片和指纹识别芯片，背光驱动芯片用于驱动第一光源，指纹识别芯片用于驱动第二光源和调节指纹识别信号光的强度。通过将第一光源和第二光源设置在背光模组内，减少了液晶显示装置的厚度，在不增加液晶显示装置下边框及不损失面板透过率的情况下，将指纹识别光源合理放置。\n\n[0054]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0055]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0056]以上对本申请实施例所提供的一种液晶显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种液晶显示装置。\n\n背景技术\n\n[0002]屏下指纹识别作为便携电子产品的又一亮点，成为电子行业争相研究及应用的热潮。要实现屏下指纹解锁功能，要在手机屏原来电子元件的基础增加指纹识别的各个模块如连接器、红外信号灯，OLED显示面板由于不受背光限制，对于屏下指纹识别的实现更为容易，而要在液晶显示面板上实现屏下指纹解锁，则要解决背光挖孔、下边框增加等一系列问题。如图1所示，目前已有的液晶显示屏下指纹识别方案是将指纹识别信号灯放置在下边框延伸的方向，这样会增加液晶显示装置的下边框；同时采用增光模组和纹识别模组层叠设置，这无疑会增加液晶显示装置的厚度，与液晶显示装置屏窄边框、高利用率的发展趋势相悖。\n\n[0003]因此，现有的液晶显示装置存在和增光模组设置不当，导致液晶显示装置下边框增大、厚度增加的问题。\n\n发明内容\n\n[0004]本申请实施例提供一种液晶显示装置，可以有效缓解现有技术存在液晶显示装置下边框增大、厚度增加的问题。\n\n[0005]为解决以上问题，本申请提供的技术方案如下：\n\n[0006]本申请提供一种液晶显示装置，包括：\n\n[0007]保护盖板；\n\n[0008]液晶显示面板，设置在所述保护盖板的一侧；\n\n[0009]背光模组，设置在所述液晶显示面板远离所述保护盖板的一侧，包括发射背光的第一光源、提供指纹识别信号的第二光源和指纹传感器；\n\n[0010]其中，所述背光模组还包括背光驱动芯片和指纹识别芯片，所述背光驱动芯片用于驱动所述第一光源，所述指纹识别芯片用于驱动所述第二光源和调节所述指纹识别信号光的强度。\n\n[0011]在一些实施例中，所述背光模组还包括第一柔性电路板和第二柔性电路板，所述第一柔性电路板连接所述第一光源，所述第二柔性电路板连接所述第二光源和所述指纹传感器。\n\n[0012]在一些实施例中，所述第二光源位于所述指纹传感器的一侧。\n\n[0013]在一些实施例中，所述第二光源位于所述指纹传感器的两侧。\n\n[0014]在一些实施例中，所述第二光源位于所述指纹传感器的四周。\n\n[0015]在一些实施例中，所述第一光源包括小型有机发光二极管和微型有机发光二极管中的一种。\n\n[0016]在一些实施例中，所述第一光源在所述第一柔性电路板上等距排布。\n\n[0017]在一些实施例中，所述第二光源包括小型有机发光二极管和微型有机发光二极管中的一种。\n\n[0018]在一些实施例中，所述第二光源在所述第二柔性电路板上等距排布。\n\n[0019]在一些实施例中，所述液晶显示装置还包含反射区，所述第二光源发射的信号经过所述背光模组和所述液晶显示面板到达所述反射区，所述信号在所述反射区反射后，穿过所述液晶显示面板和所述背光模组到达指纹传感器。\n\n[0020]本申请公开了一种液晶显示装置，所述液晶显示装置包括层叠设置的保护盖板、液晶显示面板、背光模组；其中，背光模组包括发射背光的第一光源、提供指纹识别信号的第二光源、指纹传感器、背光驱动芯片和指纹识别芯片，背光驱动芯片用于驱动第一光源，指纹识别芯片用于驱动第二光源和调节指纹识别信号光的强度。通过将第一光源和第二光源设置在背光模组内，节省了液晶显示装置的面积，在不增加液晶显示装置下边框及不损失面板透过率的情况下，将指纹识别光源合理放置。\n\n附图说明\n\n[0021]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0022]图1为现有技术中的液晶显示装置的剖面示意图；\n\n[0023]图2为本申请实施例提供的液晶显示装置的剖面示意图；\n\n[0024]图3为本申请实施例提供的液晶显示装置的平面示意图；\n\n[0025]图4为本申请实施提供的液晶显示装置在进行指纹识别过程中的光线传输示意图。\n\n[0026]图5为本申请实施例提供的控制系统的结构示意图。\n\n具体实施方式\n\n[0027]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0028]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0029]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0030]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0031]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0032]如图1所示，为现有屏下指纹识别技术中的液晶显示装置，所述液晶显示装置包括层叠设置的反射膜100、扩散片110、下增光片120、上增光片130、液晶显示面板140和触控面板160，其中，所述触控面板在下边框内设置有红外LED灯150，所述显示面板140包括指纹识别区域A1，在所述指纹识别区域内，所述反射膜100在远离所述显示面板140的一侧设置有增光模组170和指纹识别模组180，所述指纹识别模组180设置在所述增光模组170远离所述显示面板140的一侧。当手指触碰到指纹识别区域时，红外LED灯发出红外光用于提供指纹识别信号，所述红外光在所述触控面板160的指纹识别区域A1内对手指进行指纹反射，传输到增光模组170形成指纹识别信息，所述指纹识别信息经过增光模组传输给指纹识别模组，用于指纹识别。现有技术中，红外LED灯150放置在下边框延伸的方向，增光模组160和指纹识别模组170层叠设置，这无疑会增加液晶显示装置的下边框和液晶显示装置的厚度，与液晶显示装置屏窄边框、高利用率的发展趋势相悖。\n\n[0033]因此，现有的液晶显示装置存在红外信号灯和增光模组设置不当，导致液晶显示装置下边框增大厚度增加的问题。设置在下边框内，增加了下边框的面积，违背了主流液晶显示模组减少下边框的趋势。\n\n[0034]如图2所示，本申请提供的液晶显示装置的剖面示意图，所述液晶显示装置包括层叠设置的保护盖板、触控面板140、液晶显示面板130、背光模组，所述背光模组包括屏蔽面板120、增光片110、扩散片100、柔性电路板(包括第一柔性电路板171和第二柔性电路板172)、光源150、指纹传感器160。其中，所述光源150包括第一光源和第二光源，所述第一光源用于发射背光，所述第二光源用于提供指纹识别信号。通过将第一光源和第二光源设置在背光模组内，减少了液晶显示装置的厚度，在不增加液晶显示装置下边框及不损失面板透过率的情况下，将指纹识别光源合理放置。\n\n[0035]在一些实施例中，所述液晶显示装置还包括反射区180，所述第二光源发射的信号经过所述背光模组和所述液晶显示面板130、触控面板140到达所述反射区180，所述信号在所述反射区180反射后，穿过所述液晶显示面板和所述背光模组到达指纹传感器160。\n\n[0036]如图3所示，在一些实施例中，所述光源150包括小型有机发光二极管和微型有机发光二极管中的一种，所述第一光源发射可见光，所述第二光源发射不可见光，所述不可见光一般为红外光，一般人的眼睛可以感知的电磁波的波长在400到700纳米之间，采用不可见光是为了提供图像传感器的识别信号。所述光源在所述电路板上等距设置，所述距离一般为4至6微米。\n\n[0037]在一些实施例中，所述第二光源位于所述指纹传感器160的一侧。\n\n[0038]在一些实施例中，所述第二光源位于所述指纹传感器160的两侧。\n\n[0039]在一些实施例中，所述第二光源位于指纹传感器160的四周。\n\n[0040]在一些实施例中，所述指纹传感器160为图像传感器，能够将感受到的光的变化转化为电信号传输给芯片，所述图像传感器设置在阵列基板中，所述感应光分为可见光和不可见光，所述不可见光用于识别指纹，所述可见光用于液晶显示面板呈现图像。\n\n[0041]在一些实施例中，所述柔性电路板包括第一柔性电路板171和第二柔性电路板172，所述第一柔性电路板171包括背光驱动芯片，所述背光驱动芯片连接所述第一光源，用于驱动所述第一光源发射背光，所述第二柔性电路板包括指纹识别芯片，所述指纹识别芯片连接所述第二光源和所述指纹传感器，所述指纹识别芯片用于驱动所述第二光源和调节所述指纹识别信号光的强度。\n\n[0042]在一些实施例中，所述液晶显示面板在指纹识别区域加入控光膜，用以区分指纹识别光线和正常的显示光线，并且将图像传感器设置为仅能识别不可见信号灯，如此设计使得不可见光只能通过设置于小孔层内的小孔传递至所述图像传感器，从而提高指纹识别信号的信噪比。\n\n[0043]在一些实施例中，当用户进行存储指纹时，手指按压液晶显示模组屏幕时，手指折射红外光线传输给图像传感器，所述图像传感器根据接收的红外线光形成指纹图案，并传输给指纹识别芯片，所述指纹芯片对所述图案进行分析，提出特征值，存储在芯片中。\n\n[0044]在一些实施例中，当用户进行解锁时，手指按压液晶显示模组屏幕时，指纹识别芯片驱动第二光源发射红外光线，手指折射红外光线传输给图像传感器，所述图像传感器根据接收的红外线光形成指纹图案，并传输给指纹识别芯片，所述指纹识别芯片对所述图案进行分析，提出特征值，与存储在芯片中的指纹进行对比，若特征值对比结果大于百分之七十，则芯片向液晶显示模组发送解锁成功指令，反之，则发送解锁失败。\n\n[0045]同时在本申请提供的显示装置中，所述液晶显示模组包括多个处理器(处理器可以包括但不限于微处理器MCU或可编程逻辑器件FPGA等的处理装置)和用于存储数据的存储器。\n\n[0046]图4为光源的反射路径。如图4所示，第二光源在指纹识别芯片的驱动下发出红外光，所述红外光透过背光模组、液晶显示面板和触控面板到达指纹识别区域。在指纹识别区域内，经过手指指纹图案反射后形成带有指纹信息的光信号，所述光信号穿过触控面板、液晶显示面板和背光模组的膜层后到达指纹传感器，所述指纹传感器将感受的光信号转化为电信号，并传输给指纹识别芯片。\n\n[0047]在一些实施例中，当用户进行存储指纹时，手指按压液晶显示模组屏幕时，手指折射红外光线传输给图像传感器，所述图像传感器根据接收的红外线光形成指纹图案，并传输给指纹识别芯片，所述指纹芯片对所述图案进行分析，提出特征值，存储在芯片中。\n\n[0048]在一些实施例中，当用户进行解锁时，手指按压液晶显示模组屏幕时，指纹识别芯片驱动第二光源发射红外光线，手指折射红外光线传输给图像传感器，所述图像传感器根据接收的红外线光形成指纹图案，并传输给指纹识别芯片，所述指纹识别芯片对所述图案进行分析，提出特征值，与存储在芯片中的指纹进行对比，若特征值对比结果大于百分之七十，则芯片向液晶显示模组发送解锁成功指令，反正，则发送解锁失败。\n\n[0049]如图5所示，本申请同时提供一种液晶显示装置的控制系统，所述控制系统包括：背光驱动模块10，用于驱动第一光源发光；指纹识别模块20，用于驱动第二光源发光和接受指纹信息进行指纹识别；触控与显示模块30，用于控制触控电路电极侦测手指信号；其中，所述背光模块储存在背光控制芯片中，所述指纹识别模块20储存在指纹识别芯片中，所述触控与显示模块30储存在触控芯片中，所述背光控制芯片、指纹识别芯片和所述触控芯片均由主控平台调动。定义液晶显示面板中用于显示画面和显示指纹识别图标的界面定义为屏幕40。当唤醒屏幕40也就是唤醒液晶显示面板时，背光驱动模块10提供驱动信号使第一光源发光，同时指纹区发光驱动模块20提供驱动信号使第二光源发光；所述第一光源发光保持常亮，用于给屏幕40提供背光源，使得屏幕40显示画面。并且，通过主控平台调整向LCD背光驱动模块提供的驱动信号大小，从而将第一光源11到达屏幕40界面的光线亮度调成一致，使得整个屏幕40亮度均匀。所述指纹区发光驱动模块20向所述第二光源21提供驱动信号，从而控制指纹识别模块发出的红外光的亮度和强度。在液晶显示装置切换到需要进行指纹识别操作的应用显示界面时，屏幕40显示指纹识别图标(icon)，以告诉用户在指纹识别图标位置放置手指指纹。当手指触摸指纹识别图标时，触控电路电极侦测到手指信号并反馈至主控平台；主控平台调整向指纹识别模块20提供的驱动信号，使得第二光源发出的光线亮度增强，从而增强红外射光线信号量，便于增强手指指纹反射回更强的光学反射信号，以利于指纹感应装置22有效的采集带有指纹信息的光学反射信号。\n\n[0050]本发明实施例还提供一种应用于上述电子设备的控制方法。本发明实施例提供的控制方法包括：需要唤醒液晶显示面板时，控制所述背光驱动模块发光，且控制所述第一光源11提供出射光线，点亮液晶显示面板。具体地，采用主控平台控制背光驱动模块10以驱动第一光源11发光，且采用主控平台控制指纹识别模块20以驱动第二光源21发光，且第一光源11和第二光源21保持常亮，以为液晶显示面板提供背光源。本实施例中，液晶显示面板包括用于显示画面和显示指纹识别图标的屏幕；唤醒液晶显示面板时，控制所述第一光源11发出的光线到达所述屏幕的亮度相同，从而使得屏幕的显示亮度均匀，改善显示效果。并且，在点亮液晶显示面板后进行指纹识别，且进行指纹识别过程中第二光源21提供的入射光线强度大于点亮液晶显示面板过程中指纹识别模块提供的出射光线强度，便于光学指纹模块采集带有指纹信息的反射光学信号，以完成指纹识别。\n\n[0051]本实施例中，当一次指纹识别失败时，指纹识别模块提供的入射光线强度保持不变，等待用户第二次进行指纹放置和指纹识别；或者，设置指纹识别等待时间，若在设置的指纹识别等待时间后仍未进行第二次指纹放置，则降低指纹识别模块提供的入射光线强度，使得指纹识别模块提供的入射光线强度与唤醒液晶显示面板时指纹识别模块提供的出射光线强度相同。\n\n[0052]在其他实施例中，当一次指纹识别失败时，还可以增强指纹识别模块提供的入射光线强度，便于提高入射到手指指纹上的入射光线质量以及反射光学信号质量，以便于提高第二次指纹识别的成功率。在完成指纹识别后，液晶显示面板的屏幕显示画面进入其他应用界面，则指纹识别模块提供的出射光线强度降低至唤醒液晶显示面板时指纹识别模块提供的出射光线强度。\n\n[0053]本申请公开了一种液晶显示装置，所述液晶显示装置包括层叠设置的保护盖板、液晶显示面板、背光模组；其中，背光模组包括发射背光的第一光源、提供指纹识别信号的第二光源、指纹传感器、背光驱动芯片和指纹识别芯片，背光驱动芯片用于驱动第一光源，指纹识别芯片用于驱动第二光源和调节指纹识别信号光的强度。通过将第一光源和第二光源设置在背光模组内，减少了液晶显示装置的厚度，在不增加液晶显示装置下边框及不损失面板透过率的情况下，将指纹识别光源合理放置。\n\n[0054]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0055]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0056]以上对本申请实施例所提供的一种液晶显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10827, 23881, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种背光模组及其制作方法、显示终端。\n\n背景技术\n\n[0002]相较于传统的发光二极管(light emitting diode,LED)背光模组，迷你发光二极管(mini light emitting diode,Mini LED)背光模组采用更加密集的芯片排布方式来减少混光距离，以此大大减少背光模组的厚度，此外将薄膜晶体管阵列基板作为电路板驱动Mini LED发光，可以通过局部调光(local dimming)获得更好的对比度以及高动态范围图像(high dynamic range,HDR)的显示效果。\n\n[0003]现有Mini LED背光模组中需要在薄膜晶体管阵列基板表面制作遮光层以此防止Mini LED发出的光线照射至有源层并影响薄膜晶体管器件的性能，但是目前遮光层材料都为有机材料，硬度低、耐刮性差，使得薄膜晶体管器件层在后续工艺制程中容易被刮擦，并导致薄膜晶体管器件损伤，造成背光模组发光亮度不均的情况发生。\n\n[0004]综上所述，现有Mini LED背光模组存在由于遮光层硬度低、耐刮性差使得薄膜晶体管阵列基板在后续工艺制程中容易被刮擦并导致薄膜晶体管器件损伤，造成背光模组发光亮度不均的问题。故，有必要提供一种背光模组及其制作方法、显示终端来改善这一缺陷。\n\n发明内容\n\n[0005]本揭示实施例提供一种背光模组及其制作方法、显示终端，用于解决现有MiniLED背光模组存在由于遮光层硬度低、耐刮性差使得薄膜晶体管阵列基板在后续工艺制程中容易被刮擦并导致薄膜晶体管器件损伤，造成背光模组发光亮度不均的问题。\n\n[0006]本揭示实施例提供一背光模组，包括：\n\n[0007]基板；\n\n[0008]薄膜晶体管阵列层，设置于所述基板上，包括阵列排布的多个薄膜晶体管，所述薄膜晶体管包括栅极、有源层、源极以及漏极；\n\n[0009]发光元件，设置于所述薄膜晶体管阵列层远离所述基板的一侧上，并与所述薄膜晶体管电性连接；以及\n\n[0010]遮光保护层，设置于所述薄膜晶体管阵列层远离所述基板的一侧上，所述有源层在所述基板上的正投影区域位于所述保护层在所述基板上的正投影区域内；\n\n[0011]其中，所述遮光保护层的材料包括抗眩光材料，所述抗眩光材料内含有无机纳米粒子，用于对所述发光元件射向所述有源层的光线产生漫反射作用，并提高所述遮光保护层的硬度。\n\n[0012]根据本揭示一实施例，所述背光模组包括发光区和围绕所述发光区的非发光区，所述遮光保护层覆盖所述薄膜晶体管阵列层在所述发光区内除所述发光元件以外的其他区域。\n\n[0013]根据本揭示一实施例，所述薄膜晶体管阵列层包括钝化保护层以及设置于所述钝化保护层上的导电电极，所述导电电极用于连接所述发光元件和所述薄膜晶体管，所述遮光保护层设置于所述钝化保护层远离所述基板的一侧上，并且覆盖所述导电电极除与所述发光元件交叠部分以外的其他部分。\n\n[0014]根据本揭示一实施例，所述薄膜晶体管在所述基板上的正投影区域位于所述遮光保护层在所述基板上的正投影区域内。\n\n[0015]根据本揭示一实施例，所述保护层的材料包括SiO2胶体溶液，所述遮光保护层由所述SiO2胶体溶液固化形成。\n\n[0016]根据本揭示一实施例，所述遮光保护层的表面形成有凹凸不平的微结构，用于增强所述遮光保护层表面对于由所述发光元件射向所述有源层的光线的漫反射作用。\n\n[0017]根据本揭示一实施例，所述发光元件包括Mini LED芯片或Micro LED芯片。\n\n[0018]本揭示实施例还提供一种显示终端，包括终端主体、显示面板以及如上述的背光模组，所述显示面板和所述背光模组可拆卸的安装在所述终端主体上，且所述背光模组位于所述显示面板与所述终端主体之间。\n\n[0019]本揭示实施例还提供一种背光模组的制作方法，包括：\n\n[0020]提供基板，在所述基板上形成薄膜晶体管阵列层，所述薄膜晶体管阵列层包括阵列排布的多个薄膜晶体管，所述薄膜晶体管包括栅极、有源层、源极和漏极；\n\n[0021]在所述薄膜晶体管阵列层远离所述基板的一侧上形成图案化的遮光保护层，所述有源层在所述基板上的正投影区域位于所述遮光保护层在所述基板上的正投影区域内；以及\n\n[0022]将多个发光元件转移至所述薄膜晶体管阵列层上。\n\n[0023]根据本揭示一实施例，在所述薄膜晶体管阵列层远离所述基板的一侧上形成图案化的遮光保护层还包括：\n\n[0024]采用喷涂的方式在所述薄膜晶体管阵列层远离所述基板的一侧涂布所述遮光保护材料；\n\n[0025]对所述遮光保护材料进行热固化，以在所述薄膜晶体管阵列层远离所述基板的一侧上形成图案化的遮光保护层。\n\n[0026]本揭示实施例的有益效果：本揭示实施例通过在背光模组的薄膜晶体管阵列层远离基板的一侧上设置保护层，并使有源层在基板上的正投影区域位于保护层在基板上的正投影区域内，遮光保护层的材料包括抗眩光材料，抗眩光材料内含有无机纳米粒子，用于对发光元件射向有源层的光线产生漫反射的作用，并提高遮光保护层的硬度，以此在保护层保护薄膜晶体管阵列层，防止其内部薄膜晶体管器件损伤的同时，还可以阻挡发光元件发出的光线照射至有源层，保证了薄膜晶体管的性能和稳定性。\n\n附图说明\n\n[0027]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是揭示的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0028]图1为本揭示实施例提供的背光模组的结构示意图；\n\n[0029]图2为本揭示实施例提供的显示终端的结构示意图；\n\n[0030]图3为本揭示实施例提供的背光模组的制作方法的流程示意图。\n\n具体实施方式\n\n[0031]以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。\n\n[0032]下面结合附图和具体实施例对本揭示做进一步的说明。\n\n[0033]本揭示实施例提供一种背光模组，下面结合图1进行详细说明。如图1所示，图1为本揭示实施例提供的背光模组10的结构示意，所述背光模组10包括基板11、设置于所述基板11上的薄膜晶体管阵列层12、遮光保护层14以及设置于所述薄膜晶体管阵列层12远离所述基板11一侧上的多个发光元件15，所述薄膜晶体管阵列层12设有多个阵列排布的用于驱动所述发光元件15发光的薄膜晶体管123，所述发光元件15与薄膜晶体管123电性连接。\n\n[0034]遮光保护层14设置于所述薄膜晶体管阵列层12远离基板11的一侧上，遮光保护层14的材料包括抗眩光材料，所述抗眩光材料内含有无机纳米粒子，可以提高所述遮光保护层的硬度，且所述遮光保护层14的硬度高于有机材料所形成膜层的硬度，以此提高薄膜晶体管阵列层12表面的硬度，防止后续工艺制程对薄膜晶体管阵列层12的刮擦造成内部薄膜晶体管123的损伤。此外，薄膜晶体管123的有源层1232在基板11上的正投影区域位于所述遮光保护层14在基板11上的正投影区域内，以此通过遮光保护层14替代现有技术用于吸收阻挡光线的遮光层或者黑色矩阵，通过遮光保护层14内的抗眩光材料对所述发光元件15射向所述有源层1232的光线产生漫反射的作用，来阻挡发光元件15射向有源层1232的光线，避免光线对有源层1232造成损伤，从而保证薄膜晶体管123的性能以及稳定性。\n\n[0035]具体地，所述遮光保护层14的抗眩光材料为SiO2胶体溶液，所述SiO2胶体溶液由SiO2和1-甲基-2-丙醇、异丙醇、乙醇等溶剂按照一定的比例混合而成，其固化后形成的所述保护层14的硬度高于有机材料，可达7H，能够提供良好的耐划性，从而保护薄膜晶体管123防止其被破坏。当然，在一些实施例中，所述遮光保护层14的材料同样也可以为TiO2胶体溶液等无机纳米粒子胶体溶液，或者其他有机无机纳米复合材料，同样可以实现与上述实施例相同的技术效果，此处不再赘述。\n\n[0036]进一步的，在本揭示实施例中，为使得所述遮光保护层14具有足够用以保护所述薄膜晶体管阵列层防刮伤的硬度，所述遮光保护层14的膜层厚度为3μm。当然，在一些实施例中，为获得更加良好的保护作用，所述遮光保护层14的膜层厚度也可大于3μm，但为考虑到现有成膜工艺制程以及背光模组10的厚度不宜过大，所述遮光保护层14的膜层厚度最大不得超过8μm。\n\n[0037]更进一步的，含有无机纳米粒子的抗眩光材料在固化形成所述遮光保护层14时，在所述遮光保护层14的表面形成有凹凸不平的微结构(图中未示出)，凹凸不平的微结构增大了遮光保护层14远离所述薄膜晶体管阵列层12一侧的表面的粗糙度，从而增强所述遮光保护层14表面对于所述发光元件15射向所述有源层1232的光线的散射以及漫反射作用，防止发光器件15发出的光线照射至有源层1232，可进一步保证薄膜晶体管123的性能以及稳定性。\n\n[0038]在本揭示实施例中，所述薄膜晶体管阵列层12还包括层叠设置于所述基板11上的栅极绝缘层121、钝化保护层122，以及设置于钝化保护层122上的图案化的电极层13，所述电极层13包括多个导电电极131，所述导电电极131分别连接所述薄膜晶体管123的漏极1234和发光元件15。当然，在一些实施例中，发光元件15也可以直接与薄膜晶体管123的源极1233或者漏极1234连接，发光元件15与薄膜晶体管123的具体连接方式可以根据实际情况进行选择，此处不做限制。\n\n[0039]进一步的，所述发光元件15阵列排布于所述薄膜晶体管阵列层12上，薄膜晶体管123与发光元件15对应设置，每个薄膜晶体管123可以驱动一个或者多个发光元件15。当然，在一些实施例中，所述发光元件15也可以以其他方式排布于薄膜晶体管阵列基板12上，此处不做限制。\n\n[0040]具体地，在本揭示实施例中所述发光元件15为Mini LED芯片，本揭示实施例所提供的背光模组以阵列排布的Mini LED芯片作为光源，通过薄膜晶体管驱动Mini LED芯片发光。当然，在其他的实施例中，所述发光元件15也可以为Micro LED芯片，也可以通过薄膜晶体管驱动其发光用于提供光源，上述种类可以根据实际需求进行选择设置，此处不做限制。\n\n[0041]如图2所示，图2为本揭示实施例提供的显示终端的结构示意图，所述背光模组10包括发光区A1和围绕所述发光区A1的非发光区A2，所述发光区A1对应显示面板20的显示区。在本揭示实施例中，所述遮光保护层14覆盖所述薄膜晶体管阵列层12在所述发光区A1内除所述发光元件15以外的其他区域，以此在防止薄膜晶体管阵列层由于后续工艺导致薄膜晶体管损伤的同时，还可以替代原有的用于吸收以及阻挡光线的遮光层或者黑色矩阵，保证位于发光区A1内的薄膜晶体管的性能以及稳定性。当然，在一些实施例中，所述遮光保护层14也可以覆盖所述发光区A1以及非发光区A2，同样也可以起到类似的保护以及遮光效果，此处不做限制。\n\n[0042]进一步的，如图1所示，在显示区A1内，遮光保护层14设置于钝化保护层122远离基板11的一侧上，同时延伸至导电电极131上并覆盖导电电极131除与发光元件15交叠重合部分以外的其他部分，以此获得更好的保护以及遮光的效果。\n\n[0043]更进一步的，如图1所示，薄膜晶体管123在基板11上的正投影区域位于所述遮光保护层14在基板11上的正投影区域内，通过遮光保护层14覆盖薄膜晶体管123，可以阻挡发光元件15射向整个薄膜晶体管123的光线，更加全面的保护有源层1232不受光线照射影响，保证了薄膜晶体管123的性能以及稳定性。\n\n[0044]本揭示实施例的有益效果：本揭示实施例通过在背光模组的薄膜晶体管阵列层远离基板的一侧上设置保护层，并使有源层在基板上的正投影区域位于保护层在基板上的正投影区域内，以此在保护层保护薄膜晶体管阵列层，防止其内部薄膜晶体管器件损伤的同时，还可以阻挡发光元件发出的光线照射至有源层，保证了薄膜晶体管的性能和稳定性。\n\n[0045]本揭示实施例提供一种显示终端100，如图2所示，图2为本揭示实施例提供的显示终端100的结构示意图，所述显示终端100包括终端主体30、显示面板20以及背光模组10，所述显示面板20和所述背光模组10可拆卸的安装在所述终端主体30上并与所述终端主体30结合为一体，且所述背光模组10位于所述显示面板20与所述终端主体30之间。所述显示面板20为现有技术中的液晶显示面板，包括相对设置的阵列基板21和彩膜基板22以及设置于所述阵列基板21与所述彩膜基板22之间的液晶层23，当然所述显示面板也可以为阵列基板上彩色滤光片(color filter on array,COA)结构的液晶显示面板。所述背光模组10为上述实施例所提供的背光模组，且本揭示实施例所提供的显示终端100能够实现与上述实施例所提供的背光模组相同的技术效果，此处不再赘述。\n\n[0046]本揭示实施例还提供一种背光模组的制作方法，下面结合图2和图3进行详细说明如图3所示，图3为本揭示实施例提供的背光模组制作方法的流程示意图，所述制作方法包括：\n\n[0047]步骤S1：如图3中3a所示，提供基板11，在所述基板11上形成薄膜晶体管阵列层12，所述薄膜晶体管阵列层12包括位于所述基板11上的栅极1231、栅极绝缘层121、有源层1232、源极1233、漏极1234、钝化保护层122以及电极层13。形成所述薄膜晶体管阵列层12的方法与现有技术的方法相同，此处不再赘述。\n\n[0048]步骤S2：如图3中3b所示，在所述薄膜晶体管阵列层12远离所述基板11的一侧上形成图案化的遮光保护层14，所述有源层1232在基板11上的正投影区域位于所述遮光保护层14在基板11上的正投影区域内。\n\n[0049]步骤S3：如图3中3c所示，将多个发光元件15转移至所述薄膜晶体管阵列层12上。\n\n[0050]具体地，所述背光模组10包括发光区A1和围绕所述发光区A1的非发光区A2，步骤S2中，涂布所述保护材料的区域为所述薄膜晶体管阵列层12在所述发光区A1内除所述发光元件15以外的其他区域，以此形成图案化的遮光保护层14，所述图案化的遮光保护层14暴露出电极层13中部分所述导电电极131，步骤S3中，发光元件13设置于暴露的所述导电电极的位置处，并通过导电电极131与薄膜晶体管123连接。\n\n[0051]在本揭示实施例中，所述步骤S2中形成所述遮光保护层14的步骤包括：\n\n[0052]步骤S201：采用喷涂的方式在所述薄膜晶体管阵列层远离所述基板的一侧涂布遮光保护材料；\n\n[0053]步骤S202：对所述遮光保护材料进行热固化，以在所述薄膜晶体管阵列层远离所述基板的一侧上形成图案化的遮光保护层。\n\n[0054]具体地，步骤S201中采用喷涂的方法直接可以将保护材料图案化的喷涂于薄膜晶体管阵列层上，当然，在一些实施例中，也可以通过蒸镀或者黄光制程的方法形成图案化的保护层14，可以根据实际情况进行选择，此处不做限制。\n\n[0055]步骤S202中，固化所述遮光保护材料的方法为热固化，需要在180℃的条件下固化2小时，以形成所述遮光保护层14。\n\n[0056]在本揭示实施例中，所述遮光保护材料包括抗眩光材料，所述抗眩光材料内含有无机纳米粒子，可以提高所述遮光保护层的硬度，且所述遮光保护层14的硬度高于有机材料所形成膜层的硬度，以此提高薄膜晶体管阵列层12表面的硬度，防止后续工艺制程对薄膜晶体管阵列层12的刮擦造成内部薄膜晶体管123的损伤。此外，薄膜晶体管123的有源层1232在基板11上的正投影区域位于所述遮光保护层14在基板11上的正投影区域内，以此通过遮光保护层14替代现有技术用于吸收阻挡光线的遮光层或者黑色矩阵，通过遮光保护层14内的抗眩光材料对所述发光元件15射向所述有源层1232的光线产生漫反射的作用，来阻挡发光元件15射向有源层1232的光线，避免光线对有源层1232造成损伤，从而保证薄膜晶体管123的性能以及稳定性。\n\n[0057]具体地，所述抗眩光材料为SiO2胶体材料，所述SiO2胶体材料由SiO2和1-甲基-2-丙醇、异丙醇、乙醇等溶剂按照一定的比例混合而成，其固化后形成的所述遮光保护层14的硬度高于有机材料，可达7H，能够提供良好的耐划性，从而保护薄膜晶体管123防止其被破坏。同时，由SiO2胶体材料固化所形成的遮光保护层14的表面并不是平整的面，其对光线具有良好的散射和漫反射的作用，可有效阻挡发光元件15射向有源层1232的光线，以此保证薄膜晶体管123的性能以及稳定性。\n\n[0058]为使得所述遮光保护层14具有足够用以保护所述薄膜晶体管阵列层防刮伤的硬度，所述遮光保护层14的膜层厚度为3μm。当然，在一些实施例中，为获得更加良好的保护作用，所述遮光保护层14的膜层厚度也可大于3μm，但为考虑到现有成膜工艺制程以及背光模组10的厚度不宜过大，所述保护层14的膜层厚度最大不得超过8μm。\n\n[0059]本揭示实施例的有益效果：本揭示实施例提供的背光模组的制作方法，通过在薄膜晶体管阵列层远离基板的一侧上形成图案化的保护层，并使有源层在基板上的正投影区域位于保护层在基板上的正投影区域内，以此在保护层保护薄膜晶体管阵列层，防止其内部薄膜晶体管器件损伤的同时，还可以阻挡发光元件发出的光线照射至有源层，保证了薄膜晶体管的性能和稳定性。\n\n[0060]综上所述，虽然本揭示以优选实施例揭露如上，但上述优选实施例并非用以限制本揭示，本领域的普通技术人员，在不脱离本揭示的精神和范围内，均可作各种更动与润饰，因此本揭示的保护范围以权利要求界定的范围为基准。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种背光模组及其制作方法、显示终端。\n\n背景技术\n\n[0002]相较于传统的发光二极管(light emitting diode,LED)背光模组，迷你发光二极管(mini light emitting diode,Mini LED)背光模组采用更加密集的芯片排布方式来减少混光距离，以此大大减少背光模组的厚度，此外将薄膜晶体管阵列基板作为电路板驱动Mini LED发光，可以通过局部调光(local dimming)获得更好的对比度以及高动态范围图像(high dynamic range,HDR)的显示效果。\n\n[0003]现有Mini LED背光模组中需要在薄膜晶体管阵列基板表面制作遮光层以此防止Mini LED发出的光线照射至有源层并影响薄膜晶体管器件的性能，但是目前遮光层材料都为有机材料，硬度低、耐刮性差，使得薄膜晶体管器件层在后续工艺制程中容易被刮擦，并导致薄膜晶体管器件损伤，造成背光模组发光亮度不均的情况发生。\n\n[0004]综上所述，现有Mini LED背光模组存在由于遮光层硬度低、耐刮性差使得薄膜晶体管阵列基板在后续工艺制程中容易被刮擦并导致薄膜晶体管器件损伤，造成背光模组发光亮度不均的问题。故，有必要提供一种背光模组及其制作方法、显示终端来改善这一缺陷。\n\n发明内容\n\n[0005]本揭示实施例提供一种背光模组及其制作方法、显示终端，用于解决现有MiniLED背光模组存在由于遮光层硬度低、耐刮性差使得薄膜晶体管阵列基板在后续工艺制程中容易被刮擦并导致薄膜晶体管器件损伤，造成背光模组发光亮度不均的问题。\n\n[0006]本揭示实施例提供一背光模组，包括：\n\n[0007]基板；\n\n[0008]薄膜晶体管阵列层，设置于所述基板上，包括阵列排布的多个薄膜晶体管，所述薄膜晶体管包括栅极、有源层、源极以及漏极；\n\n[0009]发光元件，设置于所述薄膜晶体管阵列层远离所述基板的一侧上，并与所述薄膜晶体管电性连接；以及\n\n[0010]遮光保护层，设置于所述薄膜晶体管阵列层远离所述基板的一侧上，所述有源层在所述基板上的正投影区域位于所述保护层在所述基板上的正投影区域内；\n\n[0011]其中，所述遮光保护层的材料包括抗眩光材料，所述抗眩光材料内含有无机纳米粒子，用于对所述发光元件射向所述有源层的光线产生漫反射作用，并提高所述遮光保护层的硬度。\n\n[0012]根据本揭示一实施例，所述背光模组包括发光区和围绕所述发光区的非发光区，所述遮光保护层覆盖所述薄膜晶体管阵列层在所述发光区内除所述发光元件以外的其他区域。\n\n[0013]根据本揭示一实施例，所述薄膜晶体管阵列层包括钝化保护层以及设置于所述钝化保护层上的导电电极，所述导电电极用于连接所述发光元件和所述薄膜晶体管，所述遮光保护层设置于所述钝化保护层远离所述基板的一侧上，并且覆盖所述导电电极除与所述发光元件交叠部分以外的其他部分。\n\n[0014]根据本揭示一实施例，所述薄膜晶体管在所述基板上的正投影区域位于所述遮光保护层在所述基板上的正投影区域内。\n\n[0015]根据本揭示一实施例，所述保护层的材料包括SiO2胶体溶液，所述遮光保护层由所述SiO2胶体溶液固化形成。\n\n[0016]根据本揭示一实施例，所述遮光保护层的表面形成有凹凸不平的微结构，用于增强所述遮光保护层表面对于由所述发光元件射向所述有源层的光线的漫反射作用。\n\n[0017]根据本揭示一实施例，所述发光元件包括Mini LED芯片或Micro LED芯片。\n\n[0018]本揭示实施例还提供一种显示终端，包括终端主体、显示面板以及如上述的背光模组，所述显示面板和所述背光模组可拆卸的安装在所述终端主体上，且所述背光模组位于所述显示面板与所述终端主体之间。\n\n[0019]本揭示实施例还提供一种背光模组的制作方法，包括：\n\n[0020]提供基板，在所述基板上形成薄膜晶体管阵列层，所述薄膜晶体管阵列层包括阵列排布的多个薄膜晶体管，所述薄膜晶体管包括栅极、有源层、源极和漏极；\n\n[0021]在所述薄膜晶体管阵列层远离所述基板的一侧上形成图案化的遮光保护层，所述有源层在所述基板上的正投影区域位于所述遮光保护层在所述基板上的正投影区域内；以及\n\n[0022]将多个发光元件转移至所述薄膜晶体管阵列层上。\n\n[0023]根据本揭示一实施例，在所述薄膜晶体管阵列层远离所述基板的一侧上形成图案化的遮光保护层还包括：\n\n[0024]采用喷涂的方式在所述薄膜晶体管阵列层远离所述基板的一侧涂布所述遮光保护材料；\n\n[0025]对所述遮光保护材料进行热固化，以在所述薄膜晶体管阵列层远离所述基板的一侧上形成图案化的遮光保护层。\n\n[0026]本揭示实施例的有益效果：本揭示实施例通过在背光模组的薄膜晶体管阵列层远离基板的一侧上设置保护层，并使有源层在基板上的正投影区域位于保护层在基板上的正投影区域内，遮光保护层的材料包括抗眩光材料，抗眩光材料内含有无机纳米粒子，用于对发光元件射向有源层的光线产生漫反射的作用，并提高遮光保护层的硬度，以此在保护层保护薄膜晶体管阵列层，防止其内部薄膜晶体管器件损伤的同时，还可以阻挡发光元件发出的光线照射至有源层，保证了薄膜晶体管的性能和稳定性。\n\n附图说明\n\n[0027]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是揭示的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0028]图1为本揭示实施例提供的背光模组的结构示意图；\n\n[0029]图2为本揭示实施例提供的显示终端的结构示意图；\n\n[0030]图3为本揭示实施例提供的背光模组的制作方法的流程示意图。\n\n具体实施方式\n\n[0031]以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。\n\n[0032]下面结合附图和具体实施例对本揭示做进一步的说明。\n\n[0033]本揭示实施例提供一种背光模组，下面结合图1进行详细说明。如图1所示，图1为本揭示实施例提供的背光模组10的结构示意，所述背光模组10包括基板11、设置于所述基板11上的薄膜晶体管阵列层12、遮光保护层14以及设置于所述薄膜晶体管阵列层12远离所述基板11一侧上的多个发光元件15，所述薄膜晶体管阵列层12设有多个阵列排布的用于驱动所述发光元件15发光的薄膜晶体管123，所述发光元件15与薄膜晶体管123电性连接。\n\n[0034]遮光保护层14设置于所述薄膜晶体管阵列层12远离基板11的一侧上，遮光保护层14的材料包括抗眩光材料，所述抗眩光材料内含有无机纳米粒子，可以提高所述遮光保护层的硬度，且所述遮光保护层14的硬度高于有机材料所形成膜层的硬度，以此提高薄膜晶体管阵列层12表面的硬度，防止后续工艺制程对薄膜晶体管阵列层12的刮擦造成内部薄膜晶体管123的损伤。此外，薄膜晶体管123的有源层1232在基板11上的正投影区域位于所述遮光保护层14在基板11上的正投影区域内，以此通过遮光保护层14替代现有技术用于吸收阻挡光线的遮光层或者黑色矩阵，通过遮光保护层14内的抗眩光材料对所述发光元件15射向所述有源层1232的光线产生漫反射的作用，来阻挡发光元件15射向有源层1232的光线，避免光线对有源层1232造成损伤，从而保证薄膜晶体管123的性能以及稳定性。\n\n[0035]具体地，所述遮光保护层14的抗眩光材料为SiO2胶体溶液，所述SiO2胶体溶液由SiO2和1-甲基-2-丙醇、异丙醇、乙醇等溶剂按照一定的比例混合而成，其固化后形成的所述保护层14的硬度高于有机材料，可达7H，能够提供良好的耐划性，从而保护薄膜晶体管123防止其被破坏。当然，在一些实施例中，所述遮光保护层14的材料同样也可以为TiO2胶体溶液等无机纳米粒子胶体溶液，或者其他有机无机纳米复合材料，同样可以实现与上述实施例相同的技术效果，此处不再赘述。\n\n[0036]进一步的，在本揭示实施例中，为使得所述遮光保护层14具有足够用以保护所述薄膜晶体管阵列层防刮伤的硬度，所述遮光保护层14的膜层厚度为3μm。当然，在一些实施例中，为获得更加良好的保护作用，所述遮光保护层14的膜层厚度也可大于3μm，但为考虑到现有成膜工艺制程以及背光模组10的厚度不宜过大，所述遮光保护层14的膜层厚度最大不得超过8μm。\n\n[0037]更进一步的，含有无机纳米粒子的抗眩光材料在固化形成所述遮光保护层14时，在所述遮光保护层14的表面形成有凹凸不平的微结构(图中未示出)，凹凸不平的微结构增大了遮光保护层14远离所述薄膜晶体管阵列层12一侧的表面的粗糙度，从而增强所述遮光保护层14表面对于所述发光元件15射向所述有源层1232的光线的散射以及漫反射作用，防止发光器件15发出的光线照射至有源层1232，可进一步保证薄膜晶体管123的性能以及稳定性。\n\n[0038]在本揭示实施例中，所述薄膜晶体管阵列层12还包括层叠设置于所述基板11上的栅极绝缘层121、钝化保护层122，以及设置于钝化保护层122上的图案化的电极层13，所述电极层13包括多个导电电极131，所述导电电极131分别连接所述薄膜晶体管123的漏极1234和发光元件15。当然，在一些实施例中，发光元件15也可以直接与薄膜晶体管123的源极1233或者漏极1234连接，发光元件15与薄膜晶体管123的具体连接方式可以根据实际情况进行选择，此处不做限制。\n\n[0039]进一步的，所述发光元件15阵列排布于所述薄膜晶体管阵列层12上，薄膜晶体管123与发光元件15对应设置，每个薄膜晶体管123可以驱动一个或者多个发光元件15。当然，在一些实施例中，所述发光元件15也可以以其他方式排布于薄膜晶体管阵列基板12上，此处不做限制。\n\n[0040]具体地，在本揭示实施例中所述发光元件15为Mini LED芯片，本揭示实施例所提供的背光模组以阵列排布的Mini LED芯片作为光源，通过薄膜晶体管驱动Mini LED芯片发光。当然，在其他的实施例中，所述发光元件15也可以为Micro LED芯片，也可以通过薄膜晶体管驱动其发光用于提供光源，上述种类可以根据实际需求进行选择设置，此处不做限制。\n\n[0041]如图2所示，图2为本揭示实施例提供的显示终端的结构示意图，所述背光模组10包括发光区A1和围绕所述发光区A1的非发光区A2，所述发光区A1对应显示面板20的显示区。在本揭示实施例中，所述遮光保护层14覆盖所述薄膜晶体管阵列层12在所述发光区A1内除所述发光元件15以外的其他区域，以此在防止薄膜晶体管阵列层由于后续工艺导致薄膜晶体管损伤的同时，还可以替代原有的用于吸收以及阻挡光线的遮光层或者黑色矩阵，保证位于发光区A1内的薄膜晶体管的性能以及稳定性。当然，在一些实施例中，所述遮光保护层14也可以覆盖所述发光区A1以及非发光区A2，同样也可以起到类似的保护以及遮光效果，此处不做限制。\n\n[0042]进一步的，如图1所示，在显示区A1内，遮光保护层14设置于钝化保护层122远离基板11的一侧上，同时延伸至导电电极131上并覆盖导电电极131除与发光元件15交叠重合部分以外的其他部分，以此获得更好的保护以及遮光的效果。\n\n[0043]更进一步的，如图1所示，薄膜晶体管123在基板11上的正投影区域位于所述遮光保护层14在基板11上的正投影区域内，通过遮光保护层14覆盖薄膜晶体管123，可以阻挡发光元件15射向整个薄膜晶体管123的光线，更加全面的保护有源层1232不受光线照射影响，保证了薄膜晶体管123的性能以及稳定性。\n\n[0044]本揭示实施例的有益效果：本揭示实施例通过在背光模组的薄膜晶体管阵列层远离基板的一侧上设置保护层，并使有源层在基板上的正投影区域位于保护层在基板上的正投影区域内，以此在保护层保护薄膜晶体管阵列层，防止其内部薄膜晶体管器件损伤的同时，还可以阻挡发光元件发出的光线照射至有源层，保证了薄膜晶体管的性能和稳定性。\n\n[0045]本揭示实施例提供一种显示终端100，如图2所示，图2为本揭示实施例提供的显示终端100的结构示意图，所述显示终端100包括终端主体30、显示面板20以及背光模组10，所述显示面板20和所述背光模组10可拆卸的安装在所述终端主体30上并与所述终端主体30结合为一体，且所述背光模组10位于所述显示面板20与所述终端主体30之间。所述显示面板20为现有技术中的液晶显示面板，包括相对设置的阵列基板21和彩膜基板22以及设置于所述阵列基板21与所述彩膜基板22之间的液晶层23，当然所述显示面板也可以为阵列基板上彩色滤光片(color filter on array,COA)结构的液晶显示面板。所述背光模组10为上述实施例所提供的背光模组，且本揭示实施例所提供的显示终端100能够实现与上述实施例所提供的背光模组相同的技术效果，此处不再赘述。\n\n[0046]本揭示实施例还提供一种背光模组的制作方法，下面结合图2和图3进行详细说明如图3所示，图3为本揭示实施例提供的背光模组制作方法的流程示意图，所述制作方法包括：\n\n[0047]步骤S1：如图3中3a所示，提供基板11，在所述基板11上形成薄膜晶体管阵列层12，所述薄膜晶体管阵列层12包括位于所述基板11上的栅极1231、栅极绝缘层121、有源层1232、源极1233、漏极1234、钝化保护层122以及电极层13。形成所述薄膜晶体管阵列层12的方法与现有技术的方法相同，此处不再赘述。\n\n[0048]步骤S2：如图3中3b所示，在所述薄膜晶体管阵列层12远离所述基板11的一侧上形成图案化的遮光保护层14，所述有源层1232在基板11上的正投影区域位于所述遮光保护层14在基板11上的正投影区域内。\n\n[0049]步骤S3：如图3中3c所示，将多个发光元件15转移至所述薄膜晶体管阵列层12上。\n\n[0050]具体地，所述背光模组10包括发光区A1和围绕所述发光区A1的非发光区A2，步骤S2中，涂布所述保护材料的区域为所述薄膜晶体管阵列层12在所述发光区A1内除所述发光元件15以外的其他区域，以此形成图案化的遮光保护层14，所述图案化的遮光保护层14暴露出电极层13中部分所述导电电极131，步骤S3中，发光元件13设置于暴露的所述导电电极的位置处，并通过导电电极131与薄膜晶体管123连接。\n\n[0051]在本揭示实施例中，所述步骤S2中形成所述遮光保护层14的步骤包括：\n\n[0052]步骤S201：采用喷涂的方式在所述薄膜晶体管阵列层远离所述基板的一侧涂布遮光保护材料；\n\n[0053]步骤S202：对所述遮光保护材料进行热固化，以在所述薄膜晶体管阵列层远离所述基板的一侧上形成图案化的遮光保护层。\n\n[0054]具体地，步骤S201中采用喷涂的方法直接可以将保护材料图案化的喷涂于薄膜晶体管阵列层上，当然，在一些实施例中，也可以通过蒸镀或者黄光制程的方法形成图案化的保护层14，可以根据实际情况进行选择，此处不做限制。\n\n[0055]步骤S202中，固化所述遮光保护材料的方法为热固化，需要在180℃的条件下固化2小时，以形成所述遮光保护层14。\n\n[0056]在本揭示实施例中，所述遮光保护材料包括抗眩光材料，所述抗眩光材料内含有无机纳米粒子，可以提高所述遮光保护层的硬度，且所述遮光保护层14的硬度高于有机材料所形成膜层的硬度，以此提高薄膜晶体管阵列层12表面的硬度，防止后续工艺制程对薄膜晶体管阵列层12的刮擦造成内部薄膜晶体管123的损伤。此外，薄膜晶体管123的有源层1232在基板11上的正投影区域位于所述遮光保护层14在基板11上的正投影区域内，以此通过遮光保护层14替代现有技术用于吸收阻挡光线的遮光层或者黑色矩阵，通过遮光保护层14内的抗眩光材料对所述发光元件15射向所述有源层1232的光线产生漫反射的作用，来阻挡发光元件15射向有源层1232的光线，避免光线对有源层1232造成损伤，从而保证薄膜晶体管123的性能以及稳定性。\n\n[0057]具体地，所述抗眩光材料为SiO2胶体材料，所述SiO2胶体材料由SiO2和1-甲基-2-丙醇、异丙醇、乙醇等溶剂按照一定的比例混合而成，其固化后形成的所述遮光保护层14的硬度高于有机材料，可达7H，能够提供良好的耐划性，从而保护薄膜晶体管123防止其被破坏。同时，由SiO2胶体材料固化所形成的遮光保护层14的表面并不是平整的面，其对光线具有良好的散射和漫反射的作用，可有效阻挡发光元件15射向有源层1232的光线，以此保证薄膜晶体管123的性能以及稳定性。\n\n[0058]为使得所述遮光保护层14具有足够用以保护所述薄膜晶体管阵列层防刮伤的硬度，所述遮光保护层14的膜层厚度为3μm。当然，在一些实施例中，为获得更加良好的保护作用，所述遮光保护层14的膜层厚度也可大于3μm，但为考虑到现有成膜工艺制程以及背光模组10的厚度不宜过大，所述保护层14的膜层厚度最大不得超过8μm。\n\n[0059]本揭示实施例的有益效果：本揭示实施例提供的背光模组的制作方法，通过在薄膜晶体管阵列层远离基板的一侧上形成图案化的保护层，并使有源层在基板上的正投影区域位于保护层在基板上的正投影区域内，以此在保护层保护薄膜晶体管阵列层，防止其内部薄膜晶体管器件损伤的同时，还可以阻挡发光元件发出的光线照射至有源层，保证了薄膜晶体管的性能和稳定性。\n\n[0060]综上所述，虽然本揭示以优选实施例揭露如上，但上述优选实施例并非用以限制本揭示，本领域的普通技术人员，在不脱离本揭示的精神和范围内，均可作各种更动与润饰，因此本揭示的保护范围以权利要求界定的范围为基准。');
INSERT INTO `os_patent_instruction_text` VALUES (10828, 23882, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种背光模组及显示装置。\n\n背景技术\n\n[0002]相较于传统侧入式背光模组(BLU)，现阶段mini LED背光模组因其高亮、超窄边框、以及能够分区控光和异形等优势而受到更多的关注；目前业界对小尺寸(如手机)可以一次成型制作，但是受限于设备尺寸，对于中大尺寸的mini LED背光模组只能采取多片拼接的方式来实现更大尺寸。其中，请参阅图1和图2，对传统侧入式背光模组的结构与miniLED背光模组的结构进行比较，其中，图1是传统侧入式背光模组的结构示意图，图2是miniLED背光模组的结构示意图。如图1所示的，所述传统侧入式背光模组包括：依次层叠设置的一背板1、反射层7、基板2、扩散板5及棱镜片6，光源3包括电致发光器件31，所述电致发光器件31设置于所述基板2的侧壁上，所述基板2为PCB基板或FPC基板；如图2所示的，mini LED背光模组包括层叠设置的一背板1；一基板2；设置于所述基板2上的光源层3，所述光源层3包括多个mini LED器件31；设置于所述光源层3并整面覆盖所述mini LED器件31及所述基板2的萤光膜4；设置于所述萤光膜4背离所述背板1一侧的光学膜材，所述光学膜材包括扩散膜5及棱镜片6；其中，所述基板2上设置有金属导电层(未图示)，所述mini LED器件31的电极与所述基板2的金属导电层电连接。\n\n[0003]常见的mini LED背光模组会在LED表面覆盖一层树脂保护层，一种是透明的，后续组装时加上类似量子点膜层(QD film)等色转换膜层变成白光；另外一种是直接在透明树脂中添加黄色荧光粉而制成荧光膜，这样也可以转换成白光；其中，图3为后者呈现的一种结构，具体地，图3是一种mini LED背光模组的拼接示意图。其中，所述mini LED背光模组包括基板层2，所述基板层2包括多个拼接设置的基板20，至少两相邻所述基板20之间存在拼接缝210，其实，不管是透明的或是添加荧光粉的保护胶，最多能覆盖到基板的边界，由于组装拼接工差，所以接缝处没有光线导出(图3中所示的虚线框的区域内)，并且随着背光模组厚度要求越来越薄，如此预留的混光空间(OD)也更加有限，这样就在每片之间接缝处因混光不均从而在视觉上形成暗线，其现象如图4中所示的圆圈内，图4是拼接区域的暗线的效果示意图，如图4所示的，第一基板201、第二基板202之间的拼接缝210处产生暗线。\n\n发明内容\n\n[0004]本申请实施例提供一种背光模组及显示装置，所述背光模组包括基板和设置于所述基板上的复数个发光器件，所述基板具有一中心区域和至少一边缘区域，所述基板具有一连续的第一表面，所述第一表面从所述中心区域延伸至所述边缘区域；并且在所述边缘区域内，所述第一表面包括一延伸面，所述延伸面为所述第一表面在所述边缘区域内偏离所述中心区域而形成的表面；以及在所述延伸面上设置所述发光器件，所述发光器件为mini LED，所述延伸面能够使得所述边缘区域的光线相对于所述中心区域的光线发生偏转并传导至所述边缘区域内，实现改善所述边缘区域的暗线的目的。\n\n[0005]本申请实施例提供一种背光模组，所述背光模组包括：基板以及设置于所述基板上的复数个发光器件，其中，所述基板具有一中心区域和围绕所述中心区域的至少一边缘区域，所述基板还具有一连续的第一表面，所述第一表面从所述中心区域延伸至所述边缘区域，并且，在所述边缘区域内，所述第一表面还包括一延伸面，所述延伸面为所述第一表面在所述边缘区域内偏离所述中心区域而形成的表面。\n\n[0006]在一些实施例中，所述基板在所述边缘区域的厚度小于所述基板在所述中心区域的厚度。\n\n[0007]在一些实施例中，所述基板还具有一连续的第二表面，所述第二表面与所述第一表面相对设置，其中，所述延伸面在从所述中心区域向所述边缘区域延伸的过程中，所述延伸面延伸至与所述第二表面形成一夹角。\n\n[0008]在一些实施例中，所述延伸面为一倾斜面。\n\n[0009]在一些实施例中，所述背光模组还包括一荧光膜，所述萤光膜设置于所述发光器件上且整面覆盖所述发光器件和所述基板。\n\n[0010]在一些实施例中，所述背光模组还包括一扩散膜，所述扩散膜设置于所述萤光膜背离所述基板的一侧。\n\n[0011]在一些实施例中，所述背光模组还包括棱镜膜，所述棱镜膜设置于所述扩散膜背离所述基板的一侧。\n\n[0012]在一些实施例中，所述基板为玻璃基板。\n\n[0013]在一些实施例中，所述发光器件为mini LED。\n\n[0014]本申请实施例还提供一种显示装置，包括如上所述的背光模组，还包括显示面板，其中，所述显示面板包括第一基板、第二基板，以及设置于所述第一基板和所述第二基板之间的液晶层。\n\n[0015]本申请实施例提供的一种背光模组及显示装置，所述背光模组包括基板和设置于所述基板上的复数个发光器件，所述基板具有一中心区域和至少一边缘区域，所述基板具有一连续的第一表面，所述第一表面从所述中心区域延伸至所述边缘区域；并且在所述边缘区域内，所述第一表面包括一延伸面，所述延伸面为所述第一表面在所述边缘区域内偏离所述中心区域而形成的表面；所述基板在所述边缘区域的厚度小于所述基板在所述中心区域的厚度；在所述延伸面上设置所述发光器件，所述发光器件为mini LED，所述延伸面能够使得所述边缘区域的光线相对于所述中心区域的光线发生偏转并传导至所述边缘区域内，实现改善所述边缘区域的暗线的目的。\n\n附图说明\n\n[0016]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0017]图1是传统侧入式背光模组的结构示意图。\n\n[0018]图2是mini LED背光模组的结构示意图。\n\n[0019]图3是一种mini LED背光模组的拼接示意图。\n\n[0020]图4是拼接区域的暗线的效果示意图。\n\n[0021]图5是一种mini LED背光模组的剖面示意图。\n\n[0022]图6是一种mini LED背光模组的拼接效果图。\n\n具体实施方式\n\n[0023]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0024]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0025]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0026]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0027]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0028]请参阅图5和图6，图5是一种mini LED背光模组的剖面示意图；图6是一种miniLED背光模组的拼接效果图。如图5和图6所示的，在本实施例中，提供一种背光模组，包括依次设置的一基板1、设置于所述基板1上的复数个发光器件2、设置于所述复数个发光器件2上且正面覆盖所述发光器件2及所述基板1的萤光膜3，以及设置于所述萤光膜3背离所述基板1一侧的扩散膜4。在本实施例中，所述背光模组还包括一背板，所述背板设置于所述基板1远离所述棱镜膜的一侧。\n\n[0029]如图5所示的，所述基板1具有一中心区域10和围绕所述中心区域10的至少一边缘区域11，所述基板1具有一连续的第一表面12，所述第一表面12从所述中心区域10延伸至所述边缘区域11；且在所述边缘区域11内，所述第一表面12还包括一延伸面13，所述延伸面13为所述第一表面12在所述边缘区域11内偏离所述中心区域10而形成的表面，即，所述第一表面12对应所述中心区域10和所述边缘区域11，所述延伸面13对应所述边缘区域11，所述第一表面12除了所述延伸面13以外的区域定义中心表面14，所述延伸面13与所述中心表面14连接为连续的所述第一表面12。\n\n[0030]如图5所示的，所述基板1还具有一连续的第二表面15，所述第二表面15与所述第一表面12相对设置，其中，所述延伸面13在从所述中心区域10延伸至所述边缘区域11的方向上，所述延伸面13延伸至与所述第二表面15形成一夹角16。\n\n[0031]在本实施例中，所述基板1在所述边缘区域11的厚度小于所述基板1在所述中心区域10的厚度，其中，在从所述中心区域10延伸至所述边缘区域11的方向上，所述基板1的延伸面13距离所述第二表面15的高度逐渐减小。此处需要进行说明的是，作为优选实施方式，所述第二表面15为一平面，所述延伸面13为一倾斜面，所述中心表面14为与所述第二表面15平行设置的平面。\n\n[0032]在本申请所述实施例中，所述边缘区域11在所述基板1的第二表面15上的正投影定义为补光区，所述补光区是出射光线较为暗的区域，即需要进行补偿光线的区域，例如所述补光区也可以是由于所述复数个发光器件2的局部损坏或失效，或者由于所述萤光膜3的不平整而造成的亮度不均的区域。\n\n[0033]在本实施例中，在所述延伸面13上设置有所述发光器件2作为光源；由于所述延伸面13相对于所述第一表面12产生的偏离，所述延伸面13上的所述发光器件2的出光角度相对于所述第一表面12上的所述发光器件2的出光角度发生偏转，使得所述延伸面13上的所述发光器件2的光线均朝向所述补光区的方位偏转，改变传统出光角度，所述延伸面13用于将所述发光器件2的光线传导至所述补光区的扩散膜4(图6中示意)上，所述扩散膜4用于使所述复数个发光器件2的光线均匀射出。\n\n[0034]值得一提的是，在本实施例中，所述基板1为玻璃基板。相较于现有技术中的常规基板，常规基板一般为PCB基板或FPC基板，由于所述PCB基板或所述FPC基板由多层树脂压合而成，无法通过切割、研磨等简单加工工艺制备理想形状，本实施例所述基板1采用玻璃基板，能够取代常规的所述PCB基板及所述FPC基板，能够直接对所述基板1进行切割形成需要的形状，例如通过对所述基板1的第一表面12的至少一个侧边进行切割处理形成所述延伸面13，所述切割方式为刀轮切割或激光切割。本实施例中切割形成的所述延伸面13为倾斜面，即所述延伸面13为斜平面，所述基板1在背离所述背板一侧的纵截面为实心正梯形结构，所述基板1在靠近所述背板一侧的纵截面为实心长方形结构。\n\n[0035]在一些实施例中，所述基板1包括TFT基板作为驱动电路基板，所述TFT基板包括衬底和设置于所述衬底上的金属导电层，所述基板1上还设置有复数个所述发光器件2，且所述基板1上的所述复数个发光器件2的电极与所述基板1即所述TFT基板上的金属导电层进行电性连接；作为优选实施方式，所述复数个发光器件2呈阵列式排布于所述基板1上。并且，在所述基板1的延伸面13上也设置有所述发光器件2。\n\n[0036]需要进一步说明的是，在所述基板1靠近所述发光器件2的一侧上设置挖槽，所述金属导电层容置于所述挖槽内，所述发光器件2局部收容于所述挖槽内并与所述金属导电层电连接，所述挖槽的设计有利于固定所述复数个发光器件2；可选择地，所述发光器件2可以通过巨量转移的方式实现与所述基板1的金属导电层的电性连接。其中，采用曝光显影工艺在所述基板1的第一表面12上形成所述金属导电层。\n\n[0037]请续见图6，在本实施例中，本申请所述背光模组包括多个拼接设置的所述基板1和设置于相邻的所述基板1之间的胶材结构件21，所述胶材结构件21用于粘结相邻的所述基板1，所述胶材结构件21的材料包括但不限于双面胶、水胶及光学胶的至少一种；其中，每一所述基板1的侧边设置有一所述延伸面13，且相邻所述基板1的所述延伸面13分别分布于所述胶材结构件21的两侧，两相邻所述基板1的延伸面13、所述胶材结构件21在所述背光方向上的正投影为补光区22。并且，所述多个基板1上设置有复数个所述发光器件2，多个所述基板1上均设置有所述延伸面13，且所述发光器件2设置于所述多个基板1的所述延伸面13上作为光源。\n\n[0038]如图6所示的，在本实施例中，所述延伸面13上的光源传导至所述补光区22的扩散膜4上，改善现有技术中所述基板1的光源无法传导至所述补光区22的扩散膜4上并产生光线的问题，从而实现改善现有的拼接mini LED背光模组在拼接处产生拼接暗线的问题。\n\n[0039]另外，在其他实施方式中，所述延伸面13也可以是满足导光要求的曲面，例如所述延伸面13为凹型曲面，所述发光器件2设置于所述凹型曲面上，由于所述凹形曲面的对光线的汇聚作用，所述凹型曲面上的所述发光器件2的光源能够传导至所述补光区22的扩散膜4上。\n\n[0040]此外，所述背光模组还包括封装胶层，所述封装胶层设置于所述基板1的金属导电层与所述复数个发光器件2之间，所述封装胶层为绝缘胶或光学胶；作为优选实施方式，所述封装胶层为硅胶层，所述封装胶层用于对多个所述发光器件2进行多面封装，所述封装胶层用于使所述复数个发光器件2的电极与所述金属导电层之间的连接部位处于绝缘状态，所述封装胶层的所述绝缘胶主要用于固定所述复数个发光器件2。\n\n[0041]在本发明的上述实施例中，所述发光器件2均为mini LED。其中，所述mini LED可以通过所述基板1的金属走线层与特定电源连接控制发光或不发光，mini LED可以发射红光、蓝光、绿光等，mini LED所发射的光的颜色主要由所述mini LED的材料及混光条件决定。\n\n[0042]在其他实施例中，所述发光器件2不限于mini LED，所述发光器件2还可以选自OLED、LED、QD中的至少一种，例如所述背光模组可采用RGB三色LED一体化封装的白色LED，蓝光LED芯片激发黄色荧光粉可出射白光，RGB三色LED经混色产生白光等方式，在本发明中关于mini LED、LED及其他电致发光器件作为光源的选取，本领域技术人员可根据实际实验效能和优缺点需求进行分析决策，在此不作比较。\n\n[0043]在上述实施例中，所述荧光膜3整面覆盖所述基板1上的所述复数个发光器件2，所述萤光膜3为整面覆盖方式形成，能够保证拼接处的所述荧光膜3与所述多个基板1处的一致性；由于所述荧光膜3介质整面均匀性较好，因此保证所述复数个发光器件2出光后在所述荧光膜3中均匀传导；所述萤光膜3的材料为透明光学胶(简称OCA胶)、荧光粉或量子点保护膜中的任意一种。\n\n[0044]在上述实施例中，所述背光模组还包括但不限于所述扩散膜4之外的其他光学膜材，例如所述背光模组还包括棱镜膜，所述棱镜膜设置于所述扩散膜4背离所述背板的一侧，本领域技术人员可以根据本发明实施例的实际需求对所述光学膜材进行实验设置，属于本领域内较常见的技术手段，在此不进行详细说明。\n\n[0045]本发明还提供一种显示装置，所述显示装置包括：显示面板，包括第一基板、第二基板，以及设置于所述第一基板和所述第二基板之间的液晶层；所述背光模组，设置于所述显示面板的下方，所述背光模组包括依次设置的背板、基板1、设置于所述基板1上的复数个发光器件2、萤光膜3、扩散膜4及棱镜膜。\n\n[0046]本申请实施例提供的背光模组及显示装置，所述背光模组包括至少一基板1和至少一补光区，在基板1设置多个mini LED，在所述基板1背离背板一侧设置一第一表面12，所述基板1具有一中心区域10和围绕所述中心区域10的至少一边缘区域11，所述基板1具有一连续的第一表面12，所述第一表面12从所述中心区域10延伸至所述边缘区域11；且在所述边缘区域11内，所述第一表面12还包括一延伸面13，所述延伸面13为所述第一表面12在所述边缘区域11内偏离所述中心区域10而形成的一表面，所述基板1在所述边缘区域11的厚度小于所述基板1在所述中心区域10的厚度；或者，所述基板1还具有一连续的第二表面15，所述第二表面15与所述第一表面12相对设置，其中，所述延伸面13在从所述中心区域10延伸至所述边缘区域11的方向上，所述延伸面13延伸至与所述第二表面15形成一夹角；所述延伸面13优选为斜平面；所述延伸面13将所述mini LED的光源传导至所述补光区的扩散膜4上，使得所述补光区的暗线有所补强，这样过渡平滑，整面亮度更均匀。\n\n[0047]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0048]以上对本申请实施例所提供的背光模组和显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种背光模组及显示装置。\n\n背景技术\n\n[0002]相较于传统侧入式背光模组(BLU)，现阶段mini LED背光模组因其高亮、超窄边框、以及能够分区控光和异形等优势而受到更多的关注；目前业界对小尺寸(如手机)可以一次成型制作，但是受限于设备尺寸，对于中大尺寸的mini LED背光模组只能采取多片拼接的方式来实现更大尺寸。其中，请参阅图1和图2，对传统侧入式背光模组的结构与miniLED背光模组的结构进行比较，其中，图1是传统侧入式背光模组的结构示意图，图2是miniLED背光模组的结构示意图。如图1所示的，所述传统侧入式背光模组包括：依次层叠设置的一背板1、反射层7、基板2、扩散板5及棱镜片6，光源3包括电致发光器件31，所述电致发光器件31设置于所述基板2的侧壁上，所述基板2为PCB基板或FPC基板；如图2所示的，mini LED背光模组包括层叠设置的一背板1；一基板2；设置于所述基板2上的光源层3，所述光源层3包括多个mini LED器件31；设置于所述光源层3并整面覆盖所述mini LED器件31及所述基板2的萤光膜4；设置于所述萤光膜4背离所述背板1一侧的光学膜材，所述光学膜材包括扩散膜5及棱镜片6；其中，所述基板2上设置有金属导电层(未图示)，所述mini LED器件31的电极与所述基板2的金属导电层电连接。\n\n[0003]常见的mini LED背光模组会在LED表面覆盖一层树脂保护层，一种是透明的，后续组装时加上类似量子点膜层(QD film)等色转换膜层变成白光；另外一种是直接在透明树脂中添加黄色荧光粉而制成荧光膜，这样也可以转换成白光；其中，图3为后者呈现的一种结构，具体地，图3是一种mini LED背光模组的拼接示意图。其中，所述mini LED背光模组包括基板层2，所述基板层2包括多个拼接设置的基板20，至少两相邻所述基板20之间存在拼接缝210，其实，不管是透明的或是添加荧光粉的保护胶，最多能覆盖到基板的边界，由于组装拼接工差，所以接缝处没有光线导出(图3中所示的虚线框的区域内)，并且随着背光模组厚度要求越来越薄，如此预留的混光空间(OD)也更加有限，这样就在每片之间接缝处因混光不均从而在视觉上形成暗线，其现象如图4中所示的圆圈内，图4是拼接区域的暗线的效果示意图，如图4所示的，第一基板201、第二基板202之间的拼接缝210处产生暗线。\n\n发明内容\n\n[0004]本申请实施例提供一种背光模组及显示装置，所述背光模组包括基板和设置于所述基板上的复数个发光器件，所述基板具有一中心区域和至少一边缘区域，所述基板具有一连续的第一表面，所述第一表面从所述中心区域延伸至所述边缘区域；并且在所述边缘区域内，所述第一表面包括一延伸面，所述延伸面为所述第一表面在所述边缘区域内偏离所述中心区域而形成的表面；以及在所述延伸面上设置所述发光器件，所述发光器件为mini LED，所述延伸面能够使得所述边缘区域的光线相对于所述中心区域的光线发生偏转并传导至所述边缘区域内，实现改善所述边缘区域的暗线的目的。\n\n[0005]本申请实施例提供一种背光模组，所述背光模组包括：基板以及设置于所述基板上的复数个发光器件，其中，所述基板具有一中心区域和围绕所述中心区域的至少一边缘区域，所述基板还具有一连续的第一表面，所述第一表面从所述中心区域延伸至所述边缘区域，并且，在所述边缘区域内，所述第一表面还包括一延伸面，所述延伸面为所述第一表面在所述边缘区域内偏离所述中心区域而形成的表面。\n\n[0006]在一些实施例中，所述基板在所述边缘区域的厚度小于所述基板在所述中心区域的厚度。\n\n[0007]在一些实施例中，所述基板还具有一连续的第二表面，所述第二表面与所述第一表面相对设置，其中，所述延伸面在从所述中心区域向所述边缘区域延伸的过程中，所述延伸面延伸至与所述第二表面形成一夹角。\n\n[0008]在一些实施例中，所述延伸面为一倾斜面。\n\n[0009]在一些实施例中，所述背光模组还包括一荧光膜，所述萤光膜设置于所述发光器件上且整面覆盖所述发光器件和所述基板。\n\n[0010]在一些实施例中，所述背光模组还包括一扩散膜，所述扩散膜设置于所述萤光膜背离所述基板的一侧。\n\n[0011]在一些实施例中，所述背光模组还包括棱镜膜，所述棱镜膜设置于所述扩散膜背离所述基板的一侧。\n\n[0012]在一些实施例中，所述基板为玻璃基板。\n\n[0013]在一些实施例中，所述发光器件为mini LED。\n\n[0014]本申请实施例还提供一种显示装置，包括如上所述的背光模组，还包括显示面板，其中，所述显示面板包括第一基板、第二基板，以及设置于所述第一基板和所述第二基板之间的液晶层。\n\n[0015]本申请实施例提供的一种背光模组及显示装置，所述背光模组包括基板和设置于所述基板上的复数个发光器件，所述基板具有一中心区域和至少一边缘区域，所述基板具有一连续的第一表面，所述第一表面从所述中心区域延伸至所述边缘区域；并且在所述边缘区域内，所述第一表面包括一延伸面，所述延伸面为所述第一表面在所述边缘区域内偏离所述中心区域而形成的表面；所述基板在所述边缘区域的厚度小于所述基板在所述中心区域的厚度；在所述延伸面上设置所述发光器件，所述发光器件为mini LED，所述延伸面能够使得所述边缘区域的光线相对于所述中心区域的光线发生偏转并传导至所述边缘区域内，实现改善所述边缘区域的暗线的目的。\n\n附图说明\n\n[0016]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0017]图1是传统侧入式背光模组的结构示意图。\n\n[0018]图2是mini LED背光模组的结构示意图。\n\n[0019]图3是一种mini LED背光模组的拼接示意图。\n\n[0020]图4是拼接区域的暗线的效果示意图。\n\n[0021]图5是一种mini LED背光模组的剖面示意图。\n\n[0022]图6是一种mini LED背光模组的拼接效果图。\n\n具体实施方式\n\n[0023]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0024]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0025]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0026]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0027]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0028]请参阅图5和图6，图5是一种mini LED背光模组的剖面示意图；图6是一种miniLED背光模组的拼接效果图。如图5和图6所示的，在本实施例中，提供一种背光模组，包括依次设置的一基板1、设置于所述基板1上的复数个发光器件2、设置于所述复数个发光器件2上且正面覆盖所述发光器件2及所述基板1的萤光膜3，以及设置于所述萤光膜3背离所述基板1一侧的扩散膜4。在本实施例中，所述背光模组还包括一背板，所述背板设置于所述基板1远离所述棱镜膜的一侧。\n\n[0029]如图5所示的，所述基板1具有一中心区域10和围绕所述中心区域10的至少一边缘区域11，所述基板1具有一连续的第一表面12，所述第一表面12从所述中心区域10延伸至所述边缘区域11；且在所述边缘区域11内，所述第一表面12还包括一延伸面13，所述延伸面13为所述第一表面12在所述边缘区域11内偏离所述中心区域10而形成的表面，即，所述第一表面12对应所述中心区域10和所述边缘区域11，所述延伸面13对应所述边缘区域11，所述第一表面12除了所述延伸面13以外的区域定义中心表面14，所述延伸面13与所述中心表面14连接为连续的所述第一表面12。\n\n[0030]如图5所示的，所述基板1还具有一连续的第二表面15，所述第二表面15与所述第一表面12相对设置，其中，所述延伸面13在从所述中心区域10延伸至所述边缘区域11的方向上，所述延伸面13延伸至与所述第二表面15形成一夹角16。\n\n[0031]在本实施例中，所述基板1在所述边缘区域11的厚度小于所述基板1在所述中心区域10的厚度，其中，在从所述中心区域10延伸至所述边缘区域11的方向上，所述基板1的延伸面13距离所述第二表面15的高度逐渐减小。此处需要进行说明的是，作为优选实施方式，所述第二表面15为一平面，所述延伸面13为一倾斜面，所述中心表面14为与所述第二表面15平行设置的平面。\n\n[0032]在本申请所述实施例中，所述边缘区域11在所述基板1的第二表面15上的正投影定义为补光区，所述补光区是出射光线较为暗的区域，即需要进行补偿光线的区域，例如所述补光区也可以是由于所述复数个发光器件2的局部损坏或失效，或者由于所述萤光膜3的不平整而造成的亮度不均的区域。\n\n[0033]在本实施例中，在所述延伸面13上设置有所述发光器件2作为光源；由于所述延伸面13相对于所述第一表面12产生的偏离，所述延伸面13上的所述发光器件2的出光角度相对于所述第一表面12上的所述发光器件2的出光角度发生偏转，使得所述延伸面13上的所述发光器件2的光线均朝向所述补光区的方位偏转，改变传统出光角度，所述延伸面13用于将所述发光器件2的光线传导至所述补光区的扩散膜4(图6中示意)上，所述扩散膜4用于使所述复数个发光器件2的光线均匀射出。\n\n[0034]值得一提的是，在本实施例中，所述基板1为玻璃基板。相较于现有技术中的常规基板，常规基板一般为PCB基板或FPC基板，由于所述PCB基板或所述FPC基板由多层树脂压合而成，无法通过切割、研磨等简单加工工艺制备理想形状，本实施例所述基板1采用玻璃基板，能够取代常规的所述PCB基板及所述FPC基板，能够直接对所述基板1进行切割形成需要的形状，例如通过对所述基板1的第一表面12的至少一个侧边进行切割处理形成所述延伸面13，所述切割方式为刀轮切割或激光切割。本实施例中切割形成的所述延伸面13为倾斜面，即所述延伸面13为斜平面，所述基板1在背离所述背板一侧的纵截面为实心正梯形结构，所述基板1在靠近所述背板一侧的纵截面为实心长方形结构。\n\n[0035]在一些实施例中，所述基板1包括TFT基板作为驱动电路基板，所述TFT基板包括衬底和设置于所述衬底上的金属导电层，所述基板1上还设置有复数个所述发光器件2，且所述基板1上的所述复数个发光器件2的电极与所述基板1即所述TFT基板上的金属导电层进行电性连接；作为优选实施方式，所述复数个发光器件2呈阵列式排布于所述基板1上。并且，在所述基板1的延伸面13上也设置有所述发光器件2。\n\n[0036]需要进一步说明的是，在所述基板1靠近所述发光器件2的一侧上设置挖槽，所述金属导电层容置于所述挖槽内，所述发光器件2局部收容于所述挖槽内并与所述金属导电层电连接，所述挖槽的设计有利于固定所述复数个发光器件2；可选择地，所述发光器件2可以通过巨量转移的方式实现与所述基板1的金属导电层的电性连接。其中，采用曝光显影工艺在所述基板1的第一表面12上形成所述金属导电层。\n\n[0037]请续见图6，在本实施例中，本申请所述背光模组包括多个拼接设置的所述基板1和设置于相邻的所述基板1之间的胶材结构件21，所述胶材结构件21用于粘结相邻的所述基板1，所述胶材结构件21的材料包括但不限于双面胶、水胶及光学胶的至少一种；其中，每一所述基板1的侧边设置有一所述延伸面13，且相邻所述基板1的所述延伸面13分别分布于所述胶材结构件21的两侧，两相邻所述基板1的延伸面13、所述胶材结构件21在所述背光方向上的正投影为补光区22。并且，所述多个基板1上设置有复数个所述发光器件2，多个所述基板1上均设置有所述延伸面13，且所述发光器件2设置于所述多个基板1的所述延伸面13上作为光源。\n\n[0038]如图6所示的，在本实施例中，所述延伸面13上的光源传导至所述补光区22的扩散膜4上，改善现有技术中所述基板1的光源无法传导至所述补光区22的扩散膜4上并产生光线的问题，从而实现改善现有的拼接mini LED背光模组在拼接处产生拼接暗线的问题。\n\n[0039]另外，在其他实施方式中，所述延伸面13也可以是满足导光要求的曲面，例如所述延伸面13为凹型曲面，所述发光器件2设置于所述凹型曲面上，由于所述凹形曲面的对光线的汇聚作用，所述凹型曲面上的所述发光器件2的光源能够传导至所述补光区22的扩散膜4上。\n\n[0040]此外，所述背光模组还包括封装胶层，所述封装胶层设置于所述基板1的金属导电层与所述复数个发光器件2之间，所述封装胶层为绝缘胶或光学胶；作为优选实施方式，所述封装胶层为硅胶层，所述封装胶层用于对多个所述发光器件2进行多面封装，所述封装胶层用于使所述复数个发光器件2的电极与所述金属导电层之间的连接部位处于绝缘状态，所述封装胶层的所述绝缘胶主要用于固定所述复数个发光器件2。\n\n[0041]在本发明的上述实施例中，所述发光器件2均为mini LED。其中，所述mini LED可以通过所述基板1的金属走线层与特定电源连接控制发光或不发光，mini LED可以发射红光、蓝光、绿光等，mini LED所发射的光的颜色主要由所述mini LED的材料及混光条件决定。\n\n[0042]在其他实施例中，所述发光器件2不限于mini LED，所述发光器件2还可以选自OLED、LED、QD中的至少一种，例如所述背光模组可采用RGB三色LED一体化封装的白色LED，蓝光LED芯片激发黄色荧光粉可出射白光，RGB三色LED经混色产生白光等方式，在本发明中关于mini LED、LED及其他电致发光器件作为光源的选取，本领域技术人员可根据实际实验效能和优缺点需求进行分析决策，在此不作比较。\n\n[0043]在上述实施例中，所述荧光膜3整面覆盖所述基板1上的所述复数个发光器件2，所述萤光膜3为整面覆盖方式形成，能够保证拼接处的所述荧光膜3与所述多个基板1处的一致性；由于所述荧光膜3介质整面均匀性较好，因此保证所述复数个发光器件2出光后在所述荧光膜3中均匀传导；所述萤光膜3的材料为透明光学胶(简称OCA胶)、荧光粉或量子点保护膜中的任意一种。\n\n[0044]在上述实施例中，所述背光模组还包括但不限于所述扩散膜4之外的其他光学膜材，例如所述背光模组还包括棱镜膜，所述棱镜膜设置于所述扩散膜4背离所述背板的一侧，本领域技术人员可以根据本发明实施例的实际需求对所述光学膜材进行实验设置，属于本领域内较常见的技术手段，在此不进行详细说明。\n\n[0045]本发明还提供一种显示装置，所述显示装置包括：显示面板，包括第一基板、第二基板，以及设置于所述第一基板和所述第二基板之间的液晶层；所述背光模组，设置于所述显示面板的下方，所述背光模组包括依次设置的背板、基板1、设置于所述基板1上的复数个发光器件2、萤光膜3、扩散膜4及棱镜膜。\n\n[0046]本申请实施例提供的背光模组及显示装置，所述背光模组包括至少一基板1和至少一补光区，在基板1设置多个mini LED，在所述基板1背离背板一侧设置一第一表面12，所述基板1具有一中心区域10和围绕所述中心区域10的至少一边缘区域11，所述基板1具有一连续的第一表面12，所述第一表面12从所述中心区域10延伸至所述边缘区域11；且在所述边缘区域11内，所述第一表面12还包括一延伸面13，所述延伸面13为所述第一表面12在所述边缘区域11内偏离所述中心区域10而形成的一表面，所述基板1在所述边缘区域11的厚度小于所述基板1在所述中心区域10的厚度；或者，所述基板1还具有一连续的第二表面15，所述第二表面15与所述第一表面12相对设置，其中，所述延伸面13在从所述中心区域10延伸至所述边缘区域11的方向上，所述延伸面13延伸至与所述第二表面15形成一夹角；所述延伸面13优选为斜平面；所述延伸面13将所述mini LED的光源传导至所述补光区的扩散膜4上，使得所述补光区的暗线有所补强，这样过渡平滑，整面亮度更均匀。\n\n[0047]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0048]以上对本申请实施例所提供的背光模组和显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10829, 23883, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种柔性背光模组和液晶显示面板。\n\n背景技术\n\n[0002]在显示技术领域，液晶显示技术具有极为重要的地位。液晶显示装置作为当今最为普及和流行的显示设备之一，具有响应速度快、显示画面亮度高、对比度高、以及功耗低等优点。液晶显示装置包括背光模组和液晶显示模组，其显示画面需要背光模组提供的光源，并利用液晶显示模组中的液晶及彩膜板显示彩色图案。背光模组提供光源的品质将直接影响显示装置的显示效果。\n\n[0003]背光模组按光源的位置可以分为侧入式(edge-lit)背光模组及直下式(direct-lit)背光模组。侧入式背光模组是将光源设置在液晶面板侧后方的背板边缘，光源从导光板一侧的入光面进入导光板，经反射和扩散后从导光板出光面射出，形成面光源提供给液晶面板。直下式背光模组是由多组光源均匀分布在背光模组的底部，在光源上加装发散透镜以在背光模组内部腔体的空间距离内进行混光，形成面光源提供给液晶面板；其中侧入式背光模组按照结构来分一般包括LED光源、背板、反射片、导光板(LGP)、扩散片、增光片、遮光胶等结构。\n\n[0004]随着可穿戴应用设备如智能眼镜、智能手表等的逐渐兴起，显示行业对可挠曲显示器件的需求也不断增加。目前的柔性显示技术仅仅简单将液晶显示面板部分做成柔性可弯曲的还远远不够实际应用，还需要有柔性的背光模组进行搭配才能使用，而目前需要实现背光弯曲的主要瓶颈在于LGP的弯曲，导光板的材料一般采用较为硬质的光学级的亚克力、PC板材或PMMA材质，柔韧度欠佳，此外现有背光技术难以在弯曲的状态下实现均匀的显示效果。\n\n发明内容\n\n[0005]本申请实施例旨在提供一种柔性背光模组和液晶显示面板，以及解决因显示器面板弯曲和因弯曲而导致的背光分布不均匀的问题。\n\n[0006]本申请提供一种柔性背光模组，包括：\n\n[0007]导光板，所述导光板包括出光面、底面和至少一个的入光面，所述入光面与出光面垂直且相邻，所述出光面与底面相对设置；\n\n[0008]背光源，所述背光源位于所述入光面的一侧，使得所述背光源发出的光通过所述入光面进入所述导光板；\n\n[0009]柔性发光膜层，所述出光面设置有一条或多条沟槽，所述柔性发光膜层设置在所述沟槽内。\n\n[0010]进一步的，所述出光面具有四个端面，所述沟槽设置在所述出光面的至少一个端面。使得所述导光板具有周边的可弯曲性。\n\n[0011]进一步的，所述出光面具有一中心，所述沟槽穿过所述中心，将所述出光面分为两个部分。使得所述导光板可对折弯曲。\n\n[0012]进一步的，所述沟槽均匀间隔排布于所述出光面。使得所述导光板具有整体的可弯曲性。\n\n[0013]进一步的，所述沟槽之间相互平行。\n\n[0014]进一步的，所述沟槽之间也可呈一定角度交叉排列。\n\n[0015]进一步的，所述导光板具有至少一个弯折轴，所述导光板可沿所述弯折轴弯折，所述沟槽在所述出光面的正投影为沿所述弯折轴方向延伸的条状。\n\n[0016]进一步的，所述沟槽的横截面呈矩形、三角形、梯形或半圆形。\n\n[0017]进一步的，所述柔性发光膜层为多个发光元件组成，所述发光元件为次毫米发光二极管或/和微型发光二极管。\n\n[0018]进一步的，所述沟槽具有一底边，多条侧边，以及一开口，所述柔性发光膜层的出光方向正对所述开口或/和所述侧边。\n\n[0019]进一步的，所述沟槽内还设置有柔性电路板，所述柔性发光膜层与所述柔性电路板电性连接。\n\n[0020]进一步的，所述柔性发光膜层分为上方和下方，所述柔性发光膜层的出光方向为从所述下方至所述上方的方向，所述柔性电路板位于所述柔性发光膜层的下端。\n\n[0021]第二方面，还提供一种液晶显示面板，包括以上第一方面的背光模组。\n\n[0022]本申请提供一种柔性背光模组和液晶显示面板，因为柔性液晶显示面板需要搭配柔性的背光模组，而背光模组的柔性主要受导光板的制约，本申请通过在导光板的出光面设置多个沟槽，一方面，可以释放一部分导光板的弯曲应力，实现导光板周边或整体的可弯曲性。另一方面，沟槽内设置柔性发光膜层，起到了辅助发光的作用，突破了传统的侧入式背光模组因为面板弯曲而导致导光板的出光不匀，或者大尺寸显示面板的导光板出光不均，最后影响显示效果的情况，此外，沟槽内的柔性发光膜层也能起到补充沟槽阴影的作用，因此，可以在液晶显示面板弯曲的状态下实现均匀的显示效果。\n\n附图说明\n\n[0023]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0024]图1为现有技术中的柔性背光模组的立体结构示意图；\n\n[0025]图2为本申请实施例提供的柔性背光模组的结构示意图；\n\n[0026]图3为本申请实施例提供的柔性背光模组的截面结构示意图；\n\n[0027]图4为本申请实施例提供的第二种柔性背光模组的结构示意图；\n\n[0028]图5为本申请实施例提供的第三种柔性背光模组的结构示意图；\n\n[0029]图6为本申请实施例提供的第三种柔性背光模组的截面结构示意图；\n\n[0030]图7为本申请实施例提供的第四种柔性背光模组的结构示意图；\n\n[0031]图8为本申请实施例提供的第四种柔性背光模组的截面结构示意图；\n\n[0032]图9为本申请实施例提供的凹槽部分的结构示意图；\n\n[0033]图10为本申请实施例提供的另一种凹槽部分的结构示意图。\n\n[0034]其中附图标记说明：\n\n[0035]100-导光板；110-入光面；120-出光面；130-底面；200-沟槽；210-底边；220-侧边；300-柔性发光膜层；310-发光元件；400-柔性电路板；500-弯折轴；600-背光源。\n\n具体实施方式\n\n[0036]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0037]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0038]具体的，请参阅图1至图10，本申请实施例提供一种柔性背光模组，包括：\n\n[0039]导光板100，所述导光板100包括出光面120、底面130和至少一个的入光面110，所述入光面110与出光面120垂直且相邻，所述出光面120与底面130相对设置；\n\n[0040]背光源600，所述背光源600位于所述入光面110的一侧，使得所述背光源600发出的光通过所述入光面110进入所述导光板100；\n\n[0041]柔性发光膜层300，所述出光面120设置有一条或多条沟槽200，所述柔性发光膜层300设置在所述沟槽200内。\n\n[0042]其中，所述背光源包括电路板和led。\n\n[0043]其中，所述沟槽200内还设置有柔性电路板400，所述柔性发光膜层300与柔性电路板400电性连接。\n\n[0044]其中，所述所述沟槽200之间相互平行，或呈一定角度交叉排列。当所述沟槽200交叉排列时，优选的，沟槽之间交叉角度为90°，交叉点位于导光板的中心，或者多个交叉点围绕中心设置，在这样的条件下，有利于大尺寸液晶显示面板的光源的补充。\n\n[0045]其中，所述导光板100具有至少一个弯折轴500，所述导光板100可沿所述弯折轴500弯折，所述沟槽200在所述出光面120的正投影为沿所述弯折轴500方向延伸的直条状。\n\n[0046]本申请实施例提供的一种柔性背光模组，通过在导光板100的出光面120设置多个沟槽200，可以释放一部分弯曲应力，实现导光板100周边或整体的可弯曲性。另一方面，沟槽200内设置柔性发光膜层300，起到了辅助发光的作用，突破了传统的侧入式背光模组因为面板弯曲而导致导光板100的出光不匀，或者大尺寸显示面板的导光板100出光不均，最后影响显示效果的情况，此外，沟槽200内的柔性发光膜层300也能起到补充沟槽阴影的作用。因此，本申请可以在液晶显示面板弯曲的状态下实现均匀的显示效果。\n\n[0047]在一些实施例中，所述出光面120具有四个端面，所述沟槽200设置在所述出光面120的至少一个端面。优选的，所述端面可为两个且相对设置，使得所述导光板100具有周边的可弯曲性。\n\n[0048]请参阅图1至图4所示，图1代表现有的一种柔性背光模组的结构示意图，包括导光板100和背光源600，导光板100包括出光面120、底面120和入光面110，其中箭头代表背光源600的入光方向；图2代表本申请实施例提供的一种柔性背光模组的结构示意图，从图中可看出柔性背光模组中的导光板100的下端设置有背光源600，所述背光模组为侧入式发光，导光板100的左右两个端面设置了含有柔性发光膜层300的沟槽200，使得导光板100具有左右的可弯曲性；图3代表本申请实施例提供的柔性背光模组的横截面结构示意图，其中箭头指的方向为柔性发光膜层300的发光方向，从图中还可以看出，由于背光源600的弯曲性较差，所述背光源600设置在未弯曲的部分，柔性背光模组的未弯曲部分光源由背光源600提供，而弯曲部分的光源为柔性发光膜层300来提供；图4表示本申请实施例提供的第二种柔性背光模组结构示意图，从图中可看出，柔性背光模组中的导光板100的下端设置有背光源600，上下两个端面设置了含有柔性发光膜层300的沟槽200，使得导光板100具有上下的可弯曲性。\n\n[0049]可以理解的是，上图仅代表部分导光板100周边的沟槽200的分布情况，沟槽200还可以同时分布在上下或者左右两个端面，或者每个端面设置不少于一条的沟槽200，只要能导光板100周边设置有沟槽200即可，具体此处不做限定。\n\n[0050]本申请实施例提供的一种柔性背光模组，通过在端面设置沟槽200，从而可以实现导光板100一定程度的周边弯曲。\n\n[0051]在一些实施例中，所述出光面120具有一中心，所述沟槽200穿过所述中心，将所述出光面120分为两个部分，使得所述导光板100可对折弯曲，从而实现显示面板的可对折弯曲。\n\n[0052]图5表示本申请实施例提供的第三种柔性背光模组结构示意图，其中沟槽200位于柔性背光模组中的导光板100的中间位置，导光板100的上下两端分别设置有背光源600；图6表示对应的柔性背光模组截面的结构示意图，其中箭头表示柔性发光膜层300以及背光源600的出光方向。所述背光源600补充未弯曲部分的光源，柔性发光膜层300补充弯曲部分的光源。\n\n[0053]本申请实施例提供的柔性背光模组，通过在导光板100的中间位置设置沟槽200，从而可以实现导光板100的对折弯曲，沟槽200内的柔性发光膜层300可以补充导光板100弯曲部分的光，解决了导光板100弯曲后，背光源600发出的光难以到达导光板100的弯曲部分，使得导光板100的出光不均匀的现象。\n\n[0054]在一些实施例中，所述沟槽200均匀间隔排布于所述出光面120。使得所述导光板100具有整体的可弯曲性。\n\n[0055]请参阅图7和图8，图7为本申请实施例提供的第四种柔性背光模组的结构示意图，从图中可以看出，沟槽200规律间隔排布于整个所述柔性背光模组的导光板100的出光面120，所述沟槽200呈横向设置，所述背光源600设置于导光板100的上下两端；图8为弯曲后的导光板100对应的截面图，其中箭头表示柔性发光膜层300以及背光源600的出光方向，所述背光源600为主光源，柔性发光膜层300为辅助光源。\n\n[0056]本申请实施例提供的一种柔性背光模组，使得所述导光板100具有整体的可弯曲性。此外也还有助于模组实验通过，尤其是可靠性测试。目前，在产品制作过程中，背光模组制作完成后，需要对其进行可靠性测试，在LCD模组结构，尤其是背光结构，可能会在测试中出现褶皱(膜拱)，其中褶皱的原因就包括有导光板100的弓起(逆翘)，导光板100的应力情况是导致导光板100弓起的主要原因之一，通过在导光板100上设置沟槽200，可以一定程度释放应力，从而有助于测试的通过。\n\n[0057]可以理解的是，上图仅代表以上实施例的一种情况，所述沟槽200之间还可以呈纵向设置，或者倾斜呈一定的角度，具体此处不做限定。\n\n[0058]在一些实施例中，所述沟槽200的横截面呈矩形、三角形、梯形或半圆形。\n\n[0059]在一些实施例中，参阅图9和图10，所述柔性发光膜层300为多个发光元件310组成，所述发光元件310为次毫米发光二极管(mini LED)或/和微型发光二极管(MicroLED)。\n\n[0060]次毫米发光二极管(mini LED)是指封装大小在0.1-0.2mm的LED，又称为次毫米发光二极管。\n\n[0061]微型发光二极管(MicroLED)。是将传统的LED结构进行微小化和矩阵化，并采用CMOS集成电路工艺制成驱动电路，来实现每一个像素点定址控制和单独驱动的显示技术。\n\n[0062]本申请实施例提供的一种柔性背光模组，由于利用了mini LED或MicroLED作为一种补充的背光源600，在具有柔性的同时，使面板色域非常好，对比度非常高。并且每个灯可以单独控制，因此可以实现区域调光，从而提升显示效果。\n\n[0063]所述沟槽200具有一底边210，多条侧边220，以及一开口，所述柔性发光膜层300的出光方向正对所述开口或/和所述侧边220。\n\n[0064]具体的，所述柔性发光膜层300分为上端和下端，所述柔性发光膜层300的出光方向为从所述下端至所述上端的方向，所述柔性电路板400位于所述柔性发光膜层300的下端。\n\n[0065]请参阅图9和图10，分别代表两种本申请实施例提供的凹槽部分的结构示意图，其中图9代表所述柔性发光膜层300的出光方向正对所述开口。图10代表所述柔性发光膜层300的出光方向正对所述沟槽200的两条侧边220。\n\n[0066]本申请实施例提供的柔性背光模组，提供了两种柔性发光膜层300的出光方向，即正对着沟槽200开口的方向和对着沟槽200侧边220的方向，这两种柔性发光膜层300的出光方向，均可以实现辅助发光的效果。可以理解的是，这两种发光的方向，可以应用在以上任一实施例中，此处不再赘述。\n\n[0067]需要说明的是，上述柔性背光模组实施例中仅描述了上述结构，可以理解的是，除了上述结构之外，本发明实施例柔性背光模组中，还可以根据需要包括任何其他的必要结构，如背板、反射片、扩散片、增光片、遮光胶等，具体此处不作限定。\n\n[0068]在上述实施例的基础上本申请还提供一种液晶显示面板，包括以上各实施例提供的背光模组。\n\n[0069]在上述实施例的基础上本申请还提供一种液晶显示装置，例如手机、液晶电视或可穿戴设备，包括以上实施例提供的液晶显示面板。\n\n[0070]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0071]以上对本申请实施例所提供的一种柔性背光模组和液晶显示面板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种柔性背光模组和液晶显示面板。\n\n背景技术\n\n[0002]在显示技术领域，液晶显示技术具有极为重要的地位。液晶显示装置作为当今最为普及和流行的显示设备之一，具有响应速度快、显示画面亮度高、对比度高、以及功耗低等优点。液晶显示装置包括背光模组和液晶显示模组，其显示画面需要背光模组提供的光源，并利用液晶显示模组中的液晶及彩膜板显示彩色图案。背光模组提供光源的品质将直接影响显示装置的显示效果。\n\n[0003]背光模组按光源的位置可以分为侧入式(edge-lit)背光模组及直下式(direct-lit)背光模组。侧入式背光模组是将光源设置在液晶面板侧后方的背板边缘，光源从导光板一侧的入光面进入导光板，经反射和扩散后从导光板出光面射出，形成面光源提供给液晶面板。直下式背光模组是由多组光源均匀分布在背光模组的底部，在光源上加装发散透镜以在背光模组内部腔体的空间距离内进行混光，形成面光源提供给液晶面板；其中侧入式背光模组按照结构来分一般包括LED光源、背板、反射片、导光板(LGP)、扩散片、增光片、遮光胶等结构。\n\n[0004]随着可穿戴应用设备如智能眼镜、智能手表等的逐渐兴起，显示行业对可挠曲显示器件的需求也不断增加。目前的柔性显示技术仅仅简单将液晶显示面板部分做成柔性可弯曲的还远远不够实际应用，还需要有柔性的背光模组进行搭配才能使用，而目前需要实现背光弯曲的主要瓶颈在于LGP的弯曲，导光板的材料一般采用较为硬质的光学级的亚克力、PC板材或PMMA材质，柔韧度欠佳，此外现有背光技术难以在弯曲的状态下实现均匀的显示效果。\n\n发明内容\n\n[0005]本申请实施例旨在提供一种柔性背光模组和液晶显示面板，以及解决因显示器面板弯曲和因弯曲而导致的背光分布不均匀的问题。\n\n[0006]本申请提供一种柔性背光模组，包括：\n\n[0007]导光板，所述导光板包括出光面、底面和至少一个的入光面，所述入光面与出光面垂直且相邻，所述出光面与底面相对设置；\n\n[0008]背光源，所述背光源位于所述入光面的一侧，使得所述背光源发出的光通过所述入光面进入所述导光板；\n\n[0009]柔性发光膜层，所述出光面设置有一条或多条沟槽，所述柔性发光膜层设置在所述沟槽内。\n\n[0010]进一步的，所述出光面具有四个端面，所述沟槽设置在所述出光面的至少一个端面。使得所述导光板具有周边的可弯曲性。\n\n[0011]进一步的，所述出光面具有一中心，所述沟槽穿过所述中心，将所述出光面分为两个部分。使得所述导光板可对折弯曲。\n\n[0012]进一步的，所述沟槽均匀间隔排布于所述出光面。使得所述导光板具有整体的可弯曲性。\n\n[0013]进一步的，所述沟槽之间相互平行。\n\n[0014]进一步的，所述沟槽之间也可呈一定角度交叉排列。\n\n[0015]进一步的，所述导光板具有至少一个弯折轴，所述导光板可沿所述弯折轴弯折，所述沟槽在所述出光面的正投影为沿所述弯折轴方向延伸的条状。\n\n[0016]进一步的，所述沟槽的横截面呈矩形、三角形、梯形或半圆形。\n\n[0017]进一步的，所述柔性发光膜层为多个发光元件组成，所述发光元件为次毫米发光二极管或/和微型发光二极管。\n\n[0018]进一步的，所述沟槽具有一底边，多条侧边，以及一开口，所述柔性发光膜层的出光方向正对所述开口或/和所述侧边。\n\n[0019]进一步的，所述沟槽内还设置有柔性电路板，所述柔性发光膜层与所述柔性电路板电性连接。\n\n[0020]进一步的，所述柔性发光膜层分为上方和下方，所述柔性发光膜层的出光方向为从所述下方至所述上方的方向，所述柔性电路板位于所述柔性发光膜层的下端。\n\n[0021]第二方面，还提供一种液晶显示面板，包括以上第一方面的背光模组。\n\n[0022]本申请提供一种柔性背光模组和液晶显示面板，因为柔性液晶显示面板需要搭配柔性的背光模组，而背光模组的柔性主要受导光板的制约，本申请通过在导光板的出光面设置多个沟槽，一方面，可以释放一部分导光板的弯曲应力，实现导光板周边或整体的可弯曲性。另一方面，沟槽内设置柔性发光膜层，起到了辅助发光的作用，突破了传统的侧入式背光模组因为面板弯曲而导致导光板的出光不匀，或者大尺寸显示面板的导光板出光不均，最后影响显示效果的情况，此外，沟槽内的柔性发光膜层也能起到补充沟槽阴影的作用，因此，可以在液晶显示面板弯曲的状态下实现均匀的显示效果。\n\n附图说明\n\n[0023]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0024]图1为现有技术中的柔性背光模组的立体结构示意图；\n\n[0025]图2为本申请实施例提供的柔性背光模组的结构示意图；\n\n[0026]图3为本申请实施例提供的柔性背光模组的截面结构示意图；\n\n[0027]图4为本申请实施例提供的第二种柔性背光模组的结构示意图；\n\n[0028]图5为本申请实施例提供的第三种柔性背光模组的结构示意图；\n\n[0029]图6为本申请实施例提供的第三种柔性背光模组的截面结构示意图；\n\n[0030]图7为本申请实施例提供的第四种柔性背光模组的结构示意图；\n\n[0031]图8为本申请实施例提供的第四种柔性背光模组的截面结构示意图；\n\n[0032]图9为本申请实施例提供的凹槽部分的结构示意图；\n\n[0033]图10为本申请实施例提供的另一种凹槽部分的结构示意图。\n\n[0034]其中附图标记说明：\n\n[0035]100-导光板；110-入光面；120-出光面；130-底面；200-沟槽；210-底边；220-侧边；300-柔性发光膜层；310-发光元件；400-柔性电路板；500-弯折轴；600-背光源。\n\n具体实施方式\n\n[0036]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0037]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0038]具体的，请参阅图1至图10，本申请实施例提供一种柔性背光模组，包括：\n\n[0039]导光板100，所述导光板100包括出光面120、底面130和至少一个的入光面110，所述入光面110与出光面120垂直且相邻，所述出光面120与底面130相对设置；\n\n[0040]背光源600，所述背光源600位于所述入光面110的一侧，使得所述背光源600发出的光通过所述入光面110进入所述导光板100；\n\n[0041]柔性发光膜层300，所述出光面120设置有一条或多条沟槽200，所述柔性发光膜层300设置在所述沟槽200内。\n\n[0042]其中，所述背光源包括电路板和led。\n\n[0043]其中，所述沟槽200内还设置有柔性电路板400，所述柔性发光膜层300与柔性电路板400电性连接。\n\n[0044]其中，所述所述沟槽200之间相互平行，或呈一定角度交叉排列。当所述沟槽200交叉排列时，优选的，沟槽之间交叉角度为90°，交叉点位于导光板的中心，或者多个交叉点围绕中心设置，在这样的条件下，有利于大尺寸液晶显示面板的光源的补充。\n\n[0045]其中，所述导光板100具有至少一个弯折轴500，所述导光板100可沿所述弯折轴500弯折，所述沟槽200在所述出光面120的正投影为沿所述弯折轴500方向延伸的直条状。\n\n[0046]本申请实施例提供的一种柔性背光模组，通过在导光板100的出光面120设置多个沟槽200，可以释放一部分弯曲应力，实现导光板100周边或整体的可弯曲性。另一方面，沟槽200内设置柔性发光膜层300，起到了辅助发光的作用，突破了传统的侧入式背光模组因为面板弯曲而导致导光板100的出光不匀，或者大尺寸显示面板的导光板100出光不均，最后影响显示效果的情况，此外，沟槽200内的柔性发光膜层300也能起到补充沟槽阴影的作用。因此，本申请可以在液晶显示面板弯曲的状态下实现均匀的显示效果。\n\n[0047]在一些实施例中，所述出光面120具有四个端面，所述沟槽200设置在所述出光面120的至少一个端面。优选的，所述端面可为两个且相对设置，使得所述导光板100具有周边的可弯曲性。\n\n[0048]请参阅图1至图4所示，图1代表现有的一种柔性背光模组的结构示意图，包括导光板100和背光源600，导光板100包括出光面120、底面120和入光面110，其中箭头代表背光源600的入光方向；图2代表本申请实施例提供的一种柔性背光模组的结构示意图，从图中可看出柔性背光模组中的导光板100的下端设置有背光源600，所述背光模组为侧入式发光，导光板100的左右两个端面设置了含有柔性发光膜层300的沟槽200，使得导光板100具有左右的可弯曲性；图3代表本申请实施例提供的柔性背光模组的横截面结构示意图，其中箭头指的方向为柔性发光膜层300的发光方向，从图中还可以看出，由于背光源600的弯曲性较差，所述背光源600设置在未弯曲的部分，柔性背光模组的未弯曲部分光源由背光源600提供，而弯曲部分的光源为柔性发光膜层300来提供；图4表示本申请实施例提供的第二种柔性背光模组结构示意图，从图中可看出，柔性背光模组中的导光板100的下端设置有背光源600，上下两个端面设置了含有柔性发光膜层300的沟槽200，使得导光板100具有上下的可弯曲性。\n\n[0049]可以理解的是，上图仅代表部分导光板100周边的沟槽200的分布情况，沟槽200还可以同时分布在上下或者左右两个端面，或者每个端面设置不少于一条的沟槽200，只要能导光板100周边设置有沟槽200即可，具体此处不做限定。\n\n[0050]本申请实施例提供的一种柔性背光模组，通过在端面设置沟槽200，从而可以实现导光板100一定程度的周边弯曲。\n\n[0051]在一些实施例中，所述出光面120具有一中心，所述沟槽200穿过所述中心，将所述出光面120分为两个部分，使得所述导光板100可对折弯曲，从而实现显示面板的可对折弯曲。\n\n[0052]图5表示本申请实施例提供的第三种柔性背光模组结构示意图，其中沟槽200位于柔性背光模组中的导光板100的中间位置，导光板100的上下两端分别设置有背光源600；图6表示对应的柔性背光模组截面的结构示意图，其中箭头表示柔性发光膜层300以及背光源600的出光方向。所述背光源600补充未弯曲部分的光源，柔性发光膜层300补充弯曲部分的光源。\n\n[0053]本申请实施例提供的柔性背光模组，通过在导光板100的中间位置设置沟槽200，从而可以实现导光板100的对折弯曲，沟槽200内的柔性发光膜层300可以补充导光板100弯曲部分的光，解决了导光板100弯曲后，背光源600发出的光难以到达导光板100的弯曲部分，使得导光板100的出光不均匀的现象。\n\n[0054]在一些实施例中，所述沟槽200均匀间隔排布于所述出光面120。使得所述导光板100具有整体的可弯曲性。\n\n[0055]请参阅图7和图8，图7为本申请实施例提供的第四种柔性背光模组的结构示意图，从图中可以看出，沟槽200规律间隔排布于整个所述柔性背光模组的导光板100的出光面120，所述沟槽200呈横向设置，所述背光源600设置于导光板100的上下两端；图8为弯曲后的导光板100对应的截面图，其中箭头表示柔性发光膜层300以及背光源600的出光方向，所述背光源600为主光源，柔性发光膜层300为辅助光源。\n\n[0056]本申请实施例提供的一种柔性背光模组，使得所述导光板100具有整体的可弯曲性。此外也还有助于模组实验通过，尤其是可靠性测试。目前，在产品制作过程中，背光模组制作完成后，需要对其进行可靠性测试，在LCD模组结构，尤其是背光结构，可能会在测试中出现褶皱(膜拱)，其中褶皱的原因就包括有导光板100的弓起(逆翘)，导光板100的应力情况是导致导光板100弓起的主要原因之一，通过在导光板100上设置沟槽200，可以一定程度释放应力，从而有助于测试的通过。\n\n[0057]可以理解的是，上图仅代表以上实施例的一种情况，所述沟槽200之间还可以呈纵向设置，或者倾斜呈一定的角度，具体此处不做限定。\n\n[0058]在一些实施例中，所述沟槽200的横截面呈矩形、三角形、梯形或半圆形。\n\n[0059]在一些实施例中，参阅图9和图10，所述柔性发光膜层300为多个发光元件310组成，所述发光元件310为次毫米发光二极管(mini LED)或/和微型发光二极管(MicroLED)。\n\n[0060]次毫米发光二极管(mini LED)是指封装大小在0.1-0.2mm的LED，又称为次毫米发光二极管。\n\n[0061]微型发光二极管(MicroLED)。是将传统的LED结构进行微小化和矩阵化，并采用CMOS集成电路工艺制成驱动电路，来实现每一个像素点定址控制和单独驱动的显示技术。\n\n[0062]本申请实施例提供的一种柔性背光模组，由于利用了mini LED或MicroLED作为一种补充的背光源600，在具有柔性的同时，使面板色域非常好，对比度非常高。并且每个灯可以单独控制，因此可以实现区域调光，从而提升显示效果。\n\n[0063]所述沟槽200具有一底边210，多条侧边220，以及一开口，所述柔性发光膜层300的出光方向正对所述开口或/和所述侧边220。\n\n[0064]具体的，所述柔性发光膜层300分为上端和下端，所述柔性发光膜层300的出光方向为从所述下端至所述上端的方向，所述柔性电路板400位于所述柔性发光膜层300的下端。\n\n[0065]请参阅图9和图10，分别代表两种本申请实施例提供的凹槽部分的结构示意图，其中图9代表所述柔性发光膜层300的出光方向正对所述开口。图10代表所述柔性发光膜层300的出光方向正对所述沟槽200的两条侧边220。\n\n[0066]本申请实施例提供的柔性背光模组，提供了两种柔性发光膜层300的出光方向，即正对着沟槽200开口的方向和对着沟槽200侧边220的方向，这两种柔性发光膜层300的出光方向，均可以实现辅助发光的效果。可以理解的是，这两种发光的方向，可以应用在以上任一实施例中，此处不再赘述。\n\n[0067]需要说明的是，上述柔性背光模组实施例中仅描述了上述结构，可以理解的是，除了上述结构之外，本发明实施例柔性背光模组中，还可以根据需要包括任何其他的必要结构，如背板、反射片、扩散片、增光片、遮光胶等，具体此处不作限定。\n\n[0068]在上述实施例的基础上本申请还提供一种液晶显示面板，包括以上各实施例提供的背光模组。\n\n[0069]在上述实施例的基础上本申请还提供一种液晶显示装置，例如手机、液晶电视或可穿戴设备，包括以上实施例提供的液晶显示面板。\n\n[0070]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0071]以上对本申请实施例所提供的一种柔性背光模组和液晶显示面板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10830, 23884, '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种显示面板及其制造方法。\n\n背景技术\n\n[0002]现有的微发光二极管(Micro light-emitting diodes,MicroLED)显示面板制造方法是将发光二极管切割成微发光二极管，后将微发光二极管大批量转移到显示基板上。显示基板上需提前制作好像素驱动电路等。像素驱动电路等会占用显示基板的一定面积，影响显示面板的开口率。并且，研究表明在不同的电流下，微发光二极管的发光波长呈现U型变化。引发发光光谱偏移，面板显示不均等问题。此外，在玻璃基板上制作驱动电路的制程工艺落后，不利于量产。\n\n发明内容\n\n[0003]有鉴于此，本申请目的在于提供一种能够提高显示面板开口率，并且能够解决微发光二极管的发光光谱偏移，面板显示不均的问题的显示面板及其制造方法。\n\n[0004]本申请提供一种显示面板，所述显示面板包括基板以及设置在所述基板上的多个显示单元，所述多个显示单元呈阵列排布；其中，\n\n[0005]每个所述显示单元内集成有微发光二极管芯片以及与所述微发光二极管芯片电连接的脉冲宽度调制芯片，所述脉冲宽度调制芯片中形成有脉冲宽度调制电路，所述脉冲宽度调制电路用于控制所述微发光二极管芯片的发光时间。\n\n[0006]在一种实施方式中，所述微发光二极管芯片与所述脉冲宽度调制芯片在垂直于所述显示面板的显示面的方向上层叠设置。\n\n[0007]在一种实施方式中，所述脉冲宽度调制芯片绑定于所述基板上，所述微发光二极管芯片设置于所述脉冲宽度调制芯片远离所述基板一侧。\n\n[0008]在一种实施方式中，每一所述脉冲宽度调制芯片电连接并控制一个或多个所述微发光二极管芯片的发光。\n\n[0009]在一种实施方式中，所述脉冲宽度调制芯片的尺寸为几十微米。\n\n[0010]在一种实施方式中，所述基板上还设置有电路元件以及电连接所述显示单元与所述电路元件的走线，所述微发光二极管芯片、所述脉冲宽度调制芯片、所述电路元件共同构成所述显示面板的像素驱动电路。\n\n[0011]在一种实施方式中，所述像素驱动电路包括输入单元、与所述输入单元耦合的控制单元以及与所述控制单元耦合的发光单元，所述输入单元包括PWM电路扫描信号、PWM电路数据信号、PAM电路扫描信号以及PAM电路数据信号；\n\n[0012]所述控制单元包括与所述PWM电路扫描信号、PWM电路数据信号电连接的PWM驱动电路、与所述PWM驱动电路电连接的第一晶体管、与所述PAM电路扫描信号以及所述PAM电路数据信号电连接的第二晶体管；\n\n[0013]所述发光单元包括所述微发光二极管芯片、电连接于所述微发光二极管芯片的第三晶体管以及电连接于所述第三晶体管的存储电容。\n\n[0014]在一种实施方式中，所述显示面板还包括用于封装所述显示单元的封装部。\n\n[0015]在一种实施方式中，所述基板上设置有多个电接触点，所述多个接触点与所述显示单元一一对应，每一所述显示单元绑定于对应所述电接触点上。\n\n[0016]本申请还提供一种显示面板的制造方法，其包括以下步骤：\n\n[0017]提供第一衬底，在第一衬底上形成微发光二极管芯片，提供第二衬底，在第二衬底上形成脉冲宽度调制芯片，所述脉冲宽度调制芯片中形成有脉冲宽度调制电路，所述脉冲宽度调制电路用于控制所述微发光二极管芯片的发光时间；\n\n[0018]将所述微发光二极管芯片转移至所述第二衬底上，与所述脉冲宽度调制芯片电连接以形成多个显示单元；\n\n[0019]提供基板，将多个所述显示单元绑定在所述基板上。\n\n[0020]相较于现有技术，本申请的显示面板采用脉冲宽度调制(Pulse WidthModulation，PWM)驱动电路，PWM驱动电路可以降低电流密度对微发光二极管芯片发光的影响，减少色偏问题的发生，还可以对TFT阈值电压进行补偿，改善显示均匀性。相较于在玻璃基板上制作驱动电路，本申请的显示面板的制造方法利用集成电路制作工艺形成脉冲宽度调制芯片，集成电路制作工艺更加先进，能够降低制造难度。玻璃基板上只需制作简单的走线用于驱动单元芯片。并且玻璃基板相较于其他基板更容易实现Mirco-LED的巨量转移，进一步降低了制造难度。\n\n附图说明\n\n[0021]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0022]图1为本申请的第一实施方式的显示面板的结构示意图。\n\n[0023]图2为本申请的第一实施方式的显示面板的显示单元的示意图。\n\n[0024]图3为本申请的第一实施方式的显示面板的像素驱动电路的等价电路图。\n\n[0025]图4(a)至图4(c)为本申请的第二实施方式的显示面板的制造方法的步骤示意图。\n\n具体实施方式\n\n[0026]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0027]请参考图1和图2，本申请第一实施方式的显示面板100为微发光二极管芯片显示面板。显示面板100包括基板10以及设置在基板10上的多个显示单元20。第一基板10可以为玻璃基板。多个显示单元20呈阵列排布，用于在控制器的控制下显示图像。每个显示单元20均内集成有微发光二极管芯片21以及与微发光二极管芯片21连接的脉冲宽度调制(PulseWidth Modulation，PWM)芯片22。其中，脉冲宽度调制芯片22中形成有脉冲宽度调制电路22a。脉冲宽度调制电路22a用于控制微发光二极管芯片的发光时间。PWM驱动电路22a可以使用现有技术中的任一PWM驱动电路结构，此处不再赘述。\n\n[0028]在一个实施方式中，微发光二极管芯片21与脉冲宽度调制芯片22在垂直于显示面板100的显示面的方向上层叠设置。脉冲宽度调制芯片22和微发光二极管芯片21集成在一起，总共只占用一个脉冲宽度调制芯片22或者微发光二极管芯片21的面积(视二者的大小而定)。在一个实施方式中，脉冲宽度调制芯片22设置于微发光二极管芯片21与基板10之间，以便光线出射。具体地，脉冲宽度调制芯片22绑定于基板10上。微发光二极管芯片21设置于脉冲宽度调制芯片22远离基板10一侧。可以理解，在另一个实施方式中，微发光二极管芯片21与脉冲宽度调制芯片22也可以水平排列在显示面板100的显示面上。\n\n[0029]在每一显示单元20内，每一脉冲宽度调制芯片22可以电连接并控制一个或多个微发光二极管芯片21的发光。微发光二极管芯片21可以为蓝色微发光二极管芯片、绿色微发光二极管芯片或者红色微发光二极管芯片等。脉冲宽度调制芯片22上具有连接微发光二极管芯片21的触点，根据所连接的微发光二极管芯片21数量来设置触点数量。\n\n[0030]现有技术中的脉冲宽度调制电路如果直接形成在基板上，其制程精度只能达到微米级别。在本申请中，以集成电路的制造方法将脉冲宽度调制电路做成脉冲宽度调制芯片22，可以达到纳米级别的制造精度。具体地能够达到几百纳米的制造精度，且可以将脉冲宽度调制芯片22控制在几十微米，例如20微米左右。\n\n[0031]请参考图2和3，基板10上还设置有电路元件11以及电连接显示单元20与电路元件11的走线12。微发光二极管芯片21、脉冲宽度调制芯片22、电路元件11共同构成显示面板100的像素驱动电路101。电路元件12具包括晶体管和电容等。此外，基板10上设置有多个电接触点13。多个接触点13与显示单元20一一对应。每一显示单元20绑定于对应电接触点13上。\n\n[0032]像素驱动电路101包括：输入单元101a、与输入单元101a耦合的控制单元101b以及与控制单元101b耦合的发光单元101c。控制单元101b用于驱动发光单元101c发光。\n\n[0033]具体地，输入单元101a用于检测发光单元101c的光线色度信息并将光线色度信息传输至控制单元101b。其中，输入单元101a包括PWM电路扫描信号(PWM_SCAN)、PWM电路数据信号(PWM_DATA)、PAM电路扫描信号(PAM_SCAN)以及PAM电路数据信号(V_PAM)。\n\n[0034]具体地，控制单元101b包括与PWM电路扫描信号(PWM_SCAN)、PWM电路数据信号(PWM_DATA)电连接的PWM驱动电路22a、与PWM驱动电路22a电连接的第一晶体管T1、与PAM电路扫描信号(PAM_SCAN)以及PAM电路数据信号(V_PAM)电连接的第二晶体管T2。PWM电路扫描信号(PWM_SCAN)通过PWM驱动电路22a与第一晶体管T1的栅极连接，用于对PWM控制单元进行逐行扫描；PWM电路数据信号(PWM_DATA)通过PWM驱动电路22a与第一晶体管T1的栅极连接，用于控制发光单元的发光时间。第一晶体管T1的源极接地，相当于电连接于复位信号Vi；PAM电路扫描信号(PAM_SCAN)与第二晶体管T2的栅极连接，用于对PAM控制单元进行逐行扫描；PAM电路数据信号(V_PAM)与第二晶体管T2的源极连接，用于控制发光单元中驱动电流的大小；具体地，PAM电路数据信号(V_PAM)的电压大小为固定参考电压(VREF)。\n\n[0035]发光单元30包括微发光二极管芯片21、电连接于微发光二极管芯片21的第三晶体管T3以及电连接于第三晶体管T3的栅极和漏极之间的存储电容CST。\n\n[0036]显示面板100的具体工作过程如下：\n\n[0037]PAM电路扫描信号(PAM_SCAN)逐行扫描，并写入PAM电路数据信号(PAM_DATA)，PAM电路数据信号(V_PAM)可由一个固定参考电压(VREF)提供；之后，PWM电路扫描信号(PWM_SCAN)逐行扫描，并写入PWM电路数据信号(PWM_DATA)，PWM电路数据信号(PWM_DATA)的大小决定发光单元101c的发光时间；之后，PWM电路数据信号(PWM_DATA)输出到脉冲宽度调制电路20a，脉冲宽度调制电路20a将不同的PWM电路数据信号(PWM_DATA)转换为发光单元101c的发光控制时间，最终将存储电容内的电荷释放，完成输入电压到发光单元101c的发光时间的转换。\n\n[0038]在本申请中，通过对PWM驱动电路输入相同大小的控制电压V_CTRL，控制驱动薄膜晶体管(Thin Film Transistor，TFT)产生相同的电流，同时对微发光二极管芯片的发光时间进行控制，可以发出不同亮度的光。现有的像素驱动电路中，像素电压由简单的脉冲幅值调制(Pulse Amplitude Modulation，PAM)电压控制，但PAM电压固定统一，使微发光二极管芯片的电流相同，无法解决光谱偏移和显示不均的问题。而PWM驱动电路对微发光二极管芯片的发光时间进行控制，能够使微发光二极管芯片发出不同亮度的光。PWM驱动电路可以降低电流密度对MicroLED发光的影响，减少色偏问题的发生，还可以对TFT阈值电压进行补偿，改善显示均匀性。\n\n[0039]此外，显示面板100还包括用于封装显示单元20的封装部30。封装部30可以封装一个显示单元20，也可以封装多个显示单元20。封装部30包裹在微发光二极管芯片21和脉冲宽度调制芯片22外面，并将二者封装形成一个整体。\n\n[0040]显示面板100还包括与第一基板10相对设置的第二基板40。第一基板10与第二基板40之间还设置有与显示单元20相对设置的色转换层50和滤光片层60。色转换层50和滤光片层60用于对蓝色微发光二极管芯片发出的光进行转换和纯化。在本申请其他实施方式中，采用红、绿、蓝三种颜色的微发光二极管芯片进行显示，则不需要设置色转换层50。\n\n[0041]请参考图4(a)至图4(c)，本申请第二实施方式提供一种显示面板的制造方法，其包括以下步骤：\n\n[0042]S1：提供第一衬底200，在第一衬底200上形成微发光二极管芯片21。提供第二衬底300，在第二衬底300上形成脉冲宽度调制芯片22。脉冲宽度调制芯片22中形成有脉冲宽度调制电路22a。脉冲宽度调制电路22a用于控制微发光二极管芯片21的发光时间。\n\n[0043]在第一衬底200上形成微发光二极管芯片21和在第二衬底300上形成脉冲宽度调制芯片22的步骤独立进行。\n\n[0044]微发光二极管芯片21的制作步骤包括：在第一衬底200上外延制作发光二极管(LED)芯片，再将制作出的LED芯片切割成微米级大小的微发光二极管芯片21。第一衬底200为蓝宝石衬底。微发光二极管芯片21可以为蓝色微发光二极管芯片、绿色微发光二极管芯片或者红色微发光二极管芯片等。\n\n[0045]在本实施方式中，微发光二极管芯片21全部为蓝色微发光二极管芯片。\n\n[0046]脉冲宽度调制芯片22包括脉冲宽度调制(Pulse Width Modulation，PWM)驱动电路22a。PWM驱动电路22a可以使用现有技术中的任一PWM驱动电路结构。脉冲宽度调制芯片22的制作步骤包括在第二衬底300上通过集成电路的方法制作大片PWM驱动电路，再将大片PWM驱动电路切割并形成微米级的脉冲宽度调制芯片22。第二衬底300为晶圆。\n\n[0047]本申请的PWM驱动电路采用集成电路工艺制作，集成电路制作工艺相较于在玻璃基板上制作现有技术中的像素驱动电路的工艺更加先进，可以达到纳米级别的制造精度。具体地能够达到几百纳米的制造精度，且可以将脉冲宽度调制芯片22控制在微米级的尺寸，例如20微米左右。从而，有利于显示面板的量产。\n\n[0048]S2：将微发光二极管芯片21转移至第二衬底300上，与脉冲宽度调制芯片22电连接以形成多个显示单元30。\n\n[0049]在每一显示单元20内，，每一脉冲宽度调制芯片22可以电连接并控制一个或多个微发光二极管芯片21的发光。在此步骤中，还可以包括利用封装部30(参考图1)将微发光二极管芯片21和脉冲宽度调制芯片22封装形成一个整体的步骤。\n\n[0050]S3：提供第一基板10，将多个显示单元20绑定在第一基板10上。在此步骤中，对形成在第二衬底300上的显示单元20进行拾取(sorting)和分级(binning)，将显示单元20转移并绑定在第一基板10上。\n\n[0051]在一个实施方式中，显示单元20以微发光二极管芯片21与脉冲宽度调制芯片22在垂直于显示面板100的显示面的方向上层叠设置的方式绑定在第一基板10上。在一个实施方式中，脉冲宽度调制芯片22设置于微发光二极管芯片21与基板10之间，以便光线出射。具体地，脉冲宽度调制芯片22绑定于基板10上。微发光二极管芯片21设置于脉冲宽度调制芯片21远离基板10一侧。在另一个实施方式中，微发光二极管芯片21与脉冲宽度调制芯片22也可以水平排列在显示面板100的显示面上。\n\n[0052]第一基板10为玻璃基板。玻璃基板相较于其他基板更容易实现显示单元20的巨量转移。请一并参考图2，图2为显示面板100上的显示单元的放大图。\n\n[0053]基板10上还设置有电路元件11以及电连接显示单元20与电路元件11的走线12。微发光二极管芯片21、脉冲宽度调制芯片22、电路元件11共同构成显示面板100的像素驱动电路101。电路元件12具包括晶体管和电容等。此外，基板10上设置有多个电接触点13。多个接触点13与显示单元20一一对应。每一显示单元20绑定于对应电接触点13上。\n\n[0054]像素驱动电路101的结构如第一实施方式所述，在此不再赘述。\n\n[0055]除了上述步骤，显示面板的制造方法还可以包括在第二基板上制作色转换层和滤色层的步骤，以及将第一基板和第二基板对位贴合形成显示面板的步骤。\n\n[0056]通过上述制造方法可以制得带有PWM驱动功能的微发光二极管芯片显示面板。\n\n[0057]相较于现有技术，本申请的显示面板采用PWM驱动电路，PWM驱动电路可以降低电流密度对微发光二极管芯片发光的影响，减少色偏问题的发生，还可以对TFT阈值电压进行补偿，改善显示均匀性。相较于玻璃基板上制作驱动电路，本申请的显示面板的制造方法利用集成电路制作工艺形成脉冲宽度调制芯片，集成电路制作工艺更加先进，能够降低制造难度。玻璃基板上只需制作简单的走线用于驱动显示单元。并且玻璃基板相较于其他基板更容易实现Mirco-LED的巨量转移，进一步降低了制造难度。\n\n[0058]以上对本申请实施例提供的液晶显示组件进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种显示面板及其制造方法。\n\n背景技术\n\n[0002]现有的微发光二极管(Micro light-emitting diodes,MicroLED)显示面板制造方法是将发光二极管切割成微发光二极管，后将微发光二极管大批量转移到显示基板上。显示基板上需提前制作好像素驱动电路等。像素驱动电路等会占用显示基板的一定面积，影响显示面板的开口率。并且，研究表明在不同的电流下，微发光二极管的发光波长呈现U型变化。引发发光光谱偏移，面板显示不均等问题。此外，在玻璃基板上制作驱动电路的制程工艺落后，不利于量产。\n\n发明内容\n\n[0003]有鉴于此，本申请目的在于提供一种能够提高显示面板开口率，并且能够解决微发光二极管的发光光谱偏移，面板显示不均的问题的显示面板及其制造方法。\n\n[0004]本申请提供一种显示面板，所述显示面板包括基板以及设置在所述基板上的多个显示单元，所述多个显示单元呈阵列排布；其中，\n\n[0005]每个所述显示单元内集成有微发光二极管芯片以及与所述微发光二极管芯片电连接的脉冲宽度调制芯片，所述脉冲宽度调制芯片中形成有脉冲宽度调制电路，所述脉冲宽度调制电路用于控制所述微发光二极管芯片的发光时间。\n\n[0006]在一种实施方式中，所述微发光二极管芯片与所述脉冲宽度调制芯片在垂直于所述显示面板的显示面的方向上层叠设置。\n\n[0007]在一种实施方式中，所述脉冲宽度调制芯片绑定于所述基板上，所述微发光二极管芯片设置于所述脉冲宽度调制芯片远离所述基板一侧。\n\n[0008]在一种实施方式中，每一所述脉冲宽度调制芯片电连接并控制一个或多个所述微发光二极管芯片的发光。\n\n[0009]在一种实施方式中，所述脉冲宽度调制芯片的尺寸为几十微米。\n\n[0010]在一种实施方式中，所述基板上还设置有电路元件以及电连接所述显示单元与所述电路元件的走线，所述微发光二极管芯片、所述脉冲宽度调制芯片、所述电路元件共同构成所述显示面板的像素驱动电路。\n\n[0011]在一种实施方式中，所述像素驱动电路包括输入单元、与所述输入单元耦合的控制单元以及与所述控制单元耦合的发光单元，所述输入单元包括PWM电路扫描信号、PWM电路数据信号、PAM电路扫描信号以及PAM电路数据信号；\n\n[0012]所述控制单元包括与所述PWM电路扫描信号、PWM电路数据信号电连接的PWM驱动电路、与所述PWM驱动电路电连接的第一晶体管、与所述PAM电路扫描信号以及所述PAM电路数据信号电连接的第二晶体管；\n\n[0013]所述发光单元包括所述微发光二极管芯片、电连接于所述微发光二极管芯片的第三晶体管以及电连接于所述第三晶体管的存储电容。\n\n[0014]在一种实施方式中，所述显示面板还包括用于封装所述显示单元的封装部。\n\n[0015]在一种实施方式中，所述基板上设置有多个电接触点，所述多个接触点与所述显示单元一一对应，每一所述显示单元绑定于对应所述电接触点上。\n\n[0016]本申请还提供一种显示面板的制造方法，其包括以下步骤：\n\n[0017]提供第一衬底，在第一衬底上形成微发光二极管芯片，提供第二衬底，在第二衬底上形成脉冲宽度调制芯片，所述脉冲宽度调制芯片中形成有脉冲宽度调制电路，所述脉冲宽度调制电路用于控制所述微发光二极管芯片的发光时间；\n\n[0018]将所述微发光二极管芯片转移至所述第二衬底上，与所述脉冲宽度调制芯片电连接以形成多个显示单元；\n\n[0019]提供基板，将多个所述显示单元绑定在所述基板上。\n\n[0020]相较于现有技术，本申请的显示面板采用脉冲宽度调制(Pulse WidthModulation，PWM)驱动电路，PWM驱动电路可以降低电流密度对微发光二极管芯片发光的影响，减少色偏问题的发生，还可以对TFT阈值电压进行补偿，改善显示均匀性。相较于在玻璃基板上制作驱动电路，本申请的显示面板的制造方法利用集成电路制作工艺形成脉冲宽度调制芯片，集成电路制作工艺更加先进，能够降低制造难度。玻璃基板上只需制作简单的走线用于驱动单元芯片。并且玻璃基板相较于其他基板更容易实现Mirco-LED的巨量转移，进一步降低了制造难度。\n\n附图说明\n\n[0021]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0022]图1为本申请的第一实施方式的显示面板的结构示意图。\n\n[0023]图2为本申请的第一实施方式的显示面板的显示单元的示意图。\n\n[0024]图3为本申请的第一实施方式的显示面板的像素驱动电路的等价电路图。\n\n[0025]图4(a)至图4(c)为本申请的第二实施方式的显示面板的制造方法的步骤示意图。\n\n具体实施方式\n\n[0026]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0027]请参考图1和图2，本申请第一实施方式的显示面板100为微发光二极管芯片显示面板。显示面板100包括基板10以及设置在基板10上的多个显示单元20。第一基板10可以为玻璃基板。多个显示单元20呈阵列排布，用于在控制器的控制下显示图像。每个显示单元20均内集成有微发光二极管芯片21以及与微发光二极管芯片21连接的脉冲宽度调制(PulseWidth Modulation，PWM)芯片22。其中，脉冲宽度调制芯片22中形成有脉冲宽度调制电路22a。脉冲宽度调制电路22a用于控制微发光二极管芯片的发光时间。PWM驱动电路22a可以使用现有技术中的任一PWM驱动电路结构，此处不再赘述。\n\n[0028]在一个实施方式中，微发光二极管芯片21与脉冲宽度调制芯片22在垂直于显示面板100的显示面的方向上层叠设置。脉冲宽度调制芯片22和微发光二极管芯片21集成在一起，总共只占用一个脉冲宽度调制芯片22或者微发光二极管芯片21的面积(视二者的大小而定)。在一个实施方式中，脉冲宽度调制芯片22设置于微发光二极管芯片21与基板10之间，以便光线出射。具体地，脉冲宽度调制芯片22绑定于基板10上。微发光二极管芯片21设置于脉冲宽度调制芯片22远离基板10一侧。可以理解，在另一个实施方式中，微发光二极管芯片21与脉冲宽度调制芯片22也可以水平排列在显示面板100的显示面上。\n\n[0029]在每一显示单元20内，每一脉冲宽度调制芯片22可以电连接并控制一个或多个微发光二极管芯片21的发光。微发光二极管芯片21可以为蓝色微发光二极管芯片、绿色微发光二极管芯片或者红色微发光二极管芯片等。脉冲宽度调制芯片22上具有连接微发光二极管芯片21的触点，根据所连接的微发光二极管芯片21数量来设置触点数量。\n\n[0030]现有技术中的脉冲宽度调制电路如果直接形成在基板上，其制程精度只能达到微米级别。在本申请中，以集成电路的制造方法将脉冲宽度调制电路做成脉冲宽度调制芯片22，可以达到纳米级别的制造精度。具体地能够达到几百纳米的制造精度，且可以将脉冲宽度调制芯片22控制在几十微米，例如20微米左右。\n\n[0031]请参考图2和3，基板10上还设置有电路元件11以及电连接显示单元20与电路元件11的走线12。微发光二极管芯片21、脉冲宽度调制芯片22、电路元件11共同构成显示面板100的像素驱动电路101。电路元件12具包括晶体管和电容等。此外，基板10上设置有多个电接触点13。多个接触点13与显示单元20一一对应。每一显示单元20绑定于对应电接触点13上。\n\n[0032]像素驱动电路101包括：输入单元101a、与输入单元101a耦合的控制单元101b以及与控制单元101b耦合的发光单元101c。控制单元101b用于驱动发光单元101c发光。\n\n[0033]具体地，输入单元101a用于检测发光单元101c的光线色度信息并将光线色度信息传输至控制单元101b。其中，输入单元101a包括PWM电路扫描信号(PWM_SCAN)、PWM电路数据信号(PWM_DATA)、PAM电路扫描信号(PAM_SCAN)以及PAM电路数据信号(V_PAM)。\n\n[0034]具体地，控制单元101b包括与PWM电路扫描信号(PWM_SCAN)、PWM电路数据信号(PWM_DATA)电连接的PWM驱动电路22a、与PWM驱动电路22a电连接的第一晶体管T1、与PAM电路扫描信号(PAM_SCAN)以及PAM电路数据信号(V_PAM)电连接的第二晶体管T2。PWM电路扫描信号(PWM_SCAN)通过PWM驱动电路22a与第一晶体管T1的栅极连接，用于对PWM控制单元进行逐行扫描；PWM电路数据信号(PWM_DATA)通过PWM驱动电路22a与第一晶体管T1的栅极连接，用于控制发光单元的发光时间。第一晶体管T1的源极接地，相当于电连接于复位信号Vi；PAM电路扫描信号(PAM_SCAN)与第二晶体管T2的栅极连接，用于对PAM控制单元进行逐行扫描；PAM电路数据信号(V_PAM)与第二晶体管T2的源极连接，用于控制发光单元中驱动电流的大小；具体地，PAM电路数据信号(V_PAM)的电压大小为固定参考电压(VREF)。\n\n[0035]发光单元30包括微发光二极管芯片21、电连接于微发光二极管芯片21的第三晶体管T3以及电连接于第三晶体管T3的栅极和漏极之间的存储电容CST。\n\n[0036]显示面板100的具体工作过程如下：\n\n[0037]PAM电路扫描信号(PAM_SCAN)逐行扫描，并写入PAM电路数据信号(PAM_DATA)，PAM电路数据信号(V_PAM)可由一个固定参考电压(VREF)提供；之后，PWM电路扫描信号(PWM_SCAN)逐行扫描，并写入PWM电路数据信号(PWM_DATA)，PWM电路数据信号(PWM_DATA)的大小决定发光单元101c的发光时间；之后，PWM电路数据信号(PWM_DATA)输出到脉冲宽度调制电路20a，脉冲宽度调制电路20a将不同的PWM电路数据信号(PWM_DATA)转换为发光单元101c的发光控制时间，最终将存储电容内的电荷释放，完成输入电压到发光单元101c的发光时间的转换。\n\n[0038]在本申请中，通过对PWM驱动电路输入相同大小的控制电压V_CTRL，控制驱动薄膜晶体管(Thin Film Transistor，TFT)产生相同的电流，同时对微发光二极管芯片的发光时间进行控制，可以发出不同亮度的光。现有的像素驱动电路中，像素电压由简单的脉冲幅值调制(Pulse Amplitude Modulation，PAM)电压控制，但PAM电压固定统一，使微发光二极管芯片的电流相同，无法解决光谱偏移和显示不均的问题。而PWM驱动电路对微发光二极管芯片的发光时间进行控制，能够使微发光二极管芯片发出不同亮度的光。PWM驱动电路可以降低电流密度对MicroLED发光的影响，减少色偏问题的发生，还可以对TFT阈值电压进行补偿，改善显示均匀性。\n\n[0039]此外，显示面板100还包括用于封装显示单元20的封装部30。封装部30可以封装一个显示单元20，也可以封装多个显示单元20。封装部30包裹在微发光二极管芯片21和脉冲宽度调制芯片22外面，并将二者封装形成一个整体。\n\n[0040]显示面板100还包括与第一基板10相对设置的第二基板40。第一基板10与第二基板40之间还设置有与显示单元20相对设置的色转换层50和滤光片层60。色转换层50和滤光片层60用于对蓝色微发光二极管芯片发出的光进行转换和纯化。在本申请其他实施方式中，采用红、绿、蓝三种颜色的微发光二极管芯片进行显示，则不需要设置色转换层50。\n\n[0041]请参考图4(a)至图4(c)，本申请第二实施方式提供一种显示面板的制造方法，其包括以下步骤：\n\n[0042]S1：提供第一衬底200，在第一衬底200上形成微发光二极管芯片21。提供第二衬底300，在第二衬底300上形成脉冲宽度调制芯片22。脉冲宽度调制芯片22中形成有脉冲宽度调制电路22a。脉冲宽度调制电路22a用于控制微发光二极管芯片21的发光时间。\n\n[0043]在第一衬底200上形成微发光二极管芯片21和在第二衬底300上形成脉冲宽度调制芯片22的步骤独立进行。\n\n[0044]微发光二极管芯片21的制作步骤包括：在第一衬底200上外延制作发光二极管(LED)芯片，再将制作出的LED芯片切割成微米级大小的微发光二极管芯片21。第一衬底200为蓝宝石衬底。微发光二极管芯片21可以为蓝色微发光二极管芯片、绿色微发光二极管芯片或者红色微发光二极管芯片等。\n\n[0045]在本实施方式中，微发光二极管芯片21全部为蓝色微发光二极管芯片。\n\n[0046]脉冲宽度调制芯片22包括脉冲宽度调制(Pulse Width Modulation，PWM)驱动电路22a。PWM驱动电路22a可以使用现有技术中的任一PWM驱动电路结构。脉冲宽度调制芯片22的制作步骤包括在第二衬底300上通过集成电路的方法制作大片PWM驱动电路，再将大片PWM驱动电路切割并形成微米级的脉冲宽度调制芯片22。第二衬底300为晶圆。\n\n[0047]本申请的PWM驱动电路采用集成电路工艺制作，集成电路制作工艺相较于在玻璃基板上制作现有技术中的像素驱动电路的工艺更加先进，可以达到纳米级别的制造精度。具体地能够达到几百纳米的制造精度，且可以将脉冲宽度调制芯片22控制在微米级的尺寸，例如20微米左右。从而，有利于显示面板的量产。\n\n[0048]S2：将微发光二极管芯片21转移至第二衬底300上，与脉冲宽度调制芯片22电连接以形成多个显示单元30。\n\n[0049]在每一显示单元20内，，每一脉冲宽度调制芯片22可以电连接并控制一个或多个微发光二极管芯片21的发光。在此步骤中，还可以包括利用封装部30(参考图1)将微发光二极管芯片21和脉冲宽度调制芯片22封装形成一个整体的步骤。\n\n[0050]S3：提供第一基板10，将多个显示单元20绑定在第一基板10上。在此步骤中，对形成在第二衬底300上的显示单元20进行拾取(sorting)和分级(binning)，将显示单元20转移并绑定在第一基板10上。\n\n[0051]在一个实施方式中，显示单元20以微发光二极管芯片21与脉冲宽度调制芯片22在垂直于显示面板100的显示面的方向上层叠设置的方式绑定在第一基板10上。在一个实施方式中，脉冲宽度调制芯片22设置于微发光二极管芯片21与基板10之间，以便光线出射。具体地，脉冲宽度调制芯片22绑定于基板10上。微发光二极管芯片21设置于脉冲宽度调制芯片21远离基板10一侧。在另一个实施方式中，微发光二极管芯片21与脉冲宽度调制芯片22也可以水平排列在显示面板100的显示面上。\n\n[0052]第一基板10为玻璃基板。玻璃基板相较于其他基板更容易实现显示单元20的巨量转移。请一并参考图2，图2为显示面板100上的显示单元的放大图。\n\n[0053]基板10上还设置有电路元件11以及电连接显示单元20与电路元件11的走线12。微发光二极管芯片21、脉冲宽度调制芯片22、电路元件11共同构成显示面板100的像素驱动电路101。电路元件12具包括晶体管和电容等。此外，基板10上设置有多个电接触点13。多个接触点13与显示单元20一一对应。每一显示单元20绑定于对应电接触点13上。\n\n[0054]像素驱动电路101的结构如第一实施方式所述，在此不再赘述。\n\n[0055]除了上述步骤，显示面板的制造方法还可以包括在第二基板上制作色转换层和滤色层的步骤，以及将第一基板和第二基板对位贴合形成显示面板的步骤。\n\n[0056]通过上述制造方法可以制得带有PWM驱动功能的微发光二极管芯片显示面板。\n\n[0057]相较于现有技术，本申请的显示面板采用PWM驱动电路，PWM驱动电路可以降低电流密度对微发光二极管芯片发光的影响，减少色偏问题的发生，还可以对TFT阈值电压进行补偿，改善显示均匀性。相较于玻璃基板上制作驱动电路，本申请的显示面板的制造方法利用集成电路制作工艺形成脉冲宽度调制芯片，集成电路制作工艺更加先进，能够降低制造难度。玻璃基板上只需制作简单的走线用于驱动显示单元。并且玻璃基板相较于其他基板更容易实现Mirco-LED的巨量转移，进一步降低了制造难度。\n\n[0058]以上对本申请实施例提供的液晶显示组件进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10831, 23885, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种显示面板及其制备方法、显示装置。\n\n背景技术\n\n[0002]Mini/MicroLED(MLED)显示技术在近两年进入加速发展阶段，可以使用在中小型高附加价值显示器应用领域。相较OLED屏幕，MLED显示可以在成本、对比度、高亮度和轻薄外形上表现出更佳性能。\n\n[0003]在MLED显示技术中，背板技术作为关键技术，优化背板技术对于MLED显示技术至关重要，而常规的BCE_TFT背板技术采用6mask技术，其中M2使用Mo/Cu金属作为LEDbonding Pad，ITO作为COF bonding保护层，防止Cu氧化；然而，该技术制程温度window较低，PV成膜温度提高易造成Cu电极氧化，影响导电性能；此外，金属氧化物半导体所需热处理温度随材料成分变化，部分氧化物需要高温制程，该技术不能更好的兼容。目前，通常使用MoTiNi(MTD)合金作为M2，该MTD合金具备高稳定性，抗氧化能力强，提高制程window，但是，该合金与LED bonding所需锡膏结合力较差，影响绑定效果。\n\n发明内容\n\n[0004]本申请提供了一种显示面板及其制备方法、显示装置，能够有效解决MTD与焊接材料结合力较差的问题，可以减少显示面板制程，降低制造成本。\n\n[0005]一种显示面板，包括显示区和围绕所述显示区的非显示区，所述显示区包括多个像素区域；\n\n[0006]所述显示面板包括基板以及设置在所述基板上的焊垫和信号线，所述焊垫对应所述像素区域设置，且所述焊垫与所述信号线电连接；\n\n[0007]所述焊垫的材料包括钼/铜的叠层、钼钛合金/铜的叠层以及钛钼镍合金/铜的叠层中的至少一种；\n\n[0008]其中，微型发光二极管上的焊接电极通过焊接材料与所述焊垫电连接。\n\n[0009]本申请的显示面板中，所述显示面板还包括位于所述基板上的第一电极层和第二电极层；所述第一电极层包括间隔设置的第一电极、栅极以及所述焊垫；所述第二电极层包括间隔设置的第二电极、源极以及漏极；其中，所述第一电极和所述第二电极位于所述非显示区。\n\n[0010]本申请的显示面板中，所述显示面板还包括对应所述非显示区的绑定引线，所述信号线由所述显示区向所述非显示区延伸并与所述绑定引线电连接；所述绑定引线包括所述第一电极和所述第二电极；\n\n[0011]其中，电路板通过所述绑定引线绑定于所述显示面板上，并且通过所述绑定引线与所述信号线之间进行信号传输。\n\n[0012]本申请的显示面板中，所述第二电极的材料为钛钼镍合金/铜/钛钼镍合金叠层。\n\n[0013]本申请的显示面板中，所述显示面板还包括位于所述第一电极层和所述第二电极层之间的绝缘层，以及位于所述第二电极层上方的钝化层；所述绝缘层和所述钝化层开设有将所述焊垫部分暴露的第一开孔，所述钝化层开设有将所述第二电极部分暴露的第二开孔；其中，所述第一开孔中容纳有焊接材料。\n\n[0014]本申请还提供一种显示面板的制备方法，包括显示区和围绕所述显示区的非显示区，所述显示区包括多个像素区域；所述制备方法包括：\n\n[0015]步骤S10：在基板上形成第一金属层，对所述第一金属层图案化处理，形成第一电极层，所述第一电极层包括对应所述非显示区设置的第一电极、对应所述显示区设置的栅极、以及对应所述像素区域设置焊垫；\n\n[0016]步骤S20：在所述第一电极层上形成栅极绝缘层和有源层，所述有源层包括沟道区、源极接触区以及漏极接触区，所述源极接触区和所述漏极接触区之间由所述沟道区隔开；\n\n[0017]步骤S30：对所述栅极绝缘层图案化处理，形成位于所述第一电极上方的过孔；\n\n[0018]步骤S40：在所述有源层和所述栅极绝缘层上形成第二金属层，对所述第二金属层图案化处理，形成第二电极层，所述第二电极层包括位于所述第一电极上方的第二电极，与所述源极接触区相接触的源极，以及与所述漏极接触区相接触的漏极；其中，所述第二电极通过所述过孔与所述第一电极相接触；\n\n[0019]步骤S50：在所述第二电极层上方形成钝化层，对所述钝化层图案化处理，形成将所述焊垫部分暴露的开孔，以及将所述第二电极部分暴露的开孔；\n\n[0020]步骤S60：向对应所述焊垫的开孔内加入焊接材料，将微型发光二极管的焊接电极通过所述焊接材料与所述焊垫电连接。\n\n[0021]本申请的制备方法中，所述显示面板还包括对应所述非显示区的绑定引线，所述信号线由所述显示区向所述非显示区延伸并与所述绑定引线电连接；所述绑定引线包括所述第一电极和所述第二电极；\n\n[0022]其中，电路板通过所述绑定引线绑定于所述显示面板上，并且通过所述绑定引线与所述信号线之间进行信号传输。\n\n[0023]本申请的制备方法中，所述第一金属层的材料包括钼/铜的叠层、钼钛合金/铜的叠层以及钛钼镍合金/铜的叠层中的至少一种。\n\n[0024]本申请的制备方法中，所述第二金属层的材料为钛钼镍合金/铜/钛钼镍合金叠层。\n\n[0025]本申请还提供一种显示装置，所述显示装置包括上述任一所述的显示面板。\n\n[0026]有益效果：本申请采用钼/铜的叠层、钼钛合金/铜的叠层以及钛钼镍合金/铜的叠层中的至少一种材料制备绑定焊垫，能够有效解决现有技术中MTD与焊接材料结合力较差的问题；同时采用钛钼镍合金/铜/钛钼镍合金叠层制备绑定引线，可以减少显示面板制程，降低制造成本。\n\n附图说明\n\n[0027]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其他有益效果显而易见。\n\n[0028]图1本申请实施例所提供的显示面板的结构示意图；\n\n[0029]图2本申请实施例所提供的显示面板的俯视结构示意图；\n\n[0030]图3本申请实施例所提供的显示面板的制备方法的步骤流程图；\n\n[0031]图4A～图4F为本申请实施例所提供的显示面板的制备过程中的结构示意图。\n\n具体实施方式\n\n[0032]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0033]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0034]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0035]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0036]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0037]现有技术中，通常使用MoTiNi(MTD)合金作为MLED显示技术中的LED bondingPad，该MTD合金具备高稳定性，抗氧化能力强等优势，可以提高制程window。但是，该合金与LED bonding所需锡膏结合力较差，会对bonding效果造成影响。基于此，本申请提供了一种显示面板及其制备方法、显示装置，能够解决上诉缺陷。\n\n[0038]现结合具体实施例对本申请的技术方案进行描述。\n\n[0039]实施例一\n\n[0040]请参阅图1，本申请实施例所提供的显示面板的结构示意图。\n\n[0041]在本实施例中，所述显示面板包括显示区100和围绕所述显示区100的非显示区200，所述显示区100包括多个像素区域101。\n\n[0042]所述显示面板包括基板10；设置在基板10上方第一电极层20；设置在所述第一电极层20上方的第一绝缘层30；设置在所述第一绝缘层30上方的有源层40；设置在所述有源层40上方的第二电极层50；以及设置在所述第二电极层50上方的第二绝缘层60。\n\n[0043]在本实施例中，所述基板10为PI基板，主要为聚醯亚胺，PI材料可以有效的提高透光率。\n\n[0044]在本实施例中，所述第一电极层20包括间隔设置的第一电极21、栅极22以及焊垫23。\n\n[0045]所述第一电极21对应所述非显示区200设置；所述栅极22和焊垫23对应所述显示区100设置。\n\n[0046]进一步的，在本实施例中，所述焊垫23对应所述像素区域101设置。\n\n[0047]所述焊垫23的材料包括但不限于钼/铜的叠层、钼钛合金/铜的叠层以及钛钼镍合金/铜的叠层。\n\n[0048]在本实施例中，所述第一绝缘层30为栅极绝缘层。\n\n[0049]所述第一绝缘层30的材料包括但不限于氧化硅、氮化硅、氮氧化硅等或其层叠。\n\n[0050]在本实施例中，所述有源层40包括沟道区、源极接触区以及漏极接触区，所述源极接触区和所述漏极接触区之间由所述沟道区隔开。\n\n[0051]所述有源层40的材料包括但不限于铟镓锌氧化物、铟锡氧化物、铟锌氧化物、铝锌氧化物等半导体金属氧化物。\n\n[0052]在本实施例中，所述第二电极层50包括间隔设置的第二电极51、源极52以及漏极53。\n\n[0053]其中，所述第二电极51位于所述非显示区200；所述源极52和所述漏极53位于所述显示区100。\n\n[0054]在本实施例中，所述第二电极51与所述有源层40同层且间隔设置。\n\n[0055]在本实施例中，所述显示面板还包括对应所述非显示区200的绑定引线70。\n\n[0056]所述绑定引线70包括所述第一电极21和所述第二电极51。\n\n[0057]所述第一绝缘层30对应所述第一电极21的位置开设有过孔，所述第二电极51通过所述过孔与所述第一电极21电连接。\n\n[0058]在本实施例中，所述源极52和所述漏极53设置于所述有源层40的两端；所述源极52与所述源极接触区相接触；所述漏极53与所述漏极接触区相接触。\n\n[0059]在本实施例中，所述第二电极层50的材料为钛钼镍合金/铜/钛钼镍合金叠层。\n\n[0060]在显示面板制备中部分氧化物需要高温制程，而所述第二电极层50采用钛钼镍合金/铜/钛钼镍合金叠层材料可以提高显示面板制程温度；同时与现有技术相比，所述第二电极52可作为COF bonding衬垫，从而减少电极层的制备步骤，节省制作成本。\n\n[0061]在本实施例中，所述第二绝缘层60为钝化层。\n\n[0062]所述第二绝缘层60的材料包括但不限于氧化硅、氮化硅、氮氧化硅等或其层叠。\n\n[0063]在本实施例中，所述第一绝缘层30和所述第二绝缘层60上开设有将所述焊垫23部分暴露的第一开孔。\n\n[0064]所述第二绝缘层60上还开设有将所述第二电极51部分暴露的第二开孔。\n\n[0065]在本实施例中，在真空环境下用点胶机向所述第一开孔中加入焊接材料；采用转移工艺完成微型发光二极管90上的焊接电极80通过焊接材料与所述焊垫23的绑定。\n\n[0066]其中，所述焊接材料包括但不限于锡膏。\n\n[0067]请结合图2，本申请实施例所提供的显示面板的俯视结构示意图。\n\n[0068]在本实施例中，所述显示面板包括位于所述基板10上且对应所述显示区100设置的信号线1001。\n\n[0069]所述信号线1001由所述显示区100向所述非显示区200延伸并与所述绑定引线70电连接。\n\n[0070]在本实施例中，所述信号线1001与所述焊垫23电连接。\n\n[0071]在本实施例中，所述非显显示区200包括绑定区201，所述绑定引线70设置于所述绑定区201。\n\n[0072]其中，电路板通过所述绑定引线70绑定于所述显示面板上，并且通过所述绑定引线70与所述信号线1001之间进行信号传输。\n\n[0073]需要说明的是，在本实施例中,所述焊垫23与所述信号线1001同层设置，只用于举例说明，本实施例对所述焊垫23与所述信号线1001的位置关系不做限定。\n\n[0074]本实施例采用钼/铜的叠层、钼钛合金/铜的叠层以及钛钼镍合金/铜的叠层中的至少一种材料制备绑定焊垫23，能够有效解决现有技术中MTD与焊接材料结合力较差的问题；同时所述第二电极层50采用钛钼镍合金/铜/钛钼镍合金叠层材料可以提高显示面板制程温度，从而保证显示面板中的氧化物正常制备。\n\n[0075]实施例二\n\n[0076]请参阅图3，本申请实施例所提供的显示面板的制备方法的步骤流程图。\n\n[0077]在本实施例中，所述显示面板包括显示区100和围绕所述显示区100的非显示区200，所述显示区100包括多个像素区域101。\n\n[0078]所述显示面板的制备方法包括：\n\n[0079]步骤S10：提供一基板10，在基板10上形成第一金属层，对所述第一金属层图案化处理，形成第一电极层20，所述第一电极层20包括对应所述非显示区200设置的第一电极21、对应所述显示区100设置的栅极22、以及对应所述像素区域101设置焊垫23，如图4A所示。\n\n[0080]在本实施例中，所述基板10为PI基板，主要为聚醯亚胺，PI材料可以有效的提高透光率。\n\n[0081]在本实施例中，所述第一金属层的材料包括但不限于钼/铜的叠层、钼钛合金/铜的叠层以及钛钼镍合金/铜的叠层。\n\n[0082]步骤S20：在所述第一电极层20上形成栅极绝缘层30和有源层40，所述有源层40包括沟道区、源极接触区以及漏极接触区，所述源极接触区和所述漏极接触区之间由所述沟道区隔开，如图4B所示。\n\n[0083]在本实施例中，所述栅极绝缘层30的材料包括但不限于氧化硅、氮化硅、氮氧化硅等或其层叠。\n\n[0084]在本实施例中，所述有源层40的材料包括但不限于铟镓锌氧化物、铟锡氧化物、铟锌氧化物、铝锌氧化物等半导体金属氧化物。\n\n[0085]步骤S30：对所述栅极绝缘层30图案化处理，形成位于所述第一电极21上方的过孔，如图4C所示。\n\n[0086]步骤S40：在所述有源层40和所述栅极绝缘层30上形成第二金属层，对所述第二金属层图案化处理，形成第二电极层50，所述第二电极层50包括位于所述第一电极21上方的第二电极51、与所述源极接触区相接触的源极52、以及与所述漏极接触区相接触的漏极53；其中，所述第二电极51通过所述过孔与所述第一电极21相接触，如图4D所示。\n\n[0087]在本实施例中，所述第二电极层50的材料为钛钼镍合金/铜/钛钼镍合金叠层。\n\n[0088]在显示面板的制备中，部分氧化物需要高温制程，所述第二电极层50采用钛钼镍合金/铜/钛钼镍合金叠层材料可以提高显示面板制程温度；同时与现有技术相比，所述第二电极52可作为COF bonding衬垫，从而减少电极层的制备步骤，节省制作成本。\n\n[0089]在本实施例中，所述显示面板包括对应所述非显示区200的绑定引线70。\n\n[0090]所述绑定引线70包括所述第一电极21和所述第二电极51。\n\n[0091]步骤S50：在所述第二电极层50上方形成钝化层60，对所述钝化层60和所述栅极绝缘层30图案化处理，形成将所述焊垫23部分暴露的开孔，以及将所述第二电极22部分暴露的开孔，如图4E所示。\n\n[0092]在本实施例中，所述钝化层60的材料包括但不限于氧化硅、氮化硅、氮氧化硅等或其层叠。\n\n[0093]步骤S60：向对应所述焊垫23的开孔内加入焊接材料，将微型发光二极管90的焊接电极80通过所述焊接材料与所述焊垫23电连接，如图4F所示。\n\n[0094]所述焊接材料包括但不限于锡膏。\n\n[0095]在步骤S60中，采用点胶机将所述焊接材料加入所述开孔内；采用转移工艺将微型发光二极管90的焊接电极80通过所述焊接材料与所述焊垫23电连接。\n\n[0096]本实施例采用钼/铜的叠层、钼钛合金/铜的叠层以及钛钼镍合金/铜的叠层中的至少一种材料制备绑定焊垫23，能够有效解决现有技术中MTD与焊接材料结合力较差的问题；同时所述第二电极层50采用钛钼镍合金/铜/钛钼镍合金叠层材料可以提高显示面板制程温度；以及所述第二电极52可作为COF bonding衬垫，从而减少显示面板的制备步骤，降低制造成本。\n\n[0097]实施例三\n\n[0098]本申请还提供一种显示装置，所述显示装置包括实施例一所述的显示面板。\n\n[0099]所述显示面板已经在实施例一中进行了详细的说明，在此不在重复说明。\n\n[0100]本申请提供一种显示面板及其制备方法、显示装置，显示面板包括显示区和围绕所述显示区的非显示区，所述显示区包括多个像素区域；所述显示面板包括基板以及设置在所述基板上的焊垫和信号线，所述焊垫对应所述像素区域设置，且所述焊垫与所述信号线电连接；所述焊垫的材料包括钼/铜的叠层、钼钛合金/铜的叠层以及钛钼镍合金/铜的叠层中的至少一种；其中，微型发光二极管上的焊接电极通过焊接材料与所述焊垫电连接。\n\n[0101]本申请采用钼/铜的叠层材料制备绑定焊垫，能够有效解决现有技术中MTD与焊接材料结合力较差的问题；同时采用钛钼镍合金/铜/钛钼镍合金叠层制备绑定引线，可以减少显示面板制程，降低制造成本。\n\n[0102]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0103]以上对本申请实施例所提供的一种显示面板及其制备方法、显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种显示面板及其制备方法、显示装置。\n\n背景技术\n\n[0002]Mini/MicroLED(MLED)显示技术在近两年进入加速发展阶段，可以使用在中小型高附加价值显示器应用领域。相较OLED屏幕，MLED显示可以在成本、对比度、高亮度和轻薄外形上表现出更佳性能。\n\n[0003]在MLED显示技术中，背板技术作为关键技术，优化背板技术对于MLED显示技术至关重要，而常规的BCE_TFT背板技术采用6mask技术，其中M2使用Mo/Cu金属作为LEDbonding Pad，ITO作为COF bonding保护层，防止Cu氧化；然而，该技术制程温度window较低，PV成膜温度提高易造成Cu电极氧化，影响导电性能；此外，金属氧化物半导体所需热处理温度随材料成分变化，部分氧化物需要高温制程，该技术不能更好的兼容。目前，通常使用MoTiNi(MTD)合金作为M2，该MTD合金具备高稳定性，抗氧化能力强，提高制程window，但是，该合金与LED bonding所需锡膏结合力较差，影响绑定效果。\n\n发明内容\n\n[0004]本申请提供了一种显示面板及其制备方法、显示装置，能够有效解决MTD与焊接材料结合力较差的问题，可以减少显示面板制程，降低制造成本。\n\n[0005]一种显示面板，包括显示区和围绕所述显示区的非显示区，所述显示区包括多个像素区域；\n\n[0006]所述显示面板包括基板以及设置在所述基板上的焊垫和信号线，所述焊垫对应所述像素区域设置，且所述焊垫与所述信号线电连接；\n\n[0007]所述焊垫的材料包括钼/铜的叠层、钼钛合金/铜的叠层以及钛钼镍合金/铜的叠层中的至少一种；\n\n[0008]其中，微型发光二极管上的焊接电极通过焊接材料与所述焊垫电连接。\n\n[0009]本申请的显示面板中，所述显示面板还包括位于所述基板上的第一电极层和第二电极层；所述第一电极层包括间隔设置的第一电极、栅极以及所述焊垫；所述第二电极层包括间隔设置的第二电极、源极以及漏极；其中，所述第一电极和所述第二电极位于所述非显示区。\n\n[0010]本申请的显示面板中，所述显示面板还包括对应所述非显示区的绑定引线，所述信号线由所述显示区向所述非显示区延伸并与所述绑定引线电连接；所述绑定引线包括所述第一电极和所述第二电极；\n\n[0011]其中，电路板通过所述绑定引线绑定于所述显示面板上，并且通过所述绑定引线与所述信号线之间进行信号传输。\n\n[0012]本申请的显示面板中，所述第二电极的材料为钛钼镍合金/铜/钛钼镍合金叠层。\n\n[0013]本申请的显示面板中，所述显示面板还包括位于所述第一电极层和所述第二电极层之间的绝缘层，以及位于所述第二电极层上方的钝化层；所述绝缘层和所述钝化层开设有将所述焊垫部分暴露的第一开孔，所述钝化层开设有将所述第二电极部分暴露的第二开孔；其中，所述第一开孔中容纳有焊接材料。\n\n[0014]本申请还提供一种显示面板的制备方法，包括显示区和围绕所述显示区的非显示区，所述显示区包括多个像素区域；所述制备方法包括：\n\n[0015]步骤S10：在基板上形成第一金属层，对所述第一金属层图案化处理，形成第一电极层，所述第一电极层包括对应所述非显示区设置的第一电极、对应所述显示区设置的栅极、以及对应所述像素区域设置焊垫；\n\n[0016]步骤S20：在所述第一电极层上形成栅极绝缘层和有源层，所述有源层包括沟道区、源极接触区以及漏极接触区，所述源极接触区和所述漏极接触区之间由所述沟道区隔开；\n\n[0017]步骤S30：对所述栅极绝缘层图案化处理，形成位于所述第一电极上方的过孔；\n\n[0018]步骤S40：在所述有源层和所述栅极绝缘层上形成第二金属层，对所述第二金属层图案化处理，形成第二电极层，所述第二电极层包括位于所述第一电极上方的第二电极，与所述源极接触区相接触的源极，以及与所述漏极接触区相接触的漏极；其中，所述第二电极通过所述过孔与所述第一电极相接触；\n\n[0019]步骤S50：在所述第二电极层上方形成钝化层，对所述钝化层图案化处理，形成将所述焊垫部分暴露的开孔，以及将所述第二电极部分暴露的开孔；\n\n[0020]步骤S60：向对应所述焊垫的开孔内加入焊接材料，将微型发光二极管的焊接电极通过所述焊接材料与所述焊垫电连接。\n\n[0021]本申请的制备方法中，所述显示面板还包括对应所述非显示区的绑定引线，所述信号线由所述显示区向所述非显示区延伸并与所述绑定引线电连接；所述绑定引线包括所述第一电极和所述第二电极；\n\n[0022]其中，电路板通过所述绑定引线绑定于所述显示面板上，并且通过所述绑定引线与所述信号线之间进行信号传输。\n\n[0023]本申请的制备方法中，所述第一金属层的材料包括钼/铜的叠层、钼钛合金/铜的叠层以及钛钼镍合金/铜的叠层中的至少一种。\n\n[0024]本申请的制备方法中，所述第二金属层的材料为钛钼镍合金/铜/钛钼镍合金叠层。\n\n[0025]本申请还提供一种显示装置，所述显示装置包括上述任一所述的显示面板。\n\n[0026]有益效果：本申请采用钼/铜的叠层、钼钛合金/铜的叠层以及钛钼镍合金/铜的叠层中的至少一种材料制备绑定焊垫，能够有效解决现有技术中MTD与焊接材料结合力较差的问题；同时采用钛钼镍合金/铜/钛钼镍合金叠层制备绑定引线，可以减少显示面板制程，降低制造成本。\n\n附图说明\n\n[0027]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其他有益效果显而易见。\n\n[0028]图1本申请实施例所提供的显示面板的结构示意图；\n\n[0029]图2本申请实施例所提供的显示面板的俯视结构示意图；\n\n[0030]图3本申请实施例所提供的显示面板的制备方法的步骤流程图；\n\n[0031]图4A～图4F为本申请实施例所提供的显示面板的制备过程中的结构示意图。\n\n具体实施方式\n\n[0032]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0033]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0034]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0035]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0036]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0037]现有技术中，通常使用MoTiNi(MTD)合金作为MLED显示技术中的LED bondingPad，该MTD合金具备高稳定性，抗氧化能力强等优势，可以提高制程window。但是，该合金与LED bonding所需锡膏结合力较差，会对bonding效果造成影响。基于此，本申请提供了一种显示面板及其制备方法、显示装置，能够解决上诉缺陷。\n\n[0038]现结合具体实施例对本申请的技术方案进行描述。\n\n[0039]实施例一\n\n[0040]请参阅图1，本申请实施例所提供的显示面板的结构示意图。\n\n[0041]在本实施例中，所述显示面板包括显示区100和围绕所述显示区100的非显示区200，所述显示区100包括多个像素区域101。\n\n[0042]所述显示面板包括基板10；设置在基板10上方第一电极层20；设置在所述第一电极层20上方的第一绝缘层30；设置在所述第一绝缘层30上方的有源层40；设置在所述有源层40上方的第二电极层50；以及设置在所述第二电极层50上方的第二绝缘层60。\n\n[0043]在本实施例中，所述基板10为PI基板，主要为聚醯亚胺，PI材料可以有效的提高透光率。\n\n[0044]在本实施例中，所述第一电极层20包括间隔设置的第一电极21、栅极22以及焊垫23。\n\n[0045]所述第一电极21对应所述非显示区200设置；所述栅极22和焊垫23对应所述显示区100设置。\n\n[0046]进一步的，在本实施例中，所述焊垫23对应所述像素区域101设置。\n\n[0047]所述焊垫23的材料包括但不限于钼/铜的叠层、钼钛合金/铜的叠层以及钛钼镍合金/铜的叠层。\n\n[0048]在本实施例中，所述第一绝缘层30为栅极绝缘层。\n\n[0049]所述第一绝缘层30的材料包括但不限于氧化硅、氮化硅、氮氧化硅等或其层叠。\n\n[0050]在本实施例中，所述有源层40包括沟道区、源极接触区以及漏极接触区，所述源极接触区和所述漏极接触区之间由所述沟道区隔开。\n\n[0051]所述有源层40的材料包括但不限于铟镓锌氧化物、铟锡氧化物、铟锌氧化物、铝锌氧化物等半导体金属氧化物。\n\n[0052]在本实施例中，所述第二电极层50包括间隔设置的第二电极51、源极52以及漏极53。\n\n[0053]其中，所述第二电极51位于所述非显示区200；所述源极52和所述漏极53位于所述显示区100。\n\n[0054]在本实施例中，所述第二电极51与所述有源层40同层且间隔设置。\n\n[0055]在本实施例中，所述显示面板还包括对应所述非显示区200的绑定引线70。\n\n[0056]所述绑定引线70包括所述第一电极21和所述第二电极51。\n\n[0057]所述第一绝缘层30对应所述第一电极21的位置开设有过孔，所述第二电极51通过所述过孔与所述第一电极21电连接。\n\n[0058]在本实施例中，所述源极52和所述漏极53设置于所述有源层40的两端；所述源极52与所述源极接触区相接触；所述漏极53与所述漏极接触区相接触。\n\n[0059]在本实施例中，所述第二电极层50的材料为钛钼镍合金/铜/钛钼镍合金叠层。\n\n[0060]在显示面板制备中部分氧化物需要高温制程，而所述第二电极层50采用钛钼镍合金/铜/钛钼镍合金叠层材料可以提高显示面板制程温度；同时与现有技术相比，所述第二电极52可作为COF bonding衬垫，从而减少电极层的制备步骤，节省制作成本。\n\n[0061]在本实施例中，所述第二绝缘层60为钝化层。\n\n[0062]所述第二绝缘层60的材料包括但不限于氧化硅、氮化硅、氮氧化硅等或其层叠。\n\n[0063]在本实施例中，所述第一绝缘层30和所述第二绝缘层60上开设有将所述焊垫23部分暴露的第一开孔。\n\n[0064]所述第二绝缘层60上还开设有将所述第二电极51部分暴露的第二开孔。\n\n[0065]在本实施例中，在真空环境下用点胶机向所述第一开孔中加入焊接材料；采用转移工艺完成微型发光二极管90上的焊接电极80通过焊接材料与所述焊垫23的绑定。\n\n[0066]其中，所述焊接材料包括但不限于锡膏。\n\n[0067]请结合图2，本申请实施例所提供的显示面板的俯视结构示意图。\n\n[0068]在本实施例中，所述显示面板包括位于所述基板10上且对应所述显示区100设置的信号线1001。\n\n[0069]所述信号线1001由所述显示区100向所述非显示区200延伸并与所述绑定引线70电连接。\n\n[0070]在本实施例中，所述信号线1001与所述焊垫23电连接。\n\n[0071]在本实施例中，所述非显显示区200包括绑定区201，所述绑定引线70设置于所述绑定区201。\n\n[0072]其中，电路板通过所述绑定引线70绑定于所述显示面板上，并且通过所述绑定引线70与所述信号线1001之间进行信号传输。\n\n[0073]需要说明的是，在本实施例中,所述焊垫23与所述信号线1001同层设置，只用于举例说明，本实施例对所述焊垫23与所述信号线1001的位置关系不做限定。\n\n[0074]本实施例采用钼/铜的叠层、钼钛合金/铜的叠层以及钛钼镍合金/铜的叠层中的至少一种材料制备绑定焊垫23，能够有效解决现有技术中MTD与焊接材料结合力较差的问题；同时所述第二电极层50采用钛钼镍合金/铜/钛钼镍合金叠层材料可以提高显示面板制程温度，从而保证显示面板中的氧化物正常制备。\n\n[0075]实施例二\n\n[0076]请参阅图3，本申请实施例所提供的显示面板的制备方法的步骤流程图。\n\n[0077]在本实施例中，所述显示面板包括显示区100和围绕所述显示区100的非显示区200，所述显示区100包括多个像素区域101。\n\n[0078]所述显示面板的制备方法包括：\n\n[0079]步骤S10：提供一基板10，在基板10上形成第一金属层，对所述第一金属层图案化处理，形成第一电极层20，所述第一电极层20包括对应所述非显示区200设置的第一电极21、对应所述显示区100设置的栅极22、以及对应所述像素区域101设置焊垫23，如图4A所示。\n\n[0080]在本实施例中，所述基板10为PI基板，主要为聚醯亚胺，PI材料可以有效的提高透光率。\n\n[0081]在本实施例中，所述第一金属层的材料包括但不限于钼/铜的叠层、钼钛合金/铜的叠层以及钛钼镍合金/铜的叠层。\n\n[0082]步骤S20：在所述第一电极层20上形成栅极绝缘层30和有源层40，所述有源层40包括沟道区、源极接触区以及漏极接触区，所述源极接触区和所述漏极接触区之间由所述沟道区隔开，如图4B所示。\n\n[0083]在本实施例中，所述栅极绝缘层30的材料包括但不限于氧化硅、氮化硅、氮氧化硅等或其层叠。\n\n[0084]在本实施例中，所述有源层40的材料包括但不限于铟镓锌氧化物、铟锡氧化物、铟锌氧化物、铝锌氧化物等半导体金属氧化物。\n\n[0085]步骤S30：对所述栅极绝缘层30图案化处理，形成位于所述第一电极21上方的过孔，如图4C所示。\n\n[0086]步骤S40：在所述有源层40和所述栅极绝缘层30上形成第二金属层，对所述第二金属层图案化处理，形成第二电极层50，所述第二电极层50包括位于所述第一电极21上方的第二电极51、与所述源极接触区相接触的源极52、以及与所述漏极接触区相接触的漏极53；其中，所述第二电极51通过所述过孔与所述第一电极21相接触，如图4D所示。\n\n[0087]在本实施例中，所述第二电极层50的材料为钛钼镍合金/铜/钛钼镍合金叠层。\n\n[0088]在显示面板的制备中，部分氧化物需要高温制程，所述第二电极层50采用钛钼镍合金/铜/钛钼镍合金叠层材料可以提高显示面板制程温度；同时与现有技术相比，所述第二电极52可作为COF bonding衬垫，从而减少电极层的制备步骤，节省制作成本。\n\n[0089]在本实施例中，所述显示面板包括对应所述非显示区200的绑定引线70。\n\n[0090]所述绑定引线70包括所述第一电极21和所述第二电极51。\n\n[0091]步骤S50：在所述第二电极层50上方形成钝化层60，对所述钝化层60和所述栅极绝缘层30图案化处理，形成将所述焊垫23部分暴露的开孔，以及将所述第二电极22部分暴露的开孔，如图4E所示。\n\n[0092]在本实施例中，所述钝化层60的材料包括但不限于氧化硅、氮化硅、氮氧化硅等或其层叠。\n\n[0093]步骤S60：向对应所述焊垫23的开孔内加入焊接材料，将微型发光二极管90的焊接电极80通过所述焊接材料与所述焊垫23电连接，如图4F所示。\n\n[0094]所述焊接材料包括但不限于锡膏。\n\n[0095]在步骤S60中，采用点胶机将所述焊接材料加入所述开孔内；采用转移工艺将微型发光二极管90的焊接电极80通过所述焊接材料与所述焊垫23电连接。\n\n[0096]本实施例采用钼/铜的叠层、钼钛合金/铜的叠层以及钛钼镍合金/铜的叠层中的至少一种材料制备绑定焊垫23，能够有效解决现有技术中MTD与焊接材料结合力较差的问题；同时所述第二电极层50采用钛钼镍合金/铜/钛钼镍合金叠层材料可以提高显示面板制程温度；以及所述第二电极52可作为COF bonding衬垫，从而减少显示面板的制备步骤，降低制造成本。\n\n[0097]实施例三\n\n[0098]本申请还提供一种显示装置，所述显示装置包括实施例一所述的显示面板。\n\n[0099]所述显示面板已经在实施例一中进行了详细的说明，在此不在重复说明。\n\n[0100]本申请提供一种显示面板及其制备方法、显示装置，显示面板包括显示区和围绕所述显示区的非显示区，所述显示区包括多个像素区域；所述显示面板包括基板以及设置在所述基板上的焊垫和信号线，所述焊垫对应所述像素区域设置，且所述焊垫与所述信号线电连接；所述焊垫的材料包括钼/铜的叠层、钼钛合金/铜的叠层以及钛钼镍合金/铜的叠层中的至少一种；其中，微型发光二极管上的焊接电极通过焊接材料与所述焊垫电连接。\n\n[0101]本申请采用钼/铜的叠层材料制备绑定焊垫，能够有效解决现有技术中MTD与焊接材料结合力较差的问题；同时采用钛钼镍合金/铜/钛钼镍合金叠层制备绑定引线，可以减少显示面板制程，降低制造成本。\n\n[0102]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0103]以上对本申请实施例所提供的一种显示面板及其制备方法、显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10832, 23886, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种显示面板及显示装置。\n\n背景技术\n\n[0002]显示技术的发展使得显示装置向全面屏、多功能方向不断发展，但显示装置的显示屏幕面积越大，显示屏幕消耗的电能越大，消耗的电能转换出的光能并不能全部用于显示，还有一部分光能会损失在显示装置内，造成资源的浪费。\n\n发明内容\n\n[0003]本申请实施例提供一种显示面板及显示装置，可以实现节能的效果，提升显示面板的续航能力。\n\n[0004]本申请实施例提供一种显示面板，包括：\n\n[0005]多个间隔设置的像素单元；\n\n[0006]至少一光传感器，在俯视视角下，每一所述光传感器位于对应的所述像素单元的一侧，所述光传感器用于将接收的光能转换为电能。\n\n[0007]在一些实施例中，所述光传感器具有第一状态和第二状态，当所述光传感器处于第一状态时，所述光传感器用于将接收的所述光能转化为所述电能，当所述光传感器处于第二状态时，所述光传感器用于接收指纹的反射光产生电信号，所述显示面板还包括信号读取电路，所述信号读取电路用于根据所述电信号识别指纹。\n\n[0008]在一些实施例中，所述显示面板还包括阵列基板，每一所述像素单元包括位于所述阵列基板上的多个发光器件，在俯视视角下，所述光传感器位于相邻的两所述发光器件之间。\n\n[0009]在一些实施例中，所述发光器件包括有机发光二极管、次毫米发光二极管及微型发光二极管中的至少一种。\n\n[0010]在一些实施例中，所述显示面板还包括多个间隔设置的彩膜单元，在俯视视角下，所述光传感器位于多个彩膜单元之间。\n\n[0011]在一些实施例中，所述显示面板还包括黑矩阵，在俯视视角下，所述黑矩阵位于多个所述彩膜单元之间，所述光传感器正对所述黑矩阵设置。\n\n[0012]在一些实施例中，所述黑矩阵位于所述彩膜单元之上，或者所述黑矩阵位于多个彩膜单元之间的间隙内，或者所述黑矩阵位于所述彩膜单元之下。\n\n[0013]在一些实施例中，所述光传感器位于所述黑矩阵下方，所述黑矩阵上设置有过孔以暴露出所述光传感器。\n\n[0014]在一些实施例中，所述显示面板还包括阵列基板，所述光传感器位于所述阵列基板对应所述黑矩阵的区域。\n\n[0015]在一些实施例中，所述像素单元为液晶显示单元，所述显示面板还包括彩膜基板，多个间隔设置的所述彩膜单元位于所述彩膜基板上，每一所述像素单元包括对应的所述彩膜单元。\n\n[0016]在一些实施例中，所述显示面板还包括阵列基板，每一所述像素单元包括位于所述阵列基板上的多个发光器件，多个所述彩膜单元与多个所述发光器件相对应。\n\n[0017]在一些实施例中，所述光传感器包括具有光电效应或具有光生伏特效应的器件。\n\n[0018]在一些实施例中，所述光传感器包括光电二极管、光电三极管及光电池中的至少一种。\n\n[0019]在一些实施例中，所述显示面板还包括电能收集电路，与所述至少一光传感器电性连接，用于存储所述电能。\n\n[0020]在一些实施例中，所述电能收集电路还包括：\n\n[0021]充电芯片，所述充电芯片与所述光传感器电性连接；以及，\n\n[0022]储能装置，所述光传感器通过所述充电芯片为所述储能装置充电。\n\n[0023]在一些实施例中，所述电能收集电路还包括位于多个所述光传感器与所述充电芯片之间的升压电路。\n\n[0024]在一些实施例中，所述升压电路至少包括一电容及电感，多个所述光传感器与所述电容并联，所述电感的一端与所述电容连接，所述电感的另一端与所述充电芯片电性连接。\n\n[0025]在一些实施例中，所述信号读取电路还包括：\n\n[0026]读取电路，所述读取电路用于读取所述电信号；\n\n[0027]读取芯片，与多个所述读取电路电性连接，所述读取芯片用于根据多个所述电信号之间的差异识别指纹。\n\n[0028]在一些实施例中，每一所述读取电路还包括：\n\n[0029]存储电容，所述存储电容与所述光传感器并联，所述存储电容的第一极接入偏压信号；\n\n[0030]晶体管，所述晶体管的栅极与扫描信号线连接，所述晶体管的第一极与读取信号线连接，所述晶体管的第二极与所述存储电容的第二极连接。\n\n[0031]本申请还提供一种显示装置，所述显示装置包括所述的显示面板。\n\n[0032]本申请实施例提供的显示面板及显示装置，所述显示面板包括：多个间隔设置的像素单元；至少一光传感器，在俯视视角下，每一所述光传感器位于对应的所述像素单元的一侧，所述光传感器用于将接收的光能转换为电能；以实现节能的效果，提升显示面板的续航能力。\n\n附图说明\n\n[0033]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0034]图1A～图1E为本申请的实施例提供的显示面板的结构示意图；\n\n[0035]图2A～图2C为本申请的实施例提供的显示面板的俯视图；\n\n[0036]图3A～图3I为本申请的实施例提供的显示面板的结构示意图；\n\n[0037]图4为图1D所示显示面板的俯视图；\n\n[0038]图5A～图5C为本申请的实施例提供的电能收集电路的结构示意图；\n\n[0039]图6A～图6B为本申请的实施例提供的信号读取电路的结构示意图。\n\n具体实施方式\n\n[0040]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0041]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0042]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0043]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0044]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0045]具体地，请参阅图1A～图1E，其为本申请的实施例提供的显示面板的结构示意图；如图2A～图2C所示，其为本申请的实施例提供的显示面板的俯视图；如图4所示，其为图1D所示显示面板的俯视图，所述显示面板包括：\n\n[0046]多个间隔设置的像素单元101；\n\n[0047]至少一光传感器102，在俯视视角下，每一所述光传感器102位于对应的所述像素单元101的一侧，所述光传感器101用于将接收的光能转换为电能以实现节能的效果，提升所述显示面板的续航能力。\n\n[0048]具体地，请参阅图2A～图2C，所述每个所述像素单元101还包括多个间隔设置的子像素101a；进一步地，在俯视视角下，所述光传感器102位于相邻的两所述子像素101a之间，以使所述子像素101a发出的光能照射至所述光传感器102表面或外界环境光照射至所述光传感器102表面产生电能，以提升所述显示面板的续航能力。进一步地，所述子像素101a还包括红色子像素、绿色子像素、蓝色子像素等不同颜色的子像素。\n\n[0049]所述光传感器102包括具有光电效应或具有光生伏特效应的器件。具体地，所述光传感器102包括光电二极管、光电三极管及光电池中的至少一种。\n\n[0050]请继续参阅图1A～图1E，所述显示面板还包括阵列基板103，每一所述像素单元101包括位于所述阵列基板103上的多个发光器件1011，在俯视视角下，所述光传感器102位于相邻的两所述发光器件1011之间；所述光传感器102接收从外界照射进所述显示面板的光能和/或所述发光器件1011发射出的部分光能，并转化成电能，以提升所述显示面板的续航能力。\n\n[0051]由于所述光传感器102可以将外界照射进所述显示面板的光能和所述发光器件1011发射出的部分光能转换成电能，所以，可以实现光能在显示面板内的再利用，实现了节能的效果。\n\n[0052]进一步地，由于所述光传感器102可以接收外界照射进所述显示面板的光信号，所以为提高所述显示面板的集成度，所述光传感器102也可被用于实现指纹识别。\n\n[0053]具体地，所述光传感器102具有第一状态和第二状态，当所述光传感器102处于第一状态时，所述光传感器102用于将接收的所述光能转化为所述电能，当所述光传感器102处于第二状态时，所述光传感器102用于接收指纹的反射光产生电信号，所述显示面板还包括信号读取电路，所述信号读取电路用于根据所述电信号识别指纹。即当所述光传感器102处于第二状态时，由于指纹存在脊谷，脊谷之间又存在反射率差异，因此指纹反射至多个所述光传感器102的光也存在差异，致使每个所述光传感器102产生不同的所述电信号，所述信号读取电路读取多个所述电信号，并根据多个所述电信号之间的差异识别指纹。进一步地，所述光传感器102包括透光面和非透光面，为保证指纹识别的精确性，所述透光面面向接收外界环境光的一侧设置。\n\n[0054]所述发光器件1011包括有机发光二极管、次毫米发光二极管及微型发光二极管中的至少一种。\n\n[0055]所述显示面板还包括位于所述发光器件1011远离所述阵列基板103的一侧的封装层104，所述封装层104可使所述发光器件1011免受水氧侵蚀，\n\n[0056]在俯视图视角下，所述光传感器102位于多个所述发光器件1011之间；而在垂直于所述阵列基板103的方向上，所述光传感器102可位于多个所述发光器件1011之间的间隙内，如图1A所示；进一步地，所述光传感器102的具体位置也可根据所述显示面板的结构进行调整，如图1B～图1E所示。\n\n[0057]请继续参阅图1B～图1D，所述显示面板包括位于所述封装层104远离所述发光器件1011一侧的彩膜层105，所述彩膜层105包括多个间隔设置的彩膜单元1051，多个所述发光器件1011与多个所述彩膜单元1051相对应，在俯视视角下，所述光传感器102位于多个所述彩膜单元1051之间。\n\n[0058]具体地，在垂直于所述阵列基板103的方向上，所述光传感器102位于多个所述彩膜单元1051之间的间隙内，由此所述光传感器102可以将所述发光器件1011的光能转换为电能，还可以将外界的环境光转化为电能，或接收指纹的反射光产生所述电信号，并防止所述发光器件101的光泄露，在实现节能或指纹识别的同时，保证显示面板具有较好的对比度，如图1B所示。\n\n[0059]此外，所述彩膜层105还包括位于多个所述彩膜单元1051之间的黑矩阵1052，在垂直于所述阵列基板103的方向上，所述光传感器102正对所述黑矩阵1052设置，以降低所述光传感器102对所述显示面板开口率的影响，且由于所述光传感器102在吸收光能转化为电能时，并不能将全部光能吸收，会存在光能的泄露，而设置所述黑矩阵1052可以防止光能进一步泄露，有利于提高所述显示面板的对比度。\n\n[0060]所述光传感器102可位于所述彩膜层105靠近所述发光器件1011的一侧，如图1C所示；所述光传感器102也可位于所述彩膜层105远离所述发光器件1011的一侧。在所述光传感器102位于所述彩膜层105靠近所述发光器件1011的一侧时，若所述黑矩阵1052完全覆盖所述光传感器102，如图1C所示，则所述光传感器102与外界交换信号的通道就会被阻断，不利于实现指纹识别，所述光传感器102只接收所述发光器件1011发出的光能，并将其转换为电能。\n\n[0061]进一步地，所述光传感器102位于所述黑矩阵1052上方；或所述光传感器102位于所述黑矩阵1052下方，所述黑矩阵1052上还设置有过孔，以暴露出所述光传感器102，如图1D所示；从而增加所述光传感器102对外界光的光能转换，或利于所述光传感器102接收指纹的反射光，以便于所述显示面板实现指纹识别，如图1D所示的显示面板的俯视图如图4所示。\n\n[0062]多个所述发光器件1011发出的光可以为单色光，对应的所述彩膜层105包括不同颜色的所述彩膜单元1051，以实现所述显示面板的全彩显示；进一步地，所述发光器件1011发出的光为白色光；所述彩膜单元1051包括红色彩膜单元、绿色彩膜单元和蓝色彩膜单元等。\n\n[0063]多个所述发光器件1011发出的光可以为多色光，所述彩膜层105的所述彩膜单元1051与对应设置的所述发光器件1011发出的光的颜色相同；即若所述发光器件1011包括红光发光器件、绿光发光器件、蓝光发光器件等，则所述彩膜单元1051包括红色彩膜单元、绿色彩膜单元和蓝色彩膜单元等，且所述红色彩膜单元与所述红光发光器件对应设置；相应的，所述绿色彩膜单元与所述绿光发光器件对应设置，所述蓝色彩膜单元与所述蓝光发光器件对应设置。\n\n[0064]采用所述彩膜层105的所述显示面板可以省略设置圆偏光片，降低环境光的反射，且所述彩膜层105具有较好的挠性，有利于所述显示面板实现可折叠设置。\n\n[0065]请继续参阅图1E，所述显示面板在包括所述发光器件1011、所述基板103、所述封装层104及所述光传感器102的基础上，还包括位于所述发光器件1011远离所述阵列基板103一侧的色转换膜106，所述色转换膜106包括多个与所述发光器件1011对应设置的色转换单元1061，在俯视视角下，所述光传感器102位于多个所述色转换单元1061之间。在垂直于所述阵列基板103的方向上，所述光传感器102可位于多个所述发光器件1011之间的间隙内或多个所述色转换单元1061之间的间隙内；也可位于所述发光器件1011与所述色转换膜106之间，如图1E所示；还可位于所述色转换膜106远离所述发光器件1011的一侧。\n\n[0066]所述色转换单元1061包括第一色转换单元和第二色转换单元；其中，所述第一色转换单元用于将所述发光器件1011发出的第一波长的光转换为具有第二波长的光，所述第二色转换单元用于透射所述发光器件1011的光。\n\n[0067]具体地，若所述发光器件1011为蓝光发光器件，所述色转换膜106上的各所述第一色转换单元吸收所述发光器件1011发出的蓝光，转化为红光、黄光、绿光等颜色的光，所述第二色转换单元透射所述发光器件1011所发出的蓝光。所述色转换单元1061的制备材料包括荧光材料、量子点材料或钙钛矿材料。\n\n[0068]请继续参阅图1A～图1E，所述阵列基板103还包括衬底以及位于所述衬底上的薄膜晶体管等未示出部分，在俯视视角下，所述光传感器102可以覆盖所述薄膜晶体管设置，也可不覆盖所述薄膜晶体管，本领域的相关技术人员可根据实际需求进行设置。\n\n[0069]请继续参阅图3A～图3I，其为本申请的实施例提供的显示面板的结构示意图。图3A～图3I所示的显示面板与图1A～图1E所示的显示面板区别在于：图3A～图3I所示的显示面板所述像素单元101为液晶显示单元；即所述显示面板还包括彩膜基板301；与所述彩膜基板301相对设置并位于所述彩膜基板下方的阵列基板303；位于所述彩膜基板301与所述阵列基板303之间的液晶层304；以及，位于所述阵列基板303远离所述彩膜基板301一侧的背光模组302；所述光传感器102位于所述彩膜基板301侧，和/或所述阵列基板303侧。\n\n[0070]具体地，所述彩膜基板301包括多个间隔设置的彩膜单元3011，每一所述像素单元包括对应的所述彩膜单元3011，在俯视视角下，所述光传感器102位于多个所述彩膜单元3011之间。而在垂直于所述彩膜基板301的方向上，所述光传感器102可位于多个所述彩膜单元3011之间的间隙内，如图3A所示，以使所述光传感器102在将光能转换为电能的同时，防止所述背光模组302发出的光出现泄露，保证所述显示面板具有较好的对比度。\n\n[0071]进一步地，由于所述光传感器102可以接收外界照射进所述显示面板的光信号，所以所述光传感器102也被用于实现指纹识别。具体地，所述光传感器102具有第一状态和第二状态，当所述光传感器102处于第一状态时，所述光传感器102用于将接收的所述光能转化为所述电能，当所述光传感器102处于第二状态时，所述光传感器102用于接收指纹的反射光产生所述电信号，所述信号读取电路读取所述电信号，从而实现指纹识别。\n\n[0072]请继续参阅图3B～图3I，所述显示面板还包括黑矩阵3012，在俯视视角下，所述黑矩阵3012位于多个所述彩膜单元3011之间，所述光传感器102正对所述黑矩阵3012设置，以提高所述显示面板的对比度。\n\n[0073]具体地，所述光传感器102可位于所述黑矩阵3012靠近所述阵列基板303的一侧，所述光传感器102也可位于所述黑矩阵3012远离所述阵列基板303的一侧。在所述光传感器102位于所述黑矩阵3012靠近所述阵列基板303的一侧时，若所述黑矩阵1052完全覆盖所述光传感器102，如图3B、图3D～图3E所示，则所述光传感器102与外界交换信号的通道就会被阻断，不利于实现指纹识别，所述光传感器102只接收所述背光模组302发出的光能，并将其转换为电能。\n\n[0074]为在所述光传感器102实现光能转化电能的同时，实现指纹识别，所述光传感器102可位于所述黑矩阵3012远离所述阵列基板103的一侧，即所述光传感器102位于所述黑矩阵1052上方，如图3C所示，以便接收指纹的反射光，实现指纹识别。进一步地，所述光传感器102也可位于所述黑矩阵3012下方，所述黑矩阵3012上设置有过孔以暴露出所述光传感器102，使得所述光传感器102可以接收来自外部的环境光或指纹的反射光，以实现光能与电能的转换，或实现指纹的识别，如图3F～图3H所示。\n\n[0075]所述黑矩阵3012可位于所述彩膜单元3011之上，如图3D和图3F所示；所述黑矩阵3012也可位于多个所述彩膜单元3011之间的间隙内，如图3B～图3C和图3G～图3I；或所述黑矩阵3012位于所述彩膜单元3011之下，如图3E所示。\n\n[0076]此外，所述光传感器102也可位于阵列基板303侧，以便于后续实现对所述光传感器102所转换出的所述电能的收集的设计，在一定程度上降低制程难度，降低生产成本。即在如图3I所示的所述显示面板中，所述光传感器102位于所述阵列基板103对应所述黑矩阵3012的区域。\n\n[0077]此外，多个所述光传感器102可设置为不同层，如图3H所示，即所述光传感器102位于所述彩膜基板301侧和所述阵列基板303侧。\n\n[0078]请继续参阅图3A～图3I，所述阵列基板303还包括衬底；位于所述衬底上的薄膜晶体管、像素电极及第一配向层等未示出部分，所述彩膜基板301还包括公共电极、第二配向层等未示出部分。\n\n[0079]在图3A～图3I所示的显示面板中，所述彩膜单元3011均位于所述彩膜基板301侧；本领域的相关技术人员也可将所述彩膜单元3011设置于所述阵列基板303侧，当所述彩膜单元3011设置于所述阵列基板303侧时，在俯视视角下，所述光传感器102位于多个所述彩膜单元3011之间，而在垂直于所述阵列基板303的方向上，所述光传感器102可位于多个所述彩膜单元3011之间的间隙内，也可根据所述显示面板的结构进行调整，在此对其不再进行赘述。\n\n[0080]请参阅图5A～图5C，其为本申请的实施例提供的电能收集电路的结构示意图，所述显示面板还包括电能收集电路，与所述至少一光传感器102电性连接，用于存储所述电能，以便于所述显示面板随时取用所述电能。\n\n[0081]具体地，所述电能收集电路还包括：\n\n[0082]充电芯片501，所述充电芯片501与所述光传感器102电性连接；以及，\n\n[0083]储能装置502，所述光传感器102通过所述充电芯片501为所述储能装置502充电。\n\n[0084]具体地，当所述光传感器102处于第一状态时，所述光传感器102将接收的光能转换为电能，并利用所述电能收集电路中的所述充电芯片501收集所述光传感器102转换的电能，收集的所述电能被所述储能装置502存储，以便所述电能可以被所述显示面板应用，从而提高所述显示面板的续航能力。\n\n[0085]所述充电芯片102可通过覆晶薄膜等形式实现与所述光传感器102的电性连接。若所述显示面板本身已设置充电芯片，则可以继续沿用原有的充电芯片以收集所述光传感器102转换的电能；进一步地，为避免共用一颗充电芯片影响显示面板的正常工作，也可再增设一充电芯片，增设的所述充电芯片用于收集所述光传感器102转换的电能。\n\n[0086]所述充电芯片501工作时所需的电能需小于所述光传感器102所述产生的电能，以避免所述充电芯片501的功耗较大，致使所述光传感器102所产生的电能未被所述显示面板应用，而只被所述充电芯片501取用，反而增大了所述显示面板的功耗。在实际生产时，所述充电芯片501的选型需结合实际的所述显示面板的类型、参数等进行确定，在此不再对其进行赘述。\n\n[0087]所述储能装置502包括蓄电池，所述储能装置502可以与所述显示面板的原有储能装置共用，以降低所述显示面板的成本。\n\n[0088]请继续参阅图5B～图5C，所述电能收集电路还包括位于多个所述光传感器102与所述充电芯片501之间的升压电路503，以使所述光传感器102转换得到的所述电能先升压至相同的电压等级，再利用所述充电芯片501对所述储能装置502进行充电，以避免多个所述光传感器102之间转换得到的所述电能的电压等级或电流值等参数具有差异，对所述充电芯片501和所述储能装置502造成的伤害。\n\n[0089]进一步地，所述升压电路503至少包括一电容C及电感L，多个所述光传感器102与所述电容C并联，所述电感L的一端与所述电容C连接，所述电感L的另一端与所述充电芯片501电性连接。\n\n[0090]具体地，以所述光传感器102为光电二极管为例，每个所述光传感器102均具有阳极和阴极，多个所述光传感器102的阳极与所述电容C的一端连接，多个所述光传感器102的阴极与所述电容C的另一端连接且接地，所述电感L的一端与所述电容C连接所述光传感器102阳极的一端连接，所述电感L的另一端与所述充电芯片电性连接，如图5C所示。\n\n[0091]请参阅图6A～图6B，其为本申请的实施例提供的信号读取电路的结构示意图，所述信号读取电路还包括：\n\n[0092]读取电路601，所述读取电路601用于读取所述电信号；\n\n[0093]读取芯片602，与多个所述读取电路601电性连接，所述读取芯片602用于根据多个所述电信号之间的差异识别指纹。\n\n[0094]具体地，当所述光传感器102处于第二状态时，每一所述光传感器102根据指纹脊谷之间反射光的差异产生不同的所述电信号，所述读取电路601读取所述电信号，并将所述电信号反馈至所述读取芯片602中，所述读取芯片602对多个所述电信号进行判断，并根据所述电信号之间的差异实现指纹脊谷的识别，从而实现指纹的识别。其中，所述光传感器102根据指纹脊谷之间反射光的差异产生的多个所述电信号为电流。\n\n[0095]请继续参阅图6B，每一所述读取电路601还包括：\n\n[0096]存储电容Cst，所述存储电容Cst与所述光传感器102并联，所述存储电容Cst的第一极接入偏压信号Vb；\n\n[0097]晶体管T，所述晶体管T的栅极与扫描信号线Scan(n)连接，所述晶体管T的第一极与读取信号线Read连接，所述晶体管T的第二极与所述存储电容Cst的第二极连接。\n\n[0098]具体地，以所述光传感器102为光电二极管为例，每个所述光传感器102均具有阳极和阴极，所述阳极与所述存储电容Cst的第一极连接，所述阴极与所述存储电容Cst的所述第二极连接，如图6B所示。\n\n[0099]所述显示面板具有多个所述读取电路601，多个所述读取电路601阵列式分布，每个所述读取电路601对应包括一所述光传感器102，以使每个所述光传感器102均产生所述电信号。在所述光传感器102用于指纹识别时，每个所述光传感器102接收指纹脊谷之间的反射光不同，会产生多个不同的所述电信号，每个所述电信号存储在对应的所述读取电路601的所述存储电容Cst中，在所述读取电路601的所述扫描信号线Scan(n)载入的扫描信号有效时，所述晶体管T导通，所述存储电容Cst通过所述读取信号线Read释放存储的电信号至所述读取芯片602，所述读取芯片602对同一时间内接收到的多个所述电信号进行判断，并根据多个所述电信号之间的差异识别指纹。\n\n[0100]其中，所述晶体管T为场效应晶体管；进一步地，所述晶体管T为薄膜晶体管，所述晶体管T的第一极为源极或漏极的其中之一，所述晶体管T的第二极为源极或漏极的另一。\n\n[0101]所述显示面板可通过时序控制方式实现所述光传感器102第一状态与第二状态之间的切换，使所述电能收集电路或所述信号读取电路分时工作，以使所述光传感器102工作于光能转化为电能的工作状态或使所述光传感器102工作于指纹识别的工作状态。此外，还可通过转换电路的方式实现所述光传感器102第一状态与第二状态之间的切换；进一步地，所述转换电路为可控开关，所述可控开关根据给定的信号接通所述电能收集电路或所述信号读取电路，以使所述光传感器102工作于光能转化为电能的工作状态或使所述光传感器102工作于指纹识别的工作状态。其中，所述给定的信号可由所述显示面板的控制芯片给出，也可根据实际需求进行设定，在此不再对其进行赘述。\n\n[0102]在图6B所示的所述信号读取电路中，仅以所述晶体管T为N型晶体管的形式予以说明，本领域的相关技术人员也可采用P型晶体管实现所述信号读取电路，在此对其不再进行赘述。\n\n[0103]本申请还提供一种显示装置，所述显示装置包括所述的显示面板。具体地，所述显示面板包括可移动终端设备及非移动终端设备；进一步地，所述可移动终端设备包括手机、手表、笔记本电脑、带显示屏的手环等设备；所述非移动终端包括电视、台式电脑等设备。\n\n[0104]所述显示装置还可包括触控面板，所述触控面板可以以外挂式或内置式形式与所述显示面板结合。\n\n[0105]本申请实施例提供的显示面板及显示装置，所述显示面板包括：多个间隔设置的像素单元101；至少一光传感器102，在俯视视角下，每一所述光传感器102位于对应的所述像素单元101的一侧，所述光传感器102用于将接收的光能转换为电能，以实现节能的效果，提升显示面板的续航能力。\n\n[0106]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0107]以上对本申请实施例所提供的显示面板及显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种显示面板及显示装置。\n\n背景技术\n\n[0002]显示技术的发展使得显示装置向全面屏、多功能方向不断发展，但显示装置的显示屏幕面积越大，显示屏幕消耗的电能越大，消耗的电能转换出的光能并不能全部用于显示，还有一部分光能会损失在显示装置内，造成资源的浪费。\n\n发明内容\n\n[0003]本申请实施例提供一种显示面板及显示装置，可以实现节能的效果，提升显示面板的续航能力。\n\n[0004]本申请实施例提供一种显示面板，包括：\n\n[0005]多个间隔设置的像素单元；\n\n[0006]至少一光传感器，在俯视视角下，每一所述光传感器位于对应的所述像素单元的一侧，所述光传感器用于将接收的光能转换为电能。\n\n[0007]在一些实施例中，所述光传感器具有第一状态和第二状态，当所述光传感器处于第一状态时，所述光传感器用于将接收的所述光能转化为所述电能，当所述光传感器处于第二状态时，所述光传感器用于接收指纹的反射光产生电信号，所述显示面板还包括信号读取电路，所述信号读取电路用于根据所述电信号识别指纹。\n\n[0008]在一些实施例中，所述显示面板还包括阵列基板，每一所述像素单元包括位于所述阵列基板上的多个发光器件，在俯视视角下，所述光传感器位于相邻的两所述发光器件之间。\n\n[0009]在一些实施例中，所述发光器件包括有机发光二极管、次毫米发光二极管及微型发光二极管中的至少一种。\n\n[0010]在一些实施例中，所述显示面板还包括多个间隔设置的彩膜单元，在俯视视角下，所述光传感器位于多个彩膜单元之间。\n\n[0011]在一些实施例中，所述显示面板还包括黑矩阵，在俯视视角下，所述黑矩阵位于多个所述彩膜单元之间，所述光传感器正对所述黑矩阵设置。\n\n[0012]在一些实施例中，所述黑矩阵位于所述彩膜单元之上，或者所述黑矩阵位于多个彩膜单元之间的间隙内，或者所述黑矩阵位于所述彩膜单元之下。\n\n[0013]在一些实施例中，所述光传感器位于所述黑矩阵下方，所述黑矩阵上设置有过孔以暴露出所述光传感器。\n\n[0014]在一些实施例中，所述显示面板还包括阵列基板，所述光传感器位于所述阵列基板对应所述黑矩阵的区域。\n\n[0015]在一些实施例中，所述像素单元为液晶显示单元，所述显示面板还包括彩膜基板，多个间隔设置的所述彩膜单元位于所述彩膜基板上，每一所述像素单元包括对应的所述彩膜单元。\n\n[0016]在一些实施例中，所述显示面板还包括阵列基板，每一所述像素单元包括位于所述阵列基板上的多个发光器件，多个所述彩膜单元与多个所述发光器件相对应。\n\n[0017]在一些实施例中，所述光传感器包括具有光电效应或具有光生伏特效应的器件。\n\n[0018]在一些实施例中，所述光传感器包括光电二极管、光电三极管及光电池中的至少一种。\n\n[0019]在一些实施例中，所述显示面板还包括电能收集电路，与所述至少一光传感器电性连接，用于存储所述电能。\n\n[0020]在一些实施例中，所述电能收集电路还包括：\n\n[0021]充电芯片，所述充电芯片与所述光传感器电性连接；以及，\n\n[0022]储能装置，所述光传感器通过所述充电芯片为所述储能装置充电。\n\n[0023]在一些实施例中，所述电能收集电路还包括位于多个所述光传感器与所述充电芯片之间的升压电路。\n\n[0024]在一些实施例中，所述升压电路至少包括一电容及电感，多个所述光传感器与所述电容并联，所述电感的一端与所述电容连接，所述电感的另一端与所述充电芯片电性连接。\n\n[0025]在一些实施例中，所述信号读取电路还包括：\n\n[0026]读取电路，所述读取电路用于读取所述电信号；\n\n[0027]读取芯片，与多个所述读取电路电性连接，所述读取芯片用于根据多个所述电信号之间的差异识别指纹。\n\n[0028]在一些实施例中，每一所述读取电路还包括：\n\n[0029]存储电容，所述存储电容与所述光传感器并联，所述存储电容的第一极接入偏压信号；\n\n[0030]晶体管，所述晶体管的栅极与扫描信号线连接，所述晶体管的第一极与读取信号线连接，所述晶体管的第二极与所述存储电容的第二极连接。\n\n[0031]本申请还提供一种显示装置，所述显示装置包括所述的显示面板。\n\n[0032]本申请实施例提供的显示面板及显示装置，所述显示面板包括：多个间隔设置的像素单元；至少一光传感器，在俯视视角下，每一所述光传感器位于对应的所述像素单元的一侧，所述光传感器用于将接收的光能转换为电能；以实现节能的效果，提升显示面板的续航能力。\n\n附图说明\n\n[0033]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0034]图1A～图1E为本申请的实施例提供的显示面板的结构示意图；\n\n[0035]图2A～图2C为本申请的实施例提供的显示面板的俯视图；\n\n[0036]图3A～图3I为本申请的实施例提供的显示面板的结构示意图；\n\n[0037]图4为图1D所示显示面板的俯视图；\n\n[0038]图5A～图5C为本申请的实施例提供的电能收集电路的结构示意图；\n\n[0039]图6A～图6B为本申请的实施例提供的信号读取电路的结构示意图。\n\n具体实施方式\n\n[0040]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0041]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0042]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0043]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0044]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0045]具体地，请参阅图1A～图1E，其为本申请的实施例提供的显示面板的结构示意图；如图2A～图2C所示，其为本申请的实施例提供的显示面板的俯视图；如图4所示，其为图1D所示显示面板的俯视图，所述显示面板包括：\n\n[0046]多个间隔设置的像素单元101；\n\n[0047]至少一光传感器102，在俯视视角下，每一所述光传感器102位于对应的所述像素单元101的一侧，所述光传感器101用于将接收的光能转换为电能以实现节能的效果，提升所述显示面板的续航能力。\n\n[0048]具体地，请参阅图2A～图2C，所述每个所述像素单元101还包括多个间隔设置的子像素101a；进一步地，在俯视视角下，所述光传感器102位于相邻的两所述子像素101a之间，以使所述子像素101a发出的光能照射至所述光传感器102表面或外界环境光照射至所述光传感器102表面产生电能，以提升所述显示面板的续航能力。进一步地，所述子像素101a还包括红色子像素、绿色子像素、蓝色子像素等不同颜色的子像素。\n\n[0049]所述光传感器102包括具有光电效应或具有光生伏特效应的器件。具体地，所述光传感器102包括光电二极管、光电三极管及光电池中的至少一种。\n\n[0050]请继续参阅图1A～图1E，所述显示面板还包括阵列基板103，每一所述像素单元101包括位于所述阵列基板103上的多个发光器件1011，在俯视视角下，所述光传感器102位于相邻的两所述发光器件1011之间；所述光传感器102接收从外界照射进所述显示面板的光能和/或所述发光器件1011发射出的部分光能，并转化成电能，以提升所述显示面板的续航能力。\n\n[0051]由于所述光传感器102可以将外界照射进所述显示面板的光能和所述发光器件1011发射出的部分光能转换成电能，所以，可以实现光能在显示面板内的再利用，实现了节能的效果。\n\n[0052]进一步地，由于所述光传感器102可以接收外界照射进所述显示面板的光信号，所以为提高所述显示面板的集成度，所述光传感器102也可被用于实现指纹识别。\n\n[0053]具体地，所述光传感器102具有第一状态和第二状态，当所述光传感器102处于第一状态时，所述光传感器102用于将接收的所述光能转化为所述电能，当所述光传感器102处于第二状态时，所述光传感器102用于接收指纹的反射光产生电信号，所述显示面板还包括信号读取电路，所述信号读取电路用于根据所述电信号识别指纹。即当所述光传感器102处于第二状态时，由于指纹存在脊谷，脊谷之间又存在反射率差异，因此指纹反射至多个所述光传感器102的光也存在差异，致使每个所述光传感器102产生不同的所述电信号，所述信号读取电路读取多个所述电信号，并根据多个所述电信号之间的差异识别指纹。进一步地，所述光传感器102包括透光面和非透光面，为保证指纹识别的精确性，所述透光面面向接收外界环境光的一侧设置。\n\n[0054]所述发光器件1011包括有机发光二极管、次毫米发光二极管及微型发光二极管中的至少一种。\n\n[0055]所述显示面板还包括位于所述发光器件1011远离所述阵列基板103的一侧的封装层104，所述封装层104可使所述发光器件1011免受水氧侵蚀，\n\n[0056]在俯视图视角下，所述光传感器102位于多个所述发光器件1011之间；而在垂直于所述阵列基板103的方向上，所述光传感器102可位于多个所述发光器件1011之间的间隙内，如图1A所示；进一步地，所述光传感器102的具体位置也可根据所述显示面板的结构进行调整，如图1B～图1E所示。\n\n[0057]请继续参阅图1B～图1D，所述显示面板包括位于所述封装层104远离所述发光器件1011一侧的彩膜层105，所述彩膜层105包括多个间隔设置的彩膜单元1051，多个所述发光器件1011与多个所述彩膜单元1051相对应，在俯视视角下，所述光传感器102位于多个所述彩膜单元1051之间。\n\n[0058]具体地，在垂直于所述阵列基板103的方向上，所述光传感器102位于多个所述彩膜单元1051之间的间隙内，由此所述光传感器102可以将所述发光器件1011的光能转换为电能，还可以将外界的环境光转化为电能，或接收指纹的反射光产生所述电信号，并防止所述发光器件101的光泄露，在实现节能或指纹识别的同时，保证显示面板具有较好的对比度，如图1B所示。\n\n[0059]此外，所述彩膜层105还包括位于多个所述彩膜单元1051之间的黑矩阵1052，在垂直于所述阵列基板103的方向上，所述光传感器102正对所述黑矩阵1052设置，以降低所述光传感器102对所述显示面板开口率的影响，且由于所述光传感器102在吸收光能转化为电能时，并不能将全部光能吸收，会存在光能的泄露，而设置所述黑矩阵1052可以防止光能进一步泄露，有利于提高所述显示面板的对比度。\n\n[0060]所述光传感器102可位于所述彩膜层105靠近所述发光器件1011的一侧，如图1C所示；所述光传感器102也可位于所述彩膜层105远离所述发光器件1011的一侧。在所述光传感器102位于所述彩膜层105靠近所述发光器件1011的一侧时，若所述黑矩阵1052完全覆盖所述光传感器102，如图1C所示，则所述光传感器102与外界交换信号的通道就会被阻断，不利于实现指纹识别，所述光传感器102只接收所述发光器件1011发出的光能，并将其转换为电能。\n\n[0061]进一步地，所述光传感器102位于所述黑矩阵1052上方；或所述光传感器102位于所述黑矩阵1052下方，所述黑矩阵1052上还设置有过孔，以暴露出所述光传感器102，如图1D所示；从而增加所述光传感器102对外界光的光能转换，或利于所述光传感器102接收指纹的反射光，以便于所述显示面板实现指纹识别，如图1D所示的显示面板的俯视图如图4所示。\n\n[0062]多个所述发光器件1011发出的光可以为单色光，对应的所述彩膜层105包括不同颜色的所述彩膜单元1051，以实现所述显示面板的全彩显示；进一步地，所述发光器件1011发出的光为白色光；所述彩膜单元1051包括红色彩膜单元、绿色彩膜单元和蓝色彩膜单元等。\n\n[0063]多个所述发光器件1011发出的光可以为多色光，所述彩膜层105的所述彩膜单元1051与对应设置的所述发光器件1011发出的光的颜色相同；即若所述发光器件1011包括红光发光器件、绿光发光器件、蓝光发光器件等，则所述彩膜单元1051包括红色彩膜单元、绿色彩膜单元和蓝色彩膜单元等，且所述红色彩膜单元与所述红光发光器件对应设置；相应的，所述绿色彩膜单元与所述绿光发光器件对应设置，所述蓝色彩膜单元与所述蓝光发光器件对应设置。\n\n[0064]采用所述彩膜层105的所述显示面板可以省略设置圆偏光片，降低环境光的反射，且所述彩膜层105具有较好的挠性，有利于所述显示面板实现可折叠设置。\n\n[0065]请继续参阅图1E，所述显示面板在包括所述发光器件1011、所述基板103、所述封装层104及所述光传感器102的基础上，还包括位于所述发光器件1011远离所述阵列基板103一侧的色转换膜106，所述色转换膜106包括多个与所述发光器件1011对应设置的色转换单元1061，在俯视视角下，所述光传感器102位于多个所述色转换单元1061之间。在垂直于所述阵列基板103的方向上，所述光传感器102可位于多个所述发光器件1011之间的间隙内或多个所述色转换单元1061之间的间隙内；也可位于所述发光器件1011与所述色转换膜106之间，如图1E所示；还可位于所述色转换膜106远离所述发光器件1011的一侧。\n\n[0066]所述色转换单元1061包括第一色转换单元和第二色转换单元；其中，所述第一色转换单元用于将所述发光器件1011发出的第一波长的光转换为具有第二波长的光，所述第二色转换单元用于透射所述发光器件1011的光。\n\n[0067]具体地，若所述发光器件1011为蓝光发光器件，所述色转换膜106上的各所述第一色转换单元吸收所述发光器件1011发出的蓝光，转化为红光、黄光、绿光等颜色的光，所述第二色转换单元透射所述发光器件1011所发出的蓝光。所述色转换单元1061的制备材料包括荧光材料、量子点材料或钙钛矿材料。\n\n[0068]请继续参阅图1A～图1E，所述阵列基板103还包括衬底以及位于所述衬底上的薄膜晶体管等未示出部分，在俯视视角下，所述光传感器102可以覆盖所述薄膜晶体管设置，也可不覆盖所述薄膜晶体管，本领域的相关技术人员可根据实际需求进行设置。\n\n[0069]请继续参阅图3A～图3I，其为本申请的实施例提供的显示面板的结构示意图。图3A～图3I所示的显示面板与图1A～图1E所示的显示面板区别在于：图3A～图3I所示的显示面板所述像素单元101为液晶显示单元；即所述显示面板还包括彩膜基板301；与所述彩膜基板301相对设置并位于所述彩膜基板下方的阵列基板303；位于所述彩膜基板301与所述阵列基板303之间的液晶层304；以及，位于所述阵列基板303远离所述彩膜基板301一侧的背光模组302；所述光传感器102位于所述彩膜基板301侧，和/或所述阵列基板303侧。\n\n[0070]具体地，所述彩膜基板301包括多个间隔设置的彩膜单元3011，每一所述像素单元包括对应的所述彩膜单元3011，在俯视视角下，所述光传感器102位于多个所述彩膜单元3011之间。而在垂直于所述彩膜基板301的方向上，所述光传感器102可位于多个所述彩膜单元3011之间的间隙内，如图3A所示，以使所述光传感器102在将光能转换为电能的同时，防止所述背光模组302发出的光出现泄露，保证所述显示面板具有较好的对比度。\n\n[0071]进一步地，由于所述光传感器102可以接收外界照射进所述显示面板的光信号，所以所述光传感器102也被用于实现指纹识别。具体地，所述光传感器102具有第一状态和第二状态，当所述光传感器102处于第一状态时，所述光传感器102用于将接收的所述光能转化为所述电能，当所述光传感器102处于第二状态时，所述光传感器102用于接收指纹的反射光产生所述电信号，所述信号读取电路读取所述电信号，从而实现指纹识别。\n\n[0072]请继续参阅图3B～图3I，所述显示面板还包括黑矩阵3012，在俯视视角下，所述黑矩阵3012位于多个所述彩膜单元3011之间，所述光传感器102正对所述黑矩阵3012设置，以提高所述显示面板的对比度。\n\n[0073]具体地，所述光传感器102可位于所述黑矩阵3012靠近所述阵列基板303的一侧，所述光传感器102也可位于所述黑矩阵3012远离所述阵列基板303的一侧。在所述光传感器102位于所述黑矩阵3012靠近所述阵列基板303的一侧时，若所述黑矩阵1052完全覆盖所述光传感器102，如图3B、图3D～图3E所示，则所述光传感器102与外界交换信号的通道就会被阻断，不利于实现指纹识别，所述光传感器102只接收所述背光模组302发出的光能，并将其转换为电能。\n\n[0074]为在所述光传感器102实现光能转化电能的同时，实现指纹识别，所述光传感器102可位于所述黑矩阵3012远离所述阵列基板103的一侧，即所述光传感器102位于所述黑矩阵1052上方，如图3C所示，以便接收指纹的反射光，实现指纹识别。进一步地，所述光传感器102也可位于所述黑矩阵3012下方，所述黑矩阵3012上设置有过孔以暴露出所述光传感器102，使得所述光传感器102可以接收来自外部的环境光或指纹的反射光，以实现光能与电能的转换，或实现指纹的识别，如图3F～图3H所示。\n\n[0075]所述黑矩阵3012可位于所述彩膜单元3011之上，如图3D和图3F所示；所述黑矩阵3012也可位于多个所述彩膜单元3011之间的间隙内，如图3B～图3C和图3G～图3I；或所述黑矩阵3012位于所述彩膜单元3011之下，如图3E所示。\n\n[0076]此外，所述光传感器102也可位于阵列基板303侧，以便于后续实现对所述光传感器102所转换出的所述电能的收集的设计，在一定程度上降低制程难度，降低生产成本。即在如图3I所示的所述显示面板中，所述光传感器102位于所述阵列基板103对应所述黑矩阵3012的区域。\n\n[0077]此外，多个所述光传感器102可设置为不同层，如图3H所示，即所述光传感器102位于所述彩膜基板301侧和所述阵列基板303侧。\n\n[0078]请继续参阅图3A～图3I，所述阵列基板303还包括衬底；位于所述衬底上的薄膜晶体管、像素电极及第一配向层等未示出部分，所述彩膜基板301还包括公共电极、第二配向层等未示出部分。\n\n[0079]在图3A～图3I所示的显示面板中，所述彩膜单元3011均位于所述彩膜基板301侧；本领域的相关技术人员也可将所述彩膜单元3011设置于所述阵列基板303侧，当所述彩膜单元3011设置于所述阵列基板303侧时，在俯视视角下，所述光传感器102位于多个所述彩膜单元3011之间，而在垂直于所述阵列基板303的方向上，所述光传感器102可位于多个所述彩膜单元3011之间的间隙内，也可根据所述显示面板的结构进行调整，在此对其不再进行赘述。\n\n[0080]请参阅图5A～图5C，其为本申请的实施例提供的电能收集电路的结构示意图，所述显示面板还包括电能收集电路，与所述至少一光传感器102电性连接，用于存储所述电能，以便于所述显示面板随时取用所述电能。\n\n[0081]具体地，所述电能收集电路还包括：\n\n[0082]充电芯片501，所述充电芯片501与所述光传感器102电性连接；以及，\n\n[0083]储能装置502，所述光传感器102通过所述充电芯片501为所述储能装置502充电。\n\n[0084]具体地，当所述光传感器102处于第一状态时，所述光传感器102将接收的光能转换为电能，并利用所述电能收集电路中的所述充电芯片501收集所述光传感器102转换的电能，收集的所述电能被所述储能装置502存储，以便所述电能可以被所述显示面板应用，从而提高所述显示面板的续航能力。\n\n[0085]所述充电芯片102可通过覆晶薄膜等形式实现与所述光传感器102的电性连接。若所述显示面板本身已设置充电芯片，则可以继续沿用原有的充电芯片以收集所述光传感器102转换的电能；进一步地，为避免共用一颗充电芯片影响显示面板的正常工作，也可再增设一充电芯片，增设的所述充电芯片用于收集所述光传感器102转换的电能。\n\n[0086]所述充电芯片501工作时所需的电能需小于所述光传感器102所述产生的电能，以避免所述充电芯片501的功耗较大，致使所述光传感器102所产生的电能未被所述显示面板应用，而只被所述充电芯片501取用，反而增大了所述显示面板的功耗。在实际生产时，所述充电芯片501的选型需结合实际的所述显示面板的类型、参数等进行确定，在此不再对其进行赘述。\n\n[0087]所述储能装置502包括蓄电池，所述储能装置502可以与所述显示面板的原有储能装置共用，以降低所述显示面板的成本。\n\n[0088]请继续参阅图5B～图5C，所述电能收集电路还包括位于多个所述光传感器102与所述充电芯片501之间的升压电路503，以使所述光传感器102转换得到的所述电能先升压至相同的电压等级，再利用所述充电芯片501对所述储能装置502进行充电，以避免多个所述光传感器102之间转换得到的所述电能的电压等级或电流值等参数具有差异，对所述充电芯片501和所述储能装置502造成的伤害。\n\n[0089]进一步地，所述升压电路503至少包括一电容C及电感L，多个所述光传感器102与所述电容C并联，所述电感L的一端与所述电容C连接，所述电感L的另一端与所述充电芯片501电性连接。\n\n[0090]具体地，以所述光传感器102为光电二极管为例，每个所述光传感器102均具有阳极和阴极，多个所述光传感器102的阳极与所述电容C的一端连接，多个所述光传感器102的阴极与所述电容C的另一端连接且接地，所述电感L的一端与所述电容C连接所述光传感器102阳极的一端连接，所述电感L的另一端与所述充电芯片电性连接，如图5C所示。\n\n[0091]请参阅图6A～图6B，其为本申请的实施例提供的信号读取电路的结构示意图，所述信号读取电路还包括：\n\n[0092]读取电路601，所述读取电路601用于读取所述电信号；\n\n[0093]读取芯片602，与多个所述读取电路601电性连接，所述读取芯片602用于根据多个所述电信号之间的差异识别指纹。\n\n[0094]具体地，当所述光传感器102处于第二状态时，每一所述光传感器102根据指纹脊谷之间反射光的差异产生不同的所述电信号，所述读取电路601读取所述电信号，并将所述电信号反馈至所述读取芯片602中，所述读取芯片602对多个所述电信号进行判断，并根据所述电信号之间的差异实现指纹脊谷的识别，从而实现指纹的识别。其中，所述光传感器102根据指纹脊谷之间反射光的差异产生的多个所述电信号为电流。\n\n[0095]请继续参阅图6B，每一所述读取电路601还包括：\n\n[0096]存储电容Cst，所述存储电容Cst与所述光传感器102并联，所述存储电容Cst的第一极接入偏压信号Vb；\n\n[0097]晶体管T，所述晶体管T的栅极与扫描信号线Scan(n)连接，所述晶体管T的第一极与读取信号线Read连接，所述晶体管T的第二极与所述存储电容Cst的第二极连接。\n\n[0098]具体地，以所述光传感器102为光电二极管为例，每个所述光传感器102均具有阳极和阴极，所述阳极与所述存储电容Cst的第一极连接，所述阴极与所述存储电容Cst的所述第二极连接，如图6B所示。\n\n[0099]所述显示面板具有多个所述读取电路601，多个所述读取电路601阵列式分布，每个所述读取电路601对应包括一所述光传感器102，以使每个所述光传感器102均产生所述电信号。在所述光传感器102用于指纹识别时，每个所述光传感器102接收指纹脊谷之间的反射光不同，会产生多个不同的所述电信号，每个所述电信号存储在对应的所述读取电路601的所述存储电容Cst中，在所述读取电路601的所述扫描信号线Scan(n)载入的扫描信号有效时，所述晶体管T导通，所述存储电容Cst通过所述读取信号线Read释放存储的电信号至所述读取芯片602，所述读取芯片602对同一时间内接收到的多个所述电信号进行判断，并根据多个所述电信号之间的差异识别指纹。\n\n[0100]其中，所述晶体管T为场效应晶体管；进一步地，所述晶体管T为薄膜晶体管，所述晶体管T的第一极为源极或漏极的其中之一，所述晶体管T的第二极为源极或漏极的另一。\n\n[0101]所述显示面板可通过时序控制方式实现所述光传感器102第一状态与第二状态之间的切换，使所述电能收集电路或所述信号读取电路分时工作，以使所述光传感器102工作于光能转化为电能的工作状态或使所述光传感器102工作于指纹识别的工作状态。此外，还可通过转换电路的方式实现所述光传感器102第一状态与第二状态之间的切换；进一步地，所述转换电路为可控开关，所述可控开关根据给定的信号接通所述电能收集电路或所述信号读取电路，以使所述光传感器102工作于光能转化为电能的工作状态或使所述光传感器102工作于指纹识别的工作状态。其中，所述给定的信号可由所述显示面板的控制芯片给出，也可根据实际需求进行设定，在此不再对其进行赘述。\n\n[0102]在图6B所示的所述信号读取电路中，仅以所述晶体管T为N型晶体管的形式予以说明，本领域的相关技术人员也可采用P型晶体管实现所述信号读取电路，在此对其不再进行赘述。\n\n[0103]本申请还提供一种显示装置，所述显示装置包括所述的显示面板。具体地，所述显示面板包括可移动终端设备及非移动终端设备；进一步地，所述可移动终端设备包括手机、手表、笔记本电脑、带显示屏的手环等设备；所述非移动终端包括电视、台式电脑等设备。\n\n[0104]所述显示装置还可包括触控面板，所述触控面板可以以外挂式或内置式形式与所述显示面板结合。\n\n[0105]本申请实施例提供的显示面板及显示装置，所述显示面板包括：多个间隔设置的像素单元101；至少一光传感器102，在俯视视角下，每一所述光传感器102位于对应的所述像素单元101的一侧，所述光传感器102用于将接收的光能转换为电能，以实现节能的效果，提升显示面板的续航能力。\n\n[0106]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0107]以上对本申请实施例所提供的显示面板及显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10833, 23887, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其是涉及一种显示面板和显示装置。\n\n背景技术\n\n[0002]现有MicroLED(微型发光二极管)显示面板会采用双层黄色聚酰亚胺作为衬底，但在MicroLED显示面板的制备过程中，在对薄膜晶体管进行高温制程时，双层黄色聚酰亚胺会出现翘曲，且黄色聚酰亚胺出现卷曲，导致MicroLED显示面板出现翘曲，同时，在对玻璃进行激光玻璃时，会出现最底层的黄色聚酰亚胺出现碳化，即现有MicroLED在制备过程中，会出现翘曲，黄色聚酰亚胺卷曲和碳化的问题。\n\n[0003]所以，现有MicroLED显示面板存在黄色聚酰亚胺出现翘曲，导致MicroLED显示面板出现翘曲的技术问题。\n\n发明内容\n\n[0004]本申请实施例提供一种显示面板和显示装置，用以解决现有MicroLED显示面板存在黄色聚酰亚胺出现翘曲，导致MicroLED显示面板出现翘曲的技术问题。\n\n[0005]本申请实施例提供一种显示面板，该显示面板包括：\n\n[0006]牺牲层；\n\n[0007]第一柔性层，设置于所述牺牲层上；\n\n[0008]第一阻挡层，设置于所述第一柔性层上；\n\n[0009]第二柔性层，设置于所述第一阻挡层上；\n\n[0010]第二阻挡层，设置于所述第二柔性层上；\n\n[0011]驱动电路层，设置于所述第二阻挡层上；\n\n[0012]微型发光二极管芯片，设置于所述驱动电路层上；\n\n[0013]其中，所述第一柔性层与所述第二柔性层的材料不同，且所述第一柔性层与所述第二柔性层的内应力方向相反。\n\n[0014]在一些实施例中，所述第一柔性层的材料为黄色聚酰亚胺，所述第二柔性层的材料为无色聚酰亚胺。\n\n[0015]在一些实施例中，所述第一柔性层的材料为无色聚酰亚胺，所述第二柔性层的材料为黄色聚酰亚胺。\n\n[0016]在一些实施例中，所述第一柔性层的厚度大于或者等于所述第二柔性层的厚度。\n\n[0017]在一些实施例中，所述牺牲层的材料包括氧化硅、氮化硅、非晶硅、氧化铟锡中的一种。\n\n[0018]在一些实施例中，所述牺牲层的厚度范围为所述第一柔性层的厚度的十分之一至五分之一。\n\n[0019]在一些实施例中，所述牺牲层与所述第一柔性层之间设有阻隔层。\n\n[0020]在一些实施例中，所述阻隔层的厚度范围为所述第一柔性层的厚度的十分之一至五分之一。\n\n[0021]在一些实施例中，所述阻隔层的材料包括二氧化硅。\n\n[0022]同时，本申请实施例提供一种显示装置，该显示装置包括显示面板和盖板，所述显示面板包括：\n\n[0023]牺牲层；\n\n[0024]第一柔性层，设置于所述牺牲层上；\n\n[0025]第一阻挡层，设置于所述第一柔性层上；\n\n[0026]第二柔性层，设置于所述第一阻挡层上；\n\n[0027]第二阻挡层，设置于所述第二柔性层上；\n\n[0028]驱动电路层，设置于所述第二阻挡层上；\n\n[0029]微型发光二极管芯片，设置于所述驱动电路层上；\n\n[0030]其中，所述第一柔性层与所述第二柔性层的材料不同，且所述第一柔性层与所述第二柔性层的内应力方向相反。\n\n[0031]有益效果：本申请实施例提供一种显示面板和显示装置，该显示面板包括牺牲层、第一柔性层、第一阻挡层、第二柔性层、第二阻挡层和驱动电路层，所述第一柔性层设置于所述牺牲层上，所述第一阻挡层设置于所述第一柔性层上，所述第二柔性层设置于所述第一阻挡层上，所述第二阻挡层设置于所述第二柔性层上，所述驱动电路层设置于所述第二阻挡层上，所述微型发光二极管芯片设置于所述驱动电路层上，其中，所述第一柔性层与所述第二柔性层的材料不同，且所述第一柔性层与所述第二柔性层的内应力方向相反；通过将第一柔性层与第二柔性层的材料设置为不同，且使得第一柔性层和第二柔性层的内应力方向相反，使得在制备显示面板时，可以使得第一柔性层与第二柔性层的内应力相互抵消，从而使得第一柔性层和第二柔性层不出现翘曲，且第一柔性层和第二柔性层不出现卷曲，显示面板不出现翘曲，且牺牲层可以避免第一柔性层出现碳化的现象，解决了现有MicroLED显示面板存在黄色聚酰亚胺出现翘曲，导致MicroLED显示面板出现翘曲的技术问题。\n\n附图说明\n\n[0032]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0033]图1为现有MicroLED显示面板的示意图。\n\n[0034]图2为现有MicroLED显示面板翘曲的示意图。\n\n[0035]图3为现有MicroLED显示面板中的柔性层弯曲的示意图。\n\n[0036]图4为本申请实施例提供的显示面板的示意图。\n\n[0037]图5为本申请实施例提供的采用无色聚酰亚胺作为柔性层时翘曲的示意图。\n\n[0038]图6为本申请实施例提供的显示装置的示意图。\n\n具体实施方式\n\n[0039]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0040]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0041]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0042]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0043]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0044]本申请实施例针对现有MicroLED显示面板存在黄色聚酰亚胺出现翘曲，导致MicroLED显示面板出现翘曲的技术问题。\n\n[0045]如图1所示，现有MicroLED显示面板包括黄色聚酰亚胺层121、第一阻挡层122、黄色聚酰亚胺层123、第二阻挡层124、缓冲层131、有源层132、栅极绝缘层133、栅极层134、层间绝缘层135、源漏极层136、平坦化层137、像素电极层14、绝缘层15、MicroLED16和公共电极层17，在制备MicroLED显示面板时，会在黄色聚酰亚胺121下设置玻璃11，但在对薄膜晶体管进行制备时，由于需要采用高温制程，导致双层黄色聚酰亚胺出现翘曲，如图2所示，在制备过程中，在载台21上会出现玻璃基板22出现翘曲现象，导致在玻璃基板22的其他制程过程中，玻璃基板会出现破片风险，进而导致玻璃基板失效，且在采用激光剥离玻璃11时，如图3所示，双层黄色聚酰亚胺121容易出现卷曲，导致MicroLED显示面板不平整，且容易导致水氧入侵，同时，在激光剥离玻璃的过程中，底层的黄色聚酰亚胺容易出现碳化层，导致聚酰亚胺的柔性较差，所以，现有MicroLED显示面板存在黄色聚酰亚胺出现翘曲，导致MicroLED显示面板出现翘曲的技术问题。\n\n[0046]如图4所示，本申请实施例提供一种显示面板，该显示面板包括：\n\n[0047]牺牲层40；\n\n[0048]第一柔性层421，设置于所述牺牲层40上；\n\n[0049]第一阻挡层422，设置于所述第一柔性层421上；\n\n[0050]第二柔性层423，设置于所述第一阻挡层422上；\n\n[0051]第二阻挡层424，设置于所述第二柔性层423上；\n\n[0052]驱动电路层43，设置于所述第二阻挡层424上；\n\n[0053]微型发光二极管芯片46，设置于所述驱动电路层43上；\n\n[0054]其中，所述第一柔性层421与所述第二柔性层423的材料不同，且所述第一柔性层421与所述第二柔性层423的内应力方向相反。\n\n[0055]本申请实施例提供一种显示面板，该显示面板包括牺牲层、第一柔性层、第一阻挡层、第二柔性层、第二阻挡层和驱动电路层，所述第一柔性层设置于所述牺牲层上，所述第一阻挡层设置于所述第一柔性层上，所述第二柔性层设置于所述第一阻挡层上，所述第二阻挡层设置于所述第二柔性层上，所述驱动电路层设置于所述第二阻挡层上，所述微型发光二极管芯片设置于所述驱动电路层上，其中，所述第一柔性层与所述第二柔性层的材料不同，且所述第一柔性层与所述第二柔性层的内应力方向相反；通过将第一柔性层与第二柔性层的材料设置为不同，且使得第一柔性层和第二柔性层的内应力方向相反，使得在制备显示面板时，可以使得第一柔性层与第二柔性层的内应力相互抵消，从而使得第一柔性层和第二柔性层不出现翘曲，且第一柔性层和第二柔性层不出现卷曲，显示面板不出现翘曲，且牺牲层可以避免第一柔性层出现碳化的现象，解决了现有MicroLED显示面板存在黄色聚酰亚胺出现翘曲，导致MicroLED显示面板出现翘曲的技术问题。\n\n[0056]在一种实施例中，所述第一柔性层的材料为黄色聚酰亚胺，所述第二柔性层的材料为无色聚酰亚胺，针对现有MicroLED显示面板中第一柔性层和第二柔性层采用相同的黄色聚酰亚胺制备，导致MicroLED显示面板翘曲的问题，本申请考虑到无色聚酰亚胺的内应力与黄色聚酰亚胺的内应力的方向相反，如图5所示，仅具有无色聚酰亚胺的MicroLED显示面板52在载台51上的翘曲方向与具有双层黄色聚酰亚胺的MicroLED显示面板的翘曲方向相反，本申请实施例根据上述原理，将第一柔性层设置为黄色聚酰亚胺，将第二柔性层设置为无色聚酰亚胺，从而使得第一柔性层和第二柔性层的内应力相反，从而使得在制备显示面板中的薄膜晶体管时，显示面板中的第一柔性层和第二柔性层的内应力抵消，从而避免了第一柔性层和第二柔性层出现翘曲，避免了第一柔性层和第二柔性层出现卷曲，进而避免了显示面板出现翘曲。\n\n[0057]在一种实施例中，所述第一柔性层的材料为无色聚酰亚胺，所述第二柔性层的材料为黄色聚酰亚胺，即为了避免第一柔性层和第二柔性层翘曲，避免第一柔性层和第二柔性层出现卷曲，也可以使得第一柔性层为无色聚酰亚胺，第二柔性层为黄色聚酰亚胺，从而使得第一柔性层和第二柔性层的内应力抵消，从而避免显示面板出现翘曲。\n\n[0058]在一种实施例中，所述第一柔性层包括第一区域和第二区域，所述第一区域的材料为无色聚酰亚胺，所述第二区域的材料为黄色聚酰亚胺，所述第二柔性层包括第三区域和第四区域，所述第三区域与所述第一区域在第一阻挡层上的投影重合，所述第四区域与所述第二区域在第一阻挡层上的投影重合，所述第三区域的材料为黄色聚酰亚胺，所述第四区域的材料为无色聚酰亚胺，即在设置第一柔性层和第二柔性层时，在不影响第一柔性层和第二柔性层的完整性、柔性和与阻挡层形成的阻隔水氧的能力时，可以在第一柔性层上同时设置无色聚酰亚胺和黄色聚酰亚胺，相应的在第二柔性层上设置无色聚酰亚胺和黄色聚酰亚胺，从而使得第一柔性层与第二柔性层的内应力抵消，因此，本申请实施例对第一柔性层和第二柔性层的材料和设置方式不进行限制，在设置第一柔性层和第二柔性层时，还可以将第一柔性层和第二柔性层设置为交叉设置的无色聚酰亚胺和黄色聚酰亚胺。\n\n[0059]在一种实施例中，所述第一柔性层的厚度大于或者等于所述第二柔性层的厚度，在设置第一柔性层和第二柔性层的厚度时，可以使得第一柔性层的厚度大于或者等于所述第二柔性层的厚度，考虑到第一柔性层设置在下方，可以使得第一柔性层的厚度较大，从而避免第一柔性层损伤后暴露第一阻挡层，同时，第一柔性层可以提高显示面板的柔性，同时，在考虑到第一柔性层和第二柔性层的内应力时，将第一柔性层与第二柔性层的厚度设置为相同，可以使得第一柔性层与第二柔性层的内应力相同，从而相互抵消，在实际过程中，考虑到其他膜层也会存在内应力，可以使得第一柔性层和第二柔性层的厚度不同，即第一柔性层的厚度可以大于第二柔性层的厚度，或者第一柔性层的厚度小于第二柔性层的厚度，从而使得显示面板的内应力抵消，显示面板不出现翘曲。\n\n[0060]在一种实施例中，所述牺牲层的材料包括氧化硅、氮化硅、非晶硅、氧化铟锡中的一种，在为了激光剥离玻璃时，激光会对第一柔性层产生损伤，可以在第一柔性层下采用氧化硅、氮化硅、非晶硅、氧化铟锡等材料制备牺牲层，从而使得牺牲层在激光剥离玻璃时，可以对第一柔性层进行保护，从而避免第一柔性层出现卷曲或者碳化，且即使在激光剥离玻璃时，激光对牺牲层产生损伤，由于牺牲层的损伤不会对显示面板产生影响，因此能够使得显示面板正常工作，且在牺牲层未被损伤时，由于牺牲层采用无机材料，使得牺牲层可以阻隔水氧，提高显示面板的阻隔水氧的能力。\n\n[0061]在一种实施例中，所述牺牲层的材料包括有机材料，在设置牺牲层时，为了尽量避免牺牲层对显示面板的柔性产生影响，可以采用有机材料形成牺牲层。\n\n[0062]在一种实施例中，所述牺牲层的厚度范围为所述第一柔性层的厚度的十分之一至五分之一，考虑到牺牲层可能会影响显示面板的厚度，可以将牺牲层的厚度设计的较薄，例如牺牲层的厚度为第一柔性层的厚度的八分之一，从而使得牺牲层在激光剥离玻璃时，牺牲层可以尽量被剥离，从而避免牺牲层保留在显示面板上，但在设置牺牲层的厚度时，要保证牺牲层可以对第一柔性层进行保护，从而避免第一柔性层出现损伤。\n\n[0063]在一种实施例中，如图4所示，所述牺牲层40与所述第一柔性层421之间设有阻隔层41，通过在牺牲层和第一柔性层之间设置阻隔层，使得即使牺牲层破损，也还有阻隔层对第一柔性层进行保护，从而避免第一柔性层在激光剥离玻璃时受到损伤，且阻隔层能够增加第一柔性层的粘附力，避免第一柔性层脱落。\n\n[0064]在一种实施例中，所述阻隔层的厚度范围为所述第一柔性层的厚度的十分之一至五分之一，在设置阻隔层时，为了避免显示面板的厚度较大，可以使得阻隔层的厚度较小，例如阻隔层的厚度为第一柔性层的厚度的十分之一，从而使得阻隔层保护第一柔性层，同时，阻隔层的厚度不会较大，对显示面板的厚度影响较小。\n\n[0065]在一种实施例中，所述阻隔层的材料包括二氧化硅、氮化硅中的至少一种，在设置阻隔层的材料时，可以采用二氧化硅制备阻隔层，从而使得二氧化硅对第一柔性层进行保护的同时，二氧化硅对水氧进行阻隔，提高了显示面板的阻隔水氧的能力。\n\n[0066]在一种实施例中，所述第一阻挡层的材料包括氧化硅、氮化硅中的至少一种，即在设置第一阻挡层时，可以使得第一阻挡层的材料为氧化硅、或者使得第一阻挡层的材料为氮化硅、或者使得第一阻挡层为氧化硅和氮化硅的叠层，从而对水氧进行隔绝。\n\n[0067]在一种实施例中，所述第二阻挡层的材料包括氧化硅、氮化硅中的至少一种，即在设置第二阻挡层时，可以使得第二阻挡层的材料为氧化硅、或者使得第二阻挡层的材料为氮化硅、或者使得第二阻挡层为氧化硅和氮化硅的叠层，从而对水氧进行隔绝，在使用第一柔性层、第一阻挡层、第二柔性层和第二阻挡层的结构对水氧进行隔绝，避免水氧入侵时，第一阻挡层和第二阻挡层采用无机材料，第一阻挡层和第二阻挡层可以采用相同的材料，也可以采用不同材料，从而对配合第二柔性层对水氧进行隔绝，且第一柔性层和第二柔性层可以提高显示面板的柔性，提高显示面板的弯曲能力。\n\n[0068]在一种实施例中，如图4所示，所述驱动电路层43包括缓冲层431、设置于所述缓冲层431上的有源层432、设置于所述有源层432上的栅极绝缘层433、设置于所述栅极绝缘层433上的栅极层434、设置于所述栅极层434上的层间绝缘层435、设置于所述层间绝缘层435上的源漏极层436，设置于所述源漏极层436上的平坦化层437，即在本申请实施例中的显示面板中，驱动电路层可以由具有一层栅极层的薄膜晶体管组成，驱动电路层也可以由具有两层栅极层的薄膜晶体管组成，薄膜晶体管可以为顶栅薄膜晶体管、也可以为底栅薄膜晶体管。\n\n[0069]在一种实施例中，所述第一柔性层设有凹槽，在为了避免柔性层的应力导致显示面板出现翘曲时，除了采用上述实施例中的第一柔性层和第二柔性层的应力抵消外，还可以通过在第一柔性层上设置凹槽，从而使得凹槽降低第一柔性层的内应力，从而避免第一柔性层的内应力过大导致第一柔性层翘曲，导致显示面板翘曲。\n\n[0070]在一种实施例中，所述第二柔性层设有凹槽，在为了避免柔性层的应力导致显示面板出现翘曲时，除了采用上述实施例中的第一柔性层和第二柔性层的应力抵消外，还可以通过在第二柔性层上设置凹槽，从而使得凹槽降低第二柔性层的内应力，从而避免第二柔性层的内应力过大导致第二柔性层翘曲，导致显示面板翘曲。\n\n[0071]在一种实施例中，所述第一柔性层和第二柔性层设有凹槽，通过在第一柔性层和第二柔性层中设置凹槽，降低第一柔性层和第二柔性层的内应力，同时，使得第一柔性层和第二柔性层的内应力抵消，从而避免显示面板出现翘曲。\n\n[0072]在一种实施例中，所述第一柔性层设有第一凹槽，所述第二柔性层设有第二凹槽，所述第一柔性层的材料为黄色聚酰亚胺，所述第二柔性层的材料为无色聚酰亚胺，所述第一凹槽内填充有无色聚酰亚胺，所述第二凹槽内填充有黄色聚酰亚胺，即在采用凹槽降低第一柔性层和第二柔性层的内应力的同时，通过采用在黄色聚酰亚胺中填充无色聚酰亚胺，在无色聚酰亚胺中填充黄色聚酰亚胺，从而使得第一柔性层和第二柔性层的内应力能够自身抵消一部分甚至完全抵消，然后第一柔性层与第二柔性层通过相反的内应力将内应力抵消，从而避免了显示面板翘曲。\n\n[0073]在一种实施例中，如图4所示，显示面板还包括像素电极层44、绝缘层45、公共电极层47，在微型发光二极管芯片与电极相连时，可以采用图4中将微型发光二极管芯片的两个电极分别设置在两端，然后分别与像素电极层和公共电极层连接，还可以将微型发光二极管芯片的两个电极设置在同一端，然后将像素电极层与公共电极层设置于所述微型发光二极管芯片的同一侧，从而使得微型发光二极管芯片的两个电极与像素电极层和公共电极层连接，从而实现微型发光二极管芯片的发光。\n\n[0074]如图6所示，本申请实施例提供一种显示装置，该显示装置包括显示面板和盖板61，所述显示面板包括：\n\n[0075]牺牲层40；\n\n[0076]第一柔性层421，设置于所述牺牲层40上；\n\n[0077]第一阻挡层422，设置于所述第一柔性层421上；\n\n[0078]第二柔性层423，设置于所述第一阻挡层422上；\n\n[0079]第二阻挡层424，设置于所述第二柔性层423上；\n\n[0080]驱动电路层43，设置于所述第二阻挡层424上；\n\n[0081]微型发光二极管芯片46，设置于所述驱动电路层43上；\n\n[0082]其中，所述第一柔性层421与所述第二柔性层423的材料不同，且所述第一柔性层421与所述第二柔性层423的内应力方向相反。\n\n[0083]本申请实施例提供一种显示装置，该显示装置包括显示面板和盖板，所述显示面板包括牺牲层、第一柔性层、第一阻挡层、第二柔性层、第二阻挡层和驱动电路层，所述第一柔性层设置于所述牺牲层上，所述第一阻挡层设置于所述第一柔性层上，所述第二柔性层设置于所述第一阻挡层上，所述第二阻挡层设置于所述第二柔性层上，所述驱动电路层设置于所述第二阻挡层上，所述微型发光二极管芯片设置于所述驱动电路层上，其中，所述第一柔性层与所述第二柔性层的材料不同，且所述第一柔性层与所述第二柔性层的内应力方向相反；通过将第一柔性层与第二柔性层的材料设置为不同，且使得第一柔性层和第二柔性层的内应力方向相反，使得在制备显示面板时，可以使得第一柔性层与第二柔性层的内应力相互抵消，从而使得第一柔性层和第二柔性层不出现翘曲，且第一柔性层和第二柔性层不出现卷曲，显示面板不出现翘曲，且牺牲层可以避免第一柔性层出现碳化的现象，解决了现有MicroLED显示面板存在黄色聚酰亚胺出现翘曲，导致MicroLED显示面板出现翘曲的技术问题。\n\n[0084]在一种实施例中，所述微型发光二极管芯片包括Micro-LED芯片和Mini-LED(迷你发光二极管)芯片。\n\n[0085]在一种实施例中，在显示装置中，所述第一柔性层的材料为黄色聚酰亚胺，所述第二柔性层的材料为无色聚酰亚胺。\n\n[0086]在一种实施例中，在显示装置中，所述第一柔性层的材料为无色聚酰亚胺，所述第二柔性层的材料为黄色聚酰亚胺。\n\n[0087]在一种实施例中，在显示装置中，所述第一柔性层的厚度大于或者等于所述第二柔性层的厚度。\n\n[0088]在一种实施例中，在显示装置中，所述牺牲层的材料包括氧化硅、氮化硅、非晶硅、氧化铟锡中的一种。\n\n[0089]在一种实施例中，在显示装置中，所述牺牲层的厚度范围为所述第一柔性层的厚度的十分之一至五分之一。\n\n[0090]在一种实施例中，在显示装置中，所述牺牲层与所述第一柔性层之间设有阻隔层。\n\n[0091]在一种实施例中，在显示装置中，所述阻隔层的厚度范围为所述第一柔性层的厚度的十分之一至五分之一。\n\n[0092]在一种实施例中，在显示装置中，所述阻隔层的材料包括二氧化硅。\n\n[0093]在一种实施例中，本申请实施例提供一种显示面板制备方法，该显示面板制备方法包括：\n\n[0094]提供玻璃基板；\n\n[0095]在玻璃基板上形成牺牲层；\n\n[0096]在牺牲层上形成阻隔层；\n\n[0097]在阻隔层上形成第一柔性层；\n\n[0098]在第一柔性层上形成第一阻挡层；\n\n[0099]在第一阻挡层上形成第二柔性层；所述第一柔性层与所述第二柔性层的材料不同，且所述第一柔性层与所述第二柔性层的内应力方向相反；\n\n[0100]在第二柔性层上形成第二阻挡层；\n\n[0101]在第二阻挡层上形成驱动电路层；\n\n[0102]在驱动电路层上形成微型发光二极管芯片；\n\n[0103]激光剥离玻璃基板。\n\n[0104]本申请实施例提供一种显示面板制备方法，通过在第一柔性层下设置牺牲层，使得在激光剥离玻璃基板时，激光仅会对牺牲层产生损伤，甚至不对牺牲层产生损失，从而保护了第一柔性层，同时，第一柔性层和第二柔性层的材料不同，第一柔性层和第二柔性层的内应力相反，使得第一柔性层与第二柔性层的内应力相互抵消，从而使得第一柔性层和第二柔性层不出现翘曲，且第一柔性层和第二柔性层不出现卷曲，显示面板不出现翘曲，解决了现有MicroLED显示面板存在黄色聚酰亚胺出现翘曲，导致MicroLED显示面板出现翘曲的技术问题。\n\n[0105]根据以上实施例可知：\n\n[0106]本申请实施例提供一种显示面板和显示装置，该显示面板包括牺牲层、第一柔性层、第一阻挡层、第二柔性层、第二阻挡层和驱动电路层，所述第一柔性层设置于所述牺牲层上，所述第一阻挡层设置于所述第一柔性层上，所述第二柔性层设置于所述第一阻挡层上，所述第二阻挡层设置于所述第二柔性层上，所述驱动电路层设置于所述第二阻挡层上，所述微型发光二极管芯片设置于所述驱动电路层上，其中，所述第一柔性层与所述第二柔性层的材料不同，且所述第一柔性层与所述第二柔性层的内应力方向相反；通过将第一柔性层与第二柔性层的材料设置为不同，且使得第一柔性层和第二柔性层的内应力方向相反，使得在制备显示面板时，可以使得第一柔性层与第二柔性层的内应力相互抵消，从而使得第一柔性层和第二柔性层不出现翘曲，且第一柔性层和第二柔性层不出现卷曲，显示面板不出现翘曲，且牺牲层可以避免第一柔性层出现碳化的现象，解决了现有MicroLED显示面板存在黄色聚酰亚胺出现翘曲，导致MicroLED显示面板出现翘曲的技术问题。\n\n[0107]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0108]以上对本申请实施例所提供的一种显示面板和显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其是涉及一种显示面板和显示装置。\n\n背景技术\n\n[0002]现有MicroLED(微型发光二极管)显示面板会采用双层黄色聚酰亚胺作为衬底，但在MicroLED显示面板的制备过程中，在对薄膜晶体管进行高温制程时，双层黄色聚酰亚胺会出现翘曲，且黄色聚酰亚胺出现卷曲，导致MicroLED显示面板出现翘曲，同时，在对玻璃进行激光玻璃时，会出现最底层的黄色聚酰亚胺出现碳化，即现有MicroLED在制备过程中，会出现翘曲，黄色聚酰亚胺卷曲和碳化的问题。\n\n[0003]所以，现有MicroLED显示面板存在黄色聚酰亚胺出现翘曲，导致MicroLED显示面板出现翘曲的技术问题。\n\n发明内容\n\n[0004]本申请实施例提供一种显示面板和显示装置，用以解决现有MicroLED显示面板存在黄色聚酰亚胺出现翘曲，导致MicroLED显示面板出现翘曲的技术问题。\n\n[0005]本申请实施例提供一种显示面板，该显示面板包括：\n\n[0006]牺牲层；\n\n[0007]第一柔性层，设置于所述牺牲层上；\n\n[0008]第一阻挡层，设置于所述第一柔性层上；\n\n[0009]第二柔性层，设置于所述第一阻挡层上；\n\n[0010]第二阻挡层，设置于所述第二柔性层上；\n\n[0011]驱动电路层，设置于所述第二阻挡层上；\n\n[0012]微型发光二极管芯片，设置于所述驱动电路层上；\n\n[0013]其中，所述第一柔性层与所述第二柔性层的材料不同，且所述第一柔性层与所述第二柔性层的内应力方向相反。\n\n[0014]在一些实施例中，所述第一柔性层的材料为黄色聚酰亚胺，所述第二柔性层的材料为无色聚酰亚胺。\n\n[0015]在一些实施例中，所述第一柔性层的材料为无色聚酰亚胺，所述第二柔性层的材料为黄色聚酰亚胺。\n\n[0016]在一些实施例中，所述第一柔性层的厚度大于或者等于所述第二柔性层的厚度。\n\n[0017]在一些实施例中，所述牺牲层的材料包括氧化硅、氮化硅、非晶硅、氧化铟锡中的一种。\n\n[0018]在一些实施例中，所述牺牲层的厚度范围为所述第一柔性层的厚度的十分之一至五分之一。\n\n[0019]在一些实施例中，所述牺牲层与所述第一柔性层之间设有阻隔层。\n\n[0020]在一些实施例中，所述阻隔层的厚度范围为所述第一柔性层的厚度的十分之一至五分之一。\n\n[0021]在一些实施例中，所述阻隔层的材料包括二氧化硅。\n\n[0022]同时，本申请实施例提供一种显示装置，该显示装置包括显示面板和盖板，所述显示面板包括：\n\n[0023]牺牲层；\n\n[0024]第一柔性层，设置于所述牺牲层上；\n\n[0025]第一阻挡层，设置于所述第一柔性层上；\n\n[0026]第二柔性层，设置于所述第一阻挡层上；\n\n[0027]第二阻挡层，设置于所述第二柔性层上；\n\n[0028]驱动电路层，设置于所述第二阻挡层上；\n\n[0029]微型发光二极管芯片，设置于所述驱动电路层上；\n\n[0030]其中，所述第一柔性层与所述第二柔性层的材料不同，且所述第一柔性层与所述第二柔性层的内应力方向相反。\n\n[0031]有益效果：本申请实施例提供一种显示面板和显示装置，该显示面板包括牺牲层、第一柔性层、第一阻挡层、第二柔性层、第二阻挡层和驱动电路层，所述第一柔性层设置于所述牺牲层上，所述第一阻挡层设置于所述第一柔性层上，所述第二柔性层设置于所述第一阻挡层上，所述第二阻挡层设置于所述第二柔性层上，所述驱动电路层设置于所述第二阻挡层上，所述微型发光二极管芯片设置于所述驱动电路层上，其中，所述第一柔性层与所述第二柔性层的材料不同，且所述第一柔性层与所述第二柔性层的内应力方向相反；通过将第一柔性层与第二柔性层的材料设置为不同，且使得第一柔性层和第二柔性层的内应力方向相反，使得在制备显示面板时，可以使得第一柔性层与第二柔性层的内应力相互抵消，从而使得第一柔性层和第二柔性层不出现翘曲，且第一柔性层和第二柔性层不出现卷曲，显示面板不出现翘曲，且牺牲层可以避免第一柔性层出现碳化的现象，解决了现有MicroLED显示面板存在黄色聚酰亚胺出现翘曲，导致MicroLED显示面板出现翘曲的技术问题。\n\n附图说明\n\n[0032]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0033]图1为现有MicroLED显示面板的示意图。\n\n[0034]图2为现有MicroLED显示面板翘曲的示意图。\n\n[0035]图3为现有MicroLED显示面板中的柔性层弯曲的示意图。\n\n[0036]图4为本申请实施例提供的显示面板的示意图。\n\n[0037]图5为本申请实施例提供的采用无色聚酰亚胺作为柔性层时翘曲的示意图。\n\n[0038]图6为本申请实施例提供的显示装置的示意图。\n\n具体实施方式\n\n[0039]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0040]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0041]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0042]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0043]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0044]本申请实施例针对现有MicroLED显示面板存在黄色聚酰亚胺出现翘曲，导致MicroLED显示面板出现翘曲的技术问题。\n\n[0045]如图1所示，现有MicroLED显示面板包括黄色聚酰亚胺层121、第一阻挡层122、黄色聚酰亚胺层123、第二阻挡层124、缓冲层131、有源层132、栅极绝缘层133、栅极层134、层间绝缘层135、源漏极层136、平坦化层137、像素电极层14、绝缘层15、MicroLED16和公共电极层17，在制备MicroLED显示面板时，会在黄色聚酰亚胺121下设置玻璃11，但在对薄膜晶体管进行制备时，由于需要采用高温制程，导致双层黄色聚酰亚胺出现翘曲，如图2所示，在制备过程中，在载台21上会出现玻璃基板22出现翘曲现象，导致在玻璃基板22的其他制程过程中，玻璃基板会出现破片风险，进而导致玻璃基板失效，且在采用激光剥离玻璃11时，如图3所示，双层黄色聚酰亚胺121容易出现卷曲，导致MicroLED显示面板不平整，且容易导致水氧入侵，同时，在激光剥离玻璃的过程中，底层的黄色聚酰亚胺容易出现碳化层，导致聚酰亚胺的柔性较差，所以，现有MicroLED显示面板存在黄色聚酰亚胺出现翘曲，导致MicroLED显示面板出现翘曲的技术问题。\n\n[0046]如图4所示，本申请实施例提供一种显示面板，该显示面板包括：\n\n[0047]牺牲层40；\n\n[0048]第一柔性层421，设置于所述牺牲层40上；\n\n[0049]第一阻挡层422，设置于所述第一柔性层421上；\n\n[0050]第二柔性层423，设置于所述第一阻挡层422上；\n\n[0051]第二阻挡层424，设置于所述第二柔性层423上；\n\n[0052]驱动电路层43，设置于所述第二阻挡层424上；\n\n[0053]微型发光二极管芯片46，设置于所述驱动电路层43上；\n\n[0054]其中，所述第一柔性层421与所述第二柔性层423的材料不同，且所述第一柔性层421与所述第二柔性层423的内应力方向相反。\n\n[0055]本申请实施例提供一种显示面板，该显示面板包括牺牲层、第一柔性层、第一阻挡层、第二柔性层、第二阻挡层和驱动电路层，所述第一柔性层设置于所述牺牲层上，所述第一阻挡层设置于所述第一柔性层上，所述第二柔性层设置于所述第一阻挡层上，所述第二阻挡层设置于所述第二柔性层上，所述驱动电路层设置于所述第二阻挡层上，所述微型发光二极管芯片设置于所述驱动电路层上，其中，所述第一柔性层与所述第二柔性层的材料不同，且所述第一柔性层与所述第二柔性层的内应力方向相反；通过将第一柔性层与第二柔性层的材料设置为不同，且使得第一柔性层和第二柔性层的内应力方向相反，使得在制备显示面板时，可以使得第一柔性层与第二柔性层的内应力相互抵消，从而使得第一柔性层和第二柔性层不出现翘曲，且第一柔性层和第二柔性层不出现卷曲，显示面板不出现翘曲，且牺牲层可以避免第一柔性层出现碳化的现象，解决了现有MicroLED显示面板存在黄色聚酰亚胺出现翘曲，导致MicroLED显示面板出现翘曲的技术问题。\n\n[0056]在一种实施例中，所述第一柔性层的材料为黄色聚酰亚胺，所述第二柔性层的材料为无色聚酰亚胺，针对现有MicroLED显示面板中第一柔性层和第二柔性层采用相同的黄色聚酰亚胺制备，导致MicroLED显示面板翘曲的问题，本申请考虑到无色聚酰亚胺的内应力与黄色聚酰亚胺的内应力的方向相反，如图5所示，仅具有无色聚酰亚胺的MicroLED显示面板52在载台51上的翘曲方向与具有双层黄色聚酰亚胺的MicroLED显示面板的翘曲方向相反，本申请实施例根据上述原理，将第一柔性层设置为黄色聚酰亚胺，将第二柔性层设置为无色聚酰亚胺，从而使得第一柔性层和第二柔性层的内应力相反，从而使得在制备显示面板中的薄膜晶体管时，显示面板中的第一柔性层和第二柔性层的内应力抵消，从而避免了第一柔性层和第二柔性层出现翘曲，避免了第一柔性层和第二柔性层出现卷曲，进而避免了显示面板出现翘曲。\n\n[0057]在一种实施例中，所述第一柔性层的材料为无色聚酰亚胺，所述第二柔性层的材料为黄色聚酰亚胺，即为了避免第一柔性层和第二柔性层翘曲，避免第一柔性层和第二柔性层出现卷曲，也可以使得第一柔性层为无色聚酰亚胺，第二柔性层为黄色聚酰亚胺，从而使得第一柔性层和第二柔性层的内应力抵消，从而避免显示面板出现翘曲。\n\n[0058]在一种实施例中，所述第一柔性层包括第一区域和第二区域，所述第一区域的材料为无色聚酰亚胺，所述第二区域的材料为黄色聚酰亚胺，所述第二柔性层包括第三区域和第四区域，所述第三区域与所述第一区域在第一阻挡层上的投影重合，所述第四区域与所述第二区域在第一阻挡层上的投影重合，所述第三区域的材料为黄色聚酰亚胺，所述第四区域的材料为无色聚酰亚胺，即在设置第一柔性层和第二柔性层时，在不影响第一柔性层和第二柔性层的完整性、柔性和与阻挡层形成的阻隔水氧的能力时，可以在第一柔性层上同时设置无色聚酰亚胺和黄色聚酰亚胺，相应的在第二柔性层上设置无色聚酰亚胺和黄色聚酰亚胺，从而使得第一柔性层与第二柔性层的内应力抵消，因此，本申请实施例对第一柔性层和第二柔性层的材料和设置方式不进行限制，在设置第一柔性层和第二柔性层时，还可以将第一柔性层和第二柔性层设置为交叉设置的无色聚酰亚胺和黄色聚酰亚胺。\n\n[0059]在一种实施例中，所述第一柔性层的厚度大于或者等于所述第二柔性层的厚度，在设置第一柔性层和第二柔性层的厚度时，可以使得第一柔性层的厚度大于或者等于所述第二柔性层的厚度，考虑到第一柔性层设置在下方，可以使得第一柔性层的厚度较大，从而避免第一柔性层损伤后暴露第一阻挡层，同时，第一柔性层可以提高显示面板的柔性，同时，在考虑到第一柔性层和第二柔性层的内应力时，将第一柔性层与第二柔性层的厚度设置为相同，可以使得第一柔性层与第二柔性层的内应力相同，从而相互抵消，在实际过程中，考虑到其他膜层也会存在内应力，可以使得第一柔性层和第二柔性层的厚度不同，即第一柔性层的厚度可以大于第二柔性层的厚度，或者第一柔性层的厚度小于第二柔性层的厚度，从而使得显示面板的内应力抵消，显示面板不出现翘曲。\n\n[0060]在一种实施例中，所述牺牲层的材料包括氧化硅、氮化硅、非晶硅、氧化铟锡中的一种，在为了激光剥离玻璃时，激光会对第一柔性层产生损伤，可以在第一柔性层下采用氧化硅、氮化硅、非晶硅、氧化铟锡等材料制备牺牲层，从而使得牺牲层在激光剥离玻璃时，可以对第一柔性层进行保护，从而避免第一柔性层出现卷曲或者碳化，且即使在激光剥离玻璃时，激光对牺牲层产生损伤，由于牺牲层的损伤不会对显示面板产生影响，因此能够使得显示面板正常工作，且在牺牲层未被损伤时，由于牺牲层采用无机材料，使得牺牲层可以阻隔水氧，提高显示面板的阻隔水氧的能力。\n\n[0061]在一种实施例中，所述牺牲层的材料包括有机材料，在设置牺牲层时，为了尽量避免牺牲层对显示面板的柔性产生影响，可以采用有机材料形成牺牲层。\n\n[0062]在一种实施例中，所述牺牲层的厚度范围为所述第一柔性层的厚度的十分之一至五分之一，考虑到牺牲层可能会影响显示面板的厚度，可以将牺牲层的厚度设计的较薄，例如牺牲层的厚度为第一柔性层的厚度的八分之一，从而使得牺牲层在激光剥离玻璃时，牺牲层可以尽量被剥离，从而避免牺牲层保留在显示面板上，但在设置牺牲层的厚度时，要保证牺牲层可以对第一柔性层进行保护，从而避免第一柔性层出现损伤。\n\n[0063]在一种实施例中，如图4所示，所述牺牲层40与所述第一柔性层421之间设有阻隔层41，通过在牺牲层和第一柔性层之间设置阻隔层，使得即使牺牲层破损，也还有阻隔层对第一柔性层进行保护，从而避免第一柔性层在激光剥离玻璃时受到损伤，且阻隔层能够增加第一柔性层的粘附力，避免第一柔性层脱落。\n\n[0064]在一种实施例中，所述阻隔层的厚度范围为所述第一柔性层的厚度的十分之一至五分之一，在设置阻隔层时，为了避免显示面板的厚度较大，可以使得阻隔层的厚度较小，例如阻隔层的厚度为第一柔性层的厚度的十分之一，从而使得阻隔层保护第一柔性层，同时，阻隔层的厚度不会较大，对显示面板的厚度影响较小。\n\n[0065]在一种实施例中，所述阻隔层的材料包括二氧化硅、氮化硅中的至少一种，在设置阻隔层的材料时，可以采用二氧化硅制备阻隔层，从而使得二氧化硅对第一柔性层进行保护的同时，二氧化硅对水氧进行阻隔，提高了显示面板的阻隔水氧的能力。\n\n[0066]在一种实施例中，所述第一阻挡层的材料包括氧化硅、氮化硅中的至少一种，即在设置第一阻挡层时，可以使得第一阻挡层的材料为氧化硅、或者使得第一阻挡层的材料为氮化硅、或者使得第一阻挡层为氧化硅和氮化硅的叠层，从而对水氧进行隔绝。\n\n[0067]在一种实施例中，所述第二阻挡层的材料包括氧化硅、氮化硅中的至少一种，即在设置第二阻挡层时，可以使得第二阻挡层的材料为氧化硅、或者使得第二阻挡层的材料为氮化硅、或者使得第二阻挡层为氧化硅和氮化硅的叠层，从而对水氧进行隔绝，在使用第一柔性层、第一阻挡层、第二柔性层和第二阻挡层的结构对水氧进行隔绝，避免水氧入侵时，第一阻挡层和第二阻挡层采用无机材料，第一阻挡层和第二阻挡层可以采用相同的材料，也可以采用不同材料，从而对配合第二柔性层对水氧进行隔绝，且第一柔性层和第二柔性层可以提高显示面板的柔性，提高显示面板的弯曲能力。\n\n[0068]在一种实施例中，如图4所示，所述驱动电路层43包括缓冲层431、设置于所述缓冲层431上的有源层432、设置于所述有源层432上的栅极绝缘层433、设置于所述栅极绝缘层433上的栅极层434、设置于所述栅极层434上的层间绝缘层435、设置于所述层间绝缘层435上的源漏极层436，设置于所述源漏极层436上的平坦化层437，即在本申请实施例中的显示面板中，驱动电路层可以由具有一层栅极层的薄膜晶体管组成，驱动电路层也可以由具有两层栅极层的薄膜晶体管组成，薄膜晶体管可以为顶栅薄膜晶体管、也可以为底栅薄膜晶体管。\n\n[0069]在一种实施例中，所述第一柔性层设有凹槽，在为了避免柔性层的应力导致显示面板出现翘曲时，除了采用上述实施例中的第一柔性层和第二柔性层的应力抵消外，还可以通过在第一柔性层上设置凹槽，从而使得凹槽降低第一柔性层的内应力，从而避免第一柔性层的内应力过大导致第一柔性层翘曲，导致显示面板翘曲。\n\n[0070]在一种实施例中，所述第二柔性层设有凹槽，在为了避免柔性层的应力导致显示面板出现翘曲时，除了采用上述实施例中的第一柔性层和第二柔性层的应力抵消外，还可以通过在第二柔性层上设置凹槽，从而使得凹槽降低第二柔性层的内应力，从而避免第二柔性层的内应力过大导致第二柔性层翘曲，导致显示面板翘曲。\n\n[0071]在一种实施例中，所述第一柔性层和第二柔性层设有凹槽，通过在第一柔性层和第二柔性层中设置凹槽，降低第一柔性层和第二柔性层的内应力，同时，使得第一柔性层和第二柔性层的内应力抵消，从而避免显示面板出现翘曲。\n\n[0072]在一种实施例中，所述第一柔性层设有第一凹槽，所述第二柔性层设有第二凹槽，所述第一柔性层的材料为黄色聚酰亚胺，所述第二柔性层的材料为无色聚酰亚胺，所述第一凹槽内填充有无色聚酰亚胺，所述第二凹槽内填充有黄色聚酰亚胺，即在采用凹槽降低第一柔性层和第二柔性层的内应力的同时，通过采用在黄色聚酰亚胺中填充无色聚酰亚胺，在无色聚酰亚胺中填充黄色聚酰亚胺，从而使得第一柔性层和第二柔性层的内应力能够自身抵消一部分甚至完全抵消，然后第一柔性层与第二柔性层通过相反的内应力将内应力抵消，从而避免了显示面板翘曲。\n\n[0073]在一种实施例中，如图4所示，显示面板还包括像素电极层44、绝缘层45、公共电极层47，在微型发光二极管芯片与电极相连时，可以采用图4中将微型发光二极管芯片的两个电极分别设置在两端，然后分别与像素电极层和公共电极层连接，还可以将微型发光二极管芯片的两个电极设置在同一端，然后将像素电极层与公共电极层设置于所述微型发光二极管芯片的同一侧，从而使得微型发光二极管芯片的两个电极与像素电极层和公共电极层连接，从而实现微型发光二极管芯片的发光。\n\n[0074]如图6所示，本申请实施例提供一种显示装置，该显示装置包括显示面板和盖板61，所述显示面板包括：\n\n[0075]牺牲层40；\n\n[0076]第一柔性层421，设置于所述牺牲层40上；\n\n[0077]第一阻挡层422，设置于所述第一柔性层421上；\n\n[0078]第二柔性层423，设置于所述第一阻挡层422上；\n\n[0079]第二阻挡层424，设置于所述第二柔性层423上；\n\n[0080]驱动电路层43，设置于所述第二阻挡层424上；\n\n[0081]微型发光二极管芯片46，设置于所述驱动电路层43上；\n\n[0082]其中，所述第一柔性层421与所述第二柔性层423的材料不同，且所述第一柔性层421与所述第二柔性层423的内应力方向相反。\n\n[0083]本申请实施例提供一种显示装置，该显示装置包括显示面板和盖板，所述显示面板包括牺牲层、第一柔性层、第一阻挡层、第二柔性层、第二阻挡层和驱动电路层，所述第一柔性层设置于所述牺牲层上，所述第一阻挡层设置于所述第一柔性层上，所述第二柔性层设置于所述第一阻挡层上，所述第二阻挡层设置于所述第二柔性层上，所述驱动电路层设置于所述第二阻挡层上，所述微型发光二极管芯片设置于所述驱动电路层上，其中，所述第一柔性层与所述第二柔性层的材料不同，且所述第一柔性层与所述第二柔性层的内应力方向相反；通过将第一柔性层与第二柔性层的材料设置为不同，且使得第一柔性层和第二柔性层的内应力方向相反，使得在制备显示面板时，可以使得第一柔性层与第二柔性层的内应力相互抵消，从而使得第一柔性层和第二柔性层不出现翘曲，且第一柔性层和第二柔性层不出现卷曲，显示面板不出现翘曲，且牺牲层可以避免第一柔性层出现碳化的现象，解决了现有MicroLED显示面板存在黄色聚酰亚胺出现翘曲，导致MicroLED显示面板出现翘曲的技术问题。\n\n[0084]在一种实施例中，所述微型发光二极管芯片包括Micro-LED芯片和Mini-LED(迷你发光二极管)芯片。\n\n[0085]在一种实施例中，在显示装置中，所述第一柔性层的材料为黄色聚酰亚胺，所述第二柔性层的材料为无色聚酰亚胺。\n\n[0086]在一种实施例中，在显示装置中，所述第一柔性层的材料为无色聚酰亚胺，所述第二柔性层的材料为黄色聚酰亚胺。\n\n[0087]在一种实施例中，在显示装置中，所述第一柔性层的厚度大于或者等于所述第二柔性层的厚度。\n\n[0088]在一种实施例中，在显示装置中，所述牺牲层的材料包括氧化硅、氮化硅、非晶硅、氧化铟锡中的一种。\n\n[0089]在一种实施例中，在显示装置中，所述牺牲层的厚度范围为所述第一柔性层的厚度的十分之一至五分之一。\n\n[0090]在一种实施例中，在显示装置中，所述牺牲层与所述第一柔性层之间设有阻隔层。\n\n[0091]在一种实施例中，在显示装置中，所述阻隔层的厚度范围为所述第一柔性层的厚度的十分之一至五分之一。\n\n[0092]在一种实施例中，在显示装置中，所述阻隔层的材料包括二氧化硅。\n\n[0093]在一种实施例中，本申请实施例提供一种显示面板制备方法，该显示面板制备方法包括：\n\n[0094]提供玻璃基板；\n\n[0095]在玻璃基板上形成牺牲层；\n\n[0096]在牺牲层上形成阻隔层；\n\n[0097]在阻隔层上形成第一柔性层；\n\n[0098]在第一柔性层上形成第一阻挡层；\n\n[0099]在第一阻挡层上形成第二柔性层；所述第一柔性层与所述第二柔性层的材料不同，且所述第一柔性层与所述第二柔性层的内应力方向相反；\n\n[0100]在第二柔性层上形成第二阻挡层；\n\n[0101]在第二阻挡层上形成驱动电路层；\n\n[0102]在驱动电路层上形成微型发光二极管芯片；\n\n[0103]激光剥离玻璃基板。\n\n[0104]本申请实施例提供一种显示面板制备方法，通过在第一柔性层下设置牺牲层，使得在激光剥离玻璃基板时，激光仅会对牺牲层产生损伤，甚至不对牺牲层产生损失，从而保护了第一柔性层，同时，第一柔性层和第二柔性层的材料不同，第一柔性层和第二柔性层的内应力相反，使得第一柔性层与第二柔性层的内应力相互抵消，从而使得第一柔性层和第二柔性层不出现翘曲，且第一柔性层和第二柔性层不出现卷曲，显示面板不出现翘曲，解决了现有MicroLED显示面板存在黄色聚酰亚胺出现翘曲，导致MicroLED显示面板出现翘曲的技术问题。\n\n[0105]根据以上实施例可知：\n\n[0106]本申请实施例提供一种显示面板和显示装置，该显示面板包括牺牲层、第一柔性层、第一阻挡层、第二柔性层、第二阻挡层和驱动电路层，所述第一柔性层设置于所述牺牲层上，所述第一阻挡层设置于所述第一柔性层上，所述第二柔性层设置于所述第一阻挡层上，所述第二阻挡层设置于所述第二柔性层上，所述驱动电路层设置于所述第二阻挡层上，所述微型发光二极管芯片设置于所述驱动电路层上，其中，所述第一柔性层与所述第二柔性层的材料不同，且所述第一柔性层与所述第二柔性层的内应力方向相反；通过将第一柔性层与第二柔性层的材料设置为不同，且使得第一柔性层和第二柔性层的内应力方向相反，使得在制备显示面板时，可以使得第一柔性层与第二柔性层的内应力相互抵消，从而使得第一柔性层和第二柔性层不出现翘曲，且第一柔性层和第二柔性层不出现卷曲，显示面板不出现翘曲，且牺牲层可以避免第一柔性层出现碳化的现象，解决了现有MicroLED显示面板存在黄色聚酰亚胺出现翘曲，导致MicroLED显示面板出现翘曲的技术问题。\n\n[0107]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0108]以上对本申请实施例所提供的一种显示面板和显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10834, 23888, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种显示面板、显示装置。\n\n背景技术\n\n[0002]随着全面屏的普及和消费者对机身一体化的追求，屏下传感技术成为中小尺寸显示领域开发重点。由于LCD屏属于整面背光的被动发光，光学式传感器与光学显示无法在空间上重合，因此限制了LCD屏向全面屏的方向发展。\n\n[0003]而OLED屏则是采用逐颗的OLED像素主动发光，相较LCD屏而言一方面具有高对比、轻薄、可弯曲、可折叠等优势，另一方面，基于OLED屏无需背光的特性，可以很好的与现行的光学传感器兼容，因而面内光学传感技术已成为目前OLED屏的“独有优势”，从而可以使OLED屏在显示模式和成像模式间切换，并且无需现行LCD屏挖孔方案所造成的挖孔区无法显示。\n\n[0004]因此，在日益追求极致全面屏的当下，LCD屏的低成本优势显得岌岌可危，如何使LCD屏能够满足当下对全面屏的极致需求已成为目前亟待解决的问题。\n\n发明内容\n\n[0005]本申请提供一种显示面板、显示装置，能够解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。\n\n[0006]为解决上述问题，本申请提供的技术方案如下：\n\n[0007]本申请提供一种显示面板，包括第一像素区域和邻近所述第一像素区域的第二像素区域，所述显示面板包括相对设置的阵列基板和彩膜基板、位于所述阵列基板与所述彩膜基板之间的液晶层，以及背光模组，位于所述彩膜基板背向所述阵列基板的一侧；\n\n[0008]其中，所述显示面板包括设置在所述第一像素区域内的多个Micro LED发光单元，且多个所述Micro LED发光单元之间设有透光区；所述彩膜基板包括设置在所述第二像素区域的彩色色阻。\n\n[0009]在本申请的显示面板中，所述Micro LED发光单元包括电极面以及与电极面相对的基底面，所述电极面上设置有第一电极，所述Micro LED发光单元以电极面朝向所述背光模组一侧的方式设置，所述Micro LED发光单元的发光方向为由所述电极面指向所述基底面。\n\n[0010]在本申请的显示面板中，所述彩膜基板包括：\n\n[0011]第一基底；\n\n[0012]所述Micro LED发光单元，对应所述第一像素区域设置于所述第一基底上；\n\n[0013]所述彩色色阻，对应所述第二像素区域设于所述第一基底上；\n\n[0014]其中，所述第一基底对应所述第一像素区域设有与所述第一电极对应的第二电极。\n\n[0015]在本申请的显示面板中，所述Micro LED发光单元与所述彩色色阻位于所述第一基底背向所述背光模组的一侧，所述Micro LED发光单元的所述第一电极与对应的所述第二电极电连接。\n\n[0016]在本申请的显示面板中，所述Micro LED发光单元位于所述第一基底靠近所述背光模组的一侧，所述彩色色阻位于所述第一基底背向所述背光模组的一侧，所述Micro LED发光单元通过所述第一电极与对应的所述第二电极电连接。\n\n[0017]在本申请的显示面板中，所述第一电极由所述Micro LED发光单元的电极面沿所述Micro LED发光单元的侧面延伸至所述第一基底上对应所述第二电极的位置。\n\n[0018]在本申请的显示面板中，所述彩膜基板还包括第一驱动电路，所述第一驱动电路对应所述第一像素区域设于所述第一基底面向所述Micro LED发光单元的一侧表面，所述Micro LED发光单元与所述第一驱动电路电连接。\n\n[0019]在本申请的显示面板中，所述第一驱动电路包括沿横向延伸的扫描线和沿纵向延伸的数据线，相邻两所述扫描线与相邻两所述数据线界定出子像素区域，所述Micro LED发光单元在所述第一基底上的正投影面积小于所述子像素区域的面积。\n\n[0020]在本申请的显示面板中，所述Micro LED发光单元在所述第一基底上的正投影面积占所述子像素区域面积的10％-50％，所述Micro LED发光单元包括红色发光单元、绿色发光单元以及蓝色发光单元。\n\n[0021]在本申请的显示面板中，所述阵列基板包括：\n\n[0022]第二基底；\n\n[0023]所述Micro LED发光单元，对应所述第一像素区域设置于所述第二基底靠近所述彩膜基板的一侧；\n\n[0024]其中，所述第二基底对应所述第一像素区域设有与所述第一电极对应的第二电极，且所述第一电极与对应的所述第二电极电连接。\n\n[0025]在本申请的显示面板中，所述第一电极由所述Micro LED发光单元的电极面沿所述Micro LED发光单元的侧面延伸至所述第二基底上对应所述第二电极的位置。\n\n[0026]在本申请的显示面板中，所述阵列基板还包括第二驱动电路，所述第二驱动电路对应所述第二像素区域设置于所述第二基底上。\n\n[0027]本申请还提供一种显示装置，包括如上所述的显示面板。\n\n[0028]本申请的有益效果为：本申请提供的显示面板、显示装置，通过将Micro LED(微发光二极管)显示技术与LCD(液晶显示器)显示技术相结合，从而实现LCD极致全面屏显示；并充分利用Micro LED发光单元体积小、可提升面板透过性的优势实现屏内传感集成功能。本申请在显示上实现了Micro LED显示技术与LCD显示技术在横向与纵向空间的无缝衔接，从而解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。\n\n附图说明\n\n[0029]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0030]图1(a)-1(e)为本申请实施例提供的不同类型的显示面板的俯视图；\n\n[0031]图2为本申请实施例一提供的显示面板的截面示意图；\n\n[0032]图3为本申请实施例提供的显示面板具有Micro LED发光单元的示意图；\n\n[0033]图4为图2中A区域的局部示意图；\n\n[0034]图5为本申请实施例二提供的显示面板的结构示意图；\n\n[0035]图6为本申请实施例三提供的显示面板的结构示意图；\n\n[0036]图7为本申请提供的显示装置的结构示意图。\n\n具体实施方式\n\n[0037]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0038]在本申请的描述中，需要理解的是，术语“纵向”、“横向”、“长度”、“宽度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。在本申请中，“/”表示“或者”的意思。\n\n[0039]本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。\n\n[0040]在中小尺寸显示领域，全面屏技术成为当前的重点研发方向目前主流的显示技术包括液晶显示器(Liquid Crystal Display,LCD)和有机发光二极管(Organic Light-Emitting Diode,OLED)，其中LCD为被动发光技术，通过整面背光结构照射液晶盒实现光纤的亮暗控制，而OLED技术则是采用逐颗的OLED像素主动发光。因为相较而言具有高对比、轻薄、可弯曲、可折叠等优势，以及可以很好的与现行的光学指纹识别模组等兼容，因而面内光学传感技术已成为目前OLED屏的“独有优势”。而LCD屏的低成本优势显得岌岌可危。\n\n[0041]基于此，本申请的首要目的在于提供一种显示面板及显示装置，用以解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。\n\n[0042]另外，Micro LED(微发光二极管)相较于OLED技术具有相似的主动发光特性，同时由于无机LED本身的稳定性与高效率等特点，在技术上较OLED具有寿命长、亮度高、控制芯片(chip)尺寸小、响应时间长等优势。但是相较于传统面板技术通过刻蚀等“减法制造”方式，Micro LED主要依赖于巨量转移(mass-transfer)的“加法制造”方式，在技术成熟度上较低，特别是面临巨量显示画素转移时具有先天的制程良率与成本挑战的问题。\n\n[0043]基于此，本申请的另一目的在于提供一种显示面板及显示装置，以解决Micro LED应用于显示技术时由于巨量转移而导致制程良率低及成本高从而限制了Micro LED在显示技术上应用的问题。\n\n[0044]此外，由于Micro LED包括电极面和基底面，Micro LED的出光面可以为电极面，也可以为基底面。电极面通常设置有用于转印绑定的电极，但是当电极面作为出面面时，电极会遮挡一部分的光从而影响光效，从而导致Micro LED存在电极面发光光效相较于基底面发光光效低的问题。\n\n[0045]基于此，本申请的又一目的在于提供一种显示面板及显示装置，以解决Micro LED电极面发光光效较基底面发光光效低的问题。\n\n[0046]以下请结合具体实施例对本申请的显示面板及显示装置进行详细描述。\n\n[0047]请参照图1(a)-1(e)所示，为本申请实施例提供的不同类型的显示面板的俯视图。本申请的显示面板包括第一像素区域100和邻近所述第一像素区域100的第二像素区域200，其中，所述第一像素区域100为Micro LED显示区域，所述第二像素区域200为液晶显示区域。所述第一像素区域100与所述第二像素区域200无缝衔接，因而在视觉上没有任何显示中断及不连续边界，因此，可以实现完全的全面屏设计。又由于Micro LED具有高亮、长寿命特征，故可以采用所述第一像素区域100内的部分Micro LED发光单元兼做补光灯、指示灯等功能。\n\n[0048]请结合图1(a)-1(e)以及图2所示，本申请的显示面板包括：相对设置的彩膜基板3和阵列基板5、位于所述阵列基板5与所述彩膜基板3之间的液晶层4，以及背光模组1，所述背光模组1位于所述彩膜基板3背向所述阵列基板5的一侧。其中，所述显示面板包括设置在所述第一像素区域100内的多个MicroLED发光单元303，且多个所述Micro LED发光单元303之间设有透光区；所述彩膜基板1包括设置在所述第二像素区域200的彩色色阻305。\n\n[0049]由于本申请的彩膜基板采用微发光二极管显示技术与液晶显示技术相结合的形式，从而可以实现LCD极致全面屏显示。又由于彩膜基板在相邻两所述Micro LED发光单元之间设有透光区，所述透光区可以允许光线穿过，因此可以在所述第一像素区域100内实现屏内传感集成方案。另外，针对原本以电极面出光/发光的Micro LED发光单元，本申请通过在液晶盒的成盒制程中将彩膜基板与阵列基板倒置设置，使得原本以电极面出光/发光的Micro LED发光单元转变为基底面出光/发光，从而解决由于Micro LED电极面发光光效较基底面发光光效低而影响面板显示效果的问题。\n\n[0050]实施例一\n\n[0051]请参照图2所示，以下对本申请实施例一提供的显示面板进行详细说明。所述显示面板由下至上包括层叠的背光模组1、下偏光片2、彩膜基板3、液晶层4以及阵列基板5和上偏光片6。\n\n[0052]其中，所述彩膜基板3包括：第一基底301，所述第一基底301可以为透光率较高的玻璃基板，或是柔性基板；第一驱动电路302，所述第一驱动电路302对应所述第一像素区域100设于所述第一基底301靠近液晶层4的表面上，第一驱动电路302用于为Micro LED发光单元303提供驱动信号，以使所述Micro LED发光单元303能够发光；多个Micro LED发光单元303对应所述第一像素区域100设置于所述第一基底301靠近液晶层4的一侧，且所述Micro LED发光单元303与所述第一驱动电路302电连接；平坦层304设置于所述Micro LED发光单元303以及所述第一基底301上，所述平坦层304用于对形成有所述Micro LED发光单元303的所述基底表面进行平整化处理；彩色色阻305对应所述第二像素区域200设于所述平坦层304上，且相邻两所述彩色色阻305之间设置有黑色矩阵306；其中，所述彩色色阻305以及所述黑色矩阵306避开所述第一像素区域100设置；所述彩色色阻305与所述黑色矩阵306上还设置OC胶层307，所述OC胶层307可以平坦彩膜基板的表面。\n\n[0053]其中，所述第一驱动电路302包括沿横向延伸的扫描线(未图示)和沿纵向延伸的数据线(未图示)，相邻两所述扫描线与相邻两所述数据线界定出子像素区域。所述扫描线与所述数据线也可以延伸至所述第二像素区域200内，可以理解的是，为了不影响所述第二像素区域200内的像素显示，延伸至所述第二像素区域200内的所述扫描线以及所述数据线的部分避开所述彩色色阻305设置，即可以对应位于所述黑色矩阵306的位置。\n\n[0054]在一种实施例中，所述第一驱动电路302可以采用主动阵列(AM)驱动技术，即所述第一驱动电路302还包括薄膜晶体管(未图示)，每一所述Micro LED发光单元303通过对应的所述薄膜晶体管分别与对应的所述扫描线和对应的所述数据线电连接。\n\n[0055]在本实施例中，为优先保证所述第一像素区域100的穿透率，所述第一驱动电路302采用被动阵列(PM)驱动技术，即所述第一驱动电路302不设置薄膜晶体管。\n\n[0056]在本实施例中，所述Micro LED发光单元303为三色显示，即所述Micro LED发光单元303包括红色发光单元、绿色发光单元以及蓝色发光单元。所述Micro LED发光单元303的尺寸为1μm-100μm，所述Micro LED发光单元303的高度为1μm-20μm。其中，所述Micro LED发光单元303可以为基底面出射结构或者电极面出射结构，此处不做限制。\n\n[0057]在另一种实施例中，所述Micro LED发光单元303采用蓝色显示结合色转换技术方案，也就是说，所述红色发光单元包括蓝色发光单元以及设于所述蓝色发光单元上的色转换层，该色转换层可将所述蓝色发光单元发出的蓝光转换为红光；所述绿色发光单元包括蓝色发光单元以及设于所述蓝色发光单元上的色转换层，该色转换层可将所述蓝色发光单元发出的蓝光转换为绿光。其中，所述色转换层为量子点膜或荧光粉等，此处不做特殊限定。\n\n[0058]结合图3所示，为本申请实施例提供的显示面板具有Micro LED发光单元的示意图。由于所述Micro LED发光单元303具有尺寸小的优势，因此所述Micro LED发光单元303在所述基底上的正投影面积小于所述子像素区域P的面积，使得多个所述Micro LED发光单元303之间具有透光区300。\n\n[0059]进一步的，所述Micro LED发光单元303在所述基底上的正投影面积占所述子像素区域P面积的10％-50％，以保证所述透光区300具有良好透光效果。\n\n[0060]在所述第一像素区域100可以实现正常显示的情况下，又由于各所述MicroLED发光单元303的覆盖面积皆小于各子像素区域P的面积，因此，在所述子像素区域P内无所述Micro LED发光单元303覆盖的区域光线可以正常透过。可以通过对所述Micro LED发光单元303关闭，使所述第一像素区域100采集外界图像进入屏下传感器。如此一来，便可实现屏下指纹识别、屏下摄像头、屏下面部识别、屏下距离感知等各种屏下传感方案。\n\n[0061]请结合图4所示，为图2中A区域的局部示意图。所述Micro LED发光单元303包括电极面303a以及与电极面303a相对的基底面303b，所述电极面303a上设置有第一电极3031。在本申请中，所述Micro LED发光单元303以电极面303a朝向所述背光模组1一侧的方式设置，所述Micro LED发光单元303的发光方向为由所述电极面303a指向所述基底面303b。\n\n[0062]其中，所述第一基底301对应所述第一像素区域100设有与所述第一电极3031对应的第二电极3032，所述第二电极3032对应位于所述子像素区域内。\n\n[0063]所述Micro LED发光单元303与所述彩色色阻305位于所述第一基底301背向所述背光模组1的一侧，所述Micro LED发光单元303的所述第一电极3031与对应的所述第二电极3032电连接，以此实现所述Micro LED发光单元303与所述第一驱动电路302的电连接。\n\n[0064]其中，所述第一电极3031包括一个N电极以及一个与N电极相对设置的P电极。所述第二电极3032包括一个N电极以及一个与N电极相对设置的P电极，在所述Micro LED发光单元303的转印工艺中，所述Micro LED发光单元303的N电极与所述第一基底301上的N电极电连接，所述Micro LED发光单元303的P电极与所述第一基底301上的P电极电连接。\n\n[0065]结合图4和图2所示，由于本实施例将彩膜基板3与阵列基板5倒置设置，因此，使得所述彩膜基板3上原本电极面发光的所述Micro LED发光单元303变换为基底面发光，因此有效避免了电极会遮挡一部分的光从而影响光效，进而解决了Micro LED的电极面发光光效相较于基底面发光光效低影响显示效果的问题。\n\n[0066]请参照图2所示，所述平坦层304整面的设置于所述第一像素区域100和所述第二像素区域200内，所述平坦层304的材料包括但不限于有机树脂、OC胶、硅胶等，所述平坦层304的材料具有良好的耐高温性能以及良好的粘着性和透光性。所述平坦层304的厚度为3μm-200μm，能够填平由于绑定所述Micro LED发光单元303而在基底上形成的段差。\n\n[0067]进一步的，由于所述Micro LED发光单元303的高度通常为1μm-20μm，为保证彩膜基板的轻薄化，同时兼顾平坦作用，所述平坦层304的厚度可以为3μm-100μm。为了不影响所述第一像素区域100的透光性能，所述平坦层304的透光率大于或等于70％。\n\n[0068]所述阵列基板5包括但不限于第二基底501以及设置于所述第二基底501面向所述液晶层4一侧的第二驱动电路502，所述第二驱动电路502设置于第二显示区域200内。由于对应显示面板的第一像素区域100内不设置所述第二驱动电路502，因此不会影响所述第一像素区域100的透光性。\n\n[0069]所述背光模组1以及所述下偏光片2在对应所述第一像素区域100的位置设置有开孔，即所述背光模组1以及所述下偏光片2避开所述第一像素区域100的位置设置。所述背光模组1为侧入式背光或者直下式背光，此处不做特殊限定。\n\n[0070]另外，由于本申请的彩膜基板只在所述第一像素区域100内设置所述Micro LED发光单元303，而所述第一像素区域100的面积占比较小，因此相较于大面积的巨量转移，本申请小面积的Micro LED发光单元巨量转移的成本以及修复成本会低很多。如此一来，即可以实现Micro LED显示技术在显示面板/显示装置上的应用，又可以解决巨量显示画素转移时制程良率较低以及成本较高的问题。\n\n[0071]实施例二\n\n[0072]如图5所示，为本申请实施例二提供的显示面板的结构示意图。本实施例的显示面板与上述实施例一的显示面板的结构相同/相似，本实施例与上述实施例一的区别仅在于：\n\n[0073]所述第一像素区域100内的所述Micro LED发光单元303位于所述第一基底301靠近所述背光模组1的一侧，所述第二像素区域200内的所述彩色色阻305位于所述第一基底301背向所述背光模组1的一侧。所述第一驱动电路302以及所述第二电极3032对应所述第一像素区域100设置于所述第一基底301靠近所述背光模组1的一侧。所述Micro LED发光单元303通过第一电极3031’与对应的所述第二电极3032电连接。其中，所述第一电极3031’由所述Micro LED发光单元303的电极面303a沿所述Micro LED发光单元303的侧面延伸至所述第一基底301上对应所述第二电极3032的位置。\n\n[0074]另外，所述Micro LED发光单元303的表面还覆盖有封装层308，所述封装层308用于起平坦作用和保护所述Micro LED发光单元303不受损伤的作用。\n\n[0075]由于本实施例将彩膜基板3与阵列基板5倒置设置，因此，使得所述彩膜基板3上原本电极面发光的所述Micro LED发光单元303变换为基底面发光，因此有效避免了电极会遮挡一部分的光从而影响光效，进而解决了Micro LED的电极面发光光效相较于基底面发光光效低影响显示效果的问题。\n\n[0076]实施例三\n\n[0077]如图6所示，为本申请实施例三提供的显示面板的结构示意图。本实施例的显示面板与上述实施例一的显示面板的结构的区别在于：本实施例将Micro LED发光单元303设置于阵列基板5对应第一像素区域100的位置上，所述彩膜基板3对应第一像素区域100的位置不设置Micro LED发光单元303，且所述阵列基板5上的Micro LED发光单元303的电极面303a面向所述彩膜基板3，使得Micro LED发光单元303以基底面303b发光。\n\n[0078]具体地，所述阵列基板5包括：第二基底501；所述Micro LED发光单元303对应所述第一像素区域100设置于所述第二基底501靠近所述彩膜基板3的一侧；第二驱动电路502对应所述第二像素区域200设置于所述第二基底501靠近所述彩膜基板3的一侧；其中，所述第二基底501对应所述第一像素区域100还设置有第二电极3032，第二电极3032对应位于第一像素区域100的子像素区内，所述Micro LED发光单元303的电极面303a通过第一电极3031’与对应的第二电极3032电连接。\n\n[0079]其中，所述第一电极3031’由所述Micro LED发光单元303的电极面303a沿所述Micro LED发光单元303的侧面延伸至所述第二基底501上对应所述第二电极3032的位置。\n\n[0080]本实施例的显示面板的其他结构与上述实施例一中显示面板的结构相同/相似，具体请参照上述实施例一中的描述，此处不再赘述。\n\n[0081]由于本实施例将彩膜基板3与阵列基板5倒置设置，因此，使得所述阵列基板5上原本电极面发光的所述Micro LED发光单元303变换为基底面发光，因此有效避免了电极会遮挡一部分的光从而影响光效，进而解决了Micro LED的电极面发光光效相较于基底面发光光效低影响显示效果的问题。\n\n[0082]本申请还提供一种显示装置，如图7所示，所述显示装置包括如上所述的显示面板，以及传感器组件7。所述显示面板的背光模组1对应第一像素区域100设有通孔，所述传感器组件7正对所述通孔设置。\n\n[0083]其中，所述传感器组件7为光学式传感器，可以实现面部识别、距离感应、指纹识别等，此处不做限制。\n\n[0084]综上，本申请提供的显示面板、显示装置，通过将Micro LED(微发光二极管)显示技术与LCD(液晶显示器)显示技术相结合，从而实现LCD极致全面屏显示；并充分利用MicroLED发光单元体积小、可提升面板透过性的优势实现屏内传感集成功能。本申请在显示上实现了Micro LED显示技术与LCD显示技术在横向与纵向空间的无缝衔接，从而解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。另外，针对原本以电极面出光/发光的Micro LED发光单元，本申请通过在液晶盒的成盒制程中将彩膜基板与阵列基板倒置设置，使得原本以电极面出光/发光的Micro LED发光单元转变为基底面出光/发光，从而解决由于Micro LED电极面发光光效较基底面发光光效低而影响面板显示效果的问题。\n\n[0085]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种显示面板、显示装置。\n\n背景技术\n\n[0002]随着全面屏的普及和消费者对机身一体化的追求，屏下传感技术成为中小尺寸显示领域开发重点。由于LCD屏属于整面背光的被动发光，光学式传感器与光学显示无法在空间上重合，因此限制了LCD屏向全面屏的方向发展。\n\n[0003]而OLED屏则是采用逐颗的OLED像素主动发光，相较LCD屏而言一方面具有高对比、轻薄、可弯曲、可折叠等优势，另一方面，基于OLED屏无需背光的特性，可以很好的与现行的光学传感器兼容，因而面内光学传感技术已成为目前OLED屏的“独有优势”，从而可以使OLED屏在显示模式和成像模式间切换，并且无需现行LCD屏挖孔方案所造成的挖孔区无法显示。\n\n[0004]因此，在日益追求极致全面屏的当下，LCD屏的低成本优势显得岌岌可危，如何使LCD屏能够满足当下对全面屏的极致需求已成为目前亟待解决的问题。\n\n发明内容\n\n[0005]本申请提供一种显示面板、显示装置，能够解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。\n\n[0006]为解决上述问题，本申请提供的技术方案如下：\n\n[0007]本申请提供一种显示面板，包括第一像素区域和邻近所述第一像素区域的第二像素区域，所述显示面板包括相对设置的阵列基板和彩膜基板、位于所述阵列基板与所述彩膜基板之间的液晶层，以及背光模组，位于所述彩膜基板背向所述阵列基板的一侧；\n\n[0008]其中，所述显示面板包括设置在所述第一像素区域内的多个Micro LED发光单元，且多个所述Micro LED发光单元之间设有透光区；所述彩膜基板包括设置在所述第二像素区域的彩色色阻。\n\n[0009]在本申请的显示面板中，所述Micro LED发光单元包括电极面以及与电极面相对的基底面，所述电极面上设置有第一电极，所述Micro LED发光单元以电极面朝向所述背光模组一侧的方式设置，所述Micro LED发光单元的发光方向为由所述电极面指向所述基底面。\n\n[0010]在本申请的显示面板中，所述彩膜基板包括：\n\n[0011]第一基底；\n\n[0012]所述Micro LED发光单元，对应所述第一像素区域设置于所述第一基底上；\n\n[0013]所述彩色色阻，对应所述第二像素区域设于所述第一基底上；\n\n[0014]其中，所述第一基底对应所述第一像素区域设有与所述第一电极对应的第二电极。\n\n[0015]在本申请的显示面板中，所述Micro LED发光单元与所述彩色色阻位于所述第一基底背向所述背光模组的一侧，所述Micro LED发光单元的所述第一电极与对应的所述第二电极电连接。\n\n[0016]在本申请的显示面板中，所述Micro LED发光单元位于所述第一基底靠近所述背光模组的一侧，所述彩色色阻位于所述第一基底背向所述背光模组的一侧，所述Micro LED发光单元通过所述第一电极与对应的所述第二电极电连接。\n\n[0017]在本申请的显示面板中，所述第一电极由所述Micro LED发光单元的电极面沿所述Micro LED发光单元的侧面延伸至所述第一基底上对应所述第二电极的位置。\n\n[0018]在本申请的显示面板中，所述彩膜基板还包括第一驱动电路，所述第一驱动电路对应所述第一像素区域设于所述第一基底面向所述Micro LED发光单元的一侧表面，所述Micro LED发光单元与所述第一驱动电路电连接。\n\n[0019]在本申请的显示面板中，所述第一驱动电路包括沿横向延伸的扫描线和沿纵向延伸的数据线，相邻两所述扫描线与相邻两所述数据线界定出子像素区域，所述Micro LED发光单元在所述第一基底上的正投影面积小于所述子像素区域的面积。\n\n[0020]在本申请的显示面板中，所述Micro LED发光单元在所述第一基底上的正投影面积占所述子像素区域面积的10％-50％，所述Micro LED发光单元包括红色发光单元、绿色发光单元以及蓝色发光单元。\n\n[0021]在本申请的显示面板中，所述阵列基板包括：\n\n[0022]第二基底；\n\n[0023]所述Micro LED发光单元，对应所述第一像素区域设置于所述第二基底靠近所述彩膜基板的一侧；\n\n[0024]其中，所述第二基底对应所述第一像素区域设有与所述第一电极对应的第二电极，且所述第一电极与对应的所述第二电极电连接。\n\n[0025]在本申请的显示面板中，所述第一电极由所述Micro LED发光单元的电极面沿所述Micro LED发光单元的侧面延伸至所述第二基底上对应所述第二电极的位置。\n\n[0026]在本申请的显示面板中，所述阵列基板还包括第二驱动电路，所述第二驱动电路对应所述第二像素区域设置于所述第二基底上。\n\n[0027]本申请还提供一种显示装置，包括如上所述的显示面板。\n\n[0028]本申请的有益效果为：本申请提供的显示面板、显示装置，通过将Micro LED(微发光二极管)显示技术与LCD(液晶显示器)显示技术相结合，从而实现LCD极致全面屏显示；并充分利用Micro LED发光单元体积小、可提升面板透过性的优势实现屏内传感集成功能。本申请在显示上实现了Micro LED显示技术与LCD显示技术在横向与纵向空间的无缝衔接，从而解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。\n\n附图说明\n\n[0029]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0030]图1(a)-1(e)为本申请实施例提供的不同类型的显示面板的俯视图；\n\n[0031]图2为本申请实施例一提供的显示面板的截面示意图；\n\n[0032]图3为本申请实施例提供的显示面板具有Micro LED发光单元的示意图；\n\n[0033]图4为图2中A区域的局部示意图；\n\n[0034]图5为本申请实施例二提供的显示面板的结构示意图；\n\n[0035]图6为本申请实施例三提供的显示面板的结构示意图；\n\n[0036]图7为本申请提供的显示装置的结构示意图。\n\n具体实施方式\n\n[0037]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0038]在本申请的描述中，需要理解的是，术语“纵向”、“横向”、“长度”、“宽度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。在本申请中，“/”表示“或者”的意思。\n\n[0039]本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。\n\n[0040]在中小尺寸显示领域，全面屏技术成为当前的重点研发方向目前主流的显示技术包括液晶显示器(Liquid Crystal Display,LCD)和有机发光二极管(Organic Light-Emitting Diode,OLED)，其中LCD为被动发光技术，通过整面背光结构照射液晶盒实现光纤的亮暗控制，而OLED技术则是采用逐颗的OLED像素主动发光。因为相较而言具有高对比、轻薄、可弯曲、可折叠等优势，以及可以很好的与现行的光学指纹识别模组等兼容，因而面内光学传感技术已成为目前OLED屏的“独有优势”。而LCD屏的低成本优势显得岌岌可危。\n\n[0041]基于此，本申请的首要目的在于提供一种显示面板及显示装置，用以解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。\n\n[0042]另外，Micro LED(微发光二极管)相较于OLED技术具有相似的主动发光特性，同时由于无机LED本身的稳定性与高效率等特点，在技术上较OLED具有寿命长、亮度高、控制芯片(chip)尺寸小、响应时间长等优势。但是相较于传统面板技术通过刻蚀等“减法制造”方式，Micro LED主要依赖于巨量转移(mass-transfer)的“加法制造”方式，在技术成熟度上较低，特别是面临巨量显示画素转移时具有先天的制程良率与成本挑战的问题。\n\n[0043]基于此，本申请的另一目的在于提供一种显示面板及显示装置，以解决Micro LED应用于显示技术时由于巨量转移而导致制程良率低及成本高从而限制了Micro LED在显示技术上应用的问题。\n\n[0044]此外，由于Micro LED包括电极面和基底面，Micro LED的出光面可以为电极面，也可以为基底面。电极面通常设置有用于转印绑定的电极，但是当电极面作为出面面时，电极会遮挡一部分的光从而影响光效，从而导致Micro LED存在电极面发光光效相较于基底面发光光效低的问题。\n\n[0045]基于此，本申请的又一目的在于提供一种显示面板及显示装置，以解决Micro LED电极面发光光效较基底面发光光效低的问题。\n\n[0046]以下请结合具体实施例对本申请的显示面板及显示装置进行详细描述。\n\n[0047]请参照图1(a)-1(e)所示，为本申请实施例提供的不同类型的显示面板的俯视图。本申请的显示面板包括第一像素区域100和邻近所述第一像素区域100的第二像素区域200，其中，所述第一像素区域100为Micro LED显示区域，所述第二像素区域200为液晶显示区域。所述第一像素区域100与所述第二像素区域200无缝衔接，因而在视觉上没有任何显示中断及不连续边界，因此，可以实现完全的全面屏设计。又由于Micro LED具有高亮、长寿命特征，故可以采用所述第一像素区域100内的部分Micro LED发光单元兼做补光灯、指示灯等功能。\n\n[0048]请结合图1(a)-1(e)以及图2所示，本申请的显示面板包括：相对设置的彩膜基板3和阵列基板5、位于所述阵列基板5与所述彩膜基板3之间的液晶层4，以及背光模组1，所述背光模组1位于所述彩膜基板3背向所述阵列基板5的一侧。其中，所述显示面板包括设置在所述第一像素区域100内的多个MicroLED发光单元303，且多个所述Micro LED发光单元303之间设有透光区；所述彩膜基板1包括设置在所述第二像素区域200的彩色色阻305。\n\n[0049]由于本申请的彩膜基板采用微发光二极管显示技术与液晶显示技术相结合的形式，从而可以实现LCD极致全面屏显示。又由于彩膜基板在相邻两所述Micro LED发光单元之间设有透光区，所述透光区可以允许光线穿过，因此可以在所述第一像素区域100内实现屏内传感集成方案。另外，针对原本以电极面出光/发光的Micro LED发光单元，本申请通过在液晶盒的成盒制程中将彩膜基板与阵列基板倒置设置，使得原本以电极面出光/发光的Micro LED发光单元转变为基底面出光/发光，从而解决由于Micro LED电极面发光光效较基底面发光光效低而影响面板显示效果的问题。\n\n[0050]实施例一\n\n[0051]请参照图2所示，以下对本申请实施例一提供的显示面板进行详细说明。所述显示面板由下至上包括层叠的背光模组1、下偏光片2、彩膜基板3、液晶层4以及阵列基板5和上偏光片6。\n\n[0052]其中，所述彩膜基板3包括：第一基底301，所述第一基底301可以为透光率较高的玻璃基板，或是柔性基板；第一驱动电路302，所述第一驱动电路302对应所述第一像素区域100设于所述第一基底301靠近液晶层4的表面上，第一驱动电路302用于为Micro LED发光单元303提供驱动信号，以使所述Micro LED发光单元303能够发光；多个Micro LED发光单元303对应所述第一像素区域100设置于所述第一基底301靠近液晶层4的一侧，且所述Micro LED发光单元303与所述第一驱动电路302电连接；平坦层304设置于所述Micro LED发光单元303以及所述第一基底301上，所述平坦层304用于对形成有所述Micro LED发光单元303的所述基底表面进行平整化处理；彩色色阻305对应所述第二像素区域200设于所述平坦层304上，且相邻两所述彩色色阻305之间设置有黑色矩阵306；其中，所述彩色色阻305以及所述黑色矩阵306避开所述第一像素区域100设置；所述彩色色阻305与所述黑色矩阵306上还设置OC胶层307，所述OC胶层307可以平坦彩膜基板的表面。\n\n[0053]其中，所述第一驱动电路302包括沿横向延伸的扫描线(未图示)和沿纵向延伸的数据线(未图示)，相邻两所述扫描线与相邻两所述数据线界定出子像素区域。所述扫描线与所述数据线也可以延伸至所述第二像素区域200内，可以理解的是，为了不影响所述第二像素区域200内的像素显示，延伸至所述第二像素区域200内的所述扫描线以及所述数据线的部分避开所述彩色色阻305设置，即可以对应位于所述黑色矩阵306的位置。\n\n[0054]在一种实施例中，所述第一驱动电路302可以采用主动阵列(AM)驱动技术，即所述第一驱动电路302还包括薄膜晶体管(未图示)，每一所述Micro LED发光单元303通过对应的所述薄膜晶体管分别与对应的所述扫描线和对应的所述数据线电连接。\n\n[0055]在本实施例中，为优先保证所述第一像素区域100的穿透率，所述第一驱动电路302采用被动阵列(PM)驱动技术，即所述第一驱动电路302不设置薄膜晶体管。\n\n[0056]在本实施例中，所述Micro LED发光单元303为三色显示，即所述Micro LED发光单元303包括红色发光单元、绿色发光单元以及蓝色发光单元。所述Micro LED发光单元303的尺寸为1μm-100μm，所述Micro LED发光单元303的高度为1μm-20μm。其中，所述Micro LED发光单元303可以为基底面出射结构或者电极面出射结构，此处不做限制。\n\n[0057]在另一种实施例中，所述Micro LED发光单元303采用蓝色显示结合色转换技术方案，也就是说，所述红色发光单元包括蓝色发光单元以及设于所述蓝色发光单元上的色转换层，该色转换层可将所述蓝色发光单元发出的蓝光转换为红光；所述绿色发光单元包括蓝色发光单元以及设于所述蓝色发光单元上的色转换层，该色转换层可将所述蓝色发光单元发出的蓝光转换为绿光。其中，所述色转换层为量子点膜或荧光粉等，此处不做特殊限定。\n\n[0058]结合图3所示，为本申请实施例提供的显示面板具有Micro LED发光单元的示意图。由于所述Micro LED发光单元303具有尺寸小的优势，因此所述Micro LED发光单元303在所述基底上的正投影面积小于所述子像素区域P的面积，使得多个所述Micro LED发光单元303之间具有透光区300。\n\n[0059]进一步的，所述Micro LED发光单元303在所述基底上的正投影面积占所述子像素区域P面积的10％-50％，以保证所述透光区300具有良好透光效果。\n\n[0060]在所述第一像素区域100可以实现正常显示的情况下，又由于各所述MicroLED发光单元303的覆盖面积皆小于各子像素区域P的面积，因此，在所述子像素区域P内无所述Micro LED发光单元303覆盖的区域光线可以正常透过。可以通过对所述Micro LED发光单元303关闭，使所述第一像素区域100采集外界图像进入屏下传感器。如此一来，便可实现屏下指纹识别、屏下摄像头、屏下面部识别、屏下距离感知等各种屏下传感方案。\n\n[0061]请结合图4所示，为图2中A区域的局部示意图。所述Micro LED发光单元303包括电极面303a以及与电极面303a相对的基底面303b，所述电极面303a上设置有第一电极3031。在本申请中，所述Micro LED发光单元303以电极面303a朝向所述背光模组1一侧的方式设置，所述Micro LED发光单元303的发光方向为由所述电极面303a指向所述基底面303b。\n\n[0062]其中，所述第一基底301对应所述第一像素区域100设有与所述第一电极3031对应的第二电极3032，所述第二电极3032对应位于所述子像素区域内。\n\n[0063]所述Micro LED发光单元303与所述彩色色阻305位于所述第一基底301背向所述背光模组1的一侧，所述Micro LED发光单元303的所述第一电极3031与对应的所述第二电极3032电连接，以此实现所述Micro LED发光单元303与所述第一驱动电路302的电连接。\n\n[0064]其中，所述第一电极3031包括一个N电极以及一个与N电极相对设置的P电极。所述第二电极3032包括一个N电极以及一个与N电极相对设置的P电极，在所述Micro LED发光单元303的转印工艺中，所述Micro LED发光单元303的N电极与所述第一基底301上的N电极电连接，所述Micro LED发光单元303的P电极与所述第一基底301上的P电极电连接。\n\n[0065]结合图4和图2所示，由于本实施例将彩膜基板3与阵列基板5倒置设置，因此，使得所述彩膜基板3上原本电极面发光的所述Micro LED发光单元303变换为基底面发光，因此有效避免了电极会遮挡一部分的光从而影响光效，进而解决了Micro LED的电极面发光光效相较于基底面发光光效低影响显示效果的问题。\n\n[0066]请参照图2所示，所述平坦层304整面的设置于所述第一像素区域100和所述第二像素区域200内，所述平坦层304的材料包括但不限于有机树脂、OC胶、硅胶等，所述平坦层304的材料具有良好的耐高温性能以及良好的粘着性和透光性。所述平坦层304的厚度为3μm-200μm，能够填平由于绑定所述Micro LED发光单元303而在基底上形成的段差。\n\n[0067]进一步的，由于所述Micro LED发光单元303的高度通常为1μm-20μm，为保证彩膜基板的轻薄化，同时兼顾平坦作用，所述平坦层304的厚度可以为3μm-100μm。为了不影响所述第一像素区域100的透光性能，所述平坦层304的透光率大于或等于70％。\n\n[0068]所述阵列基板5包括但不限于第二基底501以及设置于所述第二基底501面向所述液晶层4一侧的第二驱动电路502，所述第二驱动电路502设置于第二显示区域200内。由于对应显示面板的第一像素区域100内不设置所述第二驱动电路502，因此不会影响所述第一像素区域100的透光性。\n\n[0069]所述背光模组1以及所述下偏光片2在对应所述第一像素区域100的位置设置有开孔，即所述背光模组1以及所述下偏光片2避开所述第一像素区域100的位置设置。所述背光模组1为侧入式背光或者直下式背光，此处不做特殊限定。\n\n[0070]另外，由于本申请的彩膜基板只在所述第一像素区域100内设置所述Micro LED发光单元303，而所述第一像素区域100的面积占比较小，因此相较于大面积的巨量转移，本申请小面积的Micro LED发光单元巨量转移的成本以及修复成本会低很多。如此一来，即可以实现Micro LED显示技术在显示面板/显示装置上的应用，又可以解决巨量显示画素转移时制程良率较低以及成本较高的问题。\n\n[0071]实施例二\n\n[0072]如图5所示，为本申请实施例二提供的显示面板的结构示意图。本实施例的显示面板与上述实施例一的显示面板的结构相同/相似，本实施例与上述实施例一的区别仅在于：\n\n[0073]所述第一像素区域100内的所述Micro LED发光单元303位于所述第一基底301靠近所述背光模组1的一侧，所述第二像素区域200内的所述彩色色阻305位于所述第一基底301背向所述背光模组1的一侧。所述第一驱动电路302以及所述第二电极3032对应所述第一像素区域100设置于所述第一基底301靠近所述背光模组1的一侧。所述Micro LED发光单元303通过第一电极3031’与对应的所述第二电极3032电连接。其中，所述第一电极3031’由所述Micro LED发光单元303的电极面303a沿所述Micro LED发光单元303的侧面延伸至所述第一基底301上对应所述第二电极3032的位置。\n\n[0074]另外，所述Micro LED发光单元303的表面还覆盖有封装层308，所述封装层308用于起平坦作用和保护所述Micro LED发光单元303不受损伤的作用。\n\n[0075]由于本实施例将彩膜基板3与阵列基板5倒置设置，因此，使得所述彩膜基板3上原本电极面发光的所述Micro LED发光单元303变换为基底面发光，因此有效避免了电极会遮挡一部分的光从而影响光效，进而解决了Micro LED的电极面发光光效相较于基底面发光光效低影响显示效果的问题。\n\n[0076]实施例三\n\n[0077]如图6所示，为本申请实施例三提供的显示面板的结构示意图。本实施例的显示面板与上述实施例一的显示面板的结构的区别在于：本实施例将Micro LED发光单元303设置于阵列基板5对应第一像素区域100的位置上，所述彩膜基板3对应第一像素区域100的位置不设置Micro LED发光单元303，且所述阵列基板5上的Micro LED发光单元303的电极面303a面向所述彩膜基板3，使得Micro LED发光单元303以基底面303b发光。\n\n[0078]具体地，所述阵列基板5包括：第二基底501；所述Micro LED发光单元303对应所述第一像素区域100设置于所述第二基底501靠近所述彩膜基板3的一侧；第二驱动电路502对应所述第二像素区域200设置于所述第二基底501靠近所述彩膜基板3的一侧；其中，所述第二基底501对应所述第一像素区域100还设置有第二电极3032，第二电极3032对应位于第一像素区域100的子像素区内，所述Micro LED发光单元303的电极面303a通过第一电极3031’与对应的第二电极3032电连接。\n\n[0079]其中，所述第一电极3031’由所述Micro LED发光单元303的电极面303a沿所述Micro LED发光单元303的侧面延伸至所述第二基底501上对应所述第二电极3032的位置。\n\n[0080]本实施例的显示面板的其他结构与上述实施例一中显示面板的结构相同/相似，具体请参照上述实施例一中的描述，此处不再赘述。\n\n[0081]由于本实施例将彩膜基板3与阵列基板5倒置设置，因此，使得所述阵列基板5上原本电极面发光的所述Micro LED发光单元303变换为基底面发光，因此有效避免了电极会遮挡一部分的光从而影响光效，进而解决了Micro LED的电极面发光光效相较于基底面发光光效低影响显示效果的问题。\n\n[0082]本申请还提供一种显示装置，如图7所示，所述显示装置包括如上所述的显示面板，以及传感器组件7。所述显示面板的背光模组1对应第一像素区域100设有通孔，所述传感器组件7正对所述通孔设置。\n\n[0083]其中，所述传感器组件7为光学式传感器，可以实现面部识别、距离感应、指纹识别等，此处不做限制。\n\n[0084]综上，本申请提供的显示面板、显示装置，通过将Micro LED(微发光二极管)显示技术与LCD(液晶显示器)显示技术相结合，从而实现LCD极致全面屏显示；并充分利用MicroLED发光单元体积小、可提升面板透过性的优势实现屏内传感集成功能。本申请在显示上实现了Micro LED显示技术与LCD显示技术在横向与纵向空间的无缝衔接，从而解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。另外，针对原本以电极面出光/发光的Micro LED发光单元，本申请通过在液晶盒的成盒制程中将彩膜基板与阵列基板倒置设置，使得原本以电极面出光/发光的Micro LED发光单元转变为基底面出光/发光，从而解决由于Micro LED电极面发光光效较基底面发光光效低而影响面板显示效果的问题。\n\n[0085]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10835, 23889, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种基于量子点的LED显示器及其制备方法。\n\n背景技术\n\n[0002]LED作为一共显示器，具有广泛的优点。例如色域高，亮度高，稳定性好等。拼接LED小间距行业发展迅速，市场份额逐年递增；量子点自发光技术可将蓝光转换成红/绿光，同时可在提升色域的基础上提升视角表现。Mini-LED同种规格芯片价格R>G>B，如完全使用LED实现全彩化则需进行三次转移，成本较高；如使用QDs转换价格最低的芯片B为红绿光，一则可降低材料成本，二则可降低制程难度。\n\n[0003]采用自主开发提升色域与视角表现的光转换技术方案，开发的主要方向主要是以替代彩色光阻的光转换油墨，搭配IJP制程，与Mini-LED相搭配的光转换显示技术。但是，这一技术目前存在串扰问题，例如，当显示彩色图像时，相邻的像素之间发出的光会发生串扰。\n\n发明内容\n\n[0004]本发明的目的在于，提供一种基于量子点的LED显示器及其制备方法，以解决现有的显示面板在实现彩色显示时，相邻的像素之间发出的光会发生串扰的技术问题。\n\n[0005]为实现上述目的，本发明提供一种基于量子点的LED显示器，包括：第一基板和第二基板，相对设置；若干光转换单元，相互间隔的分布在所述第一基板朝向所述第二基板的一面；若干Mini LED或Micro LED，相互间隔的分布在所述第二基板朝向所述第一基板的一面，每一光转换单元对应一所述Mini LED或Micro LED；第一遮光层，设于所述第一基板朝向所述第二基板的一面，所述第一遮光层用以间隔所述光转换单元；以及第二遮光层，设于所述第二基板朝向所述第一基板的一面，所述第二遮光层用以间隔所述Mini LED或MicroLED，所述第一遮光层的位置正对所述第二遮光层。\n\n[0006]进一步地，所述光转换单元包括：第一单元，具有红色量子点；第二单元，具有绿色量子点；以及第三单元，无量子点；所述Mini LED或Micro LED为蓝光LED。\n\n[0007]进一步地，所述的基于量子点的LED显示器还包括：\n\n[0008]若干介质单元，相互间隔的分布在所述光转换单元朝向所述第二基板的一面。\n\n[0009]进一步地，所述的基于量子点的LED显示器还包括多个显示单元，当一显示单元的Mini LED或Micro LED发出的光线发射至另一显示单元的介质单元下表面时，该光线被全反射至另一显示单元的Mini LED或Micro LED表面。\n\n[0010]进一步地，所述介质单元所用的材料为铟锡氧化物，其折射率为1.6-2。\n\n[0011]进一步地，所述介质单元所用的材料为硅氧化物、氮硅化合物，其折射率为1.5-1.95。\n\n[0012]进一步地，所述Mini LED或Micro LED包括：LED芯片，其位置正对所述光转换单元；以及LED衬底层，设于所述LED芯片上表面。\n\n[0013]为实现上述目的，本发还提供一种基于量子点的LED显示器的制备方法，包括如下步骤：\n\n[0014]提供一第一基板；\n\n[0015]设置若干光转换单元于所述第一基板上表面，所述光转换单元相互间隔的分布在所述第一基板上；\n\n[0016]形成第一遮光层于所述第一基板上表面，所述第一遮光层用以间隔所述光转换单元；\n\n[0017]提供一第二基板；\n\n[0018]设置若干Mini LED或Micro LED于所述第二基板上表面，所述Mini LED或MicroLED相互间隔的分布在所述第二基板上，且每一光转换单元对应一所述Mini LED或MicroLED；\n\n[0019]形成第二遮光层于所述第二基板上表面，所述第二遮光层用以间隔所述Mini LED或Micro LED；以及\n\n[0020]翻转所述第一基板，使得所述第一基板与所述第二基板相对设置，所述第一遮光层的位置正对所述第二遮光层。\n\n[0021]进一步地，所述形成第一遮光层于所述第一基板上表面的步骤之后，还包括：形成介质单元于所述光转换单元上，所述介质单元相互间隔的分布在所述光转换单元。\n\n[0022]进一步地，所述介质单元所用的材料为铟锡氧化物，其折射率为1.6-2；或者，所述介质单元所用的材料为硅氧化物、氮硅化合物，其折射率为1.5-1.95。\n\n[0023]本发明的技术效果在于，提供一种基于量子点的LED显示器及其制备方法，在上下基板侧均设置遮光层，其中，在下基板设置遮光层，用以遮蔽部分光线，防止光线从一显示单元折射到其他显示单元，并使得每一显示区的入光量是一致，从而保证LED显示器的屏幕任一位置的亮度保持一致，提高量子点的LED显示器的亮度均匀性；在上基板设置遮光层，用以减少相邻的显示单元的发生颜色串扰问题。\n\n[0024]进一步地，在上基板光转换单元的下表面设置介质单元，当一显示单元的MiniLED或Micro LED发出的光线发射至另一显示单元的介质单元下表面时，该光线被全反射至另一显示单元的Mini LED或Micro LED表面，可以进一步地防止相邻的显示单元的发生颜色串扰问题，并提高个显示单元的出光纯度。\n\n附图说明\n\n[0025]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0026]图1为本申请实施例1所述基于量子点的LED显示器的结构示意图。\n\n[0027]图2为本申请实施例1所述基于量子点的LED显示器的制备方法的流程图。\n\n[0028]图3为本申请实施例2所述第一基板与第二基板的间隙d的结构示意图。\n\n[0029]图4为本申请实施例2所述基于量子点的LED显示器的结构示意图。\n\n[0030]图5为本申请实施例2所述基于量子点的LED显示器的制备方法的流程图。\n\n[0031]附图部件标识如下：\n\n[0032]11红色显示单元；12绿色显示单元；13蓝色显示单元；\n\n[0033]101第一基板；102第一遮光层；103光转换单元；104介质单元；\n\n[0034]201第二基板；202第二遮光层；203Mini LED或Micro LED；\n\n[0035]1021第一遮光单元；2021第二遮光单元；\n\n[0036]2031LED芯片；2032LED衬底单元；\n\n[0037]103a第一单元；103b第二单元；103c第三单元。\n\n具体实施方式\n\n[0038]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0039]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0040]实施例1\n\n[0041]如图1所示，本实施例提供一种基于量子点的LED显示器，具有多个间隔设置的显示单元。所述显示单元包括红色显示单元11、绿色显示单元12以及蓝色显示单元13。每一显示单元包括第一基板101、第一遮光层102、光转换单元103、第二基板102、第二遮光层202以及Mini LED或Micro LED。其中，第一基板101与第二基板102相对设置。\n\n[0042]具体的，第二基板201为阵列基板，其从下至上依次包括PI层、缓冲层以及多个薄膜晶体管，其中每一薄膜晶体管包括有源层、栅极绝缘层、栅极、源漏电极等部件，在此不一一赘述。\n\n[0043]第二遮光层202包括两个第二遮光单元2021，且间隔设置于第二基板201上。第二遮光层202所用的材料为黑矩阵，具有遮光效果。\n\n[0044]Mini LED或Micro LED 203为蓝光，其包括LED芯片2031以及LED衬底单元2032。具体的，LED芯片2031相互间隔的分布第二基板201上表面，且设于相邻的两个第二遮光单元2021之间。LED芯片2031为蓝色(Blue)LED，其作为LED显示器的灯源。LED衬底单元2032设于LED芯片2031上表面。\n\n[0045]第一遮光层102包括两个第一遮光单元1021，其位置正对第二遮光单元2021，且设于第一基板101下表面。第一遮光层102所用的材料为黑矩阵，具有遮光效果。\n\n[0046]光转换单元103相互间隔的分布在第一基板101下表面，设于相邻第一遮光单元1021之间，其位置正对LED芯片2031。光转换单元103包括第一单元103a、第二单元103b以及第三单元103c。具体的，对应红色显示单元11位置处的光转换单元为第一单元103a，具有红色量子点R；对应绿色显示单元12位置处的光转换单元为第二单元103b，具有绿色量子点G；对应蓝色显示单元13位置光转换单元为第三单元103c，无量子点存在。\n\n[0047]本实施例中，在工作状态中，位于红色显示单元11的LED芯片2031发出蓝色的光，其中，一部分的光线直接照射到光转换单元103，利用红色量子点作为光转换材料，将蓝光转换为红光，实现红颜色的光转换输出，使得LED显示器的屏幕显示为红颜色；一部分的光线照射到LED芯片2031两侧设置第二遮光单元2021，第二遮光单元2021可以将这些光线吸收，有效减少红色显示单元11的光线进入其他显示单元(如绿色显示单元12，蓝色显示单元2)，使得每一显示区的入光量是一致，从而保证LED显示器的屏幕任一位置的亮度保持一致，提高量子点的LED显示器的亮度均匀性。进一步地，在光转换单元103的两侧设置第一遮光单元1021，用以减少相邻的显示单元的颜色串扰问题。简单地来说，在红色显示单元11实现的红颜色显示不会与其他显示单元的颜色发生串扰。\n\n[0048]同理，位于绿色显示单元12的LED芯片2031发出蓝色的光，其中，一部分的光线直接照射到光转换单元103，利用绿色量子点作为光转换材料，将蓝光转换为绿光，实现绿颜色的光转换输出，使得LED显示器的屏幕显示为绿颜色；一部分的光线照射到LED芯片2031两侧设置第二遮光单元2021，第二遮光单元2021可以将这些光线吸收，有效减少绿色显示单元12的光线进入其他显示单元(如红色显示单元11，蓝色显示单元2)，使得每一显示区的入光量是一致，从而保证LED显示器的屏幕任一位置的亮度保持一致，提高量子点的LED显示器的亮度均匀性。进一步地，在光转换单元103的两侧设置第一遮光单元1021，用以减少相邻的显示单元的颜色串扰问题。简单地来说，在绿色显示单元12实现的绿颜色显示不会与其他显示单元的颜色发生串扰。\n\n[0049]然而，位于蓝色显示单元2的LED芯片2031发出蓝色的光，其中，一部分的光线直接照射到第二基板20上，由于LED芯片2031发出的光为蓝色，因此，在LED芯片2031上方的光转换单元无需设置量子点，因此，在节省量子点材料的同时，也可以实现蓝颜色的光转换输出，使得LED显示器的屏幕显示为蓝颜色；一部分的光线照射到LED芯片2031两侧设置第二遮光单元2021，第二遮光单元2021可以将这些光线吸收，有效减少蓝色显示单元2的光线进入其他显示单元(如红色显示单元11，绿色显示单元12)，使得每一显示区的入光量是一致，从而保证LED显示器的屏幕任一位置的亮度保持一致，提高量子点的LED显示器的亮度均匀性。进一步地，在第二基板20的下表面设置第一遮光单元1021，即在与红色显示单元11对应的光转换单元103的两侧设置第一遮光单元1021以及在与绿色显示单元12对应的光转换单元103的两侧设置第一遮光单元1021，可以有效减少相邻的显示单元的颜色串扰问题。简单地来说，在蓝色显示单元2实现的蓝颜色显示不会与其他显示单元的颜色发生串扰。\n\n[0050]如图2所示，本实施例还提供一种基于量子点的LED显示器的制备方法，具有多个间隔设置的显示单元，包括如下步骤S11)-S17)。\n\n[0051]S11)提供一第一基板。\n\n[0052]S12)设置若干光转换单元于所述第一基板上表面，所述光转换单元相互间隔的分布在所述第一基板上。具体的，在所述第一基板沉积量子点材料形成光转换单元。\n\n[0053]S13)形成第一遮光层于所述第一基板上表面，所述第一遮光层用以间隔所述光转换单元。所述第一遮光层所用的材料为黑矩阵，具有遮光效果。\n\n[0054]S14)提供一第二基板。所述第二基板为阵列基板，其从下至上依次包括PI层、缓冲层以及多个薄膜晶体管，其中每一薄膜晶体管包括有源层、栅极绝缘层、栅极、源漏电极等部件，在此不一一赘述。\n\n[0055]S15)设置若干Mini LED或Micro LED于所述第二基板上表面，所述Mini LED或Micro LED相互间隔的分布在所述第二基板上，且每一光转换单元对应一所述Mini LED或Micro LED。其中，所述Mini LED或Micro LED包括LED芯片以及LED衬底单元。具体的，所述LED芯片为蓝色(Blue)LED，其作为LED显示器的灯源。所述LED衬底单元设于所述LED芯片上表面。\n\n[0056]S16)形成第二遮光层于所述第二基板上表面，所述第二遮光层用以间隔所述MiniLED或Micro LED。\n\n[0057]S17)翻转所述第一基板，使得所述第一基板与所述第二基板相对设置，所述第一遮光层的位置正对所述第二遮光层。具体的，位于所述红色显示单元的光转换单元与所述LED衬底单元相切，位于所述绿色显示单元的光转换单元也与所述LED衬底单元相切，位于所述蓝色显示单元的光转换单元为一空隙。\n\n[0058]本实施例提供一种基于量子点的LED显示器及其制备方法，在上下基板侧均设置遮光层，其中，在下基板设置遮光层，用以遮蔽部分光线，防止光线从一显示单元折射到其他显示单元，并使得每一显示区的入光量是一致，从而保证LED显示器的屏幕任一位置的亮度保持一致，提高量子点的LED显示器的亮度均匀性；在上基板设置遮光层，用以减少相邻的显示单元的发生颜色串扰问题。\n\n[0059]实施例2\n\n[0060]如图3所示，当第一基板101与第二基板102的最小间隙为d时，第一遮光层102无法与第二遮光层202相切，相邻的两个显示单元之间的部分光线会从一显示单元进入到另一显示单元，仍然会造成LED显示器颜色串扰的问题。进一步地，为了保证在第一基板101上打印量子点单元的特性，设置在第一基板101的第一遮光层102的黑色纯度不够导致遮光效果较差、吸光率较低引起光线透射，导致LED显示器颜色串扰的问题。\n\n[0061]为了解决上述问题，本实施例提供一种基于量子点的LED显示器及其制备方法，包括实施例1的全部技术方案，其中第二基板还包括介质单元。\n\n[0062]如图4所示，第二基板20还包括若干介质单元104，相互间隔的分布在光转换单元103的下表面。具体的，位于红色显示单元11的介质单元104与光转换单元103相切，位于绿色显示单元12的介质单元104与光转换单元103相切，位于蓝色显示单元13的介质单元104与第二基板20的下表面相切。\n\n[0063]本实施例中，介质单元104所用的材料包括铟锡氧化物、硅氧化物以及氮硅化合物，优选地，当介质单元104所用的材料为铟锡氧化物时，其折射率为1.6-2。当介质单元104所用的材料为硅氧化物、氮硅化合物时，其折射率为1.5-1.95。\n\n[0064]当一显示单元的Mini LED或Micro LED203发出的光线发射至另一显示单元的介质单元104下表面时，该光线被全反射至另一显示单元的Mini LED或Micro LED表面，从而避免入射光激发光转换单元103的量子点，防止相邻显示单元的像素颜色发生串扰。\n\n[0065]具体的，当红色显示单元11的Mini LED或Micro LED203发出的光线发射至绿色显示单元12或者蓝色显示单元12的介质单元104下表面时，该光线满足全反射的要求，且被反射至绿色显示单元12或者蓝色显示单元12的Mini LED或Micro LED203表面，保证红色显示单元11的Mini LED或Micro LED203发出的光不会激发绿色显示单元12的量子点，从而有效地解决了相邻显示单元颜色串扰问题，并提高各个显示单元的出光纯度。\n\n[0066]同理，当绿色显示单元12的Mini LED或Micro LED203发出的光线发射至红色显示单元11或者蓝色显示单元12的介质单元104下表面时，该光线满足全反射的要求，且被反射至红色显示单元11或者蓝色显示单元12的Mini LED或Micro LED203表面，保证绿色显示单元12的Mini LED或Micro LED203发出的光不会激发红色显示单元11或者蓝色显示单元12的量子点，从而有效地解决了相邻显示单元颜色串扰问题，并提高各个显示单元的出光纯度。\n\n[0067]进一步地，由于蓝色显示单元12的光转换单元103处无量子点，在第一基板101下表面设置介质单元104，可以防止蓝色显示单元12被其他显示单元的Mini LED或MicroLED203点亮。\n\n[0068]如图5所示，本实施例还提供一种基于量子点的LED显示器的制备方法，包括如下步骤S21)-S28)。\n\n[0069]S21)提供一第一基板。\n\n[0070]S22)设置若干光转换单元于所述第一基板上表面，所述光转换单元相互间隔的分布在所述第一基板上。\n\n[0071]S23)形成第一遮光层于所述第一基板上表面，所述第一遮光层用以间隔所述光转换单元。所述第一遮光层所用的材料为黑矩阵，具有遮光效果。\n\n[0072]S24)形成介质单元于所述光转换单元上，所述介质单元相互间隔的分布在所述光转换单元。所述介质单元所用的材料包括铟锡氧化物、硅氧化物以及氮硅化合物，优选地，当所述介质单元所用的材料为铟锡氧化物时，其折射率为1.6-2。当所述介质单元所用的材料为硅氧化物、氮硅化合物时，其折射率为1.5-1.95。\n\n[0073]S25)提供一第二基板。所述第二基板为阵列基板，其从下至上依次包括PI层、缓冲层以及多个薄膜晶体管，其中每一薄膜晶体管包括有源层、栅极绝缘层、栅极、源漏电极等部件，在此不一一赘述。\n\n[0074]S26)设置若干Mini LED或Micro LED于所述第二基板上表面，所述Mini LED或Micro LED相互间隔的分布在所述第二基板上，且每一光转换单元对应一所述Mini LED或Micro LED。其中，所述Mini LED或Micro LED包括LED芯片以及LED衬底单元。具体的，所述LED芯片为蓝色(Blue)LED，其作为LED显示器的灯源。\n\n[0075]S27)形成第二遮光层于所述第二基板上表面，所述第二遮光层用以间隔所述MiniLED或Micro LED。\n\n[0076]S28)翻转所述第一基板，使得所述第一基板与所述第二基板相对设置，所述第一遮光层的位置正对所述第二遮光层。具体的，位于所述红色显示单元的光转换单元与所述LED衬底单元相切，位于所述绿色显示单元的光转换单元也与所述LED衬底单元相切，位于所述蓝色显示单元的光转换单元为一空隙。\n\n[0077]本实施例提供一种基于量子点的LED显示器的制备方法，当一显示单元的MiniLED或Micro LED发出的光线发射至另一显示单元的所述介质单元下表面时，该光线被全反射至另一显示单元的Mini LED或Micro LED表面，从而避免入射光激发所述光转换单元的量子点，防止相邻显示单元的像素颜色发生串扰，并提高各个显示单元的出光纯度。\n\n[0078]本申请提供一种基于量子点的LED显示器及其制备方法，在上下基板侧均设置遮光层，其中，在下基板设置遮光层，用以遮蔽部分光线，防止光线从一显示单元折射到其他显示单元，并使得每一显示区的入光量是一致，从而保证LED显示器的屏幕任一位置的亮度保持一致，提高量子点的LED显示器的亮度均匀性；在上基板设置遮光层，用以减少相邻的显示单元的发生颜色串扰问题。\n\n[0079]进一步地，在上基板光转换单元的下表面设置介质单元，当一显示单元的MiniLED或Micro LED发出的光线发射至另一显示单元的介质单元下表面时，该光线被全反射至另一显示单元的Mini LED或Micro LED表面，可以进一步地防止相邻的显示单元的发生颜色串扰问题，并提高个显示单元的出光纯度。\n\n[0080]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0081]以上对本申请实施例所提供的一种基于量子点的LED显示器及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种基于量子点的LED显示器及其制备方法。\n\n背景技术\n\n[0002]LED作为一共显示器，具有广泛的优点。例如色域高，亮度高，稳定性好等。拼接LED小间距行业发展迅速，市场份额逐年递增；量子点自发光技术可将蓝光转换成红/绿光，同时可在提升色域的基础上提升视角表现。Mini-LED同种规格芯片价格R>G>B，如完全使用LED实现全彩化则需进行三次转移，成本较高；如使用QDs转换价格最低的芯片B为红绿光，一则可降低材料成本，二则可降低制程难度。\n\n[0003]采用自主开发提升色域与视角表现的光转换技术方案，开发的主要方向主要是以替代彩色光阻的光转换油墨，搭配IJP制程，与Mini-LED相搭配的光转换显示技术。但是，这一技术目前存在串扰问题，例如，当显示彩色图像时，相邻的像素之间发出的光会发生串扰。\n\n发明内容\n\n[0004]本发明的目的在于，提供一种基于量子点的LED显示器及其制备方法，以解决现有的显示面板在实现彩色显示时，相邻的像素之间发出的光会发生串扰的技术问题。\n\n[0005]为实现上述目的，本发明提供一种基于量子点的LED显示器，包括：第一基板和第二基板，相对设置；若干光转换单元，相互间隔的分布在所述第一基板朝向所述第二基板的一面；若干Mini LED或Micro LED，相互间隔的分布在所述第二基板朝向所述第一基板的一面，每一光转换单元对应一所述Mini LED或Micro LED；第一遮光层，设于所述第一基板朝向所述第二基板的一面，所述第一遮光层用以间隔所述光转换单元；以及第二遮光层，设于所述第二基板朝向所述第一基板的一面，所述第二遮光层用以间隔所述Mini LED或MicroLED，所述第一遮光层的位置正对所述第二遮光层。\n\n[0006]进一步地，所述光转换单元包括：第一单元，具有红色量子点；第二单元，具有绿色量子点；以及第三单元，无量子点；所述Mini LED或Micro LED为蓝光LED。\n\n[0007]进一步地，所述的基于量子点的LED显示器还包括：\n\n[0008]若干介质单元，相互间隔的分布在所述光转换单元朝向所述第二基板的一面。\n\n[0009]进一步地，所述的基于量子点的LED显示器还包括多个显示单元，当一显示单元的Mini LED或Micro LED发出的光线发射至另一显示单元的介质单元下表面时，该光线被全反射至另一显示单元的Mini LED或Micro LED表面。\n\n[0010]进一步地，所述介质单元所用的材料为铟锡氧化物，其折射率为1.6-2。\n\n[0011]进一步地，所述介质单元所用的材料为硅氧化物、氮硅化合物，其折射率为1.5-1.95。\n\n[0012]进一步地，所述Mini LED或Micro LED包括：LED芯片，其位置正对所述光转换单元；以及LED衬底层，设于所述LED芯片上表面。\n\n[0013]为实现上述目的，本发还提供一种基于量子点的LED显示器的制备方法，包括如下步骤：\n\n[0014]提供一第一基板；\n\n[0015]设置若干光转换单元于所述第一基板上表面，所述光转换单元相互间隔的分布在所述第一基板上；\n\n[0016]形成第一遮光层于所述第一基板上表面，所述第一遮光层用以间隔所述光转换单元；\n\n[0017]提供一第二基板；\n\n[0018]设置若干Mini LED或Micro LED于所述第二基板上表面，所述Mini LED或MicroLED相互间隔的分布在所述第二基板上，且每一光转换单元对应一所述Mini LED或MicroLED；\n\n[0019]形成第二遮光层于所述第二基板上表面，所述第二遮光层用以间隔所述Mini LED或Micro LED；以及\n\n[0020]翻转所述第一基板，使得所述第一基板与所述第二基板相对设置，所述第一遮光层的位置正对所述第二遮光层。\n\n[0021]进一步地，所述形成第一遮光层于所述第一基板上表面的步骤之后，还包括：形成介质单元于所述光转换单元上，所述介质单元相互间隔的分布在所述光转换单元。\n\n[0022]进一步地，所述介质单元所用的材料为铟锡氧化物，其折射率为1.6-2；或者，所述介质单元所用的材料为硅氧化物、氮硅化合物，其折射率为1.5-1.95。\n\n[0023]本发明的技术效果在于，提供一种基于量子点的LED显示器及其制备方法，在上下基板侧均设置遮光层，其中，在下基板设置遮光层，用以遮蔽部分光线，防止光线从一显示单元折射到其他显示单元，并使得每一显示区的入光量是一致，从而保证LED显示器的屏幕任一位置的亮度保持一致，提高量子点的LED显示器的亮度均匀性；在上基板设置遮光层，用以减少相邻的显示单元的发生颜色串扰问题。\n\n[0024]进一步地，在上基板光转换单元的下表面设置介质单元，当一显示单元的MiniLED或Micro LED发出的光线发射至另一显示单元的介质单元下表面时，该光线被全反射至另一显示单元的Mini LED或Micro LED表面，可以进一步地防止相邻的显示单元的发生颜色串扰问题，并提高个显示单元的出光纯度。\n\n附图说明\n\n[0025]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0026]图1为本申请实施例1所述基于量子点的LED显示器的结构示意图。\n\n[0027]图2为本申请实施例1所述基于量子点的LED显示器的制备方法的流程图。\n\n[0028]图3为本申请实施例2所述第一基板与第二基板的间隙d的结构示意图。\n\n[0029]图4为本申请实施例2所述基于量子点的LED显示器的结构示意图。\n\n[0030]图5为本申请实施例2所述基于量子点的LED显示器的制备方法的流程图。\n\n[0031]附图部件标识如下：\n\n[0032]11红色显示单元；12绿色显示单元；13蓝色显示单元；\n\n[0033]101第一基板；102第一遮光层；103光转换单元；104介质单元；\n\n[0034]201第二基板；202第二遮光层；203Mini LED或Micro LED；\n\n[0035]1021第一遮光单元；2021第二遮光单元；\n\n[0036]2031LED芯片；2032LED衬底单元；\n\n[0037]103a第一单元；103b第二单元；103c第三单元。\n\n具体实施方式\n\n[0038]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0039]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0040]实施例1\n\n[0041]如图1所示，本实施例提供一种基于量子点的LED显示器，具有多个间隔设置的显示单元。所述显示单元包括红色显示单元11、绿色显示单元12以及蓝色显示单元13。每一显示单元包括第一基板101、第一遮光层102、光转换单元103、第二基板102、第二遮光层202以及Mini LED或Micro LED。其中，第一基板101与第二基板102相对设置。\n\n[0042]具体的，第二基板201为阵列基板，其从下至上依次包括PI层、缓冲层以及多个薄膜晶体管，其中每一薄膜晶体管包括有源层、栅极绝缘层、栅极、源漏电极等部件，在此不一一赘述。\n\n[0043]第二遮光层202包括两个第二遮光单元2021，且间隔设置于第二基板201上。第二遮光层202所用的材料为黑矩阵，具有遮光效果。\n\n[0044]Mini LED或Micro LED 203为蓝光，其包括LED芯片2031以及LED衬底单元2032。具体的，LED芯片2031相互间隔的分布第二基板201上表面，且设于相邻的两个第二遮光单元2021之间。LED芯片2031为蓝色(Blue)LED，其作为LED显示器的灯源。LED衬底单元2032设于LED芯片2031上表面。\n\n[0045]第一遮光层102包括两个第一遮光单元1021，其位置正对第二遮光单元2021，且设于第一基板101下表面。第一遮光层102所用的材料为黑矩阵，具有遮光效果。\n\n[0046]光转换单元103相互间隔的分布在第一基板101下表面，设于相邻第一遮光单元1021之间，其位置正对LED芯片2031。光转换单元103包括第一单元103a、第二单元103b以及第三单元103c。具体的，对应红色显示单元11位置处的光转换单元为第一单元103a，具有红色量子点R；对应绿色显示单元12位置处的光转换单元为第二单元103b，具有绿色量子点G；对应蓝色显示单元13位置光转换单元为第三单元103c，无量子点存在。\n\n[0047]本实施例中，在工作状态中，位于红色显示单元11的LED芯片2031发出蓝色的光，其中，一部分的光线直接照射到光转换单元103，利用红色量子点作为光转换材料，将蓝光转换为红光，实现红颜色的光转换输出，使得LED显示器的屏幕显示为红颜色；一部分的光线照射到LED芯片2031两侧设置第二遮光单元2021，第二遮光单元2021可以将这些光线吸收，有效减少红色显示单元11的光线进入其他显示单元(如绿色显示单元12，蓝色显示单元2)，使得每一显示区的入光量是一致，从而保证LED显示器的屏幕任一位置的亮度保持一致，提高量子点的LED显示器的亮度均匀性。进一步地，在光转换单元103的两侧设置第一遮光单元1021，用以减少相邻的显示单元的颜色串扰问题。简单地来说，在红色显示单元11实现的红颜色显示不会与其他显示单元的颜色发生串扰。\n\n[0048]同理，位于绿色显示单元12的LED芯片2031发出蓝色的光，其中，一部分的光线直接照射到光转换单元103，利用绿色量子点作为光转换材料，将蓝光转换为绿光，实现绿颜色的光转换输出，使得LED显示器的屏幕显示为绿颜色；一部分的光线照射到LED芯片2031两侧设置第二遮光单元2021，第二遮光单元2021可以将这些光线吸收，有效减少绿色显示单元12的光线进入其他显示单元(如红色显示单元11，蓝色显示单元2)，使得每一显示区的入光量是一致，从而保证LED显示器的屏幕任一位置的亮度保持一致，提高量子点的LED显示器的亮度均匀性。进一步地，在光转换单元103的两侧设置第一遮光单元1021，用以减少相邻的显示单元的颜色串扰问题。简单地来说，在绿色显示单元12实现的绿颜色显示不会与其他显示单元的颜色发生串扰。\n\n[0049]然而，位于蓝色显示单元2的LED芯片2031发出蓝色的光，其中，一部分的光线直接照射到第二基板20上，由于LED芯片2031发出的光为蓝色，因此，在LED芯片2031上方的光转换单元无需设置量子点，因此，在节省量子点材料的同时，也可以实现蓝颜色的光转换输出，使得LED显示器的屏幕显示为蓝颜色；一部分的光线照射到LED芯片2031两侧设置第二遮光单元2021，第二遮光单元2021可以将这些光线吸收，有效减少蓝色显示单元2的光线进入其他显示单元(如红色显示单元11，绿色显示单元12)，使得每一显示区的入光量是一致，从而保证LED显示器的屏幕任一位置的亮度保持一致，提高量子点的LED显示器的亮度均匀性。进一步地，在第二基板20的下表面设置第一遮光单元1021，即在与红色显示单元11对应的光转换单元103的两侧设置第一遮光单元1021以及在与绿色显示单元12对应的光转换单元103的两侧设置第一遮光单元1021，可以有效减少相邻的显示单元的颜色串扰问题。简单地来说，在蓝色显示单元2实现的蓝颜色显示不会与其他显示单元的颜色发生串扰。\n\n[0050]如图2所示，本实施例还提供一种基于量子点的LED显示器的制备方法，具有多个间隔设置的显示单元，包括如下步骤S11)-S17)。\n\n[0051]S11)提供一第一基板。\n\n[0052]S12)设置若干光转换单元于所述第一基板上表面，所述光转换单元相互间隔的分布在所述第一基板上。具体的，在所述第一基板沉积量子点材料形成光转换单元。\n\n[0053]S13)形成第一遮光层于所述第一基板上表面，所述第一遮光层用以间隔所述光转换单元。所述第一遮光层所用的材料为黑矩阵，具有遮光效果。\n\n[0054]S14)提供一第二基板。所述第二基板为阵列基板，其从下至上依次包括PI层、缓冲层以及多个薄膜晶体管，其中每一薄膜晶体管包括有源层、栅极绝缘层、栅极、源漏电极等部件，在此不一一赘述。\n\n[0055]S15)设置若干Mini LED或Micro LED于所述第二基板上表面，所述Mini LED或Micro LED相互间隔的分布在所述第二基板上，且每一光转换单元对应一所述Mini LED或Micro LED。其中，所述Mini LED或Micro LED包括LED芯片以及LED衬底单元。具体的，所述LED芯片为蓝色(Blue)LED，其作为LED显示器的灯源。所述LED衬底单元设于所述LED芯片上表面。\n\n[0056]S16)形成第二遮光层于所述第二基板上表面，所述第二遮光层用以间隔所述MiniLED或Micro LED。\n\n[0057]S17)翻转所述第一基板，使得所述第一基板与所述第二基板相对设置，所述第一遮光层的位置正对所述第二遮光层。具体的，位于所述红色显示单元的光转换单元与所述LED衬底单元相切，位于所述绿色显示单元的光转换单元也与所述LED衬底单元相切，位于所述蓝色显示单元的光转换单元为一空隙。\n\n[0058]本实施例提供一种基于量子点的LED显示器及其制备方法，在上下基板侧均设置遮光层，其中，在下基板设置遮光层，用以遮蔽部分光线，防止光线从一显示单元折射到其他显示单元，并使得每一显示区的入光量是一致，从而保证LED显示器的屏幕任一位置的亮度保持一致，提高量子点的LED显示器的亮度均匀性；在上基板设置遮光层，用以减少相邻的显示单元的发生颜色串扰问题。\n\n[0059]实施例2\n\n[0060]如图3所示，当第一基板101与第二基板102的最小间隙为d时，第一遮光层102无法与第二遮光层202相切，相邻的两个显示单元之间的部分光线会从一显示单元进入到另一显示单元，仍然会造成LED显示器颜色串扰的问题。进一步地，为了保证在第一基板101上打印量子点单元的特性，设置在第一基板101的第一遮光层102的黑色纯度不够导致遮光效果较差、吸光率较低引起光线透射，导致LED显示器颜色串扰的问题。\n\n[0061]为了解决上述问题，本实施例提供一种基于量子点的LED显示器及其制备方法，包括实施例1的全部技术方案，其中第二基板还包括介质单元。\n\n[0062]如图4所示，第二基板20还包括若干介质单元104，相互间隔的分布在光转换单元103的下表面。具体的，位于红色显示单元11的介质单元104与光转换单元103相切，位于绿色显示单元12的介质单元104与光转换单元103相切，位于蓝色显示单元13的介质单元104与第二基板20的下表面相切。\n\n[0063]本实施例中，介质单元104所用的材料包括铟锡氧化物、硅氧化物以及氮硅化合物，优选地，当介质单元104所用的材料为铟锡氧化物时，其折射率为1.6-2。当介质单元104所用的材料为硅氧化物、氮硅化合物时，其折射率为1.5-1.95。\n\n[0064]当一显示单元的Mini LED或Micro LED203发出的光线发射至另一显示单元的介质单元104下表面时，该光线被全反射至另一显示单元的Mini LED或Micro LED表面，从而避免入射光激发光转换单元103的量子点，防止相邻显示单元的像素颜色发生串扰。\n\n[0065]具体的，当红色显示单元11的Mini LED或Micro LED203发出的光线发射至绿色显示单元12或者蓝色显示单元12的介质单元104下表面时，该光线满足全反射的要求，且被反射至绿色显示单元12或者蓝色显示单元12的Mini LED或Micro LED203表面，保证红色显示单元11的Mini LED或Micro LED203发出的光不会激发绿色显示单元12的量子点，从而有效地解决了相邻显示单元颜色串扰问题，并提高各个显示单元的出光纯度。\n\n[0066]同理，当绿色显示单元12的Mini LED或Micro LED203发出的光线发射至红色显示单元11或者蓝色显示单元12的介质单元104下表面时，该光线满足全反射的要求，且被反射至红色显示单元11或者蓝色显示单元12的Mini LED或Micro LED203表面，保证绿色显示单元12的Mini LED或Micro LED203发出的光不会激发红色显示单元11或者蓝色显示单元12的量子点，从而有效地解决了相邻显示单元颜色串扰问题，并提高各个显示单元的出光纯度。\n\n[0067]进一步地，由于蓝色显示单元12的光转换单元103处无量子点，在第一基板101下表面设置介质单元104，可以防止蓝色显示单元12被其他显示单元的Mini LED或MicroLED203点亮。\n\n[0068]如图5所示，本实施例还提供一种基于量子点的LED显示器的制备方法，包括如下步骤S21)-S28)。\n\n[0069]S21)提供一第一基板。\n\n[0070]S22)设置若干光转换单元于所述第一基板上表面，所述光转换单元相互间隔的分布在所述第一基板上。\n\n[0071]S23)形成第一遮光层于所述第一基板上表面，所述第一遮光层用以间隔所述光转换单元。所述第一遮光层所用的材料为黑矩阵，具有遮光效果。\n\n[0072]S24)形成介质单元于所述光转换单元上，所述介质单元相互间隔的分布在所述光转换单元。所述介质单元所用的材料包括铟锡氧化物、硅氧化物以及氮硅化合物，优选地，当所述介质单元所用的材料为铟锡氧化物时，其折射率为1.6-2。当所述介质单元所用的材料为硅氧化物、氮硅化合物时，其折射率为1.5-1.95。\n\n[0073]S25)提供一第二基板。所述第二基板为阵列基板，其从下至上依次包括PI层、缓冲层以及多个薄膜晶体管，其中每一薄膜晶体管包括有源层、栅极绝缘层、栅极、源漏电极等部件，在此不一一赘述。\n\n[0074]S26)设置若干Mini LED或Micro LED于所述第二基板上表面，所述Mini LED或Micro LED相互间隔的分布在所述第二基板上，且每一光转换单元对应一所述Mini LED或Micro LED。其中，所述Mini LED或Micro LED包括LED芯片以及LED衬底单元。具体的，所述LED芯片为蓝色(Blue)LED，其作为LED显示器的灯源。\n\n[0075]S27)形成第二遮光层于所述第二基板上表面，所述第二遮光层用以间隔所述MiniLED或Micro LED。\n\n[0076]S28)翻转所述第一基板，使得所述第一基板与所述第二基板相对设置，所述第一遮光层的位置正对所述第二遮光层。具体的，位于所述红色显示单元的光转换单元与所述LED衬底单元相切，位于所述绿色显示单元的光转换单元也与所述LED衬底单元相切，位于所述蓝色显示单元的光转换单元为一空隙。\n\n[0077]本实施例提供一种基于量子点的LED显示器的制备方法，当一显示单元的MiniLED或Micro LED发出的光线发射至另一显示单元的所述介质单元下表面时，该光线被全反射至另一显示单元的Mini LED或Micro LED表面，从而避免入射光激发所述光转换单元的量子点，防止相邻显示单元的像素颜色发生串扰，并提高各个显示单元的出光纯度。\n\n[0078]本申请提供一种基于量子点的LED显示器及其制备方法，在上下基板侧均设置遮光层，其中，在下基板设置遮光层，用以遮蔽部分光线，防止光线从一显示单元折射到其他显示单元，并使得每一显示区的入光量是一致，从而保证LED显示器的屏幕任一位置的亮度保持一致，提高量子点的LED显示器的亮度均匀性；在上基板设置遮光层，用以减少相邻的显示单元的发生颜色串扰问题。\n\n[0079]进一步地，在上基板光转换单元的下表面设置介质单元，当一显示单元的MiniLED或Micro LED发出的光线发射至另一显示单元的介质单元下表面时，该光线被全反射至另一显示单元的Mini LED或Micro LED表面，可以进一步地防止相邻的显示单元的发生颜色串扰问题，并提高个显示单元的出光纯度。\n\n[0080]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0081]以上对本申请实施例所提供的一种基于量子点的LED显示器及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10836, 23890, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种柔性Micro-LED显示面板及其制作方法。\n\n背景技术\n\n[0002]微发光二极管(Micro-Light Emitting Diode，Micro-LED)显示面板因兼具有机发光二极管显示面板(Organic Light-Emitting Diode，OLED)轻薄、可柔、抗摔、可折叠等优点，同时还具有寿命长、超低功耗、高响应速度、高透明度等优势，被视为下一代最具发展潜力的新型显示技术，非常符合未来的发展趋势。\n\n[0003]目前已有多家厂商研发的刚性Micro-LED显示面板展出，然而柔性Micro-LED显示面板却因技术上存在很多缺陷，离量产还有一段距离；柔性Micro-LED显示面板的主要难点体现在低良率上，主要表现在Micro-LED芯片巨量转移及容易发生断线等方面，从而导致成产成本较高。\n\n[0004]综上所述，需要提供一种新的柔性Micro-LED显示面板及其制作方法，来解决上述技术问题。\n\n发明内容\n\n[0005]本发明提供的柔性Micro-LED显示面板及其制作方法，解决了现有的Micro-LED显示面板不易弯折且容易发生断线，导致产品良率低的技术问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明实施例提供一种柔性Micro-LED显示面板，包括：\n\n[0008]阵列基板，包括第一衬底基板以及设置于所述第一衬底基板上的薄膜晶体管阵列层；\n\n[0009]第一连接电极层，设置于所述薄膜晶体管阵列层上，并与所述薄膜晶体管阵列层电连接；\n\n[0010]第二连接电极层，设置于所述第一连接电极层上；\n\n[0011]多个Micro-LED芯片，设置于所述第二连接电极层上，所述Micro-LED芯片经由所述第一连接电极层和所述第二连接电极层连接至所述薄膜晶体管阵列层；\n\n[0012]柔性封装层，覆盖所述Micro-LED芯片；以及\n\n[0013]第二衬底基板，设置于所述柔性封装层上；\n\n[0014]其中，所述第一衬底基板和所述第二衬底基板均为柔性基板，所述第二衬底基板用于控制所述柔性显示面板的中性层位于所述薄膜晶体管阵列层上。\n\n[0015]在本发明实施例提供的柔性Micro-LED显示面板中，所述第一衬底基板和所述第二衬底基板所采用的材料为CPI。\n\n[0016]在本发明实施例提供的柔性Micro-LED显示面板中，所述阵列基板还包括：\n\n[0017]阻隔层，设置于所述第一衬底基板上；\n\n[0018]遮光层，设置于所述阻隔层上；\n\n[0019]缓冲层，覆盖所述遮光层和所述阻隔层；\n\n[0020]有源层，设置于所述缓冲层上，所述遮光层和所述有源层相对设置；\n\n[0021]栅极绝缘层，设置于所述有源层上；\n\n[0022]栅极层，设置于所述栅极绝缘层上；\n\n[0023]层间介质层，覆盖所述栅极层、所述有源层及所述缓冲层上；\n\n[0024]源极和漏极，设置于所述层间介质层上，所述源极和所述漏极连接至所述有源层；\n\n[0025]钝化层，覆盖所述源极、所述漏极及所述层间介质层，所述第一连接电极设置于所述钝化层上；以及\n\n[0026]黑矩阵层，设置于相邻两个所述Micro-LED芯片之间，所述柔性封装层覆盖所述Micro-LED芯片、所述黑矩阵层以及所述第二连接电极。\n\n[0027]在本发明实施例提供的柔性Micro-LED显示面板中，所述遮光层、所述栅极层、所述源极以及所述漏极所采用的材料为铝-钕合金。\n\n[0028]在本发明实施例提供的柔性Micro-LED显示面板中，所述阻隔层和所述柔性封装层所采用的材料为TG-41聚合物。\n\n[0029]在本发明实施例提供的柔性Micro-LED显示面板中，所述有源层所采用的材料为IGZO。\n\n[0030]在本发明实施例提供的柔性Micro-LED显示面板中，所述第二衬底基板的厚度为8um～12um。\n\n[0031]本发明实施例提供一种柔性Micro-LED显示面板的制作方法，包括以下步骤：\n\n[0032]S10：制备阵列基板，所述阵列基板包括第一衬底基板，在所述第一衬底基板上形成薄膜晶体管阵列层；\n\n[0033]S20：在所述薄膜晶体管阵列层上依次形成第一连接电极层、第二连接电极层以及黑矩阵层，所述第一连接电极层和所述第二连接电极层电连接；\n\n[0034]S30：将多个Micro-LED芯片转移至所述第二连接电极层上，进行固晶键合处理，以使所述Micro-LED芯片经由所述第一连接电极层和所述第二连接电极层连接至所述薄膜晶体管阵列层；\n\n[0035]S40：在所述Micro-LED芯片上形成柔性封装层；以及\n\n[0036]S50：在所述柔性封装层上形成第二衬底基板，使得所述柔性显示面板的中性层A位于所述Micro-LED芯片上。\n\n[0037]在本发明实施例提供的柔性Micro-LED显示面板的制作方法中，所述步骤S10包括以下步骤：\n\n[0038]S101：提供所述第一衬底基板，在所述第一衬底基板上依次形成阻隔层、遮光层以及缓冲层；以及\n\n[0039]S102：在所述缓冲层上形成所述薄膜晶体管阵列层，所述薄膜晶体管阵列层包括依次形成于所述缓冲层上的有源层、栅极绝缘层、栅极层、层间介质层、源极和漏极以及钝化层。\n\n[0040]在本发明实施例提供的柔性Micro-LED显示面板的制作方法中，所述第一衬底基板和所述第二衬底基板所采用的材料为CPI。\n\n[0041]本发明的有益效果为：本发明提供的柔性Micro-LED显示面板及其制作方法，通过在覆盖Micro-LED芯片的柔性封装层上设置第二衬底基板来使柔性Micro-LED显示面板的中性层位于薄膜晶体管阵列层上，从而降低断线风险；第一衬底基板和第二衬底基板均采用CPI透明柔性材料，以及通过采用IGZO工艺、AL-Nd制程以及设置阻隔层和封装层用于水氧阻隔，从而实现Micro-LED显示面板柔性显示，且具有高透明度、高响应速度、高色域、长寿命、低功耗、轻薄、耐摔等优点，可以做成小曲率甚至可以实现动态弯折，大大拓宽了显示的应用范畴。\n\n附图说明\n\n[0042]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0043]图1为本发明实施例提供的一种柔性Micro-LED显示面板的截面结构示意图；\n\n[0044]图2为本发明实施例提供的一种柔性Micro-LED显示面板的制作方法的流程图；\n\n[0045]图3A～图3F为本发明实施例提高的一种柔性Micro-LED显示面板的制作方法的流程结构示意图。\n\n具体实施方式\n\n[0046]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0047]本发明针对现有技术的柔性Micro-LED显示面板不易弯折且容易发生断线，导致产品良率低，本实施例能够解决该缺陷。\n\n[0048]如图1所示，本发明实施例提供的柔性Micro-LED显示面板，包括阵列基板、第一连接电极层112、第二连接电极层113、多个Micro-LED芯片115、柔性封装层116以及第二衬底基板117。\n\n[0049]所述阵列基板包括第一衬底基板101以及设置于所述第一衬底基板101上的薄膜晶体管阵列层，具体地，所述阵列基板还包括阻隔层102、遮光层103、缓冲层104、层间介质层108、钝化层111以及黑矩阵层114，其中所述薄膜晶体管阵列层包括有源层105、栅极绝缘层106、栅极层107以及源极109和漏极110。\n\n[0050]所述第一衬底基板101为柔性基板，所述第一衬底基板101所采用的材料可以为透明聚酰亚胺(Colorless Polyimide，CPI)，由于CPI材料具有传统聚酰亚胺的优异性能，具有高耐热、高可靠、耐挠曲、低密度、低介电常数、易于实现微细图形电路加工等特性，可应用于折叠屏的柔性显示技术；所述阻隔层102设置于所述第一衬底基板101上，用于防止外部水分或氧气侵蚀所述薄膜晶体管阵列层，可选地，所述阻隔层102所采用的材料可以为TG-41聚合物等复合类材料，具有良好的水氧阻隔性能；所述遮光层103设置于所述阻隔层102上，所述遮光层103与所述有源层105相对设置，可有效阻挡环境光，以对所述有源层105进行遮光保护；所述缓冲层104覆盖所述遮光层103和所述阻隔层102，所述缓冲层104可以采用氮化硅或氧化硅材料制成，起到缓冲和保护的作用。\n\n[0051]所述有源层105设置于所述缓冲层104上，所述有源层105可以采用铟镓锌氧化物(indium gallium zinc oxide，IGZO)材料，能够使得制备的所述薄膜晶体管阵列层呈现透明柔性；所述栅极绝缘层106设置于所述有源层105上；所述栅极层107设置于所述栅极绝缘层106上；所述层间介质层108覆盖所述栅极层107、所述有源层105及所述缓冲层104上，所述层间介质层108的材料可以为氧化硅或氮化硅或氮氧化硅等绝缘材料，所述层间介质层可以是单层结构，如单层的氮化硅层、单层的氧化硅层等，也可以是多层叠层结构，如氮化硅/氧化硅叠层；所述源极109和所述漏极110设置于所述层间介质层108上，所述源极109和所述漏极110通过过孔连接至所述有源层105；所述钝化层111覆盖所述源极109、所述漏极110及所述层间介质层108，所述钝化层111的材料可以为氮化硅或氧化硅。\n\n[0052]可选地，所述遮光层103、所述栅极层107、所述源极109以及所述漏极110所采用的材料为铝-钕合金，由于铝-钕合金很适合柔性弯折，故能够提高所述柔性Micro-LED显示面板的折叠性能。\n\n[0053]所述第一连接电极层112设置于所述薄膜晶体管阵列层上，并与所述薄膜晶体管之间通过过孔实现电连接，所述第一连接电极层112的材料可以为氧化铟锡(Indium tinoxide，ITO)；所述第二连接电极层113设置于所述第一连接电极层112上，所述第二连接电极层113的材料可以为金属材料，例如铜。\n\n[0054]多个Micro-LED芯片115设置于所述第二连接电极层113上，所述Micro-LED芯片115经由所述第一连接电极层112和所述第二连接电极层113连接至所述薄膜晶体管阵列层的所述漏极110上，以将电信号从薄膜晶体管传递给所述Micro-LED芯片115；具体，所述Micro-LED芯片115靠近所述第二连接电极层113的一侧设置有第一引脚1151和第二引脚1152，所述第一引脚1151和所述第二引脚1152与所述第二连接电极层113实现固晶键合。\n\n[0055]所述黑矩阵层114设置于相邻两个所述Micro-LED芯片115之间，防止相邻两个所述Micro-LED芯片115发出的光线出现串扰。\n\n[0056]所述柔性封装层116覆盖所述Micro-LED芯片115，用以封装所述Micro-LED芯片115，在本发明实施例中，所述柔性封装层116覆盖所述Micro-LED芯片115、所述黑矩阵层114以及所述第二连接电极层113。可选地，所述柔性封装层116的材料可以为TG-41聚合物等复合类材料，不仅具有良好的水氧阻隔性能，还能提高所述柔性Micro-LED显示面板的折叠性能。\n\n[0057]所述第二衬底基板117设置于所述柔性封装层116上，可选地，所述第二衬底基板117的材料可以与所述第一衬底基板101的材料相同，同样采用CPI材料；由于所述柔性Micro-LED显示面板在进行折叠时，所述薄膜晶体管阵列层中的金属走线容易发生断线，故需要说明的是，所述中性层A为在所述柔性Micro-LED显示面板折叠弯曲过程中受到的应力为零的所有位置形成的面(膜层)，此处金属走线不易发生断线，故本发明实施例中，可通过调整所述第二衬底基板117的厚度来控制所述柔性Micro-LED显示面板的所述中性层A位于所述薄膜晶体管阵列层上，从而降低所述柔性Micro-LED显示面板折叠时金属走线发生断线的风险。\n\n[0058]具体地，所述第二衬底基板117的厚度为8um～12um。\n\n[0059]如图2所示，本发明实施例还提供一种柔性Micro-LED显示面板的制作方法，包括以下步骤：\n\n[0060]S10：制备阵列基板，所述阵列基板包括第一衬底基板101，在所述第一衬底基板101上形成薄膜晶体管阵列层。\n\n[0061]具体地，步骤S10包括以下步骤：\n\n[0062]S101：提供所述第一衬底基板101，在所述第一衬底基板101上依次形成阻隔层102、遮光层103以及缓冲层104。\n\n[0063]如图3A所示，可以采用化学气相沉积法或溅射工艺形成所述阻隔层102、具有预设图案的所述遮光层103以及覆盖所述遮光层103和部分所述阻隔层102的缓冲层104，其中，对所述遮光层103进行图案化处理的工艺可以为湿法或干法刻蚀，所述遮光层103的材料可以为铝-钕合金。\n\n[0064]S102：在所述缓冲层104上形成所述薄膜晶体管阵列层，所述薄膜晶体管阵列层包括依次形成于所述缓冲层104上的有源层105、栅极绝缘层106、栅极层107、层间介质层108、源极109、漏极110以及钝化层111。\n\n[0065]如图3B所示，首先，可通过化学气相沉积或其它工艺依次在所述缓冲层104远离所述第一衬底基板101的一侧上形成所述有源层105、所述栅极绝缘层106、具有预设图案的的所述栅极层107、所述层间介质层108以及源极109和漏极110，其中，所述有源层105在所述第一衬底基板101上的正投影位于所述遮光层103在所述第一衬底基板101上的正投影内，所述有源层105的材料可为IGZO；所述栅极绝缘层106的材料可为为氧化硅、氮化硅等绝缘材料；所述栅极层107、所述源极109以及所述漏极110的材料可以为铝-钕合金；所述层间介质层108的材料包括氧化硅、氮化硅、氮氧化硅中的至少一种；之后，可通过化学气相沉积或其它工艺依次在在所述源极109、所述漏极110及所述层间介质层108上形成钝化层，并形成贯穿所述钝化层111的过孔，通过所述钝化层111的材料可以为氧化硅或氮化硅或氮氧化硅等绝缘材料。\n\n[0066]S20：在所述薄膜晶体管阵列层上依次形成第一连接电极层112、第二连接电极层113以及黑矩阵层114，所述第一连接电极层112和所述第二连接电极层113电连接。\n\n[0067]如图3C所示，在所述钝化层111上依次形成所述第一连接电极层112、所述第二连接电极层113以及所述黑矩阵层114，所述第一连接电极层112和所述第二连接电极层113异层设置，所述黑矩阵层114覆盖部分所述钝化层111和部分所述第二连接电极层113，所述第一连接电极层112通过贯穿所述钝化层111的过孔与所述漏极110连接电连接，所述第一连接电极层112的材料可以为ITO，所述第二连接电极层113的材料可以为金属材料，例如铜。\n\n[0068]S30：将多个Micro-LED芯片115转移至所述第二连接电极层113上，进行固晶键合处理，以使所述Micro-LED芯片115经由所述第一连接电极层112和所述第二连接电极层113连接至所述薄膜晶体管阵列层。\n\n[0069]如图3D所示，所述Micro-LED芯片115包括第一引脚1151和第二引脚1152，将所述第一引脚1151和所述第二引脚1152与所述第二连接电极层113电连接，所述黑矩阵层114位于相邻两个所述Micro-LED芯片115之间。\n\n[0070]S40：在所述Micro-LED芯片115上形成柔性封装层116。\n\n[0071]如图3E所示，所述柔性封装层116用于封装所述Micro-LED芯片115，防止所述Micro-LED芯片115受到外界水氧侵蚀，所述柔性封装层116所采用的材料为TG-41聚合物等复合类材料。\n\n[0072]S50：在所述柔性封装层116上形成第二衬底基板117，使得所述柔性Micro-LED显示面板的中性层A位于所述薄膜晶体管阵列层上。\n\n[0073]如图3F所示，所述第二衬底基板117的材料可以为CPI，所述第二衬底基板117的厚度为8um～12um，可通过调整所述第二衬底基板117的厚度以使所述柔性Micro-LED显示面板的中形层位于所述薄膜晶体管阵列层上，以降低金属走线断线风险。\n\n[0074]有益效果为：本发明实施例提供的柔性Micro-LED显示面板及其制作方法，通过在覆盖Micro-LED芯片的柔性封装层上设置第二衬底基板来使柔性Micro-LED显示面板的中性层位于薄膜晶体管阵列层上，从而降低金属走线断线风险；第一衬底基板和第二衬底基板均采用CPI透明柔性材料，以及通过采用IGZO工艺、AL-Nd制程以及设置阻隔层和封装层用于水氧阻隔，从而实现Micro-LED显示面板柔性显示，且具有高透明度、高响应速度、高色域、长寿命、低功耗、轻薄、耐摔等优点，可以做成小曲率甚至可以实现动态弯折，大大拓宽了显示的应用范畴。\n\n[0075]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种柔性Micro-LED显示面板及其制作方法。\n\n背景技术\n\n[0002]微发光二极管(Micro-Light Emitting Diode，Micro-LED)显示面板因兼具有机发光二极管显示面板(Organic Light-Emitting Diode，OLED)轻薄、可柔、抗摔、可折叠等优点，同时还具有寿命长、超低功耗、高响应速度、高透明度等优势，被视为下一代最具发展潜力的新型显示技术，非常符合未来的发展趋势。\n\n[0003]目前已有多家厂商研发的刚性Micro-LED显示面板展出，然而柔性Micro-LED显示面板却因技术上存在很多缺陷，离量产还有一段距离；柔性Micro-LED显示面板的主要难点体现在低良率上，主要表现在Micro-LED芯片巨量转移及容易发生断线等方面，从而导致成产成本较高。\n\n[0004]综上所述，需要提供一种新的柔性Micro-LED显示面板及其制作方法，来解决上述技术问题。\n\n发明内容\n\n[0005]本发明提供的柔性Micro-LED显示面板及其制作方法，解决了现有的Micro-LED显示面板不易弯折且容易发生断线，导致产品良率低的技术问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明实施例提供一种柔性Micro-LED显示面板，包括：\n\n[0008]阵列基板，包括第一衬底基板以及设置于所述第一衬底基板上的薄膜晶体管阵列层；\n\n[0009]第一连接电极层，设置于所述薄膜晶体管阵列层上，并与所述薄膜晶体管阵列层电连接；\n\n[0010]第二连接电极层，设置于所述第一连接电极层上；\n\n[0011]多个Micro-LED芯片，设置于所述第二连接电极层上，所述Micro-LED芯片经由所述第一连接电极层和所述第二连接电极层连接至所述薄膜晶体管阵列层；\n\n[0012]柔性封装层，覆盖所述Micro-LED芯片；以及\n\n[0013]第二衬底基板，设置于所述柔性封装层上；\n\n[0014]其中，所述第一衬底基板和所述第二衬底基板均为柔性基板，所述第二衬底基板用于控制所述柔性显示面板的中性层位于所述薄膜晶体管阵列层上。\n\n[0015]在本发明实施例提供的柔性Micro-LED显示面板中，所述第一衬底基板和所述第二衬底基板所采用的材料为CPI。\n\n[0016]在本发明实施例提供的柔性Micro-LED显示面板中，所述阵列基板还包括：\n\n[0017]阻隔层，设置于所述第一衬底基板上；\n\n[0018]遮光层，设置于所述阻隔层上；\n\n[0019]缓冲层，覆盖所述遮光层和所述阻隔层；\n\n[0020]有源层，设置于所述缓冲层上，所述遮光层和所述有源层相对设置；\n\n[0021]栅极绝缘层，设置于所述有源层上；\n\n[0022]栅极层，设置于所述栅极绝缘层上；\n\n[0023]层间介质层，覆盖所述栅极层、所述有源层及所述缓冲层上；\n\n[0024]源极和漏极，设置于所述层间介质层上，所述源极和所述漏极连接至所述有源层；\n\n[0025]钝化层，覆盖所述源极、所述漏极及所述层间介质层，所述第一连接电极设置于所述钝化层上；以及\n\n[0026]黑矩阵层，设置于相邻两个所述Micro-LED芯片之间，所述柔性封装层覆盖所述Micro-LED芯片、所述黑矩阵层以及所述第二连接电极。\n\n[0027]在本发明实施例提供的柔性Micro-LED显示面板中，所述遮光层、所述栅极层、所述源极以及所述漏极所采用的材料为铝-钕合金。\n\n[0028]在本发明实施例提供的柔性Micro-LED显示面板中，所述阻隔层和所述柔性封装层所采用的材料为TG-41聚合物。\n\n[0029]在本发明实施例提供的柔性Micro-LED显示面板中，所述有源层所采用的材料为IGZO。\n\n[0030]在本发明实施例提供的柔性Micro-LED显示面板中，所述第二衬底基板的厚度为8um～12um。\n\n[0031]本发明实施例提供一种柔性Micro-LED显示面板的制作方法，包括以下步骤：\n\n[0032]S10：制备阵列基板，所述阵列基板包括第一衬底基板，在所述第一衬底基板上形成薄膜晶体管阵列层；\n\n[0033]S20：在所述薄膜晶体管阵列层上依次形成第一连接电极层、第二连接电极层以及黑矩阵层，所述第一连接电极层和所述第二连接电极层电连接；\n\n[0034]S30：将多个Micro-LED芯片转移至所述第二连接电极层上，进行固晶键合处理，以使所述Micro-LED芯片经由所述第一连接电极层和所述第二连接电极层连接至所述薄膜晶体管阵列层；\n\n[0035]S40：在所述Micro-LED芯片上形成柔性封装层；以及\n\n[0036]S50：在所述柔性封装层上形成第二衬底基板，使得所述柔性显示面板的中性层A位于所述Micro-LED芯片上。\n\n[0037]在本发明实施例提供的柔性Micro-LED显示面板的制作方法中，所述步骤S10包括以下步骤：\n\n[0038]S101：提供所述第一衬底基板，在所述第一衬底基板上依次形成阻隔层、遮光层以及缓冲层；以及\n\n[0039]S102：在所述缓冲层上形成所述薄膜晶体管阵列层，所述薄膜晶体管阵列层包括依次形成于所述缓冲层上的有源层、栅极绝缘层、栅极层、层间介质层、源极和漏极以及钝化层。\n\n[0040]在本发明实施例提供的柔性Micro-LED显示面板的制作方法中，所述第一衬底基板和所述第二衬底基板所采用的材料为CPI。\n\n[0041]本发明的有益效果为：本发明提供的柔性Micro-LED显示面板及其制作方法，通过在覆盖Micro-LED芯片的柔性封装层上设置第二衬底基板来使柔性Micro-LED显示面板的中性层位于薄膜晶体管阵列层上，从而降低断线风险；第一衬底基板和第二衬底基板均采用CPI透明柔性材料，以及通过采用IGZO工艺、AL-Nd制程以及设置阻隔层和封装层用于水氧阻隔，从而实现Micro-LED显示面板柔性显示，且具有高透明度、高响应速度、高色域、长寿命、低功耗、轻薄、耐摔等优点，可以做成小曲率甚至可以实现动态弯折，大大拓宽了显示的应用范畴。\n\n附图说明\n\n[0042]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0043]图1为本发明实施例提供的一种柔性Micro-LED显示面板的截面结构示意图；\n\n[0044]图2为本发明实施例提供的一种柔性Micro-LED显示面板的制作方法的流程图；\n\n[0045]图3A～图3F为本发明实施例提高的一种柔性Micro-LED显示面板的制作方法的流程结构示意图。\n\n具体实施方式\n\n[0046]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0047]本发明针对现有技术的柔性Micro-LED显示面板不易弯折且容易发生断线，导致产品良率低，本实施例能够解决该缺陷。\n\n[0048]如图1所示，本发明实施例提供的柔性Micro-LED显示面板，包括阵列基板、第一连接电极层112、第二连接电极层113、多个Micro-LED芯片115、柔性封装层116以及第二衬底基板117。\n\n[0049]所述阵列基板包括第一衬底基板101以及设置于所述第一衬底基板101上的薄膜晶体管阵列层，具体地，所述阵列基板还包括阻隔层102、遮光层103、缓冲层104、层间介质层108、钝化层111以及黑矩阵层114，其中所述薄膜晶体管阵列层包括有源层105、栅极绝缘层106、栅极层107以及源极109和漏极110。\n\n[0050]所述第一衬底基板101为柔性基板，所述第一衬底基板101所采用的材料可以为透明聚酰亚胺(Colorless Polyimide，CPI)，由于CPI材料具有传统聚酰亚胺的优异性能，具有高耐热、高可靠、耐挠曲、低密度、低介电常数、易于实现微细图形电路加工等特性，可应用于折叠屏的柔性显示技术；所述阻隔层102设置于所述第一衬底基板101上，用于防止外部水分或氧气侵蚀所述薄膜晶体管阵列层，可选地，所述阻隔层102所采用的材料可以为TG-41聚合物等复合类材料，具有良好的水氧阻隔性能；所述遮光层103设置于所述阻隔层102上，所述遮光层103与所述有源层105相对设置，可有效阻挡环境光，以对所述有源层105进行遮光保护；所述缓冲层104覆盖所述遮光层103和所述阻隔层102，所述缓冲层104可以采用氮化硅或氧化硅材料制成，起到缓冲和保护的作用。\n\n[0051]所述有源层105设置于所述缓冲层104上，所述有源层105可以采用铟镓锌氧化物(indium gallium zinc oxide，IGZO)材料，能够使得制备的所述薄膜晶体管阵列层呈现透明柔性；所述栅极绝缘层106设置于所述有源层105上；所述栅极层107设置于所述栅极绝缘层106上；所述层间介质层108覆盖所述栅极层107、所述有源层105及所述缓冲层104上，所述层间介质层108的材料可以为氧化硅或氮化硅或氮氧化硅等绝缘材料，所述层间介质层可以是单层结构，如单层的氮化硅层、单层的氧化硅层等，也可以是多层叠层结构，如氮化硅/氧化硅叠层；所述源极109和所述漏极110设置于所述层间介质层108上，所述源极109和所述漏极110通过过孔连接至所述有源层105；所述钝化层111覆盖所述源极109、所述漏极110及所述层间介质层108，所述钝化层111的材料可以为氮化硅或氧化硅。\n\n[0052]可选地，所述遮光层103、所述栅极层107、所述源极109以及所述漏极110所采用的材料为铝-钕合金，由于铝-钕合金很适合柔性弯折，故能够提高所述柔性Micro-LED显示面板的折叠性能。\n\n[0053]所述第一连接电极层112设置于所述薄膜晶体管阵列层上，并与所述薄膜晶体管之间通过过孔实现电连接，所述第一连接电极层112的材料可以为氧化铟锡(Indium tinoxide，ITO)；所述第二连接电极层113设置于所述第一连接电极层112上，所述第二连接电极层113的材料可以为金属材料，例如铜。\n\n[0054]多个Micro-LED芯片115设置于所述第二连接电极层113上，所述Micro-LED芯片115经由所述第一连接电极层112和所述第二连接电极层113连接至所述薄膜晶体管阵列层的所述漏极110上，以将电信号从薄膜晶体管传递给所述Micro-LED芯片115；具体，所述Micro-LED芯片115靠近所述第二连接电极层113的一侧设置有第一引脚1151和第二引脚1152，所述第一引脚1151和所述第二引脚1152与所述第二连接电极层113实现固晶键合。\n\n[0055]所述黑矩阵层114设置于相邻两个所述Micro-LED芯片115之间，防止相邻两个所述Micro-LED芯片115发出的光线出现串扰。\n\n[0056]所述柔性封装层116覆盖所述Micro-LED芯片115，用以封装所述Micro-LED芯片115，在本发明实施例中，所述柔性封装层116覆盖所述Micro-LED芯片115、所述黑矩阵层114以及所述第二连接电极层113。可选地，所述柔性封装层116的材料可以为TG-41聚合物等复合类材料，不仅具有良好的水氧阻隔性能，还能提高所述柔性Micro-LED显示面板的折叠性能。\n\n[0057]所述第二衬底基板117设置于所述柔性封装层116上，可选地，所述第二衬底基板117的材料可以与所述第一衬底基板101的材料相同，同样采用CPI材料；由于所述柔性Micro-LED显示面板在进行折叠时，所述薄膜晶体管阵列层中的金属走线容易发生断线，故需要说明的是，所述中性层A为在所述柔性Micro-LED显示面板折叠弯曲过程中受到的应力为零的所有位置形成的面(膜层)，此处金属走线不易发生断线，故本发明实施例中，可通过调整所述第二衬底基板117的厚度来控制所述柔性Micro-LED显示面板的所述中性层A位于所述薄膜晶体管阵列层上，从而降低所述柔性Micro-LED显示面板折叠时金属走线发生断线的风险。\n\n[0058]具体地，所述第二衬底基板117的厚度为8um～12um。\n\n[0059]如图2所示，本发明实施例还提供一种柔性Micro-LED显示面板的制作方法，包括以下步骤：\n\n[0060]S10：制备阵列基板，所述阵列基板包括第一衬底基板101，在所述第一衬底基板101上形成薄膜晶体管阵列层。\n\n[0061]具体地，步骤S10包括以下步骤：\n\n[0062]S101：提供所述第一衬底基板101，在所述第一衬底基板101上依次形成阻隔层102、遮光层103以及缓冲层104。\n\n[0063]如图3A所示，可以采用化学气相沉积法或溅射工艺形成所述阻隔层102、具有预设图案的所述遮光层103以及覆盖所述遮光层103和部分所述阻隔层102的缓冲层104，其中，对所述遮光层103进行图案化处理的工艺可以为湿法或干法刻蚀，所述遮光层103的材料可以为铝-钕合金。\n\n[0064]S102：在所述缓冲层104上形成所述薄膜晶体管阵列层，所述薄膜晶体管阵列层包括依次形成于所述缓冲层104上的有源层105、栅极绝缘层106、栅极层107、层间介质层108、源极109、漏极110以及钝化层111。\n\n[0065]如图3B所示，首先，可通过化学气相沉积或其它工艺依次在所述缓冲层104远离所述第一衬底基板101的一侧上形成所述有源层105、所述栅极绝缘层106、具有预设图案的的所述栅极层107、所述层间介质层108以及源极109和漏极110，其中，所述有源层105在所述第一衬底基板101上的正投影位于所述遮光层103在所述第一衬底基板101上的正投影内，所述有源层105的材料可为IGZO；所述栅极绝缘层106的材料可为为氧化硅、氮化硅等绝缘材料；所述栅极层107、所述源极109以及所述漏极110的材料可以为铝-钕合金；所述层间介质层108的材料包括氧化硅、氮化硅、氮氧化硅中的至少一种；之后，可通过化学气相沉积或其它工艺依次在在所述源极109、所述漏极110及所述层间介质层108上形成钝化层，并形成贯穿所述钝化层111的过孔，通过所述钝化层111的材料可以为氧化硅或氮化硅或氮氧化硅等绝缘材料。\n\n[0066]S20：在所述薄膜晶体管阵列层上依次形成第一连接电极层112、第二连接电极层113以及黑矩阵层114，所述第一连接电极层112和所述第二连接电极层113电连接。\n\n[0067]如图3C所示，在所述钝化层111上依次形成所述第一连接电极层112、所述第二连接电极层113以及所述黑矩阵层114，所述第一连接电极层112和所述第二连接电极层113异层设置，所述黑矩阵层114覆盖部分所述钝化层111和部分所述第二连接电极层113，所述第一连接电极层112通过贯穿所述钝化层111的过孔与所述漏极110连接电连接，所述第一连接电极层112的材料可以为ITO，所述第二连接电极层113的材料可以为金属材料，例如铜。\n\n[0068]S30：将多个Micro-LED芯片115转移至所述第二连接电极层113上，进行固晶键合处理，以使所述Micro-LED芯片115经由所述第一连接电极层112和所述第二连接电极层113连接至所述薄膜晶体管阵列层。\n\n[0069]如图3D所示，所述Micro-LED芯片115包括第一引脚1151和第二引脚1152，将所述第一引脚1151和所述第二引脚1152与所述第二连接电极层113电连接，所述黑矩阵层114位于相邻两个所述Micro-LED芯片115之间。\n\n[0070]S40：在所述Micro-LED芯片115上形成柔性封装层116。\n\n[0071]如图3E所示，所述柔性封装层116用于封装所述Micro-LED芯片115，防止所述Micro-LED芯片115受到外界水氧侵蚀，所述柔性封装层116所采用的材料为TG-41聚合物等复合类材料。\n\n[0072]S50：在所述柔性封装层116上形成第二衬底基板117，使得所述柔性Micro-LED显示面板的中性层A位于所述薄膜晶体管阵列层上。\n\n[0073]如图3F所示，所述第二衬底基板117的材料可以为CPI，所述第二衬底基板117的厚度为8um～12um，可通过调整所述第二衬底基板117的厚度以使所述柔性Micro-LED显示面板的中形层位于所述薄膜晶体管阵列层上，以降低金属走线断线风险。\n\n[0074]有益效果为：本发明实施例提供的柔性Micro-LED显示面板及其制作方法，通过在覆盖Micro-LED芯片的柔性封装层上设置第二衬底基板来使柔性Micro-LED显示面板的中性层位于薄膜晶体管阵列层上，从而降低金属走线断线风险；第一衬底基板和第二衬底基板均采用CPI透明柔性材料，以及通过采用IGZO工艺、AL-Nd制程以及设置阻隔层和封装层用于水氧阻隔，从而实现Micro-LED显示面板柔性显示，且具有高透明度、高响应速度、高色域、长寿命、低功耗、轻薄、耐摔等优点，可以做成小曲率甚至可以实现动态弯折，大大拓宽了显示的应用范畴。\n\n[0075]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10837, 23891, '技术领域\n\n[0001]本发明涉及液晶显示技术领域，具体涉及一种背光模组及显示装置。\n\n背景技术\n\n[0002]随着信息化时代的到来，显示器已经成为人机交流的标准界面。人类从外界获取信息，80％以上来自视觉，因此色彩丰富、亮度适中而又节能环保的显示设备，在人类的生产、生活以及各类人机交互场合具有非常重要的作用。近年来，随着液晶(Liquid CrystalDisplay，简称为LCD)、光显(Digital Light Processing，简称为DLP)背投、等离子等显示技术逐步完善。\n\n[0003]液晶是一种介于固态和液态之间的物质，是具有规则性分子排列的有机化合物，如果把它加热会呈现透明状的液体状态，把它冷却则会出现结晶颗粒的浑浊固体状态。用于液晶显示器的液晶分子结构排列类似细火柴棒，称为Nematic液晶，采用此类液晶制造的液晶显示器也就称为LCD液晶显示系统主要由液晶盒和背光组件组成。液晶显示器是通过高亮光源发光，射向导光板并在导光板内部经过多次的反射完成点光源或者线光源到面光源之间的转换，之后光线均匀、平行的投向偏光膜，然后透过液晶分子，继续通过上层偏光膜最终成像。\n\n[0004]液晶显示装置由于具有低耗能及低辐射等优点,已广泛用于现今的显示设备。随着液晶显示技术不断进步,大尺寸及薄型化的液晶显示装置越来越成为市场的主流需求,所以液晶显示器窄边框及无边框化也成为一种发展趋势。特别是全面屏技术的发展，将显示装置的背光模组做面内开孔结构作为摄像头放置区的移动终端应用已经面向市场推出。在此应用背景下，液晶显示装置基本架构包括面板、背光模组等，其中面板包括上偏光层101、CF玻璃基板102、TFT玻璃基板103、下偏光层104、等，背光模组包括增光片105、扩散片106、导光片107、背板108等，如图1所示。\n\n[0005]如图1所示，目前带有面内开孔结构的背光模组的开孔内侧109区域均无光源提供亮度，开孔的作用仅是作为开孔下方摄像头的环境光的收发通道。\n\n发明内容\n\n[0006]有鉴于此，本发明实施例提供了一种背光模组及显示装置，以解决现有技术中液晶显示装置的背光模组中的面内开孔无光源提供亮度的问题。\n\n[0007]为此，本发明实施例提供了如下技术方案：\n\n[0008]本发明第一方面，提供了一种背光模组，所述背光模组具有面内开孔，其特征在于，所述背光模组还包括：光源装置和导光体，所述光源装置包括各自独立驱动控制的第一光源和第二光源；所述导光体设置于所述面内开孔的孔壁处，并与所述第一光源对应设置，用于在预定条件下将所述第一光源发出的光线提供至所述面内开孔的区域。\n\n[0009]可选地，所述背光模组还包括：设置在所述光源装置上的功能膜层，所述功能膜层在所述面内开孔处对应设置有第一开孔；所述光源装置在所述面内开孔处，对应设置有第二开孔，所述第二开孔的直径小于所述第一开孔的直径。\n\n[0010]可选地，所述导光体的一端插装在所述第一开孔中，所述导光体的另一端插装在所述第二开孔中，所述导光体的一端的直径大于其另一端的直径。\n\n[0011]可选地，所述第一光源设置在所述光源装置与所述第一开孔重叠区域，所述第二光源设置在所述光源装置与所述功能膜层重叠区域。\n\n[0012]可选地，所述导光体的入光面与所述第一光源的出光面对应设置，所述导光体开设有通孔，所述导光体的出光面设置在所述通孔内壁上。\n\n[0013]可选地，所述导光体的出光面与所述导光体的入光面之间的夹角为锐角。\n\n[0014]可选地，所述导光体的侧面与所述光源装置之间设置有光线阻隔膜。\n\n[0015]可选地，所述光线阻隔膜为封胶，所述导光体在所述第二开孔中的侧面通过所述封胶与所述光源装置固定连接。\n\n[0016]可选地，所述光源装置包括：背板，设置在背板上的电路基板，以及设置在电路基板上的miniLED单元，所述第一光源和所述第二光源中的miniLED单元各自独立驱动控制。\n\n[0017]可选地，所述光源装置包括以下之一：RGB三色封装灯、通过透明胶水固定的RGB三色芯片；其中，所述RGB三色封装灯通过所述导光体向所述面内开孔的区域提供白色光线、红色光线、绿色光线或蓝色光线；所述RGB三色芯片分别通过所述导光体向所述面内开孔的区域提供红色光线、绿色光线或蓝色光线；所述背光模组还包括位于所述导光体之外区域的蓝色芯片以及设置于所述光源装置上方的量子点发光膜片。\n\n[0018]可选地，所述背光模组包括竖直设置的金属背板，所述导光体通过封胶固定至所述竖直设置的金属背板。\n\n[0019]本发明第二方面，提供了一种显示装置，包括上述第一方面中任一所述的背光模组。\n\n[0020]本发明实施例技术方案，具有如下优点：\n\n[0021]本发明实施例提供了一种背光模组及显示装置，其中，背光模组具有面内开孔，背光模组还包括：光源装置和导光体；光源装置包括各自独立驱动控制的第一光源和第二光源，导光体设置于所述面内开孔的孔壁处，并与第一光源对应设置，用于在预定条件下将第一光源发出的光线提供至面内开孔的区域。通过上述设置于背光模组面内开孔的孔壁处的导光体，在预定条件下，将第一光源发出的光线提供至该面内开孔的区域，相比于现有技术中，面内开孔仅仅作为其下方摄像装置的环境光的收发通道，而无光源提供亮度，上述实施例提供了一种应用于面内holeBLU结构并为hole区域提供光线控制的装置，现有技术中hole的作用仅是作为hole下方摄像头的环境光的收发通道，本发明实施例可以为hole区域提供光线，解决了现有技术中液晶显示装置的背光模组中的面内开孔无光源提供亮度的问题，从而实现在预定条件下具有亮度的背光模组的面内开孔，提供了更多的hole区域的场景应用。\n\n附图说明\n\n[0022]为了更清楚地说明本发明具体实施方式或现有技术中的技术方案，下面将对具体实施方式或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图是本发明的一些实施方式，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0023]附图中的部件不是成比例绘制的，而只是为了示出本发明的原理。为了便于示出和描述本发明的一些部分，附图中对应部分可能被放大，即，使其相对于在依据本发明实际制造的示例性装置中的其它部件变得更大。在附图中，相同的或类似的技术特征或部件将采用相同或类似的附图标记来表示。\n\n[0024]图1示出了现有技术中包括面内开孔的背光模组和显示装置的示意图；\n\n[0025]图2是根据本发明实施例的背光模组结构示意图；\n\n[0026]图3是根据本发明优选实施例的背光模组的制作方法的流程图；\n\n[0027]图4是根据本发明实施例的显示模组示意图。\n\n具体实施方式\n\n[0028]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0029]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0030]在本申请中，“示例性”一词用来表示“用作例子、例证或说明”。本申请中被描述为“示例性”的任何实施例不一定被解释为比其它实施例更优选或更具优势。为了使本领域任何技术人员能够实现和使用本申请，给出了以下描述。在以下描述中，为了解释的目的而列出了细节。应当明白的是，本领域普通技术人员可以认识到，在不使用这些特定细节的情况下也可以实现本申请。在其它实例中，不会对公知的结构和过程进行详细阐述，以避免不必要的细节使本申请的描述变得晦涩。因此，本申请并非旨在限于所示的实施例，而是与符合本申请所公开的原理和特征的最广范围相一致。\n\n[0031]其中，附图中膜层厚度和区域形状不反映其真实比例，目的只是示意说明本发明的内容。\n\n[0032]如上所述，目前带有面内开孔结构的背光模组的开孔内侧均无光源提供亮度，开孔的作用仅是作为开孔下方摄像头的环境光的收发通道。为解决面内开孔内显示的问题，本发明提供了一种背光模组及显示装置。下面逐一描述本发明的各实施方式，以便于本领域技术人员充分理解本发明的原理。\n\n[0033]根据本发明实施例，提供了一种背光模组,主要是针对全面屏和无边框的显示面板，当然也可以应用到普通有边框或者窄边框的显示面板中。只要是需要在显示面板上设置开孔的显示面板结构，均可以采用本发明中的结构，下面对显示面板的具体结构进行详细的说明。\n\n[0034]此外，下面所描述的本发明不同实施方式中所涉及的技术特征只要彼此之间未构成冲突就可以相互结合。\n\n[0035]图2是根据本发明实施例的背光模组结构示意图，如图2所示，背光模组具有面内开孔，背光模组还包括：光源装置201和导光体202，光源装置包括各自独立驱动控制的第一光源和第二光源，导光体202设置于该面内开孔的孔壁处，并与第一光源对应设置，用于在预定条件下将第一光源发出的光线提供至该面内开孔的区域。\n\n[0036]通过上述设置于背光模组面内开孔的孔壁处的导光体202，在预定条件下，将第一光源装置发出的光线提供至该面内开孔的区域，相比于现有技术中，面内开孔仅仅作为其下方摄像装置的环境光的收发通道，而无光源提供亮度，上述实施例提供了一种应用于面内hole BLU结构并为hole(即上述面内开孔)区域提供光线控制的装置，现有技术中hole的作用仅是作为hole下方摄像头的环境光的收发通道，本发明实施例可以为hole区域提供光线，解决了现有技术中液晶显示装置的背光模组中的面内开孔无光源提供亮度的问题，从而实现在预定条件下具有亮度的背光模组的面内开孔，提供了更多的hole区域的场景应用。在BLU的hole处增加光源和导光装置，搭配panel后提升终端产品的应用场景和使用体验，从而提升了竞争力。\n\n[0037]该背光装置还可以搭配盲孔的cell，实现hole内显示。盲孔的cell为屏下装置区对应下方安装硬件的区域，硬件结构包括下列结构中的一种或多种：摄像装置、起始键、听筒或扬声器，硬件结构的具体安装方式，在此不做限定，在实际制作显示面板的过程中，根据显示面板需要制作什么产品，确定对应需要在哪些位置设置硬件结构，以及需要切割的安装孔的尺寸大小和形状。在切割安装孔时，根据需要安装的硬件结构决定切割的安装孔的形状，针对不同的硬件结构，可以设置不同形状的安装孔，可选地，安装孔在平行于衬底基板方向上的截面形状为下列形状中的一种或多种：圆形、椭圆形、矩形、梯形、菱形或正方形。通常情况下，所述盲孔是连接表层和内层而不贯通整版的导通孔。盲孔位于印刷线路板的顶层和底层表面，具有一定深度，用于表层线路和下面的内层线路的连接，孔的深度通常不超过一定的比率(孔径)，本发明实施例对盲孔的深度不作限定，具体视实际情况而定。现有面内盲孔设计，显示装置的面内盲孔设计是在盲孔下方安置手机摄像头。盲孔贯穿阵列基板的玻璃以及玻璃上的缓冲层之外的所有膜层，盲孔还贯穿彩膜基板的彩色膜层以及黑色矩阵。\n\n[0038]以下实施例以上述硬件结构为摄像装置为例进行详细说明。\n\n[0039]如图2所示，背光模组还包括设置在光源装置上的功能膜层203。其中，多层膜片203可以包括自下而上依次设置的量子点(QuantumDots,简称为QD)发光膜片、一层或者多层扩散片(Difusser，简称为DIF)、下增光片(Brightness Enhancement Film，简称为BEF)、上增光片。功能膜层在面内开孔处对应设置有第一开孔。光源装置在面内开孔处，对应设置有第二开孔，第二开孔的直径小于第一开孔的直径，从而经过第一开孔处的光线可以折射至第二开孔处，改善第二开孔处的光线环境。于此相适应地，导光体的一端插装在第一开孔中，导光体的另一端插装在第二开孔中，导光体的一端的直径大于其另一端的直径。\n\n[0040]在一个可选实施例中，第一光源设置在光源装置与第一开孔重叠区域，以为第一开孔处提供光线。在另一个可选实施例中，第二光源设置在光源装置与功能膜层重叠区域，以供应充足的亮度与分布均匀的光源，使显示器能正常显示影像。\n\n[0041]在一个可选实施例中，导光体的入光面与第一光源的出光面对应设置，导光体开设有通孔，所述导光体的出光面设置在通孔内壁上。进一步地，导光体的出光面与导光体的入光面之间的夹角为锐角，从而将更多的光线折射至面内开孔区域，进一步改善了面内开孔光线环境。\n\n[0042]背光模组的光源装置201还包括芯片204。背光模组还包括柔性印刷电路板205(Flexible Printed Circuit，简称为FPC)和设置于柔性印刷电路板205下方的背板206。\n\n[0043]将光源装置201发出的光线提供至该面内开孔的区域的上述预设条件可以包括很多种，在上述面内开孔的下方设置的摄像装置的情况下，上述预设条件可以上位于该面内开孔下方的摄像装置处于关闭状态。具体地，一种应用于面内hole BLU结构并为hole区域提供光线控制的装置，当摄像装置开启时，hole附近的chip关闭(关闭区域的范围已不影响摄像装置摄像即可)，仅作为摄像装置的环境光收发通道，当摄像装置不启动时，导光环下方的chip可发出光线，搭配panel以支持hole内的显示应用。\n\n[0044]上述导光体是用于安装在面内开孔内，所以其纵向横截面的高度h和宽度w应适配于面内开孔的大小。其安装在面内开孔内时与背光模组的相对关系如图2所示。针对图2的面内开孔，还可以将导光体设计得更小，只要其能够安装在面内开孔内，且能够将来自背光模组的光折射到面内开孔内即可。\n\n[0045]上述导光体的形状不受限制，只要能实现将背光模组的相应位置的发光导入面内开孔中，可以采取本领域技术人员能想到的任意形状。例如，导光体的形状为空心筒体，且分为上下两部分，上部的横向横截面和下部的横向横截面均呈环形，且上部的横向横截面和下部的横向横截面的直径不同。应理解，本发明在此方面不受限制。导光体的上部的横向横截面和下部的横向横截面还可以呈近似环形，或为环形之外的形状，比如椭圆形、多边形等，如此形成各种形状的筒体。上部的横向横截面和下部的横向横截面还可以是不封闭的几何形状，比如圆弧或其他形式的曲线甚至直线，如此形成的导光体呈现出部分筒体的形状，即不是完整的筒体。\n\n[0046]导光体的内部还可以是实心的，或部分空心的。例如，其中导光体没有做穿，而是在导光体的上部，在导光体的内表面上设置有连接件，该连接件用于在横截面方向上连接内表面上的任意两个点。具体地，该连接件沿着内表面的环形内表面设置、且其横截面也为环形的一种示例性情况。该连接件还可以是比如连接内表面直径两端的一个杆，连接内表面任意点的多边形等。本领域技术人员可以根据光折射的需要以及对导光体结构的需求进行任意设置。\n\n[0047]导光体筒体的各个部分的厚度可以不一样，本领域技术人员可以根据实际情况比如背光模组的大小来采取具体的值。比如在面内开孔为6.7mm的情况下，图2所示的导光体竖直下段的厚度可以是1mm，且导光体上部的厚度可以从1-2mm渐变。\n\n[0048]导光体纵向横截面的形状可以多样化。图2示出了可能的一种形状，其中导光体的下部为圆柱形或近似圆柱形，上部的纵向横截面呈多边形形状，这是为了适配于图2所示的面内开孔的结构形状。本领域技术人员应理解，针对图2所示的面内开孔的结构形状以及其他面内开孔的结构形状，还可以设计不同形状的导光体。\n\n[0049]在另一个可选实施例中，针对同样的面内开孔结构可以采取的另外一种形状的导光体。例如，导光体上部区域的出光面和进光面皆是直面，然而根据实际情况还可以做成弧面。该导光体形状可以将来自背光模组的光折射向开孔的中心区域。本领域技术人员还可以根据需要的发光设置，设计出其他形状的导光体，比如设计成圆台、多面体等。\n\n[0050]在一个可选实施例中，上述导光体可以是透明材质，具体地，该透明材料可以是聚碳酸酯(Polycarbonate，简称为PC)，PC是几乎无色的玻璃态的无定形聚合物，有很好的光学性。PC高分子量树脂有很高的韧性，悬臂梁缺口冲击强度为600～900J/m，未填充牌号的热变形温度大约为130℃，玻璃纤维增强后可使这个数值增加10℃。PC的弯曲模量可达2400MPa以上，树脂可加工制成大的刚性制品。该透明材料还可以是聚甲基丙烯酸甲酯(polymethyl methacrylate)，简称PMMA)，PMMA材质具有高透明度，低价格，易于机械加工等优点，是经常使用的玻璃替代材料。\n\n[0051]为了使得光源装置发出的光线均匀地提供至该面内开孔的区域，在一个可选实施例中，该导光体的出光面为微结构，进而可以提高了提供至该面内开孔的区域的光线的均匀性。在一个可选实施例中，该导光体也可带有一定的雾度，并且出光面C表面可做微结构，使光线尽量均匀的分别在hole区域。\n\n[0052]在一个可选实施例中，导光体的外表面设置有光线阻隔膜。具体地，背光装置的hole处的透明导光体的外表面(超向光学膜片&LGP)需加工一层光线阻隔膜，以阻隔BLU内部的光线漏出hole中心区域，避免影响摄像装置的摄像质量。具体地，光线阻隔膜为封胶，导光体在第二开孔中的侧面通过封胶与光源装置固定连接。\n\n[0053]上述光源装置可以具有多种实现方式，在一个可选实施例中，hole处的透明导光体可做到各种异型环状，例如，背光装置采用miniLED或者microLED作为光源，且靠近hole下方的芯片(chip)单独为导光体提供光线。在一个具体的可选实施例中，光源装置包括背板，设置在背板上的电路基板，以及设置在电路基板上的miniLED单元，第一光源和第二光源中的miniLED单元各自独立驱动控制。在另一个具体的可选实施例中，光源装置可以是RGB三色封装灯，该RGB三色封装灯通过上述导光体向该面内开孔的区域提供白色光线、红色光线、绿色光线或蓝色光线。在另一个具体的可选实施例中，光源装置还可以是通过透明胶水固定的RGB三色芯片，该RGB三色芯片分别通过上述导光体向该面内开孔的区域提供红色光线、绿色光线或蓝色光线，其中胶水用来在固化后保护芯片，材质优选地可以选择为与导光体的材质比如PC折射率接近，比如是UV胶水，UV胶水材质的折射率和PC接近或者略小，以便更多光线的进入导光环，减少光线全反射。提供至面内开孔的区域的光线需要时白光，在光源装置为上述两种方式下，背光模组还包括位于该导光体之外区域的蓝色芯片以及设置于该光源装置上方的量子点发光膜片，具体的量子点发光膜片的位置为多层膜片203的最下方一层，灯板hole导光环之外的区域均采用蓝光芯片(导光环之外的区域)搭配量子点发光膜片以便背光在导光环之外的区域显示白光。本领域技术人员还可以根据本发明实施例原理设想出其他光源实现形式，本发明在此不受限制。\n\n[0054]如图2所述，上述背光模组包括还竖直设置的金属背板207，导光体202通过封胶208固定至竖直设置的金属背板207。封胶208的材料例如可以是无影胶(UVglue，简称为UV)或者硅胶等，其中，UV胶又称光敏胶、紫外光固化胶，无影胶是一种必须通过紫外线光照射才能固化的一类胶粘剂，它可以作为粘接剂使用，也可作为油漆、涂料、油墨等的胶料使用。UV是英文Ultraviolet Rays的缩写，即紫外光线。紫外线(UV)是肉眼看不见的，是可见光以外的一段电磁辐射，波长在10～400nm的范围。无影胶固化原理是UV固化材料中的光引发剂(或光敏剂)在紫外线的照射下吸收紫外光后产生活性自由基或阳离子，引发单体聚合、交联化学反应，使粘合剂在数秒钟内由液态转化为固态。\n\n[0055]本发明实施例还提供了一种背光模组的制作方法，如图3所示，包括如下步骤：\n\n[0056]S301：在背光模组设置一面内开孔；\n\n[0057]S302：在该面内开孔的孔壁处设置导光体；其中该导光体用于在预定条件下将该背光模组中的光源装置发出的光线提供至该面内开孔的区域。\n\n[0058]通过上述背光模组的制作方法，设置于背光模组面内开孔的孔壁处的导光体，在预定条件下，将光源装置发出的光线提供至该面内开孔的区域，相比于现有技术中，面内开孔仅仅作为其下方摄像装置的环境光的收发通道，而无光源提供亮度，上述实施例提供了一种应用于面内holeBLU结构并为hole(即上述面内开孔)区域提供光线控制的装置，现有技术中hole的作用仅是作为hole下方摄像头的环境光的收发通道，本发明实施例可以为hole区域提供光线，解决了现有技术中液晶显示装置的背光模组中的面内开孔无光源提供亮度的问题，从而实现在预定条件下具有亮度的背光模组的面内开孔，从而提供了更多的hole区域的场景应用。在BLU的hole处增加光源和导光装置，搭配panel后提升终端产品的应用场景和使用体验，从而提升了竞争力。该背光装置还可以搭配盲孔的cell，实现hole内显示。\n\n[0059]可选地，该预定条件包括位于该面内开孔下方的摄像装置处于关闭状态。\n\n[0060]本发明实施例还提供了一种显示装置，包括上述实施例中任一的背光模组，图4是根据本发明实施例的显示模组示意图，如图4所示，下部是背光模组，背光模组上方还包括自下而上依次设置的下偏光层104、TFT玻璃基板103、CF玻璃基板102、上偏光层101和CG玻璃401。\n\n[0061]在具体实施时，本发明主要适用于全面屏和无边框的显示面板，针对有机发光半导体(OrganicElectroluminesence Display，简称为OLED)显示面板，一般至少包括衬底基板、以及依次设置在衬底基板上的薄膜晶体管结构、阳极层、发光层、阴极层和封装层。另外还包括一些其它的膜层，例如，平坦化层、钝化层等，在此不做限定。薄膜晶体管层层叠设于衬底基板一侧表面，用于控制像素区域发光。具体地，薄膜晶体管层包括多个薄膜晶体管。每个薄膜晶体管包括形成于衬底基板上的栅电极、覆设于栅电极上的栅极绝缘层、形成于栅极绝缘层上的有源层、以及形成于有源层上的源电极与漏电极。可以理解，上述薄膜晶体管以底栅型为例进行说明，本发明在此不作限定，在其他一些实施例中，薄膜晶体管可以为顶栅型。\n\n[0062]如上所述，根据该实施方式的技术方案，通过在背光模组的开孔处增加光源和导光体，再搭配显示面板，提供了一种显示装置，其中当摄像头开启时，开孔附近的发光芯片关闭，关闭区域的范围以不影响摄像头成像即可，此时开孔仅用作摄像头的环境光收发通道。当摄像头不启动时，导光体附近的发光芯片可发出光线，搭配显示面板以支持开孔内的显示应用。根据本实施方式的技术方案，可提升终端产品的应用场景和使用体验，从而提高产品竞争力。\n\n[0063]进一步地，本发明实施例还提供了一种电子设备，该电子设备包括根据以上实施方式所述的显示装置。电子设备可以是以下之一：移动电话、平板、笔记本电脑、以及车载、工控、消费品显示装置。\n\n[0064]虽然结合附图描述了本发明的实施例，但是本领域技术人员可以在不脱离本发明的精神和范围的情况下作出各种修改和变型，这样的修改和变型均落入由所附权利要求所限定的范围之内。', '技术领域\n\n[0001]本发明涉及液晶显示技术领域，具体涉及一种背光模组及显示装置。\n\n背景技术\n\n[0002]随着信息化时代的到来，显示器已经成为人机交流的标准界面。人类从外界获取信息，80％以上来自视觉，因此色彩丰富、亮度适中而又节能环保的显示设备，在人类的生产、生活以及各类人机交互场合具有非常重要的作用。近年来，随着液晶(Liquid CrystalDisplay，简称为LCD)、光显(Digital Light Processing，简称为DLP)背投、等离子等显示技术逐步完善。\n\n[0003]液晶是一种介于固态和液态之间的物质，是具有规则性分子排列的有机化合物，如果把它加热会呈现透明状的液体状态，把它冷却则会出现结晶颗粒的浑浊固体状态。用于液晶显示器的液晶分子结构排列类似细火柴棒，称为Nematic液晶，采用此类液晶制造的液晶显示器也就称为LCD液晶显示系统主要由液晶盒和背光组件组成。液晶显示器是通过高亮光源发光，射向导光板并在导光板内部经过多次的反射完成点光源或者线光源到面光源之间的转换，之后光线均匀、平行的投向偏光膜，然后透过液晶分子，继续通过上层偏光膜最终成像。\n\n[0004]液晶显示装置由于具有低耗能及低辐射等优点,已广泛用于现今的显示设备。随着液晶显示技术不断进步,大尺寸及薄型化的液晶显示装置越来越成为市场的主流需求,所以液晶显示器窄边框及无边框化也成为一种发展趋势。特别是全面屏技术的发展，将显示装置的背光模组做面内开孔结构作为摄像头放置区的移动终端应用已经面向市场推出。在此应用背景下，液晶显示装置基本架构包括面板、背光模组等，其中面板包括上偏光层101、CF玻璃基板102、TFT玻璃基板103、下偏光层104、等，背光模组包括增光片105、扩散片106、导光片107、背板108等，如图1所示。\n\n[0005]如图1所示，目前带有面内开孔结构的背光模组的开孔内侧109区域均无光源提供亮度，开孔的作用仅是作为开孔下方摄像头的环境光的收发通道。\n\n发明内容\n\n[0006]有鉴于此，本发明实施例提供了一种背光模组及显示装置，以解决现有技术中液晶显示装置的背光模组中的面内开孔无光源提供亮度的问题。\n\n[0007]为此，本发明实施例提供了如下技术方案：\n\n[0008]本发明第一方面，提供了一种背光模组，所述背光模组具有面内开孔，其特征在于，所述背光模组还包括：光源装置和导光体，所述光源装置包括各自独立驱动控制的第一光源和第二光源；所述导光体设置于所述面内开孔的孔壁处，并与所述第一光源对应设置，用于在预定条件下将所述第一光源发出的光线提供至所述面内开孔的区域。\n\n[0009]可选地，所述背光模组还包括：设置在所述光源装置上的功能膜层，所述功能膜层在所述面内开孔处对应设置有第一开孔；所述光源装置在所述面内开孔处，对应设置有第二开孔，所述第二开孔的直径小于所述第一开孔的直径。\n\n[0010]可选地，所述导光体的一端插装在所述第一开孔中，所述导光体的另一端插装在所述第二开孔中，所述导光体的一端的直径大于其另一端的直径。\n\n[0011]可选地，所述第一光源设置在所述光源装置与所述第一开孔重叠区域，所述第二光源设置在所述光源装置与所述功能膜层重叠区域。\n\n[0012]可选地，所述导光体的入光面与所述第一光源的出光面对应设置，所述导光体开设有通孔，所述导光体的出光面设置在所述通孔内壁上。\n\n[0013]可选地，所述导光体的出光面与所述导光体的入光面之间的夹角为锐角。\n\n[0014]可选地，所述导光体的侧面与所述光源装置之间设置有光线阻隔膜。\n\n[0015]可选地，所述光线阻隔膜为封胶，所述导光体在所述第二开孔中的侧面通过所述封胶与所述光源装置固定连接。\n\n[0016]可选地，所述光源装置包括：背板，设置在背板上的电路基板，以及设置在电路基板上的miniLED单元，所述第一光源和所述第二光源中的miniLED单元各自独立驱动控制。\n\n[0017]可选地，所述光源装置包括以下之一：RGB三色封装灯、通过透明胶水固定的RGB三色芯片；其中，所述RGB三色封装灯通过所述导光体向所述面内开孔的区域提供白色光线、红色光线、绿色光线或蓝色光线；所述RGB三色芯片分别通过所述导光体向所述面内开孔的区域提供红色光线、绿色光线或蓝色光线；所述背光模组还包括位于所述导光体之外区域的蓝色芯片以及设置于所述光源装置上方的量子点发光膜片。\n\n[0018]可选地，所述背光模组包括竖直设置的金属背板，所述导光体通过封胶固定至所述竖直设置的金属背板。\n\n[0019]本发明第二方面，提供了一种显示装置，包括上述第一方面中任一所述的背光模组。\n\n[0020]本发明实施例技术方案，具有如下优点：\n\n[0021]本发明实施例提供了一种背光模组及显示装置，其中，背光模组具有面内开孔，背光模组还包括：光源装置和导光体；光源装置包括各自独立驱动控制的第一光源和第二光源，导光体设置于所述面内开孔的孔壁处，并与第一光源对应设置，用于在预定条件下将第一光源发出的光线提供至面内开孔的区域。通过上述设置于背光模组面内开孔的孔壁处的导光体，在预定条件下，将第一光源发出的光线提供至该面内开孔的区域，相比于现有技术中，面内开孔仅仅作为其下方摄像装置的环境光的收发通道，而无光源提供亮度，上述实施例提供了一种应用于面内holeBLU结构并为hole区域提供光线控制的装置，现有技术中hole的作用仅是作为hole下方摄像头的环境光的收发通道，本发明实施例可以为hole区域提供光线，解决了现有技术中液晶显示装置的背光模组中的面内开孔无光源提供亮度的问题，从而实现在预定条件下具有亮度的背光模组的面内开孔，提供了更多的hole区域的场景应用。\n\n附图说明\n\n[0022]为了更清楚地说明本发明具体实施方式或现有技术中的技术方案，下面将对具体实施方式或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图是本发明的一些实施方式，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0023]附图中的部件不是成比例绘制的，而只是为了示出本发明的原理。为了便于示出和描述本发明的一些部分，附图中对应部分可能被放大，即，使其相对于在依据本发明实际制造的示例性装置中的其它部件变得更大。在附图中，相同的或类似的技术特征或部件将采用相同或类似的附图标记来表示。\n\n[0024]图1示出了现有技术中包括面内开孔的背光模组和显示装置的示意图；\n\n[0025]图2是根据本发明实施例的背光模组结构示意图；\n\n[0026]图3是根据本发明优选实施例的背光模组的制作方法的流程图；\n\n[0027]图4是根据本发明实施例的显示模组示意图。\n\n具体实施方式\n\n[0028]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0029]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0030]在本申请中，“示例性”一词用来表示“用作例子、例证或说明”。本申请中被描述为“示例性”的任何实施例不一定被解释为比其它实施例更优选或更具优势。为了使本领域任何技术人员能够实现和使用本申请，给出了以下描述。在以下描述中，为了解释的目的而列出了细节。应当明白的是，本领域普通技术人员可以认识到，在不使用这些特定细节的情况下也可以实现本申请。在其它实例中，不会对公知的结构和过程进行详细阐述，以避免不必要的细节使本申请的描述变得晦涩。因此，本申请并非旨在限于所示的实施例，而是与符合本申请所公开的原理和特征的最广范围相一致。\n\n[0031]其中，附图中膜层厚度和区域形状不反映其真实比例，目的只是示意说明本发明的内容。\n\n[0032]如上所述，目前带有面内开孔结构的背光模组的开孔内侧均无光源提供亮度，开孔的作用仅是作为开孔下方摄像头的环境光的收发通道。为解决面内开孔内显示的问题，本发明提供了一种背光模组及显示装置。下面逐一描述本发明的各实施方式，以便于本领域技术人员充分理解本发明的原理。\n\n[0033]根据本发明实施例，提供了一种背光模组,主要是针对全面屏和无边框的显示面板，当然也可以应用到普通有边框或者窄边框的显示面板中。只要是需要在显示面板上设置开孔的显示面板结构，均可以采用本发明中的结构，下面对显示面板的具体结构进行详细的说明。\n\n[0034]此外，下面所描述的本发明不同实施方式中所涉及的技术特征只要彼此之间未构成冲突就可以相互结合。\n\n[0035]图2是根据本发明实施例的背光模组结构示意图，如图2所示，背光模组具有面内开孔，背光模组还包括：光源装置201和导光体202，光源装置包括各自独立驱动控制的第一光源和第二光源，导光体202设置于该面内开孔的孔壁处，并与第一光源对应设置，用于在预定条件下将第一光源发出的光线提供至该面内开孔的区域。\n\n[0036]通过上述设置于背光模组面内开孔的孔壁处的导光体202，在预定条件下，将第一光源装置发出的光线提供至该面内开孔的区域，相比于现有技术中，面内开孔仅仅作为其下方摄像装置的环境光的收发通道，而无光源提供亮度，上述实施例提供了一种应用于面内hole BLU结构并为hole(即上述面内开孔)区域提供光线控制的装置，现有技术中hole的作用仅是作为hole下方摄像头的环境光的收发通道，本发明实施例可以为hole区域提供光线，解决了现有技术中液晶显示装置的背光模组中的面内开孔无光源提供亮度的问题，从而实现在预定条件下具有亮度的背光模组的面内开孔，提供了更多的hole区域的场景应用。在BLU的hole处增加光源和导光装置，搭配panel后提升终端产品的应用场景和使用体验，从而提升了竞争力。\n\n[0037]该背光装置还可以搭配盲孔的cell，实现hole内显示。盲孔的cell为屏下装置区对应下方安装硬件的区域，硬件结构包括下列结构中的一种或多种：摄像装置、起始键、听筒或扬声器，硬件结构的具体安装方式，在此不做限定，在实际制作显示面板的过程中，根据显示面板需要制作什么产品，确定对应需要在哪些位置设置硬件结构，以及需要切割的安装孔的尺寸大小和形状。在切割安装孔时，根据需要安装的硬件结构决定切割的安装孔的形状，针对不同的硬件结构，可以设置不同形状的安装孔，可选地，安装孔在平行于衬底基板方向上的截面形状为下列形状中的一种或多种：圆形、椭圆形、矩形、梯形、菱形或正方形。通常情况下，所述盲孔是连接表层和内层而不贯通整版的导通孔。盲孔位于印刷线路板的顶层和底层表面，具有一定深度，用于表层线路和下面的内层线路的连接，孔的深度通常不超过一定的比率(孔径)，本发明实施例对盲孔的深度不作限定，具体视实际情况而定。现有面内盲孔设计，显示装置的面内盲孔设计是在盲孔下方安置手机摄像头。盲孔贯穿阵列基板的玻璃以及玻璃上的缓冲层之外的所有膜层，盲孔还贯穿彩膜基板的彩色膜层以及黑色矩阵。\n\n[0038]以下实施例以上述硬件结构为摄像装置为例进行详细说明。\n\n[0039]如图2所示，背光模组还包括设置在光源装置上的功能膜层203。其中，多层膜片203可以包括自下而上依次设置的量子点(QuantumDots,简称为QD)发光膜片、一层或者多层扩散片(Difusser，简称为DIF)、下增光片(Brightness Enhancement Film，简称为BEF)、上增光片。功能膜层在面内开孔处对应设置有第一开孔。光源装置在面内开孔处，对应设置有第二开孔，第二开孔的直径小于第一开孔的直径，从而经过第一开孔处的光线可以折射至第二开孔处，改善第二开孔处的光线环境。于此相适应地，导光体的一端插装在第一开孔中，导光体的另一端插装在第二开孔中，导光体的一端的直径大于其另一端的直径。\n\n[0040]在一个可选实施例中，第一光源设置在光源装置与第一开孔重叠区域，以为第一开孔处提供光线。在另一个可选实施例中，第二光源设置在光源装置与功能膜层重叠区域，以供应充足的亮度与分布均匀的光源，使显示器能正常显示影像。\n\n[0041]在一个可选实施例中，导光体的入光面与第一光源的出光面对应设置，导光体开设有通孔，所述导光体的出光面设置在通孔内壁上。进一步地，导光体的出光面与导光体的入光面之间的夹角为锐角，从而将更多的光线折射至面内开孔区域，进一步改善了面内开孔光线环境。\n\n[0042]背光模组的光源装置201还包括芯片204。背光模组还包括柔性印刷电路板205(Flexible Printed Circuit，简称为FPC)和设置于柔性印刷电路板205下方的背板206。\n\n[0043]将光源装置201发出的光线提供至该面内开孔的区域的上述预设条件可以包括很多种，在上述面内开孔的下方设置的摄像装置的情况下，上述预设条件可以上位于该面内开孔下方的摄像装置处于关闭状态。具体地，一种应用于面内hole BLU结构并为hole区域提供光线控制的装置，当摄像装置开启时，hole附近的chip关闭(关闭区域的范围已不影响摄像装置摄像即可)，仅作为摄像装置的环境光收发通道，当摄像装置不启动时，导光环下方的chip可发出光线，搭配panel以支持hole内的显示应用。\n\n[0044]上述导光体是用于安装在面内开孔内，所以其纵向横截面的高度h和宽度w应适配于面内开孔的大小。其安装在面内开孔内时与背光模组的相对关系如图2所示。针对图2的面内开孔，还可以将导光体设计得更小，只要其能够安装在面内开孔内，且能够将来自背光模组的光折射到面内开孔内即可。\n\n[0045]上述导光体的形状不受限制，只要能实现将背光模组的相应位置的发光导入面内开孔中，可以采取本领域技术人员能想到的任意形状。例如，导光体的形状为空心筒体，且分为上下两部分，上部的横向横截面和下部的横向横截面均呈环形，且上部的横向横截面和下部的横向横截面的直径不同。应理解，本发明在此方面不受限制。导光体的上部的横向横截面和下部的横向横截面还可以呈近似环形，或为环形之外的形状，比如椭圆形、多边形等，如此形成各种形状的筒体。上部的横向横截面和下部的横向横截面还可以是不封闭的几何形状，比如圆弧或其他形式的曲线甚至直线，如此形成的导光体呈现出部分筒体的形状，即不是完整的筒体。\n\n[0046]导光体的内部还可以是实心的，或部分空心的。例如，其中导光体没有做穿，而是在导光体的上部，在导光体的内表面上设置有连接件，该连接件用于在横截面方向上连接内表面上的任意两个点。具体地，该连接件沿着内表面的环形内表面设置、且其横截面也为环形的一种示例性情况。该连接件还可以是比如连接内表面直径两端的一个杆，连接内表面任意点的多边形等。本领域技术人员可以根据光折射的需要以及对导光体结构的需求进行任意设置。\n\n[0047]导光体筒体的各个部分的厚度可以不一样，本领域技术人员可以根据实际情况比如背光模组的大小来采取具体的值。比如在面内开孔为6.7mm的情况下，图2所示的导光体竖直下段的厚度可以是1mm，且导光体上部的厚度可以从1-2mm渐变。\n\n[0048]导光体纵向横截面的形状可以多样化。图2示出了可能的一种形状，其中导光体的下部为圆柱形或近似圆柱形，上部的纵向横截面呈多边形形状，这是为了适配于图2所示的面内开孔的结构形状。本领域技术人员应理解，针对图2所示的面内开孔的结构形状以及其他面内开孔的结构形状，还可以设计不同形状的导光体。\n\n[0049]在另一个可选实施例中，针对同样的面内开孔结构可以采取的另外一种形状的导光体。例如，导光体上部区域的出光面和进光面皆是直面，然而根据实际情况还可以做成弧面。该导光体形状可以将来自背光模组的光折射向开孔的中心区域。本领域技术人员还可以根据需要的发光设置，设计出其他形状的导光体，比如设计成圆台、多面体等。\n\n[0050]在一个可选实施例中，上述导光体可以是透明材质，具体地，该透明材料可以是聚碳酸酯(Polycarbonate，简称为PC)，PC是几乎无色的玻璃态的无定形聚合物，有很好的光学性。PC高分子量树脂有很高的韧性，悬臂梁缺口冲击强度为600～900J/m，未填充牌号的热变形温度大约为130℃，玻璃纤维增强后可使这个数值增加10℃。PC的弯曲模量可达2400MPa以上，树脂可加工制成大的刚性制品。该透明材料还可以是聚甲基丙烯酸甲酯(polymethyl methacrylate)，简称PMMA)，PMMA材质具有高透明度，低价格，易于机械加工等优点，是经常使用的玻璃替代材料。\n\n[0051]为了使得光源装置发出的光线均匀地提供至该面内开孔的区域，在一个可选实施例中，该导光体的出光面为微结构，进而可以提高了提供至该面内开孔的区域的光线的均匀性。在一个可选实施例中，该导光体也可带有一定的雾度，并且出光面C表面可做微结构，使光线尽量均匀的分别在hole区域。\n\n[0052]在一个可选实施例中，导光体的外表面设置有光线阻隔膜。具体地，背光装置的hole处的透明导光体的外表面(超向光学膜片&LGP)需加工一层光线阻隔膜，以阻隔BLU内部的光线漏出hole中心区域，避免影响摄像装置的摄像质量。具体地，光线阻隔膜为封胶，导光体在第二开孔中的侧面通过封胶与光源装置固定连接。\n\n[0053]上述光源装置可以具有多种实现方式，在一个可选实施例中，hole处的透明导光体可做到各种异型环状，例如，背光装置采用miniLED或者microLED作为光源，且靠近hole下方的芯片(chip)单独为导光体提供光线。在一个具体的可选实施例中，光源装置包括背板，设置在背板上的电路基板，以及设置在电路基板上的miniLED单元，第一光源和第二光源中的miniLED单元各自独立驱动控制。在另一个具体的可选实施例中，光源装置可以是RGB三色封装灯，该RGB三色封装灯通过上述导光体向该面内开孔的区域提供白色光线、红色光线、绿色光线或蓝色光线。在另一个具体的可选实施例中，光源装置还可以是通过透明胶水固定的RGB三色芯片，该RGB三色芯片分别通过上述导光体向该面内开孔的区域提供红色光线、绿色光线或蓝色光线，其中胶水用来在固化后保护芯片，材质优选地可以选择为与导光体的材质比如PC折射率接近，比如是UV胶水，UV胶水材质的折射率和PC接近或者略小，以便更多光线的进入导光环，减少光线全反射。提供至面内开孔的区域的光线需要时白光，在光源装置为上述两种方式下，背光模组还包括位于该导光体之外区域的蓝色芯片以及设置于该光源装置上方的量子点发光膜片，具体的量子点发光膜片的位置为多层膜片203的最下方一层，灯板hole导光环之外的区域均采用蓝光芯片(导光环之外的区域)搭配量子点发光膜片以便背光在导光环之外的区域显示白光。本领域技术人员还可以根据本发明实施例原理设想出其他光源实现形式，本发明在此不受限制。\n\n[0054]如图2所述，上述背光模组包括还竖直设置的金属背板207，导光体202通过封胶208固定至竖直设置的金属背板207。封胶208的材料例如可以是无影胶(UVglue，简称为UV)或者硅胶等，其中，UV胶又称光敏胶、紫外光固化胶，无影胶是一种必须通过紫外线光照射才能固化的一类胶粘剂，它可以作为粘接剂使用，也可作为油漆、涂料、油墨等的胶料使用。UV是英文Ultraviolet Rays的缩写，即紫外光线。紫外线(UV)是肉眼看不见的，是可见光以外的一段电磁辐射，波长在10～400nm的范围。无影胶固化原理是UV固化材料中的光引发剂(或光敏剂)在紫外线的照射下吸收紫外光后产生活性自由基或阳离子，引发单体聚合、交联化学反应，使粘合剂在数秒钟内由液态转化为固态。\n\n[0055]本发明实施例还提供了一种背光模组的制作方法，如图3所示，包括如下步骤：\n\n[0056]S301：在背光模组设置一面内开孔；\n\n[0057]S302：在该面内开孔的孔壁处设置导光体；其中该导光体用于在预定条件下将该背光模组中的光源装置发出的光线提供至该面内开孔的区域。\n\n[0058]通过上述背光模组的制作方法，设置于背光模组面内开孔的孔壁处的导光体，在预定条件下，将光源装置发出的光线提供至该面内开孔的区域，相比于现有技术中，面内开孔仅仅作为其下方摄像装置的环境光的收发通道，而无光源提供亮度，上述实施例提供了一种应用于面内holeBLU结构并为hole(即上述面内开孔)区域提供光线控制的装置，现有技术中hole的作用仅是作为hole下方摄像头的环境光的收发通道，本发明实施例可以为hole区域提供光线，解决了现有技术中液晶显示装置的背光模组中的面内开孔无光源提供亮度的问题，从而实现在预定条件下具有亮度的背光模组的面内开孔，从而提供了更多的hole区域的场景应用。在BLU的hole处增加光源和导光装置，搭配panel后提升终端产品的应用场景和使用体验，从而提升了竞争力。该背光装置还可以搭配盲孔的cell，实现hole内显示。\n\n[0059]可选地，该预定条件包括位于该面内开孔下方的摄像装置处于关闭状态。\n\n[0060]本发明实施例还提供了一种显示装置，包括上述实施例中任一的背光模组，图4是根据本发明实施例的显示模组示意图，如图4所示，下部是背光模组，背光模组上方还包括自下而上依次设置的下偏光层104、TFT玻璃基板103、CF玻璃基板102、上偏光层101和CG玻璃401。\n\n[0061]在具体实施时，本发明主要适用于全面屏和无边框的显示面板，针对有机发光半导体(OrganicElectroluminesence Display，简称为OLED)显示面板，一般至少包括衬底基板、以及依次设置在衬底基板上的薄膜晶体管结构、阳极层、发光层、阴极层和封装层。另外还包括一些其它的膜层，例如，平坦化层、钝化层等，在此不做限定。薄膜晶体管层层叠设于衬底基板一侧表面，用于控制像素区域发光。具体地，薄膜晶体管层包括多个薄膜晶体管。每个薄膜晶体管包括形成于衬底基板上的栅电极、覆设于栅电极上的栅极绝缘层、形成于栅极绝缘层上的有源层、以及形成于有源层上的源电极与漏电极。可以理解，上述薄膜晶体管以底栅型为例进行说明，本发明在此不作限定，在其他一些实施例中，薄膜晶体管可以为顶栅型。\n\n[0062]如上所述，根据该实施方式的技术方案，通过在背光模组的开孔处增加光源和导光体，再搭配显示面板，提供了一种显示装置，其中当摄像头开启时，开孔附近的发光芯片关闭，关闭区域的范围以不影响摄像头成像即可，此时开孔仅用作摄像头的环境光收发通道。当摄像头不启动时，导光体附近的发光芯片可发出光线，搭配显示面板以支持开孔内的显示应用。根据本实施方式的技术方案，可提升终端产品的应用场景和使用体验，从而提高产品竞争力。\n\n[0063]进一步地，本发明实施例还提供了一种电子设备，该电子设备包括根据以上实施方式所述的显示装置。电子设备可以是以下之一：移动电话、平板、笔记本电脑、以及车载、工控、消费品显示装置。\n\n[0064]虽然结合附图描述了本发明的实施例，但是本领域技术人员可以在不脱离本发明的精神和范围的情况下作出各种修改和变型，这样的修改和变型均落入由所附权利要求所限定的范围之内。');
INSERT INTO `os_patent_instruction_text` VALUES (10838, 23892, '技术领域\n\n[0001]本申请涉及显示领域，尤其涉及一种背光模组及显示装置。\n\n背景技术\n\n[0002]柔性屏由于具有可弯曲、柔韧性佳的技术优势，受到包括手机、笔电等众多显示终端厂的青睐。常规液晶显示(Liquid Crystal Display，简称LCD)器件由于背光模组中胶铁框、导光板等部件的存在，无法实现较大程度的弯曲或可挠，阻碍了柔性液晶显示器的发展。\n\n[0003]因此，现有液晶显示器存在背光模组不可挠的问题，需要解决。\n\n发明内容\n\n[0004]本发明提供一种背光模组及显示装置，以改进现有液晶显示器存在背光模组不可挠的问题。\n\n[0005]为解决以上问题，本发明提供的技术方案如下：\n\n[0006]本发明提供一种背光模组，其包括：\n\n[0007]柔性基板；\n\n[0008]Mini-LED芯片，设置于所述柔性基板上；\n\n[0009]匀光扩散膜，设置于所述Mini-LED芯片上，所述匀光扩散膜包括液晶盒以及油墨层。\n\n[0010]在本发明提供的背光模组中，所述液晶盒所述液晶盒包括第一基板、第二基板、以及填充于所述第一基板和所述第二基板之间的聚合物网络液晶。\n\n[0011]在本发明提供的背光模组中，所述第一基板、所述第二基板的厚度为10-20微米，所述液晶盒的厚度为30-50微米。\n\n[0012]在本发明提供的背光模组中，所述油墨层包括油墨点，所述油墨点设置于所述Mini-LED芯片上方，且与所述Mini-LED芯片一一对应。\n\n[0013]在本发明提供的背光模组中，所述油墨点的尺寸为所述Mini-LED芯片尺寸的2-5倍。\n\n[0014]在本发明提供的背光模组中，所述油墨层的厚度为10-20微米。\n\n[0015]在本发明提供的背光模组中，所述匀光扩散膜的厚度小于等于0.1毫米。\n\n[0016]在本发明提供的背光模组中，所述柔性基板包括柔性衬底、金属导线层、绝缘层、以及反射层。\n\n[0017]在本发明提供的背光模组中，所述背光模组的厚度小于等于0.2毫米。\n\n[0018]同时，本发明提供一种显示装置，其包括：\n\n[0019]液晶显示面板，\n\n[0020]本发明提供的背光模组，所述背光模组包括：柔性基板；Mini-LED芯片，设置于所述柔性基板上；匀光扩散膜，设置于所述Mini-LED芯片上，所述匀光扩散膜包括液晶盒以及油墨层。\n\n[0021]本发明提供了一种背光模组及显示装置，所述背光模组包括：柔性基板；Mini-LED芯片，设置于所述柔性基板上；匀光扩散膜，设置于所述Mini-LED芯片上，所述匀光扩散膜包括液晶盒以及油墨层。相比于现有技术，本发明实施例提供的背光模组去除了胶铁框、导光板，并以匀光扩散膜代替扩散板，提高了所述背光模组的柔韧性，减小了所述背光模组弯折时的内应力，突破了背光模组不可挠的瓶颈，解决了现有液晶显示器存在背光模组不可挠的问题，提高了液晶显示装置的弯折性能；同时，所述背光模组采用Mini-LED作为背光源，在Mini-LED芯片上设置由液晶盒和油墨层构成的匀光扩散膜，利用油墨层调节所述Mini-LED芯片的正面和侧面出光，同时利用液晶盒的高雾度混光特性，进一步对所述Mini-LED芯片发出的光线进行混匀，提高了所述背光模组的混光效果，提高了所述液晶显示装置的显示效果。\n\n附图说明\n\n[0022]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0023]图1为本发明实施例提供的背光模组的第一种结构示意图。\n\n[0024]图2为本发明实施例提供的背光模组的第二种结构示意图。\n\n[0025]图3为本发明实施例提供的匀光扩散膜的制备示意图。\n\n具体实施方式\n\n[0026]下面将结合本发明的具体实施方案，对本发明实施方案和/或实施例中的技术方案进行清楚、完整的描述，显而易见的，下面所描述的实施方案和/或实施例仅仅是本发明一部分实施方案和/或实施例，而不是全部的实施方案和/或实施例。基于本发明中的实施方案和/或实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施方案和/或实施例，都属于本发明保护范围。\n\n[0027]本发明所提到的方向用语，例如[上]、[下]、[左]、[右]、[前]、[后]、[内]、[外]、[侧]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明和理解本发明，而非用以限制本发明。术语“第一”、“第二”等仅用于描述目的，而不能理解为指示或是暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”等的特征可以明示或者隐含地包括一个或者更多个该特征。\n\n[0028]针对现有液晶显示器存在背光模组不可挠的问题，本发明提供一种背光模组可以缓解这个问题。\n\n[0029]在一种实施例中，请参照图1和图2，图1和图2分别示出了本发明实施例提供的背光模组的两种结构示意图。如图所示，所述背光模组包括：\n\n[0030]柔性基板110；\n\n[0031]Mini-LED(Light Emitting Diode，发光二极管)芯片120，设置于所述柔性基板110上；\n\n[0032]匀光扩散膜130，设置于所述Mini-LED芯片120上，所述匀光扩散膜包括液晶盒131以及油墨层132，所述匀光扩散膜130用于调节所述背光模组的出光均匀性；\n\n[0033]胶黏层140，设置于所述Mini-LED芯片120和所述匀光扩散膜130之间，用于粘结所述柔性基板110、所述Mini-LED芯片120和所述匀光扩散膜130。\n\n[0034]本实施例提供一种背光模组，所述背光模组包括：柔性基板；Mini-LED芯片，设置于所述柔性基板上；匀光扩散膜，设置于所述Mini-LED芯片上，所述匀光扩散膜包括液晶盒以及油墨层，所述匀光扩散膜130用于调节所述背光模组的出光均匀性；胶黏层，设置于所述Mini-LED芯片和所述匀光扩散膜之间，用于粘结所述柔性基板、所述Mini-LED芯片和所述匀光扩散膜。相比于现有技术，本发明实施例提供的背光模组去除了胶铁框、导光板，并以匀光扩散膜代替扩散板，提高了所述背光模组的柔韧性，减小了所述背光模组弯折时的内应力，突破了背光模组不可挠的瓶颈，解决了现有液晶显示器存在背光模组不可挠的问题，提高了液晶显示装置的弯折性能；同时，所述背光模组采用Mini-LED作为背光源，在Mini-LED芯片上设置由液晶盒和油墨层构成的匀光扩散膜，利用油墨层调节所述Mini-LED芯片的正面和侧面出光，同时利用液晶盒的高雾度混光特性，进一步对所述Mini-LED芯片发出的光线进行混匀，提高了所述背光模组的混光效果，提高了所述液晶显示装置的显示效果。\n\n[0035]请参照图1，本发明实施例提供的背光模组具体包括：\n\n[0036]柔性基板110，包括柔性衬底111、金属导线层112、绝缘层113、以及反射层114。\n\n[0037]所述柔性衬底112为柔性的绝缘性材料制备得到的可弯曲的衬底结构，具有可伸展、可弯曲或可折叠等特性，其材料可以是聚酰亚胺(PI)，可以是聚对苯二甲酸乙二醇酯(PET)，也可以是聚碳酸酯(PC)，还可以是其他柔性材料，在此不做限制。所述柔性衬底112的厚度为10-20微米。\n\n[0038]所述金属导线层112形成于所述柔性衬底111上，所述金属导线层112为单层金属薄膜经过图案化处理后得到的金属导线膜层。所述金属导线层112的材料包括金属铜、金属银等导电性良好的金属或其合金，优选金属铜。所述金属导线层112的厚度为10-20微米。相比于现有技术中柔性基板通常采用双层金属导线层，本发明实施例中采用单层金属薄膜形成金属导线层，减小了所述柔性基板110的厚度，从而减小了所述背光模组的厚度。\n\n[0039]所述绝缘层113覆盖所述金属导线层112和所述柔性衬底111，用于隔绝所述金属导线层112和所述反射层114，使所述金属导线层112和所述反射层114电性绝缘。所述绝缘层113的材料包括氧化硅(SiOx)、氮化硅(SiNx)，所述绝缘层的厚度为小于等于1微米。\n\n[0040]所述反射层114平铺于所述绝缘层113上，所述反射层114的材料为具有高反射率(反射率超过90％)的金属或合金，优选金属铝或金属银，所述反射层114的厚度为小于等于1微米。\n\n[0041]由所述柔性衬底111、所述金属导线层112、所述绝缘层113、以及所述反射层114构成的所述柔性基板，其厚度小于等于30微米，所述柔性基板保证了所述背光模组的柔韧性，同时相对于现有技术，减小了背光模组的厚度，进一步提高了所述背光模组的柔韧性。\n\n[0042]所述Mini-LED芯片120呈阵列均匀的设置于所述柔性基板110上，所述Mini-LED芯片120发出白色光线，为所述背光模组提供光源，所述LED芯片120的直径为300-500微米，所述Mini-LED芯片120的厚度小于等于20微米。\n\n[0043]所述Mini-LED芯片120包括三色Mini-LED芯片，即包括红光Mini-LED芯片、绿光Mini-LED芯片和蓝光Mini-LED芯片，红光Mini-LED芯片、绿光Mini-LED芯片和蓝光Mini-LED芯片混合为所述背光模组提供白色光源。所述Mini-LED芯片包括基板层、以及在基板层上依次层叠设置的本征层、N型氮化镓层、多量子阱层、P型氮化镓层、绝缘层、电流扩散层、保护层、以及N型和P型电极层。基板层一般为蓝宝石基板，多量子阱层设置于N型氮化镓层和P型氮化镓层之间，多量子阱层一般为多层交叠的氮化铟镓层和氮化镓层组成，多量子阱层决定了Mini-LED芯片的发光颜色，绝缘层和保护层一般为氧化硅或氮化硅等绝缘材料层，电流扩散层的材料一般为透明的氧化铟锡，也可以是石墨烯或其他金属，N型和P型电极层为铂、金、镍、铬等金属中的一种或其合金。\n\n[0044]所述Mini-LED芯片120也可以仅包括单色蓝光Mini-LED芯片，所述蓝光Mini-LED芯片包括蓝光Mini-LED和依次覆盖于蓝光Mini-LED上的封装胶层、荧光粉胶层、量子点胶层和阻隔水氧层。封装胶层是由防硫化剂、硅橡胶、硅树脂中的一种或多种材料制成。荧光粉胶层是荧光粉分散于透明胶体中得到的，透明胶体为硅胶、聚甲基丙烯酸甲酯、聚碳酸酯或聚苯乙烯的一种或多种，荧光粉的发光波长为450-600纳米，从而将蓝光Mini-LED发出的蓝光转换为白光。量子点胶层是量子点微球分散于透明胶体中得到的，量子点微球的平均粒径范围为0.1-100微米，发光波长的范围为500-750纳米。阻隔水氧层的材料为硅胶、硅橡胶、硅树脂、聚甲基丙烯酸甲酯、聚乙烯醇或环氧树脂中的一种或多种。\n\n[0045]所述匀光扩散膜130，设置于所述Mini-LED芯片120上，所述匀光扩散膜130包括液晶盒131以及油墨层132。所述油墨层132可以设置于所述液晶盒131靠近所述Mini-LED芯片120的一侧，如图1所示；所述油墨层132也可以设置于所述液晶盒131远离所述Mini-LED芯片120的一侧，如图2所示。\n\n[0046]所述油墨层132包括呈阵列设置的油墨点，所述油墨点设置于所述Mini-LED芯片120的正上方，且与所述Mini-LED芯片一一对应。所述油墨点的尺寸为所述Mini-LED芯片120尺寸的2-5倍。\n\n[0047]所述Mini-LED芯片120作为所述背光模组的光源，发出的光线在所述Mini-LED芯片120的中心位置处最强，且所述光线的强度在远离所述Mini-LED芯片120中心的方向上逐渐减弱，这就造成了背光模组出亮度不均。本发明实施例所述通过在所述Mini-LED芯片120的正上方设置所述油墨点，且所述油墨点的尺寸为所述Mini-LED芯片120的2-5倍，所述油墨点可以很好反射或吸收所述Mini-LED芯片120中心发出的光线，降低所述Mini-LED芯片120中心光线的强度，提高所述Mini-LED芯片120边缘的出光强度，从而起到使所述背光模组均匀出光的作用。\n\n[0048]所述油墨点的形状和尺寸均相同。所述油墨点的形状为圆形、方形、或其他规则或不规则的任意形状，优选所述油墨点的形状与所述Mini-LED芯片的形状相同。所述油墨点的形状设置得与所述Mini-LED芯片的形状相同，能够更加均匀有效的抑制所述Mini-LED芯片的正面光线，提升所述Mini-LED芯片的边缘出光比例，更好的实现所述背光模组的均匀出光。\n\n[0049]所述油墨层132包括树脂、钛白粉、稀释剂、胶黏剂等材料，以保证油墨与所述液晶盒131具有较好的结合力，同时使油墨有较好的流动加工特性及较高的反射率。所述油墨层的厚度为10-20微米。\n\n[0050]所述液晶盒131包括相对设置的第一基板1311、第二基板1312、以及填充于所述第一基板1311和所述第二基板1312之间的聚合物网络液晶1313。所述液晶盒131的厚度为30-50微米，具体可根据所述Mini-LED芯片120的混光距离以及所述液晶盒131的雾度进行设计，所述液晶盒131的厚度越大，所述液晶盒131的雾度越大，对所述Mini-LED芯片120的光线的调节精度越高。\n\n[0051]所述第一基板1311为阵列基板，包括第一柔性衬底、薄膜晶体管电路层、以及第一驱动电极层，所述薄膜晶体管层设置于所述第一柔性衬底靠近所述聚合物网络液晶1313的一侧，所述第一驱动电极层设置于所述薄膜晶体管电路层靠近所述聚合物网络液晶的一侧。所述第一柔性衬底提高了所述第一基板1311的柔韧性，从而提高了所述匀光扩散膜130的柔韧性，进而提高了所述背光模组的柔韧性。所述薄膜晶体管电路层包括薄膜晶体管以及信号线，所述薄膜晶体管和所述信号线共同构成薄膜晶体管电路，所述薄膜晶体管电路用于驱动所述聚合物网络液晶1313进行偏转，从而调节所述液晶盒131的雾度；所述第一驱动电极层包括第一驱动电极。所述第一基板1311的厚度为10-20微米，保证了所述匀光扩散膜130的薄化设计。\n\n[0052]所述第二基板1312包括第二柔性衬底和第二驱动电极层，所述第二驱动电极层设置于所述第二衬底靠近所述聚合物网络液晶1313的一侧，所述第二驱动电极层包括第二驱动电极，所述第二驱动电极于所述第一驱动电极相对设置。所述第二柔性衬底提高了所述第二基板1312的柔韧性，从而提高了所述匀光扩散膜130的柔韧性，进而提高了所述背光模组的柔韧性。所述第一驱动电极用于接收第一驱动信号，所述第二驱动电极用于接收第二驱动信号，从而在所述第一驱动电极和所述第二驱动电极之间形成电场，所述聚合物网络液晶1313在所述电场的作用下进行偏转，从而调节所述液晶盒131的雾度。所述第二基板1312的厚度为为10-20微米，保证了所述匀光扩散膜130的薄化设计。\n\n[0053]在本发明提供的实施例中，可以是所述第一基板1311位于图中所述聚合物网络液晶上方，且所述第二基板1312位于图中所述聚合物网络液晶下方，如图1所示；也可以是所述第一基板1311位于图中所述聚合物网络液晶下方，且所述第二基板1312位于图中所述聚合物网络液晶上方。\n\n[0054]所述液晶盒131通过所述第一基板和所述第二基板形成电场，所述电场驱动位于所述第一基板和所述第二基板之间的所述聚合物网络液晶1313进行偏转，从而调节所述液晶盒131的雾度，所述液晶盒131的高雾度将所述Mini-LED芯片发出的光线进一步混匀，进一步调节所述Mini-LED芯片的出光均匀性，更好的实现所述背光模组的均匀出光。\n\n[0055]当所述聚合物网络液晶1313为正性液晶时，所述第一驱动电极和所述第二驱动电极之间无电场作用时，所述聚合物液晶1313平行于所述第一基板和所述第二基板排列，所述液晶盒131的遮光性能最好；分别对所述第一驱动电极二和所述第二驱动电极输入驱动信号，使所述第一驱动电极和所述第二驱动电极之间形成电场，所述聚合物液晶1313在所述电场的作用下向垂直于所述第一基板和所述第二基板的方向偏转，所述电场的强度越大，偏转的角度越大，形成一定偏转角度的所述聚合物网络液晶1313对穿过所述液晶盒131的光线具有折射作用，从而可以调节穿过所述液晶盒131的光线的均匀性。\n\n[0056]通过控制所述第一驱动电极和所述第二驱动电极的输入信号，控制所述聚合物网络液晶1313的偏转角度，从而调节所述背光模组的出光均匀性。对于所述液晶盒131的入射光线较强的区域，所述第一驱动电极输入相对较低的电信号，使该区域内的所述电场强度较小，所述聚合物网络液晶1313的偏转角度较小，所述液晶盒131对所述入射光线的折射率较大，从而降低该区域内的正面出光强度；对于所述液晶盒131的入射光线较弱的区域，所述第一驱动电极输入相对较高的电信号，使该区域内的所述电场强度较强，所述聚合物网络液晶1313的偏转角度较大，所述液晶盒131对所述入射光线的折射率较小，从而保证该区域内的正面出光强度。\n\n[0057]同时，通过控制所述第一驱动电极和所述第二驱动电极的输入信号，控制所述聚合物网络液晶1313的偏转角度，可以整体控制所述匀光扩散膜130的透光强度，从而调节所述背光模组的出光强度。\n\n[0058]当所述聚合物网络液晶1313为负性液晶时，所述第一驱动电极和所述第二驱动电极之间无电场作用时，所述聚合物液晶1313垂直于所述第一基板和所述第二基板排列，所述液晶盒131的透光性能最好；分别对所述第一驱动电极二和所述第二驱动电极输入驱动信号，使所述第一驱动电极和所述第二驱动电极之间形成电场，所述聚合物液晶1313在所述电场的作用下向平行于所述第一基板和所述第二基板的方向偏转，所述电场的强度越大，偏转的角度越大。通过控制所述第一驱动电极和所述第二驱动电极的输入信号，可以控制所述聚合物网络液晶1313的偏转角度，从而调节所述背光模组的出光均匀性。其具体原理可参照正性聚合物网络液晶，在此不再赘述。\n\n[0059]由所述液晶盒131和所述油墨层132构成的所述匀光扩散膜130，其厚度小于等于0.1毫米，实现了所述匀光扩散膜130的薄化设计，相比现有技术，大大减小了所述背光模组的厚度，实现了所述背光模组超薄化设计，减小了所述背光模组弯折时的内应力，突破了背光模组不可挠的瓶颈，解决了现有Mini-LED显示器存在背光模组不可挠的问题；同时，利用所述油墨层132调节所述Mini-LED芯片的正面和侧面出光，利用所述液晶盒131的高雾度混光特性，进一步对所述Mini-LED芯片发出的光线进行混匀，提高了所述背光模组的混光效果。\n\n[0060]胶黏层140，设置于所述Mini-LED芯片120和所述匀光扩散膜130之间，用于粘结所述柔性基板110、所述Mini-LED芯片120和所述匀光扩散膜130。所述胶黏层140的材料可以是OCA(Optically Clear Adhesive)光学胶，也可以是其他透明有机粘结材料。本发明实施例采用所述胶黏层140使所述匀光扩散膜130与所述柔性基板110、所述Mini-LED芯片120组合在一起，取代了传统背光模组中的胶铁框结构，大大提高了所述背光模组的柔韧性，减小了所述背光模组弯折时的内应力，突破了背光模组不可挠的瓶颈，解决了现有液晶显示器存在背光模组不可挠的问题，提高了所述液晶显示装置的弯折性能。\n\n[0061]同时，本发明实施例还提供了一种匀光扩散膜的制备方法，如图3所示，图3示出了本发明实施例提供的匀光扩散膜的制备方法示意图。所述制备方法包括：\n\n[0062]步骤S201、制备第一基板，具体步骤包括：\n\n[0063]提供第一玻璃基板，在所述第一玻璃基板上制备第一柔性衬底；在所述第一柔性衬底上制备薄膜晶体管电路层，具体包括制备薄膜晶体管的栅极、源极、漏极，以及扫描线、数据线、电源线，可参照现有制备薄膜晶体管电路的技术工艺进行制备，所述薄膜晶体管可以是单晶硅薄膜晶体管，也可以是低温多晶硅薄膜晶体管，还可以是金属氧化物薄膜晶体管；在所述薄膜晶体管电路层上制备第一驱动电极层；所述第一基板的厚度为10-20微米。\n\n[0064]步骤S202、制备第二基板，具体步骤包括：\n\n[0065]提供第二玻璃基板，在所述第二玻璃基板上制备第二柔性衬底；在所述第二柔性衬底上制备平坦层；在所述平坦层上制备第二驱动电极；所述第二基板的厚度为10-20微米。\n\n[0066]步骤S203、将所述第一基板和所述第二基板进行对合，并在所述第一基板和所述第二基板之间注入液晶。具体步骤包括：\n\n[0067]在所述第一基板上涂布框胶，并通过加热工艺使所述框胶固化；在所述框胶内注入聚合物网络液晶；将所述第二基板与所述第一基板进行对合，形成液晶盒；所述液晶盒的厚度为30-50微米。\n\n[0068]也可以采用其他液晶盒对合技术。\n\n[0069]步骤S204、采用激光剥离工艺剥离所述第二玻璃基板。\n\n[0070]步骤S205、制备油墨层。具体步骤包括：\n\n[0071]在所述第二柔性衬底远离所述第一基板的一侧，采用油墨丝印工艺印刷油墨点，所述油墨点在所述第二柔性衬底上呈阵列分布，所述油墨点的位置与Mini-LED芯片的位置一一对应，所述油墨点的尺寸为所述Mini-LED芯片尺寸的2-5倍；通过烘烤工艺对所述油墨点进行固化，形成油墨层。\n\n[0072]步骤S206、采用激光剥离工艺剥离所述第一玻璃基板，得到所述匀光扩散膜，所述匀光扩散膜的厚度小于等于0.1毫米。\n\n[0073]本实施例提供了一种匀光扩散膜的制备方法，通过以玻璃基板为载体制备液晶盒，最后去除玻璃基板，得到厚度小于等于0.1毫米的所述匀光扩散膜，实现了所述匀光扩散膜130的薄化设计，将所述匀光扩散膜应用于背光模组，大大减小了背光模组的厚度，实现了背光模组超薄化设计，减小了背光模组弯折时的内应力，突破了背光模组不可挠的瓶颈，解决了现有液晶显示器存在背光模组不可挠的问题；同时，利用油墨层调节Mini-LED芯片的正面和侧面出光，利用所述液晶盒的高雾度混光特性，进一步对所述Mini-LED芯片发出的光线进行混匀，提高了所述背光模组的混光效果。\n\n[0074]本发明实施例还提供了一种显示装置，所述显示装置包括：\n\n[0075]液晶显示面板，\n\n[0076]本发明实施例提供的背光模组，所述背光模组包括：柔性基板；Mini-LED芯片，设置于所述柔性基板上；匀光扩散膜，设置于所述Mini-LED芯片上，所述匀光扩散膜包括液晶盒以及油墨层，所述匀光扩散膜用于调节所述背光模组的出光均匀性；胶黏层，设置于所述Mini-LED芯片和所述匀光扩散膜之间，用于粘结所述柔性基板、所述Mini-LED芯片和所述匀光扩散膜。\n\n[0077]本发明实施例体统了一种显示装置，所述显示装置包括本发明实施例提供的背光模组，相比于现有技术，本发明实施例提供的背光模组去除了胶铁框、导光板，并以匀光扩散膜代替扩散板，提高了所述背光模组的柔韧性，减小了所述背光模组弯折时的内应力，突破了背光模组不可挠的瓶颈，解决了现有液晶显示器存在背光模组不可挠的问题，提高了所述显示装置的弯折性能；同时，所述背光模组采用Mini-LED作为背光源，在Mini-LED芯片上设置由液晶盒和油墨层构成的匀光扩散膜，利用油墨层调节所述Mini-LED芯片的正面和侧面出光，同时利用液晶盒的高雾度混光特性，进一步对所述Mini-LED芯片发出的光线进行混匀，提高了所述背光模组的混光效果，提高了所述显示装置的显示效果。\n\n[0078]在一种实施例中，所述第一基板、所述第二基板的厚度为10-20微米，所述液晶盒的厚度为30-50微米。\n\n[0079]在一种实施例中，所述油墨层包括油墨点，所述油墨点设置于所述Mini-LED芯片上方，且与所述Mini-LED芯片一一对应。\n\n[0080]在一种实施例中，所述油墨点的尺寸为所述Mini-LED芯片尺寸的2-5倍。\n\n[0081]在一种实施例中，所述油墨层的厚度为10-20微米。\n\n[0082]在一种实施例中，所述匀光扩散膜的厚度小于等于0.1毫米。\n\n[0083]在一种实施例中，所述柔性基板包括柔性衬底、金属导线层、绝缘层、以及反射层。\n\n[0084]在一种实施例中，所述背光模组的厚度小于等于0.2毫米。\n\n[0085]根据上述实施例可知：\n\n[0086]本发明实施例提供了一种背光模组及显示装置，所述背光模组包括：柔性基板；LED芯片，设置于所述柔性基板上；匀光扩散膜，设置于所述Mini-LED芯片上，所述匀光扩散膜包括液晶盒以及油墨层，所述匀光扩散膜用于调节所述背光模组的出光均匀性；胶黏层，设置于所述Mini-LED芯片和所述匀光扩散膜之间，用于粘结所述柔性基板、所述Mini-LED芯片和所述匀光扩散膜。相比于现有技术，本发明实施例提供的背光模组去除了胶铁框、导光板，并以匀光扩散膜代替扩散板，提高了所述背光模组的柔韧性，减小了所述背光模组弯折时的内应力，突破了背光模组不可挠的瓶颈，解决了现有液晶显示器存在背光模组不可挠的问题，提高了液晶显示装置的弯折性能；同时，所述背光模组采用Mini-LED作为背光源，在Mini-LED芯片上设置由液晶盒和油墨层构成的匀光扩散膜，利用油墨层调节所述Mini-LED芯片的正面和侧面出光，同时利用液晶盒的高雾度混光特性，进一步对所述Mini-LED芯片发出的光线进行混匀，提高了所述背光模组的混光效果，提高了所述液晶显示装置的显示效果。\n\n[0087]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本申请涉及显示领域，尤其涉及一种背光模组及显示装置。\n\n背景技术\n\n[0002]柔性屏由于具有可弯曲、柔韧性佳的技术优势，受到包括手机、笔电等众多显示终端厂的青睐。常规液晶显示(Liquid Crystal Display，简称LCD)器件由于背光模组中胶铁框、导光板等部件的存在，无法实现较大程度的弯曲或可挠，阻碍了柔性液晶显示器的发展。\n\n[0003]因此，现有液晶显示器存在背光模组不可挠的问题，需要解决。\n\n发明内容\n\n[0004]本发明提供一种背光模组及显示装置，以改进现有液晶显示器存在背光模组不可挠的问题。\n\n[0005]为解决以上问题，本发明提供的技术方案如下：\n\n[0006]本发明提供一种背光模组，其包括：\n\n[0007]柔性基板；\n\n[0008]Mini-LED芯片，设置于所述柔性基板上；\n\n[0009]匀光扩散膜，设置于所述Mini-LED芯片上，所述匀光扩散膜包括液晶盒以及油墨层。\n\n[0010]在本发明提供的背光模组中，所述液晶盒所述液晶盒包括第一基板、第二基板、以及填充于所述第一基板和所述第二基板之间的聚合物网络液晶。\n\n[0011]在本发明提供的背光模组中，所述第一基板、所述第二基板的厚度为10-20微米，所述液晶盒的厚度为30-50微米。\n\n[0012]在本发明提供的背光模组中，所述油墨层包括油墨点，所述油墨点设置于所述Mini-LED芯片上方，且与所述Mini-LED芯片一一对应。\n\n[0013]在本发明提供的背光模组中，所述油墨点的尺寸为所述Mini-LED芯片尺寸的2-5倍。\n\n[0014]在本发明提供的背光模组中，所述油墨层的厚度为10-20微米。\n\n[0015]在本发明提供的背光模组中，所述匀光扩散膜的厚度小于等于0.1毫米。\n\n[0016]在本发明提供的背光模组中，所述柔性基板包括柔性衬底、金属导线层、绝缘层、以及反射层。\n\n[0017]在本发明提供的背光模组中，所述背光模组的厚度小于等于0.2毫米。\n\n[0018]同时，本发明提供一种显示装置，其包括：\n\n[0019]液晶显示面板，\n\n[0020]本发明提供的背光模组，所述背光模组包括：柔性基板；Mini-LED芯片，设置于所述柔性基板上；匀光扩散膜，设置于所述Mini-LED芯片上，所述匀光扩散膜包括液晶盒以及油墨层。\n\n[0021]本发明提供了一种背光模组及显示装置，所述背光模组包括：柔性基板；Mini-LED芯片，设置于所述柔性基板上；匀光扩散膜，设置于所述Mini-LED芯片上，所述匀光扩散膜包括液晶盒以及油墨层。相比于现有技术，本发明实施例提供的背光模组去除了胶铁框、导光板，并以匀光扩散膜代替扩散板，提高了所述背光模组的柔韧性，减小了所述背光模组弯折时的内应力，突破了背光模组不可挠的瓶颈，解决了现有液晶显示器存在背光模组不可挠的问题，提高了液晶显示装置的弯折性能；同时，所述背光模组采用Mini-LED作为背光源，在Mini-LED芯片上设置由液晶盒和油墨层构成的匀光扩散膜，利用油墨层调节所述Mini-LED芯片的正面和侧面出光，同时利用液晶盒的高雾度混光特性，进一步对所述Mini-LED芯片发出的光线进行混匀，提高了所述背光模组的混光效果，提高了所述液晶显示装置的显示效果。\n\n附图说明\n\n[0022]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0023]图1为本发明实施例提供的背光模组的第一种结构示意图。\n\n[0024]图2为本发明实施例提供的背光模组的第二种结构示意图。\n\n[0025]图3为本发明实施例提供的匀光扩散膜的制备示意图。\n\n具体实施方式\n\n[0026]下面将结合本发明的具体实施方案，对本发明实施方案和/或实施例中的技术方案进行清楚、完整的描述，显而易见的，下面所描述的实施方案和/或实施例仅仅是本发明一部分实施方案和/或实施例，而不是全部的实施方案和/或实施例。基于本发明中的实施方案和/或实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施方案和/或实施例，都属于本发明保护范围。\n\n[0027]本发明所提到的方向用语，例如[上]、[下]、[左]、[右]、[前]、[后]、[内]、[外]、[侧]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明和理解本发明，而非用以限制本发明。术语“第一”、“第二”等仅用于描述目的，而不能理解为指示或是暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”等的特征可以明示或者隐含地包括一个或者更多个该特征。\n\n[0028]针对现有液晶显示器存在背光模组不可挠的问题，本发明提供一种背光模组可以缓解这个问题。\n\n[0029]在一种实施例中，请参照图1和图2，图1和图2分别示出了本发明实施例提供的背光模组的两种结构示意图。如图所示，所述背光模组包括：\n\n[0030]柔性基板110；\n\n[0031]Mini-LED(Light Emitting Diode，发光二极管)芯片120，设置于所述柔性基板110上；\n\n[0032]匀光扩散膜130，设置于所述Mini-LED芯片120上，所述匀光扩散膜包括液晶盒131以及油墨层132，所述匀光扩散膜130用于调节所述背光模组的出光均匀性；\n\n[0033]胶黏层140，设置于所述Mini-LED芯片120和所述匀光扩散膜130之间，用于粘结所述柔性基板110、所述Mini-LED芯片120和所述匀光扩散膜130。\n\n[0034]本实施例提供一种背光模组，所述背光模组包括：柔性基板；Mini-LED芯片，设置于所述柔性基板上；匀光扩散膜，设置于所述Mini-LED芯片上，所述匀光扩散膜包括液晶盒以及油墨层，所述匀光扩散膜130用于调节所述背光模组的出光均匀性；胶黏层，设置于所述Mini-LED芯片和所述匀光扩散膜之间，用于粘结所述柔性基板、所述Mini-LED芯片和所述匀光扩散膜。相比于现有技术，本发明实施例提供的背光模组去除了胶铁框、导光板，并以匀光扩散膜代替扩散板，提高了所述背光模组的柔韧性，减小了所述背光模组弯折时的内应力，突破了背光模组不可挠的瓶颈，解决了现有液晶显示器存在背光模组不可挠的问题，提高了液晶显示装置的弯折性能；同时，所述背光模组采用Mini-LED作为背光源，在Mini-LED芯片上设置由液晶盒和油墨层构成的匀光扩散膜，利用油墨层调节所述Mini-LED芯片的正面和侧面出光，同时利用液晶盒的高雾度混光特性，进一步对所述Mini-LED芯片发出的光线进行混匀，提高了所述背光模组的混光效果，提高了所述液晶显示装置的显示效果。\n\n[0035]请参照图1，本发明实施例提供的背光模组具体包括：\n\n[0036]柔性基板110，包括柔性衬底111、金属导线层112、绝缘层113、以及反射层114。\n\n[0037]所述柔性衬底112为柔性的绝缘性材料制备得到的可弯曲的衬底结构，具有可伸展、可弯曲或可折叠等特性，其材料可以是聚酰亚胺(PI)，可以是聚对苯二甲酸乙二醇酯(PET)，也可以是聚碳酸酯(PC)，还可以是其他柔性材料，在此不做限制。所述柔性衬底112的厚度为10-20微米。\n\n[0038]所述金属导线层112形成于所述柔性衬底111上，所述金属导线层112为单层金属薄膜经过图案化处理后得到的金属导线膜层。所述金属导线层112的材料包括金属铜、金属银等导电性良好的金属或其合金，优选金属铜。所述金属导线层112的厚度为10-20微米。相比于现有技术中柔性基板通常采用双层金属导线层，本发明实施例中采用单层金属薄膜形成金属导线层，减小了所述柔性基板110的厚度，从而减小了所述背光模组的厚度。\n\n[0039]所述绝缘层113覆盖所述金属导线层112和所述柔性衬底111，用于隔绝所述金属导线层112和所述反射层114，使所述金属导线层112和所述反射层114电性绝缘。所述绝缘层113的材料包括氧化硅(SiOx)、氮化硅(SiNx)，所述绝缘层的厚度为小于等于1微米。\n\n[0040]所述反射层114平铺于所述绝缘层113上，所述反射层114的材料为具有高反射率(反射率超过90％)的金属或合金，优选金属铝或金属银，所述反射层114的厚度为小于等于1微米。\n\n[0041]由所述柔性衬底111、所述金属导线层112、所述绝缘层113、以及所述反射层114构成的所述柔性基板，其厚度小于等于30微米，所述柔性基板保证了所述背光模组的柔韧性，同时相对于现有技术，减小了背光模组的厚度，进一步提高了所述背光模组的柔韧性。\n\n[0042]所述Mini-LED芯片120呈阵列均匀的设置于所述柔性基板110上，所述Mini-LED芯片120发出白色光线，为所述背光模组提供光源，所述LED芯片120的直径为300-500微米，所述Mini-LED芯片120的厚度小于等于20微米。\n\n[0043]所述Mini-LED芯片120包括三色Mini-LED芯片，即包括红光Mini-LED芯片、绿光Mini-LED芯片和蓝光Mini-LED芯片，红光Mini-LED芯片、绿光Mini-LED芯片和蓝光Mini-LED芯片混合为所述背光模组提供白色光源。所述Mini-LED芯片包括基板层、以及在基板层上依次层叠设置的本征层、N型氮化镓层、多量子阱层、P型氮化镓层、绝缘层、电流扩散层、保护层、以及N型和P型电极层。基板层一般为蓝宝石基板，多量子阱层设置于N型氮化镓层和P型氮化镓层之间，多量子阱层一般为多层交叠的氮化铟镓层和氮化镓层组成，多量子阱层决定了Mini-LED芯片的发光颜色，绝缘层和保护层一般为氧化硅或氮化硅等绝缘材料层，电流扩散层的材料一般为透明的氧化铟锡，也可以是石墨烯或其他金属，N型和P型电极层为铂、金、镍、铬等金属中的一种或其合金。\n\n[0044]所述Mini-LED芯片120也可以仅包括单色蓝光Mini-LED芯片，所述蓝光Mini-LED芯片包括蓝光Mini-LED和依次覆盖于蓝光Mini-LED上的封装胶层、荧光粉胶层、量子点胶层和阻隔水氧层。封装胶层是由防硫化剂、硅橡胶、硅树脂中的一种或多种材料制成。荧光粉胶层是荧光粉分散于透明胶体中得到的，透明胶体为硅胶、聚甲基丙烯酸甲酯、聚碳酸酯或聚苯乙烯的一种或多种，荧光粉的发光波长为450-600纳米，从而将蓝光Mini-LED发出的蓝光转换为白光。量子点胶层是量子点微球分散于透明胶体中得到的，量子点微球的平均粒径范围为0.1-100微米，发光波长的范围为500-750纳米。阻隔水氧层的材料为硅胶、硅橡胶、硅树脂、聚甲基丙烯酸甲酯、聚乙烯醇或环氧树脂中的一种或多种。\n\n[0045]所述匀光扩散膜130，设置于所述Mini-LED芯片120上，所述匀光扩散膜130包括液晶盒131以及油墨层132。所述油墨层132可以设置于所述液晶盒131靠近所述Mini-LED芯片120的一侧，如图1所示；所述油墨层132也可以设置于所述液晶盒131远离所述Mini-LED芯片120的一侧，如图2所示。\n\n[0046]所述油墨层132包括呈阵列设置的油墨点，所述油墨点设置于所述Mini-LED芯片120的正上方，且与所述Mini-LED芯片一一对应。所述油墨点的尺寸为所述Mini-LED芯片120尺寸的2-5倍。\n\n[0047]所述Mini-LED芯片120作为所述背光模组的光源，发出的光线在所述Mini-LED芯片120的中心位置处最强，且所述光线的强度在远离所述Mini-LED芯片120中心的方向上逐渐减弱，这就造成了背光模组出亮度不均。本发明实施例所述通过在所述Mini-LED芯片120的正上方设置所述油墨点，且所述油墨点的尺寸为所述Mini-LED芯片120的2-5倍，所述油墨点可以很好反射或吸收所述Mini-LED芯片120中心发出的光线，降低所述Mini-LED芯片120中心光线的强度，提高所述Mini-LED芯片120边缘的出光强度，从而起到使所述背光模组均匀出光的作用。\n\n[0048]所述油墨点的形状和尺寸均相同。所述油墨点的形状为圆形、方形、或其他规则或不规则的任意形状，优选所述油墨点的形状与所述Mini-LED芯片的形状相同。所述油墨点的形状设置得与所述Mini-LED芯片的形状相同，能够更加均匀有效的抑制所述Mini-LED芯片的正面光线，提升所述Mini-LED芯片的边缘出光比例，更好的实现所述背光模组的均匀出光。\n\n[0049]所述油墨层132包括树脂、钛白粉、稀释剂、胶黏剂等材料，以保证油墨与所述液晶盒131具有较好的结合力，同时使油墨有较好的流动加工特性及较高的反射率。所述油墨层的厚度为10-20微米。\n\n[0050]所述液晶盒131包括相对设置的第一基板1311、第二基板1312、以及填充于所述第一基板1311和所述第二基板1312之间的聚合物网络液晶1313。所述液晶盒131的厚度为30-50微米，具体可根据所述Mini-LED芯片120的混光距离以及所述液晶盒131的雾度进行设计，所述液晶盒131的厚度越大，所述液晶盒131的雾度越大，对所述Mini-LED芯片120的光线的调节精度越高。\n\n[0051]所述第一基板1311为阵列基板，包括第一柔性衬底、薄膜晶体管电路层、以及第一驱动电极层，所述薄膜晶体管层设置于所述第一柔性衬底靠近所述聚合物网络液晶1313的一侧，所述第一驱动电极层设置于所述薄膜晶体管电路层靠近所述聚合物网络液晶的一侧。所述第一柔性衬底提高了所述第一基板1311的柔韧性，从而提高了所述匀光扩散膜130的柔韧性，进而提高了所述背光模组的柔韧性。所述薄膜晶体管电路层包括薄膜晶体管以及信号线，所述薄膜晶体管和所述信号线共同构成薄膜晶体管电路，所述薄膜晶体管电路用于驱动所述聚合物网络液晶1313进行偏转，从而调节所述液晶盒131的雾度；所述第一驱动电极层包括第一驱动电极。所述第一基板1311的厚度为10-20微米，保证了所述匀光扩散膜130的薄化设计。\n\n[0052]所述第二基板1312包括第二柔性衬底和第二驱动电极层，所述第二驱动电极层设置于所述第二衬底靠近所述聚合物网络液晶1313的一侧，所述第二驱动电极层包括第二驱动电极，所述第二驱动电极于所述第一驱动电极相对设置。所述第二柔性衬底提高了所述第二基板1312的柔韧性，从而提高了所述匀光扩散膜130的柔韧性，进而提高了所述背光模组的柔韧性。所述第一驱动电极用于接收第一驱动信号，所述第二驱动电极用于接收第二驱动信号，从而在所述第一驱动电极和所述第二驱动电极之间形成电场，所述聚合物网络液晶1313在所述电场的作用下进行偏转，从而调节所述液晶盒131的雾度。所述第二基板1312的厚度为为10-20微米，保证了所述匀光扩散膜130的薄化设计。\n\n[0053]在本发明提供的实施例中，可以是所述第一基板1311位于图中所述聚合物网络液晶上方，且所述第二基板1312位于图中所述聚合物网络液晶下方，如图1所示；也可以是所述第一基板1311位于图中所述聚合物网络液晶下方，且所述第二基板1312位于图中所述聚合物网络液晶上方。\n\n[0054]所述液晶盒131通过所述第一基板和所述第二基板形成电场，所述电场驱动位于所述第一基板和所述第二基板之间的所述聚合物网络液晶1313进行偏转，从而调节所述液晶盒131的雾度，所述液晶盒131的高雾度将所述Mini-LED芯片发出的光线进一步混匀，进一步调节所述Mini-LED芯片的出光均匀性，更好的实现所述背光模组的均匀出光。\n\n[0055]当所述聚合物网络液晶1313为正性液晶时，所述第一驱动电极和所述第二驱动电极之间无电场作用时，所述聚合物液晶1313平行于所述第一基板和所述第二基板排列，所述液晶盒131的遮光性能最好；分别对所述第一驱动电极二和所述第二驱动电极输入驱动信号，使所述第一驱动电极和所述第二驱动电极之间形成电场，所述聚合物液晶1313在所述电场的作用下向垂直于所述第一基板和所述第二基板的方向偏转，所述电场的强度越大，偏转的角度越大，形成一定偏转角度的所述聚合物网络液晶1313对穿过所述液晶盒131的光线具有折射作用，从而可以调节穿过所述液晶盒131的光线的均匀性。\n\n[0056]通过控制所述第一驱动电极和所述第二驱动电极的输入信号，控制所述聚合物网络液晶1313的偏转角度，从而调节所述背光模组的出光均匀性。对于所述液晶盒131的入射光线较强的区域，所述第一驱动电极输入相对较低的电信号，使该区域内的所述电场强度较小，所述聚合物网络液晶1313的偏转角度较小，所述液晶盒131对所述入射光线的折射率较大，从而降低该区域内的正面出光强度；对于所述液晶盒131的入射光线较弱的区域，所述第一驱动电极输入相对较高的电信号，使该区域内的所述电场强度较强，所述聚合物网络液晶1313的偏转角度较大，所述液晶盒131对所述入射光线的折射率较小，从而保证该区域内的正面出光强度。\n\n[0057]同时，通过控制所述第一驱动电极和所述第二驱动电极的输入信号，控制所述聚合物网络液晶1313的偏转角度，可以整体控制所述匀光扩散膜130的透光强度，从而调节所述背光模组的出光强度。\n\n[0058]当所述聚合物网络液晶1313为负性液晶时，所述第一驱动电极和所述第二驱动电极之间无电场作用时，所述聚合物液晶1313垂直于所述第一基板和所述第二基板排列，所述液晶盒131的透光性能最好；分别对所述第一驱动电极二和所述第二驱动电极输入驱动信号，使所述第一驱动电极和所述第二驱动电极之间形成电场，所述聚合物液晶1313在所述电场的作用下向平行于所述第一基板和所述第二基板的方向偏转，所述电场的强度越大，偏转的角度越大。通过控制所述第一驱动电极和所述第二驱动电极的输入信号，可以控制所述聚合物网络液晶1313的偏转角度，从而调节所述背光模组的出光均匀性。其具体原理可参照正性聚合物网络液晶，在此不再赘述。\n\n[0059]由所述液晶盒131和所述油墨层132构成的所述匀光扩散膜130，其厚度小于等于0.1毫米，实现了所述匀光扩散膜130的薄化设计，相比现有技术，大大减小了所述背光模组的厚度，实现了所述背光模组超薄化设计，减小了所述背光模组弯折时的内应力，突破了背光模组不可挠的瓶颈，解决了现有Mini-LED显示器存在背光模组不可挠的问题；同时，利用所述油墨层132调节所述Mini-LED芯片的正面和侧面出光，利用所述液晶盒131的高雾度混光特性，进一步对所述Mini-LED芯片发出的光线进行混匀，提高了所述背光模组的混光效果。\n\n[0060]胶黏层140，设置于所述Mini-LED芯片120和所述匀光扩散膜130之间，用于粘结所述柔性基板110、所述Mini-LED芯片120和所述匀光扩散膜130。所述胶黏层140的材料可以是OCA(Optically Clear Adhesive)光学胶，也可以是其他透明有机粘结材料。本发明实施例采用所述胶黏层140使所述匀光扩散膜130与所述柔性基板110、所述Mini-LED芯片120组合在一起，取代了传统背光模组中的胶铁框结构，大大提高了所述背光模组的柔韧性，减小了所述背光模组弯折时的内应力，突破了背光模组不可挠的瓶颈，解决了现有液晶显示器存在背光模组不可挠的问题，提高了所述液晶显示装置的弯折性能。\n\n[0061]同时，本发明实施例还提供了一种匀光扩散膜的制备方法，如图3所示，图3示出了本发明实施例提供的匀光扩散膜的制备方法示意图。所述制备方法包括：\n\n[0062]步骤S201、制备第一基板，具体步骤包括：\n\n[0063]提供第一玻璃基板，在所述第一玻璃基板上制备第一柔性衬底；在所述第一柔性衬底上制备薄膜晶体管电路层，具体包括制备薄膜晶体管的栅极、源极、漏极，以及扫描线、数据线、电源线，可参照现有制备薄膜晶体管电路的技术工艺进行制备，所述薄膜晶体管可以是单晶硅薄膜晶体管，也可以是低温多晶硅薄膜晶体管，还可以是金属氧化物薄膜晶体管；在所述薄膜晶体管电路层上制备第一驱动电极层；所述第一基板的厚度为10-20微米。\n\n[0064]步骤S202、制备第二基板，具体步骤包括：\n\n[0065]提供第二玻璃基板，在所述第二玻璃基板上制备第二柔性衬底；在所述第二柔性衬底上制备平坦层；在所述平坦层上制备第二驱动电极；所述第二基板的厚度为10-20微米。\n\n[0066]步骤S203、将所述第一基板和所述第二基板进行对合，并在所述第一基板和所述第二基板之间注入液晶。具体步骤包括：\n\n[0067]在所述第一基板上涂布框胶，并通过加热工艺使所述框胶固化；在所述框胶内注入聚合物网络液晶；将所述第二基板与所述第一基板进行对合，形成液晶盒；所述液晶盒的厚度为30-50微米。\n\n[0068]也可以采用其他液晶盒对合技术。\n\n[0069]步骤S204、采用激光剥离工艺剥离所述第二玻璃基板。\n\n[0070]步骤S205、制备油墨层。具体步骤包括：\n\n[0071]在所述第二柔性衬底远离所述第一基板的一侧，采用油墨丝印工艺印刷油墨点，所述油墨点在所述第二柔性衬底上呈阵列分布，所述油墨点的位置与Mini-LED芯片的位置一一对应，所述油墨点的尺寸为所述Mini-LED芯片尺寸的2-5倍；通过烘烤工艺对所述油墨点进行固化，形成油墨层。\n\n[0072]步骤S206、采用激光剥离工艺剥离所述第一玻璃基板，得到所述匀光扩散膜，所述匀光扩散膜的厚度小于等于0.1毫米。\n\n[0073]本实施例提供了一种匀光扩散膜的制备方法，通过以玻璃基板为载体制备液晶盒，最后去除玻璃基板，得到厚度小于等于0.1毫米的所述匀光扩散膜，实现了所述匀光扩散膜130的薄化设计，将所述匀光扩散膜应用于背光模组，大大减小了背光模组的厚度，实现了背光模组超薄化设计，减小了背光模组弯折时的内应力，突破了背光模组不可挠的瓶颈，解决了现有液晶显示器存在背光模组不可挠的问题；同时，利用油墨层调节Mini-LED芯片的正面和侧面出光，利用所述液晶盒的高雾度混光特性，进一步对所述Mini-LED芯片发出的光线进行混匀，提高了所述背光模组的混光效果。\n\n[0074]本发明实施例还提供了一种显示装置，所述显示装置包括：\n\n[0075]液晶显示面板，\n\n[0076]本发明实施例提供的背光模组，所述背光模组包括：柔性基板；Mini-LED芯片，设置于所述柔性基板上；匀光扩散膜，设置于所述Mini-LED芯片上，所述匀光扩散膜包括液晶盒以及油墨层，所述匀光扩散膜用于调节所述背光模组的出光均匀性；胶黏层，设置于所述Mini-LED芯片和所述匀光扩散膜之间，用于粘结所述柔性基板、所述Mini-LED芯片和所述匀光扩散膜。\n\n[0077]本发明实施例体统了一种显示装置，所述显示装置包括本发明实施例提供的背光模组，相比于现有技术，本发明实施例提供的背光模组去除了胶铁框、导光板，并以匀光扩散膜代替扩散板，提高了所述背光模组的柔韧性，减小了所述背光模组弯折时的内应力，突破了背光模组不可挠的瓶颈，解决了现有液晶显示器存在背光模组不可挠的问题，提高了所述显示装置的弯折性能；同时，所述背光模组采用Mini-LED作为背光源，在Mini-LED芯片上设置由液晶盒和油墨层构成的匀光扩散膜，利用油墨层调节所述Mini-LED芯片的正面和侧面出光，同时利用液晶盒的高雾度混光特性，进一步对所述Mini-LED芯片发出的光线进行混匀，提高了所述背光模组的混光效果，提高了所述显示装置的显示效果。\n\n[0078]在一种实施例中，所述第一基板、所述第二基板的厚度为10-20微米，所述液晶盒的厚度为30-50微米。\n\n[0079]在一种实施例中，所述油墨层包括油墨点，所述油墨点设置于所述Mini-LED芯片上方，且与所述Mini-LED芯片一一对应。\n\n[0080]在一种实施例中，所述油墨点的尺寸为所述Mini-LED芯片尺寸的2-5倍。\n\n[0081]在一种实施例中，所述油墨层的厚度为10-20微米。\n\n[0082]在一种实施例中，所述匀光扩散膜的厚度小于等于0.1毫米。\n\n[0083]在一种实施例中，所述柔性基板包括柔性衬底、金属导线层、绝缘层、以及反射层。\n\n[0084]在一种实施例中，所述背光模组的厚度小于等于0.2毫米。\n\n[0085]根据上述实施例可知：\n\n[0086]本发明实施例提供了一种背光模组及显示装置，所述背光模组包括：柔性基板；LED芯片，设置于所述柔性基板上；匀光扩散膜，设置于所述Mini-LED芯片上，所述匀光扩散膜包括液晶盒以及油墨层，所述匀光扩散膜用于调节所述背光模组的出光均匀性；胶黏层，设置于所述Mini-LED芯片和所述匀光扩散膜之间，用于粘结所述柔性基板、所述Mini-LED芯片和所述匀光扩散膜。相比于现有技术，本发明实施例提供的背光模组去除了胶铁框、导光板，并以匀光扩散膜代替扩散板，提高了所述背光模组的柔韧性，减小了所述背光模组弯折时的内应力，突破了背光模组不可挠的瓶颈，解决了现有液晶显示器存在背光模组不可挠的问题，提高了液晶显示装置的弯折性能；同时，所述背光模组采用Mini-LED作为背光源，在Mini-LED芯片上设置由液晶盒和油墨层构成的匀光扩散膜，利用油墨层调节所述Mini-LED芯片的正面和侧面出光，同时利用液晶盒的高雾度混光特性，进一步对所述Mini-LED芯片发出的光线进行混匀，提高了所述背光模组的混光效果，提高了所述液晶显示装置的显示效果。\n\n[0087]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10839, 23893, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种像素驱动电路及其驱动方法、显示面板。\n\n背景技术\n\n[0002]采用低温多晶硅技术制成的背板虽然可以使显示面板达到较高的像素密度，但由于硅类晶体管的漏电流较大，在显示面板使用低刷新频率时，显示面板的显示效果较差，影响显示品质。\n\n发明内容\n\n[0003]本申请实施例提供一种像素驱动电路及其驱动方法、显示面板，可以维持驱动晶体管的栅极电压稳定，降低所述驱动晶体管的源极或漏极对所述驱动晶体管栅极的影响，改善显示面板的显示效果。\n\n[0004]本申请实施例提供一种像素驱动电路，包括：发光器件、驱动晶体管以及补偿模块；所述补偿模块至少包括：初始化晶体管及补偿晶体管；\n\n[0005]所述初始化晶体管用于响应第一扫描信号并将电位可变信号传输至所述驱动晶体管的栅极，初始化所述驱动晶体管的栅极电压；\n\n[0006]所述补偿晶体管用于响应补偿控制信号并将具有补偿阈值电压的数据信号传输至所述驱动晶体管的栅极；\n\n[0007]其中，所述初始化晶体管与所述补偿晶体管的类型不同；所述电位可变信号在发光阶段动态补偿所述驱动晶体管的栅极电压。\n\n[0008]在一些实施例中，所述初始化晶体管为硅晶体管或氧化物晶体管的其中之一，所述补偿晶体管为硅晶体管或氧化物晶体管的其中另一。\n\n[0009]在一些实施例中，所述初始化晶体管为硅晶体管，所述补偿晶体管为氧化物晶体管。\n\n[0010]在一些实施例中，所述初始化晶体管为P型晶体管；所述补偿晶体管为N型晶体管。\n\n[0011]在一些实施例中，所述电位可变信号在所述初始化晶体管响应所述第一扫描信号、所述补偿晶体管响应所述补偿控制信号时为恒定低电平信号，在所述发光阶段为连续上升信号。\n\n[0012]在一些实施例中，所述像素驱动电路还包括数据写入模块，所述数据写入模块用于响应第二扫描信号并将所述数据信号传输至所述驱动晶体管的源极或漏极。\n\n[0013]在一些实施例中，所述像素驱动电路还包括存储模块，所述存储模块用于维持所述驱动晶体管的栅极电压。\n\n[0014]在一些实施例中，所述像素驱动电路还包括发光控制模块，所述发光控制模块用于响应发光控制信号控制所述发光器件发光。\n\n[0015]在一些实施例中，所述像素驱动电路还包括复位模块，所述复位模块用于响应第二扫描信号并将复位信号传输至所述发光器件的阳极。\n\n[0016]在一些实施例中，所述复位信号为恒定信号。\n\n[0017]在一些实施例中，所述发光器件包括有机发光二极管、次毫米发光二极管及微型发光二极管的其中一种。\n\n[0018]本申请还提供一种像素驱动电路的驱动方法，用于驱动所述的像素驱动电路，在第N帧周期内，所述驱动方法包括：\n\n[0019]初始化阶段，所述补偿模块的所述初始化晶体管响应所述第一扫描信号，所述电位可变信号传输至所述驱动晶体管的栅极，初始化所述驱动晶体管的栅极电压；\n\n[0020]补偿阶段，所述补偿模块的所述补偿晶体管响应所述补偿控制信号，将具有补偿阈值电压的数据信号传输至所述驱动晶体管的栅极，补偿所述驱动晶体管的阈值电压；\n\n[0021]所述发光阶段，所述驱动晶体管驱动所述发光器件发光，所述电位可变信号动态补偿所述驱动晶体管的栅极电压。\n\n[0022]在一些实施例中，所述电位可变信号在所述初始化阶段和所述补偿阶段为恒定信号，所述电位可变信号在所述发光阶段随补偿前的所述驱动晶体管的栅极电压连续上升或连续下降。\n\n[0023]本申请还提供一种显示面板，包括：多个像素及控制所述像素发光的像素驱动电路；所述像素驱动电路包括：形成所述像素的发光器件，被配置为向所述发光器件提供驱动电流的驱动晶体管，用于提供电位可变信号的电位可变信号线，初始化晶体管，以及，补偿晶体管；所述初始化晶体管和补偿晶体管具有不同材料的半导体层；\n\n[0024]所述补偿晶体管的栅极与补偿控制信号线连接，所述补偿晶体管的源极或漏极中的一者与所述驱动晶体管的栅极连接，源极或漏极中的另一者与所述驱动晶体管的源极或漏极中的一者连接；\n\n[0025]所述初始化晶体管的栅极与第一扫描信号线连接，所述初始化晶体管的源极或漏极中的一者与电位可变信号线连接，源极或漏极中的另一者与所述驱动晶体管的栅极连接。\n\n[0026]在一些实施例中，所述初始化晶体管和所述补偿晶体管的所述半导体层的载流子迁移率不同；所述初始化晶体管的所述半导体层的载流子迁移率大于所述补偿晶体管的所述半导体层的载流子迁移率；或，所述初始化晶体管的所述半导体层的载流子迁移率小于所述补偿晶体管的所述半导体层的载流子迁移率。\n\n[0027]在一些实施例中，所述像素驱动电路还包括：\n\n[0028]数据写入晶体管，所述数据写入晶体管的栅极与第二扫描信号线连接，所述数据写入晶体管的源极或漏极中的一者与数据信号线连接，源极或漏极中的另一者与所述驱动晶体管的源极或漏极中的一者连接；\n\n[0029]存储电容，所述存储电容的上极板与第一电压端连接，下极板与所述初始化晶体管的源极或漏极中连接所述驱动晶体管栅极的一者、所述补偿晶体管的源极或漏极中连接所述驱动晶体管栅极的一者及所述驱动晶体管的栅极连接。\n\n[0030]在一些实施例中，所述像素驱动电路还包括：\n\n[0031]第一开关晶体管，所述第一开关晶体管的栅极与发光控制信号线连接，所述第一开关晶体管的源极或漏极中的一者与第一电压端连接，源极或漏极中的另一者与所述驱动晶体管的源极或漏极中的一者连接；\n\n[0032]第二开关晶体管，所述第二开关晶体管的栅极与所述发光控制信号线连接，所述第二开关晶体管的源极或漏极中的一者所述驱动晶体管的源极或漏极中的一者连接，源极或漏极中的另一者与所述发光器件的阳极连接。\n\n[0033]在一些实施例中，所述像素驱动电路还包括：\n\n[0034]复位晶体管，所述复位晶体管的栅极与第二扫描信号线连接，所述复位晶体管的源极或漏极中的一者与复位信号线连接，源极或漏极中的另一者与所述发光器件的阳极连接，所述复位晶体管与所述初始化晶体管具有相同材料的半导体层。\n\n[0035]在一些实施例中，所述显示面板还包括位于所述像素驱动电路与所述发光器件之间的导电层，在俯视视角下，所述导电层与所述补偿晶体管的正投影重合，且所述导电层覆盖所述补偿晶体管。\n\n[0036]在一些实施例中，所述导电层的制备材料包括金、银、铜、锂、钠、钾、镁、铝、锌中的至少一种。\n\n[0037]本申请实施例提供的像素驱动电路及其驱动方法、显示面板，所述像素驱动电路包括：发光器件、驱动晶体管以及补偿模块；所述补偿模块至少包括：初始化晶体管及补偿晶体管；所述初始化晶体管用于响应第一扫描信号并将电位可变信号传输至所述驱动晶体管的栅极，初始化所述驱动晶体管的栅极电压；所述补偿晶体管用于响应补偿控制信号并将具有补偿阈值电压的数据信号传输至所述驱动晶体管的栅极；其中，所述初始化晶体管与所述补偿晶体管的类型不同；所述电位可变信号在发光阶段动态补偿所述驱动晶体管的栅极电压，以在所述发光阶段维持所述驱动晶体管的栅极电压稳定，降低所述驱动晶体管的源极或漏极对所述驱动晶体管栅极的影响，可以改善显示面板的显示效果。\n\n附图说明\n\n[0038]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0039]图1为本申请的实施例提供的像素驱动电路的原理图；\n\n[0040]图2A～图2B为本申请的实施例提供的像素驱动电路的结构示意图；\n\n[0041]图3A为图2A提供的像素驱动电路的工作时序图；\n\n[0042]图3B为图2B提供的像素驱动电路的工作时序图；\n\n[0043]图3C为本申请的实施例提供的电位可变信号及驱动晶体管栅极电压的工作时序图；\n\n[0044]图4A～图4C为本申请的实施例提供的显示面板的结构示意图；\n\n[0045]图5A～图5B为本申请的实施例提供的像素驱动电路的结构示意图。\n\n具体实施方式\n\n[0046]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0047]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0048]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0049]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0050]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0051]具体的，请参阅图1，其为本申请的实施例提供的像素驱动电路的原理图，如图2A～图2B，其为本申请的实施例提供的像素驱动电路的结构示意图；如图3A，其为图2A提供的像素驱动电路的工作时序图；如图3B，其为图2B提供的像素驱动电路的工作时序图；如图3C，其为本申请的实施例提供的电位可变信号及驱动晶体管栅极电压的工作时序图。\n\n[0052]本申请实施例提供一种像素驱动电路，包括：发光器件D1、驱动晶体管T1以及补偿模块100；所述补偿模块100至少包括：初始化晶体管T2及补偿晶体管T3；\n\n[0053]所述初始化晶体管T2用于响应第一扫描信号Scan1并将电位可变信号VI1传输至所述驱动晶体管T1的栅极，初始化所述驱动晶体管T1的栅极电压Vg；\n\n[0054]所述补偿晶体管T3用于响应补偿控制信号Scan3并将具有补偿阈值电压的数据信号Vdata传输至所述驱动晶体管T1的栅极；\n\n[0055]其中，所述初始化晶体管T2与所述补偿晶体管T3的类型不同；所述电位可变信号VI1在发光阶段t3动态补偿所述驱动晶体管T1的栅极电压Vg，以在所述发光阶段t3维持所述驱动晶体管T1的栅极电压Vg稳定，降低所述驱动晶体管T1的源极或漏极对所述驱动晶体管T1栅极的影响。\n\n[0056]进一步地，所述初始化晶体管T2为硅晶体管或氧化物晶体管的其中之一，所述补偿晶体管T3为硅晶体管或氧化物晶体管的其中另一。\n\n[0057]具体地，请继续参阅图2A～图2B及图3A～图3B，在所述发光阶段t3，利用所述补偿晶体管T3可减小所述驱动晶体管T1的源极或漏极(B点)中的一者对所述驱动晶体管T1栅极(Q点)电压Vg的影响。但所述补偿晶体管T3会存在一定的漏电流，为降低所述补偿晶体管T3的漏电流对所述驱动晶体管T1的影响，利用所述初始化晶体管T2的漏电流特性及所述电位可变信号VI1动态补偿因所述补偿晶体管T3的漏电流造成的对所述驱动晶体管T1的栅极电压Vg的影响，以使所述驱动晶体管T1的栅极电压Vg保持恒定，保证所述发光器件D1的稳定发光。更进一步地，可保证所述发光器件D1在任何刷新频率下均可实现稳定发光。\n\n[0058]更进一步地，所述初始化晶体管T2为氧化物晶体管，所述补偿晶体管T3为硅晶体管；但由于硅晶体管的漏电流要大于氧化物晶体管的漏电流，因此在所述初始化晶体管T2为氧化物晶体管，所述补偿晶体管T3为硅晶体管时，所述补偿晶体管T3的漏电流要大于所述初始化晶体管T2的漏电流，影响所述电位可变信号VI1对所述驱动晶体管T1的栅极电压Vg的补偿效果。\n\n[0059]因此，为提高对所述驱动晶体管T1的栅极电压Vg的补偿效果，所述初始化晶体管T2为硅晶体管，所述补偿晶体管T3为氧化物晶体管，利用所述补偿晶体管T3的漏电流小于所述初始化晶体管T2的漏电流的特性，降低所述驱动晶体管T1的源极或漏极(B点)中的一者对所述驱动晶体管T1栅极(Q点)电压Vg的影响，利用所述初始化晶体管T2具有较大的漏电流的特性，通过所述电位可变信号VI1降低所述补偿晶体管T3的漏电流对所述驱动晶体管T1的影响，以使所述驱动晶体管T1的栅极电压Vg保持恒定，保证所述发光器件D1的稳定发光。\n\n[0060]所述初始化晶体管T2及所述补偿晶体管T3可以为P型晶体管，也可为N型晶体管；进一步地，由于P型氧化物晶体管受目前P型氧化物材料的制约，制备出高质量的P型氧化物晶体管也受到制约，因此，在考虑现有技术的基础上，当所述初始化晶体管T2或所述补偿晶体管T3为氧化物晶体管时，选用N型氧化物晶体管。但在此并不用于限制本申请中的所述氧化物晶体管为N型晶体管，在本申请中所述氧化物晶体管也可为P型晶体管。\n\n[0061]其中，所述硅晶体管包括单晶硅晶体管、多晶硅晶体管、微晶硅晶体管、非晶硅或其他含硅的晶体管；所述氧化物晶体管包括含锌、铟、镓、锡或钛等金属及其氧化物的氧化物晶体管。进一步地，所述多晶硅晶体管包括低温多晶硅晶体管；所述氧化物晶体管包括含氧化锌、氧化锌锡、氧化锌铟、氧化铟、氧化钛、氧化铟镓锌、氧化铟锌锡等的氧化物晶体管。\n\n[0062]请继续参阅图1和图2A～图2B，所述像素驱动电路还包括数据写入模块200，所述数据写入模块200用于响应第二扫描信号Scan2并将所述数据信号Vdata传输至所述驱动晶体管T1的源极或漏极。\n\n[0063]其中，所述补偿晶体管T3采用与所述数据写入晶体管T4相同类型的晶体管时，所述补偿晶体管T3可直接利用所述第二扫描信号Scan2代替所述补偿控制信号Scan3。\n\n[0064]具体地，请参阅图2A～图2B，所述数据写入模块200包括数据写入晶体管T4，所述数据写入晶体管T4的栅极与所述第二扫描信号Scan2连接，所述数据信号Vdata传输至所述数据写入晶体管T4的第一极，所述数据写入晶体管T4的第二极与所述驱动晶体管T1的第一极连接。\n\n[0065]所述像素驱动电路还包括存储模块300，所述存储模块300用于维持所述驱动晶体管T1的栅极电压Vg。\n\n[0066]具体地，请参阅图2A～图2B，所述存储模块300包括存储电容C1，所述存储电容C1的一端与第一电压端Vdd连接，所述存储电容C1的另一端与所述驱动晶体管T1的栅极、所述初始化晶体管T2的第二极、所述补偿晶体管T3的第一极连接。具体地，所述存储电容C1的上极板与所述第一电压端Vdd连接，所述存储电容C2的下极板与所述驱动晶体管T1的栅极、所述初始化晶体管T2的第二极、所述补偿晶体管T3的第一极连接。\n\n[0067]所述像素驱动电路还包括发光控制模块400，所述发光控制模块400用于响应发光控制信号EM控制所述发光器件D1发光。\n\n[0068]具体地，请参阅图2A～图2B，所述发光控制模块400包括第一开关晶体管T5和第二开关晶体管T6；所述发光控制信号EM传输至所述第一开关晶体管T5的栅极与所述第二开关晶体管T6的栅极，所述第一开关晶体管T5的第一极与所述第一电压端Vdd连接，所述第一开关晶体管T5的第二极与所述驱动晶体管T1的第一极连接；所述第二开关晶体管T6的第一极与所述驱动晶体管T1的第二极连接，所述第二开关晶体管T6的第二极与所述发光器件D1的阳极连接。\n\n[0069]所述像素驱动电路还包括复位模块500，所述复位模块500用于响应第二扫描信号Scan2并将复位信号VI2传输至所述发光器件D1的阳极。\n\n[0070]具体地，请参阅图2A～图2B，所述复位模块500包括复位晶体管T7；所述第二扫描信号Scan2传输至所述复位晶体管T7的栅极，所述复位信号VI2传输至所述复位晶体管T7的第一极，所述复位晶体管T7的第二极与所述发光器件D1的阳极连接。\n\n[0071]其中，所述复位信号VI2为恒定信号；在所述发光阶段t3，可通过驱动芯片提供所需的所述电位可变信号VI1。\n\n[0072]所述复位晶体管T7与所述初始化晶体管T2的类型可以不同，也可相同。具体地，在图2A所示的像素驱动电路中，所述复位晶体管T7与所述初始化晶体管T2的类型不同；进一步地，所述复位晶体管T7与所述补偿晶体管T3的类型相同。而在图2B所示的像素驱动电路中，所述复位晶体管T7与所述初始化晶体管T2的类型相同；进一步地，所述复位晶体管T7与所述补偿晶体管T3的类型不同。\n\n[0073]所述发光器件D1包括有机发光二极管、次毫米发光二极管及微型发光二极管的其中一种。\n\n[0074]在图2A～图2B所示的像素驱动电路中，均以所述发光器件D1的阴极接第二电压端Vss为例；此外，所述发光器件D1亦可采用阳极接所述第一电压端Vdd的形式布置于所述像素驱动电路中，在此对其不再进行赘述。\n\n[0075]为区分晶体管中除栅极以外的源极与漏极，本申请的第一极可以为漏极或源极的一者，相应地，第二极为源极或漏极中的另一者。\n\n[0076]本申请还提供一种像素驱动电路的驱动方法，用于驱动所述像素驱动电路，在第N帧周期(N Frame)内，所述驱动方法包括：\n\n[0077]初始化阶段t1，所述补偿模块100的所述初始化晶体管T2响应第一扫描信号Scan1，所述电位可变信号VI1传输至所述驱动晶体管T1的栅极，初始化所述驱动晶体管T1的栅极电压Vg；\n\n[0078]补偿阶段t2，所述补偿模块100的所述补偿晶体管T3响应补偿控制信号Scan3，将具有补偿阈值电压的数据信号Vdata传输至所述驱动晶体管T1的栅极，补偿所述驱动晶体管T1的阈值电压；\n\n[0079]所述发光阶段t3，所述驱动晶体管T1驱动所述发光器件D1发光，所述电位可变信号VI1动态补偿所述驱动晶体管T1的栅极电压Vg。\n\n[0080]其中，所述电位可变信号VI1在所述初始化阶段t1和所述补偿阶段t2为恒定信号，所述电位可变信号VI1在所述发光阶段t3随补偿前的所述驱动晶体管T1的栅极电压Vg连续上升或连续下降。\n\n[0081]具体地，在所述发光阶段t3，由于所述驱动晶体管T1的栅极受所述驱动晶体管T1的源极或漏极(B点)的影响，所述驱动晶体管T1的栅极电压Vg会出现连续的变动，因此，为使所述驱动晶体管T1的栅极电压Vg维持稳定，在幅值上所述电位可变信号VI1与补偿前的所述驱动晶体管T1的栅极电压Vg成正比；在时序上，所述电位可变信号VI1随补偿前的所述驱动晶体管T1的栅极电压Vg的下降而连续上升，或随补偿前的所述驱动晶体管T1的栅极电压Vg的上升连续下降，以使所述驱动晶体管T1的栅极电压Vg在补偿后维持稳定。\n\n[0082]在所述发光阶段t3，可通过驱动芯片提供所需的所述电位可变信号VI1。所述复位信号VI2可与所述电位可变信号VI1在所述初始化阶段t1和所述补偿阶段t2时的幅值相等，也可不相等，在此对其不再进行赘述。\n\n[0083]下面将结合图2A～图2B及图3A～图3B详细描述利用所述驱动方法驱动所述像素驱动电路的工作原理。\n\n[0084]请继续参阅图2A与图3A，以所述驱动晶体管T1、所述补偿晶体管T3、所述数据写入晶体管T4、所述第一开关晶体管T5、所述第二开关晶体管T6及所述复位晶体管T7为P型硅晶体管、所述初始化晶体管T2为N型氧化物晶体管；所述补偿晶体管T3与所述数据写入晶体管T4共用所述第二扫描信号Scan2为例；在第N帧周期(N Frame)内，包括所述初始化阶段t1、所述补偿阶段t2及所述发光阶段t3；\n\n[0085]在所述初始化阶段t1：所述初始化晶体管T2响应所述第一扫描信号Scan1，所述初始化晶体管T2导通，所述电位可变信号VI1传输至所述驱动晶体管T1的栅极；所述存储电容C1下极板接入所述电位可变信号VI1，所述存储电容C1的上极板与下极板之间电压差变大，所述存储电容C1充电，所述驱动晶体管T1的栅极电压Vg被所述电位可变信号VI1复位至低电平信号Vini，所述驱动晶体管T1导通，实现所述驱动晶体管T1的初始化。\n\n[0086]在所述补偿阶段t2：所述补偿晶体管T3、所述数据写入晶体管T4及所述复位晶体管T7响应所述第二扫描信号Scan2导通，所述数据信号Vdata传输至所述驱动晶体管T1的第一极(A点)；所述补偿晶体管T3导通使得所述驱动晶体管T1的栅极与第二极连接，具有补偿阈值电压Vth作用的所述数据信号Vdata被传输至所述驱动晶体管T1的栅极，所述存储电容C1的存在使得所述驱动晶体管T1的栅极电压Vg由Vini逐渐抬升直至使所述驱动晶体管T1充分导通，所述存储电容C1维持所述驱动晶体管T1的栅极电压Vg，从而实现对所述驱动晶体管T1的阈值电压Vth的补偿；所述复位晶体管T7的导通使得所述复位信号VI2被传输至所述发光器件D1的阳极，实现对所述发光器件D1的初始化。\n\n[0087]在所述发光阶段t3：所述第一开关晶体管T5和所述第二开关晶体管T6响应所述发光控制信号EM导通，所述驱动晶体管T1形成驱动电流驱动所述发光器件D1发光；利用处于截止状态的所述补偿晶体管T3降低所述驱动晶体管T1的第二极(B点)对所述驱动晶体管T1栅极(Q点)电压Vg的影响，利用处于截止状态的所述初始化晶体管T2的漏电流特性及所述电位可变信号VI1动态补偿因所述补偿晶体管T3的漏电流造成的对所述驱动晶体管T1的栅极电压Vg的影响，以使所述驱动晶体管T1的栅极电压Vg保持稳定；即Vg保持在Vdata+Vth，保证所述发光器件D1的稳定发光。\n\n[0088]与之相似地，请继续参阅图2B与图3B，以所述驱动晶体管T1、所述初始化晶体管T2、所述数据写入晶体管T4、所述第一开关晶体管T5、所述第二开关晶体管T6及所述复位晶体管T7为P型硅晶体管、所述补偿晶体管T3为N型氧化物晶体管；在第N帧周期(N Frame)内，包括所述初始化阶段t1、所述补偿阶段t2及所述发光阶段t3；\n\n[0089]在所述初始化阶段t1：所述初始化晶体管T2响应所述第一扫描信号Scan1，所述初始化晶体管T2导通，所述电位可变信号VI1传输至所述驱动晶体管T1的栅极；所述存储电容C1充电，所述驱动晶体管T1的栅极电压Vg被所述电位可变信号VI1复位至低电平信号Vini，所述驱动晶体管T1导通，实现所述驱动晶体管T1的初始化。\n\n[0090]在所述补偿阶段t2：所述补偿晶体管T3响应所述补偿控制信号Scan3导通，所述数据写入晶体管T4及所述复位晶体管T7响应所述第二扫描信号Scan2导通，所述数据信号Vdata传输至所述驱动晶体管T1的第一极(A点)；所述补偿晶体管T3导通使得所述驱动晶体管T1的栅极与第二极连接，具有补偿阈值电压Vth作用的所述数据信号Vdata被传输至所述驱动晶体管T1的栅极，所述存储电容C1的存在使得所述驱动晶体管T1的栅极电压Vg由Vini逐渐抬升直至使所述驱动晶体管T1充分导通，所述存储电容C1维持所述驱动晶体管T1的栅极电压Vg，从而实现对所述驱动晶体管T1的阈值电压Vth的补偿；所述复位晶体管T7的导通使得所述复位信号VI2被传输至所述发光器件D1的阳极，实现对所述发光器件D1的初始化。\n\n[0091]在所述发光阶段t3：所述第一开关晶体管T5和所述第二开关晶体管T6响应所述发光控制信号EM导通，所述驱动晶体管T1形成驱动电流驱动所述发光器件D1发光；利用处于截止状态的所述补偿晶体管T3降低所述驱动晶体管T1的第二极(B点)对所述驱动晶体管T1栅极(Q点)电压Vg的影响，利用处于截止状态的所述初始化晶体管T2的漏电流特性及所述电位可变信号VI1动态补偿因所述补偿晶体管T3的漏电流造成的对所述驱动晶体管T1的栅极电压Vg的影响，以使所述驱动晶体管T1的栅极电压Vg保持稳定；即Vg保持在Vdata+Vth，保证所述发光器件D1的稳定发光。\n\n[0092]请继续参阅图2A～图2B和图3A～图3B，在所述发光阶段t3，由于所述第一开关晶体管T5导通，所述第一电压端Vdd将信号Vdd1传输至所述驱动晶体管T1的第一极，所述驱动晶体管T1的栅极电压Vg与第一极(A点)电压之差Vgs等于Vg-Vdd1；因此，由Vg＝Vdata+Vth、Vgs＝Vg-Vdd1和驱动电流I＝(CoxμmW/L)*(Vgs-Vth)2/2(其中，Cox、μm、W、L分别为晶体管的单位面积沟道电容、沟道迁移率、沟道宽和沟道长)可得；所述驱动电流I＝(CoxμmW/L)*(Vg-Vdd1-Vg+Vdata)2/2＝(CoxμmW/L)*(Vdata-Vdd1)2/2；以此所述驱动电流I不受所述阈值电压Vth的变化的影响，保证所述发光器件D1发光的稳定性。\n\n[0093]所述电位可变信号VI1在所述初始化晶体管T2响应所述第一扫描信号Scan1、所述补偿晶体管T3响应所述补偿控制信号Scan3时为恒定低电平信号，在所述发光阶段t3为连续上升信号。\n\n[0094]在图2A～图2B所述的像素驱动电路中，均以所述驱动晶体管T1、所述数据写入晶体管T4、所述第一开关晶体管T5、所述第二开关晶体管T6及所述复位晶体管T7为P型晶体管为例进行说明，本领域的相关技术人员也可将其替换为N型晶体管，并将相应的部分信号进行反相实现上述功能，在此对其不再进行赘述。\n\n[0095]请参阅图4A～图4C，其为本申请的实施例提供的显示面板的结构示意图；如图5A～图5B，其为本申请的实施例提供的像素驱动电路的结构示意图。\n\n[0096]本申请还提供一种显示面板，包括：多个像素600及控制所述像素600发光的像素驱动电路；所述像素驱动电路包括：形成所述像素600的发光器件D1，被配置为向所述发光器件D1提供驱动电流的驱动晶体管T1，用于提供电位可变信号VI1的电位可变信号线VI11，初始化晶体管T2，以及，补偿晶体管T3；所述初始化晶体管T2和补偿晶体管T3具有不同材料的半导体层；\n\n[0097]所述补偿晶体管T3的栅极与补偿控制信号线S3连接，所述补偿晶体管T3的源极或漏极中的一者与所述驱动晶体管T1的栅极连接，源极或漏极中的另一者与所述驱动晶体管T1的源极或漏极中的一者连接；\n\n[0098]所述初始化晶体管T2的栅极与第一扫描信号线S1连接，所述初始化晶体管T2的源极或漏极中的一者与所述电位可变信号线VI11连接，源极或漏极中的另一者与所述驱动晶体管T1的栅极连接。\n\n[0099]其中，所述初始化晶体管T2和所述补偿晶体管T3的所述半导体层601和602的载流子迁移率不同；所述初始化晶体管T2的所述半导体层601的载流子迁移率大于所述补偿晶体管T3的所述半导体层602的载流子迁移率；或，所述初始化晶体管T2的所述半导体层601的载流子迁移率小于所述补偿晶体管T3的所述半导体层602的载流子迁移率。\n\n[0100]进一步地，所述初始化晶体管T2和所述补偿晶体管T3的所述半导体层601和602包括P型晶体管半导体或N型晶体管半导体。\n\n[0101]进一步地，所述初始化晶体管T2的所述半导体层601包括硅半导体层或氧化物半导体层的其中之一，所述补偿晶体管T3的所述半导体层602包括硅半导体层或氧化物半导体层的其中另一。\n\n[0102]请继续参阅图5A～图5B，在一些实施例中，所述像素驱动电路还包括：\n\n[0103]数据写入晶体管T4，所述数据写入晶体管T4的栅极与第二扫描信号线S2连接，所述数据写入晶体管T4的源极或漏极中的一者与数据信号线Data连接，源极或漏极中的另一者与所述驱动晶体管T1的源极或漏极中的一者连接；\n\n[0104]存储电容C1，所述存储电容C1的上极板与第一电压端Vdd连接，下极板与所述初始化晶体管T2的源极或漏极中连接所述驱动晶体管T1栅极的一者、所述补偿晶体管T3的源极或漏极中连接所述驱动晶体管T1栅极的一者及所述驱动晶体管T1的栅极连接。\n\n[0105]所述像素驱动电路还包括：第一开关晶体管T5，所述第一开关晶体管T5的栅极与发光控制信号线EM1连接，所述第一开关晶体管T5的源极或漏极中的一者与第一电压端Vdd连接，源极或漏极中的另一者与所述驱动晶体管T1的源极或漏极中的一者连接；\n\n[0106]第二开关晶体管T6，所述第二开关晶体管T6的栅极与所述发光控制信号线EM1连接，所述第二开关晶体管T6的源极或漏极中的一者所述驱动晶体管T1的源极或漏极中的一者连接，源极或漏极中的另一者与所述发光器件D1的阳极连接。\n\n[0107]所述像素驱动电路还包括：复位晶体管T7，所述复位晶体管T7的栅极与第二扫描信号线S2连接，所述复位晶体管T7的源极或漏极中的一者与复位信号线VI12连接，源极或漏极中的另一者与所述发光器件D1的阳极连接。\n\n[0108]进一步地，所述复位晶体管T7与所述初始化晶体管T2可以具有不同材料的半导体层，也可具有相同材料的半导体层，如图5A和图5B所示。在如图5A所示的像素驱动电路中，所述复位晶体管T7与所述初始化晶体管T2具有不同材料的半导体层；进一步地，所述复位晶体管T7与所述补偿晶体管T3具有相同材料的半导体层。而在如图5B所示的像素驱动电路中，所述复位晶体管T7与所述初始化晶体管T2具有相同材料的半导体层；进一步地，所述复位晶体管T7与所述补偿晶体管T3具有不同材料的半导体层。\n\n[0109]其中，在如图5A所示的所示像素驱动电路中，所述补偿晶体管T3可与所述补偿控制信号线S3连接，也可与所述第二扫描信号线S2连接，以降低制程难度。\n\n[0110]在如图5A～图5B所示的像素驱动电路中均以所述驱动晶体管T1、所述数据写入晶体管T4、所述第一开关晶体管T5、所述第二开关晶体管T6及所述复位晶体管T7为P型晶体管为例，本领域的相关技术人员也可用N型晶体管实现，在此对其不再进行赘述。\n\n[0111]在所述显示面板的所述像素驱动电路中，均以所述发光器件D1采用共阴极接法(即所述发光器件D1的阴极接第二电压端Vss)为例，本领域相关技术人员亦可采用共阳极接法(即所述发光器件D1的阳极接所述第一电压端Vdd)，在此对其不再进行赘述。\n\n[0112]请继续参阅图4A～图4C，所述显示面板还包括衬底700，所述像素驱动电路位于所述衬底700上，所述发光器件D1位于所述像素驱动电路远离所述衬底700的一侧。\n\n[0113]所述衬底700包括柔性衬底与刚性衬底；所述衬底700的制备材料包括玻璃、石英、陶瓷、塑料或聚合物树脂等；聚合物树脂包括聚醚砜、聚丙烯酸酯、聚芳酯、聚醚酰亚胺、聚萘二甲酸乙二醇酯、聚对苯二甲酸乙二醇酯、聚苯硫醚、聚烯丙基酯、聚酰亚胺、聚碳酸酯、三乙酸纤维素、醋酸丙酸纤维素中的至少一种。\n\n[0114]所述显示面板还包括：\n\n[0115]第一半导体层701，形成于所述衬底700上，所述第一半导体层701包括源极区701a，沟道区701b，漏极区701c；所述第一半导体层701的衬底材料可以为N型或者P型硅半导体。\n\n[0116]第一绝缘层702，覆盖所述衬底700及所述第一半导体层701，所述第一绝缘层702的制备材料包括氮化硅、氧化硅、氧氮化硅、氧化铝、氧化钽、氧化铪、氧化锆或氧化钛中的至少一种。\n\n[0117]第一栅极703，形成于所述第一绝缘层702远离所述第一半导体层701的一侧，且与所述第一半导体层701对位设置，所述第一栅极703与所述源极区701a、所述沟道区701b、所述漏极区701c构成硅晶体管的源极、栅极与漏极，所述第一栅极703的制备材料包括钼、铝、银、镁、金、镍、钛、钽、钨(W)等中的至少一种。进一步的，所述第一栅极703的制备材料为钼。\n\n[0118]第二绝缘层704，形成于所述第一栅极703远离所述衬底700的一侧，所述第二绝缘层704的制备材料包括氮化硅、氧化硅、氧氮化硅、氧化铝、氧化钽、氧化铪、氧化锆或氧化钛中的至少一种。\n\n[0119]第二栅极层，形成于所述第二绝缘层704远离所述第一栅极703的一侧，所述第二栅极层包括与所述第一栅极703对位设置的第二栅极7051以及远离所述第二栅极7051设置的第三栅极7052；所述第二栅极7051与所述第一栅极703构成所述像素驱动电路中的所述存储电容C1的上极板与下极板。所述第二栅极层的制备材料包括钼、铝、银、镁、金、镍、钛、钽、钨(W)等中的至少一种。进一步的，所述第二栅极层的制备材料为钼。\n\n[0120]第三绝缘层706，形成于所述第二栅极层远离所述衬底700的一侧，所述第三绝缘层706的制备材料包括氮化硅、氧化硅、氧氮化硅、氧化铝、氧化钽、氧化铪、氧化锆或氧化钛中的至少一种。\n\n[0121]第二半导体层707，位于所述第三绝缘层706远离所述衬底700的一侧，所述第二半导体层707包括源极区707a，沟道区707b，漏极区707c；所述第二半导体层707的材料为氧化物半导体，所述氧化物半导体可包括锌、铟、镓、锡或钛的金属的氧化物中的至少一种；进一步地，所述氧化物半导体可包括氧化锌、氧化锌锡、氧化锌铟、氧化铟、氧化钛、氧化铟镓锌、氧化铟锌锡等中的至少一种。\n\n[0122]第四绝缘层708，形成于所述第二半导体层707远离所述衬底700的一侧，所述第四绝缘层708的制备材料包括氮化硅、氧化硅、氧氮化硅、氧化铝、氧化钽、氧化铪、氧化锆或氧化钛中的至少一种。\n\n[0123]第四栅极709，形成于所述第四绝缘层708远离所述第二半导体层707的一侧，且与所述第三栅极7052对位设置；所述第四栅极709与所述第二半导体层707的所述源极区707a、所述沟道区707b、所述漏极区707c形成氧化物晶体管的源极、栅极、漏极，其中第三栅极7052构成氧化物晶体管中的底栅部分。所述第四栅极709的制备材料包括钼、铝、银、镁、金、镍、钛、钽、钨(W)等中的至少一种。进一步的，所述第四栅极709的制备材料为钼。\n\n[0124]第五绝缘层710，形成于所述第四栅极709远离所述衬底700的一侧，所述第五绝缘层710的制备材料包括氮化硅、氧化硅、氧氮化硅、氧化铝、氧化钽、氧化铪、氧化锆或氧化钛中的至少一种。\n\n[0125]第一金属层711，形成于所述第五绝缘层710远离所述衬底700的一侧，所述第一金属层711通过过孔与所述硅晶体管、所述氧化物晶体管的栅极、源极、漏极连接；所述第一金属层711的制备材料包括金、银、铜、锂、钠、钾、镁、铝、锌中的至少一种。\n\n[0126]第六绝缘层712，形成于所述第一金属层711远离所述衬底700的一侧，所述第六绝缘层712可以为采用有机材料或者无机材料及其混合物。\n\n[0127]阳极713，形成于所述第六绝缘层712远离所述衬底700的一侧，所述阳极713的制备材料包括氧化铟锡、氧化铟锡锌中的一种，或氧化铟锡、氧化铟锡锌与银的组合，所述阳极713通过过孔与所述第一金属层711电性连接。\n\n[0128]像素定义层716，形成于所述阳极713远离所述衬底700的一侧，所述像素定义层716的开孔形状与所述像素600的图案一致。\n\n[0129]发光层715，通过所述像素定义层716上的所述开孔与所述阳极713接触，所述发光层715包括有机发光材料；进一步地，所述发光层715还包括荧光材料、量子点材料、钙钛矿材料中的至少一种。\n\n[0130]阴极714，位于所述发光层715及所述像素定义层716远离所述阳极713的一侧；所述阳极713，所述阴极714及位于所述阳极713和所述阴极714之间的所述发光层715形成所述发光器件D1。\n\n[0131]封装层719，位于所述发光器件D1远离所述衬底700的一侧，所述封装层719的制备材料包括有机材料与无机材料的组合。\n\n[0132]在垂直于所述衬底700的方向上，所述第一半导体层701、所述第一绝缘层702、所述第一栅极703、所述第二绝缘层704、所述第二栅极层、所述第三绝缘层706、所述第二半导体层707、所述第四绝缘层708、所述第四栅极709、所述第五绝缘层710及第一金属层711形成所述像素驱动电路。\n\n[0133]为避免所述封装层719中的氢元素与氧元素对所述氧化物晶体管造成影响，所述显示面板还包括位于所述像素驱动电路与所述发光器件D1之间的导电层720，在俯视视角下，所述导电层720与所述氧化物晶体管的正投影重合，且所述导电层720覆盖所述氧化物晶体管，如图4B所示。进一步地，若所述初始化晶体管T2为氧化物晶体管，所述导电层720与所述初始化晶体管T2的正投影重合，且所述导电层720覆盖所述初始化晶体管T2；与之相似地，若所述补偿晶体管T3为氧化物晶体管，所述导电层720与所述补偿晶体管T3的正投影重合，且所述导电层720覆盖所述补偿晶体管T3。\n\n[0134]具体地，所述显示面板还包括第七绝缘层717，所述第七绝缘层717位于所述导电层720靠近所述衬底700的一侧，所述导电层720位于所述第六绝缘层712与所述第七绝缘层717之间，所述导电层720通过所述第七绝缘层717的开孔与第一金属层711连接，所述导电层720的制备材料包括金、银、铜、锂、钠、钾、镁、铝、锌中的至少一种；所述第七绝缘层717的制备材料包括有机材料或者无机材料及其混合物。\n\n[0135]请继续参与图4A～图4B，所述显示面板还包括缓冲层718，所述缓冲层718的制备材料包括有机材料与无机材料及其组合；具体地，缓冲层718的制备材料包括氮化硅、氧化硅、氮氧化硅等。\n\n[0136]请继续参阅图4C，所述在俯视视角下，多个所述像素600分别与所述电位可变信号线VI11和所述复位信号线VI12连接。\n\n[0137]所述电位可变信号线VI11可位于所述显示面板的左右边框区域并从所述左右边框区域向所述显示面板的显示区延伸，所述复位信号线VI12可位于所述显示面板的下边框区域并从所述下边框区域向所述显示面板的显示区延伸。\n\n[0138]由于所述复位信号线VI12可与驱动芯片连接，利用所述驱动芯片提供所需的所述电位可变信号VI1，所以为降低对所述显示面板的左右边框的影响，所述电位可变信号线VI11可位于所述显示面板的下边框区域并从所述下边框区域向所述显示面板的显示区延伸，所述复位信号线VI12可位于所述显示面板的左右边框区域并从所述左右边框区域向所述显示面板的显示区延伸。\n\n[0139]进一步地，所述显示面板还可包括彩色滤光片、触控电极等未示出部分。\n\n[0140]本申请实施例提供的像素驱动电路及其驱动方法、显示面板，所述像素驱动电路包括：发光器件D1、驱动晶体管T1以及补偿模块100；所述补偿模块100至少包括：初始化晶体管T2及补偿晶体管T3；所述初始化晶体管T2用于响应第一扫描信号Scan1并将电位可变信号VI1传输至所述驱动晶体管T1的栅极，初始化所述驱动晶体管T1的栅极电压Vg；所述补偿晶体管T3用于响应补偿控制信号Scan3并将具有补偿阈值电压的数据信号Vdata传输至所述驱动晶体管T1的栅极；其中，所述初始化晶体管T2与所述补偿晶体管T3的类型不同；所述电位可变信号VI1在发光阶段动态补偿所述驱动晶体管T1的栅极电压Vg，以在所述发光阶段t3维持所述驱动晶体管T1的栅极电压Vg稳定，降低所述驱动晶体管T1的源极或漏极对所述驱动晶体管T1栅极的影响，可以改善显示面板的显示效果。\n\n[0141]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0142]以上对本申请实施例所提供的像素驱动电路及其驱动方法、显示面板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种像素驱动电路及其驱动方法、显示面板。\n\n背景技术\n\n[0002]采用低温多晶硅技术制成的背板虽然可以使显示面板达到较高的像素密度，但由于硅类晶体管的漏电流较大，在显示面板使用低刷新频率时，显示面板的显示效果较差，影响显示品质。\n\n发明内容\n\n[0003]本申请实施例提供一种像素驱动电路及其驱动方法、显示面板，可以维持驱动晶体管的栅极电压稳定，降低所述驱动晶体管的源极或漏极对所述驱动晶体管栅极的影响，改善显示面板的显示效果。\n\n[0004]本申请实施例提供一种像素驱动电路，包括：发光器件、驱动晶体管以及补偿模块；所述补偿模块至少包括：初始化晶体管及补偿晶体管；\n\n[0005]所述初始化晶体管用于响应第一扫描信号并将电位可变信号传输至所述驱动晶体管的栅极，初始化所述驱动晶体管的栅极电压；\n\n[0006]所述补偿晶体管用于响应补偿控制信号并将具有补偿阈值电压的数据信号传输至所述驱动晶体管的栅极；\n\n[0007]其中，所述初始化晶体管与所述补偿晶体管的类型不同；所述电位可变信号在发光阶段动态补偿所述驱动晶体管的栅极电压。\n\n[0008]在一些实施例中，所述初始化晶体管为硅晶体管或氧化物晶体管的其中之一，所述补偿晶体管为硅晶体管或氧化物晶体管的其中另一。\n\n[0009]在一些实施例中，所述初始化晶体管为硅晶体管，所述补偿晶体管为氧化物晶体管。\n\n[0010]在一些实施例中，所述初始化晶体管为P型晶体管；所述补偿晶体管为N型晶体管。\n\n[0011]在一些实施例中，所述电位可变信号在所述初始化晶体管响应所述第一扫描信号、所述补偿晶体管响应所述补偿控制信号时为恒定低电平信号，在所述发光阶段为连续上升信号。\n\n[0012]在一些实施例中，所述像素驱动电路还包括数据写入模块，所述数据写入模块用于响应第二扫描信号并将所述数据信号传输至所述驱动晶体管的源极或漏极。\n\n[0013]在一些实施例中，所述像素驱动电路还包括存储模块，所述存储模块用于维持所述驱动晶体管的栅极电压。\n\n[0014]在一些实施例中，所述像素驱动电路还包括发光控制模块，所述发光控制模块用于响应发光控制信号控制所述发光器件发光。\n\n[0015]在一些实施例中，所述像素驱动电路还包括复位模块，所述复位模块用于响应第二扫描信号并将复位信号传输至所述发光器件的阳极。\n\n[0016]在一些实施例中，所述复位信号为恒定信号。\n\n[0017]在一些实施例中，所述发光器件包括有机发光二极管、次毫米发光二极管及微型发光二极管的其中一种。\n\n[0018]本申请还提供一种像素驱动电路的驱动方法，用于驱动所述的像素驱动电路，在第N帧周期内，所述驱动方法包括：\n\n[0019]初始化阶段，所述补偿模块的所述初始化晶体管响应所述第一扫描信号，所述电位可变信号传输至所述驱动晶体管的栅极，初始化所述驱动晶体管的栅极电压；\n\n[0020]补偿阶段，所述补偿模块的所述补偿晶体管响应所述补偿控制信号，将具有补偿阈值电压的数据信号传输至所述驱动晶体管的栅极，补偿所述驱动晶体管的阈值电压；\n\n[0021]所述发光阶段，所述驱动晶体管驱动所述发光器件发光，所述电位可变信号动态补偿所述驱动晶体管的栅极电压。\n\n[0022]在一些实施例中，所述电位可变信号在所述初始化阶段和所述补偿阶段为恒定信号，所述电位可变信号在所述发光阶段随补偿前的所述驱动晶体管的栅极电压连续上升或连续下降。\n\n[0023]本申请还提供一种显示面板，包括：多个像素及控制所述像素发光的像素驱动电路；所述像素驱动电路包括：形成所述像素的发光器件，被配置为向所述发光器件提供驱动电流的驱动晶体管，用于提供电位可变信号的电位可变信号线，初始化晶体管，以及，补偿晶体管；所述初始化晶体管和补偿晶体管具有不同材料的半导体层；\n\n[0024]所述补偿晶体管的栅极与补偿控制信号线连接，所述补偿晶体管的源极或漏极中的一者与所述驱动晶体管的栅极连接，源极或漏极中的另一者与所述驱动晶体管的源极或漏极中的一者连接；\n\n[0025]所述初始化晶体管的栅极与第一扫描信号线连接，所述初始化晶体管的源极或漏极中的一者与电位可变信号线连接，源极或漏极中的另一者与所述驱动晶体管的栅极连接。\n\n[0026]在一些实施例中，所述初始化晶体管和所述补偿晶体管的所述半导体层的载流子迁移率不同；所述初始化晶体管的所述半导体层的载流子迁移率大于所述补偿晶体管的所述半导体层的载流子迁移率；或，所述初始化晶体管的所述半导体层的载流子迁移率小于所述补偿晶体管的所述半导体层的载流子迁移率。\n\n[0027]在一些实施例中，所述像素驱动电路还包括：\n\n[0028]数据写入晶体管，所述数据写入晶体管的栅极与第二扫描信号线连接，所述数据写入晶体管的源极或漏极中的一者与数据信号线连接，源极或漏极中的另一者与所述驱动晶体管的源极或漏极中的一者连接；\n\n[0029]存储电容，所述存储电容的上极板与第一电压端连接，下极板与所述初始化晶体管的源极或漏极中连接所述驱动晶体管栅极的一者、所述补偿晶体管的源极或漏极中连接所述驱动晶体管栅极的一者及所述驱动晶体管的栅极连接。\n\n[0030]在一些实施例中，所述像素驱动电路还包括：\n\n[0031]第一开关晶体管，所述第一开关晶体管的栅极与发光控制信号线连接，所述第一开关晶体管的源极或漏极中的一者与第一电压端连接，源极或漏极中的另一者与所述驱动晶体管的源极或漏极中的一者连接；\n\n[0032]第二开关晶体管，所述第二开关晶体管的栅极与所述发光控制信号线连接，所述第二开关晶体管的源极或漏极中的一者所述驱动晶体管的源极或漏极中的一者连接，源极或漏极中的另一者与所述发光器件的阳极连接。\n\n[0033]在一些实施例中，所述像素驱动电路还包括：\n\n[0034]复位晶体管，所述复位晶体管的栅极与第二扫描信号线连接，所述复位晶体管的源极或漏极中的一者与复位信号线连接，源极或漏极中的另一者与所述发光器件的阳极连接，所述复位晶体管与所述初始化晶体管具有相同材料的半导体层。\n\n[0035]在一些实施例中，所述显示面板还包括位于所述像素驱动电路与所述发光器件之间的导电层，在俯视视角下，所述导电层与所述补偿晶体管的正投影重合，且所述导电层覆盖所述补偿晶体管。\n\n[0036]在一些实施例中，所述导电层的制备材料包括金、银、铜、锂、钠、钾、镁、铝、锌中的至少一种。\n\n[0037]本申请实施例提供的像素驱动电路及其驱动方法、显示面板，所述像素驱动电路包括：发光器件、驱动晶体管以及补偿模块；所述补偿模块至少包括：初始化晶体管及补偿晶体管；所述初始化晶体管用于响应第一扫描信号并将电位可变信号传输至所述驱动晶体管的栅极，初始化所述驱动晶体管的栅极电压；所述补偿晶体管用于响应补偿控制信号并将具有补偿阈值电压的数据信号传输至所述驱动晶体管的栅极；其中，所述初始化晶体管与所述补偿晶体管的类型不同；所述电位可变信号在发光阶段动态补偿所述驱动晶体管的栅极电压，以在所述发光阶段维持所述驱动晶体管的栅极电压稳定，降低所述驱动晶体管的源极或漏极对所述驱动晶体管栅极的影响，可以改善显示面板的显示效果。\n\n附图说明\n\n[0038]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0039]图1为本申请的实施例提供的像素驱动电路的原理图；\n\n[0040]图2A～图2B为本申请的实施例提供的像素驱动电路的结构示意图；\n\n[0041]图3A为图2A提供的像素驱动电路的工作时序图；\n\n[0042]图3B为图2B提供的像素驱动电路的工作时序图；\n\n[0043]图3C为本申请的实施例提供的电位可变信号及驱动晶体管栅极电压的工作时序图；\n\n[0044]图4A～图4C为本申请的实施例提供的显示面板的结构示意图；\n\n[0045]图5A～图5B为本申请的实施例提供的像素驱动电路的结构示意图。\n\n具体实施方式\n\n[0046]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0047]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0048]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0049]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0050]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0051]具体的，请参阅图1，其为本申请的实施例提供的像素驱动电路的原理图，如图2A～图2B，其为本申请的实施例提供的像素驱动电路的结构示意图；如图3A，其为图2A提供的像素驱动电路的工作时序图；如图3B，其为图2B提供的像素驱动电路的工作时序图；如图3C，其为本申请的实施例提供的电位可变信号及驱动晶体管栅极电压的工作时序图。\n\n[0052]本申请实施例提供一种像素驱动电路，包括：发光器件D1、驱动晶体管T1以及补偿模块100；所述补偿模块100至少包括：初始化晶体管T2及补偿晶体管T3；\n\n[0053]所述初始化晶体管T2用于响应第一扫描信号Scan1并将电位可变信号VI1传输至所述驱动晶体管T1的栅极，初始化所述驱动晶体管T1的栅极电压Vg；\n\n[0054]所述补偿晶体管T3用于响应补偿控制信号Scan3并将具有补偿阈值电压的数据信号Vdata传输至所述驱动晶体管T1的栅极；\n\n[0055]其中，所述初始化晶体管T2与所述补偿晶体管T3的类型不同；所述电位可变信号VI1在发光阶段t3动态补偿所述驱动晶体管T1的栅极电压Vg，以在所述发光阶段t3维持所述驱动晶体管T1的栅极电压Vg稳定，降低所述驱动晶体管T1的源极或漏极对所述驱动晶体管T1栅极的影响。\n\n[0056]进一步地，所述初始化晶体管T2为硅晶体管或氧化物晶体管的其中之一，所述补偿晶体管T3为硅晶体管或氧化物晶体管的其中另一。\n\n[0057]具体地，请继续参阅图2A～图2B及图3A～图3B，在所述发光阶段t3，利用所述补偿晶体管T3可减小所述驱动晶体管T1的源极或漏极(B点)中的一者对所述驱动晶体管T1栅极(Q点)电压Vg的影响。但所述补偿晶体管T3会存在一定的漏电流，为降低所述补偿晶体管T3的漏电流对所述驱动晶体管T1的影响，利用所述初始化晶体管T2的漏电流特性及所述电位可变信号VI1动态补偿因所述补偿晶体管T3的漏电流造成的对所述驱动晶体管T1的栅极电压Vg的影响，以使所述驱动晶体管T1的栅极电压Vg保持恒定，保证所述发光器件D1的稳定发光。更进一步地，可保证所述发光器件D1在任何刷新频率下均可实现稳定发光。\n\n[0058]更进一步地，所述初始化晶体管T2为氧化物晶体管，所述补偿晶体管T3为硅晶体管；但由于硅晶体管的漏电流要大于氧化物晶体管的漏电流，因此在所述初始化晶体管T2为氧化物晶体管，所述补偿晶体管T3为硅晶体管时，所述补偿晶体管T3的漏电流要大于所述初始化晶体管T2的漏电流，影响所述电位可变信号VI1对所述驱动晶体管T1的栅极电压Vg的补偿效果。\n\n[0059]因此，为提高对所述驱动晶体管T1的栅极电压Vg的补偿效果，所述初始化晶体管T2为硅晶体管，所述补偿晶体管T3为氧化物晶体管，利用所述补偿晶体管T3的漏电流小于所述初始化晶体管T2的漏电流的特性，降低所述驱动晶体管T1的源极或漏极(B点)中的一者对所述驱动晶体管T1栅极(Q点)电压Vg的影响，利用所述初始化晶体管T2具有较大的漏电流的特性，通过所述电位可变信号VI1降低所述补偿晶体管T3的漏电流对所述驱动晶体管T1的影响，以使所述驱动晶体管T1的栅极电压Vg保持恒定，保证所述发光器件D1的稳定发光。\n\n[0060]所述初始化晶体管T2及所述补偿晶体管T3可以为P型晶体管，也可为N型晶体管；进一步地，由于P型氧化物晶体管受目前P型氧化物材料的制约，制备出高质量的P型氧化物晶体管也受到制约，因此，在考虑现有技术的基础上，当所述初始化晶体管T2或所述补偿晶体管T3为氧化物晶体管时，选用N型氧化物晶体管。但在此并不用于限制本申请中的所述氧化物晶体管为N型晶体管，在本申请中所述氧化物晶体管也可为P型晶体管。\n\n[0061]其中，所述硅晶体管包括单晶硅晶体管、多晶硅晶体管、微晶硅晶体管、非晶硅或其他含硅的晶体管；所述氧化物晶体管包括含锌、铟、镓、锡或钛等金属及其氧化物的氧化物晶体管。进一步地，所述多晶硅晶体管包括低温多晶硅晶体管；所述氧化物晶体管包括含氧化锌、氧化锌锡、氧化锌铟、氧化铟、氧化钛、氧化铟镓锌、氧化铟锌锡等的氧化物晶体管。\n\n[0062]请继续参阅图1和图2A～图2B，所述像素驱动电路还包括数据写入模块200，所述数据写入模块200用于响应第二扫描信号Scan2并将所述数据信号Vdata传输至所述驱动晶体管T1的源极或漏极。\n\n[0063]其中，所述补偿晶体管T3采用与所述数据写入晶体管T4相同类型的晶体管时，所述补偿晶体管T3可直接利用所述第二扫描信号Scan2代替所述补偿控制信号Scan3。\n\n[0064]具体地，请参阅图2A～图2B，所述数据写入模块200包括数据写入晶体管T4，所述数据写入晶体管T4的栅极与所述第二扫描信号Scan2连接，所述数据信号Vdata传输至所述数据写入晶体管T4的第一极，所述数据写入晶体管T4的第二极与所述驱动晶体管T1的第一极连接。\n\n[0065]所述像素驱动电路还包括存储模块300，所述存储模块300用于维持所述驱动晶体管T1的栅极电压Vg。\n\n[0066]具体地，请参阅图2A～图2B，所述存储模块300包括存储电容C1，所述存储电容C1的一端与第一电压端Vdd连接，所述存储电容C1的另一端与所述驱动晶体管T1的栅极、所述初始化晶体管T2的第二极、所述补偿晶体管T3的第一极连接。具体地，所述存储电容C1的上极板与所述第一电压端Vdd连接，所述存储电容C2的下极板与所述驱动晶体管T1的栅极、所述初始化晶体管T2的第二极、所述补偿晶体管T3的第一极连接。\n\n[0067]所述像素驱动电路还包括发光控制模块400，所述发光控制模块400用于响应发光控制信号EM控制所述发光器件D1发光。\n\n[0068]具体地，请参阅图2A～图2B，所述发光控制模块400包括第一开关晶体管T5和第二开关晶体管T6；所述发光控制信号EM传输至所述第一开关晶体管T5的栅极与所述第二开关晶体管T6的栅极，所述第一开关晶体管T5的第一极与所述第一电压端Vdd连接，所述第一开关晶体管T5的第二极与所述驱动晶体管T1的第一极连接；所述第二开关晶体管T6的第一极与所述驱动晶体管T1的第二极连接，所述第二开关晶体管T6的第二极与所述发光器件D1的阳极连接。\n\n[0069]所述像素驱动电路还包括复位模块500，所述复位模块500用于响应第二扫描信号Scan2并将复位信号VI2传输至所述发光器件D1的阳极。\n\n[0070]具体地，请参阅图2A～图2B，所述复位模块500包括复位晶体管T7；所述第二扫描信号Scan2传输至所述复位晶体管T7的栅极，所述复位信号VI2传输至所述复位晶体管T7的第一极，所述复位晶体管T7的第二极与所述发光器件D1的阳极连接。\n\n[0071]其中，所述复位信号VI2为恒定信号；在所述发光阶段t3，可通过驱动芯片提供所需的所述电位可变信号VI1。\n\n[0072]所述复位晶体管T7与所述初始化晶体管T2的类型可以不同，也可相同。具体地，在图2A所示的像素驱动电路中，所述复位晶体管T7与所述初始化晶体管T2的类型不同；进一步地，所述复位晶体管T7与所述补偿晶体管T3的类型相同。而在图2B所示的像素驱动电路中，所述复位晶体管T7与所述初始化晶体管T2的类型相同；进一步地，所述复位晶体管T7与所述补偿晶体管T3的类型不同。\n\n[0073]所述发光器件D1包括有机发光二极管、次毫米发光二极管及微型发光二极管的其中一种。\n\n[0074]在图2A～图2B所示的像素驱动电路中，均以所述发光器件D1的阴极接第二电压端Vss为例；此外，所述发光器件D1亦可采用阳极接所述第一电压端Vdd的形式布置于所述像素驱动电路中，在此对其不再进行赘述。\n\n[0075]为区分晶体管中除栅极以外的源极与漏极，本申请的第一极可以为漏极或源极的一者，相应地，第二极为源极或漏极中的另一者。\n\n[0076]本申请还提供一种像素驱动电路的驱动方法，用于驱动所述像素驱动电路，在第N帧周期(N Frame)内，所述驱动方法包括：\n\n[0077]初始化阶段t1，所述补偿模块100的所述初始化晶体管T2响应第一扫描信号Scan1，所述电位可变信号VI1传输至所述驱动晶体管T1的栅极，初始化所述驱动晶体管T1的栅极电压Vg；\n\n[0078]补偿阶段t2，所述补偿模块100的所述补偿晶体管T3响应补偿控制信号Scan3，将具有补偿阈值电压的数据信号Vdata传输至所述驱动晶体管T1的栅极，补偿所述驱动晶体管T1的阈值电压；\n\n[0079]所述发光阶段t3，所述驱动晶体管T1驱动所述发光器件D1发光，所述电位可变信号VI1动态补偿所述驱动晶体管T1的栅极电压Vg。\n\n[0080]其中，所述电位可变信号VI1在所述初始化阶段t1和所述补偿阶段t2为恒定信号，所述电位可变信号VI1在所述发光阶段t3随补偿前的所述驱动晶体管T1的栅极电压Vg连续上升或连续下降。\n\n[0081]具体地，在所述发光阶段t3，由于所述驱动晶体管T1的栅极受所述驱动晶体管T1的源极或漏极(B点)的影响，所述驱动晶体管T1的栅极电压Vg会出现连续的变动，因此，为使所述驱动晶体管T1的栅极电压Vg维持稳定，在幅值上所述电位可变信号VI1与补偿前的所述驱动晶体管T1的栅极电压Vg成正比；在时序上，所述电位可变信号VI1随补偿前的所述驱动晶体管T1的栅极电压Vg的下降而连续上升，或随补偿前的所述驱动晶体管T1的栅极电压Vg的上升连续下降，以使所述驱动晶体管T1的栅极电压Vg在补偿后维持稳定。\n\n[0082]在所述发光阶段t3，可通过驱动芯片提供所需的所述电位可变信号VI1。所述复位信号VI2可与所述电位可变信号VI1在所述初始化阶段t1和所述补偿阶段t2时的幅值相等，也可不相等，在此对其不再进行赘述。\n\n[0083]下面将结合图2A～图2B及图3A～图3B详细描述利用所述驱动方法驱动所述像素驱动电路的工作原理。\n\n[0084]请继续参阅图2A与图3A，以所述驱动晶体管T1、所述补偿晶体管T3、所述数据写入晶体管T4、所述第一开关晶体管T5、所述第二开关晶体管T6及所述复位晶体管T7为P型硅晶体管、所述初始化晶体管T2为N型氧化物晶体管；所述补偿晶体管T3与所述数据写入晶体管T4共用所述第二扫描信号Scan2为例；在第N帧周期(N Frame)内，包括所述初始化阶段t1、所述补偿阶段t2及所述发光阶段t3；\n\n[0085]在所述初始化阶段t1：所述初始化晶体管T2响应所述第一扫描信号Scan1，所述初始化晶体管T2导通，所述电位可变信号VI1传输至所述驱动晶体管T1的栅极；所述存储电容C1下极板接入所述电位可变信号VI1，所述存储电容C1的上极板与下极板之间电压差变大，所述存储电容C1充电，所述驱动晶体管T1的栅极电压Vg被所述电位可变信号VI1复位至低电平信号Vini，所述驱动晶体管T1导通，实现所述驱动晶体管T1的初始化。\n\n[0086]在所述补偿阶段t2：所述补偿晶体管T3、所述数据写入晶体管T4及所述复位晶体管T7响应所述第二扫描信号Scan2导通，所述数据信号Vdata传输至所述驱动晶体管T1的第一极(A点)；所述补偿晶体管T3导通使得所述驱动晶体管T1的栅极与第二极连接，具有补偿阈值电压Vth作用的所述数据信号Vdata被传输至所述驱动晶体管T1的栅极，所述存储电容C1的存在使得所述驱动晶体管T1的栅极电压Vg由Vini逐渐抬升直至使所述驱动晶体管T1充分导通，所述存储电容C1维持所述驱动晶体管T1的栅极电压Vg，从而实现对所述驱动晶体管T1的阈值电压Vth的补偿；所述复位晶体管T7的导通使得所述复位信号VI2被传输至所述发光器件D1的阳极，实现对所述发光器件D1的初始化。\n\n[0087]在所述发光阶段t3：所述第一开关晶体管T5和所述第二开关晶体管T6响应所述发光控制信号EM导通，所述驱动晶体管T1形成驱动电流驱动所述发光器件D1发光；利用处于截止状态的所述补偿晶体管T3降低所述驱动晶体管T1的第二极(B点)对所述驱动晶体管T1栅极(Q点)电压Vg的影响，利用处于截止状态的所述初始化晶体管T2的漏电流特性及所述电位可变信号VI1动态补偿因所述补偿晶体管T3的漏电流造成的对所述驱动晶体管T1的栅极电压Vg的影响，以使所述驱动晶体管T1的栅极电压Vg保持稳定；即Vg保持在Vdata+Vth，保证所述发光器件D1的稳定发光。\n\n[0088]与之相似地，请继续参阅图2B与图3B，以所述驱动晶体管T1、所述初始化晶体管T2、所述数据写入晶体管T4、所述第一开关晶体管T5、所述第二开关晶体管T6及所述复位晶体管T7为P型硅晶体管、所述补偿晶体管T3为N型氧化物晶体管；在第N帧周期(N Frame)内，包括所述初始化阶段t1、所述补偿阶段t2及所述发光阶段t3；\n\n[0089]在所述初始化阶段t1：所述初始化晶体管T2响应所述第一扫描信号Scan1，所述初始化晶体管T2导通，所述电位可变信号VI1传输至所述驱动晶体管T1的栅极；所述存储电容C1充电，所述驱动晶体管T1的栅极电压Vg被所述电位可变信号VI1复位至低电平信号Vini，所述驱动晶体管T1导通，实现所述驱动晶体管T1的初始化。\n\n[0090]在所述补偿阶段t2：所述补偿晶体管T3响应所述补偿控制信号Scan3导通，所述数据写入晶体管T4及所述复位晶体管T7响应所述第二扫描信号Scan2导通，所述数据信号Vdata传输至所述驱动晶体管T1的第一极(A点)；所述补偿晶体管T3导通使得所述驱动晶体管T1的栅极与第二极连接，具有补偿阈值电压Vth作用的所述数据信号Vdata被传输至所述驱动晶体管T1的栅极，所述存储电容C1的存在使得所述驱动晶体管T1的栅极电压Vg由Vini逐渐抬升直至使所述驱动晶体管T1充分导通，所述存储电容C1维持所述驱动晶体管T1的栅极电压Vg，从而实现对所述驱动晶体管T1的阈值电压Vth的补偿；所述复位晶体管T7的导通使得所述复位信号VI2被传输至所述发光器件D1的阳极，实现对所述发光器件D1的初始化。\n\n[0091]在所述发光阶段t3：所述第一开关晶体管T5和所述第二开关晶体管T6响应所述发光控制信号EM导通，所述驱动晶体管T1形成驱动电流驱动所述发光器件D1发光；利用处于截止状态的所述补偿晶体管T3降低所述驱动晶体管T1的第二极(B点)对所述驱动晶体管T1栅极(Q点)电压Vg的影响，利用处于截止状态的所述初始化晶体管T2的漏电流特性及所述电位可变信号VI1动态补偿因所述补偿晶体管T3的漏电流造成的对所述驱动晶体管T1的栅极电压Vg的影响，以使所述驱动晶体管T1的栅极电压Vg保持稳定；即Vg保持在Vdata+Vth，保证所述发光器件D1的稳定发光。\n\n[0092]请继续参阅图2A～图2B和图3A～图3B，在所述发光阶段t3，由于所述第一开关晶体管T5导通，所述第一电压端Vdd将信号Vdd1传输至所述驱动晶体管T1的第一极，所述驱动晶体管T1的栅极电压Vg与第一极(A点)电压之差Vgs等于Vg-Vdd1；因此，由Vg＝Vdata+Vth、Vgs＝Vg-Vdd1和驱动电流I＝(CoxμmW/L)*(Vgs-Vth)2/2(其中，Cox、μm、W、L分别为晶体管的单位面积沟道电容、沟道迁移率、沟道宽和沟道长)可得；所述驱动电流I＝(CoxμmW/L)*(Vg-Vdd1-Vg+Vdata)2/2＝(CoxμmW/L)*(Vdata-Vdd1)2/2；以此所述驱动电流I不受所述阈值电压Vth的变化的影响，保证所述发光器件D1发光的稳定性。\n\n[0093]所述电位可变信号VI1在所述初始化晶体管T2响应所述第一扫描信号Scan1、所述补偿晶体管T3响应所述补偿控制信号Scan3时为恒定低电平信号，在所述发光阶段t3为连续上升信号。\n\n[0094]在图2A～图2B所述的像素驱动电路中，均以所述驱动晶体管T1、所述数据写入晶体管T4、所述第一开关晶体管T5、所述第二开关晶体管T6及所述复位晶体管T7为P型晶体管为例进行说明，本领域的相关技术人员也可将其替换为N型晶体管，并将相应的部分信号进行反相实现上述功能，在此对其不再进行赘述。\n\n[0095]请参阅图4A～图4C，其为本申请的实施例提供的显示面板的结构示意图；如图5A～图5B，其为本申请的实施例提供的像素驱动电路的结构示意图。\n\n[0096]本申请还提供一种显示面板，包括：多个像素600及控制所述像素600发光的像素驱动电路；所述像素驱动电路包括：形成所述像素600的发光器件D1，被配置为向所述发光器件D1提供驱动电流的驱动晶体管T1，用于提供电位可变信号VI1的电位可变信号线VI11，初始化晶体管T2，以及，补偿晶体管T3；所述初始化晶体管T2和补偿晶体管T3具有不同材料的半导体层；\n\n[0097]所述补偿晶体管T3的栅极与补偿控制信号线S3连接，所述补偿晶体管T3的源极或漏极中的一者与所述驱动晶体管T1的栅极连接，源极或漏极中的另一者与所述驱动晶体管T1的源极或漏极中的一者连接；\n\n[0098]所述初始化晶体管T2的栅极与第一扫描信号线S1连接，所述初始化晶体管T2的源极或漏极中的一者与所述电位可变信号线VI11连接，源极或漏极中的另一者与所述驱动晶体管T1的栅极连接。\n\n[0099]其中，所述初始化晶体管T2和所述补偿晶体管T3的所述半导体层601和602的载流子迁移率不同；所述初始化晶体管T2的所述半导体层601的载流子迁移率大于所述补偿晶体管T3的所述半导体层602的载流子迁移率；或，所述初始化晶体管T2的所述半导体层601的载流子迁移率小于所述补偿晶体管T3的所述半导体层602的载流子迁移率。\n\n[0100]进一步地，所述初始化晶体管T2和所述补偿晶体管T3的所述半导体层601和602包括P型晶体管半导体或N型晶体管半导体。\n\n[0101]进一步地，所述初始化晶体管T2的所述半导体层601包括硅半导体层或氧化物半导体层的其中之一，所述补偿晶体管T3的所述半导体层602包括硅半导体层或氧化物半导体层的其中另一。\n\n[0102]请继续参阅图5A～图5B，在一些实施例中，所述像素驱动电路还包括：\n\n[0103]数据写入晶体管T4，所述数据写入晶体管T4的栅极与第二扫描信号线S2连接，所述数据写入晶体管T4的源极或漏极中的一者与数据信号线Data连接，源极或漏极中的另一者与所述驱动晶体管T1的源极或漏极中的一者连接；\n\n[0104]存储电容C1，所述存储电容C1的上极板与第一电压端Vdd连接，下极板与所述初始化晶体管T2的源极或漏极中连接所述驱动晶体管T1栅极的一者、所述补偿晶体管T3的源极或漏极中连接所述驱动晶体管T1栅极的一者及所述驱动晶体管T1的栅极连接。\n\n[0105]所述像素驱动电路还包括：第一开关晶体管T5，所述第一开关晶体管T5的栅极与发光控制信号线EM1连接，所述第一开关晶体管T5的源极或漏极中的一者与第一电压端Vdd连接，源极或漏极中的另一者与所述驱动晶体管T1的源极或漏极中的一者连接；\n\n[0106]第二开关晶体管T6，所述第二开关晶体管T6的栅极与所述发光控制信号线EM1连接，所述第二开关晶体管T6的源极或漏极中的一者所述驱动晶体管T1的源极或漏极中的一者连接，源极或漏极中的另一者与所述发光器件D1的阳极连接。\n\n[0107]所述像素驱动电路还包括：复位晶体管T7，所述复位晶体管T7的栅极与第二扫描信号线S2连接，所述复位晶体管T7的源极或漏极中的一者与复位信号线VI12连接，源极或漏极中的另一者与所述发光器件D1的阳极连接。\n\n[0108]进一步地，所述复位晶体管T7与所述初始化晶体管T2可以具有不同材料的半导体层，也可具有相同材料的半导体层，如图5A和图5B所示。在如图5A所示的像素驱动电路中，所述复位晶体管T7与所述初始化晶体管T2具有不同材料的半导体层；进一步地，所述复位晶体管T7与所述补偿晶体管T3具有相同材料的半导体层。而在如图5B所示的像素驱动电路中，所述复位晶体管T7与所述初始化晶体管T2具有相同材料的半导体层；进一步地，所述复位晶体管T7与所述补偿晶体管T3具有不同材料的半导体层。\n\n[0109]其中，在如图5A所示的所示像素驱动电路中，所述补偿晶体管T3可与所述补偿控制信号线S3连接，也可与所述第二扫描信号线S2连接，以降低制程难度。\n\n[0110]在如图5A～图5B所示的像素驱动电路中均以所述驱动晶体管T1、所述数据写入晶体管T4、所述第一开关晶体管T5、所述第二开关晶体管T6及所述复位晶体管T7为P型晶体管为例，本领域的相关技术人员也可用N型晶体管实现，在此对其不再进行赘述。\n\n[0111]在所述显示面板的所述像素驱动电路中，均以所述发光器件D1采用共阴极接法(即所述发光器件D1的阴极接第二电压端Vss)为例，本领域相关技术人员亦可采用共阳极接法(即所述发光器件D1的阳极接所述第一电压端Vdd)，在此对其不再进行赘述。\n\n[0112]请继续参阅图4A～图4C，所述显示面板还包括衬底700，所述像素驱动电路位于所述衬底700上，所述发光器件D1位于所述像素驱动电路远离所述衬底700的一侧。\n\n[0113]所述衬底700包括柔性衬底与刚性衬底；所述衬底700的制备材料包括玻璃、石英、陶瓷、塑料或聚合物树脂等；聚合物树脂包括聚醚砜、聚丙烯酸酯、聚芳酯、聚醚酰亚胺、聚萘二甲酸乙二醇酯、聚对苯二甲酸乙二醇酯、聚苯硫醚、聚烯丙基酯、聚酰亚胺、聚碳酸酯、三乙酸纤维素、醋酸丙酸纤维素中的至少一种。\n\n[0114]所述显示面板还包括：\n\n[0115]第一半导体层701，形成于所述衬底700上，所述第一半导体层701包括源极区701a，沟道区701b，漏极区701c；所述第一半导体层701的衬底材料可以为N型或者P型硅半导体。\n\n[0116]第一绝缘层702，覆盖所述衬底700及所述第一半导体层701，所述第一绝缘层702的制备材料包括氮化硅、氧化硅、氧氮化硅、氧化铝、氧化钽、氧化铪、氧化锆或氧化钛中的至少一种。\n\n[0117]第一栅极703，形成于所述第一绝缘层702远离所述第一半导体层701的一侧，且与所述第一半导体层701对位设置，所述第一栅极703与所述源极区701a、所述沟道区701b、所述漏极区701c构成硅晶体管的源极、栅极与漏极，所述第一栅极703的制备材料包括钼、铝、银、镁、金、镍、钛、钽、钨(W)等中的至少一种。进一步的，所述第一栅极703的制备材料为钼。\n\n[0118]第二绝缘层704，形成于所述第一栅极703远离所述衬底700的一侧，所述第二绝缘层704的制备材料包括氮化硅、氧化硅、氧氮化硅、氧化铝、氧化钽、氧化铪、氧化锆或氧化钛中的至少一种。\n\n[0119]第二栅极层，形成于所述第二绝缘层704远离所述第一栅极703的一侧，所述第二栅极层包括与所述第一栅极703对位设置的第二栅极7051以及远离所述第二栅极7051设置的第三栅极7052；所述第二栅极7051与所述第一栅极703构成所述像素驱动电路中的所述存储电容C1的上极板与下极板。所述第二栅极层的制备材料包括钼、铝、银、镁、金、镍、钛、钽、钨(W)等中的至少一种。进一步的，所述第二栅极层的制备材料为钼。\n\n[0120]第三绝缘层706，形成于所述第二栅极层远离所述衬底700的一侧，所述第三绝缘层706的制备材料包括氮化硅、氧化硅、氧氮化硅、氧化铝、氧化钽、氧化铪、氧化锆或氧化钛中的至少一种。\n\n[0121]第二半导体层707，位于所述第三绝缘层706远离所述衬底700的一侧，所述第二半导体层707包括源极区707a，沟道区707b，漏极区707c；所述第二半导体层707的材料为氧化物半导体，所述氧化物半导体可包括锌、铟、镓、锡或钛的金属的氧化物中的至少一种；进一步地，所述氧化物半导体可包括氧化锌、氧化锌锡、氧化锌铟、氧化铟、氧化钛、氧化铟镓锌、氧化铟锌锡等中的至少一种。\n\n[0122]第四绝缘层708，形成于所述第二半导体层707远离所述衬底700的一侧，所述第四绝缘层708的制备材料包括氮化硅、氧化硅、氧氮化硅、氧化铝、氧化钽、氧化铪、氧化锆或氧化钛中的至少一种。\n\n[0123]第四栅极709，形成于所述第四绝缘层708远离所述第二半导体层707的一侧，且与所述第三栅极7052对位设置；所述第四栅极709与所述第二半导体层707的所述源极区707a、所述沟道区707b、所述漏极区707c形成氧化物晶体管的源极、栅极、漏极，其中第三栅极7052构成氧化物晶体管中的底栅部分。所述第四栅极709的制备材料包括钼、铝、银、镁、金、镍、钛、钽、钨(W)等中的至少一种。进一步的，所述第四栅极709的制备材料为钼。\n\n[0124]第五绝缘层710，形成于所述第四栅极709远离所述衬底700的一侧，所述第五绝缘层710的制备材料包括氮化硅、氧化硅、氧氮化硅、氧化铝、氧化钽、氧化铪、氧化锆或氧化钛中的至少一种。\n\n[0125]第一金属层711，形成于所述第五绝缘层710远离所述衬底700的一侧，所述第一金属层711通过过孔与所述硅晶体管、所述氧化物晶体管的栅极、源极、漏极连接；所述第一金属层711的制备材料包括金、银、铜、锂、钠、钾、镁、铝、锌中的至少一种。\n\n[0126]第六绝缘层712，形成于所述第一金属层711远离所述衬底700的一侧，所述第六绝缘层712可以为采用有机材料或者无机材料及其混合物。\n\n[0127]阳极713，形成于所述第六绝缘层712远离所述衬底700的一侧，所述阳极713的制备材料包括氧化铟锡、氧化铟锡锌中的一种，或氧化铟锡、氧化铟锡锌与银的组合，所述阳极713通过过孔与所述第一金属层711电性连接。\n\n[0128]像素定义层716，形成于所述阳极713远离所述衬底700的一侧，所述像素定义层716的开孔形状与所述像素600的图案一致。\n\n[0129]发光层715，通过所述像素定义层716上的所述开孔与所述阳极713接触，所述发光层715包括有机发光材料；进一步地，所述发光层715还包括荧光材料、量子点材料、钙钛矿材料中的至少一种。\n\n[0130]阴极714，位于所述发光层715及所述像素定义层716远离所述阳极713的一侧；所述阳极713，所述阴极714及位于所述阳极713和所述阴极714之间的所述发光层715形成所述发光器件D1。\n\n[0131]封装层719，位于所述发光器件D1远离所述衬底700的一侧，所述封装层719的制备材料包括有机材料与无机材料的组合。\n\n[0132]在垂直于所述衬底700的方向上，所述第一半导体层701、所述第一绝缘层702、所述第一栅极703、所述第二绝缘层704、所述第二栅极层、所述第三绝缘层706、所述第二半导体层707、所述第四绝缘层708、所述第四栅极709、所述第五绝缘层710及第一金属层711形成所述像素驱动电路。\n\n[0133]为避免所述封装层719中的氢元素与氧元素对所述氧化物晶体管造成影响，所述显示面板还包括位于所述像素驱动电路与所述发光器件D1之间的导电层720，在俯视视角下，所述导电层720与所述氧化物晶体管的正投影重合，且所述导电层720覆盖所述氧化物晶体管，如图4B所示。进一步地，若所述初始化晶体管T2为氧化物晶体管，所述导电层720与所述初始化晶体管T2的正投影重合，且所述导电层720覆盖所述初始化晶体管T2；与之相似地，若所述补偿晶体管T3为氧化物晶体管，所述导电层720与所述补偿晶体管T3的正投影重合，且所述导电层720覆盖所述补偿晶体管T3。\n\n[0134]具体地，所述显示面板还包括第七绝缘层717，所述第七绝缘层717位于所述导电层720靠近所述衬底700的一侧，所述导电层720位于所述第六绝缘层712与所述第七绝缘层717之间，所述导电层720通过所述第七绝缘层717的开孔与第一金属层711连接，所述导电层720的制备材料包括金、银、铜、锂、钠、钾、镁、铝、锌中的至少一种；所述第七绝缘层717的制备材料包括有机材料或者无机材料及其混合物。\n\n[0135]请继续参与图4A～图4B，所述显示面板还包括缓冲层718，所述缓冲层718的制备材料包括有机材料与无机材料及其组合；具体地，缓冲层718的制备材料包括氮化硅、氧化硅、氮氧化硅等。\n\n[0136]请继续参阅图4C，所述在俯视视角下，多个所述像素600分别与所述电位可变信号线VI11和所述复位信号线VI12连接。\n\n[0137]所述电位可变信号线VI11可位于所述显示面板的左右边框区域并从所述左右边框区域向所述显示面板的显示区延伸，所述复位信号线VI12可位于所述显示面板的下边框区域并从所述下边框区域向所述显示面板的显示区延伸。\n\n[0138]由于所述复位信号线VI12可与驱动芯片连接，利用所述驱动芯片提供所需的所述电位可变信号VI1，所以为降低对所述显示面板的左右边框的影响，所述电位可变信号线VI11可位于所述显示面板的下边框区域并从所述下边框区域向所述显示面板的显示区延伸，所述复位信号线VI12可位于所述显示面板的左右边框区域并从所述左右边框区域向所述显示面板的显示区延伸。\n\n[0139]进一步地，所述显示面板还可包括彩色滤光片、触控电极等未示出部分。\n\n[0140]本申请实施例提供的像素驱动电路及其驱动方法、显示面板，所述像素驱动电路包括：发光器件D1、驱动晶体管T1以及补偿模块100；所述补偿模块100至少包括：初始化晶体管T2及补偿晶体管T3；所述初始化晶体管T2用于响应第一扫描信号Scan1并将电位可变信号VI1传输至所述驱动晶体管T1的栅极，初始化所述驱动晶体管T1的栅极电压Vg；所述补偿晶体管T3用于响应补偿控制信号Scan3并将具有补偿阈值电压的数据信号Vdata传输至所述驱动晶体管T1的栅极；其中，所述初始化晶体管T2与所述补偿晶体管T3的类型不同；所述电位可变信号VI1在发光阶段动态补偿所述驱动晶体管T1的栅极电压Vg，以在所述发光阶段t3维持所述驱动晶体管T1的栅极电压Vg稳定，降低所述驱动晶体管T1的源极或漏极对所述驱动晶体管T1栅极的影响，可以改善显示面板的显示效果。\n\n[0141]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0142]以上对本申请实施例所提供的像素驱动电路及其驱动方法、显示面板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10840, 23894, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种拼接显示屏。\n\n背景技术\n\n[0002]目前，传统显示屏均需通过覆晶薄膜或柔性电路板绑定的模组工艺将面板所需讯号输入到面内。因面板设计上通常需要先通过扇形区将面内信号线进行收束，将其集中到一小块绑定区域，再将覆晶薄膜或柔性电路板绑定在绑定区域，在印刷电路板和玻璃基板之间形成电性连接，从而使得键合区宽度通常较大。进一步的，键合区过大时，会影响显示屏的外观品位，若用于拼接屏用途时，会有明显的拼缝，进而影响拼接显示的效果。由于覆晶薄膜或柔性电路板基材聚酰亚胺具有良好的回弹性，不易弯折，也会增加拼缝，影响拼接显示的效果。\n\n发明内容\n\n[0003]本申请提供一种拼接显示屏，以减小拼接显示屏之间的拼接缝。\n\n[0004]本申请提供一种拼接显示屏，包括：\n\n[0005]若干面板，每一面板包括相对设置的显示面和与之相对设置的背面，沿所述显示面朝向所述背面的方向为第一方向；以及\n\n[0006]若干覆晶薄膜，每一覆晶薄膜包括第一表面和相对设置的第二表面，沿所述第一表面朝向所述第二表面的方向为第二方向，一所述覆晶薄膜夹设于每两相邻的所述面板之间，所述第一方向与第二方向垂直。\n\n[0007]在本申请所提供的拼接显示屏中，所述拼接显示屏还包括胶层，所述胶层粘合于所述面板和覆晶薄膜之间。\n\n[0008]在本申请所提供的拼接显示屏中，所述每两相邻所述面板之间的距离为0.1毫米-0.6毫米。\n\n[0009]在本申请所提供的拼接显示屏中，所述覆晶薄膜的厚度为0.1毫米-0.6毫米。\n\n[0010]在本申请所提供的拼接显示屏中，所述拼接显示屏还包括若干金属线，所述若干金属线连接所述面板和所述覆晶薄膜。\n\n[0011]在本申请所提供的拼接显示屏中，所述每一所述面板的显示面包括第一侧，所述第一侧包括若干第一焊盘，所述覆晶薄膜靠近所述显示面的一侧包括若干第二焊盘，所述第一焊盘与所述第二焊盘一一对应设置，所述金属线连接所述第一焊盘和所述第二焊盘。\n\n[0012]在本申请所提供的拼接显示屏中，所述每一所述面板的显示面包括第一侧和第二侧，所述第一侧与所述第二侧相邻设置，所述第一侧包括若干第一焊盘，所述第二侧包括若干第三焊盘，所述覆晶薄膜靠近所述显示面的一侧具有若干第二焊盘，所述第二焊盘分别与所述第一焊盘和所述第三焊盘一一对应设置，所述第一焊盘与所述第二焊盘通过所述金属线连接，所述第三焊盘与所述第二焊盘通过所述金属线连接。\n\n[0013]在本申请所提供的拼接显示屏中，所述拼接显示屏还包括封胶层，所述封胶层覆盖所述覆晶薄膜和所述面板。\n\n[0014]在本申请所提供的拼接显示屏中，所述拼接显示屏还包括发光二极管，所述发光二极管阵列设置于每一所述面板的显示面上。\n\n[0015]在本申请所提供的拼接显示屏中，所述第一焊盘的长度、所述第二焊盘的长度和第三焊盘的长度为1微米-99微米。\n\n[0016]本申请提供一种拼接显示屏，所述拼接显示屏包括若干面板和若干覆晶薄膜，每一面板包括相对设置的显示面和与之相对设置的背面，沿所述显示面朝向所述背面的方向为第一方向，每一覆晶薄膜包括相对设置的第一表面和第二表面，沿所述第一表面朝向所述第二表面的方向为第二方向，一所述覆晶薄膜夹设于每两相邻的所述面板之间，所述第一方向与第二方向垂直。通过在每两相邻的面板之间夹设覆晶薄膜，减少了覆晶薄膜弯折不充分所占用的空间，进而减小了键合区的宽度，进而减小了每两相邻的面板之间的拼接缝。\n\n附图说明\n\n[0017]为了更清楚地说明本申请中的技术方案，下面将对实施方式描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施方式，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0018]图1为本申请提供的拼接显示屏的第一种俯视图。\n\n[0019]图2为本申请提供的拼接显示屏沿AB线的截面图。\n\n[0020]图3为本申请提供的拼接显示屏的第二种俯视图。\n\n具体实施方式\n\n[0021]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0022]请参阅图1和图2，图1为本申请提供的拼接显示屏的第一种俯视图。图2为本申请提供的拼接显示屏沿AB线的截面图。本申请提供一种拼接显示屏10。所述拼接显示屏10包括若干面板100和若干覆晶薄膜200。\n\n[0023]每一面板100包括相对设置的显示面110和与之相对设置的背面120。沿所述显示面110朝向所述背面120的方向为第一方向101。所述每两相邻所述面板100之间的距离D为0.1毫米-0.6毫米。具体地，所述每两相邻所述面板100之间的距离D可以为0.2毫米、0.3毫米或0.5毫米等。每一所述面板100的显示面110包括第一侧111。所述第一侧111包括若干第一焊盘130。所述第一焊盘130的长度L1为1微米-99微米。具体地，所述第一焊盘130的长度L1可以为5微米、20微米、60微米或80微米等。\n\n[0024]在另一实施例中，所述拼接显示屏10还包括发光二极管300。所述发光二极管300阵列设置于每一所述面板100的显示面110上。\n\n[0025]每一覆晶薄膜200包括第一表面210和相对设置的第二表面220。沿所述第一表面210朝向所述第二表面220的方向为第二方向201。一所述覆晶薄膜200夹设于每两相邻的所述面板100之间。所述第一方向101与第二方向201垂直。所述覆晶薄膜200的厚度T为0.1毫米-0.6毫米。具体地，所述覆晶薄膜200的厚度T可以为0.2毫米0.3毫米或0.5毫米等。所述覆晶薄膜200靠近所述显示面110的一侧包括若干第二焊盘230。所述第一焊盘130与所述第二焊盘230一一对应设置。所述第二焊盘230的长度L2为1微米-99微米。具体地，所述第二焊盘230的长度L2可以为5微米、20微米、60微米或80微米等。\n\n[0026]在另一实施例中，所述拼接显示屏10还包括胶层400。所述胶层400粘合于所述面板100和覆晶薄膜200之间。\n\n[0027]在本申请中，将覆晶薄膜通过胶层粘合于每两相邻的面板的缝隙之间，减少了覆晶薄膜弯折不充分所占用的空间，进而减小了键合区的宽度，进而减小了每两相邻的面板之间的拼接缝。\n\n[0028]在另一实施例中，所述拼接显示屏10还包括若干金属线500。每一所述金属线500与所述第一焊盘130及所述第二焊盘230电气连接。\n\n[0029]在本申请中，通过金属线将覆晶薄膜与面板直接连接，将驱动讯号输入到面内，进而驱动面板正常工作，避免了采用覆晶薄膜或柔性电路板绑定的工艺，并且，因拼接显示屏上的像素较小，采用金属线连接覆晶薄膜和面板，可以兼容像素分辨率范围的位置精度。\n\n[0030]在另一实施例中，所述拼接显示屏100还包括封胶层600。所述封胶层600覆盖所述覆晶薄膜200和所述面板100。\n\n[0031]请参阅图3，图3为本申请提供的拼接显示屏的第二种俯视图。需要说明的是，图3与图1的不同之处在于：每一所述面板100的显示面110还包第二侧112。所述第一侧111与所述第二侧112相邻设置。所述第二侧112包括若干第三焊盘140。所述第二焊盘230分别与所述第一焊盘130和所述第三焊盘140一一对应设置。所述第三焊盘140与所述第二焊盘230通过所述金属线500连接。其他结构与图1相同，此处不再赘述。\n\n[0032]本申请的拼接显示屏可以为迷你发光二极管拼接显示屏或微型发光二极管拼接显示屏。\n\n[0033]本申请提供一种拼接显示屏，所述拼接显示屏包括若干面板和若干覆晶薄膜，每一面板包括相对设置的显示面和与背面，沿所述显示面朝向所述背面的方向为第一方向，每一覆晶薄膜包括相对设置的第一表面和第二表面，沿所述第一表面朝向所述第二表面的方向为第二方向，一所述覆晶薄膜夹设于每两相邻的所述面板之间，所述第一方向与第二方向垂直。通过在每两相邻的面板之间夹设覆晶薄膜，减少了覆晶薄膜弯折不充分所占用的空间，进而减小了键合区的宽度，进而减小了每两相邻的面板之间的拼接缝。\n\n[0034]以上对本申请实施方式提供了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施方式的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种拼接显示屏。\n\n背景技术\n\n[0002]目前，传统显示屏均需通过覆晶薄膜或柔性电路板绑定的模组工艺将面板所需讯号输入到面内。因面板设计上通常需要先通过扇形区将面内信号线进行收束，将其集中到一小块绑定区域，再将覆晶薄膜或柔性电路板绑定在绑定区域，在印刷电路板和玻璃基板之间形成电性连接，从而使得键合区宽度通常较大。进一步的，键合区过大时，会影响显示屏的外观品位，若用于拼接屏用途时，会有明显的拼缝，进而影响拼接显示的效果。由于覆晶薄膜或柔性电路板基材聚酰亚胺具有良好的回弹性，不易弯折，也会增加拼缝，影响拼接显示的效果。\n\n发明内容\n\n[0003]本申请提供一种拼接显示屏，以减小拼接显示屏之间的拼接缝。\n\n[0004]本申请提供一种拼接显示屏，包括：\n\n[0005]若干面板，每一面板包括相对设置的显示面和与之相对设置的背面，沿所述显示面朝向所述背面的方向为第一方向；以及\n\n[0006]若干覆晶薄膜，每一覆晶薄膜包括第一表面和相对设置的第二表面，沿所述第一表面朝向所述第二表面的方向为第二方向，一所述覆晶薄膜夹设于每两相邻的所述面板之间，所述第一方向与第二方向垂直。\n\n[0007]在本申请所提供的拼接显示屏中，所述拼接显示屏还包括胶层，所述胶层粘合于所述面板和覆晶薄膜之间。\n\n[0008]在本申请所提供的拼接显示屏中，所述每两相邻所述面板之间的距离为0.1毫米-0.6毫米。\n\n[0009]在本申请所提供的拼接显示屏中，所述覆晶薄膜的厚度为0.1毫米-0.6毫米。\n\n[0010]在本申请所提供的拼接显示屏中，所述拼接显示屏还包括若干金属线，所述若干金属线连接所述面板和所述覆晶薄膜。\n\n[0011]在本申请所提供的拼接显示屏中，所述每一所述面板的显示面包括第一侧，所述第一侧包括若干第一焊盘，所述覆晶薄膜靠近所述显示面的一侧包括若干第二焊盘，所述第一焊盘与所述第二焊盘一一对应设置，所述金属线连接所述第一焊盘和所述第二焊盘。\n\n[0012]在本申请所提供的拼接显示屏中，所述每一所述面板的显示面包括第一侧和第二侧，所述第一侧与所述第二侧相邻设置，所述第一侧包括若干第一焊盘，所述第二侧包括若干第三焊盘，所述覆晶薄膜靠近所述显示面的一侧具有若干第二焊盘，所述第二焊盘分别与所述第一焊盘和所述第三焊盘一一对应设置，所述第一焊盘与所述第二焊盘通过所述金属线连接，所述第三焊盘与所述第二焊盘通过所述金属线连接。\n\n[0013]在本申请所提供的拼接显示屏中，所述拼接显示屏还包括封胶层，所述封胶层覆盖所述覆晶薄膜和所述面板。\n\n[0014]在本申请所提供的拼接显示屏中，所述拼接显示屏还包括发光二极管，所述发光二极管阵列设置于每一所述面板的显示面上。\n\n[0015]在本申请所提供的拼接显示屏中，所述第一焊盘的长度、所述第二焊盘的长度和第三焊盘的长度为1微米-99微米。\n\n[0016]本申请提供一种拼接显示屏，所述拼接显示屏包括若干面板和若干覆晶薄膜，每一面板包括相对设置的显示面和与之相对设置的背面，沿所述显示面朝向所述背面的方向为第一方向，每一覆晶薄膜包括相对设置的第一表面和第二表面，沿所述第一表面朝向所述第二表面的方向为第二方向，一所述覆晶薄膜夹设于每两相邻的所述面板之间，所述第一方向与第二方向垂直。通过在每两相邻的面板之间夹设覆晶薄膜，减少了覆晶薄膜弯折不充分所占用的空间，进而减小了键合区的宽度，进而减小了每两相邻的面板之间的拼接缝。\n\n附图说明\n\n[0017]为了更清楚地说明本申请中的技术方案，下面将对实施方式描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施方式，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0018]图1为本申请提供的拼接显示屏的第一种俯视图。\n\n[0019]图2为本申请提供的拼接显示屏沿AB线的截面图。\n\n[0020]图3为本申请提供的拼接显示屏的第二种俯视图。\n\n具体实施方式\n\n[0021]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0022]请参阅图1和图2，图1为本申请提供的拼接显示屏的第一种俯视图。图2为本申请提供的拼接显示屏沿AB线的截面图。本申请提供一种拼接显示屏10。所述拼接显示屏10包括若干面板100和若干覆晶薄膜200。\n\n[0023]每一面板100包括相对设置的显示面110和与之相对设置的背面120。沿所述显示面110朝向所述背面120的方向为第一方向101。所述每两相邻所述面板100之间的距离D为0.1毫米-0.6毫米。具体地，所述每两相邻所述面板100之间的距离D可以为0.2毫米、0.3毫米或0.5毫米等。每一所述面板100的显示面110包括第一侧111。所述第一侧111包括若干第一焊盘130。所述第一焊盘130的长度L1为1微米-99微米。具体地，所述第一焊盘130的长度L1可以为5微米、20微米、60微米或80微米等。\n\n[0024]在另一实施例中，所述拼接显示屏10还包括发光二极管300。所述发光二极管300阵列设置于每一所述面板100的显示面110上。\n\n[0025]每一覆晶薄膜200包括第一表面210和相对设置的第二表面220。沿所述第一表面210朝向所述第二表面220的方向为第二方向201。一所述覆晶薄膜200夹设于每两相邻的所述面板100之间。所述第一方向101与第二方向201垂直。所述覆晶薄膜200的厚度T为0.1毫米-0.6毫米。具体地，所述覆晶薄膜200的厚度T可以为0.2毫米0.3毫米或0.5毫米等。所述覆晶薄膜200靠近所述显示面110的一侧包括若干第二焊盘230。所述第一焊盘130与所述第二焊盘230一一对应设置。所述第二焊盘230的长度L2为1微米-99微米。具体地，所述第二焊盘230的长度L2可以为5微米、20微米、60微米或80微米等。\n\n[0026]在另一实施例中，所述拼接显示屏10还包括胶层400。所述胶层400粘合于所述面板100和覆晶薄膜200之间。\n\n[0027]在本申请中，将覆晶薄膜通过胶层粘合于每两相邻的面板的缝隙之间，减少了覆晶薄膜弯折不充分所占用的空间，进而减小了键合区的宽度，进而减小了每两相邻的面板之间的拼接缝。\n\n[0028]在另一实施例中，所述拼接显示屏10还包括若干金属线500。每一所述金属线500与所述第一焊盘130及所述第二焊盘230电气连接。\n\n[0029]在本申请中，通过金属线将覆晶薄膜与面板直接连接，将驱动讯号输入到面内，进而驱动面板正常工作，避免了采用覆晶薄膜或柔性电路板绑定的工艺，并且，因拼接显示屏上的像素较小，采用金属线连接覆晶薄膜和面板，可以兼容像素分辨率范围的位置精度。\n\n[0030]在另一实施例中，所述拼接显示屏100还包括封胶层600。所述封胶层600覆盖所述覆晶薄膜200和所述面板100。\n\n[0031]请参阅图3，图3为本申请提供的拼接显示屏的第二种俯视图。需要说明的是，图3与图1的不同之处在于：每一所述面板100的显示面110还包第二侧112。所述第一侧111与所述第二侧112相邻设置。所述第二侧112包括若干第三焊盘140。所述第二焊盘230分别与所述第一焊盘130和所述第三焊盘140一一对应设置。所述第三焊盘140与所述第二焊盘230通过所述金属线500连接。其他结构与图1相同，此处不再赘述。\n\n[0032]本申请的拼接显示屏可以为迷你发光二极管拼接显示屏或微型发光二极管拼接显示屏。\n\n[0033]本申请提供一种拼接显示屏，所述拼接显示屏包括若干面板和若干覆晶薄膜，每一面板包括相对设置的显示面和与背面，沿所述显示面朝向所述背面的方向为第一方向，每一覆晶薄膜包括相对设置的第一表面和第二表面，沿所述第一表面朝向所述第二表面的方向为第二方向，一所述覆晶薄膜夹设于每两相邻的所述面板之间，所述第一方向与第二方向垂直。通过在每两相邻的面板之间夹设覆晶薄膜，减少了覆晶薄膜弯折不充分所占用的空间，进而减小了键合区的宽度，进而减小了每两相邻的面板之间的拼接缝。\n\n[0034]以上对本申请实施方式提供了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施方式的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10841, 23895, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种显示模组。\n\n背景技术\n\n[0002]在传统的显示屏的制作工艺中，均需通过COF(Chip On Film，覆晶薄膜) /FPC(Flexible Printed Circuit，柔性电路板)绑定的模组工艺将面板所需讯号输入到面内。出于绑定工艺的限制，面板设计上通常需要先通过扇出区将面内信号线进行收束，将其集中到一小块绑定区域，再将COF/FPC绑定在该区域，最后再PCB(Printed Circuit Board，印制电路板)和玻璃基板之间形成电性连接，从而使得边框区宽度较大，从而对显示屏的外观品位有较大影响，若用于拼接屏用途时，则会出现明显的拼缝，影响拼接显示的效果。\n\n发明内容\n\n[0003]为解决上述问题，本发明提供一种显示模组，所述显示模组包括：\n\n[0004]显示面板，包括显示区与设于所述显示区外侧的边框区，所述边框区中设有多个焊盘；\n\n[0005]印制电路板；以及\n\n[0006]多条绑定导线，一端一一绑定于所述多个焊盘上，另一端与所述印制电路板电性连接。\n\n[0007]进一步地，所述边框区包括设于所述显示区外侧的扇出区，以及设于所述扇出区外侧的绑定区，所述多个焊盘设于所述绑定区。\n\n[0008]进一步地，所述边框区包括设于所述显示区外侧的绑定区，所述显示区中的金属走线直接延伸至所述绑定区中，并在末端与所述多个焊盘一一电性连接。\n\n[0009]进一步地，所述多条绑定导线的一端通过锡膏绑定于所述多个焊盘上。\n\n[0010]进一步地，所述绑定导线的材料为金。\n\n[0011]进一步地，所述多条绑定导线相互间隔设置。\n\n[0012]进一步地，所述多条绑定导线被绝缘胶层包覆。\n\n[0013]进一步地，所述显示模组还包括驱动芯片，设于所述印制电路板上。\n\n[0014]进一步地，藉由所述绑定导线的弯折，所述印制电路板固定于所述显示面板与出光方向相对的背面。\n\n[0015]进一步地，所述显示面板选自液晶显示面板，OLED显示面板以及微型发光二极管显示面板。\n\n[0016]有益效果：本发明实施例提供了一种显示模组，包括显示面板，所述显示面板包括显示区与设于所述显示区外侧的边框区，所述边框区中设有多个焊盘；印制电路板；以及多条绑定导线，一端一一绑定于所述多个焊盘上，另一端与所述印制电路板电性连接。利用绑定导线将印制电路板与显示面板上的绑定焊盘直接相连，因绑定导线相较现常用的柔性电路板具有更好的弯折性能，且绑定导线所需的绑定焊盘的大小也较柔性电路板所需的绑定焊盘的大小更小，即可有效缩减显示模组边框的宽度，提升显示模组的外观效果，当其应用于拼接显示设备时，也能拥有更微小的拼缝。\n\n附图说明\n\n[0017]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0018]图1是现有技术提供的一种显示模组的平面结构示意图；\n\n[0019]图2是本发明实施例提供的一种显示模组的平面结构示意图；\n\n[0020]图3是本发明实施例提供的一种显示模组的截面结构示意图；\n\n[0021]图4是本发明实施例提供的另一种显示模组的平面结构示意图。\n\n具体实施方式\n\n[0022]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0023]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0024]在本申请中，“示例性”一词用来表示“用作例子、例证或说明”。本申请中被描述为“示例性”的任何实施例不一定被解释为比其它实施例更优选或更具优势。为了使本领域任何技术人员能够实现和使用本发明，给出了以下描述。在以下描述中，为了解释的目的而列出了细节。应当明白的是，本领域普通技术人员可以认识到，在不使用这些特定细节的情况下也可以实现本发明。在其它实例中，不会对公知的结构和过程进行详细阐述，以避免不必要的细节使本发明的描述变得晦涩。因此，本发明并非旨在限于所示的实施例，而是与符合本申请所公开的原理和特征的最广范围相一致。\n\n[0025]请参阅图1提供的一种现有的显示模组平面结构示意图，所述显示模组100 通常包括：\n\n[0026]显示面板110，所述显示面板通常包括显示区111，以及设于显示区外侧的边框区112，受绑定工艺的限制，所述边框区112包括扇出区1121，首先将显示区111的金属走线(图中未示出，通常包括信号线与扫描线)整理并扇出，将宽度缩小，延伸至绑定区1122并与绑定区1122中的焊盘(图中未示出)一一连接；\n\n[0027]覆晶薄膜120，与所述绑定区1122中的焊盘电性连接；\n\n[0028]印制电路板130，与所述覆晶薄膜120电性连接。\n\n[0029]在显示模组100中，受限于覆晶薄膜120的绑定工艺限制，所述边框区112 的宽度需求较宽，从而使得显示面板的非显示边框较宽，同时覆晶薄膜120的基材聚酰亚胺膜具有良好的回弹性，弯折性能较差，导致弯折后形成的宽度较宽，当作为拼接显示设备时，也会导致较宽的拼缝。\n\n[0030]基于上述，本发明实施例提供了一种显示模组，结合图2示出的平面结构示意图与图3示出的截面结构示意图，以下分别进行详细说明。\n\n[0031]所述显示模组200包括：\n\n[0032]显示面板210，包括显示区211与设于所述显示区211外侧的边框区212，所述边框区212中设有多个焊盘(图中未示出)；\n\n[0033]印制电路板230；以及\n\n[0034]多条绑定导线220(图中未示出具体导线形状)，一端一一绑定于所述多个焊盘21221上，另一端与所述印制电路板230电性连接，从而实现印制电路板230 与所述显示面板210的电性连接，以实现信号传输。\n\n[0035]在本实施例提供的显示模组中，利用绑定导线将印制电路板与显示面板上的绑定焊盘直接相连，因绑定导线相较现常用的柔性电路板具有更好的弯折性能，且绑定导线所需的绑定焊盘的大小也较柔性电路板所需的绑定焊盘的大小更小，即可有效缩减显示模组边框的宽度，提升显示模组的外观效果，当其应用于拼接显示设备时，也能拥有更微小的拼缝。\n\n[0036]在一些实施例中，请继续参阅图2，所述边框区212包括设于所述显示区211 外侧的扇出区2121，以及设于所述扇出区2121外侧的绑定区2122，所述多个焊盘设于所述绑定区2122，与现有的边框区结构类似，先将显示区的金属走线(图中未示出，通常包括信号线与扫描线)整理并扇出，将宽度(图中的水平方向长度)缩小，再延伸至绑定区2122并与绑定区2122中的焊盘(图中未示出)一一连接。\n\n[0037]在一些实施例中，为了进一步减小边框区212的宽度(图中的竖直方向长度)，提供了另一种显示模组，请参阅图4提供的平面结构示意图，其结构与前一实施例提供的显示模组大体相似，仅在于边框区的结构进行了优化，具体地，所述边框区212包括设于所述显示区211外侧的绑定区2122，所述显示区211中的金属走线(图中未示出)直接延伸至所述绑定区2122中，并在末端与所述多个焊盘一一电性连接。由于所述绑定导线220排布的宽度不受限制，不需再设置扇出区将金属走线扇出收缩，直接将金属走线从显示区引出后在末端连接焊盘，即可实现与所述绑定导线220的绑定，从而进一步缩短所述边框区212的宽度。\n\n[0038]在一些实施例中，所述多条绑定导线的一端通过锡膏绑定于所述多个焊盘上。由于所述绑定导线直接通过锡膏完成与焊盘的绑定，无需ACF(Anisotropic ConductiveFilm，异方性导电胶膜)胶间接导通，形成金属与金属的直接接触，对焊盘面积要求小，进而可压缩绑定区的宽度。具体的，适用于所述覆晶薄膜的焊盘的高度(竖直方向的长度)通常需100微米以上，而适用于所述绑定导线的焊盘的高度(竖直方向的长度)通常仅需10-20微米即可。\n\n[0039]在一些实施例中，所述绑定导线的材料为金，通过金属导线工艺形成所需的金线，目前所述金属导线工艺已应用于正装LED芯片与焊盘位置的电气连接，其工艺较为成熟，具备产业化的能力。\n\n[0040]在一些实施例中，所述多条绑定导线相互间隔设置。\n\n[0041]进一步地，所述多条绑定导线被绝缘胶层包覆，一方面，所述绝缘胶层完全将所述绑定导线包覆，从而避免所述绑定导线发生氧化，腐蚀以及折断等不良，另一方面，用于固定各条所述绑定导线的位置，避免相邻的绑定导线发生短接。\n\n[0042]在一些实施例中，所述显示模组还包括驱动芯片，设于所述印制电路板上。因去除了覆晶薄膜这一结构，故，将原本设于所述覆晶薄膜上的驱动芯片转移至所述印制电路板上即可。\n\n[0043]在一些实施例中，请参阅图3，藉由所述绑定导线220的弯折，所述印制电路板230固定于所述显示面板210与出光方向相对的背面。此处，由于所述绑定导线220具有较好的弯折性能，使得形成的弯折宽度也较小。\n\n[0044]在一些实施例中，所述显示面板的类型无特殊限制，可为现有已产业化的显示面板或是仍处于研究开发阶段的显示面板，示例性地，可为液晶显示面板， OLED显示面板或微型发光二极管显示面板。\n\n[0045]需要说明的是，上述显示模组实施例中仅描述了上述结构，可以理解的是，除了上述结构之外，本发明实施例所提供的显示模组中，还可以根据需要包括任何其他的必要结构，具体此处不作限定。\n\n[0046]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见上文针对其他实施例的详细描述，此处不再赘述。\n\n[0047]以上对本发明实施例所提供的一种显示模组进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种显示模组。\n\n背景技术\n\n[0002]在传统的显示屏的制作工艺中，均需通过COF(Chip On Film，覆晶薄膜) /FPC(Flexible Printed Circuit，柔性电路板)绑定的模组工艺将面板所需讯号输入到面内。出于绑定工艺的限制，面板设计上通常需要先通过扇出区将面内信号线进行收束，将其集中到一小块绑定区域，再将COF/FPC绑定在该区域，最后再PCB(Printed Circuit Board，印制电路板)和玻璃基板之间形成电性连接，从而使得边框区宽度较大，从而对显示屏的外观品位有较大影响，若用于拼接屏用途时，则会出现明显的拼缝，影响拼接显示的效果。\n\n发明内容\n\n[0003]为解决上述问题，本发明提供一种显示模组，所述显示模组包括：\n\n[0004]显示面板，包括显示区与设于所述显示区外侧的边框区，所述边框区中设有多个焊盘；\n\n[0005]印制电路板；以及\n\n[0006]多条绑定导线，一端一一绑定于所述多个焊盘上，另一端与所述印制电路板电性连接。\n\n[0007]进一步地，所述边框区包括设于所述显示区外侧的扇出区，以及设于所述扇出区外侧的绑定区，所述多个焊盘设于所述绑定区。\n\n[0008]进一步地，所述边框区包括设于所述显示区外侧的绑定区，所述显示区中的金属走线直接延伸至所述绑定区中，并在末端与所述多个焊盘一一电性连接。\n\n[0009]进一步地，所述多条绑定导线的一端通过锡膏绑定于所述多个焊盘上。\n\n[0010]进一步地，所述绑定导线的材料为金。\n\n[0011]进一步地，所述多条绑定导线相互间隔设置。\n\n[0012]进一步地，所述多条绑定导线被绝缘胶层包覆。\n\n[0013]进一步地，所述显示模组还包括驱动芯片，设于所述印制电路板上。\n\n[0014]进一步地，藉由所述绑定导线的弯折，所述印制电路板固定于所述显示面板与出光方向相对的背面。\n\n[0015]进一步地，所述显示面板选自液晶显示面板，OLED显示面板以及微型发光二极管显示面板。\n\n[0016]有益效果：本发明实施例提供了一种显示模组，包括显示面板，所述显示面板包括显示区与设于所述显示区外侧的边框区，所述边框区中设有多个焊盘；印制电路板；以及多条绑定导线，一端一一绑定于所述多个焊盘上，另一端与所述印制电路板电性连接。利用绑定导线将印制电路板与显示面板上的绑定焊盘直接相连，因绑定导线相较现常用的柔性电路板具有更好的弯折性能，且绑定导线所需的绑定焊盘的大小也较柔性电路板所需的绑定焊盘的大小更小，即可有效缩减显示模组边框的宽度，提升显示模组的外观效果，当其应用于拼接显示设备时，也能拥有更微小的拼缝。\n\n附图说明\n\n[0017]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0018]图1是现有技术提供的一种显示模组的平面结构示意图；\n\n[0019]图2是本发明实施例提供的一种显示模组的平面结构示意图；\n\n[0020]图3是本发明实施例提供的一种显示模组的截面结构示意图；\n\n[0021]图4是本发明实施例提供的另一种显示模组的平面结构示意图。\n\n具体实施方式\n\n[0022]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0023]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0024]在本申请中，“示例性”一词用来表示“用作例子、例证或说明”。本申请中被描述为“示例性”的任何实施例不一定被解释为比其它实施例更优选或更具优势。为了使本领域任何技术人员能够实现和使用本发明，给出了以下描述。在以下描述中，为了解释的目的而列出了细节。应当明白的是，本领域普通技术人员可以认识到，在不使用这些特定细节的情况下也可以实现本发明。在其它实例中，不会对公知的结构和过程进行详细阐述，以避免不必要的细节使本发明的描述变得晦涩。因此，本发明并非旨在限于所示的实施例，而是与符合本申请所公开的原理和特征的最广范围相一致。\n\n[0025]请参阅图1提供的一种现有的显示模组平面结构示意图，所述显示模组100 通常包括：\n\n[0026]显示面板110，所述显示面板通常包括显示区111，以及设于显示区外侧的边框区112，受绑定工艺的限制，所述边框区112包括扇出区1121，首先将显示区111的金属走线(图中未示出，通常包括信号线与扫描线)整理并扇出，将宽度缩小，延伸至绑定区1122并与绑定区1122中的焊盘(图中未示出)一一连接；\n\n[0027]覆晶薄膜120，与所述绑定区1122中的焊盘电性连接；\n\n[0028]印制电路板130，与所述覆晶薄膜120电性连接。\n\n[0029]在显示模组100中，受限于覆晶薄膜120的绑定工艺限制，所述边框区112 的宽度需求较宽，从而使得显示面板的非显示边框较宽，同时覆晶薄膜120的基材聚酰亚胺膜具有良好的回弹性，弯折性能较差，导致弯折后形成的宽度较宽，当作为拼接显示设备时，也会导致较宽的拼缝。\n\n[0030]基于上述，本发明实施例提供了一种显示模组，结合图2示出的平面结构示意图与图3示出的截面结构示意图，以下分别进行详细说明。\n\n[0031]所述显示模组200包括：\n\n[0032]显示面板210，包括显示区211与设于所述显示区211外侧的边框区212，所述边框区212中设有多个焊盘(图中未示出)；\n\n[0033]印制电路板230；以及\n\n[0034]多条绑定导线220(图中未示出具体导线形状)，一端一一绑定于所述多个焊盘21221上，另一端与所述印制电路板230电性连接，从而实现印制电路板230 与所述显示面板210的电性连接，以实现信号传输。\n\n[0035]在本实施例提供的显示模组中，利用绑定导线将印制电路板与显示面板上的绑定焊盘直接相连，因绑定导线相较现常用的柔性电路板具有更好的弯折性能，且绑定导线所需的绑定焊盘的大小也较柔性电路板所需的绑定焊盘的大小更小，即可有效缩减显示模组边框的宽度，提升显示模组的外观效果，当其应用于拼接显示设备时，也能拥有更微小的拼缝。\n\n[0036]在一些实施例中，请继续参阅图2，所述边框区212包括设于所述显示区211 外侧的扇出区2121，以及设于所述扇出区2121外侧的绑定区2122，所述多个焊盘设于所述绑定区2122，与现有的边框区结构类似，先将显示区的金属走线(图中未示出，通常包括信号线与扫描线)整理并扇出，将宽度(图中的水平方向长度)缩小，再延伸至绑定区2122并与绑定区2122中的焊盘(图中未示出)一一连接。\n\n[0037]在一些实施例中，为了进一步减小边框区212的宽度(图中的竖直方向长度)，提供了另一种显示模组，请参阅图4提供的平面结构示意图，其结构与前一实施例提供的显示模组大体相似，仅在于边框区的结构进行了优化，具体地，所述边框区212包括设于所述显示区211外侧的绑定区2122，所述显示区211中的金属走线(图中未示出)直接延伸至所述绑定区2122中，并在末端与所述多个焊盘一一电性连接。由于所述绑定导线220排布的宽度不受限制，不需再设置扇出区将金属走线扇出收缩，直接将金属走线从显示区引出后在末端连接焊盘，即可实现与所述绑定导线220的绑定，从而进一步缩短所述边框区212的宽度。\n\n[0038]在一些实施例中，所述多条绑定导线的一端通过锡膏绑定于所述多个焊盘上。由于所述绑定导线直接通过锡膏完成与焊盘的绑定，无需ACF(Anisotropic ConductiveFilm，异方性导电胶膜)胶间接导通，形成金属与金属的直接接触，对焊盘面积要求小，进而可压缩绑定区的宽度。具体的，适用于所述覆晶薄膜的焊盘的高度(竖直方向的长度)通常需100微米以上，而适用于所述绑定导线的焊盘的高度(竖直方向的长度)通常仅需10-20微米即可。\n\n[0039]在一些实施例中，所述绑定导线的材料为金，通过金属导线工艺形成所需的金线，目前所述金属导线工艺已应用于正装LED芯片与焊盘位置的电气连接，其工艺较为成熟，具备产业化的能力。\n\n[0040]在一些实施例中，所述多条绑定导线相互间隔设置。\n\n[0041]进一步地，所述多条绑定导线被绝缘胶层包覆，一方面，所述绝缘胶层完全将所述绑定导线包覆，从而避免所述绑定导线发生氧化，腐蚀以及折断等不良，另一方面，用于固定各条所述绑定导线的位置，避免相邻的绑定导线发生短接。\n\n[0042]在一些实施例中，所述显示模组还包括驱动芯片，设于所述印制电路板上。因去除了覆晶薄膜这一结构，故，将原本设于所述覆晶薄膜上的驱动芯片转移至所述印制电路板上即可。\n\n[0043]在一些实施例中，请参阅图3，藉由所述绑定导线220的弯折，所述印制电路板230固定于所述显示面板210与出光方向相对的背面。此处，由于所述绑定导线220具有较好的弯折性能，使得形成的弯折宽度也较小。\n\n[0044]在一些实施例中，所述显示面板的类型无特殊限制，可为现有已产业化的显示面板或是仍处于研究开发阶段的显示面板，示例性地，可为液晶显示面板， OLED显示面板或微型发光二极管显示面板。\n\n[0045]需要说明的是，上述显示模组实施例中仅描述了上述结构，可以理解的是，除了上述结构之外，本发明实施例所提供的显示模组中，还可以根据需要包括任何其他的必要结构，具体此处不作限定。\n\n[0046]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见上文针对其他实施例的详细描述，此处不再赘述。\n\n[0047]以上对本发明实施例所提供的一种显示模组进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10842, 23896, '技术领域\n\n[0001]本申请涉及显示领域，特别涉及一种Mini LED背光模组及显示装置。\n\n背景技术\n\n[0002]近些年来Mini LED作为背光源应用于LCD(Liquid crystal displays，液晶显示器)面板中能显著提升如对比度和亮度等显示画质，从而越来越受到市场关注。Mini LED背光技术是将LED(Light Emitting Diode，发光二极管)芯片绑定到具有驱动电路的背板上，通过驱动电路控制LED分区发光实现动态背光。Mini LED背光的分区数越多，LED的灯数越多，对背光控制越细腻，LCD通过搭载这种背光技术，能实现外观更薄，亮度更高，对比度超大(实现纯黑)的显示品质。\n\n[0003]目前，出于对亮度和成本的考量，每个分区一般采用多个LED串并方式发光，一旦发生LED短路，则会造成分区大面积暗灯或者部分灯电流过大烧灯现象，影响产品长期可靠性。\n\n发明内容\n\n[0004]本申请提供一种Mini LED背光模组及显示装置，以解决现有Mini LED背光模组中发生LED短路后造成分区大面积暗灯或者部分灯电流过大烧灯的技术问题。\n\n[0005]为解决上述问题，本申请提供的技术方案如下：\n\n[0006]本申请提供了一种Mini LED背光模组，包括多个背光分区，每一所述背光分区内至少设置有两LED，每一所述LED的支路上均连接有一保护电路，所述保护电路包括：\n\n[0007]整流模块，与所述LED串联，所述整流模块调节所述LED的支路电流；\n\n[0008]控制模块，分别与所述LED的输出端和所述整流模块连接，所述控制模块获取所述LED的输出端电压，并根据所述LED的输出端电压控制所述整流模块调节所述LED的支路电流保持在一设定范围内。\n\n[0009]在本申请所提供的Mini LED背光模组中，所述LED的支路包括第一高压输入端和第一低压输出端，所述整流模块包括第一TFT，所述第一TFT与所述LED串联于所述第一高压输入端与第一低压输出端之间，所述第一TFT的第一控制端与所述控制模块连接。\n\n[0010]在本申请所提供的Mini LED背光模组中，所述控制模块包括第二高压输入端、第二低压输出端、以及串联于所述第二高压输入端与所述第二低压输出端之间的第二TFT和第三TFT，所述第二TFT的第二控制端与所述第二高压输入端连接，所述第三TFT的第三控制端与所述LED的输出端连接，所述第一控制端与所述第二TFT与所述第三TFT之间的节点连接。\n\n[0011]在本申请所提供的Mini LED背光模组中，所述第一TFT的第一引脚与所述第一高压输入端连接，所述第一TFT的第二引脚与所述LED的输入端连接，所述LED的输出端与所述第一低压输出端之间串联有一保护电阻，所述第二控制端连接于所述LED的输出端与所述保护电阻之间的节点上。\n\n[0012]在本申请所提供的Mini LED背光模组中，所述LED的输入端与所述第一高压输入端连接，所述LED的输出端与所述第一TFT的第一引脚连接，所述第一TFT的第二引脚与所述第一低压输出端连接，所述第二控制端连接于所述LED的输出端与第一TFT之间的节点上。\n\n[0013]在本申请所提供的Mini LED背光模组中，所述第二TFT的第三引脚与所述第二高压输入端连接，所述第二TFT的第四引脚与所述第三TFT的第五引脚连接，所述第三TFT的第六引脚与所述第二低压输出端连接。\n\n[0014]在本申请所提供的Mini LED背光模组中，所述第一高压输入端与所述第二高压输入端之间的电压相等，且所述第一高压输入端与所述第二高压输入端并联。\n\n[0015]在本申请所提供的Mini LED背光模组中，两所述LED并联，其中一所述LED的支路上的第一低压输出端与另一所述LED的支路上的第一低压输出端连接，其中一所述LED的支路上的第一高压输入端与另一所述LED的支路上的第一高压输入端连接。\n\n[0016]在本申请所提供的Mini LED背光模组中，两所述LED串联，其中一所述LED的支路上的第一低压输出端与另一所述LED的支路上的第一高压输入端连接。\n\n[0017]本申请还提供一种显示装置，包括显示面板和如前所述的Mini LED背光模组，所述显示面板设置于所述Mini LED背光模组的一侧。\n\n[0018]本申请的有益效果：本申请通过在每一所述LED的支路上均设置保护电路，避免发生LED短路后造成背光分区大面积暗灯或者部分灯电流过大烧灯的现象，具体通过控制模块实时获取LED的输出端电压，并根据所述LED的输出端电压控制整流模块调节所述LED的支路电流保持在一设定范围内，实现对所述LED的支路电流的实时闭环控制调节，避免了一个LED短路后造成对Mini LED背光模组中其它LED的影响。\n\n附图说明\n\n[0019]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0020]图1为本申请实施例中Mini LED背光模组的第一种结构示意图；\n\n[0021]图2为本申请实施例中Mini LED背光模组的第二种结构示意图；\n\n[0022]图3为本申请实施例中保护电路的第一种电路结构示意图；\n\n[0023]图4为本申请实施例中保护电路的第二种电路结构示意图；\n\n[0024]图5为本申请实施例中保护电路的第三种电路结构示意图；\n\n[0025]图6为本申请实施例中保护电路的第四种电路结构示意图；及\n\n[0026]图7为本申请实施例中显示装置的结构示意图。\n\n具体实施方式\n\n[0027]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0028]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0029]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0030]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0031]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0032]现结合具体实施例对本申请的技术方案进行描述。\n\n[0033]本申请提供了一种Mini LED背光模组1，如图1至图2所示，包括多个背光分区10，每一所述背光分区10内至少设置有两LED11，每一所述LED11的支路上均连接有一保护电路20，所述保护电路20包括：\n\n[0034]整流模块21，与所述LED11串联，所述整流模块21调节所述LED11的支路电流；\n\n[0035]控制模块22，分别与所述LED11的输出端和所述整流模块21连接，所述控制模块获取所述LED11的输出端电压，并根据所述LED11的输出端电压控制所述整流模块21调节所述LED11的支路电流保持在一设定范围内。\n\n[0036]可以理解的是，Mini LED作为背光源应用于LCD(Liquid crystal displays，液晶显示器)面板中能显著提升如对比度和亮度等显示画质，从而越来越受到市场关注；MiniLED背光技术是将LED(Light Emitting Diode，发光二极管)芯片绑定到具有驱动电路的背板上，通过驱动电路控制LED11分区发光实现动态背光，显然，Mini LED背光的分区数越多，LED的灯数越多，对背光控制越细腻，LCD通过搭载这种背光技术，能实现外观更薄，亮度更高，对比度超大(实现纯黑)的显示品质。目前，出于对亮度和成本的考量，每个分区一般采用多个LED串并方式发光，一旦发生LED短路，则会造成分区大面积暗灯或者部分灯电流过大烧灯现象，影响产品长期可靠性；本实施例中，通过在每一所述LED11的支路上均设置保护电路2，避免发生LED11短路后造成背光分区10大面积暗灯或者部分灯电流过大烧灯的现象，具体通过控制模块22实时获取LED11的输出端电压，并根据所述LED11的输出端电压控制整流模块21调节所述LED11的支路电流保持在一设定范围内，实现对所述LED11的支路电流的实时闭环控制调节，避免了一个LED11短路后造成对Mini LED背光模组1中其它LED11的影响。\n\n[0037]承上，所述控制模块22通过实时获取所述LED11的输出端电压，并根据所述LED11的输出端电压控制整流模块21调节所述LED11的支路电流保持在一设定范围内，实现对所述LED11的支路电流的实时闭环控制调节，显然，当所述LED11的输出端电压在一正常范围内时，所述LED11的支路电流位于所述设定范围内，当所述LED11短路时，所述LED11的输出端的电压增大，会导致所述LED11的支路电流增大，此时，所述控制模块22可以控制整流模块21调节增大所述LED11的支路的电阻或导通量以将所述LED11的支路电流降低到所述设定范围内，具体的所述设定范围的电流值可根据实际需求自行设定，在此不再赘述。\n\n[0038]在一实施例中，如图3至图4所示，所述LED11的支路包括第一高压输入端111和第一低压输出端112，所述整流模块21可以是一可变电阻或一TFT(Thin Film Transistor,薄膜晶体管)；本实施例中，所述整流模块21包括第一TFT211，所述第一TFT211与所述LED11串联于所述第一高压输入端111与第一低压输出端112之间，所述第一TFT211的第一控制端2111与所述控制模块22连接，可以理解的是，所述第一TFT211的第一控制端2111即为所述第一TFT211的栅极，所述控制模块22可以通过控制驱动所述第一控制端2111的电压切换所述第一TFT211的导通状态，实现对所述LED11的支路的整流控制。\n\n[0039]在一实施例中，如图3至图4所示，所述控制模块22包括第二高压输入端221、第二低压输出端222、以及串联于所述第二高压输入端221与所述第二低压输出端222之间的第二TFT223和第三TFT224，所述第二TFT223的第二控制端2231与所述第二高压输入端221连接，所述第三TFT224的第三控制端2241与所述LED11的输出端连接，所述第一控制端2111与所述第二TFT223与所述第三TFT224之间的节点连接；显然，所述第二TFT223的第二控制端2231也即是所述第二TFT223的栅极，所述第三TFT224的第三控制端2241也即是所述第三TFT224的栅极，可以理解的是，所述第二TFT223的第二控制端2231与所述第二高压输入端221连接，也即是所述第二TFT223在常态为导通状态，所述第三TFT224的第三控制端2241与所述LED11的输出端连接，而所述LED11的输出端的常态为低电压状态，也即所述第三TFT224的常态为断开状态，显然，所述第一控制端2111与所述第二TFT223与所述第三TFT224之间的节点连接，从而使得所述第一控制端2111连接的位于所述第二TFT223与所述第三TFT224之间的节点的常态为高电位，得以保证常态下所述第一TFT211为导通状态，不影响所述LED11的正常使用。\n\n[0040]在一实施例中，如图3所示，所述第一TFT211的第一引脚2112与所述第一高压输入端111连接，所述第一TFT211的第二引脚2113与所述LED11的输入端连接，所述LED11的输出端与所述第一低压输出端112之间串联有一保护电阻12，所述第二控制端2231连接于所述LED11的输出端与所述保护电阻12之间的节点上；可以理解的是，所述第一TFT211的第一引脚2112和第二引脚2113分别为所述第一TFT211的源漏极，所述保护电阻12可以为一固定阻值电阻，避免在所述LED11短路时导致瞬时电流过大，造成对所述Mini LED背光模组1中其它LED11的影响。\n\n[0041]在一实施例中，如图4所示，所述LED11的输入端与所述第一高压输入端111连接，所述LED11的输出端与所述第一TFT211的第一引脚2112连接，所述第一TFT211的第二引脚2113与所述第一低压输出端112连接，所述第二控制端2231连接于所述LED11的输出端与第一TFT211之间的节点上；可以理解的是，与图3所示结构不同的是，所述第一TFT211连接于所述LED11的输出端，从而在所述LED11短路时，受到所述控制模块22控制迅速将所述LED11的支路电流调节所述设定范围内，不会在所述LED11短路时造成瞬时电流过大的现象，从而无需所述保护电阻12，使得线路更为精简。\n\n[0042]在一实施例中，如图3至图4所示，所述第二TFT223的第三引脚2232与所述第二高压输入端221连接，所述第二TFT223的第四引脚2233与所述第三TFT224的第五引脚2242连接，所述第三TFT224的第六引脚2243与所述第二低压输出端222连接；可以理解的是，所述第二TFT223的第三引脚2232和所述第二TFT223的第四引脚2233分别为所述第二TFT223的源漏极，所述第三TFT224的第五引脚2242和所述第三TFT224的第六引脚2243分别为所述第三TFT224的源漏极。\n\n[0043]在一实施例中，如图5至图6所示，所述第一高压输入端111与所述第二高压输入端221之间的电压相等，且所述第一高压输入端111与所述第二高压输入端221并联；显然，将所述第一高压输入端111与所述第二高压输入端221并联进一步可以降低所述Mini LED背光模组1中的走线的复杂度。\n\n[0044]在一实施例中，两所述LED11并联，其中一所述LED11的支路上的第一低压输出端112与另一所述LED11的支路上的第一低压输出端112连接，其中一所述LED11的支路上的第一高压输入端111与另一所述LED11的支路上的第一高压输入端111连接；可以理解的是，在两所述LED11并联时，当其中一所述LED11短路，通过所述控制模块22调节所述第一TFT211的导通状态，以实现所述第一TFT211断开或微开，从而避免另一所述LED11被短路而灭灯。\n\n[0045]在一实施例中，两所述LED11串联，其中一所述LED11的支路上的第一低压输出端112与另一所述LED11的支路上的第一高压输入端111连接；可以理解的是，在两所述LED11并联时，当其中一所述LED11短路，通过所述控制模块22调节所述第一TFT211的导通状态，以实现所述第一TFT211微开，从而避免产生过大电流烧坏另一所述LED11。\n\n[0046]值得注意的是，所述第一高压输入端111和所述第二高压输入端221均连接的是恒定的直流高电压，所述第一低压输出端112和所述第二低压输出端222均连接的是恒定的直流低电压；可以理解的是，所述控制模块22调节所述第一TFT211的导通状态，所述第一TFT211的导通状态可以包括完全导通、断开和微开等，显然，所述第一TFT211的导通状态由所述第二TFT223与所述第三TFT224之间节点的电压决定，具体在所述第二高压输入端221的电压与所述第二低压输出端222的电压比值一定的条件下，可根据所述第二TFT223与所述第三TFT224之间的分压比进行设定，并且，所述第一高压输入端111的电压与所述第一低压输出端112的电压可根据所述LED11的需求亮度所述要求的电压/电流值来设定。\n\n[0047]本申请还提供一种显示装置，如图7所示，包括显示面板2和如前所述的Mini LED背光模组1，所述显示面板2设置于所述Mini LED背光模组1的一侧。\n\n[0048]综上所述，本申请通过在每一所述LED11的支路上均设置保护电路20，避免发生LED11短路后造成背光分区10大面积暗灯或者部分灯电流过大烧灯的现象，具体通过控制模块22实时获取LED11的输出端电压，并根据所述LED11的输出端电压控制整流模块21调节所述LED11的支路电流保持在一设定范围内，实现对所述LED11的支路电流的实时闭环控制调节，避免了一个LED11短路后造成对Mini LED背光模组1中其它LED11的影响。\n\n[0049]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0050]以上对本申请实施例进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示领域，特别涉及一种Mini LED背光模组及显示装置。\n\n背景技术\n\n[0002]近些年来Mini LED作为背光源应用于LCD(Liquid crystal displays，液晶显示器)面板中能显著提升如对比度和亮度等显示画质，从而越来越受到市场关注。Mini LED背光技术是将LED(Light Emitting Diode，发光二极管)芯片绑定到具有驱动电路的背板上，通过驱动电路控制LED分区发光实现动态背光。Mini LED背光的分区数越多，LED的灯数越多，对背光控制越细腻，LCD通过搭载这种背光技术，能实现外观更薄，亮度更高，对比度超大(实现纯黑)的显示品质。\n\n[0003]目前，出于对亮度和成本的考量，每个分区一般采用多个LED串并方式发光，一旦发生LED短路，则会造成分区大面积暗灯或者部分灯电流过大烧灯现象，影响产品长期可靠性。\n\n发明内容\n\n[0004]本申请提供一种Mini LED背光模组及显示装置，以解决现有Mini LED背光模组中发生LED短路后造成分区大面积暗灯或者部分灯电流过大烧灯的技术问题。\n\n[0005]为解决上述问题，本申请提供的技术方案如下：\n\n[0006]本申请提供了一种Mini LED背光模组，包括多个背光分区，每一所述背光分区内至少设置有两LED，每一所述LED的支路上均连接有一保护电路，所述保护电路包括：\n\n[0007]整流模块，与所述LED串联，所述整流模块调节所述LED的支路电流；\n\n[0008]控制模块，分别与所述LED的输出端和所述整流模块连接，所述控制模块获取所述LED的输出端电压，并根据所述LED的输出端电压控制所述整流模块调节所述LED的支路电流保持在一设定范围内。\n\n[0009]在本申请所提供的Mini LED背光模组中，所述LED的支路包括第一高压输入端和第一低压输出端，所述整流模块包括第一TFT，所述第一TFT与所述LED串联于所述第一高压输入端与第一低压输出端之间，所述第一TFT的第一控制端与所述控制模块连接。\n\n[0010]在本申请所提供的Mini LED背光模组中，所述控制模块包括第二高压输入端、第二低压输出端、以及串联于所述第二高压输入端与所述第二低压输出端之间的第二TFT和第三TFT，所述第二TFT的第二控制端与所述第二高压输入端连接，所述第三TFT的第三控制端与所述LED的输出端连接，所述第一控制端与所述第二TFT与所述第三TFT之间的节点连接。\n\n[0011]在本申请所提供的Mini LED背光模组中，所述第一TFT的第一引脚与所述第一高压输入端连接，所述第一TFT的第二引脚与所述LED的输入端连接，所述LED的输出端与所述第一低压输出端之间串联有一保护电阻，所述第二控制端连接于所述LED的输出端与所述保护电阻之间的节点上。\n\n[0012]在本申请所提供的Mini LED背光模组中，所述LED的输入端与所述第一高压输入端连接，所述LED的输出端与所述第一TFT的第一引脚连接，所述第一TFT的第二引脚与所述第一低压输出端连接，所述第二控制端连接于所述LED的输出端与第一TFT之间的节点上。\n\n[0013]在本申请所提供的Mini LED背光模组中，所述第二TFT的第三引脚与所述第二高压输入端连接，所述第二TFT的第四引脚与所述第三TFT的第五引脚连接，所述第三TFT的第六引脚与所述第二低压输出端连接。\n\n[0014]在本申请所提供的Mini LED背光模组中，所述第一高压输入端与所述第二高压输入端之间的电压相等，且所述第一高压输入端与所述第二高压输入端并联。\n\n[0015]在本申请所提供的Mini LED背光模组中，两所述LED并联，其中一所述LED的支路上的第一低压输出端与另一所述LED的支路上的第一低压输出端连接，其中一所述LED的支路上的第一高压输入端与另一所述LED的支路上的第一高压输入端连接。\n\n[0016]在本申请所提供的Mini LED背光模组中，两所述LED串联，其中一所述LED的支路上的第一低压输出端与另一所述LED的支路上的第一高压输入端连接。\n\n[0017]本申请还提供一种显示装置，包括显示面板和如前所述的Mini LED背光模组，所述显示面板设置于所述Mini LED背光模组的一侧。\n\n[0018]本申请的有益效果：本申请通过在每一所述LED的支路上均设置保护电路，避免发生LED短路后造成背光分区大面积暗灯或者部分灯电流过大烧灯的现象，具体通过控制模块实时获取LED的输出端电压，并根据所述LED的输出端电压控制整流模块调节所述LED的支路电流保持在一设定范围内，实现对所述LED的支路电流的实时闭环控制调节，避免了一个LED短路后造成对Mini LED背光模组中其它LED的影响。\n\n附图说明\n\n[0019]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0020]图1为本申请实施例中Mini LED背光模组的第一种结构示意图；\n\n[0021]图2为本申请实施例中Mini LED背光模组的第二种结构示意图；\n\n[0022]图3为本申请实施例中保护电路的第一种电路结构示意图；\n\n[0023]图4为本申请实施例中保护电路的第二种电路结构示意图；\n\n[0024]图5为本申请实施例中保护电路的第三种电路结构示意图；\n\n[0025]图6为本申请实施例中保护电路的第四种电路结构示意图；及\n\n[0026]图7为本申请实施例中显示装置的结构示意图。\n\n具体实施方式\n\n[0027]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0028]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0029]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0030]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0031]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0032]现结合具体实施例对本申请的技术方案进行描述。\n\n[0033]本申请提供了一种Mini LED背光模组1，如图1至图2所示，包括多个背光分区10，每一所述背光分区10内至少设置有两LED11，每一所述LED11的支路上均连接有一保护电路20，所述保护电路20包括：\n\n[0034]整流模块21，与所述LED11串联，所述整流模块21调节所述LED11的支路电流；\n\n[0035]控制模块22，分别与所述LED11的输出端和所述整流模块21连接，所述控制模块获取所述LED11的输出端电压，并根据所述LED11的输出端电压控制所述整流模块21调节所述LED11的支路电流保持在一设定范围内。\n\n[0036]可以理解的是，Mini LED作为背光源应用于LCD(Liquid crystal displays，液晶显示器)面板中能显著提升如对比度和亮度等显示画质，从而越来越受到市场关注；MiniLED背光技术是将LED(Light Emitting Diode，发光二极管)芯片绑定到具有驱动电路的背板上，通过驱动电路控制LED11分区发光实现动态背光，显然，Mini LED背光的分区数越多，LED的灯数越多，对背光控制越细腻，LCD通过搭载这种背光技术，能实现外观更薄，亮度更高，对比度超大(实现纯黑)的显示品质。目前，出于对亮度和成本的考量，每个分区一般采用多个LED串并方式发光，一旦发生LED短路，则会造成分区大面积暗灯或者部分灯电流过大烧灯现象，影响产品长期可靠性；本实施例中，通过在每一所述LED11的支路上均设置保护电路2，避免发生LED11短路后造成背光分区10大面积暗灯或者部分灯电流过大烧灯的现象，具体通过控制模块22实时获取LED11的输出端电压，并根据所述LED11的输出端电压控制整流模块21调节所述LED11的支路电流保持在一设定范围内，实现对所述LED11的支路电流的实时闭环控制调节，避免了一个LED11短路后造成对Mini LED背光模组1中其它LED11的影响。\n\n[0037]承上，所述控制模块22通过实时获取所述LED11的输出端电压，并根据所述LED11的输出端电压控制整流模块21调节所述LED11的支路电流保持在一设定范围内，实现对所述LED11的支路电流的实时闭环控制调节，显然，当所述LED11的输出端电压在一正常范围内时，所述LED11的支路电流位于所述设定范围内，当所述LED11短路时，所述LED11的输出端的电压增大，会导致所述LED11的支路电流增大，此时，所述控制模块22可以控制整流模块21调节增大所述LED11的支路的电阻或导通量以将所述LED11的支路电流降低到所述设定范围内，具体的所述设定范围的电流值可根据实际需求自行设定，在此不再赘述。\n\n[0038]在一实施例中，如图3至图4所示，所述LED11的支路包括第一高压输入端111和第一低压输出端112，所述整流模块21可以是一可变电阻或一TFT(Thin Film Transistor,薄膜晶体管)；本实施例中，所述整流模块21包括第一TFT211，所述第一TFT211与所述LED11串联于所述第一高压输入端111与第一低压输出端112之间，所述第一TFT211的第一控制端2111与所述控制模块22连接，可以理解的是，所述第一TFT211的第一控制端2111即为所述第一TFT211的栅极，所述控制模块22可以通过控制驱动所述第一控制端2111的电压切换所述第一TFT211的导通状态，实现对所述LED11的支路的整流控制。\n\n[0039]在一实施例中，如图3至图4所示，所述控制模块22包括第二高压输入端221、第二低压输出端222、以及串联于所述第二高压输入端221与所述第二低压输出端222之间的第二TFT223和第三TFT224，所述第二TFT223的第二控制端2231与所述第二高压输入端221连接，所述第三TFT224的第三控制端2241与所述LED11的输出端连接，所述第一控制端2111与所述第二TFT223与所述第三TFT224之间的节点连接；显然，所述第二TFT223的第二控制端2231也即是所述第二TFT223的栅极，所述第三TFT224的第三控制端2241也即是所述第三TFT224的栅极，可以理解的是，所述第二TFT223的第二控制端2231与所述第二高压输入端221连接，也即是所述第二TFT223在常态为导通状态，所述第三TFT224的第三控制端2241与所述LED11的输出端连接，而所述LED11的输出端的常态为低电压状态，也即所述第三TFT224的常态为断开状态，显然，所述第一控制端2111与所述第二TFT223与所述第三TFT224之间的节点连接，从而使得所述第一控制端2111连接的位于所述第二TFT223与所述第三TFT224之间的节点的常态为高电位，得以保证常态下所述第一TFT211为导通状态，不影响所述LED11的正常使用。\n\n[0040]在一实施例中，如图3所示，所述第一TFT211的第一引脚2112与所述第一高压输入端111连接，所述第一TFT211的第二引脚2113与所述LED11的输入端连接，所述LED11的输出端与所述第一低压输出端112之间串联有一保护电阻12，所述第二控制端2231连接于所述LED11的输出端与所述保护电阻12之间的节点上；可以理解的是，所述第一TFT211的第一引脚2112和第二引脚2113分别为所述第一TFT211的源漏极，所述保护电阻12可以为一固定阻值电阻，避免在所述LED11短路时导致瞬时电流过大，造成对所述Mini LED背光模组1中其它LED11的影响。\n\n[0041]在一实施例中，如图4所示，所述LED11的输入端与所述第一高压输入端111连接，所述LED11的输出端与所述第一TFT211的第一引脚2112连接，所述第一TFT211的第二引脚2113与所述第一低压输出端112连接，所述第二控制端2231连接于所述LED11的输出端与第一TFT211之间的节点上；可以理解的是，与图3所示结构不同的是，所述第一TFT211连接于所述LED11的输出端，从而在所述LED11短路时，受到所述控制模块22控制迅速将所述LED11的支路电流调节所述设定范围内，不会在所述LED11短路时造成瞬时电流过大的现象，从而无需所述保护电阻12，使得线路更为精简。\n\n[0042]在一实施例中，如图3至图4所示，所述第二TFT223的第三引脚2232与所述第二高压输入端221连接，所述第二TFT223的第四引脚2233与所述第三TFT224的第五引脚2242连接，所述第三TFT224的第六引脚2243与所述第二低压输出端222连接；可以理解的是，所述第二TFT223的第三引脚2232和所述第二TFT223的第四引脚2233分别为所述第二TFT223的源漏极，所述第三TFT224的第五引脚2242和所述第三TFT224的第六引脚2243分别为所述第三TFT224的源漏极。\n\n[0043]在一实施例中，如图5至图6所示，所述第一高压输入端111与所述第二高压输入端221之间的电压相等，且所述第一高压输入端111与所述第二高压输入端221并联；显然，将所述第一高压输入端111与所述第二高压输入端221并联进一步可以降低所述Mini LED背光模组1中的走线的复杂度。\n\n[0044]在一实施例中，两所述LED11并联，其中一所述LED11的支路上的第一低压输出端112与另一所述LED11的支路上的第一低压输出端112连接，其中一所述LED11的支路上的第一高压输入端111与另一所述LED11的支路上的第一高压输入端111连接；可以理解的是，在两所述LED11并联时，当其中一所述LED11短路，通过所述控制模块22调节所述第一TFT211的导通状态，以实现所述第一TFT211断开或微开，从而避免另一所述LED11被短路而灭灯。\n\n[0045]在一实施例中，两所述LED11串联，其中一所述LED11的支路上的第一低压输出端112与另一所述LED11的支路上的第一高压输入端111连接；可以理解的是，在两所述LED11并联时，当其中一所述LED11短路，通过所述控制模块22调节所述第一TFT211的导通状态，以实现所述第一TFT211微开，从而避免产生过大电流烧坏另一所述LED11。\n\n[0046]值得注意的是，所述第一高压输入端111和所述第二高压输入端221均连接的是恒定的直流高电压，所述第一低压输出端112和所述第二低压输出端222均连接的是恒定的直流低电压；可以理解的是，所述控制模块22调节所述第一TFT211的导通状态，所述第一TFT211的导通状态可以包括完全导通、断开和微开等，显然，所述第一TFT211的导通状态由所述第二TFT223与所述第三TFT224之间节点的电压决定，具体在所述第二高压输入端221的电压与所述第二低压输出端222的电压比值一定的条件下，可根据所述第二TFT223与所述第三TFT224之间的分压比进行设定，并且，所述第一高压输入端111的电压与所述第一低压输出端112的电压可根据所述LED11的需求亮度所述要求的电压/电流值来设定。\n\n[0047]本申请还提供一种显示装置，如图7所示，包括显示面板2和如前所述的Mini LED背光模组1，所述显示面板2设置于所述Mini LED背光模组1的一侧。\n\n[0048]综上所述，本申请通过在每一所述LED11的支路上均设置保护电路20，避免发生LED11短路后造成背光分区10大面积暗灯或者部分灯电流过大烧灯的现象，具体通过控制模块22实时获取LED11的输出端电压，并根据所述LED11的输出端电压控制整流模块21调节所述LED11的支路电流保持在一设定范围内，实现对所述LED11的支路电流的实时闭环控制调节，避免了一个LED11短路后造成对Mini LED背光模组1中其它LED11的影响。\n\n[0049]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0050]以上对本申请实施例进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10843, 23897, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种Mini LED背光模组及其制备方法、显示面板。\n\n背景技术\n\n[0002]随着显示面板技术的发展，人们对于更轻、更薄、更大的柔性显示屏的追求日益强烈。传统的TFT-LCD是采用的玻璃衬底以及固定曲率的刚性背光，因此其不能满足柔性显示。OLED由于是自发光器件，本身没有液晶，因此实现柔性显示比较容易，但是OLED具有寿命短、可靠性差和成本高的缺点，因此其不能实现大尺寸的柔性显示。因此，柔性LCD应运而生，其继承了TFT-LCD和OLED的优点的同时，还具有抗摔、质轻和可挠等优点，但是，为了进一步降低柔性LCD的重量及厚度，需要进一步降低柔性LCD的背光模组的重量及厚度。\n\n[0003]Mini LED背光模组因具备轻薄、高色域和高对比度的优点，被视为减少柔性LCD的背光模组的重量及厚度的具体方式，但是在现有技术中，多个Mini LED一般采用直接串联或直接并联的方式。然而，多个Mini LED直接串联会导致驱动电压过高，多个Mini LED直接并联会导致驱动电流过大，同时，会使得背光模组的亮度均匀性较差，因此目前的Mini LED背光模组存在驱动电压高、驱动电流大、亮度均匀性差的问题，可靠性较差。\n\n发明内容\n\n[0004]为了解决目前的Mini LED背光模组存在的驱动电压高、驱动电流大、亮度均匀性差的问题，本申请提供一种Mini LED背光模组及其制备方法、显示面板。\n\n[0005]第一方面，本申请提供一种Mini LED背光模组，该Mini LED背光模组包括：柔性基板，设于所述柔性基板上的第一金属图案，以及若干个Mini LED；所述柔性基板上设有若干个背光分区；所述第一金属图案划分为若干个第一子金属图案，每一所述第一子金属图案对应一个所述背光分区设置；每一所述背光分区包括至少一个背光子分区，每一所述背光子分区内设有若干个呈阵列排布的所述Mini LED；在每一所述背光子分区内，同一行内的所有所述Mini LED串联形成一条串联支路，多条所述串联支路并联形成一个并联模组；若干个所述并联模组通过所述第一子金属图案实现电性连接，外部输入信号通过所述第一子金属图案输入到所述背光子分区的各个所述Mini LED中。\n\n[0006]在一些实施例中，每一所述第一子金属图案包括第一阳极走线和第一阴极走线；所述并联模组的两端分别与所述第一阳极走线和所述第一阴极走线电性连接。\n\n[0007]在一些实施例中，每一所述第一子金属图案还包括若干条连接线，每一所述串联支路中的所有所述Mini LED通过所述连接线实现串联。\n\n[0008]在一些实施例中，每一所述背光分区包括一个所述背光子分区，所述第一阳极走线和所述第一阴极走线为直线走线，且分别分布在所述背光分区的两侧。\n\n[0009]在一些实施例中，每一所述背光分区包括两个所述背光子分区，两个所述背光子分区并排设置；每一所述背光子分区内的所述并联模组的两端分别与所述第一阳极走线和所述第一阴极走线实现电性连接。\n\n[0010]在一些实施例中，两个所述背光子分区为第一背光子分区和第二背光子分区；所述第一阳极走线呈倒U字型，所述第一阴极走线呈正U字型，所述第一阳极走线环绕所述第一背光子分区内的Mini LED布置，所述第一阴极走线环绕所述第二背光子分区内的MiniLED布置；所述第一阳极走线与所述第一阴极走线交错布置，且所述第一阳极走线和所述第一阴极走线相互靠近的部分位于第一背光子分区和第二背光子分区之间；所述第一背光子分区和所述第二背光子分区内的所述并联模组的两端分别就近与所述第一阳极走线和所述第一阴极走线电性连接。\n\n[0011]在一些实施例中，所述柔性基板上还设有第二金属图案，所述第二金属图案包括若干个第二子金属图案，每一所述第二子金属图案对应一个所述背光分区设置；每一所述第二子金属图案包括第二阳极走线和第二阴极走线；所述第一子金属图案的所述第一阳极走线与对应的所述第二子金属图案的所述第二阳极走线电性连接，所述第一子金属图案的所述第一阴极走线与对应的所述第二子金属图案的所述第二阴极走线电性连接。\n\n[0012]在一些实施例中，所述第一金属图案还包括阳极总线，所述第二金属图案还包括阴极总线；每一所述第二子金属图案的所述第二阳极走线电性连接至所述阳极总线，每一所述第二子金属图案的所述第二阴极走线电性连接至所述阴极总线。\n\n[0013]在一些实施例中，所述第二金属图案与所述第一金属图案异层设置。\n\n[0014]在一些实施例中，所述第二金属图案位于所述第一金属图案的下方。\n\n[0015]第二方面，本申请还提供一种Mini LED背光模组的制备方法，该Mini LED背光模组的制备方法包括以下步骤：\n\n[0016]提供柔性基板，在所述柔性基板上划分若干个背光分区，其中，每一所述背光分区包括至少一个背光子分区。\n\n[0017]在所述柔性基板上形成第一金属图案，其中，所述第一金属图案划分为若干个第一子金属图案，每一所述第一子金属图案对应一个所述背光分区设置；以及，将若干个MiniLED对应安装至所述柔性基板上，其中，每一所述背光子分区内设有若干个呈阵列排布的所述Mini LED。\n\n[0018]其中，在每一所述背光子分区内，同一行内的所有所述Mini LED串联形成一条串联支路，多条所述串联支路并联形成一个并联模组，若干个所述并联模组通过所述第一子金属图案实现电性连接。\n\n[0019]在一些实施例中，每一所述第一子金属图案包括第一阳极走线和第一阴极走线；所述并联模组的两端分别与所述第一阳极走线和所述第一阴极走线电性连接。\n\n[0020]在一些实施例中，每一所述第一子金属图案还包括若干条连接线，每一所述串联支路中的所有所述Mini LED通过所述连接线实现串联。\n\n[0021]在一些实施例中，每一所述背光分区包括一个所述背光子分区，所述第一阳极走线和所述第一阴极走线为直线走线，且分别分布在所述背光分区的两侧。\n\n[0022]在一些实施例中，每一所述背光分区包括两个所述背光子分区，两个所述背光子分区并排设置；每一所述背光子分区内的所述并联模组的两端分别与所述第一阳极走线和所述第一阴极走线实现电性连接。\n\n[0023]在一些实施例中，两个所述背光子分区为第一背光子分区和第二背光子分区；所述第一阳极走线呈倒U字型，所述第一阴极走线呈正U字型，所述第一阳极走线环绕所述第一背光子分区内的Mini LED布置，所述第一阴极走线环绕所述第二背光子分区内的MiniLED布置；所述第一阳极走线与所述第一阴极走线交错布置，且所述第一阳极走线和所述第一阴极走线相互靠近的部分位于第一背光子分区和第二背光子分区之间；所述第一背光子分区和所述第二背光子分区内的所述并联模组的两端分别就近与所述第一阳极走线和所述第一阴极走线电性连接。\n\n[0024]在一些实施例中，在所述步骤“在所述柔性基板上形成第一金属图案”之前，所述Mini LED背光模组的制备方法还包括以下步骤：\n\n[0025]在所述柔性基板设置第二金属图案，将所述第二金属图案划分为若干个第二子金属图案，使每一所述第二子金属图案对应一个所述背光分区。\n\n[0026]其中，每一所述第二子金属图案包括第二阳极走线和第二阴极走线，所述第一子金属图案的所述第一阳极走线与对应的所述第二子金属图案的所述第二阳极走线电性连接，所述第一子金属图案的所述第一阴极走线与对应的所述第二子金属图案的所述第二阴极走线电性连接。\n\n[0027]在一些实施例中，所述第一金属图案还包括阳极总线，所述第二金属图案还包括阴极总线；每一所述第二子金属图案的所述第二阳极走线电性连接至所述阳极总线，每一所述第二子金属图案的所述第二阴极走线电性连接至所述阴极总线。\n\n[0028]第三方面，本申请还提供一种显示面板，该显示面板包括如上所述的Mini LED背光模组。\n\n[0029]本申请提供的Mini LED背光模组及其制备方法、显示面板，根据实际的背光需求在柔性基板上划分若干个背光分区，因此较之不进行背光分区而直接在柔性基板上布置Mini LED，可以改善背光模组的亮度均匀性；另外，由于在每个背光子分区中将若干个呈阵列排布的Mini LED以串联和并联组合形成并联模组的方式布置，因此较之若干个Mini LED直接串联减小了驱动电压，且较之若干个Mini LED直接并联减小了驱动电流，可以使背光模组的驱动电压和驱动电流都在合适的范围内；同时，在柔性基板上还布置了第一金属图案，将第一金属图案的每个第一子金属图案对应一个背光分区设置，将若干个并联模组通过第一子金属图案实现电性连接，由此使得外部输入信号通过第一金属图案的每个第一子金属图案独立输入到每个背光分区的每个背光子分区的各个Mini LED中，这样可以减小背光模组的金属走线电阻，从而减小IR压降效应，进一步提高背光模组的亮度均匀性。\n\n附图说明\n\n[0030]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0031]图1为本申请实施例提供的Mini LED背光模组的结构示意图。\n\n[0032]图2为本申请实施例提供的Mini LED背光模组的背光分区的结构示意图。\n\n[0033]图3为本申请实施例提供的Mini LED背光模组的另一结构示意图。\n\n[0034]图4为本申请实施例提供的Mini LED背光模组的背光分区的另一结构示意图。\n\n[0035]图5为本申请实施例的提供的Mini LED背光模组的制备方法的流程示意图。\n\n[0036]图6(a)为本申请实施例提供的Mini LED背光模组的制备方法中的第二金属图案的布置示意图。\n\n[0037]图6(b)为本申请实施例提供的Mini LED背光模组的制备方法中的连接孔的布置示意图。\n\n[0038]图6(c)为本申请实施例提供的Mini LED背光模组的制备方法中的第一金属图案的布置示意图。\n\n[0039]图7为本申请实施例提供的显示面板的结构示意图。\n\n具体实施方式\n\n[0040]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0041]图1为本申请实施例提供的Mini LED背光模组的结构示意图，图2为本申请实施例提供的Mini LED背光模组的背光分区的结构示意图。参见图1和图2，本申请提供的MiniLED背光模组包括柔性基板FP，设于柔性基板上的第一金属图案(图中除去Mini LED的实线部分)，以及若干个Mini LED。柔性基板上设有若干个背光分区9。第一金属图案划分为若干个第一子金属图案(图中每个背光分区9中的实线部分)，每一第一子金属图案对应一个背光分区9设置；每一背光分区9包括至少一个背光子分区(图1和图2中以每一背光分区9仅包括一个背光子分区为例)，每一背光子分区内设有若干个呈阵列排布的Mini LED(图中的一个小矩形为一个Mini LED)。在每一背光子分区内，同一行内的所有Mini LED串联形成一条串联支路，多条串联支路并联形成一个并联模组；若干个并联模组通过第一子金属图案实现电性连接，外部输入信号通过第一子金属图案输入到背光子分区中的各个Mini LED中。\n\n[0042]具体地，在柔性基板上设有若干个背光分区9，每个背光分区9包括至少一个背光子分区。在每个背光子分区中，若干个Mini LED以m行×n列的方式呈阵列排布，每行n个Mini LED串联形成一条串联支路，且m条串联支路并联形成一个并联模组，其中，m、n为正整数(图1和图2中以m＝6，n＝8为例)。\n\n[0043]另外，在柔性基板上还布置有第一金属图案，第一金属图案的每个第一子金属图案的分布位置与一个背光分区9的分布位置相对应，每个背光子分区中的若干个Mini LED构成的并联模组通过每个背光子分区所属的背光分区9对应的第一子金属图案实现电性连接，外部输入信号通过每个背光子分区所属的背光分区9对应的第一子金属图案输入到每个背光子分区中的各个Mini LED中。\n\n[0044]本申请提供的Mini LED背光模组，由于根据实际的背光需求在柔性基板上划分若干个背光分区，因此较之不进行背光分区而直接在柔性基板上布置Mini LED，可以改善背光模组的亮度均匀性；另外，由于在每个背光子分区中将若干个呈阵列排布的Mini LED以串联和并联组合形成并联模组的方式布置，因此较之若干个Mini LED直接串联减小了驱动电压，且较之若干个Mini LED直接并联减小了驱动电流，可以使背光模组的驱动电压和驱动电流都在合适的范围内；同时，在柔性基板上还布置了第一金属图案，将第一金属图案的每个第一子金属图案对应一个背光分区设置，将若干个并联模组通过第一子金属图案实现电性连接，由此使得外部输入信号通过第一金属图案的每个第一子金属图案独立输入到每个背光分区的每个背光子分区的各个Mini LED中，这样可以减小背光模组的金属走线电阻，从而减小IR压降效应，进一步提高背光模组的亮度均匀性。\n\n[0045]基于上述实施例，参见图1和图2，每一第一子金属图案包括第一阳极走线1和第一阴极走线2；并联模组的两端分别与第一阳极走线1和第一阴极走线2电性连接。以每一背光分区9仅包括一个背光子分区为例，第一阳极走线1和第一阴极走线2为直线走线，且分别分布在一个背光分区的两侧。\n\n[0046]需要说明的是，第一阳极走线1和第一阴极走线2，以及以下各实施例中的第二阳极走线3和第二阳极走线4，分别为图中的实线或虚线在柔性基板上所占的平面区域，图中的实线和虚线均表示走线的线宽。\n\n[0047]具体地，根据第一金属图案的布置，每一第一子金属图案的第一阳极走线1互相之间是直接或间接电性连接的，每一第一子金属图案的第一阴极走线2互相之间也是直接或间接电性连接的。外部输入信号的正极信号电性连接至第一阳极走线1，外部输入信号的负极信号电性连接至第一阴极走线2，由此，外部输入信号通过第一阳极走线1和第一阴极走线2输入到每个背光子分区中。\n\n[0048]进一步地，若干个Mini LED以串联和并联组合的方式构成的并联模组的两端分别与第一阳极走线1和第一阴极走线2电性连接，即，每行n个Mini LED中的第1个Mini LED与第一阳极走线1电性连接、第n个Mini LED与第一阴极走线2电性连接，由此使输入到每个背光子分区中的外部输入信号进一步输入到每个背光子分区中的各个Mini LED中。\n\n[0049]本申请通过上述的具体连接方式，将外部输入信号通过第一阳极走线1和第二阳极走线2输入到每个背光子分区中的各Mini LED中，从而控制各Mini LED。\n\n[0050]需要说明的是，参见图1和图2，每一第一子金属图案还包括若干条连接线5，每一串联支路中的所有Mini LED分别通过连接线5实现串联。\n\n[0051]可以理解的是，该背光模组的若干个Mini LED，并不局限于图1和图2中的排布方式，还可以根据实际需求所要求的驱动电压和驱动电流进行合理排布，从而进一步优化每个背光分区9的电路设计，以进一步提高显示效果。\n\n[0052]基于上述实施例，以每一背光分区9包括两个背光子分区为例，两个背光子分区并排设置；每一背光子分区内的并联模组的两端分别与第一阳极走线1和第一阴极走线2实现电性连接。\n\n[0053]具体地，将两个背光子分区并排设置组成一个背光分区9，且每个背光子分区中的若干个Mini LED以串联和并联组合的方式构成的并联模组的两端仍然分别与第一阳极走线1和第一阴极走线2实现电性连接，从而使外部输入信号通过第一阳极走线1和第一阴极走线2分别独立输入到每个背光分区9的两个背光子分区中的各Mini LED中。\n\n[0054]基于上述实施例，图3为本申请实施例提供的Mini LED背光模组的另一结构示意图，图4为本申请实施例提供的Mini LED背光模组的背光分区的另一结构示意图。参见图3和图4，两个并排布置的背光子分区为第一背光子分区(由图3和图4中第一阳极走线1和其环绕的左半部分的若干个Mini LED组成)和第二背光子分区(由图3和图4中第一阴极走线2和其环绕的右半部分的若干个Mini LED组成)；其中，第一阳极走线1呈倒U字型，第一阴极走线2呈正U字型，第一阳极走线1环绕第一背光子分区内的Mini LED布置，第一阴极走线2环绕第二背光子分区内的Mini LED布置；第一阳极走线1与第一阴极走线2交错布置，即，倒U字型的第一阳极走线1和正U字型的第一阴极走线2相互靠近的支脚分别位于对方的U字型槽内部；并且，第一阳极走线1和第一阴极走线2相互靠近的部分位于第一背光子分区和第二背光子分区之间；第一背光子分区和第二背光子分区内的并联模组的两端分别就近与第一阳极走线1和第一阴极走线2电性连接。\n\n[0055]具体地，分别在第一背光子分区中和第二背光子分区中，每行n个Mini LED中的第1个Mini LED均与第一阳极走线1电性连接，第n个Mini LED均与第一阴极走线2电性连接；并且，同一行内的n个Mini LED串联后形成一条串联支路，将m条串联支路并联形成一个并联模组，由此，在每个背光子分区中布置m行×n列Mini LED(图3和图4中以m＝7，n＝8为例)。\n\n[0056]本申请通过以上Mini LED背光模组的另一结构，将背光分区分为并排且交错布置的两个背光子分区，由此将每个背光子分区中的若干个Mini LED随着两个背光子分区的分布位置分布，从而进一步改善背光模组的亮度均匀性。\n\n[0057]基于上述实施例，参见图3和图4，柔性基板上还设有第二金属图案(图中的虚线部分)，第二金属图案包括若干个第二子金属图案(图中每个背光分区9中的虚线部分)，每一第二子金属图案对应一个背光分区设置；每一第二子金属图案包括第二阳极走线3和第二阴极走线4；第一子金属图案的第一阳极走线1与对应的第二子金属图案的第二阳极走线3电性连接，第一子金属图案的第一阴极走线2与对应的第二子金属图案的第二阴极走线4电性连接。\n\n[0058]具体地，外部输入信号的正极信号从第二阳极走线3经第一阳极走线1传输到每个背光分区9的每个背光子分区中的各Mini LED中，外部输入信号的负极信号从第二阴极走线4经第一阴极走线2传输到每个背光分区9的每个背光子分区中的各Mini LED中，由此将外部输入信号传输到各Mini LED中。\n\n[0059]本申请在第一金属图案的基础上还设置有第二金属图案，将外部输入信号经第二金属图案传输到第一金属图案，再从第一金属图案分别输入到每个背光分区9的每个背光子分区中的各Mini LED中，第一金属图案和第二金属图案分别独立进行信号传输，可以减小背光模组的金属走线电阻，从而减小IR压降效应，进一步提高背光模组的亮度均匀性。\n\n[0060]进一步地，参见图3，第一金属图案还包括阳极总线6，第二金属图案还包括阴极总线7；每一第二子金属图案的第二阳极走线3电性连接至阳极总线6，每一第二子金属图案的第二阴极走线4电性连接至阴极总线7。这样，外部输入信号的正极信号通过阳极总线6传输到第二阳极走线3上，外部输入信号的负极信号通过阴极总线7传输到第二阴极走线4上。\n\n[0061]结合上述实施例，外部输入信号的正极信号通过阳极总线6传输到第二阳极走线3上，再从第二阳极走线3经第一阳极走线1传输到每个背光分区9的每个背光子分区中的各Mini LED中；外部输入信号的负极信号通过阴极总线7传输到第二阴极走线4上，再从第二阴极走线4经第一阴极走线2传输到每个背光分区9的每个背光子分区中的各Mini LED中，由此将外部输入信号传输到各Mini LED中。\n\n[0062]基于上述实施例，第二金属图案与第一金属图案异层设置，即，第一金属图案的第一阳极走线1、第一阴极走线2和阳极总线6设于第一层，第二金属图案的第二阳极走线3、第二阴极走线4和阴极总线7设于第二层，第一层与第二层为不同的两层。\n\n[0063]本申请通过设置第一金属图案和第二金属图案这两层金属图案，将外部输入信号从第二金属图案的第二阳极走线3和第二阴极走线4经第一金属图案的第一阳极走线1和第一阴极走线2传输到每个背光分区9的每个背光子分区中的各Mini LED中，从而将外部输入信号分别独立输入到每个背光分区9的每个背光子分区中，且两层金属图案异层设置，互不干扰，以便布线。\n\n[0064]进一步地，由于Mini LED和第一金属图案直接电性连接，因此可以将第二金属图案设于第一金属图案的下方，即，第二层位于第一层的下方，从而将Mini LED安装在背光模组中的上层位置，以方便Mini LED的安装。\n\n[0065]需要说明的是，参见图1、图2、图3和图4，第一阳极走线1与第二阳极走线3、第一阴极走线2与第二阴极走线4、以及第二阳极走线3与阳极总线6，均分别通过多个连接孔8电性连接。另外，由于第二阴极走线4和阴极总线7均设于第二层，因此第二阴极走线4和阴极总线7直接电性连接，不需要通过连接孔电性连接。\n\n[0066]可以理解的是，本申请实施例提供的Mini LED背光模组为直下式背光模组，可以将若干个背光分区9呈阵列式排布在柔性基板上，使每个背光分区9的每个背光子分区中的各Mini LED的晶粒均匀地布置在显示面板的后方作为发光源，从而使背光均匀地传达到整个屏幕，实现更加细腻逼真的显示效果。\n\n[0067]图5为本申请实施例的提供的Mini LED背光模组的制备方法的流程示意图。参见图1、图2和图5，本申请实施例还提供一种Mini LED背光模组的制备方法，该Mini LED背光模组的制备方法包括以下步骤：\n\n[0068]S1、提供柔性基板FP，在柔性基板上划分若干个背光分区9，其中，每一背光分区9包括至少一个背光子分区。\n\n[0069]具体地，根据实际的背光需求，在柔性基板上划分若干个背光分区9，且每个背光分区9包括至少一个背光子分区。每个背光子分区用于限定若干个Mini LED在柔性基板上安装的范围。\n\n[0070]S2、在柔性基板上形成第一金属图案，其中，第一金属图案划分为若干个第一子金属图案，每一第一子金属图案对应一个背光分区9设置；以及，将若干个Mini LED对应安装至柔性基板上，每一背光子分区内设有若干个呈阵列排布的Mini LED。其中，在每一背光子分区内，同一行内的所有Mini LED串联形成一条串联支路，多条串联支路并联形成一个并联模组，若干个并联模组通过第一子金属图案实现电性连接。\n\n[0071]具体地，在每个背光子分区中，每行n个Mini LED串联形成一条串联支路，且m条串联支路并联形成一个并联模组，其中，m、n为正整数(图1和图2中以m＝6，n＝8为例)，从而在每个背光子分区中布置m行×n列Mini LED。在柔性基上还布置有第一金属图案，第一金属图案中的每个第一子金属图案的分布位置与一个背光分区9的分布位置相对应，每个背光子分区中的若干个Mini LED构成的并联模组通过每个背光子分区所属的背光分区9对应的第一子金属图案实现电性连接，外部输入信号通过每个背光子分区所属的背光分区9对应的第一子金属图案输入到每个背光子分区中的各个Mini LED中。\n\n[0072]本申请提供的Mini LED背光模组的制备方法，由于根据实际的背光需求在柔性基板上划分若干个背光分区，因此较之不进行背光分区而直接在柔性基板上布置Mini LED，可以改善背光模组的亮度均匀性；另外，由于在每个背光子分区中将若干个呈阵列排布的Mini LED以串联和并联组合形成并联模组的方式布置，因此较之若干个Mini LED直接串联减小了驱动电压，且较之若干个Mini LED直接并联减小了驱动电流，可以使背光模组的驱动电压和驱动电流都在合适的范围内；同时，在柔性基板上还布置了第一金属图案，将第一金属图案的每个第一子金属图案对应一个背光分区设置，将若干个并联模组通过第一子金属图案实现电性连接，由此使得外部输入信号通过第一金属图案的每个第一子金属图案独立输入到每个背光分区的每个背光子分区的各个Mini LED中，这样可以减小背光模组的金属走线电阻，从而减小IR压降效应，进一步提高背光模组的亮度均匀性。\n\n[0073]针对图1和图2中的Mini LED背光模组的制备方法，其与上述关于图1和图2中的Mini LED背光模组的结构和有益效果相对应，由于上述实施例已经对图1和图2中的MiniLED背光模组的结构和有益效果进行了详细阐述，此处不再赘述。\n\n[0074]参见图3、图4和图5，在步骤“在柔性基板上形成第一金属图案”之前，该Mini LED背光模组的制备方法还包括以下步骤：\n\n[0075]在柔性基板设置第二金属图案，将第二金属图案划分为若干个第二子金属图案，使每一第二子金属图案对应一个背光分区。其中，每一第二子金属图案包括第二阳极走线和第二阴极走线，第一子金属图案的第一阳极走线与对应的第二子金属图案的第二阳极走线电性连接，第一子金属图案的第一阴极走线与对应的第二子金属图案的第二阴极走线电性连接。\n\n[0076]本申请在第一金属图案的基础上还设置有第二金属图案，将外部输入信号经第二金属图案传输到第一金属图案，再从第一金属图案分别输入到每个背光分区9的每个背光子分区中的各Mini LED中，第一金属图案和第二金属图案分别独立进行信号传输，可以减小背光模组的金属走线电阻，从而减小IR压降效应，进一步提高背光模组的亮度均匀性。\n\n[0077]针对图3和图4中的Mini LED背光模组的另一结构的制备方法，其与上述关于图3和图4中的Mini LED背光模组的另一结构和有益效果相对应，由于上述实施例已经对图3和图4中的Mini LED背光模组的另一结构和有益效果进行了详细阐述，此处不再赘述。\n\n[0078]基于上述实施例，参见图3和图4，该Mini LED背光模组的制备方法具体包括以下步骤：\n\n[0079]图6(a)为本申请实施例提供的Mini LED背光模组的制备方法中的第二金属图案的布置示意图，即，图6(a)反映了背光分区9的背光子分区、第二子金属图案的第二阳极走线3和第二阴极走线4的分布位置。参见图6(a)，在柔性基板上设置若干个背光分区9，并在背光分区9的的每个背光子分区的对应位置布置第二阳极走线3和第二阴极走线4；在柔性基板的相应位置布置阴极总线7，第二阴极走线4与阴极总线7直接电性连接。\n\n[0080]图6(b)为本申请实施例提供的Mini LED背光模组的制备方法中的连接孔的布置示意图。参见图6(b)，在第二阳极走线3和第二阴极走线4上设置多个连接孔，即，在第二阳极走线3与第一阳极走线1的连接处、以及第二阴极走线4与第一阴极走线2的连接处布置多个连接孔8；并且，将第二阳极走线3与第一阳极走线1通过连接孔8电性连接，将第二阴极走线4与第一阴极走线2通过连接孔8电性连接。\n\n[0081]图6(c)为本申请实施例提供的Mini LED背光模组的制备方法中的第一金属图案的布置示意图，即图6(c)反映了第一阳极走线1和第一阴极走线2的分布位置。参见图6(c)，在背光分区9的每个背光子分区的对应位置布置第一阳极走线1和第一阴极走线2，第一阳极走线1为倒U字型，第二阴极走线2为正U字型，第一阳极走线1和第一阴极走线2，即，第一阳极走线1和第一阴极走线3相互靠近的支脚分别位于对方的U字型槽内部；在柔性基板的相应位置布置阳极总线6，将第二阳极走线3与阳极总线6通过连接孔8电性连接。\n\n[0082]参见图3，分别在第一背光子分区中和第二背光子分区中，将每个背光子分区中的每行n个Mini LED中的第1个Mini LED均与第一阳极走线1电性连接，第n个Mini LED均与第一阴极走线2电性连接；并且，将同一行内的n个Mini LED串联后形成一条串联支路，将m条串联支路并联形成一个并联模组，由此，在每个背光子分区中布置m行×n列Mini LED。\n\n[0083]需要说明的是，上述针对图3和图4中的Mini LED背光模组的制备方法的具体流程对应于图3和图4中的Mini LED背光模组的一种具体布置方案，该具体流程的步骤可以根据实际情况调换前后顺序，以方便具体制程工艺的实施，此处对于具体流程的步骤顺序并不限定。\n\n[0084]图7为本申请实施例提供的显示面板的结构示意图，参见图7，本申请实施例还提供一种显示面板11，该显示面板11包括如上所述的Mini LED背光模组10。该显示面板11与该Mini LED背光模组10具有相同的结构和有益效果，上述实施例已对该Mini LED背光模组10的结构和有益效果进行了阐述，此处不再赘述。\n\n[0085]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0086]本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种Mini LED背光模组及其制备方法、显示面板。\n\n背景技术\n\n[0002]随着显示面板技术的发展，人们对于更轻、更薄、更大的柔性显示屏的追求日益强烈。传统的TFT-LCD是采用的玻璃衬底以及固定曲率的刚性背光，因此其不能满足柔性显示。OLED由于是自发光器件，本身没有液晶，因此实现柔性显示比较容易，但是OLED具有寿命短、可靠性差和成本高的缺点，因此其不能实现大尺寸的柔性显示。因此，柔性LCD应运而生，其继承了TFT-LCD和OLED的优点的同时，还具有抗摔、质轻和可挠等优点，但是，为了进一步降低柔性LCD的重量及厚度，需要进一步降低柔性LCD的背光模组的重量及厚度。\n\n[0003]Mini LED背光模组因具备轻薄、高色域和高对比度的优点，被视为减少柔性LCD的背光模组的重量及厚度的具体方式，但是在现有技术中，多个Mini LED一般采用直接串联或直接并联的方式。然而，多个Mini LED直接串联会导致驱动电压过高，多个Mini LED直接并联会导致驱动电流过大，同时，会使得背光模组的亮度均匀性较差，因此目前的Mini LED背光模组存在驱动电压高、驱动电流大、亮度均匀性差的问题，可靠性较差。\n\n发明内容\n\n[0004]为了解决目前的Mini LED背光模组存在的驱动电压高、驱动电流大、亮度均匀性差的问题，本申请提供一种Mini LED背光模组及其制备方法、显示面板。\n\n[0005]第一方面，本申请提供一种Mini LED背光模组，该Mini LED背光模组包括：柔性基板，设于所述柔性基板上的第一金属图案，以及若干个Mini LED；所述柔性基板上设有若干个背光分区；所述第一金属图案划分为若干个第一子金属图案，每一所述第一子金属图案对应一个所述背光分区设置；每一所述背光分区包括至少一个背光子分区，每一所述背光子分区内设有若干个呈阵列排布的所述Mini LED；在每一所述背光子分区内，同一行内的所有所述Mini LED串联形成一条串联支路，多条所述串联支路并联形成一个并联模组；若干个所述并联模组通过所述第一子金属图案实现电性连接，外部输入信号通过所述第一子金属图案输入到所述背光子分区的各个所述Mini LED中。\n\n[0006]在一些实施例中，每一所述第一子金属图案包括第一阳极走线和第一阴极走线；所述并联模组的两端分别与所述第一阳极走线和所述第一阴极走线电性连接。\n\n[0007]在一些实施例中，每一所述第一子金属图案还包括若干条连接线，每一所述串联支路中的所有所述Mini LED通过所述连接线实现串联。\n\n[0008]在一些实施例中，每一所述背光分区包括一个所述背光子分区，所述第一阳极走线和所述第一阴极走线为直线走线，且分别分布在所述背光分区的两侧。\n\n[0009]在一些实施例中，每一所述背光分区包括两个所述背光子分区，两个所述背光子分区并排设置；每一所述背光子分区内的所述并联模组的两端分别与所述第一阳极走线和所述第一阴极走线实现电性连接。\n\n[0010]在一些实施例中，两个所述背光子分区为第一背光子分区和第二背光子分区；所述第一阳极走线呈倒U字型，所述第一阴极走线呈正U字型，所述第一阳极走线环绕所述第一背光子分区内的Mini LED布置，所述第一阴极走线环绕所述第二背光子分区内的MiniLED布置；所述第一阳极走线与所述第一阴极走线交错布置，且所述第一阳极走线和所述第一阴极走线相互靠近的部分位于第一背光子分区和第二背光子分区之间；所述第一背光子分区和所述第二背光子分区内的所述并联模组的两端分别就近与所述第一阳极走线和所述第一阴极走线电性连接。\n\n[0011]在一些实施例中，所述柔性基板上还设有第二金属图案，所述第二金属图案包括若干个第二子金属图案，每一所述第二子金属图案对应一个所述背光分区设置；每一所述第二子金属图案包括第二阳极走线和第二阴极走线；所述第一子金属图案的所述第一阳极走线与对应的所述第二子金属图案的所述第二阳极走线电性连接，所述第一子金属图案的所述第一阴极走线与对应的所述第二子金属图案的所述第二阴极走线电性连接。\n\n[0012]在一些实施例中，所述第一金属图案还包括阳极总线，所述第二金属图案还包括阴极总线；每一所述第二子金属图案的所述第二阳极走线电性连接至所述阳极总线，每一所述第二子金属图案的所述第二阴极走线电性连接至所述阴极总线。\n\n[0013]在一些实施例中，所述第二金属图案与所述第一金属图案异层设置。\n\n[0014]在一些实施例中，所述第二金属图案位于所述第一金属图案的下方。\n\n[0015]第二方面，本申请还提供一种Mini LED背光模组的制备方法，该Mini LED背光模组的制备方法包括以下步骤：\n\n[0016]提供柔性基板，在所述柔性基板上划分若干个背光分区，其中，每一所述背光分区包括至少一个背光子分区。\n\n[0017]在所述柔性基板上形成第一金属图案，其中，所述第一金属图案划分为若干个第一子金属图案，每一所述第一子金属图案对应一个所述背光分区设置；以及，将若干个MiniLED对应安装至所述柔性基板上，其中，每一所述背光子分区内设有若干个呈阵列排布的所述Mini LED。\n\n[0018]其中，在每一所述背光子分区内，同一行内的所有所述Mini LED串联形成一条串联支路，多条所述串联支路并联形成一个并联模组，若干个所述并联模组通过所述第一子金属图案实现电性连接。\n\n[0019]在一些实施例中，每一所述第一子金属图案包括第一阳极走线和第一阴极走线；所述并联模组的两端分别与所述第一阳极走线和所述第一阴极走线电性连接。\n\n[0020]在一些实施例中，每一所述第一子金属图案还包括若干条连接线，每一所述串联支路中的所有所述Mini LED通过所述连接线实现串联。\n\n[0021]在一些实施例中，每一所述背光分区包括一个所述背光子分区，所述第一阳极走线和所述第一阴极走线为直线走线，且分别分布在所述背光分区的两侧。\n\n[0022]在一些实施例中，每一所述背光分区包括两个所述背光子分区，两个所述背光子分区并排设置；每一所述背光子分区内的所述并联模组的两端分别与所述第一阳极走线和所述第一阴极走线实现电性连接。\n\n[0023]在一些实施例中，两个所述背光子分区为第一背光子分区和第二背光子分区；所述第一阳极走线呈倒U字型，所述第一阴极走线呈正U字型，所述第一阳极走线环绕所述第一背光子分区内的Mini LED布置，所述第一阴极走线环绕所述第二背光子分区内的MiniLED布置；所述第一阳极走线与所述第一阴极走线交错布置，且所述第一阳极走线和所述第一阴极走线相互靠近的部分位于第一背光子分区和第二背光子分区之间；所述第一背光子分区和所述第二背光子分区内的所述并联模组的两端分别就近与所述第一阳极走线和所述第一阴极走线电性连接。\n\n[0024]在一些实施例中，在所述步骤“在所述柔性基板上形成第一金属图案”之前，所述Mini LED背光模组的制备方法还包括以下步骤：\n\n[0025]在所述柔性基板设置第二金属图案，将所述第二金属图案划分为若干个第二子金属图案，使每一所述第二子金属图案对应一个所述背光分区。\n\n[0026]其中，每一所述第二子金属图案包括第二阳极走线和第二阴极走线，所述第一子金属图案的所述第一阳极走线与对应的所述第二子金属图案的所述第二阳极走线电性连接，所述第一子金属图案的所述第一阴极走线与对应的所述第二子金属图案的所述第二阴极走线电性连接。\n\n[0027]在一些实施例中，所述第一金属图案还包括阳极总线，所述第二金属图案还包括阴极总线；每一所述第二子金属图案的所述第二阳极走线电性连接至所述阳极总线，每一所述第二子金属图案的所述第二阴极走线电性连接至所述阴极总线。\n\n[0028]第三方面，本申请还提供一种显示面板，该显示面板包括如上所述的Mini LED背光模组。\n\n[0029]本申请提供的Mini LED背光模组及其制备方法、显示面板，根据实际的背光需求在柔性基板上划分若干个背光分区，因此较之不进行背光分区而直接在柔性基板上布置Mini LED，可以改善背光模组的亮度均匀性；另外，由于在每个背光子分区中将若干个呈阵列排布的Mini LED以串联和并联组合形成并联模组的方式布置，因此较之若干个Mini LED直接串联减小了驱动电压，且较之若干个Mini LED直接并联减小了驱动电流，可以使背光模组的驱动电压和驱动电流都在合适的范围内；同时，在柔性基板上还布置了第一金属图案，将第一金属图案的每个第一子金属图案对应一个背光分区设置，将若干个并联模组通过第一子金属图案实现电性连接，由此使得外部输入信号通过第一金属图案的每个第一子金属图案独立输入到每个背光分区的每个背光子分区的各个Mini LED中，这样可以减小背光模组的金属走线电阻，从而减小IR压降效应，进一步提高背光模组的亮度均匀性。\n\n附图说明\n\n[0030]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0031]图1为本申请实施例提供的Mini LED背光模组的结构示意图。\n\n[0032]图2为本申请实施例提供的Mini LED背光模组的背光分区的结构示意图。\n\n[0033]图3为本申请实施例提供的Mini LED背光模组的另一结构示意图。\n\n[0034]图4为本申请实施例提供的Mini LED背光模组的背光分区的另一结构示意图。\n\n[0035]图5为本申请实施例的提供的Mini LED背光模组的制备方法的流程示意图。\n\n[0036]图6(a)为本申请实施例提供的Mini LED背光模组的制备方法中的第二金属图案的布置示意图。\n\n[0037]图6(b)为本申请实施例提供的Mini LED背光模组的制备方法中的连接孔的布置示意图。\n\n[0038]图6(c)为本申请实施例提供的Mini LED背光模组的制备方法中的第一金属图案的布置示意图。\n\n[0039]图7为本申请实施例提供的显示面板的结构示意图。\n\n具体实施方式\n\n[0040]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0041]图1为本申请实施例提供的Mini LED背光模组的结构示意图，图2为本申请实施例提供的Mini LED背光模组的背光分区的结构示意图。参见图1和图2，本申请提供的MiniLED背光模组包括柔性基板FP，设于柔性基板上的第一金属图案(图中除去Mini LED的实线部分)，以及若干个Mini LED。柔性基板上设有若干个背光分区9。第一金属图案划分为若干个第一子金属图案(图中每个背光分区9中的实线部分)，每一第一子金属图案对应一个背光分区9设置；每一背光分区9包括至少一个背光子分区(图1和图2中以每一背光分区9仅包括一个背光子分区为例)，每一背光子分区内设有若干个呈阵列排布的Mini LED(图中的一个小矩形为一个Mini LED)。在每一背光子分区内，同一行内的所有Mini LED串联形成一条串联支路，多条串联支路并联形成一个并联模组；若干个并联模组通过第一子金属图案实现电性连接，外部输入信号通过第一子金属图案输入到背光子分区中的各个Mini LED中。\n\n[0042]具体地，在柔性基板上设有若干个背光分区9，每个背光分区9包括至少一个背光子分区。在每个背光子分区中，若干个Mini LED以m行×n列的方式呈阵列排布，每行n个Mini LED串联形成一条串联支路，且m条串联支路并联形成一个并联模组，其中，m、n为正整数(图1和图2中以m＝6，n＝8为例)。\n\n[0043]另外，在柔性基板上还布置有第一金属图案，第一金属图案的每个第一子金属图案的分布位置与一个背光分区9的分布位置相对应，每个背光子分区中的若干个Mini LED构成的并联模组通过每个背光子分区所属的背光分区9对应的第一子金属图案实现电性连接，外部输入信号通过每个背光子分区所属的背光分区9对应的第一子金属图案输入到每个背光子分区中的各个Mini LED中。\n\n[0044]本申请提供的Mini LED背光模组，由于根据实际的背光需求在柔性基板上划分若干个背光分区，因此较之不进行背光分区而直接在柔性基板上布置Mini LED，可以改善背光模组的亮度均匀性；另外，由于在每个背光子分区中将若干个呈阵列排布的Mini LED以串联和并联组合形成并联模组的方式布置，因此较之若干个Mini LED直接串联减小了驱动电压，且较之若干个Mini LED直接并联减小了驱动电流，可以使背光模组的驱动电压和驱动电流都在合适的范围内；同时，在柔性基板上还布置了第一金属图案，将第一金属图案的每个第一子金属图案对应一个背光分区设置，将若干个并联模组通过第一子金属图案实现电性连接，由此使得外部输入信号通过第一金属图案的每个第一子金属图案独立输入到每个背光分区的每个背光子分区的各个Mini LED中，这样可以减小背光模组的金属走线电阻，从而减小IR压降效应，进一步提高背光模组的亮度均匀性。\n\n[0045]基于上述实施例，参见图1和图2，每一第一子金属图案包括第一阳极走线1和第一阴极走线2；并联模组的两端分别与第一阳极走线1和第一阴极走线2电性连接。以每一背光分区9仅包括一个背光子分区为例，第一阳极走线1和第一阴极走线2为直线走线，且分别分布在一个背光分区的两侧。\n\n[0046]需要说明的是，第一阳极走线1和第一阴极走线2，以及以下各实施例中的第二阳极走线3和第二阳极走线4，分别为图中的实线或虚线在柔性基板上所占的平面区域，图中的实线和虚线均表示走线的线宽。\n\n[0047]具体地，根据第一金属图案的布置，每一第一子金属图案的第一阳极走线1互相之间是直接或间接电性连接的，每一第一子金属图案的第一阴极走线2互相之间也是直接或间接电性连接的。外部输入信号的正极信号电性连接至第一阳极走线1，外部输入信号的负极信号电性连接至第一阴极走线2，由此，外部输入信号通过第一阳极走线1和第一阴极走线2输入到每个背光子分区中。\n\n[0048]进一步地，若干个Mini LED以串联和并联组合的方式构成的并联模组的两端分别与第一阳极走线1和第一阴极走线2电性连接，即，每行n个Mini LED中的第1个Mini LED与第一阳极走线1电性连接、第n个Mini LED与第一阴极走线2电性连接，由此使输入到每个背光子分区中的外部输入信号进一步输入到每个背光子分区中的各个Mini LED中。\n\n[0049]本申请通过上述的具体连接方式，将外部输入信号通过第一阳极走线1和第二阳极走线2输入到每个背光子分区中的各Mini LED中，从而控制各Mini LED。\n\n[0050]需要说明的是，参见图1和图2，每一第一子金属图案还包括若干条连接线5，每一串联支路中的所有Mini LED分别通过连接线5实现串联。\n\n[0051]可以理解的是，该背光模组的若干个Mini LED，并不局限于图1和图2中的排布方式，还可以根据实际需求所要求的驱动电压和驱动电流进行合理排布，从而进一步优化每个背光分区9的电路设计，以进一步提高显示效果。\n\n[0052]基于上述实施例，以每一背光分区9包括两个背光子分区为例，两个背光子分区并排设置；每一背光子分区内的并联模组的两端分别与第一阳极走线1和第一阴极走线2实现电性连接。\n\n[0053]具体地，将两个背光子分区并排设置组成一个背光分区9，且每个背光子分区中的若干个Mini LED以串联和并联组合的方式构成的并联模组的两端仍然分别与第一阳极走线1和第一阴极走线2实现电性连接，从而使外部输入信号通过第一阳极走线1和第一阴极走线2分别独立输入到每个背光分区9的两个背光子分区中的各Mini LED中。\n\n[0054]基于上述实施例，图3为本申请实施例提供的Mini LED背光模组的另一结构示意图，图4为本申请实施例提供的Mini LED背光模组的背光分区的另一结构示意图。参见图3和图4，两个并排布置的背光子分区为第一背光子分区(由图3和图4中第一阳极走线1和其环绕的左半部分的若干个Mini LED组成)和第二背光子分区(由图3和图4中第一阴极走线2和其环绕的右半部分的若干个Mini LED组成)；其中，第一阳极走线1呈倒U字型，第一阴极走线2呈正U字型，第一阳极走线1环绕第一背光子分区内的Mini LED布置，第一阴极走线2环绕第二背光子分区内的Mini LED布置；第一阳极走线1与第一阴极走线2交错布置，即，倒U字型的第一阳极走线1和正U字型的第一阴极走线2相互靠近的支脚分别位于对方的U字型槽内部；并且，第一阳极走线1和第一阴极走线2相互靠近的部分位于第一背光子分区和第二背光子分区之间；第一背光子分区和第二背光子分区内的并联模组的两端分别就近与第一阳极走线1和第一阴极走线2电性连接。\n\n[0055]具体地，分别在第一背光子分区中和第二背光子分区中，每行n个Mini LED中的第1个Mini LED均与第一阳极走线1电性连接，第n个Mini LED均与第一阴极走线2电性连接；并且，同一行内的n个Mini LED串联后形成一条串联支路，将m条串联支路并联形成一个并联模组，由此，在每个背光子分区中布置m行×n列Mini LED(图3和图4中以m＝7，n＝8为例)。\n\n[0056]本申请通过以上Mini LED背光模组的另一结构，将背光分区分为并排且交错布置的两个背光子分区，由此将每个背光子分区中的若干个Mini LED随着两个背光子分区的分布位置分布，从而进一步改善背光模组的亮度均匀性。\n\n[0057]基于上述实施例，参见图3和图4，柔性基板上还设有第二金属图案(图中的虚线部分)，第二金属图案包括若干个第二子金属图案(图中每个背光分区9中的虚线部分)，每一第二子金属图案对应一个背光分区设置；每一第二子金属图案包括第二阳极走线3和第二阴极走线4；第一子金属图案的第一阳极走线1与对应的第二子金属图案的第二阳极走线3电性连接，第一子金属图案的第一阴极走线2与对应的第二子金属图案的第二阴极走线4电性连接。\n\n[0058]具体地，外部输入信号的正极信号从第二阳极走线3经第一阳极走线1传输到每个背光分区9的每个背光子分区中的各Mini LED中，外部输入信号的负极信号从第二阴极走线4经第一阴极走线2传输到每个背光分区9的每个背光子分区中的各Mini LED中，由此将外部输入信号传输到各Mini LED中。\n\n[0059]本申请在第一金属图案的基础上还设置有第二金属图案，将外部输入信号经第二金属图案传输到第一金属图案，再从第一金属图案分别输入到每个背光分区9的每个背光子分区中的各Mini LED中，第一金属图案和第二金属图案分别独立进行信号传输，可以减小背光模组的金属走线电阻，从而减小IR压降效应，进一步提高背光模组的亮度均匀性。\n\n[0060]进一步地，参见图3，第一金属图案还包括阳极总线6，第二金属图案还包括阴极总线7；每一第二子金属图案的第二阳极走线3电性连接至阳极总线6，每一第二子金属图案的第二阴极走线4电性连接至阴极总线7。这样，外部输入信号的正极信号通过阳极总线6传输到第二阳极走线3上，外部输入信号的负极信号通过阴极总线7传输到第二阴极走线4上。\n\n[0061]结合上述实施例，外部输入信号的正极信号通过阳极总线6传输到第二阳极走线3上，再从第二阳极走线3经第一阳极走线1传输到每个背光分区9的每个背光子分区中的各Mini LED中；外部输入信号的负极信号通过阴极总线7传输到第二阴极走线4上，再从第二阴极走线4经第一阴极走线2传输到每个背光分区9的每个背光子分区中的各Mini LED中，由此将外部输入信号传输到各Mini LED中。\n\n[0062]基于上述实施例，第二金属图案与第一金属图案异层设置，即，第一金属图案的第一阳极走线1、第一阴极走线2和阳极总线6设于第一层，第二金属图案的第二阳极走线3、第二阴极走线4和阴极总线7设于第二层，第一层与第二层为不同的两层。\n\n[0063]本申请通过设置第一金属图案和第二金属图案这两层金属图案，将外部输入信号从第二金属图案的第二阳极走线3和第二阴极走线4经第一金属图案的第一阳极走线1和第一阴极走线2传输到每个背光分区9的每个背光子分区中的各Mini LED中，从而将外部输入信号分别独立输入到每个背光分区9的每个背光子分区中，且两层金属图案异层设置，互不干扰，以便布线。\n\n[0064]进一步地，由于Mini LED和第一金属图案直接电性连接，因此可以将第二金属图案设于第一金属图案的下方，即，第二层位于第一层的下方，从而将Mini LED安装在背光模组中的上层位置，以方便Mini LED的安装。\n\n[0065]需要说明的是，参见图1、图2、图3和图4，第一阳极走线1与第二阳极走线3、第一阴极走线2与第二阴极走线4、以及第二阳极走线3与阳极总线6，均分别通过多个连接孔8电性连接。另外，由于第二阴极走线4和阴极总线7均设于第二层，因此第二阴极走线4和阴极总线7直接电性连接，不需要通过连接孔电性连接。\n\n[0066]可以理解的是，本申请实施例提供的Mini LED背光模组为直下式背光模组，可以将若干个背光分区9呈阵列式排布在柔性基板上，使每个背光分区9的每个背光子分区中的各Mini LED的晶粒均匀地布置在显示面板的后方作为发光源，从而使背光均匀地传达到整个屏幕，实现更加细腻逼真的显示效果。\n\n[0067]图5为本申请实施例的提供的Mini LED背光模组的制备方法的流程示意图。参见图1、图2和图5，本申请实施例还提供一种Mini LED背光模组的制备方法，该Mini LED背光模组的制备方法包括以下步骤：\n\n[0068]S1、提供柔性基板FP，在柔性基板上划分若干个背光分区9，其中，每一背光分区9包括至少一个背光子分区。\n\n[0069]具体地，根据实际的背光需求，在柔性基板上划分若干个背光分区9，且每个背光分区9包括至少一个背光子分区。每个背光子分区用于限定若干个Mini LED在柔性基板上安装的范围。\n\n[0070]S2、在柔性基板上形成第一金属图案，其中，第一金属图案划分为若干个第一子金属图案，每一第一子金属图案对应一个背光分区9设置；以及，将若干个Mini LED对应安装至柔性基板上，每一背光子分区内设有若干个呈阵列排布的Mini LED。其中，在每一背光子分区内，同一行内的所有Mini LED串联形成一条串联支路，多条串联支路并联形成一个并联模组，若干个并联模组通过第一子金属图案实现电性连接。\n\n[0071]具体地，在每个背光子分区中，每行n个Mini LED串联形成一条串联支路，且m条串联支路并联形成一个并联模组，其中，m、n为正整数(图1和图2中以m＝6，n＝8为例)，从而在每个背光子分区中布置m行×n列Mini LED。在柔性基上还布置有第一金属图案，第一金属图案中的每个第一子金属图案的分布位置与一个背光分区9的分布位置相对应，每个背光子分区中的若干个Mini LED构成的并联模组通过每个背光子分区所属的背光分区9对应的第一子金属图案实现电性连接，外部输入信号通过每个背光子分区所属的背光分区9对应的第一子金属图案输入到每个背光子分区中的各个Mini LED中。\n\n[0072]本申请提供的Mini LED背光模组的制备方法，由于根据实际的背光需求在柔性基板上划分若干个背光分区，因此较之不进行背光分区而直接在柔性基板上布置Mini LED，可以改善背光模组的亮度均匀性；另外，由于在每个背光子分区中将若干个呈阵列排布的Mini LED以串联和并联组合形成并联模组的方式布置，因此较之若干个Mini LED直接串联减小了驱动电压，且较之若干个Mini LED直接并联减小了驱动电流，可以使背光模组的驱动电压和驱动电流都在合适的范围内；同时，在柔性基板上还布置了第一金属图案，将第一金属图案的每个第一子金属图案对应一个背光分区设置，将若干个并联模组通过第一子金属图案实现电性连接，由此使得外部输入信号通过第一金属图案的每个第一子金属图案独立输入到每个背光分区的每个背光子分区的各个Mini LED中，这样可以减小背光模组的金属走线电阻，从而减小IR压降效应，进一步提高背光模组的亮度均匀性。\n\n[0073]针对图1和图2中的Mini LED背光模组的制备方法，其与上述关于图1和图2中的Mini LED背光模组的结构和有益效果相对应，由于上述实施例已经对图1和图2中的MiniLED背光模组的结构和有益效果进行了详细阐述，此处不再赘述。\n\n[0074]参见图3、图4和图5，在步骤“在柔性基板上形成第一金属图案”之前，该Mini LED背光模组的制备方法还包括以下步骤：\n\n[0075]在柔性基板设置第二金属图案，将第二金属图案划分为若干个第二子金属图案，使每一第二子金属图案对应一个背光分区。其中，每一第二子金属图案包括第二阳极走线和第二阴极走线，第一子金属图案的第一阳极走线与对应的第二子金属图案的第二阳极走线电性连接，第一子金属图案的第一阴极走线与对应的第二子金属图案的第二阴极走线电性连接。\n\n[0076]本申请在第一金属图案的基础上还设置有第二金属图案，将外部输入信号经第二金属图案传输到第一金属图案，再从第一金属图案分别输入到每个背光分区9的每个背光子分区中的各Mini LED中，第一金属图案和第二金属图案分别独立进行信号传输，可以减小背光模组的金属走线电阻，从而减小IR压降效应，进一步提高背光模组的亮度均匀性。\n\n[0077]针对图3和图4中的Mini LED背光模组的另一结构的制备方法，其与上述关于图3和图4中的Mini LED背光模组的另一结构和有益效果相对应，由于上述实施例已经对图3和图4中的Mini LED背光模组的另一结构和有益效果进行了详细阐述，此处不再赘述。\n\n[0078]基于上述实施例，参见图3和图4，该Mini LED背光模组的制备方法具体包括以下步骤：\n\n[0079]图6(a)为本申请实施例提供的Mini LED背光模组的制备方法中的第二金属图案的布置示意图，即，图6(a)反映了背光分区9的背光子分区、第二子金属图案的第二阳极走线3和第二阴极走线4的分布位置。参见图6(a)，在柔性基板上设置若干个背光分区9，并在背光分区9的的每个背光子分区的对应位置布置第二阳极走线3和第二阴极走线4；在柔性基板的相应位置布置阴极总线7，第二阴极走线4与阴极总线7直接电性连接。\n\n[0080]图6(b)为本申请实施例提供的Mini LED背光模组的制备方法中的连接孔的布置示意图。参见图6(b)，在第二阳极走线3和第二阴极走线4上设置多个连接孔，即，在第二阳极走线3与第一阳极走线1的连接处、以及第二阴极走线4与第一阴极走线2的连接处布置多个连接孔8；并且，将第二阳极走线3与第一阳极走线1通过连接孔8电性连接，将第二阴极走线4与第一阴极走线2通过连接孔8电性连接。\n\n[0081]图6(c)为本申请实施例提供的Mini LED背光模组的制备方法中的第一金属图案的布置示意图，即图6(c)反映了第一阳极走线1和第一阴极走线2的分布位置。参见图6(c)，在背光分区9的每个背光子分区的对应位置布置第一阳极走线1和第一阴极走线2，第一阳极走线1为倒U字型，第二阴极走线2为正U字型，第一阳极走线1和第一阴极走线2，即，第一阳极走线1和第一阴极走线3相互靠近的支脚分别位于对方的U字型槽内部；在柔性基板的相应位置布置阳极总线6，将第二阳极走线3与阳极总线6通过连接孔8电性连接。\n\n[0082]参见图3，分别在第一背光子分区中和第二背光子分区中，将每个背光子分区中的每行n个Mini LED中的第1个Mini LED均与第一阳极走线1电性连接，第n个Mini LED均与第一阴极走线2电性连接；并且，将同一行内的n个Mini LED串联后形成一条串联支路，将m条串联支路并联形成一个并联模组，由此，在每个背光子分区中布置m行×n列Mini LED。\n\n[0083]需要说明的是，上述针对图3和图4中的Mini LED背光模组的制备方法的具体流程对应于图3和图4中的Mini LED背光模组的一种具体布置方案，该具体流程的步骤可以根据实际情况调换前后顺序，以方便具体制程工艺的实施，此处对于具体流程的步骤顺序并不限定。\n\n[0084]图7为本申请实施例提供的显示面板的结构示意图，参见图7，本申请实施例还提供一种显示面板11，该显示面板11包括如上所述的Mini LED背光模组10。该显示面板11与该Mini LED背光模组10具有相同的结构和有益效果，上述实施例已对该Mini LED背光模组10的结构和有益效果进行了阐述，此处不再赘述。\n\n[0085]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0086]本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10844, 23898, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种转移装置及转移方法。\n\n背景技术\n\n[0002]在微发光二极管显示器制作工艺中，将Micro LED由中间承载板转移到TFT基板上进行Micro LED与TFT基板间的bonding是非常关键的一步。另外，对于TFT基板上Bonding后出现点亮异常的Micro LED，需要定点的把异常Micro LED去除。\n\n[0003]因此，需要高效的Micro LED转移工具可靠、精确、快速、廉价的完成转移。然而，目前存在的Micro LED转移头由于各自的缺陷，没办法比较可靠、定点、快速、廉价的对MicroLED进行转移。\n\n[0004]例如，在传统的静电转移头中，静电转移头与被吸取目标间的距离严重影响其吸附力的大小。图1为现有静电转移头的结构示意图，如图1所示，在利用图1中的静电转移头200吸取Micro LED200时，静电转移头200对所述MicroLED200的静电力与两者之间距离的平方成反比。\n\n[0005]因此，亟需提供一种可靠度和精度较高，且成本低廉的转移装置及转移方法，以解决上述问题。\n\n发明内容\n\n[0006]为了解决上述技术问题，本发明提供一种转移装置及转移方法，本发明所述转移装置的转移头通过电场单元、磁场发生器件和磁性粒子的配合，使MicroLED均能够被磁性粒子充分的接触，进而能克服传统的静电转移头中存在的吸头与被吸取目标间的距离严重影响吸附力的大小的问题。\n\n[0007]为了实现上述目的，本发明所述转移装置及转移方法采取了以下技术方案。\n\n[0008]本发明提供一种转移装置，包括一基板和设置于所述基板上的至少一转移头，所述转移头包括：一吸附器件和一磁场发生器件，其中：所述吸附器件设置于所述基板的一表面上并且在背离所述基板的表面上包括一吸附区，所述吸附器件至少用于：将预设距离范围内的Micro LED吸附于所述吸附区，或者，释放所述Micro LED；所述磁场发生器件设置于所述吸附器件和所述基板之间并被配置为通过产生磁场以至少用于：将预设距离范围内的磁性粒子吸附于所述吸附区上以形成一具有预设结构的接触层，使得所述接触层与吸附于所述吸附区的所述Micro LED接触，或者，从所述接触层释放所述磁性粒子。\n\n[0009]进一步，所述磁场发生器件包括至少一电磁线路层，所述电磁线路层包括一第一介电层和包覆于所述第一介电层的至少一电磁线圈；所述电磁线圈被配置为接收独立的电磁信号并根据所述电磁信号产生磁场；一第一介电层，所述第一介电层设置于包覆或半包覆所述电磁线圈。\n\n[0010]进一步，相邻两个转移的磁场发生器件内的各所述电磁线路层分别同层并分别通过所述第一介电层连续，以构成一磁场发生器件层。\n\n[0011]进一步，所述第一介电层为SiNx、SiOx或SiONx中的至少一种。\n\n[0012]进一步，所述转移装置包括阵列排布于所述基板上的复数个所述转移头；所述转移装置还包括复数个阻隔坝，所述阻隔坝设置于相邻的所述转移头之间并至少用于定义所述转移头的吸附区。\n\n[0013]在一优选实施例中，相邻两个转移的磁场发生器件内的各所述电磁线路层分别同层并分别通过所述第一介电层连续，以构成一磁场发生器件层；所述阻隔坝设置于所述磁场发生器件层背离所述基板的表面上并位于相邻的所述吸附器件之间，所述阻隔坝至少用于将相邻所述吸附单元的吸附区隔开。\n\n[0014]进一步，所述吸附器件包括至少一静电线路层，所述静电线路层包括：至少一静电电极，设置于所述磁场发生器件的背离所述基板的一侧；以及，第二介电层，设置在所述静电电极的背离所述基板的一侧并覆盖所述静电电极；其中，每一所述静电电极被配置为接收独立的静电信号并根据所述电信号产生作用于所述Micro LED的静电力。\n\n[0015]进一步，所述静电线路层包括同层且间隔设置的两个所述静电电极，并且所述静电电极分别配置不同极性的静电信号。\n\n[0016]进一步，所述第二介电层的材料为SiNx、SiOx或SiONx中的至少一种。\n\n[0017]进一步，所述磁性粒子为纳米磁性粒子，所述纳米磁性粒包括磁性内核和绝缘外壳，其中：所述磁性内核的材料为Fe2O3、Fe3O4、Co或Ni中的至少一种；所述绝缘外壳的材料为SiNx、SiOx或SiONx中的至少一种。\n\n[0018]进一步，所述磁性粒子尺寸范围为5nm-10um。\n\n[0019]进一步，所述接触层的厚度范围为100nm-50um。\n\n[0020]本发明提供一种基于任一项所述转移装置的转移方法，其特征在于，所述转移方法包括以下步骤：S1、开启磁场发生器件，并使所述转移头贴近装载有磁性粒子的第一承载基板，使所述转移头吸附磁性粒子，以吸附区上以形成一具有预设结构的接触层；S2、使所述转移头贴近装载有Micro LED的第二承载基板，并开启电场单元，以将所述Micro LED吸附于所述接触层；S3、使吸附有所述Micro LED的转移头对准一第三基板上的预设安位置，并调整所述电场单元，所述Micro LED被释放于预设安位置；以及，S4、调整所述磁场发生器件，以使所述磁性粒子复位并进入下一次转移操作。\n\n[0021]本发明所述转移装置及转移方法具有以下有益效果：\n\n[0022]本发明所述转移装置通过增设磁场发生器件，能在转移头的吸附区上吸附磁性粒子形成接触层，从而能使得的Micro LED均能够被磁性粒子充分的接触，进而能克服传统的静电转移头中存在的转移头与被吸取目标间的距离严重影响吸附力的大小的问题；通过增设电场单元、磁场发生器件和磁性粒子的配合，能使吸附电场和磁性粒子协同对Micro LED进行吸附，从而能将Micro LED从承载基板高效定点吸起；通过控制提供给磁场发生器件的电磁信号，能调整磁性粒子的数量及形状复位，进而能调整接触层的厚度后地形形状，最终能保证Micro LED与磁性粒子充分的接触。\n\n附图说明\n\n[0023]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0024]图1现有静电转移头的结构示意图。\n\n[0025]图2为本发明所述转移装置的第一实施例的示意图。\n\n[0026]图3为本发明所述转移装置的第二实施例的示意图。\n\n[0027]图4A-4D为本发明所述转移装置一实施例的工作过程示意图。\n\n具体实施方式\n\n[0028]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0029]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0030]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0031]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0032]下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0033]图2为本发明所述转移装置第一实施例的示意图，图3为本发明所述转移装置的第二实施例的示意图。如图2和图3所示，本发明提供一种转移装置，所述转移装置包括：一基板100、设置于所述基板100上的至少一转移头200以及位于相邻所述转移头200之间的阻隔坝300。\n\n[0034]如图2所示，所述转移头200包括：磁场发生器件210和吸附器件220。其中：所述吸附器件220设置于所述基板100的一表面上并且在背离所述基板100的表面包括一吸附区222，所述吸附器件220用于：将预设距离范围内的Micro LED400的吸附于所述吸附区222，或者，释放所述Micro LED400；所述磁场发生器件210设置于所述吸附器件220和所述基板100之间并被配置为通过产生磁场以至少用于：将预设距离范围内的磁性粒子501吸附于所述吸附区222上以形成一具有预设结构的接触层500，使得所述接触层500与吸附于所述吸附区222的所述Micro LED400接触，或者，从所述接触层500释放所述磁性粒子501。\n\n[0035]具体地，所述磁场发生器件210通过所述磁场还能使所述磁性粒子501对所述Micro LED400进行吸附。\n\n[0036]很显然，在本发明所述转移头200中，通过增设磁场发生器件210能在所述吸附区222上吸附磁性粒子501以形成接触层500，从而能使得接触层500与不同地势的MicroLED400均能充分的接触，进而能克服传统的静电转移头中存在的转移头与被吸取目标间的距离严重影响静电吸附力的大小的问题，最终能实现将Micro LED400从其承载基板高效定点吸起的目的。\n\n[0037]如图2所示，所述基板100用于承载所述吸附器件220或/和所述磁场发生器件210。例如，在本实施例中，所述磁场发生器件210和所述吸附器件220依次层叠于所述基板100的一表面上。\n\n[0038]在具体实施时，所述基板100可由诸如硅、陶瓷及聚合物这样的各种材料形成。\n\n[0039]如图2所示，所述磁场发生器件210设置于所述基板100上，并且所述磁场发生器件210被配置为对预设距离范围内的磁性粒子501产生吸附力，以控制所述磁性粒子501覆盖于所述吸附区222上。\n\n[0040]如图2所示，所述磁场发生器件210包括至少一电磁线路层211，所述电磁线路层211包括一第一介电层2111和设置于所述第一介电层2111内的至少一电磁线圈2112，每一所述电磁线圈2112被配置为接收独立的电磁信号并根据所述电磁信号产生作用于所述磁性粒子501的磁场。\n\n[0041]通过将每一所述电磁线圈2112分别配置独立的电磁信号，能实现对每一电磁线圈2112以及所述磁场发生器件210的单独控制，从而能用于执行单个MicroLED400的转移或多个Micro LED400的转移。\n\n[0042]在一优选实施例中，相邻所述磁场发生器件210内的各所述电磁线路层211分别同层并分别通过第一介电层2111相连续，以构成一磁场发生器件层。例如，本领域技术人员可以理解，将多个转移头200的各第一介电层2111整层制作，而所述电磁线圈2112分布于各层所述第一介电层2111的与所述转移头200的对应的区域内，从而能形成上述磁场发生器件层。\n\n[0043]例如，如图2所示，在本实施例中，多个转移头200的磁场发生器件210均包括依次层叠于所述基板100上的三层电磁线路层211，并且所述转移头200的对应层的所述电磁线路层211分别同层并相互连续。\n\n[0044]需要指出的时，图2仅本发明所述磁场发生器件210的示意性结构。本发明并未对磁场发生器件210中的电磁线路的211的堆叠层数或堆叠结构、第一介电层2111的厚度、材料或结构，或者，所述电磁线圈2112的材料、结构或布局进行限定，只要所述磁场发生器件210的中电磁线路的211、第一介电层2111或电磁线圈2112的具体配置方式适当，能用于所述磁性粒子501的吸附或释放以及形成接触层500。例如，在一所述转移装置中，不同的所述转移头200中的电磁线路的211层数、第一介电层2111的厚度或电磁线圈2112的排布方式均可以不同。\n\n[0045]具体地，所述第一介电层2111为SiNx、SiOx或SiONx中的至少一种。例如，在本实施例中，所述第一介电层2111选用SiONx。\n\n[0046]具体地，所述电磁线圈2112采用铜或者铝等金属线圈。在具体实施时，所述电磁线圈2112采用螺旋结构线圈。\n\n[0047]需要说明的是，图2仅示意性地给所述电磁线圈2112的布局结构、材料或形状。在具体实施时，所述电磁线圈2112的布局结构、材料或形状也可根据实际情况灵活设定。\n\n[0048]具体地，所述电磁信号为电流信号。通过向所述电磁线圈2112接入电流信号，所述电磁线圈2112产生作用于磁性粒子501的磁场。\n\n[0049]在具体实施时，控制提供给所述电磁线圈2112的电流信号，能调整该电磁线圈2112产生磁场的强度或方向，进而能调整所述磁性粒子501的附着数量、堆叠形状或复位。也就是，通过控制所述电磁线圈2112通入的电流信号，能控制由所述磁性粒子501附着形成的接触层500的结构。\n\n[0050]如图2所示，处于所述预设距离范围内的磁性粒子501能在所述磁场发生器件210产生的磁场的作用下，被吸附于所述吸附区222上，以形成具有预设结构的接触层500。具体来讲，当所述磁性粒子501朝向所述转移头200的吸附区222设置并处于所述磁场发生器件210的产生的磁场的作用范围内时，所述磁性粒子501能在所述磁场的吸附作用下保持于所述吸附区222上，进而形成覆盖所述吸附区222的接触层500。\n\n[0051]通过采用由所述磁性粒子501堆叠形成的接触层500，能通过磁场调整接触层500的形状和厚度，从而能保障所述Micro LED400与吸附头100充分接触，还能保障所述吸附器件220对所述Micro LED400强的吸附作用。\n\n[0052]如图2所示，所述接触层500覆盖于所述吸附区222的背离所述基板100的一侧上，以用于与吸附于所述吸附区222的所述Micro LED400接触。并且，所述接触层500由在所述磁场发生器件210的作用下吸附并保持于在所述吸附区222上的所述磁性粒子501构成。\n\n[0053]如前所述，在具体实施时，能通过控制所述磁场发生器件210接入的电磁信号，以控制所述磁性粒子501在所述吸附区222的堆叠数量或堆叠形状，进而控制所述接触层500的地势结构或厚度变化。\n\n[0054]具体地，所述接触层500的厚度范围为100nm-50um。将接触层500厚度控制在上述范围内，以确保所述转移头200对所述Micro LED400的紧密贴合效果和较强的吸附力。\n\n[0055]具体地，所述磁性粒子501为纳米磁性粒子，所述纳米磁性粒包括磁性内核和绝缘外壳。其中，所述磁性内核的材料为Fe2O3,Fe3O4,Co,或Ni中的至少一种。所述绝缘外壳的材料为SiOx。在其他实施例中，形成所述磁性内核的材料还可以为镍氧化物或者钴氧化物。所述绝缘外壳的材料氮化硅或者氧化硅和氮化硅的复合物。\n\n[0056]具体地，所述磁性粒子501尺寸范围为5nm-10um。通过将所述磁性粒子501的尺寸控制在一定范围内，能更精准地控制所述接触层500的地势结构或厚度变化，进而实现转移头200和各个不平坦的Micro LED400的充分接触。\n\n[0057]如图2所示，所述吸附器件220设置在所述磁场发生器件210的背离所述基板100的表面上，并且所述吸附器件220的背离所述基板100的表面上具有一吸附区222，所述吸附器件220被配置为用于将预设距离范围内的Micro LED400吸附于所述吸附区222或释放所述Micro LED400。需要指明的是，本发明并未对此处的预设距离范围进行具体限定，只要使得所述转移头200能将Micro LED400吸附于其吸附区222即可。\n\n[0058]如图2所示，所述吸附器件220包括：至少一静电电路层221，所述静电电路层221包括一个或多个静电电极2212和第二介电层2211。其中第二介电层2211设置在所述静电电极2212的背离所述基板100的一侧并覆盖所述静电电极2212，其中所述静电电极2212被配置为接收独立的静电信号并根据所述静电信号产生作用于所述Micro LED400的静电力。\n\n[0059]通过将每一所述静电电极2212分别配置独立的静电信号，能实现对每一静电电极2212以及每一所述吸附器件220的单独控制，从而能用于执行单个MicroLED400转移或多个Micro LED400转移。\n\n[0060]具体地，所述静电电路层221包括同层且间隔设置的两个所述静电电极2212，并且两个所述静电电极2212分别配置不同极性的静电信号。例如，如图2所示，在本实施例中，不同的转移头200的静电电路层221分别被配置为包括一个或两个静电电极2212。\n\n[0061]具体地，所述静电电极2212的材料为铜或铝。在其他实施例中，所述静电电极2212的材料还可以为镍或银。\n\n[0062]具体地，所述静电电极2212可以为单层结构，还可以为叠层结构，本申请实施例对此不作任何限定。需要说明的是，图2是以所述静电电极为单层结构为例进行说明的。\n\n[0063]具体地，所述第二介电层2111为SiNx、SiOx或SiONx中的至少一种。例如，在本实施例中，所述第二介电层2111选用SiONx。\n\n[0064]至此，利用一转移头200进行Micro LED400转移过程中：在将Micro LED400吸附所述吸附区222之前，该转移头200通过控制其内磁场发生器件210的电磁信号能吸附并控制磁性粒子501在所述吸附区222形成具有预设结构的接触层500，从而能保证后续被吸附的Micro LED400能与该接触层500充分接触。基于上述过程，所述转移头200能通过其吸附器件220或/和所述接触层500中的磁性粒子501的吸附作用对Micro LED400产生强的吸附作用，进而可以将Micro LED400从承载基板高效定点吸起。\n\n[0065]如图2所示，在所述基板100上还设置有多个阻隔坝300，所述阻隔坝300位于相邻的所述转移头200的之间，并至少用以定义所述转移头200的吸附区222。\n\n[0066]例如，如图2所示，在本实施例中，相邻两个转移头200的磁场发生器件210内的各所述电磁线路层211分别同层并分别通过所述第一介电层2111连续，以构成一磁场发生器件层，所述阻隔坝300设置于所述磁场发生器件层的背离所述基板100的一侧并位于相邻的所述吸附器件220之间，用以将相邻所述吸附器件220的吸附区222隔开。\n\n[0067]需要说明的是，为了能够同时拾取多个发光二极管，上述转移装置包括多个转移头200，本发明实施例中的各附图中，为了更清楚的示意转移装置的结构，仅以转移装置中的其中一个或两个转移头200为例进行示意，在具体实施时，可以根据实际需要设置转移头200的数量和分布，此处不做限定。\n\n[0068]图3为本发明所述转移装置的第二实施例的示意图。与图2所示的转移装置相比，图3所示转移装置的主要区别点在于，在所述转移头200的吸附器件220中，每一所述静电电路层221仅包括一静电电极2212。\n\n[0069]图4A-4D为本发明所述转移装置的工作过程示意图。如图4A-4D所示，本发明还提供一种基于本发明所述转移装置的转移方法，所述转移方法包括以下步骤：\n\n[0070]S0、提供一本发明所述转移装置；\n\n[0071]S1、开启磁场发生器件，并使所述转移头贴近装载有磁性粒子的第一承载基板，使所述转移头吸附磁性粒子，以吸附区上以形成一具有预设结构的接触层；\n\n[0072]S2、使所述转移头贴近装载有Micro LED的第二承载基板，并开启电场单元，以将所述Micro LED吸附于所述接触层；\n\n[0073]S3、使吸附有所述Micro LED的转移头对准一第三基板上的预设安位置，并调整所述电场单元，所述Micro LED被释放于预设安位置；以及，\n\n[0074]S4、调整所述磁场发生器件，以使所述磁性粒子复位并进入下一次转移操作。\n\n[0075]在步骤SO中，首先提供本发明所述转移装置。例如，如图4A-图4D所示，在本实施例中，采用上述图3所示的转移装置。在其他实施例中，可以采用图2所示的转移装置。\n\n[0076]需要注意的是，图2和图3仅为本发明所述转移装置的示意性结构图。在实现本发明所述转移方法时，并不仅限于图2和图3所示的转移装置。\n\n[0077]如图4A所示，在步骤S1中，控制开启所述转移装置中的转移头200的磁场发生器件210，并使所述转移头200的吸附区220的朝向承载基板110的承载有磁性粒子501的一侧贴近到预设距离内，从而将所述磁性粒子501吸附于所述吸附区220，以形成具有预设厚度或预设结构的接触层500。\n\n[0078]需要理解，此处并未限定于开启所述转移装置内所有转移头200内的所有电磁线路层211同时接入电磁信号。在具体实施时，可以根据需要进行转移的MicroLED400的水平和/或竖直方向上的具体地形和地势选择性开启，从而控制所述接触层500的厚度或地形。或者称，依据待转移Micro LED400的实际位置或地形，选择性地开启或控制与该待转移Micro LED400对应的转移头200内的部分或全部所有电磁线路层211。\n\n[0079]如图4B所示，在步骤S2中，将步骤S1得到的形成有接触层500的所述转移装置朝向第二承载基板120的承载有Micro LED400的一面贴近到预设距离范围内，并控制开启相对应的吸附器件210。在此过程中，所述转移头200利用其吸附器件210对所述Micro LED400的吸附作用，将所述Micro LED400吸附于所述接触层500，使得所述Micro LED400与所述接触层500接触并保持于所述接触层500。\n\n[0080]相似地，此处并未限定于将所述转移装置内所有转移头200内的所有吸附器件或所有静电线路层221内均接入电磁信号。在具体实施时，可以根据需要转移的Micro LED400的水平排布和竖直高度方向上的具体地形和地势选择性开启，从而控制转移装置的吸附区域或相应转移头200的吸附作用大小。\n\n[0081]如图4C和图4D所示，控制经上述步骤S2中得到吸附有Micro LED400的转移装置贴近具有预设安装位置的第三承载基板130，并使保持于所述转移装置的Micro LED400对准预设安装位置；然后，控制所述吸附器件220，将上述保持于所述转移装置上的Micro LED释放于所述预设安装位置。\n\n[0082]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0083]以上对本发明实施例所提供的一种转移装置及转移方法进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种转移装置及转移方法。\n\n背景技术\n\n[0002]在微发光二极管显示器制作工艺中，将Micro LED由中间承载板转移到TFT基板上进行Micro LED与TFT基板间的bonding是非常关键的一步。另外，对于TFT基板上Bonding后出现点亮异常的Micro LED，需要定点的把异常Micro LED去除。\n\n[0003]因此，需要高效的Micro LED转移工具可靠、精确、快速、廉价的完成转移。然而，目前存在的Micro LED转移头由于各自的缺陷，没办法比较可靠、定点、快速、廉价的对MicroLED进行转移。\n\n[0004]例如，在传统的静电转移头中，静电转移头与被吸取目标间的距离严重影响其吸附力的大小。图1为现有静电转移头的结构示意图，如图1所示，在利用图1中的静电转移头200吸取Micro LED200时，静电转移头200对所述MicroLED200的静电力与两者之间距离的平方成反比。\n\n[0005]因此，亟需提供一种可靠度和精度较高，且成本低廉的转移装置及转移方法，以解决上述问题。\n\n发明内容\n\n[0006]为了解决上述技术问题，本发明提供一种转移装置及转移方法，本发明所述转移装置的转移头通过电场单元、磁场发生器件和磁性粒子的配合，使MicroLED均能够被磁性粒子充分的接触，进而能克服传统的静电转移头中存在的吸头与被吸取目标间的距离严重影响吸附力的大小的问题。\n\n[0007]为了实现上述目的，本发明所述转移装置及转移方法采取了以下技术方案。\n\n[0008]本发明提供一种转移装置，包括一基板和设置于所述基板上的至少一转移头，所述转移头包括：一吸附器件和一磁场发生器件，其中：所述吸附器件设置于所述基板的一表面上并且在背离所述基板的表面上包括一吸附区，所述吸附器件至少用于：将预设距离范围内的Micro LED吸附于所述吸附区，或者，释放所述Micro LED；所述磁场发生器件设置于所述吸附器件和所述基板之间并被配置为通过产生磁场以至少用于：将预设距离范围内的磁性粒子吸附于所述吸附区上以形成一具有预设结构的接触层，使得所述接触层与吸附于所述吸附区的所述Micro LED接触，或者，从所述接触层释放所述磁性粒子。\n\n[0009]进一步，所述磁场发生器件包括至少一电磁线路层，所述电磁线路层包括一第一介电层和包覆于所述第一介电层的至少一电磁线圈；所述电磁线圈被配置为接收独立的电磁信号并根据所述电磁信号产生磁场；一第一介电层，所述第一介电层设置于包覆或半包覆所述电磁线圈。\n\n[0010]进一步，相邻两个转移的磁场发生器件内的各所述电磁线路层分别同层并分别通过所述第一介电层连续，以构成一磁场发生器件层。\n\n[0011]进一步，所述第一介电层为SiNx、SiOx或SiONx中的至少一种。\n\n[0012]进一步，所述转移装置包括阵列排布于所述基板上的复数个所述转移头；所述转移装置还包括复数个阻隔坝，所述阻隔坝设置于相邻的所述转移头之间并至少用于定义所述转移头的吸附区。\n\n[0013]在一优选实施例中，相邻两个转移的磁场发生器件内的各所述电磁线路层分别同层并分别通过所述第一介电层连续，以构成一磁场发生器件层；所述阻隔坝设置于所述磁场发生器件层背离所述基板的表面上并位于相邻的所述吸附器件之间，所述阻隔坝至少用于将相邻所述吸附单元的吸附区隔开。\n\n[0014]进一步，所述吸附器件包括至少一静电线路层，所述静电线路层包括：至少一静电电极，设置于所述磁场发生器件的背离所述基板的一侧；以及，第二介电层，设置在所述静电电极的背离所述基板的一侧并覆盖所述静电电极；其中，每一所述静电电极被配置为接收独立的静电信号并根据所述电信号产生作用于所述Micro LED的静电力。\n\n[0015]进一步，所述静电线路层包括同层且间隔设置的两个所述静电电极，并且所述静电电极分别配置不同极性的静电信号。\n\n[0016]进一步，所述第二介电层的材料为SiNx、SiOx或SiONx中的至少一种。\n\n[0017]进一步，所述磁性粒子为纳米磁性粒子，所述纳米磁性粒包括磁性内核和绝缘外壳，其中：所述磁性内核的材料为Fe2O3、Fe3O4、Co或Ni中的至少一种；所述绝缘外壳的材料为SiNx、SiOx或SiONx中的至少一种。\n\n[0018]进一步，所述磁性粒子尺寸范围为5nm-10um。\n\n[0019]进一步，所述接触层的厚度范围为100nm-50um。\n\n[0020]本发明提供一种基于任一项所述转移装置的转移方法，其特征在于，所述转移方法包括以下步骤：S1、开启磁场发生器件，并使所述转移头贴近装载有磁性粒子的第一承载基板，使所述转移头吸附磁性粒子，以吸附区上以形成一具有预设结构的接触层；S2、使所述转移头贴近装载有Micro LED的第二承载基板，并开启电场单元，以将所述Micro LED吸附于所述接触层；S3、使吸附有所述Micro LED的转移头对准一第三基板上的预设安位置，并调整所述电场单元，所述Micro LED被释放于预设安位置；以及，S4、调整所述磁场发生器件，以使所述磁性粒子复位并进入下一次转移操作。\n\n[0021]本发明所述转移装置及转移方法具有以下有益效果：\n\n[0022]本发明所述转移装置通过增设磁场发生器件，能在转移头的吸附区上吸附磁性粒子形成接触层，从而能使得的Micro LED均能够被磁性粒子充分的接触，进而能克服传统的静电转移头中存在的转移头与被吸取目标间的距离严重影响吸附力的大小的问题；通过增设电场单元、磁场发生器件和磁性粒子的配合，能使吸附电场和磁性粒子协同对Micro LED进行吸附，从而能将Micro LED从承载基板高效定点吸起；通过控制提供给磁场发生器件的电磁信号，能调整磁性粒子的数量及形状复位，进而能调整接触层的厚度后地形形状，最终能保证Micro LED与磁性粒子充分的接触。\n\n附图说明\n\n[0023]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0024]图1现有静电转移头的结构示意图。\n\n[0025]图2为本发明所述转移装置的第一实施例的示意图。\n\n[0026]图3为本发明所述转移装置的第二实施例的示意图。\n\n[0027]图4A-4D为本发明所述转移装置一实施例的工作过程示意图。\n\n具体实施方式\n\n[0028]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0029]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0030]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0031]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0032]下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0033]图2为本发明所述转移装置第一实施例的示意图，图3为本发明所述转移装置的第二实施例的示意图。如图2和图3所示，本发明提供一种转移装置，所述转移装置包括：一基板100、设置于所述基板100上的至少一转移头200以及位于相邻所述转移头200之间的阻隔坝300。\n\n[0034]如图2所示，所述转移头200包括：磁场发生器件210和吸附器件220。其中：所述吸附器件220设置于所述基板100的一表面上并且在背离所述基板100的表面包括一吸附区222，所述吸附器件220用于：将预设距离范围内的Micro LED400的吸附于所述吸附区222，或者，释放所述Micro LED400；所述磁场发生器件210设置于所述吸附器件220和所述基板100之间并被配置为通过产生磁场以至少用于：将预设距离范围内的磁性粒子501吸附于所述吸附区222上以形成一具有预设结构的接触层500，使得所述接触层500与吸附于所述吸附区222的所述Micro LED400接触，或者，从所述接触层500释放所述磁性粒子501。\n\n[0035]具体地，所述磁场发生器件210通过所述磁场还能使所述磁性粒子501对所述Micro LED400进行吸附。\n\n[0036]很显然，在本发明所述转移头200中，通过增设磁场发生器件210能在所述吸附区222上吸附磁性粒子501以形成接触层500，从而能使得接触层500与不同地势的MicroLED400均能充分的接触，进而能克服传统的静电转移头中存在的转移头与被吸取目标间的距离严重影响静电吸附力的大小的问题，最终能实现将Micro LED400从其承载基板高效定点吸起的目的。\n\n[0037]如图2所示，所述基板100用于承载所述吸附器件220或/和所述磁场发生器件210。例如，在本实施例中，所述磁场发生器件210和所述吸附器件220依次层叠于所述基板100的一表面上。\n\n[0038]在具体实施时，所述基板100可由诸如硅、陶瓷及聚合物这样的各种材料形成。\n\n[0039]如图2所示，所述磁场发生器件210设置于所述基板100上，并且所述磁场发生器件210被配置为对预设距离范围内的磁性粒子501产生吸附力，以控制所述磁性粒子501覆盖于所述吸附区222上。\n\n[0040]如图2所示，所述磁场发生器件210包括至少一电磁线路层211，所述电磁线路层211包括一第一介电层2111和设置于所述第一介电层2111内的至少一电磁线圈2112，每一所述电磁线圈2112被配置为接收独立的电磁信号并根据所述电磁信号产生作用于所述磁性粒子501的磁场。\n\n[0041]通过将每一所述电磁线圈2112分别配置独立的电磁信号，能实现对每一电磁线圈2112以及所述磁场发生器件210的单独控制，从而能用于执行单个MicroLED400的转移或多个Micro LED400的转移。\n\n[0042]在一优选实施例中，相邻所述磁场发生器件210内的各所述电磁线路层211分别同层并分别通过第一介电层2111相连续，以构成一磁场发生器件层。例如，本领域技术人员可以理解，将多个转移头200的各第一介电层2111整层制作，而所述电磁线圈2112分布于各层所述第一介电层2111的与所述转移头200的对应的区域内，从而能形成上述磁场发生器件层。\n\n[0043]例如，如图2所示，在本实施例中，多个转移头200的磁场发生器件210均包括依次层叠于所述基板100上的三层电磁线路层211，并且所述转移头200的对应层的所述电磁线路层211分别同层并相互连续。\n\n[0044]需要指出的时，图2仅本发明所述磁场发生器件210的示意性结构。本发明并未对磁场发生器件210中的电磁线路的211的堆叠层数或堆叠结构、第一介电层2111的厚度、材料或结构，或者，所述电磁线圈2112的材料、结构或布局进行限定，只要所述磁场发生器件210的中电磁线路的211、第一介电层2111或电磁线圈2112的具体配置方式适当，能用于所述磁性粒子501的吸附或释放以及形成接触层500。例如，在一所述转移装置中，不同的所述转移头200中的电磁线路的211层数、第一介电层2111的厚度或电磁线圈2112的排布方式均可以不同。\n\n[0045]具体地，所述第一介电层2111为SiNx、SiOx或SiONx中的至少一种。例如，在本实施例中，所述第一介电层2111选用SiONx。\n\n[0046]具体地，所述电磁线圈2112采用铜或者铝等金属线圈。在具体实施时，所述电磁线圈2112采用螺旋结构线圈。\n\n[0047]需要说明的是，图2仅示意性地给所述电磁线圈2112的布局结构、材料或形状。在具体实施时，所述电磁线圈2112的布局结构、材料或形状也可根据实际情况灵活设定。\n\n[0048]具体地，所述电磁信号为电流信号。通过向所述电磁线圈2112接入电流信号，所述电磁线圈2112产生作用于磁性粒子501的磁场。\n\n[0049]在具体实施时，控制提供给所述电磁线圈2112的电流信号，能调整该电磁线圈2112产生磁场的强度或方向，进而能调整所述磁性粒子501的附着数量、堆叠形状或复位。也就是，通过控制所述电磁线圈2112通入的电流信号，能控制由所述磁性粒子501附着形成的接触层500的结构。\n\n[0050]如图2所示，处于所述预设距离范围内的磁性粒子501能在所述磁场发生器件210产生的磁场的作用下，被吸附于所述吸附区222上，以形成具有预设结构的接触层500。具体来讲，当所述磁性粒子501朝向所述转移头200的吸附区222设置并处于所述磁场发生器件210的产生的磁场的作用范围内时，所述磁性粒子501能在所述磁场的吸附作用下保持于所述吸附区222上，进而形成覆盖所述吸附区222的接触层500。\n\n[0051]通过采用由所述磁性粒子501堆叠形成的接触层500，能通过磁场调整接触层500的形状和厚度，从而能保障所述Micro LED400与吸附头100充分接触，还能保障所述吸附器件220对所述Micro LED400强的吸附作用。\n\n[0052]如图2所示，所述接触层500覆盖于所述吸附区222的背离所述基板100的一侧上，以用于与吸附于所述吸附区222的所述Micro LED400接触。并且，所述接触层500由在所述磁场发生器件210的作用下吸附并保持于在所述吸附区222上的所述磁性粒子501构成。\n\n[0053]如前所述，在具体实施时，能通过控制所述磁场发生器件210接入的电磁信号，以控制所述磁性粒子501在所述吸附区222的堆叠数量或堆叠形状，进而控制所述接触层500的地势结构或厚度变化。\n\n[0054]具体地，所述接触层500的厚度范围为100nm-50um。将接触层500厚度控制在上述范围内，以确保所述转移头200对所述Micro LED400的紧密贴合效果和较强的吸附力。\n\n[0055]具体地，所述磁性粒子501为纳米磁性粒子，所述纳米磁性粒包括磁性内核和绝缘外壳。其中，所述磁性内核的材料为Fe2O3,Fe3O4,Co,或Ni中的至少一种。所述绝缘外壳的材料为SiOx。在其他实施例中，形成所述磁性内核的材料还可以为镍氧化物或者钴氧化物。所述绝缘外壳的材料氮化硅或者氧化硅和氮化硅的复合物。\n\n[0056]具体地，所述磁性粒子501尺寸范围为5nm-10um。通过将所述磁性粒子501的尺寸控制在一定范围内，能更精准地控制所述接触层500的地势结构或厚度变化，进而实现转移头200和各个不平坦的Micro LED400的充分接触。\n\n[0057]如图2所示，所述吸附器件220设置在所述磁场发生器件210的背离所述基板100的表面上，并且所述吸附器件220的背离所述基板100的表面上具有一吸附区222，所述吸附器件220被配置为用于将预设距离范围内的Micro LED400吸附于所述吸附区222或释放所述Micro LED400。需要指明的是，本发明并未对此处的预设距离范围进行具体限定，只要使得所述转移头200能将Micro LED400吸附于其吸附区222即可。\n\n[0058]如图2所示，所述吸附器件220包括：至少一静电电路层221，所述静电电路层221包括一个或多个静电电极2212和第二介电层2211。其中第二介电层2211设置在所述静电电极2212的背离所述基板100的一侧并覆盖所述静电电极2212，其中所述静电电极2212被配置为接收独立的静电信号并根据所述静电信号产生作用于所述Micro LED400的静电力。\n\n[0059]通过将每一所述静电电极2212分别配置独立的静电信号，能实现对每一静电电极2212以及每一所述吸附器件220的单独控制，从而能用于执行单个MicroLED400转移或多个Micro LED400转移。\n\n[0060]具体地，所述静电电路层221包括同层且间隔设置的两个所述静电电极2212，并且两个所述静电电极2212分别配置不同极性的静电信号。例如，如图2所示，在本实施例中，不同的转移头200的静电电路层221分别被配置为包括一个或两个静电电极2212。\n\n[0061]具体地，所述静电电极2212的材料为铜或铝。在其他实施例中，所述静电电极2212的材料还可以为镍或银。\n\n[0062]具体地，所述静电电极2212可以为单层结构，还可以为叠层结构，本申请实施例对此不作任何限定。需要说明的是，图2是以所述静电电极为单层结构为例进行说明的。\n\n[0063]具体地，所述第二介电层2111为SiNx、SiOx或SiONx中的至少一种。例如，在本实施例中，所述第二介电层2111选用SiONx。\n\n[0064]至此，利用一转移头200进行Micro LED400转移过程中：在将Micro LED400吸附所述吸附区222之前，该转移头200通过控制其内磁场发生器件210的电磁信号能吸附并控制磁性粒子501在所述吸附区222形成具有预设结构的接触层500，从而能保证后续被吸附的Micro LED400能与该接触层500充分接触。基于上述过程，所述转移头200能通过其吸附器件220或/和所述接触层500中的磁性粒子501的吸附作用对Micro LED400产生强的吸附作用，进而可以将Micro LED400从承载基板高效定点吸起。\n\n[0065]如图2所示，在所述基板100上还设置有多个阻隔坝300，所述阻隔坝300位于相邻的所述转移头200的之间，并至少用以定义所述转移头200的吸附区222。\n\n[0066]例如，如图2所示，在本实施例中，相邻两个转移头200的磁场发生器件210内的各所述电磁线路层211分别同层并分别通过所述第一介电层2111连续，以构成一磁场发生器件层，所述阻隔坝300设置于所述磁场发生器件层的背离所述基板100的一侧并位于相邻的所述吸附器件220之间，用以将相邻所述吸附器件220的吸附区222隔开。\n\n[0067]需要说明的是，为了能够同时拾取多个发光二极管，上述转移装置包括多个转移头200，本发明实施例中的各附图中，为了更清楚的示意转移装置的结构，仅以转移装置中的其中一个或两个转移头200为例进行示意，在具体实施时，可以根据实际需要设置转移头200的数量和分布，此处不做限定。\n\n[0068]图3为本发明所述转移装置的第二实施例的示意图。与图2所示的转移装置相比，图3所示转移装置的主要区别点在于，在所述转移头200的吸附器件220中，每一所述静电电路层221仅包括一静电电极2212。\n\n[0069]图4A-4D为本发明所述转移装置的工作过程示意图。如图4A-4D所示，本发明还提供一种基于本发明所述转移装置的转移方法，所述转移方法包括以下步骤：\n\n[0070]S0、提供一本发明所述转移装置；\n\n[0071]S1、开启磁场发生器件，并使所述转移头贴近装载有磁性粒子的第一承载基板，使所述转移头吸附磁性粒子，以吸附区上以形成一具有预设结构的接触层；\n\n[0072]S2、使所述转移头贴近装载有Micro LED的第二承载基板，并开启电场单元，以将所述Micro LED吸附于所述接触层；\n\n[0073]S3、使吸附有所述Micro LED的转移头对准一第三基板上的预设安位置，并调整所述电场单元，所述Micro LED被释放于预设安位置；以及，\n\n[0074]S4、调整所述磁场发生器件，以使所述磁性粒子复位并进入下一次转移操作。\n\n[0075]在步骤SO中，首先提供本发明所述转移装置。例如，如图4A-图4D所示，在本实施例中，采用上述图3所示的转移装置。在其他实施例中，可以采用图2所示的转移装置。\n\n[0076]需要注意的是，图2和图3仅为本发明所述转移装置的示意性结构图。在实现本发明所述转移方法时，并不仅限于图2和图3所示的转移装置。\n\n[0077]如图4A所示，在步骤S1中，控制开启所述转移装置中的转移头200的磁场发生器件210，并使所述转移头200的吸附区220的朝向承载基板110的承载有磁性粒子501的一侧贴近到预设距离内，从而将所述磁性粒子501吸附于所述吸附区220，以形成具有预设厚度或预设结构的接触层500。\n\n[0078]需要理解，此处并未限定于开启所述转移装置内所有转移头200内的所有电磁线路层211同时接入电磁信号。在具体实施时，可以根据需要进行转移的MicroLED400的水平和/或竖直方向上的具体地形和地势选择性开启，从而控制所述接触层500的厚度或地形。或者称，依据待转移Micro LED400的实际位置或地形，选择性地开启或控制与该待转移Micro LED400对应的转移头200内的部分或全部所有电磁线路层211。\n\n[0079]如图4B所示，在步骤S2中，将步骤S1得到的形成有接触层500的所述转移装置朝向第二承载基板120的承载有Micro LED400的一面贴近到预设距离范围内，并控制开启相对应的吸附器件210。在此过程中，所述转移头200利用其吸附器件210对所述Micro LED400的吸附作用，将所述Micro LED400吸附于所述接触层500，使得所述Micro LED400与所述接触层500接触并保持于所述接触层500。\n\n[0080]相似地，此处并未限定于将所述转移装置内所有转移头200内的所有吸附器件或所有静电线路层221内均接入电磁信号。在具体实施时，可以根据需要转移的Micro LED400的水平排布和竖直高度方向上的具体地形和地势选择性开启，从而控制转移装置的吸附区域或相应转移头200的吸附作用大小。\n\n[0081]如图4C和图4D所示，控制经上述步骤S2中得到吸附有Micro LED400的转移装置贴近具有预设安装位置的第三承载基板130，并使保持于所述转移装置的Micro LED400对准预设安装位置；然后，控制所述吸附器件220，将上述保持于所述转移装置上的Micro LED释放于所述预设安装位置。\n\n[0082]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0083]以上对本发明实施例所提供的一种转移装置及转移方法进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10845, 23899, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种具有扬声器的显示装置。\n\n背景技术\n\n[0002]传统的显示装置，其扬声器一般设置在显示装置的非显示区内。但是随着显示装置越来越朝向超薄化和全面屏设计的方向发展，非显示区的空间越来越小，扬声器的安装位置受限。且传统的扬声器体积较大，设置在非显示区，会导致显示装置的屏占比大幅度下降。\n\n[0003]因为OLED(Organic Light Emitting Diode，有机发光二极管)显示面板的柔性和轻薄特性，相对容易被驱动，利用屏内发声技术以显示面板的机械振动发声的扬声器一般适用于OLED显示装置，不适用于面板结构相对复杂的LCD(Liquid Crystal Display，液晶显示)显示装置。因此，传统的扬声器应用领域受限。\n\n发明内容\n\n[0004]为了解决上述问题，本申请的目的在于提供一种扬声器对应设置在显示区的显示装置，以解决扬声器放置在非显示区导致的屏占比降低问题，且所述扬声器不仅适用于OLED显示装置还适用于LCD、Micro-LED(Micro Light Emitting Diode，微型发光二极管)和Mini-LED(Mini Light Emitting Diode，迷你发光二极管)显示装置。\n\n[0005]本申请提供一种显示装置，所述显示装置包括：\n\n[0006]显示面板，具有一显示面；\n\n[0007]扬声器安装部，设置于所述显示面板远离所述显示面的一侧，所述扬声器安装部与所述显示面板之间具有一空隙部；\n\n[0008]扬声器，与所述显示装置的显示区对应设置；\n\n[0009]所述扬声器包括驱动线圈和驱动磁体，所述驱动线圈设于所述显示面板朝向所述扬声器安装部的一侧，所述驱动磁体位于所述扬声器安装部远离所述显示面板的一侧；所述驱动磁体用于产生磁场，所述驱动线圈用于在通电时，在驱动磁体产生的磁场中，带动所述显示面板在所述显示面的垂直方向上振动，使所述显示装置发出声音。\n\n[0010]进一步的，在一些实施方式中，所述显示面板为液晶显示面板，所述扬声器安装部为背光模组。\n\n[0011]进一步的，在一些实施方式中，所述显示面板为OLED显示面板、Micro-LED显示面板或Mini-LED显示面板，所述扬声器安装部为所述OLED显示面板、Micro-LED显示面板或Mini-LED显示面板的背面固定机构。\n\n[0012]进一步的，在一些实施方式中，所述驱动线圈的所在面平行于所述显示面，所述驱动磁体的磁极垂直于所述显示面。\n\n[0013]进一步的，在一些实施方式中，所述驱动磁体包括至少一对垂直于所述显示面的N极和S极，所述驱动线圈包括至少一个线圈单元，每个所述线圈单元对应相邻所述N极和所述S极之间的间隔。\n\n[0014]进一步的，在一些实施方式中，所述显示面板包括上偏光板、下偏光板和位于所述上偏光板与所述下偏光板之间的玻璃基板，所述驱动线圈位于所述玻璃基板或所述下偏光板远离所述显示面的一侧。\n\n[0015]进一步的，在一些实施方式中，所述驱动线圈为弓字型的导线，所述弓字型的导线横向设置于所述显示面的平行面。\n\n[0016]进一步的，在一些实施方式中，所述导线的直径尺寸为微米级别。\n\n[0017]进一步的，在一些实施方式中，所述驱动磁体包括至少两个条型磁铁，每个条型磁铁的N极至S极的方向与相邻条形磁铁的N极至S极的方向相反。\n\n[0018]进一步的，在一些实施方式中，所述驱动磁体包括至少一个U型磁铁，所述U型磁铁的N极和S极垂直于所述显示面。\n\n[0019]和现有技术相比，本申请具有以下技术效果和优点：\n\n[0020]本申请提供的显示装置，包括显示面板和与显示面板间隔设置的扬声器安装部，扬声器包括驱动线圈和驱动磁体，将驱动线圈设置在显示面板朝向扬声器安装部的一侧，驱动磁体位于扬声器安装部远离显示面板的一侧；驱动磁体用于产生磁场，驱动线圈用于在通电时，在驱动磁体产生的磁场中，带动显示面板在所述显示面的垂直方向上振动，使显示面板发出声音。该扬声器和显示装置的显示区对应设置，提高了显示装置的屏占比，提升了视觉效果。微米级别的驱动线圈通过打印等技术设置在显示面板的内部或表面，驱动磁体设置在背光模组或OLED面板背面固定机构远离显示面板的一侧，设置简单，体积小，不会降低显示面板的轻薄性。驱动磁体设置在显示面板内部或表面，更有效的驱动显示面板一起振动，适用于LCD或OLED等显示装置，应用领域广。\n\n附图说明\n\n[0021]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0022]图1为本申请实施例提供的显示装置的结构侧视图。\n\n[0023]图2为本申请实施例提供的显示装置的部分平面结构示意图。\n\n[0024]图3为图2所示的显示装置沿A-A’线的剖面结构示意图。\n\n[0025]图4为本申请实施例提供的驱动线圈的一个线圈单元的结构示意图。\n\n[0026]具体实施例\n\n[0027]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0028]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0029]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0030]下文的公开提供了许多不同的实施例或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施例和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0031]图1为本申请实施例提供的显示装置的结构侧视图。如图1所示，本申请一实施例提供一种显示装置100，包括一显示面板110，具有一显示面111；一扬声器安装部120，设置于所述显示面板110远离所述显示面111的一侧，所述扬声器安装部120与所述显示面板110之间具有一空隙部(Air Gap)以允许显示面板110在该空隙部中做适当幅度地振动；一扬声器130，与所述显示装置100的显示区对应设置；\n\n[0032]扬声器130包括驱动线圈131和驱动磁体132，驱动线圈131设于显示面板110朝向扬声器安装部120的一侧，驱动磁体132位于扬声器安装部120远离显示面板110一侧；驱动磁体132用于产生磁场，驱动线圈131用于在通电时，在驱动磁体132产生的磁场中，带动显示面板110在所述显示面111的垂直方向(z轴方向)上振动，使显示装置100发出声音。\n\n[0033]在一些实施例中，显示面板110可以为液晶显示面板，扬声器安装部120可以为背光模组。具体的，显示面板110包括上偏光板、下偏光板和位于所述上偏光板与所述下偏光板之间的液晶盒，所述液晶盒包括彩色滤光片和对盒设置的TFT阵列基板，所述彩色滤光片和所述TFT阵列基板之间具有液晶。在一些实施例中所述驱动线圈131可以设置于所述TFT阵列基板远离显示面111的一侧，也可以设置于所述下偏光板远离显示面111的一侧。\n\n[0034]在一些实施例中，显示面板110可以为OLED显示面板、Micro-LED显示面板或Mini-LED显示面板，扬声器安装部120可以为所述OLED显示面板、Micro-LED显示面板或Mini-LED显示面板的背面固定机构。所述背面固定机构具有和显示面板110对应设置的固定板，用于固定OLED显示面板、Micro-LED显示面板或Mini-LED显示面板。\n\n[0035]具体的，显示面板110可以包括基板和位于基板一侧的OLED器件，所述OLED器件可以包括对应设置的第一电极层、发光层和第二电极层，还可以包括偏光板，具体结构请参考现有技术，在这里不再赘述。驱动线圈131可以设置于所述基板远离所述显示面111的表面。驱动磁体132可以设置于OLED显示面板的背面固定机构远离该显示面板的一侧。\n\n[0036]在其他一些实施例中，显示面板110可以包括基板和位于基板一侧的Micro-LED器件或Mini-LED器件。驱动线圈131可以设置于所述基板远离所述显示面的表面。驱动磁体132可以设置于Micro-LED或Mini-LED显示面板的背面固定机构远离该显示面板的一侧。\n\n[0037]图2为本申请实施例提供的显示装置的部分平面结构示意图。图3为图2所示的显示装置沿A-A’线的剖面结构示意图。如图2和图3所示，驱动线圈131的所在面平行于显示面板110的显示面111，驱动磁体132的磁极垂直于显示面111。驱动磁体132包括至少一对垂直于显示面111的N极和S极，驱动线圈131包括至少一个线圈单元1310，每个线圈单元1310对应相邻N极和S极之间的间隔设置。\n\n[0038]如图3所示，间隔设置的N极和S极之间产生磁场，在驱动磁体132外部，磁场中磁感线1320的方向从N极指向S极。在一些实施例中，驱动磁体132包括至少两个条型磁铁，每个条型磁铁的N极至S极的方向与相邻条形磁铁的N极至S极的方向相反。在其他一些实施例中，驱动磁体132可以包括至少一个U型磁铁，所述U型磁铁的N极和S极垂直于显示面111。通电时，驱动线圈131内y轴方向的电流垂直于磁感线1320的方向，在安培力的作用下，驱动线圈131运动，并带动显示面板110一起振动。\n\n[0039]图4为本申请实施例提供的驱动线圈的一个线圈单元的结构示意图。如图4所示，在本实施例中，线圈单元1310可以为弓字型的导线，所述弓字型的导线横向(x轴方向)设置于所述显示面111的平行面。线圈单元1310在图4中的虚线框内包括多个y轴方向并行设置的导线。所述y轴方向并行设置的导线的条数为N，在本实施例中，N可以为4，分别为第一导线1311、第二导线1312、第三导线1313和第四导线1314。在其他实施例中，N不限于4，可以为大于等于2的任意整数。\n\n[0040]值得说明的是，在本申请中所述横向是指显示面111的水平方向，如图1至图4所示，所述水平方向指的是所示坐标系的x轴方向。显示面111的竖直方向指的是同一坐标系的y轴方向。显示面11的垂直方向指的是同一坐标系的z轴方向。横向设置的弓字型结构使线圈单元1310内的电流的方向更多的沿y轴方向，相应的，线圈单元1310在磁场中会受到更大的z轴方向上的安培力，显示面板受到较大的驱动力，在显示面的垂直方向上振动，振动均匀，发声效果好。驱动线圈产生的较大的驱动力不仅可以驱动轻薄的OLED面板，也可以驱动结构较复杂的LCD面板，有效的解决了传统扬声器不能应用于LCD显示装置的缺点。\n\n[0041]线圈单元1310中y轴方向上的相邻导线之间的间距d1可以相同也可以不相同，d1可以为50um-20mm。在其他一些实施例中d1可以为50um-1mm。所述导线的直径尺寸d2可以为2um-20mm。在其他一些实施例中d2可以为2um-100um。驱动线圈131的x轴方向上的宽度可以为大于等于5厘米，小于等于显示面的x轴方向上的最大尺寸；y轴方向上的宽度可以为大于等于5厘米，小于等于显示面的y轴方向上的最大尺寸。导线可以通过印刷、电镀或刻蚀等方法先制作于承载胶材上，然后再转移至显示面板110的表面或内部。微米级别的尺寸使得驱动线圈131的体积较小，在显示面板110的表面或内部占用空间不大，不增加显示面板110的厚度。在一些实施例中，导线的材质可以为导电性较好的金属，例如银(Ag)、铜(Cu)等；在其他一些实施例中，导线的材质可以为透明电极材料。\n\n[0042]此外，本申请提供的显示装置100还包括供电信号控制机构，所述供电信号控制机构的一端与驱动线圈131电连接，另一端与显示装置100的印刷电路板电性连接，所述供电信号控制机构控制所述驱动线圈131的音频信号电流大小和所述音频信号的变化频率。应当理解的是，一个完整的显示装置通常包括显示面板、驱动板、驱动芯片等显示部件，本申请实施例仅示例性的介绍了与扬声器直接相关的显示装置的部分结构。在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0043]本申请实施例提供的一种显示装置，包括扬声器，对应设置于显示装置的显示区内，提高显示面板的屏占比；扬声器包括驱动线圈和驱动磁体，微米级别的驱动线圈设于显示面板的背面或内部；在驱动磁体产生的磁场中，带动所述显示面板在所述显示面的垂直方向上振动，使所述显示装置发出声音。横向设置且平行于显示面的弓字型线圈单元，包括竖直方向(y轴方向)并行的导线，此种结构的线圈单元使其内的电流方向更多的沿y轴方向，在垂直于磁场方向的情况下，线圈单元受到较大的垂直显示面的作用力，显示面板受到的驱动力也相应增加，显示面板振动均匀，提高了显示装置的发声效果。\n\n[0044]以上对本申请所提供的一种显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施例进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种具有扬声器的显示装置。\n\n背景技术\n\n[0002]传统的显示装置，其扬声器一般设置在显示装置的非显示区内。但是随着显示装置越来越朝向超薄化和全面屏设计的方向发展，非显示区的空间越来越小，扬声器的安装位置受限。且传统的扬声器体积较大，设置在非显示区，会导致显示装置的屏占比大幅度下降。\n\n[0003]因为OLED(Organic Light Emitting Diode，有机发光二极管)显示面板的柔性和轻薄特性，相对容易被驱动，利用屏内发声技术以显示面板的机械振动发声的扬声器一般适用于OLED显示装置，不适用于面板结构相对复杂的LCD(Liquid Crystal Display，液晶显示)显示装置。因此，传统的扬声器应用领域受限。\n\n发明内容\n\n[0004]为了解决上述问题，本申请的目的在于提供一种扬声器对应设置在显示区的显示装置，以解决扬声器放置在非显示区导致的屏占比降低问题，且所述扬声器不仅适用于OLED显示装置还适用于LCD、Micro-LED(Micro Light Emitting Diode，微型发光二极管)和Mini-LED(Mini Light Emitting Diode，迷你发光二极管)显示装置。\n\n[0005]本申请提供一种显示装置，所述显示装置包括：\n\n[0006]显示面板，具有一显示面；\n\n[0007]扬声器安装部，设置于所述显示面板远离所述显示面的一侧，所述扬声器安装部与所述显示面板之间具有一空隙部；\n\n[0008]扬声器，与所述显示装置的显示区对应设置；\n\n[0009]所述扬声器包括驱动线圈和驱动磁体，所述驱动线圈设于所述显示面板朝向所述扬声器安装部的一侧，所述驱动磁体位于所述扬声器安装部远离所述显示面板的一侧；所述驱动磁体用于产生磁场，所述驱动线圈用于在通电时，在驱动磁体产生的磁场中，带动所述显示面板在所述显示面的垂直方向上振动，使所述显示装置发出声音。\n\n[0010]进一步的，在一些实施方式中，所述显示面板为液晶显示面板，所述扬声器安装部为背光模组。\n\n[0011]进一步的，在一些实施方式中，所述显示面板为OLED显示面板、Micro-LED显示面板或Mini-LED显示面板，所述扬声器安装部为所述OLED显示面板、Micro-LED显示面板或Mini-LED显示面板的背面固定机构。\n\n[0012]进一步的，在一些实施方式中，所述驱动线圈的所在面平行于所述显示面，所述驱动磁体的磁极垂直于所述显示面。\n\n[0013]进一步的，在一些实施方式中，所述驱动磁体包括至少一对垂直于所述显示面的N极和S极，所述驱动线圈包括至少一个线圈单元，每个所述线圈单元对应相邻所述N极和所述S极之间的间隔。\n\n[0014]进一步的，在一些实施方式中，所述显示面板包括上偏光板、下偏光板和位于所述上偏光板与所述下偏光板之间的玻璃基板，所述驱动线圈位于所述玻璃基板或所述下偏光板远离所述显示面的一侧。\n\n[0015]进一步的，在一些实施方式中，所述驱动线圈为弓字型的导线，所述弓字型的导线横向设置于所述显示面的平行面。\n\n[0016]进一步的，在一些实施方式中，所述导线的直径尺寸为微米级别。\n\n[0017]进一步的，在一些实施方式中，所述驱动磁体包括至少两个条型磁铁，每个条型磁铁的N极至S极的方向与相邻条形磁铁的N极至S极的方向相反。\n\n[0018]进一步的，在一些实施方式中，所述驱动磁体包括至少一个U型磁铁，所述U型磁铁的N极和S极垂直于所述显示面。\n\n[0019]和现有技术相比，本申请具有以下技术效果和优点：\n\n[0020]本申请提供的显示装置，包括显示面板和与显示面板间隔设置的扬声器安装部，扬声器包括驱动线圈和驱动磁体，将驱动线圈设置在显示面板朝向扬声器安装部的一侧，驱动磁体位于扬声器安装部远离显示面板的一侧；驱动磁体用于产生磁场，驱动线圈用于在通电时，在驱动磁体产生的磁场中，带动显示面板在所述显示面的垂直方向上振动，使显示面板发出声音。该扬声器和显示装置的显示区对应设置，提高了显示装置的屏占比，提升了视觉效果。微米级别的驱动线圈通过打印等技术设置在显示面板的内部或表面，驱动磁体设置在背光模组或OLED面板背面固定机构远离显示面板的一侧，设置简单，体积小，不会降低显示面板的轻薄性。驱动磁体设置在显示面板内部或表面，更有效的驱动显示面板一起振动，适用于LCD或OLED等显示装置，应用领域广。\n\n附图说明\n\n[0021]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0022]图1为本申请实施例提供的显示装置的结构侧视图。\n\n[0023]图2为本申请实施例提供的显示装置的部分平面结构示意图。\n\n[0024]图3为图2所示的显示装置沿A-A’线的剖面结构示意图。\n\n[0025]图4为本申请实施例提供的驱动线圈的一个线圈单元的结构示意图。\n\n[0026]具体实施例\n\n[0027]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0028]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0029]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0030]下文的公开提供了许多不同的实施例或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施例和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0031]图1为本申请实施例提供的显示装置的结构侧视图。如图1所示，本申请一实施例提供一种显示装置100，包括一显示面板110，具有一显示面111；一扬声器安装部120，设置于所述显示面板110远离所述显示面111的一侧，所述扬声器安装部120与所述显示面板110之间具有一空隙部(Air Gap)以允许显示面板110在该空隙部中做适当幅度地振动；一扬声器130，与所述显示装置100的显示区对应设置；\n\n[0032]扬声器130包括驱动线圈131和驱动磁体132，驱动线圈131设于显示面板110朝向扬声器安装部120的一侧，驱动磁体132位于扬声器安装部120远离显示面板110一侧；驱动磁体132用于产生磁场，驱动线圈131用于在通电时，在驱动磁体132产生的磁场中，带动显示面板110在所述显示面111的垂直方向(z轴方向)上振动，使显示装置100发出声音。\n\n[0033]在一些实施例中，显示面板110可以为液晶显示面板，扬声器安装部120可以为背光模组。具体的，显示面板110包括上偏光板、下偏光板和位于所述上偏光板与所述下偏光板之间的液晶盒，所述液晶盒包括彩色滤光片和对盒设置的TFT阵列基板，所述彩色滤光片和所述TFT阵列基板之间具有液晶。在一些实施例中所述驱动线圈131可以设置于所述TFT阵列基板远离显示面111的一侧，也可以设置于所述下偏光板远离显示面111的一侧。\n\n[0034]在一些实施例中，显示面板110可以为OLED显示面板、Micro-LED显示面板或Mini-LED显示面板，扬声器安装部120可以为所述OLED显示面板、Micro-LED显示面板或Mini-LED显示面板的背面固定机构。所述背面固定机构具有和显示面板110对应设置的固定板，用于固定OLED显示面板、Micro-LED显示面板或Mini-LED显示面板。\n\n[0035]具体的，显示面板110可以包括基板和位于基板一侧的OLED器件，所述OLED器件可以包括对应设置的第一电极层、发光层和第二电极层，还可以包括偏光板，具体结构请参考现有技术，在这里不再赘述。驱动线圈131可以设置于所述基板远离所述显示面111的表面。驱动磁体132可以设置于OLED显示面板的背面固定机构远离该显示面板的一侧。\n\n[0036]在其他一些实施例中，显示面板110可以包括基板和位于基板一侧的Micro-LED器件或Mini-LED器件。驱动线圈131可以设置于所述基板远离所述显示面的表面。驱动磁体132可以设置于Micro-LED或Mini-LED显示面板的背面固定机构远离该显示面板的一侧。\n\n[0037]图2为本申请实施例提供的显示装置的部分平面结构示意图。图3为图2所示的显示装置沿A-A’线的剖面结构示意图。如图2和图3所示，驱动线圈131的所在面平行于显示面板110的显示面111，驱动磁体132的磁极垂直于显示面111。驱动磁体132包括至少一对垂直于显示面111的N极和S极，驱动线圈131包括至少一个线圈单元1310，每个线圈单元1310对应相邻N极和S极之间的间隔设置。\n\n[0038]如图3所示，间隔设置的N极和S极之间产生磁场，在驱动磁体132外部，磁场中磁感线1320的方向从N极指向S极。在一些实施例中，驱动磁体132包括至少两个条型磁铁，每个条型磁铁的N极至S极的方向与相邻条形磁铁的N极至S极的方向相反。在其他一些实施例中，驱动磁体132可以包括至少一个U型磁铁，所述U型磁铁的N极和S极垂直于显示面111。通电时，驱动线圈131内y轴方向的电流垂直于磁感线1320的方向，在安培力的作用下，驱动线圈131运动，并带动显示面板110一起振动。\n\n[0039]图4为本申请实施例提供的驱动线圈的一个线圈单元的结构示意图。如图4所示，在本实施例中，线圈单元1310可以为弓字型的导线，所述弓字型的导线横向(x轴方向)设置于所述显示面111的平行面。线圈单元1310在图4中的虚线框内包括多个y轴方向并行设置的导线。所述y轴方向并行设置的导线的条数为N，在本实施例中，N可以为4，分别为第一导线1311、第二导线1312、第三导线1313和第四导线1314。在其他实施例中，N不限于4，可以为大于等于2的任意整数。\n\n[0040]值得说明的是，在本申请中所述横向是指显示面111的水平方向，如图1至图4所示，所述水平方向指的是所示坐标系的x轴方向。显示面111的竖直方向指的是同一坐标系的y轴方向。显示面11的垂直方向指的是同一坐标系的z轴方向。横向设置的弓字型结构使线圈单元1310内的电流的方向更多的沿y轴方向，相应的，线圈单元1310在磁场中会受到更大的z轴方向上的安培力，显示面板受到较大的驱动力，在显示面的垂直方向上振动，振动均匀，发声效果好。驱动线圈产生的较大的驱动力不仅可以驱动轻薄的OLED面板，也可以驱动结构较复杂的LCD面板，有效的解决了传统扬声器不能应用于LCD显示装置的缺点。\n\n[0041]线圈单元1310中y轴方向上的相邻导线之间的间距d1可以相同也可以不相同，d1可以为50um-20mm。在其他一些实施例中d1可以为50um-1mm。所述导线的直径尺寸d2可以为2um-20mm。在其他一些实施例中d2可以为2um-100um。驱动线圈131的x轴方向上的宽度可以为大于等于5厘米，小于等于显示面的x轴方向上的最大尺寸；y轴方向上的宽度可以为大于等于5厘米，小于等于显示面的y轴方向上的最大尺寸。导线可以通过印刷、电镀或刻蚀等方法先制作于承载胶材上，然后再转移至显示面板110的表面或内部。微米级别的尺寸使得驱动线圈131的体积较小，在显示面板110的表面或内部占用空间不大，不增加显示面板110的厚度。在一些实施例中，导线的材质可以为导电性较好的金属，例如银(Ag)、铜(Cu)等；在其他一些实施例中，导线的材质可以为透明电极材料。\n\n[0042]此外，本申请提供的显示装置100还包括供电信号控制机构，所述供电信号控制机构的一端与驱动线圈131电连接，另一端与显示装置100的印刷电路板电性连接，所述供电信号控制机构控制所述驱动线圈131的音频信号电流大小和所述音频信号的变化频率。应当理解的是，一个完整的显示装置通常包括显示面板、驱动板、驱动芯片等显示部件，本申请实施例仅示例性的介绍了与扬声器直接相关的显示装置的部分结构。在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0043]本申请实施例提供的一种显示装置，包括扬声器，对应设置于显示装置的显示区内，提高显示面板的屏占比；扬声器包括驱动线圈和驱动磁体，微米级别的驱动线圈设于显示面板的背面或内部；在驱动磁体产生的磁场中，带动所述显示面板在所述显示面的垂直方向上振动，使所述显示装置发出声音。横向设置且平行于显示面的弓字型线圈单元，包括竖直方向(y轴方向)并行的导线，此种结构的线圈单元使其内的电流方向更多的沿y轴方向，在垂直于磁场方向的情况下，线圈单元受到较大的垂直显示面的作用力，显示面板受到的驱动力也相应增加，显示面板振动均匀，提高了显示装置的发声效果。\n\n[0044]以上对本申请所提供的一种显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施例进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10846, 23900, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种拼接显示屏。\n\n背景技术\n\n[0002]目前，传统显示屏均需通过覆晶薄膜或柔性电路板绑定的模组工艺将面板所需讯号输入到面内。因面板设计上通常需要先通过扇形区将面内信号线进行收束，将其集中到一小块绑定区域，再将覆晶薄膜或柔性电路板绑定在绑定区域，在印刷电路板和玻璃基板之间形成电性连接，从而使得键合区宽度通常较大。进一步的，键合区过大时，会影响显示屏的外观品位，若用于拼接屏用途时，会有明显的拼缝，进而影响拼接显示的效果。由于覆晶薄膜或柔性电路板基材聚酰亚胺具有良好的回弹性，不易弯折，也会增加拼缝，影响拼接显示的效果。\n\n发明内容\n\n[0003]本申请提供一种拼接显示屏，以解决现有技术中拼接显示屏拼接缝过大的问题，提高拼接显示屏的显示效果。\n\n[0004]本申请提供一种拼接显示屏，包括：\n\n[0005]电路板，所述电路板具有若干电路区域，每一电路区域包括一安装区域和一电连接区域，在所述电连接区域设置有若干第一金属部；\n\n[0006]若干显示面板，每一所述显示面板设置于所述电路板且位于所述安装区域，所述显示面板包括设置于所述显示面板的显示面的金属连接垫；以及\n\n[0007]若干第一金属线，所述金属连接垫通过第一金属线与所述第一金属部电连接。\n\n[0008]在本申请所提供的拼接显示屏中，所述拼接显示屏还包括若干胶黏部，所述胶黏部位于所述电路板的安装区域，所述胶黏部黏接于所述电路板和所述显示面板之间。\n\n[0009]在本申请所提供的拼接显示屏中，所述电路板还包括绑定区域，所述绑定区域位于所述电路板的侧边，所述绑定区域设置有若干第二金属部。\n\n[0010]在本申请所提供的拼接显示屏中，所述拼接显示屏还包括至少一个覆晶薄膜，所述覆晶薄膜绑定于所述绑定区域，且与所述第二金属部电连接。\n\n[0011]在本申请所提供的拼接显示屏中，所述拼接显示屏还包括封胶层，所述封胶层覆盖所述电路板、所述显示面板、所述第一金属部以及所述第一金属线。\n\n[0012]在本申请所提供的拼接显示屏中，所述每两相邻的所述显示面板之间的距离为7微米-50微米。\n\n[0013]在本申请所提供的拼接显示屏中，所述显示面板包括基板和发光二极管，所述发光二极管设置于所述基板上。\n\n[0014]在本申请所提供的拼接显示屏中，所述胶黏部的厚度为100微米-200微米。\n\n[0015]在本申请所提供的拼接显示屏中，所述第一金属部的厚度为0.2微米-0.5微米。\n\n[0016]在本申请所提供的拼接显示屏中，所述第一金属线的直径为1微米-49微米。\n\n[0017]本申请提供一种拼接显示屏，包括电路板、若干显示面板以及若干第一金属线，所述电路板具有若干电路区域，每一电路区域包括一安装区域和一电连接区域，在所述电连接区域设置有若干第一金属部，每一所述显示面板设置于所述电路板且位于所述安装区，所述显示面板包括设置于所述显示面板的显示面的金属连接垫，所述金属连接垫通过第一金属线与所述第一金属部电连接。通过第一金属线将显示面板上的金属连接垫与电连接电路板上的第一金属部电连接，减小拼接缝的缝隙。\n\n附图说明\n\n[0018]为了更清楚地说明本申请中的技术方案，下面将对实施方式描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施方式，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1为本申请提供的拼接显示屏的第一种结构剖视图。\n\n[0020]图2为本申请提供的拼接显示屏的第二种结构剖视图。\n\n[0021]图3为本申请提供的拼接显示屏的第三种结构剖视图。\n\n[0022]图4为本申请提供的拼接显示屏的第四种结构剖视图。\n\n具体实施方式\n\n[0023]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0024]请参阅图1，图1为本申请提供的拼接显示屏的第一种结构剖视图。本申请提供一种拼接显示屏10。所述拼接显示屏10包括电路板100、若干显示面板200以及若干第一金属线300。\n\n[0025]所述电路板100包括若干电路区域110和绑定区域120。每一电路区域110包括一安装区域111和一电连接区域112。在所述电连接区域112设置有若干第一金属部400。所述第一金属部400的厚度D为0.2微米-0.5微米。具体的，所述第一金属部400的厚度D可以为0.24微米、0.3微米和0.45微米等。所述绑定区域120位于所述电路板100的侧边。所述绑定区域120设置有若干第二金属部500。\n\n[0026]在一实施例中，所述拼接显示屏10还包括若干胶黏部600。所述胶黏部600位于所述电路板100的安装区域111。所述胶黏部600的厚度H为100微米-200微米。所述胶黏部600的厚度H可以为103微米、135微米、187微米或196微米等。\n\n[0027]每一所述显示面板200黏接于一所述胶黏部600上。所述显示面板200包括设置于所述显示面板200的显示面201的金属连接垫210。所述每两相邻的所述显示面板200之间的距离L为7微米-50微米。具体的，所述每两相邻的所述显示面板200之间的距离L可以为8微米、20微米、27微米、39微米或47微米等。所述显示面板200包括基板220和发光二极管230。所述发光二极管230阵列设置于所述基板220上。将显示面板用胶黏部粘接与电路板上，可以使得器件结构更加紧凑。\n\n[0028]在一实施例中，所述拼接显示屏10还包括至少一个覆晶薄膜700。所述覆晶薄膜700绑定于所述绑定区域120，且与所述第二金属部500电连接。\n\n[0029]通过所述第一金属线300将所述金属连接垫210与所述第一金属部400电连接。所述金属连接垫210通过所述第一金属线与所述第二金属部500电连接。所述第一金属线300的直径R为1微米-49微米。所述第一金属线300的直径R可以为8微米、27微米、31微米、42微米或45微米等。\n\n[0030]在一实施例中，所述拼接显示屏10还包括封胶层800。所述封胶层800覆盖所述电路板100、所述显示面板200、所述第一金属部400以及所述第一金属线300。\n\n[0031]在本申请中，通过第一金属线将第一金属部与显示面板上的金属连接垫电连接，将驱动讯号输入到面内，再由电路板上的覆晶薄膜引出，进而驱动显示面板正常工作，减小拼接时因覆晶薄膜的存在导致拼接缝过大现象，进而提高了拼接显示屏的显示效果；并且，第一金属线工艺可以兼容该分辨率范围内的位置精度。\n\n[0032]请参阅图2，图2为本申请提供的拼接显示屏的第二种结构剖视图。需要说明的是，图2与图1的不同之处在于：图2中的拼接显示屏10还包括第二金属线900、过孔101以及通孔102。所述过孔101位于所述安装区域111。所述通孔102位于所述绑定区域120。所述过孔101以及所述通孔102贯穿所述电路板100。所述覆晶薄膜700设置于所述电路板100的底部。所述第二金属线900设置于所述电路板100上以及所述过孔101中。所述第一金属部400通过所述第二金属线900与所述电路板100底部的覆晶薄膜700电连接。在所述绑定区域120，所述第二金属线900设置于所述电路板100上一所述所述通孔102中。所述第二金属部500通过所述第二金属线900与所述电路板100底部的覆晶薄膜700电连接。其他结构如图1所示，此处不再赘述。\n\n[0033]在本申请中，通过第一金属线将第一金属部与显示面板上的金属连接垫电连接，将驱动讯号输入到面内，再通过第二金属线将所述覆晶薄膜与所述第一金属部以及所述第二金属部电连接，进而驱动显示面板正常工作，避免电路过长造成的压降，并减小拼接时因覆晶薄膜的存在导致拼接缝过大现象，进而提高了拼接显示屏的显示效果以及节约成本；并且，第一金属线工艺可以兼容该分辨率范围内的位置精度。\n\n[0034]请参阅图3，图3为本申请提供的拼接显示屏的第三种结构剖视图。需要说明的是，图3与图2的不同之处在于：所述绑定区域120上不进行打孔设计，所述覆晶薄膜700不设置于所述电路板100的底部，直接将所述覆晶薄膜700与所述第二金属部500电连接。不进行打孔设计，进一步降低生产成本。\n\n[0035]请参阅图4，图4为本申请提供的拼接显示屏的第四种结构剖视图。需要说明的是，图4与图2的不同之处在于：所述第二金属线900直接填充于所述过孔101以及所述通孔102中，并电连接设置于所述电路板100底部的覆晶薄膜700。进一步避免了因电路过长造成的压降。并减小拼接时因覆晶薄膜的存在导致拼接缝过大现象，进而提高了拼接显示屏的显示效果以及节约成本；并且，第一金属线工艺可以兼容该分辨率范围内的位置精度。\n\n[0036]本申请提供一种拼接显示屏，所述拼接显示屏包括电路板、若干显示面板以及若干第一金属线，所述电路板具有若干电路区域，每一电路区域包括一安装区域和一电连接区域，在所述电连接区域设置有若干第一金属部，每一所述显示面板设置于所述电路板且位于所述安装区域，所述显示面板包括设置于所述显示面板的显示面的金属连接垫，所述金属连接垫通过第一金属线与所述第一金属部电连接。通过第一金属线将显示面板上的金属连接垫与电连接电路板上的第一金属部电连接，减小拼接缝的缝隙，进而提高拼接显示屏的显示效果。\n\n[0037]以上对本申请实施方式提供了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施方式的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种拼接显示屏。\n\n背景技术\n\n[0002]目前，传统显示屏均需通过覆晶薄膜或柔性电路板绑定的模组工艺将面板所需讯号输入到面内。因面板设计上通常需要先通过扇形区将面内信号线进行收束，将其集中到一小块绑定区域，再将覆晶薄膜或柔性电路板绑定在绑定区域，在印刷电路板和玻璃基板之间形成电性连接，从而使得键合区宽度通常较大。进一步的，键合区过大时，会影响显示屏的外观品位，若用于拼接屏用途时，会有明显的拼缝，进而影响拼接显示的效果。由于覆晶薄膜或柔性电路板基材聚酰亚胺具有良好的回弹性，不易弯折，也会增加拼缝，影响拼接显示的效果。\n\n发明内容\n\n[0003]本申请提供一种拼接显示屏，以解决现有技术中拼接显示屏拼接缝过大的问题，提高拼接显示屏的显示效果。\n\n[0004]本申请提供一种拼接显示屏，包括：\n\n[0005]电路板，所述电路板具有若干电路区域，每一电路区域包括一安装区域和一电连接区域，在所述电连接区域设置有若干第一金属部；\n\n[0006]若干显示面板，每一所述显示面板设置于所述电路板且位于所述安装区域，所述显示面板包括设置于所述显示面板的显示面的金属连接垫；以及\n\n[0007]若干第一金属线，所述金属连接垫通过第一金属线与所述第一金属部电连接。\n\n[0008]在本申请所提供的拼接显示屏中，所述拼接显示屏还包括若干胶黏部，所述胶黏部位于所述电路板的安装区域，所述胶黏部黏接于所述电路板和所述显示面板之间。\n\n[0009]在本申请所提供的拼接显示屏中，所述电路板还包括绑定区域，所述绑定区域位于所述电路板的侧边，所述绑定区域设置有若干第二金属部。\n\n[0010]在本申请所提供的拼接显示屏中，所述拼接显示屏还包括至少一个覆晶薄膜，所述覆晶薄膜绑定于所述绑定区域，且与所述第二金属部电连接。\n\n[0011]在本申请所提供的拼接显示屏中，所述拼接显示屏还包括封胶层，所述封胶层覆盖所述电路板、所述显示面板、所述第一金属部以及所述第一金属线。\n\n[0012]在本申请所提供的拼接显示屏中，所述每两相邻的所述显示面板之间的距离为7微米-50微米。\n\n[0013]在本申请所提供的拼接显示屏中，所述显示面板包括基板和发光二极管，所述发光二极管设置于所述基板上。\n\n[0014]在本申请所提供的拼接显示屏中，所述胶黏部的厚度为100微米-200微米。\n\n[0015]在本申请所提供的拼接显示屏中，所述第一金属部的厚度为0.2微米-0.5微米。\n\n[0016]在本申请所提供的拼接显示屏中，所述第一金属线的直径为1微米-49微米。\n\n[0017]本申请提供一种拼接显示屏，包括电路板、若干显示面板以及若干第一金属线，所述电路板具有若干电路区域，每一电路区域包括一安装区域和一电连接区域，在所述电连接区域设置有若干第一金属部，每一所述显示面板设置于所述电路板且位于所述安装区，所述显示面板包括设置于所述显示面板的显示面的金属连接垫，所述金属连接垫通过第一金属线与所述第一金属部电连接。通过第一金属线将显示面板上的金属连接垫与电连接电路板上的第一金属部电连接，减小拼接缝的缝隙。\n\n附图说明\n\n[0018]为了更清楚地说明本申请中的技术方案，下面将对实施方式描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施方式，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1为本申请提供的拼接显示屏的第一种结构剖视图。\n\n[0020]图2为本申请提供的拼接显示屏的第二种结构剖视图。\n\n[0021]图3为本申请提供的拼接显示屏的第三种结构剖视图。\n\n[0022]图4为本申请提供的拼接显示屏的第四种结构剖视图。\n\n具体实施方式\n\n[0023]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0024]请参阅图1，图1为本申请提供的拼接显示屏的第一种结构剖视图。本申请提供一种拼接显示屏10。所述拼接显示屏10包括电路板100、若干显示面板200以及若干第一金属线300。\n\n[0025]所述电路板100包括若干电路区域110和绑定区域120。每一电路区域110包括一安装区域111和一电连接区域112。在所述电连接区域112设置有若干第一金属部400。所述第一金属部400的厚度D为0.2微米-0.5微米。具体的，所述第一金属部400的厚度D可以为0.24微米、0.3微米和0.45微米等。所述绑定区域120位于所述电路板100的侧边。所述绑定区域120设置有若干第二金属部500。\n\n[0026]在一实施例中，所述拼接显示屏10还包括若干胶黏部600。所述胶黏部600位于所述电路板100的安装区域111。所述胶黏部600的厚度H为100微米-200微米。所述胶黏部600的厚度H可以为103微米、135微米、187微米或196微米等。\n\n[0027]每一所述显示面板200黏接于一所述胶黏部600上。所述显示面板200包括设置于所述显示面板200的显示面201的金属连接垫210。所述每两相邻的所述显示面板200之间的距离L为7微米-50微米。具体的，所述每两相邻的所述显示面板200之间的距离L可以为8微米、20微米、27微米、39微米或47微米等。所述显示面板200包括基板220和发光二极管230。所述发光二极管230阵列设置于所述基板220上。将显示面板用胶黏部粘接与电路板上，可以使得器件结构更加紧凑。\n\n[0028]在一实施例中，所述拼接显示屏10还包括至少一个覆晶薄膜700。所述覆晶薄膜700绑定于所述绑定区域120，且与所述第二金属部500电连接。\n\n[0029]通过所述第一金属线300将所述金属连接垫210与所述第一金属部400电连接。所述金属连接垫210通过所述第一金属线与所述第二金属部500电连接。所述第一金属线300的直径R为1微米-49微米。所述第一金属线300的直径R可以为8微米、27微米、31微米、42微米或45微米等。\n\n[0030]在一实施例中，所述拼接显示屏10还包括封胶层800。所述封胶层800覆盖所述电路板100、所述显示面板200、所述第一金属部400以及所述第一金属线300。\n\n[0031]在本申请中，通过第一金属线将第一金属部与显示面板上的金属连接垫电连接，将驱动讯号输入到面内，再由电路板上的覆晶薄膜引出，进而驱动显示面板正常工作，减小拼接时因覆晶薄膜的存在导致拼接缝过大现象，进而提高了拼接显示屏的显示效果；并且，第一金属线工艺可以兼容该分辨率范围内的位置精度。\n\n[0032]请参阅图2，图2为本申请提供的拼接显示屏的第二种结构剖视图。需要说明的是，图2与图1的不同之处在于：图2中的拼接显示屏10还包括第二金属线900、过孔101以及通孔102。所述过孔101位于所述安装区域111。所述通孔102位于所述绑定区域120。所述过孔101以及所述通孔102贯穿所述电路板100。所述覆晶薄膜700设置于所述电路板100的底部。所述第二金属线900设置于所述电路板100上以及所述过孔101中。所述第一金属部400通过所述第二金属线900与所述电路板100底部的覆晶薄膜700电连接。在所述绑定区域120，所述第二金属线900设置于所述电路板100上一所述所述通孔102中。所述第二金属部500通过所述第二金属线900与所述电路板100底部的覆晶薄膜700电连接。其他结构如图1所示，此处不再赘述。\n\n[0033]在本申请中，通过第一金属线将第一金属部与显示面板上的金属连接垫电连接，将驱动讯号输入到面内，再通过第二金属线将所述覆晶薄膜与所述第一金属部以及所述第二金属部电连接，进而驱动显示面板正常工作，避免电路过长造成的压降，并减小拼接时因覆晶薄膜的存在导致拼接缝过大现象，进而提高了拼接显示屏的显示效果以及节约成本；并且，第一金属线工艺可以兼容该分辨率范围内的位置精度。\n\n[0034]请参阅图3，图3为本申请提供的拼接显示屏的第三种结构剖视图。需要说明的是，图3与图2的不同之处在于：所述绑定区域120上不进行打孔设计，所述覆晶薄膜700不设置于所述电路板100的底部，直接将所述覆晶薄膜700与所述第二金属部500电连接。不进行打孔设计，进一步降低生产成本。\n\n[0035]请参阅图4，图4为本申请提供的拼接显示屏的第四种结构剖视图。需要说明的是，图4与图2的不同之处在于：所述第二金属线900直接填充于所述过孔101以及所述通孔102中，并电连接设置于所述电路板100底部的覆晶薄膜700。进一步避免了因电路过长造成的压降。并减小拼接时因覆晶薄膜的存在导致拼接缝过大现象，进而提高了拼接显示屏的显示效果以及节约成本；并且，第一金属线工艺可以兼容该分辨率范围内的位置精度。\n\n[0036]本申请提供一种拼接显示屏，所述拼接显示屏包括电路板、若干显示面板以及若干第一金属线，所述电路板具有若干电路区域，每一电路区域包括一安装区域和一电连接区域，在所述电连接区域设置有若干第一金属部，每一所述显示面板设置于所述电路板且位于所述安装区域，所述显示面板包括设置于所述显示面板的显示面的金属连接垫，所述金属连接垫通过第一金属线与所述第一金属部电连接。通过第一金属线将显示面板上的金属连接垫与电连接电路板上的第一金属部电连接，减小拼接缝的缝隙，进而提高拼接显示屏的显示效果。\n\n[0037]以上对本申请实施方式提供了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施方式的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10847, 23901, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及微发光二极管显示器制造技术领域，具体涉及一种微发光二极管显示基板及其制作方法。\n\n背景技术\n\n[0002]在显示领域里，如液晶显示器(Liquid Crystal Display，LCD)、有机发光半导体(Organic Light-Emitting Diode，OLED)、发光二极管(Light Emitting Diode，简称LED)屏幕，单一屏幕体越大，制作成本越高(价格/面积)，因此一般的超大屏幕通常采用若干块小的屏幕拼接一起形成，以降低单位面积的成本。由于一般的屏幕都会带有边框，这会导致拼接屏的显示区域带有若干条非显示暗区，降低显示品质。如何降低拼接屏的拼接缝的大小，已经成为业界热门的研究对象。\n\n发明内容\n\n[0003]本发明实施例提供一种微发光二极管(Micro LED)显示基板及其制作方法，可以最大限度的降低高解析度屏幕的拼接缝问题，并简化薄膜晶体管(Thin Film Transistor，TFT)基板显示面、底面电路的结构。\n\n[0004]第一方面，本发明实施例提供一种微发光二极管显示基板，包括：\n\n[0005]一衬底基板，具有顶面与底面，\n\n[0006]薄膜晶体管，形成于所述衬底基板的顶面；\n\n[0007]微发光二极管，设置于所述衬底基板的顶面、且与所述薄膜晶体管连接；以及\n\n[0008]第一金属膜层，设置于所述衬底基板的底面，且至少形成一扇出电路图案和一侧印焊盘；\n\n[0009]其中，所述第一金属膜层的扇出电路图案与所述侧印焊盘连接，所述侧印焊盘通过设置在所述衬底基板旁边的侧面导线与所述薄膜晶体管连接。\n\n[0010]在一些实施例中，所述薄膜晶体管包括第二源极/像素电极、公共阴极、漏极、覆盖所述漏极的第二钝化层和形成在所述第二钝化层之上的黑色矩阵层；其中：所述第二源极/像素电极和所述公共阴极分别与所述微发光二极管连接。在一些实施例中，所述钝化层与所述黑色矩阵层共用一道光罩制程进行自对准图案化形成。\n\n[0011]在一些实施例中，所述薄膜晶体管还包括：半导体膜层和遮光层；所述第二源极/像素电极分别与所述微发光二极管、所述半导体膜层和所述遮光层相连接；所述漏极与所述半导体膜层连接。\n\n[0012]在一些实施例中，所述薄膜晶体管还包括：\n\n[0013]覆盖所述遮光层的绝缘层；\n\n[0014]形成在所述半导体膜层之上的第二栅极绝缘层；\n\n[0015]形成在所述第二栅极绝缘层之上的第二栅极金属层；以及\n\n[0016]至少覆盖所述绝缘层、半导体膜层、第二栅极绝缘层和第二栅极金属层的中间介电层；其中：\n\n[0017]所述遮光层形成在所述衬底基板的顶面上；\n\n[0018]所述半导体膜层形成在所述绝缘层之上；\n\n[0019]所述第二源极/像素电极的第一部分形成于所述中间介电层之上并与所述微发光二极管连接、第二部分贯穿所述中间介电层和所述绝缘层与所述遮光层连接、以及第三部分贯穿所述中间介电层与所述半导体膜层连接；\n\n[0020]所述漏极的一部分形成于所述中间介电层之上并由所述第二钝化层覆盖、另一部分贯穿所述中间介电层与所述半导体膜层连接。\n\n[0021]在一些实施例中，所述薄膜晶体管还包括第一源极；所述第一源极位于所述衬底基板边缘处、并形成在所述中间介电层之上；所述第一源极通过设置在所述衬底基板旁边的侧面导线与所述第一金属膜层的侧印焊盘连接。\n\n[0022]在一些实施例中，所述薄膜晶体管还包括第一栅极绝缘层和第一栅极金属层；所述第一栅极绝缘层位于所述衬底基板边缘处、并形成在所述绝缘层之上、所述半导体膜层之外；所述第一栅极金属层形成在所述第一栅极绝缘层之上；所述第一栅极金属层通过设置在所述衬底基板旁边的侧面导线与所述第一金属膜层的侧印焊盘连接。\n\n[0023]第二方面，本发明还提供了一种上述微发光二极管显示基板的制作方法，包括以下步骤：\n\n[0024]步骤A、在所述衬底基板的底面制备第一金属膜层，并形成至少一扇出电路图案和一侧印焊盘，并使所述扇出电路与所述侧印焊盘相连接；\n\n[0025]步骤B、在所述衬底基板的顶面制备薄膜晶体管；\n\n[0026]步骤C、将设置在所述衬底基板顶面的微发光二极管连接到所述薄膜晶体管上；以及\n\n[0027]步骤D、将薄膜晶体管通过设置在所述衬底基板旁边的侧面导线与所述第一金属膜层的侧印焊盘相连接。\n\n[0028]在一些实施例中，所述步骤B包括：\n\n[0029]步骤b6、形成源漏极金属电极层，并经图案化至少形成漏极，第二源极/像素电极和公共阴极；以及\n\n[0030]步骤b7、在所述漏极之上共用一道光罩制程进行自对准图案化形成第二钝化层和黑色矩阵层，使所述第二钝化层覆盖所述漏极，并使所述黑色矩阵层覆盖所述第二钝化层表面；\n\n[0031]所述步骤C包括：将微发光二极管绑定在所述第二源极/像素电极和公共阴极上。\n\n[0032]在一些实施例中，所述步骤B还包括：\n\n[0033]步骤b1、在所述衬底基板的顶面形成遮光层；\n\n[0034]步骤b2、在所述遮光层之上和所述衬底基板的顶面形成绝缘层；\n\n[0035]步骤b3、在所述绝缘层之上形成半导体膜层；\n\n[0036]步骤b4、在所述半导体膜层之上形成第二栅极绝缘层，并在所述第二栅极绝缘层之上形成第二栅极金属层；以及\n\n[0037]步骤b5、形成中间介电层，使其至少覆盖所述绝缘层、半导体膜层、第二栅极绝缘层和第二栅极金属层；\n\n[0038]其中：在所述步骤b6中，所述源漏极金属电极层形成在所述中间介电层之上；所述第二源极/像素电极的第一部分位于介电层之上并与所述微发光二极管连接、第二部分贯穿所述中间介电层和所述绝缘层与所述遮光层连接、第三部分通过贯穿所述中间介电层与所述半导体膜层连接；所述漏极的一部分形成于所述中间介电层之上，另一部分贯穿所述中间介电层与所述半导体膜层连接。\n\n[0039]在一些实施例中，在所述步骤b6中，所述图案化还形成有第一源极，所述第一源极形成于所述中间介电层之上、且位于所述衬底基板边缘处；所述步骤D是将所述第一源极通过设置在所述衬底基板旁边的侧面导线与所述第一金属膜层的侧印焊盘连接；\n\n[0040]或者，在所述步骤b4中，还包括在所述绝缘层上方、所述半导体膜层之外、且位于所述衬底基板边缘处形成第一栅极绝缘层，以及在所述第一栅极绝缘层上方形成第一栅极金属层；在步骤b5中，所述中间介电层还覆盖部分所述第一栅极绝缘层和部分所述第一栅极金属层，并使所述第一栅极金属层的表面至少一部分是暴露的，用于与所述侧面导线连接；所述步骤D是将所述第一栅极金属层通过设置在所述衬底基板旁边的侧面导线与所述第一金属膜层的侧印焊盘连接。\n\n[0041]与现有技术相比，本发明将扇出(fanout)电路制作在衬底基板的底面，扇出电路可以通过绑定焊盘(bonding pad)与覆晶薄膜(chip on film，COF)和驱动芯片(IC)连接，底面还可以连接静电防护电路等其他电路，而衬底基板的顶面制作有TFT和Micro LED用于显示，衬底基板底面的扇出电路与衬底基板顶面的显示像素(即TFT和Micro LED)通过衬底基板旁边的侧面导线(side wiring)和侧印焊盘(side wiring pad)连接，使得当微发光二极管显示基板和边框组装后位于衬底基板顶面的显示像素区域可以最大程度的靠近边框，使得显示像素区域与边框之间的拼接缝宽度达到一个像素单元的大小，在宏观上无明显的拼接痕迹，达到无边框效果，因此，在拼接屏上使用此技术，可以使得拼接屏之间无明显的拼接无显示区域，提升拼接屏的现实品质。\n\n[0042]此外，现有技术中TFT结构一般包括半导体层，栅极绝缘层，栅极，中间介电层，源漏极金属电极层，钝化层和氧化铟锡(ITO)像素电极层，而通常Micro LED一般绑定在TFT的ITO像素电极层上，而钝化层通常需要单独制程来开孔，ITO像素电极层也需要单独制程来制作。而本发明方案中将Micro LED直接绑定在TFT的源漏极金属电极层上(即第二源极/像素电极和公共阴极)，不需要采用单独的制程来给钝化层开孔，也不需要采用单独制程制作ITO像素电极层，只需要将钝化层与黑色矩阵层共用一道光罩制程以自对准方式完成图案化即可，即：省略了钝化层单独开孔和制备ITO像素电极层的额外制程，这样使得显示基板的顶面只需要7道制程即可制作完成TFT，简化了显示基板TFT面的结构和制作过程，有利于提升产品的良率及降低制造成本。\n\n附图说明\n\n[0043]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0044]图1至图15为本发明所述微发光二极管显示基板一实施方式的制作过程示意图。\n\n[0045]图16至图24为本发明所述微发光二极管显示基板另一实施方式的制作过程示意图。\n\n具体实施方式\n\n[0046]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0047]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0048]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0049]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0050]下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0051]具体的，请参阅图1至24，图1至图15提供了本发明所述微发光二极管显示基板一实施方式的制作过程示意图；图16至图24提供了本发明所述微发光二极管显示基板另一实施方式的制作过程示意图，其中图15示出了本发明所述微发光二极管显示基板一实施方式的结构示意图；图24示出了本发明所述微发光二极管显示基板另一实施方式的结构示意图；图中A表示衬底基板100的顶面，B表示衬底基板100的底面。\n\n[0052]请参阅图15和图24，本发明实施例提供了一种微发光二极管显示基板，包括一衬底基板100，薄膜晶体管200，微发光二极管300，及第一金属膜层400。\n\n[0053]所述衬底基板100，具有顶面与底面。所述衬底基板100可以是玻璃基板。\n\n[0054]所述薄膜晶体管200，形成于所述衬底基板100的顶面(即A面)。\n\n[0055]所述微发光二极管300，设置于所述衬底基板100的顶面、且与所述薄膜晶体管200连接。\n\n[0056]所述第一金属膜层400，设置于所述衬底基板100的底面(即B面)，且至少形成一扇出电路图案401和一侧印焊盘403。其中，所述第一金属膜层400的扇出电路图案401与所述侧印焊盘403连接，所述侧印焊盘403通过设置在所述衬底基板100旁边的侧面导线500与所述薄膜晶体管200连接。\n\n[0057]所述侧面导线500通过印刷或镀膜后图案化的方式形成。\n\n[0058]本实施例在A面形成的薄膜晶体管200与微发光二极管300连接，用于控制发光二极管300的亮度变化，A面作为显示基板的显示面。将A面形成的薄膜晶体管200通过设置在衬底基板100旁边的侧面导线500及侧印焊盘403与B面的扇出电路图案401电连接，这样的结构使得原来位于衬底基板100顶面的扇出电路可以移动到衬底基板100的底面，使得当微发光二极管300显示基板和边框组装后，位于衬底基板100顶面的显示像素区域可以最大程度的靠近边框，使得显示像素区域与边框之间的拼接缝达到一个像素单元的大小，在宏观上无明显的拼接痕迹，达到无边框效果，因此，在拼接屏上使用此技术，可以使得拼接屏之间无明显的拼接无显示区域，提升拼接屏的现实品质。\n\n[0059]在一些实施例中，B面还可以形成其他电路，如绑定焊盘402、静电防护电路等。例如，如图15和图24所示，所述第一金属膜层400还形成有一绑定焊盘402，所述绑定焊盘402与所述扇出电路图案401相连接。\n\n[0060]所述绑定焊盘402还可以与覆晶薄膜700和驱动芯片800连接。例如，所述微发光二极管显示基板还包括：一覆晶薄膜700及一驱动芯片800；所述覆晶薄膜700设置于所述衬底基板100的底面、且与所述绑定焊盘402连接；所述驱动芯片800，设置于所述衬底基板100的底面、且与所述覆晶薄膜700连接。其中，所述覆晶薄膜700可以通过导电胶1400连接至所述绑定焊盘402上。\n\n[0061]请参考图15和图24，在一些实施例中，所述薄膜晶体管200包括第二源极/像素电极211、公共阴极212、漏极210、覆盖所述漏极210的第二钝化层213和形成在所述第二钝化层213之上的黑色矩阵层214。其中：所述第二源极/像素电极211和所述公共阴极212分别与所述微发光二极管300连接。所述钝化层213与所述黑色矩阵层214可以共用一道光罩制程进行自对准图案化形成。所述钝化层213和所述黑色矩阵层214一起作为薄膜晶体管200顶部的遮光层及水氧保护层。\n\n[0062]请参考图15和图24，在一些实施例中，所述薄膜晶体管200还包括：半导体膜层203和遮光层201；所述第二源极/像素电极211分别与所述微发光二极管300、所述半导体膜层203、以及所述遮光层201相连接；所述漏极210与所述半导体膜203层连接。\n\n[0063]请参考图15和图24，在一些实施例中，所述薄膜晶体管200还包括：\n\n[0064]覆盖所述遮光层201的绝缘层202；\n\n[0065]形成在所述半导体膜层203之上的第二栅极绝缘层206；\n\n[0066]形成在所述第二栅极绝缘层206之上的第二栅极金属层207；以及\n\n[0067]至少覆盖所述绝缘层202、半导体膜层203、第二栅极绝缘层206和第二栅极金属层207的中间介电层208；其中：\n\n[0068]所述遮光层201形成在所述衬底基板100的顶面上；\n\n[0069]所述半导体膜层203形成在所述绝缘层202之上；\n\n[0070]所述第二源极/像素电极211的第一部分形成于所述中间介电层208之上并与所述微发光二极管300连接、第二部分贯穿所述中间介电层208和所述绝缘层202与所述遮光层201连接、以及第三部分贯穿所述中间介电层208与所述半导体膜层203连接；\n\n[0071]所述漏极210的一部分形成于所述中间介电层208之上并由所述第二钝化层213覆盖、另一部分贯穿所述中间介电层208与所述半导体膜层203连接。\n\n[0072]本实施例中，实现第二源极/像素电极211与所述遮光层201连接、第二源极/像素电极211与半导体膜层203连接、以及漏极210与半导体膜层203连接的方法，例如：在所述绝缘层202和所述中间介电层208上开设第一通孔2081，使得第一通孔2081贯穿所述绝缘层202和所述中间介电层208并通向所述遮光层201；并在所述中间介电层208上开设贯穿所述中间介电层208并且通向所述半导体膜层203的第二通孔2082和第三通孔2083；所述第二源极/像素电极211的第二部分通过第一通孔与所述遮光层201相连接，所述第二源极/像素电极211的第三部分通过第二通孔2082与所述半导体膜层203相连接。所述漏极210通过第三通孔2083与所述半导体膜层203相连接。\n\n[0073]请参考图15，在一些实施例中，所述薄膜晶体管200还包括第一源极209；所述第一源极209位于所述衬底基板100边缘处、并形成在所述中间介电层208之上；所述第一源极209通过设置在所述衬底基板100旁边的侧面导线500与所述第一金属膜层400的侧印焊盘403连接。其中所述第一源极209的表面至少一部分是暴露的，以用于连接侧面导线500。\n\n[0074]或者，请参考图24，在另一些实施例中，所述薄膜晶体管200还包括第一栅极绝缘层204和第一栅极金属层205；所述第一栅极绝缘层204位于所述衬底基板100边缘处、并形成在所述绝缘层202之上、所述半导体膜层203之外；所述第一栅极金属层205形成在所述第一栅极绝缘层204之上；所述第一栅极金属层205通过设置在所述衬底基板100旁边的侧面导线500与所述第一金属膜层400的侧印焊盘403连接。本实施例中，第一栅极绝缘层204可以与第二栅极绝缘层206同时制作形成，第一栅极金属层205可以与第二栅极金属层207同时制作形成。此外，所述中间介电层208可以覆盖部分所述第一栅极绝缘层204和部分所述第一栅极金属层205，例如图24所示的覆盖所述第一栅极绝缘层204的侧面以及所述第一栅极金属层205侧面和部分上表面，同时需要使第一栅极金属层205的表面至少一部分是暴露的以用于与所述侧面导线500连接。\n\n[0075]请参考图1至图24所示，本实施例还提供了一种所述微发光二极管显示基板的制作方法，包括以下步骤：\n\n[0076]步骤A、在所述衬底基板100的底面制备第一金属膜层400，并形成至少一扇出电路图案401和一侧印焊盘403，并使所述扇出电路401与所述侧印焊盘403相连接；\n\n[0077]步骤B、在所述衬底基板100的顶面制备薄膜晶体管200；\n\n[0078]步骤C、将设置在所述衬底基板100顶面的微发光二极管300连接到所述薄膜晶体管200上；以及\n\n[0079]步骤D、将薄膜晶体管200通过设置在所述衬底基板100旁边的侧面导线500与所述第一金属膜层400的侧印焊盘403连接。\n\n[0080]所述侧面导线500采用印刷或镀膜图案化的方式形成。\n\n[0081]本实施例方法在A面形成的薄膜晶体管200与微发光二极管300连接，用于控制发光二极管300的亮度变化，A面作为显示基板的显示面。将A面形成的薄膜晶体管200通过设置在衬底基板100旁边的侧面导线500与B面的侧印焊盘403电连接，进而实现A面薄膜晶体管200与B面的扇出电路图案401电连接，这样的结构使得原来位于衬底基板100顶面的电路可以移动到衬底基板100的底面，使得位于衬底基板100顶面的显示像素区域可以最大程度的靠近显示边框，使得拼接缝达到一个像素单元水平，在宏观上无明显的拼接痕迹，达到无边框效果，因此，在拼接屏上使用此技术，可以使得拼接屏之间无明显的拼接无显示区域，提升拼接屏的现实品质。\n\n[0082]在一实施例中，请参考图15和图24所示，B面还可以形成其他电路，如绑定焊盘402、静电防护电路等。例如，所述步骤A中，所述第一金属膜层400还形成有一绑定焊盘402，并使绑定焊盘402与所述扇出电路图案401连接。\n\n[0083]所述绑定焊盘402还可以连接覆晶薄膜700和驱动芯片800连接。例如，所述微发光二极管显示基板的制作方法还包括：将一覆晶薄膜700设置于所述衬底基板100的底面、且与所述绑定焊盘402连接；及将一驱动芯片800设置于所述衬底基板100的底面、且与所述覆晶薄膜700连接。其中，所述覆晶薄膜700可以通过导电胶1400连接至所述绑定焊盘402上。\n\n[0084]请参考图1至图15、图16至图24，在一些实施例中，所述步骤B包括：\n\n[0085]步骤b6、形成源漏极210金属电极层，并经图案化至少形成漏极210，第二源极/像素电极211和公共阴极212；以及\n\n[0086]步骤b7、在所述漏极210之上共用一道光罩制程进行自对准图案化形成第二钝化层213和黑色矩阵层214，使所述第二钝化层213覆盖所述漏极210，并使所述黑色矩阵层214覆盖所述第二钝化层213表面；其中，所述钝化层213和所述黑色矩阵层214一起作为薄膜晶体管200顶部的遮光层201及水氧保护层；\n\n[0087]所述步骤C包括：将微发光二极管300绑定在所述第二源极/像素电极211和公共阴极212上。\n\n[0088]现有技术中薄膜晶体管结构一般包括半导体层，栅极绝缘层，栅极，中间介电层，源漏极属电极层，钝化层和ITO像素电极层，而通常微发光二极管一般绑定在薄膜晶体管的ITO像素电极层上，而钝化层通常需要单独制程来开孔，ITO像素电极层也需要单独制程来制备。而本发明方案中将微发光二极管300绑定在薄膜晶体管的源漏极金属电极层上(即第二源极/像素电极211和公共阴极212)，可以省略钝化层单独开孔和制备ITO像素电极层的额外制程，即：本发明不需要采用单独的制程来给钝化层开孔，也不需要采用单独制程制备ITO像素电极层，只需要将钝化层与黑色矩阵层214共用一道光罩制程以自对准方式完成图案化即可，这样使得显示基板的顶面只需要7道制程即可制备完成薄膜晶体管200，简化了显示基板薄膜晶体管面的结构和制作过程，有利于提升产品的良率及降低制造成本。\n\n[0089]请参考图1至图15、图16至图24，在一些实施例中，所述步骤B还包括：\n\n[0090]步骤b1、在所述衬底基板100的顶面形成遮光层201；\n\n[0091]步骤b2、在所述遮光层201之上和所述衬底基板100的顶面形成绝缘层202；\n\n[0092]步骤b3、在所述绝缘层202之上形成半导体膜层203；\n\n[0093]步骤b4、在所述半导体膜层203之上形成第二栅极绝缘层206，并在所述第二栅极绝缘层206之上形成第二栅极金属层207；以及\n\n[0094]步骤b5、形成中间介电层208，使其至少覆盖所述绝缘层202、半导体膜层203、第二栅极绝缘层206和第二栅极金属层207；\n\n[0095]其中：在所述步骤b6中，所述源漏极210金属电极层形成在所述中间介电层208之上；所述第二源极/像素电极211的第一部分位于介电层之上并与所述微发光二极管300连接、第二部分贯穿所述中间介电层208和所述绝缘层202与所述遮光层201连接、第三部分通过贯穿所述中间介电层208与所述半导体膜层203连接；所述漏极210的一部分形成于所述中间介电层208之上，另一部分贯穿所述中间介电层208与所述半导体膜层203连接。\n\n[0096]本实施例中，实现第二源极/像素电极211与所述遮光层201连接、第二源极/像素电极211与半导体膜层203连接、以及漏极210与半导体膜层203连接的方法，例如：在所述绝缘层202和所述中间介电层208上开设第一通孔2081，使得第一通孔2081贯穿所述绝缘层202和所述中间介电层208并通向所述遮光层201；并在所述中间介电层208上开设贯穿所述中间介电层208并且通向所述半导体膜层203的第二通孔2082和第三通孔2083；所述第二源极/像素电极211的第二部分通过第一通孔2081与所述遮光层201相连接，所述第二源极/像素电极211的第三部分通过第二通孔2082与所述半导体膜层203相连接。所述漏极210通过第三通孔2083与所述半导体膜层203相连接。\n\n[0097]请参考图1至图15，在一些实施例中，在所述步骤b6中，所述图案化还形成有第一源极209，所述第一源极209形成于所述中间介电层208之上、且位于所述衬底基板100边缘处；所述步骤D是将所述第一源极209通过设置在所述衬底基板100旁边的侧面导线500与所述第一金属膜层400的侧印焊盘403连接。所述第一源极209的表面至少一部分是暴露的，以用于连接侧面导线500。\n\n[0098]请参考图16至图24，在一些实施例中，在所述步骤b4中，还包括在所述绝缘层202上方、所述半导体膜层203之外、且位于所述衬底基板100边缘处形成第一栅极绝缘层204，以及在所述第一栅极绝缘层204上方形成第一栅极金属层205；在步骤b5中，所述中间介电层208还覆盖部分所述第一栅极绝缘层204和部分所述第一栅极金属层205，并使所述第一栅极金属层205的表面至少一部分是暴露的，用于与所述侧面导线500连接；所述步骤D是将所述第一栅极金属层205通过设置在所述衬底基板100旁边的侧面导线500与所述第一金属膜层400的侧印焊盘403连接。\n\n[0099]本实施例中，第一栅极绝缘层204可以与第二栅极绝缘层206同时制作形成，第一栅极金属层205可以与第二栅极金属层207同时制作形成。此外，所述中间介电层208可以覆盖部分所述第一栅极绝缘层204和部分所述第一栅极金属层205，例如图24所示的覆盖所述第一栅极绝缘层204的侧面以及所述第一栅极金属层205侧面和部分上表面，同时需要使第一栅极金属层205的表面至少一部分是暴露的以用于与所述侧面导线500连接。\n\n[0100]以下以本发明所述微发光二极管300显示基板的其中两种具体制作方法为例进行详细说明。其中图1至图15示出了本发明一实施方式微发光二极管显示基板的制作过程，图16至图24示出了本发明另一实施例微发光二极管显示基板的制作过程，图中A表示衬底基板100的顶面，B表示衬底基板100的底面。\n\n[0101]请参考图1至图15所示，一种微发光二极管显示基板的具体制作方法，具体步骤如下：\n\n[0102](1)请参考图1，在衬底基板100的底面(即图中B面)镀一层金属膜形成第一金属膜层400，并对第一金属膜层400图案化形成至少一扇出电路图案401、一绑定焊盘402及一侧印焊盘403。其中：位于衬底基板100边缘、且靠近侧面导线500一端为侧印焊盘403，用于与侧面导线500连接；所述第一金属膜层400的另一端为绑定焊盘402，用于连接覆晶薄膜700和驱动芯片800；所述第一金属膜层400上侧印焊盘403与绑定焊盘402之间的为扇出电路图案401。侧印焊盘403与扇出电路图案401连接，扇出电路图案401与绑定焊盘402连接。为了方便第一金属膜层400与侧面导线500连接，第一金属膜层400可以设置在靠近侧面导线500的一侧；衬底基板100可以采用如玻璃基板等；膜层材料可以采用如Mo、Mo/Al/Mo、Mo/Cu或Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr或CuNb等。\n\n[0103](2)请参考图2，在衬底基板100和第一金属膜层400的上方镀膜，使其覆盖在衬底基板100和第一金属膜层400的上方，并进行图案化使第一金属膜层400两端的侧印焊盘403和绑定焊盘402全部或部分暴露出来，形成第一钝化层600。其中：全部或部分暴露侧印焊盘403以方便与侧面导线500连接；全部或部分暴露绑定焊盘402以方便与连接覆晶薄膜700和驱动芯片800。第一钝化层600的膜层材料可以采用如SiNx或SiOx等。\n\n[0104](3)请参考图3，在第一钝化层600和第一金属膜层400的上方形成第一底面保护膜层900，用于防止制作过程中对衬底基板100底面结构造成破坏，起到保护衬底基板100底面结构的作用。其中：第一底面保护膜层900的材料可以采用如SiNx或SiOx等。\n\n[0105](4)请参考图4，对衬底基板100进行翻转，使衬底基板100的底面位于上方。\n\n[0106](5)请参考图5，在衬底基板100的顶面上镀膜，并对其图案化，形成遮光层201。其中：遮光层201材料可以采用如Mo、Mo/Al/Mo、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr或CuNb等。\n\n[0107](6)请参考图6，在衬底基板100和遮光层201的上方镀膜，使其覆盖衬底基板100和遮光层201，形成绝缘层202；在绝缘层202的上方镀膜，并对其图案化，获得半导体膜层203。其中：遮光层201的膜层材料可以采用如SiOx、SiNx、SiNx/SiOx或SiNOx等。半导体膜层203的材料如IGZO，IGTO，IGZO，IGO，IZO或AIZO等。\n\n[0108](7)请参考图7，在半导体膜层203之上镀膜，制备第二栅极绝缘层206和第二栅极金属层207，例如：在半导体膜层203之上镀膜，形成一栅极绝缘膜层，并在栅极绝缘膜层上镀一栅极金属膜层，然后对所述栅极金属膜层进行图案化处理，得到第二栅极金属层207，然后利用第二栅极金属层207自对准图案化所述栅极金属膜层，得到第二栅极绝缘层206。其中，栅极绝缘膜层材料可以采用如SiOx，SiNx，Al2O3/SiNx/SiOx或SiOx/SiNx/SiOx等；栅极金属膜层材料可以采用如Mo、Mo/Al、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr或CuNb等。\n\n[0109](8)请参考图8，在绝缘层202、半导体膜层203、第二栅极绝缘层206和第二栅极金属层207的上方镀膜，使其覆盖绝缘层202、半导体膜层203、第二栅极绝缘层206和第二栅极金属层207，并对其图案化，形成中间介电层208，并在中间介电层208上形成三个贯穿通孔，分别为第一通孔2081、第二通孔2082和第三通孔2083；其中第一通孔2081贯穿中间介电层208和绝缘层202并通向遮光层201，第二通孔2082和第三通孔2083均贯穿中间介电层208并通向半导体膜层203。其中：三个贯穿通孔可以通过蚀刻形成。中间介电层208的膜层材料可以采用如SiOx，SiNx或SiNOx等。\n\n[0110](9)请参考图9，在中间介电层208的上方镀膜，形成源漏极210金属电极层，并对其图案化处理，形成第一源极209、漏极210、第二源极/像素电极211和公共阴极212。其中：第一源极209位于中间介电层208的上方，其表面是暴露的，以用于与侧面导线500相连；漏极210通过第三通孔2083与半导体膜层203相连；第二源极/像素电极211位于中间介电层208上方的部分命名为第一部分，用于与微发光二极管300连接，第二源极/像素电极211的第二部分通过第一通孔2081与遮光层201相连，第二源极/像素电极211的第三部分通过第二通孔2082与半导体膜层203相连；公共阴极212位于中间介电层208的上方，用于与微发光二极管300连接；漏极210通过第三通孔2083与半导体膜层203相连。源漏极210金属电极层的膜层材料可以采用如Mo、Mo/Al、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr或CuNb等。\n\n[0111](10)请参考图10，在所述漏极210之上共用一道光罩制程进行自对准图案化形成第二钝化层213和黑色矩阵214，使所述第二钝化层213覆盖所述漏极210，并使所述黑色矩阵层214覆盖所述第二钝化层213，至此完成薄膜晶体管200的制作。例如：在漏极210上镀膜，形成第二钝化层213的膜层，然后在第二钝化层213的膜层之上镀膜形成黑色矩阵层214的膜层，对黑色矩阵层214的膜层图案化得到黑色矩阵层214，通过硬掩膜利用黑色矩阵层214采用自对准方式对第二钝化层213的膜层进行蚀刻去除，得到第二钝化层213。蚀刻方法可以为干法蚀刻。第二钝化层213的膜层材料可以采用如SiOx，SiNx或SiNOx等。\n\n[0112](11)请参考图11，衬底基板100的顶面(A面)涂布第二顶面保护膜层1000使其覆盖中间介电层208、第一源极209、第二源极/像素电极211和公共阴极212、第二钝化层213和黑色矩阵214，以对衬底基板100的顶面进行保护。\n\n[0113](12)请参考图12和图13，去除第一底面保护膜层900，并对衬底基板100的底面涂布第二底面保护膜层1100，用于保护保护衬底基板100的底面电路不在制程中受损，然后经切割后将第二底面保护膜层1100和第二顶面保护膜层1000去除，再在衬底基板100的两侧(A面和B面)分别涂上第三顶面保护膜层1200和第三底面保护膜层1300，并暴露出第一源极209与侧面导线500连接处、以及第一金属膜层400与侧面导线500连接处，以用于与侧面导线500连接。其中，第二顶面保护膜层1000、第二底面保护膜层1100、第三顶面保护膜层1200和第三底面保护膜层1300的材质可以采用有机胶。\n\n[0114](13)请参考图13，将第一金属膜层400的侧印焊盘403与第一源极209通过侧面导线500电连接。其中侧面导线500可以通过印刷或镀膜后图案化形成。\n\n[0115](14)请参考图14，将第三顶面保护膜层1200去除，然后将微发光二极管300转移并绑定至薄膜晶体管200上，使微发光二极管300的两个电极分别与第二源极/像素电极211和公共阴极212连接。其中：所述微发光二极管300可以通过微发光二极管绑定焊盘连接至第二源极/像素电极211和公共阴极212上。所述绑定和转移操作采用现有技术中的方法即可，本发明不做特殊限定。\n\n[0116](15)请参考图15，去除第三底面保护膜层1300，将覆晶薄膜700连接至绑定焊盘402上，并将覆晶薄膜700与驱动芯片800连接。其中覆晶薄膜700可以通过导电胶1400连接至绑定焊盘402上。\n\n[0117]请参考图1至图6、图16至图24所示，以下提供一种本发明所述微发光二极管300显示基板的另一种具体制作方法，具体的是第一金属膜层400通过侧面导线500与第一栅极金属层205电连接的方案。具体步骤如下：\n\n[0118](1)至(6)，请参考图1至图6，具体步骤与前一实施例的步骤(1)至(6)相同。\n\n[0119](7)请参考图16，在半导体膜层203之上制备第二栅极绝缘层206、第二栅极金属层207、第一栅极绝缘层204和第一栅极金属层205，其中第二栅极绝缘层206与第一栅极绝缘层204可以一道工序形成，第二栅极金属层207与第一栅极金属层205可以一道工序形成，例如：在半导体膜层203之上镀膜，形成一栅极绝缘膜层，并在栅极绝缘膜层上镀一栅极金属膜层，然后对所述栅极金属膜层进行图案化处理，得到第二栅极金属层207和第一栅极金属层205，然后分别利用第二栅极金属层207和第一栅极金属层205自对准图案化所述栅极金属膜层，分别得到第二栅极绝缘层206与第一栅极绝缘层204。其中第二栅极绝缘层206形成在所述半导体膜层203之上，第二栅极金属层207形成在所述第二栅极绝缘层206之上；第一栅极绝缘层204形成在所述绝缘层202上方、所述半导体膜层203之外、且位于所述衬底基板100的边缘，第一栅极金属层205形成在第一栅极绝缘层204之上，其位置与第一栅极绝缘层204相同。栅极绝缘膜层的材料如SiOx，SiNx，Al2O3/SiNx/SiOx或SiOx/SiNx/SiOx等；栅极金属膜层的材料如Mo、Mo/Al、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr或CuNb等。\n\n[0120](8)请参考图17，在绝缘层202、半导体膜层203、第二栅极绝缘层206、第二栅极金属层207、第一栅极绝缘层204和第一栅极金属层205的上方镀膜，使其覆盖绝缘层202、半导体膜层203、第二栅极绝缘层206、第二栅极金属层207，以及部分第一栅极绝缘层204和部分第一栅极金属层205，并对其图案化，形成中间介电层208，并在中间介电层208上形成有三个贯穿通孔，分别为第一通孔2081、第二通孔2082和第三通孔2083；其中第一通孔2081贯穿中间介电层208和绝缘层202并通向遮光层201，第二通孔2082和第三通孔2083均贯穿中间介电层208并通向半导体膜层203。中间介电层208需要所述第一栅极金属层205的表面至少一部分是暴露的用于与所述侧面导线500连接，例如图17所示的覆盖所述第一栅极绝缘层204的侧面以及所述第一栅极金属层205侧面和部分上表面，同时需要使第一栅极金属层205的表面至少一部分是暴露的以用于与所述侧面导线500连接。中间介电层208的膜层材料如SiOx，SiNx或SiNOx等。\n\n[0121](9)请参考图18，在中间介电层208的上方镀膜，形成源漏极210金属电极层，并对其图案化处理，获得漏极210、第二源极/像素电极211和公共阴极212；其中：漏极210通过第三通孔2083与半导体膜层203相连；第二源极/像素电极211位于中间介电层208上方的部分命名为第一部分，用于与微发光二极管300连接、第二源极/像素电极211的第二部分通过第一通孔2081与遮光层201相连，第二源极/像素电极211的第三部分通过第二通孔2082与半导体膜层203相连；公共阴极212位于中间介电层208的上方，用于与微发光二极管300连接。源漏极210金属电极层的膜层材料可以采用如Mo、Mo/Al、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr或CuNb等。\n\n[0122](10)请参考图19，具体步骤与前一实施例的步骤(10)相同。\n\n[0123](11)请参考图20，在衬底基板100的顶面(A面)涂布第二顶面保护膜层1000使其覆盖中间介电层208、第一栅极金属层205、第一栅极绝缘层204、第二源极/像素电极211、公共阴极212、第二钝化层213和黑色矩阵214，以对衬底基板100的顶面进行保护。\n\n[0124](12)请参考图21和图22，去除第一底面保护膜层900，并对衬底基板100的底面涂布第二底面保护膜层1100，用于保护保护底面电路不在制程中受损，切割后将第二底面保护膜层1100和第二顶面保护膜层1000去除，再在显示基板两个表面涂上第三顶面保护膜层1200和第三底面保护膜层1300，并暴露出第一栅极金属层205与侧面导线500连接处、和第一金属膜层400与侧面导线500连接处(即侧印焊盘403)，以用于与侧面导线500连接。其中，第二顶面保护膜层1000、第二底面保护膜层1100、第三顶面保护膜层1200和第三底面保护膜层1300的材质可以采用有机胶。\n\n[0125](13)至(15)，请参考图22至图24，具体步骤与前一实施例的步骤(13)至(15)相同。\n\n[0126]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0127]以上对本发明实施例进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及微发光二极管显示器制造技术领域，具体涉及一种微发光二极管显示基板及其制作方法。\n\n背景技术\n\n[0002]在显示领域里，如液晶显示器(Liquid Crystal Display，LCD)、有机发光半导体(Organic Light-Emitting Diode，OLED)、发光二极管(Light Emitting Diode，简称LED)屏幕，单一屏幕体越大，制作成本越高(价格/面积)，因此一般的超大屏幕通常采用若干块小的屏幕拼接一起形成，以降低单位面积的成本。由于一般的屏幕都会带有边框，这会导致拼接屏的显示区域带有若干条非显示暗区，降低显示品质。如何降低拼接屏的拼接缝的大小，已经成为业界热门的研究对象。\n\n发明内容\n\n[0003]本发明实施例提供一种微发光二极管(Micro LED)显示基板及其制作方法，可以最大限度的降低高解析度屏幕的拼接缝问题，并简化薄膜晶体管(Thin Film Transistor，TFT)基板显示面、底面电路的结构。\n\n[0004]第一方面，本发明实施例提供一种微发光二极管显示基板，包括：\n\n[0005]一衬底基板，具有顶面与底面，\n\n[0006]薄膜晶体管，形成于所述衬底基板的顶面；\n\n[0007]微发光二极管，设置于所述衬底基板的顶面、且与所述薄膜晶体管连接；以及\n\n[0008]第一金属膜层，设置于所述衬底基板的底面，且至少形成一扇出电路图案和一侧印焊盘；\n\n[0009]其中，所述第一金属膜层的扇出电路图案与所述侧印焊盘连接，所述侧印焊盘通过设置在所述衬底基板旁边的侧面导线与所述薄膜晶体管连接。\n\n[0010]在一些实施例中，所述薄膜晶体管包括第二源极/像素电极、公共阴极、漏极、覆盖所述漏极的第二钝化层和形成在所述第二钝化层之上的黑色矩阵层；其中：所述第二源极/像素电极和所述公共阴极分别与所述微发光二极管连接。在一些实施例中，所述钝化层与所述黑色矩阵层共用一道光罩制程进行自对准图案化形成。\n\n[0011]在一些实施例中，所述薄膜晶体管还包括：半导体膜层和遮光层；所述第二源极/像素电极分别与所述微发光二极管、所述半导体膜层和所述遮光层相连接；所述漏极与所述半导体膜层连接。\n\n[0012]在一些实施例中，所述薄膜晶体管还包括：\n\n[0013]覆盖所述遮光层的绝缘层；\n\n[0014]形成在所述半导体膜层之上的第二栅极绝缘层；\n\n[0015]形成在所述第二栅极绝缘层之上的第二栅极金属层；以及\n\n[0016]至少覆盖所述绝缘层、半导体膜层、第二栅极绝缘层和第二栅极金属层的中间介电层；其中：\n\n[0017]所述遮光层形成在所述衬底基板的顶面上；\n\n[0018]所述半导体膜层形成在所述绝缘层之上；\n\n[0019]所述第二源极/像素电极的第一部分形成于所述中间介电层之上并与所述微发光二极管连接、第二部分贯穿所述中间介电层和所述绝缘层与所述遮光层连接、以及第三部分贯穿所述中间介电层与所述半导体膜层连接；\n\n[0020]所述漏极的一部分形成于所述中间介电层之上并由所述第二钝化层覆盖、另一部分贯穿所述中间介电层与所述半导体膜层连接。\n\n[0021]在一些实施例中，所述薄膜晶体管还包括第一源极；所述第一源极位于所述衬底基板边缘处、并形成在所述中间介电层之上；所述第一源极通过设置在所述衬底基板旁边的侧面导线与所述第一金属膜层的侧印焊盘连接。\n\n[0022]在一些实施例中，所述薄膜晶体管还包括第一栅极绝缘层和第一栅极金属层；所述第一栅极绝缘层位于所述衬底基板边缘处、并形成在所述绝缘层之上、所述半导体膜层之外；所述第一栅极金属层形成在所述第一栅极绝缘层之上；所述第一栅极金属层通过设置在所述衬底基板旁边的侧面导线与所述第一金属膜层的侧印焊盘连接。\n\n[0023]第二方面，本发明还提供了一种上述微发光二极管显示基板的制作方法，包括以下步骤：\n\n[0024]步骤A、在所述衬底基板的底面制备第一金属膜层，并形成至少一扇出电路图案和一侧印焊盘，并使所述扇出电路与所述侧印焊盘相连接；\n\n[0025]步骤B、在所述衬底基板的顶面制备薄膜晶体管；\n\n[0026]步骤C、将设置在所述衬底基板顶面的微发光二极管连接到所述薄膜晶体管上；以及\n\n[0027]步骤D、将薄膜晶体管通过设置在所述衬底基板旁边的侧面导线与所述第一金属膜层的侧印焊盘相连接。\n\n[0028]在一些实施例中，所述步骤B包括：\n\n[0029]步骤b6、形成源漏极金属电极层，并经图案化至少形成漏极，第二源极/像素电极和公共阴极；以及\n\n[0030]步骤b7、在所述漏极之上共用一道光罩制程进行自对准图案化形成第二钝化层和黑色矩阵层，使所述第二钝化层覆盖所述漏极，并使所述黑色矩阵层覆盖所述第二钝化层表面；\n\n[0031]所述步骤C包括：将微发光二极管绑定在所述第二源极/像素电极和公共阴极上。\n\n[0032]在一些实施例中，所述步骤B还包括：\n\n[0033]步骤b1、在所述衬底基板的顶面形成遮光层；\n\n[0034]步骤b2、在所述遮光层之上和所述衬底基板的顶面形成绝缘层；\n\n[0035]步骤b3、在所述绝缘层之上形成半导体膜层；\n\n[0036]步骤b4、在所述半导体膜层之上形成第二栅极绝缘层，并在所述第二栅极绝缘层之上形成第二栅极金属层；以及\n\n[0037]步骤b5、形成中间介电层，使其至少覆盖所述绝缘层、半导体膜层、第二栅极绝缘层和第二栅极金属层；\n\n[0038]其中：在所述步骤b6中，所述源漏极金属电极层形成在所述中间介电层之上；所述第二源极/像素电极的第一部分位于介电层之上并与所述微发光二极管连接、第二部分贯穿所述中间介电层和所述绝缘层与所述遮光层连接、第三部分通过贯穿所述中间介电层与所述半导体膜层连接；所述漏极的一部分形成于所述中间介电层之上，另一部分贯穿所述中间介电层与所述半导体膜层连接。\n\n[0039]在一些实施例中，在所述步骤b6中，所述图案化还形成有第一源极，所述第一源极形成于所述中间介电层之上、且位于所述衬底基板边缘处；所述步骤D是将所述第一源极通过设置在所述衬底基板旁边的侧面导线与所述第一金属膜层的侧印焊盘连接；\n\n[0040]或者，在所述步骤b4中，还包括在所述绝缘层上方、所述半导体膜层之外、且位于所述衬底基板边缘处形成第一栅极绝缘层，以及在所述第一栅极绝缘层上方形成第一栅极金属层；在步骤b5中，所述中间介电层还覆盖部分所述第一栅极绝缘层和部分所述第一栅极金属层，并使所述第一栅极金属层的表面至少一部分是暴露的，用于与所述侧面导线连接；所述步骤D是将所述第一栅极金属层通过设置在所述衬底基板旁边的侧面导线与所述第一金属膜层的侧印焊盘连接。\n\n[0041]与现有技术相比，本发明将扇出(fanout)电路制作在衬底基板的底面，扇出电路可以通过绑定焊盘(bonding pad)与覆晶薄膜(chip on film，COF)和驱动芯片(IC)连接，底面还可以连接静电防护电路等其他电路，而衬底基板的顶面制作有TFT和Micro LED用于显示，衬底基板底面的扇出电路与衬底基板顶面的显示像素(即TFT和Micro LED)通过衬底基板旁边的侧面导线(side wiring)和侧印焊盘(side wiring pad)连接，使得当微发光二极管显示基板和边框组装后位于衬底基板顶面的显示像素区域可以最大程度的靠近边框，使得显示像素区域与边框之间的拼接缝宽度达到一个像素单元的大小，在宏观上无明显的拼接痕迹，达到无边框效果，因此，在拼接屏上使用此技术，可以使得拼接屏之间无明显的拼接无显示区域，提升拼接屏的现实品质。\n\n[0042]此外，现有技术中TFT结构一般包括半导体层，栅极绝缘层，栅极，中间介电层，源漏极金属电极层，钝化层和氧化铟锡(ITO)像素电极层，而通常Micro LED一般绑定在TFT的ITO像素电极层上，而钝化层通常需要单独制程来开孔，ITO像素电极层也需要单独制程来制作。而本发明方案中将Micro LED直接绑定在TFT的源漏极金属电极层上(即第二源极/像素电极和公共阴极)，不需要采用单独的制程来给钝化层开孔，也不需要采用单独制程制作ITO像素电极层，只需要将钝化层与黑色矩阵层共用一道光罩制程以自对准方式完成图案化即可，即：省略了钝化层单独开孔和制备ITO像素电极层的额外制程，这样使得显示基板的顶面只需要7道制程即可制作完成TFT，简化了显示基板TFT面的结构和制作过程，有利于提升产品的良率及降低制造成本。\n\n附图说明\n\n[0043]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0044]图1至图15为本发明所述微发光二极管显示基板一实施方式的制作过程示意图。\n\n[0045]图16至图24为本发明所述微发光二极管显示基板另一实施方式的制作过程示意图。\n\n具体实施方式\n\n[0046]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0047]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0048]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0049]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0050]下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0051]具体的，请参阅图1至24，图1至图15提供了本发明所述微发光二极管显示基板一实施方式的制作过程示意图；图16至图24提供了本发明所述微发光二极管显示基板另一实施方式的制作过程示意图，其中图15示出了本发明所述微发光二极管显示基板一实施方式的结构示意图；图24示出了本发明所述微发光二极管显示基板另一实施方式的结构示意图；图中A表示衬底基板100的顶面，B表示衬底基板100的底面。\n\n[0052]请参阅图15和图24，本发明实施例提供了一种微发光二极管显示基板，包括一衬底基板100，薄膜晶体管200，微发光二极管300，及第一金属膜层400。\n\n[0053]所述衬底基板100，具有顶面与底面。所述衬底基板100可以是玻璃基板。\n\n[0054]所述薄膜晶体管200，形成于所述衬底基板100的顶面(即A面)。\n\n[0055]所述微发光二极管300，设置于所述衬底基板100的顶面、且与所述薄膜晶体管200连接。\n\n[0056]所述第一金属膜层400，设置于所述衬底基板100的底面(即B面)，且至少形成一扇出电路图案401和一侧印焊盘403。其中，所述第一金属膜层400的扇出电路图案401与所述侧印焊盘403连接，所述侧印焊盘403通过设置在所述衬底基板100旁边的侧面导线500与所述薄膜晶体管200连接。\n\n[0057]所述侧面导线500通过印刷或镀膜后图案化的方式形成。\n\n[0058]本实施例在A面形成的薄膜晶体管200与微发光二极管300连接，用于控制发光二极管300的亮度变化，A面作为显示基板的显示面。将A面形成的薄膜晶体管200通过设置在衬底基板100旁边的侧面导线500及侧印焊盘403与B面的扇出电路图案401电连接，这样的结构使得原来位于衬底基板100顶面的扇出电路可以移动到衬底基板100的底面，使得当微发光二极管300显示基板和边框组装后，位于衬底基板100顶面的显示像素区域可以最大程度的靠近边框，使得显示像素区域与边框之间的拼接缝达到一个像素单元的大小，在宏观上无明显的拼接痕迹，达到无边框效果，因此，在拼接屏上使用此技术，可以使得拼接屏之间无明显的拼接无显示区域，提升拼接屏的现实品质。\n\n[0059]在一些实施例中，B面还可以形成其他电路，如绑定焊盘402、静电防护电路等。例如，如图15和图24所示，所述第一金属膜层400还形成有一绑定焊盘402，所述绑定焊盘402与所述扇出电路图案401相连接。\n\n[0060]所述绑定焊盘402还可以与覆晶薄膜700和驱动芯片800连接。例如，所述微发光二极管显示基板还包括：一覆晶薄膜700及一驱动芯片800；所述覆晶薄膜700设置于所述衬底基板100的底面、且与所述绑定焊盘402连接；所述驱动芯片800，设置于所述衬底基板100的底面、且与所述覆晶薄膜700连接。其中，所述覆晶薄膜700可以通过导电胶1400连接至所述绑定焊盘402上。\n\n[0061]请参考图15和图24，在一些实施例中，所述薄膜晶体管200包括第二源极/像素电极211、公共阴极212、漏极210、覆盖所述漏极210的第二钝化层213和形成在所述第二钝化层213之上的黑色矩阵层214。其中：所述第二源极/像素电极211和所述公共阴极212分别与所述微发光二极管300连接。所述钝化层213与所述黑色矩阵层214可以共用一道光罩制程进行自对准图案化形成。所述钝化层213和所述黑色矩阵层214一起作为薄膜晶体管200顶部的遮光层及水氧保护层。\n\n[0062]请参考图15和图24，在一些实施例中，所述薄膜晶体管200还包括：半导体膜层203和遮光层201；所述第二源极/像素电极211分别与所述微发光二极管300、所述半导体膜层203、以及所述遮光层201相连接；所述漏极210与所述半导体膜203层连接。\n\n[0063]请参考图15和图24，在一些实施例中，所述薄膜晶体管200还包括：\n\n[0064]覆盖所述遮光层201的绝缘层202；\n\n[0065]形成在所述半导体膜层203之上的第二栅极绝缘层206；\n\n[0066]形成在所述第二栅极绝缘层206之上的第二栅极金属层207；以及\n\n[0067]至少覆盖所述绝缘层202、半导体膜层203、第二栅极绝缘层206和第二栅极金属层207的中间介电层208；其中：\n\n[0068]所述遮光层201形成在所述衬底基板100的顶面上；\n\n[0069]所述半导体膜层203形成在所述绝缘层202之上；\n\n[0070]所述第二源极/像素电极211的第一部分形成于所述中间介电层208之上并与所述微发光二极管300连接、第二部分贯穿所述中间介电层208和所述绝缘层202与所述遮光层201连接、以及第三部分贯穿所述中间介电层208与所述半导体膜层203连接；\n\n[0071]所述漏极210的一部分形成于所述中间介电层208之上并由所述第二钝化层213覆盖、另一部分贯穿所述中间介电层208与所述半导体膜层203连接。\n\n[0072]本实施例中，实现第二源极/像素电极211与所述遮光层201连接、第二源极/像素电极211与半导体膜层203连接、以及漏极210与半导体膜层203连接的方法，例如：在所述绝缘层202和所述中间介电层208上开设第一通孔2081，使得第一通孔2081贯穿所述绝缘层202和所述中间介电层208并通向所述遮光层201；并在所述中间介电层208上开设贯穿所述中间介电层208并且通向所述半导体膜层203的第二通孔2082和第三通孔2083；所述第二源极/像素电极211的第二部分通过第一通孔与所述遮光层201相连接，所述第二源极/像素电极211的第三部分通过第二通孔2082与所述半导体膜层203相连接。所述漏极210通过第三通孔2083与所述半导体膜层203相连接。\n\n[0073]请参考图15，在一些实施例中，所述薄膜晶体管200还包括第一源极209；所述第一源极209位于所述衬底基板100边缘处、并形成在所述中间介电层208之上；所述第一源极209通过设置在所述衬底基板100旁边的侧面导线500与所述第一金属膜层400的侧印焊盘403连接。其中所述第一源极209的表面至少一部分是暴露的，以用于连接侧面导线500。\n\n[0074]或者，请参考图24，在另一些实施例中，所述薄膜晶体管200还包括第一栅极绝缘层204和第一栅极金属层205；所述第一栅极绝缘层204位于所述衬底基板100边缘处、并形成在所述绝缘层202之上、所述半导体膜层203之外；所述第一栅极金属层205形成在所述第一栅极绝缘层204之上；所述第一栅极金属层205通过设置在所述衬底基板100旁边的侧面导线500与所述第一金属膜层400的侧印焊盘403连接。本实施例中，第一栅极绝缘层204可以与第二栅极绝缘层206同时制作形成，第一栅极金属层205可以与第二栅极金属层207同时制作形成。此外，所述中间介电层208可以覆盖部分所述第一栅极绝缘层204和部分所述第一栅极金属层205，例如图24所示的覆盖所述第一栅极绝缘层204的侧面以及所述第一栅极金属层205侧面和部分上表面，同时需要使第一栅极金属层205的表面至少一部分是暴露的以用于与所述侧面导线500连接。\n\n[0075]请参考图1至图24所示，本实施例还提供了一种所述微发光二极管显示基板的制作方法，包括以下步骤：\n\n[0076]步骤A、在所述衬底基板100的底面制备第一金属膜层400，并形成至少一扇出电路图案401和一侧印焊盘403，并使所述扇出电路401与所述侧印焊盘403相连接；\n\n[0077]步骤B、在所述衬底基板100的顶面制备薄膜晶体管200；\n\n[0078]步骤C、将设置在所述衬底基板100顶面的微发光二极管300连接到所述薄膜晶体管200上；以及\n\n[0079]步骤D、将薄膜晶体管200通过设置在所述衬底基板100旁边的侧面导线500与所述第一金属膜层400的侧印焊盘403连接。\n\n[0080]所述侧面导线500采用印刷或镀膜图案化的方式形成。\n\n[0081]本实施例方法在A面形成的薄膜晶体管200与微发光二极管300连接，用于控制发光二极管300的亮度变化，A面作为显示基板的显示面。将A面形成的薄膜晶体管200通过设置在衬底基板100旁边的侧面导线500与B面的侧印焊盘403电连接，进而实现A面薄膜晶体管200与B面的扇出电路图案401电连接，这样的结构使得原来位于衬底基板100顶面的电路可以移动到衬底基板100的底面，使得位于衬底基板100顶面的显示像素区域可以最大程度的靠近显示边框，使得拼接缝达到一个像素单元水平，在宏观上无明显的拼接痕迹，达到无边框效果，因此，在拼接屏上使用此技术，可以使得拼接屏之间无明显的拼接无显示区域，提升拼接屏的现实品质。\n\n[0082]在一实施例中，请参考图15和图24所示，B面还可以形成其他电路，如绑定焊盘402、静电防护电路等。例如，所述步骤A中，所述第一金属膜层400还形成有一绑定焊盘402，并使绑定焊盘402与所述扇出电路图案401连接。\n\n[0083]所述绑定焊盘402还可以连接覆晶薄膜700和驱动芯片800连接。例如，所述微发光二极管显示基板的制作方法还包括：将一覆晶薄膜700设置于所述衬底基板100的底面、且与所述绑定焊盘402连接；及将一驱动芯片800设置于所述衬底基板100的底面、且与所述覆晶薄膜700连接。其中，所述覆晶薄膜700可以通过导电胶1400连接至所述绑定焊盘402上。\n\n[0084]请参考图1至图15、图16至图24，在一些实施例中，所述步骤B包括：\n\n[0085]步骤b6、形成源漏极210金属电极层，并经图案化至少形成漏极210，第二源极/像素电极211和公共阴极212；以及\n\n[0086]步骤b7、在所述漏极210之上共用一道光罩制程进行自对准图案化形成第二钝化层213和黑色矩阵层214，使所述第二钝化层213覆盖所述漏极210，并使所述黑色矩阵层214覆盖所述第二钝化层213表面；其中，所述钝化层213和所述黑色矩阵层214一起作为薄膜晶体管200顶部的遮光层201及水氧保护层；\n\n[0087]所述步骤C包括：将微发光二极管300绑定在所述第二源极/像素电极211和公共阴极212上。\n\n[0088]现有技术中薄膜晶体管结构一般包括半导体层，栅极绝缘层，栅极，中间介电层，源漏极属电极层，钝化层和ITO像素电极层，而通常微发光二极管一般绑定在薄膜晶体管的ITO像素电极层上，而钝化层通常需要单独制程来开孔，ITO像素电极层也需要单独制程来制备。而本发明方案中将微发光二极管300绑定在薄膜晶体管的源漏极金属电极层上(即第二源极/像素电极211和公共阴极212)，可以省略钝化层单独开孔和制备ITO像素电极层的额外制程，即：本发明不需要采用单独的制程来给钝化层开孔，也不需要采用单独制程制备ITO像素电极层，只需要将钝化层与黑色矩阵层214共用一道光罩制程以自对准方式完成图案化即可，这样使得显示基板的顶面只需要7道制程即可制备完成薄膜晶体管200，简化了显示基板薄膜晶体管面的结构和制作过程，有利于提升产品的良率及降低制造成本。\n\n[0089]请参考图1至图15、图16至图24，在一些实施例中，所述步骤B还包括：\n\n[0090]步骤b1、在所述衬底基板100的顶面形成遮光层201；\n\n[0091]步骤b2、在所述遮光层201之上和所述衬底基板100的顶面形成绝缘层202；\n\n[0092]步骤b3、在所述绝缘层202之上形成半导体膜层203；\n\n[0093]步骤b4、在所述半导体膜层203之上形成第二栅极绝缘层206，并在所述第二栅极绝缘层206之上形成第二栅极金属层207；以及\n\n[0094]步骤b5、形成中间介电层208，使其至少覆盖所述绝缘层202、半导体膜层203、第二栅极绝缘层206和第二栅极金属层207；\n\n[0095]其中：在所述步骤b6中，所述源漏极210金属电极层形成在所述中间介电层208之上；所述第二源极/像素电极211的第一部分位于介电层之上并与所述微发光二极管300连接、第二部分贯穿所述中间介电层208和所述绝缘层202与所述遮光层201连接、第三部分通过贯穿所述中间介电层208与所述半导体膜层203连接；所述漏极210的一部分形成于所述中间介电层208之上，另一部分贯穿所述中间介电层208与所述半导体膜层203连接。\n\n[0096]本实施例中，实现第二源极/像素电极211与所述遮光层201连接、第二源极/像素电极211与半导体膜层203连接、以及漏极210与半导体膜层203连接的方法，例如：在所述绝缘层202和所述中间介电层208上开设第一通孔2081，使得第一通孔2081贯穿所述绝缘层202和所述中间介电层208并通向所述遮光层201；并在所述中间介电层208上开设贯穿所述中间介电层208并且通向所述半导体膜层203的第二通孔2082和第三通孔2083；所述第二源极/像素电极211的第二部分通过第一通孔2081与所述遮光层201相连接，所述第二源极/像素电极211的第三部分通过第二通孔2082与所述半导体膜层203相连接。所述漏极210通过第三通孔2083与所述半导体膜层203相连接。\n\n[0097]请参考图1至图15，在一些实施例中，在所述步骤b6中，所述图案化还形成有第一源极209，所述第一源极209形成于所述中间介电层208之上、且位于所述衬底基板100边缘处；所述步骤D是将所述第一源极209通过设置在所述衬底基板100旁边的侧面导线500与所述第一金属膜层400的侧印焊盘403连接。所述第一源极209的表面至少一部分是暴露的，以用于连接侧面导线500。\n\n[0098]请参考图16至图24，在一些实施例中，在所述步骤b4中，还包括在所述绝缘层202上方、所述半导体膜层203之外、且位于所述衬底基板100边缘处形成第一栅极绝缘层204，以及在所述第一栅极绝缘层204上方形成第一栅极金属层205；在步骤b5中，所述中间介电层208还覆盖部分所述第一栅极绝缘层204和部分所述第一栅极金属层205，并使所述第一栅极金属层205的表面至少一部分是暴露的，用于与所述侧面导线500连接；所述步骤D是将所述第一栅极金属层205通过设置在所述衬底基板100旁边的侧面导线500与所述第一金属膜层400的侧印焊盘403连接。\n\n[0099]本实施例中，第一栅极绝缘层204可以与第二栅极绝缘层206同时制作形成，第一栅极金属层205可以与第二栅极金属层207同时制作形成。此外，所述中间介电层208可以覆盖部分所述第一栅极绝缘层204和部分所述第一栅极金属层205，例如图24所示的覆盖所述第一栅极绝缘层204的侧面以及所述第一栅极金属层205侧面和部分上表面，同时需要使第一栅极金属层205的表面至少一部分是暴露的以用于与所述侧面导线500连接。\n\n[0100]以下以本发明所述微发光二极管300显示基板的其中两种具体制作方法为例进行详细说明。其中图1至图15示出了本发明一实施方式微发光二极管显示基板的制作过程，图16至图24示出了本发明另一实施例微发光二极管显示基板的制作过程，图中A表示衬底基板100的顶面，B表示衬底基板100的底面。\n\n[0101]请参考图1至图15所示，一种微发光二极管显示基板的具体制作方法，具体步骤如下：\n\n[0102](1)请参考图1，在衬底基板100的底面(即图中B面)镀一层金属膜形成第一金属膜层400，并对第一金属膜层400图案化形成至少一扇出电路图案401、一绑定焊盘402及一侧印焊盘403。其中：位于衬底基板100边缘、且靠近侧面导线500一端为侧印焊盘403，用于与侧面导线500连接；所述第一金属膜层400的另一端为绑定焊盘402，用于连接覆晶薄膜700和驱动芯片800；所述第一金属膜层400上侧印焊盘403与绑定焊盘402之间的为扇出电路图案401。侧印焊盘403与扇出电路图案401连接，扇出电路图案401与绑定焊盘402连接。为了方便第一金属膜层400与侧面导线500连接，第一金属膜层400可以设置在靠近侧面导线500的一侧；衬底基板100可以采用如玻璃基板等；膜层材料可以采用如Mo、Mo/Al/Mo、Mo/Cu或Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr或CuNb等。\n\n[0103](2)请参考图2，在衬底基板100和第一金属膜层400的上方镀膜，使其覆盖在衬底基板100和第一金属膜层400的上方，并进行图案化使第一金属膜层400两端的侧印焊盘403和绑定焊盘402全部或部分暴露出来，形成第一钝化层600。其中：全部或部分暴露侧印焊盘403以方便与侧面导线500连接；全部或部分暴露绑定焊盘402以方便与连接覆晶薄膜700和驱动芯片800。第一钝化层600的膜层材料可以采用如SiNx或SiOx等。\n\n[0104](3)请参考图3，在第一钝化层600和第一金属膜层400的上方形成第一底面保护膜层900，用于防止制作过程中对衬底基板100底面结构造成破坏，起到保护衬底基板100底面结构的作用。其中：第一底面保护膜层900的材料可以采用如SiNx或SiOx等。\n\n[0105](4)请参考图4，对衬底基板100进行翻转，使衬底基板100的底面位于上方。\n\n[0106](5)请参考图5，在衬底基板100的顶面上镀膜，并对其图案化，形成遮光层201。其中：遮光层201材料可以采用如Mo、Mo/Al/Mo、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr或CuNb等。\n\n[0107](6)请参考图6，在衬底基板100和遮光层201的上方镀膜，使其覆盖衬底基板100和遮光层201，形成绝缘层202；在绝缘层202的上方镀膜，并对其图案化，获得半导体膜层203。其中：遮光层201的膜层材料可以采用如SiOx、SiNx、SiNx/SiOx或SiNOx等。半导体膜层203的材料如IGZO，IGTO，IGZO，IGO，IZO或AIZO等。\n\n[0108](7)请参考图7，在半导体膜层203之上镀膜，制备第二栅极绝缘层206和第二栅极金属层207，例如：在半导体膜层203之上镀膜，形成一栅极绝缘膜层，并在栅极绝缘膜层上镀一栅极金属膜层，然后对所述栅极金属膜层进行图案化处理，得到第二栅极金属层207，然后利用第二栅极金属层207自对准图案化所述栅极金属膜层，得到第二栅极绝缘层206。其中，栅极绝缘膜层材料可以采用如SiOx，SiNx，Al2O3/SiNx/SiOx或SiOx/SiNx/SiOx等；栅极金属膜层材料可以采用如Mo、Mo/Al、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr或CuNb等。\n\n[0109](8)请参考图8，在绝缘层202、半导体膜层203、第二栅极绝缘层206和第二栅极金属层207的上方镀膜，使其覆盖绝缘层202、半导体膜层203、第二栅极绝缘层206和第二栅极金属层207，并对其图案化，形成中间介电层208，并在中间介电层208上形成三个贯穿通孔，分别为第一通孔2081、第二通孔2082和第三通孔2083；其中第一通孔2081贯穿中间介电层208和绝缘层202并通向遮光层201，第二通孔2082和第三通孔2083均贯穿中间介电层208并通向半导体膜层203。其中：三个贯穿通孔可以通过蚀刻形成。中间介电层208的膜层材料可以采用如SiOx，SiNx或SiNOx等。\n\n[0110](9)请参考图9，在中间介电层208的上方镀膜，形成源漏极210金属电极层，并对其图案化处理，形成第一源极209、漏极210、第二源极/像素电极211和公共阴极212。其中：第一源极209位于中间介电层208的上方，其表面是暴露的，以用于与侧面导线500相连；漏极210通过第三通孔2083与半导体膜层203相连；第二源极/像素电极211位于中间介电层208上方的部分命名为第一部分，用于与微发光二极管300连接，第二源极/像素电极211的第二部分通过第一通孔2081与遮光层201相连，第二源极/像素电极211的第三部分通过第二通孔2082与半导体膜层203相连；公共阴极212位于中间介电层208的上方，用于与微发光二极管300连接；漏极210通过第三通孔2083与半导体膜层203相连。源漏极210金属电极层的膜层材料可以采用如Mo、Mo/Al、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr或CuNb等。\n\n[0111](10)请参考图10，在所述漏极210之上共用一道光罩制程进行自对准图案化形成第二钝化层213和黑色矩阵214，使所述第二钝化层213覆盖所述漏极210，并使所述黑色矩阵层214覆盖所述第二钝化层213，至此完成薄膜晶体管200的制作。例如：在漏极210上镀膜，形成第二钝化层213的膜层，然后在第二钝化层213的膜层之上镀膜形成黑色矩阵层214的膜层，对黑色矩阵层214的膜层图案化得到黑色矩阵层214，通过硬掩膜利用黑色矩阵层214采用自对准方式对第二钝化层213的膜层进行蚀刻去除，得到第二钝化层213。蚀刻方法可以为干法蚀刻。第二钝化层213的膜层材料可以采用如SiOx，SiNx或SiNOx等。\n\n[0112](11)请参考图11，衬底基板100的顶面(A面)涂布第二顶面保护膜层1000使其覆盖中间介电层208、第一源极209、第二源极/像素电极211和公共阴极212、第二钝化层213和黑色矩阵214，以对衬底基板100的顶面进行保护。\n\n[0113](12)请参考图12和图13，去除第一底面保护膜层900，并对衬底基板100的底面涂布第二底面保护膜层1100，用于保护保护衬底基板100的底面电路不在制程中受损，然后经切割后将第二底面保护膜层1100和第二顶面保护膜层1000去除，再在衬底基板100的两侧(A面和B面)分别涂上第三顶面保护膜层1200和第三底面保护膜层1300，并暴露出第一源极209与侧面导线500连接处、以及第一金属膜层400与侧面导线500连接处，以用于与侧面导线500连接。其中，第二顶面保护膜层1000、第二底面保护膜层1100、第三顶面保护膜层1200和第三底面保护膜层1300的材质可以采用有机胶。\n\n[0114](13)请参考图13，将第一金属膜层400的侧印焊盘403与第一源极209通过侧面导线500电连接。其中侧面导线500可以通过印刷或镀膜后图案化形成。\n\n[0115](14)请参考图14，将第三顶面保护膜层1200去除，然后将微发光二极管300转移并绑定至薄膜晶体管200上，使微发光二极管300的两个电极分别与第二源极/像素电极211和公共阴极212连接。其中：所述微发光二极管300可以通过微发光二极管绑定焊盘连接至第二源极/像素电极211和公共阴极212上。所述绑定和转移操作采用现有技术中的方法即可，本发明不做特殊限定。\n\n[0116](15)请参考图15，去除第三底面保护膜层1300，将覆晶薄膜700连接至绑定焊盘402上，并将覆晶薄膜700与驱动芯片800连接。其中覆晶薄膜700可以通过导电胶1400连接至绑定焊盘402上。\n\n[0117]请参考图1至图6、图16至图24所示，以下提供一种本发明所述微发光二极管300显示基板的另一种具体制作方法，具体的是第一金属膜层400通过侧面导线500与第一栅极金属层205电连接的方案。具体步骤如下：\n\n[0118](1)至(6)，请参考图1至图6，具体步骤与前一实施例的步骤(1)至(6)相同。\n\n[0119](7)请参考图16，在半导体膜层203之上制备第二栅极绝缘层206、第二栅极金属层207、第一栅极绝缘层204和第一栅极金属层205，其中第二栅极绝缘层206与第一栅极绝缘层204可以一道工序形成，第二栅极金属层207与第一栅极金属层205可以一道工序形成，例如：在半导体膜层203之上镀膜，形成一栅极绝缘膜层，并在栅极绝缘膜层上镀一栅极金属膜层，然后对所述栅极金属膜层进行图案化处理，得到第二栅极金属层207和第一栅极金属层205，然后分别利用第二栅极金属层207和第一栅极金属层205自对准图案化所述栅极金属膜层，分别得到第二栅极绝缘层206与第一栅极绝缘层204。其中第二栅极绝缘层206形成在所述半导体膜层203之上，第二栅极金属层207形成在所述第二栅极绝缘层206之上；第一栅极绝缘层204形成在所述绝缘层202上方、所述半导体膜层203之外、且位于所述衬底基板100的边缘，第一栅极金属层205形成在第一栅极绝缘层204之上，其位置与第一栅极绝缘层204相同。栅极绝缘膜层的材料如SiOx，SiNx，Al2O3/SiNx/SiOx或SiOx/SiNx/SiOx等；栅极金属膜层的材料如Mo、Mo/Al、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr或CuNb等。\n\n[0120](8)请参考图17，在绝缘层202、半导体膜层203、第二栅极绝缘层206、第二栅极金属层207、第一栅极绝缘层204和第一栅极金属层205的上方镀膜，使其覆盖绝缘层202、半导体膜层203、第二栅极绝缘层206、第二栅极金属层207，以及部分第一栅极绝缘层204和部分第一栅极金属层205，并对其图案化，形成中间介电层208，并在中间介电层208上形成有三个贯穿通孔，分别为第一通孔2081、第二通孔2082和第三通孔2083；其中第一通孔2081贯穿中间介电层208和绝缘层202并通向遮光层201，第二通孔2082和第三通孔2083均贯穿中间介电层208并通向半导体膜层203。中间介电层208需要所述第一栅极金属层205的表面至少一部分是暴露的用于与所述侧面导线500连接，例如图17所示的覆盖所述第一栅极绝缘层204的侧面以及所述第一栅极金属层205侧面和部分上表面，同时需要使第一栅极金属层205的表面至少一部分是暴露的以用于与所述侧面导线500连接。中间介电层208的膜层材料如SiOx，SiNx或SiNOx等。\n\n[0121](9)请参考图18，在中间介电层208的上方镀膜，形成源漏极210金属电极层，并对其图案化处理，获得漏极210、第二源极/像素电极211和公共阴极212；其中：漏极210通过第三通孔2083与半导体膜层203相连；第二源极/像素电极211位于中间介电层208上方的部分命名为第一部分，用于与微发光二极管300连接、第二源极/像素电极211的第二部分通过第一通孔2081与遮光层201相连，第二源极/像素电极211的第三部分通过第二通孔2082与半导体膜层203相连；公共阴极212位于中间介电层208的上方，用于与微发光二极管300连接。源漏极210金属电极层的膜层材料可以采用如Mo、Mo/Al、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr或CuNb等。\n\n[0122](10)请参考图19，具体步骤与前一实施例的步骤(10)相同。\n\n[0123](11)请参考图20，在衬底基板100的顶面(A面)涂布第二顶面保护膜层1000使其覆盖中间介电层208、第一栅极金属层205、第一栅极绝缘层204、第二源极/像素电极211、公共阴极212、第二钝化层213和黑色矩阵214，以对衬底基板100的顶面进行保护。\n\n[0124](12)请参考图21和图22，去除第一底面保护膜层900，并对衬底基板100的底面涂布第二底面保护膜层1100，用于保护保护底面电路不在制程中受损，切割后将第二底面保护膜层1100和第二顶面保护膜层1000去除，再在显示基板两个表面涂上第三顶面保护膜层1200和第三底面保护膜层1300，并暴露出第一栅极金属层205与侧面导线500连接处、和第一金属膜层400与侧面导线500连接处(即侧印焊盘403)，以用于与侧面导线500连接。其中，第二顶面保护膜层1000、第二底面保护膜层1100、第三顶面保护膜层1200和第三底面保护膜层1300的材质可以采用有机胶。\n\n[0125](13)至(15)，请参考图22至图24，具体步骤与前一实施例的步骤(13)至(15)相同。\n\n[0126]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0127]以上对本发明实施例进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10848, 23902, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种用于印刷锡膏的钢网，显示面板及其制备方法。\n\n背景技术\n\n[0002]Micro-LED(Micro Light Emitting Diode，微型发光二极管)技术已成为成未来显示技术的热点之一，和目前的LCD(Liquid Crystal Display，液晶显示器)、OLED(Organic Light Emitting Diode，有机发光二极管)显示器件相比，具有反应快、高色域、高解析度、低能耗等优势；但其技术难点多且技术复杂，特别是其关键技术巨量转移技术、LED颗粒微型化成为技术瓶颈，而Mini-LED(Mini Light Emitting Diode，小间距发光二极管)作为Micro-LED与背板结合的产物，具有高对比度、高显色性能等可与OLED相媲美的特点，成本稍高LCD，仅为OLED的六成左右，相对Micro-LED、OLED更易实施，所以Mini-LED成为各大面板厂商布局热点。\n\n[0003]不论是Micro-LED还是Mini-LED，均需进行SMT(Surface Mounted Technology，表面贴装工艺)，即把大量的LED芯片转移至基板上，在SMT中，需在LED芯片焊接处提前印刷锡膏，如何实现高精度的印刷，且不损伤基板，成为了SMT工艺中的技术难点之一。\n\n发明内容\n\n[0004]为解决上述问题，第一方面，本发明提供一种用于印刷锡膏的钢网，所述钢网包括：\n\n[0005]钢网主体，包括多个阵列排布的第一通孔；以及\n\n[0006]缓冲层，设于所述钢网主体的底面，包括与所述多个阵列排布的第一通孔一一对应的多个第二通孔。\n\n[0007]进一步地，所述第二通孔的横截面积大于所述第一通孔的横截面积。\n\n[0008]进一步地，所述缓冲层的厚度为1-20毫米。\n\n[0009]进一步地，所述缓冲层的材料为硅胶或橡胶。\n\n[0010]进一步地，所述钢网主体的所述底面设有多个卡槽，所述缓冲层上设有多个凸块，所述多个凸块一一卡合于所述多个卡槽中，使得所述缓冲层连接于所述钢网主体的所述底面。\n\n[0011]进一步地，所述多个第一通孔与所述多个第二通孔一一相互连通，形成贯穿于所述钢网的多个通孔。\n\n[0012]另一方面，本发明还提供了一种显示面板的制备方法，包括：\n\n[0013]S10:提供一基板，在所述基板上形成阵列功能层；\n\n[0014]S20:在所述阵列功能层上形成多个阵列排布的焊盘；\n\n[0015]S30:提供一钢网，所述钢网包括钢网主体，所述钢网主体包括多个阵列排布的第一通孔，多个所述第一通孔与多个所述焊盘一一对应；以及缓冲层，贴合于所述钢网主体的底面，包括与所述多个阵列排布的第一通孔一一对应的多个第二通孔，将所述钢网的缓冲层一侧对向所述焊盘并对位，通过所述第一通孔与所述第二通孔向所述焊盘上印刷锡膏后，移走所述钢网；以及\n\n[0016]S40:将多个微型发光二极管转移并通过锡膏一一绑定于所述焊盘上。\n\n[0017]进一步地，所述第二通孔的横截面积为所述焊盘面积的1.05-2倍。\n\n[0018]进一步地，所述第一通孔的横截面积小于所述焊盘的面积。\n\n[0019]另一方面，本发明还提供了一种由上述显示面板的制备方法制备而得的显示面板。\n\n[0020]有益效果：本发明提供了一种用于印刷锡膏的钢网，显示面板及其制备方法，其中，所述钢网包括钢网主体与设于所述钢网主体一侧面的缓冲层，在使用该钢网进行锡膏印刷时，将所述缓冲层对向待印刷基板，一方面，通过钢网中通孔的辅助，实现精准的印刷，另一方面，当钢网下压基板后，所述缓冲层可起一定地缓冲作用，避免硬性的钢网与基板直接接触，导致基板短路、断路而造成良率损失的问题。\n\n附图说明\n\n[0021]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0022]图1是本发明实施例提供的一种用于印刷锡膏的钢网的截面结构示意图；\n\n[0023]图2是本发明实施例提供的一种显示面板的制备方法的文字流程示意图；\n\n[0024]图3A-3D是本发明实施例提供的一种显示面板的制备方法的结构流程示意图。\n\n具体实施方式\n\n[0025]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0026]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0027]在本申请中，“示例性”一词用来表示“用作例子、例证或说明”。本申请中被描述为“示例性”的任何实施例不一定被解释为比其它实施例更优选或更具优势。为了使本领域任何技术人员能够实现和使用本发明，给出了以下描述。在以下描述中，为了解释的目的而列出了细节。应当明白的是，本领域普通技术人员可以认识到，在不使用这些特定细节的情况下也可以实现本发明。在其它实例中，不会对公知的结构和过程进行详细阐述，以避免不必要的细节使本发明的描述变得晦涩。因此，本发明并非旨在限于所示的实施例，而是与符合本申请所公开的原理和特征的最广范围相一致。\n\n[0028]本发明实施例提供一种用于印刷锡膏的钢网，其截面结构请参阅图1，以下进行详细说明。\n\n[0029]所述钢网包括：\n\n[0030]钢网主体11，包括多个阵列排布的第一通孔131，其中，所述钢网主体11的材料不仅限于钢，还可为其他的硬性材料，其作用为通过其中的第一通孔131对锡膏印刷进行定位，以实现更高精度的锡膏印刷工艺；以及\n\n[0031]缓冲层12，设于所述钢网主体11的底面上，所述缓冲层12的整体的轮廓形状与所述钢网主体11相同且大小基本相当，为了适应待印刷基板的形状，所述缓冲层12与所述钢网主体11的形状通常为矩形，当然根据实际的工艺需求，也可为其他形状，进一步地，所述缓冲层12还包括与所述多个阵列排布的第一通孔131一一对应的多个第二通孔132。\n\n[0032]在使用本实施例提供的钢网进行锡膏印刷时，将所述缓冲层对向待印刷基板，一方面，通过钢网中第一通孔进行辅助定位，较直接印刷，可实现更高精度的锡膏印刷，有效降低印刷过程中出现印刷不均、少锡、虚焊、偏移等缺陷的概率，另一方面，当钢网下压基板后，所述缓冲层可起一定地缓冲作用，避免硬性的钢网本体与基板直接接触，导致基板上的线路出现短路、断路而造成良率损失的问题。\n\n[0033]在一些实施例中，第二通孔132的面积大于所述第一通孔131的面积，因所述缓冲层12直接接触所述待印刷基板，为使得印刷时顺利下锡，并防止印刷的锡膏黏附于所述第二通孔132的侧壁而造成基板脏污的问题，需将第二通孔132的横截面积设计地更大一些，通常会大于待印刷基板上焊盘的面积，而所述第一通孔131的横截面积通常会小于待印刷基板上焊盘，如此可一定程度上提高印刷精度。\n\n[0034]在一些实施例中，所述缓冲层的厚度为1-20毫米，该厚度不宜过厚，否则对印刷精度会造成一定影响而导致焊接不良，该厚度也不宜过薄，否则缓冲效果不够，仍会对待印刷基板造成损伤，具体应用时，根据实际的工艺需求进行选择。\n\n[0035]在一些实施例中，所述缓冲层的材料通常选用具有一定材料且不易脱落破损的材料，例如可以为硅胶或橡胶。\n\n[0036]在一些实施例中，所述钢网主体11的底面上设有多个卡槽111，所述缓冲层12上设有多个凸块121，所述多个凸块121一一卡合于所述多个卡槽111中，使得所述缓冲层连接于所述钢网主体的底面上，其中，所述多个卡槽111以及所述多个凸块121阵列排布，且均匀分布于钢网上，以实现更牢固的连接。\n\n[0037]当然，所述钢网主体11于所述缓冲层12的固定连接方式不限于上述的卡合连接，也可通过一胶层实现连接，或是多种连接方式共用。\n\n[0038]在一些实施例中，所述第一通孔131与所述第二通孔132相互连通，形成贯穿于所述钢网的通孔13，通常情况下，所述第一通孔131在所述缓冲层12上正投影的中心于所述第二通孔132的中心重合，所述第一通孔131与所述第二通孔132的截面形状与所述待印刷基板上焊盘的形状相对应，通常为矩形，正方形，圆形，椭圆形或其他形状。\n\n[0039]上述实施例所提供的用于印刷锡膏的钢网，可应用于Micro LED显示面板，MiniLED背光模组的制备中，具体地，应用于其中SMT工艺中的锡膏印刷工艺，以下仅示例性的给出应用于Micro LED显示面板制备中的具体实施例。\n\n[0040]请结合参阅图2以及图3A-3D所提供的显示面板的制备方法，本实施例提供的一种显示面板的制备方法包括如下步骤：\n\n[0041]S10:提供一基板21，在所述基板上形成阵列功能层22，即形成如图3A所示的结构，所述阵列功能层22通常包括阵列排布的多个薄膜晶体管，按照本领域常规的制备方法来形成即可；\n\n[0042]S20:在所述阵列功能层22上形成多个阵列排布的焊盘23，即形成如图3B所示的结构，所述焊盘23一一对应地形成于所述阵列功能层22中的驱动电极(图中未示出)上；\n\n[0043]S30:提供一钢网，所述钢网包括钢网主体11，所述钢网主体11包括多个阵列排布的第一通孔131，多个所述第一通孔131与多个所述焊盘23一一对应；以及缓冲层12，贴合于所述钢网主体11的底面上，包括与所述多个阵列排布的第一通孔131一一对应的多个第二通孔132，将所述钢网的缓冲层12一侧对向所述焊盘23并对位，使得所述第一通孔131的中心对准对应地所述焊盘23的中心，通过所述第一通孔131与所述第二通孔132向所述焊盘23上印刷锡膏24后，即形成如图3C所示的结构，再移走所述钢网；\n\n[0044]S40:将多个微型发光二极管25转移并通过锡膏24一一绑定于所述焊盘23上，即制备完成，形成如图3D所示的结构。\n\n[0045]当然，在上述实施例提供的显示面板的制备方法中，仅描述了部分结构，可以理解的是，除了上述结构之外，还可以根据需要，使用本领域常用的制备工艺形成任何其他的必要结构，具体此处不作限定。\n\n[0046]在一些实施例中，所述第二通孔132的横截面积大于所述焊盘23的面积，具体地，所述第二通孔132的横截面积为所述焊盘23面积的1.05-2倍，通过将所述第二通孔132的横截面积设计地较焊盘23面积略大一些，使得印刷时能够顺利下锡，且避免印刷的锡膏黏附于所述第二通孔132的侧壁而造成基板脏污，甚至导致相邻焊盘短路的问题。\n\n[0047]在一些实施例中，所述第一通孔131的横截面积小于所述焊盘23的面积，如此设计可一定程度上提高印刷精度。\n\n[0048]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见上文针对其他实施例的详细描述，此处不再赘述。\n\n[0049]以上对本发明实施例所提供的一种用于印刷锡膏的钢网，显示面板及其制备方法进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种用于印刷锡膏的钢网，显示面板及其制备方法。\n\n背景技术\n\n[0002]Micro-LED(Micro Light Emitting Diode，微型发光二极管)技术已成为成未来显示技术的热点之一，和目前的LCD(Liquid Crystal Display，液晶显示器)、OLED(Organic Light Emitting Diode，有机发光二极管)显示器件相比，具有反应快、高色域、高解析度、低能耗等优势；但其技术难点多且技术复杂，特别是其关键技术巨量转移技术、LED颗粒微型化成为技术瓶颈，而Mini-LED(Mini Light Emitting Diode，小间距发光二极管)作为Micro-LED与背板结合的产物，具有高对比度、高显色性能等可与OLED相媲美的特点，成本稍高LCD，仅为OLED的六成左右，相对Micro-LED、OLED更易实施，所以Mini-LED成为各大面板厂商布局热点。\n\n[0003]不论是Micro-LED还是Mini-LED，均需进行SMT(Surface Mounted Technology，表面贴装工艺)，即把大量的LED芯片转移至基板上，在SMT中，需在LED芯片焊接处提前印刷锡膏，如何实现高精度的印刷，且不损伤基板，成为了SMT工艺中的技术难点之一。\n\n发明内容\n\n[0004]为解决上述问题，第一方面，本发明提供一种用于印刷锡膏的钢网，所述钢网包括：\n\n[0005]钢网主体，包括多个阵列排布的第一通孔；以及\n\n[0006]缓冲层，设于所述钢网主体的底面，包括与所述多个阵列排布的第一通孔一一对应的多个第二通孔。\n\n[0007]进一步地，所述第二通孔的横截面积大于所述第一通孔的横截面积。\n\n[0008]进一步地，所述缓冲层的厚度为1-20毫米。\n\n[0009]进一步地，所述缓冲层的材料为硅胶或橡胶。\n\n[0010]进一步地，所述钢网主体的所述底面设有多个卡槽，所述缓冲层上设有多个凸块，所述多个凸块一一卡合于所述多个卡槽中，使得所述缓冲层连接于所述钢网主体的所述底面。\n\n[0011]进一步地，所述多个第一通孔与所述多个第二通孔一一相互连通，形成贯穿于所述钢网的多个通孔。\n\n[0012]另一方面，本发明还提供了一种显示面板的制备方法，包括：\n\n[0013]S10:提供一基板，在所述基板上形成阵列功能层；\n\n[0014]S20:在所述阵列功能层上形成多个阵列排布的焊盘；\n\n[0015]S30:提供一钢网，所述钢网包括钢网主体，所述钢网主体包括多个阵列排布的第一通孔，多个所述第一通孔与多个所述焊盘一一对应；以及缓冲层，贴合于所述钢网主体的底面，包括与所述多个阵列排布的第一通孔一一对应的多个第二通孔，将所述钢网的缓冲层一侧对向所述焊盘并对位，通过所述第一通孔与所述第二通孔向所述焊盘上印刷锡膏后，移走所述钢网；以及\n\n[0016]S40:将多个微型发光二极管转移并通过锡膏一一绑定于所述焊盘上。\n\n[0017]进一步地，所述第二通孔的横截面积为所述焊盘面积的1.05-2倍。\n\n[0018]进一步地，所述第一通孔的横截面积小于所述焊盘的面积。\n\n[0019]另一方面，本发明还提供了一种由上述显示面板的制备方法制备而得的显示面板。\n\n[0020]有益效果：本发明提供了一种用于印刷锡膏的钢网，显示面板及其制备方法，其中，所述钢网包括钢网主体与设于所述钢网主体一侧面的缓冲层，在使用该钢网进行锡膏印刷时，将所述缓冲层对向待印刷基板，一方面，通过钢网中通孔的辅助，实现精准的印刷，另一方面，当钢网下压基板后，所述缓冲层可起一定地缓冲作用，避免硬性的钢网与基板直接接触，导致基板短路、断路而造成良率损失的问题。\n\n附图说明\n\n[0021]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0022]图1是本发明实施例提供的一种用于印刷锡膏的钢网的截面结构示意图；\n\n[0023]图2是本发明实施例提供的一种显示面板的制备方法的文字流程示意图；\n\n[0024]图3A-3D是本发明实施例提供的一种显示面板的制备方法的结构流程示意图。\n\n具体实施方式\n\n[0025]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0026]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0027]在本申请中，“示例性”一词用来表示“用作例子、例证或说明”。本申请中被描述为“示例性”的任何实施例不一定被解释为比其它实施例更优选或更具优势。为了使本领域任何技术人员能够实现和使用本发明，给出了以下描述。在以下描述中，为了解释的目的而列出了细节。应当明白的是，本领域普通技术人员可以认识到，在不使用这些特定细节的情况下也可以实现本发明。在其它实例中，不会对公知的结构和过程进行详细阐述，以避免不必要的细节使本发明的描述变得晦涩。因此，本发明并非旨在限于所示的实施例，而是与符合本申请所公开的原理和特征的最广范围相一致。\n\n[0028]本发明实施例提供一种用于印刷锡膏的钢网，其截面结构请参阅图1，以下进行详细说明。\n\n[0029]所述钢网包括：\n\n[0030]钢网主体11，包括多个阵列排布的第一通孔131，其中，所述钢网主体11的材料不仅限于钢，还可为其他的硬性材料，其作用为通过其中的第一通孔131对锡膏印刷进行定位，以实现更高精度的锡膏印刷工艺；以及\n\n[0031]缓冲层12，设于所述钢网主体11的底面上，所述缓冲层12的整体的轮廓形状与所述钢网主体11相同且大小基本相当，为了适应待印刷基板的形状，所述缓冲层12与所述钢网主体11的形状通常为矩形，当然根据实际的工艺需求，也可为其他形状，进一步地，所述缓冲层12还包括与所述多个阵列排布的第一通孔131一一对应的多个第二通孔132。\n\n[0032]在使用本实施例提供的钢网进行锡膏印刷时，将所述缓冲层对向待印刷基板，一方面，通过钢网中第一通孔进行辅助定位，较直接印刷，可实现更高精度的锡膏印刷，有效降低印刷过程中出现印刷不均、少锡、虚焊、偏移等缺陷的概率，另一方面，当钢网下压基板后，所述缓冲层可起一定地缓冲作用，避免硬性的钢网本体与基板直接接触，导致基板上的线路出现短路、断路而造成良率损失的问题。\n\n[0033]在一些实施例中，第二通孔132的面积大于所述第一通孔131的面积，因所述缓冲层12直接接触所述待印刷基板，为使得印刷时顺利下锡，并防止印刷的锡膏黏附于所述第二通孔132的侧壁而造成基板脏污的问题，需将第二通孔132的横截面积设计地更大一些，通常会大于待印刷基板上焊盘的面积，而所述第一通孔131的横截面积通常会小于待印刷基板上焊盘，如此可一定程度上提高印刷精度。\n\n[0034]在一些实施例中，所述缓冲层的厚度为1-20毫米，该厚度不宜过厚，否则对印刷精度会造成一定影响而导致焊接不良，该厚度也不宜过薄，否则缓冲效果不够，仍会对待印刷基板造成损伤，具体应用时，根据实际的工艺需求进行选择。\n\n[0035]在一些实施例中，所述缓冲层的材料通常选用具有一定材料且不易脱落破损的材料，例如可以为硅胶或橡胶。\n\n[0036]在一些实施例中，所述钢网主体11的底面上设有多个卡槽111，所述缓冲层12上设有多个凸块121，所述多个凸块121一一卡合于所述多个卡槽111中，使得所述缓冲层连接于所述钢网主体的底面上，其中，所述多个卡槽111以及所述多个凸块121阵列排布，且均匀分布于钢网上，以实现更牢固的连接。\n\n[0037]当然，所述钢网主体11于所述缓冲层12的固定连接方式不限于上述的卡合连接，也可通过一胶层实现连接，或是多种连接方式共用。\n\n[0038]在一些实施例中，所述第一通孔131与所述第二通孔132相互连通，形成贯穿于所述钢网的通孔13，通常情况下，所述第一通孔131在所述缓冲层12上正投影的中心于所述第二通孔132的中心重合，所述第一通孔131与所述第二通孔132的截面形状与所述待印刷基板上焊盘的形状相对应，通常为矩形，正方形，圆形，椭圆形或其他形状。\n\n[0039]上述实施例所提供的用于印刷锡膏的钢网，可应用于Micro LED显示面板，MiniLED背光模组的制备中，具体地，应用于其中SMT工艺中的锡膏印刷工艺，以下仅示例性的给出应用于Micro LED显示面板制备中的具体实施例。\n\n[0040]请结合参阅图2以及图3A-3D所提供的显示面板的制备方法，本实施例提供的一种显示面板的制备方法包括如下步骤：\n\n[0041]S10:提供一基板21，在所述基板上形成阵列功能层22，即形成如图3A所示的结构，所述阵列功能层22通常包括阵列排布的多个薄膜晶体管，按照本领域常规的制备方法来形成即可；\n\n[0042]S20:在所述阵列功能层22上形成多个阵列排布的焊盘23，即形成如图3B所示的结构，所述焊盘23一一对应地形成于所述阵列功能层22中的驱动电极(图中未示出)上；\n\n[0043]S30:提供一钢网，所述钢网包括钢网主体11，所述钢网主体11包括多个阵列排布的第一通孔131，多个所述第一通孔131与多个所述焊盘23一一对应；以及缓冲层12，贴合于所述钢网主体11的底面上，包括与所述多个阵列排布的第一通孔131一一对应的多个第二通孔132，将所述钢网的缓冲层12一侧对向所述焊盘23并对位，使得所述第一通孔131的中心对准对应地所述焊盘23的中心，通过所述第一通孔131与所述第二通孔132向所述焊盘23上印刷锡膏24后，即形成如图3C所示的结构，再移走所述钢网；\n\n[0044]S40:将多个微型发光二极管25转移并通过锡膏24一一绑定于所述焊盘23上，即制备完成，形成如图3D所示的结构。\n\n[0045]当然，在上述实施例提供的显示面板的制备方法中，仅描述了部分结构，可以理解的是，除了上述结构之外，还可以根据需要，使用本领域常用的制备工艺形成任何其他的必要结构，具体此处不作限定。\n\n[0046]在一些实施例中，所述第二通孔132的横截面积大于所述焊盘23的面积，具体地，所述第二通孔132的横截面积为所述焊盘23面积的1.05-2倍，通过将所述第二通孔132的横截面积设计地较焊盘23面积略大一些，使得印刷时能够顺利下锡，且避免印刷的锡膏黏附于所述第二通孔132的侧壁而造成基板脏污，甚至导致相邻焊盘短路的问题。\n\n[0047]在一些实施例中，所述第一通孔131的横截面积小于所述焊盘23的面积，如此设计可一定程度上提高印刷精度。\n\n[0048]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见上文针对其他实施例的详细描述，此处不再赘述。\n\n[0049]以上对本发明实施例所提供的一种用于印刷锡膏的钢网，显示面板及其制备方法进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10849, 23903, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种背光模组和显示装置。\n\n背景技术\n\n[0002]Mini-LED背光因其尺寸较小，可实现超薄及多分区驱动等特点，作为液晶显示面板的背光光源得到较多应用。现有大尺寸显示装置采用的Mini-LED背光模组通常采用多块背板拼接而成，但由于相邻背板间的拼接区域Mini-LED的间距大于面内Mini-LED的间距，会造成拼接区域整体亮度低于面内，影响显示效果。\n\n[0003]因此，现有的Mini LED背光模组存在拼接区域亮度较低的技术问题，需要改进。\n\n发明内容\n\n[0004]本申请实施例提供一种背光模组和显示装置，用以缓解现有的Mini LED背光模组中拼接区域亮度较低的技术问题。\n\n[0005]本申请提供一种背光模组，包括拼接的多个背板，所述背板中设置有阵列排布的多个发光器件，所述发光器件与电源高电位信号输入端和电源低电位信号输入端电连接，用于在电源高电位信号和电源低电位信号的控制下发光，其中，所述发光器件包括位于相邻背板拼接区域的第一发光器件、以及位于所述背板其他区域的第二发光器件，至少一个背板中，所述第一发光器件与对应电源高电位信号输入端之间的第一电阻，小于所述第二发光器件与对应电源高电位信号输入端之间的第二电阻。\n\n[0006]在本申请的背光模组中，所述多个背板分别通过印刷电路板与对应的驱动芯片电连接，所述第一电阻和所述第二电阻均为设置在所述印刷电路板中的外加电阻。\n\n[0007]在本申请的背光模组中，所述第一电阻为可变电阻，所述第二电阻为固定电阻。\n\n[0008]在本申请的背光模组中，所述驱动芯片用于在所述第一发光器件工作阶段，控制调节所述第一电阻的实际接入阻值。\n\n[0009]在本申请的背光模组中，所述驱动芯片用于，根据所述拼接区域和所述其他区域的亮度差，从本地存储的电阻补偿对照表中查询得到所述亮度差对应的电阻补偿值，将所述第二电阻的阻值与所述电阻补偿值相减得到所述第一电阻的阻值。\n\n[0010]在本申请的背光模组中，所述驱动芯片用于，根据所述拼接区域和所述其他区域的亮度差，计算得到所述亮度差对应的电阻补偿值，将所述第二电阻的阻值与所述电阻补偿值相减得到所述第一电阻的阻值。\n\n[0011]在本申请的背光模组中，所述第一发光器件与对应电源高电位信号输入端之间连接线路的电阻形成所述第一电阻，所述第一发光器件与对应电源高电位信号输入端之间连接线路的电阻形成所述第二电阻。\n\n[0012]在本申请的背光模组中，所述背板中，同一列发光器件连接同一条电源高电位信号线，所述电源高电位信号线包括面内走线和扇出走线，所述第一发光器件对应的扇出走线宽度，大于所述第二发光器件对应的扇出走线宽度。\n\n[0013]在本申请的背光模组中，相邻的两个背板中，任一背板对应的第一电阻的阻值均小于第二电阻的阻值。\n\n[0014]在本申请的背光模组中，所述两个背板对应的第一电阻的阻值相等。\n\n[0015]在本申请的背光模组中，相邻的两个背板中，其中一个背板对应的第一电阻的阻值小于第二电阻的阻值，另一个背板的第一电阻的阻值等于第二电阻的阻值。\n\n[0016]在本申请的背光模组中，所述背板中，各发光器件对应的电源低电位信号均相等。\n\n[0017]在本申请的背光模组中，所述背板还包括驱动所述发光器件发光的背光驱动电路，所述背光驱动电路包括：\n\n[0018]数据信号输入模块，用于在扫描信号的控制下输入数据信号；\n\n[0019]驱动模块，与所述数据信号输入模块连接，用于在所述数据信号和所述电源高电位信号的控制下，驱动所述发光器件发光；\n\n[0020]存储模块，与所述数据信号输入模块和所述驱动模块连接，用于存储所述数据信号。\n\n[0021]在本申请的背光模组中，所述发光器件包括串联的多个Mini LED灯。\n\n[0022]本申请提供一种显示装置，包括液晶显示面板和背光模组，所述背光模组包括拼接的多个背板，所述背板中设置有阵列排布的多个发光器件，所述发光器件与电源高电位信号输入端和电源低电位信号输入端电连接，用于在电源高电位信号和电源低电位信号的控制下发光，其中，所述发光器件包括位于相邻背板拼接区域的第一发光器件、以及位于所述背板其他区域的第二发光器件，至少一个背板中，所述第一发光器件与对应电源高电位信号输入端之间的第一电阻，小于所述第二发光器件与对应电源高电位信号输入端之间的第二电阻。\n\n[0023]有益效果：本申请提供一种背光模组和显示装置，背光模组包括拼接的多个背板，所述背板中设置有阵列排布的多个发光器件，所述发光器件与电源高电位信号输入端和电源低电位信号输入端电连接，用于在电源高电位信号和电源低电位信号的控制下发光，其中，所述发光器件包括位于相邻背板拼接区域的第一发光器件、以及位于所述背板其他区域的第二发光器件，至少一个背板中，所述第一发光器件与对应电源高电位信号输入端之间的第一电阻，小于所述第二发光器件与对应电源高电位信号输入端之间的第二电阻。本申请通过将第一电阻的阻值设置为小于第二电阻阻值，使得电源高电位信号经过第一电阻后的压降小于经过第二电阻后的压降，第一发光器件两端的电压差大于第二发光器件两端的电压差，对应的第一发光器件的亮度大于第二发光器件亮度，从而使得拼接区域中间距较大的第一发光器件的整体亮度与其他区域中间距较小的第二发光器件的整体亮度相等，提升了对应显示装置的显示效果。\n\n附图说明\n\n[0024]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0025]图1为本申请实施例提供的背光模组中电源高电位信号的第一种输入方式示意图。\n\n[0026]图2为本申请实施例提供的背光模组中电源高电位信号的第二种输入方式示意图。\n\n[0027]图3为本申请实施例提供的背光模组中电源高电位信号线的分布示意图\n\n[0028]图4为本申请实施例提供的背光模组中背光驱动电路的结构示意图。\n\n[0029]图5为本申请实施例提供的显示装置的结构示意图。\n\n具体实施方式\n\n[0030]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0031]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0032]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0033]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0034]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0035]本申请实施例提供一种背光模组和显示装置，用以缓解现有的Mini LED背光模组中拼接区域亮度较低的技术问题。\n\n[0036]本申请提供一种背光模组，包括拼接的多个背板，背板中设置有阵列排布的多个发光器件，发光器件与电源高电位信号输入端和电源低电位信号输入端电连接，用于在电源高电位信号和电源低电位信号的控制下发光，其中，发光器件包括位于相邻背板拼接区域的第一发光器件、以及位于背板其他区域的第二发光器件，至少一个背板中，第一发光器件与对应电源高电位信号输入端之间的第一电阻，小于第二发光器件与对应电源高电位信号输入端之间的第二电阻。\n\n[0037]如图1所示，本申请的背光模组为中大尺寸的液晶显示面板提供背光，背光模组使用多个背板10进行拼接，背板10上设置有阵列排布的多个发光器件100，每个发光器件100又可以包括串联设置的多个Mini LED灯或Micro LED灯。每块背板10中的背光驱动电路对该背板10中的发光器件100进行单独驱动，单独控制发光，单独为液晶显示面板每个分区内的像素提供背光，相对于采用整面驱动的背光模组，分区驱动的背光模组亮度控制更加灵活，发光效果更好。\n\n[0038]位于相邻背板10拼接区域11内的发光器件100为第一发光器件110，位于其他区域12内的发光器件100为第二发光器件120。由于背光模组的采用多个背板10拼接而成，受制造工艺限制，相邻的两个背板10中位于拼接区域11内的两列第一发光器件110的间距a，大于位于其他区域12内任意相邻列第二发光器件120的间距b，因此，在第一发光器件110和第二发光器件120的发光亮度相同时，拼接区域11内不同列第一发光器件110混光后的整体亮度较低，而其他区域12内不同列第二发光器件120混光后的整体亮度较低，从而在拼接区域11内会出现拼缝暗影，后续给液晶显示面板提供背光时，会影响液晶显示面板的显示效果。\n\n[0039]如图4所示，背板10中包括阵列设置的多个发光器件100，每个发光器件100均有背光驱动电路进行驱动，背光驱动电路包括数据信号输入模块101、驱动模块102和存储模块103，数据信号输入模块101用于在扫描信号Scan的控制下输入数据信号Data；驱动模块102与数据信号输入模块101连接，用于在数据信号Data和电源高电位信号VDD的控制下，驱动发光器件100发光；存储模块103与数据信号输入模块101和驱动模块102连接，用于存储数据信号Data。\n\n[0040]具体地，数据信号输入模块101包括开关晶体管T2，驱动模块102包括驱动晶体管T1，存储模块103包括存储电容Cs，开关晶体管T2的栅极接入扫描信号Scan，开关晶体管T2的第一电极接入数据信号Data，开关晶体管T2的第二电极与驱动晶体管T1的栅极、以及存储电容Cs的第一极板连接，存储电容Cs的第二极板接地，驱动晶体管T1的第一电极接入电源高电位信号VDD，驱动晶体管T1的第二电极接入电源低电位信号VSS。\n\n[0041]发光器件100的工作阶段包括数据写入阶段t1和发光阶段t2，在数据写入阶段t1，扫描信号Scan为高电位，开关晶体管T2打开，将数据信号Data输入给驱动晶体管T1的栅极，且存储在存储电容Cs中，驱动晶体管T1打开，使发光器件100发光；在发光阶段t2，扫描信号Scan为低电位，开关晶体管T2关闭，存储电容Cs可以维持驱动晶体管T1的栅极电位，使得发光器件100继续发光。\n\n[0042]发光器件100的发光亮度与施加在发光器件100两端电压的压差相关，压差越大，发光器件100的发光亮度越大。\n\n[0043]如图1所示，在本申请中，多个背板10分别通过印刷电路板20与对应的驱动芯片30连接，每个背板10中，同一列发光器件100连接同一条电源高电位信号线，驱动芯片30中的电源高电位信号输入端通过电源高电位信号线向对应列发光器件100输入的电源高电位信号VDD。在背板10中的发光器件100工作时，整个背板10中所有发光器件100输入的电源高电位信号VDD均相等，输入的电源低电位信号VSS也相等。\n\n[0044]至少一个背板10中，第一发光器件110与对应电源高电位信号输入端之间的第一电阻，小于第二发光器件120与对应电源高电位信号输入端之间的第二电阻。如图1所示，第一电阻R1和第二电阻R2均为设置在印刷电路板20中的外加电阻，且第一电阻R1为可变电阻，第二电阻R2为固定电阻。\n\n[0045]由于每个背板10中，同一列发光器件100连接同一条电源高电位信号线，电源高电位信号线向对应列发光器件100输入相同的电源高电位信号VDD。因此，在减小拼接区域11内发光器件100与对应电源高电位信号输入端之间的电阻值时，第一发光器件110的亮度改变总是以列为单位改变。\n\n[0046]在发光器件100工作阶段，驱动芯片30控制调节第一电阻R1的阻值，使得第一电阻R1的阻值小于第二电阻R2的阻值。背板10中每列发光器件100输入的电源高电位信号VDD和电源低电位信号VSS均相等，在发光器件100与电源高电位信号输入端之间连接线路上增加第一电阻R1和第二电阻R2后，会起到分压作用，使得最终发光器件100靠近外加电阻一侧的电压减小，而由于第一电阻R1的阻值小于第二电阻R2的阻值，使得电源高电位信号VDD经过第一电阻R1后的压降小于经过第二电阻R2后的压降，则第一发光器件110两端的电压差大于第二发光器件120两端的电压差，对应的第一发光器件110的亮度大于第二发光器件120的亮度，从而使得拼接区域11中间距较大的第一发光器件110的整体亮度与其他区域12中间距较小的第二发光器件120的整体亮度相等，进而消除了拼缝暗影，提升了对应显示装置的显示效果。\n\n[0047]驱动芯片30在确定第一电阻R1的具体数值时，可以有两种方式。\n\n[0048]在一种实施例中，驱动芯片30用于，根据拼接区域11和其他区域12的亮度差，从本地存储的电阻补偿对照表中查询得到亮度差对应的电阻补偿值，将第二电阻R2的阻值与电阻补偿值相减得到第一电阻R1的阻值。电阻补偿对照表预先存储在驱动芯片30中，表中包括多个亮度或亮度范围，对应每个亮度值或亮度范围值，均有一个对应的电阻补偿值，在获取到拼接区域11和其他区域12的亮度差后，从电阻补偿对照表中查找到该亮度差对应的电阻补偿值，则将第二电阻R2的阻值与电阻补偿值的数值进行相减，根据相减后的数值调节第一电阻R1实际接入到线路中的阻值，可以使第一发光器件110的发光亮度增加，且增加的发光亮度刚好可以补偿前述的亮度差。使用查表的方式得到电阻补偿值，较为方便快捷。\n\n[0049]在一种实施例中，驱动芯片30用于，根据拼接区域11和其他区域12的亮度差，计算得到亮度差对应的电阻补偿值，将第二电阻R2的阻值与电阻补偿值相减得到第一电阻R1的阻值。对应每个亮度值或亮度范围值，均有一个对应的电阻补偿值，在获取到拼接区域11和其他区域12的亮度差后，驱动芯片30直接计算得到该亮度差对应的电阻补偿值，则将第二电阻R2的阻值与电阻补偿值的数值进行相减，根据相减后的数值调节第一电阻R1实际接入到线路中的阻值，可以使第一发光器件110的发光亮度增加，且增加的发光亮度刚好可以补偿前述的亮度差。使用计算的方式得到电阻补偿值，较为准确。\n\n[0050]在一种实施例中，相邻的两个背板10中，任一背板10对应的第一电阻R1的阻值均小于第二电阻R2的阻值。此时，如图1所示，每个拼接区域11内的两列第一发光器件100的发光亮度都得到提升，因此拼接区域11内的整体亮度提升较多，改善拼缝暗影的效果较好。当两个相邻背板10对应的第一电阻R1的阻值相等时，混光的效果较为均匀，亮度提升的效果更好。\n\n[0051]在一种实施例中，相邻的两个背板10中，其中一个背板10对应的第一电阻R1的阻值小于第二电阻R2的阻值，另一个背板的第一电阻R1的阻值等于第二电阻R2的阻值。如图2所示，以两个背板10进行拼接为例，左边背板10第一电阻R1的阻值小于第二电阻R2的阻值，右边背板10在拼接区域11和其他区域12的阻值均相等，相当于第一电阻R1的阻值等于第二电阻R2的阻值。此时，在每个拼接区域11内的两列第一发光器件110中，其中一列第一发光器件110的亮度不变，另一列第一发光器件110的亮度增大，因此也可以在一定程度上起到提升拼接区域11整体亮度的作用。在拼接区域11与其他区域12亮度差异较小的场景下，可以仅减小一列第一发光器件110对应的第一电阻R1的阻值来提升亮度，相对于图1所对应的实施例，本方法在起到提升亮度的同时，带来的能耗增加较少，成本较低。\n\n[0052]在上述实施例中，均通过在发光器件100和电源高电位信号输入端之间外加电阻来增大第一发光器件110的亮度，此外，也可以通过对原有线路进行调整，同样可起到相同的作用。\n\n[0053]在一种实施例中，第一发光器件110与对应电源高电位信号输入端之间连接线路的电阻形成第一电阻R1，第一发光器件120与对应电源高电位信号输入端之间连接线路的电阻形成第二电阻R2。\n\n[0054]具体地，如图3所示，背板10中同一列发光器件100连接同一条电源高电位信号线，电源高电位信号线包括面内走线111和扇出走线112，第一发光器件110对应的扇出走线112宽度，大于第二发光器件120对应的扇出走线112宽度。电源高电位信号线在面内的部分为面内走线111，各面内走线111相互平行，且各自连接一列发光器件100，各面内走线111在背板10下部再经由扇出走线112与连接端子40连接，将第一发光器件110对应的扇出走线112宽度设置为大于第二发光器件120对应的扇出走线112宽度，则第一发光器件110对应的扇出走线112阻值会小于第二发光器件120对应的扇出走线112阻值，最终使得第一发光器件110与电源高电位信号输入端之间的第一电阻R1阻值小于第二发光器件120与电源高电位信号输入端之间的第二电阻R2阻值，从而也可以起到增大第一发光器件110亮度的目的。\n\n[0055]此外，还可以直接将第一发光器件110型号变更，在拼接区域11设置相同电压下亮度更亮的灯型，其他区域12设置亮度稍暗的灯型，也可以起到改善拼缝暗线的作用。在灯型更换的基础上，再叠加上述任一实施例中电阻值的差异化设置，改善拼缝暗线的作用更佳。\n\n[0056]本申请通过上述方式，将第一电阻R1的阻值设置为小于第二电阻R2的阻值，使得电源高电位信号经过第一电阻R1后的压降小于经过第二电阻R2后的压降，第一发光器件110两端的电压差大于第二发光器件120两端的电压差，对应的第一发光器件110的亮度大于第二发光器件120亮度，从而使得拼接区域11中间距较大的第一发光器件110的整体亮度与其他区域12中间距较小的第二发光器件120的整体亮度相等，提升了对应显示装置的显示效果。\n\n[0057]如图5所示，本申请还提供一种显示装置，包括液晶显示面板50和背光模组，该背光模组包括拼接的多个背板10、胶框301、扩散板302、反射片303和光学膜片304，背板10上设置有阵列排布的多个发光器件100。液晶显示面板50通过粘结层(图未示出)固定在背光模组的胶框301上，背光模组中设置在背板201上的发光器件110发出的光线21，经由扩散板302、反射片303和光学膜片304后，照射到液晶显示面板50上，光线21先通过液晶显示面板50的下偏光片变成偏振光，液晶显示面板50通过TFT的开关作用，给每个像素分别输入不同大小的数据信号电压，液晶分子在不同电压下旋转的状态不同，因此对偏振光的透过程度也不同，最后经由上偏光片出射的光线亮度也不同，以此来实现多灰阶的画面显示。\n\n[0058]在本申请的显示装置中，背光模组为上述任一实施例所述的背光模组，通过将第一电阻的阻值设置为小于第二电阻阻值，使得电源高电位信号经过第一电阻后的压降小于经过第二电阻后的压降，第一发光器件两端的电压差大于第二发光器件两端的电压差，对应的第一发光器件的亮度大于第二发光器件亮度，从而使得拼接区域中间距较大的第一发光器件的整体亮度与其他区域中间距较小的第二发光器件的整体亮度相等，提升了显示装置的显示效果。\n\n[0059]根据以上实施例可知：\n\n[0060]本申请提供一种背光模组和显示装置，背光模组包括拼接的多个背板，背板中设置有阵列排布的多个发光器件，发光器件与电源高电位信号输入端和电源低电位信号输入端电连接，用于在电源高电位信号和电源低电位信号的控制下发光，其中，发光器件包括位于相邻背板拼接区域的第一发光器件、以及位于背板其他区域的第二发光器件，至少一个背板中，第一发光器件与对应电源高电位信号输入端之间的第一电阻，小于第二发光器件与对应电源高电位信号输入端之间的第二电阻。本申请通过将第一电阻的阻值设置为小于第二电阻阻值，使得电源高电位信号经过第一电阻后的压降小于经过第二电阻后的压降，第一发光器件两端的电压差大于第二发光器件两端的电压差，对应的第一发光器件的亮度大于第二发光器件亮度，从而使得拼接区域中间距较大的第一发光器件的整体亮度与其他区域中间距较小的第二发光器件的整体亮度相等，提升了对应显示装置的显示效果。\n\n[0061]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0062]以上对本申请实施例所提供的一种背光模组和显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种背光模组和显示装置。\n\n背景技术\n\n[0002]Mini-LED背光因其尺寸较小，可实现超薄及多分区驱动等特点，作为液晶显示面板的背光光源得到较多应用。现有大尺寸显示装置采用的Mini-LED背光模组通常采用多块背板拼接而成，但由于相邻背板间的拼接区域Mini-LED的间距大于面内Mini-LED的间距，会造成拼接区域整体亮度低于面内，影响显示效果。\n\n[0003]因此，现有的Mini LED背光模组存在拼接区域亮度较低的技术问题，需要改进。\n\n发明内容\n\n[0004]本申请实施例提供一种背光模组和显示装置，用以缓解现有的Mini LED背光模组中拼接区域亮度较低的技术问题。\n\n[0005]本申请提供一种背光模组，包括拼接的多个背板，所述背板中设置有阵列排布的多个发光器件，所述发光器件与电源高电位信号输入端和电源低电位信号输入端电连接，用于在电源高电位信号和电源低电位信号的控制下发光，其中，所述发光器件包括位于相邻背板拼接区域的第一发光器件、以及位于所述背板其他区域的第二发光器件，至少一个背板中，所述第一发光器件与对应电源高电位信号输入端之间的第一电阻，小于所述第二发光器件与对应电源高电位信号输入端之间的第二电阻。\n\n[0006]在本申请的背光模组中，所述多个背板分别通过印刷电路板与对应的驱动芯片电连接，所述第一电阻和所述第二电阻均为设置在所述印刷电路板中的外加电阻。\n\n[0007]在本申请的背光模组中，所述第一电阻为可变电阻，所述第二电阻为固定电阻。\n\n[0008]在本申请的背光模组中，所述驱动芯片用于在所述第一发光器件工作阶段，控制调节所述第一电阻的实际接入阻值。\n\n[0009]在本申请的背光模组中，所述驱动芯片用于，根据所述拼接区域和所述其他区域的亮度差，从本地存储的电阻补偿对照表中查询得到所述亮度差对应的电阻补偿值，将所述第二电阻的阻值与所述电阻补偿值相减得到所述第一电阻的阻值。\n\n[0010]在本申请的背光模组中，所述驱动芯片用于，根据所述拼接区域和所述其他区域的亮度差，计算得到所述亮度差对应的电阻补偿值，将所述第二电阻的阻值与所述电阻补偿值相减得到所述第一电阻的阻值。\n\n[0011]在本申请的背光模组中，所述第一发光器件与对应电源高电位信号输入端之间连接线路的电阻形成所述第一电阻，所述第一发光器件与对应电源高电位信号输入端之间连接线路的电阻形成所述第二电阻。\n\n[0012]在本申请的背光模组中，所述背板中，同一列发光器件连接同一条电源高电位信号线，所述电源高电位信号线包括面内走线和扇出走线，所述第一发光器件对应的扇出走线宽度，大于所述第二发光器件对应的扇出走线宽度。\n\n[0013]在本申请的背光模组中，相邻的两个背板中，任一背板对应的第一电阻的阻值均小于第二电阻的阻值。\n\n[0014]在本申请的背光模组中，所述两个背板对应的第一电阻的阻值相等。\n\n[0015]在本申请的背光模组中，相邻的两个背板中，其中一个背板对应的第一电阻的阻值小于第二电阻的阻值，另一个背板的第一电阻的阻值等于第二电阻的阻值。\n\n[0016]在本申请的背光模组中，所述背板中，各发光器件对应的电源低电位信号均相等。\n\n[0017]在本申请的背光模组中，所述背板还包括驱动所述发光器件发光的背光驱动电路，所述背光驱动电路包括：\n\n[0018]数据信号输入模块，用于在扫描信号的控制下输入数据信号；\n\n[0019]驱动模块，与所述数据信号输入模块连接，用于在所述数据信号和所述电源高电位信号的控制下，驱动所述发光器件发光；\n\n[0020]存储模块，与所述数据信号输入模块和所述驱动模块连接，用于存储所述数据信号。\n\n[0021]在本申请的背光模组中，所述发光器件包括串联的多个Mini LED灯。\n\n[0022]本申请提供一种显示装置，包括液晶显示面板和背光模组，所述背光模组包括拼接的多个背板，所述背板中设置有阵列排布的多个发光器件，所述发光器件与电源高电位信号输入端和电源低电位信号输入端电连接，用于在电源高电位信号和电源低电位信号的控制下发光，其中，所述发光器件包括位于相邻背板拼接区域的第一发光器件、以及位于所述背板其他区域的第二发光器件，至少一个背板中，所述第一发光器件与对应电源高电位信号输入端之间的第一电阻，小于所述第二发光器件与对应电源高电位信号输入端之间的第二电阻。\n\n[0023]有益效果：本申请提供一种背光模组和显示装置，背光模组包括拼接的多个背板，所述背板中设置有阵列排布的多个发光器件，所述发光器件与电源高电位信号输入端和电源低电位信号输入端电连接，用于在电源高电位信号和电源低电位信号的控制下发光，其中，所述发光器件包括位于相邻背板拼接区域的第一发光器件、以及位于所述背板其他区域的第二发光器件，至少一个背板中，所述第一发光器件与对应电源高电位信号输入端之间的第一电阻，小于所述第二发光器件与对应电源高电位信号输入端之间的第二电阻。本申请通过将第一电阻的阻值设置为小于第二电阻阻值，使得电源高电位信号经过第一电阻后的压降小于经过第二电阻后的压降，第一发光器件两端的电压差大于第二发光器件两端的电压差，对应的第一发光器件的亮度大于第二发光器件亮度，从而使得拼接区域中间距较大的第一发光器件的整体亮度与其他区域中间距较小的第二发光器件的整体亮度相等，提升了对应显示装置的显示效果。\n\n附图说明\n\n[0024]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0025]图1为本申请实施例提供的背光模组中电源高电位信号的第一种输入方式示意图。\n\n[0026]图2为本申请实施例提供的背光模组中电源高电位信号的第二种输入方式示意图。\n\n[0027]图3为本申请实施例提供的背光模组中电源高电位信号线的分布示意图\n\n[0028]图4为本申请实施例提供的背光模组中背光驱动电路的结构示意图。\n\n[0029]图5为本申请实施例提供的显示装置的结构示意图。\n\n具体实施方式\n\n[0030]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0031]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0032]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0033]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0034]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0035]本申请实施例提供一种背光模组和显示装置，用以缓解现有的Mini LED背光模组中拼接区域亮度较低的技术问题。\n\n[0036]本申请提供一种背光模组，包括拼接的多个背板，背板中设置有阵列排布的多个发光器件，发光器件与电源高电位信号输入端和电源低电位信号输入端电连接，用于在电源高电位信号和电源低电位信号的控制下发光，其中，发光器件包括位于相邻背板拼接区域的第一发光器件、以及位于背板其他区域的第二发光器件，至少一个背板中，第一发光器件与对应电源高电位信号输入端之间的第一电阻，小于第二发光器件与对应电源高电位信号输入端之间的第二电阻。\n\n[0037]如图1所示，本申请的背光模组为中大尺寸的液晶显示面板提供背光，背光模组使用多个背板10进行拼接，背板10上设置有阵列排布的多个发光器件100，每个发光器件100又可以包括串联设置的多个Mini LED灯或Micro LED灯。每块背板10中的背光驱动电路对该背板10中的发光器件100进行单独驱动，单独控制发光，单独为液晶显示面板每个分区内的像素提供背光，相对于采用整面驱动的背光模组，分区驱动的背光模组亮度控制更加灵活，发光效果更好。\n\n[0038]位于相邻背板10拼接区域11内的发光器件100为第一发光器件110，位于其他区域12内的发光器件100为第二发光器件120。由于背光模组的采用多个背板10拼接而成，受制造工艺限制，相邻的两个背板10中位于拼接区域11内的两列第一发光器件110的间距a，大于位于其他区域12内任意相邻列第二发光器件120的间距b，因此，在第一发光器件110和第二发光器件120的发光亮度相同时，拼接区域11内不同列第一发光器件110混光后的整体亮度较低，而其他区域12内不同列第二发光器件120混光后的整体亮度较低，从而在拼接区域11内会出现拼缝暗影，后续给液晶显示面板提供背光时，会影响液晶显示面板的显示效果。\n\n[0039]如图4所示，背板10中包括阵列设置的多个发光器件100，每个发光器件100均有背光驱动电路进行驱动，背光驱动电路包括数据信号输入模块101、驱动模块102和存储模块103，数据信号输入模块101用于在扫描信号Scan的控制下输入数据信号Data；驱动模块102与数据信号输入模块101连接，用于在数据信号Data和电源高电位信号VDD的控制下，驱动发光器件100发光；存储模块103与数据信号输入模块101和驱动模块102连接，用于存储数据信号Data。\n\n[0040]具体地，数据信号输入模块101包括开关晶体管T2，驱动模块102包括驱动晶体管T1，存储模块103包括存储电容Cs，开关晶体管T2的栅极接入扫描信号Scan，开关晶体管T2的第一电极接入数据信号Data，开关晶体管T2的第二电极与驱动晶体管T1的栅极、以及存储电容Cs的第一极板连接，存储电容Cs的第二极板接地，驱动晶体管T1的第一电极接入电源高电位信号VDD，驱动晶体管T1的第二电极接入电源低电位信号VSS。\n\n[0041]发光器件100的工作阶段包括数据写入阶段t1和发光阶段t2，在数据写入阶段t1，扫描信号Scan为高电位，开关晶体管T2打开，将数据信号Data输入给驱动晶体管T1的栅极，且存储在存储电容Cs中，驱动晶体管T1打开，使发光器件100发光；在发光阶段t2，扫描信号Scan为低电位，开关晶体管T2关闭，存储电容Cs可以维持驱动晶体管T1的栅极电位，使得发光器件100继续发光。\n\n[0042]发光器件100的发光亮度与施加在发光器件100两端电压的压差相关，压差越大，发光器件100的发光亮度越大。\n\n[0043]如图1所示，在本申请中，多个背板10分别通过印刷电路板20与对应的驱动芯片30连接，每个背板10中，同一列发光器件100连接同一条电源高电位信号线，驱动芯片30中的电源高电位信号输入端通过电源高电位信号线向对应列发光器件100输入的电源高电位信号VDD。在背板10中的发光器件100工作时，整个背板10中所有发光器件100输入的电源高电位信号VDD均相等，输入的电源低电位信号VSS也相等。\n\n[0044]至少一个背板10中，第一发光器件110与对应电源高电位信号输入端之间的第一电阻，小于第二发光器件120与对应电源高电位信号输入端之间的第二电阻。如图1所示，第一电阻R1和第二电阻R2均为设置在印刷电路板20中的外加电阻，且第一电阻R1为可变电阻，第二电阻R2为固定电阻。\n\n[0045]由于每个背板10中，同一列发光器件100连接同一条电源高电位信号线，电源高电位信号线向对应列发光器件100输入相同的电源高电位信号VDD。因此，在减小拼接区域11内发光器件100与对应电源高电位信号输入端之间的电阻值时，第一发光器件110的亮度改变总是以列为单位改变。\n\n[0046]在发光器件100工作阶段，驱动芯片30控制调节第一电阻R1的阻值，使得第一电阻R1的阻值小于第二电阻R2的阻值。背板10中每列发光器件100输入的电源高电位信号VDD和电源低电位信号VSS均相等，在发光器件100与电源高电位信号输入端之间连接线路上增加第一电阻R1和第二电阻R2后，会起到分压作用，使得最终发光器件100靠近外加电阻一侧的电压减小，而由于第一电阻R1的阻值小于第二电阻R2的阻值，使得电源高电位信号VDD经过第一电阻R1后的压降小于经过第二电阻R2后的压降，则第一发光器件110两端的电压差大于第二发光器件120两端的电压差，对应的第一发光器件110的亮度大于第二发光器件120的亮度，从而使得拼接区域11中间距较大的第一发光器件110的整体亮度与其他区域12中间距较小的第二发光器件120的整体亮度相等，进而消除了拼缝暗影，提升了对应显示装置的显示效果。\n\n[0047]驱动芯片30在确定第一电阻R1的具体数值时，可以有两种方式。\n\n[0048]在一种实施例中，驱动芯片30用于，根据拼接区域11和其他区域12的亮度差，从本地存储的电阻补偿对照表中查询得到亮度差对应的电阻补偿值，将第二电阻R2的阻值与电阻补偿值相减得到第一电阻R1的阻值。电阻补偿对照表预先存储在驱动芯片30中，表中包括多个亮度或亮度范围，对应每个亮度值或亮度范围值，均有一个对应的电阻补偿值，在获取到拼接区域11和其他区域12的亮度差后，从电阻补偿对照表中查找到该亮度差对应的电阻补偿值，则将第二电阻R2的阻值与电阻补偿值的数值进行相减，根据相减后的数值调节第一电阻R1实际接入到线路中的阻值，可以使第一发光器件110的发光亮度增加，且增加的发光亮度刚好可以补偿前述的亮度差。使用查表的方式得到电阻补偿值，较为方便快捷。\n\n[0049]在一种实施例中，驱动芯片30用于，根据拼接区域11和其他区域12的亮度差，计算得到亮度差对应的电阻补偿值，将第二电阻R2的阻值与电阻补偿值相减得到第一电阻R1的阻值。对应每个亮度值或亮度范围值，均有一个对应的电阻补偿值，在获取到拼接区域11和其他区域12的亮度差后，驱动芯片30直接计算得到该亮度差对应的电阻补偿值，则将第二电阻R2的阻值与电阻补偿值的数值进行相减，根据相减后的数值调节第一电阻R1实际接入到线路中的阻值，可以使第一发光器件110的发光亮度增加，且增加的发光亮度刚好可以补偿前述的亮度差。使用计算的方式得到电阻补偿值，较为准确。\n\n[0050]在一种实施例中，相邻的两个背板10中，任一背板10对应的第一电阻R1的阻值均小于第二电阻R2的阻值。此时，如图1所示，每个拼接区域11内的两列第一发光器件100的发光亮度都得到提升，因此拼接区域11内的整体亮度提升较多，改善拼缝暗影的效果较好。当两个相邻背板10对应的第一电阻R1的阻值相等时，混光的效果较为均匀，亮度提升的效果更好。\n\n[0051]在一种实施例中，相邻的两个背板10中，其中一个背板10对应的第一电阻R1的阻值小于第二电阻R2的阻值，另一个背板的第一电阻R1的阻值等于第二电阻R2的阻值。如图2所示，以两个背板10进行拼接为例，左边背板10第一电阻R1的阻值小于第二电阻R2的阻值，右边背板10在拼接区域11和其他区域12的阻值均相等，相当于第一电阻R1的阻值等于第二电阻R2的阻值。此时，在每个拼接区域11内的两列第一发光器件110中，其中一列第一发光器件110的亮度不变，另一列第一发光器件110的亮度增大，因此也可以在一定程度上起到提升拼接区域11整体亮度的作用。在拼接区域11与其他区域12亮度差异较小的场景下，可以仅减小一列第一发光器件110对应的第一电阻R1的阻值来提升亮度，相对于图1所对应的实施例，本方法在起到提升亮度的同时，带来的能耗增加较少，成本较低。\n\n[0052]在上述实施例中，均通过在发光器件100和电源高电位信号输入端之间外加电阻来增大第一发光器件110的亮度，此外，也可以通过对原有线路进行调整，同样可起到相同的作用。\n\n[0053]在一种实施例中，第一发光器件110与对应电源高电位信号输入端之间连接线路的电阻形成第一电阻R1，第一发光器件120与对应电源高电位信号输入端之间连接线路的电阻形成第二电阻R2。\n\n[0054]具体地，如图3所示，背板10中同一列发光器件100连接同一条电源高电位信号线，电源高电位信号线包括面内走线111和扇出走线112，第一发光器件110对应的扇出走线112宽度，大于第二发光器件120对应的扇出走线112宽度。电源高电位信号线在面内的部分为面内走线111，各面内走线111相互平行，且各自连接一列发光器件100，各面内走线111在背板10下部再经由扇出走线112与连接端子40连接，将第一发光器件110对应的扇出走线112宽度设置为大于第二发光器件120对应的扇出走线112宽度，则第一发光器件110对应的扇出走线112阻值会小于第二发光器件120对应的扇出走线112阻值，最终使得第一发光器件110与电源高电位信号输入端之间的第一电阻R1阻值小于第二发光器件120与电源高电位信号输入端之间的第二电阻R2阻值，从而也可以起到增大第一发光器件110亮度的目的。\n\n[0055]此外，还可以直接将第一发光器件110型号变更，在拼接区域11设置相同电压下亮度更亮的灯型，其他区域12设置亮度稍暗的灯型，也可以起到改善拼缝暗线的作用。在灯型更换的基础上，再叠加上述任一实施例中电阻值的差异化设置，改善拼缝暗线的作用更佳。\n\n[0056]本申请通过上述方式，将第一电阻R1的阻值设置为小于第二电阻R2的阻值，使得电源高电位信号经过第一电阻R1后的压降小于经过第二电阻R2后的压降，第一发光器件110两端的电压差大于第二发光器件120两端的电压差，对应的第一发光器件110的亮度大于第二发光器件120亮度，从而使得拼接区域11中间距较大的第一发光器件110的整体亮度与其他区域12中间距较小的第二发光器件120的整体亮度相等，提升了对应显示装置的显示效果。\n\n[0057]如图5所示，本申请还提供一种显示装置，包括液晶显示面板50和背光模组，该背光模组包括拼接的多个背板10、胶框301、扩散板302、反射片303和光学膜片304，背板10上设置有阵列排布的多个发光器件100。液晶显示面板50通过粘结层(图未示出)固定在背光模组的胶框301上，背光模组中设置在背板201上的发光器件110发出的光线21，经由扩散板302、反射片303和光学膜片304后，照射到液晶显示面板50上，光线21先通过液晶显示面板50的下偏光片变成偏振光，液晶显示面板50通过TFT的开关作用，给每个像素分别输入不同大小的数据信号电压，液晶分子在不同电压下旋转的状态不同，因此对偏振光的透过程度也不同，最后经由上偏光片出射的光线亮度也不同，以此来实现多灰阶的画面显示。\n\n[0058]在本申请的显示装置中，背光模组为上述任一实施例所述的背光模组，通过将第一电阻的阻值设置为小于第二电阻阻值，使得电源高电位信号经过第一电阻后的压降小于经过第二电阻后的压降，第一发光器件两端的电压差大于第二发光器件两端的电压差，对应的第一发光器件的亮度大于第二发光器件亮度，从而使得拼接区域中间距较大的第一发光器件的整体亮度与其他区域中间距较小的第二发光器件的整体亮度相等，提升了显示装置的显示效果。\n\n[0059]根据以上实施例可知：\n\n[0060]本申请提供一种背光模组和显示装置，背光模组包括拼接的多个背板，背板中设置有阵列排布的多个发光器件，发光器件与电源高电位信号输入端和电源低电位信号输入端电连接，用于在电源高电位信号和电源低电位信号的控制下发光，其中，发光器件包括位于相邻背板拼接区域的第一发光器件、以及位于背板其他区域的第二发光器件，至少一个背板中，第一发光器件与对应电源高电位信号输入端之间的第一电阻，小于第二发光器件与对应电源高电位信号输入端之间的第二电阻。本申请通过将第一电阻的阻值设置为小于第二电阻阻值，使得电源高电位信号经过第一电阻后的压降小于经过第二电阻后的压降，第一发光器件两端的电压差大于第二发光器件两端的电压差，对应的第一发光器件的亮度大于第二发光器件亮度，从而使得拼接区域中间距较大的第一发光器件的整体亮度与其他区域中间距较小的第二发光器件的整体亮度相等，提升了对应显示装置的显示效果。\n\n[0061]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0062]以上对本申请实施例所提供的一种背光模组和显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10850, 23904, '技术领域\n\n[0001]本申请涉及显示领域，特别涉及一种显示装置。\n\n背景技术\n\n[0002]随着科技的发展，移动电子设备的外观发生了巨大变化，柔性屏以其独特的特性和巨大的潜力而备受关注。柔性屏相较于传统屏幕而言，具有柔韧性强和可弯曲的特点，能够减轻设备意外损伤的程度，耐用程度远高于其他屏幕。\n\n[0003]现有的柔性屏包括可折叠和可卷曲显示屏，上述两种显示屏虽然在一定程度上减小了面板的尺寸，但是仍占据较大的空间。\n\n[0004]因此，亟需一种显示装置以解决上述技术问题。\n\n发明内容\n\n[0005]本申请提供一种显示装置，以解决现有柔性屏占据较大空间的技术问题。\n\n[0006]为解决上述问题，本申请提供的技术方案如下：\n\n[0007]本申请提出了一种显示装置，其中，所述显示装置包括壳体组件及位于所述壳体组件内的柔性显示屏与传动组件；\n\n[0008]当所述显示装置处于小屏状态时，所述柔性显示屏通过所述传动组件以任意角度弯折以及收纳于所述壳体组件内；当所述显示装置处于大屏状态时，所述柔性显示屏位于所述壳体组件外。\n\n[0009]在本申请的显示装置中，所述柔性显示屏包括衬底、位于所述衬底上的发光器件层、及位于所述发光器件层上的盖板层，所述衬底、所述发光器件层及所述盖板层对应的透光区由透明材料构成。\n\n[0010]在本申请的显示装置中，所述发光器件层包括位于所述衬底上的阳极层，所述阳极层至少包括第一保护层、位于所述第一保护层上的传输层、位于所述传输层上的第二保护层，所述第二保护层与所述第一保护层将所述传输层全覆盖。\n\n[0011]在本申请的显示装置中，所述第一保护层及所述第二保护层的材料为氧化铟锡，所述传输层的材料为银，所述传输层的厚度为90nm～110nm。\n\n[0012]在本申请的显示装置中，所述发光器件层还包括位于所述阳极层上的发光层，所述发光层包括至少三个微型发光二极管。\n\n[0013]在本申请的显示装置中，所述发光器件层还包括位于所述发光层上的阴极层，所述阴极层由至少两种透明金属构成。\n\n[0014]在本申请的显示装置中，所述阴极层由金属银和金属镁构成，所述金属银和所述金属镁的质量比为8:1。\n\n[0015]在本申请的显示装置中，所述盖板层包括第一柔性层及位于所述第一柔性层上的硬质层，所述第一柔性层与所述硬质层通过沉积工艺形成于所述发光器件层上，所述盖板层的光透过率为85％～95％。\n\n[0016]在本申请的显示装置中，所述显示面板还包括位于所述发光器件层与所述盖板层之间的抗反射层，所述抗反射层通过沉积工艺形成于所述发光器件层上。\n\n[0017]在本申请的显示装置中，所述壳体组件包括第一壳体及第二壳体，当所述显示装置小屏显示时，所述柔性显示屏的第一部分收纳于所述第一壳体内，以及所述柔性显示屏的第二部分收纳于所述第二壳体内。\n\n[0018]有益效果：本申请利用柔性材料形成柔性显示屏使得柔性显示屏能以任意角度弯折，以及通过壳体组件内的传动组件将柔性显示屏收纳，以实现显示装置的大屏显示及小屏显示，大大缩小了所述柔性显示屏的体积，提高了产品的携带便捷性。\n\n附图说明\n\n[0019]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0020]图1为本申请显示装置小屏显示的结构图；\n\n[0021]图2为本申请显示装置大屏显示的结构图；\n\n[0022]图3为本申请显示装置中柔性显示屏的膜层结构图；\n\n[0023]图4为本申请柔性显示屏中阳极层的结构图；\n\n[0024]图5为本申请显示装置的第一种剖面图；\n\n[0025]图6为本申请显示装置的第二种剖面图。\n\n具体实施方式\n\n[0026]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0027]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0028]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0029]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0030]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0031]柔性屏相较于传统屏幕而言，具有柔韧性强和可弯曲的特点，能够减轻设备意外损伤的程度，耐用程度远高于其他屏幕。现有的柔性屏虽然在一定程度上减小了面板的尺寸，但是仍占据较大的空间。本申请提出了一种显示装置以解决上述技术问题。\n\n[0032]请参阅图1～图6，所述显示装置100包括壳体组件10及位于所述壳体组件10内的柔性显示屏20与传动组件30；\n\n[0033]当所述显示装置100处于小屏状态时，所述柔性显示屏20通过所述传动组件30以任意角度弯折以及收纳于所述壳体组件10内；当所述显示装置100处于大屏状态时，所述柔性显示屏20位于所述壳体组件10外。\n\n[0034]本申请利用柔性材料形成柔性显示屏20使得柔性显示屏20能以任意角度弯折，以及通过壳体组件10内的传动组件30将柔性显示屏20收纳，以实现显示装置100的大屏显示及小屏显示，大大缩小了所述柔性显示屏20的体积，提高了产品的携带便捷性。\n\n[0035]现结合具体实施例对本申请的技术方案进行描述。\n\n[0036]请参阅图1～图2，所述壳体组件10可以包括第一壳体101及第二壳体102，当所述显示装置100小屏显示时，所述柔性显示屏20的第一部分收纳于所述第一壳体101内，以及所述柔性显示屏20的第二部分收纳于所述第二壳体102内。所述第一壳体101及所述第二壳体102可以作为驱动端向左右两侧移动，其通过所述第一壳体101及所述第二壳体102向两侧的移动距离决定柔性显示屏20的大小，其可以实现柔性显示屏20的任意大小。\n\n[0037]另外，本申请的所述柔性显示屏20的任意位置可以实现任意角度的折叠，例如本申请的柔性显示屏20可以像布匹一样的折叠等。\n\n[0038]在本申请的显示装置100中，所述柔性显示屏20包括衬底21、位于所述衬底21上的发光器件层22、及位于所述发光器件层22上的盖板层25。\n\n[0039]在本实施例中，所述衬底21、所述发光器件层22及所述盖板层25对应的透光区由透明材料构成。\n\n[0040]请参阅图3，所述衬底21包括柔性基底211及位于所述柔性基底211上的驱动电路层。在本实施例中，所述柔性基底211由透明材料构成，例如所述柔性基底211可以为透明的聚酰亚胺等材料。\n\n[0041]所述驱动电路层可以包括多个薄膜晶体管。所述薄膜晶体管可以为蚀刻阻挡型、背沟道蚀刻型或顶栅薄膜晶体管型等结构，具体没有限制。例如顶栅薄膜晶体管型的所述薄膜晶体管可以包括位于所述柔性基底211上的缓冲层212、位于所述缓冲层212上的有源层213、位于所述有源层213上的栅绝缘层214、位于所述栅绝缘层214上的栅极层215、位于所述栅极层215上的间绝缘层216、位于所述间绝缘层216上的源漏极层217、位于所述源漏极层217上的平坦层218。\n\n[0042]在本申请的显示装置100中，所述发光器件层22包括位于所述平坦层218上的阳极层221、位于所述阳极层221上的发光层222、及位于所述发光层222上的阴极层223。\n\n[0043]请参阅图4，所述阳极层221至少包括第一保护层2211、位于所述第一保护层2211上的传输层2212、位于所述传输层2212上的第二保护层2213，所述第二保护层2213与所述第一保护层2211将所述传输层全覆盖。\n\n[0044]本实施例中的阳极层221采用三层金属进行数据信号传输，上下两层保护层用于避免中间的传输层被空气氧化，因此第一保护层2211及第二保护层2213一般选择抗氧化性能较好的金属，而传输层2212由于需要进行数据传输因此其金属需要为导电性能好。另外，由于本申请的柔性显示屏20为透明属性，因此第一保护层2211、第二保护层2213及传输层2212需要为透明材料。\n\n[0045]在本实施例中，所述第一保护层2211及所述第二保护层2213的材料为氧化铟锡，所述传输层2212的材料为银。\n\n[0046]在本实施例中，为了提高产品的柔性，应尽量减小膜层的厚度，所述传输层2212的厚度为90nm～110nm。\n\n[0047]请参阅图3，所述发光层222包括至少三个微型发光二极管，一所述微型发光二极管对应一个子像素。所述微型发光二极管可以为发白光的Micro-LED，或者发红绿蓝中任一中颜色的Micro-LED，本申请不作具体限定。\n\n[0048]在本实施例中，所述微型发光二极管主要通过巨量转印技术形成，即在外部支撑工艺中形成所述微型发光二极管，然后将制备好的所述微型发光二极管转移到阵列基板上对应的子像素内。\n\n[0049]请参阅图3，所述阴极层223可以由至少两种透明金属构成，即在保证阴极层223透明的情况下，还要保证阴极层223的柔性。\n\n[0050]在本实施例中，所述阴极层223可以由金属银和金属镁构成，所述金属银和所述金属镁的质量比为8:1，或者可以继续提高银的比例。本实施例中金属镁的加入是为了增加材料的柔性，而由于阴极层223在弯折时，阴极层223的最外侧最先受力以及该区域的受到的弯折力最大，该区域最易断裂，因此在阴极层223的垂直方向上，即阴极层223可以在与相邻膜层接触区域掺杂金属银。或者，在相邻膜层至所述阴极层223的中心的方向上，金属镁的含量逐渐减少。\n\n[0051]请参阅图3，所述显示面板还包括位于所述发光器件层22上的薄膜封装层23。所述薄膜封装层23至少包括叠层的一无机层及一有机层。在本实施例中，所述薄膜封装层23可以包括位于所述阴极层223上的第一无机层231、位于第一无机层231上的第一有机层232、及位于所述第一有机层232上的第二无机层233。所述第一无机层231及所述第二无机层233通过化学沉积形成，所述第一有机层232可以通过喷墨打印形成。\n\n[0052]请参阅图3，所述显示面板还包括位于所述薄膜封装层23上的抗反射层24。本申请的所述抗反射层24主要用于将外界的白光反射，避免外界的白光进入面板内部影响产品的显示效果。\n\n[0053]在本实施例中，所述抗反射层24用于替换现有技术中的偏光片层。偏光片层一般是通过光学胶粘贴至膜层上，因此偏光片的设置需要自身的厚度加上现有光学胶的厚度。另外，偏光片需要进行柔性处理，工艺较为复杂。而本申请通过在薄膜封装层23上利用沉积工艺直接形成，不仅减小了原有偏光片层的厚度，还增加了该膜层的柔性。\n\n[0054]在本实施例中，所述抗反射层24的位置还可以限定于所述发光器件层22的表面。\n\n[0055]请参阅图3，所述盖板层25可以包括第一柔性层251及位于所述第一柔性层251上的硬质层252，所述第一柔性层251与所述硬质层252通过沉积工艺形成于所述发光器件层22上。与上述抗反射层24类似，本实施例通过沉积工艺直接形成所述盖板层25，既可以减小盖板层25的厚度，也可以增加盖板层25的柔性。\n\n[0056]在本实施例中，所述第一柔性层251可以为透明的聚酰亚胺。\n\n[0057]在本实施例中，所述盖板层25的光透过率为85％～95％。\n\n[0058]在本申请的显示装置100中，所述传动组件30包括至少一个卷轴31，所述柔性显示屏20卷曲在所述卷轴31上。\n\n[0059]请参阅图5，所述传动组件30包括一个卷轴31，当所述显示装置100小屏显示时，所述柔性显示屏20卷曲在所述卷轴31上。或者，如图6所示，当所述传动组件30包括三个卷轴31时，所述柔性显示屏20通过三个卷轴31的错位设置使得所述柔性显示屏20多次折转卷曲在所述卷轴31上。\n\n[0060]在图5～图6中，所述显示装置100还包括与所述柔性显示屏20连接的拉伸层(未画出)，所述拉伸层为无效显示区。所述拉伸层的材料可以为耐拉伸的sus金属材料或非晶材料等。当所述拉伸层的材料为sus金属材料时，所述拉伸层的厚度可以为25～35微米。\n\n[0061]本申请提出了一种显示装置，所述显示装置包括壳体组件及位于所述壳体组件内的柔性显示屏与传动组件；当所述显示装置处于小屏状态时，所述柔性显示屏通过所述传动组件以任意角度弯折以及收纳于所述壳体组件内；当所述显示装置处于大屏状态时，所述柔性显示屏位于所述壳体组件外。本申请利用柔性材料形成柔性显示屏使得柔性显示屏能以任意角度弯折，以及通过壳体组件内的传动组件将柔性显示屏收纳，以实现显示装置的大屏显示及小屏显示，大大缩小了所述柔性显示屏的体积，提高了产品的携带便捷性。\n\n[0062]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0063]以上对本申请实施例所提供的一种显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示领域，特别涉及一种显示装置。\n\n背景技术\n\n[0002]随着科技的发展，移动电子设备的外观发生了巨大变化，柔性屏以其独特的特性和巨大的潜力而备受关注。柔性屏相较于传统屏幕而言，具有柔韧性强和可弯曲的特点，能够减轻设备意外损伤的程度，耐用程度远高于其他屏幕。\n\n[0003]现有的柔性屏包括可折叠和可卷曲显示屏，上述两种显示屏虽然在一定程度上减小了面板的尺寸，但是仍占据较大的空间。\n\n[0004]因此，亟需一种显示装置以解决上述技术问题。\n\n发明内容\n\n[0005]本申请提供一种显示装置，以解决现有柔性屏占据较大空间的技术问题。\n\n[0006]为解决上述问题，本申请提供的技术方案如下：\n\n[0007]本申请提出了一种显示装置，其中，所述显示装置包括壳体组件及位于所述壳体组件内的柔性显示屏与传动组件；\n\n[0008]当所述显示装置处于小屏状态时，所述柔性显示屏通过所述传动组件以任意角度弯折以及收纳于所述壳体组件内；当所述显示装置处于大屏状态时，所述柔性显示屏位于所述壳体组件外。\n\n[0009]在本申请的显示装置中，所述柔性显示屏包括衬底、位于所述衬底上的发光器件层、及位于所述发光器件层上的盖板层，所述衬底、所述发光器件层及所述盖板层对应的透光区由透明材料构成。\n\n[0010]在本申请的显示装置中，所述发光器件层包括位于所述衬底上的阳极层，所述阳极层至少包括第一保护层、位于所述第一保护层上的传输层、位于所述传输层上的第二保护层，所述第二保护层与所述第一保护层将所述传输层全覆盖。\n\n[0011]在本申请的显示装置中，所述第一保护层及所述第二保护层的材料为氧化铟锡，所述传输层的材料为银，所述传输层的厚度为90nm～110nm。\n\n[0012]在本申请的显示装置中，所述发光器件层还包括位于所述阳极层上的发光层，所述发光层包括至少三个微型发光二极管。\n\n[0013]在本申请的显示装置中，所述发光器件层还包括位于所述发光层上的阴极层，所述阴极层由至少两种透明金属构成。\n\n[0014]在本申请的显示装置中，所述阴极层由金属银和金属镁构成，所述金属银和所述金属镁的质量比为8:1。\n\n[0015]在本申请的显示装置中，所述盖板层包括第一柔性层及位于所述第一柔性层上的硬质层，所述第一柔性层与所述硬质层通过沉积工艺形成于所述发光器件层上，所述盖板层的光透过率为85％～95％。\n\n[0016]在本申请的显示装置中，所述显示面板还包括位于所述发光器件层与所述盖板层之间的抗反射层，所述抗反射层通过沉积工艺形成于所述发光器件层上。\n\n[0017]在本申请的显示装置中，所述壳体组件包括第一壳体及第二壳体，当所述显示装置小屏显示时，所述柔性显示屏的第一部分收纳于所述第一壳体内，以及所述柔性显示屏的第二部分收纳于所述第二壳体内。\n\n[0018]有益效果：本申请利用柔性材料形成柔性显示屏使得柔性显示屏能以任意角度弯折，以及通过壳体组件内的传动组件将柔性显示屏收纳，以实现显示装置的大屏显示及小屏显示，大大缩小了所述柔性显示屏的体积，提高了产品的携带便捷性。\n\n附图说明\n\n[0019]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0020]图1为本申请显示装置小屏显示的结构图；\n\n[0021]图2为本申请显示装置大屏显示的结构图；\n\n[0022]图3为本申请显示装置中柔性显示屏的膜层结构图；\n\n[0023]图4为本申请柔性显示屏中阳极层的结构图；\n\n[0024]图5为本申请显示装置的第一种剖面图；\n\n[0025]图6为本申请显示装置的第二种剖面图。\n\n具体实施方式\n\n[0026]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0027]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0028]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0029]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0030]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0031]柔性屏相较于传统屏幕而言，具有柔韧性强和可弯曲的特点，能够减轻设备意外损伤的程度，耐用程度远高于其他屏幕。现有的柔性屏虽然在一定程度上减小了面板的尺寸，但是仍占据较大的空间。本申请提出了一种显示装置以解决上述技术问题。\n\n[0032]请参阅图1～图6，所述显示装置100包括壳体组件10及位于所述壳体组件10内的柔性显示屏20与传动组件30；\n\n[0033]当所述显示装置100处于小屏状态时，所述柔性显示屏20通过所述传动组件30以任意角度弯折以及收纳于所述壳体组件10内；当所述显示装置100处于大屏状态时，所述柔性显示屏20位于所述壳体组件10外。\n\n[0034]本申请利用柔性材料形成柔性显示屏20使得柔性显示屏20能以任意角度弯折，以及通过壳体组件10内的传动组件30将柔性显示屏20收纳，以实现显示装置100的大屏显示及小屏显示，大大缩小了所述柔性显示屏20的体积，提高了产品的携带便捷性。\n\n[0035]现结合具体实施例对本申请的技术方案进行描述。\n\n[0036]请参阅图1～图2，所述壳体组件10可以包括第一壳体101及第二壳体102，当所述显示装置100小屏显示时，所述柔性显示屏20的第一部分收纳于所述第一壳体101内，以及所述柔性显示屏20的第二部分收纳于所述第二壳体102内。所述第一壳体101及所述第二壳体102可以作为驱动端向左右两侧移动，其通过所述第一壳体101及所述第二壳体102向两侧的移动距离决定柔性显示屏20的大小，其可以实现柔性显示屏20的任意大小。\n\n[0037]另外，本申请的所述柔性显示屏20的任意位置可以实现任意角度的折叠，例如本申请的柔性显示屏20可以像布匹一样的折叠等。\n\n[0038]在本申请的显示装置100中，所述柔性显示屏20包括衬底21、位于所述衬底21上的发光器件层22、及位于所述发光器件层22上的盖板层25。\n\n[0039]在本实施例中，所述衬底21、所述发光器件层22及所述盖板层25对应的透光区由透明材料构成。\n\n[0040]请参阅图3，所述衬底21包括柔性基底211及位于所述柔性基底211上的驱动电路层。在本实施例中，所述柔性基底211由透明材料构成，例如所述柔性基底211可以为透明的聚酰亚胺等材料。\n\n[0041]所述驱动电路层可以包括多个薄膜晶体管。所述薄膜晶体管可以为蚀刻阻挡型、背沟道蚀刻型或顶栅薄膜晶体管型等结构，具体没有限制。例如顶栅薄膜晶体管型的所述薄膜晶体管可以包括位于所述柔性基底211上的缓冲层212、位于所述缓冲层212上的有源层213、位于所述有源层213上的栅绝缘层214、位于所述栅绝缘层214上的栅极层215、位于所述栅极层215上的间绝缘层216、位于所述间绝缘层216上的源漏极层217、位于所述源漏极层217上的平坦层218。\n\n[0042]在本申请的显示装置100中，所述发光器件层22包括位于所述平坦层218上的阳极层221、位于所述阳极层221上的发光层222、及位于所述发光层222上的阴极层223。\n\n[0043]请参阅图4，所述阳极层221至少包括第一保护层2211、位于所述第一保护层2211上的传输层2212、位于所述传输层2212上的第二保护层2213，所述第二保护层2213与所述第一保护层2211将所述传输层全覆盖。\n\n[0044]本实施例中的阳极层221采用三层金属进行数据信号传输，上下两层保护层用于避免中间的传输层被空气氧化，因此第一保护层2211及第二保护层2213一般选择抗氧化性能较好的金属，而传输层2212由于需要进行数据传输因此其金属需要为导电性能好。另外，由于本申请的柔性显示屏20为透明属性，因此第一保护层2211、第二保护层2213及传输层2212需要为透明材料。\n\n[0045]在本实施例中，所述第一保护层2211及所述第二保护层2213的材料为氧化铟锡，所述传输层2212的材料为银。\n\n[0046]在本实施例中，为了提高产品的柔性，应尽量减小膜层的厚度，所述传输层2212的厚度为90nm～110nm。\n\n[0047]请参阅图3，所述发光层222包括至少三个微型发光二极管，一所述微型发光二极管对应一个子像素。所述微型发光二极管可以为发白光的Micro-LED，或者发红绿蓝中任一中颜色的Micro-LED，本申请不作具体限定。\n\n[0048]在本实施例中，所述微型发光二极管主要通过巨量转印技术形成，即在外部支撑工艺中形成所述微型发光二极管，然后将制备好的所述微型发光二极管转移到阵列基板上对应的子像素内。\n\n[0049]请参阅图3，所述阴极层223可以由至少两种透明金属构成，即在保证阴极层223透明的情况下，还要保证阴极层223的柔性。\n\n[0050]在本实施例中，所述阴极层223可以由金属银和金属镁构成，所述金属银和所述金属镁的质量比为8:1，或者可以继续提高银的比例。本实施例中金属镁的加入是为了增加材料的柔性，而由于阴极层223在弯折时，阴极层223的最外侧最先受力以及该区域的受到的弯折力最大，该区域最易断裂，因此在阴极层223的垂直方向上，即阴极层223可以在与相邻膜层接触区域掺杂金属银。或者，在相邻膜层至所述阴极层223的中心的方向上，金属镁的含量逐渐减少。\n\n[0051]请参阅图3，所述显示面板还包括位于所述发光器件层22上的薄膜封装层23。所述薄膜封装层23至少包括叠层的一无机层及一有机层。在本实施例中，所述薄膜封装层23可以包括位于所述阴极层223上的第一无机层231、位于第一无机层231上的第一有机层232、及位于所述第一有机层232上的第二无机层233。所述第一无机层231及所述第二无机层233通过化学沉积形成，所述第一有机层232可以通过喷墨打印形成。\n\n[0052]请参阅图3，所述显示面板还包括位于所述薄膜封装层23上的抗反射层24。本申请的所述抗反射层24主要用于将外界的白光反射，避免外界的白光进入面板内部影响产品的显示效果。\n\n[0053]在本实施例中，所述抗反射层24用于替换现有技术中的偏光片层。偏光片层一般是通过光学胶粘贴至膜层上，因此偏光片的设置需要自身的厚度加上现有光学胶的厚度。另外，偏光片需要进行柔性处理，工艺较为复杂。而本申请通过在薄膜封装层23上利用沉积工艺直接形成，不仅减小了原有偏光片层的厚度，还增加了该膜层的柔性。\n\n[0054]在本实施例中，所述抗反射层24的位置还可以限定于所述发光器件层22的表面。\n\n[0055]请参阅图3，所述盖板层25可以包括第一柔性层251及位于所述第一柔性层251上的硬质层252，所述第一柔性层251与所述硬质层252通过沉积工艺形成于所述发光器件层22上。与上述抗反射层24类似，本实施例通过沉积工艺直接形成所述盖板层25，既可以减小盖板层25的厚度，也可以增加盖板层25的柔性。\n\n[0056]在本实施例中，所述第一柔性层251可以为透明的聚酰亚胺。\n\n[0057]在本实施例中，所述盖板层25的光透过率为85％～95％。\n\n[0058]在本申请的显示装置100中，所述传动组件30包括至少一个卷轴31，所述柔性显示屏20卷曲在所述卷轴31上。\n\n[0059]请参阅图5，所述传动组件30包括一个卷轴31，当所述显示装置100小屏显示时，所述柔性显示屏20卷曲在所述卷轴31上。或者，如图6所示，当所述传动组件30包括三个卷轴31时，所述柔性显示屏20通过三个卷轴31的错位设置使得所述柔性显示屏20多次折转卷曲在所述卷轴31上。\n\n[0060]在图5～图6中，所述显示装置100还包括与所述柔性显示屏20连接的拉伸层(未画出)，所述拉伸层为无效显示区。所述拉伸层的材料可以为耐拉伸的sus金属材料或非晶材料等。当所述拉伸层的材料为sus金属材料时，所述拉伸层的厚度可以为25～35微米。\n\n[0061]本申请提出了一种显示装置，所述显示装置包括壳体组件及位于所述壳体组件内的柔性显示屏与传动组件；当所述显示装置处于小屏状态时，所述柔性显示屏通过所述传动组件以任意角度弯折以及收纳于所述壳体组件内；当所述显示装置处于大屏状态时，所述柔性显示屏位于所述壳体组件外。本申请利用柔性材料形成柔性显示屏使得柔性显示屏能以任意角度弯折，以及通过壳体组件内的传动组件将柔性显示屏收纳，以实现显示装置的大屏显示及小屏显示，大大缩小了所述柔性显示屏的体积，提高了产品的携带便捷性。\n\n[0062]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0063]以上对本申请实施例所提供的一种显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10851, 23905, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种显示装置。\n\n背景技术\n\n[0002]目前主流的显示技术包括LCD(Liquid Crystal Display液晶显示器)和OLED(Organic Light-Emitting Diode有机电激光显示)，其中OLED技术则是采用逐颗的OLED像素主动发光，结合柔性基板，相较而言具有高对比、轻薄、可弯曲、可折叠等优势。而LCD为被动发光技术，通过整面背光结构照射液晶盒实现光线的亮暗控制。柔性LCD实现的关键难题分为低温制程的高透过率驱动背板技术、可弯折柔性Cell精确控制技术、薄型化柔性背光技术等。\n\n[0003]目前柔性驱动背板的材料主要为PI材料，分为黄色PI和透明PI，LCD需求高通过率透明PI。在柔性Cell方面，需要克服由于弯曲过程中Cell gap变化的不一致性以及CF对位偏差所造成的色偏问题，同时除了透明基板的薄型化问题之外，还需要解决上下偏光片的薄型化问题，其中偏光片需要采用补偿膜结构以补偿透明PI相位延迟问题，以上构成Cell薄型化的关键壁垒。在柔性背光方面，传统侧入式背光需要采用导光板结构以横向传导光线。在柔性化方面，传统导光板及其相应膜片结构厚度在0.5mm以上，同时多层堆叠结构不利于弯折应用；另一方面，导光板是通过波导原理进行横向与纵向光线控制，一旦导光板出现弯曲可能会破坏刀光结构，使得面内难以避免出现亮度不均。\n\n[0004]因此，现有技术存在缺陷，急需改进。\n\n发明内容\n\n[0005]本申请的目的在于提供一种显示装置，以解决现有技术中柔性LCD显示弯折时RBG光阻偏位带来的色偏以及背光模组厚度过大的问题，从而提高柔性LCD显示面板的品质。\n\n[0006]为了解决上述问题，本申请提供一种显示装置，包括一显示面板以及一背光灯板，其特征在于，所述显示面板与所述背光灯板之间设置有一控光层；其中，所述控光层包括一第一基板以及一聚合物液晶层，所述第一基板设置于所述控光层靠近所述背光灯板的一侧，所述聚合物液晶层设置于所述控光层远离所述背光灯板的一侧。\n\n[0007]在一些实施例中，所述显示面板包括一阵列层、一液晶层以及与所述阵列层相对设置的一彩膜层；所述彩膜层中的红色光阻区、绿色光阻区以及蓝色光阻区留空设置。\n\n[0008]在一些实施例中，所述彩膜层远离所述液晶层的一侧设置有一第一偏光片，所述阵列层远离所述液晶层的一侧设置有一第二偏光片。\n\n[0009]在一些实施例中，所述第一偏光片以及所述第二偏光片为金属线栅偏光片或涂布型偏光片中的至少一种。\n\n[0010]在一些实施例中，所述第一偏光片以及所述第二偏光片的厚度为10μm至100μm之间。\n\n[0011]在一些实施例中，所述第一基板为透明柔性基板。\n\n[0012]在一些实施例中，所述聚合物液晶层的雾度与所述背光灯板的亮度成正比。\n\n[0013]在一些实施例中，所述背光灯板包括一第二基板、多个光源以及一表面封装层；其中，所述光源设置于所述第二基板上，以发出第一种光、第二种光以及第三种光；所述表面封装层覆盖所述第二基板以及所述光源。\n\n[0014]在一些实施例中，所述光源包括多个设置于所述第二基板上Mini LED晶粒，每一Mini LED晶粒包括一N型半导体层、一有源层、一P型半导体层、一N型电极以及一P型电极；其中，所述N型电极以及所述P型电极与所述第二基板连接。\n\n[0015]在一些实施例中，所述Mini LED晶粒通过场序驱动的方式与所述显示面板搭配驱动，以分别发出所述第一种光、所述第二种光以及所述第三种光。\n\n[0016]本申请公开了一种显示装置，包括一显示面板以及一背光灯板，所述显示面板与所述背光灯板之间设置有一控光层；所述背光灯板包括红光区、绿光区以及蓝光区；所述控光层包括一第一基板以及一聚合物液晶层，所述第一基板设置于所述控光层靠近所述背光灯板的一侧，所述聚合物液晶层设置于所述控光层远离所述背光灯板的一侧；其中，背光灯板采用直下式三色结构，可以降低彩膜层的厚度，有效解决弯折时彩膜层光阻区偏位带来的色偏风险，并且结合聚合物液晶层实现了超薄厚度控光，可以实现柔性液晶显示。阵列层避免采用COA，可以有效规避传统COA制程在中小尺寸精细化方面的制程难题。\n\n[0017]进一步地，所述第一偏光片以及所述第二偏光片采用薄型化有机偏光片，并且所述Mini LED晶粒采用临时衬底，仅仅保留必要结构，如N型半导体层、有源层、P型半导体层、N型电极以及P型电极等，可以有效地降低所述显示装置的厚度。\n\n[0018]所述第一基板内部设置有整面电极以控制聚合物液晶层的雾度，并且所述聚合物液晶层的雾度与所述背光灯板的亮度成正比。即背光灯板亮度扩散较高的地方对应于聚合物液晶层雾度较高的区域，背光灯板亮度扩散较低的地方对应于聚合物液晶层雾度较低的区域，从而有利于在极低的厚度实现较好地混光效果。\n\n附图说明\n\n[0019]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0020]图1为本申请实施例所提供的一种显示装置的结构示意图。\n\n[0021]图2为本申请实施例所提供的一种显示装置的Mini LED晶粒的结构示意图。\n\n[0022]图3为本申请实施例提供的聚合物液晶层雾度与光源光型分布关系示意图。\n\n[0023]图4为本申请实施例所提供的一种显示装置封装后的背光灯板的结构示意图。\n\n具体实施方式\n\n[0024]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0025]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0026]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0027]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0028]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0029]具体的，请参阅图1，图1为本申请实施例所提供的一种显示装置的结构示意图。公开了一种显示装置10，包括一显示面板100以及一背光灯板300，所述显示面板100与所述背光灯板300之间设置有一控光层200；其中，所述控光层200包括一第一基板210以及一聚合物液晶层220，所述第一基板210设置于所述控光层200靠近所述背光灯板300的一侧，所述聚合物液晶层220设置于所述控光层200远离所述背光灯板300的一侧；其中，所述彩膜层110远离所述液晶层120的一侧设置有一第一偏光片140，所述阵列层130远离所述液晶层120的一侧设置有一第二偏光片150。\n\n[0030]在一些实施例中，优选地，所述第一偏光片140以及所述第二偏光片150均为薄型化有机偏光片。但是，并不以此为限，所述第一偏光片140以及所述第二偏光片150也可以只有其中一个是薄型化有机偏光片。\n\n[0031]本领域技术人员可以理解的是，本申请中所述的显示装置10除了上述结构，还包括背光胶以及框架等常规结构，因本申请中的技术方案不涉及这些结构的改变，因此，只要符合本申请的条件即可，本申请不再赘述。\n\n[0032]在本申请实施例中，所述第一偏光片140以及所述第二偏光片150均为薄型化有机偏光片。本领域技术人员可以理解的是，所述第一偏光片140以及所述第二偏光片150可以为传统TAC与PVA构成的有机偏光片经过薄化制程得到，优选地，所述第一偏光片140以及所述第二偏光片150为金属线栅偏光片或者涂布型偏光片中的至少一种。例如：当所述第一偏光片140为金属线栅偏光片时，所述第二偏光片150可以是金属线栅偏光片，也可以是涂布型偏光片；当所述第一偏光片140为涂布型偏光片时，所述第二偏光片150可以是金属线栅偏光片，也可以是涂布型偏光片。所述第一偏光片140以及所述第二偏光片150的薄化方法为本领域的常规方法即可，本申请不再赘述。\n\n[0033]在一些实施例中，所述第一偏光片140以及所述第二偏光片分别对应有补偿膜结构，所述补偿膜结构为本领域常规结构，本申请不再赘述。\n\n[0034]通过薄化后的所述第一偏光片140以及所述第二偏光片150的厚度为10μm至100μm之间。例如，所述第一偏光片140以及所述第二偏光片150的厚度可以是10μm、20μm、30μm、40μm、50μm、60μm、70μm、80μm、90μm、100μm。本领域技术人员可以理解的是，所述第一偏光片140与所述第二偏光片150的厚度可以不相同。例如，当所述第一偏光片140的厚度为15μm时，所述第二偏光片150的厚度可以是25μm、35μm、45μm、55μm、65μm、75μm、85μm、95μm；当所述第二偏光片150的厚度为15μm时，所述第一偏光片140的厚度可以是25μm、35μm、45μm、55μm、65μm、75μm、85μm、95μm，只要所述第一偏光片140以及所述第二偏光片150的厚度满足本申请条件即可。\n\n[0035]在本申请实施例中，所述显示面板100包括一阵列层130、一液晶层120以及与所述阵列层相对设置的一彩膜层110；所述彩膜层110中的红色光阻区、绿色光阻区以及蓝色光阻区留空设置。本领域技术人员可以理解的是，所述彩膜层110中的红色光阻区、绿色光阻区以及蓝色光阻区留空设置，即为在彩膜层110的制备过程中，所述R制程、G制程以及B制程直接跳过，以使彩色光阻区域留空，而所述R制程、G制程以及B制程之前以及之后的制程可以适当保留或跳过，具体的根据实际情况而定，本申请并不限定。\n\n[0036]由于彩膜层110中的红色光阻区、绿色光阻区以及蓝色光阻区留空设置，可以减薄所述彩膜层110的厚度，也可以很好地应对所述彩膜层110在弯曲过程中的色偏问题。\n\n[0037]在本申请实施例中，所述阵列层130为本领域常规结构即可，优选地，所述阵列层130避免采用COA，可以规避传统COA制程在中小尺寸精细化方面的制程难题，减少不必要的麻烦。\n\n[0038]本申请中，所述控光层200包括一第一基板210与一聚合物液晶层220，所述第一基板为透明柔性基板。其中，所述第一基板210内部设置有整面电极以控制聚合物液晶层220的雾度。所述聚合物液晶层220的雾度与所述背光灯板300的亮度成正比。优选地，所述电极为图案化结构，可以控制所述聚合物液晶层220的雾态呈现图案化分布特征。即所述背光灯板300亮度扩散较高的地方对应于聚合物液晶层220雾度较高的区域，背光灯板300亮度扩散较低的地方对应于聚合物液晶层220雾度较低的区域，从而有利于在极低的厚度实现较好地混光效果。\n\n[0039]所述聚合物液晶层220的材料为PNLC或者PDLC，PDLC(polymer dispersed liquidcrystal)，是液晶以微米量级的小微滴分散在有机固态聚合物基体内，由于由液晶分子构成的小微滴的光轴处于自由取向，其折射率与基体的折射率不匹配，当光通过基体时被微滴强烈散射而呈不透明的乳白状态或半透明状态。施加电场可调节液晶微滴的光轴取向，当两者折射率相匹配时，呈现透明态。除去电场，液晶微滴又恢复最初的散光状态，从而进行显示。PNLC(Polymer Network Liquid Crystal)即聚合物网络液晶的模式，与PDLC相比，PNLC中的液晶不是成球形(或椭球形)微滴，而是分布在聚合物三维网络中，形成连续性的通道网。在施加一定电压的情况下，具有介电各向异性的液晶分子受到电场扭矩作用，其指向矢方向将与电场保持相同的方向，散射机制瓦解，入射光就能够透过来，PNLC膜就呈明态。与PDLC相比，PNLC的视角特性比较宽和具有较高的响应速度，但是其对比度还是不高。本领域技术人员可以理解的是，上述雾度与上述透明度成反比，即雾度越高；透明度越低，雾度越低，透明度越高。具体地，所述聚合物液晶层220的材料选择PNLC或者PDLC可根据实际情况而定。\n\n[0040]具体的，请参阅图2至图4，图2为本申请实施例所提供的一种Mini LED晶粒321的结构示意图。图3为本申请实施例提供的聚合物液晶层雾度与光源光型分布关系示意图。图4为本申请实施例所提供的一种显示装置封装后的背光灯板300的结构示意图。在本申请中，所述背光灯板300包括一第二基板310、多个光源320以及一表面封装层330；其中，所述光源320设置于所述第二基板310上，以发出第一种光320A、第二种光320B以及第三种光320C；所述表面封装层330覆盖所述第二基板310以及所述光源320。\n\n[0041]本领域技术人员可以理解的是，所述背光灯板300设置多个光源320，以发出第一种光320A、第二种光320B以及第三种光320C；优选地，所述第一种光320A为红色光，所述第二种光320B为绿色光，所述第三种光320C为蓝色光，但并不以此为限，只要满足所述要求即可。例如：所述第一种光320A为红色光，所述第二种光320B为蓝色光，所述第三种光320C为绿色光。即只要所述第一种光320A、所述第二种光320B以及所述第三种光320C中的其中一个发红色光，其中一个发绿色光，其中一个发蓝色光即可。\n\n[0042]在本申请中，所述光源320包括设置于所述第二基板310上的多个Mini LED晶粒321，每一Mini LED晶粒321包括一N型半导体层3212、一有源层3213、一P型半导体层3214、一N型电极3215以及一P型电极3216；其中，所述N型电极3215以及所述P型电极3216与所述第二基板310连接。需要注意的是，所述Mini LED晶粒321在制备时，所述N型半导体层3212设置于一临时衬底3211上，当所述Mini LED晶粒321制备完成后，在封装与所述第二基板310上时，所述临时衬底3211被直接去除，进而更进一步的减薄怕所述背光灯板300的厚度。\n\n[0043]本领域技术人员可以理解的是，每一所述Mini LED晶粒321除了包括上述N型半导体层3212、有源层3213、P型半导体层3214、N型电极3215以及P型电极3216以外，还可以包括其他常规结构，并不以图2所示为限，例如：还可以包括位于P型半导体层3214以及P型电极3216之间的一透明电极。\n\n[0044]本申请中，所述背光灯板300为直下式三色结构，可以发出红色光、绿色光以及蓝色光。不同颜色的光对应不同的Mini LED晶粒321，所述Mini LED晶粒321分别绑定于所述第二基板310，或者通过小封装的形式整体封装与所述第二基板310，或者通过Blue chip+色转换的方式实现，所述色转换材料为荧光风或者量子点等；所述分别发出红色光、绿色光以及蓝色光的Mini LED晶粒321通过场序驱动的方式与所述显示面板100搭配驱动。例如：画面送入时，首先将显示面板100驱动至整帧的红色灰阶，所述背光灯板300点亮所述发红色光的Mini LED晶粒321，然后将显示面板100驱动至整帧的绿色灰阶，此时所述背光灯板300点亮所述发绿色光的Mini LED晶粒321，最后将显示面板100驱动至整帧的蓝色灰阶，此时所述背光灯板300点亮所述发蓝色光的Mini LED晶粒321，如此完成一整帧画面的显示。\n\n[0045]如图3所示，在一些实施例中，由于相邻Mini LED晶粒321之间由于光型扩散的原因，通常需要较大的雾度与一定的混光厚度以实现整面均匀性。所述图案化的聚合物液晶层220的雾度与所述单颗Mini LED晶粒321或者单分区(几颗Mini LED晶粒321构成的单独控制基本单元)的亮度成正比。\n\n[0046]在本申请中，所述Mini LED背光灯板300的厚度(所述背光灯板300的厚度为所述背光灯板300靠近所述第一基板210的一侧与所述背光灯板300远离所述第一基板210的一侧的垂直距离)为70μm至500μm之间；其中，所述第二基板310的厚度(所述第二基板310的厚度为所述第二基板310靠近所述光源320的一侧与所述第二基板310远离所述光源320的一侧的垂直距离)为10μm至120μm之间，所述光源320的厚度(所述光源320的厚度为所述光源320靠近所述第二基板310的一侧与所述光源320远离所述第二基板310的一侧的垂直距离)为50μm至120μm之间。例如：所述背光灯板300的厚度为100μm，所述第二基板310的厚度为10μm，所述光源320的厚度为50μm，所述表面封装层330的厚度为40μm，但不限于此。\n\n[0047]如图4所示，为了降低所述背光灯板300的厚度，所述Mini LED晶粒321除了一些必要结构，如上述N型半导体层3212、有源层3213、P型半导体层3214、N型电极3215以及P型电极3216以外，其他结构均可省略，如采用激光剥离的工艺去除所述临时衬底3211，以达到更薄的厚度。\n\n[0048]在本申请中，所述表面封装层330的材料为高透材料，如硅胶、有机材料等，主要作用为保护所述Mini LED晶粒321在弯折过程中的信赖性。需要强调的是，本申请中其他膜层中的所述基板材料都是本领域常规的柔性透明材料，本申请不再赘述。\n\n[0049]本申请公开了一种显示装置10，包括一显示面板100以及一背光灯板300，所述显示面板100与所述背光灯板300之间设置有一控光层200；其中，所述背光灯板300设置多个光源320，以发出第一种光320A、第二种光320B以及第三种光320C；所述控光层200包括一第一基板210以及一聚合物液晶层220，所述第一基板210设置于所述控光层200靠近所述背光灯板300的一侧，所述聚合物液晶层220设置于所述控光层200远离所述背光灯板300的一侧；其中，背光灯板300采用直下式三色结构，可以降低彩膜层110的厚度，有效解决弯折时彩膜层110光阻区偏位带来的色偏风险，并且结合聚合物液晶层实现了超薄厚度控光，可以实现柔性液晶显示。阵列层130避免采用COA，可以有效规避传统COA制程在中小尺寸精细化方面的制程难题。\n\n[0050]进一步地，所述第一偏光片140以及所述第二偏光片150采用薄型化有机偏光片，并且所述Mini LED晶粒321采用临时衬底3211，仅仅保留必要结构，如N型半导体层3212、有源层3213、P型半导体层3214、N型电极3215以及P型电极3216等，可以有效地降低所述显示装置10的厚度。\n\n[0051]所述第一基板210内含有整面电极以控制聚合物液晶层220的雾度，并且所述聚合物液晶层220的雾度与所述背光灯板300的亮度成正比。即背光灯板300亮度扩散较高的地方对应于聚合物液晶层220雾度较高的区域，背光灯板300亮度扩散较低的地方对应于聚合物液晶层220雾度较低的区域，从而有利于在极低的厚度实现较好地混光效果。\n\n[0052]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0053]以上对本申请实施例所提供的一种显示装置10进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种显示装置。\n\n背景技术\n\n[0002]目前主流的显示技术包括LCD(Liquid Crystal Display液晶显示器)和OLED(Organic Light-Emitting Diode有机电激光显示)，其中OLED技术则是采用逐颗的OLED像素主动发光，结合柔性基板，相较而言具有高对比、轻薄、可弯曲、可折叠等优势。而LCD为被动发光技术，通过整面背光结构照射液晶盒实现光线的亮暗控制。柔性LCD实现的关键难题分为低温制程的高透过率驱动背板技术、可弯折柔性Cell精确控制技术、薄型化柔性背光技术等。\n\n[0003]目前柔性驱动背板的材料主要为PI材料，分为黄色PI和透明PI，LCD需求高通过率透明PI。在柔性Cell方面，需要克服由于弯曲过程中Cell gap变化的不一致性以及CF对位偏差所造成的色偏问题，同时除了透明基板的薄型化问题之外，还需要解决上下偏光片的薄型化问题，其中偏光片需要采用补偿膜结构以补偿透明PI相位延迟问题，以上构成Cell薄型化的关键壁垒。在柔性背光方面，传统侧入式背光需要采用导光板结构以横向传导光线。在柔性化方面，传统导光板及其相应膜片结构厚度在0.5mm以上，同时多层堆叠结构不利于弯折应用；另一方面，导光板是通过波导原理进行横向与纵向光线控制，一旦导光板出现弯曲可能会破坏刀光结构，使得面内难以避免出现亮度不均。\n\n[0004]因此，现有技术存在缺陷，急需改进。\n\n发明内容\n\n[0005]本申请的目的在于提供一种显示装置，以解决现有技术中柔性LCD显示弯折时RBG光阻偏位带来的色偏以及背光模组厚度过大的问题，从而提高柔性LCD显示面板的品质。\n\n[0006]为了解决上述问题，本申请提供一种显示装置，包括一显示面板以及一背光灯板，其特征在于，所述显示面板与所述背光灯板之间设置有一控光层；其中，所述控光层包括一第一基板以及一聚合物液晶层，所述第一基板设置于所述控光层靠近所述背光灯板的一侧，所述聚合物液晶层设置于所述控光层远离所述背光灯板的一侧。\n\n[0007]在一些实施例中，所述显示面板包括一阵列层、一液晶层以及与所述阵列层相对设置的一彩膜层；所述彩膜层中的红色光阻区、绿色光阻区以及蓝色光阻区留空设置。\n\n[0008]在一些实施例中，所述彩膜层远离所述液晶层的一侧设置有一第一偏光片，所述阵列层远离所述液晶层的一侧设置有一第二偏光片。\n\n[0009]在一些实施例中，所述第一偏光片以及所述第二偏光片为金属线栅偏光片或涂布型偏光片中的至少一种。\n\n[0010]在一些实施例中，所述第一偏光片以及所述第二偏光片的厚度为10μm至100μm之间。\n\n[0011]在一些实施例中，所述第一基板为透明柔性基板。\n\n[0012]在一些实施例中，所述聚合物液晶层的雾度与所述背光灯板的亮度成正比。\n\n[0013]在一些实施例中，所述背光灯板包括一第二基板、多个光源以及一表面封装层；其中，所述光源设置于所述第二基板上，以发出第一种光、第二种光以及第三种光；所述表面封装层覆盖所述第二基板以及所述光源。\n\n[0014]在一些实施例中，所述光源包括多个设置于所述第二基板上Mini LED晶粒，每一Mini LED晶粒包括一N型半导体层、一有源层、一P型半导体层、一N型电极以及一P型电极；其中，所述N型电极以及所述P型电极与所述第二基板连接。\n\n[0015]在一些实施例中，所述Mini LED晶粒通过场序驱动的方式与所述显示面板搭配驱动，以分别发出所述第一种光、所述第二种光以及所述第三种光。\n\n[0016]本申请公开了一种显示装置，包括一显示面板以及一背光灯板，所述显示面板与所述背光灯板之间设置有一控光层；所述背光灯板包括红光区、绿光区以及蓝光区；所述控光层包括一第一基板以及一聚合物液晶层，所述第一基板设置于所述控光层靠近所述背光灯板的一侧，所述聚合物液晶层设置于所述控光层远离所述背光灯板的一侧；其中，背光灯板采用直下式三色结构，可以降低彩膜层的厚度，有效解决弯折时彩膜层光阻区偏位带来的色偏风险，并且结合聚合物液晶层实现了超薄厚度控光，可以实现柔性液晶显示。阵列层避免采用COA，可以有效规避传统COA制程在中小尺寸精细化方面的制程难题。\n\n[0017]进一步地，所述第一偏光片以及所述第二偏光片采用薄型化有机偏光片，并且所述Mini LED晶粒采用临时衬底，仅仅保留必要结构，如N型半导体层、有源层、P型半导体层、N型电极以及P型电极等，可以有效地降低所述显示装置的厚度。\n\n[0018]所述第一基板内部设置有整面电极以控制聚合物液晶层的雾度，并且所述聚合物液晶层的雾度与所述背光灯板的亮度成正比。即背光灯板亮度扩散较高的地方对应于聚合物液晶层雾度较高的区域，背光灯板亮度扩散较低的地方对应于聚合物液晶层雾度较低的区域，从而有利于在极低的厚度实现较好地混光效果。\n\n附图说明\n\n[0019]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0020]图1为本申请实施例所提供的一种显示装置的结构示意图。\n\n[0021]图2为本申请实施例所提供的一种显示装置的Mini LED晶粒的结构示意图。\n\n[0022]图3为本申请实施例提供的聚合物液晶层雾度与光源光型分布关系示意图。\n\n[0023]图4为本申请实施例所提供的一种显示装置封装后的背光灯板的结构示意图。\n\n具体实施方式\n\n[0024]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0025]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0026]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0027]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0028]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0029]具体的，请参阅图1，图1为本申请实施例所提供的一种显示装置的结构示意图。公开了一种显示装置10，包括一显示面板100以及一背光灯板300，所述显示面板100与所述背光灯板300之间设置有一控光层200；其中，所述控光层200包括一第一基板210以及一聚合物液晶层220，所述第一基板210设置于所述控光层200靠近所述背光灯板300的一侧，所述聚合物液晶层220设置于所述控光层200远离所述背光灯板300的一侧；其中，所述彩膜层110远离所述液晶层120的一侧设置有一第一偏光片140，所述阵列层130远离所述液晶层120的一侧设置有一第二偏光片150。\n\n[0030]在一些实施例中，优选地，所述第一偏光片140以及所述第二偏光片150均为薄型化有机偏光片。但是，并不以此为限，所述第一偏光片140以及所述第二偏光片150也可以只有其中一个是薄型化有机偏光片。\n\n[0031]本领域技术人员可以理解的是，本申请中所述的显示装置10除了上述结构，还包括背光胶以及框架等常规结构，因本申请中的技术方案不涉及这些结构的改变，因此，只要符合本申请的条件即可，本申请不再赘述。\n\n[0032]在本申请实施例中，所述第一偏光片140以及所述第二偏光片150均为薄型化有机偏光片。本领域技术人员可以理解的是，所述第一偏光片140以及所述第二偏光片150可以为传统TAC与PVA构成的有机偏光片经过薄化制程得到，优选地，所述第一偏光片140以及所述第二偏光片150为金属线栅偏光片或者涂布型偏光片中的至少一种。例如：当所述第一偏光片140为金属线栅偏光片时，所述第二偏光片150可以是金属线栅偏光片，也可以是涂布型偏光片；当所述第一偏光片140为涂布型偏光片时，所述第二偏光片150可以是金属线栅偏光片，也可以是涂布型偏光片。所述第一偏光片140以及所述第二偏光片150的薄化方法为本领域的常规方法即可，本申请不再赘述。\n\n[0033]在一些实施例中，所述第一偏光片140以及所述第二偏光片分别对应有补偿膜结构，所述补偿膜结构为本领域常规结构，本申请不再赘述。\n\n[0034]通过薄化后的所述第一偏光片140以及所述第二偏光片150的厚度为10μm至100μm之间。例如，所述第一偏光片140以及所述第二偏光片150的厚度可以是10μm、20μm、30μm、40μm、50μm、60μm、70μm、80μm、90μm、100μm。本领域技术人员可以理解的是，所述第一偏光片140与所述第二偏光片150的厚度可以不相同。例如，当所述第一偏光片140的厚度为15μm时，所述第二偏光片150的厚度可以是25μm、35μm、45μm、55μm、65μm、75μm、85μm、95μm；当所述第二偏光片150的厚度为15μm时，所述第一偏光片140的厚度可以是25μm、35μm、45μm、55μm、65μm、75μm、85μm、95μm，只要所述第一偏光片140以及所述第二偏光片150的厚度满足本申请条件即可。\n\n[0035]在本申请实施例中，所述显示面板100包括一阵列层130、一液晶层120以及与所述阵列层相对设置的一彩膜层110；所述彩膜层110中的红色光阻区、绿色光阻区以及蓝色光阻区留空设置。本领域技术人员可以理解的是，所述彩膜层110中的红色光阻区、绿色光阻区以及蓝色光阻区留空设置，即为在彩膜层110的制备过程中，所述R制程、G制程以及B制程直接跳过，以使彩色光阻区域留空，而所述R制程、G制程以及B制程之前以及之后的制程可以适当保留或跳过，具体的根据实际情况而定，本申请并不限定。\n\n[0036]由于彩膜层110中的红色光阻区、绿色光阻区以及蓝色光阻区留空设置，可以减薄所述彩膜层110的厚度，也可以很好地应对所述彩膜层110在弯曲过程中的色偏问题。\n\n[0037]在本申请实施例中，所述阵列层130为本领域常规结构即可，优选地，所述阵列层130避免采用COA，可以规避传统COA制程在中小尺寸精细化方面的制程难题，减少不必要的麻烦。\n\n[0038]本申请中，所述控光层200包括一第一基板210与一聚合物液晶层220，所述第一基板为透明柔性基板。其中，所述第一基板210内部设置有整面电极以控制聚合物液晶层220的雾度。所述聚合物液晶层220的雾度与所述背光灯板300的亮度成正比。优选地，所述电极为图案化结构，可以控制所述聚合物液晶层220的雾态呈现图案化分布特征。即所述背光灯板300亮度扩散较高的地方对应于聚合物液晶层220雾度较高的区域，背光灯板300亮度扩散较低的地方对应于聚合物液晶层220雾度较低的区域，从而有利于在极低的厚度实现较好地混光效果。\n\n[0039]所述聚合物液晶层220的材料为PNLC或者PDLC，PDLC(polymer dispersed liquidcrystal)，是液晶以微米量级的小微滴分散在有机固态聚合物基体内，由于由液晶分子构成的小微滴的光轴处于自由取向，其折射率与基体的折射率不匹配，当光通过基体时被微滴强烈散射而呈不透明的乳白状态或半透明状态。施加电场可调节液晶微滴的光轴取向，当两者折射率相匹配时，呈现透明态。除去电场，液晶微滴又恢复最初的散光状态，从而进行显示。PNLC(Polymer Network Liquid Crystal)即聚合物网络液晶的模式，与PDLC相比，PNLC中的液晶不是成球形(或椭球形)微滴，而是分布在聚合物三维网络中，形成连续性的通道网。在施加一定电压的情况下，具有介电各向异性的液晶分子受到电场扭矩作用，其指向矢方向将与电场保持相同的方向，散射机制瓦解，入射光就能够透过来，PNLC膜就呈明态。与PDLC相比，PNLC的视角特性比较宽和具有较高的响应速度，但是其对比度还是不高。本领域技术人员可以理解的是，上述雾度与上述透明度成反比，即雾度越高；透明度越低，雾度越低，透明度越高。具体地，所述聚合物液晶层220的材料选择PNLC或者PDLC可根据实际情况而定。\n\n[0040]具体的，请参阅图2至图4，图2为本申请实施例所提供的一种Mini LED晶粒321的结构示意图。图3为本申请实施例提供的聚合物液晶层雾度与光源光型分布关系示意图。图4为本申请实施例所提供的一种显示装置封装后的背光灯板300的结构示意图。在本申请中，所述背光灯板300包括一第二基板310、多个光源320以及一表面封装层330；其中，所述光源320设置于所述第二基板310上，以发出第一种光320A、第二种光320B以及第三种光320C；所述表面封装层330覆盖所述第二基板310以及所述光源320。\n\n[0041]本领域技术人员可以理解的是，所述背光灯板300设置多个光源320，以发出第一种光320A、第二种光320B以及第三种光320C；优选地，所述第一种光320A为红色光，所述第二种光320B为绿色光，所述第三种光320C为蓝色光，但并不以此为限，只要满足所述要求即可。例如：所述第一种光320A为红色光，所述第二种光320B为蓝色光，所述第三种光320C为绿色光。即只要所述第一种光320A、所述第二种光320B以及所述第三种光320C中的其中一个发红色光，其中一个发绿色光，其中一个发蓝色光即可。\n\n[0042]在本申请中，所述光源320包括设置于所述第二基板310上的多个Mini LED晶粒321，每一Mini LED晶粒321包括一N型半导体层3212、一有源层3213、一P型半导体层3214、一N型电极3215以及一P型电极3216；其中，所述N型电极3215以及所述P型电极3216与所述第二基板310连接。需要注意的是，所述Mini LED晶粒321在制备时，所述N型半导体层3212设置于一临时衬底3211上，当所述Mini LED晶粒321制备完成后，在封装与所述第二基板310上时，所述临时衬底3211被直接去除，进而更进一步的减薄怕所述背光灯板300的厚度。\n\n[0043]本领域技术人员可以理解的是，每一所述Mini LED晶粒321除了包括上述N型半导体层3212、有源层3213、P型半导体层3214、N型电极3215以及P型电极3216以外，还可以包括其他常规结构，并不以图2所示为限，例如：还可以包括位于P型半导体层3214以及P型电极3216之间的一透明电极。\n\n[0044]本申请中，所述背光灯板300为直下式三色结构，可以发出红色光、绿色光以及蓝色光。不同颜色的光对应不同的Mini LED晶粒321，所述Mini LED晶粒321分别绑定于所述第二基板310，或者通过小封装的形式整体封装与所述第二基板310，或者通过Blue chip+色转换的方式实现，所述色转换材料为荧光风或者量子点等；所述分别发出红色光、绿色光以及蓝色光的Mini LED晶粒321通过场序驱动的方式与所述显示面板100搭配驱动。例如：画面送入时，首先将显示面板100驱动至整帧的红色灰阶，所述背光灯板300点亮所述发红色光的Mini LED晶粒321，然后将显示面板100驱动至整帧的绿色灰阶，此时所述背光灯板300点亮所述发绿色光的Mini LED晶粒321，最后将显示面板100驱动至整帧的蓝色灰阶，此时所述背光灯板300点亮所述发蓝色光的Mini LED晶粒321，如此完成一整帧画面的显示。\n\n[0045]如图3所示，在一些实施例中，由于相邻Mini LED晶粒321之间由于光型扩散的原因，通常需要较大的雾度与一定的混光厚度以实现整面均匀性。所述图案化的聚合物液晶层220的雾度与所述单颗Mini LED晶粒321或者单分区(几颗Mini LED晶粒321构成的单独控制基本单元)的亮度成正比。\n\n[0046]在本申请中，所述Mini LED背光灯板300的厚度(所述背光灯板300的厚度为所述背光灯板300靠近所述第一基板210的一侧与所述背光灯板300远离所述第一基板210的一侧的垂直距离)为70μm至500μm之间；其中，所述第二基板310的厚度(所述第二基板310的厚度为所述第二基板310靠近所述光源320的一侧与所述第二基板310远离所述光源320的一侧的垂直距离)为10μm至120μm之间，所述光源320的厚度(所述光源320的厚度为所述光源320靠近所述第二基板310的一侧与所述光源320远离所述第二基板310的一侧的垂直距离)为50μm至120μm之间。例如：所述背光灯板300的厚度为100μm，所述第二基板310的厚度为10μm，所述光源320的厚度为50μm，所述表面封装层330的厚度为40μm，但不限于此。\n\n[0047]如图4所示，为了降低所述背光灯板300的厚度，所述Mini LED晶粒321除了一些必要结构，如上述N型半导体层3212、有源层3213、P型半导体层3214、N型电极3215以及P型电极3216以外，其他结构均可省略，如采用激光剥离的工艺去除所述临时衬底3211，以达到更薄的厚度。\n\n[0048]在本申请中，所述表面封装层330的材料为高透材料，如硅胶、有机材料等，主要作用为保护所述Mini LED晶粒321在弯折过程中的信赖性。需要强调的是，本申请中其他膜层中的所述基板材料都是本领域常规的柔性透明材料，本申请不再赘述。\n\n[0049]本申请公开了一种显示装置10，包括一显示面板100以及一背光灯板300，所述显示面板100与所述背光灯板300之间设置有一控光层200；其中，所述背光灯板300设置多个光源320，以发出第一种光320A、第二种光320B以及第三种光320C；所述控光层200包括一第一基板210以及一聚合物液晶层220，所述第一基板210设置于所述控光层200靠近所述背光灯板300的一侧，所述聚合物液晶层220设置于所述控光层200远离所述背光灯板300的一侧；其中，背光灯板300采用直下式三色结构，可以降低彩膜层110的厚度，有效解决弯折时彩膜层110光阻区偏位带来的色偏风险，并且结合聚合物液晶层实现了超薄厚度控光，可以实现柔性液晶显示。阵列层130避免采用COA，可以有效规避传统COA制程在中小尺寸精细化方面的制程难题。\n\n[0050]进一步地，所述第一偏光片140以及所述第二偏光片150采用薄型化有机偏光片，并且所述Mini LED晶粒321采用临时衬底3211，仅仅保留必要结构，如N型半导体层3212、有源层3213、P型半导体层3214、N型电极3215以及P型电极3216等，可以有效地降低所述显示装置10的厚度。\n\n[0051]所述第一基板210内含有整面电极以控制聚合物液晶层220的雾度，并且所述聚合物液晶层220的雾度与所述背光灯板300的亮度成正比。即背光灯板300亮度扩散较高的地方对应于聚合物液晶层220雾度较高的区域，背光灯板300亮度扩散较低的地方对应于聚合物液晶层220雾度较低的区域，从而有利于在极低的厚度实现较好地混光效果。\n\n[0052]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0053]以上对本申请实施例所提供的一种显示装置10进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10852, 23906, '技术领域\n\n[0001]本申请涉及显示面板技术领域，尤其涉及一种可弯折背光模组及显示面板。\n\n背景技术\n\n[0002]柔性屏有着可弯曲、柔韧性佳的技术优势，因此受到包括手机、笔电等众多显示终端厂的青睐。就液晶显示面板(LCD)的背光而言，常规液晶显示面板由于背光等因素限制难以实现很好的弯折性能。常规侧入式背光由于导光板厚度和导光网点等设计因素，无法实现大幅度弯折，常规直下式背光由于厚度较厚，也无法实现弯折应用，同时常规直下式背光灯珠尺寸较大，大幅度弯折对焊接灯珠的工艺也会造成较大的挑战，因此采用常规方式制备可弯折液晶显示面板的背光模组的方案可行性较低。\n\n发明内容\n\n[0003]本申请实施例提供了一种将常规背光与微型发光二极管背光结合的可弯折背光模组，以解决现有常规方式的背光模组不能弯折的问题，可以使背光模组具有良好弯折性能，从而实现显示面板的良好弯折性能。\n\n[0004]本申请提供了一种可弯折背光模组，包括：\n\n[0005]第一非弯折部，包括第一背光单元，所述第一背光单元包括第一发光二极管灯；\n\n[0006]第二非弯折部，包括第二背光单元，所述第二背光单元包括第二发光二极管灯；\n\n[0007]可弯折部，所述可弯折部设于所述第一非弯折部和所述第二非弯折部之间，所述可弯折部包括第三背光单元，所述第三背光单元包括多个微型发光二极管和柔性基底，所述微型发光二极管设于所述柔性基底上。\n\n[0008]在本申请的可弯折背光模组中，所述第三背光单元包括设于所述微型发光二极管上的微结构扩散膜，所述微结构扩散膜包括衬底、第一微结构层以及第二微结构层，所述第一微结构层和所述第二微结构层分别位于所述衬底的两侧。\n\n[0009]在本申请的可弯折背光模组中，所述第一微结构层包括位于所述衬底上远离所述微型发光二极管一侧的多个半透反射块，所述第二微结构层包括位于所述衬底上靠近所述微型发光二极管一侧的多个凹陷或/和多个凸起。\n\n[0010]在本申请的可弯折背光模组中，所述半透反射块垂直于所述柔性基底的正投影覆盖所述微型发光二极管垂直于所述柔性基底的正投影。\n\n[0011]在本申请的可弯折背光模组中，还包括扩散片，所述第一背光单元还包括第一导光板，所述第二背光单元还包括第二导光板，所述扩散片设置于所述第一导光板、所述第二导光板以及所述微型发光二极管上。\n\n[0012]在本申请的可弯折背光模组中，所述扩散片包括扩散粒子，所述扩散粒子在所述扩散片的对应于所述第一背光单元和所述第三背光单元的连接处的部位中、以及所述扩散片的对应于所述第二背光单元和所述第三背光单元的连接处的部位中的浓度大于所述扩散粒子在所述扩散片的对应于所述第三背光单元中心部位中的部位处的浓度。\n\n[0013]在本申请的可弯折背光模组中，所述扩散粒子在所述扩散片的对应于所述第三背光单元中心部位中的部位处的浓度大于所述扩散粒子在所述扩散片的对应于第一背光单元中心部位中和所述第二背光单元中心部位中的部位处的浓度。\n\n[0014]在本申请的可弯折背光模组中，所述第一背光单元还包括第一背框，所述第一背框位于所述第一导光板下，所述第一背框靠近所述第三背光的一端设有第一延伸部；\n\n[0015]所述第二背光单元还包括第二背框，所述第二背框位于所述第二导光板下，所述第二背框靠近所述第三背光的一端设有第二延伸部；\n\n[0016]其中，所述第三背光单元部分的位于所述第一延伸部和所述第二延伸部上。\n\n[0017]在本申请的可弯折背光模组中，所述第一背光单元和所述第二背光单元为侧入式背光单元，多个所述发光二极管灯设置于所述第一导光板和所述第二导光板的侧端面。\n\n[0018]本申请还提供了一种显示面板，所述显示面板包括上述任意一种可弯折背光模组。\n\n[0019]本申请的有益效果为：通过将常规背光与微型发光二极管背光结合制作可弯折背光模组，以解决现有常规方式的背光模组不能弯折的问题，可以使背光模组具有良好弯折性能，从而实现显示面板的良好弯折性能。\n\n附图说明\n\n[0020]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0021]图1为本申请一实施例提供的可弯折背光模组的断面结构示意图；\n\n[0022]图2为本申请一实施例提供的微结构扩散膜的断面结构示意图；\n\n[0023]图3为本申请一实施例提供的微结构扩散膜的俯视示意图；\n\n[0024]图4为本申请一实施例提供的扩散片的俯视结构的示意图；\n\n[0025]图5为本申请一实施例提供的显示面板的示意图。\n\n具体实施方式\n\n[0026]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0027]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0028]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0029]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0030]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0031]请参阅图1～图4，本申请的实施例提供了一种可弯折背光模组100，可弯折背光模组100包括第一非弯折部DD、第二非弯折部EE、以及可弯折部FF。第一非弯折部DD包括第一背光单元10，第一背光单元10包括第一发光二极管灯11；第二非弯折部EE包括第二背光单元20，第二背光单元20包括第二发光二极管灯21；可弯折部FF设于第一非弯折部DD和第二非弯折部EE之间，可弯折部FF包括第三背光单元30，第三背光单元30包括多个微型发光二极管32和柔性基底31，微型发光二极管32设于柔性基底上31。\n\n[0032]在一些实施例中，第一发光二极管灯11和第二发光二极管灯21的尺寸大于微型发光二极管32的尺寸，例如第一发光二极管灯11和第二发光二极管灯21指LED灯，微型发光二极管32指mini-LED。在一些实施例中，柔性基底31可以包括聚酰亚胺、聚甲基丙烯酸甲酯、聚碳酸酯、聚苯乙烯、丙烯基树脂等之中的一种。在一些实施例中，多个微型发光二极管32阵列设置于柔性基底31上。在一些实施例中，柔性基底31厚度可以设定在30μm内。由于第三背光单元30采用柔性基底31，因此可弯折背光模组10在第三背光单元30的部位可以具有很好的弯折性能。\n\n[0033]在一些实施例中，请参阅图1～图3，图1示意了可弯折背光模组100的断面结构图，图2为图1中微结构扩散膜33的断面结构图，图3为图1中微结构扩散膜33的俯视结构图。第三背光单元30包括设于微型发光二极管32上的微结构扩散膜33，微结构扩散膜33包括衬底331、第一微结构层332以及第二微结构层333，第一微结构层332和第二微结构层333分别位于衬底331的两侧。微结构扩散膜33的主要作用为遮蔽微型发光二极管32的灯影以及匀光扩散。\n\n[0034]在一些实施例中，第一微结构层332包括位于衬底上远离微型发光二极管32一侧的多个半透反射块3321，第二微结构层333包括位于衬底331上靠近微型发光二极管32一侧的多个凹陷或/和多个凸起3331。\n\n[0035]在一些实施例中，第一微结构层332的半透反射块3321垂直于柔性基底31的正投影覆盖微型发光二极管32垂直于柔性基底31的正投影。\n\n[0036]在一些实施例中，第二微结构层333的凹陷或/和凸起3331的长度小于第一微结构层332的半透反射块3321的长度。\n\n[0037]在一些实施例中，微结构扩散膜33主要由衬底331及在衬底331基材两侧加工的第一微结构层332以及第二微结构层333构成。衬底331的厚度可以在50μm内，第二微结构层333厚度可以在10μm内，第一微结构层332厚度可以在20μm内，微结构扩散膜33总厚度最薄可达80μm内。第二微结构层333为微米级微结构，主要作用为使微型发光二极管32发出的光线沿特定的微结构方向形成光扩散，其效果优于常规雾度扩散片。第一微结构层332为毫米级微结构，主要作用为对微型发光二极管32正面发出的光线形成压制，增强微型发光二极管32侧面出光，达到遮蔽灯影和匀光效果。第一微结构层332与下方的微型发光二极管32阵列的排布或周期相对应，大小可以为微型发光二极管32大小的2-10倍，例如达到1-5mm，第一微结构层332在衬底上的投影之间或之上分布有散乱的第二微结构层333在衬底上的投影。\n\n[0038]在一些实施例中，第一微结构层332上的多个半透反射块3321为白色油墨，白色油墨通过喷墨或涂布等方式形成多个半透反射块3321，半透反射块3321具有一定的透过率和反射率，例如半透反射块3321的透过率为10％～20％，半透反射块3321的反射率为70％～80％，但不限于此。\n\n[0039]在一些实施例中，第二微结构层333上的多个凹陷或/和凸起3331可以为压印的凹陷或/和凸起，例如通过压印的方式在衬底331上形成的多个凹陷或/和凸起3331，但不限于此，凹陷或/和凸起的形状不限定，可以为三角形、矩形、以及圆形等，第二微结构层333的凹陷或/和凸起3331可以为点状或块状。\n\n[0040]在一些实施例中，可弯折背光模组100还包括扩散片123，第一背光单元10还包括第一导光板14，第二背光单元20还包括第二导光板24，扩散片123设置于第一导光板14、第二导光板24以及微型发光二极管32上。具体扩散片123可以设置于第一导光板14、第二导光板24以及微结构扩散膜33上。\n\n[0041]在一些实施例中，扩散片123在第一背光单元10、第二背光单元20以及第三背光单元30上可以为一整体结构，例如一个扩散片123同时在第一背光单元10、第二背光单元20以及第三背光单元30起到遮蔽灯影和匀光的作用。\n\n[0042]在一些实施例中，请参阅图1、图4，图4为图1中扩散片123的俯视结构图，扩散片123包括扩散粒子1231，扩散粒子1231在扩散片123的对应于第一背光单元10和第三背光单元30的连接处的部位中、以及扩散片123的对应于第二背光单元20和第三背光单元30的连接处的部位中的浓度大于扩散粒子1231在扩散片123的对应于第三背光单元30中心部位中的部位处的浓度，以达到对第一背光单元10和第三背光单元30之间拼缝的较好的遮蔽效果，以达对第二背光单元20和第三背光单元30之间拼缝的较好的遮蔽效果。\n\n[0043]在一些实施例中，请参阅图1、图4，扩散粒子1231在扩散片123的对应于第三背光单元30中心部位中的部位处的浓度大于扩散粒子1231在扩散片123的对应于第一背光单元10中心部位中和第二背光单元20中心部位中的部位处的浓度。在一些实施例中，第一背光单元10和第二背光单元20分别包括第一导光板14和第二导光板24，第一导光板14和第二导光板24均对光线的出射具有匀光作用，而第三背光单元30没有导光板，因此在第三背光单元30的中心部位设置扩散粒子1231的浓度比在第一背光单元10和第二背光单元20的中心部位更大，以起到在第三背光单元30中心部位增强匀光的效果。\n\n[0044]在一些实施例中，第一背光单元10和第三背光单元30的连接部位、以及第二背光单元20和第三背光单元30的连接部位设置的扩散粒子1231的浓度最大，第三背光单元30的中心部位设置的扩散粒子1231的浓度其次大，在第一背光单元10和第二背光单元20的中心部位设置的扩散粒子1231的浓度最小。\n\n[0045]在一些实施例中，扩散片123为常规扩散剂涂布扩散片，厚度可以控制在50μm内。扩散片123对应的第一背光单元10和第三背光单元30组合拼接处扩散粒子1231的浓度较高，雾度在90％以上，以达到较好的拼缝遮蔽效果；扩散片123对应的微型发光二极管32光源面内区域扩散剂浓度略低，雾度在80％以上，作用是遮蔽灯影和匀光；扩散片123对应的第一背光单元10和第二背光单元20面内区域扩散剂浓度最低，雾度在60％以上。为支持可弯折背光模组100薄型化设计理念，图1所示的第三背光单元的柔性基底31的厚度可以在30μm内，微型发光二极管32和其保护胶厚度可以在60μm内，扩散片123厚度可以在50μm内，微结构扩散膜33厚度可以在80μm内，可弯折背光模组100综合整体最薄厚度可达0.22mm内。\n\n[0046]在一些实施例中，第一背光单元10还包括第一背框12，第一背框12位于第一导光板14下，第一背框12靠近第三背光30的一端设有第一延伸部121；第二背光单元20还包括第二背框22，第二背框22位于第二导光板24下，第二背框22靠近第三背光30的一端设有第二延伸部221；其中，第三背光单元30部分的位于第一延伸部121和第二延伸部221上。\n\n[0047]在一些实施例中，第三背光单元30的柔性基底31部分的位于第一延伸部121和第二延伸部221上。\n\n[0048]在一些实施例中，第一背光单元10和第二背光单元20为侧入式背光，背光外层的第一背框12和第二背框22为胶铁框，第一背框12和第二背框22大小比常规背光略大，使第三背光单元30的两侧可以粘接在第一背框12的第一延伸部121和第二背框22的第二延伸部221上形成支撑结构，第一延伸部121和第二延伸部221支撑第三背光单元30的部分，例如支撑第三背光单元30的柔性基底31的部分。第一背光单元10和第二背光单元20的厚度可根据第三背光单元30整体厚度进行调整，以满足第三背光单元30与扩散片123之间的间隙为预设间隙，例如第三背光单元30的微结构扩散膜33与扩散片123之间的间隙为无间隙。\n\n[0049]在一些实施例中，第一背光单元10和第二背光单元20为侧入式背光单元，多个发光二极管灯11或21设置于所述第一导光板14和第二导光板24的侧端面。具体的，多个第一发光二极管灯11设置于所述第一导光板14的侧端面，多个第二发光二极管灯21设置于所述第二导光板24的侧端面。\n\n[0050]在一些实施例中，第一背光单元10还包括第一上棱镜片17和第一下棱镜片16，可以提升第一背光单元10的亮度。在一些实施例中，第二背光单元20还包括第二上棱镜片27和第二下棱镜片26，可以提升第二背光单元20的亮度。具体的，第一下棱镜片16设于扩散片123上，第一上棱镜片17设于第一下棱镜片16上，第二下棱镜片26设于扩散片123上，第二上棱镜片27设于第二下棱镜片26上。\n\n[0051]在一些实施例中，可弯折背光模组100还包括反射层，具体的，第一背光单元10包括第一反射层13，第二背光单元20包括第二反射层23。第三背光单元30也可以包括反射层，具体的，第三背光单元30包括的反射层可以设置于微型发光二极管32靠近柔性基底31的一侧，也以设置于柔性基底31靠近微型发光二极管32的表面，也以设置于柔性基底31远离微型发光二极管32的一侧。\n\n[0052]在一些实施例中，可弯折背光模组100可以包括出光侧和与出光侧相反的背光侧，出光侧指可弯折背光模组100中光源的光线出射的方向，背光侧指与出光侧相背的非出光侧，例如在图1中，出光侧为扩散片123远离第一背框12、第二背框22的一侧，背光侧为第一背框12、第二背框22远离扩散片123的一侧。\n\n[0053]在一些实施例中，请参阅图1，第一背光单元10包括：第一背框12、设于第一背框12上的第一反射层13、设于第一反射层13上的第一导光板14、设于第一导光板14上的扩散片123、设于扩散片123上的第一下棱镜片16、设于第一下棱镜片16上的第一上棱镜片17、以及设于第一导光板14侧端面的第一发光二极管灯11。在一些实施例中，第二背光单元20包括：第二背框22、设于第二背框22上的第二反射层23、设于第二反射层23上的第二导光板24、设于第二导光板24上的扩散片123、设于扩散片123上的第二下棱镜片26、设于第二下棱镜片26上的第二上棱镜片27、以及设于第二导光板24侧端面的第二发光二极管灯21。在一些实施例中，第三背光单元30包括：柔性基底31、设于柔性基底31上的微型发光二极管32、设于微型发光二极管32上的微结构扩散膜33、设于微结构扩散膜33上的扩散片123。\n\n[0054]本申请还提供了一种显示面板1000，请参阅图5，显示面板1000包括上述任意一种可弯折背光模组100，还可以选择性的包括保护结构、显示部件等其他结构或部件600。\n\n[0055]本申请通过将常规背光与微型发光二极管背光结合制作可弯折背光模组，以解决现有常规方式的背光模组不能弯折的问题，可以使背光模组具有良好弯折性能，从而实现显示面板的良好弯折性能。\n\n[0056]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0057]以上对本申请实施例进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示面板技术领域，尤其涉及一种可弯折背光模组及显示面板。\n\n背景技术\n\n[0002]柔性屏有着可弯曲、柔韧性佳的技术优势，因此受到包括手机、笔电等众多显示终端厂的青睐。就液晶显示面板(LCD)的背光而言，常规液晶显示面板由于背光等因素限制难以实现很好的弯折性能。常规侧入式背光由于导光板厚度和导光网点等设计因素，无法实现大幅度弯折，常规直下式背光由于厚度较厚，也无法实现弯折应用，同时常规直下式背光灯珠尺寸较大，大幅度弯折对焊接灯珠的工艺也会造成较大的挑战，因此采用常规方式制备可弯折液晶显示面板的背光模组的方案可行性较低。\n\n发明内容\n\n[0003]本申请实施例提供了一种将常规背光与微型发光二极管背光结合的可弯折背光模组，以解决现有常规方式的背光模组不能弯折的问题，可以使背光模组具有良好弯折性能，从而实现显示面板的良好弯折性能。\n\n[0004]本申请提供了一种可弯折背光模组，包括：\n\n[0005]第一非弯折部，包括第一背光单元，所述第一背光单元包括第一发光二极管灯；\n\n[0006]第二非弯折部，包括第二背光单元，所述第二背光单元包括第二发光二极管灯；\n\n[0007]可弯折部，所述可弯折部设于所述第一非弯折部和所述第二非弯折部之间，所述可弯折部包括第三背光单元，所述第三背光单元包括多个微型发光二极管和柔性基底，所述微型发光二极管设于所述柔性基底上。\n\n[0008]在本申请的可弯折背光模组中，所述第三背光单元包括设于所述微型发光二极管上的微结构扩散膜，所述微结构扩散膜包括衬底、第一微结构层以及第二微结构层，所述第一微结构层和所述第二微结构层分别位于所述衬底的两侧。\n\n[0009]在本申请的可弯折背光模组中，所述第一微结构层包括位于所述衬底上远离所述微型发光二极管一侧的多个半透反射块，所述第二微结构层包括位于所述衬底上靠近所述微型发光二极管一侧的多个凹陷或/和多个凸起。\n\n[0010]在本申请的可弯折背光模组中，所述半透反射块垂直于所述柔性基底的正投影覆盖所述微型发光二极管垂直于所述柔性基底的正投影。\n\n[0011]在本申请的可弯折背光模组中，还包括扩散片，所述第一背光单元还包括第一导光板，所述第二背光单元还包括第二导光板，所述扩散片设置于所述第一导光板、所述第二导光板以及所述微型发光二极管上。\n\n[0012]在本申请的可弯折背光模组中，所述扩散片包括扩散粒子，所述扩散粒子在所述扩散片的对应于所述第一背光单元和所述第三背光单元的连接处的部位中、以及所述扩散片的对应于所述第二背光单元和所述第三背光单元的连接处的部位中的浓度大于所述扩散粒子在所述扩散片的对应于所述第三背光单元中心部位中的部位处的浓度。\n\n[0013]在本申请的可弯折背光模组中，所述扩散粒子在所述扩散片的对应于所述第三背光单元中心部位中的部位处的浓度大于所述扩散粒子在所述扩散片的对应于第一背光单元中心部位中和所述第二背光单元中心部位中的部位处的浓度。\n\n[0014]在本申请的可弯折背光模组中，所述第一背光单元还包括第一背框，所述第一背框位于所述第一导光板下，所述第一背框靠近所述第三背光的一端设有第一延伸部；\n\n[0015]所述第二背光单元还包括第二背框，所述第二背框位于所述第二导光板下，所述第二背框靠近所述第三背光的一端设有第二延伸部；\n\n[0016]其中，所述第三背光单元部分的位于所述第一延伸部和所述第二延伸部上。\n\n[0017]在本申请的可弯折背光模组中，所述第一背光单元和所述第二背光单元为侧入式背光单元，多个所述发光二极管灯设置于所述第一导光板和所述第二导光板的侧端面。\n\n[0018]本申请还提供了一种显示面板，所述显示面板包括上述任意一种可弯折背光模组。\n\n[0019]本申请的有益效果为：通过将常规背光与微型发光二极管背光结合制作可弯折背光模组，以解决现有常规方式的背光模组不能弯折的问题，可以使背光模组具有良好弯折性能，从而实现显示面板的良好弯折性能。\n\n附图说明\n\n[0020]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0021]图1为本申请一实施例提供的可弯折背光模组的断面结构示意图；\n\n[0022]图2为本申请一实施例提供的微结构扩散膜的断面结构示意图；\n\n[0023]图3为本申请一实施例提供的微结构扩散膜的俯视示意图；\n\n[0024]图4为本申请一实施例提供的扩散片的俯视结构的示意图；\n\n[0025]图5为本申请一实施例提供的显示面板的示意图。\n\n具体实施方式\n\n[0026]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0027]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0028]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0029]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0030]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0031]请参阅图1～图4，本申请的实施例提供了一种可弯折背光模组100，可弯折背光模组100包括第一非弯折部DD、第二非弯折部EE、以及可弯折部FF。第一非弯折部DD包括第一背光单元10，第一背光单元10包括第一发光二极管灯11；第二非弯折部EE包括第二背光单元20，第二背光单元20包括第二发光二极管灯21；可弯折部FF设于第一非弯折部DD和第二非弯折部EE之间，可弯折部FF包括第三背光单元30，第三背光单元30包括多个微型发光二极管32和柔性基底31，微型发光二极管32设于柔性基底上31。\n\n[0032]在一些实施例中，第一发光二极管灯11和第二发光二极管灯21的尺寸大于微型发光二极管32的尺寸，例如第一发光二极管灯11和第二发光二极管灯21指LED灯，微型发光二极管32指mini-LED。在一些实施例中，柔性基底31可以包括聚酰亚胺、聚甲基丙烯酸甲酯、聚碳酸酯、聚苯乙烯、丙烯基树脂等之中的一种。在一些实施例中，多个微型发光二极管32阵列设置于柔性基底31上。在一些实施例中，柔性基底31厚度可以设定在30μm内。由于第三背光单元30采用柔性基底31，因此可弯折背光模组10在第三背光单元30的部位可以具有很好的弯折性能。\n\n[0033]在一些实施例中，请参阅图1～图3，图1示意了可弯折背光模组100的断面结构图，图2为图1中微结构扩散膜33的断面结构图，图3为图1中微结构扩散膜33的俯视结构图。第三背光单元30包括设于微型发光二极管32上的微结构扩散膜33，微结构扩散膜33包括衬底331、第一微结构层332以及第二微结构层333，第一微结构层332和第二微结构层333分别位于衬底331的两侧。微结构扩散膜33的主要作用为遮蔽微型发光二极管32的灯影以及匀光扩散。\n\n[0034]在一些实施例中，第一微结构层332包括位于衬底上远离微型发光二极管32一侧的多个半透反射块3321，第二微结构层333包括位于衬底331上靠近微型发光二极管32一侧的多个凹陷或/和多个凸起3331。\n\n[0035]在一些实施例中，第一微结构层332的半透反射块3321垂直于柔性基底31的正投影覆盖微型发光二极管32垂直于柔性基底31的正投影。\n\n[0036]在一些实施例中，第二微结构层333的凹陷或/和凸起3331的长度小于第一微结构层332的半透反射块3321的长度。\n\n[0037]在一些实施例中，微结构扩散膜33主要由衬底331及在衬底331基材两侧加工的第一微结构层332以及第二微结构层333构成。衬底331的厚度可以在50μm内，第二微结构层333厚度可以在10μm内，第一微结构层332厚度可以在20μm内，微结构扩散膜33总厚度最薄可达80μm内。第二微结构层333为微米级微结构，主要作用为使微型发光二极管32发出的光线沿特定的微结构方向形成光扩散，其效果优于常规雾度扩散片。第一微结构层332为毫米级微结构，主要作用为对微型发光二极管32正面发出的光线形成压制，增强微型发光二极管32侧面出光，达到遮蔽灯影和匀光效果。第一微结构层332与下方的微型发光二极管32阵列的排布或周期相对应，大小可以为微型发光二极管32大小的2-10倍，例如达到1-5mm，第一微结构层332在衬底上的投影之间或之上分布有散乱的第二微结构层333在衬底上的投影。\n\n[0038]在一些实施例中，第一微结构层332上的多个半透反射块3321为白色油墨，白色油墨通过喷墨或涂布等方式形成多个半透反射块3321，半透反射块3321具有一定的透过率和反射率，例如半透反射块3321的透过率为10％～20％，半透反射块3321的反射率为70％～80％，但不限于此。\n\n[0039]在一些实施例中，第二微结构层333上的多个凹陷或/和凸起3331可以为压印的凹陷或/和凸起，例如通过压印的方式在衬底331上形成的多个凹陷或/和凸起3331，但不限于此，凹陷或/和凸起的形状不限定，可以为三角形、矩形、以及圆形等，第二微结构层333的凹陷或/和凸起3331可以为点状或块状。\n\n[0040]在一些实施例中，可弯折背光模组100还包括扩散片123，第一背光单元10还包括第一导光板14，第二背光单元20还包括第二导光板24，扩散片123设置于第一导光板14、第二导光板24以及微型发光二极管32上。具体扩散片123可以设置于第一导光板14、第二导光板24以及微结构扩散膜33上。\n\n[0041]在一些实施例中，扩散片123在第一背光单元10、第二背光单元20以及第三背光单元30上可以为一整体结构，例如一个扩散片123同时在第一背光单元10、第二背光单元20以及第三背光单元30起到遮蔽灯影和匀光的作用。\n\n[0042]在一些实施例中，请参阅图1、图4，图4为图1中扩散片123的俯视结构图，扩散片123包括扩散粒子1231，扩散粒子1231在扩散片123的对应于第一背光单元10和第三背光单元30的连接处的部位中、以及扩散片123的对应于第二背光单元20和第三背光单元30的连接处的部位中的浓度大于扩散粒子1231在扩散片123的对应于第三背光单元30中心部位中的部位处的浓度，以达到对第一背光单元10和第三背光单元30之间拼缝的较好的遮蔽效果，以达对第二背光单元20和第三背光单元30之间拼缝的较好的遮蔽效果。\n\n[0043]在一些实施例中，请参阅图1、图4，扩散粒子1231在扩散片123的对应于第三背光单元30中心部位中的部位处的浓度大于扩散粒子1231在扩散片123的对应于第一背光单元10中心部位中和第二背光单元20中心部位中的部位处的浓度。在一些实施例中，第一背光单元10和第二背光单元20分别包括第一导光板14和第二导光板24，第一导光板14和第二导光板24均对光线的出射具有匀光作用，而第三背光单元30没有导光板，因此在第三背光单元30的中心部位设置扩散粒子1231的浓度比在第一背光单元10和第二背光单元20的中心部位更大，以起到在第三背光单元30中心部位增强匀光的效果。\n\n[0044]在一些实施例中，第一背光单元10和第三背光单元30的连接部位、以及第二背光单元20和第三背光单元30的连接部位设置的扩散粒子1231的浓度最大，第三背光单元30的中心部位设置的扩散粒子1231的浓度其次大，在第一背光单元10和第二背光单元20的中心部位设置的扩散粒子1231的浓度最小。\n\n[0045]在一些实施例中，扩散片123为常规扩散剂涂布扩散片，厚度可以控制在50μm内。扩散片123对应的第一背光单元10和第三背光单元30组合拼接处扩散粒子1231的浓度较高，雾度在90％以上，以达到较好的拼缝遮蔽效果；扩散片123对应的微型发光二极管32光源面内区域扩散剂浓度略低，雾度在80％以上，作用是遮蔽灯影和匀光；扩散片123对应的第一背光单元10和第二背光单元20面内区域扩散剂浓度最低，雾度在60％以上。为支持可弯折背光模组100薄型化设计理念，图1所示的第三背光单元的柔性基底31的厚度可以在30μm内，微型发光二极管32和其保护胶厚度可以在60μm内，扩散片123厚度可以在50μm内，微结构扩散膜33厚度可以在80μm内，可弯折背光模组100综合整体最薄厚度可达0.22mm内。\n\n[0046]在一些实施例中，第一背光单元10还包括第一背框12，第一背框12位于第一导光板14下，第一背框12靠近第三背光30的一端设有第一延伸部121；第二背光单元20还包括第二背框22，第二背框22位于第二导光板24下，第二背框22靠近第三背光30的一端设有第二延伸部221；其中，第三背光单元30部分的位于第一延伸部121和第二延伸部221上。\n\n[0047]在一些实施例中，第三背光单元30的柔性基底31部分的位于第一延伸部121和第二延伸部221上。\n\n[0048]在一些实施例中，第一背光单元10和第二背光单元20为侧入式背光，背光外层的第一背框12和第二背框22为胶铁框，第一背框12和第二背框22大小比常规背光略大，使第三背光单元30的两侧可以粘接在第一背框12的第一延伸部121和第二背框22的第二延伸部221上形成支撑结构，第一延伸部121和第二延伸部221支撑第三背光单元30的部分，例如支撑第三背光单元30的柔性基底31的部分。第一背光单元10和第二背光单元20的厚度可根据第三背光单元30整体厚度进行调整，以满足第三背光单元30与扩散片123之间的间隙为预设间隙，例如第三背光单元30的微结构扩散膜33与扩散片123之间的间隙为无间隙。\n\n[0049]在一些实施例中，第一背光单元10和第二背光单元20为侧入式背光单元，多个发光二极管灯11或21设置于所述第一导光板14和第二导光板24的侧端面。具体的，多个第一发光二极管灯11设置于所述第一导光板14的侧端面，多个第二发光二极管灯21设置于所述第二导光板24的侧端面。\n\n[0050]在一些实施例中，第一背光单元10还包括第一上棱镜片17和第一下棱镜片16，可以提升第一背光单元10的亮度。在一些实施例中，第二背光单元20还包括第二上棱镜片27和第二下棱镜片26，可以提升第二背光单元20的亮度。具体的，第一下棱镜片16设于扩散片123上，第一上棱镜片17设于第一下棱镜片16上，第二下棱镜片26设于扩散片123上，第二上棱镜片27设于第二下棱镜片26上。\n\n[0051]在一些实施例中，可弯折背光模组100还包括反射层，具体的，第一背光单元10包括第一反射层13，第二背光单元20包括第二反射层23。第三背光单元30也可以包括反射层，具体的，第三背光单元30包括的反射层可以设置于微型发光二极管32靠近柔性基底31的一侧，也以设置于柔性基底31靠近微型发光二极管32的表面，也以设置于柔性基底31远离微型发光二极管32的一侧。\n\n[0052]在一些实施例中，可弯折背光模组100可以包括出光侧和与出光侧相反的背光侧，出光侧指可弯折背光模组100中光源的光线出射的方向，背光侧指与出光侧相背的非出光侧，例如在图1中，出光侧为扩散片123远离第一背框12、第二背框22的一侧，背光侧为第一背框12、第二背框22远离扩散片123的一侧。\n\n[0053]在一些实施例中，请参阅图1，第一背光单元10包括：第一背框12、设于第一背框12上的第一反射层13、设于第一反射层13上的第一导光板14、设于第一导光板14上的扩散片123、设于扩散片123上的第一下棱镜片16、设于第一下棱镜片16上的第一上棱镜片17、以及设于第一导光板14侧端面的第一发光二极管灯11。在一些实施例中，第二背光单元20包括：第二背框22、设于第二背框22上的第二反射层23、设于第二反射层23上的第二导光板24、设于第二导光板24上的扩散片123、设于扩散片123上的第二下棱镜片26、设于第二下棱镜片26上的第二上棱镜片27、以及设于第二导光板24侧端面的第二发光二极管灯21。在一些实施例中，第三背光单元30包括：柔性基底31、设于柔性基底31上的微型发光二极管32、设于微型发光二极管32上的微结构扩散膜33、设于微结构扩散膜33上的扩散片123。\n\n[0054]本申请还提供了一种显示面板1000，请参阅图5，显示面板1000包括上述任意一种可弯折背光模组100，还可以选择性的包括保护结构、显示部件等其他结构或部件600。\n\n[0055]本申请通过将常规背光与微型发光二极管背光结合制作可弯折背光模组，以解决现有常规方式的背光模组不能弯折的问题，可以使背光模组具有良好弯折性能，从而实现显示面板的良好弯折性能。\n\n[0056]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0057]以上对本申请实施例进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10853, 23907, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种mini LED背光模组的驱动方法。\n\n背景技术\n\n[0002]随着显示技术的发展，平板显示以其具有清晰度高、图像色彩好、省电、轻薄、便于携带等优点，已被广泛应用于信息显示产品中，具有广阔的市场前景。但随着面板产业驱动技术的日益成熟，机遇与挑战也随之而来，由于LCD(Liquid Crystal Display，液晶显示器)背光的局限性，如功耗大、对比度低等缺点，迫使背光朝着局部可控制(Local dimming)的方向发展，搭配mini LED背光模组能体现更好的对比度和HDR(High-Dynamic Range，高动态范围图像)显示效果。\n\n[0003]传统的mini LED背光采用静态驱动或PM(Passive Matrix，被动矩阵式)驱动方案实现的背光Local Dimming，由于每一分区需要单独使用一根数据线(data line)控制，使得分区数量普遍低于2000个分区且所需驱动IC(integrated circuit，集成电路)的数量过多，造成产品成本较高。\n\n[0004]目前，基于AM(Active Matrix，主动矩阵式)的mini LED背光驱动方法成为一种有效减少LED驱动芯片数量以实现降低成本的方案，但随着SMT(Surface MountedTechnology，表面贴装技术)的发展及mini LED背光降低成本的需求，单背光灯板的尺寸也越来越大，使得数据线(data line)在远近端的电阻电容负载(RC Loading)不一致，具体的，数据线近端RC Loading较小，数据线远端RC Loading较大，且加上电阻压降(IR drop)等效应，导致mini LED背光灯板在数据线的远近端的亮度会有差异，具体到mini LED背光灯板中，靠近数据线近端的部分较亮，靠近数据线远端的部分较暗，从而导致mini LED背光灯板亮暗不均的显示问题，严重影响背光的品质。\n\n发明内容\n\n[0005]本申请实施例提供一种mini LED背光模组的驱动方法，以解决现有mini LED背光模组中由于数据线在远近端的RC Loading不一致，导致mini LED背光灯板亮暗不均的技术问题。\n\n[0006]为解决上述问题，本申请提供的技术方案如下：\n\n[0007]本申请提供一种mini LED背光模组的驱动方法，包括以下步骤：\n\n[0008]步骤S100：将所述mini LED背光模组沿第一方向依次划分为M个分区，其中，所述mini LED背光模组包括控制单元和与所述控制单元连接的数据线，所述第一方向为所述数据线由靠近所述控制单元的一端向远离所述控制单元的一端延伸的方向，所述M个分区包括沿所述第一方向依次排列的第一分区、第二分区…第M-1分区、第M分区；\n\n[0009]步骤S200：将所述mini LED背光模组每一帧的周期划分为一调节子场和N个显示子场，驱动所述mini LED背光模组发光，其中，在所述调节子场的调节时间内，所述数据线对所述mini LED背光模组位于所述第1分区内的部分输出低电位，所述数据线对所述miniLED背光模组位于所述第M分区内的部分输出高电位；根据所述第1分区的亮度值和第M分区的亮度值，调整所述调节子场的大小，以获取使所述第1分区与第M分区的亮度差值在第一亮度阈值范围内时对应的所述调节子场的调节时间T调；\n\n[0010]步骤S300：将每一所述分区对应的所述调节子场划分为亮子场和暗子场，其中，在任一所述分区所对应的所述亮子场的时间内，所述数据线对所述mini LED背光模组位于该所述分区内的部分输出高电位，在任一所述分区所对应的所述暗子场的时间内，所述数据线对所述mini LED背光模组位于该所述分区内的部分输出低电位；\n\n[0011]驱动所述mini LED背光模组在不同灰阶模式下发光，在每一所述灰阶模式下，根据各所述分区的亮度值，分别调整各所述分区对应的所述亮子场或所述暗子场的大小，以获取在该灰阶模式下各所述分区与所述第1分区的亮度差值在第二亮度阈值范围内时所对应的所述亮子场的时间和所述暗子场的时间；\n\n[0012]步骤S400：根据各所述分区在不同所述灰阶模式下所对应的所述亮子场的时间和所述暗子场的时间，驱动所述mini LED背光模组发光。\n\n[0013]在本申请所提供mini LED背光模组的驱动方法中，在所述步骤S200中，根据所述第1分区的亮度值和第M分区的亮度值，调整所述调节子场的大小，以获取使所述第1分区与第M分区的亮度差值在第一亮度阈值范围内时对应的所述调节子场的所述调节时间T调，包括：\n\n[0014]当所述第1分区与所述第M分区的亮度差值在所述第一亮度阈值范围外且所述第1分区的亮度值大于所述第M分区的亮度值时，增加所述调节子场的调节时间；或者当所述第1分区与所述第M分区的亮度差值在所述第一亮度阈值范围外且所述第1分区的亮度值小于所述第M分区的亮度值时，减少所述调节子场的调节时间；驱动所述mini LED背光模组发光，其中，在增加或减少后的所述调节子场的调节时间内，所述数据线对所述mini LED背光模组位于所述第1分区内的部分输出低电位，所述数据线对所述mini LED背光模组位于所述第M分区内的部分输出高电位；或\n\n[0015]当所述第1分区与第M分区的亮度差值在第一亮度阈值范围内时，则获取该次驱动所述mini LED背光模组的过程中对应的所述调节子场的调节时间T调。\n\n[0016]在本申请所提供mini LED背光模组的驱动方法中，在所述步骤S200中，每一次驱动所述mini LED背光模组发光之前均包括：计算各所述显示子场的时间：\n\n[0017]T1＝(1/f－T调)/(2N－1)\n\n[0018]Tn＝2n-1T1\n\n[0019]其中，T1为第一显示子场的时间，Tn为第n显示子场的时间，2≤n≤N，f为所述miniLED背光模组的显示频率。\n\n[0020]在本申请所提供mini LED背光模组的驱动方法中，所述当所述第1分区与所述第M分区的亮度差值在所述第一亮度阈值范围外且所述第1分区的亮度值大于所述第M分区的亮度值时，增加所述调节子场的调节时间中，每一次增加的时间为T调增；\n\n[0021]所述当所述第1分区与所述第M分区的亮度差值在所述第一亮度阈值范围外且所述第1分区的亮度值小于所述第M分区的亮度值时，减少所述调节子场的调节时间中，每一次减少的时间为T调减；\n\n[0022]其中，T调增＝T调减。\n\n[0023]在本申请所提供mini LED背光模组的驱动方法中，在所述步骤S300中，将每一所述分区对应的所述调节子场划分为亮子场和暗子场中：\n\n[0024]所述第1分区所对应的所述亮子场的时间为0，所述第M分区所对应的所述亮子场的时间与所述调节子场的时间相等。\n\n[0025]在本申请所提供mini LED背光模组的驱动方法中，任意两所述分区中，其中一靠近所述控制单元的所述分区所对应的所述亮子场的时间小于另一远离所述控制单元的所述分区所对应的所述亮子场的时间。\n\n[0026]在本申请所提供mini LED背光模组的驱动方法中，在所述步骤S300中，在每一所述灰阶模式下，根据各所述分区的亮度值，分别调整各所述分区对应的所述亮子场或所述暗子场的大小，以获取在该灰阶模式下各所述分区与所述第1分区的亮度差值在第二亮度阈值范围内时所对应的所述亮子场的时间和所述暗子场的时间，包括：\n\n[0027]驱动所述mini LED背光模组在第L灰阶模式下发光，其中，所述第L灰阶模式所对应的灰阶值为L，0≤L≤2N－1，所述mini LED背光模组的所述灰阶模式的数量为2N个；\n\n[0028]在第L灰阶模式下，根据各所述分区的亮度值，分别调整各所述分区对应的所述亮子场或所述暗子场的大小，以获取在第L灰阶模式下各所述分区与所述第1分区的亮度差值在第二亮度阈值范围内时所对应的所述亮子场的时间和所述暗子场的时间。\n\n[0029]在本申请所提供mini LED背光模组的驱动方法中，在所述步骤S300中，驱动所述mini LED背光模组在不同灰阶模式下发光，包括：\n\n[0030]设置灰阶值L的初始值为1和调节步距灰阶S；\n\n[0031]在相邻两次以不同灰阶模式驱动所述mini LED背光模组发光的过程中，后一次采用的所述灰阶模式中的灰阶值减去前一次采用的所述灰阶模式中的灰阶值为所述调节步距灰阶S。\n\n[0032]在本申请所提供mini LED背光模组的驱动方法中，所述在第L灰阶模式下，根据各所述分区的亮度值，分别调整各所述分区对应的所述亮子场或所述暗子场的大小，以获取在第L灰阶模式下各所述分区与所述第1分区的亮度差值在第二亮度阈值范围内时所对应的所述亮子场的时间和所述暗子场的时间，包括：\n\n[0033]在所述第L灰阶模式下，当所述第1分区与所述第m分区的亮度差值在所述第二亮度阈值范围外且所述第1分区的亮度值大于所述第m分区的亮度值时，则增加所述第m分区所对应的所述亮子场的时间或减少所述第m分区所对应的所述暗子场的时间；或者当所述第1分区与所述第m分区的亮度差值在所述第二亮度阈值范围外且所述第1分区的亮度值小于所述第m分区的亮度值时，则减少所述第m分区所对应的所述亮子场的时间或增加所述第m分区所对应的所述暗子场的时间；根据调整后的所述第m分区所对应的所述亮子场的时间和所述第m分区所对应的所述暗子场的时间，驱动所述mini LED背光模组在所述第L灰阶模式下发光；或\n\n[0034]在所述第L灰阶模式下，当所述第1分区与所述第m分区的亮度差值在所述第二亮度阈值范围内时，则获取该次驱动所述mini LED背光模组的过程中所述第m分区所对应的所述亮子场的时间T亮(m,L)和所述暗子场的时间T暗(m,L)，其中，m为分区号，2≤m≤M。\n\n[0035]在本申请所提供mini LED背光模组的驱动方法中，在同一所述灰阶模式下，设置分区号m的初始值为2；\n\n[0036]在相邻两次调整不同所述分区对应的所述亮子场或所述暗子场的大小的过程中，后一次调整的所述分区的分区号比前一次调整的所述分区的分区号大1。\n\n[0037]本申请的有益效果为：通过将mini LED背光模组沿数据线延伸的方向划分为多个分区，并在mini LED背光模组每一帧的周期中划分出调节子场，根据不同灰阶模式的情况，调节不同分区对应的调节子场中亮子场或暗子场的大小，使得各分区显示的亮度在一设定的亮度阈值范围内，从而实现所述mini LED背光模组显示亮度的均匀化。\n\n附图说明\n\n[0038]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0039]图1为本申请一实施例中mini LED背光模组区域划分的结构示意图；\n\n[0040]图2为本申请一实施例中mini LED背光模组的驱动方法的流程示意框图；\n\n[0041]图3为本申请一实施例中mini LED背光模组的驱动方法的逻辑结构示意框图。\n\n具体实施方式\n\n[0042]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0043]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0044]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0045]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0046]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0047]本申请提供一种mini LED背光模组的驱动方法，如图1至图3所示，包括以下步骤：\n\n[0048]步骤S100：将所述mini LED背光模组沿第一方向100依次划分为M个分区，其中，所述mini LED背光模组包括控制单元和与所述控制单元连接的数据线10，所述第一方向100为所述数据线10由靠近所述控制单元的一端向远离所述控制单元的一端延伸的方向，所述M个分区包括沿所述第一方向100依次排列的第一分区、第二分区…第M-1分区、第M分区；\n\n[0049]可以理解的是，所述第一方向100即为远离所述控制单元的方向，具体的，所述mini LED背光模组中的mini LED越远离所述控制单元，则对应所需的数据线10长度越长，导致RC Loading越大，导致所述mini LED背光模组在数据线10的远近端的亮度会有差异，本实施例中，将所述mini LED背光模组沿第一方向100依次划分为M个分区，所述M个分区包括沿所述第一方向100依次排列的第一分区、第二分区…第M-1分区、第M分区，显然，离所述控制单元距离最近的为所述第一分区，也即所述第一分区中的mini LED与所述控制单元之间连接的数据线10最短，反之，所述第M分区离所述控制单元距离最远，所述第M分区中的mini LED与所述控制单元之间连接的数据线10最长，因此，将所述mini LED背光模组沿第一方向100依次划分为M个分区，便于对各所述分区进行分别控制。\n\n[0050]步骤S200：将所述mini LED背光模组每一帧的周期划分为一调节子场和N个显示子场，驱动所述mini LED背光模组发光，其中，在所述调节子场的调节时间内，所述数据线10对所述mini LED背光模组位于所述第1分区内的部分输出低电位，所述数据线10对所述mini LED背光模组位于所述第M分区内的部分输出高电位；根据所述第1分区的亮度值和第M分区的亮度值，调整所述调节子场的大小，以获取使所述第1分区与第M分区的亮度差值在第一亮度阈值范围内时对应的所述调节子场的调节时间T调；\n\n[0051]步骤S300：将每一所述分区对应的所述调节子场划分为亮子场和暗子场，其中，在任一所述分区所对应的所述亮子场的时间内，所述数据线10对所述mini LED背光模组位于该所述分区内的部分输出高电位，在任一所述分区所对应的所述暗子场的时间内，所述数据线10对所述mini LED背光模组位于该所述分区内的部分输出低电位；\n\n[0052]驱动所述mini LED背光模组在不同灰阶模式下发光，在每一所述灰阶模式下，根据各所述分区的亮度值，分别调整各所述分区对应的所述亮子场或所述暗子场的大小，以获取在该灰阶模式下各所述分区与所述第1分区的亮度差值在第二亮度阈值范围内时所对应的所述亮子场的时间和所述暗子场的时间；\n\n[0053]步骤S400：根据各所述分区在不同所述灰阶模式下所对应的所述亮子场的时间和所述暗子场的时间，驱动所述mini LED背光模组发光。\n\n[0054]可以理解的是，目前，基于AM(Active Matrix，主动矩阵式)的mini LED背光驱动方法成为一种有效减少LED驱动芯片数量以实现降低成本的方案，但随着SMT(SurfaceMounted Technology，表面贴装技术)的发展及mini LED背光降低成本的需求，单背光灯板的尺寸也越来越大，使得数据线10(data line)在远近端的电阻电容负载(RC Loading)不一致，具体的，数据线10近端RC Loading较小，数据线10远端RC Loading较大，且加上电阻压降(IR drop)等效应，导致mini LED背光灯板在数据线10的远近端的亮度会有差异，具体到mini LED背光灯板中，靠近数据线10近端的部分较亮，靠近数据线10远端的部分较暗，从而导致mini LED背光灯板亮暗不均的显示问题，严重影响背光的品质。本实施例中，通过将mini LED背光模组沿数据线10延伸的方向划分为多个分区，并在mini LED背光模组每一帧的周期中划分出调节子场，根据不同灰阶模式的情况，调节不同分区对应的调节子场中亮子场或暗子场的大小，使得各分区显示的亮度在一设定的亮度阈值范围内，从而实现所述mini LED背光模组显示亮度的均匀化。\n\n[0055]值得注意的是，在步骤S200中，将所述mini LED背光模组每一帧的周期划分为一调节子场和N个显示子场，所述调节子场用于调节所述mini LED背光模组显示的每一帧画面的亮暗，并且，在步骤S300中，将所述调节子场划分为亮子场和暗子场，具体在所述miniLED背光模组工作时，所述数据线10在所述亮子场的时间段内输出高电位，在所述暗子场的时间段内输出低电位，从而可以在不同灰阶模式的条件下，通过调节不同所述分区对应的所述调节子场中亮子场或暗子场的大小，实现所述mini LED背光模组显示亮度的均匀化，此外，在本申请中如无其它特殊说明，具体以1G1D架构、频率为240Hz，N＝6位(bit)的miniLED背光模组为例，本实施例中，将所述mini LED背光模组沿第一方向100依次划分为4个分区，也即M＝4，将所述mini LED背光模组每一帧的周期划分为一调节子场和6个显示子场。而驱动所述mini LED背光模组在不同灰阶模式下发光中，具体所述灰阶模式的数量为26个。\n\n[0056]在一实施例中，如图2至图3所示，在所述步骤S200中，根据所述第1分区的亮度值和第M分区的亮度值，调整所述调节子场的大小，以获取使所述第1分区与第M分区的亮度差值在第一亮度阈值范围内时对应的所述调节子场的所述调节时间T调，包括：\n\n[0057]当所述第1分区与所述第M分区的亮度差值在所述第一亮度阈值范围外且所述第1分区的亮度值大于所述第M分区的亮度值时，增加所述调节子场的调节时间；或者当所述第1分区与所述第M分区的亮度差值在所述第一亮度阈值范围外且所述第1分区的亮度值小于所述第M分区的亮度值时，减少所述调节子场的调节时间；驱动所述mini LED背光模组发光，其中，在增加或减少后的所述调节子场的调节时间内，所述数据线10对所述mini LED背光模组位于所述第1分区内的部分输出低电位，所述数据线10对所述mini LED背光模组位于所述第M分区内的部分输出高电位；或\n\n[0058]当所述第1分区与第M分区的亮度差值在第一亮度阈值范围内时，则获取该次驱动所述mini LED背光模组的过程中对应的所述调节子场的调节时间T调。\n\n[0059]可以理解的是，在本实施例中，M＝4，所述第1分区的亮度值和第M分区的亮度值，也即是所述第1分区的亮度值和所述第4分区的亮度值，具体的，在调节所述调节子场的大小时，在驱动所述mini LED背光模组发光时，通过在所述调节子场的调节时间内，使所述数据线10对所述mini LED背光模组位于所述第1分区内的部分输出低电位，并且使所述数据线10对所述mini LED背光模组位于所述第M分区内的部分输出高电位，最大化的减小所述第1分区与所述第M分区的差异化，再对所述调节子场的大小进行调整，更加便于使所述第1分区与第M分区的亮度差值在第一亮度阈值范围内，从而方便更快的获取所述第1分区与第M分区的亮度差值在第一亮度阈值范围内时对应的所述调节子场的调节时间T调。\n\n[0060]值得注意的是，在调整所述调节子场的调节时间后，然后以调整过后的所述调节子场的调节时间重新驱动所述mini LED背光模组发光，其中，在增加或减少后的所述调节子场的调节时间内，所述数据线10对所述mini LED背光模组位于所述第1分区内的部分输出低电位，所述数据线10对所述mini LED背光模组位于所述第M分区内的部分输出高电位；直至所述第1分区与第M分区的亮度差值在第一亮度阈值范围内。\n\n[0061]在一实施例中，在所述步骤S200中，每一次驱动所述mini LED背光模组发光之前均包括：计算各所述显示子场的时间：\n\n[0062]T1＝(1/f－T调)/(2N－1)\n\n[0063]Tn＝2n-1T1\n\n[0064]其中，T1为第一显示子场的时间，Tn为第n显示子场的时间，2≤n≤N，f为所述miniLED背光模组的显示频率。\n\n[0065]可以理解的是，在本实施例中，f＝240Hz，N＝6,各所述显示子场之间的关系为：T6＝2T5＝4T4＝8T3＝16T2＝32T1；在所述步骤S200中，每一次驱动所述mini LED背光模组发光，都需要结合各所述显示子场的时间。\n\n[0066]在一实施例中，所述当所述第1分区与所述第M分区的亮度差值在所述第一亮度阈值范围外且所述第1分区的亮度值大于所述第M分区的亮度值时，增加所述调节子场的调节时间中，每一次增加的时间为T调增；\n\n[0067]所述当所述第1分区与所述第M分区的亮度差值在所述第一亮度阈值范围外且所述第1分区的亮度值小于所述第M分区的亮度值时，减少所述调节子场的调节时间中，每一次减少的时间为T调减；\n\n[0068]其中，T调增＝T调减。\n\n[0069]可以理解的是，在具体调整所述调节子场的调节时间时，T调增与T调减可以相等，也可以不相等，本实施例中，T调增与T调减设置相等，便于统一对所述调节子场调整的精度，避免T调增与T调减之间的差异过大，在具体使用时，可根据具体情况，对所述T调增和T调减进行具体设置。\n\n[0070]在一实施例中，在所述步骤S300中，将每一所述分区对应的所述调节子场划分为亮子场和暗子场中：\n\n[0071]所述第1分区所对应的所述亮子场的时间为0，所述第M分区所对应的所述亮子场的时间与所述调节子场的时间相等。\n\n[0072]可以理解的是，任一分区所对应的所述调节子场的时间等于所述亮子场的时间与所述暗子场的时间之和，将所述第1分区所对应的所述亮子场的时间设置为0，也即所述第1分区所对应的所述调节子场全部划分为所述暗子场，而所述第M分区所对应的所述亮子场的时间与所述调节子场的时间相等，也即所述第M分区所对应的所述暗子场的时间为0，所述第M分区所对应的所述调节子场全部划分为所述亮子场。\n\n[0073]在一实施例中，任意两所述分区中，其中一靠近所述控制单元的所述分区所对应的所述亮子场的时间小于另一远离所述控制单元的所述分区所对应的所述亮子场的时间。可以理解的是，越靠近所述控制单元，所述分区中的mini LED与所述控制单元之间连接的数据线10越短，对应所受到的RC Loading的影响越小，因此，无论是初次将所述调节子场划分为亮子场和暗子场，还是最后计算得到各所述分区所对应的亮子场时，连接所述数据线10的长度越短的所述分区，对应划分的所述亮子场的时间越小。\n\n[0074]在一实施例中，如图3所示，在所述步骤S300中，在每一所述灰阶模式下，根据各所述分区的亮度值，分别调整各所述分区对应的所述亮子场或所述暗子场的大小，以获取在该灰阶模式下各所述分区与所述第1分区的亮度差值在第二亮度阈值范围内时所对应的所述亮子场的时间和所述暗子场的时间，包括：\n\n[0075]驱动所述mini LED背光模组在第L灰阶模式下发光，其中，所述第L灰阶模式所对应的灰阶值为L，0≤L≤2N－1，所述mini LED背光模组的所述灰阶模式的数量为2N个；\n\n[0076]在第L灰阶模式下，根据各所述分区的亮度值，分别调整各所述分区对应的所述亮子场或所述暗子场的大小，以获取在第L灰阶模式下各所述分区与所述第1分区的亮度差值在第二亮度阈值范围内时所对应的所述亮子场的时间和所述暗子场的时间。\n\n[0077]可以理解的是，本实施例中，所述mini LED背光模组的所述灰阶模式的数量为26个，并且，所述第L灰阶模式所对应的灰阶值为L，0≤L≤2N－1，具体灰阶值L包括0、1…26－2、26－1；显然，需要在每一所述灰阶模式下，获取各所述分区与所述第1分区的亮度差值在第二亮度阈值范围内时所对应的所述亮子场的时间和所述暗子场的时间，其中，当所述灰阶值为L＝0时，此时，所述mini LED背光模组呈全黑模式，因此不用计算各所述分区对应的所述亮子场的时间和所述暗子场的时间。\n\n[0078]在一实施例中，如图3所示，在所述步骤S300中，驱动所述mini LED背光模组在不同灰阶模式下发光，包括：\n\n[0079]设置灰阶值L的初始值为1和调节步距灰阶S；\n\n[0080]在相邻两次以不同灰阶模式驱动所述mini LED背光模组发光的过程中，后一次采用的所述灰阶模式中的灰阶值减去前一次采用的所述灰阶模式中的灰阶值为所述调节步距灰阶S。\n\n[0081]可以理解的是，将所述灰阶值L的初始值设为1，每获取一个所述灰阶模式下各所述分区所对应的所述亮子场的时间和所述暗子场的时间，则进入下一所述灰阶模式，其中，在相邻两次以不同灰阶模式驱动所述mini LED背光模组发光的过程中，后一次采用的所述灰阶模式中的灰阶值减去前一次采用的所述灰阶模式中的灰阶值为所述调节步距灰阶S；值得注意的是，还包括一灰阶判定步骤，当本次的所述灰阶模式的灰阶值L为最大值时，本实施例中，也即是所述灰阶值L＝26－1时，则执行步骤S400。\n\n[0082]在一实施例中，所述在第L灰阶模式下，根据各所述分区的亮度值，分别调整各所述分区对应的所述亮子场或所述暗子场的大小，以获取在第L灰阶模式下各所述分区与所述第1分区的亮度差值在第二亮度阈值范围内时所对应的所述亮子场的时间和所述暗子场的时间，包括：\n\n[0083]在所述第L灰阶模式下，当所述第1分区与所述第m分区的亮度差值在所述第二亮度阈值范围外且所述第1分区的亮度值大于所述第m分区的亮度值时，则增加所述第m分区所对应的所述亮子场的时间或减少所述第m分区所对应的所述暗子场的时间；或者当所述第1分区与所述第m分区的亮度差值在所述第二亮度阈值范围外且所述第1分区的亮度值小于所述第m分区的亮度值时，则减少所述第m分区所对应的所述亮子场的时间或增加所述第m分区所对应的所述暗子场的时间；根据调整后的所述第m分区所对应的所述亮子场的时间和所述第m分区所对应的所述暗子场的时间，驱动所述mini LED背光模组在所述第L灰阶模式下发光；或\n\n[0084]在所述第L灰阶模式下，当所述第1分区与所述第m分区的亮度差值在所述第二亮度阈值范围内时，则获取该次驱动所述mini LED背光模组的过程中所述第m分区所对应的所述亮子场的时间T亮(m,L)和所述暗子场的时间T暗(m,L)，其中，m为分区号，2≤m≤M。\n\n[0085]可以理解的是，在每一次调整所述第m分区所对应的所述亮子场的时间或所述第m分区所对应的所述暗子场的时间后，在重新驱动所述mini LED背光模组的过程中，需要根据调整后的所述第m分区所对应的所述亮子场的时间和所述第m分区所对应的所述暗子场的时间，驱动所述mini LED背光模组在所述第L灰阶模式下发光；并且，在本实施例中，在同一所述灰阶模式下，设置分区号m的初始值为2；\n\n[0086]在相邻两次调整不同所述分区对应的所述亮子场或所述暗子场的大小的过程中，后一次调整的所述分区的分区号比前一次调整的所述分区的分区号大1。\n\n[0087]可以理解的是，将所述分区号m的初始值设置为2，每获取一次在第L灰阶模式下第m分区所对应的所述亮子场的时间和所述暗子场的时间之后，则进行获取下一所述分区所对应的所述亮子场的时间和所述暗子场的时间，具体的，在相邻两次调整不同所述分区对应的所述亮子场或所述暗子场的大小的过程中，后一次调整的所述分区的分区号比前一次调整的所述分区的分区号大1；值得注意的是，还包括一分区判定步骤，当本次的第m分区中的分区号m为最大值时，本实施例中，也即是当所述分区号m＝M＝4时，则在当前所述灰阶模式下，完成了获取各所述分区与所述第1分区的亮度差值在第二亮度阈值范围内时所对应的所述亮子场的时间和所述暗子场的时间。\n\n[0088]本申请通过将mini LED背光模组沿数据线10延伸的方向划分为多个分区，并在mini LED背光模组每一帧的周期中划分出调节子场，根据不同灰阶模式的情况，调节不同分区对应的调节子场中亮子场或暗子场的大小，使得各分区显示的亮度在一设定的亮度阈值范围内，从而实现所述mini LED背光模组显示亮度的均匀化。\n\n[0089]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0090]本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种mini LED背光模组的驱动方法。\n\n背景技术\n\n[0002]随着显示技术的发展，平板显示以其具有清晰度高、图像色彩好、省电、轻薄、便于携带等优点，已被广泛应用于信息显示产品中，具有广阔的市场前景。但随着面板产业驱动技术的日益成熟，机遇与挑战也随之而来，由于LCD(Liquid Crystal Display，液晶显示器)背光的局限性，如功耗大、对比度低等缺点，迫使背光朝着局部可控制(Local dimming)的方向发展，搭配mini LED背光模组能体现更好的对比度和HDR(High-Dynamic Range，高动态范围图像)显示效果。\n\n[0003]传统的mini LED背光采用静态驱动或PM(Passive Matrix，被动矩阵式)驱动方案实现的背光Local Dimming，由于每一分区需要单独使用一根数据线(data line)控制，使得分区数量普遍低于2000个分区且所需驱动IC(integrated circuit，集成电路)的数量过多，造成产品成本较高。\n\n[0004]目前，基于AM(Active Matrix，主动矩阵式)的mini LED背光驱动方法成为一种有效减少LED驱动芯片数量以实现降低成本的方案，但随着SMT(Surface MountedTechnology，表面贴装技术)的发展及mini LED背光降低成本的需求，单背光灯板的尺寸也越来越大，使得数据线(data line)在远近端的电阻电容负载(RC Loading)不一致，具体的，数据线近端RC Loading较小，数据线远端RC Loading较大，且加上电阻压降(IR drop)等效应，导致mini LED背光灯板在数据线的远近端的亮度会有差异，具体到mini LED背光灯板中，靠近数据线近端的部分较亮，靠近数据线远端的部分较暗，从而导致mini LED背光灯板亮暗不均的显示问题，严重影响背光的品质。\n\n发明内容\n\n[0005]本申请实施例提供一种mini LED背光模组的驱动方法，以解决现有mini LED背光模组中由于数据线在远近端的RC Loading不一致，导致mini LED背光灯板亮暗不均的技术问题。\n\n[0006]为解决上述问题，本申请提供的技术方案如下：\n\n[0007]本申请提供一种mini LED背光模组的驱动方法，包括以下步骤：\n\n[0008]步骤S100：将所述mini LED背光模组沿第一方向依次划分为M个分区，其中，所述mini LED背光模组包括控制单元和与所述控制单元连接的数据线，所述第一方向为所述数据线由靠近所述控制单元的一端向远离所述控制单元的一端延伸的方向，所述M个分区包括沿所述第一方向依次排列的第一分区、第二分区…第M-1分区、第M分区；\n\n[0009]步骤S200：将所述mini LED背光模组每一帧的周期划分为一调节子场和N个显示子场，驱动所述mini LED背光模组发光，其中，在所述调节子场的调节时间内，所述数据线对所述mini LED背光模组位于所述第1分区内的部分输出低电位，所述数据线对所述miniLED背光模组位于所述第M分区内的部分输出高电位；根据所述第1分区的亮度值和第M分区的亮度值，调整所述调节子场的大小，以获取使所述第1分区与第M分区的亮度差值在第一亮度阈值范围内时对应的所述调节子场的调节时间T调；\n\n[0010]步骤S300：将每一所述分区对应的所述调节子场划分为亮子场和暗子场，其中，在任一所述分区所对应的所述亮子场的时间内，所述数据线对所述mini LED背光模组位于该所述分区内的部分输出高电位，在任一所述分区所对应的所述暗子场的时间内，所述数据线对所述mini LED背光模组位于该所述分区内的部分输出低电位；\n\n[0011]驱动所述mini LED背光模组在不同灰阶模式下发光，在每一所述灰阶模式下，根据各所述分区的亮度值，分别调整各所述分区对应的所述亮子场或所述暗子场的大小，以获取在该灰阶模式下各所述分区与所述第1分区的亮度差值在第二亮度阈值范围内时所对应的所述亮子场的时间和所述暗子场的时间；\n\n[0012]步骤S400：根据各所述分区在不同所述灰阶模式下所对应的所述亮子场的时间和所述暗子场的时间，驱动所述mini LED背光模组发光。\n\n[0013]在本申请所提供mini LED背光模组的驱动方法中，在所述步骤S200中，根据所述第1分区的亮度值和第M分区的亮度值，调整所述调节子场的大小，以获取使所述第1分区与第M分区的亮度差值在第一亮度阈值范围内时对应的所述调节子场的所述调节时间T调，包括：\n\n[0014]当所述第1分区与所述第M分区的亮度差值在所述第一亮度阈值范围外且所述第1分区的亮度值大于所述第M分区的亮度值时，增加所述调节子场的调节时间；或者当所述第1分区与所述第M分区的亮度差值在所述第一亮度阈值范围外且所述第1分区的亮度值小于所述第M分区的亮度值时，减少所述调节子场的调节时间；驱动所述mini LED背光模组发光，其中，在增加或减少后的所述调节子场的调节时间内，所述数据线对所述mini LED背光模组位于所述第1分区内的部分输出低电位，所述数据线对所述mini LED背光模组位于所述第M分区内的部分输出高电位；或\n\n[0015]当所述第1分区与第M分区的亮度差值在第一亮度阈值范围内时，则获取该次驱动所述mini LED背光模组的过程中对应的所述调节子场的调节时间T调。\n\n[0016]在本申请所提供mini LED背光模组的驱动方法中，在所述步骤S200中，每一次驱动所述mini LED背光模组发光之前均包括：计算各所述显示子场的时间：\n\n[0017]T1＝(1/f－T调)/(2N－1)\n\n[0018]Tn＝2n-1T1\n\n[0019]其中，T1为第一显示子场的时间，Tn为第n显示子场的时间，2≤n≤N，f为所述miniLED背光模组的显示频率。\n\n[0020]在本申请所提供mini LED背光模组的驱动方法中，所述当所述第1分区与所述第M分区的亮度差值在所述第一亮度阈值范围外且所述第1分区的亮度值大于所述第M分区的亮度值时，增加所述调节子场的调节时间中，每一次增加的时间为T调增；\n\n[0021]所述当所述第1分区与所述第M分区的亮度差值在所述第一亮度阈值范围外且所述第1分区的亮度值小于所述第M分区的亮度值时，减少所述调节子场的调节时间中，每一次减少的时间为T调减；\n\n[0022]其中，T调增＝T调减。\n\n[0023]在本申请所提供mini LED背光模组的驱动方法中，在所述步骤S300中，将每一所述分区对应的所述调节子场划分为亮子场和暗子场中：\n\n[0024]所述第1分区所对应的所述亮子场的时间为0，所述第M分区所对应的所述亮子场的时间与所述调节子场的时间相等。\n\n[0025]在本申请所提供mini LED背光模组的驱动方法中，任意两所述分区中，其中一靠近所述控制单元的所述分区所对应的所述亮子场的时间小于另一远离所述控制单元的所述分区所对应的所述亮子场的时间。\n\n[0026]在本申请所提供mini LED背光模组的驱动方法中，在所述步骤S300中，在每一所述灰阶模式下，根据各所述分区的亮度值，分别调整各所述分区对应的所述亮子场或所述暗子场的大小，以获取在该灰阶模式下各所述分区与所述第1分区的亮度差值在第二亮度阈值范围内时所对应的所述亮子场的时间和所述暗子场的时间，包括：\n\n[0027]驱动所述mini LED背光模组在第L灰阶模式下发光，其中，所述第L灰阶模式所对应的灰阶值为L，0≤L≤2N－1，所述mini LED背光模组的所述灰阶模式的数量为2N个；\n\n[0028]在第L灰阶模式下，根据各所述分区的亮度值，分别调整各所述分区对应的所述亮子场或所述暗子场的大小，以获取在第L灰阶模式下各所述分区与所述第1分区的亮度差值在第二亮度阈值范围内时所对应的所述亮子场的时间和所述暗子场的时间。\n\n[0029]在本申请所提供mini LED背光模组的驱动方法中，在所述步骤S300中，驱动所述mini LED背光模组在不同灰阶模式下发光，包括：\n\n[0030]设置灰阶值L的初始值为1和调节步距灰阶S；\n\n[0031]在相邻两次以不同灰阶模式驱动所述mini LED背光模组发光的过程中，后一次采用的所述灰阶模式中的灰阶值减去前一次采用的所述灰阶模式中的灰阶值为所述调节步距灰阶S。\n\n[0032]在本申请所提供mini LED背光模组的驱动方法中，所述在第L灰阶模式下，根据各所述分区的亮度值，分别调整各所述分区对应的所述亮子场或所述暗子场的大小，以获取在第L灰阶模式下各所述分区与所述第1分区的亮度差值在第二亮度阈值范围内时所对应的所述亮子场的时间和所述暗子场的时间，包括：\n\n[0033]在所述第L灰阶模式下，当所述第1分区与所述第m分区的亮度差值在所述第二亮度阈值范围外且所述第1分区的亮度值大于所述第m分区的亮度值时，则增加所述第m分区所对应的所述亮子场的时间或减少所述第m分区所对应的所述暗子场的时间；或者当所述第1分区与所述第m分区的亮度差值在所述第二亮度阈值范围外且所述第1分区的亮度值小于所述第m分区的亮度值时，则减少所述第m分区所对应的所述亮子场的时间或增加所述第m分区所对应的所述暗子场的时间；根据调整后的所述第m分区所对应的所述亮子场的时间和所述第m分区所对应的所述暗子场的时间，驱动所述mini LED背光模组在所述第L灰阶模式下发光；或\n\n[0034]在所述第L灰阶模式下，当所述第1分区与所述第m分区的亮度差值在所述第二亮度阈值范围内时，则获取该次驱动所述mini LED背光模组的过程中所述第m分区所对应的所述亮子场的时间T亮(m,L)和所述暗子场的时间T暗(m,L)，其中，m为分区号，2≤m≤M。\n\n[0035]在本申请所提供mini LED背光模组的驱动方法中，在同一所述灰阶模式下，设置分区号m的初始值为2；\n\n[0036]在相邻两次调整不同所述分区对应的所述亮子场或所述暗子场的大小的过程中，后一次调整的所述分区的分区号比前一次调整的所述分区的分区号大1。\n\n[0037]本申请的有益效果为：通过将mini LED背光模组沿数据线延伸的方向划分为多个分区，并在mini LED背光模组每一帧的周期中划分出调节子场，根据不同灰阶模式的情况，调节不同分区对应的调节子场中亮子场或暗子场的大小，使得各分区显示的亮度在一设定的亮度阈值范围内，从而实现所述mini LED背光模组显示亮度的均匀化。\n\n附图说明\n\n[0038]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0039]图1为本申请一实施例中mini LED背光模组区域划分的结构示意图；\n\n[0040]图2为本申请一实施例中mini LED背光模组的驱动方法的流程示意框图；\n\n[0041]图3为本申请一实施例中mini LED背光模组的驱动方法的逻辑结构示意框图。\n\n具体实施方式\n\n[0042]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0043]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0044]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0045]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0046]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0047]本申请提供一种mini LED背光模组的驱动方法，如图1至图3所示，包括以下步骤：\n\n[0048]步骤S100：将所述mini LED背光模组沿第一方向100依次划分为M个分区，其中，所述mini LED背光模组包括控制单元和与所述控制单元连接的数据线10，所述第一方向100为所述数据线10由靠近所述控制单元的一端向远离所述控制单元的一端延伸的方向，所述M个分区包括沿所述第一方向100依次排列的第一分区、第二分区…第M-1分区、第M分区；\n\n[0049]可以理解的是，所述第一方向100即为远离所述控制单元的方向，具体的，所述mini LED背光模组中的mini LED越远离所述控制单元，则对应所需的数据线10长度越长，导致RC Loading越大，导致所述mini LED背光模组在数据线10的远近端的亮度会有差异，本实施例中，将所述mini LED背光模组沿第一方向100依次划分为M个分区，所述M个分区包括沿所述第一方向100依次排列的第一分区、第二分区…第M-1分区、第M分区，显然，离所述控制单元距离最近的为所述第一分区，也即所述第一分区中的mini LED与所述控制单元之间连接的数据线10最短，反之，所述第M分区离所述控制单元距离最远，所述第M分区中的mini LED与所述控制单元之间连接的数据线10最长，因此，将所述mini LED背光模组沿第一方向100依次划分为M个分区，便于对各所述分区进行分别控制。\n\n[0050]步骤S200：将所述mini LED背光模组每一帧的周期划分为一调节子场和N个显示子场，驱动所述mini LED背光模组发光，其中，在所述调节子场的调节时间内，所述数据线10对所述mini LED背光模组位于所述第1分区内的部分输出低电位，所述数据线10对所述mini LED背光模组位于所述第M分区内的部分输出高电位；根据所述第1分区的亮度值和第M分区的亮度值，调整所述调节子场的大小，以获取使所述第1分区与第M分区的亮度差值在第一亮度阈值范围内时对应的所述调节子场的调节时间T调；\n\n[0051]步骤S300：将每一所述分区对应的所述调节子场划分为亮子场和暗子场，其中，在任一所述分区所对应的所述亮子场的时间内，所述数据线10对所述mini LED背光模组位于该所述分区内的部分输出高电位，在任一所述分区所对应的所述暗子场的时间内，所述数据线10对所述mini LED背光模组位于该所述分区内的部分输出低电位；\n\n[0052]驱动所述mini LED背光模组在不同灰阶模式下发光，在每一所述灰阶模式下，根据各所述分区的亮度值，分别调整各所述分区对应的所述亮子场或所述暗子场的大小，以获取在该灰阶模式下各所述分区与所述第1分区的亮度差值在第二亮度阈值范围内时所对应的所述亮子场的时间和所述暗子场的时间；\n\n[0053]步骤S400：根据各所述分区在不同所述灰阶模式下所对应的所述亮子场的时间和所述暗子场的时间，驱动所述mini LED背光模组发光。\n\n[0054]可以理解的是，目前，基于AM(Active Matrix，主动矩阵式)的mini LED背光驱动方法成为一种有效减少LED驱动芯片数量以实现降低成本的方案，但随着SMT(SurfaceMounted Technology，表面贴装技术)的发展及mini LED背光降低成本的需求，单背光灯板的尺寸也越来越大，使得数据线10(data line)在远近端的电阻电容负载(RC Loading)不一致，具体的，数据线10近端RC Loading较小，数据线10远端RC Loading较大，且加上电阻压降(IR drop)等效应，导致mini LED背光灯板在数据线10的远近端的亮度会有差异，具体到mini LED背光灯板中，靠近数据线10近端的部分较亮，靠近数据线10远端的部分较暗，从而导致mini LED背光灯板亮暗不均的显示问题，严重影响背光的品质。本实施例中，通过将mini LED背光模组沿数据线10延伸的方向划分为多个分区，并在mini LED背光模组每一帧的周期中划分出调节子场，根据不同灰阶模式的情况，调节不同分区对应的调节子场中亮子场或暗子场的大小，使得各分区显示的亮度在一设定的亮度阈值范围内，从而实现所述mini LED背光模组显示亮度的均匀化。\n\n[0055]值得注意的是，在步骤S200中，将所述mini LED背光模组每一帧的周期划分为一调节子场和N个显示子场，所述调节子场用于调节所述mini LED背光模组显示的每一帧画面的亮暗，并且，在步骤S300中，将所述调节子场划分为亮子场和暗子场，具体在所述miniLED背光模组工作时，所述数据线10在所述亮子场的时间段内输出高电位，在所述暗子场的时间段内输出低电位，从而可以在不同灰阶模式的条件下，通过调节不同所述分区对应的所述调节子场中亮子场或暗子场的大小，实现所述mini LED背光模组显示亮度的均匀化，此外，在本申请中如无其它特殊说明，具体以1G1D架构、频率为240Hz，N＝6位(bit)的miniLED背光模组为例，本实施例中，将所述mini LED背光模组沿第一方向100依次划分为4个分区，也即M＝4，将所述mini LED背光模组每一帧的周期划分为一调节子场和6个显示子场。而驱动所述mini LED背光模组在不同灰阶模式下发光中，具体所述灰阶模式的数量为26个。\n\n[0056]在一实施例中，如图2至图3所示，在所述步骤S200中，根据所述第1分区的亮度值和第M分区的亮度值，调整所述调节子场的大小，以获取使所述第1分区与第M分区的亮度差值在第一亮度阈值范围内时对应的所述调节子场的所述调节时间T调，包括：\n\n[0057]当所述第1分区与所述第M分区的亮度差值在所述第一亮度阈值范围外且所述第1分区的亮度值大于所述第M分区的亮度值时，增加所述调节子场的调节时间；或者当所述第1分区与所述第M分区的亮度差值在所述第一亮度阈值范围外且所述第1分区的亮度值小于所述第M分区的亮度值时，减少所述调节子场的调节时间；驱动所述mini LED背光模组发光，其中，在增加或减少后的所述调节子场的调节时间内，所述数据线10对所述mini LED背光模组位于所述第1分区内的部分输出低电位，所述数据线10对所述mini LED背光模组位于所述第M分区内的部分输出高电位；或\n\n[0058]当所述第1分区与第M分区的亮度差值在第一亮度阈值范围内时，则获取该次驱动所述mini LED背光模组的过程中对应的所述调节子场的调节时间T调。\n\n[0059]可以理解的是，在本实施例中，M＝4，所述第1分区的亮度值和第M分区的亮度值，也即是所述第1分区的亮度值和所述第4分区的亮度值，具体的，在调节所述调节子场的大小时，在驱动所述mini LED背光模组发光时，通过在所述调节子场的调节时间内，使所述数据线10对所述mini LED背光模组位于所述第1分区内的部分输出低电位，并且使所述数据线10对所述mini LED背光模组位于所述第M分区内的部分输出高电位，最大化的减小所述第1分区与所述第M分区的差异化，再对所述调节子场的大小进行调整，更加便于使所述第1分区与第M分区的亮度差值在第一亮度阈值范围内，从而方便更快的获取所述第1分区与第M分区的亮度差值在第一亮度阈值范围内时对应的所述调节子场的调节时间T调。\n\n[0060]值得注意的是，在调整所述调节子场的调节时间后，然后以调整过后的所述调节子场的调节时间重新驱动所述mini LED背光模组发光，其中，在增加或减少后的所述调节子场的调节时间内，所述数据线10对所述mini LED背光模组位于所述第1分区内的部分输出低电位，所述数据线10对所述mini LED背光模组位于所述第M分区内的部分输出高电位；直至所述第1分区与第M分区的亮度差值在第一亮度阈值范围内。\n\n[0061]在一实施例中，在所述步骤S200中，每一次驱动所述mini LED背光模组发光之前均包括：计算各所述显示子场的时间：\n\n[0062]T1＝(1/f－T调)/(2N－1)\n\n[0063]Tn＝2n-1T1\n\n[0064]其中，T1为第一显示子场的时间，Tn为第n显示子场的时间，2≤n≤N，f为所述miniLED背光模组的显示频率。\n\n[0065]可以理解的是，在本实施例中，f＝240Hz，N＝6,各所述显示子场之间的关系为：T6＝2T5＝4T4＝8T3＝16T2＝32T1；在所述步骤S200中，每一次驱动所述mini LED背光模组发光，都需要结合各所述显示子场的时间。\n\n[0066]在一实施例中，所述当所述第1分区与所述第M分区的亮度差值在所述第一亮度阈值范围外且所述第1分区的亮度值大于所述第M分区的亮度值时，增加所述调节子场的调节时间中，每一次增加的时间为T调增；\n\n[0067]所述当所述第1分区与所述第M分区的亮度差值在所述第一亮度阈值范围外且所述第1分区的亮度值小于所述第M分区的亮度值时，减少所述调节子场的调节时间中，每一次减少的时间为T调减；\n\n[0068]其中，T调增＝T调减。\n\n[0069]可以理解的是，在具体调整所述调节子场的调节时间时，T调增与T调减可以相等，也可以不相等，本实施例中，T调增与T调减设置相等，便于统一对所述调节子场调整的精度，避免T调增与T调减之间的差异过大，在具体使用时，可根据具体情况，对所述T调增和T调减进行具体设置。\n\n[0070]在一实施例中，在所述步骤S300中，将每一所述分区对应的所述调节子场划分为亮子场和暗子场中：\n\n[0071]所述第1分区所对应的所述亮子场的时间为0，所述第M分区所对应的所述亮子场的时间与所述调节子场的时间相等。\n\n[0072]可以理解的是，任一分区所对应的所述调节子场的时间等于所述亮子场的时间与所述暗子场的时间之和，将所述第1分区所对应的所述亮子场的时间设置为0，也即所述第1分区所对应的所述调节子场全部划分为所述暗子场，而所述第M分区所对应的所述亮子场的时间与所述调节子场的时间相等，也即所述第M分区所对应的所述暗子场的时间为0，所述第M分区所对应的所述调节子场全部划分为所述亮子场。\n\n[0073]在一实施例中，任意两所述分区中，其中一靠近所述控制单元的所述分区所对应的所述亮子场的时间小于另一远离所述控制单元的所述分区所对应的所述亮子场的时间。可以理解的是，越靠近所述控制单元，所述分区中的mini LED与所述控制单元之间连接的数据线10越短，对应所受到的RC Loading的影响越小，因此，无论是初次将所述调节子场划分为亮子场和暗子场，还是最后计算得到各所述分区所对应的亮子场时，连接所述数据线10的长度越短的所述分区，对应划分的所述亮子场的时间越小。\n\n[0074]在一实施例中，如图3所示，在所述步骤S300中，在每一所述灰阶模式下，根据各所述分区的亮度值，分别调整各所述分区对应的所述亮子场或所述暗子场的大小，以获取在该灰阶模式下各所述分区与所述第1分区的亮度差值在第二亮度阈值范围内时所对应的所述亮子场的时间和所述暗子场的时间，包括：\n\n[0075]驱动所述mini LED背光模组在第L灰阶模式下发光，其中，所述第L灰阶模式所对应的灰阶值为L，0≤L≤2N－1，所述mini LED背光模组的所述灰阶模式的数量为2N个；\n\n[0076]在第L灰阶模式下，根据各所述分区的亮度值，分别调整各所述分区对应的所述亮子场或所述暗子场的大小，以获取在第L灰阶模式下各所述分区与所述第1分区的亮度差值在第二亮度阈值范围内时所对应的所述亮子场的时间和所述暗子场的时间。\n\n[0077]可以理解的是，本实施例中，所述mini LED背光模组的所述灰阶模式的数量为26个，并且，所述第L灰阶模式所对应的灰阶值为L，0≤L≤2N－1，具体灰阶值L包括0、1…26－2、26－1；显然，需要在每一所述灰阶模式下，获取各所述分区与所述第1分区的亮度差值在第二亮度阈值范围内时所对应的所述亮子场的时间和所述暗子场的时间，其中，当所述灰阶值为L＝0时，此时，所述mini LED背光模组呈全黑模式，因此不用计算各所述分区对应的所述亮子场的时间和所述暗子场的时间。\n\n[0078]在一实施例中，如图3所示，在所述步骤S300中，驱动所述mini LED背光模组在不同灰阶模式下发光，包括：\n\n[0079]设置灰阶值L的初始值为1和调节步距灰阶S；\n\n[0080]在相邻两次以不同灰阶模式驱动所述mini LED背光模组发光的过程中，后一次采用的所述灰阶模式中的灰阶值减去前一次采用的所述灰阶模式中的灰阶值为所述调节步距灰阶S。\n\n[0081]可以理解的是，将所述灰阶值L的初始值设为1，每获取一个所述灰阶模式下各所述分区所对应的所述亮子场的时间和所述暗子场的时间，则进入下一所述灰阶模式，其中，在相邻两次以不同灰阶模式驱动所述mini LED背光模组发光的过程中，后一次采用的所述灰阶模式中的灰阶值减去前一次采用的所述灰阶模式中的灰阶值为所述调节步距灰阶S；值得注意的是，还包括一灰阶判定步骤，当本次的所述灰阶模式的灰阶值L为最大值时，本实施例中，也即是所述灰阶值L＝26－1时，则执行步骤S400。\n\n[0082]在一实施例中，所述在第L灰阶模式下，根据各所述分区的亮度值，分别调整各所述分区对应的所述亮子场或所述暗子场的大小，以获取在第L灰阶模式下各所述分区与所述第1分区的亮度差值在第二亮度阈值范围内时所对应的所述亮子场的时间和所述暗子场的时间，包括：\n\n[0083]在所述第L灰阶模式下，当所述第1分区与所述第m分区的亮度差值在所述第二亮度阈值范围外且所述第1分区的亮度值大于所述第m分区的亮度值时，则增加所述第m分区所对应的所述亮子场的时间或减少所述第m分区所对应的所述暗子场的时间；或者当所述第1分区与所述第m分区的亮度差值在所述第二亮度阈值范围外且所述第1分区的亮度值小于所述第m分区的亮度值时，则减少所述第m分区所对应的所述亮子场的时间或增加所述第m分区所对应的所述暗子场的时间；根据调整后的所述第m分区所对应的所述亮子场的时间和所述第m分区所对应的所述暗子场的时间，驱动所述mini LED背光模组在所述第L灰阶模式下发光；或\n\n[0084]在所述第L灰阶模式下，当所述第1分区与所述第m分区的亮度差值在所述第二亮度阈值范围内时，则获取该次驱动所述mini LED背光模组的过程中所述第m分区所对应的所述亮子场的时间T亮(m,L)和所述暗子场的时间T暗(m,L)，其中，m为分区号，2≤m≤M。\n\n[0085]可以理解的是，在每一次调整所述第m分区所对应的所述亮子场的时间或所述第m分区所对应的所述暗子场的时间后，在重新驱动所述mini LED背光模组的过程中，需要根据调整后的所述第m分区所对应的所述亮子场的时间和所述第m分区所对应的所述暗子场的时间，驱动所述mini LED背光模组在所述第L灰阶模式下发光；并且，在本实施例中，在同一所述灰阶模式下，设置分区号m的初始值为2；\n\n[0086]在相邻两次调整不同所述分区对应的所述亮子场或所述暗子场的大小的过程中，后一次调整的所述分区的分区号比前一次调整的所述分区的分区号大1。\n\n[0087]可以理解的是，将所述分区号m的初始值设置为2，每获取一次在第L灰阶模式下第m分区所对应的所述亮子场的时间和所述暗子场的时间之后，则进行获取下一所述分区所对应的所述亮子场的时间和所述暗子场的时间，具体的，在相邻两次调整不同所述分区对应的所述亮子场或所述暗子场的大小的过程中，后一次调整的所述分区的分区号比前一次调整的所述分区的分区号大1；值得注意的是，还包括一分区判定步骤，当本次的第m分区中的分区号m为最大值时，本实施例中，也即是当所述分区号m＝M＝4时，则在当前所述灰阶模式下，完成了获取各所述分区与所述第1分区的亮度差值在第二亮度阈值范围内时所对应的所述亮子场的时间和所述暗子场的时间。\n\n[0088]本申请通过将mini LED背光模组沿数据线10延伸的方向划分为多个分区，并在mini LED背光模组每一帧的周期中划分出调节子场，根据不同灰阶模式的情况，调节不同分区对应的调节子场中亮子场或暗子场的大小，使得各分区显示的亮度在一设定的亮度阈值范围内，从而实现所述mini LED背光模组显示亮度的均匀化。\n\n[0089]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0090]本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10854, 23908, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种主动发光的形式LED的触控显示面板及其制备方法。\n\n背景技术\n\n[0002]在现今的信息社会下，许多信息产品已由传统的键盘或鼠标等输入装置，转变为使用触控面板(touch sensing panel)作为输入装置，其中同时具有触控与显示功能的触控显示面板更是成为现今最流行的产品之一。\n\n[0003]随着当前Mini LED及Micro LED和大尺寸触控的快速发展，急需要具有主动发光的大尺寸触控显示。\n\n发明内容\n\n[0004]本发明一目的是提供一种触控显示面板，以主动发光的形式将Mini LED、MicroLED结合触控的新型触控显示面板。\n\n[0005]本发明提供一种触控显示面板，包括：基板，包括主显示区以及非显示区；多个第一电极，设于所述基板上且对应所述主显示区；多个第二电极，设于所述基板上且对应所述主显示区，所述第一电极与所述第二电极依次间隔设置；第一绝缘层，设于所述基板上且覆盖所述第一电极以及所述第二电极，所述第一绝缘层对应所述第一电极的上方设置有通孔，所述通孔延伸至所述第一电极的上表面；连接层，设于所述第一绝缘层上位于所述通孔中，所述连接层连接所述第一电极；LED，设于所述第一绝缘层上且对应所述第一电极以及所述第二电极；以及薄膜晶体管，设于所述基板的非显示区。\n\n[0006]进一步地，所述薄膜晶体管包括：栅极，设于所述基板上；第二绝缘层，设于所述基板上且覆盖所述栅极；有源层，设于所述第二绝缘层上；源漏电极层，设于所述有源层以及所述第二绝缘层上。\n\n[0007]进一步地，所述LED包括MicroLED或Mini LED。\n\n[0008]进一步地，所述第一电极的材料包括铜或钼；和/或，所述第二电极的材料包括铜或钼；和/或，所述连接层的材料包括铜或钼；和/或，所述第一绝缘层包括SiNx及SiO2。\n\n[0009]进一步地，所述栅极、所述第一电极与所述第二电极同层设置；和/或，所述第二绝缘层与所述第一绝缘层同层设置；和/或，所述源漏电极层与所述连接层同层设置。\n\n[0010]进一步福，所述第一电极在所述显示区形成第一电极图案；所述第二电极在所述显示区形成第二电极图案；所述第一电极图案横向设置，所述第二电极图案横向设置，所述第一电极图案与所述第二电极图案互不连接。\n\n[0011]进一步地，所述源漏电极层包括源极以及漏级，所述源极以及所述漏级连接所述有源层。\n\n[0012]进一步地，所述薄膜晶体管包括低温多晶硅薄膜晶体管或氧化物薄膜晶体管。\n\n[0013]本发明还提供一种触控显示面板的制备方法，包括：提供一基板以及LED，所述基板包括主显示区以及非显示区；形成第一金属层于所述基板上，所述第一金属层包括述依次间隔设置的第一电极、第二电极以及栅极，所述第一电极以及所述第二电极设于所述主显示区，所述栅极设于所述非显示区；形成绝缘层于所述基板上，所述绝缘层包括第一绝缘层以及第二绝缘层，所述第一绝缘层设于所述显示区且覆盖所述第一电极以及所述第二电极，所述第二绝缘层设于所述非显示区且覆盖所述栅极；形成有源层于所述第二绝缘层上，并在所述第一绝缘层对应所述第一电极处开设通孔，所述通孔延伸至所述第一电极的上表面；形成第二金属层于所述绝缘层以及所述有源层上，所述第二金属层包括连接层以及源漏极层，所述连接层位于所述第一绝缘层上且设于所述通孔中，所述连接层将所述第一电极进行连接，所述源漏电极层设于所述有源层以及所述第二绝缘层上；对所述第一电极以及所述第二电极图形化形成第一电极图案以及第二电极图案；将所述LED打件及设于所述绝缘层上，所述LED对应所述第一电极以及所述第二电极。\n\n[0014]进一步地，在所述形成有源层于所述第二绝缘层上，并在所述第一绝缘层对应所述第一电极处开设通孔的步骤中，包括：沉积一层有源材料于所述绝缘层上；光刻所述有源材料图案化形成通孔图案以及所述有源层；在所述通孔图案的区域对所述第一绝缘层开设所述通孔，所述通孔延伸至所述第一电极的上表面。\n\n[0015]本发明的有益效果是：本发明一方面提供一种触控显示面板，通过主动发光的形式将Mini LED、Micro LED结合触控的新型触控显示面板。本发明将薄膜晶体管与触控电极在基板上进行排布，可以使MicroLED或Mini LED实现三色的显示。本发明还提供一种触控显示面板的制备方法，在制备的时候，显示区的触控电极结构与非显示区的薄膜晶体管结构一同制备，可以提高制备的效率。\n\n附图说明\n\n[0016]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0017]图1为本发明提供的触控显示面板的结构示意图。\n\n[0018]图2为本发明提供第一电极以及第二电极图案的平面图。\n\n[0019]图3为本发明提供的触控显示面板制备方法步骤S1的结构示意图。\n\n[0020]图4为本发明提供的触控显示面板制备方法步骤S201的结构示意图。\n\n[0021]图5为本发明提供的触控显示面板制备方法步骤S202的结构示意图。\n\n[0022]图6为本发明提供的触控显示面板制备方法步骤S203的结构示意图。\n\n[0023]图7为本发明提供的触控显示面板制备方法步骤S401的结构示意图。\n\n[0024]图8为本发明提供的触控显示面板制备方法步骤S402的结构示意图。\n\n[0025]图9为本发明提供的触控显示面板制备方法步骤S403的结构示意图。\n\n[0026]图10为本发明提供的触控显示面板制备方法步骤S403的结构示意图。\n\n[0027]图11为本发明提供的触控显示面板制备方法步骤S5的结构示意图。\n\n[0028]图12为本发明提供的触控显示面板制备方法步骤S7的结构示意图。\n\n[0029]触控显示面板100；\n\n[0030]基板10；第一电极1011；第二电极1012；\n\n[0031]第一绝缘层1021；连接层1031；LED106；\n\n[0032]保护层107；主显示区110；非显示区120；\n\n[0033]栅极1013；第二绝缘层1022；有源层105；\n\n[0034]源漏电极层1032；第一金属层101；第二金属层103；\n\n[0035]第一电极图案111；第二电极图案112；通孔104；\n\n[0036]第一连接线113；第二连接线114。\n\n具体实施方式\n\n[0037]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0038]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0039]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0040]下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0041]如图1所示，本发明提供一种触控显示面板100，包括：基板10、多个第一电极1011、多个第二电极1012、第一绝缘层1021、连接层1031、LED106、薄膜晶体管以及保护层107。\n\n[0042]所述基板10包括主显示区110以及非显示区120。\n\n[0043]所述第一电极1011设于所述基板10上且对应所述主显示区110，所述第一电极1011为接受电极(Rx)。\n\n[0044]所述第二电极1012设于所述基板10上且对应所述主显示区110，所述第一电极1011与所述第二电极1012依次间隔设置，所述第二电极1012为传输电极(Tx)。\n\n[0045]所述第一绝缘层1021设于所述基板10上且覆盖所述第一电极1011以及所述第二电极1012，所述第一绝缘层1021对应所述第一电极1011的上方开设通孔104，所述通孔104延伸至所述第一电极1011的上表面。\n\n[0046]所述连接层1031设于所述第一绝缘层1021上且设于所述通孔104中，所述连接层1031连接多个所述第一电极1011。\n\n[0047]所述LED106设于所述第一绝缘层1021上且对应所述第一电极1011以及所述第二电极1012。所述LED106包括MicroLED或Mini LED。\n\n[0048]所述薄膜晶体管设于所述基板10的非显示区120。\n\n[0049]所述薄膜晶体管包括：栅极1013、第二绝缘层1022、有源层105以及源漏电极层1032。\n\n[0050]所述栅极1013设于所述基板10上。所述栅极1013、所述第一电极1011与所述第二电极1012同层设置，具体设置在第一金属层101中。\n\n[0051]所述第二绝缘层1022设于所述基板10上且覆盖所述栅极1013。所述第二绝缘层1022与所述第一绝缘层1021同层设置，具体设置在绝缘层中。\n\n[0052]所述有源层105设于所述第二绝缘层1022上。\n\n[0053]所述源漏电极层1032设于所述有源层105以及所述第二绝缘层1022上。所述源漏电极层1032与所述连接层1031同层设置，具体设置在第二金属层103中。\n\n[0054]所述源漏电极层1032包括源极以及漏级，所述源极以及所述漏级连接所述有源层105。\n\n[0055]所述保护层107设于基板10上，覆盖主显示区110以及非显示区120的器件，所述保护层107也可为封装层。\n\n[0056]在一实施例中，所述第一电极1011的材料包括铜或钼；和/或，所述第二电极1012的材料包括铜或钼；和/或，所述连接层1031的材料包括铜或钼；和/或，所述绝缘层的材料包括SiNx及SiO2。\n\n[0057]如图2所示，在一实施例中，所述第一电极1011在所述显示区形成第一电极图案111；所述第二电极1012在所述显示区形成第二电极图案112；所述第一电极图案111横向设置，所述第二电极图案112横向设置，所述第一电极图案111与所述第二电极图案112互不连接。\n\n[0058]相邻的第一电极图案111通过第一连接线113(图1中连接层1031)进行连接，需要进行跨膜层进行布线；相邻的第二电极图案112通过第二连接线114进行连接，相邻的第二电极图案112的与第二连接线114一同在第一金属层101图案化。第一电极图案111以及第二电极图案112可以实现触控显示面板100的LED106的三色的显示。\n\n[0059]本发明提供一种触控显示面板100，通过主动发光的形式将Mini LED、Micro LED结合触控的新型触控显示面板100。本发明将薄膜晶体管与触控电极在基板10上进行排布，可以使MicroLED或Mini LED实现三色的显示。\n\n[0060]本发明还提供一种触控显示面板的制备方法，用以制备得到所述触控显示面板100，所述触控显示面板的制备方法具体包括如下步骤。\n\n[0061]S1、如图3所示，提供一基板10以及LED106，所述基板10包括主显示区110以及非显示区120，所述LED106包括MicroLED或Mini LED。\n\n[0062]S2、形成第一金属层101于所述基板10上，所述第一金属层101包括述依次间隔设置的第一电极1011、第二电极1012以及栅极1013，所述第一电极1011以及所述第二电极1012设于所述主显示区110，所述栅极1013设于所述非显示区120。\n\n[0063]具体地，步骤S2包括如下步骤S201～S203。\n\n[0064]S201、如图4所示，沉积一金属材料于所述基板10上形成第一金属层101。\n\n[0065]S202、如图5所示，涂覆光刻胶于所述第一金属层101上，采用掩膜板对光刻胶曝光显影形成电极图案201(包括主显示区110的第一电极和第二电极图案112，以及非显示区120的栅极图案)。\n\n[0066]S203、如图6所示，根据所述电极图案，光刻所述第一金属层101图案化形成所述第一电极1011、所述第二电极1012以及所述栅极1013。\n\n[0067]S3、如图7所示，形成绝缘层于所述基板10上，所述绝缘层包括第一绝缘层1021以及所述第二绝缘层1022，所述第一绝缘层1021设于所述显示区且覆盖所述第一电极1011以及所述第二电极1012，所述第二绝缘层1022设于所述非显示区120且覆盖所述栅极1013。\n\n[0068]具体地，通过化学气相沉积一SiNx、SiO2等绝缘材料于所述基板10上。\n\n[0069]S4、形成有源层105于所述第二绝缘层1022上，并在所述第一绝缘层1021对应所述第一电极1011处开设通孔104，所述通孔104延伸至所述第一电极1011的上表面。\n\n[0070]所述形成有源层105于所述第二绝缘层1022上，并在所述第一绝缘层1021对应所述第一电极1011处开设通孔104的步骤中，具体包括如下步骤S401～S403。\n\n[0071]S401、如图7所示，沉积一层有源材料于所述绝缘层上，沉积的方法采用化学气相沉积的方法。\n\n[0072]S402、如图8所示，在有源金属材料表面涂覆一层光刻胶202，然后通过掩膜板曝光显影形成光刻胶图案(203及204)，所述光刻胶图案包括显示区的通孔图案203以及非显示区120的有源层图案204。\n\n[0073]S403、如图9以及图10所示，根据所述光刻胶图案光刻有源金属材料图案化形成有源层105，并在所述第一绝缘层1021与所述第二绝缘层1022之间刻蚀形成一间隙。\n\n[0074]在所述通孔图案区域对所述第一绝缘层1021开设通孔104，所述通孔104延伸至所述第一电极1011的上表面。\n\n[0075]S5、如图11所示，形成第二金属层103与所述绝缘层以及所述有源层105上，所述第二金属层103包括连接层1031以及源漏极层，所述连接层1031设于所述第一绝缘层1021上且位于所述通孔104中，所述连接层1031将所述第一电极1011进行连接，所述源漏电极层1032设于所述有源层105以及所述第二绝缘层1022上。\n\n[0076]具体地，步骤S5具体包括如下步骤S501～S502。\n\n[0077]S501、沉积一金属材料于所述基板10上形成第二金属层103。\n\n[0078]S502、光刻所述第二金属层103化形成所述连接层1031以及源漏极层。\n\n[0079]S6、对所述第一电极1011以及所述第二电极1012图形化形成第一电极图案111以及第二电极图案112。\n\n[0080]所述第一电极图案111横向设置，所述第二电极图案112横向设置，所述第一电极图案111与所述第二电极图案112互不连接。\n\n[0081]S7、如图12所示，将所述LED106打件及设于所述绝缘层上，所述LED106对应所述第一电极1011以及所述第二电极1012。\n\n[0082]本发明提供一种触控显示面板的制备方法，通过将触控电极、Mini LED、MicroLED以及薄膜晶体管结合形成主动发光的形式的触控显示面板100。\n\n[0083]在制备的时候，显示区的触控电极结构与非显示区120的薄膜晶体管结构一同制备，可以提高制备的效率。\n\n[0084]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0085]以上对本发明进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种主动发光的形式LED的触控显示面板及其制备方法。\n\n背景技术\n\n[0002]在现今的信息社会下，许多信息产品已由传统的键盘或鼠标等输入装置，转变为使用触控面板(touch sensing panel)作为输入装置，其中同时具有触控与显示功能的触控显示面板更是成为现今最流行的产品之一。\n\n[0003]随着当前Mini LED及Micro LED和大尺寸触控的快速发展，急需要具有主动发光的大尺寸触控显示。\n\n发明内容\n\n[0004]本发明一目的是提供一种触控显示面板，以主动发光的形式将Mini LED、MicroLED结合触控的新型触控显示面板。\n\n[0005]本发明提供一种触控显示面板，包括：基板，包括主显示区以及非显示区；多个第一电极，设于所述基板上且对应所述主显示区；多个第二电极，设于所述基板上且对应所述主显示区，所述第一电极与所述第二电极依次间隔设置；第一绝缘层，设于所述基板上且覆盖所述第一电极以及所述第二电极，所述第一绝缘层对应所述第一电极的上方设置有通孔，所述通孔延伸至所述第一电极的上表面；连接层，设于所述第一绝缘层上位于所述通孔中，所述连接层连接所述第一电极；LED，设于所述第一绝缘层上且对应所述第一电极以及所述第二电极；以及薄膜晶体管，设于所述基板的非显示区。\n\n[0006]进一步地，所述薄膜晶体管包括：栅极，设于所述基板上；第二绝缘层，设于所述基板上且覆盖所述栅极；有源层，设于所述第二绝缘层上；源漏电极层，设于所述有源层以及所述第二绝缘层上。\n\n[0007]进一步地，所述LED包括MicroLED或Mini LED。\n\n[0008]进一步地，所述第一电极的材料包括铜或钼；和/或，所述第二电极的材料包括铜或钼；和/或，所述连接层的材料包括铜或钼；和/或，所述第一绝缘层包括SiNx及SiO2。\n\n[0009]进一步地，所述栅极、所述第一电极与所述第二电极同层设置；和/或，所述第二绝缘层与所述第一绝缘层同层设置；和/或，所述源漏电极层与所述连接层同层设置。\n\n[0010]进一步福，所述第一电极在所述显示区形成第一电极图案；所述第二电极在所述显示区形成第二电极图案；所述第一电极图案横向设置，所述第二电极图案横向设置，所述第一电极图案与所述第二电极图案互不连接。\n\n[0011]进一步地，所述源漏电极层包括源极以及漏级，所述源极以及所述漏级连接所述有源层。\n\n[0012]进一步地，所述薄膜晶体管包括低温多晶硅薄膜晶体管或氧化物薄膜晶体管。\n\n[0013]本发明还提供一种触控显示面板的制备方法，包括：提供一基板以及LED，所述基板包括主显示区以及非显示区；形成第一金属层于所述基板上，所述第一金属层包括述依次间隔设置的第一电极、第二电极以及栅极，所述第一电极以及所述第二电极设于所述主显示区，所述栅极设于所述非显示区；形成绝缘层于所述基板上，所述绝缘层包括第一绝缘层以及第二绝缘层，所述第一绝缘层设于所述显示区且覆盖所述第一电极以及所述第二电极，所述第二绝缘层设于所述非显示区且覆盖所述栅极；形成有源层于所述第二绝缘层上，并在所述第一绝缘层对应所述第一电极处开设通孔，所述通孔延伸至所述第一电极的上表面；形成第二金属层于所述绝缘层以及所述有源层上，所述第二金属层包括连接层以及源漏极层，所述连接层位于所述第一绝缘层上且设于所述通孔中，所述连接层将所述第一电极进行连接，所述源漏电极层设于所述有源层以及所述第二绝缘层上；对所述第一电极以及所述第二电极图形化形成第一电极图案以及第二电极图案；将所述LED打件及设于所述绝缘层上，所述LED对应所述第一电极以及所述第二电极。\n\n[0014]进一步地，在所述形成有源层于所述第二绝缘层上，并在所述第一绝缘层对应所述第一电极处开设通孔的步骤中，包括：沉积一层有源材料于所述绝缘层上；光刻所述有源材料图案化形成通孔图案以及所述有源层；在所述通孔图案的区域对所述第一绝缘层开设所述通孔，所述通孔延伸至所述第一电极的上表面。\n\n[0015]本发明的有益效果是：本发明一方面提供一种触控显示面板，通过主动发光的形式将Mini LED、Micro LED结合触控的新型触控显示面板。本发明将薄膜晶体管与触控电极在基板上进行排布，可以使MicroLED或Mini LED实现三色的显示。本发明还提供一种触控显示面板的制备方法，在制备的时候，显示区的触控电极结构与非显示区的薄膜晶体管结构一同制备，可以提高制备的效率。\n\n附图说明\n\n[0016]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0017]图1为本发明提供的触控显示面板的结构示意图。\n\n[0018]图2为本发明提供第一电极以及第二电极图案的平面图。\n\n[0019]图3为本发明提供的触控显示面板制备方法步骤S1的结构示意图。\n\n[0020]图4为本发明提供的触控显示面板制备方法步骤S201的结构示意图。\n\n[0021]图5为本发明提供的触控显示面板制备方法步骤S202的结构示意图。\n\n[0022]图6为本发明提供的触控显示面板制备方法步骤S203的结构示意图。\n\n[0023]图7为本发明提供的触控显示面板制备方法步骤S401的结构示意图。\n\n[0024]图8为本发明提供的触控显示面板制备方法步骤S402的结构示意图。\n\n[0025]图9为本发明提供的触控显示面板制备方法步骤S403的结构示意图。\n\n[0026]图10为本发明提供的触控显示面板制备方法步骤S403的结构示意图。\n\n[0027]图11为本发明提供的触控显示面板制备方法步骤S5的结构示意图。\n\n[0028]图12为本发明提供的触控显示面板制备方法步骤S7的结构示意图。\n\n[0029]触控显示面板100；\n\n[0030]基板10；第一电极1011；第二电极1012；\n\n[0031]第一绝缘层1021；连接层1031；LED106；\n\n[0032]保护层107；主显示区110；非显示区120；\n\n[0033]栅极1013；第二绝缘层1022；有源层105；\n\n[0034]源漏电极层1032；第一金属层101；第二金属层103；\n\n[0035]第一电极图案111；第二电极图案112；通孔104；\n\n[0036]第一连接线113；第二连接线114。\n\n具体实施方式\n\n[0037]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0038]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0039]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0040]下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0041]如图1所示，本发明提供一种触控显示面板100，包括：基板10、多个第一电极1011、多个第二电极1012、第一绝缘层1021、连接层1031、LED106、薄膜晶体管以及保护层107。\n\n[0042]所述基板10包括主显示区110以及非显示区120。\n\n[0043]所述第一电极1011设于所述基板10上且对应所述主显示区110，所述第一电极1011为接受电极(Rx)。\n\n[0044]所述第二电极1012设于所述基板10上且对应所述主显示区110，所述第一电极1011与所述第二电极1012依次间隔设置，所述第二电极1012为传输电极(Tx)。\n\n[0045]所述第一绝缘层1021设于所述基板10上且覆盖所述第一电极1011以及所述第二电极1012，所述第一绝缘层1021对应所述第一电极1011的上方开设通孔104，所述通孔104延伸至所述第一电极1011的上表面。\n\n[0046]所述连接层1031设于所述第一绝缘层1021上且设于所述通孔104中，所述连接层1031连接多个所述第一电极1011。\n\n[0047]所述LED106设于所述第一绝缘层1021上且对应所述第一电极1011以及所述第二电极1012。所述LED106包括MicroLED或Mini LED。\n\n[0048]所述薄膜晶体管设于所述基板10的非显示区120。\n\n[0049]所述薄膜晶体管包括：栅极1013、第二绝缘层1022、有源层105以及源漏电极层1032。\n\n[0050]所述栅极1013设于所述基板10上。所述栅极1013、所述第一电极1011与所述第二电极1012同层设置，具体设置在第一金属层101中。\n\n[0051]所述第二绝缘层1022设于所述基板10上且覆盖所述栅极1013。所述第二绝缘层1022与所述第一绝缘层1021同层设置，具体设置在绝缘层中。\n\n[0052]所述有源层105设于所述第二绝缘层1022上。\n\n[0053]所述源漏电极层1032设于所述有源层105以及所述第二绝缘层1022上。所述源漏电极层1032与所述连接层1031同层设置，具体设置在第二金属层103中。\n\n[0054]所述源漏电极层1032包括源极以及漏级，所述源极以及所述漏级连接所述有源层105。\n\n[0055]所述保护层107设于基板10上，覆盖主显示区110以及非显示区120的器件，所述保护层107也可为封装层。\n\n[0056]在一实施例中，所述第一电极1011的材料包括铜或钼；和/或，所述第二电极1012的材料包括铜或钼；和/或，所述连接层1031的材料包括铜或钼；和/或，所述绝缘层的材料包括SiNx及SiO2。\n\n[0057]如图2所示，在一实施例中，所述第一电极1011在所述显示区形成第一电极图案111；所述第二电极1012在所述显示区形成第二电极图案112；所述第一电极图案111横向设置，所述第二电极图案112横向设置，所述第一电极图案111与所述第二电极图案112互不连接。\n\n[0058]相邻的第一电极图案111通过第一连接线113(图1中连接层1031)进行连接，需要进行跨膜层进行布线；相邻的第二电极图案112通过第二连接线114进行连接，相邻的第二电极图案112的与第二连接线114一同在第一金属层101图案化。第一电极图案111以及第二电极图案112可以实现触控显示面板100的LED106的三色的显示。\n\n[0059]本发明提供一种触控显示面板100，通过主动发光的形式将Mini LED、Micro LED结合触控的新型触控显示面板100。本发明将薄膜晶体管与触控电极在基板10上进行排布，可以使MicroLED或Mini LED实现三色的显示。\n\n[0060]本发明还提供一种触控显示面板的制备方法，用以制备得到所述触控显示面板100，所述触控显示面板的制备方法具体包括如下步骤。\n\n[0061]S1、如图3所示，提供一基板10以及LED106，所述基板10包括主显示区110以及非显示区120，所述LED106包括MicroLED或Mini LED。\n\n[0062]S2、形成第一金属层101于所述基板10上，所述第一金属层101包括述依次间隔设置的第一电极1011、第二电极1012以及栅极1013，所述第一电极1011以及所述第二电极1012设于所述主显示区110，所述栅极1013设于所述非显示区120。\n\n[0063]具体地，步骤S2包括如下步骤S201～S203。\n\n[0064]S201、如图4所示，沉积一金属材料于所述基板10上形成第一金属层101。\n\n[0065]S202、如图5所示，涂覆光刻胶于所述第一金属层101上，采用掩膜板对光刻胶曝光显影形成电极图案201(包括主显示区110的第一电极和第二电极图案112，以及非显示区120的栅极图案)。\n\n[0066]S203、如图6所示，根据所述电极图案，光刻所述第一金属层101图案化形成所述第一电极1011、所述第二电极1012以及所述栅极1013。\n\n[0067]S3、如图7所示，形成绝缘层于所述基板10上，所述绝缘层包括第一绝缘层1021以及所述第二绝缘层1022，所述第一绝缘层1021设于所述显示区且覆盖所述第一电极1011以及所述第二电极1012，所述第二绝缘层1022设于所述非显示区120且覆盖所述栅极1013。\n\n[0068]具体地，通过化学气相沉积一SiNx、SiO2等绝缘材料于所述基板10上。\n\n[0069]S4、形成有源层105于所述第二绝缘层1022上，并在所述第一绝缘层1021对应所述第一电极1011处开设通孔104，所述通孔104延伸至所述第一电极1011的上表面。\n\n[0070]所述形成有源层105于所述第二绝缘层1022上，并在所述第一绝缘层1021对应所述第一电极1011处开设通孔104的步骤中，具体包括如下步骤S401～S403。\n\n[0071]S401、如图7所示，沉积一层有源材料于所述绝缘层上，沉积的方法采用化学气相沉积的方法。\n\n[0072]S402、如图8所示，在有源金属材料表面涂覆一层光刻胶202，然后通过掩膜板曝光显影形成光刻胶图案(203及204)，所述光刻胶图案包括显示区的通孔图案203以及非显示区120的有源层图案204。\n\n[0073]S403、如图9以及图10所示，根据所述光刻胶图案光刻有源金属材料图案化形成有源层105，并在所述第一绝缘层1021与所述第二绝缘层1022之间刻蚀形成一间隙。\n\n[0074]在所述通孔图案区域对所述第一绝缘层1021开设通孔104，所述通孔104延伸至所述第一电极1011的上表面。\n\n[0075]S5、如图11所示，形成第二金属层103与所述绝缘层以及所述有源层105上，所述第二金属层103包括连接层1031以及源漏极层，所述连接层1031设于所述第一绝缘层1021上且位于所述通孔104中，所述连接层1031将所述第一电极1011进行连接，所述源漏电极层1032设于所述有源层105以及所述第二绝缘层1022上。\n\n[0076]具体地，步骤S5具体包括如下步骤S501～S502。\n\n[0077]S501、沉积一金属材料于所述基板10上形成第二金属层103。\n\n[0078]S502、光刻所述第二金属层103化形成所述连接层1031以及源漏极层。\n\n[0079]S6、对所述第一电极1011以及所述第二电极1012图形化形成第一电极图案111以及第二电极图案112。\n\n[0080]所述第一电极图案111横向设置，所述第二电极图案112横向设置，所述第一电极图案111与所述第二电极图案112互不连接。\n\n[0081]S7、如图12所示，将所述LED106打件及设于所述绝缘层上，所述LED106对应所述第一电极1011以及所述第二电极1012。\n\n[0082]本发明提供一种触控显示面板的制备方法，通过将触控电极、Mini LED、MicroLED以及薄膜晶体管结合形成主动发光的形式的触控显示面板100。\n\n[0083]在制备的时候，显示区的触控电极结构与非显示区120的薄膜晶体管结构一同制备，可以提高制备的效率。\n\n[0084]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0085]以上对本发明进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10855, 23909, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种背光模组和显示装置。\n\n背景技术\n\n[0002]Mini-LED背光因其尺寸较小，可实现超薄及多分区驱动等特点，作为液晶显示面板的背光光源得到较多应用。现有大尺寸显示装置采用的Mini-LED背光模组通常采用多块背板拼接而成，但由于相邻背板间的拼接区域Mini-LED的间距大于面内Mini-LED的间距，会造成拼接区域整体亮度低于面内，影响显示效果。\n\n[0003]因此，现有的Mini LED背光模组存在拼接区域亮度较低的技术问题，需要改进。\n\n发明内容\n\n[0004]本申请实施例提供一种背光模组和显示装置，用以缓解现有的Mini LED背光模组中拼接区域亮度较低的技术问题。\n\n[0005]本申请提供一种背光模组，包括拼接的多个背板，所述背板中设置有阵列排布的多个发光器件，所述发光器件用于在电源高电位信号和电源低电位信号的控制下发光，其中，所述发光器件包括位于相邻背板拼接区域的第一发光器件、以及位于所述背板其他区域的第二发光器件，至少一个背板中，所述第一发光器件对应的第一电源高电位信号大于所述第二发光器件对应的第二电源高电位信号。\n\n[0006]在本申请的背光模组中，相邻的两个背板中，任一背板对应的第一电源高电位信号均大于第二电源高电位信号。\n\n[0007]在本申请的背光模组中，所述两个背板对应的第一电源高电位信号相等。\n\n[0008]在本申请的背光模组中，相邻的两个背板中，其中一个背板对应的第一电源高电位信号大于第二电源高电位信号，另一个背板的第一电源高电位信号等于第二电源高电位信号。\n\n[0009]在本申请的背光模组中，所述背板中，同一列发光器件连接同一条电源高电位信号线，所述电源高电位信号线向对应列发光器件输入相同的电源高电位信号。\n\n[0010]在本申请的背光模组中，所述背板中，各发光器件对应的电源低电位信号均相等。\n\n[0011]在本申请的背光模组中，所述多个背板分别与对应的驱动芯片连接，所述驱动芯片向所述发光器件输入所述第一电源高电位信号和所述第二电源高电位信号。\n\n[0012]在本申请的背光模组中，所述驱动芯片用于，根据所述拼接区域和所述其他区域的亮度差，从本地存储的电压补偿对照表中查询得到所述亮度差对应的电压补偿值，将所述电压补偿值与所述第二电源高电位信号叠加得到所述第一电源高电位信号。\n\n[0013]在本申请的背光模组中，所述驱动芯片用于，根据所述拼接区域和所述其他区域的亮度差，计算得到所述亮度差对应的电压补偿值，将所述电压补偿值与所述第二电源高电位信号叠加得到所述第一电源高电位信号。\n\n[0014]在本申请的背光模组中，所述背板还包括驱动所述发光器件发光的背光驱动电路，所述背光驱动电路包括：\n\n[0015]数据信号输入模块，用于在扫描信号的控制下输入数据信号；\n\n[0016]驱动模块，与所述数据信号输入模块连接，用于在所述数据信号和所述电源高电位信号的控制下，驱动所述发光器件发光；\n\n[0017]存储模块，与所述数据信号输入模块和所述驱动模块连接，用于存储所述数据信号。\n\n[0018]在本申请的背光模组中，所述发光器件包括串联的多个Mini LED灯。\n\n[0019]本申请还提供一种显示装置，包括液晶显示面板和背光模组，所述背光模组包括拼接的多个背板，所述背板中设置有阵列排布的多个发光器件，所述发光器件用于在电源高电位信号和电源低电位信号的控制下发光，其中，所述发光器件包括位于相邻背板拼接区域的第一发光器件、以及位于所述背板其他区域的第二发光器件，至少一个背板中，所述第一发光器件对应的第一电源高电位信号大于所述第二发光器件对应的第二电源高电位信号。\n\n[0020]在本申请的显示装置中，相邻的两个背板中，任一背板对应的第一电源高电位信号均大于第二电源高电位信号。\n\n[0021]在本申请的显示装置中，相邻的两个背板中，其中一个背板对应的第一电源高电位信号大于第二电源高电位信号，另一个背板的第一电源高电位信号等于第二电源高电位信号。\n\n[0022]在本申请的显示装置中，所述背板中，各发光器件对应的电源低电位信号均相等。\n\n[0023]有益效果：本申请提供一种背光模组和显示装置，背光模组包括拼接的多个背板，所述背板中设置有阵列排布的多个发光器件，所述发光器件用于在电源高电位信号和电源低电位信号的控制下发光，其中，所述发光器件包括位于相邻背板拼接区域的第一发光器件、以及位于所述背板其他区域的第二发光器件，至少一个背板中，所述第一发光器件对应的第一电源高电位信号大于所述第二发光器件对应的第二电源高电位信号。本申请通过将第一电源高电位信号设置为大于第二电源高电位信号，则在拼接区域电源高电位信号和电源低电位信号的差值更大，对应的第一发光器件的亮度大于第二发光器件亮度，从而使得拼接区域中间距较大的第一发光器件的整体亮度与其他区域中间距较小的第二发光器件的整体亮度相等，提升了对应显示装置的显示效果。\n\n附图说明\n\n[0024]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0025]图1为本申请实施例提供的背光模组中电源高电位信号的第一种输入方式示意图。\n\n[0026]图2为本申请实施例提供的背光模组中电源高电位信号的第二种输入方式示意图。\n\n[0027]图3为本申请实施例提供的背光模组中背光驱动电路的结构示意图。\n\n[0028]图4为本申请实施例提供的显示装置的结构示意图。\n\n具体实施方式\n\n[0029]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0030]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0031]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0032]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0033]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0034]本申请实施例提供一种背光模组和显示装置，用以缓解现有的Mini LED背光模组中拼接区域亮度较低的技术问题。\n\n[0035]本申请提供一种背光模组，包括拼接的多个背板，背板中设置有阵列排布的多个发光器件，发光器件用于在电源高电位信号和电源低电位信号的控制下发光，其中，发光器件包括位于相邻背板拼接区域的第一发光器件、以及位于背板其他区域的第二发光器件，至少一个背板中，第一发光器件对应的第一电源高电位信号大于第二发光器件对应的第二电源高电位信号。\n\n[0036]如图1所示，本申请的背光模组为中大尺寸的液晶显示面板提供背光，背光模组使用多个背板10进行拼接，背板10上设置有阵列排布的多个发光器件100，每个发光器件100又可以包括串联设置的多个Mini LED灯或Micro LED灯。每块背板10中的背光驱动电路对该背板10中的发光器件100进行单独驱动，单独控制发光，单独为液晶显示面板每个分区内的像素提供背光，相对于采用整面驱动的背光模组，分区驱动的背光模组亮度控制更加灵活，发光效果更好。\n\n[0037]位于相邻背板10拼接区域11内的发光器件100为第一发光器件110，位于其他区域12内的发光器件100为第二发光器件120。由于背光模组的采用多个背板10拼接而成，受制造工艺限制，相邻的两个背板10中位于拼接区域11内的两列第一发光器件110的间距a，大于位于其他区域12内任意相邻列第二发光器件120的间距b，因此，在第一发光器件110和第二发光器件120的发光亮度相同时，拼接区域11内不同列第一发光器件110混光后的整体亮度较低，而其他区域12内不同列第二发光器件120混光后的整体亮度较低，从而在拼接区域11内会出现拼缝暗影，后续给液晶显示面板提供背光时，会影响液晶显示面板的显示效果。\n\n[0038]如图3所示，背板10中包括阵列设置的多个发光器件100，每个发光器件100均有背光驱动电路进行驱动，背光驱动电路包括数据信号输入模块101、驱动模块102和存储模块103，数据信号输入模块101用于在扫描信号Scan的控制下输入数据信号Data；驱动模块102与数据信号输入模块101连接，用于在数据信号Data和电源高电位信号VDD的控制下，驱动发光器件100发光；存储模块103与数据信号输入模块101和驱动模块102连接，用于存储数据信号Data。\n\n[0039]具体地，数据信号输入模块101包括开关晶体管T2，驱动模块102包括驱动晶体管T1，存储模块103包括存储电容Cs，开关晶体管T2的栅极接入扫描信号Scan，开关晶体管T2的第一电极接入数据信号Data，开关晶体管T2的第二电极与驱动晶体管T1的栅极、以及存储电容Cs的第一极板连接，存储电容Cs的第二极板接地，驱动晶体管T1的第一电极接入电源高电位信号VDD，驱动晶体管T1的第二电极接入电源低电位信号VSS。\n\n[0040]发光器件100的工作阶段包括数据写入阶段t1和发光阶段t2，在数据写入阶段t1，扫描信号Scan为高电位，开关晶体管T2打开，将数据信号Data输入给驱动晶体管T1的栅极，且存储在存储电容Cs中，驱动晶体管T1打开，使发光器件100发光；在发光阶段t2，扫描信号Scan为低电位，开关晶体管T2关闭，存储电容Cs可以维持驱动晶体管T1的栅极电位，使得发光器件100继续发光。\n\n[0041]发光器件100的发光亮度与电源高电压信号VDD与电源低电位信号VSS的压差相关，两者压差越大，发光器件100的发光亮度越大。\n\n[0042]如图1所示，在本申请中，对拼接区域11内的第一发光器件110所对应的背光驱动电路输入第一电源高电位信号VDD1，对其他区域12内的第二发光器件120所对应的背光驱动电路输入第二电源高电位信号VDD2，且至少一个背板10对应的第一电源高电位信号VDD1大于第二电源高电位信号VDD2，则对于该背板10，在拼接区域11电源高电位信号VDD和电源低电位信号VSS的差值更大，对应的第一发光器件110的发光亮度大于第二发光器件120的发光亮度，从而使得拼接区域11中间距较大的第一发光器件110的整体亮度与其他区域12中间距较小的第二发光器件120的整体亮度相等，进而消除了拼缝暗影，提升了对应显示装置的显示效果。\n\n[0043]在一种实施例中，相邻的两个背板10中，任一背板10对应的第一电源高电位信号VDD1均大于第二电源高电位信号VDD2。此时，如图1所示，每个拼接区域11内的两列第一发光器件100的发光亮度都得到提升，因此拼接区域11内的整体亮度提升较多，改善拼缝暗影的效果较好。当两个背板10对应的第一电源高电位信号VDD1相等时，混光的效果较为均匀，亮度提升的效果更好。\n\n[0044]在一种实施例中，相邻的两个背板10中，其中一个背板10对应的第一电源高电位信号VDD1大于第二电源高电位信号VDD2，另一个背板的第一电源高电位信号VDD1等于第二电源高电位信号VDD2。如图2所示，以三个背板10进行拼接为例，中间的背板10对应的第一电源高电位信号VDD1大于第二电源高电位信号VDD2，左右两边的背板10在拼接区域11和其他区域12均输入第二电源高电位信号VDD2，相当于第一电源高电位信号VDD1等于第二电源高电位信号VDD2。此时，在每个拼接区域11内的两列第一发光器件110中，其中一列第一发光器件110的亮度不变，另一列第一发光器件110的亮度增大，因此也可以在一定程度上起到提升拼接区域11整体亮度的作用。在拼接区域11与其他区域12亮度差异较小的场景下，可以仅增大一列第一发光器件110对应的第一电源高电位信号VDD1来提升亮度，相对于图1所对应的实施例，本方法在起到提升亮度的同时，带来的能耗增加较少，成本较低。\n\n[0045]如图1和图2所示，多个背板10分别通过印刷电路板20与对应的驱动芯片30连接，每个背板10中，同一列发光器件100连接同一条电源高电位信号线，电源高电位信号线向对应列发光器件100输入相同的电源高电位信号VDD。因此，在增大拼接区域11内电源高电位信号VDD时，第一发光器件110的亮度改变总是以列为单位改变。\n\n[0046]此外，在背板10中，各发光器件100对应的电源低电位信号VSS均相等。因此仅需改变电源高电位信号VDD的数值，即可增大电源高电位信号VDD与电源低电位信号VSS的压差，进而增大对应发光器件100的亮度。\n\n[0047]在每个背板10中，每列发光器件100对应连接一条电源高电位信号线，各电源高电位信号线中对应的电源高电位信号VDD均有该背板10连接的驱动芯片30提供，即驱动芯片30向发光器件100输入第一电源高电位信号VDD1和第二电源高电位信号VDD2。在确定第一电源高电位信号VDD1的具体数值时，可以有两种方式。\n\n[0048]在一种实施例中，驱动芯片30用于，根据拼接区域11和其他区域12的亮度差，从本地存储的电压补偿对照表中查询得到亮度差对应的电压补偿值，将电压补偿值与第二电源高电位信号VDD2叠加得到第一电源高电位信号VDD1。电压补偿对照表预先存储在驱动芯片30中，表中包括多个亮度或亮度范围，对应每个亮度值或亮度范围值，均有一个对应的电压补偿值，在获取到拼接区域11和其他区域12的亮度差后，从电压补偿对照表中查找到该亮度差对应的电压补偿值，则将该电压补偿值与第二电源高电位信号VDD2的数值进行叠加，叠加后的数值输入给第一发光器件110，可以使第一发光器件110的发光亮度增加，且增加的发光亮度刚好可以补偿前述的亮度差。使用查表的方式得到电压补偿值，较为方便快捷。\n\n[0049]在一种实施例中，驱动芯片30用于，根据拼接区域11和其他区域12的亮度差，计算得到亮度差对应的电压补偿值，将电压补偿值与第二电源高电位信号VDD2叠加得到第一电源高电位信号VDD1。对应每个亮度值或亮度范围值，均有一个对应的电压补偿值，在获取到拼接区域11和其他区域12的亮度差后，驱动芯片30直接计算得到该亮度差对应的电压补偿值，则将该电压补偿值与第二电源高电位信号VDD2的数值进行叠加，叠加后的数值输入给第一发光器件110，可以使第一发光器件110的发光亮度增加，且增加的发光亮度刚好可以补偿前述的亮度差。使用计算的方式得到电压补偿值，较为准确。\n\n[0050]本申请通过上述方式，将第一电源高电位信号VDD1设置为大于第二电源高电位信号VDD2，则在拼接区域11电源高电位信号VDD和电源低电位信号VSS的差值更大，对应的第一发光器件110的亮度大于第二发光器件120的亮度，从而使得拼接区域11中间距较大的第一发光器件110的整体亮度与其他区域12中间距较小的第二发光器件120的整体亮度相等，提升了对应显示装置的显示效果。\n\n[0051]如图4所示，本申请还提供一种显示装置，包括液晶显示面板50和背光模组，该背光模组包括拼接的多个背板10、胶框301、扩散板302、反射片303和光学膜片304，背板10上设置有阵列排布的多个发光器件100。液晶显示面板50通过粘结层(图未示出)固定在背光模组的胶框301上，背光模组中设置在背板201上的发光器件110发出的光线21，经由扩散板302、反射片303和光学膜片304后，照射到液晶显示面板50上，光线21先通过液晶显示面板50的下偏光片变成偏振光，液晶显示面板50通过TFT的开关作用，给每个像素分别输入不同大小的数据信号电压，液晶分子在不同电压下旋转的状态不同，因此对偏振光的透过程度也不同，最后经由上偏光片出射的光线亮度也不同，以此来实现多灰阶的画面显示。\n\n[0052]在本申请的显示装置中，背光模组为上述任一实施例所述的背光模组。通过将第一电源高电位信号设置为大于第二电源高电位信号，则在拼接区域电源高电位信号和电源低电位信号的差值更大，对应的第一发光器件的亮度大于第二发光器件亮度，从而使得拼接区域中间距较大的第一发光器件的整体亮度与其他区域中间距较小的第二发光器件的整体亮度相等，提升了显示装置的显示效果。\n\n[0053]根据以上实施例可知：\n\n[0054]本申请提供一种背光模组和显示装置，背光模组包括拼接的多个背板，背板中设置有阵列排布的多个发光器件，发光器件用于在电源高电位信号和电源低电位信号的控制下发光，其中，发光器件包括位于相邻背板拼接区域的第一发光器件、以及位于背板其他区域的第二发光器件，至少一个背板中，第一发光器件对应的第一电源高电位信号大于第二发光器件对应的第二电源高电位信号。本申请通过将第一电源高电位信号设置为大于第二电源高电位信号，则在拼接区域电源高电位信号和电源低电位信号的差值更大，对应的第一发光器件的亮度大于第二发光器件亮度，从而使得拼接区域中间距较大的第一发光器件的整体亮度与其他区域中间距较小的第二发光器件的整体亮度相等，提升了对应显示装置的显示效果。\n\n[0055]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0056]以上对本申请实施例所提供的一种背光模组和显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种背光模组和显示装置。\n\n背景技术\n\n[0002]Mini-LED背光因其尺寸较小，可实现超薄及多分区驱动等特点，作为液晶显示面板的背光光源得到较多应用。现有大尺寸显示装置采用的Mini-LED背光模组通常采用多块背板拼接而成，但由于相邻背板间的拼接区域Mini-LED的间距大于面内Mini-LED的间距，会造成拼接区域整体亮度低于面内，影响显示效果。\n\n[0003]因此，现有的Mini LED背光模组存在拼接区域亮度较低的技术问题，需要改进。\n\n发明内容\n\n[0004]本申请实施例提供一种背光模组和显示装置，用以缓解现有的Mini LED背光模组中拼接区域亮度较低的技术问题。\n\n[0005]本申请提供一种背光模组，包括拼接的多个背板，所述背板中设置有阵列排布的多个发光器件，所述发光器件用于在电源高电位信号和电源低电位信号的控制下发光，其中，所述发光器件包括位于相邻背板拼接区域的第一发光器件、以及位于所述背板其他区域的第二发光器件，至少一个背板中，所述第一发光器件对应的第一电源高电位信号大于所述第二发光器件对应的第二电源高电位信号。\n\n[0006]在本申请的背光模组中，相邻的两个背板中，任一背板对应的第一电源高电位信号均大于第二电源高电位信号。\n\n[0007]在本申请的背光模组中，所述两个背板对应的第一电源高电位信号相等。\n\n[0008]在本申请的背光模组中，相邻的两个背板中，其中一个背板对应的第一电源高电位信号大于第二电源高电位信号，另一个背板的第一电源高电位信号等于第二电源高电位信号。\n\n[0009]在本申请的背光模组中，所述背板中，同一列发光器件连接同一条电源高电位信号线，所述电源高电位信号线向对应列发光器件输入相同的电源高电位信号。\n\n[0010]在本申请的背光模组中，所述背板中，各发光器件对应的电源低电位信号均相等。\n\n[0011]在本申请的背光模组中，所述多个背板分别与对应的驱动芯片连接，所述驱动芯片向所述发光器件输入所述第一电源高电位信号和所述第二电源高电位信号。\n\n[0012]在本申请的背光模组中，所述驱动芯片用于，根据所述拼接区域和所述其他区域的亮度差，从本地存储的电压补偿对照表中查询得到所述亮度差对应的电压补偿值，将所述电压补偿值与所述第二电源高电位信号叠加得到所述第一电源高电位信号。\n\n[0013]在本申请的背光模组中，所述驱动芯片用于，根据所述拼接区域和所述其他区域的亮度差，计算得到所述亮度差对应的电压补偿值，将所述电压补偿值与所述第二电源高电位信号叠加得到所述第一电源高电位信号。\n\n[0014]在本申请的背光模组中，所述背板还包括驱动所述发光器件发光的背光驱动电路，所述背光驱动电路包括：\n\n[0015]数据信号输入模块，用于在扫描信号的控制下输入数据信号；\n\n[0016]驱动模块，与所述数据信号输入模块连接，用于在所述数据信号和所述电源高电位信号的控制下，驱动所述发光器件发光；\n\n[0017]存储模块，与所述数据信号输入模块和所述驱动模块连接，用于存储所述数据信号。\n\n[0018]在本申请的背光模组中，所述发光器件包括串联的多个Mini LED灯。\n\n[0019]本申请还提供一种显示装置，包括液晶显示面板和背光模组，所述背光模组包括拼接的多个背板，所述背板中设置有阵列排布的多个发光器件，所述发光器件用于在电源高电位信号和电源低电位信号的控制下发光，其中，所述发光器件包括位于相邻背板拼接区域的第一发光器件、以及位于所述背板其他区域的第二发光器件，至少一个背板中，所述第一发光器件对应的第一电源高电位信号大于所述第二发光器件对应的第二电源高电位信号。\n\n[0020]在本申请的显示装置中，相邻的两个背板中，任一背板对应的第一电源高电位信号均大于第二电源高电位信号。\n\n[0021]在本申请的显示装置中，相邻的两个背板中，其中一个背板对应的第一电源高电位信号大于第二电源高电位信号，另一个背板的第一电源高电位信号等于第二电源高电位信号。\n\n[0022]在本申请的显示装置中，所述背板中，各发光器件对应的电源低电位信号均相等。\n\n[0023]有益效果：本申请提供一种背光模组和显示装置，背光模组包括拼接的多个背板，所述背板中设置有阵列排布的多个发光器件，所述发光器件用于在电源高电位信号和电源低电位信号的控制下发光，其中，所述发光器件包括位于相邻背板拼接区域的第一发光器件、以及位于所述背板其他区域的第二发光器件，至少一个背板中，所述第一发光器件对应的第一电源高电位信号大于所述第二发光器件对应的第二电源高电位信号。本申请通过将第一电源高电位信号设置为大于第二电源高电位信号，则在拼接区域电源高电位信号和电源低电位信号的差值更大，对应的第一发光器件的亮度大于第二发光器件亮度，从而使得拼接区域中间距较大的第一发光器件的整体亮度与其他区域中间距较小的第二发光器件的整体亮度相等，提升了对应显示装置的显示效果。\n\n附图说明\n\n[0024]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0025]图1为本申请实施例提供的背光模组中电源高电位信号的第一种输入方式示意图。\n\n[0026]图2为本申请实施例提供的背光模组中电源高电位信号的第二种输入方式示意图。\n\n[0027]图3为本申请实施例提供的背光模组中背光驱动电路的结构示意图。\n\n[0028]图4为本申请实施例提供的显示装置的结构示意图。\n\n具体实施方式\n\n[0029]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0030]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0031]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0032]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0033]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0034]本申请实施例提供一种背光模组和显示装置，用以缓解现有的Mini LED背光模组中拼接区域亮度较低的技术问题。\n\n[0035]本申请提供一种背光模组，包括拼接的多个背板，背板中设置有阵列排布的多个发光器件，发光器件用于在电源高电位信号和电源低电位信号的控制下发光，其中，发光器件包括位于相邻背板拼接区域的第一发光器件、以及位于背板其他区域的第二发光器件，至少一个背板中，第一发光器件对应的第一电源高电位信号大于第二发光器件对应的第二电源高电位信号。\n\n[0036]如图1所示，本申请的背光模组为中大尺寸的液晶显示面板提供背光，背光模组使用多个背板10进行拼接，背板10上设置有阵列排布的多个发光器件100，每个发光器件100又可以包括串联设置的多个Mini LED灯或Micro LED灯。每块背板10中的背光驱动电路对该背板10中的发光器件100进行单独驱动，单独控制发光，单独为液晶显示面板每个分区内的像素提供背光，相对于采用整面驱动的背光模组，分区驱动的背光模组亮度控制更加灵活，发光效果更好。\n\n[0037]位于相邻背板10拼接区域11内的发光器件100为第一发光器件110，位于其他区域12内的发光器件100为第二发光器件120。由于背光模组的采用多个背板10拼接而成，受制造工艺限制，相邻的两个背板10中位于拼接区域11内的两列第一发光器件110的间距a，大于位于其他区域12内任意相邻列第二发光器件120的间距b，因此，在第一发光器件110和第二发光器件120的发光亮度相同时，拼接区域11内不同列第一发光器件110混光后的整体亮度较低，而其他区域12内不同列第二发光器件120混光后的整体亮度较低，从而在拼接区域11内会出现拼缝暗影，后续给液晶显示面板提供背光时，会影响液晶显示面板的显示效果。\n\n[0038]如图3所示，背板10中包括阵列设置的多个发光器件100，每个发光器件100均有背光驱动电路进行驱动，背光驱动电路包括数据信号输入模块101、驱动模块102和存储模块103，数据信号输入模块101用于在扫描信号Scan的控制下输入数据信号Data；驱动模块102与数据信号输入模块101连接，用于在数据信号Data和电源高电位信号VDD的控制下，驱动发光器件100发光；存储模块103与数据信号输入模块101和驱动模块102连接，用于存储数据信号Data。\n\n[0039]具体地，数据信号输入模块101包括开关晶体管T2，驱动模块102包括驱动晶体管T1，存储模块103包括存储电容Cs，开关晶体管T2的栅极接入扫描信号Scan，开关晶体管T2的第一电极接入数据信号Data，开关晶体管T2的第二电极与驱动晶体管T1的栅极、以及存储电容Cs的第一极板连接，存储电容Cs的第二极板接地，驱动晶体管T1的第一电极接入电源高电位信号VDD，驱动晶体管T1的第二电极接入电源低电位信号VSS。\n\n[0040]发光器件100的工作阶段包括数据写入阶段t1和发光阶段t2，在数据写入阶段t1，扫描信号Scan为高电位，开关晶体管T2打开，将数据信号Data输入给驱动晶体管T1的栅极，且存储在存储电容Cs中，驱动晶体管T1打开，使发光器件100发光；在发光阶段t2，扫描信号Scan为低电位，开关晶体管T2关闭，存储电容Cs可以维持驱动晶体管T1的栅极电位，使得发光器件100继续发光。\n\n[0041]发光器件100的发光亮度与电源高电压信号VDD与电源低电位信号VSS的压差相关，两者压差越大，发光器件100的发光亮度越大。\n\n[0042]如图1所示，在本申请中，对拼接区域11内的第一发光器件110所对应的背光驱动电路输入第一电源高电位信号VDD1，对其他区域12内的第二发光器件120所对应的背光驱动电路输入第二电源高电位信号VDD2，且至少一个背板10对应的第一电源高电位信号VDD1大于第二电源高电位信号VDD2，则对于该背板10，在拼接区域11电源高电位信号VDD和电源低电位信号VSS的差值更大，对应的第一发光器件110的发光亮度大于第二发光器件120的发光亮度，从而使得拼接区域11中间距较大的第一发光器件110的整体亮度与其他区域12中间距较小的第二发光器件120的整体亮度相等，进而消除了拼缝暗影，提升了对应显示装置的显示效果。\n\n[0043]在一种实施例中，相邻的两个背板10中，任一背板10对应的第一电源高电位信号VDD1均大于第二电源高电位信号VDD2。此时，如图1所示，每个拼接区域11内的两列第一发光器件100的发光亮度都得到提升，因此拼接区域11内的整体亮度提升较多，改善拼缝暗影的效果较好。当两个背板10对应的第一电源高电位信号VDD1相等时，混光的效果较为均匀，亮度提升的效果更好。\n\n[0044]在一种实施例中，相邻的两个背板10中，其中一个背板10对应的第一电源高电位信号VDD1大于第二电源高电位信号VDD2，另一个背板的第一电源高电位信号VDD1等于第二电源高电位信号VDD2。如图2所示，以三个背板10进行拼接为例，中间的背板10对应的第一电源高电位信号VDD1大于第二电源高电位信号VDD2，左右两边的背板10在拼接区域11和其他区域12均输入第二电源高电位信号VDD2，相当于第一电源高电位信号VDD1等于第二电源高电位信号VDD2。此时，在每个拼接区域11内的两列第一发光器件110中，其中一列第一发光器件110的亮度不变，另一列第一发光器件110的亮度增大，因此也可以在一定程度上起到提升拼接区域11整体亮度的作用。在拼接区域11与其他区域12亮度差异较小的场景下，可以仅增大一列第一发光器件110对应的第一电源高电位信号VDD1来提升亮度，相对于图1所对应的实施例，本方法在起到提升亮度的同时，带来的能耗增加较少，成本较低。\n\n[0045]如图1和图2所示，多个背板10分别通过印刷电路板20与对应的驱动芯片30连接，每个背板10中，同一列发光器件100连接同一条电源高电位信号线，电源高电位信号线向对应列发光器件100输入相同的电源高电位信号VDD。因此，在增大拼接区域11内电源高电位信号VDD时，第一发光器件110的亮度改变总是以列为单位改变。\n\n[0046]此外，在背板10中，各发光器件100对应的电源低电位信号VSS均相等。因此仅需改变电源高电位信号VDD的数值，即可增大电源高电位信号VDD与电源低电位信号VSS的压差，进而增大对应发光器件100的亮度。\n\n[0047]在每个背板10中，每列发光器件100对应连接一条电源高电位信号线，各电源高电位信号线中对应的电源高电位信号VDD均有该背板10连接的驱动芯片30提供，即驱动芯片30向发光器件100输入第一电源高电位信号VDD1和第二电源高电位信号VDD2。在确定第一电源高电位信号VDD1的具体数值时，可以有两种方式。\n\n[0048]在一种实施例中，驱动芯片30用于，根据拼接区域11和其他区域12的亮度差，从本地存储的电压补偿对照表中查询得到亮度差对应的电压补偿值，将电压补偿值与第二电源高电位信号VDD2叠加得到第一电源高电位信号VDD1。电压补偿对照表预先存储在驱动芯片30中，表中包括多个亮度或亮度范围，对应每个亮度值或亮度范围值，均有一个对应的电压补偿值，在获取到拼接区域11和其他区域12的亮度差后，从电压补偿对照表中查找到该亮度差对应的电压补偿值，则将该电压补偿值与第二电源高电位信号VDD2的数值进行叠加，叠加后的数值输入给第一发光器件110，可以使第一发光器件110的发光亮度增加，且增加的发光亮度刚好可以补偿前述的亮度差。使用查表的方式得到电压补偿值，较为方便快捷。\n\n[0049]在一种实施例中，驱动芯片30用于，根据拼接区域11和其他区域12的亮度差，计算得到亮度差对应的电压补偿值，将电压补偿值与第二电源高电位信号VDD2叠加得到第一电源高电位信号VDD1。对应每个亮度值或亮度范围值，均有一个对应的电压补偿值，在获取到拼接区域11和其他区域12的亮度差后，驱动芯片30直接计算得到该亮度差对应的电压补偿值，则将该电压补偿值与第二电源高电位信号VDD2的数值进行叠加，叠加后的数值输入给第一发光器件110，可以使第一发光器件110的发光亮度增加，且增加的发光亮度刚好可以补偿前述的亮度差。使用计算的方式得到电压补偿值，较为准确。\n\n[0050]本申请通过上述方式，将第一电源高电位信号VDD1设置为大于第二电源高电位信号VDD2，则在拼接区域11电源高电位信号VDD和电源低电位信号VSS的差值更大，对应的第一发光器件110的亮度大于第二发光器件120的亮度，从而使得拼接区域11中间距较大的第一发光器件110的整体亮度与其他区域12中间距较小的第二发光器件120的整体亮度相等，提升了对应显示装置的显示效果。\n\n[0051]如图4所示，本申请还提供一种显示装置，包括液晶显示面板50和背光模组，该背光模组包括拼接的多个背板10、胶框301、扩散板302、反射片303和光学膜片304，背板10上设置有阵列排布的多个发光器件100。液晶显示面板50通过粘结层(图未示出)固定在背光模组的胶框301上，背光模组中设置在背板201上的发光器件110发出的光线21，经由扩散板302、反射片303和光学膜片304后，照射到液晶显示面板50上，光线21先通过液晶显示面板50的下偏光片变成偏振光，液晶显示面板50通过TFT的开关作用，给每个像素分别输入不同大小的数据信号电压，液晶分子在不同电压下旋转的状态不同，因此对偏振光的透过程度也不同，最后经由上偏光片出射的光线亮度也不同，以此来实现多灰阶的画面显示。\n\n[0052]在本申请的显示装置中，背光模组为上述任一实施例所述的背光模组。通过将第一电源高电位信号设置为大于第二电源高电位信号，则在拼接区域电源高电位信号和电源低电位信号的差值更大，对应的第一发光器件的亮度大于第二发光器件亮度，从而使得拼接区域中间距较大的第一发光器件的整体亮度与其他区域中间距较小的第二发光器件的整体亮度相等，提升了显示装置的显示效果。\n\n[0053]根据以上实施例可知：\n\n[0054]本申请提供一种背光模组和显示装置，背光模组包括拼接的多个背板，背板中设置有阵列排布的多个发光器件，发光器件用于在电源高电位信号和电源低电位信号的控制下发光，其中，发光器件包括位于相邻背板拼接区域的第一发光器件、以及位于背板其他区域的第二发光器件，至少一个背板中，第一发光器件对应的第一电源高电位信号大于第二发光器件对应的第二电源高电位信号。本申请通过将第一电源高电位信号设置为大于第二电源高电位信号，则在拼接区域电源高电位信号和电源低电位信号的差值更大，对应的第一发光器件的亮度大于第二发光器件亮度，从而使得拼接区域中间距较大的第一发光器件的整体亮度与其他区域中间距较小的第二发光器件的整体亮度相等，提升了对应显示装置的显示效果。\n\n[0055]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0056]以上对本申请实施例所提供的一种背光模组和显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10856, 23910, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种显示装置。\n\n背景技术\n\n[0002]Mini-LED或Micro-LED是新一代显示技术，比现有的OLED技术的亮度更高、发光效率更好、并且功耗更低。Micro-LED的红绿蓝像素不会出现寿命衰退的问题，而OLED不同像素的衰减速度是不一样的，因此Micro-LED在使用寿命上要比OLED使用寿命更长。\n\n[0003]纵使Mini-LED或Micro-LED在新一代显示领域拥有非常大的潜力，但是其本质依然是LED的自发光，因此LED技术的固有技术问题—散热问题依然是Mini-LED或Micro-LED显示技术所要面临的问题，并且在大尺寸显示中散热带来的问题更加的凸显出来，为了解决这一问题，开发更加优良的大尺寸Mini-LED或Micro-LED显示器散热方案成为亟待解决的一大难题。\n\n[0004]因此，现有技术存在缺陷，急需解决。\n\n发明内容\n\n[0005]本申请提供一种显示装置，能够解决传统Mini-LED或Micro-LED显示器散热不佳，影响显示器性能的问题。\n\n[0006]为解决上述问题，本申请提供的技术方案如下：\n\n[0007]本申请提供一种显示装置，包括显示模组和散热模组，所述显示模组位于所述散热模组的一侧或两侧；\n\n[0008]所述散热模组包括平行于所述显示模组设置的第一散热板和第二散热板，所述第一散热板和所述第二散热板组合后形成两端开口的空腔；\n\n[0009]所述散热模组的一侧侧面具有进风口，相对另一侧侧面具有出风口，所述空腔形成散热风道。\n\n[0010]在本申请的显示装置中，所述第一散热板面向所述第二散热板的一侧表面设置有交错分布的散热翅，所述散热翅将所述散热风道分隔成多个散热子风道。\n\n[0011]在本申请的显示装置中，所述散热翅倾斜于所述第一散热板表面设置，所述散热翅与所述第一散热板表面之间的夹角为10°-80°。\n\n[0012]在本申请的显示装置中，所述散热翅朝向所述出风口一侧倾斜。\n\n[0013]在本申请的显示装置中，所述散热翅的截面形状为圆形、三角形、矩形中的一种。\n\n[0014]在本申请的显示装置中，所述散热翅在垂直于所述第二散热板的方向上与所述第二散热板之间具有预设距离。\n\n[0015]在本申请的显示装置中，所述散热模组的材料为金属材料。\n\n[0016]在本申请的显示装置中，所述显示模组包括贴合于所述第一散热板上的第一显示模组以及贴合于所述第二散热板上的第二显示模组。\n\n[0017]在本申请的显示装置中，所述第一散热板和所述第二散热板为一体式结构。\n\n[0018]在本申请的显示装置中，所述显示模组通过导热胶与所述散热模组贴合。\n\n[0019]本申请的有益效果为：本申请提供的显示装置，通过在显示模组的一侧设置具有烟囱效应的散热模组，并且散热模组内部再配合交错分布的散热翅，能够大大提升散热性能，解决传统Mini-LED或Micro-LED显示器散热不佳，影响显示器性能的问题。\n\n附图说明\n\n[0020]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0021]图1为本申请实施例一提供的显示装置的结构示意图；\n\n[0022]图2为本申请实施例一提供的第一散热板的结构示意图；\n\n[0023]图3为本申请实施例二提供的显示装置的结构示意图。\n\n具体实施方式\n\n[0024]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0025]在本申请的描述中，需要理解的是，术语“纵向”、“横向”、“长度”、“宽度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。在本申请中，“/”表示“或者”的意思。\n\n[0026]本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。\n\n[0027]本申请针对传统Mini-LED或Micro-LED显示器散热不佳，影响显示器性能的技术问题，本实施例能够解决该缺陷。\n\n[0028]以下请结合具体实施例对本申请的显示装置进行详细描述。\n\n[0029]实施例一\n\n[0030]请参照图1所示，为本申请实施例一提供的显示装置的结构示意图。所述显示装置包括：显示模组1和散热模组2，所述显示模组1位于所述散热模组2的一侧；所述散热模组2用于对所述显示模组1进行散热。所述散热模组2包括平行于所述显示模组1设置的第一散热板21和第二散热板22，所述第一散热板21和所述第二散热板22组合后形成两端开口的空腔结构。所述散热模组2的一侧侧面具有进风口201，相对另一侧侧面具有出风口202，所述空腔形成散热风道。\n\n[0031]其中，所述显示模组1具有显示面与背面，所述显示面设置若干点阵排列的Mini-LED发光单元或Micro-LED发光单元，所述背面与所述散热模组2贴合。所述显示模组1工作时所产生的热量会通过所述显示模组1的背面传导至所述散热模组2上，再经由所述散热风道将热量排出。\n\n[0032]为了利于热传导进行散热，所述显示模组1与所述散热模组2之间通过导热胶粘合，所述导热胶为导热性能较好的胶材，具体材料不做限定。\n\n[0033]进一步的，所述导热胶中均匀的掺杂有金属粒子，由于金属具有良好的导热性能，因此可以进一步增强所述导热胶的热传导性能，使所述显示模组1一侧的热量快速的传导至所述散热模组2上。\n\n[0034]进一步的，为了增强所述散热模组2的散热性能，所述散热模组2的材料为金属材料，例如所述第一散热板21和所述第二散热板22可以采用铝合金板等。\n\n[0035]在一种实施例中，可以通过模压等方式一体化成型所述第一散热板21和所述第二散热板22，所述第一散热板21和所述第二散热板22为一体式结构可以简化制程。\n\n[0036]在一种实施例中，所述进风口201以及所述出风口202的的形状还可以设置为椭圆形、圆形、三角形和矩形的其中之一或者组合，所述进风口201以及所述出风口202的位置也可以根据所述显示模组1的实际散热需求而设置。\n\n[0037]如图1所示，在所述散热模组2的下部设置有进风口201，在所述散热模组2的上部设置有出风口202，所述散热模组2的内部中空设计形成散热风道，从而在所述散热模组2的内部形成一烟囱结构。由于所述显示模组1的大部分热量朝一个方向进行散发，即所述显示模组1的热量主要通过背面散发，从而使得所述显示模组1的大部分热量散发到所述散热模组2上以及所述散热模组2的内部，所述散热模组2内部温度高的空气，密度减小而上升，并从上部出风口202排出，这时会在低密度空气原来的地方形成负压区，于是所述散热模组2外部温度比较低而密度比重大的新鲜空气从所述散热模组2下部的进风口201被吸入所述散热风道。由此，在烟囱结构的作用下，热量易于被热空气以对流方法迅速带走。这样，达到了加快所述显示模组1散热的技术效果。\n\n[0038]为了进一步实现更好的散热效果，本实施例在所述第一散热板21面向所述第二散热板22的一侧表面设置有交错分布的散热翅23，所述散热翅23将所述散热风道分隔成多个散热子风道。\n\n[0039]如图2所示，为本申请实施例一提供的第一散热板的结构示意图。所述第一散热板21上的所述散热翅23可以与所述第一散热板的本体一体成型，或者所述散热翅23也可以单独安装在所述第一散热板21上。相邻两行和/或相邻两列的所述散热翅23交错分布，使自下而上运动的空气可以从相邻两所述散热翅23之间的间隙进入多个散热子风道中，然后在浮力的作用下继续向上运动。所述散热翅23可以起到分流作用，使得热空气在散热风道中分布均匀，从而延缓了热边界层的形成。所述散热翅23的设置增加了散热风道中流动空气的扰动，热空气在散热风道中流动状态由单向变为多向，使所述散热翅23之间的空气流速提高，进一步增强了所述散热模组的散热性能。\n\n[0040]进一步的，所述散热翅23倾斜于所述第一散热板21表面设置，所述散热翅23与所述第一散热板21表面之间的夹角为10°-80°。并且，所述散热翅23朝向所述出风口202一侧倾斜。\n\n[0041]由于所述散热翅23朝向所述出风口202一侧倾斜设计，因此可以减小空气在所述散热风道中流动的阻力，有助于散热风道中的空气与外界空气对流。\n\n[0042]进一步的，所述散热翅23的截面形状为圆形、三角形、矩形中的一种。\n\n[0043]进一步的，所述散热翅23在垂直于所述第二散热板22的方向上与所述第二散热板22之间具有预设距离。从而既能够实现所述散热翅23的分流作用及空气扰动作用，又由于空气在散热风道中流动的阻力进一步减小，因此有利于所述散热模组2的散热性能。\n\n[0044]在一种实施例中，所述散热翅23在所述第一散热板21上的分布密度由所述第一散热板21的中间区域向四周逐渐减小。如此，所述第一散热板21的中间区域的所述散热翅23可以很好的将热量向四周分流，有利于所述第一散热板21的中间区域的热量疏导，所述第一散热板21四周区域的所述散热翅23的密度相对较低，空气在散热风道中流动的阻力相对较小，可以快速的将散热风道中的热量带走。\n\n[0045]本申请的显示装置中散热模组的散热效率受外界环境输入热量和显示模组发热升温影响，当输入热量越大或升温越高，烟囱效应就越强，散热效果随之会更好。本申请通过在显示模组背后设计特殊的散热风道，无需专门从外界输入动力能源，利用气体受热膨胀密度减小自然向上流动的烟囱效应，再通过散热翅的设计强化空气对流实现散热，无需外部输入电能，节省能耗。\n\n[0046]实施例二\n\n[0047]如图3所示，为本申请实施例二提供的显示装置的结构示意图。本实施例与上述实施例一的显示装置的结构相同/相似，区别在于：本实施例的显示装置为双面屏显示装置，可以实现双面显示，即所述显示模组包括贴合于所述第一散热板21上的第一显示模组11以及贴合于所述第二散热板22上的第二显示模组12。\n\n[0048]所述第一显示模组11以及所述第二显示模组12的显示面设置若干点阵排列的Mini-LED发光单元或Micro-LED发光单元，当然，所述第一显示模组11以及所述第二显示模组12也可以为其他类型的显示模组，此处不做限制。\n\n[0049]本实施例由于在两个显示模组之间设置具有烟囱效应的散热模组，因此，可以有效解决显示模组散热不佳的问题，从而提升显示模组的显示效果及使用寿命。\n\n[0050]本申请的显示装置通过在显示模组的一侧设置具有烟囱效应的散热模组，并且散热模组内部再配合交错分布的散热翅，能够大大提升散热性能，解决传统Mini-LED或Micro-LED显示器散热不佳，影响显示器性能的问题。\n\n[0051]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种显示装置。\n\n背景技术\n\n[0002]Mini-LED或Micro-LED是新一代显示技术，比现有的OLED技术的亮度更高、发光效率更好、并且功耗更低。Micro-LED的红绿蓝像素不会出现寿命衰退的问题，而OLED不同像素的衰减速度是不一样的，因此Micro-LED在使用寿命上要比OLED使用寿命更长。\n\n[0003]纵使Mini-LED或Micro-LED在新一代显示领域拥有非常大的潜力，但是其本质依然是LED的自发光，因此LED技术的固有技术问题—散热问题依然是Mini-LED或Micro-LED显示技术所要面临的问题，并且在大尺寸显示中散热带来的问题更加的凸显出来，为了解决这一问题，开发更加优良的大尺寸Mini-LED或Micro-LED显示器散热方案成为亟待解决的一大难题。\n\n[0004]因此，现有技术存在缺陷，急需解决。\n\n发明内容\n\n[0005]本申请提供一种显示装置，能够解决传统Mini-LED或Micro-LED显示器散热不佳，影响显示器性能的问题。\n\n[0006]为解决上述问题，本申请提供的技术方案如下：\n\n[0007]本申请提供一种显示装置，包括显示模组和散热模组，所述显示模组位于所述散热模组的一侧或两侧；\n\n[0008]所述散热模组包括平行于所述显示模组设置的第一散热板和第二散热板，所述第一散热板和所述第二散热板组合后形成两端开口的空腔；\n\n[0009]所述散热模组的一侧侧面具有进风口，相对另一侧侧面具有出风口，所述空腔形成散热风道。\n\n[0010]在本申请的显示装置中，所述第一散热板面向所述第二散热板的一侧表面设置有交错分布的散热翅，所述散热翅将所述散热风道分隔成多个散热子风道。\n\n[0011]在本申请的显示装置中，所述散热翅倾斜于所述第一散热板表面设置，所述散热翅与所述第一散热板表面之间的夹角为10°-80°。\n\n[0012]在本申请的显示装置中，所述散热翅朝向所述出风口一侧倾斜。\n\n[0013]在本申请的显示装置中，所述散热翅的截面形状为圆形、三角形、矩形中的一种。\n\n[0014]在本申请的显示装置中，所述散热翅在垂直于所述第二散热板的方向上与所述第二散热板之间具有预设距离。\n\n[0015]在本申请的显示装置中，所述散热模组的材料为金属材料。\n\n[0016]在本申请的显示装置中，所述显示模组包括贴合于所述第一散热板上的第一显示模组以及贴合于所述第二散热板上的第二显示模组。\n\n[0017]在本申请的显示装置中，所述第一散热板和所述第二散热板为一体式结构。\n\n[0018]在本申请的显示装置中，所述显示模组通过导热胶与所述散热模组贴合。\n\n[0019]本申请的有益效果为：本申请提供的显示装置，通过在显示模组的一侧设置具有烟囱效应的散热模组，并且散热模组内部再配合交错分布的散热翅，能够大大提升散热性能，解决传统Mini-LED或Micro-LED显示器散热不佳，影响显示器性能的问题。\n\n附图说明\n\n[0020]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0021]图1为本申请实施例一提供的显示装置的结构示意图；\n\n[0022]图2为本申请实施例一提供的第一散热板的结构示意图；\n\n[0023]图3为本申请实施例二提供的显示装置的结构示意图。\n\n具体实施方式\n\n[0024]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0025]在本申请的描述中，需要理解的是，术语“纵向”、“横向”、“长度”、“宽度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。在本申请中，“/”表示“或者”的意思。\n\n[0026]本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。\n\n[0027]本申请针对传统Mini-LED或Micro-LED显示器散热不佳，影响显示器性能的技术问题，本实施例能够解决该缺陷。\n\n[0028]以下请结合具体实施例对本申请的显示装置进行详细描述。\n\n[0029]实施例一\n\n[0030]请参照图1所示，为本申请实施例一提供的显示装置的结构示意图。所述显示装置包括：显示模组1和散热模组2，所述显示模组1位于所述散热模组2的一侧；所述散热模组2用于对所述显示模组1进行散热。所述散热模组2包括平行于所述显示模组1设置的第一散热板21和第二散热板22，所述第一散热板21和所述第二散热板22组合后形成两端开口的空腔结构。所述散热模组2的一侧侧面具有进风口201，相对另一侧侧面具有出风口202，所述空腔形成散热风道。\n\n[0031]其中，所述显示模组1具有显示面与背面，所述显示面设置若干点阵排列的Mini-LED发光单元或Micro-LED发光单元，所述背面与所述散热模组2贴合。所述显示模组1工作时所产生的热量会通过所述显示模组1的背面传导至所述散热模组2上，再经由所述散热风道将热量排出。\n\n[0032]为了利于热传导进行散热，所述显示模组1与所述散热模组2之间通过导热胶粘合，所述导热胶为导热性能较好的胶材，具体材料不做限定。\n\n[0033]进一步的，所述导热胶中均匀的掺杂有金属粒子，由于金属具有良好的导热性能，因此可以进一步增强所述导热胶的热传导性能，使所述显示模组1一侧的热量快速的传导至所述散热模组2上。\n\n[0034]进一步的，为了增强所述散热模组2的散热性能，所述散热模组2的材料为金属材料，例如所述第一散热板21和所述第二散热板22可以采用铝合金板等。\n\n[0035]在一种实施例中，可以通过模压等方式一体化成型所述第一散热板21和所述第二散热板22，所述第一散热板21和所述第二散热板22为一体式结构可以简化制程。\n\n[0036]在一种实施例中，所述进风口201以及所述出风口202的的形状还可以设置为椭圆形、圆形、三角形和矩形的其中之一或者组合，所述进风口201以及所述出风口202的位置也可以根据所述显示模组1的实际散热需求而设置。\n\n[0037]如图1所示，在所述散热模组2的下部设置有进风口201，在所述散热模组2的上部设置有出风口202，所述散热模组2的内部中空设计形成散热风道，从而在所述散热模组2的内部形成一烟囱结构。由于所述显示模组1的大部分热量朝一个方向进行散发，即所述显示模组1的热量主要通过背面散发，从而使得所述显示模组1的大部分热量散发到所述散热模组2上以及所述散热模组2的内部，所述散热模组2内部温度高的空气，密度减小而上升，并从上部出风口202排出，这时会在低密度空气原来的地方形成负压区，于是所述散热模组2外部温度比较低而密度比重大的新鲜空气从所述散热模组2下部的进风口201被吸入所述散热风道。由此，在烟囱结构的作用下，热量易于被热空气以对流方法迅速带走。这样，达到了加快所述显示模组1散热的技术效果。\n\n[0038]为了进一步实现更好的散热效果，本实施例在所述第一散热板21面向所述第二散热板22的一侧表面设置有交错分布的散热翅23，所述散热翅23将所述散热风道分隔成多个散热子风道。\n\n[0039]如图2所示，为本申请实施例一提供的第一散热板的结构示意图。所述第一散热板21上的所述散热翅23可以与所述第一散热板的本体一体成型，或者所述散热翅23也可以单独安装在所述第一散热板21上。相邻两行和/或相邻两列的所述散热翅23交错分布，使自下而上运动的空气可以从相邻两所述散热翅23之间的间隙进入多个散热子风道中，然后在浮力的作用下继续向上运动。所述散热翅23可以起到分流作用，使得热空气在散热风道中分布均匀，从而延缓了热边界层的形成。所述散热翅23的设置增加了散热风道中流动空气的扰动，热空气在散热风道中流动状态由单向变为多向，使所述散热翅23之间的空气流速提高，进一步增强了所述散热模组的散热性能。\n\n[0040]进一步的，所述散热翅23倾斜于所述第一散热板21表面设置，所述散热翅23与所述第一散热板21表面之间的夹角为10°-80°。并且，所述散热翅23朝向所述出风口202一侧倾斜。\n\n[0041]由于所述散热翅23朝向所述出风口202一侧倾斜设计，因此可以减小空气在所述散热风道中流动的阻力，有助于散热风道中的空气与外界空气对流。\n\n[0042]进一步的，所述散热翅23的截面形状为圆形、三角形、矩形中的一种。\n\n[0043]进一步的，所述散热翅23在垂直于所述第二散热板22的方向上与所述第二散热板22之间具有预设距离。从而既能够实现所述散热翅23的分流作用及空气扰动作用，又由于空气在散热风道中流动的阻力进一步减小，因此有利于所述散热模组2的散热性能。\n\n[0044]在一种实施例中，所述散热翅23在所述第一散热板21上的分布密度由所述第一散热板21的中间区域向四周逐渐减小。如此，所述第一散热板21的中间区域的所述散热翅23可以很好的将热量向四周分流，有利于所述第一散热板21的中间区域的热量疏导，所述第一散热板21四周区域的所述散热翅23的密度相对较低，空气在散热风道中流动的阻力相对较小，可以快速的将散热风道中的热量带走。\n\n[0045]本申请的显示装置中散热模组的散热效率受外界环境输入热量和显示模组发热升温影响，当输入热量越大或升温越高，烟囱效应就越强，散热效果随之会更好。本申请通过在显示模组背后设计特殊的散热风道，无需专门从外界输入动力能源，利用气体受热膨胀密度减小自然向上流动的烟囱效应，再通过散热翅的设计强化空气对流实现散热，无需外部输入电能，节省能耗。\n\n[0046]实施例二\n\n[0047]如图3所示，为本申请实施例二提供的显示装置的结构示意图。本实施例与上述实施例一的显示装置的结构相同/相似，区别在于：本实施例的显示装置为双面屏显示装置，可以实现双面显示，即所述显示模组包括贴合于所述第一散热板21上的第一显示模组11以及贴合于所述第二散热板22上的第二显示模组12。\n\n[0048]所述第一显示模组11以及所述第二显示模组12的显示面设置若干点阵排列的Mini-LED发光单元或Micro-LED发光单元，当然，所述第一显示模组11以及所述第二显示模组12也可以为其他类型的显示模组，此处不做限制。\n\n[0049]本实施例由于在两个显示模组之间设置具有烟囱效应的散热模组，因此，可以有效解决显示模组散热不佳的问题，从而提升显示模组的显示效果及使用寿命。\n\n[0050]本申请的显示装置通过在显示模组的一侧设置具有烟囱效应的散热模组，并且散热模组内部再配合交错分布的散热翅，能够大大提升散热性能，解决传统Mini-LED或Micro-LED显示器散热不佳，影响显示器性能的问题。\n\n[0051]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10857, 23911, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种Micro-LED芯片的转移方法。\n\n背景技术\n\n[0002]微米级发光二极管(Micro-Light Emitting Diode，Micro-LED)显示器是一种以Micro-LED芯片作为像素点的自发光显示器，因其具有高亮度、高发光效率和低功耗等优点，逐渐成为了业界发展的新标杆。\n\n[0003]Micro-LED显示器在制造的过程中，通常采用巨量转移技术将巨量的Micro-LED芯片转移至基板上，其中，巨量用以表示数量巨多，例如成千上万乃至更多。但现有的巨量转移技术都存在一个较大的问题，即，巨量的Micro-LED芯片的转移效率和转移精度都比较低，因此导致最终制造得到的Micro-LED显示器的生产周期长且良率低。\n\n发明内容\n\n[0004]因此，有必要提供一种Micro-LED芯片的转移方法，用以解决在Micro-LED芯片的转移过程中转移效率和转移精度低，从而造成最终制造得到的Micro-LED显示器的生产周期长且良率低的问题。\n\n[0005]本发明提供一种Micro-LED芯片的转移方法，所述Micro-LED芯片的转移方法包括以下步骤：\n\n[0006]提供第一基板，所述第一基板上设有多个第一电极；\n\n[0007]提供第二基板，所述第二基板上设有多个第一Micro-LED芯片，多个所述第一Micro-LED芯片与多个所述第一电极对应设置；\n\n[0008]将多个所述第一Micro-LED芯片与多个所述第一电极进行键合；\n\n[0009]去除所述第二基板。\n\n[0010]在一些实施例中，在所述步骤“将多个所述第一Micro-LED芯片与多个所述第一电极进行键合”之前，所述Micro-LED芯片的转移方法还包括：\n\n[0011]采用吸附技术，将多个所述第一Micro-LED芯片置于多个所述第一电极上。\n\n[0012]在一些实施例中，所述吸附技术为真空吸附、静电力吸附、范德华力吸附、磁力吸附或自组装吸附。\n\n[0013]在一些实施例中，所述步骤“将多个所述第一Micro-LED芯片与多个所述第一电极进行键合”具体为：\n\n[0014]采用倒装芯片焊技术将多个所述第一Micro-LED芯片与多个所述第一电极进行键合。\n\n[0015]在一些实施例中，所述第一基板为阵列基板。\n\n[0016]在一些实施例中，所述第一电极为铜垫。\n\n[0017]在一些实施例中，多个所述第一电极和多个所述第一Micro-LED芯片均呈阵列状排布。\n\n[0018]在一些实施例中，所述第一基板上还设有多个第二电极；\n\n[0019]在所述步骤“去除所述第二基板”之后，所述Micro-LED芯片的转移方法还包括以下步骤：\n\n[0020]提供第三基板，所述第三基板上设有多个第二Micro-LED芯片，多个所述第二Micro-LED芯片与多个所述第二电极对应设置；\n\n[0021]将多个所述第二Micro-LED芯片与多个所述第二电极进行键合；\n\n[0022]去除所述第三基板。\n\n[0023]在一些实施例中，所述第一基板上还设有多个第三电极；\n\n[0024]在所述步骤“去除所述第三基板”之后，所述Micro-LED芯片的转移方法还包括以下步骤：\n\n[0025]提供第四基板，所述第四基板上设有多个第三Micro-LED芯片，多个所述第三Micro-LED芯片与多个所述第三电极对应设置；\n\n[0026]将多个所述第三Micro-LED芯片与多个所述第三电极进行键合；\n\n[0027]去除所述第四基板。\n\n[0028]在一些实施例中，多个所述第一Micro-LED芯片发出的光的颜色相同，多个所述第二Micro-LED芯片发出的光的颜色相同，多个所述第三Micro-LED芯片发出的光的颜色相同，所述第一Micro-LED芯片、所述第二Micro-LED芯片和所述第三Micro-LED芯片发出的光的颜色不同。\n\n[0029]本发明的Micro-LED芯片的转移方法，通过将多个第一Micro-LED芯片与多个第一电极对应设置，可一次性将多个第一Micro-LED芯片转移至多个第一电极上，提高了第一Micro-LED芯片的转移效率；同时，在转移过程中，只需使少量的第一Micro-LED芯片与少量的第一电极对准，即可确保多个第一Micro-LED芯片与多个第一电极全部对准，从而提高了第一Micro-LED芯片的转移精度。特别是在巨量转移的过程中，由于第一Micro-LED芯片的转移效率和转移精度都得以提高，因此提高了最终制造得到的Micro-LED显示器的生产周期和良率，节省了Micro-LED显示器的制造成本，使其适于量产。\n\n附图说明\n\n[0030]为了更清楚地说明本发明的实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0031]图1为本发明的实施例提供的Micro-LED芯片的转移方法的流程图。\n\n[0032]图2为本发明的实施例提供的第一种第一基板的结构示意图。\n\n[0033]图3为本发明的实施例提供的第二基板的结构示意图。\n\n[0034]图4为本发明的实施例提供的第二种第一基板的结构示意图。\n\n[0035]图5为本发明的实施例提供的第三基板的结构示意图。\n\n[0036]图6为本发明的实施例提供的第三种第一基板的结构示意图。\n\n[0037]图7为本发明的实施例提供的第四基板的结构示意图。\n\n具体实施方式\n\n[0038]下面将结合本发明的实施例中的附图，对本发明的实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0039]图1为本发明的实施例提供的Micro-LED芯片的转移方法的流程图，如图1所示，Micro-LED芯片的转移方法包括以下步骤：\n\n[0040]步骤S1，提供第一基板10，第一基板10上设有多个第一电极101。\n\n[0041]图2为本发明的实施例提供的第一种第一基板的结构示意图，图2中所示的第一基板10优选为阵列基板，即经过了阵列(array)制程后的玻璃基板。第一基板10上设有多个第一电极101(空白方框)，第一电极101优选为铜垫。\n\n[0042]步骤S2，提供第二基板20，第二基板20上设有多个第一Micro-LED芯片201，多个第一Micro-LED芯片201与多个第一电极101对应设置。\n\n[0043]图3为本发明的实施例提供的第二基板的结构示意图，图3中所示的第二基板20上设有多个第一Micro-LED芯片201，第一Micro-LED芯片201为能够发出特定颜色的光的器件。\n\n[0044]多个第一Micro-LED芯片201发出的光的颜色可以相同，例如，均发出红色的光，或者均发出绿色的光，或者均发出蓝色的光。多个第一Micro-LED芯片201发出的光的颜色也可不尽相同，例如，根据发出的光的颜色的不同，将多个第一Micro-LED芯片201划分为三种类型，其中，第一种类型的第一Micro-LED芯片201发出红色的光，第二种类型的第一Micro-LED芯片201发出绿色的光，第三种类型的第一Micro-LED芯片201发出蓝色的光。\n\n[0045]多个第一Micro-LED芯片201与多个第一电极101对应设置，即，多个第一Micro-LED芯片201在第二基板20上的排布与多个第一电极101在第一基板10上的排布完全一致。\n\n[0046]步骤S3，将多个第一Micro-LED芯片201与多个第一电极101进行键合。\n\n[0047]具体的，将多个第一Micro-LED芯片201与多个第一电极101进行对准，对准完成后，将多个第一Micro-LED芯片201置于多个第一电极101上，放置完成后，将多个第一Micro-LED芯片201与多个第一电极101进行键合。\n\n[0048]由于多个第一Micro-LED芯片201与多个第一电极101对应设置，因此可一次性将多个第一Micro-LED芯片201转移至多个第一电极101上，提高了第一Micro-LED芯片201的转移效率；同时，在转移过程中，只需使少量的第一Micro-LED芯片201与少量的第一电极101对准，即可确保多个第一Micro-LED芯片201与多个第一电极101全部对准，从而提高了第一Micro-LED芯片201的转移精度。\n\n[0049]步骤S4，去除第二基板20。\n\n[0050]需要说明的是，第一电极101和第一Micro-LED芯片201的数量分别可以达到成千上万乃至更多，此处将多个第一电极101称为巨量的第一电极101，将多个第一Micro-LED芯片201称为巨量的第一Micro-LED芯片201，此时，将巨量的第一Micro-LED芯片201转移至第一基板10中巨量的第一电极101上的过程即为巨量转移过程。\n\n[0051]可以理解的是，在巨量转移的过程中，由于第一Micro-LED芯片201的转移效率和转移精度都得以提高，因此提高了最终制造得到的Micro-LED显示器的生产周期和良率，节省了Micro-LED显示器的制造成本，使其适于量产。\n\n[0052]在一些实施例中，在步骤“将多个第一Micro-LED芯片201与多个第一电极101进行键合”之前，Micro-LED芯片的转移方法还包括：采用吸附技术，将多个第一Micro-LED芯片201置于多个第一电极101上。其中，吸附技术为真空吸附、静电力吸附、范德华力吸附、磁力吸附或自组装吸附。\n\n[0053]在一些实施例中，步骤“将多个第一Micro-LED芯片201与多个第一电极101进行键合”具体为：采用倒装芯片焊技术将多个第一Micro-LED芯片201与多个第一电极101进行键合。\n\n[0054]具体的，倒装芯片焊技术是一种芯片互连技术，指的是第一Micro-LED芯片201与第一电极101采用金球而非引线键合，从而实现互连。\n\n[0055]在一些实施例中，第一基板10为阵列基板，即经过了阵列(array)制程后的玻璃基板，第一基板10上的第一电极101为铜垫。\n\n[0056]在一些实施例中，多个第一电极101和多个第一Micro-LED芯片201均呈阵列状排布。\n\n[0057]具体的，如图2和图3所示所示，多个第一电极101在第一基板10上呈阵列排布，多个第一Micro-LED芯片201在第二基板20上呈阵列排布。在将多个第一Micro-LED芯片201与多个第一电极101进行键合之前，只需将第二基板20上的四个角落处的四个第一Micro-LED芯片201与第一基板10上的四个角落处的四个第一电极101进行对准，即可确保多个第一Micro-LED芯片201与多个第一电极101全部对准，从而提高了第一Micro-LED芯片201的转移精度。\n\n[0058]图4为本发明的实施例提供的第二种第一基板的结构示意图，与图1不同的是，图4中所示的第一基板10上还设有多个第二电极102(填充有斜线的方框)。Micro-LED芯片的转移方法还包括以下步骤：\n\n[0059]首先，提供第三基板30，第三基板30上设有多个第二Micro-LED芯片301，多个第二Micro-LED芯片301与多个第二电极102对应设置。然后，将多个第二Micro-LED芯片301与多个第二电极102进行键合。最后，去除第三基板30。\n\n[0060]图5为本发明的实施例提供的第三基板的结构示意图，图5中所示的第三基板30上设有多个第二Micro-LED芯片301，第二Micro-LED芯片301为能够发出特定颜色的光的器件。\n\n[0061]多个第二Micro-LED芯片301与多个第二电极102对应设置，即，多个第二Micro-LED芯片301在第三基板30上的排布与多个第二电极102在第一基板10上的排布完全一致。\n\n[0062]将多个第二Micro-LED芯片301与多个第二电极102进行对准，对准完成后，将多个第二Micro-LED芯片301置于多个第二电极102上，放置完成后，将多个第二Micro-LED芯片301与多个第二电极102进行键合。\n\n[0063]由于多个第二Micro-LED芯片301与多个第二电极102对应设置，因此可一次性将多个第二Micro-LED芯片301转移至多个第二电极102上，提高了第二Micro-LED芯片301的转移效率；同时，在转移过程中，只需使少量的第二Micro-LED芯片301与少量的第二电极102对准，即可确保多个第二Micro-LED芯片301与多个第二电极102全部对准，从而提高了第二Micro-LED芯片301的转移精度。\n\n[0064]需要说明的是，第二电极102和第二Micro-LED芯片301的数量分别可以达到成千上万乃至更多，此处将多个第二电极102称为巨量的第二电极102，将多个第二Micro-LED芯片301称为巨量的第二Micro-LED芯片301，此时，将巨量的第二Micro-LED芯片301转移至第一基板10中巨量的第二电极102上的过程即为巨量转移过程。\n\n[0065]可以理解的是，在巨量转移的过程中，由于第二Micro-LED芯片301的转移效率和转移精度都得以提高，因此提高了最终制造得到的Micro-LED显示器的生产周期和良率，节省了Micro-LED显示器的制造成本，使其适于量产。\n\n[0066]图6为本发明的实施例提供的第三种第一基板的结构示意图，与图4不同的是，图6中所示的第一基板10上还设有多个第三电极103(填充有交叉线的方框)。Micro-LED芯片的转移方法还包括以下步骤：\n\n[0067]首先，提供第四基板40，第四基板40上设有多个第三Micro-LED芯片401，多个第三Micro-LED芯片401与多个第三电极103对应设置。然后，将多个第三Micro-LED芯片401与多个第三电极103进行键合。最后，去除第四基板40。\n\n[0068]图7为本发明的实施例提供的第四基板的结构示意图，图7中所示的第四基板40上设有多个第三Micro-LED芯片401，第三Micro-LED芯片401为能够发出特定颜色的光的器件。\n\n[0069]多个第三Micro-LED芯片401与多个第三电极103对应设置，即，多个第三Micro-LED芯片401在第四基板40上的排布与多个第三电极103在第一基板10上的排布完全一致。\n\n[0070]将多个第三Micro-LED芯片401与多个第三电极103进行对准，对准完成后，将多个第三Micro-LED芯片401置于多个第三电极103上，放置完成后，将多个第三Micro-LED芯片401与多个第三电极103进行键合。\n\n[0071]由于多个第三Micro-LED芯片401与多个第三电极103对应设置，因此可一次性将多个第三Micro-LED芯片401转移至多个第三电极103上，提高了第三Micro-LED芯片401的转移效率；同时，在转移过程中，只需使少量的第三Micro-LED芯片401与少量的第三电极103对准，即可确保多个第三Micro-LED芯片401与多个第三电极103全部对准，从而提高了第三Micro-LED芯片401的转移精度。\n\n[0072]需要说明的是，第三电极103和第三Micro-LED芯片401的数量分别可以达到成千上万乃至更多，此处将多个第三电极103称为巨量的第三电极103，将多个第三Micro-LED芯片401称为巨量的第三Micro-LED芯片401，此时，将巨量的第三Micro-LED芯片401转移至第一基板10中巨量的第三电极103上的过程即为巨量转移过程。\n\n[0073]可以理解的是，在巨量转移的过程中，由于第三Micro-LED芯片401的转移效率和转移精度都得以提高，因此提高了最终制造得到的Micro-LED显示器的生产周期和良率，节省了Micro-LED显示器的制造成本，使其适于量产。\n\n[0074]在一些实施例中，多个第一Micro-LED芯片201发出的光的颜色相同，多个第二Micro-LED芯片301发出的光的颜色相同，多个第三Micro-LED芯片401发出的光的颜色相同，第一Micro-LED芯片201、第二Micro-LED芯片301和第三Micro-LED芯片401发出的光的颜色不同。\n\n[0075]例如，多个第一Micro-LED芯片201均发出红色的光，多个第二Micro-LED芯片301均发出绿色的光，多个第三Micro-LED芯片401均发出蓝色的光。\n\n[0076]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0077]最后应说明的是：以上实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种Micro-LED芯片的转移方法。\n\n背景技术\n\n[0002]微米级发光二极管(Micro-Light Emitting Diode，Micro-LED)显示器是一种以Micro-LED芯片作为像素点的自发光显示器，因其具有高亮度、高发光效率和低功耗等优点，逐渐成为了业界发展的新标杆。\n\n[0003]Micro-LED显示器在制造的过程中，通常采用巨量转移技术将巨量的Micro-LED芯片转移至基板上，其中，巨量用以表示数量巨多，例如成千上万乃至更多。但现有的巨量转移技术都存在一个较大的问题，即，巨量的Micro-LED芯片的转移效率和转移精度都比较低，因此导致最终制造得到的Micro-LED显示器的生产周期长且良率低。\n\n发明内容\n\n[0004]因此，有必要提供一种Micro-LED芯片的转移方法，用以解决在Micro-LED芯片的转移过程中转移效率和转移精度低，从而造成最终制造得到的Micro-LED显示器的生产周期长且良率低的问题。\n\n[0005]本发明提供一种Micro-LED芯片的转移方法，所述Micro-LED芯片的转移方法包括以下步骤：\n\n[0006]提供第一基板，所述第一基板上设有多个第一电极；\n\n[0007]提供第二基板，所述第二基板上设有多个第一Micro-LED芯片，多个所述第一Micro-LED芯片与多个所述第一电极对应设置；\n\n[0008]将多个所述第一Micro-LED芯片与多个所述第一电极进行键合；\n\n[0009]去除所述第二基板。\n\n[0010]在一些实施例中，在所述步骤“将多个所述第一Micro-LED芯片与多个所述第一电极进行键合”之前，所述Micro-LED芯片的转移方法还包括：\n\n[0011]采用吸附技术，将多个所述第一Micro-LED芯片置于多个所述第一电极上。\n\n[0012]在一些实施例中，所述吸附技术为真空吸附、静电力吸附、范德华力吸附、磁力吸附或自组装吸附。\n\n[0013]在一些实施例中，所述步骤“将多个所述第一Micro-LED芯片与多个所述第一电极进行键合”具体为：\n\n[0014]采用倒装芯片焊技术将多个所述第一Micro-LED芯片与多个所述第一电极进行键合。\n\n[0015]在一些实施例中，所述第一基板为阵列基板。\n\n[0016]在一些实施例中，所述第一电极为铜垫。\n\n[0017]在一些实施例中，多个所述第一电极和多个所述第一Micro-LED芯片均呈阵列状排布。\n\n[0018]在一些实施例中，所述第一基板上还设有多个第二电极；\n\n[0019]在所述步骤“去除所述第二基板”之后，所述Micro-LED芯片的转移方法还包括以下步骤：\n\n[0020]提供第三基板，所述第三基板上设有多个第二Micro-LED芯片，多个所述第二Micro-LED芯片与多个所述第二电极对应设置；\n\n[0021]将多个所述第二Micro-LED芯片与多个所述第二电极进行键合；\n\n[0022]去除所述第三基板。\n\n[0023]在一些实施例中，所述第一基板上还设有多个第三电极；\n\n[0024]在所述步骤“去除所述第三基板”之后，所述Micro-LED芯片的转移方法还包括以下步骤：\n\n[0025]提供第四基板，所述第四基板上设有多个第三Micro-LED芯片，多个所述第三Micro-LED芯片与多个所述第三电极对应设置；\n\n[0026]将多个所述第三Micro-LED芯片与多个所述第三电极进行键合；\n\n[0027]去除所述第四基板。\n\n[0028]在一些实施例中，多个所述第一Micro-LED芯片发出的光的颜色相同，多个所述第二Micro-LED芯片发出的光的颜色相同，多个所述第三Micro-LED芯片发出的光的颜色相同，所述第一Micro-LED芯片、所述第二Micro-LED芯片和所述第三Micro-LED芯片发出的光的颜色不同。\n\n[0029]本发明的Micro-LED芯片的转移方法，通过将多个第一Micro-LED芯片与多个第一电极对应设置，可一次性将多个第一Micro-LED芯片转移至多个第一电极上，提高了第一Micro-LED芯片的转移效率；同时，在转移过程中，只需使少量的第一Micro-LED芯片与少量的第一电极对准，即可确保多个第一Micro-LED芯片与多个第一电极全部对准，从而提高了第一Micro-LED芯片的转移精度。特别是在巨量转移的过程中，由于第一Micro-LED芯片的转移效率和转移精度都得以提高，因此提高了最终制造得到的Micro-LED显示器的生产周期和良率，节省了Micro-LED显示器的制造成本，使其适于量产。\n\n附图说明\n\n[0030]为了更清楚地说明本发明的实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0031]图1为本发明的实施例提供的Micro-LED芯片的转移方法的流程图。\n\n[0032]图2为本发明的实施例提供的第一种第一基板的结构示意图。\n\n[0033]图3为本发明的实施例提供的第二基板的结构示意图。\n\n[0034]图4为本发明的实施例提供的第二种第一基板的结构示意图。\n\n[0035]图5为本发明的实施例提供的第三基板的结构示意图。\n\n[0036]图6为本发明的实施例提供的第三种第一基板的结构示意图。\n\n[0037]图7为本发明的实施例提供的第四基板的结构示意图。\n\n具体实施方式\n\n[0038]下面将结合本发明的实施例中的附图，对本发明的实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0039]图1为本发明的实施例提供的Micro-LED芯片的转移方法的流程图，如图1所示，Micro-LED芯片的转移方法包括以下步骤：\n\n[0040]步骤S1，提供第一基板10，第一基板10上设有多个第一电极101。\n\n[0041]图2为本发明的实施例提供的第一种第一基板的结构示意图，图2中所示的第一基板10优选为阵列基板，即经过了阵列(array)制程后的玻璃基板。第一基板10上设有多个第一电极101(空白方框)，第一电极101优选为铜垫。\n\n[0042]步骤S2，提供第二基板20，第二基板20上设有多个第一Micro-LED芯片201，多个第一Micro-LED芯片201与多个第一电极101对应设置。\n\n[0043]图3为本发明的实施例提供的第二基板的结构示意图，图3中所示的第二基板20上设有多个第一Micro-LED芯片201，第一Micro-LED芯片201为能够发出特定颜色的光的器件。\n\n[0044]多个第一Micro-LED芯片201发出的光的颜色可以相同，例如，均发出红色的光，或者均发出绿色的光，或者均发出蓝色的光。多个第一Micro-LED芯片201发出的光的颜色也可不尽相同，例如，根据发出的光的颜色的不同，将多个第一Micro-LED芯片201划分为三种类型，其中，第一种类型的第一Micro-LED芯片201发出红色的光，第二种类型的第一Micro-LED芯片201发出绿色的光，第三种类型的第一Micro-LED芯片201发出蓝色的光。\n\n[0045]多个第一Micro-LED芯片201与多个第一电极101对应设置，即，多个第一Micro-LED芯片201在第二基板20上的排布与多个第一电极101在第一基板10上的排布完全一致。\n\n[0046]步骤S3，将多个第一Micro-LED芯片201与多个第一电极101进行键合。\n\n[0047]具体的，将多个第一Micro-LED芯片201与多个第一电极101进行对准，对准完成后，将多个第一Micro-LED芯片201置于多个第一电极101上，放置完成后，将多个第一Micro-LED芯片201与多个第一电极101进行键合。\n\n[0048]由于多个第一Micro-LED芯片201与多个第一电极101对应设置，因此可一次性将多个第一Micro-LED芯片201转移至多个第一电极101上，提高了第一Micro-LED芯片201的转移效率；同时，在转移过程中，只需使少量的第一Micro-LED芯片201与少量的第一电极101对准，即可确保多个第一Micro-LED芯片201与多个第一电极101全部对准，从而提高了第一Micro-LED芯片201的转移精度。\n\n[0049]步骤S4，去除第二基板20。\n\n[0050]需要说明的是，第一电极101和第一Micro-LED芯片201的数量分别可以达到成千上万乃至更多，此处将多个第一电极101称为巨量的第一电极101，将多个第一Micro-LED芯片201称为巨量的第一Micro-LED芯片201，此时，将巨量的第一Micro-LED芯片201转移至第一基板10中巨量的第一电极101上的过程即为巨量转移过程。\n\n[0051]可以理解的是，在巨量转移的过程中，由于第一Micro-LED芯片201的转移效率和转移精度都得以提高，因此提高了最终制造得到的Micro-LED显示器的生产周期和良率，节省了Micro-LED显示器的制造成本，使其适于量产。\n\n[0052]在一些实施例中，在步骤“将多个第一Micro-LED芯片201与多个第一电极101进行键合”之前，Micro-LED芯片的转移方法还包括：采用吸附技术，将多个第一Micro-LED芯片201置于多个第一电极101上。其中，吸附技术为真空吸附、静电力吸附、范德华力吸附、磁力吸附或自组装吸附。\n\n[0053]在一些实施例中，步骤“将多个第一Micro-LED芯片201与多个第一电极101进行键合”具体为：采用倒装芯片焊技术将多个第一Micro-LED芯片201与多个第一电极101进行键合。\n\n[0054]具体的，倒装芯片焊技术是一种芯片互连技术，指的是第一Micro-LED芯片201与第一电极101采用金球而非引线键合，从而实现互连。\n\n[0055]在一些实施例中，第一基板10为阵列基板，即经过了阵列(array)制程后的玻璃基板，第一基板10上的第一电极101为铜垫。\n\n[0056]在一些实施例中，多个第一电极101和多个第一Micro-LED芯片201均呈阵列状排布。\n\n[0057]具体的，如图2和图3所示所示，多个第一电极101在第一基板10上呈阵列排布，多个第一Micro-LED芯片201在第二基板20上呈阵列排布。在将多个第一Micro-LED芯片201与多个第一电极101进行键合之前，只需将第二基板20上的四个角落处的四个第一Micro-LED芯片201与第一基板10上的四个角落处的四个第一电极101进行对准，即可确保多个第一Micro-LED芯片201与多个第一电极101全部对准，从而提高了第一Micro-LED芯片201的转移精度。\n\n[0058]图4为本发明的实施例提供的第二种第一基板的结构示意图，与图1不同的是，图4中所示的第一基板10上还设有多个第二电极102(填充有斜线的方框)。Micro-LED芯片的转移方法还包括以下步骤：\n\n[0059]首先，提供第三基板30，第三基板30上设有多个第二Micro-LED芯片301，多个第二Micro-LED芯片301与多个第二电极102对应设置。然后，将多个第二Micro-LED芯片301与多个第二电极102进行键合。最后，去除第三基板30。\n\n[0060]图5为本发明的实施例提供的第三基板的结构示意图，图5中所示的第三基板30上设有多个第二Micro-LED芯片301，第二Micro-LED芯片301为能够发出特定颜色的光的器件。\n\n[0061]多个第二Micro-LED芯片301与多个第二电极102对应设置，即，多个第二Micro-LED芯片301在第三基板30上的排布与多个第二电极102在第一基板10上的排布完全一致。\n\n[0062]将多个第二Micro-LED芯片301与多个第二电极102进行对准，对准完成后，将多个第二Micro-LED芯片301置于多个第二电极102上，放置完成后，将多个第二Micro-LED芯片301与多个第二电极102进行键合。\n\n[0063]由于多个第二Micro-LED芯片301与多个第二电极102对应设置，因此可一次性将多个第二Micro-LED芯片301转移至多个第二电极102上，提高了第二Micro-LED芯片301的转移效率；同时，在转移过程中，只需使少量的第二Micro-LED芯片301与少量的第二电极102对准，即可确保多个第二Micro-LED芯片301与多个第二电极102全部对准，从而提高了第二Micro-LED芯片301的转移精度。\n\n[0064]需要说明的是，第二电极102和第二Micro-LED芯片301的数量分别可以达到成千上万乃至更多，此处将多个第二电极102称为巨量的第二电极102，将多个第二Micro-LED芯片301称为巨量的第二Micro-LED芯片301，此时，将巨量的第二Micro-LED芯片301转移至第一基板10中巨量的第二电极102上的过程即为巨量转移过程。\n\n[0065]可以理解的是，在巨量转移的过程中，由于第二Micro-LED芯片301的转移效率和转移精度都得以提高，因此提高了最终制造得到的Micro-LED显示器的生产周期和良率，节省了Micro-LED显示器的制造成本，使其适于量产。\n\n[0066]图6为本发明的实施例提供的第三种第一基板的结构示意图，与图4不同的是，图6中所示的第一基板10上还设有多个第三电极103(填充有交叉线的方框)。Micro-LED芯片的转移方法还包括以下步骤：\n\n[0067]首先，提供第四基板40，第四基板40上设有多个第三Micro-LED芯片401，多个第三Micro-LED芯片401与多个第三电极103对应设置。然后，将多个第三Micro-LED芯片401与多个第三电极103进行键合。最后，去除第四基板40。\n\n[0068]图7为本发明的实施例提供的第四基板的结构示意图，图7中所示的第四基板40上设有多个第三Micro-LED芯片401，第三Micro-LED芯片401为能够发出特定颜色的光的器件。\n\n[0069]多个第三Micro-LED芯片401与多个第三电极103对应设置，即，多个第三Micro-LED芯片401在第四基板40上的排布与多个第三电极103在第一基板10上的排布完全一致。\n\n[0070]将多个第三Micro-LED芯片401与多个第三电极103进行对准，对准完成后，将多个第三Micro-LED芯片401置于多个第三电极103上，放置完成后，将多个第三Micro-LED芯片401与多个第三电极103进行键合。\n\n[0071]由于多个第三Micro-LED芯片401与多个第三电极103对应设置，因此可一次性将多个第三Micro-LED芯片401转移至多个第三电极103上，提高了第三Micro-LED芯片401的转移效率；同时，在转移过程中，只需使少量的第三Micro-LED芯片401与少量的第三电极103对准，即可确保多个第三Micro-LED芯片401与多个第三电极103全部对准，从而提高了第三Micro-LED芯片401的转移精度。\n\n[0072]需要说明的是，第三电极103和第三Micro-LED芯片401的数量分别可以达到成千上万乃至更多，此处将多个第三电极103称为巨量的第三电极103，将多个第三Micro-LED芯片401称为巨量的第三Micro-LED芯片401，此时，将巨量的第三Micro-LED芯片401转移至第一基板10中巨量的第三电极103上的过程即为巨量转移过程。\n\n[0073]可以理解的是，在巨量转移的过程中，由于第三Micro-LED芯片401的转移效率和转移精度都得以提高，因此提高了最终制造得到的Micro-LED显示器的生产周期和良率，节省了Micro-LED显示器的制造成本，使其适于量产。\n\n[0074]在一些实施例中，多个第一Micro-LED芯片201发出的光的颜色相同，多个第二Micro-LED芯片301发出的光的颜色相同，多个第三Micro-LED芯片401发出的光的颜色相同，第一Micro-LED芯片201、第二Micro-LED芯片301和第三Micro-LED芯片401发出的光的颜色不同。\n\n[0075]例如，多个第一Micro-LED芯片201均发出红色的光，多个第二Micro-LED芯片301均发出绿色的光，多个第三Micro-LED芯片401均发出蓝色的光。\n\n[0076]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0077]最后应说明的是：以上实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10858, 23912, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种基板和基板的制备方法。\n\n背景技术\n\n[0002]Mini LED基板在制备过程中，需要先在Mini LED绑定端子处进行锡膏印刷，然后再将Mini LED固定在锡膏上。在现有的锡膏印刷工艺中，在基板相对的两侧各设置一把刮刀，然后两把刮刀通过钢网交替对基板进行整面印刷，然而，由于刮刀的压力过大，使得印刷时钢网与基板的接触力较大，常会造成基板上线路被压伤而出现短路，影响基板的使用效果。\n\n[0003]因此，现有的Mini LED基板存在线路易被压伤的技术问题，需要改进。\n\n发明内容\n\n[0004]本申请实施例提供一种基板和基板的制备方法，用以缓解现有的Mini LED基板中线路易被压伤的技术问题。\n\n[0005]本申请提供一种基板的制备方法，包括：\n\n[0006]提供衬底；\n\n[0007]在所述衬底一侧制备发光器件绑定端子和驱动发光器件发光的像素驱动电路，所述发光器件绑定端子位于基板的发光器件绑定区内，所述像素驱动电路位于所述基板的驱动电路区内；\n\n[0008]在所述发光器件绑定端子远离所述衬底的一侧形成防刮层，所述防刮层覆盖所述像素驱动电路，在所述防刮层中图案化形成暴露所述发光器件绑定端子的第一过孔；\n\n[0009]通过丝网印刷法在所述第一过孔内填充焊膏；\n\n[0010]剥离所述防刮层，将发光器件通过所述焊膏与所述发光器件绑定端子绑定。\n\n[0011]在本申请的基板的制备方法中，所述防刮层包括无机材料、有机复合材料、有机无机复合材料、以及熔点低于阈值的金属材料中的至少一种。\n\n[0012]在本申请的基板的制备方法中，所述防刮层包括正性光敏材料或负性光敏材料。\n\n[0013]在本申请的基板的制备方法中，所述防刮层包括光敏性聚酰亚胺。\n\n[0014]在本申请的基板的制备方法中，剥离所述防刮层的步骤，包括：采用准分子激光作为光源照射所述防刮层，将所述防刮层剥离。\n\n[0015]在本申请的基板的制备方法中，在所述发光器件绑定端子远离所述衬底的一侧依次形成反射层和防刮层的步骤，包括：形成厚度大于3微米的防刮层。\n\n[0016]在本申请的基板的制备方法中，在所述衬底一侧制备发光器件绑定端子和驱动发光器件发光的像素驱动电路的步骤，包括：在所述衬底上依次形成第一金属层、栅绝缘层、有源层和第二金属层，所述第一金属层图案化形成所述像素驱动电路中各晶体管的栅极，所述第二金属层图案化形成所述发光器件绑定端子和所述各晶体管的源漏极。\n\n[0017]在本申请的基板的制备方法中，在所述发光器件绑定端子远离所述衬底的一侧形成防刮层的步骤之前，还包括：在所述基板的芯片绑定区内形成芯片绑定端子。\n\n[0018]在本申请的基板的制备方法中，所述发光器件包括Mini LED或Micro LED。\n\n[0019]本申请还提供一种基板，采用上述任一项所述的基板的制备方法制成。\n\n[0020]有益效果：本申请提供一种基板和基板的制备方法，该制备方法包括：提供衬底；在所述衬底一侧制备发光器件绑定端子和驱动发光器件发光的像素驱动电路，所述发光器件绑定端子位于基板的发光器件绑定区内，所述像素驱动电路位于所述基板的驱动电路区内；在所述发光器件绑定端子远离所述衬底的一侧形成防刮层，所述防刮层覆盖所述像素驱动电路，在所述防刮层中图案化形成暴露所述发光器件绑定端子的第一过孔；通过丝网印刷法在所述第一过孔内填充焊膏；剥离所述防刮层，将发光器件通过所述焊膏与所述发光器件绑定端子绑定。本申请在填充焊膏之前，先形成一层防刮层，使得丝网印刷时基板的驱动电路区中形成像素驱动电路的各信号线不会被压伤，在填充焊膏后，将防刮层剥离，实现了在不影响基板性能的同时防止基板上线路被压伤。\n\n附图说明\n\n[0021]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0022]图1为本申请实施例提供的基板的制备方法的流程示意图。\n\n[0023]图2为本申请实施例提供的基板的平面结构示意图。\n\n[0024]图3为本申请实施例提供的基板的制备方法的第一阶段示意图。\n\n[0025]图4为本申请实施例提供的基板的制备方法的第二阶段示意图。\n\n[0026]图5为本申请实施例提供的基板的制备方法的第三阶段示意图。\n\n[0027]图6为本申请实施例提供的基板的制备方法的第四阶段示意图。\n\n[0028]图7为本申请实施例提供的基板的制备方法的第五阶段示意图。\n\n[0029]图8为本申请实施例提供的基板的制备方法的第六阶段示意图。\n\n[0030]图9为本申请实施例提供的基板的制备方法的第七阶段示意图。\n\n[0031]图10为本申请实施例提供的基板的制备方法的第八阶段示意图。\n\n[0032]图11为本申请实施例提供的背光模组的结构示意图。\n\n具体实施方式\n\n[0033]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0034]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0035]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0036]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0037]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0038]本申请实施例提供一种基板和基板的制备方法，用以缓解现有的Mini LED基板中线路易被压伤的技术问题。\n\n[0039]如图1所示，本申请提供一种基板的制备方法，包括：\n\n[0040]S101：提供衬底；\n\n[0041]S102：在衬底一侧制备发光器件绑定端子和驱动发光器件发光的像素驱动电路，发光器件绑定端子位于基板的发光器件绑定区内，像素驱动电路位于基板的驱动电路区内；\n\n[0042]S103：在发光器件绑定端子远离衬底的一侧形成防刮层，防刮层覆盖像素驱动电路，在防刮层中图案化形成暴露发光器件绑定端子的第一过孔；\n\n[0043]S104：通过丝网印刷法在第一过孔内填充焊膏；\n\n[0044]S105：剥离防刮层，将发光器件通过焊膏与发光器件绑定端子绑定。\n\n[0045]如图2所示，为本申请实施例提供的基板的平面结构示意图，基板包括芯片绑定区(图未示出)、驱动电路区200以及发光器件绑定区300。基板上设置有阵列排布的多个发光器件绑定区300，每个发光器件绑定区300内形成有发光器件绑定端子162，其中发光器件绑定端子162包括第一绑定部分1621和第二绑定部分1622，在形成发光器件绑定端子162后，先通过丝网印刷法透过钢网在第一绑定部分1621和第二绑定部分1622之间的第一过孔内填充焊膏，然后再将发光器件通过焊膏与发光器件绑定端子162绑定，实现与基板的固定。对应每个发光器件，均设置有对应的像素驱动电路来驱动发光器件发光，像素驱动电路设置在驱动电路区200内，驱动电路区200与发光器件绑定区300相邻，在基板中也呈阵列排布。芯片绑定区位于基板的边缘区域，芯片绑定区内设置有驱动芯片，用于给每个像素驱动电路提供电信号，以使像素驱动电路工作来驱动发光器件发光。\n\n[0046]基板自下而上包括衬底、第一金属层、栅绝缘层、有源层和第二金属层，为方便表示，图2中仅示出了第一金属层和第二金属层，其中第一金属层图案化形成了多条信号线，包括第一扫描线51、第二扫描线52、第三扫描线53、第四扫描线54以及存储电容的第一极板55，第二金属层也图案化形成多条信号线，包括第一数据线61、电源高电位信号线62、第二数据线63、感测线64、第三数据线65、电源高电位信号线66以及存储电容的第二极板67，此外，第二金属层在发光器件绑定区300内形成发光器件绑定端子162。在驱动电路区200内，第一金属层形成的各信号线与第二金属层形成的各信号线在衬底上的投影存在多处交叠区域，交叠区域的厚度相对于其他区域较大，当通过丝网印刷法透过钢网在第一绑定部分1621和第二绑定部分1622之间的第一过孔内填充焊膏时，刮刀最易压伤交叠区域的信号线。本申请通过在填充焊膏之前，先形成一层防刮层，使得丝网印刷时基板的驱动电路区中形成像素驱动电路的各信号线不会被压伤，在填充焊膏后，将防刮层剥离，实现了在不影响基板性能的同时防止基板上线路被压伤。\n\n[0047]下面结合图3至图10对该制备方法进行具体说明，其中图3和图10均为图2中沿A-A截面的膜层结构示意图。\n\n[0048]在S101中，提供衬底。如图3至图10所示，本申请实施例提供的基板，包括芯片绑定区100、驱动电路区200以及发光器件绑定区300。如图3所示，衬底11可以是柔性衬底，也可以是刚性衬底，如玻璃等，本申请对衬底11的材质不做限制。\n\n[0049]在S102中，在衬底一侧制备发光器件绑定端子和驱动发光器件发光的像素驱动电路，发光器件绑定端子位于基板的发光器件绑定区内，像素驱动电路位于基板的驱动电路区内。本实施例以基板在驱动电路区200内形成底栅结构的薄膜晶体管为例进行说明，如图4所示，在衬底11上依次制备第一金属层、栅绝缘层13、有源层14、欧姆接触层15和第二金属层16。\n\n[0050]在衬底11与第一金属层之间，通常还设置有阻隔层和缓冲层(图未示出)，阻隔层的材料一般为氧化硅(SiOx)，用于阻挡外界的杂质粒子进入衬底11和隔绝水氧，缓冲层一般采用氮化硅(SiNx)，氮化硅具有较强的离子阻隔能力和很好的水氧隔绝能力，能有效防止杂质在热制程中扩散到薄膜晶体管中。\n\n[0051]第一金属层形成在衬底11上，并在驱动电路区200内图案化形成薄膜晶体管的栅极123，在芯片绑定区100内图案化形成第一导电构件121，在发光器件绑定区300内图案化形成第二导电构件(图未示出)，第一导电构件121和第二导电构件可以是第一金属层中形成的各类信号线。第一金属层的材料包括铜、钼铜合金和钼铝合金中的至少一种。\n\n[0052]栅绝缘层13形成在第一金属层上，栅绝缘层13的材料通常为氮化硅(SiNx)和氧化硅(SiOx)中的至少一种，并且可以是单层或多层结构。\n\n[0053]有源层14形成在栅绝缘层13上，有源层14可以是非晶硅材料、多晶硅(a-Si)材料或金属氧化物半导体材料等，其中金属氧化物半导体可以包括铟锡氧化物、铟镓锌氧化物、铟锌锡氧化物、铟镓锌锡氧化物中的至少一种。\n\n[0054]欧姆接触层15形成在有源层14上，第二金属层16形成在欧姆接触层15上。第二金属层16的材料包括铜、钼铜合金和钼铝合金中的至少一种。\n\n[0055]如图5所示，在形成第二金属层16后，对有源层14、欧姆接触层15和第二金属层16图案化。\n\n[0056]有源层14包括分别形成在芯片绑定区100、驱动电路区200和发光器件绑定区300中的三部分，其中位于驱动电路区200中的部分包括通过掺杂N型杂质离子或P型杂质离子而形成的源极区域和漏极区域、以及位于源极区域和漏极区域之间的沟道区域。\n\n[0057]欧姆接触层15包括分别形成在芯片绑定区100、驱动电路区200和发光器件绑定区300中的三部分，其中在驱动电路区200的部分，分别形成在有源层14的源极区域和漏极区域上。\n\n[0058]第二金属层16在驱动电路区200内图案化形成薄膜晶体管的源极163和漏极164，在芯片绑定区100内图案化形成芯片绑定端子161，在发光器件绑定区300内图案化形成发光器件绑定端子162，源极163和漏极164分别与有源层14的源极区域和漏极区域连接，芯片绑定端子161通过过孔与第一导电构件121连接。\n\n[0059]通过上述步骤，在基板的芯片绑定区100内形成了芯片绑定端子161，在基板的驱动电路区200内形成了驱动电路，在基板的发光器件绑定区300内形成了发光器件绑定端子162。\n\n[0060]上述实施例以底栅结构的薄膜晶体管进行说明，但不限于此，也可以形成顶栅结构的薄膜晶体管，此时，有源层14形成在衬底11与第一金属层之间。\n\n[0061]如图6所示，钝化层17形成在第二金属层上，且为整层设置，钝化层17的材料通常为氮化硅(SiNx)和氧化硅(SiOx)中的至少一种，并且可以是单层或多层结构。在钝化层17形成后，在芯片绑定区100和发光器件绑定区300内均形成有过孔。\n\n[0062]如图7所示，在钝化层17上形成有电极层，图案化形成电极18，电极18位于芯片绑定区100内，通过钝化层17中过孔与芯片绑定端子161连接。\n\n[0063]在S103中，在发光器件绑定端子远离衬底的一侧形成防刮层，防刮层覆盖像素驱动电路，在防刮层中图案化形成暴露发光器件绑定端子的第一过孔。\n\n[0064]如图8所示，防刮层20的材料包括无机材料、有机复合材料、有机无机复合材料、以及熔点低于阈值的金属材料中的至少一种，可以是这些材料形成的单层，也可以是其中两种或多种材料形成的复合膜层。防刮层20对应基板的驱动电路区200设置，驱动电路区200内形成有像素驱动电路，包括第一金属层和第二金属层16图案化形成的交叠设置的多条信号线，此外，防刮层20也可以为整层设置的结构，延伸覆盖整个衬底11所在的区域，仅在发光器件绑定区300内存在第一过孔，其他区域都被防刮层20覆盖保护。防刮层20的厚度大于3微米。\n\n[0065]在一种实施例中，防刮层20包括正性光敏材料或负性光敏材料。当防刮层20为正性光敏材料，在形成第一过孔时，对发光器件绑定端子162位置进行曝光，其他部分不曝光，然后显影时对应发光器件绑定端子162所在位置形成第一过孔，当防刮层20为负性光敏材料，在形成第一过孔时，对发光器件绑定端子162位置不曝光，其他部分进行曝光，然后同样地显影时对应发光器件绑定端子162所在位置形成第一过孔。\n\n[0066]防刮层20的材料优选为光敏性聚酰亚胺，则在显影去除第一过孔内的材料时，可采用多种不同的显影液进行去除。\n\n[0067]在一种实施例中，在47摄氏度下，用质量分数比为1:1:1的乙醇胺、N-甲基吡咯烷酮和水混合形成显影液，对曝光后的防刮层20进行2.5分钟的显影，形成第一过孔。\n\n[0068]在一种实施例中，在47摄氏度下，用质量分数比为4:1:1的乙醇胺、N-甲基吡咯烷酮和水混合形成显影液，对曝光后的防刮层20进行1.5分钟的显影，形成第一过孔。\n\n[0069]在一种实施例中，用浓度为10％的四甲基氢氧化铵溶液，对曝光后的防刮层20进行18分钟的显影，形成第一过孔。\n\n[0070]在一种实施例中，在发光器件绑定端子162远离衬底11的一侧，先形成反射层19，然后再形成防刮层20，然后对反射层19和防刮层20图案化形成第一过孔，第一过孔位于发光器件绑定区300内，且将发光器件绑定端子162暴露出。在形成第一过孔时，先形成反射层19和防刮层20，再同时在该区域形成第一过孔。此外，钝化层17在该位置的过孔，也可以是与反射层19和防刮层20一起形成。\n\n[0071]在后续与发光器件绑定后，发光器件发出的光遇到其他部件后会发射回来，由于基板设置有反射层19，反射回的光在照射到反射层19上时，又会被反射回去，因此提高了光线的利用率。反射层19采用反射率高的材料制成。\n\n[0072]在S104中，通过丝网印刷法在第一过孔内填充焊膏。\n\n[0073]如图9所示，第一过孔内填充有焊膏30，具体可以是锡膏。在填充时，在基板上先设置一钢网，钢网的网格与第一过孔对应，然后在钢网相对的两侧各设置一刮刀，两刮刀来回交替向钢网的另一侧进行印刷工作，带动焊膏30也从基板的一侧从另一侧移动，在焊膏30被刮刀带动移动到第一过孔处时，焊膏30会从钢网上对应的网格处掉落至第一过孔中，最终使得焊膏30会填充至第一过孔中。\n\n[0074]在S105中，剥离防刮层，将发光器件通过焊膏与发光器件绑定端子绑定。\n\n[0075]如图10所示，在填充好焊膏30后，将防刮层20进行剥离。剥离时，可以采用准分子激光作为光源照射防刮层20，将防刮层20剥离，也可以采用干刻工艺将防刮层20刻蚀去除，具体去除方法根据材料的特性而定，凡能对防刮层20进行剥离的工艺均在本申请的保护范围内。\n\n[0076]在采用准分子激光照射剥离时，由于准分子激光具有高能量密度，在照射防刮层20时，激光在基板其他膜层中损失较少，在到达防刮层20与反射层19的交界处时，被防刮层20吸收，使防刮层20温度升高发生热分解，从而达到防刮层20从基板其他膜层上剥离的目的。此外，由于反射层19的高反射性，激光会被反射层19反射，因此进一步增强了激光剥离的效果，增加了产品信赖性。以防刮层20为聚酰亚胺为例，采用准分子激光作为光源照射防刮层20时，可以采用波长为308纳米的准分子激光作为光源，准分子激光的能量密度阈值为160mj/cm2，此种设置既能保证防刮层20可以完全与其他膜层剥离，又不会因能量过高对其他膜层造成损伤。\n\n[0077]在防刮层20去除后，将发光器件40通过焊膏30与发光器件绑定端子162绑定，发光器件包括Mini LED或Micro LED器件。绑定完成后将基板暂存一段时间后，再进行回流焊接等其他工序，完成基板的制作。\n\n[0078]本申请的制备方法中，在填充焊膏之前，先形成一层防刮层，形成保护，使得丝网印刷时基板的驱动电路区中的各线路不会被压伤，在填充焊膏后，将防刮层剥离，使得反射层暴露出来，又不会影响基板的反射率，因此实现了对防刮和降低反射率的兼顾。\n\n[0079]本申请还提供一种基板，采用上述任一项所述的制备方法制成。通过在填充焊膏之前，先形成一层防刮层，使得丝网印刷时基板的驱动电路区中形成像素驱动电路的各信号线不会被压伤，在填充焊膏后，将防刮层剥离，实现了在不影响基板性能的同时防止基板上线路被压伤。\n\n[0080]如图11所示，本申请还提供一种背光模组，该背光模组包括基板201、发光器件202、胶框203、扩散板204、反射片205和光学膜片206，发光器件202与基板201绑定，其中基板201由上述任一项所述的制备方法制成，发光器件202为Mini LED或Micro LED器件，作为背光模组中的背光源。\n\n[0081]在后续与液晶显示面板组装后，液晶显示面板通过粘结层固定在背光模组的胶框203上，背光模组中设置在基板201上的发光器件202发出的光线21，经由扩散板204、反射片205和光学膜片206后，照射到液晶显示面板上，光线21先通过液晶显示面板的下偏光片变成偏振光，液晶面板通过TFT的开关作用，给每个像素分别输入不同大小的数据信号电压，液晶分子在不同电压下旋转的状态不同，因此对偏振光的透过程度也不同，最后经由上偏光片出射的光线亮度也不同，以此来实现多灰阶的画面显示。\n\n[0082]在小尺寸的背光模组中，仅设置一块基板201，在中大尺寸的背光模组中，使用多块基板201进行拼接，例如在分辨率为7680x4320的8K产品中，液晶显示面板上一个分区通常包括多个像素，背光模组由12个基板201拼接形成，所有发光器件202形成多个背光单元，每块基板201中包括432个背光单元，每个背光单元包括4个串联的LED器件，每块基板201中的驱动电路对该基板中的发光器件202进行单独驱动，单独控制发光，单独为每个分区内的像素提供背光，相对于采用整面驱动的背光模组，分区驱动的背光模组亮度控制更加灵活，发光效果更好。\n\n[0083]本申请的背光模组中，本申请在填充焊膏之前，先形成一层防刮层，使得丝网印刷时基板的驱动电路区中形成像素驱动电路的各信号线不会被压伤，在填充焊膏后，将防刮层剥离，实现了在不影响基板性能的同时防止基板上线路被压伤。\n\n[0084]本申请的基板，除了应用在背光模组外，还可以直接应用在显示面板中，形成MiniLED显示面板或Micro LED显示面板，此时发光器件作为显示面板中的各子像素。为此，本申请还提供一种显示面板，包括上述任一实施例所述的基板。本申请的显示面板在填充焊膏之前，先形成一层防刮层，使得丝网印刷时基板的驱动电路区中形成像素驱动电路的各信号线不会被压伤，在填充焊膏后，将防刮层剥离，实现了在不影响基板性能的同时防止基板上线路被压伤。\n\n[0085]根据以上实施例可知：\n\n[0086]本申请提供一种基板和基板的制备方法，该制备方法包括：提供衬底；在衬底一侧制备发光器件绑定端子和驱动发光器件发光的像素驱动电路，发光器件绑定端子位于基板的发光器件绑定区内，像素驱动电路位于基板的驱动电路区内；在发光器件绑定端子远离衬底的一侧形成防刮层，防刮层覆盖像素驱动电路，在防刮层中图案化形成暴露发光器件绑定端子的第一过孔；通过丝网印刷法在第一过孔内填充焊膏；剥离防刮层，将发光器件通过焊膏与发光器件绑定端子绑定。本申请在填充焊膏之前，先形成一层防刮层，使得丝网印刷时基板的驱动电路区中形成像素驱动电路的各信号线不会被压伤，在填充焊膏后，将防刮层剥离，实现了在不影响基板性能的同时防止基板上线路被压伤。\n\n[0087]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0088]以上对本申请实施例所提供的一种基板和基板的制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种基板和基板的制备方法。\n\n背景技术\n\n[0002]Mini LED基板在制备过程中，需要先在Mini LED绑定端子处进行锡膏印刷，然后再将Mini LED固定在锡膏上。在现有的锡膏印刷工艺中，在基板相对的两侧各设置一把刮刀，然后两把刮刀通过钢网交替对基板进行整面印刷，然而，由于刮刀的压力过大，使得印刷时钢网与基板的接触力较大，常会造成基板上线路被压伤而出现短路，影响基板的使用效果。\n\n[0003]因此，现有的Mini LED基板存在线路易被压伤的技术问题，需要改进。\n\n发明内容\n\n[0004]本申请实施例提供一种基板和基板的制备方法，用以缓解现有的Mini LED基板中线路易被压伤的技术问题。\n\n[0005]本申请提供一种基板的制备方法，包括：\n\n[0006]提供衬底；\n\n[0007]在所述衬底一侧制备发光器件绑定端子和驱动发光器件发光的像素驱动电路，所述发光器件绑定端子位于基板的发光器件绑定区内，所述像素驱动电路位于所述基板的驱动电路区内；\n\n[0008]在所述发光器件绑定端子远离所述衬底的一侧形成防刮层，所述防刮层覆盖所述像素驱动电路，在所述防刮层中图案化形成暴露所述发光器件绑定端子的第一过孔；\n\n[0009]通过丝网印刷法在所述第一过孔内填充焊膏；\n\n[0010]剥离所述防刮层，将发光器件通过所述焊膏与所述发光器件绑定端子绑定。\n\n[0011]在本申请的基板的制备方法中，所述防刮层包括无机材料、有机复合材料、有机无机复合材料、以及熔点低于阈值的金属材料中的至少一种。\n\n[0012]在本申请的基板的制备方法中，所述防刮层包括正性光敏材料或负性光敏材料。\n\n[0013]在本申请的基板的制备方法中，所述防刮层包括光敏性聚酰亚胺。\n\n[0014]在本申请的基板的制备方法中，剥离所述防刮层的步骤，包括：采用准分子激光作为光源照射所述防刮层，将所述防刮层剥离。\n\n[0015]在本申请的基板的制备方法中，在所述发光器件绑定端子远离所述衬底的一侧依次形成反射层和防刮层的步骤，包括：形成厚度大于3微米的防刮层。\n\n[0016]在本申请的基板的制备方法中，在所述衬底一侧制备发光器件绑定端子和驱动发光器件发光的像素驱动电路的步骤，包括：在所述衬底上依次形成第一金属层、栅绝缘层、有源层和第二金属层，所述第一金属层图案化形成所述像素驱动电路中各晶体管的栅极，所述第二金属层图案化形成所述发光器件绑定端子和所述各晶体管的源漏极。\n\n[0017]在本申请的基板的制备方法中，在所述发光器件绑定端子远离所述衬底的一侧形成防刮层的步骤之前，还包括：在所述基板的芯片绑定区内形成芯片绑定端子。\n\n[0018]在本申请的基板的制备方法中，所述发光器件包括Mini LED或Micro LED。\n\n[0019]本申请还提供一种基板，采用上述任一项所述的基板的制备方法制成。\n\n[0020]有益效果：本申请提供一种基板和基板的制备方法，该制备方法包括：提供衬底；在所述衬底一侧制备发光器件绑定端子和驱动发光器件发光的像素驱动电路，所述发光器件绑定端子位于基板的发光器件绑定区内，所述像素驱动电路位于所述基板的驱动电路区内；在所述发光器件绑定端子远离所述衬底的一侧形成防刮层，所述防刮层覆盖所述像素驱动电路，在所述防刮层中图案化形成暴露所述发光器件绑定端子的第一过孔；通过丝网印刷法在所述第一过孔内填充焊膏；剥离所述防刮层，将发光器件通过所述焊膏与所述发光器件绑定端子绑定。本申请在填充焊膏之前，先形成一层防刮层，使得丝网印刷时基板的驱动电路区中形成像素驱动电路的各信号线不会被压伤，在填充焊膏后，将防刮层剥离，实现了在不影响基板性能的同时防止基板上线路被压伤。\n\n附图说明\n\n[0021]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0022]图1为本申请实施例提供的基板的制备方法的流程示意图。\n\n[0023]图2为本申请实施例提供的基板的平面结构示意图。\n\n[0024]图3为本申请实施例提供的基板的制备方法的第一阶段示意图。\n\n[0025]图4为本申请实施例提供的基板的制备方法的第二阶段示意图。\n\n[0026]图5为本申请实施例提供的基板的制备方法的第三阶段示意图。\n\n[0027]图6为本申请实施例提供的基板的制备方法的第四阶段示意图。\n\n[0028]图7为本申请实施例提供的基板的制备方法的第五阶段示意图。\n\n[0029]图8为本申请实施例提供的基板的制备方法的第六阶段示意图。\n\n[0030]图9为本申请实施例提供的基板的制备方法的第七阶段示意图。\n\n[0031]图10为本申请实施例提供的基板的制备方法的第八阶段示意图。\n\n[0032]图11为本申请实施例提供的背光模组的结构示意图。\n\n具体实施方式\n\n[0033]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0034]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0035]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0036]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0037]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0038]本申请实施例提供一种基板和基板的制备方法，用以缓解现有的Mini LED基板中线路易被压伤的技术问题。\n\n[0039]如图1所示，本申请提供一种基板的制备方法，包括：\n\n[0040]S101：提供衬底；\n\n[0041]S102：在衬底一侧制备发光器件绑定端子和驱动发光器件发光的像素驱动电路，发光器件绑定端子位于基板的发光器件绑定区内，像素驱动电路位于基板的驱动电路区内；\n\n[0042]S103：在发光器件绑定端子远离衬底的一侧形成防刮层，防刮层覆盖像素驱动电路，在防刮层中图案化形成暴露发光器件绑定端子的第一过孔；\n\n[0043]S104：通过丝网印刷法在第一过孔内填充焊膏；\n\n[0044]S105：剥离防刮层，将发光器件通过焊膏与发光器件绑定端子绑定。\n\n[0045]如图2所示，为本申请实施例提供的基板的平面结构示意图，基板包括芯片绑定区(图未示出)、驱动电路区200以及发光器件绑定区300。基板上设置有阵列排布的多个发光器件绑定区300，每个发光器件绑定区300内形成有发光器件绑定端子162，其中发光器件绑定端子162包括第一绑定部分1621和第二绑定部分1622，在形成发光器件绑定端子162后，先通过丝网印刷法透过钢网在第一绑定部分1621和第二绑定部分1622之间的第一过孔内填充焊膏，然后再将发光器件通过焊膏与发光器件绑定端子162绑定，实现与基板的固定。对应每个发光器件，均设置有对应的像素驱动电路来驱动发光器件发光，像素驱动电路设置在驱动电路区200内，驱动电路区200与发光器件绑定区300相邻，在基板中也呈阵列排布。芯片绑定区位于基板的边缘区域，芯片绑定区内设置有驱动芯片，用于给每个像素驱动电路提供电信号，以使像素驱动电路工作来驱动发光器件发光。\n\n[0046]基板自下而上包括衬底、第一金属层、栅绝缘层、有源层和第二金属层，为方便表示，图2中仅示出了第一金属层和第二金属层，其中第一金属层图案化形成了多条信号线，包括第一扫描线51、第二扫描线52、第三扫描线53、第四扫描线54以及存储电容的第一极板55，第二金属层也图案化形成多条信号线，包括第一数据线61、电源高电位信号线62、第二数据线63、感测线64、第三数据线65、电源高电位信号线66以及存储电容的第二极板67，此外，第二金属层在发光器件绑定区300内形成发光器件绑定端子162。在驱动电路区200内，第一金属层形成的各信号线与第二金属层形成的各信号线在衬底上的投影存在多处交叠区域，交叠区域的厚度相对于其他区域较大，当通过丝网印刷法透过钢网在第一绑定部分1621和第二绑定部分1622之间的第一过孔内填充焊膏时，刮刀最易压伤交叠区域的信号线。本申请通过在填充焊膏之前，先形成一层防刮层，使得丝网印刷时基板的驱动电路区中形成像素驱动电路的各信号线不会被压伤，在填充焊膏后，将防刮层剥离，实现了在不影响基板性能的同时防止基板上线路被压伤。\n\n[0047]下面结合图3至图10对该制备方法进行具体说明，其中图3和图10均为图2中沿A-A截面的膜层结构示意图。\n\n[0048]在S101中，提供衬底。如图3至图10所示，本申请实施例提供的基板，包括芯片绑定区100、驱动电路区200以及发光器件绑定区300。如图3所示，衬底11可以是柔性衬底，也可以是刚性衬底，如玻璃等，本申请对衬底11的材质不做限制。\n\n[0049]在S102中，在衬底一侧制备发光器件绑定端子和驱动发光器件发光的像素驱动电路，发光器件绑定端子位于基板的发光器件绑定区内，像素驱动电路位于基板的驱动电路区内。本实施例以基板在驱动电路区200内形成底栅结构的薄膜晶体管为例进行说明，如图4所示，在衬底11上依次制备第一金属层、栅绝缘层13、有源层14、欧姆接触层15和第二金属层16。\n\n[0050]在衬底11与第一金属层之间，通常还设置有阻隔层和缓冲层(图未示出)，阻隔层的材料一般为氧化硅(SiOx)，用于阻挡外界的杂质粒子进入衬底11和隔绝水氧，缓冲层一般采用氮化硅(SiNx)，氮化硅具有较强的离子阻隔能力和很好的水氧隔绝能力，能有效防止杂质在热制程中扩散到薄膜晶体管中。\n\n[0051]第一金属层形成在衬底11上，并在驱动电路区200内图案化形成薄膜晶体管的栅极123，在芯片绑定区100内图案化形成第一导电构件121，在发光器件绑定区300内图案化形成第二导电构件(图未示出)，第一导电构件121和第二导电构件可以是第一金属层中形成的各类信号线。第一金属层的材料包括铜、钼铜合金和钼铝合金中的至少一种。\n\n[0052]栅绝缘层13形成在第一金属层上，栅绝缘层13的材料通常为氮化硅(SiNx)和氧化硅(SiOx)中的至少一种，并且可以是单层或多层结构。\n\n[0053]有源层14形成在栅绝缘层13上，有源层14可以是非晶硅材料、多晶硅(a-Si)材料或金属氧化物半导体材料等，其中金属氧化物半导体可以包括铟锡氧化物、铟镓锌氧化物、铟锌锡氧化物、铟镓锌锡氧化物中的至少一种。\n\n[0054]欧姆接触层15形成在有源层14上，第二金属层16形成在欧姆接触层15上。第二金属层16的材料包括铜、钼铜合金和钼铝合金中的至少一种。\n\n[0055]如图5所示，在形成第二金属层16后，对有源层14、欧姆接触层15和第二金属层16图案化。\n\n[0056]有源层14包括分别形成在芯片绑定区100、驱动电路区200和发光器件绑定区300中的三部分，其中位于驱动电路区200中的部分包括通过掺杂N型杂质离子或P型杂质离子而形成的源极区域和漏极区域、以及位于源极区域和漏极区域之间的沟道区域。\n\n[0057]欧姆接触层15包括分别形成在芯片绑定区100、驱动电路区200和发光器件绑定区300中的三部分，其中在驱动电路区200的部分，分别形成在有源层14的源极区域和漏极区域上。\n\n[0058]第二金属层16在驱动电路区200内图案化形成薄膜晶体管的源极163和漏极164，在芯片绑定区100内图案化形成芯片绑定端子161，在发光器件绑定区300内图案化形成发光器件绑定端子162，源极163和漏极164分别与有源层14的源极区域和漏极区域连接，芯片绑定端子161通过过孔与第一导电构件121连接。\n\n[0059]通过上述步骤，在基板的芯片绑定区100内形成了芯片绑定端子161，在基板的驱动电路区200内形成了驱动电路，在基板的发光器件绑定区300内形成了发光器件绑定端子162。\n\n[0060]上述实施例以底栅结构的薄膜晶体管进行说明，但不限于此，也可以形成顶栅结构的薄膜晶体管，此时，有源层14形成在衬底11与第一金属层之间。\n\n[0061]如图6所示，钝化层17形成在第二金属层上，且为整层设置，钝化层17的材料通常为氮化硅(SiNx)和氧化硅(SiOx)中的至少一种，并且可以是单层或多层结构。在钝化层17形成后，在芯片绑定区100和发光器件绑定区300内均形成有过孔。\n\n[0062]如图7所示，在钝化层17上形成有电极层，图案化形成电极18，电极18位于芯片绑定区100内，通过钝化层17中过孔与芯片绑定端子161连接。\n\n[0063]在S103中，在发光器件绑定端子远离衬底的一侧形成防刮层，防刮层覆盖像素驱动电路，在防刮层中图案化形成暴露发光器件绑定端子的第一过孔。\n\n[0064]如图8所示，防刮层20的材料包括无机材料、有机复合材料、有机无机复合材料、以及熔点低于阈值的金属材料中的至少一种，可以是这些材料形成的单层，也可以是其中两种或多种材料形成的复合膜层。防刮层20对应基板的驱动电路区200设置，驱动电路区200内形成有像素驱动电路，包括第一金属层和第二金属层16图案化形成的交叠设置的多条信号线，此外，防刮层20也可以为整层设置的结构，延伸覆盖整个衬底11所在的区域，仅在发光器件绑定区300内存在第一过孔，其他区域都被防刮层20覆盖保护。防刮层20的厚度大于3微米。\n\n[0065]在一种实施例中，防刮层20包括正性光敏材料或负性光敏材料。当防刮层20为正性光敏材料，在形成第一过孔时，对发光器件绑定端子162位置进行曝光，其他部分不曝光，然后显影时对应发光器件绑定端子162所在位置形成第一过孔，当防刮层20为负性光敏材料，在形成第一过孔时，对发光器件绑定端子162位置不曝光，其他部分进行曝光，然后同样地显影时对应发光器件绑定端子162所在位置形成第一过孔。\n\n[0066]防刮层20的材料优选为光敏性聚酰亚胺，则在显影去除第一过孔内的材料时，可采用多种不同的显影液进行去除。\n\n[0067]在一种实施例中，在47摄氏度下，用质量分数比为1:1:1的乙醇胺、N-甲基吡咯烷酮和水混合形成显影液，对曝光后的防刮层20进行2.5分钟的显影，形成第一过孔。\n\n[0068]在一种实施例中，在47摄氏度下，用质量分数比为4:1:1的乙醇胺、N-甲基吡咯烷酮和水混合形成显影液，对曝光后的防刮层20进行1.5分钟的显影，形成第一过孔。\n\n[0069]在一种实施例中，用浓度为10％的四甲基氢氧化铵溶液，对曝光后的防刮层20进行18分钟的显影，形成第一过孔。\n\n[0070]在一种实施例中，在发光器件绑定端子162远离衬底11的一侧，先形成反射层19，然后再形成防刮层20，然后对反射层19和防刮层20图案化形成第一过孔，第一过孔位于发光器件绑定区300内，且将发光器件绑定端子162暴露出。在形成第一过孔时，先形成反射层19和防刮层20，再同时在该区域形成第一过孔。此外，钝化层17在该位置的过孔，也可以是与反射层19和防刮层20一起形成。\n\n[0071]在后续与发光器件绑定后，发光器件发出的光遇到其他部件后会发射回来，由于基板设置有反射层19，反射回的光在照射到反射层19上时，又会被反射回去，因此提高了光线的利用率。反射层19采用反射率高的材料制成。\n\n[0072]在S104中，通过丝网印刷法在第一过孔内填充焊膏。\n\n[0073]如图9所示，第一过孔内填充有焊膏30，具体可以是锡膏。在填充时，在基板上先设置一钢网，钢网的网格与第一过孔对应，然后在钢网相对的两侧各设置一刮刀，两刮刀来回交替向钢网的另一侧进行印刷工作，带动焊膏30也从基板的一侧从另一侧移动，在焊膏30被刮刀带动移动到第一过孔处时，焊膏30会从钢网上对应的网格处掉落至第一过孔中，最终使得焊膏30会填充至第一过孔中。\n\n[0074]在S105中，剥离防刮层，将发光器件通过焊膏与发光器件绑定端子绑定。\n\n[0075]如图10所示，在填充好焊膏30后，将防刮层20进行剥离。剥离时，可以采用准分子激光作为光源照射防刮层20，将防刮层20剥离，也可以采用干刻工艺将防刮层20刻蚀去除，具体去除方法根据材料的特性而定，凡能对防刮层20进行剥离的工艺均在本申请的保护范围内。\n\n[0076]在采用准分子激光照射剥离时，由于准分子激光具有高能量密度，在照射防刮层20时，激光在基板其他膜层中损失较少，在到达防刮层20与反射层19的交界处时，被防刮层20吸收，使防刮层20温度升高发生热分解，从而达到防刮层20从基板其他膜层上剥离的目的。此外，由于反射层19的高反射性，激光会被反射层19反射，因此进一步增强了激光剥离的效果，增加了产品信赖性。以防刮层20为聚酰亚胺为例，采用准分子激光作为光源照射防刮层20时，可以采用波长为308纳米的准分子激光作为光源，准分子激光的能量密度阈值为160mj/cm2，此种设置既能保证防刮层20可以完全与其他膜层剥离，又不会因能量过高对其他膜层造成损伤。\n\n[0077]在防刮层20去除后，将发光器件40通过焊膏30与发光器件绑定端子162绑定，发光器件包括Mini LED或Micro LED器件。绑定完成后将基板暂存一段时间后，再进行回流焊接等其他工序，完成基板的制作。\n\n[0078]本申请的制备方法中，在填充焊膏之前，先形成一层防刮层，形成保护，使得丝网印刷时基板的驱动电路区中的各线路不会被压伤，在填充焊膏后，将防刮层剥离，使得反射层暴露出来，又不会影响基板的反射率，因此实现了对防刮和降低反射率的兼顾。\n\n[0079]本申请还提供一种基板，采用上述任一项所述的制备方法制成。通过在填充焊膏之前，先形成一层防刮层，使得丝网印刷时基板的驱动电路区中形成像素驱动电路的各信号线不会被压伤，在填充焊膏后，将防刮层剥离，实现了在不影响基板性能的同时防止基板上线路被压伤。\n\n[0080]如图11所示，本申请还提供一种背光模组，该背光模组包括基板201、发光器件202、胶框203、扩散板204、反射片205和光学膜片206，发光器件202与基板201绑定，其中基板201由上述任一项所述的制备方法制成，发光器件202为Mini LED或Micro LED器件，作为背光模组中的背光源。\n\n[0081]在后续与液晶显示面板组装后，液晶显示面板通过粘结层固定在背光模组的胶框203上，背光模组中设置在基板201上的发光器件202发出的光线21，经由扩散板204、反射片205和光学膜片206后，照射到液晶显示面板上，光线21先通过液晶显示面板的下偏光片变成偏振光，液晶面板通过TFT的开关作用，给每个像素分别输入不同大小的数据信号电压，液晶分子在不同电压下旋转的状态不同，因此对偏振光的透过程度也不同，最后经由上偏光片出射的光线亮度也不同，以此来实现多灰阶的画面显示。\n\n[0082]在小尺寸的背光模组中，仅设置一块基板201，在中大尺寸的背光模组中，使用多块基板201进行拼接，例如在分辨率为7680x4320的8K产品中，液晶显示面板上一个分区通常包括多个像素，背光模组由12个基板201拼接形成，所有发光器件202形成多个背光单元，每块基板201中包括432个背光单元，每个背光单元包括4个串联的LED器件，每块基板201中的驱动电路对该基板中的发光器件202进行单独驱动，单独控制发光，单独为每个分区内的像素提供背光，相对于采用整面驱动的背光模组，分区驱动的背光模组亮度控制更加灵活，发光效果更好。\n\n[0083]本申请的背光模组中，本申请在填充焊膏之前，先形成一层防刮层，使得丝网印刷时基板的驱动电路区中形成像素驱动电路的各信号线不会被压伤，在填充焊膏后，将防刮层剥离，实现了在不影响基板性能的同时防止基板上线路被压伤。\n\n[0084]本申请的基板，除了应用在背光模组外，还可以直接应用在显示面板中，形成MiniLED显示面板或Micro LED显示面板，此时发光器件作为显示面板中的各子像素。为此，本申请还提供一种显示面板，包括上述任一实施例所述的基板。本申请的显示面板在填充焊膏之前，先形成一层防刮层，使得丝网印刷时基板的驱动电路区中形成像素驱动电路的各信号线不会被压伤，在填充焊膏后，将防刮层剥离，实现了在不影响基板性能的同时防止基板上线路被压伤。\n\n[0085]根据以上实施例可知：\n\n[0086]本申请提供一种基板和基板的制备方法，该制备方法包括：提供衬底；在衬底一侧制备发光器件绑定端子和驱动发光器件发光的像素驱动电路，发光器件绑定端子位于基板的发光器件绑定区内，像素驱动电路位于基板的驱动电路区内；在发光器件绑定端子远离衬底的一侧形成防刮层，防刮层覆盖像素驱动电路，在防刮层中图案化形成暴露发光器件绑定端子的第一过孔；通过丝网印刷法在第一过孔内填充焊膏；剥离防刮层，将发光器件通过焊膏与发光器件绑定端子绑定。本申请在填充焊膏之前，先形成一层防刮层，使得丝网印刷时基板的驱动电路区中形成像素驱动电路的各信号线不会被压伤，在填充焊膏后，将防刮层剥离，实现了在不影响基板性能的同时防止基板上线路被压伤。\n\n[0087]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0088]以上对本申请实施例所提供的一种基板和基板的制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10859, 23913, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示面板。\n\n背景技术\n\n[0002]目前LED显示屏多采用基于印刷电路板(PCB)和LED灯珠的模组设计结构，采用被动驱动方式(PM)动态扫描的驱动方式，但是该结构无法在成本效益低的情况下进一步缩小LED之间的间距，提升性能；主要原因是，间距越小，PCB的正面需要焊接更多小尺寸的灯珠，而PCB的背面就需要更多的驱动IC，最终导致背面的驱动IC无法排列，若缩小驱动IC的体积，这就会增加成本。\n\n[0003]随着当前Mini LED及Micro LED和大尺寸触控的快速发展，急需要具有主动发光的大尺寸触控显示。\n\n发明内容\n\n[0004]本发明一目的是提供一种显示面板，以主动驱动发光的形式将Mini LED、MicroLED结合的显示面板。\n\n[0005]本发明提供一种显示面板，包括：玻璃基板，具有显示区以及非显示区；薄膜晶体管电路层，设于所述玻璃基板的显示区上，所述薄膜晶体管电路层中包括像素驱动电路，所述像素驱动电路为有源矩阵主动驱动；挡光层，设于所述薄膜晶体管电路层上，所述挡光层包括对应子像素的通孔；发光单元，设于所述通孔中且连接所述薄膜晶体管电路层；封装层，设于所述挡光层上且覆盖所述发光单元；PCB板，设于所述玻璃基板的下方，所述PCB板通过覆晶薄膜连接于所述玻璃基板的上侧。\n\n[0006]进一步地，所述发光单元包括Mini LED或Micro LED。\n\n[0007]进一步地，所述显示面板还包括：绑定端子，设于所述玻璃基板的非显示区上，所述覆晶薄膜通过所述绑定端子所述玻璃基板的上侧。\n\n[0008]进一步地，所述覆晶薄膜包括：上横向部，设于所述绑定端子与所述挡光层之间；垂直部，一端连接所述上横向部且贴附于所述玻璃基板的右侧；下横向部，平行于所述上横向部且连接所述垂直部的另一端，所述PCB板设于所述下横向部上。\n\n[0009]所述绑定端子包括：第一上横向部，设于所述玻璃基板的非显示区与所述挡光层之间；第一垂直部，设于所述玻璃基板的右侧且一端连接所述第一上横向部。\n\n[0010]进一步地，所述覆晶薄膜包括：第二垂直部，贴附于所述第一垂直部并向上延伸至所述挡光层的下表面；第二下横向部，垂直连接所述第二垂直部的一端，所述PCB板设于所述第二下横向部上。\n\n[0011]进一步地，所述绑定端子还包括：第一下横向部，平行于所述第一上横向部且连接所述第一垂直部的另一端；所述覆晶薄膜贴附于所述第一下横向部的下侧，所述PCB板设于所述覆晶薄膜上。\n\n[0012]进一步地，所述覆晶薄膜包括：第二上横向部，贴附于所述第一下横向部的下侧；第二垂直部，一端连接所述第二上横向部；第二下横向部，平行于所述第二上横向部且连接所述第二垂直部的另一端，所述PCB板设于所述第二下横向部上；其中，所述覆晶薄膜的图案形状包括Z字形。\n\n[0013]进一步地，所述像素驱动电路包括：第一薄膜晶体管，所述第一薄膜晶体管的栅极连接扫描线，所述第一薄膜晶体管的源极连接数据线，所述第一薄膜晶体管的漏极连接第一节点；第二薄膜晶体管，所述第二薄膜晶体管的栅极连接所述第节点，所述第二薄膜晶体管的源极连接第二节点，所述第二薄膜晶体管的漏极连接高电压源；第三薄膜晶体管，所述第三薄膜晶体管的栅极连接感应线，所述第三薄膜晶体管的源极连接所述第二节点，所述第二薄膜晶体管的漏极连接侦测线；电容，所述电容的一端连接所述第一节点，另一端连接所述第二节点；以及LED，所述LED的阳极连接所述第二节点，所述LED的阴极接地。\n\n[0014]进一步地，所述非显示区的绑定区为单侧绑定或双侧绑定。\n\n[0015]本发明的有益效果是：本发明提供一种显示面板，其采用玻璃基板为底层板材，通过在玻璃基板上设置薄膜晶体管电路层，并在薄膜晶体管电路层上焊接Mini LED或MicroLED发光单元。本发明的像素驱动电路采用有源矩阵主动驱动以及外补驱动架构。最后通过覆晶薄膜连接玻璃基板背面的PCB板。\n\n附图说明\n\n[0016]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0017]图1为本发明实施例1提供的显示面板的结构示意图。\n\n[0018]图2为本发明实施例1提供的像素驱动电路的示意图。\n\n[0019]图3为本发明实施例1提供的单侧绑定的示意图。\n\n[0020]图4为本发明实施例1提供的双侧绑定的示意图。\n\n[0021]图5为本发明实施例2提供的显示面板的结构示意图。\n\n[0022]图6为本发明实施例3提供的显示面板的结构示意图。\n\n[0023]显示面板100、100a、100b；\n\n[0024]玻璃基板101；薄膜晶体管电路层102；挡光层103、103a；\n\n[0025]发光单元104；封装层105；绑定端子106、106a、106b；\n\n[0026]覆晶薄膜107、107a、107b；PCB板108、108a、108b；显示区110；\n\n[0027]非显示区120；上横向部1071；垂直部1072；\n\n[0028]下横向部1073；第一上横向部1061a、1061b；第一垂直部1062a、1062b；\n\n[0029]第二垂直部1072a；第二下横向部1073a；第一下横向部1063b；\n\n[0030]第二上横向部1071b；第二垂直部1072b；第二下横向部1073b。\n\n具体实施方式\n\n[0031]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0032]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0033]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0034]如图1所示，本发明实施例1提供一种显示面板100，包括：玻璃基板101、薄膜晶体管电路层102、挡光层103、发光单元104、封装层105、绑定端子106、覆晶薄膜107以及PCB板108。\n\n[0035]所述玻璃基板101具有显示区110以及非显示区120。\n\n[0036]所述薄膜晶体管电路层102设于所述玻璃基板101的显示区110上，所述薄膜晶体管电路层102中包括像素驱动电路，所述像素驱动电路为有源矩阵主动驱动。\n\n[0037]所述挡光层103设于所述薄膜晶体管电路层102上。所述挡光层103的材料包括黑油或BM。所述挡光层103包括对应显示面板子像素的通孔1031。\n\n[0038]所述发光单元104设于所述通孔1031中且连接所述薄膜晶体管电路层102。\n\n[0039]所述封装层105设于所述挡光层103上且覆盖所述发光单元104。\n\n[0040]PCB板108，设于所述玻璃基板101的下方，所述PCB板108通过所述覆晶薄膜107连接于所述玻璃基板101的上侧，具体连接的位置在所述非显示区120。\n\n[0041]所述发光单元104包括Mini LED或Micro LED。所述发光单元104对应的挡光层103区域进行开窗设计(即开设通孔1031)，并将所述发光单元104焊接于所述薄膜晶体管电路层102上。\n\n[0042]所述绑定端子106设于所述玻璃基板101的非显示区120上，所述覆晶薄膜107通过所述绑定端子106所述玻璃基板101。\n\n[0043]所述覆晶薄膜107包括：上横向部1071、垂直部1072以及下横向部1073。\n\n[0044]所述上横向部1071设于所述绑定端子106与所述挡光层103之间。\n\n[0045]所述垂直部1072一端连接所述上横向部1071且贴附于所述玻璃基板101的右侧。\n\n[0046]所述下横向部1073平行于所述上横向部1071且连接所述垂直部1072的另一端，所述PCB板108设于所述下横向部1073上。\n\n[0047]如图2所示，所述像素驱动电路(3T1C)包括：第一薄膜晶体管T1、第二薄膜晶体管T2、第三薄膜晶体管T3、电容Cs以及LED。\n\n[0048]所述第一薄膜晶体管T1的栅极连接扫描线Scan，所述第一薄膜晶体管T1的源极连接数据线Data，所述第一薄膜晶体管T1的漏极连接第一节点G。\n\n[0049]所述第二薄膜晶体管T2的栅极连接所述第一节点G，所述第二薄膜晶体管T2的源极连接第二节点S，所述第二薄膜晶体管T2的漏极连接高电压源VDD。\n\n[0050]所述第三薄膜晶体管T3的栅极连接感应线Sense，所述第三薄膜晶体管T3的源极连接所述第二节点S，所述第二薄膜晶体管T3的漏极连接侦测线Vref。\n\n[0051]所述电容Cs的一端连接所述第一节点G，另一端连接所述第二节点S；\n\n[0052]所述LED的阳极连接所述第二节点，所述LED的阴极接地。\n\n[0053]在实施例1中，所述非显示区120的绑定区为单侧绑定(如图3所示)或双侧绑定(如图4所示)，实施例1采用的覆晶薄膜107(COF)窄绑的结构。\n\n[0054]本发明提供实施例1一种显示面板100，其采用玻璃基板101为底层板材，通过在玻璃基板101上设置薄膜晶体管电路层102，并在薄膜晶体管电路层102上焊接Mini LED或Micro LED发光单元104。本发明的像素驱动电路采用有源矩阵主动驱动以及外补驱动架构。最后通过覆晶薄膜107连接玻璃基板101背面的PCB板108。\n\n[0055]所述外补驱动架构为像素补偿电路，连接所述侦测线Vref。\n\n[0056]如图5所示，本发明实施例2提供一种显示面板100a，与实施例1不同之处在于，显示面板100a采用COF侧绑定的结构。\n\n[0057]具体地，所述绑定端子106a包括：第一上横向部1061a以及第一垂直部1061a。\n\n[0058]所述第一上横向部1061a设于所述玻璃基板101的非显示区120a与所述挡光层103a之间。\n\n[0059]所述第一垂直部1061a设于所述玻璃基板101a的右侧且一端连接所述第一上横向部1061a。\n\n[0060]所述覆晶薄膜107a包括：第二垂直部1072a以及第二下横向部1073a。\n\n[0061]所述第二垂直部1072a贴附于所述第一垂直部1061a并向上延伸至所述挡光层103a的下表面。\n\n[0062]所述第二下横向部1073a垂直连接所述第二垂直部1072a的一端，所述PCB板108a设于所述下第二下横向部1073a上。\n\n[0063]如图6所示，本发明实施例3提供一种显示面板100b，与实施例2不同之处在于，显示面板100b采用COF背绑定的结构。\n\n[0064]具体地，所述绑定端子106b还包括：第一下横向部1063b。\n\n[0065]所述第一下横向部1063b平行于所述第一上横向部1061b且连接所述第一垂直部1062b的另一端。\n\n[0066]所述覆晶薄膜107贴附于所述第一下横向部1063b的下侧，所述PCB板108b设于所述覆晶薄膜107b上。\n\n[0067]具体地，所述覆晶薄膜107b包括：第二上横向部1071b、第二垂直部1072b以及第二下横向部1073b。\n\n[0068]所述第二上横向部1071b贴附于所述第一下横向部1063b的下侧。\n\n[0069]所述第二垂直部1072b一端连接所述第二上横向部1071b。\n\n[0070]所述第二下横向部1073b平行于所述第二上横向部1071b且连接所述第二垂直部1072b的另一端，所述PCB板108b设于所述第二下横向部1073b上；\n\n[0071]其中，所述覆晶薄膜107b的图案形状包括Z字形图案设计。\n\n[0072]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0073]以上对本发明进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示面板。\n\n背景技术\n\n[0002]目前LED显示屏多采用基于印刷电路板(PCB)和LED灯珠的模组设计结构，采用被动驱动方式(PM)动态扫描的驱动方式，但是该结构无法在成本效益低的情况下进一步缩小LED之间的间距，提升性能；主要原因是，间距越小，PCB的正面需要焊接更多小尺寸的灯珠，而PCB的背面就需要更多的驱动IC，最终导致背面的驱动IC无法排列，若缩小驱动IC的体积，这就会增加成本。\n\n[0003]随着当前Mini LED及Micro LED和大尺寸触控的快速发展，急需要具有主动发光的大尺寸触控显示。\n\n发明内容\n\n[0004]本发明一目的是提供一种显示面板，以主动驱动发光的形式将Mini LED、MicroLED结合的显示面板。\n\n[0005]本发明提供一种显示面板，包括：玻璃基板，具有显示区以及非显示区；薄膜晶体管电路层，设于所述玻璃基板的显示区上，所述薄膜晶体管电路层中包括像素驱动电路，所述像素驱动电路为有源矩阵主动驱动；挡光层，设于所述薄膜晶体管电路层上，所述挡光层包括对应子像素的通孔；发光单元，设于所述通孔中且连接所述薄膜晶体管电路层；封装层，设于所述挡光层上且覆盖所述发光单元；PCB板，设于所述玻璃基板的下方，所述PCB板通过覆晶薄膜连接于所述玻璃基板的上侧。\n\n[0006]进一步地，所述发光单元包括Mini LED或Micro LED。\n\n[0007]进一步地，所述显示面板还包括：绑定端子，设于所述玻璃基板的非显示区上，所述覆晶薄膜通过所述绑定端子所述玻璃基板的上侧。\n\n[0008]进一步地，所述覆晶薄膜包括：上横向部，设于所述绑定端子与所述挡光层之间；垂直部，一端连接所述上横向部且贴附于所述玻璃基板的右侧；下横向部，平行于所述上横向部且连接所述垂直部的另一端，所述PCB板设于所述下横向部上。\n\n[0009]所述绑定端子包括：第一上横向部，设于所述玻璃基板的非显示区与所述挡光层之间；第一垂直部，设于所述玻璃基板的右侧且一端连接所述第一上横向部。\n\n[0010]进一步地，所述覆晶薄膜包括：第二垂直部，贴附于所述第一垂直部并向上延伸至所述挡光层的下表面；第二下横向部，垂直连接所述第二垂直部的一端，所述PCB板设于所述第二下横向部上。\n\n[0011]进一步地，所述绑定端子还包括：第一下横向部，平行于所述第一上横向部且连接所述第一垂直部的另一端；所述覆晶薄膜贴附于所述第一下横向部的下侧，所述PCB板设于所述覆晶薄膜上。\n\n[0012]进一步地，所述覆晶薄膜包括：第二上横向部，贴附于所述第一下横向部的下侧；第二垂直部，一端连接所述第二上横向部；第二下横向部，平行于所述第二上横向部且连接所述第二垂直部的另一端，所述PCB板设于所述第二下横向部上；其中，所述覆晶薄膜的图案形状包括Z字形。\n\n[0013]进一步地，所述像素驱动电路包括：第一薄膜晶体管，所述第一薄膜晶体管的栅极连接扫描线，所述第一薄膜晶体管的源极连接数据线，所述第一薄膜晶体管的漏极连接第一节点；第二薄膜晶体管，所述第二薄膜晶体管的栅极连接所述第节点，所述第二薄膜晶体管的源极连接第二节点，所述第二薄膜晶体管的漏极连接高电压源；第三薄膜晶体管，所述第三薄膜晶体管的栅极连接感应线，所述第三薄膜晶体管的源极连接所述第二节点，所述第二薄膜晶体管的漏极连接侦测线；电容，所述电容的一端连接所述第一节点，另一端连接所述第二节点；以及LED，所述LED的阳极连接所述第二节点，所述LED的阴极接地。\n\n[0014]进一步地，所述非显示区的绑定区为单侧绑定或双侧绑定。\n\n[0015]本发明的有益效果是：本发明提供一种显示面板，其采用玻璃基板为底层板材，通过在玻璃基板上设置薄膜晶体管电路层，并在薄膜晶体管电路层上焊接Mini LED或MicroLED发光单元。本发明的像素驱动电路采用有源矩阵主动驱动以及外补驱动架构。最后通过覆晶薄膜连接玻璃基板背面的PCB板。\n\n附图说明\n\n[0016]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0017]图1为本发明实施例1提供的显示面板的结构示意图。\n\n[0018]图2为本发明实施例1提供的像素驱动电路的示意图。\n\n[0019]图3为本发明实施例1提供的单侧绑定的示意图。\n\n[0020]图4为本发明实施例1提供的双侧绑定的示意图。\n\n[0021]图5为本发明实施例2提供的显示面板的结构示意图。\n\n[0022]图6为本发明实施例3提供的显示面板的结构示意图。\n\n[0023]显示面板100、100a、100b；\n\n[0024]玻璃基板101；薄膜晶体管电路层102；挡光层103、103a；\n\n[0025]发光单元104；封装层105；绑定端子106、106a、106b；\n\n[0026]覆晶薄膜107、107a、107b；PCB板108、108a、108b；显示区110；\n\n[0027]非显示区120；上横向部1071；垂直部1072；\n\n[0028]下横向部1073；第一上横向部1061a、1061b；第一垂直部1062a、1062b；\n\n[0029]第二垂直部1072a；第二下横向部1073a；第一下横向部1063b；\n\n[0030]第二上横向部1071b；第二垂直部1072b；第二下横向部1073b。\n\n具体实施方式\n\n[0031]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0032]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0033]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0034]如图1所示，本发明实施例1提供一种显示面板100，包括：玻璃基板101、薄膜晶体管电路层102、挡光层103、发光单元104、封装层105、绑定端子106、覆晶薄膜107以及PCB板108。\n\n[0035]所述玻璃基板101具有显示区110以及非显示区120。\n\n[0036]所述薄膜晶体管电路层102设于所述玻璃基板101的显示区110上，所述薄膜晶体管电路层102中包括像素驱动电路，所述像素驱动电路为有源矩阵主动驱动。\n\n[0037]所述挡光层103设于所述薄膜晶体管电路层102上。所述挡光层103的材料包括黑油或BM。所述挡光层103包括对应显示面板子像素的通孔1031。\n\n[0038]所述发光单元104设于所述通孔1031中且连接所述薄膜晶体管电路层102。\n\n[0039]所述封装层105设于所述挡光层103上且覆盖所述发光单元104。\n\n[0040]PCB板108，设于所述玻璃基板101的下方，所述PCB板108通过所述覆晶薄膜107连接于所述玻璃基板101的上侧，具体连接的位置在所述非显示区120。\n\n[0041]所述发光单元104包括Mini LED或Micro LED。所述发光单元104对应的挡光层103区域进行开窗设计(即开设通孔1031)，并将所述发光单元104焊接于所述薄膜晶体管电路层102上。\n\n[0042]所述绑定端子106设于所述玻璃基板101的非显示区120上，所述覆晶薄膜107通过所述绑定端子106所述玻璃基板101。\n\n[0043]所述覆晶薄膜107包括：上横向部1071、垂直部1072以及下横向部1073。\n\n[0044]所述上横向部1071设于所述绑定端子106与所述挡光层103之间。\n\n[0045]所述垂直部1072一端连接所述上横向部1071且贴附于所述玻璃基板101的右侧。\n\n[0046]所述下横向部1073平行于所述上横向部1071且连接所述垂直部1072的另一端，所述PCB板108设于所述下横向部1073上。\n\n[0047]如图2所示，所述像素驱动电路(3T1C)包括：第一薄膜晶体管T1、第二薄膜晶体管T2、第三薄膜晶体管T3、电容Cs以及LED。\n\n[0048]所述第一薄膜晶体管T1的栅极连接扫描线Scan，所述第一薄膜晶体管T1的源极连接数据线Data，所述第一薄膜晶体管T1的漏极连接第一节点G。\n\n[0049]所述第二薄膜晶体管T2的栅极连接所述第一节点G，所述第二薄膜晶体管T2的源极连接第二节点S，所述第二薄膜晶体管T2的漏极连接高电压源VDD。\n\n[0050]所述第三薄膜晶体管T3的栅极连接感应线Sense，所述第三薄膜晶体管T3的源极连接所述第二节点S，所述第二薄膜晶体管T3的漏极连接侦测线Vref。\n\n[0051]所述电容Cs的一端连接所述第一节点G，另一端连接所述第二节点S；\n\n[0052]所述LED的阳极连接所述第二节点，所述LED的阴极接地。\n\n[0053]在实施例1中，所述非显示区120的绑定区为单侧绑定(如图3所示)或双侧绑定(如图4所示)，实施例1采用的覆晶薄膜107(COF)窄绑的结构。\n\n[0054]本发明提供实施例1一种显示面板100，其采用玻璃基板101为底层板材，通过在玻璃基板101上设置薄膜晶体管电路层102，并在薄膜晶体管电路层102上焊接Mini LED或Micro LED发光单元104。本发明的像素驱动电路采用有源矩阵主动驱动以及外补驱动架构。最后通过覆晶薄膜107连接玻璃基板101背面的PCB板108。\n\n[0055]所述外补驱动架构为像素补偿电路，连接所述侦测线Vref。\n\n[0056]如图5所示，本发明实施例2提供一种显示面板100a，与实施例1不同之处在于，显示面板100a采用COF侧绑定的结构。\n\n[0057]具体地，所述绑定端子106a包括：第一上横向部1061a以及第一垂直部1061a。\n\n[0058]所述第一上横向部1061a设于所述玻璃基板101的非显示区120a与所述挡光层103a之间。\n\n[0059]所述第一垂直部1061a设于所述玻璃基板101a的右侧且一端连接所述第一上横向部1061a。\n\n[0060]所述覆晶薄膜107a包括：第二垂直部1072a以及第二下横向部1073a。\n\n[0061]所述第二垂直部1072a贴附于所述第一垂直部1061a并向上延伸至所述挡光层103a的下表面。\n\n[0062]所述第二下横向部1073a垂直连接所述第二垂直部1072a的一端，所述PCB板108a设于所述下第二下横向部1073a上。\n\n[0063]如图6所示，本发明实施例3提供一种显示面板100b，与实施例2不同之处在于，显示面板100b采用COF背绑定的结构。\n\n[0064]具体地，所述绑定端子106b还包括：第一下横向部1063b。\n\n[0065]所述第一下横向部1063b平行于所述第一上横向部1061b且连接所述第一垂直部1062b的另一端。\n\n[0066]所述覆晶薄膜107贴附于所述第一下横向部1063b的下侧，所述PCB板108b设于所述覆晶薄膜107b上。\n\n[0067]具体地，所述覆晶薄膜107b包括：第二上横向部1071b、第二垂直部1072b以及第二下横向部1073b。\n\n[0068]所述第二上横向部1071b贴附于所述第一下横向部1063b的下侧。\n\n[0069]所述第二垂直部1072b一端连接所述第二上横向部1071b。\n\n[0070]所述第二下横向部1073b平行于所述第二上横向部1071b且连接所述第二垂直部1072b的另一端，所述PCB板108b设于所述第二下横向部1073b上；\n\n[0071]其中，所述覆晶薄膜107b的图案形状包括Z字形图案设计。\n\n[0072]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0073]以上对本发明进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10860, 23914, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种曲面显示面板。\n\n背景技术\n\n[0002]曲面显示面板是指面板带有弧度的显示器设备，提升了用户视觉体验上的宽阔感，给人更广的视野，弯曲的边缘以及圆弧的画面能够更贴近用户与屏幕中央位置，实现基本相同的观赏角度，同时曲面屏可以让人体验到更好观影效果。\n\n[0003]柔性大尺寸的曲面显示面板具有大弯曲的角度、大的曲率以及无边框特征，尤其双曲面屏的屏幕一般设计成一个凹陷或外凸的造型，在侧面也可以显示和触摸，曲面屏的设计在当下颇为超前，具有圆润手感、精致外观、视角广阔、屏占比大等优点。当柔性大尺寸的曲面显示面板的弯曲的角度和曲率越大时，盖板层、柔性基板、驱动电路层、发光器件层在弯折的弧面曲率的变化，各处上承受的应力不均匀，容易发生应力集中，造成弯折段的薄膜晶体管、与薄膜晶体管相连金属走线、OLED发光器件层产生应变不同，导致不同膜层界面处开裂，严重影响显示效果。\n\n[0004]综上所述，现有技术中柔性大尺寸曲面显示面板的弯折位置中各膜层弯折曲率和弯折半径越大，易发生应力集中和应力不均匀，导致各膜层容易开裂的技术问题，需要改进。\n\n发明内容\n\n[0005]本申请实施例提供一种曲面显示面板，能够解决现有技术中柔性大尺寸曲面显示面板的弯折位置中各膜层弯折曲率和弯折半径越大，易发生应力集中和应力不均匀，导致各膜层容易开裂的技术问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本申请实施例提供一种曲面显示面板，包括曲面盖板、设于所述曲面盖板内侧的柔性衬底以及设于所述柔性衬底上的柔性显示面板；其中，所述曲面盖板包括至少一侧的弯折部，所述弯折部向所述曲面盖板内弯曲，所述柔性衬底对应所述弯折部设置有曲面段，所述曲面段设置有镂空图案。\n\n[0008]根据本申请一优选实施例，所述柔性衬底包括相贴合设置的第一柔性层、第一缓冲层、第二柔性层以及第二缓冲层，其中，所述第一柔性层和所述第二柔性层均为聚酰亚胺，所述第一缓冲层和所述第二缓冲层为弹塑性有机材料，所述镂空图案由外向内至少贯穿所述第一柔性层。\n\n[0009]根据本申请一优选实施例，所述镂空图案呈列分布，且任意相邻的两列的所述镂空图案错位设置。\n\n[0010]根据本申请一优选实施例，所述镂空图案为长条形，自所述柔性衬底中心逐渐到所述曲面段边缘的每列所述镂空图案的宽度呈递增趋势，且所述镂空图案的长度不变。\n\n[0011]根据本申请一优选实施例，任意相邻的两列所述镂空图案之间设置有一片整块连接体，每列中任意两个所述镂空图案之间设置间隔连接块，且所述曲面段边缘设置有未刻蚀所述镂空图案的保护层。\n\n[0012]根据本申请一优选实施例，所述曲面盖板的底部为平面部，所述弯折部截面呈向上突起弧形，所述平面部与所述突起弧形形成凹槽状。\n\n[0013]根据本申请一优选实施例，所述弯折部、所述弯折部与所述平面部接触部位均呈平滑结构，所述平滑结构为圆弧或斜面。\n\n[0014]根据本申请一优选实施例，所述柔性衬底贴合于所述平面部，并延伸出所述平面部的预设部分。\n\n[0015]根据本申请一优选实施例，所述柔性显示面板包括第一显示区和位于所述第一显示区外围的第二显示区，其中，所述第一显示区和所述第二显示区不在同一个平面，所述第一显示区为平面显示或曲面显示，所述第二显示区为曲面显示。\n\n[0016]根据本申请一优选实施例，所述柔性显示面板为OLED显示面板或mini-LED显示面板。\n\n[0017]有益效果：本申请实施例提供一种曲面显示面板，本申请中的曲面显示面板包括曲面盖板、设于曲面盖板内侧的柔性衬底以及设于柔性衬底上柔性显示面板；其中，曲面盖板包括至少一侧的弯折部，弯折部向曲面盖板内弯曲，柔性衬底对应弯折部设置有曲面段，曲面段设置有镂空图案，曲面显示面板长期处于弯折状态，所承受的应力使的柔性衬底、柔性显示面板中膜层在弯折位置发生应变，相互挤压，填充镂空图案中，使其相互粘合在一起，起到缓解、传递和消除应力的作用，可降低曲面显示面板中弯折膜层应力集中和不均匀问题，且弯折位置中各膜层嵌设于镂空图案中，提高相邻膜层的粘附力，从而提升大曲率、大角度曲面屏显示品质。\n\n附图说明\n\n[0018]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1为本申请实施例提供一种曲面显示面板一种俯视结构示意图。\n\n[0020]图2为本申请实施例提供一种曲面显示面板又一种俯视结构结构示意图。\n\n[0021]图3为本申请实施例提供一种曲面显示面板膜层结构示意图。\n\n[0022]图4为本申请实施例提供一种曲面显示面板中曲面盖板结构示意图。\n\n[0023]图5为本申请实施例提供一种曲面显示面板中曲面盖板截面示意图。\n\n[0024]图6为本申请实施例提供一种曲面显示面板中柔性基板结构示意图。\n\n[0025]图7为本申请实施例提供一种曲面显示面板中曲面盖板与柔性基板装配示意图。\n\n[0026]图8为本申请实施例提供一种曲面显示面板中柔性基板中第一柔性层展开示意图。\n\n[0027]图9为图8中A处局部放大图。\n\n具体实施方式\n\n[0028]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0029]本申请针对现有技术中柔性大尺寸曲面显示面板的弯折位置中各膜层弯折曲率和弯折半径越大，易发生应力集中和应力不均匀，导致各膜层容易开裂的技术问题，本申请能够解决该缺陷。\n\n[0030]如图1和图2所示，本申请实施例提供一种曲面显示面板100，曲面显示面板100包括第一显示区101和位于第一显示区外围的第二显示区102，其中，第一显示区101和第二显示区102不在同一个平面，第一显示区101和第二显示区102相互连接在一起，形成一个完整的曲面屏幕，该曲面屏幕呈拱起或凹陷，增大显示屏的占比，实现窄边框，扩大用户观看视角，提升用户的视觉体验效果。具体地，如图1所示，第一显示区101为平面显示，第二显示区102为曲面显示，第二显示区102呈弧形斜坡，第二显示区102一侧与第一显示区101的四周衔接，形成一个完整的显示区，另外第二显示区102另一侧嵌入曲面显示面板100边框内，可以有效避免水蒸气和氧从边界的狭缝入侵到曲面显示面板100中发光器件层中，破坏发光结构。如图2所示，第一显示区101为曲面显示，第二显示区102为曲面显示，整个显示区呈弧形，视频画面的渲染较平面屏效果更强，增加显示区的观看视角，产生十足的沉浸感。曲面显示面板100优选为柔性OLED显示面板或柔性mini-LED显示面板。\n\n[0031]如图3所示，本申请实施例提供一种曲面显示面板100膜层结构示意图，以柔性OLED显示面板为例，为了配合大尺寸、高占比曲面显示面板100的第一显示区101和第二显示区102，本申请实施例在曲面显示面板100的背部设置对应曲面盖板103，曲面盖板103包裹第一显示区101和第二显示区102，即包裹柔性显示面板105，起到保护柔性显示面板105的作用。曲面盖板103内侧设置有柔性衬底104，柔性衬底104的内侧设置有柔性显示面板105，曲面盖板103包括至少一侧的弯折部，弯折部向曲面盖板103内弯曲，柔性衬底104对应弯折部设置有曲面段，曲面段设置有镂空图案，其中，柔性衬底104的形状与曲面盖板103的形状相同，柔性衬底104包括相贴合设置的第一柔性层1041、第一缓冲层1042、第二柔性层1043以及第二缓冲层1044，镂空图案由外向内至少贯穿第一柔性层1041，第一柔性层1041和第二柔性层1043均优选为聚酰亚胺，第一缓冲层1042和第二缓冲层1044为弹塑性有机材料，该弹塑性有机材料优选为四氟乙烯、六甲基二甲硅醚、聚丙烯酸酯类、聚碳酸脂类、聚苯乙烯中一种或一种以上的组合材料。曲面显示面板100长期处于弯折状态，所承受的应力较大，为了缓解、传递和消除应力，镂空图案位于曲面盖板103和柔性显示面板105之间，柔性衬底104中第一柔性层1041、第一缓冲层1042、第二柔性层1043以及第二缓冲层1044可以填充镂空图案中，使其相互粘合在一起，其次柔性显示面板105产生应变后，可以挤压柔性显示面板105的曲面段，起到缓解、传递和消除应力的作用，可降低曲面显示面板100中弯折膜层应力集中和不均匀问题，避免各个膜层产生开裂，弯折膜层嵌设于镂空图案，提高相邻膜层的粘附力，从而提升大曲率、大角度双曲面屏显示品质。\n\n[0032]如图4和图5所示，曲面盖板103采用相应的弧形结构，以包裹柔性显示面板105。曲面盖板103相对两侧分别延伸出第一弯折部1031和第二弯折部1032，第一弯折部1031和第二弯折部1032关于曲面盖板103中心线对称，第一弯折部1031和第二弯折部1032截面均呈向上突起弧形，预设弯折角度为β，0°＜β＜180°，曲面盖板103的底部为平面部，平面部与突起弧形形成凹槽状。第一弯折部1031、第二弯折部1032、第一弯折部1031与平面部接触部位、第二弯折部1032与平面部接触部位均呈平滑结构，平滑结构为圆弧或斜面，避免产生尖角和应力集中问题。第一弯折部1031和第二弯折部1032曲率均大于或等于3mm，且第一弯折部1031和第二弯折部1032的厚度小于平面部的厚度曲。如图6所示，柔性基板104相对两侧分别延伸出第一曲面段1045和第二曲面段1046，第一曲面段1045和第二曲面段1046的形状和大小相同，且第一曲面段1045和第二曲面段1046的长度小于柔性基板104的长度。如图7所示，柔性基板104贴合在曲面盖板103内表面上，第一曲面段1045贴合在第一弯折部1031上，第二曲面段1046贴合在第二弯折部1032上，柔性基板104贴合于该平面部，并延伸出该平面部的预设部分。\n\n[0033]如图8所示，本实施例提供一种柔性基板104中第一柔性层1041的展开示意图，第一柔性层1041相对的两侧分别延伸出第一曲面段10411和第二曲面段10412，第一曲面段10411和第二曲面段10412均设置有镂空图案，为了更清楚的显示镂空图案的结构，申请人在第二曲面段10412中取截面A，然后绘制A的放大图，如图9所示，镂空图案10413呈列的网格形状排布，在第二曲面段10412中，任意相邻两列镂空图案之间设置有一片整块连接体10414，且每列中相邻的镂空图案之间也设置有间隔连接块10415，第二曲面段10412边缘设置有未刻蚀所述镂空图案的保护层10416，连接体10414的宽度为W1，W1取值范围在0.1mm至1mm之间，连接块10415的宽度为W2，W2取值范围在0.1mm至1mm之间，保护层10416的宽度为W4，W4取值范围在2mm至6mm之间。镂空图案10413为长条形，长条形的长度为L1，L1取值范围在0.1mm至5mm之间，长条形的宽度为W3，W3取值范围在0.1mm至2mm之间。镂空图案10413为长圆形、长方形、或平行四边形中一种或一种以上组合图形，镂空图案10413起到缓冲应力和消除应力的作用，另外，镂空图案10413让柔性基板中膜层增加接触面积，提高膜层间的粘附力，有利于曲面显示面板的弯曲显示。\n\n[0034]由于第二曲面段10412向上凸起形成的，远离第一柔性层1041的第二曲面段10412的位置受到的弯折应力就更大，自柔性衬底104中心逐渐到曲面段边缘的每列所述镂空图案10413的宽度W3呈递增趋势，且所述镂空图案的长度L1不变，即远离第一柔性层1041的镂空图案10413的尺寸变大，镂空面积变大，有利于降低第一柔性层1041边缘的应变量，柔性显示面板105可以更多嵌设在镂空图案10413，进一步提高粘附力。\n\n[0035]本实施例中柔性显示面板105包括TFT层1051、位于TFT层1051表面的发光器件层1052、以及位于发光器件层1052表面的封装层1053，TFT层1051、发光器件层1052、和封装层1053跟普通的OLED显示面板中的结构类似，此处不再赘述，本实施中发光器件层1052中阳极通过阳极过孔与TFT层1051中漏极电性接触，该TFT层1051中源极与外接电源的正极相连，柔性印刷电路板贴附有相应驱动芯片，外接电源的负极通过绑定区，将相应电性号传递到电源走线层，最后电源走线层将相应电性号传递到显示区中发光功能层中阴极层，当外接电源正负两极为2V至10V的直流电压时，阳极层产生空穴，阴极层产生电子，在发光层相遇，电子和空穴分别带负电和正电，它们相互吸引，激发发光层中有机材料发光，产生红、绿、蓝(R、G、B)三基色，构成基本色彩，以实现曲面显示面板100的正常工作。\n\n[0036]本申请实施例提供一种曲面显示面板，本申请中曲面显示面板包括曲面盖板、设于曲面盖板内侧的柔性衬底以及设于柔性衬底上柔性显示面板；其中，曲面盖板包括至少一侧的弯折部，弯折部向曲面盖板内弯曲，柔性衬底对应弯折部设置有曲面段，曲面段设置有镂空图案，曲面显示面板长期处于弯折状态，所承受的应力使的柔性衬底、柔性显示面板中膜层在弯折位置发生应变，相互挤压，填充镂空图案中，使其相互粘合在一起，起到缓解、传递和消除应力的作用，可降低曲面显示面板中弯折膜层应力集中和不均匀问题，且弯折位置中各膜层嵌设于镂空图案，提高相邻膜层的粘附力，从而提升大曲率、大角度曲面屏显示品质。\n\n[0037]综上，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种曲面显示面板。\n\n背景技术\n\n[0002]曲面显示面板是指面板带有弧度的显示器设备，提升了用户视觉体验上的宽阔感，给人更广的视野，弯曲的边缘以及圆弧的画面能够更贴近用户与屏幕中央位置，实现基本相同的观赏角度，同时曲面屏可以让人体验到更好观影效果。\n\n[0003]柔性大尺寸的曲面显示面板具有大弯曲的角度、大的曲率以及无边框特征，尤其双曲面屏的屏幕一般设计成一个凹陷或外凸的造型，在侧面也可以显示和触摸，曲面屏的设计在当下颇为超前，具有圆润手感、精致外观、视角广阔、屏占比大等优点。当柔性大尺寸的曲面显示面板的弯曲的角度和曲率越大时，盖板层、柔性基板、驱动电路层、发光器件层在弯折的弧面曲率的变化，各处上承受的应力不均匀，容易发生应力集中，造成弯折段的薄膜晶体管、与薄膜晶体管相连金属走线、OLED发光器件层产生应变不同，导致不同膜层界面处开裂，严重影响显示效果。\n\n[0004]综上所述，现有技术中柔性大尺寸曲面显示面板的弯折位置中各膜层弯折曲率和弯折半径越大，易发生应力集中和应力不均匀，导致各膜层容易开裂的技术问题，需要改进。\n\n发明内容\n\n[0005]本申请实施例提供一种曲面显示面板，能够解决现有技术中柔性大尺寸曲面显示面板的弯折位置中各膜层弯折曲率和弯折半径越大，易发生应力集中和应力不均匀，导致各膜层容易开裂的技术问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本申请实施例提供一种曲面显示面板，包括曲面盖板、设于所述曲面盖板内侧的柔性衬底以及设于所述柔性衬底上的柔性显示面板；其中，所述曲面盖板包括至少一侧的弯折部，所述弯折部向所述曲面盖板内弯曲，所述柔性衬底对应所述弯折部设置有曲面段，所述曲面段设置有镂空图案。\n\n[0008]根据本申请一优选实施例，所述柔性衬底包括相贴合设置的第一柔性层、第一缓冲层、第二柔性层以及第二缓冲层，其中，所述第一柔性层和所述第二柔性层均为聚酰亚胺，所述第一缓冲层和所述第二缓冲层为弹塑性有机材料，所述镂空图案由外向内至少贯穿所述第一柔性层。\n\n[0009]根据本申请一优选实施例，所述镂空图案呈列分布，且任意相邻的两列的所述镂空图案错位设置。\n\n[0010]根据本申请一优选实施例，所述镂空图案为长条形，自所述柔性衬底中心逐渐到所述曲面段边缘的每列所述镂空图案的宽度呈递增趋势，且所述镂空图案的长度不变。\n\n[0011]根据本申请一优选实施例，任意相邻的两列所述镂空图案之间设置有一片整块连接体，每列中任意两个所述镂空图案之间设置间隔连接块，且所述曲面段边缘设置有未刻蚀所述镂空图案的保护层。\n\n[0012]根据本申请一优选实施例，所述曲面盖板的底部为平面部，所述弯折部截面呈向上突起弧形，所述平面部与所述突起弧形形成凹槽状。\n\n[0013]根据本申请一优选实施例，所述弯折部、所述弯折部与所述平面部接触部位均呈平滑结构，所述平滑结构为圆弧或斜面。\n\n[0014]根据本申请一优选实施例，所述柔性衬底贴合于所述平面部，并延伸出所述平面部的预设部分。\n\n[0015]根据本申请一优选实施例，所述柔性显示面板包括第一显示区和位于所述第一显示区外围的第二显示区，其中，所述第一显示区和所述第二显示区不在同一个平面，所述第一显示区为平面显示或曲面显示，所述第二显示区为曲面显示。\n\n[0016]根据本申请一优选实施例，所述柔性显示面板为OLED显示面板或mini-LED显示面板。\n\n[0017]有益效果：本申请实施例提供一种曲面显示面板，本申请中的曲面显示面板包括曲面盖板、设于曲面盖板内侧的柔性衬底以及设于柔性衬底上柔性显示面板；其中，曲面盖板包括至少一侧的弯折部，弯折部向曲面盖板内弯曲，柔性衬底对应弯折部设置有曲面段，曲面段设置有镂空图案，曲面显示面板长期处于弯折状态，所承受的应力使的柔性衬底、柔性显示面板中膜层在弯折位置发生应变，相互挤压，填充镂空图案中，使其相互粘合在一起，起到缓解、传递和消除应力的作用，可降低曲面显示面板中弯折膜层应力集中和不均匀问题，且弯折位置中各膜层嵌设于镂空图案中，提高相邻膜层的粘附力，从而提升大曲率、大角度曲面屏显示品质。\n\n附图说明\n\n[0018]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1为本申请实施例提供一种曲面显示面板一种俯视结构示意图。\n\n[0020]图2为本申请实施例提供一种曲面显示面板又一种俯视结构结构示意图。\n\n[0021]图3为本申请实施例提供一种曲面显示面板膜层结构示意图。\n\n[0022]图4为本申请实施例提供一种曲面显示面板中曲面盖板结构示意图。\n\n[0023]图5为本申请实施例提供一种曲面显示面板中曲面盖板截面示意图。\n\n[0024]图6为本申请实施例提供一种曲面显示面板中柔性基板结构示意图。\n\n[0025]图7为本申请实施例提供一种曲面显示面板中曲面盖板与柔性基板装配示意图。\n\n[0026]图8为本申请实施例提供一种曲面显示面板中柔性基板中第一柔性层展开示意图。\n\n[0027]图9为图8中A处局部放大图。\n\n具体实施方式\n\n[0028]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0029]本申请针对现有技术中柔性大尺寸曲面显示面板的弯折位置中各膜层弯折曲率和弯折半径越大，易发生应力集中和应力不均匀，导致各膜层容易开裂的技术问题，本申请能够解决该缺陷。\n\n[0030]如图1和图2所示，本申请实施例提供一种曲面显示面板100，曲面显示面板100包括第一显示区101和位于第一显示区外围的第二显示区102，其中，第一显示区101和第二显示区102不在同一个平面，第一显示区101和第二显示区102相互连接在一起，形成一个完整的曲面屏幕，该曲面屏幕呈拱起或凹陷，增大显示屏的占比，实现窄边框，扩大用户观看视角，提升用户的视觉体验效果。具体地，如图1所示，第一显示区101为平面显示，第二显示区102为曲面显示，第二显示区102呈弧形斜坡，第二显示区102一侧与第一显示区101的四周衔接，形成一个完整的显示区，另外第二显示区102另一侧嵌入曲面显示面板100边框内，可以有效避免水蒸气和氧从边界的狭缝入侵到曲面显示面板100中发光器件层中，破坏发光结构。如图2所示，第一显示区101为曲面显示，第二显示区102为曲面显示，整个显示区呈弧形，视频画面的渲染较平面屏效果更强，增加显示区的观看视角，产生十足的沉浸感。曲面显示面板100优选为柔性OLED显示面板或柔性mini-LED显示面板。\n\n[0031]如图3所示，本申请实施例提供一种曲面显示面板100膜层结构示意图，以柔性OLED显示面板为例，为了配合大尺寸、高占比曲面显示面板100的第一显示区101和第二显示区102，本申请实施例在曲面显示面板100的背部设置对应曲面盖板103，曲面盖板103包裹第一显示区101和第二显示区102，即包裹柔性显示面板105，起到保护柔性显示面板105的作用。曲面盖板103内侧设置有柔性衬底104，柔性衬底104的内侧设置有柔性显示面板105，曲面盖板103包括至少一侧的弯折部，弯折部向曲面盖板103内弯曲，柔性衬底104对应弯折部设置有曲面段，曲面段设置有镂空图案，其中，柔性衬底104的形状与曲面盖板103的形状相同，柔性衬底104包括相贴合设置的第一柔性层1041、第一缓冲层1042、第二柔性层1043以及第二缓冲层1044，镂空图案由外向内至少贯穿第一柔性层1041，第一柔性层1041和第二柔性层1043均优选为聚酰亚胺，第一缓冲层1042和第二缓冲层1044为弹塑性有机材料，该弹塑性有机材料优选为四氟乙烯、六甲基二甲硅醚、聚丙烯酸酯类、聚碳酸脂类、聚苯乙烯中一种或一种以上的组合材料。曲面显示面板100长期处于弯折状态，所承受的应力较大，为了缓解、传递和消除应力，镂空图案位于曲面盖板103和柔性显示面板105之间，柔性衬底104中第一柔性层1041、第一缓冲层1042、第二柔性层1043以及第二缓冲层1044可以填充镂空图案中，使其相互粘合在一起，其次柔性显示面板105产生应变后，可以挤压柔性显示面板105的曲面段，起到缓解、传递和消除应力的作用，可降低曲面显示面板100中弯折膜层应力集中和不均匀问题，避免各个膜层产生开裂，弯折膜层嵌设于镂空图案，提高相邻膜层的粘附力，从而提升大曲率、大角度双曲面屏显示品质。\n\n[0032]如图4和图5所示，曲面盖板103采用相应的弧形结构，以包裹柔性显示面板105。曲面盖板103相对两侧分别延伸出第一弯折部1031和第二弯折部1032，第一弯折部1031和第二弯折部1032关于曲面盖板103中心线对称，第一弯折部1031和第二弯折部1032截面均呈向上突起弧形，预设弯折角度为β，0°＜β＜180°，曲面盖板103的底部为平面部，平面部与突起弧形形成凹槽状。第一弯折部1031、第二弯折部1032、第一弯折部1031与平面部接触部位、第二弯折部1032与平面部接触部位均呈平滑结构，平滑结构为圆弧或斜面，避免产生尖角和应力集中问题。第一弯折部1031和第二弯折部1032曲率均大于或等于3mm，且第一弯折部1031和第二弯折部1032的厚度小于平面部的厚度曲。如图6所示，柔性基板104相对两侧分别延伸出第一曲面段1045和第二曲面段1046，第一曲面段1045和第二曲面段1046的形状和大小相同，且第一曲面段1045和第二曲面段1046的长度小于柔性基板104的长度。如图7所示，柔性基板104贴合在曲面盖板103内表面上，第一曲面段1045贴合在第一弯折部1031上，第二曲面段1046贴合在第二弯折部1032上，柔性基板104贴合于该平面部，并延伸出该平面部的预设部分。\n\n[0033]如图8所示，本实施例提供一种柔性基板104中第一柔性层1041的展开示意图，第一柔性层1041相对的两侧分别延伸出第一曲面段10411和第二曲面段10412，第一曲面段10411和第二曲面段10412均设置有镂空图案，为了更清楚的显示镂空图案的结构，申请人在第二曲面段10412中取截面A，然后绘制A的放大图，如图9所示，镂空图案10413呈列的网格形状排布，在第二曲面段10412中，任意相邻两列镂空图案之间设置有一片整块连接体10414，且每列中相邻的镂空图案之间也设置有间隔连接块10415，第二曲面段10412边缘设置有未刻蚀所述镂空图案的保护层10416，连接体10414的宽度为W1，W1取值范围在0.1mm至1mm之间，连接块10415的宽度为W2，W2取值范围在0.1mm至1mm之间，保护层10416的宽度为W4，W4取值范围在2mm至6mm之间。镂空图案10413为长条形，长条形的长度为L1，L1取值范围在0.1mm至5mm之间，长条形的宽度为W3，W3取值范围在0.1mm至2mm之间。镂空图案10413为长圆形、长方形、或平行四边形中一种或一种以上组合图形，镂空图案10413起到缓冲应力和消除应力的作用，另外，镂空图案10413让柔性基板中膜层增加接触面积，提高膜层间的粘附力，有利于曲面显示面板的弯曲显示。\n\n[0034]由于第二曲面段10412向上凸起形成的，远离第一柔性层1041的第二曲面段10412的位置受到的弯折应力就更大，自柔性衬底104中心逐渐到曲面段边缘的每列所述镂空图案10413的宽度W3呈递增趋势，且所述镂空图案的长度L1不变，即远离第一柔性层1041的镂空图案10413的尺寸变大，镂空面积变大，有利于降低第一柔性层1041边缘的应变量，柔性显示面板105可以更多嵌设在镂空图案10413，进一步提高粘附力。\n\n[0035]本实施例中柔性显示面板105包括TFT层1051、位于TFT层1051表面的发光器件层1052、以及位于发光器件层1052表面的封装层1053，TFT层1051、发光器件层1052、和封装层1053跟普通的OLED显示面板中的结构类似，此处不再赘述，本实施中发光器件层1052中阳极通过阳极过孔与TFT层1051中漏极电性接触，该TFT层1051中源极与外接电源的正极相连，柔性印刷电路板贴附有相应驱动芯片，外接电源的负极通过绑定区，将相应电性号传递到电源走线层，最后电源走线层将相应电性号传递到显示区中发光功能层中阴极层，当外接电源正负两极为2V至10V的直流电压时，阳极层产生空穴，阴极层产生电子，在发光层相遇，电子和空穴分别带负电和正电，它们相互吸引，激发发光层中有机材料发光，产生红、绿、蓝(R、G、B)三基色，构成基本色彩，以实现曲面显示面板100的正常工作。\n\n[0036]本申请实施例提供一种曲面显示面板，本申请中曲面显示面板包括曲面盖板、设于曲面盖板内侧的柔性衬底以及设于柔性衬底上柔性显示面板；其中，曲面盖板包括至少一侧的弯折部，弯折部向曲面盖板内弯曲，柔性衬底对应弯折部设置有曲面段，曲面段设置有镂空图案，曲面显示面板长期处于弯折状态，所承受的应力使的柔性衬底、柔性显示面板中膜层在弯折位置发生应变，相互挤压，填充镂空图案中，使其相互粘合在一起，起到缓解、传递和消除应力的作用，可降低曲面显示面板中弯折膜层应力集中和不均匀问题，且弯折位置中各膜层嵌设于镂空图案，提高相邻膜层的粘附力，从而提升大曲率、大角度曲面屏显示品质。\n\n[0037]综上，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10861, 23915, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种电子设备。\n\n背景技术\n\n[0002]声表面波(Surface Acoustic Wave,SAW)器件是近代声学中的表面波理论、压电学研究成果和微电子技术有机结合的产物。所谓SAW，是一能量集中在压电固体(晶体基片)材料表面传播的弹性波，其传播特点是：(1)较低的波速和较短的波长，(2)沿晶体表面传播，能量集中在表层，不涉及晶体内电子迁移过程。基于这些特性，SAW器件在无线传感集成方面有着独特、灵活的应用。\n\n[0003]SAW器件一般包括晶体基片、输入接线、输入接线、IDT叉指状金属电极、声信号通道以及吸声体。具体的，SAW器件主要由具有压电特性的基底材料和在该材料的抛光面上制作的金属薄膜叉指状换能器(IDT)组成。传感原理为：在IDT电极两端加入高频电信号，压电材料的表面就会产生机械振动并同时激发出与外加电信号频率相同的表面声波，这种表面声波会沿基板材料表面传播；若在SAW传播途径上再制作一对IDT电极，则可将SAW检测并使其转换成电信号。而SAW器件的工作频率由IDT指条宽度决定，其中，0.2-0.5μm级的半导体加工工艺沉积IDT图案，可制作出工作频率1500MHz-3GHz的SAW器件，也就意味着输入频率要和器件的工作频率一致才能保证器件正常工作。\n\n[0004]如果将SAW器件的输入端采用接收天线，那么该器件便只能接收和传输固定频率的电磁波，从而实现无线传感信号的筛选应答。\n\n[0005]众所周知，电磁波器件的尺寸要同电磁波长相比拟，同理，SAW器件作为电磁器件的声表面波模拟器件，它的尺寸亦和SAW波长相比拟。在同一频段上，SAW的传播速度和波长要远远小于电磁波，因此，SAW器件的尺寸比相应电磁波器件的尺寸减小了很多，重量也随之大为减轻。例如，用于汽车胎压检测系统的SAW压力传感器封装尺寸仅为11mm,厚度约2mm,质量[0006]IDT叉指状金属电极借助于光刻工艺技术制作，具体的工艺流程为：基片清洗、镀金属膜、上光阻、显影、蚀刻、去光阻、切割、封装。这与半导体显示制程有较大的共同之处，二者的工艺应能相互融合。此外，基体晶片的材料多采用石英(SiO2)、铌酸锂(LiNbO3)、铌酸钾(KNbO3)、压电陶瓷等材料，其中SiO2也是制造显示面板的常用材料。\n\n[0007]综上分析，SAW器件结构简单，片式化尺寸小，且能够与半导体显示制程相结合，这为将SAW器件集成到显示面板中提供可能。下一代面板显示技术也正朝着高集成化传感的方向发展。\n\n[0008]另外，据了解，随着5G通信技术的发展，SAW器件作为射频前端的核心元器件，由4G手机中的30余个将增加到91个以上，这会大大缩减手机内部空间，影响其余部件的集成。\n\n发明内容\n\n[0009]本发明的目的在于，提供一种电子设备，使其实现无线传感的目标，并解决电子设备排布空间不足的技术问题。\n\n[0010]为实现上述目的，本发明提供一种电子设备，所述电子设备为显示设备，所述显示设备具有显示区和围绕所述显示区的非显示区；所述显示设备还包括基板，在所述显示区，多个声表面波器件排布于所述基板上。\n\n[0011]进一步地，所述基板为非柔性基板，所述显示设备还包括\n\n[0012]若干第一走线和若干第二走线，相互间隔设置于所述基板的非显示区的同一侧，且从所述基板的正面弯折至所述基板的背面；第一芯片和第二芯片，所述第一芯片设于所述基板的背面且连接于部分第一走线，所述第二芯片设于所述基板的背面且连接于部分第二走线；以及第一柔性电路板和第二柔性电路板，相互间隔的设置于所述非显示区，所述第一柔性电路板连接于部分第一走线，所述第二柔性电路板连接于部分第二走线；当所述第一走线和所述第二走线未弯折时，所述第一柔性电路板位于所述第一芯片和所述显示区之间，且所述第二柔性电路板位于所述第二芯片和所述显示区之间；所述声表面波器件通过所述第二走线连接至所述第二芯片。\n\n[0013]进一步地，所述基板为柔性基板，所述显示设备还包括\n\n[0014]第一芯片和第二芯片，相互间隔设置；所述第一芯片和所述第二芯片直接设置至所述基板的非显示区并被弯折至所述基板的背面；若干第一走线和若干第二走线，相互间隔设置于所述基板上，所述第一走线从所述第一芯片的位置引出，所述第二走线从所述第二芯片的位置引出；以及第一柔性电路板和第二柔性电路板，相互间隔的设置于所述非显示区，所述第一柔性电路板连接于部分第一走线，所述第二柔性电路板连接于部分第二走线；当所述基板未弯折时，所述第一芯片位于所述第一柔性电路板和所述显示区之间，且所述第二芯片位于所述第二柔性电路板和所述显示区之间；所述声表面波器件通过所述第二走线连接至所述第二芯片。\n\n[0015]进一步地，所述声表面波器件包括：\n\n[0016]基体；叉指换能器，设于所述基体上，具有输入部和输出部，所述输入部和输出部之间具有声表面波的传输距离；以及天线，连接于所述输入部或所述输出部；其中，所述声表面波器件集成于所述显示区中，且其所述输入部或所述输出部通过所述第二走线中的走线引出至所述第二芯片。\n\n[0017]进一步地，所述电子设备包括micro LED显示设备、mini LED显示设备、OLED显示设备、液晶显示设备。\n\n[0018]进一步地，当所述显示设备为micro LED显示设备或OLED显示设备时，所述基板为阵列基板；所述声表面波器件还包括保护层，设于所述叉指换能器远离所述基体的一面。\n\n[0019]进一步地，当所述显示设备为mini LED显示设备时，所述基板为背光模组，所述mini LED显示设备还包括\n\n[0020]背板；多个mini LED阵列设置于所述背板上；所述声表面波器件设于所述背板远离所述mini LED的一面；所述声表面波器件还包括保护层，设于所述叉指换能器远离所述基体的一面。\n\n[0021]进一步地，所述保护层的材质为硅氧化物，其厚度为30-50nm。\n\n[0022]进一步地，当所述显示设备为液晶显示设备时，所述基板为所述液晶显示设备的衬底结构，所述衬底结构包括\n\n[0023]玻璃基板；遮光层，设于所述玻璃基板上；缓冲层，设于所述遮光层上；\n\n[0024]掺杂缓冲层，设于所述缓冲层上；有源层，设于所述掺杂缓冲层上，且其在所述玻璃基板的投影落入所述遮光层在所述玻璃基板的投影内；以及绝缘层，设于所述有源层和所述叉指换能器上；其中，所述掺杂缓冲层为所述声表面波器件的基体，所述叉指换能器与所述有源层同层设置。\n\n[0025]进一步地，多个所述声表面波器件阵列式排布于所述基板上，相邻两个声表面波器件之间的间距为1-2mm。\n\n[0026]本发明的技术效果在于，本发明提供一种电子设备，在显示面板中设置声表面波器件，一方面可以实现无线传感的目标，以增加电子设备的附加值；另一方面，有利于解决电子设备排布空间不足的问题，取得良好的经济效益。\n\n附图说明\n\n[0027]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0028]图1为本申请实施例1所述电子设备的平面图。\n\n[0029]图2为本申请实施例1所述声表面波器件集成于显示区的结构示意图。\n\n[0030]图3为本申请实施例所述声表面波器件的结构示意图一。\n\n[0031]图4为本申请实施例所述声表面波器件的结构示意图二。\n\n[0032]图5为本申请实施例2所述电子设备的平面图。\n\n[0033]图6为本申请实施例3所述micro LED显示设备的结构示意图。\n\n[0034]图7为本申请实施例5所述mini LED显示设备的结构示意图。\n\n[0035]图8为本申请实施例5所述声表面波器件集成于背光模组的结构示意图。\n\n[0036]图9为本申请实施例6所述液晶显示设备的结构示意图。\n\n[0037]附图部分标识如下：\n\n[0038]100显示设备；200声表面波器件；\n\n[0039]100a micro LED显示设备；100b mini LED显示设备；100c液晶显示设备；\n\n[0040]101显示区；102非显示区；103基板；\n\n[0041]104彩膜基板；105封装层；106第一偏光片；\n\n[0042]107阵列基板；108第二偏光片；109液晶层；\n\n[0043]201基体；202叉指换能器；203保护层；\n\n[0044]2021输入部；2022输出部；\n\n[0045]111a第一走线；111b第二走线；\n\n[0046]112a第一柔性电路板；112b第二柔性电路板；\n\n[0047]113a第一芯片；113b第二芯片；\n\n[0048]21a、104a黑色矩阵；21b micro LED；104b像素单元；\n\n[0049]103a背板；103b mini LED；\n\n[0050]301衬底结构；302栅极；303第一介电层；\n\n[0051]304源漏极；305平坦层；306a第二介电层；\n\n[0052]306b第三介电层；307阳极层；308钝化层；\n\n[0053]309阴极层；401液晶层；402彩膜基板；\n\n[0054]3011玻璃基板；3012遮光层；3013缓冲层；\n\n[0055]3014掺杂缓冲层；3015有源层；3016绝缘层。\n\n具体实施方式\n\n[0056]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0057]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0058]实施例1\n\n[0059]如图1所示，本实施例提供一种电子设备，所述电子设备为显示设备100，显示设备100具有显示区101和围绕显示区101的非显示区102。\n\n[0060]如图2所示，显示设备100还包括基板103，多个声表面波器件200阵列式排布于基板103上，且集成于显示区101中，其中，相邻两个声表面波器件200之间的间距L为1-2mm，声表面波器件200在接收或发射不同波段的电磁信号时，以防止多个声表面波器件200间相互干扰。本实施例中，基板103为非柔性基板。\n\n[0061]如图1所示，显示设备100还包括第一走线111a、第二走线111b、第一柔性电路板112a(FPC)、第二柔性电路板112b(FPC)、第一芯片113a以及第二芯片113b。\n\n[0062]第一走线111a和第二走线111b，相互间隔的设置于基板103的非显示区102的同一侧，且从基板103的正面弯折至基板103的背面。\n\n[0063]第一芯片113a设于基板103的背面且连接于部分第一走线111a，第二芯片113b设于基板103的背面且连接于部分第二走线111b。其中，第一芯片113a为触控芯片、驱动芯片等芯片，用于驱动薄膜晶体管工作，第二芯片113b为驱动芯片，用以驱动声表面波器件200工作。\n\n[0064]第一柔性电路板112a和第二柔性电路板112b，相互间隔的设置于非显示区102，第一柔性电路板112a连接于部分第一走线111a，第二柔性电路板112b连接于部分第二走线111b；当第一走线111a和第二走线111b未弯折时，第一柔性电路板112a位于第一芯片113a和显示区101之间，且第二柔性电路板112b位于第二芯片113b和显示区101之间。声表面波器件200通过第二走线111b连接至述第二芯片113b。\n\n[0065]目前，芯片封装主要采用COG(Chip On Glass)、COF(Chip On Flex,or,ChipOnFilm)和COP(Chip On Pi)三种工艺进行芯片的封装。本实施例采用COF工艺进行芯片封装。其中，COG为传统封装方法，驱动芯片被直接绑定在液晶显示面板的玻璃表面进行封装。COF又称覆晶薄膜，和COG相比本实施例COF最大的改进是将芯片等芯片固定于柔性线路板上的晶粒软膜构装，并且运用了软质附加电路板作封装芯片载体，将芯片与软性基板电路接合的封装技术。更直观的表述就是芯片被镶嵌在了柔性电路板软板上，也就是附着在了屏幕和印制电路板主板之间的排线之上。\n\n[0066]如图3-4所示，声表面波器件200包括基体201、叉指换能器202以及天线203。\n\n[0067]基体201的材质为硅氧化物，本实施例基体201的材质优选为SiO2。\n\n[0068]叉指换能器202设于基体201上，具有输入部2021和输出部2022，输入部2021和输出部2022之间具有声表面波的传输距离d。叉指换能器202是通过光刻工艺形成。叉指换能器202的输入部2021和输出部2022分别为叉指换能器202电极的输入端和输出端，这两个电极可以通过化学气相沉积(CVD)、物理气相(PVD)溅射、物理气相(PVD)蒸镀等方式形成。\n\n[0069]如图3所示，天线203连接于输入部2021，其输出部2022通过第二走线111b中的走线引出至第二柔性电路板112b。\n\n[0070]如图4所示，天线203连接于输出部2022，其输入部2021通过第二走线111b中的走线引出至第二柔性电路板112b。\n\n[0071]本实施例提供一种电子设备，声表面波器件的走线的封装方式与显示驱动的走线的封装方式一致，解决电子设备排布空间不足的问题以实现窄边框的电子设备，还可以实现无线传感的目标，以增加电子设备的附加值。\n\n[0072]实施例2\n\n[0073]如图5所示，本实施例提供一种电子设备，所述电子设备为显示设备100，显示设备100具有显示区101和围绕显示区101的非显示区102。\n\n[0074]如图2所示，显示设备100还包括基板103，集成有多个声表面波器件200阵列式排布于基板103上，且集成于显示区101中，其中，相邻两个声表面波器件200之间的间距L为1-2mm，声表面波器件200在接收或发射不同波段的电磁信号时，以防止多个声表面波器件200间相互干扰。本实施例中，基板103为柔性基板。\n\n[0075]具体的，如图5所示，显示设备100还包括第一走线111a、第二走线111b、第一柔性电路板112a(FPC)、第二柔性电路板112b(FPC)、第一芯片113a以及第二芯片113b。\n\n[0076]具体的，第一芯片113a和第二芯片113b相互间隔的设置于非显示区102，且第一芯片113a和第二芯片113b直接设置至基板的非显示区102并被弯折至基板103的背面。其中，第一芯片113a为触控芯片、驱动芯片等芯片，第二芯片113b为驱动芯片，用以驱动声表面波器件200工作。\n\n[0077]若干第一走线111a和若干第二走线111b，相互间隔的设置于基板103上的非显示区102，第一走线111a从第一芯片113a的位置引出，第二走线111b从第二芯片113b的位置引出。\n\n[0078]第一柔性电路板112a和第二柔性电路板112b，相互间隔的设置于非显示区102，第一柔性电路板112a连接于部分第一走线111a，第二柔性电路板112b连接于部分第二走线111b。当基板103未弯折时，第一芯片113a位于第一柔性电路板112a和显示区101之间，且第二芯片113b位于第二柔性电路板112b和显示区101之间。声表面波器件200通过第二走线111b连接至第二芯片113b。\n\n[0079]本实施例中，COP封装技术可以视为专为柔性显示设备定制的完美封装方案，即基板103为柔性基板，如聚酰亚胺，可将走线和芯片等全部绕到基板103后端(即基板的背面)，相比COF的封装，能够进一步减少显示面板的边框。\n\n[0080]如图3-4所示，声表面波器件200包括基体201、叉指换能器202以及天线203。\n\n[0081]基体201的材质为硅氧化物，本实施例基体201的材质优选为SiO2。\n\n[0082]叉指换能器202设于基体201上，具有输入部2021和输出部2022，输入部2021和输出部2022之间具有声表面波的传输距离d。叉指换能器202是通过光刻工艺形成。叉指换能器202的输入部2021和输出部2022分别为叉指换能器202电极的输入端和输出端，这两个电极可以通过化学气相沉积(CVD)、物理气相(PVD)溅射、物理气相(PVD)蒸镀等方式形成。\n\n[0083]如图3所示，天线203连接于输入部2021，其输出部2022通过第二走线111b中的走线引出至第二柔性电路板112b。\n\n[0084]如图4所示，天线203连接于输出部2022，其输入部2021连接至第二柔性电路板112b。\n\n[0085]本实施例提供一种电子设备，声表面波器件的走线的封装方式与显示驱动的走线的封装方式一致，解决电子设备排布空间不足的问题以实现窄边框的电子设备，还可以实现无线传感的目标，以增加电子设备的附加值。\n\n[0086]本实施例提供一种电子设备与实施例1的区别在于，本实施例是通过COP工艺对非显示区的线路进行封装，实施例1是通过COF工艺对非显示区的线路进行封装，这两种封装方式都是为了实现超窄边框的电子设备。因此，本发明实施例包括这两种封装方式但不限于其他封装方式。\n\n[0087]实施例3\n\n[0088]本实施例提供一种电子设备，包括实施例1或实施例2的全部技术方案，其区别在于，所述电子设备还包括所述显示设备的具体结构。\n\n[0089]如图6所示，本实施例提供一种电子设备，所述电子设备为显示设备，该显示设备为micro LED显示设备100a。\n\n[0090]micro LED显示设备100a包括阵列基板和彩膜基板，其中，实施例1或实施例2所述的基板103为本实施例的阵列基板，声表面波器件200设于所述阵列基板的下表面。所述阵列基板包括多个薄膜晶体管，每一薄膜晶体管包括有源层、栅极、源极、漏极、扫描线、数据线以及层间绝缘层等部件。彩膜基板104包括黑色矩阵21a和多个micro LED21b，microLED21b包括红色micro LED器件、绿色micro LED器件、蓝色micro LED器件，本实施例直接将micro LED器件安装于所述阵列基板上，且micro LED器件的尺寸小于100um。\n\n[0091]micro LED显示设备100a还包括封装层105，可以完全地覆盖于micro LED21b上，以阻隔水汽、氧气，保护micro LED21b。封装层105一般包括有机封装层和无机封装层，无机封装层对水汽、氧气有很好的阻隔性能；有机封装层的存在可以使器件表面平整度更好，有利于后续无机封装层的形成，同时有机封装层的抗弯折性能比较好。\n\n[0092]本实施例中，声表面波器件200包括基体201、叉指换能器202以及保护层203。其中，保护层203设于叉指换能器202远离基体201的一面。保护层203的材质为硅氧化物，其厚度为30-50nm。该保护层203用以防止叉指换能器202的金属电极被氧化，影响后续microLED显示设备的其他部件制程中将金属电极刻蚀破坏以及金属电极裸露被氧化，影响叉指换能器202的导电性能。\n\n[0093]本实施例将所述声表面波器件的走线从阵列基板的背面(即阵列基板的下方)引出，显示驱动的走线从阵列基板的正面引出，使得所述声表面波器件的走线与显示驱动走线在空间上遵循不交叠的原则，从而解决电子设备排布空间不足的问题。需要说明的是，所述的显示驱动走线指的是扫描线、数据线等走线。\n\n[0094]本实施例的micro LED显示设备可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。\n\n[0095]本实施例提供一种电子设备，在显示面板中设置声表面波器件，一方面可以实现无线传感的目标，以增加电子设备的附加值；另一方面，有利于解决电子设备排布空间不足的问题，取得良好的经济效益。\n\n[0096]实施例4\n\n[0097]本实施例提供一种电子设备，包括实施例3的大部分技术方案，其区别在于，该显示设备为OLED显示设备，所述OLED显示设备在所述阵列基板上中制备量子点发光单元以替代micro LED，其中，量子点发光单元包括红色量子点发光单元、绿色量子点发光单元、蓝色量子点发光单元。另外，关于所述OLED显示设备的具体结构可以参照现有OLED显示设备的结构，在此不一一赘述。\n\n[0098]本实施例提供一种电子设备，也是将所述声表面波器件的走线从阵列基板的背面(即阵列基板的下方)引出，显示驱动的走线从阵列基板的正面引出，从而使得所述声表面波器件的走线与显示驱动走线在空间上遵循不交叠的原则。需要说明的是，所述的显示驱动走线指的是扫描线、数据线等走线。\n\n[0099]本实施例的OLED显示设备可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。\n\n[0100]本实施例提供一种电子设备，在显示面板中设置声表面波器件，一方面可以实现无线传感的目标，以增加电子设备的附加值；另一方面，有利于解决电子设备排布空间不足的问题，取得良好的经济效益。\n\n[0101]实施例5\n\n[0102]本实施例提供一种电子设备，包括实施例1或实施例2的全部技术方案，其区别在于，所述电子设备还包括所述显示设备的具体结构。\n\n[0103]如图7所示，本实施例提供一种电子设备，所述电子设备为显示设备，该显示设备为mini LED显示设备100b。\n\n[0104]mini LED显示设备100b包括背光模组、第一偏光片106、阵列基板107、彩膜基板104、第二偏光片108以及液晶层109。其中，实施例1或实施例2所述的基板103为本实施例的背光模组，所述声表面波器件设于所述背板的下表面。\n\n[0105]如图8所示，背光模组103包括背板103a以及多个mini LED103b，多个miniLED103b阵列设置于背板103a的上表面。声表面波器件200设于背板103a远离mini LED103b的一面。\n\n[0106]具体的，声表面波器件200包括基体201、叉指换能器202以及保护层203。其中，保护层203设于叉指换能器202远离基体201的一面。保护层203的材质为硅氧化物，其厚度为30-50nm。该保护层203用以防止叉指换能器202的金属电极被氧化，影响后续mini LED显示设备的其他部件制程中将金属电极刻蚀破坏以及金属电极裸露被氧化，影响叉指换能器202的导电性能。\n\n[0107]如图7所示，第一偏光片106和阵列基板107依次设于所述背板上，阵列基板107与彩膜基板104相对设置，液晶层109设于阵列基板107与彩膜基板104之间，第二偏光片108设于彩膜基板104上。阵列基板107包括多个薄膜晶体管，每一薄膜晶体管包括有源层、栅极、源极、漏极、扫描线、数据线以及层间绝缘层等部件。彩膜基板104包括黑色矩阵104a和多个像素单元104b，所述像素单元包括红色子像素单元、绿色子像素单元、白色子像素单元。黑色矩阵104a位于所述红色子像素单元、所述绿色子像素单元和所述白色子像素单元中的任意两者之间。所述红色子像素单元、所述绿色子像素单元和所述白色子像素单元的色彩转换材料可以为荧光粉或者量子点。所述白色子像素单元中不设置荧光粉或者量子点，蓝光直接经过所述白色子像素单元而发出蓝光。\n\n[0108]本实施例将声表面波器件200的走线从背光模组侧(即阵列基板的背面)引出，显示驱动的走线从阵列基板的正面引出，使得声表面波器件200的走线与显示驱动走线在空间上遵循不交叠的原则，从而解决电子设备排布空间不足的问题。需要说明的是，所述的显示驱动走线指的是扫描线、数据线等走线。\n\n[0109]本实施例的micro LED显示设备100b可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。\n\n[0110]本实施例提供一种电子设备，在显示面板中设置声表面波器件，一方面可以实现无线传感的目标，以增加电子设备的附加值；另一方面，有利于解决电子设备排布空间不足的问题，取得良好的经济效益。\n\n[0111]实施例6\n\n[0112]本实施例提供一种电子设备，包括实施例1的大部分部技术方案，其区别在于，所述声表面波器件的叉指换能器与有源层同层设置，并包括所述显示设备的具体结构。\n\n[0113]如图9所示，本实施例提供一种电子设备，所述电子设备为显示设备，该显示设备为液晶显示设备100c。\n\n[0114]液晶显示设备100c包括衬底结构301，衬底结构301包括玻璃基板3011、遮光层3012、缓冲层3013、掺杂缓冲层3014、有源层3015以及绝缘层3016。遮光层3012、缓冲层3013、掺杂缓冲层3014以及有源层3015依次设于玻璃基板3011上。\n\n[0115]有源层3015为LTPS，其在玻璃基板3011的投影落入遮光层3012在玻璃基板3011的投影内。\n\n[0116]缓冲层3013为氮硅化合物，其材质优选为SiNX，以阻隔水汽、氧气，提高液晶显示设备100c的阻隔水氧的能力。\n\n[0117]掺杂缓冲层3014的材质为硅氧化物，其材质优选为SiO2。\n\n[0118]声表面波器件200包括基体、叉指换能器以及保护层。本实施例中，掺杂缓冲层3014作为声表面波器件200的基体，叉指换能器202与有源层3015同层设置，绝缘层3016作为声表面波器件200的保护层。绝缘层3016设于有源层3015和叉指换能器202上，其材质为硅氧化物，厚度为30-50nm。该绝缘层3016用以防止叉指换能器202的金属电极被氧化，影响后续液晶显示设备100c的其他部件制程中将金属电极刻蚀破坏以及金属电极裸露被氧化，影响叉指换能器202的导电性能。\n\n[0119]液晶显示设备100c还包括栅极302、第一介电层303、源漏极304、平坦层305、第二介电层306a、第三介电层306b、阳极层307、钝化层308、阴极层309、液晶层401以及彩膜基板402。栅极302设于衬底结构301上，且其正对着有源层3015。第一介电层303设于栅极302上，源漏极304贯穿第一介电层303且连接至有源层，或者连接至栅极层的栅极线。平坦层305、第二介电层306a、阳极层307以及钝化层308依次设于源漏极304上。阴极层309设于钝化层308上且通过过孔连接至源漏极304。其中，衬底结构301、栅极302、第一介电层303、源漏极304、平坦层305、第二介电层306a、第三介电层306b、阳极层307、钝化层308以及阴极层309构成液晶显示设备100c的阵列基板。所述阵列基板与彩膜基板402相对设置，液晶层401设于所述阵列基板与彩膜基板402之间。本实施例中，衬底结构301以上的金属层为阵列基板的显示驱动走线，该金属层包括栅极302、源漏极304、阳极层307以及阴极层309等。\n\n[0120]本实施例的液晶显示设备100c为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。\n\n[0121]本实施例提供一种电子设备，通过将所述声表面波器件的叉指换能器与有源层同层设置，使得声表面波器件集成于电子设备中，其制备工艺与半导体(即有源层)的制备工艺具有相似性和共通性，可以增加电子设备的集成度和附加值，为未来新显示集成技术的开发做铺垫。进一步地，所述声表面波器件的走线与显示驱动的走线位于不同层，遵循了所述声表面波器件的走线与显示驱动走线在空间上不交叠的原则，从而解决电子设备排布空间不足的问题。\n\n[0122]本实施例提供一种电子设备，在显示面板中设置声表面波器件，一方面可以实现无线传感的目标，以增加电子设备的附加值；另一方面，有利于解决电子设备排布空间不足的问题，取得良好的经济效益。\n\n[0123]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0124]以上对本申请实施例所提供的一种电子设备进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种电子设备。\n\n背景技术\n\n[0002]声表面波(Surface Acoustic Wave,SAW)器件是近代声学中的表面波理论、压电学研究成果和微电子技术有机结合的产物。所谓SAW，是一能量集中在压电固体(晶体基片)材料表面传播的弹性波，其传播特点是：(1)较低的波速和较短的波长，(2)沿晶体表面传播，能量集中在表层，不涉及晶体内电子迁移过程。基于这些特性，SAW器件在无线传感集成方面有着独特、灵活的应用。\n\n[0003]SAW器件一般包括晶体基片、输入接线、输入接线、IDT叉指状金属电极、声信号通道以及吸声体。具体的，SAW器件主要由具有压电特性的基底材料和在该材料的抛光面上制作的金属薄膜叉指状换能器(IDT)组成。传感原理为：在IDT电极两端加入高频电信号，压电材料的表面就会产生机械振动并同时激发出与外加电信号频率相同的表面声波，这种表面声波会沿基板材料表面传播；若在SAW传播途径上再制作一对IDT电极，则可将SAW检测并使其转换成电信号。而SAW器件的工作频率由IDT指条宽度决定，其中，0.2-0.5μm级的半导体加工工艺沉积IDT图案，可制作出工作频率1500MHz-3GHz的SAW器件，也就意味着输入频率要和器件的工作频率一致才能保证器件正常工作。\n\n[0004]如果将SAW器件的输入端采用接收天线，那么该器件便只能接收和传输固定频率的电磁波，从而实现无线传感信号的筛选应答。\n\n[0005]众所周知，电磁波器件的尺寸要同电磁波长相比拟，同理，SAW器件作为电磁器件的声表面波模拟器件，它的尺寸亦和SAW波长相比拟。在同一频段上，SAW的传播速度和波长要远远小于电磁波，因此，SAW器件的尺寸比相应电磁波器件的尺寸减小了很多，重量也随之大为减轻。例如，用于汽车胎压检测系统的SAW压力传感器封装尺寸仅为11mm,厚度约2mm,质量[0006]IDT叉指状金属电极借助于光刻工艺技术制作，具体的工艺流程为：基片清洗、镀金属膜、上光阻、显影、蚀刻、去光阻、切割、封装。这与半导体显示制程有较大的共同之处，二者的工艺应能相互融合。此外，基体晶片的材料多采用石英(SiO2)、铌酸锂(LiNbO3)、铌酸钾(KNbO3)、压电陶瓷等材料，其中SiO2也是制造显示面板的常用材料。\n\n[0007]综上分析，SAW器件结构简单，片式化尺寸小，且能够与半导体显示制程相结合，这为将SAW器件集成到显示面板中提供可能。下一代面板显示技术也正朝着高集成化传感的方向发展。\n\n[0008]另外，据了解，随着5G通信技术的发展，SAW器件作为射频前端的核心元器件，由4G手机中的30余个将增加到91个以上，这会大大缩减手机内部空间，影响其余部件的集成。\n\n发明内容\n\n[0009]本发明的目的在于，提供一种电子设备，使其实现无线传感的目标，并解决电子设备排布空间不足的技术问题。\n\n[0010]为实现上述目的，本发明提供一种电子设备，所述电子设备为显示设备，所述显示设备具有显示区和围绕所述显示区的非显示区；所述显示设备还包括基板，在所述显示区，多个声表面波器件排布于所述基板上。\n\n[0011]进一步地，所述基板为非柔性基板，所述显示设备还包括\n\n[0012]若干第一走线和若干第二走线，相互间隔设置于所述基板的非显示区的同一侧，且从所述基板的正面弯折至所述基板的背面；第一芯片和第二芯片，所述第一芯片设于所述基板的背面且连接于部分第一走线，所述第二芯片设于所述基板的背面且连接于部分第二走线；以及第一柔性电路板和第二柔性电路板，相互间隔的设置于所述非显示区，所述第一柔性电路板连接于部分第一走线，所述第二柔性电路板连接于部分第二走线；当所述第一走线和所述第二走线未弯折时，所述第一柔性电路板位于所述第一芯片和所述显示区之间，且所述第二柔性电路板位于所述第二芯片和所述显示区之间；所述声表面波器件通过所述第二走线连接至所述第二芯片。\n\n[0013]进一步地，所述基板为柔性基板，所述显示设备还包括\n\n[0014]第一芯片和第二芯片，相互间隔设置；所述第一芯片和所述第二芯片直接设置至所述基板的非显示区并被弯折至所述基板的背面；若干第一走线和若干第二走线，相互间隔设置于所述基板上，所述第一走线从所述第一芯片的位置引出，所述第二走线从所述第二芯片的位置引出；以及第一柔性电路板和第二柔性电路板，相互间隔的设置于所述非显示区，所述第一柔性电路板连接于部分第一走线，所述第二柔性电路板连接于部分第二走线；当所述基板未弯折时，所述第一芯片位于所述第一柔性电路板和所述显示区之间，且所述第二芯片位于所述第二柔性电路板和所述显示区之间；所述声表面波器件通过所述第二走线连接至所述第二芯片。\n\n[0015]进一步地，所述声表面波器件包括：\n\n[0016]基体；叉指换能器，设于所述基体上，具有输入部和输出部，所述输入部和输出部之间具有声表面波的传输距离；以及天线，连接于所述输入部或所述输出部；其中，所述声表面波器件集成于所述显示区中，且其所述输入部或所述输出部通过所述第二走线中的走线引出至所述第二芯片。\n\n[0017]进一步地，所述电子设备包括micro LED显示设备、mini LED显示设备、OLED显示设备、液晶显示设备。\n\n[0018]进一步地，当所述显示设备为micro LED显示设备或OLED显示设备时，所述基板为阵列基板；所述声表面波器件还包括保护层，设于所述叉指换能器远离所述基体的一面。\n\n[0019]进一步地，当所述显示设备为mini LED显示设备时，所述基板为背光模组，所述mini LED显示设备还包括\n\n[0020]背板；多个mini LED阵列设置于所述背板上；所述声表面波器件设于所述背板远离所述mini LED的一面；所述声表面波器件还包括保护层，设于所述叉指换能器远离所述基体的一面。\n\n[0021]进一步地，所述保护层的材质为硅氧化物，其厚度为30-50nm。\n\n[0022]进一步地，当所述显示设备为液晶显示设备时，所述基板为所述液晶显示设备的衬底结构，所述衬底结构包括\n\n[0023]玻璃基板；遮光层，设于所述玻璃基板上；缓冲层，设于所述遮光层上；\n\n[0024]掺杂缓冲层，设于所述缓冲层上；有源层，设于所述掺杂缓冲层上，且其在所述玻璃基板的投影落入所述遮光层在所述玻璃基板的投影内；以及绝缘层，设于所述有源层和所述叉指换能器上；其中，所述掺杂缓冲层为所述声表面波器件的基体，所述叉指换能器与所述有源层同层设置。\n\n[0025]进一步地，多个所述声表面波器件阵列式排布于所述基板上，相邻两个声表面波器件之间的间距为1-2mm。\n\n[0026]本发明的技术效果在于，本发明提供一种电子设备，在显示面板中设置声表面波器件，一方面可以实现无线传感的目标，以增加电子设备的附加值；另一方面，有利于解决电子设备排布空间不足的问题，取得良好的经济效益。\n\n附图说明\n\n[0027]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0028]图1为本申请实施例1所述电子设备的平面图。\n\n[0029]图2为本申请实施例1所述声表面波器件集成于显示区的结构示意图。\n\n[0030]图3为本申请实施例所述声表面波器件的结构示意图一。\n\n[0031]图4为本申请实施例所述声表面波器件的结构示意图二。\n\n[0032]图5为本申请实施例2所述电子设备的平面图。\n\n[0033]图6为本申请实施例3所述micro LED显示设备的结构示意图。\n\n[0034]图7为本申请实施例5所述mini LED显示设备的结构示意图。\n\n[0035]图8为本申请实施例5所述声表面波器件集成于背光模组的结构示意图。\n\n[0036]图9为本申请实施例6所述液晶显示设备的结构示意图。\n\n[0037]附图部分标识如下：\n\n[0038]100显示设备；200声表面波器件；\n\n[0039]100a micro LED显示设备；100b mini LED显示设备；100c液晶显示设备；\n\n[0040]101显示区；102非显示区；103基板；\n\n[0041]104彩膜基板；105封装层；106第一偏光片；\n\n[0042]107阵列基板；108第二偏光片；109液晶层；\n\n[0043]201基体；202叉指换能器；203保护层；\n\n[0044]2021输入部；2022输出部；\n\n[0045]111a第一走线；111b第二走线；\n\n[0046]112a第一柔性电路板；112b第二柔性电路板；\n\n[0047]113a第一芯片；113b第二芯片；\n\n[0048]21a、104a黑色矩阵；21b micro LED；104b像素单元；\n\n[0049]103a背板；103b mini LED；\n\n[0050]301衬底结构；302栅极；303第一介电层；\n\n[0051]304源漏极；305平坦层；306a第二介电层；\n\n[0052]306b第三介电层；307阳极层；308钝化层；\n\n[0053]309阴极层；401液晶层；402彩膜基板；\n\n[0054]3011玻璃基板；3012遮光层；3013缓冲层；\n\n[0055]3014掺杂缓冲层；3015有源层；3016绝缘层。\n\n具体实施方式\n\n[0056]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0057]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0058]实施例1\n\n[0059]如图1所示，本实施例提供一种电子设备，所述电子设备为显示设备100，显示设备100具有显示区101和围绕显示区101的非显示区102。\n\n[0060]如图2所示，显示设备100还包括基板103，多个声表面波器件200阵列式排布于基板103上，且集成于显示区101中，其中，相邻两个声表面波器件200之间的间距L为1-2mm，声表面波器件200在接收或发射不同波段的电磁信号时，以防止多个声表面波器件200间相互干扰。本实施例中，基板103为非柔性基板。\n\n[0061]如图1所示，显示设备100还包括第一走线111a、第二走线111b、第一柔性电路板112a(FPC)、第二柔性电路板112b(FPC)、第一芯片113a以及第二芯片113b。\n\n[0062]第一走线111a和第二走线111b，相互间隔的设置于基板103的非显示区102的同一侧，且从基板103的正面弯折至基板103的背面。\n\n[0063]第一芯片113a设于基板103的背面且连接于部分第一走线111a，第二芯片113b设于基板103的背面且连接于部分第二走线111b。其中，第一芯片113a为触控芯片、驱动芯片等芯片，用于驱动薄膜晶体管工作，第二芯片113b为驱动芯片，用以驱动声表面波器件200工作。\n\n[0064]第一柔性电路板112a和第二柔性电路板112b，相互间隔的设置于非显示区102，第一柔性电路板112a连接于部分第一走线111a，第二柔性电路板112b连接于部分第二走线111b；当第一走线111a和第二走线111b未弯折时，第一柔性电路板112a位于第一芯片113a和显示区101之间，且第二柔性电路板112b位于第二芯片113b和显示区101之间。声表面波器件200通过第二走线111b连接至述第二芯片113b。\n\n[0065]目前，芯片封装主要采用COG(Chip On Glass)、COF(Chip On Flex,or,ChipOnFilm)和COP(Chip On Pi)三种工艺进行芯片的封装。本实施例采用COF工艺进行芯片封装。其中，COG为传统封装方法，驱动芯片被直接绑定在液晶显示面板的玻璃表面进行封装。COF又称覆晶薄膜，和COG相比本实施例COF最大的改进是将芯片等芯片固定于柔性线路板上的晶粒软膜构装，并且运用了软质附加电路板作封装芯片载体，将芯片与软性基板电路接合的封装技术。更直观的表述就是芯片被镶嵌在了柔性电路板软板上，也就是附着在了屏幕和印制电路板主板之间的排线之上。\n\n[0066]如图3-4所示，声表面波器件200包括基体201、叉指换能器202以及天线203。\n\n[0067]基体201的材质为硅氧化物，本实施例基体201的材质优选为SiO2。\n\n[0068]叉指换能器202设于基体201上，具有输入部2021和输出部2022，输入部2021和输出部2022之间具有声表面波的传输距离d。叉指换能器202是通过光刻工艺形成。叉指换能器202的输入部2021和输出部2022分别为叉指换能器202电极的输入端和输出端，这两个电极可以通过化学气相沉积(CVD)、物理气相(PVD)溅射、物理气相(PVD)蒸镀等方式形成。\n\n[0069]如图3所示，天线203连接于输入部2021，其输出部2022通过第二走线111b中的走线引出至第二柔性电路板112b。\n\n[0070]如图4所示，天线203连接于输出部2022，其输入部2021通过第二走线111b中的走线引出至第二柔性电路板112b。\n\n[0071]本实施例提供一种电子设备，声表面波器件的走线的封装方式与显示驱动的走线的封装方式一致，解决电子设备排布空间不足的问题以实现窄边框的电子设备，还可以实现无线传感的目标，以增加电子设备的附加值。\n\n[0072]实施例2\n\n[0073]如图5所示，本实施例提供一种电子设备，所述电子设备为显示设备100，显示设备100具有显示区101和围绕显示区101的非显示区102。\n\n[0074]如图2所示，显示设备100还包括基板103，集成有多个声表面波器件200阵列式排布于基板103上，且集成于显示区101中，其中，相邻两个声表面波器件200之间的间距L为1-2mm，声表面波器件200在接收或发射不同波段的电磁信号时，以防止多个声表面波器件200间相互干扰。本实施例中，基板103为柔性基板。\n\n[0075]具体的，如图5所示，显示设备100还包括第一走线111a、第二走线111b、第一柔性电路板112a(FPC)、第二柔性电路板112b(FPC)、第一芯片113a以及第二芯片113b。\n\n[0076]具体的，第一芯片113a和第二芯片113b相互间隔的设置于非显示区102，且第一芯片113a和第二芯片113b直接设置至基板的非显示区102并被弯折至基板103的背面。其中，第一芯片113a为触控芯片、驱动芯片等芯片，第二芯片113b为驱动芯片，用以驱动声表面波器件200工作。\n\n[0077]若干第一走线111a和若干第二走线111b，相互间隔的设置于基板103上的非显示区102，第一走线111a从第一芯片113a的位置引出，第二走线111b从第二芯片113b的位置引出。\n\n[0078]第一柔性电路板112a和第二柔性电路板112b，相互间隔的设置于非显示区102，第一柔性电路板112a连接于部分第一走线111a，第二柔性电路板112b连接于部分第二走线111b。当基板103未弯折时，第一芯片113a位于第一柔性电路板112a和显示区101之间，且第二芯片113b位于第二柔性电路板112b和显示区101之间。声表面波器件200通过第二走线111b连接至第二芯片113b。\n\n[0079]本实施例中，COP封装技术可以视为专为柔性显示设备定制的完美封装方案，即基板103为柔性基板，如聚酰亚胺，可将走线和芯片等全部绕到基板103后端(即基板的背面)，相比COF的封装，能够进一步减少显示面板的边框。\n\n[0080]如图3-4所示，声表面波器件200包括基体201、叉指换能器202以及天线203。\n\n[0081]基体201的材质为硅氧化物，本实施例基体201的材质优选为SiO2。\n\n[0082]叉指换能器202设于基体201上，具有输入部2021和输出部2022，输入部2021和输出部2022之间具有声表面波的传输距离d。叉指换能器202是通过光刻工艺形成。叉指换能器202的输入部2021和输出部2022分别为叉指换能器202电极的输入端和输出端，这两个电极可以通过化学气相沉积(CVD)、物理气相(PVD)溅射、物理气相(PVD)蒸镀等方式形成。\n\n[0083]如图3所示，天线203连接于输入部2021，其输出部2022通过第二走线111b中的走线引出至第二柔性电路板112b。\n\n[0084]如图4所示，天线203连接于输出部2022，其输入部2021连接至第二柔性电路板112b。\n\n[0085]本实施例提供一种电子设备，声表面波器件的走线的封装方式与显示驱动的走线的封装方式一致，解决电子设备排布空间不足的问题以实现窄边框的电子设备，还可以实现无线传感的目标，以增加电子设备的附加值。\n\n[0086]本实施例提供一种电子设备与实施例1的区别在于，本实施例是通过COP工艺对非显示区的线路进行封装，实施例1是通过COF工艺对非显示区的线路进行封装，这两种封装方式都是为了实现超窄边框的电子设备。因此，本发明实施例包括这两种封装方式但不限于其他封装方式。\n\n[0087]实施例3\n\n[0088]本实施例提供一种电子设备，包括实施例1或实施例2的全部技术方案，其区别在于，所述电子设备还包括所述显示设备的具体结构。\n\n[0089]如图6所示，本实施例提供一种电子设备，所述电子设备为显示设备，该显示设备为micro LED显示设备100a。\n\n[0090]micro LED显示设备100a包括阵列基板和彩膜基板，其中，实施例1或实施例2所述的基板103为本实施例的阵列基板，声表面波器件200设于所述阵列基板的下表面。所述阵列基板包括多个薄膜晶体管，每一薄膜晶体管包括有源层、栅极、源极、漏极、扫描线、数据线以及层间绝缘层等部件。彩膜基板104包括黑色矩阵21a和多个micro LED21b，microLED21b包括红色micro LED器件、绿色micro LED器件、蓝色micro LED器件，本实施例直接将micro LED器件安装于所述阵列基板上，且micro LED器件的尺寸小于100um。\n\n[0091]micro LED显示设备100a还包括封装层105，可以完全地覆盖于micro LED21b上，以阻隔水汽、氧气，保护micro LED21b。封装层105一般包括有机封装层和无机封装层，无机封装层对水汽、氧气有很好的阻隔性能；有机封装层的存在可以使器件表面平整度更好，有利于后续无机封装层的形成，同时有机封装层的抗弯折性能比较好。\n\n[0092]本实施例中，声表面波器件200包括基体201、叉指换能器202以及保护层203。其中，保护层203设于叉指换能器202远离基体201的一面。保护层203的材质为硅氧化物，其厚度为30-50nm。该保护层203用以防止叉指换能器202的金属电极被氧化，影响后续microLED显示设备的其他部件制程中将金属电极刻蚀破坏以及金属电极裸露被氧化，影响叉指换能器202的导电性能。\n\n[0093]本实施例将所述声表面波器件的走线从阵列基板的背面(即阵列基板的下方)引出，显示驱动的走线从阵列基板的正面引出，使得所述声表面波器件的走线与显示驱动走线在空间上遵循不交叠的原则，从而解决电子设备排布空间不足的问题。需要说明的是，所述的显示驱动走线指的是扫描线、数据线等走线。\n\n[0094]本实施例的micro LED显示设备可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。\n\n[0095]本实施例提供一种电子设备，在显示面板中设置声表面波器件，一方面可以实现无线传感的目标，以增加电子设备的附加值；另一方面，有利于解决电子设备排布空间不足的问题，取得良好的经济效益。\n\n[0096]实施例4\n\n[0097]本实施例提供一种电子设备，包括实施例3的大部分技术方案，其区别在于，该显示设备为OLED显示设备，所述OLED显示设备在所述阵列基板上中制备量子点发光单元以替代micro LED，其中，量子点发光单元包括红色量子点发光单元、绿色量子点发光单元、蓝色量子点发光单元。另外，关于所述OLED显示设备的具体结构可以参照现有OLED显示设备的结构，在此不一一赘述。\n\n[0098]本实施例提供一种电子设备，也是将所述声表面波器件的走线从阵列基板的背面(即阵列基板的下方)引出，显示驱动的走线从阵列基板的正面引出，从而使得所述声表面波器件的走线与显示驱动走线在空间上遵循不交叠的原则。需要说明的是，所述的显示驱动走线指的是扫描线、数据线等走线。\n\n[0099]本实施例的OLED显示设备可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。\n\n[0100]本实施例提供一种电子设备，在显示面板中设置声表面波器件，一方面可以实现无线传感的目标，以增加电子设备的附加值；另一方面，有利于解决电子设备排布空间不足的问题，取得良好的经济效益。\n\n[0101]实施例5\n\n[0102]本实施例提供一种电子设备，包括实施例1或实施例2的全部技术方案，其区别在于，所述电子设备还包括所述显示设备的具体结构。\n\n[0103]如图7所示，本实施例提供一种电子设备，所述电子设备为显示设备，该显示设备为mini LED显示设备100b。\n\n[0104]mini LED显示设备100b包括背光模组、第一偏光片106、阵列基板107、彩膜基板104、第二偏光片108以及液晶层109。其中，实施例1或实施例2所述的基板103为本实施例的背光模组，所述声表面波器件设于所述背板的下表面。\n\n[0105]如图8所示，背光模组103包括背板103a以及多个mini LED103b，多个miniLED103b阵列设置于背板103a的上表面。声表面波器件200设于背板103a远离mini LED103b的一面。\n\n[0106]具体的，声表面波器件200包括基体201、叉指换能器202以及保护层203。其中，保护层203设于叉指换能器202远离基体201的一面。保护层203的材质为硅氧化物，其厚度为30-50nm。该保护层203用以防止叉指换能器202的金属电极被氧化，影响后续mini LED显示设备的其他部件制程中将金属电极刻蚀破坏以及金属电极裸露被氧化，影响叉指换能器202的导电性能。\n\n[0107]如图7所示，第一偏光片106和阵列基板107依次设于所述背板上，阵列基板107与彩膜基板104相对设置，液晶层109设于阵列基板107与彩膜基板104之间，第二偏光片108设于彩膜基板104上。阵列基板107包括多个薄膜晶体管，每一薄膜晶体管包括有源层、栅极、源极、漏极、扫描线、数据线以及层间绝缘层等部件。彩膜基板104包括黑色矩阵104a和多个像素单元104b，所述像素单元包括红色子像素单元、绿色子像素单元、白色子像素单元。黑色矩阵104a位于所述红色子像素单元、所述绿色子像素单元和所述白色子像素单元中的任意两者之间。所述红色子像素单元、所述绿色子像素单元和所述白色子像素单元的色彩转换材料可以为荧光粉或者量子点。所述白色子像素单元中不设置荧光粉或者量子点，蓝光直接经过所述白色子像素单元而发出蓝光。\n\n[0108]本实施例将声表面波器件200的走线从背光模组侧(即阵列基板的背面)引出，显示驱动的走线从阵列基板的正面引出，使得声表面波器件200的走线与显示驱动走线在空间上遵循不交叠的原则，从而解决电子设备排布空间不足的问题。需要说明的是，所述的显示驱动走线指的是扫描线、数据线等走线。\n\n[0109]本实施例的micro LED显示设备100b可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。\n\n[0110]本实施例提供一种电子设备，在显示面板中设置声表面波器件，一方面可以实现无线传感的目标，以增加电子设备的附加值；另一方面，有利于解决电子设备排布空间不足的问题，取得良好的经济效益。\n\n[0111]实施例6\n\n[0112]本实施例提供一种电子设备，包括实施例1的大部分部技术方案，其区别在于，所述声表面波器件的叉指换能器与有源层同层设置，并包括所述显示设备的具体结构。\n\n[0113]如图9所示，本实施例提供一种电子设备，所述电子设备为显示设备，该显示设备为液晶显示设备100c。\n\n[0114]液晶显示设备100c包括衬底结构301，衬底结构301包括玻璃基板3011、遮光层3012、缓冲层3013、掺杂缓冲层3014、有源层3015以及绝缘层3016。遮光层3012、缓冲层3013、掺杂缓冲层3014以及有源层3015依次设于玻璃基板3011上。\n\n[0115]有源层3015为LTPS，其在玻璃基板3011的投影落入遮光层3012在玻璃基板3011的投影内。\n\n[0116]缓冲层3013为氮硅化合物，其材质优选为SiNX，以阻隔水汽、氧气，提高液晶显示设备100c的阻隔水氧的能力。\n\n[0117]掺杂缓冲层3014的材质为硅氧化物，其材质优选为SiO2。\n\n[0118]声表面波器件200包括基体、叉指换能器以及保护层。本实施例中，掺杂缓冲层3014作为声表面波器件200的基体，叉指换能器202与有源层3015同层设置，绝缘层3016作为声表面波器件200的保护层。绝缘层3016设于有源层3015和叉指换能器202上，其材质为硅氧化物，厚度为30-50nm。该绝缘层3016用以防止叉指换能器202的金属电极被氧化，影响后续液晶显示设备100c的其他部件制程中将金属电极刻蚀破坏以及金属电极裸露被氧化，影响叉指换能器202的导电性能。\n\n[0119]液晶显示设备100c还包括栅极302、第一介电层303、源漏极304、平坦层305、第二介电层306a、第三介电层306b、阳极层307、钝化层308、阴极层309、液晶层401以及彩膜基板402。栅极302设于衬底结构301上，且其正对着有源层3015。第一介电层303设于栅极302上，源漏极304贯穿第一介电层303且连接至有源层，或者连接至栅极层的栅极线。平坦层305、第二介电层306a、阳极层307以及钝化层308依次设于源漏极304上。阴极层309设于钝化层308上且通过过孔连接至源漏极304。其中，衬底结构301、栅极302、第一介电层303、源漏极304、平坦层305、第二介电层306a、第三介电层306b、阳极层307、钝化层308以及阴极层309构成液晶显示设备100c的阵列基板。所述阵列基板与彩膜基板402相对设置，液晶层401设于所述阵列基板与彩膜基板402之间。本实施例中，衬底结构301以上的金属层为阵列基板的显示驱动走线，该金属层包括栅极302、源漏极304、阳极层307以及阴极层309等。\n\n[0120]本实施例的液晶显示设备100c为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。\n\n[0121]本实施例提供一种电子设备，通过将所述声表面波器件的叉指换能器与有源层同层设置，使得声表面波器件集成于电子设备中，其制备工艺与半导体(即有源层)的制备工艺具有相似性和共通性，可以增加电子设备的集成度和附加值，为未来新显示集成技术的开发做铺垫。进一步地，所述声表面波器件的走线与显示驱动的走线位于不同层，遵循了所述声表面波器件的走线与显示驱动走线在空间上不交叠的原则，从而解决电子设备排布空间不足的问题。\n\n[0122]本实施例提供一种电子设备，在显示面板中设置声表面波器件，一方面可以实现无线传感的目标，以增加电子设备的附加值；另一方面，有利于解决电子设备排布空间不足的问题，取得良好的经济效益。\n\n[0123]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0124]以上对本申请实施例所提供的一种电子设备进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10862, 23916, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种显示装置及电子设备。\n\n背景技术\n\n[0002]如图1所示，其为传统有机发光二极管显示面板（Active Metrix Organic LightEmitting Diode，AMOLED）的示意图。有机发光二极管显示面板包括正常显示区A、过渡显示区B以及透光显示区C，过渡显示区B位于透光显示区C和正常显示区A之间。在过渡显示区B设置有多个像素驱动电路以及对应的金属信号线，位于过渡显示区B的部分像素驱动电路用于驱动透光显示区C中的显示像素，且过渡显示区B中驱动透光显示区C中显示像素的像素驱动电路与透光显示区C中的显示像素之间通过透明导线电性连接，使得透光显示区C中显示像素对应的像素驱动电路及对应的金属信号线设置于透光显示区C之外，保证透光显示区C的透光率，使透光显示区C具有摄像以及显示的双重功能。另外，在正常显示区A中设置有多个阵列排布的显示像素以及对应的像素驱动电路，以实现显示。然而，在有机发光二极管显示面板处于息屏状态时，且在强光照射有机发光显示面板的条件下，过渡显示区与正常显示区之间会出现明显的分界问题。\n\n[0003]因此，有必要提出一种技术方案以解决过渡显示区和正常显示区在显示面板处于息屏且强光照射的条件下会出现明显分界的问题。\n\n发明内容\n\n[0004]本申请的目的在于提供一种显示面板及电子设备，以解决过渡显示区和正常显示区在显示面板处于息屏且强光照射的条件下会出现明显分界的问题。\n\n[0005]为实现上述目的，本申请提供一种显示装置，所述显示装置具有主显示区、过渡显示区以及显示透光区，所述过渡显示区位于所述主显示区和所述显示透光区之间，所述显示装置包括：\n\n[0006]多个第一显示像素，设置于所述主显示区；\n\n[0007]多个第二显示像素，设置于所述过渡显示区和所述显示透光区；\n\n[0008]多个第一像素驱动电路，阵列地设置于所述主显示区，且用于驱动多个所述第一显示像素；\n\n[0009]多个第二像素驱动电路，设置于所述过渡显示区，且用于驱动多个所述第二显示像素；以及\n\n[0010]金属反射部，设置于所述过渡显示区，且所述金属反射部至少位于多个所述第二像素驱动电路之间的间隙。\n\n[0011]本申请还提供一种电子设备，所述电子设备包括上述显示装置及感光单元，所述感光单元对应所述显示装置的所述显示透光区设置。\n\n[0012]有益效果：本申请提供一种显示装置及电子设备，通过在过渡显示区中多个第二像素驱动电路之间的间隙设置金属反射部，以使得过渡显示区的反射率与主显示区的反射率接近，避免主显示区和过渡显示区在息屏且强光照射下出现明显的分界效果。\n\n附图说明\n\n[0013]图1为传统有机发光二极管显示面板的示意图；\n\n[0014]图2为本申请实施例显示装置的平面示意图；\n\n[0015]图3为图2所示显示装置中第一显示像素和第二显示像素的分布示意图；\n\n[0016]图4为图2所示显示装置的局部放大示意图；\n\n[0017]图5为图4所示第一像素驱动电路的等效电路图；\n\n[0018]图6为第一像素驱动电路对应的驱动时序图；\n\n[0019]图7为相邻两个第一像素驱动电路的平面示意图；\n\n[0020]图8为图2所示显示装置的主显示区、过渡显示区以及显示透光区的局部放大示意图；\n\n[0021]图9为图8中像素驱动电路岛的示意图；\n\n[0022]图10为像素驱动电路岛中的第二像素驱动电路及第二像素驱动电路正上方图案化第四金属层的平面示意图；\n\n[0023]图11为显示装置的过渡显示区设置金属反射部的局部放大示意图；\n\n[0024]图12为显示装置的第一种截面示意图；\n\n[0025]图13为镂空部在金属反射部中的位置对应部分低反射堆叠部在多个第一像素驱动电路中的位置的示意图；\n\n[0026]图14为显示装置的第二种截面示意图。\n\n具体实施方式\n\n[0027]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0028]本申请提供一种显示装置100，显示装置100可以为液晶显示装置，也可以为有机发光二极管显示装置。具体地，显示装置100为有机发光二极管显示装置。\n\n[0029]请参阅图2及图3，图2为本申请实施例显示装置的平面示意图，图3为图2所示显示装置中第一显示像素和第二显示像素的分布示意图。显示装置100具有显示透光区100a、主显示区100c以及过渡显示区100b。显示装置100包括多个第一显示像素、多个第一像素驱动电路104、多个第二显示像素、多个像素驱动电路岛101、多个第一信号线102、多个第二信号线103以及金属反射部105。\n\n[0030]过渡显示区100b设置于显示透光区100a和主显示区100c之间。主显示区100c和过渡显示区100b均用于显示。显示透光区100a用于显示的同时，还具有高透光特性。显示透光区100a的透光率大于主显示区100c和过渡显示区100b的透光率。主显示区100c的面积大于过渡显示区100b的面积以及显示透光区100a的面积。\n\n[0031]显示透光区100a具有弧形边界，显示透光区100a的形状为椭圆形、圆形、倒角正方形或者其他形状。过渡显示区100b为环形。过渡显示区100b为椭圆环形、圆环形或者正方环形中的任意一种。\n\n[0032]具体地，显示透光区100a为圆形。显示透光区100a关于第一对称轴A-A和第二对称轴B-B对称设置，第一对称轴A-A与第二对称轴B-B垂直。过渡显示区100b为环形，过渡显示区100b靠近显示透光区100a的边界为圆形，过渡显示区100b靠近主显示区100c的边界呈台阶形。\n\n[0033]如图3所示，多个第一显示像素均匀地设置于主显示区100c，每个第一显示像素包括第一红色子像素100c1、第一绿色子像素100c3以及第一蓝色子像素100c2。第一红色子像素100c1、第一绿色子像素100c3以及第一蓝色子像素100c2在主显示区100c呈Pentile设计分布。第一绿色子像素100c3的形状为椭圆形，第一红色子像素100c1和第一蓝色子像素100c2均呈八边形。第一显示像素的每个子像素包括有机发光二极管OLED。\n\n[0034]如图4所示，图4为图2所示显示装置的局部放大示意图，多个第一像素驱动电路104阵列地设置于主显示区100c。一个第一像素驱动电路104对应驱动主显示区100c的一个子像素（第一红色子像素100c1、第一绿色子像素100c3以及第一蓝色子像素100c2中的一个）发光。多个第一像素驱动电路104在主显示区100c和过渡显示区100b之间的交界处呈台阶形分布，以适应主显示区100c的第一显示像素的子像素在主显示区100c和过渡显示区100b之间的交界处呈台阶形分布。\n\n[0035]如图5-图6所示，图5为图4所示第一像素驱动电路的等效电路图，图6为第一像素驱动电路对应的驱动时序图，图7为相邻两个第一像素驱动电路的平面示意图。每个第一像素驱动电路包括驱动晶体管M1、开关晶体管M2、补偿晶体管M3、初始化晶体管M4、第一发光控制晶体管M5、第二发光控制晶体管M6、阳极复位晶体管M7以及电容器C，即第一像素驱动电路104为7T1C电路。驱动晶体管M1、开关晶体管M2、补偿晶体管M3、初始化晶体管M4、第一发光控制晶体管M5、第二发光控制晶体管M6以及阳极复位晶体管M7均为P型晶体管。\n\n[0036]显示装置100还包括多个与第一像素驱动电路104电性连接的走线，多个走线包括设置于主显示区100c的第i-1级扫描信号线SCAN（i-1）、第i级扫描信号线SCAN（i）、数据线D(j)、数据线D(j+1)、初始化信号线VI、直流电源信号线VDD以及第i级发光控制信号线EM（i）。第i-1级扫描信号线SCAN（i-1）用于传输第i-1级扫描信号。第i级扫描信号线SCAN（i）用于传输第i级扫描信号。数据线D(j)以及D(j+1)数据线用于传输数据信号。直流电源信号线VDD用于传输直流电源信号。第i级发光控制信号线EM（i）用于传输第i级发光控制信号。以下结合图5以及图6对相邻两个第一像素驱动电路104中与数据线D(j)连接的第一像素驱动电路104进行描述。\n\n[0037]驱动晶体管M1的栅极G1与电容器C的第一极板C1、补偿晶体管M3的漏极D3以及初始化晶体管M4的源极S4连接，驱动晶体管M1的源极S1通过第一发光控制晶体管M5与直流电源信号线VDD连接，且驱动晶体管M1的源极S1通过开关晶体管M2与数据线D(j)连接，驱动晶体管M1的漏极D1通过第二发光控制晶体管M6与有机发光二极管OLED连接。开关晶体管M2打开，驱动晶体管M1接收数据线D(j)传输的数据信号且为有机发光二极管OLED提供驱动电流。\n\n[0038]开关晶体管M2的栅极G2与第i级扫描信号线SCAN（i）连接，开关晶体管M2的源极S2与数据线D（j）连接，开关晶体管M2的漏极D2与驱动晶体管M1的源极S1连接，开关晶体管M2的漏极D2还通过第一发光控制晶体管M5与直流电源信号线VDD连接。开关晶体管M2根据第i级扫描信号线SCAN（i）传输的第i级扫描信号导通或截止，控制数据线D(j)传输的数据信号是否写入至驱动晶体管M1的源极S1。\n\n[0039]补偿晶体管M3的栅极G3与第i级扫描信号线SCAN（i）连接，补偿晶体管M3的源极S3与驱动晶体管M1的漏极D1连接，补偿晶体管M3的源极S3还通过第二发光控制晶体管M6与有机发光二极管OLED连接，补偿晶体管M3的漏极D3与驱动晶体管M1的栅极G1、初始化晶体管M4的源极S4以及电容器C的第一极板C1连接。补偿晶体管M3根据第i级扫描信号线SCAN（i）传输的第i级扫描信号导通或截止，电性连接驱动晶体管M1的栅极G1和驱动晶体管M1的漏极D1。\n\n[0040]初始化晶体管M4的栅极G4与第i-1级扫描信号线SCAN（i-1）连接，初始化晶体管M4的漏极D4与阳极复位晶体管M7的漏极D7以及初始化信号线VI连接，初始化晶体管M4的源极S4与驱动晶体管M1的栅极G1、补偿晶体管M3的漏极D3以及电容器C的第一极板C1连接。初始化晶体管M4根据第i-1级扫描信号线SCAN（i-1）传输的第i-1级扫描信号导通或截止，控制初始化信号线VI传输的初始化信号是否写入至驱动晶体管M1的栅极G1。\n\n[0041]第一发光控制晶体管M5的栅极G5与第i级发光控制信号线EM（i）连接，第一发光控制晶体管M5的源极S5与直流电源信号线VDD以及电容器C的第二极板C2连接，第一发光控制晶体管M5的漏极D5与驱动晶体管M1的源极S1以及开关晶体管M2的漏极D2连接。第一发光控制晶体管M5根据第i级发光控制信号线EM（i）传输的第i级发光控制信号导通或截止，控制直流电源信号线VDD传输的直流电源信号传输是否写入至驱动晶体管M1的源极S1。\n\n[0042]第二发光控制晶体管M6的栅极G6与第i级发光控制信号线EM（i）连接，第二发光控制晶体管M6的源极S6与驱动晶体管M1的漏极D1以及补偿晶体管M3的源极S3连接，第二发光控制晶体管M6的漏极D6与有机发光二极管OLED的阳极以及阳极复位晶体管M7的源极S7连接。第二发光控制晶体管M6根据第i级发光控制信号线EM（i）传输的第i级发光控制信号导通或截止，控制驱动电流是否流入到有机发光二极管OLED。\n\n[0043]阳极复位晶体管M7的栅极G7与第i级扫描信号线SCAN（i）连接，阳极复位晶体管M7的漏极D7与初始化晶体管M4的漏极D4以及初始化信号线VI连接，阳极复位晶体管M7的源极S7与有机发光二极管OLED的阳极以及第二发光控制晶体管M6的漏极D6连接。阳极复位晶体管M7根据第i级扫描信号线SCAN（i）传输的第i级扫描信号导通或截止，控制初始化信号线VI传输的初始化信号是否写入至有机发光二极管OLED的阳极。\n\n[0044]电容器C的第一极板C1与驱动晶体管M1的栅极G1、初始化晶体管M4的源极S4以及补偿晶体管M3的漏极D3连接，电容器C的第二极板C2与直流电源信号线VDD以及第一发光控制晶体管M5的源极S5连接。电容器C用于维持驱动晶体管M1驱动有机发光二极管OLED发光时驱动晶体管M1的栅极的电压。\n\n[0045]请结合图6，在初始化阶段t1，第i-1级扫描信号线SCAN（i-1）输入低电平的第i-1级扫描信号，初始化晶体管M4导通，初始化信号线VI传输的初始化信号传输至驱动晶体管M1的栅极G1，实现对驱动晶体管M1的栅极G1的初始化；第i级扫描信号线SCAN（i）输入高电平的第i级扫描信号，开关晶体管M2、补偿晶体管M3以及阳极复位晶体管M7均截止；第i级发光控制信号线EM（i）输入高电平的第i级发光控制信号，第一发光控制晶体管M5和第二发光控制晶体管M6均截止。\n\n[0046]在阈值电压补偿及数据电压写入阶段t2，第i-1级扫描信号线SCAN（i-1）输入高电平的第i-1级扫描信号，初始化晶体管M4截止；第i级扫描信号线SCAN（i）输入低电平的第i级扫描信号，开关晶体管M2、补偿晶体管M3以及阳极复位晶体管M7均导通，导通的补偿晶体管M3使驱动晶体管M1的栅极G1和驱动晶体管M1的漏极D1电性连接，导通的开关晶体管M2将数据线D(j)传输的数据信号写入至驱动晶体管M1的源极S1，导通的阳极复位晶体管M7将初始化信号线VI传输的初始化信号输出至有机发光二极管OLED的阳极，实现驱动晶体管M1的阈值电压的补偿、数据信号的写入以及有机发光二极管OLED的阳极的初始化；第i级发光控制信号线EM（i）输入高电平的第i级发光控制信号，第一发光控制晶体管M5和第二发光控制晶体管M6均截止。\n\n[0047]在发光阶段t3，第i-1级扫描信号线SCAN（i-1）输入高电平的第i-1级扫描信号，初始化晶体管M4截止；第i级扫描信号线SCAN（i）输入高电平的第i级扫描信号，开关晶体管M2、补偿晶体管M3以及阳极复位晶体管M7均截止；第i级发光控制信号线EM（i）输入低电平的第i级发光控制信号，第一发光控制晶体管M5和第二发光控制晶体管M6均导通，驱动晶体管M1导通且输出驱动电流，有机发光二极管OLED发光。\n\n[0048]请结合图7，显示装置包括图案化有源层1041、图案化第一金属层1042、图案化第二金属层1043、图案化第三金属层1044，图案化第一金属层1042位于图案化有源层1041的一侧，图案化第二金属层1043位于图案化第一金属层1042远离图案化有源层1041的一侧，图案化第三金属层1044位于图案化第二金属层1043远离图案化第一金属层1042的一侧。图案化有源层1041和图案化第一金属层1042之间设置有第一绝缘层，图案化第一金属层1042和图案化第二金属层1043之间设置有第二绝缘层，图案化第二金属层1043和图案化第三金属层1044之间设置有第三绝缘层。图案化第一金属层1042、图案化第二金属层1043以及图案化第三金属层1044的制备材料包括但不限于钼、铝、钛以及铜中的至少一种。图案化第一金属层1042、图案化第二金属层1043以及图案化第三金属层1044均能反射光。第一绝缘层、第二绝缘层以及第三绝缘层均为无机绝缘层，无机绝缘层的制备材料选自氧化硅或氮化硅中的至少一种。\n\n[0049]图案化有源层1041包括第一像素驱动电路104的7个晶体管的沟道以及源漏电极。图案化第一金属层1042包括第i级扫描信号线SCAN（i）、第i-1级扫描信号线SCAN（i-1）、第i级发光控制信号线EM（i）以及电容器C的第一极板C1(驱动晶体管M1的栅极)。图案化第二金属层1043包括初始化信号线VI、金属屏蔽构件10431以及电容器C的第二极板C2。金属屏蔽构件10431与直流电源信号线VDD电性连接以导入直流电源信号。图案化第三金属层1044包括数据线D(j)、数据线D(j+1)、直流电源信号线VDD、第一初始化引线10441、第二初始化引线10442、栅极引线10443以及阳极引线10444。其中，第一初始化引线10441连接于初始化信号线VI以及初始化晶体管M4的漏极之间，第二初始化引线10442连接于初始化信号线VI以及阳极复位晶体管M7的漏极之间，栅极引线10443连接于第一极板C1以及补偿晶体管M3的漏极之间，阳极引线10444连接于有机发光二极管的阳极以及第二发光控制晶体管M6的漏极之间。\n\n[0050]多个第一像素驱动电路104由具有高反射率的金属层、低反射率的绝缘层以及低反射率的半导体层堆叠而成，且第一像素驱动电路104中的金属在一些区域分布密集而在另外一些区域分布稀疏，导致第一像素驱动电路104中存在高反射率区域以及低反射率区域，第一像素驱动电路104的低反射率区域的反射率小于第一像素驱动电路104的高反射率区域的反射率。多个第一像素驱动电路104包括多个低反射堆叠部，多个第一像素驱动电路104的多个低反射堆叠部的反射率小于多个第一像素驱动电路104除多个低反射堆叠部之外的部分的反射率。每个低反射堆叠部由组成第一像素驱动电路104的多个膜层堆叠而成。低反射堆叠部中的金属分布密度小于多个第一像素驱动电路104其他部分的金属分布密度。每个低反射堆叠部包括不设置金属的空白堆叠部。每个低反射堆叠部可以为完全不设置金属的空白堆叠部，也可以包括少量金属。低反射堆叠部在显示装置的基板上的正投影的形状为矩形、梯形或者不规则图形。\n\n[0051]具体地，如图7所示，多个第一像素驱动电路104包括呈阵列式分布的多个第一低反射堆叠部104a、多个第二低反射堆叠部104b以及多个第三低反射堆叠部104c。多个第一低反射堆叠部104a、多个第二低反射堆叠部104b以及多个第三低反射堆叠部104c均包括空白堆叠部，空白堆叠部位于不设置金属膜层的区域，即空白堆叠部中的金属在显示装置的基板上的正投影的面积等于0。其中，第一低反射堆叠部104a为相邻两个第一像素驱动电路104对应第一区域的部分，第一区域由相邻两个直流电源信号线VDD、第i级发光控制信号线EM（i）以及与第i级发光控制信号线EM（i）相邻的初始化信号线VI围合而成，第一低反射堆叠部104a包括数据线D（j+1）的部分。第二低反射堆叠部104b为相邻两个第一像素驱动电路104对应第二区域的部分，第二区域由相邻两个直流电源信号线VDD、第i-1级扫描信号线SCAN（i-1）、与第i-1级扫描信号线SCAN（i-1）相邻的第i级扫描信号线SCAN（i）以及位于第i-1级扫描信号线SCAN（i-1）和第i级扫描信号线SCAN（i）之间的金属屏蔽构件10431围合而成。第二低反射堆叠部104b也包括数据线D（j+1）的部分。第三低反射堆叠部104c为相邻两个第一像素驱动电路104对应第三区域的部分，第三区域由第i级发光控制信号线EM（i）、与第i级发光控制信号线EM（i）相邻的第i级扫描信号线SCAN（i）、数据线D(j+1)以及靠近数据线D(j+1)的图案化有源层1041围合而成。第三低反射堆叠部104c不包括金属。第一低反射堆叠部104a、第二低反射堆叠部104b以及第三低反射堆叠部104c均为矩形。相邻两个第一像素驱动电路104中，一个第三低反射堆叠部104c设置在一个第一低反射堆叠部104a以及第二低反射堆叠部104b之间。\n\n[0052]每个第一低反射堆叠部104a中的空白堆叠部在显示装置的基板上的正投影的面积大于每个第二低反射堆叠部104b中的空白堆叠部在基板上的正投影的面积，每个第二低反射堆叠部104b中的空白堆叠部在基板上的正投影的面积大于每个第三低反射堆叠部104c中的空白堆叠部在基板上的正投影的面积。主显示区100c除了多个第一低反射堆叠部104a的空白堆叠部、多个第二低反射堆叠部104b的空白堆叠部以及多个第三低反射堆叠部104c的空白堆叠部的反射率很低之外，其他区域的反射率由于布设金属层导致反射率较高。\n\n[0053]结合图2以及图3，多个第二显示像素均匀地设置于显示透光区100a和过渡显示区100b。每个第二显示像素包括第二红色子像素100a1、第二绿色子像素100a3以及第二蓝色子像素100a2。第二红色子像素100a1、第二绿色子像素100a3以及第二蓝色子像素100a2在显示透光区100a和过渡显示区100b均呈Pentile设计分布。第二红色子像素100a1、第二绿色子像素100a3以及第二蓝色子像素100a2的形状均为圆形。第二红色子像素100a1、第二绿色子像素100a3以及第二蓝色子像素100a2均包括有机发光二极管。\n\n[0054]第一红色子像素100c1的尺寸大于第二红色子像素100a1的尺寸，第一绿色子像素100c3的尺寸大于第二绿色子像素100a3的尺寸，第一蓝色子像素100c2的尺寸大于第二蓝色子像素100a2的尺寸，以保证显示透光区100a具有高透光率。由于一个第二红色子像素100a1与一个第一红色子像素100c1的尺寸不同，两者对应的驱动电路的驱动功率也不同，同理，第一绿色子像素100c3与第二绿色子像素100a3对应的驱动电路的驱动功率也不同，且第一蓝色子像素100c2与第二蓝色子像素100a2对应的驱动电路的驱动功率也不同。故第一像素驱动电路104只能用于驱动主显示区100c的第一红色子像素100c1、第一绿色子像素100c3以及第一蓝色子像素100c2，而不能用于驱动过渡显示区100b和显示透光区100a的第二红色子像素100a1、第二绿色子像素100a3以及第二蓝色子像素100a2。\n\n[0055]从主显示区100c到过渡显示区100b，子像素的尺寸变小，为了从主显示区100c到过渡显示区100b显示能均匀地过渡，避免显示时主显示区100c和过渡显示区100b之间的交界处出现明显的分界线，多个第一红色子像素100c1、多个第一绿色子像素100c3以及多个第一蓝色子像素100c2在主显示区100c和过渡显示区100b的交界处呈台阶形分布，且多个第二红色子像素100a1、多个第二绿色子像素100a3以及多个第二蓝色子像素100a2在主显示区100c和过渡显示区100b的交界处呈台阶形分布。\n\n[0056]如图8所示，图8为图1所示显示装置的主显示区、过渡显示区以及显示透光区的局部放大示意图，图9为图8中像素驱动电路岛的示意图，图10为像素驱动电路岛中的第二像素驱动电路的平面示意图。\n\n[0057]结合图4、图8以及图9可知，多个第二像素驱动电路1011设置于过渡显示区100b，多个第二像素驱动电路1011组成多个像素驱动电路岛101。多个像素驱动电路岛101环绕显示透光区100a分布，以使多个像素驱动电路岛101适应显示透光区100a的形状设置，减少多个像素驱动电路岛101中的第二像素驱动电路1011与对应的子像素之间的间距，从而减小连接第二像素驱动电路1011与对应子像素的导线的阻抗，提高第二显示像素的发光的均一性。\n\n[0058]具体地，多个像素驱动电路岛101包括第一组像素驱动电路岛101a和第二组像素驱动电路岛101b，第一组像素驱动电路岛101a中的像素驱动电路岛101呈弧形分布，第二组像素驱动电路岛101b中的像素驱动电路岛101呈弧形分布，第一组像素驱动电路岛101a中的像素驱动电路岛101与第二组像素驱动电路岛101b中的像素驱动电路岛101关于第二对称轴B-B对称设置。第一组像素驱动电路岛101a中的像素驱动电路岛101关于第一对称轴A-A对称设置。第二组像素驱动电路岛101b中的像素驱动电路岛101关于第一对称轴A-A对称设置。\n\n[0059]每个像素驱动电路岛101呈矩形。每个像素驱动电路岛101包括多个阵列排布的第二像素驱动电路1011，多个像素驱动电路岛101的第二像素驱动电路1011用于驱动多个第二显示像素发光，即多个像素驱动电路岛101的第二像素驱动电路1011用于驱动过渡显示区100b的第二显示像素发光的同时，还用于驱动显示透光区100a的第二显示像素发光，以避免显示透光区100a设置像素驱动电路，避免第二像素驱动电路1011的金属膜层对显示透光区100a的透光率造成影响，从而进一步地提高显示透光区100a的透光率。\n\n[0060]每个第二像素驱动电路1011的等效电路图与图5所示的第一像素驱动电路的等效电路图相同，不同之处在于，第二像素驱动电路1011的驱动功率与第一像素驱动电路104的驱动功率不同，对应地，第二像素驱动电路1011与第一像素驱动电路104之间的差异包括两者的尺寸不同，且两者内部的器件以及走线的大小存在差异。\n\n[0061]请参阅图10，其为像素驱动电路岛中的第二像素驱动电路及第二像素驱动电路正上方的图案化第四金属层的平面示意图。每个第二像素驱动电路的平面示意图与第一像素驱动电路的平面示意图基本相似，不同之处在于两者的布设间距等存在差异。第二像素驱动电路1011与第一像素驱动电路104的区别还包括，第二像素驱动电路1011与第n-1级扫描信号线Scan(n-1)、第n级扫描信号线Scan(n)以及第n级发光控制信号线EM（n）连接。第n-1级扫描信号线Scan(n-1)在第二像素驱动电路1011中的位置对应第i-1级扫描信号线Scan(i-1)在第一像素驱动电路104中的位置，第n级扫描信号线Scan(n)在第二像素驱动电路1011中的位置对应第i级扫描信号线Scan(i)在第一像素驱动电路104中的位置，第n级发光控制信号线EM（n）在第二像素驱动电路1011中的位置对应第i级发光控制信号线EM(i)在第一像素驱动电路104中的位置。\n\n[0062]结合图10可知，显示装置还包括图案化第四金属层1045，图案化第四金属层1045位于图案化第三金属层1044远离图案化第二金属层1043的一侧，图案化第四金属层1045与图案化第三金属层1044之间设置有第四绝缘层。图案化第四金属层1045包括金属网格10451，金属网格10451用于传输直流电源信号，部分金属网格10451设置于主显示区100c，部分金属网格10451对应多个像素驱动电路岛101的多个第二像素驱动电路1011设置。金属网格10451包括多个纵向金属线和横向金属线，且金属网格10451呈网格状，金属网格10451与图案化第三金属层1044中的直流电源信号线VDD电性连接，以传输直流电源信号，改善直流电源信号在传输过程中的电阻压降。图案化第四金属层1045的制备材料为钼、铝、钛以及铜中的至少一种。第四绝缘层为有机绝缘层。像素驱动电路岛101中的第二像素驱动电路1011与显示透光区100a的第二显示像素通过透明导线电性连接，以进一步地提高显示透光区100a的透光率。透明导线的制备材料选自氧化铟锡或氧化铟锌中的至少一种。像素驱动电路岛101中的第二像素驱动电路1011与过渡显示区100b的第二显示像素可以通过金属导线电性连接。\n\n[0063]与主显示区100c中不同，一个第二像素驱动电路1011用于驱动多个第二红色子像素100a1、多个第二绿色子像素100a3以及多个第二蓝色子像素100a2中的至少两个，以减少第二像素驱动电路1011的数目，减少多个像素驱动电路岛101占用的空间，从而使得显示透光区100a的尺寸可以增大或者过渡显示区100b具有更多的空间。第二像素驱动电路1011可以用于驱动多个第二红色子像素100a1、多个第二绿色子像素100a3以及多个第二蓝色子像素100a2中发出色光相同的子像素和/或发出色光不同的子像素。在显示透光区100a，为同一个第二像素驱动电路1011驱动的子像素通过透明导线电性连接。\n\n[0064]具体地，相邻两个第二红色子像素100a1为同一个第二像素驱动电路1011驱动，相邻两个第二蓝色子像素100a2为同一个第二像素驱动电路1011驱动，且相邻四个第二绿色子像素100a3为同一个第二像素驱动电路1011驱动。\n\n[0065]请参阅图8，多个第一信号线102从主显示区100c延伸至过渡显示区100b，且多个第二信号线103从主显示区100c延伸至过渡显示区100b，多个第一信号线102和多个第二信号线103不设置于显示透光区100a。多个第一信号线102和多个第二信号线103的制备材料均为金属，金属包括但不限于钼、铝、钛以及铜。其中，多个第一信号线102以及多个第二信号线103不设置于显示透光区100a，使得显示透光区100a具有高透光率。\n\n[0066]具体地，第一信号线102为数据线，例如上述数据线D（n）等，数据线用于传输数据信号。第二信号线103选自扫描线、复位线以及发光控制信号线中的至少一种，例如上述扫描信号线Scan(n)以及初始化信号线VI等。其中，扫描线用于传输扫描信号，复位线用于传输复位信号和/或初始化信号，发光控制信号线用于传输发光控制信号。\n\n[0067]每个第一信号线102包括第一连接段1021，多个第一信号线102的第一连接段1021连接多个像素驱动电路岛101，以使数据信号传输至多个像素驱动电路岛101的第二像素驱动电路1011，多个第一信号线102的第一连接段1021设置于多个像素驱动电路岛101和显示透光区100a之间。相对于多个第一信号线102的第一连接段1021设置于多个像素驱动电路岛101的外围或者相对两侧，多个第一信号线102的第一连接段1021设置于多个像素驱动电路岛101和显示透光区100a之间，使得多个第一信号线102的第一连接段1021的长度减小，避免多个第一信号线102的第一连接段1021的长度过长导致阻抗差异较大，进而导致主显示区100c的子像素存在显示不均的问题。\n\n[0068]具体地，每个第一信号线102的第一连接段1021连接于第一组像素驱动电路岛101a中的像素驱动电路岛101和第二组像素驱动电路岛101b中对应的像素驱动电路岛101之间，使得数据信号在第一组像素驱动电路岛101a中的像素驱动电路岛101和第二组像素驱动电路岛101b中对应的像素驱动电路岛101之间传输。\n\n[0069]每个第一信号线102还包括第一过渡段1022，多个第一信号线102的第一过渡段1022设置于多个像素驱动电路岛101和主显示区100c之间，且与多个像素驱动电路岛101连接。一方面，多个第一信号线102的第一过渡段1022设置于多个像素驱动电路岛101和主显示区100c之间，每个第一信号线102的第一过渡段1022的布设需要占用多个像素驱动电路岛101和主显示区100c之间的空间，以完成第一信号线102从主显示区100c至过渡显示区100b之间的过渡。另一方面，多个像素驱动电路岛101更加靠近显示透光区100a的中心位置设置，保证对应显示透光区100a中心位置第二显示像素的像素驱动电路岛101中的第二像素驱动电路1011能驱动中心位置处的第二显示像素。\n\n[0070]至少部分第一过渡段1022包括扇形区段10221和与扇形区段10221连接的直线区段10222，多个第一过渡段1022的扇形区段10221聚集且呈扇形分布，收窄成一组第一信号线102，且通过多个第一过渡段1022的直线区段10222与像素驱动电路岛101连接。\n\n[0071]延伸至过渡显示区100b的第二信号线103分成多组，每组串接对应的像素驱动电路岛101，以使控制信号（扫描信号、发光控制信号、初始化信号、复位信号）传输至相互串接的像素驱动电路岛101。每个第二信号线103包括连接第一组像素驱动电路岛101a和第二组像素驱动电路岛101b中相邻两个像素驱动电路岛101的第二连接段1031，第二连接段1031可以为直线、折线或者弧形。每个第二信号线103还包括第二过渡段1032，多个第二信号线103的第二过渡段1032设置于多个像素驱动电路岛101和主显示区100c之间，其中，第二过渡段1032是主显示区100c的第二信号线103经过换线得到。\n\n[0072]在过渡显示区100b，由于多个第二像素驱动电路1011组成多个像素驱动电路岛101，每个像素驱动电路岛101是与多个第一信号线102中的至少两个电性连接，且与多个第二信号线103中的至少两个电性连接，使得多个第一信号线102延伸至过渡显示区100b时需要调整且分为多组第一信号线102，每组第一信号线102与一个像素驱动电路岛101连接，且多个第二信号线103延伸至过渡显示区100b时需要换线且分为多组，每组第二信号线103串接多个像素驱动电路岛101。\n\n[0073]基于大量的探索与研究，发明人发现显示装置在息屏且强光照射条件下，过渡显示区100b和主显示区100c之间出现明显的分界，原因是由于过渡显示区100b和主显示区100c的单位面积的金属覆盖面积不同，导致过渡显示区100b和主显示区100c对光的反射率不同，主显示区100c的单位面积的金属覆盖面积较大，过渡显示区100b的单位面积的金属覆盖面积相对较小，且过渡显示区100b的单位面积的金属覆盖面积较小的原因是因为多个第二像素驱动电路1011之间的间隙处金属覆盖面积较小，具体为，过渡显示区100b中多个像素驱动电路岛101之外的区域的反射率较低。基于此，本申请在显示装置的过渡显示区100b设置有金属反射部105，且金属反射部105至少位于多个第二像素驱动电路1011之间的间隙，提高多个第二像素驱动电路1011之间的间隙处的反射率，以使过渡显示区100b和主显示区100c的单位面积金属覆盖面积接近，进而使得过渡显示区100b和主显示区100c的反射率接近，避免显示装置在息屏且强光照射条件下主显示区100c和过渡显示区100b之间出现明显的分界。\n\n[0074]金属反射部105可以为上述图案化第一金属层1042、上述图案化第二金属层1043、上述图案化第三金属层1044、上述图案化第四金属层1045中任一者的部分或者多者的组合，金属反射部105也可以为上述四个图案化金属层之外新增加的金属膜层。\n\n[0075]金属反射部105传输直流电压信号，直流电压信号选自初始化信号或者电源信号中的一种，以避免金属反射部105处于浮置状态。初始化信号为上述初始化信号线VI传输的信号。电源信号可以为直流电源信号VDD等。\n\n[0076]具体地，直流电压信号为输入至多个第一像素驱动电路104和/或多个第二像素驱动电路1011的电源信号。\n\n[0077]如图12及图13所示，图12为显示装置的第一种截面示意图，图13为镂空部在金属反射部中的位置对应部分低反射堆叠部在多个第一像素驱动电路中的位置的示意图。显示装置包括设置于过渡显示区100b的驱动晶体管M1、第二发光控制晶体管M6、电容器、栅极引线10443、直流电源信号线VDD、第一阳极引线10444、第二阳极引线10452、金属网格10451以及金属反射部105。显示装置还包括设置于显示透光区100a的有机发光二极管OLED。\n\n[0078]驱动晶体管M1包括设置于基板111上的驱动有源层，驱动有源层为上述图案化有源层1041的一部分，驱动有源层包括驱动沟道M11a、驱动源极M11b以及驱动漏极M11c，驱动源极M11b以及驱动漏极M11c是半导体通过掺杂后导体化得到。驱动晶体管M1还包括驱动栅极M12，驱动栅极M12对应驱动沟道M11a设置，驱动栅极M12也是电容器的下极板C1。驱动栅极M12为上述图案化第一金属层1042的一部分。驱动栅极M12和驱动有源层之间设置有第一绝缘层106。\n\n[0079]第二发光控制晶体管M6包括第二发光控制有源层以及第二发光控制栅极，第二发光控制有源层与驱动有源层同层设置，第二发光控制有源层包括第二发光控制沟道M61a、第二发光控制源极M61b以及第二发光控制漏极M61c。第二控制栅极与驱动栅极M12同层设置且对应第二发光控制沟道M61a设置。\n\n[0080]电容器包括上极板C2以及下极板C1，上极板C2和下极板C1之间设置有第二绝缘层107，且上极板C2与下极板C1对应设置。上极板C2为上述图案化第二金属层1043的一部分。\n\n[0081]栅极引线10443位于上极板C2的正上方，栅极引线10443为上述图案化第三金属层1044的一部分，栅极引线10443与上极板C2之间设置有第三绝缘层108，栅极引线10443通过贯穿第三绝缘层108、上极板C2、第二绝缘层107的过孔与下极板C1电性连接，以实现与驱动晶体管M1的栅极M12电性连接。\n\n[0082]第一阳极引线10444与栅极引线10443以及直流电源信号线VDD同层设置。第一阳极引线10444为上述图案化第三金属层1044的一部分，第一阳极引线10444与第二发光控制晶体管M6的第二发光控制漏极M61c通过贯穿第三绝缘层108、第二绝缘层107以及第一绝缘层106的过孔电性连接。\n\n[0083]第二阳极引线10452为图案化第四金属层1045的一部分，第二阳极引线10452与金属网格10451同层设置。第二阳极引线10452与第一阳极引线10444之间设置有第四绝缘层109，第二阳极引线10452通过第四绝缘层109上的过孔与第一阳极引线10444电性连接。\n\n[0084]多个透明导线1046设置于多个第二像素驱动电路1011的上方，多个透明导线1046连接于第二阳极引线10452和有机发光二极管OLED的阳极1047之间。部分透明导线1046设置在过渡显示区100b，且部分透明导线1046从过渡显示区100b延伸至显示透光区100a，以使过渡显示区100b的第二像素驱动电路1011驱动显示透光区100a的子像素，提高显示透光区100a的透光率。透明导线1046与图案化第四金属层1045之间设置有第五绝缘层110，第五绝缘层110为有机绝缘层。透明导线1046位于不同膜层时，相邻膜层上的透明导线1046之间也设置有有机绝缘层。每个透明导线1046的宽度大于或等于1微米，且同一层的相邻透明导线1046之间的间距大于或等于2微米，避免透明导线1046之间短路。\n\n[0085]金属反射部105与金属网格10451同层设置，且金属反射部105与金属网格10451连接。金属反射部105与金属网格10451通过同一图案化制程得到。由于图案化第一金属层1042、图案化第二金属层1043以及图案化第三金属层1044主要用于布设驱动电路的器件或者走线，导致这些膜层设置特定形态的金属反射部的空间受限，而图案化第四金属层1045中具有足够的空间布设金属反射部105。利用与金属网格10451同层的金属反射部105作为反射层，相较于利用过渡显示区100b的第一信号线102以及第二信号线103进行反射，可以减少去除部分第四金属层的制程，有利于简化制程，且第一信号线102以及第二信号线103的布设主要考虑信号的传输以及减少阻抗等问题，不是考虑反射。金属反射部105可以为Ti层/Al层/Ti层，金属反射部105也可以为Mo层。\n\n[0086]金属网格10451位于多个电源直流信号线VDD的上方。由于金属网格10451与电源直流信号线VDD电性连接，使得金属反射部105与多个电源直流信号线VDD电性连接，从而使得金属反射部105传输直流电压信号，避免金属反射部105不接入电信号而出现浮置进而影响电路工作，且金属反射部105传输直流电源信号进一步地改善直流电源信号传输过程中的电阻压降。\n\n[0087]金属反射部105包括至少一个镂空部，以使金属反射部105的镂空部处的反射率较低而金属反射部105其他位置的反射率高，过渡显示区100b的金属反射部105与主显示区100c的多个第一像素驱动电路104均具有高反射率区和低反射率区，有利于两者的反射率趋于相同，改善显示装置在息屏且强光照射下时出现的分界问题。金属反射部105属于同一个膜层时，镂空部可以位于同一个膜层。金属反射部105位于不同的膜层时，镂空部可以位于一个或多个膜层。\n\n[0088]金属反射部105包括多个镂空部，多个镂空部在金属反射部105中的位置对应部分低反射堆叠部在多个第一像素驱动电路104中的位置，以使金属反射部105中的反射率分布情况与多个第一像素驱动电路104中的反射率分布情况趋于相同。多个镂空部在金属反射部105中的位置对应部分低反射堆叠部在多个第一像素驱动电路104中的位置是指多个镂空部在金属反射部105中的位置与部分低反射堆叠部在多个第一像素驱动电路104中的位置相同，多个镂空部与部分低反射堆叠部可以如图13所示并排设置，也可以多个镂空部与部分低反射堆叠部错开设置。\n\n[0089]至少一个镂空部与部分低反射堆叠部并排设置，以使具有低反射率的镂空部在金属反射部105中的位置分布与具有低反射率的低反射堆叠部在多个第一像素驱动电路104中的位置分布趋于相同，金属反射部105的反射率分布与多个第一像素驱动电路104的反射率分布趋于相同，进一步地改善显示装置在息屏且强光照射下时出现的分界问题。\n\n[0090]并排设置的镂空部和低反射堆叠部中，低反射堆叠部在显示装置的基板111上的正投影的形状与镂空部在显示装置的基板111上的正投影的形状相同或相似，以进一步地使金属反射部105的反射率与多个第一像素驱动电路104的反射率趋于相同。\n\n[0091]并排设置的镂空部和低反射堆叠部中，镂空部在显示装置的基板111上的正投影的面积等于低反射堆叠部在显示装置的基板111上的正投影的面积，以进一步地使金属反射部105的反射率与多个第一像素驱动电路104的反射率趋于相同。\n\n[0092]至少一个镂空部在显示装置的基板111上的正投影的形状选自矩形、梯形以及不规则图形中的至少一种。形状为矩形、梯形等规则图形时，更容易在制程上实现图案化；形状为不规则图形时，更有利于镂空部在显示装置的基板111上的正投影的形状与低反射堆叠部在基板111上的正投影的形状匹配。\n\n[0093]并排设置的镂空部和低反射堆叠部中，相邻两个镂空部之间的间距等于相邻两个低反射堆叠部之间的间距。\n\n[0094]具体地，至少一个镂空部105包括第一镂空部1051a、第二镂空部1051b以及第三镂空部1051c，第一镂空部1051a的面积大于第二镂空部1051b的面积，第二镂空部1051b的面积大于第三镂空部1051c的面积；第一低反射堆叠部104a与第一镂空部1051a并排设置，第二低反射堆叠部104b与第二镂空部1051b并排设置，第三低反射堆叠部104c与第三镂空部1051c并排设置。第一镂空部1051a、第二镂空部1051b以及第三镂空部1051c的形状均为矩形，有利于简化制程。可以理解的是，第一镂空部1051a、第二镂空部1051b以及第三镂空部1051c的形状也可以根据第一低反射堆叠部104a、第二低反射堆叠部104b以及第三低反射堆叠部104c中空白堆叠部的形状进行调节。需要说明的是，图13中第一低反射堆叠部104a、第二低反射堆叠部104b以及第三低反射堆叠部104c中的部分金属未示意出，实际第一低反射堆叠部104a、第二低反射堆叠部104b以及第三低反射堆叠部104c如图7所示。\n\n[0095]通过在过渡显示区100b除多个像素驱动电路岛101之外的区域设置金属反射部105，金属反射部105的反射率分布与主显示区100c的反射率分布相近，有利于避免主显示区105和过渡显示区100b之间出现明显的反射率分布差异。\n\n[0096]结合图4以及图11可知，部分金属反射部105环绕多个像素驱动电路岛101且设置于多个像素驱动电路岛101和主显示区100c之间，部分金属反射部105设置于多个像素驱动电路岛101与显示透光区100a之间，部分金属反射部105设置于相邻两个像素驱动电路岛101之间，使得过渡显示区100b除设置有多个像素驱动电路岛101的区域的之外所有区域均设置有金属反射部105。\n\n[0097]金属反射部105靠近显示透光区100a的边界包括弧形边界，金属反射部105靠近主显示区100c的边界包括台阶形边界，以适应过渡显示区100b与显示透光区100a之间的边界为圆形且过渡显示区100b与主显示区100c之间的边界为台阶形，使得交界处的反射率与其他位置的反射率相匹配。\n\n[0098]金属反射部105中的金属在显示装置的基板111上的正投影在单位面积的占比与多个第一像素驱动电路104中的金属在显示装置的基板111上的正投影在单位面积的占比之间的差值绝对值大于或等于0%且小于或等于6%，以使得过渡显示区100b的金属反射部105的反射率与主显示区100c的反射率接近，避免显示装置在息屏且强光照射状态下出现明显的分界效果。差值绝对值可以为1%、2%以及3%等。\n\n[0099]请参阅图14，其为显示装置的第二种截面示意图。图14所示显示装置与图12所示显示装置基板相似，不同之处在于，金属反射部105与多个有机发光二极管OLED的阳极1047同层设置，且金属反射部105与多个有机发光二极管OLED的阳极1047之间绝缘，以使得过渡显示区100b和主显示区100c的反射率接近。金属反射部105与多个有机发光二极管OLED的阳极1047通过同一制程图案化制备得到。金属反射部105为氧化铟锡层、银层以及氧化铟锡层的叠层。相较于金属反射部105设置于图案化第四金属层1045且接入直流电源信号，金属反射部105与阳极1047同层设置且不接入固定电压会导致金属反射部105处于浮置状态，增加金属反射部105影响电路正常工作的风险。\n\n[0100]金属反射部105与多个有机发光二极管OLED的阳极1047之间的间距大于或等于3微米，以避免金属反射部105与多个有机发光二极管OLED的阳极1047之间出现短路。\n\n[0101]本申请还提供一种电子设备，电子设备包括上述显示装置及感光单元，感光单元对应显示装置的显示透光区100a设置。感光单元为摄像头。由于显示装置的显示透光区100a具有高透光率，可以保证摄像头的拍照效果；且显示装置的显示透光区100a具有第二显示像素，显示透光区100a也可以进行显示。另外，通过至少在过渡显示区100b的多个第二像素驱动电路1011之间的间隙设置金属反射部105，避免电子设备在息屏且强光照射条件下主显示区100c和过渡显示区100b之间出现明显的分界问题。\n\n[0102]以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种显示装置及电子设备。\n\n背景技术\n\n[0002]如图1所示，其为传统有机发光二极管显示面板（Active Metrix Organic LightEmitting Diode，AMOLED）的示意图。有机发光二极管显示面板包括正常显示区A、过渡显示区B以及透光显示区C，过渡显示区B位于透光显示区C和正常显示区A之间。在过渡显示区B设置有多个像素驱动电路以及对应的金属信号线，位于过渡显示区B的部分像素驱动电路用于驱动透光显示区C中的显示像素，且过渡显示区B中驱动透光显示区C中显示像素的像素驱动电路与透光显示区C中的显示像素之间通过透明导线电性连接，使得透光显示区C中显示像素对应的像素驱动电路及对应的金属信号线设置于透光显示区C之外，保证透光显示区C的透光率，使透光显示区C具有摄像以及显示的双重功能。另外，在正常显示区A中设置有多个阵列排布的显示像素以及对应的像素驱动电路，以实现显示。然而，在有机发光二极管显示面板处于息屏状态时，且在强光照射有机发光显示面板的条件下，过渡显示区与正常显示区之间会出现明显的分界问题。\n\n[0003]因此，有必要提出一种技术方案以解决过渡显示区和正常显示区在显示面板处于息屏且强光照射的条件下会出现明显分界的问题。\n\n发明内容\n\n[0004]本申请的目的在于提供一种显示面板及电子设备，以解决过渡显示区和正常显示区在显示面板处于息屏且强光照射的条件下会出现明显分界的问题。\n\n[0005]为实现上述目的，本申请提供一种显示装置，所述显示装置具有主显示区、过渡显示区以及显示透光区，所述过渡显示区位于所述主显示区和所述显示透光区之间，所述显示装置包括：\n\n[0006]多个第一显示像素，设置于所述主显示区；\n\n[0007]多个第二显示像素，设置于所述过渡显示区和所述显示透光区；\n\n[0008]多个第一像素驱动电路，阵列地设置于所述主显示区，且用于驱动多个所述第一显示像素；\n\n[0009]多个第二像素驱动电路，设置于所述过渡显示区，且用于驱动多个所述第二显示像素；以及\n\n[0010]金属反射部，设置于所述过渡显示区，且所述金属反射部至少位于多个所述第二像素驱动电路之间的间隙。\n\n[0011]本申请还提供一种电子设备，所述电子设备包括上述显示装置及感光单元，所述感光单元对应所述显示装置的所述显示透光区设置。\n\n[0012]有益效果：本申请提供一种显示装置及电子设备，通过在过渡显示区中多个第二像素驱动电路之间的间隙设置金属反射部，以使得过渡显示区的反射率与主显示区的反射率接近，避免主显示区和过渡显示区在息屏且强光照射下出现明显的分界效果。\n\n附图说明\n\n[0013]图1为传统有机发光二极管显示面板的示意图；\n\n[0014]图2为本申请实施例显示装置的平面示意图；\n\n[0015]图3为图2所示显示装置中第一显示像素和第二显示像素的分布示意图；\n\n[0016]图4为图2所示显示装置的局部放大示意图；\n\n[0017]图5为图4所示第一像素驱动电路的等效电路图；\n\n[0018]图6为第一像素驱动电路对应的驱动时序图；\n\n[0019]图7为相邻两个第一像素驱动电路的平面示意图；\n\n[0020]图8为图2所示显示装置的主显示区、过渡显示区以及显示透光区的局部放大示意图；\n\n[0021]图9为图8中像素驱动电路岛的示意图；\n\n[0022]图10为像素驱动电路岛中的第二像素驱动电路及第二像素驱动电路正上方图案化第四金属层的平面示意图；\n\n[0023]图11为显示装置的过渡显示区设置金属反射部的局部放大示意图；\n\n[0024]图12为显示装置的第一种截面示意图；\n\n[0025]图13为镂空部在金属反射部中的位置对应部分低反射堆叠部在多个第一像素驱动电路中的位置的示意图；\n\n[0026]图14为显示装置的第二种截面示意图。\n\n具体实施方式\n\n[0027]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0028]本申请提供一种显示装置100，显示装置100可以为液晶显示装置，也可以为有机发光二极管显示装置。具体地，显示装置100为有机发光二极管显示装置。\n\n[0029]请参阅图2及图3，图2为本申请实施例显示装置的平面示意图，图3为图2所示显示装置中第一显示像素和第二显示像素的分布示意图。显示装置100具有显示透光区100a、主显示区100c以及过渡显示区100b。显示装置100包括多个第一显示像素、多个第一像素驱动电路104、多个第二显示像素、多个像素驱动电路岛101、多个第一信号线102、多个第二信号线103以及金属反射部105。\n\n[0030]过渡显示区100b设置于显示透光区100a和主显示区100c之间。主显示区100c和过渡显示区100b均用于显示。显示透光区100a用于显示的同时，还具有高透光特性。显示透光区100a的透光率大于主显示区100c和过渡显示区100b的透光率。主显示区100c的面积大于过渡显示区100b的面积以及显示透光区100a的面积。\n\n[0031]显示透光区100a具有弧形边界，显示透光区100a的形状为椭圆形、圆形、倒角正方形或者其他形状。过渡显示区100b为环形。过渡显示区100b为椭圆环形、圆环形或者正方环形中的任意一种。\n\n[0032]具体地，显示透光区100a为圆形。显示透光区100a关于第一对称轴A-A和第二对称轴B-B对称设置，第一对称轴A-A与第二对称轴B-B垂直。过渡显示区100b为环形，过渡显示区100b靠近显示透光区100a的边界为圆形，过渡显示区100b靠近主显示区100c的边界呈台阶形。\n\n[0033]如图3所示，多个第一显示像素均匀地设置于主显示区100c，每个第一显示像素包括第一红色子像素100c1、第一绿色子像素100c3以及第一蓝色子像素100c2。第一红色子像素100c1、第一绿色子像素100c3以及第一蓝色子像素100c2在主显示区100c呈Pentile设计分布。第一绿色子像素100c3的形状为椭圆形，第一红色子像素100c1和第一蓝色子像素100c2均呈八边形。第一显示像素的每个子像素包括有机发光二极管OLED。\n\n[0034]如图4所示，图4为图2所示显示装置的局部放大示意图，多个第一像素驱动电路104阵列地设置于主显示区100c。一个第一像素驱动电路104对应驱动主显示区100c的一个子像素（第一红色子像素100c1、第一绿色子像素100c3以及第一蓝色子像素100c2中的一个）发光。多个第一像素驱动电路104在主显示区100c和过渡显示区100b之间的交界处呈台阶形分布，以适应主显示区100c的第一显示像素的子像素在主显示区100c和过渡显示区100b之间的交界处呈台阶形分布。\n\n[0035]如图5-图6所示，图5为图4所示第一像素驱动电路的等效电路图，图6为第一像素驱动电路对应的驱动时序图，图7为相邻两个第一像素驱动电路的平面示意图。每个第一像素驱动电路包括驱动晶体管M1、开关晶体管M2、补偿晶体管M3、初始化晶体管M4、第一发光控制晶体管M5、第二发光控制晶体管M6、阳极复位晶体管M7以及电容器C，即第一像素驱动电路104为7T1C电路。驱动晶体管M1、开关晶体管M2、补偿晶体管M3、初始化晶体管M4、第一发光控制晶体管M5、第二发光控制晶体管M6以及阳极复位晶体管M7均为P型晶体管。\n\n[0036]显示装置100还包括多个与第一像素驱动电路104电性连接的走线，多个走线包括设置于主显示区100c的第i-1级扫描信号线SCAN（i-1）、第i级扫描信号线SCAN（i）、数据线D(j)、数据线D(j+1)、初始化信号线VI、直流电源信号线VDD以及第i级发光控制信号线EM（i）。第i-1级扫描信号线SCAN（i-1）用于传输第i-1级扫描信号。第i级扫描信号线SCAN（i）用于传输第i级扫描信号。数据线D(j)以及D(j+1)数据线用于传输数据信号。直流电源信号线VDD用于传输直流电源信号。第i级发光控制信号线EM（i）用于传输第i级发光控制信号。以下结合图5以及图6对相邻两个第一像素驱动电路104中与数据线D(j)连接的第一像素驱动电路104进行描述。\n\n[0037]驱动晶体管M1的栅极G1与电容器C的第一极板C1、补偿晶体管M3的漏极D3以及初始化晶体管M4的源极S4连接，驱动晶体管M1的源极S1通过第一发光控制晶体管M5与直流电源信号线VDD连接，且驱动晶体管M1的源极S1通过开关晶体管M2与数据线D(j)连接，驱动晶体管M1的漏极D1通过第二发光控制晶体管M6与有机发光二极管OLED连接。开关晶体管M2打开，驱动晶体管M1接收数据线D(j)传输的数据信号且为有机发光二极管OLED提供驱动电流。\n\n[0038]开关晶体管M2的栅极G2与第i级扫描信号线SCAN（i）连接，开关晶体管M2的源极S2与数据线D（j）连接，开关晶体管M2的漏极D2与驱动晶体管M1的源极S1连接，开关晶体管M2的漏极D2还通过第一发光控制晶体管M5与直流电源信号线VDD连接。开关晶体管M2根据第i级扫描信号线SCAN（i）传输的第i级扫描信号导通或截止，控制数据线D(j)传输的数据信号是否写入至驱动晶体管M1的源极S1。\n\n[0039]补偿晶体管M3的栅极G3与第i级扫描信号线SCAN（i）连接，补偿晶体管M3的源极S3与驱动晶体管M1的漏极D1连接，补偿晶体管M3的源极S3还通过第二发光控制晶体管M6与有机发光二极管OLED连接，补偿晶体管M3的漏极D3与驱动晶体管M1的栅极G1、初始化晶体管M4的源极S4以及电容器C的第一极板C1连接。补偿晶体管M3根据第i级扫描信号线SCAN（i）传输的第i级扫描信号导通或截止，电性连接驱动晶体管M1的栅极G1和驱动晶体管M1的漏极D1。\n\n[0040]初始化晶体管M4的栅极G4与第i-1级扫描信号线SCAN（i-1）连接，初始化晶体管M4的漏极D4与阳极复位晶体管M7的漏极D7以及初始化信号线VI连接，初始化晶体管M4的源极S4与驱动晶体管M1的栅极G1、补偿晶体管M3的漏极D3以及电容器C的第一极板C1连接。初始化晶体管M4根据第i-1级扫描信号线SCAN（i-1）传输的第i-1级扫描信号导通或截止，控制初始化信号线VI传输的初始化信号是否写入至驱动晶体管M1的栅极G1。\n\n[0041]第一发光控制晶体管M5的栅极G5与第i级发光控制信号线EM（i）连接，第一发光控制晶体管M5的源极S5与直流电源信号线VDD以及电容器C的第二极板C2连接，第一发光控制晶体管M5的漏极D5与驱动晶体管M1的源极S1以及开关晶体管M2的漏极D2连接。第一发光控制晶体管M5根据第i级发光控制信号线EM（i）传输的第i级发光控制信号导通或截止，控制直流电源信号线VDD传输的直流电源信号传输是否写入至驱动晶体管M1的源极S1。\n\n[0042]第二发光控制晶体管M6的栅极G6与第i级发光控制信号线EM（i）连接，第二发光控制晶体管M6的源极S6与驱动晶体管M1的漏极D1以及补偿晶体管M3的源极S3连接，第二发光控制晶体管M6的漏极D6与有机发光二极管OLED的阳极以及阳极复位晶体管M7的源极S7连接。第二发光控制晶体管M6根据第i级发光控制信号线EM（i）传输的第i级发光控制信号导通或截止，控制驱动电流是否流入到有机发光二极管OLED。\n\n[0043]阳极复位晶体管M7的栅极G7与第i级扫描信号线SCAN（i）连接，阳极复位晶体管M7的漏极D7与初始化晶体管M4的漏极D4以及初始化信号线VI连接，阳极复位晶体管M7的源极S7与有机发光二极管OLED的阳极以及第二发光控制晶体管M6的漏极D6连接。阳极复位晶体管M7根据第i级扫描信号线SCAN（i）传输的第i级扫描信号导通或截止，控制初始化信号线VI传输的初始化信号是否写入至有机发光二极管OLED的阳极。\n\n[0044]电容器C的第一极板C1与驱动晶体管M1的栅极G1、初始化晶体管M4的源极S4以及补偿晶体管M3的漏极D3连接，电容器C的第二极板C2与直流电源信号线VDD以及第一发光控制晶体管M5的源极S5连接。电容器C用于维持驱动晶体管M1驱动有机发光二极管OLED发光时驱动晶体管M1的栅极的电压。\n\n[0045]请结合图6，在初始化阶段t1，第i-1级扫描信号线SCAN（i-1）输入低电平的第i-1级扫描信号，初始化晶体管M4导通，初始化信号线VI传输的初始化信号传输至驱动晶体管M1的栅极G1，实现对驱动晶体管M1的栅极G1的初始化；第i级扫描信号线SCAN（i）输入高电平的第i级扫描信号，开关晶体管M2、补偿晶体管M3以及阳极复位晶体管M7均截止；第i级发光控制信号线EM（i）输入高电平的第i级发光控制信号，第一发光控制晶体管M5和第二发光控制晶体管M6均截止。\n\n[0046]在阈值电压补偿及数据电压写入阶段t2，第i-1级扫描信号线SCAN（i-1）输入高电平的第i-1级扫描信号，初始化晶体管M4截止；第i级扫描信号线SCAN（i）输入低电平的第i级扫描信号，开关晶体管M2、补偿晶体管M3以及阳极复位晶体管M7均导通，导通的补偿晶体管M3使驱动晶体管M1的栅极G1和驱动晶体管M1的漏极D1电性连接，导通的开关晶体管M2将数据线D(j)传输的数据信号写入至驱动晶体管M1的源极S1，导通的阳极复位晶体管M7将初始化信号线VI传输的初始化信号输出至有机发光二极管OLED的阳极，实现驱动晶体管M1的阈值电压的补偿、数据信号的写入以及有机发光二极管OLED的阳极的初始化；第i级发光控制信号线EM（i）输入高电平的第i级发光控制信号，第一发光控制晶体管M5和第二发光控制晶体管M6均截止。\n\n[0047]在发光阶段t3，第i-1级扫描信号线SCAN（i-1）输入高电平的第i-1级扫描信号，初始化晶体管M4截止；第i级扫描信号线SCAN（i）输入高电平的第i级扫描信号，开关晶体管M2、补偿晶体管M3以及阳极复位晶体管M7均截止；第i级发光控制信号线EM（i）输入低电平的第i级发光控制信号，第一发光控制晶体管M5和第二发光控制晶体管M6均导通，驱动晶体管M1导通且输出驱动电流，有机发光二极管OLED发光。\n\n[0048]请结合图7，显示装置包括图案化有源层1041、图案化第一金属层1042、图案化第二金属层1043、图案化第三金属层1044，图案化第一金属层1042位于图案化有源层1041的一侧，图案化第二金属层1043位于图案化第一金属层1042远离图案化有源层1041的一侧，图案化第三金属层1044位于图案化第二金属层1043远离图案化第一金属层1042的一侧。图案化有源层1041和图案化第一金属层1042之间设置有第一绝缘层，图案化第一金属层1042和图案化第二金属层1043之间设置有第二绝缘层，图案化第二金属层1043和图案化第三金属层1044之间设置有第三绝缘层。图案化第一金属层1042、图案化第二金属层1043以及图案化第三金属层1044的制备材料包括但不限于钼、铝、钛以及铜中的至少一种。图案化第一金属层1042、图案化第二金属层1043以及图案化第三金属层1044均能反射光。第一绝缘层、第二绝缘层以及第三绝缘层均为无机绝缘层，无机绝缘层的制备材料选自氧化硅或氮化硅中的至少一种。\n\n[0049]图案化有源层1041包括第一像素驱动电路104的7个晶体管的沟道以及源漏电极。图案化第一金属层1042包括第i级扫描信号线SCAN（i）、第i-1级扫描信号线SCAN（i-1）、第i级发光控制信号线EM（i）以及电容器C的第一极板C1(驱动晶体管M1的栅极)。图案化第二金属层1043包括初始化信号线VI、金属屏蔽构件10431以及电容器C的第二极板C2。金属屏蔽构件10431与直流电源信号线VDD电性连接以导入直流电源信号。图案化第三金属层1044包括数据线D(j)、数据线D(j+1)、直流电源信号线VDD、第一初始化引线10441、第二初始化引线10442、栅极引线10443以及阳极引线10444。其中，第一初始化引线10441连接于初始化信号线VI以及初始化晶体管M4的漏极之间，第二初始化引线10442连接于初始化信号线VI以及阳极复位晶体管M7的漏极之间，栅极引线10443连接于第一极板C1以及补偿晶体管M3的漏极之间，阳极引线10444连接于有机发光二极管的阳极以及第二发光控制晶体管M6的漏极之间。\n\n[0050]多个第一像素驱动电路104由具有高反射率的金属层、低反射率的绝缘层以及低反射率的半导体层堆叠而成，且第一像素驱动电路104中的金属在一些区域分布密集而在另外一些区域分布稀疏，导致第一像素驱动电路104中存在高反射率区域以及低反射率区域，第一像素驱动电路104的低反射率区域的反射率小于第一像素驱动电路104的高反射率区域的反射率。多个第一像素驱动电路104包括多个低反射堆叠部，多个第一像素驱动电路104的多个低反射堆叠部的反射率小于多个第一像素驱动电路104除多个低反射堆叠部之外的部分的反射率。每个低反射堆叠部由组成第一像素驱动电路104的多个膜层堆叠而成。低反射堆叠部中的金属分布密度小于多个第一像素驱动电路104其他部分的金属分布密度。每个低反射堆叠部包括不设置金属的空白堆叠部。每个低反射堆叠部可以为完全不设置金属的空白堆叠部，也可以包括少量金属。低反射堆叠部在显示装置的基板上的正投影的形状为矩形、梯形或者不规则图形。\n\n[0051]具体地，如图7所示，多个第一像素驱动电路104包括呈阵列式分布的多个第一低反射堆叠部104a、多个第二低反射堆叠部104b以及多个第三低反射堆叠部104c。多个第一低反射堆叠部104a、多个第二低反射堆叠部104b以及多个第三低反射堆叠部104c均包括空白堆叠部，空白堆叠部位于不设置金属膜层的区域，即空白堆叠部中的金属在显示装置的基板上的正投影的面积等于0。其中，第一低反射堆叠部104a为相邻两个第一像素驱动电路104对应第一区域的部分，第一区域由相邻两个直流电源信号线VDD、第i级发光控制信号线EM（i）以及与第i级发光控制信号线EM（i）相邻的初始化信号线VI围合而成，第一低反射堆叠部104a包括数据线D（j+1）的部分。第二低反射堆叠部104b为相邻两个第一像素驱动电路104对应第二区域的部分，第二区域由相邻两个直流电源信号线VDD、第i-1级扫描信号线SCAN（i-1）、与第i-1级扫描信号线SCAN（i-1）相邻的第i级扫描信号线SCAN（i）以及位于第i-1级扫描信号线SCAN（i-1）和第i级扫描信号线SCAN（i）之间的金属屏蔽构件10431围合而成。第二低反射堆叠部104b也包括数据线D（j+1）的部分。第三低反射堆叠部104c为相邻两个第一像素驱动电路104对应第三区域的部分，第三区域由第i级发光控制信号线EM（i）、与第i级发光控制信号线EM（i）相邻的第i级扫描信号线SCAN（i）、数据线D(j+1)以及靠近数据线D(j+1)的图案化有源层1041围合而成。第三低反射堆叠部104c不包括金属。第一低反射堆叠部104a、第二低反射堆叠部104b以及第三低反射堆叠部104c均为矩形。相邻两个第一像素驱动电路104中，一个第三低反射堆叠部104c设置在一个第一低反射堆叠部104a以及第二低反射堆叠部104b之间。\n\n[0052]每个第一低反射堆叠部104a中的空白堆叠部在显示装置的基板上的正投影的面积大于每个第二低反射堆叠部104b中的空白堆叠部在基板上的正投影的面积，每个第二低反射堆叠部104b中的空白堆叠部在基板上的正投影的面积大于每个第三低反射堆叠部104c中的空白堆叠部在基板上的正投影的面积。主显示区100c除了多个第一低反射堆叠部104a的空白堆叠部、多个第二低反射堆叠部104b的空白堆叠部以及多个第三低反射堆叠部104c的空白堆叠部的反射率很低之外，其他区域的反射率由于布设金属层导致反射率较高。\n\n[0053]结合图2以及图3，多个第二显示像素均匀地设置于显示透光区100a和过渡显示区100b。每个第二显示像素包括第二红色子像素100a1、第二绿色子像素100a3以及第二蓝色子像素100a2。第二红色子像素100a1、第二绿色子像素100a3以及第二蓝色子像素100a2在显示透光区100a和过渡显示区100b均呈Pentile设计分布。第二红色子像素100a1、第二绿色子像素100a3以及第二蓝色子像素100a2的形状均为圆形。第二红色子像素100a1、第二绿色子像素100a3以及第二蓝色子像素100a2均包括有机发光二极管。\n\n[0054]第一红色子像素100c1的尺寸大于第二红色子像素100a1的尺寸，第一绿色子像素100c3的尺寸大于第二绿色子像素100a3的尺寸，第一蓝色子像素100c2的尺寸大于第二蓝色子像素100a2的尺寸，以保证显示透光区100a具有高透光率。由于一个第二红色子像素100a1与一个第一红色子像素100c1的尺寸不同，两者对应的驱动电路的驱动功率也不同，同理，第一绿色子像素100c3与第二绿色子像素100a3对应的驱动电路的驱动功率也不同，且第一蓝色子像素100c2与第二蓝色子像素100a2对应的驱动电路的驱动功率也不同。故第一像素驱动电路104只能用于驱动主显示区100c的第一红色子像素100c1、第一绿色子像素100c3以及第一蓝色子像素100c2，而不能用于驱动过渡显示区100b和显示透光区100a的第二红色子像素100a1、第二绿色子像素100a3以及第二蓝色子像素100a2。\n\n[0055]从主显示区100c到过渡显示区100b，子像素的尺寸变小，为了从主显示区100c到过渡显示区100b显示能均匀地过渡，避免显示时主显示区100c和过渡显示区100b之间的交界处出现明显的分界线，多个第一红色子像素100c1、多个第一绿色子像素100c3以及多个第一蓝色子像素100c2在主显示区100c和过渡显示区100b的交界处呈台阶形分布，且多个第二红色子像素100a1、多个第二绿色子像素100a3以及多个第二蓝色子像素100a2在主显示区100c和过渡显示区100b的交界处呈台阶形分布。\n\n[0056]如图8所示，图8为图1所示显示装置的主显示区、过渡显示区以及显示透光区的局部放大示意图，图9为图8中像素驱动电路岛的示意图，图10为像素驱动电路岛中的第二像素驱动电路的平面示意图。\n\n[0057]结合图4、图8以及图9可知，多个第二像素驱动电路1011设置于过渡显示区100b，多个第二像素驱动电路1011组成多个像素驱动电路岛101。多个像素驱动电路岛101环绕显示透光区100a分布，以使多个像素驱动电路岛101适应显示透光区100a的形状设置，减少多个像素驱动电路岛101中的第二像素驱动电路1011与对应的子像素之间的间距，从而减小连接第二像素驱动电路1011与对应子像素的导线的阻抗，提高第二显示像素的发光的均一性。\n\n[0058]具体地，多个像素驱动电路岛101包括第一组像素驱动电路岛101a和第二组像素驱动电路岛101b，第一组像素驱动电路岛101a中的像素驱动电路岛101呈弧形分布，第二组像素驱动电路岛101b中的像素驱动电路岛101呈弧形分布，第一组像素驱动电路岛101a中的像素驱动电路岛101与第二组像素驱动电路岛101b中的像素驱动电路岛101关于第二对称轴B-B对称设置。第一组像素驱动电路岛101a中的像素驱动电路岛101关于第一对称轴A-A对称设置。第二组像素驱动电路岛101b中的像素驱动电路岛101关于第一对称轴A-A对称设置。\n\n[0059]每个像素驱动电路岛101呈矩形。每个像素驱动电路岛101包括多个阵列排布的第二像素驱动电路1011，多个像素驱动电路岛101的第二像素驱动电路1011用于驱动多个第二显示像素发光，即多个像素驱动电路岛101的第二像素驱动电路1011用于驱动过渡显示区100b的第二显示像素发光的同时，还用于驱动显示透光区100a的第二显示像素发光，以避免显示透光区100a设置像素驱动电路，避免第二像素驱动电路1011的金属膜层对显示透光区100a的透光率造成影响，从而进一步地提高显示透光区100a的透光率。\n\n[0060]每个第二像素驱动电路1011的等效电路图与图5所示的第一像素驱动电路的等效电路图相同，不同之处在于，第二像素驱动电路1011的驱动功率与第一像素驱动电路104的驱动功率不同，对应地，第二像素驱动电路1011与第一像素驱动电路104之间的差异包括两者的尺寸不同，且两者内部的器件以及走线的大小存在差异。\n\n[0061]请参阅图10，其为像素驱动电路岛中的第二像素驱动电路及第二像素驱动电路正上方的图案化第四金属层的平面示意图。每个第二像素驱动电路的平面示意图与第一像素驱动电路的平面示意图基本相似，不同之处在于两者的布设间距等存在差异。第二像素驱动电路1011与第一像素驱动电路104的区别还包括，第二像素驱动电路1011与第n-1级扫描信号线Scan(n-1)、第n级扫描信号线Scan(n)以及第n级发光控制信号线EM（n）连接。第n-1级扫描信号线Scan(n-1)在第二像素驱动电路1011中的位置对应第i-1级扫描信号线Scan(i-1)在第一像素驱动电路104中的位置，第n级扫描信号线Scan(n)在第二像素驱动电路1011中的位置对应第i级扫描信号线Scan(i)在第一像素驱动电路104中的位置，第n级发光控制信号线EM（n）在第二像素驱动电路1011中的位置对应第i级发光控制信号线EM(i)在第一像素驱动电路104中的位置。\n\n[0062]结合图10可知，显示装置还包括图案化第四金属层1045，图案化第四金属层1045位于图案化第三金属层1044远离图案化第二金属层1043的一侧，图案化第四金属层1045与图案化第三金属层1044之间设置有第四绝缘层。图案化第四金属层1045包括金属网格10451，金属网格10451用于传输直流电源信号，部分金属网格10451设置于主显示区100c，部分金属网格10451对应多个像素驱动电路岛101的多个第二像素驱动电路1011设置。金属网格10451包括多个纵向金属线和横向金属线，且金属网格10451呈网格状，金属网格10451与图案化第三金属层1044中的直流电源信号线VDD电性连接，以传输直流电源信号，改善直流电源信号在传输过程中的电阻压降。图案化第四金属层1045的制备材料为钼、铝、钛以及铜中的至少一种。第四绝缘层为有机绝缘层。像素驱动电路岛101中的第二像素驱动电路1011与显示透光区100a的第二显示像素通过透明导线电性连接，以进一步地提高显示透光区100a的透光率。透明导线的制备材料选自氧化铟锡或氧化铟锌中的至少一种。像素驱动电路岛101中的第二像素驱动电路1011与过渡显示区100b的第二显示像素可以通过金属导线电性连接。\n\n[0063]与主显示区100c中不同，一个第二像素驱动电路1011用于驱动多个第二红色子像素100a1、多个第二绿色子像素100a3以及多个第二蓝色子像素100a2中的至少两个，以减少第二像素驱动电路1011的数目，减少多个像素驱动电路岛101占用的空间，从而使得显示透光区100a的尺寸可以增大或者过渡显示区100b具有更多的空间。第二像素驱动电路1011可以用于驱动多个第二红色子像素100a1、多个第二绿色子像素100a3以及多个第二蓝色子像素100a2中发出色光相同的子像素和/或发出色光不同的子像素。在显示透光区100a，为同一个第二像素驱动电路1011驱动的子像素通过透明导线电性连接。\n\n[0064]具体地，相邻两个第二红色子像素100a1为同一个第二像素驱动电路1011驱动，相邻两个第二蓝色子像素100a2为同一个第二像素驱动电路1011驱动，且相邻四个第二绿色子像素100a3为同一个第二像素驱动电路1011驱动。\n\n[0065]请参阅图8，多个第一信号线102从主显示区100c延伸至过渡显示区100b，且多个第二信号线103从主显示区100c延伸至过渡显示区100b，多个第一信号线102和多个第二信号线103不设置于显示透光区100a。多个第一信号线102和多个第二信号线103的制备材料均为金属，金属包括但不限于钼、铝、钛以及铜。其中，多个第一信号线102以及多个第二信号线103不设置于显示透光区100a，使得显示透光区100a具有高透光率。\n\n[0066]具体地，第一信号线102为数据线，例如上述数据线D（n）等，数据线用于传输数据信号。第二信号线103选自扫描线、复位线以及发光控制信号线中的至少一种，例如上述扫描信号线Scan(n)以及初始化信号线VI等。其中，扫描线用于传输扫描信号，复位线用于传输复位信号和/或初始化信号，发光控制信号线用于传输发光控制信号。\n\n[0067]每个第一信号线102包括第一连接段1021，多个第一信号线102的第一连接段1021连接多个像素驱动电路岛101，以使数据信号传输至多个像素驱动电路岛101的第二像素驱动电路1011，多个第一信号线102的第一连接段1021设置于多个像素驱动电路岛101和显示透光区100a之间。相对于多个第一信号线102的第一连接段1021设置于多个像素驱动电路岛101的外围或者相对两侧，多个第一信号线102的第一连接段1021设置于多个像素驱动电路岛101和显示透光区100a之间，使得多个第一信号线102的第一连接段1021的长度减小，避免多个第一信号线102的第一连接段1021的长度过长导致阻抗差异较大，进而导致主显示区100c的子像素存在显示不均的问题。\n\n[0068]具体地，每个第一信号线102的第一连接段1021连接于第一组像素驱动电路岛101a中的像素驱动电路岛101和第二组像素驱动电路岛101b中对应的像素驱动电路岛101之间，使得数据信号在第一组像素驱动电路岛101a中的像素驱动电路岛101和第二组像素驱动电路岛101b中对应的像素驱动电路岛101之间传输。\n\n[0069]每个第一信号线102还包括第一过渡段1022，多个第一信号线102的第一过渡段1022设置于多个像素驱动电路岛101和主显示区100c之间，且与多个像素驱动电路岛101连接。一方面，多个第一信号线102的第一过渡段1022设置于多个像素驱动电路岛101和主显示区100c之间，每个第一信号线102的第一过渡段1022的布设需要占用多个像素驱动电路岛101和主显示区100c之间的空间，以完成第一信号线102从主显示区100c至过渡显示区100b之间的过渡。另一方面，多个像素驱动电路岛101更加靠近显示透光区100a的中心位置设置，保证对应显示透光区100a中心位置第二显示像素的像素驱动电路岛101中的第二像素驱动电路1011能驱动中心位置处的第二显示像素。\n\n[0070]至少部分第一过渡段1022包括扇形区段10221和与扇形区段10221连接的直线区段10222，多个第一过渡段1022的扇形区段10221聚集且呈扇形分布，收窄成一组第一信号线102，且通过多个第一过渡段1022的直线区段10222与像素驱动电路岛101连接。\n\n[0071]延伸至过渡显示区100b的第二信号线103分成多组，每组串接对应的像素驱动电路岛101，以使控制信号（扫描信号、发光控制信号、初始化信号、复位信号）传输至相互串接的像素驱动电路岛101。每个第二信号线103包括连接第一组像素驱动电路岛101a和第二组像素驱动电路岛101b中相邻两个像素驱动电路岛101的第二连接段1031，第二连接段1031可以为直线、折线或者弧形。每个第二信号线103还包括第二过渡段1032，多个第二信号线103的第二过渡段1032设置于多个像素驱动电路岛101和主显示区100c之间，其中，第二过渡段1032是主显示区100c的第二信号线103经过换线得到。\n\n[0072]在过渡显示区100b，由于多个第二像素驱动电路1011组成多个像素驱动电路岛101，每个像素驱动电路岛101是与多个第一信号线102中的至少两个电性连接，且与多个第二信号线103中的至少两个电性连接，使得多个第一信号线102延伸至过渡显示区100b时需要调整且分为多组第一信号线102，每组第一信号线102与一个像素驱动电路岛101连接，且多个第二信号线103延伸至过渡显示区100b时需要换线且分为多组，每组第二信号线103串接多个像素驱动电路岛101。\n\n[0073]基于大量的探索与研究，发明人发现显示装置在息屏且强光照射条件下，过渡显示区100b和主显示区100c之间出现明显的分界，原因是由于过渡显示区100b和主显示区100c的单位面积的金属覆盖面积不同，导致过渡显示区100b和主显示区100c对光的反射率不同，主显示区100c的单位面积的金属覆盖面积较大，过渡显示区100b的单位面积的金属覆盖面积相对较小，且过渡显示区100b的单位面积的金属覆盖面积较小的原因是因为多个第二像素驱动电路1011之间的间隙处金属覆盖面积较小，具体为，过渡显示区100b中多个像素驱动电路岛101之外的区域的反射率较低。基于此，本申请在显示装置的过渡显示区100b设置有金属反射部105，且金属反射部105至少位于多个第二像素驱动电路1011之间的间隙，提高多个第二像素驱动电路1011之间的间隙处的反射率，以使过渡显示区100b和主显示区100c的单位面积金属覆盖面积接近，进而使得过渡显示区100b和主显示区100c的反射率接近，避免显示装置在息屏且强光照射条件下主显示区100c和过渡显示区100b之间出现明显的分界。\n\n[0074]金属反射部105可以为上述图案化第一金属层1042、上述图案化第二金属层1043、上述图案化第三金属层1044、上述图案化第四金属层1045中任一者的部分或者多者的组合，金属反射部105也可以为上述四个图案化金属层之外新增加的金属膜层。\n\n[0075]金属反射部105传输直流电压信号，直流电压信号选自初始化信号或者电源信号中的一种，以避免金属反射部105处于浮置状态。初始化信号为上述初始化信号线VI传输的信号。电源信号可以为直流电源信号VDD等。\n\n[0076]具体地，直流电压信号为输入至多个第一像素驱动电路104和/或多个第二像素驱动电路1011的电源信号。\n\n[0077]如图12及图13所示，图12为显示装置的第一种截面示意图，图13为镂空部在金属反射部中的位置对应部分低反射堆叠部在多个第一像素驱动电路中的位置的示意图。显示装置包括设置于过渡显示区100b的驱动晶体管M1、第二发光控制晶体管M6、电容器、栅极引线10443、直流电源信号线VDD、第一阳极引线10444、第二阳极引线10452、金属网格10451以及金属反射部105。显示装置还包括设置于显示透光区100a的有机发光二极管OLED。\n\n[0078]驱动晶体管M1包括设置于基板111上的驱动有源层，驱动有源层为上述图案化有源层1041的一部分，驱动有源层包括驱动沟道M11a、驱动源极M11b以及驱动漏极M11c，驱动源极M11b以及驱动漏极M11c是半导体通过掺杂后导体化得到。驱动晶体管M1还包括驱动栅极M12，驱动栅极M12对应驱动沟道M11a设置，驱动栅极M12也是电容器的下极板C1。驱动栅极M12为上述图案化第一金属层1042的一部分。驱动栅极M12和驱动有源层之间设置有第一绝缘层106。\n\n[0079]第二发光控制晶体管M6包括第二发光控制有源层以及第二发光控制栅极，第二发光控制有源层与驱动有源层同层设置，第二发光控制有源层包括第二发光控制沟道M61a、第二发光控制源极M61b以及第二发光控制漏极M61c。第二控制栅极与驱动栅极M12同层设置且对应第二发光控制沟道M61a设置。\n\n[0080]电容器包括上极板C2以及下极板C1，上极板C2和下极板C1之间设置有第二绝缘层107，且上极板C2与下极板C1对应设置。上极板C2为上述图案化第二金属层1043的一部分。\n\n[0081]栅极引线10443位于上极板C2的正上方，栅极引线10443为上述图案化第三金属层1044的一部分，栅极引线10443与上极板C2之间设置有第三绝缘层108，栅极引线10443通过贯穿第三绝缘层108、上极板C2、第二绝缘层107的过孔与下极板C1电性连接，以实现与驱动晶体管M1的栅极M12电性连接。\n\n[0082]第一阳极引线10444与栅极引线10443以及直流电源信号线VDD同层设置。第一阳极引线10444为上述图案化第三金属层1044的一部分，第一阳极引线10444与第二发光控制晶体管M6的第二发光控制漏极M61c通过贯穿第三绝缘层108、第二绝缘层107以及第一绝缘层106的过孔电性连接。\n\n[0083]第二阳极引线10452为图案化第四金属层1045的一部分，第二阳极引线10452与金属网格10451同层设置。第二阳极引线10452与第一阳极引线10444之间设置有第四绝缘层109，第二阳极引线10452通过第四绝缘层109上的过孔与第一阳极引线10444电性连接。\n\n[0084]多个透明导线1046设置于多个第二像素驱动电路1011的上方，多个透明导线1046连接于第二阳极引线10452和有机发光二极管OLED的阳极1047之间。部分透明导线1046设置在过渡显示区100b，且部分透明导线1046从过渡显示区100b延伸至显示透光区100a，以使过渡显示区100b的第二像素驱动电路1011驱动显示透光区100a的子像素，提高显示透光区100a的透光率。透明导线1046与图案化第四金属层1045之间设置有第五绝缘层110，第五绝缘层110为有机绝缘层。透明导线1046位于不同膜层时，相邻膜层上的透明导线1046之间也设置有有机绝缘层。每个透明导线1046的宽度大于或等于1微米，且同一层的相邻透明导线1046之间的间距大于或等于2微米，避免透明导线1046之间短路。\n\n[0085]金属反射部105与金属网格10451同层设置，且金属反射部105与金属网格10451连接。金属反射部105与金属网格10451通过同一图案化制程得到。由于图案化第一金属层1042、图案化第二金属层1043以及图案化第三金属层1044主要用于布设驱动电路的器件或者走线，导致这些膜层设置特定形态的金属反射部的空间受限，而图案化第四金属层1045中具有足够的空间布设金属反射部105。利用与金属网格10451同层的金属反射部105作为反射层，相较于利用过渡显示区100b的第一信号线102以及第二信号线103进行反射，可以减少去除部分第四金属层的制程，有利于简化制程，且第一信号线102以及第二信号线103的布设主要考虑信号的传输以及减少阻抗等问题，不是考虑反射。金属反射部105可以为Ti层/Al层/Ti层，金属反射部105也可以为Mo层。\n\n[0086]金属网格10451位于多个电源直流信号线VDD的上方。由于金属网格10451与电源直流信号线VDD电性连接，使得金属反射部105与多个电源直流信号线VDD电性连接，从而使得金属反射部105传输直流电压信号，避免金属反射部105不接入电信号而出现浮置进而影响电路工作，且金属反射部105传输直流电源信号进一步地改善直流电源信号传输过程中的电阻压降。\n\n[0087]金属反射部105包括至少一个镂空部，以使金属反射部105的镂空部处的反射率较低而金属反射部105其他位置的反射率高，过渡显示区100b的金属反射部105与主显示区100c的多个第一像素驱动电路104均具有高反射率区和低反射率区，有利于两者的反射率趋于相同，改善显示装置在息屏且强光照射下时出现的分界问题。金属反射部105属于同一个膜层时，镂空部可以位于同一个膜层。金属反射部105位于不同的膜层时，镂空部可以位于一个或多个膜层。\n\n[0088]金属反射部105包括多个镂空部，多个镂空部在金属反射部105中的位置对应部分低反射堆叠部在多个第一像素驱动电路104中的位置，以使金属反射部105中的反射率分布情况与多个第一像素驱动电路104中的反射率分布情况趋于相同。多个镂空部在金属反射部105中的位置对应部分低反射堆叠部在多个第一像素驱动电路104中的位置是指多个镂空部在金属反射部105中的位置与部分低反射堆叠部在多个第一像素驱动电路104中的位置相同，多个镂空部与部分低反射堆叠部可以如图13所示并排设置，也可以多个镂空部与部分低反射堆叠部错开设置。\n\n[0089]至少一个镂空部与部分低反射堆叠部并排设置，以使具有低反射率的镂空部在金属反射部105中的位置分布与具有低反射率的低反射堆叠部在多个第一像素驱动电路104中的位置分布趋于相同，金属反射部105的反射率分布与多个第一像素驱动电路104的反射率分布趋于相同，进一步地改善显示装置在息屏且强光照射下时出现的分界问题。\n\n[0090]并排设置的镂空部和低反射堆叠部中，低反射堆叠部在显示装置的基板111上的正投影的形状与镂空部在显示装置的基板111上的正投影的形状相同或相似，以进一步地使金属反射部105的反射率与多个第一像素驱动电路104的反射率趋于相同。\n\n[0091]并排设置的镂空部和低反射堆叠部中，镂空部在显示装置的基板111上的正投影的面积等于低反射堆叠部在显示装置的基板111上的正投影的面积，以进一步地使金属反射部105的反射率与多个第一像素驱动电路104的反射率趋于相同。\n\n[0092]至少一个镂空部在显示装置的基板111上的正投影的形状选自矩形、梯形以及不规则图形中的至少一种。形状为矩形、梯形等规则图形时，更容易在制程上实现图案化；形状为不规则图形时，更有利于镂空部在显示装置的基板111上的正投影的形状与低反射堆叠部在基板111上的正投影的形状匹配。\n\n[0093]并排设置的镂空部和低反射堆叠部中，相邻两个镂空部之间的间距等于相邻两个低反射堆叠部之间的间距。\n\n[0094]具体地，至少一个镂空部105包括第一镂空部1051a、第二镂空部1051b以及第三镂空部1051c，第一镂空部1051a的面积大于第二镂空部1051b的面积，第二镂空部1051b的面积大于第三镂空部1051c的面积；第一低反射堆叠部104a与第一镂空部1051a并排设置，第二低反射堆叠部104b与第二镂空部1051b并排设置，第三低反射堆叠部104c与第三镂空部1051c并排设置。第一镂空部1051a、第二镂空部1051b以及第三镂空部1051c的形状均为矩形，有利于简化制程。可以理解的是，第一镂空部1051a、第二镂空部1051b以及第三镂空部1051c的形状也可以根据第一低反射堆叠部104a、第二低反射堆叠部104b以及第三低反射堆叠部104c中空白堆叠部的形状进行调节。需要说明的是，图13中第一低反射堆叠部104a、第二低反射堆叠部104b以及第三低反射堆叠部104c中的部分金属未示意出，实际第一低反射堆叠部104a、第二低反射堆叠部104b以及第三低反射堆叠部104c如图7所示。\n\n[0095]通过在过渡显示区100b除多个像素驱动电路岛101之外的区域设置金属反射部105，金属反射部105的反射率分布与主显示区100c的反射率分布相近，有利于避免主显示区105和过渡显示区100b之间出现明显的反射率分布差异。\n\n[0096]结合图4以及图11可知，部分金属反射部105环绕多个像素驱动电路岛101且设置于多个像素驱动电路岛101和主显示区100c之间，部分金属反射部105设置于多个像素驱动电路岛101与显示透光区100a之间，部分金属反射部105设置于相邻两个像素驱动电路岛101之间，使得过渡显示区100b除设置有多个像素驱动电路岛101的区域的之外所有区域均设置有金属反射部105。\n\n[0097]金属反射部105靠近显示透光区100a的边界包括弧形边界，金属反射部105靠近主显示区100c的边界包括台阶形边界，以适应过渡显示区100b与显示透光区100a之间的边界为圆形且过渡显示区100b与主显示区100c之间的边界为台阶形，使得交界处的反射率与其他位置的反射率相匹配。\n\n[0098]金属反射部105中的金属在显示装置的基板111上的正投影在单位面积的占比与多个第一像素驱动电路104中的金属在显示装置的基板111上的正投影在单位面积的占比之间的差值绝对值大于或等于0%且小于或等于6%，以使得过渡显示区100b的金属反射部105的反射率与主显示区100c的反射率接近，避免显示装置在息屏且强光照射状态下出现明显的分界效果。差值绝对值可以为1%、2%以及3%等。\n\n[0099]请参阅图14，其为显示装置的第二种截面示意图。图14所示显示装置与图12所示显示装置基板相似，不同之处在于，金属反射部105与多个有机发光二极管OLED的阳极1047同层设置，且金属反射部105与多个有机发光二极管OLED的阳极1047之间绝缘，以使得过渡显示区100b和主显示区100c的反射率接近。金属反射部105与多个有机发光二极管OLED的阳极1047通过同一制程图案化制备得到。金属反射部105为氧化铟锡层、银层以及氧化铟锡层的叠层。相较于金属反射部105设置于图案化第四金属层1045且接入直流电源信号，金属反射部105与阳极1047同层设置且不接入固定电压会导致金属反射部105处于浮置状态，增加金属反射部105影响电路正常工作的风险。\n\n[0100]金属反射部105与多个有机发光二极管OLED的阳极1047之间的间距大于或等于3微米，以避免金属反射部105与多个有机发光二极管OLED的阳极1047之间出现短路。\n\n[0101]本申请还提供一种电子设备，电子设备包括上述显示装置及感光单元，感光单元对应显示装置的显示透光区100a设置。感光单元为摄像头。由于显示装置的显示透光区100a具有高透光率，可以保证摄像头的拍照效果；且显示装置的显示透光区100a具有第二显示像素，显示透光区100a也可以进行显示。另外，通过至少在过渡显示区100b的多个第二像素驱动电路1011之间的间隙设置金属反射部105，避免电子设备在息屏且强光照射条件下主显示区100c和过渡显示区100b之间出现明显的分界问题。\n\n[0102]以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10863, 23917, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种背光模组及其制备方法与显示装置。\n\n背景技术\n\n[0002]随着显示技术的迅猛发展，液晶显示技术在显示领域被广泛应用。液晶显示面板本身并不能发光，需要背光模组提供其显示所需的亮度。微型发光二极管(Mini-LightEmitting Diode,Mini-LED)作为背光已经成为了当前显示技术领域中的研究热点，Mini-LED具有显示性能佳、低功率、高亮度的特点。\n\n[0003]在现有技术中，Mini-LED背光模组的结构如图1所示，包括：一金属背板101、一胶框102、一双面胶层103、一Mini-LED灯板104、一柔性电路(Flexible Printed Circuit,FPC)板105、一光学膜片组106、一遮光胶层107以及一金属挡墙108，所述双面胶层103、所述Mini-LED灯板104以及所述光学膜片组106依次层叠设置于所述金属背板101上，所述FPC板105与所述Mini-LED灯板104相连。其中，所述Mini-LED灯板104包括一载板1041以及布设于所述载板1041上的多个Mini-LED1042。所述双面胶层103用于将所述Mini-LED灯板104固定于所述金属背板101上。所述胶框102用于连接或者定位所述背光模组中的其他组件，其设置于所述双面胶层103、所述Mini-LED灯板104以及所述光学膜片组106的周围。所述金属挡墙108设置于所述胶框102的外侧，且所述金属挡墙108与所述胶框102之间具有一间隙，所述遮光胶层107设置于所述金属挡墙108上。现有Mini-LED背光模组在组装之前，其金属背板101、胶框102、Mini-LED灯板104、金属挡墙108等大多为相互独立的部件，具有组装繁琐的缺点。\n\n[0004]此外，由于Mini-LED背光模组一般需布局Mini-LED的数量，所以为了保证混光效果，光学膜片组中的光学膜片数量一般多于常规侧入式背光源的光学膜片数量，且光学膜片组的总厚度通常也厚于常规侧入式背光源中光学膜片的总厚度。\n\n[0005]综上所述，相较于常规侧入式背光模组，现有Mini-LED背光模组的整体厚度和组装工艺无明显优势，从而限制了Mini-LED的应用范围。\n\n发明内容\n\n[0006]本申请提供了一种背光模组及其制备方法与显示装置，以改善现有Mini-LED背光模组的整体厚度较厚、组装繁琐的技术问题。\n\n[0007]第一方面，本申请提供了一种背光模组，包括：\n\n[0008]一微型发光二极管灯板，包括：一基板以及布设于所述基板上的多个微型发光二极管；\n\n[0009]一光学膜片组，层叠设置于所述微型发光二极管灯板的一面上；以及\n\n[0010]一第一挡墙，设置于所述光学膜片组的周围；\n\n[0011]其中，所述微型发光二极管灯板和所述第一挡墙为一体化结构。\n\n[0012]在本申请的一些实施例中，所述基板为硬质的电路板，从而可以省略现有Mini-LED背光模组中的所述金属背板。\n\n[0013]在本申请的一些实施例中，所述基板包括：\n\n[0014]一柔性电路板，一面上布设有多个微型发光二极管；以及\n\n[0015]一金属板，层叠设置于所述柔性电路板的一面上，并且与所述多个微型发光二极管相背设置。\n\n[0016]这样设计的目的是：将所述柔性电路板与所述金属板相结合的一体化结构取代现有Mini-LED背光模组中的所述金属背板和所述基板，有利于减薄Mini-LED背光模组的整体厚度。\n\n[0017]在本申请的一些实施例中，所述第一挡墙的材质为硅胶、聚碳酸酯以及聚甲基丙烯酸甲酯中的至少一者，以便于所述第一挡墙与所述微型发光二极管灯板一体成型。\n\n[0018]在本申请的一些实施例中，所述背光模组还包括：一第二挡墙，设置于所述第一挡墙的外侧，并位于所述微型发光二极管灯板的周围；所述第二挡墙的材质为金属，且所述第一挡墙、所述第二挡墙以及所述微型发光二极管灯板为一体化结构。所述第二挡墙用于加强所述背光模组整体结构的稳定性。\n\n[0019]在本申请的一些实施例中，所述第一挡墙设置于所述微型发光二极管灯板的一面上，所述第二挡墙设置于所述微型发光二极管灯板的周围，且所述第一挡墙与所述第二挡墙相契合，以实现窄边框的所述背光模组。\n\n[0020]在本申请的一些实施例中，所述背光模组还包括：一遮光层，所述遮光层设置于所述第一挡墙上，并延伸至所述光学膜片组背离所述微型发光二极管灯板的一面的部分区域的上方，且所述遮光层和所述光学膜片组之间具有一空气间隙。\n\n[0021]第二方面，本申请提供了一种背光模组的制备方法，以用于制备第一方面中所述的背光模组，所述制备方法包括如下步骤：\n\n[0022]制备所述微型发光二极管灯板和所述第一挡墙的一体化结构，获得具有一预期形状的一组合体；以及\n\n[0023]提供一光学膜片组，将所述光学膜片组与所述组合体对向贴合为一体，获得所述背光模组。\n\n[0024]在本申请的一些实施例中，所述制备方法还包括步骤：在所述第一挡墙上贴附一遮光胶以形成一遮光层，所述遮光层延伸至所述光学膜片组背离所述微型发光二极管灯板的一面的部分区域的上方，且所述遮光层和所述光学膜片组之间形成有一空气间隙。\n\n[0025]第三方面，本申请提供了一种显示装置，包括：一如第一方面中所述的背光模组，用于提供背光；以及一显示面板，位于所述背光模组的出光侧，用于图像显示。\n\n[0026]本申请提供了一种背光模组及其制备方法与显示装置，产生如下的技术效果：\n\n[0027]所述背光模组包括一微型发光二极管灯板、一光学膜片组、一第一挡墙等部件，其中，所述微型发光二极管灯板与所述第一挡墙等部件为一体化结构，相较于现有Mini-LED背光模组的结构，省略了胶框、金属背板等独立的部件，实现窄边框的同时，极大地减薄了背光模组的整体厚度(减薄5％以上)，包含所述背光模组的终端产品适用于多样化的应用场景。所述背光模组既可以应用于Mini-LED显示装置中，也可以应用于微型矩阵发光二极管(Micro-Light Emitting Diode,Micro-LED)显示装置中。\n\n[0028]此外，相较于现有Mini-LED背光模组，所述背光模组具有组装便捷的优点，仅需在所述微型发光二极管灯板与所述第一挡墙等部件的一体化结构上组装光学膜片组和遮光层即可，使得组装效率大幅度提升。\n\n附图说明\n\n[0029]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0030]图1为现有技术中Mini-LED背光模组的结构示意图。\n\n[0031]图2为本申请的第一个实施例中所述背光模组的结构示意图。\n\n[0032]图3为本申请的第二个实施例中所述背光模组的结构示意图。\n\n[0033]图4为本申请的第三个实施例中所述背光模组的结构示意图。\n\n具体实施方式\n\n[0034]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0035]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0036]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0037]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0038]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0039]第一方面，本申请实施例提供了一种背光模组，所述背光模组既可以应用于Mini-LED显示装置中，也可以应用于Micro-LED显示装置中。所述背光模组包括：一微型发光二极管灯板、一光学膜片组以及一第一挡墙，其中，所述光学膜片组层叠设置于所述微型发光二极管灯板的一面上，所述第一挡墙设置于所述光学膜片组和所述微型发光二极管灯板中至少一者的周围，所述微型发光二极管灯板和所述第一挡墙为一体化结构。\n\n[0040]具体的，所述微型发光二极管灯板包括：一基板以及布设于所述基板上的多个微型发光二极管(Mini-Light Emitting Diode,Mini-LED)。所述多个Mini-LED电性连接于所述基板上。\n\n[0041]在一些实施例中，所述基板为硬质的电路板，例如可以是印刷电路板(PrintedCircuit Board,PCB)、BT(Bismaleimide Triazine)板、铝基板等。所述基板除了具有承载和支撑所述Mini-LED的作用，还用于为所述多个Mini-LED提供驱动电信号。在所述基板的表面上设置多个用于焊接所述多个Mini-LED的位点，通过回流焊等工艺将所述多个Mini-LED焊接至所述基板上。此外，所述多个Mini-LED与所述基板电性连接，通过控制所述基板的输入信号来驱动所述多个Mini-LED发光。\n\n[0042]在一些实施例中，所述基板包括：一FPC板以及一金属板，其中，所述FPC板的一面上布设有多个Mini-LED；所述金属板层叠设置于所述柔性电路板的一面上，并且与所述多个Mini-LED相背设置。所述金属板可以是金属基电路板，例如铝基板等；或者，所述金属板可以是材质为金属的板材，例如不锈钢板、铁板、铝板等。所述多个Mini-LED与所述FPC板电性连接；和/或，所述多个Mini-LED与作为所述金属板的金属基电路板电性连接，即：通过控制所述FPC板和/或所述金属基电路板的输入信号来驱动所述多个Mini-LED发光。\n\n[0043]在一些实施例中，所述微型发光二极管灯板还包括：一保护层，覆盖所述多个Mini-LED，以对所述多个Mini-LED进行封装，有效避免所述多个Mini-LED出现脱落、受潮等问题。所述保护层的材质为硅胶、环氧树脂或其它具有较高透过率的胶体材料。所述保护层可以采用喷涂的方式形成于所述多个Mini-LED的表面。\n\n[0044]具体的，所述光学膜片组可以包括棱镜片、量子点膜、扩散片、反射式偏光片等中的一种或多种，以使背光模组适应多样化的应用。例如，棱镜片可以改变光线的出射角度，从而改变显示装置的可观看角度。量子点膜可以提供单色性更高的量子点发光，从而拓宽显示装置的显示色域，以及大幅度地提升显示亮度。反射式偏光片可以提高光线的利用率，同时使出射光线具有偏振性，从而可以省略液晶显示面板中的下偏光片。\n\n[0045]在一些实施例中，所述第一挡墙的材质为硅胶、聚碳酸酯以及聚甲基丙烯酸甲酯中的至少一者。所述第一挡墙设置于所述光学膜片组的周围，以在各个侧面对所述光学膜片组进行封装。所述第一挡墙可以设置于所述微型发光二极管灯板靠近所述光学膜片组的一面上的四周边缘处；所述第一挡墙也可以设置于所述保护层的周围，并位于所述基板上。\n\n[0046]在一些实施例中，所述背光模组还包括：一第二挡墙，设置于所述第一挡墙的外侧，并位于所述微型发光二极管灯板的周围；所述第二挡墙的材质为金属，且所述第一挡墙、所述第二挡墙以及所述微型发光二极管灯板为一体化结构。所述第二挡墙的材质例如可以是不锈钢、铁、铝、铜等。所述第二挡墙可以与所述金属板的材质相同，并且所述第二挡墙与所述金属板可为一体成型工艺制成。\n\n[0047]在一些实施例中，所述第一挡墙设置于所述微型发光二极管灯板的一面上，所述第二挡墙设置于所述微型发光二极管灯板的周围，且所述第一挡墙与所述第二挡墙相契合。优选地，所述第一挡墙设置于所述微型发光二极管灯板靠近所述光学膜片组的一面上的四周边缘处。由于所述第一挡墙与所述第二挡墙相契合，所以所述第一挡墙与所述第二挡墙之间无间隙，从而实现更窄边框。\n\n[0048]在一些实施例中，所述背光模组还包括：一遮光层，所述遮光层设置于所述第一挡墙上，并延伸至所述光学膜片组背离所述微型发光二极管灯板的一面的部分区域的上方，且所述遮光层和所述光学膜片组之间具有一空气间隙。在纵向上，所述第一挡墙的顶端高于所述光学膜片组的顶端，以使所述遮光层和所述光学膜片组之间形成所述空气间隙，所述空气间隙的作用是：留存所述光学膜片组、所述微型发光二极管灯板等组件形变的空间，防止所述背光模组在高温或低温环境下出现变形的问题。\n\n[0049]在本申请的第一实施例中，如图2所示，所述背光模组包括：一微型发光二极管灯板1、一光学膜片组2、一第一挡墙3、一FPC板4以及一遮光层5。其中，所述微型发光二极管灯板1包括：一基板11、多个Mini-LED12以及一保护层13，所述多个Mini-LED12布设于所述基板11上，相邻所述Mini-LED12之间等距；所述保护层13完全覆盖于所述多个Mini-LED12上，以及部分覆盖于所述基板11上以预留出所述第一挡墙3的位置；所述基板11为PCB板或BT板。所述光学膜片组2层叠设置于所述微型发光二极管灯板1的一面上。所述FPC板4与所述微型发光二极管灯板1相连接。\n\n[0050]所述第一挡墙3设置于所述保护层13的周围，并位于所述基板11上。所述遮光层5设置于所述第一挡墙3上，并延伸至所述光学膜片组2背离所述微型发光二极管灯板1的一面的部分区域的上方，且所述遮光层5和所述光学膜片组2之间具有一空气间隙6。\n\n[0051]相较于图1中现有的Mini-LED背光模组，所述第一实施例中的背光模组省略了金属背板、双面胶层、胶框以及金属挡墙，从而极大地减薄了Mini-LED背光模组的厚度，并且实现更窄边框。\n\n[0052]在本申请的第二实施例中，如图3所示，所述背光模组包括：一微型发光二极管灯板1、一光学膜片组2、一第一挡墙3、一遮光层5以及一第二挡墙7。其中，所述光学膜片组2层叠设置于所述微型发光二极管灯板1的一面上；所述微型发光二极管灯板1包括：一基板11、多个Mini-LED12以及一保护层13，所述多个Mini-LED12布设于所述基板上，相邻所述Mini-LED12之间等距；所述保护层13完全覆盖于所述多个Mini-LED12上，以及部分覆盖于所述基板11上以预留出所述第一挡墙3的位置。\n\n[0053]所述基板11包括：一FPC板4以及一金属板8，其中，所述FPC板4的一面上布设有多个Mini-LED12。所述金属板8层叠设置于所述FPC板4的一面上，并且与所述多个Mini-LED12相背设置；所述金属板8的材质为不锈钢。所述多个Mini-LED12与所述FPC板4电性连接。\n\n[0054]所述第一挡墙3设置于所述保护层13的周围，并位于所述基板11上。所述第二挡墙7设置于所述第一挡墙3的外侧，并位于所述微型发光二极管灯板1的周围。所述第二挡墙7的材质为不锈钢，所述第二挡墙7与所述金属板8为一体成型结构。所述第一挡墙3与所述第二挡墙7相契合，以使所述第一挡墙3与所述第二挡墙7之间无间隙。\n\n[0055]所述遮光层5设置于所述第一挡墙3上，并延伸至所述光学膜片组2背离所述微型发光二极管灯板1的一面的部分区域的上方，且所述遮光层5和所述光学膜片组2之间具有一空气间隙6。\n\n[0056]相较于图1中现有的Mini-LED背光模组，所述第二实施例中的背光模组省略了双面胶层和胶框，从而极大地减薄了Mini-LED背光模组的厚度，并且实现更窄边框。\n\n[0057]在本申请的第三实施例中，如图4所示，所述背光模组包括：一微型发光二极管灯板1、一光学膜片组2、一第一挡墙3、一FPC板4、一遮光层5以及一第二挡墙7。其中，所述微型发光二极管灯板1包括：一基板11、多个Mini-LED12以及一保护层13，所述多个Mini-LED12布设于所述基板11上，相邻所述Mini-LED12之间等距；所述保护层13完全覆盖于所述多个Mini-LED12和所述基板11上；所述基板11为铝基板。所述多个Mini-LED12与所述基板电性连接，且所述FPC板4与所述微型发光二极管灯板1相连接。所述光学膜片组2层叠设置于所述微型发光二极管灯板1的一面上。\n\n[0058]所述第一挡墙3设置于所述微型发光二极管灯板1靠近所述光学膜片组2的一面上的四周边缘处，即设置于所述保护层13上。所述第二挡墙7设置于所述第一挡墙3的外侧，并且位于所述微型发光二极管灯板1的周围。此外，所述第一挡墙3和所述第二挡墙7相契合以使两者之间无间隙，并且所述第二挡墙7与所述微型发光二极管灯板1之间亦无间隙。\n\n[0059]所述遮光层5设置于所述第一挡墙3上，并延伸至所述光学膜片组2背离所述微型发光二极管灯板1的一面的部分区域的上方，且所述遮光层5和所述光学膜片组2之间具有一空气间隙6。\n\n[0060]相较于图1中现有的Mini-LED背光模组，所述第三实施例中的背光模组省略了双面胶层和胶框，并将现有背光模组中的所述载板和所述金属背板合并为一铝基板，从而极大地减薄了Mini-LED背光模组的厚度，并且实现更窄边框。此外，直接使用铝基板取代现有背光模组中的载板和金属背板，能极大地提升散热性能，尤其适用于分区较多、运算量较大的液晶显示模组(LCD Module,LCM)。\n\n[0061]第二方面，本申请实施例提供了一种背光模组的制备方法，用于制备第一方面中所述的背光模组。所述制备方法包括如下步骤：制备所述微型发光二极管灯板和所述第一挡墙的一体化结构，获得具有一预期形状的一组合体；以及，提供一光学膜片组，将所述光学膜片组与所述组合体对向贴合为一体，获得所述背光模组。\n\n[0062]优选地，采用膜压工艺结合切割工艺制备所述微型发光二极管灯板和所述第一挡墙的一体化结构。\n\n[0063]在一些实施例中，所述制备方法还包括步骤：在所述第一挡墙上贴附一遮光胶以形成一遮光层，所述遮光层延伸至所述光学膜片组背离所述微型发光二极管灯板的一面的部分区域的上方，且所述遮光层和所述光学膜片组之间形成有一空气间隙。该步骤在将所述光学膜片组装配至所述组合体的步骤之后。\n\n[0064]在本申请的第四个实施例中，提供了一种背光模组的制备方法，用于制备第一实施例中的所述背光模组，所述制备方法包括如下步骤：\n\n[0065]S1、制备一微型发光二极管灯板。\n\n[0066]具体的，所述步骤S1的操作流程为：首先，提供一PCB板或BT板作为所述微型发光二极管灯板的基板；然后，将所述多个Mini-LED焊接固定于所述基板上；最后，将所述保护层的材料喷涂于所述多个Mini-LED和所述基板上。\n\n[0067]S2、提供一FPC板，将所述FPC板焊接固定于所述微型发光二极管灯板上。\n\n[0068]S3、制备所述微型发光二极管灯板和所述第一挡墙的一体化结构，获得具有一预期形状的一组合体。\n\n[0069]具体的，所述步骤S3包括如下步骤：\n\n[0070]S3.1、第一次膜压步骤：在所述微型发光二极管灯板上膜压形成一涂层，所述涂层的材质为透明胶水。\n\n[0071]S3.2、第一次切割步骤：对具有所述涂层的所述微型发光二极管灯板进行切割，获得具有一特定形状的所述微型发光二极管灯板。\n\n[0072]S3.3、第二次膜压步骤：在所述具有一特定形状的所述微型发光二极管灯板的周围膜压形成一第一挡墙。\n\n[0073]S3.4、二次切割步骤：对所述第一挡墙进行切割，获得所述具有一预期形状的一组合体。\n\n[0074]需要说明的是，在所述步骤3.2中所述透明胶水中可以添加有适量的荧光粉，荧光粉的添加量可依据实际需要自行选择，在此不作具体限定。\n\n[0075]S4、在所述组合体上装配所述光学膜片组。\n\n[0076]具体的，所述步骤S4的操作流程为：提供一光学膜片组，将所述光学膜片组与所述组合体对向贴合为一体。\n\n[0077]S5、在装配有所述光学膜片组的所述组合体上制备形成一遮光层，获得所述背光模组。\n\n[0078]具体的，在所述第一挡墙上贴附一遮光胶以形成一遮光层，所述遮光层延伸至所述光学膜片组背离所述微型发光二极管灯板的一面的部分区域的上方，且所述遮光层和所述光学膜片组之间形成有一空气间隙。\n\n[0079]在本申请的第五个实施例中，提供了一种背光模组的制备方法，用于制备第二实施例中的所述背光模组，所述制备方法包括如下步骤：\n\n[0080]S10、制备一微型发光二极管灯板和所述第二挡墙的一体化结构，获得具有一预期形状的第一组合体。\n\n[0081]具体的，所述步骤S10的操作流程为：首先，将一不锈钢材料通过模具制成所述第二挡墙与所述金属板的一体成型结构，获得第一成型结构；接着，提供一FPC板，将所述第一成型结构与所述FPC板膜压一体成型，然后切割以获得第二成型结构；然后，将所述多个Mini-LED焊接固定于所述第二成型结构上；最后，将所述保护层的材料喷涂于所述多个Mini-LED和所述第二成型结构上，以获得具有一预期形状的第一组合体。\n\n[0082]S20、制备所述第一组合体和所述第一挡墙的一体化结构，获得具有一预期形状的第二组合体。\n\n[0083]具体的，所述步骤S20参考前述步骤S3进行，在此不再赘述。\n\n[0084]S30、在所述第二组合体上装配所述光学膜片组。\n\n[0085]具体的，所述步骤S30参考前述步骤S4进行，在此不再赘述。\n\n[0086]S40、在装配有所述光学膜片组的所述第二组合体上制备形成一遮光层，获得所述背光模组。\n\n[0087]具体的，所述步骤S40参考前述步骤S5进行，在此不再赘述。\n\n[0088]在本申请的第六个实施例中，提供了一种背光模组的制备方法，用于制备第三实施例中的所述背光模组，所述制备方法包括如下步骤：\n\n[0089]S100、制备一微型发光二极管灯板。\n\n[0090]具体的，所述步骤S100的操作流程为：首先，提供一铝基板作为所述微型发光二极管灯板的基板；然后，将所述多个Mini-LED焊接固定于所述铝基板上；最后，将所述保护层的材料喷涂于所述多个Mini-LED和所述铝基板上。\n\n[0091]S200、提供一FPC板，将所述FPC板焊接固定于所述微型发光二极管灯板上。\n\n[0092]S300、制备所述微型发光二极管灯板和所述第一挡墙的一体化结构，获得具有一预期形状的一第一组合体。\n\n[0093]具体的，所述步骤S300参考前述步骤S3进行，在此不再赘述。\n\n[0094]S400、制备所述第一组合体和所述第二挡墙的一体化结构，获得具有一预期形状的一第二组合体。\n\n[0095]具体的，所述第一组合体和所述第二挡墙通过膜压工艺形成一体化结构(可以参照前述步骤S3进行)，然后切割形成具有一预期形状的一第二组合体。\n\n[0096]S500、在所述第二组合体上装配所述光学膜片组。\n\n[0097]具体的，所述步骤S500参考前述步骤S4进行，在此不再赘述。\n\n[0098]S600、在装配有所述光学膜片组的所述第二组合体上制备形成一遮光层，获得所述背光模组。\n\n[0099]具体的，所述步骤S600参考前述步骤S5进行，在此不再赘述。\n\n[0100]需要说明的是，第四个实施例至第六个实施例中涉及的“切割”是采用激光或刀轮对目标对象进行切割。此外，对于制备所述背光模组，可采用其他一体成型工艺制备一体化结构的所述微型发光二极管灯板，以及所述微型发光二极管灯板、所述第一挡墙和/或所述第二挡墙的一体化结构，本申请实施例优选膜压一体成型工艺，但并非作出具体限定，可依据实际需要自行选择合适的一体成型工艺。\n\n[0101]第三方面，本申请实施例提供了一种显示装置，所述显示装置可为手机、电脑、数码相机、数码摄像机、游戏机、音频再生装置、信息终端机、智能可穿戴设备、智能称重电子秤、车载显示器、电视机等任何具有显示功能的产品或部件，其中，所述智能可穿戴设备可为智能手环、智能手表、智能眼镜等。\n\n[0102]所述显示装置包括：一如第一方面中所述的背光模组以及一显示面板，所述显示面板位于所述背光模组的出光侧。所述背光模组可以在整个出光面内均匀的发出光线，用于为所述显示面板提供亮度重组且分布均匀的光线，以使所述显示面板可以正常显示影像。所述背光模组可以采用Mini-LED作为光源，也可以采用Micro-LED作为光源。\n\n[0103]所述显示面板具有多个呈阵列分布的像素单元，每个像素单元都可以独立控制背光模组入射于其内的光线透过率和色彩，以对所述背光模组射出的光线进行调制，实现图像显示。所述显示面板可以是现有技术中的产品，在此不再赘述。\n\n[0104]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0105]以上对本申请实施例所提供的一种背光模组及其制备方法与显示装置，进行了详细介绍。本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种背光模组及其制备方法与显示装置。\n\n背景技术\n\n[0002]随着显示技术的迅猛发展，液晶显示技术在显示领域被广泛应用。液晶显示面板本身并不能发光，需要背光模组提供其显示所需的亮度。微型发光二极管(Mini-LightEmitting Diode,Mini-LED)作为背光已经成为了当前显示技术领域中的研究热点，Mini-LED具有显示性能佳、低功率、高亮度的特点。\n\n[0003]在现有技术中，Mini-LED背光模组的结构如图1所示，包括：一金属背板101、一胶框102、一双面胶层103、一Mini-LED灯板104、一柔性电路(Flexible Printed Circuit,FPC)板105、一光学膜片组106、一遮光胶层107以及一金属挡墙108，所述双面胶层103、所述Mini-LED灯板104以及所述光学膜片组106依次层叠设置于所述金属背板101上，所述FPC板105与所述Mini-LED灯板104相连。其中，所述Mini-LED灯板104包括一载板1041以及布设于所述载板1041上的多个Mini-LED1042。所述双面胶层103用于将所述Mini-LED灯板104固定于所述金属背板101上。所述胶框102用于连接或者定位所述背光模组中的其他组件，其设置于所述双面胶层103、所述Mini-LED灯板104以及所述光学膜片组106的周围。所述金属挡墙108设置于所述胶框102的外侧，且所述金属挡墙108与所述胶框102之间具有一间隙，所述遮光胶层107设置于所述金属挡墙108上。现有Mini-LED背光模组在组装之前，其金属背板101、胶框102、Mini-LED灯板104、金属挡墙108等大多为相互独立的部件，具有组装繁琐的缺点。\n\n[0004]此外，由于Mini-LED背光模组一般需布局Mini-LED的数量，所以为了保证混光效果，光学膜片组中的光学膜片数量一般多于常规侧入式背光源的光学膜片数量，且光学膜片组的总厚度通常也厚于常规侧入式背光源中光学膜片的总厚度。\n\n[0005]综上所述，相较于常规侧入式背光模组，现有Mini-LED背光模组的整体厚度和组装工艺无明显优势，从而限制了Mini-LED的应用范围。\n\n发明内容\n\n[0006]本申请提供了一种背光模组及其制备方法与显示装置，以改善现有Mini-LED背光模组的整体厚度较厚、组装繁琐的技术问题。\n\n[0007]第一方面，本申请提供了一种背光模组，包括：\n\n[0008]一微型发光二极管灯板，包括：一基板以及布设于所述基板上的多个微型发光二极管；\n\n[0009]一光学膜片组，层叠设置于所述微型发光二极管灯板的一面上；以及\n\n[0010]一第一挡墙，设置于所述光学膜片组的周围；\n\n[0011]其中，所述微型发光二极管灯板和所述第一挡墙为一体化结构。\n\n[0012]在本申请的一些实施例中，所述基板为硬质的电路板，从而可以省略现有Mini-LED背光模组中的所述金属背板。\n\n[0013]在本申请的一些实施例中，所述基板包括：\n\n[0014]一柔性电路板，一面上布设有多个微型发光二极管；以及\n\n[0015]一金属板，层叠设置于所述柔性电路板的一面上，并且与所述多个微型发光二极管相背设置。\n\n[0016]这样设计的目的是：将所述柔性电路板与所述金属板相结合的一体化结构取代现有Mini-LED背光模组中的所述金属背板和所述基板，有利于减薄Mini-LED背光模组的整体厚度。\n\n[0017]在本申请的一些实施例中，所述第一挡墙的材质为硅胶、聚碳酸酯以及聚甲基丙烯酸甲酯中的至少一者，以便于所述第一挡墙与所述微型发光二极管灯板一体成型。\n\n[0018]在本申请的一些实施例中，所述背光模组还包括：一第二挡墙，设置于所述第一挡墙的外侧，并位于所述微型发光二极管灯板的周围；所述第二挡墙的材质为金属，且所述第一挡墙、所述第二挡墙以及所述微型发光二极管灯板为一体化结构。所述第二挡墙用于加强所述背光模组整体结构的稳定性。\n\n[0019]在本申请的一些实施例中，所述第一挡墙设置于所述微型发光二极管灯板的一面上，所述第二挡墙设置于所述微型发光二极管灯板的周围，且所述第一挡墙与所述第二挡墙相契合，以实现窄边框的所述背光模组。\n\n[0020]在本申请的一些实施例中，所述背光模组还包括：一遮光层，所述遮光层设置于所述第一挡墙上，并延伸至所述光学膜片组背离所述微型发光二极管灯板的一面的部分区域的上方，且所述遮光层和所述光学膜片组之间具有一空气间隙。\n\n[0021]第二方面，本申请提供了一种背光模组的制备方法，以用于制备第一方面中所述的背光模组，所述制备方法包括如下步骤：\n\n[0022]制备所述微型发光二极管灯板和所述第一挡墙的一体化结构，获得具有一预期形状的一组合体；以及\n\n[0023]提供一光学膜片组，将所述光学膜片组与所述组合体对向贴合为一体，获得所述背光模组。\n\n[0024]在本申请的一些实施例中，所述制备方法还包括步骤：在所述第一挡墙上贴附一遮光胶以形成一遮光层，所述遮光层延伸至所述光学膜片组背离所述微型发光二极管灯板的一面的部分区域的上方，且所述遮光层和所述光学膜片组之间形成有一空气间隙。\n\n[0025]第三方面，本申请提供了一种显示装置，包括：一如第一方面中所述的背光模组，用于提供背光；以及一显示面板，位于所述背光模组的出光侧，用于图像显示。\n\n[0026]本申请提供了一种背光模组及其制备方法与显示装置，产生如下的技术效果：\n\n[0027]所述背光模组包括一微型发光二极管灯板、一光学膜片组、一第一挡墙等部件，其中，所述微型发光二极管灯板与所述第一挡墙等部件为一体化结构，相较于现有Mini-LED背光模组的结构，省略了胶框、金属背板等独立的部件，实现窄边框的同时，极大地减薄了背光模组的整体厚度(减薄5％以上)，包含所述背光模组的终端产品适用于多样化的应用场景。所述背光模组既可以应用于Mini-LED显示装置中，也可以应用于微型矩阵发光二极管(Micro-Light Emitting Diode,Micro-LED)显示装置中。\n\n[0028]此外，相较于现有Mini-LED背光模组，所述背光模组具有组装便捷的优点，仅需在所述微型发光二极管灯板与所述第一挡墙等部件的一体化结构上组装光学膜片组和遮光层即可，使得组装效率大幅度提升。\n\n附图说明\n\n[0029]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0030]图1为现有技术中Mini-LED背光模组的结构示意图。\n\n[0031]图2为本申请的第一个实施例中所述背光模组的结构示意图。\n\n[0032]图3为本申请的第二个实施例中所述背光模组的结构示意图。\n\n[0033]图4为本申请的第三个实施例中所述背光模组的结构示意图。\n\n具体实施方式\n\n[0034]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0035]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0036]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0037]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0038]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0039]第一方面，本申请实施例提供了一种背光模组，所述背光模组既可以应用于Mini-LED显示装置中，也可以应用于Micro-LED显示装置中。所述背光模组包括：一微型发光二极管灯板、一光学膜片组以及一第一挡墙，其中，所述光学膜片组层叠设置于所述微型发光二极管灯板的一面上，所述第一挡墙设置于所述光学膜片组和所述微型发光二极管灯板中至少一者的周围，所述微型发光二极管灯板和所述第一挡墙为一体化结构。\n\n[0040]具体的，所述微型发光二极管灯板包括：一基板以及布设于所述基板上的多个微型发光二极管(Mini-Light Emitting Diode,Mini-LED)。所述多个Mini-LED电性连接于所述基板上。\n\n[0041]在一些实施例中，所述基板为硬质的电路板，例如可以是印刷电路板(PrintedCircuit Board,PCB)、BT(Bismaleimide Triazine)板、铝基板等。所述基板除了具有承载和支撑所述Mini-LED的作用，还用于为所述多个Mini-LED提供驱动电信号。在所述基板的表面上设置多个用于焊接所述多个Mini-LED的位点，通过回流焊等工艺将所述多个Mini-LED焊接至所述基板上。此外，所述多个Mini-LED与所述基板电性连接，通过控制所述基板的输入信号来驱动所述多个Mini-LED发光。\n\n[0042]在一些实施例中，所述基板包括：一FPC板以及一金属板，其中，所述FPC板的一面上布设有多个Mini-LED；所述金属板层叠设置于所述柔性电路板的一面上，并且与所述多个Mini-LED相背设置。所述金属板可以是金属基电路板，例如铝基板等；或者，所述金属板可以是材质为金属的板材，例如不锈钢板、铁板、铝板等。所述多个Mini-LED与所述FPC板电性连接；和/或，所述多个Mini-LED与作为所述金属板的金属基电路板电性连接，即：通过控制所述FPC板和/或所述金属基电路板的输入信号来驱动所述多个Mini-LED发光。\n\n[0043]在一些实施例中，所述微型发光二极管灯板还包括：一保护层，覆盖所述多个Mini-LED，以对所述多个Mini-LED进行封装，有效避免所述多个Mini-LED出现脱落、受潮等问题。所述保护层的材质为硅胶、环氧树脂或其它具有较高透过率的胶体材料。所述保护层可以采用喷涂的方式形成于所述多个Mini-LED的表面。\n\n[0044]具体的，所述光学膜片组可以包括棱镜片、量子点膜、扩散片、反射式偏光片等中的一种或多种，以使背光模组适应多样化的应用。例如，棱镜片可以改变光线的出射角度，从而改变显示装置的可观看角度。量子点膜可以提供单色性更高的量子点发光，从而拓宽显示装置的显示色域，以及大幅度地提升显示亮度。反射式偏光片可以提高光线的利用率，同时使出射光线具有偏振性，从而可以省略液晶显示面板中的下偏光片。\n\n[0045]在一些实施例中，所述第一挡墙的材质为硅胶、聚碳酸酯以及聚甲基丙烯酸甲酯中的至少一者。所述第一挡墙设置于所述光学膜片组的周围，以在各个侧面对所述光学膜片组进行封装。所述第一挡墙可以设置于所述微型发光二极管灯板靠近所述光学膜片组的一面上的四周边缘处；所述第一挡墙也可以设置于所述保护层的周围，并位于所述基板上。\n\n[0046]在一些实施例中，所述背光模组还包括：一第二挡墙，设置于所述第一挡墙的外侧，并位于所述微型发光二极管灯板的周围；所述第二挡墙的材质为金属，且所述第一挡墙、所述第二挡墙以及所述微型发光二极管灯板为一体化结构。所述第二挡墙的材质例如可以是不锈钢、铁、铝、铜等。所述第二挡墙可以与所述金属板的材质相同，并且所述第二挡墙与所述金属板可为一体成型工艺制成。\n\n[0047]在一些实施例中，所述第一挡墙设置于所述微型发光二极管灯板的一面上，所述第二挡墙设置于所述微型发光二极管灯板的周围，且所述第一挡墙与所述第二挡墙相契合。优选地，所述第一挡墙设置于所述微型发光二极管灯板靠近所述光学膜片组的一面上的四周边缘处。由于所述第一挡墙与所述第二挡墙相契合，所以所述第一挡墙与所述第二挡墙之间无间隙，从而实现更窄边框。\n\n[0048]在一些实施例中，所述背光模组还包括：一遮光层，所述遮光层设置于所述第一挡墙上，并延伸至所述光学膜片组背离所述微型发光二极管灯板的一面的部分区域的上方，且所述遮光层和所述光学膜片组之间具有一空气间隙。在纵向上，所述第一挡墙的顶端高于所述光学膜片组的顶端，以使所述遮光层和所述光学膜片组之间形成所述空气间隙，所述空气间隙的作用是：留存所述光学膜片组、所述微型发光二极管灯板等组件形变的空间，防止所述背光模组在高温或低温环境下出现变形的问题。\n\n[0049]在本申请的第一实施例中，如图2所示，所述背光模组包括：一微型发光二极管灯板1、一光学膜片组2、一第一挡墙3、一FPC板4以及一遮光层5。其中，所述微型发光二极管灯板1包括：一基板11、多个Mini-LED12以及一保护层13，所述多个Mini-LED12布设于所述基板11上，相邻所述Mini-LED12之间等距；所述保护层13完全覆盖于所述多个Mini-LED12上，以及部分覆盖于所述基板11上以预留出所述第一挡墙3的位置；所述基板11为PCB板或BT板。所述光学膜片组2层叠设置于所述微型发光二极管灯板1的一面上。所述FPC板4与所述微型发光二极管灯板1相连接。\n\n[0050]所述第一挡墙3设置于所述保护层13的周围，并位于所述基板11上。所述遮光层5设置于所述第一挡墙3上，并延伸至所述光学膜片组2背离所述微型发光二极管灯板1的一面的部分区域的上方，且所述遮光层5和所述光学膜片组2之间具有一空气间隙6。\n\n[0051]相较于图1中现有的Mini-LED背光模组，所述第一实施例中的背光模组省略了金属背板、双面胶层、胶框以及金属挡墙，从而极大地减薄了Mini-LED背光模组的厚度，并且实现更窄边框。\n\n[0052]在本申请的第二实施例中，如图3所示，所述背光模组包括：一微型发光二极管灯板1、一光学膜片组2、一第一挡墙3、一遮光层5以及一第二挡墙7。其中，所述光学膜片组2层叠设置于所述微型发光二极管灯板1的一面上；所述微型发光二极管灯板1包括：一基板11、多个Mini-LED12以及一保护层13，所述多个Mini-LED12布设于所述基板上，相邻所述Mini-LED12之间等距；所述保护层13完全覆盖于所述多个Mini-LED12上，以及部分覆盖于所述基板11上以预留出所述第一挡墙3的位置。\n\n[0053]所述基板11包括：一FPC板4以及一金属板8，其中，所述FPC板4的一面上布设有多个Mini-LED12。所述金属板8层叠设置于所述FPC板4的一面上，并且与所述多个Mini-LED12相背设置；所述金属板8的材质为不锈钢。所述多个Mini-LED12与所述FPC板4电性连接。\n\n[0054]所述第一挡墙3设置于所述保护层13的周围，并位于所述基板11上。所述第二挡墙7设置于所述第一挡墙3的外侧，并位于所述微型发光二极管灯板1的周围。所述第二挡墙7的材质为不锈钢，所述第二挡墙7与所述金属板8为一体成型结构。所述第一挡墙3与所述第二挡墙7相契合，以使所述第一挡墙3与所述第二挡墙7之间无间隙。\n\n[0055]所述遮光层5设置于所述第一挡墙3上，并延伸至所述光学膜片组2背离所述微型发光二极管灯板1的一面的部分区域的上方，且所述遮光层5和所述光学膜片组2之间具有一空气间隙6。\n\n[0056]相较于图1中现有的Mini-LED背光模组，所述第二实施例中的背光模组省略了双面胶层和胶框，从而极大地减薄了Mini-LED背光模组的厚度，并且实现更窄边框。\n\n[0057]在本申请的第三实施例中，如图4所示，所述背光模组包括：一微型发光二极管灯板1、一光学膜片组2、一第一挡墙3、一FPC板4、一遮光层5以及一第二挡墙7。其中，所述微型发光二极管灯板1包括：一基板11、多个Mini-LED12以及一保护层13，所述多个Mini-LED12布设于所述基板11上，相邻所述Mini-LED12之间等距；所述保护层13完全覆盖于所述多个Mini-LED12和所述基板11上；所述基板11为铝基板。所述多个Mini-LED12与所述基板电性连接，且所述FPC板4与所述微型发光二极管灯板1相连接。所述光学膜片组2层叠设置于所述微型发光二极管灯板1的一面上。\n\n[0058]所述第一挡墙3设置于所述微型发光二极管灯板1靠近所述光学膜片组2的一面上的四周边缘处，即设置于所述保护层13上。所述第二挡墙7设置于所述第一挡墙3的外侧，并且位于所述微型发光二极管灯板1的周围。此外，所述第一挡墙3和所述第二挡墙7相契合以使两者之间无间隙，并且所述第二挡墙7与所述微型发光二极管灯板1之间亦无间隙。\n\n[0059]所述遮光层5设置于所述第一挡墙3上，并延伸至所述光学膜片组2背离所述微型发光二极管灯板1的一面的部分区域的上方，且所述遮光层5和所述光学膜片组2之间具有一空气间隙6。\n\n[0060]相较于图1中现有的Mini-LED背光模组，所述第三实施例中的背光模组省略了双面胶层和胶框，并将现有背光模组中的所述载板和所述金属背板合并为一铝基板，从而极大地减薄了Mini-LED背光模组的厚度，并且实现更窄边框。此外，直接使用铝基板取代现有背光模组中的载板和金属背板，能极大地提升散热性能，尤其适用于分区较多、运算量较大的液晶显示模组(LCD Module,LCM)。\n\n[0061]第二方面，本申请实施例提供了一种背光模组的制备方法，用于制备第一方面中所述的背光模组。所述制备方法包括如下步骤：制备所述微型发光二极管灯板和所述第一挡墙的一体化结构，获得具有一预期形状的一组合体；以及，提供一光学膜片组，将所述光学膜片组与所述组合体对向贴合为一体，获得所述背光模组。\n\n[0062]优选地，采用膜压工艺结合切割工艺制备所述微型发光二极管灯板和所述第一挡墙的一体化结构。\n\n[0063]在一些实施例中，所述制备方法还包括步骤：在所述第一挡墙上贴附一遮光胶以形成一遮光层，所述遮光层延伸至所述光学膜片组背离所述微型发光二极管灯板的一面的部分区域的上方，且所述遮光层和所述光学膜片组之间形成有一空气间隙。该步骤在将所述光学膜片组装配至所述组合体的步骤之后。\n\n[0064]在本申请的第四个实施例中，提供了一种背光模组的制备方法，用于制备第一实施例中的所述背光模组，所述制备方法包括如下步骤：\n\n[0065]S1、制备一微型发光二极管灯板。\n\n[0066]具体的，所述步骤S1的操作流程为：首先，提供一PCB板或BT板作为所述微型发光二极管灯板的基板；然后，将所述多个Mini-LED焊接固定于所述基板上；最后，将所述保护层的材料喷涂于所述多个Mini-LED和所述基板上。\n\n[0067]S2、提供一FPC板，将所述FPC板焊接固定于所述微型发光二极管灯板上。\n\n[0068]S3、制备所述微型发光二极管灯板和所述第一挡墙的一体化结构，获得具有一预期形状的一组合体。\n\n[0069]具体的，所述步骤S3包括如下步骤：\n\n[0070]S3.1、第一次膜压步骤：在所述微型发光二极管灯板上膜压形成一涂层，所述涂层的材质为透明胶水。\n\n[0071]S3.2、第一次切割步骤：对具有所述涂层的所述微型发光二极管灯板进行切割，获得具有一特定形状的所述微型发光二极管灯板。\n\n[0072]S3.3、第二次膜压步骤：在所述具有一特定形状的所述微型发光二极管灯板的周围膜压形成一第一挡墙。\n\n[0073]S3.4、二次切割步骤：对所述第一挡墙进行切割，获得所述具有一预期形状的一组合体。\n\n[0074]需要说明的是，在所述步骤3.2中所述透明胶水中可以添加有适量的荧光粉，荧光粉的添加量可依据实际需要自行选择，在此不作具体限定。\n\n[0075]S4、在所述组合体上装配所述光学膜片组。\n\n[0076]具体的，所述步骤S4的操作流程为：提供一光学膜片组，将所述光学膜片组与所述组合体对向贴合为一体。\n\n[0077]S5、在装配有所述光学膜片组的所述组合体上制备形成一遮光层，获得所述背光模组。\n\n[0078]具体的，在所述第一挡墙上贴附一遮光胶以形成一遮光层，所述遮光层延伸至所述光学膜片组背离所述微型发光二极管灯板的一面的部分区域的上方，且所述遮光层和所述光学膜片组之间形成有一空气间隙。\n\n[0079]在本申请的第五个实施例中，提供了一种背光模组的制备方法，用于制备第二实施例中的所述背光模组，所述制备方法包括如下步骤：\n\n[0080]S10、制备一微型发光二极管灯板和所述第二挡墙的一体化结构，获得具有一预期形状的第一组合体。\n\n[0081]具体的，所述步骤S10的操作流程为：首先，将一不锈钢材料通过模具制成所述第二挡墙与所述金属板的一体成型结构，获得第一成型结构；接着，提供一FPC板，将所述第一成型结构与所述FPC板膜压一体成型，然后切割以获得第二成型结构；然后，将所述多个Mini-LED焊接固定于所述第二成型结构上；最后，将所述保护层的材料喷涂于所述多个Mini-LED和所述第二成型结构上，以获得具有一预期形状的第一组合体。\n\n[0082]S20、制备所述第一组合体和所述第一挡墙的一体化结构，获得具有一预期形状的第二组合体。\n\n[0083]具体的，所述步骤S20参考前述步骤S3进行，在此不再赘述。\n\n[0084]S30、在所述第二组合体上装配所述光学膜片组。\n\n[0085]具体的，所述步骤S30参考前述步骤S4进行，在此不再赘述。\n\n[0086]S40、在装配有所述光学膜片组的所述第二组合体上制备形成一遮光层，获得所述背光模组。\n\n[0087]具体的，所述步骤S40参考前述步骤S5进行，在此不再赘述。\n\n[0088]在本申请的第六个实施例中，提供了一种背光模组的制备方法，用于制备第三实施例中的所述背光模组，所述制备方法包括如下步骤：\n\n[0089]S100、制备一微型发光二极管灯板。\n\n[0090]具体的，所述步骤S100的操作流程为：首先，提供一铝基板作为所述微型发光二极管灯板的基板；然后，将所述多个Mini-LED焊接固定于所述铝基板上；最后，将所述保护层的材料喷涂于所述多个Mini-LED和所述铝基板上。\n\n[0091]S200、提供一FPC板，将所述FPC板焊接固定于所述微型发光二极管灯板上。\n\n[0092]S300、制备所述微型发光二极管灯板和所述第一挡墙的一体化结构，获得具有一预期形状的一第一组合体。\n\n[0093]具体的，所述步骤S300参考前述步骤S3进行，在此不再赘述。\n\n[0094]S400、制备所述第一组合体和所述第二挡墙的一体化结构，获得具有一预期形状的一第二组合体。\n\n[0095]具体的，所述第一组合体和所述第二挡墙通过膜压工艺形成一体化结构(可以参照前述步骤S3进行)，然后切割形成具有一预期形状的一第二组合体。\n\n[0096]S500、在所述第二组合体上装配所述光学膜片组。\n\n[0097]具体的，所述步骤S500参考前述步骤S4进行，在此不再赘述。\n\n[0098]S600、在装配有所述光学膜片组的所述第二组合体上制备形成一遮光层，获得所述背光模组。\n\n[0099]具体的，所述步骤S600参考前述步骤S5进行，在此不再赘述。\n\n[0100]需要说明的是，第四个实施例至第六个实施例中涉及的“切割”是采用激光或刀轮对目标对象进行切割。此外，对于制备所述背光模组，可采用其他一体成型工艺制备一体化结构的所述微型发光二极管灯板，以及所述微型发光二极管灯板、所述第一挡墙和/或所述第二挡墙的一体化结构，本申请实施例优选膜压一体成型工艺，但并非作出具体限定，可依据实际需要自行选择合适的一体成型工艺。\n\n[0101]第三方面，本申请实施例提供了一种显示装置，所述显示装置可为手机、电脑、数码相机、数码摄像机、游戏机、音频再生装置、信息终端机、智能可穿戴设备、智能称重电子秤、车载显示器、电视机等任何具有显示功能的产品或部件，其中，所述智能可穿戴设备可为智能手环、智能手表、智能眼镜等。\n\n[0102]所述显示装置包括：一如第一方面中所述的背光模组以及一显示面板，所述显示面板位于所述背光模组的出光侧。所述背光模组可以在整个出光面内均匀的发出光线，用于为所述显示面板提供亮度重组且分布均匀的光线，以使所述显示面板可以正常显示影像。所述背光模组可以采用Mini-LED作为光源，也可以采用Micro-LED作为光源。\n\n[0103]所述显示面板具有多个呈阵列分布的像素单元，每个像素单元都可以独立控制背光模组入射于其内的光线透过率和色彩，以对所述背光模组射出的光线进行调制，实现图像显示。所述显示面板可以是现有技术中的产品，在此不再赘述。\n\n[0104]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0105]以上对本申请实施例所提供的一种背光模组及其制备方法与显示装置，进行了详细介绍。本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10864, 23918, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种液晶显示屏及液晶显示装置。\n\n背景技术\n\n[0002]随着显示技术的广泛发展和深入应用，对具有更优视觉体验的高屏占比(甚至全面屏)显示屏的追求已成为当前显示技术发展的潮流之一。如屏下指纹识别技术、屏下传感技术和屏下摄像头技术等均极大的提升了显示屏的屏占比。屏下指纹技术是将指纹识别模组做到显示区内，既减少了整机的装配又可以很好的实现全面屏。目前市面所推出的LCD(Liquid Crystal Display，液晶显示)屏下指纹产品多是采用侧入式红外LED(LightEmitting Diode，发光二极管)。把红外LED设置在产品盖板(Cover Glass，CG)下方且靠近中框的位置，而且盖板在对应红外LED的区域还需设置红外油墨。如此既增加了下边框(border)的尺寸，又增加了匹配红外油墨的盖板成本。\n\n[0003]因此，现有LCD屏下指纹识别光源采用侧入式设置影响实现全面屏的问题需要解决。\n\n发明内容\n\n[0004]本发明提供一种液晶显示屏及液晶显示装置，以缓解现有LCD屏下指纹识别光源采用侧入式设置影响实现全面屏的技术问题。\n\n[0005]为解决上述问题，本发明提供的技术方案如下：\n\n[0006]本发明实施例提供一种液晶显示屏，其包括显示面板、背光模组、及指纹识别模组。所述背光模组设置于所述显示面板的相对下方。所述指纹识别模组设置于所述背光模组的下方。其中所述背光模组包括背板和LED灯板。所述背板形成有容纳腔。所述LED灯板设置于所述容纳腔底部。所述LED灯板上设置有多个第一mini LED芯片和多个第二mini LED芯片，所述第一mini LED芯片用于给所述显示面板提供背光，所述第二mini LED芯片用于给所述指纹识别模组提供光源。其中，所述背光模组上设置有通孔，所述通孔贯穿部分所述背板和所述LED灯板，所述指纹识别模组设置在所述通孔内。所述第二mini LED芯片分布在所述通孔的周围。\n\n[0007]在本发明实施例提供的液晶显示屏中，所述LED灯板划分为多个第一分区和一个第二分区，每个所述第一分区设置有多个所述第一mini LED芯片，所述第二分区设置有多个所述第二mini LED芯片。\n\n[0008]在本发明实施例提供的液晶显示屏中，每个所述第一分区和所述第二分区的控制单元不同。\n\n[0009]在本发明实施例提供的液晶显示屏中，每个所述第一分区内的多个所述第一miniLED芯片之间并联连接。\n\n[0010]在本发明实施例提供的液晶显示屏中，所述第一mini LED芯片包括蓝光miniLED，所述第二mini LED芯片包括红外mini LED。\n\n[0011]在本发明实施例提供的液晶显示屏中，所述背光模组还包括光转换膜、渐变式雾度膜片，所述光转换膜设置在所述LED灯板上，所述渐变式雾度膜片设置所述光转化膜上，其中所述光转换膜用于把所述第一mini LED芯片发出的光转换成白光。\n\n[0012]在本发明实施例提供的液晶显示屏中，所述渐变式雾度膜片包括高透过区和高雾度区，其中所述高透过区对应于所述指纹识别模组的设置区域，所述高雾度区对应于所述第二mini LED芯片的设置区域。\n\n[0013]在本发明实施例提供的液晶显示屏中，所述光转化膜包括量子点膜。\n\n[0014]在本发明实施例提供的液晶显示屏中，所述量子点膜内设置有红色量子点和绿色量子点。\n\n[0015]本发明实施例还提供一种液晶显示装置，其包括前述实施例其中之一的液晶显示屏。\n\n[0016]本发明的有益效果为：本发明提供的液晶显示屏及液晶显示装置把屏下指纹识别模组的光源与背光模组的背光光源一块设置在LED灯板，并配合区域背光调光技术实现各分区的光源分开控制。以此实现指纹识别模组的光源直下式设置，不再占用液晶显示屏的下边框，提高了液晶显示屏的高屏占比，实现了更高屏占比的全面屏。\n\n附图说明\n\n[0017]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0018]图1为本发明实施例提供的液晶显示屏的剖面结构示意图；\n\n[0019]图2为本发明实施例提供的LED灯板上mini LED芯片排布结构的俯视示意图；\n\n[0020]图3为本发明实施例提供的第一分区内第一mini LED芯片的连接电路示意图；\n\n[0021]图4为本发明实施例提供的显示面板的剖面结构示意图；\n\n[0022]图5为本发明实施例提供的液晶显示装置的剖面结构示意图。\n\n具体实施方式\n\n[0023]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。在附图中，为了清晰理解和便于描述，夸大了一些层和区域的厚度。即附图中示出的每个组件的尺寸和厚度是任意示出的，但是本发明不限于此。\n\n[0024]在一种实施例中，请参照图1所示的液晶显示屏100，所述液晶显示屏100能够实现屏下指纹识别。所述液晶显示屏100包括显示面板20、背光模组10、及指纹识别模组30。所述背光模组10设置于所述显示面板20的相对下方。所述指纹识别模组30设置于所述背光模组10的下方。所述显示面板20位于所述背光模组10的上方，也即所述显示面板20位于所述背光模组10的出光方向上。\n\n[0025]具体的，所述液晶显示屏100还包括分别贴附于所述显示面板20上表面和下表面的上偏光片40和下偏光片50。所述显示面板20的上表面也即所述显示面板20背离所述背光模组10的一面，所述显示面板20的下表面也即所述显示面板20面向所述背光模组10的一面。\n\n[0026]进一步的，所述背光模组10包括背板11和LED灯板12。所述背板11形成有容纳腔111。所述LED灯板12设置于所述容纳腔111的底部，当然的，所述LED灯板12的下方还可以设置有反射片17。所述LED灯板12上设置有多个第一mini LED芯片122和多个所述第二miniLED芯片121，所述第一mini LED芯片122用于给所述显示面板20提供背光，所述第二miniLED芯片121用于给所述指纹识别模组30提供光源。\n\n[0027]具体的，所述LED灯板12还包括透明基底123和封装层124。所述第一mini LED芯片122和所述第二mini LED芯片121均设置在所述透明基底123上。所述透明基板123用于支撑所述第一mini LED芯片122和所述第二mini LED芯片121。当然的，所述透明基材123还设置有用于驱动所述第一mini LED芯片122和所述第二mini LED芯片121的主动矩阵驱动电路。所述封装层124设置在所述第一mini LED芯片122和所述第二mini LED芯片121上，用于保护所述第一mini LED芯片122和所述第二mini LED芯片121。\n\n[0028]进一步的，所述背光模组10上设置有通孔60，所述通孔60贯穿部分所述背板11、所述反射片17、及所述LED灯板12。所述指纹识别模组30设置在所述通孔60内。所述第二miniLED芯片121分布在所述通孔60的周围。所述指纹识别模组30包括底板31、光感传感器32、及透镜33，所述透镜33设置在所述光感传感器32上方，用于汇聚要到达所述光感传感器32的光线。所述光感传感器32设置在所述底板31上，用于接收并识别达到所述光感传感器32的光。所述指纹识别模组30可通过固定构件34固定在所述背板11上，但本发明不以此为限，本发明的液晶显示屏100还可包括中框，所述指纹识别模组30也可通过固定构件固定在所述中框上。\n\n[0029]具体的，请结合参照图1和图2，图2为图1中所述LED灯板12上所述第一mini LED芯片122和所述第二mini LED芯片121的排布俯视示意图。可以理解的是，图2为了清楚示出所述第一mini LED芯片122和所述第二mini LED芯片121的排布情况，移除了所述第一miniLED芯片122和所述第二mini LED芯片121上的封装层124。参照图2，所述LED灯板12划分为多个第一分区125和一个第二分区126(图2示例性的示出了三个第一分区125和一个第二分区126)，每个所述第一分区125设置有多个所述第一mini LED芯片122，所述第二分区126设置有多个所述第二mini LED芯片121。每个所述第一分区125和所述第二分区126的控制单元不同。具体的，所述LED灯板12上的各个所述第一分区125，均有独立的控制单元控制，使各个所述第一分区125的亮度可控，实现区域背光调光，可提高液晶显示屏100的对比度并降低功耗。所述第二分区126也有单独的控制单元控制，以给所述指纹识别模组30提供光源，且不影响所述显示面板20正常显示需要的背光。\n\n[0030]进一步的，每个所述第一分区125设置的多个所述第一mini LED芯片122均匀有序排布。如图2所示所述第一分区125内设置16个所述第一mini LED芯片122，但本发明不以此为限。16个所述第一mini LED芯片122均匀有序排布呈四行四列。\n\n[0031]进一步的，结合参照图2和图3，第一分区125内的16个所述第一mini LED芯片122之间互相并联连接，每一所述第一mini LED芯片122一端连接高电位+，另一端连接低电位-。任何一个所述第一mini LED芯片122出现异常后，不影响其他所述第一mini LED芯片122的正常工作。\n\n[0032]进一步的，所述第二分区126内的所述第二mini LED芯片121均匀有序排列在所述通孔60的周围。各所述第二mini LED芯片121之间的间距相同。所述第二mini LED芯片121的数量可根据指纹识别模组30中的光感传感器的感光识别能力来确定，例如可设置4至6颗，但本发明不以此为限。\n\n[0033]进一步的，所述第一mini LED芯片122包括蓝光mini LED，蓝光mini LED发射蓝光。所述第二mini LED芯片121包括红外mini LED，红外mini LED发射红外光。\n\n[0034]进一步的，继续参照图1，所述背光模组10还包括光转换膜14、渐变式雾度膜片15，所述光转换膜14设置在所述LED灯板12上，所述渐变式雾度膜片15设置所述光转化膜14上。其中所述光转换膜14用于把所述第一mini LED芯片122发出的蓝光转换成白光。所述第一mini LED芯片122发出的蓝光经过所述光转换膜14后被转换成白光。同时部分光可能会被反射到所述反射片17。所述反射片17能够把这部分光线再反射回所述光转换膜14，以提高光线的利用率。所述第二mini LED芯片121发出的红外光直接透过所述光转化膜14。\n\n[0035]具体的，所述光转换膜14包括量子点膜，所述量子点膜内设置有红色量子点和绿色量子点。量子点(Quantum Dots，QDs)是由半导体材料构成的核壳结构，包括量子点中心核和外层壳。量子点的粒径一般在10纳米左右。可以通过调节量子点的尺寸来改变它的能带结构，因而受到光源发出的光的激发，可以发射出不同波长的光。故所述第一mini LED芯片122发出的蓝光经过所述量子点膜，激发量子点膜内的红色量子点发出红光，激发量子点膜内的绿色量子点发出绿光。直接透过所述量子点膜的蓝光与红光和绿光混合，以白光从所述量子点膜出射。\n\n[0036]进一步的，继续参照图1，所述渐变式雾度膜片15包括高透过区151和高雾度区152，其中所述高透过区151对应于所述指纹识别模组30的设置区域，所述高雾度区152对应于所述第二mini LED芯片121的设置区域。所述高透过区151能够使指纹反射回来的红外光更多的透过所述渐变式雾度膜片15到达所述指纹识别模组30。所述高雾度区152能够遮挡所述第二mini LED芯片121的灯影，所述第二mini LED芯片121的灯影是指所述第二miniLED芯片121出光口处亮度不均的问题。\n\n[0037]可以理解的是，所述背光模组还可包括其他光学膜片16，例如增亮膜等。所述其他光学膜片16设置在所述渐变式雾度膜片15上。\n\n[0038]具体的，请结合参照图1和图4，所述显示面板20包括相对设置的第一基板21和第二基板22、设置于第一基板21和第二基板22之间的多个液晶分子23、以及设置在所述第一基板21和所述第二基板22边缘区域的封框胶24。所述封框胶24用于密封所述多个液晶分子23，并粘结所述第一基板21和所述第二基板22。所述第一基板21靠近所述背光模组10，所述第二基板22远离所述背光模组10。其中，所述下偏光片50贴附于第一基板21远离所述第二基板22的表面上，所述上偏光片40贴附于所述第二基板22远离所述第一基板21的表面上。所述第一基板21为阵列基板，所述第二基板22为彩膜基板。当然的，所述第一基板21也可以为非常规阵列基板，如GOA(Gate Driver on Array，阵列基板行驱动)基板或COA(Color-filter on Array，阵列上彩膜层)基板等。\n\n[0039]在一种实施例中，如图5所示，提供一种显示装置1000，其包括上述实施例的液晶显示屏100、控制模组200及背盖300。\n\n[0040]根据上述实施例可知：\n\n[0041]本发明提供一种液晶显示屏及液晶显示装置，液晶显示屏包括显示面板、背光模组、及指纹识别模组。所述背光模组设置于所述显示面板的相对下方。所述指纹识别模组设置于所述背光模组的下方。其中所述背光模组包括背板和LED灯板。所述背板形成有容纳腔。所述LED灯板设置于所述容纳腔底部。所述LED灯板上设置有多个第一mini LED芯片和多个第二mini LED芯片，所述第一mini LED芯片用于给所述显示面板提供背光，所述第二mini LED芯片用于给所述指纹识别模组提供光源。通过把屏下指纹识别模组的光源与背光模组的背光光源一块设置在LED灯板，并配合区域背光调光技术实现各分区的光源分开控制。以此实现指纹识别模组的光源直下式设置，不再占用液晶显示屏的下边框，提高了液晶显示屏的高屏占比，实现了更高屏占比的全面屏。\n\n[0042]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种液晶显示屏及液晶显示装置。\n\n背景技术\n\n[0002]随着显示技术的广泛发展和深入应用，对具有更优视觉体验的高屏占比(甚至全面屏)显示屏的追求已成为当前显示技术发展的潮流之一。如屏下指纹识别技术、屏下传感技术和屏下摄像头技术等均极大的提升了显示屏的屏占比。屏下指纹技术是将指纹识别模组做到显示区内，既减少了整机的装配又可以很好的实现全面屏。目前市面所推出的LCD(Liquid Crystal Display，液晶显示)屏下指纹产品多是采用侧入式红外LED(LightEmitting Diode，发光二极管)。把红外LED设置在产品盖板(Cover Glass，CG)下方且靠近中框的位置，而且盖板在对应红外LED的区域还需设置红外油墨。如此既增加了下边框(border)的尺寸，又增加了匹配红外油墨的盖板成本。\n\n[0003]因此，现有LCD屏下指纹识别光源采用侧入式设置影响实现全面屏的问题需要解决。\n\n发明内容\n\n[0004]本发明提供一种液晶显示屏及液晶显示装置，以缓解现有LCD屏下指纹识别光源采用侧入式设置影响实现全面屏的技术问题。\n\n[0005]为解决上述问题，本发明提供的技术方案如下：\n\n[0006]本发明实施例提供一种液晶显示屏，其包括显示面板、背光模组、及指纹识别模组。所述背光模组设置于所述显示面板的相对下方。所述指纹识别模组设置于所述背光模组的下方。其中所述背光模组包括背板和LED灯板。所述背板形成有容纳腔。所述LED灯板设置于所述容纳腔底部。所述LED灯板上设置有多个第一mini LED芯片和多个第二mini LED芯片，所述第一mini LED芯片用于给所述显示面板提供背光，所述第二mini LED芯片用于给所述指纹识别模组提供光源。其中，所述背光模组上设置有通孔，所述通孔贯穿部分所述背板和所述LED灯板，所述指纹识别模组设置在所述通孔内。所述第二mini LED芯片分布在所述通孔的周围。\n\n[0007]在本发明实施例提供的液晶显示屏中，所述LED灯板划分为多个第一分区和一个第二分区，每个所述第一分区设置有多个所述第一mini LED芯片，所述第二分区设置有多个所述第二mini LED芯片。\n\n[0008]在本发明实施例提供的液晶显示屏中，每个所述第一分区和所述第二分区的控制单元不同。\n\n[0009]在本发明实施例提供的液晶显示屏中，每个所述第一分区内的多个所述第一miniLED芯片之间并联连接。\n\n[0010]在本发明实施例提供的液晶显示屏中，所述第一mini LED芯片包括蓝光miniLED，所述第二mini LED芯片包括红外mini LED。\n\n[0011]在本发明实施例提供的液晶显示屏中，所述背光模组还包括光转换膜、渐变式雾度膜片，所述光转换膜设置在所述LED灯板上，所述渐变式雾度膜片设置所述光转化膜上，其中所述光转换膜用于把所述第一mini LED芯片发出的光转换成白光。\n\n[0012]在本发明实施例提供的液晶显示屏中，所述渐变式雾度膜片包括高透过区和高雾度区，其中所述高透过区对应于所述指纹识别模组的设置区域，所述高雾度区对应于所述第二mini LED芯片的设置区域。\n\n[0013]在本发明实施例提供的液晶显示屏中，所述光转化膜包括量子点膜。\n\n[0014]在本发明实施例提供的液晶显示屏中，所述量子点膜内设置有红色量子点和绿色量子点。\n\n[0015]本发明实施例还提供一种液晶显示装置，其包括前述实施例其中之一的液晶显示屏。\n\n[0016]本发明的有益效果为：本发明提供的液晶显示屏及液晶显示装置把屏下指纹识别模组的光源与背光模组的背光光源一块设置在LED灯板，并配合区域背光调光技术实现各分区的光源分开控制。以此实现指纹识别模组的光源直下式设置，不再占用液晶显示屏的下边框，提高了液晶显示屏的高屏占比，实现了更高屏占比的全面屏。\n\n附图说明\n\n[0017]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0018]图1为本发明实施例提供的液晶显示屏的剖面结构示意图；\n\n[0019]图2为本发明实施例提供的LED灯板上mini LED芯片排布结构的俯视示意图；\n\n[0020]图3为本发明实施例提供的第一分区内第一mini LED芯片的连接电路示意图；\n\n[0021]图4为本发明实施例提供的显示面板的剖面结构示意图；\n\n[0022]图5为本发明实施例提供的液晶显示装置的剖面结构示意图。\n\n具体实施方式\n\n[0023]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。在附图中，为了清晰理解和便于描述，夸大了一些层和区域的厚度。即附图中示出的每个组件的尺寸和厚度是任意示出的，但是本发明不限于此。\n\n[0024]在一种实施例中，请参照图1所示的液晶显示屏100，所述液晶显示屏100能够实现屏下指纹识别。所述液晶显示屏100包括显示面板20、背光模组10、及指纹识别模组30。所述背光模组10设置于所述显示面板20的相对下方。所述指纹识别模组30设置于所述背光模组10的下方。所述显示面板20位于所述背光模组10的上方，也即所述显示面板20位于所述背光模组10的出光方向上。\n\n[0025]具体的，所述液晶显示屏100还包括分别贴附于所述显示面板20上表面和下表面的上偏光片40和下偏光片50。所述显示面板20的上表面也即所述显示面板20背离所述背光模组10的一面，所述显示面板20的下表面也即所述显示面板20面向所述背光模组10的一面。\n\n[0026]进一步的，所述背光模组10包括背板11和LED灯板12。所述背板11形成有容纳腔111。所述LED灯板12设置于所述容纳腔111的底部，当然的，所述LED灯板12的下方还可以设置有反射片17。所述LED灯板12上设置有多个第一mini LED芯片122和多个所述第二miniLED芯片121，所述第一mini LED芯片122用于给所述显示面板20提供背光，所述第二miniLED芯片121用于给所述指纹识别模组30提供光源。\n\n[0027]具体的，所述LED灯板12还包括透明基底123和封装层124。所述第一mini LED芯片122和所述第二mini LED芯片121均设置在所述透明基底123上。所述透明基板123用于支撑所述第一mini LED芯片122和所述第二mini LED芯片121。当然的，所述透明基材123还设置有用于驱动所述第一mini LED芯片122和所述第二mini LED芯片121的主动矩阵驱动电路。所述封装层124设置在所述第一mini LED芯片122和所述第二mini LED芯片121上，用于保护所述第一mini LED芯片122和所述第二mini LED芯片121。\n\n[0028]进一步的，所述背光模组10上设置有通孔60，所述通孔60贯穿部分所述背板11、所述反射片17、及所述LED灯板12。所述指纹识别模组30设置在所述通孔60内。所述第二miniLED芯片121分布在所述通孔60的周围。所述指纹识别模组30包括底板31、光感传感器32、及透镜33，所述透镜33设置在所述光感传感器32上方，用于汇聚要到达所述光感传感器32的光线。所述光感传感器32设置在所述底板31上，用于接收并识别达到所述光感传感器32的光。所述指纹识别模组30可通过固定构件34固定在所述背板11上，但本发明不以此为限，本发明的液晶显示屏100还可包括中框，所述指纹识别模组30也可通过固定构件固定在所述中框上。\n\n[0029]具体的，请结合参照图1和图2，图2为图1中所述LED灯板12上所述第一mini LED芯片122和所述第二mini LED芯片121的排布俯视示意图。可以理解的是，图2为了清楚示出所述第一mini LED芯片122和所述第二mini LED芯片121的排布情况，移除了所述第一miniLED芯片122和所述第二mini LED芯片121上的封装层124。参照图2，所述LED灯板12划分为多个第一分区125和一个第二分区126(图2示例性的示出了三个第一分区125和一个第二分区126)，每个所述第一分区125设置有多个所述第一mini LED芯片122，所述第二分区126设置有多个所述第二mini LED芯片121。每个所述第一分区125和所述第二分区126的控制单元不同。具体的，所述LED灯板12上的各个所述第一分区125，均有独立的控制单元控制，使各个所述第一分区125的亮度可控，实现区域背光调光，可提高液晶显示屏100的对比度并降低功耗。所述第二分区126也有单独的控制单元控制，以给所述指纹识别模组30提供光源，且不影响所述显示面板20正常显示需要的背光。\n\n[0030]进一步的，每个所述第一分区125设置的多个所述第一mini LED芯片122均匀有序排布。如图2所示所述第一分区125内设置16个所述第一mini LED芯片122，但本发明不以此为限。16个所述第一mini LED芯片122均匀有序排布呈四行四列。\n\n[0031]进一步的，结合参照图2和图3，第一分区125内的16个所述第一mini LED芯片122之间互相并联连接，每一所述第一mini LED芯片122一端连接高电位+，另一端连接低电位-。任何一个所述第一mini LED芯片122出现异常后，不影响其他所述第一mini LED芯片122的正常工作。\n\n[0032]进一步的，所述第二分区126内的所述第二mini LED芯片121均匀有序排列在所述通孔60的周围。各所述第二mini LED芯片121之间的间距相同。所述第二mini LED芯片121的数量可根据指纹识别模组30中的光感传感器的感光识别能力来确定，例如可设置4至6颗，但本发明不以此为限。\n\n[0033]进一步的，所述第一mini LED芯片122包括蓝光mini LED，蓝光mini LED发射蓝光。所述第二mini LED芯片121包括红外mini LED，红外mini LED发射红外光。\n\n[0034]进一步的，继续参照图1，所述背光模组10还包括光转换膜14、渐变式雾度膜片15，所述光转换膜14设置在所述LED灯板12上，所述渐变式雾度膜片15设置所述光转化膜14上。其中所述光转换膜14用于把所述第一mini LED芯片122发出的蓝光转换成白光。所述第一mini LED芯片122发出的蓝光经过所述光转换膜14后被转换成白光。同时部分光可能会被反射到所述反射片17。所述反射片17能够把这部分光线再反射回所述光转换膜14，以提高光线的利用率。所述第二mini LED芯片121发出的红外光直接透过所述光转化膜14。\n\n[0035]具体的，所述光转换膜14包括量子点膜，所述量子点膜内设置有红色量子点和绿色量子点。量子点(Quantum Dots，QDs)是由半导体材料构成的核壳结构，包括量子点中心核和外层壳。量子点的粒径一般在10纳米左右。可以通过调节量子点的尺寸来改变它的能带结构，因而受到光源发出的光的激发，可以发射出不同波长的光。故所述第一mini LED芯片122发出的蓝光经过所述量子点膜，激发量子点膜内的红色量子点发出红光，激发量子点膜内的绿色量子点发出绿光。直接透过所述量子点膜的蓝光与红光和绿光混合，以白光从所述量子点膜出射。\n\n[0036]进一步的，继续参照图1，所述渐变式雾度膜片15包括高透过区151和高雾度区152，其中所述高透过区151对应于所述指纹识别模组30的设置区域，所述高雾度区152对应于所述第二mini LED芯片121的设置区域。所述高透过区151能够使指纹反射回来的红外光更多的透过所述渐变式雾度膜片15到达所述指纹识别模组30。所述高雾度区152能够遮挡所述第二mini LED芯片121的灯影，所述第二mini LED芯片121的灯影是指所述第二miniLED芯片121出光口处亮度不均的问题。\n\n[0037]可以理解的是，所述背光模组还可包括其他光学膜片16，例如增亮膜等。所述其他光学膜片16设置在所述渐变式雾度膜片15上。\n\n[0038]具体的，请结合参照图1和图4，所述显示面板20包括相对设置的第一基板21和第二基板22、设置于第一基板21和第二基板22之间的多个液晶分子23、以及设置在所述第一基板21和所述第二基板22边缘区域的封框胶24。所述封框胶24用于密封所述多个液晶分子23，并粘结所述第一基板21和所述第二基板22。所述第一基板21靠近所述背光模组10，所述第二基板22远离所述背光模组10。其中，所述下偏光片50贴附于第一基板21远离所述第二基板22的表面上，所述上偏光片40贴附于所述第二基板22远离所述第一基板21的表面上。所述第一基板21为阵列基板，所述第二基板22为彩膜基板。当然的，所述第一基板21也可以为非常规阵列基板，如GOA(Gate Driver on Array，阵列基板行驱动)基板或COA(Color-filter on Array，阵列上彩膜层)基板等。\n\n[0039]在一种实施例中，如图5所示，提供一种显示装置1000，其包括上述实施例的液晶显示屏100、控制模组200及背盖300。\n\n[0040]根据上述实施例可知：\n\n[0041]本发明提供一种液晶显示屏及液晶显示装置，液晶显示屏包括显示面板、背光模组、及指纹识别模组。所述背光模组设置于所述显示面板的相对下方。所述指纹识别模组设置于所述背光模组的下方。其中所述背光模组包括背板和LED灯板。所述背板形成有容纳腔。所述LED灯板设置于所述容纳腔底部。所述LED灯板上设置有多个第一mini LED芯片和多个第二mini LED芯片，所述第一mini LED芯片用于给所述显示面板提供背光，所述第二mini LED芯片用于给所述指纹识别模组提供光源。通过把屏下指纹识别模组的光源与背光模组的背光光源一块设置在LED灯板，并配合区域背光调光技术实现各分区的光源分开控制。以此实现指纹识别模组的光源直下式设置，不再占用液晶显示屏的下边框，提高了液晶显示屏的高屏占比，实现了更高屏占比的全面屏。\n\n[0042]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10865, 23919, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种显示面板及显示装置。\n\n背景技术\n\n[0002]随着显示技术的发展，将传感器集成在显示面板之中也是一种趋势，比如目前所采用的触摸和光传感器都是将传感器贴合在显示屏的外面，但这样会导致显示面板的光效下降和成本的上升。目前，将传感器集成在显示面板内，可以有效的改善光效的损失和成本的上升。\n\n[0003]随着大尺寸显示技术的发展及在各领域的广泛应用，将各种传感器集成在显示面板之中也是一个待发展的主流趋势，特别是触控传感器和光传感器。但是将光控传感器和触控传感器同步集成，互电容光控传感器的电极对触控接受电极之间存在寄生电容，会影响触控传感器的正常工作，也就是光控传感器对触控传感器的信号串扰的问题。\n\n发明内容\n\n[0004]本申请实施例提供一种显示面板及显示装置，集成自电容触控传感模块与光控传感模块，能够有效的解决互电容模式触控传感器与光控传感器集成的信号串扰的问题。\n\n[0005]本申请提供一种显示面板，包括：\n\n[0006]基板，所述基板包括相对设置的第一面和第二面；\n\n[0007]自电容触控传感模块，所述自电容触控传感模块设置在所述第一面上；其中，所述自电容触控传感模块包括多个第一方向电极和多个第二方向电极，所述第一方向电极沿第一方向延伸，所述第二方向电极沿第二方向延伸，所述第一方向与所述第二方向相交；\n\n[0008]光控传感模块，所述光控传感模块设置在所述第一面上，所述光控传感模块与所述自电容触控传感模块相邻设置；\n\n[0009]盖板，所述盖板设置在所述自电容触控传感模块与所述光控传感模块远离所述第一面的一侧。\n\n[0010]在一些实施例中，还包括沿第一面向盖板方向依次层叠设置的栅极绝缘层、第一钝化层、有机平坦层以及光学胶层，所述第一方向电极和所述第二方向电极设置在所述栅极绝缘层或所述第一钝化层的相同层内。\n\n[0011]在一些实施例中，所述第一方向电极和所述第二方向电极均设置在所述第一钝化层内。\n\n[0012]在一些实施例中，所述第一方向电极和所述第二方向电极均设置在所述栅极绝缘层内。\n\n[0013]在一些实施例中，所述第一方向电极之间或所述第二方向电极之间通过透明导电材料桥接\n\n[0014]在一些实施例中，还包括沿第一面向盖板方向依次层叠设置的栅极绝缘层、第一钝化层、有机平坦层以及光学胶层，所述第一方向电极和所述第二方向电极设置在所述栅极绝缘层或所述第一钝化层的不同层内。\n\n[0015]在一些实施例中，所述第一方向电极设置在所述栅极绝缘层内，所述第二方向电极设置在所述第一钝化层内。\n\n[0016]在一些实施例中，还包括第二钝化层，所述第二钝化层设置在光学胶层与所述盖板之间，所述第一方向电极设置在所述第一钝化层内，所述第二方向电极设置在所述第二钝化层内。\n\n[0017]在一些实施例中，所述第一方向电极包括沿第一方向排布的第一多边形走线，所述第二方向电极包括沿第二方向排布的第二多边形走线，所述第一多边形走线与所述第二多边形走线相交处形成电容节点。\n\n[0018]本申请提供一种显示装置，包括显示器和显示面板，所述显示器为液晶显示器、有机电致发光显示器、量子点发光显示器、Mini-发光二极管显示器或Micro-发光二极管显示器，所述显示面板为以上所述的显示面板。\n\n[0019]本申请实施例所提供的显示面板，包括基板、自电容触控传感模块、光控传感模块和盖板。基板包括相对设置的第一面和第二面。自电容触控传感模块设置在所述第一面上；其中，自电容触控传感模块包括多个第一方向电极和多个第二方向电极，第一方向电极沿第一方向延伸，第二方向电极沿第二方向延伸，第一方向与第二方向相交。光控传感模块设置在所述第一面上，光控传感模块与自电容触控传感模块相邻设置。盖板设置在自电容触控传感模块与光控传感模块远离第一面的一侧。本申请采用自电容触控传感模块和光控传感模块集成于显示屏之中，相较于互电容触控传感模块，可实现更高的扫描频率和较高的抗噪性能，有利于将触控和光控传感器集成在大尺寸的显示屏之中。并且可以有效的解决互电容触控传感器与光控传感器集成的信号串扰的问题。\n\n附图说明\n\n[0020]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0021]图1为本申请实施例提供的显示面板的第一种膜层结构示意图；\n\n[0022]图2为本申请实施例提供的自电容触控传感模块的一种简化电路图；\n\n[0023]图3为本申请实施例提供的显示面板的第二种膜层结构示意图；\n\n[0024]图4为本申请实施例提供的显示面板的第三种膜层结构示意图；\n\n[0025]图5为本申请实施例提供的显示面板的第四种膜层结构示意图；\n\n[0026]图6为本申请实施例提供的光控传感模块的一种等效电路示意图；\n\n[0027]图7为本申请实施例提供的显示面板的一种等效电路示意图；\n\n[0028]图8为本申请实施例提供的显示装置的一种结构示意图。\n\n具体实施方式\n\n[0029]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0030]需要说明的是，在本申请的描述中，需要理解的是，术语“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。\n\n[0031]本申请实施例提供一种显示面板及显示装置，以下对显示面板做详细介绍。\n\n[0032]请参阅图1，图1是本申请实施例中的显示面板10的第一种膜层结构示意图。其中，显示面板10包括基板101、自电容触控传感模块102、光控传感模块103和盖板104，基板101具有相对设置的第一面101a和第二面101b。自电容触控传感模块102设置在第一面101a上，其中，自电容触控传感模块102包括多个第一方向电极102a和多个第二方向电极102b，第一方向电极102a沿第一方向延伸，第二方向电极102b沿第二方向延伸，第一方向与第二方向相交。\n\n[0033]本申请实施例提供的显示面板10同步集成光控传感模块103和自电容触控传感模块102，相较于单一功能的触控传感或者光控传感，可实现短程触控，远程光控的功能。并且相较于互电容触控传感器，本申请实施例提供的显示面板10可实现更高的扫描频率和较高的抗噪性能，还能解决互电容触控传感器与光控传感器信号串扰的问题。另外，本申请实施例提供的显示面板10在面板内集成了光控和触控传感，可以有效的改善光效的损失和成本的上升。\n\n[0034]需要说明的是，第一面101a可以为基板101的上表面，第二面101b可以为基板101的下表面。当然，第一面101a也可以为基板101的下表面，第二面101b可以为基板101的上表面。本申请实施例中不做特殊说明的情况下，默认为第一面101a为基板101的上表面，第二面101b为基板101的下表面。\n\n[0035]其中，显示面板10还包括沿第一面101a向盖板104方向依次层叠设置的栅极绝缘层105、第一钝化层106、有机平坦层107以及光学胶层108，第一方向电极102a和第二方向电极102b设置在栅极绝缘层105或第一钝化层106的不同层内。\n\n[0036]其中，第一方向电极102a设置在栅极绝缘层105内，第二方向电极102b设置在第一钝化层106内。这种设置方式能够增大第一方向电极102a和第二方向电极102b之间的距离，减小寄生电容。\n\n[0037]其中，自电容触控传感模块102还包括电容C，电容C为第一方向电极102a与第二方向电极102b之间的重合区域，图1中未示出。\n\n[0038]其中，光控传感模块103还包括栅极层103a、半导体层103b、源漏极层103c、遮光层103d以及透明导电层103e。具体地，栅极层103a设置在栅极绝缘层105内，半导体层103b和源漏极层103c设置在第一钝化层106内，遮光层103d设置在光学胶层108内，第一钝化层106和有机平坦层107上设置有通孔，透明导电层103e设置在光学胶层108内并通过通孔与源漏极层103c连接。图中以光控传感模块103包括两个薄膜晶体管(TFT,Thin FilmTransistor)为示例进行说明，遮光层103d对应其中一个薄膜晶体管的正投影进行设置，该TFT作为开关TFT进行工作，另一个TFT没有受到遮光层103d的遮挡则作为光感TFT进行工作。光控传感模块103还可以根据光控传感或显示面板的具体需求设置为三个薄膜晶体管、四个薄膜晶体管或五个薄膜晶体管。透明导电层103e为外围绑定走线。外围绑定走线的具体设置是本领域技术人员所熟知的技术手段，在此不再赘述。\n\n[0039]其中，第一方向电极102a与栅极层103a同步设置，第二方向电极102b与源漏极层103c同步设置。这样能够减少制程工艺步骤，提高生产效率，节约成本。\n\n[0040]其中，半导体层103b采用的材料为氢化非晶硅(α-Si:H)。α-Si:H材料的光吸收率高、电阻温度系数较大，并且其禁带宽度可控，可大面积低温成膜，生产工艺较简单。\n\n[0041]其中，光控传感模块103还包括电容C，电容C为栅极层103a与半导体层103b之间的重合区域，图1中未示出。受到光照刺激时，光感TFT中的α-Si:H会产生载流子，而通过储存电容C收集，然后通过开光TFT进行控制，经放大器处理及集成电路(IC,IntegratedCircuit)检测到，进而进行光控传感。\n\n[0042]其中，本申请实施例采用有机平坦层107。有机平坦层107(PFA)具有低介电特性、良好的流平性和透气性，还能降低寄生电容。\n\n[0043]其中，本申请实施例提供的自电容触控传感模块102采用metalmesh的走线方式，通常是在两层导电材料涂层上蚀刻出不同的导电线路模块，即本申请实施例中的第一方向电极102a和第二方向电极102b。第一方向电极102a和第二方向电极102b蚀刻的图形相互垂直，蚀刻的图形可以是菱形。由于第一方向电极102a和第二方向电极102b架构在不同层，其相交处形成一电容节点。在工作时，第一方向电极102a可以当成驱动线，第二方向电极102b当成是侦测线。当电流经过驱动线中的一条走线时，如果外界有电容变化的信号，那么就会引起另一方向电极走线上电容节点的变化。侦测电容值的变化可以通过与之相连的回路测量得到，再经由控制器转为数字讯号让计算机做运算处理取得位置，进而达到定位的目的。采用metalmesh的走线方式，自电容触控传感模块能够实现低电阻、高透过率、高稳定性，并且metalmesh的走线方式其膜层更薄，能使自电容触控传感模块具有弯折性，适应柔性面板的发展需求。\n\n[0044]具体地，请参阅图2，图2是本申请实施例提供的自电容触控传感模块102的一种简化电路图。第一方向电极102a包括沿第一方向排布的第一多边形走线Tx，102b第二方向电极包括沿第二方向排布的第二多边形走线Ty，第一多边形走线Tx与第二多边形走线Ty相交处形成电容节点。当受到手指触摸时，触摸位置的第一方向电极102a和第二方向电极102b与手指电容耦合后分别与地形成电容的两极，其触控位置的坐标主要是通过交替的扫描第一方向电极102a和第二方向电极102b，例如，可先扫描完成第一方向电极102a，然后再逐一扫描第二方向电极102b。\n\n[0045]需要说明的是，第一方向为沿x轴延伸的方向，第二方向为沿y轴延伸的方向。当然第一方向也可以为沿y轴延伸的方向，第二方向为沿x轴延伸的方向。在本实施例不作说明的情况下，默认第一方向为沿x轴延伸的方向，第二方向为沿y轴延伸的方向。\n\n[0046]其中，自电容触控传感模块102的扫描周期为第一方向电极102a扫描时间与第二方向电极102b扫描时间的和。对于互电容触控传感器，相同的通道数下，其对应的扫描周期为第一方向电极102a扫描时间与第二方向电极102b扫描时间的乘积。因此，本申请采用自电容触控传感模块还可以缩短扫描周期，加快扫描速度，提高触控传感效率。\n\n[0047]其中，显示面板10还包括沿第一面101a向盖板104方向依次层叠设置的栅极绝缘层105、第一钝化层106、有机平坦层107以及光学胶层108，第一方向电极102a和第二方向电极102b设置在栅极绝缘层105或第一钝化层106的相同层内。\n\n[0048]其中，请参阅图3，图3是本申请实施例提供的显示面板10的第二种膜层结构示意图。第一方向电极102a和第二方向电极102b均设置在第一钝化层106内。其中，第一方向电极102a之间或第二方向电极102b之间通过透明导电材料102c桥接。\n\n[0049]其中，请参阅图4，图4是本申请实施例提供的显示面板10的第三种膜层结构示意图。第一方向电极102a和第二方向电极102b均设置在栅极绝缘层105内。其中，第一方向电极102a之间或第二方向电极102b之间通过透明导电材料102c桥接。\n\n[0050]其中，透明导电材料102c采用的材料包括铟镓锌氧化物(IGZO)、铟锌锡氧化物(IZTO)、铟镓锌锡氧化物(IGZTO)、铟锡氧化物(ITO)、铟锌氧化物(IZO)、铟铝锌氧化物(IAZO)、铟镓锡氧化物(IGTO)或锑锡氧化物(ATO)中的任一种。以上材料具有很好的导电性和透明性，并且厚度较小，不会影响显示面板10的整体厚度。\n\n[0051]当第一方向电极102a和第二方向电极102b设置在栅极绝缘层105或第一钝化层106的相同层内时，同层设置的第一方向电极102a和第二方向电极102b为相互绝缘，为形成电容节点，在第一方向电极102a连续设置时，则在第二方向电极102b之间通过透明导电材料桥接，同样的，在第二方向电极102b连续设置时，则在第一方向电极102a之间通过透明导电材料桥接，进而实现自电容触控传感。\n\n[0052]其中，请参阅图5，图5是本申请实施例提供的显示面板10的第四种膜层结构示意图。显示面板10还包括第二钝化层109，第二钝化层109设置在光学胶层108与盖板104之间，第一方向电极102a设置在第一钝化层106内，第二方向电极102b设置在第二钝化层109内。或第一方向电极102a设置在栅极绝缘层105内，第二方向电极102b设置在第二钝化层109内。\n\n[0053]本申请提供的实施例将第一方向电极102a和第二方向电极102b置于相同或不同的膜层，第一方向电极102a和第二方向电极102b之间的寄生电容不同。将第一方向电极102a和第二方向电极102b置于不同层，能够通过调节第一方向电极102a和第二方向电极102b之间的距离d调节第一方向电极102a和第二方向电极102b之间的寄生电容。d增大及介电常数变大，都有利于寄生电容改善。不同的d大小能够适应不同尺寸的显示面板10。第一方向电极102a和第二方向电极102b同层设置只需在其中一个方向电极间进行桥接，可降低显示面板10的厚度，有利于实现面板的弯折，可适用于柔性显示面板中的传感器集成应用。\n\n[0054]请参阅图6，图6是本申请实施例提供的光控传感模块103的一种等效电路示意图。图6中以两个薄膜晶体管一个电容(2T1C)的设置方式为示例进行说明。其中，开关薄膜晶体管T2的栅极连接本行栅极扫描信号Gate1，开关薄膜晶体管T2的第一端连接下一行数据信号Data2，开关薄膜晶体管T2的第二端连接第一节点N1；光感薄膜晶体管T1的栅极连接下一行栅极扫描信号Gate2，光感薄膜晶体管T1的第一端连接第一节点N1，光感薄膜晶体管T1的第二端连接本行数据信号Data1；电容C的第一端连接第一节点N1，电容C的第二端连接下一行栅极扫描信号Gate2。\n\n[0055]请参阅图7，图7是本申请实施例提供的显示面板10的一种等效电路示意图。自电容触控传感模块102中的第一方向电极102a的第一多边形走线Tx、第二方向电极102b的第一多边形走线Ty与光控传感模块103的走线交错设置。图7中是为了体现自电容触控传感模块102和光控传感模块103的走线在面板内交错设置，但电容触控传感模块102和光控传感模块103的走线实际互不干扰，互相独立不连接，图7中仅为示意。本申请实施例实现了整面的自电容触控传感和光控传感集成，一方面可以节省面板表面的空间，另一方面可以有效的解决传感器集成时信号串扰的问题。\n\n[0056]本申请提供一种显示装置100，图8为本申请实施例中显示装置100的一种结构示意图。其中，显示装置100包括以上所述的显示面板10和显示器20，显示器20为液晶显示器、有机电致发光显示器、量子点发光显示器、Mini-发光二极管显示器或Micro-发光二极管显示器，显示装置100还可以包括其他装置。图8中以液晶显示器作为示意，液晶显示器与显示面板10通过光学胶108贴合。其中，液晶显示器可以为COA或者Non-COA的架构，其显示模式可以为垂直配向型(VA,Vertical Alignment)、面内转换型(IPS,In-plane Switching)、扭曲向列型(TN,Twisted Nematic)或面内开关型(FFS,Fringe Field Switching)。本申请实施例中显示器20和其他装置及其装配是本领域技术人员所熟知的相关技术，在此不做过多赘述。\n\n[0057]本申请实施例提供的显示装置100，包括显示面板10和显示器20。同步集成光控和触控的显示装置100，相较于单一功能的触控传感或者光控传感，可实现短程触控，远程光控的功能，有利于提升液晶显示器的复合功能。并且本申请实施例的显示面板10采用自电容触控传感器和光控传感器集成于显示屏之中，相较于互电容触控传感模块，可实现更高的扫描频率和较高的抗噪性能，可以有效的解决互电容触控传感器与光控传感器集成的信号串扰的问题。并且将自电容触控传感器和光控传感器集成于显示面板内，可有效的改善光效的损失和成本的上升。\n\n[0058]以上对本申请实施例提供显示面板及显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种显示面板及显示装置。\n\n背景技术\n\n[0002]随着显示技术的发展，将传感器集成在显示面板之中也是一种趋势，比如目前所采用的触摸和光传感器都是将传感器贴合在显示屏的外面，但这样会导致显示面板的光效下降和成本的上升。目前，将传感器集成在显示面板内，可以有效的改善光效的损失和成本的上升。\n\n[0003]随着大尺寸显示技术的发展及在各领域的广泛应用，将各种传感器集成在显示面板之中也是一个待发展的主流趋势，特别是触控传感器和光传感器。但是将光控传感器和触控传感器同步集成，互电容光控传感器的电极对触控接受电极之间存在寄生电容，会影响触控传感器的正常工作，也就是光控传感器对触控传感器的信号串扰的问题。\n\n发明内容\n\n[0004]本申请实施例提供一种显示面板及显示装置，集成自电容触控传感模块与光控传感模块，能够有效的解决互电容模式触控传感器与光控传感器集成的信号串扰的问题。\n\n[0005]本申请提供一种显示面板，包括：\n\n[0006]基板，所述基板包括相对设置的第一面和第二面；\n\n[0007]自电容触控传感模块，所述自电容触控传感模块设置在所述第一面上；其中，所述自电容触控传感模块包括多个第一方向电极和多个第二方向电极，所述第一方向电极沿第一方向延伸，所述第二方向电极沿第二方向延伸，所述第一方向与所述第二方向相交；\n\n[0008]光控传感模块，所述光控传感模块设置在所述第一面上，所述光控传感模块与所述自电容触控传感模块相邻设置；\n\n[0009]盖板，所述盖板设置在所述自电容触控传感模块与所述光控传感模块远离所述第一面的一侧。\n\n[0010]在一些实施例中，还包括沿第一面向盖板方向依次层叠设置的栅极绝缘层、第一钝化层、有机平坦层以及光学胶层，所述第一方向电极和所述第二方向电极设置在所述栅极绝缘层或所述第一钝化层的相同层内。\n\n[0011]在一些实施例中，所述第一方向电极和所述第二方向电极均设置在所述第一钝化层内。\n\n[0012]在一些实施例中，所述第一方向电极和所述第二方向电极均设置在所述栅极绝缘层内。\n\n[0013]在一些实施例中，所述第一方向电极之间或所述第二方向电极之间通过透明导电材料桥接\n\n[0014]在一些实施例中，还包括沿第一面向盖板方向依次层叠设置的栅极绝缘层、第一钝化层、有机平坦层以及光学胶层，所述第一方向电极和所述第二方向电极设置在所述栅极绝缘层或所述第一钝化层的不同层内。\n\n[0015]在一些实施例中，所述第一方向电极设置在所述栅极绝缘层内，所述第二方向电极设置在所述第一钝化层内。\n\n[0016]在一些实施例中，还包括第二钝化层，所述第二钝化层设置在光学胶层与所述盖板之间，所述第一方向电极设置在所述第一钝化层内，所述第二方向电极设置在所述第二钝化层内。\n\n[0017]在一些实施例中，所述第一方向电极包括沿第一方向排布的第一多边形走线，所述第二方向电极包括沿第二方向排布的第二多边形走线，所述第一多边形走线与所述第二多边形走线相交处形成电容节点。\n\n[0018]本申请提供一种显示装置，包括显示器和显示面板，所述显示器为液晶显示器、有机电致发光显示器、量子点发光显示器、Mini-发光二极管显示器或Micro-发光二极管显示器，所述显示面板为以上所述的显示面板。\n\n[0019]本申请实施例所提供的显示面板，包括基板、自电容触控传感模块、光控传感模块和盖板。基板包括相对设置的第一面和第二面。自电容触控传感模块设置在所述第一面上；其中，自电容触控传感模块包括多个第一方向电极和多个第二方向电极，第一方向电极沿第一方向延伸，第二方向电极沿第二方向延伸，第一方向与第二方向相交。光控传感模块设置在所述第一面上，光控传感模块与自电容触控传感模块相邻设置。盖板设置在自电容触控传感模块与光控传感模块远离第一面的一侧。本申请采用自电容触控传感模块和光控传感模块集成于显示屏之中，相较于互电容触控传感模块，可实现更高的扫描频率和较高的抗噪性能，有利于将触控和光控传感器集成在大尺寸的显示屏之中。并且可以有效的解决互电容触控传感器与光控传感器集成的信号串扰的问题。\n\n附图说明\n\n[0020]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0021]图1为本申请实施例提供的显示面板的第一种膜层结构示意图；\n\n[0022]图2为本申请实施例提供的自电容触控传感模块的一种简化电路图；\n\n[0023]图3为本申请实施例提供的显示面板的第二种膜层结构示意图；\n\n[0024]图4为本申请实施例提供的显示面板的第三种膜层结构示意图；\n\n[0025]图5为本申请实施例提供的显示面板的第四种膜层结构示意图；\n\n[0026]图6为本申请实施例提供的光控传感模块的一种等效电路示意图；\n\n[0027]图7为本申请实施例提供的显示面板的一种等效电路示意图；\n\n[0028]图8为本申请实施例提供的显示装置的一种结构示意图。\n\n具体实施方式\n\n[0029]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0030]需要说明的是，在本申请的描述中，需要理解的是，术语“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。\n\n[0031]本申请实施例提供一种显示面板及显示装置，以下对显示面板做详细介绍。\n\n[0032]请参阅图1，图1是本申请实施例中的显示面板10的第一种膜层结构示意图。其中，显示面板10包括基板101、自电容触控传感模块102、光控传感模块103和盖板104，基板101具有相对设置的第一面101a和第二面101b。自电容触控传感模块102设置在第一面101a上，其中，自电容触控传感模块102包括多个第一方向电极102a和多个第二方向电极102b，第一方向电极102a沿第一方向延伸，第二方向电极102b沿第二方向延伸，第一方向与第二方向相交。\n\n[0033]本申请实施例提供的显示面板10同步集成光控传感模块103和自电容触控传感模块102，相较于单一功能的触控传感或者光控传感，可实现短程触控，远程光控的功能。并且相较于互电容触控传感器，本申请实施例提供的显示面板10可实现更高的扫描频率和较高的抗噪性能，还能解决互电容触控传感器与光控传感器信号串扰的问题。另外，本申请实施例提供的显示面板10在面板内集成了光控和触控传感，可以有效的改善光效的损失和成本的上升。\n\n[0034]需要说明的是，第一面101a可以为基板101的上表面，第二面101b可以为基板101的下表面。当然，第一面101a也可以为基板101的下表面，第二面101b可以为基板101的上表面。本申请实施例中不做特殊说明的情况下，默认为第一面101a为基板101的上表面，第二面101b为基板101的下表面。\n\n[0035]其中，显示面板10还包括沿第一面101a向盖板104方向依次层叠设置的栅极绝缘层105、第一钝化层106、有机平坦层107以及光学胶层108，第一方向电极102a和第二方向电极102b设置在栅极绝缘层105或第一钝化层106的不同层内。\n\n[0036]其中，第一方向电极102a设置在栅极绝缘层105内，第二方向电极102b设置在第一钝化层106内。这种设置方式能够增大第一方向电极102a和第二方向电极102b之间的距离，减小寄生电容。\n\n[0037]其中，自电容触控传感模块102还包括电容C，电容C为第一方向电极102a与第二方向电极102b之间的重合区域，图1中未示出。\n\n[0038]其中，光控传感模块103还包括栅极层103a、半导体层103b、源漏极层103c、遮光层103d以及透明导电层103e。具体地，栅极层103a设置在栅极绝缘层105内，半导体层103b和源漏极层103c设置在第一钝化层106内，遮光层103d设置在光学胶层108内，第一钝化层106和有机平坦层107上设置有通孔，透明导电层103e设置在光学胶层108内并通过通孔与源漏极层103c连接。图中以光控传感模块103包括两个薄膜晶体管(TFT,Thin FilmTransistor)为示例进行说明，遮光层103d对应其中一个薄膜晶体管的正投影进行设置，该TFT作为开关TFT进行工作，另一个TFT没有受到遮光层103d的遮挡则作为光感TFT进行工作。光控传感模块103还可以根据光控传感或显示面板的具体需求设置为三个薄膜晶体管、四个薄膜晶体管或五个薄膜晶体管。透明导电层103e为外围绑定走线。外围绑定走线的具体设置是本领域技术人员所熟知的技术手段，在此不再赘述。\n\n[0039]其中，第一方向电极102a与栅极层103a同步设置，第二方向电极102b与源漏极层103c同步设置。这样能够减少制程工艺步骤，提高生产效率，节约成本。\n\n[0040]其中，半导体层103b采用的材料为氢化非晶硅(α-Si:H)。α-Si:H材料的光吸收率高、电阻温度系数较大，并且其禁带宽度可控，可大面积低温成膜，生产工艺较简单。\n\n[0041]其中，光控传感模块103还包括电容C，电容C为栅极层103a与半导体层103b之间的重合区域，图1中未示出。受到光照刺激时，光感TFT中的α-Si:H会产生载流子，而通过储存电容C收集，然后通过开光TFT进行控制，经放大器处理及集成电路(IC,IntegratedCircuit)检测到，进而进行光控传感。\n\n[0042]其中，本申请实施例采用有机平坦层107。有机平坦层107(PFA)具有低介电特性、良好的流平性和透气性，还能降低寄生电容。\n\n[0043]其中，本申请实施例提供的自电容触控传感模块102采用metalmesh的走线方式，通常是在两层导电材料涂层上蚀刻出不同的导电线路模块，即本申请实施例中的第一方向电极102a和第二方向电极102b。第一方向电极102a和第二方向电极102b蚀刻的图形相互垂直，蚀刻的图形可以是菱形。由于第一方向电极102a和第二方向电极102b架构在不同层，其相交处形成一电容节点。在工作时，第一方向电极102a可以当成驱动线，第二方向电极102b当成是侦测线。当电流经过驱动线中的一条走线时，如果外界有电容变化的信号，那么就会引起另一方向电极走线上电容节点的变化。侦测电容值的变化可以通过与之相连的回路测量得到，再经由控制器转为数字讯号让计算机做运算处理取得位置，进而达到定位的目的。采用metalmesh的走线方式，自电容触控传感模块能够实现低电阻、高透过率、高稳定性，并且metalmesh的走线方式其膜层更薄，能使自电容触控传感模块具有弯折性，适应柔性面板的发展需求。\n\n[0044]具体地，请参阅图2，图2是本申请实施例提供的自电容触控传感模块102的一种简化电路图。第一方向电极102a包括沿第一方向排布的第一多边形走线Tx，102b第二方向电极包括沿第二方向排布的第二多边形走线Ty，第一多边形走线Tx与第二多边形走线Ty相交处形成电容节点。当受到手指触摸时，触摸位置的第一方向电极102a和第二方向电极102b与手指电容耦合后分别与地形成电容的两极，其触控位置的坐标主要是通过交替的扫描第一方向电极102a和第二方向电极102b，例如，可先扫描完成第一方向电极102a，然后再逐一扫描第二方向电极102b。\n\n[0045]需要说明的是，第一方向为沿x轴延伸的方向，第二方向为沿y轴延伸的方向。当然第一方向也可以为沿y轴延伸的方向，第二方向为沿x轴延伸的方向。在本实施例不作说明的情况下，默认第一方向为沿x轴延伸的方向，第二方向为沿y轴延伸的方向。\n\n[0046]其中，自电容触控传感模块102的扫描周期为第一方向电极102a扫描时间与第二方向电极102b扫描时间的和。对于互电容触控传感器，相同的通道数下，其对应的扫描周期为第一方向电极102a扫描时间与第二方向电极102b扫描时间的乘积。因此，本申请采用自电容触控传感模块还可以缩短扫描周期，加快扫描速度，提高触控传感效率。\n\n[0047]其中，显示面板10还包括沿第一面101a向盖板104方向依次层叠设置的栅极绝缘层105、第一钝化层106、有机平坦层107以及光学胶层108，第一方向电极102a和第二方向电极102b设置在栅极绝缘层105或第一钝化层106的相同层内。\n\n[0048]其中，请参阅图3，图3是本申请实施例提供的显示面板10的第二种膜层结构示意图。第一方向电极102a和第二方向电极102b均设置在第一钝化层106内。其中，第一方向电极102a之间或第二方向电极102b之间通过透明导电材料102c桥接。\n\n[0049]其中，请参阅图4，图4是本申请实施例提供的显示面板10的第三种膜层结构示意图。第一方向电极102a和第二方向电极102b均设置在栅极绝缘层105内。其中，第一方向电极102a之间或第二方向电极102b之间通过透明导电材料102c桥接。\n\n[0050]其中，透明导电材料102c采用的材料包括铟镓锌氧化物(IGZO)、铟锌锡氧化物(IZTO)、铟镓锌锡氧化物(IGZTO)、铟锡氧化物(ITO)、铟锌氧化物(IZO)、铟铝锌氧化物(IAZO)、铟镓锡氧化物(IGTO)或锑锡氧化物(ATO)中的任一种。以上材料具有很好的导电性和透明性，并且厚度较小，不会影响显示面板10的整体厚度。\n\n[0051]当第一方向电极102a和第二方向电极102b设置在栅极绝缘层105或第一钝化层106的相同层内时，同层设置的第一方向电极102a和第二方向电极102b为相互绝缘，为形成电容节点，在第一方向电极102a连续设置时，则在第二方向电极102b之间通过透明导电材料桥接，同样的，在第二方向电极102b连续设置时，则在第一方向电极102a之间通过透明导电材料桥接，进而实现自电容触控传感。\n\n[0052]其中，请参阅图5，图5是本申请实施例提供的显示面板10的第四种膜层结构示意图。显示面板10还包括第二钝化层109，第二钝化层109设置在光学胶层108与盖板104之间，第一方向电极102a设置在第一钝化层106内，第二方向电极102b设置在第二钝化层109内。或第一方向电极102a设置在栅极绝缘层105内，第二方向电极102b设置在第二钝化层109内。\n\n[0053]本申请提供的实施例将第一方向电极102a和第二方向电极102b置于相同或不同的膜层，第一方向电极102a和第二方向电极102b之间的寄生电容不同。将第一方向电极102a和第二方向电极102b置于不同层，能够通过调节第一方向电极102a和第二方向电极102b之间的距离d调节第一方向电极102a和第二方向电极102b之间的寄生电容。d增大及介电常数变大，都有利于寄生电容改善。不同的d大小能够适应不同尺寸的显示面板10。第一方向电极102a和第二方向电极102b同层设置只需在其中一个方向电极间进行桥接，可降低显示面板10的厚度，有利于实现面板的弯折，可适用于柔性显示面板中的传感器集成应用。\n\n[0054]请参阅图6，图6是本申请实施例提供的光控传感模块103的一种等效电路示意图。图6中以两个薄膜晶体管一个电容(2T1C)的设置方式为示例进行说明。其中，开关薄膜晶体管T2的栅极连接本行栅极扫描信号Gate1，开关薄膜晶体管T2的第一端连接下一行数据信号Data2，开关薄膜晶体管T2的第二端连接第一节点N1；光感薄膜晶体管T1的栅极连接下一行栅极扫描信号Gate2，光感薄膜晶体管T1的第一端连接第一节点N1，光感薄膜晶体管T1的第二端连接本行数据信号Data1；电容C的第一端连接第一节点N1，电容C的第二端连接下一行栅极扫描信号Gate2。\n\n[0055]请参阅图7，图7是本申请实施例提供的显示面板10的一种等效电路示意图。自电容触控传感模块102中的第一方向电极102a的第一多边形走线Tx、第二方向电极102b的第一多边形走线Ty与光控传感模块103的走线交错设置。图7中是为了体现自电容触控传感模块102和光控传感模块103的走线在面板内交错设置，但电容触控传感模块102和光控传感模块103的走线实际互不干扰，互相独立不连接，图7中仅为示意。本申请实施例实现了整面的自电容触控传感和光控传感集成，一方面可以节省面板表面的空间，另一方面可以有效的解决传感器集成时信号串扰的问题。\n\n[0056]本申请提供一种显示装置100，图8为本申请实施例中显示装置100的一种结构示意图。其中，显示装置100包括以上所述的显示面板10和显示器20，显示器20为液晶显示器、有机电致发光显示器、量子点发光显示器、Mini-发光二极管显示器或Micro-发光二极管显示器，显示装置100还可以包括其他装置。图8中以液晶显示器作为示意，液晶显示器与显示面板10通过光学胶108贴合。其中，液晶显示器可以为COA或者Non-COA的架构，其显示模式可以为垂直配向型(VA,Vertical Alignment)、面内转换型(IPS,In-plane Switching)、扭曲向列型(TN,Twisted Nematic)或面内开关型(FFS,Fringe Field Switching)。本申请实施例中显示器20和其他装置及其装配是本领域技术人员所熟知的相关技术，在此不做过多赘述。\n\n[0057]本申请实施例提供的显示装置100，包括显示面板10和显示器20。同步集成光控和触控的显示装置100，相较于单一功能的触控传感或者光控传感，可实现短程触控，远程光控的功能，有利于提升液晶显示器的复合功能。并且本申请实施例的显示面板10采用自电容触控传感器和光控传感器集成于显示屏之中，相较于互电容触控传感模块，可实现更高的扫描频率和较高的抗噪性能，可以有效的解决互电容触控传感器与光控传感器集成的信号串扰的问题。并且将自电容触控传感器和光控传感器集成于显示面板内，可有效的改善光效的损失和成本的上升。\n\n[0058]以上对本申请实施例提供显示面板及显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10866, 23920, '技术领域\n\n[0001]本公开涉及显示技术领域，尤其涉及液晶显示技术领域，具体涉及一种显示装置及其控制方法。\n\n背景技术\n\n[0002]Micro-LED(微型发光二极管)显示装置发展成未来显示技术的热点之一，和目前的LCD(Liquid Crystal Display，液晶显示器)、OLED(OrganicLight-Emitting Diode，有机电激光显示)显示装置相比，具有反应快、高色域、高PPI(Pixels Per Inch，像素密度)、低能耗等优势；但其技术难点多且技术复杂，特别是其关键技术巨量转移技术、LED颗粒微型化成为技术瓶颈，而Mini-LED作为Micro-LED与背板结合的产物，具有高对比度、高显色性能等，可与OLED相媲美的特点，成本稍高LCD，仅为OLED的六成左右，相对Micro-LED、OLED更易实施，所以Mini-LED成为各大面板厂商布局热点。\n\n[0003]传统技术方案在实现高速动态画面时，容易发生拖尾行为，这个不仅与液晶的响应时间有关系，同时与人本身的视觉残像有关系。因此，当前普遍通过倍频实现不同区块显示来改善动态画面的残影，但是这样需要极大地压缩背光的扫描时间，给显示系统带来不稳定性风险。\n\n发明内容\n\n[0004]本公开提供一种显示装置及其控制方法，解决了动态画面显示存在残影且具有较高不稳定性风险的的问题。\n\n[0005]第一方面，本公开提供一种显示装置，其包括显示面板、背光单元以及时序控制器；显示面板用于画面显示；背光单元与显示面板对应设置，响应于背光数据配置不同背光分区的发光亮度；以及时序控制器与显示面板和背光单元连接，用于获取并根据画面中多个采样点的抖动值输出对应的背光数据；其中，背光分区包括具有对应发光亮度的第一背光子区和无发光亮度的第二背光子区；且第二背光子区与抖动值大于或者等于抖动阈值的画面对应。\n\n[0006]基于第一方面，在第一方面的第一种实施方式中，时序控制器经过延迟时间后输出具有对应发光亮度的背光数据至第二背光子区。\n\n[0007]基于第一方面的第一种实施方式，在第一方面的第二种实施方式中，延迟时间为大于或者等于30微秒，且小于或者等于3毫秒。\n\n[0008]基于第一方面，在第一方面的第三种实施方式中，背光数据为N位比特数的亮度控制数据；其中，N为正整数。\n\n[0009]基于第一方面的第三种实施方式，在第一方面的第四种实施方式中，背光分区的个数为2M；其中，M小于N，且M为正整数。\n\n[0010]基于第一方面的第四种实施方式，在第一方面的第五种实施方式中，在单位时间内，至少一个背光分区的亮度刷新次数为2N-M。\n\n[0011]基于第一方面的第五种实施方式，在第一方面的第六种实施方式中，N大于或者等于M的三倍。\n\n[0012]基于第一方面，在第一方面的第七种实施方式中，背光单元包括多行发光器件；每一背光分区包括至少一行的发光器件。\n\n[0013]基于第一方面，在第一方面的第八种实施方式中，背光单元包括阵列分布的迷你发光二极管和用于驱动迷你发光二极管的背光驱动电路。\n\n[0014]第二方面，本公开提供一种显示装置的控制方法，其包括：显示面板进行画面显示；抖动测试单元获取画面中多个采样点的抖动值；时序控制器根据抖动值与抖动阈值的比较结果，输出对应的背光数据至背光单元中不同的背光分区；背光分区被配置为具有对应发光亮度的第一背光子区和无发光亮度的第二背光子区，且第二背光子区与抖动值大于或者等于抖动阈值的画面对应；以及时序控制器经过延迟时间后输出具有对应发光亮度的背光数据至第二背光子区。\n\n[0015]本公开提供的显示装置及其控制方法，通过抖动值的比较结果，确定动态画面的残影发生区域，配置无发光亮度的背光数据至与残影发生区域相对应的第二背光子区，可以改善动态画面的拖尾现象，同时由于未采用倍频技术，不会增加显示的不稳定性风险。\n\n附图说明\n\n[0016]下面结合附图，通过对本公开的具体实施方式详细描述，将使本公开的技术方案及其它有益效果显而易见。\n\n[0017]图1为本公开实施例提供的显示装置的结构示意图。\n\n[0018]图2为图1中显示面板与背光单元对应的结构示意图。\n\n[0019]图3为本公开实施例提供的显示装置的工作时序示意图。\n\n[0020]图4为本公开实施例提供的控制方法的流程示意图。\n\n具体实施方式\n\n[0021]下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本公开保护的范围。\n\n[0022]如图1至图3所示，本实施例提供了一种显示装置，其包括显示面板100、背光单元200以及时序控制器300；显示面板100用于画面显示；背光单元200与显示面板100对应设置，响应于背光数据配置不同背光分区的发光亮度；以及时序控制器300与显示面板100和背光单元200连接，用于获取并根据画面中多个采样点的抖动值输出对应的背光数据；其中，背光分区包括具有对应发光亮度的第一背光子区和无发光亮度的第二背光子区；且第二背光子区与抖动值大于或者等于抖动阈值的画面对应。\n\n[0023]需要进行说明的是，背光单元200至少包括阵列分布的迷你发光二极管和用于驱动迷你发光二极管的背光驱动电路；每一背光分区包括至少一行的迷你发光二极管；其中，背光驱动电路为至少可以独立控制每一行迷你发光二极管的亮灭以及亮度，可以理解的是，此处的每一行迷你发光二极管对应于显示面板100上至少一行的像素。需要进行说明的是，抖动阈值是根据抖动测试单元或者抖动测试设备结合人眼的主动观察确定出来的经验数据值，其可以结合或者根据行业的其它经验数值进行估算或者预计，此处不再赘述。其中，时序控制器300中可以通过内置抖动测试单元来对时序控制器300发送至显示面板100的视频数据进行抖动测试，来实现显示画面中多个采样点的抖动值计算，例如，画面发生抖动时的最显著特征就是帧与帧之间会发生整体的位移，检测出位移之后再通过进一步的逻辑判定画面是否产生抖动，因此，基本上动态画面的抖动都是围绕着如何检测出这个位移进行的。\n\n[0024]常用的位移估计方法有光流法、块匹配法、特征点匹配法及灰度投影法。光流法实际操作中采用了角点检测和稀疏光流。实际使用中因为光流依赖于特征点的检测好坏，如果当前环境没有办法找到比较多的角点，那估算出的位移就会非常不准确，如果想要获得比较好的效果则计算量会较大。并且光流对于实际环境中移动的物体非常容易产生错误的估计，鲁棒性较差。\n\n[0025]特征点匹配法同光流法，比较依赖于特征点的寻找。而想要找到比较准确的特征点通常会有非常大的计算量，实际运行速度其实比较慢。\n\n[0026]灰度投影法是使用比较多，计算量也相对较小，实际效果也较好的方法，灰度投影法其实是一种对图像分布特征进行简化提取的一种操作，以二维图像的像素行和列为单位，将图像特征转化为沿行、列坐标的曲线，从而更容易对图像分布特征进行计算。\n\n[0027]可以理解的是，本实施例中的抖动值可以一定程度上反映出来动态画面拖尾发生的大概区域，进而通过对应采样点的抖动值与抖动阈值的比较结果，确定动态画面的残影发生区域，并配置无发光亮度的背光数据至与残影发生区域相对应的第二背光子区，可以改善动态画面的拖尾现象，同时由于未采用倍频技术，不会增加显示的不稳定性风险。\n\n[0028]在其中一个实施例中，可以采用抖动测试设备对显示画面进行实时监控，并将显示画面中采样点的抖动值传输至时序控制器300，时序控制器300将对应采样点的抖动值与抖动阈值进行比较，并根据两者的比较结果输出对应的背光数据，来控制各背光分区的亮灭以及亮度，其中，可以把背光分区划分为具有对应发光亮度的第一背光子区和无发光亮度的第二背光子区；且第二背光子区是与抖动值大于或者等于抖动阈值的画面对应，而第一背光子区是与抖动值小于抖动阈值的画面对应的。时序控制器300经过延迟时间后输出具有对应发光亮度的背光数据至第二背光子区。\n\n[0029]可以理解的是，第二背光子区保持不发光的时间是一定的，并非一直保持不发光的状态，只是在画面拖尾比较严重的区域保持一个延迟时间的不发光时间段，这样的话，可以改善动态画面的拖尾现象，同时不需要对显示装置进行倍频，能够有效降低显示装置发生不稳定性的风险。\n\n[0030]在其中一个实施例中，延迟时间可以但不限于为大于或者等于30微秒，且小于或者等于3毫秒；其也可以为10微秒或者20微秒或者1毫秒。本实施例中选择的延迟时间数值既可以改善拖尾现象，同时拖尾区域的黑画面不会保持太久，可以实现相对较好的画质显示。\n\n[0031]在其中一个实施例中，背光数据为N位比特数的亮度控制数据；其中，N为正整数；可以理解的是，N越大说明背光亮度可以实现更多的灰阶显示。\n\n[0032]在其中一个实施例中，背光分区的个数为2M；其中，M小于N，且M为正整数。可以理解的是，背光分区的个数越多越可以实现背光分区的精确化控制，越有利于改善动态画面的拖尾现象。\n\n[0033]在其中一个实施例中，在单位时间内，至少一个背光分区的亮度刷新次数为2N-M。可以理解的是，每一个亮度刷新次数对应一个不同的背光亮度，并且随着亮度刷新次数的增加，对应的背光亮度也在逐渐提升。\n\n[0034]如图2所示，在其中一个实施例中，N大于或者等于M的三倍。例如，M可以但不限于为4，N可以但不限于为12。这时候背光分区的个数16个，对应地，可以分别标记为背光分区P1-P16；此时，子场需要对应刷新2N次即4096次，每一个背光分区需要刷新256次；刷新4096次对应的亮度为4000nit，则刷新256次对应的亮度为250nit。\n\n[0035]如图2至图3所示，在其中一个工作方式中，随着时间t的推移，显示面板100的显示过程中，背光分区P1执行1025～1280次的刷新，背光分区P8执行3851～4096次的刷新，背光分区P9执行1～256次的刷新，背光分区P10执行257～512次的刷新，背光分区P16执行769～1024次的刷新；背光分区P2不执行刷新，则说明背光分区P2属于第二背光子区，暂时不需要亮度，对应地，背光分区P3～P7、P12～P15也可能但不限于属于第二背光子区的情况。\n\n[0036]如图4所示，在其中一个实施例中，本公开提供一种显示装置的控制方法，其包括以下步骤：步骤S100，显示面板100进行画面显示；步骤S200，抖动测试单元获取画面中多个采样点的抖动值；步骤S300，时序控制器300根据抖动值与抖动阈值的比较结果，输出对应的背光数据至背光单元200中不同的背光分区；步骤S400，背光分区被配置为具有对应发光亮度的第一背光子区和无发光亮度的第二背光子区，且第二背光子区与抖动值大于或者等于抖动阈值的画面对应；以及步骤S500，时序控制器300经过延迟时间后输出具有对应发光亮度的背光数据至第二背光子区。\n\n[0037]可以理解的是，本实施例中给出步骤顺序仅为示例性的一种，并不局限于该种顺序。本公开提供的显示装置的控制方法，也可以通过抖动值的比较结果，确定动态画面的残影发生区域，配置无发光亮度的背光数据至与残影发生区域相对应的第二背光子区，可以改善动态画面的拖尾现象，同时由于未采用倍频技术，不会增加显示的不稳定性风险。\n\n[0038]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0039]以上对本公开实施例所提供的显示装置及其控制方法进行了详细介绍，本文中应用了具体个例对本公开的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本公开的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本公开各实施例的技术方案的范围。', '技术领域\n\n[0001]本公开涉及显示技术领域，尤其涉及液晶显示技术领域，具体涉及一种显示装置及其控制方法。\n\n背景技术\n\n[0002]Micro-LED(微型发光二极管)显示装置发展成未来显示技术的热点之一，和目前的LCD(Liquid Crystal Display，液晶显示器)、OLED(OrganicLight-Emitting Diode，有机电激光显示)显示装置相比，具有反应快、高色域、高PPI(Pixels Per Inch，像素密度)、低能耗等优势；但其技术难点多且技术复杂，特别是其关键技术巨量转移技术、LED颗粒微型化成为技术瓶颈，而Mini-LED作为Micro-LED与背板结合的产物，具有高对比度、高显色性能等，可与OLED相媲美的特点，成本稍高LCD，仅为OLED的六成左右，相对Micro-LED、OLED更易实施，所以Mini-LED成为各大面板厂商布局热点。\n\n[0003]传统技术方案在实现高速动态画面时，容易发生拖尾行为，这个不仅与液晶的响应时间有关系，同时与人本身的视觉残像有关系。因此，当前普遍通过倍频实现不同区块显示来改善动态画面的残影，但是这样需要极大地压缩背光的扫描时间，给显示系统带来不稳定性风险。\n\n发明内容\n\n[0004]本公开提供一种显示装置及其控制方法，解决了动态画面显示存在残影且具有较高不稳定性风险的的问题。\n\n[0005]第一方面，本公开提供一种显示装置，其包括显示面板、背光单元以及时序控制器；显示面板用于画面显示；背光单元与显示面板对应设置，响应于背光数据配置不同背光分区的发光亮度；以及时序控制器与显示面板和背光单元连接，用于获取并根据画面中多个采样点的抖动值输出对应的背光数据；其中，背光分区包括具有对应发光亮度的第一背光子区和无发光亮度的第二背光子区；且第二背光子区与抖动值大于或者等于抖动阈值的画面对应。\n\n[0006]基于第一方面，在第一方面的第一种实施方式中，时序控制器经过延迟时间后输出具有对应发光亮度的背光数据至第二背光子区。\n\n[0007]基于第一方面的第一种实施方式，在第一方面的第二种实施方式中，延迟时间为大于或者等于30微秒，且小于或者等于3毫秒。\n\n[0008]基于第一方面，在第一方面的第三种实施方式中，背光数据为N位比特数的亮度控制数据；其中，N为正整数。\n\n[0009]基于第一方面的第三种实施方式，在第一方面的第四种实施方式中，背光分区的个数为2M；其中，M小于N，且M为正整数。\n\n[0010]基于第一方面的第四种实施方式，在第一方面的第五种实施方式中，在单位时间内，至少一个背光分区的亮度刷新次数为2N-M。\n\n[0011]基于第一方面的第五种实施方式，在第一方面的第六种实施方式中，N大于或者等于M的三倍。\n\n[0012]基于第一方面，在第一方面的第七种实施方式中，背光单元包括多行发光器件；每一背光分区包括至少一行的发光器件。\n\n[0013]基于第一方面，在第一方面的第八种实施方式中，背光单元包括阵列分布的迷你发光二极管和用于驱动迷你发光二极管的背光驱动电路。\n\n[0014]第二方面，本公开提供一种显示装置的控制方法，其包括：显示面板进行画面显示；抖动测试单元获取画面中多个采样点的抖动值；时序控制器根据抖动值与抖动阈值的比较结果，输出对应的背光数据至背光单元中不同的背光分区；背光分区被配置为具有对应发光亮度的第一背光子区和无发光亮度的第二背光子区，且第二背光子区与抖动值大于或者等于抖动阈值的画面对应；以及时序控制器经过延迟时间后输出具有对应发光亮度的背光数据至第二背光子区。\n\n[0015]本公开提供的显示装置及其控制方法，通过抖动值的比较结果，确定动态画面的残影发生区域，配置无发光亮度的背光数据至与残影发生区域相对应的第二背光子区，可以改善动态画面的拖尾现象，同时由于未采用倍频技术，不会增加显示的不稳定性风险。\n\n附图说明\n\n[0016]下面结合附图，通过对本公开的具体实施方式详细描述，将使本公开的技术方案及其它有益效果显而易见。\n\n[0017]图1为本公开实施例提供的显示装置的结构示意图。\n\n[0018]图2为图1中显示面板与背光单元对应的结构示意图。\n\n[0019]图3为本公开实施例提供的显示装置的工作时序示意图。\n\n[0020]图4为本公开实施例提供的控制方法的流程示意图。\n\n具体实施方式\n\n[0021]下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本公开保护的范围。\n\n[0022]如图1至图3所示，本实施例提供了一种显示装置，其包括显示面板100、背光单元200以及时序控制器300；显示面板100用于画面显示；背光单元200与显示面板100对应设置，响应于背光数据配置不同背光分区的发光亮度；以及时序控制器300与显示面板100和背光单元200连接，用于获取并根据画面中多个采样点的抖动值输出对应的背光数据；其中，背光分区包括具有对应发光亮度的第一背光子区和无发光亮度的第二背光子区；且第二背光子区与抖动值大于或者等于抖动阈值的画面对应。\n\n[0023]需要进行说明的是，背光单元200至少包括阵列分布的迷你发光二极管和用于驱动迷你发光二极管的背光驱动电路；每一背光分区包括至少一行的迷你发光二极管；其中，背光驱动电路为至少可以独立控制每一行迷你发光二极管的亮灭以及亮度，可以理解的是，此处的每一行迷你发光二极管对应于显示面板100上至少一行的像素。需要进行说明的是，抖动阈值是根据抖动测试单元或者抖动测试设备结合人眼的主动观察确定出来的经验数据值，其可以结合或者根据行业的其它经验数值进行估算或者预计，此处不再赘述。其中，时序控制器300中可以通过内置抖动测试单元来对时序控制器300发送至显示面板100的视频数据进行抖动测试，来实现显示画面中多个采样点的抖动值计算，例如，画面发生抖动时的最显著特征就是帧与帧之间会发生整体的位移，检测出位移之后再通过进一步的逻辑判定画面是否产生抖动，因此，基本上动态画面的抖动都是围绕着如何检测出这个位移进行的。\n\n[0024]常用的位移估计方法有光流法、块匹配法、特征点匹配法及灰度投影法。光流法实际操作中采用了角点检测和稀疏光流。实际使用中因为光流依赖于特征点的检测好坏，如果当前环境没有办法找到比较多的角点，那估算出的位移就会非常不准确，如果想要获得比较好的效果则计算量会较大。并且光流对于实际环境中移动的物体非常容易产生错误的估计，鲁棒性较差。\n\n[0025]特征点匹配法同光流法，比较依赖于特征点的寻找。而想要找到比较准确的特征点通常会有非常大的计算量，实际运行速度其实比较慢。\n\n[0026]灰度投影法是使用比较多，计算量也相对较小，实际效果也较好的方法，灰度投影法其实是一种对图像分布特征进行简化提取的一种操作，以二维图像的像素行和列为单位，将图像特征转化为沿行、列坐标的曲线，从而更容易对图像分布特征进行计算。\n\n[0027]可以理解的是，本实施例中的抖动值可以一定程度上反映出来动态画面拖尾发生的大概区域，进而通过对应采样点的抖动值与抖动阈值的比较结果，确定动态画面的残影发生区域，并配置无发光亮度的背光数据至与残影发生区域相对应的第二背光子区，可以改善动态画面的拖尾现象，同时由于未采用倍频技术，不会增加显示的不稳定性风险。\n\n[0028]在其中一个实施例中，可以采用抖动测试设备对显示画面进行实时监控，并将显示画面中采样点的抖动值传输至时序控制器300，时序控制器300将对应采样点的抖动值与抖动阈值进行比较，并根据两者的比较结果输出对应的背光数据，来控制各背光分区的亮灭以及亮度，其中，可以把背光分区划分为具有对应发光亮度的第一背光子区和无发光亮度的第二背光子区；且第二背光子区是与抖动值大于或者等于抖动阈值的画面对应，而第一背光子区是与抖动值小于抖动阈值的画面对应的。时序控制器300经过延迟时间后输出具有对应发光亮度的背光数据至第二背光子区。\n\n[0029]可以理解的是，第二背光子区保持不发光的时间是一定的，并非一直保持不发光的状态，只是在画面拖尾比较严重的区域保持一个延迟时间的不发光时间段，这样的话，可以改善动态画面的拖尾现象，同时不需要对显示装置进行倍频，能够有效降低显示装置发生不稳定性的风险。\n\n[0030]在其中一个实施例中，延迟时间可以但不限于为大于或者等于30微秒，且小于或者等于3毫秒；其也可以为10微秒或者20微秒或者1毫秒。本实施例中选择的延迟时间数值既可以改善拖尾现象，同时拖尾区域的黑画面不会保持太久，可以实现相对较好的画质显示。\n\n[0031]在其中一个实施例中，背光数据为N位比特数的亮度控制数据；其中，N为正整数；可以理解的是，N越大说明背光亮度可以实现更多的灰阶显示。\n\n[0032]在其中一个实施例中，背光分区的个数为2M；其中，M小于N，且M为正整数。可以理解的是，背光分区的个数越多越可以实现背光分区的精确化控制，越有利于改善动态画面的拖尾现象。\n\n[0033]在其中一个实施例中，在单位时间内，至少一个背光分区的亮度刷新次数为2N-M。可以理解的是，每一个亮度刷新次数对应一个不同的背光亮度，并且随着亮度刷新次数的增加，对应的背光亮度也在逐渐提升。\n\n[0034]如图2所示，在其中一个实施例中，N大于或者等于M的三倍。例如，M可以但不限于为4，N可以但不限于为12。这时候背光分区的个数16个，对应地，可以分别标记为背光分区P1-P16；此时，子场需要对应刷新2N次即4096次，每一个背光分区需要刷新256次；刷新4096次对应的亮度为4000nit，则刷新256次对应的亮度为250nit。\n\n[0035]如图2至图3所示，在其中一个工作方式中，随着时间t的推移，显示面板100的显示过程中，背光分区P1执行1025～1280次的刷新，背光分区P8执行3851～4096次的刷新，背光分区P9执行1～256次的刷新，背光分区P10执行257～512次的刷新，背光分区P16执行769～1024次的刷新；背光分区P2不执行刷新，则说明背光分区P2属于第二背光子区，暂时不需要亮度，对应地，背光分区P3～P7、P12～P15也可能但不限于属于第二背光子区的情况。\n\n[0036]如图4所示，在其中一个实施例中，本公开提供一种显示装置的控制方法，其包括以下步骤：步骤S100，显示面板100进行画面显示；步骤S200，抖动测试单元获取画面中多个采样点的抖动值；步骤S300，时序控制器300根据抖动值与抖动阈值的比较结果，输出对应的背光数据至背光单元200中不同的背光分区；步骤S400，背光分区被配置为具有对应发光亮度的第一背光子区和无发光亮度的第二背光子区，且第二背光子区与抖动值大于或者等于抖动阈值的画面对应；以及步骤S500，时序控制器300经过延迟时间后输出具有对应发光亮度的背光数据至第二背光子区。\n\n[0037]可以理解的是，本实施例中给出步骤顺序仅为示例性的一种，并不局限于该种顺序。本公开提供的显示装置的控制方法，也可以通过抖动值的比较结果，确定动态画面的残影发生区域，配置无发光亮度的背光数据至与残影发生区域相对应的第二背光子区，可以改善动态画面的拖尾现象，同时由于未采用倍频技术，不会增加显示的不稳定性风险。\n\n[0038]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0039]以上对本公开实施例所提供的显示装置及其控制方法进行了详细介绍，本文中应用了具体个例对本公开的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本公开的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本公开各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10867, 23921, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种微型发光二极管灯板、背光模组及其制备方法。\n\n背景技术\n\n[0002]液晶显示器是显示面板市场上的主流产品。背光模组是液晶显示器的关键部件之一，用于提供充足且分布均匀的光源，使得液晶显示器可以显示图面。传统的背光模组通常包括背光源、导光板、光学膜片、胶框等部件，依光源分布位置不同，传统的背光模组分为侧光式背光模组和直下式背光模组两大类型。\n\n[0003]传统的背光模组开启时，由于其上所有的背光源都会开启，所以液晶显示面板上无需显示的区域亦会受到背光照射，使得亮态和暗态之间对比度低。微型发光二极管(Mini-Light Emitting Diode,Mini-LED)背光模组具有显示性能佳、低功率、高亮度等特点，且Mini-LED背光模组开启时，并非所有的Mini-LED全部开启，而是开启与显示画面相匹配的Mini-LED，使得无需显示的区域呈现完全的暗态，从而实现高对比度。\n\n[0004]现有Mini-LED背光模组包括Mini-LED灯板，如图1所示，所述Mini-LED灯板一般包括：一玻璃基板100；多个Mini-LED200(Mini-Light Emitting Diode,Mini-LED)，间隔设置所述玻璃基板100上；以及一白油反射层300，层叠设置于所述玻璃基板100上，所述白油反射层300在各个所述Mini-LED200的位置处设有一白油开孔，使得各个所述Mini-LED200在所述白油反射层300上露出。所述白油反射层300用于增强所述玻璃基板100对光线的反射效果，提高光线的利用率，避免所述玻璃基板100上未设有Mini-LED200的区域反射率低、光线损失率大的缺点。但是，由于开孔工艺的原因，无法确保所述白油开孔与所述Mini-LED200充分适配，即：所述白油开孔的孔缘与Mini-LED200的边缘之间具有空隙400，光线会从所述空隙400漏出，从而降低光线的利用率。\n\n发明内容\n\n[0005]本申请实施例提供了一种微型发光二极管灯板、背光模组及其制备方法，以改善现有Mini-LED背光模组存在的光线损失率大、光线利用率低的问题。\n\n[0006]第一方面，本申请提供了一种微型发光二极管灯板，包括：\n\n[0007]一基板；\n\n[0008]一第一反射层，层叠设置于所述基板的一面上；\n\n[0009]一电路层，层叠设置于所述第一反射层背离所述基板的一面上，且所述电路层上设有多个电性连接位；以及\n\n[0010]多个微型发光二极管，分别电性连接于各个所述电性连接位上，并且所述多个微型发光二极管间隔设置。\n\n[0011]进一步地，所述第一反射层为分布式布拉格反射镜结构。\n\n[0012]优选地，所述第一反射层由依次层叠设置的一第一氮化硅层、一氧化硅层和一第二氮化硅层组成。\n\n[0013]优选地，所述第一反射层由依次层叠设置的一第一氮化硅层、一非晶矽层和一第二氮化硅层组成。\n\n[0014]第二方面，本申请提供了一种背光模组，包括：\n\n[0015]至少一如第一方面中所述的微型发光二极管灯板；以及\n\n[0016]一第二反射层，层叠设置于所述微型发光二极管灯板的一面上，且所述第二反射层上设有多个间隔设置的开口，以将各个所述微型发光二极管露出。\n\n[0017]优选地，所述第二反射层的材质为具有反射作用的白色油墨。\n\n[0018]进一步地，所述背光模组还包括：一保护层，覆盖于各个所述微型发光二极管和所述第二反射层上。\n\n[0019]进一步地，所述背光模组还包括：一光学膜片组，层叠设置于所述第二反射层背离所述微型发光二极管灯板的一面上。\n\n[0020]第三方面，本申请提供了一种背光模组的制备方法，包括如下步骤：\n\n[0021]制备一微型发光二极管灯板，所述微型发光二极管灯板包括：一基板；一第一反射层，层叠设置于所述基板的一面上；一电路层，层叠设置于所述第一反射层背离所述基板的一面上，且所述电路层上设有多个电性连接位；以及多个微型发光二极管，分别电性连接于各个所述电性连接位上，并且所述多个微型发光二极管间隔设置；以及\n\n[0022]在所述微型发光二极管灯板的一面上印刷形成一第二反射层，所述第二反射层在各个微型发光二极管的位置处分别设有一开口，使得各个微型发光二极管露出。\n\n[0023]进一步地，所述制备一微型发光二极管灯板，包括如下步骤：\n\n[0024]提供一基板，在所述基板的一面上沉积形成整面的一第一反射层；\n\n[0025]在所述第一反射层背离所述基板的一面上制备形成一电路层，所述电路层上设有多个电性连接位；以及\n\n[0026]将多个微型发光二极管分别电性连接于各个所述电性连接位上。\n\n[0027]本申请提供了一种微型发光二极管灯板、背光模组及其制备方法，产生如下的技术效果：\n\n[0028]本申请提供了一种微型发光二极管灯板，相较于现有的微型发光二极管灯板，增设了一第一反射层，所述第一反射层设置于基板与多个微型发光二极管之间，以解决现有微型发光二极管灯板存在的问题:白油开孔的孔缘与对应的微型发光二极管的边缘之间具有空隙，光线会从所述空隙漏出，从而降低光线的利用率。在本申请的微型发光二极管灯板中，所述空隙内设有所述第一反射层以增强光线的反射效果，有效避免光线从所述空隙漏出，从而提高了光线的利用率，极大地降低了光线的损失率。所述微型发光二极管灯板所述微型发光二极管灯板可以作为背光模组的背光源，具有节约能耗的优点。\n\n附图说明\n\n[0029]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0030]图1为现有技术中Mini-LED灯板的结构示意图。\n\n[0031]图2为本申请提供的Mini-LED灯板的一个实施例的结构示意图。\n\n[0032]图3为本申请提供的Mini-LED灯板的制备方法的一个实施例的流程示意图。\n\n[0033]图4为图3中步骤S2的一个实施例的流程示意图。\n\n[0034]图5为图4中步骤S2的另一个实施例的流程示意图。\n\n[0035]图6为本申请提供的背光模组的一个实施例的横向截面示意图。\n\n[0036]图7为本申请提供的背光模组的一个实施例的纵向截面示意图。\n\n[0037]图8为本申请提供的背光模组的另一个实施例的结构示意图。\n\n[0038]图9为本申请提供的背光模组的制备方法的一个实施例的流程示意图。\n\n具体实施方式\n\n[0039]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0040]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0041]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0042]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0043]第一方面，如图2所示，本申请提供了一种微型发光二极管(Mini-Light EmittingDiode,Mini-LED)灯板，主要包括：一基板1、一第一反射层2、一电路层3以及多个Mini-LED4。所述第一反射层2层叠设置于所述基板1的一面上，所述电路层3层叠设置于所述第一反射层2背离所述基板1的一面上，所述多个Mini-LED4间隔设置于所述电路层3上。\n\n[0044]所述基板1用于承载多个Mini-LED4，所述基板1的材质可以是玻璃。此外，所述基板1对Mini-LED4发出的光线具有反射的作用，以降低光线的损失率。\n\n[0045]所述第一反射层2为分布式布拉格反射镜结构，即：由两种不同折射率的材料层交替设置而形成的复合层结构。所述第一反射层2可以提高光线的利用率，增强光线的反射效果。\n\n[0046]作为一优选的实施方案，所述第一反射层2由依次层叠设置的一第一氮化硅(SiNx)层、一氧化硅(SiOx)层和一第二氮化硅层组成。\n\n[0047]作为另一优选的实施方案，所述第一反射层2由依次层叠设置的一第一氮化硅(SiNx)层、一非晶矽(a-Si)层和一第二氮化硅(SiNx)层组成。\n\n[0048]需要说明的是，所述第一反射层2的整体厚度，以及组成所述第一反射层2的各个材料层的厚度不作具体限定，可依据实际需要自行选择。\n\n[0049]所述电路层3上设有多个电性连接位，每个所述电性连接位包括一正极连接位点和一负极连接位点。所述电路层3可以包括图案化的金属层，所述金属层的材质可以是钼(Mo)、铝(Al)、铜(Cu)或钛(Ti)等单种金属，也可以是合金，并且所述金属层可以是单层结构，也可以是多层结构，所述多层结构中至少两层的材质不相同。\n\n[0050]作为一优选的实施方案，所述电路层3可以是印刷电路板(Printed CircuitBoard,PCB)、BT(Bismaleimide Triazine)板、铝基板、柔性电路(Flexible PrintedCircuit,FPC)板等电路板结构。\n\n[0051]所述多个Mini-LED4分别电性连接于各个所述电性连接位上，即：各个Mini-LED4分别电性连接于一正极连接位点和一负极连接位点上。外部的电源通过所述电性连接位与各个Mini-LED4电性连接，从而为各个Mini-LED4提供发光的电力。所述多个Mini-LED4的数量不作具体限定，可依据实际需要自行选择。\n\n[0052]本领域技术人员可以理解，所述Mini-LED灯板还应包括一些其他所必需的结构件，以确保所述Mini-LED灯板正常工作，例如：胶层等。\n\n[0053]第二方面，本申请提供了一种Mini-LED灯板的制备方法，用于制备第一方面中所述的Mini-LED灯板，如图3所示，包括如下步骤：\n\n[0054]S1、提供一基板，在所述基板的一面上沉积形成一整面的一第一反射层。\n\n[0055]在一个实施例中，采用物理气相沉积(Physical Vapor Deposition,PVD)工艺在所述基板的一面上沉积形成一整面的一第一反射层。\n\n[0056]S2、在所述第一反射层背离所述基板的一面上制备形成一电路层，所述电路层上设有多个电性连接位。\n\n[0057]具体的，制备电路层为本领域常规技术手段，可以直接在所述第一反射层上利用光刻与刻蚀工艺制备形成所述电路层，也可以采用喷墨印刷(Ink-Jet printing,IJP)工艺制备形成所述电路层；或者，先单独制备一电路板结构，然后将所述电路板结构通过胶合剂粘附于所述第一反射层背离所述基板的一面上。\n\n[0058]在一个实施例中，如图4所示，所述步骤S2包括如下步骤：\n\n[0059]S2.1-a、在第一反射层背离基板的一面上沉积形成整面的一金属层。\n\n[0060]具体的，采用物理气相沉积(Physical Vapor Deposition,PVD)工艺在所述第一反射层上沉积形成整面的一金属层，所述金属层的材质优选为铜(Cu)。\n\n[0061]S2.2-a、在所述金属层背离所述第一反射层的一面上制备形成整面的一第一光刻胶层。\n\n[0062]具体的，先将光刻胶材料涂布于所述金属层背离所述第一反射层的一面上，然后烘干，形成所述第一光刻胶层。\n\n[0063]S2.3-a、对所述第一光刻胶层进行图案化处理，获得图案化的第一光刻胶层。\n\n[0064]具体的，所述图案化处理为本领域常规技术手段，包括曝光、显影、烘干等工序。\n\n[0065]S2.4-a、对所述金属层进行图案化处理，即去除所述图案化的第一光刻胶层未覆盖区域的金属，获得图案化的金属层。\n\n[0066]具体的，可以采用湿法刻蚀方式对所述金属层进行图案化处理，即利用化学溶液腐蚀去除所述图案化的第一光刻胶层未覆盖区域的金属。\n\n[0067]S2.5-a、在所述图案化的金属层上制备形成多个电性连接位。\n\n[0068]具体的，首先，去除所述图案化的金属层上剩余的所述第一光刻胶层；然后，在所述图案化的金属层上沉积第二光刻胶层；最后，在所述第二光刻胶层上刻蚀出多个电性连接位，所述刻蚀方式可以是光刻蚀、刀模冲切等。\n\n[0069]在另一个实施例中，如图5所示，所述步骤S2包括：\n\n[0070]S2.1-b、制备一PCB板，所述PCB板上设有多个电性连接位。\n\n[0071]S2.2-b、在第一反射层背离基板的一面上均匀涂覆一胶合剂，获得一胶层。\n\n[0072]S2.3-b、将所述PCB板与所述基板对向贴合，形成基板-PCB板一体化结构。\n\n[0073]对步骤S2.1-b至步骤S2.3-b需要说明的是，所述步骤S2.1-b和所述步骤S2.2-b可以交换顺序进行，也可以同时进行。在所述步骤S2.1-b中，采用本领域常规技术手段制备PCB板，在此不再赘述。在所述步骤S2.2-b中，所述胶合剂为透光性理想的胶。\n\n[0074]S3、将多个Mini-LED分别电性连接于各个所述电性连接位上。\n\n[0075]具体的，通过表面组装技术(Surface Mounted Technology,SMT)将多个Mini-LED分别电性连接于各个电性连接位上。\n\n[0076]第三方面，本申请提供了一种背光模组，如图6和图7所示，所述背光模组包括：一第一方面中所述的Mini-LED灯板以及一第二反射层20，所述第二反射层20层叠设置于所述Mini-LED灯板的一面上。\n\n[0077]所述第二反射层20在各个Mini-LED4的位置处分别设有一开口，使得各个Mini-LED4露出。由于开口工艺的原因，各个所述开口与对应的Mini-LED4的边缘之间具有一空隙，但因额外设置了具有增强反射效果的所述第一反射层2，所以光线不会从所述空隙中漏出，从而有效地提高了光线的利用率。\n\n[0078]在一实施例中，所述第二反射层20的材质为具有反射作用的白色油墨。所述第二反射层20的厚度为5微米至10微米，其中，各个Mini-LED4从对应的各个开口处凸伸出所述第二反射层20的上表面外，即：在一纵向上，所述第二反射层20的顶部不高于各个Mini-LED4的顶部，以保证各个Mini-LED4具有较高的出光效率。\n\n[0079]本领域技术人员可以理解，所述背光模组还可以包括一些其他的结构件，例如：光学膜片组、保护层、外框、胶框、胶层、遮光层等，这些结构件是保证所述背光模组正常工作的必需组成元件或具有提升所述背光模组某方面性能的作用。\n\n[0080]在一实施例中，如图8所示，所述背光模组主要包括：一Mini-LED灯板、一第二反射层20、一外框30、一胶框40、一双面胶层50、一保护层60、一光学膜片组70以及一遮光层80。其中，所述外框30是由一金属背板301和四个金属挡墙302(图8中仅示出两个金属挡墙302)围合形成，所述金属背板301、所述双面胶层50、所述Mini-LED灯板、所述第二反射层20、所述保护层60以及所述光学膜片组70依次层叠设置。所述胶框40设置于所述双面胶层50、所述Mini-LED灯板、所述保护层60以及所述光学膜片组70的四周，并且所述胶框40设置于所述金属背板301上，各个所述金属挡墙302分别设置于所述胶框40的外围。所述遮光层80设置于各个所述金属挡墙302的顶部，并延伸至所述光学膜片组70的部分区域的上方，以确保不遮挡各个Mini-LED4。\n\n[0081]所述外框30是所述背光模组的整体结构的承载，用于支撑所述背光模组的各个组成元件。所述外框30的材质可以为铜(Cu)、铝(Al)、合金等。所述金属背板301和所述四个金属挡墙302可以是一体成型结构，也可以不是一体成型结构。所述双面胶层50用于将所述Mini-LED灯板10粘附于所述金属背板301上。\n\n[0082]所述Mini-LED灯板和所述第二反射层20的结构组成，以及两者之间的关系如上所述，在此不再赘述。\n\n[0083]所述保护层60覆盖于所述多个Mini-LED4上，并延伸至所述第二反射层20上。所述保护层60用于封装所述多个Mini-LED4，以避免所述多个Mini-LED4出现脱落、受潮等问题。所述保护层60的材质可以是硅胶、环氧树脂或其它具有较高光透过率的胶体材料。\n\n[0084]所述光学膜片组70可以包括棱镜片、量子点膜、扩散片、反射式偏光片等中的一种或多种，以使背光模组适应多样化的应用。例如，棱镜片可以改变光线的出射角度，从而改变显示装置的可观看角度。量子点膜可以提供单色性更高的量子点发光，从而拓宽显示装置的显示色域，以及大幅度地提升显示亮度。反射式偏光片可以提高光线的利用率，同时使出射光线具有偏振性，从而可以省略液晶显示面板中的下偏光片。\n\n[0085]所述遮光层80和所述光学膜片组70之间具有一空气间隙10，即：在一纵向上，各个所述金属挡墙302的顶部高于所述光学膜片组70的顶部，所述空气间隙10的作用是：为所述光学膜片组70、所述Mini-LED灯板等组成元件预留形变的空间，从而避免所述背光模组在高温或低温环境下出现变形的问题。\n\n[0086]第四方面，本申请提供了一种背光模组的制备方法，用于制备第三方面中所述的背光模组，包括步骤：制备一mini-LED灯板；以及，在所述微型发光二极管灯板的一面上印刷形成一第二反射层，所述第二反射层在各个所述微型发光二极管的位置处分别设有一开口，使得各个所述微型发光二极管露出。\n\n[0087]其中，所述mini-LED灯板的制备方法详见第二方面中所述，在此不再赘述。可以采用喷印、丝印等印刷方式制备所述第二反射层。\n\n[0088]本领域技术人员可以理解，所述背光模组的制备方法还包括制备一些其他结构件的步骤，这些结构件是保证所述背光模组正常工作的必需组成元件或具有提升所述背光模组某方面性能的作用，例如：制备光学膜片组、保护层、外框、胶框、胶层、遮光层等结构件的步骤。\n\n[0089]在一实施例中，提供了一种背光模组的制备方法，用于制备如图8所示的背光模组，如图9所示，具体包括如下步骤：\n\n[0090]S10、提供一外框，所述外框是由一金属背板和四个金属挡墙围合形成的一体化结构。\n\n[0091]S20、提供一胶框，将所述胶框贴附于所述金属背板的一面上。\n\n[0092]S30、在所述胶框内的所述金属背板的一面上均匀涂覆一胶合剂，烘干形成所述双面胶层。\n\n[0093]S40、提供一Mini-LED灯板，将所述Mini-LED灯板贴附于所述金属背板涂覆有所述双面胶层的一面上。\n\n[0094]S50、在所述Mini-LED灯板背离所述金属背板的一面上，采用丝印工艺印刷形成一第二反射层。\n\n[0095]S60、在多个Mini-LED和所述第二反射层的表面上喷涂形成一保护层。\n\n[0096]S70、提供一组装好的光学膜片组，将所述光学膜片组贴附于所述保护层背离所述Mini-LED灯板的一面上。\n\n[0097]S80、在各个所述金属挡墙的顶部分别贴附一遮光胶，以形成一遮光层，获得所述背光模组。\n\n[0098]对上述步骤需要说明的是，在所述步骤S10中，所述外框可以通过模具一体成型，工艺参数不作具体限定，可依据实际需要自行选择。在所述步骤S40中，所述Mini-LED灯板参照第二方面中所述的制备方法制得。在所述步骤S70中，所述光学膜片组采用本领域的常规技术手段进行组装，在此不再赘述。\n\n[0099]第五方面，本申请实施例提供了一种显示装置，所述显示装置可为手机、电脑、数码相机、数码摄像机、游戏机、音频再生装置、信息终端机、智能可穿戴设备、智能称重电子秤、车载显示器、电视机等任何具有显示功能的产品或部件，其中，所述智能可穿戴设备可为智能手环、智能手表、智能眼镜等。\n\n[0100]所述显示装置包括：一如第三方面中所述的背光模组以及一显示面板，所述显示面板位于所述背光模组的出光侧。所述背光模组可以在整个出光面内均匀的发出光线，用于为所述显示面板提供亮度重组且分布均匀的光线，以使所述显示面板可以正常显示影像。\n\n[0101]所述显示面板具有多个呈阵列分布的像素单元，每个像素单元都可以独立控制背光模组入射于其内的光线透过率和色彩，以对所述背光模组射出的光线进行调制，实现图像显示。所述显示面板可以是现有技术中的产品，例如：液晶显示面板、量子点显示面板等。\n\n[0102]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0103]以上对本申请实施例所提供的一种微型发光二极管灯板、背光模组及其制备方法，进行了详细介绍。本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种微型发光二极管灯板、背光模组及其制备方法。\n\n背景技术\n\n[0002]液晶显示器是显示面板市场上的主流产品。背光模组是液晶显示器的关键部件之一，用于提供充足且分布均匀的光源，使得液晶显示器可以显示图面。传统的背光模组通常包括背光源、导光板、光学膜片、胶框等部件，依光源分布位置不同，传统的背光模组分为侧光式背光模组和直下式背光模组两大类型。\n\n[0003]传统的背光模组开启时，由于其上所有的背光源都会开启，所以液晶显示面板上无需显示的区域亦会受到背光照射，使得亮态和暗态之间对比度低。微型发光二极管(Mini-Light Emitting Diode,Mini-LED)背光模组具有显示性能佳、低功率、高亮度等特点，且Mini-LED背光模组开启时，并非所有的Mini-LED全部开启，而是开启与显示画面相匹配的Mini-LED，使得无需显示的区域呈现完全的暗态，从而实现高对比度。\n\n[0004]现有Mini-LED背光模组包括Mini-LED灯板，如图1所示，所述Mini-LED灯板一般包括：一玻璃基板100；多个Mini-LED200(Mini-Light Emitting Diode,Mini-LED)，间隔设置所述玻璃基板100上；以及一白油反射层300，层叠设置于所述玻璃基板100上，所述白油反射层300在各个所述Mini-LED200的位置处设有一白油开孔，使得各个所述Mini-LED200在所述白油反射层300上露出。所述白油反射层300用于增强所述玻璃基板100对光线的反射效果，提高光线的利用率，避免所述玻璃基板100上未设有Mini-LED200的区域反射率低、光线损失率大的缺点。但是，由于开孔工艺的原因，无法确保所述白油开孔与所述Mini-LED200充分适配，即：所述白油开孔的孔缘与Mini-LED200的边缘之间具有空隙400，光线会从所述空隙400漏出，从而降低光线的利用率。\n\n发明内容\n\n[0005]本申请实施例提供了一种微型发光二极管灯板、背光模组及其制备方法，以改善现有Mini-LED背光模组存在的光线损失率大、光线利用率低的问题。\n\n[0006]第一方面，本申请提供了一种微型发光二极管灯板，包括：\n\n[0007]一基板；\n\n[0008]一第一反射层，层叠设置于所述基板的一面上；\n\n[0009]一电路层，层叠设置于所述第一反射层背离所述基板的一面上，且所述电路层上设有多个电性连接位；以及\n\n[0010]多个微型发光二极管，分别电性连接于各个所述电性连接位上，并且所述多个微型发光二极管间隔设置。\n\n[0011]进一步地，所述第一反射层为分布式布拉格反射镜结构。\n\n[0012]优选地，所述第一反射层由依次层叠设置的一第一氮化硅层、一氧化硅层和一第二氮化硅层组成。\n\n[0013]优选地，所述第一反射层由依次层叠设置的一第一氮化硅层、一非晶矽层和一第二氮化硅层组成。\n\n[0014]第二方面，本申请提供了一种背光模组，包括：\n\n[0015]至少一如第一方面中所述的微型发光二极管灯板；以及\n\n[0016]一第二反射层，层叠设置于所述微型发光二极管灯板的一面上，且所述第二反射层上设有多个间隔设置的开口，以将各个所述微型发光二极管露出。\n\n[0017]优选地，所述第二反射层的材质为具有反射作用的白色油墨。\n\n[0018]进一步地，所述背光模组还包括：一保护层，覆盖于各个所述微型发光二极管和所述第二反射层上。\n\n[0019]进一步地，所述背光模组还包括：一光学膜片组，层叠设置于所述第二反射层背离所述微型发光二极管灯板的一面上。\n\n[0020]第三方面，本申请提供了一种背光模组的制备方法，包括如下步骤：\n\n[0021]制备一微型发光二极管灯板，所述微型发光二极管灯板包括：一基板；一第一反射层，层叠设置于所述基板的一面上；一电路层，层叠设置于所述第一反射层背离所述基板的一面上，且所述电路层上设有多个电性连接位；以及多个微型发光二极管，分别电性连接于各个所述电性连接位上，并且所述多个微型发光二极管间隔设置；以及\n\n[0022]在所述微型发光二极管灯板的一面上印刷形成一第二反射层，所述第二反射层在各个微型发光二极管的位置处分别设有一开口，使得各个微型发光二极管露出。\n\n[0023]进一步地，所述制备一微型发光二极管灯板，包括如下步骤：\n\n[0024]提供一基板，在所述基板的一面上沉积形成整面的一第一反射层；\n\n[0025]在所述第一反射层背离所述基板的一面上制备形成一电路层，所述电路层上设有多个电性连接位；以及\n\n[0026]将多个微型发光二极管分别电性连接于各个所述电性连接位上。\n\n[0027]本申请提供了一种微型发光二极管灯板、背光模组及其制备方法，产生如下的技术效果：\n\n[0028]本申请提供了一种微型发光二极管灯板，相较于现有的微型发光二极管灯板，增设了一第一反射层，所述第一反射层设置于基板与多个微型发光二极管之间，以解决现有微型发光二极管灯板存在的问题:白油开孔的孔缘与对应的微型发光二极管的边缘之间具有空隙，光线会从所述空隙漏出，从而降低光线的利用率。在本申请的微型发光二极管灯板中，所述空隙内设有所述第一反射层以增强光线的反射效果，有效避免光线从所述空隙漏出，从而提高了光线的利用率，极大地降低了光线的损失率。所述微型发光二极管灯板所述微型发光二极管灯板可以作为背光模组的背光源，具有节约能耗的优点。\n\n附图说明\n\n[0029]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0030]图1为现有技术中Mini-LED灯板的结构示意图。\n\n[0031]图2为本申请提供的Mini-LED灯板的一个实施例的结构示意图。\n\n[0032]图3为本申请提供的Mini-LED灯板的制备方法的一个实施例的流程示意图。\n\n[0033]图4为图3中步骤S2的一个实施例的流程示意图。\n\n[0034]图5为图4中步骤S2的另一个实施例的流程示意图。\n\n[0035]图6为本申请提供的背光模组的一个实施例的横向截面示意图。\n\n[0036]图7为本申请提供的背光模组的一个实施例的纵向截面示意图。\n\n[0037]图8为本申请提供的背光模组的另一个实施例的结构示意图。\n\n[0038]图9为本申请提供的背光模组的制备方法的一个实施例的流程示意图。\n\n具体实施方式\n\n[0039]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0040]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0041]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0042]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0043]第一方面，如图2所示，本申请提供了一种微型发光二极管(Mini-Light EmittingDiode,Mini-LED)灯板，主要包括：一基板1、一第一反射层2、一电路层3以及多个Mini-LED4。所述第一反射层2层叠设置于所述基板1的一面上，所述电路层3层叠设置于所述第一反射层2背离所述基板1的一面上，所述多个Mini-LED4间隔设置于所述电路层3上。\n\n[0044]所述基板1用于承载多个Mini-LED4，所述基板1的材质可以是玻璃。此外，所述基板1对Mini-LED4发出的光线具有反射的作用，以降低光线的损失率。\n\n[0045]所述第一反射层2为分布式布拉格反射镜结构，即：由两种不同折射率的材料层交替设置而形成的复合层结构。所述第一反射层2可以提高光线的利用率，增强光线的反射效果。\n\n[0046]作为一优选的实施方案，所述第一反射层2由依次层叠设置的一第一氮化硅(SiNx)层、一氧化硅(SiOx)层和一第二氮化硅层组成。\n\n[0047]作为另一优选的实施方案，所述第一反射层2由依次层叠设置的一第一氮化硅(SiNx)层、一非晶矽(a-Si)层和一第二氮化硅(SiNx)层组成。\n\n[0048]需要说明的是，所述第一反射层2的整体厚度，以及组成所述第一反射层2的各个材料层的厚度不作具体限定，可依据实际需要自行选择。\n\n[0049]所述电路层3上设有多个电性连接位，每个所述电性连接位包括一正极连接位点和一负极连接位点。所述电路层3可以包括图案化的金属层，所述金属层的材质可以是钼(Mo)、铝(Al)、铜(Cu)或钛(Ti)等单种金属，也可以是合金，并且所述金属层可以是单层结构，也可以是多层结构，所述多层结构中至少两层的材质不相同。\n\n[0050]作为一优选的实施方案，所述电路层3可以是印刷电路板(Printed CircuitBoard,PCB)、BT(Bismaleimide Triazine)板、铝基板、柔性电路(Flexible PrintedCircuit,FPC)板等电路板结构。\n\n[0051]所述多个Mini-LED4分别电性连接于各个所述电性连接位上，即：各个Mini-LED4分别电性连接于一正极连接位点和一负极连接位点上。外部的电源通过所述电性连接位与各个Mini-LED4电性连接，从而为各个Mini-LED4提供发光的电力。所述多个Mini-LED4的数量不作具体限定，可依据实际需要自行选择。\n\n[0052]本领域技术人员可以理解，所述Mini-LED灯板还应包括一些其他所必需的结构件，以确保所述Mini-LED灯板正常工作，例如：胶层等。\n\n[0053]第二方面，本申请提供了一种Mini-LED灯板的制备方法，用于制备第一方面中所述的Mini-LED灯板，如图3所示，包括如下步骤：\n\n[0054]S1、提供一基板，在所述基板的一面上沉积形成一整面的一第一反射层。\n\n[0055]在一个实施例中，采用物理气相沉积(Physical Vapor Deposition,PVD)工艺在所述基板的一面上沉积形成一整面的一第一反射层。\n\n[0056]S2、在所述第一反射层背离所述基板的一面上制备形成一电路层，所述电路层上设有多个电性连接位。\n\n[0057]具体的，制备电路层为本领域常规技术手段，可以直接在所述第一反射层上利用光刻与刻蚀工艺制备形成所述电路层，也可以采用喷墨印刷(Ink-Jet printing,IJP)工艺制备形成所述电路层；或者，先单独制备一电路板结构，然后将所述电路板结构通过胶合剂粘附于所述第一反射层背离所述基板的一面上。\n\n[0058]在一个实施例中，如图4所示，所述步骤S2包括如下步骤：\n\n[0059]S2.1-a、在第一反射层背离基板的一面上沉积形成整面的一金属层。\n\n[0060]具体的，采用物理气相沉积(Physical Vapor Deposition,PVD)工艺在所述第一反射层上沉积形成整面的一金属层，所述金属层的材质优选为铜(Cu)。\n\n[0061]S2.2-a、在所述金属层背离所述第一反射层的一面上制备形成整面的一第一光刻胶层。\n\n[0062]具体的，先将光刻胶材料涂布于所述金属层背离所述第一反射层的一面上，然后烘干，形成所述第一光刻胶层。\n\n[0063]S2.3-a、对所述第一光刻胶层进行图案化处理，获得图案化的第一光刻胶层。\n\n[0064]具体的，所述图案化处理为本领域常规技术手段，包括曝光、显影、烘干等工序。\n\n[0065]S2.4-a、对所述金属层进行图案化处理，即去除所述图案化的第一光刻胶层未覆盖区域的金属，获得图案化的金属层。\n\n[0066]具体的，可以采用湿法刻蚀方式对所述金属层进行图案化处理，即利用化学溶液腐蚀去除所述图案化的第一光刻胶层未覆盖区域的金属。\n\n[0067]S2.5-a、在所述图案化的金属层上制备形成多个电性连接位。\n\n[0068]具体的，首先，去除所述图案化的金属层上剩余的所述第一光刻胶层；然后，在所述图案化的金属层上沉积第二光刻胶层；最后，在所述第二光刻胶层上刻蚀出多个电性连接位，所述刻蚀方式可以是光刻蚀、刀模冲切等。\n\n[0069]在另一个实施例中，如图5所示，所述步骤S2包括：\n\n[0070]S2.1-b、制备一PCB板，所述PCB板上设有多个电性连接位。\n\n[0071]S2.2-b、在第一反射层背离基板的一面上均匀涂覆一胶合剂，获得一胶层。\n\n[0072]S2.3-b、将所述PCB板与所述基板对向贴合，形成基板-PCB板一体化结构。\n\n[0073]对步骤S2.1-b至步骤S2.3-b需要说明的是，所述步骤S2.1-b和所述步骤S2.2-b可以交换顺序进行，也可以同时进行。在所述步骤S2.1-b中，采用本领域常规技术手段制备PCB板，在此不再赘述。在所述步骤S2.2-b中，所述胶合剂为透光性理想的胶。\n\n[0074]S3、将多个Mini-LED分别电性连接于各个所述电性连接位上。\n\n[0075]具体的，通过表面组装技术(Surface Mounted Technology,SMT)将多个Mini-LED分别电性连接于各个电性连接位上。\n\n[0076]第三方面，本申请提供了一种背光模组，如图6和图7所示，所述背光模组包括：一第一方面中所述的Mini-LED灯板以及一第二反射层20，所述第二反射层20层叠设置于所述Mini-LED灯板的一面上。\n\n[0077]所述第二反射层20在各个Mini-LED4的位置处分别设有一开口，使得各个Mini-LED4露出。由于开口工艺的原因，各个所述开口与对应的Mini-LED4的边缘之间具有一空隙，但因额外设置了具有增强反射效果的所述第一反射层2，所以光线不会从所述空隙中漏出，从而有效地提高了光线的利用率。\n\n[0078]在一实施例中，所述第二反射层20的材质为具有反射作用的白色油墨。所述第二反射层20的厚度为5微米至10微米，其中，各个Mini-LED4从对应的各个开口处凸伸出所述第二反射层20的上表面外，即：在一纵向上，所述第二反射层20的顶部不高于各个Mini-LED4的顶部，以保证各个Mini-LED4具有较高的出光效率。\n\n[0079]本领域技术人员可以理解，所述背光模组还可以包括一些其他的结构件，例如：光学膜片组、保护层、外框、胶框、胶层、遮光层等，这些结构件是保证所述背光模组正常工作的必需组成元件或具有提升所述背光模组某方面性能的作用。\n\n[0080]在一实施例中，如图8所示，所述背光模组主要包括：一Mini-LED灯板、一第二反射层20、一外框30、一胶框40、一双面胶层50、一保护层60、一光学膜片组70以及一遮光层80。其中，所述外框30是由一金属背板301和四个金属挡墙302(图8中仅示出两个金属挡墙302)围合形成，所述金属背板301、所述双面胶层50、所述Mini-LED灯板、所述第二反射层20、所述保护层60以及所述光学膜片组70依次层叠设置。所述胶框40设置于所述双面胶层50、所述Mini-LED灯板、所述保护层60以及所述光学膜片组70的四周，并且所述胶框40设置于所述金属背板301上，各个所述金属挡墙302分别设置于所述胶框40的外围。所述遮光层80设置于各个所述金属挡墙302的顶部，并延伸至所述光学膜片组70的部分区域的上方，以确保不遮挡各个Mini-LED4。\n\n[0081]所述外框30是所述背光模组的整体结构的承载，用于支撑所述背光模组的各个组成元件。所述外框30的材质可以为铜(Cu)、铝(Al)、合金等。所述金属背板301和所述四个金属挡墙302可以是一体成型结构，也可以不是一体成型结构。所述双面胶层50用于将所述Mini-LED灯板10粘附于所述金属背板301上。\n\n[0082]所述Mini-LED灯板和所述第二反射层20的结构组成，以及两者之间的关系如上所述，在此不再赘述。\n\n[0083]所述保护层60覆盖于所述多个Mini-LED4上，并延伸至所述第二反射层20上。所述保护层60用于封装所述多个Mini-LED4，以避免所述多个Mini-LED4出现脱落、受潮等问题。所述保护层60的材质可以是硅胶、环氧树脂或其它具有较高光透过率的胶体材料。\n\n[0084]所述光学膜片组70可以包括棱镜片、量子点膜、扩散片、反射式偏光片等中的一种或多种，以使背光模组适应多样化的应用。例如，棱镜片可以改变光线的出射角度，从而改变显示装置的可观看角度。量子点膜可以提供单色性更高的量子点发光，从而拓宽显示装置的显示色域，以及大幅度地提升显示亮度。反射式偏光片可以提高光线的利用率，同时使出射光线具有偏振性，从而可以省略液晶显示面板中的下偏光片。\n\n[0085]所述遮光层80和所述光学膜片组70之间具有一空气间隙10，即：在一纵向上，各个所述金属挡墙302的顶部高于所述光学膜片组70的顶部，所述空气间隙10的作用是：为所述光学膜片组70、所述Mini-LED灯板等组成元件预留形变的空间，从而避免所述背光模组在高温或低温环境下出现变形的问题。\n\n[0086]第四方面，本申请提供了一种背光模组的制备方法，用于制备第三方面中所述的背光模组，包括步骤：制备一mini-LED灯板；以及，在所述微型发光二极管灯板的一面上印刷形成一第二反射层，所述第二反射层在各个所述微型发光二极管的位置处分别设有一开口，使得各个所述微型发光二极管露出。\n\n[0087]其中，所述mini-LED灯板的制备方法详见第二方面中所述，在此不再赘述。可以采用喷印、丝印等印刷方式制备所述第二反射层。\n\n[0088]本领域技术人员可以理解，所述背光模组的制备方法还包括制备一些其他结构件的步骤，这些结构件是保证所述背光模组正常工作的必需组成元件或具有提升所述背光模组某方面性能的作用，例如：制备光学膜片组、保护层、外框、胶框、胶层、遮光层等结构件的步骤。\n\n[0089]在一实施例中，提供了一种背光模组的制备方法，用于制备如图8所示的背光模组，如图9所示，具体包括如下步骤：\n\n[0090]S10、提供一外框，所述外框是由一金属背板和四个金属挡墙围合形成的一体化结构。\n\n[0091]S20、提供一胶框，将所述胶框贴附于所述金属背板的一面上。\n\n[0092]S30、在所述胶框内的所述金属背板的一面上均匀涂覆一胶合剂，烘干形成所述双面胶层。\n\n[0093]S40、提供一Mini-LED灯板，将所述Mini-LED灯板贴附于所述金属背板涂覆有所述双面胶层的一面上。\n\n[0094]S50、在所述Mini-LED灯板背离所述金属背板的一面上，采用丝印工艺印刷形成一第二反射层。\n\n[0095]S60、在多个Mini-LED和所述第二反射层的表面上喷涂形成一保护层。\n\n[0096]S70、提供一组装好的光学膜片组，将所述光学膜片组贴附于所述保护层背离所述Mini-LED灯板的一面上。\n\n[0097]S80、在各个所述金属挡墙的顶部分别贴附一遮光胶，以形成一遮光层，获得所述背光模组。\n\n[0098]对上述步骤需要说明的是，在所述步骤S10中，所述外框可以通过模具一体成型，工艺参数不作具体限定，可依据实际需要自行选择。在所述步骤S40中，所述Mini-LED灯板参照第二方面中所述的制备方法制得。在所述步骤S70中，所述光学膜片组采用本领域的常规技术手段进行组装，在此不再赘述。\n\n[0099]第五方面，本申请实施例提供了一种显示装置，所述显示装置可为手机、电脑、数码相机、数码摄像机、游戏机、音频再生装置、信息终端机、智能可穿戴设备、智能称重电子秤、车载显示器、电视机等任何具有显示功能的产品或部件，其中，所述智能可穿戴设备可为智能手环、智能手表、智能眼镜等。\n\n[0100]所述显示装置包括：一如第三方面中所述的背光模组以及一显示面板，所述显示面板位于所述背光模组的出光侧。所述背光模组可以在整个出光面内均匀的发出光线，用于为所述显示面板提供亮度重组且分布均匀的光线，以使所述显示面板可以正常显示影像。\n\n[0101]所述显示面板具有多个呈阵列分布的像素单元，每个像素单元都可以独立控制背光模组入射于其内的光线透过率和色彩，以对所述背光模组射出的光线进行调制，实现图像显示。所述显示面板可以是现有技术中的产品，例如：液晶显示面板、量子点显示面板等。\n\n[0102]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0103]以上对本申请实施例所提供的一种微型发光二极管灯板、背光模组及其制备方法，进行了详细介绍。本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10868, 23922, '技术领域\n\n[0001]本申请涉及一种显示器技术领域，尤其涉及一种LED显示背板检测装置及其检测方法。\n\n背景技术\n\n[0002]微型发光二极管(Micro light emitting diode，简称Micro-LED)通常是指在传统LED芯片结构基础上，将LED芯片尺寸规格缩小到200微米以内的尺寸，将红、绿、蓝三色MicroLED按照一定的规则排列在薄膜晶体管(Thin Film Transistor，简称TFT)或互补金属氧化物半导体(Complementary Metal Oxide Semiconductor，简称COMS)上，则形成了能够实现全彩显示的微器件。此种显示器具有独立控制的显示画素，具有独立发光控制、高辉度、低耗电、超高分辨率和超高色彩饱和度等特点，并且Micro-LED微显示器件由于具有自发光的技术特性，还可以实现柔性、透明显示等，而其耗电量仅约为液晶面板的10％。MicroLED是新一代显示技术，是LED微缩化和矩阵化技术，简单来说，就是将LED背光源进行薄膜化、微小化、阵列化，可以让LED单元小于100微米，与OLED一样能够实现每个图元单独定址，单独驱动发光。Mini/MicroLED(简称MLED)显示技术在近两年进入加速发展阶段，可以使用在中小型高附加价值显示器应用领域。相较OLED屏幕，MLED显示可以在成本、对比度、高亮度和轻薄外形上表现出更佳性能。\n\n[0003]Micro-LED发展成未来显示技术的热点之一，和目前的LCD和OLED显示器件相比，具有反应快、高色域、高PPI、低能耗等优势。但其技术难点多且技术复杂，特别是其关键技术巨量转移技术、LED颗粒微型化成为技术瓶颈，而Mini-LED作为Micro-LED与背板结合的产物，具有高对比度、高显色性能等可与OLED相媲美的特点，成本稍高LCD，仅为OLED的六成左右，相对Micro-LED、OLED更易实施，所以Mini-LED成为各大面板厂商布局热点。\n\n[0004]Mini-LED背板或Micro-LED背板制作和切割过程中，由于制程原因，可能会有背板划伤、污染、膜层残留和过刻等导致的背板短路、断路等缺陷，从而影响LED SMT(SurfaceMounted Technology，表面贴装技术)后的点亮效果。但是传统检测方式AOI&AOH(Automated Optical Inspection，自动光学检测)检测出结果，需要人员研判后才能确定缺失是否对点灯有影响，且受制于研判人员的差异及无法直接判定对点灯影响。\n\n[0005]在实现过程中，发明人发现传统技术中至少存在如下问题：传统的显示背板检测方式通常采用人员研判后才能确定缺失是否对点灯有影响，背板检测过程复杂，且背板缺陷检测率低。\n\n发明内容\n\n[0006]为了克服现有技术中传统的显示背板检测方式通常采用人员研判后才能确定缺失是否对点灯有影响，背板检测过程复杂，且背板缺陷检测率低的技术问题，本申请实施例提供一种LED显示背板检测装置及其检测方法。\n\n[0007]本发明实施例提供了一种LED显示背板检测装置，包括：\n\n[0008]载台，所述载台用于放置待检测背板，所述待检测背板包含多个LED发光元件；\n\n[0009]导电线路电路板，所述导电线路电路板设置有多条导电线路；\n\n[0010]多个LED绑定面，所述LED绑定面设置在所述导电线路电路板上，每个所述LED绑定面与所述导电线路电路板内的所述导电线路相连接；每个所述LED绑定面与所述待检测背板上的所述LED发光元件一一对应连接；\n\n[0011]信号控制器，所述信号控制器与所述导电线路电路板相连接，所述信号控制器配置成用于提供电压给所述导电线路电路板；\n\n[0012]其中，当所述信号控制器提供电压给所述导电线路电路板时，所述导电线路电路板传输所述电压给所述待检测背板上的各个所述LED发光元件并点亮各个所述LED发光元件，所述信号控制器根据各个所述LED发光元件的亮暗程度来判定所述待检测背板相对应位置的品质。\n\n[0013]根据本发明实施例所提供的LED显示背板检测装置，所述LED显示背板检测装置还包括基板固定引脚，所述基板固定引脚设置在所述载台的四周，所述基板固定引脚均匀设置，所述基板固定引脚用于拆卸或固定所述待检测背板。\n\n[0014]根据本发明实施例所提供的LED显示背板检测装置，所述基板固定引脚的材料为PCB或PVC或金属。\n\n[0015]根据本发明实施例所提供的LED显示背板检测装置，所述LED显示背板检测装置还包括连接所述导电线路电路板与所述信号控制器之间的COF绑定面，所述COF绑定面设置在所述导电线路电路板的侧边，所述COF绑定面与所述待检测背板上的COF相贴合。\n\n[0016]根据本发明实施例所提供的LED显示背板检测装置，所述COF绑定面与所述导电线路电路板内的线路一一对应，待检测背板上的各个所述LED发光元件均为单独控制。\n\n[0017]根据本发明实施例所提供的LED显示背板检测装置，所述待检测背板为Mini-LED背板或Micro-LED背板。\n\n[0018]根据本发明实施例所提供的LED显示背板检测装置，在所述LED绑定面内还包括阴阳极引脚，所述阴阳极引脚具有保护层；所述保护层为弹性导电胶，包括导电橡胶或PVC材料。\n\n[0019]根据本发明实施例所提供的LED显示背板检测装置，所述导电线路电路板的材料为PCB或PVC或金属。\n\n[0020]根据本发明实施例所提供的LED显示背板检测装置，所述载台的尺寸大于所述待检测背板的尺寸，所述载台的材料为玻璃或金属或塑胶或石英石。\n\n[0021]本发明实施例还提供一种LED显示背板的检测方法，包括以下步骤：\n\n[0022]将待检测背板放置在载台上，通过基板固定引脚将所述待检测背板固定；\n\n[0023]将所述待检测背板的各个LED发光元件与导电线路电路板上的LED绑定面进行对齐，使所述待检测背板的各个所述LED发光元件的阴阳极引脚与所述LED绑定面内的阴阳极引脚一一对应；\n\n[0024]将所述待检测背板的COF板与COF绑定面对应并压合；\n\n[0025]在信号控制器中输入所需要的电压，点亮所述待检测背板的所述LED发光元件，所述信号控制器根据所述LED发光元件的亮暗程度判断所述待检测背板的品质。\n\n[0026]本发明的有益效果为：本发明实施例所提供的一种LED显示背板检测装置及其检测方法，包括载台，导电线路电路板，LED绑定面，信号控制器等其他部件，载台用于承载待检测背板，所述待检测背板包含多个LED发光元件；所述导电线路电路板设置有多条导电线路，每个所述LED绑定面与所述待检测背板上的所述LED发光元件一一对应连接；所述信号控制器与所述导电线路电路板相连接，所述信号控制器给所述导电线路电路板提供电压。本发明实施例的LED显示背板检测装置及其检测方法通过信号控制器给所述导电线路电路板传输电压信号，所述导电线路电路板给所述待检测背板上的各个所述LED发光元件传输电压并点亮各个所述LED发光元件，根据各个所述LED发光元件的亮暗程度来判定所述待检测背板相对应位置的品质。本发明实施例所提供的一种LED显示背板检测装置及其检测方法，通过改善传统背板光学检测方式，避免了需要人员研判后才能确定缺失是否对点灯有影响，且受制于研判人员的差异及无法直接判定对点灯影响的问题，从而提高判定基板是否满足出货标准效率及准确率；且本实施例所提供的LED显示背板检测装置及其检测方法，使用成本比较低，容易移动，还可以根据不同的LED背板来设计制作不同的检测装置；所述检测方法可以有效的判定不良品，以及确定所述不良品的缺陷点位区域。\n\n附图说明\n\n[0027]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0028]图1为本实施例提供的LED显示背板检测装置结构示意图。\n\n[0029]图2为本实施例提供的LED显示背板检测方法流程示意图。\n\n具体实施方式\n\n[0030]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0031]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0032]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0033]如图1所示，本发明实施例提供了一种LED显示背板检测装置，包括：\n\n[0034]载台10，所述载台10用于放置承载可拆的待检测背板60，所述待检测背板60包含多个LED发光元件601；\n\n[0035]导电线路电路板20，所述导电线路电路板20设置有多条导电线路；\n\n[0036]LED绑定面201，所述LED绑定面201设置在所述导电线路电路板20上，所述导电线路电路板20包含多个所述LED绑定面201，每个所述LED绑定面201均与所述导电线路电路板20内的所述导电线路相连接；每个所述LED绑定面201与所述待检测背板60上的所述LED发光元件601一一对应连接；\n\n[0037]其中，所述导电线路电路板20满足与所述LED绑定面201设计线路一一对应，可以起到单独控制每个所述LED绑定面201的电压信号输出；\n\n[0038]信号控制器30，所述信号控制器30与所述导电线路电路板20相连接，所述信号控制器30给所述导电线路电路板20提供电压；\n\n[0039]其中，所述信号控制器30给所述导电线路电路板20传输电压信号，所述导电线路电路板20给所述待检测背板60上的各个所述LED发光元件601传输电压并点亮各个所述LED发光元件601，根据各个所述LED发光元件601的亮暗程度来判定所述待检测背板60相对应位置的品质。\n\n[0040]所述LED显示背板检测装置还包括基板固定引脚40，所述基板固定引脚40设置在所述载台10的四周，所述基板固定引脚40均匀设置，所述基板固定引脚40用于可拆卸固定所述待检测背板60。所述基板固定引脚40包括至少两个固定脚元件。在本实施例中，所述基板固定引脚40包括8个固定脚元件，各个所述固定脚元件均匀分布在所述载台10的周边，进而所述待检测背板60能够放置在所述载台10上。进一步的，所述基板固定引脚40的材料包括但不限于是PCB、PVC(Polyvinyl chloride，聚氯乙烯)或金属等材料。需要说明的是，所述基板固定引脚40需满足可固定且不易划伤基板。\n\n[0041]所述LED显示背板检测装置还包括连接所述导电线路电路板20与所述信号控制器30之间的COF(Chip On Film，常称覆晶薄膜)绑定面50，所述COF绑定面50设置在所述导电线路电路板20的侧边，所述COF绑定面50与所述待检测背板60上的COF板602相贴合。所述COF绑定面50与所述导电线路电路板20内的线路一一对应，所述待检测背板60上的各个所述LED发光元件601均可以被单独控制。\n\n[0042]其中，所述待检测背板60上的所述COF板602可用来传输电压信号。具体而言，基于所述COF板602连接在所述信号控制器30与所述导电线路电路板20之间，所述信号控制器30可通过所述COF板602向所述导电线路电路板20传输信号，所述导电线路电路板20将电压信号传输至每个所述LED发光元件601，并点亮每个所述LED发光元件601，在根据各个所述LED发光元件601的亮暗程度来判定所述待检测背板60相对应位置的品质。在本实施例中，通过设置所述COF绑定面50，进而方便所述导电线路电路板20与所述信号控制器30之间的连接，简化了检测过程。\n\n[0043]具体地，所述载台10指的是可以用来放置承载所述待检测背板60的一个平台。所述载台10的材料包括但不限于金属、塑料或石英石等其他材料。所述载台10的尺寸大于所述待检测背板60的尺寸，载台10的具体尺寸可根据待检测背板60的尺寸而确定。所述待检测背板60可以卡接在所述载台10上，所述载台10将所述待检测背板60固定住。所述待检测背板60包含多个LED发光元件601，各个所述LED发光元件601可以为矩阵式结构排列或其他结构排列。在本实施例中，所述待检测背板60的所述LED发光元件601为矩阵式结构排列，所述待检测背板60至少包括一行所述LED发光元件601和至少一列所述LED发光元件601。所述LED绑定面201为所述LED发光元件601与所述导电线路电路板20的具体连接面，所述LED绑定面201的排列结构与所述待检测背板60的所述LED发光元件601相同，进一步的所述LED绑定面201与所述待检测背板60的所述LED发光元件601一一对应。\n\n[0044]在本实施例中，所述导电线路电路板20包含的电路板的材料包括但不限于是PCB、PVC、或金属等。所述导电线路电路板20可起到有效固定所述LED绑定面201以及所述LED发光元件601的作用，使得所述LED绑定面201以及所述LED发光元件601在电路板上不易脱落、走位和偏移等。\n\n[0045]具体地，在所述LED绑定面201内还包括阴阳极引脚，所述阴阳极引脚与所述待检测背板60的所述LED发光元件601的阴阳极引脚一一对应连接，并保持接触良好。进一步的，所述LED绑定面201的阴阳极引脚表面设置有弹性导电胶，具有防划伤基板作用。所述LED绑定面201的阴阳极引脚设置有保护层，其中，保护层可以是导电橡胶或PVC等材料，能够满足易导电、不易破损、不易划伤对应的焊盘。\n\n[0046]具体地，在本实施例中，在具体的实际操作中，将所述待检测背板60放置在载台10上，将所述待检测背板60的所述LED发光元件601与所述导电线路电路板20上的所述LED绑定面201进行对标，使所述LED绑定面201的阴阳极引脚与所述LED发光元件601的阴阳极引脚一一对应连接，并且将所述待检测背板60与所述导电线路电路板20准确压合，正常连接接触。所述信号控制器30输入所述待检测背板60所需要的电压，所述导电线路电路板20将电压信号传输至所述LED发光元件601，点亮所述LED发光元件601。\n\n[0047]具体而言，本发明实施例所提供的LED显示背板检测装置，基于所述待检测背板60可拆卸放置在所述载台10上，通过载台10固定所述待检测背板60；将所述待检测背板60的所述LED发光元件601与所述LED绑定面201一一对应连接，将所述信号控制器30与所述导电线路电路板20相连接。进而所述信号传感器30给所述导电线路电路板20传输电压信号，点亮所述LED发光元件601，检测人员可以通过所述LED发光元件601的亮暗程度来判定所述待检测背板60相对应位置的品质；避免了需要人员研判后才能确定缺失是否对点灯有影响，且受制于研判人员的差异及无法直接判定对点灯影响的问题，从而提高判定基板是否满足出货标准效率及准确率；且本实施例所提供的LED显示背板检测装置及其检测方法，使用成本比较低，容易移动，还可以根据不同的LED背板来设计制作不同的检测装置；所述检测方法可以有效的判定不良品，以及确定所述不良品的缺陷点位区域。还达到了提前判定缺陷、简化检测流程、提高背板缺陷检测率。\n\n[0048]在本实施例中，所述待检测背板60为Mini-LED背板或Micro-LED背板。其中，Mini-LED背板可以是AM(Active-matrix主动式)Mini-LED背板。需要说明的是，待检测背板需满足在SMT前裸露出LED元件的连接焊盘(Bondingpad)和COF板的焊盘(Bonding pad)存在，便于显示背板检测设备对应贴合检测。需要说明的是，基于本申请，可根据待检测背板的不同种类，更换对应不同种类的检测电路板，满足不同检测需求。\n\n[0049]如图2所示，为本实施例所提供的一种LED显示背板的检测方法流程示意图。\n\n[0050]参阅图2，在本实施例中，还提供了一种LED显示背板的检测方法，包括以下步骤：\n\n[0051]步骤S1、将待检测背板放置在载台上，通过基板固定引脚将所述待检测背板固定；\n\n[0052]步骤S2、将所述待检测背板的各个LED发光元件与导电线路电路板上的LED绑定面进行对齐，使所述待检测背板的各个所述LED发光元件的阴阳极引脚与所述LED绑定面内的阴阳极引脚一一对应；\n\n[0053]步骤S3、将所述待检测背板的COF板与COF绑定面对应并压合；\n\n[0054]步骤S4、在信号控制器中输入所需要的电压，点亮所述待检测背板的所述LED发光元件，根据所述LED发光元件的亮暗程度判断所述待检测背板的品质质量。\n\n[0055]具体而言，通过将所述待检测背板可拆卸放置在所述载台上，载台固定住所述待检测背板；将所述待检测背板的所述LED发光元件与所述LED绑定面一一对应连接，将所述信号控制器与所述导电线路电路板相连接。进而所述信号传感器给所述导电线路电路板传输电压信号，点亮所述LED发光元件，检测人员可以通过所述LED发光元件的亮暗程度来判定所述待检测背板相对应位置的品质；避免了需要人员研判后才能确定缺失是否对点灯有影响，且受制于研判人员的差异及无法直接判定对点灯影响的问题，从而提高判定基板是否满足出货标准效率及准确率；且本实施例所提供的LED显示背板检测装置及其检测方法，使用成本比较低，容易移动，还可以根据不同的LED背板来设计制作不同的检测装置；所述检测方法可以有效的判定不良品，以及确定所述不良品的缺陷点位区域。还达到了提前判定缺陷、简化检测流程、提高背板缺陷检测率。\n\n[0056]本发明实施例所提供的一种LED显示背板检测装置及其检测方法，包括载台，导电线路电路板，LED绑定面，信号控制器等其他部件，载台用于承载待检测背板，所述待检测背板包含多个LED发光元件；所述导电线路电路板设置有多条导电线路，每个所述LED绑定面与所述待检测背板上的所述LED发光元件一一对应连接；所述信号控制器与所述导电线路电路板相连接，所述信号控制器给所述导电线路电路板提供电压。本发明实施例的LED显示背板检测装置及其检测方法通过信号控制器给所述导电线路电路板传输电压信号，所述导电线路电路板给所述待检测背板上的各个所述LED发光元件传输电压并点亮各个所述LED发光元件，根据各个所述LED发光元件的亮暗程度来判定所述待检测背板相对应位置的品质。本发明实施例所提供的一种LED显示背板检测装置及其检测方法，通过改善传统背板光学检测方式，避免了需要人员研判后才能确定缺失是否对点灯有影响，且受制于研判人员的差异及无法直接判定对点灯影响的问题，从而提高判定基板是否满足出货标准效率及准确率；且本实施例所提供的LED显示背板检测装置及其检测方法，使用成本比较低，容易移动，还可以根据不同的LED背板来设计制作不同的检测装置；所述检测方法可以有效的判定不良品，以及确定所述不良品的缺陷点位区域。\n\n[0057]以上对本申请实施例所提供的一种LED显示背板检测装置及其检测方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及一种显示器技术领域，尤其涉及一种LED显示背板检测装置及其检测方法。\n\n背景技术\n\n[0002]微型发光二极管(Micro light emitting diode，简称Micro-LED)通常是指在传统LED芯片结构基础上，将LED芯片尺寸规格缩小到200微米以内的尺寸，将红、绿、蓝三色MicroLED按照一定的规则排列在薄膜晶体管(Thin Film Transistor，简称TFT)或互补金属氧化物半导体(Complementary Metal Oxide Semiconductor，简称COMS)上，则形成了能够实现全彩显示的微器件。此种显示器具有独立控制的显示画素，具有独立发光控制、高辉度、低耗电、超高分辨率和超高色彩饱和度等特点，并且Micro-LED微显示器件由于具有自发光的技术特性，还可以实现柔性、透明显示等，而其耗电量仅约为液晶面板的10％。MicroLED是新一代显示技术，是LED微缩化和矩阵化技术，简单来说，就是将LED背光源进行薄膜化、微小化、阵列化，可以让LED单元小于100微米，与OLED一样能够实现每个图元单独定址，单独驱动发光。Mini/MicroLED(简称MLED)显示技术在近两年进入加速发展阶段，可以使用在中小型高附加价值显示器应用领域。相较OLED屏幕，MLED显示可以在成本、对比度、高亮度和轻薄外形上表现出更佳性能。\n\n[0003]Micro-LED发展成未来显示技术的热点之一，和目前的LCD和OLED显示器件相比，具有反应快、高色域、高PPI、低能耗等优势。但其技术难点多且技术复杂，特别是其关键技术巨量转移技术、LED颗粒微型化成为技术瓶颈，而Mini-LED作为Micro-LED与背板结合的产物，具有高对比度、高显色性能等可与OLED相媲美的特点，成本稍高LCD，仅为OLED的六成左右，相对Micro-LED、OLED更易实施，所以Mini-LED成为各大面板厂商布局热点。\n\n[0004]Mini-LED背板或Micro-LED背板制作和切割过程中，由于制程原因，可能会有背板划伤、污染、膜层残留和过刻等导致的背板短路、断路等缺陷，从而影响LED SMT(SurfaceMounted Technology，表面贴装技术)后的点亮效果。但是传统检测方式AOI&AOH(Automated Optical Inspection，自动光学检测)检测出结果，需要人员研判后才能确定缺失是否对点灯有影响，且受制于研判人员的差异及无法直接判定对点灯影响。\n\n[0005]在实现过程中，发明人发现传统技术中至少存在如下问题：传统的显示背板检测方式通常采用人员研判后才能确定缺失是否对点灯有影响，背板检测过程复杂，且背板缺陷检测率低。\n\n发明内容\n\n[0006]为了克服现有技术中传统的显示背板检测方式通常采用人员研判后才能确定缺失是否对点灯有影响，背板检测过程复杂，且背板缺陷检测率低的技术问题，本申请实施例提供一种LED显示背板检测装置及其检测方法。\n\n[0007]本发明实施例提供了一种LED显示背板检测装置，包括：\n\n[0008]载台，所述载台用于放置待检测背板，所述待检测背板包含多个LED发光元件；\n\n[0009]导电线路电路板，所述导电线路电路板设置有多条导电线路；\n\n[0010]多个LED绑定面，所述LED绑定面设置在所述导电线路电路板上，每个所述LED绑定面与所述导电线路电路板内的所述导电线路相连接；每个所述LED绑定面与所述待检测背板上的所述LED发光元件一一对应连接；\n\n[0011]信号控制器，所述信号控制器与所述导电线路电路板相连接，所述信号控制器配置成用于提供电压给所述导电线路电路板；\n\n[0012]其中，当所述信号控制器提供电压给所述导电线路电路板时，所述导电线路电路板传输所述电压给所述待检测背板上的各个所述LED发光元件并点亮各个所述LED发光元件，所述信号控制器根据各个所述LED发光元件的亮暗程度来判定所述待检测背板相对应位置的品质。\n\n[0013]根据本发明实施例所提供的LED显示背板检测装置，所述LED显示背板检测装置还包括基板固定引脚，所述基板固定引脚设置在所述载台的四周，所述基板固定引脚均匀设置，所述基板固定引脚用于拆卸或固定所述待检测背板。\n\n[0014]根据本发明实施例所提供的LED显示背板检测装置，所述基板固定引脚的材料为PCB或PVC或金属。\n\n[0015]根据本发明实施例所提供的LED显示背板检测装置，所述LED显示背板检测装置还包括连接所述导电线路电路板与所述信号控制器之间的COF绑定面，所述COF绑定面设置在所述导电线路电路板的侧边，所述COF绑定面与所述待检测背板上的COF相贴合。\n\n[0016]根据本发明实施例所提供的LED显示背板检测装置，所述COF绑定面与所述导电线路电路板内的线路一一对应，待检测背板上的各个所述LED发光元件均为单独控制。\n\n[0017]根据本发明实施例所提供的LED显示背板检测装置，所述待检测背板为Mini-LED背板或Micro-LED背板。\n\n[0018]根据本发明实施例所提供的LED显示背板检测装置，在所述LED绑定面内还包括阴阳极引脚，所述阴阳极引脚具有保护层；所述保护层为弹性导电胶，包括导电橡胶或PVC材料。\n\n[0019]根据本发明实施例所提供的LED显示背板检测装置，所述导电线路电路板的材料为PCB或PVC或金属。\n\n[0020]根据本发明实施例所提供的LED显示背板检测装置，所述载台的尺寸大于所述待检测背板的尺寸，所述载台的材料为玻璃或金属或塑胶或石英石。\n\n[0021]本发明实施例还提供一种LED显示背板的检测方法，包括以下步骤：\n\n[0022]将待检测背板放置在载台上，通过基板固定引脚将所述待检测背板固定；\n\n[0023]将所述待检测背板的各个LED发光元件与导电线路电路板上的LED绑定面进行对齐，使所述待检测背板的各个所述LED发光元件的阴阳极引脚与所述LED绑定面内的阴阳极引脚一一对应；\n\n[0024]将所述待检测背板的COF板与COF绑定面对应并压合；\n\n[0025]在信号控制器中输入所需要的电压，点亮所述待检测背板的所述LED发光元件，所述信号控制器根据所述LED发光元件的亮暗程度判断所述待检测背板的品质。\n\n[0026]本发明的有益效果为：本发明实施例所提供的一种LED显示背板检测装置及其检测方法，包括载台，导电线路电路板，LED绑定面，信号控制器等其他部件，载台用于承载待检测背板，所述待检测背板包含多个LED发光元件；所述导电线路电路板设置有多条导电线路，每个所述LED绑定面与所述待检测背板上的所述LED发光元件一一对应连接；所述信号控制器与所述导电线路电路板相连接，所述信号控制器给所述导电线路电路板提供电压。本发明实施例的LED显示背板检测装置及其检测方法通过信号控制器给所述导电线路电路板传输电压信号，所述导电线路电路板给所述待检测背板上的各个所述LED发光元件传输电压并点亮各个所述LED发光元件，根据各个所述LED发光元件的亮暗程度来判定所述待检测背板相对应位置的品质。本发明实施例所提供的一种LED显示背板检测装置及其检测方法，通过改善传统背板光学检测方式，避免了需要人员研判后才能确定缺失是否对点灯有影响，且受制于研判人员的差异及无法直接判定对点灯影响的问题，从而提高判定基板是否满足出货标准效率及准确率；且本实施例所提供的LED显示背板检测装置及其检测方法，使用成本比较低，容易移动，还可以根据不同的LED背板来设计制作不同的检测装置；所述检测方法可以有效的判定不良品，以及确定所述不良品的缺陷点位区域。\n\n附图说明\n\n[0027]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0028]图1为本实施例提供的LED显示背板检测装置结构示意图。\n\n[0029]图2为本实施例提供的LED显示背板检测方法流程示意图。\n\n具体实施方式\n\n[0030]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0031]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0032]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0033]如图1所示，本发明实施例提供了一种LED显示背板检测装置，包括：\n\n[0034]载台10，所述载台10用于放置承载可拆的待检测背板60，所述待检测背板60包含多个LED发光元件601；\n\n[0035]导电线路电路板20，所述导电线路电路板20设置有多条导电线路；\n\n[0036]LED绑定面201，所述LED绑定面201设置在所述导电线路电路板20上，所述导电线路电路板20包含多个所述LED绑定面201，每个所述LED绑定面201均与所述导电线路电路板20内的所述导电线路相连接；每个所述LED绑定面201与所述待检测背板60上的所述LED发光元件601一一对应连接；\n\n[0037]其中，所述导电线路电路板20满足与所述LED绑定面201设计线路一一对应，可以起到单独控制每个所述LED绑定面201的电压信号输出；\n\n[0038]信号控制器30，所述信号控制器30与所述导电线路电路板20相连接，所述信号控制器30给所述导电线路电路板20提供电压；\n\n[0039]其中，所述信号控制器30给所述导电线路电路板20传输电压信号，所述导电线路电路板20给所述待检测背板60上的各个所述LED发光元件601传输电压并点亮各个所述LED发光元件601，根据各个所述LED发光元件601的亮暗程度来判定所述待检测背板60相对应位置的品质。\n\n[0040]所述LED显示背板检测装置还包括基板固定引脚40，所述基板固定引脚40设置在所述载台10的四周，所述基板固定引脚40均匀设置，所述基板固定引脚40用于可拆卸固定所述待检测背板60。所述基板固定引脚40包括至少两个固定脚元件。在本实施例中，所述基板固定引脚40包括8个固定脚元件，各个所述固定脚元件均匀分布在所述载台10的周边，进而所述待检测背板60能够放置在所述载台10上。进一步的，所述基板固定引脚40的材料包括但不限于是PCB、PVC(Polyvinyl chloride，聚氯乙烯)或金属等材料。需要说明的是，所述基板固定引脚40需满足可固定且不易划伤基板。\n\n[0041]所述LED显示背板检测装置还包括连接所述导电线路电路板20与所述信号控制器30之间的COF(Chip On Film，常称覆晶薄膜)绑定面50，所述COF绑定面50设置在所述导电线路电路板20的侧边，所述COF绑定面50与所述待检测背板60上的COF板602相贴合。所述COF绑定面50与所述导电线路电路板20内的线路一一对应，所述待检测背板60上的各个所述LED发光元件601均可以被单独控制。\n\n[0042]其中，所述待检测背板60上的所述COF板602可用来传输电压信号。具体而言，基于所述COF板602连接在所述信号控制器30与所述导电线路电路板20之间，所述信号控制器30可通过所述COF板602向所述导电线路电路板20传输信号，所述导电线路电路板20将电压信号传输至每个所述LED发光元件601，并点亮每个所述LED发光元件601，在根据各个所述LED发光元件601的亮暗程度来判定所述待检测背板60相对应位置的品质。在本实施例中，通过设置所述COF绑定面50，进而方便所述导电线路电路板20与所述信号控制器30之间的连接，简化了检测过程。\n\n[0043]具体地，所述载台10指的是可以用来放置承载所述待检测背板60的一个平台。所述载台10的材料包括但不限于金属、塑料或石英石等其他材料。所述载台10的尺寸大于所述待检测背板60的尺寸，载台10的具体尺寸可根据待检测背板60的尺寸而确定。所述待检测背板60可以卡接在所述载台10上，所述载台10将所述待检测背板60固定住。所述待检测背板60包含多个LED发光元件601，各个所述LED发光元件601可以为矩阵式结构排列或其他结构排列。在本实施例中，所述待检测背板60的所述LED发光元件601为矩阵式结构排列，所述待检测背板60至少包括一行所述LED发光元件601和至少一列所述LED发光元件601。所述LED绑定面201为所述LED发光元件601与所述导电线路电路板20的具体连接面，所述LED绑定面201的排列结构与所述待检测背板60的所述LED发光元件601相同，进一步的所述LED绑定面201与所述待检测背板60的所述LED发光元件601一一对应。\n\n[0044]在本实施例中，所述导电线路电路板20包含的电路板的材料包括但不限于是PCB、PVC、或金属等。所述导电线路电路板20可起到有效固定所述LED绑定面201以及所述LED发光元件601的作用，使得所述LED绑定面201以及所述LED发光元件601在电路板上不易脱落、走位和偏移等。\n\n[0045]具体地，在所述LED绑定面201内还包括阴阳极引脚，所述阴阳极引脚与所述待检测背板60的所述LED发光元件601的阴阳极引脚一一对应连接，并保持接触良好。进一步的，所述LED绑定面201的阴阳极引脚表面设置有弹性导电胶，具有防划伤基板作用。所述LED绑定面201的阴阳极引脚设置有保护层，其中，保护层可以是导电橡胶或PVC等材料，能够满足易导电、不易破损、不易划伤对应的焊盘。\n\n[0046]具体地，在本实施例中，在具体的实际操作中，将所述待检测背板60放置在载台10上，将所述待检测背板60的所述LED发光元件601与所述导电线路电路板20上的所述LED绑定面201进行对标，使所述LED绑定面201的阴阳极引脚与所述LED发光元件601的阴阳极引脚一一对应连接，并且将所述待检测背板60与所述导电线路电路板20准确压合，正常连接接触。所述信号控制器30输入所述待检测背板60所需要的电压，所述导电线路电路板20将电压信号传输至所述LED发光元件601，点亮所述LED发光元件601。\n\n[0047]具体而言，本发明实施例所提供的LED显示背板检测装置，基于所述待检测背板60可拆卸放置在所述载台10上，通过载台10固定所述待检测背板60；将所述待检测背板60的所述LED发光元件601与所述LED绑定面201一一对应连接，将所述信号控制器30与所述导电线路电路板20相连接。进而所述信号传感器30给所述导电线路电路板20传输电压信号，点亮所述LED发光元件601，检测人员可以通过所述LED发光元件601的亮暗程度来判定所述待检测背板60相对应位置的品质；避免了需要人员研判后才能确定缺失是否对点灯有影响，且受制于研判人员的差异及无法直接判定对点灯影响的问题，从而提高判定基板是否满足出货标准效率及准确率；且本实施例所提供的LED显示背板检测装置及其检测方法，使用成本比较低，容易移动，还可以根据不同的LED背板来设计制作不同的检测装置；所述检测方法可以有效的判定不良品，以及确定所述不良品的缺陷点位区域。还达到了提前判定缺陷、简化检测流程、提高背板缺陷检测率。\n\n[0048]在本实施例中，所述待检测背板60为Mini-LED背板或Micro-LED背板。其中，Mini-LED背板可以是AM(Active-matrix主动式)Mini-LED背板。需要说明的是，待检测背板需满足在SMT前裸露出LED元件的连接焊盘(Bondingpad)和COF板的焊盘(Bonding pad)存在，便于显示背板检测设备对应贴合检测。需要说明的是，基于本申请，可根据待检测背板的不同种类，更换对应不同种类的检测电路板，满足不同检测需求。\n\n[0049]如图2所示，为本实施例所提供的一种LED显示背板的检测方法流程示意图。\n\n[0050]参阅图2，在本实施例中，还提供了一种LED显示背板的检测方法，包括以下步骤：\n\n[0051]步骤S1、将待检测背板放置在载台上，通过基板固定引脚将所述待检测背板固定；\n\n[0052]步骤S2、将所述待检测背板的各个LED发光元件与导电线路电路板上的LED绑定面进行对齐，使所述待检测背板的各个所述LED发光元件的阴阳极引脚与所述LED绑定面内的阴阳极引脚一一对应；\n\n[0053]步骤S3、将所述待检测背板的COF板与COF绑定面对应并压合；\n\n[0054]步骤S4、在信号控制器中输入所需要的电压，点亮所述待检测背板的所述LED发光元件，根据所述LED发光元件的亮暗程度判断所述待检测背板的品质质量。\n\n[0055]具体而言，通过将所述待检测背板可拆卸放置在所述载台上，载台固定住所述待检测背板；将所述待检测背板的所述LED发光元件与所述LED绑定面一一对应连接，将所述信号控制器与所述导电线路电路板相连接。进而所述信号传感器给所述导电线路电路板传输电压信号，点亮所述LED发光元件，检测人员可以通过所述LED发光元件的亮暗程度来判定所述待检测背板相对应位置的品质；避免了需要人员研判后才能确定缺失是否对点灯有影响，且受制于研判人员的差异及无法直接判定对点灯影响的问题，从而提高判定基板是否满足出货标准效率及准确率；且本实施例所提供的LED显示背板检测装置及其检测方法，使用成本比较低，容易移动，还可以根据不同的LED背板来设计制作不同的检测装置；所述检测方法可以有效的判定不良品，以及确定所述不良品的缺陷点位区域。还达到了提前判定缺陷、简化检测流程、提高背板缺陷检测率。\n\n[0056]本发明实施例所提供的一种LED显示背板检测装置及其检测方法，包括载台，导电线路电路板，LED绑定面，信号控制器等其他部件，载台用于承载待检测背板，所述待检测背板包含多个LED发光元件；所述导电线路电路板设置有多条导电线路，每个所述LED绑定面与所述待检测背板上的所述LED发光元件一一对应连接；所述信号控制器与所述导电线路电路板相连接，所述信号控制器给所述导电线路电路板提供电压。本发明实施例的LED显示背板检测装置及其检测方法通过信号控制器给所述导电线路电路板传输电压信号，所述导电线路电路板给所述待检测背板上的各个所述LED发光元件传输电压并点亮各个所述LED发光元件，根据各个所述LED发光元件的亮暗程度来判定所述待检测背板相对应位置的品质。本发明实施例所提供的一种LED显示背板检测装置及其检测方法，通过改善传统背板光学检测方式，避免了需要人员研判后才能确定缺失是否对点灯有影响，且受制于研判人员的差异及无法直接判定对点灯影响的问题，从而提高判定基板是否满足出货标准效率及准确率；且本实施例所提供的LED显示背板检测装置及其检测方法，使用成本比较低，容易移动，还可以根据不同的LED背板来设计制作不同的检测装置；所述检测方法可以有效的判定不良品，以及确定所述不良品的缺陷点位区域。\n\n[0057]以上对本申请实施例所提供的一种LED显示背板检测装置及其检测方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10869, 23923, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种显示面板及制备方法。\n\n背景技术\n\n[0002]在显示领域中，无边框或者窄边框显示器逐渐成为主流。对于显示器，例如液晶显示器(Liquid Crystals Display，LCD)、有机电致发光显示器(Organic Light-EmittingDisplay，OLED)、发光二极管(light emitting diode，LED)显示器而言，屏幕尺寸越大，制造难度以及单位面积的制造成本越高。因此，大型显示器通常采用多块中小型显示器拼接而成。中小型显示器的边框的存在会导致拼接显示面板的显示区域出现条形的拼接缝，降低显示品质。\n\n[0003]综上所述，亟需提供一种显示面板及制备方法，以解决上述技术问题。\n\n发明内容\n\n[0004]本申请提供一种显示面板及制备方法，以解决现有的显示面板及制备方法，由于边框的存在会导致拼接显示面板的显示区域出现条形的拼接缝，降低显示品质的技术问题。\n\n[0005]为达到上述目的，本申请实施例采用如下技术方案：\n\n[0006]本申请实施例提供一种显示面板，包括阵列基板，所述阵列基板还包括：衬底基板、发光部、存储电容部、薄膜晶体管阵列部、扇出电路以及驱动芯片；\n\n[0007]其中，所述衬底基板具有第一表面和与所述第一表面相对的第二表面；所述发光部、所述存储电容部以及所述薄膜晶体管阵列部均设置于所述衬底基板的第一表面侧；所述扇出电路设置于所述衬底基板的第二表面，所述扇出电路通过位于所述阵列基板上的电连接部与位于所述薄膜晶体管阵列部侧边缘的第一金属信号线电连接；所述驱动芯片设置于所述衬底基板的第二表面侧，电连接于所述扇出电路；公共电极层、像素电极层、遮光金属层以及源漏极金属层同层设置于所述衬底基板的第一表面，所述发光部绑定于所述公共电极层以及所述像素电极层上。\n\n[0008]在一些实施例中，所述发光部为Micro-LED发光层，所述Micro-LED发光层包括Micro-LED半导体层、连接电极层、第一电极层以及第二电极层，所述第一电极层通过焊接层与所述公共电极层电连接，所述第二电极层通过另一所述焊接层与所述像素电极层电连接。\n\n[0009]在一些实施例中，所述遮光金属层包括位于所述存储电容部的第一遮光金属层以及位于所述薄膜晶体管阵列部的第二遮光金属层；所述栅极金属层包括位于所述存储电容部的第一栅极金属层以及位于所述薄膜晶体管阵列部的第二栅极金属层。\n\n[0010]在一些实施例中，所述存储电容部包括位于所述衬底基板上的所述第一遮光金属层、设置于所述第一遮光金属层上的第一栅极绝缘层、设置于所述第一栅极绝缘层上的所述第一栅极金属层、设置于所述衬底基板上并完全覆盖所述第一栅极金属层的第一钝化层、设置于所述第一钝化层上的第二钝化层以及设置于所述第二钝化层上的黑色矩阵。\n\n[0011]在一些实施例中，所述薄膜晶体管阵列部包括同层设置于所述衬底基板上的所述第二遮光金属层以及所述源漏极金属层、设置于所述衬底基板上并覆盖部分所述第二遮光金属层以及部分所述源漏极金属层的层间绝缘层、设置于所述层间绝缘层上并分别与所述第二遮光金属层以及所述源漏极金属层电连接的有源层、设置于所述有源层上的第二栅极绝缘层、设置于所述第二栅极绝缘层上的所述第二栅极金属层、所述第一钝化层、所述第二钝化层以及所述黑色矩阵\n\n[0012]在一些实施例中，所述公共电极层、所述像素电极层、所述遮光金属层、所述源漏极金属层、所述第一金属电路层、所述第一栅极金属层以及所述第二栅极金属层均选自Mo金属层、Mo/Al/Mo金属层、Mo/Cu金属层、Mo/Cu/IZO金属层、IZO/Cu/IZO金属层、Mo/Cu/ITO金属层、Ni/Cu/Ni金属层、MoTiNi/Cu/MoTiNi金属层、NiCr/Cu/NiCr金属层以及CuNb金属层中的任意一种。\n\n[0013]在一些实施例中，所述扇出电路包括设置于所述衬底基板的第二表面上的第一金属电路层以及设置于所述衬底基板的第二表面上并覆盖部分所述第一金属电路层的第三钝化层，所述扇出电路中的所述第一金属电路层通过异方性导电胶膜与覆晶薄膜的一侧电连接，所述覆晶薄膜的相对另一侧绑定有所述驱动芯片。\n\n[0014]本申请实施例还提供一种如上所述显示面板的制备方法，所述方法包括：\n\n[0015]S10，在一衬底基板上依次制备第一金属电路层、第三钝化层以及硬保护层，所述第一金属电路层由第一金属薄膜经图案化形成，所述第三钝化层形成于所述衬底基板上并部分覆盖所述第一金属电路层，所述硬保护层形成于所述第一金属电路层上并完全覆盖所述第三钝化层；\n\n[0016]S20，将所述衬底基板进行正背面翻转，在远离所述第一金属电路层的一侧镀上所述第一金属薄膜、通过一道光罩将所述第一金属薄膜经图案化后形成第一遮光金属层、第二遮光金属层、源漏极金属层以及第一金属信号线；\n\n[0017]S30，在所述衬底基板远离所述第一金属电路层一侧采用光罩工艺依次形成层间绝缘层、有源层以及栅极绝缘层，所述栅极绝缘层包括间隔设置的第一栅极绝缘层、第二栅极绝缘层以及第三栅极绝缘层；\n\n[0018]S40，在所述衬底基板上镀一层所述第一金属薄膜，以一道光罩将所述第一金属薄膜图案化后形成设置于所述衬底基板上的公共电极层以及像素电极层、设置于所述第一栅极绝缘层上的第一栅极金属层、设置于所述第二栅极绝缘层上的第二栅极金属层以及设置于所述第三栅极绝缘层上的所述第一金属信号线；\n\n[0019]S50，以一道光罩在所述衬底基板上形成图案化的第一钝化层，所述第一钝化层完全覆盖所述第一遮光金属层、所述第一栅极绝缘层、所述第一栅极金属层、所述有源层、所述第二栅极绝缘层以及所述第二栅极金属层，所述第一钝化层还部分覆盖所述层间绝缘层、所述第三栅极绝缘层以及所述第一金属信号线，之后在所述第一钝化层上依次形成第二钝化层和黑色矩阵；\n\n[0020]S60，在所述衬底基板远离所述第一金属电路层一侧涂布软保护层，去除所述硬保护层，在所述衬底基板靠近所述第一金属电路层一侧涂布所述软保护层；\n\n[0021]S70，分别去除位于所述衬底基板两侧的所述软保护层，采用电连接部将位于所述衬底基板一侧的第一金属电路层与位于所述衬底基板相对另一侧的所述第一金属信号线电连接；\n\n[0022]S80，将显示发光单元转移至所述衬底基板并绑定，之后将覆晶薄膜的一侧通过异方性导电胶膜与所述第一金属电路层电连接，所述覆晶薄膜的相对另一侧绑定驱动芯片。\n\n[0023]在一些实施例中，所述S30中，所述层间绝缘层设于所述衬底基板上并部分覆盖所述第二遮光金属层、所述源漏极金属层以及所述第一金属信号线，所述有源层与部分所述第二遮光金属层以及部分所述源漏极金属层相接触。\n\n[0024]在一些实施例中，所述公共电极层、所述像素电极层、所述遮光金属层、所述源漏极金属层、所述第一金属电路层、所述第一金属信号线、所述第一栅极金属层以及所述第二栅极金属层均选自Mo金属层、Mo/Al/Mo金属层、Mo/Cu金属层、Mo/Cu/IZO金属层、IZO/Cu/IZO金属层、Mo/Cu/ITO金属层、Ni/Cu/Ni金属层、MoTiNi/Cu/MoTiNi金属层、NiCr/Cu/NiCr金属层以及CuNb金属层中的任意一种。\n\n[0025]本申请实施例所提供的显示面板及制备方法，将TFT电路与扇出电路分别设置于阵列基板的相对两侧并通过阵列基板边缘的电连接部相连，同时遮光金属层与源漏极金属层共用一层金属薄膜，在使阵列基板结构简单化的同时，能够使显示区域更加靠近边框区，进一步获得无边框或窄边框的效果。\n\n附图说明\n\n[0026]下面结合附图，通过对本申请的具体实施方式进行详细描述。\n\n[0027]图1为本申请实施例提供的显示面板的截面结构示意图。\n\n[0028]图2为本申请实施例提供的显示面板的制备方法的步骤流程图。\n\n[0029]图3A-3H为本申请实施例提供的显示面板的制备方法的结构示意图。\n\n具体实施方式\n\n[0030]本申请提供一种显示面板及制备方法，为使本申请的目的、技术方案及效果更加清楚、明确，以下参照附图并举实施例对本申请进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本申请，并不用于限定本申请。\n\n[0031]本申请实施例针对现有的显示面板及制备方法，由于边框的存在会导致拼接显示面板的显示区域出现条形的拼接缝，降低显示品质的技术问题，本实施例能够解决该缺陷。\n\n[0032]如图1所示，为本申请实施例提供的显示面板的截面结构示意图。所述显示面板包括阵列基板，所述阵列基板还包括：衬底基板101、发光部40、存储电容部(Cst)、薄膜晶体管阵列部(TFT)、扇出电路(fanout)以及驱动芯片(IC)50；\n\n[0033]其中，所述衬底基板101具有第一表面和与所述第一表面相对的第二表面；所述发光部40、所述存储电容部(Cst)以及所述薄膜晶体管阵列部(TFT)均设置于所述衬底基板101的第一表面侧；所述扇出电路(fanout)设置于所述衬底基板101的第二表面，所述扇出电路(fanout)通过位于所述阵列基板101上的电连接部301与位于所述薄膜晶体管阵列部(TFT)侧边缘的第一金属信号线1044电连接；所述驱动芯片(IC)50设置于所述衬底基板101的第二表面侧，电连接于所述扇出电路(fanout)；公共电极层1081、像素电极层1082、遮光金属层以及源漏极金属层1043同层设置于所述衬底基板101的第一表面，所述发光部40绑定于所述公共电极层1081以及所述像素电极层1082上。\n\n[0034]进一步地，所述遮光金属层包括位于所述存储电容部(Cst)的第一遮光金属层1041以及位于所述薄膜晶体管阵列部(TFT)的第二遮光金属层1042；所述第一遮光金属层1041用于充当所述存储电容部(Cst)的电极板，所述第二遮光金属层1042用于对所述薄膜晶体管阵列部(TFT)的沟道进行遮光，所述遮光金属层可以是具有遮光效果的金属。\n\n[0035]具体地，所述存储电容部(Cst)包括位于所述衬底基板101上的所述第一遮光金属层1041、设置于所述第一遮光金属层1041上的第一栅极绝缘层1071、设置于所述第一栅极绝缘层1071上的第一栅极金属层1083、设置于所述衬底基板101上并完全覆盖所述第一栅极金属层1083的第一钝化层109、设置于所述第一钝化层109上的第二钝化层110以及设置于所述第二钝化层110上的黑色矩阵111。\n\n[0036]具体地，所述薄膜晶体管阵列部(TFT)包括同层设置于所述衬底基板101上的所述第二遮光金属层1042以及所述源漏极金属层1043、设置于所述衬底基板101上并覆盖部分所述第二遮光金属层1042以及部分所述源漏极金属层1043的层间绝缘层105、设置于所述层间绝缘层105上并分别与所述第二遮光金属层1042以及所述源漏极金属层1043电连接的有源层106、设置于所述有源层106上的第二栅极绝缘层1072、设置于所述第二栅极绝缘层1072上的所述第二栅极金属层1084、所述第一钝化层109、所述第二钝化层110以及所述黑色矩阵111。\n\n[0037]具体地，所述扇出电路包括设置于所述衬底基板101的第二表面上的第一金属电路层102以及设置于所述衬底基板101的第二表面上并覆盖部分所述第一金属电路层102的第三钝化层103，所述扇出电路中的所述第一金属电路层102通过异方性导电胶膜(ACF)112与覆晶薄膜(COF)113的一侧电连接，所述覆晶薄膜(COF)的相对另一侧绑定有所述驱动芯片50。\n\n[0038]具体地，所述发光部40为Micro-LED(微型发光二极管)发光层，所述Micro-LED发光层包括Micro-LED半导体层401、连接电极层402、第一电极层403以及第二电极层404，所述第一电极层403通过焊接层405与所述公共电极层1081电连接，所述第二电极层404通过另一所述焊接层405与所述像素电极层1082电连接。\n\n[0039]进一步地，所述阵列基板还包括位于所述薄膜晶体管阵列部(TFT)侧边缘的第三栅极绝缘层1073，所述第三栅极绝缘层1073设置于所述层间绝缘层105与所述第一金属信号线1044之间。\n\n[0040]具体地，所述公共电极层1081、所述像素电极层1082、所述遮光金属层、所述源漏极金属层1043、第一金属电路层102、所述第一栅极金属层1083以及所述第二栅极金属层1084均选自Mo金属层、Mo/Al/Mo金属层、Mo/Cu金属层、Mo/Cu/IZO金属层、IZO/Cu/IZO金属层、Mo/Cu/ITO金属层、Ni/Cu/Ni金属层、MoTiNi/Cu/MoTiNi金属层、NiCr/Cu/NiCr金属层以及CuNb金属层中的任意一种。\n\n[0041]进一步地，所述衬底基板101用于支撑所述阵列基板上的其他元件。所述衬底基板101例如可以为塑料基板或者玻璃基板。在本申请一实施方式中，所述衬底基板101可以是柔性基板，例如聚酰亚胺基板。\n\n[0042]进一步地，所述层间绝缘层105可以采用例如SiOx、SiNx和SiOx的层叠体等。所述第一栅极绝缘层1071、所述第二栅极绝缘层1072以及所述第三栅极绝缘层1073可以采用SiNx、SiOx、AlOx、SiNx和SiOx的层叠体或者AlOx和SiOx的层叠体等。\n\n[0043]进一步地，所述有源层106可以采用氧化物半导体材料，例如，铟锌氧化物(IZO)、镓铟氧化物(IGO)、铟镓锌氧化物(IGZO)、铟镓锡氧化物(IGTO)、铟镓锌锡氧化物(IGZTO)等。所述有源层106也可以采用例如，非晶硅、单晶硅、低温多晶硅等。\n\n[0044]进一步地，所述第一钝化层109、所述第二钝化层110以及所述第三钝化层103用于使所述阵列基板平坦化。其可以采用上述绝缘层相同的材料。例如，SiOx、SiNx和SiOx的层叠体等。\n\n[0045]进一步地，所述像素电极1082和公共电极1081用于对所述发光部40供电，控制所述发光部40的发光。所述像素电极1082连接于所述源漏极金属层1043，所述公共电极1081被提供一个公共电压。\n\n[0046]如图2所示，本申请实施例还提供一种如上所述显示面板的制备方法，所述方法具体包括：\n\n[0047]S10，在一衬底基板101上依次制备第一金属电路层102、第三钝化层103以及硬保护层201，所述第一金属电路层101由第一金属薄膜经图案化形成，所述第三钝化层103形成于所述衬底基板101上并部分覆盖所述第一金属电路层102，所述硬保护层201形成于所述第一金属电路层102上并完全覆盖所述第三钝化层103。\n\n[0048]具体地，所述S10还包括：\n\n[0049]首先，提供一衬底基板101，在所述衬底基板101上沉积一层第一金属薄膜，通过光罩工艺将所述第一金属薄膜经图案化后形成第一金属电路层102；之后，在所述衬底基板101上沉积第一层无机绝缘膜，所述无机绝缘膜经图案化后形成第三钝化层103，所述第三钝化层103部分覆盖所述第一金属电路层102；最后，在所述第三钝化层103上沉积形成硬保护层(protective layer B)201。优选地，所述衬底基板101例如可以为塑料基板或者玻璃基板。在本申请一实施方式中，所述衬底基板101可以是柔性基板，例如聚酰亚胺基板。所述第三钝化层103以及所述硬保护层(protective layer B)201的材料优选为SiNx或SiOx。优选地，所述第一金属薄膜选自Mo金属层、Mo/Al/Mo金属层、Mo/Cu金属层、Mo/Cu/IZO金属层、IZO/Cu/IZO金属层、Mo/Cu/ITO金属层、Ni/Cu/Ni金属层、MoTiNi/Cu/MoTiNi金属层、NiCr/Cu/NiCr金属层以及CuNb金属层中的任意一种，如图3A所示。\n\n[0050]S20，将所述衬底基板101进行正背面翻转，在远离所述第一金属电路层102的一侧镀上所述第一金属薄膜、通过一道光罩将所述第一金属薄膜经图案化后形成第一遮光金属层1041、第二遮光金属层1042、源漏极金属层1043以及第一金属信号线1044。\n\n[0051]具体地，所述S20还包括：\n\n[0052]首先，将所述衬底基板101进行正背面翻转。之后，在远离所述第一金属电路层102的一侧镀上所述第一金属薄膜、通过一道光罩将所述第一金属薄膜经图案化后形成第一遮光金属层1041、第二遮光金属层1042、源漏极金属层1043以及第一金属信号线1044；优选地，所述第一遮光金属层1041用于充当存储电容部(Cst)的电极板，所述第二遮光金属层1042用于对薄膜晶体管阵列部(TFT)的沟道进行遮光，所述遮光金属层可以是具有遮光效果的金属，如图3B所示。\n\n[0053]S30，在所述衬底基板101远离所述第一金属电路层102一侧采用光罩工艺依次形成层间绝缘层105、有源层106以及栅极绝缘层，所述栅极绝缘层包括间隔设置的第一栅极绝缘层1071、第二栅极绝缘层1082以及第三栅极绝缘层1073。\n\n[0054]具体地，所述S30还包括：\n\n[0055]首先，在所述衬底基板101远离所述第一金属电路层102一侧沉积第二层无机绝缘膜，所述无机绝缘膜通过一道光罩经图案化后形成层间绝缘层105，所述层间绝缘层105覆盖部分所述第二遮光金属层1042以及部分所述源漏极金属层1043，且完全覆盖所述第一金属信号线1044，所述层间绝缘层105的材料可以优选为SiOx或SiNx或SiNx/SiOx或SiNOx等。之后，在层间绝缘层105上沉积一层半导体薄膜，所述半导体薄膜通过一道光罩经图案化后形成有源层106，所述有源层106与所述第二遮光金属层1042以及所述源漏极金属层1043相连接，所述有源层106可以采用氧化物半导体材料，例如，铟锌氧化物(IZO)、镓铟氧化物(IGO)、铟镓锌氧化物(IGZO)、铟镓锡氧化物(IGTO)、铟镓锌锡氧化物(IGZTO)等。所述有源层106也可以采用例如，非晶硅、单晶硅、低温多晶硅等。最后，在所述第一遮光金属层1041、所述有源层106以及部分所述层间绝缘层105上沉积第三层无机绝缘膜，所述无机绝缘膜通过一道光罩经图案化后形成间隔设置的第一栅极绝缘层1071、第二栅极绝缘层1072以及第三栅极绝缘层1073，所述第一栅极绝缘层1071、所述第二栅极绝缘层1072以及所述第三栅极绝缘层1073膜层材料可为SiOx，SiNx，Al2O3/SiNx/SiOx，SiOx/SiNx/SiOx等，如图3C所示。\n\n[0056]S40，在所述衬底基板101上镀一层所述第一金属薄膜，以一道光罩将所述第一金属薄膜图案化后形成设置于所述衬底基板101上的公共电极层1081以及像素电极层1082、设置于所述第一栅极绝缘层1071上的第一栅极金属层1083、设置于所述第二栅极绝缘层1072上的第二栅极金属层1084以及设置于所述第三栅极绝缘层1073上的所述第一金属信号线1044。\n\n[0057]具体地，所述S40还包括：\n\n[0058]在所述衬底基板101上镀一层所述第一金属薄膜，以一道光罩将所述第一金属薄膜图案化后形成设置于所述衬底基板101上的公共电极层1081以及像素电极层1082、设置于所述第一栅极绝缘层1071上的第一栅极金属层1083、设置于所述第二栅极绝缘层1072上的第二栅极金属层1084以及设置于所述第三栅极绝缘层1073上的所述第一金属信号线1044，如图3D所示。\n\n[0059]S50，以一道光罩在所述衬底基板101上形成图案化的第一钝化层109，所述第一钝化层109完全覆盖所述第一遮光金属层1041、所述第一栅极绝缘层1071、所述第一栅极金属层1083、所述有源层106、所述第二栅极绝缘层1072以及所述第二栅极金属层1084，所述第一钝化层109还部分覆盖所述层间绝缘层105、所述第三栅极绝缘层1073以及所述第一金属信号线1044，之后在所述第一钝化层109上依次形成第二钝化层110和黑色矩阵111。\n\n[0060]具体地，所述S50还包括：\n\n[0061]首先，在所述衬底基板101正面沉积第四层无机绝缘薄膜，所述无机绝缘薄膜经光罩工艺后图案化为第一钝化层109，所述第一钝化层109完全覆盖所述第一遮光金属层1041、所述第一栅极绝缘层1071、所述第一栅极金属层1083、所述有源层106、所述第二栅极绝缘层1072以及所述第二栅极金属层1084，所述第一钝化层109还部分覆盖所述层间绝缘层105、所述第三栅极绝缘层1073以及所述第一金属信号线1044，所述第一钝化层109的膜层材料优选为SiOx，SiNx以及SiNOx中的任意一种；之后，在所述第一钝化层109上沉积形成第二钝化层110，所述第二钝化层110的膜层材料优选为SiNx以及SiNOx中的任意一种；最后，在所述第二钝化层110上制作黑色矩阵图案，形成黑色矩阵111，利用所述黑色矩阵111图层通过硬掩模工艺(Hard Mask)对所述第一钝化层109以及所述第二钝化层110进行自对准图案化处理，如图3E所示。\n\n[0062]S60，在所述衬底基板101远离所述第一金属电路层102一侧涂布软保护层202，去除所述硬保护层201，在所述衬底基板101靠近所述第一金属电路层102一侧涂布所述软保护层202。\n\n[0063]首先，在所述衬底基板101远离所述第一金属电路层102一侧(TFT电路侧)涂布软保护层202；之后去除所述衬底基板101靠近所述第一金属电路层102一侧(背面电路侧)的所述硬保护层201，并对背面电路侧涂布所述软保护层202，如图3F所示。\n\n[0064]S70，分别去除位于所述衬底基板101两侧的所述软保护层202，采用电连接部301将位于所述衬底基板101一侧的第一金属电路层102与位于所述衬底基板101相对另一侧的所述第一金属信号线1044电连接。\n\n[0065]首先，分别撕掉位于所述衬底基板101两侧的所述软保护层202，采用电连接部301将位于所述衬底基板一侧的第一金属电路层102与位于所述衬底基板101相对另一侧的所述第一金属信号线1044电连接；其中，所述电连接部301的材料为导电金属，如图3G所示。\n\n[0066]S80，将显示发光单元转移至所述衬底基板101并绑定，之后将覆晶薄膜113的一侧通过异方性导电胶膜112与所述第一金属电路层20电连接，所述覆晶薄膜113的相对另一侧绑定驱动芯片50。\n\n[0067]首先，将显示发光单元转移至所述衬底基板101上；之后，将所述显示发光单元与所述衬底基板101上的所述公共电极1081与所述像素电极1082绑定；最后，将覆晶薄膜(COF)113的一侧通过异方性导电胶膜(ACF)112与所述第一金属电路层20电连接，所述覆晶薄膜113的相对另一侧绑定驱动芯片(IC)50。其中，所述显示发光单元优选为Micro-LED发光层40，所述Micro-LED发光层40包括Micro-LED半导体层401、连接电极层402、第一电极层403以及第二电极层404，所述第一电极层403通过焊接层405与所述公共电极层1081电连接，所述第二电极层404通过另一所述焊接层405与所述像素电极层1082电连接，如图3H所示。\n\n[0068]本申请提出一种显示面板及其制备方法，主要方案为把显示面板的扇出电路(fanout)制作在显示面板衬底的背面，使得显示像素区域可以最大程度的靠近显示边框，达到无边框效果，拼接缝达到一个像素单元水平，在宏观上无明显的拼接痕迹。在显示发光单元优选为Micro-LED(微型发光二极管)或OLED(有机发光二极管)等主动发光显示基板上，显示面板的正面可以用于显示，而背面制作扇出电路(fanout)，扇出电路(fanout)与显示像素通过显示基板旁边的电连接部(side wiring)连接。在TFT(薄膜晶体管)层面，主要涉及Micro-LED的阵列基板的结构简化，降低制作步骤，提升制作效率。本申请相比于现有技术吗，具有以下几个优势：\n\n[0069]1、遮光金属层与源漏极金属层共用一层金属薄膜，Micro-LED(微型发光二极管)绑定于栅极金属层上(公共电极以及像素电极分别与栅极金属层同材质)；\n\n[0070]2、存储电容Cst采用LS/GI/GE(遮光金属层/栅极绝缘层/栅极金属层)叠层结构形成电容，由于电容区的层间绝缘层被刻蚀，栅极绝缘层厚度较薄，因此可形成较大MIM(金属-绝缘体-金属)结构电容，有利于提高像素密度；\n\n[0071]3、薄膜晶体管阵列部(Array)走线布局上，由于栅极金属层与源漏极金属层中间间隔栅极绝缘层以及层间绝缘层(GI+ILD)，膜层厚度较大，相比传统结构有利于降低寄生电容，减少信号阻容阻抗延迟效应(RC delay)；\n\n[0072]4、正面只需要6道光罩工艺(Mask)，结构简单化。\n\n[0073]综上所述，本申请实施例所提供的显示面板及制备方法，将TFT电路与扇出电路分别设置于阵列基板的相对两侧并通过阵列基板边缘的电连接部相连，同时遮光金属层与源漏极金属层共用一层金属薄膜，在使阵列基板结构简单化的同时，能够使显示区域更加靠近边框区，进一步获得无边框或窄边框的效果。\n\n[0074]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0075]以上对本申请实施例所提供的一种显示面板及制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种显示面板及制备方法。\n\n背景技术\n\n[0002]在显示领域中，无边框或者窄边框显示器逐渐成为主流。对于显示器，例如液晶显示器(Liquid Crystals Display，LCD)、有机电致发光显示器(Organic Light-EmittingDisplay，OLED)、发光二极管(light emitting diode，LED)显示器而言，屏幕尺寸越大，制造难度以及单位面积的制造成本越高。因此，大型显示器通常采用多块中小型显示器拼接而成。中小型显示器的边框的存在会导致拼接显示面板的显示区域出现条形的拼接缝，降低显示品质。\n\n[0003]综上所述，亟需提供一种显示面板及制备方法，以解决上述技术问题。\n\n发明内容\n\n[0004]本申请提供一种显示面板及制备方法，以解决现有的显示面板及制备方法，由于边框的存在会导致拼接显示面板的显示区域出现条形的拼接缝，降低显示品质的技术问题。\n\n[0005]为达到上述目的，本申请实施例采用如下技术方案：\n\n[0006]本申请实施例提供一种显示面板，包括阵列基板，所述阵列基板还包括：衬底基板、发光部、存储电容部、薄膜晶体管阵列部、扇出电路以及驱动芯片；\n\n[0007]其中，所述衬底基板具有第一表面和与所述第一表面相对的第二表面；所述发光部、所述存储电容部以及所述薄膜晶体管阵列部均设置于所述衬底基板的第一表面侧；所述扇出电路设置于所述衬底基板的第二表面，所述扇出电路通过位于所述阵列基板上的电连接部与位于所述薄膜晶体管阵列部侧边缘的第一金属信号线电连接；所述驱动芯片设置于所述衬底基板的第二表面侧，电连接于所述扇出电路；公共电极层、像素电极层、遮光金属层以及源漏极金属层同层设置于所述衬底基板的第一表面，所述发光部绑定于所述公共电极层以及所述像素电极层上。\n\n[0008]在一些实施例中，所述发光部为Micro-LED发光层，所述Micro-LED发光层包括Micro-LED半导体层、连接电极层、第一电极层以及第二电极层，所述第一电极层通过焊接层与所述公共电极层电连接，所述第二电极层通过另一所述焊接层与所述像素电极层电连接。\n\n[0009]在一些实施例中，所述遮光金属层包括位于所述存储电容部的第一遮光金属层以及位于所述薄膜晶体管阵列部的第二遮光金属层；所述栅极金属层包括位于所述存储电容部的第一栅极金属层以及位于所述薄膜晶体管阵列部的第二栅极金属层。\n\n[0010]在一些实施例中，所述存储电容部包括位于所述衬底基板上的所述第一遮光金属层、设置于所述第一遮光金属层上的第一栅极绝缘层、设置于所述第一栅极绝缘层上的所述第一栅极金属层、设置于所述衬底基板上并完全覆盖所述第一栅极金属层的第一钝化层、设置于所述第一钝化层上的第二钝化层以及设置于所述第二钝化层上的黑色矩阵。\n\n[0011]在一些实施例中，所述薄膜晶体管阵列部包括同层设置于所述衬底基板上的所述第二遮光金属层以及所述源漏极金属层、设置于所述衬底基板上并覆盖部分所述第二遮光金属层以及部分所述源漏极金属层的层间绝缘层、设置于所述层间绝缘层上并分别与所述第二遮光金属层以及所述源漏极金属层电连接的有源层、设置于所述有源层上的第二栅极绝缘层、设置于所述第二栅极绝缘层上的所述第二栅极金属层、所述第一钝化层、所述第二钝化层以及所述黑色矩阵\n\n[0012]在一些实施例中，所述公共电极层、所述像素电极层、所述遮光金属层、所述源漏极金属层、所述第一金属电路层、所述第一栅极金属层以及所述第二栅极金属层均选自Mo金属层、Mo/Al/Mo金属层、Mo/Cu金属层、Mo/Cu/IZO金属层、IZO/Cu/IZO金属层、Mo/Cu/ITO金属层、Ni/Cu/Ni金属层、MoTiNi/Cu/MoTiNi金属层、NiCr/Cu/NiCr金属层以及CuNb金属层中的任意一种。\n\n[0013]在一些实施例中，所述扇出电路包括设置于所述衬底基板的第二表面上的第一金属电路层以及设置于所述衬底基板的第二表面上并覆盖部分所述第一金属电路层的第三钝化层，所述扇出电路中的所述第一金属电路层通过异方性导电胶膜与覆晶薄膜的一侧电连接，所述覆晶薄膜的相对另一侧绑定有所述驱动芯片。\n\n[0014]本申请实施例还提供一种如上所述显示面板的制备方法，所述方法包括：\n\n[0015]S10，在一衬底基板上依次制备第一金属电路层、第三钝化层以及硬保护层，所述第一金属电路层由第一金属薄膜经图案化形成，所述第三钝化层形成于所述衬底基板上并部分覆盖所述第一金属电路层，所述硬保护层形成于所述第一金属电路层上并完全覆盖所述第三钝化层；\n\n[0016]S20，将所述衬底基板进行正背面翻转，在远离所述第一金属电路层的一侧镀上所述第一金属薄膜、通过一道光罩将所述第一金属薄膜经图案化后形成第一遮光金属层、第二遮光金属层、源漏极金属层以及第一金属信号线；\n\n[0017]S30，在所述衬底基板远离所述第一金属电路层一侧采用光罩工艺依次形成层间绝缘层、有源层以及栅极绝缘层，所述栅极绝缘层包括间隔设置的第一栅极绝缘层、第二栅极绝缘层以及第三栅极绝缘层；\n\n[0018]S40，在所述衬底基板上镀一层所述第一金属薄膜，以一道光罩将所述第一金属薄膜图案化后形成设置于所述衬底基板上的公共电极层以及像素电极层、设置于所述第一栅极绝缘层上的第一栅极金属层、设置于所述第二栅极绝缘层上的第二栅极金属层以及设置于所述第三栅极绝缘层上的所述第一金属信号线；\n\n[0019]S50，以一道光罩在所述衬底基板上形成图案化的第一钝化层，所述第一钝化层完全覆盖所述第一遮光金属层、所述第一栅极绝缘层、所述第一栅极金属层、所述有源层、所述第二栅极绝缘层以及所述第二栅极金属层，所述第一钝化层还部分覆盖所述层间绝缘层、所述第三栅极绝缘层以及所述第一金属信号线，之后在所述第一钝化层上依次形成第二钝化层和黑色矩阵；\n\n[0020]S60，在所述衬底基板远离所述第一金属电路层一侧涂布软保护层，去除所述硬保护层，在所述衬底基板靠近所述第一金属电路层一侧涂布所述软保护层；\n\n[0021]S70，分别去除位于所述衬底基板两侧的所述软保护层，采用电连接部将位于所述衬底基板一侧的第一金属电路层与位于所述衬底基板相对另一侧的所述第一金属信号线电连接；\n\n[0022]S80，将显示发光单元转移至所述衬底基板并绑定，之后将覆晶薄膜的一侧通过异方性导电胶膜与所述第一金属电路层电连接，所述覆晶薄膜的相对另一侧绑定驱动芯片。\n\n[0023]在一些实施例中，所述S30中，所述层间绝缘层设于所述衬底基板上并部分覆盖所述第二遮光金属层、所述源漏极金属层以及所述第一金属信号线，所述有源层与部分所述第二遮光金属层以及部分所述源漏极金属层相接触。\n\n[0024]在一些实施例中，所述公共电极层、所述像素电极层、所述遮光金属层、所述源漏极金属层、所述第一金属电路层、所述第一金属信号线、所述第一栅极金属层以及所述第二栅极金属层均选自Mo金属层、Mo/Al/Mo金属层、Mo/Cu金属层、Mo/Cu/IZO金属层、IZO/Cu/IZO金属层、Mo/Cu/ITO金属层、Ni/Cu/Ni金属层、MoTiNi/Cu/MoTiNi金属层、NiCr/Cu/NiCr金属层以及CuNb金属层中的任意一种。\n\n[0025]本申请实施例所提供的显示面板及制备方法，将TFT电路与扇出电路分别设置于阵列基板的相对两侧并通过阵列基板边缘的电连接部相连，同时遮光金属层与源漏极金属层共用一层金属薄膜，在使阵列基板结构简单化的同时，能够使显示区域更加靠近边框区，进一步获得无边框或窄边框的效果。\n\n附图说明\n\n[0026]下面结合附图，通过对本申请的具体实施方式进行详细描述。\n\n[0027]图1为本申请实施例提供的显示面板的截面结构示意图。\n\n[0028]图2为本申请实施例提供的显示面板的制备方法的步骤流程图。\n\n[0029]图3A-3H为本申请实施例提供的显示面板的制备方法的结构示意图。\n\n具体实施方式\n\n[0030]本申请提供一种显示面板及制备方法，为使本申请的目的、技术方案及效果更加清楚、明确，以下参照附图并举实施例对本申请进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本申请，并不用于限定本申请。\n\n[0031]本申请实施例针对现有的显示面板及制备方法，由于边框的存在会导致拼接显示面板的显示区域出现条形的拼接缝，降低显示品质的技术问题，本实施例能够解决该缺陷。\n\n[0032]如图1所示，为本申请实施例提供的显示面板的截面结构示意图。所述显示面板包括阵列基板，所述阵列基板还包括：衬底基板101、发光部40、存储电容部(Cst)、薄膜晶体管阵列部(TFT)、扇出电路(fanout)以及驱动芯片(IC)50；\n\n[0033]其中，所述衬底基板101具有第一表面和与所述第一表面相对的第二表面；所述发光部40、所述存储电容部(Cst)以及所述薄膜晶体管阵列部(TFT)均设置于所述衬底基板101的第一表面侧；所述扇出电路(fanout)设置于所述衬底基板101的第二表面，所述扇出电路(fanout)通过位于所述阵列基板101上的电连接部301与位于所述薄膜晶体管阵列部(TFT)侧边缘的第一金属信号线1044电连接；所述驱动芯片(IC)50设置于所述衬底基板101的第二表面侧，电连接于所述扇出电路(fanout)；公共电极层1081、像素电极层1082、遮光金属层以及源漏极金属层1043同层设置于所述衬底基板101的第一表面，所述发光部40绑定于所述公共电极层1081以及所述像素电极层1082上。\n\n[0034]进一步地，所述遮光金属层包括位于所述存储电容部(Cst)的第一遮光金属层1041以及位于所述薄膜晶体管阵列部(TFT)的第二遮光金属层1042；所述第一遮光金属层1041用于充当所述存储电容部(Cst)的电极板，所述第二遮光金属层1042用于对所述薄膜晶体管阵列部(TFT)的沟道进行遮光，所述遮光金属层可以是具有遮光效果的金属。\n\n[0035]具体地，所述存储电容部(Cst)包括位于所述衬底基板101上的所述第一遮光金属层1041、设置于所述第一遮光金属层1041上的第一栅极绝缘层1071、设置于所述第一栅极绝缘层1071上的第一栅极金属层1083、设置于所述衬底基板101上并完全覆盖所述第一栅极金属层1083的第一钝化层109、设置于所述第一钝化层109上的第二钝化层110以及设置于所述第二钝化层110上的黑色矩阵111。\n\n[0036]具体地，所述薄膜晶体管阵列部(TFT)包括同层设置于所述衬底基板101上的所述第二遮光金属层1042以及所述源漏极金属层1043、设置于所述衬底基板101上并覆盖部分所述第二遮光金属层1042以及部分所述源漏极金属层1043的层间绝缘层105、设置于所述层间绝缘层105上并分别与所述第二遮光金属层1042以及所述源漏极金属层1043电连接的有源层106、设置于所述有源层106上的第二栅极绝缘层1072、设置于所述第二栅极绝缘层1072上的所述第二栅极金属层1084、所述第一钝化层109、所述第二钝化层110以及所述黑色矩阵111。\n\n[0037]具体地，所述扇出电路包括设置于所述衬底基板101的第二表面上的第一金属电路层102以及设置于所述衬底基板101的第二表面上并覆盖部分所述第一金属电路层102的第三钝化层103，所述扇出电路中的所述第一金属电路层102通过异方性导电胶膜(ACF)112与覆晶薄膜(COF)113的一侧电连接，所述覆晶薄膜(COF)的相对另一侧绑定有所述驱动芯片50。\n\n[0038]具体地，所述发光部40为Micro-LED(微型发光二极管)发光层，所述Micro-LED发光层包括Micro-LED半导体层401、连接电极层402、第一电极层403以及第二电极层404，所述第一电极层403通过焊接层405与所述公共电极层1081电连接，所述第二电极层404通过另一所述焊接层405与所述像素电极层1082电连接。\n\n[0039]进一步地，所述阵列基板还包括位于所述薄膜晶体管阵列部(TFT)侧边缘的第三栅极绝缘层1073，所述第三栅极绝缘层1073设置于所述层间绝缘层105与所述第一金属信号线1044之间。\n\n[0040]具体地，所述公共电极层1081、所述像素电极层1082、所述遮光金属层、所述源漏极金属层1043、第一金属电路层102、所述第一栅极金属层1083以及所述第二栅极金属层1084均选自Mo金属层、Mo/Al/Mo金属层、Mo/Cu金属层、Mo/Cu/IZO金属层、IZO/Cu/IZO金属层、Mo/Cu/ITO金属层、Ni/Cu/Ni金属层、MoTiNi/Cu/MoTiNi金属层、NiCr/Cu/NiCr金属层以及CuNb金属层中的任意一种。\n\n[0041]进一步地，所述衬底基板101用于支撑所述阵列基板上的其他元件。所述衬底基板101例如可以为塑料基板或者玻璃基板。在本申请一实施方式中，所述衬底基板101可以是柔性基板，例如聚酰亚胺基板。\n\n[0042]进一步地，所述层间绝缘层105可以采用例如SiOx、SiNx和SiOx的层叠体等。所述第一栅极绝缘层1071、所述第二栅极绝缘层1072以及所述第三栅极绝缘层1073可以采用SiNx、SiOx、AlOx、SiNx和SiOx的层叠体或者AlOx和SiOx的层叠体等。\n\n[0043]进一步地，所述有源层106可以采用氧化物半导体材料，例如，铟锌氧化物(IZO)、镓铟氧化物(IGO)、铟镓锌氧化物(IGZO)、铟镓锡氧化物(IGTO)、铟镓锌锡氧化物(IGZTO)等。所述有源层106也可以采用例如，非晶硅、单晶硅、低温多晶硅等。\n\n[0044]进一步地，所述第一钝化层109、所述第二钝化层110以及所述第三钝化层103用于使所述阵列基板平坦化。其可以采用上述绝缘层相同的材料。例如，SiOx、SiNx和SiOx的层叠体等。\n\n[0045]进一步地，所述像素电极1082和公共电极1081用于对所述发光部40供电，控制所述发光部40的发光。所述像素电极1082连接于所述源漏极金属层1043，所述公共电极1081被提供一个公共电压。\n\n[0046]如图2所示，本申请实施例还提供一种如上所述显示面板的制备方法，所述方法具体包括：\n\n[0047]S10，在一衬底基板101上依次制备第一金属电路层102、第三钝化层103以及硬保护层201，所述第一金属电路层101由第一金属薄膜经图案化形成，所述第三钝化层103形成于所述衬底基板101上并部分覆盖所述第一金属电路层102，所述硬保护层201形成于所述第一金属电路层102上并完全覆盖所述第三钝化层103。\n\n[0048]具体地，所述S10还包括：\n\n[0049]首先，提供一衬底基板101，在所述衬底基板101上沉积一层第一金属薄膜，通过光罩工艺将所述第一金属薄膜经图案化后形成第一金属电路层102；之后，在所述衬底基板101上沉积第一层无机绝缘膜，所述无机绝缘膜经图案化后形成第三钝化层103，所述第三钝化层103部分覆盖所述第一金属电路层102；最后，在所述第三钝化层103上沉积形成硬保护层(protective layer B)201。优选地，所述衬底基板101例如可以为塑料基板或者玻璃基板。在本申请一实施方式中，所述衬底基板101可以是柔性基板，例如聚酰亚胺基板。所述第三钝化层103以及所述硬保护层(protective layer B)201的材料优选为SiNx或SiOx。优选地，所述第一金属薄膜选自Mo金属层、Mo/Al/Mo金属层、Mo/Cu金属层、Mo/Cu/IZO金属层、IZO/Cu/IZO金属层、Mo/Cu/ITO金属层、Ni/Cu/Ni金属层、MoTiNi/Cu/MoTiNi金属层、NiCr/Cu/NiCr金属层以及CuNb金属层中的任意一种，如图3A所示。\n\n[0050]S20，将所述衬底基板101进行正背面翻转，在远离所述第一金属电路层102的一侧镀上所述第一金属薄膜、通过一道光罩将所述第一金属薄膜经图案化后形成第一遮光金属层1041、第二遮光金属层1042、源漏极金属层1043以及第一金属信号线1044。\n\n[0051]具体地，所述S20还包括：\n\n[0052]首先，将所述衬底基板101进行正背面翻转。之后，在远离所述第一金属电路层102的一侧镀上所述第一金属薄膜、通过一道光罩将所述第一金属薄膜经图案化后形成第一遮光金属层1041、第二遮光金属层1042、源漏极金属层1043以及第一金属信号线1044；优选地，所述第一遮光金属层1041用于充当存储电容部(Cst)的电极板，所述第二遮光金属层1042用于对薄膜晶体管阵列部(TFT)的沟道进行遮光，所述遮光金属层可以是具有遮光效果的金属，如图3B所示。\n\n[0053]S30，在所述衬底基板101远离所述第一金属电路层102一侧采用光罩工艺依次形成层间绝缘层105、有源层106以及栅极绝缘层，所述栅极绝缘层包括间隔设置的第一栅极绝缘层1071、第二栅极绝缘层1082以及第三栅极绝缘层1073。\n\n[0054]具体地，所述S30还包括：\n\n[0055]首先，在所述衬底基板101远离所述第一金属电路层102一侧沉积第二层无机绝缘膜，所述无机绝缘膜通过一道光罩经图案化后形成层间绝缘层105，所述层间绝缘层105覆盖部分所述第二遮光金属层1042以及部分所述源漏极金属层1043，且完全覆盖所述第一金属信号线1044，所述层间绝缘层105的材料可以优选为SiOx或SiNx或SiNx/SiOx或SiNOx等。之后，在层间绝缘层105上沉积一层半导体薄膜，所述半导体薄膜通过一道光罩经图案化后形成有源层106，所述有源层106与所述第二遮光金属层1042以及所述源漏极金属层1043相连接，所述有源层106可以采用氧化物半导体材料，例如，铟锌氧化物(IZO)、镓铟氧化物(IGO)、铟镓锌氧化物(IGZO)、铟镓锡氧化物(IGTO)、铟镓锌锡氧化物(IGZTO)等。所述有源层106也可以采用例如，非晶硅、单晶硅、低温多晶硅等。最后，在所述第一遮光金属层1041、所述有源层106以及部分所述层间绝缘层105上沉积第三层无机绝缘膜，所述无机绝缘膜通过一道光罩经图案化后形成间隔设置的第一栅极绝缘层1071、第二栅极绝缘层1072以及第三栅极绝缘层1073，所述第一栅极绝缘层1071、所述第二栅极绝缘层1072以及所述第三栅极绝缘层1073膜层材料可为SiOx，SiNx，Al2O3/SiNx/SiOx，SiOx/SiNx/SiOx等，如图3C所示。\n\n[0056]S40，在所述衬底基板101上镀一层所述第一金属薄膜，以一道光罩将所述第一金属薄膜图案化后形成设置于所述衬底基板101上的公共电极层1081以及像素电极层1082、设置于所述第一栅极绝缘层1071上的第一栅极金属层1083、设置于所述第二栅极绝缘层1072上的第二栅极金属层1084以及设置于所述第三栅极绝缘层1073上的所述第一金属信号线1044。\n\n[0057]具体地，所述S40还包括：\n\n[0058]在所述衬底基板101上镀一层所述第一金属薄膜，以一道光罩将所述第一金属薄膜图案化后形成设置于所述衬底基板101上的公共电极层1081以及像素电极层1082、设置于所述第一栅极绝缘层1071上的第一栅极金属层1083、设置于所述第二栅极绝缘层1072上的第二栅极金属层1084以及设置于所述第三栅极绝缘层1073上的所述第一金属信号线1044，如图3D所示。\n\n[0059]S50，以一道光罩在所述衬底基板101上形成图案化的第一钝化层109，所述第一钝化层109完全覆盖所述第一遮光金属层1041、所述第一栅极绝缘层1071、所述第一栅极金属层1083、所述有源层106、所述第二栅极绝缘层1072以及所述第二栅极金属层1084，所述第一钝化层109还部分覆盖所述层间绝缘层105、所述第三栅极绝缘层1073以及所述第一金属信号线1044，之后在所述第一钝化层109上依次形成第二钝化层110和黑色矩阵111。\n\n[0060]具体地，所述S50还包括：\n\n[0061]首先，在所述衬底基板101正面沉积第四层无机绝缘薄膜，所述无机绝缘薄膜经光罩工艺后图案化为第一钝化层109，所述第一钝化层109完全覆盖所述第一遮光金属层1041、所述第一栅极绝缘层1071、所述第一栅极金属层1083、所述有源层106、所述第二栅极绝缘层1072以及所述第二栅极金属层1084，所述第一钝化层109还部分覆盖所述层间绝缘层105、所述第三栅极绝缘层1073以及所述第一金属信号线1044，所述第一钝化层109的膜层材料优选为SiOx，SiNx以及SiNOx中的任意一种；之后，在所述第一钝化层109上沉积形成第二钝化层110，所述第二钝化层110的膜层材料优选为SiNx以及SiNOx中的任意一种；最后，在所述第二钝化层110上制作黑色矩阵图案，形成黑色矩阵111，利用所述黑色矩阵111图层通过硬掩模工艺(Hard Mask)对所述第一钝化层109以及所述第二钝化层110进行自对准图案化处理，如图3E所示。\n\n[0062]S60，在所述衬底基板101远离所述第一金属电路层102一侧涂布软保护层202，去除所述硬保护层201，在所述衬底基板101靠近所述第一金属电路层102一侧涂布所述软保护层202。\n\n[0063]首先，在所述衬底基板101远离所述第一金属电路层102一侧(TFT电路侧)涂布软保护层202；之后去除所述衬底基板101靠近所述第一金属电路层102一侧(背面电路侧)的所述硬保护层201，并对背面电路侧涂布所述软保护层202，如图3F所示。\n\n[0064]S70，分别去除位于所述衬底基板101两侧的所述软保护层202，采用电连接部301将位于所述衬底基板101一侧的第一金属电路层102与位于所述衬底基板101相对另一侧的所述第一金属信号线1044电连接。\n\n[0065]首先，分别撕掉位于所述衬底基板101两侧的所述软保护层202，采用电连接部301将位于所述衬底基板一侧的第一金属电路层102与位于所述衬底基板101相对另一侧的所述第一金属信号线1044电连接；其中，所述电连接部301的材料为导电金属，如图3G所示。\n\n[0066]S80，将显示发光单元转移至所述衬底基板101并绑定，之后将覆晶薄膜113的一侧通过异方性导电胶膜112与所述第一金属电路层20电连接，所述覆晶薄膜113的相对另一侧绑定驱动芯片50。\n\n[0067]首先，将显示发光单元转移至所述衬底基板101上；之后，将所述显示发光单元与所述衬底基板101上的所述公共电极1081与所述像素电极1082绑定；最后，将覆晶薄膜(COF)113的一侧通过异方性导电胶膜(ACF)112与所述第一金属电路层20电连接，所述覆晶薄膜113的相对另一侧绑定驱动芯片(IC)50。其中，所述显示发光单元优选为Micro-LED发光层40，所述Micro-LED发光层40包括Micro-LED半导体层401、连接电极层402、第一电极层403以及第二电极层404，所述第一电极层403通过焊接层405与所述公共电极层1081电连接，所述第二电极层404通过另一所述焊接层405与所述像素电极层1082电连接，如图3H所示。\n\n[0068]本申请提出一种显示面板及其制备方法，主要方案为把显示面板的扇出电路(fanout)制作在显示面板衬底的背面，使得显示像素区域可以最大程度的靠近显示边框，达到无边框效果，拼接缝达到一个像素单元水平，在宏观上无明显的拼接痕迹。在显示发光单元优选为Micro-LED(微型发光二极管)或OLED(有机发光二极管)等主动发光显示基板上，显示面板的正面可以用于显示，而背面制作扇出电路(fanout)，扇出电路(fanout)与显示像素通过显示基板旁边的电连接部(side wiring)连接。在TFT(薄膜晶体管)层面，主要涉及Micro-LED的阵列基板的结构简化，降低制作步骤，提升制作效率。本申请相比于现有技术吗，具有以下几个优势：\n\n[0069]1、遮光金属层与源漏极金属层共用一层金属薄膜，Micro-LED(微型发光二极管)绑定于栅极金属层上(公共电极以及像素电极分别与栅极金属层同材质)；\n\n[0070]2、存储电容Cst采用LS/GI/GE(遮光金属层/栅极绝缘层/栅极金属层)叠层结构形成电容，由于电容区的层间绝缘层被刻蚀，栅极绝缘层厚度较薄，因此可形成较大MIM(金属-绝缘体-金属)结构电容，有利于提高像素密度；\n\n[0071]3、薄膜晶体管阵列部(Array)走线布局上，由于栅极金属层与源漏极金属层中间间隔栅极绝缘层以及层间绝缘层(GI+ILD)，膜层厚度较大，相比传统结构有利于降低寄生电容，减少信号阻容阻抗延迟效应(RC delay)；\n\n[0072]4、正面只需要6道光罩工艺(Mask)，结构简单化。\n\n[0073]综上所述，本申请实施例所提供的显示面板及制备方法，将TFT电路与扇出电路分别设置于阵列基板的相对两侧并通过阵列基板边缘的电连接部相连，同时遮光金属层与源漏极金属层共用一层金属薄膜，在使阵列基板结构简单化的同时，能够使显示区域更加靠近边框区，进一步获得无边框或窄边框的效果。\n\n[0074]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0075]以上对本申请实施例所提供的一种显示面板及制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10870, 23924, '技术领域\n\n[0001]本申请涉及一种显示器技术领域，尤其涉及一种LED背板的像素结构、LED显示面板及其制作方法。\n\n背景技术\n\n[0002]微型发光二极管(Micro light emitting diode，简称Micro-LED)通常是指在传统LED芯片结构基础上，将LED芯片尺寸规格缩小到200微米以内的尺寸，将红、绿、蓝三色MicroLED按照一定的规则排列在薄膜晶体管(Thin Film Transistor，简称TFT)或互补金属氧化物半导体(Complementary Metal Oxide Semiconductor，简称COMS)上，则形成了能够实现全彩显示的微器件。此种显示器具有独立控制的显示画素，具有独立发光控制、高辉度、低耗电、超高分辨率和超高色彩饱和度等特点，并且Micro-LED微显示器件由于具有自发光的技术特性，还可以实现柔性、透明显示等，而其耗电量仅约为液晶面板的10％。MicroLED是新一代显示技术，是LED微缩化和矩阵化技术，简单来说，就是将LED背光源进行薄膜化、微小化、阵列化，可以让LED单元小于100微米，与OLED一样能够实现每个图元单独定址，单独驱动发光。Mini/MicroLED(简称MLED)显示技术在近两年进入加速发展阶段，可以使用在中小型高附加价值显示器应用领域。相较OLED屏幕，MLED显示可以在成本、对比度、高亮度和轻薄外形上表现出更佳性能。\n\n[0003]Micro-LED发展成未来显示技术的热点之一，和目前的LCD和OLED显示器件相比，具有反应快、高色域、高PPI、低能耗等优势。但其技术难点多且技术复杂，特别是其关键技术巨量转移技术、LED颗粒微型化成为技术瓶颈，而Mini-LED作为Micro-LED与背板结合的产物，具有高对比度、高显色性能等可与OLED相媲美的特点，成本稍高LCD，仅为OLED的六成左右，相对Micro-LED、OLED更易实施，所以Mini-LED成为各大面板厂商布局热点。\n\n[0004]Mini-LED以及Micro-LED是未来显示技术发展的一种比较重要的方向，而主动式矩阵驱动方式更能进一步增强Mini-LED和Micro-LED的显示效果。在目前的技术中，一般的显示面板中的玻璃基板的主动驱动Mini-LED或Micro-LED采用两个薄膜晶体管和一个电容的架构，其中采用a-Si/IGZO/LPTS等半导体晶体管作为驱动元件，因此需要复杂的半导体制作工艺流程，且制造成本较高。\n\n发明内容\n\n[0005]为了克服现有技术的不足，本申请实施例提供一种LED背板的像素结构、LED显示面板及其制作方法，使用微型IC驱动芯片来驱动控制发光元件的方式，配合精减的工艺制程来制作主动驱动矩阵。\n\n[0006]本发明实施例提供了一种LED背板的像素结构，所述LED背板的像素结构包含多个子像素结构，所述子像素结构按照阵列式结构排列，所述LED背板的像素结构包含N行M列个所述子像素结构；\n\n[0007]其中，每个所述子像素结构包括扫描线、数据线、第一电源端、第二电源端、IC驱动芯片以及发光元件；\n\n[0008]在每个所述子像素结构中，由所述IC驱动芯片来驱动控制所述发光元件。\n\n[0009]根据本发明实施例所提供的LED背板的像素结构，在每个所述子像素结构中，所述扫描线连接所述IC驱动芯片并输出扫描信号，所述数据线连接所述IC驱动芯片并输出数据信号，所述第一电源端连接所述IC驱动芯片并输出第一电源信号，所述第二电源端连接所述IC驱动芯片并输出第二电源信号，所述发光元件的一端连接所述IC驱动芯片，所述发光元件的另一端连接所述第一电源端。\n\n[0010]根据本发明实施例所提供的LED背板的像素结构，M和N均为大于等于2的自然数。\n\n[0011]根据本发明实施例所提供的LED背板的像素结构，所述IC驱动芯片为主动驱动控制的IC元件。\n\n[0012]根据本发明实施例所提供的LED背板的像素结构，所述IC驱动芯片为微型IC元件。\n\n[0013]根据本发明实施例所提供的LED背板的像素结构，所述LED背板为Mini-LED背板或Micro-LED背板。\n\n[0014]本发明实施例还提供一种LED显示面板，所述LED显示面板包括衬底以及形成在所述衬底上的发光单元，所述发光单元包含像素结构；\n\n[0015]其中，所述像素结构包含多个子像素结构，所述子像素结构按照阵列式结构排列，每个所述子像素结构包括扫描线、数据线、第一电源端、第二电源端、IC驱动芯片以及发光元件；在每个所述子像素结构中，由所述IC驱动芯片来驱动控制所述发光元件；\n\n[0016]其中，所述发光单元被划分为若干个子画面，多个所述子画面分别由各个所述子像素结构驱动控制。\n\n[0017]根据本发明实施例所提供的LED显示面板，其特征在于，在每个所述子像素结构中，所述扫描线连接所述IC驱动芯片并输出扫描信号，所述数据线连接所述IC驱动芯片并输出数据信号，所述第一电源端连接所述IC驱动芯片并输出第一电源信号，所述第二电源端连接所述IC驱动芯片并输出第二电源信号，所述发光元件的一端连接所述IC驱动芯片，所述发光元件的另一端连接所述第一电源端。\n\n[0018]本发明实施例还提供一种LED显示面板的制作方法，包括以下步骤：\n\n[0019]S1、在玻璃基板上沉积第一金属层，并经过光罩图案化蚀刻形成金属导线；\n\n[0020]S2、通过表面贴装技术将IC驱动芯片固定在所述玻璃基板上；\n\n[0021]S3、在所述玻璃基板上沉积形成栅极绝缘层；\n\n[0022]S4、通过光罩蚀刻所述栅极绝缘层，暴露出LED绑定面以及部分金属导线；\n\n[0023]S5、在暴露出的所述部分金属导线上沉积形成透明导电层；\n\n[0024]S6、通过光罩刻蚀所述透明导电层，形成COF绑定面；\n\n[0025]S7、进行LED芯片的绑定和COF绑定。\n\n[0026]根据本发明实施例所提供的LED显示面板的制作方法，其特征在于，所述IC驱动芯片与所述金属导线相互连接，所述IC驱动芯片控制驱动所述LED芯片；所述IC驱动芯片为微型IC元件，所述LED芯片为Mini-LED芯片或Micro-LED芯片。\n\n[0027]本发明的有益效果为：本发明实施例所提供的一种LED背板的像素结构、LED显示面板及其制作方法，所述LED背板的像素结构包括多个子像素结构，在每个所述子像素结构中包含扫描线、数据线、第一电源端、第二电源端、IC驱动芯片以及发光元件，所述IC驱动芯片分别与扫描线、数据线、第一电源端、第二电源端以及发光元件相互连接；在所述子像素结构中，通过所述IC驱动芯片来驱动控制所述发光元件，每个所述子像素结构都是相互独立的。本实施例所提供的LED背板的像素结构采用IC驱动芯片取代了一般的两个薄膜晶体管和一个电容组成的驱动架构，本实施例所提供的LED背板的像素结构更加简洁，且制作工艺简单，还节约了制造成本。本实施例所提供的LED显示面板中使用了本实施例所提供的LED背板的像素结构，所述LED显示面板可以单独地控制每个像素中的LED元件，且由于所述LED显示面板去掉了薄膜晶体管架构，所述LED显示面板的制作更加简单方便了。本实施例所提供的LED显示面板制作方法，由于采用了IC驱动芯片作为LED发光元件的驱动结构，在基板的Array制程中不再需要制作薄膜晶体管，原来制作工艺中使用5道光罩的工艺可以缩减为只使用3到光罩的工艺，大大提升了工艺生产的生产效率，还有效的降低了制造成本。\n\n附图说明\n\n[0028]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0029]图1为现有技术中2T1C驱动架构结构示意图。\n\n[0030]图2为本实施例提供的LED背板的像素结构的结构示意图。\n\n[0031]图3为本实施例提供的LED显示面板的制作方法第一道光罩蚀刻示意图。\n\n[0032]图4为本实施例提供的LED显示面板的制作方法第二道光罩蚀刻示意图。\n\n[0033]图5为本实施例提供的LED显示面板的制作方法第三道光罩蚀刻示意图。\n\n具体实施方式\n\n[0034]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0035]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0036]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0037]在目前的Mini-LED以及Micro-LED显示面板中大多数均采用主动式矩阵驱动方式，主动式矩阵驱动方式更能进一步增强Mini-LED和Micro-LED的显示效果。目前常规的方法是在玻璃基板上制作主动驱动电路，所述主动驱动电路大多数采用两个薄膜晶体管和一个电容(2T1C)的架构。具体地，如图1所示，为目前2T1C驱动架构的结构示意图。参阅图1，所述驱动架构包括数据线DATA，扫描线SCAN，第一电源端VDD，第二电源端VSS，第一薄膜晶体管T1，第二薄膜晶体管T2以及LED发光元件。所述第一薄膜晶体管T1的栅极电性连接所述扫描线SCAN，所述第一薄膜晶体管T1的源极电性连接所述数据线DATA，所述第一薄膜晶体管T1的漏极电性连接所述第二薄膜晶体管T2的栅极。所述第二薄膜晶体管T2的源极电性连接所述LED发光元件的一端，所述第二薄膜晶体管T2的漏极电性连接所述第二电源端VSS。所述LED发光元件的一端电性连接所述第二薄膜晶体管T2的源极，所述LED发光元件的另一端电性连接所述第一电源端VDD。所述驱动架构通过两个薄膜晶体管之间的相互配合，来共同驱动控制所述LED发光元件。所述第一薄膜晶体管T1和所述第二薄膜晶体管T2采用了a-Si/IGZO/LPTS等半导体晶体管作为驱动元件，因此需要复杂的半导体薄膜晶体管的制作工艺流程，而且制作成本还比较高。\n\n[0038]因此，本实施例提供了一种LED背板的像素结构，通过将扫描晶体管和控制晶体管的功能集合到微型IC驱动芯片上，从而来代替一般的2T1C驱动架构。且本实施例所提供的LED背板的像素结构制作工艺简单，还可以节约制造成本。\n\n[0039]如图2所示，本发明实施例提供了一种LED背板的像素结构1的结构示意图。参阅图2，所述LED背板的像素结构1包括多个子像素结构10，所述子像素结构10按照阵列排布的方式排列，所述LED背板的像素结构1至少包含N行M列个所述子像素结构10；其中，M和N均为大于等于2的自然数。在本实施例中所提供的LED背板为Mini-LED背板或Micro-LED背板。\n\n[0040]在每个所述子像素结构10中，均包括扫描线SCAN101、数据线DATA102、第一电源端VDD103、第二电源端VSS104、IC驱动芯片105以及发光元件106；其中，所述发光元件106为Mini-LED芯片或Micro-LED芯片。在所述子像素结构10中，所述IC驱动芯片105分别与所述扫描线SCAN101、所述数据线DATA102、所述第一电源端VDD103、所述第二电源端VSS104以及所述发光元件106相互连接。具体地，在每个所述子像素结构10中，所述扫描线SCAN101连接所述IC驱动芯片105并在另一端输出扫描信号SCAN，所述数据线DATA102连接所述IC驱动芯片105并在另一端输出数据信号DATA，所述第一电源端VDD103连接所述IC驱动芯片105并在另一端输出第一电源信号VDD，所述第二电源端VSS104连接所述IC驱动芯片105并输出第二电源信号VSS，所述发光元件106的一端连接所述IC驱动芯片105，所述发光元件106的另一端连接所述第一电源端VDD103。一般地，所述第一电源端VDD103为电源正电压，所述第二电源端VSS104一般为接地电压或负值，相当于电源负极。所述IC驱动芯片105在接收到所述数据线DATA102和/或所述扫描线SCAN101的信号后，驱动控制所述发光元件106点亮或熄灭。\n\n[0041]在本实施例所提供的LED背板的像素结构1中，每个所述子像素结构10都包含一个所述IC驱动芯片105，所述IC驱动芯片105为主动驱动控制的IC元件，所述IC驱动芯片105为微型IC元件。具体地，每个子像素结构10均由各自的所述IC驱动芯片105独立控制。\n\n[0042]本实施例还提供一种LED显示面板，所述LED显示面板包括衬底以及形成在所述衬底上的发光单元，所述发光单元包含本实施例所提供的像素结构1；其中，所述像素结构1包含多个子像素结构10，所述子像素结构10按照阵列式结构排列，每个所述子像素结构10包括扫描线SCAN101、数据线DATA102、第一电源端VDD103、第二电源端VSS104、IC驱动芯片105以及发光元件106；在每个所述子像素结构10中，由所述IC驱动芯片105来驱动控制所述发光元件106；其中，所述发光单元被若干个所述子像素结构10划分成若干个子画面，多个所述子画面分别由各个所述子像素结构10驱动控制。所述显示面板接收到显示画面后，先将其分隔成若干个画面，然后发送给若干个子画面，每个所述子画面的所述IC驱动芯片105驱动控制所述发光元件106显示相应的子画面，从而形成一幅完整的画面。其中，所述LED显示面板为Mini-LED背板或Micro-LED背板。\n\n[0043]具体地，在每个所述子像素结构10中，均包括扫描线SCAN101、数据线DATA102、第一电源端VDD103、第二电源端VSS104、IC驱动芯片105以及发光元件106；其中，所述发光元件106为Mini-LED芯片或Micro-LED芯片。在所述子像素结构10中，所述IC驱动芯片105分别与所述扫描线SCAN101、所述数据线DATA102、所述第一电源端VDD103、所述第二电源端VSS104以及所述发光元件106相互连接。具体地，在每个所述子像素结构10中，所述扫描线SCAN101连接所述IC驱动芯片105并在另一端输出扫描信号SCAN，所述数据线DATA102连接所述IC驱动芯片105并在另一端输出数据信号DATA，所述第一电源端VDD103连接所述IC驱动芯片105并在另一端输出第一电源信号VDD，所述第二电源端VSS104连接所述IC驱动芯片105并输出第二电源信号VSS，所述发光元件106的一端连接所述IC驱动芯片105，所述发光元件106的另一端连接所述第一电源端VDD103。一般地，所述第一电源端VDD103为电源正电压，所述第二电源端VSS104一般为接地电压或负值，相当于电源负极。所述IC驱动芯片105在接收到所述数据线DATA102和/或所述扫描线SCAN101的信号后，驱动控制所述发光元件106点亮或熄灭。\n\n[0044]在本实施例所提供的LED显示面板，每个所述子像素结构10都包含一个所述IC驱动芯片105，所述IC驱动芯片105为主动驱动控制的IC元件，所述IC驱动芯片105为微型IC元件。具体地，每个子像素结构10均由各自的所述IC驱动芯片105独立控制。\n\n[0045]本实施例还提供一种LED显示面板的制作方法，包括以下步骤：\n\n[0046]S1、在玻璃基板上沉积第一金属层，并经过光罩图案化蚀刻形成金属导线；\n\n[0047]S2、通过表面贴装技术将IC驱动芯片固定在所述玻璃基板上；\n\n[0048]S3、在所述玻璃基板上沉积形成栅极绝缘层；\n\n[0049]S4、通过光罩蚀刻所述栅极绝缘层，暴露出LED绑定面以及部分金属导线；\n\n[0050]S5、在暴露出的所述部分金属导线上沉积形成透明导电层；\n\n[0051]S6、通过光罩刻蚀所述透明导电层，形成COF绑定面；\n\n[0052]S7、进行LED芯片的绑定和COF绑定。\n\n[0053]具体地，如图3-图5所示，为本实施例所提供的LED显示面板的制作方法的光罩蚀刻示意图。由图可知，在玻璃基板201上沉积第一金属层202，并经过一道光罩图案化蚀刻所述第一金属层202，形成金属导线，所述金属导线包括扫描线SCAN、数据线DATA、第一电源端VDD导线以及第二电源端VSS导线；随后再通过表面贴装技术将IC驱动芯片固定在所述玻璃基板101上，所述IC驱动芯片与所述金属导线相互连接；在所述IC驱动芯片沉积并形成栅极绝缘层203，所述栅极绝缘层203起到保护所述金属导线和所述IC驱动芯片的作用；通过第二道光罩蚀刻所述栅极绝缘层203，并暴露出LED绑定面204以及部分金属导线；在暴露出的所述部分金属导线上沉积氧化铟锡并形成透明导电层205；在通过第三道光罩刻蚀所述透明导电层205，形成COF绑定面206；最后在所述LED绑定面204上进行LED芯片的绑定以及在所述COF绑定面206上进行COF绑定。在本实施例所提供的LED显示面板的制作方法，只采用了三道光罩的制作工艺，而一般的Array制程因为需要制作薄膜晶体管，大多数都为5道光罩的制作工艺；因此，在本实施例所提供的LED显示面板的制作方法有效减少了制程中的光罩数量，节省了制作工艺流程，大大提高了生产效率，还有效减少了生产成本。\n\n[0054]综上所述，本发明实施例所提供的一种LED背板的像素结构、LED显示面板及其制作方法，所述LED背板的像素结构包括多个子像素结构，在每个所述子像素结构中包含扫描线、数据线、第一电源端、第二电源端、IC驱动芯片以及发光元件，所述IC驱动芯片分别与扫描线、数据线、第一电源端、第二电源端以及发光元件相互连接；在所述子像素结构中，通过所述IC驱动芯片来驱动控制所述发光元件，每个所述子像素结构都是相互独立的。本实施例所提供的LED背板的像素结构采用IC驱动芯片取代了一般的两个薄膜晶体管和一个电容组成的驱动架构，本实施例所提供的LED背板的像素结构更加简洁，且制作工艺简单，还节约了制造成本。本实施例所提供的LED显示面板中使用了本实施所提供的LED背板的像素结构，所述LED显示面板可以单独地控制每个像素中的LED元件，且由于所述LED显示面板去掉了薄膜晶体管架构，所述LED显示面板的制作更加简单方便了。本实施例所提供的LED显示面板制作方法，由于采用了IC驱动芯片作为LED发光元件的驱动结构，在基板的Array制程中不再需要制作薄膜晶体管，原来制作工艺中使用5道光罩的工艺可以缩减为只使用3到光罩的工艺，大大提升了工艺生产的生产效率，还有效的降低了制造成本。\n\n[0055]以上对本申请实施例所提供的一种LED背板的像素结构、LED显示面板及其制作方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及一种显示器技术领域，尤其涉及一种LED背板的像素结构、LED显示面板及其制作方法。\n\n背景技术\n\n[0002]微型发光二极管(Micro light emitting diode，简称Micro-LED)通常是指在传统LED芯片结构基础上，将LED芯片尺寸规格缩小到200微米以内的尺寸，将红、绿、蓝三色MicroLED按照一定的规则排列在薄膜晶体管(Thin Film Transistor，简称TFT)或互补金属氧化物半导体(Complementary Metal Oxide Semiconductor，简称COMS)上，则形成了能够实现全彩显示的微器件。此种显示器具有独立控制的显示画素，具有独立发光控制、高辉度、低耗电、超高分辨率和超高色彩饱和度等特点，并且Micro-LED微显示器件由于具有自发光的技术特性，还可以实现柔性、透明显示等，而其耗电量仅约为液晶面板的10％。MicroLED是新一代显示技术，是LED微缩化和矩阵化技术，简单来说，就是将LED背光源进行薄膜化、微小化、阵列化，可以让LED单元小于100微米，与OLED一样能够实现每个图元单独定址，单独驱动发光。Mini/MicroLED(简称MLED)显示技术在近两年进入加速发展阶段，可以使用在中小型高附加价值显示器应用领域。相较OLED屏幕，MLED显示可以在成本、对比度、高亮度和轻薄外形上表现出更佳性能。\n\n[0003]Micro-LED发展成未来显示技术的热点之一，和目前的LCD和OLED显示器件相比，具有反应快、高色域、高PPI、低能耗等优势。但其技术难点多且技术复杂，特别是其关键技术巨量转移技术、LED颗粒微型化成为技术瓶颈，而Mini-LED作为Micro-LED与背板结合的产物，具有高对比度、高显色性能等可与OLED相媲美的特点，成本稍高LCD，仅为OLED的六成左右，相对Micro-LED、OLED更易实施，所以Mini-LED成为各大面板厂商布局热点。\n\n[0004]Mini-LED以及Micro-LED是未来显示技术发展的一种比较重要的方向，而主动式矩阵驱动方式更能进一步增强Mini-LED和Micro-LED的显示效果。在目前的技术中，一般的显示面板中的玻璃基板的主动驱动Mini-LED或Micro-LED采用两个薄膜晶体管和一个电容的架构，其中采用a-Si/IGZO/LPTS等半导体晶体管作为驱动元件，因此需要复杂的半导体制作工艺流程，且制造成本较高。\n\n发明内容\n\n[0005]为了克服现有技术的不足，本申请实施例提供一种LED背板的像素结构、LED显示面板及其制作方法，使用微型IC驱动芯片来驱动控制发光元件的方式，配合精减的工艺制程来制作主动驱动矩阵。\n\n[0006]本发明实施例提供了一种LED背板的像素结构，所述LED背板的像素结构包含多个子像素结构，所述子像素结构按照阵列式结构排列，所述LED背板的像素结构包含N行M列个所述子像素结构；\n\n[0007]其中，每个所述子像素结构包括扫描线、数据线、第一电源端、第二电源端、IC驱动芯片以及发光元件；\n\n[0008]在每个所述子像素结构中，由所述IC驱动芯片来驱动控制所述发光元件。\n\n[0009]根据本发明实施例所提供的LED背板的像素结构，在每个所述子像素结构中，所述扫描线连接所述IC驱动芯片并输出扫描信号，所述数据线连接所述IC驱动芯片并输出数据信号，所述第一电源端连接所述IC驱动芯片并输出第一电源信号，所述第二电源端连接所述IC驱动芯片并输出第二电源信号，所述发光元件的一端连接所述IC驱动芯片，所述发光元件的另一端连接所述第一电源端。\n\n[0010]根据本发明实施例所提供的LED背板的像素结构，M和N均为大于等于2的自然数。\n\n[0011]根据本发明实施例所提供的LED背板的像素结构，所述IC驱动芯片为主动驱动控制的IC元件。\n\n[0012]根据本发明实施例所提供的LED背板的像素结构，所述IC驱动芯片为微型IC元件。\n\n[0013]根据本发明实施例所提供的LED背板的像素结构，所述LED背板为Mini-LED背板或Micro-LED背板。\n\n[0014]本发明实施例还提供一种LED显示面板，所述LED显示面板包括衬底以及形成在所述衬底上的发光单元，所述发光单元包含像素结构；\n\n[0015]其中，所述像素结构包含多个子像素结构，所述子像素结构按照阵列式结构排列，每个所述子像素结构包括扫描线、数据线、第一电源端、第二电源端、IC驱动芯片以及发光元件；在每个所述子像素结构中，由所述IC驱动芯片来驱动控制所述发光元件；\n\n[0016]其中，所述发光单元被划分为若干个子画面，多个所述子画面分别由各个所述子像素结构驱动控制。\n\n[0017]根据本发明实施例所提供的LED显示面板，其特征在于，在每个所述子像素结构中，所述扫描线连接所述IC驱动芯片并输出扫描信号，所述数据线连接所述IC驱动芯片并输出数据信号，所述第一电源端连接所述IC驱动芯片并输出第一电源信号，所述第二电源端连接所述IC驱动芯片并输出第二电源信号，所述发光元件的一端连接所述IC驱动芯片，所述发光元件的另一端连接所述第一电源端。\n\n[0018]本发明实施例还提供一种LED显示面板的制作方法，包括以下步骤：\n\n[0019]S1、在玻璃基板上沉积第一金属层，并经过光罩图案化蚀刻形成金属导线；\n\n[0020]S2、通过表面贴装技术将IC驱动芯片固定在所述玻璃基板上；\n\n[0021]S3、在所述玻璃基板上沉积形成栅极绝缘层；\n\n[0022]S4、通过光罩蚀刻所述栅极绝缘层，暴露出LED绑定面以及部分金属导线；\n\n[0023]S5、在暴露出的所述部分金属导线上沉积形成透明导电层；\n\n[0024]S6、通过光罩刻蚀所述透明导电层，形成COF绑定面；\n\n[0025]S7、进行LED芯片的绑定和COF绑定。\n\n[0026]根据本发明实施例所提供的LED显示面板的制作方法，其特征在于，所述IC驱动芯片与所述金属导线相互连接，所述IC驱动芯片控制驱动所述LED芯片；所述IC驱动芯片为微型IC元件，所述LED芯片为Mini-LED芯片或Micro-LED芯片。\n\n[0027]本发明的有益效果为：本发明实施例所提供的一种LED背板的像素结构、LED显示面板及其制作方法，所述LED背板的像素结构包括多个子像素结构，在每个所述子像素结构中包含扫描线、数据线、第一电源端、第二电源端、IC驱动芯片以及发光元件，所述IC驱动芯片分别与扫描线、数据线、第一电源端、第二电源端以及发光元件相互连接；在所述子像素结构中，通过所述IC驱动芯片来驱动控制所述发光元件，每个所述子像素结构都是相互独立的。本实施例所提供的LED背板的像素结构采用IC驱动芯片取代了一般的两个薄膜晶体管和一个电容组成的驱动架构，本实施例所提供的LED背板的像素结构更加简洁，且制作工艺简单，还节约了制造成本。本实施例所提供的LED显示面板中使用了本实施例所提供的LED背板的像素结构，所述LED显示面板可以单独地控制每个像素中的LED元件，且由于所述LED显示面板去掉了薄膜晶体管架构，所述LED显示面板的制作更加简单方便了。本实施例所提供的LED显示面板制作方法，由于采用了IC驱动芯片作为LED发光元件的驱动结构，在基板的Array制程中不再需要制作薄膜晶体管，原来制作工艺中使用5道光罩的工艺可以缩减为只使用3到光罩的工艺，大大提升了工艺生产的生产效率，还有效的降低了制造成本。\n\n附图说明\n\n[0028]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0029]图1为现有技术中2T1C驱动架构结构示意图。\n\n[0030]图2为本实施例提供的LED背板的像素结构的结构示意图。\n\n[0031]图3为本实施例提供的LED显示面板的制作方法第一道光罩蚀刻示意图。\n\n[0032]图4为本实施例提供的LED显示面板的制作方法第二道光罩蚀刻示意图。\n\n[0033]图5为本实施例提供的LED显示面板的制作方法第三道光罩蚀刻示意图。\n\n具体实施方式\n\n[0034]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0035]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0036]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0037]在目前的Mini-LED以及Micro-LED显示面板中大多数均采用主动式矩阵驱动方式，主动式矩阵驱动方式更能进一步增强Mini-LED和Micro-LED的显示效果。目前常规的方法是在玻璃基板上制作主动驱动电路，所述主动驱动电路大多数采用两个薄膜晶体管和一个电容(2T1C)的架构。具体地，如图1所示，为目前2T1C驱动架构的结构示意图。参阅图1，所述驱动架构包括数据线DATA，扫描线SCAN，第一电源端VDD，第二电源端VSS，第一薄膜晶体管T1，第二薄膜晶体管T2以及LED发光元件。所述第一薄膜晶体管T1的栅极电性连接所述扫描线SCAN，所述第一薄膜晶体管T1的源极电性连接所述数据线DATA，所述第一薄膜晶体管T1的漏极电性连接所述第二薄膜晶体管T2的栅极。所述第二薄膜晶体管T2的源极电性连接所述LED发光元件的一端，所述第二薄膜晶体管T2的漏极电性连接所述第二电源端VSS。所述LED发光元件的一端电性连接所述第二薄膜晶体管T2的源极，所述LED发光元件的另一端电性连接所述第一电源端VDD。所述驱动架构通过两个薄膜晶体管之间的相互配合，来共同驱动控制所述LED发光元件。所述第一薄膜晶体管T1和所述第二薄膜晶体管T2采用了a-Si/IGZO/LPTS等半导体晶体管作为驱动元件，因此需要复杂的半导体薄膜晶体管的制作工艺流程，而且制作成本还比较高。\n\n[0038]因此，本实施例提供了一种LED背板的像素结构，通过将扫描晶体管和控制晶体管的功能集合到微型IC驱动芯片上，从而来代替一般的2T1C驱动架构。且本实施例所提供的LED背板的像素结构制作工艺简单，还可以节约制造成本。\n\n[0039]如图2所示，本发明实施例提供了一种LED背板的像素结构1的结构示意图。参阅图2，所述LED背板的像素结构1包括多个子像素结构10，所述子像素结构10按照阵列排布的方式排列，所述LED背板的像素结构1至少包含N行M列个所述子像素结构10；其中，M和N均为大于等于2的自然数。在本实施例中所提供的LED背板为Mini-LED背板或Micro-LED背板。\n\n[0040]在每个所述子像素结构10中，均包括扫描线SCAN101、数据线DATA102、第一电源端VDD103、第二电源端VSS104、IC驱动芯片105以及发光元件106；其中，所述发光元件106为Mini-LED芯片或Micro-LED芯片。在所述子像素结构10中，所述IC驱动芯片105分别与所述扫描线SCAN101、所述数据线DATA102、所述第一电源端VDD103、所述第二电源端VSS104以及所述发光元件106相互连接。具体地，在每个所述子像素结构10中，所述扫描线SCAN101连接所述IC驱动芯片105并在另一端输出扫描信号SCAN，所述数据线DATA102连接所述IC驱动芯片105并在另一端输出数据信号DATA，所述第一电源端VDD103连接所述IC驱动芯片105并在另一端输出第一电源信号VDD，所述第二电源端VSS104连接所述IC驱动芯片105并输出第二电源信号VSS，所述发光元件106的一端连接所述IC驱动芯片105，所述发光元件106的另一端连接所述第一电源端VDD103。一般地，所述第一电源端VDD103为电源正电压，所述第二电源端VSS104一般为接地电压或负值，相当于电源负极。所述IC驱动芯片105在接收到所述数据线DATA102和/或所述扫描线SCAN101的信号后，驱动控制所述发光元件106点亮或熄灭。\n\n[0041]在本实施例所提供的LED背板的像素结构1中，每个所述子像素结构10都包含一个所述IC驱动芯片105，所述IC驱动芯片105为主动驱动控制的IC元件，所述IC驱动芯片105为微型IC元件。具体地，每个子像素结构10均由各自的所述IC驱动芯片105独立控制。\n\n[0042]本实施例还提供一种LED显示面板，所述LED显示面板包括衬底以及形成在所述衬底上的发光单元，所述发光单元包含本实施例所提供的像素结构1；其中，所述像素结构1包含多个子像素结构10，所述子像素结构10按照阵列式结构排列，每个所述子像素结构10包括扫描线SCAN101、数据线DATA102、第一电源端VDD103、第二电源端VSS104、IC驱动芯片105以及发光元件106；在每个所述子像素结构10中，由所述IC驱动芯片105来驱动控制所述发光元件106；其中，所述发光单元被若干个所述子像素结构10划分成若干个子画面，多个所述子画面分别由各个所述子像素结构10驱动控制。所述显示面板接收到显示画面后，先将其分隔成若干个画面，然后发送给若干个子画面，每个所述子画面的所述IC驱动芯片105驱动控制所述发光元件106显示相应的子画面，从而形成一幅完整的画面。其中，所述LED显示面板为Mini-LED背板或Micro-LED背板。\n\n[0043]具体地，在每个所述子像素结构10中，均包括扫描线SCAN101、数据线DATA102、第一电源端VDD103、第二电源端VSS104、IC驱动芯片105以及发光元件106；其中，所述发光元件106为Mini-LED芯片或Micro-LED芯片。在所述子像素结构10中，所述IC驱动芯片105分别与所述扫描线SCAN101、所述数据线DATA102、所述第一电源端VDD103、所述第二电源端VSS104以及所述发光元件106相互连接。具体地，在每个所述子像素结构10中，所述扫描线SCAN101连接所述IC驱动芯片105并在另一端输出扫描信号SCAN，所述数据线DATA102连接所述IC驱动芯片105并在另一端输出数据信号DATA，所述第一电源端VDD103连接所述IC驱动芯片105并在另一端输出第一电源信号VDD，所述第二电源端VSS104连接所述IC驱动芯片105并输出第二电源信号VSS，所述发光元件106的一端连接所述IC驱动芯片105，所述发光元件106的另一端连接所述第一电源端VDD103。一般地，所述第一电源端VDD103为电源正电压，所述第二电源端VSS104一般为接地电压或负值，相当于电源负极。所述IC驱动芯片105在接收到所述数据线DATA102和/或所述扫描线SCAN101的信号后，驱动控制所述发光元件106点亮或熄灭。\n\n[0044]在本实施例所提供的LED显示面板，每个所述子像素结构10都包含一个所述IC驱动芯片105，所述IC驱动芯片105为主动驱动控制的IC元件，所述IC驱动芯片105为微型IC元件。具体地，每个子像素结构10均由各自的所述IC驱动芯片105独立控制。\n\n[0045]本实施例还提供一种LED显示面板的制作方法，包括以下步骤：\n\n[0046]S1、在玻璃基板上沉积第一金属层，并经过光罩图案化蚀刻形成金属导线；\n\n[0047]S2、通过表面贴装技术将IC驱动芯片固定在所述玻璃基板上；\n\n[0048]S3、在所述玻璃基板上沉积形成栅极绝缘层；\n\n[0049]S4、通过光罩蚀刻所述栅极绝缘层，暴露出LED绑定面以及部分金属导线；\n\n[0050]S5、在暴露出的所述部分金属导线上沉积形成透明导电层；\n\n[0051]S6、通过光罩刻蚀所述透明导电层，形成COF绑定面；\n\n[0052]S7、进行LED芯片的绑定和COF绑定。\n\n[0053]具体地，如图3-图5所示，为本实施例所提供的LED显示面板的制作方法的光罩蚀刻示意图。由图可知，在玻璃基板201上沉积第一金属层202，并经过一道光罩图案化蚀刻所述第一金属层202，形成金属导线，所述金属导线包括扫描线SCAN、数据线DATA、第一电源端VDD导线以及第二电源端VSS导线；随后再通过表面贴装技术将IC驱动芯片固定在所述玻璃基板101上，所述IC驱动芯片与所述金属导线相互连接；在所述IC驱动芯片沉积并形成栅极绝缘层203，所述栅极绝缘层203起到保护所述金属导线和所述IC驱动芯片的作用；通过第二道光罩蚀刻所述栅极绝缘层203，并暴露出LED绑定面204以及部分金属导线；在暴露出的所述部分金属导线上沉积氧化铟锡并形成透明导电层205；在通过第三道光罩刻蚀所述透明导电层205，形成COF绑定面206；最后在所述LED绑定面204上进行LED芯片的绑定以及在所述COF绑定面206上进行COF绑定。在本实施例所提供的LED显示面板的制作方法，只采用了三道光罩的制作工艺，而一般的Array制程因为需要制作薄膜晶体管，大多数都为5道光罩的制作工艺；因此，在本实施例所提供的LED显示面板的制作方法有效减少了制程中的光罩数量，节省了制作工艺流程，大大提高了生产效率，还有效减少了生产成本。\n\n[0054]综上所述，本发明实施例所提供的一种LED背板的像素结构、LED显示面板及其制作方法，所述LED背板的像素结构包括多个子像素结构，在每个所述子像素结构中包含扫描线、数据线、第一电源端、第二电源端、IC驱动芯片以及发光元件，所述IC驱动芯片分别与扫描线、数据线、第一电源端、第二电源端以及发光元件相互连接；在所述子像素结构中，通过所述IC驱动芯片来驱动控制所述发光元件，每个所述子像素结构都是相互独立的。本实施例所提供的LED背板的像素结构采用IC驱动芯片取代了一般的两个薄膜晶体管和一个电容组成的驱动架构，本实施例所提供的LED背板的像素结构更加简洁，且制作工艺简单，还节约了制造成本。本实施例所提供的LED显示面板中使用了本实施所提供的LED背板的像素结构，所述LED显示面板可以单独地控制每个像素中的LED元件，且由于所述LED显示面板去掉了薄膜晶体管架构，所述LED显示面板的制作更加简单方便了。本实施例所提供的LED显示面板制作方法，由于采用了IC驱动芯片作为LED发光元件的驱动结构，在基板的Array制程中不再需要制作薄膜晶体管，原来制作工艺中使用5道光罩的工艺可以缩减为只使用3到光罩的工艺，大大提升了工艺生产的生产效率，还有效的降低了制造成本。\n\n[0055]以上对本申请实施例所提供的一种LED背板的像素结构、LED显示面板及其制作方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10871, 23925, '技术领域\n\n[0001]本申请涉及一种显示器技术领域，尤其涉及一种microLED显示面板及其制作方法。\n\n背景技术\n\n[0002]微型发光二极管(Micro light emitting diode，简称MicroLED)通常是指在传统MicroLED芯片结构基础上，将MicroLED芯片尺寸规格缩小到200微米以内的尺寸，将红、绿、蓝三色MicroLED按照一定的规则排列在薄膜晶体管(Thin Film Transistor，简称TFT)或互补金属氧化物半导体(Complementary Metal Oxide Semiconductor，简称COMS)上，则形成了能够实现全彩显示的微器件。此种显示器具有独立控制的显示画素，具有独立发光控制、高辉度、低耗电、超高分辨率和超高色彩饱和度等特点，并且MicroLED微显示器件由于具有自发光的技术特性，还可以实现柔性、透明显示等，而其耗电量仅约为液晶面板的10％。\n\n[0003]Micro LED是新一代显示技术，是LED微缩化和矩阵化技术，简单来说，就是将LED背光源进行薄膜化、微小化、阵列化，可以让LED单元小于100微米，与OLED一样能够实现每个图元单独定址，单独驱动发光。Mini/MicroLED(简称MLED)显示技术在近两年进入加速发展阶段，可以使用在中小型高附加价值显示器应用领域。相较OLED屏幕，MLED显示可以在成本、对比度、高亮度和轻薄外形上表现出更佳性能。\n\n[0004]在MLED显示技术中，背板技术作为关键技术，优化背板技术对于MLED显示技术至关重要。常规背沟道TFT背板技术采用6道光罩的技术，其中第二金属层使用金属钼/金属铜作为LED绑定平面，ITO作为COF绑定保护层，防止金属铜氧化。但是，该制程存在制程温度较低，钝化层成膜温度提高及后续钝化层制程的热退火制程容易造成金属铜电极氧化甚至脱落，影响电极导电性能。此外，金属氧化物半导体所需热处理温度随材料成分变化，部分氧化物需要高温制程，该技术不能更好的兼容。若为适应高温制程，使用金属钼/金属钛/金属镍单质或其合金等材料作为第二金属层的上层隔绝层，虽具备良好的热稳定性，且抗氧化能力强，可以提高制程温度，但是，该合金与LED绑定所需锡膏结合力较差，影响绑定效果，导致LED的绑定结果较差。\n\n发明内容\n\n[0005]为了克服现有技术的不足，本申请实施例提供一种microLED显示面板及其制作方法，通过在第二金属层上设置第三金属层，第三金属层的上层为与LED绑定所需要的锡膏结合力较好金属铜，可以提高制程温度以及提高了与LED绑定的效果。\n\n[0006]本发明实施例提供了一种microLED显示面板，所述microLED显示面板包括microLED背板以及设置在所述microLED背板上的microLED芯片；\n\n[0007]所述microLED背板至少包括第一金属层、第二金属层以及第三金属层；其中，所述第一金属层包括栅极电极层；所述第二金属层包括源漏极，数据线和外围走线；所述第二金属层包括第一子金属层和第二子金属层；所述第三金属层设置在所述第二子金属层的上方；\n\n[0008]所述第三金属层的上层为金属铜，所述第三金属层的下层为金属铝/金属钼/金属钛或其金属合金，所述microLED芯片设置在所述第三金属层的上方。\n\n[0009]根据本发明实施例所提供的microLED显示面板，所述microLED背板还包括：玻璃基板，栅极绝缘层，有源层，以及钝化层。\n\n[0010]根据本发明实施例所提供的microLED显示面板，在所述玻璃基板上设置所述第一金属层，所述第一金属层的材料为金属铝/金属钼/金属钛/金属镍或其金属合金。\n\n[0011]根据本发明实施例所提供的microLED显示面板，所述栅极绝缘层覆盖所述第一金属层，所述栅极绝缘层的膜层材质为SiOx，SiOx/SiNx叠层，或SiNx/SiOx叠层，或SiOx与SiNx、SiON相互叠层，或SiOx、SiNx与Al2O3叠层，或AlN。\n\n[0012]根据本发明实施例所提供的microLED显示面板，在所述栅极绝缘层上设置有源层，所述有源层为IGZO或IGZTO或IZO或其他半导体金属氧化物。\n\n[0013]根据本发明实施例所提供的microLED显示面板，所述第二金属层部分设置在所述有源层上，构成所述源漏极；所述第二金属层的所述第一子金属层15通过过孔与所述第一金属层相连接；所述第二金属层为金属钼/金属钛/金属镍或其金属合金。\n\n[0014]根据本发明实施例所提供的microLED显示面板，所述钝化层覆盖所述第二金属层以及所述有源层；所述钝化层的膜层材质为SiOx，SiOx/SiNx叠层，或SiNx/SiOx叠层，或SiOx与SiNx、SiON相互叠层，或SiOx、SiNx与Al2O3叠层，或AlN。\n\n[0015]本发明实施例还提供一种microLED显示面板的制作方法，包括以下步骤：\n\n[0016]步骤S1、在玻璃基板上沉积第一金属层，形成栅极电极层；\n\n[0017]步骤S2、在所述第一金属层上沉积形成栅极绝缘层；\n\n[0018]步骤S3、刻蚀所述栅极绝缘层形成一个过孔，暴露出所述第一金属层；\n\n[0019]步骤S4、沉积半导体金属氧化物形成有源层，并刻蚀形成有源层沟道；\n\n[0020]步骤S5、沉积第二金属层，并刻蚀形成源漏极、数据线以及外围走线；\n\n[0021]步骤S6、沉积形成钝化层；\n\n[0022]步骤S7、刻蚀所述钝化层，在所述钝化层上开孔暴露出部分所述第二金属层，形成LED绑定面；\n\n[0023]步骤S8、在暴露出的部分所述第二金属层上沉积第三金属层，并在所述第三金属层上刻蚀形成LED绑定面；\n\n[0024]步骤S9、刻蚀所述钝化层，在所述钝化层上开孔暴露出另一部分所述第二金属层，形成COF绑定面；\n\n[0025]步骤S10、在所述第三金属层上贴装microLED芯片。\n\n[0026]根据本发明实施例所提供的microLED显示面板的制作方法，所述第二金属层通过过孔与所述第一金属层相连接；所述第二金属层为金属钼/金属钛/金属镍或其金属合金。\n\n[0027]根据本发明实施例所提供的microLED显示面板的制作方法，所述第三金属层的上层为金属铜，所述第三金属层的下层为金属铝/金属钼/金属钛或其金属合金。\n\n[0028]本发明的有益效果为：本发明实施例所提供的一种microLED显示面板及其制作方法，通过在第二金属层上新增设一层第三金属层，所述第三金属层是由复合金属构成的，所述第三金属层的上层由金属铜构成，所述第三金属层的下层由金属铝/金属钼/金属钛或其金属合金构成。所述第三金属层的上层金属铜与microLED芯片绑定所需要的锡膏的结合力比较好，可以有效的解决因所述第二层金属采用金属钼/金属钛/金属镍或其金属合金而导致与锡膏结合力较差的问题。采用了所述第三金属层后，整个microLED显示面板的制程温度有所提高，同时，新增的所述第三金属层还可以作为外围的COF绑定平面。本发明实施例所提供的新的microLED背板解决了第二金属层与锡膏结合力较差的问题，还减少了microLED显示面板的制程，降低了生产成本，大大提高了生产效率。\n\n附图说明\n\n[0029]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0030]图1为本实施例提供的microLED显示面板的结构示意图。\n\n[0031]图2为本实施例提供的microLED显示面板制作方法步骤S1示意图。\n\n[0032]图3为本实施例提供的microLED显示面板制作方法步骤S2示意图。\n\n[0033]图4为本实施例提供的microLED显示面板制作方法步骤S3示意图。\n\n[0034]图5为本实施例提供的microLED显示面板制作方法步骤S4示意图。\n\n[0035]图6为本实施例提供的microLED显示面板制作方法步骤S5示意图。\n\n[0036]图7为本实施例提供的microLED显示面板制作方法步骤S6示意图。\n\n[0037]图8为本实施例提供的microLED显示面板制作方法步骤S7示意图。\n\n[0038]图9为本实施例提供的microLED显示面板制作方法步骤S8示意图。\n\n[0039]图10为本实施例提供的microLED显示面板制作方法步骤S9示意图。\n\n[0040]图11为本实施例提供的microLED显示面板制作方法步骤S10示意图。\n\n具体实施方式\n\n[0041]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0042]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0043]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0044]如图1所示，为本发明实施例提供的一种microLED显示面板的结构示意图。所述microLED显示面板包括microLED背板10以及microLED芯片108；具体地，所述microLED背板10包括：玻璃基板101，第一金属层102，栅极绝缘层103，有源层104，第二金属层105，钝化层106，第三金属层107。所述第二金属层105构成源漏极，数据线和外围走线；所述第二金属层105至少包括第一子金属层1051和第二子金属层1052；在所述第二子金属层1052的上方设置有第三金属层107。所述第三金属层107的上层为金属铜，所述第三金属层107的下层为金属铝/金属钼/金属钛或其金属合金，所述microLED芯片108设置在所述第三金属层107的上方。所述第三金属层107的上层金属铜与所述microLED芯片108绑定所需要的锡膏的结合力比较高。\n\n[0045]具体地，在所述玻璃基板101上设置所述第一金属层102，所述第一金属层102构成栅极电极层，所述第一金属层102的材料包括但不限于金属铝/金属钼/金属钛/金属镍等其他金属单质或其金属合金。所述栅极绝缘层103覆盖所述第一金属层102，例如，所述栅极绝缘层103完全覆盖所述第一金属层102。所述栅极绝缘层103的膜层材质包括但不限于SiOx，SiOx/SiNx叠层，或SiNx/SiOx叠层，或SiOx与SiNx、SiON相互叠层，或SiOx、SiNx与Al2O3叠层，或AlN或其他绝缘材料。\n\n[0046]具体地，在所述栅极绝缘层103上设置有源层104，所述有源层104包括但不限于IGZO或IGZTO或IZO或其他半导体金属氧化物，所述有源层104刻蚀有有源层沟道。所述第二金属层105构成源漏极，数据线和外围走线；所述第二金属层105包括所述第一子金属层1051和所述第二子金属层1052；所述第二金属层105部分设置在所述有源层104上，构成所述源漏极；所述第二金属层105的所述第一子金属层1051通过过孔1031与部分所述第一金属层102相连接；所述第二金属层105材质包括但不限于金属钼/金属钛/金属镍等其他金属单质或其金属合金。所述钝化层106覆盖所述第二金属层105以及所述有源层104，例如，所述钝化层106完全覆盖所述第二金属层105以及所述有源层104；所述钝化层106的膜层材质包括但不限于SiOx，SiOx/SiNx叠层，或SiNx/SiOx叠层，或SiOx与SiNx、SiON相互叠层，或SiOx、SiNx与Al2O3叠层，或AlN等其他绝缘材质。所述第三金属层107设置在所述第二子金属层1052的上方，所述第三金属层107的上层为金属铜，所述第三金属层107的下层包括但不限于金属铝/金属钼/金属钛或其金属合金。所述microLED芯片108通过锡膏绑定在所述第三金属层107的上方。\n\n[0047]本发明实施例所提供的microLED显示面板，通过在第二金属层105上新增设一层第三金属层107，所述第三金属层107是由复合金属构成的，所述第三金属层107的上层由金属铜构成，所述第三金属层107的下层由金属铝/金属钼/金属钛或其金属合金构成。所述第三金属层107的上层金属铜与所述microLED芯片108绑定所需要的锡膏的结合力比较好，可以有效的解决因所述第二层金属105采用金属钼/金属钛/金属镍或其金属合金而导致与锡膏结合力较差的问题。\n\n[0048]本发明实施例还提供一种microLED显示面板的制作方法，包括以下步骤：\n\n[0049]步骤S1、在玻璃基板101上沉积第一金属层102，形成栅极电极层；\n\n[0050]如图2所示，在所述玻璃基板101上沉积第一金属层102，制备形成栅极电极层；如图2所示，在所述玻璃基板101上有多个第一金属层102均匀分布。其中，所述第一金属层102的材料包括但不限于金属铝/金属钼/金属钛/金属镍或其他金属单质或其金属合金。\n\n[0051]步骤S2、在所述第一金属层102上沉积形成栅极绝缘层103；\n\n[0052]如图3所示，在所述第一金属层102上沉积并形成所述栅极绝缘层103，所述栅极绝缘层103覆盖所述第一金属层102，例如，所述栅极绝缘层103完全覆盖所述第一金属层102。所述栅极绝缘层103的膜层材质包括但不限于SiOx，SiOx/SiNx叠层，或SiNx/SiOx叠层，或SiOx与SiNx、SiON相互叠层，或SiOx、SiNx与Al2O3叠层，或AlN或其他绝缘材料。\n\n[0053]步骤S3、刻蚀所述栅极绝缘层103形成一个过孔1031，暴露出所述第一金属层102；\n\n[0054]如图4所示，对所述栅极绝缘层103进行刻蚀，在所述栅极绝缘层103上形成一个过孔1031，并暴露出部分所述第一金属层102。\n\n[0055]步骤S4、沉积半导体金属氧化物形成有源层104，并刻蚀形成有源层沟道；\n\n[0056]如图5所示，在所述栅极绝缘层103上沉积半导体金属氧化物材料，形成有源层104，并对所述有源层104进行刻蚀，形成薄膜晶体管的有源层沟道；所述有源层104与部分所述第一金属层102相对应。其中，所述有源层104材质包括但不限于IGZO或IGZTO或IZO或其他半导体金属氧化物。\n\n[0057]步骤S5、沉积第二金属层105，并刻蚀形成源漏极、数据线以及外围走线；\n\n[0058]如图6所示，沉积第二金属层105，部分所述第二金属层105在所述有源层两侧形成源漏极层，部分所述第二金属层105在所述栅极绝缘层103上分别形成数据线和外围走线。所述第二金属层105至少包括第一子金属层1051和第二子金属层1052；所述第二金属层105的所述第一子金属层1051通过过孔1031与部分所述第一金属层102相连接；所述第二金属层105材质包括但不限于金属钼/金属钛/金属镍等其他金属单质或其金属合金。\n\n[0059]步骤S6、沉积形成钝化层106；\n\n[0060]如图7所示，在所述第二金属层105上沉积所述钝化层106的材料，形成钝化层106。所述钝化层106覆盖所述第二金属层105以及所述有源层104，例如，所述钝化层106完全覆盖所述第二金属层105以及所述有源层104；所述钝化层106的膜层材质包括但不限于SiOx，SiOx/SiNx叠层，或SiNx/SiOx叠层，或SiOx与SiNx、SiON相互叠层，或SiOx、SiNx与Al2O3叠层，或AlN等其他绝缘材质。\n\n[0061]步骤S7、刻蚀所述钝化层106，在所述钝化层106上开孔暴露出部分所述第二金属层105，形成LED绑定面；\n\n[0062]如图8所示，对部分所述钝化层106进行刻蚀，在部分所述钝化层106上开孔暴露出部分所述第二金属层105，即所述第二金属层105的所述第二子金属层1052，并在所述第二金属层105的所述第二子金属层1052外围形成LED绑定面。\n\n[0063]步骤S8、在暴露出的部分所述第二金属层105上沉积第三金属层107，并在所述第三金属层107上刻蚀形成LED绑定面；\n\n[0064]如图9所示，在暴露出的部分所述第二金属层105上沉积第三金属层107，所述第三金属层107设置在所述第二金属层105的所述第二子金属层1052的上方，所述第三金属层107的上层为金属铜，所述第三金属层107的下层包括但不限于金属铝/金属钼/金属钛或其金属合金。并在所述第三金属层107上方通过刻蚀形成LED绑定面。\n\n[0065]步骤S9、刻蚀所述钝化层106，在所述钝化层106上开孔暴露出另一部分所述第二金属层105，形成COF绑定面；\n\n[0066]如图10所示，对部分所述钝化层106进行刻蚀，在部分所述钝化层106上开孔暴露出部分所述第二金属层105，即所述第二金属层105的所述第一子金属层1051，并在所述第二金属层105的所述第一子金属层1051外围形成COF绑定面。\n\n[0067]步骤S10、在所述第三金属层107上贴装microLED芯片108。\n\n[0068]如图11所示，通过锡膏将所述microLED芯片108贴装在所述第三金属层107上。由于所述第三金属层107是由复合金属构成的，所述第三金属层107的上层由金属铜构成，所述第三金属层107的下层由金属铝/金属钼/金属钛或其金属合金构成。所述第三金属层107的上层金属铜与所述microLED芯片108绑定所需要的锡膏的结合力比较好，可以有效的解决因所述第二金属层105采用金属钼/金属钛/金属镍或其金属合金而导致与锡膏结合力较差的问题。\n\n[0069]本发明实施例所提供的一种microLED显示面板及其制作方法，通过在第二金属层上新增设一层第三金属层，所述第三金属层是由复合金属构成的，所述第三金属层的上层由金属铜构成，所述第三金属层的下层由金属铝/金属钼/金属钛或其金属合金构成。所述第三金属层的上层金属铜与microLED芯片绑定所需要的锡膏的结合力比较好，可以有效的解决因所述第二层金属采用金属钼/金属钛/金属镍或其金属合金而导致与锡膏结合力较差的问题。采用了所述第三金属层后，整个microLED显示面板的制程温度有所提高，同时，新增的所述第三金属层还可以作为外围的COF绑定平面。本发明实施例所提供的新的microLED背板解决了第二金属层与锡膏结合力较差的问题，还减少了microLED显示面板的制程，降低了生产成本，大大提高了生产效率。\n\n[0070]以上对本申请实施例所提供的一种microLED显示面板及其制作方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及一种显示器技术领域，尤其涉及一种microLED显示面板及其制作方法。\n\n背景技术\n\n[0002]微型发光二极管(Micro light emitting diode，简称MicroLED)通常是指在传统MicroLED芯片结构基础上，将MicroLED芯片尺寸规格缩小到200微米以内的尺寸，将红、绿、蓝三色MicroLED按照一定的规则排列在薄膜晶体管(Thin Film Transistor，简称TFT)或互补金属氧化物半导体(Complementary Metal Oxide Semiconductor，简称COMS)上，则形成了能够实现全彩显示的微器件。此种显示器具有独立控制的显示画素，具有独立发光控制、高辉度、低耗电、超高分辨率和超高色彩饱和度等特点，并且MicroLED微显示器件由于具有自发光的技术特性，还可以实现柔性、透明显示等，而其耗电量仅约为液晶面板的10％。\n\n[0003]Micro LED是新一代显示技术，是LED微缩化和矩阵化技术，简单来说，就是将LED背光源进行薄膜化、微小化、阵列化，可以让LED单元小于100微米，与OLED一样能够实现每个图元单独定址，单独驱动发光。Mini/MicroLED(简称MLED)显示技术在近两年进入加速发展阶段，可以使用在中小型高附加价值显示器应用领域。相较OLED屏幕，MLED显示可以在成本、对比度、高亮度和轻薄外形上表现出更佳性能。\n\n[0004]在MLED显示技术中，背板技术作为关键技术，优化背板技术对于MLED显示技术至关重要。常规背沟道TFT背板技术采用6道光罩的技术，其中第二金属层使用金属钼/金属铜作为LED绑定平面，ITO作为COF绑定保护层，防止金属铜氧化。但是，该制程存在制程温度较低，钝化层成膜温度提高及后续钝化层制程的热退火制程容易造成金属铜电极氧化甚至脱落，影响电极导电性能。此外，金属氧化物半导体所需热处理温度随材料成分变化，部分氧化物需要高温制程，该技术不能更好的兼容。若为适应高温制程，使用金属钼/金属钛/金属镍单质或其合金等材料作为第二金属层的上层隔绝层，虽具备良好的热稳定性，且抗氧化能力强，可以提高制程温度，但是，该合金与LED绑定所需锡膏结合力较差，影响绑定效果，导致LED的绑定结果较差。\n\n发明内容\n\n[0005]为了克服现有技术的不足，本申请实施例提供一种microLED显示面板及其制作方法，通过在第二金属层上设置第三金属层，第三金属层的上层为与LED绑定所需要的锡膏结合力较好金属铜，可以提高制程温度以及提高了与LED绑定的效果。\n\n[0006]本发明实施例提供了一种microLED显示面板，所述microLED显示面板包括microLED背板以及设置在所述microLED背板上的microLED芯片；\n\n[0007]所述microLED背板至少包括第一金属层、第二金属层以及第三金属层；其中，所述第一金属层包括栅极电极层；所述第二金属层包括源漏极，数据线和外围走线；所述第二金属层包括第一子金属层和第二子金属层；所述第三金属层设置在所述第二子金属层的上方；\n\n[0008]所述第三金属层的上层为金属铜，所述第三金属层的下层为金属铝/金属钼/金属钛或其金属合金，所述microLED芯片设置在所述第三金属层的上方。\n\n[0009]根据本发明实施例所提供的microLED显示面板，所述microLED背板还包括：玻璃基板，栅极绝缘层，有源层，以及钝化层。\n\n[0010]根据本发明实施例所提供的microLED显示面板，在所述玻璃基板上设置所述第一金属层，所述第一金属层的材料为金属铝/金属钼/金属钛/金属镍或其金属合金。\n\n[0011]根据本发明实施例所提供的microLED显示面板，所述栅极绝缘层覆盖所述第一金属层，所述栅极绝缘层的膜层材质为SiOx，SiOx/SiNx叠层，或SiNx/SiOx叠层，或SiOx与SiNx、SiON相互叠层，或SiOx、SiNx与Al2O3叠层，或AlN。\n\n[0012]根据本发明实施例所提供的microLED显示面板，在所述栅极绝缘层上设置有源层，所述有源层为IGZO或IGZTO或IZO或其他半导体金属氧化物。\n\n[0013]根据本发明实施例所提供的microLED显示面板，所述第二金属层部分设置在所述有源层上，构成所述源漏极；所述第二金属层的所述第一子金属层15通过过孔与所述第一金属层相连接；所述第二金属层为金属钼/金属钛/金属镍或其金属合金。\n\n[0014]根据本发明实施例所提供的microLED显示面板，所述钝化层覆盖所述第二金属层以及所述有源层；所述钝化层的膜层材质为SiOx，SiOx/SiNx叠层，或SiNx/SiOx叠层，或SiOx与SiNx、SiON相互叠层，或SiOx、SiNx与Al2O3叠层，或AlN。\n\n[0015]本发明实施例还提供一种microLED显示面板的制作方法，包括以下步骤：\n\n[0016]步骤S1、在玻璃基板上沉积第一金属层，形成栅极电极层；\n\n[0017]步骤S2、在所述第一金属层上沉积形成栅极绝缘层；\n\n[0018]步骤S3、刻蚀所述栅极绝缘层形成一个过孔，暴露出所述第一金属层；\n\n[0019]步骤S4、沉积半导体金属氧化物形成有源层，并刻蚀形成有源层沟道；\n\n[0020]步骤S5、沉积第二金属层，并刻蚀形成源漏极、数据线以及外围走线；\n\n[0021]步骤S6、沉积形成钝化层；\n\n[0022]步骤S7、刻蚀所述钝化层，在所述钝化层上开孔暴露出部分所述第二金属层，形成LED绑定面；\n\n[0023]步骤S8、在暴露出的部分所述第二金属层上沉积第三金属层，并在所述第三金属层上刻蚀形成LED绑定面；\n\n[0024]步骤S9、刻蚀所述钝化层，在所述钝化层上开孔暴露出另一部分所述第二金属层，形成COF绑定面；\n\n[0025]步骤S10、在所述第三金属层上贴装microLED芯片。\n\n[0026]根据本发明实施例所提供的microLED显示面板的制作方法，所述第二金属层通过过孔与所述第一金属层相连接；所述第二金属层为金属钼/金属钛/金属镍或其金属合金。\n\n[0027]根据本发明实施例所提供的microLED显示面板的制作方法，所述第三金属层的上层为金属铜，所述第三金属层的下层为金属铝/金属钼/金属钛或其金属合金。\n\n[0028]本发明的有益效果为：本发明实施例所提供的一种microLED显示面板及其制作方法，通过在第二金属层上新增设一层第三金属层，所述第三金属层是由复合金属构成的，所述第三金属层的上层由金属铜构成，所述第三金属层的下层由金属铝/金属钼/金属钛或其金属合金构成。所述第三金属层的上层金属铜与microLED芯片绑定所需要的锡膏的结合力比较好，可以有效的解决因所述第二层金属采用金属钼/金属钛/金属镍或其金属合金而导致与锡膏结合力较差的问题。采用了所述第三金属层后，整个microLED显示面板的制程温度有所提高，同时，新增的所述第三金属层还可以作为外围的COF绑定平面。本发明实施例所提供的新的microLED背板解决了第二金属层与锡膏结合力较差的问题，还减少了microLED显示面板的制程，降低了生产成本，大大提高了生产效率。\n\n附图说明\n\n[0029]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0030]图1为本实施例提供的microLED显示面板的结构示意图。\n\n[0031]图2为本实施例提供的microLED显示面板制作方法步骤S1示意图。\n\n[0032]图3为本实施例提供的microLED显示面板制作方法步骤S2示意图。\n\n[0033]图4为本实施例提供的microLED显示面板制作方法步骤S3示意图。\n\n[0034]图5为本实施例提供的microLED显示面板制作方法步骤S4示意图。\n\n[0035]图6为本实施例提供的microLED显示面板制作方法步骤S5示意图。\n\n[0036]图7为本实施例提供的microLED显示面板制作方法步骤S6示意图。\n\n[0037]图8为本实施例提供的microLED显示面板制作方法步骤S7示意图。\n\n[0038]图9为本实施例提供的microLED显示面板制作方法步骤S8示意图。\n\n[0039]图10为本实施例提供的microLED显示面板制作方法步骤S9示意图。\n\n[0040]图11为本实施例提供的microLED显示面板制作方法步骤S10示意图。\n\n具体实施方式\n\n[0041]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0042]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0043]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0044]如图1所示，为本发明实施例提供的一种microLED显示面板的结构示意图。所述microLED显示面板包括microLED背板10以及microLED芯片108；具体地，所述microLED背板10包括：玻璃基板101，第一金属层102，栅极绝缘层103，有源层104，第二金属层105，钝化层106，第三金属层107。所述第二金属层105构成源漏极，数据线和外围走线；所述第二金属层105至少包括第一子金属层1051和第二子金属层1052；在所述第二子金属层1052的上方设置有第三金属层107。所述第三金属层107的上层为金属铜，所述第三金属层107的下层为金属铝/金属钼/金属钛或其金属合金，所述microLED芯片108设置在所述第三金属层107的上方。所述第三金属层107的上层金属铜与所述microLED芯片108绑定所需要的锡膏的结合力比较高。\n\n[0045]具体地，在所述玻璃基板101上设置所述第一金属层102，所述第一金属层102构成栅极电极层，所述第一金属层102的材料包括但不限于金属铝/金属钼/金属钛/金属镍等其他金属单质或其金属合金。所述栅极绝缘层103覆盖所述第一金属层102，例如，所述栅极绝缘层103完全覆盖所述第一金属层102。所述栅极绝缘层103的膜层材质包括但不限于SiOx，SiOx/SiNx叠层，或SiNx/SiOx叠层，或SiOx与SiNx、SiON相互叠层，或SiOx、SiNx与Al2O3叠层，或AlN或其他绝缘材料。\n\n[0046]具体地，在所述栅极绝缘层103上设置有源层104，所述有源层104包括但不限于IGZO或IGZTO或IZO或其他半导体金属氧化物，所述有源层104刻蚀有有源层沟道。所述第二金属层105构成源漏极，数据线和外围走线；所述第二金属层105包括所述第一子金属层1051和所述第二子金属层1052；所述第二金属层105部分设置在所述有源层104上，构成所述源漏极；所述第二金属层105的所述第一子金属层1051通过过孔1031与部分所述第一金属层102相连接；所述第二金属层105材质包括但不限于金属钼/金属钛/金属镍等其他金属单质或其金属合金。所述钝化层106覆盖所述第二金属层105以及所述有源层104，例如，所述钝化层106完全覆盖所述第二金属层105以及所述有源层104；所述钝化层106的膜层材质包括但不限于SiOx，SiOx/SiNx叠层，或SiNx/SiOx叠层，或SiOx与SiNx、SiON相互叠层，或SiOx、SiNx与Al2O3叠层，或AlN等其他绝缘材质。所述第三金属层107设置在所述第二子金属层1052的上方，所述第三金属层107的上层为金属铜，所述第三金属层107的下层包括但不限于金属铝/金属钼/金属钛或其金属合金。所述microLED芯片108通过锡膏绑定在所述第三金属层107的上方。\n\n[0047]本发明实施例所提供的microLED显示面板，通过在第二金属层105上新增设一层第三金属层107，所述第三金属层107是由复合金属构成的，所述第三金属层107的上层由金属铜构成，所述第三金属层107的下层由金属铝/金属钼/金属钛或其金属合金构成。所述第三金属层107的上层金属铜与所述microLED芯片108绑定所需要的锡膏的结合力比较好，可以有效的解决因所述第二层金属105采用金属钼/金属钛/金属镍或其金属合金而导致与锡膏结合力较差的问题。\n\n[0048]本发明实施例还提供一种microLED显示面板的制作方法，包括以下步骤：\n\n[0049]步骤S1、在玻璃基板101上沉积第一金属层102，形成栅极电极层；\n\n[0050]如图2所示，在所述玻璃基板101上沉积第一金属层102，制备形成栅极电极层；如图2所示，在所述玻璃基板101上有多个第一金属层102均匀分布。其中，所述第一金属层102的材料包括但不限于金属铝/金属钼/金属钛/金属镍或其他金属单质或其金属合金。\n\n[0051]步骤S2、在所述第一金属层102上沉积形成栅极绝缘层103；\n\n[0052]如图3所示，在所述第一金属层102上沉积并形成所述栅极绝缘层103，所述栅极绝缘层103覆盖所述第一金属层102，例如，所述栅极绝缘层103完全覆盖所述第一金属层102。所述栅极绝缘层103的膜层材质包括但不限于SiOx，SiOx/SiNx叠层，或SiNx/SiOx叠层，或SiOx与SiNx、SiON相互叠层，或SiOx、SiNx与Al2O3叠层，或AlN或其他绝缘材料。\n\n[0053]步骤S3、刻蚀所述栅极绝缘层103形成一个过孔1031，暴露出所述第一金属层102；\n\n[0054]如图4所示，对所述栅极绝缘层103进行刻蚀，在所述栅极绝缘层103上形成一个过孔1031，并暴露出部分所述第一金属层102。\n\n[0055]步骤S4、沉积半导体金属氧化物形成有源层104，并刻蚀形成有源层沟道；\n\n[0056]如图5所示，在所述栅极绝缘层103上沉积半导体金属氧化物材料，形成有源层104，并对所述有源层104进行刻蚀，形成薄膜晶体管的有源层沟道；所述有源层104与部分所述第一金属层102相对应。其中，所述有源层104材质包括但不限于IGZO或IGZTO或IZO或其他半导体金属氧化物。\n\n[0057]步骤S5、沉积第二金属层105，并刻蚀形成源漏极、数据线以及外围走线；\n\n[0058]如图6所示，沉积第二金属层105，部分所述第二金属层105在所述有源层两侧形成源漏极层，部分所述第二金属层105在所述栅极绝缘层103上分别形成数据线和外围走线。所述第二金属层105至少包括第一子金属层1051和第二子金属层1052；所述第二金属层105的所述第一子金属层1051通过过孔1031与部分所述第一金属层102相连接；所述第二金属层105材质包括但不限于金属钼/金属钛/金属镍等其他金属单质或其金属合金。\n\n[0059]步骤S6、沉积形成钝化层106；\n\n[0060]如图7所示，在所述第二金属层105上沉积所述钝化层106的材料，形成钝化层106。所述钝化层106覆盖所述第二金属层105以及所述有源层104，例如，所述钝化层106完全覆盖所述第二金属层105以及所述有源层104；所述钝化层106的膜层材质包括但不限于SiOx，SiOx/SiNx叠层，或SiNx/SiOx叠层，或SiOx与SiNx、SiON相互叠层，或SiOx、SiNx与Al2O3叠层，或AlN等其他绝缘材质。\n\n[0061]步骤S7、刻蚀所述钝化层106，在所述钝化层106上开孔暴露出部分所述第二金属层105，形成LED绑定面；\n\n[0062]如图8所示，对部分所述钝化层106进行刻蚀，在部分所述钝化层106上开孔暴露出部分所述第二金属层105，即所述第二金属层105的所述第二子金属层1052，并在所述第二金属层105的所述第二子金属层1052外围形成LED绑定面。\n\n[0063]步骤S8、在暴露出的部分所述第二金属层105上沉积第三金属层107，并在所述第三金属层107上刻蚀形成LED绑定面；\n\n[0064]如图9所示，在暴露出的部分所述第二金属层105上沉积第三金属层107，所述第三金属层107设置在所述第二金属层105的所述第二子金属层1052的上方，所述第三金属层107的上层为金属铜，所述第三金属层107的下层包括但不限于金属铝/金属钼/金属钛或其金属合金。并在所述第三金属层107上方通过刻蚀形成LED绑定面。\n\n[0065]步骤S9、刻蚀所述钝化层106，在所述钝化层106上开孔暴露出另一部分所述第二金属层105，形成COF绑定面；\n\n[0066]如图10所示，对部分所述钝化层106进行刻蚀，在部分所述钝化层106上开孔暴露出部分所述第二金属层105，即所述第二金属层105的所述第一子金属层1051，并在所述第二金属层105的所述第一子金属层1051外围形成COF绑定面。\n\n[0067]步骤S10、在所述第三金属层107上贴装microLED芯片108。\n\n[0068]如图11所示，通过锡膏将所述microLED芯片108贴装在所述第三金属层107上。由于所述第三金属层107是由复合金属构成的，所述第三金属层107的上层由金属铜构成，所述第三金属层107的下层由金属铝/金属钼/金属钛或其金属合金构成。所述第三金属层107的上层金属铜与所述microLED芯片108绑定所需要的锡膏的结合力比较好，可以有效的解决因所述第二金属层105采用金属钼/金属钛/金属镍或其金属合金而导致与锡膏结合力较差的问题。\n\n[0069]本发明实施例所提供的一种microLED显示面板及其制作方法，通过在第二金属层上新增设一层第三金属层，所述第三金属层是由复合金属构成的，所述第三金属层的上层由金属铜构成，所述第三金属层的下层由金属铝/金属钼/金属钛或其金属合金构成。所述第三金属层的上层金属铜与microLED芯片绑定所需要的锡膏的结合力比较好，可以有效的解决因所述第二层金属采用金属钼/金属钛/金属镍或其金属合金而导致与锡膏结合力较差的问题。采用了所述第三金属层后，整个microLED显示面板的制程温度有所提高，同时，新增的所述第三金属层还可以作为外围的COF绑定平面。本发明实施例所提供的新的microLED背板解决了第二金属层与锡膏结合力较差的问题，还减少了microLED显示面板的制程，降低了生产成本，大大提高了生产效率。\n\n[0070]以上对本申请实施例所提供的一种microLED显示面板及其制作方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10872, 23926, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种Micro LED及其制备方法。\n\n背景技术\n\n[0002]Micro LED(微型发光二极管)是新一代显示技术,比现有的OLED(有机发光二极管)技术亮度更高、发光效率更好、但功耗更低。Micro LED技术，将LED结构设计进行薄膜化、微小化、阵列化,其尺寸仅在1～10um等级左右。Micro LED最大的优势来自于微米等级的间距,每一点像素(pixel)都能定址控制及单点驱动发光、寿命长、应用范畴广。且封装要求低，更容易实现柔性及无缝拼接显示，是未来极具有发展潜力的未来显示器。\n\n[0003]但限制Micro LED显示技术发展的瓶颈主要包括巨量转移技术。巨量转移技术即如何将大量微小尺度的Micro LED晶粒转移到大尺寸的转移板上，是Micro LED产品量产化的重要技术，如何保证巨量转移技术的低成本和高良率，是目前主要研究的技术问题。现有转移技术方案目前转移制程多，制程复杂，对原材料的需求量较大，制作成本高昂。\n\n[0004]因此，现有技术存在缺陷，急需改进。\n\n发明内容\n\n[0005]本申请的目的在于提供一种Micro LED及其制备方法，以解决现有技术中转移制程复杂，制作成本高昂的问题，从而提高生产率。\n\n[0006]为了解决上述问题，本申请提供一种Micro LED晶粒，所述Micro LED晶粒包括依次设置在第一基板上的一激光释放层、一弱化结构层以及一磊晶层；其中，所述弱化结构层包括靠近磊晶层一侧的空洞以及结构层。\n\n[0007]在一些实施例中，所述磊晶层包括依次沉积的一缓冲层、一N型半导体层、一发光层以及一P型半导体层，其中，所述缓冲层覆盖所述激光释放层以及弱化结构层。\n\n[0008]在一些实施例中，所述Micro LED晶粒还包括一N型电极以及一P型电极，所述N型电极与所述N型半导体层接触，所述P型电极与所述P型半导体层接触。\n\n[0009]在一些实施例中，所述Micro LED晶粒还包括一扩散层，所述扩散层覆盖所述P型半导体层，所述P型电极与所述扩散层接触。\n\n[0010]在一些实施例中，所述Micro LED晶粒还包括一保护层，所述保护层包覆于所述Micro LED单元外侧，露出所述N型电极以及所述P型电极的一部分。\n\n[0011]在一些实施例中，所述激光释放层的材料为聚酰亚胺。\n\n[0012]在一些实施例中，所述弱化结构层的材料为非晶硅、多晶硅以及含硅化合物中的至少一种。\n\n[0013]在一些实施例中，所述扩散层的材料为氧化铟锡、氧化铟锌、氧化铟镓锌、氧化铟锡锌以及导电性高分子中的至少一种。\n\n[0014]本申请还提供一种Micro LED基板，所述Micro LED基板包括第一基板，所述第一基板上设置有多个上述的Micro LED晶粒。\n\n[0015]本申请还提供一种上述Micro LED基板的制备方法，包括步骤：\n\n[0016]提供一第一基板以及一第一临时基板，在所述第一基板上沉积聚酰亚胺材料，形成激光释放层，并且在所述第一临时基板上沉积含硅材料，经过图案化处理形成一硅结构层；\n\n[0017]在所述第一临时基板的所述硅结构层上依次沉积磊晶层材料以及透明扩散材料，并且用UV解黏胶贴合一第二临时基板，然后通过激光剥离所述第一临时基板；\n\n[0018]将剥离所述第一临时基板后的硅结构层与所述激光释放层键合，然后移除所述UV解黏胶以及第二临时基板，并进行图案化处理形成形成缓冲层、N型半导体层、发光层、P型半导体层以及扩散层；\n\n[0019]沉积电极材料，图案化形成N型电极以及P型电极，并对所述硅结构层进行化学蚀刻，产生空洞以及结构层，以形成弱化结构层；\n\n[0020]沉积保护材料，并经过图案化处理形成保护层。\n\n[0021]本申请公开了一种Micro LED晶粒、Micro LED基板及其制备方法。所述Micro LED晶粒包括依次设置在第一基板上的一激光释放层、一弱化结构层以及一磊晶层；其中，所述弱化结构层包括靠近磊晶层一侧的空洞以及结构层。所述Micro LED基板包括多个设置在第一基板上的Micro LED晶粒，这种既具有弱化结构也具有激光释放层的Micro LED基板，具有选择性激光剥离功能，可以实现一步转移以及绑定后的巨量修补技术，且激光剥离后的Micro LED晶粒无需对基板进行盐酸清洗，减少了制程工艺以及对原材料的使用。由于修复时所使用的Micro LED基板与一步转移时的Micro LED基板相同，从而规避不必要的良率损失。\n\n附图说明\n\n[0022]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0023]图1为本申请实施例所提供的一种Micro LED基板的结构示意图。\n\n[0024]图2A至图2E为本申请实施例所提供的一种Micro LED基板的各膜层结构示意图。\n\n[0025]图3为本申请实施例所提供的一种Micro LED基板的制备方法流程图。\n\n[0026]图4为本申请实施例所提供的一种Micro LED基板与TFT基板对位连接后的结构示意图。\n\n[0027]图5为本申请实施例所提供的一种Micro LED晶粒的转移方法流程图。\n\n[0028]图6为本申请实施例所提供的一种Micro LED晶粒的巨量修复方法流程图。\n\n具体实施方式\n\n[0029]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0030]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0031]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0032]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0033]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0034]具体的，请参阅图1，图1为本申请实施例所提供的一种Micro LED基板的结构示意图。本申请提供一种Micro LED晶粒，位于第一基板100上，所述Micro LED晶粒包括依次沉积的一激光释放层110、一弱化结构层120以及一磊晶层130；其中，所述弱化结构层120包括靠近磊晶层一侧的空洞121以及结构层122。所述磊晶层130包括依次沉积的一缓冲层131、一N型半导体层132、一发光层133以及一P型半导体层134，其中，所述缓冲层134覆盖所述激光释放层110以及弱化结构层120。所述Micro LED晶粒还包括一N型电极151以及一P型电极152，所述N型电极151与所述N型半导体层132接触，所述P型电极152与所述P型半导体层134接触。\n\n[0035]在本申请中，所述Micro LED晶粒还包括一扩散层140，所述扩散层140覆盖所述P型半导体层134，所述P型电极152与所述扩散层140接触。本领域技术人员可以理解的是，当设置有所述扩散层140时，所述P型电极152与所述扩散层140直接接触，通过所述扩散层140与所述P型半导体层134连通。所述扩散层140还可以覆盖所述N型半导体层132，此时，所述N型电极151与所述扩散层140直接接触，通过所述扩散层140与所述N型半导体层132连通。优选地，本申请所述扩散层140仅覆盖所述P型半导体层134，需要注意的是，图1仅示出本申请优选方案，但不仅限于此。例如：所述扩散层140可以仅覆盖所述N型半导体层132；所述扩散层140可以既覆盖所述P型半导体层134，又覆盖所述N型半导体层132。\n\n[0036]所述Micro LED晶粒还包括一保护层160，所述保护层160包覆于所述Micro LED晶粒外侧，露出所述N型电极151以及所述P型电极152的一部分。本领域技术人员可以理解的是，所述保护层160仅覆盖所述激光释放层110远离所述第一基板100的一侧。\n\n[0037]本申请实施例提到的Micro LED晶粒的尺寸为微米级，正常LED(Normal LED)的尺寸为毫米级，本申请实施例提到的Micro LED晶粒的尺寸缩小到为正常LED品粒尺寸的百分之一左右。\n\n[0038]本申请还提供一种Micro LED基板10，包括一第一基板100，所述第一基板100上设置有多个上述Micro LED晶粒。\n\n[0039]在本申请中，所述第一基板100的材料为石英、玻璃、蓝宝石、硅以及氮化镓中的至少一种；所述激光释放层110的材料为聚酰亚胺；所述弱化结构层120的材料为非晶硅、多晶硅以及含硅化合物中的至少一种；所述扩散层140的材料为氧化铟锡、氧化铟锌、氧化铟镓锌、氧化铟锡锌以及导电性高分子中的至少一种，所述保护层160的材料为本领域常见材料，本申请不再赘述。\n\n[0040]请参阅图2A至图2E以及图3，图2A至图2E为本申请实施例所提供的一种Micro LED基板的各膜层结构示意图；图3为本申请实施例所提供的一种Micro LED基板的制备方法流程图。本申请提供一种上述Micro LED基板的制备方法，其中，包括步骤：\n\n[0041]请参阅图2A以及图3，步骤S1：提供一第一基板100以及一第一临时基板200，在所述第一基板100上沉积聚酰亚胺材料，形成激光释放层110，并且在所述第一临时基板200上沉积含硅材料，经过图案化处理形成一硅结构层123；\n\n[0042]请参阅图2B以及图3，步骤S2：在所述第一临时基板200的所述硅结构层123上依次沉积磊晶层材料以及透明扩散材料，并且用UV解黏胶310贴合一第二临时基板300，然后通过激光剥离所述第一临时基板200；\n\n[0043]请参阅图2C以及图3，步骤S3：将剥离所述第一临时基板200后的硅结构层123与所述激光释放层110键合，然后移除所述UV解黏胶310以及第二临时基板300，并进行图案化处理形成形成缓冲层131、N型半导体层132、发光层133、P型半导体层134以及扩散层140；\n\n[0044]请参阅图2D以及图3，步骤S4：沉积电极材料，图案化形成N型电极151以及P型电极152，并对所述硅结构层123进行化学蚀刻，产生空洞121以及结构层122，以形成弱化结构层120；\n\n[0045]请参阅图2E以及图3，步骤S5：沉积保护材料，并经过图案化处理形成保护层160。\n\n[0046]本领域技术人员可以理解的是，本申请所述Micro LED基板并不限制为上述MicroLED基板的制备方法，若采用其他制备方法制备出本申请所述Micro LED基板，也应属于本申请保护范围。\n\n[0047]在本申请中，所述第一临时基板200的材料优选为蓝宝石，对所述第二临时基板300的材料不做限定，本领域常规材料即可。\n\n[0048]在本申请中，当将剥离所述第一临时基板200后的硅结构层123与所述激光释放层110键合后，图案化的过程中，所述激光释放层110也会相应的图案化，不再是整层覆盖于所述第一基板100上，而是对应每个所述Micro LED晶粒设置，此时，多个所述Micro LED晶粒阵列于所述第一基板100上，所述多个Micro LED晶粒的阵列方式以及间距，可以根据实际情况来自由设置，此处并不做限定。可以利用AOI(Automated Optical Inspection,自动光学检测)检查多个Micro LED晶粒的排列情况，确保多个Micro LED晶粒排列整齐，以确保后续转移的质量。\n\n[0049]在制备所述弱化结构层120层时，通过化学蚀刻，使所述硅结构层123上层的材料被反应去除，产生上层的空洞121以及下层的结构层122，由于所述空洞121的存在，可以使所述Micro LED晶粒在转移的过程中，更容易从所述第一基板100上脱离。\n\n[0050]在本申请中，所述第二临时基板300通过所述UV解黏胶310与未经图案化的所述扩散层140粘结，所述第二临时基板300可以为剥离所述第一临时基板200后的各个膜层提供一定的支撑，并且便于与所述第一基板100进行键合。键合后所述第二临时基板300通过使用特定光照时，可以从所述扩散层140上完全脱落，而所述UV解黏胶310也不会残留于所述扩散层140表面，脱落后的所述第二临时基板300通过清洗也可以回收再利用，节约了原材料的成本。\n\n[0051]本领域技术人员可以理解的是，本申请所述的Micro LED晶粒，由于每一MicroLED晶粒与所述第一基板100之间都间隔有一层激光释放层110，即所述Micro LED晶粒与所述第一基板100并非直接连接，因此在转移过程中，可以直接对所述第一基板100进行处理(例如利用激光照射所述第一基板100)，便可以使所述Micro LED晶粒从所述第一基板100脱落，达到一步转移的目的。\n\n[0052]请参阅图4以及图5，图4为本申请实施例所提供的一种Micro LED基板10与TFT基板对位连接后的结构示意图；图5为本申请实施例所提供的一种Micro LED晶粒的转移方法流程图。本申请实施例提供一种上述Micro LED晶粒转移至TFT基板的方法，包括如下步骤：\n\n[0053]步骤S1：将所述Micro LED基板10与所述TFT基板20对位连接；\n\n[0054]步骤S2：对所述Micro LED基板10进行施压，使所述弱化结构层120断裂，并移除所述第一基板120以及所述激光释放层110；\n\n[0055]步骤S3：加热使Micro LED晶粒与所述TFT基板20键合。\n\n[0056]在上述转移方法中，所述Micro LED晶粒上的N型电极151以及P型电极152分别与所述TFT基板20上的焊接凸点21对位连接，在所述焊接凸点21上涂覆有一层黏胶，当加热时，所述黏胶与所述焊接凸点21先后熔化，从而使所述Micro LED晶粒与所述TFT基板20键合。\n\n[0057]请参阅图6，图6为本申请实施例所提供的一种Micro LED晶粒的巨量修复方法流程图。本申请实施例提供一种上述Micro LED晶粒的巨量修复方法，包括如下步骤：\n\n[0058]步骤S1：对TFT基板缺陷像素的位置采用激光转移释放Micro LED基板10相应位置的Micro LED晶粒；\n\n[0059]步骤S2：将取下的Micro LED晶粒与所述TFT基板进行绑定；\n\n[0060]步骤S3：用于修复的Micro LED晶粒与所述TFT基板绑定后，吸走残留在所述MicroLED晶粒上激光释放层110薄膜。\n\n[0061]在上述巨量修复方法中，用于修复的Micro LED基板10与原本用于转移的MicroLED基板10相同，此时可以保证与所述TFT基板对位的精确度，而且所述Micro LED基板10上的每个Micro LED晶粒都是相互独立存在的，可以同时多个修复。\n\n[0062]本申请公开了一种Micro LED晶粒，位于第一基板上，每一所述Micro LED晶粒包括依次沉积的一激光释放层110、一弱化结构层120以及一磊晶层130；所述弱化结构层120包括靠近磊晶层130一侧的空洞121以及结构层122。所述Micro LED基板10包括多个设置在第一基板上的Micro LED晶粒，这种既具有弱化结构层120也具有激光释放层110的MicroLED基板10，具有选择性激光剥离功能，可以实现一步转移以及绑定后的巨量修补技术，且激光剥离后的Micro LED晶粒无需对基板进行盐酸清洗，减少了制程工艺以及对原材料的使用。由于修复时所使用的所述Micro LED基板10与一步转移时所使用的所述Micro LED基板10相同，从而规避不必要的良率损失。\n\n[0063]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0064]以上对本申请实施例所提供的Micro LED晶粒、Micro LED基板及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种Micro LED及其制备方法。\n\n背景技术\n\n[0002]Micro LED(微型发光二极管)是新一代显示技术,比现有的OLED(有机发光二极管)技术亮度更高、发光效率更好、但功耗更低。Micro LED技术，将LED结构设计进行薄膜化、微小化、阵列化,其尺寸仅在1～10um等级左右。Micro LED最大的优势来自于微米等级的间距,每一点像素(pixel)都能定址控制及单点驱动发光、寿命长、应用范畴广。且封装要求低，更容易实现柔性及无缝拼接显示，是未来极具有发展潜力的未来显示器。\n\n[0003]但限制Micro LED显示技术发展的瓶颈主要包括巨量转移技术。巨量转移技术即如何将大量微小尺度的Micro LED晶粒转移到大尺寸的转移板上，是Micro LED产品量产化的重要技术，如何保证巨量转移技术的低成本和高良率，是目前主要研究的技术问题。现有转移技术方案目前转移制程多，制程复杂，对原材料的需求量较大，制作成本高昂。\n\n[0004]因此，现有技术存在缺陷，急需改进。\n\n发明内容\n\n[0005]本申请的目的在于提供一种Micro LED及其制备方法，以解决现有技术中转移制程复杂，制作成本高昂的问题，从而提高生产率。\n\n[0006]为了解决上述问题，本申请提供一种Micro LED晶粒，所述Micro LED晶粒包括依次设置在第一基板上的一激光释放层、一弱化结构层以及一磊晶层；其中，所述弱化结构层包括靠近磊晶层一侧的空洞以及结构层。\n\n[0007]在一些实施例中，所述磊晶层包括依次沉积的一缓冲层、一N型半导体层、一发光层以及一P型半导体层，其中，所述缓冲层覆盖所述激光释放层以及弱化结构层。\n\n[0008]在一些实施例中，所述Micro LED晶粒还包括一N型电极以及一P型电极，所述N型电极与所述N型半导体层接触，所述P型电极与所述P型半导体层接触。\n\n[0009]在一些实施例中，所述Micro LED晶粒还包括一扩散层，所述扩散层覆盖所述P型半导体层，所述P型电极与所述扩散层接触。\n\n[0010]在一些实施例中，所述Micro LED晶粒还包括一保护层，所述保护层包覆于所述Micro LED单元外侧，露出所述N型电极以及所述P型电极的一部分。\n\n[0011]在一些实施例中，所述激光释放层的材料为聚酰亚胺。\n\n[0012]在一些实施例中，所述弱化结构层的材料为非晶硅、多晶硅以及含硅化合物中的至少一种。\n\n[0013]在一些实施例中，所述扩散层的材料为氧化铟锡、氧化铟锌、氧化铟镓锌、氧化铟锡锌以及导电性高分子中的至少一种。\n\n[0014]本申请还提供一种Micro LED基板，所述Micro LED基板包括第一基板，所述第一基板上设置有多个上述的Micro LED晶粒。\n\n[0015]本申请还提供一种上述Micro LED基板的制备方法，包括步骤：\n\n[0016]提供一第一基板以及一第一临时基板，在所述第一基板上沉积聚酰亚胺材料，形成激光释放层，并且在所述第一临时基板上沉积含硅材料，经过图案化处理形成一硅结构层；\n\n[0017]在所述第一临时基板的所述硅结构层上依次沉积磊晶层材料以及透明扩散材料，并且用UV解黏胶贴合一第二临时基板，然后通过激光剥离所述第一临时基板；\n\n[0018]将剥离所述第一临时基板后的硅结构层与所述激光释放层键合，然后移除所述UV解黏胶以及第二临时基板，并进行图案化处理形成形成缓冲层、N型半导体层、发光层、P型半导体层以及扩散层；\n\n[0019]沉积电极材料，图案化形成N型电极以及P型电极，并对所述硅结构层进行化学蚀刻，产生空洞以及结构层，以形成弱化结构层；\n\n[0020]沉积保护材料，并经过图案化处理形成保护层。\n\n[0021]本申请公开了一种Micro LED晶粒、Micro LED基板及其制备方法。所述Micro LED晶粒包括依次设置在第一基板上的一激光释放层、一弱化结构层以及一磊晶层；其中，所述弱化结构层包括靠近磊晶层一侧的空洞以及结构层。所述Micro LED基板包括多个设置在第一基板上的Micro LED晶粒，这种既具有弱化结构也具有激光释放层的Micro LED基板，具有选择性激光剥离功能，可以实现一步转移以及绑定后的巨量修补技术，且激光剥离后的Micro LED晶粒无需对基板进行盐酸清洗，减少了制程工艺以及对原材料的使用。由于修复时所使用的Micro LED基板与一步转移时的Micro LED基板相同，从而规避不必要的良率损失。\n\n附图说明\n\n[0022]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0023]图1为本申请实施例所提供的一种Micro LED基板的结构示意图。\n\n[0024]图2A至图2E为本申请实施例所提供的一种Micro LED基板的各膜层结构示意图。\n\n[0025]图3为本申请实施例所提供的一种Micro LED基板的制备方法流程图。\n\n[0026]图4为本申请实施例所提供的一种Micro LED基板与TFT基板对位连接后的结构示意图。\n\n[0027]图5为本申请实施例所提供的一种Micro LED晶粒的转移方法流程图。\n\n[0028]图6为本申请实施例所提供的一种Micro LED晶粒的巨量修复方法流程图。\n\n具体实施方式\n\n[0029]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0030]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0031]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0032]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0033]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0034]具体的，请参阅图1，图1为本申请实施例所提供的一种Micro LED基板的结构示意图。本申请提供一种Micro LED晶粒，位于第一基板100上，所述Micro LED晶粒包括依次沉积的一激光释放层110、一弱化结构层120以及一磊晶层130；其中，所述弱化结构层120包括靠近磊晶层一侧的空洞121以及结构层122。所述磊晶层130包括依次沉积的一缓冲层131、一N型半导体层132、一发光层133以及一P型半导体层134，其中，所述缓冲层134覆盖所述激光释放层110以及弱化结构层120。所述Micro LED晶粒还包括一N型电极151以及一P型电极152，所述N型电极151与所述N型半导体层132接触，所述P型电极152与所述P型半导体层134接触。\n\n[0035]在本申请中，所述Micro LED晶粒还包括一扩散层140，所述扩散层140覆盖所述P型半导体层134，所述P型电极152与所述扩散层140接触。本领域技术人员可以理解的是，当设置有所述扩散层140时，所述P型电极152与所述扩散层140直接接触，通过所述扩散层140与所述P型半导体层134连通。所述扩散层140还可以覆盖所述N型半导体层132，此时，所述N型电极151与所述扩散层140直接接触，通过所述扩散层140与所述N型半导体层132连通。优选地，本申请所述扩散层140仅覆盖所述P型半导体层134，需要注意的是，图1仅示出本申请优选方案，但不仅限于此。例如：所述扩散层140可以仅覆盖所述N型半导体层132；所述扩散层140可以既覆盖所述P型半导体层134，又覆盖所述N型半导体层132。\n\n[0036]所述Micro LED晶粒还包括一保护层160，所述保护层160包覆于所述Micro LED晶粒外侧，露出所述N型电极151以及所述P型电极152的一部分。本领域技术人员可以理解的是，所述保护层160仅覆盖所述激光释放层110远离所述第一基板100的一侧。\n\n[0037]本申请实施例提到的Micro LED晶粒的尺寸为微米级，正常LED(Normal LED)的尺寸为毫米级，本申请实施例提到的Micro LED晶粒的尺寸缩小到为正常LED品粒尺寸的百分之一左右。\n\n[0038]本申请还提供一种Micro LED基板10，包括一第一基板100，所述第一基板100上设置有多个上述Micro LED晶粒。\n\n[0039]在本申请中，所述第一基板100的材料为石英、玻璃、蓝宝石、硅以及氮化镓中的至少一种；所述激光释放层110的材料为聚酰亚胺；所述弱化结构层120的材料为非晶硅、多晶硅以及含硅化合物中的至少一种；所述扩散层140的材料为氧化铟锡、氧化铟锌、氧化铟镓锌、氧化铟锡锌以及导电性高分子中的至少一种，所述保护层160的材料为本领域常见材料，本申请不再赘述。\n\n[0040]请参阅图2A至图2E以及图3，图2A至图2E为本申请实施例所提供的一种Micro LED基板的各膜层结构示意图；图3为本申请实施例所提供的一种Micro LED基板的制备方法流程图。本申请提供一种上述Micro LED基板的制备方法，其中，包括步骤：\n\n[0041]请参阅图2A以及图3，步骤S1：提供一第一基板100以及一第一临时基板200，在所述第一基板100上沉积聚酰亚胺材料，形成激光释放层110，并且在所述第一临时基板200上沉积含硅材料，经过图案化处理形成一硅结构层123；\n\n[0042]请参阅图2B以及图3，步骤S2：在所述第一临时基板200的所述硅结构层123上依次沉积磊晶层材料以及透明扩散材料，并且用UV解黏胶310贴合一第二临时基板300，然后通过激光剥离所述第一临时基板200；\n\n[0043]请参阅图2C以及图3，步骤S3：将剥离所述第一临时基板200后的硅结构层123与所述激光释放层110键合，然后移除所述UV解黏胶310以及第二临时基板300，并进行图案化处理形成形成缓冲层131、N型半导体层132、发光层133、P型半导体层134以及扩散层140；\n\n[0044]请参阅图2D以及图3，步骤S4：沉积电极材料，图案化形成N型电极151以及P型电极152，并对所述硅结构层123进行化学蚀刻，产生空洞121以及结构层122，以形成弱化结构层120；\n\n[0045]请参阅图2E以及图3，步骤S5：沉积保护材料，并经过图案化处理形成保护层160。\n\n[0046]本领域技术人员可以理解的是，本申请所述Micro LED基板并不限制为上述MicroLED基板的制备方法，若采用其他制备方法制备出本申请所述Micro LED基板，也应属于本申请保护范围。\n\n[0047]在本申请中，所述第一临时基板200的材料优选为蓝宝石，对所述第二临时基板300的材料不做限定，本领域常规材料即可。\n\n[0048]在本申请中，当将剥离所述第一临时基板200后的硅结构层123与所述激光释放层110键合后，图案化的过程中，所述激光释放层110也会相应的图案化，不再是整层覆盖于所述第一基板100上，而是对应每个所述Micro LED晶粒设置，此时，多个所述Micro LED晶粒阵列于所述第一基板100上，所述多个Micro LED晶粒的阵列方式以及间距，可以根据实际情况来自由设置，此处并不做限定。可以利用AOI(Automated Optical Inspection,自动光学检测)检查多个Micro LED晶粒的排列情况，确保多个Micro LED晶粒排列整齐，以确保后续转移的质量。\n\n[0049]在制备所述弱化结构层120层时，通过化学蚀刻，使所述硅结构层123上层的材料被反应去除，产生上层的空洞121以及下层的结构层122，由于所述空洞121的存在，可以使所述Micro LED晶粒在转移的过程中，更容易从所述第一基板100上脱离。\n\n[0050]在本申请中，所述第二临时基板300通过所述UV解黏胶310与未经图案化的所述扩散层140粘结，所述第二临时基板300可以为剥离所述第一临时基板200后的各个膜层提供一定的支撑，并且便于与所述第一基板100进行键合。键合后所述第二临时基板300通过使用特定光照时，可以从所述扩散层140上完全脱落，而所述UV解黏胶310也不会残留于所述扩散层140表面，脱落后的所述第二临时基板300通过清洗也可以回收再利用，节约了原材料的成本。\n\n[0051]本领域技术人员可以理解的是，本申请所述的Micro LED晶粒，由于每一MicroLED晶粒与所述第一基板100之间都间隔有一层激光释放层110，即所述Micro LED晶粒与所述第一基板100并非直接连接，因此在转移过程中，可以直接对所述第一基板100进行处理(例如利用激光照射所述第一基板100)，便可以使所述Micro LED晶粒从所述第一基板100脱落，达到一步转移的目的。\n\n[0052]请参阅图4以及图5，图4为本申请实施例所提供的一种Micro LED基板10与TFT基板对位连接后的结构示意图；图5为本申请实施例所提供的一种Micro LED晶粒的转移方法流程图。本申请实施例提供一种上述Micro LED晶粒转移至TFT基板的方法，包括如下步骤：\n\n[0053]步骤S1：将所述Micro LED基板10与所述TFT基板20对位连接；\n\n[0054]步骤S2：对所述Micro LED基板10进行施压，使所述弱化结构层120断裂，并移除所述第一基板120以及所述激光释放层110；\n\n[0055]步骤S3：加热使Micro LED晶粒与所述TFT基板20键合。\n\n[0056]在上述转移方法中，所述Micro LED晶粒上的N型电极151以及P型电极152分别与所述TFT基板20上的焊接凸点21对位连接，在所述焊接凸点21上涂覆有一层黏胶，当加热时，所述黏胶与所述焊接凸点21先后熔化，从而使所述Micro LED晶粒与所述TFT基板20键合。\n\n[0057]请参阅图6，图6为本申请实施例所提供的一种Micro LED晶粒的巨量修复方法流程图。本申请实施例提供一种上述Micro LED晶粒的巨量修复方法，包括如下步骤：\n\n[0058]步骤S1：对TFT基板缺陷像素的位置采用激光转移释放Micro LED基板10相应位置的Micro LED晶粒；\n\n[0059]步骤S2：将取下的Micro LED晶粒与所述TFT基板进行绑定；\n\n[0060]步骤S3：用于修复的Micro LED晶粒与所述TFT基板绑定后，吸走残留在所述MicroLED晶粒上激光释放层110薄膜。\n\n[0061]在上述巨量修复方法中，用于修复的Micro LED基板10与原本用于转移的MicroLED基板10相同，此时可以保证与所述TFT基板对位的精确度，而且所述Micro LED基板10上的每个Micro LED晶粒都是相互独立存在的，可以同时多个修复。\n\n[0062]本申请公开了一种Micro LED晶粒，位于第一基板上，每一所述Micro LED晶粒包括依次沉积的一激光释放层110、一弱化结构层120以及一磊晶层130；所述弱化结构层120包括靠近磊晶层130一侧的空洞121以及结构层122。所述Micro LED基板10包括多个设置在第一基板上的Micro LED晶粒，这种既具有弱化结构层120也具有激光释放层110的MicroLED基板10，具有选择性激光剥离功能，可以实现一步转移以及绑定后的巨量修补技术，且激光剥离后的Micro LED晶粒无需对基板进行盐酸清洗，减少了制程工艺以及对原材料的使用。由于修复时所使用的所述Micro LED基板10与一步转移时所使用的所述Micro LED基板10相同，从而规避不必要的良率损失。\n\n[0063]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0064]以上对本申请实施例所提供的Micro LED晶粒、Micro LED基板及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10873, 23927, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及Mini-LED显示面板、Mini-LED显示模组及Mini-LED拼接屏。\n\n背景技术\n\n[0002]拼接多个显示屏幕是实现超大屏幕显示的一种主要方式，但是拼接显示屏幕通常存在拼缝的问题，如何降低拼缝大小以改善整体显示效果，已经成为业界热门的研究对象。\n\n[0003]对于Mini-LED显示器来说，改善拼缝有助于提升显示效果。通常Mini-LED阵列是由多个Mini-LED芯片阵列排布而成，且Mini-LED阵列设在显示面板的中心以用于显示，控制Mini-LED芯片的多个走线则延伸到显示面板的边缘区域以和驱动电路芯片或外部的电路板进行绑定(bonding)，因此通常在显示面板的四个边缘区域(Mini-LED阵列的四周，即Mini-LED阵列的上、下、左、右四个方位)会预留足够空间用于绑定。如图1所示，基板800具有两条水平边810和两条竖直边820；Mini-LED阵列900设在基板800的中心(图中仅示出部分Mini-LED阵列作为示例)，Mini-LED阵列900对应区域为显示区830；其中Mini-LED芯片911一般呈长方形，具有两个长边和两个短边；通常每个Mini-LED芯片911采用竖置方式设在基板800上，即每个所述Mini-LED芯911的长边与所述基板800的竖直边820平行、且短边与所述基板800的水平边810平行，并且在Mini-LED阵列900四周预留足够的区域用于绑定，如图1所示的四个绑定区840。但是此种方案对于拼接屏的无缝拼接极为不利，如图2所示为多块图1所示显示面拼接后的正面结构示意图(显示区830所在面)，在拼接时相邻两块拼接单元之间的距离越小，拼接屏的显示效果越好，但是为了满足基板四周的绑定需求，二者之间的距离减小到一定程度时则无法继续减小，使得无法达到更小拼缝或无缝拼接的目的，极大地限制了小间距(pitch，相邻像素的距离)的Mini-LED显示的开发。\n\n发明内容\n\n[0004]本发明实施例提供一种Mini-LED显示面板、Mini-LED显示模组及Mini-LED拼接屏，旨在减小Mini-LED拼接屏的拼缝，尤其是横向相邻两块显示模组之间的距离，提升拼接屏的整体显示效果。\n\n[0005]第一方面，本发明提供了一种Mini-LED显示面板，包括一基板，所述基板具有顶面和底面，所述顶面具有两条水平边和两条竖直边，所述Mini-LED显示面板还包括：\n\n[0006]显示区，形成于所述基板的顶面，且设有Mini-LED阵列，所述Mini-LED阵列由多个Mini-LED芯片呈阵列排布而成；及\n\n[0007]绑定区，形成于所述基板的顶面，且位于所述显示区的一侧，且靠近所述基板的其中一条水平边；\n\n[0008]其中，每一所述Mini-LED芯片呈长方形，且具有两条长边和两条短边，所述长边与所述基板顶面的水平边呈平行，所述短边与所述基板顶面的竖直边呈平行。\n\n[0009]进一步地，所述Mini-LED阵列由多个Mini-LED阵列子单元呈阵列排布而成；每一所述Mini-LED阵列子单元包含三个Mini-LED芯片；所述三个Mini-LED芯片分别被配置为发出红光、绿光和蓝光。\n\n[0010]更进一步地，在每一所述Mini-LED阵列子单元中，所述三个Mini-LED芯片横向排列成一排。\n\n[0011]更进一步地，在每一所述Mini-LED阵列子单元中，所述三个Mini-LED芯片纵向排列成一列。\n\n[0012]更进一步地，在所述Mini-LED阵列中，每两个横向相邻的所述Mini-LED阵列子单元之间的横向间距均相等，且每两个纵向相邻的所述Mini-LED阵列子单元之间的纵向间距均相等；在每一所述Mini-LED阵列子单元中，每两个相邻的所述Mini-LED芯片之间的间距均相等。\n\n[0013]进一步地，所述Mini-LED显示面板还包括封装层，覆盖所述Mini-LED阵列。\n\n[0014]进一步地，所述Mini-LED显示面板还包括印刷电路板，驱动芯片和柔性线路板；其中，所述驱动芯片通过薄膜覆晶方式设置于所述柔性线路板上，再通过所述柔性线路板连接至所述绑定区；所述柔性线路板连接至所述印刷电路板。\n\n[0015]更进一步地，通过弯折所述柔性线路板将所述印刷电路板和所述驱动芯片设置在所述基板的底面。\n\n[0016]第二方面，本发明还提供了一种Mini-LED显示模组，其包括如上任意一种所述的Mini-LED显示面板。\n\n[0017]第三方面，本发明还提供了一种Mini-LED拼接屏，其包括拼接组装的多个如上任意一种所述的Mini-LED显示模组。\n\n[0018]进一步地，所述印刷电路板和所述驱动芯片连接所述柔性线路板并通过弯折所述柔性线路板设置在所述基板的底面。\n\n[0019]与现有技术相比，本发明将Mini-LED芯片横置，使得显示面板的纵向空间具有更多的剩余空间，剩余的纵向空间可以用于绑定等，为实现单侧绑定创造有利条件；同时，将绑定区只设置在基板的单侧以进行单侧绑定，而在基板的其他边侧则无需预留绑定区，这样可以使得显示区扩大到基板的边缘，在相邻两块显示面板进行横向拼接时，两块相邻显示面板边缘处的两个像素(Mini-LED阵列子单元)之间的距离(pitch)也可以设置的更近，更利于制作更小间距(pitch)的拼接屏；并且在进行横向拼接时，在没有边侧绑定需求的限制下，相邻两个显示面板之间的横向距离则可以得到最大程度的减小，进而实现横向无缝拼接；而进行纵向拼接时，相邻两个显示面板之间的纵向距离也只需要预留一块显示面板实现单侧绑定需求的距离即可，因此本发明可以使得Mini-LED拼接屏实现更小缝隙的拼接。本发明方案适于制作间距pitch≤1.6mm的拼接屏。\n\n附图说明\n\n[0020]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0021]图1为现有技术中单块显示面板的结构示意图。\n\n[0022]图2为多块图1所示的显示面板拼接后的正面结构示意图(显示面)。\n\n[0023]图3为本发明实施例单块显示面板的结构示意图。\n\n[0024]图4为本发明另一实施例显示区的Mini-LED阵列排布的示意图。\n\n[0025]图5为图3所示显示面板中部分Mini-LED阵列的放大图。\n\n[0026]图6为图3所示显示面板中Mini-LED阵列与基板边缘距离的示意图。\n\n[0027]图7为本发明实施例的多块图3所示显示面板拼接后的正面结构示意图(显示面)。\n\n[0028]图8为本发明实施例的多块图3所示显示面板拼接后的背面结构示意图。\n\n[0029]图9为本发明实施例沿图7中X方向的纵截面局部示意图。\n\n[0030]图10为本发明实施例沿图7中Y方向的纵截面局部示意图。\n\n具体实施方式\n\n[0031]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0032]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0033]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0034]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0035]下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0036]请参阅图3至图10(图中仅示意所述Mini-LED阵列200的一部分，其余部分已省略)，本发明实施例提供了一种Mini-LED显示面板，其可以用于制作Mini-LED直显的拼接屏，尤其是AM驱动(Active Matrix，有源驱动)Mini-LED直显的拼接屏。该Mini-LED显示面板包括一基板100，一显示区130和一绑定区140。\n\n[0037]如图3所示，所述基板100具有顶面(即A面)和底面(即D面)；所述顶面呈长方形(包括正方形)，具有两条水平边110和两条竖直边120；所述底面与所述顶面的形状和尺寸完全相同。需要说明的是，所述两条水平边110与所述两条竖直边120互相垂直，其中所述两条水平边110是指将基板定位后，沿着水平方向放置的两条边。所述基板100可以采用玻璃基板。本实施例中以下内容提及的“正面”、“显示面”均指显示区130所在的面，即基板100的顶面(A面)；“背面”则指基板100的底面(D面)。\n\n[0038]如图3所示，所述显示区130形成于所述基板100的顶面，所述显示区130内设有Mini-LED阵列200；所述Mini-LED阵列200由多个Mini-LED芯片211呈阵列排布而成；其中，每一所述Mini-LED芯片211呈长方形，且具有两条长边和两条短边，所述长边与所述基板100顶面的水平边110呈平行，所述短边与所述基板100顶面的竖直边120呈平行，在本文中将Mini-LED芯片211的此种放置方式称为“横置”。本实施例将Mini-LED芯片211横置，使得显示面板的纵向(沿Y方向)具有更多的剩余空间，剩余的纵向空间可以用于绑定和布线等，为实现单侧绑定创造有利条件。在一实施例中，所述显示区130(即所述Mini-LED阵列200)的边缘靠近基板100的两条竖直边120以及靠近远离所述绑定区140一侧的那条水平边110，以使所述Mini-LED阵列200最大程度地利用基板100的横向空间(X方向)。\n\n[0039]在一实施例中，如图3所示，所述Mini-LED阵列200由多个Mini-LED阵列子单元210呈阵列排布而成；每一所述Mini-LED阵列子单元210包含三个Mini-LED芯片211；所述三个Mini-LED芯片211分别被配置为发出红光(R)、绿光(G)和蓝光(B)。具体地，所述三个Mini-LED芯片211为RGB Mini-LED芯片。采用三色RGB Mini-LED芯片可以实现全彩显示。需要说明的是，所述Mini-LED芯片211的数量以及具体Mini-LED阵列200的大小可以根据所要制作的屏幕的分辨率决定，本发明在此不作具体限定。\n\n[0040]在一实施例中，如图3所示，在每一所述Mini-LED阵列子单元210中，所述三个Mini-LED芯片211横向排列成一排。需要注意得是，每个所述Mini-LED芯片211均采用横置方式。在另一实施例中，如图4所示，在每一所述Mini-LED阵列子单元210中，所述三个Mini-LED芯片211纵向排列成一列。同样地，每个所述Mini-LED芯片211均采用横置方式。\n\n[0041]在一实施例中，如图5所示，在所述Mini-LED阵列200中，每两个横向相邻(X方向)的所述Mini-LED阵列子单元210之间的横向间距(即图5所示距离n)均相等。在一实施例中，每两个纵向相邻(Y方向)的所述Mini-LED阵列子单元210之间的纵向间距(即图5所示距离m)还可以均相等。在一实施例中，在每一所述Mini-LED阵列子单元210中，每两个相邻的所述Mini-LED芯片211之间的间距(即图5所示距离h)还可以均相等。需要说明得是，横向间距m可以与纵向间距n相等(即m＝n)，另外，每两个相邻的所述Mini-LED芯片211之间的间距h还可以与横向间距m、及纵向间距n均相等(即m＝n＝h)。按照上述几种方式排布Mini-LED芯片211可以使得显示面板像素分布更加均匀，具有更好的显示效果。\n\n[0042]如图3所示，所述绑定区140形成于所述基板100的顶面，且位于所述显示区130的一侧、且靠近所述基板100的其中一条水平边110(即远离所述显示区130的那条水平边110)，即所述显示区130和所述绑定区140纵向排布在所述基板100的顶面上。在一实施例中，如图3所示，所述显示区130在上，且所述绑定区140在下，即所述绑定区140位于所述显示区130下方的一侧(Y方向)。在另一实施例中，所述显示区130在下，且所述绑定区140在上，即所述绑定区140位于所述显示区130上方的一侧(Y方向)。本实施例只在基板100的单侧设置绑定区140，而在基板100的其他边侧无需设置绑定区，这样所述Mini-LED阵列200则可以扩大到基板100的边缘，进而使得Mini-LED阵列200的边缘可以较大程度地的靠近基板100的两条竖直边120，可以为Mini-LED阵列200提供更多的横向(X方向)空间，利于Mini-LED芯片211的横置。\n\n[0043]如图3所示，在一实施例中，所述Mini-LED显示面板还包括印刷电路板300(Printed Circuit Board，PCB)，驱动芯片400和柔性线路板500；其中，所述驱动芯片400通过薄膜覆晶(chip on film，COF)方式设置于所述柔性线路板500上，再通过所述柔性线路板500连接至所述绑定区140，与所述Mini-LED阵列200电连接；所述柔性线路板500连接至所述印刷电路板300。具体地，所述显示面板包括一印刷电路板300，多个驱动芯片400和多个柔性线路板500；所述多个柔性线路板500的数量与所述驱动芯片400的数量相同；其中每一驱动芯片400通过COF方式设在一个对应的柔性线路板500上；且每一所述柔性线路板500的一端连接至所述基板100顶面的绑定区140，另一端与所述印刷电路板300连接；且所有所述柔性线路板500均连接至所述印刷电路板300上。由于柔性线路板500呈柔性，因此可以通过弯折所述柔性线路板500将所述印刷电路板300和所述驱动芯片400设置在所述基板100的底面。所述柔性线路板500可以为XD板(X-BOARD)。需要说明的是，所述柔性线路板500、驱动芯片400和印刷电路板300的数量可以根据所要制作的屏幕的分辨率等条件确定，本发明在此不作具体限制。\n\n[0044]如图9和图10所示，在一实施例中，所述Mini-LED显示面板还包括一封装层600，覆盖在所述Mini-LED阵列200之上。所述封装层600可以为环氧树脂或有机硅树脂，用于保护和加固Mini-LED芯片211。\n\n[0045]本实施例方案适于制作间距pitch≤1.6mm的拼接屏，以间距pitch＝1.6mm为例说明所示Mini-LED阵列200与基板100边缘距离的设计方法，请参考图6和图9所示，所述Mini-LED阵列200与基板100的其中一条水平边110之间的间距S3可以根据切割工艺的公差设置，如一般可以设置在50至100微米之间；所述Mini-LED阵列200与两个竖直边120之间的间距S1，S2则可以根据所要制作的pitch大小(如1.6mm)减去Mini-LED阵列子单元210的尺寸(所选用的三个所述Mini-LED芯片211排列后的尺寸)以及减去x1(横向无缝拼接时则为0)，若S1＝S2，则再取一半(除以2)即得到S1或S2。通常在制作拼接屏时为了使像素均匀以具有更好的显示效果，如图9所示的间距P也可以设计成同等pitch大小(如1.6mm)。另外，需要说明的是，S1和S2大多情况下是相等的，但是也不排除二者不等的情况，该方案同样适用于本发明。\n\n[0046]本实施例还提供了一种Mini-LED显示模组，该Mini-LED显示模组包括如上所述任意一种的Mini-LED显示面板。\n\n[0047]如图7-图10所示，本实施例还提供了一种Mini-LED拼接屏，尤其是AM驱动Mini-LED直显的拼接屏，其包括拼接组装的多个如上所述任意一种的Mini-LED显示模组。本发明实施例中，每个Mini-LED显示模组可看作一个拼接单元，Mini-LED拼接屏则由多个拼接单元拼接组装而成，而每个Mini-LED显示模组中均包括Mini-LED显示面板。\n\n[0048]如图8所示，在所述拼接组装时，所述印刷电路板300和所述驱动芯片400连接所述柔性线路板500并通过弯折所述柔性线路板500设置在所述基板100的底面。\n\n[0049]如图7至图10所示，每个所述基板100上的绑定区140只设置在基板100的单侧，并与印刷电路板300、所述驱动芯片400和柔性线路板500进行单侧绑定，而在基板100的其他边侧无需预留绑定区140以进行其他边侧的绑定，这样使得X方向具有更多的空间用于排布所述Mini-LED阵列200，进而所述显示区130(Mini-LED阵列200)则可以扩大到基板100的边缘，即Mini-LED阵列200的边缘能够最大程度地的靠近基板100的两条竖直边120。如图9所示，由所述三个Mini-LED芯片211横向排列成一排构成一个所述Mini-LED阵列子单元210，若将一个所述Mini-LED阵列子单元210看作1个像素，则相邻两块显示面板上的相邻的Mini-LED阵列子单元210之间的距离即为Pitch(两个相邻像素之间的距离，如图9所示P)，而由于所述Mini-LED阵列200的边缘可以较大程度的靠近基板100的两条竖直边120，使得在进行横向拼接(X方向)时，两块相邻显示面板竖直边处的两个相邻的Mini-LED阵列子单元210之间的距离也可以设置的更近，这样更加有利于制作小Pitch(两个相邻的像素之间的距)的拼接屏。另外，如图9所示，在将两块显示面板进行横向拼接(X方向)时，在没有边侧绑定需求的限制下，相邻两个显示面板之间的横向距离(图9所示x1，物理缝隙)则可以得到最大程度的减小，直至减小至0(即x1＝0)，进而实现横向无缝拼接(X方向)。如图10所示(图10中只显示部分柔性线路板500，位于基板100下的部分柔性线路板500、驱动芯片400和印刷电路板300未示出)，进行纵向拼接(沿Y方向)时，相邻两个显示面板之间的纵向距离(图10所示y1)只需要预留一块显示面板实现单侧绑定需求的距离即可。这样可以使得Mini-LED拼接屏实现更小缝隙的拼接。\n\n[0050]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0051]以上对本发明实施例进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及Mini-LED显示面板、Mini-LED显示模组及Mini-LED拼接屏。\n\n背景技术\n\n[0002]拼接多个显示屏幕是实现超大屏幕显示的一种主要方式，但是拼接显示屏幕通常存在拼缝的问题，如何降低拼缝大小以改善整体显示效果，已经成为业界热门的研究对象。\n\n[0003]对于Mini-LED显示器来说，改善拼缝有助于提升显示效果。通常Mini-LED阵列是由多个Mini-LED芯片阵列排布而成，且Mini-LED阵列设在显示面板的中心以用于显示，控制Mini-LED芯片的多个走线则延伸到显示面板的边缘区域以和驱动电路芯片或外部的电路板进行绑定(bonding)，因此通常在显示面板的四个边缘区域(Mini-LED阵列的四周，即Mini-LED阵列的上、下、左、右四个方位)会预留足够空间用于绑定。如图1所示，基板800具有两条水平边810和两条竖直边820；Mini-LED阵列900设在基板800的中心(图中仅示出部分Mini-LED阵列作为示例)，Mini-LED阵列900对应区域为显示区830；其中Mini-LED芯片911一般呈长方形，具有两个长边和两个短边；通常每个Mini-LED芯片911采用竖置方式设在基板800上，即每个所述Mini-LED芯911的长边与所述基板800的竖直边820平行、且短边与所述基板800的水平边810平行，并且在Mini-LED阵列900四周预留足够的区域用于绑定，如图1所示的四个绑定区840。但是此种方案对于拼接屏的无缝拼接极为不利，如图2所示为多块图1所示显示面拼接后的正面结构示意图(显示区830所在面)，在拼接时相邻两块拼接单元之间的距离越小，拼接屏的显示效果越好，但是为了满足基板四周的绑定需求，二者之间的距离减小到一定程度时则无法继续减小，使得无法达到更小拼缝或无缝拼接的目的，极大地限制了小间距(pitch，相邻像素的距离)的Mini-LED显示的开发。\n\n发明内容\n\n[0004]本发明实施例提供一种Mini-LED显示面板、Mini-LED显示模组及Mini-LED拼接屏，旨在减小Mini-LED拼接屏的拼缝，尤其是横向相邻两块显示模组之间的距离，提升拼接屏的整体显示效果。\n\n[0005]第一方面，本发明提供了一种Mini-LED显示面板，包括一基板，所述基板具有顶面和底面，所述顶面具有两条水平边和两条竖直边，所述Mini-LED显示面板还包括：\n\n[0006]显示区，形成于所述基板的顶面，且设有Mini-LED阵列，所述Mini-LED阵列由多个Mini-LED芯片呈阵列排布而成；及\n\n[0007]绑定区，形成于所述基板的顶面，且位于所述显示区的一侧，且靠近所述基板的其中一条水平边；\n\n[0008]其中，每一所述Mini-LED芯片呈长方形，且具有两条长边和两条短边，所述长边与所述基板顶面的水平边呈平行，所述短边与所述基板顶面的竖直边呈平行。\n\n[0009]进一步地，所述Mini-LED阵列由多个Mini-LED阵列子单元呈阵列排布而成；每一所述Mini-LED阵列子单元包含三个Mini-LED芯片；所述三个Mini-LED芯片分别被配置为发出红光、绿光和蓝光。\n\n[0010]更进一步地，在每一所述Mini-LED阵列子单元中，所述三个Mini-LED芯片横向排列成一排。\n\n[0011]更进一步地，在每一所述Mini-LED阵列子单元中，所述三个Mini-LED芯片纵向排列成一列。\n\n[0012]更进一步地，在所述Mini-LED阵列中，每两个横向相邻的所述Mini-LED阵列子单元之间的横向间距均相等，且每两个纵向相邻的所述Mini-LED阵列子单元之间的纵向间距均相等；在每一所述Mini-LED阵列子单元中，每两个相邻的所述Mini-LED芯片之间的间距均相等。\n\n[0013]进一步地，所述Mini-LED显示面板还包括封装层，覆盖所述Mini-LED阵列。\n\n[0014]进一步地，所述Mini-LED显示面板还包括印刷电路板，驱动芯片和柔性线路板；其中，所述驱动芯片通过薄膜覆晶方式设置于所述柔性线路板上，再通过所述柔性线路板连接至所述绑定区；所述柔性线路板连接至所述印刷电路板。\n\n[0015]更进一步地，通过弯折所述柔性线路板将所述印刷电路板和所述驱动芯片设置在所述基板的底面。\n\n[0016]第二方面，本发明还提供了一种Mini-LED显示模组，其包括如上任意一种所述的Mini-LED显示面板。\n\n[0017]第三方面，本发明还提供了一种Mini-LED拼接屏，其包括拼接组装的多个如上任意一种所述的Mini-LED显示模组。\n\n[0018]进一步地，所述印刷电路板和所述驱动芯片连接所述柔性线路板并通过弯折所述柔性线路板设置在所述基板的底面。\n\n[0019]与现有技术相比，本发明将Mini-LED芯片横置，使得显示面板的纵向空间具有更多的剩余空间，剩余的纵向空间可以用于绑定等，为实现单侧绑定创造有利条件；同时，将绑定区只设置在基板的单侧以进行单侧绑定，而在基板的其他边侧则无需预留绑定区，这样可以使得显示区扩大到基板的边缘，在相邻两块显示面板进行横向拼接时，两块相邻显示面板边缘处的两个像素(Mini-LED阵列子单元)之间的距离(pitch)也可以设置的更近，更利于制作更小间距(pitch)的拼接屏；并且在进行横向拼接时，在没有边侧绑定需求的限制下，相邻两个显示面板之间的横向距离则可以得到最大程度的减小，进而实现横向无缝拼接；而进行纵向拼接时，相邻两个显示面板之间的纵向距离也只需要预留一块显示面板实现单侧绑定需求的距离即可，因此本发明可以使得Mini-LED拼接屏实现更小缝隙的拼接。本发明方案适于制作间距pitch≤1.6mm的拼接屏。\n\n附图说明\n\n[0020]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0021]图1为现有技术中单块显示面板的结构示意图。\n\n[0022]图2为多块图1所示的显示面板拼接后的正面结构示意图(显示面)。\n\n[0023]图3为本发明实施例单块显示面板的结构示意图。\n\n[0024]图4为本发明另一实施例显示区的Mini-LED阵列排布的示意图。\n\n[0025]图5为图3所示显示面板中部分Mini-LED阵列的放大图。\n\n[0026]图6为图3所示显示面板中Mini-LED阵列与基板边缘距离的示意图。\n\n[0027]图7为本发明实施例的多块图3所示显示面板拼接后的正面结构示意图(显示面)。\n\n[0028]图8为本发明实施例的多块图3所示显示面板拼接后的背面结构示意图。\n\n[0029]图9为本发明实施例沿图7中X方向的纵截面局部示意图。\n\n[0030]图10为本发明实施例沿图7中Y方向的纵截面局部示意图。\n\n具体实施方式\n\n[0031]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0032]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0033]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0034]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0035]下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0036]请参阅图3至图10(图中仅示意所述Mini-LED阵列200的一部分，其余部分已省略)，本发明实施例提供了一种Mini-LED显示面板，其可以用于制作Mini-LED直显的拼接屏，尤其是AM驱动(Active Matrix，有源驱动)Mini-LED直显的拼接屏。该Mini-LED显示面板包括一基板100，一显示区130和一绑定区140。\n\n[0037]如图3所示，所述基板100具有顶面(即A面)和底面(即D面)；所述顶面呈长方形(包括正方形)，具有两条水平边110和两条竖直边120；所述底面与所述顶面的形状和尺寸完全相同。需要说明的是，所述两条水平边110与所述两条竖直边120互相垂直，其中所述两条水平边110是指将基板定位后，沿着水平方向放置的两条边。所述基板100可以采用玻璃基板。本实施例中以下内容提及的“正面”、“显示面”均指显示区130所在的面，即基板100的顶面(A面)；“背面”则指基板100的底面(D面)。\n\n[0038]如图3所示，所述显示区130形成于所述基板100的顶面，所述显示区130内设有Mini-LED阵列200；所述Mini-LED阵列200由多个Mini-LED芯片211呈阵列排布而成；其中，每一所述Mini-LED芯片211呈长方形，且具有两条长边和两条短边，所述长边与所述基板100顶面的水平边110呈平行，所述短边与所述基板100顶面的竖直边120呈平行，在本文中将Mini-LED芯片211的此种放置方式称为“横置”。本实施例将Mini-LED芯片211横置，使得显示面板的纵向(沿Y方向)具有更多的剩余空间，剩余的纵向空间可以用于绑定和布线等，为实现单侧绑定创造有利条件。在一实施例中，所述显示区130(即所述Mini-LED阵列200)的边缘靠近基板100的两条竖直边120以及靠近远离所述绑定区140一侧的那条水平边110，以使所述Mini-LED阵列200最大程度地利用基板100的横向空间(X方向)。\n\n[0039]在一实施例中，如图3所示，所述Mini-LED阵列200由多个Mini-LED阵列子单元210呈阵列排布而成；每一所述Mini-LED阵列子单元210包含三个Mini-LED芯片211；所述三个Mini-LED芯片211分别被配置为发出红光(R)、绿光(G)和蓝光(B)。具体地，所述三个Mini-LED芯片211为RGB Mini-LED芯片。采用三色RGB Mini-LED芯片可以实现全彩显示。需要说明的是，所述Mini-LED芯片211的数量以及具体Mini-LED阵列200的大小可以根据所要制作的屏幕的分辨率决定，本发明在此不作具体限定。\n\n[0040]在一实施例中，如图3所示，在每一所述Mini-LED阵列子单元210中，所述三个Mini-LED芯片211横向排列成一排。需要注意得是，每个所述Mini-LED芯片211均采用横置方式。在另一实施例中，如图4所示，在每一所述Mini-LED阵列子单元210中，所述三个Mini-LED芯片211纵向排列成一列。同样地，每个所述Mini-LED芯片211均采用横置方式。\n\n[0041]在一实施例中，如图5所示，在所述Mini-LED阵列200中，每两个横向相邻(X方向)的所述Mini-LED阵列子单元210之间的横向间距(即图5所示距离n)均相等。在一实施例中，每两个纵向相邻(Y方向)的所述Mini-LED阵列子单元210之间的纵向间距(即图5所示距离m)还可以均相等。在一实施例中，在每一所述Mini-LED阵列子单元210中，每两个相邻的所述Mini-LED芯片211之间的间距(即图5所示距离h)还可以均相等。需要说明得是，横向间距m可以与纵向间距n相等(即m＝n)，另外，每两个相邻的所述Mini-LED芯片211之间的间距h还可以与横向间距m、及纵向间距n均相等(即m＝n＝h)。按照上述几种方式排布Mini-LED芯片211可以使得显示面板像素分布更加均匀，具有更好的显示效果。\n\n[0042]如图3所示，所述绑定区140形成于所述基板100的顶面，且位于所述显示区130的一侧、且靠近所述基板100的其中一条水平边110(即远离所述显示区130的那条水平边110)，即所述显示区130和所述绑定区140纵向排布在所述基板100的顶面上。在一实施例中，如图3所示，所述显示区130在上，且所述绑定区140在下，即所述绑定区140位于所述显示区130下方的一侧(Y方向)。在另一实施例中，所述显示区130在下，且所述绑定区140在上，即所述绑定区140位于所述显示区130上方的一侧(Y方向)。本实施例只在基板100的单侧设置绑定区140，而在基板100的其他边侧无需设置绑定区，这样所述Mini-LED阵列200则可以扩大到基板100的边缘，进而使得Mini-LED阵列200的边缘可以较大程度地的靠近基板100的两条竖直边120，可以为Mini-LED阵列200提供更多的横向(X方向)空间，利于Mini-LED芯片211的横置。\n\n[0043]如图3所示，在一实施例中，所述Mini-LED显示面板还包括印刷电路板300(Printed Circuit Board，PCB)，驱动芯片400和柔性线路板500；其中，所述驱动芯片400通过薄膜覆晶(chip on film，COF)方式设置于所述柔性线路板500上，再通过所述柔性线路板500连接至所述绑定区140，与所述Mini-LED阵列200电连接；所述柔性线路板500连接至所述印刷电路板300。具体地，所述显示面板包括一印刷电路板300，多个驱动芯片400和多个柔性线路板500；所述多个柔性线路板500的数量与所述驱动芯片400的数量相同；其中每一驱动芯片400通过COF方式设在一个对应的柔性线路板500上；且每一所述柔性线路板500的一端连接至所述基板100顶面的绑定区140，另一端与所述印刷电路板300连接；且所有所述柔性线路板500均连接至所述印刷电路板300上。由于柔性线路板500呈柔性，因此可以通过弯折所述柔性线路板500将所述印刷电路板300和所述驱动芯片400设置在所述基板100的底面。所述柔性线路板500可以为XD板(X-BOARD)。需要说明的是，所述柔性线路板500、驱动芯片400和印刷电路板300的数量可以根据所要制作的屏幕的分辨率等条件确定，本发明在此不作具体限制。\n\n[0044]如图9和图10所示，在一实施例中，所述Mini-LED显示面板还包括一封装层600，覆盖在所述Mini-LED阵列200之上。所述封装层600可以为环氧树脂或有机硅树脂，用于保护和加固Mini-LED芯片211。\n\n[0045]本实施例方案适于制作间距pitch≤1.6mm的拼接屏，以间距pitch＝1.6mm为例说明所示Mini-LED阵列200与基板100边缘距离的设计方法，请参考图6和图9所示，所述Mini-LED阵列200与基板100的其中一条水平边110之间的间距S3可以根据切割工艺的公差设置，如一般可以设置在50至100微米之间；所述Mini-LED阵列200与两个竖直边120之间的间距S1，S2则可以根据所要制作的pitch大小(如1.6mm)减去Mini-LED阵列子单元210的尺寸(所选用的三个所述Mini-LED芯片211排列后的尺寸)以及减去x1(横向无缝拼接时则为0)，若S1＝S2，则再取一半(除以2)即得到S1或S2。通常在制作拼接屏时为了使像素均匀以具有更好的显示效果，如图9所示的间距P也可以设计成同等pitch大小(如1.6mm)。另外，需要说明的是，S1和S2大多情况下是相等的，但是也不排除二者不等的情况，该方案同样适用于本发明。\n\n[0046]本实施例还提供了一种Mini-LED显示模组，该Mini-LED显示模组包括如上所述任意一种的Mini-LED显示面板。\n\n[0047]如图7-图10所示，本实施例还提供了一种Mini-LED拼接屏，尤其是AM驱动Mini-LED直显的拼接屏，其包括拼接组装的多个如上所述任意一种的Mini-LED显示模组。本发明实施例中，每个Mini-LED显示模组可看作一个拼接单元，Mini-LED拼接屏则由多个拼接单元拼接组装而成，而每个Mini-LED显示模组中均包括Mini-LED显示面板。\n\n[0048]如图8所示，在所述拼接组装时，所述印刷电路板300和所述驱动芯片400连接所述柔性线路板500并通过弯折所述柔性线路板500设置在所述基板100的底面。\n\n[0049]如图7至图10所示，每个所述基板100上的绑定区140只设置在基板100的单侧，并与印刷电路板300、所述驱动芯片400和柔性线路板500进行单侧绑定，而在基板100的其他边侧无需预留绑定区140以进行其他边侧的绑定，这样使得X方向具有更多的空间用于排布所述Mini-LED阵列200，进而所述显示区130(Mini-LED阵列200)则可以扩大到基板100的边缘，即Mini-LED阵列200的边缘能够最大程度地的靠近基板100的两条竖直边120。如图9所示，由所述三个Mini-LED芯片211横向排列成一排构成一个所述Mini-LED阵列子单元210，若将一个所述Mini-LED阵列子单元210看作1个像素，则相邻两块显示面板上的相邻的Mini-LED阵列子单元210之间的距离即为Pitch(两个相邻像素之间的距离，如图9所示P)，而由于所述Mini-LED阵列200的边缘可以较大程度的靠近基板100的两条竖直边120，使得在进行横向拼接(X方向)时，两块相邻显示面板竖直边处的两个相邻的Mini-LED阵列子单元210之间的距离也可以设置的更近，这样更加有利于制作小Pitch(两个相邻的像素之间的距)的拼接屏。另外，如图9所示，在将两块显示面板进行横向拼接(X方向)时，在没有边侧绑定需求的限制下，相邻两个显示面板之间的横向距离(图9所示x1，物理缝隙)则可以得到最大程度的减小，直至减小至0(即x1＝0)，进而实现横向无缝拼接(X方向)。如图10所示(图10中只显示部分柔性线路板500，位于基板100下的部分柔性线路板500、驱动芯片400和印刷电路板300未示出)，进行纵向拼接(沿Y方向)时，相邻两个显示面板之间的纵向距离(图10所示y1)只需要预留一块显示面板实现单侧绑定需求的距离即可。这样可以使得Mini-LED拼接屏实现更小缝隙的拼接。\n\n[0050]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0051]以上对本发明实施例进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10874, 23928, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种发光基板及显示装置。\n\n背景技术\n\n[0002]目前，对于主动式次毫米发光二极管(Mini-LED)背光模组，通常需要扫描线输入扫描信号，数据线输入数据信号，而扫描线和数据线的厚度通常只有几微米，使得扫描线和数据线的阻抗较大，进而导致靠近扫描信号输入端的扫描信号的波形和远离扫描信号输入端的扫描信号的波形会存在差异，且靠近数据信号输入端的数据信号的波形和远离数据信号输入端的数据信号的波形存在差异，信号输入端(数据信号输入端和扫描信号输入端)近端和远端的信号(数据信号以及扫描信号)的波形差异会导致近端和远端的次毫米发光二极管的亮度差异明显，特别是对于尺寸越大的背光模组，亮度差异就会越大，影响显示装置的显示效果。\n\n[0003]因此，有必要提出一种技术方案以改善背光模组的近端和远端的亮度差异导致的显示问题。\n\n发明内容\n\n[0004]本申请的目的在于提供一种发光基板及显示装置，以改善发光基板的近端和远端的亮度差异导致的显示问题。\n\n[0005]为实现上述目的，本申请提供一种发光基板，所述发光基板包括：\n\n[0006]多个数据线，每个所述数据线具有数据信号输入端；\n\n[0007]多个第一控制信号线，每个所述第一控制信号线具有第一控制信号输入端；以及\n\n[0008]多个驱动电路，每个所述驱动电路包括：\n\n[0009]发光元件；\n\n[0010]开关晶体管，所述开关晶体管的栅极与所述第一控制信号线连接，所述开关晶体管的第一极与所述数据线连接；\n\n[0011]驱动晶体管，所述驱动晶体管的栅极与所述开关晶体管的第二极连接，所述驱动晶体管的第一极或第二极中的一者与所述发光元件连接；以及\n\n[0012]控制单元，所述控制单元与所述驱动晶体管的所述第一极或所述第二极中的一者连接，所述控制单元在所述开关晶体管处于导通状态的预设时段处于截止状态，且在所述开关晶体管处于导通状态时除所述预设时段外的时段处于导通状态；\n\n[0013]其中，在从靠近所述数据信号输入端指向远离所述数据信号输入端的方向上，多个所述驱动电路的所述预设时段的时长递减；和/或，\n\n[0014]在从靠近所述第一控制信号输入端指向远离所述第一控制信号输入端的方向上，多个所述驱动电路的所述预设时段的时长递减。\n\n[0015]在上述发光基板中，所述发光基板还包括多个第二控制信号线，\n\n[0016]所述控制单元包括控制晶体管，所述控制晶体管的栅极与所述第二控制信号线连接，所述控制晶体管与所述驱动晶体管的所述第二极连接。\n\n[0017]在上述发光基板中，所述第一控制信号线用于传输第一控制信号，所述开关晶体管根据有效的所述第一控制信号处于导通状态，有效的所述第一控制信号的下降沿位于所述预设时段内。\n\n[0018]在上述发光基板中，所述发光元件与所述驱动晶体管的所述第一极连接。\n\n[0019]在上述发光基板中，所述控制单元在所述开关晶体管处于截止状态时处于导通状态。\n\n[0020]在上述发光基板中，所述发光基板为显示面板或背光模组。\n\n[0021]在上述发光基板中，在从靠近所述数据信号输入端指向远离所述数据信号输入端的方向上，多个所述驱动电路的所述预设时段的时长递减，且在从靠近所述第一控制信号输入端指向远离所述第一控制信号输入端的方向上，多个所述驱动电路的所述预设时段的时长递减。\n\n[0022]在上述发光基板中，所述发光元件选自次毫米发光二极管、微型发光二极管以及有机发光二极管中的至少一种。\n\n[0023]在上述发光基板中，所述发光基板还包括数据驱动电路以及栅极驱动电路，\n\n[0024]多个所述数据线的所述数据信号输入端与所述数据驱动电路连接；\n\n[0025]多个所述第一控制信号线的所述第一控制信号输入端与所述栅极驱动电路连接。\n\n[0026]一种显示装置中，所述显示装置包括上述发光基板。\n\n[0027]有益效果：本申请提供一种发光基板及显示装置，通过在从靠近数据信号输入端指向远离数据信号输入端的方向上，多个驱动电路的预设时段的时长递减；和/或，在从靠近第一控制信号输入端指向远离第一控制信号输入端的方向上，多个驱动电路的预设时段的时长递减，使得靠近数据信号输入端的发光元件的发光时间相对于远离数据信号输入端的发光元件的发光时间较短，和/或，使得靠近第一控制信号输入端的发光元件相对于远离第一控制信号输入端的发光元件的发光时间较短，有利于近端和远端的发光元件的发光亮度相同，改善显示装置的显示问题。\n\n附图说明\n\n[0028]图1为传统主动式背光模组的驱动电路的示意图；\n\n[0029]图2为扫描信号输入端和数据信号输入端的近端、扫描信号输入端和数据信号输入端的远端的图1所示驱动电路对应的时序图；\n\n[0030]图3为本申请实施例背光模组的平面示意图；\n\n[0031]图4为图3所示背光模组的驱动电路的示意图；\n\n[0032]图5为靠近第一控制信号输入端和数据信号输入端、远离第一控制信号输入端和数据信号输入端的图4所示驱动电路对应的时序图。\n\n具体实施方式\n\n[0033]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0034]请参阅图1及图2，图1为传统主动式背光模组的驱动电路的示意图，图2为扫描信号输入端和数据信号输入端的近端、扫描信号输入端和数据信号输入端的远端的图1所示驱动电路对应的时序图。传统主动式背光模组的驱动电路包括驱动晶体管M2、开关晶体管M1以及发光二极管LED。开关晶体管M1的栅极与扫描信号线Scan连接，开关晶体管M1的第一极与数据线Data连接，开关晶体管M1的第二极与驱动晶体管M2的栅极连接。发光二极管LED连接于驱动晶体管M2的第一极与第一电源信号线VDD之间，驱动晶体管M2的第二极与第二电源信号线VSS连接。驱动晶体管M2和开关晶体管M1均为N型薄膜晶体管。\n\n[0035]在发光阶段，扫描信号线Scan输入高电平的扫描信号VScan，数据线Data输入高电平的数据信号VData，高电平的扫描信号VScan和高电平的数据信号VData的脉冲宽度相同。开关晶体管M1和驱动晶体管M2导通，发光二极管LED发光。\n\n[0036]如图2所示，由于靠近扫描信号输入端的扫描信号VScan(虚线所示)和靠近数据信号输入端的数据信号VData(虚线所示)的波形延时(delay)较轻，远离扫描信号输入端的扫描信号VScan(实线所示)和远离数据信号输入端的数据信号VData(实线所示)的波形延时较严重，导致输入靠近扫描信号输入端的扫描信号VScan和靠近数据信号输入端的数据信号VData的驱动电路中的发光二极管LED的累积亮度与输入远离扫描信号输入端的扫描信号VScan和远离数据信号输入端的数据信号VData的发光二极管LED的累积亮度存在较大差异，最终表现为背光模组的近远端的亮度差异不同。其中，VLED为发光二极管LED两端的电压，VLED中的实线为远离扫描信号输入端和数据信号输入端的发光二极管LED两端的电压，VLED中的虚线为靠近扫描信号输入端和数据信号输入端的发光二极管LED两端的电压。ILED为流过发光二极管LED的电流，ILED中的实线为流过远离扫描信号输入端和数据信号输入端的发光二极管LED的电流，ILED中的虚线为流过靠近扫描信号输入端和数据信号输入端的发光二极管LED的电流。\n\n[0037]请参阅图3-图5，图3为本申请实施例背光模组的平面示意图，图4为图3所示背光模组的驱动电路的示意图，图5为图4所示驱动电路对应的时序图。背光模组包括基板10、数据驱动电路30、栅极驱动电路、多个驱动电路20、多个数据线、多个第一控制信号线、多个第二控制信号线、多个第一电源信号线VDD以及多个第二电源信号线VSS。\n\n[0038]多个数据线包括依次排布设置的数据线Dn、数据线Dn+1、数据线Dn+2、数据线Dn+3以及数据线Dn+4。数据线Dn、数据线Dn+1、数据线Dn+2、数据线Dn+3以及数据线Dn+4均沿第二方向延伸，且沿第一方向并排设置，第一方向与第二方向垂直。每个数据线具有数据信号输入端，数据信号输入端靠近数据驱动电路30，且多个数据线的数据信号输入端与数据驱动电路30连接，数据驱动电路30将数据信号传输至多个数据线。数据驱动电路为源极驱动器，源极驱动器绑定于基板10上。\n\n[0039]多个第一控制信号线包括依次排布设置的第一控制信号线Scan(n)、第一控制信号线Scan(n+1)、第一控制信号线Scan(n+2)以及第一控制信号线Scan(n+3)。第一控制信号线Scan(n)、第一控制信号线Scan(n+1)、第一控制信号线Scan(n+2)以及第一控制信号线Scan(n+3)均沿第一方向延伸，且沿第二方向并排设置。每个第一控制信号线具有第一控制信号输入端，第一控制信号输入端靠近第一栅极驱动电路401设置。多个第一控制信号线用于传输第一控制信号。\n\n[0040]多个第二控制信号线包括依次排布设置的第二控制信号线Scan(m)、第二控制信号线Scan(m+1)、第二控制信号线Scan(m+2)、第二控制信号线Scan(m+3)。第二控制信号线Scan(m)、第二控制信号线Scan(m+1)、第二控制信号线Scan(m+2)、第二控制信号线Scan(m+3)均沿第一方向延伸，且沿第二方向并排设置。每个第二控制信号线与每个第一控制信号线相邻设置。多个第二控制信号线用于传输第二控制信号。\n\n[0041]栅极驱动电路包括第一栅极驱动电路401以及第二栅极驱动电路402。多个第一控制信号线的第一控制信号输入端与第一栅极驱动电路401连接，以使第一栅极驱动电路401输出的第一控制信号输出至多个第一控制信号线。多个第二控制信号线与第二栅极驱动电路402连接，以使第二栅极驱动电路402输出的第二控制信号输出至多个第二控制信号线。第一栅极驱动电路401和第二栅极电路402可以集成于同一个栅极驱动芯片中，栅极驱动芯片绑定于基板10上。第一栅极驱动电路401和第二栅极驱动电路402也可以设置于基板10上，且第一栅极驱动电路401和第二栅极驱动电路402设置于基板10的相对两侧。可以理解的是，第一栅极驱动电路401和第二栅极驱动电路402也可以设置于基板10的同一侧。\n\n[0042]多个驱动电路20阵列地设置于基板10上，基板10为玻璃基板。每个驱动电路20与一个数据线、一个第一控制信号线、一个第二控制信号线、第一电源信号线VDD以及第二电源信号线VSS连接。以与数据线D(n)、第一控制信号线Scan(n)以及第二控制信号线Scan(m)连接的驱动电路20为例对本申请的方案进行说明。\n\n[0043]每个驱动电路20包括发光元件LED、开关晶体管M1、驱动晶体管M2以及控制单元201。\n\n[0044]发光元件LED连接于第一电源信号线VDD和第二电源信号线VSS之间。第一电源信号线VDD输入直流高电平，第二电源信号线VSS输入直流低电平。电流经过发光元件LED时发出光。电流流过发光元件LED的时长不同，发光元件LED累积的亮度不同。\n\n[0045]具体地，发光元件LED的阳极与第一电源信号线VDD连接，发光元件LED的阴极与驱动晶体管M2的第一极连接。发光元件LED为次毫米发光二极管。\n\n[0046]开关晶体管M1的栅极与第一控制信号线Scan(n)连接，开关晶体管M1的第一极与数据线D(n)连接，开关晶体管M1的第二极与驱动晶体管M2的栅极连接。第一控制信号有效时，开关晶体管M1导通，数据信号传输至驱动晶体管M2的栅极。第一控制信号无效时，开关晶体管M1截止。\n\n[0047]具体地，开关晶体管M1为N型晶体管，且开关晶体管M1为薄膜晶体管。在其他实施例中，开关晶体管M1也可以为P型晶体管，开关晶体管M1也可以为场效应管。\n\n[0048]驱动晶体管M2的栅极与开关晶体管M1的第二极连接，驱动晶体管M2的第一极和第二极中的一者与发光元件LED连接，驱动晶体管M2的第一极和第二极中的一者与第二电源信号线VSS连接。驱动晶体管M2导通时输出驱动电流，以驱动发光元件LED发光。\n\n[0049]具体地，驱动晶体管M2为N型晶体管，且为薄膜晶体管。驱动晶体管M2的栅极与开关晶体管M1的第二极连接，驱动晶体管M2的第一极与发光元件LED的阴极连接，驱动晶体管M2的第二极与控制单元201连接。驱动晶体管M2也可以为P型晶体管。\n\n[0050]控制单元201与驱动晶体管M2的第一极或第二极中的一者连接。控制单元201在开关晶体管M1处于导通状态的预设时段处于截止状态，且在开关晶体管M1处于导通状态时除预设时段外的时段处于导通状态。\n\n[0051]具体地，控制单元201包括控制晶体管M3，控制晶体管M3的栅极与第二控制信号线Scan(m)连接，控制晶体管M3的第一极与驱动晶体管M2的第二极连接，控制晶体管M3的第二极与第二电源信号线VSS连接。第二控制信号有效时，控制单元201处于导通状态；第二控制信号无效时，控制单元201处于截止状态。控制晶体管M3为N型晶体管。控制晶体管M3也可以为P型晶体管。\n\n[0052]第二控制信号在第一控制信号的有效时段内的预设时段为无效，且在第一控制信号的有效时段内除预设时段外的时段为有效，以使得控制单元201在开关晶体管M1处于导通状态的预设时段处于截止状态，且在开关晶体管M1处于导通状态时除预设时段外的时段处于导通状态，对应地，驱动晶体管M2驱动发光元件LED发光的时间为第一控制信号有效时段内与第二控制信号的有效时段交叠的时间段。通过控制预设时段的时间长度可以调节发光元件的累积亮度。预设时段越短，则发光元件LED的发光时间越长；预设时段越长，则发光元件LED的发光时间越短。预设时段的时长小于开关晶体管M1的导通状态对应的时长且大于或等于0，例如预设时段为第一控制信号的有效时段的时长的1/4、1/8、1/12、1/16等。\n\n[0053]在从靠近数据信号输入端指向远离数据信号输入端的方向上，多个驱动电路20的预设时段的时长递减；和/或，在从靠近第一控制信号输入端指向远离第一控制信号输入端的方向上，多个驱动电路20的预设时段的时长递减。\n\n[0054]具体地，在从靠近数据信号输入端指向远离数据信号输入端的方向上，多个驱动电路20的预设时段T的时长递减，且在从靠近第一控制信号输入端指向远离第一控制信号输入端的方向上，多个驱动电路20的预设时段T的时长递减，以使得同时靠近第一控制信号输入端和数据信号输入端的驱动电路20的预设时段较大，且同时远离第一控制信号输入端和数据信号输入端的驱动电路20的预设时段较小，进而使得近端和远端的驱动电路20中的发光元件LED的亮度相同。\n\n[0055]如图5所示，虚线所示的第一控制信号VScan(n)、第二控制信号VScan(m)、数据信号VD(n)输入至同时靠近第一控制信号输入端和数据信号输入端的驱动电路20a，虚线所示电压VLED以及电流ILED为驱动电路20a中的发光元件LED发光时的电压和电流。实线所示的第一控制信号VScan(n+3)、第二控制信号VScan(m+3)以及数据信号VD(n+4)输入至同时远离第一控制信号输入端和数据信号输入端的驱动电路20b，实线所示电压VLED以及电流ILED为驱动电路20b中的发光元件LED发光时的电压和电流。\n\n[0056]同时靠近第一控制信号输入端和数据信号输入端的驱动电路20a的预设时段T的时长为第一控制信号VScan(n)有效时段的时长的3/8，即第二控制信号VScan(m)的无效时段T的时长对应第一控制信号VScan(n)有效时段的时长的3/8，第二控制信号VScan(m)在第一控制信号VScan(n)有效时段内除预设时段T之外的时段均为有效，第一控制信号VScan(n)的有效时段和第二控制信号VScan(m)的有效时段的重叠时段的时长等于第一控制信号VScan(n)的有效时段的时长的5/8，驱动电路20a中发光元件LED发光的时间较短，发光元件LED发光对应的电流ILED较大。同时远离第一控制信号输入端和数据信号输入端的驱动电路20b的预设时段T的时长为0，第一控制信号VScan(n+3)与第二控制信号VScan(m+3)的重叠时段等于第一控制信号的VScan(n+3)的有效时段，驱动电路20b中发光元件LED发光的时间较长，发光元件LED发光对应的电流ILED较小。靠近第一控制信号输入端和数据信号输入端的驱动电路20a的发光元件LED的电流ILED在第一控制信号VScan(n)的有效时段和第二控制信号VScan(m)的有效时段的重叠时段累积的亮度等于远离第一控制信号输入端和数据信号输入端的驱动电路20b的发光元件LED的电流ILED在第一控制信号VScan(n)的有效时段内累积的亮度，使得第一控制信号输入端以及数据信号输入端的近端和远端的驱动电路中的发光元件LED的亮度相同。\n\n[0057]可以理解的是，也可以在第二方向上，从靠近数据信号输入端指向远离数据信号输入端，多个驱动电路20的预设时段T的时长递减，例如与同一个数据线连接的多个驱动电路20中靠近数据驱动电路30的驱动电路20的预设时段大于远离数据驱动电路30的驱动电路20的预设时段，以改善数据线的阻抗导致数据信号的波形延时进而导致亮度差异。或者，在第一方向上，从靠近第一控制信号输入端指向远离第一控制信号输入端，多个驱动电路20的预设时段T的时长递减，例如与同一个第一控制信号线连接的多个驱动电路20中靠近第一栅极驱动电路401的驱动电路20的预设时段大于远离第一栅极驱动电路401的驱动电路20的预设时段，以改善由于第一控制信号线的阻抗导致第一控制信号的波形延时进而导致的亮度差异。\n\n[0058]控制单元201在开关晶体管M1处于截止状态时处于导通状态，以使得控制单元201在预设时段T外的时段均处于导通状态。\n\n[0059]有效的第一控制信号的下降沿位于预设时段T内，以使得第二控制信号在发光元件LED稳定发光后在第二控制信号的作用下停止发光，避免第二控制信号在发光元件LED发光不稳定时停止发光而导致发光元件LED的发光亮度难以调节。其中，下降沿为第一控制信号有效时段下降的时间点。\n\n[0060]本申请还提供一种显示装置，显示装置包括上述背光模组以及液晶显示面板。液晶显示面板位于背光模组的出光侧。\n\n[0061]本申请显示装置通过在背光模组上，每个驱动电路的发光元件的亮度通过预设时段的长短可以调节，在从靠近数据信号输入端指向远离数据信号输入端的方向上，多个驱动电路的预设时段的时长递减；和/或，在从靠近第一控制信号输入端指向远离第一控制信号输入端的方向上，多个驱动电路的预设时段的时长递减，使得靠近数据信号输入端的发光元件的发光时间相对于远离数据信号输入端的发光元件的发光时间较短，和/或，使得靠近第一控制信号输入端的发光元件相对于远离第一控制信号输入端的发光元件的发光时间较短，有利于近端和远端的发光元件的发光亮度相同，改善显示装置的显示问题。\n\n[0062]可以理解的是，显示面板也可以包括多个上述驱动电路20，对应地，发光元件LED可以为微型发光二极管(Micro-LED)或者有机发光二极管，根据驱动电路20与第一控制信号输入端以及数据信号输入端的远近，以使得近端和远端的发光元件LED的亮度相同，改善显示面板的显示效果。\n\n[0063]以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种发光基板及显示装置。\n\n背景技术\n\n[0002]目前，对于主动式次毫米发光二极管(Mini-LED)背光模组，通常需要扫描线输入扫描信号，数据线输入数据信号，而扫描线和数据线的厚度通常只有几微米，使得扫描线和数据线的阻抗较大，进而导致靠近扫描信号输入端的扫描信号的波形和远离扫描信号输入端的扫描信号的波形会存在差异，且靠近数据信号输入端的数据信号的波形和远离数据信号输入端的数据信号的波形存在差异，信号输入端(数据信号输入端和扫描信号输入端)近端和远端的信号(数据信号以及扫描信号)的波形差异会导致近端和远端的次毫米发光二极管的亮度差异明显，特别是对于尺寸越大的背光模组，亮度差异就会越大，影响显示装置的显示效果。\n\n[0003]因此，有必要提出一种技术方案以改善背光模组的近端和远端的亮度差异导致的显示问题。\n\n发明内容\n\n[0004]本申请的目的在于提供一种发光基板及显示装置，以改善发光基板的近端和远端的亮度差异导致的显示问题。\n\n[0005]为实现上述目的，本申请提供一种发光基板，所述发光基板包括：\n\n[0006]多个数据线，每个所述数据线具有数据信号输入端；\n\n[0007]多个第一控制信号线，每个所述第一控制信号线具有第一控制信号输入端；以及\n\n[0008]多个驱动电路，每个所述驱动电路包括：\n\n[0009]发光元件；\n\n[0010]开关晶体管，所述开关晶体管的栅极与所述第一控制信号线连接，所述开关晶体管的第一极与所述数据线连接；\n\n[0011]驱动晶体管，所述驱动晶体管的栅极与所述开关晶体管的第二极连接，所述驱动晶体管的第一极或第二极中的一者与所述发光元件连接；以及\n\n[0012]控制单元，所述控制单元与所述驱动晶体管的所述第一极或所述第二极中的一者连接，所述控制单元在所述开关晶体管处于导通状态的预设时段处于截止状态，且在所述开关晶体管处于导通状态时除所述预设时段外的时段处于导通状态；\n\n[0013]其中，在从靠近所述数据信号输入端指向远离所述数据信号输入端的方向上，多个所述驱动电路的所述预设时段的时长递减；和/或，\n\n[0014]在从靠近所述第一控制信号输入端指向远离所述第一控制信号输入端的方向上，多个所述驱动电路的所述预设时段的时长递减。\n\n[0015]在上述发光基板中，所述发光基板还包括多个第二控制信号线，\n\n[0016]所述控制单元包括控制晶体管，所述控制晶体管的栅极与所述第二控制信号线连接，所述控制晶体管与所述驱动晶体管的所述第二极连接。\n\n[0017]在上述发光基板中，所述第一控制信号线用于传输第一控制信号，所述开关晶体管根据有效的所述第一控制信号处于导通状态，有效的所述第一控制信号的下降沿位于所述预设时段内。\n\n[0018]在上述发光基板中，所述发光元件与所述驱动晶体管的所述第一极连接。\n\n[0019]在上述发光基板中，所述控制单元在所述开关晶体管处于截止状态时处于导通状态。\n\n[0020]在上述发光基板中，所述发光基板为显示面板或背光模组。\n\n[0021]在上述发光基板中，在从靠近所述数据信号输入端指向远离所述数据信号输入端的方向上，多个所述驱动电路的所述预设时段的时长递减，且在从靠近所述第一控制信号输入端指向远离所述第一控制信号输入端的方向上，多个所述驱动电路的所述预设时段的时长递减。\n\n[0022]在上述发光基板中，所述发光元件选自次毫米发光二极管、微型发光二极管以及有机发光二极管中的至少一种。\n\n[0023]在上述发光基板中，所述发光基板还包括数据驱动电路以及栅极驱动电路，\n\n[0024]多个所述数据线的所述数据信号输入端与所述数据驱动电路连接；\n\n[0025]多个所述第一控制信号线的所述第一控制信号输入端与所述栅极驱动电路连接。\n\n[0026]一种显示装置中，所述显示装置包括上述发光基板。\n\n[0027]有益效果：本申请提供一种发光基板及显示装置，通过在从靠近数据信号输入端指向远离数据信号输入端的方向上，多个驱动电路的预设时段的时长递减；和/或，在从靠近第一控制信号输入端指向远离第一控制信号输入端的方向上，多个驱动电路的预设时段的时长递减，使得靠近数据信号输入端的发光元件的发光时间相对于远离数据信号输入端的发光元件的发光时间较短，和/或，使得靠近第一控制信号输入端的发光元件相对于远离第一控制信号输入端的发光元件的发光时间较短，有利于近端和远端的发光元件的发光亮度相同，改善显示装置的显示问题。\n\n附图说明\n\n[0028]图1为传统主动式背光模组的驱动电路的示意图；\n\n[0029]图2为扫描信号输入端和数据信号输入端的近端、扫描信号输入端和数据信号输入端的远端的图1所示驱动电路对应的时序图；\n\n[0030]图3为本申请实施例背光模组的平面示意图；\n\n[0031]图4为图3所示背光模组的驱动电路的示意图；\n\n[0032]图5为靠近第一控制信号输入端和数据信号输入端、远离第一控制信号输入端和数据信号输入端的图4所示驱动电路对应的时序图。\n\n具体实施方式\n\n[0033]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0034]请参阅图1及图2，图1为传统主动式背光模组的驱动电路的示意图，图2为扫描信号输入端和数据信号输入端的近端、扫描信号输入端和数据信号输入端的远端的图1所示驱动电路对应的时序图。传统主动式背光模组的驱动电路包括驱动晶体管M2、开关晶体管M1以及发光二极管LED。开关晶体管M1的栅极与扫描信号线Scan连接，开关晶体管M1的第一极与数据线Data连接，开关晶体管M1的第二极与驱动晶体管M2的栅极连接。发光二极管LED连接于驱动晶体管M2的第一极与第一电源信号线VDD之间，驱动晶体管M2的第二极与第二电源信号线VSS连接。驱动晶体管M2和开关晶体管M1均为N型薄膜晶体管。\n\n[0035]在发光阶段，扫描信号线Scan输入高电平的扫描信号VScan，数据线Data输入高电平的数据信号VData，高电平的扫描信号VScan和高电平的数据信号VData的脉冲宽度相同。开关晶体管M1和驱动晶体管M2导通，发光二极管LED发光。\n\n[0036]如图2所示，由于靠近扫描信号输入端的扫描信号VScan(虚线所示)和靠近数据信号输入端的数据信号VData(虚线所示)的波形延时(delay)较轻，远离扫描信号输入端的扫描信号VScan(实线所示)和远离数据信号输入端的数据信号VData(实线所示)的波形延时较严重，导致输入靠近扫描信号输入端的扫描信号VScan和靠近数据信号输入端的数据信号VData的驱动电路中的发光二极管LED的累积亮度与输入远离扫描信号输入端的扫描信号VScan和远离数据信号输入端的数据信号VData的发光二极管LED的累积亮度存在较大差异，最终表现为背光模组的近远端的亮度差异不同。其中，VLED为发光二极管LED两端的电压，VLED中的实线为远离扫描信号输入端和数据信号输入端的发光二极管LED两端的电压，VLED中的虚线为靠近扫描信号输入端和数据信号输入端的发光二极管LED两端的电压。ILED为流过发光二极管LED的电流，ILED中的实线为流过远离扫描信号输入端和数据信号输入端的发光二极管LED的电流，ILED中的虚线为流过靠近扫描信号输入端和数据信号输入端的发光二极管LED的电流。\n\n[0037]请参阅图3-图5，图3为本申请实施例背光模组的平面示意图，图4为图3所示背光模组的驱动电路的示意图，图5为图4所示驱动电路对应的时序图。背光模组包括基板10、数据驱动电路30、栅极驱动电路、多个驱动电路20、多个数据线、多个第一控制信号线、多个第二控制信号线、多个第一电源信号线VDD以及多个第二电源信号线VSS。\n\n[0038]多个数据线包括依次排布设置的数据线Dn、数据线Dn+1、数据线Dn+2、数据线Dn+3以及数据线Dn+4。数据线Dn、数据线Dn+1、数据线Dn+2、数据线Dn+3以及数据线Dn+4均沿第二方向延伸，且沿第一方向并排设置，第一方向与第二方向垂直。每个数据线具有数据信号输入端，数据信号输入端靠近数据驱动电路30，且多个数据线的数据信号输入端与数据驱动电路30连接，数据驱动电路30将数据信号传输至多个数据线。数据驱动电路为源极驱动器，源极驱动器绑定于基板10上。\n\n[0039]多个第一控制信号线包括依次排布设置的第一控制信号线Scan(n)、第一控制信号线Scan(n+1)、第一控制信号线Scan(n+2)以及第一控制信号线Scan(n+3)。第一控制信号线Scan(n)、第一控制信号线Scan(n+1)、第一控制信号线Scan(n+2)以及第一控制信号线Scan(n+3)均沿第一方向延伸，且沿第二方向并排设置。每个第一控制信号线具有第一控制信号输入端，第一控制信号输入端靠近第一栅极驱动电路401设置。多个第一控制信号线用于传输第一控制信号。\n\n[0040]多个第二控制信号线包括依次排布设置的第二控制信号线Scan(m)、第二控制信号线Scan(m+1)、第二控制信号线Scan(m+2)、第二控制信号线Scan(m+3)。第二控制信号线Scan(m)、第二控制信号线Scan(m+1)、第二控制信号线Scan(m+2)、第二控制信号线Scan(m+3)均沿第一方向延伸，且沿第二方向并排设置。每个第二控制信号线与每个第一控制信号线相邻设置。多个第二控制信号线用于传输第二控制信号。\n\n[0041]栅极驱动电路包括第一栅极驱动电路401以及第二栅极驱动电路402。多个第一控制信号线的第一控制信号输入端与第一栅极驱动电路401连接，以使第一栅极驱动电路401输出的第一控制信号输出至多个第一控制信号线。多个第二控制信号线与第二栅极驱动电路402连接，以使第二栅极驱动电路402输出的第二控制信号输出至多个第二控制信号线。第一栅极驱动电路401和第二栅极电路402可以集成于同一个栅极驱动芯片中，栅极驱动芯片绑定于基板10上。第一栅极驱动电路401和第二栅极驱动电路402也可以设置于基板10上，且第一栅极驱动电路401和第二栅极驱动电路402设置于基板10的相对两侧。可以理解的是，第一栅极驱动电路401和第二栅极驱动电路402也可以设置于基板10的同一侧。\n\n[0042]多个驱动电路20阵列地设置于基板10上，基板10为玻璃基板。每个驱动电路20与一个数据线、一个第一控制信号线、一个第二控制信号线、第一电源信号线VDD以及第二电源信号线VSS连接。以与数据线D(n)、第一控制信号线Scan(n)以及第二控制信号线Scan(m)连接的驱动电路20为例对本申请的方案进行说明。\n\n[0043]每个驱动电路20包括发光元件LED、开关晶体管M1、驱动晶体管M2以及控制单元201。\n\n[0044]发光元件LED连接于第一电源信号线VDD和第二电源信号线VSS之间。第一电源信号线VDD输入直流高电平，第二电源信号线VSS输入直流低电平。电流经过发光元件LED时发出光。电流流过发光元件LED的时长不同，发光元件LED累积的亮度不同。\n\n[0045]具体地，发光元件LED的阳极与第一电源信号线VDD连接，发光元件LED的阴极与驱动晶体管M2的第一极连接。发光元件LED为次毫米发光二极管。\n\n[0046]开关晶体管M1的栅极与第一控制信号线Scan(n)连接，开关晶体管M1的第一极与数据线D(n)连接，开关晶体管M1的第二极与驱动晶体管M2的栅极连接。第一控制信号有效时，开关晶体管M1导通，数据信号传输至驱动晶体管M2的栅极。第一控制信号无效时，开关晶体管M1截止。\n\n[0047]具体地，开关晶体管M1为N型晶体管，且开关晶体管M1为薄膜晶体管。在其他实施例中，开关晶体管M1也可以为P型晶体管，开关晶体管M1也可以为场效应管。\n\n[0048]驱动晶体管M2的栅极与开关晶体管M1的第二极连接，驱动晶体管M2的第一极和第二极中的一者与发光元件LED连接，驱动晶体管M2的第一极和第二极中的一者与第二电源信号线VSS连接。驱动晶体管M2导通时输出驱动电流，以驱动发光元件LED发光。\n\n[0049]具体地，驱动晶体管M2为N型晶体管，且为薄膜晶体管。驱动晶体管M2的栅极与开关晶体管M1的第二极连接，驱动晶体管M2的第一极与发光元件LED的阴极连接，驱动晶体管M2的第二极与控制单元201连接。驱动晶体管M2也可以为P型晶体管。\n\n[0050]控制单元201与驱动晶体管M2的第一极或第二极中的一者连接。控制单元201在开关晶体管M1处于导通状态的预设时段处于截止状态，且在开关晶体管M1处于导通状态时除预设时段外的时段处于导通状态。\n\n[0051]具体地，控制单元201包括控制晶体管M3，控制晶体管M3的栅极与第二控制信号线Scan(m)连接，控制晶体管M3的第一极与驱动晶体管M2的第二极连接，控制晶体管M3的第二极与第二电源信号线VSS连接。第二控制信号有效时，控制单元201处于导通状态；第二控制信号无效时，控制单元201处于截止状态。控制晶体管M3为N型晶体管。控制晶体管M3也可以为P型晶体管。\n\n[0052]第二控制信号在第一控制信号的有效时段内的预设时段为无效，且在第一控制信号的有效时段内除预设时段外的时段为有效，以使得控制单元201在开关晶体管M1处于导通状态的预设时段处于截止状态，且在开关晶体管M1处于导通状态时除预设时段外的时段处于导通状态，对应地，驱动晶体管M2驱动发光元件LED发光的时间为第一控制信号有效时段内与第二控制信号的有效时段交叠的时间段。通过控制预设时段的时间长度可以调节发光元件的累积亮度。预设时段越短，则发光元件LED的发光时间越长；预设时段越长，则发光元件LED的发光时间越短。预设时段的时长小于开关晶体管M1的导通状态对应的时长且大于或等于0，例如预设时段为第一控制信号的有效时段的时长的1/4、1/8、1/12、1/16等。\n\n[0053]在从靠近数据信号输入端指向远离数据信号输入端的方向上，多个驱动电路20的预设时段的时长递减；和/或，在从靠近第一控制信号输入端指向远离第一控制信号输入端的方向上，多个驱动电路20的预设时段的时长递减。\n\n[0054]具体地，在从靠近数据信号输入端指向远离数据信号输入端的方向上，多个驱动电路20的预设时段T的时长递减，且在从靠近第一控制信号输入端指向远离第一控制信号输入端的方向上，多个驱动电路20的预设时段T的时长递减，以使得同时靠近第一控制信号输入端和数据信号输入端的驱动电路20的预设时段较大，且同时远离第一控制信号输入端和数据信号输入端的驱动电路20的预设时段较小，进而使得近端和远端的驱动电路20中的发光元件LED的亮度相同。\n\n[0055]如图5所示，虚线所示的第一控制信号VScan(n)、第二控制信号VScan(m)、数据信号VD(n)输入至同时靠近第一控制信号输入端和数据信号输入端的驱动电路20a，虚线所示电压VLED以及电流ILED为驱动电路20a中的发光元件LED发光时的电压和电流。实线所示的第一控制信号VScan(n+3)、第二控制信号VScan(m+3)以及数据信号VD(n+4)输入至同时远离第一控制信号输入端和数据信号输入端的驱动电路20b，实线所示电压VLED以及电流ILED为驱动电路20b中的发光元件LED发光时的电压和电流。\n\n[0056]同时靠近第一控制信号输入端和数据信号输入端的驱动电路20a的预设时段T的时长为第一控制信号VScan(n)有效时段的时长的3/8，即第二控制信号VScan(m)的无效时段T的时长对应第一控制信号VScan(n)有效时段的时长的3/8，第二控制信号VScan(m)在第一控制信号VScan(n)有效时段内除预设时段T之外的时段均为有效，第一控制信号VScan(n)的有效时段和第二控制信号VScan(m)的有效时段的重叠时段的时长等于第一控制信号VScan(n)的有效时段的时长的5/8，驱动电路20a中发光元件LED发光的时间较短，发光元件LED发光对应的电流ILED较大。同时远离第一控制信号输入端和数据信号输入端的驱动电路20b的预设时段T的时长为0，第一控制信号VScan(n+3)与第二控制信号VScan(m+3)的重叠时段等于第一控制信号的VScan(n+3)的有效时段，驱动电路20b中发光元件LED发光的时间较长，发光元件LED发光对应的电流ILED较小。靠近第一控制信号输入端和数据信号输入端的驱动电路20a的发光元件LED的电流ILED在第一控制信号VScan(n)的有效时段和第二控制信号VScan(m)的有效时段的重叠时段累积的亮度等于远离第一控制信号输入端和数据信号输入端的驱动电路20b的发光元件LED的电流ILED在第一控制信号VScan(n)的有效时段内累积的亮度，使得第一控制信号输入端以及数据信号输入端的近端和远端的驱动电路中的发光元件LED的亮度相同。\n\n[0057]可以理解的是，也可以在第二方向上，从靠近数据信号输入端指向远离数据信号输入端，多个驱动电路20的预设时段T的时长递减，例如与同一个数据线连接的多个驱动电路20中靠近数据驱动电路30的驱动电路20的预设时段大于远离数据驱动电路30的驱动电路20的预设时段，以改善数据线的阻抗导致数据信号的波形延时进而导致亮度差异。或者，在第一方向上，从靠近第一控制信号输入端指向远离第一控制信号输入端，多个驱动电路20的预设时段T的时长递减，例如与同一个第一控制信号线连接的多个驱动电路20中靠近第一栅极驱动电路401的驱动电路20的预设时段大于远离第一栅极驱动电路401的驱动电路20的预设时段，以改善由于第一控制信号线的阻抗导致第一控制信号的波形延时进而导致的亮度差异。\n\n[0058]控制单元201在开关晶体管M1处于截止状态时处于导通状态，以使得控制单元201在预设时段T外的时段均处于导通状态。\n\n[0059]有效的第一控制信号的下降沿位于预设时段T内，以使得第二控制信号在发光元件LED稳定发光后在第二控制信号的作用下停止发光，避免第二控制信号在发光元件LED发光不稳定时停止发光而导致发光元件LED的发光亮度难以调节。其中，下降沿为第一控制信号有效时段下降的时间点。\n\n[0060]本申请还提供一种显示装置，显示装置包括上述背光模组以及液晶显示面板。液晶显示面板位于背光模组的出光侧。\n\n[0061]本申请显示装置通过在背光模组上，每个驱动电路的发光元件的亮度通过预设时段的长短可以调节，在从靠近数据信号输入端指向远离数据信号输入端的方向上，多个驱动电路的预设时段的时长递减；和/或，在从靠近第一控制信号输入端指向远离第一控制信号输入端的方向上，多个驱动电路的预设时段的时长递减，使得靠近数据信号输入端的发光元件的发光时间相对于远离数据信号输入端的发光元件的发光时间较短，和/或，使得靠近第一控制信号输入端的发光元件相对于远离第一控制信号输入端的发光元件的发光时间较短，有利于近端和远端的发光元件的发光亮度相同，改善显示装置的显示问题。\n\n[0062]可以理解的是，显示面板也可以包括多个上述驱动电路20，对应地，发光元件LED可以为微型发光二极管(Micro-LED)或者有机发光二极管，根据驱动电路20与第一控制信号输入端以及数据信号输入端的远近，以使得近端和远端的发光元件LED的亮度相同，改善显示面板的显示效果。\n\n[0063]以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10875, 23929, '技术领域\n\n[0001]本申请涉及显示技术领域，更具体地说，涉及一种驱动TFT的灰阶补偿方法、装置及其显示面板、显示装置。\n\n背景技术\n\n[0002]随着LED显示器等显示技术的不断发展和进步，带来日益丰富的显示产品。由于以上显示器所采用的驱动都用在驱动TFT的饱和区，且存在器件差异，所以需要对驱动TFT(driving TFT)进行K值的补偿。实验表明，传统K值侦测的方式，在补偿低灰阶时，会发生过补偿的问题，从而导致低灰阶显示偏亮。\n\n[0003]在实现过程中，发明人发现传统技术中至少存在如下问题：传统K值侦测的方式，在补偿低灰阶时，会发生过补偿，导致低灰阶显示偏亮。\n\n发明内容\n\n[0004]基于此，有必要针对传统K值侦测的方式，在补偿低灰阶时，会发生过补偿，导致低灰阶显示偏亮的问题，提供一种驱动TFT的灰阶补偿方法、装置及其显示面板、显示装置。\n\n[0005]为了实现上述目的，本发明实施例提供了一种驱动TFT的灰阶补偿方法，包括以下步骤：\n\n[0006]获取驱动TFT的各个灰阶的侦测电流电压比；将各侦测电流电压比中的最大值确认为第一K值；将对应第一K值的灰阶确认为中间灰阶；将大于或等于中间灰阶的灰阶确认为高灰阶；将小于中间灰阶的灰阶确认为低灰阶；侦测电流电压比为驱动TFT的栅源电流与驱动TFT的栅源电压的比值；\n\n[0007]获取若干个对应低灰阶的侦测电流电压比，对各个对应低灰阶的侦测电流电压比进行拟合处理，得到第二K值；\n\n[0008]在驱动TFT的待补偿灰阶为低灰阶时，根据第二K值对待补偿灰阶进行数据补偿；\n\n[0009]在驱动TFT的待补偿灰阶为高灰阶时，根据第一K值对待补偿灰阶进行数据补偿。\n\n[0010]在其中一个实施例中，对各个对应低灰阶的侦测电流电压比进行拟合处理，得到第二K值的步骤包括：\n\n[0011]对各个对应低灰阶的侦测电流电压比进行平均值处理，得到第二K值。\n\n[0012]在其中一个实施例中，对各个对应低灰阶的侦测电流电压比进行拟合处理，得到第二K值的步骤包括：\n\n[0013]将灰阶值为二分之一中间灰阶的灰阶值的低灰阶，确认为中间低灰阶；\n\n[0014]将对应中间低灰阶的侦测电流电压比，确认为第二K值。\n\n[0015]在其中一个实施例中，还包括步骤：\n\n[0016]将各低灰阶划分为N组低灰阶组；N为正整数；\n\n[0017]依次对各低灰阶组中对应低灰阶的侦测电流电压比进行拟合处理，得到各低灰阶组的K值；\n\n[0018]在驱动TFT的待补偿灰阶为低灰阶时，采用待补充灰阶落入的低灰阶组所对应的K值对待补偿灰阶进行数据补偿。\n\n[0019]在其中一个实施例中，将各低灰阶划分为N组低灰阶组的步骤包括：\n\n[0020]将各低灰阶平均划分为N组低灰阶组；各低灰阶组包含的低灰阶数量相等。\n\n[0021]在其中一个实施例中，获取驱动TFT的各个灰阶的侦测电流电压比的步骤包括：\n\n[0022]侦测驱动TFT的输出电压，得到侦测输出电压，并根据驱动TFT的输入电压和侦测输出电压，得到侦测电压；\n\n[0023]侦测驱动TFT的输出电流，得到侦测输出电流，并根据驱动TFT的输入电流和侦测输出电流，得到侦测电流；\n\n[0024]对侦测电流与侦测电压进行比值处理，得到侦测电流电压比。\n\n[0025]另一方面，本发明实施例还提供了一种驱动TFT的灰阶补偿装置，包括：\n\n[0026]数据获取及第一K值确认单元，用于获取驱动TFT的各个灰阶的侦测电流电压比；将各侦测电流电压比中的最大值确认为第一K值；将对应第一K值的灰阶确认为中间灰阶；将大于或等于中间灰阶的灰阶确认为高灰阶；将小于中间灰阶的灰阶确认为低灰阶；侦测电流电压比为驱动TFT的栅源电流与驱动TFT的栅源电压的比值；\n\n[0027]第二K值确认单元，用于获取若干个对应低灰阶的侦测电流电压比，对各个对应低灰阶的侦测电流电压比进行拟合处理，得到第二K值；\n\n[0028]低灰阶补偿单元，用于在驱动TFT的待补偿灰阶为低灰阶时，根据第二K值对待补偿灰阶进行数据补偿；\n\n[0029]高灰阶补偿单元，用于在驱动TFT的待补偿灰阶为高灰阶时，根据第一K值对待补偿灰阶进行数据补偿。\n\n[0030]另一方面，本发明实施例还提供了一种显示面板，包括处理设备以及连接处理设备的发光设备；\n\n[0031]处理设备用于执行如上述中任一项的驱动TFT的灰阶补偿方法的步骤。\n\n[0032]另一方面，本发明实施例还提供了一种显示装置，包括如上述的显示面板。\n\n[0033]在其中一个实施例中，显示面板为OLED显示面板，Micro LED显示面板，Mini LED显示面板或μLED显示面板。\n\n[0034]上述技术方案中的一个技术方案具有如下优点和有益效果：\n\n[0035]上述的驱动TFT的灰阶补偿方法的各实施例中，获取驱动TFT的各个灰阶的侦测电流电压比；将各侦测电流电压比中的最大值确认为第一K值；将对应第一K值的灰阶确认为中间灰阶；将大于或等于中间灰阶的灰阶确认为高灰阶；将小于中间灰阶的灰阶确认为低灰阶；获取若干个对应低灰阶的侦测电流电压比，对各个对应低灰阶的侦测电流电压比进行拟合处理，得到第二K值；在驱动TFT的待补偿灰阶为低灰阶时，根据第二K值对待补偿灰阶进行数据补偿；在驱动TFT的待补偿灰阶为高灰阶时，根据第一K值对待补偿灰阶进行数据补偿，进而实现对驱动TFT的低灰阶K值补偿。本申请通过对驱动TFT的各个灰阶划分高灰阶和低灰阶，对高灰阶进行第一K值补偿，即在待补偿灰阶高于中间灰阶时，采用第一K值对显示的数据信号(data)进行补偿，然后再进行显示；对低灰阶进行第二K值补偿，即在待补偿灰阶低于中间灰阶时，采用第二K值对显示的数据信号(data)进行补偿，然后再进行显示，避免了驱动TFT(driving TFT)的低灰阶K值补偿阶段发生过补，实现显示设备在低灰阶和高灰阶均显示均匀。\n\n附图说明\n\n[0036]下面将结合附图及实施例对本申请作进一步说明，附图中：\n\n[0037]图1为一个实施例中驱动TFT的灰阶补偿方法的应用环境图；\n\n[0038]图2为一个实施例中驱动TFT的灰阶补偿方法的第一流程示意图；\n\n[0039]图3为一个实施例中驱动TFT的灰阶补偿方法的第二流程示意图；\n\n[0040]图4为一个实施例中驱动TFT的灰阶补偿方法的IV曲线示意图；\n\n[0041]图5为一个实施例中驱动TFT的灰阶补偿方法的第三流程示意图；\n\n[0042]图6为一个实施例中驱动TFT的灰阶补偿方法的低灰阶分段IV曲线示意图；\n\n[0043]图7为一个实施例中驱动TFT的灰阶补偿装置的方框示意图；\n\n[0044]图8为一个实施例中显示面板的结构示意图。\n\n具体实施方式\n\n[0045]为了便于理解本申请，下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的首选实施例。但是，本申请可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本申请的公开内容更加透彻全面。\n\n[0046]需要说明的是，当一个元件被认为是“连接”另一个元件，它可以是直接连接到另一个元件并与之结合为一体，或者可能同时存在居中元件。本文所使用的术语“安装”、“一端”、“另一端”以及类似的表述只是为了说明的目的。\n\n[0047]除非另有定义，本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本申请。本文所使用的术语“及/或”包括一个或多个相关的所列项目的任意的和所有的组合。\n\n[0048]本申请提供的驱动TFT的灰阶补偿方法，可以应用于如图1所示的应用环境中。其中，显示面板可包括处理设备110和发光设备120。处理设备110与发光设备120连接，其中，处理设备110可包括处理芯片；处理芯片可以但不限于是单片机、DSP(Digital SignalProcessing，数字信号处理)处理器和ARM(Advanced RISC Machines)处理器。发光设备120可以但不限于是LCD发光设备和LED发光设备。\n\n[0049]在一个实施例中，如图2所示，提供了一种驱动TFT的灰阶补偿方法，该方法包括以下步骤：\n\n[0050]步骤S210，获取驱动TFT的各个灰阶的侦测电流电压比；将各侦测电流电压比中的最大值确认为第一K值；将对应第一K值的灰阶确认为中间灰阶；将大于或等于中间灰阶的灰阶确认为高灰阶；将小于中间灰阶的灰阶确认为低灰阶；侦测电流电压比为驱动TFT的栅源电流与驱动TFT的栅源电压的比值。\n\n[0051]其中，驱动TFT(Thin Film Transistor，薄膜晶体管)指的是驱动型薄膜晶体管器件；驱动型TFT可用于驱动相应的子像素发光。侦测电流电压比指的是驱动TFT的栅源电流与该驱动TFT的栅源电压的比值。灰阶指的是将最亮与最暗之间的亮度变化，区分为若干份。在一个示例中，以8bit的显示面板为例，能表现2的8次方，等于256个亮度层次，即该显示面板有256个灰阶(即0灰阶至255灰阶)。第一K值指的是常量K值。第一K值与驱动TFT的特性相关。高灰阶指的是灰阶值大于或等于中间灰阶的灰阶值的灰阶。低灰阶指的是灰阶值小于中间灰阶的灰阶值的灰阶。在一个示例中，假设中间灰阶为128灰阶，则若待补偿灰阶的灰阶值大于或等于128，则该待补偿灰阶为高灰阶；若待补偿灰阶的灰阶值小于128，则该待补偿灰阶为低灰阶。\n\n[0052]需要说明的是，驱动TFT的栅源电流与驱动TFT的栅源电压可根据仿真实验得到；驱动TFT的栅源电流与驱动TFT的栅源电压也可以通过实际测量得到。\n\n[0053]具体地，可通过侦测驱动TFT在各个灰阶下的栅源电流和栅源电压，并依次对各个灰阶下的栅源电流和栅源电压进行比值处理，进而可得到驱动TFT的各个灰阶的侦测电流电压比。可通过查询各侦测电流电压比中的最大值，并将将各侦测电流电压比中的最大值确认为第一K值，将对应第一K值的灰阶确认为中间灰阶；将大于或等于中间灰阶的灰阶确认为高灰阶；将小于中间灰阶的灰阶确认为低灰阶，实现对灰阶的分段划分。\n\n[0054]步骤S220，获取若干个对应低灰阶的侦测电流电压比，对各个对应低灰阶的侦测电流电压比进行拟合处理，得到第二K值。\n\n[0055]其中，第二K值指的是常量K值。第二K值与驱动TFT的特性相关。\n\n[0056]具体地，可从各个低灰阶中，选取若干个对应低灰阶的侦测电流电压比，对选取的各个对应低灰阶的侦测电流电压比进行线性拟合处理，进而可得到第二K值。\n\n[0057]在一个示例中，可选取各个对应低灰阶的侦测电流电压比，对各个对应低灰阶的侦测电流电压比进行线性拟合处理，得到拟合直线；并根据该拟合直线得到直线斜率，进而得到第二K值。\n\n[0058]步骤S230，在驱动TFT的待补偿灰阶为低灰阶时，根据第二K值对待补偿灰阶进行数据补偿。\n\n[0059]具体地，在需要对驱动TFT的待补偿灰阶进行K值补偿时，可对待补偿灰阶的灰阶值进行判断，在待补偿灰阶的灰阶值小于中间灰阶的灰阶值时，判定该待补偿灰阶为低灰阶时，进而选取第二K值对待补偿灰阶进行数据补偿，并对在补偿后进行显示，防止驱动TFT在低灰阶时发生过补，提高亮度显示效果。\n\n[0060]步骤S240，在驱动TFT的待补偿灰阶为高灰阶时，根据第一K值对待补偿灰阶进行数据补偿。\n\n[0061]具体地，在需要对驱动TFT的待补偿灰阶进行K值补偿时，可对待补偿灰阶的灰阶值进行判断，在待补偿灰阶的灰阶值大于或等于中间灰阶的灰阶值时，判定该待补偿灰阶为高灰阶时，进而选取第一K值对待补偿灰阶进行数据补偿，并对在补偿后进行显示，提高亮度显示效果。\n\n[0062]具体而言，通过获取驱动TFT的各个灰阶的侦测电流电压比；将各侦测电流电压比中的最大值确认为第一K值；将对应第一K值的灰阶确认为中间灰阶；将大于或等于中间灰阶的灰阶确认为高灰阶；将小于中间灰阶的灰阶确认为低灰阶；通过获取若干个对应低灰阶的侦测电流电压比，对各个对应低灰阶的侦测电流电压比进行拟合处理，进而得到第二K值；在驱动TFT的待补偿灰阶为低灰阶时，根据第二K值对待补偿灰阶进行数据补偿；在驱动TFT的待补偿灰阶为高灰阶时，根据第一K值对待补偿灰阶进行数据补偿，进而实现对驱动TFT的低灰阶K值补偿。\n\n[0063]上述的驱动TFT的灰阶补偿方法的实施例中，通过对驱动TFT的各个灰阶划分高灰阶和低灰阶，对高灰阶进行第一K值补偿，即在待补偿灰阶高于中间灰阶时，采用第一K值对显示的数据信号(data)进行补偿，然后再进行显示；对低灰阶进行第二K值补偿，即在待补偿灰阶低于中间灰阶时，采用第二K值对显示的数据信号(data)进行补偿，然后再进行显示，避免了驱动TFT(driving TFT)的低灰阶K值补偿阶段发生过补，实现显示设备在低灰阶和高灰阶均显示均匀。\n\n[0064]在一个实施例中，如图3所示，提供了一种驱动TFT的灰阶补偿方法，该方法包括以下步骤：\n\n[0065]步骤S310，获取驱动TFT的各个灰阶的侦测电流电压比；将各侦测电流电压比中的最大值确认为第一K值；将对应第一K值的灰阶确认为中间灰阶；将大于或等于中间灰阶的灰阶确认为高灰阶；将小于中间灰阶的灰阶确认为低灰阶；侦测电流电压比为驱动TFT的栅源电流与驱动TFT的栅源电压的比值。\n\n[0066]步骤S320，获取若干个对应低灰阶的侦测电流电压比，对各个对应低灰阶的侦测电流电压比进行平均值处理，得到第二K值。\n\n[0067]例如，可从各个低灰阶中，选取5个对应低灰阶的侦测电流电压比，对选取的5对应低灰阶的侦测电流电压比取平均值，进而可得到第二K值。\n\n[0068]步骤S330，在驱动TFT的待补偿灰阶为低灰阶时，根据第二K值对待补偿灰阶进行数据补偿。\n\n[0069]步骤S340，在驱动TFT的待补偿灰阶为高灰阶时，根据第一K值对待补偿灰阶进行数据补偿。\n\n[0070]其中，上述步骤S310、步骤S330和步骤S340的具体内容过程可参考上文内容，此处不再赘述。\n\n[0071]具体而言，通过对驱动TFT的各个灰阶划分高灰阶和低灰阶，将各侦测电流电压比中的最大值确认为第一K值；对各个对应低灰阶的侦测电流电压比进行平均值处理，进而得到第二K值；对高灰阶进行第一K值补偿，即在待补偿灰阶高于中间灰阶时，采用第一K值对显示的数据信号(data)进行补偿，然后再进行显示；对低灰阶进行第二K值补偿，即在待补偿灰阶低于中间灰阶时，采用第二K值对显示的数据信号(data)进行补偿，然后再进行显示，避免了驱动TFT(driving TFT)的低灰阶K值补偿阶段发生过补，实现显示设备在低灰阶和高灰阶均显示均匀。\n\n[0072]在一个具体的实施例中，对各个对应低灰阶的侦测电流电压比进行拟合处理，得到第二K值的步骤包括：\n\n[0073]将灰阶值为二分之一中间灰阶的灰阶值的低灰阶，确认为中间低灰阶；\n\n[0074]将对应中间低灰阶的侦测电流电压比，确认为第二K值。\n\n[0075]具体地，假设中间灰阶的灰阶值为M，则灰阶值为二分之一M的低灰阶为中间低灰阶。进而可选取对应中间低灰阶的侦测电流电压比，确认为第二K值。\n\n[0076]在一个示例中，假设选取的若干组低灰阶分别为5灰阶、10灰阶、15灰阶、20灰阶和25灰阶，则可将15灰阶确认会中间低灰阶，进而可将对应15灰阶的侦测电流电压比，确认为第二K值。\n\n[0077]在一个示例中，如图4所示，为驱动TFT的灰阶补偿方法的IV曲线示意图。驱动TFT的灰阶补偿的具体过程为：\n\n[0078]根据仿真或实际测量结果确定开始过补的中间灰阶M(该中间灰阶对应的电流为A)。将对应中间灰阶M的侦测电流电压比确认为第一K值(即图4中K1直线的斜率)；分别侦测几组灰阶在低灰阶范围(0～M)的K值，通过线性拟合，得到第二K值(即图4中K2直线的斜率)。在待补偿灰阶低于M灰阶时，补偿数据采用第二K值进行补偿，并在补偿后进行显示。在待补偿灰阶高于M灰阶时，补偿数据采用第一K值进行补偿，并在补偿后进行显示。\n\n[0079]需要说明的是，最终拟合得到的第二K值，可取不同侦测电压下K的平均值或者M/2时的K值，这里方法不做具体限制，且侦测组数不限制。\n\n[0080]在一个示例中，由于感应信号(sense)精度的限制，低灰阶的侦测数据可能存在精度问题，此时需要与仿真数据对比，从而拟合出更适合的第二K值，从而进行更精确的补偿，解决了原来用K1补偿低灰阶的过补问题。\n\n[0081]在一个实施例中，如图5所示，提供了一种驱动TFT的灰阶补偿方法，该方法包括以下步骤：\n\n[0082]步骤S510，获取驱动TFT的各个灰阶的侦测电流电压比；将各侦测电流电压比中的最大值确认为第一K值；将对应第一K值的灰阶确认为中间灰阶；将大于或等于中间灰阶的灰阶确认为高灰阶；将小于中间灰阶的灰阶确认为低灰阶；侦测电流电压比为驱动TFT的栅源电流与驱动TFT的栅源电压的比值。\n\n[0083]步骤S520，将各低灰阶划分为N组低灰阶组；N为正整数。\n\n[0084]例如，假设中间灰阶为128灰阶，则低灰阶的范围为0至127；进而可对0灰阶至127灰阶划分为N组低灰阶组。例如可对0灰阶至127灰阶划分为10组低灰阶组。\n\n[0085]步骤S530，依次对各低灰阶组中对应低灰阶的侦测电流电压比进行拟合处理，得到各低灰阶组的K值。\n\n[0086]具体地，可依次从各组低灰阶组中，选取若干个对应低灰阶的侦测电流电压比，对选取的各个对应低灰阶的侦测电流电压比进行线性拟合处理，进而可得到各低灰阶组的K值。\n\n[0087]步骤S540，在驱动TFT的待补偿灰阶为低灰阶时，采用待补充灰阶落入的低灰阶组所对应的K值对待补偿灰阶进行数据补偿。\n\n[0088]具体地，在需要对驱动TFT的待补偿灰阶进行K值补偿时，可对待补偿灰阶的灰阶值进行判断，在待补偿灰阶的灰阶值落入相应的低灰阶组时，判定该待补偿灰阶为低灰阶时，进而选取待补充灰阶落入的低灰阶组所对应的K值对待补偿灰阶进行数据补偿，并对在补偿后进行显示，防止驱动TFT在低灰阶时发生过补，提高亮度显示效果。\n\n[0089]步骤S550，在驱动TFT的待补偿灰阶为高灰阶时，根据第一K值对待补偿灰阶进行数据补偿。\n\n[0090]其中，上述步骤S510和步骤S550的具体内容过程可参考上文内容，此处不再赘述。\n\n[0091]具体而言，通过对驱动TFT的各个灰阶划分高灰阶和低灰阶，对低灰阶划分为若干组低灰阶组；将各侦测电流电压比中的最大值确认为第一K值；依次对各低灰阶组中对应低灰阶的侦测电流电压比进行拟合处理，得到各低灰阶组的K值；对高灰阶进行第一K值补偿，即在待补偿灰阶高于中间灰阶时，采用第一K值对显示的数据信号(data)进行补偿，然后再进行显示；对低灰阶采用待补充灰阶落入的低灰阶组所对应的K值进行补偿，即在待补偿灰阶落入相应的低灰阶组时，采用相应低灰阶组的K值对显示的数据信号(data)进行补偿，然后再进行显示，避免了驱动TFT(driving TFT)的低灰阶K值补偿阶段发生过补，实现显示设备在低灰阶和高灰阶均显示均匀。\n\n[0092]在一个示例中，如图6所示，为低灰阶分段的IV曲线示意图。低灰阶分段补偿的具体过程为：由于低灰阶的曲线K值变化范围较大，可对低灰阶进行进一步的划分，可分为N组低灰阶组后，再分组进行K值补偿。分别侦测N段低灰阶组(第1段至第N段，N为正整数)在低灰阶范围(0～M)的K值，分别定义为K1、K2……Kn(n为正整数)。在待补偿灰阶低于中间灰阶时，根据待补偿灰阶落入的低灰阶组，分别采用K1～Kn中相应的K值对显示的data进行补偿，然后再进行显示。避免了驱动TFT(driving TFT)的低灰阶K值补偿阶段发生过补，实现显示设备在低灰阶和高灰阶均显示均匀。\n\n[0093]在一个示例中，侦测各组低灰阶组的K值时，每侦测一次，便替换原来的存储的相应低灰阶组的K值，然后全部低灰阶组侦测完成后，开始进行循环侦测。\n\n[0094]在一个具体的实施例中，将各低灰阶划分为N组低灰阶组的步骤包括：\n\n[0095]将各低灰阶平均划分为N组低灰阶组；各低灰阶组包含的低灰阶数量相等。\n\n[0096]例如，低灰阶的范围为0至127灰阶，各低灰阶平均划分为4组低灰阶组，即各组低灰阶组包含的低灰阶数量均为32个。\n\n[0097]在一个具体的实施例中，获取驱动TFT的各个灰阶的侦测电流电压比的步骤包括：\n\n[0098]侦测驱动TFT的输出电压，得到侦测输出电压，并根据驱动TFT的输入电压和侦测输出电压，得到侦测电压；\n\n[0099]侦测驱动TFT的输出电流，得到侦测输出电流，并根据驱动TFT的输入电流和侦测输出电流，得到侦测电流；\n\n[0100]对侦测电流与侦测电压进行比值处理，得到侦测电流电压比。\n\n[0101]其中，驱动TFT输入电压指的是驱动TFT的栅极输入的电压。驱动TFT的输出电压指的是驱动TFT的源极输出的电压。侦测电压指的是输入电流与侦测输出电压之间的差值。驱动TFT输入电流指的是驱动TFT的栅极输入的电流。驱动TFT的输出电流指的是驱动TFT的源极输出的电流。侦测电流指的是输入电流与侦测输出电流之间的差值。\n\n[0102]具体地，可通过对驱动TFT的输出电压和输入电压进行采样，进而可得到侦测电压；通过对驱动TFT的输出电流和输入电流进行采样，进而可得到侦测电流；对侦测电流与侦测电压进行比值处理，进而得到侦测电流电压比。\n\n[0103]应该理解的是，虽然图2、图3和图5的流程图中的各个步骤按照箭头的指示依次显示，但是这些步骤并不是必然按照箭头指示的顺序依次执行。除非本文中有明确的说明，这些步骤的执行并没有严格的顺序限制，这些步骤可以以其它的顺序执行。而且，图2、图3和图5中的至少一部分步骤可以包括多个子步骤或者多个阶段，这些子步骤或者阶段并不必然是在同一时刻执行完成，而是可以在不同的时刻执行，这些子步骤或者阶段的执行顺序也不必然是依次进行，而是可以与其它步骤或者其它步骤的子步骤或者阶段的至少一部分轮流或者交替地执行。\n\n[0104]在一个实施例中，如图7所示，还提供了一种驱动TFT的灰阶补偿装置，该装置包括：\n\n[0105]数据获取及第一K值确认单元710，用于获取驱动TFT的各个灰阶的侦测电流电压比；将各侦测电流电压比中的最大值确认为第一K值；将对应第一K值的灰阶确认为中间灰阶；将大于或等于中间灰阶的灰阶确认为高灰阶；将小于中间灰阶的灰阶确认为低灰阶；侦测电流电压比为驱动TFT的栅源电流与驱动TFT的栅源电压的比值。\n\n[0106]第二K值确认单元720，用于获取若干个对应低灰阶的侦测电流电压比，对各个对应低灰阶的侦测电流电压比进行拟合处理，得到第二K值。\n\n[0107]低灰阶补偿单元730，用于在驱动TFT的待补偿灰阶为低灰阶时，根据第二K值对待补偿灰阶进行数据补偿。\n\n[0108]高灰阶补偿单元740，用于在驱动TFT的待补偿灰阶为高灰阶时，根据第一K值对待补偿灰阶进行数据补偿。\n\n[0109]关于驱动TFT的灰阶补偿装置的具体限定可以参见上文中对于驱动TFT的灰阶补偿方法的限定，在此不再赘述。上述驱动TFT的灰阶补偿装置中的各个模块可全部或部分通过软件、硬件及其组合来实现。上述各模块可以硬件形式内嵌于或独立于显示面板中的处理器中，也可以以软件形式存储于显示面板中的存储器中，以便于处理器调用执行以上各个模块对应的操作。\n\n[0110]另一方面，在一个实施例中，如图8所示，还提供了一种显示面板，该显示面板包括处理设备810以及连接处理设备810的发光设备820；处理设备810用于执行如上述中任一项的驱动TFT的灰阶补偿方法的步骤。\n\n[0111]其中，发光设备820可以但不限于是LCD发光设备或LED发光设备。处理设备810可以但不限于是单片机或DSP。\n\n[0112]具体地，处理设备810可用于执行以下步骤：\n\n[0113]获取驱动TFT的各个灰阶的侦测电流电压比；将各侦测电流电压比中的最大值确认为第一K值；将对应第一K值的灰阶确认为中间灰阶；将大于或等于中间灰阶的灰阶确认为高灰阶；将小于中间灰阶的灰阶确认为低灰阶；侦测电流电压比为驱动TFT的栅源电流与驱动TFT的栅源电压的比值；\n\n[0114]获取若干个对应低灰阶的侦测电流电压比，对各个对应低灰阶的侦测电流电压比进行拟合处理，得到第二K值；\n\n[0115]在驱动TFT的待补偿灰阶为低灰阶时，根据第二K值对待补偿灰阶进行数据补偿；\n\n[0116]在驱动TFT的待补偿灰阶为高灰阶时，根据第一K值对待补偿灰阶进行数据补偿。\n\n[0117]关于显示面板的具体限定可以参见上文中对于驱动TFT的灰阶补偿方法的限定，在此不再赘述。\n\n[0118]在一个实施例中，还提供了一种显示装置，该显示装置包括如上述的显示面板。\n\n[0119]在一个实施例中，显示面板为OLED显示面板，Micro LED显示面板，Mini LED显示面板或μLED显示面板。\n\n[0120]关于显示装置的具体限定可以参见上文中对于驱动TFT的灰阶补偿方法及显示面板的限定，在此不再赘述。\n\n[0121]本领域普通技术人员可以理解实现上述实施例方法中的全部或部分流程，是可以通过计算机程序来指令相关的硬件来完成，所述的计算机程序可存储于一非易失性计算机可读取存储介质中，该计算机程序在执行时，可包括如上述各除法运算方法的实施例的流程。其中，本申请所提供的各实施例中所使用的对存储器、存储、数据库或其它介质的任何引用，均可包括非易失性和/或易失性存储器。非易失性存储器可包括只读存储器(ROM)、可编程ROM(PROM)、电可编程ROM(EPROM)、电可擦除可编程ROM(EEPROM)或闪存。易失性存储器可包括随机存取存储器(RAM)或者外部高速缓冲存储器。作为说明而非局限，RAM以多种形式可得，诸如静态RAM(SRAM)、动态RAM(DRAM)、同步DRAM(SDRAM)、双数据率SDRAM(DDRSDRAM)、增强型SDRAM(ESDRAM)、同步链路(Synchlink)DRAM(SLDRAM)、存储器总线(Rambus)直接RAM(RDRAM)、直接存储器总线动态RAM(DRDRAM)、以及存储器总线动态RAM(RDRAM)等。\n\n[0122]以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。\n\n[0123]以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对申请专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。', '技术领域\n\n[0001]本申请涉及显示技术领域，更具体地说，涉及一种驱动TFT的灰阶补偿方法、装置及其显示面板、显示装置。\n\n背景技术\n\n[0002]随着LED显示器等显示技术的不断发展和进步，带来日益丰富的显示产品。由于以上显示器所采用的驱动都用在驱动TFT的饱和区，且存在器件差异，所以需要对驱动TFT(driving TFT)进行K值的补偿。实验表明，传统K值侦测的方式，在补偿低灰阶时，会发生过补偿的问题，从而导致低灰阶显示偏亮。\n\n[0003]在实现过程中，发明人发现传统技术中至少存在如下问题：传统K值侦测的方式，在补偿低灰阶时，会发生过补偿，导致低灰阶显示偏亮。\n\n发明内容\n\n[0004]基于此，有必要针对传统K值侦测的方式，在补偿低灰阶时，会发生过补偿，导致低灰阶显示偏亮的问题，提供一种驱动TFT的灰阶补偿方法、装置及其显示面板、显示装置。\n\n[0005]为了实现上述目的，本发明实施例提供了一种驱动TFT的灰阶补偿方法，包括以下步骤：\n\n[0006]获取驱动TFT的各个灰阶的侦测电流电压比；将各侦测电流电压比中的最大值确认为第一K值；将对应第一K值的灰阶确认为中间灰阶；将大于或等于中间灰阶的灰阶确认为高灰阶；将小于中间灰阶的灰阶确认为低灰阶；侦测电流电压比为驱动TFT的栅源电流与驱动TFT的栅源电压的比值；\n\n[0007]获取若干个对应低灰阶的侦测电流电压比，对各个对应低灰阶的侦测电流电压比进行拟合处理，得到第二K值；\n\n[0008]在驱动TFT的待补偿灰阶为低灰阶时，根据第二K值对待补偿灰阶进行数据补偿；\n\n[0009]在驱动TFT的待补偿灰阶为高灰阶时，根据第一K值对待补偿灰阶进行数据补偿。\n\n[0010]在其中一个实施例中，对各个对应低灰阶的侦测电流电压比进行拟合处理，得到第二K值的步骤包括：\n\n[0011]对各个对应低灰阶的侦测电流电压比进行平均值处理，得到第二K值。\n\n[0012]在其中一个实施例中，对各个对应低灰阶的侦测电流电压比进行拟合处理，得到第二K值的步骤包括：\n\n[0013]将灰阶值为二分之一中间灰阶的灰阶值的低灰阶，确认为中间低灰阶；\n\n[0014]将对应中间低灰阶的侦测电流电压比，确认为第二K值。\n\n[0015]在其中一个实施例中，还包括步骤：\n\n[0016]将各低灰阶划分为N组低灰阶组；N为正整数；\n\n[0017]依次对各低灰阶组中对应低灰阶的侦测电流电压比进行拟合处理，得到各低灰阶组的K值；\n\n[0018]在驱动TFT的待补偿灰阶为低灰阶时，采用待补充灰阶落入的低灰阶组所对应的K值对待补偿灰阶进行数据补偿。\n\n[0019]在其中一个实施例中，将各低灰阶划分为N组低灰阶组的步骤包括：\n\n[0020]将各低灰阶平均划分为N组低灰阶组；各低灰阶组包含的低灰阶数量相等。\n\n[0021]在其中一个实施例中，获取驱动TFT的各个灰阶的侦测电流电压比的步骤包括：\n\n[0022]侦测驱动TFT的输出电压，得到侦测输出电压，并根据驱动TFT的输入电压和侦测输出电压，得到侦测电压；\n\n[0023]侦测驱动TFT的输出电流，得到侦测输出电流，并根据驱动TFT的输入电流和侦测输出电流，得到侦测电流；\n\n[0024]对侦测电流与侦测电压进行比值处理，得到侦测电流电压比。\n\n[0025]另一方面，本发明实施例还提供了一种驱动TFT的灰阶补偿装置，包括：\n\n[0026]数据获取及第一K值确认单元，用于获取驱动TFT的各个灰阶的侦测电流电压比；将各侦测电流电压比中的最大值确认为第一K值；将对应第一K值的灰阶确认为中间灰阶；将大于或等于中间灰阶的灰阶确认为高灰阶；将小于中间灰阶的灰阶确认为低灰阶；侦测电流电压比为驱动TFT的栅源电流与驱动TFT的栅源电压的比值；\n\n[0027]第二K值确认单元，用于获取若干个对应低灰阶的侦测电流电压比，对各个对应低灰阶的侦测电流电压比进行拟合处理，得到第二K值；\n\n[0028]低灰阶补偿单元，用于在驱动TFT的待补偿灰阶为低灰阶时，根据第二K值对待补偿灰阶进行数据补偿；\n\n[0029]高灰阶补偿单元，用于在驱动TFT的待补偿灰阶为高灰阶时，根据第一K值对待补偿灰阶进行数据补偿。\n\n[0030]另一方面，本发明实施例还提供了一种显示面板，包括处理设备以及连接处理设备的发光设备；\n\n[0031]处理设备用于执行如上述中任一项的驱动TFT的灰阶补偿方法的步骤。\n\n[0032]另一方面，本发明实施例还提供了一种显示装置，包括如上述的显示面板。\n\n[0033]在其中一个实施例中，显示面板为OLED显示面板，Micro LED显示面板，Mini LED显示面板或μLED显示面板。\n\n[0034]上述技术方案中的一个技术方案具有如下优点和有益效果：\n\n[0035]上述的驱动TFT的灰阶补偿方法的各实施例中，获取驱动TFT的各个灰阶的侦测电流电压比；将各侦测电流电压比中的最大值确认为第一K值；将对应第一K值的灰阶确认为中间灰阶；将大于或等于中间灰阶的灰阶确认为高灰阶；将小于中间灰阶的灰阶确认为低灰阶；获取若干个对应低灰阶的侦测电流电压比，对各个对应低灰阶的侦测电流电压比进行拟合处理，得到第二K值；在驱动TFT的待补偿灰阶为低灰阶时，根据第二K值对待补偿灰阶进行数据补偿；在驱动TFT的待补偿灰阶为高灰阶时，根据第一K值对待补偿灰阶进行数据补偿，进而实现对驱动TFT的低灰阶K值补偿。本申请通过对驱动TFT的各个灰阶划分高灰阶和低灰阶，对高灰阶进行第一K值补偿，即在待补偿灰阶高于中间灰阶时，采用第一K值对显示的数据信号(data)进行补偿，然后再进行显示；对低灰阶进行第二K值补偿，即在待补偿灰阶低于中间灰阶时，采用第二K值对显示的数据信号(data)进行补偿，然后再进行显示，避免了驱动TFT(driving TFT)的低灰阶K值补偿阶段发生过补，实现显示设备在低灰阶和高灰阶均显示均匀。\n\n附图说明\n\n[0036]下面将结合附图及实施例对本申请作进一步说明，附图中：\n\n[0037]图1为一个实施例中驱动TFT的灰阶补偿方法的应用环境图；\n\n[0038]图2为一个实施例中驱动TFT的灰阶补偿方法的第一流程示意图；\n\n[0039]图3为一个实施例中驱动TFT的灰阶补偿方法的第二流程示意图；\n\n[0040]图4为一个实施例中驱动TFT的灰阶补偿方法的IV曲线示意图；\n\n[0041]图5为一个实施例中驱动TFT的灰阶补偿方法的第三流程示意图；\n\n[0042]图6为一个实施例中驱动TFT的灰阶补偿方法的低灰阶分段IV曲线示意图；\n\n[0043]图7为一个实施例中驱动TFT的灰阶补偿装置的方框示意图；\n\n[0044]图8为一个实施例中显示面板的结构示意图。\n\n具体实施方式\n\n[0045]为了便于理解本申请，下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的首选实施例。但是，本申请可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本申请的公开内容更加透彻全面。\n\n[0046]需要说明的是，当一个元件被认为是“连接”另一个元件，它可以是直接连接到另一个元件并与之结合为一体，或者可能同时存在居中元件。本文所使用的术语“安装”、“一端”、“另一端”以及类似的表述只是为了说明的目的。\n\n[0047]除非另有定义，本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本申请。本文所使用的术语“及/或”包括一个或多个相关的所列项目的任意的和所有的组合。\n\n[0048]本申请提供的驱动TFT的灰阶补偿方法，可以应用于如图1所示的应用环境中。其中，显示面板可包括处理设备110和发光设备120。处理设备110与发光设备120连接，其中，处理设备110可包括处理芯片；处理芯片可以但不限于是单片机、DSP(Digital SignalProcessing，数字信号处理)处理器和ARM(Advanced RISC Machines)处理器。发光设备120可以但不限于是LCD发光设备和LED发光设备。\n\n[0049]在一个实施例中，如图2所示，提供了一种驱动TFT的灰阶补偿方法，该方法包括以下步骤：\n\n[0050]步骤S210，获取驱动TFT的各个灰阶的侦测电流电压比；将各侦测电流电压比中的最大值确认为第一K值；将对应第一K值的灰阶确认为中间灰阶；将大于或等于中间灰阶的灰阶确认为高灰阶；将小于中间灰阶的灰阶确认为低灰阶；侦测电流电压比为驱动TFT的栅源电流与驱动TFT的栅源电压的比值。\n\n[0051]其中，驱动TFT(Thin Film Transistor，薄膜晶体管)指的是驱动型薄膜晶体管器件；驱动型TFT可用于驱动相应的子像素发光。侦测电流电压比指的是驱动TFT的栅源电流与该驱动TFT的栅源电压的比值。灰阶指的是将最亮与最暗之间的亮度变化，区分为若干份。在一个示例中，以8bit的显示面板为例，能表现2的8次方，等于256个亮度层次，即该显示面板有256个灰阶(即0灰阶至255灰阶)。第一K值指的是常量K值。第一K值与驱动TFT的特性相关。高灰阶指的是灰阶值大于或等于中间灰阶的灰阶值的灰阶。低灰阶指的是灰阶值小于中间灰阶的灰阶值的灰阶。在一个示例中，假设中间灰阶为128灰阶，则若待补偿灰阶的灰阶值大于或等于128，则该待补偿灰阶为高灰阶；若待补偿灰阶的灰阶值小于128，则该待补偿灰阶为低灰阶。\n\n[0052]需要说明的是，驱动TFT的栅源电流与驱动TFT的栅源电压可根据仿真实验得到；驱动TFT的栅源电流与驱动TFT的栅源电压也可以通过实际测量得到。\n\n[0053]具体地，可通过侦测驱动TFT在各个灰阶下的栅源电流和栅源电压，并依次对各个灰阶下的栅源电流和栅源电压进行比值处理，进而可得到驱动TFT的各个灰阶的侦测电流电压比。可通过查询各侦测电流电压比中的最大值，并将将各侦测电流电压比中的最大值确认为第一K值，将对应第一K值的灰阶确认为中间灰阶；将大于或等于中间灰阶的灰阶确认为高灰阶；将小于中间灰阶的灰阶确认为低灰阶，实现对灰阶的分段划分。\n\n[0054]步骤S220，获取若干个对应低灰阶的侦测电流电压比，对各个对应低灰阶的侦测电流电压比进行拟合处理，得到第二K值。\n\n[0055]其中，第二K值指的是常量K值。第二K值与驱动TFT的特性相关。\n\n[0056]具体地，可从各个低灰阶中，选取若干个对应低灰阶的侦测电流电压比，对选取的各个对应低灰阶的侦测电流电压比进行线性拟合处理，进而可得到第二K值。\n\n[0057]在一个示例中，可选取各个对应低灰阶的侦测电流电压比，对各个对应低灰阶的侦测电流电压比进行线性拟合处理，得到拟合直线；并根据该拟合直线得到直线斜率，进而得到第二K值。\n\n[0058]步骤S230，在驱动TFT的待补偿灰阶为低灰阶时，根据第二K值对待补偿灰阶进行数据补偿。\n\n[0059]具体地，在需要对驱动TFT的待补偿灰阶进行K值补偿时，可对待补偿灰阶的灰阶值进行判断，在待补偿灰阶的灰阶值小于中间灰阶的灰阶值时，判定该待补偿灰阶为低灰阶时，进而选取第二K值对待补偿灰阶进行数据补偿，并对在补偿后进行显示，防止驱动TFT在低灰阶时发生过补，提高亮度显示效果。\n\n[0060]步骤S240，在驱动TFT的待补偿灰阶为高灰阶时，根据第一K值对待补偿灰阶进行数据补偿。\n\n[0061]具体地，在需要对驱动TFT的待补偿灰阶进行K值补偿时，可对待补偿灰阶的灰阶值进行判断，在待补偿灰阶的灰阶值大于或等于中间灰阶的灰阶值时，判定该待补偿灰阶为高灰阶时，进而选取第一K值对待补偿灰阶进行数据补偿，并对在补偿后进行显示，提高亮度显示效果。\n\n[0062]具体而言，通过获取驱动TFT的各个灰阶的侦测电流电压比；将各侦测电流电压比中的最大值确认为第一K值；将对应第一K值的灰阶确认为中间灰阶；将大于或等于中间灰阶的灰阶确认为高灰阶；将小于中间灰阶的灰阶确认为低灰阶；通过获取若干个对应低灰阶的侦测电流电压比，对各个对应低灰阶的侦测电流电压比进行拟合处理，进而得到第二K值；在驱动TFT的待补偿灰阶为低灰阶时，根据第二K值对待补偿灰阶进行数据补偿；在驱动TFT的待补偿灰阶为高灰阶时，根据第一K值对待补偿灰阶进行数据补偿，进而实现对驱动TFT的低灰阶K值补偿。\n\n[0063]上述的驱动TFT的灰阶补偿方法的实施例中，通过对驱动TFT的各个灰阶划分高灰阶和低灰阶，对高灰阶进行第一K值补偿，即在待补偿灰阶高于中间灰阶时，采用第一K值对显示的数据信号(data)进行补偿，然后再进行显示；对低灰阶进行第二K值补偿，即在待补偿灰阶低于中间灰阶时，采用第二K值对显示的数据信号(data)进行补偿，然后再进行显示，避免了驱动TFT(driving TFT)的低灰阶K值补偿阶段发生过补，实现显示设备在低灰阶和高灰阶均显示均匀。\n\n[0064]在一个实施例中，如图3所示，提供了一种驱动TFT的灰阶补偿方法，该方法包括以下步骤：\n\n[0065]步骤S310，获取驱动TFT的各个灰阶的侦测电流电压比；将各侦测电流电压比中的最大值确认为第一K值；将对应第一K值的灰阶确认为中间灰阶；将大于或等于中间灰阶的灰阶确认为高灰阶；将小于中间灰阶的灰阶确认为低灰阶；侦测电流电压比为驱动TFT的栅源电流与驱动TFT的栅源电压的比值。\n\n[0066]步骤S320，获取若干个对应低灰阶的侦测电流电压比，对各个对应低灰阶的侦测电流电压比进行平均值处理，得到第二K值。\n\n[0067]例如，可从各个低灰阶中，选取5个对应低灰阶的侦测电流电压比，对选取的5对应低灰阶的侦测电流电压比取平均值，进而可得到第二K值。\n\n[0068]步骤S330，在驱动TFT的待补偿灰阶为低灰阶时，根据第二K值对待补偿灰阶进行数据补偿。\n\n[0069]步骤S340，在驱动TFT的待补偿灰阶为高灰阶时，根据第一K值对待补偿灰阶进行数据补偿。\n\n[0070]其中，上述步骤S310、步骤S330和步骤S340的具体内容过程可参考上文内容，此处不再赘述。\n\n[0071]具体而言，通过对驱动TFT的各个灰阶划分高灰阶和低灰阶，将各侦测电流电压比中的最大值确认为第一K值；对各个对应低灰阶的侦测电流电压比进行平均值处理，进而得到第二K值；对高灰阶进行第一K值补偿，即在待补偿灰阶高于中间灰阶时，采用第一K值对显示的数据信号(data)进行补偿，然后再进行显示；对低灰阶进行第二K值补偿，即在待补偿灰阶低于中间灰阶时，采用第二K值对显示的数据信号(data)进行补偿，然后再进行显示，避免了驱动TFT(driving TFT)的低灰阶K值补偿阶段发生过补，实现显示设备在低灰阶和高灰阶均显示均匀。\n\n[0072]在一个具体的实施例中，对各个对应低灰阶的侦测电流电压比进行拟合处理，得到第二K值的步骤包括：\n\n[0073]将灰阶值为二分之一中间灰阶的灰阶值的低灰阶，确认为中间低灰阶；\n\n[0074]将对应中间低灰阶的侦测电流电压比，确认为第二K值。\n\n[0075]具体地，假设中间灰阶的灰阶值为M，则灰阶值为二分之一M的低灰阶为中间低灰阶。进而可选取对应中间低灰阶的侦测电流电压比，确认为第二K值。\n\n[0076]在一个示例中，假设选取的若干组低灰阶分别为5灰阶、10灰阶、15灰阶、20灰阶和25灰阶，则可将15灰阶确认会中间低灰阶，进而可将对应15灰阶的侦测电流电压比，确认为第二K值。\n\n[0077]在一个示例中，如图4所示，为驱动TFT的灰阶补偿方法的IV曲线示意图。驱动TFT的灰阶补偿的具体过程为：\n\n[0078]根据仿真或实际测量结果确定开始过补的中间灰阶M(该中间灰阶对应的电流为A)。将对应中间灰阶M的侦测电流电压比确认为第一K值(即图4中K1直线的斜率)；分别侦测几组灰阶在低灰阶范围(0～M)的K值，通过线性拟合，得到第二K值(即图4中K2直线的斜率)。在待补偿灰阶低于M灰阶时，补偿数据采用第二K值进行补偿，并在补偿后进行显示。在待补偿灰阶高于M灰阶时，补偿数据采用第一K值进行补偿，并在补偿后进行显示。\n\n[0079]需要说明的是，最终拟合得到的第二K值，可取不同侦测电压下K的平均值或者M/2时的K值，这里方法不做具体限制，且侦测组数不限制。\n\n[0080]在一个示例中，由于感应信号(sense)精度的限制，低灰阶的侦测数据可能存在精度问题，此时需要与仿真数据对比，从而拟合出更适合的第二K值，从而进行更精确的补偿，解决了原来用K1补偿低灰阶的过补问题。\n\n[0081]在一个实施例中，如图5所示，提供了一种驱动TFT的灰阶补偿方法，该方法包括以下步骤：\n\n[0082]步骤S510，获取驱动TFT的各个灰阶的侦测电流电压比；将各侦测电流电压比中的最大值确认为第一K值；将对应第一K值的灰阶确认为中间灰阶；将大于或等于中间灰阶的灰阶确认为高灰阶；将小于中间灰阶的灰阶确认为低灰阶；侦测电流电压比为驱动TFT的栅源电流与驱动TFT的栅源电压的比值。\n\n[0083]步骤S520，将各低灰阶划分为N组低灰阶组；N为正整数。\n\n[0084]例如，假设中间灰阶为128灰阶，则低灰阶的范围为0至127；进而可对0灰阶至127灰阶划分为N组低灰阶组。例如可对0灰阶至127灰阶划分为10组低灰阶组。\n\n[0085]步骤S530，依次对各低灰阶组中对应低灰阶的侦测电流电压比进行拟合处理，得到各低灰阶组的K值。\n\n[0086]具体地，可依次从各组低灰阶组中，选取若干个对应低灰阶的侦测电流电压比，对选取的各个对应低灰阶的侦测电流电压比进行线性拟合处理，进而可得到各低灰阶组的K值。\n\n[0087]步骤S540，在驱动TFT的待补偿灰阶为低灰阶时，采用待补充灰阶落入的低灰阶组所对应的K值对待补偿灰阶进行数据补偿。\n\n[0088]具体地，在需要对驱动TFT的待补偿灰阶进行K值补偿时，可对待补偿灰阶的灰阶值进行判断，在待补偿灰阶的灰阶值落入相应的低灰阶组时，判定该待补偿灰阶为低灰阶时，进而选取待补充灰阶落入的低灰阶组所对应的K值对待补偿灰阶进行数据补偿，并对在补偿后进行显示，防止驱动TFT在低灰阶时发生过补，提高亮度显示效果。\n\n[0089]步骤S550，在驱动TFT的待补偿灰阶为高灰阶时，根据第一K值对待补偿灰阶进行数据补偿。\n\n[0090]其中，上述步骤S510和步骤S550的具体内容过程可参考上文内容，此处不再赘述。\n\n[0091]具体而言，通过对驱动TFT的各个灰阶划分高灰阶和低灰阶，对低灰阶划分为若干组低灰阶组；将各侦测电流电压比中的最大值确认为第一K值；依次对各低灰阶组中对应低灰阶的侦测电流电压比进行拟合处理，得到各低灰阶组的K值；对高灰阶进行第一K值补偿，即在待补偿灰阶高于中间灰阶时，采用第一K值对显示的数据信号(data)进行补偿，然后再进行显示；对低灰阶采用待补充灰阶落入的低灰阶组所对应的K值进行补偿，即在待补偿灰阶落入相应的低灰阶组时，采用相应低灰阶组的K值对显示的数据信号(data)进行补偿，然后再进行显示，避免了驱动TFT(driving TFT)的低灰阶K值补偿阶段发生过补，实现显示设备在低灰阶和高灰阶均显示均匀。\n\n[0092]在一个示例中，如图6所示，为低灰阶分段的IV曲线示意图。低灰阶分段补偿的具体过程为：由于低灰阶的曲线K值变化范围较大，可对低灰阶进行进一步的划分，可分为N组低灰阶组后，再分组进行K值补偿。分别侦测N段低灰阶组(第1段至第N段，N为正整数)在低灰阶范围(0～M)的K值，分别定义为K1、K2……Kn(n为正整数)。在待补偿灰阶低于中间灰阶时，根据待补偿灰阶落入的低灰阶组，分别采用K1～Kn中相应的K值对显示的data进行补偿，然后再进行显示。避免了驱动TFT(driving TFT)的低灰阶K值补偿阶段发生过补，实现显示设备在低灰阶和高灰阶均显示均匀。\n\n[0093]在一个示例中，侦测各组低灰阶组的K值时，每侦测一次，便替换原来的存储的相应低灰阶组的K值，然后全部低灰阶组侦测完成后，开始进行循环侦测。\n\n[0094]在一个具体的实施例中，将各低灰阶划分为N组低灰阶组的步骤包括：\n\n[0095]将各低灰阶平均划分为N组低灰阶组；各低灰阶组包含的低灰阶数量相等。\n\n[0096]例如，低灰阶的范围为0至127灰阶，各低灰阶平均划分为4组低灰阶组，即各组低灰阶组包含的低灰阶数量均为32个。\n\n[0097]在一个具体的实施例中，获取驱动TFT的各个灰阶的侦测电流电压比的步骤包括：\n\n[0098]侦测驱动TFT的输出电压，得到侦测输出电压，并根据驱动TFT的输入电压和侦测输出电压，得到侦测电压；\n\n[0099]侦测驱动TFT的输出电流，得到侦测输出电流，并根据驱动TFT的输入电流和侦测输出电流，得到侦测电流；\n\n[0100]对侦测电流与侦测电压进行比值处理，得到侦测电流电压比。\n\n[0101]其中，驱动TFT输入电压指的是驱动TFT的栅极输入的电压。驱动TFT的输出电压指的是驱动TFT的源极输出的电压。侦测电压指的是输入电流与侦测输出电压之间的差值。驱动TFT输入电流指的是驱动TFT的栅极输入的电流。驱动TFT的输出电流指的是驱动TFT的源极输出的电流。侦测电流指的是输入电流与侦测输出电流之间的差值。\n\n[0102]具体地，可通过对驱动TFT的输出电压和输入电压进行采样，进而可得到侦测电压；通过对驱动TFT的输出电流和输入电流进行采样，进而可得到侦测电流；对侦测电流与侦测电压进行比值处理，进而得到侦测电流电压比。\n\n[0103]应该理解的是，虽然图2、图3和图5的流程图中的各个步骤按照箭头的指示依次显示，但是这些步骤并不是必然按照箭头指示的顺序依次执行。除非本文中有明确的说明，这些步骤的执行并没有严格的顺序限制，这些步骤可以以其它的顺序执行。而且，图2、图3和图5中的至少一部分步骤可以包括多个子步骤或者多个阶段，这些子步骤或者阶段并不必然是在同一时刻执行完成，而是可以在不同的时刻执行，这些子步骤或者阶段的执行顺序也不必然是依次进行，而是可以与其它步骤或者其它步骤的子步骤或者阶段的至少一部分轮流或者交替地执行。\n\n[0104]在一个实施例中，如图7所示，还提供了一种驱动TFT的灰阶补偿装置，该装置包括：\n\n[0105]数据获取及第一K值确认单元710，用于获取驱动TFT的各个灰阶的侦测电流电压比；将各侦测电流电压比中的最大值确认为第一K值；将对应第一K值的灰阶确认为中间灰阶；将大于或等于中间灰阶的灰阶确认为高灰阶；将小于中间灰阶的灰阶确认为低灰阶；侦测电流电压比为驱动TFT的栅源电流与驱动TFT的栅源电压的比值。\n\n[0106]第二K值确认单元720，用于获取若干个对应低灰阶的侦测电流电压比，对各个对应低灰阶的侦测电流电压比进行拟合处理，得到第二K值。\n\n[0107]低灰阶补偿单元730，用于在驱动TFT的待补偿灰阶为低灰阶时，根据第二K值对待补偿灰阶进行数据补偿。\n\n[0108]高灰阶补偿单元740，用于在驱动TFT的待补偿灰阶为高灰阶时，根据第一K值对待补偿灰阶进行数据补偿。\n\n[0109]关于驱动TFT的灰阶补偿装置的具体限定可以参见上文中对于驱动TFT的灰阶补偿方法的限定，在此不再赘述。上述驱动TFT的灰阶补偿装置中的各个模块可全部或部分通过软件、硬件及其组合来实现。上述各模块可以硬件形式内嵌于或独立于显示面板中的处理器中，也可以以软件形式存储于显示面板中的存储器中，以便于处理器调用执行以上各个模块对应的操作。\n\n[0110]另一方面，在一个实施例中，如图8所示，还提供了一种显示面板，该显示面板包括处理设备810以及连接处理设备810的发光设备820；处理设备810用于执行如上述中任一项的驱动TFT的灰阶补偿方法的步骤。\n\n[0111]其中，发光设备820可以但不限于是LCD发光设备或LED发光设备。处理设备810可以但不限于是单片机或DSP。\n\n[0112]具体地，处理设备810可用于执行以下步骤：\n\n[0113]获取驱动TFT的各个灰阶的侦测电流电压比；将各侦测电流电压比中的最大值确认为第一K值；将对应第一K值的灰阶确认为中间灰阶；将大于或等于中间灰阶的灰阶确认为高灰阶；将小于中间灰阶的灰阶确认为低灰阶；侦测电流电压比为驱动TFT的栅源电流与驱动TFT的栅源电压的比值；\n\n[0114]获取若干个对应低灰阶的侦测电流电压比，对各个对应低灰阶的侦测电流电压比进行拟合处理，得到第二K值；\n\n[0115]在驱动TFT的待补偿灰阶为低灰阶时，根据第二K值对待补偿灰阶进行数据补偿；\n\n[0116]在驱动TFT的待补偿灰阶为高灰阶时，根据第一K值对待补偿灰阶进行数据补偿。\n\n[0117]关于显示面板的具体限定可以参见上文中对于驱动TFT的灰阶补偿方法的限定，在此不再赘述。\n\n[0118]在一个实施例中，还提供了一种显示装置，该显示装置包括如上述的显示面板。\n\n[0119]在一个实施例中，显示面板为OLED显示面板，Micro LED显示面板，Mini LED显示面板或μLED显示面板。\n\n[0120]关于显示装置的具体限定可以参见上文中对于驱动TFT的灰阶补偿方法及显示面板的限定，在此不再赘述。\n\n[0121]本领域普通技术人员可以理解实现上述实施例方法中的全部或部分流程，是可以通过计算机程序来指令相关的硬件来完成，所述的计算机程序可存储于一非易失性计算机可读取存储介质中，该计算机程序在执行时，可包括如上述各除法运算方法的实施例的流程。其中，本申请所提供的各实施例中所使用的对存储器、存储、数据库或其它介质的任何引用，均可包括非易失性和/或易失性存储器。非易失性存储器可包括只读存储器(ROM)、可编程ROM(PROM)、电可编程ROM(EPROM)、电可擦除可编程ROM(EEPROM)或闪存。易失性存储器可包括随机存取存储器(RAM)或者外部高速缓冲存储器。作为说明而非局限，RAM以多种形式可得，诸如静态RAM(SRAM)、动态RAM(DRAM)、同步DRAM(SDRAM)、双数据率SDRAM(DDRSDRAM)、增强型SDRAM(ESDRAM)、同步链路(Synchlink)DRAM(SLDRAM)、存储器总线(Rambus)直接RAM(RDRAM)、直接存储器总线动态RAM(DRDRAM)、以及存储器总线动态RAM(RDRAM)等。\n\n[0122]以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。\n\n[0123]以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对申请专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10876, 23930, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示基板及制备方法。\n\n背景技术\n\n[0002]目前，有机发光二极体(Organic Light-Emitting Diode，OLED)或者微型发光二极管(Micro Light-Emitting Diode，Micro-LED)作为电流驱动器件，需要较大的电流通过能力、较好的器件稳定性、面内阈值电压(Threshold Voltage，Vth)的均匀性以及低漏电流等特性。研究发现，顶栅自对准氧化物半导体薄膜晶体管(Top Gate IGZO Thin FilmTransistor)具有较高的迁移率，较小寄生电容和低漏电流，比较适合作为电流驱动显示电路。对于底发射类显示基板而言，驱动薄膜晶体管(TFT)底部最好带有光阻挡层，可以阻挡环境光对TFT的特性影响，以及金属类的遮光层连接到源极之后对TFT的输出特性曲线有稳定作用。\n\n[0003]然而，带有遮光层的顶栅自对准氧化物半导体薄膜晶体管(Top Gate IGZO ThinFilm Transistor)最少需要8道掩膜版(Mask)。由于掩膜版(Mask)造价昂贵，采用多次构图工艺制备显示基板，工艺复杂，且开发费用较高。同时，随着显示器的发展，越来越多的顶部出光的自发光类显示成为主流，对于TFT的遮光也有新的要求。\n\n[0004]综上所述，因此需提供一种显示基板及制备方法，以解决上述技术问题。\n\n发明内容\n\n[0005]本发明提供一种显示基板及制备方法，以解决现有的显示基板及制备方法，由于带有遮光层的顶栅自对准氧化物半导体薄膜晶体管最少需要8道掩膜版，导致工艺复杂且开发费用较高的技术问题。\n\n[0006]为达到上述目的，本发明实施例采用如下技术方案：\n\n[0007]本发明实施例提供一种显示基板，所述显示基板至少包括：衬底基板以及分别形成于所述衬底基板上的第一薄膜晶体管、存储电容、第二薄膜晶体管和发光单元，且所述第一薄膜晶体管为无遮光层的薄膜晶体管，所述第二薄膜晶体管为具有顶部遮光层的薄膜晶体管；所述第二薄膜晶体管还包括设置于所述衬底基板上的缓冲层、设置于所述缓冲层上的第二有源层、设置于所述第二有源层上的第二栅极绝缘层、设置于所述第二栅极绝缘层上的第二栅极、设置于所述第二有源层上并完全覆盖所述第二栅极绝缘层以及所述第二栅极的第二层间绝缘层、设置于所述第二层间绝缘层边缘两端的第二漏极和第二源级、设置于所述第二层间绝缘层上的遮光层以及完全覆盖所述第二漏极、所述第二源级和所述遮光层的钝化层；\n\n[0008]其中，所述第二漏极、所述第二源级和所述遮光层均通过第一金属薄膜经图案化后形成，所述遮光层完全覆盖所述第二栅极所在的区域，且所述遮光层的第一端延伸至所述第二漏极所在的区域。\n\n[0009]在一些实施例中，所述遮光层的边缘两端至所述第二栅极的边缘两端之间在水平方向上的距离分别为0-5um。\n\n[0010]在一些实施例中，所述遮光层还具有与所述第一端相对的第二端，所述第二端与所述第二源级电连接。\n\n[0011]在一些实施例中，所述遮光层为电悬挂状态，所述遮光层的所述第一端未电连接所述第二漏极，与所述第一端相对的第二端未电连接所述第二源级。\n\n[0012]在一些实施例中，所述第一薄膜晶体管还包括所述缓冲层、设置于所述缓冲层上并与所述第二有源层间隔设置的第一有源层、设置于所述第一有源层上的第一栅极绝缘层、设置于所述第一栅极绝缘层上的第一栅极、设置于所述第一有源层上并完全覆盖所述第一栅极绝缘层以及所述第一栅极的第一层间绝缘层、设置于所述第一层间绝缘层边缘两端的第一漏极与第一源级以及所述钝化层。\n\n[0013]在一些实施例中，所述存储电容还包括所述缓冲层、设置于所述缓冲层上的第三栅极绝缘层、设置于所述第三栅极绝缘层上的第一金属层、设置于所述第一金属层上的第三层间绝缘层、设置于所述第三层间绝缘层上的第二金属层以及所述钝化层。\n\n[0014]在一些实施例中，所述发光单元包括微型发光二极管发光层或者有机发光二极管发光单元。\n\n[0015]在一些实施例中，所述Micro-LED发光单元包括Micro-LED半导体层、连接电极、第一电极以及第二电极，所述第一电极通过焊接层与所述显示基板上的像素电极电连接，所述第二电极通过另一所述焊接层与所述显示基板上的公共电极电连接。\n\n[0016]本发明实施例还提供一种如上所述显示基板的制备方法，其特征在于，所述方法包括：\n\n[0017]S10，在一衬底基板上沉积第一无机绝缘薄膜后形成缓冲层，之后在所述缓冲层上沉积半导体层薄膜，所述半导体层薄膜经第一道光刻工艺图案化后分别形成间隔设置的第一有源层以及第二有源层；\n\n[0018]S20，在所述衬底基板上方沉积第二无机绝缘薄膜，所述第二无机绝缘薄膜经刻蚀工艺后分别形成设置于所述第一有源层上的第一栅极绝缘层、设置于所述第二有源层上的第二栅极绝缘层以及设置于所述缓冲层上的第三栅极绝缘层，之后在所述衬底基板上沉积第一金属薄膜，所述第一金属薄膜经第二道光刻工艺图案化后分别形成第一栅极、第二栅极以及设置于所述第三栅极绝缘层上的第一金属层；\n\n[0019]S30，在所述衬底基板上方沉积第三无机绝缘薄膜，所述第三无机绝缘薄膜经第三道光刻工艺图案化后分别形成第一层间绝缘层、第二层间绝缘层、设置于所述第一金属层上的第三层间绝缘层以及设置于所述缓冲层上的第四层间绝缘层；\n\n[0020]S40，在所述衬底基板上方镀一层所述第一金属薄膜，以第四道光刻工艺将所述第一金属薄膜图案化后形成第一漏级、第一源级、第二金属层、第二漏级、遮光层、第二源级以及第三金属层，所述遮光层完全覆盖所述第二栅极，且所述遮光层的第一端延伸至所述第二漏极所在的区域；\n\n[0021]S50，在所述衬底基板上方沉积第四无机绝缘薄膜，所述第四无机绝缘薄膜经第五道光刻工艺图案化后形成钝化层，所述钝化层完全覆盖所述第一漏级、所述第一源级、所述第二金属层、所述第二漏级、所述遮光层以及部分所述第二源级；\n\n[0022]S60，在所述第三金属层以及部分所述第二源级上镀一层第二金属薄膜，所述第二金属薄膜经第六道光刻工艺图案化后形成间隔设置的公共电极以及像素电极；\n\n[0023]S70，在所述衬底基板上制备发光单元，最后得到所述显示基板。\n\n[0024]在一些实施例中，所述第一金属薄膜以及所述第二金属薄膜为选自Mo金属层、Mo/Al/Mo金属层、Mo/Cu金属层、Mo/Cu/IZO金属层、IZO/Cu/IZO金属层、Mo/Cu/ITO金属层、Ni/Cu/Ni金属层、MoTiNi/Cu/MoTiNi金属层、NiCr/Cu/NiCr金属层以及CuNb金属层中的任意一种。\n\n[0025]本发明实施例所提供的显示基板及制备方法，将顶栅自对准氧化物半导体薄膜晶体管中的遮光层设置在顶部并完全覆盖对应栅极所在区域，且与源漏极金属层经同一构图工艺图案化而成，此遮光层不但能够给栅自对准氧化物半导体薄膜晶体管带来顶部遮光作用，还能稳定栅自对准氧化物半导体薄膜晶体管的输出特性，同时制备包含此遮光层的顶栅自对准氧化物半导体薄膜晶体管只需6道光刻工艺即可制成，制程比传统的简单且成本较低。\n\n附图说明\n\n[0026]下面结合附图，通过对本发明的具体实施方式进行详细描述。\n\n[0027]图1为本发明实施例提供的显示基板的电路示意图。\n\n[0028]图2A为本发明第一实施例提供的显示基板的结构示意图。\n\n[0029]图2B为本发明第二实施例提供的显示基板的结构示意图。\n\n[0030]图3为本发明实施例提供的显示面板的制备方法的步骤流程图。\n\n[0031]图4A-4G为本发明实施例提供的显示面板的制备方法的结构示意图。\n\n具体实施方式\n\n[0032]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0033]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0034]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0035]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0036]下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0037]本发明实施例针对现有的显示面板及制备方法，由于带有遮光层的顶栅自对准氧化物半导体薄膜晶体管最少需要8道掩膜版。导致制备过程中工艺复杂，且开发费用较高；同时，现有结构的遮光层难以阻挡环境光对TFT的特性影响的技术问题，本实施例能够解决该缺陷。\n\n[0038]如图1所示，为本发明实施例提供的显示基板的3T1C(3transistor1capacitance，3个薄膜晶体管T1、T2、T3，1个存储电容Cst)像素驱动电路，其中，Vdata为数据驱动电压，Vgate为扫描电压，Vdd为恒流驱动电压，Vss为输出电压。薄膜晶体管T1为开关薄膜晶体管，且为无遮光层的薄膜晶体管；薄膜晶体管T2为驱动薄膜晶体管，且为具有顶部遮光层的薄膜晶体管，薄膜晶体管T3为感应薄膜晶体管，且为无遮光层的薄膜晶体管。\n\n[0039]如图2A所示，为本发明第一实施例提供的显示基板的结构示意图。所述显示基板至少包括：衬底基板101以及分别形成于所述衬底基板101上的第一薄膜晶体管T1、存储电容Cst、第二薄膜晶体管T2和发光单元109，且所述第一薄膜晶体管为T1无遮光层的薄膜晶体管，所述第二薄膜晶体管T2为具有顶部遮光层的薄膜晶体管。\n\n[0040]具体地，所述第二薄膜晶体管T2还包括设置于所述衬底基板101上的缓冲层102、设置于所述缓冲层102上的第二有源层1032、设置于所述第二有源层1032上的第二栅极绝缘层1042、设置于所述第二栅极绝缘层1042上的第二栅极1052、设置于所述第二有源层1032上并完全覆盖所述第二栅极绝缘层1042以及所述第二栅极1052的第二层间绝缘层1062、设置于所述第二层间绝缘层1062边缘两端的第二漏极1074和第二源级1076、设置于所述第二层间绝缘层1062上的遮光层1075以及完全覆盖所述第二漏极1074、所述第二源级1076和所述遮光层1075的钝化层108；\n\n[0041]其中，所述第二漏极1074、所述第二源级1076和所述遮光层1075均通过第一金属薄膜经图案化后形成，所述遮光层1075完全覆盖所述第二栅极1074所在的区域，且所述遮光层1075的第一端延伸至所述第二漏极1074所在的区域。\n\n[0042]具体地，所述遮光层1075的边缘两端至所述第二栅极1074的边缘两端之间在水平方向上的距离分别为0-5um。\n\n[0043]在本发明第一实施例中，所述遮光层1075还具有与所述第一端相对的第二端，所述第二端与所述第二源级1076电连接。\n\n[0044]具体地，所述第一薄膜晶体管T1还包括所述缓冲层102、设置于所述缓冲层102上并与所述第二有源层1032间隔设置的第一有源层1031、设置于所述第一有源层1031上的第一栅极绝缘层1041、设置于所述第一栅极绝缘层1041上的第一栅极1051、设置于所述第一有源层1031上并完全覆盖所述第一栅极绝缘层1041以及所述第一栅极1051的第一层间绝缘层1061、设置于所述第一层间绝缘层1061边缘两端的第一漏极1071与第一源级1072以及所述钝化层108。\n\n[0045]具体地，所述存储电容Cst还包括所述缓冲层102、设置于所述缓冲层102上的第三栅极绝缘层1043、设置于所述第三栅极绝缘层1043上的第一金属层1053、设置于所述第一金属层1053上的第三层间绝缘层1063、设置于所述第三层间绝缘层1063上的第二金属层1073以及所述钝化层108。\n\n[0046]具体地，所述发光单元109包括Micro-LED发光层或者OLED发光单元。在本发明第一实施例中，所述发光单元109优选为Micro-LED发光层，所述Micro-LED发光单元包括Micro-LED半导体层1091、连接电极1092、第一电极1093以及第二电极1094，所述第一电极1093通过焊接层1095与所述显示基板上的像素电极1076电连接，所述第二电极1094通过另一所述焊接层1095与所述显示基板上的公共电极1077电连接。\n\n[0047]具体地，所述缓冲层102上的边缘两端还设置有第四层间绝缘层1064，所述第四层间绝缘层1064分别与部分所述第一有源层1031以及部分所述第二有源层1032相连。\n\n[0048]如图2B所示，为本发明第二实施例提供的显示基板的结构示意图。本发明第二实施例提供的显示基板与本发明第一实施例提供的显示基板的不同之处仅在于，所述遮光层1075为电悬挂状态，所述遮光层1075的所述第一端未电连接所述第二漏极1074，与所述第一端相对的第二端未电连接所述第二源级1076。\n\n[0049]如图3所示，本发明实施例还提供一种如上所述显示基板的制备方法，所述方法具体包括：\n\n[0050]S10，在一衬底基板101上依次制备第一金属电路层102、第三钝化层103以及硬保护层201，所述第一金属电路层101由第一金属薄膜经图案化形成，所述第三钝化层103形成于所述衬底基板101上并部分覆盖所述第一金属电路层102，所述硬保护层201形成于所述第一金属电路层102上并完全覆盖所述第三钝化层103。\n\n[0051]S10，在一衬底基板101上沉积第一无机绝缘薄膜后形成缓冲层102，之后在所述缓冲层102上沉积半导体层薄膜，所述半导体层薄膜经第一道光刻工艺图案化后分别形成间隔设置的第一有源层1031以及第二有源层1032。\n\n[0052]具体地，所述S10还包括：\n\n[0053]首先，提供一衬底基板101，在所述衬底基板101上沉积第一无机绝缘薄膜后形成缓冲层102；之后，在所述缓冲层102上沉积半导体层薄膜，所述半导体层薄膜经第一道光刻工艺图案化后分别形成间隔设置的第一有源层1031以及第二有源层1032。优选地，所述衬底基板101例如可以为塑料基板或者玻璃基板。在本发明一实施方式中，所述衬底基板101可以是柔性基板，例如聚酰亚胺基板。所述缓冲层102的材料优选为SiOx或SiNx或SiNx/SiOx或SiNOx等，所述半导体层薄膜的材料可以采用氧化物半导体材料，例如，铟锌氧化物(IZO)、镓铟氧化物(IGO)、铟镓锌氧化物(IGZO)、铟镓锡氧化物(IGTO)、铟镓锌锡氧化物(IGZTO)等。所述半导体层薄膜的材料也可以采用例如，非晶硅、单晶硅、低温多晶硅等，如图4A所示。\n\n[0054]S20，在所述衬底基板101上方沉积第二无机绝缘薄膜，所述第二无机绝缘薄膜经刻蚀工艺后分别形成设置于所述第一有源层1031上的第一栅极绝缘层1041、设置于所述第二有源层1032上的第二栅极绝缘层1042以及设置于所述缓冲层102上的第三栅极绝缘层1043，之后在所述衬底基板101上沉积第一金属薄膜，所述第一金属薄膜经第二道光刻工艺图案化后分别形成第一栅极1051、第二栅极1052以及设置于所述第三栅极绝缘层1043上的第一金属层1053。\n\n[0055]具体地，所述S20还包括：\n\n[0056]首先，在所述衬底基板101上方沉积第二无机绝缘薄膜，所述第二无机绝缘薄膜经刻蚀工艺后自对准图案化后分别形成设置于所述第一有源层1031上的第一栅极绝缘层1041、设置于所述第二有源层1032上的第二栅极绝缘层1042以及设置于所述缓冲层102上的第三栅极绝缘层1043；优选地，所述第二无机绝缘薄膜的膜层材料可为SiOx、SiNx、Al2O3/SiNx/SiOx以及SiOx/SiNx/SiOx中的任意一种。之后，在所述衬底基板101上沉积第一金属薄膜，所述第一金属薄膜经第二道光刻工艺图案化后分别形成第一栅极1051、第二栅极1052以及设置于所述第三栅极绝缘层1043上的第一金属层1053；优选地，所述第一金属薄膜的膜层材料可为Mo或Mo/Al或Mo/Cu或Mo/Cu/IZO或IZO/Cu/IZO或Mo/Cu/ITO或Ni/Cu/Ni或MoTiNi/Cu/MoTiNi或NiCr/Cu/NiCr或CuNb中的任意一种。最后，分别对所述第一有源层1031以及所述第二有源层1032的源漏极区域进行金属化处理，如图4B所示。\n\n[0057]S30，在所述衬底基板101上方沉积第三无机绝缘薄膜，所述第三无机绝缘薄膜经第三道光刻工艺图案化后分别形成第一层间绝缘层1061、第二层间绝缘层1062、设置于所述第一金属层1053上的第三层间绝缘层1063以及设置于所述缓冲层102上的第四层间绝缘层1064。\n\n[0058]具体地，所述S30还包括：\n\n[0059]首先，在所述衬底基板101上方沉积第三无机绝缘薄膜，所述第三无机绝缘薄膜经第三道光刻工艺图案化后分别形成第一层间绝缘层1061、第二层间绝缘层1062、设置于所述第一金属层1053上的第三层间绝缘层1063以及设置于所述缓冲层102上的第四层间绝缘层1064。其中，所述第一层间绝缘层1061完全覆盖所述第一栅极绝缘层1041以及第一栅极1051，所述第二层间绝缘层1062完全覆盖所述第二栅极绝缘层1042以及第二栅极1052。所述第三无机绝缘薄膜的膜层材料可以优选为SiOx或SiNx或SiNx/SiOx或SiNOx中的任意一种，如图4C所示。\n\n[0060]S40，在所述衬底基板101上方镀一层所述第一金属薄膜，以第四道光刻工艺将所述第一金属薄膜图案化后形成第一漏级1071、第一源级1072、第二金属层1073、第二漏级1074、遮光层1075、第二源级1076以及第三金属层1077，所述遮光层1075完全覆盖所述第二栅极1052，且所述遮光层1075的第一端延伸至所述第二漏极1074所在的区域。\n\n[0061]具体地，所述S40还包括：\n\n[0062]在所述衬底基板101上方镀一层所述第一金属薄膜，以第四道光刻工艺将所述第一金属薄膜图案化后形成第一漏级1071、第一源级1072、第二金属层1073、第二漏级1074、遮光层1075、第二源级1076以及第三金属层1077。所述第一漏级1071以及所述第一源级1072分别与所述第一有源层1031电连接，所述第二漏级1074以及所述第二源级1076分别与所述第二有源层1032电连接；所述遮光层1075完全覆盖所述第二栅极1052，且所述遮光层1075的第一端延伸至所述第二漏极1074所在的区域。所述遮光层1075的边缘两端至所述第二栅极的边缘两端之间在水平方向上的距离分别为0-5um。在一优选实施例中，所述遮光层1075还具有与所述第一端相对的第二端，所述第二端与所述第二源级1076电连接。在另一优选实施例中，所述遮光层1075为电悬挂状态，所述遮光层1075的所述第一端未电连接所述第二漏极1074，与所述第一端相对的第二端未电连接所述第二源级1076，如图4D所示。\n\n[0063]S50，在所述衬底基板101上方沉积第四无机绝缘薄膜，所述第四无机绝缘薄膜经第五道光刻工艺图案化后形成钝化层108，所述钝化层108完全覆盖所述第一漏级1071、所述第一源级1072、所述第二金属层1073、所述第二漏级1074、所述遮光层1075以及部分所述第二源级1076。\n\n[0064]具体地，所述S50还包括：\n\n[0065]首先，在所述衬底基板101正面沉积第四层无机绝缘薄膜，所述无机绝缘薄膜经光罩工艺后图案化为钝化层108，所述钝化层108完全覆盖所述第一漏级1071、所述第一源级1072、所述第二金属层1073、所述第二漏级1074、所述遮光层1075以及部分所述第二源级1076，所述钝化层108的膜层材料优选为SiOx，SiNx以及SiNOx中的任意一种，如图4E所示。\n\n[0066]S60，在所述第三金属层1077以及部分所述第二源级1076上镀一层第二金属薄膜，所述第二金属薄膜经第六道光刻工艺图案化后形成间隔设置的公共电极1077以及像素电极1076。\n\n[0067]具体地，所述S60还包括：\n\n[0068]在所述第三金属层1077以及部分所述第二源级1076上镀一层第二金属薄膜，所述第二金属薄膜经第六道光刻工艺图案化后形成间隔设置的公共电极1077以及像素电极1076。优选地，所述第二金属薄膜选自Mo金属层、Mo/Al/Mo金属层、Mo/Cu金属层、Mo/Cu/IZO金属层、IZO/Cu/IZO金属层、Mo/Cu/ITO金属层、Ni/Cu/Ni金属层、MoTiNi/Cu/MoTiNi金属层、NiCr/Cu/NiCr金属层以及CuNb金属层中的任意一种，如图4F所示。\n\n[0069]S70，在所述衬底基板101上制备发光单元109，最后得到所述显示基板。\n\n[0070]具体地，所述S70还包括：\n\n[0071]首先，在所述衬底基板101上制备发光单元109，所述发光单元109包括Micro-LED发光层或者OLED发光单元。在本发明一实施例中，所述发光单元109优选为Micro-LED发光层，所述Micro-LED发光单元包括Micro-LED半导体层1091、连接电极1092、第一电极1093以及第二电极1094，所述第一电极1093通过焊接层1095与所述显示基板上的像素电极1076电连接，所述第二电极1094通过另一所述焊接层1095与所述显示基板上的公共电极1077电连接，如图4G所示。\n\n[0072]本发明提出一种带有顶部遮光层的显示基板，包括至少一种带有顶部遮光层的薄膜晶体管以及多个无顶部遮光层的薄膜晶体管。其中，此遮光层与源漏极金属电极遮光层为同一层。遮光层覆盖过栅极，到达薄膜晶体管金属化半导体区域漏极附近。此遮光层不但能够给薄膜晶体管带来顶部遮光作用，还能稳定薄膜晶体管输出特性，主要应用于顶部出光的自发光类显示驱动基板。此带有顶部遮光层的薄膜晶体管的制备制程只需要6道光罩(Mask)，制程流程依序为：氧化物半导体光罩制程、栅极光罩制程、层间绝缘层光罩制程、源漏极金属层光罩制程、钝化层光罩制程以及像素电极光罩制程。\n\n[0073]综上所述，本发明实施例所提供的显示基板及制备方法，将顶栅自对准氧化物半导体薄膜晶体管中的遮光层设置在顶部并完全覆盖对应栅极所在区域，且与源漏极金属层经同一构图工艺图案化而成，此遮光层不但能够给栅自对准氧化物半导体薄膜晶体管带来顶部遮光作用，还能稳定栅自对准氧化物半导体薄膜晶体管的输出特性，同时制备包含此遮光层的顶栅自对准氧化物半导体薄膜晶体管只需6道光刻工艺即可制成，制程比传统的简单且成本较低。\n\n[0074]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0075]以上对本发明实施例所提供的一种显示基板及制备方法进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示基板及制备方法。\n\n背景技术\n\n[0002]目前，有机发光二极体(Organic Light-Emitting Diode，OLED)或者微型发光二极管(Micro Light-Emitting Diode，Micro-LED)作为电流驱动器件，需要较大的电流通过能力、较好的器件稳定性、面内阈值电压(Threshold Voltage，Vth)的均匀性以及低漏电流等特性。研究发现，顶栅自对准氧化物半导体薄膜晶体管(Top Gate IGZO Thin FilmTransistor)具有较高的迁移率，较小寄生电容和低漏电流，比较适合作为电流驱动显示电路。对于底发射类显示基板而言，驱动薄膜晶体管(TFT)底部最好带有光阻挡层，可以阻挡环境光对TFT的特性影响，以及金属类的遮光层连接到源极之后对TFT的输出特性曲线有稳定作用。\n\n[0003]然而，带有遮光层的顶栅自对准氧化物半导体薄膜晶体管(Top Gate IGZO ThinFilm Transistor)最少需要8道掩膜版(Mask)。由于掩膜版(Mask)造价昂贵，采用多次构图工艺制备显示基板，工艺复杂，且开发费用较高。同时，随着显示器的发展，越来越多的顶部出光的自发光类显示成为主流，对于TFT的遮光也有新的要求。\n\n[0004]综上所述，因此需提供一种显示基板及制备方法，以解决上述技术问题。\n\n发明内容\n\n[0005]本发明提供一种显示基板及制备方法，以解决现有的显示基板及制备方法，由于带有遮光层的顶栅自对准氧化物半导体薄膜晶体管最少需要8道掩膜版，导致工艺复杂且开发费用较高的技术问题。\n\n[0006]为达到上述目的，本发明实施例采用如下技术方案：\n\n[0007]本发明实施例提供一种显示基板，所述显示基板至少包括：衬底基板以及分别形成于所述衬底基板上的第一薄膜晶体管、存储电容、第二薄膜晶体管和发光单元，且所述第一薄膜晶体管为无遮光层的薄膜晶体管，所述第二薄膜晶体管为具有顶部遮光层的薄膜晶体管；所述第二薄膜晶体管还包括设置于所述衬底基板上的缓冲层、设置于所述缓冲层上的第二有源层、设置于所述第二有源层上的第二栅极绝缘层、设置于所述第二栅极绝缘层上的第二栅极、设置于所述第二有源层上并完全覆盖所述第二栅极绝缘层以及所述第二栅极的第二层间绝缘层、设置于所述第二层间绝缘层边缘两端的第二漏极和第二源级、设置于所述第二层间绝缘层上的遮光层以及完全覆盖所述第二漏极、所述第二源级和所述遮光层的钝化层；\n\n[0008]其中，所述第二漏极、所述第二源级和所述遮光层均通过第一金属薄膜经图案化后形成，所述遮光层完全覆盖所述第二栅极所在的区域，且所述遮光层的第一端延伸至所述第二漏极所在的区域。\n\n[0009]在一些实施例中，所述遮光层的边缘两端至所述第二栅极的边缘两端之间在水平方向上的距离分别为0-5um。\n\n[0010]在一些实施例中，所述遮光层还具有与所述第一端相对的第二端，所述第二端与所述第二源级电连接。\n\n[0011]在一些实施例中，所述遮光层为电悬挂状态，所述遮光层的所述第一端未电连接所述第二漏极，与所述第一端相对的第二端未电连接所述第二源级。\n\n[0012]在一些实施例中，所述第一薄膜晶体管还包括所述缓冲层、设置于所述缓冲层上并与所述第二有源层间隔设置的第一有源层、设置于所述第一有源层上的第一栅极绝缘层、设置于所述第一栅极绝缘层上的第一栅极、设置于所述第一有源层上并完全覆盖所述第一栅极绝缘层以及所述第一栅极的第一层间绝缘层、设置于所述第一层间绝缘层边缘两端的第一漏极与第一源级以及所述钝化层。\n\n[0013]在一些实施例中，所述存储电容还包括所述缓冲层、设置于所述缓冲层上的第三栅极绝缘层、设置于所述第三栅极绝缘层上的第一金属层、设置于所述第一金属层上的第三层间绝缘层、设置于所述第三层间绝缘层上的第二金属层以及所述钝化层。\n\n[0014]在一些实施例中，所述发光单元包括微型发光二极管发光层或者有机发光二极管发光单元。\n\n[0015]在一些实施例中，所述Micro-LED发光单元包括Micro-LED半导体层、连接电极、第一电极以及第二电极，所述第一电极通过焊接层与所述显示基板上的像素电极电连接，所述第二电极通过另一所述焊接层与所述显示基板上的公共电极电连接。\n\n[0016]本发明实施例还提供一种如上所述显示基板的制备方法，其特征在于，所述方法包括：\n\n[0017]S10，在一衬底基板上沉积第一无机绝缘薄膜后形成缓冲层，之后在所述缓冲层上沉积半导体层薄膜，所述半导体层薄膜经第一道光刻工艺图案化后分别形成间隔设置的第一有源层以及第二有源层；\n\n[0018]S20，在所述衬底基板上方沉积第二无机绝缘薄膜，所述第二无机绝缘薄膜经刻蚀工艺后分别形成设置于所述第一有源层上的第一栅极绝缘层、设置于所述第二有源层上的第二栅极绝缘层以及设置于所述缓冲层上的第三栅极绝缘层，之后在所述衬底基板上沉积第一金属薄膜，所述第一金属薄膜经第二道光刻工艺图案化后分别形成第一栅极、第二栅极以及设置于所述第三栅极绝缘层上的第一金属层；\n\n[0019]S30，在所述衬底基板上方沉积第三无机绝缘薄膜，所述第三无机绝缘薄膜经第三道光刻工艺图案化后分别形成第一层间绝缘层、第二层间绝缘层、设置于所述第一金属层上的第三层间绝缘层以及设置于所述缓冲层上的第四层间绝缘层；\n\n[0020]S40，在所述衬底基板上方镀一层所述第一金属薄膜，以第四道光刻工艺将所述第一金属薄膜图案化后形成第一漏级、第一源级、第二金属层、第二漏级、遮光层、第二源级以及第三金属层，所述遮光层完全覆盖所述第二栅极，且所述遮光层的第一端延伸至所述第二漏极所在的区域；\n\n[0021]S50，在所述衬底基板上方沉积第四无机绝缘薄膜，所述第四无机绝缘薄膜经第五道光刻工艺图案化后形成钝化层，所述钝化层完全覆盖所述第一漏级、所述第一源级、所述第二金属层、所述第二漏级、所述遮光层以及部分所述第二源级；\n\n[0022]S60，在所述第三金属层以及部分所述第二源级上镀一层第二金属薄膜，所述第二金属薄膜经第六道光刻工艺图案化后形成间隔设置的公共电极以及像素电极；\n\n[0023]S70，在所述衬底基板上制备发光单元，最后得到所述显示基板。\n\n[0024]在一些实施例中，所述第一金属薄膜以及所述第二金属薄膜为选自Mo金属层、Mo/Al/Mo金属层、Mo/Cu金属层、Mo/Cu/IZO金属层、IZO/Cu/IZO金属层、Mo/Cu/ITO金属层、Ni/Cu/Ni金属层、MoTiNi/Cu/MoTiNi金属层、NiCr/Cu/NiCr金属层以及CuNb金属层中的任意一种。\n\n[0025]本发明实施例所提供的显示基板及制备方法，将顶栅自对准氧化物半导体薄膜晶体管中的遮光层设置在顶部并完全覆盖对应栅极所在区域，且与源漏极金属层经同一构图工艺图案化而成，此遮光层不但能够给栅自对准氧化物半导体薄膜晶体管带来顶部遮光作用，还能稳定栅自对准氧化物半导体薄膜晶体管的输出特性，同时制备包含此遮光层的顶栅自对准氧化物半导体薄膜晶体管只需6道光刻工艺即可制成，制程比传统的简单且成本较低。\n\n附图说明\n\n[0026]下面结合附图，通过对本发明的具体实施方式进行详细描述。\n\n[0027]图1为本发明实施例提供的显示基板的电路示意图。\n\n[0028]图2A为本发明第一实施例提供的显示基板的结构示意图。\n\n[0029]图2B为本发明第二实施例提供的显示基板的结构示意图。\n\n[0030]图3为本发明实施例提供的显示面板的制备方法的步骤流程图。\n\n[0031]图4A-4G为本发明实施例提供的显示面板的制备方法的结构示意图。\n\n具体实施方式\n\n[0032]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0033]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0034]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0035]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0036]下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0037]本发明实施例针对现有的显示面板及制备方法，由于带有遮光层的顶栅自对准氧化物半导体薄膜晶体管最少需要8道掩膜版。导致制备过程中工艺复杂，且开发费用较高；同时，现有结构的遮光层难以阻挡环境光对TFT的特性影响的技术问题，本实施例能够解决该缺陷。\n\n[0038]如图1所示，为本发明实施例提供的显示基板的3T1C(3transistor1capacitance，3个薄膜晶体管T1、T2、T3，1个存储电容Cst)像素驱动电路，其中，Vdata为数据驱动电压，Vgate为扫描电压，Vdd为恒流驱动电压，Vss为输出电压。薄膜晶体管T1为开关薄膜晶体管，且为无遮光层的薄膜晶体管；薄膜晶体管T2为驱动薄膜晶体管，且为具有顶部遮光层的薄膜晶体管，薄膜晶体管T3为感应薄膜晶体管，且为无遮光层的薄膜晶体管。\n\n[0039]如图2A所示，为本发明第一实施例提供的显示基板的结构示意图。所述显示基板至少包括：衬底基板101以及分别形成于所述衬底基板101上的第一薄膜晶体管T1、存储电容Cst、第二薄膜晶体管T2和发光单元109，且所述第一薄膜晶体管为T1无遮光层的薄膜晶体管，所述第二薄膜晶体管T2为具有顶部遮光层的薄膜晶体管。\n\n[0040]具体地，所述第二薄膜晶体管T2还包括设置于所述衬底基板101上的缓冲层102、设置于所述缓冲层102上的第二有源层1032、设置于所述第二有源层1032上的第二栅极绝缘层1042、设置于所述第二栅极绝缘层1042上的第二栅极1052、设置于所述第二有源层1032上并完全覆盖所述第二栅极绝缘层1042以及所述第二栅极1052的第二层间绝缘层1062、设置于所述第二层间绝缘层1062边缘两端的第二漏极1074和第二源级1076、设置于所述第二层间绝缘层1062上的遮光层1075以及完全覆盖所述第二漏极1074、所述第二源级1076和所述遮光层1075的钝化层108；\n\n[0041]其中，所述第二漏极1074、所述第二源级1076和所述遮光层1075均通过第一金属薄膜经图案化后形成，所述遮光层1075完全覆盖所述第二栅极1074所在的区域，且所述遮光层1075的第一端延伸至所述第二漏极1074所在的区域。\n\n[0042]具体地，所述遮光层1075的边缘两端至所述第二栅极1074的边缘两端之间在水平方向上的距离分别为0-5um。\n\n[0043]在本发明第一实施例中，所述遮光层1075还具有与所述第一端相对的第二端，所述第二端与所述第二源级1076电连接。\n\n[0044]具体地，所述第一薄膜晶体管T1还包括所述缓冲层102、设置于所述缓冲层102上并与所述第二有源层1032间隔设置的第一有源层1031、设置于所述第一有源层1031上的第一栅极绝缘层1041、设置于所述第一栅极绝缘层1041上的第一栅极1051、设置于所述第一有源层1031上并完全覆盖所述第一栅极绝缘层1041以及所述第一栅极1051的第一层间绝缘层1061、设置于所述第一层间绝缘层1061边缘两端的第一漏极1071与第一源级1072以及所述钝化层108。\n\n[0045]具体地，所述存储电容Cst还包括所述缓冲层102、设置于所述缓冲层102上的第三栅极绝缘层1043、设置于所述第三栅极绝缘层1043上的第一金属层1053、设置于所述第一金属层1053上的第三层间绝缘层1063、设置于所述第三层间绝缘层1063上的第二金属层1073以及所述钝化层108。\n\n[0046]具体地，所述发光单元109包括Micro-LED发光层或者OLED发光单元。在本发明第一实施例中，所述发光单元109优选为Micro-LED发光层，所述Micro-LED发光单元包括Micro-LED半导体层1091、连接电极1092、第一电极1093以及第二电极1094，所述第一电极1093通过焊接层1095与所述显示基板上的像素电极1076电连接，所述第二电极1094通过另一所述焊接层1095与所述显示基板上的公共电极1077电连接。\n\n[0047]具体地，所述缓冲层102上的边缘两端还设置有第四层间绝缘层1064，所述第四层间绝缘层1064分别与部分所述第一有源层1031以及部分所述第二有源层1032相连。\n\n[0048]如图2B所示，为本发明第二实施例提供的显示基板的结构示意图。本发明第二实施例提供的显示基板与本发明第一实施例提供的显示基板的不同之处仅在于，所述遮光层1075为电悬挂状态，所述遮光层1075的所述第一端未电连接所述第二漏极1074，与所述第一端相对的第二端未电连接所述第二源级1076。\n\n[0049]如图3所示，本发明实施例还提供一种如上所述显示基板的制备方法，所述方法具体包括：\n\n[0050]S10，在一衬底基板101上依次制备第一金属电路层102、第三钝化层103以及硬保护层201，所述第一金属电路层101由第一金属薄膜经图案化形成，所述第三钝化层103形成于所述衬底基板101上并部分覆盖所述第一金属电路层102，所述硬保护层201形成于所述第一金属电路层102上并完全覆盖所述第三钝化层103。\n\n[0051]S10，在一衬底基板101上沉积第一无机绝缘薄膜后形成缓冲层102，之后在所述缓冲层102上沉积半导体层薄膜，所述半导体层薄膜经第一道光刻工艺图案化后分别形成间隔设置的第一有源层1031以及第二有源层1032。\n\n[0052]具体地，所述S10还包括：\n\n[0053]首先，提供一衬底基板101，在所述衬底基板101上沉积第一无机绝缘薄膜后形成缓冲层102；之后，在所述缓冲层102上沉积半导体层薄膜，所述半导体层薄膜经第一道光刻工艺图案化后分别形成间隔设置的第一有源层1031以及第二有源层1032。优选地，所述衬底基板101例如可以为塑料基板或者玻璃基板。在本发明一实施方式中，所述衬底基板101可以是柔性基板，例如聚酰亚胺基板。所述缓冲层102的材料优选为SiOx或SiNx或SiNx/SiOx或SiNOx等，所述半导体层薄膜的材料可以采用氧化物半导体材料，例如，铟锌氧化物(IZO)、镓铟氧化物(IGO)、铟镓锌氧化物(IGZO)、铟镓锡氧化物(IGTO)、铟镓锌锡氧化物(IGZTO)等。所述半导体层薄膜的材料也可以采用例如，非晶硅、单晶硅、低温多晶硅等，如图4A所示。\n\n[0054]S20，在所述衬底基板101上方沉积第二无机绝缘薄膜，所述第二无机绝缘薄膜经刻蚀工艺后分别形成设置于所述第一有源层1031上的第一栅极绝缘层1041、设置于所述第二有源层1032上的第二栅极绝缘层1042以及设置于所述缓冲层102上的第三栅极绝缘层1043，之后在所述衬底基板101上沉积第一金属薄膜，所述第一金属薄膜经第二道光刻工艺图案化后分别形成第一栅极1051、第二栅极1052以及设置于所述第三栅极绝缘层1043上的第一金属层1053。\n\n[0055]具体地，所述S20还包括：\n\n[0056]首先，在所述衬底基板101上方沉积第二无机绝缘薄膜，所述第二无机绝缘薄膜经刻蚀工艺后自对准图案化后分别形成设置于所述第一有源层1031上的第一栅极绝缘层1041、设置于所述第二有源层1032上的第二栅极绝缘层1042以及设置于所述缓冲层102上的第三栅极绝缘层1043；优选地，所述第二无机绝缘薄膜的膜层材料可为SiOx、SiNx、Al2O3/SiNx/SiOx以及SiOx/SiNx/SiOx中的任意一种。之后，在所述衬底基板101上沉积第一金属薄膜，所述第一金属薄膜经第二道光刻工艺图案化后分别形成第一栅极1051、第二栅极1052以及设置于所述第三栅极绝缘层1043上的第一金属层1053；优选地，所述第一金属薄膜的膜层材料可为Mo或Mo/Al或Mo/Cu或Mo/Cu/IZO或IZO/Cu/IZO或Mo/Cu/ITO或Ni/Cu/Ni或MoTiNi/Cu/MoTiNi或NiCr/Cu/NiCr或CuNb中的任意一种。最后，分别对所述第一有源层1031以及所述第二有源层1032的源漏极区域进行金属化处理，如图4B所示。\n\n[0057]S30，在所述衬底基板101上方沉积第三无机绝缘薄膜，所述第三无机绝缘薄膜经第三道光刻工艺图案化后分别形成第一层间绝缘层1061、第二层间绝缘层1062、设置于所述第一金属层1053上的第三层间绝缘层1063以及设置于所述缓冲层102上的第四层间绝缘层1064。\n\n[0058]具体地，所述S30还包括：\n\n[0059]首先，在所述衬底基板101上方沉积第三无机绝缘薄膜，所述第三无机绝缘薄膜经第三道光刻工艺图案化后分别形成第一层间绝缘层1061、第二层间绝缘层1062、设置于所述第一金属层1053上的第三层间绝缘层1063以及设置于所述缓冲层102上的第四层间绝缘层1064。其中，所述第一层间绝缘层1061完全覆盖所述第一栅极绝缘层1041以及第一栅极1051，所述第二层间绝缘层1062完全覆盖所述第二栅极绝缘层1042以及第二栅极1052。所述第三无机绝缘薄膜的膜层材料可以优选为SiOx或SiNx或SiNx/SiOx或SiNOx中的任意一种，如图4C所示。\n\n[0060]S40，在所述衬底基板101上方镀一层所述第一金属薄膜，以第四道光刻工艺将所述第一金属薄膜图案化后形成第一漏级1071、第一源级1072、第二金属层1073、第二漏级1074、遮光层1075、第二源级1076以及第三金属层1077，所述遮光层1075完全覆盖所述第二栅极1052，且所述遮光层1075的第一端延伸至所述第二漏极1074所在的区域。\n\n[0061]具体地，所述S40还包括：\n\n[0062]在所述衬底基板101上方镀一层所述第一金属薄膜，以第四道光刻工艺将所述第一金属薄膜图案化后形成第一漏级1071、第一源级1072、第二金属层1073、第二漏级1074、遮光层1075、第二源级1076以及第三金属层1077。所述第一漏级1071以及所述第一源级1072分别与所述第一有源层1031电连接，所述第二漏级1074以及所述第二源级1076分别与所述第二有源层1032电连接；所述遮光层1075完全覆盖所述第二栅极1052，且所述遮光层1075的第一端延伸至所述第二漏极1074所在的区域。所述遮光层1075的边缘两端至所述第二栅极的边缘两端之间在水平方向上的距离分别为0-5um。在一优选实施例中，所述遮光层1075还具有与所述第一端相对的第二端，所述第二端与所述第二源级1076电连接。在另一优选实施例中，所述遮光层1075为电悬挂状态，所述遮光层1075的所述第一端未电连接所述第二漏极1074，与所述第一端相对的第二端未电连接所述第二源级1076，如图4D所示。\n\n[0063]S50，在所述衬底基板101上方沉积第四无机绝缘薄膜，所述第四无机绝缘薄膜经第五道光刻工艺图案化后形成钝化层108，所述钝化层108完全覆盖所述第一漏级1071、所述第一源级1072、所述第二金属层1073、所述第二漏级1074、所述遮光层1075以及部分所述第二源级1076。\n\n[0064]具体地，所述S50还包括：\n\n[0065]首先，在所述衬底基板101正面沉积第四层无机绝缘薄膜，所述无机绝缘薄膜经光罩工艺后图案化为钝化层108，所述钝化层108完全覆盖所述第一漏级1071、所述第一源级1072、所述第二金属层1073、所述第二漏级1074、所述遮光层1075以及部分所述第二源级1076，所述钝化层108的膜层材料优选为SiOx，SiNx以及SiNOx中的任意一种，如图4E所示。\n\n[0066]S60，在所述第三金属层1077以及部分所述第二源级1076上镀一层第二金属薄膜，所述第二金属薄膜经第六道光刻工艺图案化后形成间隔设置的公共电极1077以及像素电极1076。\n\n[0067]具体地，所述S60还包括：\n\n[0068]在所述第三金属层1077以及部分所述第二源级1076上镀一层第二金属薄膜，所述第二金属薄膜经第六道光刻工艺图案化后形成间隔设置的公共电极1077以及像素电极1076。优选地，所述第二金属薄膜选自Mo金属层、Mo/Al/Mo金属层、Mo/Cu金属层、Mo/Cu/IZO金属层、IZO/Cu/IZO金属层、Mo/Cu/ITO金属层、Ni/Cu/Ni金属层、MoTiNi/Cu/MoTiNi金属层、NiCr/Cu/NiCr金属层以及CuNb金属层中的任意一种，如图4F所示。\n\n[0069]S70，在所述衬底基板101上制备发光单元109，最后得到所述显示基板。\n\n[0070]具体地，所述S70还包括：\n\n[0071]首先，在所述衬底基板101上制备发光单元109，所述发光单元109包括Micro-LED发光层或者OLED发光单元。在本发明一实施例中，所述发光单元109优选为Micro-LED发光层，所述Micro-LED发光单元包括Micro-LED半导体层1091、连接电极1092、第一电极1093以及第二电极1094，所述第一电极1093通过焊接层1095与所述显示基板上的像素电极1076电连接，所述第二电极1094通过另一所述焊接层1095与所述显示基板上的公共电极1077电连接，如图4G所示。\n\n[0072]本发明提出一种带有顶部遮光层的显示基板，包括至少一种带有顶部遮光层的薄膜晶体管以及多个无顶部遮光层的薄膜晶体管。其中，此遮光层与源漏极金属电极遮光层为同一层。遮光层覆盖过栅极，到达薄膜晶体管金属化半导体区域漏极附近。此遮光层不但能够给薄膜晶体管带来顶部遮光作用，还能稳定薄膜晶体管输出特性，主要应用于顶部出光的自发光类显示驱动基板。此带有顶部遮光层的薄膜晶体管的制备制程只需要6道光罩(Mask)，制程流程依序为：氧化物半导体光罩制程、栅极光罩制程、层间绝缘层光罩制程、源漏极金属层光罩制程、钝化层光罩制程以及像素电极光罩制程。\n\n[0073]综上所述，本发明实施例所提供的显示基板及制备方法，将顶栅自对准氧化物半导体薄膜晶体管中的遮光层设置在顶部并完全覆盖对应栅极所在区域，且与源漏极金属层经同一构图工艺图案化而成，此遮光层不但能够给栅自对准氧化物半导体薄膜晶体管带来顶部遮光作用，还能稳定栅自对准氧化物半导体薄膜晶体管的输出特性，同时制备包含此遮光层的顶栅自对准氧化物半导体薄膜晶体管只需6道光刻工艺即可制成，制程比传统的简单且成本较低。\n\n[0074]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0075]以上对本发明实施例所提供的一种显示基板及制备方法进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10877, 23931, '技术领域\n\n[0001]本申请涉及显示技术领域，特别是涉及一种显示驱动基板、显示驱动基板的制作方法以及显示面板。\n\n背景技术\n\n[0002]作为新兴显示技术，自发光显示技术相较于传统LCD(Liquid Crystal Display、液晶显示)显示技术具备较多的优势，如较低的功耗，较高的色域，较快的相应速率等，因而被视为较有发展前景的一种显示技术。\n\n[0003]自发光显示技术中OLED(OrganicLight-Emitting Diode，有机发光半导体)/Micro LED(Micro Light Emitting Diode，微型发光二极管)作为电流驱动，需要较大的电流通过能力、较好的器件稳定性、较好的面内电压均匀性、较低的漏电流，一般情况，采用具有较高的迁移率、较小寄生电容和低漏电流的顶栅自对准氧化物半导体薄膜晶体管作为电流驱动器件，但是，在实现过程中，发明人发现传统技术中至少存在如下问题：传统采用顶栅自对准氧化物半导体薄膜晶体管的显示面板结构复杂，制作成本高。\n\n发明内容\n\n[0004]基于此，有必要针对传统采用顶栅自对准氧化物半导体薄膜晶体管的显示面板结构复杂，制作成本高的问题，提供一种显示驱动基板、显示驱动基板的制作方法以及显示面板。\n\n[0005]为了实现上述目的，一方面，本申请实施例提供了一种显示驱动基板，包括N个驱动单元；\n\n[0006]驱动单元包括开关TFT(Thin Film Transistor，薄膜晶体管)区、驱动TFT区、电容区以及LED(Light Emitting Diode，发光二极管)键合区；\n\n[0007]在开关TFT区内，数据金属层和源极金属层设置在玻璃基板上，层间绝缘层隔开数据金属层和源极金属层，第一半导体层设置在层间绝缘层上并连接数据金属层和源极金属层，第一栅极绝缘层和第一栅极金属层依次层叠设置在第一半导体层上；\n\n[0008]在驱动TFT区内，电压源金属层和第一避光层设置在玻璃基板上，层间绝缘层隔开电压源金属层和第一避光层，第二半导体层设置在层间绝缘层上并连接电压源金属层和第一避光层，第二栅极绝缘层和第二栅极金属层的一端依次层叠设置在第二半导体层上；第二栅极金属层的另一端延伸设置在第一半导体层上；\n\n[0009]在电容区内，第二避光层、第三栅极绝缘层和第三栅极金属层依次层叠设置在玻璃基板上；\n\n[0010]LED键合区内，接地金属层和电源电极金属层依次层叠设置在玻璃基板上；电源电极金属层用于键合Micro LED。\n\n[0011]在其中一个实施例中，还包括钝化层；钝化层设置在玻璃基板上，且包覆数据金属层、源极金属层、层间绝缘层隔、第一半导体层、第一栅极绝缘层、第一栅极金属层、电压源金属层、第一避光层、第二半导体层、第二栅极绝缘层、第二栅极金属层、第二避光层、第三栅极绝缘层和第三栅极金属层。\n\n[0012]在其中一个实施例中，数据金属层、源极金属层、电压源金属层、第一避光层、第二避光层和接地金属层的材料为以下材料中的任意一种：Mo、Al/Mo、Mo/Al/Mo、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr和CuN。\n\n[0013]在其中一个实施例中，层间绝缘层的材料为以下材料中的任意一种：SiOx、SiNx、SiNx/SiOx和SiNOx。\n\n[0014]在其中一个实施例中，第一半导体层和第二半导体层的材料为以下材料中的任意一种：IGZO、IGTO、IGZO、IGO和IZO。\n\n[0015]在其中一个实施例中，第一栅极绝缘层、第二栅极绝缘层和第三栅极绝缘层的材料为以下材料中的任意一种：SiOx、SiNx、Al2O3/SiNx/SiOx和SiOx/SiNx/SiOx。\n\n[0016]在其中一个实施例中，第一栅极金属层、第二栅极金属层和第三栅极金属层的材料为以下材料中的任意一种：Mo、Mo/Al、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr和CuNb。\n\n[0017]在其中一个实施例中，电源电极金属层的材料为以下材料中的任意一种：Mo、Mo/Al、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr和CuNb。\n\n[0018]另一方面，本申请实施例提供了一种显示驱动基板的制作方法，包括以下步骤：\n\n[0019]提供玻璃基板；\n\n[0020]在玻璃基板上形成数据金属层、源极金属层、电压源金属层、第一避光层、第二避光层和接地金属层；\n\n[0021]在玻璃基板上形成层间绝缘层；层间绝缘层将数据金属层、源极金属层、电压源金属层、第一避光层和第二避光层隔开；\n\n[0022]形成第一半导体层和第二半导体层；第一半导体层覆盖在层间绝缘层、数据金属层和源极金属层上；第二半导体层覆盖在层间绝缘层、电压源金属层和第一避光层上；\n\n[0023]形成第一栅极绝缘层、第二栅极绝缘层和第三栅极绝缘层；第一栅极绝缘层设置在第一半导体层上；第二栅极绝缘层设置在第二半导体层上；第三栅极绝缘层设置在第二避光层上；\n\n[0024]形成第一栅极金属层、第二栅极金属层和第三栅极金属层；第一栅极金属层设置在第一栅极绝缘层上；第二栅极金属层设置在第二栅极绝缘层上；第三栅极金属层设置在第三栅极绝缘层上；\n\n[0025]形成钝化层，钝化层包覆数据金属层、源极金属层、层间绝缘层隔、第一半导体层、第一栅极绝缘层、第一栅极金属层、电压源金属层、第一避光层、第二半导体层、第二栅极绝缘层、第二栅极金属层、第二避光层、第三栅极绝缘层和第三栅极金属层；\n\n[0026]在接地金属层上形成电源电极金属层。\n\n[0027]另一方面，本申请实施例提供了一种显示面板，包括上述显示驱动基板。\n\n[0028]上述技术方案中的一个技术方案具有如下优点和有益效果：\n\n[0029]本申请各实施例提供的显示驱动基板，包括N个驱动单元；各驱动单元包括开关TFT区、驱动TFT区、电容区以及LED键合区；其中，开关TFT区内的数据金属层和源极金属层设置在玻璃基板上，并通过第一半导体层连接；驱动TFT区内的电压源金属层和第一避光层设置在玻璃基板上，并通过第二半导体层连接，第二栅极金属层的另一端延伸设置在第一半导体层上；电容区内的第二避光层、第三栅极绝缘层和第三栅极金属层依次层叠设置在玻璃基板上，形成电容；LED键合区内的接地金属层和电源电极金属层依次层叠设置在玻璃基板上，电源电极金属层用于键合Micro LED；本申请显示驱动基板中的数据金属层、源极金属层、电压源金属层、第一避光层、第二避光层和接地金属层可采用同一道金属工艺制程，简化了显示驱动基板的工艺流程，另外，利用第一半导体层连接数据金属层和源极金属层，利用第二半导体层连接电压源金属层和第一避光层，使得相对于传统结构可缩小像素内开孔的尺寸，进一步的，通过第二避光层、第三栅极绝缘层和第三栅极金属形成电容，替代了传统结构中的电容结构，减少了电容占比，有利于提高像素密度。\n\n附图说明\n\n[0030]图1为一个实施例中显示驱动基板的结构示意图；\n\n[0031]图2为另一个实施例中显示驱动基板的结构示意图。\n\n具体实施方式\n\n[0032]为了便于理解本申请，下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的首选实施例。但是，本申请可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本申请的公开内容更加透彻全面。\n\n[0033]需要说明的是，当一个元件被认为是“连接”另一个元件，它可以是直接连接到另一个元件并与之结合为一体，或者可能同时存在居中元件。本文所使用的术语“设置”、“一端”、“另一端”以及类似的表述只是为了说明的目的。\n\n[0034]除非另有定义，本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本申请。本文所使用的术语“及/或”包括一个或多个相关的所列项目的任意的和所有的组合。\n\n[0035]为了传统采用顶栅自对准氧化物半导体薄膜晶体管的显示面板结构复杂，制作成本高的问题，在一个实施例中，如图1所示，提供了一种显示驱动基板，包括N个驱动单元；\n\n[0036]驱动单元包括开关TFT区11、驱动TFT区13、电容区15以及LED键合区17；\n\n[0037]在开关TFT区11内，数据金属层111和源极金属层113设置在玻璃基板19上，层间绝缘层21隔开数据金属层111和源极金属层113，第一半导体层115设置在层间绝缘层21上并连接数据金属层111和源极金属层113，第一栅极绝缘层117和第一栅极金属层119依次层叠设置在第一半导体层115上；\n\n[0038]在驱动TFT区13内，电压源金属层131和第一避光层133设置在玻璃基板19上，层间绝缘层21隔开电压源金属层131和第一避光层133，第二半导体层135设置在层间绝缘层21上并连接电压源金属层131和第一避光层133，第二栅极绝缘层137和第二栅极金属层139的一端依次层叠设置在第二半导体层135上；第二栅极金属层139的另一端延伸设置在第一半导体层115上；\n\n[0039]在电容区15内，第二避光层151、第三栅极绝缘层153和第三栅极金属层155依次层叠设置在玻璃基板19上；\n\n[0040]在LED键合区17内，接地金属层171和电源电极金属层173依次层叠设置在玻璃基板19上；电源电极金属层173用于键合Micro LED。\n\n[0041]需要说明的是，在显示驱动基板的制作工艺流程中，在开关TFT区内形成开关TFT，在驱动TFT区内形成驱动TFT，在电容区内形成电容，在LED键合区内键合LED。\n\n[0042]在开关TFT区内包括数据金属层、源极金属层、第一半导体层、第一栅极绝缘层和第一栅极金属层，其中，数据金属层和源极金属层设置在玻璃基板上，并通过层间绝缘层隔开，第一半导体层形成在数据金属层、源极金属层和层间绝缘层隔上，连接数据金属层和源极金属层，第一栅极绝缘层和第一栅极金属层依次层叠设置在第一半导体层上。\n\n[0043]在一个示例中，数据金属层的材料为以下材料中的任意一种：Mo(钼)、Al(铝)/Mo、Mo/Al/Mo、Mo/Cu(铜)、Mo/Cu/IZO(氧化铟锌)、IZO/Cu/IZO、Mo/Cu/ITO(氧化铟锡)、Ni(镍)/Cu/Ni、MoTi(钛)Ni/Cu/MoTiNi、NiCr(铬)/Cu/NiCr和CuN(氮)。\n\n[0044]在一个示例中，源极金属层的材料为以下材料中的任意一种：Mo、Al/Mo、Mo/Al/Mo、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr和CuN。\n\n[0045]在一个示例中，层间绝缘层的材料为以下材料中的任意一种：SiOx(氧化硅)、SiNx(氮化硅)、SiNx/SiOx和SiNOx。\n\n[0046]在一个示例中，第一半导体层的材料为以下材料中的任意一种：IGZO(铟镓锌氧化物)、IGTO(铟镓钛氧化物)、IGZO(铟镓锌氧化物)、IGO(铟镓氧化物和IZO(铟锌氧化物)。\n\n[0047]在一个示例中，第一栅极绝缘层的材料为以下材料中的任意一种：SiOx、SiNx、Al2O3/SiNx/SiOx和SiOx/SiNx/SiOx。\n\n[0048]在一个示例中，第一栅极金属层的材料为以下材料中的任意一种：Mo、Mo/Al、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr和CuNb(铌)。\n\n[0049]驱动TFT区包括电压源金属层、第一避光层、第二半导体层、第二栅极绝缘层和第二栅极金属层；电压源金属层和第一避光层设置在玻璃基板上，并通过层间绝缘层隔开，第二半导体层形成在电压源金属层、第一避光层和层间绝缘层上，连接电压源金属层和第一避光层，第二栅极绝缘层设置在第二半导体层上，第二栅极金属层的一端设置在第二半导体层上，另一端设置在第一半导体，即通过第二栅极金属层连通开关TFT和启动TFT。\n\n[0050]在一个示例中，电压源金属层的材料为以下材料中的任意一种：Mo、Al/Mo、Mo/Al/Mo、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr和CuN。\n\n[0051]在一个示例中，第一避光层的材料为以下材料中的任意一种：Mo、Al/Mo、Mo/Al/Mo、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr和CuN。\n\n[0052]在一个示例中，第二半导体层的材料为以下材料中的任意一种：IGZO、IGTO、IGZO、IGO和IZO。\n\n[0053]在一个示例中，第二栅极绝缘层的材料为以下材料中的任意一种：SiOx、SiNx、Al2O3/SiNx/SiOx和SiOx/SiNx/SiOx。\n\n[0054]在一个示例中，第二栅极金属层的材料为以下材料中的任意一种：Mo、Mo/Al、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr和CuNb。\n\n[0055]在电容区内包括第二避光层、第三栅极绝缘层和第三栅极金属层，第二避光层、第三栅极绝缘层和第三栅极金属层形成电路，取代了传统结构中电容Cst ILD。\n\n[0056]在一个示例中，第二避光层的材料为以下材料中的任意一种：Mo、Al/Mo、Mo/Al/Mo、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr和CuN。\n\n[0057]在一个示例中，第三栅极绝缘层的材料为以下材料中的任意一种：SiOx、SiNx、Al2O3/SiNx/SiOx和SiOx/SiNx/SiOx。\n\n[0058]在一个示例中，第三栅极金属层的材料为以下材料中的任意一种：Mo、Mo/Al、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr和CuNb。\n\n[0059]LED键合区内包括接地金属层和电源电极金属层，其中，电源电极金属层用于键合Micro LED。在一个示例中，接地金属层的材料为以下材料中的任意一种：Mo、Al/Mo、Mo/Al/Mo、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr和CuN。在一个示例中，电源电极金属层的材料为以下材料中的任意一种：Mo、Mo/Al、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr和CuNb。\n\n[0060]进一步的，如图2所示，显示驱动基板还包括钝化层23；钝化层23设置在玻璃基板19上，且包覆数据金属层111、源极金属层113、层间绝缘层隔21、第一半导体层115、第一栅极绝缘层117、第一栅极金属层119、电压源金属层131、第一避光层133、第二半导体层135、第二栅极绝缘层137、第二栅极金属层139、第二避光层151、第三栅极绝缘层153和第三栅极金属层155。\n\n[0061]在一个示例中，钝化层的材料为以下材料中任意一种：SiOx、SiNx和SiNOx。\n\n[0062]本申请显示驱动基板提供的各实施例中，包括N个驱动单元；各驱动单元包括开关TFT区、驱动TFT区、电容区以及LED键合区；其中，开关TFT区内的数据金属层和源极金属层设置在玻璃基板上，并通过第一半导体层连接；驱动TFT区内的电压源金属层和第一避光层设置在玻璃基板上，并通过第二半导体层连接，第二栅极金属层的另一端延伸设置在第一半导体层上；电容区内的第二避光层、第三栅极绝缘层和第三栅极金属层依次层叠设置在玻璃基板上，形成电容；LED键合区内的接地金属层和电源电极金属层依次层叠设置在玻璃基板上，电源电极金属层用于键合Micro LED；本申请显示驱动基板中的数据金属层、源极金属层、电压源金属层、第一避光层、第二避光层和接地金属层可采用同一道金属工艺制程，简化了显示驱动基板的工艺流程，另外，利用第一半导体层连接数据金属层和源极金属层，利用第二半导体层连接电压源金属层和第一避光层，使得相对于传统结构可缩小像素内开孔的尺寸，进一步的，通过第二避光层、第三栅极绝缘层和第三栅极金属形成电容，替代了传统结构中的电容结构，减少了电容占比，有利于提高像素密度。\n\n[0063]在一个实施例中，本申请实施例提供了一种显示驱动基板的制作方法，包括以下步骤：\n\n[0064]提供玻璃基板；\n\n[0065]在玻璃基板上形成数据金属层、源极金属层、电压源金属层、第一避光层、第二避光层和接地金属层；\n\n[0066]在玻璃基板上形成层间绝缘层；层间绝缘层将数据金属层、源极金属层、电压源金属层、第一避光层和第二避光层隔开；\n\n[0067]形成第一半导体层和第二半导体层；第一半导体层覆盖在层间绝缘层、数据金属层和源极金属层上；第二半导体层覆盖在层间绝缘层、电压源金属层和第一避光层上；\n\n[0068]形成第一栅极绝缘层、第二栅极绝缘层和第三栅极绝缘层；第一栅极绝缘层设置在第一半导体层上；第二栅极绝缘层设置在第二半导体层上；第三栅极绝缘层设置在第二避光层上；\n\n[0069]形成第一栅极金属层、第二栅极金属层和第三栅极金属层；第一栅极金属层设置在第一栅极绝缘层上；第二栅极金属层设置在第二栅极绝缘层上；第三栅极金属层设置在第三栅极绝缘层上；\n\n[0070]形成钝化层，钝化层包覆数据金属层、源极金属层、层间绝缘层隔、第一半导体层、第一栅极绝缘层、第一栅极金属层、电压源金属层、第一避光层、第二半导体层、第二栅极绝缘层、第二栅极金属层、第二避光层、第三栅极绝缘层和第三栅极金属层；\n\n[0071]在接地金属层上形成电源电极金属层。\n\n[0072]需要说明的是，采用沉积工艺、刻蚀工艺等工艺，在玻璃基板上依次形成金属层、源极金属层、层间绝缘层隔、第一半导体层、第一栅极绝缘层、第一栅极金属层、电压源金属层、第一避光层、第二半导体层、第二栅极绝缘层、第二栅极金属层、第二避光层、第三栅极绝缘层、第三栅极金属层和层间绝缘层。其中，沉积工艺可为以下工艺的任意一种：化学气相沉积法(Chemical Vapor Deposition，CVD)、物理气相沉积法(Physical VaporDeposition，PVD)、原子层沉积法(atomic layer deposition，ALD)、低压化学气相沉积法(Low Pressure Chemical Vapor Deposition，LPCVD)、激光烧蚀沉积法(Laser ablationdeposition，LAD)和选择外延生长法(Selective epitaxial growth，SEG)。刻蚀工艺为干法刻蚀或湿法腐蚀。\n\n[0073]本申请显示驱动基板的制作方法，将数据金属层、源极金属层、电压源金属层、第一避光层、第二避光层和接地金属层利用一道金属工艺制程，节约了工序，而且本申请显示驱动基板的结构简单，使得本申请显示驱动基板的制作方法更加简单，由于降低制作成本，提高制作效率。\n\n[0074]在一个实施例中，本申请实施例提供了一种显示面板，包括本申请显示驱动基板各实施例所述的显示驱动。\n\n[0075]以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。\n\n[0076]以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对申请专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。', '技术领域\n\n[0001]本申请涉及显示技术领域，特别是涉及一种显示驱动基板、显示驱动基板的制作方法以及显示面板。\n\n背景技术\n\n[0002]作为新兴显示技术，自发光显示技术相较于传统LCD(Liquid Crystal Display、液晶显示)显示技术具备较多的优势，如较低的功耗，较高的色域，较快的相应速率等，因而被视为较有发展前景的一种显示技术。\n\n[0003]自发光显示技术中OLED(OrganicLight-Emitting Diode，有机发光半导体)/Micro LED(Micro Light Emitting Diode，微型发光二极管)作为电流驱动，需要较大的电流通过能力、较好的器件稳定性、较好的面内电压均匀性、较低的漏电流，一般情况，采用具有较高的迁移率、较小寄生电容和低漏电流的顶栅自对准氧化物半导体薄膜晶体管作为电流驱动器件，但是，在实现过程中，发明人发现传统技术中至少存在如下问题：传统采用顶栅自对准氧化物半导体薄膜晶体管的显示面板结构复杂，制作成本高。\n\n发明内容\n\n[0004]基于此，有必要针对传统采用顶栅自对准氧化物半导体薄膜晶体管的显示面板结构复杂，制作成本高的问题，提供一种显示驱动基板、显示驱动基板的制作方法以及显示面板。\n\n[0005]为了实现上述目的，一方面，本申请实施例提供了一种显示驱动基板，包括N个驱动单元；\n\n[0006]驱动单元包括开关TFT(Thin Film Transistor，薄膜晶体管)区、驱动TFT区、电容区以及LED(Light Emitting Diode，发光二极管)键合区；\n\n[0007]在开关TFT区内，数据金属层和源极金属层设置在玻璃基板上，层间绝缘层隔开数据金属层和源极金属层，第一半导体层设置在层间绝缘层上并连接数据金属层和源极金属层，第一栅极绝缘层和第一栅极金属层依次层叠设置在第一半导体层上；\n\n[0008]在驱动TFT区内，电压源金属层和第一避光层设置在玻璃基板上，层间绝缘层隔开电压源金属层和第一避光层，第二半导体层设置在层间绝缘层上并连接电压源金属层和第一避光层，第二栅极绝缘层和第二栅极金属层的一端依次层叠设置在第二半导体层上；第二栅极金属层的另一端延伸设置在第一半导体层上；\n\n[0009]在电容区内，第二避光层、第三栅极绝缘层和第三栅极金属层依次层叠设置在玻璃基板上；\n\n[0010]LED键合区内，接地金属层和电源电极金属层依次层叠设置在玻璃基板上；电源电极金属层用于键合Micro LED。\n\n[0011]在其中一个实施例中，还包括钝化层；钝化层设置在玻璃基板上，且包覆数据金属层、源极金属层、层间绝缘层隔、第一半导体层、第一栅极绝缘层、第一栅极金属层、电压源金属层、第一避光层、第二半导体层、第二栅极绝缘层、第二栅极金属层、第二避光层、第三栅极绝缘层和第三栅极金属层。\n\n[0012]在其中一个实施例中，数据金属层、源极金属层、电压源金属层、第一避光层、第二避光层和接地金属层的材料为以下材料中的任意一种：Mo、Al/Mo、Mo/Al/Mo、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr和CuN。\n\n[0013]在其中一个实施例中，层间绝缘层的材料为以下材料中的任意一种：SiOx、SiNx、SiNx/SiOx和SiNOx。\n\n[0014]在其中一个实施例中，第一半导体层和第二半导体层的材料为以下材料中的任意一种：IGZO、IGTO、IGZO、IGO和IZO。\n\n[0015]在其中一个实施例中，第一栅极绝缘层、第二栅极绝缘层和第三栅极绝缘层的材料为以下材料中的任意一种：SiOx、SiNx、Al2O3/SiNx/SiOx和SiOx/SiNx/SiOx。\n\n[0016]在其中一个实施例中，第一栅极金属层、第二栅极金属层和第三栅极金属层的材料为以下材料中的任意一种：Mo、Mo/Al、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr和CuNb。\n\n[0017]在其中一个实施例中，电源电极金属层的材料为以下材料中的任意一种：Mo、Mo/Al、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr和CuNb。\n\n[0018]另一方面，本申请实施例提供了一种显示驱动基板的制作方法，包括以下步骤：\n\n[0019]提供玻璃基板；\n\n[0020]在玻璃基板上形成数据金属层、源极金属层、电压源金属层、第一避光层、第二避光层和接地金属层；\n\n[0021]在玻璃基板上形成层间绝缘层；层间绝缘层将数据金属层、源极金属层、电压源金属层、第一避光层和第二避光层隔开；\n\n[0022]形成第一半导体层和第二半导体层；第一半导体层覆盖在层间绝缘层、数据金属层和源极金属层上；第二半导体层覆盖在层间绝缘层、电压源金属层和第一避光层上；\n\n[0023]形成第一栅极绝缘层、第二栅极绝缘层和第三栅极绝缘层；第一栅极绝缘层设置在第一半导体层上；第二栅极绝缘层设置在第二半导体层上；第三栅极绝缘层设置在第二避光层上；\n\n[0024]形成第一栅极金属层、第二栅极金属层和第三栅极金属层；第一栅极金属层设置在第一栅极绝缘层上；第二栅极金属层设置在第二栅极绝缘层上；第三栅极金属层设置在第三栅极绝缘层上；\n\n[0025]形成钝化层，钝化层包覆数据金属层、源极金属层、层间绝缘层隔、第一半导体层、第一栅极绝缘层、第一栅极金属层、电压源金属层、第一避光层、第二半导体层、第二栅极绝缘层、第二栅极金属层、第二避光层、第三栅极绝缘层和第三栅极金属层；\n\n[0026]在接地金属层上形成电源电极金属层。\n\n[0027]另一方面，本申请实施例提供了一种显示面板，包括上述显示驱动基板。\n\n[0028]上述技术方案中的一个技术方案具有如下优点和有益效果：\n\n[0029]本申请各实施例提供的显示驱动基板，包括N个驱动单元；各驱动单元包括开关TFT区、驱动TFT区、电容区以及LED键合区；其中，开关TFT区内的数据金属层和源极金属层设置在玻璃基板上，并通过第一半导体层连接；驱动TFT区内的电压源金属层和第一避光层设置在玻璃基板上，并通过第二半导体层连接，第二栅极金属层的另一端延伸设置在第一半导体层上；电容区内的第二避光层、第三栅极绝缘层和第三栅极金属层依次层叠设置在玻璃基板上，形成电容；LED键合区内的接地金属层和电源电极金属层依次层叠设置在玻璃基板上，电源电极金属层用于键合Micro LED；本申请显示驱动基板中的数据金属层、源极金属层、电压源金属层、第一避光层、第二避光层和接地金属层可采用同一道金属工艺制程，简化了显示驱动基板的工艺流程，另外，利用第一半导体层连接数据金属层和源极金属层，利用第二半导体层连接电压源金属层和第一避光层，使得相对于传统结构可缩小像素内开孔的尺寸，进一步的，通过第二避光层、第三栅极绝缘层和第三栅极金属形成电容，替代了传统结构中的电容结构，减少了电容占比，有利于提高像素密度。\n\n附图说明\n\n[0030]图1为一个实施例中显示驱动基板的结构示意图；\n\n[0031]图2为另一个实施例中显示驱动基板的结构示意图。\n\n具体实施方式\n\n[0032]为了便于理解本申请，下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的首选实施例。但是，本申请可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本申请的公开内容更加透彻全面。\n\n[0033]需要说明的是，当一个元件被认为是“连接”另一个元件，它可以是直接连接到另一个元件并与之结合为一体，或者可能同时存在居中元件。本文所使用的术语“设置”、“一端”、“另一端”以及类似的表述只是为了说明的目的。\n\n[0034]除非另有定义，本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本申请。本文所使用的术语“及/或”包括一个或多个相关的所列项目的任意的和所有的组合。\n\n[0035]为了传统采用顶栅自对准氧化物半导体薄膜晶体管的显示面板结构复杂，制作成本高的问题，在一个实施例中，如图1所示，提供了一种显示驱动基板，包括N个驱动单元；\n\n[0036]驱动单元包括开关TFT区11、驱动TFT区13、电容区15以及LED键合区17；\n\n[0037]在开关TFT区11内，数据金属层111和源极金属层113设置在玻璃基板19上，层间绝缘层21隔开数据金属层111和源极金属层113，第一半导体层115设置在层间绝缘层21上并连接数据金属层111和源极金属层113，第一栅极绝缘层117和第一栅极金属层119依次层叠设置在第一半导体层115上；\n\n[0038]在驱动TFT区13内，电压源金属层131和第一避光层133设置在玻璃基板19上，层间绝缘层21隔开电压源金属层131和第一避光层133，第二半导体层135设置在层间绝缘层21上并连接电压源金属层131和第一避光层133，第二栅极绝缘层137和第二栅极金属层139的一端依次层叠设置在第二半导体层135上；第二栅极金属层139的另一端延伸设置在第一半导体层115上；\n\n[0039]在电容区15内，第二避光层151、第三栅极绝缘层153和第三栅极金属层155依次层叠设置在玻璃基板19上；\n\n[0040]在LED键合区17内，接地金属层171和电源电极金属层173依次层叠设置在玻璃基板19上；电源电极金属层173用于键合Micro LED。\n\n[0041]需要说明的是，在显示驱动基板的制作工艺流程中，在开关TFT区内形成开关TFT，在驱动TFT区内形成驱动TFT，在电容区内形成电容，在LED键合区内键合LED。\n\n[0042]在开关TFT区内包括数据金属层、源极金属层、第一半导体层、第一栅极绝缘层和第一栅极金属层，其中，数据金属层和源极金属层设置在玻璃基板上，并通过层间绝缘层隔开，第一半导体层形成在数据金属层、源极金属层和层间绝缘层隔上，连接数据金属层和源极金属层，第一栅极绝缘层和第一栅极金属层依次层叠设置在第一半导体层上。\n\n[0043]在一个示例中，数据金属层的材料为以下材料中的任意一种：Mo(钼)、Al(铝)/Mo、Mo/Al/Mo、Mo/Cu(铜)、Mo/Cu/IZO(氧化铟锌)、IZO/Cu/IZO、Mo/Cu/ITO(氧化铟锡)、Ni(镍)/Cu/Ni、MoTi(钛)Ni/Cu/MoTiNi、NiCr(铬)/Cu/NiCr和CuN(氮)。\n\n[0044]在一个示例中，源极金属层的材料为以下材料中的任意一种：Mo、Al/Mo、Mo/Al/Mo、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr和CuN。\n\n[0045]在一个示例中，层间绝缘层的材料为以下材料中的任意一种：SiOx(氧化硅)、SiNx(氮化硅)、SiNx/SiOx和SiNOx。\n\n[0046]在一个示例中，第一半导体层的材料为以下材料中的任意一种：IGZO(铟镓锌氧化物)、IGTO(铟镓钛氧化物)、IGZO(铟镓锌氧化物)、IGO(铟镓氧化物和IZO(铟锌氧化物)。\n\n[0047]在一个示例中，第一栅极绝缘层的材料为以下材料中的任意一种：SiOx、SiNx、Al2O3/SiNx/SiOx和SiOx/SiNx/SiOx。\n\n[0048]在一个示例中，第一栅极金属层的材料为以下材料中的任意一种：Mo、Mo/Al、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr和CuNb(铌)。\n\n[0049]驱动TFT区包括电压源金属层、第一避光层、第二半导体层、第二栅极绝缘层和第二栅极金属层；电压源金属层和第一避光层设置在玻璃基板上，并通过层间绝缘层隔开，第二半导体层形成在电压源金属层、第一避光层和层间绝缘层上，连接电压源金属层和第一避光层，第二栅极绝缘层设置在第二半导体层上，第二栅极金属层的一端设置在第二半导体层上，另一端设置在第一半导体，即通过第二栅极金属层连通开关TFT和启动TFT。\n\n[0050]在一个示例中，电压源金属层的材料为以下材料中的任意一种：Mo、Al/Mo、Mo/Al/Mo、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr和CuN。\n\n[0051]在一个示例中，第一避光层的材料为以下材料中的任意一种：Mo、Al/Mo、Mo/Al/Mo、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr和CuN。\n\n[0052]在一个示例中，第二半导体层的材料为以下材料中的任意一种：IGZO、IGTO、IGZO、IGO和IZO。\n\n[0053]在一个示例中，第二栅极绝缘层的材料为以下材料中的任意一种：SiOx、SiNx、Al2O3/SiNx/SiOx和SiOx/SiNx/SiOx。\n\n[0054]在一个示例中，第二栅极金属层的材料为以下材料中的任意一种：Mo、Mo/Al、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr和CuNb。\n\n[0055]在电容区内包括第二避光层、第三栅极绝缘层和第三栅极金属层，第二避光层、第三栅极绝缘层和第三栅极金属层形成电路，取代了传统结构中电容Cst ILD。\n\n[0056]在一个示例中，第二避光层的材料为以下材料中的任意一种：Mo、Al/Mo、Mo/Al/Mo、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr和CuN。\n\n[0057]在一个示例中，第三栅极绝缘层的材料为以下材料中的任意一种：SiOx、SiNx、Al2O3/SiNx/SiOx和SiOx/SiNx/SiOx。\n\n[0058]在一个示例中，第三栅极金属层的材料为以下材料中的任意一种：Mo、Mo/Al、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr和CuNb。\n\n[0059]LED键合区内包括接地金属层和电源电极金属层，其中，电源电极金属层用于键合Micro LED。在一个示例中，接地金属层的材料为以下材料中的任意一种：Mo、Al/Mo、Mo/Al/Mo、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr和CuN。在一个示例中，电源电极金属层的材料为以下材料中的任意一种：Mo、Mo/Al、Mo/Cu、Mo/Cu/IZO、IZO/Cu/IZO、Mo/Cu/ITO、Ni/Cu/Ni、MoTiNi/Cu/MoTiNi、NiCr/Cu/NiCr和CuNb。\n\n[0060]进一步的，如图2所示，显示驱动基板还包括钝化层23；钝化层23设置在玻璃基板19上，且包覆数据金属层111、源极金属层113、层间绝缘层隔21、第一半导体层115、第一栅极绝缘层117、第一栅极金属层119、电压源金属层131、第一避光层133、第二半导体层135、第二栅极绝缘层137、第二栅极金属层139、第二避光层151、第三栅极绝缘层153和第三栅极金属层155。\n\n[0061]在一个示例中，钝化层的材料为以下材料中任意一种：SiOx、SiNx和SiNOx。\n\n[0062]本申请显示驱动基板提供的各实施例中，包括N个驱动单元；各驱动单元包括开关TFT区、驱动TFT区、电容区以及LED键合区；其中，开关TFT区内的数据金属层和源极金属层设置在玻璃基板上，并通过第一半导体层连接；驱动TFT区内的电压源金属层和第一避光层设置在玻璃基板上，并通过第二半导体层连接，第二栅极金属层的另一端延伸设置在第一半导体层上；电容区内的第二避光层、第三栅极绝缘层和第三栅极金属层依次层叠设置在玻璃基板上，形成电容；LED键合区内的接地金属层和电源电极金属层依次层叠设置在玻璃基板上，电源电极金属层用于键合Micro LED；本申请显示驱动基板中的数据金属层、源极金属层、电压源金属层、第一避光层、第二避光层和接地金属层可采用同一道金属工艺制程，简化了显示驱动基板的工艺流程，另外，利用第一半导体层连接数据金属层和源极金属层，利用第二半导体层连接电压源金属层和第一避光层，使得相对于传统结构可缩小像素内开孔的尺寸，进一步的，通过第二避光层、第三栅极绝缘层和第三栅极金属形成电容，替代了传统结构中的电容结构，减少了电容占比，有利于提高像素密度。\n\n[0063]在一个实施例中，本申请实施例提供了一种显示驱动基板的制作方法，包括以下步骤：\n\n[0064]提供玻璃基板；\n\n[0065]在玻璃基板上形成数据金属层、源极金属层、电压源金属层、第一避光层、第二避光层和接地金属层；\n\n[0066]在玻璃基板上形成层间绝缘层；层间绝缘层将数据金属层、源极金属层、电压源金属层、第一避光层和第二避光层隔开；\n\n[0067]形成第一半导体层和第二半导体层；第一半导体层覆盖在层间绝缘层、数据金属层和源极金属层上；第二半导体层覆盖在层间绝缘层、电压源金属层和第一避光层上；\n\n[0068]形成第一栅极绝缘层、第二栅极绝缘层和第三栅极绝缘层；第一栅极绝缘层设置在第一半导体层上；第二栅极绝缘层设置在第二半导体层上；第三栅极绝缘层设置在第二避光层上；\n\n[0069]形成第一栅极金属层、第二栅极金属层和第三栅极金属层；第一栅极金属层设置在第一栅极绝缘层上；第二栅极金属层设置在第二栅极绝缘层上；第三栅极金属层设置在第三栅极绝缘层上；\n\n[0070]形成钝化层，钝化层包覆数据金属层、源极金属层、层间绝缘层隔、第一半导体层、第一栅极绝缘层、第一栅极金属层、电压源金属层、第一避光层、第二半导体层、第二栅极绝缘层、第二栅极金属层、第二避光层、第三栅极绝缘层和第三栅极金属层；\n\n[0071]在接地金属层上形成电源电极金属层。\n\n[0072]需要说明的是，采用沉积工艺、刻蚀工艺等工艺，在玻璃基板上依次形成金属层、源极金属层、层间绝缘层隔、第一半导体层、第一栅极绝缘层、第一栅极金属层、电压源金属层、第一避光层、第二半导体层、第二栅极绝缘层、第二栅极金属层、第二避光层、第三栅极绝缘层、第三栅极金属层和层间绝缘层。其中，沉积工艺可为以下工艺的任意一种：化学气相沉积法(Chemical Vapor Deposition，CVD)、物理气相沉积法(Physical VaporDeposition，PVD)、原子层沉积法(atomic layer deposition，ALD)、低压化学气相沉积法(Low Pressure Chemical Vapor Deposition，LPCVD)、激光烧蚀沉积法(Laser ablationdeposition，LAD)和选择外延生长法(Selective epitaxial growth，SEG)。刻蚀工艺为干法刻蚀或湿法腐蚀。\n\n[0073]本申请显示驱动基板的制作方法，将数据金属层、源极金属层、电压源金属层、第一避光层、第二避光层和接地金属层利用一道金属工艺制程，节约了工序，而且本申请显示驱动基板的结构简单，使得本申请显示驱动基板的制作方法更加简单，由于降低制作成本，提高制作效率。\n\n[0074]在一个实施例中，本申请实施例提供了一种显示面板，包括本申请显示驱动基板各实施例所述的显示驱动。\n\n[0075]以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。\n\n[0076]以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对申请专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10878, 23932, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种灯板及其制造方法、显示装置。\n\n背景技术\n\n[0002]微型化发光二极管发展成未来显示技术的热点之一，和目前的液晶显示器(Liquid Crystal Display，LCD)、有机发光二极管(Organic Light Emitting Diode，OLED)显示器件相比，具有反应快、高色域、高分辨率、低能耗等优势。然而，微型发光二极管技术难点多且技术复杂，特别是其关键技术巨量转移技术发光二极管颗粒微型化成为技术瓶颈，而次毫米发光二极管(Mini-LED)作为微型化发光二极管与背板结合的产物，具有高对比度、高显色性能等可与有机发光二极管相媲美的特点，成本稍高液晶显示器，仅为有机发光二极管的六成左右，相对微型发光二极管(Micro-LED)、有机发光二极管更易实施，所以次毫米发光二极管成为各大面板厂商布局热点。\n\n[0003]目前，如何减小次毫米发光二极管背光模组的光罩使用数目且保证次毫米发光二极管背光模组的可靠性是需要解决的问题。\n\n发明内容\n\n[0004]本申请的目的在于提供一种灯板及其制造方法、显示装置，以减小光罩使用数目且保证灯板的可靠性。\n\n[0005]为实现上述目的，一种灯板的制造方法，所述方法包括如下步骤：\n\n[0006]于基板上形成第一图案化导电层，所述第一图案化导电层包括设置于第一区域的栅极以及设置于第二区域的第一导电构件，所述基板具有相互间隔的所述第一区域、第二区域以及第三区域；\n\n[0007]依次形成覆盖所述第一图案化导电层以及所述基板的第一绝缘层以及半导体层，采用第一半色调掩模板对所述第一绝缘层以及所述半导体层进行图案化，于所述第一绝缘层和所述半导体层上形成对应所述第一导电构件设置的过孔且形成图案化半导体层，所述图案化半导体层包括对应所述栅极设置的有源层；\n\n[0008]于所述过孔中、所述第一绝缘层上以及所述图案化半导体层上形成第二导电层，于所述第二导电层上形成第三导电层，采用第二半色调掩模板对所述第二导电层以及所述第三导电层进行图案化，形成第二图案化导电层且于第二导电构件上形成第三导电构件，所述第二图案化导电层包括形成于所述第二区域的所述第二导电构件、形成于所述第一区域的源漏电极以及形成于所述第三区域的导电垫，所述第二导电构件通过所述过孔与第一导电构件电性连接，所述源漏电极设置于所述有源层上；\n\n[0009]形成覆盖所述第一绝缘层、所述源漏电极、所述有源层且使所述第三导电构件以及所述导电垫显露的第二绝缘层；\n\n[0010]将发光元件通过连接件绑定于所述导电垫上，得到所述灯板。\n\n[0011]在上述灯板的制造方法中，所述第三导电构件的制备材料包括氧化铟锡，所述第二图案化导电层的制备材料包括铜，所述连接件的制备材料包括锡。\n\n[0012]在上述灯板的制造方法中，所述采用第一半色调掩模板对所述第一绝缘层以及所述半导体层进行图案化包括如下步骤：\n\n[0013]于所述半导体层上形成光阻层，利用第一半色调掩模板对所述光阻层进行曝光以定义出第一光阻去除区、第一光阻半保留区以及第一光阻完全保留区；所述第一光阻去除区对应所述第一导电构件，所述第一区域和所述第二区域之间的区域、所述第一区域和所述第三区域之间的区域对应所述第一光阻半保留区，所述第一区域、所述第二区域的部分区域以及所述第三区域对应所述第一光阻完全保留区；用显影液对曝光后的所述光阻层进行显影；\n\n[0014]蚀刻去除所述第一光阻去除区的半导体层以及第一绝缘层，形成所述过孔；\n\n[0015]去除所述第一光阻半保留区的所述光阻层，蚀刻去除所述第一光阻半保留区的所述半导体层，去除所述第一光阻完全保留区的所述光阻层，形成所述图案化半导体层。\n\n[0016]在上述灯板的制造方法中，采用第二半色调掩模板对所述第二导电层以及所述第三导电层进行图案化包括如下步骤：\n\n[0017]于所述第三导电层上形成光阻层，利用第二半色调掩模板对所述光阻层进行曝光以定义出第二光阻去除区、第二光阻半保留区以及第二光阻完全保留区；所述第一区域和所述第二区域之间、所述第一区域和所述第三区域之间的区域以及所述第一区域的部分区域对应所述第二光阻去除区，所述第一区域的部分区域以及所述第三区域对应所述第二光阻半保留区，所述第二区域对应所述第二光阻完全保留区；用显影液对曝光后的所述光阻层进行显影；\n\n[0018]蚀刻去除所述第二光阻去除区的所述第三导电层以及所述第二导电层；\n\n[0019]去除所述第二光阻半保留区的所述光阻层，蚀刻去除所述第二光阻半保留区的所述第三导电层，去除所述第二光阻完全保留区的光阻层，形成所述第二图案化导电层且于所述第二导电构件上形成所述第三导电构件。\n\n[0020]在上述灯板的制造方法中，所述发光元件包括次毫米发光二极管以及微型发光二极管中的至少一种。\n\n[0021]一种灯板，所述灯板包括：\n\n[0022]于基板上形成的第一图案化导电层，所述第一图案化导电层包括栅极以及第一导电构件；\n\n[0023]依次覆盖所述第一图案化导电层的第一绝缘层以及图案化半导体层，所述第一绝缘层和所述图案化半导体层上设置有对应所述第一导电构件设置的过孔，所述图案化半导体层包括对应所述栅极设置的有源层；\n\n[0024]于所述图案化半导体层上形成的第二图案化导电层且于第二导电构件上形成第三导电构件，所述第二图案化导电层包括所述第二导电构件、源漏电极以及导电垫，所述第二导电构件通过所述过孔与第一导电构件电性连接，所述源漏电极设置于所述有源层上；\n\n[0025]覆盖所述第一绝缘层、所述源漏电极、所述有源层且使所述第三导电构件以及所述导电垫显露的第二绝缘层；\n\n[0026]通过连接件绑定于所述导电垫上的发光元件。\n\n[0027]在上述灯板中，所述第三导电构件的制备材料包括氧化铟锡，所述第二图案化导电层的制备材料包括铜，所述连接件的制备材料包括锡。\n\n[0028]在上述灯板中，所述第一绝缘层的制备材料选自氮化硅以及氧化硅中的至少一种，所述第二绝缘层的制备材料选自氮化硅以及氧化硅中的至少一种。\n\n[0029]在上述灯板中，所述发光元件包括次毫米发光二极管以及微型发光二极管中的至少一种。\n\n[0030]一种显示装置，所述显示装置包括上述灯板和显示面板，所述显示面板位于所述灯板的出光侧。\n\n[0031]有益效果：本申请提供一种灯板及其制造方法、显示装置，本申请采用第一半色调掩模板对第一绝缘层以及半导体层进行图案化，且采用第二半色调掩模板对第二导电层以及第三导电层进行图案化，以减少光罩使用数目，且第三导电构件形成于第二导电构件上能避免第二导电构件氧化，避免第二导电构件、第三导电构件以及第一导电构件电性连接失效的问题。\n\n附图说明\n\n[0032]图1为传统背光模组的第一种示意图；\n\n[0033]图2为传统背光模组的第二种示意图；\n\n[0034]图3为本申请灯板的制造方法的流程示意图；\n\n[0035]图4A-4H为制造本申请灯板的过程示意图。\n\n具体实施方式\n\n[0036]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0037]请参阅图1，其为传统背光模组的第一种示意图。背光模组包括基板100、第一图案化导电层101、第一绝缘层102、图案化半导体层103、第二图案化导电层104、第二绝缘层105以及氧化铟锡层106。\n\n[0038]第一图案化导电层101形成于基板100上，第一图案化导电层101包括栅极1011以及第一导电构件1012。第一绝缘层102覆盖第一图案化导电层101以及基板100。图案化半导体层103形成于第一绝缘层102上，图案化半导体层103和第一绝缘层102上设置有对应第一导电构件1012设置的第一过孔100a，图案化半导体层103包括对应栅极1011设置的有源层1031。第二图案化导电层104形成于图案化半导体层103上，第二图案化导电层104包括第二导电构件1041、源漏电极(1042，1043)以及导电垫1044，第二导电构件1041通过第一过孔100a与第一导电构件1012连接，源漏电极(1042，1043)设置于有源层1031上。第二绝缘层105覆盖第一绝缘层102、源漏电极(1042，1043)以及有源层1031。第二绝缘层105上对应第二导电构件1041设置有第二过孔100b且使导电垫1044显露。氧化铟锡层106设置于第二绝缘层105上且通过第二过孔100b与第二导电构件1041电性连接。\n\n[0039]图1所示传统背光模组是使用5个光罩制备得到，且氧化铟锡层106自身电阻大且易老化，氧化铟锡层106通过第二过孔100b与第二导电构件1041连接，容易出现电性连接失效的问题，导致绑定于导电垫1044上的发光元件点亮过程中出现死灯情况，严重影响良率。\n\n[0040]请参阅图2，其为传统背光模组的第二种示意图。背光模组包括基板200、第一图案化导电层201、第一绝缘层202、图案化半导体层203、第二图案化导电层204、第二绝缘层205以及氧化铟锡层206。\n\n[0041]第一图案化导电层201形成于基板200上，第一图案化导电层201包括栅极2011以及第一导电构件2012。第一绝缘层202覆盖第一图案化导电层201以及基板200。图案化半导体层203形成于第一绝缘层202上，图案化半导体层203包括对应栅极2011设置的有源层2031。第二图案化导电层204形成于图案化半导体层203上，第二图案化导电层204包括第二导电构件2041、源漏电极(2042，2043)以及导电垫2044，源漏电极(2042，2043)设置于有源层2031上。第二绝缘层205覆盖第二图案化导电层204、第一绝缘层202以及有源层2031且使导电垫2044显露。氧化铟锡层206形成于第二绝缘层205上。氧化铟锡层206通过第二绝缘层205上的第一过孔206a与第二导电构件2041连接，且通过第一绝缘层202和第二绝缘层205上连通的第二过孔206b与第一导电构件2012连接。\n\n[0042]图2所示背光模组是使用4个光罩制备得到，由于氧化铟锡层206电阻较大且容易老化，氧化铟锡层206桥接第一导电构件2012以及第二导电构件2041容易失效，导致绑定于导电垫2044上的发光元件点亮过程中出现死灯情况，严重影响良率。\n\n[0043]请参阅图3，其为本申请灯板的制造方法的流程示意图。灯板的制造方法包括如下步骤：\n\n[0044]S100：于基板上形成第一图案化导电层，第一图案化导电层包括设置于第一区域的栅极以及设置于第二区域的第一导电构件，基板具有相互间隔的第一区域、第二区域以及第三区域。\n\n[0045]具体地，提供一基板300，于基板300上形成整面的第一导电层，于第一导电层上形成整面的光阻层，利用第一光罩对光阻层进行曝光，经过显影液显影以及蚀刻第一导电层，于第一区域300a形成栅极3011，且于第二区域300b形成第一导电构件3012，如图4A所示。第一区域300a位于第二区域300b和第三区域300c之间，第一区域300a和第二区域300b之间具有间隔，第一区域300a和第三区域300c之间具有间隔。第一导电层的制备材料包括钼、铝、钛以及铜中的至少一种。\n\n[0046]S101：依次形成覆盖第一图案化导电层以及基板的第一绝缘层以及半导体层，采用第一半色调掩模板对第一绝缘层以及半导体层进行图案化，于第一绝缘层和半导体层上形成对应第一导电构件设置的过孔且形成图案化半导体层，图案化半导体层包括对应栅极设置的有源层。\n\n[0047]首先，采用化学气相沉积以形成覆盖第一图案化导电层以及基板的第一绝缘层302。第一绝缘层302为氮化硅层以及氧化硅层中的至少一种。\n\n[0048]接着，于第一绝缘层302形成半导体层，半导体层包括依次叠置于第一绝缘层302上的第一半导体层3031以及第二半导体层3032，第一半导体层3031为非晶硅(α-Si)层，第二半导体层3032为N掺杂非晶硅(N+α-Si)层。\n\n[0049]接着，于第二半导体层3032形成第一光阻层304，利用第一半色调掩模板对第一光阻层304进行曝光以定义出第一光阻去除区、第一光阻半保留区以及第一光阻完全保留区，第一光阻去除区对应第一导电构件3012，第一区域300a和第二区域300b之间的区域、第一区域300a和第三区域300c之间的区域对应第一光阻半保留区，第一区域300a、第二区域300b的部分区域以及第三区域300c对应第一光阻完全保留区。\n\n[0050]接着，用显影液对曝光后的第一光阻层304进行显影，去除第一光阻去除区的第一光阻层，如图4B所示。其中，显影液对第一光阻层304显影后，第一光阻半保留区的第一光阻层的厚度小于第一光阻完全保留区的第一光阻层的厚度。\n\n[0051]采用干法蚀刻去除第一光阻去除区的半导体层(3031，3032)以及第一绝缘层302以形成过孔300d；去除第一光阻半保留区的第一光阻层，干法蚀刻去除第一光阻半保留区的半导体层，去除第一光阻完全保留区的第一光阻层，形成图案化半导体层，如图4C所示，图案化半导体层包括有源层30311，有源层30311为位于第一区域300a的第一半导体层3031。\n\n[0052]S102：于过孔中、第一绝缘层上以及图案化半导体层上形成第二导电层，于第二导电层上形成第三导电层，采用第二半色调掩模板对第二导电层以及第三导电层进行图案化，形成第二图案化导电层且于第二导电构件上形成第三导电构件。\n\n[0053]首先，采用溅射沉积于过孔300d中、第一绝缘层上302以及图案化半导体层上形成第二导电层305，第二导电层305包括铜层；再采用溅射沉积于第二导电层305上形成第三导电层306，第三导电层306为氧化铟锡层。\n\n[0054]接着，于第三导电层306上形成第二光阻层307，利用第二半色调掩模板对第二光阻层307进行曝光以定义出第二光阻去除区、第二光阻半保留区以及第二光阻完全保留区；第一区域300a和第二区域300b之间、第一区域300a和第三区域300c之间的区域以及第一区域300a的部分区域对应第二光阻去除区，第一区域300a的部分区域以及第三区域300c对应第二光阻半保留区，第二区域300b对应第二光阻完全保留区，用显影液对曝光后的第二光阻层进行显影，第二光阻去除区的第二光阻层完全去除，第二光阻半保留区的第二光阻层的厚度小于第二光阻完全保留区的厚度，如图4D所示。\n\n[0055]采用湿法蚀刻去除第二光阻去除区的第三导电层306以及第二导电层305，如图4E所示；再采用干法蚀刻第一区域300a的部分区域的第二半导体层3032，以使有源层30311形成沟道，如图4F所示；去除第二光阻半保留区的第二光阻层，湿法蚀刻去除第二光阻半保留区的第三导电层306，如图4G所示；去除第二光阻完全保留区的光阻层，形成第二图案化导电层且于第二导电构件3051上形成第三导电构件3061，第二图案化导电层包括形成于第二区域300b的第二导电构件3051、形成于第一区域300a的源漏电极(3052，3053)以及形成于第三区域300c的导电垫3054，第二导电构件3051通过过孔300d与第一导电构件3012电性连接，源漏电极(3052，3053)设置于有源层30311上。\n\n[0056]S103：形成覆盖第一绝缘层、源漏电极、有源层且使第三导电构件以及导电垫显露的第二绝缘层。\n\n[0057]具体地，采用化学溅射沉积形成覆盖第一绝缘层302、第三导电构件3061、源漏电极(3052，3053)以及导电垫3054的第二绝缘层308，在第二绝缘层308形成光阻层，采用第二光罩对光阻层进行曝光以及显影液显影，干法蚀刻第二区域300b和第三区域300c的第二绝缘层308，以使第三导电构件3061以及导电垫3054显露。\n\n[0058]S104：将发光元件通过连接件绑定于导电垫上，得到灯板。\n\n[0059]具体地，连接件310的制备材料包括锡，发光元件309为次毫米发光二极管，将发光元件309用锡膏绑定于导电垫3054上，由于导电垫3054由铜制备得到，锡膏在铜上具有良好的附着力，使得发光元件309能牢固地固定于导电垫3054上，如图4H所示。由于第三导电构件3061形成第二导电构件3051上，能避免第三导电构件3061与第二导电构件3051之间电性连接失效，第二导电构件3051与第一导电构件3012通过过孔300d电性连接能保证两者之间电性连接良好。\n\n[0060]在此步骤中，还需要将覆晶薄膜(未示出)绑定于第三导电构件3061上。\n\n[0061]本申请灯板采用第一光罩、第二光罩、第一半色调掩模板以及第二半色调掩模板制备得到，提供一种新的4光罩(mask)制备灯板的方法。保证发光元件能牢固地固定于导电垫上的同时，第一导电构件、第二导电构件以及第三导电构件不会电性连接失效，保证发光元件能正常地发光。\n\n[0062]本申请还提供一种显示装置，显示装置包括灯板以及显示面板，显示面板位于灯板的出光侧，显示面板为液晶显示面板。灯板包括：\n\n[0063]于基板上形成的第一图案化导电层，第一图案化导电层包括栅极以及第一导电构件；\n\n[0064]依次覆盖第一图案化导电层的第一绝缘层以及图案化半导体层，第一绝缘层和图案化半导体层上设置有对应第一导电构件设置的过孔，图案化半导体层包括对应栅极设置的有源层；\n\n[0065]于图案化半导体层上形成的第二图案化导电层且于第二导电构件上形成第三导电构件，第二图案化导电层包括第二导电构件、源漏电极以及导电垫，第二导电构件通过过孔与第一导电构件电性连接，源漏电极设置于有源层上；\n\n[0066]覆盖第一绝缘层、源漏电极、有源层且使第三导电构件以及导电垫显露的第二绝缘层；\n\n[0067]通过连接件绑定于导电垫上的发光元件。\n\n[0068]在本实施例中，第三导电构件的制备材料包括氧化铟锡，第二图案化导电层的制备材料包括铜，连接件的制备材料包括锡。\n\n[0069]在本实施例中，第一绝缘层的制备材料选自氮化硅以及氧化硅中的至少一种，第二绝缘层的制备材料选自氮化硅以及氧化硅中的至少一种。\n\n[0070]在本实施例中，发光元件包括次毫米发光二极管以及微型发光二极管中的至少一种。\n\n[0071]本申请显示装置的灯板的第三导电构件形成于第二导电构件上能避免第二导电构件氧化，避免第二导电构件、第三导电构件以及第一导电构件电性连接失效的问题，保证发光元件能正常的发光，使得灯板能发出均匀的光。\n\n[0072]以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种灯板及其制造方法、显示装置。\n\n背景技术\n\n[0002]微型化发光二极管发展成未来显示技术的热点之一，和目前的液晶显示器(Liquid Crystal Display，LCD)、有机发光二极管(Organic Light Emitting Diode，OLED)显示器件相比，具有反应快、高色域、高分辨率、低能耗等优势。然而，微型发光二极管技术难点多且技术复杂，特别是其关键技术巨量转移技术发光二极管颗粒微型化成为技术瓶颈，而次毫米发光二极管(Mini-LED)作为微型化发光二极管与背板结合的产物，具有高对比度、高显色性能等可与有机发光二极管相媲美的特点，成本稍高液晶显示器，仅为有机发光二极管的六成左右，相对微型发光二极管(Micro-LED)、有机发光二极管更易实施，所以次毫米发光二极管成为各大面板厂商布局热点。\n\n[0003]目前，如何减小次毫米发光二极管背光模组的光罩使用数目且保证次毫米发光二极管背光模组的可靠性是需要解决的问题。\n\n发明内容\n\n[0004]本申请的目的在于提供一种灯板及其制造方法、显示装置，以减小光罩使用数目且保证灯板的可靠性。\n\n[0005]为实现上述目的，一种灯板的制造方法，所述方法包括如下步骤：\n\n[0006]于基板上形成第一图案化导电层，所述第一图案化导电层包括设置于第一区域的栅极以及设置于第二区域的第一导电构件，所述基板具有相互间隔的所述第一区域、第二区域以及第三区域；\n\n[0007]依次形成覆盖所述第一图案化导电层以及所述基板的第一绝缘层以及半导体层，采用第一半色调掩模板对所述第一绝缘层以及所述半导体层进行图案化，于所述第一绝缘层和所述半导体层上形成对应所述第一导电构件设置的过孔且形成图案化半导体层，所述图案化半导体层包括对应所述栅极设置的有源层；\n\n[0008]于所述过孔中、所述第一绝缘层上以及所述图案化半导体层上形成第二导电层，于所述第二导电层上形成第三导电层，采用第二半色调掩模板对所述第二导电层以及所述第三导电层进行图案化，形成第二图案化导电层且于第二导电构件上形成第三导电构件，所述第二图案化导电层包括形成于所述第二区域的所述第二导电构件、形成于所述第一区域的源漏电极以及形成于所述第三区域的导电垫，所述第二导电构件通过所述过孔与第一导电构件电性连接，所述源漏电极设置于所述有源层上；\n\n[0009]形成覆盖所述第一绝缘层、所述源漏电极、所述有源层且使所述第三导电构件以及所述导电垫显露的第二绝缘层；\n\n[0010]将发光元件通过连接件绑定于所述导电垫上，得到所述灯板。\n\n[0011]在上述灯板的制造方法中，所述第三导电构件的制备材料包括氧化铟锡，所述第二图案化导电层的制备材料包括铜，所述连接件的制备材料包括锡。\n\n[0012]在上述灯板的制造方法中，所述采用第一半色调掩模板对所述第一绝缘层以及所述半导体层进行图案化包括如下步骤：\n\n[0013]于所述半导体层上形成光阻层，利用第一半色调掩模板对所述光阻层进行曝光以定义出第一光阻去除区、第一光阻半保留区以及第一光阻完全保留区；所述第一光阻去除区对应所述第一导电构件，所述第一区域和所述第二区域之间的区域、所述第一区域和所述第三区域之间的区域对应所述第一光阻半保留区，所述第一区域、所述第二区域的部分区域以及所述第三区域对应所述第一光阻完全保留区；用显影液对曝光后的所述光阻层进行显影；\n\n[0014]蚀刻去除所述第一光阻去除区的半导体层以及第一绝缘层，形成所述过孔；\n\n[0015]去除所述第一光阻半保留区的所述光阻层，蚀刻去除所述第一光阻半保留区的所述半导体层，去除所述第一光阻完全保留区的所述光阻层，形成所述图案化半导体层。\n\n[0016]在上述灯板的制造方法中，采用第二半色调掩模板对所述第二导电层以及所述第三导电层进行图案化包括如下步骤：\n\n[0017]于所述第三导电层上形成光阻层，利用第二半色调掩模板对所述光阻层进行曝光以定义出第二光阻去除区、第二光阻半保留区以及第二光阻完全保留区；所述第一区域和所述第二区域之间、所述第一区域和所述第三区域之间的区域以及所述第一区域的部分区域对应所述第二光阻去除区，所述第一区域的部分区域以及所述第三区域对应所述第二光阻半保留区，所述第二区域对应所述第二光阻完全保留区；用显影液对曝光后的所述光阻层进行显影；\n\n[0018]蚀刻去除所述第二光阻去除区的所述第三导电层以及所述第二导电层；\n\n[0019]去除所述第二光阻半保留区的所述光阻层，蚀刻去除所述第二光阻半保留区的所述第三导电层，去除所述第二光阻完全保留区的光阻层，形成所述第二图案化导电层且于所述第二导电构件上形成所述第三导电构件。\n\n[0020]在上述灯板的制造方法中，所述发光元件包括次毫米发光二极管以及微型发光二极管中的至少一种。\n\n[0021]一种灯板，所述灯板包括：\n\n[0022]于基板上形成的第一图案化导电层，所述第一图案化导电层包括栅极以及第一导电构件；\n\n[0023]依次覆盖所述第一图案化导电层的第一绝缘层以及图案化半导体层，所述第一绝缘层和所述图案化半导体层上设置有对应所述第一导电构件设置的过孔，所述图案化半导体层包括对应所述栅极设置的有源层；\n\n[0024]于所述图案化半导体层上形成的第二图案化导电层且于第二导电构件上形成第三导电构件，所述第二图案化导电层包括所述第二导电构件、源漏电极以及导电垫，所述第二导电构件通过所述过孔与第一导电构件电性连接，所述源漏电极设置于所述有源层上；\n\n[0025]覆盖所述第一绝缘层、所述源漏电极、所述有源层且使所述第三导电构件以及所述导电垫显露的第二绝缘层；\n\n[0026]通过连接件绑定于所述导电垫上的发光元件。\n\n[0027]在上述灯板中，所述第三导电构件的制备材料包括氧化铟锡，所述第二图案化导电层的制备材料包括铜，所述连接件的制备材料包括锡。\n\n[0028]在上述灯板中，所述第一绝缘层的制备材料选自氮化硅以及氧化硅中的至少一种，所述第二绝缘层的制备材料选自氮化硅以及氧化硅中的至少一种。\n\n[0029]在上述灯板中，所述发光元件包括次毫米发光二极管以及微型发光二极管中的至少一种。\n\n[0030]一种显示装置，所述显示装置包括上述灯板和显示面板，所述显示面板位于所述灯板的出光侧。\n\n[0031]有益效果：本申请提供一种灯板及其制造方法、显示装置，本申请采用第一半色调掩模板对第一绝缘层以及半导体层进行图案化，且采用第二半色调掩模板对第二导电层以及第三导电层进行图案化，以减少光罩使用数目，且第三导电构件形成于第二导电构件上能避免第二导电构件氧化，避免第二导电构件、第三导电构件以及第一导电构件电性连接失效的问题。\n\n附图说明\n\n[0032]图1为传统背光模组的第一种示意图；\n\n[0033]图2为传统背光模组的第二种示意图；\n\n[0034]图3为本申请灯板的制造方法的流程示意图；\n\n[0035]图4A-4H为制造本申请灯板的过程示意图。\n\n具体实施方式\n\n[0036]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0037]请参阅图1，其为传统背光模组的第一种示意图。背光模组包括基板100、第一图案化导电层101、第一绝缘层102、图案化半导体层103、第二图案化导电层104、第二绝缘层105以及氧化铟锡层106。\n\n[0038]第一图案化导电层101形成于基板100上，第一图案化导电层101包括栅极1011以及第一导电构件1012。第一绝缘层102覆盖第一图案化导电层101以及基板100。图案化半导体层103形成于第一绝缘层102上，图案化半导体层103和第一绝缘层102上设置有对应第一导电构件1012设置的第一过孔100a，图案化半导体层103包括对应栅极1011设置的有源层1031。第二图案化导电层104形成于图案化半导体层103上，第二图案化导电层104包括第二导电构件1041、源漏电极(1042，1043)以及导电垫1044，第二导电构件1041通过第一过孔100a与第一导电构件1012连接，源漏电极(1042，1043)设置于有源层1031上。第二绝缘层105覆盖第一绝缘层102、源漏电极(1042，1043)以及有源层1031。第二绝缘层105上对应第二导电构件1041设置有第二过孔100b且使导电垫1044显露。氧化铟锡层106设置于第二绝缘层105上且通过第二过孔100b与第二导电构件1041电性连接。\n\n[0039]图1所示传统背光模组是使用5个光罩制备得到，且氧化铟锡层106自身电阻大且易老化，氧化铟锡层106通过第二过孔100b与第二导电构件1041连接，容易出现电性连接失效的问题，导致绑定于导电垫1044上的发光元件点亮过程中出现死灯情况，严重影响良率。\n\n[0040]请参阅图2，其为传统背光模组的第二种示意图。背光模组包括基板200、第一图案化导电层201、第一绝缘层202、图案化半导体层203、第二图案化导电层204、第二绝缘层205以及氧化铟锡层206。\n\n[0041]第一图案化导电层201形成于基板200上，第一图案化导电层201包括栅极2011以及第一导电构件2012。第一绝缘层202覆盖第一图案化导电层201以及基板200。图案化半导体层203形成于第一绝缘层202上，图案化半导体层203包括对应栅极2011设置的有源层2031。第二图案化导电层204形成于图案化半导体层203上，第二图案化导电层204包括第二导电构件2041、源漏电极(2042，2043)以及导电垫2044，源漏电极(2042，2043)设置于有源层2031上。第二绝缘层205覆盖第二图案化导电层204、第一绝缘层202以及有源层2031且使导电垫2044显露。氧化铟锡层206形成于第二绝缘层205上。氧化铟锡层206通过第二绝缘层205上的第一过孔206a与第二导电构件2041连接，且通过第一绝缘层202和第二绝缘层205上连通的第二过孔206b与第一导电构件2012连接。\n\n[0042]图2所示背光模组是使用4个光罩制备得到，由于氧化铟锡层206电阻较大且容易老化，氧化铟锡层206桥接第一导电构件2012以及第二导电构件2041容易失效，导致绑定于导电垫2044上的发光元件点亮过程中出现死灯情况，严重影响良率。\n\n[0043]请参阅图3，其为本申请灯板的制造方法的流程示意图。灯板的制造方法包括如下步骤：\n\n[0044]S100：于基板上形成第一图案化导电层，第一图案化导电层包括设置于第一区域的栅极以及设置于第二区域的第一导电构件，基板具有相互间隔的第一区域、第二区域以及第三区域。\n\n[0045]具体地，提供一基板300，于基板300上形成整面的第一导电层，于第一导电层上形成整面的光阻层，利用第一光罩对光阻层进行曝光，经过显影液显影以及蚀刻第一导电层，于第一区域300a形成栅极3011，且于第二区域300b形成第一导电构件3012，如图4A所示。第一区域300a位于第二区域300b和第三区域300c之间，第一区域300a和第二区域300b之间具有间隔，第一区域300a和第三区域300c之间具有间隔。第一导电层的制备材料包括钼、铝、钛以及铜中的至少一种。\n\n[0046]S101：依次形成覆盖第一图案化导电层以及基板的第一绝缘层以及半导体层，采用第一半色调掩模板对第一绝缘层以及半导体层进行图案化，于第一绝缘层和半导体层上形成对应第一导电构件设置的过孔且形成图案化半导体层，图案化半导体层包括对应栅极设置的有源层。\n\n[0047]首先，采用化学气相沉积以形成覆盖第一图案化导电层以及基板的第一绝缘层302。第一绝缘层302为氮化硅层以及氧化硅层中的至少一种。\n\n[0048]接着，于第一绝缘层302形成半导体层，半导体层包括依次叠置于第一绝缘层302上的第一半导体层3031以及第二半导体层3032，第一半导体层3031为非晶硅(α-Si)层，第二半导体层3032为N掺杂非晶硅(N+α-Si)层。\n\n[0049]接着，于第二半导体层3032形成第一光阻层304，利用第一半色调掩模板对第一光阻层304进行曝光以定义出第一光阻去除区、第一光阻半保留区以及第一光阻完全保留区，第一光阻去除区对应第一导电构件3012，第一区域300a和第二区域300b之间的区域、第一区域300a和第三区域300c之间的区域对应第一光阻半保留区，第一区域300a、第二区域300b的部分区域以及第三区域300c对应第一光阻完全保留区。\n\n[0050]接着，用显影液对曝光后的第一光阻层304进行显影，去除第一光阻去除区的第一光阻层，如图4B所示。其中，显影液对第一光阻层304显影后，第一光阻半保留区的第一光阻层的厚度小于第一光阻完全保留区的第一光阻层的厚度。\n\n[0051]采用干法蚀刻去除第一光阻去除区的半导体层(3031，3032)以及第一绝缘层302以形成过孔300d；去除第一光阻半保留区的第一光阻层，干法蚀刻去除第一光阻半保留区的半导体层，去除第一光阻完全保留区的第一光阻层，形成图案化半导体层，如图4C所示，图案化半导体层包括有源层30311，有源层30311为位于第一区域300a的第一半导体层3031。\n\n[0052]S102：于过孔中、第一绝缘层上以及图案化半导体层上形成第二导电层，于第二导电层上形成第三导电层，采用第二半色调掩模板对第二导电层以及第三导电层进行图案化，形成第二图案化导电层且于第二导电构件上形成第三导电构件。\n\n[0053]首先，采用溅射沉积于过孔300d中、第一绝缘层上302以及图案化半导体层上形成第二导电层305，第二导电层305包括铜层；再采用溅射沉积于第二导电层305上形成第三导电层306，第三导电层306为氧化铟锡层。\n\n[0054]接着，于第三导电层306上形成第二光阻层307，利用第二半色调掩模板对第二光阻层307进行曝光以定义出第二光阻去除区、第二光阻半保留区以及第二光阻完全保留区；第一区域300a和第二区域300b之间、第一区域300a和第三区域300c之间的区域以及第一区域300a的部分区域对应第二光阻去除区，第一区域300a的部分区域以及第三区域300c对应第二光阻半保留区，第二区域300b对应第二光阻完全保留区，用显影液对曝光后的第二光阻层进行显影，第二光阻去除区的第二光阻层完全去除，第二光阻半保留区的第二光阻层的厚度小于第二光阻完全保留区的厚度，如图4D所示。\n\n[0055]采用湿法蚀刻去除第二光阻去除区的第三导电层306以及第二导电层305，如图4E所示；再采用干法蚀刻第一区域300a的部分区域的第二半导体层3032，以使有源层30311形成沟道，如图4F所示；去除第二光阻半保留区的第二光阻层，湿法蚀刻去除第二光阻半保留区的第三导电层306，如图4G所示；去除第二光阻完全保留区的光阻层，形成第二图案化导电层且于第二导电构件3051上形成第三导电构件3061，第二图案化导电层包括形成于第二区域300b的第二导电构件3051、形成于第一区域300a的源漏电极(3052，3053)以及形成于第三区域300c的导电垫3054，第二导电构件3051通过过孔300d与第一导电构件3012电性连接，源漏电极(3052，3053)设置于有源层30311上。\n\n[0056]S103：形成覆盖第一绝缘层、源漏电极、有源层且使第三导电构件以及导电垫显露的第二绝缘层。\n\n[0057]具体地，采用化学溅射沉积形成覆盖第一绝缘层302、第三导电构件3061、源漏电极(3052，3053)以及导电垫3054的第二绝缘层308，在第二绝缘层308形成光阻层，采用第二光罩对光阻层进行曝光以及显影液显影，干法蚀刻第二区域300b和第三区域300c的第二绝缘层308，以使第三导电构件3061以及导电垫3054显露。\n\n[0058]S104：将发光元件通过连接件绑定于导电垫上，得到灯板。\n\n[0059]具体地，连接件310的制备材料包括锡，发光元件309为次毫米发光二极管，将发光元件309用锡膏绑定于导电垫3054上，由于导电垫3054由铜制备得到，锡膏在铜上具有良好的附着力，使得发光元件309能牢固地固定于导电垫3054上，如图4H所示。由于第三导电构件3061形成第二导电构件3051上，能避免第三导电构件3061与第二导电构件3051之间电性连接失效，第二导电构件3051与第一导电构件3012通过过孔300d电性连接能保证两者之间电性连接良好。\n\n[0060]在此步骤中，还需要将覆晶薄膜(未示出)绑定于第三导电构件3061上。\n\n[0061]本申请灯板采用第一光罩、第二光罩、第一半色调掩模板以及第二半色调掩模板制备得到，提供一种新的4光罩(mask)制备灯板的方法。保证发光元件能牢固地固定于导电垫上的同时，第一导电构件、第二导电构件以及第三导电构件不会电性连接失效，保证发光元件能正常地发光。\n\n[0062]本申请还提供一种显示装置，显示装置包括灯板以及显示面板，显示面板位于灯板的出光侧，显示面板为液晶显示面板。灯板包括：\n\n[0063]于基板上形成的第一图案化导电层，第一图案化导电层包括栅极以及第一导电构件；\n\n[0064]依次覆盖第一图案化导电层的第一绝缘层以及图案化半导体层，第一绝缘层和图案化半导体层上设置有对应第一导电构件设置的过孔，图案化半导体层包括对应栅极设置的有源层；\n\n[0065]于图案化半导体层上形成的第二图案化导电层且于第二导电构件上形成第三导电构件，第二图案化导电层包括第二导电构件、源漏电极以及导电垫，第二导电构件通过过孔与第一导电构件电性连接，源漏电极设置于有源层上；\n\n[0066]覆盖第一绝缘层、源漏电极、有源层且使第三导电构件以及导电垫显露的第二绝缘层；\n\n[0067]通过连接件绑定于导电垫上的发光元件。\n\n[0068]在本实施例中，第三导电构件的制备材料包括氧化铟锡，第二图案化导电层的制备材料包括铜，连接件的制备材料包括锡。\n\n[0069]在本实施例中，第一绝缘层的制备材料选自氮化硅以及氧化硅中的至少一种，第二绝缘层的制备材料选自氮化硅以及氧化硅中的至少一种。\n\n[0070]在本实施例中，发光元件包括次毫米发光二极管以及微型发光二极管中的至少一种。\n\n[0071]本申请显示装置的灯板的第三导电构件形成于第二导电构件上能避免第二导电构件氧化，避免第二导电构件、第三导电构件以及第一导电构件电性连接失效的问题，保证发光元件能正常的发光，使得灯板能发出均匀的光。\n\n[0072]以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10879, 23933, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种Micro LED转移装置及转移方法、显示面板。\n\n背景技术\n\n[0002]微型发光二极管(Micro Light Emitting Diode，Micro LED)因其具有高亮度、高对比度、高解析度、高色域及广视角等特性，成为显示技术领域的研究重点。但如何将微型发光二极管按需转移至阵列基板的对应像素上成为发展微型发光二极管技术的难点。目前一般采用巨量转移技术实现微型二极管的转移，但即使是采用巨量转移技术中较成熟的弹性印模(Stamp)转移技术，也存在着技术缺陷，如在采用异方性导电胶或者其他邦定材料技术的时候，会出现局部的力失衡，达不到精确地转移效果。\n\n发明内容\n\n[0003]本申请实施例提供一种Micro LED转移装置及转移方法、显示面板，可以改善转移Micro LED过程中出现局部力失衡导致转移效果不佳，影响产品良率的问题。\n\n[0004]本申请实施例提供一种Micro LED转移装置，包括：打印装置，所述打印装置包括：\n\n[0005]基板，所述基板用于吸附Micro LED；以及，\n\n[0006]位于所述基板表面的释放层，所述释放层用于在设定的湿度条件下分离所述基板及所述Micro LED。\n\n[0007]在一些实施例中，所述释放层包括水汽敏感性高分子材料。\n\n[0008]在一些实施例中，所述水汽敏感性高分子材料包括溶剂以及分散于所述溶剂中的水溶性高分子化合物和反应物。\n\n[0009]在一些实施例中，所述水溶性高分子化合物包括聚吡咯烷酮、聚乙烯吡咯烷酮中的至少一种，所述反应物包括柠檬酸、己二酸中的至少一种与碳酸氢钠的组合；所述溶剂包括二氯甲烷及乙醇。\n\n[0010]在一些实施例中，所述水溶性高分子化合物与所述反应物的质量比为10：1～1：1。\n\n[0011]在一些实施例中，所述二氯甲烷的质量百分比为0.5％～1％，所述乙醇的质量百分比为小于或等于5％。\n\n[0012]在一些实施例中，所述基板包括基底以及位于所述基底靠近所述释放层一侧的弹性体。\n\n[0013]在一些实施例中，所述设定的湿度条件为湿度大于50％。\n\n[0014]本申请还提供一种Micro LED转移方法，采用所述的Micro LED转移装置，包括以下步骤：\n\n[0015]S10：提供一承载基板及目标基板；其中，所述承载基板表面形成有多个待转移的所述Micro LED，所述目标基板上设置有待放置所述Micro LED的目标位置；\n\n[0016]S20：利用所述打印装置拾取所述Micro LED；\n\n[0017]S30：将所述Micro LED放置在所述目标基板的所述目标位置处，并对所述打印装置进行水汽处理，以分离所述Micro LED与所述基板。\n\n[0018]本申请还提供一种显示面板，包括：\n\n[0019]目标基板，所述目标基板包括采用所述Micro LED转移装置转移得到的多个MicroLED或采用Micro LED转移方法转移得到的多个Micro LED。\n\n[0020]本申请实施例提供的Micro LED转移装置及转移方法、显示面板，所述Micro LED转移装置包括：打印装置；所述打印装置包括：基板，所述基板用于吸附Micro LED；以及位于所述基板表面的释放层，所述释放层用于在设定的湿度条件下分离所述基板及所述Micro LED，以改善转移Micro LED过程中出现局部力失衡导致转移效果不佳，影响产品良率的问题，提高Micro LED的转移精度及产品良率。\n\n附图说明\n\n[0021]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0022]图1A～图1C为本申请的实施例提供的Micro LED转移装置的结构示意图；\n\n[0023]图2A为图1B中A处的局部放大图；\n\n[0024]图2B为本申请的实施例提供的打印装置的俯视图；\n\n[0025]图3A～图3B为本申请的实施例提供的承载基板的结构示意图；\n\n[0026]图3C～图3D为本申请的实施例提供的目标基板的结构示意图；\n\n[0027]图4A为本申请的实施例提供的Micro LED转移方法的流程示意图\n\n[0028]图4B～图4G为采用图4A所示的转移方法转移Micro LED的过程示意图；\n\n[0029]图5为本申请的实施例提供的显示面板的结构示意图。\n\n具体实施方式\n\n[0030]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0031]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0032]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0033]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0034]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0035]具体的，请参阅图1A～图1C，其为本申请的实施例提供的Micro LED转移装置的结构示意图；如图2A所示，其为图1B中A处的局部放大图；如图2B所示，其为本申请的实施例提供的打印装置的俯视图。\n\n[0036]本申请实施例提供一种Micro LED转移装置，包括：打印装置100，所述打印装置100包括：\n\n[0037]基板101，所述基板101用于吸附Micro LED 200；以及，\n\n[0038]位于所述基板101表面的释放层102，所述释放层102用于在设定的湿度条件下分离所述基板101及所述Micro LED 200，提高所述Micro LED 200的转移精度及产品良率。\n\n[0039]具体的，所述释放层102包括水汽敏感性高分子材料1021。\n\n[0040]进一步地，所述水汽敏感性高分子材料1021包括溶剂以及分散于所述溶剂中的水溶性高分子化合物和反应物。\n\n[0041]具体的，所述水溶性高分子化合物包括聚吡咯烷酮、聚乙烯吡咯烷酮中的至少一种，所述反应物包括柠檬酸、己二酸中的至少一种与碳酸氢钠的组合；所述溶剂包括二氯甲烷及乙醇。\n\n[0042]其中，所述水溶性高分子化合物与所述反应物的质量比为10：1～1：1；所述二氯甲烷的质量百分比为0.5％～1％，所述乙醇的质量百分比为小于或等于5％。\n\n[0043]以所述反应物为柠檬酸与碳酸氢钠的组合为例，当所述释放层102处于设定的所述湿度条件的环境中时，所述释放层102中的所述反应物遇水发生反应，即所述释放层102中的柠檬酸与碳酸氢钠遇水后发生化学反应，反应机制为：C6H8O7(aq)+3NaHCO3(aq)→Na3C6H5O7(aq)+3H2O(l)+3CO2(g)；反应得到的生成物为柠檬酸钠、水和二氧化碳；加之在所述设定的湿度条件下，所述释放层102中的所述水溶性高分子化合物溶于水，均使得所述基板101与所述Micro LED 200之间的结合力得以降低，从而使得所述基板101与所述MicroLED 200之间易分离，能够改善转移Micro LED过程中出现局部力失衡导致转移效果不佳，影响产品良率的问题。\n\n[0044]其中，所述设定的湿度条件为湿度大于50％；具体的，可根据湿度检测装置检测所述设定的湿度条件是否已达到湿度大于50％的要求；所述湿度检测装置包括湿度计或湿度传感器等。\n\n[0045]进一步地，所述基板101包括基底1011与弹性体1012，所述弹性体1012位于所述基底1011靠近所述释放层102的一侧。\n\n[0046]所述弹性体1012可为整面结构，如图1A所示；但由于承载基板400表面的所述Micro LED 200的密度要大于目标基板500上所需设置的所述Micro LED 200的个数，如图3A～图3D所示；所以，为提高对所述Micro LED 200的选择性，所述弹性体1012也可为图案化结构，如图1B所示，即为所述弹性体1012为凹凸结构的结构示意图。\n\n[0047]其中，如图3A～图3B所示，其为本申请的实施例提供的承载基板的结构示意图；如图3C～图3D所示，其为本申请的实施例提供的目标基板的结构示意图；所述承载基板400表面形成有多个待转移的所述Micro LED 200。\n\n[0048]此外，所述承载基板100表面的多个待转移的所述Micro LED 200的颜色可以相同，亦可不同；若所述承载基板100表面的多个待转移的所述Micro LED200的颜色不同，如多个待转移的所述Micro LED 200中包括按行或列排布的红色Micro LED 201、与所述红色Micro LED 201相邻设置的绿色Micro LED202以及与所述绿色Micro LED 202相邻设置的蓝色Micro LED 203等，如图3B所示；则将所述弹性体1012设置为图案化结构也可实现对某一颜色的所述Micro LED的拾取，所述转移装置100通过对不同颜色Micro LED 200进行拾取转移后得到如图3D所示的目标基板500。所述弹性体1012设置为图案化结构不仅限于凹凸结构，本领域的相关技术人员可根据实际需求设计成其他结构，在此对其不再进行赘述。\n\n[0049]请继续参阅图1A～图1C和图2A～图2B，所述基底1011的制备材料包括硅片；所述弹性体1012的制备材料包括有机硅；具体的，所述弹性体1012为聚二甲基硅烷。\n\n[0050]由于所述释放层102中包含二氯甲烷，则所述释放层102与所述弹性体1012之间发生反应，使得所述弹性体1012靠近所述释放层102一侧的表面发生溶解，所述弹性体1012表面形成微蚀刻的粗糙表面，所述水汽敏感性高分子材料1021将位于所述弹性体1012的粗糙表面的孔洞或凹陷内，如图2B所示；如此便不会影响所述弹性体1012与所述Micro LED 200之间的结合力，保证所述打印装置100可以从所述承载基板400上拾取所述Micro LED 200。\n\n[0051]所述释放层102可采用喷涂或喷墨打印等工艺形成于所述弹性体1012表面；所述释放层102的膜层厚度为大于或等于30nm且小于或等于300nm；进一步地，所述释放层102的膜层厚度为大于或等于50nm且小于或等于200nm。\n\n[0052]所述释放层102与所述弹性体1012之间发生反应形成的所述孔洞或凹陷由所述释放层102中所述水汽敏感性高分子材料1021的用量及形成所述释放层102的制备工艺控制，以保证所述孔洞的孔径或所述凹陷的深度相对于整个所述弹性体1012表面或所述弹性体1012中的凸起表面较小，避免影响所述弹性体1012从所述承载基板400上拾取所述MicroLED 200。\n\n[0053]在如图2A所示的局部放大图中，仅以所述Micro LED 200为横向结构为例进行说明，即所述Micro LED 200的两个电极201和202位于同侧；本领域的相关技术人员亦可将所述Micro LED 200为横向结构变更为垂直结构，即所述Micro LED 200的两个电极201和202位于异侧，在此对其不再进行赘述。\n\n[0054]请继续参阅图1A～图1C和图3A～图3D，所述Micro LED转移装置还包括控制器300，所述控制器300用于控制所述打印装置100将所述Micro LED 200从所述承载基板400移动到所述目标基板500上待放置所述Micro LED的目标位置501处，从而实现所述MicroLED的精确转移。\n\n[0055]进一步地，所述Micro LED转移装置还包括定位装置等未示出部分，所述定位装置用于检测所述打印装置100的位置；或用于检测所述打印装置100相对于承载基板400的相对位置；或检测所述打印装置100相对于所述目标基板500的相对位置；所述打印装置100根据所述定位装置的检测结果利用所述控制器300的控制将所述打印装置100与所述承载基板400进行对准，以吸附多个所述Micro LED 200；或将所述打印装置100吸附的多个所述Micro LED 200与所述目标基板500上待放置所述Micro LED的所述目标位置处进行对准，保证所述Micro LED的精确转移。所述定位装置可包括电荷耦合相机。\n\n[0056]此外，所述定位装置还可通过对位标记1013实现所述打印装置100与所述目标基板或所述承载基板的对准。具体地，如图1C所示，所述基板101的边缘区域设置有所述对位标记1013，在俯视视角下，所述对位标记1013为圆形、T形、矩形、凹槽、凸台等结构；与之相应的，所述承载基板400与所述目标基板500上亦设置有与所述对位标记1013对应的定位标记1014；所述定位标记1014为圆形、T形、矩形、凹槽、凸台等形状或结构，如图3B和图3D所示。其中，所述对位标记1013与所述定位标记的形状和大小可以保持相同也可不同，本领域的相关技术人员可根据实际需求进行设定，在此对其不再进行赘述。\n\n[0057]进一步地，所述对位标记1013还包括第一对位标记、第二对位标记、第三对位标记，所述第一对位标记、所述第二对位标记与所述第三对位标记的形状不同；与之相应的，所述定位标记10114还包括第一定位标记1014a、第二定位标记1014b、第三定位标记1014c，所述第一定位标记1014a、所述第二定位标记1014b与所述第三定位标记1014c的形状不同。其中，所述第一对位标记、所述第二对位标记、所述第三对位标记与所述第一定位标记1014a、所述第二定位标记1014b、所述第三定位标记1014c用于实现对不同颜色的所述Micro LED的转移定位。如所述第一对位标记与所述第一定位标记1014a用于实现对红色Micro LED的转移定位；所述第二对位标记与所述第二定位标记1014b用于实现对绿色Micro LED的转移定位等。\n\n[0058]其中，所述对位标记1013可与所述弹性体1012的图案化制程同步形成，以减少制程工序。\n\n[0059]请参阅图4A，其为本申请的实施例提供的Micro LED转移方法的流程示意图；如图4B～图4G所示，其为采用图4A所示的转移方法转移Micro LED的过程示意图。本申请还提供一种Micro LED转移方法，采用所述的Micro LED转移装置，包括以下步骤：\n\n[0060]S10：提供一承载基板400及目标基板500；其中，所述承载基板400表面形成有多个待转移的所述Micro LED 200，所述目标基板500上设置有待放置所述Micro LED 200的目标位置501，如图4B～图4C所示；\n\n[0061]S20：利用所述打印装置100拾取所述Micro LED 200，如图4D～图4E所示；\n\n[0062]S30：将所述Micro LED 200放置在所述目标基板500的所述目标位置501处，并对所述打印装置100进行水汽处理，以分离所述Micro LED 200与所述基板101，以完成所述Micro LED 200的转移，如图4F～图4G所示。\n\n[0063]其中，在所述步骤S30中，可通入水蒸气或将所述打印装置100及所述目标基板500整体移入固定湿度机构中，以对所述打印装置100实现所述水汽处理。\n\n[0064]在对所述打印装置100进行所述水汽处理时，需使所述打印装置100所处环境的湿度为设定的湿度条件；具体的，所述设定的湿度条件为湿度大于50％。可根据湿度检测装置检测所述设定的湿度条件是否已达到湿度大于50％的要求；所述湿度检测装置包括湿度计或湿度传感器等。\n\n[0065]在水汽处理过程中，所述释放层102与水汽发生反应，产生大量气体，从而使得所述基板101与所述Micro LED 200分离，完成对所述Micro LED 200的转移。\n\n[0066]所述水汽处理过程中，所述释放层102与水汽发生反应的速度较快，远小于所述Micro LED 200湿度耐受和信赖性测试的条件，所以所述水汽处理对所述Micro LED 200的影响较小。此外，在后续的制程中，还包括封装及保护制程，因此，可以实现对所述目标基板500及所述Micro LED 200的保护。\n\n[0067]请参阅图5，其为本申请的实施例提供的显示面板的结构示意图；本申请还提供一种显示面板，包括：\n\n[0068]目标基板500，所述目标基板500包括，采用所述Micro LED转移装置转移得到的多个Micro LED 200或采用Micro LED转移方法转移得到的多个所述Micro LED。\n\n[0069]其中，所述目标基板500还包括控制线路层及缓冲层等未示出部分，所述控制线路层包括晶体管及控制线路，所述控制线路层用于控制所述Micro LED200进行发光，以实现所述显示面板的显示。\n\n[0070]所述显示面板还包括位于所述Micro LED 200远离所述目标基板500一侧的封装层502，所述封装层502用于保护所述Micro LED 200免受水氧侵蚀。\n\n[0071]进一步地，所述显示面板还包括圆偏光片等未示出部分，以增加所述显示面板的视角。\n\n[0072]进一步地，所述显示面板还包括色转换膜或彩色滤光片等未示出部分，以提高所述显示面板的对比度及显示色纯度。\n\n[0073]进一步地，所述显示面板还包括触控面板，所述触控面板以内置式或外挂式的方式设置于所述显示面板中，以实现所述显示面板的触控功能。\n\n[0074]进一步地，所述显示面板还包括传感器，所述传感器包括距离传感器、重力传感器、光传感器等，以实现所述显示面板的指纹识别、面部识别和/或距离感知等功能。\n\n[0075]本申请实施例提供的Micro LED转移装置及转移方法、显示面板，所述Micro LED转移装置包括：打印装置100；所述打印装置100包括：基板101，所述基板101用于吸附MicroLED 200；以及位于所述基板101表面的释放层102，所述释放层102用于在设定的湿度条件下分离所述基板101及所述Micro LED 200，以改善转移Micro LED过程中出现局部力失衡导致转移效果不佳，影响产品良率的问题，提高Micro LED的转移精度及产品良率。\n\n[0076]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0077]以上对本申请实施例所提供的Micro LED转移装置及转移方法、显示面板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种Micro LED转移装置及转移方法、显示面板。\n\n背景技术\n\n[0002]微型发光二极管(Micro Light Emitting Diode，Micro LED)因其具有高亮度、高对比度、高解析度、高色域及广视角等特性，成为显示技术领域的研究重点。但如何将微型发光二极管按需转移至阵列基板的对应像素上成为发展微型发光二极管技术的难点。目前一般采用巨量转移技术实现微型二极管的转移，但即使是采用巨量转移技术中较成熟的弹性印模(Stamp)转移技术，也存在着技术缺陷，如在采用异方性导电胶或者其他邦定材料技术的时候，会出现局部的力失衡，达不到精确地转移效果。\n\n发明内容\n\n[0003]本申请实施例提供一种Micro LED转移装置及转移方法、显示面板，可以改善转移Micro LED过程中出现局部力失衡导致转移效果不佳，影响产品良率的问题。\n\n[0004]本申请实施例提供一种Micro LED转移装置，包括：打印装置，所述打印装置包括：\n\n[0005]基板，所述基板用于吸附Micro LED；以及，\n\n[0006]位于所述基板表面的释放层，所述释放层用于在设定的湿度条件下分离所述基板及所述Micro LED。\n\n[0007]在一些实施例中，所述释放层包括水汽敏感性高分子材料。\n\n[0008]在一些实施例中，所述水汽敏感性高分子材料包括溶剂以及分散于所述溶剂中的水溶性高分子化合物和反应物。\n\n[0009]在一些实施例中，所述水溶性高分子化合物包括聚吡咯烷酮、聚乙烯吡咯烷酮中的至少一种，所述反应物包括柠檬酸、己二酸中的至少一种与碳酸氢钠的组合；所述溶剂包括二氯甲烷及乙醇。\n\n[0010]在一些实施例中，所述水溶性高分子化合物与所述反应物的质量比为10：1～1：1。\n\n[0011]在一些实施例中，所述二氯甲烷的质量百分比为0.5％～1％，所述乙醇的质量百分比为小于或等于5％。\n\n[0012]在一些实施例中，所述基板包括基底以及位于所述基底靠近所述释放层一侧的弹性体。\n\n[0013]在一些实施例中，所述设定的湿度条件为湿度大于50％。\n\n[0014]本申请还提供一种Micro LED转移方法，采用所述的Micro LED转移装置，包括以下步骤：\n\n[0015]S10：提供一承载基板及目标基板；其中，所述承载基板表面形成有多个待转移的所述Micro LED，所述目标基板上设置有待放置所述Micro LED的目标位置；\n\n[0016]S20：利用所述打印装置拾取所述Micro LED；\n\n[0017]S30：将所述Micro LED放置在所述目标基板的所述目标位置处，并对所述打印装置进行水汽处理，以分离所述Micro LED与所述基板。\n\n[0018]本申请还提供一种显示面板，包括：\n\n[0019]目标基板，所述目标基板包括采用所述Micro LED转移装置转移得到的多个MicroLED或采用Micro LED转移方法转移得到的多个Micro LED。\n\n[0020]本申请实施例提供的Micro LED转移装置及转移方法、显示面板，所述Micro LED转移装置包括：打印装置；所述打印装置包括：基板，所述基板用于吸附Micro LED；以及位于所述基板表面的释放层，所述释放层用于在设定的湿度条件下分离所述基板及所述Micro LED，以改善转移Micro LED过程中出现局部力失衡导致转移效果不佳，影响产品良率的问题，提高Micro LED的转移精度及产品良率。\n\n附图说明\n\n[0021]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0022]图1A～图1C为本申请的实施例提供的Micro LED转移装置的结构示意图；\n\n[0023]图2A为图1B中A处的局部放大图；\n\n[0024]图2B为本申请的实施例提供的打印装置的俯视图；\n\n[0025]图3A～图3B为本申请的实施例提供的承载基板的结构示意图；\n\n[0026]图3C～图3D为本申请的实施例提供的目标基板的结构示意图；\n\n[0027]图4A为本申请的实施例提供的Micro LED转移方法的流程示意图\n\n[0028]图4B～图4G为采用图4A所示的转移方法转移Micro LED的过程示意图；\n\n[0029]图5为本申请的实施例提供的显示面板的结构示意图。\n\n具体实施方式\n\n[0030]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0031]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0032]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0033]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0034]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0035]具体的，请参阅图1A～图1C，其为本申请的实施例提供的Micro LED转移装置的结构示意图；如图2A所示，其为图1B中A处的局部放大图；如图2B所示，其为本申请的实施例提供的打印装置的俯视图。\n\n[0036]本申请实施例提供一种Micro LED转移装置，包括：打印装置100，所述打印装置100包括：\n\n[0037]基板101，所述基板101用于吸附Micro LED 200；以及，\n\n[0038]位于所述基板101表面的释放层102，所述释放层102用于在设定的湿度条件下分离所述基板101及所述Micro LED 200，提高所述Micro LED 200的转移精度及产品良率。\n\n[0039]具体的，所述释放层102包括水汽敏感性高分子材料1021。\n\n[0040]进一步地，所述水汽敏感性高分子材料1021包括溶剂以及分散于所述溶剂中的水溶性高分子化合物和反应物。\n\n[0041]具体的，所述水溶性高分子化合物包括聚吡咯烷酮、聚乙烯吡咯烷酮中的至少一种，所述反应物包括柠檬酸、己二酸中的至少一种与碳酸氢钠的组合；所述溶剂包括二氯甲烷及乙醇。\n\n[0042]其中，所述水溶性高分子化合物与所述反应物的质量比为10：1～1：1；所述二氯甲烷的质量百分比为0.5％～1％，所述乙醇的质量百分比为小于或等于5％。\n\n[0043]以所述反应物为柠檬酸与碳酸氢钠的组合为例，当所述释放层102处于设定的所述湿度条件的环境中时，所述释放层102中的所述反应物遇水发生反应，即所述释放层102中的柠檬酸与碳酸氢钠遇水后发生化学反应，反应机制为：C6H8O7(aq)+3NaHCO3(aq)→Na3C6H5O7(aq)+3H2O(l)+3CO2(g)；反应得到的生成物为柠檬酸钠、水和二氧化碳；加之在所述设定的湿度条件下，所述释放层102中的所述水溶性高分子化合物溶于水，均使得所述基板101与所述Micro LED 200之间的结合力得以降低，从而使得所述基板101与所述MicroLED 200之间易分离，能够改善转移Micro LED过程中出现局部力失衡导致转移效果不佳，影响产品良率的问题。\n\n[0044]其中，所述设定的湿度条件为湿度大于50％；具体的，可根据湿度检测装置检测所述设定的湿度条件是否已达到湿度大于50％的要求；所述湿度检测装置包括湿度计或湿度传感器等。\n\n[0045]进一步地，所述基板101包括基底1011与弹性体1012，所述弹性体1012位于所述基底1011靠近所述释放层102的一侧。\n\n[0046]所述弹性体1012可为整面结构，如图1A所示；但由于承载基板400表面的所述Micro LED 200的密度要大于目标基板500上所需设置的所述Micro LED 200的个数，如图3A～图3D所示；所以，为提高对所述Micro LED 200的选择性，所述弹性体1012也可为图案化结构，如图1B所示，即为所述弹性体1012为凹凸结构的结构示意图。\n\n[0047]其中，如图3A～图3B所示，其为本申请的实施例提供的承载基板的结构示意图；如图3C～图3D所示，其为本申请的实施例提供的目标基板的结构示意图；所述承载基板400表面形成有多个待转移的所述Micro LED 200。\n\n[0048]此外，所述承载基板100表面的多个待转移的所述Micro LED 200的颜色可以相同，亦可不同；若所述承载基板100表面的多个待转移的所述Micro LED200的颜色不同，如多个待转移的所述Micro LED 200中包括按行或列排布的红色Micro LED 201、与所述红色Micro LED 201相邻设置的绿色Micro LED202以及与所述绿色Micro LED 202相邻设置的蓝色Micro LED 203等，如图3B所示；则将所述弹性体1012设置为图案化结构也可实现对某一颜色的所述Micro LED的拾取，所述转移装置100通过对不同颜色Micro LED 200进行拾取转移后得到如图3D所示的目标基板500。所述弹性体1012设置为图案化结构不仅限于凹凸结构，本领域的相关技术人员可根据实际需求设计成其他结构，在此对其不再进行赘述。\n\n[0049]请继续参阅图1A～图1C和图2A～图2B，所述基底1011的制备材料包括硅片；所述弹性体1012的制备材料包括有机硅；具体的，所述弹性体1012为聚二甲基硅烷。\n\n[0050]由于所述释放层102中包含二氯甲烷，则所述释放层102与所述弹性体1012之间发生反应，使得所述弹性体1012靠近所述释放层102一侧的表面发生溶解，所述弹性体1012表面形成微蚀刻的粗糙表面，所述水汽敏感性高分子材料1021将位于所述弹性体1012的粗糙表面的孔洞或凹陷内，如图2B所示；如此便不会影响所述弹性体1012与所述Micro LED 200之间的结合力，保证所述打印装置100可以从所述承载基板400上拾取所述Micro LED 200。\n\n[0051]所述释放层102可采用喷涂或喷墨打印等工艺形成于所述弹性体1012表面；所述释放层102的膜层厚度为大于或等于30nm且小于或等于300nm；进一步地，所述释放层102的膜层厚度为大于或等于50nm且小于或等于200nm。\n\n[0052]所述释放层102与所述弹性体1012之间发生反应形成的所述孔洞或凹陷由所述释放层102中所述水汽敏感性高分子材料1021的用量及形成所述释放层102的制备工艺控制，以保证所述孔洞的孔径或所述凹陷的深度相对于整个所述弹性体1012表面或所述弹性体1012中的凸起表面较小，避免影响所述弹性体1012从所述承载基板400上拾取所述MicroLED 200。\n\n[0053]在如图2A所示的局部放大图中，仅以所述Micro LED 200为横向结构为例进行说明，即所述Micro LED 200的两个电极201和202位于同侧；本领域的相关技术人员亦可将所述Micro LED 200为横向结构变更为垂直结构，即所述Micro LED 200的两个电极201和202位于异侧，在此对其不再进行赘述。\n\n[0054]请继续参阅图1A～图1C和图3A～图3D，所述Micro LED转移装置还包括控制器300，所述控制器300用于控制所述打印装置100将所述Micro LED 200从所述承载基板400移动到所述目标基板500上待放置所述Micro LED的目标位置501处，从而实现所述MicroLED的精确转移。\n\n[0055]进一步地，所述Micro LED转移装置还包括定位装置等未示出部分，所述定位装置用于检测所述打印装置100的位置；或用于检测所述打印装置100相对于承载基板400的相对位置；或检测所述打印装置100相对于所述目标基板500的相对位置；所述打印装置100根据所述定位装置的检测结果利用所述控制器300的控制将所述打印装置100与所述承载基板400进行对准，以吸附多个所述Micro LED 200；或将所述打印装置100吸附的多个所述Micro LED 200与所述目标基板500上待放置所述Micro LED的所述目标位置处进行对准，保证所述Micro LED的精确转移。所述定位装置可包括电荷耦合相机。\n\n[0056]此外，所述定位装置还可通过对位标记1013实现所述打印装置100与所述目标基板或所述承载基板的对准。具体地，如图1C所示，所述基板101的边缘区域设置有所述对位标记1013，在俯视视角下，所述对位标记1013为圆形、T形、矩形、凹槽、凸台等结构；与之相应的，所述承载基板400与所述目标基板500上亦设置有与所述对位标记1013对应的定位标记1014；所述定位标记1014为圆形、T形、矩形、凹槽、凸台等形状或结构，如图3B和图3D所示。其中，所述对位标记1013与所述定位标记的形状和大小可以保持相同也可不同，本领域的相关技术人员可根据实际需求进行设定，在此对其不再进行赘述。\n\n[0057]进一步地，所述对位标记1013还包括第一对位标记、第二对位标记、第三对位标记，所述第一对位标记、所述第二对位标记与所述第三对位标记的形状不同；与之相应的，所述定位标记10114还包括第一定位标记1014a、第二定位标记1014b、第三定位标记1014c，所述第一定位标记1014a、所述第二定位标记1014b与所述第三定位标记1014c的形状不同。其中，所述第一对位标记、所述第二对位标记、所述第三对位标记与所述第一定位标记1014a、所述第二定位标记1014b、所述第三定位标记1014c用于实现对不同颜色的所述Micro LED的转移定位。如所述第一对位标记与所述第一定位标记1014a用于实现对红色Micro LED的转移定位；所述第二对位标记与所述第二定位标记1014b用于实现对绿色Micro LED的转移定位等。\n\n[0058]其中，所述对位标记1013可与所述弹性体1012的图案化制程同步形成，以减少制程工序。\n\n[0059]请参阅图4A，其为本申请的实施例提供的Micro LED转移方法的流程示意图；如图4B～图4G所示，其为采用图4A所示的转移方法转移Micro LED的过程示意图。本申请还提供一种Micro LED转移方法，采用所述的Micro LED转移装置，包括以下步骤：\n\n[0060]S10：提供一承载基板400及目标基板500；其中，所述承载基板400表面形成有多个待转移的所述Micro LED 200，所述目标基板500上设置有待放置所述Micro LED 200的目标位置501，如图4B～图4C所示；\n\n[0061]S20：利用所述打印装置100拾取所述Micro LED 200，如图4D～图4E所示；\n\n[0062]S30：将所述Micro LED 200放置在所述目标基板500的所述目标位置501处，并对所述打印装置100进行水汽处理，以分离所述Micro LED 200与所述基板101，以完成所述Micro LED 200的转移，如图4F～图4G所示。\n\n[0063]其中，在所述步骤S30中，可通入水蒸气或将所述打印装置100及所述目标基板500整体移入固定湿度机构中，以对所述打印装置100实现所述水汽处理。\n\n[0064]在对所述打印装置100进行所述水汽处理时，需使所述打印装置100所处环境的湿度为设定的湿度条件；具体的，所述设定的湿度条件为湿度大于50％。可根据湿度检测装置检测所述设定的湿度条件是否已达到湿度大于50％的要求；所述湿度检测装置包括湿度计或湿度传感器等。\n\n[0065]在水汽处理过程中，所述释放层102与水汽发生反应，产生大量气体，从而使得所述基板101与所述Micro LED 200分离，完成对所述Micro LED 200的转移。\n\n[0066]所述水汽处理过程中，所述释放层102与水汽发生反应的速度较快，远小于所述Micro LED 200湿度耐受和信赖性测试的条件，所以所述水汽处理对所述Micro LED 200的影响较小。此外，在后续的制程中，还包括封装及保护制程，因此，可以实现对所述目标基板500及所述Micro LED 200的保护。\n\n[0067]请参阅图5，其为本申请的实施例提供的显示面板的结构示意图；本申请还提供一种显示面板，包括：\n\n[0068]目标基板500，所述目标基板500包括，采用所述Micro LED转移装置转移得到的多个Micro LED 200或采用Micro LED转移方法转移得到的多个所述Micro LED。\n\n[0069]其中，所述目标基板500还包括控制线路层及缓冲层等未示出部分，所述控制线路层包括晶体管及控制线路，所述控制线路层用于控制所述Micro LED200进行发光，以实现所述显示面板的显示。\n\n[0070]所述显示面板还包括位于所述Micro LED 200远离所述目标基板500一侧的封装层502，所述封装层502用于保护所述Micro LED 200免受水氧侵蚀。\n\n[0071]进一步地，所述显示面板还包括圆偏光片等未示出部分，以增加所述显示面板的视角。\n\n[0072]进一步地，所述显示面板还包括色转换膜或彩色滤光片等未示出部分，以提高所述显示面板的对比度及显示色纯度。\n\n[0073]进一步地，所述显示面板还包括触控面板，所述触控面板以内置式或外挂式的方式设置于所述显示面板中，以实现所述显示面板的触控功能。\n\n[0074]进一步地，所述显示面板还包括传感器，所述传感器包括距离传感器、重力传感器、光传感器等，以实现所述显示面板的指纹识别、面部识别和/或距离感知等功能。\n\n[0075]本申请实施例提供的Micro LED转移装置及转移方法、显示面板，所述Micro LED转移装置包括：打印装置100；所述打印装置100包括：基板101，所述基板101用于吸附MicroLED 200；以及位于所述基板101表面的释放层102，所述释放层102用于在设定的湿度条件下分离所述基板101及所述Micro LED 200，以改善转移Micro LED过程中出现局部力失衡导致转移效果不佳，影响产品良率的问题，提高Micro LED的转移精度及产品良率。\n\n[0076]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0077]以上对本申请实施例所提供的Micro LED转移装置及转移方法、显示面板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10880, 23934, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种QD-miniLED发光器件制作方法及QD-miniLED发光器件。\n\n背景技术\n\n[0002]近年来，量子点显示技术受到了光电领域研究者的广泛关注。相对传统的荧光粉而言，量子点具有发光波长可调、半峰宽较窄、荧光量子效率高、可溶液加工等优势，因此，能够得到高色域高品质的显示画面。特别地，可以将量子点与miniLED相结合，从而发展出QD-miniLED新型显示技术。\n\n[0003]一般而言，QD-miniLED显示技术以蓝光miniLED作为背光，利用高能量的蓝光激发红或绿量子点产生相应的红光或绿光，从而实现色转换。这种显示技术相对红、绿、蓝三色miniLED直显技术而言，只需要蓝色miniLED芯片，再结合量子点色转换层，就可以实现全彩化，因此，其工艺和成本可能会相对较低。在开发QD-miniLED显示技术时，由于miniLED芯片的衬底较厚，故容易出现光串扰问题。\n\n发明内容\n\n[0004]本申请提供一种QD-miniLED发光器件制作方法及QD-miniLED发光器件，可以避免遮光材料层残留在miniLED单体的上表面，从而可以避免出现光串扰问题，可以提高产品质量，提高产品良率。\n\n[0005]第一方面，本申请实施例提供了一种QD-miniLED发光器件制作方法，包括以下步骤：\n\n[0006]对多个第一miniLED单体的表面进行超疏水化处理，得到多个第二miniLED单体；\n\n[0007]将所述多个第二miniLED单体转移到TFT阵列基板上，所述多个第二miniLED单体在所述TFT阵列基板上间隔分布；\n\n[0008]在所述TFT阵列基板上的多个第二miniLED单体的间隙内填充遮光材料层；\n\n[0009]将所述TFT阵列基板与设置有像素化的量子点基板对组贴合，得到QD-miniLED发光器件。\n\n[0010]在本申请实施例所述的QD-miniLED发光器件制作方法中，所述对多个第一miniLED单体的表面进行超疏水化处理的步骤，包括：\n\n[0011]对多个第一miniLED单体的表面进行粗糙化处理。\n\n[0012]在本申请实施例所述的QD-miniLED发光器件制作方法中，所述对多个第一miniLED单体的表面进行粗糙化处理的步骤，包括：\n\n[0013]在所述多个第一miniLED单体的表面制作一层具有微纳结构的涂层。\n\n[0014]在本申请实施例所述的QD-miniLED发光器件制作方法中，所述在所述多个第一miniLED单体的表面制作一层具有微纳结构的涂层的步骤，包括：\n\n[0015]采用化学气相沉淀法在所述多个第一miniLED单体的表面沉积一层具有微纳结构的涂层。\n\n[0016]在本申请实施例所述的QD-miniLED发光器件制作方法中，所述涂层为二氧化硅涂层或者氮化硅涂层。\n\n[0017]在本申请实施例所述的QD-miniLED发光器件制作方法中，所述对多个第一miniLED单体的表面进行超疏水化处理的步骤，包括：\n\n[0018]对多个第一miniLED单体的表面进行降低表面能处理。\n\n[0019]在本申请实施例所述的QD-miniLED发光器件制作方法中，所述对多个第一miniLED单体的表面进行降低表面能处理的步骤，包括：\n\n[0020]在多个第一miniLED单体的表面涂布表面能低于第一预设值的涂层。\n\n[0021]在本申请实施例所述的QD-miniLED发光器件制作方法中，所述在多个第一miniLED单体的表面涂布表面能低于预设值的涂层的步骤包括：\n\n[0022]将氟化剂加入到透光度大于第二预设值的无机物溶液或者有机高分子溶液中进行混合，得到混合后的氟化剂溶液；\n\n[0023]将所述氟化剂溶液涂布到所述多个第一miniLED单体的表面，以在所述多个第一miniLED单体的表面形成表面能低于预设值的涂层。\n\n[0024]在本申请实施例所述的QD-miniLED发光器件制作方法中，所述遮光材料层为黑胶或者黑色油墨。\n\n[0025]第二方面，本申请实施例还提供了一种QD-miniLED发光器件，包括：\n\n[0026]TFT阵列基板；\n\n[0027]多个第二miniLED单体，所述多个第二miniLED单体间隔地设置于所述TFT阵列基板的上表面，每一所述第二miniLED单体的表面为进行超疏水化处理后的表面；\n\n[0028]遮光材料层，其设置于所述TFT阵列基板上，并填充在所述多个第二miniLED单体的间隙内；\n\n[0029]量子点基板，其与所述TFT阵列基板上表面对组贴合，以将多个第二miniLED单体以及遮光材料层夹持在其间。\n\n[0030]在本申请实施例所述的QD-miniLED发光器件中，所述第二miniLED单体的表面设置有粗糙化涂层。\n\n[0031]在本申请实施例所述的QD-miniLED发光器件中所述第二miniLED单体的表面设置有表面能低于第一预设值的涂层。\n\n[0032]本申请提供的QD-miniLED发光器件制作方法及QD-miniLED发光器件通过在miniLED单体的表面进行超疏水化处理，从而降低miniLED单体的表面的浸润性，从而可以避免后续进行遮光材料层的涂布时，遮光材料层残留在miniLED单体的上表面，从而可以避免出现光串扰问题，可以提高产品质量，提高产品良率。\n\n附图说明\n\n[0033]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0034]图1是本申请实施例提供的QD-miniLED发光器件制作方法的工艺流程图。\n\n[0035]图2是本申请实施例提供的QD-miniLED发光器件制作方法的中间场景示意图。\n\n[0036]图3是是本申请实施例提供的QD-miniLED发光器件制作方法的另一中间场景示意图。\n\n[0037]图4是本申请实施例提供的QD-miniLED发光器件的一种结构示意图。\n\n[0038]图5是本申请实施例提供的QD-miniLED发光器件的另一种结构示意图。\n\n具体实施方式\n\n[0039]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0040]请参照图1，图1是本申请实施例提供的QD-miniLED发光器件制作方法的工艺流程图。如图1所示，该QD-miniLED发光器件制作方法包括以下步骤：\n\n[0041]S101、对多个第一miniLED单体的表面进行超疏水化处理，得到多个第二miniLED单体。\n\n[0042]S102、将所述多个第二miniLED单体转移到TFT阵列基板上，所述多个第二miniLED单体在所述TFT阵列基板上间隔分布。\n\n[0043]S103、在所述TFT阵列基板上的多个第二miniLED单体的间隙内填充遮光材料层。\n\n[0044]S104、将所述TFT阵列基板与设置有像素化的量子点基板对组贴合，得到QD-miniLED发光器件。\n\n[0045]其中，在该步骤S101中，在进行超疏水化处理时，可以降低第一miniLED单体的表面能或者增强第一miniLED单体的表面的粗糙结构。\n\n[0046]具体地，在一些实施例中，该步骤S101，包括：对多个第一miniLED单体的表面进行粗糙化处理。其中，该步骤具体为：在所述多个第一miniLED单体的表面制作一层具有微纳结构的涂层。微纳结构是指其尺度为微米级别或者纳米级别。其中，该涂层可以为透光度较高的二氧化硅涂层或者氮化硅涂层。其中，可以采用化学气相沉淀法在所述多个第一miniLED单体的表面沉积一层具有微纳结构的涂层。当然，可以理解地，也可以采用其他的工艺。\n\n[0047]在另一些实施例中，该步骤S101，包括：对多个第一miniLED单体的表面进行降低表面能处理。具体为，在多个第一miniLED单体的表面涂布表面能低于第一预设值的涂层。其中，该涂层可以采用氟化剂溶液涂布得到。具体地，该步骤S101可以包括：S1011、将氟化剂加入到透光度大于第二预设值的无机物溶液或者有机高分子溶液中进行混合，得到混合后的氟化剂溶液；S1012、将所述氟化剂溶液涂布到所述多个第一miniLED单体的表面，以在所述多个第一miniLED单体的表面形成表面能低于预设值的涂层。其中，在该步骤S1011中，该氟化剂可以采用全氟辛基三氯硅烷。该无机物溶液可以采用氮化硅溶液或者二氧化硅溶液，该有机高分子溶液可以采用环氧树脂溶液，其中，混合时可以采用超声波搅拌混合，以提高其混合度。其中，在该步骤S1012中，可以采用喷涂的方式将氟化剂溶液均匀喷涂到第一miniLED单体的表面。\n\n[0048]当然，可以理解地，在一些实施例中，可以将降低第一miniLED单体的表面能以及增强第一miniLED单体的表面的粗糙结构相互结合，例如，可以先在该第一miniLED单体表面采用上述方法中的进行粗糙化处理，然后再在经过粗糙化处理后的表面进行降低表面能处理。\n\n[0049]其中，在该步骤S102中，请参照图2或者图3，图2是本申请实施例提供的QD-miniLED发光器件制作方法的中间场景示意图；图3是是本申请实施例提供的QD-miniLED发光器件制作方法的另一中间场景示意图。如图2或者图3所示，可以采用打件固晶或者ACF工艺的方式，将该多个第二miniLED单体203转移到TFT阵列基板201上。\n\n[0050]其中，在该步骤S103中，遮光材料层可以为黑胶或者黑色油墨。可以采用喷墨印刷或者压胶的方式，在多个第二miniLED单体203的间隙内填充黑胶或者黑色油墨。其中，TFT阵列基板201上预先形成有对应的驱动电路202，以用于驱动该多个第二miniLED单体203发光。其中，在图2中，由于该具有微纳结构的涂层2031的存在，喷涂的遮光材料层204的上表面呈球面状，可以避免在第二miniLED单体203的上表面形成遮光材料层残留。其中，在图3中，由于该表面能低于第一预设值的涂层2032的存在，喷涂的遮光材料层204的上表面呈球面状，可以避免在第二miniLED单体203的上表面形成遮光材料层残留。\n\n[0051]其中，在该步骤S104中，该量子点基板上设置有多个呈阵列分布的像素区域，每一像素区域均呈矩形状，每一像素区域均涂布有量子点层。在进行对组贴合操作时，每一像素区域分别与一第二miniLED单体正对。并且，该遮光材料层刚好与该多个像素区域的间隙相互正对。遮光材料层的上端刚好伸入量子点层的间隙内。\n\n[0052]本申请实施例提供的QD-miniLED发光器件制作方法通过在miniLED单体的表面进行超疏水化处理，从而降低miniLED单体的表面的浸润性，从而可以避免后续进行遮光材料层的涂布时，遮光材料层残留在miniLED单体的上表面，从而可以避免出现光串扰问题，可以提高产品质量，提高产品良率。\n\n[0053]请参阅图4，图4是本申请实施例提供的QD-miniLED发光器件的一种结构示意图。该D-miniLED发光器件采用上述任意实施例中的方法制成。如图4所示，该QD-miniLED发光器件，包括：TFT阵列基板201、第二miniLED单体203、遮光材料层204以及量子点基板205。\n\n[0054]其中，该TFT阵列基板201的上表面设置有驱动电路202。该TFT阵列基板201可以采用玻璃基板添加对于的功能层制成。\n\n[0055]其中，该多个第二miniLED单体203间隔地设置于所述TFT阵列基板的上表面，具体为，该多个第二miniLED单体203呈矩形阵列设置于该TFT阵列基板201的上表面。该驱动电路202驱动该多个第二miniLED单体203进行发光。每一第二miniLED单体的表面为进行超疏水化处理后的表面。例如，在图4中，第二miniLED单体203的表面设置有粗糙化涂层2031。粗糙化涂层2031为微纳结构的涂层。微纳结构是指其尺度为微米级别或者纳米级别。其中，该粗糙化涂层2031可以为透光度较高的二氧化硅涂层或者氮化硅涂层。其中，可以采用化学气相沉淀法在所述多个第一miniLED单体的表面沉积一层具有微纳结构的涂层。当然，可以理解地，也可以采用其他的工艺。\n\n[0056]例如，请参阅图5，图5是本申请实施例提供的QD-miniLED发光器件的另一种结构示意图。在图5中，第二miniLED单体203的表面设置有表面能低于第一预设值的涂层2032。表面能低第一预设值的涂层可以采用氟化剂溶液涂布得到。其中，在本申请中，表面能低于第一预设值的涂层2032或者粗糙化涂层2031降低miniLED单体的表面的浸润性，从而可以避免后续进行遮光材料层的涂布时，遮光材料层在miniLED单体的发光面残留，从而可以提高QD-miniLED发光器的质量，降低不良率。\n\n[0057]其中，该遮光材料层204设置于所述TFT阵列基板201上，并填充在所述多个第二miniLED单体203的间隙内。\n\n[0058]其中，该量子点基板205与所述TFT阵列基板201上表面对组贴合，以将多个第二miniLED单体203以及遮光材料层204夹持在其间。\n\n[0059]本申请实施例提供的QD-miniLED发光器通过在miniLED单体的表面进行超疏水化处理，从而降低miniLED单体的表面的浸润性，从而可以避免后续进行遮光材料层的涂布时，遮光材料层残留在miniLED单体的上表面，从而可以避免出现光串扰问题，可以提高产品质量，提高产品良率。\n\n[0060]以上所述仅为本申请的实施例而已，并不用于限制本申请的保护范围，对于本领域的技术人员来说，本申请可以有各种更改和变化。凡在本申请的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本申请的保护范围之内。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种QD-miniLED发光器件制作方法及QD-miniLED发光器件。\n\n背景技术\n\n[0002]近年来，量子点显示技术受到了光电领域研究者的广泛关注。相对传统的荧光粉而言，量子点具有发光波长可调、半峰宽较窄、荧光量子效率高、可溶液加工等优势，因此，能够得到高色域高品质的显示画面。特别地，可以将量子点与miniLED相结合，从而发展出QD-miniLED新型显示技术。\n\n[0003]一般而言，QD-miniLED显示技术以蓝光miniLED作为背光，利用高能量的蓝光激发红或绿量子点产生相应的红光或绿光，从而实现色转换。这种显示技术相对红、绿、蓝三色miniLED直显技术而言，只需要蓝色miniLED芯片，再结合量子点色转换层，就可以实现全彩化，因此，其工艺和成本可能会相对较低。在开发QD-miniLED显示技术时，由于miniLED芯片的衬底较厚，故容易出现光串扰问题。\n\n发明内容\n\n[0004]本申请提供一种QD-miniLED发光器件制作方法及QD-miniLED发光器件，可以避免遮光材料层残留在miniLED单体的上表面，从而可以避免出现光串扰问题，可以提高产品质量，提高产品良率。\n\n[0005]第一方面，本申请实施例提供了一种QD-miniLED发光器件制作方法，包括以下步骤：\n\n[0006]对多个第一miniLED单体的表面进行超疏水化处理，得到多个第二miniLED单体；\n\n[0007]将所述多个第二miniLED单体转移到TFT阵列基板上，所述多个第二miniLED单体在所述TFT阵列基板上间隔分布；\n\n[0008]在所述TFT阵列基板上的多个第二miniLED单体的间隙内填充遮光材料层；\n\n[0009]将所述TFT阵列基板与设置有像素化的量子点基板对组贴合，得到QD-miniLED发光器件。\n\n[0010]在本申请实施例所述的QD-miniLED发光器件制作方法中，所述对多个第一miniLED单体的表面进行超疏水化处理的步骤，包括：\n\n[0011]对多个第一miniLED单体的表面进行粗糙化处理。\n\n[0012]在本申请实施例所述的QD-miniLED发光器件制作方法中，所述对多个第一miniLED单体的表面进行粗糙化处理的步骤，包括：\n\n[0013]在所述多个第一miniLED单体的表面制作一层具有微纳结构的涂层。\n\n[0014]在本申请实施例所述的QD-miniLED发光器件制作方法中，所述在所述多个第一miniLED单体的表面制作一层具有微纳结构的涂层的步骤，包括：\n\n[0015]采用化学气相沉淀法在所述多个第一miniLED单体的表面沉积一层具有微纳结构的涂层。\n\n[0016]在本申请实施例所述的QD-miniLED发光器件制作方法中，所述涂层为二氧化硅涂层或者氮化硅涂层。\n\n[0017]在本申请实施例所述的QD-miniLED发光器件制作方法中，所述对多个第一miniLED单体的表面进行超疏水化处理的步骤，包括：\n\n[0018]对多个第一miniLED单体的表面进行降低表面能处理。\n\n[0019]在本申请实施例所述的QD-miniLED发光器件制作方法中，所述对多个第一miniLED单体的表面进行降低表面能处理的步骤，包括：\n\n[0020]在多个第一miniLED单体的表面涂布表面能低于第一预设值的涂层。\n\n[0021]在本申请实施例所述的QD-miniLED发光器件制作方法中，所述在多个第一miniLED单体的表面涂布表面能低于预设值的涂层的步骤包括：\n\n[0022]将氟化剂加入到透光度大于第二预设值的无机物溶液或者有机高分子溶液中进行混合，得到混合后的氟化剂溶液；\n\n[0023]将所述氟化剂溶液涂布到所述多个第一miniLED单体的表面，以在所述多个第一miniLED单体的表面形成表面能低于预设值的涂层。\n\n[0024]在本申请实施例所述的QD-miniLED发光器件制作方法中，所述遮光材料层为黑胶或者黑色油墨。\n\n[0025]第二方面，本申请实施例还提供了一种QD-miniLED发光器件，包括：\n\n[0026]TFT阵列基板；\n\n[0027]多个第二miniLED单体，所述多个第二miniLED单体间隔地设置于所述TFT阵列基板的上表面，每一所述第二miniLED单体的表面为进行超疏水化处理后的表面；\n\n[0028]遮光材料层，其设置于所述TFT阵列基板上，并填充在所述多个第二miniLED单体的间隙内；\n\n[0029]量子点基板，其与所述TFT阵列基板上表面对组贴合，以将多个第二miniLED单体以及遮光材料层夹持在其间。\n\n[0030]在本申请实施例所述的QD-miniLED发光器件中，所述第二miniLED单体的表面设置有粗糙化涂层。\n\n[0031]在本申请实施例所述的QD-miniLED发光器件中所述第二miniLED单体的表面设置有表面能低于第一预设值的涂层。\n\n[0032]本申请提供的QD-miniLED发光器件制作方法及QD-miniLED发光器件通过在miniLED单体的表面进行超疏水化处理，从而降低miniLED单体的表面的浸润性，从而可以避免后续进行遮光材料层的涂布时，遮光材料层残留在miniLED单体的上表面，从而可以避免出现光串扰问题，可以提高产品质量，提高产品良率。\n\n附图说明\n\n[0033]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0034]图1是本申请实施例提供的QD-miniLED发光器件制作方法的工艺流程图。\n\n[0035]图2是本申请实施例提供的QD-miniLED发光器件制作方法的中间场景示意图。\n\n[0036]图3是是本申请实施例提供的QD-miniLED发光器件制作方法的另一中间场景示意图。\n\n[0037]图4是本申请实施例提供的QD-miniLED发光器件的一种结构示意图。\n\n[0038]图5是本申请实施例提供的QD-miniLED发光器件的另一种结构示意图。\n\n具体实施方式\n\n[0039]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0040]请参照图1，图1是本申请实施例提供的QD-miniLED发光器件制作方法的工艺流程图。如图1所示，该QD-miniLED发光器件制作方法包括以下步骤：\n\n[0041]S101、对多个第一miniLED单体的表面进行超疏水化处理，得到多个第二miniLED单体。\n\n[0042]S102、将所述多个第二miniLED单体转移到TFT阵列基板上，所述多个第二miniLED单体在所述TFT阵列基板上间隔分布。\n\n[0043]S103、在所述TFT阵列基板上的多个第二miniLED单体的间隙内填充遮光材料层。\n\n[0044]S104、将所述TFT阵列基板与设置有像素化的量子点基板对组贴合，得到QD-miniLED发光器件。\n\n[0045]其中，在该步骤S101中，在进行超疏水化处理时，可以降低第一miniLED单体的表面能或者增强第一miniLED单体的表面的粗糙结构。\n\n[0046]具体地，在一些实施例中，该步骤S101，包括：对多个第一miniLED单体的表面进行粗糙化处理。其中，该步骤具体为：在所述多个第一miniLED单体的表面制作一层具有微纳结构的涂层。微纳结构是指其尺度为微米级别或者纳米级别。其中，该涂层可以为透光度较高的二氧化硅涂层或者氮化硅涂层。其中，可以采用化学气相沉淀法在所述多个第一miniLED单体的表面沉积一层具有微纳结构的涂层。当然，可以理解地，也可以采用其他的工艺。\n\n[0047]在另一些实施例中，该步骤S101，包括：对多个第一miniLED单体的表面进行降低表面能处理。具体为，在多个第一miniLED单体的表面涂布表面能低于第一预设值的涂层。其中，该涂层可以采用氟化剂溶液涂布得到。具体地，该步骤S101可以包括：S1011、将氟化剂加入到透光度大于第二预设值的无机物溶液或者有机高分子溶液中进行混合，得到混合后的氟化剂溶液；S1012、将所述氟化剂溶液涂布到所述多个第一miniLED单体的表面，以在所述多个第一miniLED单体的表面形成表面能低于预设值的涂层。其中，在该步骤S1011中，该氟化剂可以采用全氟辛基三氯硅烷。该无机物溶液可以采用氮化硅溶液或者二氧化硅溶液，该有机高分子溶液可以采用环氧树脂溶液，其中，混合时可以采用超声波搅拌混合，以提高其混合度。其中，在该步骤S1012中，可以采用喷涂的方式将氟化剂溶液均匀喷涂到第一miniLED单体的表面。\n\n[0048]当然，可以理解地，在一些实施例中，可以将降低第一miniLED单体的表面能以及增强第一miniLED单体的表面的粗糙结构相互结合，例如，可以先在该第一miniLED单体表面采用上述方法中的进行粗糙化处理，然后再在经过粗糙化处理后的表面进行降低表面能处理。\n\n[0049]其中，在该步骤S102中，请参照图2或者图3，图2是本申请实施例提供的QD-miniLED发光器件制作方法的中间场景示意图；图3是是本申请实施例提供的QD-miniLED发光器件制作方法的另一中间场景示意图。如图2或者图3所示，可以采用打件固晶或者ACF工艺的方式，将该多个第二miniLED单体203转移到TFT阵列基板201上。\n\n[0050]其中，在该步骤S103中，遮光材料层可以为黑胶或者黑色油墨。可以采用喷墨印刷或者压胶的方式，在多个第二miniLED单体203的间隙内填充黑胶或者黑色油墨。其中，TFT阵列基板201上预先形成有对应的驱动电路202，以用于驱动该多个第二miniLED单体203发光。其中，在图2中，由于该具有微纳结构的涂层2031的存在，喷涂的遮光材料层204的上表面呈球面状，可以避免在第二miniLED单体203的上表面形成遮光材料层残留。其中，在图3中，由于该表面能低于第一预设值的涂层2032的存在，喷涂的遮光材料层204的上表面呈球面状，可以避免在第二miniLED单体203的上表面形成遮光材料层残留。\n\n[0051]其中，在该步骤S104中，该量子点基板上设置有多个呈阵列分布的像素区域，每一像素区域均呈矩形状，每一像素区域均涂布有量子点层。在进行对组贴合操作时，每一像素区域分别与一第二miniLED单体正对。并且，该遮光材料层刚好与该多个像素区域的间隙相互正对。遮光材料层的上端刚好伸入量子点层的间隙内。\n\n[0052]本申请实施例提供的QD-miniLED发光器件制作方法通过在miniLED单体的表面进行超疏水化处理，从而降低miniLED单体的表面的浸润性，从而可以避免后续进行遮光材料层的涂布时，遮光材料层残留在miniLED单体的上表面，从而可以避免出现光串扰问题，可以提高产品质量，提高产品良率。\n\n[0053]请参阅图4，图4是本申请实施例提供的QD-miniLED发光器件的一种结构示意图。该D-miniLED发光器件采用上述任意实施例中的方法制成。如图4所示，该QD-miniLED发光器件，包括：TFT阵列基板201、第二miniLED单体203、遮光材料层204以及量子点基板205。\n\n[0054]其中，该TFT阵列基板201的上表面设置有驱动电路202。该TFT阵列基板201可以采用玻璃基板添加对于的功能层制成。\n\n[0055]其中，该多个第二miniLED单体203间隔地设置于所述TFT阵列基板的上表面，具体为，该多个第二miniLED单体203呈矩形阵列设置于该TFT阵列基板201的上表面。该驱动电路202驱动该多个第二miniLED单体203进行发光。每一第二miniLED单体的表面为进行超疏水化处理后的表面。例如，在图4中，第二miniLED单体203的表面设置有粗糙化涂层2031。粗糙化涂层2031为微纳结构的涂层。微纳结构是指其尺度为微米级别或者纳米级别。其中，该粗糙化涂层2031可以为透光度较高的二氧化硅涂层或者氮化硅涂层。其中，可以采用化学气相沉淀法在所述多个第一miniLED单体的表面沉积一层具有微纳结构的涂层。当然，可以理解地，也可以采用其他的工艺。\n\n[0056]例如，请参阅图5，图5是本申请实施例提供的QD-miniLED发光器件的另一种结构示意图。在图5中，第二miniLED单体203的表面设置有表面能低于第一预设值的涂层2032。表面能低第一预设值的涂层可以采用氟化剂溶液涂布得到。其中，在本申请中，表面能低于第一预设值的涂层2032或者粗糙化涂层2031降低miniLED单体的表面的浸润性，从而可以避免后续进行遮光材料层的涂布时，遮光材料层在miniLED单体的发光面残留，从而可以提高QD-miniLED发光器的质量，降低不良率。\n\n[0057]其中，该遮光材料层204设置于所述TFT阵列基板201上，并填充在所述多个第二miniLED单体203的间隙内。\n\n[0058]其中，该量子点基板205与所述TFT阵列基板201上表面对组贴合，以将多个第二miniLED单体203以及遮光材料层204夹持在其间。\n\n[0059]本申请实施例提供的QD-miniLED发光器通过在miniLED单体的表面进行超疏水化处理，从而降低miniLED单体的表面的浸润性，从而可以避免后续进行遮光材料层的涂布时，遮光材料层残留在miniLED单体的上表面，从而可以避免出现光串扰问题，可以提高产品质量，提高产品良率。\n\n[0060]以上所述仅为本申请的实施例而已，并不用于限制本申请的保护范围，对于本领域的技术人员来说，本申请可以有各种更改和变化。凡在本申请的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本申请的保护范围之内。');
INSERT INTO `os_patent_instruction_text` VALUES (10881, 23935, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种微型发光二极管及显示面板。\n\n背景技术\n\n[0002]Micro LED(Micro Light Emitting Diode，微型发光二极管)显示器具有可靠性高、色域高、亮度高、透明度高、像素密度高等优点，且Micro LED显示器的封装要求低，非常容易实现柔性及无缝拼接显示，是未来极具有发展潜力的显示器。\n\n[0003]目前，在Micro LED显示器的全彩化显示技术中，通常采用蓝光+光致转换层的方案来实现全彩化显示。具体的，通过在驱动基板的红像素、绿像素和蓝像素位置处分别转移蓝光芯片，然后在彩膜基板上分别打印红色量子点和绿色量子点，并通过上下基板的对位贴合来实现颜色的转换，以实现全彩化显示。由于该方案需要防止红像素、绿像素和蓝像素之间的串色，因而通常需要在相邻像素对应的量子点之间单独设置黑色遮光结构。\n\n[0004]然而，由于采用喷墨打印的方式在彩膜基板上形成红绿量子点来实现颜色转换时，相邻量子点之间黑色遮光结构的厚度较大，使得蓝光芯片发出的部分光因被黑色遮光结构吸收而损失掉，进而大大降低了蓝光芯片的光能利用率，增加了产品的能耗。\n\n发明内容\n\n[0005]本申请提供一种微型发光二极管及显示面板，以解决蓝光芯片光能利用率降低的技术问题。\n\n[0006]本申请提供一种微型发光二极管，其包括：\n\n[0007]一发光芯片本体；以及\n\n[0008]一光转换结构，所述光转换结构设置于所述发光芯片本体的发光侧，并用于将所述发光芯片本体发出的光转换成白光；\n\n[0009]其中，所述光转换结构包括缓冲层和光转换单元，所述缓冲层上设置有至少一凹槽，所述光转换单元容置于所述凹槽内。\n\n[0010]在本申请的微型发光二极管中，所述凹槽的数量为多个，每一所述凹槽内均容置有所述光转换单元。\n\n[0011]在本申请的微型发光二极管中，自所述缓冲层的两侧向所述缓冲层的中心的方向上，相邻所述凹槽之间的距离递增。\n\n[0012]在本申请的微型发光二极管中，所述发光芯片本体发出的光为蓝光；\n\n[0013]所述光转换单元的材料包括红色量子点和绿色量子点。\n\n[0014]在本申请的微型发光二极管中，所述发光芯片本体包括：\n\n[0015]一第一电极；\n\n[0016]一第二电极，所述第二电极和所述第一电极相邻设置；\n\n[0017]一电流扩散层，所述电流扩散层设置于所述第二电极上；\n\n[0018]一第一半导体层，所述第一半导体层设置于所述电流扩散层上；\n\n[0019]一发光层，所述发光层设置于所述第一半导体层上；以及\n\n[0020]一第二半导体层，所述第二半导体层设置于所述发光层上，并覆盖所述第一电极，所述光转换结构位于所述第二半导体层上。\n\n[0021]在本申请的微型发光二极管中，所述微型发光二极管还包括一阻隔结构层，所述阻隔结构层设置于所述光转换结构上；\n\n[0022]所述阻隔结构层包括依次设置于所述光转换结构上的第一无机层、有机层和第二无机层。\n\n[0023]本申请还提供一种显示面板，其包括：\n\n[0024]驱动基板；以及\n\n[0025]多个微型发光二极管，多个所述微型发光二极管设置于所述驱动基板上，并电性连接于所述驱动基板；\n\n[0026]其中，所述微型发光二极管包括：\n\n[0027]一发光芯片本体；以及\n\n[0028]一光转换结构，所述光转换结构设置于所述发光芯片本体的发光侧，并用于将所述发光芯片本体发出的光转换成白光；\n\n[0029]其中，所述光转换结构包括缓冲层和光转换单元，所述缓冲层上设置有至少一凹槽，所述光转换单元容置于所述凹槽内。\n\n[0030]在本申请的显示面板中，所述凹槽的数量为多个，每一所述凹槽内均容置有所述光转换单元。\n\n[0031]在本申请的显示面板中，自所述缓冲层的两侧向所述缓冲层的中心的方向上，相邻所述凹槽之间的距离递增。\n\n[0032]在本申请的显示面板中，所述显示面板还包括一遮光单元，所述遮光单元设置于相邻的所述微型发光二极管之间。\n\n[0033]相较于现有技术中的微型发光二极管，本申请提供的微型发光二极管通过将光转换单元集成在发光芯片本体上，具体的，通过在缓冲层上设置至少一凹槽，并将光转换单元容置于凹槽内，进而缩短了发光芯片本体与光转换单元之间的距离，使得发光芯片本体发出的光能够有效地被光转换单元吸收，从而提高了发光芯片本体的光能利用率，降低了光能的损耗，进而降低了产品的能耗。\n\n附图说明\n\n[0034]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0035]图1是本申请实施例提供的微型发光二极管的结构示意图；\n\n[0036]图2是本申请实施例提供的显示面板的结构示意图；\n\n[0037]图3是本申请实施例提供的显示面板中微型发光二极管的结构示意图。\n\n具体实施方式\n\n[0038]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0039]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0040]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0041]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0042]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0043]请参阅图1，图1为本申请实施例提供的微型发光二极管的结构示意图。\n\n[0044]本申请实施例提供一种微型发光二极管100，其包括一发光芯片本体10、一光转换结构11、一阻隔结构层12和一保护层13。光转换结构11设置于发光芯片本体10的发光侧，并用于将发光芯片本体10发出的光转换成白光。阻隔结构层12设置于光转换结构11上。保护层13设置于发光芯片本体10的周侧。其中，光转换结构11包括缓冲层111和光转换单元112。缓冲层111上设置有至少一凹槽111A。光转换单元112容置于凹槽111A内。\n\n[0045]由此，本申请实施例提供的微型发光二极管100通过将光转换单元112集成在发光芯片本体10上，具体的，通过在缓冲层111上设置至少一凹槽111A，并将光转换单元112容置于凹槽111A内，进而缩短了发光芯片本体10与光转换单元112之间的距离，使得发光芯片本体10发出的光能够有效地被光转换单元112吸收，从而提高了发光芯片本体10的光能利用率，降低了光能的损耗。\n\n[0046]在本申请实施例中，发光芯片本体10发出的光为蓝光。光转换单元112的材料包括红色量子点和绿色量子点。其中，光转换单元112由一定配比的红色量子点和绿色量子点混合而成，红色量子点和绿色量子点的具体配比可以根据实际情况进行设定，本申请对此不作限定。\n\n[0047]在一些实施例中，光转换单元112的材料还可以为黄色量子点或者其他能够将蓝光转换成白光的光转换材料。\n\n[0048]另外，在一些实施例中，发光芯片本体10发出的光为紫光。此时，光转换单元112的材料可以为红色量子点、绿色量子点和蓝色量子点的混合，或者，还可以为其他将紫光转换成白光的光转换材料，在此不再赘述。\n\n[0049]进一步的，在本申请实施例中，发光芯片本体10包括：\n\n[0050]一第一电极101；\n\n[0051]一第二电极102，第二电极102和第一电极101相邻设置；\n\n[0052]一电流扩散层103，电流扩散层103设置于第二电极102上；\n\n[0053]一第一半导体层104，第一半导体层104设置于电流扩散层103上；\n\n[0054]一发光层105，发光层105设置于第一半导体层104上；以及\n\n[0055]一第二半导体层106，第二半导体层106设置于发光层105上，并覆盖第一电极101，光转换结构11位于第二半导体层106上。\n\n[0056]需要说明的是，本申请中发光芯片本体10的结构仅为示意，用以方便描述本申请实施例，但并不能理解为对本申请的限制。\n\n[0057]其中，第一电极101为N型电极。第二电极102为P型电极。第一电极101和第二电极102的材料均可以为铟、锡、锌、镍、银、铝、金、铂、钯、镁、钨等金属或合金中的一种或几种，且第一电极101和第二电极102的材料可以相同，也可以不同，本申请对此不作限定。\n\n[0058]电流扩散层103用于增加发光芯片本体10的发光面积。电流扩散层103的材料可以为石墨烯、氧化铟锡、氧化锌、镍、银、铝、金、铂、钯、镁、钨等导电性能及反射性能较好的材料，电流扩散层103的材料还可以根据实际情况进行选择，本申请对此不作限定。\n\n[0059]第一半导体层104为P型氮化镓层。具体的，第一半导体层104为掺杂镁的氮化镓层。\n\n[0060]第二半导体层106为N型氮化镓层。具体的，第二半导体层106为掺杂硅的氮化镓层。\n\n[0061]发光层105为氮化镓量子阱层。具体的，发光层105可以为依次重复排列的氮化铟镓/氮化镓层。\n\n[0062]需要说明的是，本实施例中第一半导体层104、发光层105及第二半导体层106的材料具体可以根据发光芯片本体10的种类进行选择，本实施例不能理解为对本申请的限制。\n\n[0063]另外，在本申请实施例中，保护层13起到阻隔水氧的作用，其用于降低微型发光二极管100中各膜层性能的衰减速率，进而提升微型发光二极管100的使用寿命。其中，保护层13的材料可以为氧化硅、氮化硅、氮氧化硅或氮化铝等导热性能良好的材料，本申请对保护层13的材料不作具体限定。\n\n[0064]在本申请实施例中，缓冲层111的材料为氮化镓。缓冲层111的厚度介于1微米至6微米之间，缓冲层111的具体厚度可以根据实际情况进行设定，在此不再赘述。\n\n[0065]在本申请实施例中，凹槽111A的数量为多个。每一凹槽111A内均容置有光转换单元112。\n\n[0066]需要说明的是，本申请中多个凹槽111A的尺寸可以相同，也可以不同，本申请实施例仅以多个凹槽111A的尺寸相同为例进行说明，但并不限于此。另外，本申请中凹槽111A的截面形状可以为方形或梯形等，本实施例仅以凹槽111A的截面形状为梯形为例进行说明，但并不能理解为对本申请的限制。\n\n[0067]进一步的，凹槽111A的具体个数可以根据实际情况进行设定，本申请对此不作限定。凹槽111A的深度可以根据缓冲层的厚度进行设定，在此不再赘述。\n\n[0068]可以理解的是，当发光芯片本体10发出的蓝光射向光转换单元112时，光转换单元112中的红色量子点和绿色量子点受到蓝光的激发而分别发出红光和绿光，红光、绿光和蓝光混合而形成白光，进而得到能够发出白光的微型发光二极管100。\n\n[0069]在本实施例中，当缓冲层111的厚度一定时，通过在缓冲层111上设置多个凹槽111A，进而为相邻的光转换单元112提供了混光空间，使得单个微型发光二极管中的光转换单元112能够均匀分布，从而有利于提高微型发光二极管出射光线的均一性。进一步的，凹槽111A的数量越多，相邻凹槽111A之间的距离越小，相邻的光转换单元112之间的混光效果越好，从而使得微型发光二极管出射光线的均一性越好。\n\n[0070]进一步的，由于光转换单元112中的红绿量子点所在区域的散热性能较差，本实施例中多个凹槽111A的设置不仅能够将单个微型发光二极管100中的量子点分散开来，而且由于凹槽111A内槽壁的存在，多个凹槽111A的设置增大了量子点和槽壁之间的接触面积，进而有效降低了因量子点过于集中而出现散热性较差的风险，提高了微型发光二极管的散热效果，从而有利于提高微型发光二极管的使用寿命。\n\n[0071]进一步的，在一些实施例中，自缓冲层111的两侧向缓冲层111的中心的方向上，相邻凹槽111A之间的距离递增。\n\n[0072]可以理解的是，由于位于缓冲层111两侧的光的亮度低于位于缓冲层111中心的光的亮度，由此导致微型发光二极管发出的光出现不均匀的问题。在多个凹槽111A的尺寸均相同的情况下，上述设置通过使缓冲层111中心的相邻凹槽111A之间的距离大于两侧的相邻凹槽111A之间的距离，使得缓冲层111中心的光转换单元112的占用面积相较于两侧而降低，也即，此时缓冲层111边缘出射光线的亮度相对于缓冲层111中心出射光线的亮度是增大的，进而缓解了缓冲层111边缘区域的亮度相较于中心区域较暗的现象，从而提高了微型发光二极管出射光线的均匀性，有利于提升微型发光二极管的发光性能。\n\n[0073]在一些实施例中，光转换结构11包括第一区域和第二区域。第一区域和第二区域交替设置。凹槽111A包括第一凹槽和第二凹槽。第一凹槽设置在第一区域。第二凹槽设置在第二区域。相邻的第一凹槽之间设置有第二凹槽。第一凹槽内光转换单元112的材料为红色量子点和绿色量子点。第二凹槽内光转换单元112的材料为黄色量子点。\n\n[0074]可以理解的是，由于黄色量子点的发光效率低于红绿量子点，上述设置通过使黄色量子点和红绿量子点交叉设置，且相邻红绿量子点之间设置为黄色量子点，进而可以降低缓冲层111中间区域的发光亮度，从而提高微型发光二极管出射光线的均匀性。\n\n[0075]在本申请实施例中，阻隔结构层12包括依次设置于光转换结构11上的第一无机层121、有机层122和第二无机层123。\n\n[0076]由于有机材料具有释放应力的作用，本实施例通过在阻隔结构层12中设置一有机层122，能够避免微型发光二极管因受热影响或机械应力的影响而出现膜层的开裂，从而有利于提升微型发光二极管的性能，进一步增加了微型发光二极管的使用寿命。\n\n[0077]其中，第一无机层121及第二无机层123的材料均可以为氧化硅、氮化硅、氮氧化硅等具有良好阻隔水氧作用的无机材料。有机层122的材料可以为聚酰亚胺等有机材料。另外，第一无机层121的材料和第二无机层123的材料可以相同，也可以不同，本申请对此不作限定。\n\n[0078]进一步的，本申请实施例提供的微型发光二极管100的制备方法具体包括以下步骤：\n\n[0079]S101：提供一衬底基板。\n\n[0080]可选的，上述衬底基板可以为蓝宝石衬底、硅衬底或碳化硅衬底。在本申请实施例中，衬底基板为蓝宝石衬底。\n\n[0081]S102：在衬底基板上形成图案化的掩膜层；\n\n[0082]具体的，步骤S102包括以下步骤：\n\n[0083]S1021：在衬底基板上形成一层掩膜层。\n\n[0084]其中，掩膜层的材料可以为氧化硅或氮化硅。在本申请实施例中，掩膜层的材料为氧化硅。\n\n[0085]S1022：形成图案化的掩膜层；\n\n[0086]具体的，采用刻蚀工艺对掩膜层进行刻蚀，以形成图案化的掩膜层。具体的，在本申请实施例中，图案化的掩膜层为条状掩膜层，即，在掩膜层上形成多个条形槽，该条形槽裸露出衬底基板。\n\n[0087]由于电场的极性作用，当电流密度增加时，发光芯片本体的发光波长会发生蓝移现象，上述设置通过使氮化镓晶体沿着条形槽的延伸方向横向生长，有利于生成半极性的氮化镓晶体，进而改善了发光波长的蓝移现象，在微型发光二极管的变电流驱动下，能够保持发光波长的一致性，从而有利于提高微型发光二极管的发光性能。\n\n[0088]在一些实施例中，图案化的掩膜层也可以为其他形状，具体可以根据实际应用需求进行选择，本申请对此不作限定。\n\n[0089]S1023：在图案化的掩膜层上形成缓冲层111。\n\n[0090]首先，采用金属有机化合物化学气相沉积技术，在条形槽内生长氮化镓晶体，使得氮化镓晶体沿着条形槽的延伸方向生长。\n\n[0091]接着，当氮化镓晶体生长至与掩膜层的厚度相同时，继续生长氮化镓晶体，以使氮化镓晶体的厚度超过掩膜层的厚度，进而形成缓冲层111。\n\n[0092]具体的，缓冲层111的厚度介于1微米至6微米之间，缓冲层111的具体厚度可以根据实际情况进行设定，本申请对此不作限定。\n\n[0093]S103：在缓冲层111上形成发光芯片本体10。\n\n[0094]首先，采用金属有机化合物化学气相沉积技术在缓冲层111上依次形成第二半导体层106、发光层105和第一半导体层104。其中，第二半导体层106朝向发光层105的一侧具有裸露部分。\n\n[0095]接着，采用磁控溅射或热蒸发等技术，在第一半导体层104上形成一层电流扩散层103。\n\n[0096]然后，在第二半导体层106的裸露部分上形成第一电极101，在电流扩散层103上形成第二电极102。其中，第二半导体层106、发光层105、第一半导体层104、电流扩散层103、第一电极101以及第二电极102构成发光芯片本体10。\n\n[0097]S104：在发光芯片本体10以及缓冲层111的外侧形成一层保护层13，以得到待形成的微型发光二极管100。\n\n[0098]S105：在发光芯片本体10上形成光转换结构11。\n\n[0099]具体的，步骤S105包括以下步骤：\n\n[0100]步骤S1051：剥离衬底基板；\n\n[0101]步骤S1052：提供一临时基板，并将待形成的微型发光二极管100置于临时基板上。\n\n[0102]其中，上述临时基板的材料可以根据实际情况进行选择，本申请对此不作限定。\n\n[0103]步骤S1053：在缓冲层111上得到多个凹槽111A；\n\n[0104]具体的，采用刻蚀工艺对条状掩膜层进行刻蚀，以除去条状掩膜层，从而使得条状掩膜层所在位置形成条状凹槽111A。进而，在缓冲层111上得到多个凹槽111A。\n\n[0105]步骤S1054：形成光转换结构11。\n\n[0106]具体的，在凹槽111A内形成红色量子点和绿色量子点的混合物，以形成光转换单元112。其中，去除条状掩膜层后的缓冲层111和光转换单元112形成光转换结构11。\n\n[0107]其中，光转换单元112的形成方法可以为雾化喷涂法、刮涂法等，本申请对光转换单元112的形成方法不作具体限定。\n\n[0108]S106：在光转换结构11上形成阻隔结构层12。\n\n[0109]具体的，在光转换结构11上依次形成第二无机层123、有机层122和第一无机层121。其中，第二无机层123、有机层122和第一无机层121的形成方法可以参照现有技术中无机膜层和有机膜层的形成方法，在此不再赘述。\n\n[0110]由此便完成了本申请实施例中微型发光二极管100的制备方法。\n\n[0111]本申请实施例提供的微型发光二极管100通过将光转换单元112集成在发光芯片本体10上，具体的，通过在缓冲层111上设置多个凹槽111A，并将光转换单元112容置于凹槽111A内，进而缩短了发光芯片本体10与光转换单元112之间的距离，使得发光芯片本体10发出的光能够有效地被光转换单元112吸收，从而提高了发光芯片本体10的光能利用率，降低了光能的损耗。另外，本实施例中多个凹槽111A的设置有利于提高微型发光二极管出射光线的均一性，从而有利于提升微型发光二极管的发光性能。\n\n[0112]请参阅图2和图3，其中，图2为本申请实施例提供的显示面板的结构示意图；图3为本申请实施例提供的显示面板中微型发光二极管的结构示意图。\n\n[0113]本申请实施例提供一种显示面板200，其包括驱动基板20、多个微型发光二极管100和彩膜基板21。多个微型发光二极管100设置于驱动基板20上，并电性连接于驱动基板20。彩膜基板21设置于微型发光二极管100远离驱动基板20的一侧。其中，微型发光二极管100包括一发光芯片本体10和一光转换结构11。光转换结构11设置于发光芯片本体10的发光侧，并用于将发光芯片本体10发出的光转换成白光。光转换结构11包括缓冲层111和光转换单元112。缓冲层111上设置有至少一凹槽111A。光转换单元112容置于凹槽111A内。\n\n[0114]由此，本申请实施例提供的显示面板200通过将光转换单元112集成在发光芯片本体10上，具体的，通过在缓冲层111上设置至少一凹槽111A，并将光转换单元112容置于凹槽111A内，进而缩短了发光芯片本体10与光转换单元112之间的距离，使得发光芯片本体10发出的光能够有效地被光转换单元112吸收，从而提高了发光芯片本体10的光能利用率，降低了显示面板的能耗。\n\n[0115]在现有技术中，当采用喷墨打印方式在彩膜基板上分别形成红色量子点和绿色量子点以实现颜色转换时，为了避免像素之间的串色，通常在相邻像素对应的量子点之间设置黑色遮光结构。然而，在上述设置中，采用喷墨打印技术形成量子点的成本较高，且工艺复杂。\n\n[0116]本实施例通过将光转换单元112集成在发光芯片本体10上，进而能够省去喷墨打印工艺，从而有利于节省工艺成本，并且降低了对设备的依赖性。另外，通过将光转换单元112集成的方式，省去了原有彩膜基板21上相邻像素对应的量子点之间的黑色遮光结构，从而进一步降低了工艺成本。\n\n[0117]需要说明的是，本申请实施例中微型发光二极管100的具体结构及各膜层材料可以参照前述实施例中微型发光二极管100的阐述，在此不再赘述。\n\n[0118]在本申请实施例中，显示面板200还包括一遮光单元22。遮光单元22设置于相邻的微型发光二极管100之间。具体的，遮光单元22远离驱动基板20的一侧与光转换结构11远离基板的一侧齐平。由此，本实施例使得相邻微型发光二极管100对应的光转换结构11之间与发光芯片本体10之间共用一遮光单元22，进而节约了工艺成本。\n\n[0119]在一些实施例中，遮光单元22远离驱动基板20的一侧与阻隔结构层12远离基板的一侧齐平。该设置可以最大程度防止相邻微型发光二极管100之间发生串色，能够避免发光芯片本体10光能的损耗，进而进一步提高了发光芯片本体10的光能利用率，从而提高了光转换单元112的发光效率。\n\n[0120]在本申请实施例中，彩膜基板21包括基底21A和设置在基底21A上的彩色滤光层21B。彩色滤光层21B位于基底21A靠近驱动基板20的一侧上。彩色滤光层21B包括相邻设置的红色滤光块211、绿色滤光块212以及蓝色滤光块213。此外，彩膜基板21还包括设置在红色滤光块211、绿色滤光块212以及蓝色滤光块213之间的黑色矩阵214。\n\n[0121]需要说明的是，本申请实施例中彩膜基板21及驱动基板20的结构仅为示意，用以方便描述本申请实施例，但并不能理解为对本申请的限制。\n\n[0122]另外，本申请实施例中驱动基板20的具体结构可以参照现有技术，在此不再赘述。\n\n[0123]本申请实施例提供的显示面板200通过将光转换单元112集成在发光芯片本体10上，具体的，通过在缓冲层111上设置至少一凹槽111A，并将光转换单元112容置于凹槽111A内，进而缩短了发光芯片本体10与光转换单元112之间的距离，使得发光芯片本体10发出的光能够有效地被光转换单元112吸收，从而提高了发光芯片本体10的光能利用率，降低了显示面板的能耗。此外，本实施例省去了喷墨打印技术，进而简化了工艺，节约了工艺成本。\n\n[0124]相较于现有技术中的微型发光二极管，本申请提供的微型发光二极管通过将光转换单元集成在发光芯片本体上，具体的，通过在缓冲层上设置至少一凹槽，并将光转换单元容置于凹槽内，进而缩短了发光芯片本体与光转换单元之间的距离，使得发光芯片本体发出的光能够有效地被光转换单元吸收，从而提高了发光芯片本体的光能利用率，降低了光能的损耗，进而降低了产品的能耗。\n\n[0125]以上对本申请实施方式提供了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施方式的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种微型发光二极管及显示面板。\n\n背景技术\n\n[0002]Micro LED(Micro Light Emitting Diode，微型发光二极管)显示器具有可靠性高、色域高、亮度高、透明度高、像素密度高等优点，且Micro LED显示器的封装要求低，非常容易实现柔性及无缝拼接显示，是未来极具有发展潜力的显示器。\n\n[0003]目前，在Micro LED显示器的全彩化显示技术中，通常采用蓝光+光致转换层的方案来实现全彩化显示。具体的，通过在驱动基板的红像素、绿像素和蓝像素位置处分别转移蓝光芯片，然后在彩膜基板上分别打印红色量子点和绿色量子点，并通过上下基板的对位贴合来实现颜色的转换，以实现全彩化显示。由于该方案需要防止红像素、绿像素和蓝像素之间的串色，因而通常需要在相邻像素对应的量子点之间单独设置黑色遮光结构。\n\n[0004]然而，由于采用喷墨打印的方式在彩膜基板上形成红绿量子点来实现颜色转换时，相邻量子点之间黑色遮光结构的厚度较大，使得蓝光芯片发出的部分光因被黑色遮光结构吸收而损失掉，进而大大降低了蓝光芯片的光能利用率，增加了产品的能耗。\n\n发明内容\n\n[0005]本申请提供一种微型发光二极管及显示面板，以解决蓝光芯片光能利用率降低的技术问题。\n\n[0006]本申请提供一种微型发光二极管，其包括：\n\n[0007]一发光芯片本体；以及\n\n[0008]一光转换结构，所述光转换结构设置于所述发光芯片本体的发光侧，并用于将所述发光芯片本体发出的光转换成白光；\n\n[0009]其中，所述光转换结构包括缓冲层和光转换单元，所述缓冲层上设置有至少一凹槽，所述光转换单元容置于所述凹槽内。\n\n[0010]在本申请的微型发光二极管中，所述凹槽的数量为多个，每一所述凹槽内均容置有所述光转换单元。\n\n[0011]在本申请的微型发光二极管中，自所述缓冲层的两侧向所述缓冲层的中心的方向上，相邻所述凹槽之间的距离递增。\n\n[0012]在本申请的微型发光二极管中，所述发光芯片本体发出的光为蓝光；\n\n[0013]所述光转换单元的材料包括红色量子点和绿色量子点。\n\n[0014]在本申请的微型发光二极管中，所述发光芯片本体包括：\n\n[0015]一第一电极；\n\n[0016]一第二电极，所述第二电极和所述第一电极相邻设置；\n\n[0017]一电流扩散层，所述电流扩散层设置于所述第二电极上；\n\n[0018]一第一半导体层，所述第一半导体层设置于所述电流扩散层上；\n\n[0019]一发光层，所述发光层设置于所述第一半导体层上；以及\n\n[0020]一第二半导体层，所述第二半导体层设置于所述发光层上，并覆盖所述第一电极，所述光转换结构位于所述第二半导体层上。\n\n[0021]在本申请的微型发光二极管中，所述微型发光二极管还包括一阻隔结构层，所述阻隔结构层设置于所述光转换结构上；\n\n[0022]所述阻隔结构层包括依次设置于所述光转换结构上的第一无机层、有机层和第二无机层。\n\n[0023]本申请还提供一种显示面板，其包括：\n\n[0024]驱动基板；以及\n\n[0025]多个微型发光二极管，多个所述微型发光二极管设置于所述驱动基板上，并电性连接于所述驱动基板；\n\n[0026]其中，所述微型发光二极管包括：\n\n[0027]一发光芯片本体；以及\n\n[0028]一光转换结构，所述光转换结构设置于所述发光芯片本体的发光侧，并用于将所述发光芯片本体发出的光转换成白光；\n\n[0029]其中，所述光转换结构包括缓冲层和光转换单元，所述缓冲层上设置有至少一凹槽，所述光转换单元容置于所述凹槽内。\n\n[0030]在本申请的显示面板中，所述凹槽的数量为多个，每一所述凹槽内均容置有所述光转换单元。\n\n[0031]在本申请的显示面板中，自所述缓冲层的两侧向所述缓冲层的中心的方向上，相邻所述凹槽之间的距离递增。\n\n[0032]在本申请的显示面板中，所述显示面板还包括一遮光单元，所述遮光单元设置于相邻的所述微型发光二极管之间。\n\n[0033]相较于现有技术中的微型发光二极管，本申请提供的微型发光二极管通过将光转换单元集成在发光芯片本体上，具体的，通过在缓冲层上设置至少一凹槽，并将光转换单元容置于凹槽内，进而缩短了发光芯片本体与光转换单元之间的距离，使得发光芯片本体发出的光能够有效地被光转换单元吸收，从而提高了发光芯片本体的光能利用率，降低了光能的损耗，进而降低了产品的能耗。\n\n附图说明\n\n[0034]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0035]图1是本申请实施例提供的微型发光二极管的结构示意图；\n\n[0036]图2是本申请实施例提供的显示面板的结构示意图；\n\n[0037]图3是本申请实施例提供的显示面板中微型发光二极管的结构示意图。\n\n具体实施方式\n\n[0038]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0039]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0040]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0041]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0042]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0043]请参阅图1，图1为本申请实施例提供的微型发光二极管的结构示意图。\n\n[0044]本申请实施例提供一种微型发光二极管100，其包括一发光芯片本体10、一光转换结构11、一阻隔结构层12和一保护层13。光转换结构11设置于发光芯片本体10的发光侧，并用于将发光芯片本体10发出的光转换成白光。阻隔结构层12设置于光转换结构11上。保护层13设置于发光芯片本体10的周侧。其中，光转换结构11包括缓冲层111和光转换单元112。缓冲层111上设置有至少一凹槽111A。光转换单元112容置于凹槽111A内。\n\n[0045]由此，本申请实施例提供的微型发光二极管100通过将光转换单元112集成在发光芯片本体10上，具体的，通过在缓冲层111上设置至少一凹槽111A，并将光转换单元112容置于凹槽111A内，进而缩短了发光芯片本体10与光转换单元112之间的距离，使得发光芯片本体10发出的光能够有效地被光转换单元112吸收，从而提高了发光芯片本体10的光能利用率，降低了光能的损耗。\n\n[0046]在本申请实施例中，发光芯片本体10发出的光为蓝光。光转换单元112的材料包括红色量子点和绿色量子点。其中，光转换单元112由一定配比的红色量子点和绿色量子点混合而成，红色量子点和绿色量子点的具体配比可以根据实际情况进行设定，本申请对此不作限定。\n\n[0047]在一些实施例中，光转换单元112的材料还可以为黄色量子点或者其他能够将蓝光转换成白光的光转换材料。\n\n[0048]另外，在一些实施例中，发光芯片本体10发出的光为紫光。此时，光转换单元112的材料可以为红色量子点、绿色量子点和蓝色量子点的混合，或者，还可以为其他将紫光转换成白光的光转换材料，在此不再赘述。\n\n[0049]进一步的，在本申请实施例中，发光芯片本体10包括：\n\n[0050]一第一电极101；\n\n[0051]一第二电极102，第二电极102和第一电极101相邻设置；\n\n[0052]一电流扩散层103，电流扩散层103设置于第二电极102上；\n\n[0053]一第一半导体层104，第一半导体层104设置于电流扩散层103上；\n\n[0054]一发光层105，发光层105设置于第一半导体层104上；以及\n\n[0055]一第二半导体层106，第二半导体层106设置于发光层105上，并覆盖第一电极101，光转换结构11位于第二半导体层106上。\n\n[0056]需要说明的是，本申请中发光芯片本体10的结构仅为示意，用以方便描述本申请实施例，但并不能理解为对本申请的限制。\n\n[0057]其中，第一电极101为N型电极。第二电极102为P型电极。第一电极101和第二电极102的材料均可以为铟、锡、锌、镍、银、铝、金、铂、钯、镁、钨等金属或合金中的一种或几种，且第一电极101和第二电极102的材料可以相同，也可以不同，本申请对此不作限定。\n\n[0058]电流扩散层103用于增加发光芯片本体10的发光面积。电流扩散层103的材料可以为石墨烯、氧化铟锡、氧化锌、镍、银、铝、金、铂、钯、镁、钨等导电性能及反射性能较好的材料，电流扩散层103的材料还可以根据实际情况进行选择，本申请对此不作限定。\n\n[0059]第一半导体层104为P型氮化镓层。具体的，第一半导体层104为掺杂镁的氮化镓层。\n\n[0060]第二半导体层106为N型氮化镓层。具体的，第二半导体层106为掺杂硅的氮化镓层。\n\n[0061]发光层105为氮化镓量子阱层。具体的，发光层105可以为依次重复排列的氮化铟镓/氮化镓层。\n\n[0062]需要说明的是，本实施例中第一半导体层104、发光层105及第二半导体层106的材料具体可以根据发光芯片本体10的种类进行选择，本实施例不能理解为对本申请的限制。\n\n[0063]另外，在本申请实施例中，保护层13起到阻隔水氧的作用，其用于降低微型发光二极管100中各膜层性能的衰减速率，进而提升微型发光二极管100的使用寿命。其中，保护层13的材料可以为氧化硅、氮化硅、氮氧化硅或氮化铝等导热性能良好的材料，本申请对保护层13的材料不作具体限定。\n\n[0064]在本申请实施例中，缓冲层111的材料为氮化镓。缓冲层111的厚度介于1微米至6微米之间，缓冲层111的具体厚度可以根据实际情况进行设定，在此不再赘述。\n\n[0065]在本申请实施例中，凹槽111A的数量为多个。每一凹槽111A内均容置有光转换单元112。\n\n[0066]需要说明的是，本申请中多个凹槽111A的尺寸可以相同，也可以不同，本申请实施例仅以多个凹槽111A的尺寸相同为例进行说明，但并不限于此。另外，本申请中凹槽111A的截面形状可以为方形或梯形等，本实施例仅以凹槽111A的截面形状为梯形为例进行说明，但并不能理解为对本申请的限制。\n\n[0067]进一步的，凹槽111A的具体个数可以根据实际情况进行设定，本申请对此不作限定。凹槽111A的深度可以根据缓冲层的厚度进行设定，在此不再赘述。\n\n[0068]可以理解的是，当发光芯片本体10发出的蓝光射向光转换单元112时，光转换单元112中的红色量子点和绿色量子点受到蓝光的激发而分别发出红光和绿光，红光、绿光和蓝光混合而形成白光，进而得到能够发出白光的微型发光二极管100。\n\n[0069]在本实施例中，当缓冲层111的厚度一定时，通过在缓冲层111上设置多个凹槽111A，进而为相邻的光转换单元112提供了混光空间，使得单个微型发光二极管中的光转换单元112能够均匀分布，从而有利于提高微型发光二极管出射光线的均一性。进一步的，凹槽111A的数量越多，相邻凹槽111A之间的距离越小，相邻的光转换单元112之间的混光效果越好，从而使得微型发光二极管出射光线的均一性越好。\n\n[0070]进一步的，由于光转换单元112中的红绿量子点所在区域的散热性能较差，本实施例中多个凹槽111A的设置不仅能够将单个微型发光二极管100中的量子点分散开来，而且由于凹槽111A内槽壁的存在，多个凹槽111A的设置增大了量子点和槽壁之间的接触面积，进而有效降低了因量子点过于集中而出现散热性较差的风险，提高了微型发光二极管的散热效果，从而有利于提高微型发光二极管的使用寿命。\n\n[0071]进一步的，在一些实施例中，自缓冲层111的两侧向缓冲层111的中心的方向上，相邻凹槽111A之间的距离递增。\n\n[0072]可以理解的是，由于位于缓冲层111两侧的光的亮度低于位于缓冲层111中心的光的亮度，由此导致微型发光二极管发出的光出现不均匀的问题。在多个凹槽111A的尺寸均相同的情况下，上述设置通过使缓冲层111中心的相邻凹槽111A之间的距离大于两侧的相邻凹槽111A之间的距离，使得缓冲层111中心的光转换单元112的占用面积相较于两侧而降低，也即，此时缓冲层111边缘出射光线的亮度相对于缓冲层111中心出射光线的亮度是增大的，进而缓解了缓冲层111边缘区域的亮度相较于中心区域较暗的现象，从而提高了微型发光二极管出射光线的均匀性，有利于提升微型发光二极管的发光性能。\n\n[0073]在一些实施例中，光转换结构11包括第一区域和第二区域。第一区域和第二区域交替设置。凹槽111A包括第一凹槽和第二凹槽。第一凹槽设置在第一区域。第二凹槽设置在第二区域。相邻的第一凹槽之间设置有第二凹槽。第一凹槽内光转换单元112的材料为红色量子点和绿色量子点。第二凹槽内光转换单元112的材料为黄色量子点。\n\n[0074]可以理解的是，由于黄色量子点的发光效率低于红绿量子点，上述设置通过使黄色量子点和红绿量子点交叉设置，且相邻红绿量子点之间设置为黄色量子点，进而可以降低缓冲层111中间区域的发光亮度，从而提高微型发光二极管出射光线的均匀性。\n\n[0075]在本申请实施例中，阻隔结构层12包括依次设置于光转换结构11上的第一无机层121、有机层122和第二无机层123。\n\n[0076]由于有机材料具有释放应力的作用，本实施例通过在阻隔结构层12中设置一有机层122，能够避免微型发光二极管因受热影响或机械应力的影响而出现膜层的开裂，从而有利于提升微型发光二极管的性能，进一步增加了微型发光二极管的使用寿命。\n\n[0077]其中，第一无机层121及第二无机层123的材料均可以为氧化硅、氮化硅、氮氧化硅等具有良好阻隔水氧作用的无机材料。有机层122的材料可以为聚酰亚胺等有机材料。另外，第一无机层121的材料和第二无机层123的材料可以相同，也可以不同，本申请对此不作限定。\n\n[0078]进一步的，本申请实施例提供的微型发光二极管100的制备方法具体包括以下步骤：\n\n[0079]S101：提供一衬底基板。\n\n[0080]可选的，上述衬底基板可以为蓝宝石衬底、硅衬底或碳化硅衬底。在本申请实施例中，衬底基板为蓝宝石衬底。\n\n[0081]S102：在衬底基板上形成图案化的掩膜层；\n\n[0082]具体的，步骤S102包括以下步骤：\n\n[0083]S1021：在衬底基板上形成一层掩膜层。\n\n[0084]其中，掩膜层的材料可以为氧化硅或氮化硅。在本申请实施例中，掩膜层的材料为氧化硅。\n\n[0085]S1022：形成图案化的掩膜层；\n\n[0086]具体的，采用刻蚀工艺对掩膜层进行刻蚀，以形成图案化的掩膜层。具体的，在本申请实施例中，图案化的掩膜层为条状掩膜层，即，在掩膜层上形成多个条形槽，该条形槽裸露出衬底基板。\n\n[0087]由于电场的极性作用，当电流密度增加时，发光芯片本体的发光波长会发生蓝移现象，上述设置通过使氮化镓晶体沿着条形槽的延伸方向横向生长，有利于生成半极性的氮化镓晶体，进而改善了发光波长的蓝移现象，在微型发光二极管的变电流驱动下，能够保持发光波长的一致性，从而有利于提高微型发光二极管的发光性能。\n\n[0088]在一些实施例中，图案化的掩膜层也可以为其他形状，具体可以根据实际应用需求进行选择，本申请对此不作限定。\n\n[0089]S1023：在图案化的掩膜层上形成缓冲层111。\n\n[0090]首先，采用金属有机化合物化学气相沉积技术，在条形槽内生长氮化镓晶体，使得氮化镓晶体沿着条形槽的延伸方向生长。\n\n[0091]接着，当氮化镓晶体生长至与掩膜层的厚度相同时，继续生长氮化镓晶体，以使氮化镓晶体的厚度超过掩膜层的厚度，进而形成缓冲层111。\n\n[0092]具体的，缓冲层111的厚度介于1微米至6微米之间，缓冲层111的具体厚度可以根据实际情况进行设定，本申请对此不作限定。\n\n[0093]S103：在缓冲层111上形成发光芯片本体10。\n\n[0094]首先，采用金属有机化合物化学气相沉积技术在缓冲层111上依次形成第二半导体层106、发光层105和第一半导体层104。其中，第二半导体层106朝向发光层105的一侧具有裸露部分。\n\n[0095]接着，采用磁控溅射或热蒸发等技术，在第一半导体层104上形成一层电流扩散层103。\n\n[0096]然后，在第二半导体层106的裸露部分上形成第一电极101，在电流扩散层103上形成第二电极102。其中，第二半导体层106、发光层105、第一半导体层104、电流扩散层103、第一电极101以及第二电极102构成发光芯片本体10。\n\n[0097]S104：在发光芯片本体10以及缓冲层111的外侧形成一层保护层13，以得到待形成的微型发光二极管100。\n\n[0098]S105：在发光芯片本体10上形成光转换结构11。\n\n[0099]具体的，步骤S105包括以下步骤：\n\n[0100]步骤S1051：剥离衬底基板；\n\n[0101]步骤S1052：提供一临时基板，并将待形成的微型发光二极管100置于临时基板上。\n\n[0102]其中，上述临时基板的材料可以根据实际情况进行选择，本申请对此不作限定。\n\n[0103]步骤S1053：在缓冲层111上得到多个凹槽111A；\n\n[0104]具体的，采用刻蚀工艺对条状掩膜层进行刻蚀，以除去条状掩膜层，从而使得条状掩膜层所在位置形成条状凹槽111A。进而，在缓冲层111上得到多个凹槽111A。\n\n[0105]步骤S1054：形成光转换结构11。\n\n[0106]具体的，在凹槽111A内形成红色量子点和绿色量子点的混合物，以形成光转换单元112。其中，去除条状掩膜层后的缓冲层111和光转换单元112形成光转换结构11。\n\n[0107]其中，光转换单元112的形成方法可以为雾化喷涂法、刮涂法等，本申请对光转换单元112的形成方法不作具体限定。\n\n[0108]S106：在光转换结构11上形成阻隔结构层12。\n\n[0109]具体的，在光转换结构11上依次形成第二无机层123、有机层122和第一无机层121。其中，第二无机层123、有机层122和第一无机层121的形成方法可以参照现有技术中无机膜层和有机膜层的形成方法，在此不再赘述。\n\n[0110]由此便完成了本申请实施例中微型发光二极管100的制备方法。\n\n[0111]本申请实施例提供的微型发光二极管100通过将光转换单元112集成在发光芯片本体10上，具体的，通过在缓冲层111上设置多个凹槽111A，并将光转换单元112容置于凹槽111A内，进而缩短了发光芯片本体10与光转换单元112之间的距离，使得发光芯片本体10发出的光能够有效地被光转换单元112吸收，从而提高了发光芯片本体10的光能利用率，降低了光能的损耗。另外，本实施例中多个凹槽111A的设置有利于提高微型发光二极管出射光线的均一性，从而有利于提升微型发光二极管的发光性能。\n\n[0112]请参阅图2和图3，其中，图2为本申请实施例提供的显示面板的结构示意图；图3为本申请实施例提供的显示面板中微型发光二极管的结构示意图。\n\n[0113]本申请实施例提供一种显示面板200，其包括驱动基板20、多个微型发光二极管100和彩膜基板21。多个微型发光二极管100设置于驱动基板20上，并电性连接于驱动基板20。彩膜基板21设置于微型发光二极管100远离驱动基板20的一侧。其中，微型发光二极管100包括一发光芯片本体10和一光转换结构11。光转换结构11设置于发光芯片本体10的发光侧，并用于将发光芯片本体10发出的光转换成白光。光转换结构11包括缓冲层111和光转换单元112。缓冲层111上设置有至少一凹槽111A。光转换单元112容置于凹槽111A内。\n\n[0114]由此，本申请实施例提供的显示面板200通过将光转换单元112集成在发光芯片本体10上，具体的，通过在缓冲层111上设置至少一凹槽111A，并将光转换单元112容置于凹槽111A内，进而缩短了发光芯片本体10与光转换单元112之间的距离，使得发光芯片本体10发出的光能够有效地被光转换单元112吸收，从而提高了发光芯片本体10的光能利用率，降低了显示面板的能耗。\n\n[0115]在现有技术中，当采用喷墨打印方式在彩膜基板上分别形成红色量子点和绿色量子点以实现颜色转换时，为了避免像素之间的串色，通常在相邻像素对应的量子点之间设置黑色遮光结构。然而，在上述设置中，采用喷墨打印技术形成量子点的成本较高，且工艺复杂。\n\n[0116]本实施例通过将光转换单元112集成在发光芯片本体10上，进而能够省去喷墨打印工艺，从而有利于节省工艺成本，并且降低了对设备的依赖性。另外，通过将光转换单元112集成的方式，省去了原有彩膜基板21上相邻像素对应的量子点之间的黑色遮光结构，从而进一步降低了工艺成本。\n\n[0117]需要说明的是，本申请实施例中微型发光二极管100的具体结构及各膜层材料可以参照前述实施例中微型发光二极管100的阐述，在此不再赘述。\n\n[0118]在本申请实施例中，显示面板200还包括一遮光单元22。遮光单元22设置于相邻的微型发光二极管100之间。具体的，遮光单元22远离驱动基板20的一侧与光转换结构11远离基板的一侧齐平。由此，本实施例使得相邻微型发光二极管100对应的光转换结构11之间与发光芯片本体10之间共用一遮光单元22，进而节约了工艺成本。\n\n[0119]在一些实施例中，遮光单元22远离驱动基板20的一侧与阻隔结构层12远离基板的一侧齐平。该设置可以最大程度防止相邻微型发光二极管100之间发生串色，能够避免发光芯片本体10光能的损耗，进而进一步提高了发光芯片本体10的光能利用率，从而提高了光转换单元112的发光效率。\n\n[0120]在本申请实施例中，彩膜基板21包括基底21A和设置在基底21A上的彩色滤光层21B。彩色滤光层21B位于基底21A靠近驱动基板20的一侧上。彩色滤光层21B包括相邻设置的红色滤光块211、绿色滤光块212以及蓝色滤光块213。此外，彩膜基板21还包括设置在红色滤光块211、绿色滤光块212以及蓝色滤光块213之间的黑色矩阵214。\n\n[0121]需要说明的是，本申请实施例中彩膜基板21及驱动基板20的结构仅为示意，用以方便描述本申请实施例，但并不能理解为对本申请的限制。\n\n[0122]另外，本申请实施例中驱动基板20的具体结构可以参照现有技术，在此不再赘述。\n\n[0123]本申请实施例提供的显示面板200通过将光转换单元112集成在发光芯片本体10上，具体的，通过在缓冲层111上设置至少一凹槽111A，并将光转换单元112容置于凹槽111A内，进而缩短了发光芯片本体10与光转换单元112之间的距离，使得发光芯片本体10发出的光能够有效地被光转换单元112吸收，从而提高了发光芯片本体10的光能利用率，降低了显示面板的能耗。此外，本实施例省去了喷墨打印技术，进而简化了工艺，节约了工艺成本。\n\n[0124]相较于现有技术中的微型发光二极管，本申请提供的微型发光二极管通过将光转换单元集成在发光芯片本体上，具体的，通过在缓冲层上设置至少一凹槽，并将光转换单元容置于凹槽内，进而缩短了发光芯片本体与光转换单元之间的距离，使得发光芯片本体发出的光能够有效地被光转换单元吸收，从而提高了发光芯片本体的光能利用率，降低了光能的损耗，进而降低了产品的能耗。\n\n[0125]以上对本申请实施方式提供了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施方式的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10882, 23936, '技术领域\n\n[0001]本发明涉及拼接显示技术领域，尤其涉及一种显示面板。\n\n背景技术\n\n[0002]微发光二极管(Micro LED)是新一代显示技术，具有自发光显示特性，相较于现有的有机发光二极管(Organic Light-Emitting Diode,OLED)技术，Micro LED显示装置具有亮度更高、发光效率更好、功耗更低的优点。\n\n[0003]Micro LED显示装置底层用正常的CMOS集成电路制造工艺制成LED显示驱动电路，然后在集成电路上制作Micro LED阵列，从而实现了微型显示屏，也就是所说的LED显示屏的缩小版，达到微米级。由于相邻的两个Micro LED拼接在一起，产生拼接位置，拼接处光线较弱、翘曲、不平整，导致Micro LED灯板在拼接位置产生暗线。\n\n[0004]综上所述，需要设计出一种新的显示面板结构，以解决现有技术中显示面板拼接位置产生暗线，拼接位置发光的色调和正常发光区域亮度不一致，影响显示面板中显示品质的技术问题。\n\n发明内容\n\n[0005]本发明实施例提供一种显示面板，能够解决现有技术中显示面板拼接位置产生暗线，拼接位置发光的色调和正常发光区域亮度不一致，影响显示面板中显示品质的技术问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明实施例提供一种显示面板，至少包括拼接设置的第一子显示面板和第二子显示面板，所述第一子显示面板和所述第二子显示面板的连接处设置有补光构件，所述补光构件包括全反射件以及向所述全反射件两侧延伸的导光件，所述导光件覆盖有发光像素，其中，所述导光件将所述发光像素出射的光线导入所述全反射件上，所述全反射件将导入光线从所述第一子显示面板和所述第二子显示面板的连接处出射。\n\n[0008]根据本发明一优选实施例，所述导光件包括第一导光件和第二导光件，所述第一导光件设置有第一半透射半反射板，所述第二导光件设置有第二半透射半反射板，所述第一半透射半反射板位于所述第一子显示面板的边缘，所述第二半透射半反射板位于所述第二子显示面板的边缘。\n\n[0009]根据本发明一优选实施例，所述全反射件包括对接设置的第一全反射板和第二全反射板，所述第一半透射半反射板的倾斜方向朝向所述第一反射板，所述第二半透射半反射板的倾斜方向朝向所述第二反射板。\n\n[0010]根据本发明一优选实施例，所述第一半透射半反射板上方平行设置第一全透板，所述第二半透射半反射板上方平行设置第二全透板。\n\n[0011]根据本发明一优选实施例，所述第一半透射半反射板和所述第二半透射半反射板均为聚乙烯醇薄膜，所述第一反射板和所述第二反射板均为玻璃基板，所述第一全透板和所述第二全透板均为透明聚酰亚胺薄膜。\n\n[0012]根据本发明一优选实施例，所述第一半透射半反射板和所述第二半透射半反射板发生全反射的光线均占比为20％至50％范围内，发生折反射的光线均占比为50％至70％范围内。\n\n[0013]根据本发明一优选实施例，所述第一半透射半反射板、所述第二半透射半反射板、所述第一反射板和所述第二反射板的水平夹角均为锐角。\n\n[0014]根据本发明一优选实施例，所述第一导光件、所述第二导光件以及所述全反射件内填充为透明介质，所述第一导光件和所述第二导光件内的透明介质的折射率大于或等于所述全反射件内的透明介质的折射率。\n\n[0015]根据本发明一优选实施例，所述导光件的水平长度均为1至5个所述发光像素的间距。\n\n[0016]根据本发明一优选实施例，所述显示面板为OLED显示面板、mini-LED显示面板或Micro LED显示面板。\n\n[0017]有益效果：本发明实施例提供一种显示面板，显示面板包括阵列分布的子显示面板以及位于子显示面板间隙的补光构件，补光构件包括半透射半反射板以及全反射板，半透射半反射板靠近子显示面板边缘设置，并延伸至显示区，全反射板位于子显示面板的间隙上方，且全反射板与半透射半反射板对应设置，显示区中光源垂直发射光线，经过半透射半反射板时，约50％的光折射出去，另外50％的光反射到全反射板上，全反射板上将该反射光再次反射出去，实现了子显示面板的边框和间隙有垂直光线出射，可消除暗区的存在，实现无缝拼接显示屏，从而提高显示面板显示的均一性。\n\n附图说明\n\n[0018]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1为本发明实施例提供的一种显示面板俯视结构示意图。\n\n[0020]图2为图1中的A1-A2处的截面图。\n\n[0021]图3为本发明实施例提供的一种显示面板中导光板结构示意图。\n\n具体实施方式\n\n[0022]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0023]本发明针对现有技术中显示面板拼接位置产生暗线，拼接位置发光的色调和正常发光区域亮度不一致，影响显示面板中显示品质的技术问题，本发明能够解决该缺陷。\n\n[0024]如图1所示，本发明实施例提供一种显示面板10，优选为OLED显示面板、mini-LED显示面板或Micro LED显示面板，显示面板10包括至少包括两块拼接设置子显示面板，本实施中的显示面板10包括第一子显示面板11、第二子显示面板12、第三子显示面板13以及第四子显示面板14，第一子显示面板11、第二子显示面板12、第三子显示面板13以及第四子显示面板14的形状优选相同，呈田字形排列，在子显示面板的间隙和边缘均设置有补光构件107，补光构件107覆盖相邻两个子显示面板的非显示区和间隙。补光构件107将显示区中的光线导入子显示面板的非显示区和间隙上出射，以实现显示面板10均匀出光，提高显示面板10的出光品质。\n\n[0025]补光构件包括全反射件173以及向全反射件173两侧延伸的导光件，全反射件173优选覆盖相邻两个子显示面板的非显示区和间隙。导光件覆盖拼接处两侧的显示面板的发光像素。全反射件173插入阵列拼接子显示面板间隙，导光件将显示区中的光线导入拼接位置和边框上，全反射件173将导入的光线从拼接位置和边框上出射，以提高显示面板10的有效显示的屏占比，实现显示面板10均匀出光，提高显示面板10的出光品质。\n\n[0026]为了更清楚展示发明点，本发明在图1中第一子显示面板11和第二子显示面板12之间剖切A1-A2截面。如图2所示，显示面板10包括柔性衬底101，柔性衬底101包括第一柔性层、阻水层和第二柔性层，第一柔性层和第二柔性层优选为黄色聚酰亚胺，阻水层为无机绝缘材料制备而成，柔性衬底101上设置有驱动电路层102，驱动电路层102设置第一子显示面板11和第二子显示面板12，第一子显示面板11和第二子显示面板12采用独立封装设计，封装层为无机层和有机层叠加膜层，驱动电路层102将外界的驱动信号传递给第一子显示面板11和第二子显示面板12，第一子显示面板11和第二子显示面板12内均阵列有蓝色像素单元、红色像素单元或绿色像素单元中一种像素单元或组合像素单元。\n\n[0027]本实施例中柔性衬底101优选为玻璃基板或塑料基板，驱动电路层102为薄膜晶体管阵列基板，一般优选顶栅驱动薄膜晶体管，包括位于柔性衬底101上的遮光层，在遮光层上设置有缓冲层，在缓冲层上设置有对应于遮光层上方的有源层，有源层包括沟道，以及设置于沟道两侧的源极掺杂部和漏极掺杂部，有源层上设置有栅绝缘层，在栅绝缘层上设置有栅极，在栅绝缘层上设置有覆盖栅极的层间绝缘层，在层间绝缘层上设置有源极和漏极，在层间绝缘层上设置有覆盖源极和漏极的钝化层，其中，源极通过源极接触孔与有源层的源极掺杂区电性连接，漏极通过漏极接触孔与有源层的漏极掺杂区电性连接，漏极与子显示面板输入端电性连接。子显示面板均包括载体、白油层、光源和荧光层，载体与驱动电路层102中的漏极电性连接，以使光源出射蓝光、红光、绿光或白光。\n\n[0028]如图2和图3所示，补光构件17包括第一导光件171、第二导光172以及位于第一导光件171和第二导光172之间的全反射件173，第一导光件171和第二导光件172的水平长度均为1至5个发光像素的间距。第一导光件171设置有第一半透射半反射板1711，第二导光件172设置有第二半透射半反射板1721，第一半透射半反射板1711位于第一子显示面板11的边缘，第二半透射半反射板1721位于第二子显示面板12的边缘。全反射件173包括对接设置的第一全反板1731和第二全反射板1732，第一半透射半反射板1711的倾斜方向朝向第一反射板1731，第二半透射半反射板1721的倾斜方向朝向第二反射板1732。第一半透射半反射板1711上方平行设置第一全透板1712，第二半透射半反射板1721上方平行设置第二全透板1722。第一半透射半反射板1711和第二半透射半反射板1721均为聚乙烯醇薄膜，第一反射板1731和第二反射板1732均为玻璃基板，第一全透板1712和第二全透板1722均为透明聚酰亚胺薄膜。第一半透射半反射板1711、第二半透射半反射板1721、第一反射板1731和第二反射板1732的水平夹角均为锐角。第一导光件171、第二导光件172以及全反射件173内填充为透明介质，第一导光件171和第二导光件172内的透明介质的折射率大于或等于全反射件173内的透明介质的折射率。第一半透射半反射板1711和第二半透射半反射板1721发生全反射的光线均占比为20％至50％范围内，发生折反射的光线均占比为50％至70％范围内，经过半透射半反射板的反射光会射向全反射板，并再次发生全反射，从拼接处出射，拼接位置发光的色调和正常发光区域亮度一致，从而提高Micro LED显示面板中显示品质。\n\n[0029]第一导光件171和第二导光件172的截面均为直角梯形，全反射件173的截面为矩形，直角梯形的底边贴合矩形的长边上。第一导光件171和第一导光件172对称贴合在全反射件173两侧，形成一个完整的整体。本实施例中的第一半透射半反射板1711与第一反射板1731平行设置，第二半透射半反射板1721与第二反射板1732平行设置，第一反射板1731和第二反射板1732的端部沿间隙的内壁向下延伸，并填补间隙，反射板的垂直高度高于半透射半反射板的高度，第一导光件171、第二导光件172以及全反射件173内填充为透明介质，光线可以在介质内支直线传播。\n\n[0030]本实施例中的第一半透射半反射板1711、第二半透射半反射板1721、第一反射板1731和第二反射板1732的水平夹角均优选为45°，其中全透板与半透射半反射板在垂直方向形成平行四边形置于发光区；全反射板置于暗区且刚好与半透射相接。当光线垂直发射，经过夹角45°的半透射半反射板时，50％的光折射出去，另外50％的光反射到全反射板上，全反射板上把光反射出去；经过折射出去的部分光在经过全投射板时，经过折射出去，通过光路的反射折射原理可知，出射光均是垂直发出，另一侧的原理一样；因此在视觉上可消除暗区的存在，实现无缝拼接显示屏。\n\n[0031]例如光源111出射光线S1，出射光线S1经过第一半透射半反射板1711折射产生的光线S11，反射产生的光线S12，光源121出射光线S2，出射光线S2经过第二半透射半反射板1721折射产生的光线S21，反射产生的光线S22，第一子显示面板11和第二子显示面板12之间的间隙里产生光线S12和光线S22，以此消除暗区的存在，实现无缝拼接显示屏。\n\n[0032]为了实现半透射半反射板折射的光线再次垂直出射，在半透射半反射板上方平行设置有全透板，第一半透射半反射板1711上方设置有第一全透板1712，第二半透射半反射板1721上方设置有第二全透板1722，第一导光部171内设置有透明介质1713和透明介质1714，透明介质1713和透明介质1714的折射率相同，或者透明介质1713大于透明介质1714，第二导光部172内设置有透明介质1723和透明介质1724，透明介质1723和透明介质1724的折射率相同，或者透明介质1723大于透明介质1724，反射部173设置有透明介质1734和介质1733，透明介质1734均小于透明介质1713和透明介质1723，例如，光线S11和光线S21垂直出射。\n\n[0033]本实施例中半透半反射板还可以为依次层叠的玻璃基板、第一低折射率层、第一高折射率层、第二低折射率层、第二高折射率层以及第三低折射率层；第一低折射率层的材料为SiO2或MgF2；第一高折射率层的材料为Nb2O5、TiO2或ZrO2；第二低折射率层的材料为SiO2或MgF2；第二高折射率层的材料为Nb2O5、TiO2或ZrO2；第三低折射率层的材料为SiO2或MgF2，最后在半透半反射板进行镀膜处理；在另一种实施例中半透半反射板还可以为依次层叠的玻璃基板、第一高折射率层、第一低折射率层、第二高折射率层；第一高折射率层的材料为Si3N4层、Nb2O5层、TiO2层、ZrO2层中的任一层；第一低折射率层的材料为SiOxNx层、SiOX层、ZnSnO3层中的任一层；第二高折射率层的材料为Si3N4层、Nb2O5层、TiO2层、ZrO2层中的任一层；全反射板还可以为玻璃基板或者其他载体基板上经过磁控溅射工艺进行Ag镀膜的基板；全透板为可选透过率较好超白玻璃、有机玻璃的材料。\n\n[0034]在另一种实施例中第一半透射半反射板1711、第二半透射半反射板1721、第一反射板1731和第二反射板1732的水平夹角均为锐角，但是该锐角可以不为45°。通过调节第一半透射半反射板1711和第二半透射半反射板1721的水平夹角，可以将光源111出射光线S1通过第一半透射半反射板1711和第二半透射半反射板1721透射到第一子显示面板11和第二子显示面板12的非显示区中，解决第一子显示面板11和第二子显示面板12的非显示区光线不均一的问题。\n\n[0035]本发明实施例提供一种显示面板，显示面板包括阵列分布的子显示面板以及位于子显示面板间隙的补光构件，补光构件包括半透射半反射板以及全反射板，半透射半反射板靠近子显示面板边缘设置，并延伸至显示区，全反射板位于子显示面板的间隙上方，且全反射板与半透射半反射板对应设置，显示区中光源垂直发射光线，经过半透射半反射板时，约50％的光折射出去，另外50％的光反射到全反射板上，全反射板上将该反射光再次反射出去，实现了子显示面板的边框和间隙有垂直光线出射，可消除暗区的存在，实现无缝拼接显示屏，从而提高显示面板显示的均一性。\n\n[0036]综上，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及拼接显示技术领域，尤其涉及一种显示面板。\n\n背景技术\n\n[0002]微发光二极管(Micro LED)是新一代显示技术，具有自发光显示特性，相较于现有的有机发光二极管(Organic Light-Emitting Diode,OLED)技术，Micro LED显示装置具有亮度更高、发光效率更好、功耗更低的优点。\n\n[0003]Micro LED显示装置底层用正常的CMOS集成电路制造工艺制成LED显示驱动电路，然后在集成电路上制作Micro LED阵列，从而实现了微型显示屏，也就是所说的LED显示屏的缩小版，达到微米级。由于相邻的两个Micro LED拼接在一起，产生拼接位置，拼接处光线较弱、翘曲、不平整，导致Micro LED灯板在拼接位置产生暗线。\n\n[0004]综上所述，需要设计出一种新的显示面板结构，以解决现有技术中显示面板拼接位置产生暗线，拼接位置发光的色调和正常发光区域亮度不一致，影响显示面板中显示品质的技术问题。\n\n发明内容\n\n[0005]本发明实施例提供一种显示面板，能够解决现有技术中显示面板拼接位置产生暗线，拼接位置发光的色调和正常发光区域亮度不一致，影响显示面板中显示品质的技术问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明实施例提供一种显示面板，至少包括拼接设置的第一子显示面板和第二子显示面板，所述第一子显示面板和所述第二子显示面板的连接处设置有补光构件，所述补光构件包括全反射件以及向所述全反射件两侧延伸的导光件，所述导光件覆盖有发光像素，其中，所述导光件将所述发光像素出射的光线导入所述全反射件上，所述全反射件将导入光线从所述第一子显示面板和所述第二子显示面板的连接处出射。\n\n[0008]根据本发明一优选实施例，所述导光件包括第一导光件和第二导光件，所述第一导光件设置有第一半透射半反射板，所述第二导光件设置有第二半透射半反射板，所述第一半透射半反射板位于所述第一子显示面板的边缘，所述第二半透射半反射板位于所述第二子显示面板的边缘。\n\n[0009]根据本发明一优选实施例，所述全反射件包括对接设置的第一全反射板和第二全反射板，所述第一半透射半反射板的倾斜方向朝向所述第一反射板，所述第二半透射半反射板的倾斜方向朝向所述第二反射板。\n\n[0010]根据本发明一优选实施例，所述第一半透射半反射板上方平行设置第一全透板，所述第二半透射半反射板上方平行设置第二全透板。\n\n[0011]根据本发明一优选实施例，所述第一半透射半反射板和所述第二半透射半反射板均为聚乙烯醇薄膜，所述第一反射板和所述第二反射板均为玻璃基板，所述第一全透板和所述第二全透板均为透明聚酰亚胺薄膜。\n\n[0012]根据本发明一优选实施例，所述第一半透射半反射板和所述第二半透射半反射板发生全反射的光线均占比为20％至50％范围内，发生折反射的光线均占比为50％至70％范围内。\n\n[0013]根据本发明一优选实施例，所述第一半透射半反射板、所述第二半透射半反射板、所述第一反射板和所述第二反射板的水平夹角均为锐角。\n\n[0014]根据本发明一优选实施例，所述第一导光件、所述第二导光件以及所述全反射件内填充为透明介质，所述第一导光件和所述第二导光件内的透明介质的折射率大于或等于所述全反射件内的透明介质的折射率。\n\n[0015]根据本发明一优选实施例，所述导光件的水平长度均为1至5个所述发光像素的间距。\n\n[0016]根据本发明一优选实施例，所述显示面板为OLED显示面板、mini-LED显示面板或Micro LED显示面板。\n\n[0017]有益效果：本发明实施例提供一种显示面板，显示面板包括阵列分布的子显示面板以及位于子显示面板间隙的补光构件，补光构件包括半透射半反射板以及全反射板，半透射半反射板靠近子显示面板边缘设置，并延伸至显示区，全反射板位于子显示面板的间隙上方，且全反射板与半透射半反射板对应设置，显示区中光源垂直发射光线，经过半透射半反射板时，约50％的光折射出去，另外50％的光反射到全反射板上，全反射板上将该反射光再次反射出去，实现了子显示面板的边框和间隙有垂直光线出射，可消除暗区的存在，实现无缝拼接显示屏，从而提高显示面板显示的均一性。\n\n附图说明\n\n[0018]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1为本发明实施例提供的一种显示面板俯视结构示意图。\n\n[0020]图2为图1中的A1-A2处的截面图。\n\n[0021]图3为本发明实施例提供的一种显示面板中导光板结构示意图。\n\n具体实施方式\n\n[0022]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0023]本发明针对现有技术中显示面板拼接位置产生暗线，拼接位置发光的色调和正常发光区域亮度不一致，影响显示面板中显示品质的技术问题，本发明能够解决该缺陷。\n\n[0024]如图1所示，本发明实施例提供一种显示面板10，优选为OLED显示面板、mini-LED显示面板或Micro LED显示面板，显示面板10包括至少包括两块拼接设置子显示面板，本实施中的显示面板10包括第一子显示面板11、第二子显示面板12、第三子显示面板13以及第四子显示面板14，第一子显示面板11、第二子显示面板12、第三子显示面板13以及第四子显示面板14的形状优选相同，呈田字形排列，在子显示面板的间隙和边缘均设置有补光构件107，补光构件107覆盖相邻两个子显示面板的非显示区和间隙。补光构件107将显示区中的光线导入子显示面板的非显示区和间隙上出射，以实现显示面板10均匀出光，提高显示面板10的出光品质。\n\n[0025]补光构件包括全反射件173以及向全反射件173两侧延伸的导光件，全反射件173优选覆盖相邻两个子显示面板的非显示区和间隙。导光件覆盖拼接处两侧的显示面板的发光像素。全反射件173插入阵列拼接子显示面板间隙，导光件将显示区中的光线导入拼接位置和边框上，全反射件173将导入的光线从拼接位置和边框上出射，以提高显示面板10的有效显示的屏占比，实现显示面板10均匀出光，提高显示面板10的出光品质。\n\n[0026]为了更清楚展示发明点，本发明在图1中第一子显示面板11和第二子显示面板12之间剖切A1-A2截面。如图2所示，显示面板10包括柔性衬底101，柔性衬底101包括第一柔性层、阻水层和第二柔性层，第一柔性层和第二柔性层优选为黄色聚酰亚胺，阻水层为无机绝缘材料制备而成，柔性衬底101上设置有驱动电路层102，驱动电路层102设置第一子显示面板11和第二子显示面板12，第一子显示面板11和第二子显示面板12采用独立封装设计，封装层为无机层和有机层叠加膜层，驱动电路层102将外界的驱动信号传递给第一子显示面板11和第二子显示面板12，第一子显示面板11和第二子显示面板12内均阵列有蓝色像素单元、红色像素单元或绿色像素单元中一种像素单元或组合像素单元。\n\n[0027]本实施例中柔性衬底101优选为玻璃基板或塑料基板，驱动电路层102为薄膜晶体管阵列基板，一般优选顶栅驱动薄膜晶体管，包括位于柔性衬底101上的遮光层，在遮光层上设置有缓冲层，在缓冲层上设置有对应于遮光层上方的有源层，有源层包括沟道，以及设置于沟道两侧的源极掺杂部和漏极掺杂部，有源层上设置有栅绝缘层，在栅绝缘层上设置有栅极，在栅绝缘层上设置有覆盖栅极的层间绝缘层，在层间绝缘层上设置有源极和漏极，在层间绝缘层上设置有覆盖源极和漏极的钝化层，其中，源极通过源极接触孔与有源层的源极掺杂区电性连接，漏极通过漏极接触孔与有源层的漏极掺杂区电性连接，漏极与子显示面板输入端电性连接。子显示面板均包括载体、白油层、光源和荧光层，载体与驱动电路层102中的漏极电性连接，以使光源出射蓝光、红光、绿光或白光。\n\n[0028]如图2和图3所示，补光构件17包括第一导光件171、第二导光172以及位于第一导光件171和第二导光172之间的全反射件173，第一导光件171和第二导光件172的水平长度均为1至5个发光像素的间距。第一导光件171设置有第一半透射半反射板1711，第二导光件172设置有第二半透射半反射板1721，第一半透射半反射板1711位于第一子显示面板11的边缘，第二半透射半反射板1721位于第二子显示面板12的边缘。全反射件173包括对接设置的第一全反板1731和第二全反射板1732，第一半透射半反射板1711的倾斜方向朝向第一反射板1731，第二半透射半反射板1721的倾斜方向朝向第二反射板1732。第一半透射半反射板1711上方平行设置第一全透板1712，第二半透射半反射板1721上方平行设置第二全透板1722。第一半透射半反射板1711和第二半透射半反射板1721均为聚乙烯醇薄膜，第一反射板1731和第二反射板1732均为玻璃基板，第一全透板1712和第二全透板1722均为透明聚酰亚胺薄膜。第一半透射半反射板1711、第二半透射半反射板1721、第一反射板1731和第二反射板1732的水平夹角均为锐角。第一导光件171、第二导光件172以及全反射件173内填充为透明介质，第一导光件171和第二导光件172内的透明介质的折射率大于或等于全反射件173内的透明介质的折射率。第一半透射半反射板1711和第二半透射半反射板1721发生全反射的光线均占比为20％至50％范围内，发生折反射的光线均占比为50％至70％范围内，经过半透射半反射板的反射光会射向全反射板，并再次发生全反射，从拼接处出射，拼接位置发光的色调和正常发光区域亮度一致，从而提高Micro LED显示面板中显示品质。\n\n[0029]第一导光件171和第二导光件172的截面均为直角梯形，全反射件173的截面为矩形，直角梯形的底边贴合矩形的长边上。第一导光件171和第一导光件172对称贴合在全反射件173两侧，形成一个完整的整体。本实施例中的第一半透射半反射板1711与第一反射板1731平行设置，第二半透射半反射板1721与第二反射板1732平行设置，第一反射板1731和第二反射板1732的端部沿间隙的内壁向下延伸，并填补间隙，反射板的垂直高度高于半透射半反射板的高度，第一导光件171、第二导光件172以及全反射件173内填充为透明介质，光线可以在介质内支直线传播。\n\n[0030]本实施例中的第一半透射半反射板1711、第二半透射半反射板1721、第一反射板1731和第二反射板1732的水平夹角均优选为45°，其中全透板与半透射半反射板在垂直方向形成平行四边形置于发光区；全反射板置于暗区且刚好与半透射相接。当光线垂直发射，经过夹角45°的半透射半反射板时，50％的光折射出去，另外50％的光反射到全反射板上，全反射板上把光反射出去；经过折射出去的部分光在经过全投射板时，经过折射出去，通过光路的反射折射原理可知，出射光均是垂直发出，另一侧的原理一样；因此在视觉上可消除暗区的存在，实现无缝拼接显示屏。\n\n[0031]例如光源111出射光线S1，出射光线S1经过第一半透射半反射板1711折射产生的光线S11，反射产生的光线S12，光源121出射光线S2，出射光线S2经过第二半透射半反射板1721折射产生的光线S21，反射产生的光线S22，第一子显示面板11和第二子显示面板12之间的间隙里产生光线S12和光线S22，以此消除暗区的存在，实现无缝拼接显示屏。\n\n[0032]为了实现半透射半反射板折射的光线再次垂直出射，在半透射半反射板上方平行设置有全透板，第一半透射半反射板1711上方设置有第一全透板1712，第二半透射半反射板1721上方设置有第二全透板1722，第一导光部171内设置有透明介质1713和透明介质1714，透明介质1713和透明介质1714的折射率相同，或者透明介质1713大于透明介质1714，第二导光部172内设置有透明介质1723和透明介质1724，透明介质1723和透明介质1724的折射率相同，或者透明介质1723大于透明介质1724，反射部173设置有透明介质1734和介质1733，透明介质1734均小于透明介质1713和透明介质1723，例如，光线S11和光线S21垂直出射。\n\n[0033]本实施例中半透半反射板还可以为依次层叠的玻璃基板、第一低折射率层、第一高折射率层、第二低折射率层、第二高折射率层以及第三低折射率层；第一低折射率层的材料为SiO2或MgF2；第一高折射率层的材料为Nb2O5、TiO2或ZrO2；第二低折射率层的材料为SiO2或MgF2；第二高折射率层的材料为Nb2O5、TiO2或ZrO2；第三低折射率层的材料为SiO2或MgF2，最后在半透半反射板进行镀膜处理；在另一种实施例中半透半反射板还可以为依次层叠的玻璃基板、第一高折射率层、第一低折射率层、第二高折射率层；第一高折射率层的材料为Si3N4层、Nb2O5层、TiO2层、ZrO2层中的任一层；第一低折射率层的材料为SiOxNx层、SiOX层、ZnSnO3层中的任一层；第二高折射率层的材料为Si3N4层、Nb2O5层、TiO2层、ZrO2层中的任一层；全反射板还可以为玻璃基板或者其他载体基板上经过磁控溅射工艺进行Ag镀膜的基板；全透板为可选透过率较好超白玻璃、有机玻璃的材料。\n\n[0034]在另一种实施例中第一半透射半反射板1711、第二半透射半反射板1721、第一反射板1731和第二反射板1732的水平夹角均为锐角，但是该锐角可以不为45°。通过调节第一半透射半反射板1711和第二半透射半反射板1721的水平夹角，可以将光源111出射光线S1通过第一半透射半反射板1711和第二半透射半反射板1721透射到第一子显示面板11和第二子显示面板12的非显示区中，解决第一子显示面板11和第二子显示面板12的非显示区光线不均一的问题。\n\n[0035]本发明实施例提供一种显示面板，显示面板包括阵列分布的子显示面板以及位于子显示面板间隙的补光构件，补光构件包括半透射半反射板以及全反射板，半透射半反射板靠近子显示面板边缘设置，并延伸至显示区，全反射板位于子显示面板的间隙上方，且全反射板与半透射半反射板对应设置，显示区中光源垂直发射光线，经过半透射半反射板时，约50％的光折射出去，另外50％的光反射到全反射板上，全反射板上将该反射光再次反射出去，实现了子显示面板的边框和间隙有垂直光线出射，可消除暗区的存在，实现无缝拼接显示屏，从而提高显示面板显示的均一性。\n\n[0036]综上，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10883, 23937, '技术领域\n\n[0001]本申请属于显示面板技术领域，尤其涉及一种背光模组及显示装置。\n\n背景技术\n\n[0002]目前Mini-LED因在对比度上的出色表现和画质优势，Mini-LED背光技术迅速吸引了显示面板制造商开发高端产品的研发人的关注。Mini-LED背光技术是在多分区动态背光内均匀分布多颗LED实现更加精密的光学布局，更加精准的背光控制。\n\n[0003]然而，目前暂无根据显示图像调节背光每个LED的亮度的控制信号。\n\n发明内容\n\n[0004]本申请实施例提供一种背光模组及显示装置，用以解决目前暂无根据显示图像输出控制背光LED发光亮度的控制信号的问题。\n\n[0005]本申请提供一种背光模组，包括：一灯组；以及一驱动板，与所述灯组连接，所述驱动板用于向所述灯组传输控制信号；其中所述驱动板包括多个基于不同传输协议以传输控制信号的接口及驱动芯片，所述驱芯片用于根据显示图像获得用以控制所述灯组的所述控制信号，其中显示图像为通过一外部的系统板所获取的。\n\n[0006]进一步地，所述背光模组还包括：多个LVDS接口，设置在所述驱动板上，所述多个LVDS接口用于传输低电压差分信号。\n\n[0007]进一步地，所述传输协议包括：SPI协议及VBO协议。\n\n[0008]进一步地，所述接口包括基于所述VBO协议的两个输入接口和两个输出接口，所述两个输入接口和所述两个输出接口用以传输基于VBO协议的控制信号。\n\n[0009]进一步地，所述接口包括基于所述SPI协议的两个输入接口和两个输出接口，所述两个输入接口和所述两个输出接口用以传输基于SPI协议的控制信号。\n\n[0010]进一步地，所述背光模组还包括：多个供电接口，用于为所述驱动板提供工作电压。\n\n[0011]本申请还提供一种显示装置，包括上述所述的背光模组。\n\n[0012]进一步地，所述显示装置还包括：一显示面板，所述显示面板与所述灯组相对设置。\n\n[0013]进一步地，所述控制信号用于控制所述灯组，并根据所述显示图像点亮所述灯组中对应的灯光。\n\n[0014]进一步地，所述显示装置还包括：一系统板，用以板用于发送所述显示图像至所述驱动板；一控制板，用以接收从驱动板所发送的显示图像，并根据所述显示图像生成所述控制信号。\n\n[0015]本申请实施例提供一种背光模组及显示装置，通过驱动板实现将显示图像转换成控制信息，实现对Mini-LED背光的精准控制，并且所述驱动板上设置多个基于不同传输协议以传输控制信号的接口，提升整个显示装置的兼容性。此外，驱动板通过采用可编程器件而能够不断的更新，从而满足用户的需求。\n\n附图说明\n\n[0016]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其有益效果显而易见。\n\n[0017]图1为本申请一实施例提供的一种背光模组结构示意图。\n\n[0018]图2为本申请一实施例提供的一种驱动板结构示意图。\n\n[0019]图3为本申请一实施例提供的一种显示装置结构示意图。\n\n具体实施方式\n\n[0020]在具体实施方式中，下文论述的附图以及用来描述本申请公开的原理的各实施例仅用于说明，而不应解释为限制本申请公开的范围。所属领域的技术人员将理解，本申请的原理可在任何适当布置的系统中实施。将详细说明示例性实施方式，在附图中示出了这些实施方式的实例。此外，将参考附图详细描述根据示例性实施例的终端。附图中的相同附图标号指代相同的元件。\n\n[0021]本具体实施方式中使用的术语仅用来描述特定实施方式，而并不意图显示本申请的概念。除非上下文中有明确不同的意义，否则，以单数形式使用的表达涵盖复数形式的表达。在本申请说明书中，应理解，诸如“包括”、“具有”以及“含有”等术语意图说明存在本申请说明书中揭示的特征、数字、步骤、动作或其组合的可能性，而并不意图排除可存在或可添加一个或多个其他特征、数字、步骤、动作或其组合的可能性。附图中的相同参考标号指代相同部分。\n\n[0022]如图1所示，为本申请提供的背光模组结构示意图，所述背光模组包括：一灯组10及一驱动板20。\n\n[0023]所述驱动板20与所述灯组10连接，所述驱动板20用于向所述灯组10传输控制信号11。\n\n[0024]如图2所示，在本实施例中所述驱动板20包括：多个基于不同传输协议以传输控制信号11的接口及驱动芯片29。\n\n[0025]其中所述驱芯片用于根据显示图像获得用以控制所述灯组10的所述控制信号，其中显示图像为通过一外部的系统板30所获取的。\n\n[0026]其中所述传输协议包括：串行外设接口(Serial Peripheral Interface，简称SPI)协议及VBO(V-by-one)协议。\n\n[0027]需要说明的是，SPI协议有4种不同的模式，从背光模组在出厂时默认配置为其中一种模式，通信双方必须是工作在这种相同的模式下。因此可以对背光模组的SPI模式进行配置，通过CPO(时钟极性)和CPHA(时钟相位)来控制背光模组的通信模式。\n\n[0028]VBO协议是一种图像信息传输的数字接口协议标准。采用VBO传输协议的背光模组发送端与接收端的在开机阶段有严格的握手流程,遵循严格的时序控制。\n\n[0029]在本实施例中，所述SPI接口25包括基于所述SPI协议的两个输入接口和两个输出接口，所述两个输入接口和所述两个输出接口用以传输基于SPI协议的控制信号11。所述VBO接口24包括基于所述VBO协议的两个输入接口和两个输出接口，所述两个输入接口和所述两个输出接口用以传输基于VBO协议的控制信号11。由于所述驱动板20上设置多个基于不同传输协议以传输控制信号的接口，因此能够提升整个显示装置的兼容性。\n\n[0030]驱动板20还包括：多个电压差分信号接口21、电源接口22、备用接口28及flash接口27。其中所述备用接口28为12pin。\n\n[0031]多个电压差分信号(Low-Voltage Differential Signaling，简称LVDS)接口21用于传输低电压差分信号。在本实施例中，所述驱动板20上设置有4个LVDS接口。LVDS是一种低功耗、低误码率、低串扰和低辐射的差分信号技术，传输速率可以达到155Mbps以上，LVDS是采用极低的电压摆幅高速差动传输数据，可以实现点对点或一点对多点的连接。\n\n[0032]所述驱动板20还包括多个供电接口26。所述供电接口26用于为所述驱动芯片29提供工作电压。\n\n[0033]所述驱动板20可以实现以下四种模式。\n\n[0034]模式一：接收VBO信号与全局调光信号，经算法得到VBO信号与背光分区灰阶数据(控制信号)，背光分区灰阶数据经LVDS接口输出。\n\n[0035]模式二：接收VBO信号以及显示图像、全局调光信号并输出。\n\n[0036]模式三：接收电脑的DP(DisplayPort)信号，经算法处理得到VBO与控制信号并输出。\n\n[0037]模式四：应用于产品展示，接收显示图像和VBO信号，输出控制信号并以SPI格式输出。\n\n[0038]本申请实施例提供一种背光模组及显示装置，通过驱动板实现将显示图像转换成控制信息，实现对Mini-LED背光的精准控制，并且所述驱动板上设置多个基于不同传输协议以传输控制信号的接口，提升整个显示装置的兼容性。此外，驱动板通过采用可编程器件而能够不断的更新，从而满足用户的需求。\n\n[0039]如图3所示，为本申请实施例提供的显示装置结构示意图。所述显示装置包括：上述实施例中所述的背光模组、系统板30、控制板40及显示面板50。\n\n[0040]所述显示面板50与所述灯组10相对设置。所述控制信号用于控制所述灯组10，并根据所述显示图像点亮所述灯组10中对应的灯光。\n\n[0041]所述系统板30用以板用于发送所述显示图像至所述驱动板20。所述控制板40用以接收从驱动板20所发送的显示图像，并根据所述显示图像生成所述控制信号。\n\n[0042]该显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件当本实施例的显示装置采用上述实施例所述的背光模组时，其显示效果更好。\n\n[0043]本申请实施例提供一种背光模组及显示装置，通过驱动板实现将显示图像转换成控制信息，实现对Mini-LED背光的精准控制，并且所述驱动板上设置多个基于不同传输协议以传输控制信号的接口，提升整个显示装置的兼容性。此外，驱动板通过采用可编程器件而能够不断的更新，从而满足用户的需求。\n\n[0044]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0045]本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请属于显示面板技术领域，尤其涉及一种背光模组及显示装置。\n\n背景技术\n\n[0002]目前Mini-LED因在对比度上的出色表现和画质优势，Mini-LED背光技术迅速吸引了显示面板制造商开发高端产品的研发人的关注。Mini-LED背光技术是在多分区动态背光内均匀分布多颗LED实现更加精密的光学布局，更加精准的背光控制。\n\n[0003]然而，目前暂无根据显示图像调节背光每个LED的亮度的控制信号。\n\n发明内容\n\n[0004]本申请实施例提供一种背光模组及显示装置，用以解决目前暂无根据显示图像输出控制背光LED发光亮度的控制信号的问题。\n\n[0005]本申请提供一种背光模组，包括：一灯组；以及一驱动板，与所述灯组连接，所述驱动板用于向所述灯组传输控制信号；其中所述驱动板包括多个基于不同传输协议以传输控制信号的接口及驱动芯片，所述驱芯片用于根据显示图像获得用以控制所述灯组的所述控制信号，其中显示图像为通过一外部的系统板所获取的。\n\n[0006]进一步地，所述背光模组还包括：多个LVDS接口，设置在所述驱动板上，所述多个LVDS接口用于传输低电压差分信号。\n\n[0007]进一步地，所述传输协议包括：SPI协议及VBO协议。\n\n[0008]进一步地，所述接口包括基于所述VBO协议的两个输入接口和两个输出接口，所述两个输入接口和所述两个输出接口用以传输基于VBO协议的控制信号。\n\n[0009]进一步地，所述接口包括基于所述SPI协议的两个输入接口和两个输出接口，所述两个输入接口和所述两个输出接口用以传输基于SPI协议的控制信号。\n\n[0010]进一步地，所述背光模组还包括：多个供电接口，用于为所述驱动板提供工作电压。\n\n[0011]本申请还提供一种显示装置，包括上述所述的背光模组。\n\n[0012]进一步地，所述显示装置还包括：一显示面板，所述显示面板与所述灯组相对设置。\n\n[0013]进一步地，所述控制信号用于控制所述灯组，并根据所述显示图像点亮所述灯组中对应的灯光。\n\n[0014]进一步地，所述显示装置还包括：一系统板，用以板用于发送所述显示图像至所述驱动板；一控制板，用以接收从驱动板所发送的显示图像，并根据所述显示图像生成所述控制信号。\n\n[0015]本申请实施例提供一种背光模组及显示装置，通过驱动板实现将显示图像转换成控制信息，实现对Mini-LED背光的精准控制，并且所述驱动板上设置多个基于不同传输协议以传输控制信号的接口，提升整个显示装置的兼容性。此外，驱动板通过采用可编程器件而能够不断的更新，从而满足用户的需求。\n\n附图说明\n\n[0016]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其有益效果显而易见。\n\n[0017]图1为本申请一实施例提供的一种背光模组结构示意图。\n\n[0018]图2为本申请一实施例提供的一种驱动板结构示意图。\n\n[0019]图3为本申请一实施例提供的一种显示装置结构示意图。\n\n具体实施方式\n\n[0020]在具体实施方式中，下文论述的附图以及用来描述本申请公开的原理的各实施例仅用于说明，而不应解释为限制本申请公开的范围。所属领域的技术人员将理解，本申请的原理可在任何适当布置的系统中实施。将详细说明示例性实施方式，在附图中示出了这些实施方式的实例。此外，将参考附图详细描述根据示例性实施例的终端。附图中的相同附图标号指代相同的元件。\n\n[0021]本具体实施方式中使用的术语仅用来描述特定实施方式，而并不意图显示本申请的概念。除非上下文中有明确不同的意义，否则，以单数形式使用的表达涵盖复数形式的表达。在本申请说明书中，应理解，诸如“包括”、“具有”以及“含有”等术语意图说明存在本申请说明书中揭示的特征、数字、步骤、动作或其组合的可能性，而并不意图排除可存在或可添加一个或多个其他特征、数字、步骤、动作或其组合的可能性。附图中的相同参考标号指代相同部分。\n\n[0022]如图1所示，为本申请提供的背光模组结构示意图，所述背光模组包括：一灯组10及一驱动板20。\n\n[0023]所述驱动板20与所述灯组10连接，所述驱动板20用于向所述灯组10传输控制信号11。\n\n[0024]如图2所示，在本实施例中所述驱动板20包括：多个基于不同传输协议以传输控制信号11的接口及驱动芯片29。\n\n[0025]其中所述驱芯片用于根据显示图像获得用以控制所述灯组10的所述控制信号，其中显示图像为通过一外部的系统板30所获取的。\n\n[0026]其中所述传输协议包括：串行外设接口(Serial Peripheral Interface，简称SPI)协议及VBO(V-by-one)协议。\n\n[0027]需要说明的是，SPI协议有4种不同的模式，从背光模组在出厂时默认配置为其中一种模式，通信双方必须是工作在这种相同的模式下。因此可以对背光模组的SPI模式进行配置，通过CPO(时钟极性)和CPHA(时钟相位)来控制背光模组的通信模式。\n\n[0028]VBO协议是一种图像信息传输的数字接口协议标准。采用VBO传输协议的背光模组发送端与接收端的在开机阶段有严格的握手流程,遵循严格的时序控制。\n\n[0029]在本实施例中，所述SPI接口25包括基于所述SPI协议的两个输入接口和两个输出接口，所述两个输入接口和所述两个输出接口用以传输基于SPI协议的控制信号11。所述VBO接口24包括基于所述VBO协议的两个输入接口和两个输出接口，所述两个输入接口和所述两个输出接口用以传输基于VBO协议的控制信号11。由于所述驱动板20上设置多个基于不同传输协议以传输控制信号的接口，因此能够提升整个显示装置的兼容性。\n\n[0030]驱动板20还包括：多个电压差分信号接口21、电源接口22、备用接口28及flash接口27。其中所述备用接口28为12pin。\n\n[0031]多个电压差分信号(Low-Voltage Differential Signaling，简称LVDS)接口21用于传输低电压差分信号。在本实施例中，所述驱动板20上设置有4个LVDS接口。LVDS是一种低功耗、低误码率、低串扰和低辐射的差分信号技术，传输速率可以达到155Mbps以上，LVDS是采用极低的电压摆幅高速差动传输数据，可以实现点对点或一点对多点的连接。\n\n[0032]所述驱动板20还包括多个供电接口26。所述供电接口26用于为所述驱动芯片29提供工作电压。\n\n[0033]所述驱动板20可以实现以下四种模式。\n\n[0034]模式一：接收VBO信号与全局调光信号，经算法得到VBO信号与背光分区灰阶数据(控制信号)，背光分区灰阶数据经LVDS接口输出。\n\n[0035]模式二：接收VBO信号以及显示图像、全局调光信号并输出。\n\n[0036]模式三：接收电脑的DP(DisplayPort)信号，经算法处理得到VBO与控制信号并输出。\n\n[0037]模式四：应用于产品展示，接收显示图像和VBO信号，输出控制信号并以SPI格式输出。\n\n[0038]本申请实施例提供一种背光模组及显示装置，通过驱动板实现将显示图像转换成控制信息，实现对Mini-LED背光的精准控制，并且所述驱动板上设置多个基于不同传输协议以传输控制信号的接口，提升整个显示装置的兼容性。此外，驱动板通过采用可编程器件而能够不断的更新，从而满足用户的需求。\n\n[0039]如图3所示，为本申请实施例提供的显示装置结构示意图。所述显示装置包括：上述实施例中所述的背光模组、系统板30、控制板40及显示面板50。\n\n[0040]所述显示面板50与所述灯组10相对设置。所述控制信号用于控制所述灯组10，并根据所述显示图像点亮所述灯组10中对应的灯光。\n\n[0041]所述系统板30用以板用于发送所述显示图像至所述驱动板20。所述控制板40用以接收从驱动板20所发送的显示图像，并根据所述显示图像生成所述控制信号。\n\n[0042]该显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件当本实施例的显示装置采用上述实施例所述的背光模组时，其显示效果更好。\n\n[0043]本申请实施例提供一种背光模组及显示装置，通过驱动板实现将显示图像转换成控制信息，实现对Mini-LED背光的精准控制，并且所述驱动板上设置多个基于不同传输协议以传输控制信号的接口，提升整个显示装置的兼容性。此外，驱动板通过采用可编程器件而能够不断的更新，从而满足用户的需求。\n\n[0044]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0045]本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10884, 23938, '技术领域\n\n[0001]本申请涉及显示领域，特别涉及一种显示装置及其驱动方法。\n\n背景技术\n\n[0002]近年来，液晶显示器(LCD，Liquid Crystal Display)得到了广泛的应用，例如电视或个人电脑。然而，由于液晶单元(liquid crystal cell)的固有特性，LCD的反应速度较低，因此，为了增加反应速度，过驱动方法被应用在LCD上。迷你发光二极管(Mini-LED)为芯片尺寸在200微米以下的产品。市场上将Mini-LED用于LCD显示背光光源，因其可实现超薄和多分区功能，同时又采用的是小尺寸芯片，能够在显示效果上媲美有机发光二极管显示器(OLED，Organic Light Emitting Diode)产品，且在材料成本上又能够较OLED更有竞争优势而被提出使用。\n\n[0003]目前，市场上将Mini-LED用于LCD显示背光光源，然而，由于控制集成电路(IC，integrated circuit)位于LCD的一端，各Mini-LED与控制IC的距离不同，各Mini-LED与所述控制IC连接的数据走线的长度差异较大而导致阻抗差异较大，使得各所述数据走线在所述数据走线延伸的垂直方向上存在较大压差，从而导致显示装置的亮暗不均。\n\n发明内容\n\n[0004]本申请提供一种显示装置及其驱动方法，以解决现有显示装置中不同数据走线长度和阻抗差异较大，导致显示装置亮暗不均的技术问题。\n\n[0005]为解决上述问题，本申请提供的技术方案如下：\n\n[0006]本申请提供了一种显示装置，包括：\n\n[0007]显示面板，所述显示面板至少包括沿第一方向并列设置的第一显示区及第二显示区，所述第一显示区内设有第一驱动电路，所述第二显示区内设有第二驱动电路；及\n\n[0008]驱动芯片，分别与所述第一驱动电路和所述第二驱动电路连接，所述驱动芯片驱动所述第一显示区及第二显示区显示；\n\n[0009]其中，所述驱动芯片设置于所述显示面板的中部，所述第一驱动电路包括多条与所述第一方向平行的第一数据线，所述第二驱动电路包括多条与所述第一方向平行的第二数据线。\n\n[0010]在本申请实施例所提供的显示装置中，还包括一导通切换单元，所述导通切换单元分别与所述驱动芯片、所述第一驱动电路和所述第二驱动电路连接，所述驱动芯片控制所述导通切换单元的工作状态以切换与所述第一驱动电路和所述第二驱动电路的通断状态；\n\n[0011]所述驱动芯片与所述第一驱动电路和所述第二驱动电路的通断状态包括：\n\n[0012]第一状态：所述驱动芯片与所述第一驱动电路导通，且所述驱动芯片与所述第二驱动电路断开；和\n\n[0013]第二状态：所述驱动芯片与所述第二驱动电路导通，且所述驱动芯片与所述第一驱动电路断开。\n\n[0014]在本申请实施例所提供的显示装置中，所述导通切换单元包括一选择开关，所述驱动芯片分别与所述选择开关的输入端和控制端连接，所述选择开关的选择输出端选择性的与所述第一驱动电路和所述第二驱动电路连接。\n\n[0015]在本申请实施例所提供的显示装置中，所述第一驱动电路和所述第二驱动电路均包括与所述第一方向垂直的多条扫描线；\n\n[0016]在一个驱动周期内，所述驱动芯片与所述第一驱动电路和所述第二驱动电路的通断状态在所述第一状态与所述第二状态之间切换，每切换一次所述第一状态或所述第二状态，所述驱动芯片对所述第一显示区内的一条所述扫描线或所述第二显示区内的一条所述扫描线输出驱动信号，其中，所述驱动芯片每次对不同的所述扫描线输出驱动信号。\n\n[0017]在本申请实施例所提供的显示装置中，所述第一驱动电路和所述第二驱动电路共包括2k条扫描线，所述第一驱动电路包括位于所述第一显示区内的第1至第k条所述扫描线，所述第二驱动电路包括位于所述第二显示区内的第k+1至2k条所述扫描线，其中，k为正整数；所述第一显示区的扫描方向与所述第二显示区的扫描方向相同或相反。\n\n[0018]在本申请实施例所提供的显示装置中，所述第一显示区的扫描方向与所述第二显示区的扫描方向相同包括：\n\n[0019]所述第一显示区的扫描方向为第1至第k条所述扫描线，所述第二显示区的扫描方向为第k+1至第2k条所述扫描线；或\n\n[0020]所述第一显示区的扫描方向为第k至第1条所述扫描线，所述第二显示区的扫描方向为第2k至第k+1条所述扫描线。\n\n[0021]在本申请实施例所提供的显示装置中，所述第一显示区的扫描方向与所述第二显示区的扫描方向相反包括：\n\n[0022]所述第一显示区的扫描方向为第1至第k条所述扫描线，所述第二显示区的扫描方向为第2k至第k+1条所述扫描线；或\n\n[0023]所述第一显示区的扫描方向为第k至第1条所述扫描线，所述第二显示区的扫描方向为第k+1至第2k条所述扫描线。\n\n[0024]在本申请实施例所提供的显示装置中，相邻两所述扫描线中，其中一远离所述驱动芯片的所述扫描线所接收驱动信号的扫描时间大于另一靠近所述驱动芯片的所述扫描线所接收驱动信号的扫描时间。\n\n[0025]本申请还提供一种显示装置的驱动方法，所述显示装置包括：\n\n[0026]显示面板，所述显示面板至少包括沿第一方向并列设置的第一显示区及第二显示区，所述第一显示区内设有第一驱动电路，所述第二显示区内设有第二驱动电路；\n\n[0027]驱动芯片，分别与所述第一驱动电路和所述第二驱动电路连接，所述驱动芯片驱动所述第一显示区及第二显示区显示；\n\n[0028]其中，所述驱动芯片设置于所述显示面板的中部，所述第一驱动电路包括多条与所述第一方向平行的第一数据线，所述第二驱动电路包括多条与所述第一方向平行的第二数据线，所述第一驱动电路和所述第二驱动电路均包括与所述第一方向垂直的多条扫描线；\n\n[0029]所述显示装置的驱动方法包括以下步骤：\n\n[0030]在一个驱动周期内，所述驱动芯片与所述第一驱动电路和所述第二驱动电路的通断状态在所述第一状态与所述第二状态之间切换，每切换一次所述第一状态或所述第二状态，所述驱动芯片对所述第一显示区内的一条所述扫描线或所述第二显示区内的一条所述扫描线输出驱动信号，所述驱动芯片每次对不同的所述扫描线输出驱动信号；\n\n[0031]其中，所述第一状态为：所述驱动芯片与所述第一驱动电路导通，且所述驱动芯片与所述第二驱动电路断开；\n\n[0032]所述第二状态为：所述驱动芯片与所述第二驱动电路导通，且所述驱动芯片与所述第一驱动电路断开。\n\n[0033]在本申请实施例所提供显示装置的驱动方法中，每一所述驱动周期均包括一常规驱动周期和一常规空白周期，相邻两所述驱动周期之间的间隔时间为零；\n\n[0034]根据所述扫描线的数量，将所述常规驱动周期划分为多个常规驱动子区段，将所述常规空白周期划分为多个常规空白子区段，每一所述扫描线所接收驱动信号的扫描时间至少包括一所述常规驱动子区段和一所述常规空白子区段。\n\n[0035]有益效果：本申请通过将所述显示面板设置为至少包括沿第一方向并列设置的第一显示区及第二显示区，并将驱动芯片设置于所述显示面板的中部，减小了第一显示区和第二显示区中诸如Mini-LED等发光器件到所述驱动芯片的距离，使得位于第一显示区内第一数据线和位于第二显示区内第二数据线的长度更加均匀，避免诸如第一数据线和第二数据线等不同数据线由于长度差异较大导致显示装置亮暗不均的问题。\n\n附图说明\n\n[0036]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0037]图1为本申请实施例所提供显示装置一侧的结构示意图；\n\n[0038]图2为本申请实施例所提供显示装置另一侧的结构示意图；\n\n[0039]图3为本申请实施例所提供显示装置中各功能部分的连接关系示意图；\n\n[0040]图4为本申请实施例所提供显示装置的驱动方法中驱动周期与现有驱动周期的对比示意图。\n\n具体实施方式\n\n[0041]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0042]术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0043]在Mini-LED广泛应用于LCD显示背光光源的过程中，由于控制IC位于LCD的一端，各Mini-LED与控制IC的距离不同，各Mini-LED与所述控制IC连接的数据走线的长度差异较大而导致阻抗差异较大，使得各所述数据走线在所述数据走线延伸的垂直方向上存在较大压差，从而导致显示装置的亮暗不均。因此，本申请基于上述技术问题提出了一种显示装置，具体方案如下：\n\n[0044]请参阅图1～3，所述显示装置包括：\n\n[0045]显示面板100，所述显示面板100至少包括沿第一方向103并列设置的第一显示区101及第二显示区102，所述第一显示区101内设有第一驱动电路10，所述第二显示区102内设有第二驱动电路20；及\n\n[0046]驱动芯片200，分别与所述第一驱动电路10和所述第二驱动电路20连接，所述驱动芯片200驱动所述第一显示区101及第二显示区102显示；\n\n[0047]其中，所述驱动芯片200设置于所述显示面板100的中部，所述第一驱动电路10包括多条与所述第一方向103平行的第一数据线11，所述第二驱动电路20包括多条与所述第一方向103平行的第二数据线21。\n\n[0048]可以理解的是，本实施例中，通过将所述显示面板100设置为至少包括沿第一方向103并列设置的第一显示区101及第二显示区102，并将驱动芯片200设置于所述显示面板100的中部，减小了第一显示区101和第二显示区102中诸如Mini-LED等发光器件到所述驱动芯片200的距离，使得位于第一显示区101内第一数据线11和位于第二显示区102内第二数据线21的长度更加均匀，避免诸如第一数据线11和第二数据线21等不同数据线由于长度差异较大导致显示装置亮暗不均的问题；具体的，在所述第一方向103上，所述驱动芯片200到所述显示面板100两端的距离相等，在垂直于所述第一方向103的方向上，所述驱动芯片200到所述显示面板100两侧的距离相等，所述第一显示区101和所述第二显示区102的大小相等，所述第一数据线11的数量与所述第二数据线21的数量相等且一一对应，显然，相比于目前将控制IC设置于LCD端部结构中的数据走线的阻抗，本实施例中，所述第一数据线11或所述第二数据线21阻抗比现有数据走线结构的阻抗减小约二分之一。\n\n[0049]值得注意的是，所述显示面板100可以包括一基板，所述第一驱动电路10和所述第二驱动电路20还可以包括多个Mini-LED，具体的，所述驱动芯片200和所述Mini-LED分别设置于所述基板的两侧，且所述驱动芯片200位于所述显示面板100的中部。\n\n[0050]在一实施例中，请参阅图3，所述显示装置还包括一导通切换单元，所述导通切换单元分别与所述驱动芯片200、所述第一驱动电路10和所述第二驱动电路20连接，所述驱动芯片200控制所述导通切换单元的工作状态以切换与所述第一驱动电路10和所述第二驱动电路20的通断状态；\n\n[0051]所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态包括：\n\n[0052]第一状态：所述驱动芯片200与所述第一驱动电路10导通，且所述驱动芯片200与所述第二驱动电路20断开；和\n\n[0053]第二状态：所述驱动芯片200与所述第二驱动电路20导通，且所述驱动芯片200与所述第一驱动电路10断开。\n\n[0054]可以理解的是，所述导通切换单元可根据所述驱动芯片200的控制信号调整所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态，显然，当所述驱动芯片200驱动所述第一驱动电路10时，所述驱动芯片200可控制与所述第一驱动电路10和所述第二驱动电路20的通断状态切换为所述第一状态，即所述驱动芯片200与所述第一驱动电路10导通，且所述驱动芯片200与所述第二驱动电路20断开；当所述驱动芯片200驱动所述第二驱动电路20时，所述驱动芯片200可控制与所述第一驱动电路10和所述第二驱动电路20的通断状态切换为所述第二状态，即所述驱动芯片200与所述第二驱动电路20导通，且所述驱动芯片200与所述第一驱动电路10断开；通过所述导通切换单元的设置可以自由切换所述驱动芯片200输出电压的方向，当需要驱动所述第一驱动电路10时，则连通所述第一驱动电路10，同时断开所述第二驱动电路20，当需要驱动所述第而驱动电路时，则连通所述第二驱动电路20，同时断开所述第一驱动电路10，可以很好的减少不必要的漏电流，也可以节省显示装置的功耗。\n\n[0055]在一实施例中，请参阅图3，所述导通切换单元包括一选择开关210，所述驱动芯片200分别与所述选择开关210的输入端211和控制端212连接，所述选择开关210的选择输出端213可选择性的与所述第一驱动电路10和所述第二驱动电路20连接；可以理解的是，所述导通切换单元类似一可控单刀双掷开关，本实施例中，所述选择开关210根据所述控制端212所接收所述驱动芯片200发出的控制信号，控制所述选择开关210的输入端211与所述选择开关210的两选择输出端213的连通状态，以达到切换所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态的目的，具体的，所述导通切换单元还可以包括其它诸如联动形式的开关结构以实现所述第一状态与所述第二状态的切换效果，在此不再赘述。\n\n[0056]在一实施例中，请参阅图1～3，所述第一驱动电路10和所述第二驱动电路20均包括与所述第一方向103垂直的多条扫描线；\n\n[0057]在一个驱动周期内，所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态在所述第一状态与所述第二状态之间切换，每切换一次所述第一状态或所述第二状态，所述驱动芯片200对所述第一显示区101内的一条所述扫描线或所述第二显示区102内的一条所述扫描线输出驱动信号，其中，所述驱动芯片200每次对不同的所述扫描线输出驱动信号。\n\n[0058]可以理解的是，在一个驱动周期内，当所述驱动芯片200轮流对所述第一显示区101内的一条所述扫描线和所述第二显示区102内的一条所述扫描线输出驱动信号，在此过程中，所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态在所述第一状态与所述第二状态之间切换，当所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态切换至所述第一状态时，所述驱动芯片200对所述第一显示区101内的一条所述扫描线输出驱动信号，当所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态切换至所述第二状态时，所述驱动芯片200对所述第二显示区102内的一条所述扫描线输出驱动信号，在本次所述驱动周期内，所述驱动芯片200每次对不同的所述扫描线输出驱动信号，直至所有所述扫描线均被扫描则进入下一所述驱动周期。\n\n[0059]在一实施例中，请参阅图1～3，所述第一驱动电路10和所述第二驱动电路20共包括2k条扫描线，所述第一驱动电路10包括位于所述第一显示区101内的第1至第k条所述扫描线，所述第二驱动电路20包括位于所述第二显示区102内的第k+1至2k条所述扫描线，其中，k为正整数；所述第一显示区101的扫描方向与所述第二显示区102的扫描方向相同或相反。\n\n[0060]可以理解的是，所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态在所述第一状态与所述第二状态之间切换，在每一次所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态切换至所述第一状态时，所述第一显示区101的扫描方向可以是与所述第一方向103相同，也可以是与所述第一方向103相反，显然，在每一次所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态切换至所述第二状态时，所述第二显示区102的扫描方向可以是与所述第一方向103相同，也可以是与所述第一方向103相反，在此不再赘述。\n\n[0061]承上，本实施例中，所述第一显示区101的扫描方向与所述第二显示区102的扫描方向相同包括：\n\n[0062]所述第一显示区101的扫描方向为第1至第k条所述扫描线，所述第二显示区102的扫描方向为第k+1至第2k条所述扫描线；或\n\n[0063]所述第一显示区101的扫描方向为第k至第1条所述扫描线，所述第二显示区102的扫描方向为第2k至第k+1条所述扫描线。\n\n[0064]承上，本实施例中，所述第一显示区101的扫描方向与所述第二显示区102的扫描方向相反包括：\n\n[0065]所述第一显示区101的扫描方向为第1至第k条所述扫描线，所述第二显示区102的扫描方向为第2k至第k+1条所述扫描线；或\n\n[0066]所述第一显示区101的扫描方向为第k至第1条所述扫描线，所述第二显示区102的扫描方向为第k+1至第2k条所述扫描线。\n\n[0067]可以理解的是，在一个驱动周期内，当所述驱动芯片200轮流对所述第一显示区101内的一条所述扫描线和所述第二显示区102内的一条所述扫描线输出驱动信号，在此过程中，所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态在所述第一状态与所述第二状态之间切换，当所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态切换至所述第一状态时，所述驱动芯片200对所述第一显示区101内的一条所述扫描线输出驱动信号，当所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态切换至所述第二状态时，所述驱动芯片200对所述第二显示区102内的一条所述扫描线输出驱动信号，在本次所述驱动周期内，所述驱动芯片200每次对不同的所述扫描线输出驱动信号，直至所有所述扫描线均被扫描则进入下一所述驱动周期。\n\n[0068]在一实施例中，相邻两所述扫描线中，其中一远离所述驱动芯片200的所述扫描线所接收驱动信号的扫描时间大于另一靠近所述驱动芯片200的所述扫描线所接收驱动信号的扫描时间；可以理解的是，本申请实施例中，通过将驱动芯片200设置于所述显示面板100的中部，使得位于第一显示区101内第一数据线11和位于第二显示区102内第二数据线21的长度更加均匀，避免了显示装置亮暗不均的问题，虽然减少了各所述第一数据线11和/或各所述第二数据线21之间的长度和阻抗差异，但各所述第一数据线11和/或各所述第二数据线21之间的长度和阻抗差异仍然存在，为进一步提高所述显示装置显示的均匀性，\n\n[0069]本申请还提供一种显示装置的驱动方法，请参阅图1～3，所述显示装置包括：\n\n[0070]显示面板100，所述显示面板100至少包括沿第一方向103并列设置的第一显示区101及第二显示区102，所述第一显示区101内设有第一驱动电路10，所述第二显示区102内设有第二驱动电路20；\n\n[0071]驱动芯片200，分别与所述第一驱动电路10和所述第二驱动电路20连接，所述驱动芯片200驱动所述第一显示区101及第二显示区102显示；\n\n[0072]其中，所述驱动芯片200设置于所述显示面板100的中部，所述第一驱动电路10包括多条与所述第一方向103平行的第一数据线11，所述第二驱动电路20包括多条与所述第一方向103平行的第二数据线21，所述第一驱动电路10和所述第二驱动电路20均包括与所述第一方向103垂直的多条扫描线；\n\n[0073]所述显示装置的驱动方法包括以下步骤：\n\n[0074]在一个驱动周期T1内，所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态在所述第一状态与所述第二状态之间切换，每切换一次所述第一状态或所述第二状态，所述驱动芯片200对所述第一显示区101内的一条所述扫描线或所述第二显示区102内的一条所述扫描线输出驱动信号，所述驱动芯片200每次对不同的所述扫描线输出驱动信号；\n\n[0075]其中，所述第一状态为：所述驱动芯片200与所述第一驱动电路10导通，且所述驱动芯片200与所述第二驱动电路20断开；\n\n[0076]所述第二状态为：所述驱动芯片200与所述第二驱动电路20导通，且所述驱动芯片200与所述第一驱动电路10断开。\n\n[0077]可以理解的是，具体驱动过程中，在一个驱动周期T1内，所述驱动芯片200轮流对所述第一显示区101内的一条所述扫描线和所述第二显示区102内的一条所述扫描线输出驱动信号，在此过程中，所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态在所述第一状态与所述第二状态之间切换，当所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态切换至所述第一状态时，所述驱动芯片200对所述第一显示区101内的一条所述扫描线输出驱动信号，当所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态切换至所述第二状态时，所述驱动芯片200对所述第二显示区102内的一条所述扫描线输出驱动信号，在本次所述驱动周期T1内，所述驱动芯片200每次对不同的所述扫描线输出驱动信号，直至所有所述扫描线均被扫描则进入下一所述驱动周期T1；具体的，请参阅图3，可以通过一所述导通切换单元实现所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态的切换，所述导通切换单元可根据所述驱动芯片200的控制信号调整所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态，显然，当所述驱动芯片200驱动所述第一驱动电路10时，所述驱动芯片200可控制与所述第一驱动电路10和所述第二驱动电路20的通断状态切换为所述第一状态，即所述驱动芯片200与所述第一驱动电路10导通，且所述驱动芯片200与所述第二驱动电路20断开；当所述驱动芯片200驱动所述第二驱动电路20时，所述驱动芯片200可控制与所述第一驱动电路10和所述第二驱动电路20的通断状态切换为所述第二状态，即所述驱动芯片200与所述第二驱动电路20导通，且所述驱动芯片200与所述第一驱动电路10断开；通过所述导通切换单元的设置可以自由切换所述驱动芯片200输出电压的方向，当需要驱动所述第一驱动电路10时，则连通所述第一驱动电路10，同时断开所述第二驱动电路20，当需要驱动所述第而驱动电路时，则连通所述第二驱动电路20，同时断开所述第一驱动电路10，可以很好的减少不必要的漏电流，也可以节省显示装置的功耗。\n\n[0078]在一实施例中，请参阅图4，每一所述驱动周期T1均包括一常规驱动周期T2和一常规空白周期T3，相邻两所述驱动周期T1之间的间隔时间为零；\n\n[0079]根据所述扫描线的数量，将所述常规驱动周期T2划分为多个常规驱动子区段，将所述常规空白周期T3划分为多个常规空白子区段，每一所述扫描线所接收驱动信号的扫描时间至少包括一所述常规驱动子区段和一所述常规空白子区段。\n\n[0080]可以理解的是，在常规的驱动方法中，相邻两常规驱动周期T2之间会设有一常规空白周期T3，也即在每一次所述常规驱动周期T2对各扫描走线完成扫描后，会有一常规空白周期T3作为间隔，本实施例中，所述驱动周期T1包括一所述常规驱动周期T2和一所述常规空白周期T3，也即是所述驱动周期T1相比于所述常规驱动周期T2的时间多了一所述常规空白周期T3，增加了整体的扫描时间，在一实施例中，所述扫描线的数量可以为2k条，所述常规空白周期T3可以对应划分为2k个常规空白子区段分别增加到各所述扫描线的扫描时间中，提高了每条扫描线的扫描时间，达到了更好的充电效果。\n\n[0081]本申请通过将所述显示面板100设置为至少包括沿第一方向103并列设置的第一显示区101及第二显示区102，并将驱动芯片200设置于所述显示面板100的中部，减小了第一显示区101和第二显示区102中诸如Mini-LED等发光器件到所述驱动芯片200的距离，使得位于第一显示区101内第一数据线11和位于第二显示区102内第二数据线21的长度更加均匀，避免诸如第一数据线11和第二数据线21等不同数据线由于长度差异较大导致显示装置亮暗不均的问题。\n\n[0082]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0083]以上对本申请实施例所提供的一种显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示领域，特别涉及一种显示装置及其驱动方法。\n\n背景技术\n\n[0002]近年来，液晶显示器(LCD，Liquid Crystal Display)得到了广泛的应用，例如电视或个人电脑。然而，由于液晶单元(liquid crystal cell)的固有特性，LCD的反应速度较低，因此，为了增加反应速度，过驱动方法被应用在LCD上。迷你发光二极管(Mini-LED)为芯片尺寸在200微米以下的产品。市场上将Mini-LED用于LCD显示背光光源，因其可实现超薄和多分区功能，同时又采用的是小尺寸芯片，能够在显示效果上媲美有机发光二极管显示器(OLED，Organic Light Emitting Diode)产品，且在材料成本上又能够较OLED更有竞争优势而被提出使用。\n\n[0003]目前，市场上将Mini-LED用于LCD显示背光光源，然而，由于控制集成电路(IC，integrated circuit)位于LCD的一端，各Mini-LED与控制IC的距离不同，各Mini-LED与所述控制IC连接的数据走线的长度差异较大而导致阻抗差异较大，使得各所述数据走线在所述数据走线延伸的垂直方向上存在较大压差，从而导致显示装置的亮暗不均。\n\n发明内容\n\n[0004]本申请提供一种显示装置及其驱动方法，以解决现有显示装置中不同数据走线长度和阻抗差异较大，导致显示装置亮暗不均的技术问题。\n\n[0005]为解决上述问题，本申请提供的技术方案如下：\n\n[0006]本申请提供了一种显示装置，包括：\n\n[0007]显示面板，所述显示面板至少包括沿第一方向并列设置的第一显示区及第二显示区，所述第一显示区内设有第一驱动电路，所述第二显示区内设有第二驱动电路；及\n\n[0008]驱动芯片，分别与所述第一驱动电路和所述第二驱动电路连接，所述驱动芯片驱动所述第一显示区及第二显示区显示；\n\n[0009]其中，所述驱动芯片设置于所述显示面板的中部，所述第一驱动电路包括多条与所述第一方向平行的第一数据线，所述第二驱动电路包括多条与所述第一方向平行的第二数据线。\n\n[0010]在本申请实施例所提供的显示装置中，还包括一导通切换单元，所述导通切换单元分别与所述驱动芯片、所述第一驱动电路和所述第二驱动电路连接，所述驱动芯片控制所述导通切换单元的工作状态以切换与所述第一驱动电路和所述第二驱动电路的通断状态；\n\n[0011]所述驱动芯片与所述第一驱动电路和所述第二驱动电路的通断状态包括：\n\n[0012]第一状态：所述驱动芯片与所述第一驱动电路导通，且所述驱动芯片与所述第二驱动电路断开；和\n\n[0013]第二状态：所述驱动芯片与所述第二驱动电路导通，且所述驱动芯片与所述第一驱动电路断开。\n\n[0014]在本申请实施例所提供的显示装置中，所述导通切换单元包括一选择开关，所述驱动芯片分别与所述选择开关的输入端和控制端连接，所述选择开关的选择输出端选择性的与所述第一驱动电路和所述第二驱动电路连接。\n\n[0015]在本申请实施例所提供的显示装置中，所述第一驱动电路和所述第二驱动电路均包括与所述第一方向垂直的多条扫描线；\n\n[0016]在一个驱动周期内，所述驱动芯片与所述第一驱动电路和所述第二驱动电路的通断状态在所述第一状态与所述第二状态之间切换，每切换一次所述第一状态或所述第二状态，所述驱动芯片对所述第一显示区内的一条所述扫描线或所述第二显示区内的一条所述扫描线输出驱动信号，其中，所述驱动芯片每次对不同的所述扫描线输出驱动信号。\n\n[0017]在本申请实施例所提供的显示装置中，所述第一驱动电路和所述第二驱动电路共包括2k条扫描线，所述第一驱动电路包括位于所述第一显示区内的第1至第k条所述扫描线，所述第二驱动电路包括位于所述第二显示区内的第k+1至2k条所述扫描线，其中，k为正整数；所述第一显示区的扫描方向与所述第二显示区的扫描方向相同或相反。\n\n[0018]在本申请实施例所提供的显示装置中，所述第一显示区的扫描方向与所述第二显示区的扫描方向相同包括：\n\n[0019]所述第一显示区的扫描方向为第1至第k条所述扫描线，所述第二显示区的扫描方向为第k+1至第2k条所述扫描线；或\n\n[0020]所述第一显示区的扫描方向为第k至第1条所述扫描线，所述第二显示区的扫描方向为第2k至第k+1条所述扫描线。\n\n[0021]在本申请实施例所提供的显示装置中，所述第一显示区的扫描方向与所述第二显示区的扫描方向相反包括：\n\n[0022]所述第一显示区的扫描方向为第1至第k条所述扫描线，所述第二显示区的扫描方向为第2k至第k+1条所述扫描线；或\n\n[0023]所述第一显示区的扫描方向为第k至第1条所述扫描线，所述第二显示区的扫描方向为第k+1至第2k条所述扫描线。\n\n[0024]在本申请实施例所提供的显示装置中，相邻两所述扫描线中，其中一远离所述驱动芯片的所述扫描线所接收驱动信号的扫描时间大于另一靠近所述驱动芯片的所述扫描线所接收驱动信号的扫描时间。\n\n[0025]本申请还提供一种显示装置的驱动方法，所述显示装置包括：\n\n[0026]显示面板，所述显示面板至少包括沿第一方向并列设置的第一显示区及第二显示区，所述第一显示区内设有第一驱动电路，所述第二显示区内设有第二驱动电路；\n\n[0027]驱动芯片，分别与所述第一驱动电路和所述第二驱动电路连接，所述驱动芯片驱动所述第一显示区及第二显示区显示；\n\n[0028]其中，所述驱动芯片设置于所述显示面板的中部，所述第一驱动电路包括多条与所述第一方向平行的第一数据线，所述第二驱动电路包括多条与所述第一方向平行的第二数据线，所述第一驱动电路和所述第二驱动电路均包括与所述第一方向垂直的多条扫描线；\n\n[0029]所述显示装置的驱动方法包括以下步骤：\n\n[0030]在一个驱动周期内，所述驱动芯片与所述第一驱动电路和所述第二驱动电路的通断状态在所述第一状态与所述第二状态之间切换，每切换一次所述第一状态或所述第二状态，所述驱动芯片对所述第一显示区内的一条所述扫描线或所述第二显示区内的一条所述扫描线输出驱动信号，所述驱动芯片每次对不同的所述扫描线输出驱动信号；\n\n[0031]其中，所述第一状态为：所述驱动芯片与所述第一驱动电路导通，且所述驱动芯片与所述第二驱动电路断开；\n\n[0032]所述第二状态为：所述驱动芯片与所述第二驱动电路导通，且所述驱动芯片与所述第一驱动电路断开。\n\n[0033]在本申请实施例所提供显示装置的驱动方法中，每一所述驱动周期均包括一常规驱动周期和一常规空白周期，相邻两所述驱动周期之间的间隔时间为零；\n\n[0034]根据所述扫描线的数量，将所述常规驱动周期划分为多个常规驱动子区段，将所述常规空白周期划分为多个常规空白子区段，每一所述扫描线所接收驱动信号的扫描时间至少包括一所述常规驱动子区段和一所述常规空白子区段。\n\n[0035]有益效果：本申请通过将所述显示面板设置为至少包括沿第一方向并列设置的第一显示区及第二显示区，并将驱动芯片设置于所述显示面板的中部，减小了第一显示区和第二显示区中诸如Mini-LED等发光器件到所述驱动芯片的距离，使得位于第一显示区内第一数据线和位于第二显示区内第二数据线的长度更加均匀，避免诸如第一数据线和第二数据线等不同数据线由于长度差异较大导致显示装置亮暗不均的问题。\n\n附图说明\n\n[0036]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0037]图1为本申请实施例所提供显示装置一侧的结构示意图；\n\n[0038]图2为本申请实施例所提供显示装置另一侧的结构示意图；\n\n[0039]图3为本申请实施例所提供显示装置中各功能部分的连接关系示意图；\n\n[0040]图4为本申请实施例所提供显示装置的驱动方法中驱动周期与现有驱动周期的对比示意图。\n\n具体实施方式\n\n[0041]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0042]术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0043]在Mini-LED广泛应用于LCD显示背光光源的过程中，由于控制IC位于LCD的一端，各Mini-LED与控制IC的距离不同，各Mini-LED与所述控制IC连接的数据走线的长度差异较大而导致阻抗差异较大，使得各所述数据走线在所述数据走线延伸的垂直方向上存在较大压差，从而导致显示装置的亮暗不均。因此，本申请基于上述技术问题提出了一种显示装置，具体方案如下：\n\n[0044]请参阅图1～3，所述显示装置包括：\n\n[0045]显示面板100，所述显示面板100至少包括沿第一方向103并列设置的第一显示区101及第二显示区102，所述第一显示区101内设有第一驱动电路10，所述第二显示区102内设有第二驱动电路20；及\n\n[0046]驱动芯片200，分别与所述第一驱动电路10和所述第二驱动电路20连接，所述驱动芯片200驱动所述第一显示区101及第二显示区102显示；\n\n[0047]其中，所述驱动芯片200设置于所述显示面板100的中部，所述第一驱动电路10包括多条与所述第一方向103平行的第一数据线11，所述第二驱动电路20包括多条与所述第一方向103平行的第二数据线21。\n\n[0048]可以理解的是，本实施例中，通过将所述显示面板100设置为至少包括沿第一方向103并列设置的第一显示区101及第二显示区102，并将驱动芯片200设置于所述显示面板100的中部，减小了第一显示区101和第二显示区102中诸如Mini-LED等发光器件到所述驱动芯片200的距离，使得位于第一显示区101内第一数据线11和位于第二显示区102内第二数据线21的长度更加均匀，避免诸如第一数据线11和第二数据线21等不同数据线由于长度差异较大导致显示装置亮暗不均的问题；具体的，在所述第一方向103上，所述驱动芯片200到所述显示面板100两端的距离相等，在垂直于所述第一方向103的方向上，所述驱动芯片200到所述显示面板100两侧的距离相等，所述第一显示区101和所述第二显示区102的大小相等，所述第一数据线11的数量与所述第二数据线21的数量相等且一一对应，显然，相比于目前将控制IC设置于LCD端部结构中的数据走线的阻抗，本实施例中，所述第一数据线11或所述第二数据线21阻抗比现有数据走线结构的阻抗减小约二分之一。\n\n[0049]值得注意的是，所述显示面板100可以包括一基板，所述第一驱动电路10和所述第二驱动电路20还可以包括多个Mini-LED，具体的，所述驱动芯片200和所述Mini-LED分别设置于所述基板的两侧，且所述驱动芯片200位于所述显示面板100的中部。\n\n[0050]在一实施例中，请参阅图3，所述显示装置还包括一导通切换单元，所述导通切换单元分别与所述驱动芯片200、所述第一驱动电路10和所述第二驱动电路20连接，所述驱动芯片200控制所述导通切换单元的工作状态以切换与所述第一驱动电路10和所述第二驱动电路20的通断状态；\n\n[0051]所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态包括：\n\n[0052]第一状态：所述驱动芯片200与所述第一驱动电路10导通，且所述驱动芯片200与所述第二驱动电路20断开；和\n\n[0053]第二状态：所述驱动芯片200与所述第二驱动电路20导通，且所述驱动芯片200与所述第一驱动电路10断开。\n\n[0054]可以理解的是，所述导通切换单元可根据所述驱动芯片200的控制信号调整所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态，显然，当所述驱动芯片200驱动所述第一驱动电路10时，所述驱动芯片200可控制与所述第一驱动电路10和所述第二驱动电路20的通断状态切换为所述第一状态，即所述驱动芯片200与所述第一驱动电路10导通，且所述驱动芯片200与所述第二驱动电路20断开；当所述驱动芯片200驱动所述第二驱动电路20时，所述驱动芯片200可控制与所述第一驱动电路10和所述第二驱动电路20的通断状态切换为所述第二状态，即所述驱动芯片200与所述第二驱动电路20导通，且所述驱动芯片200与所述第一驱动电路10断开；通过所述导通切换单元的设置可以自由切换所述驱动芯片200输出电压的方向，当需要驱动所述第一驱动电路10时，则连通所述第一驱动电路10，同时断开所述第二驱动电路20，当需要驱动所述第而驱动电路时，则连通所述第二驱动电路20，同时断开所述第一驱动电路10，可以很好的减少不必要的漏电流，也可以节省显示装置的功耗。\n\n[0055]在一实施例中，请参阅图3，所述导通切换单元包括一选择开关210，所述驱动芯片200分别与所述选择开关210的输入端211和控制端212连接，所述选择开关210的选择输出端213可选择性的与所述第一驱动电路10和所述第二驱动电路20连接；可以理解的是，所述导通切换单元类似一可控单刀双掷开关，本实施例中，所述选择开关210根据所述控制端212所接收所述驱动芯片200发出的控制信号，控制所述选择开关210的输入端211与所述选择开关210的两选择输出端213的连通状态，以达到切换所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态的目的，具体的，所述导通切换单元还可以包括其它诸如联动形式的开关结构以实现所述第一状态与所述第二状态的切换效果，在此不再赘述。\n\n[0056]在一实施例中，请参阅图1～3，所述第一驱动电路10和所述第二驱动电路20均包括与所述第一方向103垂直的多条扫描线；\n\n[0057]在一个驱动周期内，所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态在所述第一状态与所述第二状态之间切换，每切换一次所述第一状态或所述第二状态，所述驱动芯片200对所述第一显示区101内的一条所述扫描线或所述第二显示区102内的一条所述扫描线输出驱动信号，其中，所述驱动芯片200每次对不同的所述扫描线输出驱动信号。\n\n[0058]可以理解的是，在一个驱动周期内，当所述驱动芯片200轮流对所述第一显示区101内的一条所述扫描线和所述第二显示区102内的一条所述扫描线输出驱动信号，在此过程中，所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态在所述第一状态与所述第二状态之间切换，当所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态切换至所述第一状态时，所述驱动芯片200对所述第一显示区101内的一条所述扫描线输出驱动信号，当所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态切换至所述第二状态时，所述驱动芯片200对所述第二显示区102内的一条所述扫描线输出驱动信号，在本次所述驱动周期内，所述驱动芯片200每次对不同的所述扫描线输出驱动信号，直至所有所述扫描线均被扫描则进入下一所述驱动周期。\n\n[0059]在一实施例中，请参阅图1～3，所述第一驱动电路10和所述第二驱动电路20共包括2k条扫描线，所述第一驱动电路10包括位于所述第一显示区101内的第1至第k条所述扫描线，所述第二驱动电路20包括位于所述第二显示区102内的第k+1至2k条所述扫描线，其中，k为正整数；所述第一显示区101的扫描方向与所述第二显示区102的扫描方向相同或相反。\n\n[0060]可以理解的是，所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态在所述第一状态与所述第二状态之间切换，在每一次所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态切换至所述第一状态时，所述第一显示区101的扫描方向可以是与所述第一方向103相同，也可以是与所述第一方向103相反，显然，在每一次所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态切换至所述第二状态时，所述第二显示区102的扫描方向可以是与所述第一方向103相同，也可以是与所述第一方向103相反，在此不再赘述。\n\n[0061]承上，本实施例中，所述第一显示区101的扫描方向与所述第二显示区102的扫描方向相同包括：\n\n[0062]所述第一显示区101的扫描方向为第1至第k条所述扫描线，所述第二显示区102的扫描方向为第k+1至第2k条所述扫描线；或\n\n[0063]所述第一显示区101的扫描方向为第k至第1条所述扫描线，所述第二显示区102的扫描方向为第2k至第k+1条所述扫描线。\n\n[0064]承上，本实施例中，所述第一显示区101的扫描方向与所述第二显示区102的扫描方向相反包括：\n\n[0065]所述第一显示区101的扫描方向为第1至第k条所述扫描线，所述第二显示区102的扫描方向为第2k至第k+1条所述扫描线；或\n\n[0066]所述第一显示区101的扫描方向为第k至第1条所述扫描线，所述第二显示区102的扫描方向为第k+1至第2k条所述扫描线。\n\n[0067]可以理解的是，在一个驱动周期内，当所述驱动芯片200轮流对所述第一显示区101内的一条所述扫描线和所述第二显示区102内的一条所述扫描线输出驱动信号，在此过程中，所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态在所述第一状态与所述第二状态之间切换，当所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态切换至所述第一状态时，所述驱动芯片200对所述第一显示区101内的一条所述扫描线输出驱动信号，当所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态切换至所述第二状态时，所述驱动芯片200对所述第二显示区102内的一条所述扫描线输出驱动信号，在本次所述驱动周期内，所述驱动芯片200每次对不同的所述扫描线输出驱动信号，直至所有所述扫描线均被扫描则进入下一所述驱动周期。\n\n[0068]在一实施例中，相邻两所述扫描线中，其中一远离所述驱动芯片200的所述扫描线所接收驱动信号的扫描时间大于另一靠近所述驱动芯片200的所述扫描线所接收驱动信号的扫描时间；可以理解的是，本申请实施例中，通过将驱动芯片200设置于所述显示面板100的中部，使得位于第一显示区101内第一数据线11和位于第二显示区102内第二数据线21的长度更加均匀，避免了显示装置亮暗不均的问题，虽然减少了各所述第一数据线11和/或各所述第二数据线21之间的长度和阻抗差异，但各所述第一数据线11和/或各所述第二数据线21之间的长度和阻抗差异仍然存在，为进一步提高所述显示装置显示的均匀性，\n\n[0069]本申请还提供一种显示装置的驱动方法，请参阅图1～3，所述显示装置包括：\n\n[0070]显示面板100，所述显示面板100至少包括沿第一方向103并列设置的第一显示区101及第二显示区102，所述第一显示区101内设有第一驱动电路10，所述第二显示区102内设有第二驱动电路20；\n\n[0071]驱动芯片200，分别与所述第一驱动电路10和所述第二驱动电路20连接，所述驱动芯片200驱动所述第一显示区101及第二显示区102显示；\n\n[0072]其中，所述驱动芯片200设置于所述显示面板100的中部，所述第一驱动电路10包括多条与所述第一方向103平行的第一数据线11，所述第二驱动电路20包括多条与所述第一方向103平行的第二数据线21，所述第一驱动电路10和所述第二驱动电路20均包括与所述第一方向103垂直的多条扫描线；\n\n[0073]所述显示装置的驱动方法包括以下步骤：\n\n[0074]在一个驱动周期T1内，所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态在所述第一状态与所述第二状态之间切换，每切换一次所述第一状态或所述第二状态，所述驱动芯片200对所述第一显示区101内的一条所述扫描线或所述第二显示区102内的一条所述扫描线输出驱动信号，所述驱动芯片200每次对不同的所述扫描线输出驱动信号；\n\n[0075]其中，所述第一状态为：所述驱动芯片200与所述第一驱动电路10导通，且所述驱动芯片200与所述第二驱动电路20断开；\n\n[0076]所述第二状态为：所述驱动芯片200与所述第二驱动电路20导通，且所述驱动芯片200与所述第一驱动电路10断开。\n\n[0077]可以理解的是，具体驱动过程中，在一个驱动周期T1内，所述驱动芯片200轮流对所述第一显示区101内的一条所述扫描线和所述第二显示区102内的一条所述扫描线输出驱动信号，在此过程中，所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态在所述第一状态与所述第二状态之间切换，当所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态切换至所述第一状态时，所述驱动芯片200对所述第一显示区101内的一条所述扫描线输出驱动信号，当所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态切换至所述第二状态时，所述驱动芯片200对所述第二显示区102内的一条所述扫描线输出驱动信号，在本次所述驱动周期T1内，所述驱动芯片200每次对不同的所述扫描线输出驱动信号，直至所有所述扫描线均被扫描则进入下一所述驱动周期T1；具体的，请参阅图3，可以通过一所述导通切换单元实现所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态的切换，所述导通切换单元可根据所述驱动芯片200的控制信号调整所述驱动芯片200与所述第一驱动电路10和所述第二驱动电路20的通断状态，显然，当所述驱动芯片200驱动所述第一驱动电路10时，所述驱动芯片200可控制与所述第一驱动电路10和所述第二驱动电路20的通断状态切换为所述第一状态，即所述驱动芯片200与所述第一驱动电路10导通，且所述驱动芯片200与所述第二驱动电路20断开；当所述驱动芯片200驱动所述第二驱动电路20时，所述驱动芯片200可控制与所述第一驱动电路10和所述第二驱动电路20的通断状态切换为所述第二状态，即所述驱动芯片200与所述第二驱动电路20导通，且所述驱动芯片200与所述第一驱动电路10断开；通过所述导通切换单元的设置可以自由切换所述驱动芯片200输出电压的方向，当需要驱动所述第一驱动电路10时，则连通所述第一驱动电路10，同时断开所述第二驱动电路20，当需要驱动所述第而驱动电路时，则连通所述第二驱动电路20，同时断开所述第一驱动电路10，可以很好的减少不必要的漏电流，也可以节省显示装置的功耗。\n\n[0078]在一实施例中，请参阅图4，每一所述驱动周期T1均包括一常规驱动周期T2和一常规空白周期T3，相邻两所述驱动周期T1之间的间隔时间为零；\n\n[0079]根据所述扫描线的数量，将所述常规驱动周期T2划分为多个常规驱动子区段，将所述常规空白周期T3划分为多个常规空白子区段，每一所述扫描线所接收驱动信号的扫描时间至少包括一所述常规驱动子区段和一所述常规空白子区段。\n\n[0080]可以理解的是，在常规的驱动方法中，相邻两常规驱动周期T2之间会设有一常规空白周期T3，也即在每一次所述常规驱动周期T2对各扫描走线完成扫描后，会有一常规空白周期T3作为间隔，本实施例中，所述驱动周期T1包括一所述常规驱动周期T2和一所述常规空白周期T3，也即是所述驱动周期T1相比于所述常规驱动周期T2的时间多了一所述常规空白周期T3，增加了整体的扫描时间，在一实施例中，所述扫描线的数量可以为2k条，所述常规空白周期T3可以对应划分为2k个常规空白子区段分别增加到各所述扫描线的扫描时间中，提高了每条扫描线的扫描时间，达到了更好的充电效果。\n\n[0081]本申请通过将所述显示面板100设置为至少包括沿第一方向103并列设置的第一显示区101及第二显示区102，并将驱动芯片200设置于所述显示面板100的中部，减小了第一显示区101和第二显示区102中诸如Mini-LED等发光器件到所述驱动芯片200的距离，使得位于第一显示区101内第一数据线11和位于第二显示区102内第二数据线21的长度更加均匀，避免诸如第一数据线11和第二数据线21等不同数据线由于长度差异较大导致显示装置亮暗不均的问题。\n\n[0082]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0083]以上对本申请实施例所提供的一种显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10885, 23939, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种分体式背板及显示装置。\n\n背景技术\n\n[0002]现有MiniLED显示装置的背板为分体式结构，如图1所示，图1为现有技术中背板的机构示意图，背板1由上背板11和下背板12组成，上背板11和下背板12的正面贴附有多块分体式的MiniLED玻璃灯板。分体式背板的下背板12背面设有补强结构，为考虑美观因素，上背板11背面为平坦表面设计。当从分体式背板两个长边的a、b、c、d四个抬取位抬取贴附有MiniLED玻璃灯板的背板1时，挤压应力由上背板11的侧边向中间部分聚集，使得上背板11贴附有MiniLED玻璃灯板的中间部分形变量最大。当从分体式背板的两个短边的e、f、g、h四个抬取为抬取背板1时，挤压应力同样会由上背板11的侧边向中间部分聚集，使得上背板11贴附有MiniLED玻璃灯板的中间部分形变量最大。MiniLED玻璃灯板属于易碎品，背板发生较大的形变时会挤压MiniLED玻璃灯板，使得各MiniLED玻璃灯板之间相互碰撞，增加MiniLED玻璃灯板破碎的风险。故，有必要提供一种分体式背板及显示装置来改善这一缺陷。\n\n发明内容\n\n[0003]本申请实施例提供一种分体式背板及显示装置，用于解决现有分体式背板由于上背板形变较大导致玻璃灯板之间相互碰撞并发生破碎的问题。\n\n[0004]本申请实施例提供一种分体式背板，包括相互连接的上背板和下背板，所述分体式背板包括用于承载MiniLED灯板的承载面和位于所述承载面相反一侧的背面，所述上背板和所述下背板的背面均设有加强筋。\n\n[0005]根据本申请一实施例，所述加强筋包括多条间隔设置于所述上背板背面的第一加强筋，所述第一加强筋由所述上背板远离所述下背板的一侧延伸至所述上背板靠近所述下背板的一侧。\n\n[0006]根据本申请一实施例，多条所述第一加强筋之间相互平行，相邻两条所述第一加强筋之间的距离相等。\n\n[0007]根据本申请一实施例，多条所述第一加强筋之间相互平行，相邻两条所述第一加强筋之间的距离沿垂直于所述第一加强筋的方向由所述上背板两侧向中间渐次递减。\n\n[0008]根据本申请一实施例，所述加强筋还包括两条间隔设置于所述上背板背面的第二加强筋，所述第二加强筋分别位于所述上背板远离所述下背板一侧边缘和所述上背板靠近所述下背板一侧边缘，两条所述第二加强筋分别连接所述第一加强筋的两端。\n\n[0009]根据本申请一实施例，所述加强筋还包括至少两条间隔设置的第二加强筋，所述第二加强筋与所述第一加强筋交叉连接。\n\n[0010]根据本申请一实施例，所述上背板靠近所述下背板的一侧设有卡扣，所述下背板靠近所述上背板的一侧设有与所述卡扣对应的卡槽。\n\n[0011]根据本申请一实施例，所述分体式背板的背面还设有加强铝挤，所述加强铝挤设置于所述上背板和所述下背板的连接处并分别与所述下背板和所述下背板固定连接。\n\n[0012]根据本申请一实施例，所述上背板和所述下背板的背面均设有通孔，所述加强铝挤通过螺栓分别与所述上背板和所述下背板固定连接。\n\n[0013]本申请实施例还提供一种显示装置，包括显示面板、MiniLED光源以及如上述的分体式背板，所述MiniLED光源包括至少一块MiniLED灯板，所述MiniLED光源设置于所述分体式背板的承载面上，所述显示面板设置于所述分体式背板上。\n\n[0014]本申请实施例的有益效果：本申请实施例通过在上背板和下背板设计加强筋，以此加强上背板和下背板的强度和刚度，减少上背板在抬取过程中的形变量，从而减小MiniLED灯板之间碰撞的几率，降低MiniLED灯板发生破碎的风险。\n\n附图说明\n\n[0015]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0016]图1为现有技术的分体式背板的结构示意图；\n\n[0017]图2为本申请实施例提供的第一种分体式背板的结构示意图；\n\n[0018]图3为本申请实施例提供的第二种分体式背板的结构示意图；\n\n[0019]图4为本申请实施例提供的第三种分体式背板的结构示意图；\n\n[0020]图5为本申请实施例提供的显示装置的结构示意图。\n\n具体实施方式\n\n[0021]以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。\n\n[0022]下面结合附图和具体实施例对本申请做进一步的说明。\n\n[0023]本申请实施例提供一种分体式背板，下面结合图2进行详细说明。如图2所示，图2为本申请实施例提供的分体式背板2的背面结构示意图，所述分体式背板2包括相互连接的上背板21和下背板22，分体式背板2包括用于承载MiniLED灯板的承载面和位于承载面相反一侧的背面，上背板21的背面设有加强筋23。\n\n[0024]具体的，以上背板21为例进行说明。加强筋23包括多条间隔设置的第一加强筋231，第一加强筋231由上背板21远离下背板22的一侧边缘延伸至上背板21靠近下背板22的一侧边缘，并分别与上背板21的上下两侧边缘相交。当从图1所示的a、b、c、d四个抬取位抬取贴附有MiniLED灯板的背板2时，多条沿竖直方向延伸的第一加强筋231可以防止挤压应力由上背板21远离下背板22一侧的边缘向上背板21贴附有MiniLED灯板的中间部分集中，以此在分体式背板厚度不便的情况下，有效提升上背板21整体的强度和刚性，减少上背板21在抬取过程中或者受到外力的作用下贴附有MiniLED灯板的中间部分的形变量，从而减小MiniLED灯板之间碰撞的几率，降低MiniLED灯板发生破碎的风险。\n\n[0025]进一步的，上背板21中多条所述第一加强筋231之间相互平行设置，并且相邻两条第一加强筋231之间的距离沿垂直于第一加强筋231的方向由上背板21的左右两侧向中间渐次递减，从而使得上背板231位于中间部分的第一加强筋231的密度高于位于两侧第一加强筋231的密度，以提高上背板21位于中间部分的强度和刚性，减小上背板231中间部分形变量。\n\n[0026]当然，在一些实施例中，上背板21中的多条相互平行设置的第一加强筋231之间也可以采用等距设置，即任意相邻两条第一加强筋231之间的距离相等，只要满足相邻两条加强筋之间的距离大于或等于加强筋壁厚的两倍即可。在另一些实施例中，上背板21中的多条第一加强筋21相互之间也可以采用不平行设置，由上背板21的形变集中处向上背板21的各个侧边延伸并与侧边相交，具体第一加强筋231的设置方式可以根据实际需求进行设定，此处不做限制。\n\n[0027]在本申请实施例中，下背板22上同样设有加强筋，下背板22上加强筋的设置方式与上背板21的加强筋23的设置方式相同，此处不再赘述。当然，在一些实施例中，下背板22上同样可以采用现有技术中其他加强筋的设置方式或者补强结构，均可以实现对于下背板22刚性和强度的保证，此处不做限制。\n\n[0028]在本申请实施例中，上背板21靠近下背板22的一侧设有间隔排布的多个卡扣，下背板22靠近上背板21的一侧设有多个与所述卡扣对应的卡槽，上背板21与下背板22通过卡扣和卡槽的方式固定连接。当然，在一些实施例中，上背板21和下背板22还可以通过螺栓和螺帽固定连接或者通过黏胶粘接等方式固定连接，此处不做限制。\n\n[0029]在本申请实施例中，上背板21与设置于其背面的加强筋23为一体成型的结构。可选的，一体式背板2的材料可以为SECC或者SGCC等金属材料，同样也可以为ABS、PP或者PET等高分子聚合物材料，具体可以根据实际需求进行选择，此处不做限制。\n\n[0030]本申请实施例还提供一种分体式背板，如图3所示，图3为本申请实施例提供的分体式背板3的结构示意图，其结构与上述实施例所提供的分体式背板2的结构大致相同，包括相互连接的上背板31和下背板32，上背板31的背面设有加强筋33，加强筋33包括多条由上背板31远离下背板一侧边缘延伸至上背板31靠近下背板一侧边缘的第一加强筋331和两条间隔设置的第二加强筋332，第二加强筋332分别位于上背板31远离下背板的一侧边缘和上背板31靠近下背板一侧的边缘，两条所述加强筋332分别连接第一加强筋331的两端，两条第一加强筋331和多条第二加强筋332形成多个封闭的矩形结构。\n\n[0031]当从图1所示的a、b、c、d四个抬取位抬取贴附有MiniLED灯板的背板3时，多条竖直方向的第一加强筋331可以防止挤压应力由上背板31远离下背板32一侧边缘向上背板31贴附有MiniLED灯板的中间部分集中。当从图1所示的e、f、g、h四个抬取位抬取贴附有MiniLED灯板的背板3时，两条横向设置的第二加强筋332则可以防止挤压应力由上背板31左右两侧向中间部分集中，以此在分体式背板厚度不便的情况下，进一步有效提升上背板31整体的强度和刚性，减少上背板31在各个侧边的抬取位置抬取过程中或者受到外力的作用下贴附有MiniLED灯板的中间部分的形变量，从而减小MiniLED灯板之间碰撞的几率，降低MiniLED灯板发生破碎的风险。\n\n[0032]进一步的，在本申请实施例中分体式背板3的背面还设有加强铝挤34，加强铝挤34设置于所述上背板31和下背板32的连接处，并分别与上背板31和下背板32固定连接，以此增加分体式背板3整体的刚性和强度，并加固上背板31和下背板32连接的稳定性，防止上背板31和下背板32发生变形和脱落。\n\n[0033]具体地，加强铝挤34上设有间隔排布的多个通孔，上背板31和下背板32上同样设有与加强铝挤34上的通孔对应的多个通孔，加强铝挤34通过螺栓和螺帽分别与上背板31和下背板32固定连接。\n\n[0034]在本申请实施例中，下背板22上同样设有加强筋，下背板22上加强筋的设置方式与上背板21的加强筋23的设置方式相同，此处不再赘述。当然，在一些实施例中，下背板22上同样可以采用现有技术中其他加强筋的设置方式或者补强结构，均可以实现对于下背板22刚性和强度的保证，此处不做限制。\n\n[0035]本申请实施例还提供一种分体式背板4，如图4所示，图4为本申请实施例提供的分体式背板4的结构示意图。本申请实施例所提供的分体式背板4的结构与上述实施例所体用的分体式背板的结构大致相同，图4中仅展示出上背板41的部分。本申请实施例所体用的分体式背板4包括上背板41和下背板，上背板41背面设有加强筋43，加强筋43包括多条由上背板41远离下背板4一侧边缘延伸至上背板41靠近下背板一侧边缘的第一加强筋421和两条间隔设置的第二加强筋422，两条所述第二加强筋422沿垂直于第一加强筋421的方向延伸，并且与多条第一加强筋421交叉连接，以形成交叉网格状结构的加强筋。\n\n[0036]当从图1所示的a、b、c、d四个抬取位抬取贴附有MiniLED灯板的背板4时，多条竖直方向的第一加强筋421可以防止挤压应力由上背板41远离下背板一侧边缘向上背板41贴附有MiniLED灯板的中间部分集中。当从图1所示的e、f、g、h四个抬取位抬取贴附有MiniLED灯板的背板4时，两条横向设置的第二加强筋422则可以防止挤压应力由上背板41左右两侧向中间部分集中，以此在分体式背板厚度不便的情况下，进一步有效提升上背板41整体的强度和刚性，减少上背板41在各个侧边的抬取位置抬取过程中或者受到外力的作用下贴附有MiniLED灯板的中间部分的形变量，从而减小MiniLED灯板之间碰撞的几率，降低MiniLED灯板发生破碎的风险。\n\n[0037]本申请实施例的有益效果：本申请实施例通过在上背板和下背板设计加强筋，以此加强上背板和下背板的强度和刚度，减少上背板在抬取过程中的形变量，从而减小MiniLED灯板之间碰撞的几率，降低MiniLED灯板发生破碎的风险。\n\n[0038]本申请实施例还提供一种显示装置，如图5所示，图5为本申请实施例提供的显示装置的结构示意图，显示装置5包括显示面板51、MiniLED光源52以及分体式背板53。显示面板51为现有技术中的液晶显示面板，此处不再赘述。MiniLED光源52设置于分体式背板53上，MiniLED光源52包括多个MiniLED灯板521，每一所述MiniLED灯板521上设有阵列排布的多个MiniLED，多个所述MiniLED灯板521阵列排布于所述分体式背板53的承载面上。本申请实施例所通过的分体式背板53为上述实施例所提供的分体式背板，其应用于本申请实施例所提供的MiniLED显示装置中同样能够实现与上述实施例相同的技术效果，此处不再赘述。\n\n[0039]综上所述，虽然本申请以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为基准。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种分体式背板及显示装置。\n\n背景技术\n\n[0002]现有MiniLED显示装置的背板为分体式结构，如图1所示，图1为现有技术中背板的机构示意图，背板1由上背板11和下背板12组成，上背板11和下背板12的正面贴附有多块分体式的MiniLED玻璃灯板。分体式背板的下背板12背面设有补强结构，为考虑美观因素，上背板11背面为平坦表面设计。当从分体式背板两个长边的a、b、c、d四个抬取位抬取贴附有MiniLED玻璃灯板的背板1时，挤压应力由上背板11的侧边向中间部分聚集，使得上背板11贴附有MiniLED玻璃灯板的中间部分形变量最大。当从分体式背板的两个短边的e、f、g、h四个抬取为抬取背板1时，挤压应力同样会由上背板11的侧边向中间部分聚集，使得上背板11贴附有MiniLED玻璃灯板的中间部分形变量最大。MiniLED玻璃灯板属于易碎品，背板发生较大的形变时会挤压MiniLED玻璃灯板，使得各MiniLED玻璃灯板之间相互碰撞，增加MiniLED玻璃灯板破碎的风险。故，有必要提供一种分体式背板及显示装置来改善这一缺陷。\n\n发明内容\n\n[0003]本申请实施例提供一种分体式背板及显示装置，用于解决现有分体式背板由于上背板形变较大导致玻璃灯板之间相互碰撞并发生破碎的问题。\n\n[0004]本申请实施例提供一种分体式背板，包括相互连接的上背板和下背板，所述分体式背板包括用于承载MiniLED灯板的承载面和位于所述承载面相反一侧的背面，所述上背板和所述下背板的背面均设有加强筋。\n\n[0005]根据本申请一实施例，所述加强筋包括多条间隔设置于所述上背板背面的第一加强筋，所述第一加强筋由所述上背板远离所述下背板的一侧延伸至所述上背板靠近所述下背板的一侧。\n\n[0006]根据本申请一实施例，多条所述第一加强筋之间相互平行，相邻两条所述第一加强筋之间的距离相等。\n\n[0007]根据本申请一实施例，多条所述第一加强筋之间相互平行，相邻两条所述第一加强筋之间的距离沿垂直于所述第一加强筋的方向由所述上背板两侧向中间渐次递减。\n\n[0008]根据本申请一实施例，所述加强筋还包括两条间隔设置于所述上背板背面的第二加强筋，所述第二加强筋分别位于所述上背板远离所述下背板一侧边缘和所述上背板靠近所述下背板一侧边缘，两条所述第二加强筋分别连接所述第一加强筋的两端。\n\n[0009]根据本申请一实施例，所述加强筋还包括至少两条间隔设置的第二加强筋，所述第二加强筋与所述第一加强筋交叉连接。\n\n[0010]根据本申请一实施例，所述上背板靠近所述下背板的一侧设有卡扣，所述下背板靠近所述上背板的一侧设有与所述卡扣对应的卡槽。\n\n[0011]根据本申请一实施例，所述分体式背板的背面还设有加强铝挤，所述加强铝挤设置于所述上背板和所述下背板的连接处并分别与所述下背板和所述下背板固定连接。\n\n[0012]根据本申请一实施例，所述上背板和所述下背板的背面均设有通孔，所述加强铝挤通过螺栓分别与所述上背板和所述下背板固定连接。\n\n[0013]本申请实施例还提供一种显示装置，包括显示面板、MiniLED光源以及如上述的分体式背板，所述MiniLED光源包括至少一块MiniLED灯板，所述MiniLED光源设置于所述分体式背板的承载面上，所述显示面板设置于所述分体式背板上。\n\n[0014]本申请实施例的有益效果：本申请实施例通过在上背板和下背板设计加强筋，以此加强上背板和下背板的强度和刚度，减少上背板在抬取过程中的形变量，从而减小MiniLED灯板之间碰撞的几率，降低MiniLED灯板发生破碎的风险。\n\n附图说明\n\n[0015]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0016]图1为现有技术的分体式背板的结构示意图；\n\n[0017]图2为本申请实施例提供的第一种分体式背板的结构示意图；\n\n[0018]图3为本申请实施例提供的第二种分体式背板的结构示意图；\n\n[0019]图4为本申请实施例提供的第三种分体式背板的结构示意图；\n\n[0020]图5为本申请实施例提供的显示装置的结构示意图。\n\n具体实施方式\n\n[0021]以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。\n\n[0022]下面结合附图和具体实施例对本申请做进一步的说明。\n\n[0023]本申请实施例提供一种分体式背板，下面结合图2进行详细说明。如图2所示，图2为本申请实施例提供的分体式背板2的背面结构示意图，所述分体式背板2包括相互连接的上背板21和下背板22，分体式背板2包括用于承载MiniLED灯板的承载面和位于承载面相反一侧的背面，上背板21的背面设有加强筋23。\n\n[0024]具体的，以上背板21为例进行说明。加强筋23包括多条间隔设置的第一加强筋231，第一加强筋231由上背板21远离下背板22的一侧边缘延伸至上背板21靠近下背板22的一侧边缘，并分别与上背板21的上下两侧边缘相交。当从图1所示的a、b、c、d四个抬取位抬取贴附有MiniLED灯板的背板2时，多条沿竖直方向延伸的第一加强筋231可以防止挤压应力由上背板21远离下背板22一侧的边缘向上背板21贴附有MiniLED灯板的中间部分集中，以此在分体式背板厚度不便的情况下，有效提升上背板21整体的强度和刚性，减少上背板21在抬取过程中或者受到外力的作用下贴附有MiniLED灯板的中间部分的形变量，从而减小MiniLED灯板之间碰撞的几率，降低MiniLED灯板发生破碎的风险。\n\n[0025]进一步的，上背板21中多条所述第一加强筋231之间相互平行设置，并且相邻两条第一加强筋231之间的距离沿垂直于第一加强筋231的方向由上背板21的左右两侧向中间渐次递减，从而使得上背板231位于中间部分的第一加强筋231的密度高于位于两侧第一加强筋231的密度，以提高上背板21位于中间部分的强度和刚性，减小上背板231中间部分形变量。\n\n[0026]当然，在一些实施例中，上背板21中的多条相互平行设置的第一加强筋231之间也可以采用等距设置，即任意相邻两条第一加强筋231之间的距离相等，只要满足相邻两条加强筋之间的距离大于或等于加强筋壁厚的两倍即可。在另一些实施例中，上背板21中的多条第一加强筋21相互之间也可以采用不平行设置，由上背板21的形变集中处向上背板21的各个侧边延伸并与侧边相交，具体第一加强筋231的设置方式可以根据实际需求进行设定，此处不做限制。\n\n[0027]在本申请实施例中，下背板22上同样设有加强筋，下背板22上加强筋的设置方式与上背板21的加强筋23的设置方式相同，此处不再赘述。当然，在一些实施例中，下背板22上同样可以采用现有技术中其他加强筋的设置方式或者补强结构，均可以实现对于下背板22刚性和强度的保证，此处不做限制。\n\n[0028]在本申请实施例中，上背板21靠近下背板22的一侧设有间隔排布的多个卡扣，下背板22靠近上背板21的一侧设有多个与所述卡扣对应的卡槽，上背板21与下背板22通过卡扣和卡槽的方式固定连接。当然，在一些实施例中，上背板21和下背板22还可以通过螺栓和螺帽固定连接或者通过黏胶粘接等方式固定连接，此处不做限制。\n\n[0029]在本申请实施例中，上背板21与设置于其背面的加强筋23为一体成型的结构。可选的，一体式背板2的材料可以为SECC或者SGCC等金属材料，同样也可以为ABS、PP或者PET等高分子聚合物材料，具体可以根据实际需求进行选择，此处不做限制。\n\n[0030]本申请实施例还提供一种分体式背板，如图3所示，图3为本申请实施例提供的分体式背板3的结构示意图，其结构与上述实施例所提供的分体式背板2的结构大致相同，包括相互连接的上背板31和下背板32，上背板31的背面设有加强筋33，加强筋33包括多条由上背板31远离下背板一侧边缘延伸至上背板31靠近下背板一侧边缘的第一加强筋331和两条间隔设置的第二加强筋332，第二加强筋332分别位于上背板31远离下背板的一侧边缘和上背板31靠近下背板一侧的边缘，两条所述加强筋332分别连接第一加强筋331的两端，两条第一加强筋331和多条第二加强筋332形成多个封闭的矩形结构。\n\n[0031]当从图1所示的a、b、c、d四个抬取位抬取贴附有MiniLED灯板的背板3时，多条竖直方向的第一加强筋331可以防止挤压应力由上背板31远离下背板32一侧边缘向上背板31贴附有MiniLED灯板的中间部分集中。当从图1所示的e、f、g、h四个抬取位抬取贴附有MiniLED灯板的背板3时，两条横向设置的第二加强筋332则可以防止挤压应力由上背板31左右两侧向中间部分集中，以此在分体式背板厚度不便的情况下，进一步有效提升上背板31整体的强度和刚性，减少上背板31在各个侧边的抬取位置抬取过程中或者受到外力的作用下贴附有MiniLED灯板的中间部分的形变量，从而减小MiniLED灯板之间碰撞的几率，降低MiniLED灯板发生破碎的风险。\n\n[0032]进一步的，在本申请实施例中分体式背板3的背面还设有加强铝挤34，加强铝挤34设置于所述上背板31和下背板32的连接处，并分别与上背板31和下背板32固定连接，以此增加分体式背板3整体的刚性和强度，并加固上背板31和下背板32连接的稳定性，防止上背板31和下背板32发生变形和脱落。\n\n[0033]具体地，加强铝挤34上设有间隔排布的多个通孔，上背板31和下背板32上同样设有与加强铝挤34上的通孔对应的多个通孔，加强铝挤34通过螺栓和螺帽分别与上背板31和下背板32固定连接。\n\n[0034]在本申请实施例中，下背板22上同样设有加强筋，下背板22上加强筋的设置方式与上背板21的加强筋23的设置方式相同，此处不再赘述。当然，在一些实施例中，下背板22上同样可以采用现有技术中其他加强筋的设置方式或者补强结构，均可以实现对于下背板22刚性和强度的保证，此处不做限制。\n\n[0035]本申请实施例还提供一种分体式背板4，如图4所示，图4为本申请实施例提供的分体式背板4的结构示意图。本申请实施例所提供的分体式背板4的结构与上述实施例所体用的分体式背板的结构大致相同，图4中仅展示出上背板41的部分。本申请实施例所体用的分体式背板4包括上背板41和下背板，上背板41背面设有加强筋43，加强筋43包括多条由上背板41远离下背板4一侧边缘延伸至上背板41靠近下背板一侧边缘的第一加强筋421和两条间隔设置的第二加强筋422，两条所述第二加强筋422沿垂直于第一加强筋421的方向延伸，并且与多条第一加强筋421交叉连接，以形成交叉网格状结构的加强筋。\n\n[0036]当从图1所示的a、b、c、d四个抬取位抬取贴附有MiniLED灯板的背板4时，多条竖直方向的第一加强筋421可以防止挤压应力由上背板41远离下背板一侧边缘向上背板41贴附有MiniLED灯板的中间部分集中。当从图1所示的e、f、g、h四个抬取位抬取贴附有MiniLED灯板的背板4时，两条横向设置的第二加强筋422则可以防止挤压应力由上背板41左右两侧向中间部分集中，以此在分体式背板厚度不便的情况下，进一步有效提升上背板41整体的强度和刚性，减少上背板41在各个侧边的抬取位置抬取过程中或者受到外力的作用下贴附有MiniLED灯板的中间部分的形变量，从而减小MiniLED灯板之间碰撞的几率，降低MiniLED灯板发生破碎的风险。\n\n[0037]本申请实施例的有益效果：本申请实施例通过在上背板和下背板设计加强筋，以此加强上背板和下背板的强度和刚度，减少上背板在抬取过程中的形变量，从而减小MiniLED灯板之间碰撞的几率，降低MiniLED灯板发生破碎的风险。\n\n[0038]本申请实施例还提供一种显示装置，如图5所示，图5为本申请实施例提供的显示装置的结构示意图，显示装置5包括显示面板51、MiniLED光源52以及分体式背板53。显示面板51为现有技术中的液晶显示面板，此处不再赘述。MiniLED光源52设置于分体式背板53上，MiniLED光源52包括多个MiniLED灯板521，每一所述MiniLED灯板521上设有阵列排布的多个MiniLED，多个所述MiniLED灯板521阵列排布于所述分体式背板53的承载面上。本申请实施例所通过的分体式背板53为上述实施例所提供的分体式背板，其应用于本申请实施例所提供的MiniLED显示装置中同样能够实现与上述实施例相同的技术效果，此处不再赘述。\n\n[0039]综上所述，虽然本申请以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为基准。');
INSERT INTO `os_patent_instruction_text` VALUES (10886, 23940, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种显示面板和显示面板制程方法。\n\n背景技术\n\n[0002]微型发光二极管(Micro-light emitting diodes，MicroLED)是一种新型自发光显示技术，具有亮度高，发光效率好，功耗低，寿命长且轻薄等优点的显示器件，有望成为下一代主流显示技术。与目前主流显示屏幕LCD和OLED相比，其耗电量明显降低，且亮度比OLED高几个数量级。\n\n[0003]微型发光二极管的显示装置在完成绑定工艺后，一般需要用树脂覆盖基板端子露出部及COF(Chip On Flex,or,Chip On Film,常称覆晶薄膜)引线露出部，防止由异物、水分等引起的端子间短路和端子腐蚀。而微型发光二极管显示面板在实际涂布时，因为树脂存在流动性，造成宽度不均，存在溢出至面内微型发光二极管，影响产品光学显示的风险。\n\n发明内容\n\n[0004]本申请实施例提供一种显示面板和显示面板制程方法，能够避免树脂溢出至微型发光二极管设置的区域，影响产品光学显示，从而提高显示面板的品质。\n\n[0005]本申请提供一种显示面板，包括：\n\n[0006]阵列基板，所述阵列基板具有相对设置的第一面和第二面以及第一端和第二端；\n\n[0007]覆晶薄膜，所述覆晶薄膜设置在所述第一面，且位于所述第一端；\n\n[0008]微型发光二极管，所述微型发光二极管阵列设置在所述第一面；\n\n[0009]隔离带，所述隔离带可拆卸地安装在所述第一面，且位于所述覆晶薄膜与所述微型发光二极管之间；\n\n[0010]树脂封装层，所述树脂封装层覆盖所述覆晶薄膜靠近所述隔离带的端部，且延伸至所述隔离带；\n\n[0011]其中，当树脂固化形成所述树脂封装层后，所述隔离带从所述第一面拆卸。\n\n[0012]在一些实施例中，所述隔离带从所述第一面朝向远离所述第一面延伸的高度大于所述树脂封装层从所述第一面朝向远离所述第一面延伸的高度。\n\n[0013]在一些实施例中，所述隔离带从所述第一面朝向远离所述第一面延伸的高度大于100um。\n\n[0014]在一些实施例中，所述隔离带与靠近所述隔离带的微型发光二极管之间具有间隙。\n\n[0015]在一些实施例中，所述覆晶薄膜通过胶水安装在所述第一面。\n\n[0016]在一些实施例中，所述阵列基板还具有相对设置的第三端和第四端，所述第一端和第二端通过所述第三端和第四端相连，所述隔离带从所述第三端朝向所述第四端延伸的长度大于所述树脂封装层从所述第三端朝向所述第四端延伸的长度。\n\n[0017]在一些实施例中，所述隔离带朝向所述第三端或者所述第四端的一端设有开口，所述开口位于靠近所述第一面的一侧。\n\n[0018]在一些实施例中，所述开口从所述隔离带端部朝向远离所述隔离带端部一侧延伸的位置不超过所述覆晶薄膜的端部。\n\n[0019]在一些实施例中，所述树脂封装层远离所述阵列基板的一面为平整面。\n\n[0020]本申请实施例提供一种显示面板制程方法，包括：\n\n[0021]提供一阵列基板，所述阵列基板具有相对设置的第一面和第二面以及第一端和第二端，所述第一面设有微型发光二极管；\n\n[0022]在所述第一面设置覆晶薄膜，所述覆晶薄膜位于所述第一端；\n\n[0023]在所述第一面设置隔离带，所述隔离带位于所述覆晶薄膜与所述微型发光二极管之间；\n\n[0024]在所述覆晶薄膜靠近所述隔离带的端部涂布有树脂，所述树脂从所述覆晶薄膜靠近所述隔离带的端部延伸至所述隔离带；\n\n[0025]当所述树脂固化形成树脂封装层后，将所述隔离带从所述第一面拆卸。\n\n[0026]本申请实施例所提供的显示面板和显示面板制程方法，显示面板包括阵列基板、覆晶薄膜、微型发光二极管、隔离带以及树脂封装层，所述阵列基板具有相对设置的第一面和第二面以及第一端和第二端，所述覆晶薄膜设置在所述第一面，且位于所述第一端，所述微型发光二极管阵列设置在所述第一面，所述隔离带可拆卸地安装在所述第一面，且位于所述覆晶薄膜与所述微型发光二极管之间，所述树脂封装层覆盖所述覆晶薄膜靠近所述隔离带的端部，且延伸至所述隔离带；其中，当树脂固化形成所述树脂封装层后，所述隔离带从所述第一面拆卸。由于在微型发光二极管和覆晶薄膜之间设有隔离带，因此，隔离带可以阻挡树脂溢出到微型发光二极管，同时，树脂固化后，将隔离带拆除，避免隔离带占用显示面板的设计空间。通过本申请的设计可以提高显示面板品质。\n\n附图说明\n\n[0027]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0028]图1为本申请实施例提供的显示面板的结构示意图。\n\n[0029]图2为本申请实施例提供的显示面板的平面示意图。\n\n[0030]图3为本申请实施例提供的显示面板的另一种结构示意图。\n\n[0031]图4为本申请实施例提供的显示面板的流程示意图。\n\n[0032]图5为本申请实施例提供的显示面板制程方法工艺流程示意图。\n\n具体实施方式\n\n[0033]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0034]需要说明的是，在本申请的描述中，需要理解的是，术语“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。\n\n[0035]本申请提供了一种显示面板和显示面板制程方法，以下对显示面板进行详细介绍。\n\n[0036]请参阅图1和图2，图1为本申请实施例提供的显示面板结构示意图。图2为本申请实施例提供的显示面板的平面示意图。其中，本申请实施例提供的显示面板100包括阵列基板10、覆晶薄膜20、微型发光二极管30、隔离带40以及树脂封装层50。所述阵列基板10具有相对设置的第一面10a和第二面10b以及第一端10c和第二端10d。所述覆晶薄膜20设置在所述第一面10a，且位于所述第一端10c。所述微型发光二极管30阵列设置在所述第一面10a。所述隔离带40可拆卸地安装在所述第一面10a，且位于所述覆晶薄膜20与所述微型发光二极管30之间。所述树脂封装层50覆盖所述覆晶薄膜20靠近所述隔离带40的端部，且延伸至所述隔离带40。其中，当树脂固化形成所述树脂封装层50后，所述隔离带40从所述第一面10a拆卸。\n\n[0037]需要说明的是，第一面10a为阵列基板10的上表面，第二面10b为阵列基板10的下表面。当然，第一面10a与第二面10b的位置可以交换。第一端10c为阵列基板10的左端，第二端10d为阵列基板10的右端。当然，第一端10c与第二端10d的位置可以交换。\n\n[0038]另外，COF(Chip On Flex,or,Chip On Film,常称覆晶薄膜20)为驱动IC固定于柔性线路板上晶粒软膜，也就是运用软质附加电路板作封装芯片载体将芯片与软性基板电路接合。具体的，覆晶薄膜20可以通过胶水固定在第一面10a，覆晶薄膜20一部分固定在第一面10a，另一部分从第一端10c延伸至阵列基板10外侧。\n\n[0039]另外，微型发光二极管30呈阵列式排布在第一面10a，微型发光二极管30可以发光。\n\n[0040]另外的，隔离带40为一个条状结构，隔离带40设置在第一面10a，且位于覆晶薄膜20与微型发光二极管30之间。隔离带40与第一面10a可通过胶水固定。当隔离带40需要拆卸时，可采用物理剥离的方式将隔离带40拆卸。当然，隔离带40还可以采用其他形状。比如，隔离带40的形状为波浪状。在一些实施例中，隔离带40还可以采用其他可拆卸地安装方式。本申请实施例中不多过多赘述。\n\n[0041]另外，树脂封装层50是通过树脂加热固化后形成。树脂封装层50首先通过涂布的方式覆盖覆晶薄膜20靠近所述隔离带40的端部，且延伸至隔离带40。隔离带40能够阻挡树脂溢出到微型发光二极管30设置的区域。当树脂封装层50形成后，将隔离带40从第一面10a拆卸下来。避免隔离带40占用显示面板100的空间。\n\n[0042]其中，所述隔离带40从所述第一面10a朝向远离所述第一面10a延伸的高度大于所述树脂封装层50从所述第一面10a朝向远离所述第一面10a延伸的高度。\n\n[0043]需要说明的是，限定隔离带40的高度主要是为了防止树脂在涂布过程中溢出隔离带40。如果隔离带40的高度太低，在涂布树脂的过程中，树脂仍然有可能溢出隔离带40到达微型发光二极管30设置的区域，从而影响微型发光二极管30的发光。本申请隔离带40的高度大于树脂封装层50的高度。因此，可以有效防止树脂溢出隔离带40到达微型发光二极管30设置的区域。\n\n[0044]其中，所述隔离带40从所述第一面10a朝向远离所述第一面10a延伸的高度大于100um。\n\n[0045]需要说明的是，隔离带40从第一面10a朝向远离所述第一面10a延伸的高度可以为100um、110um、115um、120un等。确定隔离带40的最小高度为100um，这样可以有效防止树脂溢出隔离带40，避免树脂到达微型发光二极管30设置的区域。\n\n[0046]其中，所述隔离带40与靠近所述隔离带40的微型发光二极管30之间具有间隙60。\n\n[0047]需要说明的是，隔离带40与靠近隔离带40的微型发光二极管30之间具有间隙60。在安装隔离带40和拆卸隔离带40的时候，都使得隔离带40与微型发光二极管30之间具有空间，从而可以避免隔离带40刮擦微型发光二极管30，防止微型发光二极管30被损坏。\n\n[0048]其中，所述覆晶薄膜20通过胶水安装在所述第一面10a。\n\n[0049]可以理解的是，覆晶薄膜20还可以通过其他方式固定在第一面10a。比如，采用热熔的方式固定在第一面10a。本申请实施例中对覆晶薄膜20固定在第一面10a的具体方式不过多赘述。\n\n[0050]其中，所述阵列基板10还具有相对设置的第三端10e和第四端10f。所述第一端10c和第二端10d通过所述第三端10e和第四端10f相连。所述隔离带40从所述第三端10e朝向所述第四端10f延伸的长度大于所述树脂封装层50从所述第三端10e朝向所述第四端10f延伸的长度。\n\n[0051]需要说明的是，第三端10e为阵列基板10的前端，第四端10f为阵列基板10的后端。当然，第三端10e和第四端10f的位置可以交换。限定隔离带40的长度主要是为了防止树脂在涂布过程中溢出隔离带40，如果隔离带40的长度太短，在涂布树脂的过程中，树脂仍然有可能溢出隔离带40到达微型发光二极管30设置的区域，从而影响微型发光二极管30的发光。本申请隔离带40的长度大于树脂封装层50的高度。因此，可以有效防止树脂溢出隔离带40到达微型发光二极管30设置的区域。\n\n[0052]请参阅图3，图3为本申请实施例提供的显示面板另一种结构示意图。其中，所述隔离带40朝向所述第三端10e或者所述第四端10f的一端设有开口70。所述开口70位于靠近所述第一面10a的一侧。\n\n[0053]需要说明的是，在隔离带40的端部设置一个开口70。在物理剥离隔离带40的时候，可以沿开口70进行剥离，这样就可以更加容易的将隔离带40从第一面10a剥离。\n\n[0054]其中，所述开口70从所述隔离带40端部朝向远离所述隔离带40端部一侧延伸的位置不超过所述覆晶薄膜20的端部。\n\n[0055]需要说明的是，开口70从所述隔离带40端部朝向远离所述隔离带40端部一侧延伸的位置不超过所述覆晶薄膜20的端部，这样可以避免树脂从开口70处流到微型发光二极管30设置的区域。\n\n[0056]本申请实施例的显示面板100可以用于智能手机(smartphone)、平板电脑(tabletpersonal computer)、移动电话(mobile phone)、视频电话机、电子书阅读器(e-bookreader)、台式计算机(desktop PC)、手提电脑(laptop PC)、上网本(netbook computer)、工作站(workstation)、服务器、个人数字助理(personal digital assistant)、便携式媒体播放器(portable multimedia player)、MP3播放器、移动医疗机器、照相机、游戏机、数码相机、车载导航仪、电子广告牌、自动取款机或可穿戴设备(wearable device)中的至少一个。以下对显示面板100做详细介绍。\n\n[0057]本申请实施例提供的显示面板100包括阵列基板10、覆晶薄膜20、微型发光二极管30、隔离带40以及树脂封装层50。所述阵列基板10具有相对设置的第一面10a和第二面10b以及第一端10c和第二端10d。所述覆晶薄膜20设置在所述第一面10a，且位于所述第一端10c。所述微型发光二极管30阵列设置在所述第一面10a。所述隔离带40可拆卸地安装在所述第一面10a，且位于所述覆晶薄膜20与所述微型发光二极管30之间。所述树脂封装层50覆盖所述覆晶薄膜20靠近所述隔离带40的端部，且延伸至所述隔离带40。其中，当树脂固化形成所述树脂封装层50后，所述隔离带40从所述第一面10a拆卸。由于在微型发光二极管30和覆晶薄膜20之间设有隔离带40，因此，隔离带40可以阻挡树脂溢出到微型发光二极管30，同时，树脂固化后，将隔离带40拆除，避免隔离带40占用显示面板100的设计空间。通过本申请的设计可以提高显示面板100品质。\n\n[0058]请参阅图4和图5，图4为本申请实施例提供显示面板制程方法流程示意图。图5为本申请实施例提供的显示面板制程方法工艺流程示意图。其中，本申请实施例一种显示面板制程方法，包括步骤：\n\n[0059]201、提供一阵列基板，所述阵列基板具有相对设置的第一面和第二面以及第一端和第二端，所述第一面设有微型发光二极管。\n\n[0060]需要说明的是，第一面10a为阵列基板10的上表面，第二面10b为阵列基板10的下表面。当然，第一面10a与第二面10b的位置可以交换。第一端10c为阵列基板10的左端，第二端10d为阵列基板10的右端。当然，第一端10c与第二端10d的位置可以交换。第三端10e为阵列基板10的前端，第四端10f为阵列基板10的后端。当然，第三端10e和第四端10f的位置可以交换。\n\n[0061]202、在所述第一面设置覆晶薄膜，所述覆晶薄膜位于所述第一端。\n\n[0062]需要说明的是COF(Chip On Flex,or,Chip On Film,常称覆晶薄膜20)为驱动IC固定于柔性线路板上晶粒软膜，也就是运用软质附加电路板作封装芯片载体将芯片与软性基板电路接合。具体的，覆晶薄膜20可以通过胶水固定在第一面10a，覆晶薄膜20一部分固定在第一面10a，另一部分从第一端10c延伸至阵列基板10外侧。\n\n[0063]203、在所述第一面设置隔离带，所述隔离带位于所述覆晶薄膜与所述微型发光二极管之间。\n\n[0064]需要说明的是，隔离带40为一个条状结构，隔离带40设置在第一面10a，且位于覆晶薄膜20与微型发光二极管30之间。隔离带40与第一面10a可通过胶水固定。当隔离带40需要拆卸时，可采用物理剥离的方式将隔离带40拆卸。当然，隔离带40还可以采用其他形状。比如，隔离带40的形状为波浪状。在一些实施例中，隔离带40还可以采用其他可拆卸地安装方式。本申请实施例中不多过多赘述。\n\n[0065]204、在所述覆晶薄膜靠近所述隔离带的端部涂布有树脂，所述树脂从所述覆晶薄膜靠近所述隔离带的端部延伸至所述隔离带。\n\n[0066]需要说明的是，可以采用机器涂布树脂，也可以通过人工涂布树脂。\n\n[0067]205、当所述树脂固化形成树脂封装层后，将所述隔离带从所述第一面拆卸。\n\n[0068]需要说明的是，树脂封装层50是通过树脂加热固化后形成。树脂封装层50首先通过涂布的方式覆盖覆晶薄膜20靠近所述隔离带40的端部，且延伸至隔离带40，隔离带40能够阻挡树脂溢出到微型发光二极管30设置的区域。当树脂封装层50形成后，将隔离带40从第一面10a拆卸下来。避免隔离带40占用显示面板100的空间。\n\n[0069]采用本申请显示面板制程方法，由于在微型发光二极管30和覆晶薄膜20之间设有隔离带40，因此，隔离带40可以阻挡树脂溢出到微型发光二极管30，同时，树脂固化后，将隔离带40拆除，避免隔离带40占用显示面板100的设计空间。通过本申请的设计可以提高显示面板100品质。\n\n[0070]以上对本申请实施例提供的显示面板和显示面板制程方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种显示面板和显示面板制程方法。\n\n背景技术\n\n[0002]微型发光二极管(Micro-light emitting diodes，MicroLED)是一种新型自发光显示技术，具有亮度高，发光效率好，功耗低，寿命长且轻薄等优点的显示器件，有望成为下一代主流显示技术。与目前主流显示屏幕LCD和OLED相比，其耗电量明显降低，且亮度比OLED高几个数量级。\n\n[0003]微型发光二极管的显示装置在完成绑定工艺后，一般需要用树脂覆盖基板端子露出部及COF(Chip On Flex,or,Chip On Film,常称覆晶薄膜)引线露出部，防止由异物、水分等引起的端子间短路和端子腐蚀。而微型发光二极管显示面板在实际涂布时，因为树脂存在流动性，造成宽度不均，存在溢出至面内微型发光二极管，影响产品光学显示的风险。\n\n发明内容\n\n[0004]本申请实施例提供一种显示面板和显示面板制程方法，能够避免树脂溢出至微型发光二极管设置的区域，影响产品光学显示，从而提高显示面板的品质。\n\n[0005]本申请提供一种显示面板，包括：\n\n[0006]阵列基板，所述阵列基板具有相对设置的第一面和第二面以及第一端和第二端；\n\n[0007]覆晶薄膜，所述覆晶薄膜设置在所述第一面，且位于所述第一端；\n\n[0008]微型发光二极管，所述微型发光二极管阵列设置在所述第一面；\n\n[0009]隔离带，所述隔离带可拆卸地安装在所述第一面，且位于所述覆晶薄膜与所述微型发光二极管之间；\n\n[0010]树脂封装层，所述树脂封装层覆盖所述覆晶薄膜靠近所述隔离带的端部，且延伸至所述隔离带；\n\n[0011]其中，当树脂固化形成所述树脂封装层后，所述隔离带从所述第一面拆卸。\n\n[0012]在一些实施例中，所述隔离带从所述第一面朝向远离所述第一面延伸的高度大于所述树脂封装层从所述第一面朝向远离所述第一面延伸的高度。\n\n[0013]在一些实施例中，所述隔离带从所述第一面朝向远离所述第一面延伸的高度大于100um。\n\n[0014]在一些实施例中，所述隔离带与靠近所述隔离带的微型发光二极管之间具有间隙。\n\n[0015]在一些实施例中，所述覆晶薄膜通过胶水安装在所述第一面。\n\n[0016]在一些实施例中，所述阵列基板还具有相对设置的第三端和第四端，所述第一端和第二端通过所述第三端和第四端相连，所述隔离带从所述第三端朝向所述第四端延伸的长度大于所述树脂封装层从所述第三端朝向所述第四端延伸的长度。\n\n[0017]在一些实施例中，所述隔离带朝向所述第三端或者所述第四端的一端设有开口，所述开口位于靠近所述第一面的一侧。\n\n[0018]在一些实施例中，所述开口从所述隔离带端部朝向远离所述隔离带端部一侧延伸的位置不超过所述覆晶薄膜的端部。\n\n[0019]在一些实施例中，所述树脂封装层远离所述阵列基板的一面为平整面。\n\n[0020]本申请实施例提供一种显示面板制程方法，包括：\n\n[0021]提供一阵列基板，所述阵列基板具有相对设置的第一面和第二面以及第一端和第二端，所述第一面设有微型发光二极管；\n\n[0022]在所述第一面设置覆晶薄膜，所述覆晶薄膜位于所述第一端；\n\n[0023]在所述第一面设置隔离带，所述隔离带位于所述覆晶薄膜与所述微型发光二极管之间；\n\n[0024]在所述覆晶薄膜靠近所述隔离带的端部涂布有树脂，所述树脂从所述覆晶薄膜靠近所述隔离带的端部延伸至所述隔离带；\n\n[0025]当所述树脂固化形成树脂封装层后，将所述隔离带从所述第一面拆卸。\n\n[0026]本申请实施例所提供的显示面板和显示面板制程方法，显示面板包括阵列基板、覆晶薄膜、微型发光二极管、隔离带以及树脂封装层，所述阵列基板具有相对设置的第一面和第二面以及第一端和第二端，所述覆晶薄膜设置在所述第一面，且位于所述第一端，所述微型发光二极管阵列设置在所述第一面，所述隔离带可拆卸地安装在所述第一面，且位于所述覆晶薄膜与所述微型发光二极管之间，所述树脂封装层覆盖所述覆晶薄膜靠近所述隔离带的端部，且延伸至所述隔离带；其中，当树脂固化形成所述树脂封装层后，所述隔离带从所述第一面拆卸。由于在微型发光二极管和覆晶薄膜之间设有隔离带，因此，隔离带可以阻挡树脂溢出到微型发光二极管，同时，树脂固化后，将隔离带拆除，避免隔离带占用显示面板的设计空间。通过本申请的设计可以提高显示面板品质。\n\n附图说明\n\n[0027]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0028]图1为本申请实施例提供的显示面板的结构示意图。\n\n[0029]图2为本申请实施例提供的显示面板的平面示意图。\n\n[0030]图3为本申请实施例提供的显示面板的另一种结构示意图。\n\n[0031]图4为本申请实施例提供的显示面板的流程示意图。\n\n[0032]图5为本申请实施例提供的显示面板制程方法工艺流程示意图。\n\n具体实施方式\n\n[0033]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0034]需要说明的是，在本申请的描述中，需要理解的是，术语“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。\n\n[0035]本申请提供了一种显示面板和显示面板制程方法，以下对显示面板进行详细介绍。\n\n[0036]请参阅图1和图2，图1为本申请实施例提供的显示面板结构示意图。图2为本申请实施例提供的显示面板的平面示意图。其中，本申请实施例提供的显示面板100包括阵列基板10、覆晶薄膜20、微型发光二极管30、隔离带40以及树脂封装层50。所述阵列基板10具有相对设置的第一面10a和第二面10b以及第一端10c和第二端10d。所述覆晶薄膜20设置在所述第一面10a，且位于所述第一端10c。所述微型发光二极管30阵列设置在所述第一面10a。所述隔离带40可拆卸地安装在所述第一面10a，且位于所述覆晶薄膜20与所述微型发光二极管30之间。所述树脂封装层50覆盖所述覆晶薄膜20靠近所述隔离带40的端部，且延伸至所述隔离带40。其中，当树脂固化形成所述树脂封装层50后，所述隔离带40从所述第一面10a拆卸。\n\n[0037]需要说明的是，第一面10a为阵列基板10的上表面，第二面10b为阵列基板10的下表面。当然，第一面10a与第二面10b的位置可以交换。第一端10c为阵列基板10的左端，第二端10d为阵列基板10的右端。当然，第一端10c与第二端10d的位置可以交换。\n\n[0038]另外，COF(Chip On Flex,or,Chip On Film,常称覆晶薄膜20)为驱动IC固定于柔性线路板上晶粒软膜，也就是运用软质附加电路板作封装芯片载体将芯片与软性基板电路接合。具体的，覆晶薄膜20可以通过胶水固定在第一面10a，覆晶薄膜20一部分固定在第一面10a，另一部分从第一端10c延伸至阵列基板10外侧。\n\n[0039]另外，微型发光二极管30呈阵列式排布在第一面10a，微型发光二极管30可以发光。\n\n[0040]另外的，隔离带40为一个条状结构，隔离带40设置在第一面10a，且位于覆晶薄膜20与微型发光二极管30之间。隔离带40与第一面10a可通过胶水固定。当隔离带40需要拆卸时，可采用物理剥离的方式将隔离带40拆卸。当然，隔离带40还可以采用其他形状。比如，隔离带40的形状为波浪状。在一些实施例中，隔离带40还可以采用其他可拆卸地安装方式。本申请实施例中不多过多赘述。\n\n[0041]另外，树脂封装层50是通过树脂加热固化后形成。树脂封装层50首先通过涂布的方式覆盖覆晶薄膜20靠近所述隔离带40的端部，且延伸至隔离带40。隔离带40能够阻挡树脂溢出到微型发光二极管30设置的区域。当树脂封装层50形成后，将隔离带40从第一面10a拆卸下来。避免隔离带40占用显示面板100的空间。\n\n[0042]其中，所述隔离带40从所述第一面10a朝向远离所述第一面10a延伸的高度大于所述树脂封装层50从所述第一面10a朝向远离所述第一面10a延伸的高度。\n\n[0043]需要说明的是，限定隔离带40的高度主要是为了防止树脂在涂布过程中溢出隔离带40。如果隔离带40的高度太低，在涂布树脂的过程中，树脂仍然有可能溢出隔离带40到达微型发光二极管30设置的区域，从而影响微型发光二极管30的发光。本申请隔离带40的高度大于树脂封装层50的高度。因此，可以有效防止树脂溢出隔离带40到达微型发光二极管30设置的区域。\n\n[0044]其中，所述隔离带40从所述第一面10a朝向远离所述第一面10a延伸的高度大于100um。\n\n[0045]需要说明的是，隔离带40从第一面10a朝向远离所述第一面10a延伸的高度可以为100um、110um、115um、120un等。确定隔离带40的最小高度为100um，这样可以有效防止树脂溢出隔离带40，避免树脂到达微型发光二极管30设置的区域。\n\n[0046]其中，所述隔离带40与靠近所述隔离带40的微型发光二极管30之间具有间隙60。\n\n[0047]需要说明的是，隔离带40与靠近隔离带40的微型发光二极管30之间具有间隙60。在安装隔离带40和拆卸隔离带40的时候，都使得隔离带40与微型发光二极管30之间具有空间，从而可以避免隔离带40刮擦微型发光二极管30，防止微型发光二极管30被损坏。\n\n[0048]其中，所述覆晶薄膜20通过胶水安装在所述第一面10a。\n\n[0049]可以理解的是，覆晶薄膜20还可以通过其他方式固定在第一面10a。比如，采用热熔的方式固定在第一面10a。本申请实施例中对覆晶薄膜20固定在第一面10a的具体方式不过多赘述。\n\n[0050]其中，所述阵列基板10还具有相对设置的第三端10e和第四端10f。所述第一端10c和第二端10d通过所述第三端10e和第四端10f相连。所述隔离带40从所述第三端10e朝向所述第四端10f延伸的长度大于所述树脂封装层50从所述第三端10e朝向所述第四端10f延伸的长度。\n\n[0051]需要说明的是，第三端10e为阵列基板10的前端，第四端10f为阵列基板10的后端。当然，第三端10e和第四端10f的位置可以交换。限定隔离带40的长度主要是为了防止树脂在涂布过程中溢出隔离带40，如果隔离带40的长度太短，在涂布树脂的过程中，树脂仍然有可能溢出隔离带40到达微型发光二极管30设置的区域，从而影响微型发光二极管30的发光。本申请隔离带40的长度大于树脂封装层50的高度。因此，可以有效防止树脂溢出隔离带40到达微型发光二极管30设置的区域。\n\n[0052]请参阅图3，图3为本申请实施例提供的显示面板另一种结构示意图。其中，所述隔离带40朝向所述第三端10e或者所述第四端10f的一端设有开口70。所述开口70位于靠近所述第一面10a的一侧。\n\n[0053]需要说明的是，在隔离带40的端部设置一个开口70。在物理剥离隔离带40的时候，可以沿开口70进行剥离，这样就可以更加容易的将隔离带40从第一面10a剥离。\n\n[0054]其中，所述开口70从所述隔离带40端部朝向远离所述隔离带40端部一侧延伸的位置不超过所述覆晶薄膜20的端部。\n\n[0055]需要说明的是，开口70从所述隔离带40端部朝向远离所述隔离带40端部一侧延伸的位置不超过所述覆晶薄膜20的端部，这样可以避免树脂从开口70处流到微型发光二极管30设置的区域。\n\n[0056]本申请实施例的显示面板100可以用于智能手机(smartphone)、平板电脑(tabletpersonal computer)、移动电话(mobile phone)、视频电话机、电子书阅读器(e-bookreader)、台式计算机(desktop PC)、手提电脑(laptop PC)、上网本(netbook computer)、工作站(workstation)、服务器、个人数字助理(personal digital assistant)、便携式媒体播放器(portable multimedia player)、MP3播放器、移动医疗机器、照相机、游戏机、数码相机、车载导航仪、电子广告牌、自动取款机或可穿戴设备(wearable device)中的至少一个。以下对显示面板100做详细介绍。\n\n[0057]本申请实施例提供的显示面板100包括阵列基板10、覆晶薄膜20、微型发光二极管30、隔离带40以及树脂封装层50。所述阵列基板10具有相对设置的第一面10a和第二面10b以及第一端10c和第二端10d。所述覆晶薄膜20设置在所述第一面10a，且位于所述第一端10c。所述微型发光二极管30阵列设置在所述第一面10a。所述隔离带40可拆卸地安装在所述第一面10a，且位于所述覆晶薄膜20与所述微型发光二极管30之间。所述树脂封装层50覆盖所述覆晶薄膜20靠近所述隔离带40的端部，且延伸至所述隔离带40。其中，当树脂固化形成所述树脂封装层50后，所述隔离带40从所述第一面10a拆卸。由于在微型发光二极管30和覆晶薄膜20之间设有隔离带40，因此，隔离带40可以阻挡树脂溢出到微型发光二极管30，同时，树脂固化后，将隔离带40拆除，避免隔离带40占用显示面板100的设计空间。通过本申请的设计可以提高显示面板100品质。\n\n[0058]请参阅图4和图5，图4为本申请实施例提供显示面板制程方法流程示意图。图5为本申请实施例提供的显示面板制程方法工艺流程示意图。其中，本申请实施例一种显示面板制程方法，包括步骤：\n\n[0059]201、提供一阵列基板，所述阵列基板具有相对设置的第一面和第二面以及第一端和第二端，所述第一面设有微型发光二极管。\n\n[0060]需要说明的是，第一面10a为阵列基板10的上表面，第二面10b为阵列基板10的下表面。当然，第一面10a与第二面10b的位置可以交换。第一端10c为阵列基板10的左端，第二端10d为阵列基板10的右端。当然，第一端10c与第二端10d的位置可以交换。第三端10e为阵列基板10的前端，第四端10f为阵列基板10的后端。当然，第三端10e和第四端10f的位置可以交换。\n\n[0061]202、在所述第一面设置覆晶薄膜，所述覆晶薄膜位于所述第一端。\n\n[0062]需要说明的是COF(Chip On Flex,or,Chip On Film,常称覆晶薄膜20)为驱动IC固定于柔性线路板上晶粒软膜，也就是运用软质附加电路板作封装芯片载体将芯片与软性基板电路接合。具体的，覆晶薄膜20可以通过胶水固定在第一面10a，覆晶薄膜20一部分固定在第一面10a，另一部分从第一端10c延伸至阵列基板10外侧。\n\n[0063]203、在所述第一面设置隔离带，所述隔离带位于所述覆晶薄膜与所述微型发光二极管之间。\n\n[0064]需要说明的是，隔离带40为一个条状结构，隔离带40设置在第一面10a，且位于覆晶薄膜20与微型发光二极管30之间。隔离带40与第一面10a可通过胶水固定。当隔离带40需要拆卸时，可采用物理剥离的方式将隔离带40拆卸。当然，隔离带40还可以采用其他形状。比如，隔离带40的形状为波浪状。在一些实施例中，隔离带40还可以采用其他可拆卸地安装方式。本申请实施例中不多过多赘述。\n\n[0065]204、在所述覆晶薄膜靠近所述隔离带的端部涂布有树脂，所述树脂从所述覆晶薄膜靠近所述隔离带的端部延伸至所述隔离带。\n\n[0066]需要说明的是，可以采用机器涂布树脂，也可以通过人工涂布树脂。\n\n[0067]205、当所述树脂固化形成树脂封装层后，将所述隔离带从所述第一面拆卸。\n\n[0068]需要说明的是，树脂封装层50是通过树脂加热固化后形成。树脂封装层50首先通过涂布的方式覆盖覆晶薄膜20靠近所述隔离带40的端部，且延伸至隔离带40，隔离带40能够阻挡树脂溢出到微型发光二极管30设置的区域。当树脂封装层50形成后，将隔离带40从第一面10a拆卸下来。避免隔离带40占用显示面板100的空间。\n\n[0069]采用本申请显示面板制程方法，由于在微型发光二极管30和覆晶薄膜20之间设有隔离带40，因此，隔离带40可以阻挡树脂溢出到微型发光二极管30，同时，树脂固化后，将隔离带40拆除，避免隔离带40占用显示面板100的设计空间。通过本申请的设计可以提高显示面板100品质。\n\n[0070]以上对本申请实施例提供的显示面板和显示面板制程方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10887, 23941, '技术领域\n\n[0001]本发明涉及显示技术领域，具体涉及一种显示基板及其制备方法。\n\n背景技术\n\n[0002]在显示领域里，如LCD、OLED、LED屏幕，单一体屏幕越大，制作成本越高，因此一般的超大屏幕通常采用若干块小的屏幕拼接一起形成，以降低单位面积的成本。由于一般的屏幕都会带有边框，这会导致拼接屏的显示区域带有若干条非显示暗区，降低显示品质。另外，对于移动显示设备，如手机或者手表，具有更高的屏占比也是高品质显示屏的追求目标之一。因此，降低拼接屏的拼接缝的大小，实现无边框显示，已经成为业界热门的研究对象。\n\n发明内容\n\n[0003]为解决降低拼接屏的拼接缝尺寸、实现无边框显示的问题，本发明实施例提供一种显示基板及其制备方法。\n\n[0004]第一方面，本发明实施例提供了一种显示基板，其包括：\n\n[0005]一衬底基板，具有相对的顶面与底面以及衔接所述顶面与底面的侧壁；\n\n[0006]驱动电路层，形成于所述衬底基板的底面，其包含多个电路单元，其中至少一个电路单元由低温多晶硅薄膜晶体管组成；\n\n[0007]显示阵列层，形成于所述衬底基板的顶面，包含多个阵列分布的像素单元，每一像素单元包含至少一氧化物薄膜晶体管；及\n\n[0008]侧面导线，形成于所述衬底基板的侧壁；\n\n[0009]其中所述驱动电路层的电路单元通过所述侧面导线电连接所述显示阵列层。\n\n[0010]进一步地，所述电路单元包含栅极驱动电路、解多工器电路及扇出电路，皆形成于所述衬底基板的底面。\n\n[0011]进一步地，每一所述像素单元还包括发光器件，设置于所述衬底基板的顶面、且与所述氧化物薄膜晶体管连接；以及\n\n[0012]所述显示基板还包括：\n\n[0013]驱动芯片，连接至所述驱动电路层的至少一绑定焊盘；及\n\n[0014]印刷电路板，连接至所述驱动芯片。\n\n[0015]更进一步地，所述驱动芯片通过薄膜覆晶方式设置于柔性线路板上，再通过所述柔性线路板连接至所述驱动电路层的至少一绑定焊盘；所述印刷电路板连接至所述柔性线路板；或者\n\n[0016]所述驱动芯片通过玻璃覆晶方式直接绑定至所述驱动电路层的至少一绑定焊盘，并连接至柔性线路板；所述印刷电路板连接至所述柔性线路板。\n\n[0017]进一步地，所述发光器件为微发光二极管或有机发光二极管。\n\n[0018]进一步地，所述低温多晶硅薄膜晶体管包括：\n\n[0019]遮光层，形成在所述衬底基板的底面；\n\n[0020]第一缓冲绝缘层，覆盖在所述遮光层及所述衬底基板的底面之上；\n\n[0021]第一半导体层，形成在所述第一缓冲绝缘层之上；\n\n[0022]第一栅极绝缘层，覆盖在所述第一半导体层和所述第一缓冲绝缘层之上；\n\n[0023]第一金属膜层，形成在所述第一栅极绝缘层之上，且至少形成有第一栅极；\n\n[0024]第一介电层，覆盖在所述第一金属膜层及所述第一栅极绝缘层之上；\n\n[0025]第二金属膜层，形成在所述第一介电层之上，且至少形成有第一源极、第一漏极、第一绑定焊盘和第二源极；以及\n\n[0026]第一钝化层，覆盖在所述第二金属膜层及所述第一介电层之上；\n\n[0027]其中：所述第一源极的一端与所述遮光层连接、另一端与所述第一半导体层连接；所述第一漏极与所述第一半导体层连接；所述第二源极设在所述衬底基板边缘处、且靠近所述侧面导线的一侧，并与所述侧面导线连接。\n\n[0028]进一步地，所述氧化物薄膜晶体管包括：\n\n[0029]第二缓冲绝缘层，覆盖在所述衬底基板的顶面之上；\n\n[0030]第二半导体层，形成在所述第二缓冲绝缘层之上；\n\n[0031]栅极绝缘膜层，形成在所述第二半导体层及所述第二缓冲绝缘层之上，且至少形成位于所述第二半导体层之上的第二栅极绝缘层；\n\n[0032]第三金属膜层，形成在所述栅极绝缘膜层之上，且至少形成有位于所述第二栅极绝缘层之上的第三栅极；\n\n[0033]第二介电层，覆盖在所述第二缓冲绝缘层、所述第二半导体层、所述栅极绝缘膜层及第三金属膜层之上；\n\n[0034]第四金属膜层，形成在所述第二介电层之上，且至少形成有第三源极、第二漏极、第二绑定焊盘或公共阴极、及第四源极；\n\n[0035]第二钝化层，覆盖在所述第四金属膜层及所述第二介电层之上；\n\n[0036]其中：所述漏极与所述第二半导体层连接；所述第三源极与所述第二半导体层连接；所述第四源极设置在所述衬底基板边缘处、且靠近所述侧面导线的一侧，并与所述侧面导线连接。\n\n[0037]第二方面，本发明还提供了一种显示基板的制备方法，其包括以下步骤：\n\n[0038]步骤A、提供一衬底基板，所述衬底基板具有相对的顶面与底面以及衔接所述顶面与底面的侧壁；\n\n[0039]步骤B、在所述衬底基板的底面制备驱动电路层，所述驱动电路层包含多个电路单元，其中至少一个电路单元由低温多晶硅薄膜晶体管组成；\n\n[0040]步骤C、在所述衬底基板的顶面制备显示阵列层，所述显示阵列层包含多个阵列分布的像素单元，每一像素单元包含至少一氧化物薄膜晶体管；\n\n[0041]步骤D、在所述衬底基板的侧壁制备侧面导线，使所述驱动电路层的电路单元通过所述侧面导线电连接所述显示阵列层。\n\n[0042]进一步地，在所述步骤B中，所述电路单元包含栅极驱动电路、解多工器电路及扇出电路，皆形成于所述衬底基板的底面。\n\n[0043]进一步地，在所述步骤C中，每一所述像素单元还包括发光器件，设置于所述衬底基板的顶面、且与所述氧化物薄膜晶体管连接；\n\n[0044]所述显示基板还包括以下步骤：\n\n[0045]步骤E、将驱动芯片连接至所述驱动电路层的至少一绑定焊盘；及\n\n[0046]步骤F、将印刷电路板连接至所述驱动芯片。\n\n[0047]更进一步地，在所述步骤E中，所述驱动芯片通过薄膜覆晶方式设置于柔性线路板上，再通过所述柔性线路板连接至所述驱动电路层的至少一绑定焊盘；所述印刷电路板连接至所述柔性线路板；或者\n\n[0048]所述驱动芯片通过玻璃覆晶方式直接绑定至所述驱动电路层的至少一绑定焊盘，并且所述驱动芯片连接至柔性线路板；所述印刷电路板连接至所述柔性线路板。\n\n[0049]进一步地，所述发光器件为微发光二极管或有机发光二极管。\n\n[0050]进一步地，所述低温多晶硅薄膜晶体管的制备方法包括如下步骤：\n\n[0051]a1、在所述衬底基板的底面形成遮光层；\n\n[0052]a2、形成第一缓冲绝缘层，使其覆盖所述遮光层及所述衬底基板；\n\n[0053]a3、在所述第一缓冲绝缘层上形成第一半导体层；\n\n[0054]a4、在所述第一半导体层和所述第一缓冲绝缘层之上形成第一栅极绝缘层；\n\n[0055]a5、在所述第一栅极绝缘层之上形成第一金属膜层，且使所述第一金属膜层至少形成有第一栅极；并对所述第一半导体层进行掺杂处理；\n\n[0056]a6、形成第一介电层，使其覆盖在所述第一金属膜层及所述第一栅极绝缘层之上；\n\n[0057]a7、在所述第一介电层之上形成第二金属膜层，且使所述第二金属膜层至少形成有第一源极、第一漏极、第一绑定焊盘和第二源极；其中：使所述第一源极的一端与所述遮光层连接、另一端与所述第一半导体层连接；使所述第一漏极与所述第一半导体层连接；使所述第二源极设置在所述衬底基板边缘处、且靠近所述侧面导线的一侧，并使所述第二源极与所述侧面导线连接；以及\n\n[0058]a8、形成第一钝化层，使其覆盖在所述第二金属膜层及所述第一介电层之上。\n\n[0059]进一步地，所述氧化物薄膜晶体管的制备步骤包括如下步骤：\n\n[0060]b1、形成第二缓冲绝缘层，使其覆盖在所述衬底基板的顶面之上；\n\n[0061]b2、在所述第二缓冲绝缘层之上形成第二半导体层；\n\n[0062]b3、形成栅极绝缘膜层，使其形成在所述第二半导体层及所述第二缓冲绝缘层之上，且至少形成有位于所述第二半导体层之上的第二栅极绝缘层；\n\n[0063]b4、在所述栅极绝缘膜层之上形成第三金属膜层，且至少形成有位于所述第二栅极绝缘层之上的第三栅极；\n\n[0064]b5、形成第二介电层，使其覆盖在所述第二缓冲绝缘层、所述第二半导体层、所述栅极绝缘膜层及第三金属膜层之上；\n\n[0065]b6、在所述第二介电层之上形成第四金属膜层，且使所述第四金属膜层至少形成有第三源极、第二漏极、第二绑定焊盘或公共阴极、及第四源极；其中：使所述漏极与所述第二半导体层连接；使所述第三源极与所述第二半导体层连接；使所述第四源极设置在所述衬底基板边缘处、且靠近所述侧面导线的一侧，并使所述第四源极与所述侧面导线连接；以及\n\n[0066]b7、形成第二钝化层，使其覆盖在所述第四金属膜层及所述第二介电层之上。\n\n[0067]本发明有益效果：\n\n[0068]本发明将显示阵列层形成于衬底基板的顶面，而将驱动电路层形成于衬底基板的底面，再通过侧面导线将二者连接，由于栅极驱动电路、解多工器电路及扇出电路等电路单元皆制作于衬底基板的底面的关系，显示阵列层在衬底基板的顶面上所能提供的显示区域可以最大地延伸到衬底基板的边缘，故该方案有利于制作高解析度无边框显示基板。此外，驱动电路层采用低温多晶硅薄膜晶体管，显示阵列层采用氧化物薄膜晶体管，可以利用氧化物薄膜晶体管的低漏电流及低温多晶硅薄膜晶体管的高电流通过能力，降低显示的功耗。\n\n附图说明\n\n[0069]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0070]图1为本发明实施例实行步骤B中步骤b1的示意图。\n\n[0071]图2为本发明实施例实行步骤B中步骤b2至b3的示意图。\n\n[0072]图3为本发明实施例实行步骤B中步骤b4至b5的示意图。\n\n[0073]图4为本发明实施例实行步骤B中步骤b6的示意图。\n\n[0074]图5为本发明实施例实行步骤B中步骤b7的示意图。\n\n[0075]图6为本发明实施例实行步骤B中步骤b8至b9的示意图。\n\n[0076]图7为本发明实施例实行步骤B中步骤b10的示意图。\n\n[0077]图8为本发明实施例实行翻转所述衬底基板的示意图。\n\n[0078]图9为本发明实施例实行步骤C中步骤c1至c2的示意图。\n\n[0079]图10为本发明实施例实行步骤C中步骤c3至c4的示意图。\n\n[0080]图11为本发明实施例实行步骤C中步骤c5的示意图。\n\n[0081]图12为本发明实施例实行步骤C中步骤c6至c7的示意图。\n\n[0082]图13为本发明实施例实行步骤C中步骤b8至b9的示意图。\n\n[0083]图14为本发明实施例实行步骤C中步骤c10的示意图。\n\n[0084]图15为本发明实施例实行步骤D的示意图。\n\n[0085]图16为本发明实施例实行步骤b11、及步骤E至步骤F的示意图。\n\n[0086]图17为本发明另一实施例实行步骤b11、及步骤E至步骤F的示意图。\n\n[0087]图18为本发明另一实施例实行步骤b11、及步骤E至步骤F的示意图。\n\n[0088]图19为本发明另一实施例实行步骤b11、及步骤E至步骤F的示意图。\n\n具体实施方式\n\n[0089]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。\n\n[0090]具体的，请参阅图1至图19，本发明实施例提供一种显示基板，其包括：一衬底基板100，驱动电路层，显示阵列层及侧面导线400。\n\n[0091]如图1至图19所示，所述衬底基板100具有相对的顶面与底面以及衔接所述顶面与底面的侧壁，图中A面表示衬底基板100的顶面，B面表示衬底基板100的底面。所述衬底基板100可以为玻璃基板。\n\n[0092]所述驱动电路层，形成于所述衬底基板100的底面，其包含多个电路单元，其中至少一个电路单元由低温多晶硅薄膜晶体管200组成。所述电路单元可以包含栅极驱动电路(GOA)、解多工器电路(Demux)及扇出电路(fan-out)，皆形成于所述衬底基板100的底面。在一实施例中，所述栅极驱动电路与解多工器电路等通过薄膜晶体管实现其功能的电路单元可以由低温多晶硅薄膜晶体管200组成。\n\n[0093]如图1至图6、图16至图19所示，所述低温多晶硅薄膜晶体管200形成于所述衬底基板100的底面。所述低温多晶硅薄膜晶体管200包括遮光层201，第一缓冲绝缘层202，第一半导体层203，第一栅极绝缘层204，第一金属膜层205，第一介电层206，第二金属膜层207和第一钝化层208。\n\n[0094]如图1、图16至图19所示，所述遮光层201形成在所述衬底基板100的底面。所述遮光层201的材料可以为Mo、Mo/Al/Mo叠层、Mo/Cu叠层、Mo/Cu/IZO叠层、IZO/Cu/IZO叠层、Mo/Cu/ITO叠层、Ni/Cu/Ni叠层、MoTiNi/Cu/MoTiNi叠层、NiCr/Cu/NiCr叠层或CuNb等。\n\n[0095]如图2、图16至图19所示，所述第一缓冲绝缘层202覆盖在所述遮光层201及所述衬底基板100的底面之上。所述第一缓冲绝缘层202的材料可以为SiOx、SiNx、SiNx/SiOx叠层或SiNOx等。\n\n[0096]如图2、图16至图19所示，所述第一半导体层203形成在所述第一缓冲绝缘层202之上。所述第一半导体层203的材料为多晶硅，多晶硅可以通过非晶硅激光退火晶化或其他晶化方法获得。所述第一半导体层203经过掺杂处理，在所述第一半导体层203上预先定义有与源极(如第一源极2071)连接的区域以及与漏极(如第一漏极2072)连接的区域，所述掺杂处理是对所述第一半导体层203上与源极和漏极对应连接的区域掺杂磷离子形成N型重掺，以最终形成nMOS晶体管；或者掺杂硼离子形成P型重掺以形成pMOS晶体管。\n\n[0097]如图3、图16至图19所示，所述第一栅极绝缘层204覆盖在所述第一半导体层203和所述第一缓冲绝缘层202之上。所述第一栅极绝缘层204的材料可以为SiOx、SiNx、Al2O3/SiNx/SiOx叠层或SiOx/SiNx/SiOx叠层等。\n\n[0098]如图3、图16至图19所示，所述第一金属膜层205形成在所述第一栅极绝缘层204之上，且至少形成有第一栅极2051。在一实施例中，所述第一金属膜层205只形成有第一栅极2051(参见图17和图19)。在另一实施例中，所述第一金属膜层205除形成第一栅极2051以外，还形成有第二栅极2052(参见图3、图16和图18)，所述第二栅极2052用于与所述侧面导线400连接，所述第二栅极2052形成在所述衬底基板100的边缘处(包括边缘附近)、并且设置在靠近所述侧面导线400的一侧。所述第一金属膜层205的材料可以为Mo、Mo/Al叠层、Mo/Cu叠层、Mo/Cu/IZO叠层、IZO/Cu/IZO叠层、Mo/Cu/ITO叠层、Ni/Cu/Ni叠层、MoTiNi/Cu/MoTiNi叠层、NiCr/Cu/NiCr叠层或CuNb等。\n\n[0099]如图4、图16至图19所示，所述第一介电层206覆盖在所述第一金属膜层205及所述第一栅极绝缘层204之上。具体地，当所述第一金属膜层205只形成有第一栅极2051时，所述第一介电层206覆盖在所述第一栅极2051及所述第一栅极绝缘层204之上(参见图17和图19)；当所述第一金属膜层205还形成有第二栅极2052时，则所述第一介电层206还覆盖所述第二栅极2052(参见图4、图16和图18)。所述第一介电层206的材料可以为SiOx、SiNx、SiNOx或SiOx/SiNx叠层等。所述第一介电层206还经过氢化及活化处理，本发明不对氢化及活化方法作具体限定，采用现有常规的方法即可。\n\n[0100]如图5、图16至图19所示，所述第二金属膜层207形成在所述第一介电层206之上，且至少形成有第一源极2071、第一漏极2072、第一绑定焊盘2073和第二源极2074。所述第二金属膜层207的材料可以为：Mo、Mo/Al叠层、Mo/Cu叠层、Mo/Cu/IZO叠层、IZO/Cu/IZO叠层、Mo/Cu/ITO叠层、Ni/Cu/Ni叠层、MoTiNi/Cu/MoTiNi叠层、NiCr/Cu/NiCr叠层或CuNb等。\n\n[0101]如图5、图16至图19所示，所述第一漏极2072与所述第一半导体层203连接。可以通过如下方式实现：如图4所示，开设第一通孔2061，使其贯穿所述第一介电层206和所述第一栅极绝缘层204并通向至所述第一半导体层203，所述第一漏极2072通过所述第一通孔2061与所述第一半导体层203连接。\n\n[0102]如图5、图16至图19所示，所述第一源极2071的一端与所述遮光层201连接、另一端与所述第一半导体层203连接。可以通过如下方式实现：如图4所示，开设第三通孔2063，使其贯穿所述第一介电层206、所述第一栅极绝缘层204和所述第一缓冲绝缘层202并通向至所述遮光层201；所述第一源极2071的一端通过所述第三通孔2063与所述遮光层201连接。开设第二通孔2062，使其贯穿所述第一介电层206和所述第一栅极绝缘层204、并且通向至所述第一半导体层203；所述第一源极2071的另一端通过所述第二通孔2062与所述第一半导体层203连接。\n\n[0103]如图5、图16至图19所示，所述第二源极2074设在所述衬底基板100边缘处(包括边缘附近)、且靠近所述侧面导线400的一侧，用于与所述侧面导线400连接。\n\n[0104]如图5、图16至图19所示，所述第一绑定焊盘2073用于与其它元件连接。\n\n[0105]如图6、图16至图19所示，所述第一钝化层208覆盖在所述第二金属膜层207及所述第一介电层206之上。具体地，是覆盖所述第一介电层206、第一源极2071、所述第一漏极2072、所述第一绑定焊盘2073和第二源极2074。所述第一钝化层208的材料可以为SiNx或SiOx等。\n\n[0106]如图6、图16至图19所示，所述低温多晶硅薄膜晶体管200还包括第一保护膜层209。所述第一保护膜层209形成于所述第一钝化层208之上，且至少形成有第一保护层2091和/或第二保护层2092。所述保护膜层的材料可以为氧化铟锡(ITO)，用于抗氧化。所述第一保护层2091与所述第一绑定焊盘2073连接；所述第二保护层2092与所述第二源极2074连接。可以通过在所述第一钝化层208上图案化形成孔的方式实现连接。\n\n[0107]所述显示阵列层，形成于所述衬底基板100的顶面，包含多个阵列分布的像素单元，每一像素单元包含至少一氧化物薄膜晶体管300。所述氧化物薄膜晶体管300，可以是例如铟镓锌氧化物(IGZO)薄膜晶体管。\n\n[0108]如图9至图19所示，所述氧化物薄膜晶体管300形成于所述衬底基板100的顶面。所述氧化物薄膜晶体管300包括第二缓冲绝缘层301，第二半导体层302，栅极绝缘膜层303，第三金属膜层304，第二介电层305，第四金属膜层306和第二钝化层307。\n\n[0109]如图9、图16至图19所示，所述第二缓冲绝缘层301覆盖在所述衬底基板100的顶面之上。所述第二缓冲绝缘层301的材料可以为SiOx、SiNx、SiNx/SiOx叠层或SiNOx等。\n\n[0110]如图9、图16至图19所示，所述第二半导体层302形成在所述第二缓冲绝缘层301之上。所述第二半导体层302的材料可以为氧化物半导体，如IGZO、IGTO、IGZO、IGO、IZO、AIZO或ATZO等。\n\n[0111]如图10、图16至图19所示，所述栅极绝缘膜层303形成在所述第二半导体层302及所述第二缓冲绝缘层301之上，且至少形成位于所述第二半导体层302之上的第二栅极绝缘层3031。例如：在一实施例中，所述栅极绝缘膜层303仅形成有第二栅极绝缘层3031，所述第二栅极绝缘层3031位于所述第二半导体层302之上。在另一实施例中，所述栅极绝缘膜层303除形成有所述第二栅极绝缘层3031以外，还形成有第三栅极绝缘层3032，所述第三栅极绝缘层3032位于所述第二缓冲绝缘层301上、并且设置在所述衬底基板100边缘处(包括边缘附近)、靠近所述侧面导线400的一侧。所述栅极绝缘膜层303的材料可以为SiOx、SiNx、Al2O3/SiNx/SiOx叠层或SiOx/SiNx/SiOx叠层等。\n\n[0112]如图10、图16至图19所示，所述第三金属膜层304形成在所述栅极绝缘膜层303之上，且至少形成有位于所述第二栅极绝缘层3031之上的第三栅极3041。在一实施例中，所述第三金属膜层304只形成有第三栅极3041(参见图17和图19)，所述第三栅极3041位于所述第二栅极绝缘层3031之上。在另一实施例中，所述第三金属膜层304除形成所述第三栅极3041以外，还形成有第四栅极3042(参见图10、图16和图18)，所述第四栅极3042位于所述第三栅极绝缘层3032之上。所述第三金属膜层304的材料可以为Mo、Mo/Al叠层、Mo/Cu叠层、Mo/Cu/IZO叠层、IZO/Cu/IZO叠层、Mo/Cu/ITO叠层、Ni/Cu/Ni叠层、MoTiNi/Cu/MoTiNi叠层、NiCr/Cu/NiCr叠层或CuNb等。\n\n[0113]如图11、图16至图19所示，所述第二介电层305覆盖在所述第二缓冲绝缘层301、所述第二半导体层302、所述栅极绝缘膜层303及第三金属膜层304之上。具体地，所述第二介电层305覆盖所述第二缓冲绝缘层301、所述第二半导体层302、所述第二栅极绝缘层3031及所述第三栅极3041(参见图17和图19)；或者所述第二介电层305覆盖所述第二缓冲绝缘层301、所述第二半导体层302、所述第二栅极绝缘层3031、所述第三栅极绝缘层3032、所述第三栅极3041和所述第四栅极3042(参见图4、图16和图18)。所述第二介电层305的材料可以为SiOx、SiNx或SiNOx等。\n\n[0114]如图12、图16至图19所示，所述第四金属膜层306形成在所述第二介电层305之上，且至少形成有第二漏极3061、第三源极3062、第二绑定焊盘3063或公共阴极3065、及第四源极3064。所述第四金属膜层306的材料可以为Mo、Mo/Al叠层、Mo/Cu叠层、Mo/Cu/IZO叠层、IZO/Cu/IZO叠层、Mo/Cu/ITO叠层、Ni/Cu/Ni叠层、MoTiNi/Cu/MoTiNi叠层、NiCr/Cu/NiCr叠层、CuNb等。\n\n[0115]如图12、图16至图19所示，所述漏极与所述第二半导体层302连接；所述第三源极3062与所述第二半导体层302连接。可以通过如下方式实现：如图11所示，在所述第二介电层305上开设第四通孔3051和第五通孔3052；使所述第四通孔3051和第五通孔3052皆通向所述第二半导体层302，使所述漏极通过所述第四通孔3051与所述第二半导体层302连接，使所述第三源极3062通过所述第五通孔3052与所述第二半导体层302连接。\n\n[0116]如图12、图16至图19所示，所述第四源极3064设置在所述衬底基板100边缘处(包括边缘附近)、且靠近所述侧面导线400的一侧，用于与所述侧面导线400连接。所述第二绑定焊盘3063或所述公共阴极3065用于与其它元件连接。\n\n[0117]如图12、图16至图19所示，所述第二钝化层307覆盖在所述第四金属膜层306及所述第二介电层305之上。具体地，是覆盖所述第二介电层305、第三源极3062、第二漏极3061、第二绑定焊盘3063或公共阴极3065、及第四源极3064。所述第二钝化层307的材料可以为SiOx、SiOx/SiNx叠层或Al2O3/SiOx叠层等。\n\n[0118]如图13、图16至图19所示，所述氧化物薄膜晶体管300还包括像素电极层308。所述像素电极层308形成在所述第二钝化层307之上，且形成有第一像素电极3081和第二像素电极3082。所述第一像素电极3081与所述第二绑定焊盘3063连接。所述第二像素电极3082与所述第三源极3062连接。同样地，可以采用在所述第二钝化层307上图案化形成孔的方式实现连接。所述像素电极层308的材料可以为IZO，ITO或AZO等。\n\n[0119]如图13、图16至图19所示，所述氧化物薄膜晶体管300还包括第三保护层309；所述第三保护层309形成在所述第二钝化层307之上、并与所述第四源极3064连接。具体地，是形成在所述第四源极3064的上方或上方附近，即位于所述衬底基板100边缘处(包括边缘附近)，且靠近所述侧面导线400的一侧。所述第三保护层309的材料可以为氧化铟锡，用于抗氧化。\n\n[0120]如图16至图19所示，所述显示阵列层的每一所述像素单元还包括发光器件，设置于所述衬底基板100的顶面、且与所述氧化物薄膜晶体管300连接。如图16和图17所示，发光器件可以为微发光二极管500或有机发光二极管600。具体地，所述微发光二极管500分别连接至第一像素电极3081和第二像素电极3082。所述微发光二极管500可以通过绑定粘合材料501(如InAg等)连接至所述第一像素电极3081和所述第二像素电极3082。或者，如图18和图19所示，所述有机发光二极管600与所述第三源极3062、公共阴极3065连接。所述发光器件(如微发光二极管500或有机二极管600)采用现有结构即可，本发明不作具体限定。\n\n[0121]如图15至图19所示，所述侧面导线400形成在所述衬底基板100的侧壁，所述驱动电路层的电路单元通过所述侧面导线400电连接所述显示阵列层。具体地，所述侧面导线400形成在所述衬底基板100的侧壁所在面上，并且其一端延伸至所述低温多晶硅薄膜晶体管200的表面与所述低温多晶硅薄膜晶体管200连接、其另一端延伸至所述氧化物薄膜晶体管300的表面与所述氧化物薄膜晶体管300连接。所述侧面导线400可以通过金属化方法形成，例如印刷金属走线或其他金属化方法，此种方法简单牢固，可靠性高，精度高，制作效率高。所述侧面导线400的材料可以采用低熔点金属，例如In、Ag、Ga、Sn或者它们相互间的合金等。\n\n[0122]如图15至图19所示，所述侧面导线400可以与所述低温多晶硅薄膜晶体管200的源极或栅极、及氧化物薄膜晶体管300的源极或栅极连接。具体为：所述侧面导线400与所述低温多晶硅薄膜晶体管200的栅极、以及所述氧化物薄膜晶体管300的栅极连接；所述侧面导线400与所述低温多晶硅薄膜晶体管200的源极、以及所述氧化物薄膜晶体管300的源极连接；所述侧面导线400的一端与所述低温多晶硅薄膜晶体管200的栅极连接，其另一端与所述氧化物薄膜晶体管300的源极连接；或者，所述侧面导线400的一端与所述低温多晶硅薄膜晶体管200的源极连接，其另一端与所述氧化物薄膜晶体管300的栅极连接。例如，如图17和图19所示，所述侧面导线400的一端与所述第四源极3064连接，另一端与所述第二源极2074连接，图中在所述侧面导线400和所述第二源极2074之间设置的所述第二保护层2092、及所述侧面导线400和所述第四源极3064之间设置的所述第三保护层309是用于保护连接处防止氧化，其实际目的是使所述侧面导线400最终连接至所述低温多晶硅薄膜晶体管200的源极以及所述氧化物薄膜晶体管300的源极。如图16和图18所示，所述第四源极3064还与所述第四栅极3042连接，所述第二源极2074还与所述第二栅极2052连接，其实际目的是使所述侧面导线400最终连接至所述低温多晶硅薄膜晶体管200的栅极以及所述氧化物薄膜晶体管300的栅极。\n\n[0123]如图16至图19所示，所述显示基板还包括驱动芯片800和印刷电路板900。\n\n[0124]如图16至图19所示，所述驱动芯片800，连接至所述驱动电路层的至少一绑定焊盘；所述印刷电路板900，连接至所述驱动芯片800。具体地，如图16至图19所示，所述驱动芯片800可以通过薄膜覆晶(Chip on Film，COF)方式设置于柔性线路板700上，再通过所述柔性线路板700连接至所述驱动电路层的至少一绑定焊盘(如第一绑定焊盘2073)；所述印刷电路板900连接至所述柔性线路板700。所述驱动芯片800还可以通过玻璃覆晶(Chip onGlass，COG)方式直接绑定至所述驱动电路层的至少一绑定焊盘(如第一绑定焊盘2073)，并且连接(如通过异方性导电膜连接)至柔性线路板700；所述印刷电路板900连接至所述柔性线路板700。\n\n[0125]请参考图1至图19所示，本发明实施例还提供了一种上述显示基板的制备方法，其包括以下步骤：\n\n[0126]步骤A、如图1所示，提供一衬底基板100，所述衬底基板100具有相对的顶面与底面以及衔接所述顶面与底面的侧壁；图中A面表示衬底基板100的顶面，B面表示衬底基板100的底面。所述衬底基板100可以为玻璃基板。\n\n[0127]步骤B、在所述衬底基板的底面制备驱动电路层，所述驱动电路层包含多个电路单元，其中至少一个电路单元由低温多晶硅薄膜晶体管组成。所述电路单元包含栅极驱动电路(GOA)、解多工器电路(Demux)及扇出电路(fan-out)，皆形成于所述衬底基板100的底面。\n\n[0128]如图1至图7所示，所述低温多晶硅薄膜晶体管200的制备方法包括以下步骤：\n\n[0129]b1、如图1所示，在所述衬底基板100的底面形成遮光层201。具体地，是在所述衬底基板100的底面镀一金属膜层，图案化得到遮光层201。所述遮光层201的材料可以为Mo、Mo/Al/Mo叠层、Mo/Cu叠层、Mo/Cu/IZO叠层、IZO/Cu/IZO叠层、Mo/Cu/ITO叠层、Ni/Cu/Ni叠层、MoTiNi/Cu/MoTiNi叠层、NiCr/Cu/NiCr叠层或CuNb等。\n\n[0130]b2、如图2所示，形成第一缓冲绝缘层202，使其覆盖所述遮光层201及所述衬底基板100。具体地，是在所述遮光层201及所述衬底基板100的底面上镀一缓冲绝缘膜层，形成第一缓冲绝缘层202。所述第一缓冲绝缘层202的材料可以为SiOx、SiNx、SiNx/SiOx叠层或SiNOx等。\n\n[0131]b3、如图2所示，在所述第一缓冲绝缘层202上形成第一半导体层203。具体地，是在所述第一缓冲绝缘层202上镀一半导体膜层，图案化得到第一半导体层203。所述半导体材料为多晶硅，多晶硅可以通过非晶硅激光退火晶化或其他晶化方法获得。\n\n[0132]b4、如图3所示，在所述第一半导体层203和所述第一缓冲绝缘层202之上形成第一栅极绝缘层204。具体地，是在所述第一半导体层203和所述第一缓冲绝缘层202之上镀一绝缘膜层，形成第一栅极绝缘层204。所述第一栅极绝缘层204的材料可以为SiOx、SiNx、Al2O3/SiNx/SiOx叠层或SiOx/SiNx/SiOx叠层等。\n\n[0133]b5、如图3所示，在所述第一栅极绝缘层204之上形成第一金属膜层205，且使所述第一金属膜层205至少形成有第一栅极2051，以及对所述第一半导体层203进行掺杂处理。具体地，是在所述第一栅极绝缘层204上镀一金属膜层，形成第一金属膜层205，图案化处理得到第一栅极2051(参见图17和图19)、或者得到第一栅极2051与第二栅极2052(参见图3、图16和图18)。所述第二栅极2052用于与所述侧面导线400连接，其中所述第二栅极2052形成在所述衬底基板100的边缘处(包括边缘附近)、并且设置在靠近所述侧面导线400的一侧。所述掺杂处理是对所述第一半导体进行掺杂磷离子形成N型重掺，以最终形成nMOS晶体管；或者掺杂硼离子形成P型重掺，以最终形成pMOS晶体管。所述掺杂的区域为所述第一半导体上与所述第一源极2071和第一漏极2072对应连接的区域，并且所述掺杂可以是多次掺杂处理和/或多次图案化掺杂处理。所述第一金属膜层205的材料可以为Mo、Mo/Al叠层、Mo/Cu叠层、Mo/Cu/IZO叠层、IZO/Cu/IZO叠层、Mo/Cu/ITO叠层、Ni/Cu/Ni叠层、MoTiNi/Cu/MoTiNi叠层、NiCr/Cu/NiCr叠层或CuNb等。\n\n[0134]b6、如图4所示，形成第一介电层206，使其覆盖在所述第一金属膜层205及所述第一栅极绝缘层204之上；并对所述第一介电层206进行氢化及活化处理。具体地，是在所述第一金属膜层205及所述第一栅极绝缘层204之上镀一介电膜层，对其进行氢化及活化处理，图案化得到第一介电层206。还可以经过图案化处理形成第一通孔2061、第二通孔2062及第三通孔2063，其中所述第一通孔2061贯穿所述第一介电层206和所述第一栅极绝缘层204并通向至所述第一半导体层203；所述第二通孔2062贯穿所述第一介电层206和所述第一栅极绝缘层204、并且通向至所述第一半导体层203；所述第三通孔2063贯穿所述第一介电层206、所述第一栅极绝缘层204和所述第一缓冲绝缘层202并通向至所述遮光层201。所述第一介电层206的材料可以为SiOx、SiNx、SiNOx或SiOx/SiNx叠层等。所述氢化及活化处理的方法采用现有常规的方法即可。\n\n[0135]b7、如图5所示，在所述第一介电层206之上形成第二金属膜层207，且使所述第二金属膜层207至少形成有第一源极2071、第一漏极2072、第一绑定焊盘2073和第二源极2074。并使所述第一源极2071的一端与所述遮光层201连接、另一端与所述第一半导体层203连接；使所述第一漏极2072与所述第一半导体层203连接；使所述第二源极2074设置在所述衬底基板100边缘处(包括边缘附近)、且靠近所述侧面导线400的一侧，用于与所述侧面导线400连接。具体地，是在所述第一介电层206上镀一金属膜层，形成第二金属膜层207，图案化得到第一源极2071、第一漏极2072、第一绑定焊盘2073和第二源极2074；并使所述第一漏极2072通过所述第一通孔2061与所述第一半导体层203连接；所述第一源极2071的一端通过所述第三通孔2063与所述遮光层201连接，另一端通过所述第二通孔2062与所述第一半导体层203连接。所述第一绑定焊盘2073用于与其它元件连接。所述第二金属膜层207的材料可以为：Mo、Mo/Al叠层、Mo/Cu叠层、Mo/Cu/IZO叠层、IZO/Cu/IZO叠层、Mo/Cu/ITO叠层、Ni/Cu/Ni叠层、MoTiNi/Cu/MoTiNi叠层、NiCr/Cu/NiCr叠层或CuNb等。\n\n[0136]b8、如图6所示，形成第一钝化层208，使其覆盖在所述第二金属膜层207及所述第一介电层206之上。具体地，是在所述第二金属膜层207及所述第一介电层206之上镀一钝化膜层，形成第一钝化层208，并使其覆盖所述第一介电层206、第一源极2071、所述第一漏极2072、所述第一绑定焊盘2073和第二源极2074，还可以根据需求对钝化层进行图案化，如形成用于实现连接的孔等。所述第一钝化层208的材料可以为SiNx或SiOx等。\n\n[0137]b9、如图6所示，所述步骤B还可以包括在所述第一钝化层208之上形成第一保护膜层209，且至少形成有第一保护层2091和/或第二保护层2092。具体地，是在所述第一钝化层208之上镀一保护膜层，图案化得到第一保护层2091和/或第二保护层2092。所述第一保护层2091与所述第一绑定焊盘2073连接。所述第二保护层2092与所述第二源极2074连接。可以通过在所述第一钝化层208上图案化形成孔的方式实现连接。所述第一保护膜层209的材料可以为氧化铟锡(ITO)，用于抗氧化。\n\n[0138]b10、如图7所示，所述步骤B还可以在所述第一钝化层208及所述第一保护膜层209之上设置底面保护膜层1000，以在后续制程中保护低温多晶硅薄膜晶体管200，防止损伤等。所述底面保护膜层1000的材料可以为SiNx或SiOx等。\n\n[0139]如图8所示，制备完所述低温多晶硅薄膜晶体管200后，翻转所述衬底基板100，以在所述衬底基板100的顶面制备所述显示阵列层。\n\n[0140]如图16至图19所示，所述显示阵列层的每一所述像素单元还包括发光器件，设置于所述衬底基板100的顶面、且与所述氧化物薄膜晶体管300连接。所述步骤B中还包括b11、在所述衬底基板100的顶面制备发光器件(例如微发光二极管500或有机发光二极管600)，并使所述发光器件与所述氧化物薄膜晶体管300连接。例如，如图16和图17所示，可以在所述衬底基板100的顶面制备一微发光二极管500，使其与第一像素电极3081和第二像素电极3082连接。所述微发光二极管500可以通过绑定粘合材料501(如InAg等)连接至所述第一像素电极3081和所述第二像素电极3082。如图18和图19所示，还可以在所述衬底基板100的顶面制备一有机发光二极管600，使其与所述第三源极3062、公共阴极3065连接。所述发光器件(如微发光二极管500或有机发光二极管600)的制备方法采用现有方法即可，本发明不作具体限定。\n\n[0141]步骤C、在所述衬底基板100的顶面制备显示阵列层，所述显示阵列层包含多个阵列分布的像素单元，每一像素单元包含至少一氧化物薄膜晶体管300。\n\n[0142]如图9至图13所示，所述氧化物薄膜晶体管300可以为铟镓锌氧化物(IGZO)薄膜晶体管。所述氧化物薄膜晶体管300的制备方法包括如下步骤：\n\n[0143]c1、如图9所示，形成第二缓冲绝缘层301，使其覆盖在所述衬底基板100的顶面之上。具体地，是在所述衬底基板100的顶面镀一缓冲绝缘膜层，形成第二缓冲绝缘层301。所述第二缓冲绝缘层301的材料可以为SiOx、SiNx、SiNx/SiOx叠层或SiNOx等。\n\n[0144]c2、如图9所示，在所述第二缓冲绝缘层301之上形成第二半导体层302。具体地，是在所述第二缓冲绝缘层301之上镀一半导体膜层，图案化得到第二半导体层302。所述第二半导体层302的材料可以为氧化物半导体，如IGZO、IGTO、IGZO、IGO、IZO、AIZO或ATZO等。\n\n[0145]c3、如图10所示，形成栅极绝缘膜层303，使其形成在所述第二半导体层302及所述第二缓冲绝缘层301之上，且至少形成有位于所述第二半导体层302之上的第二栅极绝缘层3031。具体地，是在所述第二半导体层302及所述第二缓冲绝缘层301之上镀一绝缘膜层，形成所述栅极绝缘膜层303，图案化得到第二栅极绝缘层3031(参见图17和图19)、或者得到第二栅极绝缘层3031与第三栅极绝缘层3032(参见图10)。所述栅极绝缘膜层303的材料可以为SiOx、SiNx、Al2O3/SiNx/SiOx叠层或SiOx/SiNx/SiOx叠层等。\n\n[0146]c4、如图10所示，在所述栅极绝缘膜层303之上形成第三金属膜层304，且至少形成有位于所述第二栅极绝缘层3031之上的第三栅极3041。具体地，是在所述栅极绝缘膜层303之上镀一金属膜层，形成第三金属膜层304，图案化得到第三栅极3041(参见图17和图19)、或者得到第三栅极3041及第四栅极3042(参见图10)。所述第三金属膜层304的材料可以为Mo、Mo/Al叠层、Mo/Cu叠层、Mo/Cu/IZO叠层、IZO/Cu/IZO叠层、Mo/Cu/ITO叠层、Ni/Cu/Ni叠层、MoTiNi/Cu/MoTiNi叠层、NiCr/Cu/NiCr叠层或CuNb等。\n\n[0147]c5、如图11所示，形成第二介电层305，使其覆盖在所述第二缓冲绝缘层301、所述第二半导体层302、所述栅极绝缘膜层303及第三金属膜层304之上。具体地，镀一介电膜层，形成第二介电层305，对所述第二介电层305图案化形成第四通孔3051和第五通孔3052，使所述第四通孔3051和第五通孔3052均通向所述第二半导体层302。所述第二介电层305的材料可以为SiOx，SiNx或SiNOx等。\n\n[0148]c6、如图12所示，在所述第二介电层305之上形成第四金属膜层306，且使所述第四金属膜层306至少形成有第三源极3062、第二漏极3061、第二绑定焊盘3063或公共阴极3065、及第四源极3064；其中使所述漏极与所述第二半导体层302连接；使所述第三源极3062与所述第二半导体层302连接；使所述第四源极3064设置在所述衬底基板100边缘处(包括边缘附近)、且靠近所述侧面导线400的一侧，并使所述第四源极3064与所述侧面导线400连接。具体地，是在第二介电层305之上镀一金属膜层，得到第四金属膜层306，图案化得到第三源极3062、第二漏极3061、第二绑定焊盘3063或公共阴极3065、及第四源极3064；使所述漏极通过所述第四通孔3051与所述第二半导体层302连接；使所述第三源极3062通过所述第五通孔3052与所述第二半导体层302连接；所述第四源极3064用于与所述侧面导线400连接；所述第二绑定焊盘3063或所述公共阴极3065用于与其它元件连接。所述第四金属膜层306的材料可以为Mo、Mo/Al叠层、Mo/Cu叠层、Mo/Cu/IZO叠层、IZO/Cu/IZO叠层、Mo/Cu/ITO叠层、Ni/Cu/Ni叠层、MoTiNi/Cu/MoTiNi叠层、NiCr/Cu/NiCr叠层、CuNb等。\n\n[0149]c7、如图12所示，形成第二钝化层307，使其覆盖在所述第四金属膜层306及所述第二介电层305之上。具体地，是在所述第四金属膜层306及所述第二介电层305之上镀一钝化膜层，形成第二钝化层307，并可以根据需求进行图案化，如形成孔等。所述第二钝化层307的材料可以为SiOx、SiOx/SiNx叠层或Al2O3/SiOx叠层等。\n\n[0150]c8、如图13所示，所述步骤B还包括在所述第二钝化层307之上形成像素电极层308，且形成有第一像素电极3081和第二像素电极3082。所述第一像素电极3081与所述第二绑定焊盘3063连接；所述第二像素电极3082与所述第三源极3062连接。具体地，是在所述第二钝化层307上镀一像素电极膜层，得到像素电极层308，图案化得到第一像素电极3081和第二像素电极3082，所述第一像素电极3081与所述第二绑定焊盘3063连接、以及所述第二像素电极3082与所述第三源极3062连接。所述连接可以通过图案化形成孔的方式实现。所述像素电极层308的材料可以为IZO，ITO或AZO等。\n\n[0151]c9、如图13所示，所述步骤B还包括在所述第二钝化层307之上形成第三保护层309，所述第三保护层309形成在所述第二钝化层307之上，并使所述第三保护层309与所述第四源极3064连接。具体地，所述第三保护层309形成在所述衬底基板100边缘处(包括边缘附近)，且靠近所述侧面导线400的一侧。所述第三保护层309的材料可以为氧化铟锡，用于抗氧化。\n\n[0152]c10、如图14所示，去除所述衬底基板100底部的所述底面保护膜层1000。\n\n[0153]步骤D、如图15所示，在所述衬底基板100的侧壁制备侧面导线400，使所述驱动电路层的电路单元通过所述侧面导线400电连接所述显示阵列层。具体地，通过金属化方法(例如印刷金属走线或其他金属化方法)在所述衬底基板100的侧壁所在面形成侧面导线400，并且使所述侧面导线400的一端延伸至所述低温多晶硅薄膜晶体管200的表面与所述低温多晶硅薄膜晶体管200连接、其另一端延伸至所述氧化物薄膜晶体管300的表面与所述氧化物薄膜晶体管300连接。所述侧面导线400的材料可以采用低熔点金属，例如In、Ag、Ga、Sn或者它们相互间的合金等。制备侧面导线400的方法简单，所制备的侧面导线400牢固，可靠性高，精度高，制作效率高。如图15所示，在所述侧面导线400在显示基板的加工过程中还可以覆盖一层侧面导线保护膜层1100，以防止加工过程中受到损伤。\n\n[0154]如图15所示，所述侧面导线400可以与所述低温多晶硅薄膜晶体管200的源极或栅极、以及氧化物薄膜晶体管300的源极或栅极连接。例如，如图17和图19所示，所述侧面导线400的一端与所述第四源极3064连接，另一端与所述第二源极2074连接，图中在所述侧面导线400和所述第二源极2074之间设置的所述第二保护层2092、以及所述侧面导线400和所述第四源极3064之间设置的所述第三保护层309是用于保护连接处防止氧化，其实际目的是使所述侧面导线400最终连接至所述低温多晶硅薄膜晶体管200的源极以及所述氧化物薄膜晶体管300的源极。如图16和图18所示，所述第四源极3064还与所述第四栅极3042连接，所述第二源极2074还与所述第二栅极2052连接，实际最终目的是使所述侧面导线400最终连接至所述低温多晶硅薄膜晶体管200的栅极以及所述氧化物薄膜晶体管300的栅极。\n\n[0155]如图16至图19所示，所述显示基板的制备方法还包括步骤E、将驱动芯片800连接至所述驱动电路层的至少一绑定焊盘。以及步骤F、将印刷电路板900连接至所述驱动芯片800。如图16至图19所示，所述驱动芯片800可以通过薄膜覆晶(Chip on Film，COF)方式设置于柔性线路板700上，再通过所述柔性线路板700连接至所述驱动电路层的至少一绑定焊盘(如第一绑定焊盘2073)；所述印刷电路板900连接至所述柔性线路板700。具体地，所述驱动芯片800通过所述柔性线路板700连接至所述驱动电路层的低温多晶硅薄膜晶体管200的第一绑定焊盘2073。所述驱动芯片800还可以通过玻璃覆晶(Chip on Glass，COG)方式直接绑定至所述驱动电路层的至少一绑定焊盘(如第一绑定焊盘2073)，并且连接(如通过异方性导电膜连接)至柔性线路板700；所述印刷电路板900连接至所述柔性线路板700。\n\n[0156]本实施例将显示阵列层形成于衬底基板100的顶面，而将驱动电路层形成于衬底基板100的底面，再通过侧面导线400连接，由于栅极驱动电路、解多工器电路及扇出电路等电路单元皆制作于衬底基板100的底面的关系，显示阵列层在衬底基板100的顶面上所能提供的显示区域可以最大地延伸到衬底基板100的边缘，故本实施例提供的方案有利于制作高解析度无边框显示基板。此外，驱动电路层采用低温多晶硅薄膜晶体管200，显示阵列层采用氧化物薄膜晶体管300，可以利用氧化物薄膜晶体管300的低漏电流及低温多晶硅薄膜晶体管200的高电流通过能力，降低显示的功耗。在制程上，先在所述衬底基板100的底面制备低温多晶硅薄膜晶体管200用于形成驱动电路，再在所述衬底基板100的顶面制备氧化物薄膜晶体管300用于显示，可以避免将氧化物薄膜晶体管300用于制作衬底基板100底面的驱动电路时受衬底基板100顶面的薄膜晶体管制作的热影响而失效。\n\n[0157]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0158]以上对本发明实施例进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，具体涉及一种显示基板及其制备方法。\n\n背景技术\n\n[0002]在显示领域里，如LCD、OLED、LED屏幕，单一体屏幕越大，制作成本越高，因此一般的超大屏幕通常采用若干块小的屏幕拼接一起形成，以降低单位面积的成本。由于一般的屏幕都会带有边框，这会导致拼接屏的显示区域带有若干条非显示暗区，降低显示品质。另外，对于移动显示设备，如手机或者手表，具有更高的屏占比也是高品质显示屏的追求目标之一。因此，降低拼接屏的拼接缝的大小，实现无边框显示，已经成为业界热门的研究对象。\n\n发明内容\n\n[0003]为解决降低拼接屏的拼接缝尺寸、实现无边框显示的问题，本发明实施例提供一种显示基板及其制备方法。\n\n[0004]第一方面，本发明实施例提供了一种显示基板，其包括：\n\n[0005]一衬底基板，具有相对的顶面与底面以及衔接所述顶面与底面的侧壁；\n\n[0006]驱动电路层，形成于所述衬底基板的底面，其包含多个电路单元，其中至少一个电路单元由低温多晶硅薄膜晶体管组成；\n\n[0007]显示阵列层，形成于所述衬底基板的顶面，包含多个阵列分布的像素单元，每一像素单元包含至少一氧化物薄膜晶体管；及\n\n[0008]侧面导线，形成于所述衬底基板的侧壁；\n\n[0009]其中所述驱动电路层的电路单元通过所述侧面导线电连接所述显示阵列层。\n\n[0010]进一步地，所述电路单元包含栅极驱动电路、解多工器电路及扇出电路，皆形成于所述衬底基板的底面。\n\n[0011]进一步地，每一所述像素单元还包括发光器件，设置于所述衬底基板的顶面、且与所述氧化物薄膜晶体管连接；以及\n\n[0012]所述显示基板还包括：\n\n[0013]驱动芯片，连接至所述驱动电路层的至少一绑定焊盘；及\n\n[0014]印刷电路板，连接至所述驱动芯片。\n\n[0015]更进一步地，所述驱动芯片通过薄膜覆晶方式设置于柔性线路板上，再通过所述柔性线路板连接至所述驱动电路层的至少一绑定焊盘；所述印刷电路板连接至所述柔性线路板；或者\n\n[0016]所述驱动芯片通过玻璃覆晶方式直接绑定至所述驱动电路层的至少一绑定焊盘，并连接至柔性线路板；所述印刷电路板连接至所述柔性线路板。\n\n[0017]进一步地，所述发光器件为微发光二极管或有机发光二极管。\n\n[0018]进一步地，所述低温多晶硅薄膜晶体管包括：\n\n[0019]遮光层，形成在所述衬底基板的底面；\n\n[0020]第一缓冲绝缘层，覆盖在所述遮光层及所述衬底基板的底面之上；\n\n[0021]第一半导体层，形成在所述第一缓冲绝缘层之上；\n\n[0022]第一栅极绝缘层，覆盖在所述第一半导体层和所述第一缓冲绝缘层之上；\n\n[0023]第一金属膜层，形成在所述第一栅极绝缘层之上，且至少形成有第一栅极；\n\n[0024]第一介电层，覆盖在所述第一金属膜层及所述第一栅极绝缘层之上；\n\n[0025]第二金属膜层，形成在所述第一介电层之上，且至少形成有第一源极、第一漏极、第一绑定焊盘和第二源极；以及\n\n[0026]第一钝化层，覆盖在所述第二金属膜层及所述第一介电层之上；\n\n[0027]其中：所述第一源极的一端与所述遮光层连接、另一端与所述第一半导体层连接；所述第一漏极与所述第一半导体层连接；所述第二源极设在所述衬底基板边缘处、且靠近所述侧面导线的一侧，并与所述侧面导线连接。\n\n[0028]进一步地，所述氧化物薄膜晶体管包括：\n\n[0029]第二缓冲绝缘层，覆盖在所述衬底基板的顶面之上；\n\n[0030]第二半导体层，形成在所述第二缓冲绝缘层之上；\n\n[0031]栅极绝缘膜层，形成在所述第二半导体层及所述第二缓冲绝缘层之上，且至少形成位于所述第二半导体层之上的第二栅极绝缘层；\n\n[0032]第三金属膜层，形成在所述栅极绝缘膜层之上，且至少形成有位于所述第二栅极绝缘层之上的第三栅极；\n\n[0033]第二介电层，覆盖在所述第二缓冲绝缘层、所述第二半导体层、所述栅极绝缘膜层及第三金属膜层之上；\n\n[0034]第四金属膜层，形成在所述第二介电层之上，且至少形成有第三源极、第二漏极、第二绑定焊盘或公共阴极、及第四源极；\n\n[0035]第二钝化层，覆盖在所述第四金属膜层及所述第二介电层之上；\n\n[0036]其中：所述漏极与所述第二半导体层连接；所述第三源极与所述第二半导体层连接；所述第四源极设置在所述衬底基板边缘处、且靠近所述侧面导线的一侧，并与所述侧面导线连接。\n\n[0037]第二方面，本发明还提供了一种显示基板的制备方法，其包括以下步骤：\n\n[0038]步骤A、提供一衬底基板，所述衬底基板具有相对的顶面与底面以及衔接所述顶面与底面的侧壁；\n\n[0039]步骤B、在所述衬底基板的底面制备驱动电路层，所述驱动电路层包含多个电路单元，其中至少一个电路单元由低温多晶硅薄膜晶体管组成；\n\n[0040]步骤C、在所述衬底基板的顶面制备显示阵列层，所述显示阵列层包含多个阵列分布的像素单元，每一像素单元包含至少一氧化物薄膜晶体管；\n\n[0041]步骤D、在所述衬底基板的侧壁制备侧面导线，使所述驱动电路层的电路单元通过所述侧面导线电连接所述显示阵列层。\n\n[0042]进一步地，在所述步骤B中，所述电路单元包含栅极驱动电路、解多工器电路及扇出电路，皆形成于所述衬底基板的底面。\n\n[0043]进一步地，在所述步骤C中，每一所述像素单元还包括发光器件，设置于所述衬底基板的顶面、且与所述氧化物薄膜晶体管连接；\n\n[0044]所述显示基板还包括以下步骤：\n\n[0045]步骤E、将驱动芯片连接至所述驱动电路层的至少一绑定焊盘；及\n\n[0046]步骤F、将印刷电路板连接至所述驱动芯片。\n\n[0047]更进一步地，在所述步骤E中，所述驱动芯片通过薄膜覆晶方式设置于柔性线路板上，再通过所述柔性线路板连接至所述驱动电路层的至少一绑定焊盘；所述印刷电路板连接至所述柔性线路板；或者\n\n[0048]所述驱动芯片通过玻璃覆晶方式直接绑定至所述驱动电路层的至少一绑定焊盘，并且所述驱动芯片连接至柔性线路板；所述印刷电路板连接至所述柔性线路板。\n\n[0049]进一步地，所述发光器件为微发光二极管或有机发光二极管。\n\n[0050]进一步地，所述低温多晶硅薄膜晶体管的制备方法包括如下步骤：\n\n[0051]a1、在所述衬底基板的底面形成遮光层；\n\n[0052]a2、形成第一缓冲绝缘层，使其覆盖所述遮光层及所述衬底基板；\n\n[0053]a3、在所述第一缓冲绝缘层上形成第一半导体层；\n\n[0054]a4、在所述第一半导体层和所述第一缓冲绝缘层之上形成第一栅极绝缘层；\n\n[0055]a5、在所述第一栅极绝缘层之上形成第一金属膜层，且使所述第一金属膜层至少形成有第一栅极；并对所述第一半导体层进行掺杂处理；\n\n[0056]a6、形成第一介电层，使其覆盖在所述第一金属膜层及所述第一栅极绝缘层之上；\n\n[0057]a7、在所述第一介电层之上形成第二金属膜层，且使所述第二金属膜层至少形成有第一源极、第一漏极、第一绑定焊盘和第二源极；其中：使所述第一源极的一端与所述遮光层连接、另一端与所述第一半导体层连接；使所述第一漏极与所述第一半导体层连接；使所述第二源极设置在所述衬底基板边缘处、且靠近所述侧面导线的一侧，并使所述第二源极与所述侧面导线连接；以及\n\n[0058]a8、形成第一钝化层，使其覆盖在所述第二金属膜层及所述第一介电层之上。\n\n[0059]进一步地，所述氧化物薄膜晶体管的制备步骤包括如下步骤：\n\n[0060]b1、形成第二缓冲绝缘层，使其覆盖在所述衬底基板的顶面之上；\n\n[0061]b2、在所述第二缓冲绝缘层之上形成第二半导体层；\n\n[0062]b3、形成栅极绝缘膜层，使其形成在所述第二半导体层及所述第二缓冲绝缘层之上，且至少形成有位于所述第二半导体层之上的第二栅极绝缘层；\n\n[0063]b4、在所述栅极绝缘膜层之上形成第三金属膜层，且至少形成有位于所述第二栅极绝缘层之上的第三栅极；\n\n[0064]b5、形成第二介电层，使其覆盖在所述第二缓冲绝缘层、所述第二半导体层、所述栅极绝缘膜层及第三金属膜层之上；\n\n[0065]b6、在所述第二介电层之上形成第四金属膜层，且使所述第四金属膜层至少形成有第三源极、第二漏极、第二绑定焊盘或公共阴极、及第四源极；其中：使所述漏极与所述第二半导体层连接；使所述第三源极与所述第二半导体层连接；使所述第四源极设置在所述衬底基板边缘处、且靠近所述侧面导线的一侧，并使所述第四源极与所述侧面导线连接；以及\n\n[0066]b7、形成第二钝化层，使其覆盖在所述第四金属膜层及所述第二介电层之上。\n\n[0067]本发明有益效果：\n\n[0068]本发明将显示阵列层形成于衬底基板的顶面，而将驱动电路层形成于衬底基板的底面，再通过侧面导线将二者连接，由于栅极驱动电路、解多工器电路及扇出电路等电路单元皆制作于衬底基板的底面的关系，显示阵列层在衬底基板的顶面上所能提供的显示区域可以最大地延伸到衬底基板的边缘，故该方案有利于制作高解析度无边框显示基板。此外，驱动电路层采用低温多晶硅薄膜晶体管，显示阵列层采用氧化物薄膜晶体管，可以利用氧化物薄膜晶体管的低漏电流及低温多晶硅薄膜晶体管的高电流通过能力，降低显示的功耗。\n\n附图说明\n\n[0069]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0070]图1为本发明实施例实行步骤B中步骤b1的示意图。\n\n[0071]图2为本发明实施例实行步骤B中步骤b2至b3的示意图。\n\n[0072]图3为本发明实施例实行步骤B中步骤b4至b5的示意图。\n\n[0073]图4为本发明实施例实行步骤B中步骤b6的示意图。\n\n[0074]图5为本发明实施例实行步骤B中步骤b7的示意图。\n\n[0075]图6为本发明实施例实行步骤B中步骤b8至b9的示意图。\n\n[0076]图7为本发明实施例实行步骤B中步骤b10的示意图。\n\n[0077]图8为本发明实施例实行翻转所述衬底基板的示意图。\n\n[0078]图9为本发明实施例实行步骤C中步骤c1至c2的示意图。\n\n[0079]图10为本发明实施例实行步骤C中步骤c3至c4的示意图。\n\n[0080]图11为本发明实施例实行步骤C中步骤c5的示意图。\n\n[0081]图12为本发明实施例实行步骤C中步骤c6至c7的示意图。\n\n[0082]图13为本发明实施例实行步骤C中步骤b8至b9的示意图。\n\n[0083]图14为本发明实施例实行步骤C中步骤c10的示意图。\n\n[0084]图15为本发明实施例实行步骤D的示意图。\n\n[0085]图16为本发明实施例实行步骤b11、及步骤E至步骤F的示意图。\n\n[0086]图17为本发明另一实施例实行步骤b11、及步骤E至步骤F的示意图。\n\n[0087]图18为本发明另一实施例实行步骤b11、及步骤E至步骤F的示意图。\n\n[0088]图19为本发明另一实施例实行步骤b11、及步骤E至步骤F的示意图。\n\n具体实施方式\n\n[0089]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。\n\n[0090]具体的，请参阅图1至图19，本发明实施例提供一种显示基板，其包括：一衬底基板100，驱动电路层，显示阵列层及侧面导线400。\n\n[0091]如图1至图19所示，所述衬底基板100具有相对的顶面与底面以及衔接所述顶面与底面的侧壁，图中A面表示衬底基板100的顶面，B面表示衬底基板100的底面。所述衬底基板100可以为玻璃基板。\n\n[0092]所述驱动电路层，形成于所述衬底基板100的底面，其包含多个电路单元，其中至少一个电路单元由低温多晶硅薄膜晶体管200组成。所述电路单元可以包含栅极驱动电路(GOA)、解多工器电路(Demux)及扇出电路(fan-out)，皆形成于所述衬底基板100的底面。在一实施例中，所述栅极驱动电路与解多工器电路等通过薄膜晶体管实现其功能的电路单元可以由低温多晶硅薄膜晶体管200组成。\n\n[0093]如图1至图6、图16至图19所示，所述低温多晶硅薄膜晶体管200形成于所述衬底基板100的底面。所述低温多晶硅薄膜晶体管200包括遮光层201，第一缓冲绝缘层202，第一半导体层203，第一栅极绝缘层204，第一金属膜层205，第一介电层206，第二金属膜层207和第一钝化层208。\n\n[0094]如图1、图16至图19所示，所述遮光层201形成在所述衬底基板100的底面。所述遮光层201的材料可以为Mo、Mo/Al/Mo叠层、Mo/Cu叠层、Mo/Cu/IZO叠层、IZO/Cu/IZO叠层、Mo/Cu/ITO叠层、Ni/Cu/Ni叠层、MoTiNi/Cu/MoTiNi叠层、NiCr/Cu/NiCr叠层或CuNb等。\n\n[0095]如图2、图16至图19所示，所述第一缓冲绝缘层202覆盖在所述遮光层201及所述衬底基板100的底面之上。所述第一缓冲绝缘层202的材料可以为SiOx、SiNx、SiNx/SiOx叠层或SiNOx等。\n\n[0096]如图2、图16至图19所示，所述第一半导体层203形成在所述第一缓冲绝缘层202之上。所述第一半导体层203的材料为多晶硅，多晶硅可以通过非晶硅激光退火晶化或其他晶化方法获得。所述第一半导体层203经过掺杂处理，在所述第一半导体层203上预先定义有与源极(如第一源极2071)连接的区域以及与漏极(如第一漏极2072)连接的区域，所述掺杂处理是对所述第一半导体层203上与源极和漏极对应连接的区域掺杂磷离子形成N型重掺，以最终形成nMOS晶体管；或者掺杂硼离子形成P型重掺以形成pMOS晶体管。\n\n[0097]如图3、图16至图19所示，所述第一栅极绝缘层204覆盖在所述第一半导体层203和所述第一缓冲绝缘层202之上。所述第一栅极绝缘层204的材料可以为SiOx、SiNx、Al2O3/SiNx/SiOx叠层或SiOx/SiNx/SiOx叠层等。\n\n[0098]如图3、图16至图19所示，所述第一金属膜层205形成在所述第一栅极绝缘层204之上，且至少形成有第一栅极2051。在一实施例中，所述第一金属膜层205只形成有第一栅极2051(参见图17和图19)。在另一实施例中，所述第一金属膜层205除形成第一栅极2051以外，还形成有第二栅极2052(参见图3、图16和图18)，所述第二栅极2052用于与所述侧面导线400连接，所述第二栅极2052形成在所述衬底基板100的边缘处(包括边缘附近)、并且设置在靠近所述侧面导线400的一侧。所述第一金属膜层205的材料可以为Mo、Mo/Al叠层、Mo/Cu叠层、Mo/Cu/IZO叠层、IZO/Cu/IZO叠层、Mo/Cu/ITO叠层、Ni/Cu/Ni叠层、MoTiNi/Cu/MoTiNi叠层、NiCr/Cu/NiCr叠层或CuNb等。\n\n[0099]如图4、图16至图19所示，所述第一介电层206覆盖在所述第一金属膜层205及所述第一栅极绝缘层204之上。具体地，当所述第一金属膜层205只形成有第一栅极2051时，所述第一介电层206覆盖在所述第一栅极2051及所述第一栅极绝缘层204之上(参见图17和图19)；当所述第一金属膜层205还形成有第二栅极2052时，则所述第一介电层206还覆盖所述第二栅极2052(参见图4、图16和图18)。所述第一介电层206的材料可以为SiOx、SiNx、SiNOx或SiOx/SiNx叠层等。所述第一介电层206还经过氢化及活化处理，本发明不对氢化及活化方法作具体限定，采用现有常规的方法即可。\n\n[0100]如图5、图16至图19所示，所述第二金属膜层207形成在所述第一介电层206之上，且至少形成有第一源极2071、第一漏极2072、第一绑定焊盘2073和第二源极2074。所述第二金属膜层207的材料可以为：Mo、Mo/Al叠层、Mo/Cu叠层、Mo/Cu/IZO叠层、IZO/Cu/IZO叠层、Mo/Cu/ITO叠层、Ni/Cu/Ni叠层、MoTiNi/Cu/MoTiNi叠层、NiCr/Cu/NiCr叠层或CuNb等。\n\n[0101]如图5、图16至图19所示，所述第一漏极2072与所述第一半导体层203连接。可以通过如下方式实现：如图4所示，开设第一通孔2061，使其贯穿所述第一介电层206和所述第一栅极绝缘层204并通向至所述第一半导体层203，所述第一漏极2072通过所述第一通孔2061与所述第一半导体层203连接。\n\n[0102]如图5、图16至图19所示，所述第一源极2071的一端与所述遮光层201连接、另一端与所述第一半导体层203连接。可以通过如下方式实现：如图4所示，开设第三通孔2063，使其贯穿所述第一介电层206、所述第一栅极绝缘层204和所述第一缓冲绝缘层202并通向至所述遮光层201；所述第一源极2071的一端通过所述第三通孔2063与所述遮光层201连接。开设第二通孔2062，使其贯穿所述第一介电层206和所述第一栅极绝缘层204、并且通向至所述第一半导体层203；所述第一源极2071的另一端通过所述第二通孔2062与所述第一半导体层203连接。\n\n[0103]如图5、图16至图19所示，所述第二源极2074设在所述衬底基板100边缘处(包括边缘附近)、且靠近所述侧面导线400的一侧，用于与所述侧面导线400连接。\n\n[0104]如图5、图16至图19所示，所述第一绑定焊盘2073用于与其它元件连接。\n\n[0105]如图6、图16至图19所示，所述第一钝化层208覆盖在所述第二金属膜层207及所述第一介电层206之上。具体地，是覆盖所述第一介电层206、第一源极2071、所述第一漏极2072、所述第一绑定焊盘2073和第二源极2074。所述第一钝化层208的材料可以为SiNx或SiOx等。\n\n[0106]如图6、图16至图19所示，所述低温多晶硅薄膜晶体管200还包括第一保护膜层209。所述第一保护膜层209形成于所述第一钝化层208之上，且至少形成有第一保护层2091和/或第二保护层2092。所述保护膜层的材料可以为氧化铟锡(ITO)，用于抗氧化。所述第一保护层2091与所述第一绑定焊盘2073连接；所述第二保护层2092与所述第二源极2074连接。可以通过在所述第一钝化层208上图案化形成孔的方式实现连接。\n\n[0107]所述显示阵列层，形成于所述衬底基板100的顶面，包含多个阵列分布的像素单元，每一像素单元包含至少一氧化物薄膜晶体管300。所述氧化物薄膜晶体管300，可以是例如铟镓锌氧化物(IGZO)薄膜晶体管。\n\n[0108]如图9至图19所示，所述氧化物薄膜晶体管300形成于所述衬底基板100的顶面。所述氧化物薄膜晶体管300包括第二缓冲绝缘层301，第二半导体层302，栅极绝缘膜层303，第三金属膜层304，第二介电层305，第四金属膜层306和第二钝化层307。\n\n[0109]如图9、图16至图19所示，所述第二缓冲绝缘层301覆盖在所述衬底基板100的顶面之上。所述第二缓冲绝缘层301的材料可以为SiOx、SiNx、SiNx/SiOx叠层或SiNOx等。\n\n[0110]如图9、图16至图19所示，所述第二半导体层302形成在所述第二缓冲绝缘层301之上。所述第二半导体层302的材料可以为氧化物半导体，如IGZO、IGTO、IGZO、IGO、IZO、AIZO或ATZO等。\n\n[0111]如图10、图16至图19所示，所述栅极绝缘膜层303形成在所述第二半导体层302及所述第二缓冲绝缘层301之上，且至少形成位于所述第二半导体层302之上的第二栅极绝缘层3031。例如：在一实施例中，所述栅极绝缘膜层303仅形成有第二栅极绝缘层3031，所述第二栅极绝缘层3031位于所述第二半导体层302之上。在另一实施例中，所述栅极绝缘膜层303除形成有所述第二栅极绝缘层3031以外，还形成有第三栅极绝缘层3032，所述第三栅极绝缘层3032位于所述第二缓冲绝缘层301上、并且设置在所述衬底基板100边缘处(包括边缘附近)、靠近所述侧面导线400的一侧。所述栅极绝缘膜层303的材料可以为SiOx、SiNx、Al2O3/SiNx/SiOx叠层或SiOx/SiNx/SiOx叠层等。\n\n[0112]如图10、图16至图19所示，所述第三金属膜层304形成在所述栅极绝缘膜层303之上，且至少形成有位于所述第二栅极绝缘层3031之上的第三栅极3041。在一实施例中，所述第三金属膜层304只形成有第三栅极3041(参见图17和图19)，所述第三栅极3041位于所述第二栅极绝缘层3031之上。在另一实施例中，所述第三金属膜层304除形成所述第三栅极3041以外，还形成有第四栅极3042(参见图10、图16和图18)，所述第四栅极3042位于所述第三栅极绝缘层3032之上。所述第三金属膜层304的材料可以为Mo、Mo/Al叠层、Mo/Cu叠层、Mo/Cu/IZO叠层、IZO/Cu/IZO叠层、Mo/Cu/ITO叠层、Ni/Cu/Ni叠层、MoTiNi/Cu/MoTiNi叠层、NiCr/Cu/NiCr叠层或CuNb等。\n\n[0113]如图11、图16至图19所示，所述第二介电层305覆盖在所述第二缓冲绝缘层301、所述第二半导体层302、所述栅极绝缘膜层303及第三金属膜层304之上。具体地，所述第二介电层305覆盖所述第二缓冲绝缘层301、所述第二半导体层302、所述第二栅极绝缘层3031及所述第三栅极3041(参见图17和图19)；或者所述第二介电层305覆盖所述第二缓冲绝缘层301、所述第二半导体层302、所述第二栅极绝缘层3031、所述第三栅极绝缘层3032、所述第三栅极3041和所述第四栅极3042(参见图4、图16和图18)。所述第二介电层305的材料可以为SiOx、SiNx或SiNOx等。\n\n[0114]如图12、图16至图19所示，所述第四金属膜层306形成在所述第二介电层305之上，且至少形成有第二漏极3061、第三源极3062、第二绑定焊盘3063或公共阴极3065、及第四源极3064。所述第四金属膜层306的材料可以为Mo、Mo/Al叠层、Mo/Cu叠层、Mo/Cu/IZO叠层、IZO/Cu/IZO叠层、Mo/Cu/ITO叠层、Ni/Cu/Ni叠层、MoTiNi/Cu/MoTiNi叠层、NiCr/Cu/NiCr叠层、CuNb等。\n\n[0115]如图12、图16至图19所示，所述漏极与所述第二半导体层302连接；所述第三源极3062与所述第二半导体层302连接。可以通过如下方式实现：如图11所示，在所述第二介电层305上开设第四通孔3051和第五通孔3052；使所述第四通孔3051和第五通孔3052皆通向所述第二半导体层302，使所述漏极通过所述第四通孔3051与所述第二半导体层302连接，使所述第三源极3062通过所述第五通孔3052与所述第二半导体层302连接。\n\n[0116]如图12、图16至图19所示，所述第四源极3064设置在所述衬底基板100边缘处(包括边缘附近)、且靠近所述侧面导线400的一侧，用于与所述侧面导线400连接。所述第二绑定焊盘3063或所述公共阴极3065用于与其它元件连接。\n\n[0117]如图12、图16至图19所示，所述第二钝化层307覆盖在所述第四金属膜层306及所述第二介电层305之上。具体地，是覆盖所述第二介电层305、第三源极3062、第二漏极3061、第二绑定焊盘3063或公共阴极3065、及第四源极3064。所述第二钝化层307的材料可以为SiOx、SiOx/SiNx叠层或Al2O3/SiOx叠层等。\n\n[0118]如图13、图16至图19所示，所述氧化物薄膜晶体管300还包括像素电极层308。所述像素电极层308形成在所述第二钝化层307之上，且形成有第一像素电极3081和第二像素电极3082。所述第一像素电极3081与所述第二绑定焊盘3063连接。所述第二像素电极3082与所述第三源极3062连接。同样地，可以采用在所述第二钝化层307上图案化形成孔的方式实现连接。所述像素电极层308的材料可以为IZO，ITO或AZO等。\n\n[0119]如图13、图16至图19所示，所述氧化物薄膜晶体管300还包括第三保护层309；所述第三保护层309形成在所述第二钝化层307之上、并与所述第四源极3064连接。具体地，是形成在所述第四源极3064的上方或上方附近，即位于所述衬底基板100边缘处(包括边缘附近)，且靠近所述侧面导线400的一侧。所述第三保护层309的材料可以为氧化铟锡，用于抗氧化。\n\n[0120]如图16至图19所示，所述显示阵列层的每一所述像素单元还包括发光器件，设置于所述衬底基板100的顶面、且与所述氧化物薄膜晶体管300连接。如图16和图17所示，发光器件可以为微发光二极管500或有机发光二极管600。具体地，所述微发光二极管500分别连接至第一像素电极3081和第二像素电极3082。所述微发光二极管500可以通过绑定粘合材料501(如InAg等)连接至所述第一像素电极3081和所述第二像素电极3082。或者，如图18和图19所示，所述有机发光二极管600与所述第三源极3062、公共阴极3065连接。所述发光器件(如微发光二极管500或有机二极管600)采用现有结构即可，本发明不作具体限定。\n\n[0121]如图15至图19所示，所述侧面导线400形成在所述衬底基板100的侧壁，所述驱动电路层的电路单元通过所述侧面导线400电连接所述显示阵列层。具体地，所述侧面导线400形成在所述衬底基板100的侧壁所在面上，并且其一端延伸至所述低温多晶硅薄膜晶体管200的表面与所述低温多晶硅薄膜晶体管200连接、其另一端延伸至所述氧化物薄膜晶体管300的表面与所述氧化物薄膜晶体管300连接。所述侧面导线400可以通过金属化方法形成，例如印刷金属走线或其他金属化方法，此种方法简单牢固，可靠性高，精度高，制作效率高。所述侧面导线400的材料可以采用低熔点金属，例如In、Ag、Ga、Sn或者它们相互间的合金等。\n\n[0122]如图15至图19所示，所述侧面导线400可以与所述低温多晶硅薄膜晶体管200的源极或栅极、及氧化物薄膜晶体管300的源极或栅极连接。具体为：所述侧面导线400与所述低温多晶硅薄膜晶体管200的栅极、以及所述氧化物薄膜晶体管300的栅极连接；所述侧面导线400与所述低温多晶硅薄膜晶体管200的源极、以及所述氧化物薄膜晶体管300的源极连接；所述侧面导线400的一端与所述低温多晶硅薄膜晶体管200的栅极连接，其另一端与所述氧化物薄膜晶体管300的源极连接；或者，所述侧面导线400的一端与所述低温多晶硅薄膜晶体管200的源极连接，其另一端与所述氧化物薄膜晶体管300的栅极连接。例如，如图17和图19所示，所述侧面导线400的一端与所述第四源极3064连接，另一端与所述第二源极2074连接，图中在所述侧面导线400和所述第二源极2074之间设置的所述第二保护层2092、及所述侧面导线400和所述第四源极3064之间设置的所述第三保护层309是用于保护连接处防止氧化，其实际目的是使所述侧面导线400最终连接至所述低温多晶硅薄膜晶体管200的源极以及所述氧化物薄膜晶体管300的源极。如图16和图18所示，所述第四源极3064还与所述第四栅极3042连接，所述第二源极2074还与所述第二栅极2052连接，其实际目的是使所述侧面导线400最终连接至所述低温多晶硅薄膜晶体管200的栅极以及所述氧化物薄膜晶体管300的栅极。\n\n[0123]如图16至图19所示，所述显示基板还包括驱动芯片800和印刷电路板900。\n\n[0124]如图16至图19所示，所述驱动芯片800，连接至所述驱动电路层的至少一绑定焊盘；所述印刷电路板900，连接至所述驱动芯片800。具体地，如图16至图19所示，所述驱动芯片800可以通过薄膜覆晶(Chip on Film，COF)方式设置于柔性线路板700上，再通过所述柔性线路板700连接至所述驱动电路层的至少一绑定焊盘(如第一绑定焊盘2073)；所述印刷电路板900连接至所述柔性线路板700。所述驱动芯片800还可以通过玻璃覆晶(Chip onGlass，COG)方式直接绑定至所述驱动电路层的至少一绑定焊盘(如第一绑定焊盘2073)，并且连接(如通过异方性导电膜连接)至柔性线路板700；所述印刷电路板900连接至所述柔性线路板700。\n\n[0125]请参考图1至图19所示，本发明实施例还提供了一种上述显示基板的制备方法，其包括以下步骤：\n\n[0126]步骤A、如图1所示，提供一衬底基板100，所述衬底基板100具有相对的顶面与底面以及衔接所述顶面与底面的侧壁；图中A面表示衬底基板100的顶面，B面表示衬底基板100的底面。所述衬底基板100可以为玻璃基板。\n\n[0127]步骤B、在所述衬底基板的底面制备驱动电路层，所述驱动电路层包含多个电路单元，其中至少一个电路单元由低温多晶硅薄膜晶体管组成。所述电路单元包含栅极驱动电路(GOA)、解多工器电路(Demux)及扇出电路(fan-out)，皆形成于所述衬底基板100的底面。\n\n[0128]如图1至图7所示，所述低温多晶硅薄膜晶体管200的制备方法包括以下步骤：\n\n[0129]b1、如图1所示，在所述衬底基板100的底面形成遮光层201。具体地，是在所述衬底基板100的底面镀一金属膜层，图案化得到遮光层201。所述遮光层201的材料可以为Mo、Mo/Al/Mo叠层、Mo/Cu叠层、Mo/Cu/IZO叠层、IZO/Cu/IZO叠层、Mo/Cu/ITO叠层、Ni/Cu/Ni叠层、MoTiNi/Cu/MoTiNi叠层、NiCr/Cu/NiCr叠层或CuNb等。\n\n[0130]b2、如图2所示，形成第一缓冲绝缘层202，使其覆盖所述遮光层201及所述衬底基板100。具体地，是在所述遮光层201及所述衬底基板100的底面上镀一缓冲绝缘膜层，形成第一缓冲绝缘层202。所述第一缓冲绝缘层202的材料可以为SiOx、SiNx、SiNx/SiOx叠层或SiNOx等。\n\n[0131]b3、如图2所示，在所述第一缓冲绝缘层202上形成第一半导体层203。具体地，是在所述第一缓冲绝缘层202上镀一半导体膜层，图案化得到第一半导体层203。所述半导体材料为多晶硅，多晶硅可以通过非晶硅激光退火晶化或其他晶化方法获得。\n\n[0132]b4、如图3所示，在所述第一半导体层203和所述第一缓冲绝缘层202之上形成第一栅极绝缘层204。具体地，是在所述第一半导体层203和所述第一缓冲绝缘层202之上镀一绝缘膜层，形成第一栅极绝缘层204。所述第一栅极绝缘层204的材料可以为SiOx、SiNx、Al2O3/SiNx/SiOx叠层或SiOx/SiNx/SiOx叠层等。\n\n[0133]b5、如图3所示，在所述第一栅极绝缘层204之上形成第一金属膜层205，且使所述第一金属膜层205至少形成有第一栅极2051，以及对所述第一半导体层203进行掺杂处理。具体地，是在所述第一栅极绝缘层204上镀一金属膜层，形成第一金属膜层205，图案化处理得到第一栅极2051(参见图17和图19)、或者得到第一栅极2051与第二栅极2052(参见图3、图16和图18)。所述第二栅极2052用于与所述侧面导线400连接，其中所述第二栅极2052形成在所述衬底基板100的边缘处(包括边缘附近)、并且设置在靠近所述侧面导线400的一侧。所述掺杂处理是对所述第一半导体进行掺杂磷离子形成N型重掺，以最终形成nMOS晶体管；或者掺杂硼离子形成P型重掺，以最终形成pMOS晶体管。所述掺杂的区域为所述第一半导体上与所述第一源极2071和第一漏极2072对应连接的区域，并且所述掺杂可以是多次掺杂处理和/或多次图案化掺杂处理。所述第一金属膜层205的材料可以为Mo、Mo/Al叠层、Mo/Cu叠层、Mo/Cu/IZO叠层、IZO/Cu/IZO叠层、Mo/Cu/ITO叠层、Ni/Cu/Ni叠层、MoTiNi/Cu/MoTiNi叠层、NiCr/Cu/NiCr叠层或CuNb等。\n\n[0134]b6、如图4所示，形成第一介电层206，使其覆盖在所述第一金属膜层205及所述第一栅极绝缘层204之上；并对所述第一介电层206进行氢化及活化处理。具体地，是在所述第一金属膜层205及所述第一栅极绝缘层204之上镀一介电膜层，对其进行氢化及活化处理，图案化得到第一介电层206。还可以经过图案化处理形成第一通孔2061、第二通孔2062及第三通孔2063，其中所述第一通孔2061贯穿所述第一介电层206和所述第一栅极绝缘层204并通向至所述第一半导体层203；所述第二通孔2062贯穿所述第一介电层206和所述第一栅极绝缘层204、并且通向至所述第一半导体层203；所述第三通孔2063贯穿所述第一介电层206、所述第一栅极绝缘层204和所述第一缓冲绝缘层202并通向至所述遮光层201。所述第一介电层206的材料可以为SiOx、SiNx、SiNOx或SiOx/SiNx叠层等。所述氢化及活化处理的方法采用现有常规的方法即可。\n\n[0135]b7、如图5所示，在所述第一介电层206之上形成第二金属膜层207，且使所述第二金属膜层207至少形成有第一源极2071、第一漏极2072、第一绑定焊盘2073和第二源极2074。并使所述第一源极2071的一端与所述遮光层201连接、另一端与所述第一半导体层203连接；使所述第一漏极2072与所述第一半导体层203连接；使所述第二源极2074设置在所述衬底基板100边缘处(包括边缘附近)、且靠近所述侧面导线400的一侧，用于与所述侧面导线400连接。具体地，是在所述第一介电层206上镀一金属膜层，形成第二金属膜层207，图案化得到第一源极2071、第一漏极2072、第一绑定焊盘2073和第二源极2074；并使所述第一漏极2072通过所述第一通孔2061与所述第一半导体层203连接；所述第一源极2071的一端通过所述第三通孔2063与所述遮光层201连接，另一端通过所述第二通孔2062与所述第一半导体层203连接。所述第一绑定焊盘2073用于与其它元件连接。所述第二金属膜层207的材料可以为：Mo、Mo/Al叠层、Mo/Cu叠层、Mo/Cu/IZO叠层、IZO/Cu/IZO叠层、Mo/Cu/ITO叠层、Ni/Cu/Ni叠层、MoTiNi/Cu/MoTiNi叠层、NiCr/Cu/NiCr叠层或CuNb等。\n\n[0136]b8、如图6所示，形成第一钝化层208，使其覆盖在所述第二金属膜层207及所述第一介电层206之上。具体地，是在所述第二金属膜层207及所述第一介电层206之上镀一钝化膜层，形成第一钝化层208，并使其覆盖所述第一介电层206、第一源极2071、所述第一漏极2072、所述第一绑定焊盘2073和第二源极2074，还可以根据需求对钝化层进行图案化，如形成用于实现连接的孔等。所述第一钝化层208的材料可以为SiNx或SiOx等。\n\n[0137]b9、如图6所示，所述步骤B还可以包括在所述第一钝化层208之上形成第一保护膜层209，且至少形成有第一保护层2091和/或第二保护层2092。具体地，是在所述第一钝化层208之上镀一保护膜层，图案化得到第一保护层2091和/或第二保护层2092。所述第一保护层2091与所述第一绑定焊盘2073连接。所述第二保护层2092与所述第二源极2074连接。可以通过在所述第一钝化层208上图案化形成孔的方式实现连接。所述第一保护膜层209的材料可以为氧化铟锡(ITO)，用于抗氧化。\n\n[0138]b10、如图7所示，所述步骤B还可以在所述第一钝化层208及所述第一保护膜层209之上设置底面保护膜层1000，以在后续制程中保护低温多晶硅薄膜晶体管200，防止损伤等。所述底面保护膜层1000的材料可以为SiNx或SiOx等。\n\n[0139]如图8所示，制备完所述低温多晶硅薄膜晶体管200后，翻转所述衬底基板100，以在所述衬底基板100的顶面制备所述显示阵列层。\n\n[0140]如图16至图19所示，所述显示阵列层的每一所述像素单元还包括发光器件，设置于所述衬底基板100的顶面、且与所述氧化物薄膜晶体管300连接。所述步骤B中还包括b11、在所述衬底基板100的顶面制备发光器件(例如微发光二极管500或有机发光二极管600)，并使所述发光器件与所述氧化物薄膜晶体管300连接。例如，如图16和图17所示，可以在所述衬底基板100的顶面制备一微发光二极管500，使其与第一像素电极3081和第二像素电极3082连接。所述微发光二极管500可以通过绑定粘合材料501(如InAg等)连接至所述第一像素电极3081和所述第二像素电极3082。如图18和图19所示，还可以在所述衬底基板100的顶面制备一有机发光二极管600，使其与所述第三源极3062、公共阴极3065连接。所述发光器件(如微发光二极管500或有机发光二极管600)的制备方法采用现有方法即可，本发明不作具体限定。\n\n[0141]步骤C、在所述衬底基板100的顶面制备显示阵列层，所述显示阵列层包含多个阵列分布的像素单元，每一像素单元包含至少一氧化物薄膜晶体管300。\n\n[0142]如图9至图13所示，所述氧化物薄膜晶体管300可以为铟镓锌氧化物(IGZO)薄膜晶体管。所述氧化物薄膜晶体管300的制备方法包括如下步骤：\n\n[0143]c1、如图9所示，形成第二缓冲绝缘层301，使其覆盖在所述衬底基板100的顶面之上。具体地，是在所述衬底基板100的顶面镀一缓冲绝缘膜层，形成第二缓冲绝缘层301。所述第二缓冲绝缘层301的材料可以为SiOx、SiNx、SiNx/SiOx叠层或SiNOx等。\n\n[0144]c2、如图9所示，在所述第二缓冲绝缘层301之上形成第二半导体层302。具体地，是在所述第二缓冲绝缘层301之上镀一半导体膜层，图案化得到第二半导体层302。所述第二半导体层302的材料可以为氧化物半导体，如IGZO、IGTO、IGZO、IGO、IZO、AIZO或ATZO等。\n\n[0145]c3、如图10所示，形成栅极绝缘膜层303，使其形成在所述第二半导体层302及所述第二缓冲绝缘层301之上，且至少形成有位于所述第二半导体层302之上的第二栅极绝缘层3031。具体地，是在所述第二半导体层302及所述第二缓冲绝缘层301之上镀一绝缘膜层，形成所述栅极绝缘膜层303，图案化得到第二栅极绝缘层3031(参见图17和图19)、或者得到第二栅极绝缘层3031与第三栅极绝缘层3032(参见图10)。所述栅极绝缘膜层303的材料可以为SiOx、SiNx、Al2O3/SiNx/SiOx叠层或SiOx/SiNx/SiOx叠层等。\n\n[0146]c4、如图10所示，在所述栅极绝缘膜层303之上形成第三金属膜层304，且至少形成有位于所述第二栅极绝缘层3031之上的第三栅极3041。具体地，是在所述栅极绝缘膜层303之上镀一金属膜层，形成第三金属膜层304，图案化得到第三栅极3041(参见图17和图19)、或者得到第三栅极3041及第四栅极3042(参见图10)。所述第三金属膜层304的材料可以为Mo、Mo/Al叠层、Mo/Cu叠层、Mo/Cu/IZO叠层、IZO/Cu/IZO叠层、Mo/Cu/ITO叠层、Ni/Cu/Ni叠层、MoTiNi/Cu/MoTiNi叠层、NiCr/Cu/NiCr叠层或CuNb等。\n\n[0147]c5、如图11所示，形成第二介电层305，使其覆盖在所述第二缓冲绝缘层301、所述第二半导体层302、所述栅极绝缘膜层303及第三金属膜层304之上。具体地，镀一介电膜层，形成第二介电层305，对所述第二介电层305图案化形成第四通孔3051和第五通孔3052，使所述第四通孔3051和第五通孔3052均通向所述第二半导体层302。所述第二介电层305的材料可以为SiOx，SiNx或SiNOx等。\n\n[0148]c6、如图12所示，在所述第二介电层305之上形成第四金属膜层306，且使所述第四金属膜层306至少形成有第三源极3062、第二漏极3061、第二绑定焊盘3063或公共阴极3065、及第四源极3064；其中使所述漏极与所述第二半导体层302连接；使所述第三源极3062与所述第二半导体层302连接；使所述第四源极3064设置在所述衬底基板100边缘处(包括边缘附近)、且靠近所述侧面导线400的一侧，并使所述第四源极3064与所述侧面导线400连接。具体地，是在第二介电层305之上镀一金属膜层，得到第四金属膜层306，图案化得到第三源极3062、第二漏极3061、第二绑定焊盘3063或公共阴极3065、及第四源极3064；使所述漏极通过所述第四通孔3051与所述第二半导体层302连接；使所述第三源极3062通过所述第五通孔3052与所述第二半导体层302连接；所述第四源极3064用于与所述侧面导线400连接；所述第二绑定焊盘3063或所述公共阴极3065用于与其它元件连接。所述第四金属膜层306的材料可以为Mo、Mo/Al叠层、Mo/Cu叠层、Mo/Cu/IZO叠层、IZO/Cu/IZO叠层、Mo/Cu/ITO叠层、Ni/Cu/Ni叠层、MoTiNi/Cu/MoTiNi叠层、NiCr/Cu/NiCr叠层、CuNb等。\n\n[0149]c7、如图12所示，形成第二钝化层307，使其覆盖在所述第四金属膜层306及所述第二介电层305之上。具体地，是在所述第四金属膜层306及所述第二介电层305之上镀一钝化膜层，形成第二钝化层307，并可以根据需求进行图案化，如形成孔等。所述第二钝化层307的材料可以为SiOx、SiOx/SiNx叠层或Al2O3/SiOx叠层等。\n\n[0150]c8、如图13所示，所述步骤B还包括在所述第二钝化层307之上形成像素电极层308，且形成有第一像素电极3081和第二像素电极3082。所述第一像素电极3081与所述第二绑定焊盘3063连接；所述第二像素电极3082与所述第三源极3062连接。具体地，是在所述第二钝化层307上镀一像素电极膜层，得到像素电极层308，图案化得到第一像素电极3081和第二像素电极3082，所述第一像素电极3081与所述第二绑定焊盘3063连接、以及所述第二像素电极3082与所述第三源极3062连接。所述连接可以通过图案化形成孔的方式实现。所述像素电极层308的材料可以为IZO，ITO或AZO等。\n\n[0151]c9、如图13所示，所述步骤B还包括在所述第二钝化层307之上形成第三保护层309，所述第三保护层309形成在所述第二钝化层307之上，并使所述第三保护层309与所述第四源极3064连接。具体地，所述第三保护层309形成在所述衬底基板100边缘处(包括边缘附近)，且靠近所述侧面导线400的一侧。所述第三保护层309的材料可以为氧化铟锡，用于抗氧化。\n\n[0152]c10、如图14所示，去除所述衬底基板100底部的所述底面保护膜层1000。\n\n[0153]步骤D、如图15所示，在所述衬底基板100的侧壁制备侧面导线400，使所述驱动电路层的电路单元通过所述侧面导线400电连接所述显示阵列层。具体地，通过金属化方法(例如印刷金属走线或其他金属化方法)在所述衬底基板100的侧壁所在面形成侧面导线400，并且使所述侧面导线400的一端延伸至所述低温多晶硅薄膜晶体管200的表面与所述低温多晶硅薄膜晶体管200连接、其另一端延伸至所述氧化物薄膜晶体管300的表面与所述氧化物薄膜晶体管300连接。所述侧面导线400的材料可以采用低熔点金属，例如In、Ag、Ga、Sn或者它们相互间的合金等。制备侧面导线400的方法简单，所制备的侧面导线400牢固，可靠性高，精度高，制作效率高。如图15所示，在所述侧面导线400在显示基板的加工过程中还可以覆盖一层侧面导线保护膜层1100，以防止加工过程中受到损伤。\n\n[0154]如图15所示，所述侧面导线400可以与所述低温多晶硅薄膜晶体管200的源极或栅极、以及氧化物薄膜晶体管300的源极或栅极连接。例如，如图17和图19所示，所述侧面导线400的一端与所述第四源极3064连接，另一端与所述第二源极2074连接，图中在所述侧面导线400和所述第二源极2074之间设置的所述第二保护层2092、以及所述侧面导线400和所述第四源极3064之间设置的所述第三保护层309是用于保护连接处防止氧化，其实际目的是使所述侧面导线400最终连接至所述低温多晶硅薄膜晶体管200的源极以及所述氧化物薄膜晶体管300的源极。如图16和图18所示，所述第四源极3064还与所述第四栅极3042连接，所述第二源极2074还与所述第二栅极2052连接，实际最终目的是使所述侧面导线400最终连接至所述低温多晶硅薄膜晶体管200的栅极以及所述氧化物薄膜晶体管300的栅极。\n\n[0155]如图16至图19所示，所述显示基板的制备方法还包括步骤E、将驱动芯片800连接至所述驱动电路层的至少一绑定焊盘。以及步骤F、将印刷电路板900连接至所述驱动芯片800。如图16至图19所示，所述驱动芯片800可以通过薄膜覆晶(Chip on Film，COF)方式设置于柔性线路板700上，再通过所述柔性线路板700连接至所述驱动电路层的至少一绑定焊盘(如第一绑定焊盘2073)；所述印刷电路板900连接至所述柔性线路板700。具体地，所述驱动芯片800通过所述柔性线路板700连接至所述驱动电路层的低温多晶硅薄膜晶体管200的第一绑定焊盘2073。所述驱动芯片800还可以通过玻璃覆晶(Chip on Glass，COG)方式直接绑定至所述驱动电路层的至少一绑定焊盘(如第一绑定焊盘2073)，并且连接(如通过异方性导电膜连接)至柔性线路板700；所述印刷电路板900连接至所述柔性线路板700。\n\n[0156]本实施例将显示阵列层形成于衬底基板100的顶面，而将驱动电路层形成于衬底基板100的底面，再通过侧面导线400连接，由于栅极驱动电路、解多工器电路及扇出电路等电路单元皆制作于衬底基板100的底面的关系，显示阵列层在衬底基板100的顶面上所能提供的显示区域可以最大地延伸到衬底基板100的边缘，故本实施例提供的方案有利于制作高解析度无边框显示基板。此外，驱动电路层采用低温多晶硅薄膜晶体管200，显示阵列层采用氧化物薄膜晶体管300，可以利用氧化物薄膜晶体管300的低漏电流及低温多晶硅薄膜晶体管200的高电流通过能力，降低显示的功耗。在制程上，先在所述衬底基板100的底面制备低温多晶硅薄膜晶体管200用于形成驱动电路，再在所述衬底基板100的顶面制备氧化物薄膜晶体管300用于显示，可以避免将氧化物薄膜晶体管300用于制作衬底基板100底面的驱动电路时受衬底基板100顶面的薄膜晶体管制作的热影响而失效。\n\n[0157]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0158]以上对本发明实施例进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10888, 23942, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种阵列基板及转移方法。\n\n背景技术\n\n[0002]Micro LED显示器相比OLED显示器具有可靠性高、色域高、亮度高、透明度高以及PPI高等优点。此外，Micro LED显示器的封装要求低，也更容易实现柔性及无缝拼接显示。因此，Micro LED显示器是未来极具有发展潜力的未来显示器率。\n\n[0003]图1为现有转移方法的工艺流程图。如图1所示，现有转移技术中，Micro LED阵列器件20与阵列基板10的ACF(Anisotropic Conductive Film)胶层11接触面积大，使得Micro LED21选择性转移后不易分离，还容易造成ACF胶层11破孔或撕裂不良，影响转移良率或转移速率。此外，上述ACF bonding技术还存在无法进行Micro LED21的修补的问题。\n\n[0004]因此，亟需提供一种阵列基板及转移方法，以解决上述技术问题。\n\n发明内容\n\n[0005]为了解决上述问题，本发明提供一种阵列基板及转移方法，所述阵列基板通过设置所述键合凸起，能避免无需转移的微型器件与阵列基板的接触，进而能解决ACF bonding面临的ACF容易出现孔或撕以及无法进行Micro LED的修补的问题。\n\n[0006]为了实现上述目的，本发明所述阵列基板及转移方法采取了以下技术方案。\n\n[0007]本发明提供一种阵列基板，所述阵列基板设置有多个键合凸起，每一所述键合凸起被配置为至少用于将一微型器件固持于其表面上，以使被固持的所述微型器件电性连接于所述阵列基板。\n\n[0008]进一步，所述阵列基板包括一衬底基板和设置于所述衬底基板上的一键合电极层；每一所述键合凸起对应并设置于一键合电极上。\n\n[0009]进一步，每一所述键合凸起包括一导电焊接层和一绝缘黏胶层，其中：所述导电焊接层设置于所述键合电极上并被配置为用于将所述微型器件的电极焊接于所述键合电极；所述绝缘黏胶层至少包覆位于所述键合电极上的所述导电焊接层的外表面的部分区域，并且所述绝缘黏胶层被配置为用于将所述微型器件黏附于所述键合凸起上。\n\n[0010]进一步，所述绝缘黏胶层仅覆盖所述导电焊接层的背离所述键合电极层的表面。\n\n[0011]进一步，相邻所述键合凸起的绝缘黏胶层相互连续以构成一绝缘黏胶层；所述绝缘黏胶层覆盖所述导电焊接层、所述键合电极层以及所述衬底基板。\n\n[0012]进一步，所述导电焊接层具有的环境熔融温度低于所述键合电极的环境熔融温度；所述绝缘黏胶层具有的环境熔融温度低于所述导电焊接层的环境熔融温度。\n\n[0013]进一步，所述导电焊接层的材料为铟、锡、铋、银或金中的至少一种。\n\n[0014]进一步，所述绝缘黏胶层为环氧胶、聚酰亚胺胶、丙烯酸胶或硅胶中的至少一种。\n\n[0015]进一步，所述键合凸起具有一预设高度；所述预设高度使得所述阵列基板仅通过所述键合凸起与所述微型器件接触。\n\n[0016]本发明还提供一种基于所述阵列基板的转移方法，所述转移方法包括以下步骤：对位步骤：将承载有微型器件的微型器件阵列与所述阵列基板进行对位，使所述阵列基板上的所述键合凸起对准待转移微型器件；转移步骤：将所述待转移微型器件由所述微型器件阵列剥离至所述阵列基板上，所述键合凸起将被剥离的所述微型器件固持于其表面；以及，接合步骤：通过所述键合凸起使得被固持的所述微型器件电性连接于述阵列基板。\n\n[0017]本发明所述阵列基板及转移方法的有益效果在于：\n\n[0018]本发明所述阵列基板通过设置键合凸起，能实现对微型器件的选择性转移，解决现有技术ACF bonding中存在的ACF容易破孔或撕裂的问题以及无法进行微型器件的修补的问题，进而能提高转移良率和转移速率；通过配置所述键合凸起的预设高度，使所述阵列基板仅通过所述键合凸起与微型器件接触，以避免无需转移的微型器件与所述阵列基板接触；通过将所述键合凸起配置为具有导电焊接层和绝缘黏胶层的复合结构，能将微型器件固持于对应的所述键合凸起上，以使得微型器件和键合电极的电性连接。\n\n[0019]本发明所述转移方法通过采用本发明所述阵列基板能使得该阵列基板仅通过键合凸起与微型器件接触，以避免无需转移的微型器件能避免与阵列基板的接触，从而能实现对键合凸起选择性转移；在所述转移步骤中，能利用键合凸起对键合凸起进行固持，还能利用键合凸起实现键合凸起和键合电极的电性连接。\n\n附图说明\n\n[0020]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0021]图1为现有转移方法的工艺流程图。\n\n[0022]图2为本发明所述阵列基板的第一实施例的结构示意图。\n\n[0023]图3为本发明所述阵列基板的第二实施例的结构示意图。\n\n[0024]图4为本发明所述阵列基板的第三实施例的结构示意图。\n\n[0025]图5A-图5C为本发明所述转移方法的工艺流程图。\n\n具体实施方式\n\n[0026]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0027]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0028]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电性连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0029]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0030]下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0031]图2为本发明所述阵列基板的第一实施例的结构示意图。如图2所示，本发明提供一种阵列基板100，所述阵列基板100设置有多个键合凸起200，每一所述键合凸起200被配置为至少用于将一微型器件300固持于其表面上，以使被固持的所述微型器件300电性连接于所述阵列基板100。\n\n[0032]具体地，所述阵列基板100可以仅通过所述键合凸起200与所述微型器件200接触，同时也可以仅通过所述键合凸起200固持所述微型器件300，更加可以通过所述键合凸起200实现与被固持的所述微型器件300的电性连接。\n\n[0033]本发明所述阵列基板100通过配置突出于其表面的键合凸起200，能实现对微型器件200的选择性转移以及微型器件200与所述阵列基板100的电性连接；\n\n[0034]很显然地，本发明所述阵列基板100可以仅通过键合凸起200与微型器件200接触，因而能防止晶圆或微型器件阵列与所述阵列基板100接触面积过大造成的微型器件300选择性转移后不易分离，导致的ACF容易出现破孔或撕裂等不良的问题，以及无法对微型器件300进行修补，最终能提高转移良率或转移速率。\n\n[0035]具体地，所述键合凸起200被配置为一预设高度，所述预设高度使得所述阵列基板100仅通过所述键合凸起200与所述微型器件300接触。或者说，所述预设高度使得所述键合凸起200在垂直所述阵列基板100的方向具有一突出于所述阵列基板100的表面的凸起距离，所述凸起距离大于所述阵列基板100和承载有所述待转移微型器件200的承载基板300的翘曲高度之和\n\n[0036]也就是说，该所述键合凸起200的预设高度使得所述阵列基板100仅通过键合凸起200与微型器件300接触，进而能防止一微型器件阵列上的无需转移或无需剥离的微型器件300与阵列基板100接触。\n\n[0037]在具体实施时，所述微型器件300可以为微型发光二级管(Micro LED)。但应当理解：本发明的所述微型器件300并不受限于微型发光二极管(Micro LED)，并且某些实施例也可适用于其他微型半导体器件，这种微型半导体器件以这种方式被设计以便以受控方式执行预定电子功能(例如，二极管、晶体管、集成电路)或光子功能(LED、激光器)。\n\n[0038]如图2所示，所述阵列基板100包括一衬底基板110以及设置于所述衬底基板110上的键合电极层120。\n\n[0039]如图2所示，所述衬底基板110包括一基底111以及设置于所述基底111上的薄膜晶体管112和公共电极113。\n\n[0040]其中，所述基底111的材料可以包括聚酰亚胺、聚硅氧烷、环氧类树脂、丙烯酸类树脂、聚酯和/或类似材料。在一个实施例中，所述基底111可以包括聚酰亚胺。\n\n[0041]如图2所示，所述薄膜晶体管112包括有源层1121、栅极绝缘层1122、栅极1123、第一绝缘层1124、漏极1125、源极1126和第二绝缘层1127。\n\n[0042]如图2所示，所述有源层1121设于所述基底111上。在具体实施时，所述有源层可1121可以包括诸如多晶硅的硅化合物。在一些实施例中，包括p型或n型杂质的源区和漏区可以形成在所述有源层可1121的两端。在一些实施例中，所述有源层1121可包括氧化物半导体，诸如氧化铟镓锌(IGZO)、氧化锌锡(ZTO)、氧化铟锡锌(ITZO)和/或类似材料。\n\n[0043]具体地，所述有源层1121包括沟道区和位于所述沟道区外围的源区和漏区。其中，沟道区可以用作电荷可以经其移动或传输的沟道，源区和漏区分别用于源极和漏极电性连接或接触。\n\n[0044]如图2所示，所述栅极绝缘层1122形成在所述有源层1121上并覆盖所述沟道区。在具体实施时，栅极绝缘层1122以包括氧化硅、氮化硅、氮氧化硅和/或类似材料。这些可以单独使用或以其组合使用。\n\n[0045]如图2所示，所述栅极1123设置在栅极绝缘层1122上。具体地，所述栅极1123层叠于所述栅极绝缘层1122的对应所述沟道区的区域内。\n\n[0046]图2示出了薄膜晶体管112具有其中栅极1123位于有源层1121上方的顶栅结构。然而，薄膜晶体管112可以具有其中栅极1123被设置在有源层1121下方的底栅结构。\n\n[0047]如图2所示，所述第一绝缘层1124设置于所述栅极132上并覆盖所述栅极1123、栅极绝缘层1122和所述有源层1121；并且，所述第一绝缘层1124在对应所述源区和所述漏区分别处设置有第一过孔。\n\n[0048]如图2所示，所述漏极1125和所述源极1126设置于所述第一绝缘层1124上，并分别通过所述第一过孔分别与所述源区和所述漏区电性连接或接触。\n\n[0049]在具体实施时，所述栅极1123、所述漏极1125和所述源极1126可包括金属、合金或金属氮化物。例如，栅极1123可包括诸如铝(Al)、银(Ag)、钨(W)、铜(Cu)、镍(Ni)、铬(Cr)、钼(Mo)、钛(Ti)、铂(Pt)、钽(Ta)和钕(Nd)的金属、其合金和/或其氮化物。这些可以单独使用或以其组合使用。\n\n[0050]请继续参考图2，所述第二绝缘层1127设置于所述漏极1125和所述源极1126上并覆盖所述漏极1125和所述源极1126和所述第一绝缘层1124。\n\n[0051]在具体实施时，所述第二绝缘层1127可以包括有机材料，例如聚酰亚胺、环氧类树脂、丙烯酸类树脂、聚酯和/或类似材料。\n\n[0052]如图2所示，所述公共电极113与所述薄膜晶体管层120的所述漏极1125和所述源极1126同层设置。例如，在本实施例中，所述公共电极113设置于所述第一绝缘层1124上，并被所述第二绝缘层1127所覆盖。\n\n[0053]如图2所示，所述键合电极层120设置于所述衬底基板110上，所述键合电极层120包括复数个键合电极121。\n\n[0054]例如，如图2所示，在本实施例中，所述键合电极层120设置于所述第二绝缘层1127上，所述键合电极121通过设置于所述第二绝缘层1127上的过孔电性连接于所述薄膜晶体管层121的所述漏极1125和所述源极1126，或者，所述公共电极113。\n\n[0055]具体地，所述键合电极121包括电性连接于所述漏极1125或所述源极1126的第一键合电极141，以及，电性连接于所述公共电极的第二键合电极142。\n\n[0056]例如，如图2所示，在本实施例中，所述键合电极121可以为像素电极。\n\n[0057]如图2所示，所述键合凸起200设置于所述键合电极层120上，每一所述键合凸起200对应设置于一所述键合电极121上。\n\n[0058]详细地说，每一所述键合凸起200以所述键合电极121背离所述衬底基板110的表面为起点并朝向背离所述衬底基板110的方向延伸以突出于所述阵列基板100的表面。\n\n[0059]需要指出的是，本发明并未限定所述键合凸起200与所述键合电极121的对应关系。例如，在本实施例中，每一所述键合电极121对应一所述键合凸起200，在其他实施例中，每一所述键合电极121可以对应设置复数个所述键合凸起200。只要对所述键合凸起200的截面尺寸或形状合理配置，能用于微型器件转移过程即可。\n\n[0060]如图2所示，所述键合凸起200包括一导电焊接层210和一绝缘黏胶层220。\n\n[0061]如图2所示，所述导电焊接层210设置于一所述键合电极121并被配置为用于将微型器件300的电极焊接于所述键合电极121上，从而实现所述微型器件300和所述阵列基板100的电性连接。\n\n[0062]具体地，所述导电焊接层210具有的环境熔融温度低于所述键合电极121的环境熔融温度。在具体实施时，所述导电焊接层210的材料为铟、锡、铋、银或金中的至少一种。例如，所述导电焊接层210的材料为In、Sn、AuSn、SnBi、SnAgBi或Au/In中的至少一种。\n\n[0063]在将一微型器件300绑定于所述阵列基板100上时，可以通过对所述键合凸起200的处理使所述导电焊接层210暴露并熔化，以将微型器件300的电极与键合电极121焊接，从而能实现微型器件300和阵列基板100的电性连接。\n\n[0064]其中，“对所述键合凸起150的处理”可以为热压工艺，也可以为其他常见工艺处理方法。本发明并未对所述工艺处理的具体实施方法进行限定。\n\n[0065]需要指出的是，本发明并未限定所述导电焊接层210的膜层结构或形状。例如，在本实施例中，所述导电焊接层210为单层结构。在其他实施例中，所述导电焊接层210可以为多层层叠结构。\n\n[0066]如图2所示，所述绝缘黏胶层220至少包覆位于所述键合电极121上的所述导电焊接层210的外表面的部分区域，并且所述绝缘黏胶层220被配置为用于将所述微型器件300黏附于所述键合凸起200上。\n\n[0067]在微型器件300转移的过程中，所述绝缘黏胶层220能对与其接触的微型器件300黏附于其表面上，从而能将一微型器件300固持于其所属键合凸起200的表面上。\n\n[0068]在具体实施时，所述绝缘黏胶层220可以为针对一个单独设置，也可以为针对多个所述键合凸起200共同设置。\n\n[0069]例如，如图2所示，在本实施例中，所述绝缘黏胶层220为针对多个键合凸起200共同的设置，从而所述绝缘黏胶层220实质上构成一覆盖于所述导电焊接层210、所述键合电极层120以及所述第二绝缘层1127的黏胶绝缘层230。该黏胶绝缘层230同时可以作为所述阵列基板100一外表面。\n\n[0070]或者说，相邻所述键合凸起200的绝缘黏胶层220相互连续以构成一黏胶绝缘层230，所述黏胶绝缘层230覆盖所述导电焊接层210、所述键合电极层110以及所述衬底基板110。\n\n[0071]在其他实施例中，所述绝缘黏胶层220为针对一个键合凸起200单独设置。在该种情况下，本发明并未限定所述绝缘黏胶层220覆盖于所述导电焊接层210的外表面的具体区域位置或面积大小。\n\n[0072]具体地，所述绝缘黏胶层220具有的环境熔融温度低于所述导电焊接层220具有的环境熔融温度。在具体实施时，所述绝缘黏胶层220为有机绝缘胶。例如，所述绝缘黏胶层220为环氧胶类、聚酰亚胺胶类、丙烯酸胶类或硅胶类中的至少一种。\n\n[0073]需要指出的是，本发明并未限定所述键合凸起200的具体结构，图2仅为本发明所述键合凸起200的示意性结构。例如，在其他实施例中，所述键合凸起200还可以采用由具有粘合性的键合材料直接一体形成或分层层叠构成。\n\n[0074]图3为本发明所述阵列基板的第二实施例的结构示意图。与图2所示的阵列基板相比，本实施例所述阵列基板100的键合凸起200的结构不同。\n\n[0075]如图3所示，在本实施例中，所述绝缘黏胶层220仅覆盖所述导电焊接层210背离所述键合电极121的表面。\n\n[0076]图4为本发明所述阵列基板的第三实施例的结构示意图。与图2所示的阵列基板相比，本实施例所述阵列基板100的键合凸起200的结构不同。\n\n[0077]如图4所示，在本实施例中，所述绝缘黏胶层220覆盖所述导电焊接层210背离所述键合电极121的表面以及所述导电焊接层210在其厚度方向的外侧面的部分区域。\n\n[0078]需要指出的是，图2、图3及图4中的仅为所述绝缘黏胶层220的示意性结构。在具体实施时，可以根据键合凸起200或微型器件300的具体需求，对所述绝缘黏胶层220的覆盖位置或覆盖区域进行变更。\n\n[0079]图5A-图5C为本发明所述转移方法的工艺流程图。如图5A-图5C所示，本发明提供一种转移方法，所述转移方法包括以下步骤：\n\n[0080]S1、对位步骤：将承载有微型器件的微型器件阵列与所述阵列基板进行对位，使所述阵列基板上的所述键合凸起对准待转移微型器件；\n\n[0081]S2、转移步骤：将所述待转移微型器件由所述微型器件阵列剥离至所述阵列基板上，所述键合凸起将被剥离的所述微型器件固持于其表面；以及，\n\n[0082]S3、接合步骤：通过所述键合凸起使得被固持的所述微型器件电性连接于述阵列基板。\n\n[0083]如图5A所示，通过所述步骤S1，使所述阵列基板100上的所述键合凸起200对准并接触待转移微型器件300，从而能避免位于所述微型器件阵列上的无需转移的微型器件300与所述阵列基板100接触。\n\n[0084]如图5B所示，通过所述步骤S2剥离过程，使待转移微型器件300与所述微型器件阵列的承载基板400分离并被保持于所述键合凸起200的表面上。\n\n[0085]在具体实施时，所述剥离过程能采用镭射剥离(laser lift-Off)、化学蚀刻(chemical)或热应力剥离(thermal stress)。在本实施例中，所述剥离过程采用激光剥离。\n\n[0086]如图5C所示，在所述步骤S3中，将所述键合凸起200的导电焊接层210和绝缘黏胶层220熔化并冷却固化，将所述微型器件的电极焊接于所述键合电极121上。在具体实施时，上述焊接过程能采用热压工艺实现。\n\n[0087]例如，如图5C所示，在本实施例中，利用bonding头500加热使绝缘黏胶层220熔化掉并暴露出导电焊接层210；然后，bonding头500继续加热使导电焊接层210熔化，与此同时，利用bonding头500的压力下使熔化后的所述导电焊接层210将微型器件300的电极焊接于所述键合电极121上。\n\n[0088]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0089]以上对本发明实施例所提供的一种阵列基板及转移方法进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种阵列基板及转移方法。\n\n背景技术\n\n[0002]Micro LED显示器相比OLED显示器具有可靠性高、色域高、亮度高、透明度高以及PPI高等优点。此外，Micro LED显示器的封装要求低，也更容易实现柔性及无缝拼接显示。因此，Micro LED显示器是未来极具有发展潜力的未来显示器率。\n\n[0003]图1为现有转移方法的工艺流程图。如图1所示，现有转移技术中，Micro LED阵列器件20与阵列基板10的ACF(Anisotropic Conductive Film)胶层11接触面积大，使得Micro LED21选择性转移后不易分离，还容易造成ACF胶层11破孔或撕裂不良，影响转移良率或转移速率。此外，上述ACF bonding技术还存在无法进行Micro LED21的修补的问题。\n\n[0004]因此，亟需提供一种阵列基板及转移方法，以解决上述技术问题。\n\n发明内容\n\n[0005]为了解决上述问题，本发明提供一种阵列基板及转移方法，所述阵列基板通过设置所述键合凸起，能避免无需转移的微型器件与阵列基板的接触，进而能解决ACF bonding面临的ACF容易出现孔或撕以及无法进行Micro LED的修补的问题。\n\n[0006]为了实现上述目的，本发明所述阵列基板及转移方法采取了以下技术方案。\n\n[0007]本发明提供一种阵列基板，所述阵列基板设置有多个键合凸起，每一所述键合凸起被配置为至少用于将一微型器件固持于其表面上，以使被固持的所述微型器件电性连接于所述阵列基板。\n\n[0008]进一步，所述阵列基板包括一衬底基板和设置于所述衬底基板上的一键合电极层；每一所述键合凸起对应并设置于一键合电极上。\n\n[0009]进一步，每一所述键合凸起包括一导电焊接层和一绝缘黏胶层，其中：所述导电焊接层设置于所述键合电极上并被配置为用于将所述微型器件的电极焊接于所述键合电极；所述绝缘黏胶层至少包覆位于所述键合电极上的所述导电焊接层的外表面的部分区域，并且所述绝缘黏胶层被配置为用于将所述微型器件黏附于所述键合凸起上。\n\n[0010]进一步，所述绝缘黏胶层仅覆盖所述导电焊接层的背离所述键合电极层的表面。\n\n[0011]进一步，相邻所述键合凸起的绝缘黏胶层相互连续以构成一绝缘黏胶层；所述绝缘黏胶层覆盖所述导电焊接层、所述键合电极层以及所述衬底基板。\n\n[0012]进一步，所述导电焊接层具有的环境熔融温度低于所述键合电极的环境熔融温度；所述绝缘黏胶层具有的环境熔融温度低于所述导电焊接层的环境熔融温度。\n\n[0013]进一步，所述导电焊接层的材料为铟、锡、铋、银或金中的至少一种。\n\n[0014]进一步，所述绝缘黏胶层为环氧胶、聚酰亚胺胶、丙烯酸胶或硅胶中的至少一种。\n\n[0015]进一步，所述键合凸起具有一预设高度；所述预设高度使得所述阵列基板仅通过所述键合凸起与所述微型器件接触。\n\n[0016]本发明还提供一种基于所述阵列基板的转移方法，所述转移方法包括以下步骤：对位步骤：将承载有微型器件的微型器件阵列与所述阵列基板进行对位，使所述阵列基板上的所述键合凸起对准待转移微型器件；转移步骤：将所述待转移微型器件由所述微型器件阵列剥离至所述阵列基板上，所述键合凸起将被剥离的所述微型器件固持于其表面；以及，接合步骤：通过所述键合凸起使得被固持的所述微型器件电性连接于述阵列基板。\n\n[0017]本发明所述阵列基板及转移方法的有益效果在于：\n\n[0018]本发明所述阵列基板通过设置键合凸起，能实现对微型器件的选择性转移，解决现有技术ACF bonding中存在的ACF容易破孔或撕裂的问题以及无法进行微型器件的修补的问题，进而能提高转移良率和转移速率；通过配置所述键合凸起的预设高度，使所述阵列基板仅通过所述键合凸起与微型器件接触，以避免无需转移的微型器件与所述阵列基板接触；通过将所述键合凸起配置为具有导电焊接层和绝缘黏胶层的复合结构，能将微型器件固持于对应的所述键合凸起上，以使得微型器件和键合电极的电性连接。\n\n[0019]本发明所述转移方法通过采用本发明所述阵列基板能使得该阵列基板仅通过键合凸起与微型器件接触，以避免无需转移的微型器件能避免与阵列基板的接触，从而能实现对键合凸起选择性转移；在所述转移步骤中，能利用键合凸起对键合凸起进行固持，还能利用键合凸起实现键合凸起和键合电极的电性连接。\n\n附图说明\n\n[0020]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0021]图1为现有转移方法的工艺流程图。\n\n[0022]图2为本发明所述阵列基板的第一实施例的结构示意图。\n\n[0023]图3为本发明所述阵列基板的第二实施例的结构示意图。\n\n[0024]图4为本发明所述阵列基板的第三实施例的结构示意图。\n\n[0025]图5A-图5C为本发明所述转移方法的工艺流程图。\n\n具体实施方式\n\n[0026]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0027]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0028]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电性连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0029]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0030]下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0031]图2为本发明所述阵列基板的第一实施例的结构示意图。如图2所示，本发明提供一种阵列基板100，所述阵列基板100设置有多个键合凸起200，每一所述键合凸起200被配置为至少用于将一微型器件300固持于其表面上，以使被固持的所述微型器件300电性连接于所述阵列基板100。\n\n[0032]具体地，所述阵列基板100可以仅通过所述键合凸起200与所述微型器件200接触，同时也可以仅通过所述键合凸起200固持所述微型器件300，更加可以通过所述键合凸起200实现与被固持的所述微型器件300的电性连接。\n\n[0033]本发明所述阵列基板100通过配置突出于其表面的键合凸起200，能实现对微型器件200的选择性转移以及微型器件200与所述阵列基板100的电性连接；\n\n[0034]很显然地，本发明所述阵列基板100可以仅通过键合凸起200与微型器件200接触，因而能防止晶圆或微型器件阵列与所述阵列基板100接触面积过大造成的微型器件300选择性转移后不易分离，导致的ACF容易出现破孔或撕裂等不良的问题，以及无法对微型器件300进行修补，最终能提高转移良率或转移速率。\n\n[0035]具体地，所述键合凸起200被配置为一预设高度，所述预设高度使得所述阵列基板100仅通过所述键合凸起200与所述微型器件300接触。或者说，所述预设高度使得所述键合凸起200在垂直所述阵列基板100的方向具有一突出于所述阵列基板100的表面的凸起距离，所述凸起距离大于所述阵列基板100和承载有所述待转移微型器件200的承载基板300的翘曲高度之和\n\n[0036]也就是说，该所述键合凸起200的预设高度使得所述阵列基板100仅通过键合凸起200与微型器件300接触，进而能防止一微型器件阵列上的无需转移或无需剥离的微型器件300与阵列基板100接触。\n\n[0037]在具体实施时，所述微型器件300可以为微型发光二级管(Micro LED)。但应当理解：本发明的所述微型器件300并不受限于微型发光二极管(Micro LED)，并且某些实施例也可适用于其他微型半导体器件，这种微型半导体器件以这种方式被设计以便以受控方式执行预定电子功能(例如，二极管、晶体管、集成电路)或光子功能(LED、激光器)。\n\n[0038]如图2所示，所述阵列基板100包括一衬底基板110以及设置于所述衬底基板110上的键合电极层120。\n\n[0039]如图2所示，所述衬底基板110包括一基底111以及设置于所述基底111上的薄膜晶体管112和公共电极113。\n\n[0040]其中，所述基底111的材料可以包括聚酰亚胺、聚硅氧烷、环氧类树脂、丙烯酸类树脂、聚酯和/或类似材料。在一个实施例中，所述基底111可以包括聚酰亚胺。\n\n[0041]如图2所示，所述薄膜晶体管112包括有源层1121、栅极绝缘层1122、栅极1123、第一绝缘层1124、漏极1125、源极1126和第二绝缘层1127。\n\n[0042]如图2所示，所述有源层1121设于所述基底111上。在具体实施时，所述有源层可1121可以包括诸如多晶硅的硅化合物。在一些实施例中，包括p型或n型杂质的源区和漏区可以形成在所述有源层可1121的两端。在一些实施例中，所述有源层1121可包括氧化物半导体，诸如氧化铟镓锌(IGZO)、氧化锌锡(ZTO)、氧化铟锡锌(ITZO)和/或类似材料。\n\n[0043]具体地，所述有源层1121包括沟道区和位于所述沟道区外围的源区和漏区。其中，沟道区可以用作电荷可以经其移动或传输的沟道，源区和漏区分别用于源极和漏极电性连接或接触。\n\n[0044]如图2所示，所述栅极绝缘层1122形成在所述有源层1121上并覆盖所述沟道区。在具体实施时，栅极绝缘层1122以包括氧化硅、氮化硅、氮氧化硅和/或类似材料。这些可以单独使用或以其组合使用。\n\n[0045]如图2所示，所述栅极1123设置在栅极绝缘层1122上。具体地，所述栅极1123层叠于所述栅极绝缘层1122的对应所述沟道区的区域内。\n\n[0046]图2示出了薄膜晶体管112具有其中栅极1123位于有源层1121上方的顶栅结构。然而，薄膜晶体管112可以具有其中栅极1123被设置在有源层1121下方的底栅结构。\n\n[0047]如图2所示，所述第一绝缘层1124设置于所述栅极132上并覆盖所述栅极1123、栅极绝缘层1122和所述有源层1121；并且，所述第一绝缘层1124在对应所述源区和所述漏区分别处设置有第一过孔。\n\n[0048]如图2所示，所述漏极1125和所述源极1126设置于所述第一绝缘层1124上，并分别通过所述第一过孔分别与所述源区和所述漏区电性连接或接触。\n\n[0049]在具体实施时，所述栅极1123、所述漏极1125和所述源极1126可包括金属、合金或金属氮化物。例如，栅极1123可包括诸如铝(Al)、银(Ag)、钨(W)、铜(Cu)、镍(Ni)、铬(Cr)、钼(Mo)、钛(Ti)、铂(Pt)、钽(Ta)和钕(Nd)的金属、其合金和/或其氮化物。这些可以单独使用或以其组合使用。\n\n[0050]请继续参考图2，所述第二绝缘层1127设置于所述漏极1125和所述源极1126上并覆盖所述漏极1125和所述源极1126和所述第一绝缘层1124。\n\n[0051]在具体实施时，所述第二绝缘层1127可以包括有机材料，例如聚酰亚胺、环氧类树脂、丙烯酸类树脂、聚酯和/或类似材料。\n\n[0052]如图2所示，所述公共电极113与所述薄膜晶体管层120的所述漏极1125和所述源极1126同层设置。例如，在本实施例中，所述公共电极113设置于所述第一绝缘层1124上，并被所述第二绝缘层1127所覆盖。\n\n[0053]如图2所示，所述键合电极层120设置于所述衬底基板110上，所述键合电极层120包括复数个键合电极121。\n\n[0054]例如，如图2所示，在本实施例中，所述键合电极层120设置于所述第二绝缘层1127上，所述键合电极121通过设置于所述第二绝缘层1127上的过孔电性连接于所述薄膜晶体管层121的所述漏极1125和所述源极1126，或者，所述公共电极113。\n\n[0055]具体地，所述键合电极121包括电性连接于所述漏极1125或所述源极1126的第一键合电极141，以及，电性连接于所述公共电极的第二键合电极142。\n\n[0056]例如，如图2所示，在本实施例中，所述键合电极121可以为像素电极。\n\n[0057]如图2所示，所述键合凸起200设置于所述键合电极层120上，每一所述键合凸起200对应设置于一所述键合电极121上。\n\n[0058]详细地说，每一所述键合凸起200以所述键合电极121背离所述衬底基板110的表面为起点并朝向背离所述衬底基板110的方向延伸以突出于所述阵列基板100的表面。\n\n[0059]需要指出的是，本发明并未限定所述键合凸起200与所述键合电极121的对应关系。例如，在本实施例中，每一所述键合电极121对应一所述键合凸起200，在其他实施例中，每一所述键合电极121可以对应设置复数个所述键合凸起200。只要对所述键合凸起200的截面尺寸或形状合理配置，能用于微型器件转移过程即可。\n\n[0060]如图2所示，所述键合凸起200包括一导电焊接层210和一绝缘黏胶层220。\n\n[0061]如图2所示，所述导电焊接层210设置于一所述键合电极121并被配置为用于将微型器件300的电极焊接于所述键合电极121上，从而实现所述微型器件300和所述阵列基板100的电性连接。\n\n[0062]具体地，所述导电焊接层210具有的环境熔融温度低于所述键合电极121的环境熔融温度。在具体实施时，所述导电焊接层210的材料为铟、锡、铋、银或金中的至少一种。例如，所述导电焊接层210的材料为In、Sn、AuSn、SnBi、SnAgBi或Au/In中的至少一种。\n\n[0063]在将一微型器件300绑定于所述阵列基板100上时，可以通过对所述键合凸起200的处理使所述导电焊接层210暴露并熔化，以将微型器件300的电极与键合电极121焊接，从而能实现微型器件300和阵列基板100的电性连接。\n\n[0064]其中，“对所述键合凸起150的处理”可以为热压工艺，也可以为其他常见工艺处理方法。本发明并未对所述工艺处理的具体实施方法进行限定。\n\n[0065]需要指出的是，本发明并未限定所述导电焊接层210的膜层结构或形状。例如，在本实施例中，所述导电焊接层210为单层结构。在其他实施例中，所述导电焊接层210可以为多层层叠结构。\n\n[0066]如图2所示，所述绝缘黏胶层220至少包覆位于所述键合电极121上的所述导电焊接层210的外表面的部分区域，并且所述绝缘黏胶层220被配置为用于将所述微型器件300黏附于所述键合凸起200上。\n\n[0067]在微型器件300转移的过程中，所述绝缘黏胶层220能对与其接触的微型器件300黏附于其表面上，从而能将一微型器件300固持于其所属键合凸起200的表面上。\n\n[0068]在具体实施时，所述绝缘黏胶层220可以为针对一个单独设置，也可以为针对多个所述键合凸起200共同设置。\n\n[0069]例如，如图2所示，在本实施例中，所述绝缘黏胶层220为针对多个键合凸起200共同的设置，从而所述绝缘黏胶层220实质上构成一覆盖于所述导电焊接层210、所述键合电极层120以及所述第二绝缘层1127的黏胶绝缘层230。该黏胶绝缘层230同时可以作为所述阵列基板100一外表面。\n\n[0070]或者说，相邻所述键合凸起200的绝缘黏胶层220相互连续以构成一黏胶绝缘层230，所述黏胶绝缘层230覆盖所述导电焊接层210、所述键合电极层110以及所述衬底基板110。\n\n[0071]在其他实施例中，所述绝缘黏胶层220为针对一个键合凸起200单独设置。在该种情况下，本发明并未限定所述绝缘黏胶层220覆盖于所述导电焊接层210的外表面的具体区域位置或面积大小。\n\n[0072]具体地，所述绝缘黏胶层220具有的环境熔融温度低于所述导电焊接层220具有的环境熔融温度。在具体实施时，所述绝缘黏胶层220为有机绝缘胶。例如，所述绝缘黏胶层220为环氧胶类、聚酰亚胺胶类、丙烯酸胶类或硅胶类中的至少一种。\n\n[0073]需要指出的是，本发明并未限定所述键合凸起200的具体结构，图2仅为本发明所述键合凸起200的示意性结构。例如，在其他实施例中，所述键合凸起200还可以采用由具有粘合性的键合材料直接一体形成或分层层叠构成。\n\n[0074]图3为本发明所述阵列基板的第二实施例的结构示意图。与图2所示的阵列基板相比，本实施例所述阵列基板100的键合凸起200的结构不同。\n\n[0075]如图3所示，在本实施例中，所述绝缘黏胶层220仅覆盖所述导电焊接层210背离所述键合电极121的表面。\n\n[0076]图4为本发明所述阵列基板的第三实施例的结构示意图。与图2所示的阵列基板相比，本实施例所述阵列基板100的键合凸起200的结构不同。\n\n[0077]如图4所示，在本实施例中，所述绝缘黏胶层220覆盖所述导电焊接层210背离所述键合电极121的表面以及所述导电焊接层210在其厚度方向的外侧面的部分区域。\n\n[0078]需要指出的是，图2、图3及图4中的仅为所述绝缘黏胶层220的示意性结构。在具体实施时，可以根据键合凸起200或微型器件300的具体需求，对所述绝缘黏胶层220的覆盖位置或覆盖区域进行变更。\n\n[0079]图5A-图5C为本发明所述转移方法的工艺流程图。如图5A-图5C所示，本发明提供一种转移方法，所述转移方法包括以下步骤：\n\n[0080]S1、对位步骤：将承载有微型器件的微型器件阵列与所述阵列基板进行对位，使所述阵列基板上的所述键合凸起对准待转移微型器件；\n\n[0081]S2、转移步骤：将所述待转移微型器件由所述微型器件阵列剥离至所述阵列基板上，所述键合凸起将被剥离的所述微型器件固持于其表面；以及，\n\n[0082]S3、接合步骤：通过所述键合凸起使得被固持的所述微型器件电性连接于述阵列基板。\n\n[0083]如图5A所示，通过所述步骤S1，使所述阵列基板100上的所述键合凸起200对准并接触待转移微型器件300，从而能避免位于所述微型器件阵列上的无需转移的微型器件300与所述阵列基板100接触。\n\n[0084]如图5B所示，通过所述步骤S2剥离过程，使待转移微型器件300与所述微型器件阵列的承载基板400分离并被保持于所述键合凸起200的表面上。\n\n[0085]在具体实施时，所述剥离过程能采用镭射剥离(laser lift-Off)、化学蚀刻(chemical)或热应力剥离(thermal stress)。在本实施例中，所述剥离过程采用激光剥离。\n\n[0086]如图5C所示，在所述步骤S3中，将所述键合凸起200的导电焊接层210和绝缘黏胶层220熔化并冷却固化，将所述微型器件的电极焊接于所述键合电极121上。在具体实施时，上述焊接过程能采用热压工艺实现。\n\n[0087]例如，如图5C所示，在本实施例中，利用bonding头500加热使绝缘黏胶层220熔化掉并暴露出导电焊接层210；然后，bonding头500继续加热使导电焊接层210熔化，与此同时，利用bonding头500的压力下使熔化后的所述导电焊接层210将微型器件300的电极焊接于所述键合电极121上。\n\n[0088]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0089]以上对本发明实施例所提供的一种阵列基板及转移方法进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10889, 23943, '技术领域\n\n[0001]本申请涉及一种显示器技术领域，尤其涉及一种micro-LED显示面板、micro-LED像素电路及显示装置。\n\n背景技术\n\n[0002]近年来，显示行业得到了快速的发展，尤其是我国的显示行业，发生了天翻地覆的变化。通过技术、人才、先进设备的引进、以及核心技术的创新，我国已成为世界显示器制造大国，显示器水平达到世界领先水平。不仅结束了我国少屏的窘境，还引领显示界的潮流。\n\n[0003]显示行业的竞争变得越来越激烈，更新周期不断缩短，以液晶显示器(LiquidCrystal Display，简称LCD)与有机发光半导体(Organic Light-Emitting Diode，简称OLED)的竞争尤为激烈。随着OLED工艺、材料的成熟以及良率的提升，LCD渐渐失去了在小尺寸的市场优势，特别是在手机市场，OLED已渐渐取代LCD的地位。近年来也兴起了很多新型的显示技术，例如量子点发光二极管(Quantum Dot Light Emitting Diodes，简称QLED)显示、E-ink、柔性LCD、mini-LED、micro-LED等等。这些新技术因还存在成本、寿命、可靠性等一些问题，还具备不了像LCD、OLED的量产性。micro-LED因具有色域广、对比度高、响应速度快、分辨率高、寿命长等优点，被很多企业大力推广，同时被视为下一代最具有潜力的新型显示技术。\n\n[0004]micro-LED目前已经生产出了多种产品，但仍然存在很多问题。例如亮度不均匀、可靠性、转移良率低、TFT均匀性差、串色、混色、对比度差等问题。而micro-LED面板亮度不均匀与诸多因素有关，大概可以分为以下几个大类：电压降问题；驱动背板均匀性问题；micro-LED芯片的均匀性问题以及巨量转移的重复性等问题。\n\n发明内容\n\n[0005]为了克服现有技术的不足，本申请实施例提供一种micro-LED显示面板、micro-LED像素电路及显示装置，通过改变可显示区域的外层遮光层图案，形成VDD环绕导电线和VSS环绕导电线，以此来降低面板的电阻，改善了面板的电压降问题，进而达到改善面板亮度不均匀的目的。\n\n[0006]本发明实施例提供了一种micro-LED显示面板，所述micro-LED显示面板包括显示区域与非显示区域，所述非显示区域位于所述micro-LED显示面板的四周；所述micro-LED显示面板包括位于上下侧的第一侧和第二侧，位于左右侧的第三侧和第四侧；\n\n[0007]所述显示区域内包括遮光层，所述遮光层包括：与所述非显示区域邻接的第一遮光层和不与所述非显示区域邻接的第二遮光层；\n\n[0008]所述非显示区域内包括VDD环绕导电线和VSS环绕导电线，VSS环绕导电线设于所述第一侧、所述第二侧、所述第三侧以及所述第四侧上；VDD环绕导电线设于所述第一侧、所述第二侧、所述第三侧以及所述第四侧上；其中，所述VSS环绕导电线环绕在所述第一遮光层的四周，所述VDD环绕导电线环绕在所述VSS环绕导电线的四周；\n\n[0009]所述micro-LED显示面板包括旁路通道与覆晶薄膜，所述VDD环绕导电线和所述VSS环绕导电线通过所述旁路通道与所述覆晶薄膜相连接。\n\n[0010]根据本发明实施例所提供的micro-LED显示面板，所述显示区域包括若干个像素结构，所述像素结构均包含VDD导电线和VSS导电线。\n\n[0011]根据本发明实施例所提供的micro-LED显示面板，所述覆晶薄膜配置成用于发送电信号，所述电信号用于通过所述旁路通道经过所述VSS环绕导电线，再输入到所述显示区域内的所述像素结构中。\n\n[0012]根据本发明实施例所提供的micro-LED显示面板，所述覆晶薄膜配置成用于发送电信号，所述电信号用于通过所述旁路通道经过所述VDD环绕导电线，再输入到所述显示区域内的所述像素结构中。\n\n[0013]根据本发明实施例所提供的micro-LED显示面板，所述覆晶薄膜配置成用于发送电信号到所述显示区域内的所述像素结构中。\n\n[0014]本实施例还提供一种micro-LED像素电路，所述micro-LED像素电路包括位于上下侧的第一侧和第二侧，位于左右侧的第三侧和第四侧；覆晶薄膜，设于所述第一侧的下方；VSS环绕导电线设于所述第一侧、所述第二侧、所述第三侧以及所述第四侧上；VDD环绕导电线设于所述第一侧、所述第二侧、所述第三侧以及所述第四侧上，其中，所述VDD环绕导电线环绕在所述VSS环绕导电线的四周；若干个像素结构，若干个所述像素结构设置在所述VSS环绕导电线形成的环内；以及旁路通道；\n\n[0015]其中，所述VDD环绕导电线与所述VSS环绕导电线通过所述旁路通道与所述覆晶薄膜相连接；若干个所述像素结构与所述覆晶薄膜相连接。\n\n[0016]根据本发明实施例所提供的micro-LED像素电路，所述覆晶薄膜配置成用于发送电信号，所述电信号用于通过所述旁路通道经过所述VSS环绕导电线，再输入到所述像素结构中。\n\n[0017]根据本发明实施例所提供的micro-LED像素电路，所述覆晶薄膜配置成用于发送电信号，所述电信号用于通过所述旁路通道经过所述VDD环绕导电线，再输入到所述像素结构中。\n\n[0018]根据本发明实施例所提供的micro-LED像素电路，所述覆晶薄膜配置成用于直接发送电信号到若干个所述像素结构中。\n\n[0019]本实施例还提供一种显示装置，所述显示装置包括上述实施例任一项所述的micro-LED像素电路。\n\n[0020]本发明的有益效果为：本实施例所提供的一种micro-LED显示面板、micro-LED像素电路及显示装置，通过将显示区域最外围的一圈或几圈像素结构进行特殊的设计，将最外围的所述像素结构的遮光层图形进行分割，且分割成第一遮光层、VDD功能层以及VSS功能层。并将上述由所述遮光层分隔出来的所述VDD功能层以及VSS功能层分别连接起来，形成VDD环绕导电线和VSS环绕导电线，并通过覆晶薄膜的旁路通道和覆晶薄膜相连接起来。在所述micro-LED显示面板工作时，所述覆晶薄膜通过所述旁路通道将电信号传输到所述VDD环绕导电线和所述VSS环绕导电线中，再由所述VDD环绕导电线和所述VSS环绕导电线将电信号传输到显示区域内的像素结构中，且所述覆晶薄膜还直接输入电信号到所述显示区域的所述像素结构中的所述VDD导电线和所述VSS导电线中。本实施例所提供的micro-LED显示面板通过在显示区外围构造VDD环绕导电线和VSS环绕导电线，来降低显示面板的电阻，改善了显示面板的电压降问题，进而达到了改善显示面板亮度显示不均匀的问题，提升了micro-LED显示面板的显示品质。\n\n附图说明\n\n[0021]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0022]图1为现有技术中常见的micro-LED显示面板示意图。\n\n[0023]图2为本实施例提供的micro-LED显示面板结构示意图。\n\n具体实施方式\n\n[0024]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0025]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0026]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0027]如图1所示，为现有技术中常见的micro-LED显示面板示意图。参阅图1可知，所述micro-LED显示面板包括位于上下侧的第一侧1和第二侧2，位于左右侧的第三侧3和第四侧4；在现有技术中的所述micro-LED显示面板包括显示区域与非显示区域，所述显示区域内包括若干个像素结构10以及若干个遮光层11，所述非显示区域设置在所述显示区域的四周并包围所述显示区域。在所述第二侧2还设置有覆晶薄膜(Chip On Film，简称COF)20。其中，在若干个所述像素结构10中均包括VDD导电线和VSS导电线；所述VDD导电线和所述VSS导电线与所述覆晶薄膜20相连接。所述覆晶薄膜20发送电信号给所述VDD导电线和所述VSS导电线，从而驱动若干个所述像素结构10。而在现有技术中的所述micro-LED显示面板中由于导线电阻不均匀的存在，很容易造成显示面板产出电压降的问题，从而导致面板亮度显示不均匀的问题。\n\n[0028]针对现有技术中micro-LED显示面板容易造成电压降的问题，本实施例提供一种micro-LED显示面板、micro-LED像素电路及显示装置，用一种新的结构来降低显示面板的电阻，改善显示面板电压降的问题，从而达到改善面板亮度不均匀的目的。\n\n[0029]如图2所示，为本实施例所提供的一种micro-LED显示面板结构示意图。参阅图2，所述micro-LED显示面板包括显示区域100与非显示区域200，所述非显示区域200位于所述micro-LED显示面板的四周；所述micro-LED显示面板包括位于上下侧的第一侧1和第二侧2，位于左右侧的第三侧3和第四侧4；\n\n[0030]所述显示区域100内包括遮光层11，所述遮光层11包括：与所述非显示区域200邻接的第一遮光层111和不与所述非显示区域200邻接的第二遮光层112；\n\n[0031]所述非显示区域200内包括VDD环绕导电线30和VSS环绕导电线40，所述VSS环绕导电线40设于所述第一侧1、所述第二侧2、所述第三侧3以及所述第四侧4上；所述VDD环绕导电线30设于所述第一侧1、所述第二侧2、所述第三侧3以及所述第四侧4上；其中，所述VSS环绕导电线40环绕在所述第一遮光层111的四周，所述VDD环绕导电线30环绕在所述VSS环绕导电线40的四周；\n\n[0032]所述micro-LED显示面板包括旁路通道21与覆晶薄膜20(COF)，所述VDD环绕导电线30和所述VSS环绕导电线40通过所述旁路通道21与所述覆晶薄膜20(COF)相连接。所述覆晶薄膜20设置在所述第二侧2的下方。\n\n[0033]其中，在所述显示区域100内还包括如干个像素结构10，所述像素结构10均包含VDD导电线和VSS导电线。所述VDD导电线和所述VSS导电线均与所述覆晶薄膜20相连接。\n\n[0034]如图2所示，在所述micro-LED显示面板的所述第一侧1包括所述第一遮光层111，位于所述第一侧1的VDD功能模块以及位于所述第一侧1的VSS功能模块；在所述micro-LED显示面板的所述第二侧2包括所述第一遮光层111，位于所述第二侧2的VDD功能模块以及位于所述第二侧2的VSS功能模块；在所述micro-LED显示面板的所述第三侧3包括所述第一遮光层111，位于所述第三侧3的VDD功能模块以及位于所述第三侧3的VSS功能模块；在所述micro-LED显示面板的所述第四侧4包括所述第一遮光层111，位于所述第四侧4的VDD功能模块以及位于所述第四侧4的VSS功能模块。位于所述第一侧1的VDD功能模块、位于第二侧2的VDD功能模块、位于第三侧3的VDD功能模块以及位于第四侧4的VDD功能模块相互连接并形成所述VDD环绕导电线30。位于所述第一侧1的VSS功能模块、位于第二侧2的VSS功能模块、位于第三侧3的VSS功能模块以及位于第四侧4的VSS功能模块相互连接并形成所述VSS环绕导电线40。\n\n[0035]在所述micro-LED显示面板显示工作时，所述覆晶薄膜20配置成用于发送电信号，所述电信号用于通过所述旁路通道21经过所述VSS环绕导电线40，所述VSS环绕导电线40再将电信号输入到所述显示区域100内的所述像素结构10中；所述覆晶薄膜20配置成用于发送电信号，所述电信号用于通过所述旁路通道21经过所述VDD环绕导电线30，所述VDD环绕导电线30再将电信号输入到所述显示区域100内的所述像素结构10中；所述覆晶薄膜20配置成用于发送电信号到所述显示区域100的所述像素结构10中的所述VDD导电线和所述VSS导电线中。\n\n[0036]本实施例所提供的micro-LED显示面板通过将显示区域100最外围的一圈或几圈像素结构10进行特殊的设计，将最外围的所述像素结构10的遮光层11图形进行分割，且分割成第一遮光层111、VDD功能层以及VSS功能层。并将上述由所述遮光层11分隔出来的所述VDD功能层以及VSS功能层分别连接起来，形成VDD环绕导电线30和VSS环绕导电线40，并通过覆晶薄膜20的旁路通道21和所述覆晶薄膜20相连接起来。在所述micro-LED显示面板工作时，所述覆晶薄膜20配置成用于发送电信号，所述电信号用于通过所述旁路通道21传输到所述VDD环绕导电线30和所述VSS环绕导电线40中，再由所述VDD环绕导电线30和所述VSS环绕导电线40将电信号传输到显示区域100内的像素结构10中，且所述覆晶薄膜20配置成用于直接发送电信号到所述显示区域100的所述像素结构10中的所述VDD导电线和所述VSS导电线中。本实施例所提供的micro-LED显示面板通过在显示区域100外围构造VDD环绕导电线30和VSS环绕导电线40，来降低显示面板的电阻，改善了显示面板的电压降问题，进而达到了改善显示面板亮度显示不均匀的问题，提升了micro-LED显示面板的显示品质。\n\n[0037]本实施例还提供了一种micro-LED像素电路，所述micro-LED像素电路包括位于上下侧的第一侧和第二侧，位于左右侧的第三侧和第四侧；覆晶薄膜(COF)，设于所述第一侧的下方；VSS环绕导电线设于所述第一侧、所述第二侧、所述第三侧以及所述第四侧上；VDD环绕导电线设于所述第一侧、所述第二侧、所述第三侧以及所述第四侧上，其中，所述VDD环绕导电线环绕在所述VSS环绕导电线的四周；若干个像素结构，若干个所述像素结构设置在所述VSS环绕导电线形成的环内；以及旁路通道；\n\n[0038]其中，所述VDD环绕导电线与所述VSS环绕导电线通过所述旁路通道与所述覆晶薄膜相连接；若干个所述像素结构与所述覆晶薄膜相连接。\n\n[0039]位于所述第一侧的所述VSS环绕导电线、位于所述第二侧的所述VSS环绕导电线、位于所述第三侧的所述VSS环绕导电线以及位于所述第四侧的所述VSS环绕导电线相互连接形成所述VSS环绕导电线，并包围若干个所述像素结构；位于所述第一侧的所述VDD环绕导电线、位于所述第二侧的所述VDD环绕导电线、位于所述第三侧的所述VDD环绕导电线以及位于所述第四侧的所述VDD环绕导电线相互连接形成所述VDD环绕导电线，并包围所述所述VSS环绕导电线。\n\n[0040]在所述micro-LED像素电路工作时，所述覆晶薄膜配置成用于发送电信号，所述电信号用于通过所述旁路通道经过所述VSS环绕导电线，所述VSS环绕导电线再将电信号输入到若干个所述像素结构中；所述覆晶薄膜配置成用于发送电信号，所述电信号用于通过所述旁路通道经过所述VDD环绕导电线，所述VDD环绕导电线再将电信号输入到若干个所述像素结构中；所述覆晶薄膜配置成用于发送电信号到若干个所述像素结构中的所述VDD导电线和所述VSS导电线中。\n\n[0041]本实施例还提供一种显示装置，该显示装置应用了本实施所提供的micro-LED像素电路。\n\n[0042]本实施例所提供的一种micro-LED显示面板、micro-LED像素电路及显示装置，通过将显示区域最外围的一圈或几圈像素结构进行特殊的设计，将最外围的所述像素结构的遮光层图形进行分割，且分割成第一遮光层、VDD功能层以及VSS功能层。并将上述由所述遮光层分隔出来的所述VDD功能层以及VSS功能层分别连接起来，形成VDD环绕导电线和VSS环绕导电线，并通过覆晶薄膜的旁路通道和覆晶薄膜相连接起来。在所述micro-LED显示面板工作时，所述覆晶薄膜通过所述旁路通道将电信号传输到所述VDD环绕导电线和所述VSS环绕导电线中，再由所述VDD环绕导电线和所述VSS环绕导电线将电信号传输到显示区域内的像素结构中，且所述覆晶薄膜还直接输入电信号到所述显示区域的所述像素结构中的所述VDD导电线和所述VSS导电线中。本实施例所提供的micro-LED显示面板通过在显示区外围构造VDD环绕导电线和VSS环绕导电线，来降低显示面板的电阻，改善了显示面板的电压降问题，进而达到了改善显示面板亮度显示不均匀的问题，提升了micro-LED显示面板的显示品质。\n\n[0043]以上对本申请实施例所提供的一种一种micro-LED显示面板、micro-LED像素电路及显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及一种显示器技术领域，尤其涉及一种micro-LED显示面板、micro-LED像素电路及显示装置。\n\n背景技术\n\n[0002]近年来，显示行业得到了快速的发展，尤其是我国的显示行业，发生了天翻地覆的变化。通过技术、人才、先进设备的引进、以及核心技术的创新，我国已成为世界显示器制造大国，显示器水平达到世界领先水平。不仅结束了我国少屏的窘境，还引领显示界的潮流。\n\n[0003]显示行业的竞争变得越来越激烈，更新周期不断缩短，以液晶显示器(LiquidCrystal Display，简称LCD)与有机发光半导体(Organic Light-Emitting Diode，简称OLED)的竞争尤为激烈。随着OLED工艺、材料的成熟以及良率的提升，LCD渐渐失去了在小尺寸的市场优势，特别是在手机市场，OLED已渐渐取代LCD的地位。近年来也兴起了很多新型的显示技术，例如量子点发光二极管(Quantum Dot Light Emitting Diodes，简称QLED)显示、E-ink、柔性LCD、mini-LED、micro-LED等等。这些新技术因还存在成本、寿命、可靠性等一些问题，还具备不了像LCD、OLED的量产性。micro-LED因具有色域广、对比度高、响应速度快、分辨率高、寿命长等优点，被很多企业大力推广，同时被视为下一代最具有潜力的新型显示技术。\n\n[0004]micro-LED目前已经生产出了多种产品，但仍然存在很多问题。例如亮度不均匀、可靠性、转移良率低、TFT均匀性差、串色、混色、对比度差等问题。而micro-LED面板亮度不均匀与诸多因素有关，大概可以分为以下几个大类：电压降问题；驱动背板均匀性问题；micro-LED芯片的均匀性问题以及巨量转移的重复性等问题。\n\n发明内容\n\n[0005]为了克服现有技术的不足，本申请实施例提供一种micro-LED显示面板、micro-LED像素电路及显示装置，通过改变可显示区域的外层遮光层图案，形成VDD环绕导电线和VSS环绕导电线，以此来降低面板的电阻，改善了面板的电压降问题，进而达到改善面板亮度不均匀的目的。\n\n[0006]本发明实施例提供了一种micro-LED显示面板，所述micro-LED显示面板包括显示区域与非显示区域，所述非显示区域位于所述micro-LED显示面板的四周；所述micro-LED显示面板包括位于上下侧的第一侧和第二侧，位于左右侧的第三侧和第四侧；\n\n[0007]所述显示区域内包括遮光层，所述遮光层包括：与所述非显示区域邻接的第一遮光层和不与所述非显示区域邻接的第二遮光层；\n\n[0008]所述非显示区域内包括VDD环绕导电线和VSS环绕导电线，VSS环绕导电线设于所述第一侧、所述第二侧、所述第三侧以及所述第四侧上；VDD环绕导电线设于所述第一侧、所述第二侧、所述第三侧以及所述第四侧上；其中，所述VSS环绕导电线环绕在所述第一遮光层的四周，所述VDD环绕导电线环绕在所述VSS环绕导电线的四周；\n\n[0009]所述micro-LED显示面板包括旁路通道与覆晶薄膜，所述VDD环绕导电线和所述VSS环绕导电线通过所述旁路通道与所述覆晶薄膜相连接。\n\n[0010]根据本发明实施例所提供的micro-LED显示面板，所述显示区域包括若干个像素结构，所述像素结构均包含VDD导电线和VSS导电线。\n\n[0011]根据本发明实施例所提供的micro-LED显示面板，所述覆晶薄膜配置成用于发送电信号，所述电信号用于通过所述旁路通道经过所述VSS环绕导电线，再输入到所述显示区域内的所述像素结构中。\n\n[0012]根据本发明实施例所提供的micro-LED显示面板，所述覆晶薄膜配置成用于发送电信号，所述电信号用于通过所述旁路通道经过所述VDD环绕导电线，再输入到所述显示区域内的所述像素结构中。\n\n[0013]根据本发明实施例所提供的micro-LED显示面板，所述覆晶薄膜配置成用于发送电信号到所述显示区域内的所述像素结构中。\n\n[0014]本实施例还提供一种micro-LED像素电路，所述micro-LED像素电路包括位于上下侧的第一侧和第二侧，位于左右侧的第三侧和第四侧；覆晶薄膜，设于所述第一侧的下方；VSS环绕导电线设于所述第一侧、所述第二侧、所述第三侧以及所述第四侧上；VDD环绕导电线设于所述第一侧、所述第二侧、所述第三侧以及所述第四侧上，其中，所述VDD环绕导电线环绕在所述VSS环绕导电线的四周；若干个像素结构，若干个所述像素结构设置在所述VSS环绕导电线形成的环内；以及旁路通道；\n\n[0015]其中，所述VDD环绕导电线与所述VSS环绕导电线通过所述旁路通道与所述覆晶薄膜相连接；若干个所述像素结构与所述覆晶薄膜相连接。\n\n[0016]根据本发明实施例所提供的micro-LED像素电路，所述覆晶薄膜配置成用于发送电信号，所述电信号用于通过所述旁路通道经过所述VSS环绕导电线，再输入到所述像素结构中。\n\n[0017]根据本发明实施例所提供的micro-LED像素电路，所述覆晶薄膜配置成用于发送电信号，所述电信号用于通过所述旁路通道经过所述VDD环绕导电线，再输入到所述像素结构中。\n\n[0018]根据本发明实施例所提供的micro-LED像素电路，所述覆晶薄膜配置成用于直接发送电信号到若干个所述像素结构中。\n\n[0019]本实施例还提供一种显示装置，所述显示装置包括上述实施例任一项所述的micro-LED像素电路。\n\n[0020]本发明的有益效果为：本实施例所提供的一种micro-LED显示面板、micro-LED像素电路及显示装置，通过将显示区域最外围的一圈或几圈像素结构进行特殊的设计，将最外围的所述像素结构的遮光层图形进行分割，且分割成第一遮光层、VDD功能层以及VSS功能层。并将上述由所述遮光层分隔出来的所述VDD功能层以及VSS功能层分别连接起来，形成VDD环绕导电线和VSS环绕导电线，并通过覆晶薄膜的旁路通道和覆晶薄膜相连接起来。在所述micro-LED显示面板工作时，所述覆晶薄膜通过所述旁路通道将电信号传输到所述VDD环绕导电线和所述VSS环绕导电线中，再由所述VDD环绕导电线和所述VSS环绕导电线将电信号传输到显示区域内的像素结构中，且所述覆晶薄膜还直接输入电信号到所述显示区域的所述像素结构中的所述VDD导电线和所述VSS导电线中。本实施例所提供的micro-LED显示面板通过在显示区外围构造VDD环绕导电线和VSS环绕导电线，来降低显示面板的电阻，改善了显示面板的电压降问题，进而达到了改善显示面板亮度显示不均匀的问题，提升了micro-LED显示面板的显示品质。\n\n附图说明\n\n[0021]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0022]图1为现有技术中常见的micro-LED显示面板示意图。\n\n[0023]图2为本实施例提供的micro-LED显示面板结构示意图。\n\n具体实施方式\n\n[0024]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0025]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0026]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0027]如图1所示，为现有技术中常见的micro-LED显示面板示意图。参阅图1可知，所述micro-LED显示面板包括位于上下侧的第一侧1和第二侧2，位于左右侧的第三侧3和第四侧4；在现有技术中的所述micro-LED显示面板包括显示区域与非显示区域，所述显示区域内包括若干个像素结构10以及若干个遮光层11，所述非显示区域设置在所述显示区域的四周并包围所述显示区域。在所述第二侧2还设置有覆晶薄膜(Chip On Film，简称COF)20。其中，在若干个所述像素结构10中均包括VDD导电线和VSS导电线；所述VDD导电线和所述VSS导电线与所述覆晶薄膜20相连接。所述覆晶薄膜20发送电信号给所述VDD导电线和所述VSS导电线，从而驱动若干个所述像素结构10。而在现有技术中的所述micro-LED显示面板中由于导线电阻不均匀的存在，很容易造成显示面板产出电压降的问题，从而导致面板亮度显示不均匀的问题。\n\n[0028]针对现有技术中micro-LED显示面板容易造成电压降的问题，本实施例提供一种micro-LED显示面板、micro-LED像素电路及显示装置，用一种新的结构来降低显示面板的电阻，改善显示面板电压降的问题，从而达到改善面板亮度不均匀的目的。\n\n[0029]如图2所示，为本实施例所提供的一种micro-LED显示面板结构示意图。参阅图2，所述micro-LED显示面板包括显示区域100与非显示区域200，所述非显示区域200位于所述micro-LED显示面板的四周；所述micro-LED显示面板包括位于上下侧的第一侧1和第二侧2，位于左右侧的第三侧3和第四侧4；\n\n[0030]所述显示区域100内包括遮光层11，所述遮光层11包括：与所述非显示区域200邻接的第一遮光层111和不与所述非显示区域200邻接的第二遮光层112；\n\n[0031]所述非显示区域200内包括VDD环绕导电线30和VSS环绕导电线40，所述VSS环绕导电线40设于所述第一侧1、所述第二侧2、所述第三侧3以及所述第四侧4上；所述VDD环绕导电线30设于所述第一侧1、所述第二侧2、所述第三侧3以及所述第四侧4上；其中，所述VSS环绕导电线40环绕在所述第一遮光层111的四周，所述VDD环绕导电线30环绕在所述VSS环绕导电线40的四周；\n\n[0032]所述micro-LED显示面板包括旁路通道21与覆晶薄膜20(COF)，所述VDD环绕导电线30和所述VSS环绕导电线40通过所述旁路通道21与所述覆晶薄膜20(COF)相连接。所述覆晶薄膜20设置在所述第二侧2的下方。\n\n[0033]其中，在所述显示区域100内还包括如干个像素结构10，所述像素结构10均包含VDD导电线和VSS导电线。所述VDD导电线和所述VSS导电线均与所述覆晶薄膜20相连接。\n\n[0034]如图2所示，在所述micro-LED显示面板的所述第一侧1包括所述第一遮光层111，位于所述第一侧1的VDD功能模块以及位于所述第一侧1的VSS功能模块；在所述micro-LED显示面板的所述第二侧2包括所述第一遮光层111，位于所述第二侧2的VDD功能模块以及位于所述第二侧2的VSS功能模块；在所述micro-LED显示面板的所述第三侧3包括所述第一遮光层111，位于所述第三侧3的VDD功能模块以及位于所述第三侧3的VSS功能模块；在所述micro-LED显示面板的所述第四侧4包括所述第一遮光层111，位于所述第四侧4的VDD功能模块以及位于所述第四侧4的VSS功能模块。位于所述第一侧1的VDD功能模块、位于第二侧2的VDD功能模块、位于第三侧3的VDD功能模块以及位于第四侧4的VDD功能模块相互连接并形成所述VDD环绕导电线30。位于所述第一侧1的VSS功能模块、位于第二侧2的VSS功能模块、位于第三侧3的VSS功能模块以及位于第四侧4的VSS功能模块相互连接并形成所述VSS环绕导电线40。\n\n[0035]在所述micro-LED显示面板显示工作时，所述覆晶薄膜20配置成用于发送电信号，所述电信号用于通过所述旁路通道21经过所述VSS环绕导电线40，所述VSS环绕导电线40再将电信号输入到所述显示区域100内的所述像素结构10中；所述覆晶薄膜20配置成用于发送电信号，所述电信号用于通过所述旁路通道21经过所述VDD环绕导电线30，所述VDD环绕导电线30再将电信号输入到所述显示区域100内的所述像素结构10中；所述覆晶薄膜20配置成用于发送电信号到所述显示区域100的所述像素结构10中的所述VDD导电线和所述VSS导电线中。\n\n[0036]本实施例所提供的micro-LED显示面板通过将显示区域100最外围的一圈或几圈像素结构10进行特殊的设计，将最外围的所述像素结构10的遮光层11图形进行分割，且分割成第一遮光层111、VDD功能层以及VSS功能层。并将上述由所述遮光层11分隔出来的所述VDD功能层以及VSS功能层分别连接起来，形成VDD环绕导电线30和VSS环绕导电线40，并通过覆晶薄膜20的旁路通道21和所述覆晶薄膜20相连接起来。在所述micro-LED显示面板工作时，所述覆晶薄膜20配置成用于发送电信号，所述电信号用于通过所述旁路通道21传输到所述VDD环绕导电线30和所述VSS环绕导电线40中，再由所述VDD环绕导电线30和所述VSS环绕导电线40将电信号传输到显示区域100内的像素结构10中，且所述覆晶薄膜20配置成用于直接发送电信号到所述显示区域100的所述像素结构10中的所述VDD导电线和所述VSS导电线中。本实施例所提供的micro-LED显示面板通过在显示区域100外围构造VDD环绕导电线30和VSS环绕导电线40，来降低显示面板的电阻，改善了显示面板的电压降问题，进而达到了改善显示面板亮度显示不均匀的问题，提升了micro-LED显示面板的显示品质。\n\n[0037]本实施例还提供了一种micro-LED像素电路，所述micro-LED像素电路包括位于上下侧的第一侧和第二侧，位于左右侧的第三侧和第四侧；覆晶薄膜(COF)，设于所述第一侧的下方；VSS环绕导电线设于所述第一侧、所述第二侧、所述第三侧以及所述第四侧上；VDD环绕导电线设于所述第一侧、所述第二侧、所述第三侧以及所述第四侧上，其中，所述VDD环绕导电线环绕在所述VSS环绕导电线的四周；若干个像素结构，若干个所述像素结构设置在所述VSS环绕导电线形成的环内；以及旁路通道；\n\n[0038]其中，所述VDD环绕导电线与所述VSS环绕导电线通过所述旁路通道与所述覆晶薄膜相连接；若干个所述像素结构与所述覆晶薄膜相连接。\n\n[0039]位于所述第一侧的所述VSS环绕导电线、位于所述第二侧的所述VSS环绕导电线、位于所述第三侧的所述VSS环绕导电线以及位于所述第四侧的所述VSS环绕导电线相互连接形成所述VSS环绕导电线，并包围若干个所述像素结构；位于所述第一侧的所述VDD环绕导电线、位于所述第二侧的所述VDD环绕导电线、位于所述第三侧的所述VDD环绕导电线以及位于所述第四侧的所述VDD环绕导电线相互连接形成所述VDD环绕导电线，并包围所述所述VSS环绕导电线。\n\n[0040]在所述micro-LED像素电路工作时，所述覆晶薄膜配置成用于发送电信号，所述电信号用于通过所述旁路通道经过所述VSS环绕导电线，所述VSS环绕导电线再将电信号输入到若干个所述像素结构中；所述覆晶薄膜配置成用于发送电信号，所述电信号用于通过所述旁路通道经过所述VDD环绕导电线，所述VDD环绕导电线再将电信号输入到若干个所述像素结构中；所述覆晶薄膜配置成用于发送电信号到若干个所述像素结构中的所述VDD导电线和所述VSS导电线中。\n\n[0041]本实施例还提供一种显示装置，该显示装置应用了本实施所提供的micro-LED像素电路。\n\n[0042]本实施例所提供的一种micro-LED显示面板、micro-LED像素电路及显示装置，通过将显示区域最外围的一圈或几圈像素结构进行特殊的设计，将最外围的所述像素结构的遮光层图形进行分割，且分割成第一遮光层、VDD功能层以及VSS功能层。并将上述由所述遮光层分隔出来的所述VDD功能层以及VSS功能层分别连接起来，形成VDD环绕导电线和VSS环绕导电线，并通过覆晶薄膜的旁路通道和覆晶薄膜相连接起来。在所述micro-LED显示面板工作时，所述覆晶薄膜通过所述旁路通道将电信号传输到所述VDD环绕导电线和所述VSS环绕导电线中，再由所述VDD环绕导电线和所述VSS环绕导电线将电信号传输到显示区域内的像素结构中，且所述覆晶薄膜还直接输入电信号到所述显示区域的所述像素结构中的所述VDD导电线和所述VSS导电线中。本实施例所提供的micro-LED显示面板通过在显示区外围构造VDD环绕导电线和VSS环绕导电线，来降低显示面板的电阻，改善了显示面板的电压降问题，进而达到了改善显示面板亮度显示不均匀的问题，提升了micro-LED显示面板的显示品质。\n\n[0043]以上对本申请实施例所提供的一种一种micro-LED显示面板、micro-LED像素电路及显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10890, 23944, '技术领域\n\n[0001]本发明涉及半导体显示制造技术领域，尤其涉及一种微型发光二极管转移设备及转移方法。\n\n背景技术\n\n[0002]微型发光二极管(Micro Light-Emitting Diode，Micro LED)是一种尺寸为微米级的发光二极管，由于Micro LED的尺寸较小，因此其可以作为显示面板上的像素，采用Micro LED制备得到的显示面板可称为Micro LED显示面板。与有机发光二极管(OrganicLight-Emitting Diode，OLED)显示面板相比，Micro LED显示面板的使用寿命和可视角度均优于OLED显示面板，因此Micro LED显示技术成为目前显示技术领域的研究重点。\n\n[0003]Micro LED显示面板包括阵列基板以及阵列排布在阵列基板上的多颗Micro LED，每颗Micro LED可以视为一个像素。相关技术中，通常采用巨量转移(Mass Transfer)技术将Micro LED转移并放置在阵列基板上，并将Micro LED芯片与阵列基板焊接，最终制备得到Micro LED显示面板。\n\n[0004]巨量转移要求是把微米级别的、几十万甚至上百万的Micro LED晶圆芯片精确地从施主晶圆上分裂出来有序地转移至目标基板(显示阵列基板)上。目前主流的激光加热释放技术或激光剥离技术均需要利用激光穿过透明转移基板使得简单物理形变或光敏材料化学反应使得芯片与晶圆分离。但均无法避免激光对基板伤及对晶片的的热损，无法重复利用，降低使用寿命。\n\n发明内容\n\n[0005]本发明的目的是提供一种微型发光二极管转移设备及转移方法，以解决现有技术中的转移设备会对基板和晶片造成损伤的问题。\n\n[0006]为实现上述目的，本发明提供一种微型发光二极管转移设备，所述微型发光二极管转移设备中包括操作台、光源发生器以及光致磁性基板。\n\n[0007]所述操作台具有一用于放置阵列基板的第一平台以及一用于放置微型发光二极管的第二平台。所述光源发生器与所述操作台相对设置，所述光源发生器具有若干发光单元，每一发光单元都具有一发光侧，所述发光侧朝向所述操作台。所述光致磁性基板具有若干光致磁性单元，所述光致磁性基板设于所述光源发生器的发光侧，且每一发光单元对应一光致磁性单元。其中，当所述光致磁性单元接受光照时，产生磁性用以吸附所述微型发光二极管，当所述光致磁性单元未接受光照时，磁性消失用以释放所述微型发光二极管。\n\n[0008]进一步地，所述微型发光二极管中还包括若干光波过滤器，所述光波过滤器设于每一发光单元和该发光单元所对应的所述光致磁性单元之间。\n\n[0009]进一步地，所述光源发生器中包括光源和透光板。\n\n[0010]所述光源具有一发光侧。所述透光板具有若干透光区和围绕所述透光区的遮光区，所述透光板设于所述光源的发光侧。\n\n[0011]进一步地，所述光致磁性基板中包括转移基板和光致磁性材料层。\n\n[0012]所述转移基板平行于所述光源发生器。所述光致磁性材料层设于所述转移基板朝向光源发生器的一面，且位于所述光致磁性单元中。\n\n[0013]进一步地，所述转移基板上具有若干磁通道，每一磁通道对应一光致磁性单元。所述磁通道中填充有磁性材料。所述磁通道所产生的吸附力小于所述微型发光二极管的重力。\n\n[0014]进一步地，所述光源发生器发出光波波长范围为10纳米-800纳米。\n\n[0015]进一步地，所述发光单元的排布规律与所述阵列基板中像素的排布规律相同。\n\n[0016]进一步地，所述微型发光二极管转移设备中还包括一控制装置，所述控制装置与所述光源发生器连接，其用于控制所述光源发生器开启和关闭以及其发光的光波的强弱。\n\n[0017]进一步地，所述微型发光二极管转移设备中还包括移动装置，所述移动装置与所述光源发生器和所述光致磁性基板连接，其用于同时移动所述光源发生器和所述光致磁性基板。\n\n[0018]本发明中还提供一种微型发光二极管转移方法，其包括以下步骤：\n\n[0019]在操作台上分别放置阵列基板以及微型发光二极管。将光源发生器和光致磁性基板移动至所述微型发光二极管上方。打开所述光源发生器，使所述光致磁性基板产生磁性并吸附所述微型发光二极管。将所述光源发生器和所述光致磁性基板移动至所述阵列基板上方，减弱或关闭所述光源发生器发出的光波，使所述微型发光二极管从所述光致磁性基板上下落至所述阵列基板上。\n\n[0020]进一步的，将所述光源发生器和所述光致磁性基板移动至所述微型发光二极管上方后，将所述光源发生器中的发光单元和所述光致磁性基板中的光致磁性单元与所述微型发光二极管进行对位操作。将所述光源发生器和所述光致磁性基板移动至所述阵列基板上方后，将所述光源发生器和所述光致磁性基板与所述微型发光二极管进行对位操作。\n\n[0021]进一步地，通过控制装置打开所述光源发生器的光源，所述光源产生光波，所述光波经过光波过滤器射入所述光致磁性基板中，激发所述光致磁性单元产生磁性并吸附所述微型发光二极管。通过控制装置关闭所述光源或减少所述光源产生的光波，所述光致磁性单元所产生磁性消失或减弱，被吸附的微型发光二极管得以释放。\n\n[0022]本发明的优点是：本发明的一种微型发光二极管转移设备及转移方法，其利用光磁效应的原理控制磁性的产生，从而控制设备的吸附力，能在常温环境下进行巨量转移，避免常规激光剥离方法对设备部件及微型发光二极管造成的热损伤，提高转移效率，降低生产成本。\n\n附图说明\n\n[0023]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0024]图1为本发明实施例中微型发光二极管转移设备的层状结构示意图；\n\n[0025]图2为本发明实施例中操作台的俯视图；\n\n[0026]图3为本发明实施例中光源发生器的层状结构示意图；\n\n[0027]图4为本发明实施例中光致磁性基板的层状结构示意图；\n\n[0028]图5为本发明实施例中微型发光二极管转移方法的转移流程图。\n\n[0029]图中部件表示如下：\n\n[0030]微型发光二极管转移设备10；\n\n[0031]微型发光二极管20；阵列基板30；\n\n[0032]操作台100；第一平台110；\n\n[0033]第二平台120；光源发生器200；\n\n[0034]发光单元210；发光侧220；\n\n[0035]光源230；透光板240；\n\n[0036]透光区241；遮光区242；\n\n[0037]光波过滤器300；光致磁性基板400；\n\n[0038]光致磁性单元410；光致磁性材料层420；\n\n[0039]转移基板430；磁通道431；\n\n[0040]控制装置500；移动装置600。\n\n具体实施方式\n\n[0041]以下参考说明书附图介绍本发明的优选实施例，证明本发明可以实施，所述发明实施例可以向本领域中的技术人员完整介绍本发明，使其技术内容更加清楚和便于理解。本发明可以通过许多不同形式的发明实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例。\n\n[0042]在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。附图所示的每一部件的尺寸和厚度是任意示出的，本发明并没有限定每个组件的尺寸和厚度。为了使图示更清晰，附图中有些地方适当夸大了部件的厚度。\n\n[0043]此外，以下各发明实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定发明实施例。本发明中所提到的方向用语，例如，“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”、“侧面”等，仅是参考附加图式的方向，因此，使用的方向用语是为了更好、更清楚地说明及理解本发明，而不是指示或暗指所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”、“第三”等仅用于描述目的，而不能理解为指示或暗示相对重要性。\n\n[0044]当某些部件被描述为“在”另一部件“上”时，所述部件可以直接置于所述另一部件上；也可以存在一中间部件，所述部件置于所述中间部件上，且所述中间部件置于另一部件上。当一个部件被描述为“安装至”或“连接至”另一部件时，二者可以理解为直接“安装”或“连接”，或者一个部件通过一中间部件间接“安装至”、或“连接至”另一个部件。\n\n[0045]本发明实施例中提供了一种微型发光二极管转移设备10，如图1所示，所述微型发光二极管转移设备10中具有一操作台100、一光源发生器200以及一光致磁性基板400。\n\n[0046]所述操作台100具有两个工作平台：第一平台110以及第二平台120。如图2所示，所述第一平台110用于放置阵列基板30，所述第二平台120用于放置微型发光二极管20。\n\n[0047]如图1和图3所示，所述光源发生器200设于所述操作台100上方，所述光源发生器200具有若干发光单元210，每一发光单元210都可发出波长为10纳米-800纳米的光波。所述光波从所述发光单元210的发光侧220发出，所述发光侧220朝向所述操作台100。所述光源发生器200用于为所述光致磁性基板400提供光波。\n\n[0048]如图3所示，所述光源发生器200中具有一光源230以及一透光板240。所述光源230用于为所述光源发生器200提供光波，所述光波的波长范围为10纳米-800纳米之内。所述光源230的发光侧220与所述发光单元210的发光侧220相同。所述透光板240上平行于所述操作台100的台面设置。所述透光板240具有若干透光区241和围绕所述透光区241的遮光区242，其中每一透光区241对应一发光单元210设置。所述光源230发出的光波从所述透光板240的透光区241穿过，形成一个个发光单元210。\n\n[0049]如图1和图4所示，所述光致磁性基板400设于所述操作台100和所述光源发生器200之间，位于所述光源发生器200的发光侧220。所述光致磁性基板400具有若干光致磁性单元410，每一光致磁性单元410对应一发光单元210，所述发光单元210发出的光波促使所述光致磁性单元410产生磁性，吸附微型发光二极管20。所述发光单元210在光源发生器200上的排布规律和所述光致磁性单元410在光致磁性基板400上的排布规律与接受转移微型发光二极管20的阵列基板30中像素的排布规律相同，从而使每一个被吸附转移的微型发光二极管20在被释放后能过准确落在相对应的阵列基板30像素位上。\n\n[0050]如图4所示，所述光致磁性基板400中具有一转移基板430以及光致磁性材料层420。所述转移基板430平行于所述透光板240设置，所述光致磁性材料层420设于所述转移基板430朝向所述光源发生器200的一表面上，并且每一光致磁性单元410中均具有一光致磁性材料层420。所述光致磁性材料层420中具有能发生光磁效应的光磁性高分子材料，所述光磁性高分子材料一般为含有铁、钴、镍等离子的高分子螯合物。当光致磁性材料层420受到光照时，光磁性高分子材料会发生光磁效应，从而产生磁性，使光致磁性基板400能够吸附微型发光二极管20。当光致磁性材料层420没有光照时，光磁性高分子材料就不会发生光磁效应，产生的磁性也会消失，所述光致磁性基板400也就没有磁性，被吸附的微型发光二极管20也能得以释放。\n\n[0051]如图4所示，所述转移基板430中具有若干磁通道431，所述磁通道431沿垂直于所述转移基板430靠近所述光源发生器200的一表面的方向贯穿所述转移基板430，并且每一磁通道431对应一光致磁性单元410设置。在每一光致磁性单元410中，所述磁通道431和所述光致磁性材料层420在所述操作台100上的正投影重合。所述磁通道431中填充有硬磁性材料，例如铁氧体材料、金属化合物等。所述磁通道431的磁性较弱，其所产生的吸附力小于被转移的微型发光二极管20的重力，单靠磁通道431的磁性不能吸附微型发光二极管20。所述磁通道431用于巩固光致磁性材料层420的磁性，增加光致磁性基板400的磁性，提高光致磁性基板400对微型发光二极管20的吸附力，提高设备转移过程中的稳定性。\n\n[0052]如图1所示，所述微型发光二极管转移设备10中还具有光波过滤器300、控制装置500和移动装置600。所述光波过滤器300设置在光源发生器200与光致磁性基板400之间，每一发光单元210对应设有一光波过滤器300。所述光波过滤器300用于过滤光波，为光致磁性基板400提供更加稳定的光波，提高光磁性转化的效率。所述控制装置500与所述光源发生器200连接，其用于控制光源发生器200中光源230的开启、关闭以及强弱，从而控制光致磁性基板400的磁性。所述移动装置600与光源发生器200和光致磁性基板400连接，其用于在操作台100的第一平台110和第二平台120之间来回移动所述光源发生器200和所述光致磁性基板400。\n\n[0053]本发明实施例中还提供一种使用上述微型发光二极管转移设备10转移微型发光二极管20的转移方法，所述转移方法的转移流程如图5所示，所述转移方法中包括以下步骤：\n\n[0054]步骤S10)准备工作：在操作台100的第一平台110上放置阵列基板30，在操作台100的第二平台120上放置具有微型发光二极管20的晶圆。\n\n[0055]步骤S20)吸附微型发光二极管20：通过移动装置600将光源发生器200和光致磁性基板400移动至第二平台120上方，并与微型发光二极管20进行对位，使光致磁性基板400上的每一光致磁性单元410分别对应一微型发光二极管20。通过控制装置500打开光源发生器200，使每一个发光单元210都发出光波，并照射在对应的光致磁性单元410，从而使每一个光致磁性单元410都发生光磁效应，产生磁性，进而吸附晶圆上的微型发光二极管20。\n\n[0056]步骤S30)转移至阵列基板30：光源发生器200保持打开状态，移动装置600将光源发生器200和光致磁性基板400移动至第一平台110上，同时被所述光致磁性基板400吸附的微型发光二极管20也被移动至第一平台110上。将所述光致磁性基板400与阵列基板30进行对位，使光致磁性基板400上的每一光致磁性单元410分别对应阵列基板30上的一像素。通过控制装置500减弱或关闭光源发生器200发出的光波，从而使光致磁性基板400的磁性减弱或消失，使其吸附力小于微型发光二极管20的重力，从而无法吸附微型发光二极管20，使微型发光二极管20下落，并由于光致磁性基板400与阵列基板30进行过对位操作，所以光致磁性基板400上所吸附的每一个微型发光二极管20都能对应落在阵列基板30的相应像素位上，从而完成转移。\n\n[0057]本发明实施例中所提供的微型发光二极管转移设备10，其在能过在常温状态下进行巨量转移并有效释放，避免常规激光剥离方法对转移基板430及微型发光二极管20造成的热损伤，提高了设备部件的使用寿命，转移基板430也能够重复使用，降低生产成本，且该设备的转移方法操作流程简单，易操作，能够有效提高转移效率。\n\n[0058]虽然在本文中参照了特定的实施方式来描述本发明，但是应该理解的是，这些实施例仅仅是本发明的原理和应用的示例。因此应该理解的是，可以对示例性的实施例进行许多修改，并且可以设计出其他的布置，只要不偏离所附权利要求所限定的本发明的精神和范围。应该理解的是，可以通过不同于原始权利要求所描述的方式来结合不同的从属权利要求和本文中所述的特征。还可以理解的是，结合单独实施例所描述的特征可以使用在其他所述实施例中。', '技术领域\n\n[0001]本发明涉及半导体显示制造技术领域，尤其涉及一种微型发光二极管转移设备及转移方法。\n\n背景技术\n\n[0002]微型发光二极管(Micro Light-Emitting Diode，Micro LED)是一种尺寸为微米级的发光二极管，由于Micro LED的尺寸较小，因此其可以作为显示面板上的像素，采用Micro LED制备得到的显示面板可称为Micro LED显示面板。与有机发光二极管(OrganicLight-Emitting Diode，OLED)显示面板相比，Micro LED显示面板的使用寿命和可视角度均优于OLED显示面板，因此Micro LED显示技术成为目前显示技术领域的研究重点。\n\n[0003]Micro LED显示面板包括阵列基板以及阵列排布在阵列基板上的多颗Micro LED，每颗Micro LED可以视为一个像素。相关技术中，通常采用巨量转移(Mass Transfer)技术将Micro LED转移并放置在阵列基板上，并将Micro LED芯片与阵列基板焊接，最终制备得到Micro LED显示面板。\n\n[0004]巨量转移要求是把微米级别的、几十万甚至上百万的Micro LED晶圆芯片精确地从施主晶圆上分裂出来有序地转移至目标基板(显示阵列基板)上。目前主流的激光加热释放技术或激光剥离技术均需要利用激光穿过透明转移基板使得简单物理形变或光敏材料化学反应使得芯片与晶圆分离。但均无法避免激光对基板伤及对晶片的的热损，无法重复利用，降低使用寿命。\n\n发明内容\n\n[0005]本发明的目的是提供一种微型发光二极管转移设备及转移方法，以解决现有技术中的转移设备会对基板和晶片造成损伤的问题。\n\n[0006]为实现上述目的，本发明提供一种微型发光二极管转移设备，所述微型发光二极管转移设备中包括操作台、光源发生器以及光致磁性基板。\n\n[0007]所述操作台具有一用于放置阵列基板的第一平台以及一用于放置微型发光二极管的第二平台。所述光源发生器与所述操作台相对设置，所述光源发生器具有若干发光单元，每一发光单元都具有一发光侧，所述发光侧朝向所述操作台。所述光致磁性基板具有若干光致磁性单元，所述光致磁性基板设于所述光源发生器的发光侧，且每一发光单元对应一光致磁性单元。其中，当所述光致磁性单元接受光照时，产生磁性用以吸附所述微型发光二极管，当所述光致磁性单元未接受光照时，磁性消失用以释放所述微型发光二极管。\n\n[0008]进一步地，所述微型发光二极管中还包括若干光波过滤器，所述光波过滤器设于每一发光单元和该发光单元所对应的所述光致磁性单元之间。\n\n[0009]进一步地，所述光源发生器中包括光源和透光板。\n\n[0010]所述光源具有一发光侧。所述透光板具有若干透光区和围绕所述透光区的遮光区，所述透光板设于所述光源的发光侧。\n\n[0011]进一步地，所述光致磁性基板中包括转移基板和光致磁性材料层。\n\n[0012]所述转移基板平行于所述光源发生器。所述光致磁性材料层设于所述转移基板朝向光源发生器的一面，且位于所述光致磁性单元中。\n\n[0013]进一步地，所述转移基板上具有若干磁通道，每一磁通道对应一光致磁性单元。所述磁通道中填充有磁性材料。所述磁通道所产生的吸附力小于所述微型发光二极管的重力。\n\n[0014]进一步地，所述光源发生器发出光波波长范围为10纳米-800纳米。\n\n[0015]进一步地，所述发光单元的排布规律与所述阵列基板中像素的排布规律相同。\n\n[0016]进一步地，所述微型发光二极管转移设备中还包括一控制装置，所述控制装置与所述光源发生器连接，其用于控制所述光源发生器开启和关闭以及其发光的光波的强弱。\n\n[0017]进一步地，所述微型发光二极管转移设备中还包括移动装置，所述移动装置与所述光源发生器和所述光致磁性基板连接，其用于同时移动所述光源发生器和所述光致磁性基板。\n\n[0018]本发明中还提供一种微型发光二极管转移方法，其包括以下步骤：\n\n[0019]在操作台上分别放置阵列基板以及微型发光二极管。将光源发生器和光致磁性基板移动至所述微型发光二极管上方。打开所述光源发生器，使所述光致磁性基板产生磁性并吸附所述微型发光二极管。将所述光源发生器和所述光致磁性基板移动至所述阵列基板上方，减弱或关闭所述光源发生器发出的光波，使所述微型发光二极管从所述光致磁性基板上下落至所述阵列基板上。\n\n[0020]进一步的，将所述光源发生器和所述光致磁性基板移动至所述微型发光二极管上方后，将所述光源发生器中的发光单元和所述光致磁性基板中的光致磁性单元与所述微型发光二极管进行对位操作。将所述光源发生器和所述光致磁性基板移动至所述阵列基板上方后，将所述光源发生器和所述光致磁性基板与所述微型发光二极管进行对位操作。\n\n[0021]进一步地，通过控制装置打开所述光源发生器的光源，所述光源产生光波，所述光波经过光波过滤器射入所述光致磁性基板中，激发所述光致磁性单元产生磁性并吸附所述微型发光二极管。通过控制装置关闭所述光源或减少所述光源产生的光波，所述光致磁性单元所产生磁性消失或减弱，被吸附的微型发光二极管得以释放。\n\n[0022]本发明的优点是：本发明的一种微型发光二极管转移设备及转移方法，其利用光磁效应的原理控制磁性的产生，从而控制设备的吸附力，能在常温环境下进行巨量转移，避免常规激光剥离方法对设备部件及微型发光二极管造成的热损伤，提高转移效率，降低生产成本。\n\n附图说明\n\n[0023]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0024]图1为本发明实施例中微型发光二极管转移设备的层状结构示意图；\n\n[0025]图2为本发明实施例中操作台的俯视图；\n\n[0026]图3为本发明实施例中光源发生器的层状结构示意图；\n\n[0027]图4为本发明实施例中光致磁性基板的层状结构示意图；\n\n[0028]图5为本发明实施例中微型发光二极管转移方法的转移流程图。\n\n[0029]图中部件表示如下：\n\n[0030]微型发光二极管转移设备10；\n\n[0031]微型发光二极管20；阵列基板30；\n\n[0032]操作台100；第一平台110；\n\n[0033]第二平台120；光源发生器200；\n\n[0034]发光单元210；发光侧220；\n\n[0035]光源230；透光板240；\n\n[0036]透光区241；遮光区242；\n\n[0037]光波过滤器300；光致磁性基板400；\n\n[0038]光致磁性单元410；光致磁性材料层420；\n\n[0039]转移基板430；磁通道431；\n\n[0040]控制装置500；移动装置600。\n\n具体实施方式\n\n[0041]以下参考说明书附图介绍本发明的优选实施例，证明本发明可以实施，所述发明实施例可以向本领域中的技术人员完整介绍本发明，使其技术内容更加清楚和便于理解。本发明可以通过许多不同形式的发明实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例。\n\n[0042]在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。附图所示的每一部件的尺寸和厚度是任意示出的，本发明并没有限定每个组件的尺寸和厚度。为了使图示更清晰，附图中有些地方适当夸大了部件的厚度。\n\n[0043]此外，以下各发明实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定发明实施例。本发明中所提到的方向用语，例如，“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”、“侧面”等，仅是参考附加图式的方向，因此，使用的方向用语是为了更好、更清楚地说明及理解本发明，而不是指示或暗指所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”、“第三”等仅用于描述目的，而不能理解为指示或暗示相对重要性。\n\n[0044]当某些部件被描述为“在”另一部件“上”时，所述部件可以直接置于所述另一部件上；也可以存在一中间部件，所述部件置于所述中间部件上，且所述中间部件置于另一部件上。当一个部件被描述为“安装至”或“连接至”另一部件时，二者可以理解为直接“安装”或“连接”，或者一个部件通过一中间部件间接“安装至”、或“连接至”另一个部件。\n\n[0045]本发明实施例中提供了一种微型发光二极管转移设备10，如图1所示，所述微型发光二极管转移设备10中具有一操作台100、一光源发生器200以及一光致磁性基板400。\n\n[0046]所述操作台100具有两个工作平台：第一平台110以及第二平台120。如图2所示，所述第一平台110用于放置阵列基板30，所述第二平台120用于放置微型发光二极管20。\n\n[0047]如图1和图3所示，所述光源发生器200设于所述操作台100上方，所述光源发生器200具有若干发光单元210，每一发光单元210都可发出波长为10纳米-800纳米的光波。所述光波从所述发光单元210的发光侧220发出，所述发光侧220朝向所述操作台100。所述光源发生器200用于为所述光致磁性基板400提供光波。\n\n[0048]如图3所示，所述光源发生器200中具有一光源230以及一透光板240。所述光源230用于为所述光源发生器200提供光波，所述光波的波长范围为10纳米-800纳米之内。所述光源230的发光侧220与所述发光单元210的发光侧220相同。所述透光板240上平行于所述操作台100的台面设置。所述透光板240具有若干透光区241和围绕所述透光区241的遮光区242，其中每一透光区241对应一发光单元210设置。所述光源230发出的光波从所述透光板240的透光区241穿过，形成一个个发光单元210。\n\n[0049]如图1和图4所示，所述光致磁性基板400设于所述操作台100和所述光源发生器200之间，位于所述光源发生器200的发光侧220。所述光致磁性基板400具有若干光致磁性单元410，每一光致磁性单元410对应一发光单元210，所述发光单元210发出的光波促使所述光致磁性单元410产生磁性，吸附微型发光二极管20。所述发光单元210在光源发生器200上的排布规律和所述光致磁性单元410在光致磁性基板400上的排布规律与接受转移微型发光二极管20的阵列基板30中像素的排布规律相同，从而使每一个被吸附转移的微型发光二极管20在被释放后能过准确落在相对应的阵列基板30像素位上。\n\n[0050]如图4所示，所述光致磁性基板400中具有一转移基板430以及光致磁性材料层420。所述转移基板430平行于所述透光板240设置，所述光致磁性材料层420设于所述转移基板430朝向所述光源发生器200的一表面上，并且每一光致磁性单元410中均具有一光致磁性材料层420。所述光致磁性材料层420中具有能发生光磁效应的光磁性高分子材料，所述光磁性高分子材料一般为含有铁、钴、镍等离子的高分子螯合物。当光致磁性材料层420受到光照时，光磁性高分子材料会发生光磁效应，从而产生磁性，使光致磁性基板400能够吸附微型发光二极管20。当光致磁性材料层420没有光照时，光磁性高分子材料就不会发生光磁效应，产生的磁性也会消失，所述光致磁性基板400也就没有磁性，被吸附的微型发光二极管20也能得以释放。\n\n[0051]如图4所示，所述转移基板430中具有若干磁通道431，所述磁通道431沿垂直于所述转移基板430靠近所述光源发生器200的一表面的方向贯穿所述转移基板430，并且每一磁通道431对应一光致磁性单元410设置。在每一光致磁性单元410中，所述磁通道431和所述光致磁性材料层420在所述操作台100上的正投影重合。所述磁通道431中填充有硬磁性材料，例如铁氧体材料、金属化合物等。所述磁通道431的磁性较弱，其所产生的吸附力小于被转移的微型发光二极管20的重力，单靠磁通道431的磁性不能吸附微型发光二极管20。所述磁通道431用于巩固光致磁性材料层420的磁性，增加光致磁性基板400的磁性，提高光致磁性基板400对微型发光二极管20的吸附力，提高设备转移过程中的稳定性。\n\n[0052]如图1所示，所述微型发光二极管转移设备10中还具有光波过滤器300、控制装置500和移动装置600。所述光波过滤器300设置在光源发生器200与光致磁性基板400之间，每一发光单元210对应设有一光波过滤器300。所述光波过滤器300用于过滤光波，为光致磁性基板400提供更加稳定的光波，提高光磁性转化的效率。所述控制装置500与所述光源发生器200连接，其用于控制光源发生器200中光源230的开启、关闭以及强弱，从而控制光致磁性基板400的磁性。所述移动装置600与光源发生器200和光致磁性基板400连接，其用于在操作台100的第一平台110和第二平台120之间来回移动所述光源发生器200和所述光致磁性基板400。\n\n[0053]本发明实施例中还提供一种使用上述微型发光二极管转移设备10转移微型发光二极管20的转移方法，所述转移方法的转移流程如图5所示，所述转移方法中包括以下步骤：\n\n[0054]步骤S10)准备工作：在操作台100的第一平台110上放置阵列基板30，在操作台100的第二平台120上放置具有微型发光二极管20的晶圆。\n\n[0055]步骤S20)吸附微型发光二极管20：通过移动装置600将光源发生器200和光致磁性基板400移动至第二平台120上方，并与微型发光二极管20进行对位，使光致磁性基板400上的每一光致磁性单元410分别对应一微型发光二极管20。通过控制装置500打开光源发生器200，使每一个发光单元210都发出光波，并照射在对应的光致磁性单元410，从而使每一个光致磁性单元410都发生光磁效应，产生磁性，进而吸附晶圆上的微型发光二极管20。\n\n[0056]步骤S30)转移至阵列基板30：光源发生器200保持打开状态，移动装置600将光源发生器200和光致磁性基板400移动至第一平台110上，同时被所述光致磁性基板400吸附的微型发光二极管20也被移动至第一平台110上。将所述光致磁性基板400与阵列基板30进行对位，使光致磁性基板400上的每一光致磁性单元410分别对应阵列基板30上的一像素。通过控制装置500减弱或关闭光源发生器200发出的光波，从而使光致磁性基板400的磁性减弱或消失，使其吸附力小于微型发光二极管20的重力，从而无法吸附微型发光二极管20，使微型发光二极管20下落，并由于光致磁性基板400与阵列基板30进行过对位操作，所以光致磁性基板400上所吸附的每一个微型发光二极管20都能对应落在阵列基板30的相应像素位上，从而完成转移。\n\n[0057]本发明实施例中所提供的微型发光二极管转移设备10，其在能过在常温状态下进行巨量转移并有效释放，避免常规激光剥离方法对转移基板430及微型发光二极管20造成的热损伤，提高了设备部件的使用寿命，转移基板430也能够重复使用，降低生产成本，且该设备的转移方法操作流程简单，易操作，能够有效提高转移效率。\n\n[0058]虽然在本文中参照了特定的实施方式来描述本发明，但是应该理解的是，这些实施例仅仅是本发明的原理和应用的示例。因此应该理解的是，可以对示例性的实施例进行许多修改，并且可以设计出其他的布置，只要不偏离所附权利要求所限定的本发明的精神和范围。应该理解的是，可以通过不同于原始权利要求所描述的方式来结合不同的从属权利要求和本文中所述的特征。还可以理解的是，结合单独实施例所描述的特征可以使用在其他所述实施例中。');
INSERT INTO `os_patent_instruction_text` VALUES (10891, 23945, '技术领域\n\n[0001]本申请涉及半导体技术领域，特别涉及一种磁吸式MicroLED巨量转移结构及方法。\n\n背景技术\n\n[0002]Micro-LED(微型发光二极管)发展成未来显示技术的热点之一，和目前的LCD(液晶显示器)、OLED(有机发光半导体显示器)件相比，具有反应快、高色域、高像素数目、低能耗等优势；但其技术难点多且技术复杂，特别是其关键技术巨量转移技术。\n\n[0003]巨量转移要求是把微米级别的、几十万甚至上百万的LED(发光二极管)晶圆芯片精确地从施主晶圆上分裂出来有序地转移至目标基板上。目前的转移方式主要有范德华力、静电吸附、激光烧蚀、流体装配等方式，但存在工艺复杂、定位不精确的问题。\n\n发明内容\n\n[0004]本申请实施例提供一种磁吸式MicroLED巨量转移结构及方法，用于解决现有技术中存在的MicroLED巨量转移工艺复杂、定位不精确的问题。\n\n[0005]本申请实施例提供一种磁吸式MicroLED巨量转移结构，包括：\n\n[0006]基底，所述基底的一面上制备有LED芯片阵列，所述LED芯片阵列的每个电极上设置有第一导电粘接剂层和第一软磁材料层；以及\n\n[0007]目标电路基板，所述目标电路基板的一面上设置有第二导电粘接剂层阵列和第二软磁材料层阵列；\n\n[0008]所述第一导电粘接剂层与第二导电粘接剂层一一对应，所述第一软磁材料层与第二软磁材料层一一对应，所述LED芯片阵列和所述目标电路基板可通过所述第一导电粘接剂层和第二导电粘接剂层利用热压工艺进行绑定连接；\n\n[0009]所述第一软磁材料层和第二软磁材料层的居里温度低于所述热压工艺的加热温度。\n\n[0010]进一步地，所述目标电路基板的一面上设置有焊盘阵列，所述第二导电粘接剂层阵列和第二软磁材料层阵列分别设置在所述焊盘阵列上。\n\n[0011]进一步地，所述第一软磁材料层叠置在所述电极上，所述第一导电粘接剂层叠置在所述电极上并包裹所述第一软磁材料层；\n\n[0012]所述第二软磁材料层叠置在所述焊盘上，所述第二导电粘接剂层叠置在所述焊盘上并包裹所述第二软磁材料层。\n\n[0013]进一步地，所述第一导电粘接剂层和第二导电粘接剂层的材质均为锡。\n\n[0014]进一步地，所述第一软磁材料层和第二软磁材料层的居里温度均低于锡的熔点。\n\n[0015]进一步地，所述第一软磁材料层和第二软磁材料层的居里温度均低于230℃。\n\n[0016]进一步地，所述第一软磁材料层和第二软磁材料层的材质为铁硅合金或软磁铁氧体。\n\n[0017]进一步地，LED芯片的尺寸为1～30微米。\n\n[0018]本申请实施例还提供一种磁吸式MicroLED巨量转移方法，采用上述磁吸式MicroLED巨量转移结构，该方法包括下述步骤：\n\n[0019]S10、将所述基底与目标电路基板上下间隔设置，使所述第一导电粘接剂层和第一软磁材料层分别与所述第二导电粘接剂层和第二软磁材层一一正对；\n\n[0020]S20、施加磁场使所有所述第一软磁材料层和第二软磁材层磁化，同时相邻的第一软磁材料层磁性相反，相邻的第二软磁材料层磁性相反，正对的第一软磁材料层和第二软磁材层磁性相反；\n\n[0021]S30、激光照射所述基底和LED芯片阵列，使所有LED芯片从所述基底剥离；\n\n[0022]S40、在第一软磁材料层和第二软磁材层磁力的作用下，正对的第一导电粘接剂层和第二导电粘接剂层分别对准连接；\n\n[0023]S50、移去电场，采用热压工艺使正对的第一导电粘接剂层和第二导电粘接剂层分别绑定连接，同时在热压工艺的加热作用下，第一软磁材料层和第二软磁材料层的温度达到居里温度，第一软磁材料层和第二软磁材料层的磁性消失；\n\n[0024]S60、MicroLED巨量转移完成。\n\n[0025]进一步地，所述步骤S20中，在所述基底的另一面给每两列第一软磁材料层中间提供第一电流，在所述目标电路基板的另一面给每两列第二软磁材料层中间提供第二电流，所述第一电流和第二电流的方向相反，由电磁效应产生磁场使所有所述第一软磁材料层和第二软磁材层磁化，同时相邻的第一软磁材料层磁性相反，相邻的第二软磁材料层磁性相反，正对的第一软磁材料层和第二软磁材层磁性相反。\n\n[0026]本申请实施例的磁吸式MicroLED巨量转移结构通过在基底的LED芯片阵列的电极上设置第一导电粘接剂层和第一软磁材料层，在目标电路基板上设置有第二导电粘接剂层阵列和第二软磁材料层阵列，同时第一导电粘接剂层和第一软磁材料层分别与第二导电粘接剂层和第二软磁材料层一一对应，第一软磁材料层和第二软磁材料层的居里温度低于将LED芯片阵列和目标电路基板进行绑定的热压工艺的加热温度；该结构进行巨量转移时，在磁场的作用下，由于软磁材料具有在外界磁场易磁化且矫顽力低的特点，能够实现第一导电粘接剂层和第二导电粘接剂层的精确对准连接，使得MicroLED巨量转移的定位精确；同时，由于软磁材料具有高磁导率的特点，采用热压工艺对LED芯片阵列和目标电路基板进行绑定时，第一软磁材料层和第二软磁材料层被加热使其温度超过居里温度，从而自动去磁，去磁后对通电电路无影响。本申请实施例的MicroLED巨量转移工艺简单易行，能够完成巨量转移释放需求。\n\n附图说明\n\n[0027]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0028]图1为本申请实施例提供的磁吸式MicroLED巨量转移结构的结构示意图。\n\n[0029]图2为本申请实施例提供的磁吸式MicroLED巨量转移方法的流程图。\n\n[0030]图3为本申请实施例提供的磁吸式MicroLED巨量转移结构施加外电场后的示意图。\n\n[0031]图4为本申请实施例提供的LED芯片从基底剥离的示意图。\n\n[0032]图5为本申请实施例提供的LED芯片与目标电路基板对准的示意图。\n\n[0033]图6为本申请实施例提供的LED芯片与目标电路基板绑定连接的示意图。\n\n[0034]图7为本申请实施例提供的MicroLED巨量转移完成后的示意图。\n\n具体实施方式\n\n[0035]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0036]在本发明实施例的描述中，需要理解的是，术语“上”、“下”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解对本发明的限制。在本发明的描述中，诸如“第一”、“第二”、等术语仅用于区分类似的对象，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。\n\n[0037]请参阅图1，图1为本申请实施例提供的磁吸式MicroLED巨量转移结构的结构示意图。本实施例中，磁吸式MicroLED巨量转移结构包括：基底10和目标电路基板60。基底10用于制备LED芯片阵列，基底10可以为蓝宝石基底或其他合适材质的基底，制备方法可以采用化学气相沉淀法或其他方法，本申请实施例对此不作限制。目标电路基板60为LED的驱动电路板的基板。\n\n[0038]基底10的一面上制备有LED芯片20阵列，LED芯片20阵列的每个电极30上设置有第一导电粘接剂层40和第一软磁材料层50，每个LED芯片20包括两个电极，即N型电极和P型电极。目标电路基板60的一面上设置有第二导电粘接剂层80阵列和第二软磁材料层90阵列。第一导电粘接剂层40与第二导电粘接剂层80分别一一对应，第一软磁材料层50与第二软磁材料层90分别一一对应。\n\n[0039]LED芯片20阵列和目标电路基板60可通过第一导电粘接剂层40和第二导电粘接剂层80利用热压工艺进行绑定连接。在热压工艺下，第一导电粘接剂层40和第二导电粘接剂层80可以被加热成熔融状态，从而使第一导电粘接剂层40和第二导电粘接剂层80能够被挤压粘连在一起，冷却后第一导电粘接剂层40和第二导电粘接剂层80固化连接，使得LED芯片20阵列和目标电路基板60绑定连接在一起，以实现LED芯片20阵列与目标电路基板60的机械、电气连接。\n\n[0040]第一软磁材料层50和第二软磁材料层90的居里温度低于热压工艺的加热温度。软磁材料指的是当磁化发生在矫顽力Hc不大于1000A/m(安培/米)，易磁化和易去磁这样的材料称为软磁体，典型的软磁材料，可以用最小的外磁场实现最大的磁化强度。居里温度(Curie temperature，Tc)是指磁性材料中自发磁化强度降到零时的温度，是铁磁性或亚铁磁性物质转变成顺磁性物质的临界点，软磁材料在高于居里温度的条件下能够自动去磁。因此，第一软磁材料层50和第二软磁材料层90可以在外界磁场作用下磁化而具有磁力，可用于LED芯片20阵列与目标电路基板60的定位，LED芯片20阵列与目标电路基板60的定位好后在利用热压工艺绑定连接时，第一软磁材料层50和第二软磁材料层90被加热而超过居里温度，使得第一软磁材料层50和第二软磁材料层90能够自动去磁，去磁后对驱动电路板的通电电路不会产生影响。\n\n[0041]在一些实施例中，目标电路基板60的一面上设置有焊盘70阵列，第二导电粘接剂层80阵列和第二软磁材料层90阵列分别设置在焊盘70阵列上。焊盘70阵列便于在目标电路基板60设置第二导电粘接剂层80阵列和第二软磁材料层90阵列，如第二导电粘接剂层80阵列和第二软磁材料层90阵列可以镀在焊盘70阵列上。\n\n[0042]在一些实施例中，第一软磁材料层50叠置在电极30上，第一导电粘接剂层40叠置在电极30上并包裹第一软磁材料层50，如第一导电粘接剂层40和第一软磁材料层50可以分别镀在电极30上。第二软磁材料层90叠置在焊盘70上，第二导电粘接剂层80叠置在焊盘70上并包裹第二软磁材料层90。该结构使得软磁材料阵列规格小于导电粘接剂层规格，确保目标电路基板60与LED芯片20绑定连接的电阻率满足需求。\n\n[0043]在一些实施例中，第一导电粘接剂层40和第二导电粘接剂层80的材质为锡。锡为常用的导电粘接剂，高温下能够熔融粘接，冷却后固化强度好，导电性能好适于电路元件的绑定连接。在替代的实施例中，也可以选取其他合适的材料作为导电粘接剂层的材质，本申请实施例对此不作限制。\n\n[0044]在一些实施例中，第一软磁材料层40和第二软磁材料层80的居里温度低于锡的熔点，因此可以尽量减小热压工艺的加热温度，节省能源。进一步，第一软磁材料层40和第二软磁材料层80的居里温度低于230℃。\n\n[0045]在一些实施例中，第一软磁材料层40和第二软磁材料层80的材质为铁硅合金或软磁铁氧体。铁硅合金或软磁铁氧体是典型的的软磁材料，易于磁化，也易于退磁，广泛用于电工设备和电子设备中。在替代的实施例中，也可以选取其他合适的材料作为软磁材料，本申请实施例对此不作限制。\n\n[0046]在一些实施例中，LED芯片的尺寸为1～30微米。在替代的实施例中，也可以选取其他合适的LED芯片尺寸，本申请实施例对此不作限制。\n\n[0047]请参阅图2，图2为本申请实施例提供的磁吸式MicroLED巨量转移方法的流程图。本实施例中，该方法采用上述磁吸式MicroLED巨量转移结构，包括下述步骤：\n\n[0048]S10、将基底10与目标电路基板60，使第一导电粘接剂层40和第一软磁材料层50分别与第二导电粘接剂层80和第二软磁材层90一一正对。\n\n[0049]通过设置基底10与目标电路基板60上下间隔设置的相对位置，同时第一导电粘接剂层40和第一软磁材料层50分别与第二导电粘接剂层80和第二软磁材层90一一正对，便于LED芯片20阵列从基底10剥离后，LED芯片20在重力的作用下下落，第一导电粘接剂层40在正对第二导电粘接剂层80的方向上运动，同时在磁化的第一软磁材料层50和第二软磁材层90的磁吸力作用下，第一导电粘接剂层40和第二导电粘接剂层80准确定位相连。\n\n[0050]S20、施加磁场使所有第一软磁材料层50和第二软磁材层90磁化，同时相邻的第一软磁材料层50磁性相反，相邻的第二软磁材料层90磁性相反，正对的第一软磁材料层50和第二软磁材层90磁性相反。\n\n[0051]请参阅图3，图3为本申请实施例提供的磁吸式MicroLED巨量转移结构施加外电场后的示意图。本实施例中，在基底10的另一面给每两列第一软磁材料层50中间提供第一电流100，在目标电路基板60的另一面给每两列第二软磁材料层90中间提供第二电流110，第一电流100和第二电流110的方向相反。\n\n[0052]由电磁效应产生磁场使所有第一软磁材料层50和第二软磁材层90磁化，同时相邻的第一软磁材料层50磁性相反，如一个电极30上的第一软磁材料层50的磁性为S极，相邻另一个电极30上的第一软磁材料层50的磁性为N极，或者一个电极30上的第一软磁材料层50的磁性为N极，相邻另一个电极30上的第一软磁材料层50的磁性为S极。相邻的第二软磁材料层90磁性相反，如一个第二软磁材料层90的磁性为S极，相邻另一个第二软磁材料层90的磁性为N极，或者一个第二软磁材料层90的磁性为N极，相邻另一个第二软磁材料层90的磁性为S极。正对的第一软磁材料层50和第二软磁材层90磁性相反，如其中一个第以软磁材料层50的磁性为S极，另一个第二软磁材料层90的磁性为N极，或者其中一个第以软磁材料层50的磁性为N极，另一个第二软磁材料层90的磁性为S极。\n\n[0053]在上述第一电流100和第二电流110对第一软磁材料层50和第二软磁材层90磁化作用下，由于正对的LED芯片的第一软磁材料层50和目标电路基板60的第二软磁材料层90的磁性相反，第一软磁材料层50和第二软磁材料层90在磁场的作用下可以精确的磁吸，从而保证第一导电粘接剂层40和第二导电粘接剂层80准确定位相连。\n\n[0054]应当理解的是，还可以采用其他合适的方式来施加磁场使所有第一软磁材料层50和第二软磁材层90磁化，只要能够保证相邻的第一软磁材料层50磁性相反，相邻的第二软磁材料层90磁性相反，正对的第一软磁材料层50和第二软磁材层90磁性相反，从而使得第一软磁材料层50和第二软磁材料层90可以精确的磁吸，实现第一导电粘接剂层40和第二导电粘接剂层80准确定位相连即可，本申请实施例对此不作限制。\n\n[0055]S30、激光120照射基底10和LED芯片20阵列，使所有LED芯片20从基底10剥离。\n\n[0056]请参阅图4，图4为本申请实施例提供的LED芯片从基底剥离的示意图。本实施例中，激光120照射基底10和LED芯片20阵列后，基底10和LED芯片20界面的粘性强度显著降低，LED芯片20在重力和磁力的作用下从基底10上剥离下来。\n\n[0057]S40、在第一软磁材料层50和第二软磁材层90磁力的作用下，正对的第一导电粘接剂层40和第二导电粘接剂层90分别对准连接。\n\n[0058]请参阅图5，图5为本申请实施例提供的LED芯片与目标电路基板对准的示意图。本实施例中，由于正对的LED芯片的第一软磁材料层50和目标电路基板60的第二软磁材料层90的磁性相反，第一软磁材料层50和第二软磁材料层90在磁场B的作用下可以精确的磁吸，从而保证第一导电粘接剂层40和第二导电粘接剂层80准确定位相连，使得MicroLED巨量转移的定位精确。\n\n[0059]S50、移去电场，采用热压工艺使正对的第一导电粘接剂层40和第二导电粘接剂层80分别绑定连接，同时在热压工艺的加热作用下，第一软磁材料层50和第二软磁材料层90的温度达到居里温度，第一软磁材料层50和第二软磁材料层90的磁性消失。\n\n[0060]请参阅图6，图6为本申请实施例提供的LED芯片与目标电路基板绑定连接的示意图。为了实现LED芯片20阵列与目标电路基板60的机械、电气连接，需要采用热压工艺将LED芯片20阵列的第一导电粘接剂层40和目标电路基板60第二导电粘接剂层80绑定连接在一起，在热压工艺的加热下，第一导电粘接剂层40和第二导电粘接剂层80可以被加热成熔融状态，从而使第一导电粘接剂层40和第二导电粘接剂层80能够被挤压粘连在一起，冷却后第一导电粘接剂层40和第二导电粘接剂层80固化连接。在热压工艺的加热作用下，第一软磁材料层50和第二软磁材料层90也同时被加热，由于第一软磁材料层50和第二软磁材料层90的居里温度低于热压工艺的加热温度，因此它们被加热而温度达到居里温度，第一软磁材料层50和第二软磁材料层90的磁性消失，第一软磁材料层50和第二软磁材料层90不产生磁场B，去磁后对通电电路无影响。\n\n[0061]S60、MicroLED巨量转移完成。\n\n[0062]请参阅图7，图7为本申请实施例提供的MicroLED巨量转移完成后的示意图。本实施例中，MicroLED巨量转移完成后，第一导电粘接剂层40和第二导电粘接剂层80混合粘接在一起，LED芯片20阵列与目标电路基板60准确定位并且实现机械、电气连接。\n\n[0063]本申请通过在基底的LED芯片阵列的电极上设置第一导电粘接剂层和第一软磁材料层，在目标电路基板上设置有第二导电粘接剂层阵列和第二软磁材料层阵列，同时第一导电粘接剂层和第一软磁材料层分别与第二导电粘接剂层和第二软磁材料层一一对应，第一软磁材料层和第二软磁材料层的居里温度低于将LED芯片阵列和目标电路基板进行绑定的热压工艺的加热温度；该结构进行巨量转移时，在磁场的作用下，由于软磁材料具有在外界磁场易磁化且矫顽力低的特点，能够实现第一导电粘接剂层和第二导电粘接剂层的精确对准连接，使得MicroLED巨量转移的定位精确；同时，由于软磁材料具有高磁导率的特点，采用热压工艺对LED芯片阵列和目标电路基板进行绑定时，第一软磁材料层和第二软磁材料层被加热使其温度超过居里温度，从而自动去磁，去磁后对通电电路无影响。本申请实施例的MicroLED巨量转移工艺简单易行，能够完成巨量转移释放需求。\n\n[0064]以上对本申请实施例提供的磁吸式MicroLED巨量转移结构及方法进行了详细介绍。本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及半导体技术领域，特别涉及一种磁吸式MicroLED巨量转移结构及方法。\n\n背景技术\n\n[0002]Micro-LED(微型发光二极管)发展成未来显示技术的热点之一，和目前的LCD(液晶显示器)、OLED(有机发光半导体显示器)件相比，具有反应快、高色域、高像素数目、低能耗等优势；但其技术难点多且技术复杂，特别是其关键技术巨量转移技术。\n\n[0003]巨量转移要求是把微米级别的、几十万甚至上百万的LED(发光二极管)晶圆芯片精确地从施主晶圆上分裂出来有序地转移至目标基板上。目前的转移方式主要有范德华力、静电吸附、激光烧蚀、流体装配等方式，但存在工艺复杂、定位不精确的问题。\n\n发明内容\n\n[0004]本申请实施例提供一种磁吸式MicroLED巨量转移结构及方法，用于解决现有技术中存在的MicroLED巨量转移工艺复杂、定位不精确的问题。\n\n[0005]本申请实施例提供一种磁吸式MicroLED巨量转移结构，包括：\n\n[0006]基底，所述基底的一面上制备有LED芯片阵列，所述LED芯片阵列的每个电极上设置有第一导电粘接剂层和第一软磁材料层；以及\n\n[0007]目标电路基板，所述目标电路基板的一面上设置有第二导电粘接剂层阵列和第二软磁材料层阵列；\n\n[0008]所述第一导电粘接剂层与第二导电粘接剂层一一对应，所述第一软磁材料层与第二软磁材料层一一对应，所述LED芯片阵列和所述目标电路基板可通过所述第一导电粘接剂层和第二导电粘接剂层利用热压工艺进行绑定连接；\n\n[0009]所述第一软磁材料层和第二软磁材料层的居里温度低于所述热压工艺的加热温度。\n\n[0010]进一步地，所述目标电路基板的一面上设置有焊盘阵列，所述第二导电粘接剂层阵列和第二软磁材料层阵列分别设置在所述焊盘阵列上。\n\n[0011]进一步地，所述第一软磁材料层叠置在所述电极上，所述第一导电粘接剂层叠置在所述电极上并包裹所述第一软磁材料层；\n\n[0012]所述第二软磁材料层叠置在所述焊盘上，所述第二导电粘接剂层叠置在所述焊盘上并包裹所述第二软磁材料层。\n\n[0013]进一步地，所述第一导电粘接剂层和第二导电粘接剂层的材质均为锡。\n\n[0014]进一步地，所述第一软磁材料层和第二软磁材料层的居里温度均低于锡的熔点。\n\n[0015]进一步地，所述第一软磁材料层和第二软磁材料层的居里温度均低于230℃。\n\n[0016]进一步地，所述第一软磁材料层和第二软磁材料层的材质为铁硅合金或软磁铁氧体。\n\n[0017]进一步地，LED芯片的尺寸为1～30微米。\n\n[0018]本申请实施例还提供一种磁吸式MicroLED巨量转移方法，采用上述磁吸式MicroLED巨量转移结构，该方法包括下述步骤：\n\n[0019]S10、将所述基底与目标电路基板上下间隔设置，使所述第一导电粘接剂层和第一软磁材料层分别与所述第二导电粘接剂层和第二软磁材层一一正对；\n\n[0020]S20、施加磁场使所有所述第一软磁材料层和第二软磁材层磁化，同时相邻的第一软磁材料层磁性相反，相邻的第二软磁材料层磁性相反，正对的第一软磁材料层和第二软磁材层磁性相反；\n\n[0021]S30、激光照射所述基底和LED芯片阵列，使所有LED芯片从所述基底剥离；\n\n[0022]S40、在第一软磁材料层和第二软磁材层磁力的作用下，正对的第一导电粘接剂层和第二导电粘接剂层分别对准连接；\n\n[0023]S50、移去电场，采用热压工艺使正对的第一导电粘接剂层和第二导电粘接剂层分别绑定连接，同时在热压工艺的加热作用下，第一软磁材料层和第二软磁材料层的温度达到居里温度，第一软磁材料层和第二软磁材料层的磁性消失；\n\n[0024]S60、MicroLED巨量转移完成。\n\n[0025]进一步地，所述步骤S20中，在所述基底的另一面给每两列第一软磁材料层中间提供第一电流，在所述目标电路基板的另一面给每两列第二软磁材料层中间提供第二电流，所述第一电流和第二电流的方向相反，由电磁效应产生磁场使所有所述第一软磁材料层和第二软磁材层磁化，同时相邻的第一软磁材料层磁性相反，相邻的第二软磁材料层磁性相反，正对的第一软磁材料层和第二软磁材层磁性相反。\n\n[0026]本申请实施例的磁吸式MicroLED巨量转移结构通过在基底的LED芯片阵列的电极上设置第一导电粘接剂层和第一软磁材料层，在目标电路基板上设置有第二导电粘接剂层阵列和第二软磁材料层阵列，同时第一导电粘接剂层和第一软磁材料层分别与第二导电粘接剂层和第二软磁材料层一一对应，第一软磁材料层和第二软磁材料层的居里温度低于将LED芯片阵列和目标电路基板进行绑定的热压工艺的加热温度；该结构进行巨量转移时，在磁场的作用下，由于软磁材料具有在外界磁场易磁化且矫顽力低的特点，能够实现第一导电粘接剂层和第二导电粘接剂层的精确对准连接，使得MicroLED巨量转移的定位精确；同时，由于软磁材料具有高磁导率的特点，采用热压工艺对LED芯片阵列和目标电路基板进行绑定时，第一软磁材料层和第二软磁材料层被加热使其温度超过居里温度，从而自动去磁，去磁后对通电电路无影响。本申请实施例的MicroLED巨量转移工艺简单易行，能够完成巨量转移释放需求。\n\n附图说明\n\n[0027]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0028]图1为本申请实施例提供的磁吸式MicroLED巨量转移结构的结构示意图。\n\n[0029]图2为本申请实施例提供的磁吸式MicroLED巨量转移方法的流程图。\n\n[0030]图3为本申请实施例提供的磁吸式MicroLED巨量转移结构施加外电场后的示意图。\n\n[0031]图4为本申请实施例提供的LED芯片从基底剥离的示意图。\n\n[0032]图5为本申请实施例提供的LED芯片与目标电路基板对准的示意图。\n\n[0033]图6为本申请实施例提供的LED芯片与目标电路基板绑定连接的示意图。\n\n[0034]图7为本申请实施例提供的MicroLED巨量转移完成后的示意图。\n\n具体实施方式\n\n[0035]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0036]在本发明实施例的描述中，需要理解的是，术语“上”、“下”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解对本发明的限制。在本发明的描述中，诸如“第一”、“第二”、等术语仅用于区分类似的对象，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。\n\n[0037]请参阅图1，图1为本申请实施例提供的磁吸式MicroLED巨量转移结构的结构示意图。本实施例中，磁吸式MicroLED巨量转移结构包括：基底10和目标电路基板60。基底10用于制备LED芯片阵列，基底10可以为蓝宝石基底或其他合适材质的基底，制备方法可以采用化学气相沉淀法或其他方法，本申请实施例对此不作限制。目标电路基板60为LED的驱动电路板的基板。\n\n[0038]基底10的一面上制备有LED芯片20阵列，LED芯片20阵列的每个电极30上设置有第一导电粘接剂层40和第一软磁材料层50，每个LED芯片20包括两个电极，即N型电极和P型电极。目标电路基板60的一面上设置有第二导电粘接剂层80阵列和第二软磁材料层90阵列。第一导电粘接剂层40与第二导电粘接剂层80分别一一对应，第一软磁材料层50与第二软磁材料层90分别一一对应。\n\n[0039]LED芯片20阵列和目标电路基板60可通过第一导电粘接剂层40和第二导电粘接剂层80利用热压工艺进行绑定连接。在热压工艺下，第一导电粘接剂层40和第二导电粘接剂层80可以被加热成熔融状态，从而使第一导电粘接剂层40和第二导电粘接剂层80能够被挤压粘连在一起，冷却后第一导电粘接剂层40和第二导电粘接剂层80固化连接，使得LED芯片20阵列和目标电路基板60绑定连接在一起，以实现LED芯片20阵列与目标电路基板60的机械、电气连接。\n\n[0040]第一软磁材料层50和第二软磁材料层90的居里温度低于热压工艺的加热温度。软磁材料指的是当磁化发生在矫顽力Hc不大于1000A/m(安培/米)，易磁化和易去磁这样的材料称为软磁体，典型的软磁材料，可以用最小的外磁场实现最大的磁化强度。居里温度(Curie temperature，Tc)是指磁性材料中自发磁化强度降到零时的温度，是铁磁性或亚铁磁性物质转变成顺磁性物质的临界点，软磁材料在高于居里温度的条件下能够自动去磁。因此，第一软磁材料层50和第二软磁材料层90可以在外界磁场作用下磁化而具有磁力，可用于LED芯片20阵列与目标电路基板60的定位，LED芯片20阵列与目标电路基板60的定位好后在利用热压工艺绑定连接时，第一软磁材料层50和第二软磁材料层90被加热而超过居里温度，使得第一软磁材料层50和第二软磁材料层90能够自动去磁，去磁后对驱动电路板的通电电路不会产生影响。\n\n[0041]在一些实施例中，目标电路基板60的一面上设置有焊盘70阵列，第二导电粘接剂层80阵列和第二软磁材料层90阵列分别设置在焊盘70阵列上。焊盘70阵列便于在目标电路基板60设置第二导电粘接剂层80阵列和第二软磁材料层90阵列，如第二导电粘接剂层80阵列和第二软磁材料层90阵列可以镀在焊盘70阵列上。\n\n[0042]在一些实施例中，第一软磁材料层50叠置在电极30上，第一导电粘接剂层40叠置在电极30上并包裹第一软磁材料层50，如第一导电粘接剂层40和第一软磁材料层50可以分别镀在电极30上。第二软磁材料层90叠置在焊盘70上，第二导电粘接剂层80叠置在焊盘70上并包裹第二软磁材料层90。该结构使得软磁材料阵列规格小于导电粘接剂层规格，确保目标电路基板60与LED芯片20绑定连接的电阻率满足需求。\n\n[0043]在一些实施例中，第一导电粘接剂层40和第二导电粘接剂层80的材质为锡。锡为常用的导电粘接剂，高温下能够熔融粘接，冷却后固化强度好，导电性能好适于电路元件的绑定连接。在替代的实施例中，也可以选取其他合适的材料作为导电粘接剂层的材质，本申请实施例对此不作限制。\n\n[0044]在一些实施例中，第一软磁材料层40和第二软磁材料层80的居里温度低于锡的熔点，因此可以尽量减小热压工艺的加热温度，节省能源。进一步，第一软磁材料层40和第二软磁材料层80的居里温度低于230℃。\n\n[0045]在一些实施例中，第一软磁材料层40和第二软磁材料层80的材质为铁硅合金或软磁铁氧体。铁硅合金或软磁铁氧体是典型的的软磁材料，易于磁化，也易于退磁，广泛用于电工设备和电子设备中。在替代的实施例中，也可以选取其他合适的材料作为软磁材料，本申请实施例对此不作限制。\n\n[0046]在一些实施例中，LED芯片的尺寸为1～30微米。在替代的实施例中，也可以选取其他合适的LED芯片尺寸，本申请实施例对此不作限制。\n\n[0047]请参阅图2，图2为本申请实施例提供的磁吸式MicroLED巨量转移方法的流程图。本实施例中，该方法采用上述磁吸式MicroLED巨量转移结构，包括下述步骤：\n\n[0048]S10、将基底10与目标电路基板60，使第一导电粘接剂层40和第一软磁材料层50分别与第二导电粘接剂层80和第二软磁材层90一一正对。\n\n[0049]通过设置基底10与目标电路基板60上下间隔设置的相对位置，同时第一导电粘接剂层40和第一软磁材料层50分别与第二导电粘接剂层80和第二软磁材层90一一正对，便于LED芯片20阵列从基底10剥离后，LED芯片20在重力的作用下下落，第一导电粘接剂层40在正对第二导电粘接剂层80的方向上运动，同时在磁化的第一软磁材料层50和第二软磁材层90的磁吸力作用下，第一导电粘接剂层40和第二导电粘接剂层80准确定位相连。\n\n[0050]S20、施加磁场使所有第一软磁材料层50和第二软磁材层90磁化，同时相邻的第一软磁材料层50磁性相反，相邻的第二软磁材料层90磁性相反，正对的第一软磁材料层50和第二软磁材层90磁性相反。\n\n[0051]请参阅图3，图3为本申请实施例提供的磁吸式MicroLED巨量转移结构施加外电场后的示意图。本实施例中，在基底10的另一面给每两列第一软磁材料层50中间提供第一电流100，在目标电路基板60的另一面给每两列第二软磁材料层90中间提供第二电流110，第一电流100和第二电流110的方向相反。\n\n[0052]由电磁效应产生磁场使所有第一软磁材料层50和第二软磁材层90磁化，同时相邻的第一软磁材料层50磁性相反，如一个电极30上的第一软磁材料层50的磁性为S极，相邻另一个电极30上的第一软磁材料层50的磁性为N极，或者一个电极30上的第一软磁材料层50的磁性为N极，相邻另一个电极30上的第一软磁材料层50的磁性为S极。相邻的第二软磁材料层90磁性相反，如一个第二软磁材料层90的磁性为S极，相邻另一个第二软磁材料层90的磁性为N极，或者一个第二软磁材料层90的磁性为N极，相邻另一个第二软磁材料层90的磁性为S极。正对的第一软磁材料层50和第二软磁材层90磁性相反，如其中一个第以软磁材料层50的磁性为S极，另一个第二软磁材料层90的磁性为N极，或者其中一个第以软磁材料层50的磁性为N极，另一个第二软磁材料层90的磁性为S极。\n\n[0053]在上述第一电流100和第二电流110对第一软磁材料层50和第二软磁材层90磁化作用下，由于正对的LED芯片的第一软磁材料层50和目标电路基板60的第二软磁材料层90的磁性相反，第一软磁材料层50和第二软磁材料层90在磁场的作用下可以精确的磁吸，从而保证第一导电粘接剂层40和第二导电粘接剂层80准确定位相连。\n\n[0054]应当理解的是，还可以采用其他合适的方式来施加磁场使所有第一软磁材料层50和第二软磁材层90磁化，只要能够保证相邻的第一软磁材料层50磁性相反，相邻的第二软磁材料层90磁性相反，正对的第一软磁材料层50和第二软磁材层90磁性相反，从而使得第一软磁材料层50和第二软磁材料层90可以精确的磁吸，实现第一导电粘接剂层40和第二导电粘接剂层80准确定位相连即可，本申请实施例对此不作限制。\n\n[0055]S30、激光120照射基底10和LED芯片20阵列，使所有LED芯片20从基底10剥离。\n\n[0056]请参阅图4，图4为本申请实施例提供的LED芯片从基底剥离的示意图。本实施例中，激光120照射基底10和LED芯片20阵列后，基底10和LED芯片20界面的粘性强度显著降低，LED芯片20在重力和磁力的作用下从基底10上剥离下来。\n\n[0057]S40、在第一软磁材料层50和第二软磁材层90磁力的作用下，正对的第一导电粘接剂层40和第二导电粘接剂层90分别对准连接。\n\n[0058]请参阅图5，图5为本申请实施例提供的LED芯片与目标电路基板对准的示意图。本实施例中，由于正对的LED芯片的第一软磁材料层50和目标电路基板60的第二软磁材料层90的磁性相反，第一软磁材料层50和第二软磁材料层90在磁场B的作用下可以精确的磁吸，从而保证第一导电粘接剂层40和第二导电粘接剂层80准确定位相连，使得MicroLED巨量转移的定位精确。\n\n[0059]S50、移去电场，采用热压工艺使正对的第一导电粘接剂层40和第二导电粘接剂层80分别绑定连接，同时在热压工艺的加热作用下，第一软磁材料层50和第二软磁材料层90的温度达到居里温度，第一软磁材料层50和第二软磁材料层90的磁性消失。\n\n[0060]请参阅图6，图6为本申请实施例提供的LED芯片与目标电路基板绑定连接的示意图。为了实现LED芯片20阵列与目标电路基板60的机械、电气连接，需要采用热压工艺将LED芯片20阵列的第一导电粘接剂层40和目标电路基板60第二导电粘接剂层80绑定连接在一起，在热压工艺的加热下，第一导电粘接剂层40和第二导电粘接剂层80可以被加热成熔融状态，从而使第一导电粘接剂层40和第二导电粘接剂层80能够被挤压粘连在一起，冷却后第一导电粘接剂层40和第二导电粘接剂层80固化连接。在热压工艺的加热作用下，第一软磁材料层50和第二软磁材料层90也同时被加热，由于第一软磁材料层50和第二软磁材料层90的居里温度低于热压工艺的加热温度，因此它们被加热而温度达到居里温度，第一软磁材料层50和第二软磁材料层90的磁性消失，第一软磁材料层50和第二软磁材料层90不产生磁场B，去磁后对通电电路无影响。\n\n[0061]S60、MicroLED巨量转移完成。\n\n[0062]请参阅图7，图7为本申请实施例提供的MicroLED巨量转移完成后的示意图。本实施例中，MicroLED巨量转移完成后，第一导电粘接剂层40和第二导电粘接剂层80混合粘接在一起，LED芯片20阵列与目标电路基板60准确定位并且实现机械、电气连接。\n\n[0063]本申请通过在基底的LED芯片阵列的电极上设置第一导电粘接剂层和第一软磁材料层，在目标电路基板上设置有第二导电粘接剂层阵列和第二软磁材料层阵列，同时第一导电粘接剂层和第一软磁材料层分别与第二导电粘接剂层和第二软磁材料层一一对应，第一软磁材料层和第二软磁材料层的居里温度低于将LED芯片阵列和目标电路基板进行绑定的热压工艺的加热温度；该结构进行巨量转移时，在磁场的作用下，由于软磁材料具有在外界磁场易磁化且矫顽力低的特点，能够实现第一导电粘接剂层和第二导电粘接剂层的精确对准连接，使得MicroLED巨量转移的定位精确；同时，由于软磁材料具有高磁导率的特点，采用热压工艺对LED芯片阵列和目标电路基板进行绑定时，第一软磁材料层和第二软磁材料层被加热使其温度超过居里温度，从而自动去磁，去磁后对通电电路无影响。本申请实施例的MicroLED巨量转移工艺简单易行，能够完成巨量转移释放需求。\n\n[0064]以上对本申请实施例提供的磁吸式MicroLED巨量转移结构及方法进行了详细介绍。本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10892, 23946, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种自发光显示装置。\n\n背景技术\n\n[0002]迷你发光二极管(Mini Light Emitting Diode,Mini LED)微发光二极管(MicroLight Emitting Diode,Micro LED)是新一代显示技术，比现有的有机发光二极管(Organic Light-Emitting Diode,OLED)显示技术亮度更高、发光效率更好，然而其功耗较低。众所周知，OLED显示面板上的像素可独立发出光线和色彩，因此每个像素可以单独开启或关闭，从而实现绝对的黑色水平和无限的对比度，Mini LED或Micro LED显示面板同样具备自发光的能力，也能达到OLED显示面板完美的黑色水平和超快的响应时间，同时，MiniLED或Micro LED相比OLED状态更加稳定，红绿蓝像素不会出现寿命衰退的问题，因此MiniLED显示面板或Micro LED显示面板相比OLED显示面板具有更长的使用寿命。\n\n[0003]然而纵使Mini LED或Micro LED在新一代显示领域拥有非常大的潜力，其本质依然是LED的自发光，因此LED技术的固有技术问题—散热问题，依然是Mini LED或Micro LED显示技术所要面临的问题，并且在大尺寸显示面板中，散热所带来的问题更加凸显。\n\n[0004]综上所述，需要提供一种新的自发光显示装置，来解决上述技术问题。\n\n发明内容\n\n[0005]本发明提供的自发光显示装置，解决了现有的自发光显示装置散热性能不佳的技术问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明实施例提供一种自发光显示装置，包括：\n\n[0008]自发光显示面板，包括显示区；以及\n\n[0009]液流散热组件，设置于所述自发光显示面板背部，所述液流散热组件包括：\n\n[0010]液体泵，包括用于散热液体流出的输出口；\n\n[0011]第一管道和第二管道，分别设置于所述自发光显示面板的相对两侧，所述第一管道的一端与所述输出口相连；以及\n\n[0012]散热板，与所述显示区对应设置，通过所述输出口流出的所述散热液体从所述第一管道流经所述散热板后从所述第二管道流出。\n\n[0013]根据本发明实施例提供的自发光显示装置，所述散热板上设置有多个均匀排布的散热翅片。\n\n[0014]根据本发明实施例提供的自发光显示装置，所述散热翅片在所述自发光显示面板上的正投影的形状为矩形或菱形，其中，呈矩形的所述散热翅片的长轴与所述散热板的底面长边之间形成一倾斜角。\n\n[0015]根据本发明实施例提供的自发光显示装置，多个所述散热翅片之间相互交错排布。\n\n[0016]根据本发明实施例提供的自发光显示装置，所述第一管道面向所述散热板的一侧设置有多个均匀排布的第一孔隙，流经所述第一管道的所述散热液体从所述第一孔隙流入至所述散热板中。\n\n[0017]根据本发明实施例提供的自发光显示装置，多个所述第一孔隙的孔径大小沿所述散热液体在所述第一管道中的流动方向均匀递增。\n\n[0018]根据本发明实施例提供的自发光显示装置，所述第二管道面向所述散热板的一侧设置有多个均匀排布的第二孔隙，流经所述散热板的所述散热液体从所述第二孔隙流出所述第二管道。\n\n[0019]根据本发明实施例提供的自发光显示装置，所述液体泵还包括输入口，所述输入口和所述第二管道相连，流经所述散热板的所述散热液体从所述第二管道流出，并通过所述输入口进入所述液体泵。\n\n[0020]根据本发明实施例提供的自发光显示装置，所述散热板和所述自发光显示面板之间设置有粘附层。\n\n[0021]根据本发明实施例提供的自发光显示装置，所述自发光显示面板为Mini LED显示面板和Micro LED显示面板中的任意一种。\n\n[0022]本发明的有益效果为：本发明提供的自发光显示装置，通过在自发光显示面板背后设置液流散热组件，液流散热装置包括液体泵、第一管道、第二管道以及散热板，散热板与自发光显示面板的显示区对应设置，通过液体泵流出的散热液体经过第一管道流经至散热板后从第二管道流出，从而散热板将自发光显示面板传导出来的热量进行吸收后由第二管道排出，完成散热过程，进而大大提高了自发光显示装置的散热性能。\n\n附图说明\n\n[0023]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0024]图1为本发明实施例提供的一种自发光显示装置的立体结构示意图；\n\n[0025]图2为本发明实施例提供的一种液流散热组件的平面结构示意图；\n\n[0026]图3为本发明实施例提供的第一种散热板的结构示意图；\n\n[0027]图4为本发明实施例提供的第二种散热板的结构示意图；\n\n[0028]图5为本发明实施例提供的第三种散热板的结构示意图。\n\n[0029]图6为图3提供的散热板的散热翅片的平面结构示意图；\n\n[0030]图7为图4提供的散热板的散热翅片的平面结构示意图；\n\n[0031]图8为图5提供的散热板的散热翅片的平面结构示意图；\n\n[0032]图9为本发明实施例提供的另一种液流散热组件的平面结构示意图；\n\n[0033]图10为本发明实施例提供的第一管道的结构示意图；\n\n[0034]图11为本发明实施例提供的第二管道的结构示意图。\n\n具体实施方式\n\n[0035]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0036]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0037]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0038]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0039]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0040]本发明针对现有技术的自发光显示装置散热性能不佳，本实施例能够解决该缺陷。\n\n[0041]请参阅图1、图2，本发明实施例提供的自发光显示装置，包括自发光显示面板1以及设置于所述自发光显示面板1背部的液流散热组件2，所述自发光显示面板1包括显示区11，所述显示区11设置有多个可以自发光的发光器件(图中未示出)，所述发光器件可以为Mini LED或Micro LED；所述液流散热组件2包括液体泵21、第一管道22、第二管道23以及散热板24，所述液体泵包括用于散热液体流出的输出口211，其中，所述液流散热组件2为水冷散热组件，所述液体泵21可以为水泵；所述第一管道22和所述第二管道23设置于所述自发光显示面板1的相对两侧，所述第一管道22的一端与所述输出口211相连，所述散热板24与所述显示区11对应设置，用于对位于所述显示区11的所述发光器件进行散热，本发明实施例中，所述散热板24为内部凹陷的长方体结构，其中，所述散热板24与所述第一管道22和所述第二管道23对应设置的侧边未设置有挡墙结构，而其余侧边设置有挡墙结构，以防止所述散热液体从侧部流出。\n\n[0042]本发明实施例通过所述输出口211流出的所述散热液体经过所述第一管道22流经所述散热板24后从所述第二管道23流出，从而所述散热板24将所述自发光显示面板1传导出来的热量进行吸收后由所述第二管道23排出，完成散热过程，进而大大提高了所述自发光显示装置的散热性能。\n\n[0043]具体地，所述散热板24上设置有多个均匀排布的散热翅片241，所述散热液体进入所述散热板24内部后，多个所述散热翅片241对所述散热液体的流动产生了一定阻力，从而提高了所述散热板24的换热能力。\n\n[0044]具体地，请参阅图3、图6，所述散热翅片241在所述自发光显示面板1上的正投影的形状可以为贯穿式长条状，所述散热翅片241的长轴与所述散热板24的底面长边平行，所述散热翅片241的长边长度为40mm，所述散热翅片241的短边长度为1mm，相邻两个所述散热翅片241之间的间隔距离为3mm。\n\n[0045]然而，针对大尺寸自发光显示装置，由于其一方面需要均匀的显示效果，另一方面也需要更为高效均匀的散热效果，因此所述散热板24需要散热效果较好的内部结构，故优选地，请参阅图4、图5，将所述散热翅片241在所述自发光显示面板1上的正投影的形状设计为菱形或矩形，其中，呈矩形的所述散热翅片241的长轴与所述散热板24的底面长边之间形成一倾斜角，由于倾斜的所述散热翅片241能够破坏热边界层的形成，增大换热系数，从而增加换热效果，吸收所述自发光显示面板1产生的更多热量，从而大大提高了所述发光器件的散热性能。\n\n[0046]具体地，呈矩形的所述散热翅片241的长轴与所述散热板24的底面长边之间形成的所述倾斜角可以为20°～60°，优选地，呈矩形的所述散热翅片241的长轴与所述散热板24的底面长边之间形成的所述倾斜角为30°。\n\n[0047]例如，请参阅图7，当所述散热翅片241在所述自发光显示面板1上的正投影的形状为菱形时，每一所述散热翅片241的侧边边长为2mm，相对的两条侧边之间的垂直距离为4mm，位于同一行的两个所述散热翅片241之间的距离为4mm，位于同一列的两个所述散热翅片241之间的距离为4mm；再如，请参阅图8，当所述散热翅片241在所述自发光显示面板1上的正投影的形状为矩形时，每一所述散热翅片241的长边长度为4mm，长边与水平方向之间的夹角为30°，位于同一行的两个所述散热翅片241之间的距离为4mm，位于同一列的两个所述散热翅片241之间的距离为4mm。\n\n[0048]优选地，请参阅图9，多个所述散热翅片241之间相互交错排布，同样地，由于交错排布的所述散热翅片241同样能够破坏热边界层的形成，增大换热系数，从而能够增加换热效果，吸收所述自发光显示面板1产生的更多热量，从而大大提高了所述发光器件的散热性能。\n\n[0049]具体地，请参阅图10，所述第一管道22面向所述散热板24的一侧设置有多个均匀排布的第一孔隙221，流经所述第一管道22的所述散热液体从所述第一孔隙221流入至所述散热板24中，具体地，多个所述第一孔隙221的孔径大小沿所述散热液体在所述第一管道22中的流动方向均匀递增，即靠近所述散热液体流入所述第一管道22的一端的所述第一孔隙221的孔径，小于远离所述散热液体流入所述第一管道22的一端，如此设置能够使得所述散热液体流量在所述散热板内均匀分布，从而提高所述自发光显示面板1在其各个位置处的温度的均一性，进而达到均匀出光的目的。\n\n[0050]同样地，请参阅图11，所述第二管道23面向所述散热板24的一侧设置有多个均匀排布的第二孔隙231，流经所述散热板24的所述散热液体从所述第二孔隙231流出所述第二管道23，所述第二孔隙231与所述第一孔隙221的不同之处在于，多个所述第二孔隙231的孔径大小均相等，从而使得流经所述散热板的所述散热液体从所述第二孔隙231均匀流出，以进一步提高所述自发光显示面板1在其各个位置处的温度的均一性。\n\n[0051]进一步地，请继续参阅图1、图9，所述液体泵还包括输入口212，所述输入口212和所述第二管道23相连，流经所述散热板24的所述散热液体从所述第二管道23流出，并通过所述输入口212进入所述液体泵21，使得液体泵21-第一管道22-散热板24-第二管道23-液体泵21组成的所述液流散热组件2形成一循环散热系统，从而使得所述散热液体可循环利用，简化步骤的同时可以节约成本，此外，所述液体泵21内部还应设置一冷却装置(图中未示出)，对从所述第二管道23流出的所述散热液体进行冷却处理，避免对所述自发光显示面板1即将进行的下一降温过程产生影响。\n\n[0052]具体地，所述散热板24和所述自发光显示面板1之间设置有粘附层，用于将所述散热板24贴附在所述自发光显示面板1背部，其中，所述粘附层的材料可以为双面胶。\n\n[0053]在本发明实施例中，所述自发光显示面板1可以为Mini LED显示面板和Micro LED显示面板中的任意一种，由于Mini LED显示面板和Micro LED显示面板上的发光器件的散热性能不佳，因此在所述Mini LED显示面板或Micro LED显示面板背后设置有所述液流散热组件2，能够有效达到均匀散热的目的。\n\n[0054]有益效果为：本发明实施例提供的自发光显示装置，通过在自发光显示面板背后设置液流散热组件，液流散热装置包括液体泵、第一管道、第二管道以及散热板，散热板与自发光显示面板的显示区对应设置，通过液体泵流出的散热液体经过第一管道流经至散热板后从第二管道流出，从而散热板将自发光显示面板传导出来的热量进行吸收后由第二管道排出，完成散热过程，进而大大提高了自发光显示装置的散热性能。\n\n[0055]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种自发光显示装置。\n\n背景技术\n\n[0002]迷你发光二极管(Mini Light Emitting Diode,Mini LED)微发光二极管(MicroLight Emitting Diode,Micro LED)是新一代显示技术，比现有的有机发光二极管(Organic Light-Emitting Diode,OLED)显示技术亮度更高、发光效率更好，然而其功耗较低。众所周知，OLED显示面板上的像素可独立发出光线和色彩，因此每个像素可以单独开启或关闭，从而实现绝对的黑色水平和无限的对比度，Mini LED或Micro LED显示面板同样具备自发光的能力，也能达到OLED显示面板完美的黑色水平和超快的响应时间，同时，MiniLED或Micro LED相比OLED状态更加稳定，红绿蓝像素不会出现寿命衰退的问题，因此MiniLED显示面板或Micro LED显示面板相比OLED显示面板具有更长的使用寿命。\n\n[0003]然而纵使Mini LED或Micro LED在新一代显示领域拥有非常大的潜力，其本质依然是LED的自发光，因此LED技术的固有技术问题—散热问题，依然是Mini LED或Micro LED显示技术所要面临的问题，并且在大尺寸显示面板中，散热所带来的问题更加凸显。\n\n[0004]综上所述，需要提供一种新的自发光显示装置，来解决上述技术问题。\n\n发明内容\n\n[0005]本发明提供的自发光显示装置，解决了现有的自发光显示装置散热性能不佳的技术问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明实施例提供一种自发光显示装置，包括：\n\n[0008]自发光显示面板，包括显示区；以及\n\n[0009]液流散热组件，设置于所述自发光显示面板背部，所述液流散热组件包括：\n\n[0010]液体泵，包括用于散热液体流出的输出口；\n\n[0011]第一管道和第二管道，分别设置于所述自发光显示面板的相对两侧，所述第一管道的一端与所述输出口相连；以及\n\n[0012]散热板，与所述显示区对应设置，通过所述输出口流出的所述散热液体从所述第一管道流经所述散热板后从所述第二管道流出。\n\n[0013]根据本发明实施例提供的自发光显示装置，所述散热板上设置有多个均匀排布的散热翅片。\n\n[0014]根据本发明实施例提供的自发光显示装置，所述散热翅片在所述自发光显示面板上的正投影的形状为矩形或菱形，其中，呈矩形的所述散热翅片的长轴与所述散热板的底面长边之间形成一倾斜角。\n\n[0015]根据本发明实施例提供的自发光显示装置，多个所述散热翅片之间相互交错排布。\n\n[0016]根据本发明实施例提供的自发光显示装置，所述第一管道面向所述散热板的一侧设置有多个均匀排布的第一孔隙，流经所述第一管道的所述散热液体从所述第一孔隙流入至所述散热板中。\n\n[0017]根据本发明实施例提供的自发光显示装置，多个所述第一孔隙的孔径大小沿所述散热液体在所述第一管道中的流动方向均匀递增。\n\n[0018]根据本发明实施例提供的自发光显示装置，所述第二管道面向所述散热板的一侧设置有多个均匀排布的第二孔隙，流经所述散热板的所述散热液体从所述第二孔隙流出所述第二管道。\n\n[0019]根据本发明实施例提供的自发光显示装置，所述液体泵还包括输入口，所述输入口和所述第二管道相连，流经所述散热板的所述散热液体从所述第二管道流出，并通过所述输入口进入所述液体泵。\n\n[0020]根据本发明实施例提供的自发光显示装置，所述散热板和所述自发光显示面板之间设置有粘附层。\n\n[0021]根据本发明实施例提供的自发光显示装置，所述自发光显示面板为Mini LED显示面板和Micro LED显示面板中的任意一种。\n\n[0022]本发明的有益效果为：本发明提供的自发光显示装置，通过在自发光显示面板背后设置液流散热组件，液流散热装置包括液体泵、第一管道、第二管道以及散热板，散热板与自发光显示面板的显示区对应设置，通过液体泵流出的散热液体经过第一管道流经至散热板后从第二管道流出，从而散热板将自发光显示面板传导出来的热量进行吸收后由第二管道排出，完成散热过程，进而大大提高了自发光显示装置的散热性能。\n\n附图说明\n\n[0023]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0024]图1为本发明实施例提供的一种自发光显示装置的立体结构示意图；\n\n[0025]图2为本发明实施例提供的一种液流散热组件的平面结构示意图；\n\n[0026]图3为本发明实施例提供的第一种散热板的结构示意图；\n\n[0027]图4为本发明实施例提供的第二种散热板的结构示意图；\n\n[0028]图5为本发明实施例提供的第三种散热板的结构示意图。\n\n[0029]图6为图3提供的散热板的散热翅片的平面结构示意图；\n\n[0030]图7为图4提供的散热板的散热翅片的平面结构示意图；\n\n[0031]图8为图5提供的散热板的散热翅片的平面结构示意图；\n\n[0032]图9为本发明实施例提供的另一种液流散热组件的平面结构示意图；\n\n[0033]图10为本发明实施例提供的第一管道的结构示意图；\n\n[0034]图11为本发明实施例提供的第二管道的结构示意图。\n\n具体实施方式\n\n[0035]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0036]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0037]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0038]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0039]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0040]本发明针对现有技术的自发光显示装置散热性能不佳，本实施例能够解决该缺陷。\n\n[0041]请参阅图1、图2，本发明实施例提供的自发光显示装置，包括自发光显示面板1以及设置于所述自发光显示面板1背部的液流散热组件2，所述自发光显示面板1包括显示区11，所述显示区11设置有多个可以自发光的发光器件(图中未示出)，所述发光器件可以为Mini LED或Micro LED；所述液流散热组件2包括液体泵21、第一管道22、第二管道23以及散热板24，所述液体泵包括用于散热液体流出的输出口211，其中，所述液流散热组件2为水冷散热组件，所述液体泵21可以为水泵；所述第一管道22和所述第二管道23设置于所述自发光显示面板1的相对两侧，所述第一管道22的一端与所述输出口211相连，所述散热板24与所述显示区11对应设置，用于对位于所述显示区11的所述发光器件进行散热，本发明实施例中，所述散热板24为内部凹陷的长方体结构，其中，所述散热板24与所述第一管道22和所述第二管道23对应设置的侧边未设置有挡墙结构，而其余侧边设置有挡墙结构，以防止所述散热液体从侧部流出。\n\n[0042]本发明实施例通过所述输出口211流出的所述散热液体经过所述第一管道22流经所述散热板24后从所述第二管道23流出，从而所述散热板24将所述自发光显示面板1传导出来的热量进行吸收后由所述第二管道23排出，完成散热过程，进而大大提高了所述自发光显示装置的散热性能。\n\n[0043]具体地，所述散热板24上设置有多个均匀排布的散热翅片241，所述散热液体进入所述散热板24内部后，多个所述散热翅片241对所述散热液体的流动产生了一定阻力，从而提高了所述散热板24的换热能力。\n\n[0044]具体地，请参阅图3、图6，所述散热翅片241在所述自发光显示面板1上的正投影的形状可以为贯穿式长条状，所述散热翅片241的长轴与所述散热板24的底面长边平行，所述散热翅片241的长边长度为40mm，所述散热翅片241的短边长度为1mm，相邻两个所述散热翅片241之间的间隔距离为3mm。\n\n[0045]然而，针对大尺寸自发光显示装置，由于其一方面需要均匀的显示效果，另一方面也需要更为高效均匀的散热效果，因此所述散热板24需要散热效果较好的内部结构，故优选地，请参阅图4、图5，将所述散热翅片241在所述自发光显示面板1上的正投影的形状设计为菱形或矩形，其中，呈矩形的所述散热翅片241的长轴与所述散热板24的底面长边之间形成一倾斜角，由于倾斜的所述散热翅片241能够破坏热边界层的形成，增大换热系数，从而增加换热效果，吸收所述自发光显示面板1产生的更多热量，从而大大提高了所述发光器件的散热性能。\n\n[0046]具体地，呈矩形的所述散热翅片241的长轴与所述散热板24的底面长边之间形成的所述倾斜角可以为20°～60°，优选地，呈矩形的所述散热翅片241的长轴与所述散热板24的底面长边之间形成的所述倾斜角为30°。\n\n[0047]例如，请参阅图7，当所述散热翅片241在所述自发光显示面板1上的正投影的形状为菱形时，每一所述散热翅片241的侧边边长为2mm，相对的两条侧边之间的垂直距离为4mm，位于同一行的两个所述散热翅片241之间的距离为4mm，位于同一列的两个所述散热翅片241之间的距离为4mm；再如，请参阅图8，当所述散热翅片241在所述自发光显示面板1上的正投影的形状为矩形时，每一所述散热翅片241的长边长度为4mm，长边与水平方向之间的夹角为30°，位于同一行的两个所述散热翅片241之间的距离为4mm，位于同一列的两个所述散热翅片241之间的距离为4mm。\n\n[0048]优选地，请参阅图9，多个所述散热翅片241之间相互交错排布，同样地，由于交错排布的所述散热翅片241同样能够破坏热边界层的形成，增大换热系数，从而能够增加换热效果，吸收所述自发光显示面板1产生的更多热量，从而大大提高了所述发光器件的散热性能。\n\n[0049]具体地，请参阅图10，所述第一管道22面向所述散热板24的一侧设置有多个均匀排布的第一孔隙221，流经所述第一管道22的所述散热液体从所述第一孔隙221流入至所述散热板24中，具体地，多个所述第一孔隙221的孔径大小沿所述散热液体在所述第一管道22中的流动方向均匀递增，即靠近所述散热液体流入所述第一管道22的一端的所述第一孔隙221的孔径，小于远离所述散热液体流入所述第一管道22的一端，如此设置能够使得所述散热液体流量在所述散热板内均匀分布，从而提高所述自发光显示面板1在其各个位置处的温度的均一性，进而达到均匀出光的目的。\n\n[0050]同样地，请参阅图11，所述第二管道23面向所述散热板24的一侧设置有多个均匀排布的第二孔隙231，流经所述散热板24的所述散热液体从所述第二孔隙231流出所述第二管道23，所述第二孔隙231与所述第一孔隙221的不同之处在于，多个所述第二孔隙231的孔径大小均相等，从而使得流经所述散热板的所述散热液体从所述第二孔隙231均匀流出，以进一步提高所述自发光显示面板1在其各个位置处的温度的均一性。\n\n[0051]进一步地，请继续参阅图1、图9，所述液体泵还包括输入口212，所述输入口212和所述第二管道23相连，流经所述散热板24的所述散热液体从所述第二管道23流出，并通过所述输入口212进入所述液体泵21，使得液体泵21-第一管道22-散热板24-第二管道23-液体泵21组成的所述液流散热组件2形成一循环散热系统，从而使得所述散热液体可循环利用，简化步骤的同时可以节约成本，此外，所述液体泵21内部还应设置一冷却装置(图中未示出)，对从所述第二管道23流出的所述散热液体进行冷却处理，避免对所述自发光显示面板1即将进行的下一降温过程产生影响。\n\n[0052]具体地，所述散热板24和所述自发光显示面板1之间设置有粘附层，用于将所述散热板24贴附在所述自发光显示面板1背部，其中，所述粘附层的材料可以为双面胶。\n\n[0053]在本发明实施例中，所述自发光显示面板1可以为Mini LED显示面板和Micro LED显示面板中的任意一种，由于Mini LED显示面板和Micro LED显示面板上的发光器件的散热性能不佳，因此在所述Mini LED显示面板或Micro LED显示面板背后设置有所述液流散热组件2，能够有效达到均匀散热的目的。\n\n[0054]有益效果为：本发明实施例提供的自发光显示装置，通过在自发光显示面板背后设置液流散热组件，液流散热装置包括液体泵、第一管道、第二管道以及散热板，散热板与自发光显示面板的显示区对应设置，通过液体泵流出的散热液体经过第一管道流经至散热板后从第二管道流出，从而散热板将自发光显示面板传导出来的热量进行吸收后由第二管道排出，完成散热过程，进而大大提高了自发光显示装置的散热性能。\n\n[0055]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10893, 23947, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示背板及其制备方法、显示面板。\n\n背景技术\n\n[0002]由于微发光二极管(Micro Light-Emitting Diode,Micro-LED)显示背板或有机发光二极管(Organic Light-Emitting Diode,OLED)OLED显示背板中存在诸多金属走线，会造成屏幕的反射率偏光问题，从而影响实际观看效果，目前通常利用黑矩阵或黑油遮蔽金属走线的方式，或者采用圆偏光片的方式来降低屏幕的反射，然而采用黑矩阵或黑油遮蔽金属走线的方式存在降低开口率、增加实验制程、涂布精度低等缺陷，采用圆偏光片的方式存在降低出射光的亮度等缺陷，现有技术发现可以利用薄膜干涉原理在合适的膜厚参数条件下来有效降低金属走线的反射，然而，由于显示背板中的金属走线实际上位于不同的膜层，而不同膜层的金属走线上方的薄膜的厚度不一致，则会影响最终的减反效果。\n\n[0003]综上所述，需要提供一种新的显示背板及其制备方法、显示面板，来解决上述技术问题。\n\n发明内容\n\n[0004]本发明提供的显示背板及其制备方法、显示面板，解决了现有的显示背板利用薄膜干涉降低反射率时，由于不同膜层的金属走线上方的薄膜的厚度不一致，会影响最终的减反效果的技术问题。\n\n[0005]为解决上述问题，本发明提供的技术方案如下：\n\n[0006]本发明实施例提供一种显示背板，包括：\n\n[0007]基板；\n\n[0008]第一金属层，设置于所述基板上；\n\n[0009]层间介质层，覆盖所述第一金属层；\n\n[0010]第二金属层和附加金属层，设置于所述层间介质层远离所述基板的一侧；减反层，设置于所述第二金属层远离所述基板的一侧；以及\n\n[0011]平坦层，覆盖所述第二金属层；\n\n[0012]其中，所述附加金属层与所述第一金属层对应设置，以使位于所述第一金属层上方的所述平坦层的厚度与位于所述第二金属层上方的所述平坦层的厚度相等。\n\n[0013]根据本发明实施例提供的显示背板，所述显示背板还包括：\n\n[0014]遮光层，设置于所述基板上；\n\n[0015]缓冲层，覆于所述遮光层和所述基板上；\n\n[0016]有源层，设置于所述缓冲层上；\n\n[0017]栅极绝缘层，覆于所述有源层和所述缓冲层上；\n\n[0018]栅极层，设置于所述栅极绝缘层上；以及\n\n[0019]源极和漏极，设置于所述层间介质层上，所述源极和所述漏极分别通过第一过孔和第二过孔连接至所述有源层，所述漏极通过第三过孔连接至所述遮光层；\n\n[0020]其中，所述第一金属层包括所述栅极层，所述第二金属层包括所述源极和所述漏极。\n\n[0021]根据本发明实施例提供的显示背板，所述附加金属层在所述基板上的正投影覆盖所述第一金属层在所述基板上的正投影。\n\n[0022]根据本发明实施例提供的显示背板，所述附加金属层和所述第一金属层之间通过设置于所述平坦层上的第四过孔连接。\n\n[0023]根据本发明实施例提供的显示背板，所述减反层的材料为氧化钼。\n\n[0024]根据本发明实施例提供的显示背板，所述显示背板为Micro-LED显示背板或OLED显示背板。\n\n[0025]本发明实施例提供一种显示面板，包括上述显示背板。\n\n[0026]本发明实施例提供一种显示背板的制备方法，包括以下步骤：\n\n[0027]S10：提供基板，在所述基板上形成第一金属层；\n\n[0028]S20：在所述第一金属层上形成层间介质层；\n\n[0029]S30：在所述层间介质层上形成第二金属层和附加金属层，所述附加金属层与所述第一金属层对应设置；\n\n[0030]S40：在所述第二金属层和所述附加金属层远离所述基板的一侧形成减反层；以及\n\n[0031]S50：在所述减反层上形成平坦层，所述平坦层覆盖所述层间介质层、所述第二金属层、所述附加金属层以及所述减反层，位于所述第二金属层上方的所述平坦层的厚度与位于所述附加金属层上方的所述平坦层的厚度相等。\n\n[0032]根据本发明实施例提供的显示背板的制备方法，在制备所述显示背板的步骤中，还包括：\n\n[0033]在所述基板上图案化形成遮光层；\n\n[0034]在所述遮光层和所述基板上形成缓冲层；\n\n[0035]在所述缓冲层上图案化形成有源层；\n\n[0036]在所述有源层上图案化形成栅极绝缘层；\n\n[0037]在所述栅极绝缘层上图案化形成栅极层；\n\n[0038]在所述栅极层、所述有源层以及所述缓冲层上形成所述层间介质层；\n\n[0039]在所述层间介质层上图案化形成连接于所述有源层的源极和漏极；\n\n[0040]在所述层间介质层上图案化形成所述附加金属层；\n\n[0041]在所述源极和所述漏极以及所述附加金属层上形成所述减反层；以及\n\n[0042]在所述源极、所述漏极以及所述附加金属层以及所述减反层上形成所述平坦层。\n\n[0043]根据本发明实施例提供的显示背板的制备方法，所述第二金属层和所述附加金属层采用同一制程制备而成。\n\n[0044]本发明的有益效果为：本发明提供的显示背板及其制备方法、显示面板，通过制备与第二金属层同层设置的附加金属层，附加金属层与第一金属层相对设置，从而使得位于第一金属层上方的平坦层的厚度与位于第二金属层上方的平坦层的厚度保持一致，避免由于不同膜层的金属走线上方的平坦层产生的薄膜干涉现象对减反效果的影响，能够优化显示面板的减反效果。\n\n附图说明\n\n[0045]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0046]图1为本发明实施例提供的一种显示背板的截面结构示意图；\n\n[0047]图2为本发明实施例提供的减反层厚度与反射率的曲线图；\n\n[0048]图3为本发明实施例提供的一种显示背板的制备方法的流程图；\n\n[0049]图3A～图3E为本发明实施例提供的一种显示背板的制备方法的流程结构示意图。\n\n具体实施方式\n\n[0050]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0051]本发明针对现有技术的显示背板利用薄膜干涉降低反射率时，由于不同膜层的金属走线上方的平坦层的厚度不一致，会影响最终的减反效果，本实施例能够解决该缺陷。\n\n[0052]请参考图1，本发明实施例提供的显示背板，包括基板101、第一金属层107、层间介质层105、第二金属层108、附加金属层109、减反层110以及平坦层111，所述第一金属层107设置于所述基板101上，所述层间介质层105覆盖所述第一金属层107，所述第二金属层108和所述附加金属层109设置于所述层间介质层105远离所述基板101的一侧，所述减反层110设置于所述第二金属层108远离所述基板101的一侧，所述平坦层111覆盖所述第二金属层108。\n\n[0053]由于光线经过所述减反层110时能够产生薄膜干涉，所述减反层110形成的反射光与所述第一金属层107和所述第二金属层108形成的反射光经过光线的干涉相消作用，可以减小所述显示背板的反射光线，从而能够降低反射率，提升画面的显示质量。\n\n[0054]所述层间介质层105和所述平坦层111的材料为氧化硅、氮化硅以及氮氧化硅中的一种或多种，由于所述第一金属层107和所述第二金属层108上方设置有所述层间介质层105和所述平坦层111等薄膜层，其厚度约为几百纳米，因此光线在所述层间介质层105和所述平坦层111内也会发生比较明显的薄膜干涉现象，影响反射率，故位于不同膜层的金属走线上方的所述层间介质层105和所述平坦层111的厚度不一致，则会导致所述减反层110对光线的减反效果不同。在本发明实施例中，将所述附加金属层109与所述第二金属层108同层设置，且所述附加金属层109与所述第一金属层107对应设置，一方面，由于所述附加金属层109的厚度在几百纳米左右，基本不会有光线透过所述附加金属层109到达所述层间介质层105，故位于所述第一金属层107上方的所述层间介质层105将不会影响减反效果；另一方面，所述附加金属层109的设置，能够使得位于所述第一金属层107上方的所述平坦层111的厚度与位于所述第二金属层108上方的所述平坦层111的厚度相等，从而避免了由于位于不同膜层的金属走线上方的所述平坦层111的厚度不一致而引起的减反效果不同的现象发生。\n\n[0055]进一步地，所述显示背板还包括遮光层102、缓冲层103、有源层104、栅极绝缘层106、栅极层1071、源极1081以及漏极1082；具体地，所述遮光层102设置于所述基板101上，用于对光线进行遮挡，有效的避免所述显示背板漏光；所述缓冲层103设置于所述基板101上，其用于减缓移动过程中振动对所述显示背板的冲击力；所述有源层104设置于所述缓冲层103上，所述有源层104的材料可以为铟镓锌氧化物(indium gallium zinc oxide，IGZO)，所述有源层104包括位于两端的掺杂区1041以及位于两个所述掺杂区1041之间的非掺杂区1042，所述掺杂区1041可以通过离子注入等工艺形成；所述栅极层1071设置于所述栅极绝缘层106上，并对应于所述有源层104的所述非掺杂区1042；所述源极1081和所述漏极1082设置于所述层间介质层105上，所述源极1081和所述漏极1082分别通过第一过孔112和第二过孔113连接至所述有源层104的所述掺杂区1041，所述漏极1082通过第三过孔114连接至所述遮光层102，具体地，所述第一过孔112和所述第二过孔113穿过所述层间介质层105，所述第三过孔114穿过所述层间介质层105以及所述缓冲层103。\n\n[0056]其中，所述第一金属层107和所述第二金属层108可以为含有铜、钛、钼等导电性能优异的金属或合金，所述第一金属层107包括所述栅极层1071，所述第二金属层108包括所述源极1081和所述漏极1082，进一步地，所述第一金属层还107包括扫描线，所述第二金属层108还包括数据线。\n\n[0057]本发明实施例中，所述附加金属层109在所述基板101上的正投影覆盖所述第一金属层107在所述基板101上的正投影，以便于调节所述平坦层111与所述减反层110的厚度，从而实现所述显示背板达到整面均匀的低反射率效果。\n\n[0058]可以理解的是，所述附加金属层109和所述第一金属层107同层制备，且所述附加金属层109和所述第一金属层107的高度相等，以使位于所述第一金属层107上方的所述平坦层111的厚度等于位于所述第二金属层108上方的所述平坦层111的厚度。\n\n[0059]进一步地，在本发明实施例中，所述附加金属层109和所述第一金属层107之间可以通过设置于所述平坦层111上的第四过孔115连接，当然，在其它实施例中，所述附加金属层109和所述第一金属层107之间也可以不连接，不应以此为限。\n\n[0060]具体地，所述减反层110采用弱吸收系数的无机物薄膜，例如所述减反层110的材料为氧化钼(MoOx)等，一般情况下，对于空气/减反层/金属走线这样的三层结构来说，当所述减反层110的厚度等于1/4波长时，可以获得较低的反射率，相应地，在本发明实施例中，可以通过设计所述减反层110和所述平坦层111的厚度，来比较容易地获得均匀的低反射率，具体数值可根据所述减反层110和所述平坦层111的介电常数参数进行理论计算得到，例如可参照图2中提供的实验数据，在所述平坦层111的厚度为250nm，所述减反层110选用氧化钼(MoOx)材料的条件下，当所述减反层110的厚度为60nm时，其反射率最低。\n\n[0061]具体地，所述显示背板可以为Micro-LED显示背板或OLED显示背板，当所述显示背板为Micro-LED显示背板时，所述显示背板还包括LED芯片，在所述基板上形成薄膜晶体管阵列后，通过巨量转移的方式，将LED芯片转移至所述薄膜晶体管阵列上方；当所述显示背板为OLED显示背板时，所述显示背板还包括设置于薄膜晶体管阵列上的有机发光层、像素定义层以及封装层等膜层结构，此为现有技术，在此不再赘述。\n\n[0062]请参考图3，本发明实施例提供的显示背板的制备方法，包括以下步骤：\n\n[0063]S10：提供基板101，在所述基板101上形成第一金属层107。\n\n[0064]具体地，请参考图3A，所述基板101可以为柔性基板，所述基板101的材料为聚酰亚胺(Polyimide，PI)，在所述基板101上通过一道黄光制程图案化形成所述第一金属层107，所述第一金属层107包括多条金属走线，所述第一金属层107的材料可以为含有铜、钛以及钼等导电性能优异的金属或合金。\n\n[0065]S20：在所述第一金属层107上形成层间介质层105。\n\n[0066]具体地，请参考图3B，可以通过沉积、溅射或涂覆的方法在所述第一金属层107上形成所述介质层，所述层间介质层105的材料可以为氧化硅、氮化硅以及氮氧化硅中的一种或多种。\n\n[0067]S30：在所述层间介质层105上形成第二金属层108和附加金属层109，所述附加金属层109与所述第一金属层107对应设置。\n\n[0068]具体地，请参考图3C，通过一道黄光制程在所述层间介质层105上形成所述第二金属层108和所述附加金属层109，所述第一金属层107包括多条金属走线，所述第二金属层108的材料可以含有铜、钛以及钼等导电性能优异的金属或合金；所述附加金属层109与所述第一金属层107对应设置，所述第二金属层108和所述附加金属层109采用同一制程制备而成，可以节省制程，所述第二金属层108和所述附加金属层109可以采用同样的材料。\n\n[0069]S40：在所述第二金属层108和所述附加金属层109远离所述基板101的一侧形成减反层110。\n\n[0070]具体地，请参考图3D，可以通过在所述第二金属层108和所述附加金属层109远离所述基板101的一侧溅射一层减反材料，再通过刻蚀工艺形成所述减反层110，所述减反层110的材料可以为氧化钼(MoOx)等。\n\n[0071]S50：在所述减反层110上形成平坦层111，所述平坦层111覆盖所述层间介质层105、所述第二金属层108、所述附加金属层109以及所述减反层110，位于所述第二金属层108上方的所述平坦层111的厚度与位于所述附加金属层109上方的所述平坦层111的厚度相等。\n\n[0072]具体地，请参考图3E，可以通过沉积、溅射或涂覆的方法在所述减反层110上形成所述平坦层111，所述平坦层111的材料可以为氧化硅、氮化硅以及氮氧化硅中的一种或多种。\n\n[0073]在本发明实施例中，通过在所述层间介质层105上形成与所述第一金属层107对应设置的所述附加金属层109，使得位于所述第二金属层108上方的所述平坦层111的厚度与位于所述附加金属层109上方的所述平坦层111的厚度相等，从而避免了由于位于不同膜层的金属走线上方的所述平坦层111的厚度不一致而引起的减反效果不同的现象发生。\n\n[0074]在本发明实施例中，可以通过设计所述减反层110和所述平坦层111的厚度，来比较容易地获得均匀的低反射率。\n\n[0075]进一步地，在制备所述显示背板的步骤中，还包括：\n\n[0076]在所述基板101上图案化形成遮光层102；\n\n[0077]在所述遮光层102和所述基板101上形成缓冲层103；\n\n[0078]在所述缓冲层103上图案化形成有源层104；\n\n[0079]在所述有源层104上图案化形成栅极绝缘层106；\n\n[0080]在所述栅极绝缘层106上图案化形成栅极层1071；\n\n[0081]在所述栅极层1071、所述有源层104以及所述缓冲层103上形成所述层间介质层105；\n\n[0082]在所述层间介质层105上图案化形成连接于所述有源层104的源极1081和漏极1082；\n\n[0083]在所述层间介质层105上图案化形成所述附加金属层109；\n\n[0084]在所述源极1081和所述漏极1082以及所述附加金属层109上形成所述减反层110；以及\n\n[0085]在所述源极1081、所述漏极1082以及所述附加金属层109以及所述减反层110上形成所述平坦层111。\n\n[0086]其中，所述遮光层102、所述有源层104、所述栅极绝缘层106、所述栅极层1071、所述源极1081和所述漏极1082以及所述附加金属层109可以分别通过一道黄光制程制备而成，所述缓冲层103、所述层间介质层105以及所述平坦层111可以通过沉积、溅射或涂覆的方法形成。\n\n[0087]所述源极1081和所述漏极1082分别通过第一过孔112和第二过孔113连接至所述有源层104的所述掺杂区1041，所述漏极1082通过第三过孔114连接至所述遮光层102，具体地，所述第一过孔112和所述第二过孔113穿过所述层间介质层105，所述第三过孔114穿过所述层间介质层105以及所述缓冲层103。\n\n[0088]具体地，所述第一金属层107包括所述栅极层1071，所述第二金属层108包括所述源极1081和所述漏极1082，进一步地，所述第一金属层107还包括扫描线，所述第二金属层108还包括数据线。\n\n[0089]本发明实施例还包括一种显示面板，所述显示面板包括上述实施例中的所述显示背板，所述显示面板可以为Micro-LED显示面板或OLED显示面板。\n\n[0090]有益效果为：本发明实施例提供的显示背板及其制备方法、显示面板，通过制备与第二金属层同层设置的附加金属层，附加金属层与第一金属层相对设置，从而使得位于第一金属层上方的平坦层的厚度与位于第二金属层上方的平坦层的厚度保持一致，避免由于不同膜层的金属走线上方的平坦层产生的薄膜干涉现象对减反效果的影响，能够优化显示面板的减反效果。\n\n[0091]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示背板及其制备方法、显示面板。\n\n背景技术\n\n[0002]由于微发光二极管(Micro Light-Emitting Diode,Micro-LED)显示背板或有机发光二极管(Organic Light-Emitting Diode,OLED)OLED显示背板中存在诸多金属走线，会造成屏幕的反射率偏光问题，从而影响实际观看效果，目前通常利用黑矩阵或黑油遮蔽金属走线的方式，或者采用圆偏光片的方式来降低屏幕的反射，然而采用黑矩阵或黑油遮蔽金属走线的方式存在降低开口率、增加实验制程、涂布精度低等缺陷，采用圆偏光片的方式存在降低出射光的亮度等缺陷，现有技术发现可以利用薄膜干涉原理在合适的膜厚参数条件下来有效降低金属走线的反射，然而，由于显示背板中的金属走线实际上位于不同的膜层，而不同膜层的金属走线上方的薄膜的厚度不一致，则会影响最终的减反效果。\n\n[0003]综上所述，需要提供一种新的显示背板及其制备方法、显示面板，来解决上述技术问题。\n\n发明内容\n\n[0004]本发明提供的显示背板及其制备方法、显示面板，解决了现有的显示背板利用薄膜干涉降低反射率时，由于不同膜层的金属走线上方的薄膜的厚度不一致，会影响最终的减反效果的技术问题。\n\n[0005]为解决上述问题，本发明提供的技术方案如下：\n\n[0006]本发明实施例提供一种显示背板，包括：\n\n[0007]基板；\n\n[0008]第一金属层，设置于所述基板上；\n\n[0009]层间介质层，覆盖所述第一金属层；\n\n[0010]第二金属层和附加金属层，设置于所述层间介质层远离所述基板的一侧；减反层，设置于所述第二金属层远离所述基板的一侧；以及\n\n[0011]平坦层，覆盖所述第二金属层；\n\n[0012]其中，所述附加金属层与所述第一金属层对应设置，以使位于所述第一金属层上方的所述平坦层的厚度与位于所述第二金属层上方的所述平坦层的厚度相等。\n\n[0013]根据本发明实施例提供的显示背板，所述显示背板还包括：\n\n[0014]遮光层，设置于所述基板上；\n\n[0015]缓冲层，覆于所述遮光层和所述基板上；\n\n[0016]有源层，设置于所述缓冲层上；\n\n[0017]栅极绝缘层，覆于所述有源层和所述缓冲层上；\n\n[0018]栅极层，设置于所述栅极绝缘层上；以及\n\n[0019]源极和漏极，设置于所述层间介质层上，所述源极和所述漏极分别通过第一过孔和第二过孔连接至所述有源层，所述漏极通过第三过孔连接至所述遮光层；\n\n[0020]其中，所述第一金属层包括所述栅极层，所述第二金属层包括所述源极和所述漏极。\n\n[0021]根据本发明实施例提供的显示背板，所述附加金属层在所述基板上的正投影覆盖所述第一金属层在所述基板上的正投影。\n\n[0022]根据本发明实施例提供的显示背板，所述附加金属层和所述第一金属层之间通过设置于所述平坦层上的第四过孔连接。\n\n[0023]根据本发明实施例提供的显示背板，所述减反层的材料为氧化钼。\n\n[0024]根据本发明实施例提供的显示背板，所述显示背板为Micro-LED显示背板或OLED显示背板。\n\n[0025]本发明实施例提供一种显示面板，包括上述显示背板。\n\n[0026]本发明实施例提供一种显示背板的制备方法，包括以下步骤：\n\n[0027]S10：提供基板，在所述基板上形成第一金属层；\n\n[0028]S20：在所述第一金属层上形成层间介质层；\n\n[0029]S30：在所述层间介质层上形成第二金属层和附加金属层，所述附加金属层与所述第一金属层对应设置；\n\n[0030]S40：在所述第二金属层和所述附加金属层远离所述基板的一侧形成减反层；以及\n\n[0031]S50：在所述减反层上形成平坦层，所述平坦层覆盖所述层间介质层、所述第二金属层、所述附加金属层以及所述减反层，位于所述第二金属层上方的所述平坦层的厚度与位于所述附加金属层上方的所述平坦层的厚度相等。\n\n[0032]根据本发明实施例提供的显示背板的制备方法，在制备所述显示背板的步骤中，还包括：\n\n[0033]在所述基板上图案化形成遮光层；\n\n[0034]在所述遮光层和所述基板上形成缓冲层；\n\n[0035]在所述缓冲层上图案化形成有源层；\n\n[0036]在所述有源层上图案化形成栅极绝缘层；\n\n[0037]在所述栅极绝缘层上图案化形成栅极层；\n\n[0038]在所述栅极层、所述有源层以及所述缓冲层上形成所述层间介质层；\n\n[0039]在所述层间介质层上图案化形成连接于所述有源层的源极和漏极；\n\n[0040]在所述层间介质层上图案化形成所述附加金属层；\n\n[0041]在所述源极和所述漏极以及所述附加金属层上形成所述减反层；以及\n\n[0042]在所述源极、所述漏极以及所述附加金属层以及所述减反层上形成所述平坦层。\n\n[0043]根据本发明实施例提供的显示背板的制备方法，所述第二金属层和所述附加金属层采用同一制程制备而成。\n\n[0044]本发明的有益效果为：本发明提供的显示背板及其制备方法、显示面板，通过制备与第二金属层同层设置的附加金属层，附加金属层与第一金属层相对设置，从而使得位于第一金属层上方的平坦层的厚度与位于第二金属层上方的平坦层的厚度保持一致，避免由于不同膜层的金属走线上方的平坦层产生的薄膜干涉现象对减反效果的影响，能够优化显示面板的减反效果。\n\n附图说明\n\n[0045]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0046]图1为本发明实施例提供的一种显示背板的截面结构示意图；\n\n[0047]图2为本发明实施例提供的减反层厚度与反射率的曲线图；\n\n[0048]图3为本发明实施例提供的一种显示背板的制备方法的流程图；\n\n[0049]图3A～图3E为本发明实施例提供的一种显示背板的制备方法的流程结构示意图。\n\n具体实施方式\n\n[0050]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0051]本发明针对现有技术的显示背板利用薄膜干涉降低反射率时，由于不同膜层的金属走线上方的平坦层的厚度不一致，会影响最终的减反效果，本实施例能够解决该缺陷。\n\n[0052]请参考图1，本发明实施例提供的显示背板，包括基板101、第一金属层107、层间介质层105、第二金属层108、附加金属层109、减反层110以及平坦层111，所述第一金属层107设置于所述基板101上，所述层间介质层105覆盖所述第一金属层107，所述第二金属层108和所述附加金属层109设置于所述层间介质层105远离所述基板101的一侧，所述减反层110设置于所述第二金属层108远离所述基板101的一侧，所述平坦层111覆盖所述第二金属层108。\n\n[0053]由于光线经过所述减反层110时能够产生薄膜干涉，所述减反层110形成的反射光与所述第一金属层107和所述第二金属层108形成的反射光经过光线的干涉相消作用，可以减小所述显示背板的反射光线，从而能够降低反射率，提升画面的显示质量。\n\n[0054]所述层间介质层105和所述平坦层111的材料为氧化硅、氮化硅以及氮氧化硅中的一种或多种，由于所述第一金属层107和所述第二金属层108上方设置有所述层间介质层105和所述平坦层111等薄膜层，其厚度约为几百纳米，因此光线在所述层间介质层105和所述平坦层111内也会发生比较明显的薄膜干涉现象，影响反射率，故位于不同膜层的金属走线上方的所述层间介质层105和所述平坦层111的厚度不一致，则会导致所述减反层110对光线的减反效果不同。在本发明实施例中，将所述附加金属层109与所述第二金属层108同层设置，且所述附加金属层109与所述第一金属层107对应设置，一方面，由于所述附加金属层109的厚度在几百纳米左右，基本不会有光线透过所述附加金属层109到达所述层间介质层105，故位于所述第一金属层107上方的所述层间介质层105将不会影响减反效果；另一方面，所述附加金属层109的设置，能够使得位于所述第一金属层107上方的所述平坦层111的厚度与位于所述第二金属层108上方的所述平坦层111的厚度相等，从而避免了由于位于不同膜层的金属走线上方的所述平坦层111的厚度不一致而引起的减反效果不同的现象发生。\n\n[0055]进一步地，所述显示背板还包括遮光层102、缓冲层103、有源层104、栅极绝缘层106、栅极层1071、源极1081以及漏极1082；具体地，所述遮光层102设置于所述基板101上，用于对光线进行遮挡，有效的避免所述显示背板漏光；所述缓冲层103设置于所述基板101上，其用于减缓移动过程中振动对所述显示背板的冲击力；所述有源层104设置于所述缓冲层103上，所述有源层104的材料可以为铟镓锌氧化物(indium gallium zinc oxide，IGZO)，所述有源层104包括位于两端的掺杂区1041以及位于两个所述掺杂区1041之间的非掺杂区1042，所述掺杂区1041可以通过离子注入等工艺形成；所述栅极层1071设置于所述栅极绝缘层106上，并对应于所述有源层104的所述非掺杂区1042；所述源极1081和所述漏极1082设置于所述层间介质层105上，所述源极1081和所述漏极1082分别通过第一过孔112和第二过孔113连接至所述有源层104的所述掺杂区1041，所述漏极1082通过第三过孔114连接至所述遮光层102，具体地，所述第一过孔112和所述第二过孔113穿过所述层间介质层105，所述第三过孔114穿过所述层间介质层105以及所述缓冲层103。\n\n[0056]其中，所述第一金属层107和所述第二金属层108可以为含有铜、钛、钼等导电性能优异的金属或合金，所述第一金属层107包括所述栅极层1071，所述第二金属层108包括所述源极1081和所述漏极1082，进一步地，所述第一金属层还107包括扫描线，所述第二金属层108还包括数据线。\n\n[0057]本发明实施例中，所述附加金属层109在所述基板101上的正投影覆盖所述第一金属层107在所述基板101上的正投影，以便于调节所述平坦层111与所述减反层110的厚度，从而实现所述显示背板达到整面均匀的低反射率效果。\n\n[0058]可以理解的是，所述附加金属层109和所述第一金属层107同层制备，且所述附加金属层109和所述第一金属层107的高度相等，以使位于所述第一金属层107上方的所述平坦层111的厚度等于位于所述第二金属层108上方的所述平坦层111的厚度。\n\n[0059]进一步地，在本发明实施例中，所述附加金属层109和所述第一金属层107之间可以通过设置于所述平坦层111上的第四过孔115连接，当然，在其它实施例中，所述附加金属层109和所述第一金属层107之间也可以不连接，不应以此为限。\n\n[0060]具体地，所述减反层110采用弱吸收系数的无机物薄膜，例如所述减反层110的材料为氧化钼(MoOx)等，一般情况下，对于空气/减反层/金属走线这样的三层结构来说，当所述减反层110的厚度等于1/4波长时，可以获得较低的反射率，相应地，在本发明实施例中，可以通过设计所述减反层110和所述平坦层111的厚度，来比较容易地获得均匀的低反射率，具体数值可根据所述减反层110和所述平坦层111的介电常数参数进行理论计算得到，例如可参照图2中提供的实验数据，在所述平坦层111的厚度为250nm，所述减反层110选用氧化钼(MoOx)材料的条件下，当所述减反层110的厚度为60nm时，其反射率最低。\n\n[0061]具体地，所述显示背板可以为Micro-LED显示背板或OLED显示背板，当所述显示背板为Micro-LED显示背板时，所述显示背板还包括LED芯片，在所述基板上形成薄膜晶体管阵列后，通过巨量转移的方式，将LED芯片转移至所述薄膜晶体管阵列上方；当所述显示背板为OLED显示背板时，所述显示背板还包括设置于薄膜晶体管阵列上的有机发光层、像素定义层以及封装层等膜层结构，此为现有技术，在此不再赘述。\n\n[0062]请参考图3，本发明实施例提供的显示背板的制备方法，包括以下步骤：\n\n[0063]S10：提供基板101，在所述基板101上形成第一金属层107。\n\n[0064]具体地，请参考图3A，所述基板101可以为柔性基板，所述基板101的材料为聚酰亚胺(Polyimide，PI)，在所述基板101上通过一道黄光制程图案化形成所述第一金属层107，所述第一金属层107包括多条金属走线，所述第一金属层107的材料可以为含有铜、钛以及钼等导电性能优异的金属或合金。\n\n[0065]S20：在所述第一金属层107上形成层间介质层105。\n\n[0066]具体地，请参考图3B，可以通过沉积、溅射或涂覆的方法在所述第一金属层107上形成所述介质层，所述层间介质层105的材料可以为氧化硅、氮化硅以及氮氧化硅中的一种或多种。\n\n[0067]S30：在所述层间介质层105上形成第二金属层108和附加金属层109，所述附加金属层109与所述第一金属层107对应设置。\n\n[0068]具体地，请参考图3C，通过一道黄光制程在所述层间介质层105上形成所述第二金属层108和所述附加金属层109，所述第一金属层107包括多条金属走线，所述第二金属层108的材料可以含有铜、钛以及钼等导电性能优异的金属或合金；所述附加金属层109与所述第一金属层107对应设置，所述第二金属层108和所述附加金属层109采用同一制程制备而成，可以节省制程，所述第二金属层108和所述附加金属层109可以采用同样的材料。\n\n[0069]S40：在所述第二金属层108和所述附加金属层109远离所述基板101的一侧形成减反层110。\n\n[0070]具体地，请参考图3D，可以通过在所述第二金属层108和所述附加金属层109远离所述基板101的一侧溅射一层减反材料，再通过刻蚀工艺形成所述减反层110，所述减反层110的材料可以为氧化钼(MoOx)等。\n\n[0071]S50：在所述减反层110上形成平坦层111，所述平坦层111覆盖所述层间介质层105、所述第二金属层108、所述附加金属层109以及所述减反层110，位于所述第二金属层108上方的所述平坦层111的厚度与位于所述附加金属层109上方的所述平坦层111的厚度相等。\n\n[0072]具体地，请参考图3E，可以通过沉积、溅射或涂覆的方法在所述减反层110上形成所述平坦层111，所述平坦层111的材料可以为氧化硅、氮化硅以及氮氧化硅中的一种或多种。\n\n[0073]在本发明实施例中，通过在所述层间介质层105上形成与所述第一金属层107对应设置的所述附加金属层109，使得位于所述第二金属层108上方的所述平坦层111的厚度与位于所述附加金属层109上方的所述平坦层111的厚度相等，从而避免了由于位于不同膜层的金属走线上方的所述平坦层111的厚度不一致而引起的减反效果不同的现象发生。\n\n[0074]在本发明实施例中，可以通过设计所述减反层110和所述平坦层111的厚度，来比较容易地获得均匀的低反射率。\n\n[0075]进一步地，在制备所述显示背板的步骤中，还包括：\n\n[0076]在所述基板101上图案化形成遮光层102；\n\n[0077]在所述遮光层102和所述基板101上形成缓冲层103；\n\n[0078]在所述缓冲层103上图案化形成有源层104；\n\n[0079]在所述有源层104上图案化形成栅极绝缘层106；\n\n[0080]在所述栅极绝缘层106上图案化形成栅极层1071；\n\n[0081]在所述栅极层1071、所述有源层104以及所述缓冲层103上形成所述层间介质层105；\n\n[0082]在所述层间介质层105上图案化形成连接于所述有源层104的源极1081和漏极1082；\n\n[0083]在所述层间介质层105上图案化形成所述附加金属层109；\n\n[0084]在所述源极1081和所述漏极1082以及所述附加金属层109上形成所述减反层110；以及\n\n[0085]在所述源极1081、所述漏极1082以及所述附加金属层109以及所述减反层110上形成所述平坦层111。\n\n[0086]其中，所述遮光层102、所述有源层104、所述栅极绝缘层106、所述栅极层1071、所述源极1081和所述漏极1082以及所述附加金属层109可以分别通过一道黄光制程制备而成，所述缓冲层103、所述层间介质层105以及所述平坦层111可以通过沉积、溅射或涂覆的方法形成。\n\n[0087]所述源极1081和所述漏极1082分别通过第一过孔112和第二过孔113连接至所述有源层104的所述掺杂区1041，所述漏极1082通过第三过孔114连接至所述遮光层102，具体地，所述第一过孔112和所述第二过孔113穿过所述层间介质层105，所述第三过孔114穿过所述层间介质层105以及所述缓冲层103。\n\n[0088]具体地，所述第一金属层107包括所述栅极层1071，所述第二金属层108包括所述源极1081和所述漏极1082，进一步地，所述第一金属层107还包括扫描线，所述第二金属层108还包括数据线。\n\n[0089]本发明实施例还包括一种显示面板，所述显示面板包括上述实施例中的所述显示背板，所述显示面板可以为Micro-LED显示面板或OLED显示面板。\n\n[0090]有益效果为：本发明实施例提供的显示背板及其制备方法、显示面板，通过制备与第二金属层同层设置的附加金属层，附加金属层与第一金属层相对设置，从而使得位于第一金属层上方的平坦层的厚度与位于第二金属层上方的平坦层的厚度保持一致，避免由于不同膜层的金属走线上方的平坦层产生的薄膜干涉现象对减反效果的影响，能够优化显示面板的减反效果。\n\n[0091]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10894, 23948, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种液晶显示装置。\n\n背景技术\n\n[0002]随着显示技术的不断发展，全面屏由于优良的显示效果和外观，成为当前显示装置的热门趋势。其中，在显示装置的背光模组内进行挖孔设计，在挖孔内设置前置摄像头，由于可以将前置摄像头放置在屏幕内部，比起“刘海屏”或“水滴屏”能进一步提高屏占比，因此挖孔设计越来越受到人们关注。\n\n[0003]然而，现有的显示装置的背光模组的挖孔通常为胶铁一体结构或纯铁框结构，需由框胶与铁框相互贴合成一体形成挖孔，或由铁框弯折形成背光框，因此挖孔内没有专门的光源提供，使得挖孔内部的光线较暗或几乎没有光线，导致挖孔对应的显示面板区域难以正常显示画面，仅仅只能作为外界环境光的接收通道，也就是说，目前的显示装置的前置摄像头区域仅仅只能作为拍照使用，而不能实现较好的显示功能，这并不是真正意义上的全面屏技术。\n\n[0004]由此可知，如何使得前置摄像头区域既能实现拍照功能，又能实现显示功能，是实现真正全面屏技术的关键，因此有必要提出一种显示装置，以解决目前由于挖孔内没有专门的光源而使得前置摄像头区域仅能拍照而难以实现较好的显示功能的问题。\n\n发明内容\n\n[0005]为了解决目前由于挖孔内没有专门的光源而使得前置摄像头区域仅能拍照而难以实现较好的显示功能的问题，本申请提供一种液晶显示装置，包括：\n\n[0006]液晶显示面板；\n\n[0007]第一背光组件，位于所述液晶显示面板的一侧，所述第一背光组件中形成有透光孔，所述透光孔与所述感光区域对应设置；以及，\n\n[0008]第二背光组件，位于所述第一背光组件的远离所述液晶显示面板的一侧，所述第二背光组件与所述透光孔对应设置；\n\n[0009]所述第二背光组件包括调光液晶片、发光元件和电路板，所述电路板用于控制所述发光元件发光以及所述调光液晶片处于透明状态或雾化状态，若所述调光液晶片为透明状态，则外界环境光通过所述感光区域入射到所述第二背光组件的远离所述液晶显示面板的一侧；若所述调光液晶片为雾化状态，则所述调光液晶片与所述发光元件配合构成补偿面光源，为所述感光区域的显示提供背光；\n\n[0010]其中，所述调光液晶片和所述电路板层叠设置并通过粘贴的方式电性连接，所述电路板上设有与所述透光孔相对设置的通孔，所述通孔的孔径不小于所述透光孔的孔径。\n\n[0011]在一些实施例中，所述调光液晶片包括相对设置的第一透明基板和第二透明基板，所述第一透明基板层和所述第二透明基板之间设置有液晶微粒；所述第一透明基板和所述第二透明基板面向所述液晶微粒的一侧分别设有电极层，所述电路板分别为所述第一透明基板的电极层和所述第二透明基板的电极层提供正极电位和负极电位。\n\n[0012]在一些实施例中，所述第一透明基板和所述第二透明基板交错设置且在垂直投影上均有未被对方覆盖的区域，所述第一透明基板未被所述第二透明电极层覆盖的区域设有缺口；所述第一透明基板在未被所述第二透明基板覆盖的区域粘贴有第一导电胶，所述第一导电胶通过所述缺口与所述电路板粘结；所述第二透明基板在未被所述第一透明基板覆盖的区域粘贴有第二导电胶，所述第二导电胶与所述电路板粘贴。\n\n[0013]在一些实施例中，所述第一导电胶粘贴于所述第一透明基板的电极层，所述第二导电胶粘贴于所述第二透明基板的电极层。\n\n[0014]在一些实施例中，所述调光液晶片、所述发光元件和所述电路板由上至下依次设置，所述发光元件包括多个发光二极管，多个所述发光二极管围绕所述通孔设置。\n\n[0015]在一些实施例中，所述发光元件与所述调光液晶片处于同一层，所述发光元件包括多个发光二极管，多个发光二极管围绕所述调光液晶片设置。\n\n[0016]在一些实施例中，所述发光元件和所述调光液晶片处于所述电路板的上方，或所述发光元件和所述调光液晶片处于所述电路板的下方。\n\n[0017]在一些实施例中，若所述调光液晶片为正向调光液晶片，则所述第一透明基板的电极层和所述第二透明基板的电极层施加电压时，所述调光液晶片为透明状态；所述第一透明基板的电极层和所述第二透明基板的电极层不施加电压时，所述调光液晶片为雾化状态；若所述调光液晶片为反向调光液晶片，则所述第一透明基板的电极层和所述第二透明基本的电极层施加电压时，所述调光液晶片为雾化状态；所述第一透明的电极层和所述第二透明的电极层不施加电压时，所述调光液晶片为透明状态。\n\n[0018]在一些实施例中，所述液晶微粒的材料为聚合物分散液晶材料或聚合物网络液晶材料。\n\n[0019]在一些实施例中，所述第二背光组件还包括中空塑胶框，所述中空塑胶框用于将所述调光液晶片、发光元件和电路板固定为整体。\n\n[0020]本申请实施例提供一种液晶显示装置，包括由上至下依次层叠设置的液晶显示面板、第一背光组件、第二背光组件，其中，第一背光组件设有透光孔，第二背光组件相对于透光孔设置，第二背光组件包括调光液晶片、发光元件和电路板，电路板上设有与透光孔相对设置且孔径大于透光孔孔径的通孔。\n\n[0021]当液晶显示面板对应于透光孔的感光区域需要使外界环境光穿过时，电路板使调光液晶片处于透明状态并使外界环境光经过液晶显示面板、第一背光组件的透光孔、第二背光组件的调光液晶片和电路板的通孔(或者是先经过电路板的通孔再经过第二背光组件的调光液晶片)入射到第二背光组件远离第一背光组件的背侧；而当液晶显示面板对应于透光孔的区域需要进行显示时，电路板使调光液晶片处于雾化状态并使发光元件发光而提供补偿面光源，补偿面光源经过调光液晶片导光入射到透光孔对应的感光区域。由此，该液晶显示装置在透光孔对应的感光区域兼顾图像采集功能(或屏下指纹识别功能)和屏幕显示功能，从而实现了真正的全面屏技术。同时，第二背光组件的调光液晶片和电路板层叠设置并通过粘贴的方式电性连接，能使得第二背光组件的结构简单，实现超薄设计。\n\n附图说明\n\n[0022]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0023]图1为本申请实施例提供的液晶显示装置的剖视图。\n\n[0024]图2(a)为本申请实施例提供的液晶显示装置的第一种俯视图。\n\n[0025]图2(b)为本申请实施例提供的液晶显示装置的第二种俯视图。\n\n[0026]图3为本申请实施例提供的液晶显示装置的第一种结构的剖视图。\n\n[0027]图4为本申请实施例提供的第二背光组件的第一种结构的俯视图。\n\n[0028]图5为本申请实施例提供的液晶显示装置的第二种结构的剖视图。\n\n[0029]图6为本申请实施例提供的第二背光组件的第二种结构的俯视图。\n\n[0030]图7为本申请实施例提供的液晶显示装置的第三种结构的剖视图。\n\n[0031]图8为本申请实施例提供的第二背光组件的第三种结构的俯视图。\n\n[0032]图9为本申请实施例提供的调光液晶片的结构示意图。\n\n[0033]图10(a)为本申请实施例提供的第二背光组件的调光液晶片和电路板粘贴的调光液晶片和导电胶的剖视图。\n\n[0034]图10(b)为本申请实施例提供的第二背光组件的调光液晶片和电路板粘贴的调光液晶片和导电胶的俯视图。\n\n[0035]图10(c)为本申请实施例提供的第二背光组件的调光液晶片和电路板粘贴的电路板和导电胶的俯视图。\n\n具体实施方式\n\n[0036]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0037]图1为本申请实施例提供的液晶显示装置的剖视图，图2(a)为本申请实施例提供的液晶显示装置的第一种俯视图，图2(b)为本申请实施例提供的液晶显示装置的第二种俯视图，如图1，以及图2(a)或图2(b)所示，该液晶显示装置1包括：\n\n[0038]液晶显示面板10，液晶显示面板10的显示区内定义有感光区域101；\n\n[0039]第一背光组件20，位于液晶显示面板10的一侧，第一背光组件20中形成有透光孔201，透光孔201与感光区域101对应设置；以及，\n\n[0040]第二背光组件30，位于第一背光组件20的远离所述液晶显示面板的一侧，第二背光组件30与透光孔201对应设置。\n\n[0041]结合图3～图8对于第二背光组件30的三种举例结构，第二背光组件30包括调光液晶片301、发光元件302和电路板303；电路板303用于控制发光元件302发光以及调光液晶片301处于透明状态或雾化状态，电路板303上设有与透光孔201相对设置的通孔3031，通孔3031的孔径不小于透光孔201的孔径。其中，调光液晶片301和电路板303层叠设置并通过粘贴的方式电性连接，电路板303上设有与透光孔201相对设置的通孔3031，通孔3031的孔径不小于透光孔201的孔径。\n\n[0042]具体地，在液晶显示面板10对应于透光孔201的感光区域101需要使外界环境光穿过(例如液晶显示面板进行前置摄像头照相、摄像，或者屏下指纹识别等)时，电路板303使调光液晶片301处于透明状态并使外界环境光经过液晶显示面板10、第一背光组件20的透光孔201、第二背光组件30的调光液晶片301和电路板303的通孔3031(或者是先经过电路板303的通孔3031再经过第二背光组件20的调光液晶片301)入射到第二背光组件30远离第一背光组件20的远离所述液晶显示面板的一侧，需要说明的是，此时电路板303无需使发光元件302发光，否则可能会对拍摄功能和指纹识别造成不良影响，且此时调光液晶片301处于透明状态，也不能起到导光作用；另外，在液晶显示面板10对应于透光孔201的感光区域101需要进行显示时，电路板303使调光液晶片301处于雾化状态并使发光元件302发光而提供补偿面光源，此时，调光液晶片301作为导光板将补偿面光源为感光区域101提供背光。\n\n[0043]需要说明的是，图2(a)或图2(b)中的整块区域为液晶显示面板10，液晶显示面板10中去掉第二背光组件30的部分为第一背光组件20。其中，图2(a)为感光区域101使外界环境光穿过时用于前置摄像头照相、摄像的情况对应的液晶显示装置1的俯视图，图2(b)为感光区域101使外界环境光穿过时用于屏下指纹识别的情况对应的液晶显示装置1的俯视图。\n\n[0044]进一步地，为了使外界环境光经过液晶显示面板10和透光孔201的下出光面后顺利入射到第二背光组件30的下方，电路板303对应于透光孔201的位置设有通孔3031，且该通孔3031的孔径应该比透光孔201的孔径大，这样才能使外界环境光充分传播到第二背光组件30的下方。\n\n[0045]由此，本申请实施例提供的液晶显示装置1在透光孔201对应的感光区域101兼顾图像采集功能(或屏下指纹识别功能)和屏幕显示功能，从而实现了真正的全面屏技术。同时，第二背光组件20的调光液晶片301和电路板303层叠设置并通过粘贴的方式电性连接，而无需通过外接电线或者焊接等传统方式来电性连接，能使得第二背光组件20的结构简单，实现超薄设计。\n\n[0046]可以理解的是，液晶显示装置1工作时，液晶显示装置1在第二背光组件20的背光侧且对应于透光孔201处还设有感光元件(附图中未示出)，感光元件为前置摄像头或屏下传感器。\n\n[0047]需要说明的是，为了使感光区域101用于显示时，发光元件302发光提供的补偿面光源时不会影响感光区域101显示画面，发光元件302一般不设置在正对于透光孔201的位置。\n\n[0048]还需要说明的是，调光液晶片301和发光元件302设于电路板303的同一侧，调光液晶片301和发光元件302同时设于电路板303的上方或下方。另外，可以理解的是，为了便于发光元件302的设置，电路板303的面积一般大于调光液晶片301的面积。下面给出第二背光组件30的三种举例结构并进行相关说明。\n\n[0049]图3为本申请实施例提供的液晶显示装置的第一种结构的剖视图，图4为本申请实施例提供的第二背光组件的第一种结构的俯视图，图4的第二背光组件对应于图3的液晶显示装置的第一种结构中的第二背光组件，图4中的实线表示部件在上方，虚线表示部件在下方，如图3和图4所示，调光液晶片301和发光元件302在上方，电路板303在下方，且发光元件302设于调光液晶片301与电路板303之间，发光元件302包括多个发光二极管LED，多个发光二极管LED围绕通孔3031设置，由于通孔3031的孔径不小于透光孔201的孔径，因此发光二极管LED不会正对着透光孔201的区域，透光孔201对应的液晶显示面板10的区域用于显示时，发光二极管LED不会很刺眼。\n\n[0050]需要说明的是，由于发光元件302发光时的补偿面光源需要通过调光液晶片301进行导光，因此当发光元件302和调光液晶片301均处于电路板303的下方时，发光元件302不能设于调光液晶片301与电路板303之间，否则调光液晶片301无法将补偿面光源导入透光孔201。\n\n[0051]图5为本申请实施例提供的第二背光组件的第二种结构的剖视图，图6为本申请实施例提供的第二背光组件的第二种结构的俯视图，图6中的实线表示部件在上方，虚线表示部件在下方，图6的第二背光组件对应于图5的液晶显示装置的第二种结构中的第二背光组件，如图5和图6所示，调光液晶片301和发光元件302在上方，电路板303在下方，且发光元件302与调光液晶片301处于同一层，发光元件302包括多个发光二极管LED，多个发光二极管LED围绕调光液晶片301设置，发光二极管LED通过侧入式方式为透光孔201提供补偿面光源。\n\n[0052]图7为本申请实施例提供的第二背光组件的第三种结构的剖视图，图8为本申请实施例提供的第二背光组件的第三种结构的俯视图，图8的第二背光组件对应于图7的液晶显示装置的第三种结构中的第二背光组件，图8中的实线表示部件在上方，虚线表示部件在下方，如图7和图8所示，电路板303在上方，调光液晶片301和发光元件302在下方，且发光元件302与调光液晶片301处于同一层，发光元件302包括多个发光二极管LED，多个发光二极管LED围绕调光液晶片301设置，发光二极管LED通过侧入式方式为透光孔201提供补偿面光源。\n\n[0053]需要说明的是，第一种结构的发光二极管LED处于调光液晶片301的下方且围绕调光液晶片301设置，因此相比于第二种结构和第三种结构的发光LED和调光液晶片301处于同一层的侧入式背光方式，第二种结构和第三种结构比第一种结构向透光孔201所提供的补偿面光源更加充分和均匀，因此第二种结构和第三种结构的实际显示效果要优于第一种结构。\n\n[0054]可以理解的是，图3～图8仅为示例，发光二极管LED的具体数量和具体分布位置可以根据实际情况进行调整，此处不做限定。\n\n[0055]调光液晶片301是一种聚合物分散液晶薄膜，属于功能性光电薄膜，通过对调光液晶片301施加电压，可以使其在透明和雾化状态(接近于磨砂效果)之间转换，透明度由电压调节。\n\n[0056]具体地，若调光液晶片301为正向调光液晶片301，则当电路板303向第一透明基板3011和第二透明基板3012施加电压时调光液晶片301为透明状态，当第一透明基板3011和第二透明基板3012不施加电压时调光液晶片301为雾化状态；若调光液晶片301为反向调光液晶片301，则当电路板303向第一透明基板3011和第二透明基板3012施加电压时调光液晶片301为雾化状态，当第一透明基板3011和第二透明基板3012不施加电压时调光液晶片301为透明状态。雾化状态的雾化程度由所施加的电压大小决定，施加的电压越大，雾化程度越高。\n\n[0057]图9为本申请实施例提供的调光液晶片的结构示意图，如图9所示，调光液晶片301包括相对设置第一透明基板3011和第二透明基板3012，第一透明基板3011和第二透明基板3012之间设置有液晶微粒3015，第一透明基板3011和第二透明基板3012面向液晶微粒3015的一侧分别设有电极层，将第一透明基板3011的电极层称作第一电极层3013，第二透明基板3012的电极层称作第二电极层3014，第一透明基板3011和第二透明基板3012将第一电极层3013、液晶微粒3015和第二透明基板3012形成整体的调光液晶片301，液晶微粒3015的材料可以选择聚合物分散液晶材料或聚合物网络液晶材料；电路板303分别连接第一电极层3013和第二电极层3014，并为第一电极层3013和第二电极层3014提供正极电位和负极电位而使得液晶微粒3015发生偏转，以使得调光液晶片301为雾化状态或透明状态。\n\n[0058]可以理解的是，为了进一步减小第二背光组件30的厚度和重量，提高第二背光组件30的散热，第二背光组件30中的电路板303可采用柔性电路板303，由聚酰亚胺或聚酯薄膜材料制成。这样，调光液晶片301和电路板303之间可通过导电胶粘结，优选地，导电胶采用透明材料制成。\n\n[0059]在一个实施例中，以调光液晶片301设于电路板303的上方为例，图10(a)为本申请实施例提供的第二背光组件的调光液晶片和电路板粘贴的调光液晶片和导电胶的剖视图，图10(b)为本申请实施例提供的第二背光组件30的调光液晶片和电路板粘贴的调光液晶片和导电胶的俯视图，图10(c)为本申请实施例提供的第二背光组件的调光液晶片和电路板粘贴的电路板和导电胶的俯视图，如图10(a)、图10(b)和图10(c)所示，将调光液晶片301的第一透明基板3011和第二透明基板3012相对交错设置，即在垂直投影上，第一透明基板3011和第二透明基板3012均存在未被对方覆盖的区域，第一透明基板3011未被第二透明基板3012覆盖的区域设有缺口3018，需要强调的是，缺口3018用于将导电胶从第一透明基板3011的电极层引出，以方便第一电极层3013和电路板303粘贴。\n\n[0060]具体地，第一透明基板3011未被第二透明基板3012覆盖的区域粘贴有第一导电胶3016，第一导电胶3016通过缺口3018与电路板303的第一焊条3032连接；第二透明基板3012未被第一透明基板3011覆盖的区域粘贴有第二导电胶3017，第二导电胶3017与电路板303的第二焊条3033连接。其中，电路板303通过引线连接主板，从而由主板通过引线向电路板303的第一焊条3032和第二焊条3033分别提供正极电压和负极电压。\n\n[0061]通过上述粘贴方式，导电胶能处于调光液晶片301和电路板303之间，即不会额外增加第二背光组件30的厚度，使第二背光组件30形成超薄设计，占用空间较小。可以理解的是，为了使导电胶将调光液晶片301和电路板303粘贴牢固，导电胶的厚度不小于调光液晶片301的厚度的一半。\n\n[0062]需要说明的是，电路板303还提供了引线3034与外接主板(如图2(a)和图2(b)所示)连接，电路板303通过外接主板向第一透明基板3011和第二透明基板3012引入正极电位和负极电位。\n\n[0063]另外，第二背光组件30还包括中空塑胶框(附图中未示出)，中空塑胶框用于将调光液晶片301、发光元件302和电路板303固定为整体。\n\n[0064]需要说明的是，第二背光组件30的调光液晶片301、电路板303和中空塑胶框的形状并不限定，可以为方形、圆形、三角形等，只要使第二背光组件30和第一背光组件20以及其所应用的液晶显示装置1的形状相匹配即可。\n\n[0065]进一步地，第二背光组件30中还可以增加反射片、扩散片、棱镜片等光学膜片，以提高外界环境光或补偿面光源的照射和分布效果。\n\n[0066]可以理解的是，为了使第二背光组件30处于透明状态，调光液晶片301处于透明状态时，外界环境光能顺利入射到图像采集装置，透光孔201对应的液晶显示面板10的区域的像素密度较小，即像素分布较为稀疏。\n\n[0067]本申请实施例提供的液晶显示装置1，通过根据感光区域101是进行图像采集或屏下指纹识别，还是进行图像显示，控制第二背光模组30通过电路板303控制调光液晶片301处于透明状态还是雾化状态，以及使发光元件302发光还是不发光以对透光孔对应的液晶显示装置区域是否提供补偿面光源，具体为：当感光区域101进行图像采集或屏下指纹识别时，电路板303控制调光液晶片301处于透明状态且发光元件302不发光，使外界环境光经过液晶显示面板10、第一背光模组20的透光孔201的下出光面和第二背光组件30入射到第二背光组件30远离第一背光组件20的远离所述液晶显示面板的一侧；当感光区域101进行图像显示时，电路板303控制调光液晶片301处于雾化状态且发光元件302发光提供补偿面光源，补偿面光源经调光液晶片301进行导光后经过第一背光模组20的透光孔201的上出光面入射到透光孔201对应的感光区域101，以使得透光孔201对应的液晶显示面板10的感光区域101也能如液晶显示面板10对应于透光孔201以外的区域一样进行正常显示，从而使液晶显示面板10在透光孔201对应的区域兼顾图像采集功能(或屏下指纹识别功能)和屏幕显示功能，由此实现了真正的全面屏技术。\n\n[0068]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0069]以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种液晶显示装置。\n\n背景技术\n\n[0002]随着显示技术的不断发展，全面屏由于优良的显示效果和外观，成为当前显示装置的热门趋势。其中，在显示装置的背光模组内进行挖孔设计，在挖孔内设置前置摄像头，由于可以将前置摄像头放置在屏幕内部，比起“刘海屏”或“水滴屏”能进一步提高屏占比，因此挖孔设计越来越受到人们关注。\n\n[0003]然而，现有的显示装置的背光模组的挖孔通常为胶铁一体结构或纯铁框结构，需由框胶与铁框相互贴合成一体形成挖孔，或由铁框弯折形成背光框，因此挖孔内没有专门的光源提供，使得挖孔内部的光线较暗或几乎没有光线，导致挖孔对应的显示面板区域难以正常显示画面，仅仅只能作为外界环境光的接收通道，也就是说，目前的显示装置的前置摄像头区域仅仅只能作为拍照使用，而不能实现较好的显示功能，这并不是真正意义上的全面屏技术。\n\n[0004]由此可知，如何使得前置摄像头区域既能实现拍照功能，又能实现显示功能，是实现真正全面屏技术的关键，因此有必要提出一种显示装置，以解决目前由于挖孔内没有专门的光源而使得前置摄像头区域仅能拍照而难以实现较好的显示功能的问题。\n\n发明内容\n\n[0005]为了解决目前由于挖孔内没有专门的光源而使得前置摄像头区域仅能拍照而难以实现较好的显示功能的问题，本申请提供一种液晶显示装置，包括：\n\n[0006]液晶显示面板；\n\n[0007]第一背光组件，位于所述液晶显示面板的一侧，所述第一背光组件中形成有透光孔，所述透光孔与所述感光区域对应设置；以及，\n\n[0008]第二背光组件，位于所述第一背光组件的远离所述液晶显示面板的一侧，所述第二背光组件与所述透光孔对应设置；\n\n[0009]所述第二背光组件包括调光液晶片、发光元件和电路板，所述电路板用于控制所述发光元件发光以及所述调光液晶片处于透明状态或雾化状态，若所述调光液晶片为透明状态，则外界环境光通过所述感光区域入射到所述第二背光组件的远离所述液晶显示面板的一侧；若所述调光液晶片为雾化状态，则所述调光液晶片与所述发光元件配合构成补偿面光源，为所述感光区域的显示提供背光；\n\n[0010]其中，所述调光液晶片和所述电路板层叠设置并通过粘贴的方式电性连接，所述电路板上设有与所述透光孔相对设置的通孔，所述通孔的孔径不小于所述透光孔的孔径。\n\n[0011]在一些实施例中，所述调光液晶片包括相对设置的第一透明基板和第二透明基板，所述第一透明基板层和所述第二透明基板之间设置有液晶微粒；所述第一透明基板和所述第二透明基板面向所述液晶微粒的一侧分别设有电极层，所述电路板分别为所述第一透明基板的电极层和所述第二透明基板的电极层提供正极电位和负极电位。\n\n[0012]在一些实施例中，所述第一透明基板和所述第二透明基板交错设置且在垂直投影上均有未被对方覆盖的区域，所述第一透明基板未被所述第二透明电极层覆盖的区域设有缺口；所述第一透明基板在未被所述第二透明基板覆盖的区域粘贴有第一导电胶，所述第一导电胶通过所述缺口与所述电路板粘结；所述第二透明基板在未被所述第一透明基板覆盖的区域粘贴有第二导电胶，所述第二导电胶与所述电路板粘贴。\n\n[0013]在一些实施例中，所述第一导电胶粘贴于所述第一透明基板的电极层，所述第二导电胶粘贴于所述第二透明基板的电极层。\n\n[0014]在一些实施例中，所述调光液晶片、所述发光元件和所述电路板由上至下依次设置，所述发光元件包括多个发光二极管，多个所述发光二极管围绕所述通孔设置。\n\n[0015]在一些实施例中，所述发光元件与所述调光液晶片处于同一层，所述发光元件包括多个发光二极管，多个发光二极管围绕所述调光液晶片设置。\n\n[0016]在一些实施例中，所述发光元件和所述调光液晶片处于所述电路板的上方，或所述发光元件和所述调光液晶片处于所述电路板的下方。\n\n[0017]在一些实施例中，若所述调光液晶片为正向调光液晶片，则所述第一透明基板的电极层和所述第二透明基板的电极层施加电压时，所述调光液晶片为透明状态；所述第一透明基板的电极层和所述第二透明基板的电极层不施加电压时，所述调光液晶片为雾化状态；若所述调光液晶片为反向调光液晶片，则所述第一透明基板的电极层和所述第二透明基本的电极层施加电压时，所述调光液晶片为雾化状态；所述第一透明的电极层和所述第二透明的电极层不施加电压时，所述调光液晶片为透明状态。\n\n[0018]在一些实施例中，所述液晶微粒的材料为聚合物分散液晶材料或聚合物网络液晶材料。\n\n[0019]在一些实施例中，所述第二背光组件还包括中空塑胶框，所述中空塑胶框用于将所述调光液晶片、发光元件和电路板固定为整体。\n\n[0020]本申请实施例提供一种液晶显示装置，包括由上至下依次层叠设置的液晶显示面板、第一背光组件、第二背光组件，其中，第一背光组件设有透光孔，第二背光组件相对于透光孔设置，第二背光组件包括调光液晶片、发光元件和电路板，电路板上设有与透光孔相对设置且孔径大于透光孔孔径的通孔。\n\n[0021]当液晶显示面板对应于透光孔的感光区域需要使外界环境光穿过时，电路板使调光液晶片处于透明状态并使外界环境光经过液晶显示面板、第一背光组件的透光孔、第二背光组件的调光液晶片和电路板的通孔(或者是先经过电路板的通孔再经过第二背光组件的调光液晶片)入射到第二背光组件远离第一背光组件的背侧；而当液晶显示面板对应于透光孔的区域需要进行显示时，电路板使调光液晶片处于雾化状态并使发光元件发光而提供补偿面光源，补偿面光源经过调光液晶片导光入射到透光孔对应的感光区域。由此，该液晶显示装置在透光孔对应的感光区域兼顾图像采集功能(或屏下指纹识别功能)和屏幕显示功能，从而实现了真正的全面屏技术。同时，第二背光组件的调光液晶片和电路板层叠设置并通过粘贴的方式电性连接，能使得第二背光组件的结构简单，实现超薄设计。\n\n附图说明\n\n[0022]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0023]图1为本申请实施例提供的液晶显示装置的剖视图。\n\n[0024]图2(a)为本申请实施例提供的液晶显示装置的第一种俯视图。\n\n[0025]图2(b)为本申请实施例提供的液晶显示装置的第二种俯视图。\n\n[0026]图3为本申请实施例提供的液晶显示装置的第一种结构的剖视图。\n\n[0027]图4为本申请实施例提供的第二背光组件的第一种结构的俯视图。\n\n[0028]图5为本申请实施例提供的液晶显示装置的第二种结构的剖视图。\n\n[0029]图6为本申请实施例提供的第二背光组件的第二种结构的俯视图。\n\n[0030]图7为本申请实施例提供的液晶显示装置的第三种结构的剖视图。\n\n[0031]图8为本申请实施例提供的第二背光组件的第三种结构的俯视图。\n\n[0032]图9为本申请实施例提供的调光液晶片的结构示意图。\n\n[0033]图10(a)为本申请实施例提供的第二背光组件的调光液晶片和电路板粘贴的调光液晶片和导电胶的剖视图。\n\n[0034]图10(b)为本申请实施例提供的第二背光组件的调光液晶片和电路板粘贴的调光液晶片和导电胶的俯视图。\n\n[0035]图10(c)为本申请实施例提供的第二背光组件的调光液晶片和电路板粘贴的电路板和导电胶的俯视图。\n\n具体实施方式\n\n[0036]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0037]图1为本申请实施例提供的液晶显示装置的剖视图，图2(a)为本申请实施例提供的液晶显示装置的第一种俯视图，图2(b)为本申请实施例提供的液晶显示装置的第二种俯视图，如图1，以及图2(a)或图2(b)所示，该液晶显示装置1包括：\n\n[0038]液晶显示面板10，液晶显示面板10的显示区内定义有感光区域101；\n\n[0039]第一背光组件20，位于液晶显示面板10的一侧，第一背光组件20中形成有透光孔201，透光孔201与感光区域101对应设置；以及，\n\n[0040]第二背光组件30，位于第一背光组件20的远离所述液晶显示面板的一侧，第二背光组件30与透光孔201对应设置。\n\n[0041]结合图3～图8对于第二背光组件30的三种举例结构，第二背光组件30包括调光液晶片301、发光元件302和电路板303；电路板303用于控制发光元件302发光以及调光液晶片301处于透明状态或雾化状态，电路板303上设有与透光孔201相对设置的通孔3031，通孔3031的孔径不小于透光孔201的孔径。其中，调光液晶片301和电路板303层叠设置并通过粘贴的方式电性连接，电路板303上设有与透光孔201相对设置的通孔3031，通孔3031的孔径不小于透光孔201的孔径。\n\n[0042]具体地，在液晶显示面板10对应于透光孔201的感光区域101需要使外界环境光穿过(例如液晶显示面板进行前置摄像头照相、摄像，或者屏下指纹识别等)时，电路板303使调光液晶片301处于透明状态并使外界环境光经过液晶显示面板10、第一背光组件20的透光孔201、第二背光组件30的调光液晶片301和电路板303的通孔3031(或者是先经过电路板303的通孔3031再经过第二背光组件20的调光液晶片301)入射到第二背光组件30远离第一背光组件20的远离所述液晶显示面板的一侧，需要说明的是，此时电路板303无需使发光元件302发光，否则可能会对拍摄功能和指纹识别造成不良影响，且此时调光液晶片301处于透明状态，也不能起到导光作用；另外，在液晶显示面板10对应于透光孔201的感光区域101需要进行显示时，电路板303使调光液晶片301处于雾化状态并使发光元件302发光而提供补偿面光源，此时，调光液晶片301作为导光板将补偿面光源为感光区域101提供背光。\n\n[0043]需要说明的是，图2(a)或图2(b)中的整块区域为液晶显示面板10，液晶显示面板10中去掉第二背光组件30的部分为第一背光组件20。其中，图2(a)为感光区域101使外界环境光穿过时用于前置摄像头照相、摄像的情况对应的液晶显示装置1的俯视图，图2(b)为感光区域101使外界环境光穿过时用于屏下指纹识别的情况对应的液晶显示装置1的俯视图。\n\n[0044]进一步地，为了使外界环境光经过液晶显示面板10和透光孔201的下出光面后顺利入射到第二背光组件30的下方，电路板303对应于透光孔201的位置设有通孔3031，且该通孔3031的孔径应该比透光孔201的孔径大，这样才能使外界环境光充分传播到第二背光组件30的下方。\n\n[0045]由此，本申请实施例提供的液晶显示装置1在透光孔201对应的感光区域101兼顾图像采集功能(或屏下指纹识别功能)和屏幕显示功能，从而实现了真正的全面屏技术。同时，第二背光组件20的调光液晶片301和电路板303层叠设置并通过粘贴的方式电性连接，而无需通过外接电线或者焊接等传统方式来电性连接，能使得第二背光组件20的结构简单，实现超薄设计。\n\n[0046]可以理解的是，液晶显示装置1工作时，液晶显示装置1在第二背光组件20的背光侧且对应于透光孔201处还设有感光元件(附图中未示出)，感光元件为前置摄像头或屏下传感器。\n\n[0047]需要说明的是，为了使感光区域101用于显示时，发光元件302发光提供的补偿面光源时不会影响感光区域101显示画面，发光元件302一般不设置在正对于透光孔201的位置。\n\n[0048]还需要说明的是，调光液晶片301和发光元件302设于电路板303的同一侧，调光液晶片301和发光元件302同时设于电路板303的上方或下方。另外，可以理解的是，为了便于发光元件302的设置，电路板303的面积一般大于调光液晶片301的面积。下面给出第二背光组件30的三种举例结构并进行相关说明。\n\n[0049]图3为本申请实施例提供的液晶显示装置的第一种结构的剖视图，图4为本申请实施例提供的第二背光组件的第一种结构的俯视图，图4的第二背光组件对应于图3的液晶显示装置的第一种结构中的第二背光组件，图4中的实线表示部件在上方，虚线表示部件在下方，如图3和图4所示，调光液晶片301和发光元件302在上方，电路板303在下方，且发光元件302设于调光液晶片301与电路板303之间，发光元件302包括多个发光二极管LED，多个发光二极管LED围绕通孔3031设置，由于通孔3031的孔径不小于透光孔201的孔径，因此发光二极管LED不会正对着透光孔201的区域，透光孔201对应的液晶显示面板10的区域用于显示时，发光二极管LED不会很刺眼。\n\n[0050]需要说明的是，由于发光元件302发光时的补偿面光源需要通过调光液晶片301进行导光，因此当发光元件302和调光液晶片301均处于电路板303的下方时，发光元件302不能设于调光液晶片301与电路板303之间，否则调光液晶片301无法将补偿面光源导入透光孔201。\n\n[0051]图5为本申请实施例提供的第二背光组件的第二种结构的剖视图，图6为本申请实施例提供的第二背光组件的第二种结构的俯视图，图6中的实线表示部件在上方，虚线表示部件在下方，图6的第二背光组件对应于图5的液晶显示装置的第二种结构中的第二背光组件，如图5和图6所示，调光液晶片301和发光元件302在上方，电路板303在下方，且发光元件302与调光液晶片301处于同一层，发光元件302包括多个发光二极管LED，多个发光二极管LED围绕调光液晶片301设置，发光二极管LED通过侧入式方式为透光孔201提供补偿面光源。\n\n[0052]图7为本申请实施例提供的第二背光组件的第三种结构的剖视图，图8为本申请实施例提供的第二背光组件的第三种结构的俯视图，图8的第二背光组件对应于图7的液晶显示装置的第三种结构中的第二背光组件，图8中的实线表示部件在上方，虚线表示部件在下方，如图7和图8所示，电路板303在上方，调光液晶片301和发光元件302在下方，且发光元件302与调光液晶片301处于同一层，发光元件302包括多个发光二极管LED，多个发光二极管LED围绕调光液晶片301设置，发光二极管LED通过侧入式方式为透光孔201提供补偿面光源。\n\n[0053]需要说明的是，第一种结构的发光二极管LED处于调光液晶片301的下方且围绕调光液晶片301设置，因此相比于第二种结构和第三种结构的发光LED和调光液晶片301处于同一层的侧入式背光方式，第二种结构和第三种结构比第一种结构向透光孔201所提供的补偿面光源更加充分和均匀，因此第二种结构和第三种结构的实际显示效果要优于第一种结构。\n\n[0054]可以理解的是，图3～图8仅为示例，发光二极管LED的具体数量和具体分布位置可以根据实际情况进行调整，此处不做限定。\n\n[0055]调光液晶片301是一种聚合物分散液晶薄膜，属于功能性光电薄膜，通过对调光液晶片301施加电压，可以使其在透明和雾化状态(接近于磨砂效果)之间转换，透明度由电压调节。\n\n[0056]具体地，若调光液晶片301为正向调光液晶片301，则当电路板303向第一透明基板3011和第二透明基板3012施加电压时调光液晶片301为透明状态，当第一透明基板3011和第二透明基板3012不施加电压时调光液晶片301为雾化状态；若调光液晶片301为反向调光液晶片301，则当电路板303向第一透明基板3011和第二透明基板3012施加电压时调光液晶片301为雾化状态，当第一透明基板3011和第二透明基板3012不施加电压时调光液晶片301为透明状态。雾化状态的雾化程度由所施加的电压大小决定，施加的电压越大，雾化程度越高。\n\n[0057]图9为本申请实施例提供的调光液晶片的结构示意图，如图9所示，调光液晶片301包括相对设置第一透明基板3011和第二透明基板3012，第一透明基板3011和第二透明基板3012之间设置有液晶微粒3015，第一透明基板3011和第二透明基板3012面向液晶微粒3015的一侧分别设有电极层，将第一透明基板3011的电极层称作第一电极层3013，第二透明基板3012的电极层称作第二电极层3014，第一透明基板3011和第二透明基板3012将第一电极层3013、液晶微粒3015和第二透明基板3012形成整体的调光液晶片301，液晶微粒3015的材料可以选择聚合物分散液晶材料或聚合物网络液晶材料；电路板303分别连接第一电极层3013和第二电极层3014，并为第一电极层3013和第二电极层3014提供正极电位和负极电位而使得液晶微粒3015发生偏转，以使得调光液晶片301为雾化状态或透明状态。\n\n[0058]可以理解的是，为了进一步减小第二背光组件30的厚度和重量，提高第二背光组件30的散热，第二背光组件30中的电路板303可采用柔性电路板303，由聚酰亚胺或聚酯薄膜材料制成。这样，调光液晶片301和电路板303之间可通过导电胶粘结，优选地，导电胶采用透明材料制成。\n\n[0059]在一个实施例中，以调光液晶片301设于电路板303的上方为例，图10(a)为本申请实施例提供的第二背光组件的调光液晶片和电路板粘贴的调光液晶片和导电胶的剖视图，图10(b)为本申请实施例提供的第二背光组件30的调光液晶片和电路板粘贴的调光液晶片和导电胶的俯视图，图10(c)为本申请实施例提供的第二背光组件的调光液晶片和电路板粘贴的电路板和导电胶的俯视图，如图10(a)、图10(b)和图10(c)所示，将调光液晶片301的第一透明基板3011和第二透明基板3012相对交错设置，即在垂直投影上，第一透明基板3011和第二透明基板3012均存在未被对方覆盖的区域，第一透明基板3011未被第二透明基板3012覆盖的区域设有缺口3018，需要强调的是，缺口3018用于将导电胶从第一透明基板3011的电极层引出，以方便第一电极层3013和电路板303粘贴。\n\n[0060]具体地，第一透明基板3011未被第二透明基板3012覆盖的区域粘贴有第一导电胶3016，第一导电胶3016通过缺口3018与电路板303的第一焊条3032连接；第二透明基板3012未被第一透明基板3011覆盖的区域粘贴有第二导电胶3017，第二导电胶3017与电路板303的第二焊条3033连接。其中，电路板303通过引线连接主板，从而由主板通过引线向电路板303的第一焊条3032和第二焊条3033分别提供正极电压和负极电压。\n\n[0061]通过上述粘贴方式，导电胶能处于调光液晶片301和电路板303之间，即不会额外增加第二背光组件30的厚度，使第二背光组件30形成超薄设计，占用空间较小。可以理解的是，为了使导电胶将调光液晶片301和电路板303粘贴牢固，导电胶的厚度不小于调光液晶片301的厚度的一半。\n\n[0062]需要说明的是，电路板303还提供了引线3034与外接主板(如图2(a)和图2(b)所示)连接，电路板303通过外接主板向第一透明基板3011和第二透明基板3012引入正极电位和负极电位。\n\n[0063]另外，第二背光组件30还包括中空塑胶框(附图中未示出)，中空塑胶框用于将调光液晶片301、发光元件302和电路板303固定为整体。\n\n[0064]需要说明的是，第二背光组件30的调光液晶片301、电路板303和中空塑胶框的形状并不限定，可以为方形、圆形、三角形等，只要使第二背光组件30和第一背光组件20以及其所应用的液晶显示装置1的形状相匹配即可。\n\n[0065]进一步地，第二背光组件30中还可以增加反射片、扩散片、棱镜片等光学膜片，以提高外界环境光或补偿面光源的照射和分布效果。\n\n[0066]可以理解的是，为了使第二背光组件30处于透明状态，调光液晶片301处于透明状态时，外界环境光能顺利入射到图像采集装置，透光孔201对应的液晶显示面板10的区域的像素密度较小，即像素分布较为稀疏。\n\n[0067]本申请实施例提供的液晶显示装置1，通过根据感光区域101是进行图像采集或屏下指纹识别，还是进行图像显示，控制第二背光模组30通过电路板303控制调光液晶片301处于透明状态还是雾化状态，以及使发光元件302发光还是不发光以对透光孔对应的液晶显示装置区域是否提供补偿面光源，具体为：当感光区域101进行图像采集或屏下指纹识别时，电路板303控制调光液晶片301处于透明状态且发光元件302不发光，使外界环境光经过液晶显示面板10、第一背光模组20的透光孔201的下出光面和第二背光组件30入射到第二背光组件30远离第一背光组件20的远离所述液晶显示面板的一侧；当感光区域101进行图像显示时，电路板303控制调光液晶片301处于雾化状态且发光元件302发光提供补偿面光源，补偿面光源经调光液晶片301进行导光后经过第一背光模组20的透光孔201的上出光面入射到透光孔201对应的感光区域101，以使得透光孔201对应的液晶显示面板10的感光区域101也能如液晶显示面板10对应于透光孔201以外的区域一样进行正常显示，从而使液晶显示面板10在透光孔201对应的区域兼顾图像采集功能(或屏下指纹识别功能)和屏幕显示功能，由此实现了真正的全面屏技术。\n\n[0068]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0069]以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10895, 23949, '技术领域\n\n[0001]本申请涉及一种显示器技术领域，尤其涉及一种mini-LED装置及制作方法。\n\n背景技术\n\n[0002]随着可穿戴应用设备如智能眼镜、智能手表等的逐渐兴起，显示行业对可挠曲显示器件的需求也不断增加。有机发光二极管显示器件(Organic Light Emitting Display,简称OLED)具有自发光不需背光源、厚度薄、视角广、反应速度快等特点，从而具有可挠曲显示的天然优势。面对柔性OLED的竞争，传统的液晶显示技术也逐渐采用柔性衬底往柔性、曲面等方向进行突破，由此可见，柔性、曲面显示的时代即将来临。且有机发光二极管主要有可自主发光，可设置柔性屏，发光效率高，响应时间快等优点。但是由于OLED生产成本比较高，OLED材料的寿命短，以及OLED屏幕还会出现烧屏的现象。因此目前行业正在大力发展mini-LED技术。\n\n[0003]随着面板显示行业的发展，面板制造技术将朝着更低的成本、更高的发光效率的方向行进。\n\n[0004]LCD配合Mini-LED局部调光的背光技术因为如下优势已成为挑战OLED显示的一项技术：\n\n[0005]亮度更高，LCD配合Mini-LED可以实现大于1000nits的超高亮度，通过区域调控电流，亮太画面可提高数倍，高于OLED的显示亮度；\n\n[0006]寿命更长，OLED材料寿命比LED寿命短，特别是蓝色OLED材料的显示寿命仍远低于其它颜色材料，长期工作会出现因蓝色发光下降导致的偏色；\n\n[0007]不会“烧屏”，OLED如部分像素长期工作于高亮度情况，会出现“烧屏”现象，而Mini-LED不存在此现象；\n\n[0008]功耗更低：同等发光亮度下，LCD配合Mini-LED的功耗是OLED显示屏的70％～80％；\n\n[0009]成本更低：LCD配合Mini-LED的成本大约是OLED显示屏的70％(小尺寸)；\n\n[0010]可靠性和环境适应性更高：OLED材料需要严格的阻水氧封装，且在较高温度条件下工作更易衰减，Mini-LED为无机半导体材料发光，具有更好的可靠性。\n\n[0011]在mini LED的传统技术中，mini LED背板工艺完成后，需要利用钢网涂敷白油以提升LED的反射率，但是白油工艺不使用mask,patten的制作粗糙，精准度差，厚度均一性控制不佳。\n\n发明内容\n\n[0012]为了克服现有技术的不足，本申请实施例提供一种mini-LED装置及制作方法，即在mini-LED背板工艺制作完成以后制作绝缘层以及反射膜，反射膜起到反射LED光，提升光效的膜层，后续继续制作透明保护层。\n\n[0013]本发明实施例提供了一种mini-LED装置，所述mini-LED装置分为绑定区、TFT区和表面贴合区，所述mini-LED装置包括：\n\n[0014]衬底基板；\n\n[0015]TFT器件，所述TFT器件位于所述衬底基板上；\n\n[0016]绝缘层，所述绝缘层设置在所述TFT器件上；\n\n[0017]金属反射膜，所述金属反射膜设置在所述绝缘层上；\n\n[0018]mini-LED芯片，所述mini-LED芯片贴合在所述表面贴合区处；\n\n[0019]透明保护层，所述透明保护层覆盖所述金属反射膜以及所述mini-LED芯片。\n\n[0020]根据本发明实施例所提供的mini-LED装置，所述TFT器件包括：\n\n[0021]第一金属层，所述第一金属层设置在所述衬底基板上，在所述绑定区、所述TFT区及所述表面贴合区均设置有所述第一金属层；\n\n[0022]栅极绝缘层，所述栅极绝缘层覆盖除所述表面贴合区处的所述第一金属层外的所有所述第一金属层；\n\n[0023]金属氧化物层，所述金属氧化物层位于所述栅极绝缘层上；\n\n[0024]刻蚀阻挡层，所述刻蚀阻挡层覆盖所述金属氧化物层；\n\n[0025]第二金属层，位于所述绑定区的所述第二金属层通过通孔与位于所述绑定区的所述第一金属层相连接，位于所述TFT区的所述第二金属层通过通孔与所述金属氧化物层相连接，位于所述表面贴合区的所述第二金属层与位于所述表面贴合区的所述第一金属层直接相连接；\n\n[0026]平坦层，所述平坦层位于所述刻蚀阻挡层的上方；\n\n[0027]ITO电极层，所述ITO电极层位于所述绑定区，所述ITO电极层通过通孔与所述绑定区的所述第二金属层相连接。\n\n[0028]根据本发明实施例所提供的mini-LED装置，所述绝缘层为氧化硅、氮化硅或有机层。\n\n[0029]根据本发明实施例所提供的mini-LED装置，所述金属反射膜为金属银、金属铝、合金金属或其他金属层。\n\n[0030]根据本发明实施例所提供的mini-LED装置，所述绝缘层和所述金属反射膜的图案相同，所述绝缘层和所述金属反射膜通过同一张掩膜版，经过不同顺序的刻蚀制成。\n\n[0031]根据本发明实施例所提供的mini-LED装置，所述金属反射膜的反射率要求为：\n\n[0032]白光像素：380纳米到700纳米波段之间的白光反射率大于85％；\n\n[0033]红光像素：700纳米波段的红光的反射率大于85％，其他波段的反射率大于或小于85％；\n\n[0034]绿光像素：550纳米波段的绿光的反射率大于85％，其他波段的反射率大于或小于85％；\n\n[0035]蓝光像素：450纳米波段的蓝光的反射率大于85％，其他波段的反射率大于或小于85％。\n\n[0036]根据本发明实施例所提供的mini-LED装置，所述LED芯片为封装前芯片或封装后芯片。\n\n[0037]本发明实施例提供了一种mini-LED装置的制作方法，包括以下步骤：\n\n[0038]步骤S1、在衬底基板上制作TFT器件；\n\n[0039]步骤S2、在所述TFT器件上通过成膜、黄光以及刻蚀的方法形成一层绝缘层；\n\n[0040]步骤S3、在所述绝缘层上制作形成金属反射膜；\n\n[0041]步骤S4、贴合mini-LED芯片；\n\n[0042]步骤S5、制作透明保护层。\n\n[0043]根据本发明实施例所提供的mini-LED装置的制作方法，在所述步骤S3中还包括刻蚀图案，所述绝缘层和所述金属反射膜的图案相同，所述绝缘层和所述金属反射膜使用同一张掩膜版。\n\n[0044]根据本发明实施例所提供的mini-LED装置的制作方法，在所述步骤S3中，所述金属反射膜的反射率要求为：\n\n[0045]白光像素：380纳米到700纳米波段之间的白光反射率大于85％；\n\n[0046]红光像素：700纳米波段的红光的反射率大于85％，其他波段的反射率大于或小于85％；\n\n[0047]绿光像素：550纳米波段的绿光的反射率大于85％，其他波段的反射率大于或小于85％；\n\n[0048]蓝光像素：450纳米波段的蓝光的反射率大于85％，其他波段的反射率大于或小于85％。\n\n[0049]本发明的有益效果为：本发明实施例所提供的一种mini-LED装置及制作方法，通过使用绝缘层以及金属反射膜来取代常规技术中使用钢网涂覆白油的方法，来提升patten图案的制作精度，以及提升了金属反射膜的膜厚均一性。通过设置的金属反射膜可以反射mini-LED所发出的光，大大提升了mini-LED装置的发光效率。\n\n附图说明\n\n[0050]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0051]图1为本实施例提供的一种mini-LED装置的结构示意图。\n\n[0052]图2为本实施例中mini-LED装置绑定处的顶部视角示意图。\n\n[0053]图3为本实施例所提供的mini-LED装置的制作方法的流程示意图。\n\n具体实施方式\n\n[0054]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0055]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0056]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0057]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0058]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0059]如图1所示，本发明实施例提供的一种mini-LED装置的结构示意图。所述mini-LED装置分为绑定区10、TFT区20和表面贴合区30，所述mini-LED装置包括：衬底基板101；TFT器件102，所述TFT器件102位于所述衬底基板101上；绝缘层103，所述绝缘层103设置在所述TFT器件102上；金属反射膜104，所述金属反射膜104设置在所述绝缘层103上；mini-LED芯片105，所述mini-LED芯片105贴合在所述表面贴合区30处；透明保护层106，所述透明保护层106覆盖所述金属反射膜104以及所述mini-LED芯片105。其中，所述衬底基板101可以为玻璃基板或柔性基板或其他基板，在此不做具体限定，本实施例以玻璃基板为例说明。所述TFT器件102可以是a-Si薄膜晶体管或金属氧化物薄膜晶体管或其他的半导体器件，在此不做具体限定，本实施例以金属氧化物薄膜晶体管为例说明。所述TFT器件102的尺寸设计符合mini-LED装置对于电流等要求。\n\n[0060]具体地，如图1所示，所述TFT器件102包括：第一金属层1021，所述第一金属层1021设置在所述衬底基板101上，在所述绑定区10、所述TFT区20及所述表面贴合区30均设置有所述第一金属层1021；其中，所述第一金属层1021的材料可以是金属铝或者金属铜或者是其他金属材质，本实施例以所述第一金属层1021为金属铜为例说明。\n\n[0061]栅极绝缘层1022，所述栅极绝缘层1022覆盖除所述表面贴合区30处的所述第一金属层1021外的所有所述第一金属层1021；即位于所述表面贴合区30的所述第一金属层1021裸露出上表面。\n\n[0062]金属氧化物层1023，所述金属氧化物层1023位于所述栅极绝缘层1022上；其中，所述金属氧化物层1023为IGZO，或者为其他金属氧化物，在此不做具体限定。\n\n[0063]刻蚀阻挡层1024，所述刻蚀阻挡层1024覆盖所述金属氧化物层1023；其中，所述刻蚀阻挡层1024不覆盖位于所述表面贴合区30的所述第一金属层1021，即位于所述表面贴合区30的所述第一金属层1021裸露出上表面。\n\n[0064]第二金属层1025，位于所述绑定区10的所述第二金属层1025通过通孔与位于所述绑定区10的所述第一金属层1021相连接，位于所述TFT区20的所述第二金属层1025通过通孔与所述金属氧化物层1023相连接，位于所述表面贴合区30的所述第二金属层1025与位于所述表面贴合区30的所述第一金属层1021直接相连接；\n\n[0065]平坦层1026，所述平坦层1026位于所述刻蚀阻挡层1024的上方；其中，所述平坦层1026在所述绑定区10中的所述第二金属层1025处设置有通孔，所述平坦层1026在所述TFT器件区20中的所述第二金属层1025处设置有通孔，所述平坦层1026不覆盖位于所述表面贴合区30的所述第二金属层1025，即位于所述表面贴合区30的所述第二金属层1025裸露出上表面。\n\n[0066]ITO电极层1027，所述ITO电极层1027位于所述绑定区10，所述ITO电极层1027通过通孔与所述绑定区10的所述第二金属层1025相连接。\n\n[0067]在所述绑定区10最上层的材质为ITO电极层1027，在所述TFT区20最上层的材质为平坦层1026，所述表面贴合区30的最上层为所述第二金属层1025，即所述表面贴合区30的最上层材质为金属铜。\n\n[0068]具体地，在所述TFT器件102上所设置的所述绝缘层103是通过成膜、黄光、刻蚀等工艺所制作形成的，所述绝缘层103为氧化硅、氮化硅或其他有机层等材料。所述金属反射膜104设置在所述绝缘层103上，所述金属反射膜104为金属银、金属铝、或其他具备反射能力的金属、或合金金属、或其他可以作为反射膜的金属层。其中，所述绝缘层103和所述金属反射膜104的图案相同，所述绝缘层103和所述金属反射膜104通过同一张mask，经过不同顺序的刻蚀制成。所述mini-LED芯片105是通过表面贴合工艺，如点锡膏1051，将所述mini-LED芯片105贴合在所述表面贴合区30，其中所述mini-LED芯片105为封装前芯片或封装后芯片，所述mini-LED芯片105的发光可以是实际需求中的任何颜色，具体颜色可以根据实际应用来决定。所述mini-LED芯片105所发射出的光照射在所述金属反射膜104上，所述金属反射膜104会将光反射上mini-LED装置的上方，以此来提高所述mini-LED装置的发光效率。\n\n[0069]具体地，所述金属反射膜104的反射率要求为：\n\n[0070]白光像素：380纳米到700纳米波段之间的白光反射率大于85％；\n\n[0071]红光像素：700纳米波段的红光的反射率大于85％，其他波段的反射率大于或小于85％；\n\n[0072]绿光像素：550纳米波段的绿光的反射率大于85％，其他波段的反射率大于或小于85％；\n\n[0073]蓝光像素：450纳米波段的蓝光的反射率大于85％，其他波段的反射率大于或小于85％。\n\n[0074]如图2所示，为本实施例中mini-LED装置绑定处的顶部视角示意图。如图2可知，在所述mini-LED装置中，在绑定时，所述mini-LED芯片的正极1在上，而所述mini-LED芯片的负极2则位于所述mini-LED芯片正极1的下方。\n\n[0075]如图3所示，为本发明实施例所提供的种mini-LED装置的制作方法的流程示意图，本发明实施例还提供一种mini-LED装置的制作方法，包括以下步骤：\n\n[0076]步骤S1、在衬底基板上制作TFT器件；\n\n[0077]具体地，所述衬底基板可以分为绑定区、TFT区和表面贴合区，所述衬底基板可以为玻璃基板或柔性基板或其他基板，在此不做具体限定，本实施例以玻璃基板为例说明。所述TFT器件可以是a-Si薄膜晶体管或金属氧化物薄膜晶体管或其他的半导体器件，在此不做具体限定，本实施例以金属氧化物薄膜晶体管为例说明。所述TFT器件的尺寸设计符合mini-LED装置对于电流等要求。所述TFT器件包括：第一金属层，所述第一金属层设置在所述衬底基板上，在所述绑定区、所述TFT区及所述表面贴合区均设置有所述第一金属层；其中，所述第一金属层的材料可以是金属铝或者金属铜或者是其他金属材质，本实施例以所述第一金属层为金属铜为例说明。\n\n[0078]栅极绝缘层，所述栅极绝缘层覆盖除所述表面贴合区处的所述第一金属层外的所有所述第一金属层；即，位于所述表面贴合区的所述第一金属层裸露出上表面。\n\n[0079]金属氧化物层，所述金属氧化物层位于所述栅极绝缘层上；其中，所述金属氧化物层为IGZO，或者为其他金属氧化物，在此不做具体限定。\n\n[0080]刻蚀阻挡层，所述刻蚀阻挡层覆盖所述金属氧化物层；其中，所述刻蚀阻挡层不覆盖位于所述表面贴合区的所述第一金属层，即所述第一金属层裸露出上表面。\n\n[0081]第二金属层，位于所述绑定区的所述第二金属层通过通孔与位于所述绑定区的所述第一金属层相连接，位于所述TFT区的所述第二金属层通过通孔与所述金属氧化物层相连接，位于所述表面贴合区的所述第二金属层与位于所述表面贴合区的所述第一金属层直接相连接；\n\n[0082]平坦层，所述平坦层位于所述刻蚀阻挡层的上方；其中，所述平坦层在所述绑定区中的所述第二金属层处设置有通孔，所述平坦层在所述TFT器件区中的所述第二金属层处设置有通孔，所述平坦层不覆盖位于所述表面贴合区的所述第二金属层，即所述第二金属层裸露出上表面。\n\n[0083]ITO电极层，所述ITO电极层位于所述绑定区，所述ITO电极层通过通孔与所述绑定区的所述第二金属层相连接。\n\n[0084]在所述绑定区最上层的材质为ITO电极层，在所述TFT区最上层的材质为平坦层，所述表面贴合区的最上层为所述第二金属层，即所述表面贴合区的最上层材质为金属铜。\n\n[0085]步骤S2、在所述TFT器件上通过成膜、黄光以及刻蚀的方法形成一层绝缘层；\n\n[0086]具体地，所述绝缘层为氧化硅、氮化硅或其他有机层等材料。\n\n[0087]步骤S3、在所述绝缘层上制作形成金属反射膜；\n\n[0088]具体地，所述金属反射膜设置在所述绝缘层上，所述金属反射膜为金属银、金属铝、或其他具备反射能力的金属、或合金金属、或其他可以作为反射膜的金属层。其中，所述绝缘层和所述金属反射膜的图案相同，所述绝缘层和所述金属反射膜通过同一张mask，经过不同顺序的刻蚀制成。\n\n[0089]其中，所述金属反射膜的反射率要求为：\n\n[0090]白光像素：380纳米到700纳米波段之间的白光反射率大于85％；\n\n[0091]红光像素：700纳米波段的红光的反射率大于85％，其他波段的反射率大于或小于85％；\n\n[0092]绿光像素：550纳米波段的绿光的反射率大于85％，其他波段的反射率大于或小于85％；\n\n[0093]蓝光像素：450纳米波段的蓝光的反射率大于85％，其他波段的反射率大于或小于85％。\n\n[0094]步骤S4、贴合mini-LED芯片；\n\n[0095]具体地，所述mini-LED芯片是通过表面贴合工艺，如点锡膏，将所述mini-LED芯片贴合在所述表面贴合区，其中所述mini-LED芯片为封装前芯片或封装后芯片，所述mini-LED芯片的发光可以是实际需求中的任何颜色，具体颜色可以根据实际应用来决定。所述mini-LED芯片所发射出的光照射在所述金属反射膜上，所述金属反射膜会将光反射上mini-LED装置的上方，以此来提高所述mini-LED装置的发光效率。\n\n[0096]步骤S5、制作透明保护层。\n\n[0097]具体地，在所述mini-LED芯片和所述金属反射膜上制作一层透明保护层，所述透明保护层可以起到隔绝水氧的作用，以此来保护所述mini-LED芯片和所述金属反射膜以及其他器件。\n\n[0098]本发明实施例所提供的一种mini-LED装置及制作方法，通过使用绝缘层以及金属反射膜来取代常规技术中使用钢网涂覆白油的方法，来提升patten图案的制作精度，以及提升了金属反射膜的膜厚均一性。通过设置的金属反射膜可以反射mini-LED所发出的光，大大提升了mini-LED装置的发光效率。\n\n[0099]以上对本申请实施例所提供的一种mini-LED装置及制作方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及一种显示器技术领域，尤其涉及一种mini-LED装置及制作方法。\n\n背景技术\n\n[0002]随着可穿戴应用设备如智能眼镜、智能手表等的逐渐兴起，显示行业对可挠曲显示器件的需求也不断增加。有机发光二极管显示器件(Organic Light Emitting Display,简称OLED)具有自发光不需背光源、厚度薄、视角广、反应速度快等特点，从而具有可挠曲显示的天然优势。面对柔性OLED的竞争，传统的液晶显示技术也逐渐采用柔性衬底往柔性、曲面等方向进行突破，由此可见，柔性、曲面显示的时代即将来临。且有机发光二极管主要有可自主发光，可设置柔性屏，发光效率高，响应时间快等优点。但是由于OLED生产成本比较高，OLED材料的寿命短，以及OLED屏幕还会出现烧屏的现象。因此目前行业正在大力发展mini-LED技术。\n\n[0003]随着面板显示行业的发展，面板制造技术将朝着更低的成本、更高的发光效率的方向行进。\n\n[0004]LCD配合Mini-LED局部调光的背光技术因为如下优势已成为挑战OLED显示的一项技术：\n\n[0005]亮度更高，LCD配合Mini-LED可以实现大于1000nits的超高亮度，通过区域调控电流，亮太画面可提高数倍，高于OLED的显示亮度；\n\n[0006]寿命更长，OLED材料寿命比LED寿命短，特别是蓝色OLED材料的显示寿命仍远低于其它颜色材料，长期工作会出现因蓝色发光下降导致的偏色；\n\n[0007]不会“烧屏”，OLED如部分像素长期工作于高亮度情况，会出现“烧屏”现象，而Mini-LED不存在此现象；\n\n[0008]功耗更低：同等发光亮度下，LCD配合Mini-LED的功耗是OLED显示屏的70％～80％；\n\n[0009]成本更低：LCD配合Mini-LED的成本大约是OLED显示屏的70％(小尺寸)；\n\n[0010]可靠性和环境适应性更高：OLED材料需要严格的阻水氧封装，且在较高温度条件下工作更易衰减，Mini-LED为无机半导体材料发光，具有更好的可靠性。\n\n[0011]在mini LED的传统技术中，mini LED背板工艺完成后，需要利用钢网涂敷白油以提升LED的反射率，但是白油工艺不使用mask,patten的制作粗糙，精准度差，厚度均一性控制不佳。\n\n发明内容\n\n[0012]为了克服现有技术的不足，本申请实施例提供一种mini-LED装置及制作方法，即在mini-LED背板工艺制作完成以后制作绝缘层以及反射膜，反射膜起到反射LED光，提升光效的膜层，后续继续制作透明保护层。\n\n[0013]本发明实施例提供了一种mini-LED装置，所述mini-LED装置分为绑定区、TFT区和表面贴合区，所述mini-LED装置包括：\n\n[0014]衬底基板；\n\n[0015]TFT器件，所述TFT器件位于所述衬底基板上；\n\n[0016]绝缘层，所述绝缘层设置在所述TFT器件上；\n\n[0017]金属反射膜，所述金属反射膜设置在所述绝缘层上；\n\n[0018]mini-LED芯片，所述mini-LED芯片贴合在所述表面贴合区处；\n\n[0019]透明保护层，所述透明保护层覆盖所述金属反射膜以及所述mini-LED芯片。\n\n[0020]根据本发明实施例所提供的mini-LED装置，所述TFT器件包括：\n\n[0021]第一金属层，所述第一金属层设置在所述衬底基板上，在所述绑定区、所述TFT区及所述表面贴合区均设置有所述第一金属层；\n\n[0022]栅极绝缘层，所述栅极绝缘层覆盖除所述表面贴合区处的所述第一金属层外的所有所述第一金属层；\n\n[0023]金属氧化物层，所述金属氧化物层位于所述栅极绝缘层上；\n\n[0024]刻蚀阻挡层，所述刻蚀阻挡层覆盖所述金属氧化物层；\n\n[0025]第二金属层，位于所述绑定区的所述第二金属层通过通孔与位于所述绑定区的所述第一金属层相连接，位于所述TFT区的所述第二金属层通过通孔与所述金属氧化物层相连接，位于所述表面贴合区的所述第二金属层与位于所述表面贴合区的所述第一金属层直接相连接；\n\n[0026]平坦层，所述平坦层位于所述刻蚀阻挡层的上方；\n\n[0027]ITO电极层，所述ITO电极层位于所述绑定区，所述ITO电极层通过通孔与所述绑定区的所述第二金属层相连接。\n\n[0028]根据本发明实施例所提供的mini-LED装置，所述绝缘层为氧化硅、氮化硅或有机层。\n\n[0029]根据本发明实施例所提供的mini-LED装置，所述金属反射膜为金属银、金属铝、合金金属或其他金属层。\n\n[0030]根据本发明实施例所提供的mini-LED装置，所述绝缘层和所述金属反射膜的图案相同，所述绝缘层和所述金属反射膜通过同一张掩膜版，经过不同顺序的刻蚀制成。\n\n[0031]根据本发明实施例所提供的mini-LED装置，所述金属反射膜的反射率要求为：\n\n[0032]白光像素：380纳米到700纳米波段之间的白光反射率大于85％；\n\n[0033]红光像素：700纳米波段的红光的反射率大于85％，其他波段的反射率大于或小于85％；\n\n[0034]绿光像素：550纳米波段的绿光的反射率大于85％，其他波段的反射率大于或小于85％；\n\n[0035]蓝光像素：450纳米波段的蓝光的反射率大于85％，其他波段的反射率大于或小于85％。\n\n[0036]根据本发明实施例所提供的mini-LED装置，所述LED芯片为封装前芯片或封装后芯片。\n\n[0037]本发明实施例提供了一种mini-LED装置的制作方法，包括以下步骤：\n\n[0038]步骤S1、在衬底基板上制作TFT器件；\n\n[0039]步骤S2、在所述TFT器件上通过成膜、黄光以及刻蚀的方法形成一层绝缘层；\n\n[0040]步骤S3、在所述绝缘层上制作形成金属反射膜；\n\n[0041]步骤S4、贴合mini-LED芯片；\n\n[0042]步骤S5、制作透明保护层。\n\n[0043]根据本发明实施例所提供的mini-LED装置的制作方法，在所述步骤S3中还包括刻蚀图案，所述绝缘层和所述金属反射膜的图案相同，所述绝缘层和所述金属反射膜使用同一张掩膜版。\n\n[0044]根据本发明实施例所提供的mini-LED装置的制作方法，在所述步骤S3中，所述金属反射膜的反射率要求为：\n\n[0045]白光像素：380纳米到700纳米波段之间的白光反射率大于85％；\n\n[0046]红光像素：700纳米波段的红光的反射率大于85％，其他波段的反射率大于或小于85％；\n\n[0047]绿光像素：550纳米波段的绿光的反射率大于85％，其他波段的反射率大于或小于85％；\n\n[0048]蓝光像素：450纳米波段的蓝光的反射率大于85％，其他波段的反射率大于或小于85％。\n\n[0049]本发明的有益效果为：本发明实施例所提供的一种mini-LED装置及制作方法，通过使用绝缘层以及金属反射膜来取代常规技术中使用钢网涂覆白油的方法，来提升patten图案的制作精度，以及提升了金属反射膜的膜厚均一性。通过设置的金属反射膜可以反射mini-LED所发出的光，大大提升了mini-LED装置的发光效率。\n\n附图说明\n\n[0050]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0051]图1为本实施例提供的一种mini-LED装置的结构示意图。\n\n[0052]图2为本实施例中mini-LED装置绑定处的顶部视角示意图。\n\n[0053]图3为本实施例所提供的mini-LED装置的制作方法的流程示意图。\n\n具体实施方式\n\n[0054]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0055]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0056]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0057]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0058]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0059]如图1所示，本发明实施例提供的一种mini-LED装置的结构示意图。所述mini-LED装置分为绑定区10、TFT区20和表面贴合区30，所述mini-LED装置包括：衬底基板101；TFT器件102，所述TFT器件102位于所述衬底基板101上；绝缘层103，所述绝缘层103设置在所述TFT器件102上；金属反射膜104，所述金属反射膜104设置在所述绝缘层103上；mini-LED芯片105，所述mini-LED芯片105贴合在所述表面贴合区30处；透明保护层106，所述透明保护层106覆盖所述金属反射膜104以及所述mini-LED芯片105。其中，所述衬底基板101可以为玻璃基板或柔性基板或其他基板，在此不做具体限定，本实施例以玻璃基板为例说明。所述TFT器件102可以是a-Si薄膜晶体管或金属氧化物薄膜晶体管或其他的半导体器件，在此不做具体限定，本实施例以金属氧化物薄膜晶体管为例说明。所述TFT器件102的尺寸设计符合mini-LED装置对于电流等要求。\n\n[0060]具体地，如图1所示，所述TFT器件102包括：第一金属层1021，所述第一金属层1021设置在所述衬底基板101上，在所述绑定区10、所述TFT区20及所述表面贴合区30均设置有所述第一金属层1021；其中，所述第一金属层1021的材料可以是金属铝或者金属铜或者是其他金属材质，本实施例以所述第一金属层1021为金属铜为例说明。\n\n[0061]栅极绝缘层1022，所述栅极绝缘层1022覆盖除所述表面贴合区30处的所述第一金属层1021外的所有所述第一金属层1021；即位于所述表面贴合区30的所述第一金属层1021裸露出上表面。\n\n[0062]金属氧化物层1023，所述金属氧化物层1023位于所述栅极绝缘层1022上；其中，所述金属氧化物层1023为IGZO，或者为其他金属氧化物，在此不做具体限定。\n\n[0063]刻蚀阻挡层1024，所述刻蚀阻挡层1024覆盖所述金属氧化物层1023；其中，所述刻蚀阻挡层1024不覆盖位于所述表面贴合区30的所述第一金属层1021，即位于所述表面贴合区30的所述第一金属层1021裸露出上表面。\n\n[0064]第二金属层1025，位于所述绑定区10的所述第二金属层1025通过通孔与位于所述绑定区10的所述第一金属层1021相连接，位于所述TFT区20的所述第二金属层1025通过通孔与所述金属氧化物层1023相连接，位于所述表面贴合区30的所述第二金属层1025与位于所述表面贴合区30的所述第一金属层1021直接相连接；\n\n[0065]平坦层1026，所述平坦层1026位于所述刻蚀阻挡层1024的上方；其中，所述平坦层1026在所述绑定区10中的所述第二金属层1025处设置有通孔，所述平坦层1026在所述TFT器件区20中的所述第二金属层1025处设置有通孔，所述平坦层1026不覆盖位于所述表面贴合区30的所述第二金属层1025，即位于所述表面贴合区30的所述第二金属层1025裸露出上表面。\n\n[0066]ITO电极层1027，所述ITO电极层1027位于所述绑定区10，所述ITO电极层1027通过通孔与所述绑定区10的所述第二金属层1025相连接。\n\n[0067]在所述绑定区10最上层的材质为ITO电极层1027，在所述TFT区20最上层的材质为平坦层1026，所述表面贴合区30的最上层为所述第二金属层1025，即所述表面贴合区30的最上层材质为金属铜。\n\n[0068]具体地，在所述TFT器件102上所设置的所述绝缘层103是通过成膜、黄光、刻蚀等工艺所制作形成的，所述绝缘层103为氧化硅、氮化硅或其他有机层等材料。所述金属反射膜104设置在所述绝缘层103上，所述金属反射膜104为金属银、金属铝、或其他具备反射能力的金属、或合金金属、或其他可以作为反射膜的金属层。其中，所述绝缘层103和所述金属反射膜104的图案相同，所述绝缘层103和所述金属反射膜104通过同一张mask，经过不同顺序的刻蚀制成。所述mini-LED芯片105是通过表面贴合工艺，如点锡膏1051，将所述mini-LED芯片105贴合在所述表面贴合区30，其中所述mini-LED芯片105为封装前芯片或封装后芯片，所述mini-LED芯片105的发光可以是实际需求中的任何颜色，具体颜色可以根据实际应用来决定。所述mini-LED芯片105所发射出的光照射在所述金属反射膜104上，所述金属反射膜104会将光反射上mini-LED装置的上方，以此来提高所述mini-LED装置的发光效率。\n\n[0069]具体地，所述金属反射膜104的反射率要求为：\n\n[0070]白光像素：380纳米到700纳米波段之间的白光反射率大于85％；\n\n[0071]红光像素：700纳米波段的红光的反射率大于85％，其他波段的反射率大于或小于85％；\n\n[0072]绿光像素：550纳米波段的绿光的反射率大于85％，其他波段的反射率大于或小于85％；\n\n[0073]蓝光像素：450纳米波段的蓝光的反射率大于85％，其他波段的反射率大于或小于85％。\n\n[0074]如图2所示，为本实施例中mini-LED装置绑定处的顶部视角示意图。如图2可知，在所述mini-LED装置中，在绑定时，所述mini-LED芯片的正极1在上，而所述mini-LED芯片的负极2则位于所述mini-LED芯片正极1的下方。\n\n[0075]如图3所示，为本发明实施例所提供的种mini-LED装置的制作方法的流程示意图，本发明实施例还提供一种mini-LED装置的制作方法，包括以下步骤：\n\n[0076]步骤S1、在衬底基板上制作TFT器件；\n\n[0077]具体地，所述衬底基板可以分为绑定区、TFT区和表面贴合区，所述衬底基板可以为玻璃基板或柔性基板或其他基板，在此不做具体限定，本实施例以玻璃基板为例说明。所述TFT器件可以是a-Si薄膜晶体管或金属氧化物薄膜晶体管或其他的半导体器件，在此不做具体限定，本实施例以金属氧化物薄膜晶体管为例说明。所述TFT器件的尺寸设计符合mini-LED装置对于电流等要求。所述TFT器件包括：第一金属层，所述第一金属层设置在所述衬底基板上，在所述绑定区、所述TFT区及所述表面贴合区均设置有所述第一金属层；其中，所述第一金属层的材料可以是金属铝或者金属铜或者是其他金属材质，本实施例以所述第一金属层为金属铜为例说明。\n\n[0078]栅极绝缘层，所述栅极绝缘层覆盖除所述表面贴合区处的所述第一金属层外的所有所述第一金属层；即，位于所述表面贴合区的所述第一金属层裸露出上表面。\n\n[0079]金属氧化物层，所述金属氧化物层位于所述栅极绝缘层上；其中，所述金属氧化物层为IGZO，或者为其他金属氧化物，在此不做具体限定。\n\n[0080]刻蚀阻挡层，所述刻蚀阻挡层覆盖所述金属氧化物层；其中，所述刻蚀阻挡层不覆盖位于所述表面贴合区的所述第一金属层，即所述第一金属层裸露出上表面。\n\n[0081]第二金属层，位于所述绑定区的所述第二金属层通过通孔与位于所述绑定区的所述第一金属层相连接，位于所述TFT区的所述第二金属层通过通孔与所述金属氧化物层相连接，位于所述表面贴合区的所述第二金属层与位于所述表面贴合区的所述第一金属层直接相连接；\n\n[0082]平坦层，所述平坦层位于所述刻蚀阻挡层的上方；其中，所述平坦层在所述绑定区中的所述第二金属层处设置有通孔，所述平坦层在所述TFT器件区中的所述第二金属层处设置有通孔，所述平坦层不覆盖位于所述表面贴合区的所述第二金属层，即所述第二金属层裸露出上表面。\n\n[0083]ITO电极层，所述ITO电极层位于所述绑定区，所述ITO电极层通过通孔与所述绑定区的所述第二金属层相连接。\n\n[0084]在所述绑定区最上层的材质为ITO电极层，在所述TFT区最上层的材质为平坦层，所述表面贴合区的最上层为所述第二金属层，即所述表面贴合区的最上层材质为金属铜。\n\n[0085]步骤S2、在所述TFT器件上通过成膜、黄光以及刻蚀的方法形成一层绝缘层；\n\n[0086]具体地，所述绝缘层为氧化硅、氮化硅或其他有机层等材料。\n\n[0087]步骤S3、在所述绝缘层上制作形成金属反射膜；\n\n[0088]具体地，所述金属反射膜设置在所述绝缘层上，所述金属反射膜为金属银、金属铝、或其他具备反射能力的金属、或合金金属、或其他可以作为反射膜的金属层。其中，所述绝缘层和所述金属反射膜的图案相同，所述绝缘层和所述金属反射膜通过同一张mask，经过不同顺序的刻蚀制成。\n\n[0089]其中，所述金属反射膜的反射率要求为：\n\n[0090]白光像素：380纳米到700纳米波段之间的白光反射率大于85％；\n\n[0091]红光像素：700纳米波段的红光的反射率大于85％，其他波段的反射率大于或小于85％；\n\n[0092]绿光像素：550纳米波段的绿光的反射率大于85％，其他波段的反射率大于或小于85％；\n\n[0093]蓝光像素：450纳米波段的蓝光的反射率大于85％，其他波段的反射率大于或小于85％。\n\n[0094]步骤S4、贴合mini-LED芯片；\n\n[0095]具体地，所述mini-LED芯片是通过表面贴合工艺，如点锡膏，将所述mini-LED芯片贴合在所述表面贴合区，其中所述mini-LED芯片为封装前芯片或封装后芯片，所述mini-LED芯片的发光可以是实际需求中的任何颜色，具体颜色可以根据实际应用来决定。所述mini-LED芯片所发射出的光照射在所述金属反射膜上，所述金属反射膜会将光反射上mini-LED装置的上方，以此来提高所述mini-LED装置的发光效率。\n\n[0096]步骤S5、制作透明保护层。\n\n[0097]具体地，在所述mini-LED芯片和所述金属反射膜上制作一层透明保护层，所述透明保护层可以起到隔绝水氧的作用，以此来保护所述mini-LED芯片和所述金属反射膜以及其他器件。\n\n[0098]本发明实施例所提供的一种mini-LED装置及制作方法，通过使用绝缘层以及金属反射膜来取代常规技术中使用钢网涂覆白油的方法，来提升patten图案的制作精度，以及提升了金属反射膜的膜厚均一性。通过设置的金属反射膜可以反射mini-LED所发出的光，大大提升了mini-LED装置的发光效率。\n\n[0099]以上对本申请实施例所提供的一种mini-LED装置及制作方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10896, 23950, '技术领域\n\n[0001]本发明涉及显示领域，特别是涉及一种拼接显示面板及其驱动方法、拼接显示装置。\n\n背景技术\n\n[0002]Mini-LED(Mini-Light Emitting Diode，迷你发光二极管)作为Micro-LED(Micro-Light Emitting Diode，微型发光二极管)与背板结合的产物，具有高对比度、高显色性能等可与OLED(Organic Light-Emitting Diode，有机发光二极管)相媲美的特点，成本稍高于LCD(Liquid Crystal Display，液晶显示面板)，但仅为OLED的六成左右，相比Micro-LED、OLED，Mini-LED更便于制作、实施，因此Mini-LED成为各大面板厂商竞相生产的热点。\n\n[0003]大尺寸Mini-LED显示基板，可以由数块小尺寸的Mini-LED显示基板拼接起来，理论上可以做到超大尺寸的Mini-LED显示基板；但是由于相邻的两个基板拼接处存在拼接缝隙，影响显示效果。目前的拼接技术还只能做到毫米级别的拼接缝，无法做到真正的无缝拼接，因此，现有的拼接显示面板，相邻的两个所述拼接显示屏的拼接缝隙处在视觉上呈现为接缝暗带。\n\n[0004]因此，现有的拼接显示面板技术中，还存在着拼接显示面板中的拼接缝隙处呈现接缝暗带，影响显示效果的问题，急需改进。\n\n发明内容\n\n[0005]本发明涉及一种拼接显示面板及其驱动方法、拼接显示装置，用于解决现有技术中存在着拼接显示面板中的拼接缝隙处呈现接缝暗带，影响显示效果的问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明提供的一种拼接显示面板，包括：\n\n[0008]至少两发光基板，每两相邻的所述发光基板之间具有间隙；\n\n[0009]至少一发光部，每一所述发光部对应于相应的所述间隙。\n\n[0010]在一些实施例中，所述间隙在所述发光部上的正投影位于所述发光部的边界内。\n\n[0011]在一些实施例中，每两相邻的所述发光基板中的至少一个包括与相应的所述发光部对应的非发光区域，所述非发光区域邻近对应的所述间隙。\n\n[0012]在一些实施例中，每一所述发光部位于对应的两所述发光基板的一侧，每一所述发光部包括衬底、位于所述衬底上的驱动芯片和位于所述衬底上的发光元件，所述驱动芯片电性连接于所述发光元件以及对应的两所述发光基板中的至少一个。\n\n[0013]在一些实施例中，所述驱动芯片包括第一驱动模块、第二驱动模块、比较模块和补偿模块；\n\n[0014]所述第一驱动模块用于驱动所述发光部；\n\n[0015]所述第二驱动模块用于驱动所述发光基板；\n\n[0016]所述比较模块用于比较所述第一驱动模块的电流值与所述第二驱动模块的电流值，并计算出所述第一驱动模块与所述第二驱动模块的电流值的差值；\n\n[0017]所述补偿模块用于根据所述发光部与所述发光基板之间的高度差以及所述第一驱动模块与所述第二驱动模块的电流值的差值对所述第二驱动模块的电流值进行补偿，所述第二驱动模块电流值的补偿值与所述发光部和所述发光基板之间的高度差成正比。\n\n[0018]在一些实施例中，所述衬底为柔性衬底，所述衬底的厚度范围为10微米至100微米。\n\n[0019]在一些实施例中，每一所述发光元件为发光二极管，每一所述发光基板为迷你发光二极管发光基板。\n\n[0020]在一些实施例中，每一所述间隙内设有粘合剂，所述粘合剂连接于对应的两所述发光基板的侧边。\n\n[0021]本申请还提供一种拼接显示面板的驱动方法，所述拼接显示面板包括至少两发光基板，每两相邻的所述发光基板之间具有间隙；至少一发光部，每一所述发光部对应于相应的所述间隙；每一所述发光部还包括驱动芯片，所述驱动芯片电性连接于对应的所述发光部以及对应的两所述发光基板中的至少一个，该驱动方法包括：\n\n[0022]获取所述发光部的电流值与所述发光基板的电流值；\n\n[0023]比较所述发光部的所述电流值与所述发光基板的所述电流值的大小，并计算出所述发光部的所述电流值与所述发光基板的所述电流值的差值；\n\n[0024]根据所述发光部与所述发光基板之间的高度差以及所述电流值的所述差值对所述发光基板的所述电流值进行补偿。\n\n[0025]本申请还提供一种拼接显示装置，包括上述任一项所述的拼接显示面板。\n\n[0026]与现有技术相比，本发明提供的一种拼接显示面板及其驱动方法、拼接显示装置的有益效果为：\n\n[0027]本发明提供的拼接显示面板，所述拼接显示面板包括：至少两发光基板，每两相邻的所述发光基板之间具有间隙；至少一发光部，每一所述发光部对应于相应的所述间隙；通过在相邻的两个所述发光基板之间设置所述发光部，减小了相邻的两个所述发光基板之间出现暗态视角的可能，提高了所述拼接显示面板的显示效果。\n\n附图说明\n\n[0028]图1为本发明实施例提供的拼接显示面板的第一结构示意图。\n\n[0029]图2为本发明实施例提供的拼接显示面板的第二结构示意图。\n\n[0030]图3为本发明实施例提供的拼接显示面板的第三结构示意图。\n\n[0031]图4为本发明实施例提供的拼接显示面板的第四结构示意图。\n\n[0032]图5为本发明实施例提供的拼接显示面板中驱动芯片的结构示意图。\n\n[0033]图6为本发明实施例提供的拼接显示面板驱动方法的第一流程示意图。\n\n[0034]图7为本发明实施例提供的拼接显示面板驱动方法的第二流程示意图。\n\n[0035]图8为本发明实施例提供的拼接显示面板驱动方法的第三流程示意图。\n\n[0036]图9为本发明实施例提供的拼接显示面板驱动方法的第四流程示意图。\n\n具体实施方式\n\n[0037]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0038]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0039]本发明提供一种拼接显示面板及其驱动方法、拼接显示装置，具体参阅图1至图9。\n\n[0040]大尺寸的Mini-LED显示基板，可以由数块小尺寸的Mini-LED显示基板拼接起来，理论上可以做到超大尺寸的Mini-LED显示基板；但是由于相邻的两个基板拼接处存在拼接缝隙，影响显示效果。而目前的拼接技术还只能做到毫米级别的拼接缝，无法做到真正的无缝拼接，因此，现有的拼接显示面板，相邻的两个所述拼接显示屏的拼接缝隙处在视觉上呈现为接缝暗带。因此，本发明提供一种拼接显示面板及其驱动方法、拼接显示装置以解决上述问题。\n\n[0041]参阅图1，为本发明实施例提供的拼接显示面板的第一结构示意图。一方面，本发明提供一种拼接显示面板1，所述拼接显示面板1由多个子显示面板拼接组成。首先，所述拼接显示面板1可以为OLED拼接显示面板、LCD拼接显示面板、Micro-LED拼接显示面板或是Mini-LED拼接显示面板，参阅图1可知，所述拼接显示面板1为一长方体状，且所述拼接显示面板1中每个所述子显示面板的八个外角均为圆角结构，以避免用户在使用时不便使用甚至刮伤手指。使用时若所述拼接显示面板1的显示面正对于用户的眼睛，即所述显示面平行于人眼，此时用户可以获得所述显示面的最佳观看视角。\n\n[0042]其中，所述显示面为所述拼接显示面板1中用于向用户展现各种实时画面信息的页面，每个所述子显示面板均包括一个所述显示面，每个所述子显示面板所显示的画面内容可以相同或是不同，即所述拼接显示面板1中的每个所述子显示面板可以同时显示，也可以分开显示；当每个所述子显示面板同时显示时，每个所述子显示面板可以显示相同的画面内容，或是多个所述子显示面板共同显示一个画面内容；当多个所述子显示面板分开显示时，可以是部分所述子显示面板处于显示状态，部分所述子显示面板处于关闭状态，也可以是部分所述子显示面板显示相同的画面内容，部分所述子显示面板显示不同的画面内容；对应地，对多个所述子显示面板的控制可以采用集中控制、分区控制或是单独控制，用户可根据使用的需求进行定义。\n\n[0043]需要说明的是，第一方向Z为垂直于所述拼接显示面板1的显示面所在平面的方向，在此处可以理解为所述拼接显示面板1的厚度方向；所述第二方向X为所述拼接显示面板1显示面内使得所述发光基板11横向延伸的方向，在此处可以理解为所述拼接显示面板1的长度方向，所述第一方向Z垂直于所述第二方向X；所述第三方向Y为所述拼接显示面板1显示面内使得所述发光基板11沿纵向延伸的方向，在此处可以理解为所述拼接显示面板1的宽度方向，所述第三方向Y同时垂直于所述第一方向Z和所述第二方向X。\n\n[0044]参阅图2，为本发明实施例提供的拼接显示面板的第二结构示意图。包含图1所述拼接显示面板1中的两个所述子显示面板。从图2中，可以看出，所述拼接显示面板1包括：至少两发光基板11，每两相邻的所述发光基板11之间具有间隙12；至少一发光部14，每一所述发光部14对应于相应的所述间隙12。\n\n[0045]可以理解的是，所述发光基板11即为所述子显示面板，每两相邻的所述发光基板11之间具有间隙12，所述间隙12即为相邻的两个所述子显示面板之间的拼接缝隙；其中，所述发光部14为设置在相邻的两个所述子显示面板之间，用于消除相邻的两个所述子显示面板之间由于拼接造成的暗态缝隙的部件，所述发光部14可以是与每个所述发光基板11的显示区具有相同显示功能的显示器件；因此，每个所述发光部14正对于所述间隙12设置在所述间隙12的正投影上方，以使得用户在所述拼接显示面板1的显示面观看显示画面时无暗态缝隙出现，提高所述拼接显示面板1的显示效果。\n\n[0046]进一步地，每个所述拼接显示面板1至少包括两个所述发光基板11，每相邻的两个所述发光基板11之间具有一个所述间隙12，每个所述间隙12的正上方设置有一个所述发光部14，因此，所述拼接显示面板1至少包括：两个所述发光基板11，一个所述间隙12和一个所述发光部14；所述间隙12的数量始终与所述发光部14的数量相等。\n\n[0047]进一步地，在本发明提供的实施例中，所述间隙12在所述发光部14上的正投影位于所述发光部14的边界内。\n\n[0048]可以理解的是，所述间隙12的四条边在所述发光部14上的正投影位于所述发光部14的四条边所限定的区域内，换言之，当所述间隙12沿所述第三方向Y存在于相邻的两个所述发光基板11之间时，所述间隙12在所述发光部14上的正投影为第一投影，所述第一投影沿所述第三方向Y的长度等于所述发光部沿所述第三方向Y的长度，所述第一投影沿所述第二方向X的长度为第一长度L1，所述发光部14沿所述第二方向X的长度为第二长度L2，所述第一长度L1小于所述第二长度L2，具体请参阅图2和图3。进一步地，当所述拼接显示面板1不仅包括沿所述第二方向X横向延伸的所述发光基板11，还包括沿所述第三方向Y延伸的所述发光基板11时，所述拼接显示面板1不仅包括沿所述第三方向Y的所述间隙12，还包括沿所述第二方向X的所述间隙12；当所述间隙12沿所述第二方向X存在于相邻的两个所述发光基板11之间时，所述间隙12在所述发光部14上的正投影为第二投影，所述第二投影沿所述第二方向X的长度等于所述发光部14沿所述第二方向X的长度，所述第二投影沿所述第三方向Y的长度小于所述发光部14沿所述第三方向Y的长度。\n\n[0049]进一步地，每两相邻的所述发光基板11中的至少一个包括与相应的所述发光部14对应的非发光区域，所述非发光区域邻近对应的所述间隙12。\n\n[0050]可以理解的是，相邻的两个所述发光基板11中的至少一个包括与相应的所述发光部14对应的非发光区域，即在所述发光部14的部分区域内不设置发光器件，所述非发光区域沿所述第二方向X的长度为第四长度L4，所述发光基板11上沿所述第二方向X，相邻的两个所述发光元件111之间的长度为第三长度L3，最优地，所述第四长度L4等于所述第三长度L3；所述非发光区域邻近对应的所述间隙12，所述非发光区域沿所述第一方向Z邻近对应的所述间隙12，即沿所述第一方向Z所述非发光区域与所述间隙12处的粘合剂13贴合，参阅图2。\n\n[0051]进一步地，每一所述发光部14位于对应的两所述发光基板11的一侧，每一所述发光部14包括衬底、位于所述衬底上的驱动芯片15和位于所述衬底上的发光元件141，所述驱动芯片15电性连接于所述发光元件141以及对应的两所述发光基板11中的至少一个。\n\n[0052]可以理解的是，每个所述发光部14设置在相邻的两个所述发光基板11的其中一侧，每一所述发光部14包括衬底、位于所述衬底上的所述驱动芯片15和位于所述衬底上的所述发光元件141，所述衬底用于支撑所述驱动芯片15和所述发光元件141，所述衬底内还包括驱动电路，所述驱动电路与所述驱动芯片15电性连接，所述驱动芯片15电性连接于所述发光元件141以及对应的两所述发光基板11中的至少一个。需要说明的是，所述驱动电路可以是由TFT晶体管驱动的；所述发光基板11上也设置有所述发光元件111，且每个所述发光基板11上的所述发光元件111的数量多于每个所述发光部14上的所述发光元件141的数量，但由于所述发光基板11与所述发光部14相对于所述拼接显示面板1显示面的距离不同，因此，为了保证所述拼接显示面板1整体出光的均匀性，位于所述发光基板11上的所述发光元件141的发光亮度与位于所述发光部14上的所述发光元件141的发光亮度不同；所述驱动芯片15用于控制所述发光基板11与所述发光部14上的所述发光元件发光，并根据所述拼接显示面板1的整体出光均匀性，对位于所述发光基板11上的所述发光元件111的发光亮度进行补偿。\n\n[0053]具体地，参阅图5，在本发明提供的实施例中，所述驱动芯片15包括第一驱动模块151、第二驱动模块152、比较模块153和补偿模块154；所述第一驱动模块151用于驱动所述发光部14；所述第二驱动模块152用于驱动所述发光基板11；所述比较模块153用于比较所述第一驱动模块151的电流值与所述第二驱动模块152的电流值，并计算出所述第一驱动模块151与所述第二驱动模块152的电流值的差值；所述补偿模块154用于根据所述发光部14与所述发光基板11之间的高度差以及所述第一驱动模块151与所述第二驱动模块152的电流值的差值对所述第二驱动模块152的电流值进行补偿，所述第二驱动模块152电流值的补偿值与所述发光部14和所述发光基板11之间的高度差成正比。\n\n[0054]可以理解的是，所述驱动芯片15包括多个模块：所述第一驱动模块151、所述第二驱动模块152、所述比较模块153以及所述补偿模块154；所述第一驱动模块151电性连接所述发光部14，用于驱动所述发光部14上的所述发光元件141发光；所述第二驱动模块152电性连接所述发光基板11，用于驱动所述发光基板11上的所述发光元件111发光；所述比较模块153在检测到所述第一驱动模块151与所述第二驱动模块152的电流值后，对所述第一驱动模块151的电流值与所述第二驱动模块152的电流值进行比较，并计算出所述第一驱动模块151与所述第二驱动模块152的电流值的差值；所述补偿模块154用于根据所述发光部14与所述发光基板11之间的高度差以及所述第一驱动模块151与所述第二驱动模块152的电流值的差值对所述第二驱动模块152的电流值进行补偿，所述第二驱动模块152电流值的补偿值与所述发光部14和所述发光基板11之间的高度差成正比，即所述发光部14沿所述第一方向Z的长度为第五长度L5，所述发光基板11沿所述第一方向Z的长度为第六长度L6，所述第五长度L5大于所述第六长度L6，所述第五长度L5与所述第六长度L6的高度差为绝对长度ΔL。当所述发光部14与所述发光基板11之间的高度差越大，所述绝对长度ΔL也越大，在所述第一驱动模块151与所述第二驱动模块152的电流值的差值不变的情况下，所述补偿模块154需要对所述第二驱动模块152补偿的电流值越大；当所述发光部14与所述发光基板11之间的高度差越小，所述绝对长度ΔL也越小，在所述第一驱动模块151与所述第二驱动模块152的电流值的差值不变的情况下，所述补偿模块154需要对所述第二驱动模块152补偿的电流值越小。\n\n[0055]进一步地，所述衬底为柔性衬底，所述衬底的厚度范围为10微米至100微米。\n\n[0056]可以理解的是，所述衬底为柔性衬底，柔性的所述衬底沿所述第一方向Z的长度更小，即柔性的所述衬底相对更薄，更便于所述拼接显示面板1的散热，也更利于实现超大屏显示，因此，所述拼接显示面板1的所述衬底优选材料为所述柔性衬底。常见的柔性衬底一般包括：聚酰亚胺和菲林，所述菲林由PC(polycarbonate，聚碳酸酯)，PP(polypropylene，聚丙烯)，PET(polyethyleneterephthalate，聚对苯二甲酸乙二醇酯)，或是PVC(polyvinylchlorid，聚氯乙烯)等材料制作而成。所述聚碳酸酯是一种无色透明的无定性的热塑性材料，耐酸，耐油；所述聚丙烯是一种优良的树脂材料，具备高密度、无侧链、高结晶性的线性聚合物，具有优良的综合性能；所述聚对苯二甲酸乙二醇酯具有优良的耐热性、耐化学药品性、强韧性、电绝缘性以及安全性等。具体地，所述衬底的厚度范围为10微米至100微米。\n\n[0057]进一步地，每一所述发光元件为发光二极管，每一所述发光基板11为迷你发光二极管发光基板。\n\n[0058]可以理解的是，所述发光基板11与所述发光部14上的所述发光元件为发光二极管，每一所述发光基板11为迷你发光二极管发光基板(Mini-LED)，所述迷你发光二极管发光基板11的尺寸介于小间距LED与Micro-LED之间，即在本发明提供的实施例中，所述拼接显示面板1是由多个迷你发光二极管发光基板拼接而成的显示面板，具体地，小间距LED是指位于所述发光基板11上相邻的两个所述发光元件111之间的间距为第七长度L7，所述第七长度L7小于等于2.5毫米的发光二极管发光基板，参阅图4。\n\n[0059]进一步地，每一所述间隙12内设有粘合剂13，所述粘合剂13连接于对应的两所述发光基板11的侧边。\n\n[0060]可以理解的是，相邻的两个所述发光基板11之间的间隙12内设有粘合剂13，所述粘合剂13连接于对应的两所述发光基板11的侧边，通过所述粘合剂13使得相邻的两个所述发光基板11的侧边贴合得更紧密、牢固，提高所述拼接显示面板1的稳定性。进一步地，当所述拼接显示面板1仅包括两个所述发光基板时，所述拼接显示面板1中只存在一个所述间隙12，即这两个所述发光基板11均只有一个侧面设置有粘合剂13，且这两个所述发光基板设置所述粘合剂13的侧边相对；当所述拼接显示面板1包括多个所述发光基板11时，在每两个相互接触的所述发光基板11之间存在一个所述间隙12，每个所述间隙12内均需要设置所述粘合剂13，使得相邻的两个所述发光基板11贴合得更紧密。\n\n[0061]另一方面，参阅图6，本申请提供一种拼接显示面板的驱动方法，所述拼接显示面板1包括至少两发光基板11，每两相邻的所述发光基板11之间具有间隙12；至少一发光部14，每一所述发光部14对应于相应的所述间隙12；每一所述发光部14还包括驱动芯片15，所述驱动芯片15电性连接于对应的所述发光部14以及对应的两所述发光基板11中的至少一个，该驱动方法包括：S100，获取所述发光部14的电流值与所述发光基板11的电流值；S200，比较所述发光部14的所述电流值与所述发光基板11的所述电流值的大小，并计算出所述发光部14的所述电流值与所述发光基板11的所述电流值的差值；S300，根据所述发光部14与所述发光基板11之间的高度差以及所述电流值的所述差值对所述发光基板11的所述电流值进行补偿。\n\n[0062]具体地，参阅图7，所述获取所述发光部14的所述电流值与所述发光基板11的所述电流值的步骤，包括：S101，首先，所述比较模块153通过所述第一驱动模块151获取所述发光部的所述电流值；S102，然后，所述比较模块153再通过所述第二驱动模块152获取所述发光基板11的所述电流值。\n\n[0063]进一步地，参阅图8，若所述发光部14的所述电流值为第一电流值，所述发光基板11的所述电流值为第二电流值；所述比较所述发光部14的所述电流值与所述发光基板11的所述电流值的大小，并计算出所述发光部14的所述电流值与所述发光基板11的所述电流值的差值的步骤，包括：S201，所述比较模块153对所述发光部14的所述第一电流值与所述发光基板11的所述第二电流值的大小进行比较；S202，然后，所述比较模块153计算出所述第一电流值与所述第二电流值的差值。\n\n[0064]进一步地，参阅图9，所述根据所述发光部14与所述发光基板11之间的所述高度差以及所述电流值的所述差值对所述发光基板11的所述电流值进行补偿的步骤，包括：S301，所述补偿模块154获取所述发光部14的所述第五长度L5与所述发光基板11的所述第六长度L6之间的所述高度差(所述绝对长度ΔL)；S302，所述补偿模块154获取所述第一电流值与所述第二电流值的差值；S303，所述补偿模块154根据所述发光部14与所述发光基板11之间的所述绝对长度ΔL的大小以及所述第一电流值与所述第二电流值的所述差值对所述发光基板11的所述电流值进行补偿。\n\n[0065]可以理解的是，当所述发光部14上的电流与所述发光基板11的电流相同时，位于所述发光部14上的所述发光元件141所发出的光线亮度与位于所述发光基板11上的所述发光元件111发出的光线亮度相同；由于所述发光部14设置在相邻的两个所述发光基板11的所述间隙12之上的区域，即所述发光部14上的所述发光元件141到所述拼接显示面板1显示面之间的距离为第一距离，所述发光基板11上的所述发光元件111到所述拼接显示面板1显示面之间的距离为第二距离，所述第一距离小于所述第二距离，即所述发光部14上的所述发光元件141比所述发光基板11上的所述发光元件111距离所述拼接显示面板1的显示面更近；换言之，当用户从所述拼接显示面板1显示面观看时，位于所述发光部14上的所述发光元件141发出的光线亮度比位于所述发光基板11上的所述发光元件111发出的光线亮度更强。因此，为了保证整个所述拼接显示面板1显示面显示的均一性，应将位于所述发光部14上的所述发光元件141发出的光线亮度调整得与位于所述发光基板11上的所述发光元件111发出的光线亮度从所述拼接显示面板1显示面观看时近似相等。\n\n[0066]进一步地，为了保证用户从所述拼接显示面板1显示面观看时，整个所述拼接显示面板1显示面的均一性，需要将所述发光部14的电流与所述发光基板11的电流设置成不同的电流，显然，距离所述拼接显示面板1显示面更近的地方，其电流更小，因此，所述发光部14的电流应小于所述发光基板11的电流。考虑到所述发光部14与所述发光基板11沿所述第一方向Z的所述高度差的影响，当所述发光部14与所述发光基板11距离所述拼接显示面板1显示面的距离差越大时，用户从所述拼接显示面板1显示面观看到的所述发光部14发出的光线亮度与所述发光基板11发出的光线亮度的差异越大；当所述发光部14与所述发光基板11距离所述拼接显示面板1显示面的距离差越小时，用户从所述拼接显示面板1显示面观看到的所述发光部14发出的光线亮度与所述发光基板11发出的光线亮度的差异越小；即所述发光部14与所述发光基板11沿所述第一方向Z的所述高度差与所述发光基板11的所述电流值的补偿值成正比。为了充分保证所述发光部14上的所述发光元件141发出的光线亮度与所述发光基板11上的所述发光元件111发出的光线亮度从所述拼接显示面板1显示面观看时近似无亮度差存在，所述补偿模块154对所述发光基板11的所述电流值的补偿除了考虑所述发光部14与所述发光基板11沿所述第一方向Z的所述高度差之外，还需要考虑所述发光部14的电流值与所述发光基板11的电流值的所述差值。可以理解的是，所述发光部14的电流值与所述发光基板11的电流值的差值越大时，从所述拼接显示面板1显示面观看到的所述发光部14与所述发光基板11发出的光线亮度的差值也越大，为了保持显示的均一性，所述补偿模块154对所述发光基板11的电流值的补偿值越大，即所述补偿模块154对所述发光基板11的所述电流值的补偿值与所述电流值的所述差值成正比。\n\n[0067]第三方面，本发明还提供一种拼接显示装置，包括上述任一项所述的拼接显示面板1。\n\n[0068]进一步地，所述拼接显示装置内还包括可执行所述拼接显示面板1驱动方法的第一载体，例如处理器；以及存储相关执行指令的第二载体，例如存储器。所述拼接显示装置中的所述第一载体会按照如下的指令，将一个或一个以上的应用程序的进程对应的可执行文件加载到所述拼接显示装置的所述第二载体中，并由所述第一载体来运行存储在所述第二载体中的应用程序，从而实现对所述拼接显示装置的驱动控制：\n\n[0069]获取所述发光部14的电流值与所述发光基板11的电流值；比较所述发光部14的所述电流值与所述发光基板11的所述电流值的大小，并计算出所述发光部14的所述电流值与所述发光基板11的所述电流值的差值；根据所述发光部14与所述发光基板11之间的高度差以及所述电流值的所述差值对所述发光基板11的所述电流值进行补偿。\n\n[0070]以上对本发明实施例所提供的一种拼接显示面板及其驱动方法、拼接显示装置进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。', '技术领域\n\n[0001]本发明涉及显示领域，特别是涉及一种拼接显示面板及其驱动方法、拼接显示装置。\n\n背景技术\n\n[0002]Mini-LED(Mini-Light Emitting Diode，迷你发光二极管)作为Micro-LED(Micro-Light Emitting Diode，微型发光二极管)与背板结合的产物，具有高对比度、高显色性能等可与OLED(Organic Light-Emitting Diode，有机发光二极管)相媲美的特点，成本稍高于LCD(Liquid Crystal Display，液晶显示面板)，但仅为OLED的六成左右，相比Micro-LED、OLED，Mini-LED更便于制作、实施，因此Mini-LED成为各大面板厂商竞相生产的热点。\n\n[0003]大尺寸Mini-LED显示基板，可以由数块小尺寸的Mini-LED显示基板拼接起来，理论上可以做到超大尺寸的Mini-LED显示基板；但是由于相邻的两个基板拼接处存在拼接缝隙，影响显示效果。目前的拼接技术还只能做到毫米级别的拼接缝，无法做到真正的无缝拼接，因此，现有的拼接显示面板，相邻的两个所述拼接显示屏的拼接缝隙处在视觉上呈现为接缝暗带。\n\n[0004]因此，现有的拼接显示面板技术中，还存在着拼接显示面板中的拼接缝隙处呈现接缝暗带，影响显示效果的问题，急需改进。\n\n发明内容\n\n[0005]本发明涉及一种拼接显示面板及其驱动方法、拼接显示装置，用于解决现有技术中存在着拼接显示面板中的拼接缝隙处呈现接缝暗带，影响显示效果的问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明提供的一种拼接显示面板，包括：\n\n[0008]至少两发光基板，每两相邻的所述发光基板之间具有间隙；\n\n[0009]至少一发光部，每一所述发光部对应于相应的所述间隙。\n\n[0010]在一些实施例中，所述间隙在所述发光部上的正投影位于所述发光部的边界内。\n\n[0011]在一些实施例中，每两相邻的所述发光基板中的至少一个包括与相应的所述发光部对应的非发光区域，所述非发光区域邻近对应的所述间隙。\n\n[0012]在一些实施例中，每一所述发光部位于对应的两所述发光基板的一侧，每一所述发光部包括衬底、位于所述衬底上的驱动芯片和位于所述衬底上的发光元件，所述驱动芯片电性连接于所述发光元件以及对应的两所述发光基板中的至少一个。\n\n[0013]在一些实施例中，所述驱动芯片包括第一驱动模块、第二驱动模块、比较模块和补偿模块；\n\n[0014]所述第一驱动模块用于驱动所述发光部；\n\n[0015]所述第二驱动模块用于驱动所述发光基板；\n\n[0016]所述比较模块用于比较所述第一驱动模块的电流值与所述第二驱动模块的电流值，并计算出所述第一驱动模块与所述第二驱动模块的电流值的差值；\n\n[0017]所述补偿模块用于根据所述发光部与所述发光基板之间的高度差以及所述第一驱动模块与所述第二驱动模块的电流值的差值对所述第二驱动模块的电流值进行补偿，所述第二驱动模块电流值的补偿值与所述发光部和所述发光基板之间的高度差成正比。\n\n[0018]在一些实施例中，所述衬底为柔性衬底，所述衬底的厚度范围为10微米至100微米。\n\n[0019]在一些实施例中，每一所述发光元件为发光二极管，每一所述发光基板为迷你发光二极管发光基板。\n\n[0020]在一些实施例中，每一所述间隙内设有粘合剂，所述粘合剂连接于对应的两所述发光基板的侧边。\n\n[0021]本申请还提供一种拼接显示面板的驱动方法，所述拼接显示面板包括至少两发光基板，每两相邻的所述发光基板之间具有间隙；至少一发光部，每一所述发光部对应于相应的所述间隙；每一所述发光部还包括驱动芯片，所述驱动芯片电性连接于对应的所述发光部以及对应的两所述发光基板中的至少一个，该驱动方法包括：\n\n[0022]获取所述发光部的电流值与所述发光基板的电流值；\n\n[0023]比较所述发光部的所述电流值与所述发光基板的所述电流值的大小，并计算出所述发光部的所述电流值与所述发光基板的所述电流值的差值；\n\n[0024]根据所述发光部与所述发光基板之间的高度差以及所述电流值的所述差值对所述发光基板的所述电流值进行补偿。\n\n[0025]本申请还提供一种拼接显示装置，包括上述任一项所述的拼接显示面板。\n\n[0026]与现有技术相比，本发明提供的一种拼接显示面板及其驱动方法、拼接显示装置的有益效果为：\n\n[0027]本发明提供的拼接显示面板，所述拼接显示面板包括：至少两发光基板，每两相邻的所述发光基板之间具有间隙；至少一发光部，每一所述发光部对应于相应的所述间隙；通过在相邻的两个所述发光基板之间设置所述发光部，减小了相邻的两个所述发光基板之间出现暗态视角的可能，提高了所述拼接显示面板的显示效果。\n\n附图说明\n\n[0028]图1为本发明实施例提供的拼接显示面板的第一结构示意图。\n\n[0029]图2为本发明实施例提供的拼接显示面板的第二结构示意图。\n\n[0030]图3为本发明实施例提供的拼接显示面板的第三结构示意图。\n\n[0031]图4为本发明实施例提供的拼接显示面板的第四结构示意图。\n\n[0032]图5为本发明实施例提供的拼接显示面板中驱动芯片的结构示意图。\n\n[0033]图6为本发明实施例提供的拼接显示面板驱动方法的第一流程示意图。\n\n[0034]图7为本发明实施例提供的拼接显示面板驱动方法的第二流程示意图。\n\n[0035]图8为本发明实施例提供的拼接显示面板驱动方法的第三流程示意图。\n\n[0036]图9为本发明实施例提供的拼接显示面板驱动方法的第四流程示意图。\n\n具体实施方式\n\n[0037]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0038]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0039]本发明提供一种拼接显示面板及其驱动方法、拼接显示装置，具体参阅图1至图9。\n\n[0040]大尺寸的Mini-LED显示基板，可以由数块小尺寸的Mini-LED显示基板拼接起来，理论上可以做到超大尺寸的Mini-LED显示基板；但是由于相邻的两个基板拼接处存在拼接缝隙，影响显示效果。而目前的拼接技术还只能做到毫米级别的拼接缝，无法做到真正的无缝拼接，因此，现有的拼接显示面板，相邻的两个所述拼接显示屏的拼接缝隙处在视觉上呈现为接缝暗带。因此，本发明提供一种拼接显示面板及其驱动方法、拼接显示装置以解决上述问题。\n\n[0041]参阅图1，为本发明实施例提供的拼接显示面板的第一结构示意图。一方面，本发明提供一种拼接显示面板1，所述拼接显示面板1由多个子显示面板拼接组成。首先，所述拼接显示面板1可以为OLED拼接显示面板、LCD拼接显示面板、Micro-LED拼接显示面板或是Mini-LED拼接显示面板，参阅图1可知，所述拼接显示面板1为一长方体状，且所述拼接显示面板1中每个所述子显示面板的八个外角均为圆角结构，以避免用户在使用时不便使用甚至刮伤手指。使用时若所述拼接显示面板1的显示面正对于用户的眼睛，即所述显示面平行于人眼，此时用户可以获得所述显示面的最佳观看视角。\n\n[0042]其中，所述显示面为所述拼接显示面板1中用于向用户展现各种实时画面信息的页面，每个所述子显示面板均包括一个所述显示面，每个所述子显示面板所显示的画面内容可以相同或是不同，即所述拼接显示面板1中的每个所述子显示面板可以同时显示，也可以分开显示；当每个所述子显示面板同时显示时，每个所述子显示面板可以显示相同的画面内容，或是多个所述子显示面板共同显示一个画面内容；当多个所述子显示面板分开显示时，可以是部分所述子显示面板处于显示状态，部分所述子显示面板处于关闭状态，也可以是部分所述子显示面板显示相同的画面内容，部分所述子显示面板显示不同的画面内容；对应地，对多个所述子显示面板的控制可以采用集中控制、分区控制或是单独控制，用户可根据使用的需求进行定义。\n\n[0043]需要说明的是，第一方向Z为垂直于所述拼接显示面板1的显示面所在平面的方向，在此处可以理解为所述拼接显示面板1的厚度方向；所述第二方向X为所述拼接显示面板1显示面内使得所述发光基板11横向延伸的方向，在此处可以理解为所述拼接显示面板1的长度方向，所述第一方向Z垂直于所述第二方向X；所述第三方向Y为所述拼接显示面板1显示面内使得所述发光基板11沿纵向延伸的方向，在此处可以理解为所述拼接显示面板1的宽度方向，所述第三方向Y同时垂直于所述第一方向Z和所述第二方向X。\n\n[0044]参阅图2，为本发明实施例提供的拼接显示面板的第二结构示意图。包含图1所述拼接显示面板1中的两个所述子显示面板。从图2中，可以看出，所述拼接显示面板1包括：至少两发光基板11，每两相邻的所述发光基板11之间具有间隙12；至少一发光部14，每一所述发光部14对应于相应的所述间隙12。\n\n[0045]可以理解的是，所述发光基板11即为所述子显示面板，每两相邻的所述发光基板11之间具有间隙12，所述间隙12即为相邻的两个所述子显示面板之间的拼接缝隙；其中，所述发光部14为设置在相邻的两个所述子显示面板之间，用于消除相邻的两个所述子显示面板之间由于拼接造成的暗态缝隙的部件，所述发光部14可以是与每个所述发光基板11的显示区具有相同显示功能的显示器件；因此，每个所述发光部14正对于所述间隙12设置在所述间隙12的正投影上方，以使得用户在所述拼接显示面板1的显示面观看显示画面时无暗态缝隙出现，提高所述拼接显示面板1的显示效果。\n\n[0046]进一步地，每个所述拼接显示面板1至少包括两个所述发光基板11，每相邻的两个所述发光基板11之间具有一个所述间隙12，每个所述间隙12的正上方设置有一个所述发光部14，因此，所述拼接显示面板1至少包括：两个所述发光基板11，一个所述间隙12和一个所述发光部14；所述间隙12的数量始终与所述发光部14的数量相等。\n\n[0047]进一步地，在本发明提供的实施例中，所述间隙12在所述发光部14上的正投影位于所述发光部14的边界内。\n\n[0048]可以理解的是，所述间隙12的四条边在所述发光部14上的正投影位于所述发光部14的四条边所限定的区域内，换言之，当所述间隙12沿所述第三方向Y存在于相邻的两个所述发光基板11之间时，所述间隙12在所述发光部14上的正投影为第一投影，所述第一投影沿所述第三方向Y的长度等于所述发光部沿所述第三方向Y的长度，所述第一投影沿所述第二方向X的长度为第一长度L1，所述发光部14沿所述第二方向X的长度为第二长度L2，所述第一长度L1小于所述第二长度L2，具体请参阅图2和图3。进一步地，当所述拼接显示面板1不仅包括沿所述第二方向X横向延伸的所述发光基板11，还包括沿所述第三方向Y延伸的所述发光基板11时，所述拼接显示面板1不仅包括沿所述第三方向Y的所述间隙12，还包括沿所述第二方向X的所述间隙12；当所述间隙12沿所述第二方向X存在于相邻的两个所述发光基板11之间时，所述间隙12在所述发光部14上的正投影为第二投影，所述第二投影沿所述第二方向X的长度等于所述发光部14沿所述第二方向X的长度，所述第二投影沿所述第三方向Y的长度小于所述发光部14沿所述第三方向Y的长度。\n\n[0049]进一步地，每两相邻的所述发光基板11中的至少一个包括与相应的所述发光部14对应的非发光区域，所述非发光区域邻近对应的所述间隙12。\n\n[0050]可以理解的是，相邻的两个所述发光基板11中的至少一个包括与相应的所述发光部14对应的非发光区域，即在所述发光部14的部分区域内不设置发光器件，所述非发光区域沿所述第二方向X的长度为第四长度L4，所述发光基板11上沿所述第二方向X，相邻的两个所述发光元件111之间的长度为第三长度L3，最优地，所述第四长度L4等于所述第三长度L3；所述非发光区域邻近对应的所述间隙12，所述非发光区域沿所述第一方向Z邻近对应的所述间隙12，即沿所述第一方向Z所述非发光区域与所述间隙12处的粘合剂13贴合，参阅图2。\n\n[0051]进一步地，每一所述发光部14位于对应的两所述发光基板11的一侧，每一所述发光部14包括衬底、位于所述衬底上的驱动芯片15和位于所述衬底上的发光元件141，所述驱动芯片15电性连接于所述发光元件141以及对应的两所述发光基板11中的至少一个。\n\n[0052]可以理解的是，每个所述发光部14设置在相邻的两个所述发光基板11的其中一侧，每一所述发光部14包括衬底、位于所述衬底上的所述驱动芯片15和位于所述衬底上的所述发光元件141，所述衬底用于支撑所述驱动芯片15和所述发光元件141，所述衬底内还包括驱动电路，所述驱动电路与所述驱动芯片15电性连接，所述驱动芯片15电性连接于所述发光元件141以及对应的两所述发光基板11中的至少一个。需要说明的是，所述驱动电路可以是由TFT晶体管驱动的；所述发光基板11上也设置有所述发光元件111，且每个所述发光基板11上的所述发光元件111的数量多于每个所述发光部14上的所述发光元件141的数量，但由于所述发光基板11与所述发光部14相对于所述拼接显示面板1显示面的距离不同，因此，为了保证所述拼接显示面板1整体出光的均匀性，位于所述发光基板11上的所述发光元件141的发光亮度与位于所述发光部14上的所述发光元件141的发光亮度不同；所述驱动芯片15用于控制所述发光基板11与所述发光部14上的所述发光元件发光，并根据所述拼接显示面板1的整体出光均匀性，对位于所述发光基板11上的所述发光元件111的发光亮度进行补偿。\n\n[0053]具体地，参阅图5，在本发明提供的实施例中，所述驱动芯片15包括第一驱动模块151、第二驱动模块152、比较模块153和补偿模块154；所述第一驱动模块151用于驱动所述发光部14；所述第二驱动模块152用于驱动所述发光基板11；所述比较模块153用于比较所述第一驱动模块151的电流值与所述第二驱动模块152的电流值，并计算出所述第一驱动模块151与所述第二驱动模块152的电流值的差值；所述补偿模块154用于根据所述发光部14与所述发光基板11之间的高度差以及所述第一驱动模块151与所述第二驱动模块152的电流值的差值对所述第二驱动模块152的电流值进行补偿，所述第二驱动模块152电流值的补偿值与所述发光部14和所述发光基板11之间的高度差成正比。\n\n[0054]可以理解的是，所述驱动芯片15包括多个模块：所述第一驱动模块151、所述第二驱动模块152、所述比较模块153以及所述补偿模块154；所述第一驱动模块151电性连接所述发光部14，用于驱动所述发光部14上的所述发光元件141发光；所述第二驱动模块152电性连接所述发光基板11，用于驱动所述发光基板11上的所述发光元件111发光；所述比较模块153在检测到所述第一驱动模块151与所述第二驱动模块152的电流值后，对所述第一驱动模块151的电流值与所述第二驱动模块152的电流值进行比较，并计算出所述第一驱动模块151与所述第二驱动模块152的电流值的差值；所述补偿模块154用于根据所述发光部14与所述发光基板11之间的高度差以及所述第一驱动模块151与所述第二驱动模块152的电流值的差值对所述第二驱动模块152的电流值进行补偿，所述第二驱动模块152电流值的补偿值与所述发光部14和所述发光基板11之间的高度差成正比，即所述发光部14沿所述第一方向Z的长度为第五长度L5，所述发光基板11沿所述第一方向Z的长度为第六长度L6，所述第五长度L5大于所述第六长度L6，所述第五长度L5与所述第六长度L6的高度差为绝对长度ΔL。当所述发光部14与所述发光基板11之间的高度差越大，所述绝对长度ΔL也越大，在所述第一驱动模块151与所述第二驱动模块152的电流值的差值不变的情况下，所述补偿模块154需要对所述第二驱动模块152补偿的电流值越大；当所述发光部14与所述发光基板11之间的高度差越小，所述绝对长度ΔL也越小，在所述第一驱动模块151与所述第二驱动模块152的电流值的差值不变的情况下，所述补偿模块154需要对所述第二驱动模块152补偿的电流值越小。\n\n[0055]进一步地，所述衬底为柔性衬底，所述衬底的厚度范围为10微米至100微米。\n\n[0056]可以理解的是，所述衬底为柔性衬底，柔性的所述衬底沿所述第一方向Z的长度更小，即柔性的所述衬底相对更薄，更便于所述拼接显示面板1的散热，也更利于实现超大屏显示，因此，所述拼接显示面板1的所述衬底优选材料为所述柔性衬底。常见的柔性衬底一般包括：聚酰亚胺和菲林，所述菲林由PC(polycarbonate，聚碳酸酯)，PP(polypropylene，聚丙烯)，PET(polyethyleneterephthalate，聚对苯二甲酸乙二醇酯)，或是PVC(polyvinylchlorid，聚氯乙烯)等材料制作而成。所述聚碳酸酯是一种无色透明的无定性的热塑性材料，耐酸，耐油；所述聚丙烯是一种优良的树脂材料，具备高密度、无侧链、高结晶性的线性聚合物，具有优良的综合性能；所述聚对苯二甲酸乙二醇酯具有优良的耐热性、耐化学药品性、强韧性、电绝缘性以及安全性等。具体地，所述衬底的厚度范围为10微米至100微米。\n\n[0057]进一步地，每一所述发光元件为发光二极管，每一所述发光基板11为迷你发光二极管发光基板。\n\n[0058]可以理解的是，所述发光基板11与所述发光部14上的所述发光元件为发光二极管，每一所述发光基板11为迷你发光二极管发光基板(Mini-LED)，所述迷你发光二极管发光基板11的尺寸介于小间距LED与Micro-LED之间，即在本发明提供的实施例中，所述拼接显示面板1是由多个迷你发光二极管发光基板拼接而成的显示面板，具体地，小间距LED是指位于所述发光基板11上相邻的两个所述发光元件111之间的间距为第七长度L7，所述第七长度L7小于等于2.5毫米的发光二极管发光基板，参阅图4。\n\n[0059]进一步地，每一所述间隙12内设有粘合剂13，所述粘合剂13连接于对应的两所述发光基板11的侧边。\n\n[0060]可以理解的是，相邻的两个所述发光基板11之间的间隙12内设有粘合剂13，所述粘合剂13连接于对应的两所述发光基板11的侧边，通过所述粘合剂13使得相邻的两个所述发光基板11的侧边贴合得更紧密、牢固，提高所述拼接显示面板1的稳定性。进一步地，当所述拼接显示面板1仅包括两个所述发光基板时，所述拼接显示面板1中只存在一个所述间隙12，即这两个所述发光基板11均只有一个侧面设置有粘合剂13，且这两个所述发光基板设置所述粘合剂13的侧边相对；当所述拼接显示面板1包括多个所述发光基板11时，在每两个相互接触的所述发光基板11之间存在一个所述间隙12，每个所述间隙12内均需要设置所述粘合剂13，使得相邻的两个所述发光基板11贴合得更紧密。\n\n[0061]另一方面，参阅图6，本申请提供一种拼接显示面板的驱动方法，所述拼接显示面板1包括至少两发光基板11，每两相邻的所述发光基板11之间具有间隙12；至少一发光部14，每一所述发光部14对应于相应的所述间隙12；每一所述发光部14还包括驱动芯片15，所述驱动芯片15电性连接于对应的所述发光部14以及对应的两所述发光基板11中的至少一个，该驱动方法包括：S100，获取所述发光部14的电流值与所述发光基板11的电流值；S200，比较所述发光部14的所述电流值与所述发光基板11的所述电流值的大小，并计算出所述发光部14的所述电流值与所述发光基板11的所述电流值的差值；S300，根据所述发光部14与所述发光基板11之间的高度差以及所述电流值的所述差值对所述发光基板11的所述电流值进行补偿。\n\n[0062]具体地，参阅图7，所述获取所述发光部14的所述电流值与所述发光基板11的所述电流值的步骤，包括：S101，首先，所述比较模块153通过所述第一驱动模块151获取所述发光部的所述电流值；S102，然后，所述比较模块153再通过所述第二驱动模块152获取所述发光基板11的所述电流值。\n\n[0063]进一步地，参阅图8，若所述发光部14的所述电流值为第一电流值，所述发光基板11的所述电流值为第二电流值；所述比较所述发光部14的所述电流值与所述发光基板11的所述电流值的大小，并计算出所述发光部14的所述电流值与所述发光基板11的所述电流值的差值的步骤，包括：S201，所述比较模块153对所述发光部14的所述第一电流值与所述发光基板11的所述第二电流值的大小进行比较；S202，然后，所述比较模块153计算出所述第一电流值与所述第二电流值的差值。\n\n[0064]进一步地，参阅图9，所述根据所述发光部14与所述发光基板11之间的所述高度差以及所述电流值的所述差值对所述发光基板11的所述电流值进行补偿的步骤，包括：S301，所述补偿模块154获取所述发光部14的所述第五长度L5与所述发光基板11的所述第六长度L6之间的所述高度差(所述绝对长度ΔL)；S302，所述补偿模块154获取所述第一电流值与所述第二电流值的差值；S303，所述补偿模块154根据所述发光部14与所述发光基板11之间的所述绝对长度ΔL的大小以及所述第一电流值与所述第二电流值的所述差值对所述发光基板11的所述电流值进行补偿。\n\n[0065]可以理解的是，当所述发光部14上的电流与所述发光基板11的电流相同时，位于所述发光部14上的所述发光元件141所发出的光线亮度与位于所述发光基板11上的所述发光元件111发出的光线亮度相同；由于所述发光部14设置在相邻的两个所述发光基板11的所述间隙12之上的区域，即所述发光部14上的所述发光元件141到所述拼接显示面板1显示面之间的距离为第一距离，所述发光基板11上的所述发光元件111到所述拼接显示面板1显示面之间的距离为第二距离，所述第一距离小于所述第二距离，即所述发光部14上的所述发光元件141比所述发光基板11上的所述发光元件111距离所述拼接显示面板1的显示面更近；换言之，当用户从所述拼接显示面板1显示面观看时，位于所述发光部14上的所述发光元件141发出的光线亮度比位于所述发光基板11上的所述发光元件111发出的光线亮度更强。因此，为了保证整个所述拼接显示面板1显示面显示的均一性，应将位于所述发光部14上的所述发光元件141发出的光线亮度调整得与位于所述发光基板11上的所述发光元件111发出的光线亮度从所述拼接显示面板1显示面观看时近似相等。\n\n[0066]进一步地，为了保证用户从所述拼接显示面板1显示面观看时，整个所述拼接显示面板1显示面的均一性，需要将所述发光部14的电流与所述发光基板11的电流设置成不同的电流，显然，距离所述拼接显示面板1显示面更近的地方，其电流更小，因此，所述发光部14的电流应小于所述发光基板11的电流。考虑到所述发光部14与所述发光基板11沿所述第一方向Z的所述高度差的影响，当所述发光部14与所述发光基板11距离所述拼接显示面板1显示面的距离差越大时，用户从所述拼接显示面板1显示面观看到的所述发光部14发出的光线亮度与所述发光基板11发出的光线亮度的差异越大；当所述发光部14与所述发光基板11距离所述拼接显示面板1显示面的距离差越小时，用户从所述拼接显示面板1显示面观看到的所述发光部14发出的光线亮度与所述发光基板11发出的光线亮度的差异越小；即所述发光部14与所述发光基板11沿所述第一方向Z的所述高度差与所述发光基板11的所述电流值的补偿值成正比。为了充分保证所述发光部14上的所述发光元件141发出的光线亮度与所述发光基板11上的所述发光元件111发出的光线亮度从所述拼接显示面板1显示面观看时近似无亮度差存在，所述补偿模块154对所述发光基板11的所述电流值的补偿除了考虑所述发光部14与所述发光基板11沿所述第一方向Z的所述高度差之外，还需要考虑所述发光部14的电流值与所述发光基板11的电流值的所述差值。可以理解的是，所述发光部14的电流值与所述发光基板11的电流值的差值越大时，从所述拼接显示面板1显示面观看到的所述发光部14与所述发光基板11发出的光线亮度的差值也越大，为了保持显示的均一性，所述补偿模块154对所述发光基板11的电流值的补偿值越大，即所述补偿模块154对所述发光基板11的所述电流值的补偿值与所述电流值的所述差值成正比。\n\n[0067]第三方面，本发明还提供一种拼接显示装置，包括上述任一项所述的拼接显示面板1。\n\n[0068]进一步地，所述拼接显示装置内还包括可执行所述拼接显示面板1驱动方法的第一载体，例如处理器；以及存储相关执行指令的第二载体，例如存储器。所述拼接显示装置中的所述第一载体会按照如下的指令，将一个或一个以上的应用程序的进程对应的可执行文件加载到所述拼接显示装置的所述第二载体中，并由所述第一载体来运行存储在所述第二载体中的应用程序，从而实现对所述拼接显示装置的驱动控制：\n\n[0069]获取所述发光部14的电流值与所述发光基板11的电流值；比较所述发光部14的所述电流值与所述发光基板11的所述电流值的大小，并计算出所述发光部14的所述电流值与所述发光基板11的所述电流值的差值；根据所述发光部14与所述发光基板11之间的高度差以及所述电流值的所述差值对所述发光基板11的所述电流值进行补偿。\n\n[0070]以上对本发明实施例所提供的一种拼接显示面板及其驱动方法、拼接显示装置进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10897, 23951, '技术领域\n\n[0001]本申请涉及显示面板技术领域，尤其涉及一种用于透明显示的迷你发光二极管显示面板及拼接屏。\n\n背景技术\n\n[0002]作为新型显示技术的一种，透明显示技术可广泛用于展示柜、橱窗、智慧建筑、信息交通等显示领域，前景广阔。与LCD、OLED和DLP(Digital Light Processing,数字光处理)等透明技术相比，LED透明显示技术可发挥高透光率、高亮度、可大尺寸等优势，是透明显示的最佳实现方式之一。\n\n[0003]目前常规的LED透明显示屏可分为两大类：PCB LED透明屏和LED光电玻璃屏。PCBLED透明屏制程相对成熟，成本较低；但是由于PCB本身不透光，产品总体间距较大，分辨率受限，透光率较低，且视角受限，产品观感差。LED光电玻璃屏的导电玻璃、面层玻璃夹SMD(Surface Mounted Devices，表面贴装器件)，透过率高。但是需要使用带内置IC的SMD级传实现信号控制，导致成本很高。此外目前光电玻璃屏一般使用ITO(Indium tin oxide,氧化铟锡)等方阻较大的材料作为导电金属线路，导致间距很大，颗粒感明显，应用场景受限。\n\n发明内容\n\n[0004]本申请提供一种用于透明显示的迷你发光二极管显示面板及拼接屏，以解决现有的透明显示屏中存在的间距较大，透光率较低的技术问题。\n\n[0005]本申请实施例提供一种用于透明显示的迷你发光二极管(mini LED)显示面板，所述显示面板包括阵列基板、设置于所述阵列基板上的多个像素单元；所述阵列基板包括玻璃衬底、设置于所述玻璃衬底上的多个驱动控制单元和金属走线；\n\n[0006]每一所述驱动控制单元与每一所述像素单元对应连接，所述金属走线与所述驱动控制单元和所述像素单元连接；\n\n[0007]所述金属走线设置于所述阵列基板的不同膜层上。\n\n[0008]在一些实施例中，所述阵列基板包括第一膜层和第二膜层；\n\n[0009]所述金属走线包括电源线和公共电压线，所述电源线包括第一电源线和第二电源线，所述公共电压线包括第一公共电压线和第二公共电压线；\n\n[0010]所述第一电源线与所述第一公共电压线设置于所述第一膜层上，所述第二电源线与所述第二公共电压线设置于所述第二膜层上；\n\n[0011]所述第一电源线与所述第二电源线经过孔连接，所述第一公共电压线与所述第二公共电压线经过孔连接。\n\n[0012]在一些实施例中，所述金属走线还包括扫描线、数据线、感测线和参考电压线；\n\n[0013]所述扫描线和所述感测线设置于所述第一膜层上，所述数据线和所述参考电压线设置于所述第二膜层上。\n\n[0014]在一些实施例中，所述驱动控制单元包括第一薄膜晶体管、第二薄膜晶体管和第三薄膜晶体管；\n\n[0015]所述数据线与所述第一薄膜晶体管的漏极连接，所述扫描线与所述第一薄膜晶体管的栅极连接，所述感测线与所述第三薄膜晶体管的栅极连接；\n\n[0016]所述电源线与所述第二薄膜晶体管的漏极连接，所述参考电压线与所述第三薄膜晶体管的源极连接；\n\n[0017]所述第一薄膜晶体管的源极与所述第二薄膜晶体管的栅极连接，所述第二薄膜晶体管的源极与所述第三薄膜晶体管的漏极连接；所述第二薄膜晶体管的源极与所述迷你发光二极管的一端连接，所述迷你发光二极管的另一端与所述公共电压线连接。\n\n[0018]在一些实施例中，所述驱动控制单元还包括存储电容；\n\n[0019]所述第二薄膜晶体管的栅极与所述存储电容的一端连接，所述存储电容的另一端与所述第二薄膜晶体管的源极连接。\n\n[0020]在一些实施例中，所述第三薄膜晶体管的尺寸为第二薄膜晶体管的尺寸的0.5-1.0倍。\n\n[0021]在一些实施例中，所述金属走线的线宽与所述金属走线的线距的比值范围为1:4-1:10。\n\n[0022]在一些实施例中，所述金属走线的线宽不大于80μm。\n\n[0023]在一些实施例中，所述金属走线的材质是Cu或Al。\n\n[0024]本申请实施例提供一种用于透明显示的拼接屏，包括多个如前任一实施例所述的用于透明显示的迷你发光二极管(mini LED)显示面板，所述拼接屏由多个所述迷你发光二极管显示面板通过单排、双排或多排拼接组成；\n\n[0025]所述拼接屏包括覆晶薄膜单元，所述覆晶薄膜单元绑定于多个所述迷你发光二极管显示面板的侧部。\n\n[0026]本申请的效果：本申请公开了一种用于透明显示的迷你发光二极管显示面板及拼接屏。所述显示面板包括阵列基板、设置于所述阵列基板上的多个像素单元；所述阵列基板包括玻璃衬底、设置于所述玻璃衬底上的多个驱动控制单元和金属走线；每一所述驱动控制单元与每一所述像素单元对应连接，所述金属走线与所述驱动控制单元和所述像素单元连接；所述金属走线设置于所述阵列基板的不同膜层上。本申请实施例中利用高透过率的玻璃基板，使金属走线均匀分散在面板内，实现显示面板具有更高的光线透过率和有效提升显示品味。\n\n附图说明\n\n[0027]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0028]图1是本申请一实施例提供的迷你发光二极管显示面板结构示意图；\n\n[0029]图2是本申请一实施例提供的迷你发光二极管显示面板结构示意图；\n\n[0030]图3是本申请一实施例提供的迷你发光二极管显示面板的像素电路图；\n\n[0031]图4是本申请一实施例提供的拼接屏结构示意图。\n\n具体实施方式\n\n[0032]下面将结合本申请的具体实施方案，对本申请实施方案和/或实施例中的技术方案进行清楚、完整的描述，显而易见的，下面所描述的实施方案和/或实施例仅仅是本申请一部分实施方案和/或实施例，而不是全部的实施方案和/或实施例。基于本申请中的实施方案和/或实施例，本领域普通技术人员在没有做出创造性劳动前下所获得的所有其他实施方案和/或实施例，都属于本申请保护范围。\n\n[0033]本申请所提到的方向用语，例如[上]、[下]、[左]、[右]、[前]、[后]、[内]、[外]、[侧]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明和理解本申请，而非用以限制本申请。术语“第一”、“第二”等仅用于描述目的，而不能理解为指示或是暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”等的特征可以明示或者隐含地包括一个或者更多个该特征。\n\n[0034]如图1-3所示，本申请实施例提供的一种用于透明显示的迷你发光二极管显示面板，所述显示面板包括阵列基板、设置于所述阵列基板上的多个像素单元；所述阵列基板包括玻璃衬底、设置于所述玻璃衬底上的多个驱动控制单元和金属走线；\n\n[0035]每一所述驱动控制单元与每一所述像素单元对应连接，所述金属走线与所述驱动控制单元和所述像素单元连接；\n\n[0036]如图1所示，所述驱动控制单元与所述像素单元对应连接，显示面板上分布不同的金属走线，所述金属走线连接驱动控制单元和像素单元，所述像素单元包括miniLED，驱动控制单元中的薄膜晶体管按信号控制miniLED的明暗，实现迷你发光显示面板的透明显示。\n\n[0037]所述金属走线设置于所述阵列基板的不同膜层上。\n\n[0038]如图2所示，所述阵列基板包括玻璃衬底101、栅极层105、栅极绝缘层102、有源层106、层间绝缘层103、源极层107、漏极层108以及平坦层104；所述金属走线3设置于所述阵列基板的不同膜层上。可以理解的是，不同的金属走线设置于玻璃基板的不同膜层之中，充分利用阵列基板的立体空间布局，将金属走线均匀分散于不同层间；如果金属走线在同一膜层上过于集中布置，金属走线之间会存在交叉点，此时在金属走线的信号交叉点处，可能会产生短路的现象，现有技术的解决方法是将金属走线进行绕线处理。本申请将金属走线设置于不同膜层后，即可以规避走线交叉点的情况，又不会产生因金属走线进行绕线而带来的走线分布不均匀的问题，同时减小相邻金属走线之间的信号串扰；金属走线之间的距离可以缩小，提高显示面板的透光率，优化屏幕可视感和有效提升显示品味。\n\n[0039]所述阵列基板包括第一膜层31和第二膜层32；\n\n[0040]所述金属走线3包括电源线Vdd和公共电压线Vss，所述电源线Vdd包括第一电源线和第二电源线，所述公共电压线Vss包括第一公共电压线和第二公共电压线；\n\n[0041]所述第一电源线与所述第一公共电压线设置于所述第一膜层上，所述第二电源线与所述第二公共电压线设置于所述第二膜层上；\n\n[0042]所述第一电源线与所述第二电源线经过孔连接，所述第一公共电压线与所述第二公共电压线经过孔连接。\n\n[0043]所述金属走线还包括扫描线Vscan、数据线Vdata、感测线Vsense和参考电压线Vref；\n\n[0044]所述扫描线Vscan和所述感测线Vsense设置于所述第一膜层31上，所述数据线Vdata和所述参考电压线Vref设置于所述第二膜层32上。\n\n[0045]如图1所示，横向分布的第一电源线与第一公共电压线同在第一膜层上，纵向分布的第二电源线与第二公共电压线同在第二膜层上，均分布置在显示面板的边缘区域；所述第一电源线与所述第二电源线经过孔连接，所述第一公共电压线与所述第二公共电压线经过孔连接，实现不同膜层的走线的电连接。\n\n[0046]如图3所示，像素电路采用3T1C驱动架构，相比于被动式(PM)驱动电路，采用主动式(AM)驱动电路，通过多个薄膜晶体管组成的驱动控制单元单独控制每一mini发光二极管的明暗，能够减少IC的使用数量，有效降低成本。如图2所示，像素电路图中包括RGB三个子像素的连接关系，其中以R子像素的电路连接为例加以说明，其余子像素的连接关系相似，在此不再赘述。\n\n[0047]所述驱动控制单元包括第一薄膜晶体管T1_R、第二薄膜晶体管T2_R和第三薄膜晶体管T3_R；\n\n[0048]所述数据线data_r与所述第一薄膜晶体管T1_R的漏极连接，所述扫描线Vscan与所述第一薄膜晶体管T1_R连接，所述感测线Vsense与所述第三薄膜晶体管T3_R的栅极连接；\n\n[0049]所述电源线Vdd与所述第二薄膜晶体管T2_R的漏极连接，所述参考电压线Vref与所述第三薄膜晶体管T3_R的源极连接；\n\n[0050]所述第一薄膜晶体管T1_R的源极与所述第二薄膜晶体管T2_R的栅极连接，所述第二薄膜晶体管T2_R的源极与所述第三薄膜晶体管T3_R的漏极连接；所述第二薄膜晶体管T2_R的源极与所述迷你发光二极管LED_R的一端连接，所述迷你发光二极管LED_R的另一端与所述公共电压线Vss连接。\n\n[0051]所述驱动控制单元还包括存储电容Cs_R；所述第二薄膜晶体管T2_R的栅极与所述存储电容Cs_R的一端连接，所述存储电容Cs_R的另一端与所述第二薄膜晶体管T2_R的源极连接。\n\n[0052]所述电源线Vdd用于给第二薄膜晶体管T2_R提供工作电压，所述扫描线Vscan用于第一薄膜晶体管T1_R的开关控制，所述感测线Vsense与所述扫描线Vscan同信号端，与所述第三薄膜晶体管T3_R的栅极连接，用于感测电压后补偿薄膜晶体管的电学特性漂移。所述电源线Vdd和所述公共电压线Vss分散于所述阵列基板的四个方向，分别具有四个信号端VDD_L、VDD_R、VDD_U、VDD_D和VSS_L、VSS_R、VSS_U、VSS_D。\n\n[0053]所述第三薄膜晶体管的尺寸为所述第二薄膜晶体管的尺寸的0.5-1.0倍。所述第一薄膜晶体管T1_R为开关薄膜晶体管，所述第二薄膜晶体管T2_R为工作薄膜晶体管，所述第三薄膜晶体管T3_R为补偿薄膜晶体管。\n\n[0054]可以理解的是，第三薄膜晶体管T3_R的大小设定是基于补偿效果和透光率两种因素综合考虑的。既要保证第三薄膜晶体管T3_R的补偿效果，又要控制像素区域的开口率、保证透光率。可以理解的是，如果T3_R的大小不够，不能起到预期的补偿作用，但是如果T3_R的大小过大，其所占的面积过大，减小了像素区域的开口率从而影响透光率，在此优选地设定第三薄膜晶体管T3_R的大小为第二薄膜晶体管T2_R大小的50-100％，在此比例范围内的第三薄膜晶体管T3_R的补偿效果和透光率均满足要求。同时薄膜晶体管(TFT)的大小可根据目标亮度大小，搭配不同迁移率的半导体进行调整。以目标亮度800nits为例，各区域面积占比及对应透光率范围如下：\n\n[0055]\n\n[0056]表1\n\n[0057]如表1所示，选取不同迁移率的半导体材质的薄膜晶体管，如非晶硅(a-si)、铟镓锌氧化物(IGZO)或其他高迁移率的半导体材料；其所占的面积比例不同，搭配不同宽度的金属走线与LED规格，以实现显示面板透光率的优化。金属走线的宽度主要以不影响信号传输为宜，同时保证显示面板的亮度整体均匀分布，显示面板的亮度均匀度Lu最好控制在80％以上，计算公式为Lu＝Lmin/Lmax×100％，式中Lmax为亮度最大值，Lmin为亮度最小值；也可搭配不同的走线厚度进行调整。\n\n[0058]可以理解的是，薄膜晶体管使用IGZO或者更高迁移率的半导体材料，提高薄膜晶体管对像素电极的充放电速率，提高像素的响应速度，实现更快的刷新率；提高了薄膜晶体管的载流子迁移率，降低了阈值电压，减小了漏电流使得薄膜晶体管的性能更稳定。\n\n[0059]所述金属走线的线宽与所述金属走线的线距的比值范围为1:4-1:10，所述金属走线的线宽不大于80μm。\n\n[0060]可以理解的是，显示面板的金属走线的排布与显示面板的可视效果相关联，金属走线的线宽、金属走线的线距、以及金属走线的线宽与金属走线的线距的比值作为重要的影响因素。其中，金属走线的线宽与金属走线的线距的比值范围需要综合考量透过率要求、IR Drop以及金属可视程度。可通过菲林膜测试进行对照实验，首先尝试了在相同透过率情况下不同金属走线的线宽与金属走线的线距比值的设计。如果金属走线的线宽过宽(>80μm)，则观察者会观察到明显的金属走线，降低显示品味；因此优选地限定金属走线的宽度值不应大于80μm。如果金属走线的线宽过细，这样会导致走线电阻大大增加，IR Drop严重，最终导致屏幕不同位置亮度差异增大，也就是离信号输入端近的亮度高，离信号输入端远的亮度低，降低显示品味。而在同样线宽或者线距的情况下，金属走线的线宽与金属走线的线距比值越大，屏幕可实现的透过率越低，也就是金属走线不透光；金属走线的线宽与金属走线的线距比值越小，屏幕可实现的透过率越高。基于屏幕透过率要求、IR Drop以及金属可视程度，优选地限定金属走线的线宽与所述金属走线的线距的比值范围为1:4-1:10。\n\n[0061]所述金属走线的材质是Cu或Al。Cu、Al均为低电阻率的金属材料，在此代替原有的ITO材质的金属走线；使用低电阻率的金属材料可以显著降低金属走线的电阻，同时能够缩小金属走线的线宽，实现更小的间距，显示面板的透明显示的效果更佳。\n\n[0062]如图4所示，本申请实施例提供一种用于透明显示的拼接屏，包括多个如前任一实施例所述的用于透明显示的迷你发光二极管(mini LED)显示面板，所述拼接屏200由多个所述迷你发光二极管显示面板通过单排、双排或多排拼接组成；\n\n[0063]所述拼接屏200包括覆晶薄膜单元(COF)100，所述覆晶薄膜单元100绑定于多个所述迷你发光二极管显示面板的侧部。\n\n[0064]可以理解的是，所述拼接屏200可广泛用于展示柜、橱窗、智慧建筑、信息交通等显示领域，但是现有的拼接屏的透光率不高，用于透明显示时效果较差，而且拼接屏内的各显示面板间的安装拼缝明显，影响屏幕的显示品味。本申请实施例利用高透光率的迷你发光二极管显示面板，透明显示效果更好；所述拼接屏200由多个所述迷你发光二极管显示面板通过单排、双排或多排拼接组成，可以根据不同应用场景的实际需求，简单组装形成任意所需要的屏幕尺寸，拼接屏的应用范围广。同时将所述覆晶薄膜单元100绑定于多个所述迷你发光二极管显示面板的侧部，可置于墙体、机构件等非显示区域，可实现无缝拼接。\n\n[0065]本申请公开了一种用于透明显示的迷你发光二极管显示面板及拼接屏。所述显示面板包括阵列基板、设置于所述阵列基板上的多个像素单元；所述阵列基板包括玻璃衬底、设置于所述玻璃衬底上的多个驱动控制单元和金属走线；每一所述驱动控制单元与每一所述像素单元对应连接，所述金属走线与所述驱动控制单元和所述像素单元连接；所述金属走线设置于所述阵列基板的不同膜层上。本申请实施例中利用高透过率的玻璃基板，使金属走线均匀分散在面板内，实现显示面板具有更高的光线透过率和有效提升显示品味。\n\n[0066]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本申请涉及显示面板技术领域，尤其涉及一种用于透明显示的迷你发光二极管显示面板及拼接屏。\n\n背景技术\n\n[0002]作为新型显示技术的一种，透明显示技术可广泛用于展示柜、橱窗、智慧建筑、信息交通等显示领域，前景广阔。与LCD、OLED和DLP(Digital Light Processing,数字光处理)等透明技术相比，LED透明显示技术可发挥高透光率、高亮度、可大尺寸等优势，是透明显示的最佳实现方式之一。\n\n[0003]目前常规的LED透明显示屏可分为两大类：PCB LED透明屏和LED光电玻璃屏。PCBLED透明屏制程相对成熟，成本较低；但是由于PCB本身不透光，产品总体间距较大，分辨率受限，透光率较低，且视角受限，产品观感差。LED光电玻璃屏的导电玻璃、面层玻璃夹SMD(Surface Mounted Devices，表面贴装器件)，透过率高。但是需要使用带内置IC的SMD级传实现信号控制，导致成本很高。此外目前光电玻璃屏一般使用ITO(Indium tin oxide,氧化铟锡)等方阻较大的材料作为导电金属线路，导致间距很大，颗粒感明显，应用场景受限。\n\n发明内容\n\n[0004]本申请提供一种用于透明显示的迷你发光二极管显示面板及拼接屏，以解决现有的透明显示屏中存在的间距较大，透光率较低的技术问题。\n\n[0005]本申请实施例提供一种用于透明显示的迷你发光二极管(mini LED)显示面板，所述显示面板包括阵列基板、设置于所述阵列基板上的多个像素单元；所述阵列基板包括玻璃衬底、设置于所述玻璃衬底上的多个驱动控制单元和金属走线；\n\n[0006]每一所述驱动控制单元与每一所述像素单元对应连接，所述金属走线与所述驱动控制单元和所述像素单元连接；\n\n[0007]所述金属走线设置于所述阵列基板的不同膜层上。\n\n[0008]在一些实施例中，所述阵列基板包括第一膜层和第二膜层；\n\n[0009]所述金属走线包括电源线和公共电压线，所述电源线包括第一电源线和第二电源线，所述公共电压线包括第一公共电压线和第二公共电压线；\n\n[0010]所述第一电源线与所述第一公共电压线设置于所述第一膜层上，所述第二电源线与所述第二公共电压线设置于所述第二膜层上；\n\n[0011]所述第一电源线与所述第二电源线经过孔连接，所述第一公共电压线与所述第二公共电压线经过孔连接。\n\n[0012]在一些实施例中，所述金属走线还包括扫描线、数据线、感测线和参考电压线；\n\n[0013]所述扫描线和所述感测线设置于所述第一膜层上，所述数据线和所述参考电压线设置于所述第二膜层上。\n\n[0014]在一些实施例中，所述驱动控制单元包括第一薄膜晶体管、第二薄膜晶体管和第三薄膜晶体管；\n\n[0015]所述数据线与所述第一薄膜晶体管的漏极连接，所述扫描线与所述第一薄膜晶体管的栅极连接，所述感测线与所述第三薄膜晶体管的栅极连接；\n\n[0016]所述电源线与所述第二薄膜晶体管的漏极连接，所述参考电压线与所述第三薄膜晶体管的源极连接；\n\n[0017]所述第一薄膜晶体管的源极与所述第二薄膜晶体管的栅极连接，所述第二薄膜晶体管的源极与所述第三薄膜晶体管的漏极连接；所述第二薄膜晶体管的源极与所述迷你发光二极管的一端连接，所述迷你发光二极管的另一端与所述公共电压线连接。\n\n[0018]在一些实施例中，所述驱动控制单元还包括存储电容；\n\n[0019]所述第二薄膜晶体管的栅极与所述存储电容的一端连接，所述存储电容的另一端与所述第二薄膜晶体管的源极连接。\n\n[0020]在一些实施例中，所述第三薄膜晶体管的尺寸为第二薄膜晶体管的尺寸的0.5-1.0倍。\n\n[0021]在一些实施例中，所述金属走线的线宽与所述金属走线的线距的比值范围为1:4-1:10。\n\n[0022]在一些实施例中，所述金属走线的线宽不大于80μm。\n\n[0023]在一些实施例中，所述金属走线的材质是Cu或Al。\n\n[0024]本申请实施例提供一种用于透明显示的拼接屏，包括多个如前任一实施例所述的用于透明显示的迷你发光二极管(mini LED)显示面板，所述拼接屏由多个所述迷你发光二极管显示面板通过单排、双排或多排拼接组成；\n\n[0025]所述拼接屏包括覆晶薄膜单元，所述覆晶薄膜单元绑定于多个所述迷你发光二极管显示面板的侧部。\n\n[0026]本申请的效果：本申请公开了一种用于透明显示的迷你发光二极管显示面板及拼接屏。所述显示面板包括阵列基板、设置于所述阵列基板上的多个像素单元；所述阵列基板包括玻璃衬底、设置于所述玻璃衬底上的多个驱动控制单元和金属走线；每一所述驱动控制单元与每一所述像素单元对应连接，所述金属走线与所述驱动控制单元和所述像素单元连接；所述金属走线设置于所述阵列基板的不同膜层上。本申请实施例中利用高透过率的玻璃基板，使金属走线均匀分散在面板内，实现显示面板具有更高的光线透过率和有效提升显示品味。\n\n附图说明\n\n[0027]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0028]图1是本申请一实施例提供的迷你发光二极管显示面板结构示意图；\n\n[0029]图2是本申请一实施例提供的迷你发光二极管显示面板结构示意图；\n\n[0030]图3是本申请一实施例提供的迷你发光二极管显示面板的像素电路图；\n\n[0031]图4是本申请一实施例提供的拼接屏结构示意图。\n\n具体实施方式\n\n[0032]下面将结合本申请的具体实施方案，对本申请实施方案和/或实施例中的技术方案进行清楚、完整的描述，显而易见的，下面所描述的实施方案和/或实施例仅仅是本申请一部分实施方案和/或实施例，而不是全部的实施方案和/或实施例。基于本申请中的实施方案和/或实施例，本领域普通技术人员在没有做出创造性劳动前下所获得的所有其他实施方案和/或实施例，都属于本申请保护范围。\n\n[0033]本申请所提到的方向用语，例如[上]、[下]、[左]、[右]、[前]、[后]、[内]、[外]、[侧]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明和理解本申请，而非用以限制本申请。术语“第一”、“第二”等仅用于描述目的，而不能理解为指示或是暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”等的特征可以明示或者隐含地包括一个或者更多个该特征。\n\n[0034]如图1-3所示，本申请实施例提供的一种用于透明显示的迷你发光二极管显示面板，所述显示面板包括阵列基板、设置于所述阵列基板上的多个像素单元；所述阵列基板包括玻璃衬底、设置于所述玻璃衬底上的多个驱动控制单元和金属走线；\n\n[0035]每一所述驱动控制单元与每一所述像素单元对应连接，所述金属走线与所述驱动控制单元和所述像素单元连接；\n\n[0036]如图1所示，所述驱动控制单元与所述像素单元对应连接，显示面板上分布不同的金属走线，所述金属走线连接驱动控制单元和像素单元，所述像素单元包括miniLED，驱动控制单元中的薄膜晶体管按信号控制miniLED的明暗，实现迷你发光显示面板的透明显示。\n\n[0037]所述金属走线设置于所述阵列基板的不同膜层上。\n\n[0038]如图2所示，所述阵列基板包括玻璃衬底101、栅极层105、栅极绝缘层102、有源层106、层间绝缘层103、源极层107、漏极层108以及平坦层104；所述金属走线3设置于所述阵列基板的不同膜层上。可以理解的是，不同的金属走线设置于玻璃基板的不同膜层之中，充分利用阵列基板的立体空间布局，将金属走线均匀分散于不同层间；如果金属走线在同一膜层上过于集中布置，金属走线之间会存在交叉点，此时在金属走线的信号交叉点处，可能会产生短路的现象，现有技术的解决方法是将金属走线进行绕线处理。本申请将金属走线设置于不同膜层后，即可以规避走线交叉点的情况，又不会产生因金属走线进行绕线而带来的走线分布不均匀的问题，同时减小相邻金属走线之间的信号串扰；金属走线之间的距离可以缩小，提高显示面板的透光率，优化屏幕可视感和有效提升显示品味。\n\n[0039]所述阵列基板包括第一膜层31和第二膜层32；\n\n[0040]所述金属走线3包括电源线Vdd和公共电压线Vss，所述电源线Vdd包括第一电源线和第二电源线，所述公共电压线Vss包括第一公共电压线和第二公共电压线；\n\n[0041]所述第一电源线与所述第一公共电压线设置于所述第一膜层上，所述第二电源线与所述第二公共电压线设置于所述第二膜层上；\n\n[0042]所述第一电源线与所述第二电源线经过孔连接，所述第一公共电压线与所述第二公共电压线经过孔连接。\n\n[0043]所述金属走线还包括扫描线Vscan、数据线Vdata、感测线Vsense和参考电压线Vref；\n\n[0044]所述扫描线Vscan和所述感测线Vsense设置于所述第一膜层31上，所述数据线Vdata和所述参考电压线Vref设置于所述第二膜层32上。\n\n[0045]如图1所示，横向分布的第一电源线与第一公共电压线同在第一膜层上，纵向分布的第二电源线与第二公共电压线同在第二膜层上，均分布置在显示面板的边缘区域；所述第一电源线与所述第二电源线经过孔连接，所述第一公共电压线与所述第二公共电压线经过孔连接，实现不同膜层的走线的电连接。\n\n[0046]如图3所示，像素电路采用3T1C驱动架构，相比于被动式(PM)驱动电路，采用主动式(AM)驱动电路，通过多个薄膜晶体管组成的驱动控制单元单独控制每一mini发光二极管的明暗，能够减少IC的使用数量，有效降低成本。如图2所示，像素电路图中包括RGB三个子像素的连接关系，其中以R子像素的电路连接为例加以说明，其余子像素的连接关系相似，在此不再赘述。\n\n[0047]所述驱动控制单元包括第一薄膜晶体管T1_R、第二薄膜晶体管T2_R和第三薄膜晶体管T3_R；\n\n[0048]所述数据线data_r与所述第一薄膜晶体管T1_R的漏极连接，所述扫描线Vscan与所述第一薄膜晶体管T1_R连接，所述感测线Vsense与所述第三薄膜晶体管T3_R的栅极连接；\n\n[0049]所述电源线Vdd与所述第二薄膜晶体管T2_R的漏极连接，所述参考电压线Vref与所述第三薄膜晶体管T3_R的源极连接；\n\n[0050]所述第一薄膜晶体管T1_R的源极与所述第二薄膜晶体管T2_R的栅极连接，所述第二薄膜晶体管T2_R的源极与所述第三薄膜晶体管T3_R的漏极连接；所述第二薄膜晶体管T2_R的源极与所述迷你发光二极管LED_R的一端连接，所述迷你发光二极管LED_R的另一端与所述公共电压线Vss连接。\n\n[0051]所述驱动控制单元还包括存储电容Cs_R；所述第二薄膜晶体管T2_R的栅极与所述存储电容Cs_R的一端连接，所述存储电容Cs_R的另一端与所述第二薄膜晶体管T2_R的源极连接。\n\n[0052]所述电源线Vdd用于给第二薄膜晶体管T2_R提供工作电压，所述扫描线Vscan用于第一薄膜晶体管T1_R的开关控制，所述感测线Vsense与所述扫描线Vscan同信号端，与所述第三薄膜晶体管T3_R的栅极连接，用于感测电压后补偿薄膜晶体管的电学特性漂移。所述电源线Vdd和所述公共电压线Vss分散于所述阵列基板的四个方向，分别具有四个信号端VDD_L、VDD_R、VDD_U、VDD_D和VSS_L、VSS_R、VSS_U、VSS_D。\n\n[0053]所述第三薄膜晶体管的尺寸为所述第二薄膜晶体管的尺寸的0.5-1.0倍。所述第一薄膜晶体管T1_R为开关薄膜晶体管，所述第二薄膜晶体管T2_R为工作薄膜晶体管，所述第三薄膜晶体管T3_R为补偿薄膜晶体管。\n\n[0054]可以理解的是，第三薄膜晶体管T3_R的大小设定是基于补偿效果和透光率两种因素综合考虑的。既要保证第三薄膜晶体管T3_R的补偿效果，又要控制像素区域的开口率、保证透光率。可以理解的是，如果T3_R的大小不够，不能起到预期的补偿作用，但是如果T3_R的大小过大，其所占的面积过大，减小了像素区域的开口率从而影响透光率，在此优选地设定第三薄膜晶体管T3_R的大小为第二薄膜晶体管T2_R大小的50-100％，在此比例范围内的第三薄膜晶体管T3_R的补偿效果和透光率均满足要求。同时薄膜晶体管(TFT)的大小可根据目标亮度大小，搭配不同迁移率的半导体进行调整。以目标亮度800nits为例，各区域面积占比及对应透光率范围如下：\n\n[0055]\n\n[0056]表1\n\n[0057]如表1所示，选取不同迁移率的半导体材质的薄膜晶体管，如非晶硅(a-si)、铟镓锌氧化物(IGZO)或其他高迁移率的半导体材料；其所占的面积比例不同，搭配不同宽度的金属走线与LED规格，以实现显示面板透光率的优化。金属走线的宽度主要以不影响信号传输为宜，同时保证显示面板的亮度整体均匀分布，显示面板的亮度均匀度Lu最好控制在80％以上，计算公式为Lu＝Lmin/Lmax×100％，式中Lmax为亮度最大值，Lmin为亮度最小值；也可搭配不同的走线厚度进行调整。\n\n[0058]可以理解的是，薄膜晶体管使用IGZO或者更高迁移率的半导体材料，提高薄膜晶体管对像素电极的充放电速率，提高像素的响应速度，实现更快的刷新率；提高了薄膜晶体管的载流子迁移率，降低了阈值电压，减小了漏电流使得薄膜晶体管的性能更稳定。\n\n[0059]所述金属走线的线宽与所述金属走线的线距的比值范围为1:4-1:10，所述金属走线的线宽不大于80μm。\n\n[0060]可以理解的是，显示面板的金属走线的排布与显示面板的可视效果相关联，金属走线的线宽、金属走线的线距、以及金属走线的线宽与金属走线的线距的比值作为重要的影响因素。其中，金属走线的线宽与金属走线的线距的比值范围需要综合考量透过率要求、IR Drop以及金属可视程度。可通过菲林膜测试进行对照实验，首先尝试了在相同透过率情况下不同金属走线的线宽与金属走线的线距比值的设计。如果金属走线的线宽过宽(>80μm)，则观察者会观察到明显的金属走线，降低显示品味；因此优选地限定金属走线的宽度值不应大于80μm。如果金属走线的线宽过细，这样会导致走线电阻大大增加，IR Drop严重，最终导致屏幕不同位置亮度差异增大，也就是离信号输入端近的亮度高，离信号输入端远的亮度低，降低显示品味。而在同样线宽或者线距的情况下，金属走线的线宽与金属走线的线距比值越大，屏幕可实现的透过率越低，也就是金属走线不透光；金属走线的线宽与金属走线的线距比值越小，屏幕可实现的透过率越高。基于屏幕透过率要求、IR Drop以及金属可视程度，优选地限定金属走线的线宽与所述金属走线的线距的比值范围为1:4-1:10。\n\n[0061]所述金属走线的材质是Cu或Al。Cu、Al均为低电阻率的金属材料，在此代替原有的ITO材质的金属走线；使用低电阻率的金属材料可以显著降低金属走线的电阻，同时能够缩小金属走线的线宽，实现更小的间距，显示面板的透明显示的效果更佳。\n\n[0062]如图4所示，本申请实施例提供一种用于透明显示的拼接屏，包括多个如前任一实施例所述的用于透明显示的迷你发光二极管(mini LED)显示面板，所述拼接屏200由多个所述迷你发光二极管显示面板通过单排、双排或多排拼接组成；\n\n[0063]所述拼接屏200包括覆晶薄膜单元(COF)100，所述覆晶薄膜单元100绑定于多个所述迷你发光二极管显示面板的侧部。\n\n[0064]可以理解的是，所述拼接屏200可广泛用于展示柜、橱窗、智慧建筑、信息交通等显示领域，但是现有的拼接屏的透光率不高，用于透明显示时效果较差，而且拼接屏内的各显示面板间的安装拼缝明显，影响屏幕的显示品味。本申请实施例利用高透光率的迷你发光二极管显示面板，透明显示效果更好；所述拼接屏200由多个所述迷你发光二极管显示面板通过单排、双排或多排拼接组成，可以根据不同应用场景的实际需求，简单组装形成任意所需要的屏幕尺寸，拼接屏的应用范围广。同时将所述覆晶薄膜单元100绑定于多个所述迷你发光二极管显示面板的侧部，可置于墙体、机构件等非显示区域，可实现无缝拼接。\n\n[0065]本申请公开了一种用于透明显示的迷你发光二极管显示面板及拼接屏。所述显示面板包括阵列基板、设置于所述阵列基板上的多个像素单元；所述阵列基板包括玻璃衬底、设置于所述玻璃衬底上的多个驱动控制单元和金属走线；每一所述驱动控制单元与每一所述像素单元对应连接，所述金属走线与所述驱动控制单元和所述像素单元连接；所述金属走线设置于所述阵列基板的不同膜层上。本申请实施例中利用高透过率的玻璃基板，使金属走线均匀分散在面板内，实现显示面板具有更高的光线透过率和有效提升显示品味。\n\n[0066]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10898, 23952, '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种微型发光二极管转移设备及其转移方法。\n\n背景技术\n\n[0002]微型发光二极管显示面板(Micro-LED面板、Mini-LED面板)发展成未来显示技术的热点之一，和目前的LCD、OLED显示器件相比，具有反应快、高色域、高PPI、低能耗等优势；但其技术难点多且技术复杂，特别是其关键技术：巨量转移技术。\n\n[0003]微型发光二极管在制作完成后需要逐一转移到阵列基板的所需位置，需要转移的微型发光二极管的数量大、转移效率低，且转移后的位置精度要求高，需耗费大量的资源。\n\n发明内容\n\n[0004]本申请实施例提供一种微型发光二极管转移设备及其转移方法，可以解决现有转移技术中技术难点多、转移效率低的问题，减小资源消耗，提升转移效率。\n\n[0005]本申请实施例提供一种微型发光二极管转移设备，包括：\n\n[0006]支架，所述支架包括至少两个吸附臂，所述至少两个吸附臂的同一端为固定端，相对的另一端为开放端，且所述至少两个吸附臂在所述固定端活动连接；\n\n[0007]吸附头，用以抓取微型发光二极管，所述吸附头连接于相对应的所述吸附臂的开放端。\n\n[0008]可选的，在本申请的一些实施例中，相邻的两所述吸附臂的张开角度可调节至第一预设角度和第二预设角度，所述第二预设角度大于所述第一预设角度；\n\n[0009]所述吸附臂张开在所述第一预设角度时，所述吸附头抓取承载基板上的所述微型发光二极管；\n\n[0010]所述吸附臂张开在所述第二预设角度时，所述吸附头将从所述承载基板上抓取的所述微型发光二极管转移至阵列基板。\n\n[0011]可选的，在本申请的一些实施例中，所述吸附臂的数量大于2，所述支架呈爪形结构；\n\n[0012]所述微型发光二极管转移设备还包括控制机构，所述控制机构连接于所述支架的固定端，用以控制所述吸附臂的张开角度，所述控制机构包括多个万向球，所述吸附臂在所述固定端与对应的所述万向球连接。\n\n[0013]可选的，在本申请的一些实施例中，相邻的两所述吸附臂的张开角度的范围在0至180度之间。\n\n[0014]可选的，在本申请的一些实施例中，所述吸附头通过静电吸附、磁力吸附、胶水吸附中任一种吸附方式抓取所述微型发光二极管。\n\n[0015]相应的，本申请实施例还提供一种微型发光二极管转移方法，采用上述任一项所述的微型发光二极管转移设备，并包括以下步骤：\n\n[0016]步骤S100，提供一承载基板和一阵列基板，所述承载基板上设有多个所述微型发光二极管，相邻的所述微型发光二极管之间具有第一预设距离，所述阵列基板上设有多个焊接端子，相邻的两所述焊接端子之间具有第二预设距离，所述第二预设距离大于所述第一预设距离；\n\n[0017]步骤S200，使用所述微型发光二极管转移设备转移所述微型发光二极管，使所述吸附臂张开至第一预设角度，所述吸附头从所述承载基板抓取所述微型发光二极管，使所述吸附臂张开至第二预设角度，转移所抓取的所述微型发光二极管至所述阵列基板。\n\n[0018]可选的，在本申请的一些实施例中，所述步骤S200包括如下步骤：\n\n[0019]步骤S210：抓取所述微型发光二极管，所述吸附臂张开至所述第一预设角度，相邻所述吸附头之间的距离对应于所述承载基板上的相邻所述微型发光二极管的所述第一预设距离，通过所述吸附头抓取所述微型发光二极管；\n\n[0020]步骤S220：所述吸附头抓取的所述微型发光二极管对位于对应的所述焊接端子，所述吸附臂张开至所述第二预设角度，相邻所述吸附头之间的距离对应于所述阵列基板上的相邻所述焊接端子的所述第二预设距离，将所述吸附头所抓取的所述微型发光二极管与所述阵列基板上对应的所述焊接端子对位；\n\n[0021]步骤S230：所述吸附头释放所述微型发光二极管，所述微型发光二极管转移设备卸除吸附力，所述吸附头释放所抓取的所述微型发光二极管至所述阵列基板，所述微型发光二极管与所述阵列基板上对应的所述焊接端子连接。\n\n[0022]可选的，在本申请的一些实施例中，所述承载基板上的所述微型发光二极管由晶圆上转移而来。\n\n[0023]可选的，在本申请的一些实施例中，所述焊接端子上还设有锡膏。\n\n[0024]可选的，在本申请的一些实施例中，所述第一预设角度为α，所述第一预设距离为L1，所述吸附臂的长度为H，则满足如下公式：\n\n[0025]L1＝2*H*sin(α/2)；\n\n[0026]所述第二预设角度为β，所述第二预设距离为L2，则满足如下公式：\n\n[0027]L2＝2*H*sin(β/2)。\n\n[0028]本申请实施例中，提出了一种微型发光二极管转移设备及其转移方法，转移设备具有支架，支架包括至少两个吸附臂，吸附臂的张开角度可以调节，通过可以调节的吸附臂来抓取承载基板上的微型发光二极管，并转移至阵列基板上，可以极大的提升转移效率，减小资源消耗。\n\n附图说明\n\n[0029]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0030]图1是本申请一实施例提供的微型发光二极管转移设备的示意图；\n\n[0031]图2是本申请一实施例提供的微型发光二极管转移过程中吸附臂张开至第一预设角度的示意图；\n\n[0032]图3是本申请一实施例提供的微型发光二极管转移过程中吸附臂张开至第二预设角度的示意图；\n\n[0033]图4是本申请一实施例提供的又一微型发光二极管转移设备的示意图；\n\n[0034]图5是本申请一实施例提供的设有微型发光二极管的承载基板的示意图；\n\n[0035]图6是本申请一实施例提供的阵列基板的示意图；\n\n[0036]图7是本申请一实施例提供的微型发光二极管转移过程中的吸附臂抓取微型发光二极管的示意图；\n\n[0037]图8是本申请一实施例提供的微型发光二极管转移过程中的吸附臂释放微型发光二极管的示意图；\n\n[0038]图9是本申请一实施例提供的微型发光二极管转移的整体步骤的示意图；\n\n[0039]图10是本申请一实施例提供的微型发光二极管转移的详细步骤的示意图。\n\n具体实施方式\n\n[0040]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0041]本申请实施例提供一种微型发光二极管转移设备及其转移方法。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0042]实施例一、\n\n[0043]请参阅图1、图2、图3，本申请的实施例提供了一种微型发光二极管转移设备300。\n\n[0044]微型发光二极管转移设备300包括：支架302，支架302包括至少两个吸附臂3021，至少两个吸附臂3021的同一端为固定端31，相对的另一端为开放端32，且至少两个吸附臂3021在固定端31活动连接；吸附头303，用以抓取微型发光二极管500，吸附头303连接于相对应的吸附臂的开放端32。\n\n[0045]其中，请参阅图2、图3，相邻的两吸附臂3021的张开角度可调节至第一预设角度α和第二预设角度β，第二预设角度β大于第一预设角度α。请参阅图1、图2，吸附臂3021张开在第一预设角度α时，吸附头303抓取承载基板200上的微型发光二极管500；请参阅图1、图3，吸附臂张3021开在第二预设角度β时，吸附头303将从承载基板200上抓取的微型发光二极管500转移至阵列基板100。\n\n[0046]具体的，承载基板200的基底可以为玻璃等材质，在此不限定，承载基板200上设有微型发光二极管500，微型发光二极管500具有绑定端子，绑定端子可以包括阴极与阳极。\n\n[0047]其中，在一些实施例中，微型发光二极管500与承载基板200通过静电吸附、胶水吸附、磁性吸附中的任一种方式连接，微型发光二极管500与承载基板200还可以由其他方式连接。\n\n[0048]具体的，阵列基板100的基底可以为玻璃等材质，在此不限定。阵列基板100上设有可以驱动微型发光二极管500发光的走线、电路等结构。阵列基板100上设有焊接端子110，焊接端子110可以包括与微型发光二极管500的阴极和阳极相对应的第一焊接端子和第二焊接端子。\n\n[0049]具体的，请参阅图1、图2、图3，吸附臂3021张开在第一预设角度α时，吸附头303抓取承载基板200上的微型发光二极管500；吸附臂3021张开在第二预设角度β时，吸附头303将从承载基板200上抓取的微型发光二极管500转移至阵列基板100。微型发光二极管500从承载基板200上转移至阵列基板100后，微型发光二极管500的绑定端子与阵列基板100上对应的焊接端子110电性连接。具体的，可以是微型发光二极管500的绑定端子中的阳极与焊接端子110中的第一焊接端子电性连接，微型发光二极管500的绑定端子中的阴极与焊接端子110中的第二焊接端子电性连接。\n\n[0050]其中，在一些实施例中，相邻的两吸附臂3021的张开角度可调节至第一预设角度α和第二预设角度β，第二预设角度β大于第一预设角度α。\n\n[0051]其中，在一些实施例中，相邻的两吸附臂3021的张开角度的范围在0至180度之间。\n\n[0052]其中，在一些实施例中，吸附头303通过静电吸附、磁力吸附、胶水吸附中任一种吸附方式抓取微型发光二极管500。在一些实施例中，吸附头303还可以通过其他方式吸附或抓取微型发光二极管500。\n\n[0053]需要注意的是，吸附头303抓取微型发光二极管500的吸附力或抓取力要大于承载基板对微型发光二极管500的吸附力，例如吸附头303通过胶水抓取微型发光二极管500的吸附力大于承载基板200通过静电吸附对微型发光二极管500的吸附力，例如吸附头303通过磁力吸附抓取微型发光二极管500的吸附力大于承载基板200通过静电吸附对微型发光二极管500的吸附力，例如吸附头303通过磁力吸附抓取微型发光二极管500的吸附力大于承载基板200通过磁力吸附对微型发光二极管500的吸附力。\n\n[0054]本实施例提出的微型发光二极管转移设备可以快速转移微型发光二极管，可以极大的提升转移效率，减小资源消耗。\n\n[0055]实施例二、\n\n[0056]请参阅图4，相比于实施例一，本实施例提供了一种微型发光二极管转移设备300，进一步详细描述了吸附臂3021的数量大于2的情况。\n\n[0057]微型发光二极管转移设备300的吸附臂的数量大于2，如图4所示，支架302呈爪形结构。微型发光二极管转移设备300还包括控制机构301，控制机构301连接于支架的固定端31，用以控制吸附臂3021的张开角度，控制机构301包括多个万向球(图未示)，吸附臂3021在固定端31与对应的万向球连接。\n\n[0058]具体的，吸附臂的数量大于2，支架302呈爪形结构，图4示意了吸附臂3021的数量为3的一种示例，图4中3个吸附臂3021呈现爪形，可以同时从承载基板200上抓取3个微型发光二极管500。\n\n[0059]其中，在一些实施例中，相邻的两吸附臂3021的张开角度可调节至第一预设角度α和第二预设角度β，第二预设角度β大于第一预设角度α。请参阅图1、图2，吸附臂3021张开在第一预设角度α时，吸附头3021抓取承载基板200上的微型发光二极管500；请参阅图1、图3，吸附臂3021张开在第二预设角度β时，吸附头3021将从承载基板200上抓取的微型发光二极管500转移至阵列基板100。相邻的两吸附臂3021可以指沿顺时针指向时，相邻的两吸附臂3021的张开角度可调节至第一预设角度α和第二预设角度β。\n\n[0060]其中，在一些实施例中，相邻的两吸附臂3021的张开角度的范围在0至180度之间。\n\n[0061]其中，在一些实施例中，微型发光二极管500与承载基板200通过静电吸附、胶水吸附、磁性吸附中的任一种方式连接，微型发光二极管500与承载基板200还可以由其他方式连接。\n\n[0062]其中，在一些实施例中，吸附头303通过静电吸附、磁力吸附、胶水吸附中任一种吸附方式抓取微型发光二极管500。在一些实施例中，吸附头303还可以通过其他方式吸附或抓取微型发光二极管500。\n\n[0063]需要注意的是，吸附头303抓取微型发光二极管500的吸附力或抓取力要大于承载基板对微型发光二极管500的吸附力，例如吸附头303通过胶水抓取微型发光二极管500的吸附力大于承载基板200通过静电吸附对微型发光二极管500的吸附力，例如吸附头303通过磁力吸附抓取微型发光二极管500的吸附力大于承载基板200通过静电吸附对微型发光二极管500的吸附力，例如吸附头303通过磁力吸附抓取微型发光二极管500的吸附力大于承载基板200通过磁力吸附对微型发光二极管500的吸附力。\n\n[0064]本实施例提出的微型发光二极管转移设备可以快速转移微型发光二极管，可以极大的提升转移效率，减小资源消耗。\n\n[0065]实施例三、\n\n[0066]请参阅图5至图10，本申请的实施例提供了一种微型发光二极管转移方法，采用上述实施例任一项的微型发光二极管转移设备，并包括如下步骤S100、步骤S200。\n\n[0067]步骤S100，如图5、图6所示，提供一承载基板200和一阵列基板100，承载基板200上设有多个微型发光二极管500，相邻的微型发光二极管500之间具有第一预设距离L1，阵列基板上100设有多个焊接端子110，相邻的两焊接端子100之间具有第二预设距离L2，第二预设距离L2大于第一预设距离L1。\n\n[0068]具体的，承载基板200的基底可以为玻璃等材质，在此不限定，承载基板200上设有微型发光二极管500，微型发光二极管500具有绑定端子，绑定端子可以包括阴极与阳极。\n\n[0069]其中，在一些实施例中，微型发光二极管500与承载基板200通过静电吸附、胶水吸附、磁性吸附中的任一种方式连接，微型发光二极管500与承载基板200还可以由其他方式连接。\n\n[0070]具体的，阵列基板100的基底可以为玻璃等材质，在此不限定。阵列基板100上设有可以驱动微型发光二极管500发光的走线、电路等结构。阵列基板100上设有焊接端子110，焊接端子110可以包括与微型发光二极管500的阴极和阳极相对应的第一焊接端子和第二焊接端子。\n\n[0071]其中，承载基板200上的微型发光二极管500由晶圆上转移而来。\n\n[0072]步骤S200，使用微型发光二极管转移设备300转移微型发光二极管500，使吸附臂3021张开至第一预设角度α，吸附头从承载基板200抓取微型发光二极管500，使吸附臂3021张开至第二预设角度β，转移所抓取的微型发光二极管500至所述阵列基板100。\n\n[0073]其中，如图7、图8所示，步骤S200包括如下的步骤S210、S220、S230。\n\n[0074]步骤S210：抓取微型发光二极管500，吸附臂3021张开至第一预设角度α，相邻吸附头之303间的距离对应于承载基板200上的相邻微型发光二极管500的第一预设距离L1，通过吸附头303抓取微型发光二极管500。\n\n[0075]具体的，在一些实施例中，吸附头303通过静电吸附、磁力吸附、胶水吸附中任一种吸附方式抓取微型发光二极管500。在一些实施例中，吸附头303还可以通过其他方式吸附或抓取微型发光二极管500。\n\n[0076]具体的，相邻吸附头之303间的距离对应于承载基板200上的相邻微型发光二极管500的第一预设距离L1，是指吸附臂3021张开至第一预设角度α时，相邻吸附头之303间的距离使得吸附臂3021连接的吸附头303正好抓取相邻的微型发光二极管500。\n\n[0077]步骤S220：吸附头303抓取的微型发光二极管500对位于对应的焊接端子110，吸附臂3021张开至第二预设角度β，相邻吸附头303之间的距离对应于阵列基板100上的相邻焊接端子110的第二预设距离L2，将吸附头303所抓取的微型发光二极管500与阵列基板100上对应的焊接端子110对位。\n\n[0078]具体的，相邻吸附头303之间的距离对应于阵列基板100上的相邻焊接端子110的第二预设距离L2，是指吸附臂3021张开至第二预设角度β时，相邻吸附头之303间的距离使得吸附头303抓取的相邻微型发光二极管500正好可以与任意的相邻焊接端子110对位。\n\n[0079]步骤S230：吸附头303释放微型发光二极管500，微型发光二极管转移设备300卸除吸附力，吸附头303释放所抓取的微型发光二极管500至阵列基板100，微型发光二极管500与阵列基板100上对应的焊接端子110连接。\n\n[0080]具体的，吸附头303通过静电吸附、磁力吸附、胶水吸附中任一种吸附方式抓取微型发光二极管500，在步骤S230中，可以卸除这些吸附力，或者使得微型发光二极管500与焊接端子110固定连接，微型发光二极管500与焊接端子110的固定连接力大于吸附头303抓取微型发光二极管500的吸附力。\n\n[0081]其中，如图8所示，在步骤S220之前，还可以包括在焊接端子110上还设有锡膏400，锡膏400起到固定连接微型发光二极管500的作用。\n\n[0082]具体的，除锡膏材料之外，还可以设置其他材料代替锡膏400，例如银浆等。\n\n[0083]其中，如图1、图2所示，第一预设角度为α，第一预设距离为L1，吸附臂3021的长度为H，则满足如下公式：\n\n[0084]L1＝2*H*sin(α/2)。\n\n[0085]其中，如图1、图3所示，第二预设角度为β，第二预设距离为L2，则满足如下公式：\n\n[0086]L2＝2*H*sin(β/2)。\n\n[0087]本申请实施例中，提出了一种微型发光二极管转移设备及其转移方法，转移设备具有支架，支架包括至少两个吸附臂，吸附臂的张开角度可以调节，通过可以调节张开角度的吸附臂来抓取承载基板上的微型发光二极管，并转移至阵列基板上，可以极大的提升转移效率，减小资源消耗。\n\n[0088]以上对本申请实施例所提供的一种微型发光二极管转移设备及其转移方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种微型发光二极管转移设备及其转移方法。\n\n背景技术\n\n[0002]微型发光二极管显示面板(Micro-LED面板、Mini-LED面板)发展成未来显示技术的热点之一，和目前的LCD、OLED显示器件相比，具有反应快、高色域、高PPI、低能耗等优势；但其技术难点多且技术复杂，特别是其关键技术：巨量转移技术。\n\n[0003]微型发光二极管在制作完成后需要逐一转移到阵列基板的所需位置，需要转移的微型发光二极管的数量大、转移效率低，且转移后的位置精度要求高，需耗费大量的资源。\n\n发明内容\n\n[0004]本申请实施例提供一种微型发光二极管转移设备及其转移方法，可以解决现有转移技术中技术难点多、转移效率低的问题，减小资源消耗，提升转移效率。\n\n[0005]本申请实施例提供一种微型发光二极管转移设备，包括：\n\n[0006]支架，所述支架包括至少两个吸附臂，所述至少两个吸附臂的同一端为固定端，相对的另一端为开放端，且所述至少两个吸附臂在所述固定端活动连接；\n\n[0007]吸附头，用以抓取微型发光二极管，所述吸附头连接于相对应的所述吸附臂的开放端。\n\n[0008]可选的，在本申请的一些实施例中，相邻的两所述吸附臂的张开角度可调节至第一预设角度和第二预设角度，所述第二预设角度大于所述第一预设角度；\n\n[0009]所述吸附臂张开在所述第一预设角度时，所述吸附头抓取承载基板上的所述微型发光二极管；\n\n[0010]所述吸附臂张开在所述第二预设角度时，所述吸附头将从所述承载基板上抓取的所述微型发光二极管转移至阵列基板。\n\n[0011]可选的，在本申请的一些实施例中，所述吸附臂的数量大于2，所述支架呈爪形结构；\n\n[0012]所述微型发光二极管转移设备还包括控制机构，所述控制机构连接于所述支架的固定端，用以控制所述吸附臂的张开角度，所述控制机构包括多个万向球，所述吸附臂在所述固定端与对应的所述万向球连接。\n\n[0013]可选的，在本申请的一些实施例中，相邻的两所述吸附臂的张开角度的范围在0至180度之间。\n\n[0014]可选的，在本申请的一些实施例中，所述吸附头通过静电吸附、磁力吸附、胶水吸附中任一种吸附方式抓取所述微型发光二极管。\n\n[0015]相应的，本申请实施例还提供一种微型发光二极管转移方法，采用上述任一项所述的微型发光二极管转移设备，并包括以下步骤：\n\n[0016]步骤S100，提供一承载基板和一阵列基板，所述承载基板上设有多个所述微型发光二极管，相邻的所述微型发光二极管之间具有第一预设距离，所述阵列基板上设有多个焊接端子，相邻的两所述焊接端子之间具有第二预设距离，所述第二预设距离大于所述第一预设距离；\n\n[0017]步骤S200，使用所述微型发光二极管转移设备转移所述微型发光二极管，使所述吸附臂张开至第一预设角度，所述吸附头从所述承载基板抓取所述微型发光二极管，使所述吸附臂张开至第二预设角度，转移所抓取的所述微型发光二极管至所述阵列基板。\n\n[0018]可选的，在本申请的一些实施例中，所述步骤S200包括如下步骤：\n\n[0019]步骤S210：抓取所述微型发光二极管，所述吸附臂张开至所述第一预设角度，相邻所述吸附头之间的距离对应于所述承载基板上的相邻所述微型发光二极管的所述第一预设距离，通过所述吸附头抓取所述微型发光二极管；\n\n[0020]步骤S220：所述吸附头抓取的所述微型发光二极管对位于对应的所述焊接端子，所述吸附臂张开至所述第二预设角度，相邻所述吸附头之间的距离对应于所述阵列基板上的相邻所述焊接端子的所述第二预设距离，将所述吸附头所抓取的所述微型发光二极管与所述阵列基板上对应的所述焊接端子对位；\n\n[0021]步骤S230：所述吸附头释放所述微型发光二极管，所述微型发光二极管转移设备卸除吸附力，所述吸附头释放所抓取的所述微型发光二极管至所述阵列基板，所述微型发光二极管与所述阵列基板上对应的所述焊接端子连接。\n\n[0022]可选的，在本申请的一些实施例中，所述承载基板上的所述微型发光二极管由晶圆上转移而来。\n\n[0023]可选的，在本申请的一些实施例中，所述焊接端子上还设有锡膏。\n\n[0024]可选的，在本申请的一些实施例中，所述第一预设角度为α，所述第一预设距离为L1，所述吸附臂的长度为H，则满足如下公式：\n\n[0025]L1＝2*H*sin(α/2)；\n\n[0026]所述第二预设角度为β，所述第二预设距离为L2，则满足如下公式：\n\n[0027]L2＝2*H*sin(β/2)。\n\n[0028]本申请实施例中，提出了一种微型发光二极管转移设备及其转移方法，转移设备具有支架，支架包括至少两个吸附臂，吸附臂的张开角度可以调节，通过可以调节的吸附臂来抓取承载基板上的微型发光二极管，并转移至阵列基板上，可以极大的提升转移效率，减小资源消耗。\n\n附图说明\n\n[0029]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0030]图1是本申请一实施例提供的微型发光二极管转移设备的示意图；\n\n[0031]图2是本申请一实施例提供的微型发光二极管转移过程中吸附臂张开至第一预设角度的示意图；\n\n[0032]图3是本申请一实施例提供的微型发光二极管转移过程中吸附臂张开至第二预设角度的示意图；\n\n[0033]图4是本申请一实施例提供的又一微型发光二极管转移设备的示意图；\n\n[0034]图5是本申请一实施例提供的设有微型发光二极管的承载基板的示意图；\n\n[0035]图6是本申请一实施例提供的阵列基板的示意图；\n\n[0036]图7是本申请一实施例提供的微型发光二极管转移过程中的吸附臂抓取微型发光二极管的示意图；\n\n[0037]图8是本申请一实施例提供的微型发光二极管转移过程中的吸附臂释放微型发光二极管的示意图；\n\n[0038]图9是本申请一实施例提供的微型发光二极管转移的整体步骤的示意图；\n\n[0039]图10是本申请一实施例提供的微型发光二极管转移的详细步骤的示意图。\n\n具体实施方式\n\n[0040]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0041]本申请实施例提供一种微型发光二极管转移设备及其转移方法。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0042]实施例一、\n\n[0043]请参阅图1、图2、图3，本申请的实施例提供了一种微型发光二极管转移设备300。\n\n[0044]微型发光二极管转移设备300包括：支架302，支架302包括至少两个吸附臂3021，至少两个吸附臂3021的同一端为固定端31，相对的另一端为开放端32，且至少两个吸附臂3021在固定端31活动连接；吸附头303，用以抓取微型发光二极管500，吸附头303连接于相对应的吸附臂的开放端32。\n\n[0045]其中，请参阅图2、图3，相邻的两吸附臂3021的张开角度可调节至第一预设角度α和第二预设角度β，第二预设角度β大于第一预设角度α。请参阅图1、图2，吸附臂3021张开在第一预设角度α时，吸附头303抓取承载基板200上的微型发光二极管500；请参阅图1、图3，吸附臂张3021开在第二预设角度β时，吸附头303将从承载基板200上抓取的微型发光二极管500转移至阵列基板100。\n\n[0046]具体的，承载基板200的基底可以为玻璃等材质，在此不限定，承载基板200上设有微型发光二极管500，微型发光二极管500具有绑定端子，绑定端子可以包括阴极与阳极。\n\n[0047]其中，在一些实施例中，微型发光二极管500与承载基板200通过静电吸附、胶水吸附、磁性吸附中的任一种方式连接，微型发光二极管500与承载基板200还可以由其他方式连接。\n\n[0048]具体的，阵列基板100的基底可以为玻璃等材质，在此不限定。阵列基板100上设有可以驱动微型发光二极管500发光的走线、电路等结构。阵列基板100上设有焊接端子110，焊接端子110可以包括与微型发光二极管500的阴极和阳极相对应的第一焊接端子和第二焊接端子。\n\n[0049]具体的，请参阅图1、图2、图3，吸附臂3021张开在第一预设角度α时，吸附头303抓取承载基板200上的微型发光二极管500；吸附臂3021张开在第二预设角度β时，吸附头303将从承载基板200上抓取的微型发光二极管500转移至阵列基板100。微型发光二极管500从承载基板200上转移至阵列基板100后，微型发光二极管500的绑定端子与阵列基板100上对应的焊接端子110电性连接。具体的，可以是微型发光二极管500的绑定端子中的阳极与焊接端子110中的第一焊接端子电性连接，微型发光二极管500的绑定端子中的阴极与焊接端子110中的第二焊接端子电性连接。\n\n[0050]其中，在一些实施例中，相邻的两吸附臂3021的张开角度可调节至第一预设角度α和第二预设角度β，第二预设角度β大于第一预设角度α。\n\n[0051]其中，在一些实施例中，相邻的两吸附臂3021的张开角度的范围在0至180度之间。\n\n[0052]其中，在一些实施例中，吸附头303通过静电吸附、磁力吸附、胶水吸附中任一种吸附方式抓取微型发光二极管500。在一些实施例中，吸附头303还可以通过其他方式吸附或抓取微型发光二极管500。\n\n[0053]需要注意的是，吸附头303抓取微型发光二极管500的吸附力或抓取力要大于承载基板对微型发光二极管500的吸附力，例如吸附头303通过胶水抓取微型发光二极管500的吸附力大于承载基板200通过静电吸附对微型发光二极管500的吸附力，例如吸附头303通过磁力吸附抓取微型发光二极管500的吸附力大于承载基板200通过静电吸附对微型发光二极管500的吸附力，例如吸附头303通过磁力吸附抓取微型发光二极管500的吸附力大于承载基板200通过磁力吸附对微型发光二极管500的吸附力。\n\n[0054]本实施例提出的微型发光二极管转移设备可以快速转移微型发光二极管，可以极大的提升转移效率，减小资源消耗。\n\n[0055]实施例二、\n\n[0056]请参阅图4，相比于实施例一，本实施例提供了一种微型发光二极管转移设备300，进一步详细描述了吸附臂3021的数量大于2的情况。\n\n[0057]微型发光二极管转移设备300的吸附臂的数量大于2，如图4所示，支架302呈爪形结构。微型发光二极管转移设备300还包括控制机构301，控制机构301连接于支架的固定端31，用以控制吸附臂3021的张开角度，控制机构301包括多个万向球(图未示)，吸附臂3021在固定端31与对应的万向球连接。\n\n[0058]具体的，吸附臂的数量大于2，支架302呈爪形结构，图4示意了吸附臂3021的数量为3的一种示例，图4中3个吸附臂3021呈现爪形，可以同时从承载基板200上抓取3个微型发光二极管500。\n\n[0059]其中，在一些实施例中，相邻的两吸附臂3021的张开角度可调节至第一预设角度α和第二预设角度β，第二预设角度β大于第一预设角度α。请参阅图1、图2，吸附臂3021张开在第一预设角度α时，吸附头3021抓取承载基板200上的微型发光二极管500；请参阅图1、图3，吸附臂3021张开在第二预设角度β时，吸附头3021将从承载基板200上抓取的微型发光二极管500转移至阵列基板100。相邻的两吸附臂3021可以指沿顺时针指向时，相邻的两吸附臂3021的张开角度可调节至第一预设角度α和第二预设角度β。\n\n[0060]其中，在一些实施例中，相邻的两吸附臂3021的张开角度的范围在0至180度之间。\n\n[0061]其中，在一些实施例中，微型发光二极管500与承载基板200通过静电吸附、胶水吸附、磁性吸附中的任一种方式连接，微型发光二极管500与承载基板200还可以由其他方式连接。\n\n[0062]其中，在一些实施例中，吸附头303通过静电吸附、磁力吸附、胶水吸附中任一种吸附方式抓取微型发光二极管500。在一些实施例中，吸附头303还可以通过其他方式吸附或抓取微型发光二极管500。\n\n[0063]需要注意的是，吸附头303抓取微型发光二极管500的吸附力或抓取力要大于承载基板对微型发光二极管500的吸附力，例如吸附头303通过胶水抓取微型发光二极管500的吸附力大于承载基板200通过静电吸附对微型发光二极管500的吸附力，例如吸附头303通过磁力吸附抓取微型发光二极管500的吸附力大于承载基板200通过静电吸附对微型发光二极管500的吸附力，例如吸附头303通过磁力吸附抓取微型发光二极管500的吸附力大于承载基板200通过磁力吸附对微型发光二极管500的吸附力。\n\n[0064]本实施例提出的微型发光二极管转移设备可以快速转移微型发光二极管，可以极大的提升转移效率，减小资源消耗。\n\n[0065]实施例三、\n\n[0066]请参阅图5至图10，本申请的实施例提供了一种微型发光二极管转移方法，采用上述实施例任一项的微型发光二极管转移设备，并包括如下步骤S100、步骤S200。\n\n[0067]步骤S100，如图5、图6所示，提供一承载基板200和一阵列基板100，承载基板200上设有多个微型发光二极管500，相邻的微型发光二极管500之间具有第一预设距离L1，阵列基板上100设有多个焊接端子110，相邻的两焊接端子100之间具有第二预设距离L2，第二预设距离L2大于第一预设距离L1。\n\n[0068]具体的，承载基板200的基底可以为玻璃等材质，在此不限定，承载基板200上设有微型发光二极管500，微型发光二极管500具有绑定端子，绑定端子可以包括阴极与阳极。\n\n[0069]其中，在一些实施例中，微型发光二极管500与承载基板200通过静电吸附、胶水吸附、磁性吸附中的任一种方式连接，微型发光二极管500与承载基板200还可以由其他方式连接。\n\n[0070]具体的，阵列基板100的基底可以为玻璃等材质，在此不限定。阵列基板100上设有可以驱动微型发光二极管500发光的走线、电路等结构。阵列基板100上设有焊接端子110，焊接端子110可以包括与微型发光二极管500的阴极和阳极相对应的第一焊接端子和第二焊接端子。\n\n[0071]其中，承载基板200上的微型发光二极管500由晶圆上转移而来。\n\n[0072]步骤S200，使用微型发光二极管转移设备300转移微型发光二极管500，使吸附臂3021张开至第一预设角度α，吸附头从承载基板200抓取微型发光二极管500，使吸附臂3021张开至第二预设角度β，转移所抓取的微型发光二极管500至所述阵列基板100。\n\n[0073]其中，如图7、图8所示，步骤S200包括如下的步骤S210、S220、S230。\n\n[0074]步骤S210：抓取微型发光二极管500，吸附臂3021张开至第一预设角度α，相邻吸附头之303间的距离对应于承载基板200上的相邻微型发光二极管500的第一预设距离L1，通过吸附头303抓取微型发光二极管500。\n\n[0075]具体的，在一些实施例中，吸附头303通过静电吸附、磁力吸附、胶水吸附中任一种吸附方式抓取微型发光二极管500。在一些实施例中，吸附头303还可以通过其他方式吸附或抓取微型发光二极管500。\n\n[0076]具体的，相邻吸附头之303间的距离对应于承载基板200上的相邻微型发光二极管500的第一预设距离L1，是指吸附臂3021张开至第一预设角度α时，相邻吸附头之303间的距离使得吸附臂3021连接的吸附头303正好抓取相邻的微型发光二极管500。\n\n[0077]步骤S220：吸附头303抓取的微型发光二极管500对位于对应的焊接端子110，吸附臂3021张开至第二预设角度β，相邻吸附头303之间的距离对应于阵列基板100上的相邻焊接端子110的第二预设距离L2，将吸附头303所抓取的微型发光二极管500与阵列基板100上对应的焊接端子110对位。\n\n[0078]具体的，相邻吸附头303之间的距离对应于阵列基板100上的相邻焊接端子110的第二预设距离L2，是指吸附臂3021张开至第二预设角度β时，相邻吸附头之303间的距离使得吸附头303抓取的相邻微型发光二极管500正好可以与任意的相邻焊接端子110对位。\n\n[0079]步骤S230：吸附头303释放微型发光二极管500，微型发光二极管转移设备300卸除吸附力，吸附头303释放所抓取的微型发光二极管500至阵列基板100，微型发光二极管500与阵列基板100上对应的焊接端子110连接。\n\n[0080]具体的，吸附头303通过静电吸附、磁力吸附、胶水吸附中任一种吸附方式抓取微型发光二极管500，在步骤S230中，可以卸除这些吸附力，或者使得微型发光二极管500与焊接端子110固定连接，微型发光二极管500与焊接端子110的固定连接力大于吸附头303抓取微型发光二极管500的吸附力。\n\n[0081]其中，如图8所示，在步骤S220之前，还可以包括在焊接端子110上还设有锡膏400，锡膏400起到固定连接微型发光二极管500的作用。\n\n[0082]具体的，除锡膏材料之外，还可以设置其他材料代替锡膏400，例如银浆等。\n\n[0083]其中，如图1、图2所示，第一预设角度为α，第一预设距离为L1，吸附臂3021的长度为H，则满足如下公式：\n\n[0084]L1＝2*H*sin(α/2)。\n\n[0085]其中，如图1、图3所示，第二预设角度为β，第二预设距离为L2，则满足如下公式：\n\n[0086]L2＝2*H*sin(β/2)。\n\n[0087]本申请实施例中，提出了一种微型发光二极管转移设备及其转移方法，转移设备具有支架，支架包括至少两个吸附臂，吸附臂的张开角度可以调节，通过可以调节张开角度的吸附臂来抓取承载基板上的微型发光二极管，并转移至阵列基板上，可以极大的提升转移效率，减小资源消耗。\n\n[0088]以上对本申请实施例所提供的一种微型发光二极管转移设备及其转移方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10899, 23953, '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种显示装置及其制备方法。\n\n背景技术\n\n[0002]量子点具有发光波长可调、荧光量子效率高、半峰宽较窄、可溶液加工等特点，因此被广泛应用于光电显示领域。特别地，以三星为首的各大面板厂相继开发了量子点显示电视。\n\n[0003]在LCD或OLED显示装置中，量子点主要应用在导光板、偏光片和彩膜等结构件的性能提升。作为一种新型显示，miniLED因其高稳定性、高亮度和高对比度等优质性能，逐渐被应用于背光或直显。而将量子点和miniLED相结合，则可以发展出QD-miniLED新型高品质显示技术。\n\n[0004]一般而言，QD-miniLED显示技术以蓝光miniLED作为背光，利用高能量的蓝光激发红或绿量子点产生相应的红光或绿光，从而实现色转换。这种显示技术相对红、绿、蓝三色miniLED直显技术而言，只需要蓝色miniLED芯片，再结合量子点色转换层，就可以实现全彩化，因此其工艺和成本会相对较低。\n\n[0005]但是，在QD-miniLED显示的研发中，由于miniLED芯片本身带有衬底，其厚度高达100微米左右，因此当点亮某个子像素的蓝光miniLED时，从芯片底部有源层发出的蓝光会从侧面射出，会激发其相邻子像素的量子点，这样就容易产生光串扰问题。另一方面，若采用黑色阻隔结构，则会完全吸收miniLED的侧面光，造成出光效率较低。同时，普通的QD-miniLED器件会面临水氧信赖性问题，主要是由于miniLED芯片没有特定的水氧保护层或者其封装材料不具有良好的水氧阻隔特性。\n\n发明内容\n\n[0006]本申请的目的在于，提供一种显示装置及其制备方法，可以解决现有显示装置中相邻子像素之间容易发生光串扰、发光效率不高、水氧阻隔特性不佳等技术问题。\n\n[0007]所述显示装置包括驱动背板；若干miniLED灯，设于所述驱动背板一侧的表面；黑色涂层，包覆每一miniLED灯的侧边，且位于任意两个miniLED灯之间的空隙处；量子点基板，与所述驱动背板相对设置，且设于所述miniLED灯远离所述驱动背板一侧的表面。\n\n[0008]进一步地，所述黑色涂层的材质包括：胶材、吸光材料、金属微粒、疏水剂、表面活性剂以及分散剂。\n\n[0009]进一步地，所述胶材在所述黑色涂层中所占的质量分数为20～80％；所述吸光材料在所述黑色涂层中所占的质量分数为2～10％；所述金属微粒在所述黑色涂层中所占的质量分数为0.1～5％；所述疏水剂在所述黑色涂层中所占的质量分数为0.1～3％；所述表面活性剂在所述黑色涂层中所占的质量分数为0.1～2％；所述分散剂在所述黑色涂层中所占的质量分数为10～50％。\n\n[0010]进一步地，所述吸光材料包括中间相碳微球或蜡烛炭黑。\n\n[0011]进一步地，所述金属微粒包括银球，吸附于所述吸光材料的外表面。\n\n[0012]进一步地，所述量子点基板内的发光区与每一miniLED灯相对设置，用于发光。\n\n[0013]所述显示装置的制备方法包括以下步骤：提供一驱动背板；在所述驱动背板的上表面安装若干miniLED灯；在所述miniLED灯的上方放置一掩膜板，其中，所述掩膜板的开口区正对于任意两个miniLED灯之间的空隙处，所述掩膜板的遮蔽区正对于每一miniLED灯；在所述掩膜板的上方进行喷涂处理，将黑胶溶液喷涂至所述miniLED灯的侧壁上；移除所述掩膜板，并固化处理所述黑胶溶液，形成黑色涂层；制备一量子点基板；以及将所述量子点基板贴合至所述驱动背板设有所述miniLED灯的一侧。\n\n[0014]进一步地，在所述掩膜板的上方进行喷涂处理的步骤中，包括：将所述黑胶溶液在超声浴中超声震荡，通过压缩空气雾化处理所述黑胶溶液。\n\n[0015]进一步地，在所述掩膜板的上方进行喷涂处理的步骤中，旋转喷涂的喷嘴或是旋转待喷涂的所述掩膜板与所述miniLED灯，对所述miniLED灯的侧壁进行全方位均匀喷涂。\n\n[0016]进一步地，所述制备一量子点基板步骤包括：在一玻璃基板上，喷墨打印一层量子点墨水，固化处理所述量子点墨水，形成量子点基板。\n\n[0017]本申请的技术效果在于，在若干miniLED灯的侧面以及任意两个miniLED灯之间的间隙内制备出黑色涂层，所述黑色涂层内的吸光材料能吸收部分向侧边发射的蓝光，所述黑色涂层内的金属微粒能反射部分向侧边发射的蓝光，能防止蓝光全部被所述黑色涂层吸收，也能提高光束的出光效率，同时，所述黑色涂层内含有疏水材料，能有效实现防水功能，提高显示装置的水氧阻隔特性，保证显示装置具有较佳的防水、抗光串扰以及高出光率等优势。\n\n附图说明\n\n[0018]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1是本申请实施例提供的显示装置的结构示意图；\n\n[0020]图2是本申请实施例提供的显示装置的制备方法的流程图；\n\n[0021]图3是本申请实施例提供的掩膜板与驱动背板的对位示意图；\n\n[0022]图4是本申请实施例提供的喷涂步骤之后形成黑色涂层的示意图。\n\n[0023]附图标记说明：\n\n[0024]1、驱动背板；2、miniLED灯；3、黑色涂层；4、量子点基板；\n\n[0025]10、光阻；20、掩膜板；\n\n[0026]21、开口区；22、遮蔽区。\n\n具体实施方式\n\n[0027]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0028]本申请实施例提供一种显示装置及其制备方法。以下分别进对其行详细说明。\n\n[0029]如图1所示，本实施例提供一种显示装置，包括：驱动背板1、若干miniLED灯2、黑色涂层3以及量子点基板4。\n\n[0030]由于所述显示装置为显示背光一体化装置，所以所述驱动背板1包括背板以及设于所述背板上的驱动电路，所述驱动电路包括薄膜晶体管(TFT)或是互补金属氧化物半导体(Complementary Metal Oxide Semiconductor，CMOS)等组件，所述驱动背板1作为所述显示装置中电路的主要部件。\n\n[0031]所述若干miniLED灯2设于所述驱动背板1中所述驱动电路远离所述背板的一侧，所述若干miniLED灯2的出光面朝向远离所述驱动电路的一侧，在本实施例中，所述出光面即为所述若干miniLED灯2的上表面。所述若干miniLED灯2为所述显示装置的主要发光元件，所述若干miniLED灯2发出蓝色光束，所述蓝色光束与红绿量子点激发后发光。\n\n[0032]所述黑色涂层3包覆每一miniLED灯2的侧边，且覆盖任意两个所述miniLED灯2之间的间隙。\n\n[0033]所述黑色涂层3的材质为黑胶溶液，所述黑胶溶液的组分包括：胶材、吸光材料、金属微粒、疏水剂、表面活性剂以及分散剂。\n\n[0034]所述胶材在所述黑色涂层中3中所占的质量分数为20～80％，所述胶材包括环氧树脂或是聚甲基丙烯酸甲酯(polymethyl methacrylate，PMMA)等高分子胶，PMMA即为亚克力材料，所述胶材作为所述黑色涂层3所用黑胶溶液的基材。\n\n[0035]所述吸光材料在所述黑色涂层3中所占的质量分数为2～10％，所述吸光材料包括中间相碳微球或蜡烛炭黑。所述miniLED灯2发出的光线入射到灯侧壁上时，能被所述吸光材料所吸收，有效防止相邻像素之间的发生光串扰的问题。\n\n[0036]所述中间相碳微球的直径为100纳米～10微米，沥青类化合物热处理时，会发生热缩聚反应，生成具有各向异性的中间相小球体，把该中间相小球从沥青母体中分离出来形成的微米级球形碳材料即为中间相碳微球(Meso carbon micro beads，MCMB)。\n\n[0037]所述蜡烛炭黑的直径为20～500纳米，所述蜡烛炭黑为蜡烛不完全燃烧后的产物，如果在蜡烛火焰的上方放置一片玻璃，在蜡烛燃烧的过程中，在玻璃上收集到的黑色微颗粒即为蜡烛炭黑或蜡烛黑。\n\n[0038]所述金属微粒在所述黑色涂层3中所占的质量分数为0.1～5％，所述金属微粒的直径为10～500纳米，所述金属颗粒在本实施例中优选为银球。所述金属微球会吸附于所述吸光材料的外表面，所述金属颗粒具有较佳的反射作用，能将所述若干miniLED灯2入射至侧边的蓝光多次反射，使其从所述miniLED灯2的出光面即上表面出射，能防止所有侧边光束被吸收，部分反射的光线能被有效利用，提高所述miniLED灯2的出光效率。\n\n[0039]所述疏水剂在所述黑色涂层3中所占的质量分数为0.1～3％，所述疏水剂主要为氟化剂，包括全氟辛基三氯硅烷等，所述黑色涂层3的表面具有含氟基团，具有良好的疏水效果，使得所述黑色涂层3具有防水效果。\n\n[0040]所述表面活性剂在所述黑色涂层3中所占的质量分数为0.1～2％，所述表面活性剂包括十二烷基磺酸钠等，所述十二烷基磺酸钠属于阴离子表面活性剂，具有优异的渗透、洗涤、润湿、去污和乳化作用。\n\n[0041]所述分散剂在所述黑色涂层3中所占的质量分数为10～50％，所述分散剂包括氯仿等，氯仿即为三氯甲烷CHCl3。\n\n[0042]所述黑色涂层3具有良好的吸光以及光反射的效果，因为所述黑色涂层3并未覆盖于所述miniLED灯2的出光面，且所述若干miniLED灯2的侧面被所述黑色涂层3所覆盖，所以所述若干miniLED灯2中的光束大部分从所述出光面向上出射，有一部分的光束从侧边出射后会被所述黑色涂层3中的吸光材料所吸收，起到遮光效果，另一部分光束会被所述黑色涂层3中的金属颗粒所反射，未被吸收，后经多次反射后，从所述出光面出射，可降低蓝光的损失，进一步提高光束的出光效率。\n\n[0043]所述量子点基板4与所述驱动背板1相对设置，且设于所述miniLED灯2远离所述驱动背板1的一侧，即位于所述miniLED灯2的上方。所述量子点基板4内设有多个发光区，每一发光区与每一miniLED灯2相对设置，用于发光。其中，所述多个发光区包括量子点发光区和非量子点发光区，所述量子点发光区内为红绿量子点，其下方的miniLED灯2发出的蓝光与所述红绿量子点激发后发出红光与绿光，所述非量子点发光区内没有量子点，蓝光可直接通过，发出蓝光，完成所述显示装置的发光。\n\n[0044]本实施例所述显示装置的技术效果在于，在若干miniLED灯2的侧面以及任意两个miniLED灯2之间的间隙内设置黑色涂层3，所述黑色涂层3内的吸光材料能吸收部分向侧边发射的蓝光，所述黑色涂层3内的金属微粒能反射部分向侧边发射的蓝光，能防止蓝光全部被所述黑色涂层3吸收，也能提高光束的出光效率，同时，所述黑色涂层3内含有疏水材料，能有效实现防水功能，保证显示装置具有较佳的防水、抗光串扰以及高出光率等优势。\n\n[0045]如图2至图4所示，本实施例还提供一种显示装置的制备方法，包括步骤S1～S7。\n\n[0046]S1提供一驱动背板1，所述驱动背板1包括背板以及设于所述背板上的驱动电路，所述驱动电路包括薄膜晶体管(TFT)或是互补金属氧化物半导体(Complementary MetalOxide Semiconductor，CMOS)等组件。\n\n[0047]S2利用传统的打件工艺，在所述驱动背板1的上表面安装若干miniLED灯2，将miniLED灯逐颗转移到所述驱动背板1上，以得到载有若干miniLED灯2的驱动背板1，具体地，所述若干miniLED灯2安装至所述驱动背板1中所述驱动电路远离所述背板的一侧，使得所述若干miniLED灯2的出光面朝向远离所述驱动电路的一侧，在本实施例中，所述出光面即为所述若干miniLED灯2的上表面。所述若干miniLED灯2为所述显示装置的主要发光元件，所述若干miniLED灯2发出蓝色光束，所述蓝色光束与红绿量子点激发后发光。\n\n[0048]S3掩膜板20对位处理，具体地，在若干所述miniLED灯2的上表面涂覆一层光阻10，再在所述光层10的上方放置一掩膜板20(参见图3)，使得所述掩膜板20与所述驱动背板1对位，其中，所述掩膜板20的开口区21正对于任意两个miniLED灯2之间的空隙处，所述开口区21用作后续涂布窗口，所述掩膜板20的遮蔽区22正对于每一miniLED灯2，用以遮蔽每一miniLED灯2的出光面，防止后续遮光材料喷涂到所述miniLED灯2的出光面处进而影响所述miniLED灯2的出光。\n\n[0049]S4在所述掩膜板20的上方进行喷涂处理，将黑胶溶液喷涂至所述miniLED灯2的侧壁以及任意两个miniLED灯2之间的空隙处。具体地，所述黑胶溶液的组分包括：胶材、吸光材料、金属微粒、疏水剂、表面活性剂以及分散剂。\n\n[0050]在喷涂之前也可进行喷涂调试处理，先将所述黑胶溶液放置于超声浴中，对其进行超声震荡2～5min，再通过压缩空气使其雾化，最后对上述驱动背板1进行喷涂。\n\n[0051]在调试过程中，可根据所述黑胶溶液的实际粘度来调节压缩空气压力，尽量保持较低压力，以防气流对待喷涂基板造成冲击或损坏。在喷涂时，喷嘴与待喷涂驱动背板之间保持适当的距离，使得所述黑胶溶液能够大面积均匀地喷于所述驱动背板上。同时，在喷涂过程中，可适当旋转所述驱动背板或调整喷头的角度，使其对所述驱动背板能进行多角度、全方位地喷涂，从而使得所述驱动背板上的miniLED灯的侧壁被所述黑胶溶液均匀涂布。\n\n[0052]所述胶材在所述黑胶溶液中所占的质量分数为20～80％，所述胶材包括环氧树脂或是聚甲基丙烯酸甲酯(polymethyl methacrylate，PMMA)等高分子胶，PMMA即为亚克力材料，所述胶材作为所述黑胶溶液的基材。\n\n[0053]所述吸光材料在所述黑胶溶液中所占的质量分数为2～10％，所述吸光材料包括中间相碳微球或蜡烛炭黑。所述miniLED灯2发出的光线入射到灯侧壁上时，能被所述吸光材料所吸收，有效防止相邻像素之间的发生光串扰的问题。\n\n[0054]所述中间相碳微球的直径为100纳米～10微米，沥青类化合物热处理时，会发生热缩聚反应，生成具有各向异性的中间相小球体，把该中间相小球从沥青母体中分离出来形成的微米级球形碳材料即为中间相碳微球(Meso carbon micro beads，MCMB)。\n\n[0055]所述蜡烛炭黑的直径为20～500纳米，所述蜡烛炭黑为蜡烛不完全燃烧后的产物，如果在蜡烛火焰的上方放置一片玻璃，在蜡烛燃烧的过程中，在玻璃上收集到的黑色微颗粒即为蜡烛炭黑或蜡烛黑。\n\n[0056]所述金属微粒在黑胶溶液中所占的质量分数为0.1～5％，所述金属微粒的直径为10～500纳米，所述金属颗粒在本实施例中优选为银球。所述金属微球会吸附于所述吸光材料的外表面，所述金属颗粒具有较佳的反射作用，能将所述若干miniLED灯2入射至侧边的蓝光多次反射，使其从所述miniLED灯2的出光面即上表面出射，能防止所有侧边光束被吸收，部分反射的光线能被有效利用，提高所述miniLED灯2的出光效率。\n\n[0057]所述疏水剂在所述黑胶溶液中所占的质量分数为0.1～3％，所述疏水剂主要为氟化剂，包括全氟辛基三氯硅烷等，所述黑胶溶液的表面具有含氟基团，具有良好的疏水效果，使得制备所得的黑色涂层3具有防水效果。\n\n[0058]所述表面活性剂在所述黑胶溶液中所占的质量分数为0.1～2％，所述表面活性剂包括十二烷基磺酸钠等，所述十二烷基磺酸钠属于阴离子表面活性剂，具有优异的渗透、洗涤、润湿、去污和乳化作用。\n\n[0059]所述分散剂在所述黑胶溶液中所占的质量分数为10～50％，所述分散剂包括氯仿等，氯仿即为三氯甲烷CHCl3。\n\n[0060]S5喷涂完成后，移除所述掩模板20，剥除光阻10，利用加热或紫外光UV方式对所述黑胶溶液进行固化处理，形成黑色涂层3(参见图4)，进而得到侧壁带有黑色涂层3的miniLED基板。\n\n[0061]所述黑色涂层3具有良好的吸光以及光反射的效果，因为所述黑色涂层3并未覆盖于所述miniLED灯2的出光面，且所述若干miniLED灯2的侧面被所述黑色涂层3所覆盖，所以所述若干miniLED灯2中的光束大部分从所述出光面向上出射，有一部分的光束从侧边出射后会被所述黑色涂层3中的吸光材料所吸收，起到遮光效果，另一部分光束会被所述黑色涂层3中的金属颗粒所反射，未被吸收，后经多次反射后，从所述出光面出射，可降低蓝光的损失，进一步提高光束的出光效率。\n\n[0062]S6制备一量子点基板4，采用喷墨打印工艺在一玻璃基板上打印量子点墨水，再在小于50℃的温度环境下进行热固化处理，热固化过程不超过10分钟，或是采用波长为365nm的紫外光UV进行光固化处理，光固化过程为2～5分钟，形成量子点色转层，获得量子点基板4，该量子点色转换层的厚度为5～20微米，所述量子点色转换层上设有多个发光区，其中，所述多个发光区包括量子点发光区和非量子点发光区，所述量子点发光区内为红绿量子点，所述非量子点发光区内没有量子点，光线可直接通过。\n\n[0063]S7将所述量子点基板4贴合至所述驱动背板1设有所述miniLED灯2的一侧，使得所述量子点基板4与所述驱动背板1相对设置，且位于所述miniLED灯2的上方。所述量子点基板4内的每一发光区与每一miniLED灯2相对设置，其中，所述量子点发光区下方的miniLED灯2发出的蓝光与所述红绿量子点激发后发出红光与绿光，所述非量子点发光区中蓝光可直接通过，发出蓝光，完成所述显示装置的发光。\n\n[0064]本实施例所述显示装置的制备方法的技术效果在于，在若干miniLED灯2的侧面以及任意两个miniLED灯2之间的间隙内喷涂黑色溶液，制备出黑色涂层3，所述黑色涂层3内的吸光材料能吸收部分向侧边发射的蓝光，所述黑色涂层3内的金属微粒能反射部分向侧边发射的蓝光，能防止蓝光全部被所述黑色涂层3吸收，也能提高光束的出光效率，同时，所述黑色涂层3内含有疏水材料，能有效实现防水功能，保证显示装置具有较佳的防水、抗光串扰以及高出光率等优势。\n\n[0065]以上对本申请实施例所提供的一种显示装置及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种显示装置及其制备方法。\n\n背景技术\n\n[0002]量子点具有发光波长可调、荧光量子效率高、半峰宽较窄、可溶液加工等特点，因此被广泛应用于光电显示领域。特别地，以三星为首的各大面板厂相继开发了量子点显示电视。\n\n[0003]在LCD或OLED显示装置中，量子点主要应用在导光板、偏光片和彩膜等结构件的性能提升。作为一种新型显示，miniLED因其高稳定性、高亮度和高对比度等优质性能，逐渐被应用于背光或直显。而将量子点和miniLED相结合，则可以发展出QD-miniLED新型高品质显示技术。\n\n[0004]一般而言，QD-miniLED显示技术以蓝光miniLED作为背光，利用高能量的蓝光激发红或绿量子点产生相应的红光或绿光，从而实现色转换。这种显示技术相对红、绿、蓝三色miniLED直显技术而言，只需要蓝色miniLED芯片，再结合量子点色转换层，就可以实现全彩化，因此其工艺和成本会相对较低。\n\n[0005]但是，在QD-miniLED显示的研发中，由于miniLED芯片本身带有衬底，其厚度高达100微米左右，因此当点亮某个子像素的蓝光miniLED时，从芯片底部有源层发出的蓝光会从侧面射出，会激发其相邻子像素的量子点，这样就容易产生光串扰问题。另一方面，若采用黑色阻隔结构，则会完全吸收miniLED的侧面光，造成出光效率较低。同时，普通的QD-miniLED器件会面临水氧信赖性问题，主要是由于miniLED芯片没有特定的水氧保护层或者其封装材料不具有良好的水氧阻隔特性。\n\n发明内容\n\n[0006]本申请的目的在于，提供一种显示装置及其制备方法，可以解决现有显示装置中相邻子像素之间容易发生光串扰、发光效率不高、水氧阻隔特性不佳等技术问题。\n\n[0007]所述显示装置包括驱动背板；若干miniLED灯，设于所述驱动背板一侧的表面；黑色涂层，包覆每一miniLED灯的侧边，且位于任意两个miniLED灯之间的空隙处；量子点基板，与所述驱动背板相对设置，且设于所述miniLED灯远离所述驱动背板一侧的表面。\n\n[0008]进一步地，所述黑色涂层的材质包括：胶材、吸光材料、金属微粒、疏水剂、表面活性剂以及分散剂。\n\n[0009]进一步地，所述胶材在所述黑色涂层中所占的质量分数为20～80％；所述吸光材料在所述黑色涂层中所占的质量分数为2～10％；所述金属微粒在所述黑色涂层中所占的质量分数为0.1～5％；所述疏水剂在所述黑色涂层中所占的质量分数为0.1～3％；所述表面活性剂在所述黑色涂层中所占的质量分数为0.1～2％；所述分散剂在所述黑色涂层中所占的质量分数为10～50％。\n\n[0010]进一步地，所述吸光材料包括中间相碳微球或蜡烛炭黑。\n\n[0011]进一步地，所述金属微粒包括银球，吸附于所述吸光材料的外表面。\n\n[0012]进一步地，所述量子点基板内的发光区与每一miniLED灯相对设置，用于发光。\n\n[0013]所述显示装置的制备方法包括以下步骤：提供一驱动背板；在所述驱动背板的上表面安装若干miniLED灯；在所述miniLED灯的上方放置一掩膜板，其中，所述掩膜板的开口区正对于任意两个miniLED灯之间的空隙处，所述掩膜板的遮蔽区正对于每一miniLED灯；在所述掩膜板的上方进行喷涂处理，将黑胶溶液喷涂至所述miniLED灯的侧壁上；移除所述掩膜板，并固化处理所述黑胶溶液，形成黑色涂层；制备一量子点基板；以及将所述量子点基板贴合至所述驱动背板设有所述miniLED灯的一侧。\n\n[0014]进一步地，在所述掩膜板的上方进行喷涂处理的步骤中，包括：将所述黑胶溶液在超声浴中超声震荡，通过压缩空气雾化处理所述黑胶溶液。\n\n[0015]进一步地，在所述掩膜板的上方进行喷涂处理的步骤中，旋转喷涂的喷嘴或是旋转待喷涂的所述掩膜板与所述miniLED灯，对所述miniLED灯的侧壁进行全方位均匀喷涂。\n\n[0016]进一步地，所述制备一量子点基板步骤包括：在一玻璃基板上，喷墨打印一层量子点墨水，固化处理所述量子点墨水，形成量子点基板。\n\n[0017]本申请的技术效果在于，在若干miniLED灯的侧面以及任意两个miniLED灯之间的间隙内制备出黑色涂层，所述黑色涂层内的吸光材料能吸收部分向侧边发射的蓝光，所述黑色涂层内的金属微粒能反射部分向侧边发射的蓝光，能防止蓝光全部被所述黑色涂层吸收，也能提高光束的出光效率，同时，所述黑色涂层内含有疏水材料，能有效实现防水功能，提高显示装置的水氧阻隔特性，保证显示装置具有较佳的防水、抗光串扰以及高出光率等优势。\n\n附图说明\n\n[0018]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1是本申请实施例提供的显示装置的结构示意图；\n\n[0020]图2是本申请实施例提供的显示装置的制备方法的流程图；\n\n[0021]图3是本申请实施例提供的掩膜板与驱动背板的对位示意图；\n\n[0022]图4是本申请实施例提供的喷涂步骤之后形成黑色涂层的示意图。\n\n[0023]附图标记说明：\n\n[0024]1、驱动背板；2、miniLED灯；3、黑色涂层；4、量子点基板；\n\n[0025]10、光阻；20、掩膜板；\n\n[0026]21、开口区；22、遮蔽区。\n\n具体实施方式\n\n[0027]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0028]本申请实施例提供一种显示装置及其制备方法。以下分别进对其行详细说明。\n\n[0029]如图1所示，本实施例提供一种显示装置，包括：驱动背板1、若干miniLED灯2、黑色涂层3以及量子点基板4。\n\n[0030]由于所述显示装置为显示背光一体化装置，所以所述驱动背板1包括背板以及设于所述背板上的驱动电路，所述驱动电路包括薄膜晶体管(TFT)或是互补金属氧化物半导体(Complementary Metal Oxide Semiconductor，CMOS)等组件，所述驱动背板1作为所述显示装置中电路的主要部件。\n\n[0031]所述若干miniLED灯2设于所述驱动背板1中所述驱动电路远离所述背板的一侧，所述若干miniLED灯2的出光面朝向远离所述驱动电路的一侧，在本实施例中，所述出光面即为所述若干miniLED灯2的上表面。所述若干miniLED灯2为所述显示装置的主要发光元件，所述若干miniLED灯2发出蓝色光束，所述蓝色光束与红绿量子点激发后发光。\n\n[0032]所述黑色涂层3包覆每一miniLED灯2的侧边，且覆盖任意两个所述miniLED灯2之间的间隙。\n\n[0033]所述黑色涂层3的材质为黑胶溶液，所述黑胶溶液的组分包括：胶材、吸光材料、金属微粒、疏水剂、表面活性剂以及分散剂。\n\n[0034]所述胶材在所述黑色涂层中3中所占的质量分数为20～80％，所述胶材包括环氧树脂或是聚甲基丙烯酸甲酯(polymethyl methacrylate，PMMA)等高分子胶，PMMA即为亚克力材料，所述胶材作为所述黑色涂层3所用黑胶溶液的基材。\n\n[0035]所述吸光材料在所述黑色涂层3中所占的质量分数为2～10％，所述吸光材料包括中间相碳微球或蜡烛炭黑。所述miniLED灯2发出的光线入射到灯侧壁上时，能被所述吸光材料所吸收，有效防止相邻像素之间的发生光串扰的问题。\n\n[0036]所述中间相碳微球的直径为100纳米～10微米，沥青类化合物热处理时，会发生热缩聚反应，生成具有各向异性的中间相小球体，把该中间相小球从沥青母体中分离出来形成的微米级球形碳材料即为中间相碳微球(Meso carbon micro beads，MCMB)。\n\n[0037]所述蜡烛炭黑的直径为20～500纳米，所述蜡烛炭黑为蜡烛不完全燃烧后的产物，如果在蜡烛火焰的上方放置一片玻璃，在蜡烛燃烧的过程中，在玻璃上收集到的黑色微颗粒即为蜡烛炭黑或蜡烛黑。\n\n[0038]所述金属微粒在所述黑色涂层3中所占的质量分数为0.1～5％，所述金属微粒的直径为10～500纳米，所述金属颗粒在本实施例中优选为银球。所述金属微球会吸附于所述吸光材料的外表面，所述金属颗粒具有较佳的反射作用，能将所述若干miniLED灯2入射至侧边的蓝光多次反射，使其从所述miniLED灯2的出光面即上表面出射，能防止所有侧边光束被吸收，部分反射的光线能被有效利用，提高所述miniLED灯2的出光效率。\n\n[0039]所述疏水剂在所述黑色涂层3中所占的质量分数为0.1～3％，所述疏水剂主要为氟化剂，包括全氟辛基三氯硅烷等，所述黑色涂层3的表面具有含氟基团，具有良好的疏水效果，使得所述黑色涂层3具有防水效果。\n\n[0040]所述表面活性剂在所述黑色涂层3中所占的质量分数为0.1～2％，所述表面活性剂包括十二烷基磺酸钠等，所述十二烷基磺酸钠属于阴离子表面活性剂，具有优异的渗透、洗涤、润湿、去污和乳化作用。\n\n[0041]所述分散剂在所述黑色涂层3中所占的质量分数为10～50％，所述分散剂包括氯仿等，氯仿即为三氯甲烷CHCl3。\n\n[0042]所述黑色涂层3具有良好的吸光以及光反射的效果，因为所述黑色涂层3并未覆盖于所述miniLED灯2的出光面，且所述若干miniLED灯2的侧面被所述黑色涂层3所覆盖，所以所述若干miniLED灯2中的光束大部分从所述出光面向上出射，有一部分的光束从侧边出射后会被所述黑色涂层3中的吸光材料所吸收，起到遮光效果，另一部分光束会被所述黑色涂层3中的金属颗粒所反射，未被吸收，后经多次反射后，从所述出光面出射，可降低蓝光的损失，进一步提高光束的出光效率。\n\n[0043]所述量子点基板4与所述驱动背板1相对设置，且设于所述miniLED灯2远离所述驱动背板1的一侧，即位于所述miniLED灯2的上方。所述量子点基板4内设有多个发光区，每一发光区与每一miniLED灯2相对设置，用于发光。其中，所述多个发光区包括量子点发光区和非量子点发光区，所述量子点发光区内为红绿量子点，其下方的miniLED灯2发出的蓝光与所述红绿量子点激发后发出红光与绿光，所述非量子点发光区内没有量子点，蓝光可直接通过，发出蓝光，完成所述显示装置的发光。\n\n[0044]本实施例所述显示装置的技术效果在于，在若干miniLED灯2的侧面以及任意两个miniLED灯2之间的间隙内设置黑色涂层3，所述黑色涂层3内的吸光材料能吸收部分向侧边发射的蓝光，所述黑色涂层3内的金属微粒能反射部分向侧边发射的蓝光，能防止蓝光全部被所述黑色涂层3吸收，也能提高光束的出光效率，同时，所述黑色涂层3内含有疏水材料，能有效实现防水功能，保证显示装置具有较佳的防水、抗光串扰以及高出光率等优势。\n\n[0045]如图2至图4所示，本实施例还提供一种显示装置的制备方法，包括步骤S1～S7。\n\n[0046]S1提供一驱动背板1，所述驱动背板1包括背板以及设于所述背板上的驱动电路，所述驱动电路包括薄膜晶体管(TFT)或是互补金属氧化物半导体(Complementary MetalOxide Semiconductor，CMOS)等组件。\n\n[0047]S2利用传统的打件工艺，在所述驱动背板1的上表面安装若干miniLED灯2，将miniLED灯逐颗转移到所述驱动背板1上，以得到载有若干miniLED灯2的驱动背板1，具体地，所述若干miniLED灯2安装至所述驱动背板1中所述驱动电路远离所述背板的一侧，使得所述若干miniLED灯2的出光面朝向远离所述驱动电路的一侧，在本实施例中，所述出光面即为所述若干miniLED灯2的上表面。所述若干miniLED灯2为所述显示装置的主要发光元件，所述若干miniLED灯2发出蓝色光束，所述蓝色光束与红绿量子点激发后发光。\n\n[0048]S3掩膜板20对位处理，具体地，在若干所述miniLED灯2的上表面涂覆一层光阻10，再在所述光层10的上方放置一掩膜板20(参见图3)，使得所述掩膜板20与所述驱动背板1对位，其中，所述掩膜板20的开口区21正对于任意两个miniLED灯2之间的空隙处，所述开口区21用作后续涂布窗口，所述掩膜板20的遮蔽区22正对于每一miniLED灯2，用以遮蔽每一miniLED灯2的出光面，防止后续遮光材料喷涂到所述miniLED灯2的出光面处进而影响所述miniLED灯2的出光。\n\n[0049]S4在所述掩膜板20的上方进行喷涂处理，将黑胶溶液喷涂至所述miniLED灯2的侧壁以及任意两个miniLED灯2之间的空隙处。具体地，所述黑胶溶液的组分包括：胶材、吸光材料、金属微粒、疏水剂、表面活性剂以及分散剂。\n\n[0050]在喷涂之前也可进行喷涂调试处理，先将所述黑胶溶液放置于超声浴中，对其进行超声震荡2～5min，再通过压缩空气使其雾化，最后对上述驱动背板1进行喷涂。\n\n[0051]在调试过程中，可根据所述黑胶溶液的实际粘度来调节压缩空气压力，尽量保持较低压力，以防气流对待喷涂基板造成冲击或损坏。在喷涂时，喷嘴与待喷涂驱动背板之间保持适当的距离，使得所述黑胶溶液能够大面积均匀地喷于所述驱动背板上。同时，在喷涂过程中，可适当旋转所述驱动背板或调整喷头的角度，使其对所述驱动背板能进行多角度、全方位地喷涂，从而使得所述驱动背板上的miniLED灯的侧壁被所述黑胶溶液均匀涂布。\n\n[0052]所述胶材在所述黑胶溶液中所占的质量分数为20～80％，所述胶材包括环氧树脂或是聚甲基丙烯酸甲酯(polymethyl methacrylate，PMMA)等高分子胶，PMMA即为亚克力材料，所述胶材作为所述黑胶溶液的基材。\n\n[0053]所述吸光材料在所述黑胶溶液中所占的质量分数为2～10％，所述吸光材料包括中间相碳微球或蜡烛炭黑。所述miniLED灯2发出的光线入射到灯侧壁上时，能被所述吸光材料所吸收，有效防止相邻像素之间的发生光串扰的问题。\n\n[0054]所述中间相碳微球的直径为100纳米～10微米，沥青类化合物热处理时，会发生热缩聚反应，生成具有各向异性的中间相小球体，把该中间相小球从沥青母体中分离出来形成的微米级球形碳材料即为中间相碳微球(Meso carbon micro beads，MCMB)。\n\n[0055]所述蜡烛炭黑的直径为20～500纳米，所述蜡烛炭黑为蜡烛不完全燃烧后的产物，如果在蜡烛火焰的上方放置一片玻璃，在蜡烛燃烧的过程中，在玻璃上收集到的黑色微颗粒即为蜡烛炭黑或蜡烛黑。\n\n[0056]所述金属微粒在黑胶溶液中所占的质量分数为0.1～5％，所述金属微粒的直径为10～500纳米，所述金属颗粒在本实施例中优选为银球。所述金属微球会吸附于所述吸光材料的外表面，所述金属颗粒具有较佳的反射作用，能将所述若干miniLED灯2入射至侧边的蓝光多次反射，使其从所述miniLED灯2的出光面即上表面出射，能防止所有侧边光束被吸收，部分反射的光线能被有效利用，提高所述miniLED灯2的出光效率。\n\n[0057]所述疏水剂在所述黑胶溶液中所占的质量分数为0.1～3％，所述疏水剂主要为氟化剂，包括全氟辛基三氯硅烷等，所述黑胶溶液的表面具有含氟基团，具有良好的疏水效果，使得制备所得的黑色涂层3具有防水效果。\n\n[0058]所述表面活性剂在所述黑胶溶液中所占的质量分数为0.1～2％，所述表面活性剂包括十二烷基磺酸钠等，所述十二烷基磺酸钠属于阴离子表面活性剂，具有优异的渗透、洗涤、润湿、去污和乳化作用。\n\n[0059]所述分散剂在所述黑胶溶液中所占的质量分数为10～50％，所述分散剂包括氯仿等，氯仿即为三氯甲烷CHCl3。\n\n[0060]S5喷涂完成后，移除所述掩模板20，剥除光阻10，利用加热或紫外光UV方式对所述黑胶溶液进行固化处理，形成黑色涂层3(参见图4)，进而得到侧壁带有黑色涂层3的miniLED基板。\n\n[0061]所述黑色涂层3具有良好的吸光以及光反射的效果，因为所述黑色涂层3并未覆盖于所述miniLED灯2的出光面，且所述若干miniLED灯2的侧面被所述黑色涂层3所覆盖，所以所述若干miniLED灯2中的光束大部分从所述出光面向上出射，有一部分的光束从侧边出射后会被所述黑色涂层3中的吸光材料所吸收，起到遮光效果，另一部分光束会被所述黑色涂层3中的金属颗粒所反射，未被吸收，后经多次反射后，从所述出光面出射，可降低蓝光的损失，进一步提高光束的出光效率。\n\n[0062]S6制备一量子点基板4，采用喷墨打印工艺在一玻璃基板上打印量子点墨水，再在小于50℃的温度环境下进行热固化处理，热固化过程不超过10分钟，或是采用波长为365nm的紫外光UV进行光固化处理，光固化过程为2～5分钟，形成量子点色转层，获得量子点基板4，该量子点色转换层的厚度为5～20微米，所述量子点色转换层上设有多个发光区，其中，所述多个发光区包括量子点发光区和非量子点发光区，所述量子点发光区内为红绿量子点，所述非量子点发光区内没有量子点，光线可直接通过。\n\n[0063]S7将所述量子点基板4贴合至所述驱动背板1设有所述miniLED灯2的一侧，使得所述量子点基板4与所述驱动背板1相对设置，且位于所述miniLED灯2的上方。所述量子点基板4内的每一发光区与每一miniLED灯2相对设置，其中，所述量子点发光区下方的miniLED灯2发出的蓝光与所述红绿量子点激发后发出红光与绿光，所述非量子点发光区中蓝光可直接通过，发出蓝光，完成所述显示装置的发光。\n\n[0064]本实施例所述显示装置的制备方法的技术效果在于，在若干miniLED灯2的侧面以及任意两个miniLED灯2之间的间隙内喷涂黑色溶液，制备出黑色涂层3，所述黑色涂层3内的吸光材料能吸收部分向侧边发射的蓝光，所述黑色涂层3内的金属微粒能反射部分向侧边发射的蓝光，能防止蓝光全部被所述黑色涂层3吸收，也能提高光束的出光效率，同时，所述黑色涂层3内含有疏水材料，能有效实现防水功能，保证显示装置具有较佳的防水、抗光串扰以及高出光率等优势。\n\n[0065]以上对本申请实施例所提供的一种显示装置及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10900, 23954, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示面板。\n\n背景技术\n\n[0002]发光二极管(LED)显示面板的应用越来越广泛，不仅包括传统的户外显示场景，也开始应用于室内公共场所，潜在应用还包含穿戴式装置、手机、电视、车载面板、头戴式显示器、显示面板等。在性能上，与液晶显示装置(LCD)或有机发光二极管(OLED)比较，微发光二极管(Micro LED)几乎无懈可击，未来很有可能成为显示的主流。\n\n[0003]目前需要解决的是微发光二极管量产时的巨量转移技术难题和成本问题，巨量转移制程的良率需要达到4σ以上，才有机会达到产品的商品化。现有技术已有的转移技术主要有静电吸附、范德华力、激光烧灼、流体装配等，但以上转移技术要么良率不高，要么成本较大，这成为制约微发光二极管进一步发展的关键因素。\n\n[0004]因此，现有技术存在缺陷，急需改进。\n\n发明内容\n\n[0005]本发明目的为提供一种既能控制成本，又能保证良率的显示面板。\n\n[0006]为实现上述目的，本发明提供一种显示面板，其特征在于，包括：\n\n[0007]背板，所述背板的一侧表面设有多个接收位置，所述背板的膜层中对应每个所述接收位置下方形成有电磁线圈；\n\n[0008]发光元件，所述发光元件具有出光面和远离所述出光面的安装面，所述安装面形成有一层磁性材料层；\n\n[0009]所述接收位置的电磁线圈通电后将所述发光元件吸附安装于所述接收位置。\n\n[0010]特别的，所述接收位置下方的所述膜层包括多个金属层以及相邻所述金属层之间的绝缘层，所述绝缘层上设有过孔，所述金属层经图案化并通过所述过孔连接形成所述电磁线圈。\n\n[0011]特别的，所述金属层包括遮光层、栅极层和金属线层。\n\n[0012]特别的，所述发光元件包括第一发光元件、第二发光元件和第三发光元件，所述接收位置包括安装所述第一发光元件的第一接收位置，安装所述第二发光元件的第二接收位置和安装所述第三发光元件的第三接收位置，多个所述第一接收位置的电磁线圈形成第一电路、多个所述第二接收位置的电磁线圈形成第二电路，多个所述第三接收位置的电磁线圈形成第三电路，所述第一电路、所述第二电路和所述第三电路相互独立。\n\n[0013]特别的，所述磁性材料层通过嵌入或黏附的方式形成于所述安装面。\n\n[0014]特别的，每个所述发光元件的磁性材料层包括一个或多个磁性区域。\n\n[0015]特别的，每个所述发光元件的磁性材料层包括两个极性相反的磁性区域。\n\n[0016]特别的，每个所述接收位置设有两个电磁线圈，所述电磁线圈垂直设置于所述背板中，两个所述电磁线圈的螺旋方向相反或通电方向相反。\n\n[0017]特别的，所述接收位置的所述电磁线圈平行设置于所述背板中，所述电磁线圈的两端分别与所述两个极性相反的磁性区域重合。\n\n[0018]特别的，所述发光元件为微发光二极管。\n\n[0019]本发明的有益效果：通过控制电磁线圈的电源通断可以实现对发光元件吸附安装，能够高效率地完成发光元件的巨量转移，降低制造成本同时提高产品良率。\n\n附图说明\n\n[0020]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0021]图1为本发明实施例一提供的显示面板的结构示意图。\n\n[0022]图2为本发明实施例一提供的显示面板的背板与发光元件对接位置的结构示意图。\n\n[0023]图3-5为本发明实施例一提供的显示面板的发光元件定位安装示意图。\n\n[0024]图6为本发明实施例二提供的显示面板的背板与发光元件对接位置的结构示意图。\n\n[0025]图7为本发明实施例三提供的显示面板的背板与发光元件对接位置的结构示意图。\n\n具体实施方式\n\n[0026]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0027]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0028]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0029]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0030]下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0031]下面结合附图，对具体实施例进行详细说明。\n\n[0032]如图1所示，本发明实施例1提供了一种显示面板，所述显示面板包括背板1和若干个发光元件2，所述背板1包括层叠设置的膜层，所述膜层包括依次层叠设置的基底层11、遮光层12、第一绝缘层13、半导体层14、栅极绝缘层15、栅极层16、第二绝缘层17、源漏层18、第三绝缘层19；在所述背板1的上表面形成有多个用于接收安装发光元件的接收位置100，所述接收位置100下方的膜层中包括多个金属层，金属层之间设有绝缘层，例如遮光层12、栅极层16和源漏层18为金属层，其中遮光层12与栅极层16之间设有第一绝缘层13，栅极层16与源漏层18之间设有第二绝缘层17，第一绝缘层13在每个接收位置100设有过孔31，第二绝缘层17在每个接收位置100设有过孔32，这样可以通过对所述接收位置的各金属层进行图案化处理，然后不同的金属层之间通过过孔连接，形成螺旋线圈结构，螺旋线圈的两端分别接通电源的正负极，制得可以通过电源控制的电磁线圈10，所述电磁线圈10垂直设置在所述背板1的接收位置100下方的膜层中。\n\n[0033]发光元件2是微发光二极管(Micro LED)，包括出光面21和远离出光面的安装面22，在所述安装面22上通过嵌入、黏附、膜层制备等方式制作一层磁性材料层20，所述磁性材料层由磁特性材料制成，所述磁特性材料可以带磁或被磁化，例如Fe3O4、NiFe2O4、BiFeO3、CoFe2O4等材料。\n\n[0034]如图2所示，所述背板1的接收位置100的下方膜层中形成有电磁线圈10，其中电磁线圈10以垂直于所述背板的方向设置，在对电磁线圈10通电后，所述电磁线圈10靠近背板1上表面的一端形成一个磁极，所述磁极与所述发光单元2上的磁性材料层20远离安装面22一侧的磁极相反，通过二者之间异性磁极间的磁吸力作用将发光元件20定位吸附至所述接收位置100上，每个接收位置100吸附安装一个所述发光元件2，完成发光元件的磁控巨量转移。\n\n[0035]由于电磁线圈都通过对背板的膜层结构中的金属层制作得到的，其制造过程可以结合到背板的工艺制程当中，因而无需增加额外的工艺制程，有效的控制了量产成本，同时，通过电磁吸附能够实现高效率的发光元件，特别是微发光二极管芯片的巨量转移，通过通断电就能够实现精准的定位与安装，能够有效提高产品的良率。\n\n[0036]如图3-5所示，本发明实施例还公开了相应的磁控巨量转移的方法。本实施例中，所述发光元件2包括第一发光元件2A、第二发光元件2B和第三发光元件2C，所述第一发光元件2A、第二发光元件2B和第三发光元件2C分别发出红色(R)、绿色(G)和蓝色(B)三种颜色，所述接收位置100相应的设置为包括安装所述第一发光元件2A的第一接收位置100A，安装所述第二发光元件2B的第二接收位置100B和安装所述第三发光元件2C的第三接收位置100C。\n\n[0037]本发明实施例中将多个所述第一接收位置100A下方的电磁线圈串联起来并与电源接通，形成一个单独的第一电路，多个所述第二接收位置100B的电磁线圈形成第二电路，多个所述第三接收位置100C的电磁线圈形成第三电路，所述第一电路、所述第二电路和所述第三电路相互独立。这样可以通过分别控制所述第一电路、所述第二电路和所述第三电路的通断电，来实现指定发光元件的巨量转移。\n\n[0038]如图3所示，将背板1浸入绝缘液体中的支撑柱4上，通过调节支撑柱4的高度使所述背板1位于靠近液面的位置，若干个单色发光元件，例如红色的第一发光元件2A的安装面朝下均匀悬浮在绝缘液体表面，所述绝缘液体可以是纯水。将所述背板1的多个第一接收位置100A下方的电磁线圈连接的第一电路与电源5接通通电，同时将所述第二电路和所述第三电路断电，从而将每个第一发光元件2A分别吸附到一个第一接收位置100A，然后进行干燥和预固定，完成红色发光元件的巨量转移。\n\n[0039]如图4-5所示，再分别完成绿色的第二发光元件2B和蓝色的第三发光元件2C的定位和预固定，进行后续回流焊和封装工艺完成制作。\n\n[0040]由于不同颜色的发光元件对应接收位置的电磁线圈分别在不同的腔室加电，且不同发光元件对应接收位置的电磁线圈分别通电，避免巨量转移过程中的错误定位，能有效提高良率。\n\n[0041]本发明实施例二也提供了一种显示面板，与实施例一不同的是，本实施例二中发光元件2的安装面22上的磁性材料层包括多个磁性区域，如图6所示，磁性材料层20包括两个磁性区域201和202，对应的，所述背板1的接收位置100也在相对应的位置设有两个电磁线圈101和102，两个电磁线圈101和102分别与两个磁性区域201和202对应，并在通电后相互吸引，将发光元件定位安装在背板上。设置两个或两个以上磁性区域能够提供多个吸附结合点，这样有利于对发光元件的吸附定位，特别是当发光元件的安装位置不规则时，通过多点吸附时相互作用的磁作用力，能够对发光元件的安装姿态进行细微的调整，进而使发光元件以预设的姿态或角度安装到背板上，这样精准定位有利于后续的封装工序，有利于提高产品良率。\n\n[0042]本实施例中优选两个磁性区域为相反极性的，如图6所示，磁性区域201为与所述背板1对接的一侧为N极，磁性区域202与所述背板1对接的一侧为S极；同样，所述背板1的每个接收位置100下方的电磁线圈的数量为两个，两个所述电磁线圈的螺旋方向相反或通电方向相反，这样在通电后，两个电磁线圈靠近背板上表面的一端的极性正好相反，并且每个电磁线圈靠近背板上表面的一端的极性与对应磁性区域的极性也正好相反，例如，电磁线圈101为靠近背板上表面一端通电后为S极，电磁线圈102为靠近背板上表面一端通电后为N极；这样由于发光单元2与背板1的接收位置100的对接面上同时存在异性磁极之间的吸引力和同性磁极之间的排斥力，在发光元件2的安装定位时，能够在所述吸引力和所述排斥力的同时作用下更准确的将发光元件2以一设定的姿态吸附安装到接受位置100上，实现一次性精准定位，这对于微发光二极管的巨量转移来说具有非常重要的意义，能够显著的提高巨量转移的效率和精度，使得量产的良率显著提高。\n\n[0043]本发明实施例三也提供了一种显示面板，如图7所示，其与上述实施例一和实施例二不同的是，所述发光单元2的安装面22同样形成有多个磁性区域，特别是所述多个磁性区域20与所述背板1对接的一侧同时存在磁性相反的磁极，例如磁性区域203为N极，磁性区域204为S极，而所述背板1的接收位置100下方的膜层中仅设有一个电磁线圈10，所述电磁线圈10是水平布置在所述背板中，即所述电磁线圈10的中心线平行于背板1所在的水平面，亦平行于所述接收位置的表面，这样电磁线圈10两端在通电后会根据电流方向形成N极和S极，例如，电磁线圈第一端103通电后为S极，电磁线圈第二端104通电后为N极，这样也能够分别对发光元件2的安装面22上的磁性区域203、204形成吸引力或排斥力，从而实现调整发光元件的安装姿态，提高磁控巨量转移的效率和良率。\n\n[0044]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0045]以上对本发明实施例进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示面板。\n\n背景技术\n\n[0002]发光二极管(LED)显示面板的应用越来越广泛，不仅包括传统的户外显示场景，也开始应用于室内公共场所，潜在应用还包含穿戴式装置、手机、电视、车载面板、头戴式显示器、显示面板等。在性能上，与液晶显示装置(LCD)或有机发光二极管(OLED)比较，微发光二极管(Micro LED)几乎无懈可击，未来很有可能成为显示的主流。\n\n[0003]目前需要解决的是微发光二极管量产时的巨量转移技术难题和成本问题，巨量转移制程的良率需要达到4σ以上，才有机会达到产品的商品化。现有技术已有的转移技术主要有静电吸附、范德华力、激光烧灼、流体装配等，但以上转移技术要么良率不高，要么成本较大，这成为制约微发光二极管进一步发展的关键因素。\n\n[0004]因此，现有技术存在缺陷，急需改进。\n\n发明内容\n\n[0005]本发明目的为提供一种既能控制成本，又能保证良率的显示面板。\n\n[0006]为实现上述目的，本发明提供一种显示面板，其特征在于，包括：\n\n[0007]背板，所述背板的一侧表面设有多个接收位置，所述背板的膜层中对应每个所述接收位置下方形成有电磁线圈；\n\n[0008]发光元件，所述发光元件具有出光面和远离所述出光面的安装面，所述安装面形成有一层磁性材料层；\n\n[0009]所述接收位置的电磁线圈通电后将所述发光元件吸附安装于所述接收位置。\n\n[0010]特别的，所述接收位置下方的所述膜层包括多个金属层以及相邻所述金属层之间的绝缘层，所述绝缘层上设有过孔，所述金属层经图案化并通过所述过孔连接形成所述电磁线圈。\n\n[0011]特别的，所述金属层包括遮光层、栅极层和金属线层。\n\n[0012]特别的，所述发光元件包括第一发光元件、第二发光元件和第三发光元件，所述接收位置包括安装所述第一发光元件的第一接收位置，安装所述第二发光元件的第二接收位置和安装所述第三发光元件的第三接收位置，多个所述第一接收位置的电磁线圈形成第一电路、多个所述第二接收位置的电磁线圈形成第二电路，多个所述第三接收位置的电磁线圈形成第三电路，所述第一电路、所述第二电路和所述第三电路相互独立。\n\n[0013]特别的，所述磁性材料层通过嵌入或黏附的方式形成于所述安装面。\n\n[0014]特别的，每个所述发光元件的磁性材料层包括一个或多个磁性区域。\n\n[0015]特别的，每个所述发光元件的磁性材料层包括两个极性相反的磁性区域。\n\n[0016]特别的，每个所述接收位置设有两个电磁线圈，所述电磁线圈垂直设置于所述背板中，两个所述电磁线圈的螺旋方向相反或通电方向相反。\n\n[0017]特别的，所述接收位置的所述电磁线圈平行设置于所述背板中，所述电磁线圈的两端分别与所述两个极性相反的磁性区域重合。\n\n[0018]特别的，所述发光元件为微发光二极管。\n\n[0019]本发明的有益效果：通过控制电磁线圈的电源通断可以实现对发光元件吸附安装，能够高效率地完成发光元件的巨量转移，降低制造成本同时提高产品良率。\n\n附图说明\n\n[0020]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0021]图1为本发明实施例一提供的显示面板的结构示意图。\n\n[0022]图2为本发明实施例一提供的显示面板的背板与发光元件对接位置的结构示意图。\n\n[0023]图3-5为本发明实施例一提供的显示面板的发光元件定位安装示意图。\n\n[0024]图6为本发明实施例二提供的显示面板的背板与发光元件对接位置的结构示意图。\n\n[0025]图7为本发明实施例三提供的显示面板的背板与发光元件对接位置的结构示意图。\n\n具体实施方式\n\n[0026]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0027]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0028]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0029]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0030]下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0031]下面结合附图，对具体实施例进行详细说明。\n\n[0032]如图1所示，本发明实施例1提供了一种显示面板，所述显示面板包括背板1和若干个发光元件2，所述背板1包括层叠设置的膜层，所述膜层包括依次层叠设置的基底层11、遮光层12、第一绝缘层13、半导体层14、栅极绝缘层15、栅极层16、第二绝缘层17、源漏层18、第三绝缘层19；在所述背板1的上表面形成有多个用于接收安装发光元件的接收位置100，所述接收位置100下方的膜层中包括多个金属层，金属层之间设有绝缘层，例如遮光层12、栅极层16和源漏层18为金属层，其中遮光层12与栅极层16之间设有第一绝缘层13，栅极层16与源漏层18之间设有第二绝缘层17，第一绝缘层13在每个接收位置100设有过孔31，第二绝缘层17在每个接收位置100设有过孔32，这样可以通过对所述接收位置的各金属层进行图案化处理，然后不同的金属层之间通过过孔连接，形成螺旋线圈结构，螺旋线圈的两端分别接通电源的正负极，制得可以通过电源控制的电磁线圈10，所述电磁线圈10垂直设置在所述背板1的接收位置100下方的膜层中。\n\n[0033]发光元件2是微发光二极管(Micro LED)，包括出光面21和远离出光面的安装面22，在所述安装面22上通过嵌入、黏附、膜层制备等方式制作一层磁性材料层20，所述磁性材料层由磁特性材料制成，所述磁特性材料可以带磁或被磁化，例如Fe3O4、NiFe2O4、BiFeO3、CoFe2O4等材料。\n\n[0034]如图2所示，所述背板1的接收位置100的下方膜层中形成有电磁线圈10，其中电磁线圈10以垂直于所述背板的方向设置，在对电磁线圈10通电后，所述电磁线圈10靠近背板1上表面的一端形成一个磁极，所述磁极与所述发光单元2上的磁性材料层20远离安装面22一侧的磁极相反，通过二者之间异性磁极间的磁吸力作用将发光元件20定位吸附至所述接收位置100上，每个接收位置100吸附安装一个所述发光元件2，完成发光元件的磁控巨量转移。\n\n[0035]由于电磁线圈都通过对背板的膜层结构中的金属层制作得到的，其制造过程可以结合到背板的工艺制程当中，因而无需增加额外的工艺制程，有效的控制了量产成本，同时，通过电磁吸附能够实现高效率的发光元件，特别是微发光二极管芯片的巨量转移，通过通断电就能够实现精准的定位与安装，能够有效提高产品的良率。\n\n[0036]如图3-5所示，本发明实施例还公开了相应的磁控巨量转移的方法。本实施例中，所述发光元件2包括第一发光元件2A、第二发光元件2B和第三发光元件2C，所述第一发光元件2A、第二发光元件2B和第三发光元件2C分别发出红色(R)、绿色(G)和蓝色(B)三种颜色，所述接收位置100相应的设置为包括安装所述第一发光元件2A的第一接收位置100A，安装所述第二发光元件2B的第二接收位置100B和安装所述第三发光元件2C的第三接收位置100C。\n\n[0037]本发明实施例中将多个所述第一接收位置100A下方的电磁线圈串联起来并与电源接通，形成一个单独的第一电路，多个所述第二接收位置100B的电磁线圈形成第二电路，多个所述第三接收位置100C的电磁线圈形成第三电路，所述第一电路、所述第二电路和所述第三电路相互独立。这样可以通过分别控制所述第一电路、所述第二电路和所述第三电路的通断电，来实现指定发光元件的巨量转移。\n\n[0038]如图3所示，将背板1浸入绝缘液体中的支撑柱4上，通过调节支撑柱4的高度使所述背板1位于靠近液面的位置，若干个单色发光元件，例如红色的第一发光元件2A的安装面朝下均匀悬浮在绝缘液体表面，所述绝缘液体可以是纯水。将所述背板1的多个第一接收位置100A下方的电磁线圈连接的第一电路与电源5接通通电，同时将所述第二电路和所述第三电路断电，从而将每个第一发光元件2A分别吸附到一个第一接收位置100A，然后进行干燥和预固定，完成红色发光元件的巨量转移。\n\n[0039]如图4-5所示，再分别完成绿色的第二发光元件2B和蓝色的第三发光元件2C的定位和预固定，进行后续回流焊和封装工艺完成制作。\n\n[0040]由于不同颜色的发光元件对应接收位置的电磁线圈分别在不同的腔室加电，且不同发光元件对应接收位置的电磁线圈分别通电，避免巨量转移过程中的错误定位，能有效提高良率。\n\n[0041]本发明实施例二也提供了一种显示面板，与实施例一不同的是，本实施例二中发光元件2的安装面22上的磁性材料层包括多个磁性区域，如图6所示，磁性材料层20包括两个磁性区域201和202，对应的，所述背板1的接收位置100也在相对应的位置设有两个电磁线圈101和102，两个电磁线圈101和102分别与两个磁性区域201和202对应，并在通电后相互吸引，将发光元件定位安装在背板上。设置两个或两个以上磁性区域能够提供多个吸附结合点，这样有利于对发光元件的吸附定位，特别是当发光元件的安装位置不规则时，通过多点吸附时相互作用的磁作用力，能够对发光元件的安装姿态进行细微的调整，进而使发光元件以预设的姿态或角度安装到背板上，这样精准定位有利于后续的封装工序，有利于提高产品良率。\n\n[0042]本实施例中优选两个磁性区域为相反极性的，如图6所示，磁性区域201为与所述背板1对接的一侧为N极，磁性区域202与所述背板1对接的一侧为S极；同样，所述背板1的每个接收位置100下方的电磁线圈的数量为两个，两个所述电磁线圈的螺旋方向相反或通电方向相反，这样在通电后，两个电磁线圈靠近背板上表面的一端的极性正好相反，并且每个电磁线圈靠近背板上表面的一端的极性与对应磁性区域的极性也正好相反，例如，电磁线圈101为靠近背板上表面一端通电后为S极，电磁线圈102为靠近背板上表面一端通电后为N极；这样由于发光单元2与背板1的接收位置100的对接面上同时存在异性磁极之间的吸引力和同性磁极之间的排斥力，在发光元件2的安装定位时，能够在所述吸引力和所述排斥力的同时作用下更准确的将发光元件2以一设定的姿态吸附安装到接受位置100上，实现一次性精准定位，这对于微发光二极管的巨量转移来说具有非常重要的意义，能够显著的提高巨量转移的效率和精度，使得量产的良率显著提高。\n\n[0043]本发明实施例三也提供了一种显示面板，如图7所示，其与上述实施例一和实施例二不同的是，所述发光单元2的安装面22同样形成有多个磁性区域，特别是所述多个磁性区域20与所述背板1对接的一侧同时存在磁性相反的磁极，例如磁性区域203为N极，磁性区域204为S极，而所述背板1的接收位置100下方的膜层中仅设有一个电磁线圈10，所述电磁线圈10是水平布置在所述背板中，即所述电磁线圈10的中心线平行于背板1所在的水平面，亦平行于所述接收位置的表面，这样电磁线圈10两端在通电后会根据电流方向形成N极和S极，例如，电磁线圈第一端103通电后为S极，电磁线圈第二端104通电后为N极，这样也能够分别对发光元件2的安装面22上的磁性区域203、204形成吸引力或排斥力，从而实现调整发光元件的安装姿态，提高磁控巨量转移的效率和良率。\n\n[0044]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0045]以上对本发明实施例进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10901, 23955, '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种显示面板及显示装置。\n\n背景技术\n\n[0002]现今显示技术领域，越来越多种类的显示器满足人们日益增长的消费需求，量子点显示器(QLED)是将蓝光LED(蓝光发光二极管)转移至阵列基板上，并搭配具有量子点色转换层的彩色滤光基板，通过红色量子点和绿色量子点将蓝光转换成红光和绿光，从而实现彩色显示，其只用转移蓝光LED(蓝光发光二极管)，不仅降低工艺难度，同时可以降低LED成本，且驱动方式更简便。\n\n[0003]虽然技术优势明显，但在实际开发过程中却带来新的问题，例如由于LED内部存在横向电流，LED会向四周以及下方发光，导致子像素之间很容易出现图像串扰现象，即在只点亮绿色子像素的情况下，有蓝光传播到红色子像素和蓝色子像素，本该呈现暗态的红色子像素和蓝色子像素却发光，影响了正常显示。考虑到蓝光LED发出光线的横向传播，可以在设计中增加了挡墙，使其无法在横向传播至其他子像素，但是蓝光LED也有发出光线向下方传播，这部分蓝光通过玻璃界面的反射到达其他子像素，引起图像串扰现象。\n\n发明内容\n\n[0004]本申请实施例提供一种显示面板及显示装置，可以防止蓝光LED发出的光线从下方传播到相邻子像素，从而防止图像串扰现象发生。\n\n[0005]本申请实施例提供一种显示面板，所述显示面板包括相对设置的彩膜基板和阵列基板，所述阵列基板面向所述彩膜基板的一侧设置有多个阵列排布的发光二极管；\n\n[0006]其中，所述阵列基板的背侧设有抗反射结构，所述抗反射结构以独立或整面的形式设置于所述发光二极管的驱动侧，用以减小发光二极管逆向发出的光线在阵列基板内的反射。\n\n[0007]可选的，在本申请的一些实施例中，所述抗反射结构包括均匀分布在所述阵列基板的背侧表面的网点。\n\n[0008]可选的，在本申请的一些实施例中，所述网点包括设于所述阵列基板的背侧表面的多个凹陷点或多个突起点，每一所述凹陷点或每一所述突起点的长度小于100微米。\n\n[0009]可选的，在本申请的一些实施例中，所述突起点由油墨构成。\n\n[0010]可选的，在本申请的一些实施例中，所述阵列基板包括基底，所述抗反射结构包括低折射率层，所述低折射率层的折射率小于所述基底的折射率。\n\n[0011]可选的，在本申请的一些实施例中，所述低折射率层的折射率小于1.5。\n\n[0012]可选的，在本申请的一些实施例中，所述抗反射结构包括增亮膜，所述增亮膜的增透出光方向远离所述发光二极管的方向。\n\n[0013]可选的，在本申请的一些实施例中，所述阵列基板包括多个阵列排布的薄膜晶体管，所述发光二极管为蓝光发光二极管，所述发光二级管与对应的所述薄膜晶体管电性连接；\n\n[0014]所述彩膜基板包括色阻层和黑色遮光层，所述色阻层包括红色色阻、绿色色阻、以及蓝色色阻，且所述红色色阻包括红色量子点，所述绿色色阻包括绿色量子点，所述红色色阻、绿色色阻、以及蓝色色阻之间被所述黑色遮光层间隔，每一所述发光二极管与相应的所述色阻层对位设置。\n\n[0015]可选的，在本申请的一些实施例中，所述阵列基板还包括黑色挡墙，所述黑色挡墙设置在相邻的两所述发光二极管之间。\n\n[0016]相应的，本申请实施例还提供一种显示装置，包括上述任一项所述的显示面板。\n\n[0017]本申请实施例采用在发光二极管的驱动侧设置独立或整面的形式的抗反射结构，抗反射结构减小了发光二极管逆向发出的光线在阵列基板内的反射，从而达到防止图像串扰现象的发生。\n\n附图说明\n\n[0018]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1是本申请一实施例提供的显示面板的断面示意图；\n\n[0020]图2是本申请一实施例提供的显示面板的断面示意图；\n\n[0021]图3是本申请一实施例提供的显示面板的断面示意图；\n\n[0022]图4是本申请一实施例提供的显示面板的断面示意图；\n\n[0023]图5是本申请一实施例提供的显示装置的示意图。\n\n具体实施方式\n\n[0024]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0025]本申请实施例提供一种显示面板及其显示装置。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0026]实施例一\n\n[0027]请参阅图1，本申请的实施例提供了一种显示面板100，显示面板100包括相对设置的彩膜基板201和阵列基板101，阵列基板101面向彩膜基板201的一侧设置有多个阵列排布的发光二极管102。\n\n[0028]其中，阵列基板101的背侧设有抗反射结构301，抗反射结构301以整面的形式设置于发光二极管102的驱动侧，用以减小发光二极管102逆向发出的光线在阵列基板101内的反射。\n\n[0029]阵列基板101包括多个阵列排布的薄膜晶体管(图未示意)，发光二极管102为蓝光发光二极管，发光二级管102与对应的薄膜晶体管电性连接。阵列基板101还包括黑色挡墙103，黑色挡墙103设置在相邻的两发光二极管102之间，黑色挡墙103用以阻挡发光二极管102发出的光线水平传播，防止图像串扰。\n\n[0030]阵列基板101包括基底104，薄膜晶体管设置在基底104上，发光二极管102设置在基底104上并与对应的薄膜晶体管电性连接。\n\n[0031]彩膜基板201包括色阻层和黑色遮光层205，色阻层包括红色色阻202、绿色色阻203、以及蓝色色阻204，且红色色阻202包括红色量子点，绿色色阻203包括绿色量子点，红色色阻202、绿色色阻203、以及蓝色色阻204之间被黑色遮光层205间隔，每一发光二极管102与相应的色阻层对位设置。\n\n[0032]具体的，蓝光发光二极管发出光线经过红色色阻202中的红色量子点转换为红光，蓝光发光二极管发出光线经过绿色色阻203中的绿色量子点转换为绿光，蓝光发光二极管发出光线经过蓝色色阻中可以不经过转换发出蓝光，从而实现彩色显示。可选的，蓝色色阻可以为蓝色滤光层，对蓝光发光二极管发出的蓝光进行选择性吸收，在此不限定。\n\n[0033]具体的，抗反射结构301包括均匀分布在阵列基板101的背侧表面的网点。每一凹陷点的长度小于100微米，每一凹陷点的深度可以为2～2000微米之间。\n\n[0034]具体的，基底背侧设有网点301，基底的背侧指基底远离发光二极管102的表面，网点301均匀分布或按照图案规律分布，例如网点设置在黑色挡墙103的正下方，例如网点设置在发光二极管102的正下方，或者均匀分布于基底104背侧表面的整面。网点为设于基底104背侧的凹陷点，凹陷点是由基底表面凹陷而成的结构，例如当基底104为玻璃时，凹陷点为由激光融化而成。凹陷点可以提供给发光二极管逆向发出光线的一个界面，使得逆向光线被引导从基底104下方出射，即逆向光线无法在玻璃界面全反射，增加了逆向光线从玻璃内部逃逸的几率，从而降低逆向光线向其他子像素传播的可能性，从而防止图像串扰现象的发生。\n\n[0035]实施例二\n\n[0036]请参阅图2，本申请的实施例提供了一种显示面板100，显示面板100包括相对设置的彩膜基板201和阵列基板101，阵列基板101面向彩膜基板201的一侧设置有多个阵列排布的发光二极管102。\n\n[0037]其中，阵列基板101的背侧设有抗反射结构301，抗反射结构301以整面的形式设置于发光二极管102的驱动侧，用以减小发光二极管102逆向发出的光线在阵列基板101内的反射。\n\n[0038]阵列基板101包括多个阵列排布的薄膜晶体管(图未示意)，发光二极管102为蓝光发光二极管，发光二级管102与对应的薄膜晶体管电性连接。阵列基板101还包括黑色挡墙103，黑色挡墙103设置在相邻的两发光二极管102之间，黑色挡墙103用以阻挡发光二极管102发出的光线水平传播，防止图像串扰。\n\n[0039]阵列基板101包括基底104，薄膜晶体管设置在基底104上，发光二极管102设置在基底104上并与对应的薄膜晶体管电性连接。\n\n[0040]彩膜基板201包括色阻层和黑色遮光层205，色阻层包括红色色阻202、绿色色阻203、以及蓝色色阻204，且红色色阻202包括红色量子点，绿色色阻203包括绿色量子点，红色色阻202、绿色色阻203、以及蓝色色阻204之间被黑色遮光层205间隔，每一发光二极管102与相应的色阻层对位设置。\n\n[0041]具体的，蓝光发光二极管发出光线经过红色色阻202中的红色量子点转换为红光，蓝光发光二极管发出光线经过绿色色阻203中的绿色量子点转换为绿光，蓝光发光二极管发出光线经过蓝色色阻中可以不经过转换发出蓝光，从而实现彩色显示。可选的，蓝色色阻可以为蓝色滤光层，对蓝光发光二极管发出的蓝光进行选择性吸收，在此不限定。\n\n[0042]具体的，抗反射结构301包括均匀分布在阵列基板101的背侧表面的突起点。每一突起点的长度小于100微米，每一突起点的高度可以为2～2000微米之间。\n\n[0043]具体的，基底背侧设有网点301，基底的背侧指基底远离发光二极管102的表面，网点301均匀分布或按照图案规律分布，例如网点设置在黑色挡墙103的正下方，例如网点设置在发光二极管102的正下方，或者均匀分布于基底104背侧表面的整面。网点为设于基底104背侧的突起点，突起点可以是油墨构成，例如通过喷涂而成的油墨突起点。突起点可以提供给发光二极管逆向发出光线的一个界面，使得逆向光线被引导从基底104下方出射，或者减小逆向光线在基底内的反射，从而防止图像串扰现象的发生。\n\n[0044]实施例三\n\n[0045]请参阅图3，本申请的实施例提供了一种显示面板100，显示面板100包括相对设置的彩膜基板201和阵列基板101，阵列基板101面向彩膜基板201的一侧设置有多个阵列排布的发光二极管102；\n\n[0046]其中，阵列基板101的背侧设有抗反射结构301，抗反射结构301以独立的形式设置于发光二极管102的驱动侧，用以减小发光二极管102逆向发出的光线在阵列基板101内的反射。\n\n[0047]阵列基板101包括多个阵列排布的薄膜晶体管(图未示意)，发光二极管102为蓝光发光二极管，发光二级管102与对应的薄膜晶体管电性连接。阵列基板101还包括黑色挡墙103，黑色挡墙103设置在相邻的两发光二极管102之间，黑色挡墙103用以阻挡发光二极管102发出的光线水平传播，防止图像串扰。\n\n[0048]阵列基板101包括基底104，薄膜晶体管设置在基底104上，发光二极管102设置在基底104上并与对应的薄膜晶体管电性连接。\n\n[0049]彩膜基板201包括色阻层和黑色遮光层205，色阻层包括红色色阻202、绿色色阻203、以及蓝色色阻204，且红色色阻202包括红色量子点，绿色色阻203包括绿色量子点，红色色阻202、绿色色阻203、以及蓝色色阻204之间被黑色遮光层205间隔，每一发光二极管102与相应的色阻层对位设置。\n\n[0050]具体的，蓝光发光二极管发出光线经过红色色阻202中的红色量子点转换为红光，蓝光发光二极管发出光线经过绿色色阻203中的绿色量子点转换为绿光，蓝光发光二极管发出光线经过蓝色色阻中可以不经过转换发出蓝光，从而实现彩色显示。可选的，蓝色色阻可以为蓝色滤光层，对蓝光发光二极管发出的蓝光进行选择性吸收，在此不限定。\n\n[0051]具体的，抗反射结构301包括低折射率层，低折射率层的折射率小于基底104的折射率。例如在基底104背侧表面沉积低折射率材料层。\n\n[0052]具体的，当基底104为玻璃时，低折射率层的折射率小于1.5。\n\n[0053]具体的，基底背侧设有低折射率层，低折射率层与基底104之间存在一个界面，由于光的传播特性，其会因介质折射率的变化发生偏转，从光密介质进入光疏介质，折射角变大，因此也可以降低逆向光线在基底层的全反射，从而防止图像串扰现象的发生。\n\n[0054]实施例四\n\n[0055]请参阅图4，本申请的实施例提供了一种显示面板100，显示面板100包括相对设置的彩膜基板201和阵列基板101，阵列基板101面向彩膜基板201的一侧设置有多个阵列排布的发光二极管102；\n\n[0056]其中，阵列基板101的背侧设有抗反射结构301，抗反射结构301以独立的形式设置于发光二极管102的驱动侧，用以减小发光二极管102逆向发出的光线在阵列基板101内的反射。\n\n[0057]阵列基板101包括多个阵列排布的薄膜晶体管(图未示意)，发光二极管102为蓝光发光二极管，发光二级管102与对应的薄膜晶体管电性连接。阵列基板101还包括黑色挡墙103，黑色挡墙103设置在相邻的两发光二极管102之间，黑色挡墙103用以阻挡发光二极管102发出的光线水平传播，防止图像串扰。\n\n[0058]阵列基板101包括基底104，薄膜晶体管设置在基底104上，发光二极管102设置在基底104上并与对应的薄膜晶体管电性连接。\n\n[0059]彩膜基板201包括色阻层和黑色遮光层205，色阻层包括红色色阻202、绿色色阻203、以及蓝色色阻204，且红色色阻202包括红色量子点，绿色色阻203包括绿色量子点，红色色阻202、绿色色阻203、以及蓝色色阻204之间被黑色遮光层205间隔，每一发光二极管102与相应的色阻层对位设置。\n\n[0060]具体的，蓝光发光二极管发出光线经过红色色阻202中的红色量子点转换为红光，蓝光发光二极管发出光线经过绿色色阻203中的绿色量子点转换为绿光，蓝光发光二极管发出光线经过蓝色色阻中可以不经过转换发出蓝光，从而实现彩色显示。可选的，蓝色色阻可以为蓝色滤光层，对蓝光发光二极管发出的蓝光进行选择性吸收，在此不限定。\n\n[0061]具体的，抗反射结构301包括增亮膜(DBEF)，增亮膜的增透出光方向为远离发光二极管的方向。\n\n[0062]具体的，可以在基底104的背侧表面贴附增亮膜(DBEF)。当发光二极管102发出的逆向光线到达增亮膜时，增亮膜增加了光线从基底104背侧表面的出光量，从而减小了逆向光线在基底内的反射，从而防止图像串扰现象的发生。\n\n[0063]本申请还提供了一种显示装置500，请参阅图5，显示装置500包括上述任意一种显示面板100，显示装置500还可以选择性的包括保护结构等其他结构或部件300。\n\n[0064]以上对本申请实施例所提供的一种显示面板及显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种显示面板及显示装置。\n\n背景技术\n\n[0002]现今显示技术领域，越来越多种类的显示器满足人们日益增长的消费需求，量子点显示器(QLED)是将蓝光LED(蓝光发光二极管)转移至阵列基板上，并搭配具有量子点色转换层的彩色滤光基板，通过红色量子点和绿色量子点将蓝光转换成红光和绿光，从而实现彩色显示，其只用转移蓝光LED(蓝光发光二极管)，不仅降低工艺难度，同时可以降低LED成本，且驱动方式更简便。\n\n[0003]虽然技术优势明显，但在实际开发过程中却带来新的问题，例如由于LED内部存在横向电流，LED会向四周以及下方发光，导致子像素之间很容易出现图像串扰现象，即在只点亮绿色子像素的情况下，有蓝光传播到红色子像素和蓝色子像素，本该呈现暗态的红色子像素和蓝色子像素却发光，影响了正常显示。考虑到蓝光LED发出光线的横向传播，可以在设计中增加了挡墙，使其无法在横向传播至其他子像素，但是蓝光LED也有发出光线向下方传播，这部分蓝光通过玻璃界面的反射到达其他子像素，引起图像串扰现象。\n\n发明内容\n\n[0004]本申请实施例提供一种显示面板及显示装置，可以防止蓝光LED发出的光线从下方传播到相邻子像素，从而防止图像串扰现象发生。\n\n[0005]本申请实施例提供一种显示面板，所述显示面板包括相对设置的彩膜基板和阵列基板，所述阵列基板面向所述彩膜基板的一侧设置有多个阵列排布的发光二极管；\n\n[0006]其中，所述阵列基板的背侧设有抗反射结构，所述抗反射结构以独立或整面的形式设置于所述发光二极管的驱动侧，用以减小发光二极管逆向发出的光线在阵列基板内的反射。\n\n[0007]可选的，在本申请的一些实施例中，所述抗反射结构包括均匀分布在所述阵列基板的背侧表面的网点。\n\n[0008]可选的，在本申请的一些实施例中，所述网点包括设于所述阵列基板的背侧表面的多个凹陷点或多个突起点，每一所述凹陷点或每一所述突起点的长度小于100微米。\n\n[0009]可选的，在本申请的一些实施例中，所述突起点由油墨构成。\n\n[0010]可选的，在本申请的一些实施例中，所述阵列基板包括基底，所述抗反射结构包括低折射率层，所述低折射率层的折射率小于所述基底的折射率。\n\n[0011]可选的，在本申请的一些实施例中，所述低折射率层的折射率小于1.5。\n\n[0012]可选的，在本申请的一些实施例中，所述抗反射结构包括增亮膜，所述增亮膜的增透出光方向远离所述发光二极管的方向。\n\n[0013]可选的，在本申请的一些实施例中，所述阵列基板包括多个阵列排布的薄膜晶体管，所述发光二极管为蓝光发光二极管，所述发光二级管与对应的所述薄膜晶体管电性连接；\n\n[0014]所述彩膜基板包括色阻层和黑色遮光层，所述色阻层包括红色色阻、绿色色阻、以及蓝色色阻，且所述红色色阻包括红色量子点，所述绿色色阻包括绿色量子点，所述红色色阻、绿色色阻、以及蓝色色阻之间被所述黑色遮光层间隔，每一所述发光二极管与相应的所述色阻层对位设置。\n\n[0015]可选的，在本申请的一些实施例中，所述阵列基板还包括黑色挡墙，所述黑色挡墙设置在相邻的两所述发光二极管之间。\n\n[0016]相应的，本申请实施例还提供一种显示装置，包括上述任一项所述的显示面板。\n\n[0017]本申请实施例采用在发光二极管的驱动侧设置独立或整面的形式的抗反射结构，抗反射结构减小了发光二极管逆向发出的光线在阵列基板内的反射，从而达到防止图像串扰现象的发生。\n\n附图说明\n\n[0018]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1是本申请一实施例提供的显示面板的断面示意图；\n\n[0020]图2是本申请一实施例提供的显示面板的断面示意图；\n\n[0021]图3是本申请一实施例提供的显示面板的断面示意图；\n\n[0022]图4是本申请一实施例提供的显示面板的断面示意图；\n\n[0023]图5是本申请一实施例提供的显示装置的示意图。\n\n具体实施方式\n\n[0024]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0025]本申请实施例提供一种显示面板及其显示装置。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0026]实施例一\n\n[0027]请参阅图1，本申请的实施例提供了一种显示面板100，显示面板100包括相对设置的彩膜基板201和阵列基板101，阵列基板101面向彩膜基板201的一侧设置有多个阵列排布的发光二极管102。\n\n[0028]其中，阵列基板101的背侧设有抗反射结构301，抗反射结构301以整面的形式设置于发光二极管102的驱动侧，用以减小发光二极管102逆向发出的光线在阵列基板101内的反射。\n\n[0029]阵列基板101包括多个阵列排布的薄膜晶体管(图未示意)，发光二极管102为蓝光发光二极管，发光二级管102与对应的薄膜晶体管电性连接。阵列基板101还包括黑色挡墙103，黑色挡墙103设置在相邻的两发光二极管102之间，黑色挡墙103用以阻挡发光二极管102发出的光线水平传播，防止图像串扰。\n\n[0030]阵列基板101包括基底104，薄膜晶体管设置在基底104上，发光二极管102设置在基底104上并与对应的薄膜晶体管电性连接。\n\n[0031]彩膜基板201包括色阻层和黑色遮光层205，色阻层包括红色色阻202、绿色色阻203、以及蓝色色阻204，且红色色阻202包括红色量子点，绿色色阻203包括绿色量子点，红色色阻202、绿色色阻203、以及蓝色色阻204之间被黑色遮光层205间隔，每一发光二极管102与相应的色阻层对位设置。\n\n[0032]具体的，蓝光发光二极管发出光线经过红色色阻202中的红色量子点转换为红光，蓝光发光二极管发出光线经过绿色色阻203中的绿色量子点转换为绿光，蓝光发光二极管发出光线经过蓝色色阻中可以不经过转换发出蓝光，从而实现彩色显示。可选的，蓝色色阻可以为蓝色滤光层，对蓝光发光二极管发出的蓝光进行选择性吸收，在此不限定。\n\n[0033]具体的，抗反射结构301包括均匀分布在阵列基板101的背侧表面的网点。每一凹陷点的长度小于100微米，每一凹陷点的深度可以为2～2000微米之间。\n\n[0034]具体的，基底背侧设有网点301，基底的背侧指基底远离发光二极管102的表面，网点301均匀分布或按照图案规律分布，例如网点设置在黑色挡墙103的正下方，例如网点设置在发光二极管102的正下方，或者均匀分布于基底104背侧表面的整面。网点为设于基底104背侧的凹陷点，凹陷点是由基底表面凹陷而成的结构，例如当基底104为玻璃时，凹陷点为由激光融化而成。凹陷点可以提供给发光二极管逆向发出光线的一个界面，使得逆向光线被引导从基底104下方出射，即逆向光线无法在玻璃界面全反射，增加了逆向光线从玻璃内部逃逸的几率，从而降低逆向光线向其他子像素传播的可能性，从而防止图像串扰现象的发生。\n\n[0035]实施例二\n\n[0036]请参阅图2，本申请的实施例提供了一种显示面板100，显示面板100包括相对设置的彩膜基板201和阵列基板101，阵列基板101面向彩膜基板201的一侧设置有多个阵列排布的发光二极管102。\n\n[0037]其中，阵列基板101的背侧设有抗反射结构301，抗反射结构301以整面的形式设置于发光二极管102的驱动侧，用以减小发光二极管102逆向发出的光线在阵列基板101内的反射。\n\n[0038]阵列基板101包括多个阵列排布的薄膜晶体管(图未示意)，发光二极管102为蓝光发光二极管，发光二级管102与对应的薄膜晶体管电性连接。阵列基板101还包括黑色挡墙103，黑色挡墙103设置在相邻的两发光二极管102之间，黑色挡墙103用以阻挡发光二极管102发出的光线水平传播，防止图像串扰。\n\n[0039]阵列基板101包括基底104，薄膜晶体管设置在基底104上，发光二极管102设置在基底104上并与对应的薄膜晶体管电性连接。\n\n[0040]彩膜基板201包括色阻层和黑色遮光层205，色阻层包括红色色阻202、绿色色阻203、以及蓝色色阻204，且红色色阻202包括红色量子点，绿色色阻203包括绿色量子点，红色色阻202、绿色色阻203、以及蓝色色阻204之间被黑色遮光层205间隔，每一发光二极管102与相应的色阻层对位设置。\n\n[0041]具体的，蓝光发光二极管发出光线经过红色色阻202中的红色量子点转换为红光，蓝光发光二极管发出光线经过绿色色阻203中的绿色量子点转换为绿光，蓝光发光二极管发出光线经过蓝色色阻中可以不经过转换发出蓝光，从而实现彩色显示。可选的，蓝色色阻可以为蓝色滤光层，对蓝光发光二极管发出的蓝光进行选择性吸收，在此不限定。\n\n[0042]具体的，抗反射结构301包括均匀分布在阵列基板101的背侧表面的突起点。每一突起点的长度小于100微米，每一突起点的高度可以为2～2000微米之间。\n\n[0043]具体的，基底背侧设有网点301，基底的背侧指基底远离发光二极管102的表面，网点301均匀分布或按照图案规律分布，例如网点设置在黑色挡墙103的正下方，例如网点设置在发光二极管102的正下方，或者均匀分布于基底104背侧表面的整面。网点为设于基底104背侧的突起点，突起点可以是油墨构成，例如通过喷涂而成的油墨突起点。突起点可以提供给发光二极管逆向发出光线的一个界面，使得逆向光线被引导从基底104下方出射，或者减小逆向光线在基底内的反射，从而防止图像串扰现象的发生。\n\n[0044]实施例三\n\n[0045]请参阅图3，本申请的实施例提供了一种显示面板100，显示面板100包括相对设置的彩膜基板201和阵列基板101，阵列基板101面向彩膜基板201的一侧设置有多个阵列排布的发光二极管102；\n\n[0046]其中，阵列基板101的背侧设有抗反射结构301，抗反射结构301以独立的形式设置于发光二极管102的驱动侧，用以减小发光二极管102逆向发出的光线在阵列基板101内的反射。\n\n[0047]阵列基板101包括多个阵列排布的薄膜晶体管(图未示意)，发光二极管102为蓝光发光二极管，发光二级管102与对应的薄膜晶体管电性连接。阵列基板101还包括黑色挡墙103，黑色挡墙103设置在相邻的两发光二极管102之间，黑色挡墙103用以阻挡发光二极管102发出的光线水平传播，防止图像串扰。\n\n[0048]阵列基板101包括基底104，薄膜晶体管设置在基底104上，发光二极管102设置在基底104上并与对应的薄膜晶体管电性连接。\n\n[0049]彩膜基板201包括色阻层和黑色遮光层205，色阻层包括红色色阻202、绿色色阻203、以及蓝色色阻204，且红色色阻202包括红色量子点，绿色色阻203包括绿色量子点，红色色阻202、绿色色阻203、以及蓝色色阻204之间被黑色遮光层205间隔，每一发光二极管102与相应的色阻层对位设置。\n\n[0050]具体的，蓝光发光二极管发出光线经过红色色阻202中的红色量子点转换为红光，蓝光发光二极管发出光线经过绿色色阻203中的绿色量子点转换为绿光，蓝光发光二极管发出光线经过蓝色色阻中可以不经过转换发出蓝光，从而实现彩色显示。可选的，蓝色色阻可以为蓝色滤光层，对蓝光发光二极管发出的蓝光进行选择性吸收，在此不限定。\n\n[0051]具体的，抗反射结构301包括低折射率层，低折射率层的折射率小于基底104的折射率。例如在基底104背侧表面沉积低折射率材料层。\n\n[0052]具体的，当基底104为玻璃时，低折射率层的折射率小于1.5。\n\n[0053]具体的，基底背侧设有低折射率层，低折射率层与基底104之间存在一个界面，由于光的传播特性，其会因介质折射率的变化发生偏转，从光密介质进入光疏介质，折射角变大，因此也可以降低逆向光线在基底层的全反射，从而防止图像串扰现象的发生。\n\n[0054]实施例四\n\n[0055]请参阅图4，本申请的实施例提供了一种显示面板100，显示面板100包括相对设置的彩膜基板201和阵列基板101，阵列基板101面向彩膜基板201的一侧设置有多个阵列排布的发光二极管102；\n\n[0056]其中，阵列基板101的背侧设有抗反射结构301，抗反射结构301以独立的形式设置于发光二极管102的驱动侧，用以减小发光二极管102逆向发出的光线在阵列基板101内的反射。\n\n[0057]阵列基板101包括多个阵列排布的薄膜晶体管(图未示意)，发光二极管102为蓝光发光二极管，发光二级管102与对应的薄膜晶体管电性连接。阵列基板101还包括黑色挡墙103，黑色挡墙103设置在相邻的两发光二极管102之间，黑色挡墙103用以阻挡发光二极管102发出的光线水平传播，防止图像串扰。\n\n[0058]阵列基板101包括基底104，薄膜晶体管设置在基底104上，发光二极管102设置在基底104上并与对应的薄膜晶体管电性连接。\n\n[0059]彩膜基板201包括色阻层和黑色遮光层205，色阻层包括红色色阻202、绿色色阻203、以及蓝色色阻204，且红色色阻202包括红色量子点，绿色色阻203包括绿色量子点，红色色阻202、绿色色阻203、以及蓝色色阻204之间被黑色遮光层205间隔，每一发光二极管102与相应的色阻层对位设置。\n\n[0060]具体的，蓝光发光二极管发出光线经过红色色阻202中的红色量子点转换为红光，蓝光发光二极管发出光线经过绿色色阻203中的绿色量子点转换为绿光，蓝光发光二极管发出光线经过蓝色色阻中可以不经过转换发出蓝光，从而实现彩色显示。可选的，蓝色色阻可以为蓝色滤光层，对蓝光发光二极管发出的蓝光进行选择性吸收，在此不限定。\n\n[0061]具体的，抗反射结构301包括增亮膜(DBEF)，增亮膜的增透出光方向为远离发光二极管的方向。\n\n[0062]具体的，可以在基底104的背侧表面贴附增亮膜(DBEF)。当发光二极管102发出的逆向光线到达增亮膜时，增亮膜增加了光线从基底104背侧表面的出光量，从而减小了逆向光线在基底内的反射，从而防止图像串扰现象的发生。\n\n[0063]本申请还提供了一种显示装置500，请参阅图5，显示装置500包括上述任意一种显示面板100，显示装置500还可以选择性的包括保护结构等其他结构或部件300。\n\n[0064]以上对本申请实施例所提供的一种显示面板及显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10902, 23956, '技术领域\n\n[0001]本申请涉及显示面板技术领域，尤其涉及一种用于检测微型发光二极管背光模组的检测治具及检测方法。\n\n背景技术\n\n[0002]微型发光二极管(Mini-LED，Micro-LED)显示面板具有寿命长、亮度高、发光效率好、功耗低的优点。随着显示技术的飞速发展，微型发光二极管可以用于液晶显示面板(TFT-LCD)的背光模组，或者微型发光二极管可以直接作为显示面板的像素设置，然而在微型发光二极管的产品制程中，需要对面板进行检测，确认在制程过程中是否存在批量性不良，因为微型发光二极管产品不同于通常的TFT-LCD产品，微型发光二极管产品在制程中段(cell段)量测状态为单板(小片panel的背板)，还未转印和焊接上微型发光二极管，因此无法实现单板(小片panel的背板)点亮进行点灯量测，若前制程出现线路划伤的断路等不良，在制程中段(cell段)无法实现拦捡，从而无法有效快速预警异常，异常风险持续增大，如若在异常的单板(小片panel的背板)上转印和焊接微型发光二极管，就会造成批量性异常货，造成资源和成本损失。\n\n发明内容\n\n[0003]本申请实施例提供了一种检测微型发光二极管背光模组的检测治具及检测方法，检测治具包括至少一检测单元，每一检测单元包括检测发光二极管和两第一检测探针，两第一检测探针的第一端部连接于检测发光二极管的正极和负极；本申请实施例还提供了一种使用检测治具的检测方法；使用检测治具可以在微型发光二极管产品的制程中段(cell段)检测出单板(小片panel的背板，背光模组)是否存在断路等异常。\n\n[0004]本申请提供了一种用于检测微型发光二极管背光模组的检测治具，所述微型发光二极管背光模组包括第一检测信号输入端、第二检测信号输入端和至少一被检测单元，每一所述被检测单元包括连接于所述第一检测信号输入端的第一正极和连接于所述第二检测信号输入端的第一负极，所述第一正极不连接于所述第一负极；\n\n[0005]所述检测治具包括至少一检测单元，每一所述检测单元包括检测发光二极管和两第一检测探针，两所述第一检测探针的第一端部连接于所述检测发光二极管的正极和负极；\n\n[0006]其中，两所述第一检测探针的第二端部用于在检测时电性连接于所述第一正极和所述第一负极。\n\n[0007]在本申请的用于检测微型发光二极管背光模组的检测治具中，所述被检测单元包括第一被检测组和第二被检测组，所述第一被检测组包括所述第一正极和第二负极，所述第二被检测组包括第二正极和所述第一负极，所述第一正极不连接于所述第二负极，所述第二负极连接于所述第二正极，所述第二正极不连接于所述第一负极；\n\n[0008]所述检测单元包括第一检测组和第二检测组，所述第二检测组与所述第一检测组结构相同，所述第一检测组包括所述检测发光二极管和两所述第一检测探针；\n\n[0009]其中，所述第一检测组以及所述第二检测组的所述第一检测探针的所述第二端部用于在检测时对应地电性连接于所述第一被检测组的所述第一正极和所述第二负极以及所述第二被检测组的所述第二正极和所述第一负极。\n\n[0010]在本申请的用于检测微型发光二极管背光模组的检测治具中，所述被检测单元包括第一被检测组和第二被检测组，以及第三被检测组，所述第一被检测组包括所述第一正极和第二负极，所述第二被检测组包括第二正极和所述第一负极，所述第三被检测组包括第三正极和第三负极，所述第一正极不连接于所述第二负极，所述第二负极连接于所述第三正极，所述第三正极不连接于所述第三负极，所述第三负极连接于所述第二正极，所述第二正极不连接于所述第一负极；\n\n[0011]所述检测单元包括第一检测组、第二检测组和第三检测组，所述第二检测组和所述第三检测组与所述第一检测组结构相同，所述第一检测组包括所述检测发光二极管和两所述第一检测探针；\n\n[0012]其中，所述第一检测组、所述第二检测组，以及所述第三检测组的所述第一检测探针的第二端部用于在检测时对应地电性连接于所述第一被检测组的所述第一正极和所述第二负极，所述第二被检测组的所述第二正极和所述第一负极，以及所述第三被检测组的所述第三正极和所述第三负极。\n\n[0013]在本申请的用于检测微型发光二极管背光模组的检测治具中，所述被检测单元包括第一被检测组和第二被检测组，以及M个第三被检测组，所述第一被检测组包括所述第一正极和第二负极，所述第二被检测组包括第二正极和所述第一负极，所述第一正极不连接于所述第二负极，所述第二正极不连接于所述第一负极，每一所述第三被检测组包括第三正极和第三负极，同一所述第三被检测组的所述第三正极与所述第三负极不相连接，每一所述第三被检测组的所述第三正极连接于前一所述第三被检测组的所述第三负极，靠近所述第一被检测组的所述第三被检测组的所述第三正极连接于所述第二负极，靠近所述第二被检测组的所述第三被检测组的所述第三负极连接于所述第二正极；\n\n[0014]所述检测单元还包括第一检测组、第二检测组和M个第三检测组，所述第二检测组和每一所述第三检测组与所述第一检测组结构相同，所述第一检测组包括所述检测发光二极管和两所述第一检测探针；\n\n[0015]其中，所述第一检测组、所述第二检测组，以及M个所述第三检测组的所述第一检测探针的第二端部用于在检测时电性连接于所述第一被检测组的所述第一正极和所述第二负极，所述第二被检测组的所述第二正极和所述第一负极，以及M个所述第三被检测组的所述第三正极和所述第三负极，M为不小于2的整数。\n\n[0016]在本申请的用于检测微型发光二极管背光模组的检测治具中，所述检测治具还包括第二检测探针和第三检测探针，所述第二检测探针的第一端部和所述第三检测探针的第一端部用于在检测时电性连接于检测电源，所述第二检测探针的第二端部用于在检测时电性连接于所述第一检测信号输入端，所述第三检测探针的第二端部用于在检测时电性连接于所述第二检测信号输入端。\n\n[0017]在本申请的用于检测微型发光二极管背光模组的检测治具中，所述背光模组还包括第一薄膜晶体管，所述第一薄膜晶体管的源极电性连接于所述第一检测信号输入端，所述第一薄膜晶体管的漏极电性连接于所述第一正极。\n\n[0018]本申请提供了一种用于检测微型发光二极管背光模组的检测方法，所述检测方法包括如下步骤：\n\n[0019]步骤S1，提供如上所述的所述背光模组和所述检测治具，其中，两所述第一检测探针的所述第二端部连接于所述第一正极和所述第一负极；\n\n[0020]步骤S2，在所述第一检测信号输入端和所述第二检测信号输入端输入检测信号；\n\n[0021]步骤S3，检查所述检测发光二极管发光是否异常，以判定所述微型发光二极管背光模组是否存在不良。\n\n[0022]在本申请的检测方法中，所述检测治具还包括第二检测探针和第三测试探针，所述步骤S1还包括：\n\n[0023]所述第二检测探针的第一端部和所述第三测试探针的第一端部电性连接于检测电源，所述第二检测探针的第二端部电性连接于所述第一检测信号输入端，所述第三检测探针的第二端部电性连接于所述第二检测信号输入端。\n\n[0024]在本申请的检测方法中，所述被检测单元包括第一被检测组和第二被检测组，以及M个第三被检测组，所述第一被检测组包括所述第一正极和第二负极，所述第二被检测组包括第二正极和所述第一负极，所述第一正极不连接于所述第二负极，所述第二正极不连接于所述第一负极，每一所述第三被检测组包括第三正极和第三负极，同一所述第三被检测组的所述第三正极与所述第三负极不相连接，每一所述第三被检测组的所述第三正极连接于前一所述第三被检测组的所述第三负极，靠近所述第一被检测组的所述第三被检测组的所述第三正极连接于所述第二负极，靠近所述第二被检测组的所述第三被检测组的所述第三负极连接于所述第二正极；\n\n[0025]所述检测单元还包括第一检测组、第二检测组和M个第三检测组，所述第二检测组和每一所述第三检测组与所述第一检测组结构相同，所述第一检测组包括所述检测发光二极管和两所述第一检测探针，\n\n[0026]其中，M为不小于2的整数；\n\n[0027]其中，所述步骤S1还包括：\n\n[0028]所述第一检测组、所述第二检测组，以及M个所述第三检测组的所述第一检测探针的第二端部电性连接于所述第一被检测组的所述第一正极和所述第二负极，所述第二被检测组的所述第二正极和所述第一负极，以及M个所述第三被检测组的所述第三正极和所述第三负极。\n\n[0029]本申请的有益效果为：本申请实施例提供了一种检测微型发光二极管背光模组的检测治具，检测治具包括至少一检测单元，每一检测单元包括检测发光二极管和两第一检测探针，两第一检测探针的第一端部连接于检测发光二极管的正极和负极；本申请实施例还提供了一种使用检测治具的检测方法；使用检测治具可以在微型发光二极管产品的制程中段(cell段)检测出单板(小片panel的背板，背光模组)是否存在断路等异常，从而实现在制程中段(cell段)实现拦捡异常，可以有效快速预警异常，避免造成批量性异常货，避免造成资源和成本损失。\n\n附图说明\n\n[0030]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0031]图1为本申请一实施例提供的微型发光二极管背光模组的结构示意图；\n\n[0032]图2为本申请一实施例提供的检测治具的结构示意图；\n\n[0033]图3为本申请一实施例提供的微型发光二极管背光模组的结构示意图；\n\n[0034]图4为本申请一实施例提供的检测治具的结构示意图；\n\n[0035]图5为本申请一实施例提供的微型发光二极管背光模组的结构示意图；\n\n[0036]图6为本申请一实施例提供的检测治具的结构示意图；\n\n[0037]图7为本申请一实施例提供的微型发光二极管背光模组的结构示意图；\n\n[0038]图8为本申请一实施例提供的检测治具的结构示意图；\n\n[0039]图9为本申请一实施例提供的微型发光二极管背光模组的结构示意图；\n\n[0040]图10为本申请一实施例提供的检测治具的结构示意图；\n\n[0041]图11为本申请一实施例提供的微型发光二极管背光模组和检测治具对准连接之前的示意图；\n\n[0042]图12为本申请一实施例提供的微型发光二极管背光模组和检测治具对准连接之后的示意图；\n\n[0043]图13为本申请一实施例提供的微型发光二极管背光模组和检测治具对准连接之后的示意图。\n\n具体实施方式\n\n[0044]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0045]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0046]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0047]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0048]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0049]实施例一\n\n[0050]请参阅图1和图2，本申请的实施例提供了一种用于检测微型发光二极管背光模组10的检测治具20，微型发光二极管背光模组10包括第一检测信号输入端11、第二检测信号输入端12和至少一被检测单元171，每一被检测单元171包括连接于第一检测信号输入端11的第一正极111和连接于第二检测信号输入端12的第一负极112，第一正极111不连接于第一负极112；检测治具20包括至少一检测单元280，每一检测单元280包括检测发光二极管222和两第一检测探针301，两第一检测探针301的第一端部连接于检测发光二极管222的正极211和负极212；其中，两第一检测探针301的第二端部用于在检测时电性连接于第一正极111和第一负极112。\n\n[0051]具体的，微型发光二极管背光模组10(简称为背光模组10)为制程中段(cell段)的单板状态(小片panel的背板，背光模组10的状态)，此时微型发光二极管背光模组10还未转印和焊接上微型发光二极管，在微型发光二极管背光模组10上具有后续工艺中与各个微型发光二极管连接的正极和负极。\n\n[0052]具体的，请参阅图2和图12，图12中举例示意了检测治具20包括两个检测发光二极管222，这里参考图12的检测治具20与微型发光二极管背光模组10的连接检测方式，检测治具20包括至少一检测单元280，每一检测单元280包括检测发光二极管222和两第一检测探针301，两第一检测探针301的第一端部连接于检测发光二极管222的正极211和负极212；其中，如图12所示，两第一检测探针301的第二端部用于在检测时电性连接于第一正极111和第一负极112。\n\n[0053]具体的，请结合图1、图2和图12，图12中举例示意了检测治具20包括两个检测发光二极管222，这里参考图12的检测治具20与微型发光二极管背光模组10的连接检测方式，检测时，第一检测信号输入端11、第一正极111、检测发光二极管222、第一负极112、第二检测信号输入端12、以及检测电源构成检测回路，如果第一检测信号输入端11、第一正极111、第一负极112、以及第二检测信号输入端12之间出现断路等不良，那么检测电源在第一检测信号输入端11和第二检测信号输入端12输入信号后，则检测治具20上的检测发光二极管222不能发光或者发光亮度较低，这样就检测出单板(小片panel的背板)是否存在断路等异常，从而实现在制程中段(cell段)拦捡异常，如果发现异常的单板就不再将此异常单板进行后续的微型发光二极管的转印和焊接工艺，可以有效快速预警异常，避免造成批量性异常货，避免造成资源和成本损失。\n\n[0054]具体的，第一检测信号输入端11通过走线等与第一正极111电性连接，第二检测信号输入端12通过走线等与第一负极112电性连接，第一检测信号输入端11与第一正极111之间、或者/和第二检测信号输入端12与第一负极112之间可以选择性的包括薄膜晶体管，但不限于此。\n\n[0055]具体的，微型发光二极管背光模组10上的检测信号输入端1112包括第一检测信号输入端11和第二检测信号输入端12，在一些实施情况中检测信号输入端1112还可以包括其他的检测信号输入端，或者/和第一检测信号输入端11和第二检测信号输入端12包括多个信号输入端子。\n\n[0056]实施例二\n\n[0057]本实施例与实施例一相同或相似，不同之处在于：\n\n[0058]在一些实施例中，请参阅图3和图4，被检测单元171包括第一被检测组101和第二被检测组102，第一被检测组101包括第一正极111和第二负极122，第二被检测组102包括第二正极121和第一负极112，第一正极111不连接于第二负极122，第二负极122连接于第二正极121，第二正极121不连接于第一负极112；检测单元280包括第一检测组291和第二检测组292，第二检测组292与第一检测组291结构相同，第一检测组291包括检测发光二极管222和两第一检测探针301；其中，第一检测组291以及第二检测组292的第一检测探针301的第二端部用于在检测时对应地电性连接于第一被检测组101的第一正极111和第二负极122以及第二被检测组102的第二正极121和第一负极112。\n\n[0059]具体的，微型发光二极管背光模组10(简称为背光模组10)为制程中段(cell段)的单板状态(小片panel的背板，背光模组10)，此时微型发光二极管背光模组10还未转印和焊接上微型发光二极管，在微型发光二极管背光模组10上具有后续工艺中与各个微型发光二极管连接的正极和负极，其中，每一被检测组101～102对应后续转印和焊接工艺的一颗微型发光二极管，例如，第一被检测组101对应一颗微型发光二极管，第二被检测组102对应另一颗微型发光二极管，第一被检测组101的第一正极111和第二负极122对应一颗微型发光二极管的正极和负极，第二被检测组102的第二正极121和第一负极112对应另一颗微型发光二极管的正极和负极。\n\n[0060]具体的，第二负极122连接于第二正极121，第二负极122与第二正极121串联连接，使得第一被检测组101与第二被检测组102之间串联连接；具体的，第二负极122与第二正极121之间可以通过连接走线181电性连接，但不限于此。\n\n[0061]具体的，请结合图3、图4和图12，检测时，第一检测信号输入端11、第一正极111、检测发光二极管222、第二负极122、第二正极121、检测发光二极管222、第一负极112、第二检测信号输入端12、以及检测电源构成检测回路，如果第一检测信号输入端11、第一正极111、第二负极122、第二正极121、第一负极112、以及第二检测信号输入端12之间出现断路等不良，那么检测电源在第一检测信号输入端11和第二检测信号输入端12输入信号后，则检测治具20上的检测发光二极管222不能发光或者发光亮度较低，这样就检测出单板(小片panel的背板)是否存在断路等异常，从而实现在制程中段(cell段)拦捡异常，如果发现异常的单板就不再将此异常单板进行后续的微型发光二极管的转印和焊接工艺，可以有效快速预警异常，避免造成批量性异常货，避免造成资源和成本损失。\n\n[0062]实施例三\n\n[0063]本实施例与实施例一～实施例二相同或相似，不同之处在于：\n\n[0064]在一些实施例中，请参阅图5和图6，被检测单元171包括第一被检测组101和第二被检测组102，以及第三被检测组103，第一被检测组101包括第一正极111和第二负极122，第二被检测组102包括第二正极121和第一负极112，第三被检测组103包括第三正极131和第三负极132，第一正极111不连接于第二负极122，第二负极122连接于第三正极131，第三正极131不连接于第三负极132，第三负极132连接于第二正极121，第二正极121不连接于第一负极112；检测单元280包括第一检测组291、第二检测组292和第三检测组293，第二检测组291和第三检测组293与第一检测组291结构相同，第一检测组291包括检测发光二极管222和两第一检测探针301；其中，第一检测组291、第二检测组292，以及第三检测组293的第一检测探针301的第二端部用于在检测时对应地电性连接于第一被检测组101的第一正极111和第二负极122，第二被检测组102的第二正极121和第一负极112，以及第三被检测组103的第三正极131和第三负极132。\n\n[0065]具体的，每一被检测组对应后续转印和焊接工艺的一颗微型发光二极管，例如，第一被检测组101对应一颗微型发光二极管，第二被检测组102对应另一颗微型发光二极管，第三被检测组103对应又一颗微型发光二极管，第一被检测组101的第一正极111和第二负极122对应一颗微型发光二极管的正极和负极，第二被检测组102的第二正极121和第一负极112对应另一颗微型发光二极管的正极和负极，第三被检测组103的第三正极131和第三负极132对应又一颗微型发光二极管的正极和负极。\n\n[0066]具体的，两相邻的被检测组之间的连接关系与上述实施例相同，在此不再赘述。\n\n[0067]具体的，检测时构成检测回路的方式与上述实施例相同，在此不再赘述，且具有相同或相近的有益效果。\n\n[0068]实施例四：\n\n[0069]本实施例与实施例一～实施例三相同或相似，不同之处在于：\n\n[0070]在一些实施例中，请参阅图7和图8，被检测单元171包括第一被检测组101和第二被检测组102，以及M个第三被检测组103，第一被检测组101包括第一正极111和第二负极122，第二被检测组102包括第二正极121和第一负极112，第一正极111不连接于第二负极122，第二正极121不连接于第一负极112，每一第三被检测组103包括第三正极131和第三负极132，同一第三被检测组103的第三正极131与第三负极132不相连接，每一第三被检测组103的第三正极131连接于前一第三被检测组103的第三负极132，靠近第一被检测组101的第三被检测组103的第三正极131连接于第二负极122，靠近第二被检测组102的第三被检测组103的第三负极132连接于第二正极121；检测单元280还包括第一检测组291、第二检测组292和M个第三检测组293，第二检测组292和每一第三检测组293与第一检测组291结构相同，第一检测组291包括检测发光二极管222和两第一检测探针301；其中，第一检测组291、第二检测组292，以及M个第三检测组293的第一检测探针301的第二端部用于在检测时电性连接于第一被检测组101的第一正极111和第二负极122，第二被检测组102的第二正极121和第一负极112，以及M个第三被检测组103的第三正极131和第三负极132，M为不小于2的整数。\n\n[0071]需要说明的是，在图7仅仅举例示意了两个第三被检测组103，例如图7中示意了靠近第一被检测组101的第三被检测组103和靠近第二被检测组102的第三被检测组103的两个第三被检测组103；在图8仅仅举例示意了两个第三检测组293，例如图8中示意了靠近第一检测组291的第三检测组293和靠近第二检测组292的第三检测组293的两个第三被检测组293。\n\n[0072]具体的，两相邻的被检测组之间的连接关系与上述实施例相同，在此不再赘述。\n\n[0073]具体的，检测时构成检测回路的方式与上述实施例相同，在此不再赘述，且具有相同或相近的有益效果。\n\n[0074]需要说明的是，在上述实施例中的检测电源第一输入方式可以为：在一些实施例中，请参阅图9、图10、图13，图13中举例示意了检测治具20包括两个检测发光二极管222，这里参考图13的检测治具20与微型发光二极管背光模组10的连接检测方式，检测治具20还包括第二检测探针332和第三检测探针333，第二检测探针332的第一端部和第三检测探针333的第一端部用于在检测时电性连接于检测电源，第二检测探针322的第二端部用于在检测时电性连接于第一检测信号输入端11，第三检测探针333的第二端部用于在检测时电性连接于第二检测信号输入端12。具体的，在一些实施例中，请参阅图9、图10、图13，检测电源的信号先供给到测试治具20，通过测试治具20上的第二检测探针332和第三检测探针333再供给到微型发光二极管背光模组10的第一检测信号输入端11和第二检测信号输入端12。\n\n[0075]需要说明的是，在上述实施例中的检测电源第二输入方式可以为：在一些实施例中，请参阅图4和图12，在检测时，检测电源40直接和检测信号输入端1112的第一检测信号输入端11和第二检测信号输入端12电性连接，而不需要先连接到测试治具20再连接到检测信号输入端1112。\n\n[0076]需要说明的是，在上述实施例中微型发光二极管背光模组10可以采用以下设置，但不限于这些设置：在一些实施例中，背光模组10还包括第一薄膜晶体管，第一薄膜晶体管的源极电性连接于第一检测信号输入端11，第一薄膜晶体管的漏极电性连接于第一正极111；具体的，在一些实施例中，第一检测信号输入端11和被检测单元171之间设置有第一薄膜晶体管，或/和在第二检测信号输入端12和被检测单元171之间设置有第二薄膜晶体管。\n\n[0077]需要说明的是，在上述实施例中微型发光二极管背光模组10可以采用以下设置，但不限于这些设置：具体的，在一些实施例中，每一被检测组内可以选择性的设置有薄膜晶体管，但不限于此；具体的，在一些实施例中，两被检测组之间可以选择性的设置有薄膜晶体管，但不限于此。\n\n[0078]需要说明的是，在上述各个实施例中的微型发光二极管背光模组10中仅仅举例示意了一个被检测单元171，微型发光二极管背光模组10包括至少一被检测单元171，当微型发光二极管背光模组10包括多个被检测单元171时，其他被检测单元171没有示意出。\n\n[0079]本申请的实施例提供了一种用于检测微型发光二极管背光模组10的检测方法，检测方法包括如下步骤：\n\n[0080]步骤S1，提供上述任意一种的背光模组10和检测治具20，例如提供实施例一的背光模组10和检测治具20，例如提供实施例二的背光模组10和检测治具20，例如提供实施例三的背光模组10和检测治具20，例如提供实施例四的背光模组10和检测治具20，在此不限定。其中，两第一检测探针301的第二端部连接于第一正极111和第一负极112。\n\n[0081]具体的，请参阅图11和图12，图11示意了背光模组10和检测治具20对准连接之前的示意图，图12示意了背光模组10和检测治具20对准连接之后的示意图，检测治具20的每一检测组与背光模组10上对应的被检测组对应，通过第一检测探针301接触并电性连接。\n\n[0082]步骤S2，在第一检测信号输入端11和第二检测信号输入端12输入检测信号；具体的，请参阅图12和图13，图12示意了检测电源40直接与背光模组10上的检测信号输入端1112电性连接，图13示意了检测电源的信号先供给到测试治具20，通过测试治具20上的第二检测探针332和第三检测探针333再供给到背光模组10的检测信号输入端1112，检测信号输入端1112包括第一检测信号输入端11和第二检测信号输入端12。\n\n[0083]步骤S3，检查检测发光二极管222发光是否异常，以判定微型发光二极管背光模组10是否存在不良。具体的，如果在上述任意一种实施例中的检测回路中出现断路等不良，那么检测电源在第一检测信号输入端11和第二检测信号输入端12输入信号后，则检测治具20上的检测发光二极管222不能发光或者发光亮度较低，这样就检测出单板(小片panel的背板)是否存在断路等异常，从而实现在制程中段(cell段)拦捡异常，如果发现异常的单板就不再将此异常单板进行后续的微型发光二极管的转印和焊接工艺，可以有效快速预警异常，避免造成批量性异常货，避免造成资源和成本损失。\n\n[0084]需要说明的是，判定微型发光二极管背光模组10是否存在不良的判定方式可以有两种拦捡模式，第一种判定方式是机器自动检查(API自动检查)，测试治具20点亮之后，自动检查设备进行拍照取像，拍照完成之后针对图像进行处理，通过拦捡参数对比并标记出灰度(亮度)异常的检测发光二极管，从而达到检出异常不良；第二种判定方式是人工检模式，测试治具20点亮后，人员针对点亮治具进行目视，通过人员判断治具上检测发光二极管的亮度，可判断出背光模组10是否存在不良。\n\n[0085]在一些实施例中，检测治具20还包括第二检测探针332和第三测试探针333，步骤S1还包括：第二检测探针332的第一端部和第三测试探针333的第一端部电性连接于检测电源40，第二检测探针332的第二端部电性连接于第一检测信号输入端11，第三检测探针333的第二端部电性连接于第二检测信号输入端12。\n\n[0086]具体的，在一些实施例中，参考上述实施例的描述，检测电源40的信号输入方式可以有多种。\n\n[0087]在一些实施例中，被检测单元171包括第一被检测组101和第二被检测组102，以及M个第三被检测组103，第一被检测组101包括第一正极111和第二负极122，第二被检测组102包括第二正极121和第一负极112，第一正极111不连接于第二负极122，第二正极121不连接于第一负极112，每一第三被检测组103包括第三正极131和第三负极132，同一第三被检测组103的第三正极131与第三负极132不相连接，每一第三被检测组103的第三正极131连接于前一第三被检测组103的第三负极132，靠近第一被检测组101的第三被检测组103的第三正极131连接于第二负极122，靠近第二被检测组102的第三被检测组103的第三负极132连接于第二正极121；检测单元280还包括第一检测组291、第二检测组292和M个第三检测组293，第二检测组292和每一第三检测组293与第一检测组291结构相同，第一检测组291包括检测发光二极管222和两第一检测探针301，其中，M为不小于2的整数；\n\n[0088]在一些实施例中，其中，步骤S1还包括：\n\n[0089]第一检测组291、第二检测组292，以及M个第三检测组293的第一检测探针301的第二端部电性连接于第一被检测组101的第一正极111和第二负极122，第二被检测组102的第二正极121和第一负极112，以及M个第三被检测组103的第三正极131和第三负极132。\n\n[0090]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0091]以上对本申请实施例进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示面板技术领域，尤其涉及一种用于检测微型发光二极管背光模组的检测治具及检测方法。\n\n背景技术\n\n[0002]微型发光二极管(Mini-LED，Micro-LED)显示面板具有寿命长、亮度高、发光效率好、功耗低的优点。随着显示技术的飞速发展，微型发光二极管可以用于液晶显示面板(TFT-LCD)的背光模组，或者微型发光二极管可以直接作为显示面板的像素设置，然而在微型发光二极管的产品制程中，需要对面板进行检测，确认在制程过程中是否存在批量性不良，因为微型发光二极管产品不同于通常的TFT-LCD产品，微型发光二极管产品在制程中段(cell段)量测状态为单板(小片panel的背板)，还未转印和焊接上微型发光二极管，因此无法实现单板(小片panel的背板)点亮进行点灯量测，若前制程出现线路划伤的断路等不良，在制程中段(cell段)无法实现拦捡，从而无法有效快速预警异常，异常风险持续增大，如若在异常的单板(小片panel的背板)上转印和焊接微型发光二极管，就会造成批量性异常货，造成资源和成本损失。\n\n发明内容\n\n[0003]本申请实施例提供了一种检测微型发光二极管背光模组的检测治具及检测方法，检测治具包括至少一检测单元，每一检测单元包括检测发光二极管和两第一检测探针，两第一检测探针的第一端部连接于检测发光二极管的正极和负极；本申请实施例还提供了一种使用检测治具的检测方法；使用检测治具可以在微型发光二极管产品的制程中段(cell段)检测出单板(小片panel的背板，背光模组)是否存在断路等异常。\n\n[0004]本申请提供了一种用于检测微型发光二极管背光模组的检测治具，所述微型发光二极管背光模组包括第一检测信号输入端、第二检测信号输入端和至少一被检测单元，每一所述被检测单元包括连接于所述第一检测信号输入端的第一正极和连接于所述第二检测信号输入端的第一负极，所述第一正极不连接于所述第一负极；\n\n[0005]所述检测治具包括至少一检测单元，每一所述检测单元包括检测发光二极管和两第一检测探针，两所述第一检测探针的第一端部连接于所述检测发光二极管的正极和负极；\n\n[0006]其中，两所述第一检测探针的第二端部用于在检测时电性连接于所述第一正极和所述第一负极。\n\n[0007]在本申请的用于检测微型发光二极管背光模组的检测治具中，所述被检测单元包括第一被检测组和第二被检测组，所述第一被检测组包括所述第一正极和第二负极，所述第二被检测组包括第二正极和所述第一负极，所述第一正极不连接于所述第二负极，所述第二负极连接于所述第二正极，所述第二正极不连接于所述第一负极；\n\n[0008]所述检测单元包括第一检测组和第二检测组，所述第二检测组与所述第一检测组结构相同，所述第一检测组包括所述检测发光二极管和两所述第一检测探针；\n\n[0009]其中，所述第一检测组以及所述第二检测组的所述第一检测探针的所述第二端部用于在检测时对应地电性连接于所述第一被检测组的所述第一正极和所述第二负极以及所述第二被检测组的所述第二正极和所述第一负极。\n\n[0010]在本申请的用于检测微型发光二极管背光模组的检测治具中，所述被检测单元包括第一被检测组和第二被检测组，以及第三被检测组，所述第一被检测组包括所述第一正极和第二负极，所述第二被检测组包括第二正极和所述第一负极，所述第三被检测组包括第三正极和第三负极，所述第一正极不连接于所述第二负极，所述第二负极连接于所述第三正极，所述第三正极不连接于所述第三负极，所述第三负极连接于所述第二正极，所述第二正极不连接于所述第一负极；\n\n[0011]所述检测单元包括第一检测组、第二检测组和第三检测组，所述第二检测组和所述第三检测组与所述第一检测组结构相同，所述第一检测组包括所述检测发光二极管和两所述第一检测探针；\n\n[0012]其中，所述第一检测组、所述第二检测组，以及所述第三检测组的所述第一检测探针的第二端部用于在检测时对应地电性连接于所述第一被检测组的所述第一正极和所述第二负极，所述第二被检测组的所述第二正极和所述第一负极，以及所述第三被检测组的所述第三正极和所述第三负极。\n\n[0013]在本申请的用于检测微型发光二极管背光模组的检测治具中，所述被检测单元包括第一被检测组和第二被检测组，以及M个第三被检测组，所述第一被检测组包括所述第一正极和第二负极，所述第二被检测组包括第二正极和所述第一负极，所述第一正极不连接于所述第二负极，所述第二正极不连接于所述第一负极，每一所述第三被检测组包括第三正极和第三负极，同一所述第三被检测组的所述第三正极与所述第三负极不相连接，每一所述第三被检测组的所述第三正极连接于前一所述第三被检测组的所述第三负极，靠近所述第一被检测组的所述第三被检测组的所述第三正极连接于所述第二负极，靠近所述第二被检测组的所述第三被检测组的所述第三负极连接于所述第二正极；\n\n[0014]所述检测单元还包括第一检测组、第二检测组和M个第三检测组，所述第二检测组和每一所述第三检测组与所述第一检测组结构相同，所述第一检测组包括所述检测发光二极管和两所述第一检测探针；\n\n[0015]其中，所述第一检测组、所述第二检测组，以及M个所述第三检测组的所述第一检测探针的第二端部用于在检测时电性连接于所述第一被检测组的所述第一正极和所述第二负极，所述第二被检测组的所述第二正极和所述第一负极，以及M个所述第三被检测组的所述第三正极和所述第三负极，M为不小于2的整数。\n\n[0016]在本申请的用于检测微型发光二极管背光模组的检测治具中，所述检测治具还包括第二检测探针和第三检测探针，所述第二检测探针的第一端部和所述第三检测探针的第一端部用于在检测时电性连接于检测电源，所述第二检测探针的第二端部用于在检测时电性连接于所述第一检测信号输入端，所述第三检测探针的第二端部用于在检测时电性连接于所述第二检测信号输入端。\n\n[0017]在本申请的用于检测微型发光二极管背光模组的检测治具中，所述背光模组还包括第一薄膜晶体管，所述第一薄膜晶体管的源极电性连接于所述第一检测信号输入端，所述第一薄膜晶体管的漏极电性连接于所述第一正极。\n\n[0018]本申请提供了一种用于检测微型发光二极管背光模组的检测方法，所述检测方法包括如下步骤：\n\n[0019]步骤S1，提供如上所述的所述背光模组和所述检测治具，其中，两所述第一检测探针的所述第二端部连接于所述第一正极和所述第一负极；\n\n[0020]步骤S2，在所述第一检测信号输入端和所述第二检测信号输入端输入检测信号；\n\n[0021]步骤S3，检查所述检测发光二极管发光是否异常，以判定所述微型发光二极管背光模组是否存在不良。\n\n[0022]在本申请的检测方法中，所述检测治具还包括第二检测探针和第三测试探针，所述步骤S1还包括：\n\n[0023]所述第二检测探针的第一端部和所述第三测试探针的第一端部电性连接于检测电源，所述第二检测探针的第二端部电性连接于所述第一检测信号输入端，所述第三检测探针的第二端部电性连接于所述第二检测信号输入端。\n\n[0024]在本申请的检测方法中，所述被检测单元包括第一被检测组和第二被检测组，以及M个第三被检测组，所述第一被检测组包括所述第一正极和第二负极，所述第二被检测组包括第二正极和所述第一负极，所述第一正极不连接于所述第二负极，所述第二正极不连接于所述第一负极，每一所述第三被检测组包括第三正极和第三负极，同一所述第三被检测组的所述第三正极与所述第三负极不相连接，每一所述第三被检测组的所述第三正极连接于前一所述第三被检测组的所述第三负极，靠近所述第一被检测组的所述第三被检测组的所述第三正极连接于所述第二负极，靠近所述第二被检测组的所述第三被检测组的所述第三负极连接于所述第二正极；\n\n[0025]所述检测单元还包括第一检测组、第二检测组和M个第三检测组，所述第二检测组和每一所述第三检测组与所述第一检测组结构相同，所述第一检测组包括所述检测发光二极管和两所述第一检测探针，\n\n[0026]其中，M为不小于2的整数；\n\n[0027]其中，所述步骤S1还包括：\n\n[0028]所述第一检测组、所述第二检测组，以及M个所述第三检测组的所述第一检测探针的第二端部电性连接于所述第一被检测组的所述第一正极和所述第二负极，所述第二被检测组的所述第二正极和所述第一负极，以及M个所述第三被检测组的所述第三正极和所述第三负极。\n\n[0029]本申请的有益效果为：本申请实施例提供了一种检测微型发光二极管背光模组的检测治具，检测治具包括至少一检测单元，每一检测单元包括检测发光二极管和两第一检测探针，两第一检测探针的第一端部连接于检测发光二极管的正极和负极；本申请实施例还提供了一种使用检测治具的检测方法；使用检测治具可以在微型发光二极管产品的制程中段(cell段)检测出单板(小片panel的背板，背光模组)是否存在断路等异常，从而实现在制程中段(cell段)实现拦捡异常，可以有效快速预警异常，避免造成批量性异常货，避免造成资源和成本损失。\n\n附图说明\n\n[0030]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0031]图1为本申请一实施例提供的微型发光二极管背光模组的结构示意图；\n\n[0032]图2为本申请一实施例提供的检测治具的结构示意图；\n\n[0033]图3为本申请一实施例提供的微型发光二极管背光模组的结构示意图；\n\n[0034]图4为本申请一实施例提供的检测治具的结构示意图；\n\n[0035]图5为本申请一实施例提供的微型发光二极管背光模组的结构示意图；\n\n[0036]图6为本申请一实施例提供的检测治具的结构示意图；\n\n[0037]图7为本申请一实施例提供的微型发光二极管背光模组的结构示意图；\n\n[0038]图8为本申请一实施例提供的检测治具的结构示意图；\n\n[0039]图9为本申请一实施例提供的微型发光二极管背光模组的结构示意图；\n\n[0040]图10为本申请一实施例提供的检测治具的结构示意图；\n\n[0041]图11为本申请一实施例提供的微型发光二极管背光模组和检测治具对准连接之前的示意图；\n\n[0042]图12为本申请一实施例提供的微型发光二极管背光模组和检测治具对准连接之后的示意图；\n\n[0043]图13为本申请一实施例提供的微型发光二极管背光模组和检测治具对准连接之后的示意图。\n\n具体实施方式\n\n[0044]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0045]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0046]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0047]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0048]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0049]实施例一\n\n[0050]请参阅图1和图2，本申请的实施例提供了一种用于检测微型发光二极管背光模组10的检测治具20，微型发光二极管背光模组10包括第一检测信号输入端11、第二检测信号输入端12和至少一被检测单元171，每一被检测单元171包括连接于第一检测信号输入端11的第一正极111和连接于第二检测信号输入端12的第一负极112，第一正极111不连接于第一负极112；检测治具20包括至少一检测单元280，每一检测单元280包括检测发光二极管222和两第一检测探针301，两第一检测探针301的第一端部连接于检测发光二极管222的正极211和负极212；其中，两第一检测探针301的第二端部用于在检测时电性连接于第一正极111和第一负极112。\n\n[0051]具体的，微型发光二极管背光模组10(简称为背光模组10)为制程中段(cell段)的单板状态(小片panel的背板，背光模组10的状态)，此时微型发光二极管背光模组10还未转印和焊接上微型发光二极管，在微型发光二极管背光模组10上具有后续工艺中与各个微型发光二极管连接的正极和负极。\n\n[0052]具体的，请参阅图2和图12，图12中举例示意了检测治具20包括两个检测发光二极管222，这里参考图12的检测治具20与微型发光二极管背光模组10的连接检测方式，检测治具20包括至少一检测单元280，每一检测单元280包括检测发光二极管222和两第一检测探针301，两第一检测探针301的第一端部连接于检测发光二极管222的正极211和负极212；其中，如图12所示，两第一检测探针301的第二端部用于在检测时电性连接于第一正极111和第一负极112。\n\n[0053]具体的，请结合图1、图2和图12，图12中举例示意了检测治具20包括两个检测发光二极管222，这里参考图12的检测治具20与微型发光二极管背光模组10的连接检测方式，检测时，第一检测信号输入端11、第一正极111、检测发光二极管222、第一负极112、第二检测信号输入端12、以及检测电源构成检测回路，如果第一检测信号输入端11、第一正极111、第一负极112、以及第二检测信号输入端12之间出现断路等不良，那么检测电源在第一检测信号输入端11和第二检测信号输入端12输入信号后，则检测治具20上的检测发光二极管222不能发光或者发光亮度较低，这样就检测出单板(小片panel的背板)是否存在断路等异常，从而实现在制程中段(cell段)拦捡异常，如果发现异常的单板就不再将此异常单板进行后续的微型发光二极管的转印和焊接工艺，可以有效快速预警异常，避免造成批量性异常货，避免造成资源和成本损失。\n\n[0054]具体的，第一检测信号输入端11通过走线等与第一正极111电性连接，第二检测信号输入端12通过走线等与第一负极112电性连接，第一检测信号输入端11与第一正极111之间、或者/和第二检测信号输入端12与第一负极112之间可以选择性的包括薄膜晶体管，但不限于此。\n\n[0055]具体的，微型发光二极管背光模组10上的检测信号输入端1112包括第一检测信号输入端11和第二检测信号输入端12，在一些实施情况中检测信号输入端1112还可以包括其他的检测信号输入端，或者/和第一检测信号输入端11和第二检测信号输入端12包括多个信号输入端子。\n\n[0056]实施例二\n\n[0057]本实施例与实施例一相同或相似，不同之处在于：\n\n[0058]在一些实施例中，请参阅图3和图4，被检测单元171包括第一被检测组101和第二被检测组102，第一被检测组101包括第一正极111和第二负极122，第二被检测组102包括第二正极121和第一负极112，第一正极111不连接于第二负极122，第二负极122连接于第二正极121，第二正极121不连接于第一负极112；检测单元280包括第一检测组291和第二检测组292，第二检测组292与第一检测组291结构相同，第一检测组291包括检测发光二极管222和两第一检测探针301；其中，第一检测组291以及第二检测组292的第一检测探针301的第二端部用于在检测时对应地电性连接于第一被检测组101的第一正极111和第二负极122以及第二被检测组102的第二正极121和第一负极112。\n\n[0059]具体的，微型发光二极管背光模组10(简称为背光模组10)为制程中段(cell段)的单板状态(小片panel的背板，背光模组10)，此时微型发光二极管背光模组10还未转印和焊接上微型发光二极管，在微型发光二极管背光模组10上具有后续工艺中与各个微型发光二极管连接的正极和负极，其中，每一被检测组101～102对应后续转印和焊接工艺的一颗微型发光二极管，例如，第一被检测组101对应一颗微型发光二极管，第二被检测组102对应另一颗微型发光二极管，第一被检测组101的第一正极111和第二负极122对应一颗微型发光二极管的正极和负极，第二被检测组102的第二正极121和第一负极112对应另一颗微型发光二极管的正极和负极。\n\n[0060]具体的，第二负极122连接于第二正极121，第二负极122与第二正极121串联连接，使得第一被检测组101与第二被检测组102之间串联连接；具体的，第二负极122与第二正极121之间可以通过连接走线181电性连接，但不限于此。\n\n[0061]具体的，请结合图3、图4和图12，检测时，第一检测信号输入端11、第一正极111、检测发光二极管222、第二负极122、第二正极121、检测发光二极管222、第一负极112、第二检测信号输入端12、以及检测电源构成检测回路，如果第一检测信号输入端11、第一正极111、第二负极122、第二正极121、第一负极112、以及第二检测信号输入端12之间出现断路等不良，那么检测电源在第一检测信号输入端11和第二检测信号输入端12输入信号后，则检测治具20上的检测发光二极管222不能发光或者发光亮度较低，这样就检测出单板(小片panel的背板)是否存在断路等异常，从而实现在制程中段(cell段)拦捡异常，如果发现异常的单板就不再将此异常单板进行后续的微型发光二极管的转印和焊接工艺，可以有效快速预警异常，避免造成批量性异常货，避免造成资源和成本损失。\n\n[0062]实施例三\n\n[0063]本实施例与实施例一～实施例二相同或相似，不同之处在于：\n\n[0064]在一些实施例中，请参阅图5和图6，被检测单元171包括第一被检测组101和第二被检测组102，以及第三被检测组103，第一被检测组101包括第一正极111和第二负极122，第二被检测组102包括第二正极121和第一负极112，第三被检测组103包括第三正极131和第三负极132，第一正极111不连接于第二负极122，第二负极122连接于第三正极131，第三正极131不连接于第三负极132，第三负极132连接于第二正极121，第二正极121不连接于第一负极112；检测单元280包括第一检测组291、第二检测组292和第三检测组293，第二检测组291和第三检测组293与第一检测组291结构相同，第一检测组291包括检测发光二极管222和两第一检测探针301；其中，第一检测组291、第二检测组292，以及第三检测组293的第一检测探针301的第二端部用于在检测时对应地电性连接于第一被检测组101的第一正极111和第二负极122，第二被检测组102的第二正极121和第一负极112，以及第三被检测组103的第三正极131和第三负极132。\n\n[0065]具体的，每一被检测组对应后续转印和焊接工艺的一颗微型发光二极管，例如，第一被检测组101对应一颗微型发光二极管，第二被检测组102对应另一颗微型发光二极管，第三被检测组103对应又一颗微型发光二极管，第一被检测组101的第一正极111和第二负极122对应一颗微型发光二极管的正极和负极，第二被检测组102的第二正极121和第一负极112对应另一颗微型发光二极管的正极和负极，第三被检测组103的第三正极131和第三负极132对应又一颗微型发光二极管的正极和负极。\n\n[0066]具体的，两相邻的被检测组之间的连接关系与上述实施例相同，在此不再赘述。\n\n[0067]具体的，检测时构成检测回路的方式与上述实施例相同，在此不再赘述，且具有相同或相近的有益效果。\n\n[0068]实施例四：\n\n[0069]本实施例与实施例一～实施例三相同或相似，不同之处在于：\n\n[0070]在一些实施例中，请参阅图7和图8，被检测单元171包括第一被检测组101和第二被检测组102，以及M个第三被检测组103，第一被检测组101包括第一正极111和第二负极122，第二被检测组102包括第二正极121和第一负极112，第一正极111不连接于第二负极122，第二正极121不连接于第一负极112，每一第三被检测组103包括第三正极131和第三负极132，同一第三被检测组103的第三正极131与第三负极132不相连接，每一第三被检测组103的第三正极131连接于前一第三被检测组103的第三负极132，靠近第一被检测组101的第三被检测组103的第三正极131连接于第二负极122，靠近第二被检测组102的第三被检测组103的第三负极132连接于第二正极121；检测单元280还包括第一检测组291、第二检测组292和M个第三检测组293，第二检测组292和每一第三检测组293与第一检测组291结构相同，第一检测组291包括检测发光二极管222和两第一检测探针301；其中，第一检测组291、第二检测组292，以及M个第三检测组293的第一检测探针301的第二端部用于在检测时电性连接于第一被检测组101的第一正极111和第二负极122，第二被检测组102的第二正极121和第一负极112，以及M个第三被检测组103的第三正极131和第三负极132，M为不小于2的整数。\n\n[0071]需要说明的是，在图7仅仅举例示意了两个第三被检测组103，例如图7中示意了靠近第一被检测组101的第三被检测组103和靠近第二被检测组102的第三被检测组103的两个第三被检测组103；在图8仅仅举例示意了两个第三检测组293，例如图8中示意了靠近第一检测组291的第三检测组293和靠近第二检测组292的第三检测组293的两个第三被检测组293。\n\n[0072]具体的，两相邻的被检测组之间的连接关系与上述实施例相同，在此不再赘述。\n\n[0073]具体的，检测时构成检测回路的方式与上述实施例相同，在此不再赘述，且具有相同或相近的有益效果。\n\n[0074]需要说明的是，在上述实施例中的检测电源第一输入方式可以为：在一些实施例中，请参阅图9、图10、图13，图13中举例示意了检测治具20包括两个检测发光二极管222，这里参考图13的检测治具20与微型发光二极管背光模组10的连接检测方式，检测治具20还包括第二检测探针332和第三检测探针333，第二检测探针332的第一端部和第三检测探针333的第一端部用于在检测时电性连接于检测电源，第二检测探针322的第二端部用于在检测时电性连接于第一检测信号输入端11，第三检测探针333的第二端部用于在检测时电性连接于第二检测信号输入端12。具体的，在一些实施例中，请参阅图9、图10、图13，检测电源的信号先供给到测试治具20，通过测试治具20上的第二检测探针332和第三检测探针333再供给到微型发光二极管背光模组10的第一检测信号输入端11和第二检测信号输入端12。\n\n[0075]需要说明的是，在上述实施例中的检测电源第二输入方式可以为：在一些实施例中，请参阅图4和图12，在检测时，检测电源40直接和检测信号输入端1112的第一检测信号输入端11和第二检测信号输入端12电性连接，而不需要先连接到测试治具20再连接到检测信号输入端1112。\n\n[0076]需要说明的是，在上述实施例中微型发光二极管背光模组10可以采用以下设置，但不限于这些设置：在一些实施例中，背光模组10还包括第一薄膜晶体管，第一薄膜晶体管的源极电性连接于第一检测信号输入端11，第一薄膜晶体管的漏极电性连接于第一正极111；具体的，在一些实施例中，第一检测信号输入端11和被检测单元171之间设置有第一薄膜晶体管，或/和在第二检测信号输入端12和被检测单元171之间设置有第二薄膜晶体管。\n\n[0077]需要说明的是，在上述实施例中微型发光二极管背光模组10可以采用以下设置，但不限于这些设置：具体的，在一些实施例中，每一被检测组内可以选择性的设置有薄膜晶体管，但不限于此；具体的，在一些实施例中，两被检测组之间可以选择性的设置有薄膜晶体管，但不限于此。\n\n[0078]需要说明的是，在上述各个实施例中的微型发光二极管背光模组10中仅仅举例示意了一个被检测单元171，微型发光二极管背光模组10包括至少一被检测单元171，当微型发光二极管背光模组10包括多个被检测单元171时，其他被检测单元171没有示意出。\n\n[0079]本申请的实施例提供了一种用于检测微型发光二极管背光模组10的检测方法，检测方法包括如下步骤：\n\n[0080]步骤S1，提供上述任意一种的背光模组10和检测治具20，例如提供实施例一的背光模组10和检测治具20，例如提供实施例二的背光模组10和检测治具20，例如提供实施例三的背光模组10和检测治具20，例如提供实施例四的背光模组10和检测治具20，在此不限定。其中，两第一检测探针301的第二端部连接于第一正极111和第一负极112。\n\n[0081]具体的，请参阅图11和图12，图11示意了背光模组10和检测治具20对准连接之前的示意图，图12示意了背光模组10和检测治具20对准连接之后的示意图，检测治具20的每一检测组与背光模组10上对应的被检测组对应，通过第一检测探针301接触并电性连接。\n\n[0082]步骤S2，在第一检测信号输入端11和第二检测信号输入端12输入检测信号；具体的，请参阅图12和图13，图12示意了检测电源40直接与背光模组10上的检测信号输入端1112电性连接，图13示意了检测电源的信号先供给到测试治具20，通过测试治具20上的第二检测探针332和第三检测探针333再供给到背光模组10的检测信号输入端1112，检测信号输入端1112包括第一检测信号输入端11和第二检测信号输入端12。\n\n[0083]步骤S3，检查检测发光二极管222发光是否异常，以判定微型发光二极管背光模组10是否存在不良。具体的，如果在上述任意一种实施例中的检测回路中出现断路等不良，那么检测电源在第一检测信号输入端11和第二检测信号输入端12输入信号后，则检测治具20上的检测发光二极管222不能发光或者发光亮度较低，这样就检测出单板(小片panel的背板)是否存在断路等异常，从而实现在制程中段(cell段)拦捡异常，如果发现异常的单板就不再将此异常单板进行后续的微型发光二极管的转印和焊接工艺，可以有效快速预警异常，避免造成批量性异常货，避免造成资源和成本损失。\n\n[0084]需要说明的是，判定微型发光二极管背光模组10是否存在不良的判定方式可以有两种拦捡模式，第一种判定方式是机器自动检查(API自动检查)，测试治具20点亮之后，自动检查设备进行拍照取像，拍照完成之后针对图像进行处理，通过拦捡参数对比并标记出灰度(亮度)异常的检测发光二极管，从而达到检出异常不良；第二种判定方式是人工检模式，测试治具20点亮后，人员针对点亮治具进行目视，通过人员判断治具上检测发光二极管的亮度，可判断出背光模组10是否存在不良。\n\n[0085]在一些实施例中，检测治具20还包括第二检测探针332和第三测试探针333，步骤S1还包括：第二检测探针332的第一端部和第三测试探针333的第一端部电性连接于检测电源40，第二检测探针332的第二端部电性连接于第一检测信号输入端11，第三检测探针333的第二端部电性连接于第二检测信号输入端12。\n\n[0086]具体的，在一些实施例中，参考上述实施例的描述，检测电源40的信号输入方式可以有多种。\n\n[0087]在一些实施例中，被检测单元171包括第一被检测组101和第二被检测组102，以及M个第三被检测组103，第一被检测组101包括第一正极111和第二负极122，第二被检测组102包括第二正极121和第一负极112，第一正极111不连接于第二负极122，第二正极121不连接于第一负极112，每一第三被检测组103包括第三正极131和第三负极132，同一第三被检测组103的第三正极131与第三负极132不相连接，每一第三被检测组103的第三正极131连接于前一第三被检测组103的第三负极132，靠近第一被检测组101的第三被检测组103的第三正极131连接于第二负极122，靠近第二被检测组102的第三被检测组103的第三负极132连接于第二正极121；检测单元280还包括第一检测组291、第二检测组292和M个第三检测组293，第二检测组292和每一第三检测组293与第一检测组291结构相同，第一检测组291包括检测发光二极管222和两第一检测探针301，其中，M为不小于2的整数；\n\n[0088]在一些实施例中，其中，步骤S1还包括：\n\n[0089]第一检测组291、第二检测组292，以及M个第三检测组293的第一检测探针301的第二端部电性连接于第一被检测组101的第一正极111和第二负极122，第二被检测组102的第二正极121和第一负极112，以及M个第三被检测组103的第三正极131和第三负极132。\n\n[0090]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0091]以上对本申请实施例进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10903, 23957, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种显示装置、拼接显示装置以及绑定结构。\n\n背景技术\n\n[0002]在现有的显示装置中，均需利用覆晶薄膜(Chip On Film，COF)或柔性电路板(Flexible Printed Circuit，FPC)绑定(Bonding)工艺将显示面板所需的信号输入到面内。已知的一种绑定方法为：将异方性导电胶膜(Anisotropic Conductive Film，ACF)胶贴在COF/FPC或者显示面板上，使COF/FPC与显示面板进行对位，通过加热加压的方式，使ACF胶软化，并使得ACF中包含的金球压破以实现导通，待ACF胶冷却固化，COF/FPC与显示面板间形成稳定的物理和电气连接。然而，在利用ACF胶进行绑定的显示装置中，存在以下问题：ACF胶软化后再固化，经常发生溢胶，溢胶会影响会增加显示装置的宽度，不利于显示装置的窄边框化，且会影响显示装置在拼接显示装置中的应用。\n\n发明内容\n\n[0003]有鉴于此，本申请目的在于提供一种能够防止溢胶，从而缩窄边框的显示装置、拼接显示装置以及绑定结构。\n\n[0004]本申请提供一种显示装置，其包括：\n\n[0005]驱动基板，包括显示区和绑定区，所述显示区与所述绑定区相邻设置，所述驱动基板包括第一绑定垫，所述第一绑定垫位于所述绑定区；\n\n[0006]柔性绑定件，包括第二绑定垫，所述第二绑定垫与所述第一绑定垫相对设置；以及\n\n[0007]第一共晶焊接层，焊接于所述第一绑定垫与所述第二绑定垫之间，所述第一共晶焊接层的材料为共晶合金焊料。\n\n[0008]在一种实施方式中，所述驱动基板包括衬底和钝化层，所述钝化层设置于所述衬底上，所述第一绑定垫设置于所述钝化层远离所述衬底的一侧，所述钝化层靠近所述第一绑定垫的表面具有凹凸结构，所述第一绑定垫覆盖于所述凹凸结构上。\n\n[0009]在一种实施方式中，所述凹凸结构包括多个排列设置的凸起，相邻两个所述凸起之间具有凹陷，每一所述凹陷在垂直于所述驱动基板的方向上的深度小于或者等于所述钝化层的高度的二分之一。\n\n[0010]在一种实施方式中，所述凹陷的宽度范围是50微米至300微米。\n\n[0011]在一种实施方式中，所述第一绑定垫靠近所述显示区的一端到远离所述显示区的一端的长度范围是60微米至500微米。\n\n[0012]在一种实施方式中，所述第一绑定垫的材料和所述第二绑定垫的材料均为金属材料，所述第一绑定垫和所述第二绑定垫均与所述第一共晶焊接层直接接触。\n\n[0013]在一种实施方式中，所述第一共晶焊接层的远离所述显示区的端部位于所述第一绑定垫的远离所述显示区的端部的内侧。\n\n[0014]在一种实施方式中，所述驱动基板还包括衬底、驱动电路、发光二极管芯片和第二共晶焊接层，所述驱动电路、所述发光二极管芯片和所述第二共晶焊接层均设置于所述显示区，所述驱动电路设置于所述衬底上，所述发光二极管芯片设置于所述驱动电路远离所述衬底一侧，所述第二共晶焊接层连接于所述驱动电路与所述发光二极管芯片之间。\n\n[0015]本申请还提供一种拼接显示装置，其包括多个显示装置，所述显示装置为如上任一项所述的显示装置。\n\n[0016]本申请还提供一种绑定结构，其包括：\n\n[0017]第一绑定件，包括第一绑定垫；\n\n[0018]第二绑定件，包括第二绑定垫，所述第二绑定垫与所述第一绑定垫相对设置；\n\n[0019]第一共晶焊接层，焊接于所述第一绑定垫与所述第二绑定垫之间，所述第一共晶焊接层的材料为共晶合金焊料。\n\n[0020]本申请提供的显示装置包括驱动基板、柔性绑定件以及第一共晶焊接层。驱动基板包括显示区和绑定区。显示区与绑定区相邻设置。驱动基板包括第一绑定垫。第一绑定垫位于绑定区。柔性绑定件包括第二绑定垫。第二绑定垫与所述第一绑定垫相对设置。第一共晶焊接层焊接于所述第一绑定垫与所述第二绑定垫之间。第一共晶焊接层的材料为共晶合金焊料。\n\n[0021]本申请显示装置通过使用共晶焊接层焊接驱动基板与柔性绑定件，代替现有技术中使用的ACF胶，从而避免了ACF胶溢胶的问题，能够达到窄边框的效果。\n\n[0022]本申请的拼接显示装置通过使用如上所述的显示装置，能够缩窄边框。\n\n[0023]本申请的绑定结构用于显示装置中能够达到窄边框的效果。\n\n附图说明\n\n[0024]为了更清楚地说明本申请中的技术方案，下面将对实施方式描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施方式，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0025]图1为本申请一个实施方式提供的显示装置的结构示意图。\n\n[0026]图2为图1的凹凸结构的结构示意图。\n\n[0027]图3(a)至3(c)为本申请的其他实施方式的凹凸结构的结构示意图。\n\n[0028]图4是本申请的第一共晶焊接层和第二共晶焊接层的形成的一个步骤的示意图。\n\n[0029]图5为本申请一个实施方式提供的拼接显示装置的结构示意图。\n\n[0030]图6为本申请一个实施方式提供的绑定结构的结构示意图。\n\n具体实施方式\n\n[0031]下面将结合本申请实施方式中的附图，对本申请中的技术方案进行清楚、完整地描述。显然，所描述的实施方式仅仅是本申请一部分实施方式，而不是全部的实施方式。基于本申请中的实施方式，本领域技术人员在没有做出创造性劳动前提下所获得的所有其他实施方式，都属于本申请保护的范围。\n\n[0032]请参考图1，图1为本申请一个实施方式提供的显示装置的结构示意图。\n\n[0033]本申请提供的显示装置100可以为手机、平板电脑、笔记本、游戏机、数码相机、车载导航仪、电子广告牌、自动取款机等具有显示功能的电子设备。\n\n[0034]本申请的显示装置100可以为发光二极管(Light-Emitting Diode，LED)显示装置、微发光二极管(Micro Light-Emitting Diode，Micro-LED)显示装置或者次毫米发光二极管(Mini Light-Emitting Diode，Mini-LED)显示装置中的一种。\n\n[0035]显示装置100包括驱动基板10、柔性绑定件20以及第一共晶焊接层30。柔性绑定件20绑定于驱动基板10上。第一共晶焊接层30位于驱动基板10与柔性绑定件20之间，电连接驱动基板10与柔性绑定件20。具体地，驱动基板10包括第一绑定垫141。柔性绑定件20包括第二绑定垫21。第二绑定垫21与第一绑定垫141相对设置。第一共晶焊接层30焊接于第一绑定垫141与第二绑定垫21之间。第一共晶焊接层30的材料为共晶合金焊料。\n\n[0036]现有技术中，使用ACF胶电连接驱动基板与柔性绑定件，ACF胶溢胶的问题难以避免。由于ACF胶溢胶顶住柔性绑定件，导致柔性绑定件向下弯折时角度变大，显示装置的边框变宽，用于拼接显示时，拼接缝变大。本申请通过使用共晶焊接的方式焊接驱动基板与柔性绑定件，代替现有技术中使用的ACF胶，从而避免了ACF胶溢胶的问题，防止由于ACF胶溢胶顶住柔性绑定件，导致柔性绑定件向下弯折时角度变大，显示装置边框变宽的发生，从而达到窄边框的效果。另外，现有技术的ACF胶贴合的显示面板与COF/FPC之间结合强度低，有时会产生接触不良，从而影响显示效果。而本申请的第一共晶焊接层的结构稳定性较佳，可有效提高第一绑定垫与第二绑定垫之间连接的可靠性，以避免绑定失效的问题。\n\n[0037]以下，对显示装置100的各部件进行详细说明。\n\n[0038]驱动基板10包括显示区DA和绑定区BA。显示区DA与绑定区BA相邻设置。在一个实施方式中，绑定区BA可以位于显示装置100的下边框处。在另一个实施方式中，绑定区BA也可以位于显示装置100的下边框处以及侧边框处。\n\n[0039]在一个实施方式中，显示装置100为微发光二极管显示装置。驱动基板10包括衬底11和依次层叠设置于衬底11上的驱动电路层12、钝化层13、走线层14、第二共晶焊接层15、发光二极管芯片16以及封装层17。其中，驱动电路层12、第二共晶焊接层15、发光二极管芯片16以及封装层17设置于显示区DA。钝化层13和走线层14从显示区DA延伸至绑定区BA。\n\n[0040]在显示区DA中，驱动电路层12设置于衬底11上。钝化层13覆盖驱动电路层12远离衬底11的一面。钝化层13之中开设有过孔13a。走线层14位于钝化层13远离驱动电路层12的一面。需要说明的是，走线层14并非形成为一整片，而是包括多个相互独立的走线图案。发光二极管芯片16设置于走线层14远离钝化层13的一侧。第二共晶焊接层15位于发光二极管芯片16与走线层14之间。第二共晶焊接层15电连接发光二极管芯片16和走线层14。走线层14通过开设于钝化层13中的过孔13a电连接于驱动电路层12。第二共晶焊接层15与第一共晶焊接层30可以采用相同材料，并在同一制程中形成。在一个实施方式中，走线层14通过开设于钝化层13中的过孔13a电连接于驱动电路层12的漏极。发光二极管芯片16经由走线层14电连接于驱动电路层12。封装层17覆盖于发光二极管芯片16远离走线层14的一面，对发光二极管芯片16进行封装。\n\n[0041]具体地，衬底11可以为玻璃基板，塑料基板等。\n\n[0042]在一个实施方式中，驱动电路层12包括驱动电路。驱动电路包括一个或多个薄膜晶体管。薄膜晶体管可以为底栅型薄膜晶体管。具体地，驱动电路层12包括依次层叠设置在衬底11上的栅极GE、栅极绝缘层GI、有源层CL、源极SE以及漏极DE。栅极GE设置于衬底11上。栅极绝缘层GI覆盖栅极GE以及衬底11。有源层CL位于栅极绝缘层GI远离衬底11的一面。有源层CL对应于栅极GE设置。源极SE和漏极DE位于有源层CL远离栅极GE的一面，并分别与有源层CL的两端连接。\n\n[0043]可以理解，本申请不限定驱动电路层12中所包含的薄膜晶体管的结构，其可以为顶栅型薄膜晶体管，也可以为底栅型薄膜晶体管，也可以为双栅极型薄膜晶体管。\n\n[0044]钝化层13的材料为有机材料。有机材料包含但不限于环氧树脂、聚甲基丙烯酸甲酯(polymethylmetacrylate，PMMA)、苯并环丁烯(benzocyclobutene，BCB)、聚酰亚胺、聚酯、聚二甲基硅氧烷(polydimethylsiloxane，PDMS)、四氟乙烯-全氟烷氧基乙烯基醚共聚物(polyfluoroalkoxy，PFA)中的一种或多种。在一个实施方式中，有机材料为PFA。\n\n[0045]走线层14的材料可以为金属材料。在一个实施方式中，走线层14的材料为铜。走线层14在显示区DA包括用于电连接驱动电路层12和发光二极管芯片16的走线图案。\n\n[0046]发光二极管芯片16可以为微发光二极管芯片。通过将单个微发光二极管芯片通过巨量转移技术与驱动基板10键合，以实现微发光二极管芯片与驱动基板10上的驱动电路层12连接。在其他实施方式中，发光二极管芯片16也可以为LED芯片或者mini-LED芯片。\n\n[0047]封装层17的材料可以为硅胶。\n\n[0048]在绑定区BA中，钝化层13设置于衬底11上。走线层14位于钝化层13远离衬底11的一侧。可以理解，钝化层13与衬底11之间还有其他膜层，在此不再赘述。\n\n[0049]走线层14包括第一绑定垫141。在一个实施方式中，钝化层13的靠近第一绑定垫141的表面具有凹凸结构131。第一绑定垫141覆盖于凹凸结构131上。由于走线层14的厚度较薄，第一绑定垫141覆盖于凹凸结构131上时，会形成与凹凸结构131相似的凹凸形状。通过在钝化层13上设置凹凸结构131，能够改变绑定区BA的地形，增加第一绑定垫141的表面积，从而与第一共晶焊接层30以及第二绑定垫21的接触面积，从增加驱动基板10与柔性绑定件20之间的结合力。\n\n[0050]请参考图2，图2为图1的凹凸结构的结构示意图。在一个实施方式中，凹凸结构131包括多个排列的凸起1311。多个排列的凸起1311在从靠近显示区DA到远离显示区DA的方向上。相邻两个凸起1311之间设置有凹陷1312。本申请不限定凹陷1312的形状，在本实施方式中，凹陷1312的在垂直于衬底11的上表面方向上的截面为三角形。请参考图3(a)至3(c)，图3(a)至3(c)为本申请的实施方式的凹凸结构的结构示意图。凸起1311在垂直于衬底11的上表面方向上的截面为矩形、梯形或者半圆形。在具体的实施方式中，凸起1311的形状可以为三棱柱、四棱柱、棱台或者半球。每一凹陷1312在垂直于衬底11的上表面方向上的深度H1小于或者等于钝化层13的厚度H2的二分之一。\n\n[0051]在一个具体的实施方式中，钝化层13的厚度H2为6微米至8微米。钝化层13的厚度H2具体可以为6微米、6.5微米、7微米、7.5微米至8微米。每一凹陷1312在垂直于衬底11的上表面方向上的深度H1范围为2微米至3.5微米。在一个实施方式中，每一凹陷1312在垂直于衬底11的上表面的方向上的深度H1为2微米、2.5微米、3微米或者3.5微米。在一个实施方式中，所述凹陷1312的宽度W范围是50微米至300微米。具体地，凹陷1312的宽度W可以是50微米、60微米、70微米、80微米、90微米、100微米、150微米、200微米、250微米或者300微米。如果凹陷1312深度H1过大，可能会穿透钝化层13，如果凹陷1312深度H1过小，第一绑定垫141与第二绑定垫21之间的拉拔力不足。因此，将凹陷1312深度H1设置在该范围内，即不会破坏钝化层13结构，能够保证第一绑定垫141与第二绑定垫21之间的拉拔力。\n\n[0052]第一绑定垫141靠近显示区DA的一端到远离显示区DA的一端的长度L范围是60微米至500微米。第一绑定垫141靠近显示区DA的一端到远离显示区DA的一端的长度L可以是60微米、70微米、80微米、90微米、100微米、200微米、300微米、400微米或者500微米。在使用ACF胶进行绑定的现有技术中，为了保证接触阻抗足够小，显示面板上的绑定垫(Pad)需要一定的长度，进一步导致边框变宽。相较于现有技术，本申请使用共晶焊接材料焊接第一绑定垫141和第二绑定垫21，金属与金属的熔合能够有效降低欧姆阻抗能，即使缩短绑定垫的长度也能保证足够小的接触阻抗。在能够保证足够小的接触阻抗的情况下，可以将第一绑定垫141的长度L缩短至60微米至500微米的范围内，从而达到窄边框的效果。\n\n[0053]柔性绑定件20弯折到驱动基板10的背面，从而实现窄边框。柔性绑定件20可以为覆晶薄膜(Chip On Film，COF)或柔性电路板(Flexible Printed Circuit，FPC)。显示装置100可以包括印刷电路板40(printed circuit board，PCB)。印刷电路板40连接于覆晶薄膜或柔性电路板远离驱动基板10的一端。在本实施方式中，柔性绑定件20包括覆晶薄膜。显示装置100还包括与覆晶薄膜绑定连接的柔性电路板(Flexible Printed Circuit，FPC)以及连接于柔性电路板远离驱动基板10的一端的印刷电路板40。在另一种实施方式中，柔性绑定件20为柔性电路板。柔性电路板远离驱动基板10的一端连接有印刷电路板40。\n\n[0054]在一个实施方式中，第二绑定垫21的材料与第一绑定垫141的材料均为金属材料。第一绑定垫141和第二绑定垫21均与第一共晶焊接层30直接接触。使用ACF胶进行绑定的现有技术中，为了防止绑定垫表面发生氧化，接触阻抗增大，通常需要在绑定垫的表面形成氧化铟锡层防氧化，导致成本变高。而本申请通过使金属材料制成的第一绑定垫141和第二绑定垫21与合金材料的第一共晶焊接层30直接接触，由于金属原子之间结合紧密，第一绑定垫141和第二绑定垫21不容易被氧化。因此，不需要在第一绑定垫141和第二绑定垫21上制作氧化铟锡防氧化层。由此，节约了制程，提高了成本。\n\n[0055]第一共晶焊接层30利用共晶焊接的方法形成于第一绑定垫141与第二绑定垫21之间。共晶焊接是一种低熔点的合金焊接，它是指在相对较低的温度下共晶焊料发生共晶物熔合的现象，共晶合金直接从固态变成液态，而不经过塑性阶段。共晶合金焊料是由两种或者两种以上的若干金属组成的合金。在一种实施方式中，共晶合金焊料可以为金锡合金(Au/Su)，质量比：10/90，熔点210℃。在其他实施方式中，共晶合金焊料还可以为银锡合金(Ag/Sn)、金锗合金(Au/Ge)、金硅合金(Au/Si)等。\n\n[0056]在一个实施方式中，第一共晶焊接层30靠近第一绑定垫141的表面具有与凹凸结构131相匹配的形状。\n\n[0057]在一个实施方式中，第一共晶焊接层30的远离显示区DA的端部E1位于第一绑定垫141的远离显示区DA的端部E2的内侧。第一共晶焊接层30的远离显示区DA的端部E1可以与第二绑定垫21的远离显示区DA的端部E2齐平。第一共晶焊接层30通过在第一绑定垫141或者第二绑定垫21上打印共晶合金焊料，形成共晶焊接图案，再加热完成共晶固化。因此，第一共晶焊接层30的长度和位置可以控制。将第一共晶焊接层30的远离显示区DA的端部E1设置为位于第一绑定垫141的远离显示区DA的端部E2的内侧，能够缩窄边框。\n\n[0058]请一并参考图1和参考图4，图4是本申请的第一共晶焊接层和第二共晶焊接层的形成的一个步骤的示意图。本申请显示装置的第一共晶焊接层30和第二共晶焊接层15可以通过以下方式形成：在第一绑定垫141和走线层14上印刷形成共晶合金焊料200，印刷的方式可以是钢网印刷；使第二绑定垫21与第一绑定垫141对位贴合并利用高温胶带进行简单定位，进行微发光二极管芯片15打件(Die Bond)；加热共晶合金焊料200，使共晶合金焊料200固化形成第一共晶焊接层30和第二共晶焊接层15。加热固化的方式可以是将驱动基板10与柔性绑定件20一起放入加热炉中进行加热，也可以是单独对共晶合金焊料200进行激光加热。\n\n[0059]本申请提供的显示装置包括驱动基板、柔性绑定件以及第一共晶焊接层。驱动基板包括显示区和绑定区。显示区与绑定区相邻设置。驱动基板包括第一绑定垫。第一绑定垫位于绑定区。柔性绑定件包括第二绑定垫。第二绑定垫与所述第一绑定垫相对设置。第一共晶焊接层焊接于所述第一绑定垫与所述第二绑定垫之间。第一共晶焊接层的材料为共晶合金焊料。本申请通过使用共晶焊接层焊接驱动基板与柔性绑定件，代替现有技术中使用的ACF胶，从而避免了ACF胶溢胶的问题，能够达到窄边框的效果。\n\n[0060]请参考图5，图5为本申请一个实施方式提供的拼接显示装置的结构示意图。本申请的拼接显示装置1包括多个显示装置100。多个显示装置100按照一定方式排列并拼接形成拼接显示装置1。其中，绑定区BA位于显示装置100的下边框处。本申请的拼接显示装置1使用如上所述的显示装置100，能够缩窄边框，并具有如上显示装置的所有技术效果。\n\n[0061]本申请还提供一种绑定结构200。请参考图6，图6为本申请提供的绑定结构的结构示意图。绑定结构200包括第一绑定件210、第二绑定件220以及共晶焊接层230。第一绑定件210包括第一绑定垫2141。第二绑定件220包括第二绑定垫221。第二绑定垫221与第一绑定垫2141相对设置。共晶焊接层230焊接于第一绑定垫2141与第二绑定垫221之间。共晶焊接层230的材料为共晶合金焊料。\n\n[0062]第一绑定件210可以为显示面板、COF、FPC或PCB。第二绑定件220也可以为显示面板、COF、FPC或PCB。在一个实施方式中，第一绑定件210为显示面板。第二绑定件220为COF。\n\n[0063]第一绑定件210可以包括衬底211和有机层213。有机层213设置于衬底211上，第一绑定垫2141设置于有机层213远离衬底211的一侧。有机层213的材料包含但不限于环氧树脂、聚甲基丙烯酸甲酯(polymethylmetacrylate，PMMA)、苯并环丁烯(benzocyclobutene，BCB)、聚酰亚胺、聚酯、聚二甲基硅氧烷(polydimethylsiloxane，PDMS)、四氟乙烯-全氟烷氧基乙烯基醚共聚物(polyfluoroalkoxy，PFA)中的一种或多种。在一个实施方式中，有机层的材料为PFA。\n\n[0064]有机层213的靠近第一绑定垫2141的表面具有凹凸结构2131。第一绑定垫2141覆盖于凹凸结构2131上。由于第一绑定垫2141的厚度较薄，第一绑定垫2141覆盖于凹凸结构2131上时，会形成与凹凸结构2131相似的凹凸形状。通过在有机层上设置凹凸结构2131，能够改变第一绑定垫2141的地形，增加第一绑定垫2141的表面积，从而与共晶焊接层以及第二绑定垫221的接触面积，从增加第一绑定件210与第二绑定件220之间的结合力。凹凸结构2131可以参考图1和图3(a)至图3(c)中的结构和尺寸，在此不再赘述。\n\n[0065]共晶合金焊料的材料为共晶合金焊料。在一种实施方式中，共晶合金焊料可以为金锡合金(Au/Su)，质量比：10/90，熔点210℃。在其他实施方式中，共晶合金焊料还可以为银锡合金(Ag/Sn)、金锗合金(Au/Ge)、金硅合金(Au/Si)等。\n\n[0066]本申请的绑定结构包括：第一绑定件、第二绑定件以及第一共晶焊接层。第一绑定件包括第一绑定垫。第二绑定件包括第二绑定垫。所述第二绑定垫与所述第一绑定垫相对设置。第一共晶焊接层焊接于所述第一绑定垫与所述第二绑定垫之间。所述第一共晶焊接层的材料为共晶合金焊料。本申请的绑定结构用于显示装置中能够达到窄边框的效果。\n\n[0067]以上对本申请实施方式提供了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施方式的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种显示装置、拼接显示装置以及绑定结构。\n\n背景技术\n\n[0002]在现有的显示装置中，均需利用覆晶薄膜(Chip On Film，COF)或柔性电路板(Flexible Printed Circuit，FPC)绑定(Bonding)工艺将显示面板所需的信号输入到面内。已知的一种绑定方法为：将异方性导电胶膜(Anisotropic Conductive Film，ACF)胶贴在COF/FPC或者显示面板上，使COF/FPC与显示面板进行对位，通过加热加压的方式，使ACF胶软化，并使得ACF中包含的金球压破以实现导通，待ACF胶冷却固化，COF/FPC与显示面板间形成稳定的物理和电气连接。然而，在利用ACF胶进行绑定的显示装置中，存在以下问题：ACF胶软化后再固化，经常发生溢胶，溢胶会影响会增加显示装置的宽度，不利于显示装置的窄边框化，且会影响显示装置在拼接显示装置中的应用。\n\n发明内容\n\n[0003]有鉴于此，本申请目的在于提供一种能够防止溢胶，从而缩窄边框的显示装置、拼接显示装置以及绑定结构。\n\n[0004]本申请提供一种显示装置，其包括：\n\n[0005]驱动基板，包括显示区和绑定区，所述显示区与所述绑定区相邻设置，所述驱动基板包括第一绑定垫，所述第一绑定垫位于所述绑定区；\n\n[0006]柔性绑定件，包括第二绑定垫，所述第二绑定垫与所述第一绑定垫相对设置；以及\n\n[0007]第一共晶焊接层，焊接于所述第一绑定垫与所述第二绑定垫之间，所述第一共晶焊接层的材料为共晶合金焊料。\n\n[0008]在一种实施方式中，所述驱动基板包括衬底和钝化层，所述钝化层设置于所述衬底上，所述第一绑定垫设置于所述钝化层远离所述衬底的一侧，所述钝化层靠近所述第一绑定垫的表面具有凹凸结构，所述第一绑定垫覆盖于所述凹凸结构上。\n\n[0009]在一种实施方式中，所述凹凸结构包括多个排列设置的凸起，相邻两个所述凸起之间具有凹陷，每一所述凹陷在垂直于所述驱动基板的方向上的深度小于或者等于所述钝化层的高度的二分之一。\n\n[0010]在一种实施方式中，所述凹陷的宽度范围是50微米至300微米。\n\n[0011]在一种实施方式中，所述第一绑定垫靠近所述显示区的一端到远离所述显示区的一端的长度范围是60微米至500微米。\n\n[0012]在一种实施方式中，所述第一绑定垫的材料和所述第二绑定垫的材料均为金属材料，所述第一绑定垫和所述第二绑定垫均与所述第一共晶焊接层直接接触。\n\n[0013]在一种实施方式中，所述第一共晶焊接层的远离所述显示区的端部位于所述第一绑定垫的远离所述显示区的端部的内侧。\n\n[0014]在一种实施方式中，所述驱动基板还包括衬底、驱动电路、发光二极管芯片和第二共晶焊接层，所述驱动电路、所述发光二极管芯片和所述第二共晶焊接层均设置于所述显示区，所述驱动电路设置于所述衬底上，所述发光二极管芯片设置于所述驱动电路远离所述衬底一侧，所述第二共晶焊接层连接于所述驱动电路与所述发光二极管芯片之间。\n\n[0015]本申请还提供一种拼接显示装置，其包括多个显示装置，所述显示装置为如上任一项所述的显示装置。\n\n[0016]本申请还提供一种绑定结构，其包括：\n\n[0017]第一绑定件，包括第一绑定垫；\n\n[0018]第二绑定件，包括第二绑定垫，所述第二绑定垫与所述第一绑定垫相对设置；\n\n[0019]第一共晶焊接层，焊接于所述第一绑定垫与所述第二绑定垫之间，所述第一共晶焊接层的材料为共晶合金焊料。\n\n[0020]本申请提供的显示装置包括驱动基板、柔性绑定件以及第一共晶焊接层。驱动基板包括显示区和绑定区。显示区与绑定区相邻设置。驱动基板包括第一绑定垫。第一绑定垫位于绑定区。柔性绑定件包括第二绑定垫。第二绑定垫与所述第一绑定垫相对设置。第一共晶焊接层焊接于所述第一绑定垫与所述第二绑定垫之间。第一共晶焊接层的材料为共晶合金焊料。\n\n[0021]本申请显示装置通过使用共晶焊接层焊接驱动基板与柔性绑定件，代替现有技术中使用的ACF胶，从而避免了ACF胶溢胶的问题，能够达到窄边框的效果。\n\n[0022]本申请的拼接显示装置通过使用如上所述的显示装置，能够缩窄边框。\n\n[0023]本申请的绑定结构用于显示装置中能够达到窄边框的效果。\n\n附图说明\n\n[0024]为了更清楚地说明本申请中的技术方案，下面将对实施方式描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施方式，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0025]图1为本申请一个实施方式提供的显示装置的结构示意图。\n\n[0026]图2为图1的凹凸结构的结构示意图。\n\n[0027]图3(a)至3(c)为本申请的其他实施方式的凹凸结构的结构示意图。\n\n[0028]图4是本申请的第一共晶焊接层和第二共晶焊接层的形成的一个步骤的示意图。\n\n[0029]图5为本申请一个实施方式提供的拼接显示装置的结构示意图。\n\n[0030]图6为本申请一个实施方式提供的绑定结构的结构示意图。\n\n具体实施方式\n\n[0031]下面将结合本申请实施方式中的附图，对本申请中的技术方案进行清楚、完整地描述。显然，所描述的实施方式仅仅是本申请一部分实施方式，而不是全部的实施方式。基于本申请中的实施方式，本领域技术人员在没有做出创造性劳动前提下所获得的所有其他实施方式，都属于本申请保护的范围。\n\n[0032]请参考图1，图1为本申请一个实施方式提供的显示装置的结构示意图。\n\n[0033]本申请提供的显示装置100可以为手机、平板电脑、笔记本、游戏机、数码相机、车载导航仪、电子广告牌、自动取款机等具有显示功能的电子设备。\n\n[0034]本申请的显示装置100可以为发光二极管(Light-Emitting Diode，LED)显示装置、微发光二极管(Micro Light-Emitting Diode，Micro-LED)显示装置或者次毫米发光二极管(Mini Light-Emitting Diode，Mini-LED)显示装置中的一种。\n\n[0035]显示装置100包括驱动基板10、柔性绑定件20以及第一共晶焊接层30。柔性绑定件20绑定于驱动基板10上。第一共晶焊接层30位于驱动基板10与柔性绑定件20之间，电连接驱动基板10与柔性绑定件20。具体地，驱动基板10包括第一绑定垫141。柔性绑定件20包括第二绑定垫21。第二绑定垫21与第一绑定垫141相对设置。第一共晶焊接层30焊接于第一绑定垫141与第二绑定垫21之间。第一共晶焊接层30的材料为共晶合金焊料。\n\n[0036]现有技术中，使用ACF胶电连接驱动基板与柔性绑定件，ACF胶溢胶的问题难以避免。由于ACF胶溢胶顶住柔性绑定件，导致柔性绑定件向下弯折时角度变大，显示装置的边框变宽，用于拼接显示时，拼接缝变大。本申请通过使用共晶焊接的方式焊接驱动基板与柔性绑定件，代替现有技术中使用的ACF胶，从而避免了ACF胶溢胶的问题，防止由于ACF胶溢胶顶住柔性绑定件，导致柔性绑定件向下弯折时角度变大，显示装置边框变宽的发生，从而达到窄边框的效果。另外，现有技术的ACF胶贴合的显示面板与COF/FPC之间结合强度低，有时会产生接触不良，从而影响显示效果。而本申请的第一共晶焊接层的结构稳定性较佳，可有效提高第一绑定垫与第二绑定垫之间连接的可靠性，以避免绑定失效的问题。\n\n[0037]以下，对显示装置100的各部件进行详细说明。\n\n[0038]驱动基板10包括显示区DA和绑定区BA。显示区DA与绑定区BA相邻设置。在一个实施方式中，绑定区BA可以位于显示装置100的下边框处。在另一个实施方式中，绑定区BA也可以位于显示装置100的下边框处以及侧边框处。\n\n[0039]在一个实施方式中，显示装置100为微发光二极管显示装置。驱动基板10包括衬底11和依次层叠设置于衬底11上的驱动电路层12、钝化层13、走线层14、第二共晶焊接层15、发光二极管芯片16以及封装层17。其中，驱动电路层12、第二共晶焊接层15、发光二极管芯片16以及封装层17设置于显示区DA。钝化层13和走线层14从显示区DA延伸至绑定区BA。\n\n[0040]在显示区DA中，驱动电路层12设置于衬底11上。钝化层13覆盖驱动电路层12远离衬底11的一面。钝化层13之中开设有过孔13a。走线层14位于钝化层13远离驱动电路层12的一面。需要说明的是，走线层14并非形成为一整片，而是包括多个相互独立的走线图案。发光二极管芯片16设置于走线层14远离钝化层13的一侧。第二共晶焊接层15位于发光二极管芯片16与走线层14之间。第二共晶焊接层15电连接发光二极管芯片16和走线层14。走线层14通过开设于钝化层13中的过孔13a电连接于驱动电路层12。第二共晶焊接层15与第一共晶焊接层30可以采用相同材料，并在同一制程中形成。在一个实施方式中，走线层14通过开设于钝化层13中的过孔13a电连接于驱动电路层12的漏极。发光二极管芯片16经由走线层14电连接于驱动电路层12。封装层17覆盖于发光二极管芯片16远离走线层14的一面，对发光二极管芯片16进行封装。\n\n[0041]具体地，衬底11可以为玻璃基板，塑料基板等。\n\n[0042]在一个实施方式中，驱动电路层12包括驱动电路。驱动电路包括一个或多个薄膜晶体管。薄膜晶体管可以为底栅型薄膜晶体管。具体地，驱动电路层12包括依次层叠设置在衬底11上的栅极GE、栅极绝缘层GI、有源层CL、源极SE以及漏极DE。栅极GE设置于衬底11上。栅极绝缘层GI覆盖栅极GE以及衬底11。有源层CL位于栅极绝缘层GI远离衬底11的一面。有源层CL对应于栅极GE设置。源极SE和漏极DE位于有源层CL远离栅极GE的一面，并分别与有源层CL的两端连接。\n\n[0043]可以理解，本申请不限定驱动电路层12中所包含的薄膜晶体管的结构，其可以为顶栅型薄膜晶体管，也可以为底栅型薄膜晶体管，也可以为双栅极型薄膜晶体管。\n\n[0044]钝化层13的材料为有机材料。有机材料包含但不限于环氧树脂、聚甲基丙烯酸甲酯(polymethylmetacrylate，PMMA)、苯并环丁烯(benzocyclobutene，BCB)、聚酰亚胺、聚酯、聚二甲基硅氧烷(polydimethylsiloxane，PDMS)、四氟乙烯-全氟烷氧基乙烯基醚共聚物(polyfluoroalkoxy，PFA)中的一种或多种。在一个实施方式中，有机材料为PFA。\n\n[0045]走线层14的材料可以为金属材料。在一个实施方式中，走线层14的材料为铜。走线层14在显示区DA包括用于电连接驱动电路层12和发光二极管芯片16的走线图案。\n\n[0046]发光二极管芯片16可以为微发光二极管芯片。通过将单个微发光二极管芯片通过巨量转移技术与驱动基板10键合，以实现微发光二极管芯片与驱动基板10上的驱动电路层12连接。在其他实施方式中，发光二极管芯片16也可以为LED芯片或者mini-LED芯片。\n\n[0047]封装层17的材料可以为硅胶。\n\n[0048]在绑定区BA中，钝化层13设置于衬底11上。走线层14位于钝化层13远离衬底11的一侧。可以理解，钝化层13与衬底11之间还有其他膜层，在此不再赘述。\n\n[0049]走线层14包括第一绑定垫141。在一个实施方式中，钝化层13的靠近第一绑定垫141的表面具有凹凸结构131。第一绑定垫141覆盖于凹凸结构131上。由于走线层14的厚度较薄，第一绑定垫141覆盖于凹凸结构131上时，会形成与凹凸结构131相似的凹凸形状。通过在钝化层13上设置凹凸结构131，能够改变绑定区BA的地形，增加第一绑定垫141的表面积，从而与第一共晶焊接层30以及第二绑定垫21的接触面积，从增加驱动基板10与柔性绑定件20之间的结合力。\n\n[0050]请参考图2，图2为图1的凹凸结构的结构示意图。在一个实施方式中，凹凸结构131包括多个排列的凸起1311。多个排列的凸起1311在从靠近显示区DA到远离显示区DA的方向上。相邻两个凸起1311之间设置有凹陷1312。本申请不限定凹陷1312的形状，在本实施方式中，凹陷1312的在垂直于衬底11的上表面方向上的截面为三角形。请参考图3(a)至3(c)，图3(a)至3(c)为本申请的实施方式的凹凸结构的结构示意图。凸起1311在垂直于衬底11的上表面方向上的截面为矩形、梯形或者半圆形。在具体的实施方式中，凸起1311的形状可以为三棱柱、四棱柱、棱台或者半球。每一凹陷1312在垂直于衬底11的上表面方向上的深度H1小于或者等于钝化层13的厚度H2的二分之一。\n\n[0051]在一个具体的实施方式中，钝化层13的厚度H2为6微米至8微米。钝化层13的厚度H2具体可以为6微米、6.5微米、7微米、7.5微米至8微米。每一凹陷1312在垂直于衬底11的上表面方向上的深度H1范围为2微米至3.5微米。在一个实施方式中，每一凹陷1312在垂直于衬底11的上表面的方向上的深度H1为2微米、2.5微米、3微米或者3.5微米。在一个实施方式中，所述凹陷1312的宽度W范围是50微米至300微米。具体地，凹陷1312的宽度W可以是50微米、60微米、70微米、80微米、90微米、100微米、150微米、200微米、250微米或者300微米。如果凹陷1312深度H1过大，可能会穿透钝化层13，如果凹陷1312深度H1过小，第一绑定垫141与第二绑定垫21之间的拉拔力不足。因此，将凹陷1312深度H1设置在该范围内，即不会破坏钝化层13结构，能够保证第一绑定垫141与第二绑定垫21之间的拉拔力。\n\n[0052]第一绑定垫141靠近显示区DA的一端到远离显示区DA的一端的长度L范围是60微米至500微米。第一绑定垫141靠近显示区DA的一端到远离显示区DA的一端的长度L可以是60微米、70微米、80微米、90微米、100微米、200微米、300微米、400微米或者500微米。在使用ACF胶进行绑定的现有技术中，为了保证接触阻抗足够小，显示面板上的绑定垫(Pad)需要一定的长度，进一步导致边框变宽。相较于现有技术，本申请使用共晶焊接材料焊接第一绑定垫141和第二绑定垫21，金属与金属的熔合能够有效降低欧姆阻抗能，即使缩短绑定垫的长度也能保证足够小的接触阻抗。在能够保证足够小的接触阻抗的情况下，可以将第一绑定垫141的长度L缩短至60微米至500微米的范围内，从而达到窄边框的效果。\n\n[0053]柔性绑定件20弯折到驱动基板10的背面，从而实现窄边框。柔性绑定件20可以为覆晶薄膜(Chip On Film，COF)或柔性电路板(Flexible Printed Circuit，FPC)。显示装置100可以包括印刷电路板40(printed circuit board，PCB)。印刷电路板40连接于覆晶薄膜或柔性电路板远离驱动基板10的一端。在本实施方式中，柔性绑定件20包括覆晶薄膜。显示装置100还包括与覆晶薄膜绑定连接的柔性电路板(Flexible Printed Circuit，FPC)以及连接于柔性电路板远离驱动基板10的一端的印刷电路板40。在另一种实施方式中，柔性绑定件20为柔性电路板。柔性电路板远离驱动基板10的一端连接有印刷电路板40。\n\n[0054]在一个实施方式中，第二绑定垫21的材料与第一绑定垫141的材料均为金属材料。第一绑定垫141和第二绑定垫21均与第一共晶焊接层30直接接触。使用ACF胶进行绑定的现有技术中，为了防止绑定垫表面发生氧化，接触阻抗增大，通常需要在绑定垫的表面形成氧化铟锡层防氧化，导致成本变高。而本申请通过使金属材料制成的第一绑定垫141和第二绑定垫21与合金材料的第一共晶焊接层30直接接触，由于金属原子之间结合紧密，第一绑定垫141和第二绑定垫21不容易被氧化。因此，不需要在第一绑定垫141和第二绑定垫21上制作氧化铟锡防氧化层。由此，节约了制程，提高了成本。\n\n[0055]第一共晶焊接层30利用共晶焊接的方法形成于第一绑定垫141与第二绑定垫21之间。共晶焊接是一种低熔点的合金焊接，它是指在相对较低的温度下共晶焊料发生共晶物熔合的现象，共晶合金直接从固态变成液态，而不经过塑性阶段。共晶合金焊料是由两种或者两种以上的若干金属组成的合金。在一种实施方式中，共晶合金焊料可以为金锡合金(Au/Su)，质量比：10/90，熔点210℃。在其他实施方式中，共晶合金焊料还可以为银锡合金(Ag/Sn)、金锗合金(Au/Ge)、金硅合金(Au/Si)等。\n\n[0056]在一个实施方式中，第一共晶焊接层30靠近第一绑定垫141的表面具有与凹凸结构131相匹配的形状。\n\n[0057]在一个实施方式中，第一共晶焊接层30的远离显示区DA的端部E1位于第一绑定垫141的远离显示区DA的端部E2的内侧。第一共晶焊接层30的远离显示区DA的端部E1可以与第二绑定垫21的远离显示区DA的端部E2齐平。第一共晶焊接层30通过在第一绑定垫141或者第二绑定垫21上打印共晶合金焊料，形成共晶焊接图案，再加热完成共晶固化。因此，第一共晶焊接层30的长度和位置可以控制。将第一共晶焊接层30的远离显示区DA的端部E1设置为位于第一绑定垫141的远离显示区DA的端部E2的内侧，能够缩窄边框。\n\n[0058]请一并参考图1和参考图4，图4是本申请的第一共晶焊接层和第二共晶焊接层的形成的一个步骤的示意图。本申请显示装置的第一共晶焊接层30和第二共晶焊接层15可以通过以下方式形成：在第一绑定垫141和走线层14上印刷形成共晶合金焊料200，印刷的方式可以是钢网印刷；使第二绑定垫21与第一绑定垫141对位贴合并利用高温胶带进行简单定位，进行微发光二极管芯片15打件(Die Bond)；加热共晶合金焊料200，使共晶合金焊料200固化形成第一共晶焊接层30和第二共晶焊接层15。加热固化的方式可以是将驱动基板10与柔性绑定件20一起放入加热炉中进行加热，也可以是单独对共晶合金焊料200进行激光加热。\n\n[0059]本申请提供的显示装置包括驱动基板、柔性绑定件以及第一共晶焊接层。驱动基板包括显示区和绑定区。显示区与绑定区相邻设置。驱动基板包括第一绑定垫。第一绑定垫位于绑定区。柔性绑定件包括第二绑定垫。第二绑定垫与所述第一绑定垫相对设置。第一共晶焊接层焊接于所述第一绑定垫与所述第二绑定垫之间。第一共晶焊接层的材料为共晶合金焊料。本申请通过使用共晶焊接层焊接驱动基板与柔性绑定件，代替现有技术中使用的ACF胶，从而避免了ACF胶溢胶的问题，能够达到窄边框的效果。\n\n[0060]请参考图5，图5为本申请一个实施方式提供的拼接显示装置的结构示意图。本申请的拼接显示装置1包括多个显示装置100。多个显示装置100按照一定方式排列并拼接形成拼接显示装置1。其中，绑定区BA位于显示装置100的下边框处。本申请的拼接显示装置1使用如上所述的显示装置100，能够缩窄边框，并具有如上显示装置的所有技术效果。\n\n[0061]本申请还提供一种绑定结构200。请参考图6，图6为本申请提供的绑定结构的结构示意图。绑定结构200包括第一绑定件210、第二绑定件220以及共晶焊接层230。第一绑定件210包括第一绑定垫2141。第二绑定件220包括第二绑定垫221。第二绑定垫221与第一绑定垫2141相对设置。共晶焊接层230焊接于第一绑定垫2141与第二绑定垫221之间。共晶焊接层230的材料为共晶合金焊料。\n\n[0062]第一绑定件210可以为显示面板、COF、FPC或PCB。第二绑定件220也可以为显示面板、COF、FPC或PCB。在一个实施方式中，第一绑定件210为显示面板。第二绑定件220为COF。\n\n[0063]第一绑定件210可以包括衬底211和有机层213。有机层213设置于衬底211上，第一绑定垫2141设置于有机层213远离衬底211的一侧。有机层213的材料包含但不限于环氧树脂、聚甲基丙烯酸甲酯(polymethylmetacrylate，PMMA)、苯并环丁烯(benzocyclobutene，BCB)、聚酰亚胺、聚酯、聚二甲基硅氧烷(polydimethylsiloxane，PDMS)、四氟乙烯-全氟烷氧基乙烯基醚共聚物(polyfluoroalkoxy，PFA)中的一种或多种。在一个实施方式中，有机层的材料为PFA。\n\n[0064]有机层213的靠近第一绑定垫2141的表面具有凹凸结构2131。第一绑定垫2141覆盖于凹凸结构2131上。由于第一绑定垫2141的厚度较薄，第一绑定垫2141覆盖于凹凸结构2131上时，会形成与凹凸结构2131相似的凹凸形状。通过在有机层上设置凹凸结构2131，能够改变第一绑定垫2141的地形，增加第一绑定垫2141的表面积，从而与共晶焊接层以及第二绑定垫221的接触面积，从增加第一绑定件210与第二绑定件220之间的结合力。凹凸结构2131可以参考图1和图3(a)至图3(c)中的结构和尺寸，在此不再赘述。\n\n[0065]共晶合金焊料的材料为共晶合金焊料。在一种实施方式中，共晶合金焊料可以为金锡合金(Au/Su)，质量比：10/90，熔点210℃。在其他实施方式中，共晶合金焊料还可以为银锡合金(Ag/Sn)、金锗合金(Au/Ge)、金硅合金(Au/Si)等。\n\n[0066]本申请的绑定结构包括：第一绑定件、第二绑定件以及第一共晶焊接层。第一绑定件包括第一绑定垫。第二绑定件包括第二绑定垫。所述第二绑定垫与所述第一绑定垫相对设置。第一共晶焊接层焊接于所述第一绑定垫与所述第二绑定垫之间。所述第一共晶焊接层的材料为共晶合金焊料。本申请的绑定结构用于显示装置中能够达到窄边框的效果。\n\n[0067]以上对本申请实施方式提供了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施方式的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10904, 23958, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种转移方法、微型器件阵列及其制备方法。\n\n背景技术\n\n[0002]微型器件显示器相比OLED显示器具有可靠性高，色域高，亮度高，透明度高，PPI高；且封装要求低，更容易实现柔性及无缝拼接显示，是未来极具有发展潜力的未来显示器。\n\n[0003]图1为现有MicroLED转移方法流程图。如图1所示，现有MicroLED转移方法，转移步骤复杂，且需要使用到暂时基板、胶材和凸点stamp等多种材料，从而造成制作成本高昂。\n\n[0004]因此，亟需提供一种转移方法、微型器件阵列及其制备方法，以解决上述问题。\n\n发明内容\n\n[0005]为了解决上述问题，本发明提供一种转移方法、微型器件阵列及其制备方法，通过在微型器件和原始基板之间形成一弱化层，所述微型器件阵列及转移方法能将生成于原始基板上的微型器件的一步巨量的转移到一目标基板或驱动基板上，从而能避免采用暂时基板、转移胶材和凸点stamp。\n\n[0006]为了实现上述目的，本发明所述转移方法、微型器件阵列及其制备方法采取了以下技术方案。\n\n[0007]本发明提供一种微型器件的转移方法，所述转移方法包括：提供一微型器件阵列的步骤，所述微型器件阵列包括一承载基板和承载于所述承载基板上的至少一微型器件，并且所述微型器件与所述承载基板之间具有一弱化层，所述弱化层被配置成在一作用于所述微型器件阵列的外部力的作用下发生断裂，使得所述微型器件与所述承载基板分离；对位步骤：将所述微型器件阵列与一接收基板对位贴合；以及，转移步骤：所述转移步骤包括：形成用于使所述弱化层断裂的所述外部力，使得所述微型器件与所述承载基板分离,以及,将所述微型器件保持于所述接收基板上。\n\n[0008]作为一优选实施例，所述微型器件的转移方法包括以下步骤：S1、提供一微型器件阵列的步骤，所述微型器件阵列包括一承载基板和承载于所述承载基板上的至少一微型器件，并且所述微型器件与所述承载基板之间具有一弱化层，所述弱化层被配置成在一作用于所述微型器件阵列的外部力的作用下发生断裂，使得所述微型器件与所述承载基板分离；S2、对位步骤：将所述微型器件阵列与一接收基板对位贴合；以及，S3、转移步骤：所述转移步骤包括：形成用于使所述弱化层断裂的所述外部力，使得所述微型器件与所述承载基板分离,以及,将所述微型器件保持于所述接收基板上。\n\n[0009]进一步，所述转移方法还包括以下步骤：接合步骤：将被保持于所述接收基板的所述微型器件电性连接于所述接收基板上的步骤。\n\n[0010]进一步，所述接收基板的表面上具有键合凸起阵列，则：在所述对位步骤中：使所述微型器件的电极对准所述键合凸起；在所述转移步骤中：使所述微型器件的电极黏附于所述键合凸起上，以将所述微型器件保持于所述接收基板上；在所述接合步骤中：将所述微型器件的电极焊接于所述键合凸起上。\n\n[0011]本发明提供一种微型器件阵列，所述微型器件阵列包括承载基板和承载于所述承载基板上的至少一微型器件，其中：所述微型器件与所述承载基板之间具有一弱化层，所述弱化层被配置成在一作用于所述微型器件阵列的外部力的作用下发生断裂，使得所述微型器件与所述承载基板分离。\n\n[0012]进一步，所述弱化层包括空洞部和用于支撑部和由所述支撑部定义的空洞部；所述支撑部被配置成在所述作用于所述微型器件阵列的外部力的作用下发生断裂，使得所述微型器件与所述承载基板分离。\n\n[0013]进一步，所述支撑部呈网络状结构、阵列排布的条形状结构、十字型结构或矩形框结构。\n\n[0014]进一步，所述微型器件包括一缓冲层，所述缓冲层具有与所述承载基板接触的第一表面；所述第一表面具有抵接于所述承载基板的凸起结构和由所述凸起结构围设的开口阵列；所述开口阵列构成所述空洞部，所述凸起结构构成所述支撑部，所述第一表面形成有所述弱化层。\n\n[0015]进一步，所述承载基板在其与所述缓冲层接触的表面上具有一绝缘层；所述弱化层的所述支撑部贯穿所述绝缘层的厚度以抵接于所述承载基板，所述弱化层的所述空洞部在所述承载基板的正投影覆盖所述绝缘层。\n\n[0016]进一步，所述微型器件为微型LED器件，所述微型LED器件包括：依次层叠于所述缓冲层的背离所述承载基板的表面上的第一半导体层、多量子阱层以及第二半导体层；位于所述第一半导体层背离所述缓冲层的表面上的第一电极；以及，位于所述第二半导体层背离所述缓冲层的表面上的第二电极。\n\n[0017]本发明还提供一种微型器件阵列的制备方法，所述微型器件阵列包括承载基板和设置于所述承载基板上的至少一微型器件，其特征在于，所述制备方法包括：在一承载基板上制备一图形化衬底层的步骤，所述图形化衬底层的外表面具有一层图形化牺牲层；在制备有所述图形化衬底层的所述承载基板上制备用于制备所述微型器件的多层磊晶层的步骤，其中所述磊晶层结构包括依次层叠的缓冲层、第一半导体层、多量子阱层及第二半导体层，并且所述缓冲层的第一表面覆盖于所述图形化衬底层和所述承载基板上；对所述多层磊晶层进行蚀刻处理，以暴露所述多量子阱层；以及，对所述图形化牺牲层进行蚀刻处理，以使得所述缓冲层的在所述第一表面上形成所述弱化层。\n\n[0018]进一步，所述制备方法还包括：在所述多层磊晶层上制作第一电极和第二电极以获得微型器件的步骤，其中：所述第一电极与所述第一半导体层接触，所述第二电极与所述第二半导体层接触。\n\n[0019]进一步，以以下方法获得所述图形化衬底层：在所述承载基板上制备一含硅材料层并图形化；以及，对形成于所述承载基板上的含硅材料层进行氧化处理以得到所述图形化衬底层。\n\n[0020]本发明所述转移方法、微型器件阵列及其制备方法具有以下有益效果：\n\n[0021]本发明微型器件阵列通过在微型器件与承载基板之间形成弱化层，能通过利用作用于微型器件阵列上的外部力使微型器件与承载基板分离，从而能简化现有微型器件的转移或分离步骤，还能减少使用暂时基板、转移胶材或凸点stamp，从而能降低转移成本。\n\n[0022]本发明所述转移方法通过在微型器件和承载基板之间设置弱化层，能通过微型器件阵列与TFT基板的对位和施压，将多个微型器件直接转移到一TFT基板，能简化当前微型器件转移方法的步骤和制程，提高转移效率，还能减少使用暂时基板、转移胶材或凸点stamp，从而能降低转移成本。\n\n[0023]本发明所述微型器件阵列的制备方法通过图形化衬底层的制备和蚀刻，能在制备微型器件的制程中形成弱化层，以能得到本发明所述微型器件阵列，同时还具有节约制程的优点。\n\n附图说明\n\n[0024]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0025]图1为现有微型器件转移方法的流程图。\n\n[0026]图2为本发明所述微型器件阵列的结构示意图。\n\n[0027]图3A-图3D为本发明所述微型器件的转移方法的转移过程的示意图。\n\n[0028]图4A-图4C为所述微型器件阵列的制备方法的一实施例的工艺流程示意图。\n\n具体实施方式\n\n[0029]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0030]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0031]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0032]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0033]下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0034]图2为本发明所述微型器件阵列的结构示意图。如图2所示，本发明提供一种微型器件阵列，所述微型器件阵列包括一承载基板100和位于所述承载基板100上的至少一微型器件200。\n\n[0035]如图2所示，每一所述微型器件200与所述承载基板100之间具有一弱化层201，所述弱化层201被配置成在一作用于所述微型器件阵列的外部力的作用下发生断裂，使得所述微型器件200与所述承载基板100分离。\n\n[0036]至此，本发明所述微型器件阵列通过在所述微型器件阵列上施加或产生所述外部力F，能使弱化层201断裂，从而使所述微型器件200与所述承载基板100分离。\n\n[0037]具体地，所述承载基板100为用于制备所述微型器件200的生长基板(或者说，原始基板)。其中，所述生长基板是微型器件200被制造或生长在其上的基板，而不是微型器件200已被转移到其上的另一个临时基板或中间基板上。即，所述微型器件200直接在所述承载基板100制备得到。例如，所述微型器件阵列为通过直接在所述承载基板100上形成用于构成所述微型器件200的各磊晶层并图形化后获得。\n\n[0038]很显然，本发明所述微型器件阵列能用于实施将生成于生长基板(原始基板)上的微型器件200直接转移到一接收基板上。该接收基板可以为一阵列基板，或者其他类型的驱动基板。\n\n[0039]需要说明的是，本发明中并未限定所述承载基板100的具体材质，所述原始基板10可以为AlO、SiC、GaAs、Si、AlGaInP等材料。例如，在本实施例中，所述承载基板100可选为外延质量好的蓝宝石衬底。\n\n[0040]如图2所示，所述弱化层201包括支撑部2011和由所述支撑部2011定义的空洞部2012，其中所述支撑部2011被配置成在所述作用于所述微型器件阵列的外部力的作用下发生断裂，使得所述微型器件200与所述承载基板100分离。\n\n[0041]具体地，所述支撑部2011，可以为但不限于，网络结构、阵列排布的条形结构、十字型结构或矩形框结构。例如，在本实施例中，所述支撑部2011为网络结构。在其他实施例中，所述支撑部2011可以为阵列排布的长条形结构。\n\n[0042]也就是说，本发明并未对所述支撑部2011和所述空洞部2012的具体形状、尺寸或分布进行限制。只要空洞部2012和的支撑部2011配置合理，能使所述弱化层201在所述外部力F的作用下断裂，保障所述微型器件200能与所述承载基板100分离即可。\n\n[0043]具体地，所述弱化层201可以为所述微型器件200或所述承载基板100的某一层或者该层的部分厚度区域，也可以为所述承载基板100的某一层或该层的部分厚度区域。本发明对此并不做任何限定。例如，在本实施例中，所述弱化层201由所述微型器件200的缓冲层210形成。\n\n[0044]如图2所示，所述微型器件200具有与所述承载基板100接触的缓冲层210，所述缓冲层210朝向所述承载基板100的表面上形成有所述缓冲层210。所述弱化层201形成于所述缓冲层210的与所述承载基板100接触的表面上。或者说，所述缓冲层210与所述承载基板100接触的表面形成有弱化层201。\n\n[0045]在具体实施时，所述缓冲层210由GaN或AlN制成，所述保护层280主要为SiO、SiN、SiONx、AlO中的任意一种。\n\n[0046]如图2所示，所述承载基板100在其与所述缓冲层210接触的表面上具有一绝缘层110。所述弱化层201的所述支撑部2011贯穿所述绝缘层110的厚度以抵接于所述承载基板100，所述弱化层201的所述空洞部2012在所述承载基板100的正投影覆盖所述绝缘层110。\n\n[0047]在具体实施时，所述绝缘层110可以为含硅材料层。\n\n[0048]如图2所示，所述微型器件200为微型发光二极管(Micro LED)。所述微型器件200还包括第一半导体层220、多量子阱层230、第二半导体层240、扩散层250、第一电极270、第二电极260以保护层280。\n\n[0049]请继续参考图2，所述第一半导体层220设置所述缓冲层210上并覆盖所述缓冲层210；所述第一电极270和所述多量子阱层230间隔设置于所述第一半导体层220上；所述第二半导体层240设置于所述多量子阱层230上并覆盖所述多量子阱层230，所述第二电极260设置于所述多量子阱层230上；所述保护层280设置于所述多量子阱层230并覆盖所述第一电极270、所述第二电极260、所述第一半导体层220、所述第二半导体层240以及所述多量子阱层230；并且，所述保护层280上形成有第一过孔和第二过孔，所述第一电极270和所述第二电极260分别由所述第一过孔和所述第二过孔暴露。\n\n[0050]在具体实施时，所述第一电极270为N电极或P电极，所述第二电极260相应地为P电极或N电极。\n\n[0051]本发明并未限定所述第一半导体层220和第二半导体层240的具体材质，第一半导体层220可以是N型GaN，也可以是P型GaN，或者其他GaAs材质或GaP材质等。对应的，第二半导体层240可以是P型GaN，也可以是N型GaN，或者其他GaAs材质或GaP材质等。本实施例中为方便说明，可选的，第一半导体层220为N型GaN，第二半导体层240为P型GaN。\n\n[0052]为了提高导电性能，提高发光效率，本实施例中所述微型器件200还包括扩散层250，所述扩散层250设置于所述第二半导体层240和所述第二电极260之间并覆盖所述第二半导体层240。所述扩散层250采用透明或半透明导电材料，例如但不限于，ITO。\n\n[0053]应当理解：本发明的所述微型器件200并不受限于微型发光二极管(Micro LED)，并且某些实施例也可适用于其他微型半导体器件，这种微型半导体器件以这种方式被设计以便以受控方式执行预定电子功能(例如，二极管、晶体管、集成电路)或光子功能(LED、激光器)。\n\n[0054]本发明也并未限定所述Micro LED的具体结构。例如在本实施例中，所述MicroLED为同侧电极结构。在其他实施例中，所述Micro LED还可以为垂直电极结构。\n\n[0055]具体地，所述承载基板100为用于制备所述微型器件200的原始生成基板。其中，原始生成基板是微型器件200被制造或生长在其上的基板，而不是微型器件200已被转移到其上的另一个临时基板或临时基底。即，所述微型器件200直接在所述承载基板100制备得到。例如，所述微型器件阵列可以通过直接在所述承载基板100上形成用于构成所述微型器件200的各膜层并图形化后获得。\n\n[0056]如图2所示,所述微型器件200设置于所述承载基板100上，并且所述微型器件200与所述承载基板100之间具有一弱化层201。其中，所述弱化层201包括支撑部2011和由所述支撑部2011定义的空洞部2012，并且所述支撑部2011被配置成当具有作用于所述微型器件阵列的外部力时发生断裂，使得所述微型器件200与所述承载基板100分离。\n\n[0057]具体地，所述支撑部2011，可以为但不限于，网络结构、阵列排布的条形结构、十字型结构或矩形框结构。例如，在本实施例中，所述支撑部2011为网络结构。在其他实施例中，所述支撑部2011可以为阵列排布的长条形结构。\n\n[0058]具体地，所述微型器件200为微型LED器件，即微型发光二极管(Micro LED)。但应当理解，本发明的实施例不受此限制，并且某些实施例也可适用于其他微型半导体器件，这种微型半导体器件以这种方式被设计以便以受控方式执行预定电子功能(例如，二极管、晶体管、集成电路)或光子功能(LED、激光器)。\n\n[0059]更进一步地，本发明并未限定所述Micro LED的具体结构，例如在本实施例中，所述Micro LED为同侧电极结构。在其他实施例中，所述Micro LED还可以为垂直电极结构。\n\n[0060]图3A-图3D为本发明所述微型器件的转移方法的转移过程的示意图。如图3A-图3D所示，所述转移方法包括以下步骤：\n\n[0061]提供一微型器件阵列的步骤，在所述微型器件阵列中：每一微型器件与承载基板之间具有一弱化层，所述弱化层被配置成在一作用于所述微型器件阵列的外部力的作用下发生断裂，使得所述微型器件与所述承载基板分离；\n\n[0062]对位步骤：将所述微型器件阵列与一接收基板对位贴合；以及，\n\n[0063]转移步骤：所述转移步骤包括：形成用于使所述弱化层断裂的所述外部力，使得所述微型器件与所述承载基板分离,以及,将所述微型器件保持于所述接收基板上。\n\n[0064]很显然地，本发明所述微型器件的转移方法通过采用本发明所述微型器件阵列，能实现对所述微型器件200的一步巨量转移，进而能简化当前微型器件转移方法的步骤和制程，提高转移效率；同时，还能减少使用暂时基板或临时基板、转移胶材或凸点stamp，从而能降低转移成本。\n\n[0065]同时，需要指出的是，本发明并未限定所述微型器件阵列的类型、具体结构或制作工艺，也未限定所述微型器件200在所述承载基板100上的排列布置方式。也就是说，在具体实施时，只要微型器件阵列的具体配置方式适当，能保证所述弱化层201在一外部力的作用下发生断裂，确保所述微型器件200与所述承载基板100分离即可。\n\n[0066]具体地，所述接收基板300的表面上具有阵列排布的键合凸起310，则：在所述对位步骤中，使所述微型器件200的电极对准所述键合凸起310；在所述转移步骤中，使所述微型器件200的电极黏附于所述键合凸起310上，以将所述微型器件200保持于所述接收基板300上。\n\n[0067]具体地，所述接收基板300为一阵列基板。当所述接收基板300为一阵列基板时，所述转移方法还包括以下步骤：接合步骤：将被保持于所述接收基板300的所述微型器件200电性连接于所述接收基板300上的步骤。例如，在所述接合步骤中：将所述微型器件200的电极焊接于所述键合凸起310上。\n\n[0068]作为一优选实施例，本发明所述转移方法能用于将生长于一原始基板或一生长基板上的微型器件200直接转移至一阵列基板上。\n\n[0069]如图3A-图3D所示，在本实施例中，所述转移方法包括以下步骤：\n\n[0070]S1、提供一微型器件阵列的步骤，在所述微型器件阵列中：每一微型器件与承载基板之间具有一弱化层，所述弱化层被配置成在一作用于所述微型器件阵列的外部力的作用下发生断裂，使得所述微型器件与所述承载基板分离；\n\n[0071]S2、对位步骤：将所述微型器件阵列与一接收基板对位贴合；以及，\n\n[0072]S3、转移步骤：所述转移步骤包括：形成用于使所述弱化层断裂的所述外部力，使得所述微型器件与所述承载基板分离,以及,将所述微型器件保持于所述接收基板上；以及，\n\n[0073]S4、接合步骤：将被保持于所述接收基板的所述微型器件电性连接于所述接收基板上的步骤。\n\n[0074]如图3A所示，获得本发明所述微型器件阵列。如图3A所示，在本实施例中，所述微型器件阵列与图2所示微型器件阵列的区别在于所述微型器件200的数目不同。关于图3A所示微型器件阵列的具体描述，请参考上文，此处不再赘述。可见，本发明所述微型器件阵列能用于通过本发明所述转移方法进行转移。\n\n[0075]如图3B所示，将所述微型器件阵列与一接收基板300对准，并使待转移的所述微型器件200接触所述接收基板300。\n\n[0076]例如，如图3B所示，在本实施例中，所述接收基板300为一阵列基板，所述阵列基板的表面上具有阵列排布的键合凸起310，则使所述微型器件200的第一电极270和第二电极260分别对准所述键合凸起310。\n\n[0077]如图3C所示，通过形成用于使所述弱化层201断裂的所述外部力F，使得所述微型器件200与所述承载基板100分离；并将所述微型器件200保持于所述接收基板300上。\n\n[0078]在具体实施时，可以先形成所外部力F，使得所述微型器件200脱离所述承载基板100，然后将由所述承载基板100脱离的所述微型器件200保持于所述接收基板300上。也可以为，先使得所述微型器件200被保持于所述接收基板300上；然后再形成所外部力F，使得所述微型器件200脱离所述承载基板100。\n\n[0079]很显然地，通过在所述微型器件200和所述承载基板100之间形成弱化层201，则只需要采用外部力F压断支撑部2011便可实现微型器件200的巨量转移，工艺简单，可有效降低工艺成本。\n\n[0080]优选地，在所述转移步骤S2中，由定位于所述接收基板300与所述微型器件200之间的黏性材料层将由所述承载基板100脱离的所述微型器件200保持于所述接收基板300上。例如，通过在微型器件200的电极或所述接收基板300上形成一黏性材料层，能将所述微型器件200黏附于所述接收基板300上。\n\n[0081]在具体实施时，该外部力F可以直接施加于所述微型器件阵列上或通过接收基板300施加于所述微型器件阵列上。\n\n[0082]优选地，如图3C所示，在本实施例中，所述外部力F直接施加于所述微型器件阵列上。\n\n[0083]如图3D所示，在所述步骤S4中，将上述被转移至所述接收基板300上的微型器件200键合并电连接于所述接收基板300上。\n\n[0084]在具体实施时，可以通过热压工艺将所述微型器件200的电极焊接于所述接收基板300上。\n\n[0085]本发明还提供一种微型器件阵列的制备方法，所述微型器件阵列包括承载基板和设置于所述承载基板上的至少一微型器件，所述制备方法包括：\n\n[0086]在所述微型器件和所述承载基板之间制备一弱化层的步骤，其中所述弱化层被配置成在一作用于所述微型器件阵列的外部力的作用下发生断裂，使得所述微型器件与所述承载基板分离。\n\n[0087]很显然地，本发明所述微型器件阵列能采用本发明所述微型器件阵列的制备方法制备。\n\n[0088]图4A-图4C为所述微型器件阵列的制备方法的一实施例的工艺流程示意图。如图4A-图4C，在本实施例中，所述微型器件阵列的制备方法包括以下步骤：\n\n[0089]S41、在一承载基板上制备一图形化衬底层的步骤，所述图形化衬底层的外表面具有一层图形化牺牲层；\n\n[0090]S42、在制备有所述图形化衬底层的所述承载基板上制备用于制备所述微型器件的多层磊晶层的步骤，其中所述磊晶层结构包括依次层叠的缓冲层、第一半导体层、多量子阱层及第二半导体层，并且所述缓冲层的第一表面覆盖于所述图形化衬底层和所述承载基板上；\n\n[0091]S43、对所述多层磊晶层进行蚀刻处理，以暴露所述多量子阱层；\n\n[0092]S44、对所述图形化牺牲层进行蚀刻处理，以使得所述缓冲层的在所述第一表面上形成所述弱化层；以及，\n\n[0093]S45、在所述多层磊晶层上制作第一电极和第二电极以获得微型器件的步骤，其中：所述第一电极与所述第一半导体层接触，所述第二电极与所述第二半导体层接触。\n\n[0094]如图4A所示，通过所述步骤S41,在所述承载基板100上得到一层图形化衬底层101，所述图形化衬底层101用于后续形成所述弱化层201。\n\n[0095]具体地，所述图形化衬底层101包括图案区域和暴露所述承载基板100的镂空区域。在具体实施时，可以通过控制所述图形化衬底101的镂空区域和图案区域的形状、尺寸或图案，以控制所述后续弱化层201的支撑部2011和空洞部2012的形状或尺寸。\n\n[0096]例如，如图4A所示，在本实施例中，所述图形化衬底层101的所述图案区域包括阵列排布的多个凸起，所述凸起的可以为棱台型、三棱柱型或四棱柱型。在其他实施例中，所述凸起还可以为其他规则或不规则的多棱柱型，本发明对此并不做任何限定。\n\n[0097]具体地，所述图形化衬底层101可以通过以下步骤获得：首先在所述衬底承载基板100上制备一含硅材料层并对所述含硅材料层进行图形化处理，得到图形化含硅材料层11；然后，对所述图形化含硅材料层11进行氧化处理得到所述图形化衬底层101。\n\n[0098]如图4A所示，所述图形化衬底层101包括设置于所述承载基板100上的蚀刻停止层110和包覆所述蚀刻停止层110的牺牲层111。其中，所述牺牲层111在后续的加工制中被能被去除，以用于形成所述弱化层201的空洞部2012，所述蚀刻停止层110对应形成所述绝缘层110。\n\n[0099]例如，在本实施例中，所述含硅材料层为一硅层，所述蚀刻停止层110相对应为一硅层，所述牺牲层111为SiO2。\n\n[0100]如图4B所示，在形成有所述图形化衬底层101的承载基板100上制备多层磊晶层,所述多层磊晶层依次包括缓冲层210、第一半导体层220、多量子阱层230以及第二半导体层240。\n\n[0101]如图4A所示，所述缓冲层210形成于所述图形化衬底层101上,并且所述缓冲层210的第一表面覆盖于所述图形化衬底层101和所述承载基板100上。\n\n[0102]详细来讲，所述缓冲层210的第一表面的部分区域填充于所述图形化衬底层101的镂空区域内，形成与所述承载基板100接触的支撑部2011；所述缓冲层210第一表面的其它区域覆盖于所述蚀刻停止层110的外表面上，用于定义所述空洞部2012。\n\n[0103]如图4C所示，在所述步骤S13中，通过对所述多层磊晶层进行蚀刻，以暴露出所述第一半导体层220，以便于后续形成与第一半导体层220接触的第一电极270。\n\n[0104]如图4C所示，在所述步骤S13中，去除所述牺牲层111后，所述牺牲层111所对应的区域形成由所述缓冲层210的第一表面围设的空洞，即为所述弱化层201的空洞部2012。\n\n[0105]在具体实施时，可以采用干蚀刻或湿蚀刻处理。在本实施例中，采用ICP蚀刻处理工艺。\n\n[0106]在所述步骤S44中，制备第一电极270和第二电极260，所述第一电极270与所述第一半导体层220接触，所述第二电极260与所述第二半导体层240接触。\n\n[0107]具体地，所述微型器件阵列的制备方法还包括以下步骤：\n\n[0108]在制备第二电极和所述多层磊晶层之间制备扩散层的步骤；以及，\n\n[0109]制备保护层的步骤，所述保护层覆盖所述多层磊晶层和所述承载基板并具有暴露第一电极和第二电极的第一过孔和第二过孔。在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0110]以上对本发明实施例所提供的一种转移方法、微型器件阵列及其制备方法进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种转移方法、微型器件阵列及其制备方法。\n\n背景技术\n\n[0002]微型器件显示器相比OLED显示器具有可靠性高，色域高，亮度高，透明度高，PPI高；且封装要求低，更容易实现柔性及无缝拼接显示，是未来极具有发展潜力的未来显示器。\n\n[0003]图1为现有MicroLED转移方法流程图。如图1所示，现有MicroLED转移方法，转移步骤复杂，且需要使用到暂时基板、胶材和凸点stamp等多种材料，从而造成制作成本高昂。\n\n[0004]因此，亟需提供一种转移方法、微型器件阵列及其制备方法，以解决上述问题。\n\n发明内容\n\n[0005]为了解决上述问题，本发明提供一种转移方法、微型器件阵列及其制备方法，通过在微型器件和原始基板之间形成一弱化层，所述微型器件阵列及转移方法能将生成于原始基板上的微型器件的一步巨量的转移到一目标基板或驱动基板上，从而能避免采用暂时基板、转移胶材和凸点stamp。\n\n[0006]为了实现上述目的，本发明所述转移方法、微型器件阵列及其制备方法采取了以下技术方案。\n\n[0007]本发明提供一种微型器件的转移方法，所述转移方法包括：提供一微型器件阵列的步骤，所述微型器件阵列包括一承载基板和承载于所述承载基板上的至少一微型器件，并且所述微型器件与所述承载基板之间具有一弱化层，所述弱化层被配置成在一作用于所述微型器件阵列的外部力的作用下发生断裂，使得所述微型器件与所述承载基板分离；对位步骤：将所述微型器件阵列与一接收基板对位贴合；以及，转移步骤：所述转移步骤包括：形成用于使所述弱化层断裂的所述外部力，使得所述微型器件与所述承载基板分离,以及,将所述微型器件保持于所述接收基板上。\n\n[0008]作为一优选实施例，所述微型器件的转移方法包括以下步骤：S1、提供一微型器件阵列的步骤，所述微型器件阵列包括一承载基板和承载于所述承载基板上的至少一微型器件，并且所述微型器件与所述承载基板之间具有一弱化层，所述弱化层被配置成在一作用于所述微型器件阵列的外部力的作用下发生断裂，使得所述微型器件与所述承载基板分离；S2、对位步骤：将所述微型器件阵列与一接收基板对位贴合；以及，S3、转移步骤：所述转移步骤包括：形成用于使所述弱化层断裂的所述外部力，使得所述微型器件与所述承载基板分离,以及,将所述微型器件保持于所述接收基板上。\n\n[0009]进一步，所述转移方法还包括以下步骤：接合步骤：将被保持于所述接收基板的所述微型器件电性连接于所述接收基板上的步骤。\n\n[0010]进一步，所述接收基板的表面上具有键合凸起阵列，则：在所述对位步骤中：使所述微型器件的电极对准所述键合凸起；在所述转移步骤中：使所述微型器件的电极黏附于所述键合凸起上，以将所述微型器件保持于所述接收基板上；在所述接合步骤中：将所述微型器件的电极焊接于所述键合凸起上。\n\n[0011]本发明提供一种微型器件阵列，所述微型器件阵列包括承载基板和承载于所述承载基板上的至少一微型器件，其中：所述微型器件与所述承载基板之间具有一弱化层，所述弱化层被配置成在一作用于所述微型器件阵列的外部力的作用下发生断裂，使得所述微型器件与所述承载基板分离。\n\n[0012]进一步，所述弱化层包括空洞部和用于支撑部和由所述支撑部定义的空洞部；所述支撑部被配置成在所述作用于所述微型器件阵列的外部力的作用下发生断裂，使得所述微型器件与所述承载基板分离。\n\n[0013]进一步，所述支撑部呈网络状结构、阵列排布的条形状结构、十字型结构或矩形框结构。\n\n[0014]进一步，所述微型器件包括一缓冲层，所述缓冲层具有与所述承载基板接触的第一表面；所述第一表面具有抵接于所述承载基板的凸起结构和由所述凸起结构围设的开口阵列；所述开口阵列构成所述空洞部，所述凸起结构构成所述支撑部，所述第一表面形成有所述弱化层。\n\n[0015]进一步，所述承载基板在其与所述缓冲层接触的表面上具有一绝缘层；所述弱化层的所述支撑部贯穿所述绝缘层的厚度以抵接于所述承载基板，所述弱化层的所述空洞部在所述承载基板的正投影覆盖所述绝缘层。\n\n[0016]进一步，所述微型器件为微型LED器件，所述微型LED器件包括：依次层叠于所述缓冲层的背离所述承载基板的表面上的第一半导体层、多量子阱层以及第二半导体层；位于所述第一半导体层背离所述缓冲层的表面上的第一电极；以及，位于所述第二半导体层背离所述缓冲层的表面上的第二电极。\n\n[0017]本发明还提供一种微型器件阵列的制备方法，所述微型器件阵列包括承载基板和设置于所述承载基板上的至少一微型器件，其特征在于，所述制备方法包括：在一承载基板上制备一图形化衬底层的步骤，所述图形化衬底层的外表面具有一层图形化牺牲层；在制备有所述图形化衬底层的所述承载基板上制备用于制备所述微型器件的多层磊晶层的步骤，其中所述磊晶层结构包括依次层叠的缓冲层、第一半导体层、多量子阱层及第二半导体层，并且所述缓冲层的第一表面覆盖于所述图形化衬底层和所述承载基板上；对所述多层磊晶层进行蚀刻处理，以暴露所述多量子阱层；以及，对所述图形化牺牲层进行蚀刻处理，以使得所述缓冲层的在所述第一表面上形成所述弱化层。\n\n[0018]进一步，所述制备方法还包括：在所述多层磊晶层上制作第一电极和第二电极以获得微型器件的步骤，其中：所述第一电极与所述第一半导体层接触，所述第二电极与所述第二半导体层接触。\n\n[0019]进一步，以以下方法获得所述图形化衬底层：在所述承载基板上制备一含硅材料层并图形化；以及，对形成于所述承载基板上的含硅材料层进行氧化处理以得到所述图形化衬底层。\n\n[0020]本发明所述转移方法、微型器件阵列及其制备方法具有以下有益效果：\n\n[0021]本发明微型器件阵列通过在微型器件与承载基板之间形成弱化层，能通过利用作用于微型器件阵列上的外部力使微型器件与承载基板分离，从而能简化现有微型器件的转移或分离步骤，还能减少使用暂时基板、转移胶材或凸点stamp，从而能降低转移成本。\n\n[0022]本发明所述转移方法通过在微型器件和承载基板之间设置弱化层，能通过微型器件阵列与TFT基板的对位和施压，将多个微型器件直接转移到一TFT基板，能简化当前微型器件转移方法的步骤和制程，提高转移效率，还能减少使用暂时基板、转移胶材或凸点stamp，从而能降低转移成本。\n\n[0023]本发明所述微型器件阵列的制备方法通过图形化衬底层的制备和蚀刻，能在制备微型器件的制程中形成弱化层，以能得到本发明所述微型器件阵列，同时还具有节约制程的优点。\n\n附图说明\n\n[0024]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0025]图1为现有微型器件转移方法的流程图。\n\n[0026]图2为本发明所述微型器件阵列的结构示意图。\n\n[0027]图3A-图3D为本发明所述微型器件的转移方法的转移过程的示意图。\n\n[0028]图4A-图4C为所述微型器件阵列的制备方法的一实施例的工艺流程示意图。\n\n具体实施方式\n\n[0029]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0030]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0031]在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。\n\n[0032]在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0033]下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0034]图2为本发明所述微型器件阵列的结构示意图。如图2所示，本发明提供一种微型器件阵列，所述微型器件阵列包括一承载基板100和位于所述承载基板100上的至少一微型器件200。\n\n[0035]如图2所示，每一所述微型器件200与所述承载基板100之间具有一弱化层201，所述弱化层201被配置成在一作用于所述微型器件阵列的外部力的作用下发生断裂，使得所述微型器件200与所述承载基板100分离。\n\n[0036]至此，本发明所述微型器件阵列通过在所述微型器件阵列上施加或产生所述外部力F，能使弱化层201断裂，从而使所述微型器件200与所述承载基板100分离。\n\n[0037]具体地，所述承载基板100为用于制备所述微型器件200的生长基板(或者说，原始基板)。其中，所述生长基板是微型器件200被制造或生长在其上的基板，而不是微型器件200已被转移到其上的另一个临时基板或中间基板上。即，所述微型器件200直接在所述承载基板100制备得到。例如，所述微型器件阵列为通过直接在所述承载基板100上形成用于构成所述微型器件200的各磊晶层并图形化后获得。\n\n[0038]很显然，本发明所述微型器件阵列能用于实施将生成于生长基板(原始基板)上的微型器件200直接转移到一接收基板上。该接收基板可以为一阵列基板，或者其他类型的驱动基板。\n\n[0039]需要说明的是，本发明中并未限定所述承载基板100的具体材质，所述原始基板10可以为AlO、SiC、GaAs、Si、AlGaInP等材料。例如，在本实施例中，所述承载基板100可选为外延质量好的蓝宝石衬底。\n\n[0040]如图2所示，所述弱化层201包括支撑部2011和由所述支撑部2011定义的空洞部2012，其中所述支撑部2011被配置成在所述作用于所述微型器件阵列的外部力的作用下发生断裂，使得所述微型器件200与所述承载基板100分离。\n\n[0041]具体地，所述支撑部2011，可以为但不限于，网络结构、阵列排布的条形结构、十字型结构或矩形框结构。例如，在本实施例中，所述支撑部2011为网络结构。在其他实施例中，所述支撑部2011可以为阵列排布的长条形结构。\n\n[0042]也就是说，本发明并未对所述支撑部2011和所述空洞部2012的具体形状、尺寸或分布进行限制。只要空洞部2012和的支撑部2011配置合理，能使所述弱化层201在所述外部力F的作用下断裂，保障所述微型器件200能与所述承载基板100分离即可。\n\n[0043]具体地，所述弱化层201可以为所述微型器件200或所述承载基板100的某一层或者该层的部分厚度区域，也可以为所述承载基板100的某一层或该层的部分厚度区域。本发明对此并不做任何限定。例如，在本实施例中，所述弱化层201由所述微型器件200的缓冲层210形成。\n\n[0044]如图2所示，所述微型器件200具有与所述承载基板100接触的缓冲层210，所述缓冲层210朝向所述承载基板100的表面上形成有所述缓冲层210。所述弱化层201形成于所述缓冲层210的与所述承载基板100接触的表面上。或者说，所述缓冲层210与所述承载基板100接触的表面形成有弱化层201。\n\n[0045]在具体实施时，所述缓冲层210由GaN或AlN制成，所述保护层280主要为SiO、SiN、SiONx、AlO中的任意一种。\n\n[0046]如图2所示，所述承载基板100在其与所述缓冲层210接触的表面上具有一绝缘层110。所述弱化层201的所述支撑部2011贯穿所述绝缘层110的厚度以抵接于所述承载基板100，所述弱化层201的所述空洞部2012在所述承载基板100的正投影覆盖所述绝缘层110。\n\n[0047]在具体实施时，所述绝缘层110可以为含硅材料层。\n\n[0048]如图2所示，所述微型器件200为微型发光二极管(Micro LED)。所述微型器件200还包括第一半导体层220、多量子阱层230、第二半导体层240、扩散层250、第一电极270、第二电极260以保护层280。\n\n[0049]请继续参考图2，所述第一半导体层220设置所述缓冲层210上并覆盖所述缓冲层210；所述第一电极270和所述多量子阱层230间隔设置于所述第一半导体层220上；所述第二半导体层240设置于所述多量子阱层230上并覆盖所述多量子阱层230，所述第二电极260设置于所述多量子阱层230上；所述保护层280设置于所述多量子阱层230并覆盖所述第一电极270、所述第二电极260、所述第一半导体层220、所述第二半导体层240以及所述多量子阱层230；并且，所述保护层280上形成有第一过孔和第二过孔，所述第一电极270和所述第二电极260分别由所述第一过孔和所述第二过孔暴露。\n\n[0050]在具体实施时，所述第一电极270为N电极或P电极，所述第二电极260相应地为P电极或N电极。\n\n[0051]本发明并未限定所述第一半导体层220和第二半导体层240的具体材质，第一半导体层220可以是N型GaN，也可以是P型GaN，或者其他GaAs材质或GaP材质等。对应的，第二半导体层240可以是P型GaN，也可以是N型GaN，或者其他GaAs材质或GaP材质等。本实施例中为方便说明，可选的，第一半导体层220为N型GaN，第二半导体层240为P型GaN。\n\n[0052]为了提高导电性能，提高发光效率，本实施例中所述微型器件200还包括扩散层250，所述扩散层250设置于所述第二半导体层240和所述第二电极260之间并覆盖所述第二半导体层240。所述扩散层250采用透明或半透明导电材料，例如但不限于，ITO。\n\n[0053]应当理解：本发明的所述微型器件200并不受限于微型发光二极管(Micro LED)，并且某些实施例也可适用于其他微型半导体器件，这种微型半导体器件以这种方式被设计以便以受控方式执行预定电子功能(例如，二极管、晶体管、集成电路)或光子功能(LED、激光器)。\n\n[0054]本发明也并未限定所述Micro LED的具体结构。例如在本实施例中，所述MicroLED为同侧电极结构。在其他实施例中，所述Micro LED还可以为垂直电极结构。\n\n[0055]具体地，所述承载基板100为用于制备所述微型器件200的原始生成基板。其中，原始生成基板是微型器件200被制造或生长在其上的基板，而不是微型器件200已被转移到其上的另一个临时基板或临时基底。即，所述微型器件200直接在所述承载基板100制备得到。例如，所述微型器件阵列可以通过直接在所述承载基板100上形成用于构成所述微型器件200的各膜层并图形化后获得。\n\n[0056]如图2所示,所述微型器件200设置于所述承载基板100上，并且所述微型器件200与所述承载基板100之间具有一弱化层201。其中，所述弱化层201包括支撑部2011和由所述支撑部2011定义的空洞部2012，并且所述支撑部2011被配置成当具有作用于所述微型器件阵列的外部力时发生断裂，使得所述微型器件200与所述承载基板100分离。\n\n[0057]具体地，所述支撑部2011，可以为但不限于，网络结构、阵列排布的条形结构、十字型结构或矩形框结构。例如，在本实施例中，所述支撑部2011为网络结构。在其他实施例中，所述支撑部2011可以为阵列排布的长条形结构。\n\n[0058]具体地，所述微型器件200为微型LED器件，即微型发光二极管(Micro LED)。但应当理解，本发明的实施例不受此限制，并且某些实施例也可适用于其他微型半导体器件，这种微型半导体器件以这种方式被设计以便以受控方式执行预定电子功能(例如，二极管、晶体管、集成电路)或光子功能(LED、激光器)。\n\n[0059]更进一步地，本发明并未限定所述Micro LED的具体结构，例如在本实施例中，所述Micro LED为同侧电极结构。在其他实施例中，所述Micro LED还可以为垂直电极结构。\n\n[0060]图3A-图3D为本发明所述微型器件的转移方法的转移过程的示意图。如图3A-图3D所示，所述转移方法包括以下步骤：\n\n[0061]提供一微型器件阵列的步骤，在所述微型器件阵列中：每一微型器件与承载基板之间具有一弱化层，所述弱化层被配置成在一作用于所述微型器件阵列的外部力的作用下发生断裂，使得所述微型器件与所述承载基板分离；\n\n[0062]对位步骤：将所述微型器件阵列与一接收基板对位贴合；以及，\n\n[0063]转移步骤：所述转移步骤包括：形成用于使所述弱化层断裂的所述外部力，使得所述微型器件与所述承载基板分离,以及,将所述微型器件保持于所述接收基板上。\n\n[0064]很显然地，本发明所述微型器件的转移方法通过采用本发明所述微型器件阵列，能实现对所述微型器件200的一步巨量转移，进而能简化当前微型器件转移方法的步骤和制程，提高转移效率；同时，还能减少使用暂时基板或临时基板、转移胶材或凸点stamp，从而能降低转移成本。\n\n[0065]同时，需要指出的是，本发明并未限定所述微型器件阵列的类型、具体结构或制作工艺，也未限定所述微型器件200在所述承载基板100上的排列布置方式。也就是说，在具体实施时，只要微型器件阵列的具体配置方式适当，能保证所述弱化层201在一外部力的作用下发生断裂，确保所述微型器件200与所述承载基板100分离即可。\n\n[0066]具体地，所述接收基板300的表面上具有阵列排布的键合凸起310，则：在所述对位步骤中，使所述微型器件200的电极对准所述键合凸起310；在所述转移步骤中，使所述微型器件200的电极黏附于所述键合凸起310上，以将所述微型器件200保持于所述接收基板300上。\n\n[0067]具体地，所述接收基板300为一阵列基板。当所述接收基板300为一阵列基板时，所述转移方法还包括以下步骤：接合步骤：将被保持于所述接收基板300的所述微型器件200电性连接于所述接收基板300上的步骤。例如，在所述接合步骤中：将所述微型器件200的电极焊接于所述键合凸起310上。\n\n[0068]作为一优选实施例，本发明所述转移方法能用于将生长于一原始基板或一生长基板上的微型器件200直接转移至一阵列基板上。\n\n[0069]如图3A-图3D所示，在本实施例中，所述转移方法包括以下步骤：\n\n[0070]S1、提供一微型器件阵列的步骤，在所述微型器件阵列中：每一微型器件与承载基板之间具有一弱化层，所述弱化层被配置成在一作用于所述微型器件阵列的外部力的作用下发生断裂，使得所述微型器件与所述承载基板分离；\n\n[0071]S2、对位步骤：将所述微型器件阵列与一接收基板对位贴合；以及，\n\n[0072]S3、转移步骤：所述转移步骤包括：形成用于使所述弱化层断裂的所述外部力，使得所述微型器件与所述承载基板分离,以及,将所述微型器件保持于所述接收基板上；以及，\n\n[0073]S4、接合步骤：将被保持于所述接收基板的所述微型器件电性连接于所述接收基板上的步骤。\n\n[0074]如图3A所示，获得本发明所述微型器件阵列。如图3A所示，在本实施例中，所述微型器件阵列与图2所示微型器件阵列的区别在于所述微型器件200的数目不同。关于图3A所示微型器件阵列的具体描述，请参考上文，此处不再赘述。可见，本发明所述微型器件阵列能用于通过本发明所述转移方法进行转移。\n\n[0075]如图3B所示，将所述微型器件阵列与一接收基板300对准，并使待转移的所述微型器件200接触所述接收基板300。\n\n[0076]例如，如图3B所示，在本实施例中，所述接收基板300为一阵列基板，所述阵列基板的表面上具有阵列排布的键合凸起310，则使所述微型器件200的第一电极270和第二电极260分别对准所述键合凸起310。\n\n[0077]如图3C所示，通过形成用于使所述弱化层201断裂的所述外部力F，使得所述微型器件200与所述承载基板100分离；并将所述微型器件200保持于所述接收基板300上。\n\n[0078]在具体实施时，可以先形成所外部力F，使得所述微型器件200脱离所述承载基板100，然后将由所述承载基板100脱离的所述微型器件200保持于所述接收基板300上。也可以为，先使得所述微型器件200被保持于所述接收基板300上；然后再形成所外部力F，使得所述微型器件200脱离所述承载基板100。\n\n[0079]很显然地，通过在所述微型器件200和所述承载基板100之间形成弱化层201，则只需要采用外部力F压断支撑部2011便可实现微型器件200的巨量转移，工艺简单，可有效降低工艺成本。\n\n[0080]优选地，在所述转移步骤S2中，由定位于所述接收基板300与所述微型器件200之间的黏性材料层将由所述承载基板100脱离的所述微型器件200保持于所述接收基板300上。例如，通过在微型器件200的电极或所述接收基板300上形成一黏性材料层，能将所述微型器件200黏附于所述接收基板300上。\n\n[0081]在具体实施时，该外部力F可以直接施加于所述微型器件阵列上或通过接收基板300施加于所述微型器件阵列上。\n\n[0082]优选地，如图3C所示，在本实施例中，所述外部力F直接施加于所述微型器件阵列上。\n\n[0083]如图3D所示，在所述步骤S4中，将上述被转移至所述接收基板300上的微型器件200键合并电连接于所述接收基板300上。\n\n[0084]在具体实施时，可以通过热压工艺将所述微型器件200的电极焊接于所述接收基板300上。\n\n[0085]本发明还提供一种微型器件阵列的制备方法，所述微型器件阵列包括承载基板和设置于所述承载基板上的至少一微型器件，所述制备方法包括：\n\n[0086]在所述微型器件和所述承载基板之间制备一弱化层的步骤，其中所述弱化层被配置成在一作用于所述微型器件阵列的外部力的作用下发生断裂，使得所述微型器件与所述承载基板分离。\n\n[0087]很显然地，本发明所述微型器件阵列能采用本发明所述微型器件阵列的制备方法制备。\n\n[0088]图4A-图4C为所述微型器件阵列的制备方法的一实施例的工艺流程示意图。如图4A-图4C，在本实施例中，所述微型器件阵列的制备方法包括以下步骤：\n\n[0089]S41、在一承载基板上制备一图形化衬底层的步骤，所述图形化衬底层的外表面具有一层图形化牺牲层；\n\n[0090]S42、在制备有所述图形化衬底层的所述承载基板上制备用于制备所述微型器件的多层磊晶层的步骤，其中所述磊晶层结构包括依次层叠的缓冲层、第一半导体层、多量子阱层及第二半导体层，并且所述缓冲层的第一表面覆盖于所述图形化衬底层和所述承载基板上；\n\n[0091]S43、对所述多层磊晶层进行蚀刻处理，以暴露所述多量子阱层；\n\n[0092]S44、对所述图形化牺牲层进行蚀刻处理，以使得所述缓冲层的在所述第一表面上形成所述弱化层；以及，\n\n[0093]S45、在所述多层磊晶层上制作第一电极和第二电极以获得微型器件的步骤，其中：所述第一电极与所述第一半导体层接触，所述第二电极与所述第二半导体层接触。\n\n[0094]如图4A所示，通过所述步骤S41,在所述承载基板100上得到一层图形化衬底层101，所述图形化衬底层101用于后续形成所述弱化层201。\n\n[0095]具体地，所述图形化衬底层101包括图案区域和暴露所述承载基板100的镂空区域。在具体实施时，可以通过控制所述图形化衬底101的镂空区域和图案区域的形状、尺寸或图案，以控制所述后续弱化层201的支撑部2011和空洞部2012的形状或尺寸。\n\n[0096]例如，如图4A所示，在本实施例中，所述图形化衬底层101的所述图案区域包括阵列排布的多个凸起，所述凸起的可以为棱台型、三棱柱型或四棱柱型。在其他实施例中，所述凸起还可以为其他规则或不规则的多棱柱型，本发明对此并不做任何限定。\n\n[0097]具体地，所述图形化衬底层101可以通过以下步骤获得：首先在所述衬底承载基板100上制备一含硅材料层并对所述含硅材料层进行图形化处理，得到图形化含硅材料层11；然后，对所述图形化含硅材料层11进行氧化处理得到所述图形化衬底层101。\n\n[0098]如图4A所示，所述图形化衬底层101包括设置于所述承载基板100上的蚀刻停止层110和包覆所述蚀刻停止层110的牺牲层111。其中，所述牺牲层111在后续的加工制中被能被去除，以用于形成所述弱化层201的空洞部2012，所述蚀刻停止层110对应形成所述绝缘层110。\n\n[0099]例如，在本实施例中，所述含硅材料层为一硅层，所述蚀刻停止层110相对应为一硅层，所述牺牲层111为SiO2。\n\n[0100]如图4B所示，在形成有所述图形化衬底层101的承载基板100上制备多层磊晶层,所述多层磊晶层依次包括缓冲层210、第一半导体层220、多量子阱层230以及第二半导体层240。\n\n[0101]如图4A所示，所述缓冲层210形成于所述图形化衬底层101上,并且所述缓冲层210的第一表面覆盖于所述图形化衬底层101和所述承载基板100上。\n\n[0102]详细来讲，所述缓冲层210的第一表面的部分区域填充于所述图形化衬底层101的镂空区域内，形成与所述承载基板100接触的支撑部2011；所述缓冲层210第一表面的其它区域覆盖于所述蚀刻停止层110的外表面上，用于定义所述空洞部2012。\n\n[0103]如图4C所示，在所述步骤S13中，通过对所述多层磊晶层进行蚀刻，以暴露出所述第一半导体层220，以便于后续形成与第一半导体层220接触的第一电极270。\n\n[0104]如图4C所示，在所述步骤S13中，去除所述牺牲层111后，所述牺牲层111所对应的区域形成由所述缓冲层210的第一表面围设的空洞，即为所述弱化层201的空洞部2012。\n\n[0105]在具体实施时，可以采用干蚀刻或湿蚀刻处理。在本实施例中，采用ICP蚀刻处理工艺。\n\n[0106]在所述步骤S44中，制备第一电极270和第二电极260，所述第一电极270与所述第一半导体层220接触，所述第二电极260与所述第二半导体层240接触。\n\n[0107]具体地，所述微型器件阵列的制备方法还包括以下步骤：\n\n[0108]在制备第二电极和所述多层磊晶层之间制备扩散层的步骤；以及，\n\n[0109]制备保护层的步骤，所述保护层覆盖所述多层磊晶层和所述承载基板并具有暴露第一电极和第二电极的第一过孔和第二过孔。在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0110]以上对本发明实施例所提供的一种转移方法、微型器件阵列及其制备方法进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10905, 23959, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示面板及其制备方法、显示装置。\n\n背景技术\n\n[0002]与OLED(Organic Light emitting Display，有机发光二极管显示器)相比，miniLED(mini Light Emitting Diode，亚毫米发光二极管)作为一种无机物LED具有更高的稳定性和亮度等优点，而将QD(quantum dots，量子点)与miniLED相结合的QD-miniLED显示技术更具发展潜力。QD-miniLED器件是以蓝光miniLED作为背光，利用蓝光产生的高能光子激发红色量子点或绿色量子点产生相应的红光或绿光，从而实现全彩化显示。\n\n[0003]QD-miniLED有多种器件结构，而研究较多的是量子点彩膜结构。这种结构包括两块玻璃基板，分别为QD基板和miniLED基板，需要将这两块基板进行精准对位后贴合以形成完整器件。由于贴合用的框胶有一定厚度，因此贴合后的基板之间会存在较大间隙，如此将导致某个像素对应的蓝光出射到相邻像素产生光串扰问题。\n\n[0004]因此，现有QD-miniLED器件存在光串扰的问题需要解决。\n\n发明内容\n\n[0005]本发明提供一种显示面板及其制备方法、显示装置，以缓解现有QD-miniLED器件存在光串扰的技术问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明实施例提供一种显示面板，其包括驱动背板、多个LED芯片、阻挡层以及光转换层。多个所述LED芯片绑定于所述驱动背板上，且相邻所述LED芯片之间具有间隔。所述阻挡层设置于所述间隔内，且所述阻挡层的厚度大于所述LED芯片的厚度。所述光转换层设置于所述LED芯片上未设置所述阻挡层的区域。其中，所述阻挡层在对应所述LED芯片的位置形成开口，所述开口裸露出所述LED芯片，所述光转换层设置在所述开口内。\n\n[0008]在本发明实施例提供的显示面板中，所述阻挡层的材料包括黑色胶材、灰色胶材和黑色油墨中的一种。\n\n[0009]在本发明实施例提供的显示面板中，所述阻挡层的厚度大于或等于所述LED芯片与所述光转换层的厚度之和。\n\n[0010]在本发明实施例提供的显示面板中，所述LED芯片包括蓝光LED芯片。\n\n[0011]在本发明实施例提供的显示面板中，所述光转换层的材料包括量子点材料。\n\n[0012]在本发明实施例提供的显示面板中，所述量子点材料包括红色量子点和绿色量子点。\n\n[0013]本发明实施例还提供一种显示面板制备方法，其包括提供转移基板，在所述转移基板上制备多个LED芯片；提供驱动背板，把所述转移基板上的多个所述LED芯片对应转移到所述驱动背板上，并与所述驱动背板绑定；在所述LED芯片之间制备阻挡层，所述阻挡层的厚度大于所述LED芯片的厚度，以在对应所述LED芯片的位置形成开口，所述开口裸露出所述LED芯片；在所述开口内制备光转换层。\n\n[0014]在本发明实施例提供的显示面板制备方法中，所述阻挡层与所述LED芯片的厚度差为10微米至20微米。\n\n[0015]在本发明实施例提供的显示面板制备方法中，采用分步式喷墨打印方式制备所述阻挡层和所述光转换层。\n\n[0016]本发明实施例还提供一种显示装置，其包括前述实施例其中之一的显示面板。\n\n[0017]本发明的有益效果为：本发明提供的显示面板及其制备方法以及显示装置中在LED芯片之间的间隔内设置阻挡层，以阻挡LED芯片之间的侧面光串扰，且阻挡层的厚度大于LED芯片的厚度，以在对应LED芯片的位置形成开口，并在开口内设置光转换层，使光转换层直接与LED芯片接触，解决了现有QD-miniLED器件因QD基板与miniLED基板之间存在较大间隙而导致光串扰的问题。而且光转换层直接与LED芯片接触只需使用一块基板，从而无需基板之间的精准对位，简化了工艺流程，节省了基板成本。\n\n附图说明\n\n[0018]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1为本发明实施例提供的显示面板的剖面结构示意图；\n\n[0020]图2为本发明实施例提供的显示面板制备方法的流程示意图；\n\n[0021]图3至图8为本发明实施例提供的显示面板制备方法中各步骤制得的显示面板的剖面结构示意图。\n\n具体实施方式\n\n[0022]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。在附图中，为了清晰理解和便于描述，夸大了一些层和区域的厚度。即附图中示出的每个组件的尺寸和厚度是任意示出的，但是本发明不限于此。\n\n[0023]请参照图1，图1为本发明实施例提供的显示面板的剖面结构示意图。所述显示面板100包括驱动背板10、多个LED芯片20、阻挡层30以及光转换层40。多个所述LED芯片20绑定于所述驱动背板10上，且相邻所述LED芯片20之间具有间隔。所述阻挡层30设置于所述间隔内，且所述阻挡层30的厚度L1大于所述LED芯片20的厚度L2。所述光转换层40设置于所述LED芯片20上未设置所述阻挡层30的区域。其中，所述阻挡层30在对应所述LED芯片20的位置形成开口31，所述开口31裸露出所述LED芯片20，所述光转换层40设置在所述开口31内。所述显示面板100以所述LED芯片20作为背光源，所述光转换层40作为彩色滤光层，所述LED芯片20和所述光转换层40组合可实现全彩显示。\n\n[0024]具体地，所述LED芯片20包括miniLED芯片，所述miniLED芯片通常先制备在转移基板上，然后再转移到所述驱动背板10上，与所述驱动背板10绑定。所述驱动背板10上设置有像素驱动电路(图未示)，每个LED芯片20均可对应电连接一个像素驱动电路，从而使得每个LED芯片20均可独立发光。每个LED芯片20除了存在垂直于出光面的出射光，还存在侧面出射光，而侧面出射光会导致相邻LED芯片20之间的光串扰。通过在LED芯片20之间的间隔内设置阻挡层30，可避免侧面光串扰现象。\n\n[0025]所述阻挡层30的材料包括黑色胶材、灰色胶材和黑色油墨等遮光材料中的至少一种。阻挡层30会阻挡每个LED芯片20的部分侧面出射光，防止其进入相邻的LED芯片20，从而避免了LED芯片20的侧面光串扰现象，提高了显示面板100的显示效果。\n\n[0026]所述阻挡层30的厚度L1大于所述LED芯片20的厚度L2，以在对应所述LED芯片20的位置形成开口31，所述开口31裸露出所述LED芯片20，所述光转换层40设置在所述开口31内。也即所述阻挡层30除了可以避免LED芯片20的侧面光串扰现象，且超出所述LED芯片20的部分还可充当制备所述光转换层40的堤坝。\n\n[0027]所述阻挡层30的厚度L1可以比所述LED芯片20的厚度L2大10微米至20微米，使所述阻挡层30的厚度L1大于或等于所述LED芯片20与所述光转换层40的厚度之和，以保证制备的所述光转换层40的可靠性。所述光转换层40可以把所述LED芯片20发出的光转换成不同的颜色，以实现全彩显示。\n\n[0028]具体地，所述LED芯片20为蓝光LED芯片，用于发射蓝光。所述LED芯片20发出的蓝光经过所述光转换层40后可以发出红绿蓝三基色的光，以实现全彩显示。\n\n[0029]所述光转换层40的材料包括量子点材料。量子点材料具有高发光效率、高色纯度、广色域等优点。将量子点材料用作彩色滤光层，能够为显示面板100提供更加逼真的色彩显示。本发明实施例集合了miniLED与量子点的优势，可使得显示面板100具有低功耗、高性能、长寿命等优点。\n\n[0030]进一步地，所述量子点材料包括红色量子点和绿色量子点，绿色量子点的粒径较小，红色量子点的粒径较大，红色量子点受光激发发射红光，绿色量子点受光激发发射绿光。红色量子点形成的光转换层40作为红色量子点彩膜41，绿色量子点形成的光转换层40作为绿色量子点彩膜42，不同颜色的量子点彩膜设置在不同的开口31内，也即所述光转换层40包括红色量子点彩膜41和绿色量子点彩膜42，所述红色量子点彩膜41和所述绿色量子点彩膜42设置在不同的所述开口31内。所述LED芯片20发出的蓝光经过所述红色量子点彩膜41后被转换成红光，所述LED芯片20发出的蓝光经过所述绿色量子点彩膜42后被转换成绿光。\n\n[0031]所述显示面板100包括多个像素单元P，每个像素单元P包括至少三个LED芯片20，其中一个LED芯片20所对应的开口31内设置红色量子点彩膜41，一个LED芯片20所对应的开口31内设置绿色量子点彩膜42，而另外一个LED芯片20所对应的开口31内不设置量子点彩膜，可在该开口31内设置透明材料，使LED芯片20发出的蓝光直接透过。如此，像素单元P内的LED芯片20发出的蓝光经过光转换层40后，可以发出红绿蓝三基色的光，以实现全彩显示。\n\n[0032]可以理解的是，发蓝光的LED芯片20更易制作，且蓝光的能量高，更容易激发红色量子点材料以及绿色量子点材料分别发出红光和绿光，更易实现全彩显示。当然地，本发明不限于此，本发明的所述LED芯片20也可以为发射红光或绿光的LED芯片，相对应的，所述光转换层40可以设置为蓝色量子点彩膜和绿色量子点彩膜或红色量子点彩膜和蓝色量子点彩膜。\n\n[0033]需要说明的是，本发明的所述显示面板100还可包括设置在在所述阻挡层30及所述光转换层40上的封装层(图未示)，以对所述驱动背板10进行封装处理。所述封装层的材料可以为透明封装胶材，所述封装层能够保护所述驱动背板10上的LED芯片20，以阻隔水氧等。\n\n[0034]在本实施例中，在LED芯片20之间的间隔内设置阻挡层30，以阻挡LED芯片20之间的侧面光串扰，且阻挡层30的厚度L1大于LED芯片20的厚度L2，以在对应LED芯片20的位置形成开口31，并在开口31内设置光转换层40，使光转换层40直接与LED芯片20接触，解决了现有QD-miniLED器件因QD基板与miniLED基板之间存在较大间隙而导致光串扰的问题。而且光转换层40直接与LED芯片20接触只需使用一块基板，从而无需基板之间的精准对位，简化了工艺流程，节省了基板成本。\n\n[0035]请参照图2至图8，图2为本发明实施例提供的显示面板制备方法的流程示意图，图3至图8为本发明实施例提供的显示面板制备方法中各步骤制得的剖面结构示意图。所述显示面板制备方法包括以下步骤：\n\n[0036]步骤S301，提供转移基板50，在所述转移基板50上制备多个LED芯片20。\n\n[0037]具体地，可采用金属有机化合物化学气相沉积(Metal-organic ChemicalVaporDeposition，MOVCD)、分子束外延(Molecular Beam Epitaxy，MBE)或者氢化物气相外延(Hydride Vapor Phase Epitaxy，HVPE)等方式在转移基板50上制备多个LED芯片20，多个LED芯片20阵列排布，如图3所示。其中所述LED芯片20可以为发射蓝光的LED芯片20，所述转移基板50包括蓝宝石衬底等。\n\n[0038]步骤S302，提供驱动背板10，把所述转移基板50上的多个所述LED芯片20对应转移到所述驱动背板10上，并与所述驱动背板10绑定。\n\n[0039]具体地，参照图4，提供驱动背板10，采用传统的打件工艺或各项异性导电胶(ACF)工艺把所述转移基板50上的多个所述LED芯片20对应转移到所述驱动背板10上，并加热完成固晶，使所述LED芯片20紧密连接在所述驱动背板10上。所述驱动背板10上设置有像素驱动电路(图未示)，每个LED芯片20均可对应电连接一个像素驱动电路，从而使得每个LED芯片20均可独立发光，以实现所述LED芯片20与所述驱动背板10的绑定。在完成所述LED芯片20与所述驱动背板10的绑定后，剥离掉所述转移基板50，形成如图5所示的结构，所述LED芯片20在所述驱动背板10仍阵列排布，所述LED芯片20之间具有间隔。\n\n[0040]步骤S303，在所述LED芯片20之间制备阻挡层30，所述阻挡层30的厚度L1大于所述LED芯片20的厚度L2，以在对应所述LED芯片20的位置形成开口31，所述开口31裸露出所述LED芯片20。\n\n[0041]具体地，参照图6，采用喷墨打印(Ink jet Print，IJP)工艺在所述驱动背板10上的所述LED芯片20之间的间隔中打印阻挡层30。所述阻挡层30的材料包括黑色胶材、灰色胶材和黑色油墨等遮光材料中的至少一种。以黑色胶材为例，因黑色胶材为高粘度材料，故在喷射高粘度的黑色胶材液体前对其进行加热或震荡等处理，使其流动性增加以便喷嘴能高速稳定喷出墨水。打印的黑色胶材(即阻挡层30)的厚度L1需大于所述LED芯片20的厚度L2，以在对应所述LED芯片20的位置形成开口31，所述开口31裸露出所述LED芯片20，也即每个所述LED芯片20对应一个开口31，其中所述开口31也即所述阻挡层30与所述LED芯片20之间形成的围坝。所述黑色胶材(即阻挡层30)的厚度L1可以为80微米至100微米，但不限于此，所述黑色胶材(即阻挡层30)的具体厚度L1可根据所述LED芯片20的规格确定，需满足比所述LED芯片20的厚度L2高出10微米至20微米。\n\n[0042]将打印完黑色胶材的驱动背板10放入烘箱，在60至100摄氏度的条件下，对打印的黑色胶材进行加热固化适当时间，以除去其中的溶剂，形成所述阻挡层30。阻挡层30会阻挡每个LED芯片20的部分侧面出射光，防止其进入相邻的LED芯片20，从而避免了LED芯片20的侧面光串扰现象，提高了显示面板的显示效果。\n\n[0043]步骤S304，在所述开口31内制备光转换层40。\n\n[0044]具体地，参照图7，在所述LED芯片20之间的间隔内形成阻挡层30后，采用喷墨打印工艺，在所述阻挡层30形成的所述开口31内打印光转换层40。所述光转换层40的材料包括量子点材料，把量子点材料打印在所述阻挡层30与所述LED芯片20形成的围坝内，使量子点材料与所述LED芯片20直接接触，然后再经过热固化(比如在50℃的条件下固化10分钟)或UV固化(比如在365nm的UV光照下，固化2至5分钟)，形成光转换层40。所述光转换层40的厚度范围为5微米至20微米，所述光转换层40的厚度与所述LED芯片20的厚度L2之和小于或等于所述阻挡层30的厚度L1，以保证所述阻挡层30与所述LED芯片20形成的围坝能够阻挡打印光转换层40时，量子点材料溢出围坝。\n\n[0045]所述量子点材料包括红色量子点和绿色量子点，绿色量子点的粒径较小，红色量子点的粒径较大，红色量子点受光激发发射红光，绿色量子点受光激发发射绿光。红色量子点形成的光转换层40作为红色量子点彩膜41，绿色量子点形成的光转换层40作为绿色量子点彩膜42，不同颜色的量子点彩膜设置在不同的开口31内，也即所述光转换层40包括红色量子点彩膜41和绿色量子点彩膜42，所述红色量子点彩膜41和所述绿色量子点彩膜42设置在不同的所述开口31内。所述LED芯片20发出的蓝光经过所述红色量子点彩膜41后被转换成红光，所述LED芯片20发出的蓝光经过所述绿色量子点彩膜42后被转换成绿光。\n\n[0046]显示面板包括多个像素单元P，每个像素单元P包括至少三个LED芯片20，其中一个LED芯片20所对应的开口31内设置红色量子点彩膜41，一个LED芯片20所对应的开口31内设置绿色量子点彩膜42，而另外一个LED芯片20所对应的开口31内不设置量子点彩膜，可在该开口31内设置透明材料，使LED芯片20发出的蓝光直接透过。如此，像素单元P内的LED芯片20发出的蓝光经过光转换层40后，可以发出红绿蓝三基色的光，以实现全彩显示。\n\n[0047]在所述开口31内制备完所述光转换层40后，在所述阻挡层30及所述光转换层40上覆盖透明封装胶材作为封装层60，以对所述驱动背板10进行封装处理，形成如图8所示的显示面板。所述封装层60能够保护所述驱动背板10上的LED芯片20，以阻隔水氧等。其中所述封装层60可以直接填充在所述像素单元P中未设置量子点彩膜的开口31内，而不用单独在该开口31内填充透明材料，简化了工艺流程。\n\n[0048]在本发明实施例提供的显示面板制备方法中，在LED芯片20之间的间隔内设置阻挡层30，以阻挡LED芯片20之间的侧面光串扰，并在阻挡层30与LED芯片20之间形成的围坝内设置光转换层40，使光转换层40直接与LED芯片20接触，解决了现有QD-miniLED器件因QD基板与miniLED基板之间存在较大间隙而导致光串扰的问题。光转换层40直接与LED芯片20接触只需使用一块基板，从而无需基板之间的精准对位，简化了工艺流程，节省了基板成本。而且在制备阻挡层30和光转换层40时，采用分步式喷墨打印方式，对于高粘度的黑色胶材或灰色胶材，在喷射高粘度液体前先对其进行加热或震荡等处理，使其流动性增加以便喷嘴能高速稳定喷出墨水；而对于较低粘度体系的量子点墨水，则可利用压电陶瓷等喷嘴直接将液体喷射到目标区域，提高了在LED芯片20上沉积膜层时的工艺稳定性。\n\n[0049]本发明实施例还提供一种显示装置，其包括前述实施例其中之一的显示面板100、绑定于所述显示面板100的电路板等器件以及覆盖在所述显示面板100上的盖板等。\n\n[0050]根据上述实施例可知：\n\n[0051]本发明提供一种显示面板及其制备方法以及显示装置；所述显示面板包括驱动背板、多个LED芯片、阻挡层以及光转换层，多个所述LED芯片绑定于所述驱动背板上，且相邻所述LED芯片之间具有间隔，所述阻挡层设置于所述间隔内，且所述阻挡层的厚度大于所述LED芯片的厚度，以在对应所述LED芯片的位置形成开口，所述开口裸露出所述LED芯片，所述光转换层设置于所述开口内的LED芯片上，以解决现有QD-miniLED器件因QD基板与miniLED基板之间存在较大间隙而导致光串扰的问题，而且光转换层直接与LED芯片接触只需使用一块基板，从而无需基板之间的精准对位，简化了工艺流程，节省了基板成。\n\n[0052]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示面板及其制备方法、显示装置。\n\n背景技术\n\n[0002]与OLED(Organic Light emitting Display，有机发光二极管显示器)相比，miniLED(mini Light Emitting Diode，亚毫米发光二极管)作为一种无机物LED具有更高的稳定性和亮度等优点，而将QD(quantum dots，量子点)与miniLED相结合的QD-miniLED显示技术更具发展潜力。QD-miniLED器件是以蓝光miniLED作为背光，利用蓝光产生的高能光子激发红色量子点或绿色量子点产生相应的红光或绿光，从而实现全彩化显示。\n\n[0003]QD-miniLED有多种器件结构，而研究较多的是量子点彩膜结构。这种结构包括两块玻璃基板，分别为QD基板和miniLED基板，需要将这两块基板进行精准对位后贴合以形成完整器件。由于贴合用的框胶有一定厚度，因此贴合后的基板之间会存在较大间隙，如此将导致某个像素对应的蓝光出射到相邻像素产生光串扰问题。\n\n[0004]因此，现有QD-miniLED器件存在光串扰的问题需要解决。\n\n发明内容\n\n[0005]本发明提供一种显示面板及其制备方法、显示装置，以缓解现有QD-miniLED器件存在光串扰的技术问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明实施例提供一种显示面板，其包括驱动背板、多个LED芯片、阻挡层以及光转换层。多个所述LED芯片绑定于所述驱动背板上，且相邻所述LED芯片之间具有间隔。所述阻挡层设置于所述间隔内，且所述阻挡层的厚度大于所述LED芯片的厚度。所述光转换层设置于所述LED芯片上未设置所述阻挡层的区域。其中，所述阻挡层在对应所述LED芯片的位置形成开口，所述开口裸露出所述LED芯片，所述光转换层设置在所述开口内。\n\n[0008]在本发明实施例提供的显示面板中，所述阻挡层的材料包括黑色胶材、灰色胶材和黑色油墨中的一种。\n\n[0009]在本发明实施例提供的显示面板中，所述阻挡层的厚度大于或等于所述LED芯片与所述光转换层的厚度之和。\n\n[0010]在本发明实施例提供的显示面板中，所述LED芯片包括蓝光LED芯片。\n\n[0011]在本发明实施例提供的显示面板中，所述光转换层的材料包括量子点材料。\n\n[0012]在本发明实施例提供的显示面板中，所述量子点材料包括红色量子点和绿色量子点。\n\n[0013]本发明实施例还提供一种显示面板制备方法，其包括提供转移基板，在所述转移基板上制备多个LED芯片；提供驱动背板，把所述转移基板上的多个所述LED芯片对应转移到所述驱动背板上，并与所述驱动背板绑定；在所述LED芯片之间制备阻挡层，所述阻挡层的厚度大于所述LED芯片的厚度，以在对应所述LED芯片的位置形成开口，所述开口裸露出所述LED芯片；在所述开口内制备光转换层。\n\n[0014]在本发明实施例提供的显示面板制备方法中，所述阻挡层与所述LED芯片的厚度差为10微米至20微米。\n\n[0015]在本发明实施例提供的显示面板制备方法中，采用分步式喷墨打印方式制备所述阻挡层和所述光转换层。\n\n[0016]本发明实施例还提供一种显示装置，其包括前述实施例其中之一的显示面板。\n\n[0017]本发明的有益效果为：本发明提供的显示面板及其制备方法以及显示装置中在LED芯片之间的间隔内设置阻挡层，以阻挡LED芯片之间的侧面光串扰，且阻挡层的厚度大于LED芯片的厚度，以在对应LED芯片的位置形成开口，并在开口内设置光转换层，使光转换层直接与LED芯片接触，解决了现有QD-miniLED器件因QD基板与miniLED基板之间存在较大间隙而导致光串扰的问题。而且光转换层直接与LED芯片接触只需使用一块基板，从而无需基板之间的精准对位，简化了工艺流程，节省了基板成本。\n\n附图说明\n\n[0018]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1为本发明实施例提供的显示面板的剖面结构示意图；\n\n[0020]图2为本发明实施例提供的显示面板制备方法的流程示意图；\n\n[0021]图3至图8为本发明实施例提供的显示面板制备方法中各步骤制得的显示面板的剖面结构示意图。\n\n具体实施方式\n\n[0022]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。在附图中，为了清晰理解和便于描述，夸大了一些层和区域的厚度。即附图中示出的每个组件的尺寸和厚度是任意示出的，但是本发明不限于此。\n\n[0023]请参照图1，图1为本发明实施例提供的显示面板的剖面结构示意图。所述显示面板100包括驱动背板10、多个LED芯片20、阻挡层30以及光转换层40。多个所述LED芯片20绑定于所述驱动背板10上，且相邻所述LED芯片20之间具有间隔。所述阻挡层30设置于所述间隔内，且所述阻挡层30的厚度L1大于所述LED芯片20的厚度L2。所述光转换层40设置于所述LED芯片20上未设置所述阻挡层30的区域。其中，所述阻挡层30在对应所述LED芯片20的位置形成开口31，所述开口31裸露出所述LED芯片20，所述光转换层40设置在所述开口31内。所述显示面板100以所述LED芯片20作为背光源，所述光转换层40作为彩色滤光层，所述LED芯片20和所述光转换层40组合可实现全彩显示。\n\n[0024]具体地，所述LED芯片20包括miniLED芯片，所述miniLED芯片通常先制备在转移基板上，然后再转移到所述驱动背板10上，与所述驱动背板10绑定。所述驱动背板10上设置有像素驱动电路(图未示)，每个LED芯片20均可对应电连接一个像素驱动电路，从而使得每个LED芯片20均可独立发光。每个LED芯片20除了存在垂直于出光面的出射光，还存在侧面出射光，而侧面出射光会导致相邻LED芯片20之间的光串扰。通过在LED芯片20之间的间隔内设置阻挡层30，可避免侧面光串扰现象。\n\n[0025]所述阻挡层30的材料包括黑色胶材、灰色胶材和黑色油墨等遮光材料中的至少一种。阻挡层30会阻挡每个LED芯片20的部分侧面出射光，防止其进入相邻的LED芯片20，从而避免了LED芯片20的侧面光串扰现象，提高了显示面板100的显示效果。\n\n[0026]所述阻挡层30的厚度L1大于所述LED芯片20的厚度L2，以在对应所述LED芯片20的位置形成开口31，所述开口31裸露出所述LED芯片20，所述光转换层40设置在所述开口31内。也即所述阻挡层30除了可以避免LED芯片20的侧面光串扰现象，且超出所述LED芯片20的部分还可充当制备所述光转换层40的堤坝。\n\n[0027]所述阻挡层30的厚度L1可以比所述LED芯片20的厚度L2大10微米至20微米，使所述阻挡层30的厚度L1大于或等于所述LED芯片20与所述光转换层40的厚度之和，以保证制备的所述光转换层40的可靠性。所述光转换层40可以把所述LED芯片20发出的光转换成不同的颜色，以实现全彩显示。\n\n[0028]具体地，所述LED芯片20为蓝光LED芯片，用于发射蓝光。所述LED芯片20发出的蓝光经过所述光转换层40后可以发出红绿蓝三基色的光，以实现全彩显示。\n\n[0029]所述光转换层40的材料包括量子点材料。量子点材料具有高发光效率、高色纯度、广色域等优点。将量子点材料用作彩色滤光层，能够为显示面板100提供更加逼真的色彩显示。本发明实施例集合了miniLED与量子点的优势，可使得显示面板100具有低功耗、高性能、长寿命等优点。\n\n[0030]进一步地，所述量子点材料包括红色量子点和绿色量子点，绿色量子点的粒径较小，红色量子点的粒径较大，红色量子点受光激发发射红光，绿色量子点受光激发发射绿光。红色量子点形成的光转换层40作为红色量子点彩膜41，绿色量子点形成的光转换层40作为绿色量子点彩膜42，不同颜色的量子点彩膜设置在不同的开口31内，也即所述光转换层40包括红色量子点彩膜41和绿色量子点彩膜42，所述红色量子点彩膜41和所述绿色量子点彩膜42设置在不同的所述开口31内。所述LED芯片20发出的蓝光经过所述红色量子点彩膜41后被转换成红光，所述LED芯片20发出的蓝光经过所述绿色量子点彩膜42后被转换成绿光。\n\n[0031]所述显示面板100包括多个像素单元P，每个像素单元P包括至少三个LED芯片20，其中一个LED芯片20所对应的开口31内设置红色量子点彩膜41，一个LED芯片20所对应的开口31内设置绿色量子点彩膜42，而另外一个LED芯片20所对应的开口31内不设置量子点彩膜，可在该开口31内设置透明材料，使LED芯片20发出的蓝光直接透过。如此，像素单元P内的LED芯片20发出的蓝光经过光转换层40后，可以发出红绿蓝三基色的光，以实现全彩显示。\n\n[0032]可以理解的是，发蓝光的LED芯片20更易制作，且蓝光的能量高，更容易激发红色量子点材料以及绿色量子点材料分别发出红光和绿光，更易实现全彩显示。当然地，本发明不限于此，本发明的所述LED芯片20也可以为发射红光或绿光的LED芯片，相对应的，所述光转换层40可以设置为蓝色量子点彩膜和绿色量子点彩膜或红色量子点彩膜和蓝色量子点彩膜。\n\n[0033]需要说明的是，本发明的所述显示面板100还可包括设置在在所述阻挡层30及所述光转换层40上的封装层(图未示)，以对所述驱动背板10进行封装处理。所述封装层的材料可以为透明封装胶材，所述封装层能够保护所述驱动背板10上的LED芯片20，以阻隔水氧等。\n\n[0034]在本实施例中，在LED芯片20之间的间隔内设置阻挡层30，以阻挡LED芯片20之间的侧面光串扰，且阻挡层30的厚度L1大于LED芯片20的厚度L2，以在对应LED芯片20的位置形成开口31，并在开口31内设置光转换层40，使光转换层40直接与LED芯片20接触，解决了现有QD-miniLED器件因QD基板与miniLED基板之间存在较大间隙而导致光串扰的问题。而且光转换层40直接与LED芯片20接触只需使用一块基板，从而无需基板之间的精准对位，简化了工艺流程，节省了基板成本。\n\n[0035]请参照图2至图8，图2为本发明实施例提供的显示面板制备方法的流程示意图，图3至图8为本发明实施例提供的显示面板制备方法中各步骤制得的剖面结构示意图。所述显示面板制备方法包括以下步骤：\n\n[0036]步骤S301，提供转移基板50，在所述转移基板50上制备多个LED芯片20。\n\n[0037]具体地，可采用金属有机化合物化学气相沉积(Metal-organic ChemicalVaporDeposition，MOVCD)、分子束外延(Molecular Beam Epitaxy，MBE)或者氢化物气相外延(Hydride Vapor Phase Epitaxy，HVPE)等方式在转移基板50上制备多个LED芯片20，多个LED芯片20阵列排布，如图3所示。其中所述LED芯片20可以为发射蓝光的LED芯片20，所述转移基板50包括蓝宝石衬底等。\n\n[0038]步骤S302，提供驱动背板10，把所述转移基板50上的多个所述LED芯片20对应转移到所述驱动背板10上，并与所述驱动背板10绑定。\n\n[0039]具体地，参照图4，提供驱动背板10，采用传统的打件工艺或各项异性导电胶(ACF)工艺把所述转移基板50上的多个所述LED芯片20对应转移到所述驱动背板10上，并加热完成固晶，使所述LED芯片20紧密连接在所述驱动背板10上。所述驱动背板10上设置有像素驱动电路(图未示)，每个LED芯片20均可对应电连接一个像素驱动电路，从而使得每个LED芯片20均可独立发光，以实现所述LED芯片20与所述驱动背板10的绑定。在完成所述LED芯片20与所述驱动背板10的绑定后，剥离掉所述转移基板50，形成如图5所示的结构，所述LED芯片20在所述驱动背板10仍阵列排布，所述LED芯片20之间具有间隔。\n\n[0040]步骤S303，在所述LED芯片20之间制备阻挡层30，所述阻挡层30的厚度L1大于所述LED芯片20的厚度L2，以在对应所述LED芯片20的位置形成开口31，所述开口31裸露出所述LED芯片20。\n\n[0041]具体地，参照图6，采用喷墨打印(Ink jet Print，IJP)工艺在所述驱动背板10上的所述LED芯片20之间的间隔中打印阻挡层30。所述阻挡层30的材料包括黑色胶材、灰色胶材和黑色油墨等遮光材料中的至少一种。以黑色胶材为例，因黑色胶材为高粘度材料，故在喷射高粘度的黑色胶材液体前对其进行加热或震荡等处理，使其流动性增加以便喷嘴能高速稳定喷出墨水。打印的黑色胶材(即阻挡层30)的厚度L1需大于所述LED芯片20的厚度L2，以在对应所述LED芯片20的位置形成开口31，所述开口31裸露出所述LED芯片20，也即每个所述LED芯片20对应一个开口31，其中所述开口31也即所述阻挡层30与所述LED芯片20之间形成的围坝。所述黑色胶材(即阻挡层30)的厚度L1可以为80微米至100微米，但不限于此，所述黑色胶材(即阻挡层30)的具体厚度L1可根据所述LED芯片20的规格确定，需满足比所述LED芯片20的厚度L2高出10微米至20微米。\n\n[0042]将打印完黑色胶材的驱动背板10放入烘箱，在60至100摄氏度的条件下，对打印的黑色胶材进行加热固化适当时间，以除去其中的溶剂，形成所述阻挡层30。阻挡层30会阻挡每个LED芯片20的部分侧面出射光，防止其进入相邻的LED芯片20，从而避免了LED芯片20的侧面光串扰现象，提高了显示面板的显示效果。\n\n[0043]步骤S304，在所述开口31内制备光转换层40。\n\n[0044]具体地，参照图7，在所述LED芯片20之间的间隔内形成阻挡层30后，采用喷墨打印工艺，在所述阻挡层30形成的所述开口31内打印光转换层40。所述光转换层40的材料包括量子点材料，把量子点材料打印在所述阻挡层30与所述LED芯片20形成的围坝内，使量子点材料与所述LED芯片20直接接触，然后再经过热固化(比如在50℃的条件下固化10分钟)或UV固化(比如在365nm的UV光照下，固化2至5分钟)，形成光转换层40。所述光转换层40的厚度范围为5微米至20微米，所述光转换层40的厚度与所述LED芯片20的厚度L2之和小于或等于所述阻挡层30的厚度L1，以保证所述阻挡层30与所述LED芯片20形成的围坝能够阻挡打印光转换层40时，量子点材料溢出围坝。\n\n[0045]所述量子点材料包括红色量子点和绿色量子点，绿色量子点的粒径较小，红色量子点的粒径较大，红色量子点受光激发发射红光，绿色量子点受光激发发射绿光。红色量子点形成的光转换层40作为红色量子点彩膜41，绿色量子点形成的光转换层40作为绿色量子点彩膜42，不同颜色的量子点彩膜设置在不同的开口31内，也即所述光转换层40包括红色量子点彩膜41和绿色量子点彩膜42，所述红色量子点彩膜41和所述绿色量子点彩膜42设置在不同的所述开口31内。所述LED芯片20发出的蓝光经过所述红色量子点彩膜41后被转换成红光，所述LED芯片20发出的蓝光经过所述绿色量子点彩膜42后被转换成绿光。\n\n[0046]显示面板包括多个像素单元P，每个像素单元P包括至少三个LED芯片20，其中一个LED芯片20所对应的开口31内设置红色量子点彩膜41，一个LED芯片20所对应的开口31内设置绿色量子点彩膜42，而另外一个LED芯片20所对应的开口31内不设置量子点彩膜，可在该开口31内设置透明材料，使LED芯片20发出的蓝光直接透过。如此，像素单元P内的LED芯片20发出的蓝光经过光转换层40后，可以发出红绿蓝三基色的光，以实现全彩显示。\n\n[0047]在所述开口31内制备完所述光转换层40后，在所述阻挡层30及所述光转换层40上覆盖透明封装胶材作为封装层60，以对所述驱动背板10进行封装处理，形成如图8所示的显示面板。所述封装层60能够保护所述驱动背板10上的LED芯片20，以阻隔水氧等。其中所述封装层60可以直接填充在所述像素单元P中未设置量子点彩膜的开口31内，而不用单独在该开口31内填充透明材料，简化了工艺流程。\n\n[0048]在本发明实施例提供的显示面板制备方法中，在LED芯片20之间的间隔内设置阻挡层30，以阻挡LED芯片20之间的侧面光串扰，并在阻挡层30与LED芯片20之间形成的围坝内设置光转换层40，使光转换层40直接与LED芯片20接触，解决了现有QD-miniLED器件因QD基板与miniLED基板之间存在较大间隙而导致光串扰的问题。光转换层40直接与LED芯片20接触只需使用一块基板，从而无需基板之间的精准对位，简化了工艺流程，节省了基板成本。而且在制备阻挡层30和光转换层40时，采用分步式喷墨打印方式，对于高粘度的黑色胶材或灰色胶材，在喷射高粘度液体前先对其进行加热或震荡等处理，使其流动性增加以便喷嘴能高速稳定喷出墨水；而对于较低粘度体系的量子点墨水，则可利用压电陶瓷等喷嘴直接将液体喷射到目标区域，提高了在LED芯片20上沉积膜层时的工艺稳定性。\n\n[0049]本发明实施例还提供一种显示装置，其包括前述实施例其中之一的显示面板100、绑定于所述显示面板100的电路板等器件以及覆盖在所述显示面板100上的盖板等。\n\n[0050]根据上述实施例可知：\n\n[0051]本发明提供一种显示面板及其制备方法以及显示装置；所述显示面板包括驱动背板、多个LED芯片、阻挡层以及光转换层，多个所述LED芯片绑定于所述驱动背板上，且相邻所述LED芯片之间具有间隔，所述阻挡层设置于所述间隔内，且所述阻挡层的厚度大于所述LED芯片的厚度，以在对应所述LED芯片的位置形成开口，所述开口裸露出所述LED芯片，所述光转换层设置于所述开口内的LED芯片上，以解决现有QD-miniLED器件因QD基板与miniLED基板之间存在较大间隙而导致光串扰的问题，而且光转换层直接与LED芯片接触只需使用一块基板，从而无需基板之间的精准对位，简化了工艺流程，节省了基板成。\n\n[0052]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10906, 23960, '技术领域\n\n[0001]本发明涉及显示面板制造技术领域，尤其涉及一种可卷曲柔性显示装置。\n\n背景技术\n\n[0002]可卷曲OLED显示装置作为一种新型显示科技的产品，未来将全球面板模组厂商创新发展的方向。可卷曲显示装置在携带时被卷曲以实现相对小的尺寸，并且在使用时被展开以向用户提供相对大的图像。为此，可卷曲显示装置包括收纳装置和可卷曲显示面板。为了达到整体可自由卷曲，OLED模组各叠层需使用柔性材料，提高模组在机构中的卷曲顺滑性。\n\n[0003]通常卷曲OLED显示模组包括柔性屏和包裹柔性屏的外壳，外壳设置有第一卷轴，第一卷轴分别两侧设置有第二卷轴，柔性屏两端分别设置有曲条，曲条用于保护柔性屏，柔性屏远离外壳一侧设置有衔接台，在收缩或伸展过程中第二卷轴用于卷曲曲条，由于柔性屏伸展后尺寸较大，悬挂在墙上上，或者平铺在平面上，大尺寸的柔性屏容易左右晃动，影响显示屏的显示品质，另卷缩或伸展过程中，第一卷轴和第二卷轴分别卷缩柔性屏和曲条，存在误差，造成卷缩或伸展过程的摩擦阻力较大。\n\n[0004]因此，需要设计出一种新的可卷曲柔性显示装置结构，以解决现有技术中可卷曲柔性显示装置的显示面板伸展后刚性较差，收缩或伸展产生摩擦阻力较大的技术问题。\n\n发明内容\n\n[0005]本发明提供一种可卷曲柔性显示装置，能够解决现有技术中可卷曲柔性显示装置的显示面板伸展后刚性较差，收缩或伸展产生摩擦阻力较大的技术问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明实施例提供一种可卷曲柔性显示装置，包括卷轴、柔性显示模组、用于收纳所述卷轴和所述柔性显示模组的外壳；其中，所述柔性显示模组沿着卷曲的方向上设置有腔体，且所述腔体内活动地设置有多个刚性支撑件，相邻所述刚性支撑件之间紧密配合，以对所述腔体和所述柔性显示模组卷曲或伸展的平整性进行支撑。\n\n[0008]根据本发明一优选实施例，所述腔体包括卷缩部和存储部，所述卷缩部和所述存储部连通，所述存储部位于所述外壳内，所述柔性显示模组两侧设置有边框，所述柔性显示模组的背部设置有背框，所述卷缩部位于所述边框内或所述背框内。\n\n[0009]根据本发明一优选实施例，所述刚性支撑件为钢珠，所述钢珠位于所述卷缩部和所述存储部的组合结构内。\n\n[0010]根据本发明一优选实施例，所述腔体内设置有弹性件，所述弹性件与所述刚性支撑件之间采用抵触配合。\n\n[0011]根据本发明一优选实施例，所述弹性件为弹簧或气包中一种或两种组合弹性体。\n\n[0012]根据本发明一优选实施例，所述刚性支撑件表面涂覆有柔性硅胶类材料，所述柔性硅胶类材料具有弹性和预应力。\n\n[0013]根据本发明一优选实施例，所述外壳包括第一子外壳和第二子外壳，所述第一子外壳包括第一卷轴，所述第二子外壳包括第二卷轴，所述柔性显示模组两端分别与所述第一卷轴和所述第二卷轴连接，所述第一卷轴和所述第二卷轴同时卷起所述柔性显示模组，待所述柔性显示模组卷缩完成，所述第一子外壳和所述第二子外壳装配在一起，其中，所述第一子外壳和所述第二子外壳相对设置且形状相同。\n\n[0014]根据本发明一优选实施例，所述第一子外壳远离所述第一卷轴的两侧分别设置有第一存储部和第二存储部，所述第二子外壳远离所述第二卷轴的两侧分别设置有第三存储部和第四存储部，所述卷缩部包括第一卷缩部和第二卷缩部，所述第一存储部、所述第一卷缩部和所述第三存储部导通，所述第二存储部、所述第二卷缩部和所述第四存储部导通。\n\n[0015]根据本发明一优选实施例，所述第一卷缩部和所述第二卷缩部对应所述柔性显示模组的中心线的位置均设置有所述弹性件，所述第一存储部、所述第二存储部、所述第三存储部和所述第四存储部内均设置有所述弹性件。\n\n[0016]根据本发明一优选实施例，所述柔性显示模组为OLED显示模组、Mini-LED显示模组或者Micro-LED显示模组。\n\n[0017]本发明的有益效果：本申请提供了一种可卷曲柔性显示装置，该可卷曲柔性显示装置包括卷轴、柔性显示模组、用于包裹卷轴和柔性显示模组的外壳，柔性显示模组沿着卷曲的方向上设置有腔体，腔体设置有多个可移动的刚性支撑件，刚性支撑件可随柔性显示模组卷曲或伸展，当柔性显示模组展开时，刚性支撑件填补腔体，并依次排列，刚性支撑件还连接有弹性件，在弹性件的弹性作用下，形成一定刚度的支撑体，保护柔性显示模组的边框；当柔性显示模组卷曲时，刚性支撑件随柔性显示模组卷曲到卷轴上时可进入外壳内，可提高可卷曲柔性显示装置的显示面板伸展后刚性，降低伸展和收缩时产生摩擦阻力。\n\n附图说明\n\n[0018]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1为本申请提供一种可卷曲柔性显示装置外观示意图。\n\n[0020]图2为本申请提供一种可卷曲柔性显示装置展开结构示意图。\n\n[0021]图3为本申请提供一种可卷曲柔性显示装置详细结构示意图。\n\n[0022]图4为本申请提供一种可卷曲柔性显示装置中的刚性支撑件收纳腔截面结构示意图。\n\n具体实施方式\n\n[0023]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示，图中虚线表示在结构中并不存在的，仅仅说明结构的形状和位置。\n\n[0024]本发明针对现有技术中可卷曲柔性显示装置的显示面板伸展后刚性较差，收缩或伸展产生摩擦阻力较大的技术问题，本实施例能够解决该缺陷。\n\n[0025]本发明实施例提供一种可卷曲柔性显示装置，包括卷轴、柔性显示模组、用于包裹卷轴和柔性显示模组的外壳，所述柔性显示模组沿着卷曲的方向上设置有腔体，且所述腔体内活动地设置有多个刚性支撑件，相邻所述刚性支撑件之间紧密配合，以对所述腔体和所述柔性显示模组卷曲或伸展的平整性进行支撑。柔性显示模组优选为OLED显示模组、Mini-LED显示模组或者Micro-LED显示模组。柔性显示模组沿着卷曲的方向上设置有腔体，腔体内活动地设置有多个的刚性支撑件，刚性支撑件可随柔性显示模组卷曲或伸展，刚性支撑件可提高柔性显示模组的刚性，提高柔性显示模组的稳定性。\n\n[0026]所述腔体包括卷缩部和存储部，所述卷缩部和所述存储部连通，所述存储部位于所述外壳内，所述柔性显示模组两侧设置有边框，所述柔性显示模组的背部设置有背框，所述卷缩部位于所述边框内或所述背框内。本实施例中的存储部位于远离卷轴的两侧的外壳内，卷缩部和存储部内均设置弹性件，弹性件与刚性支撑件之间采用抵触配合。当柔性显示模组慢慢随着卷轴伸展时，压缩弹性件慢慢舒展，将收纳腔中刚性支撑件慢慢输入到腔体内，以使刚性支撑件依次连续排列在腔体中，以增加腔体内的刚性支撑件的密集程度。当柔性显示模组慢慢随着卷轴卷缩时，弹性件被压缩，刚性支撑件慢慢从腔体进入收纳腔。刚性支撑件优选为钢珠，钢珠表面涂覆有柔性硅胶类材料，柔性硅胶类材料具有弹性和预应力，弹性件优选包括弹簧和气包一种或两种组合结构。\n\n[0027]具体地，如图1和图2所示，本发明实施例提供一种可卷曲柔性显示装置100外观示意图，可卷曲柔性显示装置100包括柔性显示模组101、第一子外壳102以及第二子外壳103，柔性显示模组101两端分别与第一子外壳102和第二子外壳103连接，柔性显示模组101可同时存放在第一子外壳102和第二子外壳103内，第一子外壳102和第二子外壳103结构优选相同，合拢在一起后，形成一个整体，确保可卷曲柔性显示装置100外观平整且美观。\n\n[0028]柔性显示模组101两侧设置有第一边框1011和第二边框1012，腔体包括第一腔体和第二腔体，第一腔体包括第一卷缩部1041、位于第一卷缩部1041两侧的第一存储部和第三存储部(图中未画出)，第一卷缩部1041、第一存储部和第三存储部处于导通状态，第二腔体包括第二卷缩部1042、位于第二卷缩部1042两侧的第二存储部和第四存储部(图中未画出)，第二卷缩部1042、第二存储部和第四存储部处于导通状态，柔性显示模组101设置有第一边框1011和第二边框1012，第一卷缩部1041位于第一边框1011内，第二卷缩部1042位于第二边框1012内。本实施例中的第一卷缩部1041和第二卷缩部1042两端均延伸至第一子外壳102以及第二子外壳103内，且第一子外壳102内对应第一存储部和第三存储部的端部均设置有弹性件105，第二子外壳103内对应第二存储部和第四存储部的端部均设置有弹性件105，弹性件105优选弹簧和气包一种或两种组合结构。\n\n[0029]如图3所示，本发明实施例提供一种可卷曲柔性显示装置100的详细结构示意图，第一子外壳102设置有第一卷轴1021，第二子外壳103设置有第二卷轴1031，柔性显示模组101两端分别与第一卷轴1021和第二卷轴连接1031，第一卷轴1021和第二卷轴1031以相反的方向同时卷起柔性显示模组101，第一卷轴1021和第二卷轴1031优选采用大小相同的角速度，提高了柔性显示模组101卷缩的效率，第一子外壳102和第二子外壳103相对设置且形状相同，待柔性显示模组101卷缩完成，第一子外壳102和第二子外壳103合拢并组装完成。本实施例中的第一卷轴1021的角速度为ω1，第二卷轴1031的角速度为ω2，ω1优选等于ω2。\n\n[0030]第一子外壳102对应第一卷轴1021两侧分别设置有第一存储部1022和第三存储1023，第二子外壳103对应第二卷轴1031两侧分别设置有第二存储部1032和第四存储1033，本实施例中的柔性显示模组101两侧设置有第一边框1011和第二边框1012，第一边框1011内设置有第一卷缩部1041，第二边框1012内设置有第二卷缩部1042，第一卷缩部1041和第二卷缩部1042均依次排列有刚性支撑件104，本实施例中第一卷缩部1041和第二卷缩部1042两侧均延伸至第一子外壳102以及第二子外壳103内，且第一子外壳102内对应第一存储部1022和第三存储部1023的端部均设置有弹性件105，第二子外壳103内对应第二存储部1032和第四存储部1033的端部均设置有弹性件105，本实施例中的第一卷缩部1041和第二卷缩部1042分别与第一边框1011和第二边框1012的长度相等。第一卷缩部1041、第一存储部1022和第三存储部1032处于导通状态，第二卷缩部1042、第二存储部1032和第四存储部1033处于导通状态。\n\n[0031]第一存储部1022、第三存储部1032、第二存储部1032和第四存储部1033均设置有弹性件105，弹性件105优选弹簧和气包一种或两种组合结构。本实施例中的第一卷缩部1041和第二卷缩部1042分别对应第一边框1011和第二边框1012的中心位置也设置有弹性件105。当柔性显示模组101慢慢随着第一卷轴1021和第二卷轴1031伸展时，压缩在存储部中的弹性件105慢慢舒展，将存储部中刚性支撑件慢慢输入到卷缩部内，以使刚性支撑件104连续排列在卷缩部中，以增加腔体内的刚性支撑件的密集程度。\n\n[0032]当柔性显示模组101慢慢随着第一卷轴1021和第二卷轴连接1031卷缩时，在存储部中的弹性件105被压缩，第一腔体和第二腔体分别对应第一边框1011和第二边框1012的中心位置的弹性件105被拉伸，刚性支撑件104慢慢从卷缩部进入存储部。刚性支撑件104表面涂覆有柔性硅胶类材料，柔性硅胶类材料具有弹性和预应力，可以缓冲刚性支撑件104碰撞的应力。\n\n[0033]如图4所示，本发明实施例提供一种可卷曲柔性显示装置中的刚性支撑件的收纳腔截面结构示意图。刚性支撑构104为钢珠。刚性支撑构104阵列分布在第一存储部1022和第三存储部1032，刚性支撑构104之间设置有弹性件105，弹性件105与刚性支撑构104采用抵触配合。刚性支撑构104表面涂覆有柔性硅胶类材料，柔性硅胶类材料具有弹性和预应力。\n\n[0034]本申请提供了一种可卷曲柔性显示装置，该可卷曲柔性显示装置包括卷轴、柔性显示模组、用于包裹卷轴和柔性显示模组的外壳，柔性显示模组沿着卷曲的方向上设置有腔体，腔体设置有多个可移动的刚性支撑件，刚性支撑件可随柔性显示模组卷曲或伸展，当柔性显示模组展开时，刚性支撑件填补腔体，并依次排列，刚性支撑件还连接有弹性件，在弹性件的弹性作用下，形成一定刚度的支撑体，保护柔性显示模组的边框；当柔性显示模组卷曲时，刚性支撑件随柔性显示模组卷曲到卷轴上时可进入外壳内，可提高可卷曲柔性显示装置的显示面板伸展后刚性，降低伸展和收缩时产生摩擦阻力。\n\n[0035]综上，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及显示面板制造技术领域，尤其涉及一种可卷曲柔性显示装置。\n\n背景技术\n\n[0002]可卷曲OLED显示装置作为一种新型显示科技的产品，未来将全球面板模组厂商创新发展的方向。可卷曲显示装置在携带时被卷曲以实现相对小的尺寸，并且在使用时被展开以向用户提供相对大的图像。为此，可卷曲显示装置包括收纳装置和可卷曲显示面板。为了达到整体可自由卷曲，OLED模组各叠层需使用柔性材料，提高模组在机构中的卷曲顺滑性。\n\n[0003]通常卷曲OLED显示模组包括柔性屏和包裹柔性屏的外壳，外壳设置有第一卷轴，第一卷轴分别两侧设置有第二卷轴，柔性屏两端分别设置有曲条，曲条用于保护柔性屏，柔性屏远离外壳一侧设置有衔接台，在收缩或伸展过程中第二卷轴用于卷曲曲条，由于柔性屏伸展后尺寸较大，悬挂在墙上上，或者平铺在平面上，大尺寸的柔性屏容易左右晃动，影响显示屏的显示品质，另卷缩或伸展过程中，第一卷轴和第二卷轴分别卷缩柔性屏和曲条，存在误差，造成卷缩或伸展过程的摩擦阻力较大。\n\n[0004]因此，需要设计出一种新的可卷曲柔性显示装置结构，以解决现有技术中可卷曲柔性显示装置的显示面板伸展后刚性较差，收缩或伸展产生摩擦阻力较大的技术问题。\n\n发明内容\n\n[0005]本发明提供一种可卷曲柔性显示装置，能够解决现有技术中可卷曲柔性显示装置的显示面板伸展后刚性较差，收缩或伸展产生摩擦阻力较大的技术问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明实施例提供一种可卷曲柔性显示装置，包括卷轴、柔性显示模组、用于收纳所述卷轴和所述柔性显示模组的外壳；其中，所述柔性显示模组沿着卷曲的方向上设置有腔体，且所述腔体内活动地设置有多个刚性支撑件，相邻所述刚性支撑件之间紧密配合，以对所述腔体和所述柔性显示模组卷曲或伸展的平整性进行支撑。\n\n[0008]根据本发明一优选实施例，所述腔体包括卷缩部和存储部，所述卷缩部和所述存储部连通，所述存储部位于所述外壳内，所述柔性显示模组两侧设置有边框，所述柔性显示模组的背部设置有背框，所述卷缩部位于所述边框内或所述背框内。\n\n[0009]根据本发明一优选实施例，所述刚性支撑件为钢珠，所述钢珠位于所述卷缩部和所述存储部的组合结构内。\n\n[0010]根据本发明一优选实施例，所述腔体内设置有弹性件，所述弹性件与所述刚性支撑件之间采用抵触配合。\n\n[0011]根据本发明一优选实施例，所述弹性件为弹簧或气包中一种或两种组合弹性体。\n\n[0012]根据本发明一优选实施例，所述刚性支撑件表面涂覆有柔性硅胶类材料，所述柔性硅胶类材料具有弹性和预应力。\n\n[0013]根据本发明一优选实施例，所述外壳包括第一子外壳和第二子外壳，所述第一子外壳包括第一卷轴，所述第二子外壳包括第二卷轴，所述柔性显示模组两端分别与所述第一卷轴和所述第二卷轴连接，所述第一卷轴和所述第二卷轴同时卷起所述柔性显示模组，待所述柔性显示模组卷缩完成，所述第一子外壳和所述第二子外壳装配在一起，其中，所述第一子外壳和所述第二子外壳相对设置且形状相同。\n\n[0014]根据本发明一优选实施例，所述第一子外壳远离所述第一卷轴的两侧分别设置有第一存储部和第二存储部，所述第二子外壳远离所述第二卷轴的两侧分别设置有第三存储部和第四存储部，所述卷缩部包括第一卷缩部和第二卷缩部，所述第一存储部、所述第一卷缩部和所述第三存储部导通，所述第二存储部、所述第二卷缩部和所述第四存储部导通。\n\n[0015]根据本发明一优选实施例，所述第一卷缩部和所述第二卷缩部对应所述柔性显示模组的中心线的位置均设置有所述弹性件，所述第一存储部、所述第二存储部、所述第三存储部和所述第四存储部内均设置有所述弹性件。\n\n[0016]根据本发明一优选实施例，所述柔性显示模组为OLED显示模组、Mini-LED显示模组或者Micro-LED显示模组。\n\n[0017]本发明的有益效果：本申请提供了一种可卷曲柔性显示装置，该可卷曲柔性显示装置包括卷轴、柔性显示模组、用于包裹卷轴和柔性显示模组的外壳，柔性显示模组沿着卷曲的方向上设置有腔体，腔体设置有多个可移动的刚性支撑件，刚性支撑件可随柔性显示模组卷曲或伸展，当柔性显示模组展开时，刚性支撑件填补腔体，并依次排列，刚性支撑件还连接有弹性件，在弹性件的弹性作用下，形成一定刚度的支撑体，保护柔性显示模组的边框；当柔性显示模组卷曲时，刚性支撑件随柔性显示模组卷曲到卷轴上时可进入外壳内，可提高可卷曲柔性显示装置的显示面板伸展后刚性，降低伸展和收缩时产生摩擦阻力。\n\n附图说明\n\n[0018]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1为本申请提供一种可卷曲柔性显示装置外观示意图。\n\n[0020]图2为本申请提供一种可卷曲柔性显示装置展开结构示意图。\n\n[0021]图3为本申请提供一种可卷曲柔性显示装置详细结构示意图。\n\n[0022]图4为本申请提供一种可卷曲柔性显示装置中的刚性支撑件收纳腔截面结构示意图。\n\n具体实施方式\n\n[0023]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示，图中虚线表示在结构中并不存在的，仅仅说明结构的形状和位置。\n\n[0024]本发明针对现有技术中可卷曲柔性显示装置的显示面板伸展后刚性较差，收缩或伸展产生摩擦阻力较大的技术问题，本实施例能够解决该缺陷。\n\n[0025]本发明实施例提供一种可卷曲柔性显示装置，包括卷轴、柔性显示模组、用于包裹卷轴和柔性显示模组的外壳，所述柔性显示模组沿着卷曲的方向上设置有腔体，且所述腔体内活动地设置有多个刚性支撑件，相邻所述刚性支撑件之间紧密配合，以对所述腔体和所述柔性显示模组卷曲或伸展的平整性进行支撑。柔性显示模组优选为OLED显示模组、Mini-LED显示模组或者Micro-LED显示模组。柔性显示模组沿着卷曲的方向上设置有腔体，腔体内活动地设置有多个的刚性支撑件，刚性支撑件可随柔性显示模组卷曲或伸展，刚性支撑件可提高柔性显示模组的刚性，提高柔性显示模组的稳定性。\n\n[0026]所述腔体包括卷缩部和存储部，所述卷缩部和所述存储部连通，所述存储部位于所述外壳内，所述柔性显示模组两侧设置有边框，所述柔性显示模组的背部设置有背框，所述卷缩部位于所述边框内或所述背框内。本实施例中的存储部位于远离卷轴的两侧的外壳内，卷缩部和存储部内均设置弹性件，弹性件与刚性支撑件之间采用抵触配合。当柔性显示模组慢慢随着卷轴伸展时，压缩弹性件慢慢舒展，将收纳腔中刚性支撑件慢慢输入到腔体内，以使刚性支撑件依次连续排列在腔体中，以增加腔体内的刚性支撑件的密集程度。当柔性显示模组慢慢随着卷轴卷缩时，弹性件被压缩，刚性支撑件慢慢从腔体进入收纳腔。刚性支撑件优选为钢珠，钢珠表面涂覆有柔性硅胶类材料，柔性硅胶类材料具有弹性和预应力，弹性件优选包括弹簧和气包一种或两种组合结构。\n\n[0027]具体地，如图1和图2所示，本发明实施例提供一种可卷曲柔性显示装置100外观示意图，可卷曲柔性显示装置100包括柔性显示模组101、第一子外壳102以及第二子外壳103，柔性显示模组101两端分别与第一子外壳102和第二子外壳103连接，柔性显示模组101可同时存放在第一子外壳102和第二子外壳103内，第一子外壳102和第二子外壳103结构优选相同，合拢在一起后，形成一个整体，确保可卷曲柔性显示装置100外观平整且美观。\n\n[0028]柔性显示模组101两侧设置有第一边框1011和第二边框1012，腔体包括第一腔体和第二腔体，第一腔体包括第一卷缩部1041、位于第一卷缩部1041两侧的第一存储部和第三存储部(图中未画出)，第一卷缩部1041、第一存储部和第三存储部处于导通状态，第二腔体包括第二卷缩部1042、位于第二卷缩部1042两侧的第二存储部和第四存储部(图中未画出)，第二卷缩部1042、第二存储部和第四存储部处于导通状态，柔性显示模组101设置有第一边框1011和第二边框1012，第一卷缩部1041位于第一边框1011内，第二卷缩部1042位于第二边框1012内。本实施例中的第一卷缩部1041和第二卷缩部1042两端均延伸至第一子外壳102以及第二子外壳103内，且第一子外壳102内对应第一存储部和第三存储部的端部均设置有弹性件105，第二子外壳103内对应第二存储部和第四存储部的端部均设置有弹性件105，弹性件105优选弹簧和气包一种或两种组合结构。\n\n[0029]如图3所示，本发明实施例提供一种可卷曲柔性显示装置100的详细结构示意图，第一子外壳102设置有第一卷轴1021，第二子外壳103设置有第二卷轴1031，柔性显示模组101两端分别与第一卷轴1021和第二卷轴连接1031，第一卷轴1021和第二卷轴1031以相反的方向同时卷起柔性显示模组101，第一卷轴1021和第二卷轴1031优选采用大小相同的角速度，提高了柔性显示模组101卷缩的效率，第一子外壳102和第二子外壳103相对设置且形状相同，待柔性显示模组101卷缩完成，第一子外壳102和第二子外壳103合拢并组装完成。本实施例中的第一卷轴1021的角速度为ω1，第二卷轴1031的角速度为ω2，ω1优选等于ω2。\n\n[0030]第一子外壳102对应第一卷轴1021两侧分别设置有第一存储部1022和第三存储1023，第二子外壳103对应第二卷轴1031两侧分别设置有第二存储部1032和第四存储1033，本实施例中的柔性显示模组101两侧设置有第一边框1011和第二边框1012，第一边框1011内设置有第一卷缩部1041，第二边框1012内设置有第二卷缩部1042，第一卷缩部1041和第二卷缩部1042均依次排列有刚性支撑件104，本实施例中第一卷缩部1041和第二卷缩部1042两侧均延伸至第一子外壳102以及第二子外壳103内，且第一子外壳102内对应第一存储部1022和第三存储部1023的端部均设置有弹性件105，第二子外壳103内对应第二存储部1032和第四存储部1033的端部均设置有弹性件105，本实施例中的第一卷缩部1041和第二卷缩部1042分别与第一边框1011和第二边框1012的长度相等。第一卷缩部1041、第一存储部1022和第三存储部1032处于导通状态，第二卷缩部1042、第二存储部1032和第四存储部1033处于导通状态。\n\n[0031]第一存储部1022、第三存储部1032、第二存储部1032和第四存储部1033均设置有弹性件105，弹性件105优选弹簧和气包一种或两种组合结构。本实施例中的第一卷缩部1041和第二卷缩部1042分别对应第一边框1011和第二边框1012的中心位置也设置有弹性件105。当柔性显示模组101慢慢随着第一卷轴1021和第二卷轴1031伸展时，压缩在存储部中的弹性件105慢慢舒展，将存储部中刚性支撑件慢慢输入到卷缩部内，以使刚性支撑件104连续排列在卷缩部中，以增加腔体内的刚性支撑件的密集程度。\n\n[0032]当柔性显示模组101慢慢随着第一卷轴1021和第二卷轴连接1031卷缩时，在存储部中的弹性件105被压缩，第一腔体和第二腔体分别对应第一边框1011和第二边框1012的中心位置的弹性件105被拉伸，刚性支撑件104慢慢从卷缩部进入存储部。刚性支撑件104表面涂覆有柔性硅胶类材料，柔性硅胶类材料具有弹性和预应力，可以缓冲刚性支撑件104碰撞的应力。\n\n[0033]如图4所示，本发明实施例提供一种可卷曲柔性显示装置中的刚性支撑件的收纳腔截面结构示意图。刚性支撑构104为钢珠。刚性支撑构104阵列分布在第一存储部1022和第三存储部1032，刚性支撑构104之间设置有弹性件105，弹性件105与刚性支撑构104采用抵触配合。刚性支撑构104表面涂覆有柔性硅胶类材料，柔性硅胶类材料具有弹性和预应力。\n\n[0034]本申请提供了一种可卷曲柔性显示装置，该可卷曲柔性显示装置包括卷轴、柔性显示模组、用于包裹卷轴和柔性显示模组的外壳，柔性显示模组沿着卷曲的方向上设置有腔体，腔体设置有多个可移动的刚性支撑件，刚性支撑件可随柔性显示模组卷曲或伸展，当柔性显示模组展开时，刚性支撑件填补腔体，并依次排列，刚性支撑件还连接有弹性件，在弹性件的弹性作用下，形成一定刚度的支撑体，保护柔性显示模组的边框；当柔性显示模组卷曲时，刚性支撑件随柔性显示模组卷曲到卷轴上时可进入外壳内，可提高可卷曲柔性显示装置的显示面板伸展后刚性，降低伸展和收缩时产生摩擦阻力。\n\n[0035]综上，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10907, 23961, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种柔性显示模组。\n\n背景技术\n\n[0002]目前，柔性有机发光二极管显示模组的重要特征之一在于可弯曲。对于包括具有固定曲率的3D保护盖板和柔性有机发光二极管显示面板的柔性有机发光二极管显示模组，柔性有机发光二极管面板与3D保护盖板通过固化的紫外(Ultraviolet，UV)光学胶粘接。然而，在3D保护盖板与柔性有机发光二极管显示面板贴合过程中或者可靠性测试过程中，柔性有机发光二极管显示面板中的无机层由于所受弯曲张应力过大而产生裂纹，裂纹进一步导致柔性有机发光二极管显示面板发生显示功能失效的问题。\n\n[0003]因此，有必要提出一种技术方案以解决上述柔性有机发光二极管显示模组在贴合过程中或者可靠性测试过程中由于无机层产生裂纹导致显示功能失效的问题。\n\n发明内容\n\n[0004]本发明的目的在于提供一种柔性显示模组，以解决柔性有机发光二极管显示模组在贴合过程中或者可靠性测试过程中由于无机层产生裂纹导致显示功能失效的问题。\n\n[0005]为实现上述目的，技术方案如下：\n\n[0006]一种柔性显示模组，所述柔性显示模组具有弯曲区和与所述弯曲区相邻的平面区，所述柔性显示模组包括：\n\n[0007]柔性显示面板；\n\n[0008]保护盖板；以及\n\n[0009]透明胶层，所述透明胶层粘接所述柔性显示面板和所述保护盖板，且所述透明胶层对应所述弯曲区的至少一部分的存储模量小于所述透明胶层对应所述平面区的至少一部分的存储模量。\n\n[0010]有益效果：本发明提供一种柔性显示模组，通过使透明胶层对应弯曲区的至少一部分的存储模量小于透明胶层对应平面区的至少一部分的存储模量，减小透明胶层由于弯曲受回复力作用而与柔性显示面板之间界面处产生的切向拉应力，改善大曲率状态下的柔性显示面板的膜层产生裂纹以及膜层剥离的概率，保证了产品的可靠性。\n\n附图说明\n\n[0011]图1为本发明实施例的柔性显示模组的示意图；\n\n[0012]图2为图1所示柔性显示面板的示意图；\n\n[0013]图3为3M系列CF3006型UV胶在不同固化率时对应的储能模量。\n\n具体实施方式\n\n[0014]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0015]在传统技术中，会利用UV型光学胶将柔性显示面板与3D玻璃保护盖板贴合在一起。在贴合、加压脱泡后，利用发出特定波长的紫外光的UV灯源对UV型光学胶进行固化，使UV型光学胶的胶体内部产生分子链聚合，加强UV型光学胶与3D玻璃保护盖板、柔性显示面板之间界面的附著力，且使胶体模量提升。一般，为确保UV型光学胶与3D玻璃保护盖板之间的界面处以及UV型光学胶与柔性显示面板之间界面处的附著力相同，UV型光学胶对应平面区域的部分与UV型光学胶对应弯曲区域的部分皆需要同等的紫外光能量进行照射以达成均质的固化率。然而，UV型光学胶在整面固化后的低蠕变、高模量特性对于大曲率3D玻璃保护盖板制备得到的柔性显示模组的贴合良率及可靠性测试良率均较低。\n\n[0016]针对传统技术的问题，本发明通过使粘接保护盖板和柔性显示面板的透明胶层对应弯曲区的部分的存储模量小于透明胶层对应平面区的部分的存储模量，减小透明胶层对应弯曲区的部分由于弯曲产生的回复力，减小透明胶层由于受回复力而作用于柔性显示面板时在与柔性显示面板之间的界面处产生的拉应力，进而改善柔性显示面板由于受拉应力过大而出现裂纹的现象。另外，透明胶层对应平面区的部分的胶体模量较大，在平面区仍维持透明胶层的固有机械特性，较大的胶模量可使柔性显示模组在平面区能承受较大的耐压，且达到抗变形印痕的水准。\n\n[0017]另外，尽管传统柔性显示面板中也包括胶层，例如后盖板与有机发光二极管显示面板之间设置有胶层，偏光片与有机发光二极管显示面板之间也设置有胶层，由于这些胶层的厚度一般在20微米-30微米左右，即这些胶层的厚度较薄，降低这些胶层对应弯曲区的存储模量对降低柔性显示面板对应弯曲区的部分所受的应力的贡献较少。而保护盖板和柔性显示面板之间的透明胶层的厚度较厚，将保护盖板和柔性显示面板之间的透明胶层对应弯曲区的部分的存储模量降低，对降低柔性显示面板对应弯曲区的部分所受的应力的贡献较明显。\n\n[0018]请参阅图1，其为本发明实施例的柔性显示模组的示意图。柔性显示模组100具有一个平面区100a以及位于平面区100a相对两侧的弯曲区100b，弯曲区100b与平面区100a相邻。柔性显示模组100包括柔性显示面板10、保护盖板20以及透明胶层30。透明胶层30粘接柔性显示面板10和保护盖板20。\n\n[0019]如图2所示，其为图1所示柔性显示面板的示意图。柔性显示面板10包括依次叠置的散热层101、后盖板102、有机发光二极管显示面板103以及偏光片104。其中，偏光片104靠近透明胶层30设置，散热层101远离透明胶层30设置。\n\n[0020]在本实施例中，有机发光二极管显示面板103用于显示画面。有机发光二极管显示面板103包括依次叠置的薄膜晶体管阵列层、有机发光二极管阵列层以及薄膜封装层。其中，薄膜晶体管阵列层包括多个阵列排布的薄膜晶体管。薄膜晶体管阵列层包括多个图案化金属层以及多个绝缘层，多个绝缘层包括无机绝缘层和有机绝缘层。有机发光二极管阵列层包括多个阵列排布的有机发光二极管，有机发光二极管包括阴极、阳极以及设置于阴极和阳极之间的有机发光层。薄膜封装层包括两个无机绝缘层以及位于两个无机绝缘层之间的有机绝缘层。无机绝缘层的制备材料选自氮化硅或者氧化硅中的至少一种，有机绝缘层的制备材料选自聚酰亚胺或者丙烯酸酯。由于有机发光二极管显示面板包括无机绝缘层，有机发光二极管显示面板经过贴合弯曲后，无机绝缘层受弯曲张应力的作用。若无机绝缘层受弯曲张应力过大则会出现裂纹，导致有机发光二极管显示面板的显示功能失效。\n\n[0021]在本实施例中，偏光片104为圆偏光片，用于降低对环境光的反射。后盖板102为柔性聚合物层，后盖板102用于保护有机发光二极管显示面板103的背面。散热层101起到散热的作用。散热层101包括泡沫层1012以及导热金属层1011，泡沫层1012设置于导热金属层1011和后盖板102之间。导热金属层1011为铜箔。\n\n[0022]在本实施例中，保护盖板20用于保护偏光片104以及有机发光二极管显示面板103。保护盖板20为三维(3D)玻璃盖板。保护盖板20是透明的。保护盖板20对应平面区100a的部分为平面部，保护盖板20对应弯曲区100b的部分为圆弧弯曲部。保护盖板20对应弯曲区100b的部分的弧度α大于90度且小于180度，使得柔性显示模组100具有大曲率。具体地，保护盖板20对应弯曲区100b的部分的弧度α为100度、105度、110度、120度、130度、140度、150度或者175度。\n\n[0023]在本实施例中，透明胶层30对应弯曲区100b的至少一部分的存储模量小于透明胶层30对应平面区100a的至少一部分的存储模量，减小透明胶层30由于弯曲受回复力作用而与柔性显示面板10之间界面处产生的切向拉应力，使得柔性显示面板10的弯曲部分所受拉应力减小，降低大曲率状态下的柔性显示面板的无机膜层产生裂纹以及膜层剥离的概率。\n\n[0024]需要说明的是，图1所示透明胶层30所受的切向拉应力σ＝(ε1+ε2v)Y/2(1-v2)，其中，v为泊松比，Y为透明胶层的存储模量，ε1为第一应变，ε2为第二应变，第一应变的方向与第二应变的方向垂直，切向拉应力σ的方向与第一应变的方向相同。在柔性显示模组的厚度一定且弯曲半径一定的情况下，ε1和ε2均为定值。可知，切向拉应力与透明胶层30的存储模量成正比，若透明胶层30的存储模量越大，则切向拉应力σ越大。\n\n[0025]在本实施例中，透明胶层30对应平面区100a的部分的存储模量与透明胶层30对应弯曲区100b的部分的存储模量的差值与透明胶层30对应平面区100a的部分的存储模量的比值百分数大于或等于30％且小于100％，以使得透明胶层30对应平面区100a的部分的存储模量较大以具有足够的机械性能，且透明胶层30对应弯曲区的存储模量较小以减小柔性显示面板10对应弯曲区的部分受的切向拉应力。例如，该比值百分数可以为35％、40％、45％、50％、60％、80％、85％或者90％。\n\n[0026]具体地，透明胶层30对应平面区100a的部分的存储模量大于或等于115kPa，以使得透明胶层30对应平面区100a的部分具有固有机械特性，使得柔性显示模组在平面区100a能承受较大的耐压、抗变形印痕的水准。透明胶层30对应弯曲区100b的部分的存储模量大于或等于20kPa且小于或等于80kPa，以使得透明胶层30对应弯曲区100b的部分具有良好的形变能力(包括蠕变性能)的同时，保证透明胶层30在保护盖板20与柔性显示面板10之间起到一定的粘接作用，还能满足柔性显示模组在低弯曲半径下对透明胶层30的存储模量的要求。具体地，透明胶层30对应平面区100a的部分的存储模量为可以为118kPa、120kPa、130kPa、150kPa、200kPa或者200kPa以上；透明胶层30对应弯曲区100b的部分的存储模量可以为20kPa、25kPa、30kPa、40kPa、55kPa、60kPa、65kPa或者70kPa。\n\n[0027]在本实施例中，透明胶层30为紫外固化胶，紫外固化胶的制备材料为丙烯酸酯及其衍生物。透明胶层30对应弯曲区100b的部分的固化率小于透明胶层30对应平面区100a的部分的固化率，以使得透明胶层30对应弯曲区100b的部分的存储模量小于透明胶层30对应平面区100a的部分的存储模量。降低弯曲区100b的胶层固化程度，以致该区域胶体维持较软的程度，即该区域胶体的模量降低、蠕变大，以降低了柔性显示面板在弯曲区100b受的拉应力，进而改善大曲率状态下的柔性显示面板的膜层裂纹、剥离概率，保证了产品的可靠性。同时，在平面区100a的透明胶层30维持较高的固化率，使得平面区100a的透明胶层30仍维持透明胶层30的固有机械特性，较大的胶模量可使柔性显示模组在平面区能承受较大的耐压、抗变形印痕的水准，且避免透明胶层30对应平面区100a的部分固化率低导致透明胶层30对应的平面区100a的部分容易产生气泡而影响外观。\n\n[0028]需要说明的是，透明胶层30对应弯曲区100b的部分的固化率与透明胶层30对应平面区100a的部分的固化率不同可以有很多种方式实现。例如，调节用于发出紫外光的灯珠的数量，和/或，调节发出紫外光的灯珠之间的间距，和/或，调节发出紫外光的灯珠的功率。或者，将柔性显示模组100的透明胶层30对应弯曲区100b的部分与柔性显示模组100对应平面区100a的部分分别固化。\n\n[0029]在本实施例中，透明胶层30对应弯曲区100b的部分的固化率大于或等于0％且小于80％，使得透明胶层30对应弯曲区100b的部分具有较低的存储模量的同时，保证透明胶层30对应弯曲区100b的部分几乎不存在气泡，且保证透明胶层30对应弯曲区100b的部分具有足够的粘接力。透明胶层30对应平面区100a的部分的固化率大于或等于80％，以使得透明胶层30具有较大的存储模量，且减少透明胶层30对应平面区100a的部分固化后存在的气泡。透明胶层30的固化率大于或等于80％，透明胶层30基本完全固化。透明胶层30对应弯曲区100b的部分的固化率可以为0％、5％、10％、15％、20％、25％、30％或者40％。透明胶层30对应平面区100a的部分的固化率可以为80％、85％、88％或者90％。\n\n[0030]在本实施例中，透明胶层30对应弯曲区100b的部分的固化率为35％-45％，透明胶层30对应平面区100a的部分的固化率为75％-85％，以降低弯曲区100b的柔性显示面板10出现裂纹的概率的同时，提高柔性显示模组的平面区100a的机械性能，且使得透明胶层30对应平面区100a和弯曲区100b的部分在可靠性测试后出现气泡的概率均为0，提高柔性显示模组的可靠性。具体地，透明胶层30对应弯曲区100b的部分的固化率为40％，透明胶层30对应平面区100a的部分的固化率为80％。\n\n[0031]在本实施例中，透明胶层30的厚度为100微米-150微米，例如透明胶层30的厚度为110微米、120微米、130微米或者140微米。透明胶层30的厚度越薄，越有利于降低柔性显示面板10对应弯曲区100b的部分所受的应力。\n\n[0032]在本实施例中，柔性显示模组100对应弯曲区100b的半径为2毫米-5毫米，例如弯曲半径为3毫米或者4毫米。弯曲半径越大，越有利于降低柔性显示面板10对应弯曲区100b的部分所受的应力。\n\n[0033]请参阅表1，表1为130度的倒扣玻璃保护盖板和柔性显示面板通过3M系列CF3006型UV胶贴合时不同UV固化率对应的贴合裂纹百分比以及不同UV固化率的UV胶贴合后的柔性显示模组进行可靠性测试后的测试结果。其中，可靠性测试的条件为温度85度，湿度为85，且测试时间为240h。\n\n[0034]表1\n\n[0035]\n\n[0036]由表1可知，贴合过程中，UV胶的固化率为40％对应的贴合裂纹百分比比UV胶的固化率为80％对应的贴合裂纹百分比低8％，故UV固化胶的固化率低更有利于降低贴合过程中的裂纹产生概率。另外，对于可靠性测试，UV胶的固化率为40％时，会导致柔性显示模组的平面区出现气泡的概率为100％，而柔性显示模组对应弯曲区的部分不会产生气泡，故UV胶固化率较低会导致柔性显示膜层对应平面区气泡较多，但不会导致弯曲区出现气泡。UV胶的固化率为80％时，会导致柔性显示面板出现裂纹的百分比相较于UV胶的固化率为40％时增加20％，故弯曲区的UV胶的固化率较大不利于降低柔性显示面板出现裂纹的概率。\n\n[0037]请参阅图3，其为3M系列CF3006型UV胶在不同固化率时对应的储能模量。图3的横坐标为UV胶的固化率，图3的左侧纵坐标为胶体的固化率对应的储能模量，图3的右侧纵坐标为胶体的固化率对应的储能模量与胶体固化率为90％对应的储能模量的比值百分数。由图3可知，随着UV胶的固化率从10％增加至90％，固化后的胶层的储能模量递增。\n\n[0038]另外，结合图3和表1可知，固化率为40％时，固化后的胶层的储能模量为80kPa；固化率为80％时，固化后的胶层的储能模量为115kPa左右。故UV胶对应弯曲区的存储模量为80kPa且UV胶对应平面区的存储模量为115kPa，可以保证柔性显示模组的平面区无气泡且UV胶层存储模量高的同时，柔性显示模组的弯曲区出现裂纹的概率明显降低。\n\n[0039]以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种柔性显示模组。\n\n背景技术\n\n[0002]目前，柔性有机发光二极管显示模组的重要特征之一在于可弯曲。对于包括具有固定曲率的3D保护盖板和柔性有机发光二极管显示面板的柔性有机发光二极管显示模组，柔性有机发光二极管面板与3D保护盖板通过固化的紫外(Ultraviolet，UV)光学胶粘接。然而，在3D保护盖板与柔性有机发光二极管显示面板贴合过程中或者可靠性测试过程中，柔性有机发光二极管显示面板中的无机层由于所受弯曲张应力过大而产生裂纹，裂纹进一步导致柔性有机发光二极管显示面板发生显示功能失效的问题。\n\n[0003]因此，有必要提出一种技术方案以解决上述柔性有机发光二极管显示模组在贴合过程中或者可靠性测试过程中由于无机层产生裂纹导致显示功能失效的问题。\n\n发明内容\n\n[0004]本发明的目的在于提供一种柔性显示模组，以解决柔性有机发光二极管显示模组在贴合过程中或者可靠性测试过程中由于无机层产生裂纹导致显示功能失效的问题。\n\n[0005]为实现上述目的，技术方案如下：\n\n[0006]一种柔性显示模组，所述柔性显示模组具有弯曲区和与所述弯曲区相邻的平面区，所述柔性显示模组包括：\n\n[0007]柔性显示面板；\n\n[0008]保护盖板；以及\n\n[0009]透明胶层，所述透明胶层粘接所述柔性显示面板和所述保护盖板，且所述透明胶层对应所述弯曲区的至少一部分的存储模量小于所述透明胶层对应所述平面区的至少一部分的存储模量。\n\n[0010]有益效果：本发明提供一种柔性显示模组，通过使透明胶层对应弯曲区的至少一部分的存储模量小于透明胶层对应平面区的至少一部分的存储模量，减小透明胶层由于弯曲受回复力作用而与柔性显示面板之间界面处产生的切向拉应力，改善大曲率状态下的柔性显示面板的膜层产生裂纹以及膜层剥离的概率，保证了产品的可靠性。\n\n附图说明\n\n[0011]图1为本发明实施例的柔性显示模组的示意图；\n\n[0012]图2为图1所示柔性显示面板的示意图；\n\n[0013]图3为3M系列CF3006型UV胶在不同固化率时对应的储能模量。\n\n具体实施方式\n\n[0014]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0015]在传统技术中，会利用UV型光学胶将柔性显示面板与3D玻璃保护盖板贴合在一起。在贴合、加压脱泡后，利用发出特定波长的紫外光的UV灯源对UV型光学胶进行固化，使UV型光学胶的胶体内部产生分子链聚合，加强UV型光学胶与3D玻璃保护盖板、柔性显示面板之间界面的附著力，且使胶体模量提升。一般，为确保UV型光学胶与3D玻璃保护盖板之间的界面处以及UV型光学胶与柔性显示面板之间界面处的附著力相同，UV型光学胶对应平面区域的部分与UV型光学胶对应弯曲区域的部分皆需要同等的紫外光能量进行照射以达成均质的固化率。然而，UV型光学胶在整面固化后的低蠕变、高模量特性对于大曲率3D玻璃保护盖板制备得到的柔性显示模组的贴合良率及可靠性测试良率均较低。\n\n[0016]针对传统技术的问题，本发明通过使粘接保护盖板和柔性显示面板的透明胶层对应弯曲区的部分的存储模量小于透明胶层对应平面区的部分的存储模量，减小透明胶层对应弯曲区的部分由于弯曲产生的回复力，减小透明胶层由于受回复力而作用于柔性显示面板时在与柔性显示面板之间的界面处产生的拉应力，进而改善柔性显示面板由于受拉应力过大而出现裂纹的现象。另外，透明胶层对应平面区的部分的胶体模量较大，在平面区仍维持透明胶层的固有机械特性，较大的胶模量可使柔性显示模组在平面区能承受较大的耐压，且达到抗变形印痕的水准。\n\n[0017]另外，尽管传统柔性显示面板中也包括胶层，例如后盖板与有机发光二极管显示面板之间设置有胶层，偏光片与有机发光二极管显示面板之间也设置有胶层，由于这些胶层的厚度一般在20微米-30微米左右，即这些胶层的厚度较薄，降低这些胶层对应弯曲区的存储模量对降低柔性显示面板对应弯曲区的部分所受的应力的贡献较少。而保护盖板和柔性显示面板之间的透明胶层的厚度较厚，将保护盖板和柔性显示面板之间的透明胶层对应弯曲区的部分的存储模量降低，对降低柔性显示面板对应弯曲区的部分所受的应力的贡献较明显。\n\n[0018]请参阅图1，其为本发明实施例的柔性显示模组的示意图。柔性显示模组100具有一个平面区100a以及位于平面区100a相对两侧的弯曲区100b，弯曲区100b与平面区100a相邻。柔性显示模组100包括柔性显示面板10、保护盖板20以及透明胶层30。透明胶层30粘接柔性显示面板10和保护盖板20。\n\n[0019]如图2所示，其为图1所示柔性显示面板的示意图。柔性显示面板10包括依次叠置的散热层101、后盖板102、有机发光二极管显示面板103以及偏光片104。其中，偏光片104靠近透明胶层30设置，散热层101远离透明胶层30设置。\n\n[0020]在本实施例中，有机发光二极管显示面板103用于显示画面。有机发光二极管显示面板103包括依次叠置的薄膜晶体管阵列层、有机发光二极管阵列层以及薄膜封装层。其中，薄膜晶体管阵列层包括多个阵列排布的薄膜晶体管。薄膜晶体管阵列层包括多个图案化金属层以及多个绝缘层，多个绝缘层包括无机绝缘层和有机绝缘层。有机发光二极管阵列层包括多个阵列排布的有机发光二极管，有机发光二极管包括阴极、阳极以及设置于阴极和阳极之间的有机发光层。薄膜封装层包括两个无机绝缘层以及位于两个无机绝缘层之间的有机绝缘层。无机绝缘层的制备材料选自氮化硅或者氧化硅中的至少一种，有机绝缘层的制备材料选自聚酰亚胺或者丙烯酸酯。由于有机发光二极管显示面板包括无机绝缘层，有机发光二极管显示面板经过贴合弯曲后，无机绝缘层受弯曲张应力的作用。若无机绝缘层受弯曲张应力过大则会出现裂纹，导致有机发光二极管显示面板的显示功能失效。\n\n[0021]在本实施例中，偏光片104为圆偏光片，用于降低对环境光的反射。后盖板102为柔性聚合物层，后盖板102用于保护有机发光二极管显示面板103的背面。散热层101起到散热的作用。散热层101包括泡沫层1012以及导热金属层1011，泡沫层1012设置于导热金属层1011和后盖板102之间。导热金属层1011为铜箔。\n\n[0022]在本实施例中，保护盖板20用于保护偏光片104以及有机发光二极管显示面板103。保护盖板20为三维(3D)玻璃盖板。保护盖板20是透明的。保护盖板20对应平面区100a的部分为平面部，保护盖板20对应弯曲区100b的部分为圆弧弯曲部。保护盖板20对应弯曲区100b的部分的弧度α大于90度且小于180度，使得柔性显示模组100具有大曲率。具体地，保护盖板20对应弯曲区100b的部分的弧度α为100度、105度、110度、120度、130度、140度、150度或者175度。\n\n[0023]在本实施例中，透明胶层30对应弯曲区100b的至少一部分的存储模量小于透明胶层30对应平面区100a的至少一部分的存储模量，减小透明胶层30由于弯曲受回复力作用而与柔性显示面板10之间界面处产生的切向拉应力，使得柔性显示面板10的弯曲部分所受拉应力减小，降低大曲率状态下的柔性显示面板的无机膜层产生裂纹以及膜层剥离的概率。\n\n[0024]需要说明的是，图1所示透明胶层30所受的切向拉应力σ＝(ε1+ε2v)Y/2(1-v2)，其中，v为泊松比，Y为透明胶层的存储模量，ε1为第一应变，ε2为第二应变，第一应变的方向与第二应变的方向垂直，切向拉应力σ的方向与第一应变的方向相同。在柔性显示模组的厚度一定且弯曲半径一定的情况下，ε1和ε2均为定值。可知，切向拉应力与透明胶层30的存储模量成正比，若透明胶层30的存储模量越大，则切向拉应力σ越大。\n\n[0025]在本实施例中，透明胶层30对应平面区100a的部分的存储模量与透明胶层30对应弯曲区100b的部分的存储模量的差值与透明胶层30对应平面区100a的部分的存储模量的比值百分数大于或等于30％且小于100％，以使得透明胶层30对应平面区100a的部分的存储模量较大以具有足够的机械性能，且透明胶层30对应弯曲区的存储模量较小以减小柔性显示面板10对应弯曲区的部分受的切向拉应力。例如，该比值百分数可以为35％、40％、45％、50％、60％、80％、85％或者90％。\n\n[0026]具体地，透明胶层30对应平面区100a的部分的存储模量大于或等于115kPa，以使得透明胶层30对应平面区100a的部分具有固有机械特性，使得柔性显示模组在平面区100a能承受较大的耐压、抗变形印痕的水准。透明胶层30对应弯曲区100b的部分的存储模量大于或等于20kPa且小于或等于80kPa，以使得透明胶层30对应弯曲区100b的部分具有良好的形变能力(包括蠕变性能)的同时，保证透明胶层30在保护盖板20与柔性显示面板10之间起到一定的粘接作用，还能满足柔性显示模组在低弯曲半径下对透明胶层30的存储模量的要求。具体地，透明胶层30对应平面区100a的部分的存储模量为可以为118kPa、120kPa、130kPa、150kPa、200kPa或者200kPa以上；透明胶层30对应弯曲区100b的部分的存储模量可以为20kPa、25kPa、30kPa、40kPa、55kPa、60kPa、65kPa或者70kPa。\n\n[0027]在本实施例中，透明胶层30为紫外固化胶，紫外固化胶的制备材料为丙烯酸酯及其衍生物。透明胶层30对应弯曲区100b的部分的固化率小于透明胶层30对应平面区100a的部分的固化率，以使得透明胶层30对应弯曲区100b的部分的存储模量小于透明胶层30对应平面区100a的部分的存储模量。降低弯曲区100b的胶层固化程度，以致该区域胶体维持较软的程度，即该区域胶体的模量降低、蠕变大，以降低了柔性显示面板在弯曲区100b受的拉应力，进而改善大曲率状态下的柔性显示面板的膜层裂纹、剥离概率，保证了产品的可靠性。同时，在平面区100a的透明胶层30维持较高的固化率，使得平面区100a的透明胶层30仍维持透明胶层30的固有机械特性，较大的胶模量可使柔性显示模组在平面区能承受较大的耐压、抗变形印痕的水准，且避免透明胶层30对应平面区100a的部分固化率低导致透明胶层30对应的平面区100a的部分容易产生气泡而影响外观。\n\n[0028]需要说明的是，透明胶层30对应弯曲区100b的部分的固化率与透明胶层30对应平面区100a的部分的固化率不同可以有很多种方式实现。例如，调节用于发出紫外光的灯珠的数量，和/或，调节发出紫外光的灯珠之间的间距，和/或，调节发出紫外光的灯珠的功率。或者，将柔性显示模组100的透明胶层30对应弯曲区100b的部分与柔性显示模组100对应平面区100a的部分分别固化。\n\n[0029]在本实施例中，透明胶层30对应弯曲区100b的部分的固化率大于或等于0％且小于80％，使得透明胶层30对应弯曲区100b的部分具有较低的存储模量的同时，保证透明胶层30对应弯曲区100b的部分几乎不存在气泡，且保证透明胶层30对应弯曲区100b的部分具有足够的粘接力。透明胶层30对应平面区100a的部分的固化率大于或等于80％，以使得透明胶层30具有较大的存储模量，且减少透明胶层30对应平面区100a的部分固化后存在的气泡。透明胶层30的固化率大于或等于80％，透明胶层30基本完全固化。透明胶层30对应弯曲区100b的部分的固化率可以为0％、5％、10％、15％、20％、25％、30％或者40％。透明胶层30对应平面区100a的部分的固化率可以为80％、85％、88％或者90％。\n\n[0030]在本实施例中，透明胶层30对应弯曲区100b的部分的固化率为35％-45％，透明胶层30对应平面区100a的部分的固化率为75％-85％，以降低弯曲区100b的柔性显示面板10出现裂纹的概率的同时，提高柔性显示模组的平面区100a的机械性能，且使得透明胶层30对应平面区100a和弯曲区100b的部分在可靠性测试后出现气泡的概率均为0，提高柔性显示模组的可靠性。具体地，透明胶层30对应弯曲区100b的部分的固化率为40％，透明胶层30对应平面区100a的部分的固化率为80％。\n\n[0031]在本实施例中，透明胶层30的厚度为100微米-150微米，例如透明胶层30的厚度为110微米、120微米、130微米或者140微米。透明胶层30的厚度越薄，越有利于降低柔性显示面板10对应弯曲区100b的部分所受的应力。\n\n[0032]在本实施例中，柔性显示模组100对应弯曲区100b的半径为2毫米-5毫米，例如弯曲半径为3毫米或者4毫米。弯曲半径越大，越有利于降低柔性显示面板10对应弯曲区100b的部分所受的应力。\n\n[0033]请参阅表1，表1为130度的倒扣玻璃保护盖板和柔性显示面板通过3M系列CF3006型UV胶贴合时不同UV固化率对应的贴合裂纹百分比以及不同UV固化率的UV胶贴合后的柔性显示模组进行可靠性测试后的测试结果。其中，可靠性测试的条件为温度85度，湿度为85，且测试时间为240h。\n\n[0034]表1\n\n[0035]\n\n[0036]由表1可知，贴合过程中，UV胶的固化率为40％对应的贴合裂纹百分比比UV胶的固化率为80％对应的贴合裂纹百分比低8％，故UV固化胶的固化率低更有利于降低贴合过程中的裂纹产生概率。另外，对于可靠性测试，UV胶的固化率为40％时，会导致柔性显示模组的平面区出现气泡的概率为100％，而柔性显示模组对应弯曲区的部分不会产生气泡，故UV胶固化率较低会导致柔性显示膜层对应平面区气泡较多，但不会导致弯曲区出现气泡。UV胶的固化率为80％时，会导致柔性显示面板出现裂纹的百分比相较于UV胶的固化率为40％时增加20％，故弯曲区的UV胶的固化率较大不利于降低柔性显示面板出现裂纹的概率。\n\n[0037]请参阅图3，其为3M系列CF3006型UV胶在不同固化率时对应的储能模量。图3的横坐标为UV胶的固化率，图3的左侧纵坐标为胶体的固化率对应的储能模量，图3的右侧纵坐标为胶体的固化率对应的储能模量与胶体固化率为90％对应的储能模量的比值百分数。由图3可知，随着UV胶的固化率从10％增加至90％，固化后的胶层的储能模量递增。\n\n[0038]另外，结合图3和表1可知，固化率为40％时，固化后的胶层的储能模量为80kPa；固化率为80％时，固化后的胶层的储能模量为115kPa左右。故UV胶对应弯曲区的存储模量为80kPa且UV胶对应平面区的存储模量为115kPa，可以保证柔性显示模组的平面区无气泡且UV胶层存储模量高的同时，柔性显示模组的弯曲区出现裂纹的概率明显降低。\n\n[0039]以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10908, 23962, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及显示器件的制造，具体涉及像素驱动电路和显示面板。\n\n背景技术\n\n[0002]Micro LED(Micro Light Emitting Diode,微发光二极管显示器)作为新一代显示器件，比现有的OLED(Organic Light Emitting Diode，有机发光二极管显示器)的亮度更高、发光效率更好、功耗更低。\n\n[0003]如图1所示，L1、L2、L3分别为红光Micro LED、绿光Micro LED和蓝光Micro LED的电流-电压曲线，L4为OLED的电流-电压曲线，具体的，横坐标表示对应的Micro LED或者OLED两端的电压，纵坐标表示流经对应的Micro LED或者OLED的电流。由图1可知，MicroLED的电流-电压曲线相比于OLED的电流-电压曲线较陡峭，即Micro LED对应的像素从最小灰阶值到最大灰阶值过程中对应的Micro LED两端的电压变化极小；然而，驱动模块的电压输出的变化值无法设置为足够小以保证Micro LED实现和Micro LED相同级数的灰阶值，造成Micro LED对应的像素能够实现的灰阶级数较少。\n\n发明内容\n\n[0004]本申请实施例提供像素驱动电路和显示面板，通过在发光模块的支路上串联调节模块，以解决现有的驱动模块的电压输出的变化值较大导致的Micro LED的电压变化的最小值较大，造成对应的像素无法实现较多的灰阶级数的问题。\n\n[0005]本申请实施例提供像素驱动电路，所述像素驱动电路包括：\n\n[0006]驱动模块；\n\n[0007]第一电压模块；\n\n[0008]发光模块，所述发光模块的两端分别电性连接所述驱动模块和所述第一电压模块，所述发光模块包括微发光二极管；\n\n[0009]调节模块，所述调节模块和所述发光模块串联连接。\n\n[0010]在一实施例中，所述调节模块包括电阻元件。\n\n[0011]在一实施例中，所述电阻元件的电阻率为10-3Ω.cm至10Ω.cm。\n\n[0012]在一实施例中，所述电阻元件呈透明。\n\n[0013]在一实施例中，所述电阻元件的电阻为105Ω。\n\n[0014]在一实施例中，所述电阻元件的组成材料包括铝掺杂的氧化锌。\n\n[0015]在一实施例中，所述驱动模块包括：\n\n[0016]驱动薄膜晶体管，所述驱动薄膜晶体管的源极电性连接所述发光模块，所述驱动薄膜晶体管的漏极电性连接第二电压模块；\n\n[0017]其中，所述调节模块连接于所述驱动薄膜晶体管的所述漏极和所述发光模块之间，或者所述调节模块连接于所述第一电压模块和所述发光模块之间。\n\n[0018]在一实施例中，还包括：\n\n[0019]存储模块，所述存储模块的两端分别电性连接所述驱动薄膜晶体管的栅极和源极。\n\n[0020]在一实施例中，还包括：\n\n[0021]写入模块，所述写入模块的输入端电性连接数据线，所述写入模块的输出端电性连接所述驱动薄膜晶体管的栅极，所述写入模块的控制端电性连接扫描线。\n\n[0022]本申请实施例提供显示面板，其特征在于，所述显示面板包括如上文任一所述的像素驱动电路。\n\n[0023]本申请提供了像素驱动电路和显示面板，所述像素驱动电路包括驱动模块、第一电压模块、发光模块和调节模块，所述发光模块的两端分别电性连接所述驱动模块和所述第一电压模块，所述发光模块包括微发光二极管，并且所述调节模块和所述发光模块串联连接；因此，本方案中通过在所述发光模块的支路上串联所述调节模块，即所述调节模块和所述发光模块共同分担所述驱动模块的输出电压，使得所述微发光二极管两端的电压变化的最小值可以小于所述驱动模块的输出电压变化的最小值，进一步的，流经所述微发光二极管的电流的变化值也可以变化地足够小，以使得所述微发光二极管对应的像素可以实现较多的灰阶级数显示，以丰富画面的色彩表现力和增加画面的色彩层次。\n\n附图说明\n\n[0024]下面通过附图来对本申请进行进一步说明。需要说明的是，下面描述中的附图仅仅是用于解释说明本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0025]图1为现有技术中的不同发光器件的电流-电压曲线；\n\n[0026]图2为本申请实施例提供的像素驱动电路的电路图；\n\n[0027]图3为本申请实施例提供的显示面板的截面示意图；\n\n[0028]图4为本申请实施例提供的不同发光器件的电流-电压曲线。\n\n具体实施方式\n\n[0029]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整的描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0030]在本发明的描述中，需要理解的是，术语“上”、“下”等指示的方位或位置关系为基于附图所示的方位或位置关系，例如，“上”只是表面在物体上方，具体指代正上方、斜上方、上表面都可以，只要居于物体水平之上即可；“两侧”或者“两端”是指代图中可以体现出的物体的相对的两个位置，所述两个位置可以和物体直接/间接接触，以上方位或位置关系仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。\n\n[0031]本申请中的术语“第一”、“第二”是用于区别不同对象，而不是用于描述特定顺序。此外，术语“包括”和“具有”以及它们任何变形，意图在于覆盖不排他的包含。例如包含了一系列步骤或模块的过程、方法、系统、产品或设备没有限定于已列出的步骤或模块，而是可选地还包括没有列出的步骤或模块，或可选地还包括对于这些过程、方法、产品或设备固有的其它步骤或模块。\n\n[0032]在本文中提及“实施例”意味着，结合实施例描述的特定特征、结构或特性可以包含在本申请的至少一个实施例中。在说明书中的各个位置出现该短语并不一定均是指相同的实施例，也不是与其它实施例互斥的独立的或备选的实施例。本领域技术人员显式地和隐式地理解的是，本文所描述的实施例可以与其它实施例相结合。\n\n[0033]本申请实施例提供了像素驱动电路和显示面板，所述像素驱动电路包括但不限于以下实施例以及以下实施例的组合，所述显示面板包括如下任一所述的像素驱动电路。\n\n[0034]在一实施例中，如图2所示，所述像素驱动电路100包括：驱动模块101；第一电压模块102；发光模块103，所述发光模块103的两端分别电性连接所述驱动模块101和所述第一电压模块102，所述发光模块103包括微发光二极管；调节模块104，所述调节模块104和所述发光模块103串联连接。\n\n[0035]其中，如图2所示，所述驱动模块101包括输出端01，所述驱动模块101的所述输出端01连接相互串联的所述发光模块103和所述调节模块104，其中，所述发光模块103和所述调节模块104的相对位置关系不做限制，此处以所述驱动模块101的所述输出端01连接所述调节模块104的第一端02，所述调节模块104的第二端03连接所述发光模块103的输入端04，所述发光模块103的输出端05连接所述第一电压模块102。进一步的，所述微发光二极管的阳极和阴极可以分别被配置为所述发光模块103的输入端04和输出端05。进一步的，所述第一电压模块102可以输出恒定的低电压或者恒定的接地电压。\n\n[0036]具体的，此处以所述第一电压模块102可以输出恒定的接地电压为例说明，即所述发光二极管的阴极电压恒定为0伏，假设所述调节模块104的电阻值为R1，所述微发光二极管发光时的电阻值为R2，假设第一时刻所述驱动模块101的所述输出端01的电压为V1，第二时刻所述驱动模块101的所述输出端01的电压为V2。可以理解的，当所述驱动模块101的所述输出端01和所述第一电压模块102之间不包含所述调节模块104时，所述第一时刻至所述第二时刻期间所述微发光二极管的两端电压变化值为(V2-V1)；当所述驱动模块101的所述输出端01和所述第一电压模块102之间还包含所述调节模块104时，所述第一时刻至所述第二时刻期间所述微发光二极管的两端电压变化值为R2*(V2-V1)/(R1+R2)。由上述分析可知，后者与前者相比较，所述第一时刻至所述第二时刻期间所述微发光二极管的两端电压变化值由(V2-V1)减小至R2*(V2-V1)/(R1+R2)，即本实施例通过在所述发光模块103所在的支路上串联所述调节模块104，可以使得所述微发光二极管的两端电压变化值小于所述驱动模块101的所述输出端01的电压变化值，即可以有效减小所述微发光二极管的两端电压变化值，以使得流经所述微发光二极管的电流的变化值也可以足够小，以使得微发光二极管对应的像素可以实现较多的灰阶级数，以丰富画面的色彩表现力和增加画面的色彩层次。\n\n[0037]在一实施例中，如图2所示，所述调节模块104包括电阻元件。可以理解的，导体对电流的阻碍作用就叫所述导体的电阻，电阻可以表示所述导体对电流阻碍作用的大小，所述导体的电阻越大，表示所述导体对电流的阻碍作用越大，不同的导体的电阻不同。其中，所述电阻元件可以理解为具有恒定的电阻的元件，即所述驱动模块101的所述输出端01和所述第一电压模块102之间的电压差由所述调节模块104和所述发光模块103共同分担；进一步的，根据欧姆定律可知，若所述调节模块104的电阻大于所述发光模块103发光时的电阻，则所述发光模块103发光时两端的电压小于此时所述调节模块104的电压，也即所述发光模块103两端的电压可以具有更小的变化值，反之则反。\n\n[0038]在一实施例中，所述电阻元件的电阻率为10-3Ω.cm至10Ω.cm。可以理解的，所述电阻元件的电阻由所述电阻元件的长度、横截面积和电阻率相关，进一步的，所述电阻元件的电阻和所述电阻元件的长度和电阻率均成正比，所述电阻元件的电阻和所述电阻元件的横截面积成反比。具体的，可以根据所述电阻元件的电阻需求，选取合适电阻率的材料，再调整对应的长度、横截面积以设置所述电阻元件。在一实施例中，所述电阻元件的电阻可以为105Ω，若所述电阻元件的电阻率为10-2Ω.cm，所述电阻元件的厚度为20nm，所述电阻元件的宽度为5μm，即所述电阻元件的的横截面积为10-9cm2，故所述电阻元件的长度可以设置为100μm。\n\n[0039]在一实施例中，所述电阻元件呈透明。具体的，所述电阻元件的组成材料可以包括但不限于氧化铟锌、氧化铟锡、铝掺杂的氧化锌等透明导电材料。其中，所述铝掺杂的氧化锌材料可以包括但不限于氧化铝和氧化锌。可以理解的，所述电阻元件呈透明可以透光，可以避免降低显示面板的透光率。进一步的，所述铝掺杂的氧化锌材料对于红外光的反射率较大，可以反射可见光中的的红外光，降低显示面板对于红外光的吸收，进而降低显示面板的温度以提高显示面板的可靠性。\n\n[0040]在一实施例中，如图2所示，所述驱动模块101包括：驱动薄膜晶体管，所述驱动薄膜晶体管的源极电性连接所述发光模块103，所述驱动薄膜晶体管的漏极电性连接第二电压模块105；其中，所述调节模块104连接于所述驱动薄膜晶体管的所述漏极和所述发光模块103之间，或者所述调节模块104连接于所述第一电压模块102和所述发光模块103之间。其中，所述驱动薄膜晶体管可以为N型薄膜晶体管或者P型薄膜晶体管，可以根据所述驱动薄膜晶体管的具体类型设置所述驱动薄膜晶体管的连接关系。具体的，如图2所示，当所述驱动薄膜晶体管为N型薄膜晶体管时，所述驱动薄膜晶体管的源极可以被配置为所述驱动模块101的所述输出端01，所述驱动薄膜晶体管的漏极可以被配置为所述驱动模块101的输入端06，因此，所述第二电压模块105可以输出恒定的高电压，即所述第二电压模块105输出的电压大于所述第一电压模块102输出的电压。\n\n[0041]其中，如图3所示，为包含所述像素驱动电路100的显示面板200的截面图，由上文论述可知，所述显示面板200包括所述驱动薄膜晶体管201、所述微发光二极管202和所述电阻元件。进一步的，所述显示面板200还包括基板204、位于所述基板204上的遮光层205、覆盖所述遮光层205和所述基板204的缓冲层206。具体的，所述基板204可以为刚性基板或者柔性基板，所述刚性基板可以为但不限于玻璃或者硅片，所述柔性基板可以为但不限于聚酰亚胺；所述遮光层205的组成材料包括但不限于金属材料，例如铜、铝、钼、钛；所述缓冲层206可以为单层膜层或者复合膜层，例如，当所述述缓冲层40为单层膜层时，所述述缓冲层206的组成材料可以包括但不限于氧化硅、氮化硅或者氮氧化硅，当所述缓冲层206为复合膜层时，所述缓冲层206可以包括第一缓冲层和位于所述第一缓冲层远离所述基板204一侧的第二缓冲层，所述第一缓冲层的组成材料可以包括但不限于氮化硅，所述第二缓冲层的组成材料可以包括但不限于氧化硅。\n\n[0042]具体的，如图3所示，所述驱动薄膜晶体管201包括位于所述缓冲层206上的有源层207、位于所述有源层207上的栅极绝缘层208、位于所述栅极绝缘层208上的栅极层209、和所述有源层207的两端电性连接的源极层210和漏极层211，所述显示面板200还包括覆盖所述缓冲层206、所述有源层207、所述栅极绝缘层208和所述栅极层209的介电层212，所述介电层212上设有多个第一通孔213，所述缓冲层206上设有第二通孔214，所述第二通孔214和其中一所述第一通孔213相对设置，所述源极层210和所述漏极层211位于所述介电层212上，所述漏极层211通过对应的两个所述通孔213以及所述第二通孔214电性连接所述遮光层205和所述有源层207的一端，所述源极层210通过对应的所述第一通孔213电性连接所述有源层207的另一端。进一步的，如图3所示，所述显示面板200还包括钝化层215、和所述源极层210同层设置的公共电极层221，所述钝化层215覆盖所述介电层212、所述源极层210、所述漏极层211和所述公共电极层221，所述介电层212上设有两个第三通孔216。再进一步的，所述显示面板200还包括两个连接部217、第一导电部218、第二导电部219和封装层220，两个所述连接部217均位于所述钝化层215上，并分别经由对应的所述第三通孔216延伸至所述源极层210和所述公共电极层221，其中，所述电阻元件包括正极2031、负极2032和发光层2033，所述发光层2033位于所述正极2031和所述负极2032之间，所述正极2031连接所述第一导电部218并通过对应的所述连接部217以电性连接所述源极层210，所述负极2032连接所述第二导电部219并通过对应的所述连接部217以电性连接所述公共电极层221。\n\n[0043]需要注意的是，其中两个所述连接部217、所述第一导电部218和所述第二导电部219均包含于所述电阻元件，具体的，两个所述连接部217、所述第一导电部218和所述第二导电部219四者的结合的整体可以参考上文关于所述电阻元件的相关描述。例如，两个所述连接部217、所述第一导电部218和所述第二导电部219的电阻率均可以为10-3Ω.cm至10Ω.cm，进一步的，两个所述连接部217、所述第一导电部218和所述第二导电部219的有效厚度和有效宽度可以分别为20nm和5μm，再进一步的，两个所述连接部217、所述第一导电部218和所述第二导电部219的总有效长度可以为100μm。\n\n[0044]在一实施例中，如图2所示，所述像素驱动电路100还包括：存储模块106，所述存储模块106的两端分别电性连接所述驱动薄膜晶体管的栅极和源极。具体的，此处还是以所述驱动薄膜晶体管为N型薄膜晶体管为例进行说明，所述驱动薄膜晶体管的栅极可以被配置为所述驱动模块101的控制端07，所述存储模块106可以包括电容，所述电容的两端可以被配置为所述存储模块106的两端，即所述电容连接于所述驱动模块101的所述控制端07和所述输出端01。在一实施例中，如图2所示，所述像素驱动电路100还包括：写入模块107，所述写入模块107的输入端08电性连接数据线108，所述写入模块107的输出端09电性连接所述驱动薄膜晶体管的栅极，所述写入模块107的控制端10电性连接第一扫描线109，其中，所述写入模块107可以包括写入薄膜晶体管。进一步的，如图2所示，所述像素驱动电路100还包括：侦测模块110，所述侦测模块110的输入端11和控制端12分别电性连接侦测线111和第二扫描线112，所述侦测模块110的输出端13电性连接所述驱动模块101的所述输出端01，其中，所述侦测模块110可以包括侦测薄膜晶体管。在一实施例中，如图2所示，所述像素驱动电路100还包括：工作电压模块113，所述工作电压模块113电性连接所述驱动模块101的输入端06以向所述驱动模块101中的所述驱动薄膜晶体管提供工作电压。\n\n[0045]具体的，在显示阶段，所述第一扫描线109和所述第二扫描线112分别可以控制所述写入模块107中的所述写入薄膜晶体管和所述侦测模块110中的所述侦测薄膜晶体管打开，所述数据线108通过所述写入模块107中的所述写入薄膜晶体管向所述存储模块106和所述驱动模块101的所述控制端07写入数据信号，所述存储模块106维持所述驱动模块101的所述控制端07维持为对应的所述数据信号，同时所述侦测线111通过所述侦测模块110中的所述侦测薄膜晶体管向所述驱动模块101的所述输出端01写入侦测数据。\n\n[0046]具体的，在侦测阶段，所述第一扫描线109和所述第二扫描线112分别仍然可以控制所述写入模块107中的所述写入薄膜晶体管和所述侦测模块110中的所述侦测薄膜晶体管打开，所述数据线108仍然通过所述写入模块107中的所述写入薄膜晶体管向所述存储模块106和所述驱动模块101的所述控制端07写入数据信号，但是，同时所述侦测线111通过所述侦测模块110中的所述侦测薄膜晶体管读取所述驱动模块101的所述输出端01的输出电压。需要注意的是，在所述侦测阶段和所述显示阶段之间，所述侦测线111处于悬空状态，此时所述存储模块106、所述驱动模块101的所述控制端07和所述输出端01形成一回路，所述存储模块106放电导致所述驱动模块101的所述输出端01的电位上升，当所述驱动模块101的所述控制端07和所述输出端01的电位差等于所述驱动模块101中的所述驱动薄膜晶体管此时的阈值电压时，所述驱动薄膜晶体管截止，即在所述侦测阶段，可以根据所述驱动模块101的所述控制端07和所述侦测线111读取的所述输出电压的差值得到所述驱动薄膜晶体管此时的阈值电压。\n\n[0047]可以理解的，在所述显示阶段、所述侦测阶段或者其它阶段中，当所述发光模块103的所述输入端04的电压大于所述发光模块103的所述输出端05的电压时，所述发光模块103即可发光，所述驱动模块101的所述输出端01的电压可以控制流经所述发光模块103的电流大小，以控制所述发光模块103的发光情况。具体的，如图4所示，L4、L5、L6分别为在所述发光模块103所在的支路上串联了所述调节模块104后的红光Micro LED、绿光Micro LED和蓝光Micro LED的电流-电压曲线，L5为OLED的电流-电压曲线，具体的，横坐标表示对应的Micro LED或者OLED两端的电压，纵坐标表示流经对应的Micro LED或者OLED的电流。进一步的，此处图1中的L1至L3可以理解为图2中去除所述调节模块104后的所述发光模块103分别为红光Micro LED、绿光Micro LED、蓝光Micro LED和OLED时对应的电流-电压曲线，图4中的L4至L7可以理解为图2中包含所述调节模块104的所述发光模块103分别为红光MicroLED、绿光Micro LED、蓝光Micro LED和OLED时对应的电流-电压曲线。对比图4和图1可知，图4中的Micro LED的电流-电压曲线相比于图1中的Micro LED的电流-电压曲线较平坦，即在所述发光模块103所在的支路上串联了所述调节模块104后，所述发光模块103为MicroLED时对应的像素从最小灰阶值到最大灰阶值过程中对应的Micro LED两端的电压变化值有所增加，降低了对所述驱动模块101的电压输出的变化值的需求。根据上文分析可知，即本实施例通过在所述发光模块103所在的支路上串联所述调节模块104，可以使得所述发光模块103的两端电压变化值小于所述驱动模块101的所述输出端01的电压变化值，即可以有效减小所述发光模块103的两端电压变化值，以使得流经所述发光模块103的电流的变化值也可以足够小，以使得发光模块103对应的像素可以实现较多的灰阶级数，以丰富画面的色彩表现力和增加画面的色彩层次。\n\n[0048]本申请实施例还提供了显示面板，所述显示面板包括如上文任一项所述的像素驱动电路。\n\n[0049]本申请提供了像素驱动电路和显示面板，所述像素驱动电路包括驱动模块、第一电压模块、发光模块和调节模块，所述发光模块的两端分别电性连接所述驱动模块和所述第一电压模块，所述发光模块包括微发光二极管，并且所述调节模块和所述发光模块串联连接；因此，本方案中通过在所述发光模块的支路上串联所述调节模块，即所述调节模块和所述发光模块共同分担所述驱动模块的输出电压，使得所述微发光二极管两端的电压变化的最小值可以小于所述驱动模块的输出电压变化的最小值，进一步的，流经所述微发光二极管的电流的变化值也可以变化地足够小，以使得所述微发光二极管对应的像素可以实现较多的灰阶级数显示，以丰富画面的色彩表现力和增加画面的色彩层次。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及显示器件的制造，具体涉及像素驱动电路和显示面板。\n\n背景技术\n\n[0002]Micro LED(Micro Light Emitting Diode,微发光二极管显示器)作为新一代显示器件，比现有的OLED(Organic Light Emitting Diode，有机发光二极管显示器)的亮度更高、发光效率更好、功耗更低。\n\n[0003]如图1所示，L1、L2、L3分别为红光Micro LED、绿光Micro LED和蓝光Micro LED的电流-电压曲线，L4为OLED的电流-电压曲线，具体的，横坐标表示对应的Micro LED或者OLED两端的电压，纵坐标表示流经对应的Micro LED或者OLED的电流。由图1可知，MicroLED的电流-电压曲线相比于OLED的电流-电压曲线较陡峭，即Micro LED对应的像素从最小灰阶值到最大灰阶值过程中对应的Micro LED两端的电压变化极小；然而，驱动模块的电压输出的变化值无法设置为足够小以保证Micro LED实现和Micro LED相同级数的灰阶值，造成Micro LED对应的像素能够实现的灰阶级数较少。\n\n发明内容\n\n[0004]本申请实施例提供像素驱动电路和显示面板，通过在发光模块的支路上串联调节模块，以解决现有的驱动模块的电压输出的变化值较大导致的Micro LED的电压变化的最小值较大，造成对应的像素无法实现较多的灰阶级数的问题。\n\n[0005]本申请实施例提供像素驱动电路，所述像素驱动电路包括：\n\n[0006]驱动模块；\n\n[0007]第一电压模块；\n\n[0008]发光模块，所述发光模块的两端分别电性连接所述驱动模块和所述第一电压模块，所述发光模块包括微发光二极管；\n\n[0009]调节模块，所述调节模块和所述发光模块串联连接。\n\n[0010]在一实施例中，所述调节模块包括电阻元件。\n\n[0011]在一实施例中，所述电阻元件的电阻率为10-3Ω.cm至10Ω.cm。\n\n[0012]在一实施例中，所述电阻元件呈透明。\n\n[0013]在一实施例中，所述电阻元件的电阻为105Ω。\n\n[0014]在一实施例中，所述电阻元件的组成材料包括铝掺杂的氧化锌。\n\n[0015]在一实施例中，所述驱动模块包括：\n\n[0016]驱动薄膜晶体管，所述驱动薄膜晶体管的源极电性连接所述发光模块，所述驱动薄膜晶体管的漏极电性连接第二电压模块；\n\n[0017]其中，所述调节模块连接于所述驱动薄膜晶体管的所述漏极和所述发光模块之间，或者所述调节模块连接于所述第一电压模块和所述发光模块之间。\n\n[0018]在一实施例中，还包括：\n\n[0019]存储模块，所述存储模块的两端分别电性连接所述驱动薄膜晶体管的栅极和源极。\n\n[0020]在一实施例中，还包括：\n\n[0021]写入模块，所述写入模块的输入端电性连接数据线，所述写入模块的输出端电性连接所述驱动薄膜晶体管的栅极，所述写入模块的控制端电性连接扫描线。\n\n[0022]本申请实施例提供显示面板，其特征在于，所述显示面板包括如上文任一所述的像素驱动电路。\n\n[0023]本申请提供了像素驱动电路和显示面板，所述像素驱动电路包括驱动模块、第一电压模块、发光模块和调节模块，所述发光模块的两端分别电性连接所述驱动模块和所述第一电压模块，所述发光模块包括微发光二极管，并且所述调节模块和所述发光模块串联连接；因此，本方案中通过在所述发光模块的支路上串联所述调节模块，即所述调节模块和所述发光模块共同分担所述驱动模块的输出电压，使得所述微发光二极管两端的电压变化的最小值可以小于所述驱动模块的输出电压变化的最小值，进一步的，流经所述微发光二极管的电流的变化值也可以变化地足够小，以使得所述微发光二极管对应的像素可以实现较多的灰阶级数显示，以丰富画面的色彩表现力和增加画面的色彩层次。\n\n附图说明\n\n[0024]下面通过附图来对本申请进行进一步说明。需要说明的是，下面描述中的附图仅仅是用于解释说明本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0025]图1为现有技术中的不同发光器件的电流-电压曲线；\n\n[0026]图2为本申请实施例提供的像素驱动电路的电路图；\n\n[0027]图3为本申请实施例提供的显示面板的截面示意图；\n\n[0028]图4为本申请实施例提供的不同发光器件的电流-电压曲线。\n\n具体实施方式\n\n[0029]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整的描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0030]在本发明的描述中，需要理解的是，术语“上”、“下”等指示的方位或位置关系为基于附图所示的方位或位置关系，例如，“上”只是表面在物体上方，具体指代正上方、斜上方、上表面都可以，只要居于物体水平之上即可；“两侧”或者“两端”是指代图中可以体现出的物体的相对的两个位置，所述两个位置可以和物体直接/间接接触，以上方位或位置关系仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。\n\n[0031]本申请中的术语“第一”、“第二”是用于区别不同对象，而不是用于描述特定顺序。此外，术语“包括”和“具有”以及它们任何变形，意图在于覆盖不排他的包含。例如包含了一系列步骤或模块的过程、方法、系统、产品或设备没有限定于已列出的步骤或模块，而是可选地还包括没有列出的步骤或模块，或可选地还包括对于这些过程、方法、产品或设备固有的其它步骤或模块。\n\n[0032]在本文中提及“实施例”意味着，结合实施例描述的特定特征、结构或特性可以包含在本申请的至少一个实施例中。在说明书中的各个位置出现该短语并不一定均是指相同的实施例，也不是与其它实施例互斥的独立的或备选的实施例。本领域技术人员显式地和隐式地理解的是，本文所描述的实施例可以与其它实施例相结合。\n\n[0033]本申请实施例提供了像素驱动电路和显示面板，所述像素驱动电路包括但不限于以下实施例以及以下实施例的组合，所述显示面板包括如下任一所述的像素驱动电路。\n\n[0034]在一实施例中，如图2所示，所述像素驱动电路100包括：驱动模块101；第一电压模块102；发光模块103，所述发光模块103的两端分别电性连接所述驱动模块101和所述第一电压模块102，所述发光模块103包括微发光二极管；调节模块104，所述调节模块104和所述发光模块103串联连接。\n\n[0035]其中，如图2所示，所述驱动模块101包括输出端01，所述驱动模块101的所述输出端01连接相互串联的所述发光模块103和所述调节模块104，其中，所述发光模块103和所述调节模块104的相对位置关系不做限制，此处以所述驱动模块101的所述输出端01连接所述调节模块104的第一端02，所述调节模块104的第二端03连接所述发光模块103的输入端04，所述发光模块103的输出端05连接所述第一电压模块102。进一步的，所述微发光二极管的阳极和阴极可以分别被配置为所述发光模块103的输入端04和输出端05。进一步的，所述第一电压模块102可以输出恒定的低电压或者恒定的接地电压。\n\n[0036]具体的，此处以所述第一电压模块102可以输出恒定的接地电压为例说明，即所述发光二极管的阴极电压恒定为0伏，假设所述调节模块104的电阻值为R1，所述微发光二极管发光时的电阻值为R2，假设第一时刻所述驱动模块101的所述输出端01的电压为V1，第二时刻所述驱动模块101的所述输出端01的电压为V2。可以理解的，当所述驱动模块101的所述输出端01和所述第一电压模块102之间不包含所述调节模块104时，所述第一时刻至所述第二时刻期间所述微发光二极管的两端电压变化值为(V2-V1)；当所述驱动模块101的所述输出端01和所述第一电压模块102之间还包含所述调节模块104时，所述第一时刻至所述第二时刻期间所述微发光二极管的两端电压变化值为R2*(V2-V1)/(R1+R2)。由上述分析可知，后者与前者相比较，所述第一时刻至所述第二时刻期间所述微发光二极管的两端电压变化值由(V2-V1)减小至R2*(V2-V1)/(R1+R2)，即本实施例通过在所述发光模块103所在的支路上串联所述调节模块104，可以使得所述微发光二极管的两端电压变化值小于所述驱动模块101的所述输出端01的电压变化值，即可以有效减小所述微发光二极管的两端电压变化值，以使得流经所述微发光二极管的电流的变化值也可以足够小，以使得微发光二极管对应的像素可以实现较多的灰阶级数，以丰富画面的色彩表现力和增加画面的色彩层次。\n\n[0037]在一实施例中，如图2所示，所述调节模块104包括电阻元件。可以理解的，导体对电流的阻碍作用就叫所述导体的电阻，电阻可以表示所述导体对电流阻碍作用的大小，所述导体的电阻越大，表示所述导体对电流的阻碍作用越大，不同的导体的电阻不同。其中，所述电阻元件可以理解为具有恒定的电阻的元件，即所述驱动模块101的所述输出端01和所述第一电压模块102之间的电压差由所述调节模块104和所述发光模块103共同分担；进一步的，根据欧姆定律可知，若所述调节模块104的电阻大于所述发光模块103发光时的电阻，则所述发光模块103发光时两端的电压小于此时所述调节模块104的电压，也即所述发光模块103两端的电压可以具有更小的变化值，反之则反。\n\n[0038]在一实施例中，所述电阻元件的电阻率为10-3Ω.cm至10Ω.cm。可以理解的，所述电阻元件的电阻由所述电阻元件的长度、横截面积和电阻率相关，进一步的，所述电阻元件的电阻和所述电阻元件的长度和电阻率均成正比，所述电阻元件的电阻和所述电阻元件的横截面积成反比。具体的，可以根据所述电阻元件的电阻需求，选取合适电阻率的材料，再调整对应的长度、横截面积以设置所述电阻元件。在一实施例中，所述电阻元件的电阻可以为105Ω，若所述电阻元件的电阻率为10-2Ω.cm，所述电阻元件的厚度为20nm，所述电阻元件的宽度为5μm，即所述电阻元件的的横截面积为10-9cm2，故所述电阻元件的长度可以设置为100μm。\n\n[0039]在一实施例中，所述电阻元件呈透明。具体的，所述电阻元件的组成材料可以包括但不限于氧化铟锌、氧化铟锡、铝掺杂的氧化锌等透明导电材料。其中，所述铝掺杂的氧化锌材料可以包括但不限于氧化铝和氧化锌。可以理解的，所述电阻元件呈透明可以透光，可以避免降低显示面板的透光率。进一步的，所述铝掺杂的氧化锌材料对于红外光的反射率较大，可以反射可见光中的的红外光，降低显示面板对于红外光的吸收，进而降低显示面板的温度以提高显示面板的可靠性。\n\n[0040]在一实施例中，如图2所示，所述驱动模块101包括：驱动薄膜晶体管，所述驱动薄膜晶体管的源极电性连接所述发光模块103，所述驱动薄膜晶体管的漏极电性连接第二电压模块105；其中，所述调节模块104连接于所述驱动薄膜晶体管的所述漏极和所述发光模块103之间，或者所述调节模块104连接于所述第一电压模块102和所述发光模块103之间。其中，所述驱动薄膜晶体管可以为N型薄膜晶体管或者P型薄膜晶体管，可以根据所述驱动薄膜晶体管的具体类型设置所述驱动薄膜晶体管的连接关系。具体的，如图2所示，当所述驱动薄膜晶体管为N型薄膜晶体管时，所述驱动薄膜晶体管的源极可以被配置为所述驱动模块101的所述输出端01，所述驱动薄膜晶体管的漏极可以被配置为所述驱动模块101的输入端06，因此，所述第二电压模块105可以输出恒定的高电压，即所述第二电压模块105输出的电压大于所述第一电压模块102输出的电压。\n\n[0041]其中，如图3所示，为包含所述像素驱动电路100的显示面板200的截面图，由上文论述可知，所述显示面板200包括所述驱动薄膜晶体管201、所述微发光二极管202和所述电阻元件。进一步的，所述显示面板200还包括基板204、位于所述基板204上的遮光层205、覆盖所述遮光层205和所述基板204的缓冲层206。具体的，所述基板204可以为刚性基板或者柔性基板，所述刚性基板可以为但不限于玻璃或者硅片，所述柔性基板可以为但不限于聚酰亚胺；所述遮光层205的组成材料包括但不限于金属材料，例如铜、铝、钼、钛；所述缓冲层206可以为单层膜层或者复合膜层，例如，当所述述缓冲层40为单层膜层时，所述述缓冲层206的组成材料可以包括但不限于氧化硅、氮化硅或者氮氧化硅，当所述缓冲层206为复合膜层时，所述缓冲层206可以包括第一缓冲层和位于所述第一缓冲层远离所述基板204一侧的第二缓冲层，所述第一缓冲层的组成材料可以包括但不限于氮化硅，所述第二缓冲层的组成材料可以包括但不限于氧化硅。\n\n[0042]具体的，如图3所示，所述驱动薄膜晶体管201包括位于所述缓冲层206上的有源层207、位于所述有源层207上的栅极绝缘层208、位于所述栅极绝缘层208上的栅极层209、和所述有源层207的两端电性连接的源极层210和漏极层211，所述显示面板200还包括覆盖所述缓冲层206、所述有源层207、所述栅极绝缘层208和所述栅极层209的介电层212，所述介电层212上设有多个第一通孔213，所述缓冲层206上设有第二通孔214，所述第二通孔214和其中一所述第一通孔213相对设置，所述源极层210和所述漏极层211位于所述介电层212上，所述漏极层211通过对应的两个所述通孔213以及所述第二通孔214电性连接所述遮光层205和所述有源层207的一端，所述源极层210通过对应的所述第一通孔213电性连接所述有源层207的另一端。进一步的，如图3所示，所述显示面板200还包括钝化层215、和所述源极层210同层设置的公共电极层221，所述钝化层215覆盖所述介电层212、所述源极层210、所述漏极层211和所述公共电极层221，所述介电层212上设有两个第三通孔216。再进一步的，所述显示面板200还包括两个连接部217、第一导电部218、第二导电部219和封装层220，两个所述连接部217均位于所述钝化层215上，并分别经由对应的所述第三通孔216延伸至所述源极层210和所述公共电极层221，其中，所述电阻元件包括正极2031、负极2032和发光层2033，所述发光层2033位于所述正极2031和所述负极2032之间，所述正极2031连接所述第一导电部218并通过对应的所述连接部217以电性连接所述源极层210，所述负极2032连接所述第二导电部219并通过对应的所述连接部217以电性连接所述公共电极层221。\n\n[0043]需要注意的是，其中两个所述连接部217、所述第一导电部218和所述第二导电部219均包含于所述电阻元件，具体的，两个所述连接部217、所述第一导电部218和所述第二导电部219四者的结合的整体可以参考上文关于所述电阻元件的相关描述。例如，两个所述连接部217、所述第一导电部218和所述第二导电部219的电阻率均可以为10-3Ω.cm至10Ω.cm，进一步的，两个所述连接部217、所述第一导电部218和所述第二导电部219的有效厚度和有效宽度可以分别为20nm和5μm，再进一步的，两个所述连接部217、所述第一导电部218和所述第二导电部219的总有效长度可以为100μm。\n\n[0044]在一实施例中，如图2所示，所述像素驱动电路100还包括：存储模块106，所述存储模块106的两端分别电性连接所述驱动薄膜晶体管的栅极和源极。具体的，此处还是以所述驱动薄膜晶体管为N型薄膜晶体管为例进行说明，所述驱动薄膜晶体管的栅极可以被配置为所述驱动模块101的控制端07，所述存储模块106可以包括电容，所述电容的两端可以被配置为所述存储模块106的两端，即所述电容连接于所述驱动模块101的所述控制端07和所述输出端01。在一实施例中，如图2所示，所述像素驱动电路100还包括：写入模块107，所述写入模块107的输入端08电性连接数据线108，所述写入模块107的输出端09电性连接所述驱动薄膜晶体管的栅极，所述写入模块107的控制端10电性连接第一扫描线109，其中，所述写入模块107可以包括写入薄膜晶体管。进一步的，如图2所示，所述像素驱动电路100还包括：侦测模块110，所述侦测模块110的输入端11和控制端12分别电性连接侦测线111和第二扫描线112，所述侦测模块110的输出端13电性连接所述驱动模块101的所述输出端01，其中，所述侦测模块110可以包括侦测薄膜晶体管。在一实施例中，如图2所示，所述像素驱动电路100还包括：工作电压模块113，所述工作电压模块113电性连接所述驱动模块101的输入端06以向所述驱动模块101中的所述驱动薄膜晶体管提供工作电压。\n\n[0045]具体的，在显示阶段，所述第一扫描线109和所述第二扫描线112分别可以控制所述写入模块107中的所述写入薄膜晶体管和所述侦测模块110中的所述侦测薄膜晶体管打开，所述数据线108通过所述写入模块107中的所述写入薄膜晶体管向所述存储模块106和所述驱动模块101的所述控制端07写入数据信号，所述存储模块106维持所述驱动模块101的所述控制端07维持为对应的所述数据信号，同时所述侦测线111通过所述侦测模块110中的所述侦测薄膜晶体管向所述驱动模块101的所述输出端01写入侦测数据。\n\n[0046]具体的，在侦测阶段，所述第一扫描线109和所述第二扫描线112分别仍然可以控制所述写入模块107中的所述写入薄膜晶体管和所述侦测模块110中的所述侦测薄膜晶体管打开，所述数据线108仍然通过所述写入模块107中的所述写入薄膜晶体管向所述存储模块106和所述驱动模块101的所述控制端07写入数据信号，但是，同时所述侦测线111通过所述侦测模块110中的所述侦测薄膜晶体管读取所述驱动模块101的所述输出端01的输出电压。需要注意的是，在所述侦测阶段和所述显示阶段之间，所述侦测线111处于悬空状态，此时所述存储模块106、所述驱动模块101的所述控制端07和所述输出端01形成一回路，所述存储模块106放电导致所述驱动模块101的所述输出端01的电位上升，当所述驱动模块101的所述控制端07和所述输出端01的电位差等于所述驱动模块101中的所述驱动薄膜晶体管此时的阈值电压时，所述驱动薄膜晶体管截止，即在所述侦测阶段，可以根据所述驱动模块101的所述控制端07和所述侦测线111读取的所述输出电压的差值得到所述驱动薄膜晶体管此时的阈值电压。\n\n[0047]可以理解的，在所述显示阶段、所述侦测阶段或者其它阶段中，当所述发光模块103的所述输入端04的电压大于所述发光模块103的所述输出端05的电压时，所述发光模块103即可发光，所述驱动模块101的所述输出端01的电压可以控制流经所述发光模块103的电流大小，以控制所述发光模块103的发光情况。具体的，如图4所示，L4、L5、L6分别为在所述发光模块103所在的支路上串联了所述调节模块104后的红光Micro LED、绿光Micro LED和蓝光Micro LED的电流-电压曲线，L5为OLED的电流-电压曲线，具体的，横坐标表示对应的Micro LED或者OLED两端的电压，纵坐标表示流经对应的Micro LED或者OLED的电流。进一步的，此处图1中的L1至L3可以理解为图2中去除所述调节模块104后的所述发光模块103分别为红光Micro LED、绿光Micro LED、蓝光Micro LED和OLED时对应的电流-电压曲线，图4中的L4至L7可以理解为图2中包含所述调节模块104的所述发光模块103分别为红光MicroLED、绿光Micro LED、蓝光Micro LED和OLED时对应的电流-电压曲线。对比图4和图1可知，图4中的Micro LED的电流-电压曲线相比于图1中的Micro LED的电流-电压曲线较平坦，即在所述发光模块103所在的支路上串联了所述调节模块104后，所述发光模块103为MicroLED时对应的像素从最小灰阶值到最大灰阶值过程中对应的Micro LED两端的电压变化值有所增加，降低了对所述驱动模块101的电压输出的变化值的需求。根据上文分析可知，即本实施例通过在所述发光模块103所在的支路上串联所述调节模块104，可以使得所述发光模块103的两端电压变化值小于所述驱动模块101的所述输出端01的电压变化值，即可以有效减小所述发光模块103的两端电压变化值，以使得流经所述发光模块103的电流的变化值也可以足够小，以使得发光模块103对应的像素可以实现较多的灰阶级数，以丰富画面的色彩表现力和增加画面的色彩层次。\n\n[0048]本申请实施例还提供了显示面板，所述显示面板包括如上文任一项所述的像素驱动电路。\n\n[0049]本申请提供了像素驱动电路和显示面板，所述像素驱动电路包括驱动模块、第一电压模块、发光模块和调节模块，所述发光模块的两端分别电性连接所述驱动模块和所述第一电压模块，所述发光模块包括微发光二极管，并且所述调节模块和所述发光模块串联连接；因此，本方案中通过在所述发光模块的支路上串联所述调节模块，即所述调节模块和所述发光模块共同分担所述驱动模块的输出电压，使得所述微发光二极管两端的电压变化的最小值可以小于所述驱动模块的输出电压变化的最小值，进一步的，流经所述微发光二极管的电流的变化值也可以变化地足够小，以使得所述微发光二极管对应的像素可以实现较多的灰阶级数显示，以丰富画面的色彩表现力和增加画面的色彩层次。');
INSERT INTO `os_patent_instruction_text` VALUES (10909, 23963, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种像素驱动电路及其驱动方法、一种显示面板。\n\n背景技术\n\n[0002]像素驱动电路中驱动晶体管的阈值电压随时间发生漂移，导致发光器件出现亮度不均的问题，影响显示面板的显示质量。\n\n发明内容\n\n[0003]本申请实施例提供一种像素驱动电路及其驱动方法、一种显示面板，可以改善因驱动晶体管阈值电压漂移导致的发光器件显示不均的问题。\n\n[0004]本申请实施例提供一种像素驱动电路，所述像素驱动电路包括发光器件、驱动晶体管，第一重置晶体管及存储电容。所述驱动晶体管与所述发光器件串联于第一电压端和第二电压端之间；所述第一重置晶体管连接于所述驱动晶体管的栅极与所述驱动晶体管的源极或漏极中的一者之间；所述存储电容的第一端与数据电压端电性连接，所述存储电容的第二端与所述驱动晶体管的栅极连接。\n\n[0005]可选地，在本申请的一些实施例中，所述像素驱动电路还包括：数据晶体管、第二重置晶体管。所述数据晶体管连接于所述数据电压端与所述存储电容的所述第一端之间；所述第二重置晶体管连接于重置电压端与所述存储电容的所述第一端之间，所述第二重置晶体管的栅极与所述第一重置晶体管的栅极均与同一重置控制信号线连接。\n\n[0006]可选地，在本申请的一些实施例中，所述像素驱动电路还包括：发光控制模块，所述发光模块与所述发光器件、所述驱动晶体管串联。所述发光控制模块包括第一开关晶体管，所述第一开关晶体管连接于所述发光器件与所述驱动晶体管的所述源极或所述漏极中的所述一者之间。\n\n[0007]可选地，在本申请的一些实施例中，所述发光控制模块还包括：第二开关晶体管。所述第二开关晶体管连接于所述驱动晶体管的所述源极或所述漏极中的另一者与所述第一电压端之间。\n\n[0008]可选地，在本申请的一些实施例中，所述像素驱动电路还包括：选路晶体管，所述选路晶体管与所述发光器件和所述第一开关晶体管并联。\n\n[0009]可选地，在本申请的一些实施例中，所述发光器件包括有机发光二极管、次毫米发光二极管，或微型发光二极管。\n\n[0010]可选地，在本申请的一些实施例中，所述有机发光二极管包括正型有机发光二极管，所述正型有机发光二极管的串联于所述第二电压端与所述驱动晶体管的所述源极之间。\n\n[0011]可选地，在本申请的一些实施例中，所述有机发光二极管包括倒置型有机发光二极管，所述倒置型有机发光二极管串联于所述第一电压端与所述驱动晶体管的所述漏极之间，加载于所述第一电压端的第一电压高于加载于所述第二电压端的第二电压。\n\n[0012]本申请的实施例还提供一种像素驱动电路的驱动方法，用于驱动任一上述的像素驱动电路，所述驱动方法包括：\n\n[0013]重置阶段，利用所述第一重置晶体管、所述第一电压端重置所述驱动晶体管的栅极电压。\n\n[0014]侦测阶段，利用所述第一重置晶体管及所述第二电压端将所述驱动晶体管的阈值电压传输至所述驱动晶体管的所述栅极。\n\n[0015]发光阶段，利用所述驱动晶体管产生驱动电流驱动所述发光器件发光。\n\n[0016]本申请的实施例还提供一种显示面板，所述显示面板包括任一上述的像素驱动电路。\n\n[0017]本申请实施例提供的像素驱动电路及其驱动方法、显示面板，所述像素驱动电路包括发光器件、驱动晶体管，第一重置晶体管及存储电容。所述驱动晶体管与所述发光器件串联于第一电压端和第二电压端之间；所述第一重置晶体管连接于所述驱动晶体管的栅极与所述驱动晶体管的源极或漏极中的一者之间；所述存储电容的第一端与数据电压端电性连接，所述存储电容的第二端与所述驱动晶体管的所述栅极连接。通过所述第一重置晶体管及所述第一电压端重置所述驱动晶体管的栅极电压，通过所述第一重置晶体管及所述第二电压端将所述驱动晶体管的阈值电压传输至所述驱动晶体管的栅极，从而在所述驱动晶体管驱动所述发光器件发光时，降低所述驱动晶体管的阈值电压对所述驱动晶体管驱动电流的影响，保证所述发光器件发光的稳定性。\n\n附图说明\n\n[0018]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1A～图1D是本申请实施例提供的像素驱动电路的结构示意图；\n\n[0020]图2A是图1A和图1D所示的像素驱动电路的工作时序图；\n\n[0021]图2B是图1B所示的像素驱动电路的工作时序图；\n\n[0022]图2C是图1C所示的像素驱动电路的工作时序图；\n\n[0023]图3A～图3C是本申请实施例提供的显示面板的结构示意图；\n\n[0024]图4A～图4D是本申请的实施例提供的像素驱动电路的结构示意图。\n\n具体实施方式\n\n[0025]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0026]如图1A～图1D是本申请实施例提供的像素驱动电路的结构示意图；本申请的实施例提供一种像素驱动电路，所述像素驱动电路包括发光器件D1、驱动晶体管Td。\n\n[0027]可选地，所述发光器件D1包括有机发光二极管、次毫米发光二极管或微型发光二极管。\n\n[0028]进一步地，所述有机发光二极管包括倒置型有机发光二极管，所述倒置型有机发光二极管串联于第一电压端OVDD与所述驱动晶体管Td的漏极之间，如图1A～图1B和图1D所示。\n\n[0029]进一步地，所述有机发光二极管包括正型有机发光二极管，所述正型有机发光二极管串联于第二电压端OVSS与所述驱动晶体管Td的源极之间，如图1C所示。\n\n[0030]所述驱动晶体管Td与所述发光器件D1串联在第一电压端OVDD与第二电压端OVSS之间，所述驱动晶体管Td用于根据相应的数据信号Vdata产生驱动所述发光器件D1发光的驱动电流I。具体地，所述驱动晶体管Td连接于所述发光器件D1的阴极与所述第二电压端OVSS之间，如图1A～图1B和图1D所示；或所述驱动晶体管Td连接于所述发光器件D1的阳极与所述第一电压端OVDD之间，如图1C所示。\n\n[0031]可选地，所述驱动晶体管Td包括场效应晶体管；进一步地，所述场效应晶体管包括薄膜晶体管。可选地，所述驱动晶体管Td包括无机半导体层或有机半导体层。进一步地，所述无机半导体层包括非晶硅半导体、多晶硅半导体、氧化物半导体等材料。\n\n[0032]请继续参阅图1A～图1D，所述像素驱动电路还包括第一重置晶体管Ts1、第二重置晶体管Ts2、存储电容Cs1及数据晶体管Tda。\n\n[0033]所述第一重置晶体管Ts1连接于所述驱动晶体管Td的栅极与所述驱动晶体管Td的源极或漏极中的一者之间，以用于通过所述第一电压端OVDD使所述驱动晶体管Td的栅极电压大于所述第二电压端OVSS的电压值，并用于通过所述第二电压端OVSS将所述驱动晶体管Td的阈值电压Vth传输至所述驱动晶体管Td的栅极。所述第二重置晶体管Ts2连接于所述存储电容Cs1的第一端与重置电压端VIL之间。具体地，所述第一重置晶体管Ts1的栅极、所述第二重置晶体管Ts2的栅极均与重置控制信号线STL连接，所述第一重置晶体管Ts1的所述源极或所述漏极中的一者与所述驱动晶体管Td的源极或漏极中的一者连接，所述第一重置晶体管Ts1的所述源极或所述漏极中的另一者与所述驱动晶体管Td的栅极连接。所述第二重置晶体管Ts2的源极或漏极中的一者与所述存储电容Cs1的所述第一端连接，所述第二重置晶体管Ts2的所述源极或所述漏极中的另一者与重置电压端VIL连接。\n\n[0034]所述存储电容Cs1的第二端与所述驱动晶体管Td的栅极、所述第一重置晶体管Ts1的源极或漏极中的一者连接，所述第一重置晶体管Ts1及所述第二重置晶体管Ts2用于根据所述重置控制信号ST将重置电压信号VI和所述第一电压端OVDD载入的第一电压信号VDD传输至所述存储电容Cs1的两端，以用于重置所述存储电容Cs1的两端电压，从而重置所述驱动晶体管Td的栅极电压。其中，所述第一电压端OVDD载入的第一电压信号VDD的电压值大于所述第二电压端OVSS载入的第二电压信号的电压值。\n\n[0035]所述数据晶体管Tda连接于数据电压端DL与所述存储电容Cs1的所述第一端之间，以用于根据数据写入控制信号WR将数据电压端DL载入的数据信号Vdata通过所述存储电容Cs1耦合至所述驱动晶体管Td的栅极，使所述驱动晶体管Td可根据所述数据信号Vdata产生不同的驱动电流，从而使所述发光器件D1的具有不同的发光强度。\n\n[0036]其中，所述存储电容Cs1通过所述数据晶体管Tda与数据电压端DL电性连接。具体地，所述数据晶体管Tda的栅极与数据写入控制信号线WRL连接，所述数据晶体管Tda的源极或漏极中的一者与所述第二重置晶体管Ts2的所述源极或所述漏极中与所述存储电容Cs1连接的一者连接，所述数据晶体管Tda的所述源极或所述漏极中的另一者与所述数据电压端DL连接。\n\n[0037]可选地，所述第一重置晶体管Ts1、所述第二重置晶体管Ts2、所述数据晶体管Tda包括场效应晶体管。可选地，所述第一重置晶体管Ts1、所述第二重置晶体管Ts2、所述数据晶体管Tda包括无机半导体层或有机半导体层。\n\n[0038]进一步地，请继续参阅图1A及图1C～图1D，为避免所述像素驱动电路在实现重置所述驱动晶体管Td的栅极电压的工作状态，和，向所述驱动晶体管Td的所述栅极传输所述阈值电压Vth的工作状态之间出现干扰，所述像素驱动电路还包括发光控制模块，所述发光控制模块用于根据发光控制信号EM使所述驱动晶体管Td产生所述驱动电流I，以驱动所述发光器件D1发光；并根据所述发光控制信号EM实现所述第一重置晶体管Ts1与所述第一电压端OVDD的电性连接，以重置所述驱动晶体管Td的栅极电压，或根据所述发光控制信号EM断开所述第一重置晶体管Ts1与所述第一电压端OVDD的电性连接，以通过所述第一重置晶体管Ts1及所述第二电压端OVSS将所述阈值电压Vth传输至所述驱动晶体管Td的栅极。\n\n[0039]具体地，所述发光控制模块包括第一开关晶体管Ts11，所述第一开关晶体管Ts11连接于所述发光器件D1与所述驱动晶体管Td的所述源极或所述漏极中的一者之间。\n\n[0040]进一步地，在所述发光器件D1的阳极与所述第一电压端OVDD连接时，所述第一开关晶体管Ts11连接于所述发光器件D1的阴极与所述驱动晶体管Td的所述源极或所述漏极中的一者、所述第一重置晶体管Ts1的所述源极或所述漏极中的一者之间，如图1A～图1B和图1D所示。具体地，所述第一开关晶体管Ts11的栅极与发光控制信号线EML连接，所述第一开关晶体管Ts11的源极或漏极中的一者与所述驱动晶体管Td的所述源极或所述漏极中的一者、所述第一重置晶体管Ts1的所述源极或所述漏极中的一者连接，所述第一开关晶体管Ts11的所述源极或所述漏极中的另一者与所述发光器件D1阴极连接。\n\n[0041]进一步地，在所述发光器件D1的阴极与所述第二电压端OVSS连接时，所述发光控制模块还包括第二开关晶体管Ts12，所述第二开关晶体管Ts12连接于所述驱动晶体管Td的所述源极或所述漏极中的另一者与所述第一电压端OVDD之间，此时所述第一开关晶体管Ts11连接于所述发光器件D1的阳极与所述驱动晶体管Td的所述源极或所述漏极中的一者之间，如图1C所示。具体地，所述第一开关晶体管Ts11的栅极和所述第二开关晶体管Ts12的栅极均与所述发光控制信号线EML连接，所述第一开关晶体管Ts11的源极或漏极中的一者与所述驱动晶体管Td的所述源极或所述漏极中的一者连接，所述第一开关晶体管Ts11的所述源极或所述漏极中的另一者与所述发光器件D1的阳极连接；所述第二开关晶体管Ts12的源极或漏极中的一者与所述驱动晶体管Td的所述源极或所述漏极中的另一者、所述第一重置晶体管Ts1的所述源极或所述漏极中的一者连接，所述第二开关晶体管Ts12的所述源极或所述漏极中的另一者与所述第一电压端OVDD连接。\n\n[0042]进一步地，如图1B～图1C所示，为使重置所述驱动晶体管Td的栅极电压，或将所述驱动晶体管Td的所述阈值电压Vth传输至所述驱动晶体管Td的所述栅极时，所述发光器件D1不发光，所述像素驱动电路还可包括选路晶体管Ts3。所述选路晶体管Ts3与所述发光器件D1和所述第一开关晶体管Ts11并联，以使所述发光器件D1所在的支路可在重置所述驱动晶体管Td的栅极电压，或将所述驱动晶体管Td的所述阈值电压Vth传输至所述驱动晶体管Td的栅极时被短路，从而使所述像素驱动电路可根据选路控制信号ST1通过所述选路晶体管Ts3配合所述第一重置晶体管Ts1重置所述驱动晶体管Td的栅极电压，或根据选路控制信号ST1通过所述选路晶体管Ts3使所述驱动晶体管Td的阈值电压传输至所述驱动晶体管Td的栅极。\n\n[0043]具体地，请参阅图1B，在所述发光器件D1的阳极与所述第一电压端OVDD连接时，所述选路晶体管Ts3的栅极与选路控制信号线STL1连接，所述选路晶体管Ts3的源极或漏极中的一者与所述发光器件D1的阳极、所述第一电压端OVDD连接，所述选路晶体管Ts3的所述源极或所述漏极中的另一者与所述第一开关晶体管Ts11的源极或漏极中的一者、所述驱动晶体管Td的源极或漏极中的一者、所述第一重置晶体管Ts1的源极或漏极中的一者连接。请参阅图1C，在所述发光器件D1的阴极与所述第二电压端OVSS连接时，所述选路晶体管Ts3的源极或漏极中的一者与所述发光器件D1的阴极、所述第二电压端OVSS连接，所述选路晶体管Ts3的所述源极或所述漏极中的另一者与所述第一开关晶体管Ts11的源极或漏极中的一者、所述驱动晶体管Td的源极或漏极中的一者连接。\n\n[0044]其中，在图1A和图1D所示的像素驱动电路中，所述发光控制模块不仅可以实现对所述发光器件D1发光时刻的控制，还可以配合所述第一电压端OVDD、所述第二电压端OVSS及所述第一重置晶体管Ts1实现对所述驱动晶体管Td的栅极电压的重置及阈值电压的传输，使得所述发光控制模块复合多种功能，有利于降低所述像素驱动电路所用器件的数量，从而有利于降低生产成本及生产难度。\n\n[0045]可选地，所述第一开关晶体管Ts11、所述第二开关晶体管Ts12、所述选路晶体管Ts3包括场效应晶体管。可选地，所述第一开关晶体管Ts11、所述第二开关晶体管Ts12、所述选路晶体管Ts3包括无机半导体层或有机半导体层。\n\n[0046]可选地，所述驱动晶体管Td、所述第一重置晶体管Ts1、所述第二重置晶体管Ts2、所述第一开关晶体管Ts11、所述第二开关晶体管Ts12、所述选路晶体管Ts3、所述数据晶体管Tda包括N型晶体管或P型晶体管。\n\n[0047]可选地，一所述像素驱动电路可同时驱动多个所述发光器件D1发光，如图1D所示。此外，还可得到与图1B～图1C对应的所述像素驱动电路中，一所述像素驱动电路同时驱动多个所述发光器件D1发光的方案，在此不再进行赘述。\n\n[0048]本申请还提供一种像素驱动电路的驱动方法，用于驱动上述的像素驱动电路。具体地，所述像素驱动电路的驱动方法包括重置阶段、侦测阶段及发光阶段。\n\n[0049]在所述重置阶段，利用所述第一重置晶体管、所述第一电压端重置所述驱动晶体管的栅极电压。其中，所述第一电压端OVDD载入的所述第一电压信号VDD可通过所述发光器件D1、所述第一开关晶体管Ts11传输至所述第一重置晶体管Ts1的源极或漏极中的一者；或通过所述选路晶体管Ts3传输至所述第一重置晶体管Ts1的源极或漏极中的一者；或通过所述第二开关晶体管Ts12传输至所述第一重置晶体管Ts1的源极或漏极中的一者。\n\n[0050]在所述侦测阶段，利用所述第一重置晶体管Ts1及所述第二电压端OVSS将所述阈值电压Vth传输至所述驱动晶体管Td的所述栅极。其中，所述驱动晶体管Td的源极或漏极中的一者可直接与所述第二电压端OVSS电性连接，或通过所述选路晶体管Ts3与所述第二电压端OVSS实现电性连接。\n\n[0051]在所述发光阶段，所述驱动晶体管Td产生所述驱动电流I驱动所述发光器件D1发光。\n\n[0052]进一步地，在所述发光阶段之前，所述像素驱动电路的驱动方法还包括数据写入阶段。在所述数据写入阶段，利用所述数据晶体管Tda将所述数据信号Vdata通过所述存储电容Cs1耦合至所述驱动晶体管Td的栅极，以使所述驱动晶体管Td在所述发光阶段根据所述数据信号Vdata为所述发光器件D1提供相应的驱动电流I。\n\n[0053]进一步地，在所述侦测阶段与所述数据写入阶段之间还包括第一维持阶段，在所述数据写入阶段及所述发光阶段之间还包括第二维持阶段，在所述第一维持阶段，所述驱动晶体管Td的栅极电压与在所述重置阶段时的栅极电压保持一致。在所述第二维持阶段，所述驱动晶体管Td的栅极电压与在所述数据写入阶段时的栅极电压保持一致。\n\n[0054]下面以所述驱动晶体管Td、所述第一重置晶体管Ts1、所述第二重置晶体管Ts2、所述第一开关晶体管Ts11、所述第二开关晶体管Ts12、所述选路晶体管Ts3及所述数据晶体管Tda均为N型晶体管，所述驱动晶体管Td的源极与所述第二电压端OVSS电性连接，所述驱动晶体管Td的漏极与所述第一电压端OVDD电性连接为例，结合所述像素驱动电路的驱动方法对如图1A～图1D所示的所述像素驱动电路的工作原理进行说明。\n\n[0055]具体地，如图2A是图1A和图1D所示的像素驱动电路的工作时序图。请继续参阅图1A、图1D及图2A。\n\n[0056]在所述重置阶段S1：所述发光控制信号线EML载入的所述发光控制信号EM为高电平，所述重置控制信号线STL载入的所述重置控制信号ST为高电平；所述第一重置晶体管Ts1、所述第二重置晶体管Ts2响应所述重置控制信号ST导通，所述第一开关晶体管Ts11响应所述发光控制信号EM导通；所述重置电压信号VI经所述第二重置晶体管Ts2对第一节点M处的电位重置，所述第一电压信号VDD经所述第一开关晶体管Ts11及所述第一重置晶体管Ts1对第二节点G处的电位重置，从而使所述驱动晶体管Td的栅极电压被重置。而所述第一重置晶体管Ts1导通使得所述驱动晶体管Td呈二极管式连接，所述驱动晶体管Td导通，所述发光器件D1因所述驱动晶体管Td、所述第一开关晶体管Ts11的导通而发光。其中，所述第一节点M及所述第二节点G分别对应所述存储电容Cs1的两端。\n\n[0057]在所述侦测阶段S2：所述发光控制信号线EML载入的所述发光控制信号EM为低电平，所述重置控制信号线STL载入的所述重置控制信号ST为高电平；所述第一重置晶体管Ts1及所述第二重置晶体管Ts2保持导通，所述第一开关晶体管Ts11截止；所述第一重置晶体管Ts1导通使得所述驱动晶体管Td仍呈二极管式连接，所述驱动晶体管Td的栅极电压通过所述驱动晶体管Td向所述第二电压端OVSS释放，直至所述驱动晶体管Td的所述栅极电压等于所述驱动晶体管Td的阈值电压Vth，所述驱动晶体管Td关断，使得所述阈值电压Vth被传输至所述驱动晶体管Td的所述栅极(即所述第二节点G处)。\n\n[0058]在所述第一维持阶段S3：所述发光控制信号EM、所述重置控制信号ST及所述数据写入控制信号WR均为低电平，所述驱动晶体管Td、所述第一重置晶体管Ts1、所述第二重置晶体管Ts2、所述第一开关晶体管Ts11及所述数据晶体管Tda均关断，所述驱动晶体管Td栅极电压保持为所述阈值电压Vth。\n\n[0059]在所述数据写入阶段S4：所述数据写入控制信号线WRL所载入的所述数据写入控制信号WR为高电平，所述数据晶体管Tda响应所述数据写入控制信号WR导通，所述数据信号Vdata被传输至所述第一节点M处，所述第一节点M处的电位由VI变为Vdata，变化量为Vdata-VI。相应地，由于所述存储电容Cs1的存在，所述第二节点G处的电位亦具有所述变化量Vdata-VI，因此，所述驱动晶体管Td的栅极电压由Vth变为Vdata-VI+Vth。\n\n[0060]在所述第二维持阶段S5：所述发光控制信号EM、所述重置控制信号ST及所述数据写入控制信号WR均为低电平，所述驱动晶体管Td、所述第一重置晶体管Ts1、所述第二重置晶体管Ts2、所述第一开关晶体管Ts11及所述数据晶体管Tda均关断，所述驱动晶体管Td的栅极电压保持为Vdata-VI+Vth。\n\n[0061]在所述发光阶段S6：所述发光控制信号EM为高电平，所述第一开关晶体管Ts11导通，所述驱动晶体管Td的栅极电压小于所述第一电压信号VDD，所述驱动晶体管Td工作在饱和区，所述驱动晶体管Td产生驱动所述发光器件D1发光的驱动电流I。\n\n[0062]其中，由于所述驱动晶体管Td的源极与所述第二电压端OVSS直接连接，所以，所述驱动晶体管Td的栅源电压Vgs＝Vg＝Vdata-VI+Vth。根据Vgs＝Vdata-VI+Vth和I＝(CoxμmW/L)*(Vgs-Vth)2/2(其中，Cox、μm、W、L分别为晶体管的单位面积沟道电容、沟道迁移率、沟道宽和沟道长)可得；I＝(CoxμmW/L)*(Vdata-VI+Vth-Vth)2/2＝(CoxμmW/L)*(Vdata-VI)2/2；以此降低所述阈值电压Vth对所述驱动电流I的影响，保证所述发光器件D1发光的稳定性。\n\n[0063]可选地，所述重置阶段S1可作为所述像素驱动电路开始工作时的第一个工作阶段，也可作为所述像素驱动电路即将结束工作时的最后一个工作阶段，以在所述像素驱动电路的一个工作周期内，标志所述发光器件发光状态的结束。\n\n[0064]可选地，在所述像素驱动电路的一个工作周期内，所述重置阶段S1所占的时长小于所述发光阶段S6所占据的时长，以在所述重置阶段S1及所述侦测阶段S2使所述发光器件D1发光强度随所述驱动晶体管Td的栅极电压在极短的时间内实现由亮至暗的变动，完成所述发光器件D1的熄灭。\n\n[0065]具体地，如图2B是图1B所示的像素驱动电路的工作时序图。请继续参阅图1B及图2B。\n\n[0066]在所述重置阶段S1：所述发光控制信号EM为低电平，所述重置控制信号ST为高电平，所述选路控制信号线STL1载入的所述选路控制信号ST1为高电平；所述第一重置晶体管Ts1、所述第二重置晶体管Ts2响应所述重置控制信号ST导通，所述选路晶体管Ts3响应所述选路控制信号ST1导通；所述重置电压信号VI经所述第二重置晶体管Ts2重置第一节点M处的电位，所述第一电压信号VDD经所述选路晶体管Ts3及所述第一重置晶体管Ts1重置第二节点G处的电位，从而使所述驱动晶体管Td的栅极电压被重置。\n\n[0067]在所述侦测阶段S2：所述发光控制信号EM为低电平，所述重置控制信号ST为高电平，所述选路控制信号ST1为低电平；所述第一重置晶体管Ts1及所述第二重置晶体管Ts2保持导通，所述第一开关晶体管Ts11、所述选路晶体管Ts3截止；所述第一重置晶体管Ts1导通使得所述驱动晶体管Td仍呈二极管式连接，所述驱动晶体管Td的栅极电压通过所述驱动晶体管Td向所述第二电压端OVSS释放，直至所述驱动晶体管Td的所述栅极电压等于所述驱动晶体管Td的阈值电压Vth，所述驱动晶体管Td关断，使得所述阈值电压Vth被传输至所述驱动晶体管Td的所述栅极(即所述第二节点G处)。\n\n[0068]在所述第一维持阶段S3：所述发光控制信号EM、所述重置控制信号ST及所述数据写入控制信号WR均为低电平，所述驱动晶体管Td、所述第一重置晶体管Ts1、所述第二重置晶体管Ts2、所述第一开关晶体管Ts11及所述数据晶体管Tda均关断，所述驱动晶体管Td栅极电压保持为所述阈值电压Vth。\n\n[0069]在所述数据写入阶段S4：所述数据写入控制信号线WRL所载入的所述数据写入控制信号WR为高电平，所述数据晶体管Tda响应所述数据写入控制信号WR导通，所述数据信号Vdata被传输至所述第一节点M处，所述第一节点M处的电位由VI变为Vdata，变化量为Vdata-VI。相应地，由于所述存储电容Cs1的存在，所述第二节点G处的电位亦具有所述变化量Vdata-VI，因此，所述驱动晶体管Td的栅极电压由Vth变为Vdata-VI+Vth。\n\n[0070]在所述第二维持阶段S5：所述发光控制信号EM、所述重置控制信号ST及所述数据写入控制信号WR均为低电平，所述驱动晶体管Td、所述第一重置晶体管Ts1、所述第二重置晶体管Ts2、所述第一开关晶体管Ts11及所述数据晶体管Tda均关断，所述驱动晶体管Td的栅极电压保持为Vdata-VI+Vth。\n\n[0071]在所述发光阶段S6：所述发光控制信号EM为高电平，所述第一开关晶体管Ts11导通，所述驱动晶体管Td的栅极电压小于所述第一电压信号VDD，所述驱动晶体管Td工作在饱和区，所述驱动晶体管Td产生驱动所述发光器件D1发光的驱动电流I。\n\n[0072]其中，所述驱动晶体管Td的源极与所述第二电压端OVSS直接连接，所述驱动晶体管Td的栅源电压Vgs＝Vg＝Vdata-VI+Vth。由Vgs＝Vdata-VI+Vth和I＝(CoxμmW/L)*(Vgs-Vth)2/2可得；I＝(CoxμmW/L)*(Vdata-VI)2/2；以此降低所述阈值电压Vth对所述驱动电流I的影响，保证所述发光器件D1发光的稳定性。\n\n[0073]具体地，如图2C是图1C所示的像素驱动电路的工作时序图。请继续参阅图1C及图2C。\n\n[0074]在所述重置阶段S1：所述发光控制信号EM为高电平，所述重置控制信号ST为高电平，所述选路控制信号ST1为低电平；所述第一重置晶体管Ts1、所述第二重置晶体管Ts2响应所述重置控制信号ST导通，所述第一开关晶体管Ts11、所述第二开关晶体管Ts12响应所述发光控制信号EM导通，所述选路晶体管Ts3截止；所述重置电压信号VI经所述第二重置晶体管Ts2重置第一节点M处的电位，所述第一电压信号VDD经所述第二开关晶体管Ts12及所述第一重置晶体管Ts1重置第二节点G处的电位，从而使所述驱动晶体管Td的栅极电压被重置。\n\n[0075]在所述侦测阶段S2：所述发光控制信号EM为低电平，所述重置控制信号ST为高电平，所述选路控制信号ST1为高电平；所述第一重置晶体管Ts1及所述第二重置晶体管Ts2保持导通，所述第一开关晶体管Ts11、所述第二开关晶体管Ts12截止，所述选路晶体管Ts3导通，所述驱动晶体管Td的源极通过所述选路晶体管Ts3与所述第二电压端OVSS电性连接，所述驱动晶体管Td的源极电压为Vs；所述第一重置晶体管Ts1导通使得所述驱动晶体管Td仍呈二极管式连接，所述驱动晶体管Td的栅极电压通过所述驱动晶体管Td及所述选路晶体管Ts3向所述第二电压端OVSS释放，直至所述驱动晶体管Td的栅源电压Vgs为阈值电压Vth(即所述驱动晶体管Td的栅极电压Vg＝Vgs+Vs＝Vth+Vs)，所述驱动晶体管Td关断，使得所述阈值电压Vth被传输至所述驱动晶体管Td的所述栅极。\n\n[0076]在所述第一维持阶段S3：所述发光控制信号EM、所述重置控制信号ST及所述数据写入控制信号WR均为低电平，所述驱动晶体管Td、所述第一重置晶体管Ts1、所述第二重置晶体管Ts2、所述第一开关晶体管Ts11、所述第二开关晶体管Ts12及所述数据晶体管Tda均关断，所述驱动晶体管Td的栅极电压维持所述侦测阶段S2时的电压值。\n\n[0077]在所述数据写入阶段S4：所述选路控制信号ST1为高电平，所述数据写入控制信号线WRL所载入的所述数据写入控制信号WR为高电平，所述数据晶体管Tda响应所述数据写入控制信号WR导通，所述选路晶体管Ts3导通，所述驱动晶体管Td的源极通过所述选路晶体管Ts3与所述第二电压端OVSS电性连接；所述数据信号Vdata被传输至所述第一节点M处，所述第一节点M处的电位由VI变为Vdata，变化量为Vdata-VI。相应地，由于所述存储电容Cs1的存在，所述第二节点G处的电位亦具有所述变化量Vdata-VI，因此，所述驱动晶体管Td的栅极电压Vg由Vth+Vs变为Vdata-VI+Vth+Vs。\n\n[0078]在所述第二维持阶段S5：所述发光控制信号EM、所述重置控制信号ST及所述数据写入控制信号WR均为低电平，所述驱动晶体管Td、所述第一重置晶体管Ts1、所述第二重置晶体管Ts2、所述第一开关晶体管Ts11、所述第二开关晶体管Ts12及所述数据晶体管Tda均关断，所述驱动晶体管Td的栅极电压维持所述数据写入阶段S4时的电压值。\n\n[0079]在所述发光阶段S6：所述发光控制信号EM为高电平，所述第一开关晶体管Ts11导通，所述驱动晶体管Td的栅极电压小于所述第一电压信号VDD，所述驱动晶体管Td工作在饱和区，所述驱动晶体管Td产生驱动所述发光器件D1发光的驱动电流I。\n\n[0080]其中，由于Vgs＝Vg-Vs＝Vdata-VI+Vth+Vs-Vs，因此，Vgs＝Vdata-VI+Vth。则由I＝(CoxμmW/L)*(Vgs-Vth)2/2可得所述像素驱动电路在所述发光阶段S6产生的所述驱动电流I＝(CoxμmW/L)*(Vdata-VI)2/2；以此降低所述阈值电压Vth对所述驱动电流I的影响，保证所述发光器件D1发光的稳定性。\n\n[0081]如图3A～图3C是本申请实施例提供的显示面板的结构示意图，如图4A～图4D是本申请的实施例提供的像素驱动电路的结构示意图。其中，图3C是图3B所示的显示面板沿A-A剖切的剖视图。\n\n[0082]本申请的实施例还提供一种显示面板，所述显示面板包括多个发光器件D1及与像素驱动电路，所述像素驱动电路与对应的所述发光器件D1连接。\n\n[0083]可选地，每一所述发光器件D1的阳极与第一电压端OVDD连接，以使多个所述发光器件D1采用共阳极接法，如图4A～图4B及图4D所示；或每一所述发光器件D1的阴极与第二电压端OVSS连接，以使多个所述发光器件D1采用共阴极接法，如图4C所示。\n\n[0084]所述像素驱动电路包括：第一晶体管T1、第二晶体管T2、第三晶体管T3及第一电容C1。\n\n[0085]所述第一晶体管T1的源极或漏极中的一者与对应的所述发光器件D1电性连接，所述第一晶体管T1的所述源极或所述漏极中的另一者与所述第一电压端OVDD或所述第二电压端OVSS连接。具体地，请参阅图4A～图4B及图4D，在每一所述发光器件D1的阳极与所述第一电压端OVDD连接时，所述第一晶体管T1的源极或漏极中的一者与对应的所述发光器件D1的阴极电性连接，所述第一晶体管T1的所述源极或所述漏极中的另一者与所述第二电压端OVSS电性连接。或请参阅图4C，在每一所述发光器件D1的阴极与所述第二电压端OVSS连接时，所述第一晶体管T1的源极或漏极中的一者与对应的所述发光器件D1的阳极电性连接，所述第一晶体管T1的所述源极或所述漏极中的另一者与所述第一电压端OVDD电性连接。\n\n[0086]所述第二晶体管T2的栅极与重置控制信号线STL连接，所述第二晶体管T2的源极或漏极中的一者与所述第一晶体管T1的栅极连接，所述第二晶体管T2的所述源极或所述漏极中的另一者与所述第一晶体管T1的所述源极或所述漏极中的一者连接，如图4A～图4D所示。\n\n[0087]所述第三晶体管T3的栅极与所述重置控制信号线STL连接，所述第三晶体管T3的源极或漏极中的一者与重置电压端VI连接；所述第一电容C1串联于所述第三晶体管T3的所述源极或所述漏极中的另一者与所述第一晶体管T1的所述栅极、所述第二晶体管T2的所述源极或所述漏极中的一者之间，如图4A～图4D所示。\n\n[0088]其中，通过所述第二晶体管T2、所述第三晶体管T3及所述第一电容C1重置所述第一晶体管T1的栅极电压，通过所述第二晶体管T2及所述第二电压端OVSS将所述第一晶体管T1的阈值电压传输至所述第一晶体管T1的所述栅极，以降低所述第一晶体管T1阈值电压对驱动所述发光器件D1发光的驱动电流的影响，保证所述发光器件D1发光的稳定性。\n\n[0089]进一步地，请继续参阅图4A～图4D，所述像素驱动电路还包括：第四晶体管T4，所述第四晶体管T4的栅极与发光控制信号线EML连接，所述第四晶体管T4的源极或漏极中的一者与对应的所述发光器件D1的连接，所述第四晶体管T4的所述源极或所述漏极中的另一者与所述第一晶体管T1的所述源极或所述漏极中的一者连接。具体地，请参阅图4A～图4B及图4D，在每一所述发光器件D1的阳极与所述第一电压端OVDD连接时，所述第四晶体管T4的栅极与发光控制信号线EML连接，所述第四晶体管T4的源极或漏极中的一者与对应的所述发光器件D1的阴极连接，所述第四晶体管T4的所述源极或所述漏极中的另一者与所述第一晶体管T1的所述源极或所述漏极中的一者、所述第二晶体管T2的所述源极或所述漏极中的一者连接。或请参阅图4C，在每一所述发光器件D1的阴极与所述第二电压端OVSS连接时，所述第四晶体管T4的栅极与发光控制信号线EML连接，所述第四晶体管T4的源极或漏极中的一者与对应的所述发光器件D1的阳极连接，所述第四晶体管T4的所述源极或所述漏极中的另一者与所述第一晶体管T1的所述源极或所述漏极中的一者连接。\n\n[0090]进一步地，请继续参阅图4A～图4D，所述像素驱动电路还包括：第五晶体管T5。所述第五晶体管T5的栅极与数据写入控制信号线WRL连接，所述第五晶体管T5的源极或漏极中的一者与数据电压端DL连接，所述第五晶体管T5的所述源极或所述漏极中的另一者与所述第三晶体管T3的所述源极或所述漏极中与所述第一电容C1连接的一者连接。\n\n[0091]进一步地，请继续参阅图4B～图4C，所述像素驱动电路还包括：第六晶体管T6，所述第六晶体管T6的栅极与选路控制信号线STL1连接，所述第六晶体管T6的源极或漏极中的一者与对应的所述发光器件D1连接，所述第六晶体管T6的所述源极或所述漏极中的另一者与所述第一晶体管T1的所述源极或所述漏极中的一者、所述第四晶体管T4的所述源极或所述漏极中的一者连接。具体地，请参阅图4B，在每一所述发光器件D1的阳极与所述第一电压端OVDD连接时，所述第六晶体管T6的栅极与选路控制信号线STL1连接，所述第六晶体管T6的源极或漏极中的一者与对应的所述发光器件D1的阳极连接，所述第六晶体管T6的所述源极或所述漏极中的另一者与所述第一晶体管T1的所述源极或所述漏极中的一者、所述第二晶体管T2的所述源极或所述漏极中的一者、所述第四晶体管T4的所述源极或所述漏极中的一者连接。具体地，请参阅图4C，在每一所述发光器件D1的阴极与所述第二电压端OVSS连接时，所述第六晶体管T6的栅极与选路控制信号线STL1连接，所述第六晶体管T6的源极或漏极中的一者与对应的所述发光器件D1的阴极连接，所述第六晶体管T6的所述源极或所述漏极中的另一者与所述第一晶体管T1的所述源极或所述漏极中的一者、所述第四晶体管T4的所述源极或所述漏极中的一者连接。\n\n[0092]进一步地，请继续参阅图4C，所述像素驱动电路还包括：第七晶体管T7，所述第七晶体管T7的栅极与所述发光控制信号线EML连接，所述第七晶体管T7的源极或漏极中的一者与第一电压端OVDD连接，所述第七晶体管T7的所述源极或所述漏极中的另一者与所述第一晶体管T1的所述源极或所述漏极中的一者、所述第二晶体管T2的所述源极或所述漏极中的一者连接。\n\n[0093]可选地，所述显示面板包括自发光显示面板、被动式发光显示面板、量子点显示面板等。\n\n[0094]进一步地，所述被动式发光显示面板包括液晶显示面板，所述液晶显示面板包括背光源，所述背光源包括所述发光器件D1。\n\n[0095]进一步地，所述自发光显示面板包括所述发光器件D1。可选地，所述发光器件D1包括有机发光二极管、次毫米发光二极管及微型发光二极管。\n\n[0096]请继续参阅图3A及图4A～图4C，所述显示面板包括非显示透光区100a及显示区100b。其中，所述显示面板在所述非显示透光区100a可满足光透光率要求。多个所述发光器件D1与对应的所述像素驱动电路均位于所述显示区100b内，以使所述像素驱动电路驱动对应的所述发光器件发光，使所述显示面板在所述显示区100b实现显示功能。\n\n[0097]请继续参阅图3B和图4A～图4D，所述显示面板包括显示透光区100c及位于所述显示透光区100c外围的主显示区100d。其中，所述显示面板在所述显示透光区100c可兼顾透光率要求及显示要求。在所述主显示区100d内，每一所述像素驱动电路驱动一所述发光器件D1发光。在所述显示透光区100c内，每一所述像素驱动电路可同时驱动多个所述发光器件D1发光，有利于提高所述显示透光区100c的透光率。\n\n[0098]进一步地，所述显示面板还包括传感器，所述传感器正对所述显示透光区100c设置。更进一步地，所述传感器包括光传感器、指纹传感器、摄像头等。\n\n[0099]请继续参阅图3B和图4A～图4D，所述显示面板还包括位于所述主显示区100d与所述显示透光区100c之间的过渡显示区100e，所述过渡显示区100e包括多个所述发光器件D1。驱动位于所述显示透光区100c及所述过渡显示区100e内的所述发光器件D1发光的所述像素驱动电路位于所述过渡显示区100e内，驱动位于所述主显示区100d内的所述发光器件D1发光的所述像素驱动电路对应的位于所述主显示区100d内。\n\n[0100]请继续参阅图3C，所述显示面板包括衬底301，所述发光器件D1及所述像素驱动电路位于所述衬底301上。\n\n[0101]所述显示面板还包括位于所述衬底301上的有源层3021、第一电极层、第二电极层、第三电极层、绝缘层303、平坦层304及像素定义层305。其中，所述第一电极层包括与所述有源层3021对应的栅极3022，所述第二电极层包括与所述有源层3021电性连接的源极及漏极3023，所述第三电极层包括与所述栅极3022对应的电极部3024。所述栅极3022与所述电极部3024形成所述第一电容C1。\n\n[0102]每一所述像素驱动电路的所述第一晶体管T1、所述第二晶体管T2、所述第三晶体管T3、所述第四晶体管T4及所述第五晶体管T5均包括有源层3021、栅极3022、源极及漏极3023。\n\n[0103]每一所述发光器件D1包括阳极3061、阴极3063及位于所述阳极3061与阴极3063之间的发光层3062。可选地，所述发光层3062包括荧光材料、量子点材料、荧光材料等。可选地，所述阳极3061还可位于所述发光层3062远离所述衬底301的一侧，所述阴极3063位于所述发光层3062靠近所述衬底301的一侧。\n\n[0104]可选地，所述显示面板还包括封装层、触控电极、色转换层等未示出部分。\n\n[0105]本申请的实施例还提供一种显示装置，所述显示装置包括上述的任一像素驱动电路或上述的任一显示面板。\n\n[0106]本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种像素驱动电路及其驱动方法、一种显示面板。\n\n背景技术\n\n[0002]像素驱动电路中驱动晶体管的阈值电压随时间发生漂移，导致发光器件出现亮度不均的问题，影响显示面板的显示质量。\n\n发明内容\n\n[0003]本申请实施例提供一种像素驱动电路及其驱动方法、一种显示面板，可以改善因驱动晶体管阈值电压漂移导致的发光器件显示不均的问题。\n\n[0004]本申请实施例提供一种像素驱动电路，所述像素驱动电路包括发光器件、驱动晶体管，第一重置晶体管及存储电容。所述驱动晶体管与所述发光器件串联于第一电压端和第二电压端之间；所述第一重置晶体管连接于所述驱动晶体管的栅极与所述驱动晶体管的源极或漏极中的一者之间；所述存储电容的第一端与数据电压端电性连接，所述存储电容的第二端与所述驱动晶体管的栅极连接。\n\n[0005]可选地，在本申请的一些实施例中，所述像素驱动电路还包括：数据晶体管、第二重置晶体管。所述数据晶体管连接于所述数据电压端与所述存储电容的所述第一端之间；所述第二重置晶体管连接于重置电压端与所述存储电容的所述第一端之间，所述第二重置晶体管的栅极与所述第一重置晶体管的栅极均与同一重置控制信号线连接。\n\n[0006]可选地，在本申请的一些实施例中，所述像素驱动电路还包括：发光控制模块，所述发光模块与所述发光器件、所述驱动晶体管串联。所述发光控制模块包括第一开关晶体管，所述第一开关晶体管连接于所述发光器件与所述驱动晶体管的所述源极或所述漏极中的所述一者之间。\n\n[0007]可选地，在本申请的一些实施例中，所述发光控制模块还包括：第二开关晶体管。所述第二开关晶体管连接于所述驱动晶体管的所述源极或所述漏极中的另一者与所述第一电压端之间。\n\n[0008]可选地，在本申请的一些实施例中，所述像素驱动电路还包括：选路晶体管，所述选路晶体管与所述发光器件和所述第一开关晶体管并联。\n\n[0009]可选地，在本申请的一些实施例中，所述发光器件包括有机发光二极管、次毫米发光二极管，或微型发光二极管。\n\n[0010]可选地，在本申请的一些实施例中，所述有机发光二极管包括正型有机发光二极管，所述正型有机发光二极管的串联于所述第二电压端与所述驱动晶体管的所述源极之间。\n\n[0011]可选地，在本申请的一些实施例中，所述有机发光二极管包括倒置型有机发光二极管，所述倒置型有机发光二极管串联于所述第一电压端与所述驱动晶体管的所述漏极之间，加载于所述第一电压端的第一电压高于加载于所述第二电压端的第二电压。\n\n[0012]本申请的实施例还提供一种像素驱动电路的驱动方法，用于驱动任一上述的像素驱动电路，所述驱动方法包括：\n\n[0013]重置阶段，利用所述第一重置晶体管、所述第一电压端重置所述驱动晶体管的栅极电压。\n\n[0014]侦测阶段，利用所述第一重置晶体管及所述第二电压端将所述驱动晶体管的阈值电压传输至所述驱动晶体管的所述栅极。\n\n[0015]发光阶段，利用所述驱动晶体管产生驱动电流驱动所述发光器件发光。\n\n[0016]本申请的实施例还提供一种显示面板，所述显示面板包括任一上述的像素驱动电路。\n\n[0017]本申请实施例提供的像素驱动电路及其驱动方法、显示面板，所述像素驱动电路包括发光器件、驱动晶体管，第一重置晶体管及存储电容。所述驱动晶体管与所述发光器件串联于第一电压端和第二电压端之间；所述第一重置晶体管连接于所述驱动晶体管的栅极与所述驱动晶体管的源极或漏极中的一者之间；所述存储电容的第一端与数据电压端电性连接，所述存储电容的第二端与所述驱动晶体管的所述栅极连接。通过所述第一重置晶体管及所述第一电压端重置所述驱动晶体管的栅极电压，通过所述第一重置晶体管及所述第二电压端将所述驱动晶体管的阈值电压传输至所述驱动晶体管的栅极，从而在所述驱动晶体管驱动所述发光器件发光时，降低所述驱动晶体管的阈值电压对所述驱动晶体管驱动电流的影响，保证所述发光器件发光的稳定性。\n\n附图说明\n\n[0018]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1A～图1D是本申请实施例提供的像素驱动电路的结构示意图；\n\n[0020]图2A是图1A和图1D所示的像素驱动电路的工作时序图；\n\n[0021]图2B是图1B所示的像素驱动电路的工作时序图；\n\n[0022]图2C是图1C所示的像素驱动电路的工作时序图；\n\n[0023]图3A～图3C是本申请实施例提供的显示面板的结构示意图；\n\n[0024]图4A～图4D是本申请的实施例提供的像素驱动电路的结构示意图。\n\n具体实施方式\n\n[0025]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0026]如图1A～图1D是本申请实施例提供的像素驱动电路的结构示意图；本申请的实施例提供一种像素驱动电路，所述像素驱动电路包括发光器件D1、驱动晶体管Td。\n\n[0027]可选地，所述发光器件D1包括有机发光二极管、次毫米发光二极管或微型发光二极管。\n\n[0028]进一步地，所述有机发光二极管包括倒置型有机发光二极管，所述倒置型有机发光二极管串联于第一电压端OVDD与所述驱动晶体管Td的漏极之间，如图1A～图1B和图1D所示。\n\n[0029]进一步地，所述有机发光二极管包括正型有机发光二极管，所述正型有机发光二极管串联于第二电压端OVSS与所述驱动晶体管Td的源极之间，如图1C所示。\n\n[0030]所述驱动晶体管Td与所述发光器件D1串联在第一电压端OVDD与第二电压端OVSS之间，所述驱动晶体管Td用于根据相应的数据信号Vdata产生驱动所述发光器件D1发光的驱动电流I。具体地，所述驱动晶体管Td连接于所述发光器件D1的阴极与所述第二电压端OVSS之间，如图1A～图1B和图1D所示；或所述驱动晶体管Td连接于所述发光器件D1的阳极与所述第一电压端OVDD之间，如图1C所示。\n\n[0031]可选地，所述驱动晶体管Td包括场效应晶体管；进一步地，所述场效应晶体管包括薄膜晶体管。可选地，所述驱动晶体管Td包括无机半导体层或有机半导体层。进一步地，所述无机半导体层包括非晶硅半导体、多晶硅半导体、氧化物半导体等材料。\n\n[0032]请继续参阅图1A～图1D，所述像素驱动电路还包括第一重置晶体管Ts1、第二重置晶体管Ts2、存储电容Cs1及数据晶体管Tda。\n\n[0033]所述第一重置晶体管Ts1连接于所述驱动晶体管Td的栅极与所述驱动晶体管Td的源极或漏极中的一者之间，以用于通过所述第一电压端OVDD使所述驱动晶体管Td的栅极电压大于所述第二电压端OVSS的电压值，并用于通过所述第二电压端OVSS将所述驱动晶体管Td的阈值电压Vth传输至所述驱动晶体管Td的栅极。所述第二重置晶体管Ts2连接于所述存储电容Cs1的第一端与重置电压端VIL之间。具体地，所述第一重置晶体管Ts1的栅极、所述第二重置晶体管Ts2的栅极均与重置控制信号线STL连接，所述第一重置晶体管Ts1的所述源极或所述漏极中的一者与所述驱动晶体管Td的源极或漏极中的一者连接，所述第一重置晶体管Ts1的所述源极或所述漏极中的另一者与所述驱动晶体管Td的栅极连接。所述第二重置晶体管Ts2的源极或漏极中的一者与所述存储电容Cs1的所述第一端连接，所述第二重置晶体管Ts2的所述源极或所述漏极中的另一者与重置电压端VIL连接。\n\n[0034]所述存储电容Cs1的第二端与所述驱动晶体管Td的栅极、所述第一重置晶体管Ts1的源极或漏极中的一者连接，所述第一重置晶体管Ts1及所述第二重置晶体管Ts2用于根据所述重置控制信号ST将重置电压信号VI和所述第一电压端OVDD载入的第一电压信号VDD传输至所述存储电容Cs1的两端，以用于重置所述存储电容Cs1的两端电压，从而重置所述驱动晶体管Td的栅极电压。其中，所述第一电压端OVDD载入的第一电压信号VDD的电压值大于所述第二电压端OVSS载入的第二电压信号的电压值。\n\n[0035]所述数据晶体管Tda连接于数据电压端DL与所述存储电容Cs1的所述第一端之间，以用于根据数据写入控制信号WR将数据电压端DL载入的数据信号Vdata通过所述存储电容Cs1耦合至所述驱动晶体管Td的栅极，使所述驱动晶体管Td可根据所述数据信号Vdata产生不同的驱动电流，从而使所述发光器件D1的具有不同的发光强度。\n\n[0036]其中，所述存储电容Cs1通过所述数据晶体管Tda与数据电压端DL电性连接。具体地，所述数据晶体管Tda的栅极与数据写入控制信号线WRL连接，所述数据晶体管Tda的源极或漏极中的一者与所述第二重置晶体管Ts2的所述源极或所述漏极中与所述存储电容Cs1连接的一者连接，所述数据晶体管Tda的所述源极或所述漏极中的另一者与所述数据电压端DL连接。\n\n[0037]可选地，所述第一重置晶体管Ts1、所述第二重置晶体管Ts2、所述数据晶体管Tda包括场效应晶体管。可选地，所述第一重置晶体管Ts1、所述第二重置晶体管Ts2、所述数据晶体管Tda包括无机半导体层或有机半导体层。\n\n[0038]进一步地，请继续参阅图1A及图1C～图1D，为避免所述像素驱动电路在实现重置所述驱动晶体管Td的栅极电压的工作状态，和，向所述驱动晶体管Td的所述栅极传输所述阈值电压Vth的工作状态之间出现干扰，所述像素驱动电路还包括发光控制模块，所述发光控制模块用于根据发光控制信号EM使所述驱动晶体管Td产生所述驱动电流I，以驱动所述发光器件D1发光；并根据所述发光控制信号EM实现所述第一重置晶体管Ts1与所述第一电压端OVDD的电性连接，以重置所述驱动晶体管Td的栅极电压，或根据所述发光控制信号EM断开所述第一重置晶体管Ts1与所述第一电压端OVDD的电性连接，以通过所述第一重置晶体管Ts1及所述第二电压端OVSS将所述阈值电压Vth传输至所述驱动晶体管Td的栅极。\n\n[0039]具体地，所述发光控制模块包括第一开关晶体管Ts11，所述第一开关晶体管Ts11连接于所述发光器件D1与所述驱动晶体管Td的所述源极或所述漏极中的一者之间。\n\n[0040]进一步地，在所述发光器件D1的阳极与所述第一电压端OVDD连接时，所述第一开关晶体管Ts11连接于所述发光器件D1的阴极与所述驱动晶体管Td的所述源极或所述漏极中的一者、所述第一重置晶体管Ts1的所述源极或所述漏极中的一者之间，如图1A～图1B和图1D所示。具体地，所述第一开关晶体管Ts11的栅极与发光控制信号线EML连接，所述第一开关晶体管Ts11的源极或漏极中的一者与所述驱动晶体管Td的所述源极或所述漏极中的一者、所述第一重置晶体管Ts1的所述源极或所述漏极中的一者连接，所述第一开关晶体管Ts11的所述源极或所述漏极中的另一者与所述发光器件D1阴极连接。\n\n[0041]进一步地，在所述发光器件D1的阴极与所述第二电压端OVSS连接时，所述发光控制模块还包括第二开关晶体管Ts12，所述第二开关晶体管Ts12连接于所述驱动晶体管Td的所述源极或所述漏极中的另一者与所述第一电压端OVDD之间，此时所述第一开关晶体管Ts11连接于所述发光器件D1的阳极与所述驱动晶体管Td的所述源极或所述漏极中的一者之间，如图1C所示。具体地，所述第一开关晶体管Ts11的栅极和所述第二开关晶体管Ts12的栅极均与所述发光控制信号线EML连接，所述第一开关晶体管Ts11的源极或漏极中的一者与所述驱动晶体管Td的所述源极或所述漏极中的一者连接，所述第一开关晶体管Ts11的所述源极或所述漏极中的另一者与所述发光器件D1的阳极连接；所述第二开关晶体管Ts12的源极或漏极中的一者与所述驱动晶体管Td的所述源极或所述漏极中的另一者、所述第一重置晶体管Ts1的所述源极或所述漏极中的一者连接，所述第二开关晶体管Ts12的所述源极或所述漏极中的另一者与所述第一电压端OVDD连接。\n\n[0042]进一步地，如图1B～图1C所示，为使重置所述驱动晶体管Td的栅极电压，或将所述驱动晶体管Td的所述阈值电压Vth传输至所述驱动晶体管Td的所述栅极时，所述发光器件D1不发光，所述像素驱动电路还可包括选路晶体管Ts3。所述选路晶体管Ts3与所述发光器件D1和所述第一开关晶体管Ts11并联，以使所述发光器件D1所在的支路可在重置所述驱动晶体管Td的栅极电压，或将所述驱动晶体管Td的所述阈值电压Vth传输至所述驱动晶体管Td的栅极时被短路，从而使所述像素驱动电路可根据选路控制信号ST1通过所述选路晶体管Ts3配合所述第一重置晶体管Ts1重置所述驱动晶体管Td的栅极电压，或根据选路控制信号ST1通过所述选路晶体管Ts3使所述驱动晶体管Td的阈值电压传输至所述驱动晶体管Td的栅极。\n\n[0043]具体地，请参阅图1B，在所述发光器件D1的阳极与所述第一电压端OVDD连接时，所述选路晶体管Ts3的栅极与选路控制信号线STL1连接，所述选路晶体管Ts3的源极或漏极中的一者与所述发光器件D1的阳极、所述第一电压端OVDD连接，所述选路晶体管Ts3的所述源极或所述漏极中的另一者与所述第一开关晶体管Ts11的源极或漏极中的一者、所述驱动晶体管Td的源极或漏极中的一者、所述第一重置晶体管Ts1的源极或漏极中的一者连接。请参阅图1C，在所述发光器件D1的阴极与所述第二电压端OVSS连接时，所述选路晶体管Ts3的源极或漏极中的一者与所述发光器件D1的阴极、所述第二电压端OVSS连接，所述选路晶体管Ts3的所述源极或所述漏极中的另一者与所述第一开关晶体管Ts11的源极或漏极中的一者、所述驱动晶体管Td的源极或漏极中的一者连接。\n\n[0044]其中，在图1A和图1D所示的像素驱动电路中，所述发光控制模块不仅可以实现对所述发光器件D1发光时刻的控制，还可以配合所述第一电压端OVDD、所述第二电压端OVSS及所述第一重置晶体管Ts1实现对所述驱动晶体管Td的栅极电压的重置及阈值电压的传输，使得所述发光控制模块复合多种功能，有利于降低所述像素驱动电路所用器件的数量，从而有利于降低生产成本及生产难度。\n\n[0045]可选地，所述第一开关晶体管Ts11、所述第二开关晶体管Ts12、所述选路晶体管Ts3包括场效应晶体管。可选地，所述第一开关晶体管Ts11、所述第二开关晶体管Ts12、所述选路晶体管Ts3包括无机半导体层或有机半导体层。\n\n[0046]可选地，所述驱动晶体管Td、所述第一重置晶体管Ts1、所述第二重置晶体管Ts2、所述第一开关晶体管Ts11、所述第二开关晶体管Ts12、所述选路晶体管Ts3、所述数据晶体管Tda包括N型晶体管或P型晶体管。\n\n[0047]可选地，一所述像素驱动电路可同时驱动多个所述发光器件D1发光，如图1D所示。此外，还可得到与图1B～图1C对应的所述像素驱动电路中，一所述像素驱动电路同时驱动多个所述发光器件D1发光的方案，在此不再进行赘述。\n\n[0048]本申请还提供一种像素驱动电路的驱动方法，用于驱动上述的像素驱动电路。具体地，所述像素驱动电路的驱动方法包括重置阶段、侦测阶段及发光阶段。\n\n[0049]在所述重置阶段，利用所述第一重置晶体管、所述第一电压端重置所述驱动晶体管的栅极电压。其中，所述第一电压端OVDD载入的所述第一电压信号VDD可通过所述发光器件D1、所述第一开关晶体管Ts11传输至所述第一重置晶体管Ts1的源极或漏极中的一者；或通过所述选路晶体管Ts3传输至所述第一重置晶体管Ts1的源极或漏极中的一者；或通过所述第二开关晶体管Ts12传输至所述第一重置晶体管Ts1的源极或漏极中的一者。\n\n[0050]在所述侦测阶段，利用所述第一重置晶体管Ts1及所述第二电压端OVSS将所述阈值电压Vth传输至所述驱动晶体管Td的所述栅极。其中，所述驱动晶体管Td的源极或漏极中的一者可直接与所述第二电压端OVSS电性连接，或通过所述选路晶体管Ts3与所述第二电压端OVSS实现电性连接。\n\n[0051]在所述发光阶段，所述驱动晶体管Td产生所述驱动电流I驱动所述发光器件D1发光。\n\n[0052]进一步地，在所述发光阶段之前，所述像素驱动电路的驱动方法还包括数据写入阶段。在所述数据写入阶段，利用所述数据晶体管Tda将所述数据信号Vdata通过所述存储电容Cs1耦合至所述驱动晶体管Td的栅极，以使所述驱动晶体管Td在所述发光阶段根据所述数据信号Vdata为所述发光器件D1提供相应的驱动电流I。\n\n[0053]进一步地，在所述侦测阶段与所述数据写入阶段之间还包括第一维持阶段，在所述数据写入阶段及所述发光阶段之间还包括第二维持阶段，在所述第一维持阶段，所述驱动晶体管Td的栅极电压与在所述重置阶段时的栅极电压保持一致。在所述第二维持阶段，所述驱动晶体管Td的栅极电压与在所述数据写入阶段时的栅极电压保持一致。\n\n[0054]下面以所述驱动晶体管Td、所述第一重置晶体管Ts1、所述第二重置晶体管Ts2、所述第一开关晶体管Ts11、所述第二开关晶体管Ts12、所述选路晶体管Ts3及所述数据晶体管Tda均为N型晶体管，所述驱动晶体管Td的源极与所述第二电压端OVSS电性连接，所述驱动晶体管Td的漏极与所述第一电压端OVDD电性连接为例，结合所述像素驱动电路的驱动方法对如图1A～图1D所示的所述像素驱动电路的工作原理进行说明。\n\n[0055]具体地，如图2A是图1A和图1D所示的像素驱动电路的工作时序图。请继续参阅图1A、图1D及图2A。\n\n[0056]在所述重置阶段S1：所述发光控制信号线EML载入的所述发光控制信号EM为高电平，所述重置控制信号线STL载入的所述重置控制信号ST为高电平；所述第一重置晶体管Ts1、所述第二重置晶体管Ts2响应所述重置控制信号ST导通，所述第一开关晶体管Ts11响应所述发光控制信号EM导通；所述重置电压信号VI经所述第二重置晶体管Ts2对第一节点M处的电位重置，所述第一电压信号VDD经所述第一开关晶体管Ts11及所述第一重置晶体管Ts1对第二节点G处的电位重置，从而使所述驱动晶体管Td的栅极电压被重置。而所述第一重置晶体管Ts1导通使得所述驱动晶体管Td呈二极管式连接，所述驱动晶体管Td导通，所述发光器件D1因所述驱动晶体管Td、所述第一开关晶体管Ts11的导通而发光。其中，所述第一节点M及所述第二节点G分别对应所述存储电容Cs1的两端。\n\n[0057]在所述侦测阶段S2：所述发光控制信号线EML载入的所述发光控制信号EM为低电平，所述重置控制信号线STL载入的所述重置控制信号ST为高电平；所述第一重置晶体管Ts1及所述第二重置晶体管Ts2保持导通，所述第一开关晶体管Ts11截止；所述第一重置晶体管Ts1导通使得所述驱动晶体管Td仍呈二极管式连接，所述驱动晶体管Td的栅极电压通过所述驱动晶体管Td向所述第二电压端OVSS释放，直至所述驱动晶体管Td的所述栅极电压等于所述驱动晶体管Td的阈值电压Vth，所述驱动晶体管Td关断，使得所述阈值电压Vth被传输至所述驱动晶体管Td的所述栅极(即所述第二节点G处)。\n\n[0058]在所述第一维持阶段S3：所述发光控制信号EM、所述重置控制信号ST及所述数据写入控制信号WR均为低电平，所述驱动晶体管Td、所述第一重置晶体管Ts1、所述第二重置晶体管Ts2、所述第一开关晶体管Ts11及所述数据晶体管Tda均关断，所述驱动晶体管Td栅极电压保持为所述阈值电压Vth。\n\n[0059]在所述数据写入阶段S4：所述数据写入控制信号线WRL所载入的所述数据写入控制信号WR为高电平，所述数据晶体管Tda响应所述数据写入控制信号WR导通，所述数据信号Vdata被传输至所述第一节点M处，所述第一节点M处的电位由VI变为Vdata，变化量为Vdata-VI。相应地，由于所述存储电容Cs1的存在，所述第二节点G处的电位亦具有所述变化量Vdata-VI，因此，所述驱动晶体管Td的栅极电压由Vth变为Vdata-VI+Vth。\n\n[0060]在所述第二维持阶段S5：所述发光控制信号EM、所述重置控制信号ST及所述数据写入控制信号WR均为低电平，所述驱动晶体管Td、所述第一重置晶体管Ts1、所述第二重置晶体管Ts2、所述第一开关晶体管Ts11及所述数据晶体管Tda均关断，所述驱动晶体管Td的栅极电压保持为Vdata-VI+Vth。\n\n[0061]在所述发光阶段S6：所述发光控制信号EM为高电平，所述第一开关晶体管Ts11导通，所述驱动晶体管Td的栅极电压小于所述第一电压信号VDD，所述驱动晶体管Td工作在饱和区，所述驱动晶体管Td产生驱动所述发光器件D1发光的驱动电流I。\n\n[0062]其中，由于所述驱动晶体管Td的源极与所述第二电压端OVSS直接连接，所以，所述驱动晶体管Td的栅源电压Vgs＝Vg＝Vdata-VI+Vth。根据Vgs＝Vdata-VI+Vth和I＝(CoxμmW/L)*(Vgs-Vth)2/2(其中，Cox、μm、W、L分别为晶体管的单位面积沟道电容、沟道迁移率、沟道宽和沟道长)可得；I＝(CoxμmW/L)*(Vdata-VI+Vth-Vth)2/2＝(CoxμmW/L)*(Vdata-VI)2/2；以此降低所述阈值电压Vth对所述驱动电流I的影响，保证所述发光器件D1发光的稳定性。\n\n[0063]可选地，所述重置阶段S1可作为所述像素驱动电路开始工作时的第一个工作阶段，也可作为所述像素驱动电路即将结束工作时的最后一个工作阶段，以在所述像素驱动电路的一个工作周期内，标志所述发光器件发光状态的结束。\n\n[0064]可选地，在所述像素驱动电路的一个工作周期内，所述重置阶段S1所占的时长小于所述发光阶段S6所占据的时长，以在所述重置阶段S1及所述侦测阶段S2使所述发光器件D1发光强度随所述驱动晶体管Td的栅极电压在极短的时间内实现由亮至暗的变动，完成所述发光器件D1的熄灭。\n\n[0065]具体地，如图2B是图1B所示的像素驱动电路的工作时序图。请继续参阅图1B及图2B。\n\n[0066]在所述重置阶段S1：所述发光控制信号EM为低电平，所述重置控制信号ST为高电平，所述选路控制信号线STL1载入的所述选路控制信号ST1为高电平；所述第一重置晶体管Ts1、所述第二重置晶体管Ts2响应所述重置控制信号ST导通，所述选路晶体管Ts3响应所述选路控制信号ST1导通；所述重置电压信号VI经所述第二重置晶体管Ts2重置第一节点M处的电位，所述第一电压信号VDD经所述选路晶体管Ts3及所述第一重置晶体管Ts1重置第二节点G处的电位，从而使所述驱动晶体管Td的栅极电压被重置。\n\n[0067]在所述侦测阶段S2：所述发光控制信号EM为低电平，所述重置控制信号ST为高电平，所述选路控制信号ST1为低电平；所述第一重置晶体管Ts1及所述第二重置晶体管Ts2保持导通，所述第一开关晶体管Ts11、所述选路晶体管Ts3截止；所述第一重置晶体管Ts1导通使得所述驱动晶体管Td仍呈二极管式连接，所述驱动晶体管Td的栅极电压通过所述驱动晶体管Td向所述第二电压端OVSS释放，直至所述驱动晶体管Td的所述栅极电压等于所述驱动晶体管Td的阈值电压Vth，所述驱动晶体管Td关断，使得所述阈值电压Vth被传输至所述驱动晶体管Td的所述栅极(即所述第二节点G处)。\n\n[0068]在所述第一维持阶段S3：所述发光控制信号EM、所述重置控制信号ST及所述数据写入控制信号WR均为低电平，所述驱动晶体管Td、所述第一重置晶体管Ts1、所述第二重置晶体管Ts2、所述第一开关晶体管Ts11及所述数据晶体管Tda均关断，所述驱动晶体管Td栅极电压保持为所述阈值电压Vth。\n\n[0069]在所述数据写入阶段S4：所述数据写入控制信号线WRL所载入的所述数据写入控制信号WR为高电平，所述数据晶体管Tda响应所述数据写入控制信号WR导通，所述数据信号Vdata被传输至所述第一节点M处，所述第一节点M处的电位由VI变为Vdata，变化量为Vdata-VI。相应地，由于所述存储电容Cs1的存在，所述第二节点G处的电位亦具有所述变化量Vdata-VI，因此，所述驱动晶体管Td的栅极电压由Vth变为Vdata-VI+Vth。\n\n[0070]在所述第二维持阶段S5：所述发光控制信号EM、所述重置控制信号ST及所述数据写入控制信号WR均为低电平，所述驱动晶体管Td、所述第一重置晶体管Ts1、所述第二重置晶体管Ts2、所述第一开关晶体管Ts11及所述数据晶体管Tda均关断，所述驱动晶体管Td的栅极电压保持为Vdata-VI+Vth。\n\n[0071]在所述发光阶段S6：所述发光控制信号EM为高电平，所述第一开关晶体管Ts11导通，所述驱动晶体管Td的栅极电压小于所述第一电压信号VDD，所述驱动晶体管Td工作在饱和区，所述驱动晶体管Td产生驱动所述发光器件D1发光的驱动电流I。\n\n[0072]其中，所述驱动晶体管Td的源极与所述第二电压端OVSS直接连接，所述驱动晶体管Td的栅源电压Vgs＝Vg＝Vdata-VI+Vth。由Vgs＝Vdata-VI+Vth和I＝(CoxμmW/L)*(Vgs-Vth)2/2可得；I＝(CoxμmW/L)*(Vdata-VI)2/2；以此降低所述阈值电压Vth对所述驱动电流I的影响，保证所述发光器件D1发光的稳定性。\n\n[0073]具体地，如图2C是图1C所示的像素驱动电路的工作时序图。请继续参阅图1C及图2C。\n\n[0074]在所述重置阶段S1：所述发光控制信号EM为高电平，所述重置控制信号ST为高电平，所述选路控制信号ST1为低电平；所述第一重置晶体管Ts1、所述第二重置晶体管Ts2响应所述重置控制信号ST导通，所述第一开关晶体管Ts11、所述第二开关晶体管Ts12响应所述发光控制信号EM导通，所述选路晶体管Ts3截止；所述重置电压信号VI经所述第二重置晶体管Ts2重置第一节点M处的电位，所述第一电压信号VDD经所述第二开关晶体管Ts12及所述第一重置晶体管Ts1重置第二节点G处的电位，从而使所述驱动晶体管Td的栅极电压被重置。\n\n[0075]在所述侦测阶段S2：所述发光控制信号EM为低电平，所述重置控制信号ST为高电平，所述选路控制信号ST1为高电平；所述第一重置晶体管Ts1及所述第二重置晶体管Ts2保持导通，所述第一开关晶体管Ts11、所述第二开关晶体管Ts12截止，所述选路晶体管Ts3导通，所述驱动晶体管Td的源极通过所述选路晶体管Ts3与所述第二电压端OVSS电性连接，所述驱动晶体管Td的源极电压为Vs；所述第一重置晶体管Ts1导通使得所述驱动晶体管Td仍呈二极管式连接，所述驱动晶体管Td的栅极电压通过所述驱动晶体管Td及所述选路晶体管Ts3向所述第二电压端OVSS释放，直至所述驱动晶体管Td的栅源电压Vgs为阈值电压Vth(即所述驱动晶体管Td的栅极电压Vg＝Vgs+Vs＝Vth+Vs)，所述驱动晶体管Td关断，使得所述阈值电压Vth被传输至所述驱动晶体管Td的所述栅极。\n\n[0076]在所述第一维持阶段S3：所述发光控制信号EM、所述重置控制信号ST及所述数据写入控制信号WR均为低电平，所述驱动晶体管Td、所述第一重置晶体管Ts1、所述第二重置晶体管Ts2、所述第一开关晶体管Ts11、所述第二开关晶体管Ts12及所述数据晶体管Tda均关断，所述驱动晶体管Td的栅极电压维持所述侦测阶段S2时的电压值。\n\n[0077]在所述数据写入阶段S4：所述选路控制信号ST1为高电平，所述数据写入控制信号线WRL所载入的所述数据写入控制信号WR为高电平，所述数据晶体管Tda响应所述数据写入控制信号WR导通，所述选路晶体管Ts3导通，所述驱动晶体管Td的源极通过所述选路晶体管Ts3与所述第二电压端OVSS电性连接；所述数据信号Vdata被传输至所述第一节点M处，所述第一节点M处的电位由VI变为Vdata，变化量为Vdata-VI。相应地，由于所述存储电容Cs1的存在，所述第二节点G处的电位亦具有所述变化量Vdata-VI，因此，所述驱动晶体管Td的栅极电压Vg由Vth+Vs变为Vdata-VI+Vth+Vs。\n\n[0078]在所述第二维持阶段S5：所述发光控制信号EM、所述重置控制信号ST及所述数据写入控制信号WR均为低电平，所述驱动晶体管Td、所述第一重置晶体管Ts1、所述第二重置晶体管Ts2、所述第一开关晶体管Ts11、所述第二开关晶体管Ts12及所述数据晶体管Tda均关断，所述驱动晶体管Td的栅极电压维持所述数据写入阶段S4时的电压值。\n\n[0079]在所述发光阶段S6：所述发光控制信号EM为高电平，所述第一开关晶体管Ts11导通，所述驱动晶体管Td的栅极电压小于所述第一电压信号VDD，所述驱动晶体管Td工作在饱和区，所述驱动晶体管Td产生驱动所述发光器件D1发光的驱动电流I。\n\n[0080]其中，由于Vgs＝Vg-Vs＝Vdata-VI+Vth+Vs-Vs，因此，Vgs＝Vdata-VI+Vth。则由I＝(CoxμmW/L)*(Vgs-Vth)2/2可得所述像素驱动电路在所述发光阶段S6产生的所述驱动电流I＝(CoxμmW/L)*(Vdata-VI)2/2；以此降低所述阈值电压Vth对所述驱动电流I的影响，保证所述发光器件D1发光的稳定性。\n\n[0081]如图3A～图3C是本申请实施例提供的显示面板的结构示意图，如图4A～图4D是本申请的实施例提供的像素驱动电路的结构示意图。其中，图3C是图3B所示的显示面板沿A-A剖切的剖视图。\n\n[0082]本申请的实施例还提供一种显示面板，所述显示面板包括多个发光器件D1及与像素驱动电路，所述像素驱动电路与对应的所述发光器件D1连接。\n\n[0083]可选地，每一所述发光器件D1的阳极与第一电压端OVDD连接，以使多个所述发光器件D1采用共阳极接法，如图4A～图4B及图4D所示；或每一所述发光器件D1的阴极与第二电压端OVSS连接，以使多个所述发光器件D1采用共阴极接法，如图4C所示。\n\n[0084]所述像素驱动电路包括：第一晶体管T1、第二晶体管T2、第三晶体管T3及第一电容C1。\n\n[0085]所述第一晶体管T1的源极或漏极中的一者与对应的所述发光器件D1电性连接，所述第一晶体管T1的所述源极或所述漏极中的另一者与所述第一电压端OVDD或所述第二电压端OVSS连接。具体地，请参阅图4A～图4B及图4D，在每一所述发光器件D1的阳极与所述第一电压端OVDD连接时，所述第一晶体管T1的源极或漏极中的一者与对应的所述发光器件D1的阴极电性连接，所述第一晶体管T1的所述源极或所述漏极中的另一者与所述第二电压端OVSS电性连接。或请参阅图4C，在每一所述发光器件D1的阴极与所述第二电压端OVSS连接时，所述第一晶体管T1的源极或漏极中的一者与对应的所述发光器件D1的阳极电性连接，所述第一晶体管T1的所述源极或所述漏极中的另一者与所述第一电压端OVDD电性连接。\n\n[0086]所述第二晶体管T2的栅极与重置控制信号线STL连接，所述第二晶体管T2的源极或漏极中的一者与所述第一晶体管T1的栅极连接，所述第二晶体管T2的所述源极或所述漏极中的另一者与所述第一晶体管T1的所述源极或所述漏极中的一者连接，如图4A～图4D所示。\n\n[0087]所述第三晶体管T3的栅极与所述重置控制信号线STL连接，所述第三晶体管T3的源极或漏极中的一者与重置电压端VI连接；所述第一电容C1串联于所述第三晶体管T3的所述源极或所述漏极中的另一者与所述第一晶体管T1的所述栅极、所述第二晶体管T2的所述源极或所述漏极中的一者之间，如图4A～图4D所示。\n\n[0088]其中，通过所述第二晶体管T2、所述第三晶体管T3及所述第一电容C1重置所述第一晶体管T1的栅极电压，通过所述第二晶体管T2及所述第二电压端OVSS将所述第一晶体管T1的阈值电压传输至所述第一晶体管T1的所述栅极，以降低所述第一晶体管T1阈值电压对驱动所述发光器件D1发光的驱动电流的影响，保证所述发光器件D1发光的稳定性。\n\n[0089]进一步地，请继续参阅图4A～图4D，所述像素驱动电路还包括：第四晶体管T4，所述第四晶体管T4的栅极与发光控制信号线EML连接，所述第四晶体管T4的源极或漏极中的一者与对应的所述发光器件D1的连接，所述第四晶体管T4的所述源极或所述漏极中的另一者与所述第一晶体管T1的所述源极或所述漏极中的一者连接。具体地，请参阅图4A～图4B及图4D，在每一所述发光器件D1的阳极与所述第一电压端OVDD连接时，所述第四晶体管T4的栅极与发光控制信号线EML连接，所述第四晶体管T4的源极或漏极中的一者与对应的所述发光器件D1的阴极连接，所述第四晶体管T4的所述源极或所述漏极中的另一者与所述第一晶体管T1的所述源极或所述漏极中的一者、所述第二晶体管T2的所述源极或所述漏极中的一者连接。或请参阅图4C，在每一所述发光器件D1的阴极与所述第二电压端OVSS连接时，所述第四晶体管T4的栅极与发光控制信号线EML连接，所述第四晶体管T4的源极或漏极中的一者与对应的所述发光器件D1的阳极连接，所述第四晶体管T4的所述源极或所述漏极中的另一者与所述第一晶体管T1的所述源极或所述漏极中的一者连接。\n\n[0090]进一步地，请继续参阅图4A～图4D，所述像素驱动电路还包括：第五晶体管T5。所述第五晶体管T5的栅极与数据写入控制信号线WRL连接，所述第五晶体管T5的源极或漏极中的一者与数据电压端DL连接，所述第五晶体管T5的所述源极或所述漏极中的另一者与所述第三晶体管T3的所述源极或所述漏极中与所述第一电容C1连接的一者连接。\n\n[0091]进一步地，请继续参阅图4B～图4C，所述像素驱动电路还包括：第六晶体管T6，所述第六晶体管T6的栅极与选路控制信号线STL1连接，所述第六晶体管T6的源极或漏极中的一者与对应的所述发光器件D1连接，所述第六晶体管T6的所述源极或所述漏极中的另一者与所述第一晶体管T1的所述源极或所述漏极中的一者、所述第四晶体管T4的所述源极或所述漏极中的一者连接。具体地，请参阅图4B，在每一所述发光器件D1的阳极与所述第一电压端OVDD连接时，所述第六晶体管T6的栅极与选路控制信号线STL1连接，所述第六晶体管T6的源极或漏极中的一者与对应的所述发光器件D1的阳极连接，所述第六晶体管T6的所述源极或所述漏极中的另一者与所述第一晶体管T1的所述源极或所述漏极中的一者、所述第二晶体管T2的所述源极或所述漏极中的一者、所述第四晶体管T4的所述源极或所述漏极中的一者连接。具体地，请参阅图4C，在每一所述发光器件D1的阴极与所述第二电压端OVSS连接时，所述第六晶体管T6的栅极与选路控制信号线STL1连接，所述第六晶体管T6的源极或漏极中的一者与对应的所述发光器件D1的阴极连接，所述第六晶体管T6的所述源极或所述漏极中的另一者与所述第一晶体管T1的所述源极或所述漏极中的一者、所述第四晶体管T4的所述源极或所述漏极中的一者连接。\n\n[0092]进一步地，请继续参阅图4C，所述像素驱动电路还包括：第七晶体管T7，所述第七晶体管T7的栅极与所述发光控制信号线EML连接，所述第七晶体管T7的源极或漏极中的一者与第一电压端OVDD连接，所述第七晶体管T7的所述源极或所述漏极中的另一者与所述第一晶体管T1的所述源极或所述漏极中的一者、所述第二晶体管T2的所述源极或所述漏极中的一者连接。\n\n[0093]可选地，所述显示面板包括自发光显示面板、被动式发光显示面板、量子点显示面板等。\n\n[0094]进一步地，所述被动式发光显示面板包括液晶显示面板，所述液晶显示面板包括背光源，所述背光源包括所述发光器件D1。\n\n[0095]进一步地，所述自发光显示面板包括所述发光器件D1。可选地，所述发光器件D1包括有机发光二极管、次毫米发光二极管及微型发光二极管。\n\n[0096]请继续参阅图3A及图4A～图4C，所述显示面板包括非显示透光区100a及显示区100b。其中，所述显示面板在所述非显示透光区100a可满足光透光率要求。多个所述发光器件D1与对应的所述像素驱动电路均位于所述显示区100b内，以使所述像素驱动电路驱动对应的所述发光器件发光，使所述显示面板在所述显示区100b实现显示功能。\n\n[0097]请继续参阅图3B和图4A～图4D，所述显示面板包括显示透光区100c及位于所述显示透光区100c外围的主显示区100d。其中，所述显示面板在所述显示透光区100c可兼顾透光率要求及显示要求。在所述主显示区100d内，每一所述像素驱动电路驱动一所述发光器件D1发光。在所述显示透光区100c内，每一所述像素驱动电路可同时驱动多个所述发光器件D1发光，有利于提高所述显示透光区100c的透光率。\n\n[0098]进一步地，所述显示面板还包括传感器，所述传感器正对所述显示透光区100c设置。更进一步地，所述传感器包括光传感器、指纹传感器、摄像头等。\n\n[0099]请继续参阅图3B和图4A～图4D，所述显示面板还包括位于所述主显示区100d与所述显示透光区100c之间的过渡显示区100e，所述过渡显示区100e包括多个所述发光器件D1。驱动位于所述显示透光区100c及所述过渡显示区100e内的所述发光器件D1发光的所述像素驱动电路位于所述过渡显示区100e内，驱动位于所述主显示区100d内的所述发光器件D1发光的所述像素驱动电路对应的位于所述主显示区100d内。\n\n[0100]请继续参阅图3C，所述显示面板包括衬底301，所述发光器件D1及所述像素驱动电路位于所述衬底301上。\n\n[0101]所述显示面板还包括位于所述衬底301上的有源层3021、第一电极层、第二电极层、第三电极层、绝缘层303、平坦层304及像素定义层305。其中，所述第一电极层包括与所述有源层3021对应的栅极3022，所述第二电极层包括与所述有源层3021电性连接的源极及漏极3023，所述第三电极层包括与所述栅极3022对应的电极部3024。所述栅极3022与所述电极部3024形成所述第一电容C1。\n\n[0102]每一所述像素驱动电路的所述第一晶体管T1、所述第二晶体管T2、所述第三晶体管T3、所述第四晶体管T4及所述第五晶体管T5均包括有源层3021、栅极3022、源极及漏极3023。\n\n[0103]每一所述发光器件D1包括阳极3061、阴极3063及位于所述阳极3061与阴极3063之间的发光层3062。可选地，所述发光层3062包括荧光材料、量子点材料、荧光材料等。可选地，所述阳极3061还可位于所述发光层3062远离所述衬底301的一侧，所述阴极3063位于所述发光层3062靠近所述衬底301的一侧。\n\n[0104]可选地，所述显示面板还包括封装层、触控电极、色转换层等未示出部分。\n\n[0105]本申请的实施例还提供一种显示装置，所述显示装置包括上述的任一像素驱动电路或上述的任一显示面板。\n\n[0106]本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10910, 23964, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及显示器件的制造，具体涉及像素电路及其驱动方法、显示面板和显示装置。\n\n背景技术\n\n[0002]OLED(Organic Light Emitting Diode，有机发光二极管)显示器件具备重量轻、厚度薄、可弯曲、视角范围大等优点。\n\n[0003]目前，OLED显示器的像素电路中采用薄膜晶体管控制通过OLED的电流以控制OLED的发光情况，但是，该薄膜晶体管在工作时栅极被唯一且固定的信号源加载为正信号，导致该薄膜晶体管的栅极信号和源极信号的差值长期保持为正信号，以至于该薄膜晶体管的阈值电压漂移呈单一变化，进一步加快了该薄膜晶体管的阈值电压的漂移，严重影响了显示面板显示的均匀性，并且降低了显示面板的寿命。\n\n[0004]因此，有必要提供可以减缓用于驱动OLED发光的薄膜晶体管的阈值电压的漂移的像素电路及其驱动方法、显示面板和显示装置。\n\n发明内容\n\n[0005]本申请实施例提供像素电路及其驱动方法、显示面板和显示装置，通过将驱动模块的第一控制端在第一时段用于加载第一信号，所述驱动模块的第一控制端在第二时段用于加载第二信号，所述第一信号和所述第二信号极性相反，所述第一时段和所述第二时段无交集；以解决现有的驱动模块的阈值电压单一方向漂移较严重，从而影响了显示面板显示的均匀性，并且降低了显示面板的寿命的问题。\n\n[0006]本申请实施例提供像素电路，所述像素电路包括：\n\n[0007]发光模块；\n\n[0008]驱动模块，所述驱动模块的第一端和所述发光模块电性连接，所述驱动模块的第一控制端在第一时段用于加载第一信号，所述驱动模块的第一控制端在第二时段用于加载第二信号，所述第一信号和所述第二信号极性相反，所述第一时段和所述第二时段无交集。\n\n[0009]在一实施例中，所述像素电路还包括：\n\n[0010]第一信号模块，所述第一信号模块电性连接所述驱动模块的第一控制端，用于使所述驱动模块的第一控制端在所述第一时段加载为所述第一信号，所述第一信号的极性为负；\n\n[0011]第二信号模块，所述第二信号模块电性连接所述驱动模块的第一控制端，用于使所述驱动模块的第一控制端在所述第二时段加载为所述第二信号，所述第二信号的极性为正。\n\n[0012]在一实施例中，所述第一信号模块包括第一信号源和第一开关，所述第一开关在所述第一时段开启以使所述第一信号源向所述驱动模块的第一控制端加载所述第一信号。\n\n[0013]在一实施例中，所述第二信号模块包括第二信号源和第二开关，所述第二开关在所述第二时段开启以使所述第二信号源向所述驱动模块的第一控制端加载所述第二信号。\n\n[0014]在一实施例中，所述驱动模块包括：\n\n[0015]驱动薄膜晶体管，所述驱动薄膜晶体管为双栅薄膜晶体管，所述驱动薄膜晶体管的顶栅配置为所述驱动模块的第一控制端，所述驱动薄膜晶体管的底栅配置为所述驱动模块的第二控制端。\n\n[0016]在一实施例中，所述像素电路还包括：\n\n[0017]补偿模块，所述补偿模块的第一端和所述驱动模块的第二控制端电性连接，所述补偿模块的第二端和所述驱动模块的第一端电性连接，所述补偿模块用于调节所述驱动模块的阈值电压。\n\n[0018]在一实施例中，所述补偿模块包括：\n\n[0019]补偿电容，所述补偿电容的第一端和所述驱动模块的第二控制端电性连接，所述补偿电容的第二端接地，所述补偿电容用于存储所述驱动模块的第二控制端的信号；\n\n[0020]补偿薄膜晶体管，所述补偿薄膜晶体管的栅极电性连接所述第二信号模块，所述补偿薄膜晶体管的源极电性连接所述驱动模块的第一端，所述补偿薄膜晶体管的漏极电性连接所述驱动模块的第二控制端以调节所述驱动模块的阈值电压。\n\n[0021]在一实施例中，所述像素电路还包括：\n\n[0022]数据信号模块；\n\n[0023]写入模块，所述写入模块的输入端和所述数据信号模块电性连接；\n\n[0024]存储模块，所述存储模块的第一端和所述写入模块的输出端、所述驱动模块的第一控制端连接，所述存储模块的第二端和所述驱动模块的第二端电性连接。\n\n[0025]在一实施例中，所述写入模块包括写入开关，所述写入开关的第一端配置为所述写入模块的输入端，所述写入开关的第二端配置为所述写入模块的输出端，所述写入开关的控制端电性连接扫描电压模块，所述扫描电压模块用于控制所述写入开关是否开启，以控制所述数据信号模块是否向所述存储电容写入数据信号；\n\n[0026]所述存储模块包括存储电容，所述存储电容的第一端配置为所述存储模块的第一端，所述储电容的第二端配置为所述存储模块的第二端，所述存储电容用于存储所述数据信号。\n\n[0027]在一实施例中，所述像素电路还包括：\n\n[0028]预存模块，所述预存模块的输入端和所述写入模块的输出端电性连接，所述预存模块的输出端和所述存储模块的第一端电性连接，所述预存模块用于存储所述数据信号模块提供的数据信号。\n\n[0029]在一实施例中，所述预存模块包括：\n\n[0030]预存电容，所述预存电容的第一端配置为所述预存模块的输入端，所述预存电容的第二端接地，所述预存电容用于存储所述数据信号；\n\n[0031]预存开关，所述预存开关的第一端和所述预存电容的第一端电性连接，所述预存开关的第二端配置为所述预存模块的输出端，所述预存开关用于控制所述驱动模块的第一控制端是否加载为所述数据信号。\n\n[0032]在一实施例中，所述发光模块包括微发光二极管。\n\n[0033]本申请实施例还提供显示面板，所述显示面板包括如上文任一项所述的像素电路。\n\n[0034]本申请实施例还提供显示装置，所述显示面板包括所述显示面板。\n\n[0035]本申请实施例还提供驱动方法，所述驱动方法应用于上文任一项所述的像素电路，所述驱动方法包括：\n\n[0036]在所述第二时段向所述驱动模块的第一控制端加载所述第二信号；\n\n[0037]驱动所述驱动模块以控制所述发光模块发光；\n\n[0038]在所述第一时段向所述驱动模块的第一控制端加载所述第一信号。\n\n[0039]本申请提供了像素电路及其驱动方法、显示面板和显示装置，所述像素电路包括发光模块和驱动模块，通过将所述驱动模块的第一端和所述发光模块电性连接，所述驱动模块的第一控制端在第一时段用于加载第一信号，所述驱动模块的第一控制端在第二时段用于加载第二信号，所述第一信号和所述第二信号极性相反，所述第一时段和所述第二时段无交集，以实现所述驱动模块的第一控制端在所述第一时段和所述第二时段交替地被加载为极性相反的所述第一信号和所述第二信号；因此，本方案中将所述驱动模块的第一控制端交替地被设置为极性相反的两种信号，以此减缓所述驱动模块的阈值电压的偏移，以稳定所述发光模块的驱动电流，以提高显示面板显示的均匀性，并且降低了显示面板的寿命。\n\n附图说明\n\n[0040]下面通过附图来对本申请进行进一步说明。需要说明的是，下面描述中的附图仅仅是用于解释说明本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0041]图1为本申请实施例提供的像素电路的结构框图；\n\n[0042]图2为本申请实施例提供的像素电路的电路图；\n\n[0043]图3为本申请实施例提供的驱动薄膜晶体管和补偿薄膜晶体管的连接示意图；\n\n[0044]图4为本申请实施例提供的一种驱动薄膜晶体管的栅极和源极的电压差随时间变化的曲线图；\n\n[0045]图5为本申请实施例提供的另一种驱动薄膜晶体管的栅极和源极的电压差随时间变化的曲线图；\n\n[0046]图6为本申请实施例提供的驱动薄膜晶体管的结构图；\n\n[0047]图7为本申请实施例提供的两种类的N型垂直双栅极结构的晶体管的Vth随Vbs变化的曲线图；\n\n[0048]图8为本申请实施例提供的一种驱动方法的流程图；\n\n[0049]图9为本申请实施例提供的驱动方法的时序图；\n\n[0050]图10为本申请实施例提供的另一种驱动方法的流程图。\n\n具体实施方式\n\n[0051]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整的描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0052]本申请中的术语“第一”、“第二”是用于区别不同对象，而不是用于描述特定顺序。此外，术语“包括”和“具有”以及它们任何变形，意图在于覆盖不排他的包含。例如包含了一系列步骤或模块的过程、方法、系统、产品或设备没有限定于已列出的步骤或模块，而是可选地还包括没有列出的步骤或模块，或可选地还包括对于这些过程、方法、产品或设备固有的其它步骤或模块。\n\n[0053]在本文中提及“实施例”意味着，结合实施例描述的特定特征、结构或特性可以包含在本申请的至少一个实施例中。在说明书中的各个位置出现该短语并不一定均是指相同的实施例，也不是与其它实施例互斥的独立的或备选的实施例。本领域技术人员显式地和隐式地理解的是，本文所描述的实施例可以与其它实施例相结合。\n\n[0054]本申请实施例提供了像素电路，所述像素电路包括但不限于以下实施例以及以下实施例的组合。\n\n[0055]在一实施例中，如图1所示，所述像素电路100包括：发光模块101；驱动模块102，所述驱动模块102的第一端01和所述发光模块101电性连接，所述驱动模块102的第一控制端02在第一时段用于加载第一信号，所述驱动模块102的第一控制端02在第二时段用于加载第二信号，所述第一信号和所述第二信号极性相反，所述第一时段和所述第二时段无交集。\n\n[0056]其中，如图1所示，所述像素电路00还包括电源模块103，所述发光模块101的电源端03和所述电源模块103电性连接，所述发光模块101的工作端04和所述驱动模块102的第一端01电性连接，所述电源模块103输出的工作电压一定时，所述驱动模块102可以控制所述发光模块101的发光情况。具体的，如图2所示，所述发光模块101可以包括微发光二极管1011，所述微发光二极管1011的阳极端可以配置为所述发光模块101的电源端03，所述微发光二极管1011的阴极端可以配置为所述发光模块101的工作端04，所述电源模块103输出的信号可以为一恒定高电压信号，为所述微发光二极管1011提供工作回路。\n\n[0057]在一实施例中，如图1所示，所述像素电路100还包括：第一信号模块104，所述第一信号模块104电性连接所述驱动模块102的第一控制端02，用于使所述驱动模块102的第一控制端02在所述第一时段加载为所述第一信号，所述第一信号的极性为负；第二信号模块105，所述第二信号模块105电性连接所述驱动模块102的第一控制端02，用于使所述驱动模块102的第一控制端02在所述第二时段加载为所述第二信号，所述第二信号的极性为正。\n\n[0058]可以理解的，由于所述第一信号模块104使所述驱动模块102的第一控制端02在所述第一时段加载为极性为负的所述第一信号，所述第二信号模块105使所述驱动模块102的第一控制端02在所述第二时段加载为极性为正的所述第二信号，可以理解的，所述驱动模块102的工作时长的一个周期中可以包括所述第一时段和所述第二时段，那么在所述驱动模块102的工作时长中，所述驱动模块102的第一控制端02可以交替地被加载极性不同的两种电压；进一步的，可以减缓所述驱动模块102的阈值电压的偏移，以稳定所述发光模块101的驱动电流，以提高显示面板显示的均匀性，并且降低了显示面板的寿命。\n\n[0059]在一实施例中，如图2所示，所述第一信号模块104包括第一信号源1041和第一开关1042，所述第一开关1042在所述第一时段开启以使所述第一信号源1041向所述驱动模块102的第一控制端02加载所述第一信号。具体的，所述第一开关1042的控制端05可以电性连接第一控制信号模块106，所述第一控制信号模块106可以输出呈周期性的第一脉冲信号，所述第一脉冲信号的脉宽可以等于所述第一时段，所述第一信号源1041输出所述第一信号，所述第一信号具体可以为一恒定的、且极性为负的电压信号；即当所述第一开关1042的控制端05被加载的所述第一脉冲信号处于所述第一脉冲信号的高电压期间，所述第一开关1042开启，所述第一信号通过所述第一开关1042加载在所述驱动模块102的第一控制端02。\n\n[0060]在一实施例中，如图2所示，所述第二信号模块105包括第二信号源1051和第二开关1052，所述第二开关1052在所述第二时段开启以使所述第二信号源1051向所述驱动模块102的第一控制端02加载所述第二信号。具体的，所述第二开关1052的控制端06可以电性连接第二控制信号模块107，所述第二控制信号模块107可以输出呈周期性的第二脉冲信号，所述第二脉冲信号的脉宽可以等于所述第二时段，所述第二信号源1042输出所述第二信号，所述第二信号具体可以为一恒定的、且极性为正的电压信号；即当所述第二开关1052的控制端06被加载的信号处于所述第二脉冲信号的高电压期间，所述第二开关1052开启，所述第二信号通过所述第二开关1052加载在所述驱动模块102的第一控制端02。\n\n[0061]在一实施例中，如图2所示，所述驱动模块102包括驱动薄膜晶体管1021，所述驱动薄膜晶体管1021为双栅薄膜晶体管，所述驱动薄膜晶体管1021的顶栅配置为所述驱动模块102的第一控制端02，所述驱动薄膜晶体管1021的底栅配置为所述驱动模块102的第二控制端08。具体的，所述驱动薄膜晶体管1021还可以包源漏极层，所述源漏极层包括同层设置的源极和漏极，所述顶栅、所述源漏极层和所述底栅层叠设置，所述驱动薄膜晶体管1021的阈值电压即为所述驱动模块102的阈值电压，所述驱动薄膜晶体管1021的顶栅和源极间的电压差和所述驱动薄膜晶体管1021的阈值电压的差值用于控制所述驱动薄膜晶体管1021的导通状态。\n\n[0062]其中，当所述驱动薄膜晶体管1021为一个N型垂直双栅极结构的晶体管时，所述驱动薄膜晶体管1021的阈值电压和所述驱动薄膜晶体管1021的顶栅呈正相关，同时所述驱动薄膜晶体管1021的阈值电压和所述驱动薄膜晶体管1021的底栅呈负相关，此处包括但不限于通过调整所述驱动薄膜晶体管1021的底栅以调整所述驱动薄膜晶体管1021的阈值电压，具体的，此时所述驱动薄膜晶体管1021的底栅的电压跟随所述驱动薄膜晶体管1021的漏极的电压的变化而变化。\n\n[0063]在一实施例中，如图1所示，所述像素电路100还包括补偿模块108，所述补偿模块108第一端07和所述驱动模块102的第二控制端08电性连接，所述补偿模块108的第二端09和所述驱动模块102的第一端01电性连接，所述补偿模块108用于调节所述驱动模块102的阈值电压。具体的，所述补偿模块108的第一端07可以通过控制所述驱动模块102的第二控制端08的电压以调节所述驱动模块102的第二控制端08并使得所述驱动模块102的阈值电压处于预设电压范围内，其中，所述驱动模块102的阈值电压使得所述驱动模块102处于临界导通状态。\n\n[0064]可以理解的，当所述驱动模块102的阈值电压发生漂移时，会影响所述发光模块101的发光情况，本实施例中通过将所述驱动模块102设置为还包括所述第二控制端08，并且将所述驱动模块102的第二控制端08电性连接所述补偿模块108，以控制所述驱动模块102的第二控制端08，其中，所述驱动模块102具有“所述驱动模块102的阈值电压与所述驱动模块102的第二控制端08的电压呈负相关或者正相关”的性质，因此本实施例中可以根据实际情况合理控制所述第二控制端08的信号，使得所述驱动模块102的阈值电压处于所述预设电压范围内，即提高了所述驱动模块102的阈值电压的稳定性，提高所述发光模块90的发光的准确性。\n\n[0065]在一实施例中，如图2所示，所述补偿模块108包括：补偿电容1081，所述补偿电容1081的第一端10和所述驱动模块102的第二控制端08电性连接，所述补偿电容1081的第二端21接地，所述补偿电容1081用于存储所述驱动模块102的第二控制端08的信号；补偿薄膜晶体管1082，所述补偿薄膜晶体管1082的栅极11电性连接所述第二信号模块105，所述补偿薄膜晶体管1082的源极12电性连接所述驱动模块102的第一端01，所述补偿薄膜晶体管1082的漏极13电性连接所述驱动模块102的第二控制端08以调节所述驱动模块102的阈值电压。具体的，如图2所示，当所述第二信号模块105输出高电压时，所述补偿薄膜晶体管1082可以开启，使得所述驱动薄膜晶体管1021的漏极和顶栅极接通，所述驱动薄膜晶体管1021的漏极和底栅的电位下降，直至所述驱动薄膜晶体管1021截至，此时所述补偿电容1081获取所述驱动薄膜晶体管1021的阈值电压。\n\n[0066]需要注意的是，当所述驱动薄膜晶体管1021为N型垂直单栅极结构的晶体管时，如图3所示，一般所述补偿薄膜晶体管1082的源极和漏极会分别电性连接所述N型垂直单栅极结构的晶体管的漏极和栅极，若所述N型垂直单栅极结构的晶体管的栅极被加载高电压时，所述N型垂直单栅极结构的晶体管形成二极管结构。假设所述N型垂直单栅极结构的晶体管的阈值电压为Vth，所述N型垂直单栅极结构的晶体管的栅极和源极的电压差为Vgs，如图4所示，当Vth>0V时，此时所述N型垂直单栅极结构的晶体管的栅极的电压会通过所述二极管结构释放，直至Vgs＝Vth时，所述二极管结构截止，此时可以从所述N型垂直单栅极结构的晶体管的栅极侦测到所述Vth进一步做后续的Vth补偿；如图5所示，当Vth[0067]进一步的，如图6所示，当所述驱动薄膜晶体管1021为N型垂直双栅极结构的晶体管时，假设所述N型垂直双栅极结构的晶体管的阈值电压为Vth，所述N型垂直双栅极结构的晶体管的底栅和源极的电压差为Vbs，如图7所示，为不同两种类的N型垂直双栅极结构的晶体管的所述Vth和所述Vbs的函数图像，观察可知，对于不同种类的N型垂直双栅极结构的晶体管而言，所述Vth和所述Vbs均呈线性关系，即每一所述N型垂直双栅极结构的晶体管的Vbs均能够线性动态调节Vth；因此，本实施例中将所述驱动薄膜晶体管1021设置为一个N型垂直双栅极结构的晶体管，通过改变所述N型垂直双栅极结构的晶体管的底栅的电压来调节Vth为正值从而对Vth的侦测。\n\n[0068]在一实施例中，如图1所示，所述像素电路100还包括：数据信号模块109；写入模块201，所述写入模块201的输入端14和所述数据信号模块109电性连接；存储模块202，所述存储模块202的第一端15和所述写入模块201的输出端16、所述驱动模块102的第一控制端02连接，所述存储模块202的第二端17和所述驱动模块102的第二端22电性连接。在一实施例中，如图2所示，所述写入模块201可以包括写入开关2011，所述写入开关2011的第一端配置为所述写入模块201的输入端14，所述写入开关2011的第二端配置为所述写入模块201的输出端16，所述写入开关2011的控制端20可以电性连接扫描电压模块203，所述扫描电压模块203用于控制所述写入开关2011是否开启；所述存储模块202可以包括存储电容2021，所述存储电容2021的第一端配置为所述存储模块202的第一端15，所述存储电容2021的第二端配置为所述存储模块202的第二端17，所述存储电容2021用于存储所述数据信号。具体的，当所述扫描电压模块203控制所述写入开关2011开启时，所述数据信号模块109通过所述写入开关2011向所述存储电容2021和所述驱动薄膜晶体管1021写入所述数据信号。\n\n[0069]在一实施例中，如图1所示，所述像素电路100还包括预存模块204，所述预存模块204的输入端18和所述写入模块201的输出端16电性连接，所述预存模块204的输出端19和所述存储模块202的第一端15电性连接，所述预存模块204用于存储所述数据信号模块109提供的数据信号。可以理解的，所述预存模块204将所述写入模块201和所述存储模块202电性连接，可以先缓存所述数据信号以在合适的时候向所述存储模块202写入所述数据信号。\n\n[0070]在一实施例中，如图2所示，所述预存模块204包括：预存电容2041，所述预存电容2041的第一端配置为所述预存模块201的输入端18，所述预存电容2041的第二端接地，所述预存电容2041用于存储所述数据信号；预存开关2042，所述预存开关2042的第一端和所述预存电容2041的第一端电性连接，所述预存开关2042的第二端配置为所述预存模块204的输出端19，所述预存开关2042用于控制所述驱动模块102的第一控制端02是否加载为所述数据信号。可以理解的，当所述扫描电压模块203控制所述写入开关2011开启时，所述数据信号通过所述写入开关2011预存在所述预存电容2041上；当预存电压模块205控制所述预存开关2042开启时，所述数据信号通过所述预存开关2042写入所述存储电容2021和所述驱动薄膜晶体管1021。\n\n[0071]本申请实施例提供了驱动方法，所述驱动方法应用于上文任一所述像素电路，所述驱动方法包括但不限于以下实施例以及以下实施例的组合。\n\n[0072]在一实施例中，如图8所示，所述驱动方法包括但不限于以下步骤。\n\n[0073]S10，在所述第二时段向所述驱动模块的第一控制端加载所述第二信号。\n\n[0074]在一实施例中，如图1所示，所述像素电路100还包括第二信号模块105，所述第二信号模块105电性连接所述驱动模块102的第一控制端02，用于使所述驱动模块102的第一控制端02在所述第二时段加载为所述第二信号，所述第二信号的极性为正。\n\n[0075]在一实施例中，如图2所示，所述第二信号模块105包括第二信号源1051和第二开关1052，所述第二开关1052在所述第二时段开启以使所述第二信号源1051向所述驱动模块102的第一控制端02加载所述第二信号。具体的，所述第二开关1052的控制端06可以电性连接第二控制信号模块107，所述第二控制信号模块107可以输出呈周期性的第二脉冲信号，所述第二脉冲信号的脉宽可以等于所述第二时段，所述第二信号源1042输出所述第二信号，所述第二信号具体可以为一恒定的、且极性为正的电压信号；即当所述第二开关1052的控制端06被加载的信号处于所述第二脉冲信号的高电压期间，所述第二开关1052开启，所述第二信号通过所述第二开关1052加载在所述驱动模块102的第一控制端02。\n\n[0076]S20，驱动所述驱动模块以控制所述发光模块发光。\n\n[0077]其中，如图1所示，所述像素电路00还包括电源模块103，所述发光模块101的电源端03和所述电源模块103电性连接，所述发光模块101的工作端04和所述驱动模块102的第一端01电性连接，所述电源模块103输出的工作电压一定时，所述驱动模块102可以控制所述发光模块101的发光情况。具体的，如图2所示，所述发光模块101可以包括微发光二极管1011，所述微发光二极管1011的阳极端可以配置为所述发光模块101的电源端03，所述微发光二极管1011的阴极端可以配置为所述发光模块101的工作端04，所述电源模块103输出的信号可以为一恒定高电压信号，且恒定高电压信号大于所述驱动模块102的第一端01的电压，使得所述微发光二极管1011发光。\n\n[0078]S30，在所述第一时段向所述驱动模块的第一控制端加载所述第一信号。\n\n[0079]在一实施例中，如图1所示，所述像素电路100还包括第一信号模块104，所述第一信号模块104电性连接所述驱动模块102的第一控制端，用于使所述驱动模块102的第一控制端02在所述第一时段加载为所述第一信号，所述第一信号的极性为负。\n\n[0080]在一实施例中，如图2所示，所述第一信号模块104包括第一信号源1041和第一开关1042，所述第一开关1042在所述第一时段开启以使所述第一信号源1041向所述驱动模块102的第一控制端02加载所述第一信号。具体的，所述第一开关1042的控制端05可以电性连接第一控制信号模块106，所述第一控制信号模块106可以输出呈周期性的第一脉冲信号，所述第一脉冲信号的脉宽可以等于所述第一时段，所述第一信号源1041输出所述第一信号，所述第一信号具体可以为一恒定的、且极性为负的电压信号；即当所述第一开关1042的控制端05被加载的所述第一脉冲信号处于所述第一脉冲信号的高电压期间，所述第一开关1042开启，所述第一信号通过所述第一开关1042加载在所述驱动模块102的第一控制端02。\n\n[0081]可以理解的，由于所述第一信号模块104使所述驱动模块102的第一控制端02在所述第一时段加载为极性为负的所述第一信号，所述第二信号模块105使所述驱动模块102的第一控制端02在所述第二时段加载为极性为正的所述第二信号，可以理解的，所述驱动模块102的工作时长的一个周期中可以包括所述第一时段和所述第二时段，那么在所述驱动模块102的工作时长中，所述驱动模块102的第一控制端02可以交替地被加载极性不同的两种电压；进一步的，可以减缓所述驱动模块102的阈值电压的偏移，以稳定所述发光模块101的驱动电流，以提高显示面板显示的均匀性，并且降低了显示面板的寿命。\n\n[0082]在一实施例中，图9为如图2所示的电路图对应的时序图，具体的，EVDD可以为所述电源模块103输出的电信号，VSS可以为加载在所述存储电容的第二端和所述驱动薄膜晶体管的源极上的信号，Sense可以为加载在所述第一开关1042的控制端05上的信号，Vref 1可以为所述第一信号源1041输出的信号，Merge可以为所述预存电压模块205输出的信号，Scan可以为所述扫描电压模块203输出的信号，Change可以为加载在所述第二开关1052的控制端06上的信号，Vref 2可以为所述第二信号源1051输出的信号，此处以所述第一开关1042和所述第二开关1052均为N型薄膜晶体管为例进行说明，即所述第一开关1042的控制端05和所述第二开关1052的控制端06分别为对应的N型薄膜晶体管的栅极。\n\n[0083]在一实施例中，结合如图9所示的时序图和如图2所示的电路图，所述驱动方法包括但不限于如图10所示的步骤。\n\n[0084]S101，在初始化阶段，控制所述电源模块向所述OLED器件的的阳极端输入低电压，控制变压模块向所述驱动薄膜晶体管的源极和所述存储模块电容的第二端输入高电压，控制第二信号控制模块向所述第二开关的栅极和所述补偿薄膜晶体管的栅极输入高电压，控制所述第二信号源输出高电压。\n\n[0085]可以理解的，如图2、9所示，在所述初始化阶段t1，由于所述Sense为高电压，即所述第二控制信号模块107输出高电压，所述第二开关1052开启，且所述Vref 1为高电压，即所述第二信号源1051输出高电压，所述驱动薄膜晶体管1021开启，且所述电源模块103输出的所述EVDD为低电压，所述变压模块206所述VSS为高电压，即所述微发光二极管1011的的阳极端电压低于所述OLED器件的的阴极端电压，即所述微发光二极管1011未导通，故所述微发光二极管1011处于熄灭状态；同时，如图2所示，所述补偿薄膜晶体管1082的栅极11也电性连接所述第二控制信号模块107，即所述补偿薄膜晶体管1082也开启，即所述驱动薄膜晶体管1021的底栅和漏极导通，故所述VSS经过所述驱动薄膜晶体管1021和所述补偿薄膜晶体管1082传输至所述驱动薄膜晶体管1021的底栅和所述补偿电容1081的第一端10，使得所述驱动薄膜晶体管1021的底栅的电压升高，进一步调节所述驱动薄膜晶体管1021的阈值电压为负值。\n\n[0086]S102，在补偿阶段，维持所述电源模块向所述OLED器件的的阳极端输入低电压，控制所述变压模块向所述驱动薄膜晶体管的源极和所述存储模块电容的第二端输入低电压，控制第二控制模块向所述第二开关的栅极和所述补偿薄膜晶体管的栅极输入高电压，控制所述第二信号源输出低电压。\n\n[0087]可以理解的，如图2、9所示，在所述补偿阶段t2，由于所述Sense为高电压，同理，所述第二开关1052开启，且所述Vref 1为低电压，结合所述驱动薄膜晶体管1021的阈值电压为负值，此时所述驱动薄膜晶体管1021的顶栅的电压仍然高于所述驱动薄膜晶体管1021的阈值电压，即所述驱动薄膜晶体管1021仍然开启；且所述EVDD为低电压，所述VSS为低电压，同理，所述微发光二极管1011处于熄灭状态；同时，所述驱动薄膜晶体管1021的底栅的电压依次通过所述补偿薄膜晶体管1082和所述驱动薄膜晶体管1021放电至所述变压模块206，使得所述驱动薄膜晶体管1021的底栅的电压降低，以至于所述驱动薄膜晶体管1021的阈值电压上升，直至所述驱动薄膜晶体管1021的阈值电压等于所述驱动薄膜晶体管1021的顶栅的电压也即所述Vref 1此时的电压时，所述驱动薄膜晶体管1021截至，所述补偿电容1081存储所述驱动薄膜晶体管1021的底栅的电压。\n\n[0088]S103，在写入阶段，控制所述预存电压模块向所述预存开关输入高电压。\n\n[0089]可以理解的，如图2、9所示，在所述写入阶段t3，所述Merge为高电压，此时上一帧预存在所述预存电容2041中的所述数据信号可以通过所述预存开关2042写入所述存储电容2021中。\n\n[0090]S104，在发光阶段，控制所述电源模块向所述OLED器件的的阳极端输入高电压，控制所述预存电压模块向所述预存开关输入低电压，以及控制所述扫描电压模块向所述写入开关的控制端输入高电压。\n\n[0091]可以理解的，如图2、9所示，在所述发光阶段t4，所述微发光二极管1011的的阳极端的电压为高电压，故所述微发光二极管1011发光，其中流经所述微发光二极管1011的电流为所述μ为所述驱动薄膜晶体管1021的载流子迁移率，所述Cox为单位面积电容，所述(W/L)为所述驱动薄膜晶体管1021的宽长比，所述α为所述数据信号传输到所述驱动薄膜晶体管1021的栅极的效率，所述Vdata为所述数据信号的电压值，所述Vref为所述所述第一信号源1041输出的信号处于高电压的电压值；同时，所述写入开关2011开启，本帧的所述数据信号模块109通过所述写入开关2011预存于所述预存电容2041中。\n\n[0092]S105，在反转阶段，控制第一控制模块向所述第一开关的栅极输入高电压，控制所述第一信号源输出低电压。\n\n[0093]可以理解的，如图2、9所示，在所述反转阶段t5，由于所述Change为高电压，即所述第一控制信号模块106输出高电压，所述第一开关1042开启，且所述Vref 2为低电压，即所述第一信号源1041输出低电压，所述驱动薄膜晶体管1021的栅极和源极之间的电压差为负值，与之前相反；具体的，所述反转阶段t5可以占每帧的周期的一半，例如每帧的周期，即t1至t5之和为16.7毫秒，则所述反转阶段t5可以为8.3毫秒。进一步的，所述反转阶段也可以理解为对所述像素电路100对应的像素单元进行插黑处理，即本实施例还可以实现对于所述像素电路100对应的像素单元进行插黑处理，以减弱拖影现象。\n\n[0094]需要注意的是，当采用SiNx:H制作所述驱动薄膜晶体管1021的有源层时，正偏应力主要引起a-Si:H中De态密度增加，负偏应力主要引起De态密度的减少；当采用SiO2制作所述驱动薄膜晶体管1021的有源层时，阈值电压的漂移是在正偏压下a-Si:H中De态的产生和在负偏压下Dh态的产生造成；当采用(SiNx:H)/SiO2复合层制作所述驱动薄膜晶体管1021的有源层时，阈值电压的漂移是在正偏压下a-Si:H中De态增加同时Dh态减少和在负偏压下De态减少同时Dh态增加造成。\n\n[0095]可以理解的，本实施例中通过交替向所述驱动薄膜晶体管1021的栅极输入极性相反的两个电压信号，使得所述驱动薄膜晶体管1021的栅极和源极之间的电压差交替呈现为正值和负值，根据上述分析可知，本实施例可以使a-Si:H中态的产生是个动态平衡过程，即正偏应力下主要引起所述驱动薄膜晶体管1021中的有源层非晶硅中的De态密度增加和Dh态密度减少，而负偏应力主要引起De态密度的减少和Dh态密度的增加，且正偏应力和负偏应力交替进行，使所述驱动薄膜晶体管1021的阈值电压的漂移保持了一个动态平衡来实现输出电流的稳定。\n\n[0096]本申请实施例还提供了显示面板，所述显示面板包括如上文任一项所述的像素电路。\n\n[0097]本申请实施例还提供了显示装置，所述显示装置包括如上文所述的显示面板。\n\n[0098]本申请提供了像素电路及其驱动方法、显示面板和显示装置，所述像素电路包括发光模块和驱动模块，通过将所述驱动模块的第一端和所述发光模块电性连接，所述驱动模块的第一控制端在第一时段用于加载第一信号，所述驱动模块的第一控制端在第二时段用于加载第二信号，所述第一信号和所述第二信号极性相反，所述第一时段和所述第二时段无交集，以实现所述驱动模块的第一控制端在所述第一时段和所述第二时段交替地被加载为极性相反的所述第一信号和所述第二信号；因此，本方案中将所述驱动模块的第一控制端交替地被设置为极性相反的两种信号，以此减缓所述驱动模块的阈值电压的偏移，以稳定所述发光模块的驱动电流，以提高显示面板显示的均匀性，并且降低了显示面板的寿命。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及显示器件的制造，具体涉及像素电路及其驱动方法、显示面板和显示装置。\n\n背景技术\n\n[0002]OLED(Organic Light Emitting Diode，有机发光二极管)显示器件具备重量轻、厚度薄、可弯曲、视角范围大等优点。\n\n[0003]目前，OLED显示器的像素电路中采用薄膜晶体管控制通过OLED的电流以控制OLED的发光情况，但是，该薄膜晶体管在工作时栅极被唯一且固定的信号源加载为正信号，导致该薄膜晶体管的栅极信号和源极信号的差值长期保持为正信号，以至于该薄膜晶体管的阈值电压漂移呈单一变化，进一步加快了该薄膜晶体管的阈值电压的漂移，严重影响了显示面板显示的均匀性，并且降低了显示面板的寿命。\n\n[0004]因此，有必要提供可以减缓用于驱动OLED发光的薄膜晶体管的阈值电压的漂移的像素电路及其驱动方法、显示面板和显示装置。\n\n发明内容\n\n[0005]本申请实施例提供像素电路及其驱动方法、显示面板和显示装置，通过将驱动模块的第一控制端在第一时段用于加载第一信号，所述驱动模块的第一控制端在第二时段用于加载第二信号，所述第一信号和所述第二信号极性相反，所述第一时段和所述第二时段无交集；以解决现有的驱动模块的阈值电压单一方向漂移较严重，从而影响了显示面板显示的均匀性，并且降低了显示面板的寿命的问题。\n\n[0006]本申请实施例提供像素电路，所述像素电路包括：\n\n[0007]发光模块；\n\n[0008]驱动模块，所述驱动模块的第一端和所述发光模块电性连接，所述驱动模块的第一控制端在第一时段用于加载第一信号，所述驱动模块的第一控制端在第二时段用于加载第二信号，所述第一信号和所述第二信号极性相反，所述第一时段和所述第二时段无交集。\n\n[0009]在一实施例中，所述像素电路还包括：\n\n[0010]第一信号模块，所述第一信号模块电性连接所述驱动模块的第一控制端，用于使所述驱动模块的第一控制端在所述第一时段加载为所述第一信号，所述第一信号的极性为负；\n\n[0011]第二信号模块，所述第二信号模块电性连接所述驱动模块的第一控制端，用于使所述驱动模块的第一控制端在所述第二时段加载为所述第二信号，所述第二信号的极性为正。\n\n[0012]在一实施例中，所述第一信号模块包括第一信号源和第一开关，所述第一开关在所述第一时段开启以使所述第一信号源向所述驱动模块的第一控制端加载所述第一信号。\n\n[0013]在一实施例中，所述第二信号模块包括第二信号源和第二开关，所述第二开关在所述第二时段开启以使所述第二信号源向所述驱动模块的第一控制端加载所述第二信号。\n\n[0014]在一实施例中，所述驱动模块包括：\n\n[0015]驱动薄膜晶体管，所述驱动薄膜晶体管为双栅薄膜晶体管，所述驱动薄膜晶体管的顶栅配置为所述驱动模块的第一控制端，所述驱动薄膜晶体管的底栅配置为所述驱动模块的第二控制端。\n\n[0016]在一实施例中，所述像素电路还包括：\n\n[0017]补偿模块，所述补偿模块的第一端和所述驱动模块的第二控制端电性连接，所述补偿模块的第二端和所述驱动模块的第一端电性连接，所述补偿模块用于调节所述驱动模块的阈值电压。\n\n[0018]在一实施例中，所述补偿模块包括：\n\n[0019]补偿电容，所述补偿电容的第一端和所述驱动模块的第二控制端电性连接，所述补偿电容的第二端接地，所述补偿电容用于存储所述驱动模块的第二控制端的信号；\n\n[0020]补偿薄膜晶体管，所述补偿薄膜晶体管的栅极电性连接所述第二信号模块，所述补偿薄膜晶体管的源极电性连接所述驱动模块的第一端，所述补偿薄膜晶体管的漏极电性连接所述驱动模块的第二控制端以调节所述驱动模块的阈值电压。\n\n[0021]在一实施例中，所述像素电路还包括：\n\n[0022]数据信号模块；\n\n[0023]写入模块，所述写入模块的输入端和所述数据信号模块电性连接；\n\n[0024]存储模块，所述存储模块的第一端和所述写入模块的输出端、所述驱动模块的第一控制端连接，所述存储模块的第二端和所述驱动模块的第二端电性连接。\n\n[0025]在一实施例中，所述写入模块包括写入开关，所述写入开关的第一端配置为所述写入模块的输入端，所述写入开关的第二端配置为所述写入模块的输出端，所述写入开关的控制端电性连接扫描电压模块，所述扫描电压模块用于控制所述写入开关是否开启，以控制所述数据信号模块是否向所述存储电容写入数据信号；\n\n[0026]所述存储模块包括存储电容，所述存储电容的第一端配置为所述存储模块的第一端，所述储电容的第二端配置为所述存储模块的第二端，所述存储电容用于存储所述数据信号。\n\n[0027]在一实施例中，所述像素电路还包括：\n\n[0028]预存模块，所述预存模块的输入端和所述写入模块的输出端电性连接，所述预存模块的输出端和所述存储模块的第一端电性连接，所述预存模块用于存储所述数据信号模块提供的数据信号。\n\n[0029]在一实施例中，所述预存模块包括：\n\n[0030]预存电容，所述预存电容的第一端配置为所述预存模块的输入端，所述预存电容的第二端接地，所述预存电容用于存储所述数据信号；\n\n[0031]预存开关，所述预存开关的第一端和所述预存电容的第一端电性连接，所述预存开关的第二端配置为所述预存模块的输出端，所述预存开关用于控制所述驱动模块的第一控制端是否加载为所述数据信号。\n\n[0032]在一实施例中，所述发光模块包括微发光二极管。\n\n[0033]本申请实施例还提供显示面板，所述显示面板包括如上文任一项所述的像素电路。\n\n[0034]本申请实施例还提供显示装置，所述显示面板包括所述显示面板。\n\n[0035]本申请实施例还提供驱动方法，所述驱动方法应用于上文任一项所述的像素电路，所述驱动方法包括：\n\n[0036]在所述第二时段向所述驱动模块的第一控制端加载所述第二信号；\n\n[0037]驱动所述驱动模块以控制所述发光模块发光；\n\n[0038]在所述第一时段向所述驱动模块的第一控制端加载所述第一信号。\n\n[0039]本申请提供了像素电路及其驱动方法、显示面板和显示装置，所述像素电路包括发光模块和驱动模块，通过将所述驱动模块的第一端和所述发光模块电性连接，所述驱动模块的第一控制端在第一时段用于加载第一信号，所述驱动模块的第一控制端在第二时段用于加载第二信号，所述第一信号和所述第二信号极性相反，所述第一时段和所述第二时段无交集，以实现所述驱动模块的第一控制端在所述第一时段和所述第二时段交替地被加载为极性相反的所述第一信号和所述第二信号；因此，本方案中将所述驱动模块的第一控制端交替地被设置为极性相反的两种信号，以此减缓所述驱动模块的阈值电压的偏移，以稳定所述发光模块的驱动电流，以提高显示面板显示的均匀性，并且降低了显示面板的寿命。\n\n附图说明\n\n[0040]下面通过附图来对本申请进行进一步说明。需要说明的是，下面描述中的附图仅仅是用于解释说明本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0041]图1为本申请实施例提供的像素电路的结构框图；\n\n[0042]图2为本申请实施例提供的像素电路的电路图；\n\n[0043]图3为本申请实施例提供的驱动薄膜晶体管和补偿薄膜晶体管的连接示意图；\n\n[0044]图4为本申请实施例提供的一种驱动薄膜晶体管的栅极和源极的电压差随时间变化的曲线图；\n\n[0045]图5为本申请实施例提供的另一种驱动薄膜晶体管的栅极和源极的电压差随时间变化的曲线图；\n\n[0046]图6为本申请实施例提供的驱动薄膜晶体管的结构图；\n\n[0047]图7为本申请实施例提供的两种类的N型垂直双栅极结构的晶体管的Vth随Vbs变化的曲线图；\n\n[0048]图8为本申请实施例提供的一种驱动方法的流程图；\n\n[0049]图9为本申请实施例提供的驱动方法的时序图；\n\n[0050]图10为本申请实施例提供的另一种驱动方法的流程图。\n\n具体实施方式\n\n[0051]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整的描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0052]本申请中的术语“第一”、“第二”是用于区别不同对象，而不是用于描述特定顺序。此外，术语“包括”和“具有”以及它们任何变形，意图在于覆盖不排他的包含。例如包含了一系列步骤或模块的过程、方法、系统、产品或设备没有限定于已列出的步骤或模块，而是可选地还包括没有列出的步骤或模块，或可选地还包括对于这些过程、方法、产品或设备固有的其它步骤或模块。\n\n[0053]在本文中提及“实施例”意味着，结合实施例描述的特定特征、结构或特性可以包含在本申请的至少一个实施例中。在说明书中的各个位置出现该短语并不一定均是指相同的实施例，也不是与其它实施例互斥的独立的或备选的实施例。本领域技术人员显式地和隐式地理解的是，本文所描述的实施例可以与其它实施例相结合。\n\n[0054]本申请实施例提供了像素电路，所述像素电路包括但不限于以下实施例以及以下实施例的组合。\n\n[0055]在一实施例中，如图1所示，所述像素电路100包括：发光模块101；驱动模块102，所述驱动模块102的第一端01和所述发光模块101电性连接，所述驱动模块102的第一控制端02在第一时段用于加载第一信号，所述驱动模块102的第一控制端02在第二时段用于加载第二信号，所述第一信号和所述第二信号极性相反，所述第一时段和所述第二时段无交集。\n\n[0056]其中，如图1所示，所述像素电路00还包括电源模块103，所述发光模块101的电源端03和所述电源模块103电性连接，所述发光模块101的工作端04和所述驱动模块102的第一端01电性连接，所述电源模块103输出的工作电压一定时，所述驱动模块102可以控制所述发光模块101的发光情况。具体的，如图2所示，所述发光模块101可以包括微发光二极管1011，所述微发光二极管1011的阳极端可以配置为所述发光模块101的电源端03，所述微发光二极管1011的阴极端可以配置为所述发光模块101的工作端04，所述电源模块103输出的信号可以为一恒定高电压信号，为所述微发光二极管1011提供工作回路。\n\n[0057]在一实施例中，如图1所示，所述像素电路100还包括：第一信号模块104，所述第一信号模块104电性连接所述驱动模块102的第一控制端02，用于使所述驱动模块102的第一控制端02在所述第一时段加载为所述第一信号，所述第一信号的极性为负；第二信号模块105，所述第二信号模块105电性连接所述驱动模块102的第一控制端02，用于使所述驱动模块102的第一控制端02在所述第二时段加载为所述第二信号，所述第二信号的极性为正。\n\n[0058]可以理解的，由于所述第一信号模块104使所述驱动模块102的第一控制端02在所述第一时段加载为极性为负的所述第一信号，所述第二信号模块105使所述驱动模块102的第一控制端02在所述第二时段加载为极性为正的所述第二信号，可以理解的，所述驱动模块102的工作时长的一个周期中可以包括所述第一时段和所述第二时段，那么在所述驱动模块102的工作时长中，所述驱动模块102的第一控制端02可以交替地被加载极性不同的两种电压；进一步的，可以减缓所述驱动模块102的阈值电压的偏移，以稳定所述发光模块101的驱动电流，以提高显示面板显示的均匀性，并且降低了显示面板的寿命。\n\n[0059]在一实施例中，如图2所示，所述第一信号模块104包括第一信号源1041和第一开关1042，所述第一开关1042在所述第一时段开启以使所述第一信号源1041向所述驱动模块102的第一控制端02加载所述第一信号。具体的，所述第一开关1042的控制端05可以电性连接第一控制信号模块106，所述第一控制信号模块106可以输出呈周期性的第一脉冲信号，所述第一脉冲信号的脉宽可以等于所述第一时段，所述第一信号源1041输出所述第一信号，所述第一信号具体可以为一恒定的、且极性为负的电压信号；即当所述第一开关1042的控制端05被加载的所述第一脉冲信号处于所述第一脉冲信号的高电压期间，所述第一开关1042开启，所述第一信号通过所述第一开关1042加载在所述驱动模块102的第一控制端02。\n\n[0060]在一实施例中，如图2所示，所述第二信号模块105包括第二信号源1051和第二开关1052，所述第二开关1052在所述第二时段开启以使所述第二信号源1051向所述驱动模块102的第一控制端02加载所述第二信号。具体的，所述第二开关1052的控制端06可以电性连接第二控制信号模块107，所述第二控制信号模块107可以输出呈周期性的第二脉冲信号，所述第二脉冲信号的脉宽可以等于所述第二时段，所述第二信号源1042输出所述第二信号，所述第二信号具体可以为一恒定的、且极性为正的电压信号；即当所述第二开关1052的控制端06被加载的信号处于所述第二脉冲信号的高电压期间，所述第二开关1052开启，所述第二信号通过所述第二开关1052加载在所述驱动模块102的第一控制端02。\n\n[0061]在一实施例中，如图2所示，所述驱动模块102包括驱动薄膜晶体管1021，所述驱动薄膜晶体管1021为双栅薄膜晶体管，所述驱动薄膜晶体管1021的顶栅配置为所述驱动模块102的第一控制端02，所述驱动薄膜晶体管1021的底栅配置为所述驱动模块102的第二控制端08。具体的，所述驱动薄膜晶体管1021还可以包源漏极层，所述源漏极层包括同层设置的源极和漏极，所述顶栅、所述源漏极层和所述底栅层叠设置，所述驱动薄膜晶体管1021的阈值电压即为所述驱动模块102的阈值电压，所述驱动薄膜晶体管1021的顶栅和源极间的电压差和所述驱动薄膜晶体管1021的阈值电压的差值用于控制所述驱动薄膜晶体管1021的导通状态。\n\n[0062]其中，当所述驱动薄膜晶体管1021为一个N型垂直双栅极结构的晶体管时，所述驱动薄膜晶体管1021的阈值电压和所述驱动薄膜晶体管1021的顶栅呈正相关，同时所述驱动薄膜晶体管1021的阈值电压和所述驱动薄膜晶体管1021的底栅呈负相关，此处包括但不限于通过调整所述驱动薄膜晶体管1021的底栅以调整所述驱动薄膜晶体管1021的阈值电压，具体的，此时所述驱动薄膜晶体管1021的底栅的电压跟随所述驱动薄膜晶体管1021的漏极的电压的变化而变化。\n\n[0063]在一实施例中，如图1所示，所述像素电路100还包括补偿模块108，所述补偿模块108第一端07和所述驱动模块102的第二控制端08电性连接，所述补偿模块108的第二端09和所述驱动模块102的第一端01电性连接，所述补偿模块108用于调节所述驱动模块102的阈值电压。具体的，所述补偿模块108的第一端07可以通过控制所述驱动模块102的第二控制端08的电压以调节所述驱动模块102的第二控制端08并使得所述驱动模块102的阈值电压处于预设电压范围内，其中，所述驱动模块102的阈值电压使得所述驱动模块102处于临界导通状态。\n\n[0064]可以理解的，当所述驱动模块102的阈值电压发生漂移时，会影响所述发光模块101的发光情况，本实施例中通过将所述驱动模块102设置为还包括所述第二控制端08，并且将所述驱动模块102的第二控制端08电性连接所述补偿模块108，以控制所述驱动模块102的第二控制端08，其中，所述驱动模块102具有“所述驱动模块102的阈值电压与所述驱动模块102的第二控制端08的电压呈负相关或者正相关”的性质，因此本实施例中可以根据实际情况合理控制所述第二控制端08的信号，使得所述驱动模块102的阈值电压处于所述预设电压范围内，即提高了所述驱动模块102的阈值电压的稳定性，提高所述发光模块90的发光的准确性。\n\n[0065]在一实施例中，如图2所示，所述补偿模块108包括：补偿电容1081，所述补偿电容1081的第一端10和所述驱动模块102的第二控制端08电性连接，所述补偿电容1081的第二端21接地，所述补偿电容1081用于存储所述驱动模块102的第二控制端08的信号；补偿薄膜晶体管1082，所述补偿薄膜晶体管1082的栅极11电性连接所述第二信号模块105，所述补偿薄膜晶体管1082的源极12电性连接所述驱动模块102的第一端01，所述补偿薄膜晶体管1082的漏极13电性连接所述驱动模块102的第二控制端08以调节所述驱动模块102的阈值电压。具体的，如图2所示，当所述第二信号模块105输出高电压时，所述补偿薄膜晶体管1082可以开启，使得所述驱动薄膜晶体管1021的漏极和顶栅极接通，所述驱动薄膜晶体管1021的漏极和底栅的电位下降，直至所述驱动薄膜晶体管1021截至，此时所述补偿电容1081获取所述驱动薄膜晶体管1021的阈值电压。\n\n[0066]需要注意的是，当所述驱动薄膜晶体管1021为N型垂直单栅极结构的晶体管时，如图3所示，一般所述补偿薄膜晶体管1082的源极和漏极会分别电性连接所述N型垂直单栅极结构的晶体管的漏极和栅极，若所述N型垂直单栅极结构的晶体管的栅极被加载高电压时，所述N型垂直单栅极结构的晶体管形成二极管结构。假设所述N型垂直单栅极结构的晶体管的阈值电压为Vth，所述N型垂直单栅极结构的晶体管的栅极和源极的电压差为Vgs，如图4所示，当Vth>0V时，此时所述N型垂直单栅极结构的晶体管的栅极的电压会通过所述二极管结构释放，直至Vgs＝Vth时，所述二极管结构截止，此时可以从所述N型垂直单栅极结构的晶体管的栅极侦测到所述Vth进一步做后续的Vth补偿；如图5所示，当Vth[0067]进一步的，如图6所示，当所述驱动薄膜晶体管1021为N型垂直双栅极结构的晶体管时，假设所述N型垂直双栅极结构的晶体管的阈值电压为Vth，所述N型垂直双栅极结构的晶体管的底栅和源极的电压差为Vbs，如图7所示，为不同两种类的N型垂直双栅极结构的晶体管的所述Vth和所述Vbs的函数图像，观察可知，对于不同种类的N型垂直双栅极结构的晶体管而言，所述Vth和所述Vbs均呈线性关系，即每一所述N型垂直双栅极结构的晶体管的Vbs均能够线性动态调节Vth；因此，本实施例中将所述驱动薄膜晶体管1021设置为一个N型垂直双栅极结构的晶体管，通过改变所述N型垂直双栅极结构的晶体管的底栅的电压来调节Vth为正值从而对Vth的侦测。\n\n[0068]在一实施例中，如图1所示，所述像素电路100还包括：数据信号模块109；写入模块201，所述写入模块201的输入端14和所述数据信号模块109电性连接；存储模块202，所述存储模块202的第一端15和所述写入模块201的输出端16、所述驱动模块102的第一控制端02连接，所述存储模块202的第二端17和所述驱动模块102的第二端22电性连接。在一实施例中，如图2所示，所述写入模块201可以包括写入开关2011，所述写入开关2011的第一端配置为所述写入模块201的输入端14，所述写入开关2011的第二端配置为所述写入模块201的输出端16，所述写入开关2011的控制端20可以电性连接扫描电压模块203，所述扫描电压模块203用于控制所述写入开关2011是否开启；所述存储模块202可以包括存储电容2021，所述存储电容2021的第一端配置为所述存储模块202的第一端15，所述存储电容2021的第二端配置为所述存储模块202的第二端17，所述存储电容2021用于存储所述数据信号。具体的，当所述扫描电压模块203控制所述写入开关2011开启时，所述数据信号模块109通过所述写入开关2011向所述存储电容2021和所述驱动薄膜晶体管1021写入所述数据信号。\n\n[0069]在一实施例中，如图1所示，所述像素电路100还包括预存模块204，所述预存模块204的输入端18和所述写入模块201的输出端16电性连接，所述预存模块204的输出端19和所述存储模块202的第一端15电性连接，所述预存模块204用于存储所述数据信号模块109提供的数据信号。可以理解的，所述预存模块204将所述写入模块201和所述存储模块202电性连接，可以先缓存所述数据信号以在合适的时候向所述存储模块202写入所述数据信号。\n\n[0070]在一实施例中，如图2所示，所述预存模块204包括：预存电容2041，所述预存电容2041的第一端配置为所述预存模块201的输入端18，所述预存电容2041的第二端接地，所述预存电容2041用于存储所述数据信号；预存开关2042，所述预存开关2042的第一端和所述预存电容2041的第一端电性连接，所述预存开关2042的第二端配置为所述预存模块204的输出端19，所述预存开关2042用于控制所述驱动模块102的第一控制端02是否加载为所述数据信号。可以理解的，当所述扫描电压模块203控制所述写入开关2011开启时，所述数据信号通过所述写入开关2011预存在所述预存电容2041上；当预存电压模块205控制所述预存开关2042开启时，所述数据信号通过所述预存开关2042写入所述存储电容2021和所述驱动薄膜晶体管1021。\n\n[0071]本申请实施例提供了驱动方法，所述驱动方法应用于上文任一所述像素电路，所述驱动方法包括但不限于以下实施例以及以下实施例的组合。\n\n[0072]在一实施例中，如图8所示，所述驱动方法包括但不限于以下步骤。\n\n[0073]S10，在所述第二时段向所述驱动模块的第一控制端加载所述第二信号。\n\n[0074]在一实施例中，如图1所示，所述像素电路100还包括第二信号模块105，所述第二信号模块105电性连接所述驱动模块102的第一控制端02，用于使所述驱动模块102的第一控制端02在所述第二时段加载为所述第二信号，所述第二信号的极性为正。\n\n[0075]在一实施例中，如图2所示，所述第二信号模块105包括第二信号源1051和第二开关1052，所述第二开关1052在所述第二时段开启以使所述第二信号源1051向所述驱动模块102的第一控制端02加载所述第二信号。具体的，所述第二开关1052的控制端06可以电性连接第二控制信号模块107，所述第二控制信号模块107可以输出呈周期性的第二脉冲信号，所述第二脉冲信号的脉宽可以等于所述第二时段，所述第二信号源1042输出所述第二信号，所述第二信号具体可以为一恒定的、且极性为正的电压信号；即当所述第二开关1052的控制端06被加载的信号处于所述第二脉冲信号的高电压期间，所述第二开关1052开启，所述第二信号通过所述第二开关1052加载在所述驱动模块102的第一控制端02。\n\n[0076]S20，驱动所述驱动模块以控制所述发光模块发光。\n\n[0077]其中，如图1所示，所述像素电路00还包括电源模块103，所述发光模块101的电源端03和所述电源模块103电性连接，所述发光模块101的工作端04和所述驱动模块102的第一端01电性连接，所述电源模块103输出的工作电压一定时，所述驱动模块102可以控制所述发光模块101的发光情况。具体的，如图2所示，所述发光模块101可以包括微发光二极管1011，所述微发光二极管1011的阳极端可以配置为所述发光模块101的电源端03，所述微发光二极管1011的阴极端可以配置为所述发光模块101的工作端04，所述电源模块103输出的信号可以为一恒定高电压信号，且恒定高电压信号大于所述驱动模块102的第一端01的电压，使得所述微发光二极管1011发光。\n\n[0078]S30，在所述第一时段向所述驱动模块的第一控制端加载所述第一信号。\n\n[0079]在一实施例中，如图1所示，所述像素电路100还包括第一信号模块104，所述第一信号模块104电性连接所述驱动模块102的第一控制端，用于使所述驱动模块102的第一控制端02在所述第一时段加载为所述第一信号，所述第一信号的极性为负。\n\n[0080]在一实施例中，如图2所示，所述第一信号模块104包括第一信号源1041和第一开关1042，所述第一开关1042在所述第一时段开启以使所述第一信号源1041向所述驱动模块102的第一控制端02加载所述第一信号。具体的，所述第一开关1042的控制端05可以电性连接第一控制信号模块106，所述第一控制信号模块106可以输出呈周期性的第一脉冲信号，所述第一脉冲信号的脉宽可以等于所述第一时段，所述第一信号源1041输出所述第一信号，所述第一信号具体可以为一恒定的、且极性为负的电压信号；即当所述第一开关1042的控制端05被加载的所述第一脉冲信号处于所述第一脉冲信号的高电压期间，所述第一开关1042开启，所述第一信号通过所述第一开关1042加载在所述驱动模块102的第一控制端02。\n\n[0081]可以理解的，由于所述第一信号模块104使所述驱动模块102的第一控制端02在所述第一时段加载为极性为负的所述第一信号，所述第二信号模块105使所述驱动模块102的第一控制端02在所述第二时段加载为极性为正的所述第二信号，可以理解的，所述驱动模块102的工作时长的一个周期中可以包括所述第一时段和所述第二时段，那么在所述驱动模块102的工作时长中，所述驱动模块102的第一控制端02可以交替地被加载极性不同的两种电压；进一步的，可以减缓所述驱动模块102的阈值电压的偏移，以稳定所述发光模块101的驱动电流，以提高显示面板显示的均匀性，并且降低了显示面板的寿命。\n\n[0082]在一实施例中，图9为如图2所示的电路图对应的时序图，具体的，EVDD可以为所述电源模块103输出的电信号，VSS可以为加载在所述存储电容的第二端和所述驱动薄膜晶体管的源极上的信号，Sense可以为加载在所述第一开关1042的控制端05上的信号，Vref 1可以为所述第一信号源1041输出的信号，Merge可以为所述预存电压模块205输出的信号，Scan可以为所述扫描电压模块203输出的信号，Change可以为加载在所述第二开关1052的控制端06上的信号，Vref 2可以为所述第二信号源1051输出的信号，此处以所述第一开关1042和所述第二开关1052均为N型薄膜晶体管为例进行说明，即所述第一开关1042的控制端05和所述第二开关1052的控制端06分别为对应的N型薄膜晶体管的栅极。\n\n[0083]在一实施例中，结合如图9所示的时序图和如图2所示的电路图，所述驱动方法包括但不限于如图10所示的步骤。\n\n[0084]S101，在初始化阶段，控制所述电源模块向所述OLED器件的的阳极端输入低电压，控制变压模块向所述驱动薄膜晶体管的源极和所述存储模块电容的第二端输入高电压，控制第二信号控制模块向所述第二开关的栅极和所述补偿薄膜晶体管的栅极输入高电压，控制所述第二信号源输出高电压。\n\n[0085]可以理解的，如图2、9所示，在所述初始化阶段t1，由于所述Sense为高电压，即所述第二控制信号模块107输出高电压，所述第二开关1052开启，且所述Vref 1为高电压，即所述第二信号源1051输出高电压，所述驱动薄膜晶体管1021开启，且所述电源模块103输出的所述EVDD为低电压，所述变压模块206所述VSS为高电压，即所述微发光二极管1011的的阳极端电压低于所述OLED器件的的阴极端电压，即所述微发光二极管1011未导通，故所述微发光二极管1011处于熄灭状态；同时，如图2所示，所述补偿薄膜晶体管1082的栅极11也电性连接所述第二控制信号模块107，即所述补偿薄膜晶体管1082也开启，即所述驱动薄膜晶体管1021的底栅和漏极导通，故所述VSS经过所述驱动薄膜晶体管1021和所述补偿薄膜晶体管1082传输至所述驱动薄膜晶体管1021的底栅和所述补偿电容1081的第一端10，使得所述驱动薄膜晶体管1021的底栅的电压升高，进一步调节所述驱动薄膜晶体管1021的阈值电压为负值。\n\n[0086]S102，在补偿阶段，维持所述电源模块向所述OLED器件的的阳极端输入低电压，控制所述变压模块向所述驱动薄膜晶体管的源极和所述存储模块电容的第二端输入低电压，控制第二控制模块向所述第二开关的栅极和所述补偿薄膜晶体管的栅极输入高电压，控制所述第二信号源输出低电压。\n\n[0087]可以理解的，如图2、9所示，在所述补偿阶段t2，由于所述Sense为高电压，同理，所述第二开关1052开启，且所述Vref 1为低电压，结合所述驱动薄膜晶体管1021的阈值电压为负值，此时所述驱动薄膜晶体管1021的顶栅的电压仍然高于所述驱动薄膜晶体管1021的阈值电压，即所述驱动薄膜晶体管1021仍然开启；且所述EVDD为低电压，所述VSS为低电压，同理，所述微发光二极管1011处于熄灭状态；同时，所述驱动薄膜晶体管1021的底栅的电压依次通过所述补偿薄膜晶体管1082和所述驱动薄膜晶体管1021放电至所述变压模块206，使得所述驱动薄膜晶体管1021的底栅的电压降低，以至于所述驱动薄膜晶体管1021的阈值电压上升，直至所述驱动薄膜晶体管1021的阈值电压等于所述驱动薄膜晶体管1021的顶栅的电压也即所述Vref 1此时的电压时，所述驱动薄膜晶体管1021截至，所述补偿电容1081存储所述驱动薄膜晶体管1021的底栅的电压。\n\n[0088]S103，在写入阶段，控制所述预存电压模块向所述预存开关输入高电压。\n\n[0089]可以理解的，如图2、9所示，在所述写入阶段t3，所述Merge为高电压，此时上一帧预存在所述预存电容2041中的所述数据信号可以通过所述预存开关2042写入所述存储电容2021中。\n\n[0090]S104，在发光阶段，控制所述电源模块向所述OLED器件的的阳极端输入高电压，控制所述预存电压模块向所述预存开关输入低电压，以及控制所述扫描电压模块向所述写入开关的控制端输入高电压。\n\n[0091]可以理解的，如图2、9所示，在所述发光阶段t4，所述微发光二极管1011的的阳极端的电压为高电压，故所述微发光二极管1011发光，其中流经所述微发光二极管1011的电流为所述μ为所述驱动薄膜晶体管1021的载流子迁移率，所述Cox为单位面积电容，所述(W/L)为所述驱动薄膜晶体管1021的宽长比，所述α为所述数据信号传输到所述驱动薄膜晶体管1021的栅极的效率，所述Vdata为所述数据信号的电压值，所述Vref为所述所述第一信号源1041输出的信号处于高电压的电压值；同时，所述写入开关2011开启，本帧的所述数据信号模块109通过所述写入开关2011预存于所述预存电容2041中。\n\n[0092]S105，在反转阶段，控制第一控制模块向所述第一开关的栅极输入高电压，控制所述第一信号源输出低电压。\n\n[0093]可以理解的，如图2、9所示，在所述反转阶段t5，由于所述Change为高电压，即所述第一控制信号模块106输出高电压，所述第一开关1042开启，且所述Vref 2为低电压，即所述第一信号源1041输出低电压，所述驱动薄膜晶体管1021的栅极和源极之间的电压差为负值，与之前相反；具体的，所述反转阶段t5可以占每帧的周期的一半，例如每帧的周期，即t1至t5之和为16.7毫秒，则所述反转阶段t5可以为8.3毫秒。进一步的，所述反转阶段也可以理解为对所述像素电路100对应的像素单元进行插黑处理，即本实施例还可以实现对于所述像素电路100对应的像素单元进行插黑处理，以减弱拖影现象。\n\n[0094]需要注意的是，当采用SiNx:H制作所述驱动薄膜晶体管1021的有源层时，正偏应力主要引起a-Si:H中De态密度增加，负偏应力主要引起De态密度的减少；当采用SiO2制作所述驱动薄膜晶体管1021的有源层时，阈值电压的漂移是在正偏压下a-Si:H中De态的产生和在负偏压下Dh态的产生造成；当采用(SiNx:H)/SiO2复合层制作所述驱动薄膜晶体管1021的有源层时，阈值电压的漂移是在正偏压下a-Si:H中De态增加同时Dh态减少和在负偏压下De态减少同时Dh态增加造成。\n\n[0095]可以理解的，本实施例中通过交替向所述驱动薄膜晶体管1021的栅极输入极性相反的两个电压信号，使得所述驱动薄膜晶体管1021的栅极和源极之间的电压差交替呈现为正值和负值，根据上述分析可知，本实施例可以使a-Si:H中态的产生是个动态平衡过程，即正偏应力下主要引起所述驱动薄膜晶体管1021中的有源层非晶硅中的De态密度增加和Dh态密度减少，而负偏应力主要引起De态密度的减少和Dh态密度的增加，且正偏应力和负偏应力交替进行，使所述驱动薄膜晶体管1021的阈值电压的漂移保持了一个动态平衡来实现输出电流的稳定。\n\n[0096]本申请实施例还提供了显示面板，所述显示面板包括如上文任一项所述的像素电路。\n\n[0097]本申请实施例还提供了显示装置，所述显示装置包括如上文所述的显示面板。\n\n[0098]本申请提供了像素电路及其驱动方法、显示面板和显示装置，所述像素电路包括发光模块和驱动模块，通过将所述驱动模块的第一端和所述发光模块电性连接，所述驱动模块的第一控制端在第一时段用于加载第一信号，所述驱动模块的第一控制端在第二时段用于加载第二信号，所述第一信号和所述第二信号极性相反，所述第一时段和所述第二时段无交集，以实现所述驱动模块的第一控制端在所述第一时段和所述第二时段交替地被加载为极性相反的所述第一信号和所述第二信号；因此，本方案中将所述驱动模块的第一控制端交替地被设置为极性相反的两种信号，以此减缓所述驱动模块的阈值电压的偏移，以稳定所述发光模块的驱动电流，以提高显示面板显示的均匀性，并且降低了显示面板的寿命。');
INSERT INTO `os_patent_instruction_text` VALUES (10911, 23965, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种显示面板及显示装置。\n\n背景技术\n\n[0002]Micro-LED(Micro Light-Emitting Diode,微型发光二极管)技术，即LED微缩化和矩阵化技术，指的是在一个芯片上集成的高密度微小尺寸的LED阵列。相较目前应用的液晶显示器件以及OLED(OrganicLight-Emitting Diode，有机电致发光二极管)显示器件相比，具有反应快、高色域、高PPI、低能耗等优势，成为未来显示技术的研究热点之一。\n\n[0003]但是，Micro-LED发光单元为点光源，其发光具有点光源特征，在使用中其大部分光无法被利用，降低了Micro-LED显示装置的发光效率。同时，在制造Micro-LED发光单元的过程中，首先在施主晶圆上形成Micro-LED发光单元，接着将Micro-LED发光单元转移到接受衬底上，接受衬底例如是显示屏；而由于需要把巨量的Micro-LED发光单元从母版转移到目标显示基板，因此，此项精确转移被认为是目前Micro-LED发光单元主要的制作瓶颈之一，导致使用这种方法转移Micro-LED发光单元的效率和良率均有较大的问题，大大降低微发光二极管显示面板的良率。\n\n[0004]因此，如何改善现有显示面板及显示装置，由于微发光二极管的发光效率低且转移成功率低的技术问题，是本领域技术人员目前亟待解决的技术问题。\n\n发明内容\n\n[0005]本申请实施例提供一种显示面板及显示装置，可以在提高微发光二极管转移成功率的同时，进一步提高微发光二极管的发光效率。\n\n[0006]本申请实施例提供一种显示面板，包括：包括阵列基板的反射层以及连接于所述阵列基板的微发光二极管；\n\n[0007]其中，所述反射层位于所述微发光二极管的侧部，用于将所述微发光二极管发出的光朝向所述显示面板的显示面进行反射。\n\n[0008]可选的，在本申请的一些实施例中，所述阵列基板还包括连接电极层，所述连接电极层包括阳极以及阴极，所述微发光二极管分别与所述阳极和所述阴极电性连接；所述反射层包括两第一反射部，两所述第一反射部设置于所述阳极以及所述阴极上，并电性连接于所述阳极和所述微发光二极管，以及所述阴极和所述微发光二极管。\n\n[0009]可选的，在本申请的一些实施例中，所述微发光二极管包括本体和连接于所述本体下方的两个引脚，两所述引脚分别电连接所述阳极和和两所述第一反射部中的一个，以及所述阴极和两所述第一反射部中的另一个，所述显示面位于所述本体的背离所述引脚的一侧。\n\n[0010]可选的，在本申请的一些实施例中，所述阵列基板设有开口结构，所述开口结构暴露所述阴极和所述阳极，所述微发光二极管位于所述开口结构内，所述反射层包括两第二反射部，每一所述第二反射部连接于对应的所述第一反射部并位于所述开口结构的侧壁上。\n\n[0011]可选的，在本申请的一些实施例中，每一所述第一反射部与对应的所述第二反射部之间的夹角大于90°。\n\n[0012]可选的，在本申请的一些实施例中，所述反射层包括ITO/Ag/ITO导电层、Al金属层以及Mg金属层中的任意一种。\n\n[0013]可选的，在本申请的一些实施例中，所述阵列基板包括薄膜晶体管阵列层，所述薄膜晶体管阵列层还包括栅极、位于所述栅极上的栅极绝缘层、位于所述栅极绝缘层上的层间绝缘层、位于所述层间绝缘层上的源极金属层以及漏极金属层，所述漏极金属层电连接所述阳极。\n\n[0014]可选的，在本申请的一些实施例中，所述阳极位于所述栅极绝缘层和所述层间绝缘层之间。\n\n[0015]可选的，在本申请的一些实施例中，所述薄膜晶体管阵列层还包括位于所述层间绝缘层上的平坦化层，所述开口结构设于所述平坦化层和所述层间绝缘层。\n\n[0016]相应的，本申请实施例还提供一种显示装置，包括上述任一项所述的显示面板。\n\n[0017]本申请实施例提供的显示面板及显示装置，在阵列基板上需要绑定微发光二极管的区域挖孔形成开口区域，且在开口区域增设反射层，在提高微发光二极管转移成功率的同时，进一步提高微发光二极管的发光效率。\n\n附图说明\n\n[0018]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1是本申请实施例提供的显示面板的截面示意图；\n\n[0020]图2是本申请实施例提供的显示面板中微发光二极管的出射光路径示意图。\n\n具体实施方式\n\n[0021]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0022]本申请实施例提供一种触控显示面板及触控显示装置。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。另外，在本申请的描述中，术语“包括”是指“包括但不限于”。用语第一、第二、第三等仅仅作为标示使用，并没有强加数字要求或建立顺序。本发明的各种实施例可以以一个范围的型式存在；应当理解，以一范围型式的描述仅仅是因为方便及简洁，不应理解为对本发明范围的硬性限制；因此，应当认为所述的范围描述已经具体公开所有可能的子范围以及该范围内的单一数值。例如，应当认为从1到6的范围描述已经具体公开子范围，例如从1到3，从1到4，从1到5，从2到4，从2到6，从3到6等，以及所数范围内的单一数字，例如1、2、3、4、5及6，此不管范围为何皆适用。另外，每当在本文中指出数值范围，是指包括所指范围内的任何引用的数字(分数或整数)。\n\n[0023]本申请实施例针对现有显示面板及显示装置，由微发光二极管的发光效率低且转移成功率低的技术问题，本申请实施例能够解决上述技术问题。\n\n[0024]如图1所示，是本申请实施例提供的显示面板的截面示意图；其中，所述显示面板包括：阵列基板、连接电极层以及微发光二极管50，所述阵列基板包括衬底基板10、设置于所述衬底基板10上的薄膜晶体管阵列层20以及连接电极层，所述薄膜晶体管阵列层20具有开口结构281；所述连接电极层设置于所述薄膜晶体管阵列层20的栅极绝缘层25上，所述开口结构281暴露出部分所述连接电极层；所述微发光二极管50设置于所述开口结构281内，所述微发光二极管50经由所述连接电极层连接至所述薄膜晶体管阵列层20；\n\n[0025]其中，所述开口结构内还设置有反射层40，所述反射层40包括两第一反射部41以及与所述第一反射部41连接的两第二反射部42，所述第一反射部41设置于所述连接电极层上。\n\n[0026]可选的，在本申请的一些实施例中，所述反射层40包括两第二反射部42，每一所述第二反射部42连接于对应的所述第一反射部41并位于所述开口结构281的侧壁上，所述反射层40用于将所述微发光二极管50发出的光朝向所述显示面板的显示面进行反射。\n\n[0027]可选的，在本申请的一些实施例中，所述微发光二极管50包括Micro-LED发光单元以及Mini-LED发光单元。\n\n[0028]可选的，在本申请的一些实施例中，所述连接电极层包括同层且间隔设置于所述栅极绝缘层25上的阳极31以及阴极32，所述微发光二极管50分别与所述阳极31和所述阴极32电性连接；两所述第一反射部41设置于所述阳极31以及所述阴极32上，并电性连接于所述阳极31和所述微发光二极管50，以及所述阴极32和所述微发光二极管50。\n\n[0029]可选的，在本申请的一些实施例中，所述微发光二极管50包括本体和连接于所述本体下方的两个引脚，两所述引脚分别电连接所述阳极31和两所述第一反射部41中的一个，以及所述阴极32和两所述第一反射部41中的另一个，所述显示面位于所述本体的背离所述引脚的一侧。\n\n[0030]具体地，所述连接电极层包括同层且间隔设置于所述栅极绝缘层25上的阳极31以及阴极32，所述阳极31以及所述阴极32分别与所述第一反射部41电连接。\n\n[0031]可选的，在本申请的一些实施例中，所述第一反射部41与所述微发光二极管发光单元50电连接。\n\n[0032]可选的，在本申请的一些实施例中，所述反射层40为三层ITO/Ag/ITO导电层、Al金属层以及Mg金属层中的任意一种。\n\n[0033]可选的，在本申请的一些实施例中，每一所述第一反射部41与对应的所述第二反射部42之间的夹角大于90°。\n\n[0034]由于所述微发光二极管发光单元50为点光源，其发光具有点光源特征。所述反射层40的上述设置能够有效提高所述微发光二极管发光单元50的出光效率。\n\n[0035]可选的，在本申请的一些实施例中，所述薄膜晶体管阵列层20还包括：\n\n[0036]缓冲层21，设置于所述衬底基板10上；\n\n[0037]有源层22，设置于所述缓冲层21上；\n\n[0038]第一绝缘层23，设置于所述缓冲层21上并完全覆盖所述有源层22；\n\n[0039]栅极金属层24，设置于所述第一绝缘层23上，所述栅极金属层24与所述有源层22相对设置；\n\n[0040]所述栅极绝缘层25，设置于所述第一绝缘层23上并完全覆盖所述栅极金属层24；\n\n[0041]层间绝缘层26，设置于所述栅极绝缘层25上并部分覆盖所述连接电极层；\n\n[0042]源极金属层271以及漏极金属层272，同层设置于所述层间绝缘层26上；\n\n[0043]平坦化层28，设置于所述层间绝缘层26上并完全覆盖所述源极金属层271以及所述漏极金属层272；\n\n[0044]其中，所述层间绝缘层26以及所述平坦化层28形成所述开口结构281并暴露出部分所述层间绝缘层26、部分所述阳极金属层31以及部分所述阴极金属层32。\n\n[0045]可选的，在本申请的一些实施例中，所述第二反射部42远离所述第一反射部41的一端与所述平坦化层28的顶部平齐。\n\n[0046]可选的，在本申请的一些实施例中，所述源极金属层271以及所述漏极金属层272分别经由第一过孔261以及第二过孔262与所述有源层22电连接，所述漏极金属层272还经由第三过孔263与所述阳极金属层31电连接。\n\n[0047]具体地，所述薄膜晶体管阵列层20作为所述显示面板的驱动薄膜晶体管；通过增加所述薄膜晶体管阵列层20中的所述栅极金属层24与所述源极金属层271/所述漏极金属层272之间绝缘层的距离(包括所述栅极绝缘层25以及所述层间绝缘层26)，减小了寄生电容，提高电路信号的稳定性。\n\n[0048]可选的，在本申请的一些实施例中，所述显示面板的制备方法如下：\n\n[0049]首先，在衬底基板10表面沉积缓冲层21，所述衬底基板10可以为玻璃或柔性基板，所述柔性基板的材料优选为聚酰亚胺(PI)或者聚对苯二甲酸乙二醇酯(PET)；所述缓冲层21可以为氮化硅(SiNx)或氧化硅(SiO2)的一层或多层结构。\n\n[0050]其次，在所述缓冲层21上面沉积图案化的所述有源层22，所述有源层22的材料优选为低温多晶硅。\n\n[0051]之后，在所述有源层22的上表面沉积第一绝缘层23，所述第一绝缘层13的材料包含氮化硅材料或氧化硅材料的一层或多层结构。\n\n[0052]然后，在所述第一绝缘层23上沉积栅极金属层24，所述栅极金属层24的材料优选为金属铜，所述栅极金属层24与所述有源层22相对设置。\n\n[0053]之后，在所述栅极金属层24上面沉积栅极绝缘层25，所述栅极绝缘层25的材料包含氮化硅材料或氧化硅材料的一层或多层结构。\n\n[0054]再之后，在所述栅极绝缘层25上沉积阳极31以及阴极32；其中，所述阴极32与所述阳极31构成连接电极层，且所述阴极32与所述阳极31间隔设置。\n\n[0055]可选的，在本申请的一些实施例中，所述阴极32与所述阳极31可以为相同或不相同的金属材料，所述阴极32还通过其他过孔连接到外电路。\n\n[0056]可选的，在本申请的一些实施例中，所述阳极31的制成材料为透明导电金属(ITO)。\n\n[0057]之后，在所述栅极绝缘层25上沉积层间绝缘层26，所述层间绝缘层26完全覆盖所述阴极32与所述阳极31。所述层间绝缘层26的材料包含氮化硅材料或氧化硅材料的一层或多层结构。\n\n[0058]然后，在所述层间绝缘层26上沉积一层金属层，形成所述源极金属层271以及所述漏极金属层272；并在所述层间绝缘层26上分别制备第一过孔261、第二过孔262以及第三过孔263，使得所述源极金属层271以及所述漏极金属层272分别经由所述第一过孔261以及所述第二过孔262与所述有源层22电连接，所述漏极金属层272还经由所述第三过孔263与所述阳极31电连接。\n\n[0059]可选的，在本申请的一些实施例中，所述第一过孔261、所述第二过孔262和所述第三过孔263可采用半掩膜工艺在同一道制程中制成，从而减少生产工序，降低成本。\n\n[0060]之后，在所述层间绝缘层26上沉积平坦化层28，所述平坦化层28材料包含氮化硅材料或氧化硅材料的一层或多层结构。\n\n[0061]然后，在所述平坦化层28上绑定所述微发光二极管50的区域挖孔，形成所述开孔结构281，所述开孔结构281暴露出部分所述阳极31、部分所述阴极32以及部分所述层间绝缘层26。\n\n[0062]之后，在所述开口结构281内的部分所述阳极31、部分所述阴极32以及所述开口结构281的侧壁上沉积反射层40；所述反射层40包括第一反射部41以及与所述第一反射部41连接的第二反射部42，所述第一反射部41设置于所述阳极31以及所述阴极32上，所述第二反射部42设置于所述开口结构281的侧壁上。\n\n[0063]可选的，在本申请的一些实施例中，所述第一反射部41与所述第二反射部42一体成型。\n\n[0064]可选的，在本申请的一些实施例中，所述第一反射部41与所述第二反射部42之间的夹角大于90°；所述第二反射部42远离所述第一反射部41的一端与所述平坦化层28的顶部平齐；所述反射层40为三层ITO/Ag/ITO导电层、Al金属层以及Mg金属层中的任意一种。\n\n[0065]最后，在所述开口结构281内绑定转移过来的微发光二极管50，所述微发光二极管50分别与所述阳极31、所述阴极32以及所述第一反射部41电连接。由于所述微发光二极管50为点光源，其发光具有点光源特征。所述反射层40的上述设置能够有效提高所述微发光二极管50的出光效率。\n\n[0066]可选的，在本申请的一些实施例中，所述微发光二极管50包括本体和连接于所述本体下方的两个引脚，所述引脚分别电连接所述阳极31和所述阴极32，所述显示面位于所述本体的背离所述引脚的一侧。\n\n[0067]如图2所示，是本申请实施例提供的显示面板中微发光二极管的出射光路径示意图。其中，由于所述反射层40的设置，所述微发光二极管50的出射光均沿着第一方向D发射，进而提高了所述微发光二极管50的出光率。\n\n[0068]本申请实施例的显示面板相对于现有技术，具有以下优点：\n\n[0069]第一方面，通过改变驱动薄膜晶体管的制程和结构，增加了低温多晶硅型驱动薄膜晶体管的栅极金属层(Gate)和源极金属层(Source)/漏极金属层(Drain)之间绝缘层的距离，减小了寄生电容。\n\n[0070]第二方面，阵列基板上需要在绑定微发光二极管的区域挖孔，有利于提高微发光二极管转移成功率。\n\n[0071]第三方面，在微发光二极管与阵列基板绑定的挖孔区域增加反射层，有利于提高微发光二极管出光率。\n\n[0072]本申请实施例还提供了一种显示装置，所述显示装置包括上述实施例所述的显示面板。\n\n[0073]其中，所述显示装置可以为手机、电脑、电视机和智能穿戴显示设备等，本实施例对此不作特殊限定。\n\n[0074]综上所述，本申请实施例提供的显示面板及显示装置，在阵列基板上需要绑定微发光二极管的区域挖孔形成开口区域，且在开口区域增设反射层，在提高微发光二极管转移成功率的同时，进一步提高微发光二极管发光单元的发光效率。\n\n[0075]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0076]以上对本申请实施例所提供的一种显示面板及显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种显示面板及显示装置。\n\n背景技术\n\n[0002]Micro-LED(Micro Light-Emitting Diode,微型发光二极管)技术，即LED微缩化和矩阵化技术，指的是在一个芯片上集成的高密度微小尺寸的LED阵列。相较目前应用的液晶显示器件以及OLED(OrganicLight-Emitting Diode，有机电致发光二极管)显示器件相比，具有反应快、高色域、高PPI、低能耗等优势，成为未来显示技术的研究热点之一。\n\n[0003]但是，Micro-LED发光单元为点光源，其发光具有点光源特征，在使用中其大部分光无法被利用，降低了Micro-LED显示装置的发光效率。同时，在制造Micro-LED发光单元的过程中，首先在施主晶圆上形成Micro-LED发光单元，接着将Micro-LED发光单元转移到接受衬底上，接受衬底例如是显示屏；而由于需要把巨量的Micro-LED发光单元从母版转移到目标显示基板，因此，此项精确转移被认为是目前Micro-LED发光单元主要的制作瓶颈之一，导致使用这种方法转移Micro-LED发光单元的效率和良率均有较大的问题，大大降低微发光二极管显示面板的良率。\n\n[0004]因此，如何改善现有显示面板及显示装置，由于微发光二极管的发光效率低且转移成功率低的技术问题，是本领域技术人员目前亟待解决的技术问题。\n\n发明内容\n\n[0005]本申请实施例提供一种显示面板及显示装置，可以在提高微发光二极管转移成功率的同时，进一步提高微发光二极管的发光效率。\n\n[0006]本申请实施例提供一种显示面板，包括：包括阵列基板的反射层以及连接于所述阵列基板的微发光二极管；\n\n[0007]其中，所述反射层位于所述微发光二极管的侧部，用于将所述微发光二极管发出的光朝向所述显示面板的显示面进行反射。\n\n[0008]可选的，在本申请的一些实施例中，所述阵列基板还包括连接电极层，所述连接电极层包括阳极以及阴极，所述微发光二极管分别与所述阳极和所述阴极电性连接；所述反射层包括两第一反射部，两所述第一反射部设置于所述阳极以及所述阴极上，并电性连接于所述阳极和所述微发光二极管，以及所述阴极和所述微发光二极管。\n\n[0009]可选的，在本申请的一些实施例中，所述微发光二极管包括本体和连接于所述本体下方的两个引脚，两所述引脚分别电连接所述阳极和和两所述第一反射部中的一个，以及所述阴极和两所述第一反射部中的另一个，所述显示面位于所述本体的背离所述引脚的一侧。\n\n[0010]可选的，在本申请的一些实施例中，所述阵列基板设有开口结构，所述开口结构暴露所述阴极和所述阳极，所述微发光二极管位于所述开口结构内，所述反射层包括两第二反射部，每一所述第二反射部连接于对应的所述第一反射部并位于所述开口结构的侧壁上。\n\n[0011]可选的，在本申请的一些实施例中，每一所述第一反射部与对应的所述第二反射部之间的夹角大于90°。\n\n[0012]可选的，在本申请的一些实施例中，所述反射层包括ITO/Ag/ITO导电层、Al金属层以及Mg金属层中的任意一种。\n\n[0013]可选的，在本申请的一些实施例中，所述阵列基板包括薄膜晶体管阵列层，所述薄膜晶体管阵列层还包括栅极、位于所述栅极上的栅极绝缘层、位于所述栅极绝缘层上的层间绝缘层、位于所述层间绝缘层上的源极金属层以及漏极金属层，所述漏极金属层电连接所述阳极。\n\n[0014]可选的，在本申请的一些实施例中，所述阳极位于所述栅极绝缘层和所述层间绝缘层之间。\n\n[0015]可选的，在本申请的一些实施例中，所述薄膜晶体管阵列层还包括位于所述层间绝缘层上的平坦化层，所述开口结构设于所述平坦化层和所述层间绝缘层。\n\n[0016]相应的，本申请实施例还提供一种显示装置，包括上述任一项所述的显示面板。\n\n[0017]本申请实施例提供的显示面板及显示装置，在阵列基板上需要绑定微发光二极管的区域挖孔形成开口区域，且在开口区域增设反射层，在提高微发光二极管转移成功率的同时，进一步提高微发光二极管的发光效率。\n\n附图说明\n\n[0018]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1是本申请实施例提供的显示面板的截面示意图；\n\n[0020]图2是本申请实施例提供的显示面板中微发光二极管的出射光路径示意图。\n\n具体实施方式\n\n[0021]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0022]本申请实施例提供一种触控显示面板及触控显示装置。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。另外，在本申请的描述中，术语“包括”是指“包括但不限于”。用语第一、第二、第三等仅仅作为标示使用，并没有强加数字要求或建立顺序。本发明的各种实施例可以以一个范围的型式存在；应当理解，以一范围型式的描述仅仅是因为方便及简洁，不应理解为对本发明范围的硬性限制；因此，应当认为所述的范围描述已经具体公开所有可能的子范围以及该范围内的单一数值。例如，应当认为从1到6的范围描述已经具体公开子范围，例如从1到3，从1到4，从1到5，从2到4，从2到6，从3到6等，以及所数范围内的单一数字，例如1、2、3、4、5及6，此不管范围为何皆适用。另外，每当在本文中指出数值范围，是指包括所指范围内的任何引用的数字(分数或整数)。\n\n[0023]本申请实施例针对现有显示面板及显示装置，由微发光二极管的发光效率低且转移成功率低的技术问题，本申请实施例能够解决上述技术问题。\n\n[0024]如图1所示，是本申请实施例提供的显示面板的截面示意图；其中，所述显示面板包括：阵列基板、连接电极层以及微发光二极管50，所述阵列基板包括衬底基板10、设置于所述衬底基板10上的薄膜晶体管阵列层20以及连接电极层，所述薄膜晶体管阵列层20具有开口结构281；所述连接电极层设置于所述薄膜晶体管阵列层20的栅极绝缘层25上，所述开口结构281暴露出部分所述连接电极层；所述微发光二极管50设置于所述开口结构281内，所述微发光二极管50经由所述连接电极层连接至所述薄膜晶体管阵列层20；\n\n[0025]其中，所述开口结构内还设置有反射层40，所述反射层40包括两第一反射部41以及与所述第一反射部41连接的两第二反射部42，所述第一反射部41设置于所述连接电极层上。\n\n[0026]可选的，在本申请的一些实施例中，所述反射层40包括两第二反射部42，每一所述第二反射部42连接于对应的所述第一反射部41并位于所述开口结构281的侧壁上，所述反射层40用于将所述微发光二极管50发出的光朝向所述显示面板的显示面进行反射。\n\n[0027]可选的，在本申请的一些实施例中，所述微发光二极管50包括Micro-LED发光单元以及Mini-LED发光单元。\n\n[0028]可选的，在本申请的一些实施例中，所述连接电极层包括同层且间隔设置于所述栅极绝缘层25上的阳极31以及阴极32，所述微发光二极管50分别与所述阳极31和所述阴极32电性连接；两所述第一反射部41设置于所述阳极31以及所述阴极32上，并电性连接于所述阳极31和所述微发光二极管50，以及所述阴极32和所述微发光二极管50。\n\n[0029]可选的，在本申请的一些实施例中，所述微发光二极管50包括本体和连接于所述本体下方的两个引脚，两所述引脚分别电连接所述阳极31和两所述第一反射部41中的一个，以及所述阴极32和两所述第一反射部41中的另一个，所述显示面位于所述本体的背离所述引脚的一侧。\n\n[0030]具体地，所述连接电极层包括同层且间隔设置于所述栅极绝缘层25上的阳极31以及阴极32，所述阳极31以及所述阴极32分别与所述第一反射部41电连接。\n\n[0031]可选的，在本申请的一些实施例中，所述第一反射部41与所述微发光二极管发光单元50电连接。\n\n[0032]可选的，在本申请的一些实施例中，所述反射层40为三层ITO/Ag/ITO导电层、Al金属层以及Mg金属层中的任意一种。\n\n[0033]可选的，在本申请的一些实施例中，每一所述第一反射部41与对应的所述第二反射部42之间的夹角大于90°。\n\n[0034]由于所述微发光二极管发光单元50为点光源，其发光具有点光源特征。所述反射层40的上述设置能够有效提高所述微发光二极管发光单元50的出光效率。\n\n[0035]可选的，在本申请的一些实施例中，所述薄膜晶体管阵列层20还包括：\n\n[0036]缓冲层21，设置于所述衬底基板10上；\n\n[0037]有源层22，设置于所述缓冲层21上；\n\n[0038]第一绝缘层23，设置于所述缓冲层21上并完全覆盖所述有源层22；\n\n[0039]栅极金属层24，设置于所述第一绝缘层23上，所述栅极金属层24与所述有源层22相对设置；\n\n[0040]所述栅极绝缘层25，设置于所述第一绝缘层23上并完全覆盖所述栅极金属层24；\n\n[0041]层间绝缘层26，设置于所述栅极绝缘层25上并部分覆盖所述连接电极层；\n\n[0042]源极金属层271以及漏极金属层272，同层设置于所述层间绝缘层26上；\n\n[0043]平坦化层28，设置于所述层间绝缘层26上并完全覆盖所述源极金属层271以及所述漏极金属层272；\n\n[0044]其中，所述层间绝缘层26以及所述平坦化层28形成所述开口结构281并暴露出部分所述层间绝缘层26、部分所述阳极金属层31以及部分所述阴极金属层32。\n\n[0045]可选的，在本申请的一些实施例中，所述第二反射部42远离所述第一反射部41的一端与所述平坦化层28的顶部平齐。\n\n[0046]可选的，在本申请的一些实施例中，所述源极金属层271以及所述漏极金属层272分别经由第一过孔261以及第二过孔262与所述有源层22电连接，所述漏极金属层272还经由第三过孔263与所述阳极金属层31电连接。\n\n[0047]具体地，所述薄膜晶体管阵列层20作为所述显示面板的驱动薄膜晶体管；通过增加所述薄膜晶体管阵列层20中的所述栅极金属层24与所述源极金属层271/所述漏极金属层272之间绝缘层的距离(包括所述栅极绝缘层25以及所述层间绝缘层26)，减小了寄生电容，提高电路信号的稳定性。\n\n[0048]可选的，在本申请的一些实施例中，所述显示面板的制备方法如下：\n\n[0049]首先，在衬底基板10表面沉积缓冲层21，所述衬底基板10可以为玻璃或柔性基板，所述柔性基板的材料优选为聚酰亚胺(PI)或者聚对苯二甲酸乙二醇酯(PET)；所述缓冲层21可以为氮化硅(SiNx)或氧化硅(SiO2)的一层或多层结构。\n\n[0050]其次，在所述缓冲层21上面沉积图案化的所述有源层22，所述有源层22的材料优选为低温多晶硅。\n\n[0051]之后，在所述有源层22的上表面沉积第一绝缘层23，所述第一绝缘层13的材料包含氮化硅材料或氧化硅材料的一层或多层结构。\n\n[0052]然后，在所述第一绝缘层23上沉积栅极金属层24，所述栅极金属层24的材料优选为金属铜，所述栅极金属层24与所述有源层22相对设置。\n\n[0053]之后，在所述栅极金属层24上面沉积栅极绝缘层25，所述栅极绝缘层25的材料包含氮化硅材料或氧化硅材料的一层或多层结构。\n\n[0054]再之后，在所述栅极绝缘层25上沉积阳极31以及阴极32；其中，所述阴极32与所述阳极31构成连接电极层，且所述阴极32与所述阳极31间隔设置。\n\n[0055]可选的，在本申请的一些实施例中，所述阴极32与所述阳极31可以为相同或不相同的金属材料，所述阴极32还通过其他过孔连接到外电路。\n\n[0056]可选的，在本申请的一些实施例中，所述阳极31的制成材料为透明导电金属(ITO)。\n\n[0057]之后，在所述栅极绝缘层25上沉积层间绝缘层26，所述层间绝缘层26完全覆盖所述阴极32与所述阳极31。所述层间绝缘层26的材料包含氮化硅材料或氧化硅材料的一层或多层结构。\n\n[0058]然后，在所述层间绝缘层26上沉积一层金属层，形成所述源极金属层271以及所述漏极金属层272；并在所述层间绝缘层26上分别制备第一过孔261、第二过孔262以及第三过孔263，使得所述源极金属层271以及所述漏极金属层272分别经由所述第一过孔261以及所述第二过孔262与所述有源层22电连接，所述漏极金属层272还经由所述第三过孔263与所述阳极31电连接。\n\n[0059]可选的，在本申请的一些实施例中，所述第一过孔261、所述第二过孔262和所述第三过孔263可采用半掩膜工艺在同一道制程中制成，从而减少生产工序，降低成本。\n\n[0060]之后，在所述层间绝缘层26上沉积平坦化层28，所述平坦化层28材料包含氮化硅材料或氧化硅材料的一层或多层结构。\n\n[0061]然后，在所述平坦化层28上绑定所述微发光二极管50的区域挖孔，形成所述开孔结构281，所述开孔结构281暴露出部分所述阳极31、部分所述阴极32以及部分所述层间绝缘层26。\n\n[0062]之后，在所述开口结构281内的部分所述阳极31、部分所述阴极32以及所述开口结构281的侧壁上沉积反射层40；所述反射层40包括第一反射部41以及与所述第一反射部41连接的第二反射部42，所述第一反射部41设置于所述阳极31以及所述阴极32上，所述第二反射部42设置于所述开口结构281的侧壁上。\n\n[0063]可选的，在本申请的一些实施例中，所述第一反射部41与所述第二反射部42一体成型。\n\n[0064]可选的，在本申请的一些实施例中，所述第一反射部41与所述第二反射部42之间的夹角大于90°；所述第二反射部42远离所述第一反射部41的一端与所述平坦化层28的顶部平齐；所述反射层40为三层ITO/Ag/ITO导电层、Al金属层以及Mg金属层中的任意一种。\n\n[0065]最后，在所述开口结构281内绑定转移过来的微发光二极管50，所述微发光二极管50分别与所述阳极31、所述阴极32以及所述第一反射部41电连接。由于所述微发光二极管50为点光源，其发光具有点光源特征。所述反射层40的上述设置能够有效提高所述微发光二极管50的出光效率。\n\n[0066]可选的，在本申请的一些实施例中，所述微发光二极管50包括本体和连接于所述本体下方的两个引脚，所述引脚分别电连接所述阳极31和所述阴极32，所述显示面位于所述本体的背离所述引脚的一侧。\n\n[0067]如图2所示，是本申请实施例提供的显示面板中微发光二极管的出射光路径示意图。其中，由于所述反射层40的设置，所述微发光二极管50的出射光均沿着第一方向D发射，进而提高了所述微发光二极管50的出光率。\n\n[0068]本申请实施例的显示面板相对于现有技术，具有以下优点：\n\n[0069]第一方面，通过改变驱动薄膜晶体管的制程和结构，增加了低温多晶硅型驱动薄膜晶体管的栅极金属层(Gate)和源极金属层(Source)/漏极金属层(Drain)之间绝缘层的距离，减小了寄生电容。\n\n[0070]第二方面，阵列基板上需要在绑定微发光二极管的区域挖孔，有利于提高微发光二极管转移成功率。\n\n[0071]第三方面，在微发光二极管与阵列基板绑定的挖孔区域增加反射层，有利于提高微发光二极管出光率。\n\n[0072]本申请实施例还提供了一种显示装置，所述显示装置包括上述实施例所述的显示面板。\n\n[0073]其中，所述显示装置可以为手机、电脑、电视机和智能穿戴显示设备等，本实施例对此不作特殊限定。\n\n[0074]综上所述，本申请实施例提供的显示面板及显示装置，在阵列基板上需要绑定微发光二极管的区域挖孔形成开口区域，且在开口区域增设反射层，在提高微发光二极管转移成功率的同时，进一步提高微发光二极管发光单元的发光效率。\n\n[0075]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0076]以上对本申请实施例所提供的一种显示面板及显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10912, 23966, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种显示装置。\n\n背景技术\n\n[0002]随着全面屏的普及和消费者对机身一体化的追求，屏下传感技术成为中小尺寸显示领域的开发重点。液晶显示(liquid crystal display,LCD)技术因属于整面背光的被动发光结构，光学传感器与光学显示区域无法在空间上重合，较有机发光二极管(organiclight emitting diode,OLED)和微发光二极管(micro light emitting diode,Micro-LED)等像素级主动式发光显示技术存在明显的劣势。\n\n[0003]Micro-LED显示技术因超高亮度、高对比度、响应时间快、信耐性好、透明度高以及可挠性等优势，被认为是下一代显示技术。OLED与Micro-LED用于透明显示时，透过率均比LCD有较大的优势。而与OLED相比，Micro-LED不存在高电流驱动下的寿命问题，能够以更小的像素尺寸达到高亮显示，故更适合用于透明显示技术。\n\n[0004]然而，Micro-LED的外量子效率(external quantum efficiency,EQE)通常会随着尺寸缩小而降低，且因半导体材料折射率的差异，红光Micro-LED的EQE较蓝光、绿光Micro-LED更低，导致Micro-LED应用于透明显示时的功耗较高。目前，业界较为成熟的Micro-LED芯片的尺寸可以做到25～30μm左右，更小尺寸的芯片有待EQE持续优化和转移技术成熟。在现行较大的芯片尺寸下，如何提高Micro-LED显示模块的透过率以提高光学传感器成像质量成为业界研究的方向。\n\n[0005]综上所述，现有采用屏下传感技术的显示装置的微发光二极管显示模块存在功耗较高的问题。故，有必要提供一种显示装置来改善这一缺陷。\n\n发明内容\n\n[0006]本申请实施例提供一种显示装置，用于解决现有采用屏下传感技术的显示装置的微发光二极管显示模块存在功耗较高的问题。\n\n[0007]本申请实施例提供一种显示装置，包括：\n\n[0008]显示面板，包括液晶显示区和临接于所述液晶显示区并用于获取环境光的微发光二极管显示区；\n\n[0009]微发光二极管显示模块，设置于所述微发光二极管显示区内；\n\n[0010]其中，所述微发光二极管显示模块包括呈阵列排布的多个像素单元，每一个所述像素单元包括至少两个颜色不同的子像素，相邻两个所述像素单元的其中之一具有一个与另一个所述像素单元内的子像素颜色不同的子像素，所述微发光二极管显示模块通过子像素渲染法驱动。\n\n[0011]根据本申请一实施例，所述微发光二极管显示模块中的多个所述像素单元采用pentile排列。\n\n[0012]根据本申请一实施例，所述多个像素单元包括在行或列方向上交替重复排列第一像素单元和第二像素单元；\n\n[0013]所述第一像素单元包括依次间隔排列且颜色各不相同的第一子像素、第二子像素和第三子像素；\n\n[0014]所述第二像素单元包括依次间隔排列且颜色各不相同的第四子像素和第五子像素以及一个空白子像素；\n\n[0015]所述第一子像素与所述第四子像素的颜色相同，所述第二子像素与所述第五子像素的颜色相同，相邻所述第一像素单元与所述第二像素单元共用所述第三子像素。\n\n[0016]根据本申请一实施例，所述第一子像素为红色子像素和蓝色子像素中的一个，所述第二子像素为绿色子像素，所述第三子像素为红色子像素和蓝色子像素中的另一个。\n\n[0017]根据本申请一实施例，除所述空白子像素之外，每一个所述子像素包括发光子区和透光子区，所述微发光二极管芯片设置于所述发光子区，所述透光子区的面积大于或等于所述发光子区的面积。\n\n[0018]根据本申请一实施例，所述微发光二极管显示模块在纵向堆叠上采用内藏式、表面嵌入式或者外挂式结构。\n\n[0019]根据本申请一实施例，所述微发光二极管显示模块的驱动电路为有源选址驱动电路或无源选址驱动电路。\n\n[0020]根据本申请一实施例，所述微发光二极管显示区的面积小于或等于10*10mm。\n\n[0021]根据本申请一实施例，所述微发光二极管显示区的像素密度小于或等于所述液晶显示区的像素密度。\n\n[0022]根据本申请一实施例，所述显示装置还包括：\n\n[0023]背光模组，设置于所述显示面板的背侧，所述背光模组与所述微发光二极管显示区对应的位置设有通孔；\n\n[0024]传感器模组，设置于所述通孔内。\n\n[0025]本申请实施例的有益效果：本申请实施例提供一种显示装置，所述显示装置包括显示面板，所述显示面板包括液晶显示区和临接于所述液晶显示区并用于获取环境光的微发光二极管显示区；以及微发光二极管显示模块，设置于所述微发光二极管显示区内，所述微发光二极管显示模块包括呈阵列排布的多个像素单元，每一个所述像素单元包括至少两个颜色不同的子像素，相邻两个所述像素单元的其中之一具有一个与另一个所述像素单元内的子像素颜色不同的子像素，该子像素被该相邻两个所述像素单元共用，以此减少微发光二极管显示区内的子像素的数量，从而提高微发光二极管显示区的透过率，同时通过子像素渲染法驱动所述微发光二极管显示模块，以此增大被借用的子像素内的微发光二极管的驱动电流，来提高该微发光二极管的外量子效率，从而降低微发光二极管显示模块的功耗。\n\n附图说明\n\n[0026]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0027]图1为本申请实施例提供的第一种显示装置的结构示意图；\n\n[0028]图2为本申请实施例提供的微发光二极管显示模块的第一种像素排列示意图；\n\n[0029]图3为本申请实施例提供的微发光二极管显示模块的第二种像素排列示意图；\n\n[0030]图4为本申请实施例提供的微发光二极管显示模块的第三种像素排列示意图；\n\n[0031]图5为本申请实施例提供的微发光二极管显示模块的第四种像素排列示意图\n\n[0032]图6为本申请实施例提供的第二种显示装置的结构示意图；\n\n[0033]图7为本申请实施例提供的第三种显示装置的结构示意图；\n\n[0034]图8(a)-图8(f)为本申请实施例提供的微发光二极管显示区的位置示意图。\n\n具体实施方式\n\n[0035]以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。\n\n[0036]下面结合附图和具体实施例对本申请做进一步的说明。\n\n[0037]本申请实施例提供一种显示装置，下面结合图1进行详细说明。如图1所示，图1为本申请实施例提供的第一种显示装置的结构示意图，所述显示装置100包括显示面板110、背光模组120、传感器模组130和微发光二极管显示模块140。\n\n[0038]显示面板110包括液晶显示区111和临接于液晶显示区111的微发光二极管显示区112，微发光二极管显示区112不仅可以用于进行画面显示，还具备一定的透光率，传感器模组130可通过微发光二极管显示区112获取外界环境光线。微发光二极管显示区112与液晶显示区111无缝衔接，因而在视觉上没有任何明显中断及不连续边界，可以实现完全的全面屏设计。\n\n[0039]具体的，如图1所示，所述显示面板110包括依次层叠设置的下偏光片113、阵列基板114、液晶层115、彩膜基板116和上偏光片117，彩膜基板116在液晶显示区111内设有呈阵列排布的多个色阻，在微发光二极管显示区112内并未设有任何色阻。\n\n[0040]微发光二极管显示模块140设置于所述微发光二极管显示区112内。微发光二极管显示模块140包括呈阵列排布的多个像素单元，每一个像素单元包括至少两个颜色不同的子像素，每一个子像素内均设有一个与该子像素颜色匹配的微发光二极管芯片，相邻两个像素单元的其中之一具有一个与另一个像素单元中的子像素颜色不同的子像素，该相邻两个像素单元共用该子像素，微发光二极管显示模块140通过子像素渲染法驱动。采用子像素渲染法驱动微发光二极管显示模块140，可以通过较少的像素单元实现相同的显示效果，以此减少微发光二极管显示模块140中的像素单元的数量，从而提高微发光二极管显示模块140的透过率，解决现行的微发光二极管芯片尺寸较大导致的微发光二极管显示模块140透过率不高的问题，并降低微发光二极管显示模块140的功耗。\n\n[0041]在一实施例中，微发光二极管显示模块140中的多个像素单元采用pentile排列。\n\n[0042]请参阅图2，图2为本申请实施例提供的微发光二极管显示模块的第一种像素排列示意图，微发光二极管显示模块140包括在行方向上交替重复排列的第一像素单元141和第二像素单元142，第一像素单元141包括两个颜色各不相同的第一子像素143和第二子像素144，第二像素单元142包括两个颜色各不相同的第三子像素145和第四子像素146，第一子像素143与第三子像素145的颜色相同，第二子像素144与第四子像素146的颜色不同，相邻的第一像素单元141和第二像素单元142共用第二子像素144。\n\n[0043]需要说明的是，液晶显示区111内的像素单元采用传统RGB像素单元的排布方式，微发光二极管显示模块140通过子像素渲染法驱动实现三色显示，借用子像素的方式可以根据实际情况进行选择，不局限于上述的采用左右相邻的第一像素单元141和第二像素单元142借用第二子像素144，也可以采用上下借用、左右上下借用、向左借用、向右借用等借用方式。\n\n[0044]进一步的，微发光二极管显示模块140采用红绿蓝(RGB)三色显示，第一子像素143为绿色子像素和蓝色子像素中的一个，第二子像素144为绿色子像素和蓝色子像素中的另一个，第四子像素146为红色子像素，各个子像素中均设置有与其颜色匹配的微发光二极管芯片。在实际应用中，可以根据需求选择微发光二极管显示模块140的三色显示方案，而不仅限于上述的红绿蓝(RGB)三色显示，也可以是蓝色或者紫外线发光二极管芯片搭配颜色转换材料实现三色显示，该颜色转换材料可以为荧光粉、量子点或者其他颜色转换材料。\n\n[0045]具体地，在本申请实施例中，第一子像素143为绿色子像素，第二子像素144为蓝色子像素，第三子像素145为绿色子像素，第四子像素146为红色子像素。\n\n[0046]在一实施例中，如图3所示，图3为本申请实施例提供的微发光二极管显示模块的第二种像素排列示意图，图3所示的微发光二极管显示模块中的像素单元的排列方式与图2中的排列方式大致相同，区别在于，图3中的第一子像素143为蓝色子像素，第二子像素144为绿色子像素，第三子像素145为蓝色子像素，第四子像素146为红色子像素。\n\n[0047]在一实施例中，如图4所示，图4为本申请实施例提供的微发光二极管显示模块的第三种像素排列示意图。微发光二极管显示模块140包括在行和列方向上交替重复排列的第一像素单元141和第二像素单元142。\n\n[0048]第一像素单元141包括依次间隔排列且颜色各不相同的第一子像素143、第二子像素144和第三子像素145，第二像素单元142包括依次间隔排列且颜色各不相同的第四子像素146和第五子像素147以及一个空白子像素148。第一子像素143与第四子像素146的颜色相同，第二子像素144与第五子像素147的颜色相同，相邻的第一像素单元141和第二像素单元142共用第三子像素145。增设的空白子像素148可以提高第二像素单元142的透过率，从而提高微发光二极管显示模块140整体的透过率。\n\n[0049]进一步的，第一子像素143为红色子像素和蓝色子像素中的一个，第二子像素144为绿色子像素，第三子像素145为红色子像素和蓝色子像素中的另一个。\n\n[0050]具体的，如图4所示，第一子像素143和第四子像素146均为红色子像素，第二子像素144为绿色子像素，第三子像素145和第五子像素147均为蓝色子像素。\n\n[0051]在其他一些实施例中，如图5所示，图5为本申请实施例提供的微发光二极管显示模块的第四种像素排列示意图，第一子像素143和第四子像素146均为蓝色子像素，第二子像素144为绿色子像素，第三子像素145和第五子像素147均为红色子像素。\n\n[0052]在一实施例中，如图2至图5所示，除空白子像素148之外，每一子像素包括发光子区1401和透光子区1402，微发光二极管芯片1403设置于发光子区1401，透光子区1402的面积大于或等于发光子区1401的面积，即透光子区1402的面积占所述子像素面积的比例大于或等于50％。各个微发光二极管芯片1403的大小介于1～500μm，各个子像素的大小介于10～1000μm，并且微发光二极管芯片1403的面积小于子像素的面积。因此，在透光子区1402，光线可以正常通过，在各像素单元打开时，微发光二极管显示模块140可以实现正常的画面显示功能，并且在任意时刻，传感器模组130可以通过各个透光子区1402采集外界环境光线，从而实现屏下指纹识别、屏下摄像头、屏下面部识别、屏下距离感知等各种屏下传感方案。因此，微发光二极管显示区112可以与液晶显示区111无缝衔接，因而在视觉上没有任何显示中断及不连续边界，以此实现完全的全面屏设计。同时，由于微发光二极管芯片具有高亮、长寿民的特征，可以采用部分像素单元中的微发光二极管芯片兼做补光灯、指示灯的功能。\n\n[0053]在一实施例中，所述微发光二极管芯片1403为正装结构。在实际应用中，可以根据需求选择微发光二极管芯片1403的类型，而不仅限于上述的正装结构，也可以是垂直结构或者倒装结构(flip-chip)。\n\n[0054]在一实施例中，所述微发光二极管显示模块140在纵向堆叠上采用表面嵌入式(on-cell)的方式设置在显示面板110内。\n\n[0055]具体地，如图1所示，微发光二极管显示模块140形成于彩膜基板116远离阵列基板114的一侧上，微发光二极管显示模块140还包括形成于彩膜基板116上的驱动电路层(图中未示出)以及用于封装保护微发光二极管芯片和驱动电路层的封装层，上偏光片117通过光学胶贴合于微发光二极管显示模块140上。下偏光片113与微发光二极管显示区112对应的位置设有通孔，上偏光片117采用全贴结构，在与微发光二极管显示区112对应的位置并未设有通孔。在实际应用中，也可以在上偏光片117与微发光二极管显示区112对应的位置开设通孔。\n\n[0056]在一实施例中，微发光二极管显示模块140的驱动电路采用有源选址驱动电路(active matrix,AM)，驱动电路中的薄膜晶体管可以为非晶硅(a-si)薄膜晶体管、金属氧化物(IGZO)薄膜晶体管或者低温多晶硅(LTPS)薄膜晶体管等中的一种或多种。在实际应用中，可以根据需求选择所述驱动电路的类型，而不限于上述的有源选址驱动电路，也可以是无源选址驱动电路(passive matrix,PM)。\n\n[0057]在一实施例中，所述微发光二极管显示模块140在纵向堆叠上采用内藏式(in-cell)的方式设置在显示面板110内。\n\n[0058]具体地，如图6所示，图6为本申请实施例提供的第二种显示装置的结构示意图，微发光二极管显示模块140形成于阵列基板114靠近液晶层115的一侧上，下偏光片113与微发光二极管显示区112对应的位置设有通孔，上偏光片117采用全贴结构，在与微发光二极管显示区112对应的位置并未设有通孔。除此之外，其他组件间的相互空间关系皆相同于图1所示的显示装置，故微发光二极管显示区112同样能够以无缝衔接的方式临接于液晶显示区111，因而在视觉上没有任何显示中断及不连续边界。\n\n[0059]在一实施例中，所述微发光二极管显示模块140在纵向堆叠上采用外挂式(add-on)的方式设置在显示面板110内。\n\n[0060]具体地，如图7所示，图7为本申请实施例提供的第三种显示装置的结构示意图，微发光二极管显示模块140形成于上偏光片117远离彩膜基板116的一侧上。微发光二极管显示模块140包括透明衬底基板149和形成于透明衬底基板149上的驱动电路层(图中未示出)、多个微发光二极管芯片以及封装层150，透明衬底基板149通过光学胶层118贴合在上偏光片117上。上偏光片117和下偏光片113在与微发光二极管显示区112对应的位置均开设有通孔。除此之外，其他组件间的相互空间关系皆相同于图1所示的显示装置，故微发光二极管显示区112同样能够以无缝衔接的方式临接于液晶显示区111，因而在视觉上没有任何显示中断及不连续边界。\n\n[0061]在一实施例中，所述透明衬底基板149的材料为无色聚酰亚胺(colorless PI)。在实际应用中，可以根据需求选择透明衬底基板149的材料，而不仅限于上述的无色聚酰亚胺，也可以为玻璃或者PMMA等高透过率材料。\n\n[0062]在一实施例中，所述微发光二极管显示区112的面积为10*10mm。在实际应用中，可以根据需求选择微发光二极管显示区112的面积，而不限于上述的10*10mm，也可以小于10*10mm。如此，可以减小微发光二极管显示模块140的面积，使得需要转印的微发光二极管芯片的数量也可以减少，从而保证微发光二极管芯片的转印良率以及成本控制。\n\n[0063]在一实施例中，所述微发光二极管显示区112的像素密度小于所述液晶显示区111的像素密度。通过降低微发光二极管显示区112内的像素密度，减少微发光二极管显示模块140中微发光二极管芯片的数量，以此提高微发光二极管显示模块140的透过率。在实际应用中，可以根据需求选择微发光二极管显示区112和液晶显示区111的像素密度大小，而不限于上述的微发光二极管显示区112的像素密度小于液晶显示区111的像素密度，也可以是微发光二极管显示区112的像素密度等于液晶显示区111的像素密度。\n\n[0064]在一实施例中，如图8(a)-图8(f)所示，图8(a)-图8(f)为本申请实施例提供的微发光二极管显示区的位置示意图，微发光二极管显示区112设置于显示面板110的液晶显示区111中的挖孔位置，该挖孔的形状可以为圆形(如图8(a))、椭圆形(如图8(d))或者矩形(如图8(f))，该挖孔的位置可以位于液晶显示区111内的任意区域。在实际应用中，可以根据需求选择微发光二极管显示区112的位置和形状，而不限于上述的位于液晶显示区111内的挖孔，也可以是位于液晶显示区111一侧边缘的水滴形挖孔(如图8(b))或者凹口(如图8(c))，还可以是位于液晶显示区111之外(如图8(f))等位置，且所述微发光二极管显示区112可以与液晶显示区111无缝衔接，因而在视觉上没有任何显示中断及不连续边界，以此实现完全的全面屏设计。\n\n[0065]在一实施例中，请参阅图1，所述背光模组120设置于所述显示面板110的背侧，即所述显示面板110的入光侧。所述背光模组120与所述微发光二极管显示区112对应的位置设有通孔，所述传感器模组130设置于所述通孔内。具体的，所述背光模组120为侧入式背光模组，光源设置于所述背光模组120的导光板的入光侧。\n\n[0066]在一实施例中，所述传感器模组130为摄像头，设置于本申请实施例所提供的显示装置内，可以实现屏下摄像的技术效果。在实际应用中，可以根据需求选择传感器模组130中传感器的类型和数量，而不限于上述的摄像头，也可以是指纹识别传感器、摄像头、结构光传感器、距离传感器、光线传感器或者飞行时间传感器中的至少一种或者多种的组合。\n\n[0067]综上所述，本申请实施例提供一种显示装置，所述显示装置包括显示面板，所述显示面板包括液晶显示区和临接于所述液晶显示区并用于获取外界光线的微发光二极管显示区；背光模组，与所述显示面板相对设置，所述背光模组与所述微发光二极管显示区对应的位置设有通孔；传感器模组，设置于所述通孔内；以及微发光二极管显示模块，设置于所述微发光二极管显示区内，所述微发光二极管显示模块包括呈阵列排布的多个像素单元，每一个所述像素单元包括至少两个颜色不同的子像素，每一个所述子像素内均设有一个与所述子像素颜色匹配的微发光二极管芯片，相邻两个所述像素单元共用其中一个所述像素单元中的一个所述子像素，以此减少微发光二极管显示区内的微发光二极管芯片的数量，从而提高微发光二极管显示区的透过率，同时通过子像素渲染法驱动所述微发光二极管显示模块，以此增大被借用的子像素内的微发光二极管的驱动电流，来提高该微发光二极管的外量子效率，从而降低微发光二极管显示模块的功耗。\n\n[0068]综上所述，虽然本申请以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为基准。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种显示装置。\n\n背景技术\n\n[0002]随着全面屏的普及和消费者对机身一体化的追求，屏下传感技术成为中小尺寸显示领域的开发重点。液晶显示(liquid crystal display,LCD)技术因属于整面背光的被动发光结构，光学传感器与光学显示区域无法在空间上重合，较有机发光二极管(organiclight emitting diode,OLED)和微发光二极管(micro light emitting diode,Micro-LED)等像素级主动式发光显示技术存在明显的劣势。\n\n[0003]Micro-LED显示技术因超高亮度、高对比度、响应时间快、信耐性好、透明度高以及可挠性等优势，被认为是下一代显示技术。OLED与Micro-LED用于透明显示时，透过率均比LCD有较大的优势。而与OLED相比，Micro-LED不存在高电流驱动下的寿命问题，能够以更小的像素尺寸达到高亮显示，故更适合用于透明显示技术。\n\n[0004]然而，Micro-LED的外量子效率(external quantum efficiency,EQE)通常会随着尺寸缩小而降低，且因半导体材料折射率的差异，红光Micro-LED的EQE较蓝光、绿光Micro-LED更低，导致Micro-LED应用于透明显示时的功耗较高。目前，业界较为成熟的Micro-LED芯片的尺寸可以做到25～30μm左右，更小尺寸的芯片有待EQE持续优化和转移技术成熟。在现行较大的芯片尺寸下，如何提高Micro-LED显示模块的透过率以提高光学传感器成像质量成为业界研究的方向。\n\n[0005]综上所述，现有采用屏下传感技术的显示装置的微发光二极管显示模块存在功耗较高的问题。故，有必要提供一种显示装置来改善这一缺陷。\n\n发明内容\n\n[0006]本申请实施例提供一种显示装置，用于解决现有采用屏下传感技术的显示装置的微发光二极管显示模块存在功耗较高的问题。\n\n[0007]本申请实施例提供一种显示装置，包括：\n\n[0008]显示面板，包括液晶显示区和临接于所述液晶显示区并用于获取环境光的微发光二极管显示区；\n\n[0009]微发光二极管显示模块，设置于所述微发光二极管显示区内；\n\n[0010]其中，所述微发光二极管显示模块包括呈阵列排布的多个像素单元，每一个所述像素单元包括至少两个颜色不同的子像素，相邻两个所述像素单元的其中之一具有一个与另一个所述像素单元内的子像素颜色不同的子像素，所述微发光二极管显示模块通过子像素渲染法驱动。\n\n[0011]根据本申请一实施例，所述微发光二极管显示模块中的多个所述像素单元采用pentile排列。\n\n[0012]根据本申请一实施例，所述多个像素单元包括在行或列方向上交替重复排列第一像素单元和第二像素单元；\n\n[0013]所述第一像素单元包括依次间隔排列且颜色各不相同的第一子像素、第二子像素和第三子像素；\n\n[0014]所述第二像素单元包括依次间隔排列且颜色各不相同的第四子像素和第五子像素以及一个空白子像素；\n\n[0015]所述第一子像素与所述第四子像素的颜色相同，所述第二子像素与所述第五子像素的颜色相同，相邻所述第一像素单元与所述第二像素单元共用所述第三子像素。\n\n[0016]根据本申请一实施例，所述第一子像素为红色子像素和蓝色子像素中的一个，所述第二子像素为绿色子像素，所述第三子像素为红色子像素和蓝色子像素中的另一个。\n\n[0017]根据本申请一实施例，除所述空白子像素之外，每一个所述子像素包括发光子区和透光子区，所述微发光二极管芯片设置于所述发光子区，所述透光子区的面积大于或等于所述发光子区的面积。\n\n[0018]根据本申请一实施例，所述微发光二极管显示模块在纵向堆叠上采用内藏式、表面嵌入式或者外挂式结构。\n\n[0019]根据本申请一实施例，所述微发光二极管显示模块的驱动电路为有源选址驱动电路或无源选址驱动电路。\n\n[0020]根据本申请一实施例，所述微发光二极管显示区的面积小于或等于10*10mm。\n\n[0021]根据本申请一实施例，所述微发光二极管显示区的像素密度小于或等于所述液晶显示区的像素密度。\n\n[0022]根据本申请一实施例，所述显示装置还包括：\n\n[0023]背光模组，设置于所述显示面板的背侧，所述背光模组与所述微发光二极管显示区对应的位置设有通孔；\n\n[0024]传感器模组，设置于所述通孔内。\n\n[0025]本申请实施例的有益效果：本申请实施例提供一种显示装置，所述显示装置包括显示面板，所述显示面板包括液晶显示区和临接于所述液晶显示区并用于获取环境光的微发光二极管显示区；以及微发光二极管显示模块，设置于所述微发光二极管显示区内，所述微发光二极管显示模块包括呈阵列排布的多个像素单元，每一个所述像素单元包括至少两个颜色不同的子像素，相邻两个所述像素单元的其中之一具有一个与另一个所述像素单元内的子像素颜色不同的子像素，该子像素被该相邻两个所述像素单元共用，以此减少微发光二极管显示区内的子像素的数量，从而提高微发光二极管显示区的透过率，同时通过子像素渲染法驱动所述微发光二极管显示模块，以此增大被借用的子像素内的微发光二极管的驱动电流，来提高该微发光二极管的外量子效率，从而降低微发光二极管显示模块的功耗。\n\n附图说明\n\n[0026]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0027]图1为本申请实施例提供的第一种显示装置的结构示意图；\n\n[0028]图2为本申请实施例提供的微发光二极管显示模块的第一种像素排列示意图；\n\n[0029]图3为本申请实施例提供的微发光二极管显示模块的第二种像素排列示意图；\n\n[0030]图4为本申请实施例提供的微发光二极管显示模块的第三种像素排列示意图；\n\n[0031]图5为本申请实施例提供的微发光二极管显示模块的第四种像素排列示意图\n\n[0032]图6为本申请实施例提供的第二种显示装置的结构示意图；\n\n[0033]图7为本申请实施例提供的第三种显示装置的结构示意图；\n\n[0034]图8(a)-图8(f)为本申请实施例提供的微发光二极管显示区的位置示意图。\n\n具体实施方式\n\n[0035]以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。\n\n[0036]下面结合附图和具体实施例对本申请做进一步的说明。\n\n[0037]本申请实施例提供一种显示装置，下面结合图1进行详细说明。如图1所示，图1为本申请实施例提供的第一种显示装置的结构示意图，所述显示装置100包括显示面板110、背光模组120、传感器模组130和微发光二极管显示模块140。\n\n[0038]显示面板110包括液晶显示区111和临接于液晶显示区111的微发光二极管显示区112，微发光二极管显示区112不仅可以用于进行画面显示，还具备一定的透光率，传感器模组130可通过微发光二极管显示区112获取外界环境光线。微发光二极管显示区112与液晶显示区111无缝衔接，因而在视觉上没有任何明显中断及不连续边界，可以实现完全的全面屏设计。\n\n[0039]具体的，如图1所示，所述显示面板110包括依次层叠设置的下偏光片113、阵列基板114、液晶层115、彩膜基板116和上偏光片117，彩膜基板116在液晶显示区111内设有呈阵列排布的多个色阻，在微发光二极管显示区112内并未设有任何色阻。\n\n[0040]微发光二极管显示模块140设置于所述微发光二极管显示区112内。微发光二极管显示模块140包括呈阵列排布的多个像素单元，每一个像素单元包括至少两个颜色不同的子像素，每一个子像素内均设有一个与该子像素颜色匹配的微发光二极管芯片，相邻两个像素单元的其中之一具有一个与另一个像素单元中的子像素颜色不同的子像素，该相邻两个像素单元共用该子像素，微发光二极管显示模块140通过子像素渲染法驱动。采用子像素渲染法驱动微发光二极管显示模块140，可以通过较少的像素单元实现相同的显示效果，以此减少微发光二极管显示模块140中的像素单元的数量，从而提高微发光二极管显示模块140的透过率，解决现行的微发光二极管芯片尺寸较大导致的微发光二极管显示模块140透过率不高的问题，并降低微发光二极管显示模块140的功耗。\n\n[0041]在一实施例中，微发光二极管显示模块140中的多个像素单元采用pentile排列。\n\n[0042]请参阅图2，图2为本申请实施例提供的微发光二极管显示模块的第一种像素排列示意图，微发光二极管显示模块140包括在行方向上交替重复排列的第一像素单元141和第二像素单元142，第一像素单元141包括两个颜色各不相同的第一子像素143和第二子像素144，第二像素单元142包括两个颜色各不相同的第三子像素145和第四子像素146，第一子像素143与第三子像素145的颜色相同，第二子像素144与第四子像素146的颜色不同，相邻的第一像素单元141和第二像素单元142共用第二子像素144。\n\n[0043]需要说明的是，液晶显示区111内的像素单元采用传统RGB像素单元的排布方式，微发光二极管显示模块140通过子像素渲染法驱动实现三色显示，借用子像素的方式可以根据实际情况进行选择，不局限于上述的采用左右相邻的第一像素单元141和第二像素单元142借用第二子像素144，也可以采用上下借用、左右上下借用、向左借用、向右借用等借用方式。\n\n[0044]进一步的，微发光二极管显示模块140采用红绿蓝(RGB)三色显示，第一子像素143为绿色子像素和蓝色子像素中的一个，第二子像素144为绿色子像素和蓝色子像素中的另一个，第四子像素146为红色子像素，各个子像素中均设置有与其颜色匹配的微发光二极管芯片。在实际应用中，可以根据需求选择微发光二极管显示模块140的三色显示方案，而不仅限于上述的红绿蓝(RGB)三色显示，也可以是蓝色或者紫外线发光二极管芯片搭配颜色转换材料实现三色显示，该颜色转换材料可以为荧光粉、量子点或者其他颜色转换材料。\n\n[0045]具体地，在本申请实施例中，第一子像素143为绿色子像素，第二子像素144为蓝色子像素，第三子像素145为绿色子像素，第四子像素146为红色子像素。\n\n[0046]在一实施例中，如图3所示，图3为本申请实施例提供的微发光二极管显示模块的第二种像素排列示意图，图3所示的微发光二极管显示模块中的像素单元的排列方式与图2中的排列方式大致相同，区别在于，图3中的第一子像素143为蓝色子像素，第二子像素144为绿色子像素，第三子像素145为蓝色子像素，第四子像素146为红色子像素。\n\n[0047]在一实施例中，如图4所示，图4为本申请实施例提供的微发光二极管显示模块的第三种像素排列示意图。微发光二极管显示模块140包括在行和列方向上交替重复排列的第一像素单元141和第二像素单元142。\n\n[0048]第一像素单元141包括依次间隔排列且颜色各不相同的第一子像素143、第二子像素144和第三子像素145，第二像素单元142包括依次间隔排列且颜色各不相同的第四子像素146和第五子像素147以及一个空白子像素148。第一子像素143与第四子像素146的颜色相同，第二子像素144与第五子像素147的颜色相同，相邻的第一像素单元141和第二像素单元142共用第三子像素145。增设的空白子像素148可以提高第二像素单元142的透过率，从而提高微发光二极管显示模块140整体的透过率。\n\n[0049]进一步的，第一子像素143为红色子像素和蓝色子像素中的一个，第二子像素144为绿色子像素，第三子像素145为红色子像素和蓝色子像素中的另一个。\n\n[0050]具体的，如图4所示，第一子像素143和第四子像素146均为红色子像素，第二子像素144为绿色子像素，第三子像素145和第五子像素147均为蓝色子像素。\n\n[0051]在其他一些实施例中，如图5所示，图5为本申请实施例提供的微发光二极管显示模块的第四种像素排列示意图，第一子像素143和第四子像素146均为蓝色子像素，第二子像素144为绿色子像素，第三子像素145和第五子像素147均为红色子像素。\n\n[0052]在一实施例中，如图2至图5所示，除空白子像素148之外，每一子像素包括发光子区1401和透光子区1402，微发光二极管芯片1403设置于发光子区1401，透光子区1402的面积大于或等于发光子区1401的面积，即透光子区1402的面积占所述子像素面积的比例大于或等于50％。各个微发光二极管芯片1403的大小介于1～500μm，各个子像素的大小介于10～1000μm，并且微发光二极管芯片1403的面积小于子像素的面积。因此，在透光子区1402，光线可以正常通过，在各像素单元打开时，微发光二极管显示模块140可以实现正常的画面显示功能，并且在任意时刻，传感器模组130可以通过各个透光子区1402采集外界环境光线，从而实现屏下指纹识别、屏下摄像头、屏下面部识别、屏下距离感知等各种屏下传感方案。因此，微发光二极管显示区112可以与液晶显示区111无缝衔接，因而在视觉上没有任何显示中断及不连续边界，以此实现完全的全面屏设计。同时，由于微发光二极管芯片具有高亮、长寿民的特征，可以采用部分像素单元中的微发光二极管芯片兼做补光灯、指示灯的功能。\n\n[0053]在一实施例中，所述微发光二极管芯片1403为正装结构。在实际应用中，可以根据需求选择微发光二极管芯片1403的类型，而不仅限于上述的正装结构，也可以是垂直结构或者倒装结构(flip-chip)。\n\n[0054]在一实施例中，所述微发光二极管显示模块140在纵向堆叠上采用表面嵌入式(on-cell)的方式设置在显示面板110内。\n\n[0055]具体地，如图1所示，微发光二极管显示模块140形成于彩膜基板116远离阵列基板114的一侧上，微发光二极管显示模块140还包括形成于彩膜基板116上的驱动电路层(图中未示出)以及用于封装保护微发光二极管芯片和驱动电路层的封装层，上偏光片117通过光学胶贴合于微发光二极管显示模块140上。下偏光片113与微发光二极管显示区112对应的位置设有通孔，上偏光片117采用全贴结构，在与微发光二极管显示区112对应的位置并未设有通孔。在实际应用中，也可以在上偏光片117与微发光二极管显示区112对应的位置开设通孔。\n\n[0056]在一实施例中，微发光二极管显示模块140的驱动电路采用有源选址驱动电路(active matrix,AM)，驱动电路中的薄膜晶体管可以为非晶硅(a-si)薄膜晶体管、金属氧化物(IGZO)薄膜晶体管或者低温多晶硅(LTPS)薄膜晶体管等中的一种或多种。在实际应用中，可以根据需求选择所述驱动电路的类型，而不限于上述的有源选址驱动电路，也可以是无源选址驱动电路(passive matrix,PM)。\n\n[0057]在一实施例中，所述微发光二极管显示模块140在纵向堆叠上采用内藏式(in-cell)的方式设置在显示面板110内。\n\n[0058]具体地，如图6所示，图6为本申请实施例提供的第二种显示装置的结构示意图，微发光二极管显示模块140形成于阵列基板114靠近液晶层115的一侧上，下偏光片113与微发光二极管显示区112对应的位置设有通孔，上偏光片117采用全贴结构，在与微发光二极管显示区112对应的位置并未设有通孔。除此之外，其他组件间的相互空间关系皆相同于图1所示的显示装置，故微发光二极管显示区112同样能够以无缝衔接的方式临接于液晶显示区111，因而在视觉上没有任何显示中断及不连续边界。\n\n[0059]在一实施例中，所述微发光二极管显示模块140在纵向堆叠上采用外挂式(add-on)的方式设置在显示面板110内。\n\n[0060]具体地，如图7所示，图7为本申请实施例提供的第三种显示装置的结构示意图，微发光二极管显示模块140形成于上偏光片117远离彩膜基板116的一侧上。微发光二极管显示模块140包括透明衬底基板149和形成于透明衬底基板149上的驱动电路层(图中未示出)、多个微发光二极管芯片以及封装层150，透明衬底基板149通过光学胶层118贴合在上偏光片117上。上偏光片117和下偏光片113在与微发光二极管显示区112对应的位置均开设有通孔。除此之外，其他组件间的相互空间关系皆相同于图1所示的显示装置，故微发光二极管显示区112同样能够以无缝衔接的方式临接于液晶显示区111，因而在视觉上没有任何显示中断及不连续边界。\n\n[0061]在一实施例中，所述透明衬底基板149的材料为无色聚酰亚胺(colorless PI)。在实际应用中，可以根据需求选择透明衬底基板149的材料，而不仅限于上述的无色聚酰亚胺，也可以为玻璃或者PMMA等高透过率材料。\n\n[0062]在一实施例中，所述微发光二极管显示区112的面积为10*10mm。在实际应用中，可以根据需求选择微发光二极管显示区112的面积，而不限于上述的10*10mm，也可以小于10*10mm。如此，可以减小微发光二极管显示模块140的面积，使得需要转印的微发光二极管芯片的数量也可以减少，从而保证微发光二极管芯片的转印良率以及成本控制。\n\n[0063]在一实施例中，所述微发光二极管显示区112的像素密度小于所述液晶显示区111的像素密度。通过降低微发光二极管显示区112内的像素密度，减少微发光二极管显示模块140中微发光二极管芯片的数量，以此提高微发光二极管显示模块140的透过率。在实际应用中，可以根据需求选择微发光二极管显示区112和液晶显示区111的像素密度大小，而不限于上述的微发光二极管显示区112的像素密度小于液晶显示区111的像素密度，也可以是微发光二极管显示区112的像素密度等于液晶显示区111的像素密度。\n\n[0064]在一实施例中，如图8(a)-图8(f)所示，图8(a)-图8(f)为本申请实施例提供的微发光二极管显示区的位置示意图，微发光二极管显示区112设置于显示面板110的液晶显示区111中的挖孔位置，该挖孔的形状可以为圆形(如图8(a))、椭圆形(如图8(d))或者矩形(如图8(f))，该挖孔的位置可以位于液晶显示区111内的任意区域。在实际应用中，可以根据需求选择微发光二极管显示区112的位置和形状，而不限于上述的位于液晶显示区111内的挖孔，也可以是位于液晶显示区111一侧边缘的水滴形挖孔(如图8(b))或者凹口(如图8(c))，还可以是位于液晶显示区111之外(如图8(f))等位置，且所述微发光二极管显示区112可以与液晶显示区111无缝衔接，因而在视觉上没有任何显示中断及不连续边界，以此实现完全的全面屏设计。\n\n[0065]在一实施例中，请参阅图1，所述背光模组120设置于所述显示面板110的背侧，即所述显示面板110的入光侧。所述背光模组120与所述微发光二极管显示区112对应的位置设有通孔，所述传感器模组130设置于所述通孔内。具体的，所述背光模组120为侧入式背光模组，光源设置于所述背光模组120的导光板的入光侧。\n\n[0066]在一实施例中，所述传感器模组130为摄像头，设置于本申请实施例所提供的显示装置内，可以实现屏下摄像的技术效果。在实际应用中，可以根据需求选择传感器模组130中传感器的类型和数量，而不限于上述的摄像头，也可以是指纹识别传感器、摄像头、结构光传感器、距离传感器、光线传感器或者飞行时间传感器中的至少一种或者多种的组合。\n\n[0067]综上所述，本申请实施例提供一种显示装置，所述显示装置包括显示面板，所述显示面板包括液晶显示区和临接于所述液晶显示区并用于获取外界光线的微发光二极管显示区；背光模组，与所述显示面板相对设置，所述背光模组与所述微发光二极管显示区对应的位置设有通孔；传感器模组，设置于所述通孔内；以及微发光二极管显示模块，设置于所述微发光二极管显示区内，所述微发光二极管显示模块包括呈阵列排布的多个像素单元，每一个所述像素单元包括至少两个颜色不同的子像素，每一个所述子像素内均设有一个与所述子像素颜色匹配的微发光二极管芯片，相邻两个所述像素单元共用其中一个所述像素单元中的一个所述子像素，以此减少微发光二极管显示区内的微发光二极管芯片的数量，从而提高微发光二极管显示区的透过率，同时通过子像素渲染法驱动所述微发光二极管显示模块，以此增大被借用的子像素内的微发光二极管的驱动电流，来提高该微发光二极管的外量子效率，从而降低微发光二极管显示模块的功耗。\n\n[0068]综上所述，虽然本申请以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为基准。');
INSERT INTO `os_patent_instruction_text` VALUES (10913, 23967, '技术领域\n\n[0001]本发明涉及显示技术领域，具体涉及一种像素驱动电路、一种显示面板及一种显示装置。\n\n背景技术\n\n[0002]像素驱动电路中驱动发光器件发光的驱动电流会受驱动晶体管的阈值电压的影响，导致发光器件出现亮度不均的问题，影响显示面板的显示质量。\n\n发明内容\n\n[0003]本发明实施例提供一种像素驱动电路、一种显示面板及一种显示装置，可以降低驱动晶体管的阈值电压对驱动电流的影响。\n\n[0004]本发明实施例提供一种像素驱动电路，所述像素驱动电路包括发光器件、驱动晶体管、第一重置晶体管、第一电容及第二电容。所述驱动晶体管与所述发光器件串联于第一电压端和第二电压端之间，所述第一重置晶体管连接于第一重置电压端与所述驱动晶体管的栅极之间，所述第一电容的第一端与所述驱动晶体管的所述栅极连接，所述第一电容的第二端与所述驱动晶体管的源极或漏极中的一者连接，所述第二电容的第一端与所述第一电容的所述第二端连接，所述第二电容的第二端与第二电压端连接。\n\n[0005]本发明的实施例还提供一种显示面板，所述显示面板包括多个发光器件及多个像素驱动电路；每一所述像素驱动电路用于驱动对应的所述发光器件发光；每一所述像素驱动电路包括第一晶体管及重置补偿模块，所述重置补偿模块包括第二晶体管、第一电容及第二电容；所述第二晶体管用于根据重置控制信号将第一重置电压信号加载至所述驱动晶体管的栅极，所述第一电容用于存储所述驱动晶体管的阈值电压，所述第二电容用于将所述阈值电压耦合至所述第一电容。\n\n[0006]本发明的实施例还提供一种显示装置，所述显示装置包括任一上述的像素驱动电路或任一上述的显示面板。\n\n[0007]在本发明实施例提供的像素驱动电路、显示面板及显示装置中，所述像素驱动电路包括发光器件、驱动晶体管、第一重置晶体管、第一电容及第二电容。所述驱动晶体管与所述发光器件串联于第一电压端和第二电压端之间，所述第一重置晶体管连接于第一重置电压端与所述驱动晶体管的栅极之间，所述第一电容的第一端与所述驱动晶体管的所述栅极连接，所述第一电容的第二端与所述驱动晶体管的源极或漏极中的一者连接，所述第二电容的第一端与所述第一电容的所述第二端连接，所述第二电容的第二端与第二电压端连接。所述像素驱动电路可利用所述第一电压端、所述第二电压端及所述第一重置电压端将所述驱动晶体管的阈值电压通过所述第二电容耦合至所述第一电容，从而在所述驱动晶体管驱动所述发光器件发光时，降低所述驱动晶体管的阈值电压对所述驱动晶体管驱动电流的影响，保证所述发光器件发光的稳定性。\n\n附图说明\n\n[0008]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0009]图1A～图1F是本发明实施例提供的像素驱动电路的结构示意图；\n\n[0010]图2A是图1A和图1D所示的像素驱动电路的工作时序图；\n\n[0011]图2B是图1B和图1E所示的像素驱动电路的工作时序图；\n\n[0012]图2C是图1C和图1F所示的像素驱动电路的工作时序图；\n\n[0013]图3A～图3B是本发明实施例提供的显示面板的结构示意图；\n\n[0014]图3C～图3D是沿图3B中的A-A’剖切的剖面图；\n\n[0015]图4A～图4F是本发明的实施例提供的像素驱动电路的结构示意图。\n\n具体实施方式\n\n[0016]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本发明，并不用于限制本发明。在本发明中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0017]如图1A～图1F是本发明实施例提供的像素驱动电路的结构示意图；本发明的实施例提供一种像素驱动电路，所述像素驱动电路包括发光器件D1、驱动晶体管Td、第一重置晶体管Ts1、第一电容C1及第二电容C2。\n\n[0018]可选地，所述发光器件D1包括有机发光二极管、次毫米发光二极管或微型发光二极管。\n\n[0019]进一步地，所述有机发光二极管包括倒置型有机发光二极管，所述倒置型有机发光二极管串联于第一电压端OVDD与所述驱动晶体管Td的漏极之间，如图1A～图1C所示。\n\n[0020]进一步地，所述有机发光二极管包括正型有机发光二极管，所述正型有机发光二极管串联于第二电压端OVSS与所述驱动晶体管Td的源极之间，如图1D～图1F所示。\n\n[0021]请继续参阅图1A～图1F，所述驱动晶体管Td与所述发光器件D1串联在第一电压端OVDD与第二电压端OVSS之间，所述驱动晶体管Td用于根据数据信号Vdata产生驱动所述发光器件D1发光的驱动电流I。所述第一电压端OVDD载入的第一电压信号的电压值大于所述第二电压端OVSS载入的第二电压信号的电压值。\n\n[0022]可选地，所述驱动晶体管Td包括场效应晶体管；进一步地，所述场效应晶体管包括薄膜晶体管。可选地，所述驱动晶体管Td包括无机半导体层或有机半导体层。进一步地，所述无机半导体层包括非晶硅半导体、多晶硅半导体、氧化物半导体等材料。可选地，所述驱动晶体管Td为N型晶体管或P型晶体管。\n\n[0023]所述第一重置晶体管Ts1连接于第一重置电压端VI1与所述驱动晶体管Td的栅极之间，以通过所述第一重置晶体管Ts1重置所述驱动晶体管Td的栅极电压Vg。其中，所述第一电压端OVDD载入的第一电压信号的电压值大于所述第一重置电压端VI1载入的第一重置电压信号Vcm的电压值；所述第一重置电压端VI1载入的所述第一重置电压信号Vcm的电压值大于所述驱动晶体管Td的所述阈值电压Vth。\n\n[0024]具体地，所述第一重置晶体管Ts1的栅极与重置控制信号线EM2连接，所述第一重置晶体管Ts1的源极或漏极中的一者与所述第一重置电压端VI1连接，所述第一重置晶体管Ts1的所述源极或所述漏极中的另一者与所述驱动晶体管Td的所述栅极连接。其中，所述重置控制信号线EM2被配置为向所述第一重置晶体管Ts1提供重置控制信号em2。\n\n[0025]所述第一电容C1串联于所述驱动晶体管Td的所述栅极与所述驱动晶体管Td的所述源极或所述漏极中的一者之间，所述第一电容C1用于存储所述驱动晶体管Ts1的阈值电压Vth。\n\n[0026]具体地，所述第一电容C1的第一端与所述驱动晶体管Td的所述栅极连接，所述第一电容C1的第二端与所述驱动晶体管Td的所述源极连接。\n\n[0027]所述第二电容C2串联于所述第二电压端OVSS与所述驱动晶体管Td的所述源极或所述漏极中与所述第一电容C1连接的一者之间，所述第二电容C2用于将所述驱动晶体管Td的所述阈值电压Vth耦合至所述第一电容C1中。\n\n[0028]具体地，所述第二电容C2的第一端与所述第一电容C1的所述第二端连接，所述第二电容C2的所述第二端与所述第二电压端OVSS连接。\n\n[0029]在所述像素驱动电路中，所述第一重置电压端VI1载入的第一重置电压信号Vcm经所述第一重置晶体管Ts1传输至所述驱动晶体管Td的所述栅极，实现对所述驱动晶体管Td的所述栅极电压Vg的重置。利用所述第一重置电压端VI1、所述第一电压端OVDD及所述第二电压端OVSS，使所述驱动晶体管Td的所述阈值电压Vth经所述第二电容C2耦合至所述第一电容C1中，以在所述驱动晶体管Td在根据所述数据信号Vdata产生驱动所述发光器件D1发光的驱动电流I时，降低所述阈值电压Vth对所述驱动电流I的影响，保证所述发光器件D1的发光稳定性。\n\n[0030]请继续参阅图1A～图1F，所述像素驱动电路还包括数据晶体管Tda，所述数据晶体管Tda连接于数据电压端Data与所述驱动晶体管Td的所述栅极之间，所述数据晶体管Tda用于将所述数据信号Vdata传输至所述驱动晶体管Td的所述栅极。\n\n[0031]具体地，所述数据晶体管Tda的栅极与数据写入控制信号线WR连接，所述数据晶体管Tda的源极或漏极中的一者与所述数据电压端Data连接，所述数据晶体管Tda的所述源极或所述漏极中的另一者与所述驱动晶体管Td的所述栅极连接。其中，所述数据写入控制信号线WR被配置为向所述数据晶体管Tda提供数据写入控制信号wr。\n\n[0032]可选地，所述数据晶体管Tda的所述源极或所述漏极中的另一者与所述驱动晶体管Td的所述栅极直接连接，如图1A和图1D所示。\n\n[0033]可选地，所述数据晶体管Tda的所述源极或所述漏极中的另一者与所述驱动晶体管Td的所述栅极间接连接，如图1B～图1C及图1E～图1F所示。具体地，所述像素驱动电路还包括第三电容C3，所述第三电容C3串联于所述数据晶体管Tda的所述源极或所述漏极中的另一者与所述驱动晶体管Td的所述栅极之间，以用于将所述数据信号Vdata耦合至所述驱动晶体管Td的所述栅极。即所述第三电容C3的第一端与所述驱动晶体管Td的所述栅极连接，所述第三电容C3的第二端与所述数据晶体管Tda的所述源极或所述漏极中的另一者连接。\n\n[0034]进一步地，所述像素驱动电路还包括第二重置晶体管Ts2，所述第二重置晶体管Ts2连接于第二重置电压端VI2与所述第三电容C3的所述第二端之间，以用于和所述第一重置晶体管Ts1重置所述第三电容C3的两端电压。\n\n[0035]具体地，所述第二重置晶体管Ts2的栅极与所述重置控制信号线EM2连接，所述第二重置晶体管Ts2的源极或漏极中的一者与所述第二重置电压端VI2连接，所述第二重置晶体管Ts2的所述源极或所述漏极中的另一者与所述第三电容C3的所述第二端连接。其中，所述重置控制信号线EM2被配置为向所述第一重置晶体管Ts1、所述第二重置晶体管Ts2提供所述重置控制信号em2；所述第一电压端OVDD载入的第一电压信号的电压值大于所述第二重置电压端VI2载入的第二重置电压信号Vi的电压值。\n\n[0036]请继续参阅图1A～图1F，所述像素驱动电路还包括第一开关晶体管Te1，所述第一开关晶体管Te1连接于所述第二电压端OVSS与所述驱动晶体管Td的所述源极或所述漏极中与所述第一电容C1的所述第二端连接的一者之间，所述第一开关晶体管Te1用于在所述第二电容C2将所述驱动晶体管Td的所述阈值电压Vth耦合至所述第一电容C1中时，断开所述驱动晶体管Td与所述第二电压端OVSS的电性连接。\n\n[0037]具体地，所述第一开关晶体管Te1的栅极与第一发光控制信号线EM1连接，所述第一开关晶体管Te1的源极或漏极中的一者与所述驱动晶体管Td的源极、所述第一电容C1的所述第二端、所述第二电容C2的所述第一端连接，所述第一开关晶体管Te1的所述源极或所述漏极中的另一者与所述第二电压端OVSS、所述第二电容C2的所述第二端连接。其中，所述第一发光控制信号线EM1被配置为向所述第一开关晶体管Te1提供第一发光控制信号em1。\n\n[0038]可选地，所述第一开关晶体管Te1的所述源极或所述漏极中的另一者与所述第二电压端OVSS、所述第二电容C2的所述第二端直接连接，如图1A～图1C所示。\n\n[0039]可选地，所述第一开关晶体管Te1的所述源极或所述漏极中的另一者与所述第二电压端OVSS、所述第二电容C2的所述第二端间接连接，如图1D～图1F所示。具体地，所述第一开关晶体管Te1的所述源极或所述漏极中的另一者与所述发光器件D1的阳极连接，所述发光器件D1的阴极与所述第二电压端OVSS、所述第二电容C2的所述第二端直接连接。\n\n[0040]请继续参阅图1C和图1F，所述像素驱动电路还包括第二开关晶体管Te2，所述第二开关晶体管Te2连接于所述驱动晶体管Td的所述源极或所述漏极中的另一者与所述第一电压端OVDD之间，所述第二开光晶体管Te2用于在将所述数据信号Vdata传输至所述驱动晶体管Td的所述栅极时，断开所述第一电压端OVDD与所述驱动晶体管Td的电性连接，以降低所述第一电压端OVDD对所述第一电容C1存储的电压的影响。\n\n[0041]具体地，所述第二开关晶体管Te2的栅极与第二发光控制信号线EM3，所述第二开关晶体管Te2的源极或漏极中的一者与所述驱动晶体管Td的所述漏极连接，所述第二开关晶体管Te2的所述源极或所述漏极中的另一者与所述第一电压端OVDD连接。其中，所述第二发光控制信号线EM3被配置为向所述第二开关晶体管Te2提供第二发光控制信号em3。\n\n[0042]可选地，所述第二开关晶体管Te2的所述源极或所述漏极中的另一者与所述第一电压端OVDD间接连接，如图1C所示。具体地，所述发光器件D1的阳极与所述第一电压端OVDD连接，所述第二开关晶体管Te2的所述源极或所述漏极中的另一者与所述发光器件D1的阴极连接。\n\n[0043]可选地，所述第二开关晶体管Te2的所述源极或所述漏极中的另一者与所述第一电压端OVDD直接连接，如图1F所示。\n\n[0044]可选地，所述第一重置晶体管Ts1、所述第二重置晶体管Ts2、所述数据晶体管Tda、所述第一开关晶体管Te1及所述第二开关晶体管Te2包括场效应晶体管；进一步地，所述场效应晶体管包括薄膜晶体管。可选地，所述第一重置晶体管Ts1、所述第二重置晶体管Ts2、所述数据晶体管Tda、所述第一开关晶体管Te1及所述第二开关晶体管Te2为N型晶体管或P型晶体管。\n\n[0045]可选地，一所述像素驱动电路可同时驱动多个所述发光器件D1发光。具体地，多个所述发光器件D1并联连接后，再与所述驱动晶体管Td串联于所述第一电压端OVDD和所述第二电压端OVSS之间。\n\n[0046]如图2A是图1A和图1D所示的像素驱动电路的工作时序图；如图2B是图1B和图1E所示的像素驱动电路的工作时序图；如图2C是图1C和图1F所示的像素驱动电路的工作时序图。本发明的实施例还提供一种像素驱动电路的驱动方法，以用于驱动任一上述的像素驱动电路。\n\n[0047]具体地，所述像素驱动电路的驱动方法包括：重置阶段S1、侦测阶段S2、数据写入阶段S3及发光阶段S4。\n\n[0048]在所述重置阶段S1，利用所述第一重置晶体管Ts1将所述第一重置电压端VI1载入的第一重置电压信号Vcm加载至所述驱动晶体管Td的栅极，重置所述驱动晶体管Td的栅极电压；\n\n[0049]在所述侦测阶段S2，利用所述第一电压端OVDD、所述第二电压端OVSS及所述第一重置电压端VI1将所述驱动晶体管Td的所述阈值电压Vth通过所述第二电容C2耦合至所述第一电容C1中。\n\n[0050]在所述数据写入阶段S3，利用所述数据晶体管Tda将所述数据电压端Data载入的所述数据信号Vdata加载至所述驱动晶体管Td的栅极。可选地，所述数据信号Vdata通过所述第三电容C3耦合至所述驱动晶体管Td的栅极。\n\n[0051]在所述发光阶段S4，利用所述驱动晶体管Td产生所述驱动电流I以驱动所述发光器件D1发光。\n\n[0052]可选地，在所述侦测阶段S2与所述数据写入阶段S3之间还包括第一维持阶段H1，在所述数据写入阶段S3及所述发光阶段S4之间还包括第二维持阶段H2。其中，在所述第一维持阶段H1，所述驱动晶体管Td的栅极电压与在所述重置阶段S1时的栅极电压保持一致；在所述第二维持阶段H2，所述驱动晶体管Td的栅极电压与在所述数据写入阶段S3时的栅极电压保持一致。\n\n[0053]下面以所述驱动晶体管Td、所述第一重置晶体管Ts1、所述第二重置晶体管Ts2、所述第一开关晶体管Te1、所述第二开关晶体管Te2及所述数据晶体管Tda均为N型晶体管，所述驱动晶体管Td的源极与所述第二电压端OVSS电性连接，所述驱动晶体管Td的漏极与所述第一电压端OVDD电性连接为例，结合所述像素驱动电路的驱动方法对如图1A～图1F所示的所述像素驱动电路的工作原理进行说明。\n\n[0054]具体地，请继续参阅图1A、图1D和图2A。在所述重置阶段S1：所述第一发光控制信号线EM1载入的所述第一发光控制信号em1为高电平，所述重置控制信号线EM2载入的所述重置控制信号em2为高电平；所述第一重置晶体管Ts1响应所述重置控制信号em2导通，所述第一开关晶体管Te1响应所述第一发光控制信号em1导通；所述第一重置电压端VI1载入的所述第一重置电压信号Vcm经所述第一重置晶体管Ts1对第一节点G处的电位重置，从而使所述驱动晶体管Td的栅极电压Vg被重置。由于所述第一重置电压信号Vcm的电压值大于所述驱动晶体管Td的所述阈值电压Vth，且所述第一开关晶体管Te1导通，使得所述驱动晶体管Td的栅源电压Vgs大于所述驱动晶体管的所述阈值电压Vth，所述驱动晶体管Td导通，所述发光器件D1因所述驱动晶体管Td、所述第一开关晶体管Te1的导通而发光。其中，第二节点S对应所述驱动晶体管Td的所述源极、所述第一电容C1的所述第二端。\n\n[0055]在所述侦测阶段S2：所述第一发光控制信号线EM1载入的所述第一发光控制信号em1为低电平，所述重置控制信号线EM2载入的所述重置控制信号em2为高电平；所述第一重置晶体管Ts1保持导通，所述第一开关晶体管Te1截止，由于所述第一电容C1的存在，所述驱动晶体管Td保持导通；所述第一重置晶体管Ts1保持导通使得所述驱动晶体管Td的栅极电压Vg仍为Vcm(即Vg＝Vcm)，所述驱动晶体管Td导通和所述第一开关晶体管Te1截止使得所述第二电容C2的两端分别与所述第一电压端OVDD、所述第二电压端OVSS电性连接，所述第二电容C2充电使得所述驱动晶体管Td的所述源极的电位升高，直至所述驱动晶体管Td的源极电压Vs等于Vcm-Vth时(即Vs＝Vcm-Vth)，所述驱动晶体管Td的所述栅源电压Vgs等于所述驱动晶体管Td的所述阈值电压Vth(即Vg-Vs＝Vcm-Vcm+Vth＝Vth)，所述驱动晶体管Td截止，所述驱动晶体管Td的所述阈值电压Vth被存储至所述第一电容C1中。\n\n[0056]在所述第一维持阶段H1：所述第一发光控制信号em1、所述重置控制信号em2及所述数据写入控制信号wr均为低电平，所述驱动晶体管Td、所述第一重置晶体管Ts1、所述第一开关晶体管Te1及所述数据晶体管Tda均关断，所述驱动晶体管Td的所述栅源电压Vgs保持为所述阈值电压Vth。\n\n[0057]在所述数据写入阶段S3：所述数据写入控制信号线WR所载入的所述数据写入控制信号wr为高电平，所述数据晶体管Tda响应所述数据写入控制信号wr导通，所述数据信号Vdata被传输至所述驱动晶体管Td的所述栅极，所述驱动晶体管Td的栅极电压Vg由Vcm变为Vdata，变化量为Vdata-Vcm。相应地，由于所述第一电容C1和所述第二电容C2的存在，所述变化量Vdata-Vcm经所述第一电容C1和所述第二电容C2的分压作用，使得第二节点S处的电位变化，即使得所述驱动晶体管Td的源极电压Vs由Vcm-Vth变为Vcm-Vth+(Vdata-Vcm)*(C1/(C1+C2))。\n\n[0058]在所述第二维持阶段H2：所述第一发光控制信号em1、所述重置控制信号em2及所述数据写入控制信号wr均为低电平，所述驱动晶体管Td、所述第一重置晶体管Ts1、所述第一开关晶体管Te1及所述数据晶体管Tda均关断，所述驱动晶体管Td的栅极电压Vg保持为Vdata，所述驱动晶体管Td的源极电压Vs保持为Vcm-Vth+(Vdata-Vcm)*(C1/(C1+C2))。\n\n[0059]在所述发光阶段S4：所述第一发光控制信号em1为高电平，所述第一开关晶体管Te1导通，所述驱动晶体管Td产生驱动所述发光器件D1发光的驱动电流I。\n\n[0060]其中，由于Vg＝Vdata，Vs＝Vcm-Vth+(Vdata-Vcm)*(C1/(C1+C2))及I＝(CoxμmW/L)*(Vgs-Vth)2/2；Cox、μm、W、L分别表示晶体管的单位面积沟道电容、沟道迁移率、沟道宽和沟道长，则可得：\n\n[0061]Vgs＝Vg-Vs＝Vdata-Vcm+Vth-(Vdata-Vcm)*(C1/(C1+C2))；\n\n[0062]I＝(CoxμmW/L)*(Vdata-Vcm-(Vdata-Vcm)*(C1/(C1+C2)))2/2。\n\n[0063]因此，在所述驱动晶体管Td驱动所述发光器件D1发光时，可以降低所述驱动晶体管Td的所述阈值电压Vth对所述驱动电流I的影响，保证所述发光器件D1发光的稳定性。\n\n[0064]具体地，请继续参阅图1B、图1E和图2B。在所述重置阶段S1：所述第一发光控制信号线EM1载入的所述第一发光控制信号em1为高电平，所述重置控制信号线EM2载入的所述重置控制信号em2为高电平；所述第一重置晶体管Ts1、所述第二重置晶体管Ts2响应所述重置控制信号em2导通，所述第一开关晶体管Te1响应所述第一发光控制信号em1导通；所述第二重置电压端VI2载入的所述第二重置电压信号Vi经所述第二重置晶体管Ts2对第三节点M处的电位重置，所述第一重置电压端VI1载入的所述第一重置电压信号Vcm经所述第一重置晶体管Ts1对所述第一节点G处的电位重置，从而使所述驱动晶体管Td的栅极电压Vg被重置。由于所述第一重置电压信号Vcm的电压值大于所述驱动晶体管Td的所述阈值电压Vth，且所述第一开关晶体管Te1导通，使得所述驱动晶体管Td的栅源电压Vgs大于所述驱动晶体管的所述阈值电压Vth，所述驱动晶体管Td导通，所述发光器件D1因所述驱动晶体管Td、所述第一开关晶体管Te1的导通而发光。其中，第三节点M对应所述第三电容C3的所述第二端。\n\n[0065]在所述侦测阶段S2：所述第一发光控制信号线EM1载入的所述第一发光控制信号em1为低电平，所述重置控制信号线EM2载入的所述重置控制信号em2为高电平；所述第一重置晶体管Ts1、所述第二重置晶体管Ts2保持导通，所述第一开关晶体管Te1截止。所述第三电容C3两端的电压仍保持Vi和Vcm；且由于所述第一电容C1的存在，所述驱动晶体管Td保持导通；所述第一重置晶体管Ts1保持导通使得所述驱动晶体管Td的栅极电压Vg仍为Vcm(即Vg＝Vcm)，所述驱动晶体管Td导通和所述第一开关晶体管Te1截止使得所述第二电容C2的两端分别与所述第一电压端OVDD、所述第二电压端OVSS电性连接，所述第二电容C2充电使得所述驱动晶体管Td的所述源极的电位升高，直至所述驱动晶体管Td的源极电压Vs等于Vcm-Vth时(即Vs＝Vcm-Vth)，所述驱动晶体管Td的所述栅源电压Vgs等于所述驱动晶体管Td的所述阈值电压Vth(即Vg-Vs＝Vcm-Vcm+Vth＝Vth)，所述驱动晶体管Td截止，所述驱动晶体管Td的所述阈值电压Vth被存储至所述第一电容C1中。\n\n[0066]在所述第一维持阶段H1：所述第一发光控制信号em1、所述重置控制信号em2及所述数据写入控制信号wr均为低电平，所述驱动晶体管Td、所述第一重置晶体管Ts1、所述第二重置晶体管Ts2、所述第一开关晶体管Te1及所述数据晶体管Tda均关断，所述驱动晶体管Td的所述栅源电压Vgs保持为所述阈值电压Vth。\n\n[0067]在所述数据写入阶段S3：所述数据写入控制信号线WR所载入的所述数据写入控制信号wr为高电平，所述数据晶体管Tda响应所述数据写入控制信号wr导通；所述数据信号Vdata被传输至所述第三节点M处，所述第三节点M处的电压由Vi变为Vdata，变化量为Vdata-Vi。由于所述第三电容C3的存在，所述第一节点G处的电压(即所述驱动晶体管Td的所述栅极电压Vg)亦存在变化量Vdata-Vi，且由于所述第一电容C1和所述第二电容C2的存在，所述变化量Vdata-Vi经所述第一电容C1、所述第二电容C2和所述第三电容C3的分压作用，使得所述驱动晶体管Td的所述栅极电压Vg由Vcm变为Vcm+(Vdata-Vi)*(C3/((C1C2/(C1+C2))+C3))。相应地，由于所述第一节点G处存在变化量(Vdata-Vi)*(C3/((C1C2/(C1+C2))+C3))，所述第一电容C1和所述第二电容C2具有分压作用，使得所述驱动晶体管Td的所述源极电压Vs由Vcm-Vth变为Vcm-Vth+(Vdata-Vi)*(C3/((C1C2/(C1+C2))+C3))*(C1/(C1+C2))，即Vs＝Vcm-Vth+(Vdata-Vi)*(C3C1/(C1C2+C1C3+C2C3))。\n\n[0068]在所述第二维持阶段H2：所述第一发光控制信号em1、所述重置控制信号em2及所述数据写入控制信号wr均为低电平，所述驱动晶体管Td、所述第一重置晶体管Ts1、第二重置晶体管Ts2、所述第一开关晶体管Te1及所述数据晶体管Tda均关断，所述驱动晶体管Td的栅极电压Vg保持为Vcm+(Vdata-Vi)*(C3/((C1C2/(C1+C2))+C3))，所述驱动晶体管Td的源极电压Vs保持为Vcm-Vth+(Vdata-Vi)*(C3C1/(C1C2+C1C3+C2C3))。\n\n[0069]在所述发光阶段S4：所述第一发光控制信号em1为高电平，所述第一开关晶体管Te1导通，所述驱动晶体管Td产生驱动所述发光器件D1发光的驱动电流I。\n\n[0070]其中，由于Vg＝Vcm+(Vdata-Vi)*(C3/((C1C2/(C1+C2))+C3))，Vs＝Vcm-Vth+(Vdata-Vi)*(C3C1/(C1C2+C1C3+C2C3))，则可得：\n\n[0071]Vgs＝Vth+(Vdata-Vi)*[(C3/((C1C2/(C1+C2))+C3))-(C3C1/(C1C2+C1C3+C2C3))]；\n\n[0072]I＝(CoxμmW/L)*(Vgs-Vth)2/2＝(CoxμmW/L)*[(Vdata-Vi)*((C3/((C1C2/(C1+C2))+C3))-(C3C1/(C1C2+C1C3+C2C3)))]2/2。\n\n[0073]因此，在所述驱动晶体管Td驱动所述发光器件D1发光时，可以降低所述驱动晶体管Td的所述阈值电压Vth对所述驱动电流I的影响，保证所述发光器件D1发光的稳定性。\n\n[0074]具体地，请继续参阅图1C、图1F和图2C。在所述重置阶段S1：所述第一发光控制信号线EM1载入的所述第一发光控制信号em1为高电平，所述重置控制信号线EM2载入的所述重置控制信号em2为高电平，所述第二发光控制信号线EM3载入的所述第二发光控制信号em3为高电平；所述第一重置晶体管Ts1、所述第二重置晶体管Ts2响应所述重置控制信号em2导通，所述第一开关晶体管Te1响应所述第一发光控制信号em1导通，所述第二开关晶体管Te2响应所述第二发光控制信号em3导通；所述第二重置电压端VI2载入的所述第二重置电压信号Vi经所述第二重置晶体管Ts2对所述第三节点M处的电位重置，所述第一重置电压端VI1载入的所述第一重置电压信号Vcm经所述第一重置晶体管Ts1对所述第一节点G处的电位重置，从而使所述驱动晶体管Td的栅极电压Vg被重置。由于所述第一重置电压信号Vcm的电压值大于所述驱动晶体管Td的所述阈值电压Vth，且所述第一开关晶体管Te1导通，使得所述驱动晶体管Td的栅源电压Vgs大于所述驱动晶体管的所述阈值电压Vth，所述驱动晶体管Td导通，所述发光器件D1因所述驱动晶体管Td、所述第一开关晶体管Te1的导通而发光。\n\n[0075]在所述侦测阶段S2：所述第一发光控制信号线EM1载入的所述第一发光控制信号em1为低电平，所述重置控制信号线EM2载入的所述重置控制信号em2为高电平，所述第二发光控制信号线EM3载入的所述第二发光控制信号em3为高电平；所述第一重置晶体管Ts1、所述第二重置晶体管Ts2保持导通，所述第一开关晶体管Te1截止，所述第二开关晶体管Te2导通。所述第三电容C3两端的电压仍保持Vi和Vcm；且由于所述第一电容C1的存在，所述驱动晶体管Td保持导通；所述第一重置晶体管Ts1保持导通使得所述驱动晶体管Td的栅极电压Vg仍为Vcm(即Vg＝Vcm)，所述驱动晶体管Td导通和所述第一开关晶体管Te1截止使得所述第二电容C2的两端分别与所述第一电压端OVDD、所述第二电压端OVSS电性连接，所述第二电容C2充电使得所述驱动晶体管Td的所述源极的电位升高，直至所述驱动晶体管Td的源极电压Vs等于Vcm-Vth时(即Vs＝Vcm-Vth)，所述驱动晶体管Td的所述栅源电压Vgs等于所述驱动晶体管Td的所述阈值电压Vth(即Vg-Vs＝Vcm-Vcm+Vth＝Vth)，所述驱动晶体管Td截止，所述驱动晶体管Td的所述阈值电压Vth被存储至所述第一电容C1中。\n\n[0076]在所述第一维持阶段H1：所述第一发光控制信号em1、所述重置控制信号em2、所述第二发光控制信号em3及所述数据写入控制信号wr均为低电平，所述驱动晶体管Td、所述第一重置晶体管Ts1、所述第二重置晶体管Ts2、所述第一开关晶体管Te1及所述数据晶体管Tda均关断，所述驱动晶体管Td的所述栅源电压Vgs保持为所述阈值电压Vth。\n\n[0077]在所述数据写入阶段S3：所述数据写入控制信号线WR所载入的所述数据写入控制信号wr为高电平，所述数据晶体管Tda响应所述数据写入控制信号wr导通；所述数据信号Vdata被传输至所述第三节点M处，所述第三节点M处的电压由Vi变为Vdata，变化量为Vdata-Vi。由于所述第三电容C3的存在，所述第一节点G处的电压(即所述驱动晶体管Td的所述栅极电压Vg)亦存在变化量Vdata-Vi，且由于所述第一电容C1和所述第二电容C2的存在，所述变化量Vdata-Vi经所述第一电容C1、所述第二电容C2和所述第三电容C3的分压作用，使得所述驱动晶体管Td的所述栅极电压Vg由Vcm变为Vcm+(Vdata-Vi)*(C3/((C1C2/(C1+C2))+C3))。相应地，由于所述第一节点G处存在变化量(Vdata-Vi)*(C3/((C1C2/(C1+C2))+C3))，所述第一电容C1和所述第二电容C2具有分压作用，使得所述驱动晶体管Td的所述源极电压Vs由Vcm-Vth变为Vcm-Vth+(Vdata-Vi)*(C3/((C1C2/(C1+C2))+C3))*(C1/(C1+C2))，即Vs＝Vcm-Vth+(Vdata-Vi)*(C3C1/(C1C2+C1C3+C2C3))。\n\n[0078]其中，在所述数据写入阶段S3，由于所述第二发光控制信号em3为低电平，所述第二开关晶体管Te2截止，则所述驱动晶体管Td与所述第一电压端OVDD之间的电性连接被断开，可以降低所述第一电压端OVDD对所述驱动晶体管Td的所述源极电压Vs的影响，从而降低对所述第一电容C1存储的电压的影响，继而降低对所述驱动晶体管Td的所述栅极电压Vg的影响。\n\n[0079]在所述第二维持阶段H2：所述第一发光控制信号em1、所述重置控制信号em2、所述第二发光控制信号em3及所述数据写入控制信号wr均为低电平，所述驱动晶体管Td、所述第一重置晶体管Ts1、第二重置晶体管Ts2、所述第一开关晶体管Te1及所述数据晶体管Tda均关断，所述驱动晶体管Td的栅极电压Vg保持为Vcm+(Vdata-Vi)*(C3/((C1C2/(C1+C2))+C3))，所述驱动晶体管Td的源极电压Vs保持为Vcm-Vth+(Vdata-Vi)*(C3C1/(C1C2+C1C3+C2C3))。\n\n[0080]在所述发光阶段S4：所述第一发光控制信号em1为高电平，所述第二发光控制信号em3为高电平、所述第一开关晶体管Te1及所述第二开关晶体管Te2导通，所述驱动晶体管Td产生驱动所述发光器件D1发光的驱动电流I。\n\n[0081]其中，由于Vg＝Vcm+(Vdata-Vi)*(C3/((C1C2/(C1+C2))+C3))，Vs＝Vcm-Vth+(Vdata-Vi)*(C3C1/(C1C2+C1C3+C2C3))，则可得：\n\n[0082]Vgs＝Vth+(Vdata-Vi)*[(C3/((C1C2/(C1+C2))+C3))-(C3C1/(C1C2+C1C3+C2C3))]；\n\n[0083]I＝(CoxμmW/L)*(Vgs-Vth)2/2＝(CoxμmW/L)*[(Vdata-Vi)*((C3/((C1C2/(C1+C2))+C3))-(C3C1/(C1C2+C1C3+C2C3)))]2/2。\n\n[0084]因此，在所述驱动晶体管Td驱动所述发光器件D1发光时，可以降低所述驱动晶体管Td的所述阈值电压Vth对所述驱动电流I的影响，保证所述发光器件D1发光的稳定性。\n\n[0085]本发明的实施例还提供一种显示面板，所述显示面板包括任一上述的像素驱动电路。\n\n[0086]请继续参阅图3A～图3B是本发明实施例提供的显示面板的结构示意图；如图3C～图3D是沿图3B中的A-A’剖切的剖面图。如图4A～图4F是本发明的实施例提供的像素驱动电路的结构示意图。本发明的实施例还提供一种显示面板。可选地，所述显示面板包括自发光显示面板、量子点显示面板、柔性显示面板等。\n\n[0087]请继续参阅图3A～图3B，所述显示面板包括显示区300a和非显示区300b。\n\n[0088]可选地，所述非显示区300b包括位于所述显示区300a外围的第一非显示区3001a，以及，位于所述显示区300a内的第二非显示区3001b，如图3A所示。进一步地，所述显示面板还包括正对所述第二非显示区3001b设置的传感器。\n\n[0089]可选地，所述显示区300a包括主显示区3002a、透光显示区3002b及位于所述主显示区3002a与所述透光显示区3002b之间的过渡显示区3002c，所述非显示区300b位于所述主显示区3002a外侧，如图3B所示。进一步地，所述显示面板还包括正对所述透光显示区3002b设置的传感器。\n\n[0090]可选地，所述传感器包括指纹识别传感器、摄像头、结构光传感器、光线传感器等，以使所述显示面板通过所述传感器采集信号，从而使所述显示面板实现屏下指纹识别、屏下摄像头、屏下面部识别、屏下距离感知等屏下传感方案。\n\n[0091]所述显示面板包括多个发光器件D1及多个像素驱动电路，每一所述像素驱动电路与对应的所述发光器件D1连接，以用于驱动对应的所述发光器件D1发光。\n\n[0092]可选地，每一所述像素驱动电路与一所述发光器件D1连接，以利用一所述像素驱动电路驱动一所述发光器件D1发光。具体地，如图3A所示，在所述显示区300a内，利用一所述像素驱动电路驱动一所述发光器件D1发光。具体地，如图3B所示，在所述主显示区3002a内，利用一所述像素驱动电路驱动一所述发光器件D1发光。\n\n[0093]可选地，一所述像素驱动电路与多个所述发光器件D1连接，以利用一所述像素驱动电路驱动多个所述发光器件D1发光。具体地，如图3B所示，在所述透光显示区3002b和所述过渡显示区3002c，利用一所述像素驱动电路驱动多个所述发光器件D1发光，且驱动位于所述透光显示区3002b和所述过渡显示区3002c内的多个所述发光器件D1发光的所述像素驱动电路位于所述过渡显示区3002c内，以降低像素驱动电路对所述透光显示区3002b透光率的影响。\n\n[0094]可选地，所述发光器件D1包括有机发光二极管、次毫米发光二极管或微型发光二极管。进一步地，所述有机发光二极管包括倒置型有机发光二极管、正型发光二极管。\n\n[0095]请继续参阅图3C～图3D，每一所述发光器件D1包括阴极301、阳极302及位于所述阴极301与所述阳极302之间的发光层303。所述显示面板包括衬底304，所述发光器件D1及所述像素驱动电路均位于所述衬底304上。\n\n[0096]进一步地，所述发光器件D1为倒置型有机发光二极管，所述发光器件D1的所述阴极301与所述像素驱动电路连接，所述发光器件D1的所述阳极302位于所述发光层303远离所述衬底304的一侧，如图3C所示；或所述发光器件D1为正型有机发光二极管，所述发光器件D1的所述阳极302与所述像素驱动电路连接，所述发光器件D1的所述阴极301位于所述发光层303远离所述衬底304的一侧，如图3D所示。\n\n[0097]可选地，所述发光层303包括量子点材料、钙钛矿材料、荧光材料等，以提高所述发光器件D1的发光效率。\n\n[0098]请继续参阅图3C～图3D，所述显示面板还包括位于所述衬底304上的有源层3051、第一电极层、第二电极层、绝缘层306、平坦层307及像素定义层308。所述第一电极层包括与所述有源层3051对应的栅极3052，所述第二电极层包括与所述有源层3051电性连接的源极及漏极3053。其中，每一所述像素驱动电路包括多个晶体管，每一所述晶体管均包括有源层3051、栅极3052、源极及漏极3053。可选地，所述显示面板还包括第三电极层，所述第三电极层包括与所述栅极3052对应的电极部3054，以使所述电极部3054与所述栅极3052形成电容。\n\n[0099]可选地，所述有源层3051包括无机半导体材料或有机半导体材料。进一步地，所述无机半导体材料包括非晶硅半导体、多晶硅半导体、氧化物半导体等材料。\n\n[0100]可选地，所述显示面板还包括封装层、触控电极、色转换层等未示出部分。\n\n[0101]请继续参阅图4A～图4F，每一所述像素驱动电路包括驱动模块、重置补偿模块、数据写入模块及发光控制模块。\n\n[0102]所述驱动模块包括第一晶体管T1，所述第一晶体管T1用于产生驱动所述发光器件D1发光的驱动电流，所述第一晶体管T1与对应的所述发光器件D1串联于第一电压端OVDD与第二电压端OVSS之间。可选地，所述发光器件D1的阳极与所述第一电压端OVDD连接，所述第一晶体管T1的漏极与所述发光器件D1的阴极连接，所述第一晶体管T1的源极与所述第二电压端OVSS电性连接，如图4A～图4C所示。可选地，所述发光器件D1的阴极与所述第二电压端OVSS连接，所述第一晶体管T1的源极与所述发光器件D1的阳极电性连接，所述第一晶体管T1的漏极与所述第一电压端OVDD连接，如图4D～图4F所示。\n\n[0103]请继续参阅图4A～图4F，所述重置补偿模块包括第二晶体管T2、第一电容C1及第二电容C2；所述第二晶体管T2用于根据重置控制信号将第一重置电压信号加载至所述第一晶体管T1的栅极，所述第一电容C1用于存储所述第一晶体管T1的阈值电压，所述第二电容C2用于将所述阈值电压耦合至所述第一电容C1。\n\n[0104]具体地，所述第二晶体管T2的栅极与重置控制信号线EM2连接，所述第二晶体管T2的源极或漏极中的一者与第一重置电压端VI1连接，所述第二晶体管T2的所述源极或所述漏极中的另一者与所述第一晶体管T1的所述栅极连接。所述第一电容C1串联于所述第一晶体管T1的所述栅极与所述第一晶体管T1的所述源极之间，所述第二电容C2串联于所述第一晶体管T1的所述源极与所述第二电压端OVSS之间，从而使所述第二电容C2串联于所述第一电容C1与所述第二电压端OVSS之间。\n\n[0105]其中，所述重置控制信号线EM2被配置为向所述第二晶体管T2提供所述重置控制信号；所述第一重置电压端VI1被配置为向所述第二晶体管T2提供所述第一重置电压信号，所述第一重置电压信号的电压值大于所述第一晶体管T1的所述阈值电压。\n\n[0106]请继续参阅图4A～图4F，所述数据写入模块包括第三晶体管T3，所述第三晶体管T3用于根据数据写入控制信号将所述数据信号加载至所述第一晶体管T1的所述栅极。具体地，所述第三晶体管T3的栅极与数据写入控制信号线WR连接，所述第三晶体管T3的源极或漏极中的一者与数据电压端Data连接，所述第三晶体管T3的所述源极或所述漏极中的另一者与所述第一晶体管T1的所述栅极连接。其中，所述数据写入控制信号线WR被配置为向所述第三晶体管T3提供所述数据写入控制信号，所述数据电压端Data被配置为向所述第三晶体管T3提供所述数据信号。\n\n[0107]进一步地，请参阅图4B～图4C及图4E～图4F，所述重置补偿模块还包括第五晶体管T5及第三电容C3。所述第三电容C3用于将所述数据信号耦合至所述第一晶体管T1的栅极；所述第五晶体管T5用于和所述第二晶体管T2根据所述重置控制信号重置所述第三电容C3两端的电压。\n\n[0108]具体地，所述第三电容C3串联于所述第三晶体管T3的所述源极或所述漏极中的另一者与所述第一晶体管T1的所述栅极之间；所述第五晶体管T5的栅极与所述重置控制信号线EM2连接，所述第五晶体管T5的源极或漏极中的一者与第二重置电压端VI2连接，所述第五晶体管T5的所述源极或所述漏极中的另一者与所述第三晶体管T3的所述源极或所述漏极中与所述第三电容C3连接的一者连接。所述重置控制信号线EM2被配置为向所述第二晶体管T2、所述第五晶体管T5提供所述重置控制信号，所述第二重置电压端VI2被配置为向所述第五晶体管T5提供第二重置电压信号。\n\n[0109]请继续参阅图4A～图4F，所述发光控制模块包括第四晶体管T4，所述第四晶体管T4用于根据第一发光控制信号控制所述阈值电压通过所述第二电容C2耦合至所述第一电容C1。具体地，所述第四晶体管T4的栅极与第一发光控制信号线EM1连接，所述第四晶体管T4的源极或漏极中的一者与所述第一晶体管T1的所述源极连接，所述第四晶体管T4的所述源极或所述漏极中的另一者与所述第二电压端OVSS连接，如图4A～图4C所示；或，所述第四晶体管T4的所述源极或所述漏极中的另一者与所述发光器件D1的所述阳极连接，如图4D～图4F所示。其中，所述第一发光控制信号线EM1被配置为向所述第四晶体管T4提供所述第一发光控制信号。\n\n[0110]进一步地，请继续参阅图4C和图4F，所述发光控制模块还包括第六晶体管T6，所述第六晶体管T6用于根据第二发光控制信号断开所述第一电压端OVDD与所述第一晶体管T1的电性连接。具体地，所述第六晶体管T6的栅极与第二发光控制信号线EM3连接，所述第六晶体管T6的源极或漏极中的一者与所述第一晶体管T1的所述漏极连接，所述第六晶体管T6的所述源极或所述漏极中的另一者与所述发光器件D1的所述阴极连接，如图4C所示；或，所述第六晶体管T6的所述源极或所述漏极中的另一者与所述第一电压端OVDD连接，如图4F所示。其中，所述第二发光控制信号线EM3被配置为向所述第六晶体管T6提供所述第二发光控制信号。\n\n[0111]可选地，所述第一晶体管T1、所述第二晶体管T2、所述第三晶体管T3、所述第四晶体管T4、所述第五晶体管T5及所述第六晶体管T6包括场效应晶体管。进一步地，所述场效应晶体管包括薄膜晶体管。可选地，所述第一晶体管T1、所述第二晶体管T2、所述第三晶体管T3、所述第四晶体管T4、所述第五晶体管T5及所述第六晶体管T6包括N型应晶体管、P型晶体管。\n\n[0112]本发明的实施例还提供一种显示装置，所述显示装置包括上述的任一像素驱动电路或上述的任一显示面板。\n\n[0113]所述显示装置包括固定终端如电视、台式电脑，移动终端如手机、笔记本电脑，以及可穿戴设备如手环、VR(虚拟显示)设备、AR(增强显示)设备。\n\n[0114]本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。', '技术领域\n\n[0001]本发明涉及显示技术领域，具体涉及一种像素驱动电路、一种显示面板及一种显示装置。\n\n背景技术\n\n[0002]像素驱动电路中驱动发光器件发光的驱动电流会受驱动晶体管的阈值电压的影响，导致发光器件出现亮度不均的问题，影响显示面板的显示质量。\n\n发明内容\n\n[0003]本发明实施例提供一种像素驱动电路、一种显示面板及一种显示装置，可以降低驱动晶体管的阈值电压对驱动电流的影响。\n\n[0004]本发明实施例提供一种像素驱动电路，所述像素驱动电路包括发光器件、驱动晶体管、第一重置晶体管、第一电容及第二电容。所述驱动晶体管与所述发光器件串联于第一电压端和第二电压端之间，所述第一重置晶体管连接于第一重置电压端与所述驱动晶体管的栅极之间，所述第一电容的第一端与所述驱动晶体管的所述栅极连接，所述第一电容的第二端与所述驱动晶体管的源极或漏极中的一者连接，所述第二电容的第一端与所述第一电容的所述第二端连接，所述第二电容的第二端与第二电压端连接。\n\n[0005]本发明的实施例还提供一种显示面板，所述显示面板包括多个发光器件及多个像素驱动电路；每一所述像素驱动电路用于驱动对应的所述发光器件发光；每一所述像素驱动电路包括第一晶体管及重置补偿模块，所述重置补偿模块包括第二晶体管、第一电容及第二电容；所述第二晶体管用于根据重置控制信号将第一重置电压信号加载至所述驱动晶体管的栅极，所述第一电容用于存储所述驱动晶体管的阈值电压，所述第二电容用于将所述阈值电压耦合至所述第一电容。\n\n[0006]本发明的实施例还提供一种显示装置，所述显示装置包括任一上述的像素驱动电路或任一上述的显示面板。\n\n[0007]在本发明实施例提供的像素驱动电路、显示面板及显示装置中，所述像素驱动电路包括发光器件、驱动晶体管、第一重置晶体管、第一电容及第二电容。所述驱动晶体管与所述发光器件串联于第一电压端和第二电压端之间，所述第一重置晶体管连接于第一重置电压端与所述驱动晶体管的栅极之间，所述第一电容的第一端与所述驱动晶体管的所述栅极连接，所述第一电容的第二端与所述驱动晶体管的源极或漏极中的一者连接，所述第二电容的第一端与所述第一电容的所述第二端连接，所述第二电容的第二端与第二电压端连接。所述像素驱动电路可利用所述第一电压端、所述第二电压端及所述第一重置电压端将所述驱动晶体管的阈值电压通过所述第二电容耦合至所述第一电容，从而在所述驱动晶体管驱动所述发光器件发光时，降低所述驱动晶体管的阈值电压对所述驱动晶体管驱动电流的影响，保证所述发光器件发光的稳定性。\n\n附图说明\n\n[0008]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0009]图1A～图1F是本发明实施例提供的像素驱动电路的结构示意图；\n\n[0010]图2A是图1A和图1D所示的像素驱动电路的工作时序图；\n\n[0011]图2B是图1B和图1E所示的像素驱动电路的工作时序图；\n\n[0012]图2C是图1C和图1F所示的像素驱动电路的工作时序图；\n\n[0013]图3A～图3B是本发明实施例提供的显示面板的结构示意图；\n\n[0014]图3C～图3D是沿图3B中的A-A’剖切的剖面图；\n\n[0015]图4A～图4F是本发明的实施例提供的像素驱动电路的结构示意图。\n\n具体实施方式\n\n[0016]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本发明，并不用于限制本发明。在本发明中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0017]如图1A～图1F是本发明实施例提供的像素驱动电路的结构示意图；本发明的实施例提供一种像素驱动电路，所述像素驱动电路包括发光器件D1、驱动晶体管Td、第一重置晶体管Ts1、第一电容C1及第二电容C2。\n\n[0018]可选地，所述发光器件D1包括有机发光二极管、次毫米发光二极管或微型发光二极管。\n\n[0019]进一步地，所述有机发光二极管包括倒置型有机发光二极管，所述倒置型有机发光二极管串联于第一电压端OVDD与所述驱动晶体管Td的漏极之间，如图1A～图1C所示。\n\n[0020]进一步地，所述有机发光二极管包括正型有机发光二极管，所述正型有机发光二极管串联于第二电压端OVSS与所述驱动晶体管Td的源极之间，如图1D～图1F所示。\n\n[0021]请继续参阅图1A～图1F，所述驱动晶体管Td与所述发光器件D1串联在第一电压端OVDD与第二电压端OVSS之间，所述驱动晶体管Td用于根据数据信号Vdata产生驱动所述发光器件D1发光的驱动电流I。所述第一电压端OVDD载入的第一电压信号的电压值大于所述第二电压端OVSS载入的第二电压信号的电压值。\n\n[0022]可选地，所述驱动晶体管Td包括场效应晶体管；进一步地，所述场效应晶体管包括薄膜晶体管。可选地，所述驱动晶体管Td包括无机半导体层或有机半导体层。进一步地，所述无机半导体层包括非晶硅半导体、多晶硅半导体、氧化物半导体等材料。可选地，所述驱动晶体管Td为N型晶体管或P型晶体管。\n\n[0023]所述第一重置晶体管Ts1连接于第一重置电压端VI1与所述驱动晶体管Td的栅极之间，以通过所述第一重置晶体管Ts1重置所述驱动晶体管Td的栅极电压Vg。其中，所述第一电压端OVDD载入的第一电压信号的电压值大于所述第一重置电压端VI1载入的第一重置电压信号Vcm的电压值；所述第一重置电压端VI1载入的所述第一重置电压信号Vcm的电压值大于所述驱动晶体管Td的所述阈值电压Vth。\n\n[0024]具体地，所述第一重置晶体管Ts1的栅极与重置控制信号线EM2连接，所述第一重置晶体管Ts1的源极或漏极中的一者与所述第一重置电压端VI1连接，所述第一重置晶体管Ts1的所述源极或所述漏极中的另一者与所述驱动晶体管Td的所述栅极连接。其中，所述重置控制信号线EM2被配置为向所述第一重置晶体管Ts1提供重置控制信号em2。\n\n[0025]所述第一电容C1串联于所述驱动晶体管Td的所述栅极与所述驱动晶体管Td的所述源极或所述漏极中的一者之间，所述第一电容C1用于存储所述驱动晶体管Ts1的阈值电压Vth。\n\n[0026]具体地，所述第一电容C1的第一端与所述驱动晶体管Td的所述栅极连接，所述第一电容C1的第二端与所述驱动晶体管Td的所述源极连接。\n\n[0027]所述第二电容C2串联于所述第二电压端OVSS与所述驱动晶体管Td的所述源极或所述漏极中与所述第一电容C1连接的一者之间，所述第二电容C2用于将所述驱动晶体管Td的所述阈值电压Vth耦合至所述第一电容C1中。\n\n[0028]具体地，所述第二电容C2的第一端与所述第一电容C1的所述第二端连接，所述第二电容C2的所述第二端与所述第二电压端OVSS连接。\n\n[0029]在所述像素驱动电路中，所述第一重置电压端VI1载入的第一重置电压信号Vcm经所述第一重置晶体管Ts1传输至所述驱动晶体管Td的所述栅极，实现对所述驱动晶体管Td的所述栅极电压Vg的重置。利用所述第一重置电压端VI1、所述第一电压端OVDD及所述第二电压端OVSS，使所述驱动晶体管Td的所述阈值电压Vth经所述第二电容C2耦合至所述第一电容C1中，以在所述驱动晶体管Td在根据所述数据信号Vdata产生驱动所述发光器件D1发光的驱动电流I时，降低所述阈值电压Vth对所述驱动电流I的影响，保证所述发光器件D1的发光稳定性。\n\n[0030]请继续参阅图1A～图1F，所述像素驱动电路还包括数据晶体管Tda，所述数据晶体管Tda连接于数据电压端Data与所述驱动晶体管Td的所述栅极之间，所述数据晶体管Tda用于将所述数据信号Vdata传输至所述驱动晶体管Td的所述栅极。\n\n[0031]具体地，所述数据晶体管Tda的栅极与数据写入控制信号线WR连接，所述数据晶体管Tda的源极或漏极中的一者与所述数据电压端Data连接，所述数据晶体管Tda的所述源极或所述漏极中的另一者与所述驱动晶体管Td的所述栅极连接。其中，所述数据写入控制信号线WR被配置为向所述数据晶体管Tda提供数据写入控制信号wr。\n\n[0032]可选地，所述数据晶体管Tda的所述源极或所述漏极中的另一者与所述驱动晶体管Td的所述栅极直接连接，如图1A和图1D所示。\n\n[0033]可选地，所述数据晶体管Tda的所述源极或所述漏极中的另一者与所述驱动晶体管Td的所述栅极间接连接，如图1B～图1C及图1E～图1F所示。具体地，所述像素驱动电路还包括第三电容C3，所述第三电容C3串联于所述数据晶体管Tda的所述源极或所述漏极中的另一者与所述驱动晶体管Td的所述栅极之间，以用于将所述数据信号Vdata耦合至所述驱动晶体管Td的所述栅极。即所述第三电容C3的第一端与所述驱动晶体管Td的所述栅极连接，所述第三电容C3的第二端与所述数据晶体管Tda的所述源极或所述漏极中的另一者连接。\n\n[0034]进一步地，所述像素驱动电路还包括第二重置晶体管Ts2，所述第二重置晶体管Ts2连接于第二重置电压端VI2与所述第三电容C3的所述第二端之间，以用于和所述第一重置晶体管Ts1重置所述第三电容C3的两端电压。\n\n[0035]具体地，所述第二重置晶体管Ts2的栅极与所述重置控制信号线EM2连接，所述第二重置晶体管Ts2的源极或漏极中的一者与所述第二重置电压端VI2连接，所述第二重置晶体管Ts2的所述源极或所述漏极中的另一者与所述第三电容C3的所述第二端连接。其中，所述重置控制信号线EM2被配置为向所述第一重置晶体管Ts1、所述第二重置晶体管Ts2提供所述重置控制信号em2；所述第一电压端OVDD载入的第一电压信号的电压值大于所述第二重置电压端VI2载入的第二重置电压信号Vi的电压值。\n\n[0036]请继续参阅图1A～图1F，所述像素驱动电路还包括第一开关晶体管Te1，所述第一开关晶体管Te1连接于所述第二电压端OVSS与所述驱动晶体管Td的所述源极或所述漏极中与所述第一电容C1的所述第二端连接的一者之间，所述第一开关晶体管Te1用于在所述第二电容C2将所述驱动晶体管Td的所述阈值电压Vth耦合至所述第一电容C1中时，断开所述驱动晶体管Td与所述第二电压端OVSS的电性连接。\n\n[0037]具体地，所述第一开关晶体管Te1的栅极与第一发光控制信号线EM1连接，所述第一开关晶体管Te1的源极或漏极中的一者与所述驱动晶体管Td的源极、所述第一电容C1的所述第二端、所述第二电容C2的所述第一端连接，所述第一开关晶体管Te1的所述源极或所述漏极中的另一者与所述第二电压端OVSS、所述第二电容C2的所述第二端连接。其中，所述第一发光控制信号线EM1被配置为向所述第一开关晶体管Te1提供第一发光控制信号em1。\n\n[0038]可选地，所述第一开关晶体管Te1的所述源极或所述漏极中的另一者与所述第二电压端OVSS、所述第二电容C2的所述第二端直接连接，如图1A～图1C所示。\n\n[0039]可选地，所述第一开关晶体管Te1的所述源极或所述漏极中的另一者与所述第二电压端OVSS、所述第二电容C2的所述第二端间接连接，如图1D～图1F所示。具体地，所述第一开关晶体管Te1的所述源极或所述漏极中的另一者与所述发光器件D1的阳极连接，所述发光器件D1的阴极与所述第二电压端OVSS、所述第二电容C2的所述第二端直接连接。\n\n[0040]请继续参阅图1C和图1F，所述像素驱动电路还包括第二开关晶体管Te2，所述第二开关晶体管Te2连接于所述驱动晶体管Td的所述源极或所述漏极中的另一者与所述第一电压端OVDD之间，所述第二开光晶体管Te2用于在将所述数据信号Vdata传输至所述驱动晶体管Td的所述栅极时，断开所述第一电压端OVDD与所述驱动晶体管Td的电性连接，以降低所述第一电压端OVDD对所述第一电容C1存储的电压的影响。\n\n[0041]具体地，所述第二开关晶体管Te2的栅极与第二发光控制信号线EM3，所述第二开关晶体管Te2的源极或漏极中的一者与所述驱动晶体管Td的所述漏极连接，所述第二开关晶体管Te2的所述源极或所述漏极中的另一者与所述第一电压端OVDD连接。其中，所述第二发光控制信号线EM3被配置为向所述第二开关晶体管Te2提供第二发光控制信号em3。\n\n[0042]可选地，所述第二开关晶体管Te2的所述源极或所述漏极中的另一者与所述第一电压端OVDD间接连接，如图1C所示。具体地，所述发光器件D1的阳极与所述第一电压端OVDD连接，所述第二开关晶体管Te2的所述源极或所述漏极中的另一者与所述发光器件D1的阴极连接。\n\n[0043]可选地，所述第二开关晶体管Te2的所述源极或所述漏极中的另一者与所述第一电压端OVDD直接连接，如图1F所示。\n\n[0044]可选地，所述第一重置晶体管Ts1、所述第二重置晶体管Ts2、所述数据晶体管Tda、所述第一开关晶体管Te1及所述第二开关晶体管Te2包括场效应晶体管；进一步地，所述场效应晶体管包括薄膜晶体管。可选地，所述第一重置晶体管Ts1、所述第二重置晶体管Ts2、所述数据晶体管Tda、所述第一开关晶体管Te1及所述第二开关晶体管Te2为N型晶体管或P型晶体管。\n\n[0045]可选地，一所述像素驱动电路可同时驱动多个所述发光器件D1发光。具体地，多个所述发光器件D1并联连接后，再与所述驱动晶体管Td串联于所述第一电压端OVDD和所述第二电压端OVSS之间。\n\n[0046]如图2A是图1A和图1D所示的像素驱动电路的工作时序图；如图2B是图1B和图1E所示的像素驱动电路的工作时序图；如图2C是图1C和图1F所示的像素驱动电路的工作时序图。本发明的实施例还提供一种像素驱动电路的驱动方法，以用于驱动任一上述的像素驱动电路。\n\n[0047]具体地，所述像素驱动电路的驱动方法包括：重置阶段S1、侦测阶段S2、数据写入阶段S3及发光阶段S4。\n\n[0048]在所述重置阶段S1，利用所述第一重置晶体管Ts1将所述第一重置电压端VI1载入的第一重置电压信号Vcm加载至所述驱动晶体管Td的栅极，重置所述驱动晶体管Td的栅极电压；\n\n[0049]在所述侦测阶段S2，利用所述第一电压端OVDD、所述第二电压端OVSS及所述第一重置电压端VI1将所述驱动晶体管Td的所述阈值电压Vth通过所述第二电容C2耦合至所述第一电容C1中。\n\n[0050]在所述数据写入阶段S3，利用所述数据晶体管Tda将所述数据电压端Data载入的所述数据信号Vdata加载至所述驱动晶体管Td的栅极。可选地，所述数据信号Vdata通过所述第三电容C3耦合至所述驱动晶体管Td的栅极。\n\n[0051]在所述发光阶段S4，利用所述驱动晶体管Td产生所述驱动电流I以驱动所述发光器件D1发光。\n\n[0052]可选地，在所述侦测阶段S2与所述数据写入阶段S3之间还包括第一维持阶段H1，在所述数据写入阶段S3及所述发光阶段S4之间还包括第二维持阶段H2。其中，在所述第一维持阶段H1，所述驱动晶体管Td的栅极电压与在所述重置阶段S1时的栅极电压保持一致；在所述第二维持阶段H2，所述驱动晶体管Td的栅极电压与在所述数据写入阶段S3时的栅极电压保持一致。\n\n[0053]下面以所述驱动晶体管Td、所述第一重置晶体管Ts1、所述第二重置晶体管Ts2、所述第一开关晶体管Te1、所述第二开关晶体管Te2及所述数据晶体管Tda均为N型晶体管，所述驱动晶体管Td的源极与所述第二电压端OVSS电性连接，所述驱动晶体管Td的漏极与所述第一电压端OVDD电性连接为例，结合所述像素驱动电路的驱动方法对如图1A～图1F所示的所述像素驱动电路的工作原理进行说明。\n\n[0054]具体地，请继续参阅图1A、图1D和图2A。在所述重置阶段S1：所述第一发光控制信号线EM1载入的所述第一发光控制信号em1为高电平，所述重置控制信号线EM2载入的所述重置控制信号em2为高电平；所述第一重置晶体管Ts1响应所述重置控制信号em2导通，所述第一开关晶体管Te1响应所述第一发光控制信号em1导通；所述第一重置电压端VI1载入的所述第一重置电压信号Vcm经所述第一重置晶体管Ts1对第一节点G处的电位重置，从而使所述驱动晶体管Td的栅极电压Vg被重置。由于所述第一重置电压信号Vcm的电压值大于所述驱动晶体管Td的所述阈值电压Vth，且所述第一开关晶体管Te1导通，使得所述驱动晶体管Td的栅源电压Vgs大于所述驱动晶体管的所述阈值电压Vth，所述驱动晶体管Td导通，所述发光器件D1因所述驱动晶体管Td、所述第一开关晶体管Te1的导通而发光。其中，第二节点S对应所述驱动晶体管Td的所述源极、所述第一电容C1的所述第二端。\n\n[0055]在所述侦测阶段S2：所述第一发光控制信号线EM1载入的所述第一发光控制信号em1为低电平，所述重置控制信号线EM2载入的所述重置控制信号em2为高电平；所述第一重置晶体管Ts1保持导通，所述第一开关晶体管Te1截止，由于所述第一电容C1的存在，所述驱动晶体管Td保持导通；所述第一重置晶体管Ts1保持导通使得所述驱动晶体管Td的栅极电压Vg仍为Vcm(即Vg＝Vcm)，所述驱动晶体管Td导通和所述第一开关晶体管Te1截止使得所述第二电容C2的两端分别与所述第一电压端OVDD、所述第二电压端OVSS电性连接，所述第二电容C2充电使得所述驱动晶体管Td的所述源极的电位升高，直至所述驱动晶体管Td的源极电压Vs等于Vcm-Vth时(即Vs＝Vcm-Vth)，所述驱动晶体管Td的所述栅源电压Vgs等于所述驱动晶体管Td的所述阈值电压Vth(即Vg-Vs＝Vcm-Vcm+Vth＝Vth)，所述驱动晶体管Td截止，所述驱动晶体管Td的所述阈值电压Vth被存储至所述第一电容C1中。\n\n[0056]在所述第一维持阶段H1：所述第一发光控制信号em1、所述重置控制信号em2及所述数据写入控制信号wr均为低电平，所述驱动晶体管Td、所述第一重置晶体管Ts1、所述第一开关晶体管Te1及所述数据晶体管Tda均关断，所述驱动晶体管Td的所述栅源电压Vgs保持为所述阈值电压Vth。\n\n[0057]在所述数据写入阶段S3：所述数据写入控制信号线WR所载入的所述数据写入控制信号wr为高电平，所述数据晶体管Tda响应所述数据写入控制信号wr导通，所述数据信号Vdata被传输至所述驱动晶体管Td的所述栅极，所述驱动晶体管Td的栅极电压Vg由Vcm变为Vdata，变化量为Vdata-Vcm。相应地，由于所述第一电容C1和所述第二电容C2的存在，所述变化量Vdata-Vcm经所述第一电容C1和所述第二电容C2的分压作用，使得第二节点S处的电位变化，即使得所述驱动晶体管Td的源极电压Vs由Vcm-Vth变为Vcm-Vth+(Vdata-Vcm)*(C1/(C1+C2))。\n\n[0058]在所述第二维持阶段H2：所述第一发光控制信号em1、所述重置控制信号em2及所述数据写入控制信号wr均为低电平，所述驱动晶体管Td、所述第一重置晶体管Ts1、所述第一开关晶体管Te1及所述数据晶体管Tda均关断，所述驱动晶体管Td的栅极电压Vg保持为Vdata，所述驱动晶体管Td的源极电压Vs保持为Vcm-Vth+(Vdata-Vcm)*(C1/(C1+C2))。\n\n[0059]在所述发光阶段S4：所述第一发光控制信号em1为高电平，所述第一开关晶体管Te1导通，所述驱动晶体管Td产生驱动所述发光器件D1发光的驱动电流I。\n\n[0060]其中，由于Vg＝Vdata，Vs＝Vcm-Vth+(Vdata-Vcm)*(C1/(C1+C2))及I＝(CoxμmW/L)*(Vgs-Vth)2/2；Cox、μm、W、L分别表示晶体管的单位面积沟道电容、沟道迁移率、沟道宽和沟道长，则可得：\n\n[0061]Vgs＝Vg-Vs＝Vdata-Vcm+Vth-(Vdata-Vcm)*(C1/(C1+C2))；\n\n[0062]I＝(CoxμmW/L)*(Vdata-Vcm-(Vdata-Vcm)*(C1/(C1+C2)))2/2。\n\n[0063]因此，在所述驱动晶体管Td驱动所述发光器件D1发光时，可以降低所述驱动晶体管Td的所述阈值电压Vth对所述驱动电流I的影响，保证所述发光器件D1发光的稳定性。\n\n[0064]具体地，请继续参阅图1B、图1E和图2B。在所述重置阶段S1：所述第一发光控制信号线EM1载入的所述第一发光控制信号em1为高电平，所述重置控制信号线EM2载入的所述重置控制信号em2为高电平；所述第一重置晶体管Ts1、所述第二重置晶体管Ts2响应所述重置控制信号em2导通，所述第一开关晶体管Te1响应所述第一发光控制信号em1导通；所述第二重置电压端VI2载入的所述第二重置电压信号Vi经所述第二重置晶体管Ts2对第三节点M处的电位重置，所述第一重置电压端VI1载入的所述第一重置电压信号Vcm经所述第一重置晶体管Ts1对所述第一节点G处的电位重置，从而使所述驱动晶体管Td的栅极电压Vg被重置。由于所述第一重置电压信号Vcm的电压值大于所述驱动晶体管Td的所述阈值电压Vth，且所述第一开关晶体管Te1导通，使得所述驱动晶体管Td的栅源电压Vgs大于所述驱动晶体管的所述阈值电压Vth，所述驱动晶体管Td导通，所述发光器件D1因所述驱动晶体管Td、所述第一开关晶体管Te1的导通而发光。其中，第三节点M对应所述第三电容C3的所述第二端。\n\n[0065]在所述侦测阶段S2：所述第一发光控制信号线EM1载入的所述第一发光控制信号em1为低电平，所述重置控制信号线EM2载入的所述重置控制信号em2为高电平；所述第一重置晶体管Ts1、所述第二重置晶体管Ts2保持导通，所述第一开关晶体管Te1截止。所述第三电容C3两端的电压仍保持Vi和Vcm；且由于所述第一电容C1的存在，所述驱动晶体管Td保持导通；所述第一重置晶体管Ts1保持导通使得所述驱动晶体管Td的栅极电压Vg仍为Vcm(即Vg＝Vcm)，所述驱动晶体管Td导通和所述第一开关晶体管Te1截止使得所述第二电容C2的两端分别与所述第一电压端OVDD、所述第二电压端OVSS电性连接，所述第二电容C2充电使得所述驱动晶体管Td的所述源极的电位升高，直至所述驱动晶体管Td的源极电压Vs等于Vcm-Vth时(即Vs＝Vcm-Vth)，所述驱动晶体管Td的所述栅源电压Vgs等于所述驱动晶体管Td的所述阈值电压Vth(即Vg-Vs＝Vcm-Vcm+Vth＝Vth)，所述驱动晶体管Td截止，所述驱动晶体管Td的所述阈值电压Vth被存储至所述第一电容C1中。\n\n[0066]在所述第一维持阶段H1：所述第一发光控制信号em1、所述重置控制信号em2及所述数据写入控制信号wr均为低电平，所述驱动晶体管Td、所述第一重置晶体管Ts1、所述第二重置晶体管Ts2、所述第一开关晶体管Te1及所述数据晶体管Tda均关断，所述驱动晶体管Td的所述栅源电压Vgs保持为所述阈值电压Vth。\n\n[0067]在所述数据写入阶段S3：所述数据写入控制信号线WR所载入的所述数据写入控制信号wr为高电平，所述数据晶体管Tda响应所述数据写入控制信号wr导通；所述数据信号Vdata被传输至所述第三节点M处，所述第三节点M处的电压由Vi变为Vdata，变化量为Vdata-Vi。由于所述第三电容C3的存在，所述第一节点G处的电压(即所述驱动晶体管Td的所述栅极电压Vg)亦存在变化量Vdata-Vi，且由于所述第一电容C1和所述第二电容C2的存在，所述变化量Vdata-Vi经所述第一电容C1、所述第二电容C2和所述第三电容C3的分压作用，使得所述驱动晶体管Td的所述栅极电压Vg由Vcm变为Vcm+(Vdata-Vi)*(C3/((C1C2/(C1+C2))+C3))。相应地，由于所述第一节点G处存在变化量(Vdata-Vi)*(C3/((C1C2/(C1+C2))+C3))，所述第一电容C1和所述第二电容C2具有分压作用，使得所述驱动晶体管Td的所述源极电压Vs由Vcm-Vth变为Vcm-Vth+(Vdata-Vi)*(C3/((C1C2/(C1+C2))+C3))*(C1/(C1+C2))，即Vs＝Vcm-Vth+(Vdata-Vi)*(C3C1/(C1C2+C1C3+C2C3))。\n\n[0068]在所述第二维持阶段H2：所述第一发光控制信号em1、所述重置控制信号em2及所述数据写入控制信号wr均为低电平，所述驱动晶体管Td、所述第一重置晶体管Ts1、第二重置晶体管Ts2、所述第一开关晶体管Te1及所述数据晶体管Tda均关断，所述驱动晶体管Td的栅极电压Vg保持为Vcm+(Vdata-Vi)*(C3/((C1C2/(C1+C2))+C3))，所述驱动晶体管Td的源极电压Vs保持为Vcm-Vth+(Vdata-Vi)*(C3C1/(C1C2+C1C3+C2C3))。\n\n[0069]在所述发光阶段S4：所述第一发光控制信号em1为高电平，所述第一开关晶体管Te1导通，所述驱动晶体管Td产生驱动所述发光器件D1发光的驱动电流I。\n\n[0070]其中，由于Vg＝Vcm+(Vdata-Vi)*(C3/((C1C2/(C1+C2))+C3))，Vs＝Vcm-Vth+(Vdata-Vi)*(C3C1/(C1C2+C1C3+C2C3))，则可得：\n\n[0071]Vgs＝Vth+(Vdata-Vi)*[(C3/((C1C2/(C1+C2))+C3))-(C3C1/(C1C2+C1C3+C2C3))]；\n\n[0072]I＝(CoxμmW/L)*(Vgs-Vth)2/2＝(CoxμmW/L)*[(Vdata-Vi)*((C3/((C1C2/(C1+C2))+C3))-(C3C1/(C1C2+C1C3+C2C3)))]2/2。\n\n[0073]因此，在所述驱动晶体管Td驱动所述发光器件D1发光时，可以降低所述驱动晶体管Td的所述阈值电压Vth对所述驱动电流I的影响，保证所述发光器件D1发光的稳定性。\n\n[0074]具体地，请继续参阅图1C、图1F和图2C。在所述重置阶段S1：所述第一发光控制信号线EM1载入的所述第一发光控制信号em1为高电平，所述重置控制信号线EM2载入的所述重置控制信号em2为高电平，所述第二发光控制信号线EM3载入的所述第二发光控制信号em3为高电平；所述第一重置晶体管Ts1、所述第二重置晶体管Ts2响应所述重置控制信号em2导通，所述第一开关晶体管Te1响应所述第一发光控制信号em1导通，所述第二开关晶体管Te2响应所述第二发光控制信号em3导通；所述第二重置电压端VI2载入的所述第二重置电压信号Vi经所述第二重置晶体管Ts2对所述第三节点M处的电位重置，所述第一重置电压端VI1载入的所述第一重置电压信号Vcm经所述第一重置晶体管Ts1对所述第一节点G处的电位重置，从而使所述驱动晶体管Td的栅极电压Vg被重置。由于所述第一重置电压信号Vcm的电压值大于所述驱动晶体管Td的所述阈值电压Vth，且所述第一开关晶体管Te1导通，使得所述驱动晶体管Td的栅源电压Vgs大于所述驱动晶体管的所述阈值电压Vth，所述驱动晶体管Td导通，所述发光器件D1因所述驱动晶体管Td、所述第一开关晶体管Te1的导通而发光。\n\n[0075]在所述侦测阶段S2：所述第一发光控制信号线EM1载入的所述第一发光控制信号em1为低电平，所述重置控制信号线EM2载入的所述重置控制信号em2为高电平，所述第二发光控制信号线EM3载入的所述第二发光控制信号em3为高电平；所述第一重置晶体管Ts1、所述第二重置晶体管Ts2保持导通，所述第一开关晶体管Te1截止，所述第二开关晶体管Te2导通。所述第三电容C3两端的电压仍保持Vi和Vcm；且由于所述第一电容C1的存在，所述驱动晶体管Td保持导通；所述第一重置晶体管Ts1保持导通使得所述驱动晶体管Td的栅极电压Vg仍为Vcm(即Vg＝Vcm)，所述驱动晶体管Td导通和所述第一开关晶体管Te1截止使得所述第二电容C2的两端分别与所述第一电压端OVDD、所述第二电压端OVSS电性连接，所述第二电容C2充电使得所述驱动晶体管Td的所述源极的电位升高，直至所述驱动晶体管Td的源极电压Vs等于Vcm-Vth时(即Vs＝Vcm-Vth)，所述驱动晶体管Td的所述栅源电压Vgs等于所述驱动晶体管Td的所述阈值电压Vth(即Vg-Vs＝Vcm-Vcm+Vth＝Vth)，所述驱动晶体管Td截止，所述驱动晶体管Td的所述阈值电压Vth被存储至所述第一电容C1中。\n\n[0076]在所述第一维持阶段H1：所述第一发光控制信号em1、所述重置控制信号em2、所述第二发光控制信号em3及所述数据写入控制信号wr均为低电平，所述驱动晶体管Td、所述第一重置晶体管Ts1、所述第二重置晶体管Ts2、所述第一开关晶体管Te1及所述数据晶体管Tda均关断，所述驱动晶体管Td的所述栅源电压Vgs保持为所述阈值电压Vth。\n\n[0077]在所述数据写入阶段S3：所述数据写入控制信号线WR所载入的所述数据写入控制信号wr为高电平，所述数据晶体管Tda响应所述数据写入控制信号wr导通；所述数据信号Vdata被传输至所述第三节点M处，所述第三节点M处的电压由Vi变为Vdata，变化量为Vdata-Vi。由于所述第三电容C3的存在，所述第一节点G处的电压(即所述驱动晶体管Td的所述栅极电压Vg)亦存在变化量Vdata-Vi，且由于所述第一电容C1和所述第二电容C2的存在，所述变化量Vdata-Vi经所述第一电容C1、所述第二电容C2和所述第三电容C3的分压作用，使得所述驱动晶体管Td的所述栅极电压Vg由Vcm变为Vcm+(Vdata-Vi)*(C3/((C1C2/(C1+C2))+C3))。相应地，由于所述第一节点G处存在变化量(Vdata-Vi)*(C3/((C1C2/(C1+C2))+C3))，所述第一电容C1和所述第二电容C2具有分压作用，使得所述驱动晶体管Td的所述源极电压Vs由Vcm-Vth变为Vcm-Vth+(Vdata-Vi)*(C3/((C1C2/(C1+C2))+C3))*(C1/(C1+C2))，即Vs＝Vcm-Vth+(Vdata-Vi)*(C3C1/(C1C2+C1C3+C2C3))。\n\n[0078]其中，在所述数据写入阶段S3，由于所述第二发光控制信号em3为低电平，所述第二开关晶体管Te2截止，则所述驱动晶体管Td与所述第一电压端OVDD之间的电性连接被断开，可以降低所述第一电压端OVDD对所述驱动晶体管Td的所述源极电压Vs的影响，从而降低对所述第一电容C1存储的电压的影响，继而降低对所述驱动晶体管Td的所述栅极电压Vg的影响。\n\n[0079]在所述第二维持阶段H2：所述第一发光控制信号em1、所述重置控制信号em2、所述第二发光控制信号em3及所述数据写入控制信号wr均为低电平，所述驱动晶体管Td、所述第一重置晶体管Ts1、第二重置晶体管Ts2、所述第一开关晶体管Te1及所述数据晶体管Tda均关断，所述驱动晶体管Td的栅极电压Vg保持为Vcm+(Vdata-Vi)*(C3/((C1C2/(C1+C2))+C3))，所述驱动晶体管Td的源极电压Vs保持为Vcm-Vth+(Vdata-Vi)*(C3C1/(C1C2+C1C3+C2C3))。\n\n[0080]在所述发光阶段S4：所述第一发光控制信号em1为高电平，所述第二发光控制信号em3为高电平、所述第一开关晶体管Te1及所述第二开关晶体管Te2导通，所述驱动晶体管Td产生驱动所述发光器件D1发光的驱动电流I。\n\n[0081]其中，由于Vg＝Vcm+(Vdata-Vi)*(C3/((C1C2/(C1+C2))+C3))，Vs＝Vcm-Vth+(Vdata-Vi)*(C3C1/(C1C2+C1C3+C2C3))，则可得：\n\n[0082]Vgs＝Vth+(Vdata-Vi)*[(C3/((C1C2/(C1+C2))+C3))-(C3C1/(C1C2+C1C3+C2C3))]；\n\n[0083]I＝(CoxμmW/L)*(Vgs-Vth)2/2＝(CoxμmW/L)*[(Vdata-Vi)*((C3/((C1C2/(C1+C2))+C3))-(C3C1/(C1C2+C1C3+C2C3)))]2/2。\n\n[0084]因此，在所述驱动晶体管Td驱动所述发光器件D1发光时，可以降低所述驱动晶体管Td的所述阈值电压Vth对所述驱动电流I的影响，保证所述发光器件D1发光的稳定性。\n\n[0085]本发明的实施例还提供一种显示面板，所述显示面板包括任一上述的像素驱动电路。\n\n[0086]请继续参阅图3A～图3B是本发明实施例提供的显示面板的结构示意图；如图3C～图3D是沿图3B中的A-A’剖切的剖面图。如图4A～图4F是本发明的实施例提供的像素驱动电路的结构示意图。本发明的实施例还提供一种显示面板。可选地，所述显示面板包括自发光显示面板、量子点显示面板、柔性显示面板等。\n\n[0087]请继续参阅图3A～图3B，所述显示面板包括显示区300a和非显示区300b。\n\n[0088]可选地，所述非显示区300b包括位于所述显示区300a外围的第一非显示区3001a，以及，位于所述显示区300a内的第二非显示区3001b，如图3A所示。进一步地，所述显示面板还包括正对所述第二非显示区3001b设置的传感器。\n\n[0089]可选地，所述显示区300a包括主显示区3002a、透光显示区3002b及位于所述主显示区3002a与所述透光显示区3002b之间的过渡显示区3002c，所述非显示区300b位于所述主显示区3002a外侧，如图3B所示。进一步地，所述显示面板还包括正对所述透光显示区3002b设置的传感器。\n\n[0090]可选地，所述传感器包括指纹识别传感器、摄像头、结构光传感器、光线传感器等，以使所述显示面板通过所述传感器采集信号，从而使所述显示面板实现屏下指纹识别、屏下摄像头、屏下面部识别、屏下距离感知等屏下传感方案。\n\n[0091]所述显示面板包括多个发光器件D1及多个像素驱动电路，每一所述像素驱动电路与对应的所述发光器件D1连接，以用于驱动对应的所述发光器件D1发光。\n\n[0092]可选地，每一所述像素驱动电路与一所述发光器件D1连接，以利用一所述像素驱动电路驱动一所述发光器件D1发光。具体地，如图3A所示，在所述显示区300a内，利用一所述像素驱动电路驱动一所述发光器件D1发光。具体地，如图3B所示，在所述主显示区3002a内，利用一所述像素驱动电路驱动一所述发光器件D1发光。\n\n[0093]可选地，一所述像素驱动电路与多个所述发光器件D1连接，以利用一所述像素驱动电路驱动多个所述发光器件D1发光。具体地，如图3B所示，在所述透光显示区3002b和所述过渡显示区3002c，利用一所述像素驱动电路驱动多个所述发光器件D1发光，且驱动位于所述透光显示区3002b和所述过渡显示区3002c内的多个所述发光器件D1发光的所述像素驱动电路位于所述过渡显示区3002c内，以降低像素驱动电路对所述透光显示区3002b透光率的影响。\n\n[0094]可选地，所述发光器件D1包括有机发光二极管、次毫米发光二极管或微型发光二极管。进一步地，所述有机发光二极管包括倒置型有机发光二极管、正型发光二极管。\n\n[0095]请继续参阅图3C～图3D，每一所述发光器件D1包括阴极301、阳极302及位于所述阴极301与所述阳极302之间的发光层303。所述显示面板包括衬底304，所述发光器件D1及所述像素驱动电路均位于所述衬底304上。\n\n[0096]进一步地，所述发光器件D1为倒置型有机发光二极管，所述发光器件D1的所述阴极301与所述像素驱动电路连接，所述发光器件D1的所述阳极302位于所述发光层303远离所述衬底304的一侧，如图3C所示；或所述发光器件D1为正型有机发光二极管，所述发光器件D1的所述阳极302与所述像素驱动电路连接，所述发光器件D1的所述阴极301位于所述发光层303远离所述衬底304的一侧，如图3D所示。\n\n[0097]可选地，所述发光层303包括量子点材料、钙钛矿材料、荧光材料等，以提高所述发光器件D1的发光效率。\n\n[0098]请继续参阅图3C～图3D，所述显示面板还包括位于所述衬底304上的有源层3051、第一电极层、第二电极层、绝缘层306、平坦层307及像素定义层308。所述第一电极层包括与所述有源层3051对应的栅极3052，所述第二电极层包括与所述有源层3051电性连接的源极及漏极3053。其中，每一所述像素驱动电路包括多个晶体管，每一所述晶体管均包括有源层3051、栅极3052、源极及漏极3053。可选地，所述显示面板还包括第三电极层，所述第三电极层包括与所述栅极3052对应的电极部3054，以使所述电极部3054与所述栅极3052形成电容。\n\n[0099]可选地，所述有源层3051包括无机半导体材料或有机半导体材料。进一步地，所述无机半导体材料包括非晶硅半导体、多晶硅半导体、氧化物半导体等材料。\n\n[0100]可选地，所述显示面板还包括封装层、触控电极、色转换层等未示出部分。\n\n[0101]请继续参阅图4A～图4F，每一所述像素驱动电路包括驱动模块、重置补偿模块、数据写入模块及发光控制模块。\n\n[0102]所述驱动模块包括第一晶体管T1，所述第一晶体管T1用于产生驱动所述发光器件D1发光的驱动电流，所述第一晶体管T1与对应的所述发光器件D1串联于第一电压端OVDD与第二电压端OVSS之间。可选地，所述发光器件D1的阳极与所述第一电压端OVDD连接，所述第一晶体管T1的漏极与所述发光器件D1的阴极连接，所述第一晶体管T1的源极与所述第二电压端OVSS电性连接，如图4A～图4C所示。可选地，所述发光器件D1的阴极与所述第二电压端OVSS连接，所述第一晶体管T1的源极与所述发光器件D1的阳极电性连接，所述第一晶体管T1的漏极与所述第一电压端OVDD连接，如图4D～图4F所示。\n\n[0103]请继续参阅图4A～图4F，所述重置补偿模块包括第二晶体管T2、第一电容C1及第二电容C2；所述第二晶体管T2用于根据重置控制信号将第一重置电压信号加载至所述第一晶体管T1的栅极，所述第一电容C1用于存储所述第一晶体管T1的阈值电压，所述第二电容C2用于将所述阈值电压耦合至所述第一电容C1。\n\n[0104]具体地，所述第二晶体管T2的栅极与重置控制信号线EM2连接，所述第二晶体管T2的源极或漏极中的一者与第一重置电压端VI1连接，所述第二晶体管T2的所述源极或所述漏极中的另一者与所述第一晶体管T1的所述栅极连接。所述第一电容C1串联于所述第一晶体管T1的所述栅极与所述第一晶体管T1的所述源极之间，所述第二电容C2串联于所述第一晶体管T1的所述源极与所述第二电压端OVSS之间，从而使所述第二电容C2串联于所述第一电容C1与所述第二电压端OVSS之间。\n\n[0105]其中，所述重置控制信号线EM2被配置为向所述第二晶体管T2提供所述重置控制信号；所述第一重置电压端VI1被配置为向所述第二晶体管T2提供所述第一重置电压信号，所述第一重置电压信号的电压值大于所述第一晶体管T1的所述阈值电压。\n\n[0106]请继续参阅图4A～图4F，所述数据写入模块包括第三晶体管T3，所述第三晶体管T3用于根据数据写入控制信号将所述数据信号加载至所述第一晶体管T1的所述栅极。具体地，所述第三晶体管T3的栅极与数据写入控制信号线WR连接，所述第三晶体管T3的源极或漏极中的一者与数据电压端Data连接，所述第三晶体管T3的所述源极或所述漏极中的另一者与所述第一晶体管T1的所述栅极连接。其中，所述数据写入控制信号线WR被配置为向所述第三晶体管T3提供所述数据写入控制信号，所述数据电压端Data被配置为向所述第三晶体管T3提供所述数据信号。\n\n[0107]进一步地，请参阅图4B～图4C及图4E～图4F，所述重置补偿模块还包括第五晶体管T5及第三电容C3。所述第三电容C3用于将所述数据信号耦合至所述第一晶体管T1的栅极；所述第五晶体管T5用于和所述第二晶体管T2根据所述重置控制信号重置所述第三电容C3两端的电压。\n\n[0108]具体地，所述第三电容C3串联于所述第三晶体管T3的所述源极或所述漏极中的另一者与所述第一晶体管T1的所述栅极之间；所述第五晶体管T5的栅极与所述重置控制信号线EM2连接，所述第五晶体管T5的源极或漏极中的一者与第二重置电压端VI2连接，所述第五晶体管T5的所述源极或所述漏极中的另一者与所述第三晶体管T3的所述源极或所述漏极中与所述第三电容C3连接的一者连接。所述重置控制信号线EM2被配置为向所述第二晶体管T2、所述第五晶体管T5提供所述重置控制信号，所述第二重置电压端VI2被配置为向所述第五晶体管T5提供第二重置电压信号。\n\n[0109]请继续参阅图4A～图4F，所述发光控制模块包括第四晶体管T4，所述第四晶体管T4用于根据第一发光控制信号控制所述阈值电压通过所述第二电容C2耦合至所述第一电容C1。具体地，所述第四晶体管T4的栅极与第一发光控制信号线EM1连接，所述第四晶体管T4的源极或漏极中的一者与所述第一晶体管T1的所述源极连接，所述第四晶体管T4的所述源极或所述漏极中的另一者与所述第二电压端OVSS连接，如图4A～图4C所示；或，所述第四晶体管T4的所述源极或所述漏极中的另一者与所述发光器件D1的所述阳极连接，如图4D～图4F所示。其中，所述第一发光控制信号线EM1被配置为向所述第四晶体管T4提供所述第一发光控制信号。\n\n[0110]进一步地，请继续参阅图4C和图4F，所述发光控制模块还包括第六晶体管T6，所述第六晶体管T6用于根据第二发光控制信号断开所述第一电压端OVDD与所述第一晶体管T1的电性连接。具体地，所述第六晶体管T6的栅极与第二发光控制信号线EM3连接，所述第六晶体管T6的源极或漏极中的一者与所述第一晶体管T1的所述漏极连接，所述第六晶体管T6的所述源极或所述漏极中的另一者与所述发光器件D1的所述阴极连接，如图4C所示；或，所述第六晶体管T6的所述源极或所述漏极中的另一者与所述第一电压端OVDD连接，如图4F所示。其中，所述第二发光控制信号线EM3被配置为向所述第六晶体管T6提供所述第二发光控制信号。\n\n[0111]可选地，所述第一晶体管T1、所述第二晶体管T2、所述第三晶体管T3、所述第四晶体管T4、所述第五晶体管T5及所述第六晶体管T6包括场效应晶体管。进一步地，所述场效应晶体管包括薄膜晶体管。可选地，所述第一晶体管T1、所述第二晶体管T2、所述第三晶体管T3、所述第四晶体管T4、所述第五晶体管T5及所述第六晶体管T6包括N型应晶体管、P型晶体管。\n\n[0112]本发明的实施例还提供一种显示装置，所述显示装置包括上述的任一像素驱动电路或上述的任一显示面板。\n\n[0113]所述显示装置包括固定终端如电视、台式电脑，移动终端如手机、笔记本电脑，以及可穿戴设备如手环、VR(虚拟显示)设备、AR(增强显示)设备。\n\n[0114]本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10914, 23968, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管显示面板及其制备方法、显示装置。\n\n背景技术\n\n[0002]MLED(Micro、Mini Light Emitting Diode，微发光二极管)是新一代显示技术，比现有的OLED(Organic Light Emitting Diode，有机发光二极管)显示技术的亮度更高、发光效率更好、且功耗更低，因此受到广泛关注。大尺寸的微发光二极管显示面板主要是通过多个小尺寸的微发光二极管显示面板拼接形成，多个小尺寸的微发光二极管显示面板的外围走线区均设置有多个金属接线垫，使得大尺寸的微发光二极管显示面板存在多个拼接缝隙。\n\n[0003]另外，现有技术的微发光二极管显示面板采用薄膜晶体管的源极和电源线的负极作为微发光二极管的绑定端，其中，所述源极、所述电源线的负极以及外围走线区内的多个金属接线垫对环境光的反射会造成微发光二极管显示面板的对比度降低，影响微发光二极管显示面板的显示品质。故，有必要改善这一缺陷。\n\n发明内容\n\n[0004]本发明实施例提供一种微发光二极管显示面板，用于解决由于现有技术的微发光二极管显示面板的源极、电源线的负极以及外围走线区内的多个金属接线垫反光造成的微发光二极管显示面板的对比度降低，影响微发光二极管显示面板的显示品质的技术问题。\n\n[0005]本发明实施例提供一种微发光二极管显示面板，包括微发光二极管绑定区、遮光区和外围走线区，所述微发光二极管显示面板还包括：衬底基板、位于所述衬底基板之上的第一金属层、位于所述第一金属层之上的层间绝缘层以及位于所述层间绝缘层之上的第二金属层；其中，所述第二金属层之上且对应于所述微发光二极管绑定区和所述外围走线区设置有用于降低所述第二金属层的反射率的减反层。\n\n[0006]在本发明实施例提供的微发光二极管显示面板中，所述第二金属层包括位于所述微发光二极管绑定区的源极和电源线的负极、位于所述遮光区的漏极以及位于所述外围走线区的所述电源线。\n\n[0007]在本发明实施例提供的微发光二极管显示面板中，所述减反层设置于所述第二金属层远离所述衬底基板一侧的表面。\n\n[0008]在本发明实施例提供的微发光二极管显示面板中，位于所述微发光二极管绑定区的所述源极和所述电源线的负极与所述减反层之间设有一绝缘层，所述源极和所述电源线的负极通过过孔与所述减反层电性连接，位于所述外围走线区的所述电源线与所述减反层层叠设置。\n\n[0009]在本发明实施例提供的微发光二极管显示面板中，所述减反层包括沿远离所述第二金属层的方向依次层叠设置的第一减反层和第二减反层，所述第一减反层的材料为钼、钼的合金或钼的氧化物，所述第二减反层的材料为氧化铟锡或氧化铟锌。\n\n[0010]在本发明实施例提供的微发光二极管显示面板中，所述第二金属层的材料包括铜或铜的合金。\n\n[0011]在本发明实施例提供的微发光二极管显示面板中，所述第一金属层包括位于所述遮光区的栅极和位于所述外围走线区的数据线。\n\n[0012]在本发明实施例提供的微发光二极管显示面板中，所述第一金属层包括依次层叠设置的第一子膜层、第二子膜层和第三子膜层，所述第一子膜层的材料为铜，所述第二子膜层的材料为钼、钼的合金或钼的氧化物，所述第三子膜层的材料为氧化铟锡或氧化铟锌。\n\n[0013]本发明实施例提供一种微发光二极管显示面板的制备方法，所述微发光二极管显示面板包括微发光二极管绑定区、遮光区和外围走线区，所述制备方法包括步骤：提供一衬底基板；在所述衬底基板之上制备第一金属层；在所述第一金属层之上制备层间绝缘层；在所述层间绝缘层之上制备第二金属层；在所述第二金属层之上制备绝缘层；以及在所述第二金属层之上且对应于所述微发光二极管绑定区和所述外围走线区制备用于降低所述第二金属层的反射率的减反层。\n\n[0014]本发明实施例还提供一种显示装置，包括上述的微发光二极管显示面板。\n\n[0015]有益效果：本发明实施例提供的一种微发光二极管显示面板，通过在第二金属层之上且对应于微发光二极管绑定区和外围走线区设置减反层，所述减反层可以降低所述第二金属层对环境光的反射，提高微发光二极管显示面板的对比度，提升微发光二极管显示面板的显示品质。\n\n附图说明\n\n[0016]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。\n\n[0017]图1是本发明实施例提供的微发光二极管显示面板的基本结构示意图。\n\n[0018]图2是本发明实施例提供的另一微发光二极管显示面板的基本结构示意图。\n\n[0019]图3是本发明实施例提供的又一微发光二极管显示面板的基本结构示意图。\n\n[0020]图4是本发明实施例提供的微发光二极管显示面板的制备方法流程图。\n\n[0021]图5a～图5i是本发明实施例提供的微发光二极管显示面板的制备工艺流程中各部件的基本结构示意图。\n\n具体实施方式\n\n[0022]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。在附图中，为了清晰及便于理解和描述，附图中绘示的组件的尺寸和厚度并未按照比例。\n\n[0023]如图1所示，为本发明实施例提供的微发光二极管显示面板的基本结构示意图，所述微发光二极管显示面板包括微发光二极管绑定区A1、遮光区A2和外围走线区A3，还包括衬底基板101、第一金属层106、层间绝缘层107以及第二金属层108。\n\n[0024]在一种实施例中，所述微发光二极管显示面板还包括遮光金属层102、缓冲层103、有源层104、栅绝缘层105以及绝缘层110，所述遮光金属层102位于所述衬底基板101之上，用于为所述有源层104遮光，所述遮光金属层102可以为钼、铝/钼、钼/铜、钼钛合金/铜、钼钛合金/铜/钼钛合金、钛/铝/钛、钛/铜/钛、钼/铜/氧化铟锌、氧化铟锌/铜/氧化铟锌、钼/铜/氧化铟锡、镍/铜/镍、钼钛镍合金/铜/钼钛镍合金、钼镍合金/铜/钼镍合金、镍铬合金/铜/镍铬合金、钛镍合金/铜/钛镍合金、钛铬合金/铜/钛铬合金、铜铌合金、钼/铜/钼的氧化物、钼钛合金/铜/钼的氧化物、钼钛镍合金/铜/钼的氧化物、钼/铜/钼钛镍合金/氧化铟锌、钼钛镍合金/铜/钼钛镍合金/氧化铟锌或钼钛合金/铜/钼钛镍合金/氧化铟锌的其中一种膜层结构。需要说明的是，铝/钼指的是底层为铝、顶层为钼的叠层结构，其他类似表述方式不作过多解释。\n\n[0025]所述缓冲层103位于所述衬底基板101之上且覆盖所述遮光金属层102，用于阻挡外界环境中的水氧，避免水氧入侵影响所述有源层104，所述缓冲层103的材料可以为硅的氧化物、硅的氮化物、硅的氮化物/硅的氧化物叠层结构或硅的氮氧化物等。\n\n[0026]所述有源层104位于所述缓冲层103之上，所述有源层104为半导体层，其材料可以为氧化物半导体如IGZO(Indium Gallium Zinc Oxide，铟镓锌氧化物)、IGTO(IndiumGallium Tin Oxide，铟镓锡氧化物)、IGO(Indium Gallium Oxide，铟镓氧化物)、IZO(Indium Zinc Oxide，铟锌氧化物)、AIZO(Aluminum Indium Zinc Oxide，铝铟锌氧化物)或IGZTO(Indium Gallium Zinc Tin Oxide，铟镓锌锡氧化物)等，或其他类型的半导体如LTPS(Low Temperature Poly-silicon，低温多晶硅)或a-Si(Amorphous silicon，非晶硅)。\n\n[0027]所述栅绝缘层105位于所述有源层104和所述缓冲层103之上，所述栅绝缘层105的材料可以为硅的氧化物、硅的氮化物、氧化铝/硅的氮化物/硅的氧化物叠层结构或硅的氧化物/硅的氮化物/硅的氧化物叠层结构等。\n\n[0028]所述第一金属层106位于所述栅绝缘层105之上，包括位于所述遮光区A2的栅极1061和位于所述外围走线区A3的数据线1062，所述数据线1062用于提供灰阶电压。在一种实施例中，所述第一金属层106包括依次层叠设置的第一子膜层、第二子膜层和第三子膜层，所述第一子膜层的材料为铜，所述第二子膜层的材料为钼、钼的合金或钼的氧化物，所述第三子膜层的材料为氧化铟锡或氧化铟锌。具体的，例如为铜/钼/氧化铟锌、铜/钼钛合金/氧化铟锌、铜/钼钛镍合金/氧化铟锌、铜/钼/氧化铟锡或铜/钼钛镍合金/氧化铟锡的叠层结构。\n\n[0029]所述层间绝缘层107位于所述缓冲层103之上且覆盖所述栅极1061和所述数据线1062，所述层间绝缘层107对应于所述有源层104的两端分别形成有第一过孔和第二过孔，所述层间绝缘层107对应于所述遮光金属层102的一端形成有第三过孔，所述层间绝缘层107的材料可以为硅的氧化物、硅的氮化物或硅的氮氧化物等。\n\n[0030]所述第二金属层108位于所述层间绝缘层107之上，包括位于所述微发光二极管绑定区A1的源极1081和电源线的负极1084、位于所述遮光区A2的漏极1082以及位于所述外围走线区A3的所述电源线(正极1083或负极1084)，所述源极1081通过所述第一过孔与所述有源层104的一端电性连接，所述漏极1082通过所述第二过孔与所述有源层104的另一端电性连接，所述源极1081通过所述第三过孔与所述遮光金属层102的一端电性连接；另外，所述源极1081与微发光二极管112的其中之一绑定端电性连接，所述微发光二极管112的其中另一绑定端与所述电源线的负极1084电性连接。\n\n[0031]在一种实施例中，所述第二金属层108的材料包括铜或铜的合金。具体的，所述第二金属层108可以为钼、铝/钼、钼/铜、钼钛合金/铜、钼钛合金/铜/钼钛合金、钛/铝/钛、钛/铜/钛、钼/铜/氧化铟锌、氧化铟锌/铜/氧化铟锌、钼/铜/氧化铟锡、镍/铜/镍、钼钛镍合金/铜/钼钛镍合金、钼镍合金/铜/钼镍合金、镍铬合金/铜/镍铬合金、钛镍合金/铜/钛镍合金、钛铬合金/铜/钛铬合金或铜铌合金的其中一种膜层结构。\n\n[0032]所述绝缘层110位于所述源极1081、所述漏极1082以及所述层间绝缘层107之上，所述绝缘层110的材料可以为硅的氧化物、硅的氮化物、硅的氮氧化物或硅的氧化物/硅的氮化物叠层结构等。\n\n[0033]其中，所述第二金属层108之上且对应于所述微发光二极管绑定区A1和所述外围走线区A3设置有用于降低所述第二金属层108的反射率的减反层109，具体的，所述减反层109设置于所述第二金属层108远离所述衬底基板101一侧的表面。\n\n[0034]在一种实施例中，所述减反层109包括沿远离所述第二金属层108的方向依次层叠设置的第一减反层和第二减反层，所述第一减反层的材料为钼、钼的合金或钼的氧化物，所述第二减反层的材料为氧化铟锡或氧化铟锌。例如为钼/氧化铟锡、钼/氧化铟锌、钼钛合金/氧化铟锡、钼钛合金/氧化铟锌、钼钛镍合金/氧化铟锡、钼钛镍合金/氧化铟锌、钼的氧化物/氧化铟锡或钼的氧化物/氧化铟锌的叠层结构。\n\n[0035]可以理解的是，本发明实施例通过在所述第二金属层108之上且对应于所述微发光二极管绑定区A1和所述外围走线区A3设置减反层109，所述减反层109可以降低微发光二极管112的绑定端以及微发光二极管显示面板的外围走线区A3的金属接线垫(即电源线的正极1083或负极1084)对环境光的反射，提高微发光二极管显示面板的对比度，提升微发光二极管显示面板的显示品质，还可以降低金属接线垫的阻抗，改善电源线的电压降。\n\n[0036]需要说明的是，不是所有的电源线的负极1084均与微发光二极管112绑定，即电源线的一部分负极与所述微发光二极管112绑定，电源线的另一部分负极与像素电路中的其他接线端电性连接，由于像素电路并非本发明重点，在此不进行过多描述。\n\n[0037]在一种实施例中，所述微发光二极管显示面板还包括位于所述绝缘层110之上的遮光层111以及位于所述减反层109之上的所述微发光二极管112，具体的，所述遮光层111为黑色光阻层，用于避免相邻的微发光二极管之间相互串扰以及为所述有源层104遮光，所述微发光二极管112通过导电胶113与其下方的所述减反层109固定连接。\n\n[0038]接下来，请参阅图2，为本发明实施例提供的另一微发光二极管显示面板的基本结构示意图，与图1提供的微发光二极管显示面板的基本结构不同的是，位于所述微发光二极管绑定区A1的所述源极1081和所述电源线的负极1084与所述减反层109之间设有一绝缘层110，所述源极1081和所述电源线的负极1084通过过孔与所述减反层109电性连接，位于所述外围走线区A3的所述电源线(正极1083或负极1084)与所述减反层109层叠设置，即所述绝缘层110对应于所述微发光二极管绑定区A1(如图1)和所述遮光区A2(如图1)设置，即位于所述源极1081之上的减反层109既可以充当像素电极给所述微发光二极管112供电，又具有降低反射率的功能。\n\n[0039]接下来，请参阅图3，为本发明实施例提供的又一微发光二极管显示面板的基本结构示意图，与图1提供的微发光二极管显示面板的基本结构不同的是，所述漏极1082之上也设置有所述减反层109，具体的，图1中的减反层109是在所述绝缘层110之后制备的，而本实施例的减反层109是在所述绝缘层110之前制备的，可以与所述第二金属层108一同进行曝光、显影，节约一道光罩制程，降低生产成本，提高生产效率。\n\n[0040]接下来，请参阅图4，为本发明实施例提供的微发光二极管显示面板的制备方法流程图，所述制备方法包括步骤：\n\n[0041]S201、提供一衬底基板；\n\n[0042]S202、在所述衬底基板之上制备第一金属层；\n\n[0043]S203、在所述第一金属层之上制备层间绝缘层；\n\n[0044]S204、在所述层间绝缘层之上制备第二金属层；\n\n[0045]S205、在所述第二金属层之上制备绝缘层；以及\n\n[0046]S206、在所述第二金属层之上且对应于所述微发光二极管绑定区和所述外围走线区制备用于降低所述第二金属层的反射率的减反层。\n\n[0047]接下来，请参阅图5a～图5i，为本发明实施例提供的微发光二极管显示面板的制备工艺流程中各部件的基本结构示意图，首先如图5a所示，提供一衬底基板101，所述衬底基板101可以为玻璃等无机物，也可以为聚酰亚胺等有机物；然后在所述衬底基板101之上进行金属膜层镀膜，所述金属膜层可以为钼、铝/钼、钼/铜、钼钛合金/铜、钼钛合金/铜/钼钛合金、钛/铝/钛、钛/铜/钛、钼/铜/氧化铟锌、氧化铟锌/铜/氧化铟锌、钼/铜/氧化铟锡、镍/铜/镍、钼钛镍合金/铜/钼钛镍合金、钼镍合金/铜/钼镍合金、镍铬合金/铜/镍铬合金、钛镍合金/铜/钛镍合金、钛铬合金/铜/钛铬合金、铜铌合金、钼/铜/钼的氧化物、钼钛合金/铜/钼的氧化物、钼钛镍合金/铜/钼的氧化物、钼/铜/钼钛镍合金/氧化铟锌、钼钛镍合金/铜/钼钛镍合金/氧化铟锌或钼钛合金/铜/钼钛镍合金/氧化铟锌的其中一种膜层结构，然后对其进行图案化，得到遮光金属层102。\n\n[0048]接下来，如图5b所示，在所述衬底基板101之上进行缓冲层103镀膜，所述缓冲层103覆盖所述遮光金属层102，所述缓冲层103的材料可以为硅的氧化物、硅的氮化物、硅的氮化物/硅的氧化物叠层结构或硅的氮氧化物等；然后进行半导体层镀膜，半导体材料可以为氧化物半导体或其他类型半导体，然后对半导体层进行图案化，得到有源层104。\n\n[0049]接下来，如图5c所示，在所述缓冲层103之上进行绝缘层镀膜，绝缘层材料可以为硅的氧化物、硅的氮化物、氧化铝/硅的氮化物/硅的氧化物叠层结构或硅的氧化物/硅的氮化物/硅的氧化物叠层结构等；然后在所述绝缘层之上进行第一金属层106镀膜，第一金属层106为钼的氧化物/铜、氧化铟锌/钼/铜、氧化铟锌/钼钛合金/铜、氧化铟锌/钼钛镍合金/铜、氧化铟锡/钼/铜、氧化铟锡/钼钛镍合金/铜、钼、铝/钼、钼/铜、钼钛合金/铜、钼钛合金/铜/钼钛合金、钛/铝/钛、钛/铜/钛、钼/铜/氧化铟锌、氧化铟锌/铜/氧化铟锌、钼/铜/氧化铟锡、镍/铜/镍、钼钛镍合金/铜/钼钛镍合金、钼镍合金/铜/钼镍合金、镍铬合金/铜/镍铬合金、钛镍合金/铜/钛镍合金、钛铬合金/铜/钛铬合金或铜铌合金的其中一种膜层结构；然后对所述第一金属层106进行图案化，得到栅极1061和数据线1062，利用栅极自对准工艺对所述绝缘层进行图案化，得到栅绝缘层105。\n\n[0050]接下来，如图5d所示，在所述缓冲层103之上进行层间绝缘层107镀膜，所述层间绝缘层107的材料可以为硅的氧化物、硅的氮化物或硅的氮氧化物等，然后对其进行图案化，形成分别对应于所述有源层104两端的第一过孔和第二过孔、对应于所述遮光金属层102一端的第三过孔。\n\n[0051]接下来，如图5e所示，在所述层间绝缘层107之上进行第二金属层108镀膜，所述第二金属层膜层为钼、铝/钼、钼/铜、钼钛合金/铜、钼钛合金/铜/钼钛合金、钛/铝/钛、钛/铜/钛、钼/铜/氧化铟锌、氧化铟锌/铜/氧化铟锌、钼/铜/氧化铟锡、镍/铜/镍、钼钛镍合金/铜/钼钛镍合金、钼镍合金/铜/钼镍合金、镍铬合金/铜/镍铬合金、钛镍合金/铜/钛镍合金、钛铬合金/铜/钛铬合金或铜铌合金的其中一种膜层结构，然后对其进行图案化处理，得到源极1081、漏极1082以及电源线的正极1083和负极1084，其中，所述源极1081通过所述第一过孔与所述有源层104的一端电性连接，所述漏极1082通过所述第二过孔与所述有源层104的另一端电性连接，所述源极1081通过所述第三过孔与所述遮光金属层102的一端电性连接。\n\n[0052]接下来，如图5f所示，在所述层间绝缘层107之上进行绝缘层镀膜并进行图案化，图案化后的所述绝缘层110位于所述源极1081、所述漏极1082以及所述层间绝缘层107之上，所述绝缘层110的材料可以为硅的氧化物、硅的氮化物、硅的氮氧化物或硅的氧化物/硅的氮化物叠层结构等。\n\n[0053]接下来，如图5g所示，在所述层间绝缘层107之上进行减反层镀膜并图案化，图案化后的所述减反层109位于所述源极1081、所述电源线的正极1083和负极1084之上，所述减反层109为钼/氧化铟锡、钼/氧化铟锌、钼钛合金/氧化铟锡、钼钛合金/氧化铟锌、钼钛镍合金/氧化铟锡、钼钛镍合金/氧化铟锌、钼的氧化物/氧化铟锡或钼的氧化物/氧化铟锌的其中一种膜层结构。\n\n[0054]接下来，如图5h和5i所示，在所述绝缘层110之上进行遮光层111的制作以及在所述减反层109之上绑定微发光二极管112，完成所述微发光二极管显示面板的制备。具体的，所述源极1081与所述微发光二极管112的其中之一绑定端电性连接，所述微发光二极管112的其中另一绑定端与所述电源线的负极1084电性连接。\n\n[0055]本发明实施例还提供一种显示装置，包括上述的微发光二极管显示面板，所述微发光二极管显示面板的结构及制备方法请参见图1至图5i及相关描述，在此不再赘述。本发明实施例提供的显示装置可以为：手机、平板电脑、笔记本电脑、数码相机、导航仪等具有显示功能的产品或部件。\n\n[0056]综上所述，本发明实施例提供的一种微发光二极管显示面板，通过在第二金属层之上且对应于微发光二极管绑定区和外围走线区设置减反层，所述减反层可以降低所述第二金属层对环境光的反射，提高微发光二极管显示面板的对比度，提升微发光二极管显示面板的显示品质，解决了由于现有技术的微发光二极管显示面板的源极、电源线的负极以及外围走线区内的多个金属接线垫反光造成的微发光二极管显示面板的对比度降低，影响微发光二极管显示面板的显示品质的技术问题。\n\n[0057]以上对本发明实施例所提供的一种微发光二极管显示面板及其制备方法、显示装置进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管显示面板及其制备方法、显示装置。\n\n背景技术\n\n[0002]MLED(Micro、Mini Light Emitting Diode，微发光二极管)是新一代显示技术，比现有的OLED(Organic Light Emitting Diode，有机发光二极管)显示技术的亮度更高、发光效率更好、且功耗更低，因此受到广泛关注。大尺寸的微发光二极管显示面板主要是通过多个小尺寸的微发光二极管显示面板拼接形成，多个小尺寸的微发光二极管显示面板的外围走线区均设置有多个金属接线垫，使得大尺寸的微发光二极管显示面板存在多个拼接缝隙。\n\n[0003]另外，现有技术的微发光二极管显示面板采用薄膜晶体管的源极和电源线的负极作为微发光二极管的绑定端，其中，所述源极、所述电源线的负极以及外围走线区内的多个金属接线垫对环境光的反射会造成微发光二极管显示面板的对比度降低，影响微发光二极管显示面板的显示品质。故，有必要改善这一缺陷。\n\n发明内容\n\n[0004]本发明实施例提供一种微发光二极管显示面板，用于解决由于现有技术的微发光二极管显示面板的源极、电源线的负极以及外围走线区内的多个金属接线垫反光造成的微发光二极管显示面板的对比度降低，影响微发光二极管显示面板的显示品质的技术问题。\n\n[0005]本发明实施例提供一种微发光二极管显示面板，包括微发光二极管绑定区、遮光区和外围走线区，所述微发光二极管显示面板还包括：衬底基板、位于所述衬底基板之上的第一金属层、位于所述第一金属层之上的层间绝缘层以及位于所述层间绝缘层之上的第二金属层；其中，所述第二金属层之上且对应于所述微发光二极管绑定区和所述外围走线区设置有用于降低所述第二金属层的反射率的减反层。\n\n[0006]在本发明实施例提供的微发光二极管显示面板中，所述第二金属层包括位于所述微发光二极管绑定区的源极和电源线的负极、位于所述遮光区的漏极以及位于所述外围走线区的所述电源线。\n\n[0007]在本发明实施例提供的微发光二极管显示面板中，所述减反层设置于所述第二金属层远离所述衬底基板一侧的表面。\n\n[0008]在本发明实施例提供的微发光二极管显示面板中，位于所述微发光二极管绑定区的所述源极和所述电源线的负极与所述减反层之间设有一绝缘层，所述源极和所述电源线的负极通过过孔与所述减反层电性连接，位于所述外围走线区的所述电源线与所述减反层层叠设置。\n\n[0009]在本发明实施例提供的微发光二极管显示面板中，所述减反层包括沿远离所述第二金属层的方向依次层叠设置的第一减反层和第二减反层，所述第一减反层的材料为钼、钼的合金或钼的氧化物，所述第二减反层的材料为氧化铟锡或氧化铟锌。\n\n[0010]在本发明实施例提供的微发光二极管显示面板中，所述第二金属层的材料包括铜或铜的合金。\n\n[0011]在本发明实施例提供的微发光二极管显示面板中，所述第一金属层包括位于所述遮光区的栅极和位于所述外围走线区的数据线。\n\n[0012]在本发明实施例提供的微发光二极管显示面板中，所述第一金属层包括依次层叠设置的第一子膜层、第二子膜层和第三子膜层，所述第一子膜层的材料为铜，所述第二子膜层的材料为钼、钼的合金或钼的氧化物，所述第三子膜层的材料为氧化铟锡或氧化铟锌。\n\n[0013]本发明实施例提供一种微发光二极管显示面板的制备方法，所述微发光二极管显示面板包括微发光二极管绑定区、遮光区和外围走线区，所述制备方法包括步骤：提供一衬底基板；在所述衬底基板之上制备第一金属层；在所述第一金属层之上制备层间绝缘层；在所述层间绝缘层之上制备第二金属层；在所述第二金属层之上制备绝缘层；以及在所述第二金属层之上且对应于所述微发光二极管绑定区和所述外围走线区制备用于降低所述第二金属层的反射率的减反层。\n\n[0014]本发明实施例还提供一种显示装置，包括上述的微发光二极管显示面板。\n\n[0015]有益效果：本发明实施例提供的一种微发光二极管显示面板，通过在第二金属层之上且对应于微发光二极管绑定区和外围走线区设置减反层，所述减反层可以降低所述第二金属层对环境光的反射，提高微发光二极管显示面板的对比度，提升微发光二极管显示面板的显示品质。\n\n附图说明\n\n[0016]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。\n\n[0017]图1是本发明实施例提供的微发光二极管显示面板的基本结构示意图。\n\n[0018]图2是本发明实施例提供的另一微发光二极管显示面板的基本结构示意图。\n\n[0019]图3是本发明实施例提供的又一微发光二极管显示面板的基本结构示意图。\n\n[0020]图4是本发明实施例提供的微发光二极管显示面板的制备方法流程图。\n\n[0021]图5a～图5i是本发明实施例提供的微发光二极管显示面板的制备工艺流程中各部件的基本结构示意图。\n\n具体实施方式\n\n[0022]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。在附图中，为了清晰及便于理解和描述，附图中绘示的组件的尺寸和厚度并未按照比例。\n\n[0023]如图1所示，为本发明实施例提供的微发光二极管显示面板的基本结构示意图，所述微发光二极管显示面板包括微发光二极管绑定区A1、遮光区A2和外围走线区A3，还包括衬底基板101、第一金属层106、层间绝缘层107以及第二金属层108。\n\n[0024]在一种实施例中，所述微发光二极管显示面板还包括遮光金属层102、缓冲层103、有源层104、栅绝缘层105以及绝缘层110，所述遮光金属层102位于所述衬底基板101之上，用于为所述有源层104遮光，所述遮光金属层102可以为钼、铝/钼、钼/铜、钼钛合金/铜、钼钛合金/铜/钼钛合金、钛/铝/钛、钛/铜/钛、钼/铜/氧化铟锌、氧化铟锌/铜/氧化铟锌、钼/铜/氧化铟锡、镍/铜/镍、钼钛镍合金/铜/钼钛镍合金、钼镍合金/铜/钼镍合金、镍铬合金/铜/镍铬合金、钛镍合金/铜/钛镍合金、钛铬合金/铜/钛铬合金、铜铌合金、钼/铜/钼的氧化物、钼钛合金/铜/钼的氧化物、钼钛镍合金/铜/钼的氧化物、钼/铜/钼钛镍合金/氧化铟锌、钼钛镍合金/铜/钼钛镍合金/氧化铟锌或钼钛合金/铜/钼钛镍合金/氧化铟锌的其中一种膜层结构。需要说明的是，铝/钼指的是底层为铝、顶层为钼的叠层结构，其他类似表述方式不作过多解释。\n\n[0025]所述缓冲层103位于所述衬底基板101之上且覆盖所述遮光金属层102，用于阻挡外界环境中的水氧，避免水氧入侵影响所述有源层104，所述缓冲层103的材料可以为硅的氧化物、硅的氮化物、硅的氮化物/硅的氧化物叠层结构或硅的氮氧化物等。\n\n[0026]所述有源层104位于所述缓冲层103之上，所述有源层104为半导体层，其材料可以为氧化物半导体如IGZO(Indium Gallium Zinc Oxide，铟镓锌氧化物)、IGTO(IndiumGallium Tin Oxide，铟镓锡氧化物)、IGO(Indium Gallium Oxide，铟镓氧化物)、IZO(Indium Zinc Oxide，铟锌氧化物)、AIZO(Aluminum Indium Zinc Oxide，铝铟锌氧化物)或IGZTO(Indium Gallium Zinc Tin Oxide，铟镓锌锡氧化物)等，或其他类型的半导体如LTPS(Low Temperature Poly-silicon，低温多晶硅)或a-Si(Amorphous silicon，非晶硅)。\n\n[0027]所述栅绝缘层105位于所述有源层104和所述缓冲层103之上，所述栅绝缘层105的材料可以为硅的氧化物、硅的氮化物、氧化铝/硅的氮化物/硅的氧化物叠层结构或硅的氧化物/硅的氮化物/硅的氧化物叠层结构等。\n\n[0028]所述第一金属层106位于所述栅绝缘层105之上，包括位于所述遮光区A2的栅极1061和位于所述外围走线区A3的数据线1062，所述数据线1062用于提供灰阶电压。在一种实施例中，所述第一金属层106包括依次层叠设置的第一子膜层、第二子膜层和第三子膜层，所述第一子膜层的材料为铜，所述第二子膜层的材料为钼、钼的合金或钼的氧化物，所述第三子膜层的材料为氧化铟锡或氧化铟锌。具体的，例如为铜/钼/氧化铟锌、铜/钼钛合金/氧化铟锌、铜/钼钛镍合金/氧化铟锌、铜/钼/氧化铟锡或铜/钼钛镍合金/氧化铟锡的叠层结构。\n\n[0029]所述层间绝缘层107位于所述缓冲层103之上且覆盖所述栅极1061和所述数据线1062，所述层间绝缘层107对应于所述有源层104的两端分别形成有第一过孔和第二过孔，所述层间绝缘层107对应于所述遮光金属层102的一端形成有第三过孔，所述层间绝缘层107的材料可以为硅的氧化物、硅的氮化物或硅的氮氧化物等。\n\n[0030]所述第二金属层108位于所述层间绝缘层107之上，包括位于所述微发光二极管绑定区A1的源极1081和电源线的负极1084、位于所述遮光区A2的漏极1082以及位于所述外围走线区A3的所述电源线(正极1083或负极1084)，所述源极1081通过所述第一过孔与所述有源层104的一端电性连接，所述漏极1082通过所述第二过孔与所述有源层104的另一端电性连接，所述源极1081通过所述第三过孔与所述遮光金属层102的一端电性连接；另外，所述源极1081与微发光二极管112的其中之一绑定端电性连接，所述微发光二极管112的其中另一绑定端与所述电源线的负极1084电性连接。\n\n[0031]在一种实施例中，所述第二金属层108的材料包括铜或铜的合金。具体的，所述第二金属层108可以为钼、铝/钼、钼/铜、钼钛合金/铜、钼钛合金/铜/钼钛合金、钛/铝/钛、钛/铜/钛、钼/铜/氧化铟锌、氧化铟锌/铜/氧化铟锌、钼/铜/氧化铟锡、镍/铜/镍、钼钛镍合金/铜/钼钛镍合金、钼镍合金/铜/钼镍合金、镍铬合金/铜/镍铬合金、钛镍合金/铜/钛镍合金、钛铬合金/铜/钛铬合金或铜铌合金的其中一种膜层结构。\n\n[0032]所述绝缘层110位于所述源极1081、所述漏极1082以及所述层间绝缘层107之上，所述绝缘层110的材料可以为硅的氧化物、硅的氮化物、硅的氮氧化物或硅的氧化物/硅的氮化物叠层结构等。\n\n[0033]其中，所述第二金属层108之上且对应于所述微发光二极管绑定区A1和所述外围走线区A3设置有用于降低所述第二金属层108的反射率的减反层109，具体的，所述减反层109设置于所述第二金属层108远离所述衬底基板101一侧的表面。\n\n[0034]在一种实施例中，所述减反层109包括沿远离所述第二金属层108的方向依次层叠设置的第一减反层和第二减反层，所述第一减反层的材料为钼、钼的合金或钼的氧化物，所述第二减反层的材料为氧化铟锡或氧化铟锌。例如为钼/氧化铟锡、钼/氧化铟锌、钼钛合金/氧化铟锡、钼钛合金/氧化铟锌、钼钛镍合金/氧化铟锡、钼钛镍合金/氧化铟锌、钼的氧化物/氧化铟锡或钼的氧化物/氧化铟锌的叠层结构。\n\n[0035]可以理解的是，本发明实施例通过在所述第二金属层108之上且对应于所述微发光二极管绑定区A1和所述外围走线区A3设置减反层109，所述减反层109可以降低微发光二极管112的绑定端以及微发光二极管显示面板的外围走线区A3的金属接线垫(即电源线的正极1083或负极1084)对环境光的反射，提高微发光二极管显示面板的对比度，提升微发光二极管显示面板的显示品质，还可以降低金属接线垫的阻抗，改善电源线的电压降。\n\n[0036]需要说明的是，不是所有的电源线的负极1084均与微发光二极管112绑定，即电源线的一部分负极与所述微发光二极管112绑定，电源线的另一部分负极与像素电路中的其他接线端电性连接，由于像素电路并非本发明重点，在此不进行过多描述。\n\n[0037]在一种实施例中，所述微发光二极管显示面板还包括位于所述绝缘层110之上的遮光层111以及位于所述减反层109之上的所述微发光二极管112，具体的，所述遮光层111为黑色光阻层，用于避免相邻的微发光二极管之间相互串扰以及为所述有源层104遮光，所述微发光二极管112通过导电胶113与其下方的所述减反层109固定连接。\n\n[0038]接下来，请参阅图2，为本发明实施例提供的另一微发光二极管显示面板的基本结构示意图，与图1提供的微发光二极管显示面板的基本结构不同的是，位于所述微发光二极管绑定区A1的所述源极1081和所述电源线的负极1084与所述减反层109之间设有一绝缘层110，所述源极1081和所述电源线的负极1084通过过孔与所述减反层109电性连接，位于所述外围走线区A3的所述电源线(正极1083或负极1084)与所述减反层109层叠设置，即所述绝缘层110对应于所述微发光二极管绑定区A1(如图1)和所述遮光区A2(如图1)设置，即位于所述源极1081之上的减反层109既可以充当像素电极给所述微发光二极管112供电，又具有降低反射率的功能。\n\n[0039]接下来，请参阅图3，为本发明实施例提供的又一微发光二极管显示面板的基本结构示意图，与图1提供的微发光二极管显示面板的基本结构不同的是，所述漏极1082之上也设置有所述减反层109，具体的，图1中的减反层109是在所述绝缘层110之后制备的，而本实施例的减反层109是在所述绝缘层110之前制备的，可以与所述第二金属层108一同进行曝光、显影，节约一道光罩制程，降低生产成本，提高生产效率。\n\n[0040]接下来，请参阅图4，为本发明实施例提供的微发光二极管显示面板的制备方法流程图，所述制备方法包括步骤：\n\n[0041]S201、提供一衬底基板；\n\n[0042]S202、在所述衬底基板之上制备第一金属层；\n\n[0043]S203、在所述第一金属层之上制备层间绝缘层；\n\n[0044]S204、在所述层间绝缘层之上制备第二金属层；\n\n[0045]S205、在所述第二金属层之上制备绝缘层；以及\n\n[0046]S206、在所述第二金属层之上且对应于所述微发光二极管绑定区和所述外围走线区制备用于降低所述第二金属层的反射率的减反层。\n\n[0047]接下来，请参阅图5a～图5i，为本发明实施例提供的微发光二极管显示面板的制备工艺流程中各部件的基本结构示意图，首先如图5a所示，提供一衬底基板101，所述衬底基板101可以为玻璃等无机物，也可以为聚酰亚胺等有机物；然后在所述衬底基板101之上进行金属膜层镀膜，所述金属膜层可以为钼、铝/钼、钼/铜、钼钛合金/铜、钼钛合金/铜/钼钛合金、钛/铝/钛、钛/铜/钛、钼/铜/氧化铟锌、氧化铟锌/铜/氧化铟锌、钼/铜/氧化铟锡、镍/铜/镍、钼钛镍合金/铜/钼钛镍合金、钼镍合金/铜/钼镍合金、镍铬合金/铜/镍铬合金、钛镍合金/铜/钛镍合金、钛铬合金/铜/钛铬合金、铜铌合金、钼/铜/钼的氧化物、钼钛合金/铜/钼的氧化物、钼钛镍合金/铜/钼的氧化物、钼/铜/钼钛镍合金/氧化铟锌、钼钛镍合金/铜/钼钛镍合金/氧化铟锌或钼钛合金/铜/钼钛镍合金/氧化铟锌的其中一种膜层结构，然后对其进行图案化，得到遮光金属层102。\n\n[0048]接下来，如图5b所示，在所述衬底基板101之上进行缓冲层103镀膜，所述缓冲层103覆盖所述遮光金属层102，所述缓冲层103的材料可以为硅的氧化物、硅的氮化物、硅的氮化物/硅的氧化物叠层结构或硅的氮氧化物等；然后进行半导体层镀膜，半导体材料可以为氧化物半导体或其他类型半导体，然后对半导体层进行图案化，得到有源层104。\n\n[0049]接下来，如图5c所示，在所述缓冲层103之上进行绝缘层镀膜，绝缘层材料可以为硅的氧化物、硅的氮化物、氧化铝/硅的氮化物/硅的氧化物叠层结构或硅的氧化物/硅的氮化物/硅的氧化物叠层结构等；然后在所述绝缘层之上进行第一金属层106镀膜，第一金属层106为钼的氧化物/铜、氧化铟锌/钼/铜、氧化铟锌/钼钛合金/铜、氧化铟锌/钼钛镍合金/铜、氧化铟锡/钼/铜、氧化铟锡/钼钛镍合金/铜、钼、铝/钼、钼/铜、钼钛合金/铜、钼钛合金/铜/钼钛合金、钛/铝/钛、钛/铜/钛、钼/铜/氧化铟锌、氧化铟锌/铜/氧化铟锌、钼/铜/氧化铟锡、镍/铜/镍、钼钛镍合金/铜/钼钛镍合金、钼镍合金/铜/钼镍合金、镍铬合金/铜/镍铬合金、钛镍合金/铜/钛镍合金、钛铬合金/铜/钛铬合金或铜铌合金的其中一种膜层结构；然后对所述第一金属层106进行图案化，得到栅极1061和数据线1062，利用栅极自对准工艺对所述绝缘层进行图案化，得到栅绝缘层105。\n\n[0050]接下来，如图5d所示，在所述缓冲层103之上进行层间绝缘层107镀膜，所述层间绝缘层107的材料可以为硅的氧化物、硅的氮化物或硅的氮氧化物等，然后对其进行图案化，形成分别对应于所述有源层104两端的第一过孔和第二过孔、对应于所述遮光金属层102一端的第三过孔。\n\n[0051]接下来，如图5e所示，在所述层间绝缘层107之上进行第二金属层108镀膜，所述第二金属层膜层为钼、铝/钼、钼/铜、钼钛合金/铜、钼钛合金/铜/钼钛合金、钛/铝/钛、钛/铜/钛、钼/铜/氧化铟锌、氧化铟锌/铜/氧化铟锌、钼/铜/氧化铟锡、镍/铜/镍、钼钛镍合金/铜/钼钛镍合金、钼镍合金/铜/钼镍合金、镍铬合金/铜/镍铬合金、钛镍合金/铜/钛镍合金、钛铬合金/铜/钛铬合金或铜铌合金的其中一种膜层结构，然后对其进行图案化处理，得到源极1081、漏极1082以及电源线的正极1083和负极1084，其中，所述源极1081通过所述第一过孔与所述有源层104的一端电性连接，所述漏极1082通过所述第二过孔与所述有源层104的另一端电性连接，所述源极1081通过所述第三过孔与所述遮光金属层102的一端电性连接。\n\n[0052]接下来，如图5f所示，在所述层间绝缘层107之上进行绝缘层镀膜并进行图案化，图案化后的所述绝缘层110位于所述源极1081、所述漏极1082以及所述层间绝缘层107之上，所述绝缘层110的材料可以为硅的氧化物、硅的氮化物、硅的氮氧化物或硅的氧化物/硅的氮化物叠层结构等。\n\n[0053]接下来，如图5g所示，在所述层间绝缘层107之上进行减反层镀膜并图案化，图案化后的所述减反层109位于所述源极1081、所述电源线的正极1083和负极1084之上，所述减反层109为钼/氧化铟锡、钼/氧化铟锌、钼钛合金/氧化铟锡、钼钛合金/氧化铟锌、钼钛镍合金/氧化铟锡、钼钛镍合金/氧化铟锌、钼的氧化物/氧化铟锡或钼的氧化物/氧化铟锌的其中一种膜层结构。\n\n[0054]接下来，如图5h和5i所示，在所述绝缘层110之上进行遮光层111的制作以及在所述减反层109之上绑定微发光二极管112，完成所述微发光二极管显示面板的制备。具体的，所述源极1081与所述微发光二极管112的其中之一绑定端电性连接，所述微发光二极管112的其中另一绑定端与所述电源线的负极1084电性连接。\n\n[0055]本发明实施例还提供一种显示装置，包括上述的微发光二极管显示面板，所述微发光二极管显示面板的结构及制备方法请参见图1至图5i及相关描述，在此不再赘述。本发明实施例提供的显示装置可以为：手机、平板电脑、笔记本电脑、数码相机、导航仪等具有显示功能的产品或部件。\n\n[0056]综上所述，本发明实施例提供的一种微发光二极管显示面板，通过在第二金属层之上且对应于微发光二极管绑定区和外围走线区设置减反层，所述减反层可以降低所述第二金属层对环境光的反射，提高微发光二极管显示面板的对比度，提升微发光二极管显示面板的显示品质，解决了由于现有技术的微发光二极管显示面板的源极、电源线的负极以及外围走线区内的多个金属接线垫反光造成的微发光二极管显示面板的对比度降低，影响微发光二极管显示面板的显示品质的技术问题。\n\n[0057]以上对本发明实施例所提供的一种微发光二极管显示面板及其制备方法、显示装置进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。');
INSERT INTO `os_patent_instruction_text` VALUES (10915, 23969, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示面板和显示装置。\n\n背景技术\n\n[0002]与OLED(Organic Light emitting Display，有机发光二极管显示器)相比，miniLED(mini Light Emitting Diode，亚毫米发光二极管)作为一种无机物LED具有更高的稳定性和亮度等优点，而将QD(quantum dots，量子点)与miniLED相结合的QD-miniLED显示技术更具发展潜力。QD-miniLED器件是以蓝光miniLED作为背光，利用蓝光产生的高能光子激发红色量子点或绿色量子点产生相应的红光或绿光，从而实现全彩化显示。\n\n[0003]QD-miniLED有多种器件结构，而研究较多的是量子点彩膜结构。这种结构包括两块玻璃基板，分别为QD基板和miniLED基板，需要将这两块基板进行精准对位后贴合以形成完整器件。由于贴合用的框胶有一定厚度，因此贴合后的基板之间会存在间隙，如此在miniLED的出光角度较大时，将导致某个像素的miniLED的出射光照到相邻像素产生光串扰现象。\n\n[0004]因此，现有QD-miniLED器件存在光串扰的问题需要解决。\n\n发明内容\n\n[0005]本发明提供一种显示面板和显示装置，以缓解现有QD-miniLED器件存在光串扰的技术问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明实施例提供一种显示面板，其包括背光基板以及与所述背光基板相对设置的量子点彩膜基板，其中所述背光基板包括驱动背板、多个LED芯片、阻挡层以及控光构件。多个所述LED芯片绑定于所述驱动背板上，且相邻所述LED芯片之间具有间隔。所述阻挡层设置于所述间隔内，用于阻挡所述LED芯片的侧面出射光。所述控光构件设置于所述阻挡层以及所述LED芯片上，用于收敛所述LED芯片的出光角度。其中，所述控光构件包括层叠交替设置的至少一层封装胶层和至少一层吸光层，所述吸光层设置于所述封装胶层上，且所述吸光层在对应所述LED芯片的出光方向上形成有第一开孔。\n\n[0008]在本发明实施例提供的显示面板中，所述控光构件包括层叠交替设置的三层所述封装胶层和三层所述吸光层。\n\n[0009]在本发明实施例提供的显示面板中，所述吸光层的厚度为1微米，且所述封装胶层的厚度为8微米。\n\n[0010]在本发明实施例提供的显示面板中，所述吸光层的所述第一开孔的宽度等于所述LED芯片的宽度。\n\n[0011]在本发明实施例提供的显示面板中，所述吸光层的材料包括黑色矩阵。\n\n[0012]在本发明实施例提供的显示面板中，所述吸光层在对应所述阻挡层的位置设置有第二开孔，所述第二开孔的宽度小于所述阻挡层的宽度。\n\n[0013]在本发明实施例提供的显示面板中，所述第一开孔包括方形孔、圆形孔和异形孔中的一种。\n\n[0014]在本发明实施例提供的显示面板中，所述阻挡层的材料包括黑色胶材、灰色胶材和黑色油墨中的一种。\n\n[0015]在本发明实施例提供的显示面板中，所述阻挡层的宽度小于或等于所述LED芯片之间的所述间隔。\n\n[0016]本发明实施例还提供一种显示装置，其包括前述实施例其中之一的显示面板。\n\n[0017]本发明的有益效果为：本发明提供的显示面板和显示装置中在LED芯片之间的间隔内设置阻挡层，以阻挡LED芯片之间的侧面光串扰，并在阻挡层以及LED芯片上设置层叠交替设置的封装胶层和吸光层作为控光构件，以收敛LED芯片的出光角度，避免了某个像素的miniLED的出射光照到相邻像素，解决了现有QD-miniLED器件存在光串扰的问题。\n\n附图说明\n\n[0018]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1为本发明实施例提供的显示面板的第一种剖面结构示意图；\n\n[0020]图2为本发明实施例提供的显示面板的第二种剖面结构示意图；\n\n[0021]图3为本发明实施例提供的显示面板的第三种剖面结构示意图；\n\n[0022]图4为本发明实施例提供的显示面板制备方法的流程示意图；\n\n[0023]图5至图11为本发明实施例提供的显示面板制备方法中各步骤制得的显示面板的剖面结构示意图。\n\n具体实施方式\n\n[0024]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。在附图中，为了清晰理解和便于描述，夸大了一些层和区域的厚度。即附图中示出的每个组件的尺寸和厚度是任意示出的，但是本发明不限于此。\n\n[0025]请参照图1，图1为本发明实施例提供的显示面板的第一种剖面结构示意图。所述显示面板100包括背光基板1以及与所述背光基板1相对设置的量子点彩膜基板2，所述背光基板1与所述量子点彩膜基板2之间通过透明光学胶(Optically Clear Adhesive，OCA)3对位贴合。其中所述背光基板1包括驱动背板10、多个LED芯片11、阻挡层12以及控光构件13。多个所述LED芯片11绑定于所述驱动背板10上，且相邻所述LED芯片11之间具有间隔。所述阻挡层12设置于所述间隔内，用于阻挡所述LED芯片11的侧面出射光。所述控光构件13设置于所述阻挡层12以及所述LED芯片11上，用于收敛所述LED芯片11的出光角度。其中，所述控光构件13包括层叠交替设置的至少一层封装胶层131和至少一层吸光层132，所述吸光层132设置于所述封装胶层131上，且所述吸光层132在对应所述LED芯片11的出光方向上形成有第一开孔1321。\n\n[0026]所述LED芯片11包括miniLED芯片，所述miniLED芯片通常先制备在转移基板上，然后再转移到所述驱动背板10上，与所述驱动背板10绑定。所述驱动背板10上设置有像素驱动电路(图未示)，每个LED芯片11均可对应电连接一个像素驱动电路，从而使得每个LED芯片11均可独立发光。每个LED芯片11除了存在正面出射光，还存在侧面出射光，而侧面出射光会导致相邻LED芯片11之间的光串扰。需要说明的是，LED芯片11的正面出射光是指LED芯片11面向所述量子点彩膜基板2的出光面发出的光，LED芯片11的侧面出射光是指LED芯片11垂直于所述量子点彩膜基板2的出光面发出的光。\n\n[0027]本实施例通过在LED芯片11之间的间隔内设置阻挡层12，可避免侧面光串扰现象。所述阻挡层12的材料包括黑色胶材、灰色胶材和黑色油墨等遮光材料中的至少一种。把遮光材料制备在所述LED芯片11之间的间隔内，遮光材料能够阻挡所述LED芯片11的部分侧面出射光，防止该侧面出射光进入相邻的LED芯片11，从而避免了LED芯片11的侧面光串扰现象，提高了显示面板100的显示效果。\n\n[0028]把遮光材料制备在所述LED芯片11之间的间隔内可采用多种工艺。比如可采用喷墨打印(Ink jet Print，IJP)工艺把遮光材料打印在所述LED芯片11之间的间隔内，但因工艺限制，所述阻挡层12的宽度L3会小于所述LED芯片11之间的间隔距离L4，如图1所示。或者也可以采用压胶工艺把遮光材料直接挤压在所述LED芯片11之间的间隔内，如此可使遮光材料填充所述LED芯片11之间的间隔，所述阻挡层12的宽度等于所述LED芯片11之间的间隔距离。\n\n[0029]所述阻挡层12的厚度可以等于或稍微大于所述LED芯片11的厚度。当所述阻挡层12的厚度稍微大于所述LED芯片11的厚度时，可以更好的阻挡所述LED芯片11的侧面出射光，避免LED芯片11的侧面光串扰。\n\n[0030]可以理解的是，所述背光基板1与所述量子点彩膜基板2之间通过透明光学胶3对位贴合，所述透明光学胶3具有一定的厚度，使得所述LED芯片11和所述量子点彩膜基板2之间存在间隙。当LED芯片11的正面出射光的出光角度较大时，仍会出现相邻LED芯片11之间的光串扰现象，而所述阻挡层12因工艺限制设置的膜厚不能高出所述LED芯片11太多，否则可能会导致膜层剥离(peeling)，因此所述阻挡层12并不能解决LED芯片11的正面出射光的光串扰问题。\n\n[0031]本发明实施例通过在所述阻挡层12及所述LED芯片11上设置控光构件13来解决LED芯片11的正面出射光的光串扰问题。所述控光构件13包括层叠交替设置的至少一层封装胶层131和至少一层吸光层132，所述吸光层132设置于所述封装胶层131上。所述封装胶层131直接覆盖在所述阻挡层12及所述LED芯片11上，可以理解的是，当所述阻挡层12的宽度L3小于所述LED芯片11之间的间隔距离L4时，所述封装胶层131还填充在所述阻挡层12与所述LED芯片11之间的间隙内。所述封装胶层131的材料包括OC胶等透明封装胶材，透明封装胶材的透光性越好，所述LED芯片11的出射光的光损失就越小。所述封装胶层131能够平衡段差提供平坦的表面，同时还可保护所述驱动背板10上的LED芯片11，以阻隔水氧等。\n\n[0032]所述吸光层132设置在所述封装胶层131远离所述LED芯片11的表面上，所述吸光层132的材料包括黑色矩阵(Black Matrix，BM)等具有吸光性能的材料。所述吸光层132在对应所述LED芯片11的出光方向上形成有第一开孔1321，所述第一开孔1321的宽度L1等于所述LED芯片11的宽度L2，也即所述吸光层132对应所述LED芯片11之间的间隔设置，相邻两个所述第一开孔1321之间的吸光层132的宽度等于所述LED芯片11之间的间隔距离。如此，所述LED芯片11的正面出射光中的杂散光线会被所述吸光层132吸收，以收敛所述LED芯片11的出光角度，避免相邻LED芯片11之间的光串扰。其中所述杂散光线是指所述LED芯片11的出射光中会导致光串扰的那部分光线，也即所述LED芯片11出光角度内的边界光线。同时，对于所述阻挡层12的宽度L3小于所述LED芯片11之间间隔距离L4的情况，所述阻挡层12与所述LED芯片11之间的间隙还可能存在漏光，而所述吸光层132还可吸收该间隙漏出的光线。\n\n[0033]所述第一开孔1321包括方形孔、圆形孔和异形孔等开孔中的一种，但本发明不限于此，本发明的所述第一开孔1321的形状可以根据所述LED芯片11的规格来确定。\n\n[0034]需要说明的是，所述封装胶层131和所述吸光层132的厚度可根据所述LED芯片11需要收敛的出光角度来确定。所述LED芯片11的出光角度被收敛后，其出射光经过所述量子点彩膜基板2后可以发出红绿蓝三基色的光，以实现全彩显示。\n\n[0035]所述量子点彩膜基板2包括衬底基板20、设置在所述衬底基板20上的量子点彩膜21以及设置在所述量子点彩膜21之间的遮光层22。所述衬底基板20包括玻璃基板等透明的衬底材料。所述遮光层22的材料包括黑色矩阵，所述遮光层22与所述LED芯片11之间的间隔相对应设置，也即所述遮光层22与所述阻挡层12和所述吸光层132相对应设置，所述遮光层22用于遮挡所述LED芯片11的无效光线(即对显示面板100的显示没有贡献的光线)，避免所述显示面板100漏光。所述量子点彩膜21与所述LED芯片11相对应设置，所述量子点彩膜21包括红色量子点彩膜211和绿色量子点彩膜212。所述红色量子点彩膜211和所述绿色量子点彩膜212分别由红色量子点材料和绿色量子点材料制成，绿色量子点的粒径较小，红色量子点的粒径较大，红色量子点受光激发发射红光，绿色量子点受光激发发射绿光。量子点材料具有高发光效率、高色纯度、广色域等优点，故使用量子点材料作彩膜，能够为显示面板100提供更加逼真的色彩显示。\n\n[0036]所述LED芯片11可为蓝光LED芯片，用于发射蓝光。所述LED芯片11发出的蓝光经过所述红色量子点彩膜211后被转换成红光，所述LED芯片11发出的蓝光经过所述绿色量子点彩膜212后被转换成绿光。\n\n[0037]所述显示面板100包括多个像素单元，每个像素单元包括至少三个LED芯片11，如图1示意性示出了显示面板100的一个像素单元包括三个LED芯片11，其中一个LED芯片11对应红色量子点彩膜211，一个LED芯片11对应绿色量子点彩膜212，而另外一个LED芯片11所对应的量子点彩膜基板2的区域为透明区域，该透明区域不设置量子点彩膜21，可在该透明区域设置透明材料，使LED芯片11发出的蓝光直接透过。如此，像素单元内的LED芯片11发出的蓝光经过所述量子点彩膜基板2后，可以发出红绿蓝三基色的光，以实现全彩显示。\n\n[0038]可以理解的是，发蓝光的LED芯片11更易制作，且蓝光的能量高，更容易激发红色量子点材料以及绿色量子点材料分别发出红光和绿光，更易实现全彩显示。当然地，本发明不限于此，本发明的所述LED芯片11也可以为发射红光或绿光的LED芯片，相对应的，所述量子点彩膜21可以设置为蓝色量子点彩膜和绿色量子点彩膜或红色量子点彩膜和蓝色量子点彩膜。\n\n[0039]在本实施例的显示面板100中，在LED芯片11之间的间隔内设置阻挡层12，以阻挡LED芯片11之间的侧面光串扰，并在阻挡层12以及LED芯片11上设置层叠交替设置的封装胶层131和吸光层132作为控光构件13，以收敛LED芯片11的出光角度，避免了某个像素的miniLED的出射光照到相邻像素，解决了现有QD-miniLED器件存在光串扰的问题。同时本发明实施例的显示面板100集合了miniLED与量子点的优势，可使得显示面板100具有低功耗、高性能、长寿命等优点。\n\n[0040]在一种实施例中，请参照图2，图2为本发明实施例提供的显示面板的第二种剖面结构示意图。与上述实施例不同的是，所述显示面板101的控光构件13包括层叠交替设置的三层封装胶层131和三层吸光层132。三层吸光层132的结构相同，且所述吸光层132的第一开孔1321被所述封装胶层131填充，可以理解的是，由于所述控光构件13的顶层膜层为吸光层132，顶层的吸光层132上面为透明光学胶3，故顶层的吸光层132的第一开孔1321被所述透明光学胶3填充。其中所述吸光层132的厚度为1微米，所述封装胶层131的厚度为8微米。当然地，本发明实施例的控光构件13不限于示意性列举的由三层封装胶层131和三层吸光层132层叠交替设置形成，所述控光构件13也可以由更多层的封装胶层131和吸光层132层叠交替设置形成，具体的层数可根据所述LED芯片11需要收敛的出光角度来确定。而且所述吸光层132的厚度和所述封装胶层131的厚度也不限于本实施例列举的，所述吸光层132的厚度和所述封装胶层131的厚度也可根据所述LED芯片11需要收敛的出光角度来确定。其他说明请参照上述实施例，在此不再赘述。\n\n[0041]在一种实施例中，请参照图3，图3为本发明实施例提供的显示面板的第三种剖面结构示意图。与上述实施例不同的是，所述显示面板102的所述吸光层132在对应所述阻挡层12的位置设置有第二开孔1322，所述第二开孔1322的宽度小于所述阻挡层12的宽度。也即在相邻的两个第一开孔1321之间的吸光层132上还设置有第二开孔1322，第二开孔1322对应所述阻挡层12设置。通过设置第二开孔1322，使所述控光构件13在满足收敛LED芯片11的出光角度的前提下，还可以减少吸光层132使用的材料，以节约成本。其他说明请参照上述实施例，在此不再赘述。\n\n[0042]在一种实施例中，请参照图4至图11，图4为本发明实施例提供的显示面板制备方法的流程示意图，图5至图11为本发明实施例提供的显示面板制备方法中各步骤制得的显示面板的剖面结构示意图。所述显示面板制备方法包括以下步骤：\n\n[0043]步骤S301，提供转移基板40，在所述转移基板40上制备多个LED芯片11。\n\n[0044]具体地，可采用金属有机化合物化学气相沉积(Metal-organic ChemicalVaporDeposition，MOVCD)、分子束外延(Molecular Beam Epitaxy，MBE)或者氢化物气相外延(Hydride Vapor Phase Epitaxy，HVPE)等方式在转移基板40上制备多个LED芯片11，多个LED芯片11阵列排布，如图5所示。其中所述LED芯片11可以为发射蓝光的LED芯片11，所述转移基板40包括蓝宝石衬底等。\n\n[0045]步骤S302，提供驱动背板10，把所述转移基板40上的多个所述LED芯片11对应转移到所述驱动背板10上，并与所述驱动背板10绑定。\n\n[0046]具体地，参照图6，提供驱动背板10，采用传统的打件工艺或各项异性导电胶(ACF)工艺把所述转移基板40上的多个所述LED芯片11对应转移到所述驱动背板10上，并加热完成固晶，使所述LED芯片11紧密连接在所述驱动背板10上。所述驱动背板10上设置有像素驱动电路(图未示)，每个LED芯片11均可对应电连接一个像素驱动电路，从而使得每个LED芯片11均可独立发光，以实现所述LED芯片11与所述驱动背板10的绑定。在完成所述LED芯片11与所述驱动背板10的绑定后，剥离掉所述转移基板40，形成如图7所示的结构，所述LED芯片11在所述驱动背板10仍阵列排布，所述LED芯片11之间具有间隔。\n\n[0047]步骤S303，在所述LED芯片11之间的间隔内制备阻挡层12。\n\n[0048]具体地，参照图8，采用喷墨打印工艺在所述驱动背板10上的所述LED芯片11之间的间隔中打印阻挡层12。所述阻挡层12的材料包括黑色胶材、灰色胶材和黑色油墨等遮光材料中的至少一种。采用喷墨打印工艺把遮光材料打印在所述LED芯片11之间的间隔内，但因工艺限制，所述阻挡层12的宽度L3会小于所述LED芯片11之间的间隔距离L4。所述阻挡层12的厚度可以等于或稍微大于所述LED芯片11的厚度。当所述阻挡层12的厚度稍微大于所述LED芯片11的厚度时，可以更好的阻挡所述LED芯片11的侧面出射光，避免LED芯片11的侧面光串扰，提高显示面板的显示效果。\n\n[0049]步骤S304，在所述LED芯片11及所述阻挡层12上制备控光构件13，以形成背光基板1。\n\n[0050]具体地，参照图9，在所述LED芯片11及所述阻挡层上制备第一层封装胶层131，所述第一层封装胶层131的厚度为8微米，所述第一层封装胶层131的材料为OC胶。所述第一层封装胶层131能够平衡段差提供平坦的表面，同时还可保护所述驱动背板10上的LED芯片11，以阻隔水氧等。可以理解的是，由于所述阻挡层12的宽度L3小于所述LED芯片11之间的间隔距离L4，故所述第一层封装胶层131还填充在所述阻挡层12与所述LED芯片11之间的间隙内。\n\n[0051]参照图10，在所述第一层封装胶层131上制备第一层吸光层132，所述第一层吸光层132的厚度为1微米，所述第一层吸光层132的材料为黑色矩阵等具有吸光性能的材料。所述第一层吸光层132在对应所述LED芯片11的出光方向上形成有第一开孔1321，所述第一开孔1321的宽度L1等于所述LED芯片11的宽度L2，也即所述第一层吸光层132对应所述LED芯片11之间的间隔设置，相邻两个所述第一开孔1321之间的所述第一层吸光层132的宽度等于所述LED芯片11之间的间隔距离。所述第一层吸光层132能够吸收所述LED芯片11的正面出射光中的杂散光线，以收敛所述LED芯片11的出光角度。\n\n[0052]参照图11，采用与制备所述第一层封装胶层131同样的工艺和材料制备第二层封装胶层131和第三层封装胶层131，三层封装胶层131的厚度相同，均为8微米；采用与制备所述第一层吸光层132同样的工艺和材料制备第二层吸光层132和第三层吸光层132，三层吸光层132的厚度相同，均为1微米。其中所述第二层封装胶层131位于所述第一层吸光层132上，所述第二层吸光层132位于所述第二层封装胶层131上，所述第三层封装胶层131位于所述第二层吸光层132上，所述第三层吸光层132位于所述第三层封装胶层131上，三层封装胶层131和三层吸光层132层叠交替设置，组成控光构件13，至此形成背光基板1。所述控光构件13能够收敛LED芯片11的出光角度，避免某个像素的miniLED的出射光照到相邻像素产生光串扰。\n\n[0053]步骤S305，提供量子点彩膜基板2，将所述量子点彩膜基板2和所述背光基板1对位贴合，以形成显示面板101，如图2所示。\n\n[0054]具体地，参照图2，通过透明光学胶3把所述量子点彩膜基板2和所述背光基板1对位贴合，形成所述显示面板101。所述量子点彩膜基板2包括衬底基板20、设置在所述衬底基板20上的量子点彩膜21以及设置在所述量子点彩膜21之间的遮光层22。所述衬底基板20包括玻璃基板等透明的衬底材料。所述遮光层22的材料包括黑色矩阵，所述遮光层22与所述LED芯片11之间的间隔相对应设置。所述量子点彩膜21与所述LED芯片11相对应设置，所述量子点彩膜21包括红色量子点彩膜211和绿色量子点彩膜212。所述LED芯片11可为蓝光LED芯片11，用于发射蓝光。所述LED芯片11发出的蓝光经过所述红色量子点彩膜211后被转换成红光，所述LED芯片11发出的蓝光经过所述绿色量子点彩膜212后被转换成绿光。\n\n[0055]所述显示面板101包括多个像素单元，每个像素单元包括至少三个LED芯片11，如图2示意性示出了显示面板101的一个像素单元包括三个LED芯片11，其中一个LED芯片11对应红色量子点彩膜211，一个LED芯片11对应绿色量子点彩膜212，而另外一个LED芯片11所对应的量子点彩膜基板2的区域为透明区域，该透明区域不设置量子点彩膜21，可在该透明区域设置透明材料，使LED芯片11发出的蓝光直接透过。如此，该像素单元内的LED芯片11发出的蓝光经过所述量子点彩膜基板2后，可以发出红绿蓝三基色的光，以实现全彩显示。\n\n[0056]需要说明的是，本实施例的显示面板制备方法仅以制备上述实施例其中之一的显示面板101为例说明，但不限于此，本发明的显示面板制备方法可以制备上述实施例中任一所述显示面板。\n\n[0057]本发明实施例还提供一种显示装置，其包括前述实施例其中之一的显示面板、绑定于所述显示面板的电路板等器件以及覆盖在所述显示面板上的盖板等。\n\n[0058]根据上述实施例可知：\n\n[0059]本发明提供一种显示面板和显示装置，显示面板包括背光基板以及与所述背光基板相对设置的量子点彩膜基板，其中所述背光基板包括驱动背板、多个LED芯片、阻挡层以及控光构件，多个所述LED芯片绑定于所述驱动背板上，且相邻所述LED芯片之间具有间隔，所述阻挡层设置于所述间隔内，用于阻挡所述LED芯片的侧面出射光，所述控光构件设置于所述阻挡层以及所述LED芯片上，以收敛LED芯片的出光角度，避免了某个像素的miniLED的出射光照到相邻像素，解决了现有QD-miniLED器件存在光串扰的问题。\n\n[0060]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示面板和显示装置。\n\n背景技术\n\n[0002]与OLED(Organic Light emitting Display，有机发光二极管显示器)相比，miniLED(mini Light Emitting Diode，亚毫米发光二极管)作为一种无机物LED具有更高的稳定性和亮度等优点，而将QD(quantum dots，量子点)与miniLED相结合的QD-miniLED显示技术更具发展潜力。QD-miniLED器件是以蓝光miniLED作为背光，利用蓝光产生的高能光子激发红色量子点或绿色量子点产生相应的红光或绿光，从而实现全彩化显示。\n\n[0003]QD-miniLED有多种器件结构，而研究较多的是量子点彩膜结构。这种结构包括两块玻璃基板，分别为QD基板和miniLED基板，需要将这两块基板进行精准对位后贴合以形成完整器件。由于贴合用的框胶有一定厚度，因此贴合后的基板之间会存在间隙，如此在miniLED的出光角度较大时，将导致某个像素的miniLED的出射光照到相邻像素产生光串扰现象。\n\n[0004]因此，现有QD-miniLED器件存在光串扰的问题需要解决。\n\n发明内容\n\n[0005]本发明提供一种显示面板和显示装置，以缓解现有QD-miniLED器件存在光串扰的技术问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明实施例提供一种显示面板，其包括背光基板以及与所述背光基板相对设置的量子点彩膜基板，其中所述背光基板包括驱动背板、多个LED芯片、阻挡层以及控光构件。多个所述LED芯片绑定于所述驱动背板上，且相邻所述LED芯片之间具有间隔。所述阻挡层设置于所述间隔内，用于阻挡所述LED芯片的侧面出射光。所述控光构件设置于所述阻挡层以及所述LED芯片上，用于收敛所述LED芯片的出光角度。其中，所述控光构件包括层叠交替设置的至少一层封装胶层和至少一层吸光层，所述吸光层设置于所述封装胶层上，且所述吸光层在对应所述LED芯片的出光方向上形成有第一开孔。\n\n[0008]在本发明实施例提供的显示面板中，所述控光构件包括层叠交替设置的三层所述封装胶层和三层所述吸光层。\n\n[0009]在本发明实施例提供的显示面板中，所述吸光层的厚度为1微米，且所述封装胶层的厚度为8微米。\n\n[0010]在本发明实施例提供的显示面板中，所述吸光层的所述第一开孔的宽度等于所述LED芯片的宽度。\n\n[0011]在本发明实施例提供的显示面板中，所述吸光层的材料包括黑色矩阵。\n\n[0012]在本发明实施例提供的显示面板中，所述吸光层在对应所述阻挡层的位置设置有第二开孔，所述第二开孔的宽度小于所述阻挡层的宽度。\n\n[0013]在本发明实施例提供的显示面板中，所述第一开孔包括方形孔、圆形孔和异形孔中的一种。\n\n[0014]在本发明实施例提供的显示面板中，所述阻挡层的材料包括黑色胶材、灰色胶材和黑色油墨中的一种。\n\n[0015]在本发明实施例提供的显示面板中，所述阻挡层的宽度小于或等于所述LED芯片之间的所述间隔。\n\n[0016]本发明实施例还提供一种显示装置，其包括前述实施例其中之一的显示面板。\n\n[0017]本发明的有益效果为：本发明提供的显示面板和显示装置中在LED芯片之间的间隔内设置阻挡层，以阻挡LED芯片之间的侧面光串扰，并在阻挡层以及LED芯片上设置层叠交替设置的封装胶层和吸光层作为控光构件，以收敛LED芯片的出光角度，避免了某个像素的miniLED的出射光照到相邻像素，解决了现有QD-miniLED器件存在光串扰的问题。\n\n附图说明\n\n[0018]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1为本发明实施例提供的显示面板的第一种剖面结构示意图；\n\n[0020]图2为本发明实施例提供的显示面板的第二种剖面结构示意图；\n\n[0021]图3为本发明实施例提供的显示面板的第三种剖面结构示意图；\n\n[0022]图4为本发明实施例提供的显示面板制备方法的流程示意图；\n\n[0023]图5至图11为本发明实施例提供的显示面板制备方法中各步骤制得的显示面板的剖面结构示意图。\n\n具体实施方式\n\n[0024]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。在附图中，为了清晰理解和便于描述，夸大了一些层和区域的厚度。即附图中示出的每个组件的尺寸和厚度是任意示出的，但是本发明不限于此。\n\n[0025]请参照图1，图1为本发明实施例提供的显示面板的第一种剖面结构示意图。所述显示面板100包括背光基板1以及与所述背光基板1相对设置的量子点彩膜基板2，所述背光基板1与所述量子点彩膜基板2之间通过透明光学胶(Optically Clear Adhesive，OCA)3对位贴合。其中所述背光基板1包括驱动背板10、多个LED芯片11、阻挡层12以及控光构件13。多个所述LED芯片11绑定于所述驱动背板10上，且相邻所述LED芯片11之间具有间隔。所述阻挡层12设置于所述间隔内，用于阻挡所述LED芯片11的侧面出射光。所述控光构件13设置于所述阻挡层12以及所述LED芯片11上，用于收敛所述LED芯片11的出光角度。其中，所述控光构件13包括层叠交替设置的至少一层封装胶层131和至少一层吸光层132，所述吸光层132设置于所述封装胶层131上，且所述吸光层132在对应所述LED芯片11的出光方向上形成有第一开孔1321。\n\n[0026]所述LED芯片11包括miniLED芯片，所述miniLED芯片通常先制备在转移基板上，然后再转移到所述驱动背板10上，与所述驱动背板10绑定。所述驱动背板10上设置有像素驱动电路(图未示)，每个LED芯片11均可对应电连接一个像素驱动电路，从而使得每个LED芯片11均可独立发光。每个LED芯片11除了存在正面出射光，还存在侧面出射光，而侧面出射光会导致相邻LED芯片11之间的光串扰。需要说明的是，LED芯片11的正面出射光是指LED芯片11面向所述量子点彩膜基板2的出光面发出的光，LED芯片11的侧面出射光是指LED芯片11垂直于所述量子点彩膜基板2的出光面发出的光。\n\n[0027]本实施例通过在LED芯片11之间的间隔内设置阻挡层12，可避免侧面光串扰现象。所述阻挡层12的材料包括黑色胶材、灰色胶材和黑色油墨等遮光材料中的至少一种。把遮光材料制备在所述LED芯片11之间的间隔内，遮光材料能够阻挡所述LED芯片11的部分侧面出射光，防止该侧面出射光进入相邻的LED芯片11，从而避免了LED芯片11的侧面光串扰现象，提高了显示面板100的显示效果。\n\n[0028]把遮光材料制备在所述LED芯片11之间的间隔内可采用多种工艺。比如可采用喷墨打印(Ink jet Print，IJP)工艺把遮光材料打印在所述LED芯片11之间的间隔内，但因工艺限制，所述阻挡层12的宽度L3会小于所述LED芯片11之间的间隔距离L4，如图1所示。或者也可以采用压胶工艺把遮光材料直接挤压在所述LED芯片11之间的间隔内，如此可使遮光材料填充所述LED芯片11之间的间隔，所述阻挡层12的宽度等于所述LED芯片11之间的间隔距离。\n\n[0029]所述阻挡层12的厚度可以等于或稍微大于所述LED芯片11的厚度。当所述阻挡层12的厚度稍微大于所述LED芯片11的厚度时，可以更好的阻挡所述LED芯片11的侧面出射光，避免LED芯片11的侧面光串扰。\n\n[0030]可以理解的是，所述背光基板1与所述量子点彩膜基板2之间通过透明光学胶3对位贴合，所述透明光学胶3具有一定的厚度，使得所述LED芯片11和所述量子点彩膜基板2之间存在间隙。当LED芯片11的正面出射光的出光角度较大时，仍会出现相邻LED芯片11之间的光串扰现象，而所述阻挡层12因工艺限制设置的膜厚不能高出所述LED芯片11太多，否则可能会导致膜层剥离(peeling)，因此所述阻挡层12并不能解决LED芯片11的正面出射光的光串扰问题。\n\n[0031]本发明实施例通过在所述阻挡层12及所述LED芯片11上设置控光构件13来解决LED芯片11的正面出射光的光串扰问题。所述控光构件13包括层叠交替设置的至少一层封装胶层131和至少一层吸光层132，所述吸光层132设置于所述封装胶层131上。所述封装胶层131直接覆盖在所述阻挡层12及所述LED芯片11上，可以理解的是，当所述阻挡层12的宽度L3小于所述LED芯片11之间的间隔距离L4时，所述封装胶层131还填充在所述阻挡层12与所述LED芯片11之间的间隙内。所述封装胶层131的材料包括OC胶等透明封装胶材，透明封装胶材的透光性越好，所述LED芯片11的出射光的光损失就越小。所述封装胶层131能够平衡段差提供平坦的表面，同时还可保护所述驱动背板10上的LED芯片11，以阻隔水氧等。\n\n[0032]所述吸光层132设置在所述封装胶层131远离所述LED芯片11的表面上，所述吸光层132的材料包括黑色矩阵(Black Matrix，BM)等具有吸光性能的材料。所述吸光层132在对应所述LED芯片11的出光方向上形成有第一开孔1321，所述第一开孔1321的宽度L1等于所述LED芯片11的宽度L2，也即所述吸光层132对应所述LED芯片11之间的间隔设置，相邻两个所述第一开孔1321之间的吸光层132的宽度等于所述LED芯片11之间的间隔距离。如此，所述LED芯片11的正面出射光中的杂散光线会被所述吸光层132吸收，以收敛所述LED芯片11的出光角度，避免相邻LED芯片11之间的光串扰。其中所述杂散光线是指所述LED芯片11的出射光中会导致光串扰的那部分光线，也即所述LED芯片11出光角度内的边界光线。同时，对于所述阻挡层12的宽度L3小于所述LED芯片11之间间隔距离L4的情况，所述阻挡层12与所述LED芯片11之间的间隙还可能存在漏光，而所述吸光层132还可吸收该间隙漏出的光线。\n\n[0033]所述第一开孔1321包括方形孔、圆形孔和异形孔等开孔中的一种，但本发明不限于此，本发明的所述第一开孔1321的形状可以根据所述LED芯片11的规格来确定。\n\n[0034]需要说明的是，所述封装胶层131和所述吸光层132的厚度可根据所述LED芯片11需要收敛的出光角度来确定。所述LED芯片11的出光角度被收敛后，其出射光经过所述量子点彩膜基板2后可以发出红绿蓝三基色的光，以实现全彩显示。\n\n[0035]所述量子点彩膜基板2包括衬底基板20、设置在所述衬底基板20上的量子点彩膜21以及设置在所述量子点彩膜21之间的遮光层22。所述衬底基板20包括玻璃基板等透明的衬底材料。所述遮光层22的材料包括黑色矩阵，所述遮光层22与所述LED芯片11之间的间隔相对应设置，也即所述遮光层22与所述阻挡层12和所述吸光层132相对应设置，所述遮光层22用于遮挡所述LED芯片11的无效光线(即对显示面板100的显示没有贡献的光线)，避免所述显示面板100漏光。所述量子点彩膜21与所述LED芯片11相对应设置，所述量子点彩膜21包括红色量子点彩膜211和绿色量子点彩膜212。所述红色量子点彩膜211和所述绿色量子点彩膜212分别由红色量子点材料和绿色量子点材料制成，绿色量子点的粒径较小，红色量子点的粒径较大，红色量子点受光激发发射红光，绿色量子点受光激发发射绿光。量子点材料具有高发光效率、高色纯度、广色域等优点，故使用量子点材料作彩膜，能够为显示面板100提供更加逼真的色彩显示。\n\n[0036]所述LED芯片11可为蓝光LED芯片，用于发射蓝光。所述LED芯片11发出的蓝光经过所述红色量子点彩膜211后被转换成红光，所述LED芯片11发出的蓝光经过所述绿色量子点彩膜212后被转换成绿光。\n\n[0037]所述显示面板100包括多个像素单元，每个像素单元包括至少三个LED芯片11，如图1示意性示出了显示面板100的一个像素单元包括三个LED芯片11，其中一个LED芯片11对应红色量子点彩膜211，一个LED芯片11对应绿色量子点彩膜212，而另外一个LED芯片11所对应的量子点彩膜基板2的区域为透明区域，该透明区域不设置量子点彩膜21，可在该透明区域设置透明材料，使LED芯片11发出的蓝光直接透过。如此，像素单元内的LED芯片11发出的蓝光经过所述量子点彩膜基板2后，可以发出红绿蓝三基色的光，以实现全彩显示。\n\n[0038]可以理解的是，发蓝光的LED芯片11更易制作，且蓝光的能量高，更容易激发红色量子点材料以及绿色量子点材料分别发出红光和绿光，更易实现全彩显示。当然地，本发明不限于此，本发明的所述LED芯片11也可以为发射红光或绿光的LED芯片，相对应的，所述量子点彩膜21可以设置为蓝色量子点彩膜和绿色量子点彩膜或红色量子点彩膜和蓝色量子点彩膜。\n\n[0039]在本实施例的显示面板100中，在LED芯片11之间的间隔内设置阻挡层12，以阻挡LED芯片11之间的侧面光串扰，并在阻挡层12以及LED芯片11上设置层叠交替设置的封装胶层131和吸光层132作为控光构件13，以收敛LED芯片11的出光角度，避免了某个像素的miniLED的出射光照到相邻像素，解决了现有QD-miniLED器件存在光串扰的问题。同时本发明实施例的显示面板100集合了miniLED与量子点的优势，可使得显示面板100具有低功耗、高性能、长寿命等优点。\n\n[0040]在一种实施例中，请参照图2，图2为本发明实施例提供的显示面板的第二种剖面结构示意图。与上述实施例不同的是，所述显示面板101的控光构件13包括层叠交替设置的三层封装胶层131和三层吸光层132。三层吸光层132的结构相同，且所述吸光层132的第一开孔1321被所述封装胶层131填充，可以理解的是，由于所述控光构件13的顶层膜层为吸光层132，顶层的吸光层132上面为透明光学胶3，故顶层的吸光层132的第一开孔1321被所述透明光学胶3填充。其中所述吸光层132的厚度为1微米，所述封装胶层131的厚度为8微米。当然地，本发明实施例的控光构件13不限于示意性列举的由三层封装胶层131和三层吸光层132层叠交替设置形成，所述控光构件13也可以由更多层的封装胶层131和吸光层132层叠交替设置形成，具体的层数可根据所述LED芯片11需要收敛的出光角度来确定。而且所述吸光层132的厚度和所述封装胶层131的厚度也不限于本实施例列举的，所述吸光层132的厚度和所述封装胶层131的厚度也可根据所述LED芯片11需要收敛的出光角度来确定。其他说明请参照上述实施例，在此不再赘述。\n\n[0041]在一种实施例中，请参照图3，图3为本发明实施例提供的显示面板的第三种剖面结构示意图。与上述实施例不同的是，所述显示面板102的所述吸光层132在对应所述阻挡层12的位置设置有第二开孔1322，所述第二开孔1322的宽度小于所述阻挡层12的宽度。也即在相邻的两个第一开孔1321之间的吸光层132上还设置有第二开孔1322，第二开孔1322对应所述阻挡层12设置。通过设置第二开孔1322，使所述控光构件13在满足收敛LED芯片11的出光角度的前提下，还可以减少吸光层132使用的材料，以节约成本。其他说明请参照上述实施例，在此不再赘述。\n\n[0042]在一种实施例中，请参照图4至图11，图4为本发明实施例提供的显示面板制备方法的流程示意图，图5至图11为本发明实施例提供的显示面板制备方法中各步骤制得的显示面板的剖面结构示意图。所述显示面板制备方法包括以下步骤：\n\n[0043]步骤S301，提供转移基板40，在所述转移基板40上制备多个LED芯片11。\n\n[0044]具体地，可采用金属有机化合物化学气相沉积(Metal-organic ChemicalVaporDeposition，MOVCD)、分子束外延(Molecular Beam Epitaxy，MBE)或者氢化物气相外延(Hydride Vapor Phase Epitaxy，HVPE)等方式在转移基板40上制备多个LED芯片11，多个LED芯片11阵列排布，如图5所示。其中所述LED芯片11可以为发射蓝光的LED芯片11，所述转移基板40包括蓝宝石衬底等。\n\n[0045]步骤S302，提供驱动背板10，把所述转移基板40上的多个所述LED芯片11对应转移到所述驱动背板10上，并与所述驱动背板10绑定。\n\n[0046]具体地，参照图6，提供驱动背板10，采用传统的打件工艺或各项异性导电胶(ACF)工艺把所述转移基板40上的多个所述LED芯片11对应转移到所述驱动背板10上，并加热完成固晶，使所述LED芯片11紧密连接在所述驱动背板10上。所述驱动背板10上设置有像素驱动电路(图未示)，每个LED芯片11均可对应电连接一个像素驱动电路，从而使得每个LED芯片11均可独立发光，以实现所述LED芯片11与所述驱动背板10的绑定。在完成所述LED芯片11与所述驱动背板10的绑定后，剥离掉所述转移基板40，形成如图7所示的结构，所述LED芯片11在所述驱动背板10仍阵列排布，所述LED芯片11之间具有间隔。\n\n[0047]步骤S303，在所述LED芯片11之间的间隔内制备阻挡层12。\n\n[0048]具体地，参照图8，采用喷墨打印工艺在所述驱动背板10上的所述LED芯片11之间的间隔中打印阻挡层12。所述阻挡层12的材料包括黑色胶材、灰色胶材和黑色油墨等遮光材料中的至少一种。采用喷墨打印工艺把遮光材料打印在所述LED芯片11之间的间隔内，但因工艺限制，所述阻挡层12的宽度L3会小于所述LED芯片11之间的间隔距离L4。所述阻挡层12的厚度可以等于或稍微大于所述LED芯片11的厚度。当所述阻挡层12的厚度稍微大于所述LED芯片11的厚度时，可以更好的阻挡所述LED芯片11的侧面出射光，避免LED芯片11的侧面光串扰，提高显示面板的显示效果。\n\n[0049]步骤S304，在所述LED芯片11及所述阻挡层12上制备控光构件13，以形成背光基板1。\n\n[0050]具体地，参照图9，在所述LED芯片11及所述阻挡层上制备第一层封装胶层131，所述第一层封装胶层131的厚度为8微米，所述第一层封装胶层131的材料为OC胶。所述第一层封装胶层131能够平衡段差提供平坦的表面，同时还可保护所述驱动背板10上的LED芯片11，以阻隔水氧等。可以理解的是，由于所述阻挡层12的宽度L3小于所述LED芯片11之间的间隔距离L4，故所述第一层封装胶层131还填充在所述阻挡层12与所述LED芯片11之间的间隙内。\n\n[0051]参照图10，在所述第一层封装胶层131上制备第一层吸光层132，所述第一层吸光层132的厚度为1微米，所述第一层吸光层132的材料为黑色矩阵等具有吸光性能的材料。所述第一层吸光层132在对应所述LED芯片11的出光方向上形成有第一开孔1321，所述第一开孔1321的宽度L1等于所述LED芯片11的宽度L2，也即所述第一层吸光层132对应所述LED芯片11之间的间隔设置，相邻两个所述第一开孔1321之间的所述第一层吸光层132的宽度等于所述LED芯片11之间的间隔距离。所述第一层吸光层132能够吸收所述LED芯片11的正面出射光中的杂散光线，以收敛所述LED芯片11的出光角度。\n\n[0052]参照图11，采用与制备所述第一层封装胶层131同样的工艺和材料制备第二层封装胶层131和第三层封装胶层131，三层封装胶层131的厚度相同，均为8微米；采用与制备所述第一层吸光层132同样的工艺和材料制备第二层吸光层132和第三层吸光层132，三层吸光层132的厚度相同，均为1微米。其中所述第二层封装胶层131位于所述第一层吸光层132上，所述第二层吸光层132位于所述第二层封装胶层131上，所述第三层封装胶层131位于所述第二层吸光层132上，所述第三层吸光层132位于所述第三层封装胶层131上，三层封装胶层131和三层吸光层132层叠交替设置，组成控光构件13，至此形成背光基板1。所述控光构件13能够收敛LED芯片11的出光角度，避免某个像素的miniLED的出射光照到相邻像素产生光串扰。\n\n[0053]步骤S305，提供量子点彩膜基板2，将所述量子点彩膜基板2和所述背光基板1对位贴合，以形成显示面板101，如图2所示。\n\n[0054]具体地，参照图2，通过透明光学胶3把所述量子点彩膜基板2和所述背光基板1对位贴合，形成所述显示面板101。所述量子点彩膜基板2包括衬底基板20、设置在所述衬底基板20上的量子点彩膜21以及设置在所述量子点彩膜21之间的遮光层22。所述衬底基板20包括玻璃基板等透明的衬底材料。所述遮光层22的材料包括黑色矩阵，所述遮光层22与所述LED芯片11之间的间隔相对应设置。所述量子点彩膜21与所述LED芯片11相对应设置，所述量子点彩膜21包括红色量子点彩膜211和绿色量子点彩膜212。所述LED芯片11可为蓝光LED芯片11，用于发射蓝光。所述LED芯片11发出的蓝光经过所述红色量子点彩膜211后被转换成红光，所述LED芯片11发出的蓝光经过所述绿色量子点彩膜212后被转换成绿光。\n\n[0055]所述显示面板101包括多个像素单元，每个像素单元包括至少三个LED芯片11，如图2示意性示出了显示面板101的一个像素单元包括三个LED芯片11，其中一个LED芯片11对应红色量子点彩膜211，一个LED芯片11对应绿色量子点彩膜212，而另外一个LED芯片11所对应的量子点彩膜基板2的区域为透明区域，该透明区域不设置量子点彩膜21，可在该透明区域设置透明材料，使LED芯片11发出的蓝光直接透过。如此，该像素单元内的LED芯片11发出的蓝光经过所述量子点彩膜基板2后，可以发出红绿蓝三基色的光，以实现全彩显示。\n\n[0056]需要说明的是，本实施例的显示面板制备方法仅以制备上述实施例其中之一的显示面板101为例说明，但不限于此，本发明的显示面板制备方法可以制备上述实施例中任一所述显示面板。\n\n[0057]本发明实施例还提供一种显示装置，其包括前述实施例其中之一的显示面板、绑定于所述显示面板的电路板等器件以及覆盖在所述显示面板上的盖板等。\n\n[0058]根据上述实施例可知：\n\n[0059]本发明提供一种显示面板和显示装置，显示面板包括背光基板以及与所述背光基板相对设置的量子点彩膜基板，其中所述背光基板包括驱动背板、多个LED芯片、阻挡层以及控光构件，多个所述LED芯片绑定于所述驱动背板上，且相邻所述LED芯片之间具有间隔，所述阻挡层设置于所述间隔内，用于阻挡所述LED芯片的侧面出射光，所述控光构件设置于所述阻挡层以及所述LED芯片上，以收敛LED芯片的出光角度，避免了某个像素的miniLED的出射光照到相邻像素，解决了现有QD-miniLED器件存在光串扰的问题。\n\n[0060]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10916, 23970, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种背光驱动电路及液晶显示装置。\n\n背景技术\n\n[0002]液晶显示器(Liquid Crystal Display,LCD)是通过电压控制液晶的翻转角度来控制屏幕显示不同画面的，然而在越来越高刷新率的应用下，在液晶翻转的过程中，若液晶翻转还未到达稳态时背光常亮，人眼就会看到拖尾的问题。\n\n[0003]在对现有技术的研究和实践过程中，本申请的发明人发现，被动矩阵式迷你发光二极管(Passive Matrix Mini light-emitting diode,PMMini-led)产品，以单点静态控制的方式驱动，通过让背光跟随液晶面板(opencell,OC)逐行点亮的方式，可以实现让液晶转到稳态后再开启背光。液晶扫描翻转的过程因为背光未被点亮，故人眼无法察觉得到，达到了改善拖尾的目的。\n\n[0004]而主动矩阵式迷你发光二极管(Active Matrix Mini light-emitting diode,AMMini-led)产品的背光与OC相同，都是扫描式驱动的。每行背光扫描时，给电容充电，充电完毕后，薄膜晶体管(Thin Film Transistor,TFT)会关断，此时电容保持电位，让驱动晶体管持续导通，LED一直点亮。每行背光打开后直到下一帧扫完后再打开TFT改变电容电荷。故无法实现在点亮某行的同时，让上一行的LED熄灭，即无法让背光跟随OC逐行开启，因此，主动矩阵式产品的拖尾问题难以改善。\n\n发明内容\n\n[0005]本申请提供一种背光驱动电路及液晶显示装置，可以实现背光逐行开启，进而改善液晶显示装置显示时的拖尾问题。\n\n[0006]本申请提供一种背光驱动电路，包括驱动晶体管、第一晶体管、第二晶体管、存储电容以及发光器件；\n\n[0007]所述驱动晶体管的漏极与所述发光器件电性连接，所述驱动晶体管的源极电性连接于第一节点，所述驱动晶体管的栅极电性连接于第二节点；\n\n[0008]所述第一晶体管的漏极接地，所述第一晶体管的源极电性连接于所述第二节点，所述第一晶体管的栅极接入重置信号；\n\n[0009]所述第二晶体管的源极接入数据信号，所述第二晶体管的漏极电性连接于所述第二节点，所述第二晶体管的栅极接入扫描信号；\n\n[0010]所述存储电容的第一端电性连接于所述第一节点，所述存储电容的第二端电性连接于所述第二节点；\n\n[0011]所述发光器件的阳极接入电源信号，所述发光器件的阴极与所述驱动晶体管的漏极电性连接。\n\n[0012]可选的，在本申请的一些实施例中，所述背光驱动电路的驱动时序包括：\n\n[0013]扫描阶段，将所述数据信号输出至所述第二节点，所述驱动晶体管驱动所述发光器件发光；\n\n[0014]重置阶段，释放所述存储电容的电荷，对所述发光器件进行重置。\n\n[0015]可选的，在本申请的一些实施例中，在所述扫描阶段，所述扫描信号为高电平，所述重置信号为低电平。\n\n[0016]可选的，在本申请的一些实施例中，在所述重置阶段，所述扫描信号为低电平，所述重置信号为高电平。\n\n[0017]可选的，在本申请的一些实施例中，所述第一晶体管、所述第二晶体管以及所述驱动晶体管均为低温多晶硅薄膜晶体管、氧化物半导体薄膜晶体管或非晶硅薄膜晶体管。\n\n[0018]可选的，在本申请的一些实施例中，所述发光器件为发光二极管、迷你发光二极管或微型发光二极管中的一种或多种。\n\n[0019]相应的，本申请还提供一种液晶显示装置，包括背光模组、阵列基板、彩膜基板以及设置于所述阵列基板和所述彩膜基板之间的液晶层，所述背光模组设置在所述阵列基板远离所述液晶层的一侧，所述背光模组上设置有多行背光单元，所述背光单元包括以上所述的背光驱动电路。\n\n[0020]可选的，在本申请的一些实施例中，所述背光驱动电路的驱动时序包括扫描阶段和重置阶段，在所述扫描阶段，所述液晶层中的第n行液晶发生偏转，所述第n行液晶偏转稳定后，所述背光驱动电路驱动所述背光模组中对应行的所述背光单元发光，在所述重置阶段，释放所述背光驱动电路存储的电荷，关闭所述第n行液晶对应的背光单元，其中，n为1以上的正整数。\n\n[0021]可选的，在本申请的一些实施例中，其中，在所述第n+1行液晶对应的所述背光驱动电路处于所述扫描阶段时，所述第n行液晶对应的的所述背光驱动电路处于所述重置阶段。\n\n[0022]可选的，在本申请的一些实施例中，每行所述液晶对应80行至120行所述背光单元。\n\n[0023]本申请采用的背光驱动电路增加了一个第一晶体管和一个重置信号。通过扫描信号控制第二晶体管的通断，对存储电容充电，并通过重置信号控制第一晶体管的通断，对存储电容中的电荷进行释放。采用本申请的背光驱动电路的液晶显示装置能够实现背光逐行单独点亮，改善液晶显示装置的显示拖尾的问题。\n\n附图说明\n\n[0024]为了更清楚地说明本申请中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0025]图1是本申请提供的背光驱动电路的一种电路示意图；\n\n[0026]图2是本申请提供的背光驱动电路的时序图；\n\n[0027]图3是本申请提供的背光驱动电路在图2所示的驱动时序下的扫描阶段的通路示意图；\n\n[0028]图4是本申请提供的背光驱动电路在图2所示的驱动时序下的重置阶段的通路示意图；\n\n[0029]图5是本申请提供的液晶显示装置的一种结构示意图；\n\n[0030]图6是本申请提供的背光模组的一种驱动电路时序图。\n\n具体实施方式\n\n[0031]下面将结合本申请中的附图，对本申请中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0032]需要说明的是，由于本申请采用的晶体管的源极、漏极是对称的，所以其源极、漏极是可以互换的。在本申请中，为区分晶体管除栅极之外的两极，将其中一极称为源极，另一极称为漏极。此外本申请所采用的晶体管可以包括P型晶体管和/或N型晶体管两种，其中，P型晶体管在栅极为低电平时导通，在栅极为高电平时截止，N型晶体管为在栅极为高电平时导通，在栅极为低电平时截止。\n\n[0033]本申请提供一种背光驱动电路及液晶显示装置。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0034]请参阅图1，图1是本申请提供的背光驱动电路的一种电路示意图。本申请提供一种背光驱动电路100，包括驱动晶体管DT、第一晶体管T1、第二晶体管T2、存储电容C以及发光器件D。发光器件D可以是发光二极管(light-emitting diode,LED)、迷你发光二极管(Mini light-emitting diode,Mini LED)或微型发光二极管(Micro light-emittingdiode,Micro LED)。\n\n[0035]驱动晶体管DT的漏极与发光器件D电性连接。驱动晶体管DT的源极电性连接于第一节点a。驱动晶体管DT的栅极电性连接于第二节点b。第一晶体管T1的漏极接地。第一晶体管T1的源极电性连接于第二节点b。第一晶体管T1的栅极接入重置信号Re。第二晶体管T2的源极接入数据信号Da。第二晶体管T2的漏极电性连接于第二节点b。第二晶体管T2的栅极接入扫描信号G。存储电容C的第一端电性连接于第一节点a。存储电容C的第二端电性连接于第二节点b。发光器件D的阳极接入电源信号VDD。发光器件D的阴极与驱动晶体管DT的漏极电性连接。\n\n[0036]具体的，驱动晶体管DT用于控制流经发光器件D的电流。第一晶体管T1用于在重置信号Re的控制下，释放存储电容C的电荷。第二晶体管T2用于在扫描信号G的控制下，将数据信号Da输出至第二节点b。\n\n[0037]本申请提供的背光驱动电路100增加了一个第一晶体管T1和一个重置信号Re。通过扫描信号G控制第二晶体管T2的通断，对存储电容C充电，并通过重置信号Re控制第一晶体管T1的通断，对存储电容C中的电荷进行释放。采用本申请的背光驱动电路100能够实现背光逐行单独点亮，改善显示拖尾的问题。\n\n[0038]在一些实施例中，驱动晶体管DT、第一晶体管T1以及第二晶体管T2均为低温多晶硅薄膜晶体管、氧化物半导体薄膜晶体管或非晶硅薄膜晶体管。本申请提供的背光驱动电路100中的晶体管均为同一种类型的晶体管，从而避免不同类型的晶体管之间的差异性对背光驱动电路100造成的影响。\n\n[0039]本申请在2T1C(2个晶体管以及1个存储电容)结构的背光驱动电路100基础上增加了一个第一晶体管T1，第一晶体管T1在重置信号Re的控制下可释放存储电容C中的电荷。本申请采用3T1C结构的背光驱动电路100对发光器件D的发光进行驱动，用了较少的元器件，结构简单稳定，节约了成本。并且，本申请只需要增加一个晶体管便可控制存储电容的电荷，实现逐行点亮，优化了电路设计，简化了电路结构。\n\n[0040]请参阅图2，图2为本申请提供的背光驱动电路的时序图。背光驱动电路100的驱动时序包括扫描阶段t1和重置阶段t2。扫描信号G和重置信号Re相组合先后对应背光驱动电路100的不同阶段。\n\n[0041]具体的，在扫描阶段t1，数据信号Da输出至第二节点b，驱动晶体管DT打开，发光回路导通，发光器件D发光。在重置阶段t2，释放存储电容C的电荷，对发光器件D进行重置。\n\n[0042]在一些实施例中，在扫描阶段t1，扫描信号G为高电平，重置信号Re为低电平。具体的，请同时参阅图2和图3，图3是本申请提供的背光驱动电路在图2所示的驱动时序下的扫描阶段的通路示意图。其中，在扫描阶段t1，扫描信号G为高电平，此时第二晶体管T2打开，数据信号Da写入至第二节点b，并向存储电容C充电。此时，重置信号Re为低电平，第一晶体管T1关闭，存储电容C中的电荷不会流出。由于第二节点b的电位被拉高，驱动晶体管DT的栅源电压Vgs大于阈值电压Vth，驱动晶体管DT打开，电源信号VDD向发光器件D供电，则电流通过发光器件D的阳极传输至发光器件D的阴极，发光器件D发光。\n\n[0043]其中，驱动晶体管DT的栅源电压Vgs是指第二节点b与第一节点a之间的电位差，也就是驱动晶体管DT的栅极与驱动晶体管DT的源极之间的电压差。\n\n[0044]在一些实施例中，在重置阶段t2，扫描信号G为低电平，重置信号Re为高电平。具体的，请同时参阅图2和图4，图4是本申请提供的背光驱动电路在图2所示的驱动时序下的重置阶段的通路示意图。其中，在重置阶段t2，扫描信号G为低电平，第二晶体管T2关闭，停止将数据信号Da输送至第二节点b。此时，重置信号Re为高电平，第一晶体管T1打开，存储电容C的第一端和第二端均接地，使得存储电容C对地放电，存储电容C中的电荷清零。第二节点b的电位下降，驱动晶体管DT的栅源电压Vgs小于阈值电压Vth。因此，驱动晶体管DT关闭，发光器件D的电流回路截止，发光器件D停止发光。\n\n[0045]本申请提供一种液晶显示装置，请参阅图5，图5是本申请提供的液晶显示装置的一种结构示意图。该液晶显示装置1000包括背光模组10、阵列基板20、彩膜基板40以及设置于阵列基板20和彩膜基板40之间的液晶层30。背光模组10设置在阵列基板20远离液晶层30的一侧，液晶层30包括多行液晶30a。背光模组10上设置有多行背光单元，背光单元包括上述各实施例所述的背光驱动电路，图5中未示出背光驱动电路。其中，液晶显示装置1000还可以包括像素电极、公共电极或其他装置，液晶显示装置1000的具体设置方式及装配是本领域技术人员所熟知的技术手段，在此不再赘述。\n\n[0046]其中，液晶层30中的每行液晶30a对应80行至120行的背光单元。即液晶层30中的每行液晶30a对应80行至120行的背光驱动电路。具体的，液晶层30中的每行液晶30a对应80行、90行、100行、110行或120行背光驱动电路。本申请中的液晶层30中的每行液晶30a对应80行至120行背光驱动电路，可以使本申请的液晶显示装置1000适应不同像素分辨率的需求，使液晶显示装置1000具有更大的应用市场。\n\n[0047]本申请提供的液晶显示装置1000采用一种背光驱动电路，该背光驱动电路增加了一个第一晶体管和一个重置信号。通过扫描信号控制第二晶体管T2的通断，对存储电容充电，并通过重置信号控制第一晶体管的通断，对存储电容中的电荷进行释放。本申请提供的液晶显示装置1000采用该背光驱动电路，能够使背光跟随液晶30a逐行偏转而逐行点亮，改善显示拖尾的问题。\n\n[0048]请参阅图6，图6是本申请提供的背光模组的一种驱动电路时序图。下面结合图5和图6进行说明。背光驱动电路的驱动时序包括扫描阶段t1和重置阶段t2。在扫描阶段t1，液晶层30中的第n行液晶30a发生偏转，第n行液晶30a偏转稳定后，背光驱动电路驱动背光模组中对应的背光单元发光。在重置阶段t2，释放背光驱动电路存储的电荷，关闭第n行液晶对应的背光单元。其中，n为1以上的正整数。其中，在第n+1行液晶30a对应的背光驱动电路处于扫描阶段t1时，第n行液晶30a对应的背光驱动电路处于重置阶段t2。\n\n[0049]需要说明的是，图6所指示的扫描阶段t1和重置阶段t2是对应第一行扫描信号G1和第一行重置信号R1，并且对应示出了其他行扫描信号和重置信号在该阶段的电位情况。\n\n[0050]本申请以第一行和第二行液晶30a对应的背光单元为例进行说明，首先在扫描阶段t1，对第一行液晶30a对应的背光单元进行扫描充电。当液晶层30的第一行液晶30a翻转完成，处于稳定状态时，第一行液晶30a对应的背光单元充电完成，第一行液晶30a对应的背光单元发光。此时第一行画面进行显示。然后第一行液晶30a对应的背光单元进入重置阶段t2，存储电容C中的电荷被清除，第一行液晶30a对应的背光单元停止发光，第一行画面停止显示。与此同时，对第二行液晶30a对应的背光单元进行扫描充电。当液晶层30的第二行液晶30a翻转完成，处于稳定状态时，第二行液晶30a对应的背光单元充电完成，第二行液晶30a对应的背光单元发光。此时第二行画面进行显示。\n\n[0051]由此，在实现第n行背光单元点亮时，其他行背光单元均为熄灭状态，也就是逐行显示。逐行显示可保证液晶显示装置1000在液晶30a翻转过程中不进行显示，从而有效改善显示画面拖尾的问题。\n\n[0052]需要说明的是，液晶显示装置1000包括多行背光单元，G1、G2、G3……Gn表示每行背光单元对应的扫描信号G，R1、R2、R3……Rn表示每行背光单元对应的重置信号Re。\n\n[0053]具体的，请同时参阅图1、图2、图5以及图6。在扫描阶段t1时，扫描信号G为高电平，重置信号Re为低电平。在扫描阶段t1，在像素电极和公共电极的驱动下，液晶层30中的第一行液晶30a发生偏转，当像素电极和公共电极之间的电压到达预设值，第一行液晶30a偏转稳定。同时，第一行扫描信号G1为高电平，此时对应行背光单元的背光驱动电路100中第二晶体管T2打开，数据信号Da写入至第二节点b，并向背光驱动电路100中的存储电容C充电。此时，第二节点b的电位不断抬升，当驱动晶体管DT的栅源电压Vgs大于阈值电压Vth时，驱动晶体管DT打开，电源信号VDD向对应行背光单元中的发光器件D供电，发光器件D发光。另外，此时对应行背光单元的重置信号Re为低电平，第一晶体管T1关闭，存储电容C中的电荷不会流出。此时，对应行背光单元打开，液晶显示装置1000的第一行画面进行显示。\n\n[0054]其中，驱动晶体管DT的栅源电压Vgs是指第二节点b与第一节点a之间的电位差，也就是驱动晶体管DT的栅极与驱动晶体管DT的源极之间的电压差。\n\n[0055]需要说明的是，液晶层30中的其他行液晶30a对应的背光单元在扫描阶段t1依次进入上述过程，在此不再赘述。\n\n[0056]在一些实施例中，在重置阶段t2，扫描信号G为低电平，重置信号Re为高电平。结合图1、图2、图5以及图6所示，在重置阶段t2，第一行液晶30a对应的背光单元的扫描信号G1为低电平，第一行液晶30a对应的背光单元的背光驱动电路100中第二晶体管T2关闭，并停止将数据信号Da输送至第二节点b。并且，第一行液晶30a对应的背光单元的重置信号R1为高电平，第一行液晶30a对应的背光单元的背光驱动电路100中第一晶体管T1打开，第一行液晶30a对应的背光单元的背光驱动电路100中存储电容C的第一端和第二端均接地，使得存储电容C对地放电，存储电容C中的电荷清零。第二节点b的电位下降，第一行液晶30a对应的背光单元的背光驱动电路100中驱动晶体管DT的栅源电压Vgs小于阈值电压Vth。因此，驱动晶体管DT关闭，第一行液晶30a对应的背光单元的背光驱动电路100中发光器件D的电流回路截止，发光器件D停止发光。此时，第一行液晶30a对应的背光单元关闭，液晶显示装置1000的第一行画面停止显示。\n\n[0057]需要说明的是，液晶层30中的其他行液晶30a对应的背光单元在重置阶段t2依次进入上述过程，在此不再赘述。\n\n[0058]第一行液晶30a对应的背光单元处于重置阶段t2的同时，第二行液晶30a对应的背光单元进入扫描阶段。如此循环往复，一方面，可以实现在液晶偏转到稳态后再开启背光；另一方面，能够使背光单元跟随液晶30a逐行偏转而逐行打开，从而改善液晶显示装置1000在显示画面时的拖尾问题，提升产品品位，改善显示效果。\n\n[0059]并且，在相关技术中，主动矩阵式液晶显示装置若需要进行逐行点亮，通常是整屏扫描之后，再进行逐行显示。而本申请提供的液晶显示装置1000，实现了逐行扫描和逐行点亮，能够减小功耗，减低充电时间，扩大产品应用场景。\n\n[0060]本申请的液晶显示装置1000可应用于主动矩阵式发光二极管背光液晶显示器、主动矩阵式迷你发光二极管背光液晶显示器或主动矩阵式微型发光二极管背光液晶显示器。该液晶显示装置1000可以为手机、平板电脑、笔记本、游戏机、数码相机、车载导航仪、电子广告牌、自动取款机等具有显示功能的电子设备。\n\n[0061]以上对本申请所提供的一种背光驱动电路及液晶显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种背光驱动电路及液晶显示装置。\n\n背景技术\n\n[0002]液晶显示器(Liquid Crystal Display,LCD)是通过电压控制液晶的翻转角度来控制屏幕显示不同画面的，然而在越来越高刷新率的应用下，在液晶翻转的过程中，若液晶翻转还未到达稳态时背光常亮，人眼就会看到拖尾的问题。\n\n[0003]在对现有技术的研究和实践过程中，本申请的发明人发现，被动矩阵式迷你发光二极管(Passive Matrix Mini light-emitting diode,PMMini-led)产品，以单点静态控制的方式驱动，通过让背光跟随液晶面板(opencell,OC)逐行点亮的方式，可以实现让液晶转到稳态后再开启背光。液晶扫描翻转的过程因为背光未被点亮，故人眼无法察觉得到，达到了改善拖尾的目的。\n\n[0004]而主动矩阵式迷你发光二极管(Active Matrix Mini light-emitting diode,AMMini-led)产品的背光与OC相同，都是扫描式驱动的。每行背光扫描时，给电容充电，充电完毕后，薄膜晶体管(Thin Film Transistor,TFT)会关断，此时电容保持电位，让驱动晶体管持续导通，LED一直点亮。每行背光打开后直到下一帧扫完后再打开TFT改变电容电荷。故无法实现在点亮某行的同时，让上一行的LED熄灭，即无法让背光跟随OC逐行开启，因此，主动矩阵式产品的拖尾问题难以改善。\n\n发明内容\n\n[0005]本申请提供一种背光驱动电路及液晶显示装置，可以实现背光逐行开启，进而改善液晶显示装置显示时的拖尾问题。\n\n[0006]本申请提供一种背光驱动电路，包括驱动晶体管、第一晶体管、第二晶体管、存储电容以及发光器件；\n\n[0007]所述驱动晶体管的漏极与所述发光器件电性连接，所述驱动晶体管的源极电性连接于第一节点，所述驱动晶体管的栅极电性连接于第二节点；\n\n[0008]所述第一晶体管的漏极接地，所述第一晶体管的源极电性连接于所述第二节点，所述第一晶体管的栅极接入重置信号；\n\n[0009]所述第二晶体管的源极接入数据信号，所述第二晶体管的漏极电性连接于所述第二节点，所述第二晶体管的栅极接入扫描信号；\n\n[0010]所述存储电容的第一端电性连接于所述第一节点，所述存储电容的第二端电性连接于所述第二节点；\n\n[0011]所述发光器件的阳极接入电源信号，所述发光器件的阴极与所述驱动晶体管的漏极电性连接。\n\n[0012]可选的，在本申请的一些实施例中，所述背光驱动电路的驱动时序包括：\n\n[0013]扫描阶段，将所述数据信号输出至所述第二节点，所述驱动晶体管驱动所述发光器件发光；\n\n[0014]重置阶段，释放所述存储电容的电荷，对所述发光器件进行重置。\n\n[0015]可选的，在本申请的一些实施例中，在所述扫描阶段，所述扫描信号为高电平，所述重置信号为低电平。\n\n[0016]可选的，在本申请的一些实施例中，在所述重置阶段，所述扫描信号为低电平，所述重置信号为高电平。\n\n[0017]可选的，在本申请的一些实施例中，所述第一晶体管、所述第二晶体管以及所述驱动晶体管均为低温多晶硅薄膜晶体管、氧化物半导体薄膜晶体管或非晶硅薄膜晶体管。\n\n[0018]可选的，在本申请的一些实施例中，所述发光器件为发光二极管、迷你发光二极管或微型发光二极管中的一种或多种。\n\n[0019]相应的，本申请还提供一种液晶显示装置，包括背光模组、阵列基板、彩膜基板以及设置于所述阵列基板和所述彩膜基板之间的液晶层，所述背光模组设置在所述阵列基板远离所述液晶层的一侧，所述背光模组上设置有多行背光单元，所述背光单元包括以上所述的背光驱动电路。\n\n[0020]可选的，在本申请的一些实施例中，所述背光驱动电路的驱动时序包括扫描阶段和重置阶段，在所述扫描阶段，所述液晶层中的第n行液晶发生偏转，所述第n行液晶偏转稳定后，所述背光驱动电路驱动所述背光模组中对应行的所述背光单元发光，在所述重置阶段，释放所述背光驱动电路存储的电荷，关闭所述第n行液晶对应的背光单元，其中，n为1以上的正整数。\n\n[0021]可选的，在本申请的一些实施例中，其中，在所述第n+1行液晶对应的所述背光驱动电路处于所述扫描阶段时，所述第n行液晶对应的的所述背光驱动电路处于所述重置阶段。\n\n[0022]可选的，在本申请的一些实施例中，每行所述液晶对应80行至120行所述背光单元。\n\n[0023]本申请采用的背光驱动电路增加了一个第一晶体管和一个重置信号。通过扫描信号控制第二晶体管的通断，对存储电容充电，并通过重置信号控制第一晶体管的通断，对存储电容中的电荷进行释放。采用本申请的背光驱动电路的液晶显示装置能够实现背光逐行单独点亮，改善液晶显示装置的显示拖尾的问题。\n\n附图说明\n\n[0024]为了更清楚地说明本申请中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0025]图1是本申请提供的背光驱动电路的一种电路示意图；\n\n[0026]图2是本申请提供的背光驱动电路的时序图；\n\n[0027]图3是本申请提供的背光驱动电路在图2所示的驱动时序下的扫描阶段的通路示意图；\n\n[0028]图4是本申请提供的背光驱动电路在图2所示的驱动时序下的重置阶段的通路示意图；\n\n[0029]图5是本申请提供的液晶显示装置的一种结构示意图；\n\n[0030]图6是本申请提供的背光模组的一种驱动电路时序图。\n\n具体实施方式\n\n[0031]下面将结合本申请中的附图，对本申请中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0032]需要说明的是，由于本申请采用的晶体管的源极、漏极是对称的，所以其源极、漏极是可以互换的。在本申请中，为区分晶体管除栅极之外的两极，将其中一极称为源极，另一极称为漏极。此外本申请所采用的晶体管可以包括P型晶体管和/或N型晶体管两种，其中，P型晶体管在栅极为低电平时导通，在栅极为高电平时截止，N型晶体管为在栅极为高电平时导通，在栅极为低电平时截止。\n\n[0033]本申请提供一种背光驱动电路及液晶显示装置。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0034]请参阅图1，图1是本申请提供的背光驱动电路的一种电路示意图。本申请提供一种背光驱动电路100，包括驱动晶体管DT、第一晶体管T1、第二晶体管T2、存储电容C以及发光器件D。发光器件D可以是发光二极管(light-emitting diode,LED)、迷你发光二极管(Mini light-emitting diode,Mini LED)或微型发光二极管(Micro light-emittingdiode,Micro LED)。\n\n[0035]驱动晶体管DT的漏极与发光器件D电性连接。驱动晶体管DT的源极电性连接于第一节点a。驱动晶体管DT的栅极电性连接于第二节点b。第一晶体管T1的漏极接地。第一晶体管T1的源极电性连接于第二节点b。第一晶体管T1的栅极接入重置信号Re。第二晶体管T2的源极接入数据信号Da。第二晶体管T2的漏极电性连接于第二节点b。第二晶体管T2的栅极接入扫描信号G。存储电容C的第一端电性连接于第一节点a。存储电容C的第二端电性连接于第二节点b。发光器件D的阳极接入电源信号VDD。发光器件D的阴极与驱动晶体管DT的漏极电性连接。\n\n[0036]具体的，驱动晶体管DT用于控制流经发光器件D的电流。第一晶体管T1用于在重置信号Re的控制下，释放存储电容C的电荷。第二晶体管T2用于在扫描信号G的控制下，将数据信号Da输出至第二节点b。\n\n[0037]本申请提供的背光驱动电路100增加了一个第一晶体管T1和一个重置信号Re。通过扫描信号G控制第二晶体管T2的通断，对存储电容C充电，并通过重置信号Re控制第一晶体管T1的通断，对存储电容C中的电荷进行释放。采用本申请的背光驱动电路100能够实现背光逐行单独点亮，改善显示拖尾的问题。\n\n[0038]在一些实施例中，驱动晶体管DT、第一晶体管T1以及第二晶体管T2均为低温多晶硅薄膜晶体管、氧化物半导体薄膜晶体管或非晶硅薄膜晶体管。本申请提供的背光驱动电路100中的晶体管均为同一种类型的晶体管，从而避免不同类型的晶体管之间的差异性对背光驱动电路100造成的影响。\n\n[0039]本申请在2T1C(2个晶体管以及1个存储电容)结构的背光驱动电路100基础上增加了一个第一晶体管T1，第一晶体管T1在重置信号Re的控制下可释放存储电容C中的电荷。本申请采用3T1C结构的背光驱动电路100对发光器件D的发光进行驱动，用了较少的元器件，结构简单稳定，节约了成本。并且，本申请只需要增加一个晶体管便可控制存储电容的电荷，实现逐行点亮，优化了电路设计，简化了电路结构。\n\n[0040]请参阅图2，图2为本申请提供的背光驱动电路的时序图。背光驱动电路100的驱动时序包括扫描阶段t1和重置阶段t2。扫描信号G和重置信号Re相组合先后对应背光驱动电路100的不同阶段。\n\n[0041]具体的，在扫描阶段t1，数据信号Da输出至第二节点b，驱动晶体管DT打开，发光回路导通，发光器件D发光。在重置阶段t2，释放存储电容C的电荷，对发光器件D进行重置。\n\n[0042]在一些实施例中，在扫描阶段t1，扫描信号G为高电平，重置信号Re为低电平。具体的，请同时参阅图2和图3，图3是本申请提供的背光驱动电路在图2所示的驱动时序下的扫描阶段的通路示意图。其中，在扫描阶段t1，扫描信号G为高电平，此时第二晶体管T2打开，数据信号Da写入至第二节点b，并向存储电容C充电。此时，重置信号Re为低电平，第一晶体管T1关闭，存储电容C中的电荷不会流出。由于第二节点b的电位被拉高，驱动晶体管DT的栅源电压Vgs大于阈值电压Vth，驱动晶体管DT打开，电源信号VDD向发光器件D供电，则电流通过发光器件D的阳极传输至发光器件D的阴极，发光器件D发光。\n\n[0043]其中，驱动晶体管DT的栅源电压Vgs是指第二节点b与第一节点a之间的电位差，也就是驱动晶体管DT的栅极与驱动晶体管DT的源极之间的电压差。\n\n[0044]在一些实施例中，在重置阶段t2，扫描信号G为低电平，重置信号Re为高电平。具体的，请同时参阅图2和图4，图4是本申请提供的背光驱动电路在图2所示的驱动时序下的重置阶段的通路示意图。其中，在重置阶段t2，扫描信号G为低电平，第二晶体管T2关闭，停止将数据信号Da输送至第二节点b。此时，重置信号Re为高电平，第一晶体管T1打开，存储电容C的第一端和第二端均接地，使得存储电容C对地放电，存储电容C中的电荷清零。第二节点b的电位下降，驱动晶体管DT的栅源电压Vgs小于阈值电压Vth。因此，驱动晶体管DT关闭，发光器件D的电流回路截止，发光器件D停止发光。\n\n[0045]本申请提供一种液晶显示装置，请参阅图5，图5是本申请提供的液晶显示装置的一种结构示意图。该液晶显示装置1000包括背光模组10、阵列基板20、彩膜基板40以及设置于阵列基板20和彩膜基板40之间的液晶层30。背光模组10设置在阵列基板20远离液晶层30的一侧，液晶层30包括多行液晶30a。背光模组10上设置有多行背光单元，背光单元包括上述各实施例所述的背光驱动电路，图5中未示出背光驱动电路。其中，液晶显示装置1000还可以包括像素电极、公共电极或其他装置，液晶显示装置1000的具体设置方式及装配是本领域技术人员所熟知的技术手段，在此不再赘述。\n\n[0046]其中，液晶层30中的每行液晶30a对应80行至120行的背光单元。即液晶层30中的每行液晶30a对应80行至120行的背光驱动电路。具体的，液晶层30中的每行液晶30a对应80行、90行、100行、110行或120行背光驱动电路。本申请中的液晶层30中的每行液晶30a对应80行至120行背光驱动电路，可以使本申请的液晶显示装置1000适应不同像素分辨率的需求，使液晶显示装置1000具有更大的应用市场。\n\n[0047]本申请提供的液晶显示装置1000采用一种背光驱动电路，该背光驱动电路增加了一个第一晶体管和一个重置信号。通过扫描信号控制第二晶体管T2的通断，对存储电容充电，并通过重置信号控制第一晶体管的通断，对存储电容中的电荷进行释放。本申请提供的液晶显示装置1000采用该背光驱动电路，能够使背光跟随液晶30a逐行偏转而逐行点亮，改善显示拖尾的问题。\n\n[0048]请参阅图6，图6是本申请提供的背光模组的一种驱动电路时序图。下面结合图5和图6进行说明。背光驱动电路的驱动时序包括扫描阶段t1和重置阶段t2。在扫描阶段t1，液晶层30中的第n行液晶30a发生偏转，第n行液晶30a偏转稳定后，背光驱动电路驱动背光模组中对应的背光单元发光。在重置阶段t2，释放背光驱动电路存储的电荷，关闭第n行液晶对应的背光单元。其中，n为1以上的正整数。其中，在第n+1行液晶30a对应的背光驱动电路处于扫描阶段t1时，第n行液晶30a对应的背光驱动电路处于重置阶段t2。\n\n[0049]需要说明的是，图6所指示的扫描阶段t1和重置阶段t2是对应第一行扫描信号G1和第一行重置信号R1，并且对应示出了其他行扫描信号和重置信号在该阶段的电位情况。\n\n[0050]本申请以第一行和第二行液晶30a对应的背光单元为例进行说明，首先在扫描阶段t1，对第一行液晶30a对应的背光单元进行扫描充电。当液晶层30的第一行液晶30a翻转完成，处于稳定状态时，第一行液晶30a对应的背光单元充电完成，第一行液晶30a对应的背光单元发光。此时第一行画面进行显示。然后第一行液晶30a对应的背光单元进入重置阶段t2，存储电容C中的电荷被清除，第一行液晶30a对应的背光单元停止发光，第一行画面停止显示。与此同时，对第二行液晶30a对应的背光单元进行扫描充电。当液晶层30的第二行液晶30a翻转完成，处于稳定状态时，第二行液晶30a对应的背光单元充电完成，第二行液晶30a对应的背光单元发光。此时第二行画面进行显示。\n\n[0051]由此，在实现第n行背光单元点亮时，其他行背光单元均为熄灭状态，也就是逐行显示。逐行显示可保证液晶显示装置1000在液晶30a翻转过程中不进行显示，从而有效改善显示画面拖尾的问题。\n\n[0052]需要说明的是，液晶显示装置1000包括多行背光单元，G1、G2、G3……Gn表示每行背光单元对应的扫描信号G，R1、R2、R3……Rn表示每行背光单元对应的重置信号Re。\n\n[0053]具体的，请同时参阅图1、图2、图5以及图6。在扫描阶段t1时，扫描信号G为高电平，重置信号Re为低电平。在扫描阶段t1，在像素电极和公共电极的驱动下，液晶层30中的第一行液晶30a发生偏转，当像素电极和公共电极之间的电压到达预设值，第一行液晶30a偏转稳定。同时，第一行扫描信号G1为高电平，此时对应行背光单元的背光驱动电路100中第二晶体管T2打开，数据信号Da写入至第二节点b，并向背光驱动电路100中的存储电容C充电。此时，第二节点b的电位不断抬升，当驱动晶体管DT的栅源电压Vgs大于阈值电压Vth时，驱动晶体管DT打开，电源信号VDD向对应行背光单元中的发光器件D供电，发光器件D发光。另外，此时对应行背光单元的重置信号Re为低电平，第一晶体管T1关闭，存储电容C中的电荷不会流出。此时，对应行背光单元打开，液晶显示装置1000的第一行画面进行显示。\n\n[0054]其中，驱动晶体管DT的栅源电压Vgs是指第二节点b与第一节点a之间的电位差，也就是驱动晶体管DT的栅极与驱动晶体管DT的源极之间的电压差。\n\n[0055]需要说明的是，液晶层30中的其他行液晶30a对应的背光单元在扫描阶段t1依次进入上述过程，在此不再赘述。\n\n[0056]在一些实施例中，在重置阶段t2，扫描信号G为低电平，重置信号Re为高电平。结合图1、图2、图5以及图6所示，在重置阶段t2，第一行液晶30a对应的背光单元的扫描信号G1为低电平，第一行液晶30a对应的背光单元的背光驱动电路100中第二晶体管T2关闭，并停止将数据信号Da输送至第二节点b。并且，第一行液晶30a对应的背光单元的重置信号R1为高电平，第一行液晶30a对应的背光单元的背光驱动电路100中第一晶体管T1打开，第一行液晶30a对应的背光单元的背光驱动电路100中存储电容C的第一端和第二端均接地，使得存储电容C对地放电，存储电容C中的电荷清零。第二节点b的电位下降，第一行液晶30a对应的背光单元的背光驱动电路100中驱动晶体管DT的栅源电压Vgs小于阈值电压Vth。因此，驱动晶体管DT关闭，第一行液晶30a对应的背光单元的背光驱动电路100中发光器件D的电流回路截止，发光器件D停止发光。此时，第一行液晶30a对应的背光单元关闭，液晶显示装置1000的第一行画面停止显示。\n\n[0057]需要说明的是，液晶层30中的其他行液晶30a对应的背光单元在重置阶段t2依次进入上述过程，在此不再赘述。\n\n[0058]第一行液晶30a对应的背光单元处于重置阶段t2的同时，第二行液晶30a对应的背光单元进入扫描阶段。如此循环往复，一方面，可以实现在液晶偏转到稳态后再开启背光；另一方面，能够使背光单元跟随液晶30a逐行偏转而逐行打开，从而改善液晶显示装置1000在显示画面时的拖尾问题，提升产品品位，改善显示效果。\n\n[0059]并且，在相关技术中，主动矩阵式液晶显示装置若需要进行逐行点亮，通常是整屏扫描之后，再进行逐行显示。而本申请提供的液晶显示装置1000，实现了逐行扫描和逐行点亮，能够减小功耗，减低充电时间，扩大产品应用场景。\n\n[0060]本申请的液晶显示装置1000可应用于主动矩阵式发光二极管背光液晶显示器、主动矩阵式迷你发光二极管背光液晶显示器或主动矩阵式微型发光二极管背光液晶显示器。该液晶显示装置1000可以为手机、平板电脑、笔记本、游戏机、数码相机、车载导航仪、电子广告牌、自动取款机等具有显示功能的电子设备。\n\n[0061]以上对本申请所提供的一种背光驱动电路及液晶显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10917, 23971, '技术领域\n\n[0001]本申请涉及显示技术领域，特别是涉及一种显示面板及其制作方法以及包括有所述显示面板的显示装置。\n\n背景技术\n\n[0002]随着全面屏的普及和消费者对机身一体化的追求，CUP(camera under panel)技术已经成为中小尺寸显示领域开发重点。LCD因属于整面背光的被动发光，光学式传感器与光学显示无法在空间上重合，较OLED和Micro LED像素级主动式发光显示存在先天劣势。\n\n[0003]Micro LED因超高亮度，高对比度，响应时间快，性耐性好，透明度高，可绕性等物理特点被认为是下一代显示技术。Micro LED显示不存在高电流驱动下的寿命问题以及长时间显示的残影问题，且能够以更小的像素尺寸达到高亮显示，故更适合用来作为透明显示。但目前Micro LED主要依赖于大量转移的“加法制造”方式，在技术成熟度上较主流LCD和OLED技术低，面临晶粒制造成本高、巨量转移良率低等诸多挑战，故现阶段用Micro LED来大面积做完整的Micro LED显示器难度还很大，并且在与柔性电路板绑定的过程中，也会产生较大的边界，导致屏占比降低。\n\n[0004]因此，针对目前存在的缺陷，急需进行改进。\n\n发明内容\n\n[0005]本申请的目的在于提供一种显示面板及其制作方法、显示装置，通过在传感器模组所对应的显示区采用Micro LED，从而将小部分区域变为透明显示，以实现真正的全面屏显示，并在显示基板的侧面制作金属走线用于绑定柔性电路板，解决了全面屏制造时屏幕边界较大的问题，实现了极致窄边框。\n\n[0006]本申请提供一种显示面板，包括一显示基板，所述显示基板具有第一显示区以及邻接所述第一显示区的第二显示区，所述第一显示区内设置有第一像素发光单元，所述第一像素发光单元包括多个阵列设置于所述显示基板上Micro LED晶粒；所述第二显示区内设置有第二像素发光单元，所述第二像素发光单元不同于所述第一像素发光单元；其中，所述显示基板靠近所述第一显示区的侧面上设置有金属走线，所述金属走线用于将所述多个Micro LED晶粒与柔性电路板绑定。\n\n[0007]可选的，在本申请的一些实施例中，所述显示面板还包括：第一驱动电路，所述第一驱动电路设置于所述显示基板上且位于所述第一显示区或所述第二显示区内，用于驱动所述第一像素发光单元；第二驱动电路，所述第二驱动电路设置于所述显示基板上且位于所述第二显示区内，用于驱动所述第二像素发光单元。\n\n[0008]可选的，在本申请的一些实施例中，所述显示面板还包括封装层，所述封装层设置于所述第一像素发光单元的远离所述显示基板的一侧，并且覆盖所述第一像素发光单元；所述封装层的透明度大于或等于90％；所述封装层的厚度在10um至30um之间；所述封装层的平坦度小于或等于2um。\n\n[0009]可选的，在本申请的一些实施例中，所述第二像素发光单元为LCD显示单元；所述显示基板为一彩膜基板；所述显示面板还包括一阵列基板，所述阵列基板与所述彩膜基板相对设置；所述多个Micro LED晶粒设置于所述彩膜基板上。\n\n[0010]可选的，在本申请的一些实施例中，所述第二像素发光单元为OLED显示单元；所述显示基板为一玻璃基板；所述显示面板还包括一玻璃盖板，所述玻璃盖板贴附于所述第一像素发光单元以及所述第二像素发光单元远离所述显示基板的一侧。\n\n[0011]可选的，在本申请的一些实施例中，所述多个Micro LED晶粒在所述显示基板上的正投影的面积之和小于或等于所述第一显示区的面积的30％。\n\n[0012]相应的，本申请还提供一种显示面板的制作方法，用来制作所述显示面板，所述显示面板的制作方法包括如下步骤：步骤S1：提供一显示基板，具有第一显示区以及邻接所述第一显示区的第二显示区，并在所述显示基板靠近所述第一显示区的侧面上制备金属走线；步骤S2：在所述第一显示区制备第一像素发光单元于所述显示基板的一侧且形成一封装层以覆盖所述第一像素发光单元；其中，所述第一像素发光单元包括多个阵列设置于所述显示基板上Micro LED晶粒；步骤S3：在所述第二显示区制备第二像素发光单元于所述显示基板的一侧；其中，所述第二像素发光单元与所述第一像素发光单元位于所述显示基板的同一侧。\n\n[0013]可选的，在本申请的一些实施例中，在所述步骤S1中，所述显示基板为一彩膜基板；在所述步骤S2中，所述显示基板上还制备有第一驱动电路，所述第一驱动电路用于驱动所述第一像素发光单元；在所述步骤S3中，所述第二像素发光单元为LCD显示单元；所述显示面板的制作方法还包括：步骤S4：将一侧设置有第二驱动电路的阵列基板与所述显示基板对位贴合，并在所述阵列基板与所述显示基板之间注入液晶，形成液晶层。\n\n[0014]可选的，在本申请的一些实施例中，在所述步骤S1中，所述显示基板为一玻璃基板；在所述步骤S2中，所述显示基板上还制备有第一驱动电路，所述第一驱动电路用于驱动所述第一像素发光单元；在所述步骤S3中，所述显示基板上还制备有第二驱动电路，所述第二驱动电路用于驱动所述第二像素发光单元；所述第二像素发光单元为LCD显示单元或OLED显示单元；所述显示面板的制作方法还包括：步骤S4：提供一玻璃盖板，并将所述玻璃盖板贴附于所述第一像素发光单元以及所述第二像素发光单元远离所述显示基板的一侧。\n\n[0015]相应的，本申请还提供一种显示装置，包括上述实施例中任一项所述的显示面板，所述显示装置还包括：传感器模组，设置于所述显示基板的背离所述Micro LED晶粒的一侧，所述传感器模组对应所述第一显示区设置；背光模组，设置于所述显示基板设置有所述传感器模组的一侧且对应所述第二显示区设置；至少一偏光片，设置于所述显示面板的一侧或两侧，且所述偏光片对应所述第二显示区设置。\n\n[0016]相较于现有技术，本申请提供一种显示面板，将LCD或OLED与Micro LED进行组合制成一种全新的全面屏，可以降低成本，提升全面屏良率。具体地，通过在传感器模组所对应的第一显示区采用Micro LED显示，从而将传感器模组所对应的一小部分区域变为透明显示，从而实现真正的全面屏显示，同时小面积使用Micro LED显示可以在并不影响产品良率的情况下，实现大批量生产。并且在所述显示基板的侧面制作金属走线用于绑定柔性电路板，解决了全面屏制造时屏幕边界较大的问题，实现了极致窄边框。\n\n附图说明\n\n[0017]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0018]图1是本申请其中一实施例的显示面板的立体示意图；\n\n[0019]图2是本申请其中一实施例的显示面板的局部结构示意图；\n\n[0020]图3A至图3E是本申请第一显示区的多个实施例的平面示意图；\n\n[0021]图4是本申请其中一实施例的Micro LED晶粒的结构示意图；\n\n[0022]图5是图2中所述显示面板的制备流程示意图；\n\n[0023]图6是本申请其中一实施例的显示面板的层结构示意图；\n\n[0024]图7是图6中所述显示面板的制备流程示意图；\n\n[0025]图8是本申请另一种实施例的显示面板的结构示意图；\n\n[0026]图9是图8中所述显示面板的制备流程示意图；\n\n[0027]图10是本申请其中一实施例的显示装置的结构示意图。\n\n[0028]主要附图标记说明：\n\n[0029]\n\n[0030]\n\n具体实施方式\n\n[0031]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”、“下”、“左”和“右”可以是装置实际使用或工作状态的方向，也可以是参考附图中的图面方向，还可以是指相对的两个方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0032]具体地，请参阅图1至图2，本申请提供一种显示面板10，所述显示面板10包括一显示基板100，所述显示基板100具有第一显示区110以及邻接所述第一显示区110的第二显示区120；所述第一显示区110内设置有第一像素发光单元200，所述第一像素发光单元200包括多个阵列设置于所述显示基板100上的Micro LED晶粒210；所述第二显示区120内设置有不同于所述第一像素发光单元200的第二像素发光单元300；其中，所述显示基板100靠近所述第一显示区110的侧面上设置有金属走线400，所述金属走线400用于将所述多个MicroLED晶粒210与柔性电路板20绑定。通过在所述第一显示区110采用透明度较高的MicroLED，实现全面屏显示，并且采用在所述显示基板100的侧面进行金属走线设计，可以减少在所述显示基板100侧面进行柔性电路板20绑定时所述显示面板10的边界宽度，提高屏幕占比，从而提升显示效果。\n\n[0033]优选地，所述第二像素发光单元300为LCD显示单元或OLED显示单元中的一种。\n\n[0034]如图3A至图3E所示，所述显示基板100的所述第一显示区110的形状包括孔状、水滴状、V型槽状、刘海状以及药丸状，但不限于此。由于所述第一显示区110内的所述第一像素发光单元200的像素数目较少，这样设置可以保证所述第一像素发光单元200的转印良率，同时不影响所述第二显示区120内的显示效果，使所述显示面板10的显示画面更加均匀。\n\n[0035]在本申请的一些实施例中，如图5、图7所示，所述显示面板10还包括：第一驱动电路500与第二驱动电路600；所述第一驱动电路500设置于所述显示基板100上且设置于所述第一显示区110，当然还可以设置于所述第二显示区120内，用于驱动所述第一像素发光单元200；所述第二驱动电路600设置于所述显示基板100上且位于所述第二显示区120内，用于驱动所述第二像素发光单元300。优选地，所述第一驱动电路500设置于所述显示基板100上且位于所述第二显示区110内，可以提高所述第一显示区110的透明度。本领域技术人员可以注意的是，当所述第一驱动电路500位于所述第二显示区110内时，所述第一显示区内任保留有用于连接所述多个Micro LED晶粒210的必要线路。\n\n[0036]在本申请的一些实施例中，如图5、图7所示，所述显示面板10还包括一封装层700，所述封装层700设置于所述第一像素发光单元200远离所述显示基板100的一侧，并且覆盖所述第一像素发光单元200。所述封装层700为透明材料，所述封装层的透明度大于或等于90％。优选地，所述封装层700所采用的透明材料的消光系数趋近于零，也就说所述封装层700的透光率趋近于100％，可以保证透过所述封装层700的光的亮度，减少不必要的光亮损失，进一步提高背光的利用率。所述封装层700的厚度在10um至30um之间，例如：15um、20um、25um等，但不限于此。这样设置一方面可以保证所述封装层700的平坦度，由于所述第一像素发光单元200的表面并不平整，在所述封装层700在制备过程中，必然存在一定的误差，当所述封装层700达到一定厚度时，所述封装层700则会越来越平整，优选地，所述封装层700的平坦度小于或等于2um，例如：所述封装层700的厚度为20um±2um；另一方面可以有效地防止所述第一像素发光单元200受到外界环境的干涉造成不必要的损失，有效地保护所述第一像素发光单元200，提高所述第一像素发光单元200的稳定性。所述封装层700的材料包括氧化硅、氮化硅以及氮氧化硅中的至少一种，但不限于此，还可以是其他材料。\n\n[0037]在本申请的一些实施例中，所述多个Micro LED晶粒210在所述显示基板100上的正投影面积之和小于或等于所述第一显示区110的面积的30％。换句话说，所述多个MicroLED晶粒210的尺寸最大占所述第一显示区110的尺寸的30％，也就是说所述第一显示区110的透明度至少大于或等于70％。单个所述Micro LED晶粒210的尺寸为1un至100um之间，所述第一像素发光单元200中的单个第一子像素发光单元的尺寸为10un至500um之间，具体地，单个所述Micro LED晶粒210与单个所述第一子像素发光单元的尺寸比越小，所述第一显示区110的透明度越高，而所述第一像素发光单元200的面积一定时，单个所述第一子像素发光单元的尺寸越小，所述所述第一像素发光单元200的像素密度越高，显示分辨率越高。因此，可以根据实际情况合理地进行选择单个所述Micro LED晶粒210的尺寸以及单个所述第一子像素发光单元的尺寸。\n\n[0038]具体的，请参阅图4，在本申请的一些实施例中，所述Micro LED晶粒210的发光方式包括：电极面发光与基底面发光。如图4所示，所述Micro LED晶粒210包括一基底211，以及依次沉积于所述基底211上的一缓冲层212、一N型半导体层213、一发光功能层214和一P型半导体层215，其中，所述Micro LED晶粒210还包括一N型电极216以及一P型电极217，所述N型电极216与所述N型半导体层213接触，所述P型电极217与所述P型半导体层215接触。当所述Micro LED晶粒210为电极面发光时，所述发光功能层214发出的光从所述N型电极216以及所述P型电极217的一侧发出；当所述Micro LED晶粒210为基底面发光时，所述发光功能层214发出的光从所述基底211的一侧发出。因此，针对不同结构的所述显示面板，可以采用不同的发光方式的所述Micro LED晶粒210。并且本申请实施例中的所述Micro LED晶粒210并不以图4所示为限，还可以是其他结构，本申请不再赘述。\n\n[0039]具体的，请参阅图2至图5，本申请还提供一种如图2所述的显示面板10的制作方法，所述显示面板10的制作方法包括如下步骤：\n\n[0040]步骤S1：提供一显示基板100，具有第一显示区110以及邻接所述第一显示区110的第二显示区120，并在所述显示基板100靠近所述第一显示区110的侧面上制备金属走线400；\n\n[0041]步骤S2：在所述第一显示区110制备第一像素发光单元200于所述显示基板110的一侧且形成一封装层700以覆盖所述第一像素发光单元200；其中，所述第一像素发光单元200包括多个阵列设置于所述显示基板100上Micro LED晶粒210；\n\n[0042]步骤S3：在所述第二显示区120制备第二像素发光单元300于所述显示基板100的一侧；其中，所述第二像素发光单元300与所述第一像素发光单元200位于所述显示基板100的同一侧。\n\n[0043]具体的，请参阅图6至图7，在本申请的一些实施例中，所述显示基板100为一彩膜基板101。所述显示面板10包括相对设置的彩膜基板101和阵列基板102、以及设置于所述彩膜基板101和所述阵列基板102之间的液晶层103。所述第一像素发光单元200设置于所述彩膜基板101的朝向所述阵列基板102的一侧，且所述第一像素发光单元200位于所述第一显示区110内，所述第一像素发光单元200包括多个阵列设置的Micro LED晶粒210。所述第一驱动电路500设置于所述彩膜基板101与所述第一像素发光单元200之间且位于所述第一显示区110内，用于驱动所述第一像素发光单元200；所述封装层700设置于所述第一像素发光单元200远离所述彩膜基板101的一侧，并且覆盖所述第一像素发光单元200；所述第二像素发光单元300设置于所述彩膜基板101的朝向所述阵列基板102的一侧并位于所述第二显示区120内。也就是说，所述第二像素发光单元300与所述第一像素发光单元200设置于所述彩膜基板101的同一侧。所述第二驱动电路600设置于所述阵列基板102上且位于所述第二显示区120内，用于驱动所述第二像素发光单元300；所述液晶层103设置于所述彩膜基板101和所述阵列基板102之间，并且至少位于所述第二显示区内；其中，所述彩膜基板101靠近所述第一显示区110的侧面上设置有金属走线400，所述金属走线400用于将所述多个MicroLED晶粒210与柔性电路板20绑定。\n\n[0044]在本实施例中，请同时结合图6和图7所示，所述显示面板10的制备方法包括如下步骤：\n\n[0045]步骤S1：提供一显示基板100，具有第一显示区110以及邻接所述第一显示区110的第二显示区120，并在所述显示基板100靠近所述第一显示区110的侧面上制备金属走线400；其中，所述显示基板100为一彩膜基板101；\n\n[0046]步骤S2：在所述第一显示区110制备第一像素发光单元200于所述显示基板110的一侧且形成一封装层700以覆盖所述第一像素发光单元200；其中，所述第一像素发光单元200包括多个阵列设置于所述显示基板100上Micro LED晶粒210；其中，所述显示基板100上还制备有第一驱动电路500，所述第一驱动电路500用于驱动所述第一像素发光单元200；\n\n[0047]步骤S3：在所述第二显示区120制备第二像素发光单元300于所述显示基板100的一侧；其中，所述第二像素发光单元300与所述第一像素发光单元200位于所述显示基板100的同一侧；其中，所述第二像素发光单元300为LCD显示单元；\n\n[0048]步骤S4：提供一阵列基板102，所述阵列基板102的一侧设置有第二驱动电路600，并将所述阵列基板102与所述显示基板100对位贴合；其中，当所述阵列基板102与所述显示基板100对位贴合后，所述第二驱动电路600位于所述阵列基板102与所述显示基板100之间；\n\n[0049]步骤S5：在所述阵列基板102与所述显示基板100之间注入液晶，形成液晶层103。可以理解的是，在所述显示面板10的制备过程中，所述彩膜基板101制备时应采用弱碱性显影液，高温烘干时的温度在210℃至230℃之间。所述阵列基板102、所述液晶层103均为本领域常规结构，所述液晶层103通过封框胶密封于所述彩膜基板101与所述阵列基板102之间，本申请不再赘述。\n\n[0050]请参阅图8至图9，在本申请的另一些实施例中，所述显示面板10包括一显示基板100，所述显示基板100具有第一显示区110以及邻接所述第一显示区110的第二显示区120，所述第一显示区110内设置有第一像素发光单元200，所述第一像素发光单元200包括多个阵列设置于所述显示基板上的Micro LED晶粒210；所述第二显示区120内设置有不同于所述第一像素发光单元200的第二像素发光单元300；其中，所述显示基板100靠近所述第一显示区110的侧面上设置有金属走线400，所述金属走线400用于将所述多个Micro LED晶粒210与柔性电路板20绑定。所述显示面板10还包括：第一驱动电路500与第二驱动电路600；所述第一驱动电路500设置于所述显示基板100上且位于所述第一显示区110，用于驱动所述第一像素发光单元200；所述第二驱动电路600设置于所述显示基板100上且位于所述第二显示区120内，用于驱动所述第二像素发光单元300。\n\n[0051]在本实施例中，请同时结合图8和图9所示，所述显示面板10的制备方法包括如下步骤：\n\n[0052]步骤S1：提供一显示基板100，具有第一显示区110以及邻接所述第一显示区110的第二显示区120，并在所述显示基板100靠近所述第一显示区110的侧面上制备金属走线400；其中，所述显示基板100为一玻璃基板；\n\n[0053]步骤S2：在所述第一显示区110制备第一像素发光单元200于所述显示基板110的一侧且形成一封装层700以覆盖所述第一像素发光单元200；其中，所述第一像素发光单元200包括多个阵列设置于所述显示基板100上Micro LED晶粒210；其中，所述显示基板100上还制备有第一驱动电路500，所述第一驱动电路500用于驱动所述第一像素发光单元200；\n\n[0054]步骤S3：在所述第二显示区120制备第二像素发光单元300于所述显示基板100的一侧；其中，所述第二像素发光单元300与所述第一像素发光单元200位于所述显示基板100的同一侧；其中，所述显示基板100上还制备有第二驱动电路600，所述第二驱动电路600用于驱动所述第二像素发光单元300；所述第二像素发光单元300为LCD显示单元或OLED显示单元；\n\n[0055]步骤S4：提供一玻璃盖板800，并将所述玻璃盖板800贴附于所述第一像素发光单元200以及所述第二像素发光单元300远离所述显示基板100的一侧。本实施例中，所述第二像素发光单元300可以是LCD显示单元或OLED显示单元，但不限于此。具体地，所述LCD显示单元与OLED显示单元的制备方法为本领域常规方法即可，本申请不再赘述。在所述制备方法中，所述第一像素发光单元200以及所述第二像素发光单元300的制备过程包括光刻胶涂覆、掩膜版掩膜、曝光、显影、刻蚀、光刻胶剥离等工艺，具体地，本申请不再赘述。所述显示基板100侧面的所述金属走线400可采用金属蒸镀或溅镀或CVD等方法在侧面棱边整面大规模沉积金属膜层，然后通过激光烧蚀的方法烧出一条条走线，或者在所述显示基板100侧面采用光刻的工艺制程刻蚀出每条金属走线；再或者可以采用压印的方法将所述金属走线400制作在所述显示基板100的侧面棱边上，具体的所述显示基板100的侧边的所述金属走线400的制作方法本申请不做限制，所述金属走线400的制作金属亦不做限制，例如：铜。\n\n[0056]具体的，请参阅图10，本申请还提供一种显示装置1，包括上述实施例中的所述显示面板10，所述显示装置1还包括：传感器模组30与背光模组40，所述传感器模组30设置于所述显示基板100的一侧且对应所述第一显示区110设置。所述背光模组40设置于所述显示基板100上且与所述传感器模组30同侧设置，所述背光模组40对应所述第二显示区120。可以理解的是，当所述第二显示区为OLED显示时，由于所述OLED为自发光显示，则不需要所述背光模组40。\n\n[0057]在本申请的一些实施例中，所述显示面板10的至少一侧设置偏光片50，所述偏光片50对应所述第二显示区120设置。所述偏光片50可以只设置在所述显示面板10的一侧，也可以两侧同时设置，本申请并不做限定。\n\n[0058]相较于现有技术，本申请提供一种显示面板10，将LCD或OLED与Micro LED进行组合制成一种全新的全面屏，可以降低成本，提升全面屏良率。具体地，通过在传感器模组30所对应的第一显示区110采用Micro LED显示，从而将传感器模组30所对应的一小部分区域变为透明显示，从而实现真正的全面屏显示，同时小面积使用Micro LED显示可以在并不影响产品良率的情况下，实现大批量生产。并且在所述显示基板100的侧面制作金属走线400用于绑定柔性电路板20，解决了全面屏制造时屏幕边界较大的问题，实现了极致窄边框。\n\n[0059]本申请提供的显示装置1的有益效果与上述实施例提供的所述显示面板10的有益效果相同，在此不做赘述。所述显示装置1可以为手机、平板电脑、电视机、显示器、笔记本电脑、数码相框或导航仪等任何具有显示功能的产品或部件，优选为透明显示的产品。\n\n[0060]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0061]以上对本申请实施例所提供的一种彩膜基板100及其制备方法、显示装置10进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，特别是涉及一种显示面板及其制作方法以及包括有所述显示面板的显示装置。\n\n背景技术\n\n[0002]随着全面屏的普及和消费者对机身一体化的追求，CUP(camera under panel)技术已经成为中小尺寸显示领域开发重点。LCD因属于整面背光的被动发光，光学式传感器与光学显示无法在空间上重合，较OLED和Micro LED像素级主动式发光显示存在先天劣势。\n\n[0003]Micro LED因超高亮度，高对比度，响应时间快，性耐性好，透明度高，可绕性等物理特点被认为是下一代显示技术。Micro LED显示不存在高电流驱动下的寿命问题以及长时间显示的残影问题，且能够以更小的像素尺寸达到高亮显示，故更适合用来作为透明显示。但目前Micro LED主要依赖于大量转移的“加法制造”方式，在技术成熟度上较主流LCD和OLED技术低，面临晶粒制造成本高、巨量转移良率低等诸多挑战，故现阶段用Micro LED来大面积做完整的Micro LED显示器难度还很大，并且在与柔性电路板绑定的过程中，也会产生较大的边界，导致屏占比降低。\n\n[0004]因此，针对目前存在的缺陷，急需进行改进。\n\n发明内容\n\n[0005]本申请的目的在于提供一种显示面板及其制作方法、显示装置，通过在传感器模组所对应的显示区采用Micro LED，从而将小部分区域变为透明显示，以实现真正的全面屏显示，并在显示基板的侧面制作金属走线用于绑定柔性电路板，解决了全面屏制造时屏幕边界较大的问题，实现了极致窄边框。\n\n[0006]本申请提供一种显示面板，包括一显示基板，所述显示基板具有第一显示区以及邻接所述第一显示区的第二显示区，所述第一显示区内设置有第一像素发光单元，所述第一像素发光单元包括多个阵列设置于所述显示基板上Micro LED晶粒；所述第二显示区内设置有第二像素发光单元，所述第二像素发光单元不同于所述第一像素发光单元；其中，所述显示基板靠近所述第一显示区的侧面上设置有金属走线，所述金属走线用于将所述多个Micro LED晶粒与柔性电路板绑定。\n\n[0007]可选的，在本申请的一些实施例中，所述显示面板还包括：第一驱动电路，所述第一驱动电路设置于所述显示基板上且位于所述第一显示区或所述第二显示区内，用于驱动所述第一像素发光单元；第二驱动电路，所述第二驱动电路设置于所述显示基板上且位于所述第二显示区内，用于驱动所述第二像素发光单元。\n\n[0008]可选的，在本申请的一些实施例中，所述显示面板还包括封装层，所述封装层设置于所述第一像素发光单元的远离所述显示基板的一侧，并且覆盖所述第一像素发光单元；所述封装层的透明度大于或等于90％；所述封装层的厚度在10um至30um之间；所述封装层的平坦度小于或等于2um。\n\n[0009]可选的，在本申请的一些实施例中，所述第二像素发光单元为LCD显示单元；所述显示基板为一彩膜基板；所述显示面板还包括一阵列基板，所述阵列基板与所述彩膜基板相对设置；所述多个Micro LED晶粒设置于所述彩膜基板上。\n\n[0010]可选的，在本申请的一些实施例中，所述第二像素发光单元为OLED显示单元；所述显示基板为一玻璃基板；所述显示面板还包括一玻璃盖板，所述玻璃盖板贴附于所述第一像素发光单元以及所述第二像素发光单元远离所述显示基板的一侧。\n\n[0011]可选的，在本申请的一些实施例中，所述多个Micro LED晶粒在所述显示基板上的正投影的面积之和小于或等于所述第一显示区的面积的30％。\n\n[0012]相应的，本申请还提供一种显示面板的制作方法，用来制作所述显示面板，所述显示面板的制作方法包括如下步骤：步骤S1：提供一显示基板，具有第一显示区以及邻接所述第一显示区的第二显示区，并在所述显示基板靠近所述第一显示区的侧面上制备金属走线；步骤S2：在所述第一显示区制备第一像素发光单元于所述显示基板的一侧且形成一封装层以覆盖所述第一像素发光单元；其中，所述第一像素发光单元包括多个阵列设置于所述显示基板上Micro LED晶粒；步骤S3：在所述第二显示区制备第二像素发光单元于所述显示基板的一侧；其中，所述第二像素发光单元与所述第一像素发光单元位于所述显示基板的同一侧。\n\n[0013]可选的，在本申请的一些实施例中，在所述步骤S1中，所述显示基板为一彩膜基板；在所述步骤S2中，所述显示基板上还制备有第一驱动电路，所述第一驱动电路用于驱动所述第一像素发光单元；在所述步骤S3中，所述第二像素发光单元为LCD显示单元；所述显示面板的制作方法还包括：步骤S4：将一侧设置有第二驱动电路的阵列基板与所述显示基板对位贴合，并在所述阵列基板与所述显示基板之间注入液晶，形成液晶层。\n\n[0014]可选的，在本申请的一些实施例中，在所述步骤S1中，所述显示基板为一玻璃基板；在所述步骤S2中，所述显示基板上还制备有第一驱动电路，所述第一驱动电路用于驱动所述第一像素发光单元；在所述步骤S3中，所述显示基板上还制备有第二驱动电路，所述第二驱动电路用于驱动所述第二像素发光单元；所述第二像素发光单元为LCD显示单元或OLED显示单元；所述显示面板的制作方法还包括：步骤S4：提供一玻璃盖板，并将所述玻璃盖板贴附于所述第一像素发光单元以及所述第二像素发光单元远离所述显示基板的一侧。\n\n[0015]相应的，本申请还提供一种显示装置，包括上述实施例中任一项所述的显示面板，所述显示装置还包括：传感器模组，设置于所述显示基板的背离所述Micro LED晶粒的一侧，所述传感器模组对应所述第一显示区设置；背光模组，设置于所述显示基板设置有所述传感器模组的一侧且对应所述第二显示区设置；至少一偏光片，设置于所述显示面板的一侧或两侧，且所述偏光片对应所述第二显示区设置。\n\n[0016]相较于现有技术，本申请提供一种显示面板，将LCD或OLED与Micro LED进行组合制成一种全新的全面屏，可以降低成本，提升全面屏良率。具体地，通过在传感器模组所对应的第一显示区采用Micro LED显示，从而将传感器模组所对应的一小部分区域变为透明显示，从而实现真正的全面屏显示，同时小面积使用Micro LED显示可以在并不影响产品良率的情况下，实现大批量生产。并且在所述显示基板的侧面制作金属走线用于绑定柔性电路板，解决了全面屏制造时屏幕边界较大的问题，实现了极致窄边框。\n\n附图说明\n\n[0017]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0018]图1是本申请其中一实施例的显示面板的立体示意图；\n\n[0019]图2是本申请其中一实施例的显示面板的局部结构示意图；\n\n[0020]图3A至图3E是本申请第一显示区的多个实施例的平面示意图；\n\n[0021]图4是本申请其中一实施例的Micro LED晶粒的结构示意图；\n\n[0022]图5是图2中所述显示面板的制备流程示意图；\n\n[0023]图6是本申请其中一实施例的显示面板的层结构示意图；\n\n[0024]图7是图6中所述显示面板的制备流程示意图；\n\n[0025]图8是本申请另一种实施例的显示面板的结构示意图；\n\n[0026]图9是图8中所述显示面板的制备流程示意图；\n\n[0027]图10是本申请其中一实施例的显示装置的结构示意图。\n\n[0028]主要附图标记说明：\n\n[0029]\n\n[0030]\n\n具体实施方式\n\n[0031]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”、“下”、“左”和“右”可以是装置实际使用或工作状态的方向，也可以是参考附图中的图面方向，还可以是指相对的两个方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0032]具体地，请参阅图1至图2，本申请提供一种显示面板10，所述显示面板10包括一显示基板100，所述显示基板100具有第一显示区110以及邻接所述第一显示区110的第二显示区120；所述第一显示区110内设置有第一像素发光单元200，所述第一像素发光单元200包括多个阵列设置于所述显示基板100上的Micro LED晶粒210；所述第二显示区120内设置有不同于所述第一像素发光单元200的第二像素发光单元300；其中，所述显示基板100靠近所述第一显示区110的侧面上设置有金属走线400，所述金属走线400用于将所述多个MicroLED晶粒210与柔性电路板20绑定。通过在所述第一显示区110采用透明度较高的MicroLED，实现全面屏显示，并且采用在所述显示基板100的侧面进行金属走线设计，可以减少在所述显示基板100侧面进行柔性电路板20绑定时所述显示面板10的边界宽度，提高屏幕占比，从而提升显示效果。\n\n[0033]优选地，所述第二像素发光单元300为LCD显示单元或OLED显示单元中的一种。\n\n[0034]如图3A至图3E所示，所述显示基板100的所述第一显示区110的形状包括孔状、水滴状、V型槽状、刘海状以及药丸状，但不限于此。由于所述第一显示区110内的所述第一像素发光单元200的像素数目较少，这样设置可以保证所述第一像素发光单元200的转印良率，同时不影响所述第二显示区120内的显示效果，使所述显示面板10的显示画面更加均匀。\n\n[0035]在本申请的一些实施例中，如图5、图7所示，所述显示面板10还包括：第一驱动电路500与第二驱动电路600；所述第一驱动电路500设置于所述显示基板100上且设置于所述第一显示区110，当然还可以设置于所述第二显示区120内，用于驱动所述第一像素发光单元200；所述第二驱动电路600设置于所述显示基板100上且位于所述第二显示区120内，用于驱动所述第二像素发光单元300。优选地，所述第一驱动电路500设置于所述显示基板100上且位于所述第二显示区110内，可以提高所述第一显示区110的透明度。本领域技术人员可以注意的是，当所述第一驱动电路500位于所述第二显示区110内时，所述第一显示区内任保留有用于连接所述多个Micro LED晶粒210的必要线路。\n\n[0036]在本申请的一些实施例中，如图5、图7所示，所述显示面板10还包括一封装层700，所述封装层700设置于所述第一像素发光单元200远离所述显示基板100的一侧，并且覆盖所述第一像素发光单元200。所述封装层700为透明材料，所述封装层的透明度大于或等于90％。优选地，所述封装层700所采用的透明材料的消光系数趋近于零，也就说所述封装层700的透光率趋近于100％，可以保证透过所述封装层700的光的亮度，减少不必要的光亮损失，进一步提高背光的利用率。所述封装层700的厚度在10um至30um之间，例如：15um、20um、25um等，但不限于此。这样设置一方面可以保证所述封装层700的平坦度，由于所述第一像素发光单元200的表面并不平整，在所述封装层700在制备过程中，必然存在一定的误差，当所述封装层700达到一定厚度时，所述封装层700则会越来越平整，优选地，所述封装层700的平坦度小于或等于2um，例如：所述封装层700的厚度为20um±2um；另一方面可以有效地防止所述第一像素发光单元200受到外界环境的干涉造成不必要的损失，有效地保护所述第一像素发光单元200，提高所述第一像素发光单元200的稳定性。所述封装层700的材料包括氧化硅、氮化硅以及氮氧化硅中的至少一种，但不限于此，还可以是其他材料。\n\n[0037]在本申请的一些实施例中，所述多个Micro LED晶粒210在所述显示基板100上的正投影面积之和小于或等于所述第一显示区110的面积的30％。换句话说，所述多个MicroLED晶粒210的尺寸最大占所述第一显示区110的尺寸的30％，也就是说所述第一显示区110的透明度至少大于或等于70％。单个所述Micro LED晶粒210的尺寸为1un至100um之间，所述第一像素发光单元200中的单个第一子像素发光单元的尺寸为10un至500um之间，具体地，单个所述Micro LED晶粒210与单个所述第一子像素发光单元的尺寸比越小，所述第一显示区110的透明度越高，而所述第一像素发光单元200的面积一定时，单个所述第一子像素发光单元的尺寸越小，所述所述第一像素发光单元200的像素密度越高，显示分辨率越高。因此，可以根据实际情况合理地进行选择单个所述Micro LED晶粒210的尺寸以及单个所述第一子像素发光单元的尺寸。\n\n[0038]具体的，请参阅图4，在本申请的一些实施例中，所述Micro LED晶粒210的发光方式包括：电极面发光与基底面发光。如图4所示，所述Micro LED晶粒210包括一基底211，以及依次沉积于所述基底211上的一缓冲层212、一N型半导体层213、一发光功能层214和一P型半导体层215，其中，所述Micro LED晶粒210还包括一N型电极216以及一P型电极217，所述N型电极216与所述N型半导体层213接触，所述P型电极217与所述P型半导体层215接触。当所述Micro LED晶粒210为电极面发光时，所述发光功能层214发出的光从所述N型电极216以及所述P型电极217的一侧发出；当所述Micro LED晶粒210为基底面发光时，所述发光功能层214发出的光从所述基底211的一侧发出。因此，针对不同结构的所述显示面板，可以采用不同的发光方式的所述Micro LED晶粒210。并且本申请实施例中的所述Micro LED晶粒210并不以图4所示为限，还可以是其他结构，本申请不再赘述。\n\n[0039]具体的，请参阅图2至图5，本申请还提供一种如图2所述的显示面板10的制作方法，所述显示面板10的制作方法包括如下步骤：\n\n[0040]步骤S1：提供一显示基板100，具有第一显示区110以及邻接所述第一显示区110的第二显示区120，并在所述显示基板100靠近所述第一显示区110的侧面上制备金属走线400；\n\n[0041]步骤S2：在所述第一显示区110制备第一像素发光单元200于所述显示基板110的一侧且形成一封装层700以覆盖所述第一像素发光单元200；其中，所述第一像素发光单元200包括多个阵列设置于所述显示基板100上Micro LED晶粒210；\n\n[0042]步骤S3：在所述第二显示区120制备第二像素发光单元300于所述显示基板100的一侧；其中，所述第二像素发光单元300与所述第一像素发光单元200位于所述显示基板100的同一侧。\n\n[0043]具体的，请参阅图6至图7，在本申请的一些实施例中，所述显示基板100为一彩膜基板101。所述显示面板10包括相对设置的彩膜基板101和阵列基板102、以及设置于所述彩膜基板101和所述阵列基板102之间的液晶层103。所述第一像素发光单元200设置于所述彩膜基板101的朝向所述阵列基板102的一侧，且所述第一像素发光单元200位于所述第一显示区110内，所述第一像素发光单元200包括多个阵列设置的Micro LED晶粒210。所述第一驱动电路500设置于所述彩膜基板101与所述第一像素发光单元200之间且位于所述第一显示区110内，用于驱动所述第一像素发光单元200；所述封装层700设置于所述第一像素发光单元200远离所述彩膜基板101的一侧，并且覆盖所述第一像素发光单元200；所述第二像素发光单元300设置于所述彩膜基板101的朝向所述阵列基板102的一侧并位于所述第二显示区120内。也就是说，所述第二像素发光单元300与所述第一像素发光单元200设置于所述彩膜基板101的同一侧。所述第二驱动电路600设置于所述阵列基板102上且位于所述第二显示区120内，用于驱动所述第二像素发光单元300；所述液晶层103设置于所述彩膜基板101和所述阵列基板102之间，并且至少位于所述第二显示区内；其中，所述彩膜基板101靠近所述第一显示区110的侧面上设置有金属走线400，所述金属走线400用于将所述多个MicroLED晶粒210与柔性电路板20绑定。\n\n[0044]在本实施例中，请同时结合图6和图7所示，所述显示面板10的制备方法包括如下步骤：\n\n[0045]步骤S1：提供一显示基板100，具有第一显示区110以及邻接所述第一显示区110的第二显示区120，并在所述显示基板100靠近所述第一显示区110的侧面上制备金属走线400；其中，所述显示基板100为一彩膜基板101；\n\n[0046]步骤S2：在所述第一显示区110制备第一像素发光单元200于所述显示基板110的一侧且形成一封装层700以覆盖所述第一像素发光单元200；其中，所述第一像素发光单元200包括多个阵列设置于所述显示基板100上Micro LED晶粒210；其中，所述显示基板100上还制备有第一驱动电路500，所述第一驱动电路500用于驱动所述第一像素发光单元200；\n\n[0047]步骤S3：在所述第二显示区120制备第二像素发光单元300于所述显示基板100的一侧；其中，所述第二像素发光单元300与所述第一像素发光单元200位于所述显示基板100的同一侧；其中，所述第二像素发光单元300为LCD显示单元；\n\n[0048]步骤S4：提供一阵列基板102，所述阵列基板102的一侧设置有第二驱动电路600，并将所述阵列基板102与所述显示基板100对位贴合；其中，当所述阵列基板102与所述显示基板100对位贴合后，所述第二驱动电路600位于所述阵列基板102与所述显示基板100之间；\n\n[0049]步骤S5：在所述阵列基板102与所述显示基板100之间注入液晶，形成液晶层103。可以理解的是，在所述显示面板10的制备过程中，所述彩膜基板101制备时应采用弱碱性显影液，高温烘干时的温度在210℃至230℃之间。所述阵列基板102、所述液晶层103均为本领域常规结构，所述液晶层103通过封框胶密封于所述彩膜基板101与所述阵列基板102之间，本申请不再赘述。\n\n[0050]请参阅图8至图9，在本申请的另一些实施例中，所述显示面板10包括一显示基板100，所述显示基板100具有第一显示区110以及邻接所述第一显示区110的第二显示区120，所述第一显示区110内设置有第一像素发光单元200，所述第一像素发光单元200包括多个阵列设置于所述显示基板上的Micro LED晶粒210；所述第二显示区120内设置有不同于所述第一像素发光单元200的第二像素发光单元300；其中，所述显示基板100靠近所述第一显示区110的侧面上设置有金属走线400，所述金属走线400用于将所述多个Micro LED晶粒210与柔性电路板20绑定。所述显示面板10还包括：第一驱动电路500与第二驱动电路600；所述第一驱动电路500设置于所述显示基板100上且位于所述第一显示区110，用于驱动所述第一像素发光单元200；所述第二驱动电路600设置于所述显示基板100上且位于所述第二显示区120内，用于驱动所述第二像素发光单元300。\n\n[0051]在本实施例中，请同时结合图8和图9所示，所述显示面板10的制备方法包括如下步骤：\n\n[0052]步骤S1：提供一显示基板100，具有第一显示区110以及邻接所述第一显示区110的第二显示区120，并在所述显示基板100靠近所述第一显示区110的侧面上制备金属走线400；其中，所述显示基板100为一玻璃基板；\n\n[0053]步骤S2：在所述第一显示区110制备第一像素发光单元200于所述显示基板110的一侧且形成一封装层700以覆盖所述第一像素发光单元200；其中，所述第一像素发光单元200包括多个阵列设置于所述显示基板100上Micro LED晶粒210；其中，所述显示基板100上还制备有第一驱动电路500，所述第一驱动电路500用于驱动所述第一像素发光单元200；\n\n[0054]步骤S3：在所述第二显示区120制备第二像素发光单元300于所述显示基板100的一侧；其中，所述第二像素发光单元300与所述第一像素发光单元200位于所述显示基板100的同一侧；其中，所述显示基板100上还制备有第二驱动电路600，所述第二驱动电路600用于驱动所述第二像素发光单元300；所述第二像素发光单元300为LCD显示单元或OLED显示单元；\n\n[0055]步骤S4：提供一玻璃盖板800，并将所述玻璃盖板800贴附于所述第一像素发光单元200以及所述第二像素发光单元300远离所述显示基板100的一侧。本实施例中，所述第二像素发光单元300可以是LCD显示单元或OLED显示单元，但不限于此。具体地，所述LCD显示单元与OLED显示单元的制备方法为本领域常规方法即可，本申请不再赘述。在所述制备方法中，所述第一像素发光单元200以及所述第二像素发光单元300的制备过程包括光刻胶涂覆、掩膜版掩膜、曝光、显影、刻蚀、光刻胶剥离等工艺，具体地，本申请不再赘述。所述显示基板100侧面的所述金属走线400可采用金属蒸镀或溅镀或CVD等方法在侧面棱边整面大规模沉积金属膜层，然后通过激光烧蚀的方法烧出一条条走线，或者在所述显示基板100侧面采用光刻的工艺制程刻蚀出每条金属走线；再或者可以采用压印的方法将所述金属走线400制作在所述显示基板100的侧面棱边上，具体的所述显示基板100的侧边的所述金属走线400的制作方法本申请不做限制，所述金属走线400的制作金属亦不做限制，例如：铜。\n\n[0056]具体的，请参阅图10，本申请还提供一种显示装置1，包括上述实施例中的所述显示面板10，所述显示装置1还包括：传感器模组30与背光模组40，所述传感器模组30设置于所述显示基板100的一侧且对应所述第一显示区110设置。所述背光模组40设置于所述显示基板100上且与所述传感器模组30同侧设置，所述背光模组40对应所述第二显示区120。可以理解的是，当所述第二显示区为OLED显示时，由于所述OLED为自发光显示，则不需要所述背光模组40。\n\n[0057]在本申请的一些实施例中，所述显示面板10的至少一侧设置偏光片50，所述偏光片50对应所述第二显示区120设置。所述偏光片50可以只设置在所述显示面板10的一侧，也可以两侧同时设置，本申请并不做限定。\n\n[0058]相较于现有技术，本申请提供一种显示面板10，将LCD或OLED与Micro LED进行组合制成一种全新的全面屏，可以降低成本，提升全面屏良率。具体地，通过在传感器模组30所对应的第一显示区110采用Micro LED显示，从而将传感器模组30所对应的一小部分区域变为透明显示，从而实现真正的全面屏显示，同时小面积使用Micro LED显示可以在并不影响产品良率的情况下，实现大批量生产。并且在所述显示基板100的侧面制作金属走线400用于绑定柔性电路板20，解决了全面屏制造时屏幕边界较大的问题，实现了极致窄边框。\n\n[0059]本申请提供的显示装置1的有益效果与上述实施例提供的所述显示面板10的有益效果相同，在此不做赘述。所述显示装置1可以为手机、平板电脑、电视机、显示器、笔记本电脑、数码相框或导航仪等任何具有显示功能的产品或部件，优选为透明显示的产品。\n\n[0060]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0061]以上对本申请实施例所提供的一种彩膜基板100及其制备方法、显示装置10进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10918, 23972, '技术领域\n\n[0001]本申请涉及显示技术领域，特别涉及一种Mini LED背光板的制作方法及Mini LED背光板。\n\n背景技术\n\n[0002]在Mini LED背光板制作中为保证薄膜晶体管器件工作稳定性，而且尽可能增大光利用率和光学品味，有一道钝化涂层制程，钝化涂层膜厚80％。为使钝化涂层能够在设定的位置形成图案，需要在基板的表面上设置金属标记物进行曝光机对位，曝光机在利用设置的金属标记物进行对位时，光源穿透钝化涂层，在金属标记物上进行反射，进而输入具有检测反射光功能的CCD(电荷耦合器件)镜头，从而完成钝化涂层在曝光机里的对位过程，从而使得钝化涂层可以按照设定的位置及尺寸，形成相应的图案。现有一种钝化涂层的形成方式是将基板的表面涂满钝化涂层，对于反射率较高的钝化涂层材料来说，光源经过钝化涂层后大部分光都被直接反射出去，而很难到达金属标记物表面，无法对曝光机进行准确对位，导致钝化涂层无法形成设定的图案；另外，在钝化涂层制程完成后续进行切割成相应的尺寸时，由于钝化涂层膜厚较高，且材料固有特性，在切割时容易出现切割区域的钝化涂层呈锯齿状，严重时会导致出现边缘龟裂脱落状况。现有另一种钝化涂层的形成方式是，在基板的表面上设置金属标记物的整个边缘上不涂布钝化涂层，便于CCD镜头读取金属标记物的位置以对曝光机准确定位，但是浪费了基板边缘区域，无法实现基板最大利用率，会导致产品成本急剧升高。\n\n发明内容\n\n[0003]本申请实施例提供一种Mini LED背光板的制作方法及Mini LED背光板，能够形成设定图案的钝化涂层，同时实现基板最大利用率，降低产品成本。\n\n[0004]本申请实施例提供一种Mini LED背光板的制作方法，包括如下步骤：\n\n[0005]提供基板，所述基板一侧的表面上划分有至少一个显示区，所述基板一侧的表面上除去所述至少一个显示区的其他区域为非显示区，所述非显示区内划分有至少一个标记区，所述标记区上设置有金属标记物；\n\n[0006]在所述基板一侧的表面上罩上面罩，所述面罩覆盖所述基板一侧的表面的所述至少一个显示区和部分所述非显示区，以使所述至少一个标记区裸露在外，采用亲水性材料在所述至少一个标记区上形成一层薄膜；\n\n[0007]移开所述面罩，在所述基板一侧的整个表面上涂布疏水性的材料形成钝化涂层。\n\n[0008]进一步地，提供基板，所述基板一侧的表面上划分有至少一个显示区，所述基板一侧的表面上除去所述至少一个显示区的其他区域为非显示区，所述非显示区内划分有至少一个标记区，所述标记区上设置有金属标记物的步骤包括：\n\n[0009]所述基板一侧的表面上划分有呈矩形阵列排布的多个显示区，所述非显示区内划分有多个标记区，所述多个标记区分别与所述多个显示区一一对应设置，所述非显示区内还划分有将任意相邻两个所述显示区分隔开的多条切割区；\n\n[0010]在所述基板一侧的表面上罩上面罩，所述面罩覆盖所述基板一侧的表面的所述至少一个显示区和部分所述非显示区，以使所述至少一个标记区裸露在外，采用亲水性材料在所述至少一个标记区上形成一层薄膜的步骤包括：\n\n[0011]所述面罩覆盖所述基板一侧的表面的所述多个显示区和部分所述非显示区，所述多个标记区和多条切割区裸露在外，采用亲水性材料在所述多个标记区和多条切割区上形成一层薄膜；\n\n[0012]移开所述面罩，在所述基板一侧的表面上涂布疏水性的材料形成钝化涂层的步骤之后还包括如下步骤：\n\n[0013]将所述基板沿着所述多条切割区切割形成单片的背光板。\n\n[0014]进一步地，所述钝化涂层的材料为WPR；\n\n[0015]移开所述面罩，在所述基板一侧的表面上涂布疏水性的材料形成钝化涂层的步骤与将所述基板沿着所述多条切割区切割形成单片的背光板的步骤之间还包括如下步骤：\n\n[0016]对所述基板依次进行第一次烘烤、曝光、显影和第二次烘烤处理。\n\n[0017]进一步地，所述钝化涂层的厚度小于10微米。\n\n[0018]进一步地，所述亲水性材料为聚甲基丙烯酸甲酯。\n\n[0019]进一步地，采用蒸汽喷雾方式或喷淋方式将所述亲水性材料在所述多个标记区和多条切割区上形成所述薄膜。\n\n[0020]本申请实施例还提供一种Mini LED背光板的制作方法，包括如下步骤：\n\n[0021]提供基板，所述基板一侧的表面上划分有多个显示区，所述基板一侧的表面上除去所述多个显示区的其他区域为非显示区，所述非显示区内划分有将任意相邻两个所述显示区分隔开的多条切割区；\n\n[0022]在所述基板一侧的表面上罩上面罩，所述面罩覆盖所述基板一侧的表面的所述多个显示区和部分所述非显示区，以使所述多条切割区裸露在外，采用亲水性材料在所述多条切割区上形成一层薄膜；\n\n[0023]移开所述面罩，在所述基板一侧的整个表面上涂布疏水性的材料形成钝化涂层；\n\n[0024]将所述基板沿着所述多条切割区切割形成单片的背光板。\n\n[0025]进一步地，提供基板，所述基板一侧的表面上划分有多个显示区，所述基板一侧的表面上除去所述多个显示区的其他区域为非显示区，所述非显示区内划分有将任意相邻两个所述显示区分隔开的多条切割区的步骤包括：\n\n[0026]所述非显示区内还划分有多个标记区，所述多个标记区分别与所述多个显示区一一对应设置，所述标记区上设置有金属标记物；\n\n[0027]在所述基板一侧的表面上罩上面罩，所述面罩覆盖所述基板一侧的表面的所述多个显示区和部分所述非显示区，以使所述多条切割区裸露在外，采用亲水性材料在所述多条切割区上形成一层薄膜的步骤包括：\n\n[0028]所述面罩覆盖所述基板一侧的表面的所述多个显示区和部分所述非显示区，以使所述多个标记区和多条切割区裸露在外，采用亲水性材料在所述多个标记区和多条切割区上形成一层薄膜。\n\n[0029]进一步地，所述钝化涂层的材料为WPR；\n\n[0030]移开所述面罩，在所述基板一侧的表面上涂布疏水性的材料形成钝化涂层的步骤与将所述基板沿着所述多条切割区切割形成单片的背光板的步骤之间还包括如下步骤：\n\n[0031]对所述基板依次进行第一次烘烤、曝光、显影和第二次烘烤处理。\n\n[0032]本申请实施例还提供一种MINILED背光板，采用如上所述制作方法制成。\n\n[0033]本申请实施例的Mini LED背光板的制作方法中，通过在基板一侧的表面上罩上面罩来覆盖基板一侧的表面上除去至少一个标记区的其他区域，采用亲水性材料在裸露在外的至少一个标记区上形成一层薄膜，移开面罩并在基板一侧的整个表面上涂布疏水性的钝化涂层，由于至少一个标记区上形成的亲水性薄膜可使疏水性的钝化涂层在涂布时难以成膜而将金属标记物露出，从而可以对曝光机准确定位，能够形成设定图案的钝化涂层；同时，基板的表面除去至少一个标记区的其他区域均可涂布钝化涂层，能够实现基板最大利用率，降低产品成本。\n\n附图说明\n\n[0034]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0035]图1为本申请实施例提供的一种Mini LED背光板的制作方法的流程框图。\n\n[0036]图2为本申请实施例提供的第一种工艺流程图。\n\n[0037]图3为本申请实施例提供的Mini LED背光板的结构示意图。\n\n[0038]图4为本申请实施例提供的形成驱动电路结构的流程框图。\n\n[0039]图5为本申请实施例提供的第二种工艺流程图。\n\n[0040]图6为本申请实施例提供的第三种工艺流程图。\n\n[0041]图7为本申请实施例提供的第四种工艺流程图。\n\n[0042]图8为本申请实施例提供的第五种工艺流程图。\n\n[0043]图9为本申请实施例提供的第六种工艺流程图。\n\n[0044]图10为本申请实施例提供的第七种工艺流程图。\n\n[0045]图11为本申请实施例提供的第八种工艺流程图。\n\n[0046]图12为本申请实施例提供的第九种工艺流程图。\n\n[0047]图13为本申请实施例提供的第十种工艺流程图。\n\n[0048]图14为本申请实施例提供的第十一种工艺流程图。\n\n[0049]图15为本申请实施例提供的另一种Mini LED背光板的制作方法的流程框图。\n\n具体实施方式\n\n[0050]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0051]请参阅图1-14，图1为本申请实施例提供的一种Mini LED背光板的制作方法的流程框图，图2为本申请实施例提供的第一种工艺流程图，图3为本申请实施例提供的MiniLED背光板的结构示意图，图4为本申请实施例提供的形成驱动电路结构的流程框图，图5为本申请实施例提供的第二种工艺流程图，图6为本申请实施例提供的第三种工艺流程图，图7为本申请实施例提供的第四种工艺流程图，图8为本申请实施例提供的第五种工艺流程图，图9为本申请实施例提供的第六种工艺流程图，图10为本申请实施例提供的第七种工艺流程图，图11为本申请实施例提供的第八种工艺流程图，图12为本申请实施例提供的第九种工艺流程图，图13为本申请实施例提供的第十种工艺流程图，图14为本申请实施例提供的第十一种工艺流程图。本申请实施例中，Mini LED背光板的制作方法包括如下步骤：\n\n[0052]步骤10，如图2所示，提供基板100，基板100一侧的表面上划分有呈矩形阵列排布的多个显示区110，基板100一侧的表面上除去多个显示区110的其他区域为非显示区120，非显示区120内划分有多个标记区130，多个标记区130分别与多个显示区110一一对应设置，每个标记区130上设置有金属标记物140，非显示区120内还划分有将任意相邻两个显示区110分隔开的多条切割区150。\n\n[0053]步骤10中，基板100可以为玻璃基板，应当理解的是根据应用需求，基板100也可以用其他合适的刚性材质或柔性材质制作。显示区110用于设置驱动电路和发光器件以提供显示功能，显示区110优选地设置为呈矩形阵列排布的多个显示区110，从而便于在一块基板100上加工制作多个背光板以提高生产效率。多个标记区130分别与多个显示区110一一对应设置，每个标记区130上设置有金属标记物140，通过金属标记物140来对曝光机准确定位，从而形成设定图案的钝化涂层。背光板制作完成后，可以沿着多条切割区150切割成多个小片。应当理解的是，基板100上也可以仅设置一个显示区110和一个与之相对应的标记区130，此时背光板制备完成后无需切割成小片，因此基板100的一侧表面上不用划分切割区150。\n\n[0054]步骤20，如图3所示，在基板100的显示区上形成驱动电路200结构。\n\n[0055]驱动电路200包括栅极210、第一电极220、第二电极230、第三电极270、源漏电极240、有源层250以及第一绑定电极260，栅极210与第一电极220同层设置，栅极210、源漏电极240和有源层250构成薄膜晶体管，第一电极220、第二电极230和第三电极270位于薄膜晶体管的一侧，第一绑定电极260位于薄膜晶体管的另一侧，第二电极230与第一电极220电连接，第三电极270与第二电极230电连接，第三电极270用于与覆晶薄膜电连接，第一绑定电极260用于与发光二极管电连接。\n\n[0056]一些实施例中，如图4所示，在基板100的显示区上形成驱动电路200结构的步骤包括如下步骤：\n\n[0057]步骤21，在基板100上形成栅极210以及第一电极220。\n\n[0058]可选的，如图5、6所示，步骤21中，在基板100上形成第一导电层300，对第一导电层300图案化处理，得到同层设置的栅极210以及第一电极220。\n\n[0059]具体的，在基板100上形成整面的第一导电层300，形成覆盖第一导电层300的整面光阻层，利用光罩对光阻层进行曝光，且利用显影液对光阻层进行显影处理，蚀刻未被光阻层覆盖的第一导电层300，去除剩余的光阻层，得栅极210以及第一电极220。\n\n[0060]步骤22，形成第二电极230、源漏电极240、有源层250以及第一绑定电极260，第二电极230与第一电极220电连接。\n\n[0061]可选的，如图7-10所示，步骤22中，形成覆盖栅极210、第一电极220以及基板100的第一绝缘层400，在第一绝缘层400远离基板100的一侧形成半导体层500，形成贯穿第一绝缘层400以及半导体层500并连通至第一电极220的第一过孔280；在第一过孔280中以及半导体层500上形成第二导电层600，对第二导电层600以及半导体层500图案化处理，得到第二电极230、源漏电极240、有源层250以及第一绑定电极260，第二电极230通过第一过孔280与第一电极220电连接。\n\n[0062]具体的，采用化学气相沉积形成覆盖栅极210、第一电极220以及基板100的第一绝缘层400，第一绝缘层400为栅极绝缘层，再依次形成覆盖第一绝缘层400的非晶硅层510以及n型掺杂非晶硅层520。在n型掺杂非晶硅层520上形成整面的光阻层，利用光罩对光阻层进行曝光，经过显影液显影处理后，蚀刻对应第一电极220的n型掺杂非硅层520、非晶硅层510以及第一绝缘层400，以形成贯穿第一绝缘层400、n型掺杂非晶硅层520以及非晶硅层510的第一过孔280。采用溅射沉积于第一过孔280中以及n型掺杂非晶硅层520上形成整面的第二导电层600。在第二导电层600上形成整面的光阻层，采用半色调灰阶掩膜板对光阻层进行曝光，以定义光阻完全去除区、光阻半保留区以及光阻完全保留区，显影液处理光阻完全去除区的光阻后，蚀刻去除光阻完全去除区的第二导电层600、非晶硅层510以及n型掺杂非晶硅层520，得第二电极230以及第一绑定电极260，第二电极230通过第一过孔280与第一电极220电性连接；显影液处理光阻半保留区的光阻后，蚀刻去除光阻半保留区的n型掺杂非晶硅层520以及第二导电层600，得源漏电极240以及有源层250，源漏电极240对应有源层250设置且与有源层250电性连接，去除光阻完全保留区的光阻层。\n\n[0063]步骤23，形成第三电极270，第三电极270与第二电极230电连接。\n\n[0064]可选的，如图11-13所示，步骤23中，形成覆盖第一绑定电极260、第二电极230、源漏电极240、有源层250以及第一绝缘层400的第二绝缘层700，形成贯穿第二绝缘层700并连通至第二电极230的第二过孔290，形成贯穿第二绝缘层700并连通至第一绑定电极260的第三过孔295。在第二过孔290中以及第二绝缘层700上形成第三导电层800，对第三导电层800图案化处理，得到第三电极270，第三电极270通过第二过孔290与第二电极230电连接。\n\n[0065]具体的，在第二过孔290中、第三过孔295中以及第二绝缘层700上形成整面的第三导电层800，在第三导电层800上形成整面的光阻层，利用光罩对光阻层进行曝光以及显影液显影后，蚀刻第三导电层800，去除剩余的光阻层800，使第一绑定电极260暴露，得第三电极270。第三导电层800的制备材料为氧化铟锡。第三电极270通过第二过孔290与第二电极230电连接。\n\n[0066]应当理解的是，本方法中，步骤10中提供的基板100可以是已经包含了设置在显示区110的驱动电路200，而无需包括专门在基板100形成驱动电路200的工艺步骤。\n\n[0067]步骤30，如图14所示，在基板100一侧的表面上罩上面罩900，面罩900覆盖基板100一侧的表面的多个显示区110和部分非显示区120，以使多个标记区130和多条切割区150裸露在外，采用亲水性材料在多个标记区130和多条切割区150上形成一层薄膜。\n\n[0068]步骤30中，面罩900用于遮挡基板100一侧除去多个标记区130和多条切割区150的其他区域，并且露出多个标记区130和多条切割区150，便于亲水性材料在多个标记区130和多条切割区150上形成薄膜，同时亲水性材料不会涂布到其他区域影响其他区域上形成钝化涂层。\n\n[0069]一些实施例中，亲水性材料为聚甲基丙烯酸甲酯。\n\n[0070]一些实施例中，采用蒸汽喷雾方式或喷淋方式将亲水性材料在多个标记区130和多条切割区150上形成薄膜。\n\n[0071]步骤40，移开面罩900，在基板100一侧的整个表面上涂布疏水性的材料形成钝化涂层。\n\n[0072]步骤40中，移开面罩900后，在基板100一侧的整个表面上涂布疏水性的钝化涂层时，由于基板100一侧的多个标记区130和多条切割区150上形成有亲水性的薄膜，疏水性的钝化涂层在多个标记区130和多条切割区150上无法成膜，而将多个标记区130上的金属标记物140和多条切割区150露出，基板100一侧的表面上除去多个标记区130和多条切割区150的其他区域可以形成钝化涂层。\n\n[0073]步骤50，将基板100沿着多条切割区150切割成单片的背光板。\n\n[0074]步骤50中，由于疏水性的钝化涂层在切割区150上无法成膜，而将多条切割区150露出，能够避免切割到钝化涂层，不会出现背光板边缘的钝化涂层出线龟裂脱落的状况。应当理解的是，如果基板100一侧的表面仅设置一个显示区110时，无需对基板100进行切割。\n\n[0075]一些实施例中，疏水性的钝化涂层的材料为WPR；移开面罩900，在基板100一侧的表面上涂布疏水性的材料形成钝化涂层的步骤与将基板100沿着多条切割区150切割形成单片的背光板的步骤之间还包括如下步骤：对基板100依次进行第一次烘烤、曝光、显影和第二次烘烤处理。\n\n[0076]WPR为来自捷时雅迈科公司(JSR Micro，Inc.)(加利福亚州桑尼维尔)的商标为WPR的正型色调或负型色调光致抗蚀剂材料。WPR系列光致抗蚀剂材料为具有低固化温度的正型或负型光致抗蚀剂且能够以约5微米到约20微米的厚度形成。WPR材料的RGB负型色阻工艺，可以通过涂布/曝光/显影形成图形，能很好与TFT-LCD(薄膜晶体管液晶显示器)厂很好衔接，无需在涂布钝化涂层工艺之前将玻璃基板切成小片进行作业，能够极大提升生产效率。\n\n[0077]优选的，钝化涂层的厚度小于10微米。较小厚度的钝化涂层可减少成本，同时具有80％以上较高的反射率，能够提高背光板的光学品味。\n\n[0078]本申请实施例的Mini LED背光板的制作方法中，通过在基板100一侧的表面上罩上面罩900来覆盖基板100一侧的表面上除去多个标记区130的其他区域，采用亲水性材料在裸露在外的多个标记区130上形成一层薄膜，移开面罩900并在基板100一侧的整个表面上涂布疏水性的钝化涂层，由于多个标记区130上形成的亲水性薄膜可使疏水性的钝化涂层在涂布时难以成膜而将金属标记物140露出，从而可以对曝光机准确定位，能够形成设定图案的钝化涂层；同时，基板100的表面除去多个标记区130的其他区域均可涂布钝化涂层，能够实现基板100最大利用率，降低产品成本。\n\n[0079]请参阅图15，图15为本申请实施例提供的另一种Mini LED背光板的制作方法的流程框图。本申请实施例中，Mini LED背光板的制作方法包括如下步骤：\n\n[0080]步骤10’，结合图2所示，提供基板100，基板100一侧的表面上划分有多个显示区110，基板110一侧的表面上除去多个显示区110的其他区域为非显示区120，非显示区120内划分有将任意相邻两个显示区110分隔开的多条切割区150。\n\n[0081]步骤20’，结合图14所示，在基板100一侧的表面上罩上面罩900，面罩900覆盖基板100一侧的表面的多个显示区110和部分非显示区120，以使多条切割区150裸露在外，采用亲水性材料在多条切割区150上形成一层薄膜。\n\n[0082]步骤30’，移开面罩900，在基板100一侧的整个表面上涂布疏水性的材料形成钝化涂层。\n\n[0083]步骤40’，将基板100沿着多条切割区150切割形成单片的背光板。\n\n[0084]本申请实施例的Mini LED背光板的制作方法中，由于疏水性的钝化涂层在切割区150上无法成膜，而将多条切割区150露出，能够避免将基板100切割形成单片的背光板时切割到钝化涂层，不会出现背光板边缘的钝化涂层出线龟裂脱落的状况。\n\n[0085]一些实施例中，亲水性材料为聚甲基丙烯酸甲酯。\n\n[0086]一些实施例中，采用蒸汽喷雾方式或喷淋方式将亲水性材料在多条切割区150上形成薄膜。\n\n[0087]一些实施例中，步骤10’中，非显示区120内还划分有多个标记区130，多个标记区130分别与多个显示区110一一对应设置，每个标记区130上设置有金属标记物140；步骤20’中，面罩覆盖基板100一侧的表面的多个显示区110和部分非显示区120，以使多个标记区130和多条切割区150裸露在外，采用亲水性材料在多个标记区130和多条切割区150上形成一层薄膜。\n\n[0088]一些实施例中，疏水性的钝化涂层的材料为WPR；步骤30’与步骤40’之间还包括如下步骤：对基板100依次进行第一次烘烤、曝光、显影和第二次烘烤处理。\n\n[0089]本申请实施例还提供一种MINILED背光板，采用如上所述制作方法制成。\n\n[0090]以上对本申请实施例提供的Mini LED背光板的制作方法及Mini LED背光板进行了详细介绍。本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，特别涉及一种Mini LED背光板的制作方法及Mini LED背光板。\n\n背景技术\n\n[0002]在Mini LED背光板制作中为保证薄膜晶体管器件工作稳定性，而且尽可能增大光利用率和光学品味，有一道钝化涂层制程，钝化涂层膜厚80％。为使钝化涂层能够在设定的位置形成图案，需要在基板的表面上设置金属标记物进行曝光机对位，曝光机在利用设置的金属标记物进行对位时，光源穿透钝化涂层，在金属标记物上进行反射，进而输入具有检测反射光功能的CCD(电荷耦合器件)镜头，从而完成钝化涂层在曝光机里的对位过程，从而使得钝化涂层可以按照设定的位置及尺寸，形成相应的图案。现有一种钝化涂层的形成方式是将基板的表面涂满钝化涂层，对于反射率较高的钝化涂层材料来说，光源经过钝化涂层后大部分光都被直接反射出去，而很难到达金属标记物表面，无法对曝光机进行准确对位，导致钝化涂层无法形成设定的图案；另外，在钝化涂层制程完成后续进行切割成相应的尺寸时，由于钝化涂层膜厚较高，且材料固有特性，在切割时容易出现切割区域的钝化涂层呈锯齿状，严重时会导致出现边缘龟裂脱落状况。现有另一种钝化涂层的形成方式是，在基板的表面上设置金属标记物的整个边缘上不涂布钝化涂层，便于CCD镜头读取金属标记物的位置以对曝光机准确定位，但是浪费了基板边缘区域，无法实现基板最大利用率，会导致产品成本急剧升高。\n\n发明内容\n\n[0003]本申请实施例提供一种Mini LED背光板的制作方法及Mini LED背光板，能够形成设定图案的钝化涂层，同时实现基板最大利用率，降低产品成本。\n\n[0004]本申请实施例提供一种Mini LED背光板的制作方法，包括如下步骤：\n\n[0005]提供基板，所述基板一侧的表面上划分有至少一个显示区，所述基板一侧的表面上除去所述至少一个显示区的其他区域为非显示区，所述非显示区内划分有至少一个标记区，所述标记区上设置有金属标记物；\n\n[0006]在所述基板一侧的表面上罩上面罩，所述面罩覆盖所述基板一侧的表面的所述至少一个显示区和部分所述非显示区，以使所述至少一个标记区裸露在外，采用亲水性材料在所述至少一个标记区上形成一层薄膜；\n\n[0007]移开所述面罩，在所述基板一侧的整个表面上涂布疏水性的材料形成钝化涂层。\n\n[0008]进一步地，提供基板，所述基板一侧的表面上划分有至少一个显示区，所述基板一侧的表面上除去所述至少一个显示区的其他区域为非显示区，所述非显示区内划分有至少一个标记区，所述标记区上设置有金属标记物的步骤包括：\n\n[0009]所述基板一侧的表面上划分有呈矩形阵列排布的多个显示区，所述非显示区内划分有多个标记区，所述多个标记区分别与所述多个显示区一一对应设置，所述非显示区内还划分有将任意相邻两个所述显示区分隔开的多条切割区；\n\n[0010]在所述基板一侧的表面上罩上面罩，所述面罩覆盖所述基板一侧的表面的所述至少一个显示区和部分所述非显示区，以使所述至少一个标记区裸露在外，采用亲水性材料在所述至少一个标记区上形成一层薄膜的步骤包括：\n\n[0011]所述面罩覆盖所述基板一侧的表面的所述多个显示区和部分所述非显示区，所述多个标记区和多条切割区裸露在外，采用亲水性材料在所述多个标记区和多条切割区上形成一层薄膜；\n\n[0012]移开所述面罩，在所述基板一侧的表面上涂布疏水性的材料形成钝化涂层的步骤之后还包括如下步骤：\n\n[0013]将所述基板沿着所述多条切割区切割形成单片的背光板。\n\n[0014]进一步地，所述钝化涂层的材料为WPR；\n\n[0015]移开所述面罩，在所述基板一侧的表面上涂布疏水性的材料形成钝化涂层的步骤与将所述基板沿着所述多条切割区切割形成单片的背光板的步骤之间还包括如下步骤：\n\n[0016]对所述基板依次进行第一次烘烤、曝光、显影和第二次烘烤处理。\n\n[0017]进一步地，所述钝化涂层的厚度小于10微米。\n\n[0018]进一步地，所述亲水性材料为聚甲基丙烯酸甲酯。\n\n[0019]进一步地，采用蒸汽喷雾方式或喷淋方式将所述亲水性材料在所述多个标记区和多条切割区上形成所述薄膜。\n\n[0020]本申请实施例还提供一种Mini LED背光板的制作方法，包括如下步骤：\n\n[0021]提供基板，所述基板一侧的表面上划分有多个显示区，所述基板一侧的表面上除去所述多个显示区的其他区域为非显示区，所述非显示区内划分有将任意相邻两个所述显示区分隔开的多条切割区；\n\n[0022]在所述基板一侧的表面上罩上面罩，所述面罩覆盖所述基板一侧的表面的所述多个显示区和部分所述非显示区，以使所述多条切割区裸露在外，采用亲水性材料在所述多条切割区上形成一层薄膜；\n\n[0023]移开所述面罩，在所述基板一侧的整个表面上涂布疏水性的材料形成钝化涂层；\n\n[0024]将所述基板沿着所述多条切割区切割形成单片的背光板。\n\n[0025]进一步地，提供基板，所述基板一侧的表面上划分有多个显示区，所述基板一侧的表面上除去所述多个显示区的其他区域为非显示区，所述非显示区内划分有将任意相邻两个所述显示区分隔开的多条切割区的步骤包括：\n\n[0026]所述非显示区内还划分有多个标记区，所述多个标记区分别与所述多个显示区一一对应设置，所述标记区上设置有金属标记物；\n\n[0027]在所述基板一侧的表面上罩上面罩，所述面罩覆盖所述基板一侧的表面的所述多个显示区和部分所述非显示区，以使所述多条切割区裸露在外，采用亲水性材料在所述多条切割区上形成一层薄膜的步骤包括：\n\n[0028]所述面罩覆盖所述基板一侧的表面的所述多个显示区和部分所述非显示区，以使所述多个标记区和多条切割区裸露在外，采用亲水性材料在所述多个标记区和多条切割区上形成一层薄膜。\n\n[0029]进一步地，所述钝化涂层的材料为WPR；\n\n[0030]移开所述面罩，在所述基板一侧的表面上涂布疏水性的材料形成钝化涂层的步骤与将所述基板沿着所述多条切割区切割形成单片的背光板的步骤之间还包括如下步骤：\n\n[0031]对所述基板依次进行第一次烘烤、曝光、显影和第二次烘烤处理。\n\n[0032]本申请实施例还提供一种MINILED背光板，采用如上所述制作方法制成。\n\n[0033]本申请实施例的Mini LED背光板的制作方法中，通过在基板一侧的表面上罩上面罩来覆盖基板一侧的表面上除去至少一个标记区的其他区域，采用亲水性材料在裸露在外的至少一个标记区上形成一层薄膜，移开面罩并在基板一侧的整个表面上涂布疏水性的钝化涂层，由于至少一个标记区上形成的亲水性薄膜可使疏水性的钝化涂层在涂布时难以成膜而将金属标记物露出，从而可以对曝光机准确定位，能够形成设定图案的钝化涂层；同时，基板的表面除去至少一个标记区的其他区域均可涂布钝化涂层，能够实现基板最大利用率，降低产品成本。\n\n附图说明\n\n[0034]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0035]图1为本申请实施例提供的一种Mini LED背光板的制作方法的流程框图。\n\n[0036]图2为本申请实施例提供的第一种工艺流程图。\n\n[0037]图3为本申请实施例提供的Mini LED背光板的结构示意图。\n\n[0038]图4为本申请实施例提供的形成驱动电路结构的流程框图。\n\n[0039]图5为本申请实施例提供的第二种工艺流程图。\n\n[0040]图6为本申请实施例提供的第三种工艺流程图。\n\n[0041]图7为本申请实施例提供的第四种工艺流程图。\n\n[0042]图8为本申请实施例提供的第五种工艺流程图。\n\n[0043]图9为本申请实施例提供的第六种工艺流程图。\n\n[0044]图10为本申请实施例提供的第七种工艺流程图。\n\n[0045]图11为本申请实施例提供的第八种工艺流程图。\n\n[0046]图12为本申请实施例提供的第九种工艺流程图。\n\n[0047]图13为本申请实施例提供的第十种工艺流程图。\n\n[0048]图14为本申请实施例提供的第十一种工艺流程图。\n\n[0049]图15为本申请实施例提供的另一种Mini LED背光板的制作方法的流程框图。\n\n具体实施方式\n\n[0050]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0051]请参阅图1-14，图1为本申请实施例提供的一种Mini LED背光板的制作方法的流程框图，图2为本申请实施例提供的第一种工艺流程图，图3为本申请实施例提供的MiniLED背光板的结构示意图，图4为本申请实施例提供的形成驱动电路结构的流程框图，图5为本申请实施例提供的第二种工艺流程图，图6为本申请实施例提供的第三种工艺流程图，图7为本申请实施例提供的第四种工艺流程图，图8为本申请实施例提供的第五种工艺流程图，图9为本申请实施例提供的第六种工艺流程图，图10为本申请实施例提供的第七种工艺流程图，图11为本申请实施例提供的第八种工艺流程图，图12为本申请实施例提供的第九种工艺流程图，图13为本申请实施例提供的第十种工艺流程图，图14为本申请实施例提供的第十一种工艺流程图。本申请实施例中，Mini LED背光板的制作方法包括如下步骤：\n\n[0052]步骤10，如图2所示，提供基板100，基板100一侧的表面上划分有呈矩形阵列排布的多个显示区110，基板100一侧的表面上除去多个显示区110的其他区域为非显示区120，非显示区120内划分有多个标记区130，多个标记区130分别与多个显示区110一一对应设置，每个标记区130上设置有金属标记物140，非显示区120内还划分有将任意相邻两个显示区110分隔开的多条切割区150。\n\n[0053]步骤10中，基板100可以为玻璃基板，应当理解的是根据应用需求，基板100也可以用其他合适的刚性材质或柔性材质制作。显示区110用于设置驱动电路和发光器件以提供显示功能，显示区110优选地设置为呈矩形阵列排布的多个显示区110，从而便于在一块基板100上加工制作多个背光板以提高生产效率。多个标记区130分别与多个显示区110一一对应设置，每个标记区130上设置有金属标记物140，通过金属标记物140来对曝光机准确定位，从而形成设定图案的钝化涂层。背光板制作完成后，可以沿着多条切割区150切割成多个小片。应当理解的是，基板100上也可以仅设置一个显示区110和一个与之相对应的标记区130，此时背光板制备完成后无需切割成小片，因此基板100的一侧表面上不用划分切割区150。\n\n[0054]步骤20，如图3所示，在基板100的显示区上形成驱动电路200结构。\n\n[0055]驱动电路200包括栅极210、第一电极220、第二电极230、第三电极270、源漏电极240、有源层250以及第一绑定电极260，栅极210与第一电极220同层设置，栅极210、源漏电极240和有源层250构成薄膜晶体管，第一电极220、第二电极230和第三电极270位于薄膜晶体管的一侧，第一绑定电极260位于薄膜晶体管的另一侧，第二电极230与第一电极220电连接，第三电极270与第二电极230电连接，第三电极270用于与覆晶薄膜电连接，第一绑定电极260用于与发光二极管电连接。\n\n[0056]一些实施例中，如图4所示，在基板100的显示区上形成驱动电路200结构的步骤包括如下步骤：\n\n[0057]步骤21，在基板100上形成栅极210以及第一电极220。\n\n[0058]可选的，如图5、6所示，步骤21中，在基板100上形成第一导电层300，对第一导电层300图案化处理，得到同层设置的栅极210以及第一电极220。\n\n[0059]具体的，在基板100上形成整面的第一导电层300，形成覆盖第一导电层300的整面光阻层，利用光罩对光阻层进行曝光，且利用显影液对光阻层进行显影处理，蚀刻未被光阻层覆盖的第一导电层300，去除剩余的光阻层，得栅极210以及第一电极220。\n\n[0060]步骤22，形成第二电极230、源漏电极240、有源层250以及第一绑定电极260，第二电极230与第一电极220电连接。\n\n[0061]可选的，如图7-10所示，步骤22中，形成覆盖栅极210、第一电极220以及基板100的第一绝缘层400，在第一绝缘层400远离基板100的一侧形成半导体层500，形成贯穿第一绝缘层400以及半导体层500并连通至第一电极220的第一过孔280；在第一过孔280中以及半导体层500上形成第二导电层600，对第二导电层600以及半导体层500图案化处理，得到第二电极230、源漏电极240、有源层250以及第一绑定电极260，第二电极230通过第一过孔280与第一电极220电连接。\n\n[0062]具体的，采用化学气相沉积形成覆盖栅极210、第一电极220以及基板100的第一绝缘层400，第一绝缘层400为栅极绝缘层，再依次形成覆盖第一绝缘层400的非晶硅层510以及n型掺杂非晶硅层520。在n型掺杂非晶硅层520上形成整面的光阻层，利用光罩对光阻层进行曝光，经过显影液显影处理后，蚀刻对应第一电极220的n型掺杂非硅层520、非晶硅层510以及第一绝缘层400，以形成贯穿第一绝缘层400、n型掺杂非晶硅层520以及非晶硅层510的第一过孔280。采用溅射沉积于第一过孔280中以及n型掺杂非晶硅层520上形成整面的第二导电层600。在第二导电层600上形成整面的光阻层，采用半色调灰阶掩膜板对光阻层进行曝光，以定义光阻完全去除区、光阻半保留区以及光阻完全保留区，显影液处理光阻完全去除区的光阻后，蚀刻去除光阻完全去除区的第二导电层600、非晶硅层510以及n型掺杂非晶硅层520，得第二电极230以及第一绑定电极260，第二电极230通过第一过孔280与第一电极220电性连接；显影液处理光阻半保留区的光阻后，蚀刻去除光阻半保留区的n型掺杂非晶硅层520以及第二导电层600，得源漏电极240以及有源层250，源漏电极240对应有源层250设置且与有源层250电性连接，去除光阻完全保留区的光阻层。\n\n[0063]步骤23，形成第三电极270，第三电极270与第二电极230电连接。\n\n[0064]可选的，如图11-13所示，步骤23中，形成覆盖第一绑定电极260、第二电极230、源漏电极240、有源层250以及第一绝缘层400的第二绝缘层700，形成贯穿第二绝缘层700并连通至第二电极230的第二过孔290，形成贯穿第二绝缘层700并连通至第一绑定电极260的第三过孔295。在第二过孔290中以及第二绝缘层700上形成第三导电层800，对第三导电层800图案化处理，得到第三电极270，第三电极270通过第二过孔290与第二电极230电连接。\n\n[0065]具体的，在第二过孔290中、第三过孔295中以及第二绝缘层700上形成整面的第三导电层800，在第三导电层800上形成整面的光阻层，利用光罩对光阻层进行曝光以及显影液显影后，蚀刻第三导电层800，去除剩余的光阻层800，使第一绑定电极260暴露，得第三电极270。第三导电层800的制备材料为氧化铟锡。第三电极270通过第二过孔290与第二电极230电连接。\n\n[0066]应当理解的是，本方法中，步骤10中提供的基板100可以是已经包含了设置在显示区110的驱动电路200，而无需包括专门在基板100形成驱动电路200的工艺步骤。\n\n[0067]步骤30，如图14所示，在基板100一侧的表面上罩上面罩900，面罩900覆盖基板100一侧的表面的多个显示区110和部分非显示区120，以使多个标记区130和多条切割区150裸露在外，采用亲水性材料在多个标记区130和多条切割区150上形成一层薄膜。\n\n[0068]步骤30中，面罩900用于遮挡基板100一侧除去多个标记区130和多条切割区150的其他区域，并且露出多个标记区130和多条切割区150，便于亲水性材料在多个标记区130和多条切割区150上形成薄膜，同时亲水性材料不会涂布到其他区域影响其他区域上形成钝化涂层。\n\n[0069]一些实施例中，亲水性材料为聚甲基丙烯酸甲酯。\n\n[0070]一些实施例中，采用蒸汽喷雾方式或喷淋方式将亲水性材料在多个标记区130和多条切割区150上形成薄膜。\n\n[0071]步骤40，移开面罩900，在基板100一侧的整个表面上涂布疏水性的材料形成钝化涂层。\n\n[0072]步骤40中，移开面罩900后，在基板100一侧的整个表面上涂布疏水性的钝化涂层时，由于基板100一侧的多个标记区130和多条切割区150上形成有亲水性的薄膜，疏水性的钝化涂层在多个标记区130和多条切割区150上无法成膜，而将多个标记区130上的金属标记物140和多条切割区150露出，基板100一侧的表面上除去多个标记区130和多条切割区150的其他区域可以形成钝化涂层。\n\n[0073]步骤50，将基板100沿着多条切割区150切割成单片的背光板。\n\n[0074]步骤50中，由于疏水性的钝化涂层在切割区150上无法成膜，而将多条切割区150露出，能够避免切割到钝化涂层，不会出现背光板边缘的钝化涂层出线龟裂脱落的状况。应当理解的是，如果基板100一侧的表面仅设置一个显示区110时，无需对基板100进行切割。\n\n[0075]一些实施例中，疏水性的钝化涂层的材料为WPR；移开面罩900，在基板100一侧的表面上涂布疏水性的材料形成钝化涂层的步骤与将基板100沿着多条切割区150切割形成单片的背光板的步骤之间还包括如下步骤：对基板100依次进行第一次烘烤、曝光、显影和第二次烘烤处理。\n\n[0076]WPR为来自捷时雅迈科公司(JSR Micro，Inc.)(加利福亚州桑尼维尔)的商标为WPR的正型色调或负型色调光致抗蚀剂材料。WPR系列光致抗蚀剂材料为具有低固化温度的正型或负型光致抗蚀剂且能够以约5微米到约20微米的厚度形成。WPR材料的RGB负型色阻工艺，可以通过涂布/曝光/显影形成图形，能很好与TFT-LCD(薄膜晶体管液晶显示器)厂很好衔接，无需在涂布钝化涂层工艺之前将玻璃基板切成小片进行作业，能够极大提升生产效率。\n\n[0077]优选的，钝化涂层的厚度小于10微米。较小厚度的钝化涂层可减少成本，同时具有80％以上较高的反射率，能够提高背光板的光学品味。\n\n[0078]本申请实施例的Mini LED背光板的制作方法中，通过在基板100一侧的表面上罩上面罩900来覆盖基板100一侧的表面上除去多个标记区130的其他区域，采用亲水性材料在裸露在外的多个标记区130上形成一层薄膜，移开面罩900并在基板100一侧的整个表面上涂布疏水性的钝化涂层，由于多个标记区130上形成的亲水性薄膜可使疏水性的钝化涂层在涂布时难以成膜而将金属标记物140露出，从而可以对曝光机准确定位，能够形成设定图案的钝化涂层；同时，基板100的表面除去多个标记区130的其他区域均可涂布钝化涂层，能够实现基板100最大利用率，降低产品成本。\n\n[0079]请参阅图15，图15为本申请实施例提供的另一种Mini LED背光板的制作方法的流程框图。本申请实施例中，Mini LED背光板的制作方法包括如下步骤：\n\n[0080]步骤10’，结合图2所示，提供基板100，基板100一侧的表面上划分有多个显示区110，基板110一侧的表面上除去多个显示区110的其他区域为非显示区120，非显示区120内划分有将任意相邻两个显示区110分隔开的多条切割区150。\n\n[0081]步骤20’，结合图14所示，在基板100一侧的表面上罩上面罩900，面罩900覆盖基板100一侧的表面的多个显示区110和部分非显示区120，以使多条切割区150裸露在外，采用亲水性材料在多条切割区150上形成一层薄膜。\n\n[0082]步骤30’，移开面罩900，在基板100一侧的整个表面上涂布疏水性的材料形成钝化涂层。\n\n[0083]步骤40’，将基板100沿着多条切割区150切割形成单片的背光板。\n\n[0084]本申请实施例的Mini LED背光板的制作方法中，由于疏水性的钝化涂层在切割区150上无法成膜，而将多条切割区150露出，能够避免将基板100切割形成单片的背光板时切割到钝化涂层，不会出现背光板边缘的钝化涂层出线龟裂脱落的状况。\n\n[0085]一些实施例中，亲水性材料为聚甲基丙烯酸甲酯。\n\n[0086]一些实施例中，采用蒸汽喷雾方式或喷淋方式将亲水性材料在多条切割区150上形成薄膜。\n\n[0087]一些实施例中，步骤10’中，非显示区120内还划分有多个标记区130，多个标记区130分别与多个显示区110一一对应设置，每个标记区130上设置有金属标记物140；步骤20’中，面罩覆盖基板100一侧的表面的多个显示区110和部分非显示区120，以使多个标记区130和多条切割区150裸露在外，采用亲水性材料在多个标记区130和多条切割区150上形成一层薄膜。\n\n[0088]一些实施例中，疏水性的钝化涂层的材料为WPR；步骤30’与步骤40’之间还包括如下步骤：对基板100依次进行第一次烘烤、曝光、显影和第二次烘烤处理。\n\n[0089]本申请实施例还提供一种MINILED背光板，采用如上所述制作方法制成。\n\n[0090]以上对本申请实施例提供的Mini LED背光板的制作方法及Mini LED背光板进行了详细介绍。本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10919, 23973, '技术领域\n\n[0001]本申请涉及ACF贴合的技术领域，具体涉及一种ACF的贴合方法。\n\n背景技术\n\n[0002]近年来，显示行业得到了快速的发展，尤其是我国的显示行业，发生了天翻地覆的变化。通过技术、人才、先进设备的引进、以及核心技术的创新，我国已成为世界显示器制造大国，显示器水平达到世界领先水平。不仅结束了我国少屏的窘境，还引领显示界的潮流。\n\n[0003]显示行业的竞争变得越来越激烈，更新周期不断缩短，以液晶显示器(LiquidCrystal Display，缩写LCD)与有机发光二极管(Organic Light-Emitting Diode，缩写OLED)的竞争尤为激烈。随着OLED工艺、材料的成熟以及良率的提升，LCD渐渐失去了在小尺寸的市场优势，特别是在手机市场，OLED已渐渐取代LCD的地位。近年来也兴起了很多新型的显示技术，例如QLED显示、电子墨水屏(E-ink)、柔性LCD、PE显示、mini-LED、micro-LED等等。这些新技术因还存在成本、寿命、可靠性等一些问题，还具备不了像LCD、OLED的量产性。micro-LED因具有色域广、对比度高、响应速度快、分辨率高、寿命长等优点，被很多企业大力推广，同时被视为下一代最具有潜力的新型显示技术。\n\n[0004]micro-LED目前已有多种样品(demo)面世，但仍然存在很多问题需要克服。例如后段制作困难、亮度不均匀、可靠性、转移良率低、薄膜晶体管(Thin Film Transistor，缩写TFT)均匀性差、串色、混色、成本高等问题。巨量转移技术及检测修复技术是micro-LED显示技术最关键的技术。目前各大厂家都在想办法解决这两个问题。巨量转移技术又分为多种，例如激光转移、stamp转移、静电力转移、流体转移、滚印等。本申请针对stamp转移中ACF贴合方法提出发明方案。如图1、图2所示，常规的stamp转移，通常是采用整面的ACF贴附在驱动背板上，通过加热加压的方式与micro-LED芯片进行键合连接，但因micro-LED显示技术对ACF的要求很高且特殊，加热加压后，整面ACF中没有利用到的ACF就浪费了，因此ACF整面贴合不仅浪费材料增加成本，而且由于ACF是异方型导电胶膜，还容易导致micro-LED面板短路，影响良率。对于micro-LED无缝拼接产品，因整面的ACF，还需要采用激光设备对ACF单元的四边进行精密切割，不仅增加制程时间(tact time)而且增加成本。\n\n发明内容\n\n[0005]本申请提供一种ACF的贴合方法，可以节约ACF材料、提高生产良率、降低生产成本。\n\n[0006]本申请提供一种ACF的贴合方法，\n\n[0007]提供微型发光二极管基板，所述微型发光二级管基板上阵列设有多个焊盘；\n\n[0008]获取ACF图案，所述ACF图案中阵列设置多个ACF单元；\n\n[0009]将所述ACF图案贴附至所述微型发光二级管基板上，其中，多个所述ACF单元与多个所述焊盘一一对应，且每个所述ACF单元贴附在相应的所述焊盘上。\n\n[0010]优选地，所述获取ACF图案的步骤包括：\n\n[0011]提供ACF；\n\n[0012]提供冲切及吸附一体设备对所述ACF进行冲切获得所述ACF图案，其中，所述冲切及吸附一体设备包括刀头及吸嘴系统，所述刀头及吸嘴系统阵列设有多个冲切刀，多个所述冲切刀与多个所述ACF单元一一对应。\n\n[0013]优选地，所述将所述ACF图案贴附至所述微型发光二级管基板上的步骤包括：\n\n[0014]提供转印板；\n\n[0015]将所述ACF图案吸附在所述刀头及吸嘴系统上；\n\n[0016]所述冲切及吸附一体设备将所述ACF图案转移至所述转印板；\n\n[0017]将所述转印板具有所述ACF图案的一面与所述微型发光二极管基板贴合。\n\n[0018]优选地，所述将所述转印板具有所述ACF图案的一面与所述微型发光二极管基板贴合前的步骤包括：\n\n[0019]将多个所述ACF单元与多个所述焊盘一一对应，且每个所述ACF单元与相对应的所述焊盘在所述微型发光二极管基板上的正投影相互重合。\n\n[0020]优选地，所述将多个所述ACF单元与多个所述焊盘一一对应的步骤包括：\n\n[0021]在所述转印板上设置多个第一对位标记；\n\n[0022]在所述微型发光二极管基板上设置多个第二对位标记，多个所述第二对位标记与多个所述第一对位标记一一对应；\n\n[0023]将每个所述第一对位标记与相应的所述第二对位标记对齐。\n\n[0024]优选地，移动所述刀头及吸嘴系统，使得某个冲切刀对准该冲切刀内的ACF单元贴附在转印板上的位置。\n\n[0025]优选地，所述冲切刀具有中空空腔，且冲切刀的刀刃呈闭环。\n\n[0026]优选地，所述刀头及吸嘴系统包括吸盘和负压管；吸盘设置在负压管的端部，吸盘位于冲切刀的中空空腔内，吸盘具有若干通孔。\n\n[0027]优选地，所述冲切及吸附一体设备包括驱使刀头及吸嘴系统移动的三维移动系统，刀头及吸嘴系统安装在三维移动系统上。\n\n[0028]优选地，所述将所述转印板具有所述ACF图案的一面与所述微型发光二极管基板贴合的步骤包括：\n\n[0029]提供转印设备，所述转印设备驱动所述转印板具有所述ACF图案的一面与所述微型发光二极管基板贴合，其中，所述转印设备包括用于驱动所述转印板直线运动的气缸，所述转印板通过轴承座安装在气缸上。\n\n[0030]本申请中通过一种ACF的贴合方法，无需整面贴合ACF，而是对ACF进行冲切，节约了ACF材料、同时，相比现有技术中先将整面贴合ACF贴附至微型发光二级管基板上再进行激光切割形成ACF图案，本申请通过先获取ACF图案，然后再将所述ACF图案贴附至所述微型发光二级管基板上，省去了激光精密切割的工序，不需要采用激光设备对ACF单元进行精密切割，从而避免激光精密切割工序对ACF或微型发光二级管基板的损害，且能够避免激光精密切割工序过程中切割不完整或切割过程中产生导电性碎片而导致micro-LED基板短路，提高了生产节拍、生产良率、降低了生产成本，为micro-LED显示技术的量产提供技术支持。\n\n附图说明\n\n[0031]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0032]图1是本申请现有技术中提供的微型发光二极管的结构示意图；\n\n[0033]图2是本申请现有技术中ACF整面贴合微型发光二极管基板的结构示意图；\n\n[0034]图3是本申请实施例中提供的刀头及吸嘴系统冲切ACF的结构示意图；\n\n[0035]图4是本申请实施例中提供的ACF单元转移至转印板的结构示意图；\n\n[0036]图5是本申请实施例中提供的ACF单元转移至微型发光二极管基板的结构示意图；\n\n[0037]图6是本申请实施例中提供的刀头及吸嘴系统的结构示意图；\n\n[0038]图7是本申请实施例中提供的吸附及翻转系统的结构示意图；\n\n[0039]图8是本申请一种ACF的贴合方法的流程图；\n\n[0040]其中，附图标记如下：1微型发光二极管基板，2焊盘，3ACF，4ACF单元，5刀头及吸嘴系统，6转印板，7第一对位标记，8冲切刀，9吸盘，10负压管，11旋转杆，12连接杆，13吸附盘，14轴承座，15第二对位标记。\n\n具体实施方式\n\n[0041]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0042]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0043]在本申请中，“示例性”一词用来表示“用作例子、例证或说明”。本申请中被描述为“示例性”的任何实施例不一定被解释为比其它实施例更优选或更具优势。为了使本领域任何技术人员能够实现和使用本发明，给出了以下描述。在以下描述中，为了解释的目的而列出了细节。应当明白的是，本领域普通技术人员可以认识到，在不使用这些特定细节的情况下也可以实现本发明。在其它实例中，不会对公知的结构和过程进行详细阐述，以避免不必要的细节使本发明的描述变得晦涩。因此，本发明并非旨在限于所示的实施例，而是与符合本申请所公开的原理和特征的最广范围相一致。\n\n[0044]本申请实施例提供一种ACF的贴合方法，以下分别进行详细说明。\n\n[0045]结合图8所示，一种ACF的贴合方法，S1：提供微型发光二极管基板1，所述微型发光二级管基板1上阵列设有多个焊盘2。S2：获取ACF图案，所述ACF图案中阵列设置多个ACF单元4。S3：将所述ACF图案贴附至所述微型发光二级管基板1上，其中，多个所述ACF单元4与多个所述焊盘2一一对应，且每个所述ACF单元4贴附在相应的所述焊盘2上。\n\n[0046]所述获取ACF图案的步骤包括：提供ACF3；提供冲切及吸附一体设备对所述ACF3进行冲切获得所述ACF图案。\n\n[0047]请参阅图3至图5，所述冲切及吸附一体设备包括刀头及吸嘴系统5，所述刀头及吸嘴系统5阵列设有多个冲切刀8，多个所述冲切刀8与多个所述ACF单元4一一对应。根据微型发光二极管基板1(micro-LED)的像素间距(pixel pitch)采用冲切及吸附一体设备对ACF3按照预定的规格进行冲切，冲切及吸附一体设备将冲切出来的ACF单元4(ACF pattern)吸附在刀头及吸嘴系统5上，冲切出来的每个所述ACF单元4被吸附至相应的每个所述冲切刀8上，刀头及吸嘴系统5从上往下运动对ACF3进行冲切，冲切出阵列的多个ACF单元4，一个冲切刀8冲切出一个ACF单元4，阵列的多个冲切刀8冲切出阵列的多个ACF单元4，所有的ACF单元4构成了ACF图案，从而，所述刀头及吸嘴系统5的所有冲切刀8获取的ACF单元4构成ACF图案。\n\n[0048]所述将所述ACF图案贴附至所述微型发光二级管基板1上的步骤包括：\n\n[0049]提供转印板6；将所述ACF图案吸附在所述刀头及吸嘴系统5上；所述冲切及吸附一体设备将所述ACF图案转移至所述转印板6；将所述转印板6具有所述ACF图案的一面与所述微型发光二极管基板1贴合。结合图4所示，将刀头及吸嘴系统5和转印设备(图中未示出)的转印板6处于相互朝向的状态，可以控制刀头及吸嘴系统5的移动，使得刀头及吸嘴系统5位于转印板6的上方，且刀头及吸嘴系统5具有ACF单元4的一侧朝向转印板6。然后刀头及吸嘴系统5朝向转印板6运动并将ACF单元4转移至转印板6。\n\n[0050]所述将所述转印板6具有所述ACF图案的一面与所述微型发光二极管基板1贴合前的步骤包括：将多个所述ACF单元4与多个所述焊盘2一一对应，且每个所述ACF单元4与相对应的所述焊盘2在所述微型发光二极管基板1上的正投影相互重合。结合图5所示，转印设备的转印板6对准微型发光二极管基板，转印板6具有ACF单元4的一侧朝向微型发光二极管基板，微型发光二极管基板具有焊盘2的一侧朝向转印板6，转印板6朝向微型发光二极管基板运动并将ACF单元4转印到微型发光二极管基板上。微型发光二极管基板1上具有若干焊盘2，并与ACF单元4一一对应。\n\n[0051]所述将多个所述ACF单元4与多个所述焊盘2一一对应的步骤包括：移动所述刀头及吸嘴系统5，使得某个冲切刀8对准该冲切刀内的ACF单元4贴附在转印板上的区域，且该ACF单元贴附在转印板上的区域与相对应的所述焊盘在所述微型发光二极管基板上的区域正投影相互重合。即可以以某一个冲切刀8为基准进行对位，例如刀头及吸嘴系统5角落的冲切刀对准其应该放置在转印板6上的位置，则所有的ACF单元4的位置就随之固定了。而所有的焊盘在所述微型发光二极管基板上的区域也都是固定的，即实现了将多个所述ACF单元4与多个所述焊盘2一一对应。对角落的冲切刀8可以测量其到第一对位标记的位移或者到转印板6边缘的位移等其他方式来对位测量。\n\n[0052]结合图6所示，冲切刀8的一种示例性的实施方式是：所述冲切刀8具有中空空腔，且冲切刀8的刀刃呈闭环，这种闭环状的刀刃可以是方形、椭圆形、圆形等其他形状的刀刃。\n\n[0053]刀头及吸嘴系统5的一种示例性的实施方式是：刀头及吸嘴系统5包括吸盘9和负压管10。吸盘9设置在负压管10的端部，同时，吸盘9伸入冲切刀8的内部，位于冲切刀8的中空空腔内，吸盘9具有若干通孔，吸盘9上的若干通孔是均匀分布的。刀头及吸嘴系统5向下运动对ACF3进行冲切后，负压管10处于负压状态时，吸盘9可以吸附ACF单元4，吸盘9吸附ACF单元4后，ACF单元4位于冲切刀8的中空空腔内。冲切刀8的数量、吸盘9的数量、负压管10的数量有多个，一个ACF单元4对应一个冲切刀8、一个吸盘9、一根负压管10。另一种方式是：一个冲切刀8内有一个吸盘9，负压管10的数量至少有一根，负压管10端部的口径比较大，可以容纳至少一个冲切刀8。\n\n[0054]冲切及吸附一体设备包括驱使刀头及吸嘴系统5移动的三维移动系统(图中未示出)，刀头及吸嘴系统5安装在三维移动系统上。三维移动系统可以驱使刀头及吸嘴系统5在XYZ轴上移动。\n\n[0055]结合图7所示，转印设备包括用于吸附及翻转转印板6的吸附及翻转系统。吸附及翻转系统的一种示例性的实施方式是：吸附及翻转系统包括旋转式安装的旋转杆11，连接在旋转杆11上的多根连接杆12。旋转杆11可以围绕自身的中心线进行旋转，连接杆12和旋转杆11沿着横向和纵向方向设置。多根连接杆12等间距分布，每根连接杆12上设有均匀分布的若干个吸附盘13，旋转杆11安装在转印板6的对称中心位置上，连接杆12的中心位置连接在旋转杆11上。吸附盘13贴着转印板6，连接杆12具有负压中空空腔，负压中空空腔处于负压状态时，吸附盘13对转印板6具有吸附力从而可以将转印板6吸附在多根连接杆12上。旋转杆11可以是中空的，并且与连接杆12相通。\n\n[0056]转印设备还包括用于驱动旋转杆11直线运动的气缸(图中未示出)，旋转杆11通过轴承座14安装在气缸上。气缸通过轴承座14可以驱动旋转杆11直线运动(上下运动)，从而带动转印板6上下运动。在ACF单元4由刀头及吸嘴系统5转移至转印板6时，气缸可以伸缩运动，从而使得转印板6和刀头及吸嘴系统5相互靠近。在ACF单元4由转印板6转移至微型发光二极管基板时，气缸根据实际需要，气缸也可以伸缩运动，从而使得转印板6和微型发光二极管基板相互靠近。在ACF单元4进行转移的过程中，可以采用其他方式、其他设备替代气缸的作用。\n\n[0057]本申请中，吸附及翻转系统可以采用机械手等其他方式、其他设备来替代。\n\n[0058]在ACF单元4由转印板6转移至微型发光二极管基板时，为了方便精准对位，转印板6的四周设有第一对位标记7，微型发光二极管基板的四周设有第二对位标记15。所述将多个所述ACF单元4与多个所述焊盘2一一对应的步骤包括：在所述转印板6上设置多个第一对位标记7；在所述微型发光二极管基板1上设置多个第二对位标记15，多个所述第二对位标记15与多个所述第一对位标记7一一对应；将每个所述第一对位标记7与相应的所述第二对位标记15对齐。\n\n[0059]以上对本申请实施例所提供的一种ACF的贴合方法进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。', '技术领域\n\n[0001]本申请涉及ACF贴合的技术领域，具体涉及一种ACF的贴合方法。\n\n背景技术\n\n[0002]近年来，显示行业得到了快速的发展，尤其是我国的显示行业，发生了天翻地覆的变化。通过技术、人才、先进设备的引进、以及核心技术的创新，我国已成为世界显示器制造大国，显示器水平达到世界领先水平。不仅结束了我国少屏的窘境，还引领显示界的潮流。\n\n[0003]显示行业的竞争变得越来越激烈，更新周期不断缩短，以液晶显示器(LiquidCrystal Display，缩写LCD)与有机发光二极管(Organic Light-Emitting Diode，缩写OLED)的竞争尤为激烈。随着OLED工艺、材料的成熟以及良率的提升，LCD渐渐失去了在小尺寸的市场优势，特别是在手机市场，OLED已渐渐取代LCD的地位。近年来也兴起了很多新型的显示技术，例如QLED显示、电子墨水屏(E-ink)、柔性LCD、PE显示、mini-LED、micro-LED等等。这些新技术因还存在成本、寿命、可靠性等一些问题，还具备不了像LCD、OLED的量产性。micro-LED因具有色域广、对比度高、响应速度快、分辨率高、寿命长等优点，被很多企业大力推广，同时被视为下一代最具有潜力的新型显示技术。\n\n[0004]micro-LED目前已有多种样品(demo)面世，但仍然存在很多问题需要克服。例如后段制作困难、亮度不均匀、可靠性、转移良率低、薄膜晶体管(Thin Film Transistor，缩写TFT)均匀性差、串色、混色、成本高等问题。巨量转移技术及检测修复技术是micro-LED显示技术最关键的技术。目前各大厂家都在想办法解决这两个问题。巨量转移技术又分为多种，例如激光转移、stamp转移、静电力转移、流体转移、滚印等。本申请针对stamp转移中ACF贴合方法提出发明方案。如图1、图2所示，常规的stamp转移，通常是采用整面的ACF贴附在驱动背板上，通过加热加压的方式与micro-LED芯片进行键合连接，但因micro-LED显示技术对ACF的要求很高且特殊，加热加压后，整面ACF中没有利用到的ACF就浪费了，因此ACF整面贴合不仅浪费材料增加成本，而且由于ACF是异方型导电胶膜，还容易导致micro-LED面板短路，影响良率。对于micro-LED无缝拼接产品，因整面的ACF，还需要采用激光设备对ACF单元的四边进行精密切割，不仅增加制程时间(tact time)而且增加成本。\n\n发明内容\n\n[0005]本申请提供一种ACF的贴合方法，可以节约ACF材料、提高生产良率、降低生产成本。\n\n[0006]本申请提供一种ACF的贴合方法，\n\n[0007]提供微型发光二极管基板，所述微型发光二级管基板上阵列设有多个焊盘；\n\n[0008]获取ACF图案，所述ACF图案中阵列设置多个ACF单元；\n\n[0009]将所述ACF图案贴附至所述微型发光二级管基板上，其中，多个所述ACF单元与多个所述焊盘一一对应，且每个所述ACF单元贴附在相应的所述焊盘上。\n\n[0010]优选地，所述获取ACF图案的步骤包括：\n\n[0011]提供ACF；\n\n[0012]提供冲切及吸附一体设备对所述ACF进行冲切获得所述ACF图案，其中，所述冲切及吸附一体设备包括刀头及吸嘴系统，所述刀头及吸嘴系统阵列设有多个冲切刀，多个所述冲切刀与多个所述ACF单元一一对应。\n\n[0013]优选地，所述将所述ACF图案贴附至所述微型发光二级管基板上的步骤包括：\n\n[0014]提供转印板；\n\n[0015]将所述ACF图案吸附在所述刀头及吸嘴系统上；\n\n[0016]所述冲切及吸附一体设备将所述ACF图案转移至所述转印板；\n\n[0017]将所述转印板具有所述ACF图案的一面与所述微型发光二极管基板贴合。\n\n[0018]优选地，所述将所述转印板具有所述ACF图案的一面与所述微型发光二极管基板贴合前的步骤包括：\n\n[0019]将多个所述ACF单元与多个所述焊盘一一对应，且每个所述ACF单元与相对应的所述焊盘在所述微型发光二极管基板上的正投影相互重合。\n\n[0020]优选地，所述将多个所述ACF单元与多个所述焊盘一一对应的步骤包括：\n\n[0021]在所述转印板上设置多个第一对位标记；\n\n[0022]在所述微型发光二极管基板上设置多个第二对位标记，多个所述第二对位标记与多个所述第一对位标记一一对应；\n\n[0023]将每个所述第一对位标记与相应的所述第二对位标记对齐。\n\n[0024]优选地，移动所述刀头及吸嘴系统，使得某个冲切刀对准该冲切刀内的ACF单元贴附在转印板上的位置。\n\n[0025]优选地，所述冲切刀具有中空空腔，且冲切刀的刀刃呈闭环。\n\n[0026]优选地，所述刀头及吸嘴系统包括吸盘和负压管；吸盘设置在负压管的端部，吸盘位于冲切刀的中空空腔内，吸盘具有若干通孔。\n\n[0027]优选地，所述冲切及吸附一体设备包括驱使刀头及吸嘴系统移动的三维移动系统，刀头及吸嘴系统安装在三维移动系统上。\n\n[0028]优选地，所述将所述转印板具有所述ACF图案的一面与所述微型发光二极管基板贴合的步骤包括：\n\n[0029]提供转印设备，所述转印设备驱动所述转印板具有所述ACF图案的一面与所述微型发光二极管基板贴合，其中，所述转印设备包括用于驱动所述转印板直线运动的气缸，所述转印板通过轴承座安装在气缸上。\n\n[0030]本申请中通过一种ACF的贴合方法，无需整面贴合ACF，而是对ACF进行冲切，节约了ACF材料、同时，相比现有技术中先将整面贴合ACF贴附至微型发光二级管基板上再进行激光切割形成ACF图案，本申请通过先获取ACF图案，然后再将所述ACF图案贴附至所述微型发光二级管基板上，省去了激光精密切割的工序，不需要采用激光设备对ACF单元进行精密切割，从而避免激光精密切割工序对ACF或微型发光二级管基板的损害，且能够避免激光精密切割工序过程中切割不完整或切割过程中产生导电性碎片而导致micro-LED基板短路，提高了生产节拍、生产良率、降低了生产成本，为micro-LED显示技术的量产提供技术支持。\n\n附图说明\n\n[0031]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0032]图1是本申请现有技术中提供的微型发光二极管的结构示意图；\n\n[0033]图2是本申请现有技术中ACF整面贴合微型发光二极管基板的结构示意图；\n\n[0034]图3是本申请实施例中提供的刀头及吸嘴系统冲切ACF的结构示意图；\n\n[0035]图4是本申请实施例中提供的ACF单元转移至转印板的结构示意图；\n\n[0036]图5是本申请实施例中提供的ACF单元转移至微型发光二极管基板的结构示意图；\n\n[0037]图6是本申请实施例中提供的刀头及吸嘴系统的结构示意图；\n\n[0038]图7是本申请实施例中提供的吸附及翻转系统的结构示意图；\n\n[0039]图8是本申请一种ACF的贴合方法的流程图；\n\n[0040]其中，附图标记如下：1微型发光二极管基板，2焊盘，3ACF，4ACF单元，5刀头及吸嘴系统，6转印板，7第一对位标记，8冲切刀，9吸盘，10负压管，11旋转杆，12连接杆，13吸附盘，14轴承座，15第二对位标记。\n\n具体实施方式\n\n[0041]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0042]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0043]在本申请中，“示例性”一词用来表示“用作例子、例证或说明”。本申请中被描述为“示例性”的任何实施例不一定被解释为比其它实施例更优选或更具优势。为了使本领域任何技术人员能够实现和使用本发明，给出了以下描述。在以下描述中，为了解释的目的而列出了细节。应当明白的是，本领域普通技术人员可以认识到，在不使用这些特定细节的情况下也可以实现本发明。在其它实例中，不会对公知的结构和过程进行详细阐述，以避免不必要的细节使本发明的描述变得晦涩。因此，本发明并非旨在限于所示的实施例，而是与符合本申请所公开的原理和特征的最广范围相一致。\n\n[0044]本申请实施例提供一种ACF的贴合方法，以下分别进行详细说明。\n\n[0045]结合图8所示，一种ACF的贴合方法，S1：提供微型发光二极管基板1，所述微型发光二级管基板1上阵列设有多个焊盘2。S2：获取ACF图案，所述ACF图案中阵列设置多个ACF单元4。S3：将所述ACF图案贴附至所述微型发光二级管基板1上，其中，多个所述ACF单元4与多个所述焊盘2一一对应，且每个所述ACF单元4贴附在相应的所述焊盘2上。\n\n[0046]所述获取ACF图案的步骤包括：提供ACF3；提供冲切及吸附一体设备对所述ACF3进行冲切获得所述ACF图案。\n\n[0047]请参阅图3至图5，所述冲切及吸附一体设备包括刀头及吸嘴系统5，所述刀头及吸嘴系统5阵列设有多个冲切刀8，多个所述冲切刀8与多个所述ACF单元4一一对应。根据微型发光二极管基板1(micro-LED)的像素间距(pixel pitch)采用冲切及吸附一体设备对ACF3按照预定的规格进行冲切，冲切及吸附一体设备将冲切出来的ACF单元4(ACF pattern)吸附在刀头及吸嘴系统5上，冲切出来的每个所述ACF单元4被吸附至相应的每个所述冲切刀8上，刀头及吸嘴系统5从上往下运动对ACF3进行冲切，冲切出阵列的多个ACF单元4，一个冲切刀8冲切出一个ACF单元4，阵列的多个冲切刀8冲切出阵列的多个ACF单元4，所有的ACF单元4构成了ACF图案，从而，所述刀头及吸嘴系统5的所有冲切刀8获取的ACF单元4构成ACF图案。\n\n[0048]所述将所述ACF图案贴附至所述微型发光二级管基板1上的步骤包括：\n\n[0049]提供转印板6；将所述ACF图案吸附在所述刀头及吸嘴系统5上；所述冲切及吸附一体设备将所述ACF图案转移至所述转印板6；将所述转印板6具有所述ACF图案的一面与所述微型发光二极管基板1贴合。结合图4所示，将刀头及吸嘴系统5和转印设备(图中未示出)的转印板6处于相互朝向的状态，可以控制刀头及吸嘴系统5的移动，使得刀头及吸嘴系统5位于转印板6的上方，且刀头及吸嘴系统5具有ACF单元4的一侧朝向转印板6。然后刀头及吸嘴系统5朝向转印板6运动并将ACF单元4转移至转印板6。\n\n[0050]所述将所述转印板6具有所述ACF图案的一面与所述微型发光二极管基板1贴合前的步骤包括：将多个所述ACF单元4与多个所述焊盘2一一对应，且每个所述ACF单元4与相对应的所述焊盘2在所述微型发光二极管基板1上的正投影相互重合。结合图5所示，转印设备的转印板6对准微型发光二极管基板，转印板6具有ACF单元4的一侧朝向微型发光二极管基板，微型发光二极管基板具有焊盘2的一侧朝向转印板6，转印板6朝向微型发光二极管基板运动并将ACF单元4转印到微型发光二极管基板上。微型发光二极管基板1上具有若干焊盘2，并与ACF单元4一一对应。\n\n[0051]所述将多个所述ACF单元4与多个所述焊盘2一一对应的步骤包括：移动所述刀头及吸嘴系统5，使得某个冲切刀8对准该冲切刀内的ACF单元4贴附在转印板上的区域，且该ACF单元贴附在转印板上的区域与相对应的所述焊盘在所述微型发光二极管基板上的区域正投影相互重合。即可以以某一个冲切刀8为基准进行对位，例如刀头及吸嘴系统5角落的冲切刀对准其应该放置在转印板6上的位置，则所有的ACF单元4的位置就随之固定了。而所有的焊盘在所述微型发光二极管基板上的区域也都是固定的，即实现了将多个所述ACF单元4与多个所述焊盘2一一对应。对角落的冲切刀8可以测量其到第一对位标记的位移或者到转印板6边缘的位移等其他方式来对位测量。\n\n[0052]结合图6所示，冲切刀8的一种示例性的实施方式是：所述冲切刀8具有中空空腔，且冲切刀8的刀刃呈闭环，这种闭环状的刀刃可以是方形、椭圆形、圆形等其他形状的刀刃。\n\n[0053]刀头及吸嘴系统5的一种示例性的实施方式是：刀头及吸嘴系统5包括吸盘9和负压管10。吸盘9设置在负压管10的端部，同时，吸盘9伸入冲切刀8的内部，位于冲切刀8的中空空腔内，吸盘9具有若干通孔，吸盘9上的若干通孔是均匀分布的。刀头及吸嘴系统5向下运动对ACF3进行冲切后，负压管10处于负压状态时，吸盘9可以吸附ACF单元4，吸盘9吸附ACF单元4后，ACF单元4位于冲切刀8的中空空腔内。冲切刀8的数量、吸盘9的数量、负压管10的数量有多个，一个ACF单元4对应一个冲切刀8、一个吸盘9、一根负压管10。另一种方式是：一个冲切刀8内有一个吸盘9，负压管10的数量至少有一根，负压管10端部的口径比较大，可以容纳至少一个冲切刀8。\n\n[0054]冲切及吸附一体设备包括驱使刀头及吸嘴系统5移动的三维移动系统(图中未示出)，刀头及吸嘴系统5安装在三维移动系统上。三维移动系统可以驱使刀头及吸嘴系统5在XYZ轴上移动。\n\n[0055]结合图7所示，转印设备包括用于吸附及翻转转印板6的吸附及翻转系统。吸附及翻转系统的一种示例性的实施方式是：吸附及翻转系统包括旋转式安装的旋转杆11，连接在旋转杆11上的多根连接杆12。旋转杆11可以围绕自身的中心线进行旋转，连接杆12和旋转杆11沿着横向和纵向方向设置。多根连接杆12等间距分布，每根连接杆12上设有均匀分布的若干个吸附盘13，旋转杆11安装在转印板6的对称中心位置上，连接杆12的中心位置连接在旋转杆11上。吸附盘13贴着转印板6，连接杆12具有负压中空空腔，负压中空空腔处于负压状态时，吸附盘13对转印板6具有吸附力从而可以将转印板6吸附在多根连接杆12上。旋转杆11可以是中空的，并且与连接杆12相通。\n\n[0056]转印设备还包括用于驱动旋转杆11直线运动的气缸(图中未示出)，旋转杆11通过轴承座14安装在气缸上。气缸通过轴承座14可以驱动旋转杆11直线运动(上下运动)，从而带动转印板6上下运动。在ACF单元4由刀头及吸嘴系统5转移至转印板6时，气缸可以伸缩运动，从而使得转印板6和刀头及吸嘴系统5相互靠近。在ACF单元4由转印板6转移至微型发光二极管基板时，气缸根据实际需要，气缸也可以伸缩运动，从而使得转印板6和微型发光二极管基板相互靠近。在ACF单元4进行转移的过程中，可以采用其他方式、其他设备替代气缸的作用。\n\n[0057]本申请中，吸附及翻转系统可以采用机械手等其他方式、其他设备来替代。\n\n[0058]在ACF单元4由转印板6转移至微型发光二极管基板时，为了方便精准对位，转印板6的四周设有第一对位标记7，微型发光二极管基板的四周设有第二对位标记15。所述将多个所述ACF单元4与多个所述焊盘2一一对应的步骤包括：在所述转印板6上设置多个第一对位标记7；在所述微型发光二极管基板1上设置多个第二对位标记15，多个所述第二对位标记15与多个所述第一对位标记7一一对应；将每个所述第一对位标记7与相应的所述第二对位标记15对齐。\n\n[0059]以上对本申请实施例所提供的一种ACF的贴合方法进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10920, 23974, '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种微型发光二极管转移方法及显示面板制造方法。\n\n背景技术\n\n[0002]微型发光二极管显示面板(Micro-LED面板、Min-LED面板)发展成未来显示技术的热点之一，和目前的LCD、OLED显示器件相比，具有反应快、高色域、高PPI、低能耗等优势；但其技术难点多且技术复杂，特别是其关键技术：巨量转移技术。\n\n[0003]微型发光二极管在制作完成后需要逐一转移到阵列基板的所需位置，需要转移的微型发光二极管的数量大、转移效率低，且转移后的位置精度要求高，需耗费大量的资源。\n\n发明内容\n\n[0004]本申请实施例提供一种微型发光二极管转移方法及显示面板制造方法，可以解决现有转移技术中技术难点多、转移效率低的问题，减小资源消耗，提升转移效率。\n\n[0005]本申请实施例提供了一种微型发光二极管转移方法，包括如下步骤：\n\n[0006]步骤S100：提供一承载基板和一阵列基板，所述承载基板上设有多个微型发光二极管，所述微型发光二极管包括绑定端子，相邻的所述微型发光二极管的所述绑定端子的中心之间具有第一预设距离，所述阵列基板上设有与所述绑定端子相应的多个焊接端子，相邻的所述焊接端子的中心之间具有第二预设距离，其中，所述第二预设距离为所述第一预设距离的n倍，n为正整数；\n\n[0007]步骤S200：转移所述微型发光二极管，将所述承载基板与所述阵列基板对向设置，将所述微型发光二极管的所述绑定端子与所述阵列基板上任一待绑定的所述焊接端子对接并固定，完成将所述微型发光二极管转移至所述阵列基板，所转移的相邻所述微型发光二极管的所述绑定端子的中心的间距与相邻的所述焊接端子的中心的间距相等；\n\n[0008]重复所述步骤S200，直至所述承载基板上的所述微型发光二极管转移完毕。\n\n[0009]可选的，在本申请的一些实施例中，在每一所述步骤S200中，所述承载基板上被转移的相邻所述微型发光二极管之间间隔n-1个所述微型发光二极管；\n\n[0010]将所述承载基板上的所述微型发光二极管全部转移完毕需要重复n次的所述步骤S200。\n\n[0011]可选的，在本申请的一些实施例中，所述绑定端子或所述焊接端子上设有连接剂。\n\n[0012]可选的，在本申请的一些实施例中，所述步骤S200：包括如下步骤：\n\n[0013]步骤S210：将所述微型发光二极管的所述绑定端子与所述阵列基板上对应的所述焊接端子通过所述连接剂接触连接；\n\n[0014]步骤S220：加热处理所述阵列基板或所述承载基板，使所述连接剂融化；\n\n[0015]步骤S230：冷却处理所述阵列基板或所述承载基板，使所述连接剂固化，所述微型发光二极管的所述绑定端子与所述阵列基板上对应的所述焊接端子通过所述连接剂固定连接；\n\n[0016]步骤S240：将所述承载基板上固定连接于所述阵列基板的所述微型发光二极管与所述承载基板分离。\n\n[0017]可选的，在本申请的一些实施例中，所述连接剂为锡膏。\n\n[0018]可选的，在本申请的一些实施例中，所述微型发光二极管与所述承载基板通过静电吸附、胶水吸附、磁性吸附中的任一种方式连接。\n\n[0019]可选的，在本申请的一些实施例中，所述微型发光二极管与所述连接剂的固定连接力大于所述微型发光二极管与所述承载基板之间的连接力。\n\n[0020]可选的，在本申请的一些实施例中，所述步骤S220还包括给所述承载基板施加预压力，以减小所述微型发光二极管的所述绑定端子与所述阵列基板上对应的所述焊接端子之间的距离。\n\n[0021]可选的，在本申请的一些实施例中，所述承载基板上的微型发光二极管由晶圆上转移而来。\n\n[0022]相应的，本申请实施例还提供一种显示面板制造方法，包括：使用上述任一项所述的微型发光二极管转移方法在所述阵列基板上布设所述微型发光二极管；封装所述阵列基板以及所述微型发光二极管，形成所述显示面板。\n\n[0023]本申请实施例中，提供一种微型发光二极管转移方法及显示面板制造方法，设置承载基板上相邻的微型发光二极管的绑定端子的中心之间具有第一预设距离L1，阵列基板上相邻的焊接端子的中心之间具有第二预设距离L2，第二预设距离L2为第一预设距离L1的n倍，n为正整数，将承载基板与阵列基板对向设置转移微型发光二极管，只需要转移n次即可将承载基板所有的微型发光二极管转移至阵列基板上，可以极大的提升转移效率，减小资源消耗。\n\n附图说明\n\n[0024]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0025]图1是本申请一实施例提供的承载基板的示意图；\n\n[0026]图2是本申请一实施例提供的阵列基板的示意图；\n\n[0027]图3是本申请一实施例提供的阵列基板上设有连接剂的示意图；\n\n[0028]图4是本申请一实施例提供的微型发光二极管转移过程的示意图；\n\n[0029]图5是本申请一实施例提供的微型发光二极管转移过程的示意图；\n\n[0030]图6是本申请一实施例提供的微型发光二极管转移过程的示意图；\n\n[0031]图7是本申请一实施例提供的微型发光二极管转移过程的示意图；\n\n[0032]图8是本申请一实施例提供的微型发光二极管转移过程的示意图；\n\n[0033]图9是本申请一实施例提供的微型发光二极管转移过程的示意图；\n\n[0034]图10是本申请一实施例提供的微型发光二极管转移步骤的示意图；\n\n[0035]图11是本申请一实施例提供的微型发光二极管转移步骤的示意图。\n\n具体实施方式\n\n[0036]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0037]本申请实施例提供一种微型发光二极管转移方法及显示面板制造方法。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0038]实施例一、\n\n[0039]请参阅图1、图2、图4、图8、图9、图10，本申请的实施例提供了一种微型发光二极管转移方法，包括如下的步骤S100、步骤S200。\n\n[0040]步骤S100：如图1、图2、图10所示，提供一承载基板200和一阵列基板100，承载基板200上设有多个微型发光二极管500，微型发光二极管500包括绑定端子510，相邻的微型发光二极管500的绑定端子510的中心之间具有第一预设距离L1，阵列基板100上设有与绑定端子510相应的多个焊接端子110，相邻的焊接端子110的中心之间具有第二预设距离L2，其中，第二预设距离L2为第一预设距离L1的n倍，n为正整数。\n\n[0041]步骤S200：如图4、图8、图9、图10所示，转移微型发光二极管500，将承载基板200与阵列基板100对向设置，将微型发光二极管500的绑定端子510与阵列基板100上任一待绑定的焊接端子110对接并固定，完成将微型发光二极管500转移至阵列基板100，所转移的相邻微型发光二极管500的绑定端子510的中心的间距与相邻的所述焊接端子110的中心的间距相等。\n\n[0042]重复步骤S200，直至承载基板200上的微型发光二极管500转移完毕。\n\n[0043]具体的，承载基板200的基底可以为玻璃等材质，在此不限定，承载基板200上设有微型发光二极管500，微型发光二极管500具有绑定端子510，绑定端子510可以包括阴极与阳极，微型发光二极管500的绑定端子510的中心是指同一绑定端子510的阴极与阳极的中心，或者微型发光二极管500的绑定端子510的中心是指微型发光二极管500的中心，承载基板200上的相邻的微型发光二极管500的绑定端子510的中心之间具有第一预设距离L1。\n\n[0044]具体的，阵列基板100的基底可以为玻璃等材质，在此不限定。阵列基板100上设有可以驱动微型发光二极管500发光的走线、电路等结构。阵列基板100上设有焊接端子110，焊接端子110可以包括与微型发光二极管500的阴极和阳极相对应的第一焊接端子和第二焊接端子，焊接端子110的中心是指同一焊接端子110的第一焊接端子和第二焊接端子的中心。当阵列基板100上有划分子像素，每一子像素对应一个微型发光二极管500，焊接端子110的中心还可以指子像素的中心。相邻的焊接端子110的中心之间具有第二预设距离L2。\n\n[0045]具体的，第二预设距离L2为第一预设距离L1的n倍，n为正整数，那么在执行步骤S200将承载基板200上设有的微型发光二极管500转移至阵列基板100上时，将承载基板200与阵列基板100对向设置，将微型发光二极管500的绑定端子510与阵列基板100上任一待绑定的焊接端子110对接并固定，完成将微型发光二极管500转移至阵列基板100，每一次步骤S200转移了承载基板200上微型发光二极管500的总数的1/n，重复步骤S200，可以将承载基板200上所有设有的微型发光二极管500转移至阵列基板100上。重复步骤S200n次，可以将承载基板200上所有设有的微型发光二极管500转移至阵列基板100上，可以极大的提升转移效率，减小资源消耗。\n\n[0046]具体的，微型发光二极管500转移至阵列基板100上后，每一微型发光二极管500的绑定端子510与阵列基板100上对应的焊接端子110电性连接，可以通过锡膏等材料电性连接，然后通过阵列基板100上的走线、驱动电路等驱动微型发光二极管500发光。\n\n[0047]其中，在每一步骤S200中，承载基板200上被转移的相邻微型发光二极管500之间间隔n-1个微型发光二极管500；将承载基板200上的微型发光二极管500全部转移完毕需要重复n次的步骤S200，可以极大的提升转移效率，减小资源消耗。\n\n[0048]具体的，如图8所示，第二预设距离L2为第一预设距离L1的n倍，n为正整数；那么每一次执行步骤S200转移了承载基板200上微型发光二极管500的总数的1/n。在每一次转移步骤S200所转移到阵列基板100上的微型发光二极管500之中，每一次所转移的相邻的微型发光二极管500的绑定端子510中心之间的距离L3等于第二预设距离L2，每一次所转移的相邻的微型发光二极管500之间间隔n-1个焊接端子110或n-1个微型发光二极管500。\n\n[0049]具体的，例如n等于1时，第二预设距离L2等于第一预设距离L1，执行1次步骤S200就可以转移完承载基板200上设有的所有微型发光二极管500。\n\n[0050]具体的，例如n等于2时，第二预设距离L2为第一预设距离的2倍，执行2次步骤S200就可以转移完承载基板200上设有的所有微型发光二极管500。\n\n[0051]具体的，例如n等于3时，第二预设距离L2为第一预设距离的3倍，执行3次步骤S200就可以转移完承载基板200上设有的所有微型发光二极管500。\n\n[0052]实施例二、\n\n[0053]请参阅图1至图11，相比于实施例一，本实施例进一步详细描述了一种微型发光二极管转移方法，如图10所示，微型发光二极管转移方法包括如下步骤的S100和S200。\n\n[0054]步骤S100：如图1、图2、图10所示，提供一承载基板200和一阵列基板100，承载基板200上设有多个微型发光二极管500，微型发光二极管500包括绑定端子510，相邻的微型发光二极管500的绑定端子510的中心之间具有第一预设距离L1，阵列基板100上设有与绑定端子510相应的多个焊接端子110，相邻的焊接端子110的中心之间具有第二预设距离L2，其中，第二预设距离L2为第一预设距离L1的n倍，n为正整数。\n\n[0055]其中，在一些实施例中，微型发光二极管500与承载基板200通过静电吸附、胶水吸附、磁性吸附中的任一种方式连接，微型发光二极管500与承载基板200还可以由其他方式连接。\n\n[0056]其中，在一些实施例中，承载基板200上的微型发光二极管500由晶圆上转移而来。\n\n[0057]步骤S200：如图4、图8、图9、图10所示，转移微型发光二极管500，将承载基板200与阵列基板100对向设置，将微型发光二极管500的绑定端子510与阵列基板100上任一待绑定的焊接端子110对接并固定，完成将微型发光二极管500转移至阵列基板100，所转移的相邻微型发光二极管500的绑定端子510的中心的间距与相邻的所述焊接端子110的中心的间距相等。\n\n[0058]重复步骤S200，直至承载基板200上的微型发光二极管500转移完毕。\n\n[0059]其中，如图11所示，步骤S200包括如下的步骤S210、S220、S230、S240。\n\n[0060]步骤S210：将微型发光二极管500的绑定端子510与阵列基板100上对应的焊接端子110通过连接剂300接触连接。\n\n[0061]其中，绑定端子510或焊接端子110上设有连接剂300，图3示意了焊接端子110上设有连接剂300。\n\n[0062]其中，连接剂300为锡膏，连接剂还可以为其他材料，例如Ag浆、In合金、Sn合金等材料，在此不限定。\n\n[0063]具体的，如图4所示，将承载基板200与阵列基板100对向设置，即承载基板200上设有的微型发光二极管500的绑定端子510与阵列基板100的焊接端子110相对设置，将微型发光二极管500的绑定端子510与阵列基板100上任一待绑定的焊接端子110通过连接剂300相连。\n\n[0064]步骤S220：加热处理阵列基板100或承载基板200，使连接剂300融化。\n\n[0065]具体的，如图5所示，加热处理阵列基板100或承载基板200使连接剂300融化。在一些实施方式中，可以同时加热处理阵列基板100和承载基板200，例如在一个加热腔内同时加热处理阵列基板100和承载基板200。在一些实施方式中，可以局部加热处理阵列基板100或/和承载基板200上某些区域，例如只加热承载基板200上正在转移微型发光二极管500的部位。\n\n[0066]具体的，加热处理使连接剂300融化，为后面的工艺做准备，让微型发光二极管500上的绑定端子510与阵列基板100上的焊接端子110固定连接。\n\n[0067]其中，如图6所示，步骤S220还可以包括给承载基板200施加预压力，以减小微型发光二极管500的绑定端子510与阵列基板100上对应的焊接端子110之间的距离。\n\n[0068]具体的，当连接剂300在加热处理中熔融后，给承载基板200施加预压力，可以使得微型发光二极管500的绑定端子510与阵列基板100上对应的焊接端子110之间的距离减小，经过后续工艺可以使得微型发光二极管500的绑定端子510与阵列基板100上对应的焊接端子110之间连接得更加紧密。\n\n[0069]具体的，在一些实施例中，当连接剂300在加热处理中熔融后，给承载基板200施加预压力，可以使得微型发光二极管500的绑定端子510或/和阵列基板100上对应的焊接端子110挤压进入连接剂300内部，经过后续工艺可以使得微型发光二极管500的绑定端子510与阵列基板100上对应的焊接端子110之间连接得更加紧密。\n\n[0070]具体的，在一些实施例中，当连接剂300在加热处理中熔融后，给承载基板200施加预压力，可以使得微型发光二极管500的绑定端子510与阵列基板100上对应的焊接端子110接触，经过后续工艺可以使得微型发光二极管500的绑定端子510与阵列基板100上对应的焊接端子110之间连接得更加紧密。\n\n[0071]具体的，加热处理的温度大于连接剂300的熔点，例如连接剂300的材料为锡膏时，加热处理的温度可以大于232摄氏度，以使锡膏融化。\n\n[0072]步骤S230：冷却处理阵列基板100或承载基板200，使连接剂300固化，微型发光二极管500的绑定端子510与阵列基板100上对应的焊接端子110通过连接剂300固定连接。\n\n[0073]具体的，如图7所示，冷却处理阵列基板100或承载基板200使连接剂300固化或凝固。在一些实施方式中，可以同时冷却处理阵列基板100和承载基板200，例如在一个冷却腔内同时冷却处理阵列基板100和承载基板200。在一些实施方式中，可以局部冷却处理阵列基板100或/和承载基板200上某些区域，例如只冷却承载基板200上正在转移微型发光二极管500的部位。\n\n[0074]步骤S240：将承载基板200上固定连接于阵列基板100的微型发光二极管500与承载基板200分离。\n\n[0075]具体的，如图8所示，所转移的微型发光二极管500与连接剂300的固定连接力大于微型发光二极管500与承载基板200之间的连接力，从而在从阵列基板100上移除承载基板200时，使得转移的微型发光二极管500保留在阵列基板100对应的焊接端子110上。\n\n[0076]具体的，在一些实施例中，微型发光二极管500与承载基板200通过静电吸附、胶水吸附、磁性吸附中的任一种方式连接，而所转移的微型发光二极管500与阵列基板100对应的焊接端子110通过连接剂300固定连接，因而所转移的微型发光二极管500与连接剂300的固定连接力大于微型发光二极管500与承载基板200之间的连接力，使得从阵列基板100上移除承载基板200时，使得转移的微型发光二极管500保留在阵列基板100对应的焊接端子110上。\n\n[0077]具体的，第二预设距离L2为第一预设距离L1的n倍，n为正整数，那么在执行步骤S200将承载基板200上设有的微型发光二极管500转移至阵列基板100上时，将承载基板200与阵列基板100对向设置，将微型发光二极管500的绑定端子510与阵列基板100上任一待绑定的焊接端子110对接并固定，完成将微型发光二极管500转移至阵列基板100，每一次步骤S200转移了承载基板200上微型发光二极管500的总数的1/n，重复步骤S200，可以将承载基板200上所有设有的微型发光二极管500转移至阵列基板100上。重复步骤S200n次，可以将承载基板200上所有设有的微型发光二极管500转移至阵列基板100上，可以极大的提升转移效率，减小资源消耗。\n\n[0078]其中，在每一步骤S200中，承载基板200上被转移的相邻微型发光二极管500之间间隔n-1个微型发光二极管500；将承载基板200上的微型发光二极管500全部转移完毕需要重复n次的步骤S200。\n\n[0079]具体的，如图8所示，第二预设距离L2为第一预设距离L1的n倍，n为正整数；那么每一次执行步骤S200转移了承载基板200上微型发光二极管500的总数的1/n。在每一次转移步骤S200所转移到阵列基板100上的微型发光二极管500之中，每一次所转移的相邻的微型发光二极管500的绑定端子510中心之间的距离L3等于第二预设距离L2，每一次所转移的相邻的微型发光二极管500之间间隔n-1个焊接端子110或n-1个微型发光二极管500。\n\n[0080]具体的，例如n等于1时，第二预设距离L2等于第一预设距离L1，执行1次步骤S200就可以转移完承载基板200上设有的所有微型发光二极管500。\n\n[0081]具体的，例如n等于2时，第二预设距离L2为第一预设距离的2倍，执行2次步骤S200就可以转移完承载基板200上设有的所有微型发光二极管500。\n\n[0082]具体的，例如n等于3时，第二预设距离L2为第一预设距离的3倍，执行3次步骤S200就可以转移完承载基板200上设有的所有微型发光二极管500。\n\n[0083]实施例三、\n\n[0084]本申请实施例还提供了一种显示面板制造方法，包括：使用上述任一项所述的微型发光二极管转移方法在阵列基板100上布设微型发光二极管500；封装阵列基板100以及微型发光二极管500，形成显示面板。\n\n[0085]本申请实施例中，设置承载基板上相邻的微型发光二极管的绑定端子的中心之间具有第一预设距离L1，阵列基板上相邻的焊接端子的中心之间具有第二预设距离L2，第二预设距离L2为第一预设距离L1的n倍，n为正整数，将承载基板与阵列基板对向设置转移微型发光二极管，只需要转移n次即可将承载基板所有的微型发光二极管转移至阵列基板上，可以极大的提升转移效率，减小资源消耗。\n\n[0086]以上对本申请实施例所提供的一种微型发光二极管转移方法及显示面板制造方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种微型发光二极管转移方法及显示面板制造方法。\n\n背景技术\n\n[0002]微型发光二极管显示面板(Micro-LED面板、Min-LED面板)发展成未来显示技术的热点之一，和目前的LCD、OLED显示器件相比，具有反应快、高色域、高PPI、低能耗等优势；但其技术难点多且技术复杂，特别是其关键技术：巨量转移技术。\n\n[0003]微型发光二极管在制作完成后需要逐一转移到阵列基板的所需位置，需要转移的微型发光二极管的数量大、转移效率低，且转移后的位置精度要求高，需耗费大量的资源。\n\n发明内容\n\n[0004]本申请实施例提供一种微型发光二极管转移方法及显示面板制造方法，可以解决现有转移技术中技术难点多、转移效率低的问题，减小资源消耗，提升转移效率。\n\n[0005]本申请实施例提供了一种微型发光二极管转移方法，包括如下步骤：\n\n[0006]步骤S100：提供一承载基板和一阵列基板，所述承载基板上设有多个微型发光二极管，所述微型发光二极管包括绑定端子，相邻的所述微型发光二极管的所述绑定端子的中心之间具有第一预设距离，所述阵列基板上设有与所述绑定端子相应的多个焊接端子，相邻的所述焊接端子的中心之间具有第二预设距离，其中，所述第二预设距离为所述第一预设距离的n倍，n为正整数；\n\n[0007]步骤S200：转移所述微型发光二极管，将所述承载基板与所述阵列基板对向设置，将所述微型发光二极管的所述绑定端子与所述阵列基板上任一待绑定的所述焊接端子对接并固定，完成将所述微型发光二极管转移至所述阵列基板，所转移的相邻所述微型发光二极管的所述绑定端子的中心的间距与相邻的所述焊接端子的中心的间距相等；\n\n[0008]重复所述步骤S200，直至所述承载基板上的所述微型发光二极管转移完毕。\n\n[0009]可选的，在本申请的一些实施例中，在每一所述步骤S200中，所述承载基板上被转移的相邻所述微型发光二极管之间间隔n-1个所述微型发光二极管；\n\n[0010]将所述承载基板上的所述微型发光二极管全部转移完毕需要重复n次的所述步骤S200。\n\n[0011]可选的，在本申请的一些实施例中，所述绑定端子或所述焊接端子上设有连接剂。\n\n[0012]可选的，在本申请的一些实施例中，所述步骤S200：包括如下步骤：\n\n[0013]步骤S210：将所述微型发光二极管的所述绑定端子与所述阵列基板上对应的所述焊接端子通过所述连接剂接触连接；\n\n[0014]步骤S220：加热处理所述阵列基板或所述承载基板，使所述连接剂融化；\n\n[0015]步骤S230：冷却处理所述阵列基板或所述承载基板，使所述连接剂固化，所述微型发光二极管的所述绑定端子与所述阵列基板上对应的所述焊接端子通过所述连接剂固定连接；\n\n[0016]步骤S240：将所述承载基板上固定连接于所述阵列基板的所述微型发光二极管与所述承载基板分离。\n\n[0017]可选的，在本申请的一些实施例中，所述连接剂为锡膏。\n\n[0018]可选的，在本申请的一些实施例中，所述微型发光二极管与所述承载基板通过静电吸附、胶水吸附、磁性吸附中的任一种方式连接。\n\n[0019]可选的，在本申请的一些实施例中，所述微型发光二极管与所述连接剂的固定连接力大于所述微型发光二极管与所述承载基板之间的连接力。\n\n[0020]可选的，在本申请的一些实施例中，所述步骤S220还包括给所述承载基板施加预压力，以减小所述微型发光二极管的所述绑定端子与所述阵列基板上对应的所述焊接端子之间的距离。\n\n[0021]可选的，在本申请的一些实施例中，所述承载基板上的微型发光二极管由晶圆上转移而来。\n\n[0022]相应的，本申请实施例还提供一种显示面板制造方法，包括：使用上述任一项所述的微型发光二极管转移方法在所述阵列基板上布设所述微型发光二极管；封装所述阵列基板以及所述微型发光二极管，形成所述显示面板。\n\n[0023]本申请实施例中，提供一种微型发光二极管转移方法及显示面板制造方法，设置承载基板上相邻的微型发光二极管的绑定端子的中心之间具有第一预设距离L1，阵列基板上相邻的焊接端子的中心之间具有第二预设距离L2，第二预设距离L2为第一预设距离L1的n倍，n为正整数，将承载基板与阵列基板对向设置转移微型发光二极管，只需要转移n次即可将承载基板所有的微型发光二极管转移至阵列基板上，可以极大的提升转移效率，减小资源消耗。\n\n附图说明\n\n[0024]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0025]图1是本申请一实施例提供的承载基板的示意图；\n\n[0026]图2是本申请一实施例提供的阵列基板的示意图；\n\n[0027]图3是本申请一实施例提供的阵列基板上设有连接剂的示意图；\n\n[0028]图4是本申请一实施例提供的微型发光二极管转移过程的示意图；\n\n[0029]图5是本申请一实施例提供的微型发光二极管转移过程的示意图；\n\n[0030]图6是本申请一实施例提供的微型发光二极管转移过程的示意图；\n\n[0031]图7是本申请一实施例提供的微型发光二极管转移过程的示意图；\n\n[0032]图8是本申请一实施例提供的微型发光二极管转移过程的示意图；\n\n[0033]图9是本申请一实施例提供的微型发光二极管转移过程的示意图；\n\n[0034]图10是本申请一实施例提供的微型发光二极管转移步骤的示意图；\n\n[0035]图11是本申请一实施例提供的微型发光二极管转移步骤的示意图。\n\n具体实施方式\n\n[0036]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0037]本申请实施例提供一种微型发光二极管转移方法及显示面板制造方法。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0038]实施例一、\n\n[0039]请参阅图1、图2、图4、图8、图9、图10，本申请的实施例提供了一种微型发光二极管转移方法，包括如下的步骤S100、步骤S200。\n\n[0040]步骤S100：如图1、图2、图10所示，提供一承载基板200和一阵列基板100，承载基板200上设有多个微型发光二极管500，微型发光二极管500包括绑定端子510，相邻的微型发光二极管500的绑定端子510的中心之间具有第一预设距离L1，阵列基板100上设有与绑定端子510相应的多个焊接端子110，相邻的焊接端子110的中心之间具有第二预设距离L2，其中，第二预设距离L2为第一预设距离L1的n倍，n为正整数。\n\n[0041]步骤S200：如图4、图8、图9、图10所示，转移微型发光二极管500，将承载基板200与阵列基板100对向设置，将微型发光二极管500的绑定端子510与阵列基板100上任一待绑定的焊接端子110对接并固定，完成将微型发光二极管500转移至阵列基板100，所转移的相邻微型发光二极管500的绑定端子510的中心的间距与相邻的所述焊接端子110的中心的间距相等。\n\n[0042]重复步骤S200，直至承载基板200上的微型发光二极管500转移完毕。\n\n[0043]具体的，承载基板200的基底可以为玻璃等材质，在此不限定，承载基板200上设有微型发光二极管500，微型发光二极管500具有绑定端子510，绑定端子510可以包括阴极与阳极，微型发光二极管500的绑定端子510的中心是指同一绑定端子510的阴极与阳极的中心，或者微型发光二极管500的绑定端子510的中心是指微型发光二极管500的中心，承载基板200上的相邻的微型发光二极管500的绑定端子510的中心之间具有第一预设距离L1。\n\n[0044]具体的，阵列基板100的基底可以为玻璃等材质，在此不限定。阵列基板100上设有可以驱动微型发光二极管500发光的走线、电路等结构。阵列基板100上设有焊接端子110，焊接端子110可以包括与微型发光二极管500的阴极和阳极相对应的第一焊接端子和第二焊接端子，焊接端子110的中心是指同一焊接端子110的第一焊接端子和第二焊接端子的中心。当阵列基板100上有划分子像素，每一子像素对应一个微型发光二极管500，焊接端子110的中心还可以指子像素的中心。相邻的焊接端子110的中心之间具有第二预设距离L2。\n\n[0045]具体的，第二预设距离L2为第一预设距离L1的n倍，n为正整数，那么在执行步骤S200将承载基板200上设有的微型发光二极管500转移至阵列基板100上时，将承载基板200与阵列基板100对向设置，将微型发光二极管500的绑定端子510与阵列基板100上任一待绑定的焊接端子110对接并固定，完成将微型发光二极管500转移至阵列基板100，每一次步骤S200转移了承载基板200上微型发光二极管500的总数的1/n，重复步骤S200，可以将承载基板200上所有设有的微型发光二极管500转移至阵列基板100上。重复步骤S200n次，可以将承载基板200上所有设有的微型发光二极管500转移至阵列基板100上，可以极大的提升转移效率，减小资源消耗。\n\n[0046]具体的，微型发光二极管500转移至阵列基板100上后，每一微型发光二极管500的绑定端子510与阵列基板100上对应的焊接端子110电性连接，可以通过锡膏等材料电性连接，然后通过阵列基板100上的走线、驱动电路等驱动微型发光二极管500发光。\n\n[0047]其中，在每一步骤S200中，承载基板200上被转移的相邻微型发光二极管500之间间隔n-1个微型发光二极管500；将承载基板200上的微型发光二极管500全部转移完毕需要重复n次的步骤S200，可以极大的提升转移效率，减小资源消耗。\n\n[0048]具体的，如图8所示，第二预设距离L2为第一预设距离L1的n倍，n为正整数；那么每一次执行步骤S200转移了承载基板200上微型发光二极管500的总数的1/n。在每一次转移步骤S200所转移到阵列基板100上的微型发光二极管500之中，每一次所转移的相邻的微型发光二极管500的绑定端子510中心之间的距离L3等于第二预设距离L2，每一次所转移的相邻的微型发光二极管500之间间隔n-1个焊接端子110或n-1个微型发光二极管500。\n\n[0049]具体的，例如n等于1时，第二预设距离L2等于第一预设距离L1，执行1次步骤S200就可以转移完承载基板200上设有的所有微型发光二极管500。\n\n[0050]具体的，例如n等于2时，第二预设距离L2为第一预设距离的2倍，执行2次步骤S200就可以转移完承载基板200上设有的所有微型发光二极管500。\n\n[0051]具体的，例如n等于3时，第二预设距离L2为第一预设距离的3倍，执行3次步骤S200就可以转移完承载基板200上设有的所有微型发光二极管500。\n\n[0052]实施例二、\n\n[0053]请参阅图1至图11，相比于实施例一，本实施例进一步详细描述了一种微型发光二极管转移方法，如图10所示，微型发光二极管转移方法包括如下步骤的S100和S200。\n\n[0054]步骤S100：如图1、图2、图10所示，提供一承载基板200和一阵列基板100，承载基板200上设有多个微型发光二极管500，微型发光二极管500包括绑定端子510，相邻的微型发光二极管500的绑定端子510的中心之间具有第一预设距离L1，阵列基板100上设有与绑定端子510相应的多个焊接端子110，相邻的焊接端子110的中心之间具有第二预设距离L2，其中，第二预设距离L2为第一预设距离L1的n倍，n为正整数。\n\n[0055]其中，在一些实施例中，微型发光二极管500与承载基板200通过静电吸附、胶水吸附、磁性吸附中的任一种方式连接，微型发光二极管500与承载基板200还可以由其他方式连接。\n\n[0056]其中，在一些实施例中，承载基板200上的微型发光二极管500由晶圆上转移而来。\n\n[0057]步骤S200：如图4、图8、图9、图10所示，转移微型发光二极管500，将承载基板200与阵列基板100对向设置，将微型发光二极管500的绑定端子510与阵列基板100上任一待绑定的焊接端子110对接并固定，完成将微型发光二极管500转移至阵列基板100，所转移的相邻微型发光二极管500的绑定端子510的中心的间距与相邻的所述焊接端子110的中心的间距相等。\n\n[0058]重复步骤S200，直至承载基板200上的微型发光二极管500转移完毕。\n\n[0059]其中，如图11所示，步骤S200包括如下的步骤S210、S220、S230、S240。\n\n[0060]步骤S210：将微型发光二极管500的绑定端子510与阵列基板100上对应的焊接端子110通过连接剂300接触连接。\n\n[0061]其中，绑定端子510或焊接端子110上设有连接剂300，图3示意了焊接端子110上设有连接剂300。\n\n[0062]其中，连接剂300为锡膏，连接剂还可以为其他材料，例如Ag浆、In合金、Sn合金等材料，在此不限定。\n\n[0063]具体的，如图4所示，将承载基板200与阵列基板100对向设置，即承载基板200上设有的微型发光二极管500的绑定端子510与阵列基板100的焊接端子110相对设置，将微型发光二极管500的绑定端子510与阵列基板100上任一待绑定的焊接端子110通过连接剂300相连。\n\n[0064]步骤S220：加热处理阵列基板100或承载基板200，使连接剂300融化。\n\n[0065]具体的，如图5所示，加热处理阵列基板100或承载基板200使连接剂300融化。在一些实施方式中，可以同时加热处理阵列基板100和承载基板200，例如在一个加热腔内同时加热处理阵列基板100和承载基板200。在一些实施方式中，可以局部加热处理阵列基板100或/和承载基板200上某些区域，例如只加热承载基板200上正在转移微型发光二极管500的部位。\n\n[0066]具体的，加热处理使连接剂300融化，为后面的工艺做准备，让微型发光二极管500上的绑定端子510与阵列基板100上的焊接端子110固定连接。\n\n[0067]其中，如图6所示，步骤S220还可以包括给承载基板200施加预压力，以减小微型发光二极管500的绑定端子510与阵列基板100上对应的焊接端子110之间的距离。\n\n[0068]具体的，当连接剂300在加热处理中熔融后，给承载基板200施加预压力，可以使得微型发光二极管500的绑定端子510与阵列基板100上对应的焊接端子110之间的距离减小，经过后续工艺可以使得微型发光二极管500的绑定端子510与阵列基板100上对应的焊接端子110之间连接得更加紧密。\n\n[0069]具体的，在一些实施例中，当连接剂300在加热处理中熔融后，给承载基板200施加预压力，可以使得微型发光二极管500的绑定端子510或/和阵列基板100上对应的焊接端子110挤压进入连接剂300内部，经过后续工艺可以使得微型发光二极管500的绑定端子510与阵列基板100上对应的焊接端子110之间连接得更加紧密。\n\n[0070]具体的，在一些实施例中，当连接剂300在加热处理中熔融后，给承载基板200施加预压力，可以使得微型发光二极管500的绑定端子510与阵列基板100上对应的焊接端子110接触，经过后续工艺可以使得微型发光二极管500的绑定端子510与阵列基板100上对应的焊接端子110之间连接得更加紧密。\n\n[0071]具体的，加热处理的温度大于连接剂300的熔点，例如连接剂300的材料为锡膏时，加热处理的温度可以大于232摄氏度，以使锡膏融化。\n\n[0072]步骤S230：冷却处理阵列基板100或承载基板200，使连接剂300固化，微型发光二极管500的绑定端子510与阵列基板100上对应的焊接端子110通过连接剂300固定连接。\n\n[0073]具体的，如图7所示，冷却处理阵列基板100或承载基板200使连接剂300固化或凝固。在一些实施方式中，可以同时冷却处理阵列基板100和承载基板200，例如在一个冷却腔内同时冷却处理阵列基板100和承载基板200。在一些实施方式中，可以局部冷却处理阵列基板100或/和承载基板200上某些区域，例如只冷却承载基板200上正在转移微型发光二极管500的部位。\n\n[0074]步骤S240：将承载基板200上固定连接于阵列基板100的微型发光二极管500与承载基板200分离。\n\n[0075]具体的，如图8所示，所转移的微型发光二极管500与连接剂300的固定连接力大于微型发光二极管500与承载基板200之间的连接力，从而在从阵列基板100上移除承载基板200时，使得转移的微型发光二极管500保留在阵列基板100对应的焊接端子110上。\n\n[0076]具体的，在一些实施例中，微型发光二极管500与承载基板200通过静电吸附、胶水吸附、磁性吸附中的任一种方式连接，而所转移的微型发光二极管500与阵列基板100对应的焊接端子110通过连接剂300固定连接，因而所转移的微型发光二极管500与连接剂300的固定连接力大于微型发光二极管500与承载基板200之间的连接力，使得从阵列基板100上移除承载基板200时，使得转移的微型发光二极管500保留在阵列基板100对应的焊接端子110上。\n\n[0077]具体的，第二预设距离L2为第一预设距离L1的n倍，n为正整数，那么在执行步骤S200将承载基板200上设有的微型发光二极管500转移至阵列基板100上时，将承载基板200与阵列基板100对向设置，将微型发光二极管500的绑定端子510与阵列基板100上任一待绑定的焊接端子110对接并固定，完成将微型发光二极管500转移至阵列基板100，每一次步骤S200转移了承载基板200上微型发光二极管500的总数的1/n，重复步骤S200，可以将承载基板200上所有设有的微型发光二极管500转移至阵列基板100上。重复步骤S200n次，可以将承载基板200上所有设有的微型发光二极管500转移至阵列基板100上，可以极大的提升转移效率，减小资源消耗。\n\n[0078]其中，在每一步骤S200中，承载基板200上被转移的相邻微型发光二极管500之间间隔n-1个微型发光二极管500；将承载基板200上的微型发光二极管500全部转移完毕需要重复n次的步骤S200。\n\n[0079]具体的，如图8所示，第二预设距离L2为第一预设距离L1的n倍，n为正整数；那么每一次执行步骤S200转移了承载基板200上微型发光二极管500的总数的1/n。在每一次转移步骤S200所转移到阵列基板100上的微型发光二极管500之中，每一次所转移的相邻的微型发光二极管500的绑定端子510中心之间的距离L3等于第二预设距离L2，每一次所转移的相邻的微型发光二极管500之间间隔n-1个焊接端子110或n-1个微型发光二极管500。\n\n[0080]具体的，例如n等于1时，第二预设距离L2等于第一预设距离L1，执行1次步骤S200就可以转移完承载基板200上设有的所有微型发光二极管500。\n\n[0081]具体的，例如n等于2时，第二预设距离L2为第一预设距离的2倍，执行2次步骤S200就可以转移完承载基板200上设有的所有微型发光二极管500。\n\n[0082]具体的，例如n等于3时，第二预设距离L2为第一预设距离的3倍，执行3次步骤S200就可以转移完承载基板200上设有的所有微型发光二极管500。\n\n[0083]实施例三、\n\n[0084]本申请实施例还提供了一种显示面板制造方法，包括：使用上述任一项所述的微型发光二极管转移方法在阵列基板100上布设微型发光二极管500；封装阵列基板100以及微型发光二极管500，形成显示面板。\n\n[0085]本申请实施例中，设置承载基板上相邻的微型发光二极管的绑定端子的中心之间具有第一预设距离L1，阵列基板上相邻的焊接端子的中心之间具有第二预设距离L2，第二预设距离L2为第一预设距离L1的n倍，n为正整数，将承载基板与阵列基板对向设置转移微型发光二极管，只需要转移n次即可将承载基板所有的微型发光二极管转移至阵列基板上，可以极大的提升转移效率，减小资源消耗。\n\n[0086]以上对本申请实施例所提供的一种微型发光二极管转移方法及显示面板制造方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10921, 23975, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种微LED显示面板及其制备方法。\n\n背景技术\n\n[0002]MicroLED和MiniLED等微LED显示技术已经发展成未来显示技术的热点之一，和目前的LCD以及OLED显示器件相比，微LED显示技术具有反应快、高色域、高像素密度和低能耗等优势。在微LED显示面板的制备过程中，需要将巨量的LED灯珠转移至背板上，LED灯珠转移至背板之前，需要先将锡膏印刷于背板上的焊盘表面后，随后利用锡膏将LED灯珠焊接至焊盘上。\n\n[0003]然而，由于不同的微LED显示面板需要不同的工艺需求，导致微LED显示面板上的焊盘的制备材料不同，从而导致某些种类的微LED显示面板中锡膏容易从焊盘上脱落，造成LED灯珠脱落。\n\n发明内容\n\n[0004]本申请实施例提供一种微LED显示面板及其制备方法，可以解决某些种类的微LED显示面板中锡膏容易从焊盘上脱落，造成LED灯珠脱落的问题。\n\n[0005]第一方面，本申请实施例提供一种微LED显示面板，包括：\n\n[0006]衬底基板；\n\n[0007]设置于所述衬底基板一侧的阵列层；\n\n[0008]设置于所述阵列层远离所述衬底基板的一侧的焊盘，所述焊盘上设置有凹槽；\n\n[0009]其中，所述焊盘远离所述阵列层的一侧设置有锡膏层，所述锡膏层的部分位于所述凹槽中；所述凹槽的顶侧开口在所述衬底基板上的正投影的面积，小于所述凹槽的底侧在所述衬底基板上的正投影的面积。\n\n[0010]可选的，在本申请的一些实施例中，所述凹槽的横截面的形状为正梯形，所述凹槽的横截面与所述衬底基板垂直。\n\n[0011]可选的，在本申请的一些实施例中，所述凹槽的纵截面的形状为正梯形，所述凹槽的纵截面与所述衬底基板垂直。\n\n[0012]可选的，在本申请的一些实施例中，所述凹槽的整体形状为圆台状或棱台状。\n\n[0013]可选的，在本申请的一些实施例中，所述锡膏层与所述焊盘化学键合连接。\n\n[0014]第二方面，本申请实施例还提供一种微LED显示面板的制备方法，所述微LED显示面板的制备方法包括：\n\n[0015]S10、在衬底基板的一侧形成阵列层；\n\n[0016]S20、在阵列层远离衬底基板的一侧形成焊盘，所述焊盘上设置有凹槽；所述凹槽的顶侧开口在所述衬底基板上的正投影的面积，小于所述凹槽的底侧在所述衬底基板上的正投影的面积；\n\n[0017]S30、在所述焊盘远离所述阵列层的一侧形成锡膏层，锡膏层的部分形成于凹槽中。\n\n[0018]可选的，在本申请的一些实施例中，所述步骤S20包括：\n\n[0019]S21、在所述阵列层的一侧利用光阻材料形成光阻层；\n\n[0020]S22、对所述光阻层进行图案化，形成多个相间隔的光阻柱；所述光阻柱的顶面在所述衬底基板上的正投影的面积，小于所述光阻柱的底面在所述衬底基板上的正投影的面积；\n\n[0021]S23、在相邻两所述光阻柱之间的间隙处填充导电材料，以形成所述焊盘；\n\n[0022]S24、去除所述光阻柱。\n\n[0023]可选的，在本申请的一些实施例中，在所述步骤S22之后，并且所述步骤S23之前，所述步骤S20还包括：\n\n[0024]S25、使用氧气等离子体对所述光阻柱进行表面处理，以在所述光阻柱的表面形成绒毛状结构。\n\n[0025]可选的，在本申请的一些实施例中，所述焊盘的厚度小于所述光阻柱的厚度。\n\n[0026]可选的，在本申请的一些实施例中，在所述步骤S30之后，所述微LED显示面板的制备方法还包括：\n\n[0027]S40、将锡膏层在预设温度下进行热固化，使得所述锡膏层与所述焊盘化学键合连接。\n\n[0028]本申请的有益效果为：通过在焊盘上设置凹槽并对凹槽的形状进行设计，使得在焊盘上形成锡膏层时锡膏层填充于凹槽中的部分卡嵌于凹槽中，从而可以增大锡膏层与焊盘的连接强度，防止锡膏层从焊盘上导致LED灯珠脱落。\n\n附图说明\n\n[0029]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0030]图1是本申请一实施例中微LED显示面板的结构示意图；\n\n[0031]图2是本申请一实施例中焊盘的结构示意图；\n\n[0032]图3是本申请另一实施例中焊盘的结构示意图；\n\n[0033]图4是本申请一实施例中微LED显示面板的结构示意图；\n\n[0034]图5是本申请一实施例中微LED显示面板的制备步骤示意图；\n\n[0035]图6至图11是本申请一实施例中焊盘和锡膏层的制备流程示意图；\n\n[0036]图12至图17为本申请一实施例中微LED显示面板的制备流程示意图。\n\n[0037]附图标记说明：\n\n[0038]10、衬底基板；20、阵列层；21、遮光层；22、第一绝缘层；23、有源层；24、栅极绝缘层；25、栅极金属层；26、第二绝缘层；27、源漏极金属层；28、钝化层；30、焊盘；31、凹槽；40、锡膏层；50、LED灯珠；60、反射层；70、光阻柱。\n\n具体实施方式\n\n[0039]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0040]本申请实施例提供一种微LED显示面板及其制备方法。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0041]本申请实施例提供一种微LED显示面板，如图1至图3所示，所述微LED显示面板包括多个LED灯珠50、衬底基板10、设置于所述衬底基板10一侧的阵列层20，以及，设置于所述阵列层20远离所述衬底基板10的一侧的焊盘30。\n\n[0042]其中，所述焊盘30设置有多个且多个所述焊盘30相间隔，LED灯珠50可以与焊盘30一一对应，并且阵列层20中的驱动晶体管通过对应的焊盘30与LED灯珠50电连接，以控制LED灯珠50开闭。\n\n[0043]具体的，所述焊盘30远离所述阵列层20的一侧设置有锡膏层40，所述锡膏层40的部分位于所述凹槽31中，LED灯珠50的引脚可以通过锡膏层40焊接于焊盘30上，以实现LED灯珠50与阵列层20中的驱动晶体管的电连接，凹槽31可以增加锡膏层40与焊盘30接触面积。\n\n[0044]其中，所述凹槽31的顶侧开口在所述衬底基板10上的正投影的面积，小于所述凹槽31的底侧在所述衬底基板10上的正投影的面积。\n\n[0045]需要说明的是，凹槽31的顶侧开口指的是凹槽31远离所述阵列层20的一侧的开口，凹槽31的底侧指的是凹槽31靠近所述阵列层20的一侧。\n\n[0046]可以理解的是，当凹槽31的顶侧开口的面积小于凹槽31的底侧的面积时，凹槽31的侧壁上必然存在向远离凹槽31的底侧的中心线方向倾斜向下的结构，而锡膏层40填充于凹槽31中的部分与凹槽31相适配，从而使得锡膏层40位于凹槽31中的部分可以卡嵌于凹槽31中，从而可以增大锡膏层40与焊盘30的连接强度，防止锡膏层40从焊盘30上导致LED灯珠50脱落。\n\n[0047]在一实施例中，所述凹槽31的横截面的形状为正梯形，所述凹槽31的横截面与所述衬底基板10垂直。\n\n[0048]需要说明的是，凹槽31的横截面的形状为上底边的长度小于下底边的长度的梯形，从而可以使得锡膏层40位于凹槽31中的部分可以更好卡嵌于凹槽31中，增大锡膏层40与凹槽31的卡合力。\n\n[0049]所述凹槽31的纵截面的形状也可以为正梯形，所述凹槽31的纵截面与所述衬底基板10垂直。\n\n[0050]需要说明的是，参见图2，所述凹槽31的横截面是指平行于剖面A-A的截面，所述凹槽31的纵截面是指平行于剖面B-B的截面，凹槽31的纵截面的形状为上底边的长度小于下底边的长度的梯形，以进一步增大锡膏层40与凹槽31的卡合力。\n\n[0051]可以理解的是，锡膏层40与焊盘30的接触面积越大，锡膏层40与焊盘30的连接强度越大，同时锡膏层40位于凹槽31中的部分与焊盘30的卡合力越大，锡膏层40与焊盘30的连接强度越大。\n\n[0052]因此，本申请中也可以在凹槽31的侧壁上设置凹陷结构，凹陷结构可以包括多个向远离凹槽31的底侧的中心线方向凹陷的凹孔，从而可以增大锡膏层40与焊盘30的接触面积和卡合力，进一步提升锡膏层40与焊盘30的连接强度。\n\n[0053]为了进一步提升锡膏层40与焊盘30的连接强度，还可以对凹槽31的整体形状进行设计，如所述凹槽31的整体形状可以为棱台状(如图2)或圆台状(如图3)，以使得凹槽31的周侧均形成倾斜结构，加强锡膏层40与焊盘30的连接强度，同时形状规则的棱台状和圆台状也不需要改变现有工艺，可以降低生产难度和成本。\n\n[0054]进一步的，所述锡膏层40与所述焊盘30化学键合连接，以进一步加强锡膏层40与焊盘30的连接强度。\n\n[0055]其中，焊盘30的制备材料包括但不限于铝、钛、钼、铝合金、钛合金或钼合金等金属，对锡膏层40进行高温固化时，锡膏层40与采用铝、钛或钼等金属制成的焊盘30可以进行化学键合。\n\n[0056]需要说明的是，焊盘30的制备材料也可以为铜、银、金或氧化铟锡等与锡膏连接性较强的金属。\n\n[0057]具体的，如图2和图3所示，每一所述焊盘30上的凹槽31设置有多个，并且多个所述凹槽31间隔分布以形成网格状结构，凹槽31可以均匀分布或零散分布，在焊盘30上形成锡膏层40时，锡膏填满所有凹槽31，以增强锡膏层40与焊盘30在各个区域的连接强度。\n\n[0058]在一实施例中，如图4所示，所述阵列层20包括设置于所述衬底基板10上的遮光层21、覆盖所述遮光层21的第一绝缘层22、设置于所述第一绝缘层22上的有源层23、设置于所述有源层23上的栅极绝缘层24、设置于所述栅极绝缘层24上的栅极金属层25、覆盖所述有源层23、栅极绝缘层24和所述栅极金属层25的第二绝缘层26、设置于所述第二绝缘层26上的源漏极金属层27以及覆盖所述源漏极金属层27的钝化层28。\n\n[0059]具体的，所述有源层23的制备材料可以为铟镓锌氧化物，所述遮光层21与所述有源层23对应设置，从而利用遮光层21对有源层23进行遮光，防止外界光线照射至有源层23上影响有源层23的正常工作。\n\n[0060]在一实施例中，所述焊盘30设置于所述钝化层28远离所述衬底基板10的一侧上，所述焊盘30通过钝化层28上的过孔与所述源漏极金属层27触接。\n\n[0061]可以理解的是，图4中仅示意了焊盘30为单层膜层结构，在一实施例中，焊盘30也可以为多层膜层层叠形成的膜层结构，如由氧化铟锡层与铜化钼层层叠形成的膜层结构，以在提升锡膏层40与焊盘30的连接强度的同时，提升焊盘30的导电性能，降低电阻。\n\n[0062]在一实施例中，所述微LED显示面板还包括设置于所述钝化层28和所述焊盘30上的反射层60，所述反射层60用于将LED灯珠50向下发出的光线发射，以提升微LED显示面板的光利用率，所述反射层60的制备材料可以为银、铝、白油和白胶中的一种或几种。\n\n[0063]基于上述微LED显示面板，本申请还提供一种微LED显示面板的制备方案，以用于制备上述任一实施例中所述的微LED显示面板。\n\n[0064]具体的，如图5所示，所述微LED显示面板的制备方法包括：\n\n[0065]S10、在衬底基板10的一侧形成阵列层20；\n\n[0066]S20、在阵列层20远离衬底基板10的一侧形成焊盘30，所述焊盘30上设置有凹槽31；所述凹槽31的顶侧开口在所述衬底基板10上的正投影的面积，小于所述凹槽31的底侧在所述衬底基板10上的正投影的面积；\n\n[0067]S30、在所述焊盘30远离所述阵列层20的一侧形成锡膏层40，锡膏层40的部分形成于凹槽31中。\n\n[0068]可以理解的是，在焊盘30上形成锡膏层40时，锡膏为流体状态，流入凹槽31中的锡膏填满凹槽31，而由于凹槽31的顶侧开口的面积小于凹槽31的底侧的面积时，使得凹槽31的侧壁上必然存在向远离凹槽31的底侧的中心线方向倾斜向下的结构，从而使得锡膏层40位于凹槽31中的部分可以卡嵌于凹槽31中，从而可以增大锡膏层40与焊盘30的连接强度，防止锡膏层40从焊盘30上导致LED灯珠50脱落。\n\n[0069]在一实施例中，如图6至图11所示，所述步骤S20包括：\n\n[0070]S21、在所述阵列层20的一侧利用光阻材料形成光阻层；\n\n[0071]S22、对所述光阻层进行图案化，形成多个相间隔的光阻柱70；所述光阻柱70的顶面在所述衬底基板10上的正投影的面积，小于所述光阻柱70的底面在所述衬底基板10上的正投影的面积；\n\n[0072]S23、在相邻两所述光阻柱70之间的间隙处填充导电材料，以形成所述焊盘30；\n\n[0073]S24、去除所述光阻柱70。\n\n[0074]需要说明的是，通过对光阻层进行图案化，以形成预设形状的光阻柱70，从而通过预设形状的光阻柱70，使得焊盘30在成型时形成预设形状的凹槽31。\n\n[0075]其中，所述光阻柱70的横截面的形状可以为正梯形，所述光阻柱70的横截面与所述衬底基板10垂直；所述光阻柱70的纵截面的形状可以为正梯形，所述光阻柱70的纵截面与所述衬底基板10垂直。\n\n[0076]还需要说明的是，所述光阻柱70的整体形状可以为圆台状或棱台状，所述焊盘30可以通过物理气相沉积或蒸镀等方式形成。\n\n[0077]具体的，所述光阻柱70的厚度可以为5～8微米，所述光阻柱70的厚度也可以根据锡膏的粒径和焊盘30的膜厚来决定，一般光阻柱70的厚度比焊盘30的膜厚大2～3微米，以便于焊盘30的成型，同时可以防止焊盘30的厚度大于光阻柱70的厚度时导致凹槽31被导电材料堵塞。\n\n[0078]在一实施例中，在所述步骤S22之后，并且所述步骤S23之前，所述步骤S20还包括：\n\n[0079]S25、使用氧气等离子体对所述光阻柱70进行表面处理，以在所述光阻柱70的表面形成绒毛状结构。\n\n[0080]可以理解的是，所述光阻柱70可以为正性光阻或负性光阻形成，所述光阻柱70的制备材料包括高分子有机材料，一般由树脂、感光剂和溶剂三者混合而成。利用氧气等离子体对光阻柱70进行处理时，可以在光阻柱70的表面形成带有微孔的绒毛状结构，降低光阻材料在焊盘30上的粘附力，同时后续利用蚀刻液去除光阻柱70时，蚀刻液可以与光阻层充分接触，从而可以将光阻柱70去除干净，防止焊盘30的表面有光阻残留。\n\n[0081]其中，氧气等离子体的强度大于6000瓦，以使得形成的绒毛状结构更加蓬松，同时缩短制程时间。\n\n[0082]在一实施例中，在所述步骤S30之后，所述微LED显示面板的制备方法还包括：\n\n[0083]S40、将锡膏层40在预设温度下进行热固化，使得所述锡膏层40与所述焊盘30化学键合连接。\n\n[0084]需要说明的是，预设温度可以为250～280度，在预设温度下对锡膏层40进行热固化时，同时锡膏层40与焊盘30发生化学键合连接，从而进一步增强锡膏层40与焊盘30的连接强度。\n\n[0085]在一实施例中，所述阵列层20包括设置于所述衬底基板10上的遮光层21、覆盖所述遮光层21的第一绝缘层22、设置于所述第一绝缘层22上的有源层23、设置于所述有源层23上的栅极绝缘层24、设置于所述栅极绝缘层24上的栅极金属层25、覆盖所述有源层23、栅极绝缘层24和所述栅极金属层25的第二绝缘层26、设置于所述第二绝缘层26上的源漏极金属层27以及覆盖所述源漏极金属层27的钝化层28。\n\n[0086]具体的，所述有源层23的制备材料可以为铟镓锌氧化物，所述遮光层21与所述有源层23对应设置，从而利用遮光层21对有源层23进行遮光，防止外界光线照射至有源层23上影响有源层23的正常工作。\n\n[0087]在一实施例中，所述焊盘30设置于所述钝化层28远离所述衬底基板10的一侧上，所述焊盘30通过贯穿钝化层28的过孔与所述源漏极金属层27触接。\n\n[0088]在一实施例中，所述微LED显示面板还包括设置于所述钝化层28和所述焊盘30上的反射层60，所述反射层60用于将LED灯珠50向下发出的光线发射，以提升微LED显示面板的光利用率，所述反射层60的制备材料可以为银、铝、白油和白胶中的一种或几种。\n\n[0089]如图12至图17所示，图12至图17为本申请一实施例中微LED显示面板的制备流程示意图。\n\n[0090]如图12所示，在衬底基板10上形成遮光层21，并在所述衬底基板10上形成覆盖所述遮光层21的第一绝缘层22。\n\n[0091]如图13所示，在所述第一栅极绝缘层24上形成有源层23，并在所述有源层23上形成栅极绝缘层24后，在所述栅极绝缘层24上形成栅极金属层25。\n\n[0092]如图14所示，形成覆盖所述有源层23、栅极绝缘层24和所述栅极金属层25的第二绝缘层26，并在所述第二绝缘层26上形成延伸至所述有源层23的表面的搭接孔后，在所述第二绝缘层26上形成填充所述搭接孔的源漏极金属层27，源漏极金属层27通过搭接孔与有源层23触接。\n\n[0093]如图15所示，形成覆盖所述源漏极金属层27的钝化层28，并在所述钝化层28上形成延伸至所述源漏极金属层27的表面的过孔。\n\n[0094]如图16所示，在所述钝化层28上形成带有凹槽31的焊盘30，焊盘30的部分填充于过孔中，焊盘30通过所述过孔与所述源漏极金属层27触接，随后在所述钝化层28和所述焊盘30上形成反射层60。\n\n[0095]如图17所示，在所述焊盘30上形成填充所述凹槽31的锡膏层40，并将LED灯珠50的引脚通过锡膏层40焊接于焊盘30上，以实现LED灯珠50与源漏极金属层27的电连接。\n\n[0096]本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种微LED显示面板及其制备方法。\n\n背景技术\n\n[0002]MicroLED和MiniLED等微LED显示技术已经发展成未来显示技术的热点之一，和目前的LCD以及OLED显示器件相比，微LED显示技术具有反应快、高色域、高像素密度和低能耗等优势。在微LED显示面板的制备过程中，需要将巨量的LED灯珠转移至背板上，LED灯珠转移至背板之前，需要先将锡膏印刷于背板上的焊盘表面后，随后利用锡膏将LED灯珠焊接至焊盘上。\n\n[0003]然而，由于不同的微LED显示面板需要不同的工艺需求，导致微LED显示面板上的焊盘的制备材料不同，从而导致某些种类的微LED显示面板中锡膏容易从焊盘上脱落，造成LED灯珠脱落。\n\n发明内容\n\n[0004]本申请实施例提供一种微LED显示面板及其制备方法，可以解决某些种类的微LED显示面板中锡膏容易从焊盘上脱落，造成LED灯珠脱落的问题。\n\n[0005]第一方面，本申请实施例提供一种微LED显示面板，包括：\n\n[0006]衬底基板；\n\n[0007]设置于所述衬底基板一侧的阵列层；\n\n[0008]设置于所述阵列层远离所述衬底基板的一侧的焊盘，所述焊盘上设置有凹槽；\n\n[0009]其中，所述焊盘远离所述阵列层的一侧设置有锡膏层，所述锡膏层的部分位于所述凹槽中；所述凹槽的顶侧开口在所述衬底基板上的正投影的面积，小于所述凹槽的底侧在所述衬底基板上的正投影的面积。\n\n[0010]可选的，在本申请的一些实施例中，所述凹槽的横截面的形状为正梯形，所述凹槽的横截面与所述衬底基板垂直。\n\n[0011]可选的，在本申请的一些实施例中，所述凹槽的纵截面的形状为正梯形，所述凹槽的纵截面与所述衬底基板垂直。\n\n[0012]可选的，在本申请的一些实施例中，所述凹槽的整体形状为圆台状或棱台状。\n\n[0013]可选的，在本申请的一些实施例中，所述锡膏层与所述焊盘化学键合连接。\n\n[0014]第二方面，本申请实施例还提供一种微LED显示面板的制备方法，所述微LED显示面板的制备方法包括：\n\n[0015]S10、在衬底基板的一侧形成阵列层；\n\n[0016]S20、在阵列层远离衬底基板的一侧形成焊盘，所述焊盘上设置有凹槽；所述凹槽的顶侧开口在所述衬底基板上的正投影的面积，小于所述凹槽的底侧在所述衬底基板上的正投影的面积；\n\n[0017]S30、在所述焊盘远离所述阵列层的一侧形成锡膏层，锡膏层的部分形成于凹槽中。\n\n[0018]可选的，在本申请的一些实施例中，所述步骤S20包括：\n\n[0019]S21、在所述阵列层的一侧利用光阻材料形成光阻层；\n\n[0020]S22、对所述光阻层进行图案化，形成多个相间隔的光阻柱；所述光阻柱的顶面在所述衬底基板上的正投影的面积，小于所述光阻柱的底面在所述衬底基板上的正投影的面积；\n\n[0021]S23、在相邻两所述光阻柱之间的间隙处填充导电材料，以形成所述焊盘；\n\n[0022]S24、去除所述光阻柱。\n\n[0023]可选的，在本申请的一些实施例中，在所述步骤S22之后，并且所述步骤S23之前，所述步骤S20还包括：\n\n[0024]S25、使用氧气等离子体对所述光阻柱进行表面处理，以在所述光阻柱的表面形成绒毛状结构。\n\n[0025]可选的，在本申请的一些实施例中，所述焊盘的厚度小于所述光阻柱的厚度。\n\n[0026]可选的，在本申请的一些实施例中，在所述步骤S30之后，所述微LED显示面板的制备方法还包括：\n\n[0027]S40、将锡膏层在预设温度下进行热固化，使得所述锡膏层与所述焊盘化学键合连接。\n\n[0028]本申请的有益效果为：通过在焊盘上设置凹槽并对凹槽的形状进行设计，使得在焊盘上形成锡膏层时锡膏层填充于凹槽中的部分卡嵌于凹槽中，从而可以增大锡膏层与焊盘的连接强度，防止锡膏层从焊盘上导致LED灯珠脱落。\n\n附图说明\n\n[0029]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0030]图1是本申请一实施例中微LED显示面板的结构示意图；\n\n[0031]图2是本申请一实施例中焊盘的结构示意图；\n\n[0032]图3是本申请另一实施例中焊盘的结构示意图；\n\n[0033]图4是本申请一实施例中微LED显示面板的结构示意图；\n\n[0034]图5是本申请一实施例中微LED显示面板的制备步骤示意图；\n\n[0035]图6至图11是本申请一实施例中焊盘和锡膏层的制备流程示意图；\n\n[0036]图12至图17为本申请一实施例中微LED显示面板的制备流程示意图。\n\n[0037]附图标记说明：\n\n[0038]10、衬底基板；20、阵列层；21、遮光层；22、第一绝缘层；23、有源层；24、栅极绝缘层；25、栅极金属层；26、第二绝缘层；27、源漏极金属层；28、钝化层；30、焊盘；31、凹槽；40、锡膏层；50、LED灯珠；60、反射层；70、光阻柱。\n\n具体实施方式\n\n[0039]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0040]本申请实施例提供一种微LED显示面板及其制备方法。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0041]本申请实施例提供一种微LED显示面板，如图1至图3所示，所述微LED显示面板包括多个LED灯珠50、衬底基板10、设置于所述衬底基板10一侧的阵列层20，以及，设置于所述阵列层20远离所述衬底基板10的一侧的焊盘30。\n\n[0042]其中，所述焊盘30设置有多个且多个所述焊盘30相间隔，LED灯珠50可以与焊盘30一一对应，并且阵列层20中的驱动晶体管通过对应的焊盘30与LED灯珠50电连接，以控制LED灯珠50开闭。\n\n[0043]具体的，所述焊盘30远离所述阵列层20的一侧设置有锡膏层40，所述锡膏层40的部分位于所述凹槽31中，LED灯珠50的引脚可以通过锡膏层40焊接于焊盘30上，以实现LED灯珠50与阵列层20中的驱动晶体管的电连接，凹槽31可以增加锡膏层40与焊盘30接触面积。\n\n[0044]其中，所述凹槽31的顶侧开口在所述衬底基板10上的正投影的面积，小于所述凹槽31的底侧在所述衬底基板10上的正投影的面积。\n\n[0045]需要说明的是，凹槽31的顶侧开口指的是凹槽31远离所述阵列层20的一侧的开口，凹槽31的底侧指的是凹槽31靠近所述阵列层20的一侧。\n\n[0046]可以理解的是，当凹槽31的顶侧开口的面积小于凹槽31的底侧的面积时，凹槽31的侧壁上必然存在向远离凹槽31的底侧的中心线方向倾斜向下的结构，而锡膏层40填充于凹槽31中的部分与凹槽31相适配，从而使得锡膏层40位于凹槽31中的部分可以卡嵌于凹槽31中，从而可以增大锡膏层40与焊盘30的连接强度，防止锡膏层40从焊盘30上导致LED灯珠50脱落。\n\n[0047]在一实施例中，所述凹槽31的横截面的形状为正梯形，所述凹槽31的横截面与所述衬底基板10垂直。\n\n[0048]需要说明的是，凹槽31的横截面的形状为上底边的长度小于下底边的长度的梯形，从而可以使得锡膏层40位于凹槽31中的部分可以更好卡嵌于凹槽31中，增大锡膏层40与凹槽31的卡合力。\n\n[0049]所述凹槽31的纵截面的形状也可以为正梯形，所述凹槽31的纵截面与所述衬底基板10垂直。\n\n[0050]需要说明的是，参见图2，所述凹槽31的横截面是指平行于剖面A-A的截面，所述凹槽31的纵截面是指平行于剖面B-B的截面，凹槽31的纵截面的形状为上底边的长度小于下底边的长度的梯形，以进一步增大锡膏层40与凹槽31的卡合力。\n\n[0051]可以理解的是，锡膏层40与焊盘30的接触面积越大，锡膏层40与焊盘30的连接强度越大，同时锡膏层40位于凹槽31中的部分与焊盘30的卡合力越大，锡膏层40与焊盘30的连接强度越大。\n\n[0052]因此，本申请中也可以在凹槽31的侧壁上设置凹陷结构，凹陷结构可以包括多个向远离凹槽31的底侧的中心线方向凹陷的凹孔，从而可以增大锡膏层40与焊盘30的接触面积和卡合力，进一步提升锡膏层40与焊盘30的连接强度。\n\n[0053]为了进一步提升锡膏层40与焊盘30的连接强度，还可以对凹槽31的整体形状进行设计，如所述凹槽31的整体形状可以为棱台状(如图2)或圆台状(如图3)，以使得凹槽31的周侧均形成倾斜结构，加强锡膏层40与焊盘30的连接强度，同时形状规则的棱台状和圆台状也不需要改变现有工艺，可以降低生产难度和成本。\n\n[0054]进一步的，所述锡膏层40与所述焊盘30化学键合连接，以进一步加强锡膏层40与焊盘30的连接强度。\n\n[0055]其中，焊盘30的制备材料包括但不限于铝、钛、钼、铝合金、钛合金或钼合金等金属，对锡膏层40进行高温固化时，锡膏层40与采用铝、钛或钼等金属制成的焊盘30可以进行化学键合。\n\n[0056]需要说明的是，焊盘30的制备材料也可以为铜、银、金或氧化铟锡等与锡膏连接性较强的金属。\n\n[0057]具体的，如图2和图3所示，每一所述焊盘30上的凹槽31设置有多个，并且多个所述凹槽31间隔分布以形成网格状结构，凹槽31可以均匀分布或零散分布，在焊盘30上形成锡膏层40时，锡膏填满所有凹槽31，以增强锡膏层40与焊盘30在各个区域的连接强度。\n\n[0058]在一实施例中，如图4所示，所述阵列层20包括设置于所述衬底基板10上的遮光层21、覆盖所述遮光层21的第一绝缘层22、设置于所述第一绝缘层22上的有源层23、设置于所述有源层23上的栅极绝缘层24、设置于所述栅极绝缘层24上的栅极金属层25、覆盖所述有源层23、栅极绝缘层24和所述栅极金属层25的第二绝缘层26、设置于所述第二绝缘层26上的源漏极金属层27以及覆盖所述源漏极金属层27的钝化层28。\n\n[0059]具体的，所述有源层23的制备材料可以为铟镓锌氧化物，所述遮光层21与所述有源层23对应设置，从而利用遮光层21对有源层23进行遮光，防止外界光线照射至有源层23上影响有源层23的正常工作。\n\n[0060]在一实施例中，所述焊盘30设置于所述钝化层28远离所述衬底基板10的一侧上，所述焊盘30通过钝化层28上的过孔与所述源漏极金属层27触接。\n\n[0061]可以理解的是，图4中仅示意了焊盘30为单层膜层结构，在一实施例中，焊盘30也可以为多层膜层层叠形成的膜层结构，如由氧化铟锡层与铜化钼层层叠形成的膜层结构，以在提升锡膏层40与焊盘30的连接强度的同时，提升焊盘30的导电性能，降低电阻。\n\n[0062]在一实施例中，所述微LED显示面板还包括设置于所述钝化层28和所述焊盘30上的反射层60，所述反射层60用于将LED灯珠50向下发出的光线发射，以提升微LED显示面板的光利用率，所述反射层60的制备材料可以为银、铝、白油和白胶中的一种或几种。\n\n[0063]基于上述微LED显示面板，本申请还提供一种微LED显示面板的制备方案，以用于制备上述任一实施例中所述的微LED显示面板。\n\n[0064]具体的，如图5所示，所述微LED显示面板的制备方法包括：\n\n[0065]S10、在衬底基板10的一侧形成阵列层20；\n\n[0066]S20、在阵列层20远离衬底基板10的一侧形成焊盘30，所述焊盘30上设置有凹槽31；所述凹槽31的顶侧开口在所述衬底基板10上的正投影的面积，小于所述凹槽31的底侧在所述衬底基板10上的正投影的面积；\n\n[0067]S30、在所述焊盘30远离所述阵列层20的一侧形成锡膏层40，锡膏层40的部分形成于凹槽31中。\n\n[0068]可以理解的是，在焊盘30上形成锡膏层40时，锡膏为流体状态，流入凹槽31中的锡膏填满凹槽31，而由于凹槽31的顶侧开口的面积小于凹槽31的底侧的面积时，使得凹槽31的侧壁上必然存在向远离凹槽31的底侧的中心线方向倾斜向下的结构，从而使得锡膏层40位于凹槽31中的部分可以卡嵌于凹槽31中，从而可以增大锡膏层40与焊盘30的连接强度，防止锡膏层40从焊盘30上导致LED灯珠50脱落。\n\n[0069]在一实施例中，如图6至图11所示，所述步骤S20包括：\n\n[0070]S21、在所述阵列层20的一侧利用光阻材料形成光阻层；\n\n[0071]S22、对所述光阻层进行图案化，形成多个相间隔的光阻柱70；所述光阻柱70的顶面在所述衬底基板10上的正投影的面积，小于所述光阻柱70的底面在所述衬底基板10上的正投影的面积；\n\n[0072]S23、在相邻两所述光阻柱70之间的间隙处填充导电材料，以形成所述焊盘30；\n\n[0073]S24、去除所述光阻柱70。\n\n[0074]需要说明的是，通过对光阻层进行图案化，以形成预设形状的光阻柱70，从而通过预设形状的光阻柱70，使得焊盘30在成型时形成预设形状的凹槽31。\n\n[0075]其中，所述光阻柱70的横截面的形状可以为正梯形，所述光阻柱70的横截面与所述衬底基板10垂直；所述光阻柱70的纵截面的形状可以为正梯形，所述光阻柱70的纵截面与所述衬底基板10垂直。\n\n[0076]还需要说明的是，所述光阻柱70的整体形状可以为圆台状或棱台状，所述焊盘30可以通过物理气相沉积或蒸镀等方式形成。\n\n[0077]具体的，所述光阻柱70的厚度可以为5～8微米，所述光阻柱70的厚度也可以根据锡膏的粒径和焊盘30的膜厚来决定，一般光阻柱70的厚度比焊盘30的膜厚大2～3微米，以便于焊盘30的成型，同时可以防止焊盘30的厚度大于光阻柱70的厚度时导致凹槽31被导电材料堵塞。\n\n[0078]在一实施例中，在所述步骤S22之后，并且所述步骤S23之前，所述步骤S20还包括：\n\n[0079]S25、使用氧气等离子体对所述光阻柱70进行表面处理，以在所述光阻柱70的表面形成绒毛状结构。\n\n[0080]可以理解的是，所述光阻柱70可以为正性光阻或负性光阻形成，所述光阻柱70的制备材料包括高分子有机材料，一般由树脂、感光剂和溶剂三者混合而成。利用氧气等离子体对光阻柱70进行处理时，可以在光阻柱70的表面形成带有微孔的绒毛状结构，降低光阻材料在焊盘30上的粘附力，同时后续利用蚀刻液去除光阻柱70时，蚀刻液可以与光阻层充分接触，从而可以将光阻柱70去除干净，防止焊盘30的表面有光阻残留。\n\n[0081]其中，氧气等离子体的强度大于6000瓦，以使得形成的绒毛状结构更加蓬松，同时缩短制程时间。\n\n[0082]在一实施例中，在所述步骤S30之后，所述微LED显示面板的制备方法还包括：\n\n[0083]S40、将锡膏层40在预设温度下进行热固化，使得所述锡膏层40与所述焊盘30化学键合连接。\n\n[0084]需要说明的是，预设温度可以为250～280度，在预设温度下对锡膏层40进行热固化时，同时锡膏层40与焊盘30发生化学键合连接，从而进一步增强锡膏层40与焊盘30的连接强度。\n\n[0085]在一实施例中，所述阵列层20包括设置于所述衬底基板10上的遮光层21、覆盖所述遮光层21的第一绝缘层22、设置于所述第一绝缘层22上的有源层23、设置于所述有源层23上的栅极绝缘层24、设置于所述栅极绝缘层24上的栅极金属层25、覆盖所述有源层23、栅极绝缘层24和所述栅极金属层25的第二绝缘层26、设置于所述第二绝缘层26上的源漏极金属层27以及覆盖所述源漏极金属层27的钝化层28。\n\n[0086]具体的，所述有源层23的制备材料可以为铟镓锌氧化物，所述遮光层21与所述有源层23对应设置，从而利用遮光层21对有源层23进行遮光，防止外界光线照射至有源层23上影响有源层23的正常工作。\n\n[0087]在一实施例中，所述焊盘30设置于所述钝化层28远离所述衬底基板10的一侧上，所述焊盘30通过贯穿钝化层28的过孔与所述源漏极金属层27触接。\n\n[0088]在一实施例中，所述微LED显示面板还包括设置于所述钝化层28和所述焊盘30上的反射层60，所述反射层60用于将LED灯珠50向下发出的光线发射，以提升微LED显示面板的光利用率，所述反射层60的制备材料可以为银、铝、白油和白胶中的一种或几种。\n\n[0089]如图12至图17所示，图12至图17为本申请一实施例中微LED显示面板的制备流程示意图。\n\n[0090]如图12所示，在衬底基板10上形成遮光层21，并在所述衬底基板10上形成覆盖所述遮光层21的第一绝缘层22。\n\n[0091]如图13所示，在所述第一栅极绝缘层24上形成有源层23，并在所述有源层23上形成栅极绝缘层24后，在所述栅极绝缘层24上形成栅极金属层25。\n\n[0092]如图14所示，形成覆盖所述有源层23、栅极绝缘层24和所述栅极金属层25的第二绝缘层26，并在所述第二绝缘层26上形成延伸至所述有源层23的表面的搭接孔后，在所述第二绝缘层26上形成填充所述搭接孔的源漏极金属层27，源漏极金属层27通过搭接孔与有源层23触接。\n\n[0093]如图15所示，形成覆盖所述源漏极金属层27的钝化层28，并在所述钝化层28上形成延伸至所述源漏极金属层27的表面的过孔。\n\n[0094]如图16所示，在所述钝化层28上形成带有凹槽31的焊盘30，焊盘30的部分填充于过孔中，焊盘30通过所述过孔与所述源漏极金属层27触接，随后在所述钝化层28和所述焊盘30上形成反射层60。\n\n[0095]如图17所示，在所述焊盘30上形成填充所述凹槽31的锡膏层40，并将LED灯珠50的引脚通过锡膏层40焊接于焊盘30上，以实现LED灯珠50与源漏极金属层27的电连接。\n\n[0096]本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10922, 23976, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种拼接显示面板及显示装置。\n\n背景技术\n\n[0002]Mini-LED(MiniLight-Emitting Diode,迷你发光二极管)为芯片尺寸在200微米以下的产品，市场上将Mini-LED用于液晶显示器显示背光光源，因其可实现超薄，多分区同时利用又是小尺寸芯片产品，能够在显示效果上媲美OLED(OrganicLight-EmittingDiode，有机电致发光二极管)产品，且在材料成本上又能够较OLED更有竞争优势而被提出使用。\n\n[0003]然而受限于现在的打件机台，Mini-LED产品均是打件成小片的灯板，再将小片灯板拼接成大尺寸背光。Mini-LED背光的单片灯板尺寸有限(现行以芯片绑定(Die bonding)机台进行，常规尺寸为270mm*470mm)。在大尺寸电视背光设计中采用Mini-LED灯板时，面临必须采用多片Mini-LED灯板拼接，且每片Mini-LED灯板均绑定有COF(Chip On Film，覆晶薄膜)。这样的拼接技术会导致拼缝的宽度增加以及COF的使用数量增加，进一步导致增加这种背光结构的显示装置的成本的同时影响显示装置的显示效果。\n\n[0004]因此，如何改善现有的拼接显示面板及显示装置，由于采用多个子显示面板拼接，且每片子显示面板均绑定有COF，导致拼缝的宽度增加，进而影响显示装置的显示效果的技术问题，是本领域技术人员目前亟待解决的技术问题。\n\n发明内容\n\n[0005]本申请实施例提供一种拼接显示面板及显示装置，可以减少相邻子显示面板之间拼缝宽度的同时减少了显示装置的生产成本，进一步提高了显示装置的显示效果。\n\n[0006]本申请实施例提供一种拼接显示面板，包括：多个子显示面板及多个连接线；\n\n[0007]其中，每一所述子显示面板包括多个邦定端子，每相邻的两所述子显示面板具有拼接位置，每一所述子显示面板的多个所述邦定端子靠近对应的所述拼接位置，每相邻的两所述子显示面板的位于同一所述拼接位置的相对两侧的多个所述邦定端子之间通过对应的多个所述连接线电性连接。\n\n[0008]可选的，在本申请的一些实施例中，所述拼接显示面板还包括驱动芯片，靠近所述驱动芯片的所述子显示面板的多个所述邦定端子电性连接于所述驱动芯片。\n\n[0009]可选的，在本申请的一些实施例中，每一所述子显示面板的多个所述邦定端子沿列向排列，所述列向平行于对应的所述拼接位置的延伸方向。\n\n[0010]可选的，在本申请的一些实施例中，每一所述子显示面板包括多个发光元件，多个所述邦定端子电性连接于多个所述发光元件。\n\n[0011]可选的，在本申请的一些实施例中，多个所述发光元件沿行向和列向排列，每一所述邦定端子连接于对应行的多个所述发光元件。\n\n[0012]可选的，在本申请的一些实施例中，每一所述子显示面板包括多个扫描线，每一所述扫描线连接于对应行的多个所述发光元件，每一所述扫描线电性连接于对应的所述连接线。\n\n[0013]可选的，在本申请的一些实施例中，所述发光元件为微发光二极管或迷你发光二极管。\n\n[0014]可选的，在本申请的一些实施例中，所述子显示面板包括背板，所述背板至少包括第一导电层、第二导电层、绝缘层以及柔性衬底，所述绝缘层设置在所述第一导电层和所述第二导电层之间，所述第一导电层和所述第二导电层通过所述绝缘层的通孔进行电连接。\n\n[0015]可选的，在本申请的一些实施例中，所述连接线的线宽为0.1mm。\n\n[0016]相应的，本申请实施例还提供一种显示装置，包括如上任一项所述的拼接显示面板。\n\n[0017]本申请实施例提供的拼接显示面板及显示装置，将相邻两个子显示面板上的多个邦定端子通过连接线一行行对应电性连接，且在多个拼接的子显示面板中仅设置一个COF，减少了相邻两个子显示面板之间的拼缝宽度，进一步提高了显示装置的显示效果。\n\n附图说明\n\n[0018]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1是本申请实施例提供的拼接显示面板的平面示意图；\n\n[0020]图2是本申请实施例提供的拼接显示面板的截面示意图；\n\n[0021]图3是图2中A处的平面区域示意图。\n\n具体实施方式\n\n[0022]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0023]本申请实施例提供一种拼接显示面板及显示装置。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。另外，在本申请的描述中，术语“包括”是指“包括但不限于”。用语第一、第二、第三等仅仅作为标示使用，并没有强加数字要求或建立顺序。本发明的各种实施例可以以一个范围的型式存在；应当理解，以一范围型式的描述仅仅是因为方便及简洁，不应理解为对本发明范围的硬性限制；因此，应当认为所述的范围描述已经具体公开所有可能的子范围以及该范围内的单一数值。例如，应当认为从1到6的范围描述已经具体公开子范围，例如从1到3，从1到4，从1到5，从2到4，从2到6，从3到6等，以及所数范围内的单一数字，例如1、2、3、4、5及6，此不管范围为何皆适用。另外，每当在本文中指出数值范围，是指包括所指范围内的任何引用的数字(分数或整数)。\n\n[0024]本申请实施例针对现有的拼接显示面板及显示装置，由于采用多片子显示面板拼接，且每个子显示面板均绑定有COF，导致拼接位置的宽度增加，进而影响显示装置的显示效果的技术问题，本申请实施例能够解决上述技术问题。\n\n[0025]如图1所示，是本申请实施例提供的拼接显示面板的平面示意图；如图2所示，是本申请实施例提供的拼接显示面板的截面示意图；由图1以及图2可知，所述拼接显示面板包括多个间隔设置的子显示面板，相邻的第一子显示面板11以及第二子显示面板12之间设有拼接位置13，所述第一子显示面板11靠近所述拼接位置13的边缘位置设置有多个第一邦定端子112，所述第二子显示面板12靠近所述拼接位置13的边缘位置设置有多个第二邦定端子122；多个所述第一邦定端子112位于所述第一子显示面板11的绑定区(bonding area),多个所述第二邦定端子122位于所述第二子显示面板12的绑定区。\n\n[0026]其中，同一所述拼接位置13两侧的多个所述第一邦定端子112与多个所述第二邦定端子122之间通过对应的多个所述连接线20电性连接。\n\n[0027]可选的，在本申请的一些实施例中，每一所述子显示面板的多个邦定端子沿列向排列，所述列向平行于对应的所述拼接位置13的延伸方向；所述拼接位置13的延伸方向与所述子显示面板的短边平行。即，所述第一子显示面板11上的多个所述第一邦定端子112沿着所述第一子显示面板11的短边方向排成一列，所述第二子显示面板12上的多个所述第二邦定端子122沿着所述第二子显示面板12的短边方向排成一列。\n\n[0028]可选的，在本申请的一些实施例中，所述第一子显示面板11(所述第二子显示面板12)包括背板，所述背板内部设置有第一导电层以及第二导电层，所述第一导电层与所述第二导电层电连接。\n\n[0029]具体地，所述背板的柔性衬底的材质可以采用无色聚酰亚胺(PI)、聚碳酸酯(PC)、聚降冰片烯(PNB)以及聚对苯二甲酸乙二醇酯(PET)中的一种。其中，所述柔性衬底为膜材堆叠结构，所述柔性衬底的厚度范围为0.02-0.2mm，进一步的，所述柔性衬底的厚度范围为0.05-0.18mm，还可以具体为0.11mm、0.15mm等等，此处不做进一步限定。\n\n[0030]可选的，在本申请的一些实施例中，每一所述子显示面板包括多个发光元件，多个所述邦定端子电性连接于多个所述发光元件。其中，多个所述发光元件沿行向和列向排列，每一所述邦定端子连接于对应行的多个所述发光元件。\n\n[0031]可选的，在本申请的一些实施例中，相邻两所述第一发光元件111之间的间距范围为0.49mm～8.9mm；相邻两所述第二发光元件121之间的间距范围为0.49mm～8.9mm。\n\n[0032]具体地，所述发光元件为Mini-LED或者Micro-LED(微发光二极管)。\n\n[0033]可选的，在本申请的一些实施例中，所述背板至少包括第一导电层、第二导电层、绝缘层以及柔性衬底，所述绝缘层设置在所述第一导电层和所述第二导电层之间，所述第一导电层和所述第二导电层通过所述绝缘层的通孔进行电连接；而所述第一导电层设置在所述背板的内部，所述第二导电层设置在所述背板的外部，且朝向所述发光元件。而其他实施例中，还可以包括多层导电层，实现不同层之间的电连接关系，再或者也不包括柔性衬底。\n\n[0034]可选的，在本申请的一些实施例中，所述第一子显示面板11上还设置有第一驱动信号线113以及第一发光元件111，所述第二子显示面板12上还设置有第二驱动信号线123以及第二发光元件121；其中，所述第一子显示面板11内的所述第一导电层连接所述第一驱动信号线113，所述第一子显示面板11内的所述第二导电层连接所述第一发光元件111；所述第二子显示面板12内的所述第一导电层连接所述第二驱动信号线123，所述第二子显示面板12内的所述第二导电层连接所述第二发光元件121。\n\n[0035]可选的，在本申请的一些实施例中，所述第一驱动信号线113位于所述第一子显示面板11的绑定区，所述第一驱动信号线113的一端与所述第一邦定端子112电性相连，所述第一驱动信号线113的相对另一端经过所述拼接位置13弯折至所述第一子显示面板11的侧面；所述第二驱动信号线123位于所述第二子显示面板12的绑定区，所述第二驱动信号线123的一端与所述第二邦定端子122电性相连，所述第二驱动信号线123的相对另一端经过所述拼接位置13弯折至所述第二子显示面板12的侧面。\n\n[0036]具体地，所述拼接显示面板还包括驱动芯片，靠近所述驱动芯片的所述子显示面板的多个所述邦定端子电性连接于所述驱动芯片。\n\n[0037]可选的，在本申请的一些实施例中，所述拼接显示面板仅包括一层覆晶薄膜(COF)，所述覆晶薄膜可以位于任意一个所述子显示面板上；在图2中，覆晶薄膜30设置于所述第一子显示面板11上，所述覆晶薄膜30上封装有驱动芯片(IC)，所述覆晶薄膜30的一端与所述第一驱动信号线113电性连接，所述覆晶薄膜30的相对另一端与柔性电路板40电连接。\n\n[0038]进一步地，所述驱动信号线包括扫描线以及数据线，每一扫描线连接于对应行的多个所述发光元件，每一所述扫描线电性连接于对应的所述连接线20。\n\n[0039]由于通过所述连接线20将相邻两块所述子显示面板上的扫描线一行行对应电性连接，从每一所述子显示面板的另一侧通过扫描线将驱动讯号输入到面内，进而驱动对应的子显示面板正常工作，如此可节约COF以及IC等辅材，避免了COF弯折不充分造成的空间浪费，进而可减小拼接位置，降低成本。\n\n[0040]可选的，在本申请的一些实施例中，所述连接线的线宽为0.1mm。\n\n[0041]具体地，制备所述连接线的金属导线工艺目前已应用于正装LED芯片与焊盘位置的电气连接，工艺较为成熟。同时由于Mini-LED的基板PPI(Pixels Per Inch，像素密度)一般较小([0042]其中，所述第一发光元件111或者所述第二发光元件121与对应所述子显示面板上的邦定端子通过锡膏、银胶、异方性导电胶膜ACF等其他导电绑定方式进行绑定，从而实现所述第一发光元件111或者所述第二发光元件121一一固定并与驱动信号线电性连接，且具体还可以采用典型的COB(chip on board，板上芯片封装)工艺制备，在此不作赘述。\n\n[0043]如图3所示，是图2中A处的平面区域示意图。其中，所述第二驱动信号线123以及所述第二邦定端子122均位于绑定区102，所述绑定区102与所述第二子显示面板12的背光区101相邻。因此，本申请实施例的每一所述子显示面板相比现有技术来说均未设置Fanout区(焊接走线区)，每一所述子显示面板的驱动信号线均匀汇聚于所述绑定区102，减小了相邻子显示面板之间的拼接位置。\n\n[0044]可选的，在本申请的一些实施例中，每一所述绑定区102的宽度范围为400～500um。\n\n[0045]可选的，在本申请的一些实施例中，所述拼接显示面板通过直下式背光，将微发光二极管阵列排布于所述子显示面板的背光区，用以给对应的显示装置提供背光源。\n\n[0046]可选的，在本申请的一些实施例中，所述拼接显示面板还包括位于所述发光元件上方的扩散膜以及增亮膜。其中，所述扩散膜在所述拼接显示面板中主要起到修正扩散角度的作用，会使光辐射面积增大。所述微发光二极管的发光光源经所述扩散膜扩散之后，能变成面积更大，均匀度较好，色度稳定的2次光源。其中，所述扩散膜的基本结构是在透明基材上如PET(聚对苯二甲酸乙二醇酯)两面涂光学散光颗粒，其制备方法及过程可以参照现有技术中制备显示面板的方法及工艺，此处本申请不做限定。\n\n[0047]由于经过所述扩散膜的光源降低了单位面积的光强度，不能满足显示面板的亮度要求，从而需要增加亮度的薄膜，即增亮膜。其中，棱镜膜是当今使用最广泛的增亮产品，因此棱镜膜是增亮膜的一种，棱镜膜是一层透明的塑料薄膜，厚度在50到300微米之间，在薄膜的上表面均匀而整齐的覆盖着一层棱镜结构；棱镜膜放置在拼接显示面板的扩散膜和液晶模组之间，它的作用是改善光的角分布，它可以将从扩散膜射出的均匀地向各个角度发散的光汇聚到轴向角度上，即正视角度上，在不增加出射总光通量的情况下提高轴向亮度。\n\n[0048]本申请实施例还提供了一种显示装置，所述显示装置包括上述实施例所述的显示面板。其中，所述显示装置可以为手机、电脑、电视机和智能穿戴显示设备等，本实施例对此不作特殊限定。\n\n[0049]综上所述，本申请实施例提供的拼接显示面板及显示装置，将相邻两个子显示面板上的多个邦定端子通过连接线一行行对应电性连接，且在多个拼接的子显示面板中仅设置一个COF，减少了相邻两个子显示面板之间的拼缝宽度，进一步提高了显示装置的显示效果。\n\n[0050]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0051]以上对本申请实施例所提供的一种拼接显示面板及显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种拼接显示面板及显示装置。\n\n背景技术\n\n[0002]Mini-LED(MiniLight-Emitting Diode,迷你发光二极管)为芯片尺寸在200微米以下的产品，市场上将Mini-LED用于液晶显示器显示背光光源，因其可实现超薄，多分区同时利用又是小尺寸芯片产品，能够在显示效果上媲美OLED(OrganicLight-EmittingDiode，有机电致发光二极管)产品，且在材料成本上又能够较OLED更有竞争优势而被提出使用。\n\n[0003]然而受限于现在的打件机台，Mini-LED产品均是打件成小片的灯板，再将小片灯板拼接成大尺寸背光。Mini-LED背光的单片灯板尺寸有限(现行以芯片绑定(Die bonding)机台进行，常规尺寸为270mm*470mm)。在大尺寸电视背光设计中采用Mini-LED灯板时，面临必须采用多片Mini-LED灯板拼接，且每片Mini-LED灯板均绑定有COF(Chip On Film，覆晶薄膜)。这样的拼接技术会导致拼缝的宽度增加以及COF的使用数量增加，进一步导致增加这种背光结构的显示装置的成本的同时影响显示装置的显示效果。\n\n[0004]因此，如何改善现有的拼接显示面板及显示装置，由于采用多个子显示面板拼接，且每片子显示面板均绑定有COF，导致拼缝的宽度增加，进而影响显示装置的显示效果的技术问题，是本领域技术人员目前亟待解决的技术问题。\n\n发明内容\n\n[0005]本申请实施例提供一种拼接显示面板及显示装置，可以减少相邻子显示面板之间拼缝宽度的同时减少了显示装置的生产成本，进一步提高了显示装置的显示效果。\n\n[0006]本申请实施例提供一种拼接显示面板，包括：多个子显示面板及多个连接线；\n\n[0007]其中，每一所述子显示面板包括多个邦定端子，每相邻的两所述子显示面板具有拼接位置，每一所述子显示面板的多个所述邦定端子靠近对应的所述拼接位置，每相邻的两所述子显示面板的位于同一所述拼接位置的相对两侧的多个所述邦定端子之间通过对应的多个所述连接线电性连接。\n\n[0008]可选的，在本申请的一些实施例中，所述拼接显示面板还包括驱动芯片，靠近所述驱动芯片的所述子显示面板的多个所述邦定端子电性连接于所述驱动芯片。\n\n[0009]可选的，在本申请的一些实施例中，每一所述子显示面板的多个所述邦定端子沿列向排列，所述列向平行于对应的所述拼接位置的延伸方向。\n\n[0010]可选的，在本申请的一些实施例中，每一所述子显示面板包括多个发光元件，多个所述邦定端子电性连接于多个所述发光元件。\n\n[0011]可选的，在本申请的一些实施例中，多个所述发光元件沿行向和列向排列，每一所述邦定端子连接于对应行的多个所述发光元件。\n\n[0012]可选的，在本申请的一些实施例中，每一所述子显示面板包括多个扫描线，每一所述扫描线连接于对应行的多个所述发光元件，每一所述扫描线电性连接于对应的所述连接线。\n\n[0013]可选的，在本申请的一些实施例中，所述发光元件为微发光二极管或迷你发光二极管。\n\n[0014]可选的，在本申请的一些实施例中，所述子显示面板包括背板，所述背板至少包括第一导电层、第二导电层、绝缘层以及柔性衬底，所述绝缘层设置在所述第一导电层和所述第二导电层之间，所述第一导电层和所述第二导电层通过所述绝缘层的通孔进行电连接。\n\n[0015]可选的，在本申请的一些实施例中，所述连接线的线宽为0.1mm。\n\n[0016]相应的，本申请实施例还提供一种显示装置，包括如上任一项所述的拼接显示面板。\n\n[0017]本申请实施例提供的拼接显示面板及显示装置，将相邻两个子显示面板上的多个邦定端子通过连接线一行行对应电性连接，且在多个拼接的子显示面板中仅设置一个COF，减少了相邻两个子显示面板之间的拼缝宽度，进一步提高了显示装置的显示效果。\n\n附图说明\n\n[0018]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1是本申请实施例提供的拼接显示面板的平面示意图；\n\n[0020]图2是本申请实施例提供的拼接显示面板的截面示意图；\n\n[0021]图3是图2中A处的平面区域示意图。\n\n具体实施方式\n\n[0022]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0023]本申请实施例提供一种拼接显示面板及显示装置。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。另外，在本申请的描述中，术语“包括”是指“包括但不限于”。用语第一、第二、第三等仅仅作为标示使用，并没有强加数字要求或建立顺序。本发明的各种实施例可以以一个范围的型式存在；应当理解，以一范围型式的描述仅仅是因为方便及简洁，不应理解为对本发明范围的硬性限制；因此，应当认为所述的范围描述已经具体公开所有可能的子范围以及该范围内的单一数值。例如，应当认为从1到6的范围描述已经具体公开子范围，例如从1到3，从1到4，从1到5，从2到4，从2到6，从3到6等，以及所数范围内的单一数字，例如1、2、3、4、5及6，此不管范围为何皆适用。另外，每当在本文中指出数值范围，是指包括所指范围内的任何引用的数字(分数或整数)。\n\n[0024]本申请实施例针对现有的拼接显示面板及显示装置，由于采用多片子显示面板拼接，且每个子显示面板均绑定有COF，导致拼接位置的宽度增加，进而影响显示装置的显示效果的技术问题，本申请实施例能够解决上述技术问题。\n\n[0025]如图1所示，是本申请实施例提供的拼接显示面板的平面示意图；如图2所示，是本申请实施例提供的拼接显示面板的截面示意图；由图1以及图2可知，所述拼接显示面板包括多个间隔设置的子显示面板，相邻的第一子显示面板11以及第二子显示面板12之间设有拼接位置13，所述第一子显示面板11靠近所述拼接位置13的边缘位置设置有多个第一邦定端子112，所述第二子显示面板12靠近所述拼接位置13的边缘位置设置有多个第二邦定端子122；多个所述第一邦定端子112位于所述第一子显示面板11的绑定区(bonding area),多个所述第二邦定端子122位于所述第二子显示面板12的绑定区。\n\n[0026]其中，同一所述拼接位置13两侧的多个所述第一邦定端子112与多个所述第二邦定端子122之间通过对应的多个所述连接线20电性连接。\n\n[0027]可选的，在本申请的一些实施例中，每一所述子显示面板的多个邦定端子沿列向排列，所述列向平行于对应的所述拼接位置13的延伸方向；所述拼接位置13的延伸方向与所述子显示面板的短边平行。即，所述第一子显示面板11上的多个所述第一邦定端子112沿着所述第一子显示面板11的短边方向排成一列，所述第二子显示面板12上的多个所述第二邦定端子122沿着所述第二子显示面板12的短边方向排成一列。\n\n[0028]可选的，在本申请的一些实施例中，所述第一子显示面板11(所述第二子显示面板12)包括背板，所述背板内部设置有第一导电层以及第二导电层，所述第一导电层与所述第二导电层电连接。\n\n[0029]具体地，所述背板的柔性衬底的材质可以采用无色聚酰亚胺(PI)、聚碳酸酯(PC)、聚降冰片烯(PNB)以及聚对苯二甲酸乙二醇酯(PET)中的一种。其中，所述柔性衬底为膜材堆叠结构，所述柔性衬底的厚度范围为0.02-0.2mm，进一步的，所述柔性衬底的厚度范围为0.05-0.18mm，还可以具体为0.11mm、0.15mm等等，此处不做进一步限定。\n\n[0030]可选的，在本申请的一些实施例中，每一所述子显示面板包括多个发光元件，多个所述邦定端子电性连接于多个所述发光元件。其中，多个所述发光元件沿行向和列向排列，每一所述邦定端子连接于对应行的多个所述发光元件。\n\n[0031]可选的，在本申请的一些实施例中，相邻两所述第一发光元件111之间的间距范围为0.49mm～8.9mm；相邻两所述第二发光元件121之间的间距范围为0.49mm～8.9mm。\n\n[0032]具体地，所述发光元件为Mini-LED或者Micro-LED(微发光二极管)。\n\n[0033]可选的，在本申请的一些实施例中，所述背板至少包括第一导电层、第二导电层、绝缘层以及柔性衬底，所述绝缘层设置在所述第一导电层和所述第二导电层之间，所述第一导电层和所述第二导电层通过所述绝缘层的通孔进行电连接；而所述第一导电层设置在所述背板的内部，所述第二导电层设置在所述背板的外部，且朝向所述发光元件。而其他实施例中，还可以包括多层导电层，实现不同层之间的电连接关系，再或者也不包括柔性衬底。\n\n[0034]可选的，在本申请的一些实施例中，所述第一子显示面板11上还设置有第一驱动信号线113以及第一发光元件111，所述第二子显示面板12上还设置有第二驱动信号线123以及第二发光元件121；其中，所述第一子显示面板11内的所述第一导电层连接所述第一驱动信号线113，所述第一子显示面板11内的所述第二导电层连接所述第一发光元件111；所述第二子显示面板12内的所述第一导电层连接所述第二驱动信号线123，所述第二子显示面板12内的所述第二导电层连接所述第二发光元件121。\n\n[0035]可选的，在本申请的一些实施例中，所述第一驱动信号线113位于所述第一子显示面板11的绑定区，所述第一驱动信号线113的一端与所述第一邦定端子112电性相连，所述第一驱动信号线113的相对另一端经过所述拼接位置13弯折至所述第一子显示面板11的侧面；所述第二驱动信号线123位于所述第二子显示面板12的绑定区，所述第二驱动信号线123的一端与所述第二邦定端子122电性相连，所述第二驱动信号线123的相对另一端经过所述拼接位置13弯折至所述第二子显示面板12的侧面。\n\n[0036]具体地，所述拼接显示面板还包括驱动芯片，靠近所述驱动芯片的所述子显示面板的多个所述邦定端子电性连接于所述驱动芯片。\n\n[0037]可选的，在本申请的一些实施例中，所述拼接显示面板仅包括一层覆晶薄膜(COF)，所述覆晶薄膜可以位于任意一个所述子显示面板上；在图2中，覆晶薄膜30设置于所述第一子显示面板11上，所述覆晶薄膜30上封装有驱动芯片(IC)，所述覆晶薄膜30的一端与所述第一驱动信号线113电性连接，所述覆晶薄膜30的相对另一端与柔性电路板40电连接。\n\n[0038]进一步地，所述驱动信号线包括扫描线以及数据线，每一扫描线连接于对应行的多个所述发光元件，每一所述扫描线电性连接于对应的所述连接线20。\n\n[0039]由于通过所述连接线20将相邻两块所述子显示面板上的扫描线一行行对应电性连接，从每一所述子显示面板的另一侧通过扫描线将驱动讯号输入到面内，进而驱动对应的子显示面板正常工作，如此可节约COF以及IC等辅材，避免了COF弯折不充分造成的空间浪费，进而可减小拼接位置，降低成本。\n\n[0040]可选的，在本申请的一些实施例中，所述连接线的线宽为0.1mm。\n\n[0041]具体地，制备所述连接线的金属导线工艺目前已应用于正装LED芯片与焊盘位置的电气连接，工艺较为成熟。同时由于Mini-LED的基板PPI(Pixels Per Inch，像素密度)一般较小([0042]其中，所述第一发光元件111或者所述第二发光元件121与对应所述子显示面板上的邦定端子通过锡膏、银胶、异方性导电胶膜ACF等其他导电绑定方式进行绑定，从而实现所述第一发光元件111或者所述第二发光元件121一一固定并与驱动信号线电性连接，且具体还可以采用典型的COB(chip on board，板上芯片封装)工艺制备，在此不作赘述。\n\n[0043]如图3所示，是图2中A处的平面区域示意图。其中，所述第二驱动信号线123以及所述第二邦定端子122均位于绑定区102，所述绑定区102与所述第二子显示面板12的背光区101相邻。因此，本申请实施例的每一所述子显示面板相比现有技术来说均未设置Fanout区(焊接走线区)，每一所述子显示面板的驱动信号线均匀汇聚于所述绑定区102，减小了相邻子显示面板之间的拼接位置。\n\n[0044]可选的，在本申请的一些实施例中，每一所述绑定区102的宽度范围为400～500um。\n\n[0045]可选的，在本申请的一些实施例中，所述拼接显示面板通过直下式背光，将微发光二极管阵列排布于所述子显示面板的背光区，用以给对应的显示装置提供背光源。\n\n[0046]可选的，在本申请的一些实施例中，所述拼接显示面板还包括位于所述发光元件上方的扩散膜以及增亮膜。其中，所述扩散膜在所述拼接显示面板中主要起到修正扩散角度的作用，会使光辐射面积增大。所述微发光二极管的发光光源经所述扩散膜扩散之后，能变成面积更大，均匀度较好，色度稳定的2次光源。其中，所述扩散膜的基本结构是在透明基材上如PET(聚对苯二甲酸乙二醇酯)两面涂光学散光颗粒，其制备方法及过程可以参照现有技术中制备显示面板的方法及工艺，此处本申请不做限定。\n\n[0047]由于经过所述扩散膜的光源降低了单位面积的光强度，不能满足显示面板的亮度要求，从而需要增加亮度的薄膜，即增亮膜。其中，棱镜膜是当今使用最广泛的增亮产品，因此棱镜膜是增亮膜的一种，棱镜膜是一层透明的塑料薄膜，厚度在50到300微米之间，在薄膜的上表面均匀而整齐的覆盖着一层棱镜结构；棱镜膜放置在拼接显示面板的扩散膜和液晶模组之间，它的作用是改善光的角分布，它可以将从扩散膜射出的均匀地向各个角度发散的光汇聚到轴向角度上，即正视角度上，在不增加出射总光通量的情况下提高轴向亮度。\n\n[0048]本申请实施例还提供了一种显示装置，所述显示装置包括上述实施例所述的显示面板。其中，所述显示装置可以为手机、电脑、电视机和智能穿戴显示设备等，本实施例对此不作特殊限定。\n\n[0049]综上所述，本申请实施例提供的拼接显示面板及显示装置，将相邻两个子显示面板上的多个邦定端子通过连接线一行行对应电性连接，且在多个拼接的子显示面板中仅设置一个COF，减少了相邻两个子显示面板之间的拼缝宽度，进一步提高了显示装置的显示效果。\n\n[0050]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0051]以上对本申请实施例所提供的一种拼接显示面板及显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10923, 23977, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种背光模组及显示装置。\n\n背景技术\n\n[0002]背光技术在液晶显示领域有着广泛的应用，其依靠背光源可以增加液晶显示屏的亮度。传统背光源大多采用冷阴极管，但是随着LED技术的不断发展，LED因为低功耗、低发热量、亮度高以及寿命长等特点，其将会逐步地取代传统背光源。\n\n[0003]在LED背光工作时，由于LED属于光电元件，其工作过程中有15％-25％的电能可转换为光能，其余大部分的电能几乎都转换成热能，使得LED元件的温度升高，而整个背光系统又处于一个相对密封的空间，如果热量不断积累，当LED元件的温度上升到超过其最大允许温度时，LED元件就会因过热而损坏，进一步地影响产品的使用寿命。\n\n发明内容\n\n[0004]为解决上述技术问题，本发明实施例提供了一种背光模组，包括：\n\n[0005]衬底基板；\n\n[0006]多个光源，间隔设置于所述衬底基板上；\n\n[0007]散热层，设置于所述衬底基板远离所述光源一侧，其中，所述散热层包括至少一个散热空腔，及填充于所述散热空腔内的散热液体。\n\n[0008]根据本发明实施例所提供的背光模组，所述散热层包括散热基板，所述散热基板朝向所述衬底基板一侧设置有至少一个凹部，所述散热基板与所述衬底基板远离所述光源一侧贴合，使所述凹部与所述衬底基板之间形成所述散热空腔。\n\n[0009]根据本发明实施例所提供的背光模组，所述散热基板与所述衬底基板的贴合方式包括焊接或者粘接。\n\n[0010]根据本发明实施例所提供的背光模组，所述光源在所述衬底基板上的正投影与所述散热空腔在所述衬底基板上的正投影至少部分重叠。\n\n[0011]根据本发明实施例所提供的背光模组，所述散热液体的沸点为50-70℃。\n\n[0012]根据本发明实施例所提供的背光模组，所述衬底基板与所述散热基板贴合的一侧对应所述散热空腔的表面形成有多个第一子凸部。\n\n[0013]根据本发明实施例所提供的背光模组，所述散热基板远离所述衬底基板一侧的表面上形成有多个第二子凸部。\n\n[0014]根据本发明实施例所提供的背光模组，所述散热基板的材料包括玻璃、陶瓷或金属。\n\n[0015]根据本发明实施例所提供的背光模组，所述光源为mini LED灯珠。\n\n[0016]另一方面，本发明实施例还提供了一种显示装置，包括如前所述的背光模组。\n\n[0017]本申请的有益效果在于，本发明提供了一种背光模组及显示装置，包括衬底基板、间隔设置于衬底基板上的多个光源，以及设置于衬底基板远离光源一侧的散热层，其中散热层包括至少一个散热空腔，及填充于散热空腔内的散热液体，通过散热液体在液态和气态之间的转化吸收光源产生的热量，提高散热效率，并且通过衬底基板与散热基板贴合的一侧对应散热空腔的表面形成的多个第一子凸部，及散热基板远离衬底基板一侧的表面上形成的多个第二子凸部，可以增加散热面积，进一步提升散热效果。\n\n附图说明\n\n[0018]为了更清楚地说明本申请实施例或现有技术中的技术方案，下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本申请的部分实施例，对于本领域普通技术人员而言，在不付出创造性劳动的前提下，还可以根据这些附图获取其他的附图。\n\n[0019]图1为本发明实施例提供的一种背光模组的结构示意图；\n\n[0020]图2为本发明实施例提供的一种散热层的俯视结构示意图；\n\n[0021]图3为本发明实施例提供的一种散热基板的结构示意图；\n\n[0022]图4为图3中散热基板的部分放大结构示意图；\n\n[0023]图5为本发明实施例提供的一种背光模组的俯视结构示意图。\n\n具体实施方式\n\n[0024]这里所公开的具体结构和功能细节仅仅是代表性的，并且是用于描述本申请的示例性实施例的目的。但是本申请可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。\n\n[0025]在本申请的描述中，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。\n\n[0026]本发明所提到的方向用语，例如[上]、[下]、[内]、[外]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0027]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0028]为了方便对本发明技术方案的理解，下面结合附图及具体实施例对本发明的技术方案进行详细的说明。\n\n[0029]如图1所示，本发明实施例提供一种背光模组1，包括衬底基板10、间隔设置于所述衬底基板10上的多个光源20，以及设置于所述衬底基板10远离所述光源20一侧的散热层30，其中所述散热层30包括至少一个散热空腔，及填充于所述散热空腔内的散热液体34，通过所述散热液体34在液态和气态之间的转化吸收所述光源20产生的热量，提高散热效率。\n\n[0030]所述散热液体34的工作过程如下：当所述背光模组启动后，所述光源20开始发光并产生大量热量，所述光源20产生的热量传导到所述衬底基板10上，由于所述衬底基板10远离所述光源20一侧设置有所述散热层30，其中所述散热层30包括至少一个所述散热空腔，及填充于所述散热空腔内的所述散热液体34，所述散热液体34与所述衬底基板10能够完全无缝隙接触；此时所述散热空腔内的所述散热液体34吸收所述光源20产生的热量，所述散热液体34在受热时极容易汽化，易挥发液体在受热时汽化并吸收热量，将热量传递到所述散热层30背离所述衬底基板10一侧，气体在温度较低的位置凝结，恢复液体状态，从而循环使用。通过所述散热液体34在液体气体液体的循环转换过程中将热量源源不断的传导出来，大幅提升了所述光源20向外的热量传导，防止所述光源20的温度偏高并提升所述背光模组整体的散热效果。\n\n[0031]具体地，所述散热空腔内存储有受热汽化的所述散热液体34，存储于所述散热空腔内的所述液体采用低沸点，高挥发性溶剂。进一步地，所述衬底基板10远离所述光源20一侧设置有导热层，即所述散热层30与所述衬底基板10之间设置所述导热层(图中未示出)，所述导热层采用热界面材料制成，其中热界面材料为粘结固化导热胶、相变材料或导热弹性体材料，优选导热凝胶或硅胶。通过采用导热凝胶或硅胶这些热界面材料形成所述导热层，可以保证所述光源20产生的热量通过所述衬底基板10远离所述光源20一侧的所述导热层有效传递至所述散热空腔内的所述散热液体34。所述光源20产生的热量经过热界面材料传导到所述散热空腔，所述散热空腔内的所述散热液体34受热汽化变成蒸汽，经过蒸汽在所述散热空腔内的循环，将热量快速传递给所述散热层30远离所述衬底基板10一侧，蒸汽在温度较低的位置冷凝变成液体，从而在所述散热空腔内周而复始地完成热量的循环和传递，整套系统是一个可持续的真正实现了循环的散热装置。由于液体的汽化和冷凝过程能够吸收和放出大量的热量，因此散热效率极高，所述光源20产生的热量经过所述散热液体34均匀的传递给所述散热层30远离所述衬底基板10一侧，最终散发到空气中，因而保证所述背光模组整体的温度相对较低，不会产生给用户带来使用发热的体验。\n\n[0032]另一方面，上述方案在有效的降低所述背光模组整体的温度的同时，也减小了所述背光模组中温度分布梯度，有效地避免了所述背光模组内的光学部件因温度梯度变化差异导致的热胀冷缩，减少各部件的内部应力问题的出现。此外，在所述衬底基板10远离所述光源20一侧设置的所述散热层30使所述衬底基板10上的所述光源20产生的热量得到有效的传导，使得控制所述光源20的芯片的温度也能有效的降低，延长了所述光源20的寿命，由于散热效果的提高，所述背光模组也能够使用更大功率的光源。\n\n[0033]一种具体的实施方式中，本发明提供的背光模组，所述散热层30包括散热基板36，所述散热基板36朝向所述衬底基板10一侧设置有至少一个凹部362，所述散热基板36与所述衬底基板10远离所述光源20一侧贴合，使所述凹部362与所述衬底基板10之间形成所述散热空腔。\n\n[0034]本实施例中，在所述衬底基板10远离所述光源20一侧设置的所述散热层30，所述散热层30包括与所述衬底基板10接触设置的散热基板36，具体地，所述散热基板36与所述衬底基板10贴合设置，所述散热基板36朝向所述衬底基板10一侧设置有至少一个凹部362，相应的，所述散热基板36还包括朝向所述衬底基板10一侧与所述凹部362相邻的凸部364，所述凸部364与所述衬底基板10远离所述光源20一侧贴合，使得所述凹部362与所述衬底基板10之间形成密闭的容纳空间，即所述散热空腔。所述散热基板36远离所述衬底基板10一侧的表面裸露于所述背光模组的底部，可以通过显示器件的背板与外界流通的空气快速进行热交换，因此所述光源20散发的热量可快速的通过所述散热基板36散发到外界。相比现有技术，本实施例中的所述背光模组的散热性能提高，有利于提高所述光源20的工作稳定性，延长其使用寿命。\n\n[0035]另一方面，所述散热基板36对所述背光模组的内部结构件起到支撑作用，因此，本实施例提供的所述散热基板36，不仅与所述衬底基板10之间形成所述散热空腔，使所述光源20产生的热量均匀化，防止局部位置温度偏高，还可以作为所述背光模组的支撑零件，进一步提升产品的工艺性能。\n\n[0036]一种具体的实施方式中，本发明提供的背光模组，所述散热基板36与所述衬底基板10的贴合方式包括焊接或者粘接。\n\n[0037]具体的，所述散热基板36与所述衬底基板10贴合设置，所述散热基板36朝向所述衬底基板10一侧设置有至少一个凹部362，相应的，所述散热基板36还包括朝向所述衬底基板10一侧与所述凹部362相邻的凸部364，所述散热基板36的凸部364与所述衬底基板10远离所述光源20一侧焊接或者粘接，使得所述凹部362与所述衬底基板10之间形成密闭的容纳空间，即所述散热空腔；另一方面，所述散热基板36可对所述衬底基板10起到支撑作用，提升产品的工艺性能。\n\n[0038]其中，如图1所示，所述凸部364可以通过导热胶层366与所述衬底基板10连接，使得所述散热基板36贴附在所述衬底基板10上，导热胶层366既可以起到固定所述衬底基板10的作用，另外还可以快速地通过导热胶层366将所述光源20工作时散发的热量传导至所述散热空腔。\n\n[0039]其中，所述散热基板36与所述衬底基板10也可以通过锁螺钉这种可拆卸的连接方式进行连接固定，即使以后出现了所述散热基板36或所述散热液体34需要更换的情况，也可以通过松动锁螺钉很方便地对所述散热基板36或所述散热液体34进行更换。\n\n[0040]如图1所示，本发明提供的背光模组，所述光源20在所述衬底基板10上的正投影与所述散热空腔在所述衬底基板10上的正投影至少部分重叠，具体地，所述背光模组包括衬底基板10、光源20以及散热层30，所述光源20位于所述衬底基板10上，所述散热层30设置在所述衬底基板10远离所述光源20的一侧，即所述衬底基板10作为热传导介质位于所述光源20和所述散热层30之间，将所述光源20散发的热量传导至所述散热层30内的散热液体34中，进一步地，使所述光源20在所述衬底基板10上的正投影与所述散热空腔在所述衬底基板10上的正投影至少部分重叠，这样所述光源20散发的热量可以直接传导至所述散热空腔与所述衬底基板10接触的范围，减少了热量传导的路径，进一步增强了散热效果。\n\n[0041]图2为本发明实施例提供的一种散热层的俯视结构示意图，图2中示例性地，所述光源20为向所述背光模组提供直射式背光的光源，在其他实施方式中，向所述背光模组提供侧入式背光的光源。如图2所示，所述散热空腔在所述散热层30上呈阵列排布，通过呈阵列排布的所述散热空腔，使得所述衬底基板10上的热量可以通过所述散热空腔内的散热液体34进行均匀的散热，保证散热效果的均匀性。\n\n[0042]可选地，所述散热液体34的沸点为50-70℃。具体地，所述光源20安装在所述衬底基板10上，在所述衬底基板10的另外一侧表面上安装所述散热层30，所述散热层30包括内部包含有沸点为50-70℃的散热溶液的所述散热腔体。当背光模组启动后，所述光源20开始发光并产生大量热量，所述光源20产生的热量传导到所述衬底基板10上，散发的热量由所述衬底基板10的另外一面的散热腔体内部的所述散热溶液吸收，当吸收的热量使得所述散热溶液的温度达到其沸点时，所述散热溶液汽化并吸收热量，将热量传递到所述散热层30背离所述衬底基板10一侧，气体在温度较低的位置凝结，恢复液体状态，从而循环使用。通过所述散热液体34在液体气体液体的循环转换过程中将所述光源20产生的热量源源不断的传导出来，大幅提升所述光源20的热量传导，防止光源20的温度偏高并提升整体背光模组的散热效果。\n\n[0043]其中，所述散热液体34的热传导率非常高，可以将所述衬底基板10上的热量进行快速传导，这样就能够稳定所述光源20工作时周围的环境温度，从而可以保证装置的使用寿命。\n\n[0044]一种具体的实施方式中，本发明提供的背光模组，如图3所示，所述衬底基板10与所述散热基板36贴合的一侧对应所述散热空腔的表面形成有多个第一子凸部368；具体地，所述光源20发出的热量从所述衬底基板10经过所述散热液体34传递至所述散热基板36靠近所述散热空腔一侧的表面361，根据传导、对流和辐射的三种热传递方式，本实施例中通过所述散热液体34在液体\n\n[0045]气体液体的循环转换过程中将热量源源不断的传导，因此所述散热液体34向所述散热基板36靠近所述散热空腔一侧的表面361传递热量的方式主要以对流为主，其热对流的公式为：Q＝H×A×ΔT；其中，Q代表热量，也就是热对流所带走的热量；H为热对流系数值，A代表热对流的有效接触面积；ΔT代表固体表面与区域流体之间的温度差。如图4所示，所述散热基板36靠近所述散热空腔一侧的表面361上形成有多个第一子凸部368，通过所述第一子凸部368增加了所述散热基板36靠近所述散热空腔一侧的表面361的面积，即增加了散热基板36与散热液体34的接触面积，相当于增加了热对流的有效接触面积，由此使得热对流所带走的热量增多，从而提高了所述散热基板36的散热效率。\n\n[0046]进一步地，所述光源20发出的热量从所述衬底基板10经过所述散热液体34传递至所述散热基板36靠近所述散热空腔一侧的表面361，再传递至所述散热基板36远离所述衬底基板10一侧的表面363，如图4所示，所述散热基板36远离所述衬底基板10一侧的表面363上形成有多个第二子凸部369，通过所述第二子凸部369增加了所述散热基板36的散热面积，进一步增强了所述背光模组的散热效果。\n\n[0047]一种具体的实施方式中，本发明提供的背光模组，所述散热基板36的材料包括玻璃、陶瓷或金属。\n\n[0048]可选地，所述散热基板36采用石墨制成，石墨作为一种全新的导热散热材料，沿两个方向均匀导热，并且其水平方向的热导率远大于垂直方向的热导率，一般来说，石墨水平方向的热导率在150-1500W/(m.K)之间，其垂直方向的热导率在15-25W/(m.K)，因此，石墨是一种很好的均匀热量的材料，采用石墨制备所述散热基板36，可以进一步提升背光模组整体均匀散热的效果。\n\n[0049]可选地，所述散热基板36采用铜箔材料，由于铜箔属于各向同性材料，其在各个方向上的电导率均达到401W/(m.K)，是一种极佳的导热材料，能够将所述光源20传递到所述散热液体34的热量进行有效的散热，提高散热效率。\n\n[0050]另一方面，常见的摩擦，人员走动，接触/分离都会产生静电，所述散热基板36采用导电的金属材料，可将静电导走，减少静电冲击元器件，可有效降低静电风险，保障所述光源20的使用环境。同时由于所述散热液体34具有较高的热传导率，而且所述散热基板36靠近所述衬底基板10一侧设置有多个凹部362，故允许设计更薄的散热基板以节省金属材料，降低成本。\n\n[0051]一种具体的实施方式中，本发明提供的背光模组，所述光源20为mini LED灯珠。具体地，所述mini LED灯珠为长方体，其长边和宽边尺寸为0.25mm-0.5mm，高0.1mm左右，可五面发光。相比于采用传统LED作为光源的背光模组，使用mini LED的背光模组可采用更加密集的芯片排布来减少混光距离，使背光模组能够做到超薄。此外，配合local dimming控制，采用mini LED的显示装置可以得到更好的对比度和显示效果。\n\n[0052]目前的mini背光显示成为高阶产品的主流方案，由于单个产品LED的数量多达几万甚至几十万颗，比常规直下式背光的LED数量提升几十倍，单位面积热量集中，导致mini背光产品需要采用风扇或其他方式进行散热，从而增加噪音及用户可感知的温度提升，影响用户体验；目前市面上的mini背光有两种方式，一种是铝基板的mini LED；另一种是玻璃基板的mini LED，相对而言，玻璃基板的mini LED可做到更加精细的方案，但是由于玻璃基板的mini LED集成数量极大，导致灯板的散热较高，整体温度不可控，需要增加散热方案才能具有量产效益。本发明实施例提供的一种背光模组，所述光源20产生的热量经过所述散热液体34均匀的传递给所述散热层30远离所述衬底基板10一侧，最终散发到空气中，因而保证背光模组整体的温度相对较低，可以将产品控制在一定温升范围内，扩展了mini LED的应用。\n\n[0053]一种具体的实施方式中，本发明提供的背光模组，所述背光模组包括设置于所述衬底基板10靠近所述光源20一侧的金属走线21。具体地，如图5所示，图5为本发明实施例提供的一种背光模组的俯视结构示意图，图5中示例性地，所述光源20为向所述背光模组提供直射式背光的光源20，在其他实施方式中，可以向所述背光模组提供侧入式背光的光源20；所述光源20呈阵列式设置于所述衬底基板10上，并且通过所述衬底基板10上的所述金属走线21实现所述光源20之间的电连接。由于所述光源20发光及其他元器件工作的过程，会导致所述衬底基板10的温度较高，并且LED区域与非LED区域温度差异极大，所以在所述衬底基板10远离所述光源20的一侧增加所述散热层30，所述光源20产生的热量经过所述散热液体34均匀的传递给所述散热层30远离所述衬底基板10一侧，通过所述散热液体34在液体与气体之间进行转化，将所述光源20的热量传导至所述散热基板36，并且通过呈阵列排布的所述散热空腔，使得所述衬底基板10上的热量可以通过所述散热空腔内的散热液体34进行均匀的散热，提升了散热效果的均匀性。\n\n[0054]其中，所述衬底基板10可以采用玻璃制成，所述金属走线21排布在所述衬底基板10上，所述金属走线21受到拉扯或挤压，容易断裂，影响显示效果，因此通过金属材质的所述散热基板36，可以对玻璃材质的所述衬底基板10提供良好的固定和支撑效果，防止所述衬底基板10变形过大对所述金属走线21造成影响；此外，还可以增加结构件固定所述衬底基板10，进一步提升产品的工艺性能。\n\n[0055]其中，所述金属走线21用于形成所述光源20的电路结构，可选地，本实施例中金属走线21由铜箔材料制成，可以满足导电层良好的导电效果，而且铜箔属于各向同性材料，其在各个方向上的电导率均达到401W/(m.K)，是一种极佳的导热材料，能够将所述光源20产生的热量进行有效的传导。\n\n[0056]可选地，可以通过刻蚀的方法在所述衬底基板10上设置所述金属走线21，再通过焊接技术将所述光源20焊接到所述金属走线21组成的电路结构中，通过将所述光源20直接焊接到电路结构上，无需通过PCB板及导热胶固定，进一步简化了工艺。\n\n[0057]本发明实施例还提供一种显示装置，包括如前所述的背光模组和显示面板，所述显示面板设置在靠近所述背光模组出光面一侧。\n\n[0058]综上，本发明提供了一种背光模组及显示装置，包括衬底基板、间隔设置于衬底基板上的多个光源，以及设置于衬底基板远离光源一侧的散热层，其中散热层包括至少一个散热空腔，及填充于散热空腔内的散热液体，通过散热液体在液态和气态之间的转化吸收光源产生的热量，提高散热效率，并且通过衬底基板与散热基板贴合的一侧对应散热空腔的表面形成的多个第一子凸部，及散热基板远离衬底基板一侧的表面上形成的多个第二子凸部，可以增加散热面积，进一步提升散热效果。\n\n[0059]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种背光模组及显示装置。\n\n背景技术\n\n[0002]背光技术在液晶显示领域有着广泛的应用，其依靠背光源可以增加液晶显示屏的亮度。传统背光源大多采用冷阴极管，但是随着LED技术的不断发展，LED因为低功耗、低发热量、亮度高以及寿命长等特点，其将会逐步地取代传统背光源。\n\n[0003]在LED背光工作时，由于LED属于光电元件，其工作过程中有15％-25％的电能可转换为光能，其余大部分的电能几乎都转换成热能，使得LED元件的温度升高，而整个背光系统又处于一个相对密封的空间，如果热量不断积累，当LED元件的温度上升到超过其最大允许温度时，LED元件就会因过热而损坏，进一步地影响产品的使用寿命。\n\n发明内容\n\n[0004]为解决上述技术问题，本发明实施例提供了一种背光模组，包括：\n\n[0005]衬底基板；\n\n[0006]多个光源，间隔设置于所述衬底基板上；\n\n[0007]散热层，设置于所述衬底基板远离所述光源一侧，其中，所述散热层包括至少一个散热空腔，及填充于所述散热空腔内的散热液体。\n\n[0008]根据本发明实施例所提供的背光模组，所述散热层包括散热基板，所述散热基板朝向所述衬底基板一侧设置有至少一个凹部，所述散热基板与所述衬底基板远离所述光源一侧贴合，使所述凹部与所述衬底基板之间形成所述散热空腔。\n\n[0009]根据本发明实施例所提供的背光模组，所述散热基板与所述衬底基板的贴合方式包括焊接或者粘接。\n\n[0010]根据本发明实施例所提供的背光模组，所述光源在所述衬底基板上的正投影与所述散热空腔在所述衬底基板上的正投影至少部分重叠。\n\n[0011]根据本发明实施例所提供的背光模组，所述散热液体的沸点为50-70℃。\n\n[0012]根据本发明实施例所提供的背光模组，所述衬底基板与所述散热基板贴合的一侧对应所述散热空腔的表面形成有多个第一子凸部。\n\n[0013]根据本发明实施例所提供的背光模组，所述散热基板远离所述衬底基板一侧的表面上形成有多个第二子凸部。\n\n[0014]根据本发明实施例所提供的背光模组，所述散热基板的材料包括玻璃、陶瓷或金属。\n\n[0015]根据本发明实施例所提供的背光模组，所述光源为mini LED灯珠。\n\n[0016]另一方面，本发明实施例还提供了一种显示装置，包括如前所述的背光模组。\n\n[0017]本申请的有益效果在于，本发明提供了一种背光模组及显示装置，包括衬底基板、间隔设置于衬底基板上的多个光源，以及设置于衬底基板远离光源一侧的散热层，其中散热层包括至少一个散热空腔，及填充于散热空腔内的散热液体，通过散热液体在液态和气态之间的转化吸收光源产生的热量，提高散热效率，并且通过衬底基板与散热基板贴合的一侧对应散热空腔的表面形成的多个第一子凸部，及散热基板远离衬底基板一侧的表面上形成的多个第二子凸部，可以增加散热面积，进一步提升散热效果。\n\n附图说明\n\n[0018]为了更清楚地说明本申请实施例或现有技术中的技术方案，下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本申请的部分实施例，对于本领域普通技术人员而言，在不付出创造性劳动的前提下，还可以根据这些附图获取其他的附图。\n\n[0019]图1为本发明实施例提供的一种背光模组的结构示意图；\n\n[0020]图2为本发明实施例提供的一种散热层的俯视结构示意图；\n\n[0021]图3为本发明实施例提供的一种散热基板的结构示意图；\n\n[0022]图4为图3中散热基板的部分放大结构示意图；\n\n[0023]图5为本发明实施例提供的一种背光模组的俯视结构示意图。\n\n具体实施方式\n\n[0024]这里所公开的具体结构和功能细节仅仅是代表性的，并且是用于描述本申请的示例性实施例的目的。但是本申请可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。\n\n[0025]在本申请的描述中，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。\n\n[0026]本发明所提到的方向用语，例如[上]、[下]、[内]、[外]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。\n\n[0027]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0028]为了方便对本发明技术方案的理解，下面结合附图及具体实施例对本发明的技术方案进行详细的说明。\n\n[0029]如图1所示，本发明实施例提供一种背光模组1，包括衬底基板10、间隔设置于所述衬底基板10上的多个光源20，以及设置于所述衬底基板10远离所述光源20一侧的散热层30，其中所述散热层30包括至少一个散热空腔，及填充于所述散热空腔内的散热液体34，通过所述散热液体34在液态和气态之间的转化吸收所述光源20产生的热量，提高散热效率。\n\n[0030]所述散热液体34的工作过程如下：当所述背光模组启动后，所述光源20开始发光并产生大量热量，所述光源20产生的热量传导到所述衬底基板10上，由于所述衬底基板10远离所述光源20一侧设置有所述散热层30，其中所述散热层30包括至少一个所述散热空腔，及填充于所述散热空腔内的所述散热液体34，所述散热液体34与所述衬底基板10能够完全无缝隙接触；此时所述散热空腔内的所述散热液体34吸收所述光源20产生的热量，所述散热液体34在受热时极容易汽化，易挥发液体在受热时汽化并吸收热量，将热量传递到所述散热层30背离所述衬底基板10一侧，气体在温度较低的位置凝结，恢复液体状态，从而循环使用。通过所述散热液体34在液体气体液体的循环转换过程中将热量源源不断的传导出来，大幅提升了所述光源20向外的热量传导，防止所述光源20的温度偏高并提升所述背光模组整体的散热效果。\n\n[0031]具体地，所述散热空腔内存储有受热汽化的所述散热液体34，存储于所述散热空腔内的所述液体采用低沸点，高挥发性溶剂。进一步地，所述衬底基板10远离所述光源20一侧设置有导热层，即所述散热层30与所述衬底基板10之间设置所述导热层(图中未示出)，所述导热层采用热界面材料制成，其中热界面材料为粘结固化导热胶、相变材料或导热弹性体材料，优选导热凝胶或硅胶。通过采用导热凝胶或硅胶这些热界面材料形成所述导热层，可以保证所述光源20产生的热量通过所述衬底基板10远离所述光源20一侧的所述导热层有效传递至所述散热空腔内的所述散热液体34。所述光源20产生的热量经过热界面材料传导到所述散热空腔，所述散热空腔内的所述散热液体34受热汽化变成蒸汽，经过蒸汽在所述散热空腔内的循环，将热量快速传递给所述散热层30远离所述衬底基板10一侧，蒸汽在温度较低的位置冷凝变成液体，从而在所述散热空腔内周而复始地完成热量的循环和传递，整套系统是一个可持续的真正实现了循环的散热装置。由于液体的汽化和冷凝过程能够吸收和放出大量的热量，因此散热效率极高，所述光源20产生的热量经过所述散热液体34均匀的传递给所述散热层30远离所述衬底基板10一侧，最终散发到空气中，因而保证所述背光模组整体的温度相对较低，不会产生给用户带来使用发热的体验。\n\n[0032]另一方面，上述方案在有效的降低所述背光模组整体的温度的同时，也减小了所述背光模组中温度分布梯度，有效地避免了所述背光模组内的光学部件因温度梯度变化差异导致的热胀冷缩，减少各部件的内部应力问题的出现。此外，在所述衬底基板10远离所述光源20一侧设置的所述散热层30使所述衬底基板10上的所述光源20产生的热量得到有效的传导，使得控制所述光源20的芯片的温度也能有效的降低，延长了所述光源20的寿命，由于散热效果的提高，所述背光模组也能够使用更大功率的光源。\n\n[0033]一种具体的实施方式中，本发明提供的背光模组，所述散热层30包括散热基板36，所述散热基板36朝向所述衬底基板10一侧设置有至少一个凹部362，所述散热基板36与所述衬底基板10远离所述光源20一侧贴合，使所述凹部362与所述衬底基板10之间形成所述散热空腔。\n\n[0034]本实施例中，在所述衬底基板10远离所述光源20一侧设置的所述散热层30，所述散热层30包括与所述衬底基板10接触设置的散热基板36，具体地，所述散热基板36与所述衬底基板10贴合设置，所述散热基板36朝向所述衬底基板10一侧设置有至少一个凹部362，相应的，所述散热基板36还包括朝向所述衬底基板10一侧与所述凹部362相邻的凸部364，所述凸部364与所述衬底基板10远离所述光源20一侧贴合，使得所述凹部362与所述衬底基板10之间形成密闭的容纳空间，即所述散热空腔。所述散热基板36远离所述衬底基板10一侧的表面裸露于所述背光模组的底部，可以通过显示器件的背板与外界流通的空气快速进行热交换，因此所述光源20散发的热量可快速的通过所述散热基板36散发到外界。相比现有技术，本实施例中的所述背光模组的散热性能提高，有利于提高所述光源20的工作稳定性，延长其使用寿命。\n\n[0035]另一方面，所述散热基板36对所述背光模组的内部结构件起到支撑作用，因此，本实施例提供的所述散热基板36，不仅与所述衬底基板10之间形成所述散热空腔，使所述光源20产生的热量均匀化，防止局部位置温度偏高，还可以作为所述背光模组的支撑零件，进一步提升产品的工艺性能。\n\n[0036]一种具体的实施方式中，本发明提供的背光模组，所述散热基板36与所述衬底基板10的贴合方式包括焊接或者粘接。\n\n[0037]具体的，所述散热基板36与所述衬底基板10贴合设置，所述散热基板36朝向所述衬底基板10一侧设置有至少一个凹部362，相应的，所述散热基板36还包括朝向所述衬底基板10一侧与所述凹部362相邻的凸部364，所述散热基板36的凸部364与所述衬底基板10远离所述光源20一侧焊接或者粘接，使得所述凹部362与所述衬底基板10之间形成密闭的容纳空间，即所述散热空腔；另一方面，所述散热基板36可对所述衬底基板10起到支撑作用，提升产品的工艺性能。\n\n[0038]其中，如图1所示，所述凸部364可以通过导热胶层366与所述衬底基板10连接，使得所述散热基板36贴附在所述衬底基板10上，导热胶层366既可以起到固定所述衬底基板10的作用，另外还可以快速地通过导热胶层366将所述光源20工作时散发的热量传导至所述散热空腔。\n\n[0039]其中，所述散热基板36与所述衬底基板10也可以通过锁螺钉这种可拆卸的连接方式进行连接固定，即使以后出现了所述散热基板36或所述散热液体34需要更换的情况，也可以通过松动锁螺钉很方便地对所述散热基板36或所述散热液体34进行更换。\n\n[0040]如图1所示，本发明提供的背光模组，所述光源20在所述衬底基板10上的正投影与所述散热空腔在所述衬底基板10上的正投影至少部分重叠，具体地，所述背光模组包括衬底基板10、光源20以及散热层30，所述光源20位于所述衬底基板10上，所述散热层30设置在所述衬底基板10远离所述光源20的一侧，即所述衬底基板10作为热传导介质位于所述光源20和所述散热层30之间，将所述光源20散发的热量传导至所述散热层30内的散热液体34中，进一步地，使所述光源20在所述衬底基板10上的正投影与所述散热空腔在所述衬底基板10上的正投影至少部分重叠，这样所述光源20散发的热量可以直接传导至所述散热空腔与所述衬底基板10接触的范围，减少了热量传导的路径，进一步增强了散热效果。\n\n[0041]图2为本发明实施例提供的一种散热层的俯视结构示意图，图2中示例性地，所述光源20为向所述背光模组提供直射式背光的光源，在其他实施方式中，向所述背光模组提供侧入式背光的光源。如图2所示，所述散热空腔在所述散热层30上呈阵列排布，通过呈阵列排布的所述散热空腔，使得所述衬底基板10上的热量可以通过所述散热空腔内的散热液体34进行均匀的散热，保证散热效果的均匀性。\n\n[0042]可选地，所述散热液体34的沸点为50-70℃。具体地，所述光源20安装在所述衬底基板10上，在所述衬底基板10的另外一侧表面上安装所述散热层30，所述散热层30包括内部包含有沸点为50-70℃的散热溶液的所述散热腔体。当背光模组启动后，所述光源20开始发光并产生大量热量，所述光源20产生的热量传导到所述衬底基板10上，散发的热量由所述衬底基板10的另外一面的散热腔体内部的所述散热溶液吸收，当吸收的热量使得所述散热溶液的温度达到其沸点时，所述散热溶液汽化并吸收热量，将热量传递到所述散热层30背离所述衬底基板10一侧，气体在温度较低的位置凝结，恢复液体状态，从而循环使用。通过所述散热液体34在液体气体液体的循环转换过程中将所述光源20产生的热量源源不断的传导出来，大幅提升所述光源20的热量传导，防止光源20的温度偏高并提升整体背光模组的散热效果。\n\n[0043]其中，所述散热液体34的热传导率非常高，可以将所述衬底基板10上的热量进行快速传导，这样就能够稳定所述光源20工作时周围的环境温度，从而可以保证装置的使用寿命。\n\n[0044]一种具体的实施方式中，本发明提供的背光模组，如图3所示，所述衬底基板10与所述散热基板36贴合的一侧对应所述散热空腔的表面形成有多个第一子凸部368；具体地，所述光源20发出的热量从所述衬底基板10经过所述散热液体34传递至所述散热基板36靠近所述散热空腔一侧的表面361，根据传导、对流和辐射的三种热传递方式，本实施例中通过所述散热液体34在液体\n\n[0045]气体液体的循环转换过程中将热量源源不断的传导，因此所述散热液体34向所述散热基板36靠近所述散热空腔一侧的表面361传递热量的方式主要以对流为主，其热对流的公式为：Q＝H×A×ΔT；其中，Q代表热量，也就是热对流所带走的热量；H为热对流系数值，A代表热对流的有效接触面积；ΔT代表固体表面与区域流体之间的温度差。如图4所示，所述散热基板36靠近所述散热空腔一侧的表面361上形成有多个第一子凸部368，通过所述第一子凸部368增加了所述散热基板36靠近所述散热空腔一侧的表面361的面积，即增加了散热基板36与散热液体34的接触面积，相当于增加了热对流的有效接触面积，由此使得热对流所带走的热量增多，从而提高了所述散热基板36的散热效率。\n\n[0046]进一步地，所述光源20发出的热量从所述衬底基板10经过所述散热液体34传递至所述散热基板36靠近所述散热空腔一侧的表面361，再传递至所述散热基板36远离所述衬底基板10一侧的表面363，如图4所示，所述散热基板36远离所述衬底基板10一侧的表面363上形成有多个第二子凸部369，通过所述第二子凸部369增加了所述散热基板36的散热面积，进一步增强了所述背光模组的散热效果。\n\n[0047]一种具体的实施方式中，本发明提供的背光模组，所述散热基板36的材料包括玻璃、陶瓷或金属。\n\n[0048]可选地，所述散热基板36采用石墨制成，石墨作为一种全新的导热散热材料，沿两个方向均匀导热，并且其水平方向的热导率远大于垂直方向的热导率，一般来说，石墨水平方向的热导率在150-1500W/(m.K)之间，其垂直方向的热导率在15-25W/(m.K)，因此，石墨是一种很好的均匀热量的材料，采用石墨制备所述散热基板36，可以进一步提升背光模组整体均匀散热的效果。\n\n[0049]可选地，所述散热基板36采用铜箔材料，由于铜箔属于各向同性材料，其在各个方向上的电导率均达到401W/(m.K)，是一种极佳的导热材料，能够将所述光源20传递到所述散热液体34的热量进行有效的散热，提高散热效率。\n\n[0050]另一方面，常见的摩擦，人员走动，接触/分离都会产生静电，所述散热基板36采用导电的金属材料，可将静电导走，减少静电冲击元器件，可有效降低静电风险，保障所述光源20的使用环境。同时由于所述散热液体34具有较高的热传导率，而且所述散热基板36靠近所述衬底基板10一侧设置有多个凹部362，故允许设计更薄的散热基板以节省金属材料，降低成本。\n\n[0051]一种具体的实施方式中，本发明提供的背光模组，所述光源20为mini LED灯珠。具体地，所述mini LED灯珠为长方体，其长边和宽边尺寸为0.25mm-0.5mm，高0.1mm左右，可五面发光。相比于采用传统LED作为光源的背光模组，使用mini LED的背光模组可采用更加密集的芯片排布来减少混光距离，使背光模组能够做到超薄。此外，配合local dimming控制，采用mini LED的显示装置可以得到更好的对比度和显示效果。\n\n[0052]目前的mini背光显示成为高阶产品的主流方案，由于单个产品LED的数量多达几万甚至几十万颗，比常规直下式背光的LED数量提升几十倍，单位面积热量集中，导致mini背光产品需要采用风扇或其他方式进行散热，从而增加噪音及用户可感知的温度提升，影响用户体验；目前市面上的mini背光有两种方式，一种是铝基板的mini LED；另一种是玻璃基板的mini LED，相对而言，玻璃基板的mini LED可做到更加精细的方案，但是由于玻璃基板的mini LED集成数量极大，导致灯板的散热较高，整体温度不可控，需要增加散热方案才能具有量产效益。本发明实施例提供的一种背光模组，所述光源20产生的热量经过所述散热液体34均匀的传递给所述散热层30远离所述衬底基板10一侧，最终散发到空气中，因而保证背光模组整体的温度相对较低，可以将产品控制在一定温升范围内，扩展了mini LED的应用。\n\n[0053]一种具体的实施方式中，本发明提供的背光模组，所述背光模组包括设置于所述衬底基板10靠近所述光源20一侧的金属走线21。具体地，如图5所示，图5为本发明实施例提供的一种背光模组的俯视结构示意图，图5中示例性地，所述光源20为向所述背光模组提供直射式背光的光源20，在其他实施方式中，可以向所述背光模组提供侧入式背光的光源20；所述光源20呈阵列式设置于所述衬底基板10上，并且通过所述衬底基板10上的所述金属走线21实现所述光源20之间的电连接。由于所述光源20发光及其他元器件工作的过程，会导致所述衬底基板10的温度较高，并且LED区域与非LED区域温度差异极大，所以在所述衬底基板10远离所述光源20的一侧增加所述散热层30，所述光源20产生的热量经过所述散热液体34均匀的传递给所述散热层30远离所述衬底基板10一侧，通过所述散热液体34在液体与气体之间进行转化，将所述光源20的热量传导至所述散热基板36，并且通过呈阵列排布的所述散热空腔，使得所述衬底基板10上的热量可以通过所述散热空腔内的散热液体34进行均匀的散热，提升了散热效果的均匀性。\n\n[0054]其中，所述衬底基板10可以采用玻璃制成，所述金属走线21排布在所述衬底基板10上，所述金属走线21受到拉扯或挤压，容易断裂，影响显示效果，因此通过金属材质的所述散热基板36，可以对玻璃材质的所述衬底基板10提供良好的固定和支撑效果，防止所述衬底基板10变形过大对所述金属走线21造成影响；此外，还可以增加结构件固定所述衬底基板10，进一步提升产品的工艺性能。\n\n[0055]其中，所述金属走线21用于形成所述光源20的电路结构，可选地，本实施例中金属走线21由铜箔材料制成，可以满足导电层良好的导电效果，而且铜箔属于各向同性材料，其在各个方向上的电导率均达到401W/(m.K)，是一种极佳的导热材料，能够将所述光源20产生的热量进行有效的传导。\n\n[0056]可选地，可以通过刻蚀的方法在所述衬底基板10上设置所述金属走线21，再通过焊接技术将所述光源20焊接到所述金属走线21组成的电路结构中，通过将所述光源20直接焊接到电路结构上，无需通过PCB板及导热胶固定，进一步简化了工艺。\n\n[0057]本发明实施例还提供一种显示装置，包括如前所述的背光模组和显示面板，所述显示面板设置在靠近所述背光模组出光面一侧。\n\n[0058]综上，本发明提供了一种背光模组及显示装置，包括衬底基板、间隔设置于衬底基板上的多个光源，以及设置于衬底基板远离光源一侧的散热层，其中散热层包括至少一个散热空腔，及填充于散热空腔内的散热液体，通过散热液体在液态和气态之间的转化吸收光源产生的热量，提高散热效率，并且通过衬底基板与散热基板贴合的一侧对应散热空腔的表面形成的多个第一子凸部，及散热基板远离衬底基板一侧的表面上形成的多个第二子凸部，可以增加散热面积，进一步提升散热效果。\n\n[0059]综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10924, 23978, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种mini LED背光模组的驱动方法、驱动电路及显示装置。\n\n背景技术\n\n[0002]mini LED技术可以理解为LCD的全面升级版，mini LED的背光层在单位面积内可以容纳更多LED，从而大大提高背光源数量，因此可以进行区域亮度调节的设计，从而在个别区域实现关闭LED从而达到完全的黑色，不仅减小了功耗，而且由于单位面积上LED数量的增加，实现超高对比度和精细的动态分布，让亮场更亮，暗场更暗，从而使得显示效果更佳细致。\n\n[0003]目前，图1为现有技术的mini LED背光模组的结构示意图，如图1所示，mini LED背光是通过多块灯板(每个虚线框为一个灯板)拼接而成的，每块灯板上分布阵列排布的有机发光二极管(LED)多块灯板虽然是采用分开独立扫描的方式进行驱动，但是，多块灯板在一帧显示时段内是同时点亮的，即mini LED背光的每行LED均同时进行工作，即可能会同时被点亮，这样会带来电流波动过大的问题，从而导致有机发光二极管寿命减少、噪声和电磁干扰的问题。\n\n[0004]因此，有必要提出一种mini LED背光模组的驱动方法、驱动电路及显示装置，以解决mini LED背光工作时的电流波动较大的问题。\n\n发明内容\n\n[0005]为了解决上述mini LED背光工作时的电流波动较大的问题，本申请实施例提供一种mini LED背光模组的驱动方法、驱动电路及显示装置。\n\n[0006]第一方面，本申请实施例提供一种mini LED背光模组的驱动方法，所述mini LED背光模组包括k个水平拼接的背光分区，每个所述背光分区包括m行*n列阵列排布的发光元件，m、n和k均为正整数；所述驱动方法包括：\n\n[0007]在每帧显示时段内，依据预设时序提供m个扫描信号，并依据m个所述扫描信号依次扫描所述mini LED背光模组的m行所述发光元件；\n\n[0008]在每帧显示时段内，当所述mini LED背光模组的第i行所述发光元件被扫描时，根据亮度信息依次错开向第1个至第k个所述背光分区输入数据信号，分别使第1个至第k个所述背光分区的第i行所述发光元件同时工作，直至驱动所述mini LED背光模组中的全部所述发光元件进行工作；其中，i为正整数，且1≤i≤m。\n\n[0009]在一些实施例中，所述依次错开向第1个至第k个所述背光分区输入数据信号，分别使第1个至第k个所述背光分区的第i行所述发光元件同时工作，具体包括：\n\n[0010]向第1个所述背光分区输入数据信号，以驱动第1个所述背光分区的第i行的n个所述发光元件同时工作；\n\n[0011]向第2个所述背光分区输入数据信号，以驱动第2个所述背光分区的第i行的n个所述发光元件同时工作；\n\n[0012]以此类推，直至向第k个所述背光分区输入数据信号，以驱动第k个所述背光分区的第i行的n个所述发光元件同时工作。\n\n[0013]在一些实施例中，被连续驱动的两个所述背光分区的第i行所述发光元件的开始点亮时刻间隔一个单位时长，其中，所述单位时长为每个所述背光分区的每行所述发光元件被点亮的耗时。\n\n[0014]在一些实施例中，所述直至驱动所述mini LED背光模组中的全部所述发光元件均被点亮，还包括：\n\n[0015]根据所述亮度信息确定背光灰阶信息，并根据所述背光灰阶信息控制每个所述背光分区的各行所述发光元件被点亮的时长，以使得所述mini LED背光模组提供的背光源达到所述背光灰阶信息所要求的背光灰阶。\n\n[0016]在一些实施例中，每个所述背光分区的面积和形状均相同。\n\n[0017]第一方面，本申请实施例提供一种ini LED背光模组的驱动电路，所述mini LED背光模组包括k个水平拼接的背光分区，每个所述背光分区包括m行*n列发光元件，m、n和k均为正整数；所述驱动电路包括栅极驱动器和源极驱动器，其中：\n\n[0018]所述栅极驱动器用于在每帧显示时段内，依据预设时序提供m个扫描信号，并依据m个所述扫描信号依次扫描所述mini LED背光模组的m行所述发光元件；\n\n[0019]所述源极驱动器用于在每帧显示时段内，当所述mini LED背光模组的第i行所述发光元件被扫描时，根据亮度信息依次错开向第1个至第k个所述背光分区输入数据信号，分别使第1个至第k个所述背光分区的第i行所述发光元件同时工作，直至驱动所述miniLED背光模组中的全部所述发光元件进行工作；其中，i为正整数，且1≤i≤m。\n\n[0020]在一些实施例中，所述源极驱动器还用于，根据所述亮度信息确定背光灰阶信息，并根据所述背光灰阶信息控制每个所述背光分区的各行所述发光元件被点亮的时长，以使得所述mini LED背光模组提供的背光源达到所述背光灰阶信息所要求的背光灰阶。\n\n[0021]在一些实施例中，每个所述背光分区包括多个水平和/或垂直拼接设置的背光灯板，每个所述背光灯板上设置有驱动单元和多个所述发光元件，其中，所述驱动单元分别与多个所述发光元件和所述源极驱动器连接，所述源极驱动器通过所述驱动单元控制多个所述发光元件的发光时长和发光亮度。\n\n[0022]在一些实施例中，所述发光元件为有机发光二极管。\n\n[0023]第三方面，本申请实施例还提供一种显示装置，该显示装置包括mini LED背光模组，以及如上所述的mini LED背光模组的驱动电路，所述mini LED背光模组的驱动电路用于驱动所述mini LED背光模组为所述显示装置提供背光源。\n\n[0024]本申请实施例提供的mini LED背光模组的驱动方法、驱动电路及显示装置，该mini LED背光模组包括k个水平拼接的背光分区，该驱动电路包括栅极驱动器和源极驱动器，在每帧显示时段内，栅极驱动器每提供一个扫描信号为mini LED背光模组的一行发光元件提供工作电能时，源极驱动器就根据亮度信息依次驱动mini LED背光模组中每个水平拼接的背光分区的该行发光元件分别同时工作，也即，源极驱动器分别使多个背光分区中的该行发光元件被同时点亮或同时不点亮，这样将mini LED背光模组中原本需要同时工作的每行发光元件拆分为多个背光分区的该行发光元件分别同时工作，避免了mini LED背光模组中的每行发光元件同时被点亮时带来的背光电流波动过大的问题，以此防止背光电流过大导致的发光元件寿命过短，以及噪声和电磁干扰的问题。\n\n附图说明\n\n[0025]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0026]图1为现有技术的mini LED背光模组的结构示意图。\n\n[0027]图2为现有技术的mini LED背光模组的数据信号的时序示意图。\n\n[0028]图3为本申请实施例提供的mini LED背光模组的驱动电路的结构示意图。\n\n[0029]图4为本申请实施例提供的mini LED背光模组的第一种数据信号的时序示意图。\n\n[0030]图5为现有技术的mini LED背光模组的另一种结构示意图。\n\n[0031]图6为本申请实施例提供的mini LED背光模组的第二种数据信号的时序示意图。\n\n[0032]图7为本申请实施例提供的mini LED背光模组的驱动方法的流程示意图。\n\n具体实施方式\n\n[0033]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0034]如图1所示，以mini LED背光模组包括左、右两个背光分区为例，在一帧显示时间内，左背光分区11和右背光分区12被同时点亮，即左、右背光同一行的LED同时工作，图2为现有技术的mini LED背光模组的数据信号的时序示意图，如图2所示，当左、右背光同一行的LED被扫描信号提供电能时，数据信号同时向左背光分区11和右背光分区12输入数据信号，由此使左背光分区11和右背光分区12的同一行LED被同时打开，这样，每次点亮该miniLED背光模组的一行LED时，会给背光电流带来较大的波动，在同时向左背光分区11和右背光分区12输入数据信号时，背光电流在高电流和低电流之间切换，即背光电流产生较大的波动，这会对mini LED背光模组的LED产生较大的损害，导致LED寿命过短，同时还会带来噪声和电磁干扰的问题。\n\n[0035]针对上述问题，本申请实施例提供一种mini LED背光模组的驱动电路，图3为本申请实施例提供的mini LED背光模组的驱动电路的结构示意图，如图3所示，该mini LED背光模组包括k个水平拼接的背光分区101，每个背光分区101包括m行*n列发光元件；其中，m、n和k均为正整数。该驱动电路包括栅极驱动器和源极驱动器，其中：\n\n[0036]栅极驱动器用于在每帧显示时段内依据预设时序提供m个扫描信号，并依据m个扫描信号依次扫描mini LED背光模组的m行发光元件；\n\n[0037]源极驱动器用于在每帧显示时段内，当mini LED背光模组的第i行发光元件被扫描时，根据亮度信息依次错开向第1个至第k个所述背光分区输入数据信号，分别使第1个至第k个所述背光分区的第i行所述发光元件同时工作，直至驱动mini LED背光模组中的全部发光元件进行工作；其中，i为正整数，1≤i≤m。\n\n[0038]具体地，在每帧显示时段内，首先由栅极驱动器依据预设时序提供m个扫描信号来驱动mini LED背光模组的m行发光元件，即依次通过每个扫描信号驱动对应的一行发光元件，例如，当第i个扫描信号驱动第i行发光元件时，由源极驱动器根据亮度信息来依次错开向第1个至第k个背光分区输入数据信号，分别使第1个至第k个背光分区101的第i行的n个发光元件同时工作，直至使mini LED背光模组中的全部发光元件进行工作。需要说明的是，n个发光元件同时工作是指n个发光元件同时被点亮，或n个发光元件同时不被点亮；亮度信号包括每个背光分区101中m行发光元件分别需要被点亮和不需要被点亮的信息。\n\n[0039]这样，本申请实施例提供的mini LED背光模组的驱动电路，当栅极驱动器为miniLED背光模组的某一行发光元件提供电能时，由于源极驱动器分别向第1个至第k个背光分区101输入数据信号，从而依次驱动水平拼接的第1个至第k个背光分区101的该行发光元件分别同时工作，因此相比于现有技术的通过源极驱动器同时驱动mini LED背光模组的每行发光元件同时工作，该mini LED背光模组的驱动电路能减小电流的幅值和波动，由此防止mini LED背光模组的同一行发光元件同时被点亮而导致的背光电流过大的问题。\n\n[0040]值得注意的是，该mini LED背光模组的驱动电路沿用了栅极驱动器输出的扫描信号的原有时序，仅更改了源极驱动器输出的数据信号的时序，也就是说，该mini LED背光模组的驱动电路可以不对栅极驱动信号输出的扫描信号的时序进行修改，而只是更改源极驱动器输出的数据信号的时序，这样能够简化该mini LED背光模组的驱动电路的工作流程。\n\n[0041]可以理解的是，被连续驱动的两个背光分区101的第i行发光元件的开始点亮时刻间隔一个单位时长，其中，单位时长为每个背光分区101的每行发光元件被点亮的耗时。\n\n[0042]例如，以k＝2，即mini LED背光模组为图1所示的包括左背光分区11和右背光分区12这两个背光分区101为例，图4为本申请实施例提供的mini LED背光模组的第一种数据信号的时序示意图，结合图1和图4所示，假设左背光分区11和右背光分区12中的每行发光元件被点亮需要耗时第一单位时长，则交错驱动左背光分区11和右背光分区12中的同一行发光元件同时工作，即当第i行发光元件被栅极驱动器提供电能时，源极驱动器先向左背光分区11输入数据信号，再向右背光分区12输入数据信号，也就是说，左背光分区11与右背光分区12的数据信号的输入时刻错开一个第一单位时长，需要说明的是，图4中是以mini LED背光模组的发光元件被全部点亮，即向左背光分区11和右背光分区12输入的数据信号均为高电位为例。\n\n[0043]又例如，图5为现有技术的mini LED背光模组的另一种结构示意图，如图5所示，以k＝3，即mini LED背光模组包括分布于左、中、右的第一背光分区21、第二背光分区22和第三背光分区23为例，图6为本申请实施例提供的mini LED背光模组的第二种数据信号的时序示意图，结合图5和图6所示，假设第一背光分区21、第二背光分区22和第三背光分区23中的每行发光元件被点亮需要耗时第二单位时长，则依次驱动第一背光分区21、第二背光分区22和第三背光分区23的同一行发光元件同时工作，即当第i行发光元件被栅极驱动器提供电能时，源极驱动器先向第一背光分区21输入数据信号，再向第二背光分区22输入数据信号，然后向第三背光分区23输入数据信号，也就是说，第一背光分区21、第二背光分区22和第三背光分区23的数据信号的输入时刻依次错开一个第二单位时长，需要说明的是，图6也是以mini LED背光模组的发光元件被全部点亮，即向第一背光分区21、第二背光分区22和第三背光分区23输入的数据信号均为高电位为例。\n\n[0044]需要说明的是，为了在一帧时间内驱动mini LED背光模组中的所有发光元件进行工作，一般不会将mini LED背光模组划分为很多个背光分区101，否则如图4和图6所示，在一帧显示时段内，每个背光分区101可能存在数据信号的脉冲个数不够，导致部分发光元件无法被驱动点亮，因此，k一般不大于10，也即，将mini LED背光模组划分为不大于10个水平拼接的背光分区101。\n\n[0045]经过实际试验可知，本申请实施例提供的mini LED背光模组的驱动电路能减小背光电流的幅值和波动。\n\n[0046]需要强调的是，分别向第1个至第k个背光分区101输入数据信号，是为了减小miniLED背光模组的某行发光元件同时被点亮时的电流幅值和波动，针对某个背光分区101而言，如果某行发光元件无需被点亮，即此时向该背光分区101输入的数据信号为低电平，则此时背光电流本身就较小。而本申请实施例提供的mini LED背光模组的驱动电路，旨在减小的是总体背光的电流波动。\n\n[0047]基于上述实施例，基于伽马曲线，可以根据亮度信号能确定背光灰阶信息，因此在该mini LED背光模组的驱动电路中，源极驱动器还用于，根据亮度信息确定背光灰阶信息，并根据背光灰阶信息控制每个背光分区101的各行发光元件被点亮的时长，以使得miniLED背光模组提供的背光源达到背光灰阶信息所要求的背光灰阶。\n\n[0048]在一些实施例中，每个背光分区101的面积和形状均相同。\n\n[0049]在一些实施例中，每个背光分区101包括多个水平和/或垂直拼接设置的背光灯板，如图1所示，每个背光分区101由4个背光灯板(每个虚线框表示一个背光灯板)拼接而成，其中，每2个背光灯板水平拼接，然后再将每2个水平拼接的背光灯板垂直拼接形成每个背光分区101；如图5所示，每个背光分区101由2个背光灯板(每个虚线表示一个背光灯板)垂直拼接而成。\n\n[0050]进一步地，每个背光灯板上设置有驱动单元(附图中未示出)和多个发光元件，其中，每个背光灯板的驱动单元分别与多个发光元件和源极驱动器连接，源极驱动器通过驱动单元控制多个发光元件的发光时长和发光亮度。\n\n[0051]需要说明的是，该mini LED背光模组的发光元件一般采用有机发光二极管。\n\n[0052]图7为本申请实施例提供的mini LED背光模组的驱动方法的流程示意图，如图7所示，本申请实施例还提供一种mini LED背光模组的驱动方法，应用于如上所述的mini LED背光模组的驱动电路，该驱动电路包括栅极驱动器，源极驱动器和k个水平拼接的背光分区，每个背光分区包括m行*n列发光元件；其中，m、n和k均为正整数；该驱动方法包括：\n\n[0053]S1、在每帧显示时段内，依据预设时序提供m个扫描信号，并依据m个扫描信号依次扫描mini LED背光模组的m行发光元件；\n\n[0054]S2、在每帧显示时段内，当mini LED背光模组的第i行发光元件被扫描时，根据亮度信息依次错开向第1个至第k个背光分区输入数据信号，分别使第1个至第k个背光分区的第i行发光元件同时工作，直至驱动mini LED背光模组中的全部发光元件进行工作；其中，i为正整数，且1≤i≤m。\n\n[0055]基于上述实施例，步骤S2中，依次错开向第1个至第k个背光分区输入数据信号，分别使第1个至第k个背光分区的第i行发光元件同时工作，具体包括：\n\n[0056]向第1个背光分区输入数据信号，以驱动第1个背光分区的第i行的n个发光元件同时工作；\n\n[0057]向第2个背光分区输入数据信号，以驱动第2个背光分区的第i行的n个发光元件同时工作；\n\n[0058]以此类推，直至向第k个背光分区输入数据信号，以驱动第k个背光分区的第i行的n个发光元件同时工作。\n\n[0059]也就是说，当mini LED背光模组的某一行发光元件被扫描时，k个背光分区101被依次输入数据信号，使得第1个背光分区101的该行的n个发光元件同时被点亮之后，第2个背光分区101的该行的n个发光元件同时被点亮，然后第3个背光分区101的该行的n个发光元件同时被点亮，以此类推，直至第k个背光分区101的该行的n个发光元件同时被点亮。这样，mini LED背光模组的所有发光元件均被点亮。\n\n[0060]基于上述实施例，步骤S2中，直至驱动mini LED背光模组中的全部发光元件均被点亮，还包括：根据亮度信息确定背光灰阶信息，并根据背光灰阶信息控制每个背光分区101的各行发光元件被点亮的时长，以使得mini LED背光模组提供的背光源达到背光灰阶信息所要求的背光灰阶。\n\n[0061]基于同一发明构思，本申请实施例还提供一种显示装置，该显示装置包括miniLED背光模组，以及如上所述的mini LED背光模组的驱动电路，其中，mini LED背光模组的驱动电路用于驱动mini LED背光模组为显示装置提供背光源。该显示装置与该mini LED背光模组的驱动电路具有相同的结构和有益效果，由于上述各实施例已经对该mini LED背光模组的驱动电路进行了详细的描述，此处不再赘述。\n\n[0062]本申请实施例提供的mini LED背光模组的驱动方法、驱动电路及显示装置，该mini LED背光模组包括k个水平拼接的背光分区101，该驱动电路包括栅极驱动器和源极驱动器，在每帧显示时段内，栅极驱动器每提供一个扫描信号为mini LED背光模组的一行发光元件提供工作电能时，源极驱动器就根据亮度信息依次驱动mini LED背光模组中每个水平拼接的背光分区101的该行发光元件同时工作，也即，源极驱动器分别使多个背光分区101中的该行发光元件被同时点亮或同时不点亮，这样将mini LED背光模组中原本需要同时工作的每行发光元件拆分为多个背光分区101的该行发光元件，避免了mini LED背光模组中的该行发光元件同时被点亮时带来的背光电流波动过大的问题，以此防止背光电流过大导致的发光元件寿命过短，以及噪声和电磁干扰的问题。\n\n[0063]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0064]以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种mini LED背光模组的驱动方法、驱动电路及显示装置。\n\n背景技术\n\n[0002]mini LED技术可以理解为LCD的全面升级版，mini LED的背光层在单位面积内可以容纳更多LED，从而大大提高背光源数量，因此可以进行区域亮度调节的设计，从而在个别区域实现关闭LED从而达到完全的黑色，不仅减小了功耗，而且由于单位面积上LED数量的增加，实现超高对比度和精细的动态分布，让亮场更亮，暗场更暗，从而使得显示效果更佳细致。\n\n[0003]目前，图1为现有技术的mini LED背光模组的结构示意图，如图1所示，mini LED背光是通过多块灯板(每个虚线框为一个灯板)拼接而成的，每块灯板上分布阵列排布的有机发光二极管(LED)多块灯板虽然是采用分开独立扫描的方式进行驱动，但是，多块灯板在一帧显示时段内是同时点亮的，即mini LED背光的每行LED均同时进行工作，即可能会同时被点亮，这样会带来电流波动过大的问题，从而导致有机发光二极管寿命减少、噪声和电磁干扰的问题。\n\n[0004]因此，有必要提出一种mini LED背光模组的驱动方法、驱动电路及显示装置，以解决mini LED背光工作时的电流波动较大的问题。\n\n发明内容\n\n[0005]为了解决上述mini LED背光工作时的电流波动较大的问题，本申请实施例提供一种mini LED背光模组的驱动方法、驱动电路及显示装置。\n\n[0006]第一方面，本申请实施例提供一种mini LED背光模组的驱动方法，所述mini LED背光模组包括k个水平拼接的背光分区，每个所述背光分区包括m行*n列阵列排布的发光元件，m、n和k均为正整数；所述驱动方法包括：\n\n[0007]在每帧显示时段内，依据预设时序提供m个扫描信号，并依据m个所述扫描信号依次扫描所述mini LED背光模组的m行所述发光元件；\n\n[0008]在每帧显示时段内，当所述mini LED背光模组的第i行所述发光元件被扫描时，根据亮度信息依次错开向第1个至第k个所述背光分区输入数据信号，分别使第1个至第k个所述背光分区的第i行所述发光元件同时工作，直至驱动所述mini LED背光模组中的全部所述发光元件进行工作；其中，i为正整数，且1≤i≤m。\n\n[0009]在一些实施例中，所述依次错开向第1个至第k个所述背光分区输入数据信号，分别使第1个至第k个所述背光分区的第i行所述发光元件同时工作，具体包括：\n\n[0010]向第1个所述背光分区输入数据信号，以驱动第1个所述背光分区的第i行的n个所述发光元件同时工作；\n\n[0011]向第2个所述背光分区输入数据信号，以驱动第2个所述背光分区的第i行的n个所述发光元件同时工作；\n\n[0012]以此类推，直至向第k个所述背光分区输入数据信号，以驱动第k个所述背光分区的第i行的n个所述发光元件同时工作。\n\n[0013]在一些实施例中，被连续驱动的两个所述背光分区的第i行所述发光元件的开始点亮时刻间隔一个单位时长，其中，所述单位时长为每个所述背光分区的每行所述发光元件被点亮的耗时。\n\n[0014]在一些实施例中，所述直至驱动所述mini LED背光模组中的全部所述发光元件均被点亮，还包括：\n\n[0015]根据所述亮度信息确定背光灰阶信息，并根据所述背光灰阶信息控制每个所述背光分区的各行所述发光元件被点亮的时长，以使得所述mini LED背光模组提供的背光源达到所述背光灰阶信息所要求的背光灰阶。\n\n[0016]在一些实施例中，每个所述背光分区的面积和形状均相同。\n\n[0017]第一方面，本申请实施例提供一种ini LED背光模组的驱动电路，所述mini LED背光模组包括k个水平拼接的背光分区，每个所述背光分区包括m行*n列发光元件，m、n和k均为正整数；所述驱动电路包括栅极驱动器和源极驱动器，其中：\n\n[0018]所述栅极驱动器用于在每帧显示时段内，依据预设时序提供m个扫描信号，并依据m个所述扫描信号依次扫描所述mini LED背光模组的m行所述发光元件；\n\n[0019]所述源极驱动器用于在每帧显示时段内，当所述mini LED背光模组的第i行所述发光元件被扫描时，根据亮度信息依次错开向第1个至第k个所述背光分区输入数据信号，分别使第1个至第k个所述背光分区的第i行所述发光元件同时工作，直至驱动所述miniLED背光模组中的全部所述发光元件进行工作；其中，i为正整数，且1≤i≤m。\n\n[0020]在一些实施例中，所述源极驱动器还用于，根据所述亮度信息确定背光灰阶信息，并根据所述背光灰阶信息控制每个所述背光分区的各行所述发光元件被点亮的时长，以使得所述mini LED背光模组提供的背光源达到所述背光灰阶信息所要求的背光灰阶。\n\n[0021]在一些实施例中，每个所述背光分区包括多个水平和/或垂直拼接设置的背光灯板，每个所述背光灯板上设置有驱动单元和多个所述发光元件，其中，所述驱动单元分别与多个所述发光元件和所述源极驱动器连接，所述源极驱动器通过所述驱动单元控制多个所述发光元件的发光时长和发光亮度。\n\n[0022]在一些实施例中，所述发光元件为有机发光二极管。\n\n[0023]第三方面，本申请实施例还提供一种显示装置，该显示装置包括mini LED背光模组，以及如上所述的mini LED背光模组的驱动电路，所述mini LED背光模组的驱动电路用于驱动所述mini LED背光模组为所述显示装置提供背光源。\n\n[0024]本申请实施例提供的mini LED背光模组的驱动方法、驱动电路及显示装置，该mini LED背光模组包括k个水平拼接的背光分区，该驱动电路包括栅极驱动器和源极驱动器，在每帧显示时段内，栅极驱动器每提供一个扫描信号为mini LED背光模组的一行发光元件提供工作电能时，源极驱动器就根据亮度信息依次驱动mini LED背光模组中每个水平拼接的背光分区的该行发光元件分别同时工作，也即，源极驱动器分别使多个背光分区中的该行发光元件被同时点亮或同时不点亮，这样将mini LED背光模组中原本需要同时工作的每行发光元件拆分为多个背光分区的该行发光元件分别同时工作，避免了mini LED背光模组中的每行发光元件同时被点亮时带来的背光电流波动过大的问题，以此防止背光电流过大导致的发光元件寿命过短，以及噪声和电磁干扰的问题。\n\n附图说明\n\n[0025]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0026]图1为现有技术的mini LED背光模组的结构示意图。\n\n[0027]图2为现有技术的mini LED背光模组的数据信号的时序示意图。\n\n[0028]图3为本申请实施例提供的mini LED背光模组的驱动电路的结构示意图。\n\n[0029]图4为本申请实施例提供的mini LED背光模组的第一种数据信号的时序示意图。\n\n[0030]图5为现有技术的mini LED背光模组的另一种结构示意图。\n\n[0031]图6为本申请实施例提供的mini LED背光模组的第二种数据信号的时序示意图。\n\n[0032]图7为本申请实施例提供的mini LED背光模组的驱动方法的流程示意图。\n\n具体实施方式\n\n[0033]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0034]如图1所示，以mini LED背光模组包括左、右两个背光分区为例，在一帧显示时间内，左背光分区11和右背光分区12被同时点亮，即左、右背光同一行的LED同时工作，图2为现有技术的mini LED背光模组的数据信号的时序示意图，如图2所示，当左、右背光同一行的LED被扫描信号提供电能时，数据信号同时向左背光分区11和右背光分区12输入数据信号，由此使左背光分区11和右背光分区12的同一行LED被同时打开，这样，每次点亮该miniLED背光模组的一行LED时，会给背光电流带来较大的波动，在同时向左背光分区11和右背光分区12输入数据信号时，背光电流在高电流和低电流之间切换，即背光电流产生较大的波动，这会对mini LED背光模组的LED产生较大的损害，导致LED寿命过短，同时还会带来噪声和电磁干扰的问题。\n\n[0035]针对上述问题，本申请实施例提供一种mini LED背光模组的驱动电路，图3为本申请实施例提供的mini LED背光模组的驱动电路的结构示意图，如图3所示，该mini LED背光模组包括k个水平拼接的背光分区101，每个背光分区101包括m行*n列发光元件；其中，m、n和k均为正整数。该驱动电路包括栅极驱动器和源极驱动器，其中：\n\n[0036]栅极驱动器用于在每帧显示时段内依据预设时序提供m个扫描信号，并依据m个扫描信号依次扫描mini LED背光模组的m行发光元件；\n\n[0037]源极驱动器用于在每帧显示时段内，当mini LED背光模组的第i行发光元件被扫描时，根据亮度信息依次错开向第1个至第k个所述背光分区输入数据信号，分别使第1个至第k个所述背光分区的第i行所述发光元件同时工作，直至驱动mini LED背光模组中的全部发光元件进行工作；其中，i为正整数，1≤i≤m。\n\n[0038]具体地，在每帧显示时段内，首先由栅极驱动器依据预设时序提供m个扫描信号来驱动mini LED背光模组的m行发光元件，即依次通过每个扫描信号驱动对应的一行发光元件，例如，当第i个扫描信号驱动第i行发光元件时，由源极驱动器根据亮度信息来依次错开向第1个至第k个背光分区输入数据信号，分别使第1个至第k个背光分区101的第i行的n个发光元件同时工作，直至使mini LED背光模组中的全部发光元件进行工作。需要说明的是，n个发光元件同时工作是指n个发光元件同时被点亮，或n个发光元件同时不被点亮；亮度信号包括每个背光分区101中m行发光元件分别需要被点亮和不需要被点亮的信息。\n\n[0039]这样，本申请实施例提供的mini LED背光模组的驱动电路，当栅极驱动器为miniLED背光模组的某一行发光元件提供电能时，由于源极驱动器分别向第1个至第k个背光分区101输入数据信号，从而依次驱动水平拼接的第1个至第k个背光分区101的该行发光元件分别同时工作，因此相比于现有技术的通过源极驱动器同时驱动mini LED背光模组的每行发光元件同时工作，该mini LED背光模组的驱动电路能减小电流的幅值和波动，由此防止mini LED背光模组的同一行发光元件同时被点亮而导致的背光电流过大的问题。\n\n[0040]值得注意的是，该mini LED背光模组的驱动电路沿用了栅极驱动器输出的扫描信号的原有时序，仅更改了源极驱动器输出的数据信号的时序，也就是说，该mini LED背光模组的驱动电路可以不对栅极驱动信号输出的扫描信号的时序进行修改，而只是更改源极驱动器输出的数据信号的时序，这样能够简化该mini LED背光模组的驱动电路的工作流程。\n\n[0041]可以理解的是，被连续驱动的两个背光分区101的第i行发光元件的开始点亮时刻间隔一个单位时长，其中，单位时长为每个背光分区101的每行发光元件被点亮的耗时。\n\n[0042]例如，以k＝2，即mini LED背光模组为图1所示的包括左背光分区11和右背光分区12这两个背光分区101为例，图4为本申请实施例提供的mini LED背光模组的第一种数据信号的时序示意图，结合图1和图4所示，假设左背光分区11和右背光分区12中的每行发光元件被点亮需要耗时第一单位时长，则交错驱动左背光分区11和右背光分区12中的同一行发光元件同时工作，即当第i行发光元件被栅极驱动器提供电能时，源极驱动器先向左背光分区11输入数据信号，再向右背光分区12输入数据信号，也就是说，左背光分区11与右背光分区12的数据信号的输入时刻错开一个第一单位时长，需要说明的是，图4中是以mini LED背光模组的发光元件被全部点亮，即向左背光分区11和右背光分区12输入的数据信号均为高电位为例。\n\n[0043]又例如，图5为现有技术的mini LED背光模组的另一种结构示意图，如图5所示，以k＝3，即mini LED背光模组包括分布于左、中、右的第一背光分区21、第二背光分区22和第三背光分区23为例，图6为本申请实施例提供的mini LED背光模组的第二种数据信号的时序示意图，结合图5和图6所示，假设第一背光分区21、第二背光分区22和第三背光分区23中的每行发光元件被点亮需要耗时第二单位时长，则依次驱动第一背光分区21、第二背光分区22和第三背光分区23的同一行发光元件同时工作，即当第i行发光元件被栅极驱动器提供电能时，源极驱动器先向第一背光分区21输入数据信号，再向第二背光分区22输入数据信号，然后向第三背光分区23输入数据信号，也就是说，第一背光分区21、第二背光分区22和第三背光分区23的数据信号的输入时刻依次错开一个第二单位时长，需要说明的是，图6也是以mini LED背光模组的发光元件被全部点亮，即向第一背光分区21、第二背光分区22和第三背光分区23输入的数据信号均为高电位为例。\n\n[0044]需要说明的是，为了在一帧时间内驱动mini LED背光模组中的所有发光元件进行工作，一般不会将mini LED背光模组划分为很多个背光分区101，否则如图4和图6所示，在一帧显示时段内，每个背光分区101可能存在数据信号的脉冲个数不够，导致部分发光元件无法被驱动点亮，因此，k一般不大于10，也即，将mini LED背光模组划分为不大于10个水平拼接的背光分区101。\n\n[0045]经过实际试验可知，本申请实施例提供的mini LED背光模组的驱动电路能减小背光电流的幅值和波动。\n\n[0046]需要强调的是，分别向第1个至第k个背光分区101输入数据信号，是为了减小miniLED背光模组的某行发光元件同时被点亮时的电流幅值和波动，针对某个背光分区101而言，如果某行发光元件无需被点亮，即此时向该背光分区101输入的数据信号为低电平，则此时背光电流本身就较小。而本申请实施例提供的mini LED背光模组的驱动电路，旨在减小的是总体背光的电流波动。\n\n[0047]基于上述实施例，基于伽马曲线，可以根据亮度信号能确定背光灰阶信息，因此在该mini LED背光模组的驱动电路中，源极驱动器还用于，根据亮度信息确定背光灰阶信息，并根据背光灰阶信息控制每个背光分区101的各行发光元件被点亮的时长，以使得miniLED背光模组提供的背光源达到背光灰阶信息所要求的背光灰阶。\n\n[0048]在一些实施例中，每个背光分区101的面积和形状均相同。\n\n[0049]在一些实施例中，每个背光分区101包括多个水平和/或垂直拼接设置的背光灯板，如图1所示，每个背光分区101由4个背光灯板(每个虚线框表示一个背光灯板)拼接而成，其中，每2个背光灯板水平拼接，然后再将每2个水平拼接的背光灯板垂直拼接形成每个背光分区101；如图5所示，每个背光分区101由2个背光灯板(每个虚线表示一个背光灯板)垂直拼接而成。\n\n[0050]进一步地，每个背光灯板上设置有驱动单元(附图中未示出)和多个发光元件，其中，每个背光灯板的驱动单元分别与多个发光元件和源极驱动器连接，源极驱动器通过驱动单元控制多个发光元件的发光时长和发光亮度。\n\n[0051]需要说明的是，该mini LED背光模组的发光元件一般采用有机发光二极管。\n\n[0052]图7为本申请实施例提供的mini LED背光模组的驱动方法的流程示意图，如图7所示，本申请实施例还提供一种mini LED背光模组的驱动方法，应用于如上所述的mini LED背光模组的驱动电路，该驱动电路包括栅极驱动器，源极驱动器和k个水平拼接的背光分区，每个背光分区包括m行*n列发光元件；其中，m、n和k均为正整数；该驱动方法包括：\n\n[0053]S1、在每帧显示时段内，依据预设时序提供m个扫描信号，并依据m个扫描信号依次扫描mini LED背光模组的m行发光元件；\n\n[0054]S2、在每帧显示时段内，当mini LED背光模组的第i行发光元件被扫描时，根据亮度信息依次错开向第1个至第k个背光分区输入数据信号，分别使第1个至第k个背光分区的第i行发光元件同时工作，直至驱动mini LED背光模组中的全部发光元件进行工作；其中，i为正整数，且1≤i≤m。\n\n[0055]基于上述实施例，步骤S2中，依次错开向第1个至第k个背光分区输入数据信号，分别使第1个至第k个背光分区的第i行发光元件同时工作，具体包括：\n\n[0056]向第1个背光分区输入数据信号，以驱动第1个背光分区的第i行的n个发光元件同时工作；\n\n[0057]向第2个背光分区输入数据信号，以驱动第2个背光分区的第i行的n个发光元件同时工作；\n\n[0058]以此类推，直至向第k个背光分区输入数据信号，以驱动第k个背光分区的第i行的n个发光元件同时工作。\n\n[0059]也就是说，当mini LED背光模组的某一行发光元件被扫描时，k个背光分区101被依次输入数据信号，使得第1个背光分区101的该行的n个发光元件同时被点亮之后，第2个背光分区101的该行的n个发光元件同时被点亮，然后第3个背光分区101的该行的n个发光元件同时被点亮，以此类推，直至第k个背光分区101的该行的n个发光元件同时被点亮。这样，mini LED背光模组的所有发光元件均被点亮。\n\n[0060]基于上述实施例，步骤S2中，直至驱动mini LED背光模组中的全部发光元件均被点亮，还包括：根据亮度信息确定背光灰阶信息，并根据背光灰阶信息控制每个背光分区101的各行发光元件被点亮的时长，以使得mini LED背光模组提供的背光源达到背光灰阶信息所要求的背光灰阶。\n\n[0061]基于同一发明构思，本申请实施例还提供一种显示装置，该显示装置包括miniLED背光模组，以及如上所述的mini LED背光模组的驱动电路，其中，mini LED背光模组的驱动电路用于驱动mini LED背光模组为显示装置提供背光源。该显示装置与该mini LED背光模组的驱动电路具有相同的结构和有益效果，由于上述各实施例已经对该mini LED背光模组的驱动电路进行了详细的描述，此处不再赘述。\n\n[0062]本申请实施例提供的mini LED背光模组的驱动方法、驱动电路及显示装置，该mini LED背光模组包括k个水平拼接的背光分区101，该驱动电路包括栅极驱动器和源极驱动器，在每帧显示时段内，栅极驱动器每提供一个扫描信号为mini LED背光模组的一行发光元件提供工作电能时，源极驱动器就根据亮度信息依次驱动mini LED背光模组中每个水平拼接的背光分区101的该行发光元件同时工作，也即，源极驱动器分别使多个背光分区101中的该行发光元件被同时点亮或同时不点亮，这样将mini LED背光模组中原本需要同时工作的每行发光元件拆分为多个背光分区101的该行发光元件，避免了mini LED背光模组中的该行发光元件同时被点亮时带来的背光电流波动过大的问题，以此防止背光电流过大导致的发光元件寿命过短，以及噪声和电磁干扰的问题。\n\n[0063]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0064]以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10925, 23979, '技术领域\n\n[0001]本发明涉及微发光技术领域，尤其涉及一种微发光二极管背板的返修设备及其返修方法。\n\n背景技术\n\n[0002]相比于液晶显示器、OLED(Organic Light-Emitting Diode，有机发光二极管)显示器，Micro-LED和Mini-LED显示技术具有反应快、高色域、高PPI(Pixels Per Inch，每英寸所拥有的像素数量)、低能耗等优势；但其技术难点多且技术复杂，尤其是其巨量转移技术、LED颗粒微型化成为技术瓶颈。\n\n[0003]在Micro-LED或Mini-LED显示灯板的制作过程中，LED转移过程均无法达到100％的转移良率，在此情况下转移后的检测及自动返修流程必不可少，乃至成为提升生产效率、确保良率的必备工序。\n\n[0004]目前业内自动返修设备的工艺流程为：去除异常点LED以及去除LED后残留的锡膏；利用探针两次蘸取锡膏放在两个焊盘上；吸嘴吸取新的LED芯片放在去除异常点后的焊盘上；激光焊接，完成异常点LED返修。现在的工艺流程存在的技术问题为：在探针蘸取锡膏放置在焊盘上后，每次返回到锡膏池处前需经过一次清洗针头，再进行下一次的锡膏蘸取，效率较为低下；在吸嘴吸取新的LED芯片后放置在焊盘上，然后再激光进行焊接，由于激光能量和锡膏形变的不可控性易导致芯片焊接偏移，从而导致焊接良率降低。\n\n发明内容\n\n[0005]本发明实施例提供一种微发光二极管背板的返修设备及其返修方法，以解决现有的探针点印锡膏的效率较为低下的技术问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明实施例提供一种微发光二极管背板的返修设备，包括支撑部件以及点印装置，所述支撑部件用于支撑目标背板，所述点印装置用于向所述目标背板的焊盘处施加锡膏；其中，所述点印装置包括间隔设置的多个点印探针。\n\n[0008]在本发明的至少一种实施例中，所述点印装置还包括驱动部件，所述驱动部件的动力输出端至少与其中一个所述点印探针连接，所述驱动部件驱动至少一个所述点印探针移动，以调节所述多个点印探针之间的间距。\n\n[0009]在本发明的至少一种实施例中，任一相邻两个所述点印探针之间的间距的调节范围为0.1～20毫米。\n\n[0010]在本发明的至少一种实施例中，所述点印探针的材料包括钨、钨铼合金、钢中的任意一种。\n\n[0011]在本发明的至少一种实施例中，所述返修设备还包括吸晶装置，上所述吸晶装置包括用于吸附微发光二极管芯片的吸头。\n\n[0012]在本发明的至少一种实施例中，所述返修设备还包括激光照射装置，所述激光照射装置用于将微发光二极管芯片焊接至所述焊盘上。\n\n[0013]相应地，本发明实施例还提供一种微发光二极管背板的返修方法，包括以下步骤：\n\n[0014]S10，提供一种微发光二极管背板的返修设备，包括支撑部件、激光照射装置、具有吸头的吸晶装置以及点印装置，其中，所述点印装置包括间隔设置的多个点印探针；\n\n[0015]S20，去除背板上检测到的异常点处的第一微发光二极管芯片及残留锡膏；\n\n[0016]S30，利用所述多个点印探针将锡膏施加在所述异常点处的焊盘上；\n\n[0017]S40，利用所述吸头将第二微发光二极管芯片转移至所述焊盘上，通过所述激光照射装置将所述第二微发光二极管芯片与所述焊盘进行激光焊接。\n\n[0018]在本发明的至少一种实施例中，在所述S40中，在进行激光焊接过程中，所述吸头保持吸附所述第二微发光二极管芯片的状态。\n\n[0019]在本发明的至少一种实施例中，所述点印装置还包括驱动部件，所述驱动部件的动力输出端至少与其中一个所述点印探针连接，所述驱动部件驱动至少一个所述点印探针移动，以调节所述多个点印探针之间的间距。\n\n[0020]在本发明的至少一种实施例中，任一相邻的两个所述点印探针之间的间距的调节范围为0.1～20毫米。\n\n[0021]本发明的有益效果为：通过设置多个点印探针可一次性满足单个异常点的锡膏点印量，或者同时进行多个异常点的锡膏点印，从而提高返修设备的返修效率，另外在激光焊接过程中，保持吸头对LED芯片的吸附状态，可防止激光能量波段和锡膏变形导致的LED芯片偏移的现象发生，从而提高返修良率。\n\n附图说明\n\n[0022]图1为本发明实施例提供的微发光二极管芯片的返修过程的结构示意图；\n\n[0023]图2为本发明其他实施例提供的微发光二极管芯片的返修过程的结构示意图；\n\n[0024]图3为本发明又一实施例提供的微发光二极管芯片的返修过程的结构示意图；\n\n[0025]图4为本发明实施例提供的微发光二极管芯片的返修方法的步骤流程图。\n\n具体实施方式\n\n[0026]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0027]在本申请的描述中，需要理解的是，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0028]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0029]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0030]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0031]微发光二极管背板在制备过程中，LED的转印良率无法达到100％，需要返修设备对其进行检测以提高背板的良率，但现有的探针点印锡膏的效率较为低下，本发明提出本实施例以克服上述缺陷。\n\n[0032]请参阅图1，本发明实施例提供一种微发光二极管背板的返修设备，包括支撑部件、激光照射装置、吸晶装置以及点印装置，其中，支撑部件用于向目标背板的焊盘处施加锡膏，所述激光照射装置发射激光23用于将微发光二极管芯片焊接至所述焊盘上，所述吸晶装置包括吸头22，所述吸头22用以吸附设置在背板11上的微发光二极管芯片，所述点印装置包括间隔设置的多个点印探针21，所述点印探针21用以将锡膏点印在背板11上，所述目标背板为具有LED转印不良点的微发光二极管背板。\n\n[0033]现有的微发光二极管背板在制备过程中一般包括：TFT基板的制作、白油制程、SMT贴片等。其中在SMT贴片是一种表面贴装技术，其目的是将LED灯逐个转移到TFT基板上，其工序可分为：清洗、印刷锡膏、LED贴片、回流焊、检测、自动返修、初步可靠性验证等。在Micro-LED或Mini LED背板制作时，LED的转移均无法达到100％的转移良率，在此情况下转移后的检测及自动返修流程必不可少。\n\n[0034]但目前的自动返修设备在剔除异常点的LED和残留锡膏后，每个异常点处需要进行两次探针蘸取锡膏放在正、负极焊盘上的工艺，在探针每次蘸取锡膏放置在焊盘上后，均需返回到锡膏池前进行一次清洗枕头的工艺，以保证下次蘸取的锡膏量尽量保持一致，这个过程会减低返修的效率。因此本发明通过将返修设备由一个点印探针替换为多个点印探针的设计，可以使得在返修过程中重新点印异常点处的锡膏时，所述返修设备可以一次性完成单个异常点处的两个焊盘处的锡膏点印，或者同时进行多个异常点处的锡膏点印，提高对微发光二极管背板的返修效率。\n\n[0035]一种实施例中，所述点印装置还包括驱动部件，所述驱动部件的动力输出端至少与其中一个所述点印探针21连接，所述驱动部件驱动至少一个所述点印探针21移动，以调节所述多个点印探针21之间的间距。\n\n[0036]其中，所述多个点印探针21可独立运作，既可同时进行一个异常点处的两个焊盘的锡膏点印，也可分别同时进行多个异常点处的焊盘的锡膏点印。\n\n[0037]所述多个点印探针21相对于所述背板11在同一水平面上，所述驱动部件用以调节所述多个点印探针21在水平方向的间距。通过将多个点印探针21之间的间距设置为可调节，可适用于不同规格的LED芯片间距的背板设计。\n\n[0038]一种实施例中，所述驱动部件可包括轴承和电机，所述电极可选用高精度电机。两个点印探针21之间的距离的调节方式，在此不做限定，可参考现有技术。\n\n[0039]一种实施例中，所述两个点印探针21之间的间距的调节范围为0.1～20毫米，以满足不同间距调节的需求。\n\n[0040]请参阅图1，一种实施例中，所述点印装置可包括两个点印探针21，所述两个点印探针21可一次性完成单个异常点处的锡膏点印工艺。\n\n[0041]在有些实施例中，所述点印装置可包括大于两个的多个点印探针21，所述多个点印探针21可对同一目标背板的多个异常点处的焊盘同时进行锡膏点印，如图2所示。\n\n[0042]请参阅图3，在有些实施例中，所述多个点印探针21可对多个目标背板的异常点处的焊盘12同时进行锡膏点印。\n\n[0043]所述点印探针21的具体数量视实际工艺需要及工艺条件而定，这里不做限制。当所述点印探针的数量大于2时，所述驱动部件的动力输出端可与每一所述点印探针21连接，以驱动点印探针21能够运动到目标位置。\n\n[0044]优选地，所述驱动部件驱动所述点印探针21在第一方向和第二方向上移动，所述第一方向和所述第二方向相交，所述第一方向和所述第二方向所形成的平面与所述背板11所在的表面平行。\n\n[0045]所述点印探针21的材料包括钨(W)、钨铼合金(ReW)、钢中的任意一种，但不限于此，所述点印探针21的材料还可为其他耐腐蚀、可清洗的材料，但需保证的是不与锡膏在常温状态下发生明显扩散即可。\n\n[0046]本发明实施例的微发光二极管背板的返修设备在利用吸头22将新的LED芯片14放置在焊盘12上后，利用激光照射装置发射出来的激光23对LED芯片14与焊盘12进行激光焊接的过程中，始终保持所述吸头22吸附LED芯片14的状态，待激光焊接完成后再停止激光23的照射及吸附LED芯片的作业。通过吸附LED芯片的同时进行激光焊接，能够防止激光能量波动及锡膏变形不可控性而导致的偏移，从而提高返修的良率。\n\n[0047]一种实施例中，所述吸头22的吸附力可设置在10～1000牛之间，以起到足够的吸附力和固定LED芯片的作用。\n\n[0048]请参阅图4，针对上述微发光二极管背板的返修设备，本发明实施例还提供一种微发光二极管背板的返修方法，包括以下步骤：\n\n[0049]S10，提供一种微发光二极管背板的返修设备，包括支撑部件、激光照射装置、具有吸头22的吸晶装置以及点印装置，其中，所述点印装置包括间隔设置的多个点印探针21；\n\n[0050]S20，去除目标背板的多个异常点处的第一微发光二极管芯片14’及残留锡膏13’；\n\n[0051]S30，利用所述多个点印探针21将锡膏13施加在至少一个所述异常点处的焊盘12上；\n\n[0052]S40，利用所述吸头22将第二微发光二极管芯片14转移至所述焊盘12上，通过所述激光照射装置将所述第二微发光二极管芯片14与所述焊盘12进行激光焊接。\n\n[0053]具体地，去除所述背板11上的多个异常点处的第一微发光二极管芯片14’和残留锡膏13’的过程包括：利用激光照射装置对异常点处的第一微发光二极管芯片14’照射激光23以进行加热，利用返修设备的风枪将异常点处的第一微发光二极管芯片14’及锡膏吹扫出去并回收，之后对未被完全清除的残留锡膏13’进行在次处理以完全去除锡膏。\n\n[0054]所述点印装置还包括驱动部件，所述驱动部件的动力输出端至少与其中一个所述点印探针21连接，所述驱动部件驱动至少一个所述点印探针21移动，以调节所述多个点印探针21之间的间距。\n\n[0055]所述多个点印探针21可独立运作，即可同时点印一个异常点处的锡膏，也可分别同时进行多个异常点处的锡膏。\n\n[0056]在利用点印探针21点印锡膏13之前，利用所述驱动部件调节好相邻两个点印探针21之间的间距，以使得多个点印探针21在不同位置同时点印锡膏13时，使得锡膏13分别落在所述背板11上的各个焊盘12所在的区域内，其中，一个异常点处包括两个焊盘，所述两个焊盘12分别为正极焊盘、负极焊盘，所述两个焊盘12后续分别与所述第二微发光二极管芯片14’的两个引脚焊接。\n\n[0057]请参阅图1，本发明实施例以在一个异常点处的两个焊盘上同时点印锡膏为例进行说明，其中返修设备可包括两个点印探针21。在调节好两个点印探针21的间距后，所述两个点印探针21仅需进行一次的蘸取锡膏动作便可完成单个异常点的锡膏点印，不需进行两次锡膏点印。所述两个点印探针21完成锡膏点印后，返回所述返修设备的锡膏池附近清洗，为下次异常点的锡膏点印做准备，所述两个点印探针21的同时点印功能能够提高所述返修设备的锡膏点印效率。\n\n[0058]在其他实施例中，还可对同一目标背板上的多个异常点的焊盘同时点印锡膏，也可对多个目标背板上的异常点处的焊盘同时点印锡膏，以提高返修设备的锡膏点印效率。\n\n[0059]在所述S40中，在进行激光焊接过程中，所述吸头22始终保持吸附所述第二微发光二极管芯片14的状态。\n\n[0060]具体地，所述吸头22吸附所述第二微发光二极管芯片14，将所述第二微发光二极管芯片14放置于所述焊盘12上后，所述吸头22继续保持吸附所述第二微光二极管芯片14的状态，之后利用所述激光照射装置对所述第二微发光二极管芯片14进行加热，以实现对所述第二微发光二极管芯片14与所述焊盘12的激光焊接，在焊接完成后再停止所述吸头22的吸附作业和激光作业。\n\n[0061]所述吸头的吸附力可控制在10～1000牛之间，以保持足够的吸附力度从而起到固定芯片的作用，具体数值实际情况而定，这里不做限制。\n\n[0062]在激光焊接过程中，由于激光能量波动和锡膏变形的不可控性会导致芯片偏移，因此本发明实施例在激光焊接过程中，吸头22一直保持吸附第二微发光二极管芯片14的状态，能够避免因激光作业而导致芯片偏移的现象发生。\n\n[0063]本发明实施例提到的第一微发光二极管芯片、第二微发光二极管芯片包括Micro-LED、Mini-LED中的任意一种。\n\n[0064]本发明实施例的背板11可为玻璃基板，但不限于此。\n\n[0065]一种实施例中，所述背板11上还可设置有驱动LED显示的薄膜晶体管阵列。\n\n[0066]本发明实施例提到的微发光二极管背板包括但不限于用于实现彩色显示的微发光二极管显示背板、提供背光源的微发光二极管背板。\n\n[0067]本发明实施例通过设置多个点印探针可一次性满足单个异常点的锡膏点印量，或者同时进行多个异常点的锡膏点印，从而提高返修设备的返修效率，另外在激光焊接过程中，保持吸头对LED芯片的吸附状态，可防止激光能量波段和锡膏变形导致的LED芯片偏移的现象发生，从而提高返修良率。\n\n[0068]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0069]以上对本发明实施例所提供的一种微发光二极管背板的返修设备及其返修方法进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。', '技术领域\n\n[0001]本发明涉及微发光技术领域，尤其涉及一种微发光二极管背板的返修设备及其返修方法。\n\n背景技术\n\n[0002]相比于液晶显示器、OLED(Organic Light-Emitting Diode，有机发光二极管)显示器，Micro-LED和Mini-LED显示技术具有反应快、高色域、高PPI(Pixels Per Inch，每英寸所拥有的像素数量)、低能耗等优势；但其技术难点多且技术复杂，尤其是其巨量转移技术、LED颗粒微型化成为技术瓶颈。\n\n[0003]在Micro-LED或Mini-LED显示灯板的制作过程中，LED转移过程均无法达到100％的转移良率，在此情况下转移后的检测及自动返修流程必不可少，乃至成为提升生产效率、确保良率的必备工序。\n\n[0004]目前业内自动返修设备的工艺流程为：去除异常点LED以及去除LED后残留的锡膏；利用探针两次蘸取锡膏放在两个焊盘上；吸嘴吸取新的LED芯片放在去除异常点后的焊盘上；激光焊接，完成异常点LED返修。现在的工艺流程存在的技术问题为：在探针蘸取锡膏放置在焊盘上后，每次返回到锡膏池处前需经过一次清洗针头，再进行下一次的锡膏蘸取，效率较为低下；在吸嘴吸取新的LED芯片后放置在焊盘上，然后再激光进行焊接，由于激光能量和锡膏形变的不可控性易导致芯片焊接偏移，从而导致焊接良率降低。\n\n发明内容\n\n[0005]本发明实施例提供一种微发光二极管背板的返修设备及其返修方法，以解决现有的探针点印锡膏的效率较为低下的技术问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]本发明实施例提供一种微发光二极管背板的返修设备，包括支撑部件以及点印装置，所述支撑部件用于支撑目标背板，所述点印装置用于向所述目标背板的焊盘处施加锡膏；其中，所述点印装置包括间隔设置的多个点印探针。\n\n[0008]在本发明的至少一种实施例中，所述点印装置还包括驱动部件，所述驱动部件的动力输出端至少与其中一个所述点印探针连接，所述驱动部件驱动至少一个所述点印探针移动，以调节所述多个点印探针之间的间距。\n\n[0009]在本发明的至少一种实施例中，任一相邻两个所述点印探针之间的间距的调节范围为0.1～20毫米。\n\n[0010]在本发明的至少一种实施例中，所述点印探针的材料包括钨、钨铼合金、钢中的任意一种。\n\n[0011]在本发明的至少一种实施例中，所述返修设备还包括吸晶装置，上所述吸晶装置包括用于吸附微发光二极管芯片的吸头。\n\n[0012]在本发明的至少一种实施例中，所述返修设备还包括激光照射装置，所述激光照射装置用于将微发光二极管芯片焊接至所述焊盘上。\n\n[0013]相应地，本发明实施例还提供一种微发光二极管背板的返修方法，包括以下步骤：\n\n[0014]S10，提供一种微发光二极管背板的返修设备，包括支撑部件、激光照射装置、具有吸头的吸晶装置以及点印装置，其中，所述点印装置包括间隔设置的多个点印探针；\n\n[0015]S20，去除背板上检测到的异常点处的第一微发光二极管芯片及残留锡膏；\n\n[0016]S30，利用所述多个点印探针将锡膏施加在所述异常点处的焊盘上；\n\n[0017]S40，利用所述吸头将第二微发光二极管芯片转移至所述焊盘上，通过所述激光照射装置将所述第二微发光二极管芯片与所述焊盘进行激光焊接。\n\n[0018]在本发明的至少一种实施例中，在所述S40中，在进行激光焊接过程中，所述吸头保持吸附所述第二微发光二极管芯片的状态。\n\n[0019]在本发明的至少一种实施例中，所述点印装置还包括驱动部件，所述驱动部件的动力输出端至少与其中一个所述点印探针连接，所述驱动部件驱动至少一个所述点印探针移动，以调节所述多个点印探针之间的间距。\n\n[0020]在本发明的至少一种实施例中，任一相邻的两个所述点印探针之间的间距的调节范围为0.1～20毫米。\n\n[0021]本发明的有益效果为：通过设置多个点印探针可一次性满足单个异常点的锡膏点印量，或者同时进行多个异常点的锡膏点印，从而提高返修设备的返修效率，另外在激光焊接过程中，保持吸头对LED芯片的吸附状态，可防止激光能量波段和锡膏变形导致的LED芯片偏移的现象发生，从而提高返修良率。\n\n附图说明\n\n[0022]图1为本发明实施例提供的微发光二极管芯片的返修过程的结构示意图；\n\n[0023]图2为本发明其他实施例提供的微发光二极管芯片的返修过程的结构示意图；\n\n[0024]图3为本发明又一实施例提供的微发光二极管芯片的返修过程的结构示意图；\n\n[0025]图4为本发明实施例提供的微发光二极管芯片的返修方法的步骤流程图。\n\n具体实施方式\n\n[0026]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0027]在本申请的描述中，需要理解的是，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0028]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0029]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0030]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0031]微发光二极管背板在制备过程中，LED的转印良率无法达到100％，需要返修设备对其进行检测以提高背板的良率，但现有的探针点印锡膏的效率较为低下，本发明提出本实施例以克服上述缺陷。\n\n[0032]请参阅图1，本发明实施例提供一种微发光二极管背板的返修设备，包括支撑部件、激光照射装置、吸晶装置以及点印装置，其中，支撑部件用于向目标背板的焊盘处施加锡膏，所述激光照射装置发射激光23用于将微发光二极管芯片焊接至所述焊盘上，所述吸晶装置包括吸头22，所述吸头22用以吸附设置在背板11上的微发光二极管芯片，所述点印装置包括间隔设置的多个点印探针21，所述点印探针21用以将锡膏点印在背板11上，所述目标背板为具有LED转印不良点的微发光二极管背板。\n\n[0033]现有的微发光二极管背板在制备过程中一般包括：TFT基板的制作、白油制程、SMT贴片等。其中在SMT贴片是一种表面贴装技术，其目的是将LED灯逐个转移到TFT基板上，其工序可分为：清洗、印刷锡膏、LED贴片、回流焊、检测、自动返修、初步可靠性验证等。在Micro-LED或Mini LED背板制作时，LED的转移均无法达到100％的转移良率，在此情况下转移后的检测及自动返修流程必不可少。\n\n[0034]但目前的自动返修设备在剔除异常点的LED和残留锡膏后，每个异常点处需要进行两次探针蘸取锡膏放在正、负极焊盘上的工艺，在探针每次蘸取锡膏放置在焊盘上后，均需返回到锡膏池前进行一次清洗枕头的工艺，以保证下次蘸取的锡膏量尽量保持一致，这个过程会减低返修的效率。因此本发明通过将返修设备由一个点印探针替换为多个点印探针的设计，可以使得在返修过程中重新点印异常点处的锡膏时，所述返修设备可以一次性完成单个异常点处的两个焊盘处的锡膏点印，或者同时进行多个异常点处的锡膏点印，提高对微发光二极管背板的返修效率。\n\n[0035]一种实施例中，所述点印装置还包括驱动部件，所述驱动部件的动力输出端至少与其中一个所述点印探针21连接，所述驱动部件驱动至少一个所述点印探针21移动，以调节所述多个点印探针21之间的间距。\n\n[0036]其中，所述多个点印探针21可独立运作，既可同时进行一个异常点处的两个焊盘的锡膏点印，也可分别同时进行多个异常点处的焊盘的锡膏点印。\n\n[0037]所述多个点印探针21相对于所述背板11在同一水平面上，所述驱动部件用以调节所述多个点印探针21在水平方向的间距。通过将多个点印探针21之间的间距设置为可调节，可适用于不同规格的LED芯片间距的背板设计。\n\n[0038]一种实施例中，所述驱动部件可包括轴承和电机，所述电极可选用高精度电机。两个点印探针21之间的距离的调节方式，在此不做限定，可参考现有技术。\n\n[0039]一种实施例中，所述两个点印探针21之间的间距的调节范围为0.1～20毫米，以满足不同间距调节的需求。\n\n[0040]请参阅图1，一种实施例中，所述点印装置可包括两个点印探针21，所述两个点印探针21可一次性完成单个异常点处的锡膏点印工艺。\n\n[0041]在有些实施例中，所述点印装置可包括大于两个的多个点印探针21，所述多个点印探针21可对同一目标背板的多个异常点处的焊盘同时进行锡膏点印，如图2所示。\n\n[0042]请参阅图3，在有些实施例中，所述多个点印探针21可对多个目标背板的异常点处的焊盘12同时进行锡膏点印。\n\n[0043]所述点印探针21的具体数量视实际工艺需要及工艺条件而定，这里不做限制。当所述点印探针的数量大于2时，所述驱动部件的动力输出端可与每一所述点印探针21连接，以驱动点印探针21能够运动到目标位置。\n\n[0044]优选地，所述驱动部件驱动所述点印探针21在第一方向和第二方向上移动，所述第一方向和所述第二方向相交，所述第一方向和所述第二方向所形成的平面与所述背板11所在的表面平行。\n\n[0045]所述点印探针21的材料包括钨(W)、钨铼合金(ReW)、钢中的任意一种，但不限于此，所述点印探针21的材料还可为其他耐腐蚀、可清洗的材料，但需保证的是不与锡膏在常温状态下发生明显扩散即可。\n\n[0046]本发明实施例的微发光二极管背板的返修设备在利用吸头22将新的LED芯片14放置在焊盘12上后，利用激光照射装置发射出来的激光23对LED芯片14与焊盘12进行激光焊接的过程中，始终保持所述吸头22吸附LED芯片14的状态，待激光焊接完成后再停止激光23的照射及吸附LED芯片的作业。通过吸附LED芯片的同时进行激光焊接，能够防止激光能量波动及锡膏变形不可控性而导致的偏移，从而提高返修的良率。\n\n[0047]一种实施例中，所述吸头22的吸附力可设置在10～1000牛之间，以起到足够的吸附力和固定LED芯片的作用。\n\n[0048]请参阅图4，针对上述微发光二极管背板的返修设备，本发明实施例还提供一种微发光二极管背板的返修方法，包括以下步骤：\n\n[0049]S10，提供一种微发光二极管背板的返修设备，包括支撑部件、激光照射装置、具有吸头22的吸晶装置以及点印装置，其中，所述点印装置包括间隔设置的多个点印探针21；\n\n[0050]S20，去除目标背板的多个异常点处的第一微发光二极管芯片14’及残留锡膏13’；\n\n[0051]S30，利用所述多个点印探针21将锡膏13施加在至少一个所述异常点处的焊盘12上；\n\n[0052]S40，利用所述吸头22将第二微发光二极管芯片14转移至所述焊盘12上，通过所述激光照射装置将所述第二微发光二极管芯片14与所述焊盘12进行激光焊接。\n\n[0053]具体地，去除所述背板11上的多个异常点处的第一微发光二极管芯片14’和残留锡膏13’的过程包括：利用激光照射装置对异常点处的第一微发光二极管芯片14’照射激光23以进行加热，利用返修设备的风枪将异常点处的第一微发光二极管芯片14’及锡膏吹扫出去并回收，之后对未被完全清除的残留锡膏13’进行在次处理以完全去除锡膏。\n\n[0054]所述点印装置还包括驱动部件，所述驱动部件的动力输出端至少与其中一个所述点印探针21连接，所述驱动部件驱动至少一个所述点印探针21移动，以调节所述多个点印探针21之间的间距。\n\n[0055]所述多个点印探针21可独立运作，即可同时点印一个异常点处的锡膏，也可分别同时进行多个异常点处的锡膏。\n\n[0056]在利用点印探针21点印锡膏13之前，利用所述驱动部件调节好相邻两个点印探针21之间的间距，以使得多个点印探针21在不同位置同时点印锡膏13时，使得锡膏13分别落在所述背板11上的各个焊盘12所在的区域内，其中，一个异常点处包括两个焊盘，所述两个焊盘12分别为正极焊盘、负极焊盘，所述两个焊盘12后续分别与所述第二微发光二极管芯片14’的两个引脚焊接。\n\n[0057]请参阅图1，本发明实施例以在一个异常点处的两个焊盘上同时点印锡膏为例进行说明，其中返修设备可包括两个点印探针21。在调节好两个点印探针21的间距后，所述两个点印探针21仅需进行一次的蘸取锡膏动作便可完成单个异常点的锡膏点印，不需进行两次锡膏点印。所述两个点印探针21完成锡膏点印后，返回所述返修设备的锡膏池附近清洗，为下次异常点的锡膏点印做准备，所述两个点印探针21的同时点印功能能够提高所述返修设备的锡膏点印效率。\n\n[0058]在其他实施例中，还可对同一目标背板上的多个异常点的焊盘同时点印锡膏，也可对多个目标背板上的异常点处的焊盘同时点印锡膏，以提高返修设备的锡膏点印效率。\n\n[0059]在所述S40中，在进行激光焊接过程中，所述吸头22始终保持吸附所述第二微发光二极管芯片14的状态。\n\n[0060]具体地，所述吸头22吸附所述第二微发光二极管芯片14，将所述第二微发光二极管芯片14放置于所述焊盘12上后，所述吸头22继续保持吸附所述第二微光二极管芯片14的状态，之后利用所述激光照射装置对所述第二微发光二极管芯片14进行加热，以实现对所述第二微发光二极管芯片14与所述焊盘12的激光焊接，在焊接完成后再停止所述吸头22的吸附作业和激光作业。\n\n[0061]所述吸头的吸附力可控制在10～1000牛之间，以保持足够的吸附力度从而起到固定芯片的作用，具体数值实际情况而定，这里不做限制。\n\n[0062]在激光焊接过程中，由于激光能量波动和锡膏变形的不可控性会导致芯片偏移，因此本发明实施例在激光焊接过程中，吸头22一直保持吸附第二微发光二极管芯片14的状态，能够避免因激光作业而导致芯片偏移的现象发生。\n\n[0063]本发明实施例提到的第一微发光二极管芯片、第二微发光二极管芯片包括Micro-LED、Mini-LED中的任意一种。\n\n[0064]本发明实施例的背板11可为玻璃基板，但不限于此。\n\n[0065]一种实施例中，所述背板11上还可设置有驱动LED显示的薄膜晶体管阵列。\n\n[0066]本发明实施例提到的微发光二极管背板包括但不限于用于实现彩色显示的微发光二极管显示背板、提供背光源的微发光二极管背板。\n\n[0067]本发明实施例通过设置多个点印探针可一次性满足单个异常点的锡膏点印量，或者同时进行多个异常点的锡膏点印，从而提高返修设备的返修效率，另外在激光焊接过程中，保持吸头对LED芯片的吸附状态，可防止激光能量波段和锡膏变形导致的LED芯片偏移的现象发生，从而提高返修良率。\n\n[0068]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0069]以上对本发明实施例所提供的一种微发光二极管背板的返修设备及其返修方法进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10926, 23980, '技术领域\n\n[0001]本申请涉及miniLED显示面板技术领域，具体涉及一种QD-miniLED显示面板和一种QD-miniLED显示面板制备方法。\n\n背景技术\n\n[0002]目前的发光器件结构包括两个基板，其中量子点色转换层位于彩膜基板，发光器件位于阵列基板，所述量子点色转换层需与发光器件对位设置，因此，所述彩膜基板与所述阵列基板需要精密对位贴合形成完整器件，两块基板之间的间隙往往较大，这样蓝色背光会经过较长光程而容易出射到相邻像素，产生光串扰问题。\n\n[0003]因此，现有发光器件结构存在蓝色背光出射到相邻像素发生光串扰的技术问题。\n\n发明内容\n\n[0004]本申请实施例提供一种QD-miniLED显示面板和一种QD-miniLED显示面板制备方法，可以缓解现有miniLED显示面板存在蓝色背光出射到相邻像素发生光串扰的技术问题。\n\n[0005]本申请提供一种QD-miniLED显示面板，包括第一衬底、以及多个独立位于所述第一衬底上的发光器件，所述发光器件包括位于所述第一衬底上的P极和N极、位于所述P极和N极上的P型接触层、位于所述P型接触层上的有源层、位于所述有源层上的N型接触层、位于所述N型接触层上的第二衬底，其中，部分所述发光器件还包括位于所述第二衬底远离所述第一衬底一侧的量子点色转换层。\n\n[0006]可选的，在本申请的一些实施例中，所述红色发光器件、所述绿色发光器件还包括设置在所述第二衬底与所述量子点色转换层之间的隔热层。\n\n[0007]可选的，在本申请的一些实施例中，所述发光器件包括红色发光器件、绿色发光器件、蓝色发光器件，其中，所述红色发光器件、绿色发光器件包括所述量子点色转换层，所述蓝色发光器件未设置所述量子点色转换层。\n\n[0008]可选的，在本申请的一些实施例中，所述量子点色转换层包括红色量子点色转换层和绿色量子点色转换层，所述红色发光器件包括红色量子点色转换层，所述绿色发光器件包括绿色量子点色转换层。\n\n[0009]可选的，在本申请的一些实施例中，所述第二衬底为蓝宝石衬底，所述隔热层的制备材料为有机玻璃或改性硅脂。\n\n[0010]本申请提供一种QD-miniLED显示面板制备方法，包括：\n\n[0011]提供第二衬底；\n\n[0012]在所述第二衬底一侧依次形成N型接触层、有源层、P型接触层、以及P极和N极；\n\n[0013]在所述第二衬底另一侧形成量子点色转换层，制备得到LED圆晶；\n\n[0014]对所述LED晶圆进行精密切割，制备得到多个带有量子点色转换层的发光器件；\n\n[0015]提供第一衬底；\n\n[0016]将所述发光器件转移到所述第一衬底上，所述P极和N极与所述第一衬底抵接设置。\n\n[0017]可选的，在本申请的一些实施例中，制备得到LED圆晶的步骤还包括：在第二衬底另一侧涂布一定厚度的透明隔热材料，再进行热固化或紫外光固化处理，制备得到隔热层。\n\n[0018]可选的，在本申请的一些实施例中，制备得到隔热层的步骤还包括：在所述第二衬底另一侧涂布100纳米至2000纳米厚度的所述透明隔热材料。\n\n[0019]可选的，在本申请的一些实施例中，制备得到多个带有量子点色转换层的发光器件的步骤还包括：在所述隔热层远离所述第二衬底的一侧形成红色量子点色转换层或绿色量子点色转换层。\n\n[0020]可选的，在本申请的一些实施例中，形成红色量子点色转换层或绿色量子点色转换层的步骤还包括：所述红色量子点色转换层或所述绿色量子点色转换层的厚度范围为1微米至20微米。\n\n[0021]本申请实施例提供的QD-miniLED显示面板包括第一衬底、以及多个独立位于所述第一衬底上的发光器件，其中，部分所述发光器件还包括量子点色转换层；通过将量子点色转换层设置在发光器件内，只需要在一个基板上设置发光器件，无需两个基板精确对位，缓解了因两块基板之间的间隙较大导致的蓝色背光容易出射到相邻像素的光串扰问题。\n\n附图说明\n\n[0022]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0023]图1是本申请实施例提供的QD-miniLED显示面板的截面示意图；\n\n[0024]图2是本申请实施例提供的发光器件的截面示意图；\n\n[0025]图3A是本申请实施例提供的发光器件制备流程的第一种截面示意图；\n\n[0026]图3B是本申请实施例提供的发光器件制备流程的第二种截面示意图；\n\n[0027]图3C是本申请实施例提供的发光器件制备流程的第三种截面示意图；\n\n[0028]图3D是本申请实施例提供的发光器件制备流程的第四种截面示意图；\n\n[0029]图4A是本申请实施例提供的QD-miniLED显示面板制备流程的第一种截面示意图；\n\n[0030]图4B是本申请实施例提供的QD-miniLED显示面板制备流程的第二种截面示意图；\n\n[0031]图5是本申请实施例提供的QD-miniLED显示面板制备方法的流程图。\n\n[0032]附图标记说明：\n\n[0033]\n\n[0034]\n\n具体实施方式\n\n[0035]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0036]本申请实施例提供一种QD-miniLED显示面板和一种QD-miniLED显示面板制备方法。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0037]如图1所示，本申请实施例提供的QD-miniLED显示面板1包括第一衬底10、以及多个独立位于所述第一衬底10上的发光器件2，所述发光器件2包括位于所述第一衬底10上的P极201和N极202、位于所述P极201和N极202上的P型接触层30、位于所述P型接触层30上的有源层40、位于所述有源层40上的N型接触层50、位于所述N型接触层50上的第二衬底60，其中，部分所述发光器件2还包括位于所述第二衬底60远离所述第一衬底10一侧的量子点色转换层80。\n\n[0038]在本实施例中，QD-miniLED显示面板1包括第一衬底10、以及多个独立位于所述第一衬底10上的发光器件2，所述发光器件2包括位于所述第一衬底10上的P极201和N极202、位于所述P极201和N极202上的P型接触层30、位于所述P型接触层30上的有源层40、位于所述有源层40上的N型接触层50、位于所述N型接触层50上的第二衬底60，其中，部分所述发光器件2还包括位于所述第二衬底60远离所述第一衬底10一侧的量子点色转换层80；通过将量子点色转换层80设置在发光器件2内，只需要在一个基板上设置发光器件2，无需两个基板精确对位，缓解了因两块基板之间的间隙较大导致的蓝色背光容易出射到相邻像素的光串扰问题。\n\n[0039]其中，在相邻发光器件2之间还填充有黑油或白油，以防止发光器件2侧面发光带来的相邻像素间的光串扰问题。\n\n[0040]其中，利用透明封装胶材对设置有发光器件2的所述第一衬底10进行封装处理，阻隔空气中的水氧，在所述第一衬底10上形成封装层90。\n\n[0041]其中，所述QD-miniLED显示面板1还包括外接硬件，所述外接硬件采用覆晶薄膜侧面绑定技术，最后制备得到QD-miniLED显示面板1。\n\n[0042]在本实施例中，通过将量子点色转换层80设置在所述发光器件内，所述蓝色背光的光程较短，缓解了相邻像素间发生光串扰问题。\n\n[0043]在一种实施例中，所述发光器件包括红色发光器件、绿色发光器件、蓝色发光器件，其中，所述红色发光器件、绿色发光器件包括所述量子点色转换层，所述蓝色发光器件未设置所述量子点色转换层包括红色发光器件、绿色发光器件、蓝色发光器件，其中，所述红色发光器件、绿色发光器件包括所述量子点色转换层，所述蓝色发光器件未设置所述量子点色转换层。\n\n[0044]其中，所述红色发光器件、所述绿色发光器件设置有量子点色转换层80。\n\n[0045]其中，所述蓝色发光器件3未设置有量子点色转换层80。\n\n[0046]在一种实施例中，如图2所示，所述红色发光器件、所述绿色发光器件还包括设置在所述第二衬底60与所述量子点色转换层80之间的隔热层70。\n\n[0047]其中，所述隔热层70设置在所述第二衬底60上，所述量子点色转换层80设置在所述隔热层70上。\n\n[0048]其中，所述P极201和N极202与所述第一衬底10抵接，所述P极201和N极202产生的热量直接通过第一衬底10进行散热，同时在所述量子点色转换层80靠近所述P极201和N极202的一侧设置隔热层70，防止所述P极201和N极202产生的热量传导至量子点色转换层80，导致量子点色转换层80不稳定，影响发光效果。\n\n[0049]在一种实施例中，所述量子点色转换层80包括红色量子点色转换层和绿色量子点色转换层，所述红色发光器件包括红色量子点色转换层，所述绿色发光器件包括绿色量子点色转换层。\n\n[0050]本身提供了一种QD-miniLED显示面板1及其制作方法。所述QD-miniLED显示面板1将量子点色转换层80和发光器件2集成在同一衬底上。如图1、图2所示的器件结构，利用“倒装”式发光器件2，所述发光器件2通过P极201和N极202连接第一衬底10，而所述量子点色转换层80位于所述发光器件2的第二衬底60上。相对正装式结构的miniLED而言，这种“倒装”结构的发光光线向上方出射，而P极201和N极202在下方与基板相连，散热距离较短，便于散热。\n\n[0051]其中，也可以采用如图2所示结构，即在图1中单个发光器件2结构的基础上，再在第二衬底60与量子点色转换层80之间加入隔热层70，以阻止发光器件2中P极201和N极202的高温传导到量子点色转换层80引起量子点色转换层80的不稳定，这种结构更适合发光器件2产热量较大的情况，例如高亮度或高分辨率的QD-miniLED显示面板1。\n\n[0052]在一种实施例中，所述第二衬底60为蓝宝石衬底，所述隔热层70的制备材料为有机玻璃或改性硅脂。\n\n[0053]如图1所示，本申请提供的发光器件2包括：未设置有量子点色转换层80的蓝色QD发光器件2、以及设置有量子点色转换层80的红和绿色发光器件2。\n\n[0054]其中，如图2所示，为设置有量子点色转换层80的红和绿色发光器件2。\n\n[0055]其中，所述红和绿色发光器件2还包括隔热层70，所述隔热层70设置在所述第二衬底60与所述量子点色转换层80之间。\n\n[0056]如图3A至图3D所示，本申请提供的发光器件2的制备方法包括：\n\n[0057]S1:提供第二衬底60；\n\n[0058]S2:在所述第二衬底60一侧依次形成N型接触层50、有源层40、P型接触层30、以及P极201和N极202；\n\n[0059]S3:在所述第二衬底60另一侧形成量子点色转换层80，制备得到LED圆晶4；\n\n[0060]S4:对所述LED晶圆进行精密切割，制备得到多个带有量子点色转换层80的发光器件2。\n\n[0061]在一种实施例中，在所述第二衬底60上形成量子点色转换层80之前，可先在第二衬底60上形成一层隔热层70，然后再所述隔热层70上再形成量子点色转换层80。\n\n[0062]在一种实施例中，形成隔热层70的步骤包括：可采用“晶圆涂胶”工艺在第二衬底60上涂布一定厚度透明隔热材料，再进行热固化或紫外光固化处理，得到隔热层70。\n\n[0063]其中，所述隔热层70的制备材料可以为亚克力材料或改性硅脂材料。\n\n[0064]其中，所述隔热层70的厚度范围为100纳米至2000纳米。\n\n[0065]在一种实施例中，制备得到红色发光器件2的步骤包括：在所述隔热层70上方继续涂布红色量子点胶水，经过热固化或紫外光固化后得到带有红色量子点色转换层的红色LED晶圆。\n\n[0066]其中，涂布的红色量子点胶水的厚度范围为1微米至20微米。\n\n[0067]在一种实施例中，制备得到绿色发光器件2的步骤包括：在所述隔热层70上方继续涂布绿色量子点胶水，经过热固化或紫外光固化后得到带有绿色量子点色转换层的绿色LED晶圆。\n\n[0068]其中，涂布的绿色量子点胶水的厚度范围为1微米至20微米。\n\n[0069]在一种实施例中，如图3C至3D，将LED圆晶4通过精密切割得到多个带有量子点层的发光器件2。\n\n[0070]其中，蓝色LED圆晶4通过精密切割可得到多个蓝色发光器件3。\n\n[0071]其中，红色LED圆晶4通过精密切割可得到多个红色发光器件2。\n\n[0072]其中，绿色LED圆晶4通过精密切割可得到多个绿色发光器件2。\n\n[0073]如图4A至图4B、图5所示，本申请提供的QD-miniLED显示面板1制备方法包括：\n\n[0074]S1:提供第二衬底60；\n\n[0075]S2:在所述第二衬底60一侧依次形成N型接触层50、有源层40、P型接触层30、以及P极201和N极202；\n\n[0076]S3:在所述第二衬底60另一侧形成量子点色转换层80，制备得到LED圆晶4；\n\n[0077]S4:对所述LED晶圆进行精密切割，制备得到多个带有量子点色转换层80的发光器件2；\n\n[0078]S5:提供第一衬底10；\n\n[0079]S6:将所述发光器件2转移到所述第一衬底10上，所述P极201和N极202与所述第一衬底10抵接设置。\n\n[0080]其中，S1至S4步骤为制备单个发光器件2的步骤，部分发光器件2包括量子点色转换层80。\n\n[0081]在一种实施例中，制备得到LED圆晶4的步骤还包括：在第二衬底60另一侧涂布一定厚度的透明隔热材料，再进行热固化或紫外光固化处理，制备得到隔热层70。\n\n[0082]在一种实施例中，制备得到隔热层70的步骤还包括：在所述第二衬底60另一侧涂布100纳米至2000纳米厚度的所述透明隔热材料。\n\n[0083]在一种实施例中，制备得到多个带有量子点色转换层80的发光器件2的步骤还包括：在所述隔热层70远离所述第二衬底60的一侧形成红色量子点色转换层或绿色量子点色转换层。\n\n[0084]在一种实施例中，形成红色量子点色转换层或绿色量子点色转换层的步骤还包括：所述红色量子点色转换层或所述绿色量子点色转换层的厚度范围为1微米至20微米。\n\n[0085]本实施例提供的QD-miniLED显示面板包括第一衬底、以及多个独立位于所述第一衬底上的发光器件，所述发光器件包括位于所述第一衬底上的P极和N极、位于所述P极和N极上的P型接触层、位于所述P型接触层上的有源层、位于所述有源层上的N型接触层、位于所述N型接触层上的第二衬底，其中，部分所述发光器件还包括位于所述第二衬底远离所述第一衬底一侧的量子点色转换层；通过将量子点色转换层设置在发光器件内，只需要在一个基板上设置发光器件，无需两个基板精确对位，缓解了因两块基板之间的间隙较大导致的蓝色背光容易出射到相邻像素的光串扰问题。\n\n[0086]以上对本申请实施例所提供的一种QD-miniLED显示面板和一种QD-miniLED显示面板制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及miniLED显示面板技术领域，具体涉及一种QD-miniLED显示面板和一种QD-miniLED显示面板制备方法。\n\n背景技术\n\n[0002]目前的发光器件结构包括两个基板，其中量子点色转换层位于彩膜基板，发光器件位于阵列基板，所述量子点色转换层需与发光器件对位设置，因此，所述彩膜基板与所述阵列基板需要精密对位贴合形成完整器件，两块基板之间的间隙往往较大，这样蓝色背光会经过较长光程而容易出射到相邻像素，产生光串扰问题。\n\n[0003]因此，现有发光器件结构存在蓝色背光出射到相邻像素发生光串扰的技术问题。\n\n发明内容\n\n[0004]本申请实施例提供一种QD-miniLED显示面板和一种QD-miniLED显示面板制备方法，可以缓解现有miniLED显示面板存在蓝色背光出射到相邻像素发生光串扰的技术问题。\n\n[0005]本申请提供一种QD-miniLED显示面板，包括第一衬底、以及多个独立位于所述第一衬底上的发光器件，所述发光器件包括位于所述第一衬底上的P极和N极、位于所述P极和N极上的P型接触层、位于所述P型接触层上的有源层、位于所述有源层上的N型接触层、位于所述N型接触层上的第二衬底，其中，部分所述发光器件还包括位于所述第二衬底远离所述第一衬底一侧的量子点色转换层。\n\n[0006]可选的，在本申请的一些实施例中，所述红色发光器件、所述绿色发光器件还包括设置在所述第二衬底与所述量子点色转换层之间的隔热层。\n\n[0007]可选的，在本申请的一些实施例中，所述发光器件包括红色发光器件、绿色发光器件、蓝色发光器件，其中，所述红色发光器件、绿色发光器件包括所述量子点色转换层，所述蓝色发光器件未设置所述量子点色转换层。\n\n[0008]可选的，在本申请的一些实施例中，所述量子点色转换层包括红色量子点色转换层和绿色量子点色转换层，所述红色发光器件包括红色量子点色转换层，所述绿色发光器件包括绿色量子点色转换层。\n\n[0009]可选的，在本申请的一些实施例中，所述第二衬底为蓝宝石衬底，所述隔热层的制备材料为有机玻璃或改性硅脂。\n\n[0010]本申请提供一种QD-miniLED显示面板制备方法，包括：\n\n[0011]提供第二衬底；\n\n[0012]在所述第二衬底一侧依次形成N型接触层、有源层、P型接触层、以及P极和N极；\n\n[0013]在所述第二衬底另一侧形成量子点色转换层，制备得到LED圆晶；\n\n[0014]对所述LED晶圆进行精密切割，制备得到多个带有量子点色转换层的发光器件；\n\n[0015]提供第一衬底；\n\n[0016]将所述发光器件转移到所述第一衬底上，所述P极和N极与所述第一衬底抵接设置。\n\n[0017]可选的，在本申请的一些实施例中，制备得到LED圆晶的步骤还包括：在第二衬底另一侧涂布一定厚度的透明隔热材料，再进行热固化或紫外光固化处理，制备得到隔热层。\n\n[0018]可选的，在本申请的一些实施例中，制备得到隔热层的步骤还包括：在所述第二衬底另一侧涂布100纳米至2000纳米厚度的所述透明隔热材料。\n\n[0019]可选的，在本申请的一些实施例中，制备得到多个带有量子点色转换层的发光器件的步骤还包括：在所述隔热层远离所述第二衬底的一侧形成红色量子点色转换层或绿色量子点色转换层。\n\n[0020]可选的，在本申请的一些实施例中，形成红色量子点色转换层或绿色量子点色转换层的步骤还包括：所述红色量子点色转换层或所述绿色量子点色转换层的厚度范围为1微米至20微米。\n\n[0021]本申请实施例提供的QD-miniLED显示面板包括第一衬底、以及多个独立位于所述第一衬底上的发光器件，其中，部分所述发光器件还包括量子点色转换层；通过将量子点色转换层设置在发光器件内，只需要在一个基板上设置发光器件，无需两个基板精确对位，缓解了因两块基板之间的间隙较大导致的蓝色背光容易出射到相邻像素的光串扰问题。\n\n附图说明\n\n[0022]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0023]图1是本申请实施例提供的QD-miniLED显示面板的截面示意图；\n\n[0024]图2是本申请实施例提供的发光器件的截面示意图；\n\n[0025]图3A是本申请实施例提供的发光器件制备流程的第一种截面示意图；\n\n[0026]图3B是本申请实施例提供的发光器件制备流程的第二种截面示意图；\n\n[0027]图3C是本申请实施例提供的发光器件制备流程的第三种截面示意图；\n\n[0028]图3D是本申请实施例提供的发光器件制备流程的第四种截面示意图；\n\n[0029]图4A是本申请实施例提供的QD-miniLED显示面板制备流程的第一种截面示意图；\n\n[0030]图4B是本申请实施例提供的QD-miniLED显示面板制备流程的第二种截面示意图；\n\n[0031]图5是本申请实施例提供的QD-miniLED显示面板制备方法的流程图。\n\n[0032]附图标记说明：\n\n[0033]\n\n[0034]\n\n具体实施方式\n\n[0035]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0036]本申请实施例提供一种QD-miniLED显示面板和一种QD-miniLED显示面板制备方法。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0037]如图1所示，本申请实施例提供的QD-miniLED显示面板1包括第一衬底10、以及多个独立位于所述第一衬底10上的发光器件2，所述发光器件2包括位于所述第一衬底10上的P极201和N极202、位于所述P极201和N极202上的P型接触层30、位于所述P型接触层30上的有源层40、位于所述有源层40上的N型接触层50、位于所述N型接触层50上的第二衬底60，其中，部分所述发光器件2还包括位于所述第二衬底60远离所述第一衬底10一侧的量子点色转换层80。\n\n[0038]在本实施例中，QD-miniLED显示面板1包括第一衬底10、以及多个独立位于所述第一衬底10上的发光器件2，所述发光器件2包括位于所述第一衬底10上的P极201和N极202、位于所述P极201和N极202上的P型接触层30、位于所述P型接触层30上的有源层40、位于所述有源层40上的N型接触层50、位于所述N型接触层50上的第二衬底60，其中，部分所述发光器件2还包括位于所述第二衬底60远离所述第一衬底10一侧的量子点色转换层80；通过将量子点色转换层80设置在发光器件2内，只需要在一个基板上设置发光器件2，无需两个基板精确对位，缓解了因两块基板之间的间隙较大导致的蓝色背光容易出射到相邻像素的光串扰问题。\n\n[0039]其中，在相邻发光器件2之间还填充有黑油或白油，以防止发光器件2侧面发光带来的相邻像素间的光串扰问题。\n\n[0040]其中，利用透明封装胶材对设置有发光器件2的所述第一衬底10进行封装处理，阻隔空气中的水氧，在所述第一衬底10上形成封装层90。\n\n[0041]其中，所述QD-miniLED显示面板1还包括外接硬件，所述外接硬件采用覆晶薄膜侧面绑定技术，最后制备得到QD-miniLED显示面板1。\n\n[0042]在本实施例中，通过将量子点色转换层80设置在所述发光器件内，所述蓝色背光的光程较短，缓解了相邻像素间发生光串扰问题。\n\n[0043]在一种实施例中，所述发光器件包括红色发光器件、绿色发光器件、蓝色发光器件，其中，所述红色发光器件、绿色发光器件包括所述量子点色转换层，所述蓝色发光器件未设置所述量子点色转换层包括红色发光器件、绿色发光器件、蓝色发光器件，其中，所述红色发光器件、绿色发光器件包括所述量子点色转换层，所述蓝色发光器件未设置所述量子点色转换层。\n\n[0044]其中，所述红色发光器件、所述绿色发光器件设置有量子点色转换层80。\n\n[0045]其中，所述蓝色发光器件3未设置有量子点色转换层80。\n\n[0046]在一种实施例中，如图2所示，所述红色发光器件、所述绿色发光器件还包括设置在所述第二衬底60与所述量子点色转换层80之间的隔热层70。\n\n[0047]其中，所述隔热层70设置在所述第二衬底60上，所述量子点色转换层80设置在所述隔热层70上。\n\n[0048]其中，所述P极201和N极202与所述第一衬底10抵接，所述P极201和N极202产生的热量直接通过第一衬底10进行散热，同时在所述量子点色转换层80靠近所述P极201和N极202的一侧设置隔热层70，防止所述P极201和N极202产生的热量传导至量子点色转换层80，导致量子点色转换层80不稳定，影响发光效果。\n\n[0049]在一种实施例中，所述量子点色转换层80包括红色量子点色转换层和绿色量子点色转换层，所述红色发光器件包括红色量子点色转换层，所述绿色发光器件包括绿色量子点色转换层。\n\n[0050]本身提供了一种QD-miniLED显示面板1及其制作方法。所述QD-miniLED显示面板1将量子点色转换层80和发光器件2集成在同一衬底上。如图1、图2所示的器件结构，利用“倒装”式发光器件2，所述发光器件2通过P极201和N极202连接第一衬底10，而所述量子点色转换层80位于所述发光器件2的第二衬底60上。相对正装式结构的miniLED而言，这种“倒装”结构的发光光线向上方出射，而P极201和N极202在下方与基板相连，散热距离较短，便于散热。\n\n[0051]其中，也可以采用如图2所示结构，即在图1中单个发光器件2结构的基础上，再在第二衬底60与量子点色转换层80之间加入隔热层70，以阻止发光器件2中P极201和N极202的高温传导到量子点色转换层80引起量子点色转换层80的不稳定，这种结构更适合发光器件2产热量较大的情况，例如高亮度或高分辨率的QD-miniLED显示面板1。\n\n[0052]在一种实施例中，所述第二衬底60为蓝宝石衬底，所述隔热层70的制备材料为有机玻璃或改性硅脂。\n\n[0053]如图1所示，本申请提供的发光器件2包括：未设置有量子点色转换层80的蓝色QD发光器件2、以及设置有量子点色转换层80的红和绿色发光器件2。\n\n[0054]其中，如图2所示，为设置有量子点色转换层80的红和绿色发光器件2。\n\n[0055]其中，所述红和绿色发光器件2还包括隔热层70，所述隔热层70设置在所述第二衬底60与所述量子点色转换层80之间。\n\n[0056]如图3A至图3D所示，本申请提供的发光器件2的制备方法包括：\n\n[0057]S1:提供第二衬底60；\n\n[0058]S2:在所述第二衬底60一侧依次形成N型接触层50、有源层40、P型接触层30、以及P极201和N极202；\n\n[0059]S3:在所述第二衬底60另一侧形成量子点色转换层80，制备得到LED圆晶4；\n\n[0060]S4:对所述LED晶圆进行精密切割，制备得到多个带有量子点色转换层80的发光器件2。\n\n[0061]在一种实施例中，在所述第二衬底60上形成量子点色转换层80之前，可先在第二衬底60上形成一层隔热层70，然后再所述隔热层70上再形成量子点色转换层80。\n\n[0062]在一种实施例中，形成隔热层70的步骤包括：可采用“晶圆涂胶”工艺在第二衬底60上涂布一定厚度透明隔热材料，再进行热固化或紫外光固化处理，得到隔热层70。\n\n[0063]其中，所述隔热层70的制备材料可以为亚克力材料或改性硅脂材料。\n\n[0064]其中，所述隔热层70的厚度范围为100纳米至2000纳米。\n\n[0065]在一种实施例中，制备得到红色发光器件2的步骤包括：在所述隔热层70上方继续涂布红色量子点胶水，经过热固化或紫外光固化后得到带有红色量子点色转换层的红色LED晶圆。\n\n[0066]其中，涂布的红色量子点胶水的厚度范围为1微米至20微米。\n\n[0067]在一种实施例中，制备得到绿色发光器件2的步骤包括：在所述隔热层70上方继续涂布绿色量子点胶水，经过热固化或紫外光固化后得到带有绿色量子点色转换层的绿色LED晶圆。\n\n[0068]其中，涂布的绿色量子点胶水的厚度范围为1微米至20微米。\n\n[0069]在一种实施例中，如图3C至3D，将LED圆晶4通过精密切割得到多个带有量子点层的发光器件2。\n\n[0070]其中，蓝色LED圆晶4通过精密切割可得到多个蓝色发光器件3。\n\n[0071]其中，红色LED圆晶4通过精密切割可得到多个红色发光器件2。\n\n[0072]其中，绿色LED圆晶4通过精密切割可得到多个绿色发光器件2。\n\n[0073]如图4A至图4B、图5所示，本申请提供的QD-miniLED显示面板1制备方法包括：\n\n[0074]S1:提供第二衬底60；\n\n[0075]S2:在所述第二衬底60一侧依次形成N型接触层50、有源层40、P型接触层30、以及P极201和N极202；\n\n[0076]S3:在所述第二衬底60另一侧形成量子点色转换层80，制备得到LED圆晶4；\n\n[0077]S4:对所述LED晶圆进行精密切割，制备得到多个带有量子点色转换层80的发光器件2；\n\n[0078]S5:提供第一衬底10；\n\n[0079]S6:将所述发光器件2转移到所述第一衬底10上，所述P极201和N极202与所述第一衬底10抵接设置。\n\n[0080]其中，S1至S4步骤为制备单个发光器件2的步骤，部分发光器件2包括量子点色转换层80。\n\n[0081]在一种实施例中，制备得到LED圆晶4的步骤还包括：在第二衬底60另一侧涂布一定厚度的透明隔热材料，再进行热固化或紫外光固化处理，制备得到隔热层70。\n\n[0082]在一种实施例中，制备得到隔热层70的步骤还包括：在所述第二衬底60另一侧涂布100纳米至2000纳米厚度的所述透明隔热材料。\n\n[0083]在一种实施例中，制备得到多个带有量子点色转换层80的发光器件2的步骤还包括：在所述隔热层70远离所述第二衬底60的一侧形成红色量子点色转换层或绿色量子点色转换层。\n\n[0084]在一种实施例中，形成红色量子点色转换层或绿色量子点色转换层的步骤还包括：所述红色量子点色转换层或所述绿色量子点色转换层的厚度范围为1微米至20微米。\n\n[0085]本实施例提供的QD-miniLED显示面板包括第一衬底、以及多个独立位于所述第一衬底上的发光器件，所述发光器件包括位于所述第一衬底上的P极和N极、位于所述P极和N极上的P型接触层、位于所述P型接触层上的有源层、位于所述有源层上的N型接触层、位于所述N型接触层上的第二衬底，其中，部分所述发光器件还包括位于所述第二衬底远离所述第一衬底一侧的量子点色转换层；通过将量子点色转换层设置在发光器件内，只需要在一个基板上设置发光器件，无需两个基板精确对位，缓解了因两块基板之间的间隙较大导致的蓝色背光容易出射到相邻像素的光串扰问题。\n\n[0086]以上对本申请实施例所提供的一种QD-miniLED显示面板和一种QD-miniLED显示面板制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10927, 23981, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种背光驱动电路、驱动方法及背光模组。\n\n背景技术\n\n[0002]随着高阶TV市场对画质的要求越来越高，提升显示画质成为高阶TV的一个新需求。目前分辨率为7680*4320(8K)的有机发光器件(Organic Light-Emitting Diode，OLED)，即8K OLED受限于补偿电路、铟镓锌氧化物(indium gallium zinc oxide，IGZO)背板技术及驱动设计等问题，尚需开发。而微型发光二极管(Light-Emitting Diode，LED)，即Mini LED作为一个全新的显示技术，在亮度、功耗上较OLED和双层叠加面板(dual cell)有优势。\n\n[0003]Mini LED背光相比传统背光的区别在于：Mini LED可以通过区域调光(localdimming)实现百万级的对比度。传统背光开启时所有的灯都会开启，在面板上不显示的区域也会受到背光照射，导致暗态不够黑，对比度低；而Mini LED可以与面板的显示画面匹配实现区域开启背光，面板上不显示的区域背光不开启，实现完全的黑态，从而达到百万级的对比度。其中采用有源矩阵驱动技术(Active matrix，AM)的Mini LED，即AM Mini LED在提高显示画质的同时可以大幅降低驱动成本，因此目前正有多家企业在开发。\n\n[0004]目前Mini LED的驱动架构多以2个具有开关功能的薄膜晶体管(Thin FilmTransistor，TFT)和1个储存电荷的电容(Capacitance，C)为主，但LED为电流驱动器件，AMMini-LED背板信号为电压控制，因此对TFT器件的稳定性要求非常高。特别是驱动TFT的稳定性及均一性会直接影响到LED的发光亮度。但目前的无定形硅(a-Si)、IGZO TFT器件均难以满足这个需求，而低温多晶硅(Low Temperature Ploy silicon,LTPS)无法应用在大尺寸上，因此需要设计新的驱动电路来满足AM Mini-LED的驱动需求。\n\n发明内容\n\n[0005]本申请提供一种减小传统结构中驱动TFT的阈值电压的变化对发光器件亮度的影响，提升发光器件的发光均一性及发光器件的信赖性的一种背光驱动电路及方法。\n\n[0006]一方面，本申请提供一种背光驱动电路，包括发光器件和驱动模块，所述驱动模块包括开关器件和驱动器件，所述开关器件与所述发光器件连接，所述开关器件用于控制所述发光器件的通断，所述驱动器件与所述开关器件连接；\n\n[0007]所述开关器件包括开关MOS管，所述驱动器件用于控制所述开关MOS管的工作电压满足预先设定的条件，在所述预先设定的条件下，所述开关MOS管工作在开关MOS管的线性区，所述开关MOS管的工作电压包括所述开关MOS管的阈值电压、栅极电压、栅-源极节点电压和源-漏极节点电压。\n\n[0008]在本申请一种可能的实现方式中，所述驱动器件包括驱动薄膜晶体管、驱动MOS管或驱动传输门。\n\n[0009]在本申请一种可能的实现方式中，所述预先设定的条件包括：\n\n[0010]所述开关MOS管的栅-源极节点电压大于所述开关MOS管的阈值电压，且所述开关MOS管的源-漏极节点电压小于过驱动电压，所述过驱动电压为所述开关MOS管的栅-源极节点电压与所述开关MOS管的阈值电压的电压差值。\n\n[0011]在本申请一种可能的实现方式中，所述预先设定的条件包括：\n\n[0012]所述开关MOS管的阈值电压满足以下条件：所述开关MOS管的阈值电压浮动1V时，所述开关MOS管的漏极处的电阻变化值小于1％，所述电阻变化值为(R1-R2)/R1，其中，R1为所述开关MOS管在开关MOS管的阈值电压浮动前的电阻，R2为所述开关MOS管在开关MOS管的阈值电压浮动后的电阻。\n\n[0013]在本申请一种可能的实现方式中，所述驱动模块包括第一开关器件、第一驱动器件和第一储能电容，所述第一开关器件包括第一MOS管，所述第一驱动器件包括第一薄膜晶体管；\n\n[0014]所述第一驱动器件用于控制所述第一MOS管的工作电压满足预先设定的条件，在所述预先设定的条件下，所述第一MOS管工作在第一MOS管的线性区，所述第一MOS管的工作电压包括所述第一MOS管的阈值电压、栅极电压、栅-源极节点电压和源-漏极节点电压。\n\n[0015]在本申请一种可能的实现方式中，所述驱动模块包括第二开关器件、第二驱动器件、第三驱动器件和第二储能电容，所述第二开关器件包括第二MOS管，所述第二驱动器件包括第二薄膜晶体管，第三驱动器件包括第三薄膜晶体管；\n\n[0016]所述第二驱动器件和第三驱动器件用于控制所述第二MOS管的工作电压满足预先设定的条件，在所述预先设定的条件下，所述第二MOS管工作在第二MOS管的线性区，所述第二MOS管的工作电压包括所述第二MOS管的阈值电压、栅极电压、栅-源极节点电压和源-漏极节点电压。\n\n[0017]在本申请一种可能的实现方式中，所述驱动模块包括第三开关器件、第四驱动器件、第五驱动器件、第六驱动器件、第七驱动器件、第八驱动器件和第三储能电容，所述第三开关器件包括第五MOS管，所述第四驱动器件包括第四薄膜晶体管，第五驱动器件包括第五薄膜晶体管，第六驱动器件包括第六薄膜晶体管，第七驱动器件包括第七薄膜晶体管，第八驱动器件包括第八薄膜晶体管；\n\n[0018]所述第四驱动器件、所述第五驱动器件、所述第六驱动器件、所述第七驱动器件、所述第八驱动器件用于控制所述第五MOS管的工作电压满足预先设定的条件，在所述预先设定的条件下，所述第五MOS管工作在第五MOS管的线性区，所述第五MOS管的工作电压包括所述第五MOS管的阈值电压、栅极电压、栅-源极节点电压和源-漏极节点电压。\n\n[0019]在本申请一种可能的实现方式中，所述发光器件包括Mini-LED、Micro-LED或OLED。\n\n[0020]另一方面，本申请提供了一种背光驱动方法，应用于背光驱动电路中，所述背光驱动电路包括：包括发光器件和驱动模块，所述驱动模块包括开关器件和驱动器件，所述开关器件与所述发光器件连接，所述开关器件用于控制所述发光器件的通断，所述驱动器件与所述开关器件连接，所述驱动器件用于控制所述开关器件的通断；\n\n[0021]所述方法包括：\n\n[0022]设置开关MOS管作为所述开关器件，通过所述驱动器件控制所述开关MOS管的工作电压满足预先设定的条件，在所述预先设定的条件下，所述开关MOS管工作在开关MOS管的线性区，所述开关MOS管的工作电压包括所述开关MOS管的阈值电压、栅极电压、栅-源极节点电压和源-漏极节点电压。\n\n[0023]在本申请一种可能的实现方式中，所述通过所述开关器件控制所述开关MOS管的工作电压满足预先设定的条件，包括：\n\n[0024]控制所述开关MOS管的栅-源极节点电压大于所述开关MOS管的阈值电压，且所述开关MOS管的源-漏极节点电压小于过驱动电压，所述过驱动电压为所述开关MOS管的栅-源极节点电压与所述开关MOS管的阈值电压的电压差值。\n\n[0025]在本申请一种可能的实现方式中，所述通过所述开关器件控制所述开关MOS管的工作电压满足预先设定的条件，包括：\n\n[0026]控制所述开关MOS管的阈值电压满足以下条件：所述开关MOS管的阈值电压浮动1V时，所述开关MOS管的漏极处的电阻变化值小于1％，所述电阻变化值为(R1-R2)/R1，其中，R1为所述开关MOS管在开关MOS管的阈值电压浮动前的电阻，R2为所述开关MOS管在开关MOS管的阈值电压浮动后的电阻。\n\n[0027]另一方面，本申请提供了一种AM Mini-LED、Micro LED的背光模组，其上搭载有驱动电路，所述驱动电路采用的是所述的背光驱动电路。\n\n[0028]本申请中将开关MOS管作为驱动模块中的开关器件，由于开关MOS管的沟道材料是单晶硅，相对于传统作为开关器件的薄膜晶体管，开关MOS管的稳定性较好，并且本申请通过驱动器件调整开关MOS管的工作电压，从而控制开关MOS管在工作于开关MOS管的线性区内，当开关MOS管工作于线性区内时，开关MOS管近似于一个阻值一定的电阻，开关MOS管的漏极电流-漏极电压的曲线重合较好，开关MOS管输入不同的栅极电压所引起输出电流变化影响较小，从而减小开关MOS管输出电流的变化带来的发光器件的亮度变化，提升发光器件的发光均一性及发光器件的信赖性。\n\n附图说明\n\n[0029]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0030]图1是本申请一实施例提供的背光驱动电路的一个实施例结构示意图；\n\n[0031]图2是本申请另一实施例提供的背光驱动电路的一个实施例结构示意图；\n\n[0032]图3是本申请另一实施例提供的背光驱动电路的一个实施例结构示意图；\n\n[0033]图4是本申请另一实施例提供的背光驱动电路的一个实施例结构示意图；\n\n[0034]图5是本申请另一实施例中提供的背光驱动方法的流程示意图。\n\n具体实施方式\n\n[0035]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0036]在本发明的描述中，需要理解的是，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0037]在本申请中，“示例性”一词用来表示“用作例子、例证或说明”。本申请中被描述为“示例性”的任何实施例不一定被解释为比其它实施例更优选或更具优势。为了使本领域任何技术人员能够实现和使用本发明，给出了以下描述。在以下描述中，为了解释的目的而列出了细节。应当明白的是，本领域普通技术人员可以认识到，在不使用这些特定细节的情况下也可以实现本发明。在其它实例中，不会对公知的结构和过程进行详细阐述，以避免不必要的细节使本发明的描述变得晦涩。因此，本发明并非旨在限于所示的实施例，而是与符合本申请所公开的原理和特征的最广范围相一致。\n\n[0038]本申请实施例提供一种背光驱动电路、驱动方法及背光模组，以下分别进行详细说明。\n\n[0039]本申请提供一种背光驱动电路，如图1所示，包括发光器件101和驱动模块102，驱动模块102包括开关器件103和驱动器件104，开关器件103与发光器件101连接，开关器件103用于控制发光器件101的通断，驱动器件104与开关器件103连接，驱动器件104用于控制开关器件103的通断；\n\n[0040]开关器件103包括开关MOS管，驱动器件104用于控制开关MOS管的工作电压满足预先设定的条件，在预先设定的条件下，开关MOS管工作在开关MOS管的线性区，开关MOS管的工作电压包括开关MOS管的阈值电压Vth、栅极电压Vg、栅-源极节点电压Vgs和源-漏极节点电压Vds。\n\n[0041]本申请中将开关MOS管作为驱动模块102中的开关器件103，由于开关MOS管的沟道材料是单晶硅，且是电压型控制器件，相对于传统作为开关器件103的薄膜晶体管，开关MOS管更能够适应于背光的驱动电路，开关MOS管的稳定性更好，且并且本申请通过驱动器件104调整开关MOS管的工作电压，从而控制开关MOS管在工作于开关MOS管的线性区内，当开关MOS管工作于线性区内时，开关MOS管近似于一个阻值一定的电阻，开关MOS管的漏极电流-漏极电压的曲线重合较好，开关MOS管输入不同的栅极电压所引起输出电流变化影响较小，从而减小开关MOS管输出电流的变化带来的发光器件101的亮度变化，提升发光器件101的发光均一性及发光器件101的信赖性。\n\n[0042]本申请实施例中，驱动器件104可以包括驱动薄膜晶体管、驱动MOS管或驱动传输门。驱动薄膜晶体管、驱动MOS管和驱动传输门均为可控开关器件103，均可作为用于控制开关器件103的通断，由于驱动薄膜晶体管、驱动MOS管和驱动传输门的源极和漏极是对称的，采用驱动薄膜晶体管、驱动MOS管和驱动传输门中的任意一项作为驱动器件104时，驱动器件104的源极和漏极是可以互换的，本实施例中采用驱动MOS管时，可以包括P型驱动MOS管和/或N型驱动MOS管两种，其中，P型晶体管为在栅极为低电平时导通，在栅极为高电平时截止，N型晶体管为在栅极为高电平时导通，在栅极为低电平时截止，开关MOS管同理。\n\n[0043]本申请实施例中，发光器件101可以包括Mini-LED、Micro-LED或OLED。\n\n[0044]在另一个具体实施例中，预先设定的条件包括：开关MOS管的栅-源极节点电压Vgs大于开关MOS管的阈值电压Vth，且开关MOS管的源-漏极节点电压Vds小于过驱动电压Vod，过驱动电压Vod为开关MOS管的栅-源极节点电压Vgs与开关MOS管的阈值电压Vth的电压差值。\n\n[0045]下面根据开关MOS管的电特性(I/V特性)进行具体分析。\n\n[0046]由于开关MOS管的输出电流Id由开关MOS管的μCox、开关MOS管的W和L、开关MOS管的栅-源极节点电压Vgs和源-漏极节点电压Vds决定，开关MOS管导通时，开关MOS管的输出电流Id可以由下式表示：\n\n[0047]Id＝K×((Vgs–Vth)×Vds–(Vds2/2))；\n\n[0048]其中，K为开关MOS管的导电因子，K＝1/2Cox(μW/L)，Cox为栅氧电容，μ为开关MOS管的载流子迁移率，W和L分别为开关MOS管的沟道的宽度和长度，W/L指的是开关MOS管的沟道宽长比。\n\n[0049]当开关MOS管的栅极处于悬空，或接入的电压较小，未达到开关MOS管的阈值电压Vth时，即开关MOS管的Vgs≤Vth时，此刻开关MOS管的输出电流Id＝0，开关MOS管处于截止区。\n\n[0050]当开关MOS管的栅极接入的电压足够大，即开关MOS管的栅极电压Vg足够大，再根据开关MOS管的电特性选择合适的电压电源作为驱动电路中的驱动电源，以得到合适的源-漏极节点电压Vds，最终控制开关MOS管的栅-源极节点电压Vgs和源-漏极节点电压Vds满足Vgs>Vth，Vds≤Vgs–Vth时，此刻开关MOS管的输出电流Id则即为：Id＝K×((Vgs–Vth)×Vds–(Vds2/2))，即满足开关MOS管处于线性区。\n\n[0051]当开关MOS管工作于线性区时，开关MOS管呈阻态，开关MOS管的输出电流几乎没有变化，开关MOS管的输出电流Id与栅-源极节点电压Vgs存在正相关关系。由于发光器件101是电流驱动器件104，其亮度与开关MOS管的输出电流呈正比，当开关MOS管满足导通条件且呈阻态时，驱动器件104的阈值电压Vth的变化对开关MOS管的输出电流影响均较小，进而能保证发光器件101的均一性和信赖性。\n\n[0052]在另一个具体实施例中，预先设定的条件包括：开关MOS管的阈值电压Vth满足以下条件：开关MOS管的阈值电压Vth浮动1V时，开关MOS管的漏极处的电阻变化值小于1％，电阻变化值为(R1-R2)/R1，其中，R1为开关MOS管在开关MOS管的阈值电压Vth浮动前的电阻，R2为开关MOS管在开关MOS管的阈值电压Vth浮动后的电阻。\n\n[0053]继续根据根据开关MOS管的电特性(I/V特性)进行具体分析。\n\n[0054]开关MOS管的输出电流Id可以由下式表示：\n\n[0055]Id＝K×((Vgs–Vth)×Vds–(Vds2/2))\n\n[0056]当开关MOS管的栅极接入的电压足够大，即开关MOS管的栅极电压Vg足够大，再根据开关MOS管的电特性选择合适的电压电源作为驱动电路中的驱动电源，以得到合适的源-漏极节点电压Vds，最终控制开关MOS管的阈值电压Vth、开关MOS管的栅-源极节点电压Vgs和源-漏极节点电压Vds满足Vds[0057]当开关MOS管的源-漏极节点电压Vds较小时，开关MOS管的输出电流Id是源-漏极节点电压Vds的线性函数，此刻开关MOS管可以等效为一个电阻，开关MOS管的阻值可以为：\n\n[0058]Ron＝Vds/Id＝1/(2K×(Vgs–Vth))；\n\n[0059]具体实施过程中，由于开关MOS管的阈值电压Vth会受到温度影响出现波动，当开关MOS管的阈值电压Vth出现浮动1V时，设开关MOS管的阈值电压Vth出现浮动前的阈值电压为Vth1，则R1＝1/(2K×(Vgs–Vth1))，开关MOS管的阈值电压Vth出现浮动后的阈值电压为Vth2，则R2＝1/(2K×(Vgs–Vth2))；\n\n[0060]设电阻变化值为Xr，则\n\n[0061]Xr＝(R1-R2)/R1\n\n[0062]＝(1/(2K×(Vgs–Vth1))-1/(2K×(Vgs–Vth2)))×2K×(Vgs–Vth1)\n\n[0063]＝1-(Vgs–Vth2)/(Vgs–Vth1)；\n\n[0064]由于|Vth1-Vth2|＝1V，开关MOS管导通时，开关MOS管的栅-源极节点电压Vgs远大于开关MOS管的阈值电压Vth，因此(Vgs–Vth2)与(Vgs–Vth1)的比值近似于1，则电阻变化值为Xr小于1％，控制开关MOS管的阈值电压Vth出现浮动1V时，电阻变化值为Xr小于1％，即可有效减少因开关MOS管的阈值电压Vth的波动对开关MOS管的输出电流的影响，进而能保证发光器件101的均一性和信赖性。\n\n[0065]为了更好地理解本申请实施例，示例性的，本实施例中的驱动模块的具体结构可以为2T1C结构、3T1C结构或6T1C结构，下面具体举例说明。\n\n[0066]在一个具体的实施例中，驱动模块为2T1C结构，驱动模块为2T1C结构具体为，如图2所示，驱动模块包括第一开关器件、第一驱动器件和第一储能电容C1，开关器件包括第一MOS管M1，第一驱动器件包括第一薄膜晶体管T1。\n\n[0067]还包括第一正电压VDD、第一负电压VSS、第一扫描线和第一数据线，第一正电压VDD和第一负电压VSS用于发光器件的驱动电源，第一扫描线用于提供扫描信号Vscan，第一数据线用于提供数据信号Vdata；\n\n[0068]第一MOS管M1，第一MOS管M1的漏极与发光器件的一端连接，发光器件的另一端与第一正电压VDD连接，第一MOS管M1的源极与第一负电压VSS连接，第一MOS管M1用于控制发光器件的电流导通。\n\n[0069]第一薄膜晶体管T1，第一薄膜晶体管T1的栅极与第一扫描线连接，第一薄膜晶体管T1的源极与第一数据线连接，第一薄膜晶体管T1的漏极与第一MOS管M1的栅极连接，第一薄膜晶体管T1用于控制第一MOS管M11接收数据信号Vdata。\n\n[0070]第一储能电容C1，第一储能电容C1的一端与第一MOS管M1的栅极连接，另一端与第一负电压VSS连接，第一储能电容C1用于储存第一MOS管M1的栅极处的数据信号Vdata。\n\n[0071]本实施例中的发光器件是电流驱动发光，即电流通过发光器件时，发光器件就可以发光，因此可以通过控制发光器件的电流来控制发光器件是否发光以及发光的强度，当第一薄膜晶体管T1的栅极接收到第一扫描线的扫描信号Vscan，第一薄膜晶体管T1导通，允许第一薄膜晶体管T1的源极接入第一数据线的数据信号Vdata，并输出至第一MOS管M1的栅极，当第一MOS管M1的栅极接收到数据信号Vdata后，第一MOS管M1导通，允许电流到达发光器件，发光器件开始发光，由于扫描信号Vscan在一个扫描周期内会有高电平变成低电平，第一薄膜晶体管T1关闭，数据信号Vdata无法接入驱动场效应管T1的栅极，为保证第一MOS管M1能够持续接收数据信号Vdata，使得发光器件持续发光，直到扫描信号Vscan下一次扫描周期，使用第一储能电容C1来储存第一MOS管M1栅极处数据信号Vdata，保证在本次扫描周期中，发光器件能够持续发光。\n\n[0072]本实施例中的第一驱动器件，即第一薄膜晶体管T1，控制第一MOS管M1导通，通过控制第一正电压VDD提供的输入电压和第一数据线提供的数据信号Vdata，控制第一MOS管M1的工作电压满足预先设定的条件，预先设定的条件即为：\n\n[0073]第一MOS管M1的栅-源极节点电压Vgs大于第一MOS管M1的阈值电压Vth，且第一MOS管M1的源-漏极节点电压Vds小于过驱动电压Vod，过驱动电压Vod为第一MOS管M1的栅-源极节点电压Vgs与第一MOS管M1的阈值电压Vth的电压差值；\n\n[0074]第一MOS管M1的阈值电压Vth浮动1V时，第一MOS管M1的漏极处的电阻变化值小于1％；\n\n[0075]从而使第一MOS管M1工作在第一MOS管的线性区，第一MOS管M1的工作电压包括第一MOS管M1的阈值电压Vth、栅极电压Vg、栅-源极节点电压Vgs和源-漏极节点电压Vds。控制第一MOS管M1在工作于第一MOS管M1的线性区内，当第一MOS管M1工作于线性区内时，第一MOS管M1近似于一个阻值一定的电阻，第一MOS管M1的漏极电流-漏极电压的曲线重合较好，第一MOS管M1输入不同的栅极电压所引起输出电流变化影响较小。\n\n[0076]在一个具体的实施例中，驱动模块为3T1C结构，驱动模块为3T1C结构具体为，如图3所示，驱动模块包括包括第二开关器件、第二驱动器件、第三驱动器件和第二储能电容C2，第二开关器件包括第二MOS管M2，第二驱动器件包括第二薄膜晶体管T2，第三驱动器件包括第三薄膜晶体管T3。\n\n[0077]还包括第二正电压VDD、第二负电压VSS、第二扫描线和第二数据线，第二正电压VDD和第二负电压VSS用于发光器件的驱动电源，第二扫描线用于提供扫描信号Vscan，第二数据线用于提供数据信号Vdata。\n\n[0078]第二MOS管M2，第二MOS管M2的漏极与发光器件的一端连接，发光器件的另一端与第二正电压VDD连接，第二MOS管M2的源极与第二负电压VSS连接，第二MOS管M2用于控制发光器件的电流导通。\n\n[0079]第二薄膜晶体管T2，第二薄膜晶体管T2的栅极与第二扫描线连接，第二薄膜晶体管T2的源极与第二数据线连接，第二薄膜晶体管T2的漏极与第二MOS管M2的栅极连接，第二薄膜晶体管T2用于控制第二MOS管M2接收数据信号Vdata。\n\n[0080]第三薄膜晶体管T3，第三薄膜晶体管T3的栅极与第二扫描线连接，第三薄膜晶体管T3的源极与第二数据线连接，第三薄膜晶体管T3的漏极与第二MOS管M2的栅极连接，第三薄膜晶体管T3用于在第二扫描线的控制下根据第二MOS管M2的阈值电压Vth对第二MOS管M2接收的数据信号Vdata进行补偿。\n\n[0081]第二储能能容C2，第二储能能容C2的一端与第二MOS管M2的栅极连接，另一端与第二负电压VSS连接，第二储能能容C2用于储存第二MOS管M2的栅极处的数据信号Vdata。\n\n[0082]本实施例中当第二薄膜晶体管T2的栅极接收到第二扫描线的扫描信号Vscan，第二薄膜晶体管T2导通，允许第二薄膜晶体管T2的源极接入第二数据线的数据信号Vdata，并输出至第二MOS管M2的栅极，当第二MOS管M2的栅极接收到数据信号Vdata后，第二MOS管M2导通，允许电流到达发光器件，发光器件开始发光，使用第二储能能容C2来储存第二MOS管M2栅极处数据信号Vdata，以保证发光器件能够持续发光，通过第三薄膜晶体管T3对第二MOS管M2接收的数据信号Vdata进行补偿，增强第二MOS管M2的稳定性，进一步保证发光器件的发光稳定性。\n\n[0083]本实施例中的第二驱动器件，即第二薄膜晶体管T2，控制第二MOS管M2导通，调节第二正电压VDD提供的输入电压和第二数据线提供的数据信号Vdata，控制第二MOS管M2的工作电压满足预先设定的条件，此处不再赘述预先设定的条件，在预先设定的条件下第二MOS管M2工作在第一MOS管的线性区，第二MOS管M2的工作电压包括第二MOS管M2的阈值电压Vth、栅极电压Vg、栅-源极节点电压Vgs和源-漏极节点电压Vds。控制第二MOS管M2在工作于第二MOS管M2的线性区内，当第二MOS管M2工作于线性区内时，第二MOS管M2近似于一个阻值一定的电阻，第二MOS管M2的漏极电流-漏极电压的曲线重合较好，第二MOS管M2输入不同的栅极电压所引起输出电流变化影响较小。\n\n[0084]在一个具体的实施例中，驱动模块为6T1C结构，驱动模块为6T1C结构具体为，如图4所示，驱动模块包括第三开关器件、第四驱动器件、第五驱动器件、第六驱动器件、第七驱动器件、第八驱动器件和第三储能电容C3，第三开关器件包括第三MOS管M3，第四驱动器件包括第四薄膜晶体管T4，第五驱动器件包括第五薄膜晶体管T5，第六驱动器件包括第六薄膜晶体管T6，第七驱动器件包括第七薄膜晶体管T7，第八驱动器件包括第八薄膜晶体管T8。\n\n[0085]还包括第三正电压VDD、第三负电压VSS以及复位电源Vint，第三正电压VDD和第三负电压VSS用于发光器件的驱动电源，所述复位电源Vint用于提供复位电压，还包括三条扫描线，扫描线SCAN1、扫描线SCAN2、扫描线SCAN3，三条扫描线均用于提供扫描信号Vscan，还包括数据线Dm，数据线Dm用于提供数据信号Vdata。\n\n[0086]第三MOS管M3，第三MOS管M3的栅极与第七薄膜晶体管T7的漏极连接，第三MOS管M3的源极与第五薄膜晶体管T5的漏极连接。第三MOS管M3用于控制流向发光器件的电流的幅度。\n\n[0087]第四薄膜晶体管T4，第四薄膜晶体管T4的漏极与发光器件的一端连接，发光器件的另一端与第三负电压VSS连接，第四薄膜晶体管T4的源极与第三MOS管M3的漏极连接，第四薄膜晶体管T4的栅极与扫描线SCAN1连接。第四薄膜晶体管T4用于控制发光器件的电流导通。\n\n[0088]第五薄膜晶体管T5，第五薄膜晶体管T5的栅极与扫描线SCAN2连接，第五薄膜晶体管T5的源极与数据线Dm连接。第五薄膜晶体管T5用于控制第三MOS管M3接收数据线Dm输出的数据信号Vdata。\n\n[0089]第六薄膜晶体管T6，第六薄膜晶体管T6的栅极与扫描线SCAN2连接，第六薄膜晶体管T6的栅极和第五薄膜晶体管T5的栅极与扫描线SCAN2连接的连接点构成连接点N1，第六薄膜晶体管T6的源极与第三MOS管M3的漏极连接，第六薄膜晶体管T6的源极、第三MOS管M3的漏极以及第四薄膜晶体管T4的源极的连接点共同构成连接点N2，第六薄膜晶体管T6的漏极与第三MOS管M3的栅极连接并构成连接点N3。第六薄膜晶体管T6用于控制连接点N2与连接点N3之间的导通。\n\n[0090]第七薄膜晶体管T7，第七薄膜晶体管T7的栅极与扫描线SCAN3连接，第七薄膜晶体管T7的源极与复位电源Vint连接，第七薄膜晶体管T7的漏极与第三储能电容C3的一端连接，第七薄膜晶体管T7的漏极、第三储能电容C3的一端以及第三MOS管M3的栅极的连接点构成连接点N4。第七薄膜晶体管T7用于控制连接点N4处的电压输入，使复位电源Vint作为复位电压提供至连接点N4处。\n\n[0091]第八薄膜晶体管T8，第八薄膜晶体管T8的栅极与扫描线SCAN1连接，第八薄膜晶体管T8的源极与第三正电压VDD连接。第八薄膜晶体管T8与第四薄膜晶体管T4共同作用，用于控制发光器件的电流导通。\n\n[0092]第三储能电容C3，第三储能电容C3的一端与第七薄膜晶体管T7的漏极连接，另一端与第三正电压VDD连接，第三储能电容C3用于储存扫描线SCAN2的扫描信号。\n\n[0093]本实施例中第五薄膜晶体管T5的栅极接收扫描线SCAN2输出的扫描信号Vscan2，第五薄膜晶体管T5导通，将数据线Dm输出的数据信号Vdata提供至第三MOS管M3的源极；\n\n[0094]第四薄膜晶体管T4的栅极和第八薄膜晶体管T8的栅极同时接收扫描线SCAN1输出的扫描信号Vscan1，第四薄膜晶体管T4和第八薄膜晶体管T8导通，第八薄膜晶体管T8的导通控制第三MOS管M3的源极连通于第三正电压VDD，第三MOS管M3的得电，由于第四薄膜晶体管T4也导通，控制第三MOS管M3的漏极连通于发光器件，进而第三MOS管M3允许数据信号Vdata到达发光器件，发光器件发光。\n\n[0095]发光器件发光过程中，由于第三MOS管M3的阈值电压会存在波动，将第三MOS管M3的阈值电压的信息储存在第三储能电容C3中，利用第六薄膜晶体管T6作为驱动模块中的阈值电压补偿晶体管，应用过程中，第六薄膜晶体管T6的栅极接收扫描线SCAN2输出的扫描信号Vscan2，第六薄膜晶体管T6导通，从而控制连接点N2与连接点N3之间的导通，再通过第三储能电容C3实时补偿第三MOS管M3的阈值电压变化，增强发光器件的发光均一性。\n\n[0096]工作过程中，由于第六薄膜晶体管T6存在漏电流，容易导致第三MOS管M3的栅极处的驱动电压发生变化，影响发光器件的稳定性，导致发光器件出现闪烁严重的问题，利用第七薄膜晶体管T7作为第六薄膜晶体管T6的漏电流补偿晶体管，第七薄膜晶体管T7接收到扫描线SCAN3输出的扫描信号Vscan3时，第七薄膜晶体管T7导通，连接点N3处持续保持复位电源Vint提供的复位电压，即有效减少第六薄膜晶体管T6的漏电流对第三MOS管M3的栅极处的驱动电压造成的影响，改善发光器件出现闪烁严重的现象。\n\n[0097]本实例中的第四驱动器件和第八驱动器件，即第四薄膜晶体管T4的栅极和第八薄膜晶体管T8，控制第三MOS管M3导通，调节第三正电压VDD提供的输入电压和复位电源Vint提供的复位电压，使第三MOS管M3的工作电压满足预先设定的条件，此处不再赘述预先设定的条件，在预先设定的条件下，第三MOS管M3工作在第三MOS管M3的线性区，第三MOS管M3的工作电压包括第三MOS管M3的阈值电压Vth、栅极电压Vg、栅-源极节点电压Vgs和源-漏极节点电压Vds。第三MOS管M3工作在第一MOS管的线性区，第三MOS管M3的工作电压包括第三MOS管M3的阈值电压Vth、栅极电压Vg、栅-源极节点电压Vgs和源-漏极节点电压Vds。控制第三MOS管M3在工作于第三MOS管M3的线性区内，当第三MOS管M3工作于线性区内时，第三MOS管M3近似于一个阻值一定的电阻，第三MOS管M3的漏极电流-漏极电压的曲线重合较好，第三MOS管M3输入不同的栅极电压所引起输出电流变化影响较小。\n\n[0098]在一个具体的实施例中，本申请提供了一种背光驱动方法，应用于背光驱动电路中，背光驱动电路包括：包括发光器件和驱动模块，驱动模块包括开关器件和驱动器件，开关器件与发光器件连接，开关器件用于控制发光器件的通断，驱动器件与开关器件连接，驱动器件用于控制开关器件的通断；\n\n[0099]如图5所示，背光驱动方法包括以下步骤201～202：\n\n[0100]201、设置开关MOS管作为开关器件；\n\n[0101]由于发光器件是电流驱动器件，背光信号为电压控制，采用开关MOS管作为控制发光器件电流导通的开关器件，控制更加稳定。\n\n[0102]设置开关MOS管作为开关器件具体包括：根据发光器件的额定电压和额定电流对开关MOS管进行选型，对开关MOS管的工作电压进行测试，开关MOS管的工作电压包括开关MOS管的阈值电压Vth、栅极电压Vg、栅-源极节点电压Vgs和源-漏极节点电压Vds，选择工作电压能够满足预先设定的条件的开关MOS管，将该开关MOS管设置为用于控制发光器件电流导通的开关器件。\n\n[0103]202、通过驱动器件控制开关MOS管的工作电压满足预先设定的条件，在预先设定的条件下，开关MOS管工作在开关MOS管的线性区；\n\n[0104]驱动器件控制开关MOS管的电流导通，通过控制背光驱动电路中的电源电压以及开关MOS管的栅极电压，以控制开关MOS管工作在线性区，使开关MOS管近似于一个阻值一定的电阻，以保持通过发光器件的电流稳定。\n\n[0105]在一个具体的实施例中，通过开关器件控制开关MOS管的工作电压满足预先设定的条件，包括：控制开关MOS管的栅-源极节点电压Vgs大于开关MOS管的阈值电压Vth，且开关MOS管的源-漏极节点电压Vds小于过驱动电压，过驱动电压为开关MOS管的栅-源极节点电压Vgs与开关MOS管的阈值电压Vth的电压差值。\n\n[0106]具体应用中，将开关MOS管的栅极接入的电压足够大，即开关MOS管的栅极电压Vg足够大，再根据开关MOS管的电特性选择合适的电压电源作为驱动电路中的驱动电源，以得到合适的源-漏极节点电压Vds，最终控制开关MOS管的栅-源极节点电压Vgs大于开关MOS管的阈值电压Vth，并控制开关MOS管的源-漏极节点电压Vds小于过驱动电压Vod。\n\n[0107]在一个具体的实施例中，通过开关器件控制开关MOS管的工作电压满足预先设定的条件，包括：设定开关MOS管的栅极电压Vg设定于4～6V，且控制开关MOS管的阈值电压Vth满足以下条件：开关MOS管的阈值电压Vth浮动1V时，开关MOS管的漏极处的电阻变化值小于1％，电阻变化值为(R1-R2)/R1，其中，R1为开关MOS管在开关MOS管的阈值电压Vth浮动前的电阻，R2为开关MOS管在开关MOS管的阈值电压Vth浮动后的电阻。\n\n[0108]在一个具体的实施例中，本申请提供了一种背光模组，背光模组包括基板，基板上搭载有驱动电路，驱动电路采用的是背光驱动电路，背光驱动电路包括发光器件和驱动模块，驱动模块包括开关器件和驱动器件，开关器件与发光器件连接，开关器件用于控制发光器件的通断，驱动器件与开关器件连接，驱动器件用于控制开关器件的通断；\n\n[0109]开关器件包括开关MOS管，驱动器件用于控制开关MOS管的工作电压满足预先设定的条件，在预先设定的条件下，开关MOS管工作在开关MOS管的线性区，开关MOS管的工作电压包括开关MOS管的阈值电压Vth、栅极电压Vg、栅-源极节点电压Vgs和源-漏极节点电压Vds。\n\n[0110]以上背光驱动电路的具体实施可参见前面的实施例，在此不再赘述。\n\n[0111]以上对本申请实施例所提供的一种背光驱动电路、驱动方法及背光模组进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种背光驱动电路、驱动方法及背光模组。\n\n背景技术\n\n[0002]随着高阶TV市场对画质的要求越来越高，提升显示画质成为高阶TV的一个新需求。目前分辨率为7680*4320(8K)的有机发光器件(Organic Light-Emitting Diode，OLED)，即8K OLED受限于补偿电路、铟镓锌氧化物(indium gallium zinc oxide，IGZO)背板技术及驱动设计等问题，尚需开发。而微型发光二极管(Light-Emitting Diode，LED)，即Mini LED作为一个全新的显示技术，在亮度、功耗上较OLED和双层叠加面板(dual cell)有优势。\n\n[0003]Mini LED背光相比传统背光的区别在于：Mini LED可以通过区域调光(localdimming)实现百万级的对比度。传统背光开启时所有的灯都会开启，在面板上不显示的区域也会受到背光照射，导致暗态不够黑，对比度低；而Mini LED可以与面板的显示画面匹配实现区域开启背光，面板上不显示的区域背光不开启，实现完全的黑态，从而达到百万级的对比度。其中采用有源矩阵驱动技术(Active matrix，AM)的Mini LED，即AM Mini LED在提高显示画质的同时可以大幅降低驱动成本，因此目前正有多家企业在开发。\n\n[0004]目前Mini LED的驱动架构多以2个具有开关功能的薄膜晶体管(Thin FilmTransistor，TFT)和1个储存电荷的电容(Capacitance，C)为主，但LED为电流驱动器件，AMMini-LED背板信号为电压控制，因此对TFT器件的稳定性要求非常高。特别是驱动TFT的稳定性及均一性会直接影响到LED的发光亮度。但目前的无定形硅(a-Si)、IGZO TFT器件均难以满足这个需求，而低温多晶硅(Low Temperature Ploy silicon,LTPS)无法应用在大尺寸上，因此需要设计新的驱动电路来满足AM Mini-LED的驱动需求。\n\n发明内容\n\n[0005]本申请提供一种减小传统结构中驱动TFT的阈值电压的变化对发光器件亮度的影响，提升发光器件的发光均一性及发光器件的信赖性的一种背光驱动电路及方法。\n\n[0006]一方面，本申请提供一种背光驱动电路，包括发光器件和驱动模块，所述驱动模块包括开关器件和驱动器件，所述开关器件与所述发光器件连接，所述开关器件用于控制所述发光器件的通断，所述驱动器件与所述开关器件连接；\n\n[0007]所述开关器件包括开关MOS管，所述驱动器件用于控制所述开关MOS管的工作电压满足预先设定的条件，在所述预先设定的条件下，所述开关MOS管工作在开关MOS管的线性区，所述开关MOS管的工作电压包括所述开关MOS管的阈值电压、栅极电压、栅-源极节点电压和源-漏极节点电压。\n\n[0008]在本申请一种可能的实现方式中，所述驱动器件包括驱动薄膜晶体管、驱动MOS管或驱动传输门。\n\n[0009]在本申请一种可能的实现方式中，所述预先设定的条件包括：\n\n[0010]所述开关MOS管的栅-源极节点电压大于所述开关MOS管的阈值电压，且所述开关MOS管的源-漏极节点电压小于过驱动电压，所述过驱动电压为所述开关MOS管的栅-源极节点电压与所述开关MOS管的阈值电压的电压差值。\n\n[0011]在本申请一种可能的实现方式中，所述预先设定的条件包括：\n\n[0012]所述开关MOS管的阈值电压满足以下条件：所述开关MOS管的阈值电压浮动1V时，所述开关MOS管的漏极处的电阻变化值小于1％，所述电阻变化值为(R1-R2)/R1，其中，R1为所述开关MOS管在开关MOS管的阈值电压浮动前的电阻，R2为所述开关MOS管在开关MOS管的阈值电压浮动后的电阻。\n\n[0013]在本申请一种可能的实现方式中，所述驱动模块包括第一开关器件、第一驱动器件和第一储能电容，所述第一开关器件包括第一MOS管，所述第一驱动器件包括第一薄膜晶体管；\n\n[0014]所述第一驱动器件用于控制所述第一MOS管的工作电压满足预先设定的条件，在所述预先设定的条件下，所述第一MOS管工作在第一MOS管的线性区，所述第一MOS管的工作电压包括所述第一MOS管的阈值电压、栅极电压、栅-源极节点电压和源-漏极节点电压。\n\n[0015]在本申请一种可能的实现方式中，所述驱动模块包括第二开关器件、第二驱动器件、第三驱动器件和第二储能电容，所述第二开关器件包括第二MOS管，所述第二驱动器件包括第二薄膜晶体管，第三驱动器件包括第三薄膜晶体管；\n\n[0016]所述第二驱动器件和第三驱动器件用于控制所述第二MOS管的工作电压满足预先设定的条件，在所述预先设定的条件下，所述第二MOS管工作在第二MOS管的线性区，所述第二MOS管的工作电压包括所述第二MOS管的阈值电压、栅极电压、栅-源极节点电压和源-漏极节点电压。\n\n[0017]在本申请一种可能的实现方式中，所述驱动模块包括第三开关器件、第四驱动器件、第五驱动器件、第六驱动器件、第七驱动器件、第八驱动器件和第三储能电容，所述第三开关器件包括第五MOS管，所述第四驱动器件包括第四薄膜晶体管，第五驱动器件包括第五薄膜晶体管，第六驱动器件包括第六薄膜晶体管，第七驱动器件包括第七薄膜晶体管，第八驱动器件包括第八薄膜晶体管；\n\n[0018]所述第四驱动器件、所述第五驱动器件、所述第六驱动器件、所述第七驱动器件、所述第八驱动器件用于控制所述第五MOS管的工作电压满足预先设定的条件，在所述预先设定的条件下，所述第五MOS管工作在第五MOS管的线性区，所述第五MOS管的工作电压包括所述第五MOS管的阈值电压、栅极电压、栅-源极节点电压和源-漏极节点电压。\n\n[0019]在本申请一种可能的实现方式中，所述发光器件包括Mini-LED、Micro-LED或OLED。\n\n[0020]另一方面，本申请提供了一种背光驱动方法，应用于背光驱动电路中，所述背光驱动电路包括：包括发光器件和驱动模块，所述驱动模块包括开关器件和驱动器件，所述开关器件与所述发光器件连接，所述开关器件用于控制所述发光器件的通断，所述驱动器件与所述开关器件连接，所述驱动器件用于控制所述开关器件的通断；\n\n[0021]所述方法包括：\n\n[0022]设置开关MOS管作为所述开关器件，通过所述驱动器件控制所述开关MOS管的工作电压满足预先设定的条件，在所述预先设定的条件下，所述开关MOS管工作在开关MOS管的线性区，所述开关MOS管的工作电压包括所述开关MOS管的阈值电压、栅极电压、栅-源极节点电压和源-漏极节点电压。\n\n[0023]在本申请一种可能的实现方式中，所述通过所述开关器件控制所述开关MOS管的工作电压满足预先设定的条件，包括：\n\n[0024]控制所述开关MOS管的栅-源极节点电压大于所述开关MOS管的阈值电压，且所述开关MOS管的源-漏极节点电压小于过驱动电压，所述过驱动电压为所述开关MOS管的栅-源极节点电压与所述开关MOS管的阈值电压的电压差值。\n\n[0025]在本申请一种可能的实现方式中，所述通过所述开关器件控制所述开关MOS管的工作电压满足预先设定的条件，包括：\n\n[0026]控制所述开关MOS管的阈值电压满足以下条件：所述开关MOS管的阈值电压浮动1V时，所述开关MOS管的漏极处的电阻变化值小于1％，所述电阻变化值为(R1-R2)/R1，其中，R1为所述开关MOS管在开关MOS管的阈值电压浮动前的电阻，R2为所述开关MOS管在开关MOS管的阈值电压浮动后的电阻。\n\n[0027]另一方面，本申请提供了一种AM Mini-LED、Micro LED的背光模组，其上搭载有驱动电路，所述驱动电路采用的是所述的背光驱动电路。\n\n[0028]本申请中将开关MOS管作为驱动模块中的开关器件，由于开关MOS管的沟道材料是单晶硅，相对于传统作为开关器件的薄膜晶体管，开关MOS管的稳定性较好，并且本申请通过驱动器件调整开关MOS管的工作电压，从而控制开关MOS管在工作于开关MOS管的线性区内，当开关MOS管工作于线性区内时，开关MOS管近似于一个阻值一定的电阻，开关MOS管的漏极电流-漏极电压的曲线重合较好，开关MOS管输入不同的栅极电压所引起输出电流变化影响较小，从而减小开关MOS管输出电流的变化带来的发光器件的亮度变化，提升发光器件的发光均一性及发光器件的信赖性。\n\n附图说明\n\n[0029]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0030]图1是本申请一实施例提供的背光驱动电路的一个实施例结构示意图；\n\n[0031]图2是本申请另一实施例提供的背光驱动电路的一个实施例结构示意图；\n\n[0032]图3是本申请另一实施例提供的背光驱动电路的一个实施例结构示意图；\n\n[0033]图4是本申请另一实施例提供的背光驱动电路的一个实施例结构示意图；\n\n[0034]图5是本申请另一实施例中提供的背光驱动方法的流程示意图。\n\n具体实施方式\n\n[0035]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0036]在本发明的描述中，需要理解的是，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0037]在本申请中，“示例性”一词用来表示“用作例子、例证或说明”。本申请中被描述为“示例性”的任何实施例不一定被解释为比其它实施例更优选或更具优势。为了使本领域任何技术人员能够实现和使用本发明，给出了以下描述。在以下描述中，为了解释的目的而列出了细节。应当明白的是，本领域普通技术人员可以认识到，在不使用这些特定细节的情况下也可以实现本发明。在其它实例中，不会对公知的结构和过程进行详细阐述，以避免不必要的细节使本发明的描述变得晦涩。因此，本发明并非旨在限于所示的实施例，而是与符合本申请所公开的原理和特征的最广范围相一致。\n\n[0038]本申请实施例提供一种背光驱动电路、驱动方法及背光模组，以下分别进行详细说明。\n\n[0039]本申请提供一种背光驱动电路，如图1所示，包括发光器件101和驱动模块102，驱动模块102包括开关器件103和驱动器件104，开关器件103与发光器件101连接，开关器件103用于控制发光器件101的通断，驱动器件104与开关器件103连接，驱动器件104用于控制开关器件103的通断；\n\n[0040]开关器件103包括开关MOS管，驱动器件104用于控制开关MOS管的工作电压满足预先设定的条件，在预先设定的条件下，开关MOS管工作在开关MOS管的线性区，开关MOS管的工作电压包括开关MOS管的阈值电压Vth、栅极电压Vg、栅-源极节点电压Vgs和源-漏极节点电压Vds。\n\n[0041]本申请中将开关MOS管作为驱动模块102中的开关器件103，由于开关MOS管的沟道材料是单晶硅，且是电压型控制器件，相对于传统作为开关器件103的薄膜晶体管，开关MOS管更能够适应于背光的驱动电路，开关MOS管的稳定性更好，且并且本申请通过驱动器件104调整开关MOS管的工作电压，从而控制开关MOS管在工作于开关MOS管的线性区内，当开关MOS管工作于线性区内时，开关MOS管近似于一个阻值一定的电阻，开关MOS管的漏极电流-漏极电压的曲线重合较好，开关MOS管输入不同的栅极电压所引起输出电流变化影响较小，从而减小开关MOS管输出电流的变化带来的发光器件101的亮度变化，提升发光器件101的发光均一性及发光器件101的信赖性。\n\n[0042]本申请实施例中，驱动器件104可以包括驱动薄膜晶体管、驱动MOS管或驱动传输门。驱动薄膜晶体管、驱动MOS管和驱动传输门均为可控开关器件103，均可作为用于控制开关器件103的通断，由于驱动薄膜晶体管、驱动MOS管和驱动传输门的源极和漏极是对称的，采用驱动薄膜晶体管、驱动MOS管和驱动传输门中的任意一项作为驱动器件104时，驱动器件104的源极和漏极是可以互换的，本实施例中采用驱动MOS管时，可以包括P型驱动MOS管和/或N型驱动MOS管两种，其中，P型晶体管为在栅极为低电平时导通，在栅极为高电平时截止，N型晶体管为在栅极为高电平时导通，在栅极为低电平时截止，开关MOS管同理。\n\n[0043]本申请实施例中，发光器件101可以包括Mini-LED、Micro-LED或OLED。\n\n[0044]在另一个具体实施例中，预先设定的条件包括：开关MOS管的栅-源极节点电压Vgs大于开关MOS管的阈值电压Vth，且开关MOS管的源-漏极节点电压Vds小于过驱动电压Vod，过驱动电压Vod为开关MOS管的栅-源极节点电压Vgs与开关MOS管的阈值电压Vth的电压差值。\n\n[0045]下面根据开关MOS管的电特性(I/V特性)进行具体分析。\n\n[0046]由于开关MOS管的输出电流Id由开关MOS管的μCox、开关MOS管的W和L、开关MOS管的栅-源极节点电压Vgs和源-漏极节点电压Vds决定，开关MOS管导通时，开关MOS管的输出电流Id可以由下式表示：\n\n[0047]Id＝K×((Vgs–Vth)×Vds–(Vds2/2))；\n\n[0048]其中，K为开关MOS管的导电因子，K＝1/2Cox(μW/L)，Cox为栅氧电容，μ为开关MOS管的载流子迁移率，W和L分别为开关MOS管的沟道的宽度和长度，W/L指的是开关MOS管的沟道宽长比。\n\n[0049]当开关MOS管的栅极处于悬空，或接入的电压较小，未达到开关MOS管的阈值电压Vth时，即开关MOS管的Vgs≤Vth时，此刻开关MOS管的输出电流Id＝0，开关MOS管处于截止区。\n\n[0050]当开关MOS管的栅极接入的电压足够大，即开关MOS管的栅极电压Vg足够大，再根据开关MOS管的电特性选择合适的电压电源作为驱动电路中的驱动电源，以得到合适的源-漏极节点电压Vds，最终控制开关MOS管的栅-源极节点电压Vgs和源-漏极节点电压Vds满足Vgs>Vth，Vds≤Vgs–Vth时，此刻开关MOS管的输出电流Id则即为：Id＝K×((Vgs–Vth)×Vds–(Vds2/2))，即满足开关MOS管处于线性区。\n\n[0051]当开关MOS管工作于线性区时，开关MOS管呈阻态，开关MOS管的输出电流几乎没有变化，开关MOS管的输出电流Id与栅-源极节点电压Vgs存在正相关关系。由于发光器件101是电流驱动器件104，其亮度与开关MOS管的输出电流呈正比，当开关MOS管满足导通条件且呈阻态时，驱动器件104的阈值电压Vth的变化对开关MOS管的输出电流影响均较小，进而能保证发光器件101的均一性和信赖性。\n\n[0052]在另一个具体实施例中，预先设定的条件包括：开关MOS管的阈值电压Vth满足以下条件：开关MOS管的阈值电压Vth浮动1V时，开关MOS管的漏极处的电阻变化值小于1％，电阻变化值为(R1-R2)/R1，其中，R1为开关MOS管在开关MOS管的阈值电压Vth浮动前的电阻，R2为开关MOS管在开关MOS管的阈值电压Vth浮动后的电阻。\n\n[0053]继续根据根据开关MOS管的电特性(I/V特性)进行具体分析。\n\n[0054]开关MOS管的输出电流Id可以由下式表示：\n\n[0055]Id＝K×((Vgs–Vth)×Vds–(Vds2/2))\n\n[0056]当开关MOS管的栅极接入的电压足够大，即开关MOS管的栅极电压Vg足够大，再根据开关MOS管的电特性选择合适的电压电源作为驱动电路中的驱动电源，以得到合适的源-漏极节点电压Vds，最终控制开关MOS管的阈值电压Vth、开关MOS管的栅-源极节点电压Vgs和源-漏极节点电压Vds满足Vds[0057]当开关MOS管的源-漏极节点电压Vds较小时，开关MOS管的输出电流Id是源-漏极节点电压Vds的线性函数，此刻开关MOS管可以等效为一个电阻，开关MOS管的阻值可以为：\n\n[0058]Ron＝Vds/Id＝1/(2K×(Vgs–Vth))；\n\n[0059]具体实施过程中，由于开关MOS管的阈值电压Vth会受到温度影响出现波动，当开关MOS管的阈值电压Vth出现浮动1V时，设开关MOS管的阈值电压Vth出现浮动前的阈值电压为Vth1，则R1＝1/(2K×(Vgs–Vth1))，开关MOS管的阈值电压Vth出现浮动后的阈值电压为Vth2，则R2＝1/(2K×(Vgs–Vth2))；\n\n[0060]设电阻变化值为Xr，则\n\n[0061]Xr＝(R1-R2)/R1\n\n[0062]＝(1/(2K×(Vgs–Vth1))-1/(2K×(Vgs–Vth2)))×2K×(Vgs–Vth1)\n\n[0063]＝1-(Vgs–Vth2)/(Vgs–Vth1)；\n\n[0064]由于|Vth1-Vth2|＝1V，开关MOS管导通时，开关MOS管的栅-源极节点电压Vgs远大于开关MOS管的阈值电压Vth，因此(Vgs–Vth2)与(Vgs–Vth1)的比值近似于1，则电阻变化值为Xr小于1％，控制开关MOS管的阈值电压Vth出现浮动1V时，电阻变化值为Xr小于1％，即可有效减少因开关MOS管的阈值电压Vth的波动对开关MOS管的输出电流的影响，进而能保证发光器件101的均一性和信赖性。\n\n[0065]为了更好地理解本申请实施例，示例性的，本实施例中的驱动模块的具体结构可以为2T1C结构、3T1C结构或6T1C结构，下面具体举例说明。\n\n[0066]在一个具体的实施例中，驱动模块为2T1C结构，驱动模块为2T1C结构具体为，如图2所示，驱动模块包括第一开关器件、第一驱动器件和第一储能电容C1，开关器件包括第一MOS管M1，第一驱动器件包括第一薄膜晶体管T1。\n\n[0067]还包括第一正电压VDD、第一负电压VSS、第一扫描线和第一数据线，第一正电压VDD和第一负电压VSS用于发光器件的驱动电源，第一扫描线用于提供扫描信号Vscan，第一数据线用于提供数据信号Vdata；\n\n[0068]第一MOS管M1，第一MOS管M1的漏极与发光器件的一端连接，发光器件的另一端与第一正电压VDD连接，第一MOS管M1的源极与第一负电压VSS连接，第一MOS管M1用于控制发光器件的电流导通。\n\n[0069]第一薄膜晶体管T1，第一薄膜晶体管T1的栅极与第一扫描线连接，第一薄膜晶体管T1的源极与第一数据线连接，第一薄膜晶体管T1的漏极与第一MOS管M1的栅极连接，第一薄膜晶体管T1用于控制第一MOS管M11接收数据信号Vdata。\n\n[0070]第一储能电容C1，第一储能电容C1的一端与第一MOS管M1的栅极连接，另一端与第一负电压VSS连接，第一储能电容C1用于储存第一MOS管M1的栅极处的数据信号Vdata。\n\n[0071]本实施例中的发光器件是电流驱动发光，即电流通过发光器件时，发光器件就可以发光，因此可以通过控制发光器件的电流来控制发光器件是否发光以及发光的强度，当第一薄膜晶体管T1的栅极接收到第一扫描线的扫描信号Vscan，第一薄膜晶体管T1导通，允许第一薄膜晶体管T1的源极接入第一数据线的数据信号Vdata，并输出至第一MOS管M1的栅极，当第一MOS管M1的栅极接收到数据信号Vdata后，第一MOS管M1导通，允许电流到达发光器件，发光器件开始发光，由于扫描信号Vscan在一个扫描周期内会有高电平变成低电平，第一薄膜晶体管T1关闭，数据信号Vdata无法接入驱动场效应管T1的栅极，为保证第一MOS管M1能够持续接收数据信号Vdata，使得发光器件持续发光，直到扫描信号Vscan下一次扫描周期，使用第一储能电容C1来储存第一MOS管M1栅极处数据信号Vdata，保证在本次扫描周期中，发光器件能够持续发光。\n\n[0072]本实施例中的第一驱动器件，即第一薄膜晶体管T1，控制第一MOS管M1导通，通过控制第一正电压VDD提供的输入电压和第一数据线提供的数据信号Vdata，控制第一MOS管M1的工作电压满足预先设定的条件，预先设定的条件即为：\n\n[0073]第一MOS管M1的栅-源极节点电压Vgs大于第一MOS管M1的阈值电压Vth，且第一MOS管M1的源-漏极节点电压Vds小于过驱动电压Vod，过驱动电压Vod为第一MOS管M1的栅-源极节点电压Vgs与第一MOS管M1的阈值电压Vth的电压差值；\n\n[0074]第一MOS管M1的阈值电压Vth浮动1V时，第一MOS管M1的漏极处的电阻变化值小于1％；\n\n[0075]从而使第一MOS管M1工作在第一MOS管的线性区，第一MOS管M1的工作电压包括第一MOS管M1的阈值电压Vth、栅极电压Vg、栅-源极节点电压Vgs和源-漏极节点电压Vds。控制第一MOS管M1在工作于第一MOS管M1的线性区内，当第一MOS管M1工作于线性区内时，第一MOS管M1近似于一个阻值一定的电阻，第一MOS管M1的漏极电流-漏极电压的曲线重合较好，第一MOS管M1输入不同的栅极电压所引起输出电流变化影响较小。\n\n[0076]在一个具体的实施例中，驱动模块为3T1C结构，驱动模块为3T1C结构具体为，如图3所示，驱动模块包括包括第二开关器件、第二驱动器件、第三驱动器件和第二储能电容C2，第二开关器件包括第二MOS管M2，第二驱动器件包括第二薄膜晶体管T2，第三驱动器件包括第三薄膜晶体管T3。\n\n[0077]还包括第二正电压VDD、第二负电压VSS、第二扫描线和第二数据线，第二正电压VDD和第二负电压VSS用于发光器件的驱动电源，第二扫描线用于提供扫描信号Vscan，第二数据线用于提供数据信号Vdata。\n\n[0078]第二MOS管M2，第二MOS管M2的漏极与发光器件的一端连接，发光器件的另一端与第二正电压VDD连接，第二MOS管M2的源极与第二负电压VSS连接，第二MOS管M2用于控制发光器件的电流导通。\n\n[0079]第二薄膜晶体管T2，第二薄膜晶体管T2的栅极与第二扫描线连接，第二薄膜晶体管T2的源极与第二数据线连接，第二薄膜晶体管T2的漏极与第二MOS管M2的栅极连接，第二薄膜晶体管T2用于控制第二MOS管M2接收数据信号Vdata。\n\n[0080]第三薄膜晶体管T3，第三薄膜晶体管T3的栅极与第二扫描线连接，第三薄膜晶体管T3的源极与第二数据线连接，第三薄膜晶体管T3的漏极与第二MOS管M2的栅极连接，第三薄膜晶体管T3用于在第二扫描线的控制下根据第二MOS管M2的阈值电压Vth对第二MOS管M2接收的数据信号Vdata进行补偿。\n\n[0081]第二储能能容C2，第二储能能容C2的一端与第二MOS管M2的栅极连接，另一端与第二负电压VSS连接，第二储能能容C2用于储存第二MOS管M2的栅极处的数据信号Vdata。\n\n[0082]本实施例中当第二薄膜晶体管T2的栅极接收到第二扫描线的扫描信号Vscan，第二薄膜晶体管T2导通，允许第二薄膜晶体管T2的源极接入第二数据线的数据信号Vdata，并输出至第二MOS管M2的栅极，当第二MOS管M2的栅极接收到数据信号Vdata后，第二MOS管M2导通，允许电流到达发光器件，发光器件开始发光，使用第二储能能容C2来储存第二MOS管M2栅极处数据信号Vdata，以保证发光器件能够持续发光，通过第三薄膜晶体管T3对第二MOS管M2接收的数据信号Vdata进行补偿，增强第二MOS管M2的稳定性，进一步保证发光器件的发光稳定性。\n\n[0083]本实施例中的第二驱动器件，即第二薄膜晶体管T2，控制第二MOS管M2导通，调节第二正电压VDD提供的输入电压和第二数据线提供的数据信号Vdata，控制第二MOS管M2的工作电压满足预先设定的条件，此处不再赘述预先设定的条件，在预先设定的条件下第二MOS管M2工作在第一MOS管的线性区，第二MOS管M2的工作电压包括第二MOS管M2的阈值电压Vth、栅极电压Vg、栅-源极节点电压Vgs和源-漏极节点电压Vds。控制第二MOS管M2在工作于第二MOS管M2的线性区内，当第二MOS管M2工作于线性区内时，第二MOS管M2近似于一个阻值一定的电阻，第二MOS管M2的漏极电流-漏极电压的曲线重合较好，第二MOS管M2输入不同的栅极电压所引起输出电流变化影响较小。\n\n[0084]在一个具体的实施例中，驱动模块为6T1C结构，驱动模块为6T1C结构具体为，如图4所示，驱动模块包括第三开关器件、第四驱动器件、第五驱动器件、第六驱动器件、第七驱动器件、第八驱动器件和第三储能电容C3，第三开关器件包括第三MOS管M3，第四驱动器件包括第四薄膜晶体管T4，第五驱动器件包括第五薄膜晶体管T5，第六驱动器件包括第六薄膜晶体管T6，第七驱动器件包括第七薄膜晶体管T7，第八驱动器件包括第八薄膜晶体管T8。\n\n[0085]还包括第三正电压VDD、第三负电压VSS以及复位电源Vint，第三正电压VDD和第三负电压VSS用于发光器件的驱动电源，所述复位电源Vint用于提供复位电压，还包括三条扫描线，扫描线SCAN1、扫描线SCAN2、扫描线SCAN3，三条扫描线均用于提供扫描信号Vscan，还包括数据线Dm，数据线Dm用于提供数据信号Vdata。\n\n[0086]第三MOS管M3，第三MOS管M3的栅极与第七薄膜晶体管T7的漏极连接，第三MOS管M3的源极与第五薄膜晶体管T5的漏极连接。第三MOS管M3用于控制流向发光器件的电流的幅度。\n\n[0087]第四薄膜晶体管T4，第四薄膜晶体管T4的漏极与发光器件的一端连接，发光器件的另一端与第三负电压VSS连接，第四薄膜晶体管T4的源极与第三MOS管M3的漏极连接，第四薄膜晶体管T4的栅极与扫描线SCAN1连接。第四薄膜晶体管T4用于控制发光器件的电流导通。\n\n[0088]第五薄膜晶体管T5，第五薄膜晶体管T5的栅极与扫描线SCAN2连接，第五薄膜晶体管T5的源极与数据线Dm连接。第五薄膜晶体管T5用于控制第三MOS管M3接收数据线Dm输出的数据信号Vdata。\n\n[0089]第六薄膜晶体管T6，第六薄膜晶体管T6的栅极与扫描线SCAN2连接，第六薄膜晶体管T6的栅极和第五薄膜晶体管T5的栅极与扫描线SCAN2连接的连接点构成连接点N1，第六薄膜晶体管T6的源极与第三MOS管M3的漏极连接，第六薄膜晶体管T6的源极、第三MOS管M3的漏极以及第四薄膜晶体管T4的源极的连接点共同构成连接点N2，第六薄膜晶体管T6的漏极与第三MOS管M3的栅极连接并构成连接点N3。第六薄膜晶体管T6用于控制连接点N2与连接点N3之间的导通。\n\n[0090]第七薄膜晶体管T7，第七薄膜晶体管T7的栅极与扫描线SCAN3连接，第七薄膜晶体管T7的源极与复位电源Vint连接，第七薄膜晶体管T7的漏极与第三储能电容C3的一端连接，第七薄膜晶体管T7的漏极、第三储能电容C3的一端以及第三MOS管M3的栅极的连接点构成连接点N4。第七薄膜晶体管T7用于控制连接点N4处的电压输入，使复位电源Vint作为复位电压提供至连接点N4处。\n\n[0091]第八薄膜晶体管T8，第八薄膜晶体管T8的栅极与扫描线SCAN1连接，第八薄膜晶体管T8的源极与第三正电压VDD连接。第八薄膜晶体管T8与第四薄膜晶体管T4共同作用，用于控制发光器件的电流导通。\n\n[0092]第三储能电容C3，第三储能电容C3的一端与第七薄膜晶体管T7的漏极连接，另一端与第三正电压VDD连接，第三储能电容C3用于储存扫描线SCAN2的扫描信号。\n\n[0093]本实施例中第五薄膜晶体管T5的栅极接收扫描线SCAN2输出的扫描信号Vscan2，第五薄膜晶体管T5导通，将数据线Dm输出的数据信号Vdata提供至第三MOS管M3的源极；\n\n[0094]第四薄膜晶体管T4的栅极和第八薄膜晶体管T8的栅极同时接收扫描线SCAN1输出的扫描信号Vscan1，第四薄膜晶体管T4和第八薄膜晶体管T8导通，第八薄膜晶体管T8的导通控制第三MOS管M3的源极连通于第三正电压VDD，第三MOS管M3的得电，由于第四薄膜晶体管T4也导通，控制第三MOS管M3的漏极连通于发光器件，进而第三MOS管M3允许数据信号Vdata到达发光器件，发光器件发光。\n\n[0095]发光器件发光过程中，由于第三MOS管M3的阈值电压会存在波动，将第三MOS管M3的阈值电压的信息储存在第三储能电容C3中，利用第六薄膜晶体管T6作为驱动模块中的阈值电压补偿晶体管，应用过程中，第六薄膜晶体管T6的栅极接收扫描线SCAN2输出的扫描信号Vscan2，第六薄膜晶体管T6导通，从而控制连接点N2与连接点N3之间的导通，再通过第三储能电容C3实时补偿第三MOS管M3的阈值电压变化，增强发光器件的发光均一性。\n\n[0096]工作过程中，由于第六薄膜晶体管T6存在漏电流，容易导致第三MOS管M3的栅极处的驱动电压发生变化，影响发光器件的稳定性，导致发光器件出现闪烁严重的问题，利用第七薄膜晶体管T7作为第六薄膜晶体管T6的漏电流补偿晶体管，第七薄膜晶体管T7接收到扫描线SCAN3输出的扫描信号Vscan3时，第七薄膜晶体管T7导通，连接点N3处持续保持复位电源Vint提供的复位电压，即有效减少第六薄膜晶体管T6的漏电流对第三MOS管M3的栅极处的驱动电压造成的影响，改善发光器件出现闪烁严重的现象。\n\n[0097]本实例中的第四驱动器件和第八驱动器件，即第四薄膜晶体管T4的栅极和第八薄膜晶体管T8，控制第三MOS管M3导通，调节第三正电压VDD提供的输入电压和复位电源Vint提供的复位电压，使第三MOS管M3的工作电压满足预先设定的条件，此处不再赘述预先设定的条件，在预先设定的条件下，第三MOS管M3工作在第三MOS管M3的线性区，第三MOS管M3的工作电压包括第三MOS管M3的阈值电压Vth、栅极电压Vg、栅-源极节点电压Vgs和源-漏极节点电压Vds。第三MOS管M3工作在第一MOS管的线性区，第三MOS管M3的工作电压包括第三MOS管M3的阈值电压Vth、栅极电压Vg、栅-源极节点电压Vgs和源-漏极节点电压Vds。控制第三MOS管M3在工作于第三MOS管M3的线性区内，当第三MOS管M3工作于线性区内时，第三MOS管M3近似于一个阻值一定的电阻，第三MOS管M3的漏极电流-漏极电压的曲线重合较好，第三MOS管M3输入不同的栅极电压所引起输出电流变化影响较小。\n\n[0098]在一个具体的实施例中，本申请提供了一种背光驱动方法，应用于背光驱动电路中，背光驱动电路包括：包括发光器件和驱动模块，驱动模块包括开关器件和驱动器件，开关器件与发光器件连接，开关器件用于控制发光器件的通断，驱动器件与开关器件连接，驱动器件用于控制开关器件的通断；\n\n[0099]如图5所示，背光驱动方法包括以下步骤201～202：\n\n[0100]201、设置开关MOS管作为开关器件；\n\n[0101]由于发光器件是电流驱动器件，背光信号为电压控制，采用开关MOS管作为控制发光器件电流导通的开关器件，控制更加稳定。\n\n[0102]设置开关MOS管作为开关器件具体包括：根据发光器件的额定电压和额定电流对开关MOS管进行选型，对开关MOS管的工作电压进行测试，开关MOS管的工作电压包括开关MOS管的阈值电压Vth、栅极电压Vg、栅-源极节点电压Vgs和源-漏极节点电压Vds，选择工作电压能够满足预先设定的条件的开关MOS管，将该开关MOS管设置为用于控制发光器件电流导通的开关器件。\n\n[0103]202、通过驱动器件控制开关MOS管的工作电压满足预先设定的条件，在预先设定的条件下，开关MOS管工作在开关MOS管的线性区；\n\n[0104]驱动器件控制开关MOS管的电流导通，通过控制背光驱动电路中的电源电压以及开关MOS管的栅极电压，以控制开关MOS管工作在线性区，使开关MOS管近似于一个阻值一定的电阻，以保持通过发光器件的电流稳定。\n\n[0105]在一个具体的实施例中，通过开关器件控制开关MOS管的工作电压满足预先设定的条件，包括：控制开关MOS管的栅-源极节点电压Vgs大于开关MOS管的阈值电压Vth，且开关MOS管的源-漏极节点电压Vds小于过驱动电压，过驱动电压为开关MOS管的栅-源极节点电压Vgs与开关MOS管的阈值电压Vth的电压差值。\n\n[0106]具体应用中，将开关MOS管的栅极接入的电压足够大，即开关MOS管的栅极电压Vg足够大，再根据开关MOS管的电特性选择合适的电压电源作为驱动电路中的驱动电源，以得到合适的源-漏极节点电压Vds，最终控制开关MOS管的栅-源极节点电压Vgs大于开关MOS管的阈值电压Vth，并控制开关MOS管的源-漏极节点电压Vds小于过驱动电压Vod。\n\n[0107]在一个具体的实施例中，通过开关器件控制开关MOS管的工作电压满足预先设定的条件，包括：设定开关MOS管的栅极电压Vg设定于4～6V，且控制开关MOS管的阈值电压Vth满足以下条件：开关MOS管的阈值电压Vth浮动1V时，开关MOS管的漏极处的电阻变化值小于1％，电阻变化值为(R1-R2)/R1，其中，R1为开关MOS管在开关MOS管的阈值电压Vth浮动前的电阻，R2为开关MOS管在开关MOS管的阈值电压Vth浮动后的电阻。\n\n[0108]在一个具体的实施例中，本申请提供了一种背光模组，背光模组包括基板，基板上搭载有驱动电路，驱动电路采用的是背光驱动电路，背光驱动电路包括发光器件和驱动模块，驱动模块包括开关器件和驱动器件，开关器件与发光器件连接，开关器件用于控制发光器件的通断，驱动器件与开关器件连接，驱动器件用于控制开关器件的通断；\n\n[0109]开关器件包括开关MOS管，驱动器件用于控制开关MOS管的工作电压满足预先设定的条件，在预先设定的条件下，开关MOS管工作在开关MOS管的线性区，开关MOS管的工作电压包括开关MOS管的阈值电压Vth、栅极电压Vg、栅-源极节点电压Vgs和源-漏极节点电压Vds。\n\n[0110]以上背光驱动电路的具体实施可参见前面的实施例，在此不再赘述。\n\n[0111]以上对本申请实施例所提供的一种背光驱动电路、驱动方法及背光模组进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10928, 23982, '技术领域\n\n[0001]本发明涉及车载显示技术领域，具体涉及一种背光模组、一种车载显示面板及一种车辆。\n\n背景技术\n\n[0002]利用液晶显示面板作为车载显示面板以显示时速、油耗等信息，成为车载显示技术发展的主流。但由于液晶显示面板需搭配背光源才能实现显示，若背光源出现故障，就会引起车载显示面板出现全屏黑屏的问题，威胁驾驶员的行车安全。\n\n发明内容\n\n[0003]本发明实施例提供一种背光模组、一种车载显示面板及一种车辆，可以改善背光模组的容错性。\n\n[0004]本发明的实施例提供一种背光模组，包括：第一背光模组和第二背光模组。所述第一背光模组设有开口，所述第二背光模组安装于所述开口内。其中，所述第一背光模组与所述第二背光模组的类型不同。\n\n[0005]可选地，在本发明的一些实施例中，所述第一背光模组为直下式背光模组或侧入式背光模组的其中一者，所述第二背光模组为直下式背光模组或侧入式背光模组的其中另一者。\n\n[0006]可选地，在本发明的一些实施例中，所述直下式背光模组为分区控制的背光模组。\n\n[0007]可选地，在本发明的一些实施例中，所述第一背光模组包括第一背板，所述第二背光模组包括第二背板；其中，所述开口设置于所述第一背板上，所述第二背板可拆卸地安装于所述开口内。\n\n[0008]可选地，在本发明的一些实施例中，所述第一背板包括第一主体部、第二主体部和延伸板，所述第二主体部位于所述第一主体部和所述延伸板之间，所述第一主体部和所述延伸板分别与所述延伸板垂直相接；所述第一主体部、所述第二主体部及所述延伸板环绕所述开口，所述第二背光模组还包括第二胶框，所述第二胶框固定于所述第二背板外侧并可拆卸地安装于所述开口内。\n\n[0009]可选地，在本发明的一些实施例中，所述第一背光模组包括第一胶框，所述第一胶框包括第一连接部和第一支撑部，所述第一连接部固定于所述第一主体部的外侧，所述第一支撑部自所述第一连接部的远离所述第二主体部的一端朝向所述第一背板的中心延伸而出；所述第二胶框包括第二连接部和第二支撑部，所述第二连接部固定于所述第二背板外侧并可拆卸地安装于所述开口内，所述第二支撑部自所述第二连接部的远离所述第二主体部的一端朝向所述第二背板的中心延伸而出。\n\n[0010]可选地，在本发明的一些实施例中，所述第一支撑部远离所述第一背板的一侧表面和所述第二支撑部远离所述第二背板的一侧表面位于同一水平面。\n\n[0011]可选地，在本发明的一些实施例中，所述第一背光模组还包括位于所述第一背板上的第一光源，以及位于所述第一光源上的扩散板；所述第二背光模组还包括位于所述第二背板上的一侧的第二光源，以及位于所述第二背板上的导光板，所述导光板的侧部正对所述第二光源。\n\n[0012]可选地，在本发明的一些实施例中，所述第一光源包括次毫米发光二极管或微型发光二极管。\n\n[0013]可选地，在本发明的一些实施例中，所述第一背板的导热系数大于所述第二背板的导热系数。\n\n[0014]本发明的实施例还提供一种车载显示面板，包括上述任一所述背光模组及面板主体；所述面板主体包括第一显示部和第二显示部，所述第一显示部位于所述第一背光模组的上方，所述第二显示部位于所述第二背光模组的上方。\n\n[0015]可选地，在本发明的一些实施例中，所述第一背光模组包括第一背板和第一胶框；所述第一背板包括第一主体部、第二主体部和延伸板，所述第二主体部位于所述第一主体部和所述延伸板之间，所述第一主体部和所述延伸板分别与所述延伸板垂直相接；所述第一胶框包括第一连接部和第一支撑部，所述第一连接部固定于所述第一主体部的外侧，所述第一支撑部自所述第一连接部的远离所述第二主体部的一端朝向所述第一背板的中心延伸而出。\n\n[0016]所述第二背光模组包括第二背板和第二胶框，所述第二胶框包括第二连接部和第二支撑部，所述第二连接部固定于所述第二背板外侧，所述第二支撑部自所述第二连接部的远离所述第二主体部的一端朝向所述第二背板的中心延伸而出；其中，所述面板主体安装于所述第一支撑部和所述第二支撑部上。\n\n[0017]可选地，在本发明的一些实施例中，所述车载显示面板还包括泡棉胶，所述泡棉胶位于所述面板主体与所述第一支撑部之间，以及，位于所述面板主体与所述第二支撑部之间。\n\n[0018]本发明的实施例还提供一种车辆，包括任一上述的背光模组或任一上述的车载显示面板。\n\n[0019]在本发明的实施例提供的背光模组、车载显示面板及车辆中，所述背光模组包括：第一背光模组和第二背光模组。所述第一背光模组设有开口，所述第二背光模组安装于所述开口内。其中，所述第一背光模组与所述第二背光模组的类型不同，以使所述第一背光模组与所述第二背光模组可实现单独发光，从而使所述第一背光模组与所述第二背光模组的其中一者出现故障时，利用所述第一背光模组与所述第二背光模组中的另一者使所述背光模组仍具有提供背光的功能，改善所述背光模组的容错性。\n\n附图说明\n\n[0020]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0021]图1A～图1E是本发明实施例提供的背光模组的结构示意图；\n\n[0022]图2A～图2B是本发明实施例提供的第一背光模组和第二背光模组的安装结构示意图；\n\n[0023]图3A～图3B是本发明实施例提供的车载显示面板的结构示意图；\n\n[0024]图4是本发明实施例提供的面板主体的结构示意图。\n\n具体实施方式\n\n[0025]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本发明，并不用于限制本发明。在本发明中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0026]具体地，请参阅图1A～图1E是本发明实施例提供的背光模组的结构示意图；本发明的实施例提供一种背光模组，所述背光模组包括第一背光模组101和第二背光模组102。\n\n[0027]所述第一背光模组101上设有开口101a。可选地，所述第一背光模组101上设置的所述开口101a的数量不限于一个；在俯视视角下，所述开口101a的形状不限于圆形、多边形、椭圆形等形状。\n\n[0028]所述第二背光模组102安装于所述开口101a内，以使所述第二背光模组102嵌套于所述第一背光模组101内。\n\n[0029]其中，所述第一背光模组101与所述第二背光模组102可独立发光，以在所述第一背光模组101或所述第二背光模组102中的一者出现故障时，通过所述第一背光模组101或所述第二背光模组102中的另一者使所述背光模组仍可以实现提供背光的功能，从而提高所述背光模组的容错性。\n\n[0030]进一步地，所述第一背光模组101与所述第二背光模组102的类型不同，以使所述第一背光模组101与所述第二背光模组102可按照不同的背光控制类型实现单独发光，提高所述背光模组的容错性。\n\n[0031]可选地，所述第一背光模组101为直下式背光模组或侧入式背光模组的其中一者，所述第二背光模组102为直下式背光模组或侧入式背光模组的其中另一者。\n\n[0032]可选地，所述直下式背光模组可为采用分区控制的背光模组，或为采用整体控制的背光模组。\n\n[0033]进一步地，以所述第一背光模组101为直下式背光模组，且所述直下式背光模组为采用分区控制的背光模组，所述第二背光模组102为侧入式背光模组为例对所述背光模组的具体结构进行说明。\n\n[0034]具体地，所述第一背光模组101包括第一背板1011、第一光源1012及扩散板1013，所述第二背光模组102包括第二背板1021、第二光源1022及导光板1023。\n\n[0035]其中，所述开口101a设置于所述第一背板1011上，所述第二背板1021可拆卸地安装于所述开口101a内，从而使所述第一背光模组101与所述第二背光模组102实现可拆卸安装。\n\n[0036]具体地，所述第一背板1011包括主体1011a和延伸板1011b，所述延伸板1011b自所述主体1011a的中部的一侧朝向远离所述主体1011a的方向延伸，以使所述主体1011a和所述延伸板1011b均环绕所述开口101a。可选地，在俯视视角下，所述开口101a的设置位置不限于所述第一背板1011的中部。\n\n[0037]其中，所述主体1011a包括第一主体部1011c和第二主体部1011d，所述第二主体部1011d位于所述第一主体部1011c与所述延伸板1011b之间，所述第一主体部1011c与所述第二主体部1011d垂直相接，所述延伸板1011b与所述第二主体部1011d垂直相接，以通过所述第二主体部1011d连接所述第一主体部1011c和所述延伸板1011b。所述第一光源1012位于所述第一背板1011的所述第二主体部1011d上，所述扩散板1013位于所述第一光源1012远离所述第二主体部1011d的一侧，且所述扩散板1013环绕所述延伸板1011b，以使所述第一光源1012配合局部调光功能，使所述第一背光模组101内的多个所述第一光源1012的发光强度均可调，以实现对所述第一背光模组101中多个所述第一光源1012的分区控制，从而使所述第一背光模组101为采用分区控制的背光模组。可选地，所述扩散板1013可通过支撑块1025固定于所述第一光源1012上，以使所述第一光源1012与所述扩散板1013之间具有一定的间隔，从而使多个所述第一光源1012发出的光可照射至所述扩散板1013的各区域。其中，所述支撑块1025可通过双面胶安装于所述主体1011a上。\n\n[0038]所述第二光源1022位于所述第二背板1021的一侧，所述导光板1023位于所述第二背板1021上，且所述导光板1023的侧部正对所述第二光源1022，对所述第二背光模组102内的多个所述第二光源1022的发光强度进行同时控制，且多个所述第二光源1022发出的光经所述导光板1023均匀化后输出，实现对所述第二背光模组102中多个所述第二光源1022的整体控制，从而使所述第二背光模组102为采用整体控制的背光模组。\n\n[0039]可选地，所述第一光源1012和/或所述第二光源1022包括次毫米发光二极管或微型发光二极管；所述第一背光模组101中包括的所述第一光源1012的数量大于所述第二背光模组102中包括的所述第二光源1022的数量，所述第一光源1012通过导热胶安装于所述主体1011a上，所述第二光源1022通过导热胶安装于所述第二背板1021的一侧。进一步地，所述第一背板1011的导热系数大于所述第二背板1021的导热系数，以使所述第一背板1011具有较好的散热性能。进一步地，所述第一背板1011的结构强度大于所述第二背板1021的结构强度。可选地，基于成本及制程难度方面考量，所述第一背板1011为铸铝件；所述第二背板1021为钣金件或铸铝件。可以理解的，所述第一光源1012、所述第二光源1022的数量可根据实际需求设置，在此不再进行赘述。\n\n[0040]进一步地，所述背光模组还包括光学层103，所述光学层103位于所述导光板1023远离所述第二背板1021的一侧，以及，位于所述扩散板1013远离所述第一光源1012的一侧。\n\n[0041]如图2A～图2B所示是本发明的实施例提供的第一背板与第二背板的结构示意图，所述延伸板1011b靠近所述开口101a的一侧设置有第一卡接部1001，所述第二背板1021的外侧设置有第二卡接部1002，所述第一卡接部1001和所述第二卡接部1002相互配合，以使所述第二背板1021可拆卸地安装于所述开口101a内。\n\n[0042]可选地，所述第一卡接部1001为凹槽，所述第二卡接部1002为凸起，以使所述第二卡接部1002卡入所述第一卡接部1001内，如图2A所示；或，所述第一卡接部1001为凸起，所述第二卡接部1002为凹槽，所述第一卡接部1001卡入所述第二卡接部1002内；或，所述第一卡接部1001与所述第二卡接部1002采用卡扣结构设计，如图2B所示，所述第一卡接部1001贯穿所述延伸板1011b，所述第二卡接部1002包括引导部和定位部，所述引导部用于引导所述定位部顺利安装于所述延伸板1011b远离所述第二背板1021的一侧1011e，在所述第二背板1021安装于所述开口101a内时，所述定位部安装于所述延伸板1011b远离所述第二背板1021的一侧1011e。可以理解的，在俯视视角下，所述开口101a为圆形时，所述第一卡接部1001与所述第二卡接部1002还可采用螺纹连接设计。具体地，所述第二背板1021的外侧设置有外螺纹，所述延伸板1011b靠近所述开口101a的一侧设置有与所述外螺纹相配合的内螺纹，即所述第一卡接部1001设置为外螺纹的形式，所述第二卡接部1002设置为内螺纹的形式。\n\n[0043]可以理解的，所述第一卡接部1001与所述第二卡接部1002采用卡扣结构的设计不限于图2B所示的形式。可选地，所述第二卡接部1002具有第一凸起高度h1，所述第一凸起高度h1等于1.5mm，以避免所述第二背板1021可拆卸地安装于所述开口101a内时，所述第二背板1021出现不可逆变形，损伤所述第二背板1021。\n\n[0044]可选地，所述第一背板1011上可设有多个所述第一卡接部1001，相应地，所述第二背板1021外侧设有多个所述第二卡接部1002，以保证所述第二背板1021安装于所述开口101a内时，所述第二背板1021不会与所述第一背板1011发生脱离，提高安装的可靠性。\n\n[0045]进一步地，为避免在所述第二背板1021可拆卸地安装于所述开口101a内时，损伤所述第二背板1021，所述第二背光模组102还包括第二胶框1024，所述第二胶框1024固定于所述第二背板1021外侧，并可拆卸地安装于所述开口101a内，以实现所述第二背板1021的可拆卸安装。在安装时，所述第二胶框1024发生微变形，直至所述第二卡接部1002与所述第一卡接部1001对准时，所述第二胶框1024的微变形消失，所述第二胶框1024被安装至所述开口101a内。\n\n[0046]更进一步地，所述第二卡接部1002设置于所述第二胶框1024远离所述第二背板1021的一侧，所述第二光源1022位于所述第二背板1021远离所述第二胶框1024的一侧。\n\n[0047]可选地，所述第二胶框1024为注塑件，所述第二胶框1024的制备材料包括热塑性树脂。进一步地，所述第二胶框1024的制备材料包括聚碳酸酯。\n\n[0048]请继续参阅图1C，所述第一背光模组101还包括第一胶框1014，所述第一胶框1014包括第一连接部1003和第一支撑部1004，所述第一连接部1003位于所述主体1011a外侧，即所述第一连接部1003位于所述第一主体部1011c外侧。所述第一支撑部1004自所述第一连接部1003的远离所述主体1011a的一端朝向所述第一背板1011的中心延伸而出，即所述第一支撑部1004自所述第一连接部1003的远离所述第二主体部1011d的一端朝向所述延伸板1011b的一侧延伸而出。所述第二胶框1024包括第二连接部1005和第二支撑部1006，所述第二连接部1005固定于所述第二背板1021外侧并可拆卸地安装于所述开口101a内，所述第二支撑部1006自所述第二连接部1005的远离所述第二主体部1011d的一端朝向所述第二背板1021的中心延伸而出，所述第一支撑部1004远离所述第一背板1011的一侧表面1004a和所述第二支撑部1006远离所述第二背板1021的一侧表面1006a位于同一水平面，以为后续安装面板主体提供支撑。\n\n[0049]此外，所述第一背光模组101还可为侧入式背光模组，所述第二背光模组102为采用整体控制或分区控制的直下式背光模组，在此不再进行赘述。可以理解的，所述第一背光模组101与所述第二背光模组102实现单独发光的方式不限于通过所述第一背光模组101和所述第二背光模组102的类型不同实现。在所述第一背光模组101和所述第二背光模组102的类型相同的情况下，还可通过设置不同的控制电路或不同的控制类型实现，在此不再进行赘述。其中，所述第一背光模组101和所述第二背光模组102的类型相同包括以下情况：所述第一背光模组101可为采用分区控制的直下式背光模组，所述第二背光模组102为采用整体控制或分区控制的直下式背光模组；或，所述第一背光模组101为采用整体控制的直下式背光模组，所述第二背光模组102为采用整体控制或分区控制的直下式背光模组；或，所述第一背光模组101与所述第二背光模组102均为侧入式背光模组。\n\n[0050]本发明的实施例还提供一种车载显示面板，所述车载显示面板包括任一上述的背光模组。\n\n[0051]如图3A～图3B是本发明实施例提供的车载显示面板的结构示意图。本发明的实施例还提供一种车载显示面板，所述车载显示面板包括上述的背光模组及面板主体300。\n\n[0052]所述面板主体300包括第一显示部300a和第二显示部300b，所述第一显示部300a位于所述背光模组的所述第一背光模组101的上方，所述第二显示部300b位于所述背光模组的所述第二背光模组102上方。\n\n[0053]其中，由于所述第一背光模组101和所述第二背光模组102可分别独立为所述第一显示部300a和所述第二显示部300b提供背光，因此在所述第一背光模组101或所述第二背光模组102中的一者出现故障时，可利用所述第一背光模组101或所述第二背光模组102中的另一者配合所述面板主体300保证所述车载显示面板仍具有一定的显示功能。\n\n[0054]具体地，所述面板主体300安装于所述第一支撑部1004远离所述第一背板1011的一侧表面1004a和所述第二支撑部1006远离所述第二背板1021的一侧表面1006a上，以通过所述第一支撑部1004、所述第二支撑部1006为所述面板主体300提供支撑。\n\n[0055]进一步地，所述车载显示面板还包括泡棉胶301，所述泡棉胶301位于所述面板主体300与所述第一支撑部1004之间，以及位于所述面板主体300与所述第二支撑部1006之间。\n\n[0056]进一步地，在所述第一背光模组101为分区控制的背光模组，所述第二背光模组102为采用整体控制的背光模组时，所述第一显示部300a相较于所述第二显示部300b具有更高的对比度，在外部环境光线较强的情况下，所述第一显示部300a的显示的内容较所述第二显示部300b的显示的内容更清晰。可选地，所述第一显示部300a用于显示车速、里程等信息，所述第二显示部300b可用于固定显示胎压、油耗等信息。其中，所述第一显示部300a的显示内容可根据实际需求进行调整，在此不再进行赘述。\n\n[0057]更进一步地，为具有相同显示面积的所述面板主体300提供背光时，所述第一背光模组101所包括的所述第一光源1012的数量会大于所述第二背光模组102所包括的所述第二光源1022的数量，由此会致使所述背光模组的制造成本增大。但所述第一背光模组101所包括的所述第一光源1012的数量越多，所述第一显示部300a的显示画质越细腻。因此为兼顾制造成本及显示效果，所述第二显示部300b的显示尺寸小于或等于所述车载显示面板的显示尺寸的0.5倍。如所述车载显示面板的显示尺寸为12.3英寸时，所述第二显示部300b的显示尺寸为4.2英寸或3.5英寸；所述车载显示面板的显示尺寸为26.3英寸时，所述第二显示部300b的显示尺寸为7英寸或8英寸。可选地，在俯视视角下，所述开口101a的设置位置不限于所述第一背板1011的中部。可以理解的，所述开口101a的数量不限于一个。具体地，所述开口101a还可以包括第一开口、第二开口等，所述第二背光模组102包括安装所述第一开口内的第一子背光模组、安装于所述第二开口内的第二子背光模组等，所述第二显示部300b包括位于所述第一子背光模组上方的第一子显示部、位于所述第二子背光模组上方的第二子显示部等。其中，所述第一子背光模组、所述第二子背光模组等中的至少一个采用的背光控制类型与所述第一背光模组101采用的背光控制类型不同。进一步地，所述第一子背光模组、所述第二子背光模组等中的至少一个与所述第一背光模组101的类型不同，在此不再进行赘述。\n\n[0058]如图4是本发明实施例提供的面板主体的结构示意图，所述面板主体300包括阵列基板302、彩膜基板303、偏光片304及位于所述阵列基板302与所述彩膜基板303之间的框胶305和液晶306。可选地，所述液晶306包括正性液晶、负性液晶。进一步地，所述面板主体300还包括公共电极、像素电极、触控电极、配向层、彩膜层等未示出部分。\n\n[0059]本发明的实施例还提供一种车辆，所述车辆包括任一上述的车载显示面板，通过所述第一背光模组、所述第二背光模组配合所述面板主体实现显示。在所述第一背光模组或所述第二背光模组中的一者出现故障时，利用所述第一背光模组或所述第二背光模组中的另一者配合所述面板主体保证所述车载显示面板仍具有一定的显示功能，可有利于提高所述背光模组的容错性，提高所述车载显示面板的可靠性和稳定性，有利于保证行车安全。\n\n[0060]可选地，所述车载显示面板可用作中控显示、仪表显示、后视镜显示、抬头显示等。\n\n[0061]本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。', '技术领域\n\n[0001]本发明涉及车载显示技术领域，具体涉及一种背光模组、一种车载显示面板及一种车辆。\n\n背景技术\n\n[0002]利用液晶显示面板作为车载显示面板以显示时速、油耗等信息，成为车载显示技术发展的主流。但由于液晶显示面板需搭配背光源才能实现显示，若背光源出现故障，就会引起车载显示面板出现全屏黑屏的问题，威胁驾驶员的行车安全。\n\n发明内容\n\n[0003]本发明实施例提供一种背光模组、一种车载显示面板及一种车辆，可以改善背光模组的容错性。\n\n[0004]本发明的实施例提供一种背光模组，包括：第一背光模组和第二背光模组。所述第一背光模组设有开口，所述第二背光模组安装于所述开口内。其中，所述第一背光模组与所述第二背光模组的类型不同。\n\n[0005]可选地，在本发明的一些实施例中，所述第一背光模组为直下式背光模组或侧入式背光模组的其中一者，所述第二背光模组为直下式背光模组或侧入式背光模组的其中另一者。\n\n[0006]可选地，在本发明的一些实施例中，所述直下式背光模组为分区控制的背光模组。\n\n[0007]可选地，在本发明的一些实施例中，所述第一背光模组包括第一背板，所述第二背光模组包括第二背板；其中，所述开口设置于所述第一背板上，所述第二背板可拆卸地安装于所述开口内。\n\n[0008]可选地，在本发明的一些实施例中，所述第一背板包括第一主体部、第二主体部和延伸板，所述第二主体部位于所述第一主体部和所述延伸板之间，所述第一主体部和所述延伸板分别与所述延伸板垂直相接；所述第一主体部、所述第二主体部及所述延伸板环绕所述开口，所述第二背光模组还包括第二胶框，所述第二胶框固定于所述第二背板外侧并可拆卸地安装于所述开口内。\n\n[0009]可选地，在本发明的一些实施例中，所述第一背光模组包括第一胶框，所述第一胶框包括第一连接部和第一支撑部，所述第一连接部固定于所述第一主体部的外侧，所述第一支撑部自所述第一连接部的远离所述第二主体部的一端朝向所述第一背板的中心延伸而出；所述第二胶框包括第二连接部和第二支撑部，所述第二连接部固定于所述第二背板外侧并可拆卸地安装于所述开口内，所述第二支撑部自所述第二连接部的远离所述第二主体部的一端朝向所述第二背板的中心延伸而出。\n\n[0010]可选地，在本发明的一些实施例中，所述第一支撑部远离所述第一背板的一侧表面和所述第二支撑部远离所述第二背板的一侧表面位于同一水平面。\n\n[0011]可选地，在本发明的一些实施例中，所述第一背光模组还包括位于所述第一背板上的第一光源，以及位于所述第一光源上的扩散板；所述第二背光模组还包括位于所述第二背板上的一侧的第二光源，以及位于所述第二背板上的导光板，所述导光板的侧部正对所述第二光源。\n\n[0012]可选地，在本发明的一些实施例中，所述第一光源包括次毫米发光二极管或微型发光二极管。\n\n[0013]可选地，在本发明的一些实施例中，所述第一背板的导热系数大于所述第二背板的导热系数。\n\n[0014]本发明的实施例还提供一种车载显示面板，包括上述任一所述背光模组及面板主体；所述面板主体包括第一显示部和第二显示部，所述第一显示部位于所述第一背光模组的上方，所述第二显示部位于所述第二背光模组的上方。\n\n[0015]可选地，在本发明的一些实施例中，所述第一背光模组包括第一背板和第一胶框；所述第一背板包括第一主体部、第二主体部和延伸板，所述第二主体部位于所述第一主体部和所述延伸板之间，所述第一主体部和所述延伸板分别与所述延伸板垂直相接；所述第一胶框包括第一连接部和第一支撑部，所述第一连接部固定于所述第一主体部的外侧，所述第一支撑部自所述第一连接部的远离所述第二主体部的一端朝向所述第一背板的中心延伸而出。\n\n[0016]所述第二背光模组包括第二背板和第二胶框，所述第二胶框包括第二连接部和第二支撑部，所述第二连接部固定于所述第二背板外侧，所述第二支撑部自所述第二连接部的远离所述第二主体部的一端朝向所述第二背板的中心延伸而出；其中，所述面板主体安装于所述第一支撑部和所述第二支撑部上。\n\n[0017]可选地，在本发明的一些实施例中，所述车载显示面板还包括泡棉胶，所述泡棉胶位于所述面板主体与所述第一支撑部之间，以及，位于所述面板主体与所述第二支撑部之间。\n\n[0018]本发明的实施例还提供一种车辆，包括任一上述的背光模组或任一上述的车载显示面板。\n\n[0019]在本发明的实施例提供的背光模组、车载显示面板及车辆中，所述背光模组包括：第一背光模组和第二背光模组。所述第一背光模组设有开口，所述第二背光模组安装于所述开口内。其中，所述第一背光模组与所述第二背光模组的类型不同，以使所述第一背光模组与所述第二背光模组可实现单独发光，从而使所述第一背光模组与所述第二背光模组的其中一者出现故障时，利用所述第一背光模组与所述第二背光模组中的另一者使所述背光模组仍具有提供背光的功能，改善所述背光模组的容错性。\n\n附图说明\n\n[0020]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0021]图1A～图1E是本发明实施例提供的背光模组的结构示意图；\n\n[0022]图2A～图2B是本发明实施例提供的第一背光模组和第二背光模组的安装结构示意图；\n\n[0023]图3A～图3B是本发明实施例提供的车载显示面板的结构示意图；\n\n[0024]图4是本发明实施例提供的面板主体的结构示意图。\n\n具体实施方式\n\n[0025]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本发明，并不用于限制本发明。在本发明中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0026]具体地，请参阅图1A～图1E是本发明实施例提供的背光模组的结构示意图；本发明的实施例提供一种背光模组，所述背光模组包括第一背光模组101和第二背光模组102。\n\n[0027]所述第一背光模组101上设有开口101a。可选地，所述第一背光模组101上设置的所述开口101a的数量不限于一个；在俯视视角下，所述开口101a的形状不限于圆形、多边形、椭圆形等形状。\n\n[0028]所述第二背光模组102安装于所述开口101a内，以使所述第二背光模组102嵌套于所述第一背光模组101内。\n\n[0029]其中，所述第一背光模组101与所述第二背光模组102可独立发光，以在所述第一背光模组101或所述第二背光模组102中的一者出现故障时，通过所述第一背光模组101或所述第二背光模组102中的另一者使所述背光模组仍可以实现提供背光的功能，从而提高所述背光模组的容错性。\n\n[0030]进一步地，所述第一背光模组101与所述第二背光模组102的类型不同，以使所述第一背光模组101与所述第二背光模组102可按照不同的背光控制类型实现单独发光，提高所述背光模组的容错性。\n\n[0031]可选地，所述第一背光模组101为直下式背光模组或侧入式背光模组的其中一者，所述第二背光模组102为直下式背光模组或侧入式背光模组的其中另一者。\n\n[0032]可选地，所述直下式背光模组可为采用分区控制的背光模组，或为采用整体控制的背光模组。\n\n[0033]进一步地，以所述第一背光模组101为直下式背光模组，且所述直下式背光模组为采用分区控制的背光模组，所述第二背光模组102为侧入式背光模组为例对所述背光模组的具体结构进行说明。\n\n[0034]具体地，所述第一背光模组101包括第一背板1011、第一光源1012及扩散板1013，所述第二背光模组102包括第二背板1021、第二光源1022及导光板1023。\n\n[0035]其中，所述开口101a设置于所述第一背板1011上，所述第二背板1021可拆卸地安装于所述开口101a内，从而使所述第一背光模组101与所述第二背光模组102实现可拆卸安装。\n\n[0036]具体地，所述第一背板1011包括主体1011a和延伸板1011b，所述延伸板1011b自所述主体1011a的中部的一侧朝向远离所述主体1011a的方向延伸，以使所述主体1011a和所述延伸板1011b均环绕所述开口101a。可选地，在俯视视角下，所述开口101a的设置位置不限于所述第一背板1011的中部。\n\n[0037]其中，所述主体1011a包括第一主体部1011c和第二主体部1011d，所述第二主体部1011d位于所述第一主体部1011c与所述延伸板1011b之间，所述第一主体部1011c与所述第二主体部1011d垂直相接，所述延伸板1011b与所述第二主体部1011d垂直相接，以通过所述第二主体部1011d连接所述第一主体部1011c和所述延伸板1011b。所述第一光源1012位于所述第一背板1011的所述第二主体部1011d上，所述扩散板1013位于所述第一光源1012远离所述第二主体部1011d的一侧，且所述扩散板1013环绕所述延伸板1011b，以使所述第一光源1012配合局部调光功能，使所述第一背光模组101内的多个所述第一光源1012的发光强度均可调，以实现对所述第一背光模组101中多个所述第一光源1012的分区控制，从而使所述第一背光模组101为采用分区控制的背光模组。可选地，所述扩散板1013可通过支撑块1025固定于所述第一光源1012上，以使所述第一光源1012与所述扩散板1013之间具有一定的间隔，从而使多个所述第一光源1012发出的光可照射至所述扩散板1013的各区域。其中，所述支撑块1025可通过双面胶安装于所述主体1011a上。\n\n[0038]所述第二光源1022位于所述第二背板1021的一侧，所述导光板1023位于所述第二背板1021上，且所述导光板1023的侧部正对所述第二光源1022，对所述第二背光模组102内的多个所述第二光源1022的发光强度进行同时控制，且多个所述第二光源1022发出的光经所述导光板1023均匀化后输出，实现对所述第二背光模组102中多个所述第二光源1022的整体控制，从而使所述第二背光模组102为采用整体控制的背光模组。\n\n[0039]可选地，所述第一光源1012和/或所述第二光源1022包括次毫米发光二极管或微型发光二极管；所述第一背光模组101中包括的所述第一光源1012的数量大于所述第二背光模组102中包括的所述第二光源1022的数量，所述第一光源1012通过导热胶安装于所述主体1011a上，所述第二光源1022通过导热胶安装于所述第二背板1021的一侧。进一步地，所述第一背板1011的导热系数大于所述第二背板1021的导热系数，以使所述第一背板1011具有较好的散热性能。进一步地，所述第一背板1011的结构强度大于所述第二背板1021的结构强度。可选地，基于成本及制程难度方面考量，所述第一背板1011为铸铝件；所述第二背板1021为钣金件或铸铝件。可以理解的，所述第一光源1012、所述第二光源1022的数量可根据实际需求设置，在此不再进行赘述。\n\n[0040]进一步地，所述背光模组还包括光学层103，所述光学层103位于所述导光板1023远离所述第二背板1021的一侧，以及，位于所述扩散板1013远离所述第一光源1012的一侧。\n\n[0041]如图2A～图2B所示是本发明的实施例提供的第一背板与第二背板的结构示意图，所述延伸板1011b靠近所述开口101a的一侧设置有第一卡接部1001，所述第二背板1021的外侧设置有第二卡接部1002，所述第一卡接部1001和所述第二卡接部1002相互配合，以使所述第二背板1021可拆卸地安装于所述开口101a内。\n\n[0042]可选地，所述第一卡接部1001为凹槽，所述第二卡接部1002为凸起，以使所述第二卡接部1002卡入所述第一卡接部1001内，如图2A所示；或，所述第一卡接部1001为凸起，所述第二卡接部1002为凹槽，所述第一卡接部1001卡入所述第二卡接部1002内；或，所述第一卡接部1001与所述第二卡接部1002采用卡扣结构设计，如图2B所示，所述第一卡接部1001贯穿所述延伸板1011b，所述第二卡接部1002包括引导部和定位部，所述引导部用于引导所述定位部顺利安装于所述延伸板1011b远离所述第二背板1021的一侧1011e，在所述第二背板1021安装于所述开口101a内时，所述定位部安装于所述延伸板1011b远离所述第二背板1021的一侧1011e。可以理解的，在俯视视角下，所述开口101a为圆形时，所述第一卡接部1001与所述第二卡接部1002还可采用螺纹连接设计。具体地，所述第二背板1021的外侧设置有外螺纹，所述延伸板1011b靠近所述开口101a的一侧设置有与所述外螺纹相配合的内螺纹，即所述第一卡接部1001设置为外螺纹的形式，所述第二卡接部1002设置为内螺纹的形式。\n\n[0043]可以理解的，所述第一卡接部1001与所述第二卡接部1002采用卡扣结构的设计不限于图2B所示的形式。可选地，所述第二卡接部1002具有第一凸起高度h1，所述第一凸起高度h1等于1.5mm，以避免所述第二背板1021可拆卸地安装于所述开口101a内时，所述第二背板1021出现不可逆变形，损伤所述第二背板1021。\n\n[0044]可选地，所述第一背板1011上可设有多个所述第一卡接部1001，相应地，所述第二背板1021外侧设有多个所述第二卡接部1002，以保证所述第二背板1021安装于所述开口101a内时，所述第二背板1021不会与所述第一背板1011发生脱离，提高安装的可靠性。\n\n[0045]进一步地，为避免在所述第二背板1021可拆卸地安装于所述开口101a内时，损伤所述第二背板1021，所述第二背光模组102还包括第二胶框1024，所述第二胶框1024固定于所述第二背板1021外侧，并可拆卸地安装于所述开口101a内，以实现所述第二背板1021的可拆卸安装。在安装时，所述第二胶框1024发生微变形，直至所述第二卡接部1002与所述第一卡接部1001对准时，所述第二胶框1024的微变形消失，所述第二胶框1024被安装至所述开口101a内。\n\n[0046]更进一步地，所述第二卡接部1002设置于所述第二胶框1024远离所述第二背板1021的一侧，所述第二光源1022位于所述第二背板1021远离所述第二胶框1024的一侧。\n\n[0047]可选地，所述第二胶框1024为注塑件，所述第二胶框1024的制备材料包括热塑性树脂。进一步地，所述第二胶框1024的制备材料包括聚碳酸酯。\n\n[0048]请继续参阅图1C，所述第一背光模组101还包括第一胶框1014，所述第一胶框1014包括第一连接部1003和第一支撑部1004，所述第一连接部1003位于所述主体1011a外侧，即所述第一连接部1003位于所述第一主体部1011c外侧。所述第一支撑部1004自所述第一连接部1003的远离所述主体1011a的一端朝向所述第一背板1011的中心延伸而出，即所述第一支撑部1004自所述第一连接部1003的远离所述第二主体部1011d的一端朝向所述延伸板1011b的一侧延伸而出。所述第二胶框1024包括第二连接部1005和第二支撑部1006，所述第二连接部1005固定于所述第二背板1021外侧并可拆卸地安装于所述开口101a内，所述第二支撑部1006自所述第二连接部1005的远离所述第二主体部1011d的一端朝向所述第二背板1021的中心延伸而出，所述第一支撑部1004远离所述第一背板1011的一侧表面1004a和所述第二支撑部1006远离所述第二背板1021的一侧表面1006a位于同一水平面，以为后续安装面板主体提供支撑。\n\n[0049]此外，所述第一背光模组101还可为侧入式背光模组，所述第二背光模组102为采用整体控制或分区控制的直下式背光模组，在此不再进行赘述。可以理解的，所述第一背光模组101与所述第二背光模组102实现单独发光的方式不限于通过所述第一背光模组101和所述第二背光模组102的类型不同实现。在所述第一背光模组101和所述第二背光模组102的类型相同的情况下，还可通过设置不同的控制电路或不同的控制类型实现，在此不再进行赘述。其中，所述第一背光模组101和所述第二背光模组102的类型相同包括以下情况：所述第一背光模组101可为采用分区控制的直下式背光模组，所述第二背光模组102为采用整体控制或分区控制的直下式背光模组；或，所述第一背光模组101为采用整体控制的直下式背光模组，所述第二背光模组102为采用整体控制或分区控制的直下式背光模组；或，所述第一背光模组101与所述第二背光模组102均为侧入式背光模组。\n\n[0050]本发明的实施例还提供一种车载显示面板，所述车载显示面板包括任一上述的背光模组。\n\n[0051]如图3A～图3B是本发明实施例提供的车载显示面板的结构示意图。本发明的实施例还提供一种车载显示面板，所述车载显示面板包括上述的背光模组及面板主体300。\n\n[0052]所述面板主体300包括第一显示部300a和第二显示部300b，所述第一显示部300a位于所述背光模组的所述第一背光模组101的上方，所述第二显示部300b位于所述背光模组的所述第二背光模组102上方。\n\n[0053]其中，由于所述第一背光模组101和所述第二背光模组102可分别独立为所述第一显示部300a和所述第二显示部300b提供背光，因此在所述第一背光模组101或所述第二背光模组102中的一者出现故障时，可利用所述第一背光模组101或所述第二背光模组102中的另一者配合所述面板主体300保证所述车载显示面板仍具有一定的显示功能。\n\n[0054]具体地，所述面板主体300安装于所述第一支撑部1004远离所述第一背板1011的一侧表面1004a和所述第二支撑部1006远离所述第二背板1021的一侧表面1006a上，以通过所述第一支撑部1004、所述第二支撑部1006为所述面板主体300提供支撑。\n\n[0055]进一步地，所述车载显示面板还包括泡棉胶301，所述泡棉胶301位于所述面板主体300与所述第一支撑部1004之间，以及位于所述面板主体300与所述第二支撑部1006之间。\n\n[0056]进一步地，在所述第一背光模组101为分区控制的背光模组，所述第二背光模组102为采用整体控制的背光模组时，所述第一显示部300a相较于所述第二显示部300b具有更高的对比度，在外部环境光线较强的情况下，所述第一显示部300a的显示的内容较所述第二显示部300b的显示的内容更清晰。可选地，所述第一显示部300a用于显示车速、里程等信息，所述第二显示部300b可用于固定显示胎压、油耗等信息。其中，所述第一显示部300a的显示内容可根据实际需求进行调整，在此不再进行赘述。\n\n[0057]更进一步地，为具有相同显示面积的所述面板主体300提供背光时，所述第一背光模组101所包括的所述第一光源1012的数量会大于所述第二背光模组102所包括的所述第二光源1022的数量，由此会致使所述背光模组的制造成本增大。但所述第一背光模组101所包括的所述第一光源1012的数量越多，所述第一显示部300a的显示画质越细腻。因此为兼顾制造成本及显示效果，所述第二显示部300b的显示尺寸小于或等于所述车载显示面板的显示尺寸的0.5倍。如所述车载显示面板的显示尺寸为12.3英寸时，所述第二显示部300b的显示尺寸为4.2英寸或3.5英寸；所述车载显示面板的显示尺寸为26.3英寸时，所述第二显示部300b的显示尺寸为7英寸或8英寸。可选地，在俯视视角下，所述开口101a的设置位置不限于所述第一背板1011的中部。可以理解的，所述开口101a的数量不限于一个。具体地，所述开口101a还可以包括第一开口、第二开口等，所述第二背光模组102包括安装所述第一开口内的第一子背光模组、安装于所述第二开口内的第二子背光模组等，所述第二显示部300b包括位于所述第一子背光模组上方的第一子显示部、位于所述第二子背光模组上方的第二子显示部等。其中，所述第一子背光模组、所述第二子背光模组等中的至少一个采用的背光控制类型与所述第一背光模组101采用的背光控制类型不同。进一步地，所述第一子背光模组、所述第二子背光模组等中的至少一个与所述第一背光模组101的类型不同，在此不再进行赘述。\n\n[0058]如图4是本发明实施例提供的面板主体的结构示意图，所述面板主体300包括阵列基板302、彩膜基板303、偏光片304及位于所述阵列基板302与所述彩膜基板303之间的框胶305和液晶306。可选地，所述液晶306包括正性液晶、负性液晶。进一步地，所述面板主体300还包括公共电极、像素电极、触控电极、配向层、彩膜层等未示出部分。\n\n[0059]本发明的实施例还提供一种车辆，所述车辆包括任一上述的车载显示面板，通过所述第一背光模组、所述第二背光模组配合所述面板主体实现显示。在所述第一背光模组或所述第二背光模组中的一者出现故障时，利用所述第一背光模组或所述第二背光模组中的另一者配合所述面板主体保证所述车载显示面板仍具有一定的显示功能，可有利于提高所述背光模组的容错性，提高所述车载显示面板的可靠性和稳定性，有利于保证行车安全。\n\n[0060]可选地，所述车载显示面板可用作中控显示、仪表显示、后视镜显示、抬头显示等。\n\n[0061]本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10929, 23983, '技术领域\n\n[0001]本发明涉及显示领域，具体涉及一种驱动电路及显示装置。\n\n背景技术\n\n[0002]随着人们对于显示装置显示效果的要求越来越高，mini LED已经成为现在高阶显示装置的应用趋势，mini LED是由多个灯板组成的，由于制程原因灯板会存在一定的损伤，在对灯板进行点灯测试时，灯板很细小的损伤不易被发现，但是随着点灯时间加长，灯板的异常就会出现，造成显示异常，从而引起客诉或退货。\n\n发明内容\n\n[0003]本发明实施例提供一种驱动电路及显示装置，可以提高点灯测试的测试电压，使得mini LED灯板的细微损伤能够在点灯测试过程中及时暴露出来，有利于及时剔除残次品，提高出货品质，降低客诉或退货现象的发生。\n\n[0004]本发明实施例提供一种驱动电路，包括：电源控制模块和输出控制模块，所述电源控制模块的输出端与所述输出控制模块的输入端连接，所述输出控制模块包括第一电阻、第二电阻、第三电阻和开关控制单元，所述开关控制单元与所述第三电阻串联后与所述二电阻并联，然后再与所述第一电阻串联；\n\n[0005]当所述驱动电路处于第一状态时，所述开关控制单元断开，所述第三电阻所在的支路断接，所述第一电阻和所述第二电阻串联，所述驱动电路输出电压Vout1；\n\n[0006]当所述驱动电路处于第二状态时，所述开关控制单元导通，所述第三电阻所在的支路导通，所述第三电阻与所述第二电阻并联后与所述第一电阻串联，所述驱动电路输出电压Vout2；\n\n[0007]所述Vout2的绝对值大于所述Vout1的绝对值。\n\n[0008]可选的，在本发明的一些实施例中，所述开关控制单元为拨码开关。\n\n[0009]可选的，在本发明的一些实施例中，所述开关控制单元至少包括一个MOS晶体管、一个拨码开关和一个电阻，所述拨码开关和所述电阻形成相互串联的支路，所述MOS晶体管与所述第三电阻串联，所述MOS晶体管的栅极与所述支路连接，通过所述支路的导通控制所述MOS晶体管的栅极电压。\n\n[0010]可选的，在本发明的一些实施例中，所述支路的一端接输入电压，所述支路的另一端接地，所述拨码开关设于所述支路的电压接入端和所述MOS晶体管的栅极之间。\n\n[0011]可选的，在本发明的一些实施例中，所述开关控制单元包括一个MOS晶体管、一个拨码开关和一个电阻。\n\n[0012]可选的，在本发明的一些实施例中，所述拨码开关的第一端接所述输入电压，所述拨码开关的第二端与所述电阻的第一端、所述MOS晶体管的栅极连接，所述电阻的第二端接地。\n\n[0013]可选的，在本发明的一些实施例中，所述开关控制单元包括一个MOS晶体管、一个拨码开关、一个指示灯和第四电阻、第五电阻，所述拨码开关、所述第四电阻、所述指示灯和所述第五电阻形成相互串联的支路。\n\n[0014]可选的，在本发明的一些实施例中，所述第四电阻的第一端接所述输入电压，所述第四电阻的第二端与所述指示灯的第一端连接，所述指示灯的第二端与所述拨码开关的第一端连接，所述拨码开关的第二端与所述第五电阻的第一端、所述MOS晶体管的栅极连接，所述第五电阻的第二端接地。\n\n[0015]可选的，在本发明的一些实施例中，所述第四电阻的第一端接所述输入电压，所述第四电阻的第二端与所述拨码开关的第一端连接，所述拨码开关的第二端与所述指示灯的第一端、所述MOS晶体管的栅极连接，所述指示灯的第二端与所述第五电阻的第一端连接，所述第五电阻的第二端接地。\n\n[0016]可选的，在本发明的一些实施例中，所述电源控制模块的输入端接入第一外接电源，且与所述第一电阻的第一端、所述驱动电路的输出端连接，所述电源控制模块的输出端与所述第一电阻的第二端、所述第二电阻的第一端、所述第三电阻的第一端连接，所述第二电阻的第二端接地，所述MOS晶体管的第一端与所述第三电阻的第二端连接，所述MOS晶体管的第二端接地，所述拨码开关所在支路的第一端接入第二外接电源，所述拨码开关所在支路的第二端接地。\n\n[0017]可选的，在本发明的一些实施例中，所述电源控制模块的输入端接入第一外接电源，所述电源控制模块的第一输出端与所述第一电阻的第一端连接且接地，所述电源控制模块的第二输出端与所述第一电阻的第二端、所述第二电阻的第一端、所述第三电阻的第一端连接，所述MOS晶体管的第一端与所述第三电阻的第二端连接，所述电源控制模块的第三输出端与所述第二电阻的第二端、所述MOS晶体管的第二端、所述拨码开关所在支路的第一端、以及所述驱动电路的输出端连接，所述拨码开关所在支路的第二端接地。\n\n[0018]可选的，在本发明的一些实施例中，所述驱动电路还包括稳压模块，所述稳压模块的一端与所述电源控制模块连接，另一端与所述第一电阻的第一端连接，用于保证所述驱动电路输出电压的稳定性。\n\n[0019]可选的，在本发明的一些实施例中，所述稳压模块至少包括电容或电感中的一种。\n\n[0020]相应的，本发明实施例还提供一种显示装置，包括本发明任意一种实施例提供的驱动电路。\n\n[0021]本发明实施例提供一种驱动电路及显示装置，所述驱动电路包括电源控制模块和输出控制模块，电源控制模块的输出端与输出控制模块的输入端连接，输出控制模块包括第一电阻、第二电阻、第三电阻和开关控制单元，开关控制单元与第三电阻串联后与所述二电阻并联，然后再与第一电阻串联；当驱动电路处于第一状态时，开关控制单元断开，第三电阻所在的支路断接，第一电阻和第二电阻串联，驱动电路输出电压Vout1；当驱动电路处于第二状态时，开关控制单元导通，第三电阻所在的支路导通，第三电阻与第二电阻并联后与第一电阻串联，驱动电路输出电压Vout2；Vout2的绝对值大于Vout1的绝对值。本发明实施例通过在驱动电路中设置开关控制单元，在显示面板处于点灯测试状态时，驱动电路处于第二状态时，驱动电路输出比正常输出电压更高的点灯测试电压，提高了点灯测试过程中的测试电压，使得mini LED灯板的细微损伤能够在点灯测试过程中及时暴露出来，有利于及时剔除残次品，提高出货品质，降低客诉或退货现象的发生。\n\n附图说明\n\n[0022]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0023]图1是本发明实施例提供的驱动电路的第一种电路图；\n\n[0024]图2是本发明实施例提供的驱动电路的第二种电路图。\n\n具体实施方式\n\n[0025]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本发明，并不用于限制本发明。在本发明中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0026]本发明实施例提供一种驱动电路及显示装置，以提高点灯测试的测试电压，使得mini LED灯板的细微损伤能够在点灯测试过程中及时暴露出来，有利于及时剔除残次品，提高出货品质，降低客诉或退货现象的发生。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0027]在一种实施例中，请参照图1和图2所示，1示出了本发明实施例提供的驱动电路的第一种电路图；图2示出了本发明实施例提供的驱动电路的第二种电路图。如图所示，本发明实施例提供的驱动电路包括：电源控制模块110和输出控制模块120，电源控制模块110的输出端与输出控制模块120的输入端连接，输出控制模块120包括第一电阻R1、第二电阻R2、第三电阻R3和开关控制单元121，开关控制单元121与第三电阻R3串联后与所述二电阻R2并联，然后再与第一电阻R1串联；当驱动电路处于第一状态时，开关控制单元121断开，第三电阻R3所在的支路断接，第一电阻R1和第二电阻R2串联，驱动电路输出电压Vout1；当驱动电路处于第二状态时，开关控制单元121导通，第三电阻R3所在的支路导通，第三电阻R3与第二电阻R2并联后与第一电阻R1串联，驱动电路输出电压Vout2；Vout2的绝对值大于Vout1的绝对值。\n\n[0028]本发明实施例通过在驱动电路中设置开关控制单元，在显示面板处于点灯测试状态时，驱动电路处于第二状态时，驱动电路输出比正常输出电压更高的点灯测试电压，提高了点灯测试过程中的测试电压，使得mini LED灯板的细微损伤能够在点灯测试过程中及时暴露出来，有利于及时剔除残次品，提高出货品质，降低客诉或退货现象的发生。\n\n[0029]在一种实施例中，请参照图1，驱动电路包括电源控制模块110、输出控制模块120和稳压模块130，电源控制模块110的输入端与稳压模块130的第一端连接，电源控制模块110的输出端与输出控制模块120的第一输入端连接，稳压模块130的第二端与输出控制模块120的第二输入端连接，且与驱动电路的输出端连接于点A。\n\n[0030]其中，电源控制模块110包括电源控制芯片，电源控制芯片用于控制电源控制模块110的输出电压。\n\n[0031]稳压模块130包括电感L1，电感L1的第一端与电源控制模块110的输入端连接，接入外部输入电压V0，电感L1的第二端与输出控制模块120的第二输入端、驱动电路的输出端连接于点A，稳压模块130采用电感L1过滤输出控制模块120的电压中的杂波，从而保证驱动电路输出电压的稳定性。\n\n[0032]输出控制模块120用于控制驱动电路输出电压Vout的大小，输出控制模块120包括第一电阻R1、第二电阻R2、第三电阻R3和开关控制单元121。其中，第一电阻R1的第一端连接于点A，即与输出控制模块120的第一输入端、驱动电路的输出端连接，第一电阻R1的第二端、第二电阻R2的第一端和第三电阻R3的第一端连接于点B，即与输出控制模块120的第一输入端、电源控制模块110的输入端连接，第二电阻R2的第二端接地，第三电阻R3的第二端与开关控制单元121的第一端连接，开关控制单元121的第二端接地。\n\n[0033]进一步，开关控制单元121包括MOS晶体管Q1、第四电阻R4、指示灯D1、拨码开关S1、以及第五电阻R5。其中，MOS晶体管Q1的第一端与开关控制单元121的第一端连接，即与第三电阻R3的第二端连接，MOS晶体管Q1的第二端接地；第四电阻R4的第一端接入外部电压V1，第四电阻R4的第二端与指示灯D1的第一端连接，指示灯D1的第二端与拨码开关S1的第一端连接，拨码开关S1的第二端与第五电阻R5的第一端连接，第五电阻R5的第二端接地，MOS晶体管Q1的栅极与拨码开关S1的第二端、第五电阻R5的第一端连接于点C。\n\n[0034]其中，第三电阻R3的第一端与第二电阻R2的第一端连接，第三电阻R3的第二端通过开关控制单元121接地，当开关控制单元121导通时，第三电阻R3的第一端的电压与第二电阻R2的第一端电压保持一致，第三电阻R3的第二端的电压与第二电阻R2的第一端的电压保持一致，可视为第三电阻R3与第二电阻R2并联；当开关控制单元121断开时，第三电阻R3所在的支路为断路。\n\n[0035]又由于R1和R2均为定值电阻，R1和R2通过串联分压以决定驱动电路输出电压的大小，通过开关控制单元121控制第三电阻R3所在支路的导通状态，从而控制第三电阻R3与第二电阻R2的并联状态，可以调节第二电阻R2两端的分压大小，从而调节第一电阻R1两端的分压大小，进而调节驱动电路的输出电压Vout的大小。\n\n[0036]开关控制单元121的导通状态由MOS晶体管Q1的导通状态决定，MOS晶体管Q1的栅极电压由第四电阻R4、指示灯D1、拨码开关S1和第五电阻R5相互串联形成的支路控制。在本实施例中，MOS晶体管Q1为N型晶体管，当MOS晶体管Q1的栅极处于高电位时，MOS晶体管Q1导通，当MOS晶体管Q1的栅极处于低电位时，MOS晶体管Q1断开。\n\n[0037]当拨码开关S1闭合时，第四电阻R4、指示灯D1、拨码开关S1和第五电阻R5相互串联形成的支路导通，外部电压V1输入该支路，该外部电压V1为高电位电压，例如可选为5V，第五电阻R5的第二端接地，则第五电阻R5的第一端处于高电位，即点C处于高电位，MOS晶体管Q1的栅极连接于点C，同样处于高电位，MOS晶体管Q1导通，第三电阻R3所在的支路导通，第三电阻R3与第二电阻R2并联；同时，指示灯D1点亮，指示开关控制单元121处于导通状态，进而指示该状态对应的驱动电路的输出电压状态。\n\n[0038]相反的，当拨码开关S1断开时，第四电阻R4、指示灯D1、拨码开关S1和第五电阻R5相互串联形成的支路断开，第五电阻R5的第二端接地，则第五电阻R5的第一端为接地电位，即点C处于地电位，MOS晶体管Q1的栅极连接于点C，同样处于地电位，MOS晶体管Q1断开，第三电阻R3所在的支路断接；同时，指示灯D1不点亮，指示开关控制单元121处于断开状态，进而指示该状态对应的驱动电路的输出电压状态。\n\n[0039]在本实施例中，MOS晶体管Q1也可以为P型晶体管，相对应的，第四电阻R4的第一端接地，第五电阻R5的第二端接入外部低电位电压。\n\n[0040]在本实施例中，第四电阻R4、指示灯D1也可以选择性的去除其中任意一个或两个，且不影响整个开关控制单元121的正常运行。\n\n[0041]在本实施例中，开关控制单元121也可以直接采用拨码开关替代，该拨码开关的第一端与第三电阻的第二端连接，第二端接地。当拨码开关闭合时，第三电阻R3所在的支路导通，第三电阻R3与第二电阻R2并联；当拨码开关断开时，第三电阻R3所在的支路断接。\n\n[0042]当驱动电路处于第一状态时，开关控制单元121断开，第三电阻R3所在的支路断接，第一电阻R1和第二电阻R2串联。驱动电路的输出电压Vout1为：\n\n[0043]Vout1＝VB(1+R1/R2)\n\n[0044]其中，VB为第二电阻R2的第一端的电压，R1为第一电阻R1的电阻值，R2为第二电阻R2的电阻值。VB通常为一固定电压值，如0.6V。\n\n[0045]当驱动电路处于第二状态时，开关控制单元121导通，第三电阻R3所在的支路导通，第二电阻R2和第三电阻R3并联后与第一电阻R1串联。驱动电路的输出电压Vout2为：\n\n[0046]Vout2＝VB(1+R1×(R2+R3)/(R2×R3))\n\n[0047]其中，VB为第二电阻R2的第一端的电压，R1为第一电阻R1的电阻值，R2为第二电阻R2的电阻值，R3为第三电阻R3的电阻值。VB通常为一固定电压值，如0.6V。\n\n[0048]由上述公式可知，驱动电路在第二状态下的输出电压Vout2比在第一状态下的输出电压Vout1大。在本发明实施例中，第三电阻R3可以是定值电阻，也可以是滑动电阻器。当第三电阻R3为定值电阻时，可以固定调节第二状态时驱动电路的输出电压Vout2；当第三电阻R3为滑动电阻器时，可以根据具体的需要，在一定范围内调节第二状态时驱动电路的输出电压Vout2。\n\n[0049]当驱动电路处于第一状态时，显示面板处于一般状态，此时驱动电路的输出电压Vout1为正常输出电压。当驱动电路处于第二状态时，显示面板处于点灯测试状态，此时驱动电路的输出电压Vout2为点灯测试电压，点灯测试电压比正常输出电压高，即本发明实施例提供的驱动电路提高了点灯测试过程中的测试电压，使得mini LED灯板的细微损伤能够在点灯测试过程中及时暴露出来，有利于及时剔除残次品，提高出货品质，降低客诉或退货现象的发生。\n\n[0050]在另一种实施例中，请参照图2，驱动电路包括电源控制模块110、输出控制模块120和稳压模块130，电源控制模块110的输入端接入外部输入电压V0，电源控制模块110的第一输出端与稳压模块130的第一端连接，电源控制模块110的第二输出端与输出控制模块120的第一输入端连接，电源控制模块110的第三输出端与输出控制模块120的第二输入端连接，且与驱动电路的输出端连接于点E，稳压模块130的第二端与输出控制模块120连接于点A且接地。\n\n[0051]其中，电源控制模块110包括电源控制芯片，电源控制芯片用于控制电源控制模块110的输出电压，具体的将正向的外部输入电压V0转换为负向电压输出至输出控制模块120。\n\n[0052]稳压模块130包括电容C1和电感L1，电容C1的第一端与电源控制模块110的第一输出端连接，电容C1的第二端与电感L1的第一端连接，电感L1的第二端与输出控制模块120连接于点A且接地，稳压模块130采用电容C1和电感L1共同过滤输出控制模块120的电压中的杂波，从而保证驱动电路输出电压的稳定性。\n\n[0053]输出控制模块120用于控制驱动电路输出电压Vout的大小，输出控制模块120包括第一电阻R1、第二电阻R2、第三电阻R3和开关控制单元121。其中，第一电阻R1的第一端连接于点A，即第一电阻R1的第一端接地，第一电阻R1的第二端、第二电阻R2的第一端和第三电阻R3的第一端连接于点B，即与输出控制模块120的第一输入端、电源控制模块110的第一输出端连接，第三电阻R3的第二端与开关控制单元121的第一端连接，第二电阻R2的第二端、开关控制单元121的第二端连接于点E，即与电源控制模块110的第三输出端、输出控制模块120的第二输入端和驱动电路的输出端连接，开关控制单元121的第三端接地。\n\n[0054]进一步，开关控制单元121包括MOS晶体管Q1、第四电阻R4、指示灯D1、拨码开关S1、以及第五电阻R5。其中，MOS晶体管Q1的第一端与开关控制单元121的第一端连接，即与第三电阻R3的第二端连接，MOS晶体管Q1的第二端连接于点E，即与开关控制单元121的第二端、第二电阻R2的第二端连接；第四电阻R4的第一端接地，第四电阻R4的第二端与指示灯D1的第一端连接，指示灯D1的第二端与拨码开关S1的第一端连接，拨码开关S1的第二端与第五电阻R5的第一端连接，第五电阻R5的第二端连接于点E，即与开关控制单元121的第二端连接，MOS晶体管Q1的栅极与指示灯D1的第二端、拨码开关S1的第一端连接于点C。\n\n[0055]其中，第三电阻R3的第一端与第二电阻R2的第一端连接，第三电阻R3的第二端通过开关控制单元121与第二电阻R2的第二端连接，当开关控制单元121导通时，第三电阻R3的第一端的电压与第二电阻R2的第一端电压保持一致，第三电阻R3的第二端的电压与第二电阻R2的第一端的电压保持一致，可视为第三电阻R3与第二电阻R2并联；当开关控制单元121断开时，第三电阻R3所在的支路为断路。\n\n[0056]又由于R1和R2均为定值电阻，R1和R2通过串联分压以决定驱动电路输出电压的大小，通过开关控制单元121控制第三电阻R3所在支路的导通状态，从而控制第三电阻R3与第二电阻R2的并联状态，可以调节第二电阻R2两端的分压大小，从而调节第一电阻R1两端的分压大小，进而调节驱动电路的输出电压Vout的大小。\n\n[0057]开关控制单元121的导通状态由MOS晶体管Q1的导通状态决定，MOS晶体管Q1的栅极电压由第四电阻R4、指示灯D1、拨码开关S1和第五电阻R5相互串联形成的支路控制。在本实施例中，MOS晶体管Q1为P型晶体管，当MOS晶体管Q1的栅极处于低电位时，MOS晶体管Q1导通，当MOS晶体管Q1的栅极处于高电位时，MOS晶体管Q1断开。\n\n[0058]当拨码开关S1闭合时，第四电阻R4、指示灯D1、拨码开关S1和第五电阻R5相互串联形成的支路导通，电源控制模块110的第三输出端向输出控制模块120输入低电位的负向电压，第四电阻R4的第一端接地，则第四电阻R4的第二端处于负向的低电位，则点C处于负向的低电位，MOS晶体管Q1的栅极连接于点C，同样处于负向的低电位，MOS晶体管Q1导通，第三电阻R3所在的支路导通，第三电阻R3与第二电阻R2并联；同时，指示灯D1点亮，指示开关控制单元121处于导通状态，进而指示该状态对应的驱动电路的输出电压状态。\n\n[0059]相反的，当拨码开关S1断开时，第四电阻R4、指示灯D1、拨码开关S1和第五电阻R5相互串联形成的支路断开，第四电阻R4的第一端接地，则第四电阻R4的第一端为接地电位，即点C处于地电位，MOS晶体管Q1的栅极连接于点C，同样处于地电位，MOS晶体管Q1断开，第三电阻R3所在的支路断接；同时，指示灯D1不点亮，指示开关控制单元121处于断开状态，进而指示该状态对应的驱动电路的输出电压状态。\n\n[0060]在本实施例中，第五电阻R5、指示灯D1也可以选择性的去除其中任意一个或两个，且不影响整个开关控制单元121的正常运行。\n\n[0061]在本实施例中，开关控制单元121也可以直接采用拨码开关替代，该拨码开关的第一端与第三电阻的第二端连接，第二端接地。当拨码开关闭合时，第三电阻R3所在的支路导通，第三电阻R3与第二电阻R2并联；当拨码开关断开时，第三电阻R3所在的支路断接。\n\n[0062]当驱动电路处于第一状态时，开关控制单元121断开，第三电阻R3所在的支路断接，第一电阻R1和第二电阻R2串联。驱动电路的输出电压Vout1为：\n\n[0063]Vout1＝VB(1+R1/R2)\n\n[0064]其中，VB为第二电阻R2的第一端的电压，R1为第一电阻R1的电阻值，R2为第二电阻R2的电阻值。VB通常为一固定电压值，如-0.6V。\n\n[0065]当驱动电路处于第二状态时，开关控制单元121导通，第三电阻R3所在的支路导通，第二电阻R2和第三电阻R3并联后与第一电阻R1串联。驱动电路的输出电压Vout2为：\n\n[0066]Vout2＝VB(1+R1×(R2+R3)/(R2×R3))\n\n[0067]其中，VB为第二电阻R2的第一端的电压，R1为第一电阻R1的电阻值，R2为第二电阻R2的电阻值，R3为第三电阻R3的电阻值。VB通常为一固定电压值，如-0.6V。\n\n[0068]由上述公式可知，驱动电路在第二状态下的输出电压Vout2的绝对值比在第一状态下的输出电压Vout1的绝对值大。在本发明实施例中，第三电阻R3可以是定值电阻，也可以是滑动电阻器。当第三电阻R3为定值电阻时，可以固定调节第二状态时驱动电路的输出电压Vout2；当第三电阻R3为滑动电阻器时，可以根据具体的需要，在一定范围内调节第二状态时驱动电路的输出电压Vout2。\n\n[0069]当驱动电路处于第一状态时，显示面板处于一般状态，此时驱动电路的输出电压Vout1为正常输出电压。当驱动电路处于第二状态时，显示面板处于点灯测试状态，此时驱动电路的输出电压Vout2为点灯测试电压，点灯测试电压比正常输出电压高，即本发明实施例提供的驱动电路提高了点灯测试过程中的测试电压，使得mini LED灯板的细微损伤能够在点灯测试过程中及时暴露出来，有利于及时剔除残次品，提高出货品质，降低客诉或退货现象的发生。\n\n[0070]相应的，本发明实施例还提供一种显示装置，该显示装置包括本发明实施例提供的任意一种驱动电路，具备本发明实施例提供的任意一种驱动电路的技术特征和技术效果，具体实施方式及工作原理请参照上述具体实施例，在此不再赘述。\n\n[0071]综上所述，本发明实施例提供一种驱动电路及显示装置，该驱动电路包括：电源控制模块和输出控制模块，电源控制模块的输出端与输出控制模块的输入端连接，输出控制模块包括第一电阻、第二电阻、第三电阻和开关控制单元，开关控制单元与第三电阻串联后与所述二电阻并联，然后再与第一电阻串联；当驱动电路处于第一状态时，开关控制单元断开，第三电阻所在的支路断接，第一电阻和第二电阻串联，驱动电路输出电压Vout1；当驱动电路处于第二状态时，开关控制单元导通，第三电阻所在的支路导通，第三电阻与第二电阻并联后与第一电阻串联，驱动电路输出电压Vout2；Vout2的绝对值大于Vout1的绝对值。本发明实施例通过在驱动电路中设置开关控制单元，在显示面板处于点灯测试状态时，驱动电路处于第二状态时，驱动电路输出比正常输出电压更高的点灯测试电压，提高了点灯测试过程中的测试电压，使得mini LED灯板的细微损伤能够在点灯测试过程中及时暴露出来，有利于及时剔除残次品，提高出货品质，降低客诉或退货现象的发生。\n\n[0072]以上对本发明实施例所提供的一种驱动电路及显示装置进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。', '技术领域\n\n[0001]本发明涉及显示领域，具体涉及一种驱动电路及显示装置。\n\n背景技术\n\n[0002]随着人们对于显示装置显示效果的要求越来越高，mini LED已经成为现在高阶显示装置的应用趋势，mini LED是由多个灯板组成的，由于制程原因灯板会存在一定的损伤，在对灯板进行点灯测试时，灯板很细小的损伤不易被发现，但是随着点灯时间加长，灯板的异常就会出现，造成显示异常，从而引起客诉或退货。\n\n发明内容\n\n[0003]本发明实施例提供一种驱动电路及显示装置，可以提高点灯测试的测试电压，使得mini LED灯板的细微损伤能够在点灯测试过程中及时暴露出来，有利于及时剔除残次品，提高出货品质，降低客诉或退货现象的发生。\n\n[0004]本发明实施例提供一种驱动电路，包括：电源控制模块和输出控制模块，所述电源控制模块的输出端与所述输出控制模块的输入端连接，所述输出控制模块包括第一电阻、第二电阻、第三电阻和开关控制单元，所述开关控制单元与所述第三电阻串联后与所述二电阻并联，然后再与所述第一电阻串联；\n\n[0005]当所述驱动电路处于第一状态时，所述开关控制单元断开，所述第三电阻所在的支路断接，所述第一电阻和所述第二电阻串联，所述驱动电路输出电压Vout1；\n\n[0006]当所述驱动电路处于第二状态时，所述开关控制单元导通，所述第三电阻所在的支路导通，所述第三电阻与所述第二电阻并联后与所述第一电阻串联，所述驱动电路输出电压Vout2；\n\n[0007]所述Vout2的绝对值大于所述Vout1的绝对值。\n\n[0008]可选的，在本发明的一些实施例中，所述开关控制单元为拨码开关。\n\n[0009]可选的，在本发明的一些实施例中，所述开关控制单元至少包括一个MOS晶体管、一个拨码开关和一个电阻，所述拨码开关和所述电阻形成相互串联的支路，所述MOS晶体管与所述第三电阻串联，所述MOS晶体管的栅极与所述支路连接，通过所述支路的导通控制所述MOS晶体管的栅极电压。\n\n[0010]可选的，在本发明的一些实施例中，所述支路的一端接输入电压，所述支路的另一端接地，所述拨码开关设于所述支路的电压接入端和所述MOS晶体管的栅极之间。\n\n[0011]可选的，在本发明的一些实施例中，所述开关控制单元包括一个MOS晶体管、一个拨码开关和一个电阻。\n\n[0012]可选的，在本发明的一些实施例中，所述拨码开关的第一端接所述输入电压，所述拨码开关的第二端与所述电阻的第一端、所述MOS晶体管的栅极连接，所述电阻的第二端接地。\n\n[0013]可选的，在本发明的一些实施例中，所述开关控制单元包括一个MOS晶体管、一个拨码开关、一个指示灯和第四电阻、第五电阻，所述拨码开关、所述第四电阻、所述指示灯和所述第五电阻形成相互串联的支路。\n\n[0014]可选的，在本发明的一些实施例中，所述第四电阻的第一端接所述输入电压，所述第四电阻的第二端与所述指示灯的第一端连接，所述指示灯的第二端与所述拨码开关的第一端连接，所述拨码开关的第二端与所述第五电阻的第一端、所述MOS晶体管的栅极连接，所述第五电阻的第二端接地。\n\n[0015]可选的，在本发明的一些实施例中，所述第四电阻的第一端接所述输入电压，所述第四电阻的第二端与所述拨码开关的第一端连接，所述拨码开关的第二端与所述指示灯的第一端、所述MOS晶体管的栅极连接，所述指示灯的第二端与所述第五电阻的第一端连接，所述第五电阻的第二端接地。\n\n[0016]可选的，在本发明的一些实施例中，所述电源控制模块的输入端接入第一外接电源，且与所述第一电阻的第一端、所述驱动电路的输出端连接，所述电源控制模块的输出端与所述第一电阻的第二端、所述第二电阻的第一端、所述第三电阻的第一端连接，所述第二电阻的第二端接地，所述MOS晶体管的第一端与所述第三电阻的第二端连接，所述MOS晶体管的第二端接地，所述拨码开关所在支路的第一端接入第二外接电源，所述拨码开关所在支路的第二端接地。\n\n[0017]可选的，在本发明的一些实施例中，所述电源控制模块的输入端接入第一外接电源，所述电源控制模块的第一输出端与所述第一电阻的第一端连接且接地，所述电源控制模块的第二输出端与所述第一电阻的第二端、所述第二电阻的第一端、所述第三电阻的第一端连接，所述MOS晶体管的第一端与所述第三电阻的第二端连接，所述电源控制模块的第三输出端与所述第二电阻的第二端、所述MOS晶体管的第二端、所述拨码开关所在支路的第一端、以及所述驱动电路的输出端连接，所述拨码开关所在支路的第二端接地。\n\n[0018]可选的，在本发明的一些实施例中，所述驱动电路还包括稳压模块，所述稳压模块的一端与所述电源控制模块连接，另一端与所述第一电阻的第一端连接，用于保证所述驱动电路输出电压的稳定性。\n\n[0019]可选的，在本发明的一些实施例中，所述稳压模块至少包括电容或电感中的一种。\n\n[0020]相应的，本发明实施例还提供一种显示装置，包括本发明任意一种实施例提供的驱动电路。\n\n[0021]本发明实施例提供一种驱动电路及显示装置，所述驱动电路包括电源控制模块和输出控制模块，电源控制模块的输出端与输出控制模块的输入端连接，输出控制模块包括第一电阻、第二电阻、第三电阻和开关控制单元，开关控制单元与第三电阻串联后与所述二电阻并联，然后再与第一电阻串联；当驱动电路处于第一状态时，开关控制单元断开，第三电阻所在的支路断接，第一电阻和第二电阻串联，驱动电路输出电压Vout1；当驱动电路处于第二状态时，开关控制单元导通，第三电阻所在的支路导通，第三电阻与第二电阻并联后与第一电阻串联，驱动电路输出电压Vout2；Vout2的绝对值大于Vout1的绝对值。本发明实施例通过在驱动电路中设置开关控制单元，在显示面板处于点灯测试状态时，驱动电路处于第二状态时，驱动电路输出比正常输出电压更高的点灯测试电压，提高了点灯测试过程中的测试电压，使得mini LED灯板的细微损伤能够在点灯测试过程中及时暴露出来，有利于及时剔除残次品，提高出货品质，降低客诉或退货现象的发生。\n\n附图说明\n\n[0022]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0023]图1是本发明实施例提供的驱动电路的第一种电路图；\n\n[0024]图2是本发明实施例提供的驱动电路的第二种电路图。\n\n具体实施方式\n\n[0025]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本发明，并不用于限制本发明。在本发明中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0026]本发明实施例提供一种驱动电路及显示装置，以提高点灯测试的测试电压，使得mini LED灯板的细微损伤能够在点灯测试过程中及时暴露出来，有利于及时剔除残次品，提高出货品质，降低客诉或退货现象的发生。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0027]在一种实施例中，请参照图1和图2所示，1示出了本发明实施例提供的驱动电路的第一种电路图；图2示出了本发明实施例提供的驱动电路的第二种电路图。如图所示，本发明实施例提供的驱动电路包括：电源控制模块110和输出控制模块120，电源控制模块110的输出端与输出控制模块120的输入端连接，输出控制模块120包括第一电阻R1、第二电阻R2、第三电阻R3和开关控制单元121，开关控制单元121与第三电阻R3串联后与所述二电阻R2并联，然后再与第一电阻R1串联；当驱动电路处于第一状态时，开关控制单元121断开，第三电阻R3所在的支路断接，第一电阻R1和第二电阻R2串联，驱动电路输出电压Vout1；当驱动电路处于第二状态时，开关控制单元121导通，第三电阻R3所在的支路导通，第三电阻R3与第二电阻R2并联后与第一电阻R1串联，驱动电路输出电压Vout2；Vout2的绝对值大于Vout1的绝对值。\n\n[0028]本发明实施例通过在驱动电路中设置开关控制单元，在显示面板处于点灯测试状态时，驱动电路处于第二状态时，驱动电路输出比正常输出电压更高的点灯测试电压，提高了点灯测试过程中的测试电压，使得mini LED灯板的细微损伤能够在点灯测试过程中及时暴露出来，有利于及时剔除残次品，提高出货品质，降低客诉或退货现象的发生。\n\n[0029]在一种实施例中，请参照图1，驱动电路包括电源控制模块110、输出控制模块120和稳压模块130，电源控制模块110的输入端与稳压模块130的第一端连接，电源控制模块110的输出端与输出控制模块120的第一输入端连接，稳压模块130的第二端与输出控制模块120的第二输入端连接，且与驱动电路的输出端连接于点A。\n\n[0030]其中，电源控制模块110包括电源控制芯片，电源控制芯片用于控制电源控制模块110的输出电压。\n\n[0031]稳压模块130包括电感L1，电感L1的第一端与电源控制模块110的输入端连接，接入外部输入电压V0，电感L1的第二端与输出控制模块120的第二输入端、驱动电路的输出端连接于点A，稳压模块130采用电感L1过滤输出控制模块120的电压中的杂波，从而保证驱动电路输出电压的稳定性。\n\n[0032]输出控制模块120用于控制驱动电路输出电压Vout的大小，输出控制模块120包括第一电阻R1、第二电阻R2、第三电阻R3和开关控制单元121。其中，第一电阻R1的第一端连接于点A，即与输出控制模块120的第一输入端、驱动电路的输出端连接，第一电阻R1的第二端、第二电阻R2的第一端和第三电阻R3的第一端连接于点B，即与输出控制模块120的第一输入端、电源控制模块110的输入端连接，第二电阻R2的第二端接地，第三电阻R3的第二端与开关控制单元121的第一端连接，开关控制单元121的第二端接地。\n\n[0033]进一步，开关控制单元121包括MOS晶体管Q1、第四电阻R4、指示灯D1、拨码开关S1、以及第五电阻R5。其中，MOS晶体管Q1的第一端与开关控制单元121的第一端连接，即与第三电阻R3的第二端连接，MOS晶体管Q1的第二端接地；第四电阻R4的第一端接入外部电压V1，第四电阻R4的第二端与指示灯D1的第一端连接，指示灯D1的第二端与拨码开关S1的第一端连接，拨码开关S1的第二端与第五电阻R5的第一端连接，第五电阻R5的第二端接地，MOS晶体管Q1的栅极与拨码开关S1的第二端、第五电阻R5的第一端连接于点C。\n\n[0034]其中，第三电阻R3的第一端与第二电阻R2的第一端连接，第三电阻R3的第二端通过开关控制单元121接地，当开关控制单元121导通时，第三电阻R3的第一端的电压与第二电阻R2的第一端电压保持一致，第三电阻R3的第二端的电压与第二电阻R2的第一端的电压保持一致，可视为第三电阻R3与第二电阻R2并联；当开关控制单元121断开时，第三电阻R3所在的支路为断路。\n\n[0035]又由于R1和R2均为定值电阻，R1和R2通过串联分压以决定驱动电路输出电压的大小，通过开关控制单元121控制第三电阻R3所在支路的导通状态，从而控制第三电阻R3与第二电阻R2的并联状态，可以调节第二电阻R2两端的分压大小，从而调节第一电阻R1两端的分压大小，进而调节驱动电路的输出电压Vout的大小。\n\n[0036]开关控制单元121的导通状态由MOS晶体管Q1的导通状态决定，MOS晶体管Q1的栅极电压由第四电阻R4、指示灯D1、拨码开关S1和第五电阻R5相互串联形成的支路控制。在本实施例中，MOS晶体管Q1为N型晶体管，当MOS晶体管Q1的栅极处于高电位时，MOS晶体管Q1导通，当MOS晶体管Q1的栅极处于低电位时，MOS晶体管Q1断开。\n\n[0037]当拨码开关S1闭合时，第四电阻R4、指示灯D1、拨码开关S1和第五电阻R5相互串联形成的支路导通，外部电压V1输入该支路，该外部电压V1为高电位电压，例如可选为5V，第五电阻R5的第二端接地，则第五电阻R5的第一端处于高电位，即点C处于高电位，MOS晶体管Q1的栅极连接于点C，同样处于高电位，MOS晶体管Q1导通，第三电阻R3所在的支路导通，第三电阻R3与第二电阻R2并联；同时，指示灯D1点亮，指示开关控制单元121处于导通状态，进而指示该状态对应的驱动电路的输出电压状态。\n\n[0038]相反的，当拨码开关S1断开时，第四电阻R4、指示灯D1、拨码开关S1和第五电阻R5相互串联形成的支路断开，第五电阻R5的第二端接地，则第五电阻R5的第一端为接地电位，即点C处于地电位，MOS晶体管Q1的栅极连接于点C，同样处于地电位，MOS晶体管Q1断开，第三电阻R3所在的支路断接；同时，指示灯D1不点亮，指示开关控制单元121处于断开状态，进而指示该状态对应的驱动电路的输出电压状态。\n\n[0039]在本实施例中，MOS晶体管Q1也可以为P型晶体管，相对应的，第四电阻R4的第一端接地，第五电阻R5的第二端接入外部低电位电压。\n\n[0040]在本实施例中，第四电阻R4、指示灯D1也可以选择性的去除其中任意一个或两个，且不影响整个开关控制单元121的正常运行。\n\n[0041]在本实施例中，开关控制单元121也可以直接采用拨码开关替代，该拨码开关的第一端与第三电阻的第二端连接，第二端接地。当拨码开关闭合时，第三电阻R3所在的支路导通，第三电阻R3与第二电阻R2并联；当拨码开关断开时，第三电阻R3所在的支路断接。\n\n[0042]当驱动电路处于第一状态时，开关控制单元121断开，第三电阻R3所在的支路断接，第一电阻R1和第二电阻R2串联。驱动电路的输出电压Vout1为：\n\n[0043]Vout1＝VB(1+R1/R2)\n\n[0044]其中，VB为第二电阻R2的第一端的电压，R1为第一电阻R1的电阻值，R2为第二电阻R2的电阻值。VB通常为一固定电压值，如0.6V。\n\n[0045]当驱动电路处于第二状态时，开关控制单元121导通，第三电阻R3所在的支路导通，第二电阻R2和第三电阻R3并联后与第一电阻R1串联。驱动电路的输出电压Vout2为：\n\n[0046]Vout2＝VB(1+R1×(R2+R3)/(R2×R3))\n\n[0047]其中，VB为第二电阻R2的第一端的电压，R1为第一电阻R1的电阻值，R2为第二电阻R2的电阻值，R3为第三电阻R3的电阻值。VB通常为一固定电压值，如0.6V。\n\n[0048]由上述公式可知，驱动电路在第二状态下的输出电压Vout2比在第一状态下的输出电压Vout1大。在本发明实施例中，第三电阻R3可以是定值电阻，也可以是滑动电阻器。当第三电阻R3为定值电阻时，可以固定调节第二状态时驱动电路的输出电压Vout2；当第三电阻R3为滑动电阻器时，可以根据具体的需要，在一定范围内调节第二状态时驱动电路的输出电压Vout2。\n\n[0049]当驱动电路处于第一状态时，显示面板处于一般状态，此时驱动电路的输出电压Vout1为正常输出电压。当驱动电路处于第二状态时，显示面板处于点灯测试状态，此时驱动电路的输出电压Vout2为点灯测试电压，点灯测试电压比正常输出电压高，即本发明实施例提供的驱动电路提高了点灯测试过程中的测试电压，使得mini LED灯板的细微损伤能够在点灯测试过程中及时暴露出来，有利于及时剔除残次品，提高出货品质，降低客诉或退货现象的发生。\n\n[0050]在另一种实施例中，请参照图2，驱动电路包括电源控制模块110、输出控制模块120和稳压模块130，电源控制模块110的输入端接入外部输入电压V0，电源控制模块110的第一输出端与稳压模块130的第一端连接，电源控制模块110的第二输出端与输出控制模块120的第一输入端连接，电源控制模块110的第三输出端与输出控制模块120的第二输入端连接，且与驱动电路的输出端连接于点E，稳压模块130的第二端与输出控制模块120连接于点A且接地。\n\n[0051]其中，电源控制模块110包括电源控制芯片，电源控制芯片用于控制电源控制模块110的输出电压，具体的将正向的外部输入电压V0转换为负向电压输出至输出控制模块120。\n\n[0052]稳压模块130包括电容C1和电感L1，电容C1的第一端与电源控制模块110的第一输出端连接，电容C1的第二端与电感L1的第一端连接，电感L1的第二端与输出控制模块120连接于点A且接地，稳压模块130采用电容C1和电感L1共同过滤输出控制模块120的电压中的杂波，从而保证驱动电路输出电压的稳定性。\n\n[0053]输出控制模块120用于控制驱动电路输出电压Vout的大小，输出控制模块120包括第一电阻R1、第二电阻R2、第三电阻R3和开关控制单元121。其中，第一电阻R1的第一端连接于点A，即第一电阻R1的第一端接地，第一电阻R1的第二端、第二电阻R2的第一端和第三电阻R3的第一端连接于点B，即与输出控制模块120的第一输入端、电源控制模块110的第一输出端连接，第三电阻R3的第二端与开关控制单元121的第一端连接，第二电阻R2的第二端、开关控制单元121的第二端连接于点E，即与电源控制模块110的第三输出端、输出控制模块120的第二输入端和驱动电路的输出端连接，开关控制单元121的第三端接地。\n\n[0054]进一步，开关控制单元121包括MOS晶体管Q1、第四电阻R4、指示灯D1、拨码开关S1、以及第五电阻R5。其中，MOS晶体管Q1的第一端与开关控制单元121的第一端连接，即与第三电阻R3的第二端连接，MOS晶体管Q1的第二端连接于点E，即与开关控制单元121的第二端、第二电阻R2的第二端连接；第四电阻R4的第一端接地，第四电阻R4的第二端与指示灯D1的第一端连接，指示灯D1的第二端与拨码开关S1的第一端连接，拨码开关S1的第二端与第五电阻R5的第一端连接，第五电阻R5的第二端连接于点E，即与开关控制单元121的第二端连接，MOS晶体管Q1的栅极与指示灯D1的第二端、拨码开关S1的第一端连接于点C。\n\n[0055]其中，第三电阻R3的第一端与第二电阻R2的第一端连接，第三电阻R3的第二端通过开关控制单元121与第二电阻R2的第二端连接，当开关控制单元121导通时，第三电阻R3的第一端的电压与第二电阻R2的第一端电压保持一致，第三电阻R3的第二端的电压与第二电阻R2的第一端的电压保持一致，可视为第三电阻R3与第二电阻R2并联；当开关控制单元121断开时，第三电阻R3所在的支路为断路。\n\n[0056]又由于R1和R2均为定值电阻，R1和R2通过串联分压以决定驱动电路输出电压的大小，通过开关控制单元121控制第三电阻R3所在支路的导通状态，从而控制第三电阻R3与第二电阻R2的并联状态，可以调节第二电阻R2两端的分压大小，从而调节第一电阻R1两端的分压大小，进而调节驱动电路的输出电压Vout的大小。\n\n[0057]开关控制单元121的导通状态由MOS晶体管Q1的导通状态决定，MOS晶体管Q1的栅极电压由第四电阻R4、指示灯D1、拨码开关S1和第五电阻R5相互串联形成的支路控制。在本实施例中，MOS晶体管Q1为P型晶体管，当MOS晶体管Q1的栅极处于低电位时，MOS晶体管Q1导通，当MOS晶体管Q1的栅极处于高电位时，MOS晶体管Q1断开。\n\n[0058]当拨码开关S1闭合时，第四电阻R4、指示灯D1、拨码开关S1和第五电阻R5相互串联形成的支路导通，电源控制模块110的第三输出端向输出控制模块120输入低电位的负向电压，第四电阻R4的第一端接地，则第四电阻R4的第二端处于负向的低电位，则点C处于负向的低电位，MOS晶体管Q1的栅极连接于点C，同样处于负向的低电位，MOS晶体管Q1导通，第三电阻R3所在的支路导通，第三电阻R3与第二电阻R2并联；同时，指示灯D1点亮，指示开关控制单元121处于导通状态，进而指示该状态对应的驱动电路的输出电压状态。\n\n[0059]相反的，当拨码开关S1断开时，第四电阻R4、指示灯D1、拨码开关S1和第五电阻R5相互串联形成的支路断开，第四电阻R4的第一端接地，则第四电阻R4的第一端为接地电位，即点C处于地电位，MOS晶体管Q1的栅极连接于点C，同样处于地电位，MOS晶体管Q1断开，第三电阻R3所在的支路断接；同时，指示灯D1不点亮，指示开关控制单元121处于断开状态，进而指示该状态对应的驱动电路的输出电压状态。\n\n[0060]在本实施例中，第五电阻R5、指示灯D1也可以选择性的去除其中任意一个或两个，且不影响整个开关控制单元121的正常运行。\n\n[0061]在本实施例中，开关控制单元121也可以直接采用拨码开关替代，该拨码开关的第一端与第三电阻的第二端连接，第二端接地。当拨码开关闭合时，第三电阻R3所在的支路导通，第三电阻R3与第二电阻R2并联；当拨码开关断开时，第三电阻R3所在的支路断接。\n\n[0062]当驱动电路处于第一状态时，开关控制单元121断开，第三电阻R3所在的支路断接，第一电阻R1和第二电阻R2串联。驱动电路的输出电压Vout1为：\n\n[0063]Vout1＝VB(1+R1/R2)\n\n[0064]其中，VB为第二电阻R2的第一端的电压，R1为第一电阻R1的电阻值，R2为第二电阻R2的电阻值。VB通常为一固定电压值，如-0.6V。\n\n[0065]当驱动电路处于第二状态时，开关控制单元121导通，第三电阻R3所在的支路导通，第二电阻R2和第三电阻R3并联后与第一电阻R1串联。驱动电路的输出电压Vout2为：\n\n[0066]Vout2＝VB(1+R1×(R2+R3)/(R2×R3))\n\n[0067]其中，VB为第二电阻R2的第一端的电压，R1为第一电阻R1的电阻值，R2为第二电阻R2的电阻值，R3为第三电阻R3的电阻值。VB通常为一固定电压值，如-0.6V。\n\n[0068]由上述公式可知，驱动电路在第二状态下的输出电压Vout2的绝对值比在第一状态下的输出电压Vout1的绝对值大。在本发明实施例中，第三电阻R3可以是定值电阻，也可以是滑动电阻器。当第三电阻R3为定值电阻时，可以固定调节第二状态时驱动电路的输出电压Vout2；当第三电阻R3为滑动电阻器时，可以根据具体的需要，在一定范围内调节第二状态时驱动电路的输出电压Vout2。\n\n[0069]当驱动电路处于第一状态时，显示面板处于一般状态，此时驱动电路的输出电压Vout1为正常输出电压。当驱动电路处于第二状态时，显示面板处于点灯测试状态，此时驱动电路的输出电压Vout2为点灯测试电压，点灯测试电压比正常输出电压高，即本发明实施例提供的驱动电路提高了点灯测试过程中的测试电压，使得mini LED灯板的细微损伤能够在点灯测试过程中及时暴露出来，有利于及时剔除残次品，提高出货品质，降低客诉或退货现象的发生。\n\n[0070]相应的，本发明实施例还提供一种显示装置，该显示装置包括本发明实施例提供的任意一种驱动电路，具备本发明实施例提供的任意一种驱动电路的技术特征和技术效果，具体实施方式及工作原理请参照上述具体实施例，在此不再赘述。\n\n[0071]综上所述，本发明实施例提供一种驱动电路及显示装置，该驱动电路包括：电源控制模块和输出控制模块，电源控制模块的输出端与输出控制模块的输入端连接，输出控制模块包括第一电阻、第二电阻、第三电阻和开关控制单元，开关控制单元与第三电阻串联后与所述二电阻并联，然后再与第一电阻串联；当驱动电路处于第一状态时，开关控制单元断开，第三电阻所在的支路断接，第一电阻和第二电阻串联，驱动电路输出电压Vout1；当驱动电路处于第二状态时，开关控制单元导通，第三电阻所在的支路导通，第三电阻与第二电阻并联后与第一电阻串联，驱动电路输出电压Vout2；Vout2的绝对值大于Vout1的绝对值。本发明实施例通过在驱动电路中设置开关控制单元，在显示面板处于点灯测试状态时，驱动电路处于第二状态时，驱动电路输出比正常输出电压更高的点灯测试电压，提高了点灯测试过程中的测试电压，使得mini LED灯板的细微损伤能够在点灯测试过程中及时暴露出来，有利于及时剔除残次品，提高出货品质，降低客诉或退货现象的发生。\n\n[0072]以上对本发明实施例所提供的一种驱动电路及显示装置进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10930, 23984, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种微型发光二极管背光驱动组件和显示面板。\n\n背景技术\n\n[0002]传统MiniLED背光灯板驱动装置包括灯板、FPC、驱动板以及转接板，其中，灯板与FPC连接，FPC与驱动板连接，驱动板与转接板连接，由于MiniLED所需的光源驱动能力更强，因此驱动板的IC需要足够多来驱动灯板达到预期亮度。而灯板通过驱动板连接转接板，由于驱动板的制作成本很高，所以，导致产品的成本较高，且导致显示面板厚度较厚。\n\n[0003]因此，提供一种能够降低生产成本和显示面板厚度的微型发光二极管背光驱动组件，成为本领域技术人员亟待解决的技术问题。\n\n发明内容\n\n[0004]本申请实施例提供一种微型发光二极管背光驱动组件和显示面板，能够降低生产成本和显示面板厚度。\n\n[0005]本申请实施例提供一种微型发光二极管背光驱动组件，包括：\n\n[0006]灯板；\n\n[0007]柔性电路板，所述柔性电路板设置在所述灯板的一端端部，所述柔性电路板包括第一连接部、安装部以及第二连接部，所述安装部一端与所述第一连接部连接、另一端与所述第二连接部连接，所述第一连接部与所述灯板连接；\n\n[0008]集成电路板，设置在所述安装部上；\n\n[0009]转接板，与所述第二连接部远离所述灯板的一侧连接。\n\n[0010]在一些实施例中，所述第一连接部包括至少两个，所述第一连接部一端与所述灯板连接，另一端与所述安装部连接，所述第一连接部与第一连接部之间具有间隙。\n\n[0011]在一些实施例中，所述第一连接部包括至少三个，所述第一连接部与所述第一连接部之间的间距相同。\n\n[0012]在一些实施例中，所述集成电路板的数量与所述第一连接部的数量对应。\n\n[0013]在一些实施例中，所述集成电路板设置在与所述第一连接部对应的位置。\n\n[0014]在一些实施例中，所述第二连接部与所述安装部的中间位置连接。\n\n[0015]在一些实施例中，所述第二连接部宽度从安装部朝向所述转接板逐渐减小。\n\n[0016]在一些实施例中，所述灯板上设置有微型发光二极管，所述微型发光二极管阵列设置。\n\n[0017]在一些实施例中，所述第一连接部、安装部以及第二连接部一体成型。\n\n[0018]本申请实施例还提供一种显示面板，包括以上所述的微型发光二极管背光驱动组件。\n\n[0019]本申请实施例所提供的微型发光二极管背光驱动组件和显示面板，微型发光二极管背光驱动组件包括灯板、柔性电路板、集成电路板以及转接板。所述柔性电路板设置在所述灯板的一端端部，所述柔性电路板包括第一连接部、安装部以及第二连接部，所述安装部一端与所述第一连接部连接、另一端与所述第二连接部连接，所述第一连接部与所述灯板连接，集成电路板设置在所述安装部上，转接板与所述第二连接部远离所述灯板的一侧连接。由于本申请将集成电路板设置在柔性电路板上的安装部上，这样的结构有利于整机组装，降低显示面板厚度，优化背光驱动组件，同时也可节省背光驱动组件的成本。\n\n附图说明\n\n[0020]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0021]图1为本申请实施例提供的微型发光二极管背光驱动组件的结构示意图。\n\n[0022]图2为本申请实施例提供的显示面板的结构示意图。\n\n具体实施方式\n\n[0023]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0024]需要说明的是，在本申请的描述中，需要理解的是，术语“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。\n\n[0025]本申请实施例提供一种微型发光二极管背光驱动组件和显示面板，以下对微型发光二极管背光驱动组件做详细介绍。\n\n[0026]请参阅图1所示，图1为本申请实施例提供的微型发光二极管背光驱动组件结构示意图。其中，微型发光二极管背光驱动组件10包括灯板11、柔性电路板12、集成电路板13以及转接板14。所述柔性电路板12设置在所述灯板11的一端端部，所述柔性电路板12包括第一连接部121、安装部122以及第二连接部123，所述安装部122一端与所述第一连接部121连接、另一端与所述第二连接部123连接，所述第一连接部121与所述灯板11连接，集成电路板13设置在所述安装部122上，转接板14与所述第二连接部123远离所述灯板11的一侧连接。\n\n[0027]需要说明的是，灯板11上可以设置多个微型发光二极管111，微型发光二极管111发光效率好，且能耗较低。柔性电路板12为具有柔性弯折效果的电路板，柔性电路板12的材料可以采用聚酰亚胺、聚酯薄膜等。另外的，集成电路板13可以为微型发光二极管111提供电流补偿的作用。转接板14可以用于测试。\n\n[0028]其中，所述第一连接部121包括至少两个，所述第一连接部121一端与所述灯板11连接，另一端与所述安装部122连接，所述第一连接部121与第一连接部121之间具有间隙15。可以理解的是，第一连接部121可以包括两个、三个甚至多个，本申请实施例对第一连接部121的具体数量不做过多赘述。另外的，第一连接部121均连接在安装部122的同一侧。第一连接部121和第一连接部121之间具有间隙15，这样能够节省柔性电路板12的材料，进一步的减少成本。\n\n[0029]其中，所述第一连接部121包括至少三个，所述第一连接部121与所述第一连接部121之间的间距相同。可以理解的是，第一连接部121可以包括三个、四个甚至多个。第一连接部121和第一连接部121之间的间距相等，这样可以使得第一连接部121的受力均匀，使得柔性电路板12不容易折断。\n\n[0030]其中，所述集成电路板13的数量与所述第一连接部121的数量对应。当然，集成电路板13的数量也可以不用与第一连接部121的数量对应。集成电路板13的数量与第一连接部121的数量对应，这种结构是因为在确定设置多个第一连接部121，第一连接部121之间有间距，减少了生产成本的基础上，更容易的在安装部122上对集成电路板13进行布局。另外的，本申请实施例的中集成电路板13可以驱动芯片。\n\n[0031]其中，所述集成电路板13设置在与所述第一连接部121对应的位置。可以理解的是，这种结构能够方便集成电路板13的设计和布局。\n\n[0032]其中，所述第二连接部123与所述安装部122的中间位置连接。当然，第二连接部123可以与安装部122的其他位置连接。第二连接部123的设置的位置可以根据显示面板100中具体布局做相应的调整。\n\n[0033]其中，所述第二连接部123宽度从安装部122朝向所述转接板14逐渐减小。当然，第二连接部123还可以是其他形状，比如长条形。\n\n[0034]其中，所述灯板11上设置有微型发光二极管111，所述微型发光二极管111阵列设置。当然，微型发光二极管111也可以不需要采用阵列设置的方式。可以理解的是，微型发光二极管111阵列设置可以使得发光更加均匀。\n\n[0035]其中，所述第一连接部121、安装部122以及第二连接部123一体成型。可以理解的是，第一连接部121、安装部122以及第二连接部123一体成型，这样能够减少生产工序，降低生产成本。\n\n[0036]本申请实施例所提供的微型发光二极管背光驱动组件10包括灯板11、柔性电路板12、集成电路板13以及转接板14。所述柔性电路板12设置在所述灯板11的一端端部，所述柔性电路板12包括第一连接部121、安装部122以及第二连接部123，所述安装部122一端与所述第一连接部121连接、另一端与所述第二连接部123连接，所述第一连接部121与所述灯板11连接，集成电路板13设置在所述安装部122上，转接板14与所述第二连接部123远离所述灯板11的一侧连接。由于本申请将集成电路板13设置在柔性电路板12上的安装部122上，这样的结构有利于整机组装，降低显示面板100厚度，优化背光驱动组件，同时也可节省背光驱动组件的成本。\n\n[0037]请参阅图2，图2为本申请实施例提供的显示面板的结构示意图。本申请实施例还提供一种显示面板100包括以上所述的微型发光二极管背光驱动组件10。由于上述实施例中已经对微型发光二极管背光驱动组件10进行了详细的描述，因此，本申请实施例中不对微型发光二极管背光驱动组件10做过多的赘述。由于本申请实施例中的显示面板100采用了上述实施例中的微型发光二极管背光驱动组件10，因此，将集成电路板13设置在柔性电路板12上的安装部122上，这样的结构有利于整机组装，降低显示面板100厚度，优化背光驱动组件，同时也可节省背光驱动组件的成本。\n\n[0038]本申请实施例提供的一种显示面板100，其可以为手机、平板电脑、笔记本、游戏机、数码相机、车载导航仪、电子广告牌、自动取款机等具有显示功能的电子设备。显示面板100包括本申请所提供的显示面板中所需的部件，例如背光模组，胶框、边框、上下偏光片、摄像头等。\n\n[0039]本申请不限定显示面板100的类型，其可以为垂直电场型液晶显示面板，例如扭曲向列(twisted nematic，TN)型液晶显示面板，多畴垂直配向(Multi-domain VerticalAlignment，MVA)型液晶显示面板，也可以是水平电场型液晶显示面板，例如边缘场开关(Fringe Field Switching，FFS)型液晶显示面板或者面内转换(In-Plane Switching，IPS)型液晶显示面板。\n\n[0040]以上对本申请实施例提供的微型发光二极管背光驱动组件和显示面板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种微型发光二极管背光驱动组件和显示面板。\n\n背景技术\n\n[0002]传统MiniLED背光灯板驱动装置包括灯板、FPC、驱动板以及转接板，其中，灯板与FPC连接，FPC与驱动板连接，驱动板与转接板连接，由于MiniLED所需的光源驱动能力更强，因此驱动板的IC需要足够多来驱动灯板达到预期亮度。而灯板通过驱动板连接转接板，由于驱动板的制作成本很高，所以，导致产品的成本较高，且导致显示面板厚度较厚。\n\n[0003]因此，提供一种能够降低生产成本和显示面板厚度的微型发光二极管背光驱动组件，成为本领域技术人员亟待解决的技术问题。\n\n发明内容\n\n[0004]本申请实施例提供一种微型发光二极管背光驱动组件和显示面板，能够降低生产成本和显示面板厚度。\n\n[0005]本申请实施例提供一种微型发光二极管背光驱动组件，包括：\n\n[0006]灯板；\n\n[0007]柔性电路板，所述柔性电路板设置在所述灯板的一端端部，所述柔性电路板包括第一连接部、安装部以及第二连接部，所述安装部一端与所述第一连接部连接、另一端与所述第二连接部连接，所述第一连接部与所述灯板连接；\n\n[0008]集成电路板，设置在所述安装部上；\n\n[0009]转接板，与所述第二连接部远离所述灯板的一侧连接。\n\n[0010]在一些实施例中，所述第一连接部包括至少两个，所述第一连接部一端与所述灯板连接，另一端与所述安装部连接，所述第一连接部与第一连接部之间具有间隙。\n\n[0011]在一些实施例中，所述第一连接部包括至少三个，所述第一连接部与所述第一连接部之间的间距相同。\n\n[0012]在一些实施例中，所述集成电路板的数量与所述第一连接部的数量对应。\n\n[0013]在一些实施例中，所述集成电路板设置在与所述第一连接部对应的位置。\n\n[0014]在一些实施例中，所述第二连接部与所述安装部的中间位置连接。\n\n[0015]在一些实施例中，所述第二连接部宽度从安装部朝向所述转接板逐渐减小。\n\n[0016]在一些实施例中，所述灯板上设置有微型发光二极管，所述微型发光二极管阵列设置。\n\n[0017]在一些实施例中，所述第一连接部、安装部以及第二连接部一体成型。\n\n[0018]本申请实施例还提供一种显示面板，包括以上所述的微型发光二极管背光驱动组件。\n\n[0019]本申请实施例所提供的微型发光二极管背光驱动组件和显示面板，微型发光二极管背光驱动组件包括灯板、柔性电路板、集成电路板以及转接板。所述柔性电路板设置在所述灯板的一端端部，所述柔性电路板包括第一连接部、安装部以及第二连接部，所述安装部一端与所述第一连接部连接、另一端与所述第二连接部连接，所述第一连接部与所述灯板连接，集成电路板设置在所述安装部上，转接板与所述第二连接部远离所述灯板的一侧连接。由于本申请将集成电路板设置在柔性电路板上的安装部上，这样的结构有利于整机组装，降低显示面板厚度，优化背光驱动组件，同时也可节省背光驱动组件的成本。\n\n附图说明\n\n[0020]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0021]图1为本申请实施例提供的微型发光二极管背光驱动组件的结构示意图。\n\n[0022]图2为本申请实施例提供的显示面板的结构示意图。\n\n具体实施方式\n\n[0023]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0024]需要说明的是，在本申请的描述中，需要理解的是，术语“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。\n\n[0025]本申请实施例提供一种微型发光二极管背光驱动组件和显示面板，以下对微型发光二极管背光驱动组件做详细介绍。\n\n[0026]请参阅图1所示，图1为本申请实施例提供的微型发光二极管背光驱动组件结构示意图。其中，微型发光二极管背光驱动组件10包括灯板11、柔性电路板12、集成电路板13以及转接板14。所述柔性电路板12设置在所述灯板11的一端端部，所述柔性电路板12包括第一连接部121、安装部122以及第二连接部123，所述安装部122一端与所述第一连接部121连接、另一端与所述第二连接部123连接，所述第一连接部121与所述灯板11连接，集成电路板13设置在所述安装部122上，转接板14与所述第二连接部123远离所述灯板11的一侧连接。\n\n[0027]需要说明的是，灯板11上可以设置多个微型发光二极管111，微型发光二极管111发光效率好，且能耗较低。柔性电路板12为具有柔性弯折效果的电路板，柔性电路板12的材料可以采用聚酰亚胺、聚酯薄膜等。另外的，集成电路板13可以为微型发光二极管111提供电流补偿的作用。转接板14可以用于测试。\n\n[0028]其中，所述第一连接部121包括至少两个，所述第一连接部121一端与所述灯板11连接，另一端与所述安装部122连接，所述第一连接部121与第一连接部121之间具有间隙15。可以理解的是，第一连接部121可以包括两个、三个甚至多个，本申请实施例对第一连接部121的具体数量不做过多赘述。另外的，第一连接部121均连接在安装部122的同一侧。第一连接部121和第一连接部121之间具有间隙15，这样能够节省柔性电路板12的材料，进一步的减少成本。\n\n[0029]其中，所述第一连接部121包括至少三个，所述第一连接部121与所述第一连接部121之间的间距相同。可以理解的是，第一连接部121可以包括三个、四个甚至多个。第一连接部121和第一连接部121之间的间距相等，这样可以使得第一连接部121的受力均匀，使得柔性电路板12不容易折断。\n\n[0030]其中，所述集成电路板13的数量与所述第一连接部121的数量对应。当然，集成电路板13的数量也可以不用与第一连接部121的数量对应。集成电路板13的数量与第一连接部121的数量对应，这种结构是因为在确定设置多个第一连接部121，第一连接部121之间有间距，减少了生产成本的基础上，更容易的在安装部122上对集成电路板13进行布局。另外的，本申请实施例的中集成电路板13可以驱动芯片。\n\n[0031]其中，所述集成电路板13设置在与所述第一连接部121对应的位置。可以理解的是，这种结构能够方便集成电路板13的设计和布局。\n\n[0032]其中，所述第二连接部123与所述安装部122的中间位置连接。当然，第二连接部123可以与安装部122的其他位置连接。第二连接部123的设置的位置可以根据显示面板100中具体布局做相应的调整。\n\n[0033]其中，所述第二连接部123宽度从安装部122朝向所述转接板14逐渐减小。当然，第二连接部123还可以是其他形状，比如长条形。\n\n[0034]其中，所述灯板11上设置有微型发光二极管111，所述微型发光二极管111阵列设置。当然，微型发光二极管111也可以不需要采用阵列设置的方式。可以理解的是，微型发光二极管111阵列设置可以使得发光更加均匀。\n\n[0035]其中，所述第一连接部121、安装部122以及第二连接部123一体成型。可以理解的是，第一连接部121、安装部122以及第二连接部123一体成型，这样能够减少生产工序，降低生产成本。\n\n[0036]本申请实施例所提供的微型发光二极管背光驱动组件10包括灯板11、柔性电路板12、集成电路板13以及转接板14。所述柔性电路板12设置在所述灯板11的一端端部，所述柔性电路板12包括第一连接部121、安装部122以及第二连接部123，所述安装部122一端与所述第一连接部121连接、另一端与所述第二连接部123连接，所述第一连接部121与所述灯板11连接，集成电路板13设置在所述安装部122上，转接板14与所述第二连接部123远离所述灯板11的一侧连接。由于本申请将集成电路板13设置在柔性电路板12上的安装部122上，这样的结构有利于整机组装，降低显示面板100厚度，优化背光驱动组件，同时也可节省背光驱动组件的成本。\n\n[0037]请参阅图2，图2为本申请实施例提供的显示面板的结构示意图。本申请实施例还提供一种显示面板100包括以上所述的微型发光二极管背光驱动组件10。由于上述实施例中已经对微型发光二极管背光驱动组件10进行了详细的描述，因此，本申请实施例中不对微型发光二极管背光驱动组件10做过多的赘述。由于本申请实施例中的显示面板100采用了上述实施例中的微型发光二极管背光驱动组件10，因此，将集成电路板13设置在柔性电路板12上的安装部122上，这样的结构有利于整机组装，降低显示面板100厚度，优化背光驱动组件，同时也可节省背光驱动组件的成本。\n\n[0038]本申请实施例提供的一种显示面板100，其可以为手机、平板电脑、笔记本、游戏机、数码相机、车载导航仪、电子广告牌、自动取款机等具有显示功能的电子设备。显示面板100包括本申请所提供的显示面板中所需的部件，例如背光模组，胶框、边框、上下偏光片、摄像头等。\n\n[0039]本申请不限定显示面板100的类型，其可以为垂直电场型液晶显示面板，例如扭曲向列(twisted nematic，TN)型液晶显示面板，多畴垂直配向(Multi-domain VerticalAlignment，MVA)型液晶显示面板，也可以是水平电场型液晶显示面板，例如边缘场开关(Fringe Field Switching，FFS)型液晶显示面板或者面内转换(In-Plane Switching，IPS)型液晶显示面板。\n\n[0040]以上对本申请实施例提供的微型发光二极管背光驱动组件和显示面板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10931, 23985, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种三维触控传感器及显示装置。\n\n背景技术\n\n[0002]随着显示技术的发展，越来越多的功能集成于显示器件中，也同步赋予了显示器件新的作用。触控传感器作为感应人触摸的传感器器件，是显示器件中重要的人机交互的桥梁，使得在显示器件中应用触控技术变得越来越广泛。\n\n[0003]较早期的显示面板中的触控传感器主要在于通过二维的坐标识别确定触摸力的位置，而不能感受触摸力的大小，即无法起到三维触控的效果。而目前的显示面板中的触控传感器在上层电极层设置压力接收电极以及在下层电极层设置压力感应电极，压力接收电极和压力感应电极相对设置。由此通过采集压力接收电极和压力感应电极之间形成的电容的变化，来确定触摸力的位置和大小，从而实现三维触控的效果。但是，目前的三维触控传感器由于通过压力接收电极和压力感应电极之间形成的单一电容的变化来同时确定触摸力的位置和大小，使得触控精度较低，信噪比较低，以及多点触控时效果欠佳。\n\n[0004]因此，有必要提出一种三维触控传感器及显示装置，将压力触控技术应用于目前的触控传感器中，以使得目前的触控传感器能准确确定触摸力的位置和大小，保证触控精度，使得显示装置更好地支持多点触控。\n\n发明内容\n\n[0005]为了解决目前显示面板中的触控传感器由于通过压力接收电极和压力感应电极之间形成的单一电容的变化来同时确定触摸力的位置和大小，使得触控精度较低，信噪比较低，以及多点触控时效果欠佳的问题，本申请实施例提供一种三维触控传感器及显示装置，以准确确定触摸力的位置和大小，保证触控精度，使得显示装置更好地支持多点触控。\n\n[0006]第一方面，本申请提供一种三维触控传感器，包括异面设置的第一电极层和第二电极层，所述第二电极层在与所述第一电极层相对的方向上可产生形变；\n\n[0007]所述第一电极层包括：\n\n[0008]阵列设置的发射电极，在第一方向上，相邻的所述发射电极电性连接；\n\n[0009]阵列设置的压力感应电极，在所述第一方向上，相邻的所述压力感应电极电性连接，且所述压力感应电极和所述发射电极错位分布且互相绝缘；\n\n[0010]所述第二电极层包括：\n\n[0011]阵列设置的压力接收电极，在第二方向上，相邻的所述压力接收电极电性连接，所述第二方向与所述第一方向互相垂直；\n\n[0012]其中，所述压力接收电极与所述压力感应电极对位设置，且所述压力接收电极与所述发射电极错位设置。\n\n[0013]在一些实施例中，所述第二电极层包括形变支撑层和钝化层，所述形变支撑层设于所述第一电极层和所述钝化层之间，所述压力接收电极设于所述钝化层之中。\n\n[0014]在一些实施例中，所述形变支撑层内还设置有第一间隙物和第二间隙物，所述第一间隙物设于所述发射电极和所述压力接收电极之间，所述第二间隙物设于所述压力感应电极和所述压力接收电极之间，且所述第二间隙物的高度小于所述第一间隙物的高度。\n\n[0015]在一些实施例中，所述发射电极和所述压力感应电极之间分布有绝缘材料。\n\n[0016]在一些实施例中，所述压力接收电极的面积大于所述压力感应电极的面积。\n\n[0017]在一些实施例中，所述发射电极、所述压力感应电极和所述压力接收电极的形状为菱形、方形或六角形。\n\n[0018]第二方面，本申请还提供一种显示装置，包括显示面板，以及如上所述的三维触控传感器，所述三维触控传感器设于所述显示面板的正侧；当所述显示面板受到触控力时，所述发射电极和所述压力接收电极用于形成第一电容以确定所述触控力的位置；所述压力感应电极和所述压力接收电极用于形成第二电容以确定所述触控力的大小。\n\n[0019]在一些实施例中，所述三维触控传感器还包括阵列基板，所述阵列基板设置于所述三维触控传感器的第一电极层靠近所述显示面板的一侧。\n\n[0020]在一些实施例中，所述三维触控传感器还包括封装盖板，所述封装盖板设置于所述三维触控传感器的第二电极层远离所述显示面板的一侧。\n\n[0021]在一些实施例中，所述显示面板为液晶显示面板，OLED显示面板，mini-LED显示面板或Micro-LED显示面板。\n\n[0022]本申请实施例提供一种三维触控传感器及显示装置，该三维触控传感器通过在第一电极层设置错位分布且互相绝缘的压力感应电极和发射电极，以及在第二电极层设置压力接收电极，并将压力接收电极与压力感应电极对位设置而与发射电极错位设置，使得压力接收电极与发射电极之间形成第一电容，以及压力接收电极与压力感应电极之间形成第二电容，从而通过压力接收电极与发射电极之间形成的第一电容的变化来确定触控力的位置，而通过压力接收电极与压力感应电极之间形成的第二电容的变化来确定触控力的大小，由此分别通过第一电容的变化和第二电容的变化确定触控力的位置和大小。相比于现有技术仅通过压力接收电极和压力感应电极之间形成的单一电容的变化来同时确定触摸力的位置和大小，本申请实施例提供的三维触控传感器能提高触控精度，使得显示装置能更好地支持多点触控。\n\n附图说明\n\n[0023]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0024]图1为本申请实施例提供的三维触控传感器的剖视图。\n\n[0025]图2为本申请实施例提供的三维触控传感器的发射电极和压力感应电极的结构示意图。\n\n[0026]图3为本申请实施例提供的压力接收电极的结构示意图。\n\n[0027]图4为本申请实施例提供的发射电极、压力感应电极和压力接收电极的俯视图。\n\n[0028]图5为本申请实施例提供的发射电极和压力接收电极的局部俯视图。\n\n[0029]图6为本申请实施例提供的压力感应电极和压力接收电极的局部俯视图。\n\n[0030]图7为本申请实施例提供的显示装置的剖面图。\n\n[0031]其中：\n\n[0032]1、三维触控传感器 10、第一电极层 101、发射电极\n\n[0033]102、压力感应电极 20、第二电极层 201、压力接收电极\n\n[0034]202、形变支撑层 2021、第一间隙物 2022、第二间隙物\n\n[0035]203、钝化层 30、阵列基板 40、封装盖板\n\n[0036]50、显示面板。\n\n具体实施方式\n\n[0037]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0038]本申请实施例的附图中，各个电极层和膜层的厚度，各个电极的大小和形状，以及间隙物的高度仅为示例，目的只是为了示意本申请各实施例的保护内容。\n\n[0039]本申请实施例提供一种三维触控传感器1，图1为本申请实施例提供的三维触控传感器的剖视图，如图1所示，三维触控传感器1包括异面设置的第一电极层10和第二电极层20，第二电极层20在与第一电极层10相对的方向上可产生形变。\n\n[0040]图2为本申请实施例提供的三维触控传感器的发射电极Tx和压力感应电极Px的结构示意图，结合图1和图2所示，第一电极层10包括：阵列设置的发射电极Tx 101，在第一方向Y上，相邻的发射电极Tx 101电性连接；阵列设置的压力感应电极Px 102，在第一方向Y上，相邻的压力感应电极Px 102电性连接，且压力感应电极Px 102和发射电极Tx 101错位分布且互相绝缘。\n\n[0041]图3为本申请实施例提供的压力接收电极Rx的结构示意图，结合图1和图3所示，第二电极层20包括：阵列设置的压力接收电极Rx 201，在第二方向X上，相邻的压力接收电极Rx 201电性连接，第二方向X与第一方向Y互相垂直。其中，压力接收电极Rx 201与压力感应电极Px 102对位设置，且压力接收电极Rx 201与发射电极Tx 101错位设置。\n\n[0042]具体地，在本实施例中，以第一电极层10设于下方，第二电极层20设于上方，第一方向Y为列，第二方向X为行为例，在第一电极层10中，每列发射电极Tx依次连接，每列压力感应电极Px依次连接，且同一行的发射电极Tx位于相邻的两行压力感应电极Px之间，同一列的发射电极Tx位于相邻的两列压力感应电极Px之间；另外，在第二电极层20中，每行压力接收电极Rx依次连接，且压力接收电极Rx与第一电极层10的压力感应电极Px对位设置而与第一电极层10的发射电极Tx错位设置。\n\n[0043]如图1所示，发射电极Tx与压力接收电极Rx之间形成第一电容C1，压力感应电极Px与压力接收电极Rx之间形成第二电容C2，当三维触控传感器1受到触控力F时，根据发射电极Tx与压力接收电极Rx之间形成的第一电容C1的变化确定触控力F的位置，根据压力感应电极Px和压力接收电极Rx之间形成的第二电容C2的变化确定触控力F的大小。\n\n[0044]具体地，结合图1和图5所示，压力接收电极Rx设于上方的第二电极层20中，发射电极Tx设于下方的第一电极层10中，发射电极Tx与压力接收电极Rx之间形成的第一电容C1由固有电容Cn1和投射电容Cm1组成，其中，固有电容Cn1由压力接收电极Rx与发射电极Tx在中间的交叠区域形成，根据电容的公式可知压力接收电极Rx和发射电极Tx之间的固有电容Cn1＝eS1/d，e为电容的介电常数保持不变，S1为组成电容的两个电极即压力接收电极Rx与发射电极Tx中间的交叠区域的面积，d1为组成电容的两个电极即压力接收电极Rx与发射电极Tx之间的垂直距离；同时，压力接收电极Rx和发射电极Tx之间的投射电容Cm1由压力接收电极Rx与发射电极Tx在非交叠区域形成。\n\n[0045]基于此，由于发射电极Tx与压力接收电极Rx错位设置，因此发射电极Tx与压力接收电极Rx之间的固有电容Cn1较小而投射电容Cm1较大，C1的变化主要由Cm1带来，Cn1的变化对C1的变化可以忽略不计，这样当三维触控传感器1受到触控力F时，C1的变化主要由Cm1决定，即C1的变化主要用来反映触控力F的位置。\n\n[0046]进一步地，结合图1和图6所示，压力接收电极Rx设于上方的第二电极层20中，压力感应电极Px设于下方的第一电极层10中，压力接收电极Rx与压力感应电极Px之间形成的第二电容C2由固有电容Cn2和投射电容Cm2(图中未示出)组成，其中，由于压力接收电极Rx与压力感应电极Px相对设置，因此压力接收电极Rx与压力感应电极Px之间的投射电容Cm2较小而固有电容Cn2较大，即，C2的变化主要由Cn2带来，Cm2的变化对C2的变化可以忽略不计，这样当三维触控传感器1受到触控力F时，C2的变化主要由Cn2决定，即C2的变化主要用来反映触控力F的大小。\n\n[0047]本申请实施例提供的三维触控传感器，将第一电极层和第二电极层异面设置且第二电极层能在与第一电极层相对的方向上产生形变，从而在三维触控传感器受到触控力时，能根据第一电极层在与第二电极层之间的电容变化获得触控力的位置和大小，具体通过在第一电极层10设置错位分布且互相绝缘的压力感应电极Px和发射电极Tx，以及在第二电极层20设置压力接收电极Rx，并将压力接收电极Rx与压力感应电极Px对位设置而与发射电极Tx错位设置，从而通过压力接收电极Rx与发射电极Tx之间形成的第一电容C1的变化确定触控力的位置，通过压力接收电极Rx与压力感应电极Px之间形成的第二电容C2的变化确定触控力的大小，由此分别通过第一电容C1的变化和第二电容C2的变化确定触控力的位置和大小。相比于现有技术仅通过压力接收电极和压力感应电极之间形成的单一电容的变化来同时确定触摸力的位置和大小，本申请实施例提供的三维触控传感器提高了触控精度，使得显示装置能更好地支持多点触控。\n\n[0048]可以理解的是，相邻的发射电极Tx和相邻的压力感应电极Px在第一电极层10上按照第一方向Y分别依次连接，而相邻的压力接收电极Rx在第二电极层20中按照与第一方向Y垂直的第二方向X依次连接，这样可以使发射电极Tx或压力感应电极Px的用于连接的走线与压力接收电极Rx用于连接的走线相互垂直，从而减少发射电极Tx或压力感应电极Px的用于连接的走线与压力接收电极Rx用于连接的走线之间的电磁干扰，以免影响第一电容C1和第二电容C2的形成，以及对于第一电容C1和第二电容C2的改变值的测量。\n\n[0049]如图1所示，第二电极层20包括形变支撑层202和钝化层203，形变支撑层202设于第一电极层10和钝化层203之间，压力接收电极Rx设于钝化层203之中。形变支撑层202一般采用透明柔性材料，如由聚二甲基硅氧烷PDMS制成，利用PDMS的柔性特性产生形变，从而使第二电极层20能在与第一电极层10相对的方向上产生形变。另外，将压力接收电极Rx设于钝化层203之中，通过钝化层203使压力接收电极Rx的表面转化为不易被氧化的状态，可以延缓压力接收电极Rx的腐蚀速度，对压力接收电极Rx起到防腐蚀的作用。\n\n[0050]如图1所示，形变支撑层202内还设置有第一间隙物2021和第二间隙物2022，第一间隙物2021设于发射电极Tx和压力接收电极Rx之间，第二间隙物2022设于压力感应电极Px和压力接收电极Rx之间，且第二间隙物2022的高度小于第一间隙物2021的高度。其中，第一间隙物2021用于保持压力接收电极Rx和发射电极Tx之间的距离不变，第二间隙物2022用于使压力接收电极Rx和压力感应电极Px之间保持一定的间隙，从而在三维触控传感器1受到触控力F时，压力接收电极Rx和压力感应电极Px之间的垂直距离能发生改变。\n\n[0051]具体地，图5为本申请实施例提供的发射电极Tx和压力接收电极Rx的局部俯视图，如图5所示的2个发射电极Tx1和Tx2，以及2个压力接收电极Rx1和Rx2组成的局部区域，其中，TX1与RX1之间形成的第一电容C1＝Cn1+Cm1，当三维触控传感器1受到触控力F时，第一间隙物2021使得压力接收电极Rx和发射电极Tx之间的垂直距离d1不变，而压力接收电极Rx与发射电极Tx之间的交叠区域(中间的各自用于连接的走线上的重合区域)的面积S也不变，这样压力接收电极Rx和发射电极Tx之间的固有电容Cn1的电容值保持不变，而此时压力接收电极Rx和发射电极Tx之间的投射电容Cm1会由于手的触摸发生变化，从而使第一电容C1发生变化，由此可以根据第一电容C1的变化确定触控力的位置。\n\n[0052]需要说明的是，投射电容Cm1的改变量△Cm1达到第一电容C1的10％比例以上时才能被检测出来，因此，压力接收电极Rx和发射电极Tx之间的交叠面积不能过大，即压力接收电极Rx和发射电极Tx相对设置，仅在中间的各自用于连接的走线上的重合区域交叠，否则会使得压力接收电极Rx和发射电极Tx之间的固有电容Cn1过大，这样第一电容C1也会变大，导致压力接收电极Rx和发射电极Tx之间的投射电容Cm1的改变量△Cm1占第一电容C1的比例会变小，压力接收电极Rx和发射电极Tx之间的投射电容Cm1的改变量△Cm1不易被检测出来，由此根据第一电容C1的电容值的变化确定触控力的位置的准确性不高。\n\n[0053]进一步地，图6为本申请实施例提供的压力感应电极Px和压力接收电极Rx的局部俯视图(图6所示为压力接收电极Rx的面积大于压力感应电极Px的面积的情况)，如图6所示的2个压力感应电极Px1和PX2，以及2个压力接收电极Rx1和Rx2组成的区域，其中，PX1与RX1之间或者PX2与RX2之间形成的第二电容C2＝Cn2+Cm2，当三维触控传感器1受到触控力F时，第二间隙物2022使得压力接收电极Rx和压力感应电极Px之间的垂直距离d2能够发生改变，根据电容的公式可知压力接收电极Rx与压力感应电极Px之间的固有电容Cn2＝eS2/d2，e为电容的介电常数保持不变，d2为压力接收电极Rx和压力感应电极Px之间的垂直距离，S2为压力接收电极Rx和压力感应电极Px之间的交叠面积，当三维触控传感器受到触控力F时，压力接收电极Rx和压力感应电极Px之间的交叠面积S2保持不变，压力接收电极Rx和压力感应电极Px之间的垂直距离d2则发生改变，从而使得压力接收电极Rx与压力感应电极Px之间的固有电容Cn2发生变化，即第二电容C2发生改变，由此可以根据第二电容值C2的电容值的变化确定触控力F的大小。\n\n[0054]需要说明的是，单个压力接收电极Rx的面积与单个压力感应电极Px的面积之间的大小关系不作限定，但是为了使三维触控传感器受到触控力时，手指与压力接收电极Rx的接触更充分，图4为本申请实施例提供的发射电极Tx、压力感应电极Px和压力接收电极Rx的俯视图，如图4所示，一般将压力接收电极Rx的面积设置为大于压力感应电极Px的面积，因此俯视图仅能看到压力接收电极Rx。\n\n[0055]在一些实施例中，发射电极Tx和压力感应电极Px之间分布有绝缘材料，绝缘材料用于使发射电极Tx和压力感应电极Px之间互相绝缘，防止发射电极Tx和压力感应电极Px之间形成干扰电容，影响第一电容C1和第二电容C2的形成和测量，以致于影响确定触控力F的位置和大小。其中，绝缘材料可以选取常用的绝缘材料，如氧化硅或氮化硅。\n\n[0056]在一些实施例中，发射电极Tx、压力感应电极Px和压力接收电极Rx的形状为菱形、方形或六角形，此处并不限定。\n\n[0057]需要说明的是，发射电极Tx、压力感应电极Px和压力接收电极Rx均为透明电极。\n\n[0058]图7为本申请实施例提供的显示装置的剖面图，如图7所示，本申请还提供一种显示装置2，该显示装置2包括显示面板50，以及如上所述的三维触控传感器1，三维触控传感器1设于显示面板50的正侧，可以理解的是，显示面板50的正侧是指显示面板50用于显示的一侧，这样，在三维触控传感器1受到触控力时，根据第一电容C1的变化和第二电容C2的变化确定触控力F的位置和大小后，通过显示面板50的正侧反应出触控力F的位置和大小。\n\n[0059]本申请实施例提供的显示装置2，通过在第一电极层10设置错位分布且互相绝缘的压力感应电极Px和发射电极Tx，以及在第二电极层20设置压力接收电极Rx，并将压力接收电极Rx与压力感应电极Px对位设置而与发射电极Tx错位设置，从而通过压力接收电极Rx与发射电极Tx之间形成的第一电容C1确定触控力的位置，通过压力接收电极Rx与压力感应电极Px之间形成的第二电容C2确定触控力的大小，由此分别通过第一电容C1的变化和第二电容C2的变化确定触控力的位置和大小。相比于现有技术仅通过压力接收电极和压力感应电极之间形成的单一电容的变化来同时确定触摸力的位置和大小，本申请实施例提供的三维触控传感器提高了触控精度，使得显示装置能更好地支持多点触控。\n\n[0060]其中，三维触控传感器1还包括阵列基板30，阵列基板30设置于三维触控传感器1的第一电极层10靠近显示面板50的一侧。三维触控传感器还包括封装盖板40，封装盖板40设置于三维触控传感器1的第二电极层20远离显示面板50的一侧。也即，三维触控传感器1设于显示面板50上方，三维触控传感器1和显示面板50之间通过OCA光学胶贴合在一起，其中，显示面板50、三维触控传感器1的阵列基板30、第一电极层10、第二电极层20和封装盖板40由下至上依次设置。\n\n[0061]具体地，当三维触控传感器1设置在阵列基板30上时，制作阵列基板30的衬底基板可以与三维触控传感器1的衬底基板采用同一衬底基板，阵列基板30可以采用玻璃基板、PET、PI或者CPI等柔性基板，从而使该三维触控传感器能制成柔性三维触控传感器，从而具有轻薄便携、电学性能优异和集成高等特点，可广泛应用在可穿戴电子设备、机器人、医疗机械等领域；三维触控传感器的第一电极层10为透明电极时，第一电极层10与阵列基板30上的像素电极同层设置，或与阵列基板30上的公共电极同层设置，或为单独设置的透明导电层形成的电极，当第一电极层10与阵列基板30上的像素电极同层设置，或与阵列基板30上的公共电极同层设置时，在实际生成过程中，第一电极层10可以与阵列基板30上的像素电极或阵列基板30上的公共电极同时制作，节省了工艺流程和工艺时间，降低了生产成本。同理，当三维触控传感器1的第二电极层20为透明电极时，第二电极层20也可以与阵列基板30上的像素电极同层设置，或与阵列基板30上的公共电极同层设置，或为单独设置的透明导电层形成的电极，只要符合第一电极层10和第二电极层20异层设置即可。其中，第一电极层10和第二电极层20可以为Cu、Al、Au、Pt、Ag、Mo等导电性好的金属中的一种或多种，或者这些金属形成的合金，也可以为氧化铟锡ITO或者有机导电聚合物PEDOT，还可以采用金属纳米线、石墨烯或者碳纳米管等导电性好的物质。\n\n[0062]进一步地，该显示装置2工作时，当三维触控传感器1受到触控力F时，通过发射电极Tx和压力接收电极Rx之间形成的第一电容C1的变化确定触控力F的位置，并通过压力感应电极Px和压力接收电极Rx之间形成的第二电容C2的变化确定触控力F的大小。\n\n[0063]在一些实施例中，显示装置2中的显示面板50采用液晶显示面板50，OLED显示面板50，mini-LED显示面板50或Micro-LED显示面板50。显示面板50可以为COA架构(ColorFilter On Array，将彩色滤光片设置在阵列基板30上)或Non-COA架构(Non-Color FilterOn Array，将彩色滤光片不设置在阵列基板30上)，显示面板50的显示模式可以为VA(垂直排列型)、IPS(面内转换型)、TN(扭曲阵列型)、FFS(面内开关型)等。\n\n[0064]在一些实施例中，显示装置2可以为液晶显示器、液晶电视、有机发光二极管显示器、有机发光二极管电视、Micro-LED显示器或Micro-LED电视等。\n\n[0065]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0066]以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种三维触控传感器及显示装置。\n\n背景技术\n\n[0002]随着显示技术的发展，越来越多的功能集成于显示器件中，也同步赋予了显示器件新的作用。触控传感器作为感应人触摸的传感器器件，是显示器件中重要的人机交互的桥梁，使得在显示器件中应用触控技术变得越来越广泛。\n\n[0003]较早期的显示面板中的触控传感器主要在于通过二维的坐标识别确定触摸力的位置，而不能感受触摸力的大小，即无法起到三维触控的效果。而目前的显示面板中的触控传感器在上层电极层设置压力接收电极以及在下层电极层设置压力感应电极，压力接收电极和压力感应电极相对设置。由此通过采集压力接收电极和压力感应电极之间形成的电容的变化，来确定触摸力的位置和大小，从而实现三维触控的效果。但是，目前的三维触控传感器由于通过压力接收电极和压力感应电极之间形成的单一电容的变化来同时确定触摸力的位置和大小，使得触控精度较低，信噪比较低，以及多点触控时效果欠佳。\n\n[0004]因此，有必要提出一种三维触控传感器及显示装置，将压力触控技术应用于目前的触控传感器中，以使得目前的触控传感器能准确确定触摸力的位置和大小，保证触控精度，使得显示装置更好地支持多点触控。\n\n发明内容\n\n[0005]为了解决目前显示面板中的触控传感器由于通过压力接收电极和压力感应电极之间形成的单一电容的变化来同时确定触摸力的位置和大小，使得触控精度较低，信噪比较低，以及多点触控时效果欠佳的问题，本申请实施例提供一种三维触控传感器及显示装置，以准确确定触摸力的位置和大小，保证触控精度，使得显示装置更好地支持多点触控。\n\n[0006]第一方面，本申请提供一种三维触控传感器，包括异面设置的第一电极层和第二电极层，所述第二电极层在与所述第一电极层相对的方向上可产生形变；\n\n[0007]所述第一电极层包括：\n\n[0008]阵列设置的发射电极，在第一方向上，相邻的所述发射电极电性连接；\n\n[0009]阵列设置的压力感应电极，在所述第一方向上，相邻的所述压力感应电极电性连接，且所述压力感应电极和所述发射电极错位分布且互相绝缘；\n\n[0010]所述第二电极层包括：\n\n[0011]阵列设置的压力接收电极，在第二方向上，相邻的所述压力接收电极电性连接，所述第二方向与所述第一方向互相垂直；\n\n[0012]其中，所述压力接收电极与所述压力感应电极对位设置，且所述压力接收电极与所述发射电极错位设置。\n\n[0013]在一些实施例中，所述第二电极层包括形变支撑层和钝化层，所述形变支撑层设于所述第一电极层和所述钝化层之间，所述压力接收电极设于所述钝化层之中。\n\n[0014]在一些实施例中，所述形变支撑层内还设置有第一间隙物和第二间隙物，所述第一间隙物设于所述发射电极和所述压力接收电极之间，所述第二间隙物设于所述压力感应电极和所述压力接收电极之间，且所述第二间隙物的高度小于所述第一间隙物的高度。\n\n[0015]在一些实施例中，所述发射电极和所述压力感应电极之间分布有绝缘材料。\n\n[0016]在一些实施例中，所述压力接收电极的面积大于所述压力感应电极的面积。\n\n[0017]在一些实施例中，所述发射电极、所述压力感应电极和所述压力接收电极的形状为菱形、方形或六角形。\n\n[0018]第二方面，本申请还提供一种显示装置，包括显示面板，以及如上所述的三维触控传感器，所述三维触控传感器设于所述显示面板的正侧；当所述显示面板受到触控力时，所述发射电极和所述压力接收电极用于形成第一电容以确定所述触控力的位置；所述压力感应电极和所述压力接收电极用于形成第二电容以确定所述触控力的大小。\n\n[0019]在一些实施例中，所述三维触控传感器还包括阵列基板，所述阵列基板设置于所述三维触控传感器的第一电极层靠近所述显示面板的一侧。\n\n[0020]在一些实施例中，所述三维触控传感器还包括封装盖板，所述封装盖板设置于所述三维触控传感器的第二电极层远离所述显示面板的一侧。\n\n[0021]在一些实施例中，所述显示面板为液晶显示面板，OLED显示面板，mini-LED显示面板或Micro-LED显示面板。\n\n[0022]本申请实施例提供一种三维触控传感器及显示装置，该三维触控传感器通过在第一电极层设置错位分布且互相绝缘的压力感应电极和发射电极，以及在第二电极层设置压力接收电极，并将压力接收电极与压力感应电极对位设置而与发射电极错位设置，使得压力接收电极与发射电极之间形成第一电容，以及压力接收电极与压力感应电极之间形成第二电容，从而通过压力接收电极与发射电极之间形成的第一电容的变化来确定触控力的位置，而通过压力接收电极与压力感应电极之间形成的第二电容的变化来确定触控力的大小，由此分别通过第一电容的变化和第二电容的变化确定触控力的位置和大小。相比于现有技术仅通过压力接收电极和压力感应电极之间形成的单一电容的变化来同时确定触摸力的位置和大小，本申请实施例提供的三维触控传感器能提高触控精度，使得显示装置能更好地支持多点触控。\n\n附图说明\n\n[0023]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0024]图1为本申请实施例提供的三维触控传感器的剖视图。\n\n[0025]图2为本申请实施例提供的三维触控传感器的发射电极和压力感应电极的结构示意图。\n\n[0026]图3为本申请实施例提供的压力接收电极的结构示意图。\n\n[0027]图4为本申请实施例提供的发射电极、压力感应电极和压力接收电极的俯视图。\n\n[0028]图5为本申请实施例提供的发射电极和压力接收电极的局部俯视图。\n\n[0029]图6为本申请实施例提供的压力感应电极和压力接收电极的局部俯视图。\n\n[0030]图7为本申请实施例提供的显示装置的剖面图。\n\n[0031]其中：\n\n[0032]1、三维触控传感器 10、第一电极层 101、发射电极\n\n[0033]102、压力感应电极 20、第二电极层 201、压力接收电极\n\n[0034]202、形变支撑层 2021、第一间隙物 2022、第二间隙物\n\n[0035]203、钝化层 30、阵列基板 40、封装盖板\n\n[0036]50、显示面板。\n\n具体实施方式\n\n[0037]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0038]本申请实施例的附图中，各个电极层和膜层的厚度，各个电极的大小和形状，以及间隙物的高度仅为示例，目的只是为了示意本申请各实施例的保护内容。\n\n[0039]本申请实施例提供一种三维触控传感器1，图1为本申请实施例提供的三维触控传感器的剖视图，如图1所示，三维触控传感器1包括异面设置的第一电极层10和第二电极层20，第二电极层20在与第一电极层10相对的方向上可产生形变。\n\n[0040]图2为本申请实施例提供的三维触控传感器的发射电极Tx和压力感应电极Px的结构示意图，结合图1和图2所示，第一电极层10包括：阵列设置的发射电极Tx 101，在第一方向Y上，相邻的发射电极Tx 101电性连接；阵列设置的压力感应电极Px 102，在第一方向Y上，相邻的压力感应电极Px 102电性连接，且压力感应电极Px 102和发射电极Tx 101错位分布且互相绝缘。\n\n[0041]图3为本申请实施例提供的压力接收电极Rx的结构示意图，结合图1和图3所示，第二电极层20包括：阵列设置的压力接收电极Rx 201，在第二方向X上，相邻的压力接收电极Rx 201电性连接，第二方向X与第一方向Y互相垂直。其中，压力接收电极Rx 201与压力感应电极Px 102对位设置，且压力接收电极Rx 201与发射电极Tx 101错位设置。\n\n[0042]具体地，在本实施例中，以第一电极层10设于下方，第二电极层20设于上方，第一方向Y为列，第二方向X为行为例，在第一电极层10中，每列发射电极Tx依次连接，每列压力感应电极Px依次连接，且同一行的发射电极Tx位于相邻的两行压力感应电极Px之间，同一列的发射电极Tx位于相邻的两列压力感应电极Px之间；另外，在第二电极层20中，每行压力接收电极Rx依次连接，且压力接收电极Rx与第一电极层10的压力感应电极Px对位设置而与第一电极层10的发射电极Tx错位设置。\n\n[0043]如图1所示，发射电极Tx与压力接收电极Rx之间形成第一电容C1，压力感应电极Px与压力接收电极Rx之间形成第二电容C2，当三维触控传感器1受到触控力F时，根据发射电极Tx与压力接收电极Rx之间形成的第一电容C1的变化确定触控力F的位置，根据压力感应电极Px和压力接收电极Rx之间形成的第二电容C2的变化确定触控力F的大小。\n\n[0044]具体地，结合图1和图5所示，压力接收电极Rx设于上方的第二电极层20中，发射电极Tx设于下方的第一电极层10中，发射电极Tx与压力接收电极Rx之间形成的第一电容C1由固有电容Cn1和投射电容Cm1组成，其中，固有电容Cn1由压力接收电极Rx与发射电极Tx在中间的交叠区域形成，根据电容的公式可知压力接收电极Rx和发射电极Tx之间的固有电容Cn1＝eS1/d，e为电容的介电常数保持不变，S1为组成电容的两个电极即压力接收电极Rx与发射电极Tx中间的交叠区域的面积，d1为组成电容的两个电极即压力接收电极Rx与发射电极Tx之间的垂直距离；同时，压力接收电极Rx和发射电极Tx之间的投射电容Cm1由压力接收电极Rx与发射电极Tx在非交叠区域形成。\n\n[0045]基于此，由于发射电极Tx与压力接收电极Rx错位设置，因此发射电极Tx与压力接收电极Rx之间的固有电容Cn1较小而投射电容Cm1较大，C1的变化主要由Cm1带来，Cn1的变化对C1的变化可以忽略不计，这样当三维触控传感器1受到触控力F时，C1的变化主要由Cm1决定，即C1的变化主要用来反映触控力F的位置。\n\n[0046]进一步地，结合图1和图6所示，压力接收电极Rx设于上方的第二电极层20中，压力感应电极Px设于下方的第一电极层10中，压力接收电极Rx与压力感应电极Px之间形成的第二电容C2由固有电容Cn2和投射电容Cm2(图中未示出)组成，其中，由于压力接收电极Rx与压力感应电极Px相对设置，因此压力接收电极Rx与压力感应电极Px之间的投射电容Cm2较小而固有电容Cn2较大，即，C2的变化主要由Cn2带来，Cm2的变化对C2的变化可以忽略不计，这样当三维触控传感器1受到触控力F时，C2的变化主要由Cn2决定，即C2的变化主要用来反映触控力F的大小。\n\n[0047]本申请实施例提供的三维触控传感器，将第一电极层和第二电极层异面设置且第二电极层能在与第一电极层相对的方向上产生形变，从而在三维触控传感器受到触控力时，能根据第一电极层在与第二电极层之间的电容变化获得触控力的位置和大小，具体通过在第一电极层10设置错位分布且互相绝缘的压力感应电极Px和发射电极Tx，以及在第二电极层20设置压力接收电极Rx，并将压力接收电极Rx与压力感应电极Px对位设置而与发射电极Tx错位设置，从而通过压力接收电极Rx与发射电极Tx之间形成的第一电容C1的变化确定触控力的位置，通过压力接收电极Rx与压力感应电极Px之间形成的第二电容C2的变化确定触控力的大小，由此分别通过第一电容C1的变化和第二电容C2的变化确定触控力的位置和大小。相比于现有技术仅通过压力接收电极和压力感应电极之间形成的单一电容的变化来同时确定触摸力的位置和大小，本申请实施例提供的三维触控传感器提高了触控精度，使得显示装置能更好地支持多点触控。\n\n[0048]可以理解的是，相邻的发射电极Tx和相邻的压力感应电极Px在第一电极层10上按照第一方向Y分别依次连接，而相邻的压力接收电极Rx在第二电极层20中按照与第一方向Y垂直的第二方向X依次连接，这样可以使发射电极Tx或压力感应电极Px的用于连接的走线与压力接收电极Rx用于连接的走线相互垂直，从而减少发射电极Tx或压力感应电极Px的用于连接的走线与压力接收电极Rx用于连接的走线之间的电磁干扰，以免影响第一电容C1和第二电容C2的形成，以及对于第一电容C1和第二电容C2的改变值的测量。\n\n[0049]如图1所示，第二电极层20包括形变支撑层202和钝化层203，形变支撑层202设于第一电极层10和钝化层203之间，压力接收电极Rx设于钝化层203之中。形变支撑层202一般采用透明柔性材料，如由聚二甲基硅氧烷PDMS制成，利用PDMS的柔性特性产生形变，从而使第二电极层20能在与第一电极层10相对的方向上产生形变。另外，将压力接收电极Rx设于钝化层203之中，通过钝化层203使压力接收电极Rx的表面转化为不易被氧化的状态，可以延缓压力接收电极Rx的腐蚀速度，对压力接收电极Rx起到防腐蚀的作用。\n\n[0050]如图1所示，形变支撑层202内还设置有第一间隙物2021和第二间隙物2022，第一间隙物2021设于发射电极Tx和压力接收电极Rx之间，第二间隙物2022设于压力感应电极Px和压力接收电极Rx之间，且第二间隙物2022的高度小于第一间隙物2021的高度。其中，第一间隙物2021用于保持压力接收电极Rx和发射电极Tx之间的距离不变，第二间隙物2022用于使压力接收电极Rx和压力感应电极Px之间保持一定的间隙，从而在三维触控传感器1受到触控力F时，压力接收电极Rx和压力感应电极Px之间的垂直距离能发生改变。\n\n[0051]具体地，图5为本申请实施例提供的发射电极Tx和压力接收电极Rx的局部俯视图，如图5所示的2个发射电极Tx1和Tx2，以及2个压力接收电极Rx1和Rx2组成的局部区域，其中，TX1与RX1之间形成的第一电容C1＝Cn1+Cm1，当三维触控传感器1受到触控力F时，第一间隙物2021使得压力接收电极Rx和发射电极Tx之间的垂直距离d1不变，而压力接收电极Rx与发射电极Tx之间的交叠区域(中间的各自用于连接的走线上的重合区域)的面积S也不变，这样压力接收电极Rx和发射电极Tx之间的固有电容Cn1的电容值保持不变，而此时压力接收电极Rx和发射电极Tx之间的投射电容Cm1会由于手的触摸发生变化，从而使第一电容C1发生变化，由此可以根据第一电容C1的变化确定触控力的位置。\n\n[0052]需要说明的是，投射电容Cm1的改变量△Cm1达到第一电容C1的10％比例以上时才能被检测出来，因此，压力接收电极Rx和发射电极Tx之间的交叠面积不能过大，即压力接收电极Rx和发射电极Tx相对设置，仅在中间的各自用于连接的走线上的重合区域交叠，否则会使得压力接收电极Rx和发射电极Tx之间的固有电容Cn1过大，这样第一电容C1也会变大，导致压力接收电极Rx和发射电极Tx之间的投射电容Cm1的改变量△Cm1占第一电容C1的比例会变小，压力接收电极Rx和发射电极Tx之间的投射电容Cm1的改变量△Cm1不易被检测出来，由此根据第一电容C1的电容值的变化确定触控力的位置的准确性不高。\n\n[0053]进一步地，图6为本申请实施例提供的压力感应电极Px和压力接收电极Rx的局部俯视图(图6所示为压力接收电极Rx的面积大于压力感应电极Px的面积的情况)，如图6所示的2个压力感应电极Px1和PX2，以及2个压力接收电极Rx1和Rx2组成的区域，其中，PX1与RX1之间或者PX2与RX2之间形成的第二电容C2＝Cn2+Cm2，当三维触控传感器1受到触控力F时，第二间隙物2022使得压力接收电极Rx和压力感应电极Px之间的垂直距离d2能够发生改变，根据电容的公式可知压力接收电极Rx与压力感应电极Px之间的固有电容Cn2＝eS2/d2，e为电容的介电常数保持不变，d2为压力接收电极Rx和压力感应电极Px之间的垂直距离，S2为压力接收电极Rx和压力感应电极Px之间的交叠面积，当三维触控传感器受到触控力F时，压力接收电极Rx和压力感应电极Px之间的交叠面积S2保持不变，压力接收电极Rx和压力感应电极Px之间的垂直距离d2则发生改变，从而使得压力接收电极Rx与压力感应电极Px之间的固有电容Cn2发生变化，即第二电容C2发生改变，由此可以根据第二电容值C2的电容值的变化确定触控力F的大小。\n\n[0054]需要说明的是，单个压力接收电极Rx的面积与单个压力感应电极Px的面积之间的大小关系不作限定，但是为了使三维触控传感器受到触控力时，手指与压力接收电极Rx的接触更充分，图4为本申请实施例提供的发射电极Tx、压力感应电极Px和压力接收电极Rx的俯视图，如图4所示，一般将压力接收电极Rx的面积设置为大于压力感应电极Px的面积，因此俯视图仅能看到压力接收电极Rx。\n\n[0055]在一些实施例中，发射电极Tx和压力感应电极Px之间分布有绝缘材料，绝缘材料用于使发射电极Tx和压力感应电极Px之间互相绝缘，防止发射电极Tx和压力感应电极Px之间形成干扰电容，影响第一电容C1和第二电容C2的形成和测量，以致于影响确定触控力F的位置和大小。其中，绝缘材料可以选取常用的绝缘材料，如氧化硅或氮化硅。\n\n[0056]在一些实施例中，发射电极Tx、压力感应电极Px和压力接收电极Rx的形状为菱形、方形或六角形，此处并不限定。\n\n[0057]需要说明的是，发射电极Tx、压力感应电极Px和压力接收电极Rx均为透明电极。\n\n[0058]图7为本申请实施例提供的显示装置的剖面图，如图7所示，本申请还提供一种显示装置2，该显示装置2包括显示面板50，以及如上所述的三维触控传感器1，三维触控传感器1设于显示面板50的正侧，可以理解的是，显示面板50的正侧是指显示面板50用于显示的一侧，这样，在三维触控传感器1受到触控力时，根据第一电容C1的变化和第二电容C2的变化确定触控力F的位置和大小后，通过显示面板50的正侧反应出触控力F的位置和大小。\n\n[0059]本申请实施例提供的显示装置2，通过在第一电极层10设置错位分布且互相绝缘的压力感应电极Px和发射电极Tx，以及在第二电极层20设置压力接收电极Rx，并将压力接收电极Rx与压力感应电极Px对位设置而与发射电极Tx错位设置，从而通过压力接收电极Rx与发射电极Tx之间形成的第一电容C1确定触控力的位置，通过压力接收电极Rx与压力感应电极Px之间形成的第二电容C2确定触控力的大小，由此分别通过第一电容C1的变化和第二电容C2的变化确定触控力的位置和大小。相比于现有技术仅通过压力接收电极和压力感应电极之间形成的单一电容的变化来同时确定触摸力的位置和大小，本申请实施例提供的三维触控传感器提高了触控精度，使得显示装置能更好地支持多点触控。\n\n[0060]其中，三维触控传感器1还包括阵列基板30，阵列基板30设置于三维触控传感器1的第一电极层10靠近显示面板50的一侧。三维触控传感器还包括封装盖板40，封装盖板40设置于三维触控传感器1的第二电极层20远离显示面板50的一侧。也即，三维触控传感器1设于显示面板50上方，三维触控传感器1和显示面板50之间通过OCA光学胶贴合在一起，其中，显示面板50、三维触控传感器1的阵列基板30、第一电极层10、第二电极层20和封装盖板40由下至上依次设置。\n\n[0061]具体地，当三维触控传感器1设置在阵列基板30上时，制作阵列基板30的衬底基板可以与三维触控传感器1的衬底基板采用同一衬底基板，阵列基板30可以采用玻璃基板、PET、PI或者CPI等柔性基板，从而使该三维触控传感器能制成柔性三维触控传感器，从而具有轻薄便携、电学性能优异和集成高等特点，可广泛应用在可穿戴电子设备、机器人、医疗机械等领域；三维触控传感器的第一电极层10为透明电极时，第一电极层10与阵列基板30上的像素电极同层设置，或与阵列基板30上的公共电极同层设置，或为单独设置的透明导电层形成的电极，当第一电极层10与阵列基板30上的像素电极同层设置，或与阵列基板30上的公共电极同层设置时，在实际生成过程中，第一电极层10可以与阵列基板30上的像素电极或阵列基板30上的公共电极同时制作，节省了工艺流程和工艺时间，降低了生产成本。同理，当三维触控传感器1的第二电极层20为透明电极时，第二电极层20也可以与阵列基板30上的像素电极同层设置，或与阵列基板30上的公共电极同层设置，或为单独设置的透明导电层形成的电极，只要符合第一电极层10和第二电极层20异层设置即可。其中，第一电极层10和第二电极层20可以为Cu、Al、Au、Pt、Ag、Mo等导电性好的金属中的一种或多种，或者这些金属形成的合金，也可以为氧化铟锡ITO或者有机导电聚合物PEDOT，还可以采用金属纳米线、石墨烯或者碳纳米管等导电性好的物质。\n\n[0062]进一步地，该显示装置2工作时，当三维触控传感器1受到触控力F时，通过发射电极Tx和压力接收电极Rx之间形成的第一电容C1的变化确定触控力F的位置，并通过压力感应电极Px和压力接收电极Rx之间形成的第二电容C2的变化确定触控力F的大小。\n\n[0063]在一些实施例中，显示装置2中的显示面板50采用液晶显示面板50，OLED显示面板50，mini-LED显示面板50或Micro-LED显示面板50。显示面板50可以为COA架构(ColorFilter On Array，将彩色滤光片设置在阵列基板30上)或Non-COA架构(Non-Color FilterOn Array，将彩色滤光片不设置在阵列基板30上)，显示面板50的显示模式可以为VA(垂直排列型)、IPS(面内转换型)、TN(扭曲阵列型)、FFS(面内开关型)等。\n\n[0064]在一些实施例中，显示装置2可以为液晶显示器、液晶电视、有机发光二极管显示器、有机发光二极管电视、Micro-LED显示器或Micro-LED电视等。\n\n[0065]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0066]以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10932, 23986, '技术领域\n\n[0001]本发明涉及显示技术领域，特别涉及一种显示面板。\n\n背景技术\n\n[0002]有机电致发光二极管(Organic Light Emitting Diode，简称OLED)显示面板具有自发光、高对比度、宽视角、高响应速度等特点。其工作原理是利用ITO透明电极和金属电极分别作为器件的阳极和阴极，在一定电压驱动下，电子和空穴分别从阴极和阳极注入到电子和空穴传输层，电子和空穴分别经过电子和空穴传输层迁移到发光层，并在发光层中相遇，形成激子并使发光层分子激发，辐射出可见光。\n\n[0003]常规OLED显示面板的发光层发射的光线经过封装层、偏光层等输出之后，输出的光线便具有特定的方向性，从屏幕中出射光的利用率较低和色彩度较差。部分面板厂商采用彩膜层和黑矩阵叠加方法替代传统偏光片材料，还有一些厂商还采用微棱镜矩阵等方式对发光器件出光光路进行准直，从而获得最大程度的出光效率。采用彩膜层、黑矩阵和微棱镜矩阵从某种方面上看，可以提高出光的利用率，正向视角亮度和色彩有明显提高，但是不可避免的会极大的损失非正向视角下的亮度，极大程度降低了产品亮度视角，当从其他角度观看显示面板，便不能看到原本的颜色，只能看到模糊的图像，甚至全黑或全白，影响了产品的用户体验。\n\n[0004]综上所述，需要提出一种新的显示面板，以解决现有技术的显示面板采用彩膜层、黑矩阵和微棱镜矩阵方法替代传统偏光片材料，造成像素边缘的出射的光线容易被黑色矩阵吸收，黑矩阵和微棱镜矩阵造成非正向视角下的亮度和视角较小，需要对彩色滤光色阻层和黑矩阵层的结构进行改进，抑制黑矩阵材料对OLED器件大视角出光的吸收，在保证正视角度的亮度的情况下，避免的会极大的损失非正向视角下的亮度，极大程度降低了产品亮度和视角的技术问题。\n\n发明内容\n\n[0005]本发明提供一种OLED显示面板，能够解决现有技术的显示面板采用彩膜层、黑矩阵和微棱镜矩阵方法替代传统偏光片材料，造成像素边缘的出射的光线容易被黑色矩阵吸收，黑矩阵和微棱镜矩阵造成非正向视角下的亮度和视角较小，极大的损失非正向视角下的亮度的技术问题。\n\n[0006]本发明提供的技术方案如下：\n\n[0007]本发明实施例提供一种显示面板，所述显示面板至少包括发光器件、位于所述发光器件上的封装层、位于所述封装层上的第一折射层、位于所述第一折射层上的第二折射层、以及位于所述第二折射层上的彩色滤光色阻块和黑色矩阵；\n\n[0008]其中，所述黑色矩阵位于相邻所述彩色滤光色阻块的间隙内，所述封装层、所述第一折射层的开口、所述第二折射层以及所述彩色滤光色阻块位于所述发光器件的出光路径上；所述第二折射层背向所述发光器件一侧形成有凹陷区，所述彩色滤光色阻块对应所述凹陷区形成有凸起部。\n\n[0009]根据本发明一优选实施例，所述第一折射层的折射率小于所述第二折射层的折射率，所述彩色滤光色阻块的折射率小于所述第二折射层的折射率，所述封装层的折射率等于所述第二折射层的折射率。\n\n[0010]根据本发明一优选实施例，所述第一折射层形成于所述封装层表面，且对应所述发光器件形成所述第一折射层的开口，且所述第一折射层的开口边缘具有朝向所述彩色滤光色阻块的反射面；其中，从所述第二折射层射向所述反射面的光线，朝向所述彩色滤光色阻块的方向发生反射。\n\n[0011]根据本发明一优选实施例，所述第二折射层对应所述第一折射层的开口形成有凸出块，且所述凸出块贴合于所述封装层表面；其中，所述凸出块覆盖所述发光器件，所述凸起部覆盖所述凸出块。\n\n[0012]根据本发明一优选实施例，所述凸起部为圆弧结构或椭圆形结构，靠近所述凸起部中心线位置的水平夹角小于远离所述中心线位置的水平夹角。\n\n[0013]根据本发明一优选实施例，所述第一折射层的折射率为1.4-1.6，所述第一折射层的厚度为1um-5um；所述第二折射层的折射率为1.7-2.5，所述第二折射层的厚度为1um-50um。\n\n[0014]根据本发明一优选实施例，所述第一折射层的材料为丙烯酸基树脂、环氧树脂、酚醛树脂、聚酰胺基树脂、聚酰亚胺基树脂、不饱和聚酯树脂中至少一种材料；所述第二折射层的材料为聚四氟乙烯或聚苯乙烯，其中，所述第二折射层还掺杂有碳黑颗粒，所述碳黑颗粒为亚克力材料制备的球状纳米颗粒。\n\n[0015]根据本发明一优选实施例，所述反射面远离所述第一折射层的开口的中心线倾斜或弯曲，其中，所述反射面为光滑的斜坡或光滑弧面部。\n\n[0016]根据本发明一优选实施例，所述发光器件为OLED器件、LED器件或Micro-LED器件。\n\n[0017]根据本发明一优选实施例，所述彩色滤光色阻块的R、G、B色阻块分别与所述发光器件的R、G、B子像素对位设置。\n\n[0018]本发明的有益效果：本发明实施例提供一种显示面板，该显示面板的黑色矩阵位于相邻彩色滤光色阻块的间隙内，且封装层、第一折射层的开口、第二折射层以及彩色滤光色阻块位于发光器件的出光路径上，第二折射层背向发光器件一侧形成有凹陷区，彩色滤光色阻块对应凹陷区形成有凸起部；光线由第一折射层射向第二折射层的折射角度变小，再由第二折射层射向彩色滤光色阻块的折射角度会变大，继而增加显示面板出光的角度，另外彩色滤光色阻块表面的凸起部的法线方向向发光器件的中心线靠拢，射向彩色滤光色阻块边缘的光线也会向发光器件的中心线偏移，避免边缘出射光被黑矩阵吸收的情况，在保留正向视角亮度的同时，提升显示面板边缘侧视视角下出光亮度和视角。\n\n附图说明\n\n[0019]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0020]图1为本发明提供的显示面板的一种结构示意图。\n\n[0021]图2为本发明提供的显示面板的另一中结构示意图。\n\n[0022]图3为本发明提供的OLED显示面板的又一种结构示意图。\n\n[0023]图4为图3中的出射光线S9折射路径示意图。\n\n具体实施方式\n\n[0024]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示，图中虚线表示在结构中并不存在的，仅仅说明结构的形状和位置。\n\n[0025]本发明针对现有技术的显示面板采用彩膜层、黑矩阵和微棱镜矩阵方法替代传统偏光片材料，造成像素边缘的出射的光线容易被黑色矩阵吸收，黑矩阵和微棱镜矩阵造成非正向视角下的亮度和视角较小，极大的损失非正向视角下的亮度的技术问题，本实施例能够解决该缺陷。\n\n[0026]如图1所示，本发明实施例提供显示面板的一种结构示意图。显示面板100至少包括发光器件101、位于发光器件101上的封装层102、位于封装层102上的第一折射层1031、位于第一折射层1031上的第二折射层1032、以及位于第二折射层1032上的彩色滤光色阻块1033和黑色矩阵1034，第一折射层1031、第二折射层1032、彩色滤光色阻块1033和黑色矩阵1034构成偏光层103，发光器件101优选为OLED器件、LED器件或Micro-LED器件。本实施例的彩色滤光色阻块1033朝向发光器件101一侧为平面，彩色滤光色阻块1033可提高显示面板100的色域表现，并降低显示面板100的功耗。\n\n[0027]第一折射层1031的折射率为1.4-1.6，厚度为1um-5um，第二折射层1032的折射率为1.7-2.5，厚度为1um-50um。第一折射层1031的材料优选为丙烯酸基树脂、环氧树脂、酚醛树脂、聚酰胺基树脂、聚酰亚胺基树脂、不饱和聚酯树脂中至少一种材料；第二折射层2032的材料优选为聚四氟乙烯或聚苯乙烯，第二折射层1032还掺杂有碳黑颗粒，碳黑颗粒为亚克力材料制备的球状纳米颗粒。\n\n[0028]第一折射层1031形成于封装层102表面，且对应发光器件101形成第一折射层1031的开口，且第一折射层1031的开口边缘具有朝向彩色滤光色阻块的反射面10311；其中，从第二折射层1032射向反射面10311的光线，朝向彩色滤光色阻块1033的方向发生反射。\n\n[0029]第一折射层1031的折射率优选小于第二折射层1032的折射率，彩色滤光色阻块1033的折射率优选小于第二折射层1032的折射率，第二折射层1032的折射率优选等于封装层102的折射率。由第一折射层1031射向第二折射层1032的光的折射角度会变小，光线向发光器件101的中心线靠拢，由第二折射层1032射向彩色滤光色阻块1033的光的折射角度会变大，继而增加显示面板200出光的角度，具体出射光线在图1中未画出，图1中的发光器件101出射的光线S1和S3垂直射出彩色滤光色阻块1033。由于黑色矩阵1034位于彩色滤光色阻块1033两侧，发光器件101出射的光线S2和S4在第一折射层1031与第二折射层1032的边界上发生反射后，射向黑色矩阵1034后，被黑色矩阵1034吸收，降低发光器件101部分边缘出射光的利用率和视角，并不能完全解决本发明的全部技术问题。\n\n[0030]为了完全解决上述技术问题，本发明对上述实施例中的结构做了进一步改进，如图2所示，本发明实施例提供显示面板的另一种结构示意图。显示面板200至少包括发光器件201、位于发光器件201上的封装层202、位于封装层202上的第一折射层2031和第二折射层2032、以及位于第二折射层2032上的彩色滤光色阻块2033和黑色矩阵2034，第一折射层2031、第二折射层2032、彩色滤光色阻块2033和黑色矩阵2034构成偏光层203，发光器件201优选为OLED器件、LED器件或Micro-LED器件。其中，黑色矩阵2034位于相邻彩色滤光色阻块2033的间隙内，可以避免不同颜色的出射光发生混色。彩色滤光色阻块2033可增强显示面板200的色域表现，并降低显示面板200的功耗。\n\n[0031]本实施例的第一折射层2031的折射率小于第二折射层2032的折射率，彩色滤光色阻块2033的折射率小于第二折射层2032的折射率，封装层202的折射率等于第二折射层2032的折射率，光线可以从封装层202和第二折射层2032内直线传播，不会发生折射。第一折射层2031的折射率优选为1.4-1.6，第一折射层2031的厚度优选为1um-5um；第二折射层2032的折射率优选为1.7-2.5，第二折射层2032的厚度优选为1um-50um。第一折射层的材料为丙烯酸基树脂、环氧树脂、酚醛树脂、聚酰胺基树脂、聚酰亚胺基树脂、不饱和聚酯树脂中至少一种材料；第二折射层的材料为聚四氟乙烯或聚苯乙烯，其中，第二折射层还掺杂有碳黑颗粒，碳黑颗粒为亚克力材料制备的球状纳米颗粒。封装层202为单独无机层或无机层与有机层的叠加膜层，无机层优选为Al2O3、TiO2、SiNx、SiCNx、SiOx的其中一种或一种以上的组合材料，有机层采用喷墨打印技术制备，有机层的材料优选为亚克力、六甲基二甲硅醚、聚丙烯酸酯类、聚碳酸脂类、聚苯乙烯的其中一种或一种以上的组合材料。\n\n[0032]第一折射层2031形成于封装层202表面，且对应发光器件201形成第一折射层2031的开口，第一折射层2031的开口为环形凹槽。第一折射层2031的开口边缘具有朝向彩色滤光色阻块2033的反射面20311；其中，反射面20311远离第一折射层2031的开口的中心线倾斜或弯曲，其中，反射面20311优选为光滑的斜坡或光滑弧面部。从第二折射层2032射向反射面20311的光线，朝向彩色滤光色阻块2033的方向发生反射。第二折射层2032对应第一折射层2031的开口形成有凸出块20321，且凸出块20321贴合于封装层202表面；其中，凸出块20321覆盖发光器件201，凸起部20331覆盖凸出块20321，可以最大程度最大程度提升发光器件201出射光线的利用效率。\n\n[0033]封装层202、第一折射层2031的开口、第二折射层2032以及彩色滤光色阻块2033位于发光器件201的出光路径上；第二折射层2032背向发光器件201一侧形成有凹陷区，彩色滤光色阻块2033对应凹陷区形成有凸起部20331。凸起部20331优选为圆弧结构或椭圆形结构，靠近凸起部20331中心线位置的水平夹角小于远离中心线位置的水平夹角。由第一折射层2031射向第二折射层2032的光的折射角度会变小，光线向发光器件201的中心线靠拢，由第二折射层2032射向彩色滤光色阻块2033的光的折射角度会变大，继而增加显示面板200出光的角度，具体的光线的折射路径会在图2具体描述。图2中的发光器件201出射的光线S5和S6朝向彩色滤光色阻块2033射出。在另一种实施例中的凸起部20331为波浪形结构或锯齿形结构。\n\n[0034]由图1和图2对比可知，彩色滤光色阻块2033形成有凸起部20331后，朝向黑色矩阵2034的入射光线S7和S8未被黑色矩阵2034吸收，沿彩色滤光色阻块2033边缘出射，即彩色滤光色阻块2033表面的弧形的法线方向向发光器件201的中心线靠拢，射向彩色滤光色阻块2033边缘的光线也会向发光器件201的中心线偏移，避免OLED器件201边缘出射光被黑色矩阵2034吸收的情况，从而获得最大程度的出光效率，该技术在保留正向视角亮度的同时，可以大幅降低黑色矩阵2034对发光器件201大视角出光的吸收，抑制“天窗效应”，提升其他视角(侧视)下出光亮度，提升整个产品亮度视角，完全解决本发明的技术问题。\n\n[0035]图3以OLED面板为例，说明彩色滤光色阻块的R、G、B色阻块分别与发光器件的R、G、B子像素对位设置。如图3所示，显示面板300优选为顶发射的OLED显示面板，显示面板300包括衬底301、位于衬底301表面的阵列基板302、位于阵列基板302表面的发光器件层、位于发光器件层表面的封装层308以及位于封装层308表面的偏光层400；偏光层400包括第一折射层401、位于第一折射层401上的第二折射层402以及位于第二折射层402上的彩色滤光色阻块403和黑色矩阵404。偏光层400的结构跟图2中的偏光层203结构类似。\n\n[0036]衬底301包括叠层设置的第一柔性层、第一阻水层、第二柔性层、以及第二阻水层，第一柔性层和第二柔性层的材料分别为黄色聚酰亚胺和透明聚酰亚胺，第一阻水层和第二阻水层的材料优选为二氧化硅或氮化硅。阵列基板302为薄膜晶体管阵列基板，包括位于衬底上的缓冲层、设置于缓冲层上的多个驱动薄膜晶体管、以及设置于多个驱动薄膜晶体管上的平坦化层；发光器件层包括位于平坦化层表面的阳极、位于阳极表面的发光层、位于发光层表面的阴极，各个子像素的发光层共用一个阴极，其中，阳极通过平坦化层上的过孔与薄膜晶体管中漏极电性连接，柔性印刷电路板贴附有相应驱动芯片，外接电源的负极通过绑定区，将相应电性号传递到电源走线层，最后电源走线层将相应电性号传递到显示区中阴极层307，发光器件层定义有像素开口区和非开口区，像素开口区为倒梯形、倒三角形或者扇形中一种图形。\n\n[0037]本实施例的发光器件层包括像素定义层3031、像素定义层3032、像素定义层3033和像素定义层3034，像素定义层3031与像素定义层3032之间形成红色(R)子像素，R子像素包括阳极3041、位于阳极3041上的发光层3042以及位于发光层3042上的部分阴极层307，像素定义层3032和像素定义层3033之间形成绿色(G)子像素，G子像素包括阳极3051、位于阳极3051上的发光层3052以及位于发光层3052上的部分阴极层307，像素定义层3033与像素定义层3034之间形成蓝色(B)子像素，B子像素包括阳极3061、位于阳极3061上的发光层3062以及位于发光层3062上的部分阴极层307。\n\n[0038]彩色滤光色阻块403的R、G、B色阻块分别与发光器件层的R、G、B子像素对位设置。R子像素正上方设置有第二折射层402的凸出块4021和位于凸出块4021上的R色阻块4031，G色子像素正上方设置有第二折射层402的凸出块4022和位于凸出块4022上的G色阻块4032，B子像素正上方设置有第二折射层402的凸出块4023和位于凸出块4023上的B色阻块4033。R色阻块4031两侧设置有黑色矩阵4041和黑色矩阵4042，G色阻块4032两侧设置有黑色矩阵4042和黑色矩阵4043，B色阻块4033两侧设置有黑色矩阵4043和黑色矩阵4044。\n\n[0039]发光器件层定义有像素开口和非开口区，彩色滤光色阻块403与像素开口对应设置，朝向发光器件层一侧为凸起部；第一折射层401与非开口区对应设置。当发光器件层出射光线S10后，出射光线S10不与第一折射层201接触，直接射向第二折射层402，再次由第二折射层402射向彩色滤光色阻块403的界面上，折射角大于相应入射角，也可以提升非正视角下出光亮度和视角。当发光器件层出射光线S9后，出射光线S1射向第一折射层401的反射面时发生反射，入射角为θ1，反射角为θ2，发生反射后，再次由第二折射层402射向彩色滤光色阻块403的界面上，入射角为θ3，折射角为θ4，此时的折射角θ4大于入射角θ3，从折射后光线未与黑色矩阵4041接触，避免出射光线S9被黑色矩阵4041吸收，以此实现提升非正视角下出光亮度和视角，具体参考图4。\n\n[0040]本发明实施例提供一种显示面板，该显示面板的黑色矩阵位于相邻彩色滤光色阻块的间隙内，封装层、第一折射层的开口、第二折射层以及彩色滤光色阻块位于发光器件的出光路径上，第二折射层背向发光器件一侧形成有凹陷区，彩色滤光色阻块对应凹陷区形成有凸起部；光线由第一折射层射向第二折射层的折射角度变小，再由第二折射层射向彩色滤光色阻块的折射角度会变大，继而增加显示面板出光的角度，另外彩色滤光色阻块表面的凸起部的法线方向向发光器件的中心线靠拢，射向彩色滤光色阻块边缘的光线也会向发光器件的中心线偏移，避免出射光直射黑矩阵的情况，在保留正向视角亮度的同时，提升像素边缘侧视视角下出光亮度和视角。\n\n[0041]综上，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及显示技术领域，特别涉及一种显示面板。\n\n背景技术\n\n[0002]有机电致发光二极管(Organic Light Emitting Diode，简称OLED)显示面板具有自发光、高对比度、宽视角、高响应速度等特点。其工作原理是利用ITO透明电极和金属电极分别作为器件的阳极和阴极，在一定电压驱动下，电子和空穴分别从阴极和阳极注入到电子和空穴传输层，电子和空穴分别经过电子和空穴传输层迁移到发光层，并在发光层中相遇，形成激子并使发光层分子激发，辐射出可见光。\n\n[0003]常规OLED显示面板的发光层发射的光线经过封装层、偏光层等输出之后，输出的光线便具有特定的方向性，从屏幕中出射光的利用率较低和色彩度较差。部分面板厂商采用彩膜层和黑矩阵叠加方法替代传统偏光片材料，还有一些厂商还采用微棱镜矩阵等方式对发光器件出光光路进行准直，从而获得最大程度的出光效率。采用彩膜层、黑矩阵和微棱镜矩阵从某种方面上看，可以提高出光的利用率，正向视角亮度和色彩有明显提高，但是不可避免的会极大的损失非正向视角下的亮度，极大程度降低了产品亮度视角，当从其他角度观看显示面板，便不能看到原本的颜色，只能看到模糊的图像，甚至全黑或全白，影响了产品的用户体验。\n\n[0004]综上所述，需要提出一种新的显示面板，以解决现有技术的显示面板采用彩膜层、黑矩阵和微棱镜矩阵方法替代传统偏光片材料，造成像素边缘的出射的光线容易被黑色矩阵吸收，黑矩阵和微棱镜矩阵造成非正向视角下的亮度和视角较小，需要对彩色滤光色阻层和黑矩阵层的结构进行改进，抑制黑矩阵材料对OLED器件大视角出光的吸收，在保证正视角度的亮度的情况下，避免的会极大的损失非正向视角下的亮度，极大程度降低了产品亮度和视角的技术问题。\n\n发明内容\n\n[0005]本发明提供一种OLED显示面板，能够解决现有技术的显示面板采用彩膜层、黑矩阵和微棱镜矩阵方法替代传统偏光片材料，造成像素边缘的出射的光线容易被黑色矩阵吸收，黑矩阵和微棱镜矩阵造成非正向视角下的亮度和视角较小，极大的损失非正向视角下的亮度的技术问题。\n\n[0006]本发明提供的技术方案如下：\n\n[0007]本发明实施例提供一种显示面板，所述显示面板至少包括发光器件、位于所述发光器件上的封装层、位于所述封装层上的第一折射层、位于所述第一折射层上的第二折射层、以及位于所述第二折射层上的彩色滤光色阻块和黑色矩阵；\n\n[0008]其中，所述黑色矩阵位于相邻所述彩色滤光色阻块的间隙内，所述封装层、所述第一折射层的开口、所述第二折射层以及所述彩色滤光色阻块位于所述发光器件的出光路径上；所述第二折射层背向所述发光器件一侧形成有凹陷区，所述彩色滤光色阻块对应所述凹陷区形成有凸起部。\n\n[0009]根据本发明一优选实施例，所述第一折射层的折射率小于所述第二折射层的折射率，所述彩色滤光色阻块的折射率小于所述第二折射层的折射率，所述封装层的折射率等于所述第二折射层的折射率。\n\n[0010]根据本发明一优选实施例，所述第一折射层形成于所述封装层表面，且对应所述发光器件形成所述第一折射层的开口，且所述第一折射层的开口边缘具有朝向所述彩色滤光色阻块的反射面；其中，从所述第二折射层射向所述反射面的光线，朝向所述彩色滤光色阻块的方向发生反射。\n\n[0011]根据本发明一优选实施例，所述第二折射层对应所述第一折射层的开口形成有凸出块，且所述凸出块贴合于所述封装层表面；其中，所述凸出块覆盖所述发光器件，所述凸起部覆盖所述凸出块。\n\n[0012]根据本发明一优选实施例，所述凸起部为圆弧结构或椭圆形结构，靠近所述凸起部中心线位置的水平夹角小于远离所述中心线位置的水平夹角。\n\n[0013]根据本发明一优选实施例，所述第一折射层的折射率为1.4-1.6，所述第一折射层的厚度为1um-5um；所述第二折射层的折射率为1.7-2.5，所述第二折射层的厚度为1um-50um。\n\n[0014]根据本发明一优选实施例，所述第一折射层的材料为丙烯酸基树脂、环氧树脂、酚醛树脂、聚酰胺基树脂、聚酰亚胺基树脂、不饱和聚酯树脂中至少一种材料；所述第二折射层的材料为聚四氟乙烯或聚苯乙烯，其中，所述第二折射层还掺杂有碳黑颗粒，所述碳黑颗粒为亚克力材料制备的球状纳米颗粒。\n\n[0015]根据本发明一优选实施例，所述反射面远离所述第一折射层的开口的中心线倾斜或弯曲，其中，所述反射面为光滑的斜坡或光滑弧面部。\n\n[0016]根据本发明一优选实施例，所述发光器件为OLED器件、LED器件或Micro-LED器件。\n\n[0017]根据本发明一优选实施例，所述彩色滤光色阻块的R、G、B色阻块分别与所述发光器件的R、G、B子像素对位设置。\n\n[0018]本发明的有益效果：本发明实施例提供一种显示面板，该显示面板的黑色矩阵位于相邻彩色滤光色阻块的间隙内，且封装层、第一折射层的开口、第二折射层以及彩色滤光色阻块位于发光器件的出光路径上，第二折射层背向发光器件一侧形成有凹陷区，彩色滤光色阻块对应凹陷区形成有凸起部；光线由第一折射层射向第二折射层的折射角度变小，再由第二折射层射向彩色滤光色阻块的折射角度会变大，继而增加显示面板出光的角度，另外彩色滤光色阻块表面的凸起部的法线方向向发光器件的中心线靠拢，射向彩色滤光色阻块边缘的光线也会向发光器件的中心线偏移，避免边缘出射光被黑矩阵吸收的情况，在保留正向视角亮度的同时，提升显示面板边缘侧视视角下出光亮度和视角。\n\n附图说明\n\n[0019]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0020]图1为本发明提供的显示面板的一种结构示意图。\n\n[0021]图2为本发明提供的显示面板的另一中结构示意图。\n\n[0022]图3为本发明提供的OLED显示面板的又一种结构示意图。\n\n[0023]图4为图3中的出射光线S9折射路径示意图。\n\n具体实施方式\n\n[0024]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示，图中虚线表示在结构中并不存在的，仅仅说明结构的形状和位置。\n\n[0025]本发明针对现有技术的显示面板采用彩膜层、黑矩阵和微棱镜矩阵方法替代传统偏光片材料，造成像素边缘的出射的光线容易被黑色矩阵吸收，黑矩阵和微棱镜矩阵造成非正向视角下的亮度和视角较小，极大的损失非正向视角下的亮度的技术问题，本实施例能够解决该缺陷。\n\n[0026]如图1所示，本发明实施例提供显示面板的一种结构示意图。显示面板100至少包括发光器件101、位于发光器件101上的封装层102、位于封装层102上的第一折射层1031、位于第一折射层1031上的第二折射层1032、以及位于第二折射层1032上的彩色滤光色阻块1033和黑色矩阵1034，第一折射层1031、第二折射层1032、彩色滤光色阻块1033和黑色矩阵1034构成偏光层103，发光器件101优选为OLED器件、LED器件或Micro-LED器件。本实施例的彩色滤光色阻块1033朝向发光器件101一侧为平面，彩色滤光色阻块1033可提高显示面板100的色域表现，并降低显示面板100的功耗。\n\n[0027]第一折射层1031的折射率为1.4-1.6，厚度为1um-5um，第二折射层1032的折射率为1.7-2.5，厚度为1um-50um。第一折射层1031的材料优选为丙烯酸基树脂、环氧树脂、酚醛树脂、聚酰胺基树脂、聚酰亚胺基树脂、不饱和聚酯树脂中至少一种材料；第二折射层2032的材料优选为聚四氟乙烯或聚苯乙烯，第二折射层1032还掺杂有碳黑颗粒，碳黑颗粒为亚克力材料制备的球状纳米颗粒。\n\n[0028]第一折射层1031形成于封装层102表面，且对应发光器件101形成第一折射层1031的开口，且第一折射层1031的开口边缘具有朝向彩色滤光色阻块的反射面10311；其中，从第二折射层1032射向反射面10311的光线，朝向彩色滤光色阻块1033的方向发生反射。\n\n[0029]第一折射层1031的折射率优选小于第二折射层1032的折射率，彩色滤光色阻块1033的折射率优选小于第二折射层1032的折射率，第二折射层1032的折射率优选等于封装层102的折射率。由第一折射层1031射向第二折射层1032的光的折射角度会变小，光线向发光器件101的中心线靠拢，由第二折射层1032射向彩色滤光色阻块1033的光的折射角度会变大，继而增加显示面板200出光的角度，具体出射光线在图1中未画出，图1中的发光器件101出射的光线S1和S3垂直射出彩色滤光色阻块1033。由于黑色矩阵1034位于彩色滤光色阻块1033两侧，发光器件101出射的光线S2和S4在第一折射层1031与第二折射层1032的边界上发生反射后，射向黑色矩阵1034后，被黑色矩阵1034吸收，降低发光器件101部分边缘出射光的利用率和视角，并不能完全解决本发明的全部技术问题。\n\n[0030]为了完全解决上述技术问题，本发明对上述实施例中的结构做了进一步改进，如图2所示，本发明实施例提供显示面板的另一种结构示意图。显示面板200至少包括发光器件201、位于发光器件201上的封装层202、位于封装层202上的第一折射层2031和第二折射层2032、以及位于第二折射层2032上的彩色滤光色阻块2033和黑色矩阵2034，第一折射层2031、第二折射层2032、彩色滤光色阻块2033和黑色矩阵2034构成偏光层203，发光器件201优选为OLED器件、LED器件或Micro-LED器件。其中，黑色矩阵2034位于相邻彩色滤光色阻块2033的间隙内，可以避免不同颜色的出射光发生混色。彩色滤光色阻块2033可增强显示面板200的色域表现，并降低显示面板200的功耗。\n\n[0031]本实施例的第一折射层2031的折射率小于第二折射层2032的折射率，彩色滤光色阻块2033的折射率小于第二折射层2032的折射率，封装层202的折射率等于第二折射层2032的折射率，光线可以从封装层202和第二折射层2032内直线传播，不会发生折射。第一折射层2031的折射率优选为1.4-1.6，第一折射层2031的厚度优选为1um-5um；第二折射层2032的折射率优选为1.7-2.5，第二折射层2032的厚度优选为1um-50um。第一折射层的材料为丙烯酸基树脂、环氧树脂、酚醛树脂、聚酰胺基树脂、聚酰亚胺基树脂、不饱和聚酯树脂中至少一种材料；第二折射层的材料为聚四氟乙烯或聚苯乙烯，其中，第二折射层还掺杂有碳黑颗粒，碳黑颗粒为亚克力材料制备的球状纳米颗粒。封装层202为单独无机层或无机层与有机层的叠加膜层，无机层优选为Al2O3、TiO2、SiNx、SiCNx、SiOx的其中一种或一种以上的组合材料，有机层采用喷墨打印技术制备，有机层的材料优选为亚克力、六甲基二甲硅醚、聚丙烯酸酯类、聚碳酸脂类、聚苯乙烯的其中一种或一种以上的组合材料。\n\n[0032]第一折射层2031形成于封装层202表面，且对应发光器件201形成第一折射层2031的开口，第一折射层2031的开口为环形凹槽。第一折射层2031的开口边缘具有朝向彩色滤光色阻块2033的反射面20311；其中，反射面20311远离第一折射层2031的开口的中心线倾斜或弯曲，其中，反射面20311优选为光滑的斜坡或光滑弧面部。从第二折射层2032射向反射面20311的光线，朝向彩色滤光色阻块2033的方向发生反射。第二折射层2032对应第一折射层2031的开口形成有凸出块20321，且凸出块20321贴合于封装层202表面；其中，凸出块20321覆盖发光器件201，凸起部20331覆盖凸出块20321，可以最大程度最大程度提升发光器件201出射光线的利用效率。\n\n[0033]封装层202、第一折射层2031的开口、第二折射层2032以及彩色滤光色阻块2033位于发光器件201的出光路径上；第二折射层2032背向发光器件201一侧形成有凹陷区，彩色滤光色阻块2033对应凹陷区形成有凸起部20331。凸起部20331优选为圆弧结构或椭圆形结构，靠近凸起部20331中心线位置的水平夹角小于远离中心线位置的水平夹角。由第一折射层2031射向第二折射层2032的光的折射角度会变小，光线向发光器件201的中心线靠拢，由第二折射层2032射向彩色滤光色阻块2033的光的折射角度会变大，继而增加显示面板200出光的角度，具体的光线的折射路径会在图2具体描述。图2中的发光器件201出射的光线S5和S6朝向彩色滤光色阻块2033射出。在另一种实施例中的凸起部20331为波浪形结构或锯齿形结构。\n\n[0034]由图1和图2对比可知，彩色滤光色阻块2033形成有凸起部20331后，朝向黑色矩阵2034的入射光线S7和S8未被黑色矩阵2034吸收，沿彩色滤光色阻块2033边缘出射，即彩色滤光色阻块2033表面的弧形的法线方向向发光器件201的中心线靠拢，射向彩色滤光色阻块2033边缘的光线也会向发光器件201的中心线偏移，避免OLED器件201边缘出射光被黑色矩阵2034吸收的情况，从而获得最大程度的出光效率，该技术在保留正向视角亮度的同时，可以大幅降低黑色矩阵2034对发光器件201大视角出光的吸收，抑制“天窗效应”，提升其他视角(侧视)下出光亮度，提升整个产品亮度视角，完全解决本发明的技术问题。\n\n[0035]图3以OLED面板为例，说明彩色滤光色阻块的R、G、B色阻块分别与发光器件的R、G、B子像素对位设置。如图3所示，显示面板300优选为顶发射的OLED显示面板，显示面板300包括衬底301、位于衬底301表面的阵列基板302、位于阵列基板302表面的发光器件层、位于发光器件层表面的封装层308以及位于封装层308表面的偏光层400；偏光层400包括第一折射层401、位于第一折射层401上的第二折射层402以及位于第二折射层402上的彩色滤光色阻块403和黑色矩阵404。偏光层400的结构跟图2中的偏光层203结构类似。\n\n[0036]衬底301包括叠层设置的第一柔性层、第一阻水层、第二柔性层、以及第二阻水层，第一柔性层和第二柔性层的材料分别为黄色聚酰亚胺和透明聚酰亚胺，第一阻水层和第二阻水层的材料优选为二氧化硅或氮化硅。阵列基板302为薄膜晶体管阵列基板，包括位于衬底上的缓冲层、设置于缓冲层上的多个驱动薄膜晶体管、以及设置于多个驱动薄膜晶体管上的平坦化层；发光器件层包括位于平坦化层表面的阳极、位于阳极表面的发光层、位于发光层表面的阴极，各个子像素的发光层共用一个阴极，其中，阳极通过平坦化层上的过孔与薄膜晶体管中漏极电性连接，柔性印刷电路板贴附有相应驱动芯片，外接电源的负极通过绑定区，将相应电性号传递到电源走线层，最后电源走线层将相应电性号传递到显示区中阴极层307，发光器件层定义有像素开口区和非开口区，像素开口区为倒梯形、倒三角形或者扇形中一种图形。\n\n[0037]本实施例的发光器件层包括像素定义层3031、像素定义层3032、像素定义层3033和像素定义层3034，像素定义层3031与像素定义层3032之间形成红色(R)子像素，R子像素包括阳极3041、位于阳极3041上的发光层3042以及位于发光层3042上的部分阴极层307，像素定义层3032和像素定义层3033之间形成绿色(G)子像素，G子像素包括阳极3051、位于阳极3051上的发光层3052以及位于发光层3052上的部分阴极层307，像素定义层3033与像素定义层3034之间形成蓝色(B)子像素，B子像素包括阳极3061、位于阳极3061上的发光层3062以及位于发光层3062上的部分阴极层307。\n\n[0038]彩色滤光色阻块403的R、G、B色阻块分别与发光器件层的R、G、B子像素对位设置。R子像素正上方设置有第二折射层402的凸出块4021和位于凸出块4021上的R色阻块4031，G色子像素正上方设置有第二折射层402的凸出块4022和位于凸出块4022上的G色阻块4032，B子像素正上方设置有第二折射层402的凸出块4023和位于凸出块4023上的B色阻块4033。R色阻块4031两侧设置有黑色矩阵4041和黑色矩阵4042，G色阻块4032两侧设置有黑色矩阵4042和黑色矩阵4043，B色阻块4033两侧设置有黑色矩阵4043和黑色矩阵4044。\n\n[0039]发光器件层定义有像素开口和非开口区，彩色滤光色阻块403与像素开口对应设置，朝向发光器件层一侧为凸起部；第一折射层401与非开口区对应设置。当发光器件层出射光线S10后，出射光线S10不与第一折射层201接触，直接射向第二折射层402，再次由第二折射层402射向彩色滤光色阻块403的界面上，折射角大于相应入射角，也可以提升非正视角下出光亮度和视角。当发光器件层出射光线S9后，出射光线S1射向第一折射层401的反射面时发生反射，入射角为θ1，反射角为θ2，发生反射后，再次由第二折射层402射向彩色滤光色阻块403的界面上，入射角为θ3，折射角为θ4，此时的折射角θ4大于入射角θ3，从折射后光线未与黑色矩阵4041接触，避免出射光线S9被黑色矩阵4041吸收，以此实现提升非正视角下出光亮度和视角，具体参考图4。\n\n[0040]本发明实施例提供一种显示面板，该显示面板的黑色矩阵位于相邻彩色滤光色阻块的间隙内，封装层、第一折射层的开口、第二折射层以及彩色滤光色阻块位于发光器件的出光路径上，第二折射层背向发光器件一侧形成有凹陷区，彩色滤光色阻块对应凹陷区形成有凸起部；光线由第一折射层射向第二折射层的折射角度变小，再由第二折射层射向彩色滤光色阻块的折射角度会变大，继而增加显示面板出光的角度，另外彩色滤光色阻块表面的凸起部的法线方向向发光器件的中心线靠拢，射向彩色滤光色阻块边缘的光线也会向发光器件的中心线偏移，避免出射光直射黑矩阵的情况，在保留正向视角亮度的同时，提升像素边缘侧视视角下出光亮度和视角。\n\n[0041]综上，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10933, 23987, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种驱动背板及微发光二极管显示面板的制备方法。\n\n背景技术\n\n[0002]微发光二极管显示技术与液晶显示技术、有机发光二极管显示技术相比，具有高色域、高PPI、低能耗等优势。驱动背板的品质是微发光二极管转移是否成功的重要因素，通常驱动背板需要与微发光二极管绑定，因此在制程过程中需要将驱动背板上的焊盘裸露出来，方便通过与微发光二极管连接的锡膏在回流焊工艺中形成共晶层，从而使得微发光二极管达到很好的稳定性。\n\n[0003]但是在实际生产过程中，一般焊盘材料为铜，铜在空气中易氧化，焊盘的表面在后续白油制程或者传送、运输的过程易氧化成氧化铜，影响焊盘与锡膏的焊接效果而导致微发光二极管偏移，影响微发光二极管背板的良率。\n\n发明内容\n\n[0004]本发明实施例提供一种驱动背板及微发光二极管背板的制备方法，以解决现有的驱动背板上的焊盘易发生氧化，导致绑定微发光二极管时发生偏移，影响微发光二极管背板的良率的技术问题。\n\n[0005]为解决上述问题，本发明提供的技术方案如下：\n\n[0006]本发明实施例提供一种驱动背板，包括：\n\n[0007]基板；\n\n[0008]驱动层，设置于所述基板上；\n\n[0009]绑定焊盘，设置于所述基板上；以及\n\n[0010]保护层，设置于所述绑定焊盘上；其中，\n\n[0011]所述保护层包括还原层，所述还原层用于防止所述绑定焊盘被氧化。\n\n[0012]在本发明的一种实施例中，所述保护层还包括助焊层，所述保护层包覆所述助焊层。\n\n[0013]在本发明的一种实施例中，所述还原层的材料包括柠檬酸。\n\n[0014]在本发明的一种实施例中，所述保护层的厚度为50微米～5000微米。\n\n[0015]在本发明的一种实施例中，所述还原层的厚度为10～800微米。\n\n[0016]在本发明的一种实施例中，所述驱动层包括阵列分布的薄膜晶体管，所述绑定焊盘与所述薄膜晶体管的金属层同层设置。\n\n[0017]本发明实施例还提供一种微发光二极管背板的制备方法，包括以下步骤：\n\n[0018]S10，提供一种驱动背板，所述驱动背板包括基板、设于所述基板上的驱动层、设于所述基板上的绑定焊盘、设于所述绑定焊盘上的保护层，所述保护层包括还原层，所述还原层用于防止所述绑定焊盘氧化；\n\n[0019]S20，对所述驱动背板进行加热，以使得所述还原层分解；\n\n[0020]S30，将微发光二极管与所述绑定焊盘绑定。在本发明的一种实施例中，在所述S20中，加热温度为100～200摄氏度。\n\n[0021]在本发明的一种实施例中，所述还原层的材料包括柠檬酸。\n\n[0022]在本发明的一种实施例中，所述保护层还包括助焊层，所述还原层包覆所述助焊层，所述还原层在加热后分解以裸露出所述助焊层，所述微发光二极管通过回流焊方式与所述绑定焊盘绑定。\n\n[0023]本发明的有益效果为：通过在驱动背板的绑定焊盘上设置保护层，能防止驱动背板在转运过程中绑定焊盘表面出现杂物，或切割过程中对绑定焊盘造成损伤；保护层包括还原层，该还原层在受热分解过程中生成还原性产物，该还原性产物能与绑定焊盘被氧化的表面发生还原反应，进而防止绑定焊盘被氧化；另外还原层还包覆有助焊层，在还原层受热分解后能使得助焊层裸露出来，在后续绑定焊盘与微发光二极管时，可节省助焊剂的印刷过程，从而提高作业效率。\n\n附图说明\n\n[0024]图1为本发明实施例提供的驱动背板的结构示意图；\n\n[0025]图2为本发明实施例提供的驱动背板的保护层的结构示意图；\n\n[0026]图3为本发明实施例提供的微发光二极管背板的制备方法的步骤流程图；\n\n[0027]图4为本发明实施例提供的驱动背板的驱动层的结构示意图；\n\n[0028]图5为本发明实施例提供的驱动背板在烘烤后的结构示意图；\n\n[0029]图6为本发明实施例提供的微发光二极管背板的结构示意图。\n\n具体实施方式\n\n[0030]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0031]在本申请中，除非另有明确的规定和限定，第一特征在第二特征“上”或“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0032]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0033]本发明针对现有的驱动背板，由于绑定焊盘在后续白油制程或者传送、运输过程中易发生氧化，影响后续绑定微发光二极管时绑定焊盘与锡膏的焊接效果，导致微发光二极管偏移，从而影响发光二极管背板的良率的技术问题，提出本实施例以克服该缺陷。\n\n[0034]请参阅图1，本发明实施例提供一种驱动背板100，包括基板10、驱动层20、绑定焊盘60以及保护层70，其中所述驱动层20和所述绑定焊盘60设置于所述基板10上，所述保护层70设置于所述绑定焊盘60上。\n\n[0035]请参阅图2，所述保护层70包括还原层71，所述还原层71用于防止所述绑定焊盘60氧化。\n\n[0036]具体地，一般所述绑定焊盘60为铜焊盘，铜在空气中易氧化，焊盘的表面在后续白油制程或者传送、运输的过程易氧化成氧化铜，影响焊盘与锡膏的焊接效果，因此本发明通过在绑定焊盘60上设置还原层71，还原层71在受热条件下能分解产生还原产物，还原产物与绑定焊盘的被氧化的表面发生反应，将被氧化的物质还原成原来的物质。\n\n[0037]一种实施例中，所述还原层71的材料包括柠檬酸。柠檬酸在受热条件下可分解成中间产物氢气，氢气为还原剂，可将氧化铜还原成铜，达到防止绑定焊盘60被氧化的目的，保证绑定焊盘后续与锡膏的焊接效果。\n\n[0038]具体地，本发明实施例的驱动背板100在与微发光二极管绑定之前，可先经过一道加热制程，使柠檬酸发生分解反应，分解产生的氢气起到还原氧化铜的作用，其反应原理为：柠檬酸→丙酮二羧酸+H2+CO2；CuO+H2→铜+H2O。加热温度可为100～200℃，进一步地加热温度可设置为135～160℃，优选为160℃。\n\n[0039]由于丙酮二羧酸在受热条件下不稳定，会进一步分解产生CO2、H2O和丙酮等产物，在受热条件下水和丙酮易挥发，因此柠檬酸分解得到的产物也不会影响驱动背板的性能。\n\n[0040]一种实施例中，所述保护层70还可包括助焊层72，所述助焊层72用于后续绑定焊盘60和锡膏焊接。\n\n[0041]具体地，所述还原层71可包覆所述助焊层72，在所述还原层71发生分解后释放出助焊层72中的助焊剂，可省略一道助焊剂的印刷过程，提升作业效率。\n\n[0042]一种实施例中，可采用溶胶凝胶的制备方法，来得到柠檬酸包覆助焊剂的类似于胶囊结构的保护胶，即得到所述保护层70。\n\n[0043]一种实施例中，可采用点胶、喷胶、钢网印刷等方式将保护层70制备在裸露的所述绑定焊盘60上。\n\n[0044]所述保护层70的厚度可为50～5000微米，在此范围内，保护层70可起到很好的保护绑定焊盘60的作用。\n\n[0045]一种实施例中，所述还原层71的厚度可为10～800微米。\n\n[0046]所述驱动层20用于驱动后续绑定的微发光二极管，所述驱动层20可包括阵列设置的薄膜晶体管。\n\n[0047]一种实施例中，所述绑定焊盘60可与所述薄膜晶体管的金属层同层设置，所述绑定焊盘60可与所述薄膜晶体管的其中一道金属层通过一道光刻工艺形成，以节省光罩制程。所述薄膜晶体管可包括第一金属层以及设置于第一金属层上的第二金属层。\n\n[0048]所述薄膜晶体管包括有源层22、栅极21以及源漏极层23。所述栅极21可通过第一金属层的图案化形成，所述源漏极层23可通过所述第二金属层的图案化形成。\n\n[0049]本发明实施例以背沟道刻蚀(BCE)结构的非晶硅薄膜晶体管为例，所述有源层22包括非晶硅层221和掺杂层222。具体地，所述栅极21设置于所述基板10上，所述栅极21上覆盖有栅极绝缘层30，所述非晶硅层221设置于所述栅极绝缘层30上，所述掺杂层222设置于所述非晶硅层221上，所述源漏极层23设置于所述掺杂层222上，所述源漏极层23上设置有钝化层40，所述钝化层40覆盖所述驱动层20以保护驱动层20的金属器件。\n\n[0050]一种实施例中，所述绑定焊盘60可与所述源漏极层23同层设置，可通过第二金属层的图案化来形成。\n\n[0051]所述钝化层40上开设有凹槽，所述凹槽露出所述绑定焊盘60，所述保护层70位于所述凹槽内。\n\n[0052]所述源漏极层23、所述掺杂层222以及所述非晶硅层221可通过同一掩模板来进行图案化设计，所述掩模板具有不同的透光率，以使得在不同的位置形成不同厚度的膜层。\n\n[0053]与所述绑定焊盘60对应处可保留绑定焊盘60下方的掺杂层222和非晶硅层221。\n\n[0054]进一步地，所述驱动背板100还包括COF(Chip on Film，覆晶薄膜)绑定区101，所述绑定区101内设置有ITO电极50，所述ITO电极50设置于所述COF绑定区101内的第二金属层上，所述绑定区101内的所述掺杂层222上设置有过孔，所述过孔穿过所述掺杂层和所述非晶硅层，所述COF绑定区101内的第二金属层通过所述过孔与所述第一金属层连接。\n\n[0055]请参阅图6，上述实施例的所述驱动背板100可用于微发光二极管背板1000中，将上述实施例所述的驱动背板100与微发光二极管背板1000进行绑定之前，将所述驱动背板100进行加热或烘烤，柠檬酸受热分解后将其包覆的助焊剂(助焊层72)释放出来，再将微发光二极管芯片通过助焊层72与所述绑定焊盘进行绑定制程。\n\n[0056]所述微发光二极管包括minled、microled中的任意一种。\n\n[0057]请参阅图1～图6，本发明实施例还提供一种微发光二极管背板1000的制备方法，包括以下步骤：\n\n[0058]S10，提供一种驱动背板100，所述驱动背板100包括基板10、设于所述基板10上的驱动层20、设于所述基板10上的绑定焊盘60、设于所述绑定焊盘60上的保护层70，所述保护层包括还原层71，所述还原层71用于防止所述绑定焊盘氧化。\n\n[0059]具体地，参阅图4，在基板10通过清洗、溅射、涂布、曝光、显影、蚀刻、剥离等工序形成所述驱动背板100的半成品：包括在基板10上形成驱动层20、以及绑定焊盘60。其中，所述驱动层20包括多个薄膜晶体管，所述薄膜晶体管的形成可参考现有技术的描述，这里不再赘述。\n\n[0060]其中，在本实施例中，所述绑定焊盘60与薄膜晶体管的源漏极层23同层设置。\n\n[0061]然后在所述源漏极层23上制备钝化层40，所述钝化层40包括凹槽，所述凹槽露出所述绑定焊盘60的至少部分表面，所述保护层70制备于所述凹槽内。\n\n[0062]一种实施例中，所述保护层70还包括助焊层72，所述还原层71包覆所述助焊层72。\n\n[0063]通过利用溶胶凝胶的方式来制备柠檬酸包覆助焊剂的保护胶，再通过点胶方式将保护胶制备在所述凹槽内的绑定焊盘60上以形成保护层70，从而起到防止或减少绑定焊盘在后段制程或运输过程中发生氧化或划伤。\n\n[0064]请参阅图1和图5，S20，对所述驱动背板100进行加热，以使得所述还原层71分解。\n\n[0065]其中，所述还原层71发生分解反应生成还原产物，所述还原产物与所述绑定焊盘60被氧化的表面发生还原反应，从而达到防止绑定焊盘60被氧化的目的。\n\n[0066]具体地，可对所述驱动背板100进行烘烤或加热传送的方式来实现加热目的，加热温度可控制在100～200℃，优选为135～160℃，优选为160℃。\n\n[0067]在加热条件下，柠檬酸发生分解生成还原产物氢气，氢气在受热条件下与绑定焊盘60被氧化的表面发生还原反应，将被氧化铜还原为铜，达到防止或减少绑定焊盘被氧化的目的。\n\n[0068]进一步地，当所述保护层70包括助焊层72时，所述还原层在加热后分解以裸露出所述助焊层72，助焊层72形成在所述绑定焊盘60上，从而在绑定微发光二极管时可节省一道印刷助焊剂的工序，提高作业效率。\n\n[0069]助焊层72时可包括松香等材料，助焊剂起到溶解焊母氧化膜、被焊母材再氧化、熔融焊料张力以及保护焊接母材的作用。\n\n[0070]请参阅图6，S30，将微发光二极管200与所述绑定焊盘60绑定。\n\n[0071]由于还原层71在受热分解后释放出助焊剂，因此在对驱动背板100进行加热制程后，可通过回流焊方式绑定，直接在绑定焊盘60上印刷锡膏，进行回流焊工艺，不需再印刷助焊剂，从而节省一道工序。\n\n[0072]具体地，在所述绑定焊盘60上印刷锡膏后，将微发光二极管200转印至所述绑定焊盘60上，再进行回流焊工艺，完成微发光二极管背板1000的制备。\n\n[0073]通过在驱动背板的绑定焊盘上设置保护层，能防止驱动背板在转运过程中绑定焊盘表面出现杂物，或切割过程中对绑定焊盘造成损伤；保护层包括还原层，该还原层在受热分解过程中生成还原性产物，该还原性产物能与绑定焊盘被氧化的表面发生还原反应，进而防止绑定焊盘被氧化；另外还原层还包覆有助焊层，在还原层受热分解后能使得助焊层裸露出来，在后续绑定焊盘与微发光二极管时，可节省助焊剂的印刷过程，从而提高作业效率。\n\n[0074]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0075]以上对本发明实施例所提供的一种驱动背板及微发光二极管背板的制备方法进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种驱动背板及微发光二极管显示面板的制备方法。\n\n背景技术\n\n[0002]微发光二极管显示技术与液晶显示技术、有机发光二极管显示技术相比，具有高色域、高PPI、低能耗等优势。驱动背板的品质是微发光二极管转移是否成功的重要因素，通常驱动背板需要与微发光二极管绑定，因此在制程过程中需要将驱动背板上的焊盘裸露出来，方便通过与微发光二极管连接的锡膏在回流焊工艺中形成共晶层，从而使得微发光二极管达到很好的稳定性。\n\n[0003]但是在实际生产过程中，一般焊盘材料为铜，铜在空气中易氧化，焊盘的表面在后续白油制程或者传送、运输的过程易氧化成氧化铜，影响焊盘与锡膏的焊接效果而导致微发光二极管偏移，影响微发光二极管背板的良率。\n\n发明内容\n\n[0004]本发明实施例提供一种驱动背板及微发光二极管背板的制备方法，以解决现有的驱动背板上的焊盘易发生氧化，导致绑定微发光二极管时发生偏移，影响微发光二极管背板的良率的技术问题。\n\n[0005]为解决上述问题，本发明提供的技术方案如下：\n\n[0006]本发明实施例提供一种驱动背板，包括：\n\n[0007]基板；\n\n[0008]驱动层，设置于所述基板上；\n\n[0009]绑定焊盘，设置于所述基板上；以及\n\n[0010]保护层，设置于所述绑定焊盘上；其中，\n\n[0011]所述保护层包括还原层，所述还原层用于防止所述绑定焊盘被氧化。\n\n[0012]在本发明的一种实施例中，所述保护层还包括助焊层，所述保护层包覆所述助焊层。\n\n[0013]在本发明的一种实施例中，所述还原层的材料包括柠檬酸。\n\n[0014]在本发明的一种实施例中，所述保护层的厚度为50微米～5000微米。\n\n[0015]在本发明的一种实施例中，所述还原层的厚度为10～800微米。\n\n[0016]在本发明的一种实施例中，所述驱动层包括阵列分布的薄膜晶体管，所述绑定焊盘与所述薄膜晶体管的金属层同层设置。\n\n[0017]本发明实施例还提供一种微发光二极管背板的制备方法，包括以下步骤：\n\n[0018]S10，提供一种驱动背板，所述驱动背板包括基板、设于所述基板上的驱动层、设于所述基板上的绑定焊盘、设于所述绑定焊盘上的保护层，所述保护层包括还原层，所述还原层用于防止所述绑定焊盘氧化；\n\n[0019]S20，对所述驱动背板进行加热，以使得所述还原层分解；\n\n[0020]S30，将微发光二极管与所述绑定焊盘绑定。在本发明的一种实施例中，在所述S20中，加热温度为100～200摄氏度。\n\n[0021]在本发明的一种实施例中，所述还原层的材料包括柠檬酸。\n\n[0022]在本发明的一种实施例中，所述保护层还包括助焊层，所述还原层包覆所述助焊层，所述还原层在加热后分解以裸露出所述助焊层，所述微发光二极管通过回流焊方式与所述绑定焊盘绑定。\n\n[0023]本发明的有益效果为：通过在驱动背板的绑定焊盘上设置保护层，能防止驱动背板在转运过程中绑定焊盘表面出现杂物，或切割过程中对绑定焊盘造成损伤；保护层包括还原层，该还原层在受热分解过程中生成还原性产物，该还原性产物能与绑定焊盘被氧化的表面发生还原反应，进而防止绑定焊盘被氧化；另外还原层还包覆有助焊层，在还原层受热分解后能使得助焊层裸露出来，在后续绑定焊盘与微发光二极管时，可节省助焊剂的印刷过程，从而提高作业效率。\n\n附图说明\n\n[0024]图1为本发明实施例提供的驱动背板的结构示意图；\n\n[0025]图2为本发明实施例提供的驱动背板的保护层的结构示意图；\n\n[0026]图3为本发明实施例提供的微发光二极管背板的制备方法的步骤流程图；\n\n[0027]图4为本发明实施例提供的驱动背板的驱动层的结构示意图；\n\n[0028]图5为本发明实施例提供的驱动背板在烘烤后的结构示意图；\n\n[0029]图6为本发明实施例提供的微发光二极管背板的结构示意图。\n\n具体实施方式\n\n[0030]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0031]在本申请中，除非另有明确的规定和限定，第一特征在第二特征“上”或“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0032]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0033]本发明针对现有的驱动背板，由于绑定焊盘在后续白油制程或者传送、运输过程中易发生氧化，影响后续绑定微发光二极管时绑定焊盘与锡膏的焊接效果，导致微发光二极管偏移，从而影响发光二极管背板的良率的技术问题，提出本实施例以克服该缺陷。\n\n[0034]请参阅图1，本发明实施例提供一种驱动背板100，包括基板10、驱动层20、绑定焊盘60以及保护层70，其中所述驱动层20和所述绑定焊盘60设置于所述基板10上，所述保护层70设置于所述绑定焊盘60上。\n\n[0035]请参阅图2，所述保护层70包括还原层71，所述还原层71用于防止所述绑定焊盘60氧化。\n\n[0036]具体地，一般所述绑定焊盘60为铜焊盘，铜在空气中易氧化，焊盘的表面在后续白油制程或者传送、运输的过程易氧化成氧化铜，影响焊盘与锡膏的焊接效果，因此本发明通过在绑定焊盘60上设置还原层71，还原层71在受热条件下能分解产生还原产物，还原产物与绑定焊盘的被氧化的表面发生反应，将被氧化的物质还原成原来的物质。\n\n[0037]一种实施例中，所述还原层71的材料包括柠檬酸。柠檬酸在受热条件下可分解成中间产物氢气，氢气为还原剂，可将氧化铜还原成铜，达到防止绑定焊盘60被氧化的目的，保证绑定焊盘后续与锡膏的焊接效果。\n\n[0038]具体地，本发明实施例的驱动背板100在与微发光二极管绑定之前，可先经过一道加热制程，使柠檬酸发生分解反应，分解产生的氢气起到还原氧化铜的作用，其反应原理为：柠檬酸→丙酮二羧酸+H2+CO2；CuO+H2→铜+H2O。加热温度可为100～200℃，进一步地加热温度可设置为135～160℃，优选为160℃。\n\n[0039]由于丙酮二羧酸在受热条件下不稳定，会进一步分解产生CO2、H2O和丙酮等产物，在受热条件下水和丙酮易挥发，因此柠檬酸分解得到的产物也不会影响驱动背板的性能。\n\n[0040]一种实施例中，所述保护层70还可包括助焊层72，所述助焊层72用于后续绑定焊盘60和锡膏焊接。\n\n[0041]具体地，所述还原层71可包覆所述助焊层72，在所述还原层71发生分解后释放出助焊层72中的助焊剂，可省略一道助焊剂的印刷过程，提升作业效率。\n\n[0042]一种实施例中，可采用溶胶凝胶的制备方法，来得到柠檬酸包覆助焊剂的类似于胶囊结构的保护胶，即得到所述保护层70。\n\n[0043]一种实施例中，可采用点胶、喷胶、钢网印刷等方式将保护层70制备在裸露的所述绑定焊盘60上。\n\n[0044]所述保护层70的厚度可为50～5000微米，在此范围内，保护层70可起到很好的保护绑定焊盘60的作用。\n\n[0045]一种实施例中，所述还原层71的厚度可为10～800微米。\n\n[0046]所述驱动层20用于驱动后续绑定的微发光二极管，所述驱动层20可包括阵列设置的薄膜晶体管。\n\n[0047]一种实施例中，所述绑定焊盘60可与所述薄膜晶体管的金属层同层设置，所述绑定焊盘60可与所述薄膜晶体管的其中一道金属层通过一道光刻工艺形成，以节省光罩制程。所述薄膜晶体管可包括第一金属层以及设置于第一金属层上的第二金属层。\n\n[0048]所述薄膜晶体管包括有源层22、栅极21以及源漏极层23。所述栅极21可通过第一金属层的图案化形成，所述源漏极层23可通过所述第二金属层的图案化形成。\n\n[0049]本发明实施例以背沟道刻蚀(BCE)结构的非晶硅薄膜晶体管为例，所述有源层22包括非晶硅层221和掺杂层222。具体地，所述栅极21设置于所述基板10上，所述栅极21上覆盖有栅极绝缘层30，所述非晶硅层221设置于所述栅极绝缘层30上，所述掺杂层222设置于所述非晶硅层221上，所述源漏极层23设置于所述掺杂层222上，所述源漏极层23上设置有钝化层40，所述钝化层40覆盖所述驱动层20以保护驱动层20的金属器件。\n\n[0050]一种实施例中，所述绑定焊盘60可与所述源漏极层23同层设置，可通过第二金属层的图案化来形成。\n\n[0051]所述钝化层40上开设有凹槽，所述凹槽露出所述绑定焊盘60，所述保护层70位于所述凹槽内。\n\n[0052]所述源漏极层23、所述掺杂层222以及所述非晶硅层221可通过同一掩模板来进行图案化设计，所述掩模板具有不同的透光率，以使得在不同的位置形成不同厚度的膜层。\n\n[0053]与所述绑定焊盘60对应处可保留绑定焊盘60下方的掺杂层222和非晶硅层221。\n\n[0054]进一步地，所述驱动背板100还包括COF(Chip on Film，覆晶薄膜)绑定区101，所述绑定区101内设置有ITO电极50，所述ITO电极50设置于所述COF绑定区101内的第二金属层上，所述绑定区101内的所述掺杂层222上设置有过孔，所述过孔穿过所述掺杂层和所述非晶硅层，所述COF绑定区101内的第二金属层通过所述过孔与所述第一金属层连接。\n\n[0055]请参阅图6，上述实施例的所述驱动背板100可用于微发光二极管背板1000中，将上述实施例所述的驱动背板100与微发光二极管背板1000进行绑定之前，将所述驱动背板100进行加热或烘烤，柠檬酸受热分解后将其包覆的助焊剂(助焊层72)释放出来，再将微发光二极管芯片通过助焊层72与所述绑定焊盘进行绑定制程。\n\n[0056]所述微发光二极管包括minled、microled中的任意一种。\n\n[0057]请参阅图1～图6，本发明实施例还提供一种微发光二极管背板1000的制备方法，包括以下步骤：\n\n[0058]S10，提供一种驱动背板100，所述驱动背板100包括基板10、设于所述基板10上的驱动层20、设于所述基板10上的绑定焊盘60、设于所述绑定焊盘60上的保护层70，所述保护层包括还原层71，所述还原层71用于防止所述绑定焊盘氧化。\n\n[0059]具体地，参阅图4，在基板10通过清洗、溅射、涂布、曝光、显影、蚀刻、剥离等工序形成所述驱动背板100的半成品：包括在基板10上形成驱动层20、以及绑定焊盘60。其中，所述驱动层20包括多个薄膜晶体管，所述薄膜晶体管的形成可参考现有技术的描述，这里不再赘述。\n\n[0060]其中，在本实施例中，所述绑定焊盘60与薄膜晶体管的源漏极层23同层设置。\n\n[0061]然后在所述源漏极层23上制备钝化层40，所述钝化层40包括凹槽，所述凹槽露出所述绑定焊盘60的至少部分表面，所述保护层70制备于所述凹槽内。\n\n[0062]一种实施例中，所述保护层70还包括助焊层72，所述还原层71包覆所述助焊层72。\n\n[0063]通过利用溶胶凝胶的方式来制备柠檬酸包覆助焊剂的保护胶，再通过点胶方式将保护胶制备在所述凹槽内的绑定焊盘60上以形成保护层70，从而起到防止或减少绑定焊盘在后段制程或运输过程中发生氧化或划伤。\n\n[0064]请参阅图1和图5，S20，对所述驱动背板100进行加热，以使得所述还原层71分解。\n\n[0065]其中，所述还原层71发生分解反应生成还原产物，所述还原产物与所述绑定焊盘60被氧化的表面发生还原反应，从而达到防止绑定焊盘60被氧化的目的。\n\n[0066]具体地，可对所述驱动背板100进行烘烤或加热传送的方式来实现加热目的，加热温度可控制在100～200℃，优选为135～160℃，优选为160℃。\n\n[0067]在加热条件下，柠檬酸发生分解生成还原产物氢气，氢气在受热条件下与绑定焊盘60被氧化的表面发生还原反应，将被氧化铜还原为铜，达到防止或减少绑定焊盘被氧化的目的。\n\n[0068]进一步地，当所述保护层70包括助焊层72时，所述还原层在加热后分解以裸露出所述助焊层72，助焊层72形成在所述绑定焊盘60上，从而在绑定微发光二极管时可节省一道印刷助焊剂的工序，提高作业效率。\n\n[0069]助焊层72时可包括松香等材料，助焊剂起到溶解焊母氧化膜、被焊母材再氧化、熔融焊料张力以及保护焊接母材的作用。\n\n[0070]请参阅图6，S30，将微发光二极管200与所述绑定焊盘60绑定。\n\n[0071]由于还原层71在受热分解后释放出助焊剂，因此在对驱动背板100进行加热制程后，可通过回流焊方式绑定，直接在绑定焊盘60上印刷锡膏，进行回流焊工艺，不需再印刷助焊剂，从而节省一道工序。\n\n[0072]具体地，在所述绑定焊盘60上印刷锡膏后，将微发光二极管200转印至所述绑定焊盘60上，再进行回流焊工艺，完成微发光二极管背板1000的制备。\n\n[0073]通过在驱动背板的绑定焊盘上设置保护层，能防止驱动背板在转运过程中绑定焊盘表面出现杂物，或切割过程中对绑定焊盘造成损伤；保护层包括还原层，该还原层在受热分解过程中生成还原性产物，该还原性产物能与绑定焊盘被氧化的表面发生还原反应，进而防止绑定焊盘被氧化；另外还原层还包覆有助焊层，在还原层受热分解后能使得助焊层裸露出来，在后续绑定焊盘与微发光二极管时，可节省助焊剂的印刷过程，从而提高作业效率。\n\n[0074]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0075]以上对本发明实施例所提供的一种驱动背板及微发光二极管背板的制备方法进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10934, 23988, '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种阵列基板及微型发光二极管显示面板。\n\n背景技术\n\n[0002]微型发光二极管显示面板(Micro-LED面板、Mini-LED面板)发展成未来显示技术的热点之一，和目前的LCD、OLED显示器件相比，具有反应快、高色域、高PPI、低能耗等优势。玻璃基底得益于优异的平整度，同时可以通过薄膜晶体管工艺(TFT array制程)制备有源Mini LED、有源Micro-LED(AMMini-LED、AM Micro-LED)的驱动线路，目前作为一个新兴技术正在大力发展当中。\n\n[0003]但是由于玻璃基底上的金属层很薄(通常小于1um)，因此在实际生产中Mini-LED/Micro-LED基板上的线路很容易出现刮伤，造成基板刮伤短路的问题。\n\n发明内容\n\n[0004]本申请实施例提供一种阵列基板及微型发光二极管显示面板，可以解决现有阵列基板和微型发光二极管显示面板中金属层容易出现刮伤，造成基板刮伤短路的问题。\n\n[0005]本申请实施例提供了一种阵列基板，所述阵列基板包括用于布设微型发光二极管的第一区和围绕所述第一区的第二区，所述阵列基板包括：\n\n[0006]基底；\n\n[0007]设于所述基底上的阵列功能层，所述阵列功能层包括阵列设置的焊接端子，所述焊接端子用以与所述微型发光二极管电连接；\n\n[0008]设于所述阵列功能层上的保护层，所述保护层包括第一子保护层和第二子保护层，所述第二子保护层设于所述阵列功能层上，所述第一子保护层设于所述第二子保护层上；\n\n[0009]其中，所述第一子保护层为金属氧化物层，所述第二子保护层为无机材料层或有机材料层，所述保护层位于所述第一区的部位设有通孔以暴露出对应的所述焊接端子。\n\n[0010]可选的，在本申请的一些实施例中，所述第二子保护层采用氮化硅、氧化硅、全氟丙基全氟乙烯基醚与聚四氟乙烯的共聚物中的任意一种材料或两种以上的组合材料。\n\n[0011]可选的，在本申请的一些实施例中，所述金属氧化物为ITO。\n\n[0012]可选的，在本申请的一些实施例中，所述第二子保护层的厚度为200纳米至500纳米之间。\n\n[0013]可选的，在本申请的一些实施例中，所述第一子保护层的厚度为350纳米至750纳米之间。\n\n[0014]可选的，在本申请的一些实施例中，所述第一子保护层位于所述第二区的部分还包括绑定端子，所述绑定端子用以与柔性电路板电连接。\n\n[0015]可选的，在本申请的一些实施例中，所述阵列功能层包括：\n\n[0016]设于所述基底上的第一金属层，所述第一金属层包括栅极；\n\n[0017]设于所述第一金属层上的栅极绝缘层；\n\n[0018]设于所述栅极绝缘层上的有源层；\n\n[0019]设于所述有源层上的第二金属层，所述第二金属层包括源极、漏极、以及所述焊接端子。\n\n[0020]可选的，在本申请的一些实施例中，所述第一金属层还包括第一电极；\n\n[0021]所述第二金属层还包括第二电极，所述第二电极通过贯穿所述栅极绝缘层上的第一过孔与所述第一电极电连接；\n\n[0022]所述第一子保护层包括位于所述第二区的绑定端子，所述绑定端子通过贯穿所述第二子保护层的第二过孔与所述第二电极电连接。\n\n[0023]可选的，在本申请的一些实施例中，所述有源层包括:\n\n[0024]位于所述栅极上方的半导体部；\n\n[0025]位于所述第二电极与所述栅极绝缘层之间的第一垫层部，所述第一过孔同时贯穿所述第一垫层部，所述第一垫层部的形状与所述第二电极相同；\n\n[0026]位于所述焊接端子与所述栅极绝缘层之间的第二垫层部，所述第二垫层部的形状与所述焊接端子相同。\n\n[0027]相应的，本申请实施例还提供一种微型发光二极管显示面板，在上述任一项所述的阵列基板上布设所述微型发光二极管，封装所述阵列基板以及所述微型发光二极管，形成所述微型发光二极管显示面板。\n\n[0028]本申请实施例中，在阵列功能层上方设置保护层，保护层包括第一子保护层和第二子保护层，在阵列功能层上使用无机材料层或有机材料层作为第二子保护层，在第二子保护层上使用金属氧化物作为第一子保护层，优选第一子保护层使用ITO，第二子保护层使用氮化硅，通过双层子保护层的设置，可以防止金属层出现刮伤，避免基板刮伤短路。\n\n附图说明\n\n[0029]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0030]图1是本申请一实施例提供的阵列基板的第一种截面示意图；\n\n[0031]图2是本申请一实施例提供的阵列基板的俯视示意图；\n\n[0032]图3是本申请一实施例提供的阵列基板的第二种截面示意图；\n\n[0033]图4至图8是制造本申请一实施例的阵列基板的过程示意图。\n\n具体实施方式\n\n[0034]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0035]本申请实施例提供一种阵列基板及微型发光二极管显示面板。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0036]实施例一、\n\n[0037]请参阅图1,本申请的实施例提供了一种阵列基板10，阵列基板10包括用于布设微型发光二极管的第一区AA和围绕第一区AA的第二区BB，阵列基板10包括：基底11；设于基底11上的阵列功能层，阵列功能层包括阵列设置的焊接端子164，焊接端子164用以与微型发光二极管电连接；设于阵列功能层上的保护层187，保护层187包括第一子保护层18和第二子保护层17，第二子保护层17设于阵列功能层上，第一子保护层18设于第二子保护层17上。其中，第一子保护层18为金属氧化物层，第二子保护层17为无机材料层或有机材料层，保护层187位于第一区AA的部位设有通孔193以暴露出对应的焊接端子164。\n\n[0038]具体的，第一区AA可以为或对应为显示区，第二区BB可以为或对应为非显示区，在第一区AA可以设置多个微型发光二极管与对应的焊接端子164电连接。阵列功能层包括阵列排布的薄膜晶体管(TFT)以及驱动走线等，阵列功能层为包括多个膜层的复合层结构。阵列功能层可以驱动微型发光二极管进行发光。\n\n[0039]其中，在一些实施例中，第二子保护层17采用氮化硅(SiNx)、氧化硅(SiOx)、全氟丙基全氟乙烯基醚与聚四氟乙烯的共聚物(PFA)中的任意一种材料或两种以上的组合材料，第二子保护层17还可以为其他无机或有机材料，在此不限定。\n\n[0040]其中，在一些实施例中，金属氧化物为ITO，第一子保护层18还可以为其他金属氧化物材料，例如氧化锌等。\n\n[0041]其中，在一些实施例中，第二子保护层17的厚度为200纳米至500纳米之间。\n\n[0042]其中，在一些实施例中，第一子保护层18的厚度为350纳米至750纳米之间。\n\n[0043]其中，在一些实施例中，第一子保护层18位于第二区BB的部分还包括绑定端子181，绑定端子181用以与柔性电路板电连接。\n\n[0044]具体的，绑定端子181与柔性电路板电连接，通过柔性电路板电连接供给微型发光二极管电信号，可以使得微型发光二极管发光。\n\n[0045]具体的，如图2所示，图2示意了阵列基板10的俯视图，在第一区AA中具有整面性的第一子保护层18，第一子保护层18上设有多个通孔193以暴露出对应的焊接端子164，第一子保护层18位于第二区BB的部分还包括绑定端子181。\n\n[0046]其中，请继续参阅图1，阵列功能层包括：设于基底11上的第一金属层12，第一金属层12包括栅极121；设于第一金属层12上的栅极绝缘层13；设于栅极绝缘层13上的有源层145；设于有源层145上的第二金属层16，第二金属层16包括源极161、漏极162、以及焊接端子164。\n\n[0047]其中，请继续参阅图1，第一金属层12还包括第一电极122；第二金属层16还包括第二电极163，第二电极163通过贯穿栅极绝缘层13上的第一过孔191与第一电极122电连接；第一子保护层18包括位于第二区BB的绑定端子181，绑定端子181通过贯穿第二子保护层17的第二过孔192与第二电极163电连接。\n\n[0048]具体的，有源层145包括位于薄膜晶体管的沟道部141和欧姆接触部151，沟道部141和欧姆接触部151可以为a-Si材料或金属氧化物半导体，欧姆接触部151为a-Si材料或金属氧化物半导体掺杂部位，欧姆接触部151位于源极161和漏极162的正下方，例如沟道部141为a-Si，欧姆接触部151为n+Si。有源层还可以为其他半导体材料，在此不限定。\n\n[0049]在本实施例中第二电极163与焊接端子164设于栅极绝缘层13上，并与栅极绝缘层13接触。\n\n[0050]如下面表格展示了第一子保护层和第二子保护层不同厚度条件下的抗刮伤验证结果，设置第一子保护层厚度为300nm、第二子保护层厚度为600nm的条件的抗刮伤能力优于条件1和条件3。\n\n[0051]\n\n[0052]\n\n[0053]本申请实施例中，在阵列功能层上方设置保护层，保护层包括第一子保护层和第二子保护层，在阵列功能层上使用无机材料层或有机材料层作为第二子保护层，在第二子保护层上使用金属氧化物作为第一子保护层，优选第一子保护层使用ITO，第二子保护层使用氮化硅，通过双层子保护层的设置，阵列基板表现出了优异的抗刮伤能力，可以防止金属层出现刮伤，避免基板刮伤短路。\n\n[0054]实施例二、\n\n[0055]请参阅图3,本申请的实施例提供了一种阵列基板10，阵列基板10包括用于布设微型发光二极管的第一区AA和围绕第一区AA的第二区BB，阵列基板10包括：基底11；设于基底11上的阵列功能层，阵列功能层包括阵列设置的焊接端子164，焊接端子164用以与微型发光二极管电连接；设于阵列功能层上的保护层187，保护层187包括第一子保护层18和第二子保护层17，第二子保护层17设于阵列功能层上，第一子保护层18设于第二子保护层17上。其中，第一子保护层18为金属氧化物层，第二子保护层17为无机材料层或有机材料层，保护层187位于第一区AA的部位设有通孔193以暴露出对应的焊接端子164。\n\n[0056]具体的，第一区AA可以为或对应为显示区，第二区BB可以为或对应为非显示区，在第一区AA可以设置多个微型发光二极管与对应的焊接端子164电连接。阵列功能层包括阵列排布的薄膜晶体管(TFT)以及驱动走线等，阵列功能层为包括多个膜层的复合层结构。阵列功能层可以驱动微型发光二极管进行发光。\n\n[0057]其中，在一些实施例中，第二子保护层17采用氮化硅(SiNx)、氧化硅(SiOx)、全氟丙基全氟乙烯基醚与聚四氟乙烯的共聚物(PFA)中的任意一种材料或两种以上的组合材料，第二子保护层17还可以为其他无机或有机材料，在此不限定。\n\n[0058]其中，在一些实施例中，金属氧化物为ITO，第一子保护层18还可以为其他金属氧化物材料，例如氧化锌等。\n\n[0059]其中，在一些实施例中，第二子保护层17的厚度为200纳米至500纳米之间。\n\n[0060]其中，在一些实施例中，第一子保护层18的厚度为350纳米至750纳米之间。\n\n[0061]其中，在一些实施例中，第一子保护层18位于第二区BB的部分还包括绑定端子181，绑定端子181用以与柔性电路板电连接。\n\n[0062]具体的，绑定端子181与柔性电路板电连接，通过柔性电路板电连接供给微型发光二极管电信号，可以使得微型发光二极管发光。\n\n[0063]具体的，如图2所示，图2示意了阵列基板10的俯视图，在第一区AA中具有整面性的第一子保护层18，第一子保护层18上设有多个通孔193以暴露出对应的焊接端子164，第一子保护层18位于第二区BB的部分还包括绑定端子181。\n\n[0064]其中，请继续参阅图3，阵列功能层包括：设于基底11上的第一金属层12，第一金属层12包括栅极121；设于第一金属层12上的栅极绝缘层13；设于栅极绝缘层13上的有源层145；设于有源层145上的第二金属层16，第二金属层16包括源极161、漏极162、以及焊接端子164。\n\n[0065]其中，请继续参阅图3，第一金属层12还包括第一电极122；第二金属层16还包括第二电极163，第二电极163通过贯穿栅极绝缘层13上的第一过孔191与第一电极122电连接；第一子保护层18包括位于第二区BB的绑定端子181，绑定端子181通过贯穿第二子保护层17的第二过孔192与第二电极163电连接。\n\n[0066]其中，请继续参阅图3，有源层145包括位于栅极121上方半导体部，半导体部包括沟道部141和欧姆接触部151；位于第二电极163与栅极绝缘层13之间的第一垫层部，第一垫层部包括与沟道部141同层的第一子垫层部142，以及与欧姆接触部151同层的第二子垫层部152，第一过孔191同时贯穿第一垫层部，使得第二电极163通过贯穿第一垫层部和栅极绝缘层13的第一过孔191电连接于第一电极122，第一垫层部的形状与第二电极163的形状相同。有源层145还包括位于焊接端子164与栅极绝缘层13之间的第二垫层部，第二垫层部包括与沟道部141同层的第三子垫层部143，以及与欧姆接触部151同层的第四子垫层部153，第二垫层部的形状与焊接端子164的形状相同。\n\n[0067]具体的，有源层145包括位于薄膜晶体管的沟道部141和欧姆接触部151，沟道部141和欧姆接触部151可以为a-Si材料或金属氧化物半导体，欧姆接触部151为a-Si材料或金属氧化物半导体掺杂部位，例如沟道部141为a-Si，欧姆接触部151为n+Si。有源层还可以为其他半导体材料，在此不限定。\n\n[0068]在本实施例中第二电极163与栅极绝缘层13之间还有有源层145制作的第一垫层部，第一垫层部的形状与第二电极163的形状相同。在本实施例中焊接端子164与栅极绝缘层13之间还有有源层145制作的第二垫层部，第二垫层部的形状与焊接端子164的形状相同。\n\n[0069]需要说明的是，有源层145包括第一子有源层14和第二子有源层15，第二子有源层15为有源层145掺杂的部位，例如，当有源层145采用非晶硅制作时，第一子有源层14为a-Si，第二子有源层15为n+Si。第一子有源层14包括沟道部141、第一子垫层部142、第三子垫层部143，第二子有源层15包括欧姆接触部151、第二子垫层部152、第四子垫层部153。\n\n[0070]实施例三、\n\n[0071]请参阅图4、图5、图6、图7、图8、图3,示意了实施例二中的阵列基板10的一种制作过程，但阵列基板10还可以采用其他工艺或光罩顺序制作，在此不做限定。\n\n[0072]具体的，实施例二中的阵列基板10的一种制作过程包括：第一道光罩，如图4所示，在基底11上形成第一金属层12，第一金属层12被图案化包括栅极121和第一电极122；第二道光罩，如图5所示，在第一金属层12上形成栅极绝缘层13，在栅极绝缘层13上形成有源层145，有源层145上表面进行掺杂工艺，有源层145可以为非晶硅或金属氧化物，有源层145包括第一子有源层14和第二子有源层15，在栅极绝缘层13、有源层145上形成第一过孔191；第三道光罩，如图6、图7所示，在有源层145上形成第二金属层16，采用halftone光罩(半灰阶光罩，半色调光罩)将第二金属层16和有源层145图案化，第二金属层16图案化后包括源极161、漏极162、第二电极163、以及焊接端子164，同时有源层145也被图案化包括第一垫层部、第二垫层部、薄膜晶体管的沟道部141和欧姆接触部151，第一垫层部包括与沟道部141同层的第一子垫层部142，以及与欧姆接触部151同层的第二子垫层部152，第一垫层部的形状与第二电极163的形状相同，第二垫层部包括与沟道部141同层的第三子垫层部143，以及与欧姆接触部151同层的第四子垫层部153，第二垫层部的形状与焊接端子164的形状相同；第四道光罩，如图8所示，在第二金属层16上形成第二子保护层17，并将第二子保护层17图案化形成位于第一区AA的通孔193、位于第二区BB的第二过孔192；第五道光罩，如图3所示，在第二子保护层17上形成第一子保护层18，并将第一子保护层18图案化形成位于第二区BB的绑定端子181和位于第一区AA的整面保护层结构，绑定端子181通过贯穿第二子保护层17的第二过孔192与第二电极163电连接。\n\n[0073]实施例四、\n\n[0074]基于上述实施例，本申请实施例还提供一种微型发光二极管显示面板，在上述任一项的阵列基板上布设微型发光二极管，微型发光二极管与对应的焊接端子164电连接，封装阵列基板以及微型发光二极管，形成微型发光二极管显示面板。\n\n[0075]在本申请提供的实施例中，在阵列功能层上方设置保护层，保护层包括第一子保护层和第二子保护层，在阵列功能层上使用无机材料层或有机材料层作为第二子保护层，在第二子保护层上使用金属氧化物作为第一子保护层，优选第一子保护层使用ITO，第二子保护层使用氮化硅，通过双层子保护层的设置，阵列基板表现出了优异的抗刮伤能力，可以防止金属层出现刮伤，避免基板刮伤短路。\n\n[0076]以上对本申请实施例所提供的一种阵列基板及微型发光二极管显示面板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种阵列基板及微型发光二极管显示面板。\n\n背景技术\n\n[0002]微型发光二极管显示面板(Micro-LED面板、Mini-LED面板)发展成未来显示技术的热点之一，和目前的LCD、OLED显示器件相比，具有反应快、高色域、高PPI、低能耗等优势。玻璃基底得益于优异的平整度，同时可以通过薄膜晶体管工艺(TFT array制程)制备有源Mini LED、有源Micro-LED(AMMini-LED、AM Micro-LED)的驱动线路，目前作为一个新兴技术正在大力发展当中。\n\n[0003]但是由于玻璃基底上的金属层很薄(通常小于1um)，因此在实际生产中Mini-LED/Micro-LED基板上的线路很容易出现刮伤，造成基板刮伤短路的问题。\n\n发明内容\n\n[0004]本申请实施例提供一种阵列基板及微型发光二极管显示面板，可以解决现有阵列基板和微型发光二极管显示面板中金属层容易出现刮伤，造成基板刮伤短路的问题。\n\n[0005]本申请实施例提供了一种阵列基板，所述阵列基板包括用于布设微型发光二极管的第一区和围绕所述第一区的第二区，所述阵列基板包括：\n\n[0006]基底；\n\n[0007]设于所述基底上的阵列功能层，所述阵列功能层包括阵列设置的焊接端子，所述焊接端子用以与所述微型发光二极管电连接；\n\n[0008]设于所述阵列功能层上的保护层，所述保护层包括第一子保护层和第二子保护层，所述第二子保护层设于所述阵列功能层上，所述第一子保护层设于所述第二子保护层上；\n\n[0009]其中，所述第一子保护层为金属氧化物层，所述第二子保护层为无机材料层或有机材料层，所述保护层位于所述第一区的部位设有通孔以暴露出对应的所述焊接端子。\n\n[0010]可选的，在本申请的一些实施例中，所述第二子保护层采用氮化硅、氧化硅、全氟丙基全氟乙烯基醚与聚四氟乙烯的共聚物中的任意一种材料或两种以上的组合材料。\n\n[0011]可选的，在本申请的一些实施例中，所述金属氧化物为ITO。\n\n[0012]可选的，在本申请的一些实施例中，所述第二子保护层的厚度为200纳米至500纳米之间。\n\n[0013]可选的，在本申请的一些实施例中，所述第一子保护层的厚度为350纳米至750纳米之间。\n\n[0014]可选的，在本申请的一些实施例中，所述第一子保护层位于所述第二区的部分还包括绑定端子，所述绑定端子用以与柔性电路板电连接。\n\n[0015]可选的，在本申请的一些实施例中，所述阵列功能层包括：\n\n[0016]设于所述基底上的第一金属层，所述第一金属层包括栅极；\n\n[0017]设于所述第一金属层上的栅极绝缘层；\n\n[0018]设于所述栅极绝缘层上的有源层；\n\n[0019]设于所述有源层上的第二金属层，所述第二金属层包括源极、漏极、以及所述焊接端子。\n\n[0020]可选的，在本申请的一些实施例中，所述第一金属层还包括第一电极；\n\n[0021]所述第二金属层还包括第二电极，所述第二电极通过贯穿所述栅极绝缘层上的第一过孔与所述第一电极电连接；\n\n[0022]所述第一子保护层包括位于所述第二区的绑定端子，所述绑定端子通过贯穿所述第二子保护层的第二过孔与所述第二电极电连接。\n\n[0023]可选的，在本申请的一些实施例中，所述有源层包括:\n\n[0024]位于所述栅极上方的半导体部；\n\n[0025]位于所述第二电极与所述栅极绝缘层之间的第一垫层部，所述第一过孔同时贯穿所述第一垫层部，所述第一垫层部的形状与所述第二电极相同；\n\n[0026]位于所述焊接端子与所述栅极绝缘层之间的第二垫层部，所述第二垫层部的形状与所述焊接端子相同。\n\n[0027]相应的，本申请实施例还提供一种微型发光二极管显示面板，在上述任一项所述的阵列基板上布设所述微型发光二极管，封装所述阵列基板以及所述微型发光二极管，形成所述微型发光二极管显示面板。\n\n[0028]本申请实施例中，在阵列功能层上方设置保护层，保护层包括第一子保护层和第二子保护层，在阵列功能层上使用无机材料层或有机材料层作为第二子保护层，在第二子保护层上使用金属氧化物作为第一子保护层，优选第一子保护层使用ITO，第二子保护层使用氮化硅，通过双层子保护层的设置，可以防止金属层出现刮伤，避免基板刮伤短路。\n\n附图说明\n\n[0029]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0030]图1是本申请一实施例提供的阵列基板的第一种截面示意图；\n\n[0031]图2是本申请一实施例提供的阵列基板的俯视示意图；\n\n[0032]图3是本申请一实施例提供的阵列基板的第二种截面示意图；\n\n[0033]图4至图8是制造本申请一实施例的阵列基板的过程示意图。\n\n具体实施方式\n\n[0034]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0035]本申请实施例提供一种阵列基板及微型发光二极管显示面板。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0036]实施例一、\n\n[0037]请参阅图1,本申请的实施例提供了一种阵列基板10，阵列基板10包括用于布设微型发光二极管的第一区AA和围绕第一区AA的第二区BB，阵列基板10包括：基底11；设于基底11上的阵列功能层，阵列功能层包括阵列设置的焊接端子164，焊接端子164用以与微型发光二极管电连接；设于阵列功能层上的保护层187，保护层187包括第一子保护层18和第二子保护层17，第二子保护层17设于阵列功能层上，第一子保护层18设于第二子保护层17上。其中，第一子保护层18为金属氧化物层，第二子保护层17为无机材料层或有机材料层，保护层187位于第一区AA的部位设有通孔193以暴露出对应的焊接端子164。\n\n[0038]具体的，第一区AA可以为或对应为显示区，第二区BB可以为或对应为非显示区，在第一区AA可以设置多个微型发光二极管与对应的焊接端子164电连接。阵列功能层包括阵列排布的薄膜晶体管(TFT)以及驱动走线等，阵列功能层为包括多个膜层的复合层结构。阵列功能层可以驱动微型发光二极管进行发光。\n\n[0039]其中，在一些实施例中，第二子保护层17采用氮化硅(SiNx)、氧化硅(SiOx)、全氟丙基全氟乙烯基醚与聚四氟乙烯的共聚物(PFA)中的任意一种材料或两种以上的组合材料，第二子保护层17还可以为其他无机或有机材料，在此不限定。\n\n[0040]其中，在一些实施例中，金属氧化物为ITO，第一子保护层18还可以为其他金属氧化物材料，例如氧化锌等。\n\n[0041]其中，在一些实施例中，第二子保护层17的厚度为200纳米至500纳米之间。\n\n[0042]其中，在一些实施例中，第一子保护层18的厚度为350纳米至750纳米之间。\n\n[0043]其中，在一些实施例中，第一子保护层18位于第二区BB的部分还包括绑定端子181，绑定端子181用以与柔性电路板电连接。\n\n[0044]具体的，绑定端子181与柔性电路板电连接，通过柔性电路板电连接供给微型发光二极管电信号，可以使得微型发光二极管发光。\n\n[0045]具体的，如图2所示，图2示意了阵列基板10的俯视图，在第一区AA中具有整面性的第一子保护层18，第一子保护层18上设有多个通孔193以暴露出对应的焊接端子164，第一子保护层18位于第二区BB的部分还包括绑定端子181。\n\n[0046]其中，请继续参阅图1，阵列功能层包括：设于基底11上的第一金属层12，第一金属层12包括栅极121；设于第一金属层12上的栅极绝缘层13；设于栅极绝缘层13上的有源层145；设于有源层145上的第二金属层16，第二金属层16包括源极161、漏极162、以及焊接端子164。\n\n[0047]其中，请继续参阅图1，第一金属层12还包括第一电极122；第二金属层16还包括第二电极163，第二电极163通过贯穿栅极绝缘层13上的第一过孔191与第一电极122电连接；第一子保护层18包括位于第二区BB的绑定端子181，绑定端子181通过贯穿第二子保护层17的第二过孔192与第二电极163电连接。\n\n[0048]具体的，有源层145包括位于薄膜晶体管的沟道部141和欧姆接触部151，沟道部141和欧姆接触部151可以为a-Si材料或金属氧化物半导体，欧姆接触部151为a-Si材料或金属氧化物半导体掺杂部位，欧姆接触部151位于源极161和漏极162的正下方，例如沟道部141为a-Si，欧姆接触部151为n+Si。有源层还可以为其他半导体材料，在此不限定。\n\n[0049]在本实施例中第二电极163与焊接端子164设于栅极绝缘层13上，并与栅极绝缘层13接触。\n\n[0050]如下面表格展示了第一子保护层和第二子保护层不同厚度条件下的抗刮伤验证结果，设置第一子保护层厚度为300nm、第二子保护层厚度为600nm的条件的抗刮伤能力优于条件1和条件3。\n\n[0051]\n\n[0052]\n\n[0053]本申请实施例中，在阵列功能层上方设置保护层，保护层包括第一子保护层和第二子保护层，在阵列功能层上使用无机材料层或有机材料层作为第二子保护层，在第二子保护层上使用金属氧化物作为第一子保护层，优选第一子保护层使用ITO，第二子保护层使用氮化硅，通过双层子保护层的设置，阵列基板表现出了优异的抗刮伤能力，可以防止金属层出现刮伤，避免基板刮伤短路。\n\n[0054]实施例二、\n\n[0055]请参阅图3,本申请的实施例提供了一种阵列基板10，阵列基板10包括用于布设微型发光二极管的第一区AA和围绕第一区AA的第二区BB，阵列基板10包括：基底11；设于基底11上的阵列功能层，阵列功能层包括阵列设置的焊接端子164，焊接端子164用以与微型发光二极管电连接；设于阵列功能层上的保护层187，保护层187包括第一子保护层18和第二子保护层17，第二子保护层17设于阵列功能层上，第一子保护层18设于第二子保护层17上。其中，第一子保护层18为金属氧化物层，第二子保护层17为无机材料层或有机材料层，保护层187位于第一区AA的部位设有通孔193以暴露出对应的焊接端子164。\n\n[0056]具体的，第一区AA可以为或对应为显示区，第二区BB可以为或对应为非显示区，在第一区AA可以设置多个微型发光二极管与对应的焊接端子164电连接。阵列功能层包括阵列排布的薄膜晶体管(TFT)以及驱动走线等，阵列功能层为包括多个膜层的复合层结构。阵列功能层可以驱动微型发光二极管进行发光。\n\n[0057]其中，在一些实施例中，第二子保护层17采用氮化硅(SiNx)、氧化硅(SiOx)、全氟丙基全氟乙烯基醚与聚四氟乙烯的共聚物(PFA)中的任意一种材料或两种以上的组合材料，第二子保护层17还可以为其他无机或有机材料，在此不限定。\n\n[0058]其中，在一些实施例中，金属氧化物为ITO，第一子保护层18还可以为其他金属氧化物材料，例如氧化锌等。\n\n[0059]其中，在一些实施例中，第二子保护层17的厚度为200纳米至500纳米之间。\n\n[0060]其中，在一些实施例中，第一子保护层18的厚度为350纳米至750纳米之间。\n\n[0061]其中，在一些实施例中，第一子保护层18位于第二区BB的部分还包括绑定端子181，绑定端子181用以与柔性电路板电连接。\n\n[0062]具体的，绑定端子181与柔性电路板电连接，通过柔性电路板电连接供给微型发光二极管电信号，可以使得微型发光二极管发光。\n\n[0063]具体的，如图2所示，图2示意了阵列基板10的俯视图，在第一区AA中具有整面性的第一子保护层18，第一子保护层18上设有多个通孔193以暴露出对应的焊接端子164，第一子保护层18位于第二区BB的部分还包括绑定端子181。\n\n[0064]其中，请继续参阅图3，阵列功能层包括：设于基底11上的第一金属层12，第一金属层12包括栅极121；设于第一金属层12上的栅极绝缘层13；设于栅极绝缘层13上的有源层145；设于有源层145上的第二金属层16，第二金属层16包括源极161、漏极162、以及焊接端子164。\n\n[0065]其中，请继续参阅图3，第一金属层12还包括第一电极122；第二金属层16还包括第二电极163，第二电极163通过贯穿栅极绝缘层13上的第一过孔191与第一电极122电连接；第一子保护层18包括位于第二区BB的绑定端子181，绑定端子181通过贯穿第二子保护层17的第二过孔192与第二电极163电连接。\n\n[0066]其中，请继续参阅图3，有源层145包括位于栅极121上方半导体部，半导体部包括沟道部141和欧姆接触部151；位于第二电极163与栅极绝缘层13之间的第一垫层部，第一垫层部包括与沟道部141同层的第一子垫层部142，以及与欧姆接触部151同层的第二子垫层部152，第一过孔191同时贯穿第一垫层部，使得第二电极163通过贯穿第一垫层部和栅极绝缘层13的第一过孔191电连接于第一电极122，第一垫层部的形状与第二电极163的形状相同。有源层145还包括位于焊接端子164与栅极绝缘层13之间的第二垫层部，第二垫层部包括与沟道部141同层的第三子垫层部143，以及与欧姆接触部151同层的第四子垫层部153，第二垫层部的形状与焊接端子164的形状相同。\n\n[0067]具体的，有源层145包括位于薄膜晶体管的沟道部141和欧姆接触部151，沟道部141和欧姆接触部151可以为a-Si材料或金属氧化物半导体，欧姆接触部151为a-Si材料或金属氧化物半导体掺杂部位，例如沟道部141为a-Si，欧姆接触部151为n+Si。有源层还可以为其他半导体材料，在此不限定。\n\n[0068]在本实施例中第二电极163与栅极绝缘层13之间还有有源层145制作的第一垫层部，第一垫层部的形状与第二电极163的形状相同。在本实施例中焊接端子164与栅极绝缘层13之间还有有源层145制作的第二垫层部，第二垫层部的形状与焊接端子164的形状相同。\n\n[0069]需要说明的是，有源层145包括第一子有源层14和第二子有源层15，第二子有源层15为有源层145掺杂的部位，例如，当有源层145采用非晶硅制作时，第一子有源层14为a-Si，第二子有源层15为n+Si。第一子有源层14包括沟道部141、第一子垫层部142、第三子垫层部143，第二子有源层15包括欧姆接触部151、第二子垫层部152、第四子垫层部153。\n\n[0070]实施例三、\n\n[0071]请参阅图4、图5、图6、图7、图8、图3,示意了实施例二中的阵列基板10的一种制作过程，但阵列基板10还可以采用其他工艺或光罩顺序制作，在此不做限定。\n\n[0072]具体的，实施例二中的阵列基板10的一种制作过程包括：第一道光罩，如图4所示，在基底11上形成第一金属层12，第一金属层12被图案化包括栅极121和第一电极122；第二道光罩，如图5所示，在第一金属层12上形成栅极绝缘层13，在栅极绝缘层13上形成有源层145，有源层145上表面进行掺杂工艺，有源层145可以为非晶硅或金属氧化物，有源层145包括第一子有源层14和第二子有源层15，在栅极绝缘层13、有源层145上形成第一过孔191；第三道光罩，如图6、图7所示，在有源层145上形成第二金属层16，采用halftone光罩(半灰阶光罩，半色调光罩)将第二金属层16和有源层145图案化，第二金属层16图案化后包括源极161、漏极162、第二电极163、以及焊接端子164，同时有源层145也被图案化包括第一垫层部、第二垫层部、薄膜晶体管的沟道部141和欧姆接触部151，第一垫层部包括与沟道部141同层的第一子垫层部142，以及与欧姆接触部151同层的第二子垫层部152，第一垫层部的形状与第二电极163的形状相同，第二垫层部包括与沟道部141同层的第三子垫层部143，以及与欧姆接触部151同层的第四子垫层部153，第二垫层部的形状与焊接端子164的形状相同；第四道光罩，如图8所示，在第二金属层16上形成第二子保护层17，并将第二子保护层17图案化形成位于第一区AA的通孔193、位于第二区BB的第二过孔192；第五道光罩，如图3所示，在第二子保护层17上形成第一子保护层18，并将第一子保护层18图案化形成位于第二区BB的绑定端子181和位于第一区AA的整面保护层结构，绑定端子181通过贯穿第二子保护层17的第二过孔192与第二电极163电连接。\n\n[0073]实施例四、\n\n[0074]基于上述实施例，本申请实施例还提供一种微型发光二极管显示面板，在上述任一项的阵列基板上布设微型发光二极管，微型发光二极管与对应的焊接端子164电连接，封装阵列基板以及微型发光二极管，形成微型发光二极管显示面板。\n\n[0075]在本申请提供的实施例中，在阵列功能层上方设置保护层，保护层包括第一子保护层和第二子保护层，在阵列功能层上使用无机材料层或有机材料层作为第二子保护层，在第二子保护层上使用金属氧化物作为第一子保护层，优选第一子保护层使用ITO，第二子保护层使用氮化硅，通过双层子保护层的设置，阵列基板表现出了优异的抗刮伤能力，可以防止金属层出现刮伤，避免基板刮伤短路。\n\n[0076]以上对本申请实施例所提供的一种阵列基板及微型发光二极管显示面板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10935, 23989, '技术领域\n\n[0001]本发明涉及显示领域，具体涉及一种像素驱动电路、像素驱动方法及显示装置。\n\n背景技术\n\n[0002]近年来，发光二极管(Light-Emitting Diode，LED)显示技术因其具有高色域、高对比度等特性逐渐成为人们研究的对象。\n\n[0003]在LED显示技术中，传统的无源矩阵驱动方式(Passive Matrix，PM)需要非常大的瞬态电流，对电源及功耗都有很高的要求。而有源式矩阵驱动方式(Active Matrix，AM)通过薄膜晶体管(Thin Film Transistor，TFT)开关和电容逐行扫描进行LED点亮，可以有效避免大瞬态电流的问题。随着AM驱动的发展，一些技术问题开始显露，比如由于长时间工作，驱动TFT会发生阈值电压的偏移，从而引起LED电流的衰减；显示面板内讯号线的电压降(IR-drop)以及LED灯的非均一性会造成面板LED间电流差异，从而导致宏观上产生肉眼可见的显示不均现象(Mura)。\n\n发明内容\n\n[0004]本发明实施例提供一种像素驱动电路、像素驱动方法及显示装置，能够实现同时对阈值电压、讯号线压降以及LED的均一性进行补偿，避免由于驱动晶体管阈值电压偏移、显示面板内讯号线的电压降以及LED灯的非均一性而造成面板LED间电流差异，提升显示装置的稳定性。\n\n[0005]本发明实施例提供一种像素驱动电路，包括第一薄膜晶体管、第三薄膜晶体管、第四薄膜晶体管、第一电容、第二电容和发光二极管，\n\n[0006]所述第一薄膜晶体管的栅极连接第一节点G，所述第一薄膜晶体管的第一极连接第二节点D，所述第一薄膜晶体管的第二极连接第三节点S；\n\n[0007]所述第三薄膜晶体管的栅极接入第二扫描信号，所述第三薄膜晶体管的第一极接入所述数据信号，所述第三薄膜晶体管的第二极连接所述第二电容的第一电极板；\n\n[0008]所述第四薄膜晶体管的栅极接入第四扫描信号，所述第四薄膜晶体管的第一极连接所述第一节点G，所述第四薄膜晶体管的第二极连接所述第二节点D；\n\n[0009]所述第一电容的第一电极板连接所述第一节点G，所述第一电容的第二电极板连接所述第三节点S；\n\n[0010]所述第二电容的第一电极板连接所述第三薄膜晶体管的第二极，所述第二电容的第二电极板连接所述第一节点G；\n\n[0011]所述发光二极管的正极连接所述第三节点S，所述发光二极管的负极接入公共电信号。\n\n[0012]可选的，在本发明的一些实施例中，所述像素驱动电路还包括第二薄膜晶体管、第五薄膜晶体管和第六薄膜晶体管，\n\n[0013]所述第二薄膜晶体管的栅极接入第一扫描信号，所述第二薄膜晶体管的第一极接入数据信号，所述第二薄膜晶体管的第二极连接所述第三节点S；\n\n[0014]所述第五薄膜晶体管的栅极接入发光控制信号，所述第五薄膜晶体管的第一极接入电源信号，所述第五薄膜晶体管的第二极连接所述第二节点D；\n\n[0015]所述第六薄膜晶体管的栅极接入第三扫描信号，所述第六薄膜晶体管的第一极接入电源信号，所述第六薄膜晶体管的第二极连接所述第一节点G。\n\n[0016]可选的，在本发明的一些实施例中，所述第一薄膜晶体管、所述第二薄膜晶体管、所述第三薄膜晶体管、所述第四薄膜晶体管、所述第五薄膜晶体管、所述第六薄膜晶体管分别为单晶硅薄膜晶体管、多晶硅薄膜晶体管、非晶硅薄膜晶体管、氧化物薄膜晶体管、低温多晶硅氧化物晶体管和有机薄膜晶体管中的任意一种。\n\n[0017]可选的，在本发明的一些实施例中，所述第一薄膜晶体管、所述第二薄膜晶体管、所述第三薄膜晶体管、所述第四薄膜晶体管、所述第五薄膜晶体管、所述第六薄膜晶体管为N型晶体管和P型晶体管中的任意一种。\n\n[0018]可选的，在本发明的一些实施例中，所述第一薄膜晶体管、所述第二薄膜晶体管、所述第三薄膜晶体管、所述第四薄膜晶体管、所述第五薄膜晶体管和所述第六薄膜晶体管均为N型晶体管。\n\n[0019]可选的，在本发明的一些实施例中，所述发光二极管包括LED、mini-LED、micro-LED、OLED中的任意一种。\n\n[0020]可选的，在本发明的一些实施例中，所述发光二极管包括发光二极管电容和发光二极管晶体管。\n\n[0021]可选的，在本发明的一些实施例中，所述发光二极管电容和所述发光二极管晶体管并联。\n\n[0022]同时，本发明实施例还提供一种像素驱动方法，所述像素驱动方法采用本发明实施例提供的所述像素驱动电路对像素进行驱动，所述像素驱动方法包括四个阶段：\n\n[0023]初始化阶段，对所述第一节点G的电压和所述第三节点S的电压进行初始化；\n\n[0024]阈值电压侦测阶段，所述第四扫描信号为有效电平，所述第四膜晶体管导通以侦测所述第一薄膜晶体管的阈值电压；\n\n[0025]数据写入阶段，所述第二扫描信号为有效电平，所述第三薄膜晶体管导通以向所述第一节点G写入数据电压，所述第一电容与所述发光二极管串联；\n\n[0026]发光阶段，所述第一薄膜晶体管导通，电源信号通过所述第一薄膜晶体管传输至所述发光二极管。\n\n[0027]相应的，本发明实施例还提供一种显示装置，包括本发明任意一种实施例提供的像素驱动电路。\n\n[0028]本发明实施例提供一种像素驱动电路、像素驱动方法及显示装置，该像素驱动电路包括第一薄膜晶体管、第三薄膜晶体管、第四薄膜晶体管、第一电容、第二电容和发光二极管，在阈值电压侦测阶段通过第四膜晶体管对第一薄膜晶体管的阈值电压进行侦测，在数据写入阶段通过第三薄膜晶体管对第一节点G写入数据电压，同时通过第一电容与发光二极管串联，以发光二极管的电容削弱第一节点G的电位变化对第三节点S的耦合作用，一定程度上稳定第三节点的电位，在最后的发光阶段，通过第一电容与发光二极管的共同作用同时实现了对阈值电压、讯号线压降以及LED均一性的补偿，避免了由于驱动晶体管阈值电压偏移、显示面板内讯号线的电压降以及LED灯的非均一性而造成面板LED间电流差异，提升了显示装置的稳定性。\n\n附图说明\n\n[0029]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0030]图1是本发明实施例提供的像素驱动电路的电路图；\n\n[0031]图2是本发明实施例提供的像素驱动电路的时序图。\n\n具体实施方式\n\n[0032]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本发明，并不用于限制本发明。在本发明中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0033]本发明实施例提供一种像素驱动电路、像素驱动方法及显示装置，以同时实现了对阈值电压、讯号线压降以及LED均一性的补偿，避免由于驱动晶体管阈值电压偏移、显示面板内讯号线的电压降以及LED灯的非均一性而造成面板LED间电流差异，提升显示装置的稳定性。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0034]在一种实施例中，请参照图1所示，图1示出了本发明实施例提供的像素驱动电路的电路图。如图所示，本发明实施例提供的像素驱动电路包括第一薄膜晶体管T1、第二薄膜晶体管T2、第三薄膜晶体管T3、第四薄膜晶体管T4、第五薄膜晶体管T5、第六薄膜晶体管T6、第一电容C1、第二电容C2和发光二极管LED，还包括第一扫描线、第二扫描线、第三扫描线、第四扫描线、发光控制信号线、数据信号线、电源信号线和公共信号线，其中，\n\n[0035]第一薄膜晶体管T1的栅极连接第一节点G，第一薄膜晶体管T1的第一极连接第二节点D，第一薄膜晶体管T1的第二极连接第三节点S；\n\n[0036]第二薄膜晶体管T2的栅极连接第一扫描线并接入第一扫描信号SCAN1，第二薄膜晶体管T2的第一极连接数据信号线并接入数据信号DATA，第二薄膜晶体管T2的第二极连接第三节点S；\n\n[0037]第三薄膜晶体管T3的栅极连接第二扫描线并接入第二扫描信号SCAN2，第三薄膜晶体管T3的第一极连接数据信号线并接入数据信号DATA，第三薄膜晶体管T3的第二极连接第二电容C2的第一电极板；\n\n[0038]第四薄膜晶体管T4的栅极连接第四扫描线并接入第四扫描信号SCAN4，第四薄膜晶体管T4的第一极连接第一节点G，第四薄膜晶体管的第二极连接第二节点D；\n\n[0039]第五薄膜晶体管T5的栅极连接发光控制信号线并接入发光控制信号EM，第五薄膜晶体管T5的第一极连接电源信号线并接入电源信号VDD，第五薄膜晶体管T5的第二极连接第二节点D；\n\n[0040]第六薄膜晶体管T6的栅极连接第三扫描信号线并接入第三扫描信号SCAN3，第六薄膜晶体管T6的第一极连接电源信号线并接入电源信号VDD，第六薄膜晶体管T6的第二极连接第一节点G；\n\n[0041]第一电容C1的第一电极板连接第一节点G，第一电容C1的第二电极板连接第三节点S；\n\n[0042]第二电容C2的第一电极板连接第三薄膜晶体管T3的第二极，第二电容C2的第二电极板连接第一节点G；\n\n[0043]发光二极管LED的正极连接第三节点S，发光二极管LED的负极连接公共信号线接入公共电信号VSS。\n\n[0044]具体的，在该像素驱动电路中，第一扫描信号SCAN1控制第二薄膜晶体管T2的打开与关闭，第二扫描信号SCAN2控制第三薄膜晶体管T3的打开与关闭，第三扫描信号SCAN3控制第六薄膜晶体管T6的打开与关闭，第四扫描信号SCAN4控制第四薄膜晶体管T4的打开与关闭，发光控制信号EM控制第五薄膜晶体管T5的打开与关闭；\n\n[0045]第一薄膜晶体管T1为驱动晶体管，用于在G点电压的控制下驱动发光二极管LED发光；\n\n[0046]第二薄膜晶体管T2为第一初始化晶体管，用于在第一扫描信号SCAN1的控制下初始化第三节点S的电压；\n\n[0047]第三薄膜晶体管T3为数据写入晶体管，用于在第二扫描信号SCAN2的控制下向第一节点G写入数据信号；\n\n[0048]第四薄膜晶体管T4为侦测晶体管，用于在第四扫描信号SCAN4的控制下侦测驱动晶体管T1的阈值电压；\n\n[0049]第五薄膜晶体管T5为开关晶体管，用于在发光控制信号EM的控制下控制第一薄膜晶体管T1和电源信号VDD之间电路的导通或断开；\n\n[0050]第六薄膜晶体管T6为第二初始化晶体管，用于在第三扫描信号SCAN3的控制下初始化第一节点G的电压；\n\n[0051]第一电容C1为存储电容，用于存储第一节点G点的电压信号；\n\n[0052]第二电容C2为数据写入电容，用于向第一节点G写入数据信号；\n\n[0053]发光二极管LED包括发光二极管电容和发光二极管晶体管，发光二极管电容和发光二极管晶体管并联后两端分别与第三第一节点G、公共信号线连接，在本发明提供的实施例中，发光二极管泛指一切包括二极管结构的发光显示元件，包括但不限于LED、mini-LED、micro-LED、OLED。\n\n[0054]在本发明提供的实施例中，第一薄膜晶体管T1、第二薄膜晶体管T2、第三薄膜晶体管T3、第四薄膜晶体管T4、第五薄膜晶体管T5和第六薄膜晶体管T6可以分别是单晶硅薄膜晶体管、多晶硅薄膜晶体管、非晶硅薄膜晶体管、氧化物薄膜晶体管、低温多晶硅氧化物晶体管和有机薄膜晶体管中的任意一种，在此不做限定。\n\n[0055]在本发明提供的实施例中，第一薄膜晶体管T1、第二薄膜晶体管T2、第三薄膜晶体管T3、第四薄膜晶体管T4、第五薄膜晶体管T5和第六薄膜晶体管T6还可以分别是N型晶体管或P型晶体管中的任意一种，在此不做限定。其中，薄膜晶体管的第一极和第二极可以分别是第一极为源极且第二极为漏极，也可以是第一极为漏极且第二极为源极。\n\n[0056]在一种实施例中，图1所示的像素驱动电路中，第一薄膜晶体管T1、第二薄膜晶体管T2、第三薄膜晶体管T3、第四薄膜晶体管T4、第五薄膜晶体管T5和第六薄膜晶体管T6均为N型晶体管，薄膜晶体管的第一极为漏极且第二极为源极。第一薄膜晶体管T1、第二薄膜晶体管T2、第三薄膜晶体管T3、第四薄膜晶体管T4、第五薄膜晶体管T5和第六薄膜晶体管T6均是当栅极电压为高电位且漏极电压为高电位时导通。\n\n[0057]相应的，本发明实施例提供一种像素驱动方法，该像素驱动方法采用本发明任意一种实施例提供像素驱动电路对像素进行驱动，下面结合图1所示的像素驱动电路和图2所示的像素驱动电路的时序图，对本发明实施例提供的像素驱动方法进行详细的介绍。在一种实施例中，在图1所示的像素驱动电路中，第一薄膜晶体管T1、第二薄膜晶体管T2、第三薄膜晶体管T3、第四薄膜晶体管T4、第五薄膜晶体管T5和第六薄膜晶体管T6均为N型晶体管，薄膜晶体管的第一极为漏极且第二极为源极。本发明实施例提供像素驱动方法包括初始化阶段P1、阈值电压侦测阶段P2、数据写入阶段P3和发光阶段P4共四个阶段。\n\n[0058]在初始化阶段P1，第一扫描信号SCAN1、第二扫描信号SCNA2和第三扫描信号SCAN3为高电平，第四扫描信号SCAN4为低电平，数据信号DATA为低电平，发光控制信号EM为低电平，因此第二薄膜晶体管T2、第三薄膜晶体管T3和第六薄膜晶体管T6分别导通，第四薄膜晶体管T4和第五薄膜晶体管T5分别断开；电源信号VDD通过第六薄膜晶体管T6写入第一节点G，由于第二电容C2的存在，低电位的数据信号DATA_L无法在该阶段内通过第三薄膜晶体管T3写入第一节点G，低电位的数据信号DATA_L通过第二薄膜晶体管T2写入第三节点S，因此，在初始化阶段P1，第一节点G的电压初始化为电源信号电压VDD，第三节点S的电位初始化为低电位的数据信号电压DATA_L。\n\n[0059]在阈值电压侦测阶段P2，第一扫描信号SCAN1、第二扫描信号SCNA2维持高电平，第三扫描信号SCAN3由高电平变为低电平，第四扫描信号SCAN4由低电平变为高电平，数据信号DATA维持低电平，发光控制信号EM维持低电平，因此第二薄膜晶体管T2和第三薄膜晶体管T3持续导通，第五薄膜晶体管T5和第六薄膜晶体管T6断开，第四薄膜晶体管T4导通从而形成二极管结构，侦测第一薄膜晶体管T1的阈值电压Vth，低电位的数据信号DATA_L通过第三薄膜晶体管T3写入第一节点G，第一节点G的电压由电源信号电压VDD变为DATA_L+Vth，第三节点S的电压保持低电位的数据信号电压DATA_L。\n\n[0060]在数据写入阶段P3，第一扫描信号SCAN1由高电平变为低电平，第二扫描信号SCAN2维持高电平，第三扫描信号SCAN3维持低电平，第四扫描信号SCAN4由高电平变为低电平，数据信号DATA由高电平变为低电平，发光控制信号EM由高电平变为低电平，因此第二薄膜晶体管T2、第四薄膜晶体管T4、第五薄膜晶体管T5和第六薄膜晶体管T6断开，第三薄膜晶体管T3持续导通；高电位的数据信号DATA_H通过第三薄膜晶体管T3写入第一节点G，第一节点G的电压由DATA_L+Vth变为DATA_H+Vth，由于第一电容C1与二极管电容C_LED串联，第三节点S的电压变为(DATA_H-DATA_L)*C1/(C1+C_LED)；\n\n[0061]在发光阶段P4，第一扫描信号SCAN1维持低电平，第二扫描信号SCAN2由高电位变为低电平，第三扫描信号SCAN3维持低电平，第四扫描信号SCAN4维持低电平，数据信号DATA由高电平变为低电平，发光控制信号EM由低电平变为高电平，因此第二薄膜晶体管T2、第三薄膜晶体管T3、第四薄膜晶体管T4和第六薄膜晶体管T6断开，第五薄膜晶体管T5和第一薄膜晶体管T1导通；电源信号VDD通过第五薄膜晶体管T5输入到第一薄膜晶体管的第一极，公共电信号VSS写入发光二极管LED的负极，即写入发光二极管电容的第二电极板，因此，第三节点S的电压变为V_LED+VSS，第一节点G的电压变为DATA_H+Vth-(DATA_H-DATA_L)*C1/(C1+C_LED)+V_LED+VSS，则Vgs-Vth＝DATA_H-(DATA_H-DATA_L)*C1/(C1+C_LED)。\n\n[0062]由此可知，在发光阶段，发光二极管LED的驱动电压与发光二极管LED的电容、驱动晶体管T1的阈值电压、电源电压或公共电压均无关，换而言之，本发明实施例提供的像素驱动电路同时实现了对阈值电压、讯号线压降以及LED均一性的补偿，同时避免了由于驱动晶体管阈值电压偏移、显示面板内讯号线的电压降以及LED灯的非均一性而造成面板LED间电流差异，从而导致显示不均的现象，提升了显示装置的稳定性。\n\n[0063]相应的，本发明实施例还提供一种显示装置，该显示装置包括本发明实施例提供的任意一种像素驱动电路，该像素驱动电路用于实施本发明实施例提供的任意一种像素驱动方法，本发明实施例提供的显示装置具备本发明实施例提供的任意一种像素驱动电路及像素驱动方法的技术特征和技术效果，具体实施方式及工作原理请参照上述具体实施例，在此不再赘述。\n\n[0064]综上所述，本发明实施例提供一种像素驱动电路、像素驱动方法及显示装置，该像素驱动电路包括第一薄膜晶体管、第三薄膜晶体管、第四薄膜晶体管、第一电容、第二电容和发光二极管，在阈值电压侦测阶段通过第四膜晶体管对第一薄膜晶体管的阈值电压进行侦测，在数据写入阶段通过第三薄膜晶体管对第一节点G写入数据电压，同时通过第一电容与发光二极管串联，以发光二极管的电容削弱第一节点G的电位变化对第三节点S的耦合作用，一定程度上稳定第三节点的电位，在最后的发光阶段，通过第一电容与发光二极管的共同作用同时实现了对阈值电压、讯号线压降以及LED均一性的补偿，避免了由于驱动晶体管阈值电压偏移、显示面板内讯号线的电压降以及LED灯的非均一性而造成面板LED间电流差异，提升了显示装置的稳定性。\n\n[0065]以上对本发明实施例所提供的像素驱动电路、像素驱动方法及显示装置进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。', '技术领域\n\n[0001]本发明涉及显示领域，具体涉及一种像素驱动电路、像素驱动方法及显示装置。\n\n背景技术\n\n[0002]近年来，发光二极管(Light-Emitting Diode，LED)显示技术因其具有高色域、高对比度等特性逐渐成为人们研究的对象。\n\n[0003]在LED显示技术中，传统的无源矩阵驱动方式(Passive Matrix，PM)需要非常大的瞬态电流，对电源及功耗都有很高的要求。而有源式矩阵驱动方式(Active Matrix，AM)通过薄膜晶体管(Thin Film Transistor，TFT)开关和电容逐行扫描进行LED点亮，可以有效避免大瞬态电流的问题。随着AM驱动的发展，一些技术问题开始显露，比如由于长时间工作，驱动TFT会发生阈值电压的偏移，从而引起LED电流的衰减；显示面板内讯号线的电压降(IR-drop)以及LED灯的非均一性会造成面板LED间电流差异，从而导致宏观上产生肉眼可见的显示不均现象(Mura)。\n\n发明内容\n\n[0004]本发明实施例提供一种像素驱动电路、像素驱动方法及显示装置，能够实现同时对阈值电压、讯号线压降以及LED的均一性进行补偿，避免由于驱动晶体管阈值电压偏移、显示面板内讯号线的电压降以及LED灯的非均一性而造成面板LED间电流差异，提升显示装置的稳定性。\n\n[0005]本发明实施例提供一种像素驱动电路，包括第一薄膜晶体管、第三薄膜晶体管、第四薄膜晶体管、第一电容、第二电容和发光二极管，\n\n[0006]所述第一薄膜晶体管的栅极连接第一节点G，所述第一薄膜晶体管的第一极连接第二节点D，所述第一薄膜晶体管的第二极连接第三节点S；\n\n[0007]所述第三薄膜晶体管的栅极接入第二扫描信号，所述第三薄膜晶体管的第一极接入所述数据信号，所述第三薄膜晶体管的第二极连接所述第二电容的第一电极板；\n\n[0008]所述第四薄膜晶体管的栅极接入第四扫描信号，所述第四薄膜晶体管的第一极连接所述第一节点G，所述第四薄膜晶体管的第二极连接所述第二节点D；\n\n[0009]所述第一电容的第一电极板连接所述第一节点G，所述第一电容的第二电极板连接所述第三节点S；\n\n[0010]所述第二电容的第一电极板连接所述第三薄膜晶体管的第二极，所述第二电容的第二电极板连接所述第一节点G；\n\n[0011]所述发光二极管的正极连接所述第三节点S，所述发光二极管的负极接入公共电信号。\n\n[0012]可选的，在本发明的一些实施例中，所述像素驱动电路还包括第二薄膜晶体管、第五薄膜晶体管和第六薄膜晶体管，\n\n[0013]所述第二薄膜晶体管的栅极接入第一扫描信号，所述第二薄膜晶体管的第一极接入数据信号，所述第二薄膜晶体管的第二极连接所述第三节点S；\n\n[0014]所述第五薄膜晶体管的栅极接入发光控制信号，所述第五薄膜晶体管的第一极接入电源信号，所述第五薄膜晶体管的第二极连接所述第二节点D；\n\n[0015]所述第六薄膜晶体管的栅极接入第三扫描信号，所述第六薄膜晶体管的第一极接入电源信号，所述第六薄膜晶体管的第二极连接所述第一节点G。\n\n[0016]可选的，在本发明的一些实施例中，所述第一薄膜晶体管、所述第二薄膜晶体管、所述第三薄膜晶体管、所述第四薄膜晶体管、所述第五薄膜晶体管、所述第六薄膜晶体管分别为单晶硅薄膜晶体管、多晶硅薄膜晶体管、非晶硅薄膜晶体管、氧化物薄膜晶体管、低温多晶硅氧化物晶体管和有机薄膜晶体管中的任意一种。\n\n[0017]可选的，在本发明的一些实施例中，所述第一薄膜晶体管、所述第二薄膜晶体管、所述第三薄膜晶体管、所述第四薄膜晶体管、所述第五薄膜晶体管、所述第六薄膜晶体管为N型晶体管和P型晶体管中的任意一种。\n\n[0018]可选的，在本发明的一些实施例中，所述第一薄膜晶体管、所述第二薄膜晶体管、所述第三薄膜晶体管、所述第四薄膜晶体管、所述第五薄膜晶体管和所述第六薄膜晶体管均为N型晶体管。\n\n[0019]可选的，在本发明的一些实施例中，所述发光二极管包括LED、mini-LED、micro-LED、OLED中的任意一种。\n\n[0020]可选的，在本发明的一些实施例中，所述发光二极管包括发光二极管电容和发光二极管晶体管。\n\n[0021]可选的，在本发明的一些实施例中，所述发光二极管电容和所述发光二极管晶体管并联。\n\n[0022]同时，本发明实施例还提供一种像素驱动方法，所述像素驱动方法采用本发明实施例提供的所述像素驱动电路对像素进行驱动，所述像素驱动方法包括四个阶段：\n\n[0023]初始化阶段，对所述第一节点G的电压和所述第三节点S的电压进行初始化；\n\n[0024]阈值电压侦测阶段，所述第四扫描信号为有效电平，所述第四膜晶体管导通以侦测所述第一薄膜晶体管的阈值电压；\n\n[0025]数据写入阶段，所述第二扫描信号为有效电平，所述第三薄膜晶体管导通以向所述第一节点G写入数据电压，所述第一电容与所述发光二极管串联；\n\n[0026]发光阶段，所述第一薄膜晶体管导通，电源信号通过所述第一薄膜晶体管传输至所述发光二极管。\n\n[0027]相应的，本发明实施例还提供一种显示装置，包括本发明任意一种实施例提供的像素驱动电路。\n\n[0028]本发明实施例提供一种像素驱动电路、像素驱动方法及显示装置，该像素驱动电路包括第一薄膜晶体管、第三薄膜晶体管、第四薄膜晶体管、第一电容、第二电容和发光二极管，在阈值电压侦测阶段通过第四膜晶体管对第一薄膜晶体管的阈值电压进行侦测，在数据写入阶段通过第三薄膜晶体管对第一节点G写入数据电压，同时通过第一电容与发光二极管串联，以发光二极管的电容削弱第一节点G的电位变化对第三节点S的耦合作用，一定程度上稳定第三节点的电位，在最后的发光阶段，通过第一电容与发光二极管的共同作用同时实现了对阈值电压、讯号线压降以及LED均一性的补偿，避免了由于驱动晶体管阈值电压偏移、显示面板内讯号线的电压降以及LED灯的非均一性而造成面板LED间电流差异，提升了显示装置的稳定性。\n\n附图说明\n\n[0029]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0030]图1是本发明实施例提供的像素驱动电路的电路图；\n\n[0031]图2是本发明实施例提供的像素驱动电路的时序图。\n\n具体实施方式\n\n[0032]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本发明，并不用于限制本发明。在本发明中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0033]本发明实施例提供一种像素驱动电路、像素驱动方法及显示装置，以同时实现了对阈值电压、讯号线压降以及LED均一性的补偿，避免由于驱动晶体管阈值电压偏移、显示面板内讯号线的电压降以及LED灯的非均一性而造成面板LED间电流差异，提升显示装置的稳定性。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0034]在一种实施例中，请参照图1所示，图1示出了本发明实施例提供的像素驱动电路的电路图。如图所示，本发明实施例提供的像素驱动电路包括第一薄膜晶体管T1、第二薄膜晶体管T2、第三薄膜晶体管T3、第四薄膜晶体管T4、第五薄膜晶体管T5、第六薄膜晶体管T6、第一电容C1、第二电容C2和发光二极管LED，还包括第一扫描线、第二扫描线、第三扫描线、第四扫描线、发光控制信号线、数据信号线、电源信号线和公共信号线，其中，\n\n[0035]第一薄膜晶体管T1的栅极连接第一节点G，第一薄膜晶体管T1的第一极连接第二节点D，第一薄膜晶体管T1的第二极连接第三节点S；\n\n[0036]第二薄膜晶体管T2的栅极连接第一扫描线并接入第一扫描信号SCAN1，第二薄膜晶体管T2的第一极连接数据信号线并接入数据信号DATA，第二薄膜晶体管T2的第二极连接第三节点S；\n\n[0037]第三薄膜晶体管T3的栅极连接第二扫描线并接入第二扫描信号SCAN2，第三薄膜晶体管T3的第一极连接数据信号线并接入数据信号DATA，第三薄膜晶体管T3的第二极连接第二电容C2的第一电极板；\n\n[0038]第四薄膜晶体管T4的栅极连接第四扫描线并接入第四扫描信号SCAN4，第四薄膜晶体管T4的第一极连接第一节点G，第四薄膜晶体管的第二极连接第二节点D；\n\n[0039]第五薄膜晶体管T5的栅极连接发光控制信号线并接入发光控制信号EM，第五薄膜晶体管T5的第一极连接电源信号线并接入电源信号VDD，第五薄膜晶体管T5的第二极连接第二节点D；\n\n[0040]第六薄膜晶体管T6的栅极连接第三扫描信号线并接入第三扫描信号SCAN3，第六薄膜晶体管T6的第一极连接电源信号线并接入电源信号VDD，第六薄膜晶体管T6的第二极连接第一节点G；\n\n[0041]第一电容C1的第一电极板连接第一节点G，第一电容C1的第二电极板连接第三节点S；\n\n[0042]第二电容C2的第一电极板连接第三薄膜晶体管T3的第二极，第二电容C2的第二电极板连接第一节点G；\n\n[0043]发光二极管LED的正极连接第三节点S，发光二极管LED的负极连接公共信号线接入公共电信号VSS。\n\n[0044]具体的，在该像素驱动电路中，第一扫描信号SCAN1控制第二薄膜晶体管T2的打开与关闭，第二扫描信号SCAN2控制第三薄膜晶体管T3的打开与关闭，第三扫描信号SCAN3控制第六薄膜晶体管T6的打开与关闭，第四扫描信号SCAN4控制第四薄膜晶体管T4的打开与关闭，发光控制信号EM控制第五薄膜晶体管T5的打开与关闭；\n\n[0045]第一薄膜晶体管T1为驱动晶体管，用于在G点电压的控制下驱动发光二极管LED发光；\n\n[0046]第二薄膜晶体管T2为第一初始化晶体管，用于在第一扫描信号SCAN1的控制下初始化第三节点S的电压；\n\n[0047]第三薄膜晶体管T3为数据写入晶体管，用于在第二扫描信号SCAN2的控制下向第一节点G写入数据信号；\n\n[0048]第四薄膜晶体管T4为侦测晶体管，用于在第四扫描信号SCAN4的控制下侦测驱动晶体管T1的阈值电压；\n\n[0049]第五薄膜晶体管T5为开关晶体管，用于在发光控制信号EM的控制下控制第一薄膜晶体管T1和电源信号VDD之间电路的导通或断开；\n\n[0050]第六薄膜晶体管T6为第二初始化晶体管，用于在第三扫描信号SCAN3的控制下初始化第一节点G的电压；\n\n[0051]第一电容C1为存储电容，用于存储第一节点G点的电压信号；\n\n[0052]第二电容C2为数据写入电容，用于向第一节点G写入数据信号；\n\n[0053]发光二极管LED包括发光二极管电容和发光二极管晶体管，发光二极管电容和发光二极管晶体管并联后两端分别与第三第一节点G、公共信号线连接，在本发明提供的实施例中，发光二极管泛指一切包括二极管结构的发光显示元件，包括但不限于LED、mini-LED、micro-LED、OLED。\n\n[0054]在本发明提供的实施例中，第一薄膜晶体管T1、第二薄膜晶体管T2、第三薄膜晶体管T3、第四薄膜晶体管T4、第五薄膜晶体管T5和第六薄膜晶体管T6可以分别是单晶硅薄膜晶体管、多晶硅薄膜晶体管、非晶硅薄膜晶体管、氧化物薄膜晶体管、低温多晶硅氧化物晶体管和有机薄膜晶体管中的任意一种，在此不做限定。\n\n[0055]在本发明提供的实施例中，第一薄膜晶体管T1、第二薄膜晶体管T2、第三薄膜晶体管T3、第四薄膜晶体管T4、第五薄膜晶体管T5和第六薄膜晶体管T6还可以分别是N型晶体管或P型晶体管中的任意一种，在此不做限定。其中，薄膜晶体管的第一极和第二极可以分别是第一极为源极且第二极为漏极，也可以是第一极为漏极且第二极为源极。\n\n[0056]在一种实施例中，图1所示的像素驱动电路中，第一薄膜晶体管T1、第二薄膜晶体管T2、第三薄膜晶体管T3、第四薄膜晶体管T4、第五薄膜晶体管T5和第六薄膜晶体管T6均为N型晶体管，薄膜晶体管的第一极为漏极且第二极为源极。第一薄膜晶体管T1、第二薄膜晶体管T2、第三薄膜晶体管T3、第四薄膜晶体管T4、第五薄膜晶体管T5和第六薄膜晶体管T6均是当栅极电压为高电位且漏极电压为高电位时导通。\n\n[0057]相应的，本发明实施例提供一种像素驱动方法，该像素驱动方法采用本发明任意一种实施例提供像素驱动电路对像素进行驱动，下面结合图1所示的像素驱动电路和图2所示的像素驱动电路的时序图，对本发明实施例提供的像素驱动方法进行详细的介绍。在一种实施例中，在图1所示的像素驱动电路中，第一薄膜晶体管T1、第二薄膜晶体管T2、第三薄膜晶体管T3、第四薄膜晶体管T4、第五薄膜晶体管T5和第六薄膜晶体管T6均为N型晶体管，薄膜晶体管的第一极为漏极且第二极为源极。本发明实施例提供像素驱动方法包括初始化阶段P1、阈值电压侦测阶段P2、数据写入阶段P3和发光阶段P4共四个阶段。\n\n[0058]在初始化阶段P1，第一扫描信号SCAN1、第二扫描信号SCNA2和第三扫描信号SCAN3为高电平，第四扫描信号SCAN4为低电平，数据信号DATA为低电平，发光控制信号EM为低电平，因此第二薄膜晶体管T2、第三薄膜晶体管T3和第六薄膜晶体管T6分别导通，第四薄膜晶体管T4和第五薄膜晶体管T5分别断开；电源信号VDD通过第六薄膜晶体管T6写入第一节点G，由于第二电容C2的存在，低电位的数据信号DATA_L无法在该阶段内通过第三薄膜晶体管T3写入第一节点G，低电位的数据信号DATA_L通过第二薄膜晶体管T2写入第三节点S，因此，在初始化阶段P1，第一节点G的电压初始化为电源信号电压VDD，第三节点S的电位初始化为低电位的数据信号电压DATA_L。\n\n[0059]在阈值电压侦测阶段P2，第一扫描信号SCAN1、第二扫描信号SCNA2维持高电平，第三扫描信号SCAN3由高电平变为低电平，第四扫描信号SCAN4由低电平变为高电平，数据信号DATA维持低电平，发光控制信号EM维持低电平，因此第二薄膜晶体管T2和第三薄膜晶体管T3持续导通，第五薄膜晶体管T5和第六薄膜晶体管T6断开，第四薄膜晶体管T4导通从而形成二极管结构，侦测第一薄膜晶体管T1的阈值电压Vth，低电位的数据信号DATA_L通过第三薄膜晶体管T3写入第一节点G，第一节点G的电压由电源信号电压VDD变为DATA_L+Vth，第三节点S的电压保持低电位的数据信号电压DATA_L。\n\n[0060]在数据写入阶段P3，第一扫描信号SCAN1由高电平变为低电平，第二扫描信号SCAN2维持高电平，第三扫描信号SCAN3维持低电平，第四扫描信号SCAN4由高电平变为低电平，数据信号DATA由高电平变为低电平，发光控制信号EM由高电平变为低电平，因此第二薄膜晶体管T2、第四薄膜晶体管T4、第五薄膜晶体管T5和第六薄膜晶体管T6断开，第三薄膜晶体管T3持续导通；高电位的数据信号DATA_H通过第三薄膜晶体管T3写入第一节点G，第一节点G的电压由DATA_L+Vth变为DATA_H+Vth，由于第一电容C1与二极管电容C_LED串联，第三节点S的电压变为(DATA_H-DATA_L)*C1/(C1+C_LED)；\n\n[0061]在发光阶段P4，第一扫描信号SCAN1维持低电平，第二扫描信号SCAN2由高电位变为低电平，第三扫描信号SCAN3维持低电平，第四扫描信号SCAN4维持低电平，数据信号DATA由高电平变为低电平，发光控制信号EM由低电平变为高电平，因此第二薄膜晶体管T2、第三薄膜晶体管T3、第四薄膜晶体管T4和第六薄膜晶体管T6断开，第五薄膜晶体管T5和第一薄膜晶体管T1导通；电源信号VDD通过第五薄膜晶体管T5输入到第一薄膜晶体管的第一极，公共电信号VSS写入发光二极管LED的负极，即写入发光二极管电容的第二电极板，因此，第三节点S的电压变为V_LED+VSS，第一节点G的电压变为DATA_H+Vth-(DATA_H-DATA_L)*C1/(C1+C_LED)+V_LED+VSS，则Vgs-Vth＝DATA_H-(DATA_H-DATA_L)*C1/(C1+C_LED)。\n\n[0062]由此可知，在发光阶段，发光二极管LED的驱动电压与发光二极管LED的电容、驱动晶体管T1的阈值电压、电源电压或公共电压均无关，换而言之，本发明实施例提供的像素驱动电路同时实现了对阈值电压、讯号线压降以及LED均一性的补偿，同时避免了由于驱动晶体管阈值电压偏移、显示面板内讯号线的电压降以及LED灯的非均一性而造成面板LED间电流差异，从而导致显示不均的现象，提升了显示装置的稳定性。\n\n[0063]相应的，本发明实施例还提供一种显示装置，该显示装置包括本发明实施例提供的任意一种像素驱动电路，该像素驱动电路用于实施本发明实施例提供的任意一种像素驱动方法，本发明实施例提供的显示装置具备本发明实施例提供的任意一种像素驱动电路及像素驱动方法的技术特征和技术效果，具体实施方式及工作原理请参照上述具体实施例，在此不再赘述。\n\n[0064]综上所述，本发明实施例提供一种像素驱动电路、像素驱动方法及显示装置，该像素驱动电路包括第一薄膜晶体管、第三薄膜晶体管、第四薄膜晶体管、第一电容、第二电容和发光二极管，在阈值电压侦测阶段通过第四膜晶体管对第一薄膜晶体管的阈值电压进行侦测，在数据写入阶段通过第三薄膜晶体管对第一节点G写入数据电压，同时通过第一电容与发光二极管串联，以发光二极管的电容削弱第一节点G的电位变化对第三节点S的耦合作用，一定程度上稳定第三节点的电位，在最后的发光阶段，通过第一电容与发光二极管的共同作用同时实现了对阈值电压、讯号线压降以及LED均一性的补偿，避免了由于驱动晶体管阈值电压偏移、显示面板内讯号线的电压降以及LED灯的非均一性而造成面板LED间电流差异，提升了显示装置的稳定性。\n\n[0065]以上对本发明实施例所提供的像素驱动电路、像素驱动方法及显示装置进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10936, 23990, '技术领域\n\n[0001]本发明涉及显示领域，特别是涉及一种背光驱动电路及其控制方法、显示面板、电子装置。\n\n背景技术\n\n[0002]AM-miniled(Active miniature Light Emitting Diode，有源式迷你发光二极管)技术以薄膜晶体管(TFT，Thin Film Transistor)作为背光驱动电路，实现主动矩阵式(Active-matrix，AM-miniLED)驱动，将miniLED的潜力发挥到极致。而AM-miniled在使用中也存在着一些问题。\n\n[0003]例如，AM-miniled的背光还存在着局部会出现暗区的现象，引发这一现象出现的原因在于AM-miniled的背光采用2T1C像素背光驱动电路，其中一个TFT设置在控制单元内，另一个TFT设置在发光单元内，位于控制单元内的TFT同时连接扫描信号和数据信号，在高温长时间工作后，该TFT的稳定性不佳，其阈值电压会产生漂移，使得在下一周期开启后，数据电压经过所述控制单元内的TFT后传递给发光单元内的TFT的电压减小，无法打开设置在所述发光单元内的TFT，导致发光单元内的发光晶体管无法导通，进而使得AM-miniled无法发光。\n\n[0004]因此，现有的AM-miniled技术中，还存在着背光驱动电路中控制单元内的TFT阈值电压漂移，导致AM-miniled无法发光的问题，急需改进。\n\n发明内容\n\n[0005]本发明涉及一种背光驱动电路及其控制方法、显示面板、电子装置，用于解决现有技术中存在着背光驱动电路中控制单元内的TFT阈值电压漂移，导致AM-miniled无法发光的问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]第一方面，本发明提供的一种背光驱动电路，包括：发光单元，扫描控制单元和发光控制单元；\n\n[0008]所述发光单元电性连接于第一电源电压线和第二电源电压线之间；\n\n[0009]所述发光控制单元的输入端和输出端串联于所述发光单元、所述第一电源电压线和所述第二电源电压线组成的回路中；\n\n[0010]所述扫描控制单元包括第一晶体管和第二晶体管，所述第一晶体管和所述第二晶体管中的每个的输入端和输出端电性连接于数据线和所述发光控制单元的控制端之间，所述第一晶体管和所述第二晶体管中的每个的控制端电性连接于对应的扫描线以使得所述第一晶体管和所述第二晶体管交替导通。\n\n[0011]在一些实施例中，所述第一晶体管的所述控制端电性连接于所述背光驱动电路对应的本级扫描线，所述第二晶体管的所述控制端电性连接于下一级所述扫描线。\n\n[0012]在一些实施例中，所述发光控制单元包括第三晶体管，所述第三晶体管的输入端和输出端为所述发光控制单元的所述输入端和所述输出端，所述第一晶体管的控制端为所述发光控制单元的所述控制端。\n\n[0013]在一些实施例中，还包括电容，所述电容的第一极板电性连接于所述第一晶体管和所述第二晶体管中的每个的所述输入端和所述输出端中与所述发光控制单元的所述控制端电性连接的一个，所述电容的第二极板电性连接于所述第二电源电压线。\n\n[0014]在一些实施例中，所述第一晶体管和所述第二晶体管为薄膜晶体管，所述第三晶体管为场效应晶体管。\n\n[0015]在一些实施例中，所述第一电源电压线用于加载第一电源电压，所述第二电源电压线用于加载所述第二电源电压，所述第二电源电压小于所述第一电源电压。\n\n[0016]在一些实施例中，所述发光单元为迷你发光二极管。\n\n[0017]第二方面，本发明提供一种背光驱动电路的控制方法，用于控制如上述任一项所述的背光驱动电路，包括：向电性连接于所述第一晶体管和所述第二晶体管的两所述控制端的两所述扫描线提供不同的扫描信号，使得所述第一晶体管和所述第二晶体管交替导通。\n\n[0018]第三方面，本发明提供一种显示面板，包括：\n\n[0019]第一电源电压线和第二电源电压线；\n\n[0020]多条数据线和多条扫描线，相互交叉设置；\n\n[0021]多个如上述任一项所述的背光驱动电路。\n\n[0022]第四方面，本发明还提供一种电子装置，包括上述所述的显示面板。\n\n[0023]与现有技术相比，本发明提供的一种背光驱动电路及其控制方法、显示面板、电子装置的有益效果为：\n\n[0024]本发明提供的背光驱动电路，包括：发光单元、扫描控制单元和发光控制单元；所述发光单元电性连接于第一电源电压线和第二电源电压线之间；所述发光控制单元的输入端和输出端串联于所述发光单元、所述第一电源电压线和所述第二电源电压线组成的回路中；所述扫描控制单元包括第一晶体管和第二晶体管，所述第一晶体管和所述第二晶体管中的每个的输入端和输出端电性连接于数据线和所述发光控制单元的控制端之间，所述第一晶体管和所述第二晶体管中的每个的控制端电性连接于对应的扫描线以使得所述第一晶体管和所述第二晶体管交替导通；增加了扫描控制单元内的晶体管的数量，以使得各晶体管交替驱动发光控制单元发光，提高背光驱动电路的稳定性并延长其寿命。\n\n附图说明\n\n[0025]图1为本发明实施例提供的显示面板的结构示意图。\n\n[0026]图2为本发明实施例提供的背光驱动电路的第一结构示意图。\n\n[0027]图2(a)为本发明实施例提供的背光驱动电路的第二结构示意图。\n\n[0028]图2(b)为本发明实施例提供的背光驱动电路的第三结构示意图。\n\n[0029]图3为本发明实施例提供的背光驱动电路的第一场景示意图。\n\n[0030]图4为本发明实施例提供的背光驱动电路的第一时序示意图。\n\n[0031]图5为本发明实施例提供的背光驱动电路的第四结构示意图。\n\n[0032]图5(a)为本发明实施例提供的背光驱动电路的第五结构示意图。\n\n[0033]图5(b)为本发明实施例提供的背光驱动电路的第六结构示意图。\n\n[0034]图5(c)为本发明实施例提供的背光驱动电路的第七结构示意图。\n\n[0035]图6为本发明实施例提供的背光驱动电路的第二场景示意图。\n\n[0036]图7为本发明实施例提供的背光驱动电路的第二时序示意图。\n\n[0037]图8为本发明实施例提供的背光驱动电路的第八结构示意图。\n\n[0038]图8(a)为本发明实施例提供的背光驱动电路的第九结构示意图。\n\n[0039]图8(b)为本发明实施例提供的背光驱动电路的第十结构示意图。\n\n[0040]图8(c)为本发明实施例提供的背光驱动电路的第十一结构示意图。\n\n[0041]图8(d)为本发明实施例提供的背光驱动电路的第十二结构示意图。\n\n[0042]图9为本发明实施例提供的背光驱动电路的第三场景示意图。\n\n[0043]图10为本发明实施例提供的背光驱动电路的第三时序示意图。\n\n具体实施方式\n\n[0044]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0045]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0046]本发明提供一种背光驱动电路及其控制方法、显示面板、电子装置，具体参阅图1至图10。\n\n[0047]现有的AM-miniled的背光还存在着局部会出现暗区的现象，引发这一现象出现的原因在于AM-miniled的背光采用2T1C像素背光驱动电路，其中一个TFT设置在控制单元内，另一个TFT设置在发光单元内，位于控制单元内的TFT同时连接扫描信号和数据信号，在高温长时间工作后，该TFT的稳定性不佳，其阈值电压会产生漂移，使得在下一周期开启后，数据电压经过所述控制单元内的TFT后传递给发光单元内的TFT的电压减小，无法打开设置在所述发光单元内的TFT，导致发光单元内的发光晶体管无法导通，进而使得AM-miniled无法发光。因此，本发明提供一种背光驱动电路及其控制方法、显示面板、电子装置以解决上述问题。\n\n[0048]参阅图1，为本发明实施例提供的显示面板的结构示意图。第一方面，本发明提供的一种背光驱动电路，首先，所述背光驱动电路可以应用于Mini-LED显示面板或是Micro-LED显示面板，参阅图1可知，所述显示面板一般为一长方体，但不限于长方体，也可以是其他各种形状，且所述显示面板的八个外角均为圆角结构，以避免用户在安装、搬运或是使用时不方便甚至刮伤手指。\n\n[0049]其中，所述第一方向Z为垂直于所述背光驱动电路的显示面所在平面的方向，所述第二方向X为位于所述背光驱动电路的显示面，平行于所述背光驱动电路的显示面其中一边的方向，所述第三方向Y为同时垂直于所述第一方向Z和所述第二方向X的方向。\n\n[0050]参阅图2，为本发明实施例提供的背光驱动电路的第一结构示意图。也是图1中所述显示面板沿A-A处的剖视图。从图2中，可以看出，所述背光驱动电路包括：发光单元3，扫描控制单元1和发光控制单元2；所述发光控制单元2电性连接于所述第一电源电压线和第二电源电压线之间；所述发光控制单元2的输入端和输出端串联于所述发光单元3、所述第一电源电压线和所述第二电源电压线组成的回路中；所述扫描控制单元1包括第一晶体管和第二晶体管，所述第一晶体管和所述第二晶体管中的每个的输入端和输出端电性连接于数据线和所述发光控制单元2的控制端之间，所述第一晶体管和所述第二晶体管中的每个的控制端电性连接于对应的扫描线以使得所述第一晶体管和所述第二晶体管交替导通。\n\n[0051]其中，所述第一电源电压线接入工作电压VDD，所述第二电源电压线接入公共接地端电压VSS，即所述第二电源电压线接地；所述扫描控制单元1输入扫描控制信号和数据控制信号，所述扫描控制单元1用于在所述扫描控制信号的作用下将所述数据控制信号最终输入至所述发光单元3。\n\n[0052]可以理解的是，所述发光控制单元2包括一晶体管，所述晶体管的控制端电性连接于所述扫描控制单元1的输出端，通过所述扫描控制单元1的开启控制所述发光控制单元2的开启；所述晶体管的输入端电性连接所述发光单元3的输出端，所述发光单元3的输入端电性连接所述第一电源电压线，所述第一电源电压线接入工作电压VDD，所述晶体管的输出端电性连接所述第二电源电压线，而所述第二电源电压线接地VSS连接，即所述发光控制单元2的输入端接入工作电压VDD，所述发光控制单元2的输出端接地连接；换言之，所述发光控制单元2的输入端和输出端串联于所述发光单元3、所述第一电源电压线和所述第二电源电压线组成的回路中。所述扫描控制单元1包括第一晶体管和第二晶体管，所述扫描控制单元1的输入端电性连接其中一条数据线，所述扫描控制单元1的输出端电性连接所述发光控制单元2，即所述第一晶体管和所述第二晶体管中的每个的输入端和输出端电性连接于数据线和所述发光控制单元2的控制端之间；所述第一晶体管和所述第二晶体管中的每个的控制端电性连接于对应的扫描线，可以理解的是，在一种实施例中，所述第一晶体管的所述控制端与所述第二晶体管的所述控制端分别电性连接于不同的所述扫描级以在不同的时间段内接收不同的扫描控制信号，所述第一晶体管与所述第二晶体管为同一类型的晶体管，由于所述第一晶体管与所述第二晶体管在此为开关晶体管，仅起到开关的作用，因此，所述第一晶体管与所述第二晶体管既可以为场效应晶体管(FET，Field EffectTransistor)也可以为薄膜晶体管，所述场效应晶体管是一种通过电场效应控制电流的电子元件。它依靠电场去控制导电沟道形状，因此能控制半导体材料中某种类型载流子的沟道的导电性；在另一种实施例中，所述第一晶体管与所述第二晶体管连接同一所述扫描级，但所述第一晶体管与所述第二晶体管均为所述场效应晶体管，但所述第一晶体管与所述第二晶体管的类型不同，即所述第一晶体管与所述第二晶体管分别为N型场效应晶体管和P型场效应晶体管中不同的一种；由于所述N型场效应晶体管高电平导通，而所述P型场效应晶体管低电平导通，因此，当所述第一晶体管与所述第二晶体管分别为所述N型场效应晶体管与所述P型场效应晶体管，且所述第一晶体管与所述第二晶体管均连接同一所述扫描级时，所述第一晶体管与所述第二晶体管仍可以保持交替导通，以改善所述扫描控制单元1的稳定性。\n\n[0053]需要说明的是，所述扫描控制单元1内包括但不限于两个所述晶体管，而各所述晶体管之间并联，即每一所述晶体管的输入端均电性连接于所述扫描控制单元1的输入端，每一所述晶体管的输出端电性连接于所述扫描控制单元1的输出端，即所述发光控制单元2的输入端，不同的所述晶体管的控制端电性连接不同的扫描电极，以接入不同的扫描控制信号，进而使得位于所述扫描控制单元1内的各所述晶体管之间交替工作，以驱动所述发光控制单元2发光，避免了所述扫描控制单元1内的一个所述晶体管持续工作，长时间在高温作用下使得其阈值电压漂移，进而影响所述背光驱动电路的稳定性；因此，所述扫描控制单元1同时接入所述扫描控制信号和所述数据控制信号；由于所述扫描控制信号是逐级输入所述扫描控制单元1内的，而不同扫描级的所述扫描控制信号连接不同的所述晶体管，因此，当不同扫描级的所述扫描控制信号输入所述扫描控制单元1后，连接所述扫描级的所述扫描控制信号输入对应的所述晶体管，以使得所述晶体管导通所述扫描控制单元1，进而驱动所述发光控制单元2；即所述扫描控制单元1用于在所述扫描控制信号的作用下将所述数据控制信号输入至所述发光控制单元2。\n\n[0054]同样的，所述发光控制单元2内包括但不限于一个所述发光器件，用户可以根据实际需求设定所述发光器件的数量，与所述扫描控制单元1内的所述晶体管的连接方式不同的是，各所述发光器件之间是串联的。\n\n[0055]可以理解的是，所述发光单元3与所述发光控制单元2串联，所述发光单元3的输出端与所述发光控制单元2的输入端电性连接，且所述发光单元3的输出端的电压等于所述发光控制单元2的输入端的电压，所述发光单元3的输入端电性连接所述第一电源电压线，接入所述工作电压VDD，所述发光控制单元2的输出端电性连接所述第二电源电压线，接入接地端VSS。\n\n[0056]进一步地，所述第一晶体管的所述控制端电性连接于所述背光驱动电路对应的本级扫描线，所述第二晶体管的所述控制端电性连接于下一级所述扫描线。\n\n[0057]可以理解的是，在本发明的一种实施例中，所述第一晶体管与所述第二晶体管为同一类型的晶体管，所述第一晶体管的所述控制端电性连接于所述背光驱动电路对应的本级所述扫描线，以接收本级所述扫描线发送的本级扫描信号，所述第二晶体管的所述控制端电性连接于所述背光驱动电路的下一级所述扫描线，以接收下一级所述扫描线发送的下一级扫描信号，由于所述本级扫描信号与所述下一级扫描信号总是交替开启的，因此，所述第一晶体管与所述第二晶体管总是交替工作，进而以改善所述扫描控制单元1甚至所述背光驱动电路的稳定性。\n\n[0058]进一步地，所述发光控制单元2包括第三晶体管，所述第三晶体管的输入端和输出端为所述发光控制单元2的输入端和输出端，所述第一晶体管的控制端为所述发光控制单元2的所述控制端。\n\n[0059]可以理解的是，所述发光控制单元2包括但不限于一个所述第三晶体管，在本发明的一种实施例中，所述发光控制单元2仅包括一个所述第三晶体管，所述第三晶体管即为驱动晶体管，此时，所述第三晶体管的输入端和输出端即为所述发光控制单元2的输入端和输出端，所述第一晶体管的控制端为所述发光控制单元2的所述控制端；进一步地，由于所述第三晶体管为驱动晶体管，因此，所述第三晶体管可能需要承受所述背光驱动电路内较大的电流，且长时间工作，由于所述薄膜晶体管一般应用在微安级uA的小电流场景下，而本发明中的所述背光驱动电路一般需要导入毫安级mA的电流场景，若所述第三晶体管选用薄膜晶体管，则在长时间工作下，其寿命会变短，进而影响所述背光驱动电路的寿命，因此，所述第三晶体管优选场效应晶体管，以充分保证所述背光驱动电路的稳定性。\n\n[0060]进一步地，所述背光驱动电路还包括电容，所述电容的第一极板电性连接于所述第一晶体管和所述第二晶体管中的每个的所述输入端和所述输出端中与所述发光控制单元2的所述控制端电性连接的一个，所述电容的第二极板电性连接于所述第二电源电压线。\n\n[0061]可以理解的是，所述背光驱动电路还包括电容，所述电容的所述第一极板电性连接于所述第一晶体管和所述第二晶体管中的每个的所述输入端和所述输出端中与所述发光控制单元2的所述控制端电性连接的一个，所述电容的所述第二极板电性连接于所述第二电源电压线，所述电容用于在导通所述发光控制单元2的同时充电，当所述扫描控制单元1关闭时，所述电容放电，可以为所述发光控制单元2的所述控制端继续提供开启电压，以使得所述发光控制单元2仍然可以正常工作。\n\n[0062]进一步地，所述第一晶体管和所述第二晶体管为薄膜晶体管，所述第三晶体管为场效应晶体管。\n\n[0063]可以理解的是，由于所述第一晶体管与所述第二晶体管在此仅作为开关晶体管，只需要导通所述扫描控制单元1，将所述扫描控制信号接入至所述背光驱动电路内，因此，所述第一晶体管与所述第二晶体管选用薄膜晶体管即可，而所述第三晶体管由于起到驱动晶体管的作用，其稳定性要求更高，因此，所述第三晶体管优选为所述场效应晶体管。\n\n[0064]进一步地，所述第一电源电压线用于加载第一电源电压，所述第二电源电压线用于加载所述第二电源电压，所述第二电源电压小于所述第一电源电压。\n\n[0065]可以理解的是，所述第一电源电压线接入所述工作电压VDD，所述第二电源电压线接入所述接地端VSS，所述接地端VSS的电压为0，所述第一电源电压线与所述第二电源电压线之间设置有所述发光单元3和所述发光控制单元2；一般地，由于所述发光单元3内设置有各种发光器件，且所述发光控制单元2本身是带有电压的，因此，所述发光单元3是存在一定的电阻的，当所述第一电源电压经过所述发光单元3和所述发光控制单元2之后，所述第一电源电压会减小，进而变为所述第二电源电压，因此，所述第二电源电压小于所述第一电源电压；特殊的，当所述发光单元3内未设置所述发光器件，且所述发光控制单元2也无电阻，即所述发光单元3和所述发光控制单元2相当于一根导线时，所述发光单元3可以视作无电阻，即此时所述第二电源电压等于所述第一电源电压，由于每根导线自身也会存在一定的电阻，即线电阻，因此所述发光单元3和所述发光控制单元2内一定存在电阻，所述第二电源电压始终是小于所述第一电源电压的。进一步地，所述第一电源电压等于所述发光单元3内的电流乘以所述发光单元3内的电阻加上所述发光控制单元2内的电流乘以所述发光控制单元2内的电阻加上所述第二电源电压。\n\n[0066]所述发光单元3与所述发光控制单元2内的电阻均大于0，而所述发光单元3与所述发光控制单元2位于同一根导线上，因此，流入所述发光单元3内的电流与流入所述发光控制单元2内的电流相等，因此，所述第一电源电压大于所述第二电源电压，换言之，所述第二电源电压小于所述第一电源电压。\n\n[0067]进一步地，所述发光单元3为迷你发光二极管。\n\n[0068]可以理解的是，所述发光单元3内包含至少一个所述发光器件，在本发明实施例中，所述发光单元3为迷你发光二极管。\n\n[0069]在一种实施例中，所述扫描控制单元1包括两所述晶体管，第一晶体管T1和第二晶体管T2，所述第一晶体管T1的输入端与所述第二晶体管T2输入端均电性连接所述数据控制信号，所述第一晶体管T1的控制端电性连接本级扫描控制信号GN，所述第二晶体管T2的控制端电性连接下一级扫描控制信号G(N+1)；即在第一时间段内，所述第一晶体管T1导通，所述第二晶体管T2关闭，所述第一晶体管T1的控制端通过所述本级扫描控制信号GN连通所述扫描控制单元1，使得所述扫描控制单元1将信号传递至所述发光控制单元2，详见图2(a)；在第二时间段内，所述第二晶体管T2导通，所述第一晶体管T1关闭，所述第二晶体管T2的控制端通过所述下一级扫描控制信号G(N+1)连通所述扫描控制单元1，使得所述扫描控制单元1将信号传递至所述发光控制单元2，详见图2(b)；即此时所述扫描控制单元1内的两所述晶体管在不同的扫描级的作用下，在不同的时间段内接入不同的所述扫描控制信号，进而使得位于所述扫描控制单元1内的两所述晶体管交替工作，具体地，详见图3为本发明的第一场景示意图；图4，为本发明实施例提供的背光驱动电路的第一时序示意图，对应于图3。\n\n[0070]在一种实施例中，所述扫描控制单元1内包括三所述晶体管，所述第一晶体管T1、所述第二晶体管T2和所述第三晶体管T3，参阅图5；所述第一晶体管T1的输入端、所述第二晶体管T2的输入端和所述第三晶体管T3的输入端均电性连接所述数据控制信号，所述第一晶体管T1的控制端电性连接上一级扫描控制信号G(N-1)，所述第二晶体管T2的控制端电性连接本级扫描控制信号GN；所述第三晶体管T3的控制端电性连接下一级扫描控制信号G(N+1)；换言之，在第一时间段内，所述第一晶体管T1导通，所述第二晶体管T2和所述第三晶体管T3关闭，所述第一晶体管T1的控制端通过所述上一级扫描控制信号G(N-1)连通所述扫描控制单元1，以使得所述发光控制单元2发光，详见图5(a)；在第二时间段内，所述第二晶体管T2导通，所述第一晶体管T1和所述第三晶体管T3关闭，所述第二晶体管T2的控制端通过所述本级扫描控制信号GN连通所述扫描控制信号，以使得所述发光控制单元2发光，详见图5(b)；在第三时间段内，所述第三晶体管T3导通，所述第二晶体管T2和所述第一晶体管T1关闭，所述第三晶体管T3的控制端通过所述下一级扫描控制信号G(N+1)连通所述扫描控制信号，以使得所述发光控制单元2发光，详见图5(c)；具体地，详见图6为本发明的第二场景示意图；图7，为本发明实施例提供的背光驱动电路的第二时序示意图，对应于图6。\n\n[0071]在一种实施例中，所述扫描控制单元1包括四所述晶体管，所述第一晶体管T1、所述第二晶体管T2、所述第三晶体管T3以及所述第四晶体管T4，参阅图8；所述第一晶体管T1的输入端、第二晶体管T2的输入端、第三晶体管T3的输入端以及第四晶体管T4的输入端均电性连接所述数据控制信号，所述第一晶体管T1的控制端电性连接上一级扫描控制信号G(N-1)，所述第二晶体管T2的控制端电性连接本级扫描控制信号GN；所述第三晶体管T3的控制端电性连接下一级扫描控制信号G(N+1)；所述第四晶体管T4的控制端电性连接下下一级扫描控制信号G(N+2)；即在第一时间段内，所述第一晶体管T1的控制端通过所述上一级扫描控制信号G(N-1)连通所述扫描控制单元1，以使得所述发光控制单元2发光，参阅图8(a)；在第二时间段内，所述第二晶体管T2的控制端通过所述本级扫描控制信号GN连通所述扫描控制单元1，以使得所述发光控制单元2发光，参阅图8(b)；在第三时间段内，所述第三晶体管T3的控制端通过所述下一级扫描控制信号G(N+1)连通所述扫描控制信号，以使得所述发光控制单元2发光，参阅图8(c)；在第四时间段内，所述第四晶体管T4的控制端通过所述下下一级扫描控制信号G(N+2)连通所述扫描控制信号，以使得所述发光控制单元2发光，参阅图8(d)；具体地，详见图9为本发明的第三场景示意图；图10，为本发明实施例提供的背光驱动电路的第三时序示意图，对应于图9。\n\n[0072]第二方面，本发明实施例提供一种背光驱动电路的控制方法，用于控制如上述任一项所述的背光驱动电路，包括：向电性连接于所述第一晶体管和所述第二晶体管的两所述控制端的两所述扫描线提供不同的扫描信号，使得所述第一晶体管和所述第二晶体管交替导通。\n\n[0073]具体地，所述背光驱动电路接收所述数据控制信号和所述扫描控制信号；根据不同的所述扫描级或是不同时间段内的所述扫描级发出的所述扫描控制信号控制所述扫描控制单元1内相应的所述场效应晶体管导通，以使得所述数据控制信号输入至所述扫描控制单元1与所述发光控制单元2内，进而使得所述发光控制单元2工作。\n\n[0074]进一步地，由于所述扫描控制单元1内的所述晶体管的控制端电性连接其中一扫描线，所述晶体管的输入端电性连接其中一所述数据线，当连接所述晶体管的所述扫描线输入高/低电平时，所述晶体管导通，所述数据控制信号从所述晶体管的输入端传递至所述发光控制单元2进而传输至所述发光单元3，以使得所述发光单元3发光。\n\n[0075]第三方面，本发明的实施例提供一种显示面板，包括：第一电源电压线和第二电源电压线；多条数据线和多条扫描线，相互交叉设置；多个上述任一项所述的背光驱动电路。\n\n[0076]进一步地，所述显示面板内包括第一载体和第二载体，所述第一载体包括存储器，所述第二载体包括处理器，所述第一载体可以用于存储一个或多个控制方法，所述控制方法包括但不限于上述所述的背光驱动电路的控制方法，所述第二载体用于执行存储与所述第一载体内的各所述控制方法，例如，所述第二载体用于执行位于所述第一载体内的背光驱动电路的控制方法：\n\n[0077]向电性连接于所述第一晶体管和所述第二晶体管的两所述控制端的两所述扫描线提供不同的扫描信号，使得所述第一晶体管和所述第二晶体管交替导通。\n\n[0078]第四方面，本发明的实施例还提供一种电子装置，所述电子装置包括上述所述的显示面板。\n\n[0079]可以理解的是，所述显示面板包含上述所述的背光驱动电路，所述第一载体以及所述第二载体，可以通过所述第二载体执行存储在所述第一载体内的控制方法，进而以控制所述背光驱动电路的目的。\n\n[0080]以上对本发明实施例所提供的一种背光驱动电路及其控制方法、显示面板、电子装置进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。', '技术领域\n\n[0001]本发明涉及显示领域，特别是涉及一种背光驱动电路及其控制方法、显示面板、电子装置。\n\n背景技术\n\n[0002]AM-miniled(Active miniature Light Emitting Diode，有源式迷你发光二极管)技术以薄膜晶体管(TFT，Thin Film Transistor)作为背光驱动电路，实现主动矩阵式(Active-matrix，AM-miniLED)驱动，将miniLED的潜力发挥到极致。而AM-miniled在使用中也存在着一些问题。\n\n[0003]例如，AM-miniled的背光还存在着局部会出现暗区的现象，引发这一现象出现的原因在于AM-miniled的背光采用2T1C像素背光驱动电路，其中一个TFT设置在控制单元内，另一个TFT设置在发光单元内，位于控制单元内的TFT同时连接扫描信号和数据信号，在高温长时间工作后，该TFT的稳定性不佳，其阈值电压会产生漂移，使得在下一周期开启后，数据电压经过所述控制单元内的TFT后传递给发光单元内的TFT的电压减小，无法打开设置在所述发光单元内的TFT，导致发光单元内的发光晶体管无法导通，进而使得AM-miniled无法发光。\n\n[0004]因此，现有的AM-miniled技术中，还存在着背光驱动电路中控制单元内的TFT阈值电压漂移，导致AM-miniled无法发光的问题，急需改进。\n\n发明内容\n\n[0005]本发明涉及一种背光驱动电路及其控制方法、显示面板、电子装置，用于解决现有技术中存在着背光驱动电路中控制单元内的TFT阈值电压漂移，导致AM-miniled无法发光的问题。\n\n[0006]为解决上述问题，本发明提供的技术方案如下：\n\n[0007]第一方面，本发明提供的一种背光驱动电路，包括：发光单元，扫描控制单元和发光控制单元；\n\n[0008]所述发光单元电性连接于第一电源电压线和第二电源电压线之间；\n\n[0009]所述发光控制单元的输入端和输出端串联于所述发光单元、所述第一电源电压线和所述第二电源电压线组成的回路中；\n\n[0010]所述扫描控制单元包括第一晶体管和第二晶体管，所述第一晶体管和所述第二晶体管中的每个的输入端和输出端电性连接于数据线和所述发光控制单元的控制端之间，所述第一晶体管和所述第二晶体管中的每个的控制端电性连接于对应的扫描线以使得所述第一晶体管和所述第二晶体管交替导通。\n\n[0011]在一些实施例中，所述第一晶体管的所述控制端电性连接于所述背光驱动电路对应的本级扫描线，所述第二晶体管的所述控制端电性连接于下一级所述扫描线。\n\n[0012]在一些实施例中，所述发光控制单元包括第三晶体管，所述第三晶体管的输入端和输出端为所述发光控制单元的所述输入端和所述输出端，所述第一晶体管的控制端为所述发光控制单元的所述控制端。\n\n[0013]在一些实施例中，还包括电容，所述电容的第一极板电性连接于所述第一晶体管和所述第二晶体管中的每个的所述输入端和所述输出端中与所述发光控制单元的所述控制端电性连接的一个，所述电容的第二极板电性连接于所述第二电源电压线。\n\n[0014]在一些实施例中，所述第一晶体管和所述第二晶体管为薄膜晶体管，所述第三晶体管为场效应晶体管。\n\n[0015]在一些实施例中，所述第一电源电压线用于加载第一电源电压，所述第二电源电压线用于加载所述第二电源电压，所述第二电源电压小于所述第一电源电压。\n\n[0016]在一些实施例中，所述发光单元为迷你发光二极管。\n\n[0017]第二方面，本发明提供一种背光驱动电路的控制方法，用于控制如上述任一项所述的背光驱动电路，包括：向电性连接于所述第一晶体管和所述第二晶体管的两所述控制端的两所述扫描线提供不同的扫描信号，使得所述第一晶体管和所述第二晶体管交替导通。\n\n[0018]第三方面，本发明提供一种显示面板，包括：\n\n[0019]第一电源电压线和第二电源电压线；\n\n[0020]多条数据线和多条扫描线，相互交叉设置；\n\n[0021]多个如上述任一项所述的背光驱动电路。\n\n[0022]第四方面，本发明还提供一种电子装置，包括上述所述的显示面板。\n\n[0023]与现有技术相比，本发明提供的一种背光驱动电路及其控制方法、显示面板、电子装置的有益效果为：\n\n[0024]本发明提供的背光驱动电路，包括：发光单元、扫描控制单元和发光控制单元；所述发光单元电性连接于第一电源电压线和第二电源电压线之间；所述发光控制单元的输入端和输出端串联于所述发光单元、所述第一电源电压线和所述第二电源电压线组成的回路中；所述扫描控制单元包括第一晶体管和第二晶体管，所述第一晶体管和所述第二晶体管中的每个的输入端和输出端电性连接于数据线和所述发光控制单元的控制端之间，所述第一晶体管和所述第二晶体管中的每个的控制端电性连接于对应的扫描线以使得所述第一晶体管和所述第二晶体管交替导通；增加了扫描控制单元内的晶体管的数量，以使得各晶体管交替驱动发光控制单元发光，提高背光驱动电路的稳定性并延长其寿命。\n\n附图说明\n\n[0025]图1为本发明实施例提供的显示面板的结构示意图。\n\n[0026]图2为本发明实施例提供的背光驱动电路的第一结构示意图。\n\n[0027]图2(a)为本发明实施例提供的背光驱动电路的第二结构示意图。\n\n[0028]图2(b)为本发明实施例提供的背光驱动电路的第三结构示意图。\n\n[0029]图3为本发明实施例提供的背光驱动电路的第一场景示意图。\n\n[0030]图4为本发明实施例提供的背光驱动电路的第一时序示意图。\n\n[0031]图5为本发明实施例提供的背光驱动电路的第四结构示意图。\n\n[0032]图5(a)为本发明实施例提供的背光驱动电路的第五结构示意图。\n\n[0033]图5(b)为本发明实施例提供的背光驱动电路的第六结构示意图。\n\n[0034]图5(c)为本发明实施例提供的背光驱动电路的第七结构示意图。\n\n[0035]图6为本发明实施例提供的背光驱动电路的第二场景示意图。\n\n[0036]图7为本发明实施例提供的背光驱动电路的第二时序示意图。\n\n[0037]图8为本发明实施例提供的背光驱动电路的第八结构示意图。\n\n[0038]图8(a)为本发明实施例提供的背光驱动电路的第九结构示意图。\n\n[0039]图8(b)为本发明实施例提供的背光驱动电路的第十结构示意图。\n\n[0040]图8(c)为本发明实施例提供的背光驱动电路的第十一结构示意图。\n\n[0041]图8(d)为本发明实施例提供的背光驱动电路的第十二结构示意图。\n\n[0042]图9为本发明实施例提供的背光驱动电路的第三场景示意图。\n\n[0043]图10为本发明实施例提供的背光驱动电路的第三时序示意图。\n\n具体实施方式\n\n[0044]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0045]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0046]本发明提供一种背光驱动电路及其控制方法、显示面板、电子装置，具体参阅图1至图10。\n\n[0047]现有的AM-miniled的背光还存在着局部会出现暗区的现象，引发这一现象出现的原因在于AM-miniled的背光采用2T1C像素背光驱动电路，其中一个TFT设置在控制单元内，另一个TFT设置在发光单元内，位于控制单元内的TFT同时连接扫描信号和数据信号，在高温长时间工作后，该TFT的稳定性不佳，其阈值电压会产生漂移，使得在下一周期开启后，数据电压经过所述控制单元内的TFT后传递给发光单元内的TFT的电压减小，无法打开设置在所述发光单元内的TFT，导致发光单元内的发光晶体管无法导通，进而使得AM-miniled无法发光。因此，本发明提供一种背光驱动电路及其控制方法、显示面板、电子装置以解决上述问题。\n\n[0048]参阅图1，为本发明实施例提供的显示面板的结构示意图。第一方面，本发明提供的一种背光驱动电路，首先，所述背光驱动电路可以应用于Mini-LED显示面板或是Micro-LED显示面板，参阅图1可知，所述显示面板一般为一长方体，但不限于长方体，也可以是其他各种形状，且所述显示面板的八个外角均为圆角结构，以避免用户在安装、搬运或是使用时不方便甚至刮伤手指。\n\n[0049]其中，所述第一方向Z为垂直于所述背光驱动电路的显示面所在平面的方向，所述第二方向X为位于所述背光驱动电路的显示面，平行于所述背光驱动电路的显示面其中一边的方向，所述第三方向Y为同时垂直于所述第一方向Z和所述第二方向X的方向。\n\n[0050]参阅图2，为本发明实施例提供的背光驱动电路的第一结构示意图。也是图1中所述显示面板沿A-A处的剖视图。从图2中，可以看出，所述背光驱动电路包括：发光单元3，扫描控制单元1和发光控制单元2；所述发光控制单元2电性连接于所述第一电源电压线和第二电源电压线之间；所述发光控制单元2的输入端和输出端串联于所述发光单元3、所述第一电源电压线和所述第二电源电压线组成的回路中；所述扫描控制单元1包括第一晶体管和第二晶体管，所述第一晶体管和所述第二晶体管中的每个的输入端和输出端电性连接于数据线和所述发光控制单元2的控制端之间，所述第一晶体管和所述第二晶体管中的每个的控制端电性连接于对应的扫描线以使得所述第一晶体管和所述第二晶体管交替导通。\n\n[0051]其中，所述第一电源电压线接入工作电压VDD，所述第二电源电压线接入公共接地端电压VSS，即所述第二电源电压线接地；所述扫描控制单元1输入扫描控制信号和数据控制信号，所述扫描控制单元1用于在所述扫描控制信号的作用下将所述数据控制信号最终输入至所述发光单元3。\n\n[0052]可以理解的是，所述发光控制单元2包括一晶体管，所述晶体管的控制端电性连接于所述扫描控制单元1的输出端，通过所述扫描控制单元1的开启控制所述发光控制单元2的开启；所述晶体管的输入端电性连接所述发光单元3的输出端，所述发光单元3的输入端电性连接所述第一电源电压线，所述第一电源电压线接入工作电压VDD，所述晶体管的输出端电性连接所述第二电源电压线，而所述第二电源电压线接地VSS连接，即所述发光控制单元2的输入端接入工作电压VDD，所述发光控制单元2的输出端接地连接；换言之，所述发光控制单元2的输入端和输出端串联于所述发光单元3、所述第一电源电压线和所述第二电源电压线组成的回路中。所述扫描控制单元1包括第一晶体管和第二晶体管，所述扫描控制单元1的输入端电性连接其中一条数据线，所述扫描控制单元1的输出端电性连接所述发光控制单元2，即所述第一晶体管和所述第二晶体管中的每个的输入端和输出端电性连接于数据线和所述发光控制单元2的控制端之间；所述第一晶体管和所述第二晶体管中的每个的控制端电性连接于对应的扫描线，可以理解的是，在一种实施例中，所述第一晶体管的所述控制端与所述第二晶体管的所述控制端分别电性连接于不同的所述扫描级以在不同的时间段内接收不同的扫描控制信号，所述第一晶体管与所述第二晶体管为同一类型的晶体管，由于所述第一晶体管与所述第二晶体管在此为开关晶体管，仅起到开关的作用，因此，所述第一晶体管与所述第二晶体管既可以为场效应晶体管(FET，Field EffectTransistor)也可以为薄膜晶体管，所述场效应晶体管是一种通过电场效应控制电流的电子元件。它依靠电场去控制导电沟道形状，因此能控制半导体材料中某种类型载流子的沟道的导电性；在另一种实施例中，所述第一晶体管与所述第二晶体管连接同一所述扫描级，但所述第一晶体管与所述第二晶体管均为所述场效应晶体管，但所述第一晶体管与所述第二晶体管的类型不同，即所述第一晶体管与所述第二晶体管分别为N型场效应晶体管和P型场效应晶体管中不同的一种；由于所述N型场效应晶体管高电平导通，而所述P型场效应晶体管低电平导通，因此，当所述第一晶体管与所述第二晶体管分别为所述N型场效应晶体管与所述P型场效应晶体管，且所述第一晶体管与所述第二晶体管均连接同一所述扫描级时，所述第一晶体管与所述第二晶体管仍可以保持交替导通，以改善所述扫描控制单元1的稳定性。\n\n[0053]需要说明的是，所述扫描控制单元1内包括但不限于两个所述晶体管，而各所述晶体管之间并联，即每一所述晶体管的输入端均电性连接于所述扫描控制单元1的输入端，每一所述晶体管的输出端电性连接于所述扫描控制单元1的输出端，即所述发光控制单元2的输入端，不同的所述晶体管的控制端电性连接不同的扫描电极，以接入不同的扫描控制信号，进而使得位于所述扫描控制单元1内的各所述晶体管之间交替工作，以驱动所述发光控制单元2发光，避免了所述扫描控制单元1内的一个所述晶体管持续工作，长时间在高温作用下使得其阈值电压漂移，进而影响所述背光驱动电路的稳定性；因此，所述扫描控制单元1同时接入所述扫描控制信号和所述数据控制信号；由于所述扫描控制信号是逐级输入所述扫描控制单元1内的，而不同扫描级的所述扫描控制信号连接不同的所述晶体管，因此，当不同扫描级的所述扫描控制信号输入所述扫描控制单元1后，连接所述扫描级的所述扫描控制信号输入对应的所述晶体管，以使得所述晶体管导通所述扫描控制单元1，进而驱动所述发光控制单元2；即所述扫描控制单元1用于在所述扫描控制信号的作用下将所述数据控制信号输入至所述发光控制单元2。\n\n[0054]同样的，所述发光控制单元2内包括但不限于一个所述发光器件，用户可以根据实际需求设定所述发光器件的数量，与所述扫描控制单元1内的所述晶体管的连接方式不同的是，各所述发光器件之间是串联的。\n\n[0055]可以理解的是，所述发光单元3与所述发光控制单元2串联，所述发光单元3的输出端与所述发光控制单元2的输入端电性连接，且所述发光单元3的输出端的电压等于所述发光控制单元2的输入端的电压，所述发光单元3的输入端电性连接所述第一电源电压线，接入所述工作电压VDD，所述发光控制单元2的输出端电性连接所述第二电源电压线，接入接地端VSS。\n\n[0056]进一步地，所述第一晶体管的所述控制端电性连接于所述背光驱动电路对应的本级扫描线，所述第二晶体管的所述控制端电性连接于下一级所述扫描线。\n\n[0057]可以理解的是，在本发明的一种实施例中，所述第一晶体管与所述第二晶体管为同一类型的晶体管，所述第一晶体管的所述控制端电性连接于所述背光驱动电路对应的本级所述扫描线，以接收本级所述扫描线发送的本级扫描信号，所述第二晶体管的所述控制端电性连接于所述背光驱动电路的下一级所述扫描线，以接收下一级所述扫描线发送的下一级扫描信号，由于所述本级扫描信号与所述下一级扫描信号总是交替开启的，因此，所述第一晶体管与所述第二晶体管总是交替工作，进而以改善所述扫描控制单元1甚至所述背光驱动电路的稳定性。\n\n[0058]进一步地，所述发光控制单元2包括第三晶体管，所述第三晶体管的输入端和输出端为所述发光控制单元2的输入端和输出端，所述第一晶体管的控制端为所述发光控制单元2的所述控制端。\n\n[0059]可以理解的是，所述发光控制单元2包括但不限于一个所述第三晶体管，在本发明的一种实施例中，所述发光控制单元2仅包括一个所述第三晶体管，所述第三晶体管即为驱动晶体管，此时，所述第三晶体管的输入端和输出端即为所述发光控制单元2的输入端和输出端，所述第一晶体管的控制端为所述发光控制单元2的所述控制端；进一步地，由于所述第三晶体管为驱动晶体管，因此，所述第三晶体管可能需要承受所述背光驱动电路内较大的电流，且长时间工作，由于所述薄膜晶体管一般应用在微安级uA的小电流场景下，而本发明中的所述背光驱动电路一般需要导入毫安级mA的电流场景，若所述第三晶体管选用薄膜晶体管，则在长时间工作下，其寿命会变短，进而影响所述背光驱动电路的寿命，因此，所述第三晶体管优选场效应晶体管，以充分保证所述背光驱动电路的稳定性。\n\n[0060]进一步地，所述背光驱动电路还包括电容，所述电容的第一极板电性连接于所述第一晶体管和所述第二晶体管中的每个的所述输入端和所述输出端中与所述发光控制单元2的所述控制端电性连接的一个，所述电容的第二极板电性连接于所述第二电源电压线。\n\n[0061]可以理解的是，所述背光驱动电路还包括电容，所述电容的所述第一极板电性连接于所述第一晶体管和所述第二晶体管中的每个的所述输入端和所述输出端中与所述发光控制单元2的所述控制端电性连接的一个，所述电容的所述第二极板电性连接于所述第二电源电压线，所述电容用于在导通所述发光控制单元2的同时充电，当所述扫描控制单元1关闭时，所述电容放电，可以为所述发光控制单元2的所述控制端继续提供开启电压，以使得所述发光控制单元2仍然可以正常工作。\n\n[0062]进一步地，所述第一晶体管和所述第二晶体管为薄膜晶体管，所述第三晶体管为场效应晶体管。\n\n[0063]可以理解的是，由于所述第一晶体管与所述第二晶体管在此仅作为开关晶体管，只需要导通所述扫描控制单元1，将所述扫描控制信号接入至所述背光驱动电路内，因此，所述第一晶体管与所述第二晶体管选用薄膜晶体管即可，而所述第三晶体管由于起到驱动晶体管的作用，其稳定性要求更高，因此，所述第三晶体管优选为所述场效应晶体管。\n\n[0064]进一步地，所述第一电源电压线用于加载第一电源电压，所述第二电源电压线用于加载所述第二电源电压，所述第二电源电压小于所述第一电源电压。\n\n[0065]可以理解的是，所述第一电源电压线接入所述工作电压VDD，所述第二电源电压线接入所述接地端VSS，所述接地端VSS的电压为0，所述第一电源电压线与所述第二电源电压线之间设置有所述发光单元3和所述发光控制单元2；一般地，由于所述发光单元3内设置有各种发光器件，且所述发光控制单元2本身是带有电压的，因此，所述发光单元3是存在一定的电阻的，当所述第一电源电压经过所述发光单元3和所述发光控制单元2之后，所述第一电源电压会减小，进而变为所述第二电源电压，因此，所述第二电源电压小于所述第一电源电压；特殊的，当所述发光单元3内未设置所述发光器件，且所述发光控制单元2也无电阻，即所述发光单元3和所述发光控制单元2相当于一根导线时，所述发光单元3可以视作无电阻，即此时所述第二电源电压等于所述第一电源电压，由于每根导线自身也会存在一定的电阻，即线电阻，因此所述发光单元3和所述发光控制单元2内一定存在电阻，所述第二电源电压始终是小于所述第一电源电压的。进一步地，所述第一电源电压等于所述发光单元3内的电流乘以所述发光单元3内的电阻加上所述发光控制单元2内的电流乘以所述发光控制单元2内的电阻加上所述第二电源电压。\n\n[0066]所述发光单元3与所述发光控制单元2内的电阻均大于0，而所述发光单元3与所述发光控制单元2位于同一根导线上，因此，流入所述发光单元3内的电流与流入所述发光控制单元2内的电流相等，因此，所述第一电源电压大于所述第二电源电压，换言之，所述第二电源电压小于所述第一电源电压。\n\n[0067]进一步地，所述发光单元3为迷你发光二极管。\n\n[0068]可以理解的是，所述发光单元3内包含至少一个所述发光器件，在本发明实施例中，所述发光单元3为迷你发光二极管。\n\n[0069]在一种实施例中，所述扫描控制单元1包括两所述晶体管，第一晶体管T1和第二晶体管T2，所述第一晶体管T1的输入端与所述第二晶体管T2输入端均电性连接所述数据控制信号，所述第一晶体管T1的控制端电性连接本级扫描控制信号GN，所述第二晶体管T2的控制端电性连接下一级扫描控制信号G(N+1)；即在第一时间段内，所述第一晶体管T1导通，所述第二晶体管T2关闭，所述第一晶体管T1的控制端通过所述本级扫描控制信号GN连通所述扫描控制单元1，使得所述扫描控制单元1将信号传递至所述发光控制单元2，详见图2(a)；在第二时间段内，所述第二晶体管T2导通，所述第一晶体管T1关闭，所述第二晶体管T2的控制端通过所述下一级扫描控制信号G(N+1)连通所述扫描控制单元1，使得所述扫描控制单元1将信号传递至所述发光控制单元2，详见图2(b)；即此时所述扫描控制单元1内的两所述晶体管在不同的扫描级的作用下，在不同的时间段内接入不同的所述扫描控制信号，进而使得位于所述扫描控制单元1内的两所述晶体管交替工作，具体地，详见图3为本发明的第一场景示意图；图4，为本发明实施例提供的背光驱动电路的第一时序示意图，对应于图3。\n\n[0070]在一种实施例中，所述扫描控制单元1内包括三所述晶体管，所述第一晶体管T1、所述第二晶体管T2和所述第三晶体管T3，参阅图5；所述第一晶体管T1的输入端、所述第二晶体管T2的输入端和所述第三晶体管T3的输入端均电性连接所述数据控制信号，所述第一晶体管T1的控制端电性连接上一级扫描控制信号G(N-1)，所述第二晶体管T2的控制端电性连接本级扫描控制信号GN；所述第三晶体管T3的控制端电性连接下一级扫描控制信号G(N+1)；换言之，在第一时间段内，所述第一晶体管T1导通，所述第二晶体管T2和所述第三晶体管T3关闭，所述第一晶体管T1的控制端通过所述上一级扫描控制信号G(N-1)连通所述扫描控制单元1，以使得所述发光控制单元2发光，详见图5(a)；在第二时间段内，所述第二晶体管T2导通，所述第一晶体管T1和所述第三晶体管T3关闭，所述第二晶体管T2的控制端通过所述本级扫描控制信号GN连通所述扫描控制信号，以使得所述发光控制单元2发光，详见图5(b)；在第三时间段内，所述第三晶体管T3导通，所述第二晶体管T2和所述第一晶体管T1关闭，所述第三晶体管T3的控制端通过所述下一级扫描控制信号G(N+1)连通所述扫描控制信号，以使得所述发光控制单元2发光，详见图5(c)；具体地，详见图6为本发明的第二场景示意图；图7，为本发明实施例提供的背光驱动电路的第二时序示意图，对应于图6。\n\n[0071]在一种实施例中，所述扫描控制单元1包括四所述晶体管，所述第一晶体管T1、所述第二晶体管T2、所述第三晶体管T3以及所述第四晶体管T4，参阅图8；所述第一晶体管T1的输入端、第二晶体管T2的输入端、第三晶体管T3的输入端以及第四晶体管T4的输入端均电性连接所述数据控制信号，所述第一晶体管T1的控制端电性连接上一级扫描控制信号G(N-1)，所述第二晶体管T2的控制端电性连接本级扫描控制信号GN；所述第三晶体管T3的控制端电性连接下一级扫描控制信号G(N+1)；所述第四晶体管T4的控制端电性连接下下一级扫描控制信号G(N+2)；即在第一时间段内，所述第一晶体管T1的控制端通过所述上一级扫描控制信号G(N-1)连通所述扫描控制单元1，以使得所述发光控制单元2发光，参阅图8(a)；在第二时间段内，所述第二晶体管T2的控制端通过所述本级扫描控制信号GN连通所述扫描控制单元1，以使得所述发光控制单元2发光，参阅图8(b)；在第三时间段内，所述第三晶体管T3的控制端通过所述下一级扫描控制信号G(N+1)连通所述扫描控制信号，以使得所述发光控制单元2发光，参阅图8(c)；在第四时间段内，所述第四晶体管T4的控制端通过所述下下一级扫描控制信号G(N+2)连通所述扫描控制信号，以使得所述发光控制单元2发光，参阅图8(d)；具体地，详见图9为本发明的第三场景示意图；图10，为本发明实施例提供的背光驱动电路的第三时序示意图，对应于图9。\n\n[0072]第二方面，本发明实施例提供一种背光驱动电路的控制方法，用于控制如上述任一项所述的背光驱动电路，包括：向电性连接于所述第一晶体管和所述第二晶体管的两所述控制端的两所述扫描线提供不同的扫描信号，使得所述第一晶体管和所述第二晶体管交替导通。\n\n[0073]具体地，所述背光驱动电路接收所述数据控制信号和所述扫描控制信号；根据不同的所述扫描级或是不同时间段内的所述扫描级发出的所述扫描控制信号控制所述扫描控制单元1内相应的所述场效应晶体管导通，以使得所述数据控制信号输入至所述扫描控制单元1与所述发光控制单元2内，进而使得所述发光控制单元2工作。\n\n[0074]进一步地，由于所述扫描控制单元1内的所述晶体管的控制端电性连接其中一扫描线，所述晶体管的输入端电性连接其中一所述数据线，当连接所述晶体管的所述扫描线输入高/低电平时，所述晶体管导通，所述数据控制信号从所述晶体管的输入端传递至所述发光控制单元2进而传输至所述发光单元3，以使得所述发光单元3发光。\n\n[0075]第三方面，本发明的实施例提供一种显示面板，包括：第一电源电压线和第二电源电压线；多条数据线和多条扫描线，相互交叉设置；多个上述任一项所述的背光驱动电路。\n\n[0076]进一步地，所述显示面板内包括第一载体和第二载体，所述第一载体包括存储器，所述第二载体包括处理器，所述第一载体可以用于存储一个或多个控制方法，所述控制方法包括但不限于上述所述的背光驱动电路的控制方法，所述第二载体用于执行存储与所述第一载体内的各所述控制方法，例如，所述第二载体用于执行位于所述第一载体内的背光驱动电路的控制方法：\n\n[0077]向电性连接于所述第一晶体管和所述第二晶体管的两所述控制端的两所述扫描线提供不同的扫描信号，使得所述第一晶体管和所述第二晶体管交替导通。\n\n[0078]第四方面，本发明的实施例还提供一种电子装置，所述电子装置包括上述所述的显示面板。\n\n[0079]可以理解的是，所述显示面板包含上述所述的背光驱动电路，所述第一载体以及所述第二载体，可以通过所述第二载体执行存储在所述第一载体内的控制方法，进而以控制所述背光驱动电路的目的。\n\n[0080]以上对本发明实施例所提供的一种背光驱动电路及其控制方法、显示面板、电子装置进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10937, 23991, '技术领域\n\n[0001]本申请涉及Micro LED显示技术领域，具体涉及一种Micro LED显示面板和一种Micro LED显示面板制备方法。\n\n背景技术\n\n[0002]目前micro-LED的巨量转移成本高且良率低，红绿蓝三种LED芯片分别转移的话，成本更高，所以现有技术通常采用蓝色Micro-LED加量子点薄膜的结构。\n\n[0003]目前的量子点薄膜都是一层较厚的附加薄膜，所以Micro LED显示面板的厚度相应的增加了很多。对于柔性显示不利，且成本贵。\n\n[0004]因此，现有Micro LED显示面板存在设置量子点薄膜增大了厚度的技术问题。\n\n发明内容\n\n[0005]本申请实施例提供一种Micro LED显示面板和一种Micro LED显示面板制备方法，可以缓解现有Micro LED显示面板存在设置量子点薄膜增大了厚度的技术问题。\n\n[0006]本申请实施例提供一种Micro LED显示面板，包括：\n\n[0007]衬底；\n\n[0008]位于所述衬底上方且背向所述衬底层叠设置的缓冲层、有源层、第一栅绝缘层；\n\n[0009]设置在所述第一栅绝缘层上的栅极、阳极、阴极；\n\n[0010]设置在第一栅绝缘层上方的第二栅绝缘层、层间绝缘层、平坦层，所述第二栅绝缘层、所述层间绝缘层、所述平坦层贯穿设置有第一过孔；\n\n[0011]其中，所述阳极和所述阴极下沉到与栅极同层且相互绝缘设置，所述第一过孔的底部延伸至所述阳极和所述阴极所在层，所述阳极和所述阴极部分外露在所述第一过孔内。\n\n[0012]可选的，在本申请的一些实施例中，在所述第一过孔内，所述阳极、所述阴极的部分表面以及所述第一过孔的内侧壁设置有反射层。\n\n[0013]可选的，在本申请的一些实施例中，所述第一过孔内还设置有LED芯片和量子点色转换层，所述LED芯片分别与所述阳极、所述阴极连接，所述量子点色转换层设置在所述LED芯片背向所述衬底的一侧，且所述量子点色转换层的厚度小于或等于所述第一过孔的高度。\n\n[0014]本申请实施例提供一种Micro LED显示面板制备方法，包括：\n\n[0015]提供一阵列基板，所述阵列基板包括衬底、设置在所述衬底上的缓冲层、设置在所述缓冲层上的有源层、设置在所述有源层上的第一栅绝缘层；\n\n[0016]在所述第一栅绝缘层上形成一金属膜层，将所述金属膜层制备得到同层且绝缘设置的栅极、阳极、阴极；\n\n[0017]在所述第一栅绝缘层上制备得到第二栅绝缘层、层间绝缘层；\n\n[0018]在所述第二栅绝缘层、所述层间绝缘层内形成第一过孔、第二过孔、第三过孔，所述第一过孔使所述阳极和所述阴极部分外露；\n\n[0019]在所述第二栅绝缘层上制备得到源极、漏极，所述源极、所述漏极通过所述第三过孔与所述有源层连接，所述漏极通过所述第二过孔与所述阳极连接；\n\n[0020]提供LED芯片，将所述LED芯片转移到所述第一过孔内；\n\n[0021]在第一过孔内，在所述LED芯片上方通过喷墨打印的方式制备得到量子点色转换层。\n\n[0022]可选的，在本申请的一些实施例中，形成所述第一过孔使所述阳极和所述阴极部分外露的步骤还包括:\n\n[0023]在所述阳极和所述阴极外露区域的部分表面形成反射层。\n\n[0024]可选的，在本申请的一些实施例中，形成所述第一过孔使所述阳极和所述阴极部分外露的步骤还包括:\n\n[0025]在所述第一过孔的内侧壁也形成有所述反射层。\n\n[0026]可选的，在本申请的一些实施例中，提供LED芯片的步骤还包括：\n\n[0027]提供的所述LED芯片为蓝光LED芯片。\n\n[0028]可选的，在本申请的一些实施例中，将所述LED芯片转移到所述第一过孔内的步骤还包括：\n\n[0029]将提供的LED芯片分别与所述阳极和所述阴极连接设置。\n\n[0030]可选的，在本申请的一些实施例中，在所述LED芯片上方通过喷墨打印的方式制备得到量子点色转换层的步骤还包括：\n\n[0031]采用喷墨打印的方式在所述第一过孔内形成所述量子点色转换层。\n\n[0032]可选的，在本申请的一些实施例中，形成所述量子点色转换层的步骤还包括：\n\n[0033]经过烘干、固化后形成的所述量子点色转换层的厚度小于或等于所述第一过孔的深度。\n\n[0034]在所述第一过孔内，所述阳极、所述阴极的部分表面以及所述第一过孔的内侧壁设置有反射层。\n\n[0035]本申请实施例提供的Micro LED显示面板包括衬底，位于所述衬底上方且背向所述衬底层叠设置的缓冲层、有源层、第一栅绝缘层，设置在所述第一栅绝缘层上的栅极、阳极、阴极，设置在第一栅绝缘层上方的第二栅绝缘层、层间绝缘层、平坦层，所述第二栅绝缘层、所述层间绝缘层、所述平坦层贯穿设置有第一过孔，其中，所述阳极和所述阴极下沉到与栅极同层且相互绝缘设置，所述第一过孔的底部延伸至所述阳极和所述阴极所在层，所述阳极和所述阴极部分外露在所述第一过孔内；通过将阳极、阴极下沉到与栅极同层设置，增加了所述第一过孔的深度，使打印形成所述量子点转换层时墨滴较难溢出所述第一过孔，且量子点色转换层的厚度小于所述第一过孔的深度，使得Micro LED显示面板的厚度不会因设置量子点色转换层而增加，缓解了现有Micro LED显示面板存在设置量子点薄膜增大了厚度的技术问题。\n\n附图说明\n\n[0036]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0037]图1是本申请实施例提供的Micro LED显示面板的截面示意图；\n\n[0038]图2A是本申请实施例提供的Micro LED显示面板制备方法中形成量子点转换层的第一种截面示意图；\n\n[0039]图2B是本申请实施例提供的Micro LED显示面板制备方法中形成量子点转换层的第二种截面示意图；\n\n[0040]图3是本申请实施例提供的Micro LED显示面板制备方法的流程图。\n\n[0041]附图标记说明：\n\n[0042]\n\n具体实施方式\n\n[0043]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0044]本申请实施例提供一种Micro LED显示面板和一种Micro LED显示面板制备方法。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0045]如图1所示，本申请实施例提供的Micro LED显示面板1包括衬底10、同层且绝缘的设置在所述衬底10上方的栅极501、阳极502、阴极503、设置在所述栅极501、所述阳极502、所述阴极503上方的第二栅绝缘层60、层间绝缘层70、平坦层90，所述第二栅绝缘层60、所述层间绝缘层70、所述平坦层90贯穿设置有第一过孔H1，其中，所述阳极502和所述阴极503下沉到与栅极501同层且相互绝缘设置，所述第一过孔H1的底部延伸至所述阳极502和所述阴极503所在层，所述阳极502和所述阴极503部分外露在所述第一过孔H1内。\n\n[0046]在本实施例中，Micro LED显示面板1包括衬底10、同层且绝缘的设置在所述衬底10上方的栅极501、阳极502、阴极503、设置在所述栅极501、所述阳极502、所述阴极503上方的第二栅绝缘层60、层间绝缘层70、平坦层90，所述第二栅绝缘层60、所述层间绝缘层70、所述平坦层90贯穿设置有第一过孔H1，其中，所述阳极502和所述阴极503下沉到与栅极501同层且相互绝缘设置，所述第一过孔H1的底部延伸至所述阳极502和所述阴极503所在层，所述阳极502和所述阴极503部分外露在所述第一过孔H1内；通过将阳极502、阴极503设置得与栅极501同层，增加了所述第一过孔H1的深度，使量子点转换层能设置在第一过孔H1内，且量子点色转换层130的厚度小于所述第一过孔H1的深度，使得Micro LED显示面板1的厚度不会因设置量子点色转换层130而增加，缓解了现有Micro LED显示面板1存在设置量子点薄膜增大了厚度的技术问题。\n\n[0047]其中，LED芯片110设置在所述第一过孔H1内且与所述阳极502、所述阴极503连接，在所述第一过孔H1内，所述LED芯片110上还设置有量子点色转换层130，所述量子点色转换层130的厚度小于所述第一过孔H1的深度。\n\n[0048]其中，所述Micro LED显示面板1还包括设置在所述衬底10上的缓冲层20、有源层30、第一栅绝缘层40，在所述第一栅绝缘层40上设置有所述栅极501、所述阳极502、所述阴极503，所述栅极501、所述阳极502、所述阴极503同层且绝缘设置。\n\n[0049]其中，所述量子点色转换层130填充在所述第一过孔H1内，且至少覆盖所述LED芯片110设置。\n\n[0050]其中，所述平坦层90上还设置有彩色滤光片100，所述彩色滤光片100包括间隔设置的黑色矩阵101和色阻块102。\n\n[0051]在一种实施例中，在所述第一过孔H1内，所述阳极502、所述阴极503的部分表面以及所述第一过孔H1的内侧壁设置有反射层120。\n\n[0052]其中，所述阳极502、所述阴极503的外露表面均设置有反射层120。\n\n[0053]其中，所述反射层120完全覆盖所述第一过孔H1的内侧壁设置，进一步的避免了侧面漏光的发生。\n\n[0054]在本实施例中，所述反射层120能提高Micro-LED的出光率，同时能缓解Micro-LED侧面出光的技术问题。\n\n[0055]在一种实施例中，所述第一栅绝缘层40、所述第二栅绝缘层60、所述层间绝缘层70中至少一绝缘膜层为氮化硅或氧化硅的一层或多层结构。\n\n[0056]在一种实施例中，所述源极801、所述漏极802通过第二过孔H2与所述有源层30连接，所述第二过孔H2贯穿所述第一栅绝缘层40、第二栅绝缘层60、层间绝缘层70设置。\n\n[0057]在一种实施例中，所述漏极802通过第三过孔H3与所述阳极502连接，所述第三过孔H3贯穿所述第二栅绝缘层60、层间绝缘层70设置。\n\n[0058]在一种实施例中，所述阴极503、所述阳极502可以为相同或不同的金属材料。阴极503通过其他过孔连接到外电路。\n\n[0059]在一种实施例中，所述第一过孔H1贯穿所述平坦层90、所述层间绝缘层70、所述第二栅绝缘层60设置。\n\n[0060]如图2A、图2B、图3所示，本申请实施例提供的Micro LED显示面板1制备方法，包括：\n\n[0061]S1：提供一阵列基板，所述阵列基板包括衬底10、设置在所述衬底10上的缓冲层20、设置在所述缓冲层20上的有源层30、设置在所述有源层30上的第一栅绝缘层40；\n\n[0062]S2：在所述第一栅绝缘层40上形成一金属膜层，将所述金属膜层制备得到同层且绝缘设置的栅极501、阳极502、阴极503；\n\n[0063]S3：在所述第一栅绝缘层40上制备得到第二栅绝缘层60、层间绝缘层70；\n\n[0064]S4：在所述第二栅绝缘层60、所述层间绝缘层70内形成第一过孔H1、第二过孔H2、第三过孔H3，所述第一过孔H1使所述阳极502和所述阴极503部分外露；\n\n[0065]S5：在所述第二栅绝缘层60上制备得到源极801、漏极802，所述源极801、所述漏极802通过所述第三过孔H3与所述有源层30连接，所述漏极802通过所述第二过孔H2与所述阳极502连接；\n\n[0066]S6：提供LED芯片110，将所述LED芯片110转移到所述第一过孔H1内；\n\n[0067]S7：在第一过孔H1内，在所述LED芯片110上方通过喷墨打印的方式制备得到量子点色转换层130。\n\n[0068]其中，喷墨打印采用喷墨仪器2喷涂墨滴21的方式形成量子点色转换层130。\n\n[0069]在一种实施例中，形成所述第一过孔H1使所述阳极502和所述阴极503部分外露的步骤还包括:在所述阳极502和所述阴极503外露区域的部分表面形成反射层120。\n\n[0070]在一种实施例中，所述反射层120还可以覆盖所述阳极502和所述阴极503外露区域的表面设置。\n\n[0071]在一种实施例中，形成所述第一过孔H1使所述阳极502和所述阴极503部分外露的步骤还包括:在所述第一过孔H1的内侧壁也形成有所述反射层120。\n\n[0072]在一种实施例中，提供LED芯片110的步骤还包括：提供的所述LED芯片110为蓝光LED芯片110。\n\n[0073]其中，所述蓝光LED芯片110不需要排列即可转移到衬底10上与TFT器件连接，再设置量子点色转换层130使部分蓝光LED芯片110发出的蓝光被转换为红光或绿光。\n\n[0074]在一种实施例中，将所述LED芯片110转移到所述第一过孔H1内的步骤还包括：将提供的LED芯片110分别与所述阳极502和所述阴极503连接设置。\n\n[0075]如图2A至2B在一种实施例中，在所述LED芯片110上方通过喷墨打印的方式制备得到量子点色转换层130的步骤还包括：采用喷墨打印的方式在所述第一过孔H1内形成所述量子点色转换层130。\n\n[0076]在一种实施例中，形成所述量子点色转换层130的步骤还包括：经过烘干、固化后形成的所述量子点色转换层130的厚度小于或等于所述第一过孔H1的深度。\n\n[0077]在一种实施例中，所述Micro LED显示面板1制备方法还包括：\n\n[0078]制备得到量子点色转换层130后，在所述量子点色转换层130和所述平坦层90上制备得到/设置一彩色滤光片100。\n\n[0079]具体的，形成所述Micro LED显示面板1的步骤包括：\n\n[0080]S11：在衬底10表面沉积缓冲层20；\n\n[0081]其中，衬底10可以为玻璃或柔性基板，柔性基板的材料可以为聚酰亚胺、聚对苯二甲酸乙二醇酯等；\n\n[0082]其中，缓冲层20可以为氮化硅或氧化硅的一层或多层结构；\n\n[0083]S12：缓冲层20上面沉积图案化的低温多晶硅材料，形成有源层30；\n\n[0084]S13：在有源层30的上表面沉积第一栅绝缘层40，所述第一栅绝缘层40可以为氮化硅或氧化硅的一层或多层结构；\n\n[0085]S14：在第一栅绝缘层40上面沉积栅极501、阴极503和阳极502，阴极503和阳极502可以为相同或不同的金属材料。阴极503通过其他过孔连接到外电路；\n\n[0086]S15：在栅极501上面沉积第二栅绝缘层60，所述第二栅绝缘层60可以为氮化硅或氧化硅的一层或多层结构；\n\n[0087]S16：在第二栅绝缘层60上面沉积层间绝缘层70；\n\n[0088]其中，所述层间绝缘层70可以为氮化硅或氧化硅的一层或多层结构；\n\n[0089]S17：在层间绝缘层70上面沉积源极801和漏极802；\n\n[0090]其中，所述源极801和所述漏极802的制备材料为钛/铝/钛或其他金属层；\n\n[0091]S18：制备第二过孔H2连接源极801/漏极802和有源层30，第三过孔H3连接漏极802和阳极502；\n\n[0092]其中，所述第二过孔H2贯穿所述第一栅绝缘层40、第二栅绝缘层60、层间绝缘层70设置，所述第三过孔H3贯穿所述第二栅绝缘层60、层间绝缘层70设置；\n\n[0093]S19：在源极801、漏极802上面沉积平坦层90；\n\n[0094]S20：过第二栅绝缘层60、层间绝缘层70和平坦层90进行开孔，形成第一过孔H1，其中，所述第一过孔H1用于将阳极502和阴极503暴露出来；\n\n[0095]S21：在开孔区阳极502或阴极503部分区域和侧壁沉积反射层120；\n\n[0096]其中，此反射层120是反射率较大的金属材料，比如氧化铟锡/银/氧化铟锡、铝、镁等；\n\n[0097]S22：提供LED芯片110，将LED芯片110通过转移衬底10上与TFT器件进行绑定组装；\n\n[0098]S23：在制备好的基板上面采用喷墨打印量子点材料，量子点材料的厚度小于第一过孔H1的厚度，然后进行烘干、固化；\n\n[0099]S24：烘干后，在上面贴附彩色滤光片100；\n\n[0100]其中，贴附彩色滤光片100的目的为减少环境光影响，增加对比度。\n\n[0101]本实施例提供的Micro LED显示面板包括衬底、同层且绝缘的设置在衬底上方的栅极、阳极、阴极，过第二栅绝缘层、层间绝缘层、平坦层设置有第一过孔，其中，阳极和阴极下沉到与栅极同层，第一过孔使阳极、阴极部分外露，在第一过孔内还设置有LED芯片量子点色转换层，量子点色转换层的厚度小于第一过孔的深度；通过将阳极、阴极设置得与栅极同层，增加了第一过孔的深度，使打印形成量子点转换层时墨滴较难溢出第一过孔，使得Micro LED显示面板的厚度不会因设置量子点色转换层而增加。\n\n[0102]以上对本申请实施例所提供的一种Micro LED显示面板及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及Micro LED显示技术领域，具体涉及一种Micro LED显示面板和一种Micro LED显示面板制备方法。\n\n背景技术\n\n[0002]目前micro-LED的巨量转移成本高且良率低，红绿蓝三种LED芯片分别转移的话，成本更高，所以现有技术通常采用蓝色Micro-LED加量子点薄膜的结构。\n\n[0003]目前的量子点薄膜都是一层较厚的附加薄膜，所以Micro LED显示面板的厚度相应的增加了很多。对于柔性显示不利，且成本贵。\n\n[0004]因此，现有Micro LED显示面板存在设置量子点薄膜增大了厚度的技术问题。\n\n发明内容\n\n[0005]本申请实施例提供一种Micro LED显示面板和一种Micro LED显示面板制备方法，可以缓解现有Micro LED显示面板存在设置量子点薄膜增大了厚度的技术问题。\n\n[0006]本申请实施例提供一种Micro LED显示面板，包括：\n\n[0007]衬底；\n\n[0008]位于所述衬底上方且背向所述衬底层叠设置的缓冲层、有源层、第一栅绝缘层；\n\n[0009]设置在所述第一栅绝缘层上的栅极、阳极、阴极；\n\n[0010]设置在第一栅绝缘层上方的第二栅绝缘层、层间绝缘层、平坦层，所述第二栅绝缘层、所述层间绝缘层、所述平坦层贯穿设置有第一过孔；\n\n[0011]其中，所述阳极和所述阴极下沉到与栅极同层且相互绝缘设置，所述第一过孔的底部延伸至所述阳极和所述阴极所在层，所述阳极和所述阴极部分外露在所述第一过孔内。\n\n[0012]可选的，在本申请的一些实施例中，在所述第一过孔内，所述阳极、所述阴极的部分表面以及所述第一过孔的内侧壁设置有反射层。\n\n[0013]可选的，在本申请的一些实施例中，所述第一过孔内还设置有LED芯片和量子点色转换层，所述LED芯片分别与所述阳极、所述阴极连接，所述量子点色转换层设置在所述LED芯片背向所述衬底的一侧，且所述量子点色转换层的厚度小于或等于所述第一过孔的高度。\n\n[0014]本申请实施例提供一种Micro LED显示面板制备方法，包括：\n\n[0015]提供一阵列基板，所述阵列基板包括衬底、设置在所述衬底上的缓冲层、设置在所述缓冲层上的有源层、设置在所述有源层上的第一栅绝缘层；\n\n[0016]在所述第一栅绝缘层上形成一金属膜层，将所述金属膜层制备得到同层且绝缘设置的栅极、阳极、阴极；\n\n[0017]在所述第一栅绝缘层上制备得到第二栅绝缘层、层间绝缘层；\n\n[0018]在所述第二栅绝缘层、所述层间绝缘层内形成第一过孔、第二过孔、第三过孔，所述第一过孔使所述阳极和所述阴极部分外露；\n\n[0019]在所述第二栅绝缘层上制备得到源极、漏极，所述源极、所述漏极通过所述第三过孔与所述有源层连接，所述漏极通过所述第二过孔与所述阳极连接；\n\n[0020]提供LED芯片，将所述LED芯片转移到所述第一过孔内；\n\n[0021]在第一过孔内，在所述LED芯片上方通过喷墨打印的方式制备得到量子点色转换层。\n\n[0022]可选的，在本申请的一些实施例中，形成所述第一过孔使所述阳极和所述阴极部分外露的步骤还包括:\n\n[0023]在所述阳极和所述阴极外露区域的部分表面形成反射层。\n\n[0024]可选的，在本申请的一些实施例中，形成所述第一过孔使所述阳极和所述阴极部分外露的步骤还包括:\n\n[0025]在所述第一过孔的内侧壁也形成有所述反射层。\n\n[0026]可选的，在本申请的一些实施例中，提供LED芯片的步骤还包括：\n\n[0027]提供的所述LED芯片为蓝光LED芯片。\n\n[0028]可选的，在本申请的一些实施例中，将所述LED芯片转移到所述第一过孔内的步骤还包括：\n\n[0029]将提供的LED芯片分别与所述阳极和所述阴极连接设置。\n\n[0030]可选的，在本申请的一些实施例中，在所述LED芯片上方通过喷墨打印的方式制备得到量子点色转换层的步骤还包括：\n\n[0031]采用喷墨打印的方式在所述第一过孔内形成所述量子点色转换层。\n\n[0032]可选的，在本申请的一些实施例中，形成所述量子点色转换层的步骤还包括：\n\n[0033]经过烘干、固化后形成的所述量子点色转换层的厚度小于或等于所述第一过孔的深度。\n\n[0034]在所述第一过孔内，所述阳极、所述阴极的部分表面以及所述第一过孔的内侧壁设置有反射层。\n\n[0035]本申请实施例提供的Micro LED显示面板包括衬底，位于所述衬底上方且背向所述衬底层叠设置的缓冲层、有源层、第一栅绝缘层，设置在所述第一栅绝缘层上的栅极、阳极、阴极，设置在第一栅绝缘层上方的第二栅绝缘层、层间绝缘层、平坦层，所述第二栅绝缘层、所述层间绝缘层、所述平坦层贯穿设置有第一过孔，其中，所述阳极和所述阴极下沉到与栅极同层且相互绝缘设置，所述第一过孔的底部延伸至所述阳极和所述阴极所在层，所述阳极和所述阴极部分外露在所述第一过孔内；通过将阳极、阴极下沉到与栅极同层设置，增加了所述第一过孔的深度，使打印形成所述量子点转换层时墨滴较难溢出所述第一过孔，且量子点色转换层的厚度小于所述第一过孔的深度，使得Micro LED显示面板的厚度不会因设置量子点色转换层而增加，缓解了现有Micro LED显示面板存在设置量子点薄膜增大了厚度的技术问题。\n\n附图说明\n\n[0036]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0037]图1是本申请实施例提供的Micro LED显示面板的截面示意图；\n\n[0038]图2A是本申请实施例提供的Micro LED显示面板制备方法中形成量子点转换层的第一种截面示意图；\n\n[0039]图2B是本申请实施例提供的Micro LED显示面板制备方法中形成量子点转换层的第二种截面示意图；\n\n[0040]图3是本申请实施例提供的Micro LED显示面板制备方法的流程图。\n\n[0041]附图标记说明：\n\n[0042]\n\n具体实施方式\n\n[0043]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0044]本申请实施例提供一种Micro LED显示面板和一种Micro LED显示面板制备方法。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0045]如图1所示，本申请实施例提供的Micro LED显示面板1包括衬底10、同层且绝缘的设置在所述衬底10上方的栅极501、阳极502、阴极503、设置在所述栅极501、所述阳极502、所述阴极503上方的第二栅绝缘层60、层间绝缘层70、平坦层90，所述第二栅绝缘层60、所述层间绝缘层70、所述平坦层90贯穿设置有第一过孔H1，其中，所述阳极502和所述阴极503下沉到与栅极501同层且相互绝缘设置，所述第一过孔H1的底部延伸至所述阳极502和所述阴极503所在层，所述阳极502和所述阴极503部分外露在所述第一过孔H1内。\n\n[0046]在本实施例中，Micro LED显示面板1包括衬底10、同层且绝缘的设置在所述衬底10上方的栅极501、阳极502、阴极503、设置在所述栅极501、所述阳极502、所述阴极503上方的第二栅绝缘层60、层间绝缘层70、平坦层90，所述第二栅绝缘层60、所述层间绝缘层70、所述平坦层90贯穿设置有第一过孔H1，其中，所述阳极502和所述阴极503下沉到与栅极501同层且相互绝缘设置，所述第一过孔H1的底部延伸至所述阳极502和所述阴极503所在层，所述阳极502和所述阴极503部分外露在所述第一过孔H1内；通过将阳极502、阴极503设置得与栅极501同层，增加了所述第一过孔H1的深度，使量子点转换层能设置在第一过孔H1内，且量子点色转换层130的厚度小于所述第一过孔H1的深度，使得Micro LED显示面板1的厚度不会因设置量子点色转换层130而增加，缓解了现有Micro LED显示面板1存在设置量子点薄膜增大了厚度的技术问题。\n\n[0047]其中，LED芯片110设置在所述第一过孔H1内且与所述阳极502、所述阴极503连接，在所述第一过孔H1内，所述LED芯片110上还设置有量子点色转换层130，所述量子点色转换层130的厚度小于所述第一过孔H1的深度。\n\n[0048]其中，所述Micro LED显示面板1还包括设置在所述衬底10上的缓冲层20、有源层30、第一栅绝缘层40，在所述第一栅绝缘层40上设置有所述栅极501、所述阳极502、所述阴极503，所述栅极501、所述阳极502、所述阴极503同层且绝缘设置。\n\n[0049]其中，所述量子点色转换层130填充在所述第一过孔H1内，且至少覆盖所述LED芯片110设置。\n\n[0050]其中，所述平坦层90上还设置有彩色滤光片100，所述彩色滤光片100包括间隔设置的黑色矩阵101和色阻块102。\n\n[0051]在一种实施例中，在所述第一过孔H1内，所述阳极502、所述阴极503的部分表面以及所述第一过孔H1的内侧壁设置有反射层120。\n\n[0052]其中，所述阳极502、所述阴极503的外露表面均设置有反射层120。\n\n[0053]其中，所述反射层120完全覆盖所述第一过孔H1的内侧壁设置，进一步的避免了侧面漏光的发生。\n\n[0054]在本实施例中，所述反射层120能提高Micro-LED的出光率，同时能缓解Micro-LED侧面出光的技术问题。\n\n[0055]在一种实施例中，所述第一栅绝缘层40、所述第二栅绝缘层60、所述层间绝缘层70中至少一绝缘膜层为氮化硅或氧化硅的一层或多层结构。\n\n[0056]在一种实施例中，所述源极801、所述漏极802通过第二过孔H2与所述有源层30连接，所述第二过孔H2贯穿所述第一栅绝缘层40、第二栅绝缘层60、层间绝缘层70设置。\n\n[0057]在一种实施例中，所述漏极802通过第三过孔H3与所述阳极502连接，所述第三过孔H3贯穿所述第二栅绝缘层60、层间绝缘层70设置。\n\n[0058]在一种实施例中，所述阴极503、所述阳极502可以为相同或不同的金属材料。阴极503通过其他过孔连接到外电路。\n\n[0059]在一种实施例中，所述第一过孔H1贯穿所述平坦层90、所述层间绝缘层70、所述第二栅绝缘层60设置。\n\n[0060]如图2A、图2B、图3所示，本申请实施例提供的Micro LED显示面板1制备方法，包括：\n\n[0061]S1：提供一阵列基板，所述阵列基板包括衬底10、设置在所述衬底10上的缓冲层20、设置在所述缓冲层20上的有源层30、设置在所述有源层30上的第一栅绝缘层40；\n\n[0062]S2：在所述第一栅绝缘层40上形成一金属膜层，将所述金属膜层制备得到同层且绝缘设置的栅极501、阳极502、阴极503；\n\n[0063]S3：在所述第一栅绝缘层40上制备得到第二栅绝缘层60、层间绝缘层70；\n\n[0064]S4：在所述第二栅绝缘层60、所述层间绝缘层70内形成第一过孔H1、第二过孔H2、第三过孔H3，所述第一过孔H1使所述阳极502和所述阴极503部分外露；\n\n[0065]S5：在所述第二栅绝缘层60上制备得到源极801、漏极802，所述源极801、所述漏极802通过所述第三过孔H3与所述有源层30连接，所述漏极802通过所述第二过孔H2与所述阳极502连接；\n\n[0066]S6：提供LED芯片110，将所述LED芯片110转移到所述第一过孔H1内；\n\n[0067]S7：在第一过孔H1内，在所述LED芯片110上方通过喷墨打印的方式制备得到量子点色转换层130。\n\n[0068]其中，喷墨打印采用喷墨仪器2喷涂墨滴21的方式形成量子点色转换层130。\n\n[0069]在一种实施例中，形成所述第一过孔H1使所述阳极502和所述阴极503部分外露的步骤还包括:在所述阳极502和所述阴极503外露区域的部分表面形成反射层120。\n\n[0070]在一种实施例中，所述反射层120还可以覆盖所述阳极502和所述阴极503外露区域的表面设置。\n\n[0071]在一种实施例中，形成所述第一过孔H1使所述阳极502和所述阴极503部分外露的步骤还包括:在所述第一过孔H1的内侧壁也形成有所述反射层120。\n\n[0072]在一种实施例中，提供LED芯片110的步骤还包括：提供的所述LED芯片110为蓝光LED芯片110。\n\n[0073]其中，所述蓝光LED芯片110不需要排列即可转移到衬底10上与TFT器件连接，再设置量子点色转换层130使部分蓝光LED芯片110发出的蓝光被转换为红光或绿光。\n\n[0074]在一种实施例中，将所述LED芯片110转移到所述第一过孔H1内的步骤还包括：将提供的LED芯片110分别与所述阳极502和所述阴极503连接设置。\n\n[0075]如图2A至2B在一种实施例中，在所述LED芯片110上方通过喷墨打印的方式制备得到量子点色转换层130的步骤还包括：采用喷墨打印的方式在所述第一过孔H1内形成所述量子点色转换层130。\n\n[0076]在一种实施例中，形成所述量子点色转换层130的步骤还包括：经过烘干、固化后形成的所述量子点色转换层130的厚度小于或等于所述第一过孔H1的深度。\n\n[0077]在一种实施例中，所述Micro LED显示面板1制备方法还包括：\n\n[0078]制备得到量子点色转换层130后，在所述量子点色转换层130和所述平坦层90上制备得到/设置一彩色滤光片100。\n\n[0079]具体的，形成所述Micro LED显示面板1的步骤包括：\n\n[0080]S11：在衬底10表面沉积缓冲层20；\n\n[0081]其中，衬底10可以为玻璃或柔性基板，柔性基板的材料可以为聚酰亚胺、聚对苯二甲酸乙二醇酯等；\n\n[0082]其中，缓冲层20可以为氮化硅或氧化硅的一层或多层结构；\n\n[0083]S12：缓冲层20上面沉积图案化的低温多晶硅材料，形成有源层30；\n\n[0084]S13：在有源层30的上表面沉积第一栅绝缘层40，所述第一栅绝缘层40可以为氮化硅或氧化硅的一层或多层结构；\n\n[0085]S14：在第一栅绝缘层40上面沉积栅极501、阴极503和阳极502，阴极503和阳极502可以为相同或不同的金属材料。阴极503通过其他过孔连接到外电路；\n\n[0086]S15：在栅极501上面沉积第二栅绝缘层60，所述第二栅绝缘层60可以为氮化硅或氧化硅的一层或多层结构；\n\n[0087]S16：在第二栅绝缘层60上面沉积层间绝缘层70；\n\n[0088]其中，所述层间绝缘层70可以为氮化硅或氧化硅的一层或多层结构；\n\n[0089]S17：在层间绝缘层70上面沉积源极801和漏极802；\n\n[0090]其中，所述源极801和所述漏极802的制备材料为钛/铝/钛或其他金属层；\n\n[0091]S18：制备第二过孔H2连接源极801/漏极802和有源层30，第三过孔H3连接漏极802和阳极502；\n\n[0092]其中，所述第二过孔H2贯穿所述第一栅绝缘层40、第二栅绝缘层60、层间绝缘层70设置，所述第三过孔H3贯穿所述第二栅绝缘层60、层间绝缘层70设置；\n\n[0093]S19：在源极801、漏极802上面沉积平坦层90；\n\n[0094]S20：过第二栅绝缘层60、层间绝缘层70和平坦层90进行开孔，形成第一过孔H1，其中，所述第一过孔H1用于将阳极502和阴极503暴露出来；\n\n[0095]S21：在开孔区阳极502或阴极503部分区域和侧壁沉积反射层120；\n\n[0096]其中，此反射层120是反射率较大的金属材料，比如氧化铟锡/银/氧化铟锡、铝、镁等；\n\n[0097]S22：提供LED芯片110，将LED芯片110通过转移衬底10上与TFT器件进行绑定组装；\n\n[0098]S23：在制备好的基板上面采用喷墨打印量子点材料，量子点材料的厚度小于第一过孔H1的厚度，然后进行烘干、固化；\n\n[0099]S24：烘干后，在上面贴附彩色滤光片100；\n\n[0100]其中，贴附彩色滤光片100的目的为减少环境光影响，增加对比度。\n\n[0101]本实施例提供的Micro LED显示面板包括衬底、同层且绝缘的设置在衬底上方的栅极、阳极、阴极，过第二栅绝缘层、层间绝缘层、平坦层设置有第一过孔，其中，阳极和阴极下沉到与栅极同层，第一过孔使阳极、阴极部分外露，在第一过孔内还设置有LED芯片量子点色转换层，量子点色转换层的厚度小于第一过孔的深度；通过将阳极、阴极设置得与栅极同层，增加了第一过孔的深度，使打印形成量子点转换层时墨滴较难溢出第一过孔，使得Micro LED显示面板的厚度不会因设置量子点色转换层而增加。\n\n[0102]以上对本申请实施例所提供的一种Micro LED显示面板及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10938, 23992, '技术领域\n\n[0001]本发明涉及显示技术领域，特别涉及一种显示面板及显示面板的制备方法。\n\n背景技术\n\n[0002]有机电致发光显示器件作为一种新型的平板显示，由于具有主动发光、发光亮度高、宽视角、响应速度快、低能耗以及可柔性化等特点，受到了越来越多的关注，成为可能取代液晶显示的下一代显示技术。\n\n[0003]如图1所示，现有技术的OLED显示面板100包括阵列基板101、位于阵列基板101表面的发光器件层102以及封装发光器件层102的封装层103，封装层103包括第一无机层1031、有机层1032和第二无机层1033。由于发光器件层102对水氧极其敏感，水氧入侵常常导致OLED器件失效，制约着OLED器件寿命，现有叠加第一无机层1031、有机层1032和第二无机层1033的封装层103具有良好的弯折特性和较好的水氧阻隔能力，然而，以氮硅或氧硅构建的化学气相沉积有机层1032往往不利于将封装发光器件层102产生热量的及时传导，散热能力较差，从而影响发光材料的性能和寿命。\n\n[0004]综上所述，需要提出一种新的显示面板，以解决上述技术中的以氮硅或氧硅构建的化学气相沉积有机层往往不利于将封装发光器件层产生热量的及时传导，散热能力较差，从而影响发光材料的性能和寿命的问题。\n\n发明内容\n\n[0005]本发明提供一种显示面板及显示面板的制备方法，能够解决现有技术中的以氮硅或氧硅构建的化学气相沉积有机层往往不利于将封装发光器件层产生热量的及时传导，散热能力较差，从而影响发光材料的性能和寿命的问题。\n\n[0006]本发明提供的技术方案如下：\n\n[0007]本发明实施例提供一种显示面板，包括基底、位于所述基底上的发光器件层以及位于所述发光器件层上的封装层，所述封装层内设置有散热结构，所述散热结构包括散热膜层以及导热柱，所述导热柱一端与所述发光器件层表面接触，另一端延伸至所述散热膜层内。\n\n[0008]根据本发明一优选实施例，所述导热柱阵列设置在所述封装层内。\n\n[0009]根据本发明一优选实施例，所述导热柱为具有上窄下宽的圆锥、棱锥、凸台中一种或一种以上结构，所述导热柱的宽底面与所述发光器件层表面接触，所述导热柱的窄顶面或顶点延伸至所述散热膜层内。\n\n[0010]根据本发明一优选实施例，所述导热柱的截面形状为正三角形，所述正三角形底边的长度与发光器件层长度比为1/100-1/10000。\n\n[0011]根据本发明一优选实施例，所述导热柱的材料包括透明石墨烯和透明环氧树脂中一种材料或两种复合材料。\n\n[0012]根据本发明一优选实施例，所述封装层包括位于所述发光器件层上的第一无机层、位于所述第一无机层上的有机层、位于所述有机层上的第二无机层；\n\n[0013]所述散热膜层位于所述有机层与所述第二无机层之间，所述导热柱贯穿所述第一无机层和所述有机层。\n\n[0014]根据本发明一优选实施例，所述散热膜层包括相贴合设置的第一散热膜层和第二散热膜层，所述导热柱延伸至所述第一散热膜层内，未与所述第二散热膜层接触；其中，所述第一散热膜层和所述第二散热膜层的材料均为具有介孔二氧化硅透明薄膜。\n\n[0015]根据本发明一优选实施例，所述第一散热膜层还添加有散热粒子，所述散热粒子为透明纳米金属氧化物颗粒；所述第二散热膜层还添加有干燥剂材料，所述干燥剂材料为Al2O3、TiO2、SiNx、SiCNx中一种或一种以上材料。\n\n[0016]根据本发明一优选实施例，所述发光器件层为OLED器件层、LED器件层、Mini-LED器件层或Micro-LED器件层中的一种器件层。\n\n[0017]依据上述显示面板，本发明还提供一种显示面板的制备方法，所述方法包括；\n\n[0018]步骤S10，提供一基底，在所述基底上依次制备发光器件层、第一无机层和有机层。\n\n[0019]步骤S20，在所述第一无机层和所述有机层上刻蚀上窄下宽的通孔，在所述通孔内制备导热柱，其中，所述导热柱的宽底边与所述发光器件层表面接触，所述导热柱的窄顶面或顶点凸出所述有机层表面。\n\n[0020]步骤S30，在所述有机层上依次制备散热膜层和第二无机层，且所述导热柱的窄顶面或顶点位于所述散热膜层内。\n\n[0021]本发明的有益效果：本发明实施例提供一种显示面板及显示面板的制备方法，该显示面板包括基底、位于基底上的发光器件层以及位于发光器件层上的封装层；封装层内设置有散热结构，散热结构包括散热膜层以及导热柱，导热柱一端与发光器件层表面接触，另一端延伸至散热膜层内，导热柱以透明石墨烯与透明环氧树脂为主体材料，且导热柱截面形状优选为正三角形结构，且等间距分布，导热柱底部起到充分吸收热量的作用，同时上顶点能够大幅减小水氧入侵的路径，这种设计能够有效地将发光器件层的热量传递至散热层，同时能够极大程度地限制水氧路径，有利于延长显示面板寿命，改善显示面板出光效果。\n\n附图说明\n\n[0022]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0023]图1为现有技术的显示面板的膜层结构示意图。\n\n[0024]图2为本发明提供一种显示面板的膜层一种结构示意图。\n\n[0025]图3为图2的导热柱放大示意图。\n\n[0026]图4为本发明提供一种显示面板的膜层另一种结构示意图。\n\n[0027]图5至图8为本发明提供一种显示面板的制备流程中结构示意图。\n\n具体实施方式\n\n[0028]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示，图中虚线表示在结构中并不存在的，仅仅说明结构的形状和位置。\n\n[0029]本发明针对现有技术中的以氮硅或氧硅构建的化学气相沉积有机层往往不利于将封装发光器件层产生热量的及时传导，散热能力较差，从而影响发光材料的性能和寿命的问题，本实施例能够解决该缺陷。\n\n[0030]本发明实施例提供一种显示面板，该显示面板包括基底、位于基底上的发光器件层以及位于发光器件层上的封装层，封装层内设置有散热结构，散热结构包括散热膜层以及导热柱，导热柱一端与发光器件层表面接触，另一端延伸至散热膜层内，导热柱能够及时将发光器件层的热量传递到散热层上，大幅提高了封装层的散热能力，有利于延长显示面板寿命，改善显示面板出光效果。\n\n[0031]本实施例中的基底优选为薄膜晶体管基板，还可以为无薄膜晶体管的驱动电路层，发光器件层优选为OLED器件层、LED器件层、Mini-LED器件层或Micro-LED器件层中的一种器件层。导热柱阵列设置在封装层内，导热柱的材料包括透明石墨烯和透明环氧树脂一种材料或两种复合材料。导热柱为具有上窄下宽的圆锥、棱锥、凸台中一种或一种以上结构，导热柱的宽底面与发光器件层表面接触，导热柱的窄顶面或顶点延伸至散热膜层内。若导热柱的截面形状优选为正三角形，正三角形底边的长度与发光器件层长度比为1/100-1/10000。正三角形截面的导热柱等间距分布在发光器件层表面，正三角形截面的目的是底边起到充分吸收热量的作用，同时上顶点能够大幅减小水氧入侵的路径，这种设计能够有效地将发光器件层中的热量传递至散热膜层，同时能够极大程度地限制水氧路径。\n\n[0032]封装层包括位于发光器件层上的第一无机层、位于第一无机层上的有机层、位于有机层上的第二无机层；散热膜层位于有机层与第二无机层之间，导热柱贯穿第一无机层和有机层。散热膜层包括相贴合设置的第一散热膜层和第二散热膜层，导热柱延伸至第一散热膜层内，未与第二散热膜层接触；其中，第一散热膜层和第二散热膜层的材料均为具有介孔二氧化硅透明薄膜，该介孔二氧化硅透明薄膜能够既拥有优异的隔绝水氧能力，同时能够及时的接收导热柱传导来的热量。\n\n[0033]具体地，如图2所示，本发明提供一种OLED显示面板的膜层一种结构示意图，该显示面板200包括基底201、位于基底201上的发光器件层202、位于发光器件层202上的第一无机层2031、位于第一无机层2031上的有机层2032、以及位于有机层2032上的第二无机层2033，第一无机层2031、有机层2032和第二无机层2033构成封装层203，封装层203内设置有散热结构204，散热结构204包括散热膜层2041以及导热柱2042，导热柱2042一端与发光器件层202表面接触，另一端延伸至散热膜层2041内。散热结构204能够及时将发光器件层202积累的热量散发出，避免发光器件层202发生过热，影响OLED显示面板200的显示品质。\n\n[0034]第一无机层2031和第二无机层2033优选为Al2O3、TiO2、SiNx、SiCNx、SiOx的其中一种或一种以上的组合材料，有机层2032采用喷墨打印技术制备，优选为亚克力、六甲基二甲硅醚、聚丙烯酸酯类、聚碳酸脂类、聚苯乙烯的其中一种或一种以上的组合材料。\n\n[0035]需要特别说明，为了提高散热效果，本实施例的第一无机层2031的有机层2032内阵列结构的导热柱2042，导热柱2042优选为具有上窄下宽的三维结构，例如三维结构为圆锥或棱锥。导热柱2042的宽底面与发光器件层202表面接触，导热柱2042的顶点延伸至散热膜层2041内。导热柱2042和散热膜层2041均为透明膜层，散热膜层2041为具有介孔二氧化硅透明薄膜，导热柱2042的材料包括透明石墨烯和透明环氧树脂中一种材料或两种复合材料，还包括但不限于氮化硼、碳材料等导热材料为增强相的复合材料。石墨烯具有非常好的热传导性能，纯的无缺陷的单层石墨烯的导热系数高达5300W/mK，是为止导热系数最高的碳材料，当它作为载体时，导热系数也可达600W/mK。\n\n[0036]本实施例的散热膜层2041包括相贴合设置的第一散热膜层20411和第二散热膜层20412，导热柱2042延伸至第一散热膜层20411内，未与第二散热膜层20412接触；其中，第一散热膜层20411和第二散热膜层20412的材料均为具有介孔二氧化硅透明薄膜。第一散热膜层20411设置有多个第一介孔，第二散热膜层20412设置有多个第二介孔，第一介孔和第二介孔错位设置；第一介孔和第二介孔的直径为2nm至50nm，可以进一步防止水蒸气和氧气的入侵。\n\n[0037]第一散热膜层20411还添加有散热粒子，散热粒子为透明纳米金属氧化物颗粒；第二散热膜层20412还添加有干燥剂材料，干燥剂材料为Al2O3、TiO2、SiNx、SiCNx中一种或一种以上材料。本实施例的第一散热膜层主要用于散热，第二散热膜层还用于阻隔水氧的作用，能够有效地防止水氧进一步入侵。\n\n[0038]本实施例的导热柱2042的截面形状优选为三角形，具有三角形截面的导热柱2042的底部与发光器件层202接触，顶点延伸至散热膜层2041接触内。散热膜层2041和导热柱2042的材料为透明材料，导热柱2042的截面形状选择为正三角形结构，且导热柱2042等间距分布。正三角形的目的是下边缘起到充分吸收热量的作用，同时上顶点能够大幅减小水氧入侵的路径，这种设计能够有效地将发光器件层202的热量传递至散热膜层2041，同时能够极大程度地限制水氧路径，正三角形底边的长度b与发光器件层202长度L比为1/100-1/10000，参见图3。在其他实施例中的导热柱2042的截面形状还可以不为正三角形，为其他类型的三角形，或其他形状。\n\n[0039]本实施例的基底201优选为薄膜晶体管阵列基板，包括衬底、位于衬底上的缓冲层、设置于缓冲层上的多个驱动薄膜晶体管、以及设置于多个驱动薄膜晶体管上的平坦化层，平坦化层上设置有过孔，衬底优选为黄色和透明聚酰亚胺叠加膜层；发光器件层202包括位于平坦化层表面的阳极、位于阳极表面的发光层、位于发光层表面的阴极，其中，阳极通过过孔与薄膜晶体管中漏极电性连接，具体地，平坦化层表面间隔分布多个隔垫物，任意相邻的两个隔垫物之间形成一个像素开口，例如隔垫物和隔垫物形成一个像素开口，在像素开口中，发光层平铺在阳极层上，阴极层平铺在发光层上。阳极通过阳极过孔与驱动薄膜晶体管中漏极电性接触，该驱动薄膜晶体管的源极与外接电源的正极相连，柔性印刷电路板贴附有相应驱动芯片，外接电源的负极通过绑定区，将相应电性号传递到电源走线层，最后电源走线层将相应电性号传递到显示区中阴极层，当外接电源正负两极为2V至10V的直流电压时，阳极层产生空穴，阴极层产生电子，在发光层相遇，电子和空穴分别带负电和正电，它们相互吸引，激发发光层中有机材料发光，以实现OLED显示面板200的正常工作。通过控制外接电源电压的大小，可调整发光层2023发光亮度，电压越大，亮度越高，反之越暗。当输入电压时，阳极的空穴与阴极层的电子就会在发光层中结合而发光，依其不同的配方，可产生红、绿、蓝(R、G、B)三基色，构成基本色彩。\n\n[0040]在另一种实施例中的基底201也可以不是薄膜晶体管阵列基板，基底201采用无源矩阵方式驱动发光器件层202。\n\n[0041]如图4所示，本发明提供一种OLED显示面板的膜层另一种结构示意图，本实施例的第一无机层2031的有机层2032内阵列结构的导热柱2042，导热柱2042优选为具有上窄下宽的三维结构，例如三维结构为凸台。导热柱2042截面形状优选为等腰梯形，在其他实施例中的导热柱2042的截面形状还可以不为等腰梯形，为其他类型的梯形，或其他形状。其他结构跟图2类似，此处不再赘述。\n\n[0042]依据上述显示面板，本发明还提供一种显示面板制备方法，所述方法包括；\n\n[0043]步骤S10，提供一基底，在所述基底上依次制备发光器件层、第一无机层和有机层。\n\n[0044]步骤S20，在所述第一无机层和所述有机层上刻蚀上窄下宽的通孔，在所述通孔内制备导热柱，其中，所述导热柱的宽底边与所述发光器件层表面接触，所述导热柱的窄顶面或顶点凸出所述有机层表面。\n\n[0045]步骤S30，在所述有机层上依次制备散热膜层和第二无机层，且所述导热柱的窄顶面或顶点位于所述散热膜层内。\n\n[0046]具体地，如图5所示，提供一基底201，在基底201上依次制备发光器件层202、第一无机层2031和有机层2032，基底201优选为薄膜晶体管阵列基板，发光器件层202为OLED器件层、LED器件层、Mini-LED器件层或Micro-LED器件层中的一种器件层，第一无机层2031优选为Al2O3、TiO2、SiNx、SiCNx、SiOx的其中一种或一种以上的组合材料，有机层2032采用喷墨打印技术制备，优选为亚克力、六甲基二甲硅醚、聚丙烯酸酯类、聚碳酸脂类、聚苯乙烯的其中一种或一种以上的组合材料。\n\n[0047]如图6和图7所示，在第一无机层2031和有机层2032刻蚀上窄下宽的通孔20321，在通孔20321内制备导热柱2042，且导热柱2042的宽底边与发光器件层表面202接触，导热柱的窄顶面或顶点凸出有机层2032表面接触，导热柱2042的截面形状优选为正三角形。\n\n[0048]如图8和图2所示，在有机层上依次制备散热膜层2041和第二无机层2033，且导热柱2042的窄顶面或顶点位于散热膜层2041内，散热膜层2041包括相贴合设置的第一散热膜层20411和第二散热膜层20412，导热柱2042延伸至第一散热膜层20411内，未与第二散热膜层20412接触。\n\n[0049]本发明实施例提供一种显示面板及显示面板的制备方法，该显示面板包括基底、位于基底上的发光器件层以及位于发光器件层上的封装层；封装层内设置有散热结构，散热结构包括散热膜层以及导热柱，导热柱一端与发光器件层表面接触，另一端延伸至散热膜层内，导热柱以透明石墨烯与透明环氧树脂为主体材料，且导热柱截面形状优选为正三角形结构，且等间距分布，导热柱底部起到充分吸收热量的作用，同时上顶点能够大幅减小水氧入侵的路径，这种设计能够有效地将发光器件层的热量传递至散热层，同时能够极大程度地限制水氧路径，有利于延长显示面板寿命，改善显示面板出光效果。\n\n[0050]综上，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及显示技术领域，特别涉及一种显示面板及显示面板的制备方法。\n\n背景技术\n\n[0002]有机电致发光显示器件作为一种新型的平板显示，由于具有主动发光、发光亮度高、宽视角、响应速度快、低能耗以及可柔性化等特点，受到了越来越多的关注，成为可能取代液晶显示的下一代显示技术。\n\n[0003]如图1所示，现有技术的OLED显示面板100包括阵列基板101、位于阵列基板101表面的发光器件层102以及封装发光器件层102的封装层103，封装层103包括第一无机层1031、有机层1032和第二无机层1033。由于发光器件层102对水氧极其敏感，水氧入侵常常导致OLED器件失效，制约着OLED器件寿命，现有叠加第一无机层1031、有机层1032和第二无机层1033的封装层103具有良好的弯折特性和较好的水氧阻隔能力，然而，以氮硅或氧硅构建的化学气相沉积有机层1032往往不利于将封装发光器件层102产生热量的及时传导，散热能力较差，从而影响发光材料的性能和寿命。\n\n[0004]综上所述，需要提出一种新的显示面板，以解决上述技术中的以氮硅或氧硅构建的化学气相沉积有机层往往不利于将封装发光器件层产生热量的及时传导，散热能力较差，从而影响发光材料的性能和寿命的问题。\n\n发明内容\n\n[0005]本发明提供一种显示面板及显示面板的制备方法，能够解决现有技术中的以氮硅或氧硅构建的化学气相沉积有机层往往不利于将封装发光器件层产生热量的及时传导，散热能力较差，从而影响发光材料的性能和寿命的问题。\n\n[0006]本发明提供的技术方案如下：\n\n[0007]本发明实施例提供一种显示面板，包括基底、位于所述基底上的发光器件层以及位于所述发光器件层上的封装层，所述封装层内设置有散热结构，所述散热结构包括散热膜层以及导热柱，所述导热柱一端与所述发光器件层表面接触，另一端延伸至所述散热膜层内。\n\n[0008]根据本发明一优选实施例，所述导热柱阵列设置在所述封装层内。\n\n[0009]根据本发明一优选实施例，所述导热柱为具有上窄下宽的圆锥、棱锥、凸台中一种或一种以上结构，所述导热柱的宽底面与所述发光器件层表面接触，所述导热柱的窄顶面或顶点延伸至所述散热膜层内。\n\n[0010]根据本发明一优选实施例，所述导热柱的截面形状为正三角形，所述正三角形底边的长度与发光器件层长度比为1/100-1/10000。\n\n[0011]根据本发明一优选实施例，所述导热柱的材料包括透明石墨烯和透明环氧树脂中一种材料或两种复合材料。\n\n[0012]根据本发明一优选实施例，所述封装层包括位于所述发光器件层上的第一无机层、位于所述第一无机层上的有机层、位于所述有机层上的第二无机层；\n\n[0013]所述散热膜层位于所述有机层与所述第二无机层之间，所述导热柱贯穿所述第一无机层和所述有机层。\n\n[0014]根据本发明一优选实施例，所述散热膜层包括相贴合设置的第一散热膜层和第二散热膜层，所述导热柱延伸至所述第一散热膜层内，未与所述第二散热膜层接触；其中，所述第一散热膜层和所述第二散热膜层的材料均为具有介孔二氧化硅透明薄膜。\n\n[0015]根据本发明一优选实施例，所述第一散热膜层还添加有散热粒子，所述散热粒子为透明纳米金属氧化物颗粒；所述第二散热膜层还添加有干燥剂材料，所述干燥剂材料为Al2O3、TiO2、SiNx、SiCNx中一种或一种以上材料。\n\n[0016]根据本发明一优选实施例，所述发光器件层为OLED器件层、LED器件层、Mini-LED器件层或Micro-LED器件层中的一种器件层。\n\n[0017]依据上述显示面板，本发明还提供一种显示面板的制备方法，所述方法包括；\n\n[0018]步骤S10，提供一基底，在所述基底上依次制备发光器件层、第一无机层和有机层。\n\n[0019]步骤S20，在所述第一无机层和所述有机层上刻蚀上窄下宽的通孔，在所述通孔内制备导热柱，其中，所述导热柱的宽底边与所述发光器件层表面接触，所述导热柱的窄顶面或顶点凸出所述有机层表面。\n\n[0020]步骤S30，在所述有机层上依次制备散热膜层和第二无机层，且所述导热柱的窄顶面或顶点位于所述散热膜层内。\n\n[0021]本发明的有益效果：本发明实施例提供一种显示面板及显示面板的制备方法，该显示面板包括基底、位于基底上的发光器件层以及位于发光器件层上的封装层；封装层内设置有散热结构，散热结构包括散热膜层以及导热柱，导热柱一端与发光器件层表面接触，另一端延伸至散热膜层内，导热柱以透明石墨烯与透明环氧树脂为主体材料，且导热柱截面形状优选为正三角形结构，且等间距分布，导热柱底部起到充分吸收热量的作用，同时上顶点能够大幅减小水氧入侵的路径，这种设计能够有效地将发光器件层的热量传递至散热层，同时能够极大程度地限制水氧路径，有利于延长显示面板寿命，改善显示面板出光效果。\n\n附图说明\n\n[0022]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0023]图1为现有技术的显示面板的膜层结构示意图。\n\n[0024]图2为本发明提供一种显示面板的膜层一种结构示意图。\n\n[0025]图3为图2的导热柱放大示意图。\n\n[0026]图4为本发明提供一种显示面板的膜层另一种结构示意图。\n\n[0027]图5至图8为本发明提供一种显示面板的制备流程中结构示意图。\n\n具体实施方式\n\n[0028]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示，图中虚线表示在结构中并不存在的，仅仅说明结构的形状和位置。\n\n[0029]本发明针对现有技术中的以氮硅或氧硅构建的化学气相沉积有机层往往不利于将封装发光器件层产生热量的及时传导，散热能力较差，从而影响发光材料的性能和寿命的问题，本实施例能够解决该缺陷。\n\n[0030]本发明实施例提供一种显示面板，该显示面板包括基底、位于基底上的发光器件层以及位于发光器件层上的封装层，封装层内设置有散热结构，散热结构包括散热膜层以及导热柱，导热柱一端与发光器件层表面接触，另一端延伸至散热膜层内，导热柱能够及时将发光器件层的热量传递到散热层上，大幅提高了封装层的散热能力，有利于延长显示面板寿命，改善显示面板出光效果。\n\n[0031]本实施例中的基底优选为薄膜晶体管基板，还可以为无薄膜晶体管的驱动电路层，发光器件层优选为OLED器件层、LED器件层、Mini-LED器件层或Micro-LED器件层中的一种器件层。导热柱阵列设置在封装层内，导热柱的材料包括透明石墨烯和透明环氧树脂一种材料或两种复合材料。导热柱为具有上窄下宽的圆锥、棱锥、凸台中一种或一种以上结构，导热柱的宽底面与发光器件层表面接触，导热柱的窄顶面或顶点延伸至散热膜层内。若导热柱的截面形状优选为正三角形，正三角形底边的长度与发光器件层长度比为1/100-1/10000。正三角形截面的导热柱等间距分布在发光器件层表面，正三角形截面的目的是底边起到充分吸收热量的作用，同时上顶点能够大幅减小水氧入侵的路径，这种设计能够有效地将发光器件层中的热量传递至散热膜层，同时能够极大程度地限制水氧路径。\n\n[0032]封装层包括位于发光器件层上的第一无机层、位于第一无机层上的有机层、位于有机层上的第二无机层；散热膜层位于有机层与第二无机层之间，导热柱贯穿第一无机层和有机层。散热膜层包括相贴合设置的第一散热膜层和第二散热膜层，导热柱延伸至第一散热膜层内，未与第二散热膜层接触；其中，第一散热膜层和第二散热膜层的材料均为具有介孔二氧化硅透明薄膜，该介孔二氧化硅透明薄膜能够既拥有优异的隔绝水氧能力，同时能够及时的接收导热柱传导来的热量。\n\n[0033]具体地，如图2所示，本发明提供一种OLED显示面板的膜层一种结构示意图，该显示面板200包括基底201、位于基底201上的发光器件层202、位于发光器件层202上的第一无机层2031、位于第一无机层2031上的有机层2032、以及位于有机层2032上的第二无机层2033，第一无机层2031、有机层2032和第二无机层2033构成封装层203，封装层203内设置有散热结构204，散热结构204包括散热膜层2041以及导热柱2042，导热柱2042一端与发光器件层202表面接触，另一端延伸至散热膜层2041内。散热结构204能够及时将发光器件层202积累的热量散发出，避免发光器件层202发生过热，影响OLED显示面板200的显示品质。\n\n[0034]第一无机层2031和第二无机层2033优选为Al2O3、TiO2、SiNx、SiCNx、SiOx的其中一种或一种以上的组合材料，有机层2032采用喷墨打印技术制备，优选为亚克力、六甲基二甲硅醚、聚丙烯酸酯类、聚碳酸脂类、聚苯乙烯的其中一种或一种以上的组合材料。\n\n[0035]需要特别说明，为了提高散热效果，本实施例的第一无机层2031的有机层2032内阵列结构的导热柱2042，导热柱2042优选为具有上窄下宽的三维结构，例如三维结构为圆锥或棱锥。导热柱2042的宽底面与发光器件层202表面接触，导热柱2042的顶点延伸至散热膜层2041内。导热柱2042和散热膜层2041均为透明膜层，散热膜层2041为具有介孔二氧化硅透明薄膜，导热柱2042的材料包括透明石墨烯和透明环氧树脂中一种材料或两种复合材料，还包括但不限于氮化硼、碳材料等导热材料为增强相的复合材料。石墨烯具有非常好的热传导性能，纯的无缺陷的单层石墨烯的导热系数高达5300W/mK，是为止导热系数最高的碳材料，当它作为载体时，导热系数也可达600W/mK。\n\n[0036]本实施例的散热膜层2041包括相贴合设置的第一散热膜层20411和第二散热膜层20412，导热柱2042延伸至第一散热膜层20411内，未与第二散热膜层20412接触；其中，第一散热膜层20411和第二散热膜层20412的材料均为具有介孔二氧化硅透明薄膜。第一散热膜层20411设置有多个第一介孔，第二散热膜层20412设置有多个第二介孔，第一介孔和第二介孔错位设置；第一介孔和第二介孔的直径为2nm至50nm，可以进一步防止水蒸气和氧气的入侵。\n\n[0037]第一散热膜层20411还添加有散热粒子，散热粒子为透明纳米金属氧化物颗粒；第二散热膜层20412还添加有干燥剂材料，干燥剂材料为Al2O3、TiO2、SiNx、SiCNx中一种或一种以上材料。本实施例的第一散热膜层主要用于散热，第二散热膜层还用于阻隔水氧的作用，能够有效地防止水氧进一步入侵。\n\n[0038]本实施例的导热柱2042的截面形状优选为三角形，具有三角形截面的导热柱2042的底部与发光器件层202接触，顶点延伸至散热膜层2041接触内。散热膜层2041和导热柱2042的材料为透明材料，导热柱2042的截面形状选择为正三角形结构，且导热柱2042等间距分布。正三角形的目的是下边缘起到充分吸收热量的作用，同时上顶点能够大幅减小水氧入侵的路径，这种设计能够有效地将发光器件层202的热量传递至散热膜层2041，同时能够极大程度地限制水氧路径，正三角形底边的长度b与发光器件层202长度L比为1/100-1/10000，参见图3。在其他实施例中的导热柱2042的截面形状还可以不为正三角形，为其他类型的三角形，或其他形状。\n\n[0039]本实施例的基底201优选为薄膜晶体管阵列基板，包括衬底、位于衬底上的缓冲层、设置于缓冲层上的多个驱动薄膜晶体管、以及设置于多个驱动薄膜晶体管上的平坦化层，平坦化层上设置有过孔，衬底优选为黄色和透明聚酰亚胺叠加膜层；发光器件层202包括位于平坦化层表面的阳极、位于阳极表面的发光层、位于发光层表面的阴极，其中，阳极通过过孔与薄膜晶体管中漏极电性连接，具体地，平坦化层表面间隔分布多个隔垫物，任意相邻的两个隔垫物之间形成一个像素开口，例如隔垫物和隔垫物形成一个像素开口，在像素开口中，发光层平铺在阳极层上，阴极层平铺在发光层上。阳极通过阳极过孔与驱动薄膜晶体管中漏极电性接触，该驱动薄膜晶体管的源极与外接电源的正极相连，柔性印刷电路板贴附有相应驱动芯片，外接电源的负极通过绑定区，将相应电性号传递到电源走线层，最后电源走线层将相应电性号传递到显示区中阴极层，当外接电源正负两极为2V至10V的直流电压时，阳极层产生空穴，阴极层产生电子，在发光层相遇，电子和空穴分别带负电和正电，它们相互吸引，激发发光层中有机材料发光，以实现OLED显示面板200的正常工作。通过控制外接电源电压的大小，可调整发光层2023发光亮度，电压越大，亮度越高，反之越暗。当输入电压时，阳极的空穴与阴极层的电子就会在发光层中结合而发光，依其不同的配方，可产生红、绿、蓝(R、G、B)三基色，构成基本色彩。\n\n[0040]在另一种实施例中的基底201也可以不是薄膜晶体管阵列基板，基底201采用无源矩阵方式驱动发光器件层202。\n\n[0041]如图4所示，本发明提供一种OLED显示面板的膜层另一种结构示意图，本实施例的第一无机层2031的有机层2032内阵列结构的导热柱2042，导热柱2042优选为具有上窄下宽的三维结构，例如三维结构为凸台。导热柱2042截面形状优选为等腰梯形，在其他实施例中的导热柱2042的截面形状还可以不为等腰梯形，为其他类型的梯形，或其他形状。其他结构跟图2类似，此处不再赘述。\n\n[0042]依据上述显示面板，本发明还提供一种显示面板制备方法，所述方法包括；\n\n[0043]步骤S10，提供一基底，在所述基底上依次制备发光器件层、第一无机层和有机层。\n\n[0044]步骤S20，在所述第一无机层和所述有机层上刻蚀上窄下宽的通孔，在所述通孔内制备导热柱，其中，所述导热柱的宽底边与所述发光器件层表面接触，所述导热柱的窄顶面或顶点凸出所述有机层表面。\n\n[0045]步骤S30，在所述有机层上依次制备散热膜层和第二无机层，且所述导热柱的窄顶面或顶点位于所述散热膜层内。\n\n[0046]具体地，如图5所示，提供一基底201，在基底201上依次制备发光器件层202、第一无机层2031和有机层2032，基底201优选为薄膜晶体管阵列基板，发光器件层202为OLED器件层、LED器件层、Mini-LED器件层或Micro-LED器件层中的一种器件层，第一无机层2031优选为Al2O3、TiO2、SiNx、SiCNx、SiOx的其中一种或一种以上的组合材料，有机层2032采用喷墨打印技术制备，优选为亚克力、六甲基二甲硅醚、聚丙烯酸酯类、聚碳酸脂类、聚苯乙烯的其中一种或一种以上的组合材料。\n\n[0047]如图6和图7所示，在第一无机层2031和有机层2032刻蚀上窄下宽的通孔20321，在通孔20321内制备导热柱2042，且导热柱2042的宽底边与发光器件层表面202接触，导热柱的窄顶面或顶点凸出有机层2032表面接触，导热柱2042的截面形状优选为正三角形。\n\n[0048]如图8和图2所示，在有机层上依次制备散热膜层2041和第二无机层2033，且导热柱2042的窄顶面或顶点位于散热膜层2041内，散热膜层2041包括相贴合设置的第一散热膜层20411和第二散热膜层20412，导热柱2042延伸至第一散热膜层20411内，未与第二散热膜层20412接触。\n\n[0049]本发明实施例提供一种显示面板及显示面板的制备方法，该显示面板包括基底、位于基底上的发光器件层以及位于发光器件层上的封装层；封装层内设置有散热结构，散热结构包括散热膜层以及导热柱，导热柱一端与发光器件层表面接触，另一端延伸至散热膜层内，导热柱以透明石墨烯与透明环氧树脂为主体材料，且导热柱截面形状优选为正三角形结构，且等间距分布，导热柱底部起到充分吸收热量的作用，同时上顶点能够大幅减小水氧入侵的路径，这种设计能够有效地将发光器件层的热量传递至散热层，同时能够极大程度地限制水氧路径，有利于延长显示面板寿命，改善显示面板出光效果。\n\n[0050]综上，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10939, 23993, '技术领域\n\n[0001]本申请涉及显示技术领域，特别是涉及一种Mini-LED背光模组及采用所述Mini-LED背光模组的显示装置。\n\n背景技术\n\n[0002]随着高阶TV市场对画质的要求越来越高，提升显示画质成为高阶TV的一个新需求。目前8K OLED受限于补偿电路、IGZO背板技术及驱动设计等问题，尚需开发。而Mini LED作为一个全新的显示技术，在亮度、功耗上较OLED有较大优势。由于Mini LED背板目前仅支持小尺寸，因此在作为大尺寸电视背光时，往往需要多块灯板拼接成大尺寸。但相邻两灯板之间会存在拼缝，该拼缝无任何遮挡物，因此LED照射到此处的光无法反射回去，此处的光利用率较低，因此拼缝处的亮度会降低，最终导致此处出现暗带。\n\n[0003]因此，针对现有技术中存在的缺陷，急需进行改进。\n\n发明内容\n\n[0004]本申请的目的在于提供一种Mini-LED背光模组及显示装置，用于改善所述灯板在所述拼缝处容易造成暗带的问题，提高显示效果。\n\n[0005]本申请实施例提供一种Mini-LED背光模组，所述Mini-LED背光模组包括：背板；灯板，铺设于所述背板上；其中所述灯板包括拼接设置的多块灯板单体，任意两块所述灯板单体之间存在有拼缝；以及至少一聚光元件，所述聚光元件设置于所述灯板单体远离所述背板的一侧，且覆盖所述拼缝。\n\n[0006]可选地，在本申请的一些实施例中，所述聚光元件包括凸透镜与凹面镜。\n\n[0007]可选地，在本申请的一些实施例中，所述凸透镜靠近所述背板的一侧设置有反光膜。\n\n[0008]可选地，在本申请的一些实施例中，所述凸透镜包括半球型透镜、四棱锥透镜、三棱柱透镜以及十字型三棱柱透镜中的至少一种；所述凹面镜包括球面凹面镜与四棱锥凹面镜。\n\n[0009]可选地，在本申请的一些实施例中，所述拼缝内设置有反光胶条。\n\n[0010]可选地，在本申请的一些实施例中，所述反光胶条的上表面与所述聚光元件的下表面平齐。\n\n[0011]可选地，在本申请的一些实施例中，所述灯板单体包括：一基板，铺设于所述背板上；多个灯珠，所述多个灯珠阵列设置于所述基板上；反射片，所述反射片设置于所述基板上，且暴露出所述灯珠。\n\n[0012]可选地，在本申请的一些实施例中，所述聚光元件的高度低于所述灯珠的高度。\n\n[0013]可选地，在本申请的一些实施例中，所述基板包括玻璃基板、陶瓷基板、金属基板以及PCB基板。\n\n[0014]相应地，本申请还提供一种显示装置，所述显示装置包括上述任一实施例中所述的Mini-LED背光模组。\n\n[0015]相较于现有技术，本申请提供一种Mini-LED背光模组及显示装置，通过设置聚光元件，将所述聚光元件设置于所述灯板单体远离所述背板的一侧，且覆盖所述拼缝。所述聚光元件具有聚光的作用，设置于所述拼缝处可以增加光的利用率，提高所述拼缝处的亮度，改善所述灯板在所述拼缝处容易造成暗带的问题，提高显示效果。\n\n[0016]进一步地，所述凸透镜靠近所述背板的一侧设置有反光膜，所述凸透镜一方面可以聚光，另一方面所述反光膜的设置，可以使照射到所述凸透镜底面的光线能够更多的反射至所述凸透镜的顶面，进一步提高所述凸透镜的聚光效果。所述拼缝内设置有反光胶条，所述反光胶条的反射率在90％以上，可以使起到固定所述相邻两灯板单体的作用，提高所述灯板单体之间的稳定性，当所述Mini-LED背光模组收到冲击时，设置于所述拼缝内的所述反光胶条可以在一定程度上起到缓冲应力的作用；另一方面能够提升所述聚光元件的聚光效果。\n\n附图说明\n\n[0017]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0018]图1是本申请Mini-LED背光模组的一种膜层断面结构示意图；\n\n[0019]图2是本申请Mini-LED背光模组的一种膜层平面结构示意图；\n\n[0020]图3是本申请Mini-LED背光模组的另一种膜层平面结构示意图；\n\n[0021]图4A至图4D是本申请聚光元件的多种实施结构的截面示意图；\n\n[0022]图5是本申请Mini-LED背光模组的另一种膜层断面结构示意图；\n\n[0023]图6是图5中A区域的一种膜层中的部分结构放大示意图。\n\n[0024]主要附图标记说明：\n\n[0025]\n\n具体实施方式\n\n[0026]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”、“下”、“左”和“右”可以是装置实际使用或工作状态的方向，也可以是参考附图中的图面方向，还可以是指相对的两个方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0027]具体地，请参阅图1至图4，本申请实施例提供一种Mini-LED背光模组10，包括背板100和铺设于所述背板100上的灯板200，所述灯板200包括拼接设置的多块灯板单体210，任意两块灯板单体210之间存在有拼缝300；所述背光模组10还包括至少一聚光元件400，所述聚光元件400设置于所述灯板单体210远离所述背板100的一侧，且覆盖所述拼缝300。所述聚光元件400具有聚光的作用，设置于所述拼缝300处可以增加光的利用率，提高所述拼缝300处的亮度，改善所述灯板200在所述拼缝300处容易造成暗带的问题，提高显示效果。所述灯板200铺设于所述背板100上，且所述灯板200包括拼接设置的多块灯板单体210。Mini-LED背光区域LED数量达几千甚至上万颗，由于受限于打样机台，Mini-LED产品均是小尺寸的灯板单体，然后将小尺寸灯板单体拼接成大尺寸灯板。具体灯板单体的数量可根据需要设置，此处不做具体限定。且这里的多块包括两块及两块以上。多块灯板单体的拼接方式，如根据尺寸要求可以呈单排多列进行拼接，也可以呈多排多列拼接。所述灯板200的具体铺设方式可参考现有技术，此处不再赘述。\n\n[0028]请参阅图2至图4D，在本申请一实施例中，所述聚光元件400包括凸透镜与凹面镜。所述凸透镜包括半球型透镜、四棱锥透镜401、三棱柱透镜403、T型三棱柱透镜404以及十字型三棱柱透镜402中的至少一种；所述凹面镜包括球面凹面镜与四棱锥凹面镜。\n\n[0029]可以理解的是，只要满足所述聚光元件400覆盖所述拼缝300即可，并不限定所述聚光元件400的种类，所述聚光元件400可以是不同种类的所述凸透镜或凹面镜组合而成。例如：如图2所示，所述聚光元件400分别由四棱锥透镜401、十字型三棱柱透镜402、三棱柱透镜403以及T型三棱柱透镜404组成。\n\n[0030]优选地，如图3所示，所述聚光元件400由多个四棱锥透镜401排列组成，所述四棱锥透镜401的底面优选为正方形面，即所述四棱锥透镜为正四棱锥透镜，这样设置可以保证所述聚光元件400在所述拼缝300处的聚光效果处处均等。\n\n[0031]如图4A至图4D所示，所述聚光元件400的截面可以是半圆形、三角形、凹平面形以及凹曲面形，分别对应不同种类的聚光元件。例如：所述半圆形截面对应所述半球型透镜，所述三角形截面对应所述四棱锥透镜401、所述三棱柱透镜403、所述T型三棱柱透镜404以及所述十字型三棱柱透镜402等；所述凹平面形截面对的所述四棱锥凹面镜，所述凹曲面形截面对应所述球面凹面镜等。\n\n[0032]进一步地，所述凸透镜靠近所述背板100的一侧设置有反光膜，所述凸透镜一方面可以聚光；另一方面，通过所述反光膜的设置，可以使照射到所述凸透镜底面的光线能够更多的反射至所述凸透镜的顶面，进一步提高所述凸透镜的聚光效果。例如：所述反光膜可以是在所述凸透镜的底面涂布荧光材料，具体地，荧光材料带由呈弥散状点分布的荧光材料点形成，且荧光材料点的分布密度由靠近所述拼缝300中线的位置向远离中线的位置减小。由于所述拼缝300造成的暗带在所述拼缝300中线位置更为明显，故设置荧光材料点的分布密度由靠近拼接处中线的位置向远离中线的位置减小，从而对所述拼缝300中间的补光作用强，边缘的补光作用弱，使得所述拼缝300处上方区域光学过渡更加自然，进一步改善了光学质量。\n\n[0033]如图5所示，在本申请一实施例中，所述拼缝300内设置有反光胶条500，所述反光胶条500的反射率在90％以上，可采用PA6T、PA9T、PCT、EMC或SMC材料。所述反光胶条500的上表面与所述聚光元件400的下表面平齐。可以理解的是，将所述反光胶条500设置于所述拼缝300内，可以使起到固定所述相邻两灯板单体210的作用，提高所述灯板单体210之间的稳定性，并且由于所述反光胶条500的硬度一般低于所述灯板单体210的硬度，当所述Mini-LED背光模组10收到冲击时，设置于所述拼缝300内的所述反光胶条500可以在一定程度上起到缓冲应力的作用；另一方面，所述反光胶条500的上表面与所述聚光元件400的下表面平齐可以充当上述实施例中的反光膜的作用，能够提升所述聚光元件400的聚光效果。\n\n[0034]如图6所示，在本申请一实施例中，所述灯板单体210包括：一基板211；多个灯珠212，所述多个灯珠212阵列设置于所述基板211上；反射片213，所述反射片213设置于所述基板211上，且暴露出所述灯珠212。所述反射片213具体可以通过背胶等粘贴于所述基板211上，所述反射片213上对应所述灯珠212的位置相应开设避让孔；所述反射片213具体可以呈整张结构，根据需要也可以呈拼接结构。所述基板211包括玻璃基板、陶瓷基板、金属基板以及PCB基板，本申请并不做限制。优选地，所述聚光元件400的高度低于所述灯珠212的高度，这样可以保证所述灯珠212所发出的光能够照射至所述聚光元件400上，并通过所述聚光元件400反射或折射聚光。\n\n[0035]优选地，所述聚光元件400的宽度大于所述灯板单体210的拼接处的所述拼缝300的宽度。例如：所述拼缝300的宽度为5mm时，则所述聚光元件400的宽度大于5mm，从而保证所述拼缝300处的补光效果。\n\n[0036]本申请还提供一种显示装置，所述显示装置可以包括本申请任意实施例所述的Mini-LED背光模组，因此，本申请提供的显示装置具有上述任一实施例中的技术方案所具有的技术效果，本申请提供的显示装置所具有的有益技术效果可参考上述实施例中的说明，不再赘述于此。本申请实施例提供的显示装置可以为手机，也可以为任何具有显示功能的电子产品，包括但不限于以下类别：电视机、笔记本电脑、桌上型显示器、平板电脑、数码相机、智能手环、智能眼镜、车载显示器、医疗设备、工控设备、触摸交互终端等，本申请实施例对此不作特殊限定。\n\n[0037]综上，本申请实施例提供一种Mini-LED背光模组10，包括背板100和铺设于所述背板100上的灯板200，所述灯板200包括拼接设置的多块灯板单体210，任意两块灯板单体210之间存在有拼缝300；所述背光模组10还包括至少一聚光元件400，所述聚光元件400设置于所述灯板单体210远离所述背板100的一侧，且覆盖所述拼缝300。所述聚光元件400具有聚光的作用，设置于所述拼缝300处可以增加光的利用率，提高所述拼缝300处的亮度，改善所述灯板200在所述拼缝300处容易造成暗带的问题，提高显示效果。\n\n[0038]进一步地，所述凸透镜靠近所述背板100的一侧设置有反光膜，所述凸透镜一方面可以聚光，另一方面所述反光膜的设置，可以使照射到所述凸透镜底面的光线能够更多的反射至所述凸透镜的顶面，进一步提高所述凸透镜的聚光效果。所述拼缝300内设置有反光胶条500，所述反光胶条500的反射率在90％以上，可以使起到固定所述相邻两灯板单体210的作用，提高所述灯板单体210之间的稳定性，当所述Mini-LED背光模组10收到冲击时，设置于所述拼缝300内的所述反光胶条500可以在一定程度上起到缓冲应力的作用；另一方面能够提升所述聚光元件400的聚光效果。\n\n[0039]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0040]以上对本申请实施例进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，特别是涉及一种Mini-LED背光模组及采用所述Mini-LED背光模组的显示装置。\n\n背景技术\n\n[0002]随着高阶TV市场对画质的要求越来越高，提升显示画质成为高阶TV的一个新需求。目前8K OLED受限于补偿电路、IGZO背板技术及驱动设计等问题，尚需开发。而Mini LED作为一个全新的显示技术，在亮度、功耗上较OLED有较大优势。由于Mini LED背板目前仅支持小尺寸，因此在作为大尺寸电视背光时，往往需要多块灯板拼接成大尺寸。但相邻两灯板之间会存在拼缝，该拼缝无任何遮挡物，因此LED照射到此处的光无法反射回去，此处的光利用率较低，因此拼缝处的亮度会降低，最终导致此处出现暗带。\n\n[0003]因此，针对现有技术中存在的缺陷，急需进行改进。\n\n发明内容\n\n[0004]本申请的目的在于提供一种Mini-LED背光模组及显示装置，用于改善所述灯板在所述拼缝处容易造成暗带的问题，提高显示效果。\n\n[0005]本申请实施例提供一种Mini-LED背光模组，所述Mini-LED背光模组包括：背板；灯板，铺设于所述背板上；其中所述灯板包括拼接设置的多块灯板单体，任意两块所述灯板单体之间存在有拼缝；以及至少一聚光元件，所述聚光元件设置于所述灯板单体远离所述背板的一侧，且覆盖所述拼缝。\n\n[0006]可选地，在本申请的一些实施例中，所述聚光元件包括凸透镜与凹面镜。\n\n[0007]可选地，在本申请的一些实施例中，所述凸透镜靠近所述背板的一侧设置有反光膜。\n\n[0008]可选地，在本申请的一些实施例中，所述凸透镜包括半球型透镜、四棱锥透镜、三棱柱透镜以及十字型三棱柱透镜中的至少一种；所述凹面镜包括球面凹面镜与四棱锥凹面镜。\n\n[0009]可选地，在本申请的一些实施例中，所述拼缝内设置有反光胶条。\n\n[0010]可选地，在本申请的一些实施例中，所述反光胶条的上表面与所述聚光元件的下表面平齐。\n\n[0011]可选地，在本申请的一些实施例中，所述灯板单体包括：一基板，铺设于所述背板上；多个灯珠，所述多个灯珠阵列设置于所述基板上；反射片，所述反射片设置于所述基板上，且暴露出所述灯珠。\n\n[0012]可选地，在本申请的一些实施例中，所述聚光元件的高度低于所述灯珠的高度。\n\n[0013]可选地，在本申请的一些实施例中，所述基板包括玻璃基板、陶瓷基板、金属基板以及PCB基板。\n\n[0014]相应地，本申请还提供一种显示装置，所述显示装置包括上述任一实施例中所述的Mini-LED背光模组。\n\n[0015]相较于现有技术，本申请提供一种Mini-LED背光模组及显示装置，通过设置聚光元件，将所述聚光元件设置于所述灯板单体远离所述背板的一侧，且覆盖所述拼缝。所述聚光元件具有聚光的作用，设置于所述拼缝处可以增加光的利用率，提高所述拼缝处的亮度，改善所述灯板在所述拼缝处容易造成暗带的问题，提高显示效果。\n\n[0016]进一步地，所述凸透镜靠近所述背板的一侧设置有反光膜，所述凸透镜一方面可以聚光，另一方面所述反光膜的设置，可以使照射到所述凸透镜底面的光线能够更多的反射至所述凸透镜的顶面，进一步提高所述凸透镜的聚光效果。所述拼缝内设置有反光胶条，所述反光胶条的反射率在90％以上，可以使起到固定所述相邻两灯板单体的作用，提高所述灯板单体之间的稳定性，当所述Mini-LED背光模组收到冲击时，设置于所述拼缝内的所述反光胶条可以在一定程度上起到缓冲应力的作用；另一方面能够提升所述聚光元件的聚光效果。\n\n附图说明\n\n[0017]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0018]图1是本申请Mini-LED背光模组的一种膜层断面结构示意图；\n\n[0019]图2是本申请Mini-LED背光模组的一种膜层平面结构示意图；\n\n[0020]图3是本申请Mini-LED背光模组的另一种膜层平面结构示意图；\n\n[0021]图4A至图4D是本申请聚光元件的多种实施结构的截面示意图；\n\n[0022]图5是本申请Mini-LED背光模组的另一种膜层断面结构示意图；\n\n[0023]图6是图5中A区域的一种膜层中的部分结构放大示意图。\n\n[0024]主要附图标记说明：\n\n[0025]\n\n具体实施方式\n\n[0026]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”、“下”、“左”和“右”可以是装置实际使用或工作状态的方向，也可以是参考附图中的图面方向，还可以是指相对的两个方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0027]具体地，请参阅图1至图4，本申请实施例提供一种Mini-LED背光模组10，包括背板100和铺设于所述背板100上的灯板200，所述灯板200包括拼接设置的多块灯板单体210，任意两块灯板单体210之间存在有拼缝300；所述背光模组10还包括至少一聚光元件400，所述聚光元件400设置于所述灯板单体210远离所述背板100的一侧，且覆盖所述拼缝300。所述聚光元件400具有聚光的作用，设置于所述拼缝300处可以增加光的利用率，提高所述拼缝300处的亮度，改善所述灯板200在所述拼缝300处容易造成暗带的问题，提高显示效果。所述灯板200铺设于所述背板100上，且所述灯板200包括拼接设置的多块灯板单体210。Mini-LED背光区域LED数量达几千甚至上万颗，由于受限于打样机台，Mini-LED产品均是小尺寸的灯板单体，然后将小尺寸灯板单体拼接成大尺寸灯板。具体灯板单体的数量可根据需要设置，此处不做具体限定。且这里的多块包括两块及两块以上。多块灯板单体的拼接方式，如根据尺寸要求可以呈单排多列进行拼接，也可以呈多排多列拼接。所述灯板200的具体铺设方式可参考现有技术，此处不再赘述。\n\n[0028]请参阅图2至图4D，在本申请一实施例中，所述聚光元件400包括凸透镜与凹面镜。所述凸透镜包括半球型透镜、四棱锥透镜401、三棱柱透镜403、T型三棱柱透镜404以及十字型三棱柱透镜402中的至少一种；所述凹面镜包括球面凹面镜与四棱锥凹面镜。\n\n[0029]可以理解的是，只要满足所述聚光元件400覆盖所述拼缝300即可，并不限定所述聚光元件400的种类，所述聚光元件400可以是不同种类的所述凸透镜或凹面镜组合而成。例如：如图2所示，所述聚光元件400分别由四棱锥透镜401、十字型三棱柱透镜402、三棱柱透镜403以及T型三棱柱透镜404组成。\n\n[0030]优选地，如图3所示，所述聚光元件400由多个四棱锥透镜401排列组成，所述四棱锥透镜401的底面优选为正方形面，即所述四棱锥透镜为正四棱锥透镜，这样设置可以保证所述聚光元件400在所述拼缝300处的聚光效果处处均等。\n\n[0031]如图4A至图4D所示，所述聚光元件400的截面可以是半圆形、三角形、凹平面形以及凹曲面形，分别对应不同种类的聚光元件。例如：所述半圆形截面对应所述半球型透镜，所述三角形截面对应所述四棱锥透镜401、所述三棱柱透镜403、所述T型三棱柱透镜404以及所述十字型三棱柱透镜402等；所述凹平面形截面对的所述四棱锥凹面镜，所述凹曲面形截面对应所述球面凹面镜等。\n\n[0032]进一步地，所述凸透镜靠近所述背板100的一侧设置有反光膜，所述凸透镜一方面可以聚光；另一方面，通过所述反光膜的设置，可以使照射到所述凸透镜底面的光线能够更多的反射至所述凸透镜的顶面，进一步提高所述凸透镜的聚光效果。例如：所述反光膜可以是在所述凸透镜的底面涂布荧光材料，具体地，荧光材料带由呈弥散状点分布的荧光材料点形成，且荧光材料点的分布密度由靠近所述拼缝300中线的位置向远离中线的位置减小。由于所述拼缝300造成的暗带在所述拼缝300中线位置更为明显，故设置荧光材料点的分布密度由靠近拼接处中线的位置向远离中线的位置减小，从而对所述拼缝300中间的补光作用强，边缘的补光作用弱，使得所述拼缝300处上方区域光学过渡更加自然，进一步改善了光学质量。\n\n[0033]如图5所示，在本申请一实施例中，所述拼缝300内设置有反光胶条500，所述反光胶条500的反射率在90％以上，可采用PA6T、PA9T、PCT、EMC或SMC材料。所述反光胶条500的上表面与所述聚光元件400的下表面平齐。可以理解的是，将所述反光胶条500设置于所述拼缝300内，可以使起到固定所述相邻两灯板单体210的作用，提高所述灯板单体210之间的稳定性，并且由于所述反光胶条500的硬度一般低于所述灯板单体210的硬度，当所述Mini-LED背光模组10收到冲击时，设置于所述拼缝300内的所述反光胶条500可以在一定程度上起到缓冲应力的作用；另一方面，所述反光胶条500的上表面与所述聚光元件400的下表面平齐可以充当上述实施例中的反光膜的作用，能够提升所述聚光元件400的聚光效果。\n\n[0034]如图6所示，在本申请一实施例中，所述灯板单体210包括：一基板211；多个灯珠212，所述多个灯珠212阵列设置于所述基板211上；反射片213，所述反射片213设置于所述基板211上，且暴露出所述灯珠212。所述反射片213具体可以通过背胶等粘贴于所述基板211上，所述反射片213上对应所述灯珠212的位置相应开设避让孔；所述反射片213具体可以呈整张结构，根据需要也可以呈拼接结构。所述基板211包括玻璃基板、陶瓷基板、金属基板以及PCB基板，本申请并不做限制。优选地，所述聚光元件400的高度低于所述灯珠212的高度，这样可以保证所述灯珠212所发出的光能够照射至所述聚光元件400上，并通过所述聚光元件400反射或折射聚光。\n\n[0035]优选地，所述聚光元件400的宽度大于所述灯板单体210的拼接处的所述拼缝300的宽度。例如：所述拼缝300的宽度为5mm时，则所述聚光元件400的宽度大于5mm，从而保证所述拼缝300处的补光效果。\n\n[0036]本申请还提供一种显示装置，所述显示装置可以包括本申请任意实施例所述的Mini-LED背光模组，因此，本申请提供的显示装置具有上述任一实施例中的技术方案所具有的技术效果，本申请提供的显示装置所具有的有益技术效果可参考上述实施例中的说明，不再赘述于此。本申请实施例提供的显示装置可以为手机，也可以为任何具有显示功能的电子产品，包括但不限于以下类别：电视机、笔记本电脑、桌上型显示器、平板电脑、数码相机、智能手环、智能眼镜、车载显示器、医疗设备、工控设备、触摸交互终端等，本申请实施例对此不作特殊限定。\n\n[0037]综上，本申请实施例提供一种Mini-LED背光模组10，包括背板100和铺设于所述背板100上的灯板200，所述灯板200包括拼接设置的多块灯板单体210，任意两块灯板单体210之间存在有拼缝300；所述背光模组10还包括至少一聚光元件400，所述聚光元件400设置于所述灯板单体210远离所述背板100的一侧，且覆盖所述拼缝300。所述聚光元件400具有聚光的作用，设置于所述拼缝300处可以增加光的利用率，提高所述拼缝300处的亮度，改善所述灯板200在所述拼缝300处容易造成暗带的问题，提高显示效果。\n\n[0038]进一步地，所述凸透镜靠近所述背板100的一侧设置有反光膜，所述凸透镜一方面可以聚光，另一方面所述反光膜的设置，可以使照射到所述凸透镜底面的光线能够更多的反射至所述凸透镜的顶面，进一步提高所述凸透镜的聚光效果。所述拼缝300内设置有反光胶条500，所述反光胶条500的反射率在90％以上，可以使起到固定所述相邻两灯板单体210的作用，提高所述灯板单体210之间的稳定性，当所述Mini-LED背光模组10收到冲击时，设置于所述拼缝300内的所述反光胶条500可以在一定程度上起到缓冲应力的作用；另一方面能够提升所述聚光元件400的聚光效果。\n\n[0039]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0040]以上对本申请实施例进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10940, 23994, '技术领域\n\n[0001]本发明涉及显示技术领域，具体涉及一种驱动电路、一种显示面板及一种电子装置。\n\n背景技术\n\n[0002]由于位(bit)数越大，发光器件的亮度级数就越多，对显示效果越有利。而在现有的驱动电路中，只能通过数据信号实现发光器件亮度的控制，难以进一步提高发光器件的亮度等级。\n\n发明内容\n\n[0003]本发明实施例提供一种驱动电路、一种显示面板及一种电子装置，可以提高发光器件的亮度可调阶数。\n\n[0004]本发明实施例提供一种驱动电路，所述驱动电路包括：电压输出模块、发光器件以及亮度调节模块。所述电压输出模块用于输出第一电压信号；所述发光器件电性连接于所述电压输出模块和第二电压端之间；所述亮度调节模块电性连接于所述发光器件和所述电压输出模块之间，所述亮度调节模块用于在发光阶段控制所述第一电压信号作用于所述发光器件的频率，调节所述发光器件的平均亮度。\n\n[0005]可选地，在本发明的一些实施例中，所述亮度调节模块包括第一晶体管及控制单元。所述第一晶体管的源极和漏极中的一个电性连接于所述发光器件，所述第一晶体管的所述源极和所述漏极中的另一个电性连接于所述电压输出模块；所述控制单元电性连接于所述第一晶体管的栅极。\n\n[0006]可选地，在本发明的一些实施例中，所述控制单元包括第二晶体管及控制电路。所述第二晶体管的源极和漏极中的一个与所述第一晶体管的所述栅极连接，所述第二晶体管的所述源极和所述漏极中的另一个与第三电压端连接；所述控制电路电性连接于所述第二晶体管的栅极。\n\n[0007]可选地，在本发明的一些实施例中，所述亮度调节模块还包括第一电阻，所述第一电阻串联于所述电压输出模块与所述第一晶体管的所述栅极之间。\n\n[0008]可选地，在本发明的一些实施例中，所述亮度调节模块还包括第二电阻，所述第二电阻串联于所述发光器件与所述第二电压端之间，以及所述第一晶体管与所述第二电压端之间。\n\n[0009]可选地，在本发明的一些实施例中，所述亮度调节模块还包括第三晶体管，所述第三晶体管的源极和漏极中的一个电性连接于所述发光器件，所述第三晶体管的所述源极和所述漏极中的另一个与所述第二电压端连接，所述第三晶体管用于使所述发光器件两端的电压相等。\n\n[0010]可选地，在本发明的一些实施例中，所述驱动电路还包括发光控制模块，所述发光控制模块包括驱动晶体管及数据晶体管。所述驱动晶体管的源极和漏极中的一个电性连接于所述发光器件，所述驱动晶体管的所述源极和所述漏极中的另一个与所述第二电压端连接；所述数据晶体管的源极和漏极中的一个与所述驱动晶体管的栅极连接，所述数据晶体管的所述源极和所述漏极中的另一个与数据线连接，所述数据晶体管的栅极与扫描线电性连接。\n\n[0011]可选地，在本发明的一些实施例中，所述发光器件包括有机发光二极管、次毫米发光二极管或微型发光二极管。\n\n[0012]本发明还提供一种显示面板，包括任一上述的驱动电路。\n\n[0013]可选地，在本发明的一些实施例中，所述显示面板还包括背光模组，所述背光模组包括所述发光器件。\n\n[0014]可选地，在本发明的一些实施例中，所述显示面板还包括面板主体，所述面板主体包括所述发光器件。\n\n[0015]本发明还提供一种电子装置，包括任一上述的驱动电路，或任一上述的显示面板。\n\n[0016]在本发明提供的驱动电路、显示面板及电子装置中，所述驱动电路包括电压输出模块、发光器件以及亮度调节模块。所述电压输出模块用于输出第一电压信号；所述发光器件电性连接于所述电压输出模块和第二电压端之间；所述亮度调节模块电性连接于所述发光器件和所述电压输出模块之间，所述亮度调节模块用于在发光阶段控制所述第一电压信号作用于所述发光器件的频率，以使所述发光器件在发光状态与不发光状态之间进行切换，可在所述发光器件在所述发光阶段原本就具有一定亮度的基础上，进一步调节所述发光器件的平均亮度，提高所述发光器件的亮度可调级数。\n\n附图说明\n\n[0017]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0018]图1A～图1F是本发明实施例提供的驱动电路的结构示意图；\n\n[0019]图2A～图2B是对应图1C～图1F所示的驱动电路的控制时序图；\n\n[0020]图3A～图3B是本发明实施例提供的显示面板的结构示意图。\n\n具体实施方式\n\n[0021]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0022]具体地，如图1A～图1F是本发明实施例提供的驱动电路的结构示意图，本发明提供一种驱动电路，可选地，所述驱动电路为像素驱动电路或背光驱动电路。\n\n[0023]所述驱动电路包括发光器件D1、电压输出模块100、亮度调节模块200。\n\n[0024]可选地，所述发光器件D1包括有机发光二极管、次毫米发光二极管或微型发光二极管。\n\n[0025]所述亮度调节模块200与所述发光器件D1电性连接于所述电压输出模块100与第二电压端VE2之间，所述电压输出模块100用于输出第一电压信号V1。其中，所述第一电压信号V1为直流电压信号，所述第二电压端VE2被配置为提供第二电压信号V2，所述第二电压信号V2的电压值异于所述第一电压信号V1的电压值。\n\n[0026]进一步地，所述发光器件D1与所述第二电压端VE2电性连接，所述亮度调节模块200电性连接于所述发光器件D1和所述电压输出模块100之间，以通过所述亮度调节模块200实现所述发光器件D1与所述电压输出模块100的电性连接。\n\n[0027]可选地，所述第二电压端VE2可为公共接地端VSS，也可以为器件的电源端VDD。\n\n[0028]进一步地，所述第二电压端VE2为器件的电源端VDD，则所述发光器件D1的阳极与器件的电源端VDD电性连接，所述发光器件D1的阴极与所述亮度调节模块200电性连接，以通过所述亮度调节模块200实现所述发光器件D1与所述电压输出模块100电性连接，使所述电压输出模块100输出的所述第一电压信号V1可通过所述亮度调节模块200加载至所述发光器件D1的阴极(即A点)，如图1A所示。其中，所述第二电压信号V2的电压值大于所述第一电压信号V1的电压值。\n\n[0029]进一步地，所述第二电压端VE2为公共接地端VSS，则所述发光器件D1的阴极与公共接地端VSS电性连接，所述发光器件D1的阳极与所述亮度调节模块200电性连接，以通过所述亮度调节模块200实现所述发光器件D1与所述电压输出模块100电性连接，使所述电压输出模块100输出的所述第一电压信号V1可通过所述亮度调节模块200加载至所述发光器件D1的阳极(即A点)，如图1B所示。其中，所述第二电压信号V2的电压值小于所述第一电压信号V1的电压值。\n\n[0030]所述亮度调节模块200用于在发光阶段控制所述第一电压信号V1作用于所述发光器件D1的频率，通过控制所述第一电压信号V1作用于所述发光器件D1的频率，可以使所述发光器件D1在发光状态和不发光状态之间进行切换，以使所述发光器件D1在所述发光阶段原本就具有一定亮度的基础上，进一步调节所述发光器件D1的平均亮度，从而提高了所述发光器件D1的亮度可调级数。\n\n[0031]具体地，请参阅图1C～图1F，以所述第二电压端VE2为公共接地端VSS为例，对所述驱动电路的连接结构及工作原理进行说明。其中，所述第二电压端VE2为器件的电源端VDD时，所述驱动电路的连接结构及工作原理与所述第二电压端VE2为公共接地端VSS时的所述驱动电路的连接结构及工作原理类似，在此不再进行赘述。\n\n[0032]所述亮度调节模块200包括第一晶体管T1和控制单元201。\n\n[0033]所述第一晶体管T1电性连接于所述发光器件D1与所述电压输出模块100之间，所述第一晶体管T1用于将第一电压信号V1加载至所述发光器件D1的阳极。具体地，所述第一晶体管T1的源极和漏极中的一个电性连接于所述发光器件D1的所述阳极，所述第一晶体管T1的所述源极和所述漏极中的另一个电性连接于所述电压输出模块100。\n\n[0034]所述控制单元201电性连接于所述第一晶体管T1的栅极，所述控制单元201用于控制所述第一晶体管T1的导通与关断，利用所述第一晶体管T1的导通与关断调节所述第一电压信号V1作用于所述发光器件D1的频率。\n\n[0035]可选地，所述控制单元201包括现场可编程逻辑门阵列(Field ProgrammableGate Array，FPGA)。所述电压输出模块100可采用降压驱动芯片(即Buck IC)。\n\n[0036]进一步地，请继续参阅图1D，所述控制单元201还包括第二晶体管T2和控制电路2011。\n\n[0037]所述第二晶体管T2电性连接于第三电压端VE3和所述第一晶体管T1的所述栅极之间，所述第二晶体管T2用于根据亮度调节信号EC控制所述第一晶体管T1的导通与关断。具体地，所述第二晶体管T2的源极和漏极中的一个与所述第一晶体管T1的所述栅极连接，所述第二晶体管T2的所述源极和所述漏极中的另一个与所述第三电压端VE3连接。可选地，所述第三电压端VE3可为交流电源端，也可为直流电压端。进一步地，所述第三电压端VE3为直流电压端，所述第一晶体管T1为P型晶体管时，所述第三电压端VE3可与所述第二电压端VE2等电位，即所述第二电压端VE2和所述第三电压端VE3均为公共接地端VSS。\n\n[0038]所述控制电路2011用于产生所述亮度调节信号EC并控制所述第二晶体管T2的导通与关断，从而实现对所述第一电压信号V1作用于所述发光器件D1的频率的控制。具体地，所述控制电路2011电性连接于所述第二晶体管T2的栅极。可选地，所述控制电路2011为现场可编程逻辑门阵列(Field Programmable Gate Array，FPGA)。\n\n[0039]更进一步地，请继续参阅图1D～图1F，所述亮度调节模块200还包括：第一电阻R1，所述第一电阻R1串联于所述电压输出模块100与所述第一晶体管T1的所述栅极之间。\n\n[0040]更进一步地，请继续参阅图1E，所述亮度调节模块200还包括第二电阻R2，所述第二电阻R2串联于所述发光器件D1与所述第二电压端VE2之间，以及所述第一晶体管T1与所述第二电压端VE2之间，以在所述第一晶体管T1关断时，加快所述发光器件D1的关闭过程。可以理解的，所述第一电阻R1和所述第二电阻R2的阻值可根据实际需求设置。\n\n[0041]此外还可利用晶体管的方式实现对所述发光器件D1关闭过程的加速，即请参阅图1F，所述亮度调节模块200还包括第三晶体管T3，所述第三晶体管T3电性连接于所述发光器件D1与所述第二电压端VE2之间，所述第三晶体管T3用于使所述发光器件D1两端的电压相等，从而加快所述发光器件D1的关闭过程。具体地，所述第三晶体管T3的源极和漏极中的一个电性连接于所述发光器件D1的所述阳极，所述第三晶体管T3的所述源极和所述漏极中的另一个与所述第二电压端VE2连接。\n\n[0042]可选地，所述第三晶体管T3的栅极可电性连接于所述控制电路2011，以通过所述控制电路2011控制所述第三晶体管T3的导通与关断。进一步地，为避免向所述发光器件D1的阳极加载所述第一电压信号V1与加载所述第二电压信号V2时出现冲突，所述第一晶体管T1和所述第三晶体管T3不能同时导通。因此，在所述第二晶体管T2及所述第三晶体管T3均受所述控制电路2011所产生的所述亮度调节信号EC控制时，所述第二晶体管T2和所述第三晶体管T3的类型不同，即所述第二晶体管T2为P型晶体管和N型晶体管的其中一个，所述第三晶体管T3为P型晶体管和N型晶体管的另一个。\n\n[0043]请继续参阅图1A～图1F，所述驱动电路还包括发光控制模块300，所述发光控制模块300用于根据扫描线Scan载入的扫描信号Sn及数据线Data载入的数据信号Vdata控制所述发光器件D1发光，从而使所述发光器件D1处于所述发光阶段。\n\n[0044]可选地，所述发光控制模块300包括驱动晶体管Td和数据晶体管Tda。\n\n[0045]所述驱动晶体管Td电性连接于所述发光器件与所述第二电压端VE2之间，所述驱动晶体管Td用于根据所述数据信号Vdata产生驱动所述发光器件D1发光的驱动电流。具体地，所述驱动晶体管Td的源极和漏极中的一个电性连接于所述发光器件D1的阳极或阴极，所述驱动晶体管Td的所述源极和所述漏极中的另一个与所述第二电压端VE2连接。其中，所述第二电压端VE2可为公共接地端VSS，也可以为器件的电源端VDD。\n\n[0046]所述数据晶体管Tda电性连接于数据线Data与所述驱动晶体管Td之间，所述数据晶体管Tda用于根据所述扫描信号Sn控制所述驱动晶体管Td的导通与关断。可选地，所述数据晶体管Tda的源极和漏极中的一个与所述驱动晶体管Td的栅极连接，所述数据晶体管Tda的所述源极和所述漏极中的另一个与所述数据线Data连接，所述数据晶体管Tda的栅极与扫描线Scan电性连接。\n\n[0047]可以理解的，所述发光控制模块300不限于图1C～图1F所示的2T形式，即所述发光控制模块300还可为2T1C、5T1C、7T1C或7T2C等形式。其中T表示晶体管，C表示电容。\n\n[0048]其中，在所述驱动电路中，所述第一晶体管T1、所述第二晶体管T2、所述第三晶体管T3、所述驱动晶体管Td及所述数据晶体管Tda可为场效应晶体管。进一步地，所述场效应晶体管包括金属-氧化物半导体场效应晶体管、薄膜晶体管。可选地，所述第一晶体管T1、所述第二晶体管T2为金属-氧化物半导体场效应晶体管，所述驱动晶体管Td及所述数据晶体管Tda为薄膜晶体管。\n\n[0049]如图2A～图2B所示是对应图1C～图1F所示的驱动电路的控制时序图，下面以所述第一晶体管T1和所述第三晶体管T3为P型晶体管、所述第二晶体管T2、所述驱动晶体管Td及所述数据晶体管Tda为N型晶体管为例，对如图1C～图1F所示的驱动电路的工作原理进行分别说明。\n\n[0050]具体地，请继续参阅图1C和图2A，在所述扫描线Scan载入的所述扫描信号Sn为高电平时，所述数据晶体管Tda导通，所述数据线Data载入的所述数据信号Vdata为高电平，所述驱动晶体管Td导通，使所述驱动电路处于所述发光阶段。在此期间，若所述控制单元201向所述第一晶体管T1的所述栅极提供的所述亮度调节信号EC为高电平，则所述第一晶体管T1截止，所述发光器件D1不发光；若所述控制单元201向所述第一晶体管T1的所述栅极提供的所述亮度调节信号EC为低电平，则所述第一晶体管T1导通，所述电压输出模块100输出的所述第一电压信号V1被传输至所述发光器件D1的阳极(即A点)，所述发光器件D1的两端存在电压差，所述发光器件D1根据所述驱动晶体管Td产生的驱动电流发光，即此时所述发光器件D1的发光强度仍由所述数据信号Vdata确定。之后所述亮度调节信号EC由低电平跳变为高电平，再由高电平跳变为低电平，依次循环，使所述发光器件D1不断的在不发光状态与发光状态切换。直至所述数据信号Vdata或所述扫描信号Sn中的一者为低电平时，所述驱动晶体管Td截止，所述驱动电路的所述发光阶段结束。\n\n[0051]其中，所述亮度调节信号EC的中每个低电平的脉冲时长决定了每次所述第一电压信号V1作用于所述发光器件D1的有效时长，从而确定了所述发光器件D1每次的发光时长。所述亮度调节信号EC的中每个高电平的脉冲时长决定了所述发光器件D1每次处于不发光状态的时长。A点处的电位时序变化如图2A中的VA所示。\n\n[0052]即使每次所述发光器件D1处于发光状态时的发光强度由所述数据信号Vdata确定，但由于在整个所述发光阶段内，所述发光器件D1在发光状态与不发光状态之间进行切换，人眼感受到的明暗感觉会互相融合，从而产生一种恒定的平均亮度感。因此可以使所述发光器件D1在所述发光阶段原本就具有一定亮度的基础上，进一步提高所述发光器件D1的亮度可调级数。\n\n[0053]可以理解的，在所述发光阶段，所述亮度调节信号EC的一个周期的变化时间越长，所述第一电压信号V1作用于所述发光器件D1的频率越低。因此为提高所述第一电压信号V1作用于所述发光器件D1的频率，可控制所述亮度调节信号EC的周期，即在所述发光阶段调整所述亮度调节信号EC中每个低电平的个数、脉冲时长和每个高电平的个数、脉冲时长，从而使所述第一电压信号V1作用于所述发光器件D1的频率满足亮度级数的要求。可选地，所述亮度调节信号EC中低电平信号占所述发光阶段的时长可不等于所述亮度调节信号EC中高电平信号占所述发光阶段的时长。即所述亮度调节信号EC的占空比(亮度调节信号EC中高电平信号占所述发光阶段的时长的比例)可根据实际情况进行调整，如所述亮度调节信号EC的占空比为10％时为第一亮度；占空比为20％时为第二亮度；占空比为30％时为第三亮度；占空比为40％时为第四亮度等等，所述第一亮度、所述第二亮度、所述第三亮度及所述第四亮度表示不同的亮度，以通过调整亮度调节信号EC的占空比实现不同亮度级数的要求。可以理解的，根据所述数据信号Vdata的不同，和/或，所述第一电压信号V1作用于所述发光器件D1的频率，和/或所述第一电压信号V1作用于所述发光器件D1的有效总时长的不同，所述驱动电路在每次所述发光阶段得到的所述发光器件D1的可调级数不同。其中，所述第一电压信号V1作用于所述发光器件D1的有效总时长指在所述发光阶段每次所述第一电压信号V1作用于所述发光器件D1的有效时长之和。\n\n[0054]与之相似地，还可得到如图1D～图1F所示的驱动电路的工作原理。具体地，请继续参阅图1D和图2B，在所述扫描线Scan载入的所述扫描信号Sn为高电平时，所述数据晶体管Tda导通，所述数据线Data载入的所述数据信号Vdata为高电平，所述驱动晶体管Td导通，使所述驱动电路处于所述发光阶段。在此期间，若所述控制电路2011向所述第二晶体管T2的所述栅极提供的所述亮度调节信号EC为低电平，则所述第二晶体管T2截止，所述第一晶体管T1也截止，所述发光器件D1不发光；若所述控制电路2011向所述第二晶体管T2的所述栅极提供的所述亮度调节信号EC为高电平，则所述第二晶体管T2导通，所述第三电压端VE3载入的第三电压信号为低电平信号，所述第三电压信号被传输至所述第一晶体管T1的栅极，所述第一晶体管T1导通，所述电压输出模块100输出的所述第一电压信号V1被传输至所述发光器件D1的阳极(即A点)，所述发光器件D1的两端存在电压差，所述发光器件D1根据所述驱动晶体管Td产生的所述驱动电流发光。之后所述亮度调节信号EC由高电平跳变为低电平，再由低电平跳变为高电平，依次循环，使所述第二晶体管T2不断的在截止与导通状态切换，从而使所述第一晶体管T1不断的在截止与导通状态下切换，所述发光器件D1不断的在不发光状态与发光状态切换。直至所述数据信号Vdata或所述扫描信号Sn中的一者为低电平时，所述驱动晶体管Td截止，所述驱动电路的所述发光阶段结束。\n\n[0055]具体地，请继续参阅图1E和图2B，在所述扫描线Scan载入的所述扫描信号Sn为高电平时，所述数据晶体管Tda导通，所述数据线Data载入的所述数据信号Vdata为高电平，所述驱动晶体管Td导通，使所述驱动电路处于所述发光阶段。在此期间，若所述控制电路2011向所述第二晶体管T2的所述栅极提供的所述亮度调节信号EC为低电平，则所述第二晶体管T2截止，所述第一晶体管T1也截止，所述发光器件D1和所述第二电阻R2两端串联于所述第二电压端VE2，因此所述发光器件D1上无电流流过，所述发光器件D1不发光；若所述控制电路2011向所述第二晶体管T2的所述栅极提供的所述亮度调节信号EC为高电平，则所述第二晶体管T2导通，所述第三电压端VE3载入的第三电压信号为低电平信号，所述第三电压信号被传输至所述第一晶体管T1的栅极，所述第一晶体管T1导通，所述电压输出模块100输出的所述第一电压信号V1被传输至所述发光器件D1的阳极(即A点)，所述发光器件D1的两端存在电压差，所述发光器件D1根据所述驱动晶体管Td产生的所述驱动电流发光。之后所述亮度调节信号EC由高电平跳变为低电平，再由低电平跳变为高电平，依次循环，使所述第二晶体管T2不断的在截止与导通状态切换，从而使所述第一晶体管T1不断的在截止与导通状态下切换，所述发光器件D1不断的在不发光状态与发光状态切换。直至所述数据信号Vdata或所述扫描信号Sn中的一者为低电平时，所述驱动晶体管Td截止，所述驱动电路的所述发光阶段结束。\n\n[0056]具体地，请继续参阅图1F和图2B，在所述扫描线Scan载入的所述扫描信号Sn为高电平时，所述数据晶体管Tda导通，所述数据线Data载入的所述数据信号Vdata为高电平，所述驱动晶体管Td导通，所述驱动晶体管Td产生驱动所述发光器件D1发光的驱动电流，使所述驱动电路处于所述发光阶段。在此期间，若所述控制电路2011向所述第二晶体管T2的所述栅极提供的所述亮度调节信号EC为低电平，则所述第二晶体管T2截止，所述第一晶体管T1也截止，所述第三晶体管T3导通，所述第三晶体管T3的导通和所述驱动晶体管Td的导通使得所述发光器件D1的两端均与所述第二电压端VE2电性连接，因此所述发光器件D1上无电流流过，所述发光器件D1不发光；若所述控制电路2011向所述第二晶体管T2的所述栅极提供的所述亮度调节信号EC为高电平，则所述第二晶体管T2导通，所述第三电压端VE3载入的第三电压信号为低电平信号，所述第三电压信号被传输至所述第一晶体管T1的栅极，所述第一晶体管T1导通，所述电压输出模块100输出的所述第一电压信号V1被传输至所述发光器件D1的阳极(即A点)，所述发光器件D1的两端存在电压差，所述发光器件D1根据所述驱动晶体管Td产生的所述驱动电流发光。之后所述亮度调节信号EC由高电平跳变为低电平，再由低电平跳变为高电平，依次循环，使所述第二晶体管T2不断的在截止与导通状态切换，所述第三晶体管T3不断的在导通与截止状态切换，从而使所述第一晶体管T1不断的在截止与导通状态下切换，所述发光器件D1不断的在不发光状态与发光状态切换。直至所述数据信号Vdata或所述扫描信号Sn中的一者为低电平时，所述驱动晶体管Td截止，所述驱动电路的所述发光阶段结束。\n\n[0057]如图3A～图3B所示是本发明实施例提供的显示面板的结构示意图，本发明还提供一种显示面板，所述显示面板包括上述的任一所述驱动电路。\n\n[0058]可选地，所述显示面板包括被动发光显示面板、自发光显示面板、量子点显示面板等。\n\n[0059]具体地，如图3A所示，所述显示面板为被动发光显示面板，所述显示面板包括背光模组301及位于所述背光模组301上的面板主体302。其中，所述背光模组301可为侧入式背光模组或直下式背光模组。所述背光模组301包括所述驱动电路，所述发光器件D1用作背光源以便为所述面板主体302提供背光，通过所述背光模组301及所述面板主体302的相互配合实现所述显示面板的显示功能。\n\n[0060]进一步地，所述面板主体302还包括阵列基板3021、彩膜基板3022以及位于所述阵列基板3021及所述彩膜基板3022之间的框胶3023和液晶3024。更进一步地，所述面板主体302还包括偏光片、像素电极、公共电极、触控电极、配向层等未示出部分。\n\n[0061]具体地，如图3B所示，所述显示面板为自发光显示面板，所述显示面板包括面板主体311。其中，所述面板主体311包括多个所述驱动电路，多个所述发光器件D1作为多个子像素，以在多个所述发光器件D1发光时实现所述显示面板的显示功能。\n\n[0062]进一步地，所述面板主体311包括衬底3111、位于所述衬底3111上的第一金属层3112、第二金属层3113、有源层3114、第一电极层3115、第二电极层3116及发光层3117、像素定义层3118、绝缘层3119及平坦层3110。其中，所述第一金属层3112包括与所述有源层3114对位设置的栅极，所述栅极即对应所述驱动电路中各晶体管的栅极，所述第二金属层3113包括与所述有源层3114电性连接的源极和漏极，所述源极和漏极即对应所述驱动电路中各晶体管的源极和漏极。所述发光层3117位于所述第一电极层3115和所述第二电极层3116之间，且位于所述像素定义层3118的像素定义区内，所述第一电极层3115包括第一电极，所述第二电极层3116包括第二电极，每一所述发光器件D1包括所述第一电极、所述第二电极及所述发光层3117，所述第一电极和所述第二电极中的一者与所述驱动电路中的一晶体管电性连接。可选地，所述面板主体311还包括彩膜层、触控电极、传感器等未示出部分。\n\n[0063]本发明还提供一种电子装置，所述电子装置包括任一上述的所述驱动电路或任一上述的所述显示面板。\n\n[0064]可选地，所述电子装置包括运动手环、测温枪、电脑、手机等。\n\n[0065]以上对本申请实施例进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本发明涉及显示技术领域，具体涉及一种驱动电路、一种显示面板及一种电子装置。\n\n背景技术\n\n[0002]由于位(bit)数越大，发光器件的亮度级数就越多，对显示效果越有利。而在现有的驱动电路中，只能通过数据信号实现发光器件亮度的控制，难以进一步提高发光器件的亮度等级。\n\n发明内容\n\n[0003]本发明实施例提供一种驱动电路、一种显示面板及一种电子装置，可以提高发光器件的亮度可调阶数。\n\n[0004]本发明实施例提供一种驱动电路，所述驱动电路包括：电压输出模块、发光器件以及亮度调节模块。所述电压输出模块用于输出第一电压信号；所述发光器件电性连接于所述电压输出模块和第二电压端之间；所述亮度调节模块电性连接于所述发光器件和所述电压输出模块之间，所述亮度调节模块用于在发光阶段控制所述第一电压信号作用于所述发光器件的频率，调节所述发光器件的平均亮度。\n\n[0005]可选地，在本发明的一些实施例中，所述亮度调节模块包括第一晶体管及控制单元。所述第一晶体管的源极和漏极中的一个电性连接于所述发光器件，所述第一晶体管的所述源极和所述漏极中的另一个电性连接于所述电压输出模块；所述控制单元电性连接于所述第一晶体管的栅极。\n\n[0006]可选地，在本发明的一些实施例中，所述控制单元包括第二晶体管及控制电路。所述第二晶体管的源极和漏极中的一个与所述第一晶体管的所述栅极连接，所述第二晶体管的所述源极和所述漏极中的另一个与第三电压端连接；所述控制电路电性连接于所述第二晶体管的栅极。\n\n[0007]可选地，在本发明的一些实施例中，所述亮度调节模块还包括第一电阻，所述第一电阻串联于所述电压输出模块与所述第一晶体管的所述栅极之间。\n\n[0008]可选地，在本发明的一些实施例中，所述亮度调节模块还包括第二电阻，所述第二电阻串联于所述发光器件与所述第二电压端之间，以及所述第一晶体管与所述第二电压端之间。\n\n[0009]可选地，在本发明的一些实施例中，所述亮度调节模块还包括第三晶体管，所述第三晶体管的源极和漏极中的一个电性连接于所述发光器件，所述第三晶体管的所述源极和所述漏极中的另一个与所述第二电压端连接，所述第三晶体管用于使所述发光器件两端的电压相等。\n\n[0010]可选地，在本发明的一些实施例中，所述驱动电路还包括发光控制模块，所述发光控制模块包括驱动晶体管及数据晶体管。所述驱动晶体管的源极和漏极中的一个电性连接于所述发光器件，所述驱动晶体管的所述源极和所述漏极中的另一个与所述第二电压端连接；所述数据晶体管的源极和漏极中的一个与所述驱动晶体管的栅极连接，所述数据晶体管的所述源极和所述漏极中的另一个与数据线连接，所述数据晶体管的栅极与扫描线电性连接。\n\n[0011]可选地，在本发明的一些实施例中，所述发光器件包括有机发光二极管、次毫米发光二极管或微型发光二极管。\n\n[0012]本发明还提供一种显示面板，包括任一上述的驱动电路。\n\n[0013]可选地，在本发明的一些实施例中，所述显示面板还包括背光模组，所述背光模组包括所述发光器件。\n\n[0014]可选地，在本发明的一些实施例中，所述显示面板还包括面板主体，所述面板主体包括所述发光器件。\n\n[0015]本发明还提供一种电子装置，包括任一上述的驱动电路，或任一上述的显示面板。\n\n[0016]在本发明提供的驱动电路、显示面板及电子装置中，所述驱动电路包括电压输出模块、发光器件以及亮度调节模块。所述电压输出模块用于输出第一电压信号；所述发光器件电性连接于所述电压输出模块和第二电压端之间；所述亮度调节模块电性连接于所述发光器件和所述电压输出模块之间，所述亮度调节模块用于在发光阶段控制所述第一电压信号作用于所述发光器件的频率，以使所述发光器件在发光状态与不发光状态之间进行切换，可在所述发光器件在所述发光阶段原本就具有一定亮度的基础上，进一步调节所述发光器件的平均亮度，提高所述发光器件的亮度可调级数。\n\n附图说明\n\n[0017]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0018]图1A～图1F是本发明实施例提供的驱动电路的结构示意图；\n\n[0019]图2A～图2B是对应图1C～图1F所示的驱动电路的控制时序图；\n\n[0020]图3A～图3B是本发明实施例提供的显示面板的结构示意图。\n\n具体实施方式\n\n[0021]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0022]具体地，如图1A～图1F是本发明实施例提供的驱动电路的结构示意图，本发明提供一种驱动电路，可选地，所述驱动电路为像素驱动电路或背光驱动电路。\n\n[0023]所述驱动电路包括发光器件D1、电压输出模块100、亮度调节模块200。\n\n[0024]可选地，所述发光器件D1包括有机发光二极管、次毫米发光二极管或微型发光二极管。\n\n[0025]所述亮度调节模块200与所述发光器件D1电性连接于所述电压输出模块100与第二电压端VE2之间，所述电压输出模块100用于输出第一电压信号V1。其中，所述第一电压信号V1为直流电压信号，所述第二电压端VE2被配置为提供第二电压信号V2，所述第二电压信号V2的电压值异于所述第一电压信号V1的电压值。\n\n[0026]进一步地，所述发光器件D1与所述第二电压端VE2电性连接，所述亮度调节模块200电性连接于所述发光器件D1和所述电压输出模块100之间，以通过所述亮度调节模块200实现所述发光器件D1与所述电压输出模块100的电性连接。\n\n[0027]可选地，所述第二电压端VE2可为公共接地端VSS，也可以为器件的电源端VDD。\n\n[0028]进一步地，所述第二电压端VE2为器件的电源端VDD，则所述发光器件D1的阳极与器件的电源端VDD电性连接，所述发光器件D1的阴极与所述亮度调节模块200电性连接，以通过所述亮度调节模块200实现所述发光器件D1与所述电压输出模块100电性连接，使所述电压输出模块100输出的所述第一电压信号V1可通过所述亮度调节模块200加载至所述发光器件D1的阴极(即A点)，如图1A所示。其中，所述第二电压信号V2的电压值大于所述第一电压信号V1的电压值。\n\n[0029]进一步地，所述第二电压端VE2为公共接地端VSS，则所述发光器件D1的阴极与公共接地端VSS电性连接，所述发光器件D1的阳极与所述亮度调节模块200电性连接，以通过所述亮度调节模块200实现所述发光器件D1与所述电压输出模块100电性连接，使所述电压输出模块100输出的所述第一电压信号V1可通过所述亮度调节模块200加载至所述发光器件D1的阳极(即A点)，如图1B所示。其中，所述第二电压信号V2的电压值小于所述第一电压信号V1的电压值。\n\n[0030]所述亮度调节模块200用于在发光阶段控制所述第一电压信号V1作用于所述发光器件D1的频率，通过控制所述第一电压信号V1作用于所述发光器件D1的频率，可以使所述发光器件D1在发光状态和不发光状态之间进行切换，以使所述发光器件D1在所述发光阶段原本就具有一定亮度的基础上，进一步调节所述发光器件D1的平均亮度，从而提高了所述发光器件D1的亮度可调级数。\n\n[0031]具体地，请参阅图1C～图1F，以所述第二电压端VE2为公共接地端VSS为例，对所述驱动电路的连接结构及工作原理进行说明。其中，所述第二电压端VE2为器件的电源端VDD时，所述驱动电路的连接结构及工作原理与所述第二电压端VE2为公共接地端VSS时的所述驱动电路的连接结构及工作原理类似，在此不再进行赘述。\n\n[0032]所述亮度调节模块200包括第一晶体管T1和控制单元201。\n\n[0033]所述第一晶体管T1电性连接于所述发光器件D1与所述电压输出模块100之间，所述第一晶体管T1用于将第一电压信号V1加载至所述发光器件D1的阳极。具体地，所述第一晶体管T1的源极和漏极中的一个电性连接于所述发光器件D1的所述阳极，所述第一晶体管T1的所述源极和所述漏极中的另一个电性连接于所述电压输出模块100。\n\n[0034]所述控制单元201电性连接于所述第一晶体管T1的栅极，所述控制单元201用于控制所述第一晶体管T1的导通与关断，利用所述第一晶体管T1的导通与关断调节所述第一电压信号V1作用于所述发光器件D1的频率。\n\n[0035]可选地，所述控制单元201包括现场可编程逻辑门阵列(Field ProgrammableGate Array，FPGA)。所述电压输出模块100可采用降压驱动芯片(即Buck IC)。\n\n[0036]进一步地，请继续参阅图1D，所述控制单元201还包括第二晶体管T2和控制电路2011。\n\n[0037]所述第二晶体管T2电性连接于第三电压端VE3和所述第一晶体管T1的所述栅极之间，所述第二晶体管T2用于根据亮度调节信号EC控制所述第一晶体管T1的导通与关断。具体地，所述第二晶体管T2的源极和漏极中的一个与所述第一晶体管T1的所述栅极连接，所述第二晶体管T2的所述源极和所述漏极中的另一个与所述第三电压端VE3连接。可选地，所述第三电压端VE3可为交流电源端，也可为直流电压端。进一步地，所述第三电压端VE3为直流电压端，所述第一晶体管T1为P型晶体管时，所述第三电压端VE3可与所述第二电压端VE2等电位，即所述第二电压端VE2和所述第三电压端VE3均为公共接地端VSS。\n\n[0038]所述控制电路2011用于产生所述亮度调节信号EC并控制所述第二晶体管T2的导通与关断，从而实现对所述第一电压信号V1作用于所述发光器件D1的频率的控制。具体地，所述控制电路2011电性连接于所述第二晶体管T2的栅极。可选地，所述控制电路2011为现场可编程逻辑门阵列(Field Programmable Gate Array，FPGA)。\n\n[0039]更进一步地，请继续参阅图1D～图1F，所述亮度调节模块200还包括：第一电阻R1，所述第一电阻R1串联于所述电压输出模块100与所述第一晶体管T1的所述栅极之间。\n\n[0040]更进一步地，请继续参阅图1E，所述亮度调节模块200还包括第二电阻R2，所述第二电阻R2串联于所述发光器件D1与所述第二电压端VE2之间，以及所述第一晶体管T1与所述第二电压端VE2之间，以在所述第一晶体管T1关断时，加快所述发光器件D1的关闭过程。可以理解的，所述第一电阻R1和所述第二电阻R2的阻值可根据实际需求设置。\n\n[0041]此外还可利用晶体管的方式实现对所述发光器件D1关闭过程的加速，即请参阅图1F，所述亮度调节模块200还包括第三晶体管T3，所述第三晶体管T3电性连接于所述发光器件D1与所述第二电压端VE2之间，所述第三晶体管T3用于使所述发光器件D1两端的电压相等，从而加快所述发光器件D1的关闭过程。具体地，所述第三晶体管T3的源极和漏极中的一个电性连接于所述发光器件D1的所述阳极，所述第三晶体管T3的所述源极和所述漏极中的另一个与所述第二电压端VE2连接。\n\n[0042]可选地，所述第三晶体管T3的栅极可电性连接于所述控制电路2011，以通过所述控制电路2011控制所述第三晶体管T3的导通与关断。进一步地，为避免向所述发光器件D1的阳极加载所述第一电压信号V1与加载所述第二电压信号V2时出现冲突，所述第一晶体管T1和所述第三晶体管T3不能同时导通。因此，在所述第二晶体管T2及所述第三晶体管T3均受所述控制电路2011所产生的所述亮度调节信号EC控制时，所述第二晶体管T2和所述第三晶体管T3的类型不同，即所述第二晶体管T2为P型晶体管和N型晶体管的其中一个，所述第三晶体管T3为P型晶体管和N型晶体管的另一个。\n\n[0043]请继续参阅图1A～图1F，所述驱动电路还包括发光控制模块300，所述发光控制模块300用于根据扫描线Scan载入的扫描信号Sn及数据线Data载入的数据信号Vdata控制所述发光器件D1发光，从而使所述发光器件D1处于所述发光阶段。\n\n[0044]可选地，所述发光控制模块300包括驱动晶体管Td和数据晶体管Tda。\n\n[0045]所述驱动晶体管Td电性连接于所述发光器件与所述第二电压端VE2之间，所述驱动晶体管Td用于根据所述数据信号Vdata产生驱动所述发光器件D1发光的驱动电流。具体地，所述驱动晶体管Td的源极和漏极中的一个电性连接于所述发光器件D1的阳极或阴极，所述驱动晶体管Td的所述源极和所述漏极中的另一个与所述第二电压端VE2连接。其中，所述第二电压端VE2可为公共接地端VSS，也可以为器件的电源端VDD。\n\n[0046]所述数据晶体管Tda电性连接于数据线Data与所述驱动晶体管Td之间，所述数据晶体管Tda用于根据所述扫描信号Sn控制所述驱动晶体管Td的导通与关断。可选地，所述数据晶体管Tda的源极和漏极中的一个与所述驱动晶体管Td的栅极连接，所述数据晶体管Tda的所述源极和所述漏极中的另一个与所述数据线Data连接，所述数据晶体管Tda的栅极与扫描线Scan电性连接。\n\n[0047]可以理解的，所述发光控制模块300不限于图1C～图1F所示的2T形式，即所述发光控制模块300还可为2T1C、5T1C、7T1C或7T2C等形式。其中T表示晶体管，C表示电容。\n\n[0048]其中，在所述驱动电路中，所述第一晶体管T1、所述第二晶体管T2、所述第三晶体管T3、所述驱动晶体管Td及所述数据晶体管Tda可为场效应晶体管。进一步地，所述场效应晶体管包括金属-氧化物半导体场效应晶体管、薄膜晶体管。可选地，所述第一晶体管T1、所述第二晶体管T2为金属-氧化物半导体场效应晶体管，所述驱动晶体管Td及所述数据晶体管Tda为薄膜晶体管。\n\n[0049]如图2A～图2B所示是对应图1C～图1F所示的驱动电路的控制时序图，下面以所述第一晶体管T1和所述第三晶体管T3为P型晶体管、所述第二晶体管T2、所述驱动晶体管Td及所述数据晶体管Tda为N型晶体管为例，对如图1C～图1F所示的驱动电路的工作原理进行分别说明。\n\n[0050]具体地，请继续参阅图1C和图2A，在所述扫描线Scan载入的所述扫描信号Sn为高电平时，所述数据晶体管Tda导通，所述数据线Data载入的所述数据信号Vdata为高电平，所述驱动晶体管Td导通，使所述驱动电路处于所述发光阶段。在此期间，若所述控制单元201向所述第一晶体管T1的所述栅极提供的所述亮度调节信号EC为高电平，则所述第一晶体管T1截止，所述发光器件D1不发光；若所述控制单元201向所述第一晶体管T1的所述栅极提供的所述亮度调节信号EC为低电平，则所述第一晶体管T1导通，所述电压输出模块100输出的所述第一电压信号V1被传输至所述发光器件D1的阳极(即A点)，所述发光器件D1的两端存在电压差，所述发光器件D1根据所述驱动晶体管Td产生的驱动电流发光，即此时所述发光器件D1的发光强度仍由所述数据信号Vdata确定。之后所述亮度调节信号EC由低电平跳变为高电平，再由高电平跳变为低电平，依次循环，使所述发光器件D1不断的在不发光状态与发光状态切换。直至所述数据信号Vdata或所述扫描信号Sn中的一者为低电平时，所述驱动晶体管Td截止，所述驱动电路的所述发光阶段结束。\n\n[0051]其中，所述亮度调节信号EC的中每个低电平的脉冲时长决定了每次所述第一电压信号V1作用于所述发光器件D1的有效时长，从而确定了所述发光器件D1每次的发光时长。所述亮度调节信号EC的中每个高电平的脉冲时长决定了所述发光器件D1每次处于不发光状态的时长。A点处的电位时序变化如图2A中的VA所示。\n\n[0052]即使每次所述发光器件D1处于发光状态时的发光强度由所述数据信号Vdata确定，但由于在整个所述发光阶段内，所述发光器件D1在发光状态与不发光状态之间进行切换，人眼感受到的明暗感觉会互相融合，从而产生一种恒定的平均亮度感。因此可以使所述发光器件D1在所述发光阶段原本就具有一定亮度的基础上，进一步提高所述发光器件D1的亮度可调级数。\n\n[0053]可以理解的，在所述发光阶段，所述亮度调节信号EC的一个周期的变化时间越长，所述第一电压信号V1作用于所述发光器件D1的频率越低。因此为提高所述第一电压信号V1作用于所述发光器件D1的频率，可控制所述亮度调节信号EC的周期，即在所述发光阶段调整所述亮度调节信号EC中每个低电平的个数、脉冲时长和每个高电平的个数、脉冲时长，从而使所述第一电压信号V1作用于所述发光器件D1的频率满足亮度级数的要求。可选地，所述亮度调节信号EC中低电平信号占所述发光阶段的时长可不等于所述亮度调节信号EC中高电平信号占所述发光阶段的时长。即所述亮度调节信号EC的占空比(亮度调节信号EC中高电平信号占所述发光阶段的时长的比例)可根据实际情况进行调整，如所述亮度调节信号EC的占空比为10％时为第一亮度；占空比为20％时为第二亮度；占空比为30％时为第三亮度；占空比为40％时为第四亮度等等，所述第一亮度、所述第二亮度、所述第三亮度及所述第四亮度表示不同的亮度，以通过调整亮度调节信号EC的占空比实现不同亮度级数的要求。可以理解的，根据所述数据信号Vdata的不同，和/或，所述第一电压信号V1作用于所述发光器件D1的频率，和/或所述第一电压信号V1作用于所述发光器件D1的有效总时长的不同，所述驱动电路在每次所述发光阶段得到的所述发光器件D1的可调级数不同。其中，所述第一电压信号V1作用于所述发光器件D1的有效总时长指在所述发光阶段每次所述第一电压信号V1作用于所述发光器件D1的有效时长之和。\n\n[0054]与之相似地，还可得到如图1D～图1F所示的驱动电路的工作原理。具体地，请继续参阅图1D和图2B，在所述扫描线Scan载入的所述扫描信号Sn为高电平时，所述数据晶体管Tda导通，所述数据线Data载入的所述数据信号Vdata为高电平，所述驱动晶体管Td导通，使所述驱动电路处于所述发光阶段。在此期间，若所述控制电路2011向所述第二晶体管T2的所述栅极提供的所述亮度调节信号EC为低电平，则所述第二晶体管T2截止，所述第一晶体管T1也截止，所述发光器件D1不发光；若所述控制电路2011向所述第二晶体管T2的所述栅极提供的所述亮度调节信号EC为高电平，则所述第二晶体管T2导通，所述第三电压端VE3载入的第三电压信号为低电平信号，所述第三电压信号被传输至所述第一晶体管T1的栅极，所述第一晶体管T1导通，所述电压输出模块100输出的所述第一电压信号V1被传输至所述发光器件D1的阳极(即A点)，所述发光器件D1的两端存在电压差，所述发光器件D1根据所述驱动晶体管Td产生的所述驱动电流发光。之后所述亮度调节信号EC由高电平跳变为低电平，再由低电平跳变为高电平，依次循环，使所述第二晶体管T2不断的在截止与导通状态切换，从而使所述第一晶体管T1不断的在截止与导通状态下切换，所述发光器件D1不断的在不发光状态与发光状态切换。直至所述数据信号Vdata或所述扫描信号Sn中的一者为低电平时，所述驱动晶体管Td截止，所述驱动电路的所述发光阶段结束。\n\n[0055]具体地，请继续参阅图1E和图2B，在所述扫描线Scan载入的所述扫描信号Sn为高电平时，所述数据晶体管Tda导通，所述数据线Data载入的所述数据信号Vdata为高电平，所述驱动晶体管Td导通，使所述驱动电路处于所述发光阶段。在此期间，若所述控制电路2011向所述第二晶体管T2的所述栅极提供的所述亮度调节信号EC为低电平，则所述第二晶体管T2截止，所述第一晶体管T1也截止，所述发光器件D1和所述第二电阻R2两端串联于所述第二电压端VE2，因此所述发光器件D1上无电流流过，所述发光器件D1不发光；若所述控制电路2011向所述第二晶体管T2的所述栅极提供的所述亮度调节信号EC为高电平，则所述第二晶体管T2导通，所述第三电压端VE3载入的第三电压信号为低电平信号，所述第三电压信号被传输至所述第一晶体管T1的栅极，所述第一晶体管T1导通，所述电压输出模块100输出的所述第一电压信号V1被传输至所述发光器件D1的阳极(即A点)，所述发光器件D1的两端存在电压差，所述发光器件D1根据所述驱动晶体管Td产生的所述驱动电流发光。之后所述亮度调节信号EC由高电平跳变为低电平，再由低电平跳变为高电平，依次循环，使所述第二晶体管T2不断的在截止与导通状态切换，从而使所述第一晶体管T1不断的在截止与导通状态下切换，所述发光器件D1不断的在不发光状态与发光状态切换。直至所述数据信号Vdata或所述扫描信号Sn中的一者为低电平时，所述驱动晶体管Td截止，所述驱动电路的所述发光阶段结束。\n\n[0056]具体地，请继续参阅图1F和图2B，在所述扫描线Scan载入的所述扫描信号Sn为高电平时，所述数据晶体管Tda导通，所述数据线Data载入的所述数据信号Vdata为高电平，所述驱动晶体管Td导通，所述驱动晶体管Td产生驱动所述发光器件D1发光的驱动电流，使所述驱动电路处于所述发光阶段。在此期间，若所述控制电路2011向所述第二晶体管T2的所述栅极提供的所述亮度调节信号EC为低电平，则所述第二晶体管T2截止，所述第一晶体管T1也截止，所述第三晶体管T3导通，所述第三晶体管T3的导通和所述驱动晶体管Td的导通使得所述发光器件D1的两端均与所述第二电压端VE2电性连接，因此所述发光器件D1上无电流流过，所述发光器件D1不发光；若所述控制电路2011向所述第二晶体管T2的所述栅极提供的所述亮度调节信号EC为高电平，则所述第二晶体管T2导通，所述第三电压端VE3载入的第三电压信号为低电平信号，所述第三电压信号被传输至所述第一晶体管T1的栅极，所述第一晶体管T1导通，所述电压输出模块100输出的所述第一电压信号V1被传输至所述发光器件D1的阳极(即A点)，所述发光器件D1的两端存在电压差，所述发光器件D1根据所述驱动晶体管Td产生的所述驱动电流发光。之后所述亮度调节信号EC由高电平跳变为低电平，再由低电平跳变为高电平，依次循环，使所述第二晶体管T2不断的在截止与导通状态切换，所述第三晶体管T3不断的在导通与截止状态切换，从而使所述第一晶体管T1不断的在截止与导通状态下切换，所述发光器件D1不断的在不发光状态与发光状态切换。直至所述数据信号Vdata或所述扫描信号Sn中的一者为低电平时，所述驱动晶体管Td截止，所述驱动电路的所述发光阶段结束。\n\n[0057]如图3A～图3B所示是本发明实施例提供的显示面板的结构示意图，本发明还提供一种显示面板，所述显示面板包括上述的任一所述驱动电路。\n\n[0058]可选地，所述显示面板包括被动发光显示面板、自发光显示面板、量子点显示面板等。\n\n[0059]具体地，如图3A所示，所述显示面板为被动发光显示面板，所述显示面板包括背光模组301及位于所述背光模组301上的面板主体302。其中，所述背光模组301可为侧入式背光模组或直下式背光模组。所述背光模组301包括所述驱动电路，所述发光器件D1用作背光源以便为所述面板主体302提供背光，通过所述背光模组301及所述面板主体302的相互配合实现所述显示面板的显示功能。\n\n[0060]进一步地，所述面板主体302还包括阵列基板3021、彩膜基板3022以及位于所述阵列基板3021及所述彩膜基板3022之间的框胶3023和液晶3024。更进一步地，所述面板主体302还包括偏光片、像素电极、公共电极、触控电极、配向层等未示出部分。\n\n[0061]具体地，如图3B所示，所述显示面板为自发光显示面板，所述显示面板包括面板主体311。其中，所述面板主体311包括多个所述驱动电路，多个所述发光器件D1作为多个子像素，以在多个所述发光器件D1发光时实现所述显示面板的显示功能。\n\n[0062]进一步地，所述面板主体311包括衬底3111、位于所述衬底3111上的第一金属层3112、第二金属层3113、有源层3114、第一电极层3115、第二电极层3116及发光层3117、像素定义层3118、绝缘层3119及平坦层3110。其中，所述第一金属层3112包括与所述有源层3114对位设置的栅极，所述栅极即对应所述驱动电路中各晶体管的栅极，所述第二金属层3113包括与所述有源层3114电性连接的源极和漏极，所述源极和漏极即对应所述驱动电路中各晶体管的源极和漏极。所述发光层3117位于所述第一电极层3115和所述第二电极层3116之间，且位于所述像素定义层3118的像素定义区内，所述第一电极层3115包括第一电极，所述第二电极层3116包括第二电极，每一所述发光器件D1包括所述第一电极、所述第二电极及所述发光层3117，所述第一电极和所述第二电极中的一者与所述驱动电路中的一晶体管电性连接。可选地，所述面板主体311还包括彩膜层、触控电极、传感器等未示出部分。\n\n[0063]本发明还提供一种电子装置，所述电子装置包括任一上述的所述驱动电路或任一上述的所述显示面板。\n\n[0064]可选地，所述电子装置包括运动手环、测温枪、电脑、手机等。\n\n[0065]以上对本申请实施例进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10941, 23995, '技术领域\n\n[0001]本申请属于电子设备技术领域，尤其涉及一种液晶显示装置及其制备方法。\n\n背景技术\n\n[0002]微米LED(Micro LED)是新一代显示技术，比现有的OLED技术亮度更高、发光效率更好、但功耗更低。2017年5月，苹果已经开始相关显示技术的开发，同时2018年2月，三星在CES 2018上推出了Micro LED电视。众所周知，传统液晶电视的面板是不会发光的，它需要让LED背光层发射的光线穿过量子点层、色彩滤镜和其他多个面板层来产生图像。而OLED面板上的像素可独立发出光线和色彩，因此每个像素可以单独开启或关闭，从而实现绝对的黑色水平和无限的对比度。\n\n[0003]MicroLED在新一代显示领域拥有非常大的潜力，但是其本质依然是LED的自发光，因此目前Micro-LED仍具有散热差的问题，散热差会导致器件温度过高、寿命下降。\n\n[0004]因此需针对Micro-LED散热差的问题进行进一步的研究。\n\n发明内容\n\n[0005]本申请实施例提供一种液晶显示装置及其制备方法，以改善现有技术中Micro-LED散热差的问题。\n\n[0006]本申请实施例提供一种液晶显示装置，所述液晶显示装置包括：\n\n[0007]LED芯片；\n\n[0008]散热结构，所述散热结构与所述LED芯片连接，所述散热结构包括液晶分子层，所述液晶分子层包括多个液晶分子，每一所述液晶分子具有多个长脂肪链，不同所述液晶分子的多个长脂肪链均朝同一方向排列设置。\n\n[0009]可选的，多个所述液晶分子呈阵列排布设置，在所述液晶分子层上形成M个液晶分子行和N个液晶分子列。\n\n[0010]可选的，所述散热结构包括：\n\n[0011]第一基板，所述第一基板设置在所述液晶分子层的一侧；\n\n[0012]第二基板，所述第二基板设置在所述第一基板和所述液晶分子层之间；以及\n\n[0013]铜膜层，所述铜膜层设置在所述液晶分子层远离所述第二基板的一侧。\n\n[0014]可选的，所述长脂肪链与所述第二基板倾斜设置。\n\n[0015]可选的，所述第二基板的厚度大于所述铜膜层的厚度，所述第一基板的机械强度大于所述第二基板的机械强度，所述第二基板的导热强度大于所述第一基板的导热强度。\n\n[0016]可选的，所述液晶分子为六苯并蔻的衍生物中的一种或多种的组合。\n\n[0017]可选的，相邻两个所述长脂肪链相互抵接。\n\n[0018]可选的，所述液晶显示装置还包括：\n\n[0019]印刷电路板，所述印刷电路板设置在所述铜膜层远离所述液晶分子层的一侧，且与所述LED芯片电连接。\n\n[0020]本申请实施例还提供一种液晶显示装置的制备方法，所述制备方法包括：\n\n[0021]提供第一基板；\n\n[0022]在所述第一基板上涂抹第一材料形成第二基板；\n\n[0023]在所述第二基板上涂抹液晶分子形成液晶分子层；\n\n[0024]运用趋向滚轮将所述液晶分子层中的长脂肪链进行趋向处理形成导热膜层。\n\n[0025]可选的，所述制备方法还包括：\n\n[0026]在所述导热膜层上涂抹铜材料，形成铜膜层；\n\n[0027]在所述铜膜层上通过焊接或胶粘的方式制备印刷电路板；\n\n[0028]在所述印刷电路板上通过焊接方式制备LED芯片。\n\n[0029]本申请实施例中的液晶显示装置包括LED芯片和与LED芯片连接的散热结构，其中，散热结构包括多个液晶分子，每个液晶分子具有多个长脂肪链，且不同液晶分子的多个长脂肪链均朝同一方向排列设置。本实施例中不同液晶分子中的多个长脂肪链均朝同一方向排列设置，相比于不同液晶分子中的多个长脂肪链向不同方向排列，同一方向的排列的长脂肪链使得传递的热量更集中，进而提高了热量传递效率，改善了现有技术中Micro-LED具有散热差的问题。\n\n附图说明\n\n[0030]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其有益效果显而易见。\n\n[0031]图1为本申请实施例提供的液晶显示装置的第一种结构示意图。\n\n[0032]图2为本申请实施例提供的液晶显示装置的第二种结构示意图。\n\n[0033]图3为本申请实施例提供的液晶显示装置的第三种结构示意图。\n\n[0034]图4为本申请实施例提供的液晶显示装置中散热结构的第一种结构示意图。\n\n[0035]图5为本申请实施例提供的液晶显示装置中散热结构的第二种结构示意图。\n\n[0036]图6为本申请实施例提供的液晶显示装置的制作方法的第一种流程示意图。\n\n[0037]图7为本申请实施例提供的与图6所示的液晶显示装置的制作方法的各步骤对应的示意图。\n\n[0038]图8为本申请实施例提供的液晶显示装置的制作方法的第二种流程示意图。\n\n[0039]图9为本申请实施例提供的与图8所示的液晶显示装置的制作方法的各步骤对应的示意图。\n\n具体实施方式\n\n[0040]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0041]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0042]请参阅图1至图3，图1为本申请实施例提供的液晶显示装置的第一种结构示意图，图2为本申请实施例提供的液晶显示装置的第二种结构示意图，图3为本申请实施例提供的液晶显示装置的第三种结构示意图。本申请实施例提供一种液晶显示装置100，液晶显示装置100包括LED芯片6和散热结构10，散热结构10与LED芯片6连接。其中，散热结构10包括液晶分子层3，液晶分子层3包括多个液晶分子30，每个液晶分子30具有多个长脂肪链302，且不同液晶分子30的不同长脂肪链302均朝同一方向排列设置，可以使得热量从相同的方向传递出去，相比于不同液晶分子中的多个长脂肪链向不同方向排列，同一方向的排列的长脂肪链使得传递的热量更集中，进而提高了热量传递效率，改善了现有技术中Micro-LED具有散热差的问题。\n\n[0043]可以理解的是，每个脂肪链302之间紧密排列，可以使得散热效果更好。在一些实施例中，相邻两个长脂肪链302之间在预设范围之内相互抵接设置，在其他一些实施例中，相邻两个长脂肪链302之间相互间隔设置，可以通过脂肪链302之间单向传递热量将Micro-LED中的热量散去。其中，预设范围可以根据实际应用进行设置，只要可以使得散热结构10的散热效率相对于现有技术的散热效率有所提高即可。\n\n[0044]液晶分子30包括六苯并蔻301，以及在六苯并蔻301四周形成的长脂肪链302。需要说明的是，液晶分子30可以是六苯并蔻301的衍生物中的一种或多种的组合。具体的，液晶分子30可以是六苯并蔻301的衍生物中的一种，液晶分子30可以是多种六苯并蔻301的衍生物中的组合。在此不做具体的规定，只需要满足液晶分子30包括长脂肪链302即可。\n\n[0045]液晶分子30可以是盘状结构的分子也可以是杆状结构的分子，需要说明的是，盘状的液晶分子30膜层薄，导热性更好。在液晶显示装置100中，液晶分子30既可以绝缘，也可以散热。\n\n[0046]散热结构10还包括第一基板1、第二基板2和铜膜层4。第一基板1设置在液晶分子层3的一侧，主要用于支撑散热结构10的其他结构。在一些实施例中，第一基板1可以选择一些一定机械强度的材料制成形成以提高其支撑能力，诸如第一基板1可以采用金属铝材料制成。在其他一些实施例中，可以在保证第一基板1的支撑强度的情况下，选择由导热性好的金属铜、银或铜和银的混合物组成第一基板1，以提高导热效率。\n\n[0047]第二基板2设置在第一基板1和液晶分子层3之间，第二基板2是由机械强度良好且导热效果较好的材料形成。为了提高散热结构10的散热效率，可以采用导热强度大于第一基板1的导热强度的材料制作形成第二基板2。即第二基板2的导热强度大于第一基板1的导热强度。第二基板2可以是由导热性好的金属铜、银或铜和银的混合物组成，导热性能好。\n\n[0048]需要说明的是，第一基板1和第二基板2的具体由哪种材料制成可以根据实际需要进行选择，只需保证第一基板1具有支撑能力、第二基板2具有导热能力即可。例如，第一基板1和第二基板2可以采用同一种材料制成，诸如均采用金属铜，在保证支撑散热结构10的其他结构时，增加散热结构10的散热效率；或者第一基板1和第二基板2也可以采用不同的材料制成，诸如第一基板1可以采用金属铝制作形成，第二基板2可以采用金属铜制作形成，在保证散热结构10的散热效率时，提高支撑散热结构10的其他结构的支撑能力。\n\n[0049]将LED芯片6上的热量通过液晶分子层3上的长脂肪链302导入到第二基板2上，再通过第二基板2将热量导出至第一基板1。且第二基板2的导热性能好，可以将LED芯片6上的热量快速导出，提高了导热效率。\n\n[0050]需要说明的是，液晶分子30中的长脂肪链302与第二基板2之间的夹角在0度至180度之间，例如液晶分子30中的长脂肪链302与第二基板2之间的夹角可以是89度、87度、88度的等等。液晶分子30中的长脂肪链302与第二基板2之间存在一定角度的设计有利于纵向传递热量，使得散热效果更好。\n\n[0051]铜膜层4设置在液晶分子30远离第二基板2的一侧，铜膜层4为导电性能较好的比较薄的敷铜膜，即第二基板2的厚度比铜膜层4的厚度大。铜膜层4的导电性能比第一基板1好，铜膜层4可以提升导热性能，将LED芯片6上的热量快速导出，提高了导热效率。具体的，将LED芯片6上的热量通过铜膜层4导入到液晶分子层3上，然后通过液晶分子层3上的长脂肪链302导入到第二基板2上，通过第二基板2将热量导出。\n\n[0052]需要说明的是，铜膜层4平整的敷铜面为电路的印刷和LED芯片6的贴封提供了良好的基底。\n\n[0053]其中，散热结构10的具体结构可以根据需要进行选择，只需要保证能将LED芯片6中的热量导出即可，在此不做具体的规定。具体的，在一些实施例中，散热结构10由第一基板1和液晶分子层3组成。在一些实施例中，散热结构10由第一基板1、液晶分子层3和第二基板2组成。在其他一些实施例中，散热结构10由第一基板1、液晶分子层3、第二基板2和铜膜层4组成。\n\n[0054]液晶显示装置100还包括印刷电路板5，印刷电路板5设置在铜膜层4远离液晶分子层3的一侧，且与LED芯片6电连接。\n\n[0055]结合图4和图5，图4为本申请实施例提供的液晶显示装置的散热结构的第一种结构示意图，图5为本申请实施例提供的液晶显示装置中散热结构的第二种结构示意图。在本实施例中以散热结构10中的液晶分子30是六苯并蔻的衍生物中的一种为例进行说明。具体的，液晶分子30包括六苯并蔻，以及在六苯并蔻四周形成的长脂肪链302。\n\n[0056]散热结构10中的多个液晶分子30在液晶分子层3上的排列方式不限制，多个液晶分子30在液晶分子层3上可以是多个液晶分子30不规则的排列，多个液晶分子30在液晶分子层3上也可以是呈阵列排布设置。具体的，多个液晶分子30在液晶分子层3形成M个液晶分子30行和N个液晶分子30列。其中，M为大于或等于一的整数，N大于或等于一的整数。多个液晶分子30行和多个液晶分子30列相互交叉形成液晶分子层3。\n\n[0057]示例性的，当多个液晶分子30在液晶分子层3上呈阵列排布设置时，M为等于1，N为大于或等于1的整数时，每个液晶分子30的多个长脂肪链302连接LED芯片6，将LED芯片6中的热量通过长脂肪链302导出到第一基板1上。\n\n[0058]在其他一些实施例中，M为大于或等于1的整数，N为等于1时，相邻的液晶分子30之间的脂肪链302依次抵接或在一定的预设范围内间隔设置，通过相邻的液晶分子30之间单向传递热量，使得LED芯片6中的热量通过长脂肪链302更加快速的导出到第一基板1上。\n\n[0059]请继续参阅图6至图7，图6为本申请实施例提供的液晶显示装置的制作方法的第一种流程示意图，图7为本申请实施例提供的与图6所示的液晶显示装置的制作方法的各步骤对应的示意图。本实施例还提供一种液晶显示装置100的制备方法。具体步骤如下：\n\n[0060]101、提供第一基板。\n\n[0061]第一基板1可以是由具有一定机械强度的金属铝背板组成，用于支撑底座和散热。第一基板1也可以是由导热性好的金属铜、银或铜和银的混合物组成，提高导热效率。\n\n[0062]102、在第一基板上涂抹第一材料形成第二基板。\n\n[0063]在第一基板1的表面通过喷涂或者真空蒸镀技术制备高导热效率的第二基板2。第二基板2是由机械强度良好且导热效果较好的材料形成。第二基板2可以是由导热性好的金属铜、银或铜和银的混合物组成。具体的，涂抹的第一材料可以是银材料或者是铜材料。\n\n[0064]103、在第二基板上涂抹液晶分子形成液晶分子层。\n\n[0065]在第二基板2上通过喷涂或者刮涂液晶分子30，形成液晶分子层3。液晶分子30可以是六苯并蔻的衍生物中的一种，液晶分子30可以是多种六苯并蔻的衍生物中的组合。\n\n[0066]多个液晶分子30在液晶分子层3上的排列方式不限制，多个液晶分子30在液晶分子层3上可以是多个液晶分子30不规则的排列，多个液晶分子30在液晶分子层3上也可以是呈阵列排布设置。具体的，多个液晶分子30在液晶分子层3上形成M个液晶分子30行和N个液晶分子30列。其中，M为大于或等于一的整数，N大于或等于一的整数。多个液晶分子30行和多个液晶分子30列相互交叉形成液晶分子层3。\n\n[0067]104、运用趋向滚轮将液晶分子层中的长脂肪链进行趋向处理形成导热膜层。\n\n[0068]运用趋向滚轮将液晶分子层3中的长脂肪链302进行趋向处理，形成导热膜层。导热膜层中不同液晶分子30的不同长脂肪链302均朝同一方向排列设置。\n\n[0069]请继续参阅图8至图9，图8为本申请实施例提供的液晶显示装置的制作方法的第二种流程示意图，图9为本申请实施例提供的与图8所示的液晶显示装置的制作方法的各步骤对应的示意图。本实施例还提供一种液晶显示装置100的制备方法。具体步骤如下：\n\n[0070]201、提供第一基板。\n\n[0071]详细情况见步骤101，在此不再赘述。\n\n[0072]202、在第一基板上涂抹第一材料形成第二基板。\n\n[0073]详细情况见步骤102，在此不再赘述。\n\n[0074]203、在第二基板上涂抹液晶分子形成液晶分子层。\n\n[0075]详细情况见步骤103，在此不再赘述。\n\n[0076]204、运用趋向滚轮将液晶分子层中的长脂肪链进行趋向处理形成导热膜层。\n\n[0077]详细情况见步骤104，在此不再赘述。\n\n[0078]205、在导热膜层上涂抹铜材料，形成铜膜层。\n\n[0079]通过真空蒸镀技术在导热膜层上制备几百个纳米的铜膜，形成铜膜层4。铜膜层4的导电性比第一基板1好，铜膜层4的厚度比第二基板2的厚度小。铜膜层4用于导电，将LED芯片6上的热量导出。需要说明的是，铜膜层4平整的敷铜面为电路的印刷和LED芯片6的贴封提供了良好的基底。\n\n[0080]206、在铜膜层上通过焊接或胶粘的方式制备印刷电路板。\n\n[0081]在铜膜层4上制备印刷电路板5，可以通过焊接或胶粘的方式。印刷电路板5是电子元器件的支撑体，是电子元器件电气连接的载体。\n\n[0082]207、在印刷电路板上通过焊接方式制备LED芯片。\n\n[0083]在印刷电路板5上通过焊接方式制备LED芯片6，最后对MicroLED芯片6进行贴封。\n\n[0084]本申请实施例提供的液晶显示装置100，可以通过导热膜层中不同液晶分子30的不同长脂肪链302均朝同一方向排列设置，将LED芯片6中的热量通过铜膜层4和液晶分子30层导向第二基板2和第一基板1。从而将LED芯片6中的热量快速导出，进而提高MicroLED显示器的散热效果。而现有技术中采用热电制冷器件对LED进行散热，由于MicroLED显示器体积较小，故所需要的热电制冷器件也必然更小，这对热电制冷器件的制作提出了更高的要求，使得加工精度要求更高。而本实施例中通过在液晶分子层上运用趋向滚轮，对液晶分子中的长脂肪链进行趋向处理形成导热膜层，就可以将LED芯片6中的热量通过铜膜层4和液晶分子30层导出。相较于现有技术，本实施例提供的散热结构10的加工工艺更加简单、方便，进而加工成本也会降低。\n\n[0085]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0086]以上对本申请实施例所提供的液晶显示装置及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请属于电子设备技术领域，尤其涉及一种液晶显示装置及其制备方法。\n\n背景技术\n\n[0002]微米LED(Micro LED)是新一代显示技术，比现有的OLED技术亮度更高、发光效率更好、但功耗更低。2017年5月，苹果已经开始相关显示技术的开发，同时2018年2月，三星在CES 2018上推出了Micro LED电视。众所周知，传统液晶电视的面板是不会发光的，它需要让LED背光层发射的光线穿过量子点层、色彩滤镜和其他多个面板层来产生图像。而OLED面板上的像素可独立发出光线和色彩，因此每个像素可以单独开启或关闭，从而实现绝对的黑色水平和无限的对比度。\n\n[0003]MicroLED在新一代显示领域拥有非常大的潜力，但是其本质依然是LED的自发光，因此目前Micro-LED仍具有散热差的问题，散热差会导致器件温度过高、寿命下降。\n\n[0004]因此需针对Micro-LED散热差的问题进行进一步的研究。\n\n发明内容\n\n[0005]本申请实施例提供一种液晶显示装置及其制备方法，以改善现有技术中Micro-LED散热差的问题。\n\n[0006]本申请实施例提供一种液晶显示装置，所述液晶显示装置包括：\n\n[0007]LED芯片；\n\n[0008]散热结构，所述散热结构与所述LED芯片连接，所述散热结构包括液晶分子层，所述液晶分子层包括多个液晶分子，每一所述液晶分子具有多个长脂肪链，不同所述液晶分子的多个长脂肪链均朝同一方向排列设置。\n\n[0009]可选的，多个所述液晶分子呈阵列排布设置，在所述液晶分子层上形成M个液晶分子行和N个液晶分子列。\n\n[0010]可选的，所述散热结构包括：\n\n[0011]第一基板，所述第一基板设置在所述液晶分子层的一侧；\n\n[0012]第二基板，所述第二基板设置在所述第一基板和所述液晶分子层之间；以及\n\n[0013]铜膜层，所述铜膜层设置在所述液晶分子层远离所述第二基板的一侧。\n\n[0014]可选的，所述长脂肪链与所述第二基板倾斜设置。\n\n[0015]可选的，所述第二基板的厚度大于所述铜膜层的厚度，所述第一基板的机械强度大于所述第二基板的机械强度，所述第二基板的导热强度大于所述第一基板的导热强度。\n\n[0016]可选的，所述液晶分子为六苯并蔻的衍生物中的一种或多种的组合。\n\n[0017]可选的，相邻两个所述长脂肪链相互抵接。\n\n[0018]可选的，所述液晶显示装置还包括：\n\n[0019]印刷电路板，所述印刷电路板设置在所述铜膜层远离所述液晶分子层的一侧，且与所述LED芯片电连接。\n\n[0020]本申请实施例还提供一种液晶显示装置的制备方法，所述制备方法包括：\n\n[0021]提供第一基板；\n\n[0022]在所述第一基板上涂抹第一材料形成第二基板；\n\n[0023]在所述第二基板上涂抹液晶分子形成液晶分子层；\n\n[0024]运用趋向滚轮将所述液晶分子层中的长脂肪链进行趋向处理形成导热膜层。\n\n[0025]可选的，所述制备方法还包括：\n\n[0026]在所述导热膜层上涂抹铜材料，形成铜膜层；\n\n[0027]在所述铜膜层上通过焊接或胶粘的方式制备印刷电路板；\n\n[0028]在所述印刷电路板上通过焊接方式制备LED芯片。\n\n[0029]本申请实施例中的液晶显示装置包括LED芯片和与LED芯片连接的散热结构，其中，散热结构包括多个液晶分子，每个液晶分子具有多个长脂肪链，且不同液晶分子的多个长脂肪链均朝同一方向排列设置。本实施例中不同液晶分子中的多个长脂肪链均朝同一方向排列设置，相比于不同液晶分子中的多个长脂肪链向不同方向排列，同一方向的排列的长脂肪链使得传递的热量更集中，进而提高了热量传递效率，改善了现有技术中Micro-LED具有散热差的问题。\n\n附图说明\n\n[0030]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其有益效果显而易见。\n\n[0031]图1为本申请实施例提供的液晶显示装置的第一种结构示意图。\n\n[0032]图2为本申请实施例提供的液晶显示装置的第二种结构示意图。\n\n[0033]图3为本申请实施例提供的液晶显示装置的第三种结构示意图。\n\n[0034]图4为本申请实施例提供的液晶显示装置中散热结构的第一种结构示意图。\n\n[0035]图5为本申请实施例提供的液晶显示装置中散热结构的第二种结构示意图。\n\n[0036]图6为本申请实施例提供的液晶显示装置的制作方法的第一种流程示意图。\n\n[0037]图7为本申请实施例提供的与图6所示的液晶显示装置的制作方法的各步骤对应的示意图。\n\n[0038]图8为本申请实施例提供的液晶显示装置的制作方法的第二种流程示意图。\n\n[0039]图9为本申请实施例提供的与图8所示的液晶显示装置的制作方法的各步骤对应的示意图。\n\n具体实施方式\n\n[0040]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0041]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0042]请参阅图1至图3，图1为本申请实施例提供的液晶显示装置的第一种结构示意图，图2为本申请实施例提供的液晶显示装置的第二种结构示意图，图3为本申请实施例提供的液晶显示装置的第三种结构示意图。本申请实施例提供一种液晶显示装置100，液晶显示装置100包括LED芯片6和散热结构10，散热结构10与LED芯片6连接。其中，散热结构10包括液晶分子层3，液晶分子层3包括多个液晶分子30，每个液晶分子30具有多个长脂肪链302，且不同液晶分子30的不同长脂肪链302均朝同一方向排列设置，可以使得热量从相同的方向传递出去，相比于不同液晶分子中的多个长脂肪链向不同方向排列，同一方向的排列的长脂肪链使得传递的热量更集中，进而提高了热量传递效率，改善了现有技术中Micro-LED具有散热差的问题。\n\n[0043]可以理解的是，每个脂肪链302之间紧密排列，可以使得散热效果更好。在一些实施例中，相邻两个长脂肪链302之间在预设范围之内相互抵接设置，在其他一些实施例中，相邻两个长脂肪链302之间相互间隔设置，可以通过脂肪链302之间单向传递热量将Micro-LED中的热量散去。其中，预设范围可以根据实际应用进行设置，只要可以使得散热结构10的散热效率相对于现有技术的散热效率有所提高即可。\n\n[0044]液晶分子30包括六苯并蔻301，以及在六苯并蔻301四周形成的长脂肪链302。需要说明的是，液晶分子30可以是六苯并蔻301的衍生物中的一种或多种的组合。具体的，液晶分子30可以是六苯并蔻301的衍生物中的一种，液晶分子30可以是多种六苯并蔻301的衍生物中的组合。在此不做具体的规定，只需要满足液晶分子30包括长脂肪链302即可。\n\n[0045]液晶分子30可以是盘状结构的分子也可以是杆状结构的分子，需要说明的是，盘状的液晶分子30膜层薄，导热性更好。在液晶显示装置100中，液晶分子30既可以绝缘，也可以散热。\n\n[0046]散热结构10还包括第一基板1、第二基板2和铜膜层4。第一基板1设置在液晶分子层3的一侧，主要用于支撑散热结构10的其他结构。在一些实施例中，第一基板1可以选择一些一定机械强度的材料制成形成以提高其支撑能力，诸如第一基板1可以采用金属铝材料制成。在其他一些实施例中，可以在保证第一基板1的支撑强度的情况下，选择由导热性好的金属铜、银或铜和银的混合物组成第一基板1，以提高导热效率。\n\n[0047]第二基板2设置在第一基板1和液晶分子层3之间，第二基板2是由机械强度良好且导热效果较好的材料形成。为了提高散热结构10的散热效率，可以采用导热强度大于第一基板1的导热强度的材料制作形成第二基板2。即第二基板2的导热强度大于第一基板1的导热强度。第二基板2可以是由导热性好的金属铜、银或铜和银的混合物组成，导热性能好。\n\n[0048]需要说明的是，第一基板1和第二基板2的具体由哪种材料制成可以根据实际需要进行选择，只需保证第一基板1具有支撑能力、第二基板2具有导热能力即可。例如，第一基板1和第二基板2可以采用同一种材料制成，诸如均采用金属铜，在保证支撑散热结构10的其他结构时，增加散热结构10的散热效率；或者第一基板1和第二基板2也可以采用不同的材料制成，诸如第一基板1可以采用金属铝制作形成，第二基板2可以采用金属铜制作形成，在保证散热结构10的散热效率时，提高支撑散热结构10的其他结构的支撑能力。\n\n[0049]将LED芯片6上的热量通过液晶分子层3上的长脂肪链302导入到第二基板2上，再通过第二基板2将热量导出至第一基板1。且第二基板2的导热性能好，可以将LED芯片6上的热量快速导出，提高了导热效率。\n\n[0050]需要说明的是，液晶分子30中的长脂肪链302与第二基板2之间的夹角在0度至180度之间，例如液晶分子30中的长脂肪链302与第二基板2之间的夹角可以是89度、87度、88度的等等。液晶分子30中的长脂肪链302与第二基板2之间存在一定角度的设计有利于纵向传递热量，使得散热效果更好。\n\n[0051]铜膜层4设置在液晶分子30远离第二基板2的一侧，铜膜层4为导电性能较好的比较薄的敷铜膜，即第二基板2的厚度比铜膜层4的厚度大。铜膜层4的导电性能比第一基板1好，铜膜层4可以提升导热性能，将LED芯片6上的热量快速导出，提高了导热效率。具体的，将LED芯片6上的热量通过铜膜层4导入到液晶分子层3上，然后通过液晶分子层3上的长脂肪链302导入到第二基板2上，通过第二基板2将热量导出。\n\n[0052]需要说明的是，铜膜层4平整的敷铜面为电路的印刷和LED芯片6的贴封提供了良好的基底。\n\n[0053]其中，散热结构10的具体结构可以根据需要进行选择，只需要保证能将LED芯片6中的热量导出即可，在此不做具体的规定。具体的，在一些实施例中，散热结构10由第一基板1和液晶分子层3组成。在一些实施例中，散热结构10由第一基板1、液晶分子层3和第二基板2组成。在其他一些实施例中，散热结构10由第一基板1、液晶分子层3、第二基板2和铜膜层4组成。\n\n[0054]液晶显示装置100还包括印刷电路板5，印刷电路板5设置在铜膜层4远离液晶分子层3的一侧，且与LED芯片6电连接。\n\n[0055]结合图4和图5，图4为本申请实施例提供的液晶显示装置的散热结构的第一种结构示意图，图5为本申请实施例提供的液晶显示装置中散热结构的第二种结构示意图。在本实施例中以散热结构10中的液晶分子30是六苯并蔻的衍生物中的一种为例进行说明。具体的，液晶分子30包括六苯并蔻，以及在六苯并蔻四周形成的长脂肪链302。\n\n[0056]散热结构10中的多个液晶分子30在液晶分子层3上的排列方式不限制，多个液晶分子30在液晶分子层3上可以是多个液晶分子30不规则的排列，多个液晶分子30在液晶分子层3上也可以是呈阵列排布设置。具体的，多个液晶分子30在液晶分子层3形成M个液晶分子30行和N个液晶分子30列。其中，M为大于或等于一的整数，N大于或等于一的整数。多个液晶分子30行和多个液晶分子30列相互交叉形成液晶分子层3。\n\n[0057]示例性的，当多个液晶分子30在液晶分子层3上呈阵列排布设置时，M为等于1，N为大于或等于1的整数时，每个液晶分子30的多个长脂肪链302连接LED芯片6，将LED芯片6中的热量通过长脂肪链302导出到第一基板1上。\n\n[0058]在其他一些实施例中，M为大于或等于1的整数，N为等于1时，相邻的液晶分子30之间的脂肪链302依次抵接或在一定的预设范围内间隔设置，通过相邻的液晶分子30之间单向传递热量，使得LED芯片6中的热量通过长脂肪链302更加快速的导出到第一基板1上。\n\n[0059]请继续参阅图6至图7，图6为本申请实施例提供的液晶显示装置的制作方法的第一种流程示意图，图7为本申请实施例提供的与图6所示的液晶显示装置的制作方法的各步骤对应的示意图。本实施例还提供一种液晶显示装置100的制备方法。具体步骤如下：\n\n[0060]101、提供第一基板。\n\n[0061]第一基板1可以是由具有一定机械强度的金属铝背板组成，用于支撑底座和散热。第一基板1也可以是由导热性好的金属铜、银或铜和银的混合物组成，提高导热效率。\n\n[0062]102、在第一基板上涂抹第一材料形成第二基板。\n\n[0063]在第一基板1的表面通过喷涂或者真空蒸镀技术制备高导热效率的第二基板2。第二基板2是由机械强度良好且导热效果较好的材料形成。第二基板2可以是由导热性好的金属铜、银或铜和银的混合物组成。具体的，涂抹的第一材料可以是银材料或者是铜材料。\n\n[0064]103、在第二基板上涂抹液晶分子形成液晶分子层。\n\n[0065]在第二基板2上通过喷涂或者刮涂液晶分子30，形成液晶分子层3。液晶分子30可以是六苯并蔻的衍生物中的一种，液晶分子30可以是多种六苯并蔻的衍生物中的组合。\n\n[0066]多个液晶分子30在液晶分子层3上的排列方式不限制，多个液晶分子30在液晶分子层3上可以是多个液晶分子30不规则的排列，多个液晶分子30在液晶分子层3上也可以是呈阵列排布设置。具体的，多个液晶分子30在液晶分子层3上形成M个液晶分子30行和N个液晶分子30列。其中，M为大于或等于一的整数，N大于或等于一的整数。多个液晶分子30行和多个液晶分子30列相互交叉形成液晶分子层3。\n\n[0067]104、运用趋向滚轮将液晶分子层中的长脂肪链进行趋向处理形成导热膜层。\n\n[0068]运用趋向滚轮将液晶分子层3中的长脂肪链302进行趋向处理，形成导热膜层。导热膜层中不同液晶分子30的不同长脂肪链302均朝同一方向排列设置。\n\n[0069]请继续参阅图8至图9，图8为本申请实施例提供的液晶显示装置的制作方法的第二种流程示意图，图9为本申请实施例提供的与图8所示的液晶显示装置的制作方法的各步骤对应的示意图。本实施例还提供一种液晶显示装置100的制备方法。具体步骤如下：\n\n[0070]201、提供第一基板。\n\n[0071]详细情况见步骤101，在此不再赘述。\n\n[0072]202、在第一基板上涂抹第一材料形成第二基板。\n\n[0073]详细情况见步骤102，在此不再赘述。\n\n[0074]203、在第二基板上涂抹液晶分子形成液晶分子层。\n\n[0075]详细情况见步骤103，在此不再赘述。\n\n[0076]204、运用趋向滚轮将液晶分子层中的长脂肪链进行趋向处理形成导热膜层。\n\n[0077]详细情况见步骤104，在此不再赘述。\n\n[0078]205、在导热膜层上涂抹铜材料，形成铜膜层。\n\n[0079]通过真空蒸镀技术在导热膜层上制备几百个纳米的铜膜，形成铜膜层4。铜膜层4的导电性比第一基板1好，铜膜层4的厚度比第二基板2的厚度小。铜膜层4用于导电，将LED芯片6上的热量导出。需要说明的是，铜膜层4平整的敷铜面为电路的印刷和LED芯片6的贴封提供了良好的基底。\n\n[0080]206、在铜膜层上通过焊接或胶粘的方式制备印刷电路板。\n\n[0081]在铜膜层4上制备印刷电路板5，可以通过焊接或胶粘的方式。印刷电路板5是电子元器件的支撑体，是电子元器件电气连接的载体。\n\n[0082]207、在印刷电路板上通过焊接方式制备LED芯片。\n\n[0083]在印刷电路板5上通过焊接方式制备LED芯片6，最后对MicroLED芯片6进行贴封。\n\n[0084]本申请实施例提供的液晶显示装置100，可以通过导热膜层中不同液晶分子30的不同长脂肪链302均朝同一方向排列设置，将LED芯片6中的热量通过铜膜层4和液晶分子30层导向第二基板2和第一基板1。从而将LED芯片6中的热量快速导出，进而提高MicroLED显示器的散热效果。而现有技术中采用热电制冷器件对LED进行散热，由于MicroLED显示器体积较小，故所需要的热电制冷器件也必然更小，这对热电制冷器件的制作提出了更高的要求，使得加工精度要求更高。而本实施例中通过在液晶分子层上运用趋向滚轮，对液晶分子中的长脂肪链进行趋向处理形成导热膜层，就可以将LED芯片6中的热量通过铜膜层4和液晶分子30层导出。相较于现有技术，本实施例提供的散热结构10的加工工艺更加简单、方便，进而加工成本也会降低。\n\n[0085]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0086]以上对本申请实施例所提供的液晶显示装置及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10942, 23996, '技术领域\n\n[0001]本发明涉及显示技术领域，特别涉及一种微型LED显示面板。\n\n背景技术\n\n[0002]随着高清晰度显示面板对画质的要求越来越高，提升高阶分辨率显示画质成为一个新需求。目前8K OLED受限于补偿电路，OLED和双层液晶面板在功耗上有优势，非晶硅背板技术和驱动设计还存在缺陷，尚需进一步开发，而Micro-Led/Mini-Led技术作为一个全新的显示技术，具有高良率、高可靠性、柔韧性高、体积小、寿命长等优势，在显示领域的应用越来越广泛，有望满足高阶分辨率显示画质的需求。\n\n[0003]Micro-Led/Mini-Led技术为LED微缩化和矩阵化技术，指的是在一个芯片上集成高密度、微小尺寸的LED阵列的技术，以将像素点的距离从毫米级降低至微米级，甚至是纳米级。具体地，阵列基板上设置有多个LED芯片，由于阵列基板上排布的LED芯片的芯片数量巨大，每个LED芯片的引脚与阵列基板上焊盘之间采用表面点焊连接，可单独控制。LED芯片的尺寸在微米级别上，LED芯片与LED芯片之间的间距也比较小，导致微型LED芯片的引脚与焊盘的接触面积越来越小，在垂直方向上，微型LED芯片推拉力越来越低，容易造成Mini-LED/Micro-LED芯片脱落，严重影响Mini-LED/Micro-LED显示面板的品质。\n\n[0004]因此，需要提出一种新型的微型LED显示面板，以解决上述技术问题中的微型LED芯片的引脚与焊盘的接触面积越来越小，微型LED芯片能承受推拉力较小，在微型LED显示面板翻转或倾斜时，容易造成Mini-LED/Micro-LED芯片出现脱落现象，严重影响Mini-LED/Micro-LED显示面板的显示品质的技术问题。\n\n发明内容\n\n[0005]本发明提供一种微型LED显示面板，能够解决现有技术中的的微型LED芯片的引脚与焊盘的接触面积越来越小，微型LED芯片能承受推拉力较小，在微型LED显示面板翻转或倾斜时，容易造成Mini-LED/Micro-LED出现掉灯现象，严重影响Mini-LED/Micro-LED显示面板的显示品质的技术问题。\n\n[0006]本发明提供的技术方案如下：\n\n[0007]本发明实施例提供一种微型LED显示面板，该微型LED显示面板包括驱动电路层和位于所述驱动电路层之上的微型LED芯片，其中，所述微型LED芯片的引脚具有至少一非垂直面，所述驱动电路层表面的焊盘具有与所述非垂直面相配合的互补面，所述引脚与所述焊盘相互嵌套设置。\n\n[0008]根据本发明一优选实施例，所述引脚围绕所述所述焊盘设置，所述焊盘位于所述引脚内侧，且所述焊盘的互补面与所述引脚的非垂直面通过相互贴合电性连接。\n\n[0009]根据本发明一优选实施例，所述引脚包括相对设置的第一楔形结构和第二楔形结构，所述焊盘包括背离设置第一半斜圆柱状结构和第二半斜圆柱状结构，所述第一楔形结构与所述第一半斜圆柱状结构电性连接，所述第二楔形结构与所述第二半斜圆柱状结构电性连接。\n\n[0010]其中，所述第一楔形结构和所述第二楔形结构形成一个环形结构，所述环形结构在所述第一楔形结构和所述第二楔形结构靠近的位置形成有豁口，所述第一半斜圆柱状结构与所述第二半斜圆柱状结构之间设置有间隙，若所述第一半斜圆柱状结构与所述第二半斜圆柱状结构合拢可形成一个完整的斜圆柱体。\n\n[0011]根据本发明一优选实施例，所述第一楔形结构与所述第一半斜圆柱状结构电性连接面分别为所述非垂直面和所述互补面，所述第二楔形结构与所述第二半斜圆柱状结构电性连接面分别也为所述非垂直面和所述互补面。\n\n[0012]根据本发明一优选实施例，所述非垂直面为凹陷的斜曲面，所述互补面为与所述凹陷的斜曲面相匹配的凸起的斜曲面，相贴合的凹陷的斜曲面和凸起的斜曲面的曲率和面积相等。\n\n[0013]根据本发明一优选实施例，所述第一楔形结构和所述第二楔形结构的截面形状均为直角梯形或直角三角形，所述第一半斜圆柱状结构和所述第二半斜圆柱状结构的截面形状均为直角梯形或直角三角形。\n\n[0014]根据本发明一优选实施例，所述第一楔形结构为所述微型LED芯片的阳极绑定端，所述第二楔形结构为所述微型LED芯片的阴极绑定端。\n\n[0015]根据本发明一优选实施例，所述引脚和所述焊盘为相同金属材料制备而成，所述金属材料为铜、钼、钛或铝中一种或一种以上材料。\n\n[0016]其中，所述引脚和所述焊盘采用点焊结合在一起，焊接完成后，所述引脚和所述焊盘呈一体结构，在焊接面上形成有合金层，所述合金层至少包括锡膏。\n\n[0017]根据本发明一优选实施例，所述引脚边缘超过所述焊盘，并且延伸至所述焊盘内，在所述引脚的非垂直面与所述焊盘的互补面的嵌套上，所述互补面朝向所述非垂直面设置有多个开口，所述非垂直面朝向所述互补面设有多个与所述开口一一对应且嵌合的凸齿。\n\n[0018]根据本发明一优选实施例，所述驱动电路层为有源选址驱动电路层或无源选址驱动电路层，且所述微型LED芯片为Micro-Led芯片和/或Mini-Led芯片。\n\n[0019]本发明的有益效果：本发明实施例提供一种微型LED显示面板，该微型LED显示面板包括驱动电路层和位于驱动电路层之上的微型LED芯片，其中，微型LED芯片的引脚具有至少一非垂直面，驱动电路层表面的焊盘具有与非垂直面相配合的互补面，引脚与焊盘相互嵌套设置，非垂直面为凹陷的斜曲面，互补面为与凹陷的斜曲面相匹配的凸起的斜曲面，引脚与焊盘之间通过斜曲面完美匹配，这种设计可以增大微型LED芯片与驱动电路层表面的焊盘的接触面积，从而提高微型LED芯片可推拉力，确保微型LED芯片在微型LED显示面板翻转或倾斜时不会轻易脱离基板，间接提高微型Mini-LED显示面板的显示的稳定性和显示品质。本实施例的微型LED芯片为Micro-Led芯片和/或Mini-Led芯片，微型LED芯片引脚与焊盘采用锡焊电性连接，焊接完成后，引脚和焊盘呈一体结构，在焊接面上形成有合金层，合金层至少包括锡膏与焊盘表面的金属材料，进一步提高引脚和焊盘之间的粘结力。\n\n附图说明\n\n[0020]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0021]图1至3为现有技术中的Mini-LED/Micro-LED显示面板的制备工艺流程中结构示意图。\n\n[0022]图4为现有技术的Mini-LED/Micro-LED显示面板的引脚和焊盘的立体结构示意图。\n\n[0023]图5-7为本发明提供一种微型LED显示面板的制备工艺流程中结构示意图。\n\n[0024]图8为本发明提供一种微型LED显示面板的引脚侧视和俯视结构示意图。\n\n[0025]图9为本发明提供一种微型LED显示面板的引脚与焊盘匹配立体结构示意图。\n\n[0026]图10为本发明提供一种微型LED显示面板的另一种结构示意图。\n\n具体实施方式\n\n[0027]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示，图中虚线表示在结构中并不存在的，仅仅说明结构的形状和位置。\n\n[0028]本发明针对现有技术中的微型LED芯片的引脚与焊盘的接触面积越来越小，微型LED芯片能承受推拉力较小，在微型LED显示面板翻转或倾斜时，容易造成Mini-LED/Micro-LED芯片出现脱落现象，严重影响微型LED显示面板的显示品质的技术问题，本实施例能够解决该缺陷。\n\n[0029]本发明实施例提供一种微型LED显示面板，该微型LED显示面板包括驱动电路层和位于驱动电路层之上的微型LED芯片，其中，微型LED芯片的引脚具有至少一非垂直面，驱动电路层表面的焊盘具有与非垂直面相配合的互补面，引脚与焊盘相互嵌套设置，非垂直面为凹陷的斜曲面，互补面为与凹陷的斜曲面相匹配的凸起的斜曲面，引脚与焊盘之间通过斜曲面完美匹配，这种设计可以增大微型LED芯片与驱动电路层表面的焊盘的接触面积，从而提高微型LED芯片可推拉力，确保微型LED芯片在微型LED显示面板翻转或倾斜时不会轻易脱离基板，间接提高微型Mini-LED显示面板的显示的稳定性和显示品质。本实施例的微型LED芯片为Micro-Led芯片和/或Mini-Led芯片，微型LED芯片引脚与焊盘采用锡焊电性连接，焊接完成后，引脚和焊盘呈一体结构，在焊接面上形成有合金层，合金层至少包括锡膏与焊盘表面的金属材料，进一步提高引脚和焊盘之间的粘结力。\n\n[0030]图1至图3为现有技术中的Mini-LED/Micro-LED显示面板的制备工艺流程中结构示意图。如图1所示，提供一阵列基板11，在该阵列基板11上依次制备焊盘12和焊盘13，其中，焊盘12和焊盘13分别用于输出不同电压的电性号。如图2所示，批量生产的微型LED芯片18采用巨量转移方法贴合于阵列基板11上，微型LED芯片18的引脚16和引脚17分别与焊盘12和焊盘13对位设置，且引脚16与焊盘12之间设置有锡焊层14，引脚17与焊盘13之间设置有锡焊层17。如图3所示，过回流焊后，锡膏层与金属焊盘形成合金层，例如合金层20和合金层22；引脚与焊盘形成一体结构，例如原本的引脚16与焊盘12形成一体结构19，原本的引脚17与焊盘13形成一体结构21，且原本的引脚16与焊盘12之间形成有合金层20，原本的引脚17与焊盘13之间形成有合金层22。\n\n[0031]由于Mini LED/Micro LED芯片的尺寸以及各微型LED之间的间距不断缩小，再加上引脚与焊盘的形状均正方体，该正方体参考图4。在焊接后，二者以面与面相互结合，在垂直于显示面板的厚度方向上，LED芯片与焊盘的接触面积变小，推拉力降低，导致LED芯片易脱落的问题。\n\n[0032]为了解决上述技术问题，本发明在制备Mini-LED/Micro-LED显示面板的过程中，对微型LED显示面板的引脚和焊盘的结构进行了改进，将微型LED芯片的引脚制备成环形楔形结构，驱动电路层对应环形楔形引脚设置有相匹配的斜圆柱形的焊盘，以使在垂直于显示面板的厚度方向上，LED芯片的引脚与焊盘采用斜曲面相互嵌合，一是在垂直方向上，二者存在相互抵触挤压的现象，二者增加了接触面积，即增加推拉力，可解决微型LED芯片易脱落的问题。\n\n[0033]图5至图7为本发明实施例中的微型(Mini-LED/Micro-LED)显示面板的制备工艺流程中结构示意图。如图5所示，提供一驱动电路层101，驱动电路层101为有源选址驱动电路层或无源选址驱动电路层，为Mini-LED/Micro-LED提供驱动信号，驱动电路层101表面设置有焊盘102，每个焊盘102包括背离设置第一半斜圆柱状结构1021和第二半斜圆柱状结构1022，第一半斜圆柱状结构1021具有互补面10211，第二半斜圆柱状结构1022具有互补面10221，第一半斜圆柱状结构1021和第二半斜圆柱状结构1022之间设置有间隙1023。\n\n[0034]特别说明一下，无源选址驱动模式把阵列中每一列的LED像素的阳极(P-electrode)连接到列扫描线(Data Current Source)，同时把每一行的LED像素的阴极(N-electrode)连接到行扫描线(Scan Line)。当某一特定的第Y列扫描线和第X行扫描线被选通的时候，其交叉点(X，Y)的LED像素即会被点亮，整个屏幕以这种方式进行高速逐点扫描即可实现显示画面。在有源选址驱动电路中，每个微型LED像素有其对应的独立驱动电路，驱动电流由驱动晶体管提供，一般有源矩阵驱动电路至少包括双晶体管和单电容电路，每个像素电路中使用至少两个晶体管来控制输出电流，T1为选通晶体管，用来控制像素电路的开或关，T2是驱动个晶体管，与电压源联通并在一帧的时间内为微型LED提供稳定的电流，该电路中还有一个存储电容C1来储存数据信号(Vdata)，当该像素单元的扫描信号脉冲结束后，存储电容仍能保持驱动晶体管T2栅极的电压，从而为Micro-LED像素源源不断的驱动电流，直到一帧结束。\n\n[0035]如图6所示，将自带锡膏的LED芯片103转移到驱动电路层101上，微型LED芯片103优选为Micro-Led芯片和/或Mini-Led芯片。任意一个微型LED芯片103的引脚104具有至少一非垂直面，驱动电路层101表面的焊盘102具有与非垂直面相配合的互补面，引脚104与焊盘102相互嵌套设置。具体地，引脚104包括相对设置的第一楔形结构1041和第二楔形结构1042，第一楔形结构1041具有非垂直面10411，第二楔形结构1042具有非垂直面10421，第一半斜圆柱状结构1021对应非垂直面10411设置有互补面10211，第二半斜圆柱状结构1022对应非垂直面10421设置有互补面10221。\n\n[0036]如图7和图8(a)所示，微型LED芯片103的引脚104与驱动电路层101上的焊盘102相互嵌套设置，引脚104围绕焊盘102设置，焊盘102位于引脚104内侧，且焊盘的互补面与引脚的非垂直面通过相互贴合电性连接。引脚104与微型LED芯片103之间还设置有连接板1043，引脚104包括相对设置的第一楔形结构1041和第二楔形结构1042，焊盘102包括背离设置第一半斜圆柱状结构1021和第二半斜圆柱状结构1022，第一楔形结构1041与第一半斜圆柱状结构1021电性连接，第二楔形结构1042与第二半斜圆柱状结构1022电性连接。\n\n[0037]如图8所示，第一楔形结构1041和第二楔形结构1042形成一个环形结构，环形结构在第一楔形结构1041和第二楔形结构1042靠近的位置形成有豁口，第一半斜圆柱状结构1021与第二半斜圆柱状结构1022间隔设置，若第一半斜圆柱状结构1021与第二半斜圆柱状结构1022合拢可形成一个完整的斜圆柱体。\n\n[0038]如图8(b)所示，第一楔形结构1041与第一半斜圆柱状结构1021电性连接面分别为非垂直面10411和互补面10211，第二楔形结构1042与第二半斜圆柱状结构1022电性连接面分别也为非垂直面10421和互补面10221。非垂直面为凹陷的斜曲面，互补面为与凹陷的斜曲面相匹配的凸起的斜曲面，相贴合的凹陷的斜曲面和凸起的斜曲面的曲率和面积相等。\n\n[0039]第一楔形结构1041和第二楔形结构1042的截面形状均为直角梯形或直角三角形，第一半斜圆柱状结构1021和第二半斜圆柱状结构1022的截面形状均为直角梯形或直角三角形。\n\n[0040]本实施例中第一楔形结构1041为微型LED芯片103的阳极绑定端，第二楔形结构1042为微型LED芯片103的阴极绑定端。第一半斜圆柱状结构1021为阳极绑定端提供正电位信号，第二半斜圆柱状结构1022为阴极绑定端提供负电位信号。本实施例的引脚104和焊盘103为相同金属材料制备而成，金属材料为铜、钼、钛或铝中一种或一种以上材料，其中，引脚104和焊盘102采用点焊结合在一起，焊接完成后，引脚和焊盘呈一体结构，在焊接面上形成有合金层，例如合金层1024和合金层1025，合金层1024和合金层1025至少包括锡膏。\n\n[0041]如图9所示，本发明提供一种微型LED显示面板的引脚与焊盘匹配立体结构示意图。本实施的第一楔形结构1041与第一半斜圆柱状结构1021以斜曲面相互匹配，第一楔形结构1041位于第一半斜圆柱状结构1021的外围。\n\n[0042]如图10所示，本发明提供一种微型LED显示面板的另一种结构示意图。引脚104边缘超过焊盘102，并且延伸至焊盘102内，在引脚104的非垂直面与焊盘102的互补面的嵌套上，互补面朝向互补面设置有多个开口，非垂直面朝向互补面设有多个与开口一一对应且嵌合的凸齿，以此增加引脚104与焊盘102之间的咬合力，例如第一楔形结构1041表面的非垂直面10411表面设置有多个凸齿1044，第一半斜圆柱状结构1021表面对应凸齿1044设置有对应的开口(未标记)。这种相互咬合的设计可进一步增大微型LED芯片103与驱动电路层101表面的焊盘102的接触面积，从而提高微型LED芯片103可承受的推拉力，确保微型LED芯片103在微型LED显示面板翻转或倾斜时不会轻易脱离基板，间接提高微型Mini-LED显示面板的显示的稳定性和显示品质。其他的结构跟图7类似，此处不再赘述。\n\n[0043]本发明实施例提供一种微型LED显示面板，该微型LED显示面板包括驱动电路层和位于驱动电路层之上的微型LED芯片，其中，微型LED芯片的引脚具有至少一非垂直面，驱动电路层表面的焊盘具有与非垂直面相配合的互补面，引脚与焊盘相互嵌套设置，非垂直面为凹陷的斜曲面，互补面为与凹陷的斜曲面相匹配的凸起的斜曲面，引脚与焊盘之间通过斜曲面完美匹配，这种设计可以增大微型LED芯片与驱动电路层表面的焊盘的接触面积，从而提高微型LED芯片可推拉力，确保微型LED芯片在微型LED显示面板翻转或倾斜时不会轻易脱离基板，间接提高微型Mini-LED显示面板的显示的稳定性和显示品质。\n\n[0044]综上，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及显示技术领域，特别涉及一种微型LED显示面板。\n\n背景技术\n\n[0002]随着高清晰度显示面板对画质的要求越来越高，提升高阶分辨率显示画质成为一个新需求。目前8K OLED受限于补偿电路，OLED和双层液晶面板在功耗上有优势，非晶硅背板技术和驱动设计还存在缺陷，尚需进一步开发，而Micro-Led/Mini-Led技术作为一个全新的显示技术，具有高良率、高可靠性、柔韧性高、体积小、寿命长等优势，在显示领域的应用越来越广泛，有望满足高阶分辨率显示画质的需求。\n\n[0003]Micro-Led/Mini-Led技术为LED微缩化和矩阵化技术，指的是在一个芯片上集成高密度、微小尺寸的LED阵列的技术，以将像素点的距离从毫米级降低至微米级，甚至是纳米级。具体地，阵列基板上设置有多个LED芯片，由于阵列基板上排布的LED芯片的芯片数量巨大，每个LED芯片的引脚与阵列基板上焊盘之间采用表面点焊连接，可单独控制。LED芯片的尺寸在微米级别上，LED芯片与LED芯片之间的间距也比较小，导致微型LED芯片的引脚与焊盘的接触面积越来越小，在垂直方向上，微型LED芯片推拉力越来越低，容易造成Mini-LED/Micro-LED芯片脱落，严重影响Mini-LED/Micro-LED显示面板的品质。\n\n[0004]因此，需要提出一种新型的微型LED显示面板，以解决上述技术问题中的微型LED芯片的引脚与焊盘的接触面积越来越小，微型LED芯片能承受推拉力较小，在微型LED显示面板翻转或倾斜时，容易造成Mini-LED/Micro-LED芯片出现脱落现象，严重影响Mini-LED/Micro-LED显示面板的显示品质的技术问题。\n\n发明内容\n\n[0005]本发明提供一种微型LED显示面板，能够解决现有技术中的的微型LED芯片的引脚与焊盘的接触面积越来越小，微型LED芯片能承受推拉力较小，在微型LED显示面板翻转或倾斜时，容易造成Mini-LED/Micro-LED出现掉灯现象，严重影响Mini-LED/Micro-LED显示面板的显示品质的技术问题。\n\n[0006]本发明提供的技术方案如下：\n\n[0007]本发明实施例提供一种微型LED显示面板，该微型LED显示面板包括驱动电路层和位于所述驱动电路层之上的微型LED芯片，其中，所述微型LED芯片的引脚具有至少一非垂直面，所述驱动电路层表面的焊盘具有与所述非垂直面相配合的互补面，所述引脚与所述焊盘相互嵌套设置。\n\n[0008]根据本发明一优选实施例，所述引脚围绕所述所述焊盘设置，所述焊盘位于所述引脚内侧，且所述焊盘的互补面与所述引脚的非垂直面通过相互贴合电性连接。\n\n[0009]根据本发明一优选实施例，所述引脚包括相对设置的第一楔形结构和第二楔形结构，所述焊盘包括背离设置第一半斜圆柱状结构和第二半斜圆柱状结构，所述第一楔形结构与所述第一半斜圆柱状结构电性连接，所述第二楔形结构与所述第二半斜圆柱状结构电性连接。\n\n[0010]其中，所述第一楔形结构和所述第二楔形结构形成一个环形结构，所述环形结构在所述第一楔形结构和所述第二楔形结构靠近的位置形成有豁口，所述第一半斜圆柱状结构与所述第二半斜圆柱状结构之间设置有间隙，若所述第一半斜圆柱状结构与所述第二半斜圆柱状结构合拢可形成一个完整的斜圆柱体。\n\n[0011]根据本发明一优选实施例，所述第一楔形结构与所述第一半斜圆柱状结构电性连接面分别为所述非垂直面和所述互补面，所述第二楔形结构与所述第二半斜圆柱状结构电性连接面分别也为所述非垂直面和所述互补面。\n\n[0012]根据本发明一优选实施例，所述非垂直面为凹陷的斜曲面，所述互补面为与所述凹陷的斜曲面相匹配的凸起的斜曲面，相贴合的凹陷的斜曲面和凸起的斜曲面的曲率和面积相等。\n\n[0013]根据本发明一优选实施例，所述第一楔形结构和所述第二楔形结构的截面形状均为直角梯形或直角三角形，所述第一半斜圆柱状结构和所述第二半斜圆柱状结构的截面形状均为直角梯形或直角三角形。\n\n[0014]根据本发明一优选实施例，所述第一楔形结构为所述微型LED芯片的阳极绑定端，所述第二楔形结构为所述微型LED芯片的阴极绑定端。\n\n[0015]根据本发明一优选实施例，所述引脚和所述焊盘为相同金属材料制备而成，所述金属材料为铜、钼、钛或铝中一种或一种以上材料。\n\n[0016]其中，所述引脚和所述焊盘采用点焊结合在一起，焊接完成后，所述引脚和所述焊盘呈一体结构，在焊接面上形成有合金层，所述合金层至少包括锡膏。\n\n[0017]根据本发明一优选实施例，所述引脚边缘超过所述焊盘，并且延伸至所述焊盘内，在所述引脚的非垂直面与所述焊盘的互补面的嵌套上，所述互补面朝向所述非垂直面设置有多个开口，所述非垂直面朝向所述互补面设有多个与所述开口一一对应且嵌合的凸齿。\n\n[0018]根据本发明一优选实施例，所述驱动电路层为有源选址驱动电路层或无源选址驱动电路层，且所述微型LED芯片为Micro-Led芯片和/或Mini-Led芯片。\n\n[0019]本发明的有益效果：本发明实施例提供一种微型LED显示面板，该微型LED显示面板包括驱动电路层和位于驱动电路层之上的微型LED芯片，其中，微型LED芯片的引脚具有至少一非垂直面，驱动电路层表面的焊盘具有与非垂直面相配合的互补面，引脚与焊盘相互嵌套设置，非垂直面为凹陷的斜曲面，互补面为与凹陷的斜曲面相匹配的凸起的斜曲面，引脚与焊盘之间通过斜曲面完美匹配，这种设计可以增大微型LED芯片与驱动电路层表面的焊盘的接触面积，从而提高微型LED芯片可推拉力，确保微型LED芯片在微型LED显示面板翻转或倾斜时不会轻易脱离基板，间接提高微型Mini-LED显示面板的显示的稳定性和显示品质。本实施例的微型LED芯片为Micro-Led芯片和/或Mini-Led芯片，微型LED芯片引脚与焊盘采用锡焊电性连接，焊接完成后，引脚和焊盘呈一体结构，在焊接面上形成有合金层，合金层至少包括锡膏与焊盘表面的金属材料，进一步提高引脚和焊盘之间的粘结力。\n\n附图说明\n\n[0020]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0021]图1至3为现有技术中的Mini-LED/Micro-LED显示面板的制备工艺流程中结构示意图。\n\n[0022]图4为现有技术的Mini-LED/Micro-LED显示面板的引脚和焊盘的立体结构示意图。\n\n[0023]图5-7为本发明提供一种微型LED显示面板的制备工艺流程中结构示意图。\n\n[0024]图8为本发明提供一种微型LED显示面板的引脚侧视和俯视结构示意图。\n\n[0025]图9为本发明提供一种微型LED显示面板的引脚与焊盘匹配立体结构示意图。\n\n[0026]图10为本发明提供一种微型LED显示面板的另一种结构示意图。\n\n具体实施方式\n\n[0027]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示，图中虚线表示在结构中并不存在的，仅仅说明结构的形状和位置。\n\n[0028]本发明针对现有技术中的微型LED芯片的引脚与焊盘的接触面积越来越小，微型LED芯片能承受推拉力较小，在微型LED显示面板翻转或倾斜时，容易造成Mini-LED/Micro-LED芯片出现脱落现象，严重影响微型LED显示面板的显示品质的技术问题，本实施例能够解决该缺陷。\n\n[0029]本发明实施例提供一种微型LED显示面板，该微型LED显示面板包括驱动电路层和位于驱动电路层之上的微型LED芯片，其中，微型LED芯片的引脚具有至少一非垂直面，驱动电路层表面的焊盘具有与非垂直面相配合的互补面，引脚与焊盘相互嵌套设置，非垂直面为凹陷的斜曲面，互补面为与凹陷的斜曲面相匹配的凸起的斜曲面，引脚与焊盘之间通过斜曲面完美匹配，这种设计可以增大微型LED芯片与驱动电路层表面的焊盘的接触面积，从而提高微型LED芯片可推拉力，确保微型LED芯片在微型LED显示面板翻转或倾斜时不会轻易脱离基板，间接提高微型Mini-LED显示面板的显示的稳定性和显示品质。本实施例的微型LED芯片为Micro-Led芯片和/或Mini-Led芯片，微型LED芯片引脚与焊盘采用锡焊电性连接，焊接完成后，引脚和焊盘呈一体结构，在焊接面上形成有合金层，合金层至少包括锡膏与焊盘表面的金属材料，进一步提高引脚和焊盘之间的粘结力。\n\n[0030]图1至图3为现有技术中的Mini-LED/Micro-LED显示面板的制备工艺流程中结构示意图。如图1所示，提供一阵列基板11，在该阵列基板11上依次制备焊盘12和焊盘13，其中，焊盘12和焊盘13分别用于输出不同电压的电性号。如图2所示，批量生产的微型LED芯片18采用巨量转移方法贴合于阵列基板11上，微型LED芯片18的引脚16和引脚17分别与焊盘12和焊盘13对位设置，且引脚16与焊盘12之间设置有锡焊层14，引脚17与焊盘13之间设置有锡焊层17。如图3所示，过回流焊后，锡膏层与金属焊盘形成合金层，例如合金层20和合金层22；引脚与焊盘形成一体结构，例如原本的引脚16与焊盘12形成一体结构19，原本的引脚17与焊盘13形成一体结构21，且原本的引脚16与焊盘12之间形成有合金层20，原本的引脚17与焊盘13之间形成有合金层22。\n\n[0031]由于Mini LED/Micro LED芯片的尺寸以及各微型LED之间的间距不断缩小，再加上引脚与焊盘的形状均正方体，该正方体参考图4。在焊接后，二者以面与面相互结合，在垂直于显示面板的厚度方向上，LED芯片与焊盘的接触面积变小，推拉力降低，导致LED芯片易脱落的问题。\n\n[0032]为了解决上述技术问题，本发明在制备Mini-LED/Micro-LED显示面板的过程中，对微型LED显示面板的引脚和焊盘的结构进行了改进，将微型LED芯片的引脚制备成环形楔形结构，驱动电路层对应环形楔形引脚设置有相匹配的斜圆柱形的焊盘，以使在垂直于显示面板的厚度方向上，LED芯片的引脚与焊盘采用斜曲面相互嵌合，一是在垂直方向上，二者存在相互抵触挤压的现象，二者增加了接触面积，即增加推拉力，可解决微型LED芯片易脱落的问题。\n\n[0033]图5至图7为本发明实施例中的微型(Mini-LED/Micro-LED)显示面板的制备工艺流程中结构示意图。如图5所示，提供一驱动电路层101，驱动电路层101为有源选址驱动电路层或无源选址驱动电路层，为Mini-LED/Micro-LED提供驱动信号，驱动电路层101表面设置有焊盘102，每个焊盘102包括背离设置第一半斜圆柱状结构1021和第二半斜圆柱状结构1022，第一半斜圆柱状结构1021具有互补面10211，第二半斜圆柱状结构1022具有互补面10221，第一半斜圆柱状结构1021和第二半斜圆柱状结构1022之间设置有间隙1023。\n\n[0034]特别说明一下，无源选址驱动模式把阵列中每一列的LED像素的阳极(P-electrode)连接到列扫描线(Data Current Source)，同时把每一行的LED像素的阴极(N-electrode)连接到行扫描线(Scan Line)。当某一特定的第Y列扫描线和第X行扫描线被选通的时候，其交叉点(X，Y)的LED像素即会被点亮，整个屏幕以这种方式进行高速逐点扫描即可实现显示画面。在有源选址驱动电路中，每个微型LED像素有其对应的独立驱动电路，驱动电流由驱动晶体管提供，一般有源矩阵驱动电路至少包括双晶体管和单电容电路，每个像素电路中使用至少两个晶体管来控制输出电流，T1为选通晶体管，用来控制像素电路的开或关，T2是驱动个晶体管，与电压源联通并在一帧的时间内为微型LED提供稳定的电流，该电路中还有一个存储电容C1来储存数据信号(Vdata)，当该像素单元的扫描信号脉冲结束后，存储电容仍能保持驱动晶体管T2栅极的电压，从而为Micro-LED像素源源不断的驱动电流，直到一帧结束。\n\n[0035]如图6所示，将自带锡膏的LED芯片103转移到驱动电路层101上，微型LED芯片103优选为Micro-Led芯片和/或Mini-Led芯片。任意一个微型LED芯片103的引脚104具有至少一非垂直面，驱动电路层101表面的焊盘102具有与非垂直面相配合的互补面，引脚104与焊盘102相互嵌套设置。具体地，引脚104包括相对设置的第一楔形结构1041和第二楔形结构1042，第一楔形结构1041具有非垂直面10411，第二楔形结构1042具有非垂直面10421，第一半斜圆柱状结构1021对应非垂直面10411设置有互补面10211，第二半斜圆柱状结构1022对应非垂直面10421设置有互补面10221。\n\n[0036]如图7和图8(a)所示，微型LED芯片103的引脚104与驱动电路层101上的焊盘102相互嵌套设置，引脚104围绕焊盘102设置，焊盘102位于引脚104内侧，且焊盘的互补面与引脚的非垂直面通过相互贴合电性连接。引脚104与微型LED芯片103之间还设置有连接板1043，引脚104包括相对设置的第一楔形结构1041和第二楔形结构1042，焊盘102包括背离设置第一半斜圆柱状结构1021和第二半斜圆柱状结构1022，第一楔形结构1041与第一半斜圆柱状结构1021电性连接，第二楔形结构1042与第二半斜圆柱状结构1022电性连接。\n\n[0037]如图8所示，第一楔形结构1041和第二楔形结构1042形成一个环形结构，环形结构在第一楔形结构1041和第二楔形结构1042靠近的位置形成有豁口，第一半斜圆柱状结构1021与第二半斜圆柱状结构1022间隔设置，若第一半斜圆柱状结构1021与第二半斜圆柱状结构1022合拢可形成一个完整的斜圆柱体。\n\n[0038]如图8(b)所示，第一楔形结构1041与第一半斜圆柱状结构1021电性连接面分别为非垂直面10411和互补面10211，第二楔形结构1042与第二半斜圆柱状结构1022电性连接面分别也为非垂直面10421和互补面10221。非垂直面为凹陷的斜曲面，互补面为与凹陷的斜曲面相匹配的凸起的斜曲面，相贴合的凹陷的斜曲面和凸起的斜曲面的曲率和面积相等。\n\n[0039]第一楔形结构1041和第二楔形结构1042的截面形状均为直角梯形或直角三角形，第一半斜圆柱状结构1021和第二半斜圆柱状结构1022的截面形状均为直角梯形或直角三角形。\n\n[0040]本实施例中第一楔形结构1041为微型LED芯片103的阳极绑定端，第二楔形结构1042为微型LED芯片103的阴极绑定端。第一半斜圆柱状结构1021为阳极绑定端提供正电位信号，第二半斜圆柱状结构1022为阴极绑定端提供负电位信号。本实施例的引脚104和焊盘103为相同金属材料制备而成，金属材料为铜、钼、钛或铝中一种或一种以上材料，其中，引脚104和焊盘102采用点焊结合在一起，焊接完成后，引脚和焊盘呈一体结构，在焊接面上形成有合金层，例如合金层1024和合金层1025，合金层1024和合金层1025至少包括锡膏。\n\n[0041]如图9所示，本发明提供一种微型LED显示面板的引脚与焊盘匹配立体结构示意图。本实施的第一楔形结构1041与第一半斜圆柱状结构1021以斜曲面相互匹配，第一楔形结构1041位于第一半斜圆柱状结构1021的外围。\n\n[0042]如图10所示，本发明提供一种微型LED显示面板的另一种结构示意图。引脚104边缘超过焊盘102，并且延伸至焊盘102内，在引脚104的非垂直面与焊盘102的互补面的嵌套上，互补面朝向互补面设置有多个开口，非垂直面朝向互补面设有多个与开口一一对应且嵌合的凸齿，以此增加引脚104与焊盘102之间的咬合力，例如第一楔形结构1041表面的非垂直面10411表面设置有多个凸齿1044，第一半斜圆柱状结构1021表面对应凸齿1044设置有对应的开口(未标记)。这种相互咬合的设计可进一步增大微型LED芯片103与驱动电路层101表面的焊盘102的接触面积，从而提高微型LED芯片103可承受的推拉力，确保微型LED芯片103在微型LED显示面板翻转或倾斜时不会轻易脱离基板，间接提高微型Mini-LED显示面板的显示的稳定性和显示品质。其他的结构跟图7类似，此处不再赘述。\n\n[0043]本发明实施例提供一种微型LED显示面板，该微型LED显示面板包括驱动电路层和位于驱动电路层之上的微型LED芯片，其中，微型LED芯片的引脚具有至少一非垂直面，驱动电路层表面的焊盘具有与非垂直面相配合的互补面，引脚与焊盘相互嵌套设置，非垂直面为凹陷的斜曲面，互补面为与凹陷的斜曲面相匹配的凸起的斜曲面，引脚与焊盘之间通过斜曲面完美匹配，这种设计可以增大微型LED芯片与驱动电路层表面的焊盘的接触面积，从而提高微型LED芯片可推拉力，确保微型LED芯片在微型LED显示面板翻转或倾斜时不会轻易脱离基板，间接提高微型Mini-LED显示面板的显示的稳定性和显示品质。\n\n[0044]综上，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10943, 23997, '技术领域\n\n[0001]本发明涉及显示技术领域，特别涉及一种屏下摄像头显示面板及透明显示区域的制备方法。\n\n背景技术\n\n[0002]随着显示面板的快速发展，具有高屏占比的显示面板成为当前发展的趋势，例如全面屏手机依次发展为异形屏、美人尖、挖空屏，这些都是为了提高显示面板的屏占比。由于全面屏手机在出光面一侧设置有前置摄像头，液晶屏属于整面背光的被动发光，前置摄像头与光学显示无法同时在盲孔或通孔上重合，因此限制了液晶屏向全面屏的方向发展。\n\n[0003]为了解决上述问题，面板厂家发现Micro LED显示面板具有超高亮度，高对比度，响应时间快，透明度高，可绕性等物理特点，成为全面屏手机所需显示产品，例如，参考图1中的(a)，在既能正常显示又能保证外界光线穿过屏体情况下，外界光穿过液晶屏11的透过率为10％；参考图1中的(b)，外界光穿过OLED屏12的透过率可达到为50％；参考图1中的(c)，外界光穿过Micro LED屏13的透过率可达到为80％。但是目前Micro LED芯粒的巨量转移技术未有突破，在制备技术上存在巨量转移良率低和效率低的问题，现阶段无法用MicroLED来大尺寸批量化的Micro LED显示器，但小尺寸Micro LED显示屏可以实现，因此利用小尺寸的Micro LED显示屏填补前置摄像头上缺失显示，可实现真正意义上的全面屏，参考图2和图3。\n\n[0004]如图2中的(c)所示，现有技术的全面屏包括液晶显示区20和Micro LED显示区30，液晶显示区20包括背光源21、阵列基板、液晶层25、以及彩膜基板，其中，阵列基板包括第一基板23和位于第一基板23之上的驱动电路层24，彩膜基板包括第二基板26和位于第二基板26之下的色阻层25，阵列基板的背部设置有第一偏光片22，彩膜基板表面设置有第二偏光片27。Micro LED显示区30包括与色阻层同层设置的Micro LED芯片32和位于Micro LED芯片32之上的驱动电路层33，其中，Micro LED芯片32外设置有封装层31，Micro LED显示区30背部还设置有光学传感器34。如图2中的(d)所示，Micro LED芯片32出光面与驱动电路层33之间采用绑定电极35和绑定电极36连接，存在Micro LED芯片32出光被绑定电极遮挡，导致Micro LED显示区30出射光线S1出光面积和视角较小的问题。\n\n[0005]如图3中的(e)所示，图3中的(e)的液晶显示区20跟图2中的(c)相同，Micro LED显示区40包括位于第二基板26表面的驱动电路层41和位于驱动电路层41表面的Micro LED芯片43，Micro LED芯片43外围设置有封装层42，Micro LED显示区40背部还设置有光学传感器44。如图3中的(f)所示，Micro LED芯片43底部与驱动电路层41之间采用绑定电极45和绑定电极46连接，存在液晶显示区20和Micro LED显示区40显示不共面，导致Micro LED显示区40出射光线S2的显示画面悬浮的问题。\n\n[0006]综上所述，现有技术利用Micro LED显示屏与液晶屏叠加形成全面屏后，存在Micro LED显示区出光品质较差的问题，需要改进。\n\n发明内容\n\n[0007]本发明提供一种屏下摄像头显示面板及透明显示区域的制备方法，能够解决现有技术利用Micro LED显示屏与液晶屏叠加形成全面屏后，存在Micro LED显示区出光品质较差的问题。\n\n[0008]本发明提供的技术方案如下：\n\n[0009]本发明实施例提供一种屏下摄像头显示面板，该屏下摄像头显示面板包括显示区域，所述显示区域内至少设置有一用于接受外界光的透明显示区域，所述透明显示区域包括阵列设置的Micro LED像素。\n\n[0010]其中，所述Micro LED像素包括衬底、设于所述衬底背侧的Micro LED驱动电路层、阵列设于所述Micro LED驱动电路层背侧的Micro LED芯片，所述Micro LED芯片的引脚位于所述Micro LED芯片的非出光面上，且所述引脚通过金属走线图案与所述驱动电路层电性连接。\n\n[0011]根据本发明一优选实施例，除所述透明显示区域之外的显示区域包括液晶像素，所述液晶像素的出光面与所述Micro LED像素的出光面平齐。\n\n[0012]其中，所述液晶像素包括阵列基板、与所述阵列基板相对设置的彩膜基板、以及位于所述阵列基板和所述彩膜基板之间的液晶层，所述阵列基板包括基底和位于所述基底之上的液晶驱动电路层，所述彩膜基板包括所述衬底和位于所述衬底背侧的色阻层；所述液晶层、所述基底和所述衬底延伸至所述Micro LED像素内。\n\n[0013]根据本发明一优选实施例，所述Micro LED像素还包括位于所述Micro LED驱动电路层与所述Micro LED芯片之间的钝化层、用于放置所述Micro LED芯片的平坦化层、以及位于所述Micro LED芯片背侧的封装层。\n\n[0014]其中，在所述屏下摄像头显示面板厚度方向上，所述Micro LED驱动电路层、所述钝化层、所述Micro LED芯片、所述平坦化层和所述封装层形成有复合膜层，所述复合膜层与所述色阻层齐平。\n\n[0015]根据本发明一优选实施例，所述Micro LED芯片出光侧与所述钝化层之间设置有高透明粘结层，所述高透明粘结层的材料为光学透明胶或有机硅胶。\n\n[0016]根据本发明一优选实施例，所述引脚包括位于所述出光面相反一侧两端的阳极绑定端和阴极绑定端，所述金属走线图案包括第一金属走线图案和第二金属走线图案，所述Micro LED驱动电路层设置有正电位输出端和负电位输出端。\n\n[0017]所述第一金属走线图案和所述第二金属走线图案的一端分别与所述阳极绑定端和阴极绑定端电性连接，另一端分别与所述正电位输出端和所述负电位输出端电性连接。\n\n[0018]根据本发明一优选实施例，所述第一金属走线图案和所述第二金属走线图案均为L型、U型、Z型或S型中一种或一种以上形状。\n\n[0019]根据本发明一优选实施例，所述屏下摄像头显示面板的背部设置有摄像头，所述摄像头与所述Micro LED像素对位设置。\n\n[0020]依据上述实施例的屏下摄像头显示面板，本发明还提供一种如上述实施例的屏下摄像头显示面板的透明显示区域的制备方法，所述透明显示区域的制备方法包括：\n\n[0021]步骤S10，提供一衬底，在所述衬底下方制备Micro LED驱动电路层。\n\n[0022]步骤S20，在所述Micro LED驱动电路层下方阵列设置Micro LED芯片，其中，所述Micro LED芯片的引脚设于所述Micro LED芯片的非出光面上，且所述引脚通过金属走线图案与所述驱动电路层电性连接。\n\n[0023]根据本发明一优选实施例，步骤S20具体包括：\n\n[0024]步骤S201，在所述透明驱动电路层下方形成钝化层，在所述钝化层下方形成平坦化层，在所述平坦化层下方形成光阻层。\n\n[0025]步骤S202，由所述光阻层向所述钝化层的方向上刻蚀第一过孔，所述第一过孔与所述Micro LED驱动电路层的电位输出端对位设置，然后剥离剩余所述光阻层。\n\n[0026]步骤S203，在所述第一过孔内和所述平坦化层表面制备金属走线图案，所述平坦化层对应所述金属走线图案之间设置所述Micro LED芯片，且所述金属走线图案通过点焊与所述Micro LED芯片的引脚电性连接。\n\n[0027]步骤S204，在所述Micro LED芯片背侧制备封装层，所述封装层的材料为无机材料。\n\n[0028]根据本发明一优选实施例，步骤S20具体包括：\n\n[0029]步骤S205，在所述透明驱动电路层下方形成钝化层，在所述钝化层下方设置所述Micro LED芯片，所述钝化层下方形成用于包裹所述Micro LED芯片的平坦化层，在所述平坦化层下方设置光阻层。\n\n[0030]步骤S206，由所述光阻层向所述钝化层的方向上刻蚀第二过孔和第三过孔，所述第二过孔和所述第三过孔分别与所述Micro LED驱动电路层的电位输出端和所述MicroLED芯片的引脚对位设置，然后剥离剩余的光阻层。\n\n[0031]步骤S207，在所述第二过孔内和所述第三过孔内以及位于所述第二过孔和所述第三过孔之间的平坦化层表面制备金属走线图案，以使金属走线图案电连接所述Micro LED芯片和所述Micro LED驱动电路层。\n\n[0032]步骤S208，在所述Micro LED芯片背侧制备封装层，所述封装层的材料为无机材料。\n\n[0033]本发明的有益效果：本发明实施例提供一种屏下摄像头显示面板及透明显示区域的制备方法，该屏下摄像头显示面板包括显示区域，显示区域内至少设置有一用于接受外界光的透明显示区域，透明显示区域包括阵列设置的Micro LED像素；其中，Micro LED像素包括衬底、设于衬底背侧的Micro LED驱动电路层、阵列设于Micro LED驱动电路层背侧的Micro LED芯片，Micro LED芯片的引脚位于Micro LED芯片的非出光面上，且引脚通过金属走线图案与驱动电路层电性连接；本发明中的Micro LED像素位于显示区域的内侧，确保了屏下摄像头显示面板的所有显示区的显示画面处于同一高度，避免Micro LED显示画面悬浮的问题，且每个Micro LED芯片避开出光面设置有引脚和金属走线图案，避免引脚影响Micro LED出光的面积和视角，从而提高了屏下摄像头显示面板的整个显示区的显示品质。\n\n附图说明\n\n[0034]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0035]图1为现有技术的三种显示屏环境光穿透率的示意图。\n\n[0036]图2至3为现有技术的两种全面屏的膜层结构示意图。\n\n[0037]图4为本发明提供一种屏下摄像头显示面板的膜层结构示意图。\n\n[0038]图5为本发明提供一种屏下摄像头显示面板的透明显示区域制备方法的流程中的一种结构示意图。\n\n[0039]图6为本发明提供一种屏下摄像头显示面板的透明显示区域制备方法的流程中的另一种结构示意图。\n\n具体实施方式\n\n[0040]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示，图中虚线表示在结构中并不存在的，仅仅说明结构的形状和位置。\n\n[0041]本发明针对现有技术利用Micro LED显示屏与液晶屏叠加形成全面屏后，存在Micro LED显示区出光品质较差的问题，本实施例能够解决该缺陷。\n\n[0042]本发明实施例提供一种屏下摄像头显示面板，该屏下摄像头显示面板包括显示区域，显示区域内至少设置有一用于接受外界光的透明显示区域，透明显示区域包括阵列设置的Micro LED像素；其中，Micro LED像素包括衬底、设于衬底背侧的Micro LED驱动电路层、阵列设于Micro LED驱动电路层背侧的Micro LED芯片，Micro LED芯片的引脚位于Micro LED芯片的非出光面上，且引脚通过金属走线图案与驱动电路层电性连接；本发明中的Micro LED像素位于显示区域的内侧，确保了屏下摄像头显示面板的所有显示区的显示画面处于同一高度，避免Micro LED显示画面悬浮的问题，且每个Micro LED芯片避开出光面设置有引脚和金属走线图案，避免引脚影响Micro LED出光的面积和视角，从而提高了屏下摄像头显示面板的整个显示区的显示品质。\n\n[0043]具体地，如图4中的(g)所示，本发明提供一种屏下摄像头显示面板的结构示意图。屏下摄像头显示面板100包括显示区域，该显示区域包括液晶区域1001和与液晶区域1001临近的透明显示区域1002，透明显示区域1002既可以正常显示，又可以透过环境光，以供屏下摄像头110获取所需要的环境光。液晶区域1001包括液晶像素，透明显示区域1002包括Micro LED像素，液晶像素的出光面与Micro LED像素的出光面平齐，避免Micro LED显示画面悬浮的问题。\n\n[0044]液晶像素包括背光源101、位于背光源101上的阵列基板103、与阵列基板103相对设置的彩膜基板105、以及位于阵列基板103和彩膜基板105之间的液晶层104，阵列基板103包括基底1031和位于基底1031之上的液晶驱动电路层1032，液晶层104包括框胶和位于框胶内的液晶1041，彩膜基板105包括衬底1051和位于衬底1051之下的色阻层1052，色阻层1052包括阵列设置的红色色阻块、绿色色阻块和蓝色色阻块。本实施例的背光源101与阵列基板103之间还设置有第一偏光片102，彩膜基板105表面还设置有第二偏光片106。基底1031和衬底1051均为透明聚酰薄膜或透明玻璃基板，液晶驱动电路层1032为有源选址驱动电路层(薄膜晶体管驱动电路层)，基底1031、液晶层104和衬底1051延伸至整个显示区域的膜层，即透明显示区域1002也具有有部分基底1031和部分衬底1051，透明显示区域1002中的部分液晶层104的液晶与液晶区域1001的液晶层104的液晶偏转角度在屏下摄像时存在差异。透明显示区域1002未设置第一偏光片102、第二偏光片106和背光源101。\n\n[0045]图4中的(g)结合图4中的(h)，可知显示区域内至少设置有一用于接受外界光的透明显示区域1002，透明显示区域1002包括阵列设置的Micro LED像素，屏下摄像头显示面板的背部设置有摄像头110，摄像头110与Micro LED像素对位设置。其中，Micro LED像素包括衬底1051、设于衬底1051背侧的Micro LED驱动电路层112、阵列设于Micro LED驱动电路层112背侧的Micro LED芯片111，Micro LED芯片111的引脚位于Micro LED芯片111的非出光面上，且引脚通过金属走线图案116与Micro LED驱动电路层112电性连接，Micro LED驱动电路层112为无源选址驱动电路层，无源选址驱动电路层采用透明的扫描线和数据线进行信号传递。\n\n[0046]本实施例的Micro LED像素还包括位于Micro LED驱动电路层112与Micro LED芯片111之间的钝化层113、用于放置Micro LED芯片111的平坦化层115、以及位于Micro LED芯片111背侧的封装层117；钝化层113的材料为透明的氮化硅和氧化硅，平坦化层115的材料为吸湿胶黏剂(POC胶)，封装层117的材料为无机材料，形成保护膜。其中，在屏下摄像头显示面板厚度方向上，Micro LED驱动电路层112、钝化层113、Micro LED芯片111、平坦化层115和封装层117形成有复合膜层，该复合膜层与色阻层1052齐平，避免Micro LED显示画面悬浮的问题。\n\n[0047]Micro LED芯片111出光侧与钝化层113之间设置有高透明粘结层114，高透明粘结层114的材料为光学透明胶或有机硅胶，用于固定Micro LED芯片111。\n\n[0048]本实施例的Micro LED芯片111的引脚包括位于出光面相反一侧两端的阳极绑定端1111和阴极绑定端1112，金属走线图案116包括第一金属走线图案1161和第二金属走线图案1162，Micro LED驱动电路层112设置有正电位输出端1121和负电位输出端1122；第一金属走线图案1161和第二金属走线图案1162的一端分别与阳极绑定端1111和阴极绑定端1112电性连接，另一端分别与正电位输出端1121和负电位输出端1122电性连接，金属走线图案与绑定端优选采用点焊电性连接，点焊的材料为锡或铟。第一金属走线图案1161和第二金属走线图案1162均为L型、U型、Z型或S型中一种或一种以上形状，便于弯折，提高金属走线图案116的柔韧性，另一方面金属走线图案为多段弯折形状，容易制备。由于本实施例的阳极绑定端1111、阴极绑定端1112、第一金属走线图案1161、第二金属走线图案1162、正电位输出端1121和负电位输出端1122均避开Micro LED芯片111出光面设计，避免绑定电极和金属走线影响Micro LED芯片111出光的面积和视角的问题，间接提高透明显示区域1002的显示品质。\n\n[0049]本实施例的Micro LED芯片111的长宽尺寸均为5um至50μm，厚度为5μm至8μm。相邻两个Micro LED像素之间的间距为100μm至300μm。\n\n[0050]依据上述实施例的屏下摄像头显示面板，本发明还提供一种屏下摄像头显示面板的透明显示区域制备方法，所述屏下摄像头显示面板包括显示区域，所述显示区域内至少设置有一用于接受外界光的透明显示区域，所述透明显示区域包括阵列设置的Micro LED像素，所述Micro LED像素至少包括Micro LED驱动电路层和与所述Micro LED驱动电路层电连接的Micro LED芯片，所述透明显示区域的制备方法包括：\n\n[0051]步骤S10，提供一衬底，在所述衬底下方制备Micro LED驱动电路层。\n\n[0052]步骤S20，在所述Micro LED驱动电路层下方阵列设置Micro LED芯片，其中，所述Micro LED芯片的引脚位于所述Micro LED芯片的非出光面上，且所述引脚通过金属走线图案与所述驱动电路层电性连接。\n\n[0053]本发明透明显示区域采用两种制备方法，其中一种制备方法如下：\n\n[0054]步骤S20具体包括：步骤S201，在所述透明驱动电路层下方形成钝化层，在所述钝化层下方形成平坦化层，在所述平坦化层下方形成光阻层；步骤S202，由所述光阻层向所述钝化层的方向上刻蚀第一过孔，所述第一过孔与所述Micro LED驱动电路层的电位输出端对位设置，然后剥离剩余所述光阻层；步骤S203，在所述第一过孔内和所述平坦化层表面制备金属走线图案，所述平坦化层对应所述金属走线图案之间设置所述Micro LED芯片，且所述金属走线图案通过点焊与所述Micro LED芯片的引脚电性连接；步骤S204，在所述MicroLED芯片背侧制备封装层，所述封装层的材料为无机材料。\n\n[0055]具体地，如图5中的(a)所示，在衬底1051之下按显示面板常规工艺进行Micro LED驱动电路层112制作，Micro LED驱动电路层112为无源选址驱动电路层，无源选址驱动电路层采用透明的扫描线和数据线进行信号传递。在Micro LED驱动电路层112之下制备钝化层113，Micro LED驱动电路层112外漏正电位输出端1121和负电位输出端1122，其中，衬底1051优选为玻璃基板，钝化层113优选为氧化硅和氮化硅复合材料。如图5中的(b)所示，在钝化层113之下制备平坦化层115，在平坦化层115之下制备光阻层121，平坦化层115的材料优选为透明的POC胶，在显示面板膜层厚度方向上，平坦化层115的厚度比Micro LED芯片大出±2μm以内，Micro LED芯片的厚度为5μm-8μm。如图5中的(c)所示，由光阻层121向钝化层113的方向上刻蚀第一过孔122和第一过孔123，第一过孔122和第一过孔123分别与MicroLED驱动电路层112的正电位输出端1121和负电位输出端1122对位设置，然后剥离剩余的光阻层121。如图5中的(d)所示，在第一过孔122内、第一过孔123内和第一过孔122和第二过孔123之间平坦化层115表面制备金属走线图案1161和金属走线图案1162。如图5中的(e)和5(f)所示，平坦化层115对应金属走线图案之间设置方型凹槽124，并在方型凹槽124内设置Micro LED芯片111，Micro LED芯片111的出光面与钝化层113之间设置有高透明粘结层114，高透明粘结层114的材料为光学透明胶或有机硅胶，Micro LED芯片111背离出光面一侧外漏有阳极绑定端1111和阴极绑定端1112。如图5中的(g)和5(h)所示，第一金属走线图案1161和第二金属走线图案1162的一端分别通过点焊与阳极绑定端1111和阴极绑定端1112电性连接，另一端分别与正电位输出端和1121负电位输出端1122电性连接，点焊的材料为锡或铟，点焊层包括点焊层125和点焊层126。如图5中的(i)所示，在Micro LED芯片111背侧制备封装层117，封装层117的材料为无机材料，Micro LED芯片111的出光面出射光线S3。\n\n[0056]制备透明显示区域的另一种制备方法如下：步骤S20具体包括：步骤S205，在所述透明驱动电路层下方形成钝化层，在所述钝化层下方设置所述Micro LED芯片，所述钝化层下方用于包裹所述Micro LED芯片的平坦化层，在所述平坦化层下方设置光阻层；步骤S206，由所述光阻层向所述钝化层的方向上刻蚀第二过孔和第三过孔，所述第二过孔和所述第三过孔分别与所述Micro LED驱动电路层的电位输出端和所述Micro LED芯片的引脚对位设置，然后剥离剩余的光阻层；步骤S207，在所述第二过孔内和所述第三过孔内以及位于所述第二过孔和所述第三过孔之间的平坦化层表面制备金属走线图案，以使金属走线图案电连接所述Micro LED芯片和所述Micro LED驱动电路层；步骤S208，在所述Micro LED芯片背侧制备封装层，所述封装层的材料为无机材料。\n\n[0057]具体地，如图6中的(a)所示，在衬底1051之下按显示面板常规工艺进行Micro LED驱动电路层112制作，在Micro LED驱动电路层112之下制备钝化层113，Micro LED驱动电路层112外漏正电位输出端1121和负电位输出端1122，其中，衬底1051优选为玻璃基板，钝化层113优选为氧化硅和氮化硅复合材料。如图6中的(b)所示，在钝化层113下方设置MicroLED芯片111，Micro LED芯片111的出光面与钝化层113之间设置有高透明粘结层114，高透明粘结层114的材料为光学透明胶或有机硅胶，Micro LED芯片111背离出光面一侧外漏有阳极绑定端1111和阴极绑定端1112。如图6中的(c)所示，钝化层113下方制备包裹MicroLED芯片111的平坦化层115，平坦化层115之下制备光阻层121，平坦化层115的材料优选为透明的POC胶，在显示面板膜层厚度方向上，平坦化层115的厚度比Micro LED芯片大出±2μm以内，Micro LED芯片的厚度为5μm-8μm。如图6中的(d)至6(f)，由光阻层向钝化层的方向上刻蚀第二过孔1221、第三过孔1222、第二过孔1231和第三过孔1232，第二过孔1221和第二过孔1231分别与正电位输出端1121和负电位输出端1122对位设置，第三过孔1222和第三过孔1232分别与阳极绑定端1111和阴极绑定端1112对位设置，图6中的(f)为第二过孔1221和第二过孔1231的俯视结构示意图。如图6中的(g)所示，在第二过孔1221内、第三过孔1222内、第二过孔1231内、第三过孔1232内、第二过孔1221与第三过孔1222之间的平坦化层表面、第二过孔1231内和第三过孔1232之间的平坦化层表面制备金属走线图案1161和金属走线图案1162，第一金属走线图案1161和第二金属走线图案1162的一端分别与阳极绑定端1111和阴极绑定端1112电性连接，另一端分别与正电位输出端和1121负电位输出端1122电性连接。如图6中的(h)所示，在Micro LED芯片111背侧制备封装层117，封装层117的材料为无机材料。\n\n[0058]在另一实施例中制备透明显示区域时，还可以将屏下摄像头显示面板反置，然后制备依次透明显示区域各个膜层和安装好Micro LED芯片以后，再将屏下摄像头显示面板翻转过来，以正常放置，出光面朝上，背光源朝下，透明显示区域的制备方法跟上述实施例的方法类似，区别点为制备时膜层的朝向不同，此处不再赘述具体膜层制备方法。\n\n[0059]本发明实施例提供一种屏下摄像头显示面板及透明显示区域的制备方法，该屏下摄像头显示面板包括显示区域，显示区域内至少设置有一用于接受外界光的透明显示区域，透明显示区域包括阵列设置的Micro LED像素；其中，Micro LED像素包括衬底、设于衬底背侧的Micro LED驱动电路层、阵列设于Micro LED驱动电路层背侧的Micro LED芯片，Micro LED芯片的引脚位于Micro LED芯片的非出光面上，且引脚通过金属走线图案与驱动电路层电性连接；本发明中的Micro LED像素位于显示区域的内侧，确保了屏下摄像头显示面板的所有显示区的显示画面处于同一高度，避免Micro LED显示画面悬浮的问题，且每个Micro LED芯片避开出光面设置有引脚和金属走线图案，避免引脚影响Micro LED出光的面积和视角，从而提高了屏下摄像头显示面板的整个显示区的显示品质。\n\n[0060]综上，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及显示技术领域，特别涉及一种屏下摄像头显示面板及透明显示区域的制备方法。\n\n背景技术\n\n[0002]随着显示面板的快速发展，具有高屏占比的显示面板成为当前发展的趋势，例如全面屏手机依次发展为异形屏、美人尖、挖空屏，这些都是为了提高显示面板的屏占比。由于全面屏手机在出光面一侧设置有前置摄像头，液晶屏属于整面背光的被动发光，前置摄像头与光学显示无法同时在盲孔或通孔上重合，因此限制了液晶屏向全面屏的方向发展。\n\n[0003]为了解决上述问题，面板厂家发现Micro LED显示面板具有超高亮度，高对比度，响应时间快，透明度高，可绕性等物理特点，成为全面屏手机所需显示产品，例如，参考图1中的(a)，在既能正常显示又能保证外界光线穿过屏体情况下，外界光穿过液晶屏11的透过率为10％；参考图1中的(b)，外界光穿过OLED屏12的透过率可达到为50％；参考图1中的(c)，外界光穿过Micro LED屏13的透过率可达到为80％。但是目前Micro LED芯粒的巨量转移技术未有突破，在制备技术上存在巨量转移良率低和效率低的问题，现阶段无法用MicroLED来大尺寸批量化的Micro LED显示器，但小尺寸Micro LED显示屏可以实现，因此利用小尺寸的Micro LED显示屏填补前置摄像头上缺失显示，可实现真正意义上的全面屏，参考图2和图3。\n\n[0004]如图2中的(c)所示，现有技术的全面屏包括液晶显示区20和Micro LED显示区30，液晶显示区20包括背光源21、阵列基板、液晶层25、以及彩膜基板，其中，阵列基板包括第一基板23和位于第一基板23之上的驱动电路层24，彩膜基板包括第二基板26和位于第二基板26之下的色阻层25，阵列基板的背部设置有第一偏光片22，彩膜基板表面设置有第二偏光片27。Micro LED显示区30包括与色阻层同层设置的Micro LED芯片32和位于Micro LED芯片32之上的驱动电路层33，其中，Micro LED芯片32外设置有封装层31，Micro LED显示区30背部还设置有光学传感器34。如图2中的(d)所示，Micro LED芯片32出光面与驱动电路层33之间采用绑定电极35和绑定电极36连接，存在Micro LED芯片32出光被绑定电极遮挡，导致Micro LED显示区30出射光线S1出光面积和视角较小的问题。\n\n[0005]如图3中的(e)所示，图3中的(e)的液晶显示区20跟图2中的(c)相同，Micro LED显示区40包括位于第二基板26表面的驱动电路层41和位于驱动电路层41表面的Micro LED芯片43，Micro LED芯片43外围设置有封装层42，Micro LED显示区40背部还设置有光学传感器44。如图3中的(f)所示，Micro LED芯片43底部与驱动电路层41之间采用绑定电极45和绑定电极46连接，存在液晶显示区20和Micro LED显示区40显示不共面，导致Micro LED显示区40出射光线S2的显示画面悬浮的问题。\n\n[0006]综上所述，现有技术利用Micro LED显示屏与液晶屏叠加形成全面屏后，存在Micro LED显示区出光品质较差的问题，需要改进。\n\n发明内容\n\n[0007]本发明提供一种屏下摄像头显示面板及透明显示区域的制备方法，能够解决现有技术利用Micro LED显示屏与液晶屏叠加形成全面屏后，存在Micro LED显示区出光品质较差的问题。\n\n[0008]本发明提供的技术方案如下：\n\n[0009]本发明实施例提供一种屏下摄像头显示面板，该屏下摄像头显示面板包括显示区域，所述显示区域内至少设置有一用于接受外界光的透明显示区域，所述透明显示区域包括阵列设置的Micro LED像素。\n\n[0010]其中，所述Micro LED像素包括衬底、设于所述衬底背侧的Micro LED驱动电路层、阵列设于所述Micro LED驱动电路层背侧的Micro LED芯片，所述Micro LED芯片的引脚位于所述Micro LED芯片的非出光面上，且所述引脚通过金属走线图案与所述驱动电路层电性连接。\n\n[0011]根据本发明一优选实施例，除所述透明显示区域之外的显示区域包括液晶像素，所述液晶像素的出光面与所述Micro LED像素的出光面平齐。\n\n[0012]其中，所述液晶像素包括阵列基板、与所述阵列基板相对设置的彩膜基板、以及位于所述阵列基板和所述彩膜基板之间的液晶层，所述阵列基板包括基底和位于所述基底之上的液晶驱动电路层，所述彩膜基板包括所述衬底和位于所述衬底背侧的色阻层；所述液晶层、所述基底和所述衬底延伸至所述Micro LED像素内。\n\n[0013]根据本发明一优选实施例，所述Micro LED像素还包括位于所述Micro LED驱动电路层与所述Micro LED芯片之间的钝化层、用于放置所述Micro LED芯片的平坦化层、以及位于所述Micro LED芯片背侧的封装层。\n\n[0014]其中，在所述屏下摄像头显示面板厚度方向上，所述Micro LED驱动电路层、所述钝化层、所述Micro LED芯片、所述平坦化层和所述封装层形成有复合膜层，所述复合膜层与所述色阻层齐平。\n\n[0015]根据本发明一优选实施例，所述Micro LED芯片出光侧与所述钝化层之间设置有高透明粘结层，所述高透明粘结层的材料为光学透明胶或有机硅胶。\n\n[0016]根据本发明一优选实施例，所述引脚包括位于所述出光面相反一侧两端的阳极绑定端和阴极绑定端，所述金属走线图案包括第一金属走线图案和第二金属走线图案，所述Micro LED驱动电路层设置有正电位输出端和负电位输出端。\n\n[0017]所述第一金属走线图案和所述第二金属走线图案的一端分别与所述阳极绑定端和阴极绑定端电性连接，另一端分别与所述正电位输出端和所述负电位输出端电性连接。\n\n[0018]根据本发明一优选实施例，所述第一金属走线图案和所述第二金属走线图案均为L型、U型、Z型或S型中一种或一种以上形状。\n\n[0019]根据本发明一优选实施例，所述屏下摄像头显示面板的背部设置有摄像头，所述摄像头与所述Micro LED像素对位设置。\n\n[0020]依据上述实施例的屏下摄像头显示面板，本发明还提供一种如上述实施例的屏下摄像头显示面板的透明显示区域的制备方法，所述透明显示区域的制备方法包括：\n\n[0021]步骤S10，提供一衬底，在所述衬底下方制备Micro LED驱动电路层。\n\n[0022]步骤S20，在所述Micro LED驱动电路层下方阵列设置Micro LED芯片，其中，所述Micro LED芯片的引脚设于所述Micro LED芯片的非出光面上，且所述引脚通过金属走线图案与所述驱动电路层电性连接。\n\n[0023]根据本发明一优选实施例，步骤S20具体包括：\n\n[0024]步骤S201，在所述透明驱动电路层下方形成钝化层，在所述钝化层下方形成平坦化层，在所述平坦化层下方形成光阻层。\n\n[0025]步骤S202，由所述光阻层向所述钝化层的方向上刻蚀第一过孔，所述第一过孔与所述Micro LED驱动电路层的电位输出端对位设置，然后剥离剩余所述光阻层。\n\n[0026]步骤S203，在所述第一过孔内和所述平坦化层表面制备金属走线图案，所述平坦化层对应所述金属走线图案之间设置所述Micro LED芯片，且所述金属走线图案通过点焊与所述Micro LED芯片的引脚电性连接。\n\n[0027]步骤S204，在所述Micro LED芯片背侧制备封装层，所述封装层的材料为无机材料。\n\n[0028]根据本发明一优选实施例，步骤S20具体包括：\n\n[0029]步骤S205，在所述透明驱动电路层下方形成钝化层，在所述钝化层下方设置所述Micro LED芯片，所述钝化层下方形成用于包裹所述Micro LED芯片的平坦化层，在所述平坦化层下方设置光阻层。\n\n[0030]步骤S206，由所述光阻层向所述钝化层的方向上刻蚀第二过孔和第三过孔，所述第二过孔和所述第三过孔分别与所述Micro LED驱动电路层的电位输出端和所述MicroLED芯片的引脚对位设置，然后剥离剩余的光阻层。\n\n[0031]步骤S207，在所述第二过孔内和所述第三过孔内以及位于所述第二过孔和所述第三过孔之间的平坦化层表面制备金属走线图案，以使金属走线图案电连接所述Micro LED芯片和所述Micro LED驱动电路层。\n\n[0032]步骤S208，在所述Micro LED芯片背侧制备封装层，所述封装层的材料为无机材料。\n\n[0033]本发明的有益效果：本发明实施例提供一种屏下摄像头显示面板及透明显示区域的制备方法，该屏下摄像头显示面板包括显示区域，显示区域内至少设置有一用于接受外界光的透明显示区域，透明显示区域包括阵列设置的Micro LED像素；其中，Micro LED像素包括衬底、设于衬底背侧的Micro LED驱动电路层、阵列设于Micro LED驱动电路层背侧的Micro LED芯片，Micro LED芯片的引脚位于Micro LED芯片的非出光面上，且引脚通过金属走线图案与驱动电路层电性连接；本发明中的Micro LED像素位于显示区域的内侧，确保了屏下摄像头显示面板的所有显示区的显示画面处于同一高度，避免Micro LED显示画面悬浮的问题，且每个Micro LED芯片避开出光面设置有引脚和金属走线图案，避免引脚影响Micro LED出光的面积和视角，从而提高了屏下摄像头显示面板的整个显示区的显示品质。\n\n附图说明\n\n[0034]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0035]图1为现有技术的三种显示屏环境光穿透率的示意图。\n\n[0036]图2至3为现有技术的两种全面屏的膜层结构示意图。\n\n[0037]图4为本发明提供一种屏下摄像头显示面板的膜层结构示意图。\n\n[0038]图5为本发明提供一种屏下摄像头显示面板的透明显示区域制备方法的流程中的一种结构示意图。\n\n[0039]图6为本发明提供一种屏下摄像头显示面板的透明显示区域制备方法的流程中的另一种结构示意图。\n\n具体实施方式\n\n[0040]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示，图中虚线表示在结构中并不存在的，仅仅说明结构的形状和位置。\n\n[0041]本发明针对现有技术利用Micro LED显示屏与液晶屏叠加形成全面屏后，存在Micro LED显示区出光品质较差的问题，本实施例能够解决该缺陷。\n\n[0042]本发明实施例提供一种屏下摄像头显示面板，该屏下摄像头显示面板包括显示区域，显示区域内至少设置有一用于接受外界光的透明显示区域，透明显示区域包括阵列设置的Micro LED像素；其中，Micro LED像素包括衬底、设于衬底背侧的Micro LED驱动电路层、阵列设于Micro LED驱动电路层背侧的Micro LED芯片，Micro LED芯片的引脚位于Micro LED芯片的非出光面上，且引脚通过金属走线图案与驱动电路层电性连接；本发明中的Micro LED像素位于显示区域的内侧，确保了屏下摄像头显示面板的所有显示区的显示画面处于同一高度，避免Micro LED显示画面悬浮的问题，且每个Micro LED芯片避开出光面设置有引脚和金属走线图案，避免引脚影响Micro LED出光的面积和视角，从而提高了屏下摄像头显示面板的整个显示区的显示品质。\n\n[0043]具体地，如图4中的(g)所示，本发明提供一种屏下摄像头显示面板的结构示意图。屏下摄像头显示面板100包括显示区域，该显示区域包括液晶区域1001和与液晶区域1001临近的透明显示区域1002，透明显示区域1002既可以正常显示，又可以透过环境光，以供屏下摄像头110获取所需要的环境光。液晶区域1001包括液晶像素，透明显示区域1002包括Micro LED像素，液晶像素的出光面与Micro LED像素的出光面平齐，避免Micro LED显示画面悬浮的问题。\n\n[0044]液晶像素包括背光源101、位于背光源101上的阵列基板103、与阵列基板103相对设置的彩膜基板105、以及位于阵列基板103和彩膜基板105之间的液晶层104，阵列基板103包括基底1031和位于基底1031之上的液晶驱动电路层1032，液晶层104包括框胶和位于框胶内的液晶1041，彩膜基板105包括衬底1051和位于衬底1051之下的色阻层1052，色阻层1052包括阵列设置的红色色阻块、绿色色阻块和蓝色色阻块。本实施例的背光源101与阵列基板103之间还设置有第一偏光片102，彩膜基板105表面还设置有第二偏光片106。基底1031和衬底1051均为透明聚酰薄膜或透明玻璃基板，液晶驱动电路层1032为有源选址驱动电路层(薄膜晶体管驱动电路层)，基底1031、液晶层104和衬底1051延伸至整个显示区域的膜层，即透明显示区域1002也具有有部分基底1031和部分衬底1051，透明显示区域1002中的部分液晶层104的液晶与液晶区域1001的液晶层104的液晶偏转角度在屏下摄像时存在差异。透明显示区域1002未设置第一偏光片102、第二偏光片106和背光源101。\n\n[0045]图4中的(g)结合图4中的(h)，可知显示区域内至少设置有一用于接受外界光的透明显示区域1002，透明显示区域1002包括阵列设置的Micro LED像素，屏下摄像头显示面板的背部设置有摄像头110，摄像头110与Micro LED像素对位设置。其中，Micro LED像素包括衬底1051、设于衬底1051背侧的Micro LED驱动电路层112、阵列设于Micro LED驱动电路层112背侧的Micro LED芯片111，Micro LED芯片111的引脚位于Micro LED芯片111的非出光面上，且引脚通过金属走线图案116与Micro LED驱动电路层112电性连接，Micro LED驱动电路层112为无源选址驱动电路层，无源选址驱动电路层采用透明的扫描线和数据线进行信号传递。\n\n[0046]本实施例的Micro LED像素还包括位于Micro LED驱动电路层112与Micro LED芯片111之间的钝化层113、用于放置Micro LED芯片111的平坦化层115、以及位于Micro LED芯片111背侧的封装层117；钝化层113的材料为透明的氮化硅和氧化硅，平坦化层115的材料为吸湿胶黏剂(POC胶)，封装层117的材料为无机材料，形成保护膜。其中，在屏下摄像头显示面板厚度方向上，Micro LED驱动电路层112、钝化层113、Micro LED芯片111、平坦化层115和封装层117形成有复合膜层，该复合膜层与色阻层1052齐平，避免Micro LED显示画面悬浮的问题。\n\n[0047]Micro LED芯片111出光侧与钝化层113之间设置有高透明粘结层114，高透明粘结层114的材料为光学透明胶或有机硅胶，用于固定Micro LED芯片111。\n\n[0048]本实施例的Micro LED芯片111的引脚包括位于出光面相反一侧两端的阳极绑定端1111和阴极绑定端1112，金属走线图案116包括第一金属走线图案1161和第二金属走线图案1162，Micro LED驱动电路层112设置有正电位输出端1121和负电位输出端1122；第一金属走线图案1161和第二金属走线图案1162的一端分别与阳极绑定端1111和阴极绑定端1112电性连接，另一端分别与正电位输出端1121和负电位输出端1122电性连接，金属走线图案与绑定端优选采用点焊电性连接，点焊的材料为锡或铟。第一金属走线图案1161和第二金属走线图案1162均为L型、U型、Z型或S型中一种或一种以上形状，便于弯折，提高金属走线图案116的柔韧性，另一方面金属走线图案为多段弯折形状，容易制备。由于本实施例的阳极绑定端1111、阴极绑定端1112、第一金属走线图案1161、第二金属走线图案1162、正电位输出端1121和负电位输出端1122均避开Micro LED芯片111出光面设计，避免绑定电极和金属走线影响Micro LED芯片111出光的面积和视角的问题，间接提高透明显示区域1002的显示品质。\n\n[0049]本实施例的Micro LED芯片111的长宽尺寸均为5um至50μm，厚度为5μm至8μm。相邻两个Micro LED像素之间的间距为100μm至300μm。\n\n[0050]依据上述实施例的屏下摄像头显示面板，本发明还提供一种屏下摄像头显示面板的透明显示区域制备方法，所述屏下摄像头显示面板包括显示区域，所述显示区域内至少设置有一用于接受外界光的透明显示区域，所述透明显示区域包括阵列设置的Micro LED像素，所述Micro LED像素至少包括Micro LED驱动电路层和与所述Micro LED驱动电路层电连接的Micro LED芯片，所述透明显示区域的制备方法包括：\n\n[0051]步骤S10，提供一衬底，在所述衬底下方制备Micro LED驱动电路层。\n\n[0052]步骤S20，在所述Micro LED驱动电路层下方阵列设置Micro LED芯片，其中，所述Micro LED芯片的引脚位于所述Micro LED芯片的非出光面上，且所述引脚通过金属走线图案与所述驱动电路层电性连接。\n\n[0053]本发明透明显示区域采用两种制备方法，其中一种制备方法如下：\n\n[0054]步骤S20具体包括：步骤S201，在所述透明驱动电路层下方形成钝化层，在所述钝化层下方形成平坦化层，在所述平坦化层下方形成光阻层；步骤S202，由所述光阻层向所述钝化层的方向上刻蚀第一过孔，所述第一过孔与所述Micro LED驱动电路层的电位输出端对位设置，然后剥离剩余所述光阻层；步骤S203，在所述第一过孔内和所述平坦化层表面制备金属走线图案，所述平坦化层对应所述金属走线图案之间设置所述Micro LED芯片，且所述金属走线图案通过点焊与所述Micro LED芯片的引脚电性连接；步骤S204，在所述MicroLED芯片背侧制备封装层，所述封装层的材料为无机材料。\n\n[0055]具体地，如图5中的(a)所示，在衬底1051之下按显示面板常规工艺进行Micro LED驱动电路层112制作，Micro LED驱动电路层112为无源选址驱动电路层，无源选址驱动电路层采用透明的扫描线和数据线进行信号传递。在Micro LED驱动电路层112之下制备钝化层113，Micro LED驱动电路层112外漏正电位输出端1121和负电位输出端1122，其中，衬底1051优选为玻璃基板，钝化层113优选为氧化硅和氮化硅复合材料。如图5中的(b)所示，在钝化层113之下制备平坦化层115，在平坦化层115之下制备光阻层121，平坦化层115的材料优选为透明的POC胶，在显示面板膜层厚度方向上，平坦化层115的厚度比Micro LED芯片大出±2μm以内，Micro LED芯片的厚度为5μm-8μm。如图5中的(c)所示，由光阻层121向钝化层113的方向上刻蚀第一过孔122和第一过孔123，第一过孔122和第一过孔123分别与MicroLED驱动电路层112的正电位输出端1121和负电位输出端1122对位设置，然后剥离剩余的光阻层121。如图5中的(d)所示，在第一过孔122内、第一过孔123内和第一过孔122和第二过孔123之间平坦化层115表面制备金属走线图案1161和金属走线图案1162。如图5中的(e)和5(f)所示，平坦化层115对应金属走线图案之间设置方型凹槽124，并在方型凹槽124内设置Micro LED芯片111，Micro LED芯片111的出光面与钝化层113之间设置有高透明粘结层114，高透明粘结层114的材料为光学透明胶或有机硅胶，Micro LED芯片111背离出光面一侧外漏有阳极绑定端1111和阴极绑定端1112。如图5中的(g)和5(h)所示，第一金属走线图案1161和第二金属走线图案1162的一端分别通过点焊与阳极绑定端1111和阴极绑定端1112电性连接，另一端分别与正电位输出端和1121负电位输出端1122电性连接，点焊的材料为锡或铟，点焊层包括点焊层125和点焊层126。如图5中的(i)所示，在Micro LED芯片111背侧制备封装层117，封装层117的材料为无机材料，Micro LED芯片111的出光面出射光线S3。\n\n[0056]制备透明显示区域的另一种制备方法如下：步骤S20具体包括：步骤S205，在所述透明驱动电路层下方形成钝化层，在所述钝化层下方设置所述Micro LED芯片，所述钝化层下方用于包裹所述Micro LED芯片的平坦化层，在所述平坦化层下方设置光阻层；步骤S206，由所述光阻层向所述钝化层的方向上刻蚀第二过孔和第三过孔，所述第二过孔和所述第三过孔分别与所述Micro LED驱动电路层的电位输出端和所述Micro LED芯片的引脚对位设置，然后剥离剩余的光阻层；步骤S207，在所述第二过孔内和所述第三过孔内以及位于所述第二过孔和所述第三过孔之间的平坦化层表面制备金属走线图案，以使金属走线图案电连接所述Micro LED芯片和所述Micro LED驱动电路层；步骤S208，在所述Micro LED芯片背侧制备封装层，所述封装层的材料为无机材料。\n\n[0057]具体地，如图6中的(a)所示，在衬底1051之下按显示面板常规工艺进行Micro LED驱动电路层112制作，在Micro LED驱动电路层112之下制备钝化层113，Micro LED驱动电路层112外漏正电位输出端1121和负电位输出端1122，其中，衬底1051优选为玻璃基板，钝化层113优选为氧化硅和氮化硅复合材料。如图6中的(b)所示，在钝化层113下方设置MicroLED芯片111，Micro LED芯片111的出光面与钝化层113之间设置有高透明粘结层114，高透明粘结层114的材料为光学透明胶或有机硅胶，Micro LED芯片111背离出光面一侧外漏有阳极绑定端1111和阴极绑定端1112。如图6中的(c)所示，钝化层113下方制备包裹MicroLED芯片111的平坦化层115，平坦化层115之下制备光阻层121，平坦化层115的材料优选为透明的POC胶，在显示面板膜层厚度方向上，平坦化层115的厚度比Micro LED芯片大出±2μm以内，Micro LED芯片的厚度为5μm-8μm。如图6中的(d)至6(f)，由光阻层向钝化层的方向上刻蚀第二过孔1221、第三过孔1222、第二过孔1231和第三过孔1232，第二过孔1221和第二过孔1231分别与正电位输出端1121和负电位输出端1122对位设置，第三过孔1222和第三过孔1232分别与阳极绑定端1111和阴极绑定端1112对位设置，图6中的(f)为第二过孔1221和第二过孔1231的俯视结构示意图。如图6中的(g)所示，在第二过孔1221内、第三过孔1222内、第二过孔1231内、第三过孔1232内、第二过孔1221与第三过孔1222之间的平坦化层表面、第二过孔1231内和第三过孔1232之间的平坦化层表面制备金属走线图案1161和金属走线图案1162，第一金属走线图案1161和第二金属走线图案1162的一端分别与阳极绑定端1111和阴极绑定端1112电性连接，另一端分别与正电位输出端和1121负电位输出端1122电性连接。如图6中的(h)所示，在Micro LED芯片111背侧制备封装层117，封装层117的材料为无机材料。\n\n[0058]在另一实施例中制备透明显示区域时，还可以将屏下摄像头显示面板反置，然后制备依次透明显示区域各个膜层和安装好Micro LED芯片以后，再将屏下摄像头显示面板翻转过来，以正常放置，出光面朝上，背光源朝下，透明显示区域的制备方法跟上述实施例的方法类似，区别点为制备时膜层的朝向不同，此处不再赘述具体膜层制备方法。\n\n[0059]本发明实施例提供一种屏下摄像头显示面板及透明显示区域的制备方法，该屏下摄像头显示面板包括显示区域，显示区域内至少设置有一用于接受外界光的透明显示区域，透明显示区域包括阵列设置的Micro LED像素；其中，Micro LED像素包括衬底、设于衬底背侧的Micro LED驱动电路层、阵列设于Micro LED驱动电路层背侧的Micro LED芯片，Micro LED芯片的引脚位于Micro LED芯片的非出光面上，且引脚通过金属走线图案与驱动电路层电性连接；本发明中的Micro LED像素位于显示区域的内侧，确保了屏下摄像头显示面板的所有显示区的显示画面处于同一高度，避免Micro LED显示画面悬浮的问题，且每个Micro LED芯片避开出光面设置有引脚和金属走线图案，避免引脚影响Micro LED出光的面积和视角，从而提高了屏下摄像头显示面板的整个显示区的显示品质。\n\n[0060]综上，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10944, 23998, '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种薄膜晶体管及LED背板。\n\n背景技术\n\n[0002]随着高阶TV市场对画质的要求越来越高，提升显示画质成为高阶TV的一个新需求。目前8K OLED(OrganicElectroluminesence Display，有机发光二极管)受限于补偿电路、铟镓锌氧化物(indium gallium zinc oxide，IGZO)背板技术及驱动设计等问题，尚需开发。而Mini LED作为一个全新的显示技术，在亮度、功耗上较OLED和液晶显示有优势。\n\n[0003]Mini LED背光相比传统背光的区别在于：Mini LED可以通过区域调光(localdimming)实现百万级的对比度，而传统背光开启时所有的灯都会开启，在面板上不显示的区域也会受到背光照射，导致暗态不够黑，对比度低；而Mini LED可以与面板的显示画面匹配实现区域开启背光，面板上不显示的区域背光不开启，实现完全的黑态，从而达到百万级的对比度。其中主动式(Active Matrix，AM)Mini LED作为有源矩阵驱动技术，在提高显示画质的同时可以大幅降低驱动成本，因此目前正有多家企业在开发。\n\n[0004]但是由于Mini LED背板为电流驱动，因此对背板薄膜晶体管(Thin FilmTransistor，TFT)器件的驱动能力提出了更高的要求。但目前非晶硅薄膜晶体管(a-SiTFT)受限于迁移率、IGZO受限于稳定性，低温多晶硅(Low Temperature Poly-Silicon，LTPS)受限于复杂的制造工艺，成本过高，且难以满足大尺寸需求，在AM Mini-LED应用上均存在一定挑战。而且Mini-LED驱动对TFT的漏电要求也较高，TFT过高的漏电流会导致Mini-LED出现亮暗不均的问题。\n\n发明内容\n\n[0005]本申请实施例提供一种薄膜晶体管及LED背板，其拥有超高的开态电流，较低的漏电流，可以调控阈值电压，适用于LED背板。\n\n[0006]本申请实施例提供了一种薄膜晶体管，包括：\n\n[0007]第一栅极；\n\n[0008]第一绝缘层，覆盖所述第一栅极；\n\n[0009]第一源极，设在所述第一绝缘层远离所述第一栅极的一侧；\n\n[0010]半导体层，设在所述第一绝缘层远离所述第一栅极的一侧；\n\n[0011]第一漏极，设在所述第一绝缘层远离所述第一栅极的一侧；\n\n[0012]第二绝缘层，覆盖在所述第一漏极、所述半导体层和所述第一源极上；及\n\n[0013]第二栅极，设在所述第二绝缘层远离所述第一栅极一侧的表面上；\n\n[0014]其中所述第一源极、所述半导体层和所述第一漏极共同形成垂直沟道结构。\n\n[0015]可选的，在本申请一些实施例中，所述第一源极与所述半导体层靠近所述第一栅极一侧的表面电性连接，所述第一漏极与所述半导体层远离所述第一栅极一侧的表面电性连接。\n\n[0016]可选的，在本申请一些实施例中，所述第一源极通过第一导电薄膜与所述半导体层靠近所述第一栅极一侧的表面电性连接，且所述第一导电薄膜具有至少一贯穿孔。\n\n[0017]可选的，在本申请一些实施例中，所述第一导电薄膜为具有至少一贯穿孔的氧化铟锡薄膜或具有至少一贯穿孔的金属薄膜。\n\n[0018]可选的，在本申请一些实施例中，所述第一源极和所述半导体层均设在所述第一绝缘层远离所述第一栅极一侧的表面上，且所述第一导电薄膜由所述第一源极的表面延伸至所述半导体层靠近所述第一栅极一侧的表面，并至少部分覆盖所述第一源极的表面以及至少部分覆盖所述半导体层靠近所述第一栅极一侧的表面；\n\n[0019]或者，所述第一源极设在所述第一绝缘层远离所述第一栅极一侧的表面上，所述第一导电薄膜设在所述第一源极远离所述第一栅极一侧的表面上，所述半导体层设在所述第一导电薄膜远离所述第一栅极一侧的表面上。\n\n[0020]可选的，在本申请一些实施例中，所述第一漏极设在所述半导体层远离所述第一栅极一侧的表面上，并部分覆盖所述半导体层，所述第二栅极的正投影与所述半导体层的正投影至少部分重叠，且所述第二栅极的正投影与所述第一漏极的正投影无重叠。\n\n[0021]可选的，在本申请一些实施例中，所述第一漏极叠置在所述半导体层远离所述第一栅极的一侧的表面上，且所述第一漏极与所述半导体层之间设有第二导电薄膜，所述第二导电薄膜具有至少一贯穿孔。\n\n[0022]相应的，本申请实施例还提供了一种LED背板，其包括至少一上述任一所述的薄膜晶体管，并且所述薄膜晶体管用作为LED的驱动薄膜晶体管。\n\n[0023]可选的，在本申请一些实施例中，所述LED为Mini-LED。\n\n[0024]可选的，在本申请一些实施例中，所述LED背板包括2T1C电路结构，所述2T1C电路结构包括：\n\n[0025]一驱动薄膜晶体管；\n\n[0026]一开关薄膜晶体管，包括第三栅极、第二源极和第二漏极，所述第三栅极接入第一扫描信号，所述第二源极接入数据信号；\n\n[0027]一存储电容，其一端连接至所述开关薄膜晶体管的第一漏极，另一端接地；及\n\n[0028]一LED；\n\n[0029]其中，所述驱动薄膜晶体管的第一栅极连接至所述开关薄膜晶体管的第二漏极，所述驱动薄膜晶体管的第二栅极接入第二扫描信号，所述驱动薄膜晶体管的第一源极连接至所述LED的一端，所述LED的另一端接入工作电压信号，所述驱动薄膜晶体管的第一漏极接地\n\n[0030]本申请实施例所述薄膜晶体管采用双栅极垂直沟道结构，垂直沟道的长度即为半导体层的厚度，可以做到纳米级，能够使得薄膜晶体管拥有超高的开态电流以及更大的驱动能力，并且上下两个栅极的双栅极结构能够降低漏电流，还能够控制阈值电压。此外，本申请实施例所述薄膜晶体管用于LED背板(例如Mini-LED背板)能够提升所述LED背板的驱动能力，并且所述薄膜晶体管低漏电流的特性还能够提高LED的亮度均一性。\n\n附图说明\n\n[0031]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0032]图1是现有技术中传统平面结构薄膜晶体管的立体结构示意图；\n\n[0033]图2是本申请第一实施例提供的薄膜晶体管的第一种结构的立体示意图；\n\n[0034]图3是本申请第一实施例提供的薄膜晶体管的第一种结构的剖面示意图；\n\n[0035]图4是本申请第一实施例提供的薄膜晶体管的第二种结构的剖面示意图；\n\n[0036]图5是本申请第一实施例提供的薄膜晶体管的第三种结构的剖面示意图；\n\n[0037]图6是本申请第二实施例提供的薄膜晶体管的第一种结构的剖面示意图；\n\n[0038]图7是本申请第二实施例提供的薄膜晶体管的第二种结构的剖面示意图；\n\n[0039]图8是本申请第二实施例提供的薄膜晶体管的第三种结构的剖面示意图；\n\n[0040]图9是本申请实施例提供的LED背板的2T1C电路结构的电路图。\n\n具体实施方式\n\n[0041]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0042]请参阅图2至图9，本申请实施例提供一种薄膜晶体管(Thin Film Transistor，TFT)及Mini-LED背板，以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0043]请参阅图2至图5，本申请第一实施例提供了一种薄膜晶体管，具体为一种双栅极垂直沟道结构的薄膜晶体管。本申请第一实施例所述薄膜晶体管可以是N型TFT(以电子为载流子)，也可以是P型TFT(以空穴为载流子)。所述薄膜晶体管包括第一栅极100，第一绝缘层200，第一源极300，半导体层500，第一漏极700，第二绝缘层800和第二栅极900。\n\n[0044]所述第一栅极100的材质为金属材料，其可以通过物理气相沉积(PhysicalVapour Deposition，PVD)的方式制作。\n\n[0045]请参阅图2至图5，所述第一绝缘层200覆盖所述第一栅极100。所述第一绝缘层200的材质为绝缘材料。所述第一绝缘层200可以通过旋涂、化学气相沉积(Chemical VaporDeposition，CVD)或刮涂的方式制作。\n\n[0046]请参阅图2至图5，所述第一源极300、所述半导体层500和所述第一漏极700均设在所述第一绝缘层200远离所述第一栅极100的一侧，且所述第一源极300、所述半导体层500和所述第一漏极700共同形成垂直沟道结构。所述第一源极300的材质为金属材料，其可以通过旋涂或刮涂的方式制作。所述第一漏极700的材质均为金属材料，其可以通过物理气相沉积或蒸镀的方式制作。所述半导体层500的材质可以为有机半导体材料，其可以通过旋涂或刮涂的方式制作；所述半导体层500的材质也可以为无机半导体材料，其可以通过化学气相沉积及黄光制程制作。\n\n[0047]具体的，所述第一源极300与所述半导体层500靠近所述第一栅极100一侧的表面电性连接，所述第一漏极700与所述半导体层500远离所述第一栅极100一侧的表面电性连接。这样使得所述第一源极300、所述半导体层500和所述第一漏极700共同形成垂直沟道结构。\n\n[0048]在一实施例中，请参阅图2至图5，所述第一源极300通过第一导电薄膜400与所述半导体层500靠近所述第一栅极100一侧的表面电性连接，且所述第一导电薄膜400具有至少一贯穿孔。所述第一导电薄膜400具有贯穿孔，能够使所述第一栅极100的电场穿过所述贯穿孔调控所述半导体层500中的载流子，避免所述第一栅极100的电场被整层金属的所述第一源极300屏蔽。需要说明的是，所述第一导电薄膜400的贯穿孔是指在所述第一导电薄膜400厚度方向上(与所述第一栅极100垂直的方向)贯穿所述第一导电薄膜400，所述贯穿孔的数量可以是一个也可以是多个(例如两个、三个或以上)，所述贯穿孔的形状可以是规则图形(例如圆形、长方形或多边形)，也可以是不规则的形状，所述贯穿孔的尺寸包括但不限于为纳米级，当所述贯穿孔的数量为三个或三个以上时，它们可以是规则排列，也可以是不规则排列。所述第一导电薄膜400例如可以为具有至少一贯穿孔的氧化铟锡(ITO)薄膜，其可以通过在ITO薄膜上制作很多纳米小孔的方式制备，其中纳米小孔贯穿ITO薄膜的远离所述第一栅极100一侧的表面和靠近所述第一栅极100一侧的表面。所述第一导电薄膜400还可以例如为具有至少一贯穿孔的金属薄膜。所述金属薄膜的材质例如为金、银、铝等。在一实施例中，所述第一导电薄膜400为银纳米线薄膜。由于所述银纳米线的形态呈线形，因此所述银纳米线薄膜中很多银纳米线交叠在一起形成网状结构或类似网状的结构，使得所述第一栅极100的电场能够穿过所述银纳米线薄膜以调控所述半导体层500中的载流子。所述银纳米线薄膜可以通过旋涂含有银纳米线的溶液的方式制备，也可以通过自组装的方式制作。\n\n[0049]示例性的，请参阅图3和图4，所述第一源极300与所述半导体层500可以是同层设置(非叠置的)，具体的，所述第一源极300和所述半导体层500均设在所述第一绝缘层200远离所述第一栅极100一侧的表面上，且所述第一导电薄膜400由所述第一源极300的表面延伸至所述半导体层500靠近所述第一栅极100一侧的表面，并至少部分覆盖所述第一源极300的表面以及至少部分覆盖所述半导体层500靠近所述第一栅极100一侧的表面(即所述半导体层500的正投影与所述第一导电薄膜400的正投影有重叠)。可以理解的是，请参阅图3，所述第一导电薄膜400的一部分可以是至少部分覆盖在所述第一源极300远离所述第一栅极100一侧的表面上，此种情况下，所述第一导电薄膜400一部分设在所述第一源极300的上表面及侧壁上，另一部分设在所述第一绝缘层200上，在制作时，可以先在所述第一绝缘层200上制备所述第一源极300，再在所述第一源极300和所述第一绝缘层200上制备第一导电薄膜400(例如为银纳米线薄膜)，然后再在所述第一导电薄膜400上制备半导体层500(所述半导体层500与所述第一源极300无叠置)，需要说明的是，所述第一导电薄膜400可以是部分覆盖所述第一源极300远离所述第一栅极100一侧的表面，也可以是全部覆盖所述第一源极300远离所述第一栅极100一侧的表面，同样的，所述第一导电薄膜400可以是部分覆盖所述半导体层500靠近所述第一栅极100一侧的表面，也可以是全部覆盖所述半导体层500靠近所述第一栅极100一侧的表面；请参阅图4，所述第一导电薄膜400也可以是至少部分覆盖在所述第一源极300靠近所述第一栅极100一侧的表面上(即所述第一源极300的正投影与所述第一导电薄膜400的正投影有重叠)，此种情况下，所述第一导电薄膜400可以直接设在所述第一绝缘层200上，而所述第一源极300和所述半导体层500则设在所述第一导电薄膜400上，在制作时，可以先在所述第一绝缘层200上制备所述第一导电薄膜400，然后在所述第一导电薄膜400上制备所述第一源极300和所述半导体层500，需要说明的是，所述第一导电薄膜400可以是部分覆盖所述第一源极300靠近所述第一栅极100一侧的表面，也可以是全部覆盖所述第一源极300靠近所述第一栅极100一侧的表面，同样的，所述第一导电薄膜400可以是部分覆盖所述半导体层500靠近所述第一栅极100一侧的表面，也可以是全部覆盖所述半导体层500靠近所述第一栅极100一侧的表面。\n\n[0050]示例性的，请参阅图5，所述第一源极300与所述半导体层500还可以是叠置的，所述第一源极300设在所述第一绝缘层200远离所述第一栅极100一侧的表面上，所述第一导电薄膜400设在所述第一源极300远离所述第一栅极100一侧的表面上，所述半导体层500设在所述第一导电薄膜400远离所述第一栅极100一侧的表面上，即所述第一源极300、所述第一导电薄膜400和所述半导体层500依次叠置。在本实施例中，由于所述第一导电薄膜400具有贯穿孔，使得所述第一栅极100的电场能够透过所述贯穿孔调控所述半导体层500中的载流子，而不被所述第一源极300屏蔽。\n\n[0051]现有技术较常采用的是传统平面型薄膜晶体管，请参阅图1，传统平面型薄膜晶体管包括栅极10，电介质绝缘层20、源极30、沟道层40和漏极50，其中所述源极30、所述漏极50和沟道层40在同一层上水平设置，载流子传输方向或电流方向位于水平传输(如图1中所示的X方向)，由于传统平面型薄膜晶体管受限于曝光机精度，其沟道长度最短只能做到微米级(例如大约10微米)，因而导致平面型薄膜晶体管输出电流不高，驱动能力受限。\n\n[0052]本申请实施例所述薄膜晶体管采用垂直沟道结构，载流子传输方向或电流方向为垂直传输(如图3至图5中所示的Y方向)，垂直沟道的长度即为半导体层500的厚度，而半导体层500可以做到纳米级，是传统平面型薄膜晶体管的百分之一甚至更小，因而本申请实施例所述薄膜晶体管拥有超高的开态电流以及更大的驱动能力。\n\n[0053]请参阅图2至图5所示，所述第一漏极700设在所述半导体层500远离所述第一栅极100一侧的表面上，并部分覆盖所述半导体层500。在制作时，直接在所述半导体层500上制作所述第一漏极700，图案化使所述半导体层500从所述第一漏极700中部分暴露出来。\n\n[0054]请参阅图2至图5所示，所述第二绝缘层800覆盖在所述第一漏极700、所述半导体层500和所述第一源极300上。所述第二绝缘层800的材质为绝缘材料，其可以通过旋涂、化学气相沉积和刮涂的方式制作。\n\n[0055]请参阅图2至图5所示，所述第二栅极900设在所述第二绝缘层800远离所述第一栅极100一侧的表面上。所述第二栅极900的材质为金属材料，其可以通过物理气相沉积的方式制作。具体的，所述第二栅极900的正投影与所述半导体层500的正投影至少部分重叠，且所述第二栅极900的正投影与所述第一漏极700的正投影无重叠，即：使所述第二栅极900的位置与所述半导体层500从所述第一漏极700中暴露的部分相对应，进而使所述第二栅极900的电场能够到达所述半导体层500并调控所述半导体层500的载流子，而避免被所述第一漏极700屏蔽。\n\n[0056]本申请实施例所述薄膜晶体管采用上下两个栅极(即所述第一栅极100和所述第二栅极900)的双栅结构，不仅能够增强栅极对载流子的控制能力，降低漏电流，还能够控制阈值电压。当所述薄膜晶体管为N型时，所述薄膜晶体管的工作原理为：(1)开启阶段：所述第一栅极100给一个正的高电位开启电压，在所述半导体层500与所述第一导电膜层的界面处产生电子，所述薄膜晶体管开启；所述第二栅极900给一个负的电压，进一步使得所述半导体中的电子向沟道处聚集，增加沟道中的载流子，增加开态电流；(2)关闭阶段(主要为空穴参与导电)：所述第一栅极100给一个负向的电压，沟道界面处半导体层500的载流子耗尽，电子向背沟道移动(所述半导体层500与所述第二绝缘层800的界面)，空穴向沟道移动，此时沟道中仅有少子空穴参与导电；所述第二栅极900同样为负电压，背沟道中的空穴向前沟道(所述半导体层500与所述第一绝缘层200的界面)移动，减少了向沟道移动的空穴数量，从而降低漏电流(off电流)。\n\n[0057]当所述薄膜晶体管为P型时，所述薄膜晶体管的工作原理为：(1)开启阶段：所述第一栅极100给一个负的高电位开启电压，在所述半导体层500与所述第一导电膜层的界面处产生空穴，所述薄膜晶体管开启；所述第二栅极900给一个正的电压，进一步使得所述半导体中的空穴向沟道处聚集，增加沟道中的载流子，增加开态电流；(2)关闭阶段(主要为电子参与导电)：所述第一栅极100给一个正向的电压，沟道界面处半导体层500的载流子耗尽，空穴向背沟道移动(所述半导体层500与所述第二绝缘层800的界面)，电子向沟道移动，此时沟道中仅有少数电子参与导电；所述第二栅极900同样为正电压，背沟道中的电子向前沟道(所述半导体层500与所述第一绝缘层200的界面)移动，可以减少向沟道移动的电子数量，从而降低漏电流(off电流)。\n\n[0058]请参阅图6至图8，本申请第二实施例的薄膜晶体管也为双栅极垂直沟道结构的薄膜晶体管，其可以是N型TFT(以电子为载流子)，也可以是P型TFT(以空穴为载流子)，其结构相似于本申请第一实施例，并大致沿用相同元件名称及图号，但其与第一实施例的区别在于：第二实施例的薄膜晶体管进一步增设第二导电薄膜600。具体的，所述第一漏极700叠置在所述半导体层500远离所述第一栅极100的一侧的表面上，且所述第一漏极700与所述半导体层500之间设有第二导电薄膜600，所述第二导电薄膜600具有至少一贯穿孔。本申请第二实施例中，所述第二导电薄膜600具有贯穿孔，能够使得所述第二栅极900的电场能够穿过所述贯穿孔调控所述半导体层500中的载流子，避免所述第二栅极900的电场被整层金属的所述第一漏极700屏蔽。\n\n[0059]需要说明的是，所述第二导电薄膜600的贯穿孔是指在所述第二导电薄膜600厚度方向上(与所述第一栅极100垂直的方向)贯穿所述第二导电薄膜600，所述贯穿孔的数量可以是一个也可以是多个(例如两个、三个或以上)，所述贯穿孔的形状可以是规则图形(例如圆形、长方形或多边形)，也可以是不规则的形状，所述贯穿孔的尺寸包括但不限于为纳米级，当所述贯穿孔的数量为三个或三个以上时，它们可以是规则排列，也可以是不规则排列。所述第二导电薄膜600与所述第一导电薄膜400的材质可以是相同的，也可以是不同的；所述第二导电薄膜600与所述第一导电薄膜400不会将所述第一源极300与所述第一漏极700短接。所述第二导电薄膜600例如可以为具有至少一贯穿孔的氧化铟锡(ITO)薄膜，其可以通过在ITO薄膜上制作很多纳米小孔的方式制备，其中纳米小孔贯穿ITO薄膜的远离所述第一栅极100一侧的表面和靠近所述第一栅极100一侧的表面。所述第二导电薄膜600还可以为具有至少一贯穿孔的金属薄膜，所述金属薄膜的材质例如为金、银、铝等。在一实施例中，所述第二导电薄膜600为银纳米线薄膜。\n\n[0060]在本实施例中，与第一实施例相同，所述第一源极300与所述半导体层500可以是非叠置的(请参阅图6和图7)，也可以叠置的(请参阅图8)。相关描述可以参考第一实施例。\n\n[0061]本实施例通过增设所述第二导电薄膜600可以使得第二栅极900的位置不受所述第一漏极700的限制，使得所述第二栅极900的电场能够穿过所述第二导电薄膜600的贯穿孔以调控所述半导体层500中的载流子，而避免所述第二栅极900的电场被由整层金属制成的所述第一漏极700所屏蔽。因此本实施例无需因防止所述第二栅极900的电场被所述第一漏极700屏蔽而专门将所述半导体层500从所述第一漏极700中部分暴露出来，而所述第一漏极700则可以是完全覆盖所述半导体层500的，简化了制作工艺。在制作时，在所述半导体层500上制备一层具有贯穿孔的第二导电薄膜600，然后再所述第二导电薄膜600上制作所述第一漏极700即可。\n\n[0062]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0063]以上本申请各实施例所述薄膜晶体管可以用于LED背板。\n\n[0064]相应的，本申请实施例还提供了一种LED背板，其包括至少一上述任一所述的薄膜晶体管，并且所述薄膜晶体管用作为LED的驱动薄膜晶体管。\n\n[0065]在本申请实施例中，由于所述驱动薄膜晶体管具有超高的开态电流和较强的驱动能力，能够提升所述LED背板(例如Mini-LED背板)的驱动能力，并且所述驱动薄膜晶体管低漏电流的特性还能够提高LED的亮度均一性，解决TFT过高的漏电流导致的LED(例如Mini-LED)出现亮暗不均的问题，通过调节所述驱动薄膜晶体管的第二栅极900的电压还可以控制所述驱动薄膜晶体管的阈值电压，能够满足在LED背板(例如Mini-LED背板)中的应用。\n\n[0066]在本申请实施例中，所述LED可以例如为Mini-LED即指芯片尺寸介于50μm至200μm之间的LED器件。\n\n[0067]在本申请实施例中，所述LED背板可以采用2T1C、3T1C、6T1C、7T1C等电路结构。需要说明的是，由2个薄膜晶体管(TFT)和1个存储电容(C)组成的电路，根据TFT和C的数量，可以简称为2T1C；同理，由3个薄膜晶体管(TFT)和1个存储电容(C)组成的电路简称为3T1C，由6个薄膜晶体管(TFT)和1个存储电容(C)组成的电路简称为6T1C，由7个薄膜晶体管(TFT)和1个存储电容(C)组成的电路简称为7T1C。\n\n[0068]在一实施例中，请参阅图9，所述LED背板包括2T1C电路结构，所述2T1C电路结构包括：一开关薄膜晶体管(T2)，一存储电容(Cs)，一驱动薄膜晶体管(T1)和一LED。\n\n[0069]所述开关薄膜晶体管(T2)包括第三栅极、第二源极和第二漏极。所述第三栅极接入第一扫描信号(SCAN1)。所述第二源极接入数据信号(DATA)。所述开关薄膜晶体管可以例如为普通的a-Si薄膜晶体管。\n\n[0070]所述存储电容(Cs)的一端连接至所述开关薄膜晶体管(T2)的第一漏极，另一端接地。\n\n[0071]所述驱动薄膜晶体管(T1)的第一栅极连接至所述开关薄膜晶体管(T2)的第二漏极，所述驱动薄膜晶体管(T1)的第二栅极接入第二扫描信号(SCAN2)，所述驱动薄膜晶体管(T1)的第一源极与所述LED的一端，所述LED的另一端接入工作电压信号(VDD信号)，所述驱动薄膜晶体管(T1)的第一漏极接地。\n\n[0072]本实施例通过采用2T1C的电路能够减小了金属布线的复杂程度。\n\n[0073]综上所述，本申请实施例所述薄膜晶体管采用双栅极垂直沟道结构，垂直沟道的长度即为半导体层500的厚度，由于半导体层500可以做到纳米级，是传统平面型薄膜晶体管的百分之一，甚至更小，因此，能够使得薄膜晶体管拥有超高的开态电流以及更大的驱动能力，并且上下两个栅极的双栅极结构能够降低漏电流，还能够控制阈值电压。此外，本申请实施例所述薄膜晶体管用于LED背板(例如Mini-LED背板)能够提升背板的驱动能力，并且所述薄膜晶体管低漏电流的特性还能够提高LED的亮度均一性。\n\n[0074]以上对本申请实施例所提供的一种薄膜晶体管及LED背板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种薄膜晶体管及LED背板。\n\n背景技术\n\n[0002]随着高阶TV市场对画质的要求越来越高，提升显示画质成为高阶TV的一个新需求。目前8K OLED(OrganicElectroluminesence Display，有机发光二极管)受限于补偿电路、铟镓锌氧化物(indium gallium zinc oxide，IGZO)背板技术及驱动设计等问题，尚需开发。而Mini LED作为一个全新的显示技术，在亮度、功耗上较OLED和液晶显示有优势。\n\n[0003]Mini LED背光相比传统背光的区别在于：Mini LED可以通过区域调光(localdimming)实现百万级的对比度，而传统背光开启时所有的灯都会开启，在面板上不显示的区域也会受到背光照射，导致暗态不够黑，对比度低；而Mini LED可以与面板的显示画面匹配实现区域开启背光，面板上不显示的区域背光不开启，实现完全的黑态，从而达到百万级的对比度。其中主动式(Active Matrix，AM)Mini LED作为有源矩阵驱动技术，在提高显示画质的同时可以大幅降低驱动成本，因此目前正有多家企业在开发。\n\n[0004]但是由于Mini LED背板为电流驱动，因此对背板薄膜晶体管(Thin FilmTransistor，TFT)器件的驱动能力提出了更高的要求。但目前非晶硅薄膜晶体管(a-SiTFT)受限于迁移率、IGZO受限于稳定性，低温多晶硅(Low Temperature Poly-Silicon，LTPS)受限于复杂的制造工艺，成本过高，且难以满足大尺寸需求，在AM Mini-LED应用上均存在一定挑战。而且Mini-LED驱动对TFT的漏电要求也较高，TFT过高的漏电流会导致Mini-LED出现亮暗不均的问题。\n\n发明内容\n\n[0005]本申请实施例提供一种薄膜晶体管及LED背板，其拥有超高的开态电流，较低的漏电流，可以调控阈值电压，适用于LED背板。\n\n[0006]本申请实施例提供了一种薄膜晶体管，包括：\n\n[0007]第一栅极；\n\n[0008]第一绝缘层，覆盖所述第一栅极；\n\n[0009]第一源极，设在所述第一绝缘层远离所述第一栅极的一侧；\n\n[0010]半导体层，设在所述第一绝缘层远离所述第一栅极的一侧；\n\n[0011]第一漏极，设在所述第一绝缘层远离所述第一栅极的一侧；\n\n[0012]第二绝缘层，覆盖在所述第一漏极、所述半导体层和所述第一源极上；及\n\n[0013]第二栅极，设在所述第二绝缘层远离所述第一栅极一侧的表面上；\n\n[0014]其中所述第一源极、所述半导体层和所述第一漏极共同形成垂直沟道结构。\n\n[0015]可选的，在本申请一些实施例中，所述第一源极与所述半导体层靠近所述第一栅极一侧的表面电性连接，所述第一漏极与所述半导体层远离所述第一栅极一侧的表面电性连接。\n\n[0016]可选的，在本申请一些实施例中，所述第一源极通过第一导电薄膜与所述半导体层靠近所述第一栅极一侧的表面电性连接，且所述第一导电薄膜具有至少一贯穿孔。\n\n[0017]可选的，在本申请一些实施例中，所述第一导电薄膜为具有至少一贯穿孔的氧化铟锡薄膜或具有至少一贯穿孔的金属薄膜。\n\n[0018]可选的，在本申请一些实施例中，所述第一源极和所述半导体层均设在所述第一绝缘层远离所述第一栅极一侧的表面上，且所述第一导电薄膜由所述第一源极的表面延伸至所述半导体层靠近所述第一栅极一侧的表面，并至少部分覆盖所述第一源极的表面以及至少部分覆盖所述半导体层靠近所述第一栅极一侧的表面；\n\n[0019]或者，所述第一源极设在所述第一绝缘层远离所述第一栅极一侧的表面上，所述第一导电薄膜设在所述第一源极远离所述第一栅极一侧的表面上，所述半导体层设在所述第一导电薄膜远离所述第一栅极一侧的表面上。\n\n[0020]可选的，在本申请一些实施例中，所述第一漏极设在所述半导体层远离所述第一栅极一侧的表面上，并部分覆盖所述半导体层，所述第二栅极的正投影与所述半导体层的正投影至少部分重叠，且所述第二栅极的正投影与所述第一漏极的正投影无重叠。\n\n[0021]可选的，在本申请一些实施例中，所述第一漏极叠置在所述半导体层远离所述第一栅极的一侧的表面上，且所述第一漏极与所述半导体层之间设有第二导电薄膜，所述第二导电薄膜具有至少一贯穿孔。\n\n[0022]相应的，本申请实施例还提供了一种LED背板，其包括至少一上述任一所述的薄膜晶体管，并且所述薄膜晶体管用作为LED的驱动薄膜晶体管。\n\n[0023]可选的，在本申请一些实施例中，所述LED为Mini-LED。\n\n[0024]可选的，在本申请一些实施例中，所述LED背板包括2T1C电路结构，所述2T1C电路结构包括：\n\n[0025]一驱动薄膜晶体管；\n\n[0026]一开关薄膜晶体管，包括第三栅极、第二源极和第二漏极，所述第三栅极接入第一扫描信号，所述第二源极接入数据信号；\n\n[0027]一存储电容，其一端连接至所述开关薄膜晶体管的第一漏极，另一端接地；及\n\n[0028]一LED；\n\n[0029]其中，所述驱动薄膜晶体管的第一栅极连接至所述开关薄膜晶体管的第二漏极，所述驱动薄膜晶体管的第二栅极接入第二扫描信号，所述驱动薄膜晶体管的第一源极连接至所述LED的一端，所述LED的另一端接入工作电压信号，所述驱动薄膜晶体管的第一漏极接地\n\n[0030]本申请实施例所述薄膜晶体管采用双栅极垂直沟道结构，垂直沟道的长度即为半导体层的厚度，可以做到纳米级，能够使得薄膜晶体管拥有超高的开态电流以及更大的驱动能力，并且上下两个栅极的双栅极结构能够降低漏电流，还能够控制阈值电压。此外，本申请实施例所述薄膜晶体管用于LED背板(例如Mini-LED背板)能够提升所述LED背板的驱动能力，并且所述薄膜晶体管低漏电流的特性还能够提高LED的亮度均一性。\n\n附图说明\n\n[0031]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0032]图1是现有技术中传统平面结构薄膜晶体管的立体结构示意图；\n\n[0033]图2是本申请第一实施例提供的薄膜晶体管的第一种结构的立体示意图；\n\n[0034]图3是本申请第一实施例提供的薄膜晶体管的第一种结构的剖面示意图；\n\n[0035]图4是本申请第一实施例提供的薄膜晶体管的第二种结构的剖面示意图；\n\n[0036]图5是本申请第一实施例提供的薄膜晶体管的第三种结构的剖面示意图；\n\n[0037]图6是本申请第二实施例提供的薄膜晶体管的第一种结构的剖面示意图；\n\n[0038]图7是本申请第二实施例提供的薄膜晶体管的第二种结构的剖面示意图；\n\n[0039]图8是本申请第二实施例提供的薄膜晶体管的第三种结构的剖面示意图；\n\n[0040]图9是本申请实施例提供的LED背板的2T1C电路结构的电路图。\n\n具体实施方式\n\n[0041]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0042]请参阅图2至图9，本申请实施例提供一种薄膜晶体管(Thin Film Transistor，TFT)及Mini-LED背板，以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0043]请参阅图2至图5，本申请第一实施例提供了一种薄膜晶体管，具体为一种双栅极垂直沟道结构的薄膜晶体管。本申请第一实施例所述薄膜晶体管可以是N型TFT(以电子为载流子)，也可以是P型TFT(以空穴为载流子)。所述薄膜晶体管包括第一栅极100，第一绝缘层200，第一源极300，半导体层500，第一漏极700，第二绝缘层800和第二栅极900。\n\n[0044]所述第一栅极100的材质为金属材料，其可以通过物理气相沉积(PhysicalVapour Deposition，PVD)的方式制作。\n\n[0045]请参阅图2至图5，所述第一绝缘层200覆盖所述第一栅极100。所述第一绝缘层200的材质为绝缘材料。所述第一绝缘层200可以通过旋涂、化学气相沉积(Chemical VaporDeposition，CVD)或刮涂的方式制作。\n\n[0046]请参阅图2至图5，所述第一源极300、所述半导体层500和所述第一漏极700均设在所述第一绝缘层200远离所述第一栅极100的一侧，且所述第一源极300、所述半导体层500和所述第一漏极700共同形成垂直沟道结构。所述第一源极300的材质为金属材料，其可以通过旋涂或刮涂的方式制作。所述第一漏极700的材质均为金属材料，其可以通过物理气相沉积或蒸镀的方式制作。所述半导体层500的材质可以为有机半导体材料，其可以通过旋涂或刮涂的方式制作；所述半导体层500的材质也可以为无机半导体材料，其可以通过化学气相沉积及黄光制程制作。\n\n[0047]具体的，所述第一源极300与所述半导体层500靠近所述第一栅极100一侧的表面电性连接，所述第一漏极700与所述半导体层500远离所述第一栅极100一侧的表面电性连接。这样使得所述第一源极300、所述半导体层500和所述第一漏极700共同形成垂直沟道结构。\n\n[0048]在一实施例中，请参阅图2至图5，所述第一源极300通过第一导电薄膜400与所述半导体层500靠近所述第一栅极100一侧的表面电性连接，且所述第一导电薄膜400具有至少一贯穿孔。所述第一导电薄膜400具有贯穿孔，能够使所述第一栅极100的电场穿过所述贯穿孔调控所述半导体层500中的载流子，避免所述第一栅极100的电场被整层金属的所述第一源极300屏蔽。需要说明的是，所述第一导电薄膜400的贯穿孔是指在所述第一导电薄膜400厚度方向上(与所述第一栅极100垂直的方向)贯穿所述第一导电薄膜400，所述贯穿孔的数量可以是一个也可以是多个(例如两个、三个或以上)，所述贯穿孔的形状可以是规则图形(例如圆形、长方形或多边形)，也可以是不规则的形状，所述贯穿孔的尺寸包括但不限于为纳米级，当所述贯穿孔的数量为三个或三个以上时，它们可以是规则排列，也可以是不规则排列。所述第一导电薄膜400例如可以为具有至少一贯穿孔的氧化铟锡(ITO)薄膜，其可以通过在ITO薄膜上制作很多纳米小孔的方式制备，其中纳米小孔贯穿ITO薄膜的远离所述第一栅极100一侧的表面和靠近所述第一栅极100一侧的表面。所述第一导电薄膜400还可以例如为具有至少一贯穿孔的金属薄膜。所述金属薄膜的材质例如为金、银、铝等。在一实施例中，所述第一导电薄膜400为银纳米线薄膜。由于所述银纳米线的形态呈线形，因此所述银纳米线薄膜中很多银纳米线交叠在一起形成网状结构或类似网状的结构，使得所述第一栅极100的电场能够穿过所述银纳米线薄膜以调控所述半导体层500中的载流子。所述银纳米线薄膜可以通过旋涂含有银纳米线的溶液的方式制备，也可以通过自组装的方式制作。\n\n[0049]示例性的，请参阅图3和图4，所述第一源极300与所述半导体层500可以是同层设置(非叠置的)，具体的，所述第一源极300和所述半导体层500均设在所述第一绝缘层200远离所述第一栅极100一侧的表面上，且所述第一导电薄膜400由所述第一源极300的表面延伸至所述半导体层500靠近所述第一栅极100一侧的表面，并至少部分覆盖所述第一源极300的表面以及至少部分覆盖所述半导体层500靠近所述第一栅极100一侧的表面(即所述半导体层500的正投影与所述第一导电薄膜400的正投影有重叠)。可以理解的是，请参阅图3，所述第一导电薄膜400的一部分可以是至少部分覆盖在所述第一源极300远离所述第一栅极100一侧的表面上，此种情况下，所述第一导电薄膜400一部分设在所述第一源极300的上表面及侧壁上，另一部分设在所述第一绝缘层200上，在制作时，可以先在所述第一绝缘层200上制备所述第一源极300，再在所述第一源极300和所述第一绝缘层200上制备第一导电薄膜400(例如为银纳米线薄膜)，然后再在所述第一导电薄膜400上制备半导体层500(所述半导体层500与所述第一源极300无叠置)，需要说明的是，所述第一导电薄膜400可以是部分覆盖所述第一源极300远离所述第一栅极100一侧的表面，也可以是全部覆盖所述第一源极300远离所述第一栅极100一侧的表面，同样的，所述第一导电薄膜400可以是部分覆盖所述半导体层500靠近所述第一栅极100一侧的表面，也可以是全部覆盖所述半导体层500靠近所述第一栅极100一侧的表面；请参阅图4，所述第一导电薄膜400也可以是至少部分覆盖在所述第一源极300靠近所述第一栅极100一侧的表面上(即所述第一源极300的正投影与所述第一导电薄膜400的正投影有重叠)，此种情况下，所述第一导电薄膜400可以直接设在所述第一绝缘层200上，而所述第一源极300和所述半导体层500则设在所述第一导电薄膜400上，在制作时，可以先在所述第一绝缘层200上制备所述第一导电薄膜400，然后在所述第一导电薄膜400上制备所述第一源极300和所述半导体层500，需要说明的是，所述第一导电薄膜400可以是部分覆盖所述第一源极300靠近所述第一栅极100一侧的表面，也可以是全部覆盖所述第一源极300靠近所述第一栅极100一侧的表面，同样的，所述第一导电薄膜400可以是部分覆盖所述半导体层500靠近所述第一栅极100一侧的表面，也可以是全部覆盖所述半导体层500靠近所述第一栅极100一侧的表面。\n\n[0050]示例性的，请参阅图5，所述第一源极300与所述半导体层500还可以是叠置的，所述第一源极300设在所述第一绝缘层200远离所述第一栅极100一侧的表面上，所述第一导电薄膜400设在所述第一源极300远离所述第一栅极100一侧的表面上，所述半导体层500设在所述第一导电薄膜400远离所述第一栅极100一侧的表面上，即所述第一源极300、所述第一导电薄膜400和所述半导体层500依次叠置。在本实施例中，由于所述第一导电薄膜400具有贯穿孔，使得所述第一栅极100的电场能够透过所述贯穿孔调控所述半导体层500中的载流子，而不被所述第一源极300屏蔽。\n\n[0051]现有技术较常采用的是传统平面型薄膜晶体管，请参阅图1，传统平面型薄膜晶体管包括栅极10，电介质绝缘层20、源极30、沟道层40和漏极50，其中所述源极30、所述漏极50和沟道层40在同一层上水平设置，载流子传输方向或电流方向位于水平传输(如图1中所示的X方向)，由于传统平面型薄膜晶体管受限于曝光机精度，其沟道长度最短只能做到微米级(例如大约10微米)，因而导致平面型薄膜晶体管输出电流不高，驱动能力受限。\n\n[0052]本申请实施例所述薄膜晶体管采用垂直沟道结构，载流子传输方向或电流方向为垂直传输(如图3至图5中所示的Y方向)，垂直沟道的长度即为半导体层500的厚度，而半导体层500可以做到纳米级，是传统平面型薄膜晶体管的百分之一甚至更小，因而本申请实施例所述薄膜晶体管拥有超高的开态电流以及更大的驱动能力。\n\n[0053]请参阅图2至图5所示，所述第一漏极700设在所述半导体层500远离所述第一栅极100一侧的表面上，并部分覆盖所述半导体层500。在制作时，直接在所述半导体层500上制作所述第一漏极700，图案化使所述半导体层500从所述第一漏极700中部分暴露出来。\n\n[0054]请参阅图2至图5所示，所述第二绝缘层800覆盖在所述第一漏极700、所述半导体层500和所述第一源极300上。所述第二绝缘层800的材质为绝缘材料，其可以通过旋涂、化学气相沉积和刮涂的方式制作。\n\n[0055]请参阅图2至图5所示，所述第二栅极900设在所述第二绝缘层800远离所述第一栅极100一侧的表面上。所述第二栅极900的材质为金属材料，其可以通过物理气相沉积的方式制作。具体的，所述第二栅极900的正投影与所述半导体层500的正投影至少部分重叠，且所述第二栅极900的正投影与所述第一漏极700的正投影无重叠，即：使所述第二栅极900的位置与所述半导体层500从所述第一漏极700中暴露的部分相对应，进而使所述第二栅极900的电场能够到达所述半导体层500并调控所述半导体层500的载流子，而避免被所述第一漏极700屏蔽。\n\n[0056]本申请实施例所述薄膜晶体管采用上下两个栅极(即所述第一栅极100和所述第二栅极900)的双栅结构，不仅能够增强栅极对载流子的控制能力，降低漏电流，还能够控制阈值电压。当所述薄膜晶体管为N型时，所述薄膜晶体管的工作原理为：(1)开启阶段：所述第一栅极100给一个正的高电位开启电压，在所述半导体层500与所述第一导电膜层的界面处产生电子，所述薄膜晶体管开启；所述第二栅极900给一个负的电压，进一步使得所述半导体中的电子向沟道处聚集，增加沟道中的载流子，增加开态电流；(2)关闭阶段(主要为空穴参与导电)：所述第一栅极100给一个负向的电压，沟道界面处半导体层500的载流子耗尽，电子向背沟道移动(所述半导体层500与所述第二绝缘层800的界面)，空穴向沟道移动，此时沟道中仅有少子空穴参与导电；所述第二栅极900同样为负电压，背沟道中的空穴向前沟道(所述半导体层500与所述第一绝缘层200的界面)移动，减少了向沟道移动的空穴数量，从而降低漏电流(off电流)。\n\n[0057]当所述薄膜晶体管为P型时，所述薄膜晶体管的工作原理为：(1)开启阶段：所述第一栅极100给一个负的高电位开启电压，在所述半导体层500与所述第一导电膜层的界面处产生空穴，所述薄膜晶体管开启；所述第二栅极900给一个正的电压，进一步使得所述半导体中的空穴向沟道处聚集，增加沟道中的载流子，增加开态电流；(2)关闭阶段(主要为电子参与导电)：所述第一栅极100给一个正向的电压，沟道界面处半导体层500的载流子耗尽，空穴向背沟道移动(所述半导体层500与所述第二绝缘层800的界面)，电子向沟道移动，此时沟道中仅有少数电子参与导电；所述第二栅极900同样为正电压，背沟道中的电子向前沟道(所述半导体层500与所述第一绝缘层200的界面)移动，可以减少向沟道移动的电子数量，从而降低漏电流(off电流)。\n\n[0058]请参阅图6至图8，本申请第二实施例的薄膜晶体管也为双栅极垂直沟道结构的薄膜晶体管，其可以是N型TFT(以电子为载流子)，也可以是P型TFT(以空穴为载流子)，其结构相似于本申请第一实施例，并大致沿用相同元件名称及图号，但其与第一实施例的区别在于：第二实施例的薄膜晶体管进一步增设第二导电薄膜600。具体的，所述第一漏极700叠置在所述半导体层500远离所述第一栅极100的一侧的表面上，且所述第一漏极700与所述半导体层500之间设有第二导电薄膜600，所述第二导电薄膜600具有至少一贯穿孔。本申请第二实施例中，所述第二导电薄膜600具有贯穿孔，能够使得所述第二栅极900的电场能够穿过所述贯穿孔调控所述半导体层500中的载流子，避免所述第二栅极900的电场被整层金属的所述第一漏极700屏蔽。\n\n[0059]需要说明的是，所述第二导电薄膜600的贯穿孔是指在所述第二导电薄膜600厚度方向上(与所述第一栅极100垂直的方向)贯穿所述第二导电薄膜600，所述贯穿孔的数量可以是一个也可以是多个(例如两个、三个或以上)，所述贯穿孔的形状可以是规则图形(例如圆形、长方形或多边形)，也可以是不规则的形状，所述贯穿孔的尺寸包括但不限于为纳米级，当所述贯穿孔的数量为三个或三个以上时，它们可以是规则排列，也可以是不规则排列。所述第二导电薄膜600与所述第一导电薄膜400的材质可以是相同的，也可以是不同的；所述第二导电薄膜600与所述第一导电薄膜400不会将所述第一源极300与所述第一漏极700短接。所述第二导电薄膜600例如可以为具有至少一贯穿孔的氧化铟锡(ITO)薄膜，其可以通过在ITO薄膜上制作很多纳米小孔的方式制备，其中纳米小孔贯穿ITO薄膜的远离所述第一栅极100一侧的表面和靠近所述第一栅极100一侧的表面。所述第二导电薄膜600还可以为具有至少一贯穿孔的金属薄膜，所述金属薄膜的材质例如为金、银、铝等。在一实施例中，所述第二导电薄膜600为银纳米线薄膜。\n\n[0060]在本实施例中，与第一实施例相同，所述第一源极300与所述半导体层500可以是非叠置的(请参阅图6和图7)，也可以叠置的(请参阅图8)。相关描述可以参考第一实施例。\n\n[0061]本实施例通过增设所述第二导电薄膜600可以使得第二栅极900的位置不受所述第一漏极700的限制，使得所述第二栅极900的电场能够穿过所述第二导电薄膜600的贯穿孔以调控所述半导体层500中的载流子，而避免所述第二栅极900的电场被由整层金属制成的所述第一漏极700所屏蔽。因此本实施例无需因防止所述第二栅极900的电场被所述第一漏极700屏蔽而专门将所述半导体层500从所述第一漏极700中部分暴露出来，而所述第一漏极700则可以是完全覆盖所述半导体层500的，简化了制作工艺。在制作时，在所述半导体层500上制备一层具有贯穿孔的第二导电薄膜600，然后再所述第二导电薄膜600上制作所述第一漏极700即可。\n\n[0062]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0063]以上本申请各实施例所述薄膜晶体管可以用于LED背板。\n\n[0064]相应的，本申请实施例还提供了一种LED背板，其包括至少一上述任一所述的薄膜晶体管，并且所述薄膜晶体管用作为LED的驱动薄膜晶体管。\n\n[0065]在本申请实施例中，由于所述驱动薄膜晶体管具有超高的开态电流和较强的驱动能力，能够提升所述LED背板(例如Mini-LED背板)的驱动能力，并且所述驱动薄膜晶体管低漏电流的特性还能够提高LED的亮度均一性，解决TFT过高的漏电流导致的LED(例如Mini-LED)出现亮暗不均的问题，通过调节所述驱动薄膜晶体管的第二栅极900的电压还可以控制所述驱动薄膜晶体管的阈值电压，能够满足在LED背板(例如Mini-LED背板)中的应用。\n\n[0066]在本申请实施例中，所述LED可以例如为Mini-LED即指芯片尺寸介于50μm至200μm之间的LED器件。\n\n[0067]在本申请实施例中，所述LED背板可以采用2T1C、3T1C、6T1C、7T1C等电路结构。需要说明的是，由2个薄膜晶体管(TFT)和1个存储电容(C)组成的电路，根据TFT和C的数量，可以简称为2T1C；同理，由3个薄膜晶体管(TFT)和1个存储电容(C)组成的电路简称为3T1C，由6个薄膜晶体管(TFT)和1个存储电容(C)组成的电路简称为6T1C，由7个薄膜晶体管(TFT)和1个存储电容(C)组成的电路简称为7T1C。\n\n[0068]在一实施例中，请参阅图9，所述LED背板包括2T1C电路结构，所述2T1C电路结构包括：一开关薄膜晶体管(T2)，一存储电容(Cs)，一驱动薄膜晶体管(T1)和一LED。\n\n[0069]所述开关薄膜晶体管(T2)包括第三栅极、第二源极和第二漏极。所述第三栅极接入第一扫描信号(SCAN1)。所述第二源极接入数据信号(DATA)。所述开关薄膜晶体管可以例如为普通的a-Si薄膜晶体管。\n\n[0070]所述存储电容(Cs)的一端连接至所述开关薄膜晶体管(T2)的第一漏极，另一端接地。\n\n[0071]所述驱动薄膜晶体管(T1)的第一栅极连接至所述开关薄膜晶体管(T2)的第二漏极，所述驱动薄膜晶体管(T1)的第二栅极接入第二扫描信号(SCAN2)，所述驱动薄膜晶体管(T1)的第一源极与所述LED的一端，所述LED的另一端接入工作电压信号(VDD信号)，所述驱动薄膜晶体管(T1)的第一漏极接地。\n\n[0072]本实施例通过采用2T1C的电路能够减小了金属布线的复杂程度。\n\n[0073]综上所述，本申请实施例所述薄膜晶体管采用双栅极垂直沟道结构，垂直沟道的长度即为半导体层500的厚度，由于半导体层500可以做到纳米级，是传统平面型薄膜晶体管的百分之一，甚至更小，因此，能够使得薄膜晶体管拥有超高的开态电流以及更大的驱动能力，并且上下两个栅极的双栅极结构能够降低漏电流，还能够控制阈值电压。此外，本申请实施例所述薄膜晶体管用于LED背板(例如Mini-LED背板)能够提升背板的驱动能力，并且所述薄膜晶体管低漏电流的特性还能够提高LED的亮度均一性。\n\n[0074]以上对本申请实施例所提供的一种薄膜晶体管及LED背板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10945, 23999, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种量子点LED封装器件及其制备方法。\n\n背景技术\n\n[0002]量子点(英文全称：Quantum Dot，简称QD)电视自上市至今，得到了广泛的好评，由于量子点材料的诸多优异性能，使得LCD和量子点背光源相结合的新型LCD显示器有着广色域，高色饱和度、色纯度的优异显示效果，其色彩和显示质量逼近甚至有超过OLED显示器的趋势。\n\n[0003]目前量子点电视为量子点背光源加LCD显示面板的形式，其中量子点背光源多采用蓝光LED芯片加量子点膜的光学结构，但是这种方式的背光源蓝光成分高，与当今健康显示的潮流背道而驰，并且制备大面积的量子点薄膜，工艺难度高，成本极高，厚度均匀性难以把控，局部会形成大量不均匀的淬灭中心，影响显示效果。比较理想的量子点背光源是将量子点注入进LED灯珠中，替代荧光粉的角色，这种方式量子点材料用料少，成本低，但是依旧采用蓝光芯片，蓝光问题依旧存在，并且依旧存在成本高、光效低的问题。\n\n[0004]因此，需要寻求一种新型的显示面板以解决上述问题。\n\n发明内容\n\n[0005]本发明的目的是提供一种量子点LED封装器件及其制备方法，其能够解决现有量子点LED封装器件中存在的蓝光成分高，降低用户体验，大面积的量子点薄膜制备工艺难度高，成本高，厚度均匀性难以把控，局部形成大量不均匀的淬灭中心，影响显示效果等问题。\n\n[0006]为了解决上述问题，本发明提供了一种量子点LED封装器件，其包括：基板；支架，安装于所述基板的一侧的表面上；电路层，设置于所述基板的一侧的表面上，且位于所述支架内；LED芯片，安装于所述电路层远离所述基板的一侧的表面上，且位于所述支架内；微透镜，安装于所述LED芯片远离所述基板的一侧，且位于所述支架内；所述微透镜远离所述基板的一侧的表面具有至少一个凹槽，所述凹槽内填充有量子点材料；滤光层，安装于所述微透镜远离所述基板的一侧的表面上，且位于所述支架内；以及消光层，位于所述滤光层的周围，且位于所述支架内。\n\n[0007]进一步的，所述凹槽的俯视图为六边形、正方形、三角形及圆形中的一种。\n\n[0008]进一步的，所述凹槽的截面的形状为倒梯形。\n\n[0009]进一步的，所述微透镜的材质为硅胶或者聚甲基丙烯酸甲酯。\n\n[0010]进一步的，所述滤光层远离所述基板的一侧的表面为粗糙面。\n\n[0011]进一步的，所述粗糙面的粗糙度Ra值范围为5um-10um。\n\n[0012]进一步的，所述滤光层内设有至少一个散射颗粒。\n\n[0013]进一步的，所述散射颗粒粒径的粒径范围为2um-4um。\n\n[0014]进一步的，所述电路层、所述LED芯片、所述支架、以及所述微透镜围城一腔室，所述腔室内填充有惰性气体或者惰性气体的气凝胶。\n\n[0015]为了解决上述问题，本发明还提供了一种量子点LED封装器件的制备方法，其包括以下步骤：提供一基板，在所述基板的一侧的表面上安装支架；在所述基板的一侧的表面上制作电路层，所述电路层位于所述支架内；在所述电路层远离所述基板一侧的表面上安装LED芯片，所述LED芯片位于所述支架内；在所述LED芯片远离所述基板的一侧安装微透镜，所述微透镜位于所述支架内；所述微透镜远离所述基板的一侧的表面具有至少一个凹槽，所述凹槽内填充有量子点材料；在所述微透镜远离所述基板的一侧安装滤光层，所述滤光层位于所述支架内；在所述滤光层周围设置消光层，所述消光层位于所述支架内。\n\n[0016]本发明的优点是：本发明涉及一种量子点LED封装器件及其制备方法，在微透镜远离基板的一侧安装滤光层，进而降低蓝光强度，将蓝光降低到健康值；将滤光层远离基板的一侧的表面设置为粗糙面，实现均匀出光的效果；在滤光层中增加散射颗粒，用以增加穿过微透镜的光线的耦合程度，对穿过微透镜的光线进行散射均光；在滤光层的周围设置消光层，用以遮挡未能被量子点材料吸收的LED蓝光。\n\n附图说明\n\n[0017]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0018]图1是本发明的量子点LED封装器件的结构示意图；\n\n[0019]图2是本发明的微透镜的凹槽的俯视图；\n\n[0020]图3是本发明的量子点LED封装器件的制备步骤图。\n\n[0021]附图标记说明：\n\n[0022]100、量子点LED封装器件；\n\n[0023]1、基板； 2、支架；\n\n[0024]3、电路层； 4、LED芯片；\n\n[0025]5、微透镜； 6、滤光层；\n\n[0026]7、消光层； 8、量子点材料；\n\n[0027]9、惰性气体；\n\n[0028]51、凹槽； 61、散射颗粒。\n\n具体实施方式\n\n[0029]以下结合说明书附图详细说明本发明的优选实施例，以向本领域中的技术人员完整介绍本发明的技术内容，以举例证明本发明可以实施，使得本发明公开的技术内容更加清楚，使得本领域的技术人员更容易理解如何实施本发明。然而本发明可以通过许多不同形式的实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例，下文实施例的说明并非用来限制本发明的范围。\n\n[0030]本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是附图中的方向，本文所使用的方向用语是用来解释和说明本发明，而不是用来限定本发明的保护范围。\n\n[0031]在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。此外，为了便于理解和描述，附图所示的每一组件的尺寸和厚度是任意示出的，本发明并没有限定每个组件的尺寸和厚度。\n\n[0032]如图1所示，本实施例提供了一种量子点LED封装器件100。所述量子点LED封装器件100包括：基板1、支架2、电路层3、LED芯片4、微透镜5、滤光层6以及消光层7。\n\n[0033]其中，所述基板1的材质为热沉材料。所述热沉材料可以为金属，例如：铜或铝。所述热沉材料还可以为高导热率的塑料。基板1主要起导热及散热的作用。\n\n[0034]其中，支架2安装于所述基板1的一侧的表面上。本实施例中，所述支架2与所述基板1一体化加工成型，固定于所述基板1上。所述支架2的材质可以为金属，例如：铜或铝。所述支架2的材质还可以为高导热率的塑料。\n\n[0035]在其他实施例中，所述支架2还可以通过螺丝固定、焊接固定等方式固定安装于所述基板1上，本实施例对支架2与基板1的固定方式不进行限定。所述支架2的材质还可以为陶瓷。\n\n[0036]其中，电路层3设置于所述基板1的一侧的表面上，且位于所述支架2内。所述电路层3主要用以实现LED芯片4与外界电路之间的电连接。\n\n[0037]其中，LED芯片4安装于所述电路层3远离所述基板1的一侧的表面上，且位于所述支架2内。本实施例中所述LED芯片4为蓝光LED芯片。所述LED芯片4的长度L的范围为0.1mm-2mm。本实施例中，所述LED芯片4的长度L＝1mm，其他实施例中，所述LED芯片4的长度L为0.5mm、1.5mm或者1.8mm。\n\n[0038]其中，微透镜5安装于所述LED芯片4远离所述基板1的一侧，且位于所述支架2内。所述微透镜5的外边缘形状与所述支架2的内边缘形状相同。本实施例中，所述支架2的内边缘形状为圆形，所述微透镜5的边缘形状为圆形。其他实施例中，当所述支架2的内边缘形状为方形时，所述微透镜的边缘形状为方形。微透镜5主要是用于汇聚LED芯片4产生的光线，提高光效，增加LED芯片4产生的光线的利用率。\n\n[0039]其中，所述微透镜5的材质为硅胶或者聚甲基丙烯酸甲酯(英文全称：polymethylmethacrylate，简称PMMA)。PMMA是一种高分子聚合物，又称作亚克力或有机玻璃，具有高透明度，低价格，易于机械加工等优点。\n\n[0040]其中，所述微透镜5的厚度H范围为1mm-2mm。本实施例优选的，所述微透镜5的厚度H为1.5mm，其他实施例中，所述微透镜5的厚度H可以为1.2mm、1.4mm、1.6mm或者1.8mm。\n\n[0041]如图1所示，所述微透镜5远离所述基板1的一侧的表面具有至少一个凹槽51，所述凹槽内填充有量子点材料8。\n\n[0042]如图2所示，本实施例中，所述凹槽51的俯视图为六边形。其他实施例中，所述凹槽51的俯视图还可以为正方形、三角形或圆形。\n\n[0043]如图1所示，本实施例中，所述凹槽51的截面的形状为倒梯形。其中，所述凹槽51的槽底宽D为LED芯片4的长度L的1/8，即D＝(1/8)L。所述凹槽51的槽深h为槽底宽D的1/4，即h＝(1/4)D。相邻两个所述凹槽51的槽底之间的间距d为槽深h的3倍，即d＝3h。所述凹槽51的侧壁与槽底之间的夹角为135°。例如：本实施例中的L＝1mm，D＝0.125mm，h＝0.03mm，d＝0.09mm。\n\n[0044]其中，所述微透镜5上的凹槽51的尺寸相同，相邻两个凹槽51之间的间距相同。由此凹槽51可以为量子点材料8提供均一的填充空间和支撑底座，可以满足量子点材料8均匀且少量的填充，并且由于均匀的涂覆在微透镜5表面，因此量子点材料8受光均匀，即使局部量子点材料8凝聚态产生淬灭中心，这一部分引起的消光也会通过滤光层6的均光效果得到弥补，保证出光的均匀。\n\n[0045]其中，滤光层6安装于所述微透镜5远离所述基板1的一侧的表面上，且位于所述支架2内。所述滤光层6的主体材料为硅胶、PC或PMMA等。所述滤光层6的主体材料中掺杂有蓝光吸收剂，例如：蓝光吸收剂H15。所述滤光层6主要用于降低蓝光强度，将蓝光降低到健康值，防止影响用户体验。\n\n[0046]所述滤光层6远离所述基板1的一侧的表面为粗糙面。所述粗糙面的粗糙度Ra值范围为5um-10um。由此可以实现均匀出光的效果。\n\n[0047]所述滤光层6内设有至少一个散射颗粒61。所述散射颗粒61粒径均匀，散射颗粒61的粒径范围为2um-4um。本实施例中，所述散射颗粒61的粒径为3um，其他实施例中，所述散射颗粒61的粒径可以为2um、2.5um、3.5um或4um。所述散射颗粒61主要用以增加穿过微透镜5的光线的耦合程度，对穿过微透镜5的光线进行散射均光。\n\n[0048]其中，消光层7位于所述滤光层6的周围，且位于所述支架2内。所述消光层7主要用于遮挡未能被量子点材料8吸收的LED蓝光，消除滤光层6周围的散光现象。\n\n[0049]如图1所示，所述电路层3、所述LED芯片4、所述支架2、以及所述微透镜5围城一腔室。本实施例中，所述腔室内填充有惰性气体9，例如：氮气、或氩气。在腔室内填充惰性气体9主要是用于提高量子点LED封装器件100在使用过程中的可靠性。所述其他实施例中，所述腔室内可以填充惰性气体的气凝胶。事实上，所述微透镜5上设有一通孔(图未示)，所述惰性气体9主要通过通孔灌入所述腔室内。\n\n[0050]如图3所示，本实施例还提供了一种量子点LED封装器件100的制备方法，其包括以下步骤：S1，提供一基板1，在所述基板1的一侧的表面上安装支架2；S2，在所述基板1的一侧的表面上制作电路层3，所述电路层3位于所述支架2内；S3，利用焊接的方式在所述电路层3远离所述基板1一侧的表面上安装LED芯片4，所述LED芯片4位于所述支架2内；S4，在所述LED芯片4远离所述基板1的一侧安装微透镜5，所述微透镜5位于所述支架2内；所述微透镜5远离所述基板1的一侧的表面具有至少一个凹槽51，利用刮涂或者喷墨打印的方式在所述凹槽51内填充量子点材料8；S5，通过密封剂将所述微透镜5与所述支架2进行密封，所述电路层3、所述LED芯片4、所述支架2、以及所述微透镜5围城一腔室，然后利用通孔向所述腔室内填充惰性气体9，然后将通孔进行密封；S6，采用喷涂等方式在所述微透镜5远离所述基板1的一侧制作滤光层6，所述滤光层6位于所述支架2内；S7，采用喷涂等方式在所述滤光层6周围设置消光层7，所述消光层7位于所述支架2内。\n\n[0051]其中，所述基板1与所述支架2可以采用一体化加工成型的方式制备形成。以上对本申请所提供的一种量子点LED封装器件及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种量子点LED封装器件及其制备方法。\n\n背景技术\n\n[0002]量子点(英文全称：Quantum Dot，简称QD)电视自上市至今，得到了广泛的好评，由于量子点材料的诸多优异性能，使得LCD和量子点背光源相结合的新型LCD显示器有着广色域，高色饱和度、色纯度的优异显示效果，其色彩和显示质量逼近甚至有超过OLED显示器的趋势。\n\n[0003]目前量子点电视为量子点背光源加LCD显示面板的形式，其中量子点背光源多采用蓝光LED芯片加量子点膜的光学结构，但是这种方式的背光源蓝光成分高，与当今健康显示的潮流背道而驰，并且制备大面积的量子点薄膜，工艺难度高，成本极高，厚度均匀性难以把控，局部会形成大量不均匀的淬灭中心，影响显示效果。比较理想的量子点背光源是将量子点注入进LED灯珠中，替代荧光粉的角色，这种方式量子点材料用料少，成本低，但是依旧采用蓝光芯片，蓝光问题依旧存在，并且依旧存在成本高、光效低的问题。\n\n[0004]因此，需要寻求一种新型的显示面板以解决上述问题。\n\n发明内容\n\n[0005]本发明的目的是提供一种量子点LED封装器件及其制备方法，其能够解决现有量子点LED封装器件中存在的蓝光成分高，降低用户体验，大面积的量子点薄膜制备工艺难度高，成本高，厚度均匀性难以把控，局部形成大量不均匀的淬灭中心，影响显示效果等问题。\n\n[0006]为了解决上述问题，本发明提供了一种量子点LED封装器件，其包括：基板；支架，安装于所述基板的一侧的表面上；电路层，设置于所述基板的一侧的表面上，且位于所述支架内；LED芯片，安装于所述电路层远离所述基板的一侧的表面上，且位于所述支架内；微透镜，安装于所述LED芯片远离所述基板的一侧，且位于所述支架内；所述微透镜远离所述基板的一侧的表面具有至少一个凹槽，所述凹槽内填充有量子点材料；滤光层，安装于所述微透镜远离所述基板的一侧的表面上，且位于所述支架内；以及消光层，位于所述滤光层的周围，且位于所述支架内。\n\n[0007]进一步的，所述凹槽的俯视图为六边形、正方形、三角形及圆形中的一种。\n\n[0008]进一步的，所述凹槽的截面的形状为倒梯形。\n\n[0009]进一步的，所述微透镜的材质为硅胶或者聚甲基丙烯酸甲酯。\n\n[0010]进一步的，所述滤光层远离所述基板的一侧的表面为粗糙面。\n\n[0011]进一步的，所述粗糙面的粗糙度Ra值范围为5um-10um。\n\n[0012]进一步的，所述滤光层内设有至少一个散射颗粒。\n\n[0013]进一步的，所述散射颗粒粒径的粒径范围为2um-4um。\n\n[0014]进一步的，所述电路层、所述LED芯片、所述支架、以及所述微透镜围城一腔室，所述腔室内填充有惰性气体或者惰性气体的气凝胶。\n\n[0015]为了解决上述问题，本发明还提供了一种量子点LED封装器件的制备方法，其包括以下步骤：提供一基板，在所述基板的一侧的表面上安装支架；在所述基板的一侧的表面上制作电路层，所述电路层位于所述支架内；在所述电路层远离所述基板一侧的表面上安装LED芯片，所述LED芯片位于所述支架内；在所述LED芯片远离所述基板的一侧安装微透镜，所述微透镜位于所述支架内；所述微透镜远离所述基板的一侧的表面具有至少一个凹槽，所述凹槽内填充有量子点材料；在所述微透镜远离所述基板的一侧安装滤光层，所述滤光层位于所述支架内；在所述滤光层周围设置消光层，所述消光层位于所述支架内。\n\n[0016]本发明的优点是：本发明涉及一种量子点LED封装器件及其制备方法，在微透镜远离基板的一侧安装滤光层，进而降低蓝光强度，将蓝光降低到健康值；将滤光层远离基板的一侧的表面设置为粗糙面，实现均匀出光的效果；在滤光层中增加散射颗粒，用以增加穿过微透镜的光线的耦合程度，对穿过微透镜的光线进行散射均光；在滤光层的周围设置消光层，用以遮挡未能被量子点材料吸收的LED蓝光。\n\n附图说明\n\n[0017]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0018]图1是本发明的量子点LED封装器件的结构示意图；\n\n[0019]图2是本发明的微透镜的凹槽的俯视图；\n\n[0020]图3是本发明的量子点LED封装器件的制备步骤图。\n\n[0021]附图标记说明：\n\n[0022]100、量子点LED封装器件；\n\n[0023]1、基板； 2、支架；\n\n[0024]3、电路层； 4、LED芯片；\n\n[0025]5、微透镜； 6、滤光层；\n\n[0026]7、消光层； 8、量子点材料；\n\n[0027]9、惰性气体；\n\n[0028]51、凹槽； 61、散射颗粒。\n\n具体实施方式\n\n[0029]以下结合说明书附图详细说明本发明的优选实施例，以向本领域中的技术人员完整介绍本发明的技术内容，以举例证明本发明可以实施，使得本发明公开的技术内容更加清楚，使得本领域的技术人员更容易理解如何实施本发明。然而本发明可以通过许多不同形式的实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例，下文实施例的说明并非用来限制本发明的范围。\n\n[0030]本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是附图中的方向，本文所使用的方向用语是用来解释和说明本发明，而不是用来限定本发明的保护范围。\n\n[0031]在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。此外，为了便于理解和描述，附图所示的每一组件的尺寸和厚度是任意示出的，本发明并没有限定每个组件的尺寸和厚度。\n\n[0032]如图1所示，本实施例提供了一种量子点LED封装器件100。所述量子点LED封装器件100包括：基板1、支架2、电路层3、LED芯片4、微透镜5、滤光层6以及消光层7。\n\n[0033]其中，所述基板1的材质为热沉材料。所述热沉材料可以为金属，例如：铜或铝。所述热沉材料还可以为高导热率的塑料。基板1主要起导热及散热的作用。\n\n[0034]其中，支架2安装于所述基板1的一侧的表面上。本实施例中，所述支架2与所述基板1一体化加工成型，固定于所述基板1上。所述支架2的材质可以为金属，例如：铜或铝。所述支架2的材质还可以为高导热率的塑料。\n\n[0035]在其他实施例中，所述支架2还可以通过螺丝固定、焊接固定等方式固定安装于所述基板1上，本实施例对支架2与基板1的固定方式不进行限定。所述支架2的材质还可以为陶瓷。\n\n[0036]其中，电路层3设置于所述基板1的一侧的表面上，且位于所述支架2内。所述电路层3主要用以实现LED芯片4与外界电路之间的电连接。\n\n[0037]其中，LED芯片4安装于所述电路层3远离所述基板1的一侧的表面上，且位于所述支架2内。本实施例中所述LED芯片4为蓝光LED芯片。所述LED芯片4的长度L的范围为0.1mm-2mm。本实施例中，所述LED芯片4的长度L＝1mm，其他实施例中，所述LED芯片4的长度L为0.5mm、1.5mm或者1.8mm。\n\n[0038]其中，微透镜5安装于所述LED芯片4远离所述基板1的一侧，且位于所述支架2内。所述微透镜5的外边缘形状与所述支架2的内边缘形状相同。本实施例中，所述支架2的内边缘形状为圆形，所述微透镜5的边缘形状为圆形。其他实施例中，当所述支架2的内边缘形状为方形时，所述微透镜的边缘形状为方形。微透镜5主要是用于汇聚LED芯片4产生的光线，提高光效，增加LED芯片4产生的光线的利用率。\n\n[0039]其中，所述微透镜5的材质为硅胶或者聚甲基丙烯酸甲酯(英文全称：polymethylmethacrylate，简称PMMA)。PMMA是一种高分子聚合物，又称作亚克力或有机玻璃，具有高透明度，低价格，易于机械加工等优点。\n\n[0040]其中，所述微透镜5的厚度H范围为1mm-2mm。本实施例优选的，所述微透镜5的厚度H为1.5mm，其他实施例中，所述微透镜5的厚度H可以为1.2mm、1.4mm、1.6mm或者1.8mm。\n\n[0041]如图1所示，所述微透镜5远离所述基板1的一侧的表面具有至少一个凹槽51，所述凹槽内填充有量子点材料8。\n\n[0042]如图2所示，本实施例中，所述凹槽51的俯视图为六边形。其他实施例中，所述凹槽51的俯视图还可以为正方形、三角形或圆形。\n\n[0043]如图1所示，本实施例中，所述凹槽51的截面的形状为倒梯形。其中，所述凹槽51的槽底宽D为LED芯片4的长度L的1/8，即D＝(1/8)L。所述凹槽51的槽深h为槽底宽D的1/4，即h＝(1/4)D。相邻两个所述凹槽51的槽底之间的间距d为槽深h的3倍，即d＝3h。所述凹槽51的侧壁与槽底之间的夹角为135°。例如：本实施例中的L＝1mm，D＝0.125mm，h＝0.03mm，d＝0.09mm。\n\n[0044]其中，所述微透镜5上的凹槽51的尺寸相同，相邻两个凹槽51之间的间距相同。由此凹槽51可以为量子点材料8提供均一的填充空间和支撑底座，可以满足量子点材料8均匀且少量的填充，并且由于均匀的涂覆在微透镜5表面，因此量子点材料8受光均匀，即使局部量子点材料8凝聚态产生淬灭中心，这一部分引起的消光也会通过滤光层6的均光效果得到弥补，保证出光的均匀。\n\n[0045]其中，滤光层6安装于所述微透镜5远离所述基板1的一侧的表面上，且位于所述支架2内。所述滤光层6的主体材料为硅胶、PC或PMMA等。所述滤光层6的主体材料中掺杂有蓝光吸收剂，例如：蓝光吸收剂H15。所述滤光层6主要用于降低蓝光强度，将蓝光降低到健康值，防止影响用户体验。\n\n[0046]所述滤光层6远离所述基板1的一侧的表面为粗糙面。所述粗糙面的粗糙度Ra值范围为5um-10um。由此可以实现均匀出光的效果。\n\n[0047]所述滤光层6内设有至少一个散射颗粒61。所述散射颗粒61粒径均匀，散射颗粒61的粒径范围为2um-4um。本实施例中，所述散射颗粒61的粒径为3um，其他实施例中，所述散射颗粒61的粒径可以为2um、2.5um、3.5um或4um。所述散射颗粒61主要用以增加穿过微透镜5的光线的耦合程度，对穿过微透镜5的光线进行散射均光。\n\n[0048]其中，消光层7位于所述滤光层6的周围，且位于所述支架2内。所述消光层7主要用于遮挡未能被量子点材料8吸收的LED蓝光，消除滤光层6周围的散光现象。\n\n[0049]如图1所示，所述电路层3、所述LED芯片4、所述支架2、以及所述微透镜5围城一腔室。本实施例中，所述腔室内填充有惰性气体9，例如：氮气、或氩气。在腔室内填充惰性气体9主要是用于提高量子点LED封装器件100在使用过程中的可靠性。所述其他实施例中，所述腔室内可以填充惰性气体的气凝胶。事实上，所述微透镜5上设有一通孔(图未示)，所述惰性气体9主要通过通孔灌入所述腔室内。\n\n[0050]如图3所示，本实施例还提供了一种量子点LED封装器件100的制备方法，其包括以下步骤：S1，提供一基板1，在所述基板1的一侧的表面上安装支架2；S2，在所述基板1的一侧的表面上制作电路层3，所述电路层3位于所述支架2内；S3，利用焊接的方式在所述电路层3远离所述基板1一侧的表面上安装LED芯片4，所述LED芯片4位于所述支架2内；S4，在所述LED芯片4远离所述基板1的一侧安装微透镜5，所述微透镜5位于所述支架2内；所述微透镜5远离所述基板1的一侧的表面具有至少一个凹槽51，利用刮涂或者喷墨打印的方式在所述凹槽51内填充量子点材料8；S5，通过密封剂将所述微透镜5与所述支架2进行密封，所述电路层3、所述LED芯片4、所述支架2、以及所述微透镜5围城一腔室，然后利用通孔向所述腔室内填充惰性气体9，然后将通孔进行密封；S6，采用喷涂等方式在所述微透镜5远离所述基板1的一侧制作滤光层6，所述滤光层6位于所述支架2内；S7，采用喷涂等方式在所述滤光层6周围设置消光层7，所述消光层7位于所述支架2内。\n\n[0051]其中，所述基板1与所述支架2可以采用一体化加工成型的方式制备形成。以上对本申请所提供的一种量子点LED封装器件及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10946, 24000, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种增亮膜及其制备方法、背光模组、显示装置。\n\n背景技术\n\n[0002]Mini LED(Mini Light Emitting Diode，微发光二极管)背光具有区域亮度可调、高显色性、高对比度等优点。同时，厚度更薄、更省电、可弯曲等特性也让它的应用更加灵活。最重要的是，与OLED(Organic Light Emitting Diode，有机发光二极管)相比，MiniLED的成本更低、寿命更长，不存在烧屏的风险。\n\n[0003]现有技术的Mini LED背光结构采用的是直下式背光，大大缩小了LED晶粒的尺寸。Mini LED背光的基本架构包括Mini LED灯板、量子点膜、扩散板、增亮膜、背板等。由于MiniLED背光需要额外搭配量子点膜，这会导致Mini LED背光的厚度和成本大大增加。故，有必要改善这一缺陷。\n\n发明内容\n\n[0004]本发明实施例提供一种增亮膜，用于解决现有技术的Mini LED背光需要额外搭配量子点膜，导致Mini LED背光的厚度和成本大大增加的技术问题。\n\n[0005]本发明实施例提供一种增亮膜，包括基底以及设置于所述基底的一侧表面的色彩转换层，所述色彩转换层包括多个连续设置的聚光单元，任一所述聚光单元的纵截面宽度沿远离所述基底的一侧逐渐减小；其中，所述色彩转换层中设置有量子点材料。\n\n[0006]在本发明实施例提供的增亮膜中，所述量子点材料为硒化镉基蓝量子点材料。\n\n[0007]在本发明实施例提供的增亮膜中，所述聚光单元的纵截面形状为三角形、半圆形、半椭圆形、梯形之中的任一种。\n\n[0008]本发明实施例提供一种增亮膜的制备方法，包括步骤：\n\n[0009]S1、提供一基底；\n\n[0010]S2、在所述基底的一侧表面制备色彩转换层，所述色彩转换层中添加有量子点材料；\n\n[0011]S3、在所述色彩转换层远离所述基底的一侧表面形成多个连续的聚光单元，任一所述聚光单元的纵截面宽度沿远离所述基底的一侧逐渐减小。\n\n[0012]在本发明实施例提供的增亮膜的制备方法中，所述色彩转换层的制备方法包括：\n\n[0013]将硒化镉基蓝量子点材料、甲苯溶液以及紫外光固化聚合物按一定体积比混合，得到混合溶液；\n\n[0014]将所述混合溶液加热，蒸发甲苯，制得所述色彩转换层。\n\n[0015]在本发明实施例提供的增亮膜的制备方法中，所述步骤S3还包括：\n\n[0016]采用紫外光从所述基底远离所述色彩转换层的一侧照射所述色彩转换层。\n\n[0017]本发明实施例提供一种背光模组，包括基板、位于所述基板之上的多个阵列分布的微发光二极管以及位于所述多个微发光二极管之上的上述的增亮膜。\n\n[0018]在本发明实施例提供的背光模组中，所述微发光二极管为蓝色微发光二极管。\n\n[0019]在本发明实施例提供的背光模组中，所述背光模组还包括位于所述多个微发光二极管与所述增亮膜之间的扩散板以及位于所述增亮膜远离所述扩散板一侧的反射型偏光增亮膜。\n\n[0020]本发明实施例还提供一种显示装置，包括上述的背光模组以及设置于所述背光模组之上的显示面板。\n\n[0021]有益效果：本发明实施例提供的一种增亮膜，包括基底以及设置于所述基底的一侧表面的色彩转换层，所述色彩转换层包括多个连续设置的聚光单元，任一所述聚光单元的纵截面宽度沿远离所述基底的一侧逐渐减小；其中，所述色彩转换层中设置有量子点材料。本发明通过将量子点材料设置在增亮膜中，不需要额外设置量子点膜，从而可以降低背光模组的厚度和成本，所述增亮膜中的色彩转换层，既可以将微发光二极管发出的光转换为白光，又可以起到增亮膜的聚光作用，提升了产品竞争力。\n\n附图说明\n\n[0022]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。\n\n[0023]图1是本发明实施例提供的增亮膜的基本结构示意图。\n\n[0024]图2a是本发明实施例提供的另一增亮膜的基本结构示意图。\n\n[0025]图2b是本发明实施例提供的又一增亮膜的基本结构示意图。\n\n[0026]图3是本发明实施例提供的增亮膜的制备方法流程图。\n\n[0027]图4是本发明实施例提供的增亮膜的制备工艺流程图。\n\n[0028]图5是本发明实施例提供的背光模组的基本结构示意图。\n\n具体实施方式\n\n[0029]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。在附图中，为了清晰及便于理解和描述，附图中绘示的组件的尺寸和厚度并未按照比例。\n\n[0030]如图1所示，为本发明实施例提供的增亮膜的基本结构示意图，所述增亮膜10包括基底101以及设置于所述基底101的一侧表面的色彩转换层102，所述色彩转换层102包括多个连续设置的聚光单元1021，任一所述聚光单元1021的纵截面宽度沿远离所述基底101的一侧逐渐减小；其中，所述色彩转换层102中设置有量子点材料。\n\n[0031]需要说明的是，本发明实施例提供的增亮膜10适用于Mini LED背光中。现有的Mini LED背光是采用蓝背光叠加量子点膜，从而获得白背光，额外增加的量子点膜不仅使得Mini LED背光的厚度增加，还导致生产成本上升。本发明实施例通过将量子点材料设置在增亮膜10中，不需要额外设置量子点膜，从而可以降低Mini LED背光的厚度和成本，所述增亮膜10中的色彩转换层102，既可以将Mini LED发出的光转换为白光，又可以起到增亮膜10的聚光作用，提升了产品竞争力。\n\n[0032]需要说明的是，所述增亮膜10的基底101设置在靠近背光源(即Mini LED，未图示)的一侧，所述增亮膜10的色彩转换层102设置在远离背光源的一侧，即任一所述聚光单元1021的纵截面宽度沿远离背光源的一侧逐渐减小，即所述聚光单元1021为一个上窄下宽的部件，从而可以起到聚光的作用。本发明实施例通过将量子点材料设置在具有聚光功能的色彩转换层102中，使得增亮膜10同时具有色彩转换和聚光的作用，既降低了背光模组的厚度，又降低了背光模组的成本。\n\n[0033]在一种实施例中，所述量子点材料为硒化镉基蓝量子点材料。具体的，Mini LED背光一般采用蓝色微发光二极管作为背光源，所述硒化镉基蓝量子点材料可以将蓝光转换为白光。\n\n[0034]在本实施例中，所述聚光单元1021的纵截面形状为三角形，其中，三角形的底边靠近背光源设置，三角形的两条腰相当于两个棱镜，能改变从背光源射入的光线的传播方向，提升射入的光线向上的亮度。在其他实施例中，所述聚光单元1021的纵截面形状还可以为半圆形、半椭圆形、梯形之中的任一种。\n\n[0035]接下来，请参阅图2a，为本发明实施例提供的另一增亮膜的基本结构示意图，所述增亮膜10包括基底101以及设置于所述基底101的一侧表面的色彩转换层102，所述色彩转换层102包括多个连续设置的聚光单元1022，任一所述聚光单元1022的纵截面宽度沿远离所述基底101的一侧逐渐减小；其中，所述色彩转换层102中设置有量子点材料。\n\n[0036]在本实施例中，所述聚光单元1022的纵截面形状为半圆形，其中，半圆形的凸起朝向远离背光源的一侧设置，半圆形的凸起类似一个微透镜，从背光源射入的光线经所述微透镜汇聚，从而可以提升射入的光线向上的亮度。\n\n[0037]接下来，请参阅图2b，为本发明实施例提供的又一增亮膜的基本结构示意图，所述增亮膜10包括基底101以及设置于所述基底101的一侧表面的色彩转换层102，所述色彩转换层102包括多个连续设置的聚光单元1023，任一所述聚光单元1023的纵截面宽度沿远离所述基底101的一侧逐渐减小；其中，所述色彩转换层102中设置有量子点材料。\n\n[0038]在本实施例中，所述聚光单元1023的纵截面形状为梯形，其中，梯形的底边靠近背光源设置，梯形的顶边远离背光源设置，梯形的两条腰相当于两个棱镜，可以改变从背光源射入的光线的传播方向，提升射入的光线向上的亮度。\n\n[0039]接下来，请参阅图3，为本发明实施例提供的增亮膜的制备方法流程图，所述制备方法包括步骤：\n\n[0040]S1、提供一基底；\n\n[0041]S2、在所述基底的一侧表面制备色彩转换层，所述色彩转换层中添加有量子点材料；\n\n[0042]S3、在所述色彩转换层远离所述基底的一侧表面形成多个连续的聚光单元，任一所述聚光单元的纵截面宽度沿远离所述基底的一侧逐渐减小。\n\n[0043]需要说明的是，本发明实施例提供的增亮膜适用于Mini LED背光中，本发明实施例通过将量子点材料添加在增亮膜中，不需要额外设置量子点膜，从而可以降低Mini LED背光的厚度和成本，所述增亮膜中的色彩转换层，既可以将Mini LED发出的光转换为白光，又可以起到增亮膜的聚光作用，提升了产品竞争力。\n\n[0044]在一种实施例中，所述色彩转换层的制备方法包括：将硒化镉基蓝量子点材料、甲苯溶液以及紫外光固化聚合物按一定体积比混合，得到混合溶液；将所述混合溶液加热，蒸发甲苯，制得所述色彩转换层。\n\n[0045]需要说明的是，Mini LED背光一般采用蓝色微发光二极管作为背光源，所述硒化镉基蓝量子点材料可以将蓝光转换为白光，选取所述硒化镉基蓝量子点材料作为色转换材料的原因还包括：硒化镉基蓝量子点材料还具有颜色纯度高、良好的稳定性和较高的光致发光效率等优点。\n\n[0046]需要说明的是，甲苯溶液是无色澄清的液体，有苯样气味，有强折光性，能与乙醇、乙醚、丙酮、氯仿、二硫化碳和冰乙酸混溶，极微溶于水。甲苯溶液大多用作溶剂和高辛烷值汽油添加剂，是有机化工的重要原料。本发明实施例通过使用甲苯溶液作为溶剂，能很好地将硒化镉基蓝量子点材料溶解。\n\n[0047]需要说明的是，本发明实施例提供的紫外光固化聚合物为NOA61胶。NOA61胶是一种透明、无色、在紫外光照射下即可固化的液态光聚物，使用NOA61胶省去了其它光学粘和系统中通常需要的预混合、干燥或热固化等操作，并且固化速度极快，具体时间取决于应用厚度和接受施加紫外光的能量。NOA61胶相对于其它光学粘合材料具有极好的透光性，低收缩和轻微的弹性，这些特性十分重要，能保证生产出高品质的光学组件，尤其是在环境条件变化时仍能确保长期特性。NOA61胶是通过紫外光固化，对波长为350nm-380nm的紫外光非常敏感，完全固化所需的能量大致为3焦耳/平方厘米。本发明实施例选取NOA61胶作为聚合物基体材料的原因还包括：NOA61胶不仅可以包封量子点，还具有较好的热稳定性以及与硒化镉基蓝量子点材料、甲苯溶液良好的混溶性。\n\n[0048]在一种实施例中，所述步骤S3还包括：采用紫外光从所述基底远离所述色彩转换层的一侧照射所述色彩转换层。可以理解的是，由于所述色彩转换层远离所述基底的一侧形成有多个聚光单元，若从所述色彩转换层远离所述基底的一侧照射紫外光，则射出的紫外光会首先经过所述多个聚光单元，因此，大部分的紫外光会发散(被反射)，只有少部分的紫外光能到达所述色彩转换层与所述基底接触的界面，因此，会导致固化效果差。本发明实施例通过从所述基底远离所述色彩转换层的一侧照射紫外光，射出的紫外光经过所述基底，全部被所述色彩转换层吸收，固化效果更好。在一种实施例中，所述基底的材料为聚对苯二甲酸乙二醇酯(PET)。\n\n[0049]接下来，请参阅图4，为本发明实施例提供的增亮膜的制备工艺流程图，首先提供一基底101，所述基底101的材料为聚对苯二甲酸乙二醇酯(PET)。\n\n[0050]接下来，制备色彩转换层102，本发明实施例选取硒化镉基蓝量子点材料作为色转换材料，选取甲苯溶液作为色转换材料的溶剂，选取NOA61胶作为紫外光固化聚合物的基体材料，首先将紫外光固化聚合物(NOA61胶)与硒化镉基蓝量子点和甲苯溶液的混合液以一定体积比混合，搅拌一定时间使其混合均匀，然后将NOA61胶、硒化镉基蓝量子点以及甲苯溶液的混合溶液加热一定时间蒸发掉甲苯，得到硒化镉基蓝量子点与NOA61胶的复合物(即色彩转换层102)，最后将所述色彩转换层102压印在PET基膜(即基底101)上。其中，所述硒化镉基蓝量子点材料可以将蓝光转换为白光。\n\n[0051]接下来，在所述色彩转换层102远离所述基底101的一侧表面压印形成多个连续的聚光单元1021，任一所述聚光单元1021的纵截面宽度沿远离所述基底101的一侧逐渐减小。随后，采用紫外光从所述基底101远离所述色彩转换层102的一侧照射所述色彩转换层102以固化所述色彩转换层102。\n\n[0052]在本实施例中，所述聚光单元1021的纵截面形状为三角形，其中，三角形的底边靠近背光源(未图示)设置，三角形的两条腰相当于两个棱镜，能改变从背光源射入的光线的传播方向，提升射入的光线向上的亮度。在其他实施例中，所述聚光单元1021的纵截面形状还可以为半圆形、半椭圆形、梯形之中的任一种。\n\n[0053]接下来，请参阅图5，为本发明实施例提供的背光模组的基本结构示意图，所述背光模组包括基板20、位于所述基板20之上的多个阵列分布的微发光二极管30以及位于所述多个微发光二极管30之上的增亮膜10，所述增亮膜10包括基底101以及设置于所述基底101远离所述多个微发光二极管30的一侧表面的色彩转换层102，所述色彩转换层102包括多个连续设置的聚光单元1021，任一所述聚光单元1021的纵截面宽度沿远离所述基底101的一侧逐渐减小；其中，所述色彩转换层102中设置有量子点材料。\n\n[0054]在一种实施例中，所述微发光二极管30为蓝色微发光二极管，所述量子点材料为硒化镉基蓝量子点材料。具体的，所述硒化镉基蓝量子点材料可以将所述蓝色微发光二极管发出的蓝光转换为白光。\n\n[0055]可以理解的是，本发明实施例通过将量子点材料设置在增亮膜10中，不需要额外设置量子点膜，从而可以降低背光模组的厚度和成本，所述增亮膜10中的色彩转换层102，既可以将所述微发光二极管30发出的光转换为白光，又可以起到增亮膜10的聚光作用，提升了产品竞争力。\n\n[0056]可以理解的是，任一所述聚光单元1021的纵截面宽度沿远离所述微发光二极管30的一侧逐渐减小，即所述聚光单元1021为一个上窄下宽的部件，从而可以起到聚光的作用。本发明实施例通过将量子点材料设置在具有聚光功能的色彩转换层102中，使得增亮膜10同时具有色彩转换和聚光的作用，既降低了背光模组的厚度，又降低了背光模组的成本。\n\n[0057]在本实施例中，所述聚光单元1021的纵截面形状为三角形，其中，三角形的底边靠近所述微发光二极管30设置，三角形的两条腰相当于两个棱镜，能改变从所述微发光二极管30射入的光线的传播方向，提升射入的光线向上的亮度。在其他实施例中，所述聚光单元1021的纵截面形状还可以为半圆形、半椭圆形、梯形之中的任一种。\n\n[0058]在一种实施例中，所述背光模组还包括位于所述多个微发光二极管30与所述增亮膜10之间的扩散板40以及位于所述增亮膜10远离所述扩散板40一侧的反射型偏光增亮膜50。其中，所述多个微发光二极管30的上表面封装有透明硅胶层301，所述扩散板40是用于将所述微发光二极管30发出的点状光源柔化为面光源，掩蔽灯影，所述增亮膜10是用于将从所述扩散板40发散的面光源聚集，从而提升光线向上的亮度，同时将所述微发光二极管30发出的光转换为白光，所述反射型偏光增亮膜50的主要作用是提升光线的利用率。\n\n[0059]在一种实施例中，所述背光模组还包括背板60，所述背板60包括底板和与所述底板一体成型的侧板，所述基板20放置在所述底板上，所述侧板通过遮光胶70与所述反射型偏光增亮膜50固定连接。\n\n[0060]本发明实施例还提供一种显示装置，包括上述的背光模组以及设置于所述背光模组之上的显示面板，所述背光模组的结构请参阅图5及相关说明，此处不再赘述。本发明实施例提供的显示装置可以为：手机、平板电脑、笔记本电脑、数码相机、导航仪等具有显示功能的产品或部件。\n\n[0061]综上所述，本发明实施例提供的一种增亮膜，包括基底以及设置于所述基底的一侧表面的色彩转换层，所述色彩转换层包括多个连续设置的聚光单元，任一所述聚光单元的纵截面宽度沿远离所述基底的一侧逐渐减小；其中，所述色彩转换层中设置有量子点材料。本发明通过将量子点材料设置在增亮膜中，不需要额外设置量子点膜，从而可以降低背光模组的厚度和成本，所述增亮膜中的色彩转换层，既可以将微发光二极管发出的光转换为白光，又可以起到增亮膜的聚光作用，提升了产品竞争力，解决了现有技术的Mini LED背光需要额外搭配量子点膜，导致Mini LED背光的厚度和成本大大增加的技术问题。\n\n[0062]以上对本发明实施例所提供的一种增亮膜及其制备方法、背光模组、显示装置进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种增亮膜及其制备方法、背光模组、显示装置。\n\n背景技术\n\n[0002]Mini LED(Mini Light Emitting Diode，微发光二极管)背光具有区域亮度可调、高显色性、高对比度等优点。同时，厚度更薄、更省电、可弯曲等特性也让它的应用更加灵活。最重要的是，与OLED(Organic Light Emitting Diode，有机发光二极管)相比，MiniLED的成本更低、寿命更长，不存在烧屏的风险。\n\n[0003]现有技术的Mini LED背光结构采用的是直下式背光，大大缩小了LED晶粒的尺寸。Mini LED背光的基本架构包括Mini LED灯板、量子点膜、扩散板、增亮膜、背板等。由于MiniLED背光需要额外搭配量子点膜，这会导致Mini LED背光的厚度和成本大大增加。故，有必要改善这一缺陷。\n\n发明内容\n\n[0004]本发明实施例提供一种增亮膜，用于解决现有技术的Mini LED背光需要额外搭配量子点膜，导致Mini LED背光的厚度和成本大大增加的技术问题。\n\n[0005]本发明实施例提供一种增亮膜，包括基底以及设置于所述基底的一侧表面的色彩转换层，所述色彩转换层包括多个连续设置的聚光单元，任一所述聚光单元的纵截面宽度沿远离所述基底的一侧逐渐减小；其中，所述色彩转换层中设置有量子点材料。\n\n[0006]在本发明实施例提供的增亮膜中，所述量子点材料为硒化镉基蓝量子点材料。\n\n[0007]在本发明实施例提供的增亮膜中，所述聚光单元的纵截面形状为三角形、半圆形、半椭圆形、梯形之中的任一种。\n\n[0008]本发明实施例提供一种增亮膜的制备方法，包括步骤：\n\n[0009]S1、提供一基底；\n\n[0010]S2、在所述基底的一侧表面制备色彩转换层，所述色彩转换层中添加有量子点材料；\n\n[0011]S3、在所述色彩转换层远离所述基底的一侧表面形成多个连续的聚光单元，任一所述聚光单元的纵截面宽度沿远离所述基底的一侧逐渐减小。\n\n[0012]在本发明实施例提供的增亮膜的制备方法中，所述色彩转换层的制备方法包括：\n\n[0013]将硒化镉基蓝量子点材料、甲苯溶液以及紫外光固化聚合物按一定体积比混合，得到混合溶液；\n\n[0014]将所述混合溶液加热，蒸发甲苯，制得所述色彩转换层。\n\n[0015]在本发明实施例提供的增亮膜的制备方法中，所述步骤S3还包括：\n\n[0016]采用紫外光从所述基底远离所述色彩转换层的一侧照射所述色彩转换层。\n\n[0017]本发明实施例提供一种背光模组，包括基板、位于所述基板之上的多个阵列分布的微发光二极管以及位于所述多个微发光二极管之上的上述的增亮膜。\n\n[0018]在本发明实施例提供的背光模组中，所述微发光二极管为蓝色微发光二极管。\n\n[0019]在本发明实施例提供的背光模组中，所述背光模组还包括位于所述多个微发光二极管与所述增亮膜之间的扩散板以及位于所述增亮膜远离所述扩散板一侧的反射型偏光增亮膜。\n\n[0020]本发明实施例还提供一种显示装置，包括上述的背光模组以及设置于所述背光模组之上的显示面板。\n\n[0021]有益效果：本发明实施例提供的一种增亮膜，包括基底以及设置于所述基底的一侧表面的色彩转换层，所述色彩转换层包括多个连续设置的聚光单元，任一所述聚光单元的纵截面宽度沿远离所述基底的一侧逐渐减小；其中，所述色彩转换层中设置有量子点材料。本发明通过将量子点材料设置在增亮膜中，不需要额外设置量子点膜，从而可以降低背光模组的厚度和成本，所述增亮膜中的色彩转换层，既可以将微发光二极管发出的光转换为白光，又可以起到增亮膜的聚光作用，提升了产品竞争力。\n\n附图说明\n\n[0022]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。\n\n[0023]图1是本发明实施例提供的增亮膜的基本结构示意图。\n\n[0024]图2a是本发明实施例提供的另一增亮膜的基本结构示意图。\n\n[0025]图2b是本发明实施例提供的又一增亮膜的基本结构示意图。\n\n[0026]图3是本发明实施例提供的增亮膜的制备方法流程图。\n\n[0027]图4是本发明实施例提供的增亮膜的制备工艺流程图。\n\n[0028]图5是本发明实施例提供的背光模组的基本结构示意图。\n\n具体实施方式\n\n[0029]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。在附图中，为了清晰及便于理解和描述，附图中绘示的组件的尺寸和厚度并未按照比例。\n\n[0030]如图1所示，为本发明实施例提供的增亮膜的基本结构示意图，所述增亮膜10包括基底101以及设置于所述基底101的一侧表面的色彩转换层102，所述色彩转换层102包括多个连续设置的聚光单元1021，任一所述聚光单元1021的纵截面宽度沿远离所述基底101的一侧逐渐减小；其中，所述色彩转换层102中设置有量子点材料。\n\n[0031]需要说明的是，本发明实施例提供的增亮膜10适用于Mini LED背光中。现有的Mini LED背光是采用蓝背光叠加量子点膜，从而获得白背光，额外增加的量子点膜不仅使得Mini LED背光的厚度增加，还导致生产成本上升。本发明实施例通过将量子点材料设置在增亮膜10中，不需要额外设置量子点膜，从而可以降低Mini LED背光的厚度和成本，所述增亮膜10中的色彩转换层102，既可以将Mini LED发出的光转换为白光，又可以起到增亮膜10的聚光作用，提升了产品竞争力。\n\n[0032]需要说明的是，所述增亮膜10的基底101设置在靠近背光源(即Mini LED，未图示)的一侧，所述增亮膜10的色彩转换层102设置在远离背光源的一侧，即任一所述聚光单元1021的纵截面宽度沿远离背光源的一侧逐渐减小，即所述聚光单元1021为一个上窄下宽的部件，从而可以起到聚光的作用。本发明实施例通过将量子点材料设置在具有聚光功能的色彩转换层102中，使得增亮膜10同时具有色彩转换和聚光的作用，既降低了背光模组的厚度，又降低了背光模组的成本。\n\n[0033]在一种实施例中，所述量子点材料为硒化镉基蓝量子点材料。具体的，Mini LED背光一般采用蓝色微发光二极管作为背光源，所述硒化镉基蓝量子点材料可以将蓝光转换为白光。\n\n[0034]在本实施例中，所述聚光单元1021的纵截面形状为三角形，其中，三角形的底边靠近背光源设置，三角形的两条腰相当于两个棱镜，能改变从背光源射入的光线的传播方向，提升射入的光线向上的亮度。在其他实施例中，所述聚光单元1021的纵截面形状还可以为半圆形、半椭圆形、梯形之中的任一种。\n\n[0035]接下来，请参阅图2a，为本发明实施例提供的另一增亮膜的基本结构示意图，所述增亮膜10包括基底101以及设置于所述基底101的一侧表面的色彩转换层102，所述色彩转换层102包括多个连续设置的聚光单元1022，任一所述聚光单元1022的纵截面宽度沿远离所述基底101的一侧逐渐减小；其中，所述色彩转换层102中设置有量子点材料。\n\n[0036]在本实施例中，所述聚光单元1022的纵截面形状为半圆形，其中，半圆形的凸起朝向远离背光源的一侧设置，半圆形的凸起类似一个微透镜，从背光源射入的光线经所述微透镜汇聚，从而可以提升射入的光线向上的亮度。\n\n[0037]接下来，请参阅图2b，为本发明实施例提供的又一增亮膜的基本结构示意图，所述增亮膜10包括基底101以及设置于所述基底101的一侧表面的色彩转换层102，所述色彩转换层102包括多个连续设置的聚光单元1023，任一所述聚光单元1023的纵截面宽度沿远离所述基底101的一侧逐渐减小；其中，所述色彩转换层102中设置有量子点材料。\n\n[0038]在本实施例中，所述聚光单元1023的纵截面形状为梯形，其中，梯形的底边靠近背光源设置，梯形的顶边远离背光源设置，梯形的两条腰相当于两个棱镜，可以改变从背光源射入的光线的传播方向，提升射入的光线向上的亮度。\n\n[0039]接下来，请参阅图3，为本发明实施例提供的增亮膜的制备方法流程图，所述制备方法包括步骤：\n\n[0040]S1、提供一基底；\n\n[0041]S2、在所述基底的一侧表面制备色彩转换层，所述色彩转换层中添加有量子点材料；\n\n[0042]S3、在所述色彩转换层远离所述基底的一侧表面形成多个连续的聚光单元，任一所述聚光单元的纵截面宽度沿远离所述基底的一侧逐渐减小。\n\n[0043]需要说明的是，本发明实施例提供的增亮膜适用于Mini LED背光中，本发明实施例通过将量子点材料添加在增亮膜中，不需要额外设置量子点膜，从而可以降低Mini LED背光的厚度和成本，所述增亮膜中的色彩转换层，既可以将Mini LED发出的光转换为白光，又可以起到增亮膜的聚光作用，提升了产品竞争力。\n\n[0044]在一种实施例中，所述色彩转换层的制备方法包括：将硒化镉基蓝量子点材料、甲苯溶液以及紫外光固化聚合物按一定体积比混合，得到混合溶液；将所述混合溶液加热，蒸发甲苯，制得所述色彩转换层。\n\n[0045]需要说明的是，Mini LED背光一般采用蓝色微发光二极管作为背光源，所述硒化镉基蓝量子点材料可以将蓝光转换为白光，选取所述硒化镉基蓝量子点材料作为色转换材料的原因还包括：硒化镉基蓝量子点材料还具有颜色纯度高、良好的稳定性和较高的光致发光效率等优点。\n\n[0046]需要说明的是，甲苯溶液是无色澄清的液体，有苯样气味，有强折光性，能与乙醇、乙醚、丙酮、氯仿、二硫化碳和冰乙酸混溶，极微溶于水。甲苯溶液大多用作溶剂和高辛烷值汽油添加剂，是有机化工的重要原料。本发明实施例通过使用甲苯溶液作为溶剂，能很好地将硒化镉基蓝量子点材料溶解。\n\n[0047]需要说明的是，本发明实施例提供的紫外光固化聚合物为NOA61胶。NOA61胶是一种透明、无色、在紫外光照射下即可固化的液态光聚物，使用NOA61胶省去了其它光学粘和系统中通常需要的预混合、干燥或热固化等操作，并且固化速度极快，具体时间取决于应用厚度和接受施加紫外光的能量。NOA61胶相对于其它光学粘合材料具有极好的透光性，低收缩和轻微的弹性，这些特性十分重要，能保证生产出高品质的光学组件，尤其是在环境条件变化时仍能确保长期特性。NOA61胶是通过紫外光固化，对波长为350nm-380nm的紫外光非常敏感，完全固化所需的能量大致为3焦耳/平方厘米。本发明实施例选取NOA61胶作为聚合物基体材料的原因还包括：NOA61胶不仅可以包封量子点，还具有较好的热稳定性以及与硒化镉基蓝量子点材料、甲苯溶液良好的混溶性。\n\n[0048]在一种实施例中，所述步骤S3还包括：采用紫外光从所述基底远离所述色彩转换层的一侧照射所述色彩转换层。可以理解的是，由于所述色彩转换层远离所述基底的一侧形成有多个聚光单元，若从所述色彩转换层远离所述基底的一侧照射紫外光，则射出的紫外光会首先经过所述多个聚光单元，因此，大部分的紫外光会发散(被反射)，只有少部分的紫外光能到达所述色彩转换层与所述基底接触的界面，因此，会导致固化效果差。本发明实施例通过从所述基底远离所述色彩转换层的一侧照射紫外光，射出的紫外光经过所述基底，全部被所述色彩转换层吸收，固化效果更好。在一种实施例中，所述基底的材料为聚对苯二甲酸乙二醇酯(PET)。\n\n[0049]接下来，请参阅图4，为本发明实施例提供的增亮膜的制备工艺流程图，首先提供一基底101，所述基底101的材料为聚对苯二甲酸乙二醇酯(PET)。\n\n[0050]接下来，制备色彩转换层102，本发明实施例选取硒化镉基蓝量子点材料作为色转换材料，选取甲苯溶液作为色转换材料的溶剂，选取NOA61胶作为紫外光固化聚合物的基体材料，首先将紫外光固化聚合物(NOA61胶)与硒化镉基蓝量子点和甲苯溶液的混合液以一定体积比混合，搅拌一定时间使其混合均匀，然后将NOA61胶、硒化镉基蓝量子点以及甲苯溶液的混合溶液加热一定时间蒸发掉甲苯，得到硒化镉基蓝量子点与NOA61胶的复合物(即色彩转换层102)，最后将所述色彩转换层102压印在PET基膜(即基底101)上。其中，所述硒化镉基蓝量子点材料可以将蓝光转换为白光。\n\n[0051]接下来，在所述色彩转换层102远离所述基底101的一侧表面压印形成多个连续的聚光单元1021，任一所述聚光单元1021的纵截面宽度沿远离所述基底101的一侧逐渐减小。随后，采用紫外光从所述基底101远离所述色彩转换层102的一侧照射所述色彩转换层102以固化所述色彩转换层102。\n\n[0052]在本实施例中，所述聚光单元1021的纵截面形状为三角形，其中，三角形的底边靠近背光源(未图示)设置，三角形的两条腰相当于两个棱镜，能改变从背光源射入的光线的传播方向，提升射入的光线向上的亮度。在其他实施例中，所述聚光单元1021的纵截面形状还可以为半圆形、半椭圆形、梯形之中的任一种。\n\n[0053]接下来，请参阅图5，为本发明实施例提供的背光模组的基本结构示意图，所述背光模组包括基板20、位于所述基板20之上的多个阵列分布的微发光二极管30以及位于所述多个微发光二极管30之上的增亮膜10，所述增亮膜10包括基底101以及设置于所述基底101远离所述多个微发光二极管30的一侧表面的色彩转换层102，所述色彩转换层102包括多个连续设置的聚光单元1021，任一所述聚光单元1021的纵截面宽度沿远离所述基底101的一侧逐渐减小；其中，所述色彩转换层102中设置有量子点材料。\n\n[0054]在一种实施例中，所述微发光二极管30为蓝色微发光二极管，所述量子点材料为硒化镉基蓝量子点材料。具体的，所述硒化镉基蓝量子点材料可以将所述蓝色微发光二极管发出的蓝光转换为白光。\n\n[0055]可以理解的是，本发明实施例通过将量子点材料设置在增亮膜10中，不需要额外设置量子点膜，从而可以降低背光模组的厚度和成本，所述增亮膜10中的色彩转换层102，既可以将所述微发光二极管30发出的光转换为白光，又可以起到增亮膜10的聚光作用，提升了产品竞争力。\n\n[0056]可以理解的是，任一所述聚光单元1021的纵截面宽度沿远离所述微发光二极管30的一侧逐渐减小，即所述聚光单元1021为一个上窄下宽的部件，从而可以起到聚光的作用。本发明实施例通过将量子点材料设置在具有聚光功能的色彩转换层102中，使得增亮膜10同时具有色彩转换和聚光的作用，既降低了背光模组的厚度，又降低了背光模组的成本。\n\n[0057]在本实施例中，所述聚光单元1021的纵截面形状为三角形，其中，三角形的底边靠近所述微发光二极管30设置，三角形的两条腰相当于两个棱镜，能改变从所述微发光二极管30射入的光线的传播方向，提升射入的光线向上的亮度。在其他实施例中，所述聚光单元1021的纵截面形状还可以为半圆形、半椭圆形、梯形之中的任一种。\n\n[0058]在一种实施例中，所述背光模组还包括位于所述多个微发光二极管30与所述增亮膜10之间的扩散板40以及位于所述增亮膜10远离所述扩散板40一侧的反射型偏光增亮膜50。其中，所述多个微发光二极管30的上表面封装有透明硅胶层301，所述扩散板40是用于将所述微发光二极管30发出的点状光源柔化为面光源，掩蔽灯影，所述增亮膜10是用于将从所述扩散板40发散的面光源聚集，从而提升光线向上的亮度，同时将所述微发光二极管30发出的光转换为白光，所述反射型偏光增亮膜50的主要作用是提升光线的利用率。\n\n[0059]在一种实施例中，所述背光模组还包括背板60，所述背板60包括底板和与所述底板一体成型的侧板，所述基板20放置在所述底板上，所述侧板通过遮光胶70与所述反射型偏光增亮膜50固定连接。\n\n[0060]本发明实施例还提供一种显示装置，包括上述的背光模组以及设置于所述背光模组之上的显示面板，所述背光模组的结构请参阅图5及相关说明，此处不再赘述。本发明实施例提供的显示装置可以为：手机、平板电脑、笔记本电脑、数码相机、导航仪等具有显示功能的产品或部件。\n\n[0061]综上所述，本发明实施例提供的一种增亮膜，包括基底以及设置于所述基底的一侧表面的色彩转换层，所述色彩转换层包括多个连续设置的聚光单元，任一所述聚光单元的纵截面宽度沿远离所述基底的一侧逐渐减小；其中，所述色彩转换层中设置有量子点材料。本发明通过将量子点材料设置在增亮膜中，不需要额外设置量子点膜，从而可以降低背光模组的厚度和成本，所述增亮膜中的色彩转换层，既可以将微发光二极管发出的光转换为白光，又可以起到增亮膜的聚光作用，提升了产品竞争力，解决了现有技术的Mini LED背光需要额外搭配量子点膜，导致Mini LED背光的厚度和成本大大增加的技术问题。\n\n[0062]以上对本发明实施例所提供的一种增亮膜及其制备方法、背光模组、显示装置进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。');
INSERT INTO `os_patent_instruction_text` VALUES (10947, 24001, '技术领域\n\n[0001]本申请涉及显示面板技术领域，具体涉及一种发光器件和一种显示面板以及一种显示面板制备方法。\n\n背景技术\n\n[0002]Micro LED和Mini LED在显示的亮度，色域、残影、功耗、寿命等方面优于现有的OLED和LCD显示装置，但是目前量产的技术瓶颈在于巨量转移制程，现有的技术无法在较小的节拍时间内将大量发光器件安装在驱动板(包括第一衬底和TFT器件)的对应位置。\n\n[0003]同时，现有的发光器件多是PN级轴对称设计，这种设计使得设备在转移LED时需要按照正确方向对准安装LED元件，极大的增大转移难度和repair的难度。\n\n[0004]因此，现有显示面板存在巨量转移发光器件的对准难度大的技术问题。\n\n发明内容\n\n[0005]本申请实施例提供一种发光器件和一种显示面板制备方法，可以缓解现有显示面板存在巨量转移发光器件的对准难度大的技术问题。\n\n[0006]本申请提供一种发光器件，包括：\n\n[0007]第一衬底；\n\n[0008]设置在所述第一衬底上的N型接触层；\n\n[0009]设置在所述N型接触层上的有源层；\n\n[0010]设置在所述有源层上的P型接触层；\n\n[0011]其中，所述P型接触层上还设置有第一电极、以及围绕所述第一电极设置的第二电极。\n\n[0012]可选的，在本申请的一些实施例中，所述第一电极和所述第二电极之间还设置有PN绝缘层。\n\n[0013]可选的，在本申请的一些实施例中，所述第一电极为P极/N极，所述第二电极为N极/P极。\n\n[0014]可选的，在本申请的一些实施例中，所述第二电极围绕所述第一电极设置，且所述第二电极上的任一点到所述第一电极中心点的距离相等。\n\n[0015]可选的，在本申请的一些实施例中，在同一截面内，所述第一电极的宽度大于或等于任一位置的所述第二电极的宽度。\n\n[0016]可选的，在本申请的一些实施例中，所述第二电极远离所述第一电极的一侧表面还设置有第一封装层，所述第一封装层围绕所述第二电极设置。\n\n[0017]本申请提供一种显示面板，包括：\n\n[0018]第二衬底；\n\n[0019]设置在所述第二衬底上的TFT器件，所述TFT器件包括源极、以及接地端；\n\n[0020]设置在所述第二衬底上的发光器件，所述发光器件包括第一电极、以及围绕所述第一电极设置的第二电极；\n\n[0021]其中，当所述第一电极为P极时，所述第一电极与所述源极抵接设置，所述第二电极与所述接地端抵接设置，或当所述第一电极为N极时，所述第一电极与所述接地端抵接设置，所述第二电极与所述源极抵接设置。\n\n[0022]本申请提供一种显示面板制备方法，包括：\n\n[0023]提供第二衬底；\n\n[0024]在所述第二衬底上制备得到TFT器件；\n\n[0025]提供发光器件，所述发光器件包括第一电极、以及围绕所述第一电极设置的第二电极，所述第二电极关于所述第一电极呈对称设置；\n\n[0026]将所述发光器件转移到第二衬底上，使P极与源极抵接，N极与接地端抵接。\n\n[0027]可选的，在本申请的一些实施例中，将所述发光器件转移到第二衬底的步骤还包括：提供的发光器件的第一电极为P极且第二电极为N极时，将所述第二电极与所述接地端对齐抵接设置。\n\n[0028]可选的，在本申请的一些实施例中，将所述发光器件转移到第二衬底的步骤还包括：提供的发光器件的第一电极为N极且第二电极为P极时，将所述第二电极与所述源极对齐抵接设置。\n\n[0029]本申请实施例提供的发光器件包括第一衬底、设置在所述第一衬底上的N型接触层、设置在所述N型接触层上的有源层、设置在所述有源层上的P型接触层，其中所述P型接触层上还设置有第一电极、以及围绕所述第一电极设置的第二电极；通过将第二电极围绕所述第一电极设置，且第二电极上的任一点到所述第一电极的中心点等间距位置，将第二电极上的任一点与TFT器件的对应电极抵接对齐，就能完成miniLED的转移，降低了发光器件的巨量转移制程的难度。\n\n附图说明\n\n[0030]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0031]图1是本申请实施例提供的发光器件的第一种截面示意图；\n\n[0032]图2是本申请实施例提供的发光器件的第二种截面示意图；\n\n[0033]图3是本申请实施例提供的发光器件的俯视示意图；\n\n[0034]图4是本申请实施例提供的显示面板制备方法的流程图；\n\n[0035]图5是本申请实施例提供的显示面板的第一种截面示意图；\n\n[0036]图6是本申请实施例提供的显示面板的第二种截面示意图。\n\n[0037]附图标记说明：\n\n[0038]\n\n[0039]\n\n具体实施方式\n\n[0040]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0041]本申请实施例提供一种发光器件和一种显示面板及其制备方法。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0042]如图1、图2所示，本申请实施例提供的所述发光器件1包括所述第一衬底10、设置在所述第一衬底10上的所述N型接触层20、设置在所述N型接触层20上的所述有源层30、设置在所述有源层30上的所述P型接触层40，其中，所述P型接触层40上还设置有所述第一电极50、以及围绕所述第一电极50设置的所述第二电极60。\n\n[0043]在本实施例中，所述发光器件1包括所述第一衬底10、设置在所述第一衬底10上的所述N型接触层20、设置在所述N型接触层20上的所述有源层30、设置在所述有源层30上的所述P型接触层40，其中所述P型接触层40上还设置有所述第一电极50、以及围绕所述第一电极50设置的所述第二电极60；通过将所述第二电极60围绕所述第一电极50设置，且所述第二电极60上的任一点到所述第一电极50的中心点(图中未标注)等间距位置，将所述第二电极60上的任一点与TFT器件(图中未标注)的对应电极抵接对齐，就能完成miniLED的转移，降低了所述发光器件1的巨量转移制程的难度。\n\n[0044]其中，如图1所示，当所述第一电极50为P极、所述第二电极60为N极时，所述第二电极60与TFT器件(图中未标注)的所述接地端1053抵接对齐；所述第一电极50通过过孔与所述P型接触层40连接，所述第二电极60通过过孔与N型接触层20连接。\n\n[0045]其中，如图2所示，当所述第一电极50为N极、所述第二电极60为P极时，所述第二电极60与TFT器件(图中未标注)的所述源极1051抵接对齐；所述第一电极50通过过孔与N型接触层20连接，所述第二电极60通过过孔与所述P型接触层40连接。\n\n[0046]在一种实施例中，如图3所示，所述第一电极50和所述第二电极60之间还设置有所述PN绝缘层70。\n\n[0047]其中，所述发光器件1还包括所述PN绝缘层70，所述PN绝缘层70围绕并贴合所述第二电极60层设置。\n\n[0048]其中，所述第一电极50为圆柱状结构，所述第二电极60为圆环状结构。\n\n[0049]在一种实施例中，所述第一电极50为P极，所述第二电极60为N极。\n\n[0050]在一种实施例中，所述第一电极50为N极，所述第二电极60为P极。\n\n[0051]在一种实施例中，所述第二电极60围绕所述第一电极50设置，且所述第二电极60上的任一点到所述第一电极50中心点的距离相等。\n\n[0052]在一种实施例中，在同一截面内，所述第一电极50的宽度大于或等于任一所述第二电极60的宽度。\n\n[0053]在一种实施例中，所述第二电极60远离所述第一电极50的一侧表面还设置有所述第一封装层80，所述第一封装层80围绕所述第二电极60设置。\n\n[0054]在一种实施例中，所述P型接触层40的制备材料包括氮化镓，且/或所述N型接触层20的制备材料包括氮化镓。\n\n[0055]如图4所示，本申请提供的所述显示面板2制备方法包括：\n\n[0056]S1:提供第二衬底101；\n\n[0057]S2:在第二衬底101上制备得到TFT器件(图中未标注)；\n\n[0058]S3:提供所述发光器件1，所述发光器件1包括所述第一电极50、以及围绕所述第一电极50设置的所述第二电极60，所述第二电极60关于所述第一电极50呈对称设置；\n\n[0059]S4:将所述发光器件1转移到第二衬底101上，使P极与所述源极1051抵接，N极与所述接地端1053抵接。\n\n[0060]在一种实施例中，将所述发光器件1转移到第二衬底101的步骤还包括：提供的所述发光器件1的所述第一电极50为P极且所述第二电极60为N极时，将所述第二电极60与所述接地端1053对齐抵接设置。\n\n[0061]在本实施例中，当发光器件的第二电极为N极时，N极需要与接地端抵接设置，因此只需要将N极上的任一点与接地端对齐且连接即可，不需要辨别发光器件的正反方向，只需要将位于外侧的N极与接地端抵接对齐，就能实现发光器件的转移。\n\n[0062]在一种实施例中，将所述发光器件1转移到第二衬底101的步骤还包括：提供的所述发光器件1的所述第一电极50为N极且所述第二电极60为P极时，将所述第二电极60与所述源极1051对齐抵接设置。\n\n[0063]在本实施例中，当发光器件的第二电极为P极时，P极需要与源极抵接设置，因此只需要将P极上的任一点与源极对齐且连接即可，不需要辨别发光器件的正反方向，只需要将位于外侧的P极与源极抵接对齐，就能实现发光器件的转移。\n\n[0064]如图5、图6所示，本申请提供的所述显示面板2包括第二衬底101、设置在第二衬底101上的TFT器件(图中未标注)、以及设置在第二衬底101上的所述发光器件1，TFT器件(图中未标注)包括所述源极1051、以及所述接地端1053，所述发光器件1包括所述第一电极50、以及围绕所述第一电极50设置的所述第二电极60，所述第二电极60关于所述第一电极50呈对称设置，其中，当所述第一电极50为P极时，所述第一电极50与所述源极1051抵接设置，所述第二电极60与所述接地端1053抵接设置，或当所述第一电极50为N极时，所述第一电极50与所述接地端1053抵接设置，所述第二电极60与所述源极1051抵接设置。\n\n[0065]在本实施例中，所述显示面板2包括第二衬底101、设置在第二衬底101上的TFT器件(图中未标注)、以及设置在第二衬底101上的所述发光器件1，TFT器件(图中未标注)包括所述源极1051、以及所述接地端1053，所述发光器件1包括所述第一电极50、以及围绕所述第一电极50设置的所述第二电极60，所述第二电极60关于所述第一电极50呈对称设置，其中，当所述第一电极50为P极时，所述第一电极50与所述源极1051抵接设置，所述第二电极60与所述接地端1053抵接设置，或当所述第一电极50为N极时，所述第一电极50与所述接地端1053抵接设置，所述第二电极60与所述源极1051抵接设置；通过将miniLED设置为所述第二电极60围绕所述第一电极50设置，只需要判定所述第二电极60为N极或P极，然后将所述第二电极60与TFT器件(图中未标注)的对应电极抵接对齐，降低了巨量转移制程的难度。\n\n[0066]其中，TFT器件(图中未标注)包括栅极102、栅绝缘层103、半导体层104、所述源极1051、漏极1052、钝化层106。\n\n[0067]其中，在TFT器件(图中未标注)上方还设置有黑色矩阵层107。\n\n[0068]其中，黑色矩阵层和所述发光器件1上方还包括第二封装层108。\n\n[0069]在一种实施例中，当所述第一电极50为N极时，所述第一电极50与所述接地端1053抵接设置，所述第二电极60与所述源极1051抵接设置。\n\n[0070]其中，当所述第一电极50为N极时，所述第二电极60为P极.\n\n[0071]其中，所述第二电极60与所述源极1051抵接对齐设置。\n\n[0072]在本实施例中，P极围绕N极设置，且P极与N极之间还包括所述PN绝缘层70，通过将P极和N极设置为围绕且绝缘的结构，将P极与N极区分开，同时P极为圆环状，P极上的任一点到N极的中心点的距离相等，因此，只需要选择P极上的任一点与TFT器件(图中未标注)的所述源极1051抵接对齐，则N极与所述接地端1053对齐，降低了巨量转移miniLED的时间。\n\n[0073]在一种实施例中，在所述显示面板中，所述第一电极50和所述第二电极60之间还设置有PN绝缘层70。\n\n[0074]在一种实施例中，在所述显示面板中，所述第一电极50为P极/N极，所述第二电极60为N极/P极。\n\n[0075]在一种实施例中，在所述显示面板中，所述第二电极60围绕所述第一电极50设置，且所述第二电极60上的任一点到所述第一电极50中心点的距离相等。\n\n[0076]在一种实施例中，在所述显示面板中，在同一截面内，所述第一电极50的宽度大于或等于任一位置的所述第二电极60的宽度。\n\n[0077]在一种实施例中，在所述显示面板中，所述第二电极60远离所述第一电极50的一侧表面还设置有第一封装层80，所述第一封装层80围绕所述第二电极60设置。\n\n[0078]在一种实施例中，当所述第一电极50为P极时所述第一电极50与所述源极1051抵接设置，所述第二电极60与所述接地端1053抵接设置。\n\n[0079]其中，当所述第一电极50为P极时，所述第二电极60为N极。\n\n[0080]其中，所述第一电极50与所述源极1051抵接对齐设置。\n\n[0081]在本实施例中，N极围绕P极设置，且P极与N极之间还包括所述PN绝缘层70，通过将P极和N极设置为围绕且绝缘的结构，将P极与N极区分开，同时N极为圆环状，N极上的任一点到P极的中心点的距离相等，因此，只需要选择N极上的任一点与TFT器件(图中未标注)的所述接地端1053抵接对齐，则P极与所述接地端1053对齐，降低了巨量转移miniLED的时间。\n\n[0082]本申请提供所述第一电极50为P极、所述第二电极60为N极的所述发光器件1，以及所述第一电极50为N极、所述第二电极60为P极的所述发光器件1，通过实际需要选择一种所述发光器件1，只需要判断所述第二电极60与TFT器件(图中未标注)之间的连接关系即可。\n\n[0083]本实施例提供的发光器件包括第一衬底、设置在所述第一衬底上的N型接触层、设置在所述N型接触层上的所述有源层30、设置在所述有源层30上的P型接触层，其中所述P型接触层上还设置有第一电极、以及围绕所述第一电极设置的第二电极；通过将第二电极围绕所述第一电极设置，且第二电极上的任一点到所述第一电极的中心点等间距位置，将第二电极上的任一点与TFT器件的对应电极抵接对齐，就能完成miniLED的转移，降低了发光器件的巨量转移制程的难度。\n\n[0084]以上对本申请实施例所提供的一种miniLED和一种显示面板及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示面板技术领域，具体涉及一种发光器件和一种显示面板以及一种显示面板制备方法。\n\n背景技术\n\n[0002]Micro LED和Mini LED在显示的亮度，色域、残影、功耗、寿命等方面优于现有的OLED和LCD显示装置，但是目前量产的技术瓶颈在于巨量转移制程，现有的技术无法在较小的节拍时间内将大量发光器件安装在驱动板(包括第一衬底和TFT器件)的对应位置。\n\n[0003]同时，现有的发光器件多是PN级轴对称设计，这种设计使得设备在转移LED时需要按照正确方向对准安装LED元件，极大的增大转移难度和repair的难度。\n\n[0004]因此，现有显示面板存在巨量转移发光器件的对准难度大的技术问题。\n\n发明内容\n\n[0005]本申请实施例提供一种发光器件和一种显示面板制备方法，可以缓解现有显示面板存在巨量转移发光器件的对准难度大的技术问题。\n\n[0006]本申请提供一种发光器件，包括：\n\n[0007]第一衬底；\n\n[0008]设置在所述第一衬底上的N型接触层；\n\n[0009]设置在所述N型接触层上的有源层；\n\n[0010]设置在所述有源层上的P型接触层；\n\n[0011]其中，所述P型接触层上还设置有第一电极、以及围绕所述第一电极设置的第二电极。\n\n[0012]可选的，在本申请的一些实施例中，所述第一电极和所述第二电极之间还设置有PN绝缘层。\n\n[0013]可选的，在本申请的一些实施例中，所述第一电极为P极/N极，所述第二电极为N极/P极。\n\n[0014]可选的，在本申请的一些实施例中，所述第二电极围绕所述第一电极设置，且所述第二电极上的任一点到所述第一电极中心点的距离相等。\n\n[0015]可选的，在本申请的一些实施例中，在同一截面内，所述第一电极的宽度大于或等于任一位置的所述第二电极的宽度。\n\n[0016]可选的，在本申请的一些实施例中，所述第二电极远离所述第一电极的一侧表面还设置有第一封装层，所述第一封装层围绕所述第二电极设置。\n\n[0017]本申请提供一种显示面板，包括：\n\n[0018]第二衬底；\n\n[0019]设置在所述第二衬底上的TFT器件，所述TFT器件包括源极、以及接地端；\n\n[0020]设置在所述第二衬底上的发光器件，所述发光器件包括第一电极、以及围绕所述第一电极设置的第二电极；\n\n[0021]其中，当所述第一电极为P极时，所述第一电极与所述源极抵接设置，所述第二电极与所述接地端抵接设置，或当所述第一电极为N极时，所述第一电极与所述接地端抵接设置，所述第二电极与所述源极抵接设置。\n\n[0022]本申请提供一种显示面板制备方法，包括：\n\n[0023]提供第二衬底；\n\n[0024]在所述第二衬底上制备得到TFT器件；\n\n[0025]提供发光器件，所述发光器件包括第一电极、以及围绕所述第一电极设置的第二电极，所述第二电极关于所述第一电极呈对称设置；\n\n[0026]将所述发光器件转移到第二衬底上，使P极与源极抵接，N极与接地端抵接。\n\n[0027]可选的，在本申请的一些实施例中，将所述发光器件转移到第二衬底的步骤还包括：提供的发光器件的第一电极为P极且第二电极为N极时，将所述第二电极与所述接地端对齐抵接设置。\n\n[0028]可选的，在本申请的一些实施例中，将所述发光器件转移到第二衬底的步骤还包括：提供的发光器件的第一电极为N极且第二电极为P极时，将所述第二电极与所述源极对齐抵接设置。\n\n[0029]本申请实施例提供的发光器件包括第一衬底、设置在所述第一衬底上的N型接触层、设置在所述N型接触层上的有源层、设置在所述有源层上的P型接触层，其中所述P型接触层上还设置有第一电极、以及围绕所述第一电极设置的第二电极；通过将第二电极围绕所述第一电极设置，且第二电极上的任一点到所述第一电极的中心点等间距位置，将第二电极上的任一点与TFT器件的对应电极抵接对齐，就能完成miniLED的转移，降低了发光器件的巨量转移制程的难度。\n\n附图说明\n\n[0030]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0031]图1是本申请实施例提供的发光器件的第一种截面示意图；\n\n[0032]图2是本申请实施例提供的发光器件的第二种截面示意图；\n\n[0033]图3是本申请实施例提供的发光器件的俯视示意图；\n\n[0034]图4是本申请实施例提供的显示面板制备方法的流程图；\n\n[0035]图5是本申请实施例提供的显示面板的第一种截面示意图；\n\n[0036]图6是本申请实施例提供的显示面板的第二种截面示意图。\n\n[0037]附图标记说明：\n\n[0038]\n\n[0039]\n\n具体实施方式\n\n[0040]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0041]本申请实施例提供一种发光器件和一种显示面板及其制备方法。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0042]如图1、图2所示，本申请实施例提供的所述发光器件1包括所述第一衬底10、设置在所述第一衬底10上的所述N型接触层20、设置在所述N型接触层20上的所述有源层30、设置在所述有源层30上的所述P型接触层40，其中，所述P型接触层40上还设置有所述第一电极50、以及围绕所述第一电极50设置的所述第二电极60。\n\n[0043]在本实施例中，所述发光器件1包括所述第一衬底10、设置在所述第一衬底10上的所述N型接触层20、设置在所述N型接触层20上的所述有源层30、设置在所述有源层30上的所述P型接触层40，其中所述P型接触层40上还设置有所述第一电极50、以及围绕所述第一电极50设置的所述第二电极60；通过将所述第二电极60围绕所述第一电极50设置，且所述第二电极60上的任一点到所述第一电极50的中心点(图中未标注)等间距位置，将所述第二电极60上的任一点与TFT器件(图中未标注)的对应电极抵接对齐，就能完成miniLED的转移，降低了所述发光器件1的巨量转移制程的难度。\n\n[0044]其中，如图1所示，当所述第一电极50为P极、所述第二电极60为N极时，所述第二电极60与TFT器件(图中未标注)的所述接地端1053抵接对齐；所述第一电极50通过过孔与所述P型接触层40连接，所述第二电极60通过过孔与N型接触层20连接。\n\n[0045]其中，如图2所示，当所述第一电极50为N极、所述第二电极60为P极时，所述第二电极60与TFT器件(图中未标注)的所述源极1051抵接对齐；所述第一电极50通过过孔与N型接触层20连接，所述第二电极60通过过孔与所述P型接触层40连接。\n\n[0046]在一种实施例中，如图3所示，所述第一电极50和所述第二电极60之间还设置有所述PN绝缘层70。\n\n[0047]其中，所述发光器件1还包括所述PN绝缘层70，所述PN绝缘层70围绕并贴合所述第二电极60层设置。\n\n[0048]其中，所述第一电极50为圆柱状结构，所述第二电极60为圆环状结构。\n\n[0049]在一种实施例中，所述第一电极50为P极，所述第二电极60为N极。\n\n[0050]在一种实施例中，所述第一电极50为N极，所述第二电极60为P极。\n\n[0051]在一种实施例中，所述第二电极60围绕所述第一电极50设置，且所述第二电极60上的任一点到所述第一电极50中心点的距离相等。\n\n[0052]在一种实施例中，在同一截面内，所述第一电极50的宽度大于或等于任一所述第二电极60的宽度。\n\n[0053]在一种实施例中，所述第二电极60远离所述第一电极50的一侧表面还设置有所述第一封装层80，所述第一封装层80围绕所述第二电极60设置。\n\n[0054]在一种实施例中，所述P型接触层40的制备材料包括氮化镓，且/或所述N型接触层20的制备材料包括氮化镓。\n\n[0055]如图4所示，本申请提供的所述显示面板2制备方法包括：\n\n[0056]S1:提供第二衬底101；\n\n[0057]S2:在第二衬底101上制备得到TFT器件(图中未标注)；\n\n[0058]S3:提供所述发光器件1，所述发光器件1包括所述第一电极50、以及围绕所述第一电极50设置的所述第二电极60，所述第二电极60关于所述第一电极50呈对称设置；\n\n[0059]S4:将所述发光器件1转移到第二衬底101上，使P极与所述源极1051抵接，N极与所述接地端1053抵接。\n\n[0060]在一种实施例中，将所述发光器件1转移到第二衬底101的步骤还包括：提供的所述发光器件1的所述第一电极50为P极且所述第二电极60为N极时，将所述第二电极60与所述接地端1053对齐抵接设置。\n\n[0061]在本实施例中，当发光器件的第二电极为N极时，N极需要与接地端抵接设置，因此只需要将N极上的任一点与接地端对齐且连接即可，不需要辨别发光器件的正反方向，只需要将位于外侧的N极与接地端抵接对齐，就能实现发光器件的转移。\n\n[0062]在一种实施例中，将所述发光器件1转移到第二衬底101的步骤还包括：提供的所述发光器件1的所述第一电极50为N极且所述第二电极60为P极时，将所述第二电极60与所述源极1051对齐抵接设置。\n\n[0063]在本实施例中，当发光器件的第二电极为P极时，P极需要与源极抵接设置，因此只需要将P极上的任一点与源极对齐且连接即可，不需要辨别发光器件的正反方向，只需要将位于外侧的P极与源极抵接对齐，就能实现发光器件的转移。\n\n[0064]如图5、图6所示，本申请提供的所述显示面板2包括第二衬底101、设置在第二衬底101上的TFT器件(图中未标注)、以及设置在第二衬底101上的所述发光器件1，TFT器件(图中未标注)包括所述源极1051、以及所述接地端1053，所述发光器件1包括所述第一电极50、以及围绕所述第一电极50设置的所述第二电极60，所述第二电极60关于所述第一电极50呈对称设置，其中，当所述第一电极50为P极时，所述第一电极50与所述源极1051抵接设置，所述第二电极60与所述接地端1053抵接设置，或当所述第一电极50为N极时，所述第一电极50与所述接地端1053抵接设置，所述第二电极60与所述源极1051抵接设置。\n\n[0065]在本实施例中，所述显示面板2包括第二衬底101、设置在第二衬底101上的TFT器件(图中未标注)、以及设置在第二衬底101上的所述发光器件1，TFT器件(图中未标注)包括所述源极1051、以及所述接地端1053，所述发光器件1包括所述第一电极50、以及围绕所述第一电极50设置的所述第二电极60，所述第二电极60关于所述第一电极50呈对称设置，其中，当所述第一电极50为P极时，所述第一电极50与所述源极1051抵接设置，所述第二电极60与所述接地端1053抵接设置，或当所述第一电极50为N极时，所述第一电极50与所述接地端1053抵接设置，所述第二电极60与所述源极1051抵接设置；通过将miniLED设置为所述第二电极60围绕所述第一电极50设置，只需要判定所述第二电极60为N极或P极，然后将所述第二电极60与TFT器件(图中未标注)的对应电极抵接对齐，降低了巨量转移制程的难度。\n\n[0066]其中，TFT器件(图中未标注)包括栅极102、栅绝缘层103、半导体层104、所述源极1051、漏极1052、钝化层106。\n\n[0067]其中，在TFT器件(图中未标注)上方还设置有黑色矩阵层107。\n\n[0068]其中，黑色矩阵层和所述发光器件1上方还包括第二封装层108。\n\n[0069]在一种实施例中，当所述第一电极50为N极时，所述第一电极50与所述接地端1053抵接设置，所述第二电极60与所述源极1051抵接设置。\n\n[0070]其中，当所述第一电极50为N极时，所述第二电极60为P极.\n\n[0071]其中，所述第二电极60与所述源极1051抵接对齐设置。\n\n[0072]在本实施例中，P极围绕N极设置，且P极与N极之间还包括所述PN绝缘层70，通过将P极和N极设置为围绕且绝缘的结构，将P极与N极区分开，同时P极为圆环状，P极上的任一点到N极的中心点的距离相等，因此，只需要选择P极上的任一点与TFT器件(图中未标注)的所述源极1051抵接对齐，则N极与所述接地端1053对齐，降低了巨量转移miniLED的时间。\n\n[0073]在一种实施例中，在所述显示面板中，所述第一电极50和所述第二电极60之间还设置有PN绝缘层70。\n\n[0074]在一种实施例中，在所述显示面板中，所述第一电极50为P极/N极，所述第二电极60为N极/P极。\n\n[0075]在一种实施例中，在所述显示面板中，所述第二电极60围绕所述第一电极50设置，且所述第二电极60上的任一点到所述第一电极50中心点的距离相等。\n\n[0076]在一种实施例中，在所述显示面板中，在同一截面内，所述第一电极50的宽度大于或等于任一位置的所述第二电极60的宽度。\n\n[0077]在一种实施例中，在所述显示面板中，所述第二电极60远离所述第一电极50的一侧表面还设置有第一封装层80，所述第一封装层80围绕所述第二电极60设置。\n\n[0078]在一种实施例中，当所述第一电极50为P极时所述第一电极50与所述源极1051抵接设置，所述第二电极60与所述接地端1053抵接设置。\n\n[0079]其中，当所述第一电极50为P极时，所述第二电极60为N极。\n\n[0080]其中，所述第一电极50与所述源极1051抵接对齐设置。\n\n[0081]在本实施例中，N极围绕P极设置，且P极与N极之间还包括所述PN绝缘层70，通过将P极和N极设置为围绕且绝缘的结构，将P极与N极区分开，同时N极为圆环状，N极上的任一点到P极的中心点的距离相等，因此，只需要选择N极上的任一点与TFT器件(图中未标注)的所述接地端1053抵接对齐，则P极与所述接地端1053对齐，降低了巨量转移miniLED的时间。\n\n[0082]本申请提供所述第一电极50为P极、所述第二电极60为N极的所述发光器件1，以及所述第一电极50为N极、所述第二电极60为P极的所述发光器件1，通过实际需要选择一种所述发光器件1，只需要判断所述第二电极60与TFT器件(图中未标注)之间的连接关系即可。\n\n[0083]本实施例提供的发光器件包括第一衬底、设置在所述第一衬底上的N型接触层、设置在所述N型接触层上的所述有源层30、设置在所述有源层30上的P型接触层，其中所述P型接触层上还设置有第一电极、以及围绕所述第一电极设置的第二电极；通过将第二电极围绕所述第一电极设置，且第二电极上的任一点到所述第一电极的中心点等间距位置，将第二电极上的任一点与TFT器件的对应电极抵接对齐，就能完成miniLED的转移，降低了发光器件的巨量转移制程的难度。\n\n[0084]以上对本申请实施例所提供的一种miniLED和一种显示面板及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10948, 24002, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示面板、生物检测方法及显示装置。\n\n背景技术\n\n[0002]在中小尺寸显示领域，全面屏技术成为当前的重点研究方向。第一代全面屏技术主要集中于屏幕尺寸比例由16:9变化为18+:9，第二代全面屏技术则是进一步地压缩屏幕上下左右的边框，甚至采用柔性折叠技术最大化可视面积，而近期全面屏技术的另一个研究方向则是如何将显示终端的指纹识别、摄像头、面部识别、距离传感等传感器进一步地融合进显示面板的显示区，使得显示面板从单纯的显示界面逐渐过渡到全面的感知、交互界面。\n\n[0003]目前主流的显示技术包括LCD(Liquid Crystal Display，液晶显示器)显示技术和OLED(Organic Light Emitting Diode，有机发光二极管)显示技术，其中LCD显示技术为被动发光技术，通过整面背光模组照射液晶盒实现光线的亮暗控制，而OLED显示技术则是采用逐颗的OLED像素主动发光，相较LCD而言，OLED具有高对比、轻薄、可弯曲、可折叠等优势。因此，如何通过实现LCD屏内传感技术从而增加LCD显示技术的竞争优势成为当前的重要研究方向。\n\n发明内容\n\n[0004]本发明实施例提供一种显示面板，用于解决现有技术的显示面板无法实现屏内传感技术的技术问题。\n\n[0005]本发明实施例提供一种显示面板，包括第一基板、与所述第一基板相对设置的第二基板、设置在所述第一基板面向所述第二基板的一侧的至少一光传感器以及与所述光传感器同侧并围绕所述光传感器设置的至少一生物检测光源，其中，所述光传感器用于接收所述生物检测光源发出的光经生物反射后的反射光。\n\n[0006]在本发明实施例提供的显示面板中，所述显示面板包括显示区，所述光传感器设置于所述显示区内，所述显示区内设置有多个阵列分布的像素单元，所述多个像素单元在所述第一基板上的正投影与所述光传感器在所述第一基板上的正投影无重叠。\n\n[0007]在本发明实施例提供的显示面板中，所述像素单元包括红色子像素、绿色子像素以及蓝色子像素，所述绿色子像素复用为所述生物检测光源。\n\n[0008]在本发明实施例提供的显示面板中，所述显示面板包括围绕显示区的边框区，所述光传感器和所述生物检测光源均设置于所述边框区内。\n\n[0009]在本发明实施例提供的显示面板中，所述生物检测光源为绿色微发光二极管。\n\n[0010]在本发明实施例提供的显示面板中，所述第二基板面向所述第一基板的一侧且对应于所述绿色微发光二极管的设置区形成有凹槽。\n\n[0011]在本发明实施例提供的显示面板中，所述光传感器与所述生物检测光源之间设置有光阻挡层。\n\n[0012]本发明实施例提供一种生物检测方法，包括步骤：提供一显示面板，所述显示面板包括第一基板、与所述第一基板相对设置的第二基板、设置在所述第一基板面向所述第二基板的一侧的至少一光传感器以及与所述光传感器同侧并围绕所述光传感器设置的至少一生物检测光源，其中，所述光传感器用于接收所述生物检测光源发出的光经生物反射后的反射光；采用所述显示面板检测是否有生物触摸；若是，则控制所述生物检测光源开启一定时间，并控制所述光传感器接收所述生物检测光源发出的光经所述生物反射后的反射光。\n\n[0013]在本发明实施例提供的生物检测方法中，所述一定时间大于或等于10秒且小于或等于20秒。\n\n[0014]本发明实施例还提供一种显示装置，包括上述的显示面板以及设置于所述显示面板之下的背光模组。\n\n[0015]有益效果：本发明实施例提供的一种显示面板，包括第一基板、与所述第一基板相对设置的第二基板、设置在所述第一基板面向所述第二基板的一侧的至少一光传感器以及与所述光传感器同侧并围绕所述光传感器设置的至少一生物检测光源，其中，所述光传感器用于接收所述生物检测光源发出的光经生物反射后的反射光。本发明实施例通过在显示面板内设置光传感器和生物检测光源，当要检测生物时，控制生物检测光源开启，控制光传感器接收生物检测光源发出的光经生物反射后的反射光，从而实现生物检测功能，即为显示面板提供了生物检测功能的附加性能，提升了产品竞争力。\n\n附图说明\n\n[0016]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。\n\n[0017]图1是本发明实施例提供的显示面板的纵截面示意图。\n\n[0018]图2是本发明实施例提供的显示面板的俯视图。\n\n[0019]图3是本发明实施例提供的另一显示面板的俯视图。\n\n[0020]图4是本发明实施例提供的第二基板的基本结构示意图。\n\n[0021]图5是本发明实施例提供的另一显示面板的纵截面示意图。\n\n[0022]图6是本发明实施例提供的又一显示面板的纵截面示意图。\n\n[0023]图7是本发明实施例提供的另一显示面板与又一显示面板的模数转换数据的曲线对比图。\n\n[0024]图8是本发明实施例提供的生物检测方法的流程图。\n\n具体实施方式\n\n[0025]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。在附图中，为了清晰及便于理解和描述，附图中绘示的组件的尺寸和厚度并未按照比例。\n\n[0026]如图1所示，为本发明实施例提供的显示面板的纵截面示意图，所述显示面板100包括第一基板10、与所述第一基板10相对设置的第二基板20、设置在所述第一基板10面向所述第二基板20的一侧的至少一光传感器30以及与所述光传感器30同侧并围绕所述光传感器30设置的至少一生物检测光源40，其中，所述光传感器30用于接收所述生物检测光源40发出的光经生物50反射后的反射光。\n\n[0027]需要说明的是，所述第一基板10为阵列基板，所述第二基板20为彩膜基板，纵截面指的是垂直于所述第一基板10、所述第二基板20所在平面的平面。其中，所述光传感器30是设置在阵列基板面向彩膜基板的一侧(即集成在显示面板100内部)，所述光传感器30是用于接收经所述生物检测光源40发出的光经生物50(此处指的是皮肤，例如人的手)反射后的反射光，以实现生物检测性能，增加产品的功能性，提升产品的竞争优势。\n\n[0028]需要说明的是，所述生物检测光源40的数量至少为1个，图1中以2个为例进行说明，其中，所述生物检测光源40可以复用显示像素的光，也可以另外设置其他光源，例如微发光二极管、红外光源等，与此相对应的，选择可以检测到相应光源类型的光传感器。\n\n[0029]需要说明的是，本发明实施例提供的显示面板100的生物检测性能可以为心率检测，也可以用于检测指纹、血氧等需要通过光学信号检测的检测样本。当需要进行心率检测时，使用者可以将手指按压在相应的检测区域，此时控制所述生物检测光源40开启并持续一定时间，同时采用所述光传感器30接收经使用者的手指反射后的反射光信号，由于使用者每一次心脏收缩、舒张反射后的光信号的光强不同，从而可以获得一组数据，从而可以计算出心率。其中，所述生物检测光源40的光强和中心波长可依据所述光传感器30的响应能力进行调整。\n\n[0030]在一种实施例中，请参阅图2，为本发明实施例提供的显示面板的俯视图，所述显示面板100包括显示区A1，所述光传感器30设置于所述显示区A1内，所述显示区A1内设置有多个阵列分布的像素单元60，所述多个像素单元60在第一基板10(如图1)上的正投影与所述光传感器30在所述第一基板10上的正投影无重叠。\n\n[0031]需要说明的是，任一所述像素单元60均由3个子像素(R、G、B)构成，即任一所述像素单元60均包括红色子像素601、绿色子像素602以及蓝色子像素603。其中，背光模组(未图示)提供背光源，每一个子像素均对应一个像素电极(未图示)，通过控制相应的像素电极的电压，从而控制液晶分子(未图示)的翻转角度，从而控制背光源的光线是否通过，从而控制相应颜色的子像素发光。\n\n[0032]在一种实施例中，当需要进行生物检测时，所述绿色子像素602可以复用为所述生物检测光源40，即需要进行生物检测时，控制所述绿色子像素602发光，所述绿色子像素602发出的光经生物反射后的反射光被所述光传感器30接收到，从而可实现生物检测性能，而且无需额外设置其他光源，所述光传感器30设置在像素单元60的间隙内，也不影响显示效果。本实施例通过在阵列基板上设置所述光传感器30，同时利用绿色子像素602发光，为显示面板100提供生物检测功能的附加值，提升了产品竞争力，\n\n[0033]在一种实施例中，请参阅图3，为本发明实施例提供的另一显示面板的俯视图，所述显示面板100包括围绕显示区A1的边框区A2，所述光传感器30和所述生物检测光源40均设置于所述边框区A2内。\n\n[0034]可以理解的是，本实施例通过将所述光传感器30和所述生物检测光源40均设置于边框区A2内，不会对显示区A1造成影响，对面板制程的改动较小。当需要进行生物检测时，只需用手指握持住显示面板100的边框区A2，就能进行检测，不用特意去按压显示区A1，检测体验更好。\n\n[0035]在一种实施例中，所述生物检测光源40为绿色微发光二极管。具体的，在阵列基板上的边框区A2内制备光传感器30时，电路走线除了光传感器30的信号线外，还需预留所述绿色微发光二极管的绑定端子，后续将所述绿色微发光二极管转移到所述绑定端子上，作为生物检测光源40。由于外置的绿色微发光二极管的波长可调性以及光源强度可调范围更广，因此，可提高显示面板100的生物检测的灵敏度。\n\n[0036]在一种实施例中，请参阅图4，为本发明实施例提供的第二基板的基本结构示意图，所述第二基板20面向第一基板10(如图1)的一侧且对应于所述绿色微发光二极管(即所述生物检测光源40，如图3)的设置区形成有凹槽201。\n\n[0037]具体的，请参阅图5，为本发明实施例提供的另一显示面板的纵截面示意图，所述显示面板100包括第一基板10、与所述第一基板10相对设置的第二基板20、设置在所述第一基板10面向所述第二基板20的一侧的至少一光传感器30以及与所述光传感器30同侧并围绕所述光传感器30设置的至少一生物检测光源40，其中，所述光传感器30用于接收所述生物检测光源40发出的光经生物反射后的反射光。\n\n[0038]在本实施例中，所述光传感器30和所述生物检测光源40均设置在所述显示面板100的边框区A2(如图3)，所述生物检测光源40为绿色微发光二极管。其中，所述第二基板20面向所述第一基板10的一侧且对应于所述绿色微发光二极管(即所述生物检测光源40)的设置区形成有凹槽201。\n\n[0039]可以理解的是，所述绿色微发光二极管(即所述生物检测光源40)的高度大于所述光传感器30的高度，本实施例通过在第二基板20面向第一基板10的一侧且对应于所述绿色微发光二极管的设置区形成凹槽201，为所述绿色微发光二极管预留一定的空间，以弥补所述绿色微发光二极管与所述光传感器30之间的高度差，使得显示面板100的结构更稳固，也提高了所述绿色微发光二极管的寿命，而且所述绿色微发光二极管相对于子像素的尺寸更大，对对位精度的要求并不高，装配起来更加简便。\n\n[0040]在一种实施例中，请参阅图6，为本发明实施例提供的又一显示面板的纵截面示意图，所述显示面板100包括第一基板10、与所述第一基板10相对设置的第二基板20、设置在所述第一基板10面向所述第二基板20的一侧的至少一光传感器30以及与所述光传感器30同侧并围绕所述光传感器30设置的至少一生物检测光源40，其中，所述光传感器30用于接收所述生物检测光源40发出的光经生物50反射后的反射光。\n\n[0041]在本实施例中，所述光传感器30和所述生物检测光源40均设置在所述显示面板100的边框区A2(如图3)，所述光传感器30与所述生物检测光源40之间设置有光阻挡层70。\n\n[0042]可以理解的是，由于所述光传感器30和所述生物检测光源40均设置在所述显示面板100的边框区A2，因此在所述光传感器30与所述生物检测光源40之间设置光阻挡层70，不仅不会影响显示区A1(如图3)的显示效果，而且可以避免所述光传感器30直接接收到未经所述生物50反射的光信号，即所述光阻挡层70可以遮挡未经所述生物50反射的光信号(即杂散光信号)，提高生物检测的准确度。在一种实施例中，所述光阻挡层70的材料为黑色光阻。\n\n[0043]接下来，请参阅图7，为本发明实施例提供的另一显示面板与又一显示面板的模数转换数据的曲线对比图，其中，横坐标表示检测的时间为0～8秒，纵坐标是将光传感器接收到的光信号转换而成的电信号，实线表示不设置光阻挡层(如图3)的测试数据，虚线表示设置有光阻挡层(如图6)的测试数据，从图中可以很明显的看出，由于光阻挡层可以减少杂散光信号，使整体信号的信噪比更高，更有利于生物检测反射光信号的采集，提高了生物检测的准确度。\n\n[0044]接下来，请参阅图8，为本发明实施例提供的生物检测方法的流程图，所述生物检测方法包括步骤：\n\n[0045]S1、提供一显示面板，所述显示面板包括第一基板、与所述第一基板相对设置的第二基板、设置在所述第一基板面向所述第二基板的一侧的至少一光传感器以及与所述光传感器同侧并围绕所述光传感器设置的至少一生物检测光源，其中，所述光传感器用于接收所述生物检测光源发出的光经生物反射后的反射光；\n\n[0046]S2、采用所述显示面板检测是否有生物触摸；\n\n[0047]S3、若是，则控制所述生物检测光源开启一定时间，并控制所述光传感器接收所述生物检测光源发出的光经所述生物反射后的反射光。\n\n[0048]其中，所述一定时间大于或等于10秒且小于或等于20秒。\n\n[0049]需要说明的是，所述第一基板为阵列基板，所述第二基板为彩膜基板。所述光传感器是设置在阵列基板面向彩膜基板的一侧(即集成在显示面板内部)，所述光传感器是用于接收经所述生物检测光源发出的光经生物(此处指的是皮肤，例如人的手)反射后的反射光，以实现生物检测性能，增加产品的功能性，提升产品的竞争优势。\n\n[0050]需要说明的是，所述生物检测光源的数量至少为1个，所述生物检测光源可以复用显示像素的光，也可以另外设置其他光源，例如微发光二极管、红外光源等，与此相对应的，选择可以检测到相应光源类型的光传感器。\n\n[0051]需要说明的是，本发明实施例提供的显示面板的生物检测性能可以为心率检测，也可以用于检测指纹、血氧等需要通过光学信号检测的检测样本。当需要进行心率检测时，使用者可以将手指按压在相应的检测区域，此时控制所述生物检测光源开启并持续一定时间，同时采用所述光传感器接收经使用者的手指反射后的反射光信号，由于使用者每一次心脏收缩、舒张反射后的光信号的光强不同，从而可以获得一组数据，从而可以计算出心率。其中，所述生物检测光源的光强和中心波长可依据所述光传感器的响应能力进行调整。\n\n[0052]本发明实施例还提供一种显示装置，包括上述的显示面板以及设置于所述显示面板之下的背光模组，所述显示面板的具体结构请参阅图1至图7及相关说明，此处不再赘述。本发明实施例提供的显示装置可以为：手机、平板电脑、笔记本电脑、数码相机、导航仪等具有显示功能的产品或部件。\n\n[0053]综上所述，本发明实施例提供的一种显示面板，包括第一基板、与所述第一基板相对设置的第二基板、设置在所述第一基板面向所述第二基板的一侧的至少一光传感器以及与所述光传感器同侧并围绕所述光传感器设置的至少一生物检测光源，其中，所述光传感器用于接收所述生物检测光源发出的光经生物反射后的反射光。本发明实施例通过在显示面板内设置光传感器和生物检测光源，当要检测生物时，控制生物检测光源开启，控制光传感器接收生物检测光源发出的光经生物反射后的反射光，从而实现生物检测功能，即为显示面板提供了生物检测功能的附加性能，提升了产品竞争力，解决了现有技术的显示面板无法实现屏内传感技术的技术问题。\n\n[0054]以上对本发明实施例所提供的一种显示面板、生物检测方法及显示装置进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示面板、生物检测方法及显示装置。\n\n背景技术\n\n[0002]在中小尺寸显示领域，全面屏技术成为当前的重点研究方向。第一代全面屏技术主要集中于屏幕尺寸比例由16:9变化为18+:9，第二代全面屏技术则是进一步地压缩屏幕上下左右的边框，甚至采用柔性折叠技术最大化可视面积，而近期全面屏技术的另一个研究方向则是如何将显示终端的指纹识别、摄像头、面部识别、距离传感等传感器进一步地融合进显示面板的显示区，使得显示面板从单纯的显示界面逐渐过渡到全面的感知、交互界面。\n\n[0003]目前主流的显示技术包括LCD(Liquid Crystal Display，液晶显示器)显示技术和OLED(Organic Light Emitting Diode，有机发光二极管)显示技术，其中LCD显示技术为被动发光技术，通过整面背光模组照射液晶盒实现光线的亮暗控制，而OLED显示技术则是采用逐颗的OLED像素主动发光，相较LCD而言，OLED具有高对比、轻薄、可弯曲、可折叠等优势。因此，如何通过实现LCD屏内传感技术从而增加LCD显示技术的竞争优势成为当前的重要研究方向。\n\n发明内容\n\n[0004]本发明实施例提供一种显示面板，用于解决现有技术的显示面板无法实现屏内传感技术的技术问题。\n\n[0005]本发明实施例提供一种显示面板，包括第一基板、与所述第一基板相对设置的第二基板、设置在所述第一基板面向所述第二基板的一侧的至少一光传感器以及与所述光传感器同侧并围绕所述光传感器设置的至少一生物检测光源，其中，所述光传感器用于接收所述生物检测光源发出的光经生物反射后的反射光。\n\n[0006]在本发明实施例提供的显示面板中，所述显示面板包括显示区，所述光传感器设置于所述显示区内，所述显示区内设置有多个阵列分布的像素单元，所述多个像素单元在所述第一基板上的正投影与所述光传感器在所述第一基板上的正投影无重叠。\n\n[0007]在本发明实施例提供的显示面板中，所述像素单元包括红色子像素、绿色子像素以及蓝色子像素，所述绿色子像素复用为所述生物检测光源。\n\n[0008]在本发明实施例提供的显示面板中，所述显示面板包括围绕显示区的边框区，所述光传感器和所述生物检测光源均设置于所述边框区内。\n\n[0009]在本发明实施例提供的显示面板中，所述生物检测光源为绿色微发光二极管。\n\n[0010]在本发明实施例提供的显示面板中，所述第二基板面向所述第一基板的一侧且对应于所述绿色微发光二极管的设置区形成有凹槽。\n\n[0011]在本发明实施例提供的显示面板中，所述光传感器与所述生物检测光源之间设置有光阻挡层。\n\n[0012]本发明实施例提供一种生物检测方法，包括步骤：提供一显示面板，所述显示面板包括第一基板、与所述第一基板相对设置的第二基板、设置在所述第一基板面向所述第二基板的一侧的至少一光传感器以及与所述光传感器同侧并围绕所述光传感器设置的至少一生物检测光源，其中，所述光传感器用于接收所述生物检测光源发出的光经生物反射后的反射光；采用所述显示面板检测是否有生物触摸；若是，则控制所述生物检测光源开启一定时间，并控制所述光传感器接收所述生物检测光源发出的光经所述生物反射后的反射光。\n\n[0013]在本发明实施例提供的生物检测方法中，所述一定时间大于或等于10秒且小于或等于20秒。\n\n[0014]本发明实施例还提供一种显示装置，包括上述的显示面板以及设置于所述显示面板之下的背光模组。\n\n[0015]有益效果：本发明实施例提供的一种显示面板，包括第一基板、与所述第一基板相对设置的第二基板、设置在所述第一基板面向所述第二基板的一侧的至少一光传感器以及与所述光传感器同侧并围绕所述光传感器设置的至少一生物检测光源，其中，所述光传感器用于接收所述生物检测光源发出的光经生物反射后的反射光。本发明实施例通过在显示面板内设置光传感器和生物检测光源，当要检测生物时，控制生物检测光源开启，控制光传感器接收生物检测光源发出的光经生物反射后的反射光，从而实现生物检测功能，即为显示面板提供了生物检测功能的附加性能，提升了产品竞争力。\n\n附图说明\n\n[0016]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。\n\n[0017]图1是本发明实施例提供的显示面板的纵截面示意图。\n\n[0018]图2是本发明实施例提供的显示面板的俯视图。\n\n[0019]图3是本发明实施例提供的另一显示面板的俯视图。\n\n[0020]图4是本发明实施例提供的第二基板的基本结构示意图。\n\n[0021]图5是本发明实施例提供的另一显示面板的纵截面示意图。\n\n[0022]图6是本发明实施例提供的又一显示面板的纵截面示意图。\n\n[0023]图7是本发明实施例提供的另一显示面板与又一显示面板的模数转换数据的曲线对比图。\n\n[0024]图8是本发明实施例提供的生物检测方法的流程图。\n\n具体实施方式\n\n[0025]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。在附图中，为了清晰及便于理解和描述，附图中绘示的组件的尺寸和厚度并未按照比例。\n\n[0026]如图1所示，为本发明实施例提供的显示面板的纵截面示意图，所述显示面板100包括第一基板10、与所述第一基板10相对设置的第二基板20、设置在所述第一基板10面向所述第二基板20的一侧的至少一光传感器30以及与所述光传感器30同侧并围绕所述光传感器30设置的至少一生物检测光源40，其中，所述光传感器30用于接收所述生物检测光源40发出的光经生物50反射后的反射光。\n\n[0027]需要说明的是，所述第一基板10为阵列基板，所述第二基板20为彩膜基板，纵截面指的是垂直于所述第一基板10、所述第二基板20所在平面的平面。其中，所述光传感器30是设置在阵列基板面向彩膜基板的一侧(即集成在显示面板100内部)，所述光传感器30是用于接收经所述生物检测光源40发出的光经生物50(此处指的是皮肤，例如人的手)反射后的反射光，以实现生物检测性能，增加产品的功能性，提升产品的竞争优势。\n\n[0028]需要说明的是，所述生物检测光源40的数量至少为1个，图1中以2个为例进行说明，其中，所述生物检测光源40可以复用显示像素的光，也可以另外设置其他光源，例如微发光二极管、红外光源等，与此相对应的，选择可以检测到相应光源类型的光传感器。\n\n[0029]需要说明的是，本发明实施例提供的显示面板100的生物检测性能可以为心率检测，也可以用于检测指纹、血氧等需要通过光学信号检测的检测样本。当需要进行心率检测时，使用者可以将手指按压在相应的检测区域，此时控制所述生物检测光源40开启并持续一定时间，同时采用所述光传感器30接收经使用者的手指反射后的反射光信号，由于使用者每一次心脏收缩、舒张反射后的光信号的光强不同，从而可以获得一组数据，从而可以计算出心率。其中，所述生物检测光源40的光强和中心波长可依据所述光传感器30的响应能力进行调整。\n\n[0030]在一种实施例中，请参阅图2，为本发明实施例提供的显示面板的俯视图，所述显示面板100包括显示区A1，所述光传感器30设置于所述显示区A1内，所述显示区A1内设置有多个阵列分布的像素单元60，所述多个像素单元60在第一基板10(如图1)上的正投影与所述光传感器30在所述第一基板10上的正投影无重叠。\n\n[0031]需要说明的是，任一所述像素单元60均由3个子像素(R、G、B)构成，即任一所述像素单元60均包括红色子像素601、绿色子像素602以及蓝色子像素603。其中，背光模组(未图示)提供背光源，每一个子像素均对应一个像素电极(未图示)，通过控制相应的像素电极的电压，从而控制液晶分子(未图示)的翻转角度，从而控制背光源的光线是否通过，从而控制相应颜色的子像素发光。\n\n[0032]在一种实施例中，当需要进行生物检测时，所述绿色子像素602可以复用为所述生物检测光源40，即需要进行生物检测时，控制所述绿色子像素602发光，所述绿色子像素602发出的光经生物反射后的反射光被所述光传感器30接收到，从而可实现生物检测性能，而且无需额外设置其他光源，所述光传感器30设置在像素单元60的间隙内，也不影响显示效果。本实施例通过在阵列基板上设置所述光传感器30，同时利用绿色子像素602发光，为显示面板100提供生物检测功能的附加值，提升了产品竞争力，\n\n[0033]在一种实施例中，请参阅图3，为本发明实施例提供的另一显示面板的俯视图，所述显示面板100包括围绕显示区A1的边框区A2，所述光传感器30和所述生物检测光源40均设置于所述边框区A2内。\n\n[0034]可以理解的是，本实施例通过将所述光传感器30和所述生物检测光源40均设置于边框区A2内，不会对显示区A1造成影响，对面板制程的改动较小。当需要进行生物检测时，只需用手指握持住显示面板100的边框区A2，就能进行检测，不用特意去按压显示区A1，检测体验更好。\n\n[0035]在一种实施例中，所述生物检测光源40为绿色微发光二极管。具体的，在阵列基板上的边框区A2内制备光传感器30时，电路走线除了光传感器30的信号线外，还需预留所述绿色微发光二极管的绑定端子，后续将所述绿色微发光二极管转移到所述绑定端子上，作为生物检测光源40。由于外置的绿色微发光二极管的波长可调性以及光源强度可调范围更广，因此，可提高显示面板100的生物检测的灵敏度。\n\n[0036]在一种实施例中，请参阅图4，为本发明实施例提供的第二基板的基本结构示意图，所述第二基板20面向第一基板10(如图1)的一侧且对应于所述绿色微发光二极管(即所述生物检测光源40，如图3)的设置区形成有凹槽201。\n\n[0037]具体的，请参阅图5，为本发明实施例提供的另一显示面板的纵截面示意图，所述显示面板100包括第一基板10、与所述第一基板10相对设置的第二基板20、设置在所述第一基板10面向所述第二基板20的一侧的至少一光传感器30以及与所述光传感器30同侧并围绕所述光传感器30设置的至少一生物检测光源40，其中，所述光传感器30用于接收所述生物检测光源40发出的光经生物反射后的反射光。\n\n[0038]在本实施例中，所述光传感器30和所述生物检测光源40均设置在所述显示面板100的边框区A2(如图3)，所述生物检测光源40为绿色微发光二极管。其中，所述第二基板20面向所述第一基板10的一侧且对应于所述绿色微发光二极管(即所述生物检测光源40)的设置区形成有凹槽201。\n\n[0039]可以理解的是，所述绿色微发光二极管(即所述生物检测光源40)的高度大于所述光传感器30的高度，本实施例通过在第二基板20面向第一基板10的一侧且对应于所述绿色微发光二极管的设置区形成凹槽201，为所述绿色微发光二极管预留一定的空间，以弥补所述绿色微发光二极管与所述光传感器30之间的高度差，使得显示面板100的结构更稳固，也提高了所述绿色微发光二极管的寿命，而且所述绿色微发光二极管相对于子像素的尺寸更大，对对位精度的要求并不高，装配起来更加简便。\n\n[0040]在一种实施例中，请参阅图6，为本发明实施例提供的又一显示面板的纵截面示意图，所述显示面板100包括第一基板10、与所述第一基板10相对设置的第二基板20、设置在所述第一基板10面向所述第二基板20的一侧的至少一光传感器30以及与所述光传感器30同侧并围绕所述光传感器30设置的至少一生物检测光源40，其中，所述光传感器30用于接收所述生物检测光源40发出的光经生物50反射后的反射光。\n\n[0041]在本实施例中，所述光传感器30和所述生物检测光源40均设置在所述显示面板100的边框区A2(如图3)，所述光传感器30与所述生物检测光源40之间设置有光阻挡层70。\n\n[0042]可以理解的是，由于所述光传感器30和所述生物检测光源40均设置在所述显示面板100的边框区A2，因此在所述光传感器30与所述生物检测光源40之间设置光阻挡层70，不仅不会影响显示区A1(如图3)的显示效果，而且可以避免所述光传感器30直接接收到未经所述生物50反射的光信号，即所述光阻挡层70可以遮挡未经所述生物50反射的光信号(即杂散光信号)，提高生物检测的准确度。在一种实施例中，所述光阻挡层70的材料为黑色光阻。\n\n[0043]接下来，请参阅图7，为本发明实施例提供的另一显示面板与又一显示面板的模数转换数据的曲线对比图，其中，横坐标表示检测的时间为0～8秒，纵坐标是将光传感器接收到的光信号转换而成的电信号，实线表示不设置光阻挡层(如图3)的测试数据，虚线表示设置有光阻挡层(如图6)的测试数据，从图中可以很明显的看出，由于光阻挡层可以减少杂散光信号，使整体信号的信噪比更高，更有利于生物检测反射光信号的采集，提高了生物检测的准确度。\n\n[0044]接下来，请参阅图8，为本发明实施例提供的生物检测方法的流程图，所述生物检测方法包括步骤：\n\n[0045]S1、提供一显示面板，所述显示面板包括第一基板、与所述第一基板相对设置的第二基板、设置在所述第一基板面向所述第二基板的一侧的至少一光传感器以及与所述光传感器同侧并围绕所述光传感器设置的至少一生物检测光源，其中，所述光传感器用于接收所述生物检测光源发出的光经生物反射后的反射光；\n\n[0046]S2、采用所述显示面板检测是否有生物触摸；\n\n[0047]S3、若是，则控制所述生物检测光源开启一定时间，并控制所述光传感器接收所述生物检测光源发出的光经所述生物反射后的反射光。\n\n[0048]其中，所述一定时间大于或等于10秒且小于或等于20秒。\n\n[0049]需要说明的是，所述第一基板为阵列基板，所述第二基板为彩膜基板。所述光传感器是设置在阵列基板面向彩膜基板的一侧(即集成在显示面板内部)，所述光传感器是用于接收经所述生物检测光源发出的光经生物(此处指的是皮肤，例如人的手)反射后的反射光，以实现生物检测性能，增加产品的功能性，提升产品的竞争优势。\n\n[0050]需要说明的是，所述生物检测光源的数量至少为1个，所述生物检测光源可以复用显示像素的光，也可以另外设置其他光源，例如微发光二极管、红外光源等，与此相对应的，选择可以检测到相应光源类型的光传感器。\n\n[0051]需要说明的是，本发明实施例提供的显示面板的生物检测性能可以为心率检测，也可以用于检测指纹、血氧等需要通过光学信号检测的检测样本。当需要进行心率检测时，使用者可以将手指按压在相应的检测区域，此时控制所述生物检测光源开启并持续一定时间，同时采用所述光传感器接收经使用者的手指反射后的反射光信号，由于使用者每一次心脏收缩、舒张反射后的光信号的光强不同，从而可以获得一组数据，从而可以计算出心率。其中，所述生物检测光源的光强和中心波长可依据所述光传感器的响应能力进行调整。\n\n[0052]本发明实施例还提供一种显示装置，包括上述的显示面板以及设置于所述显示面板之下的背光模组，所述显示面板的具体结构请参阅图1至图7及相关说明，此处不再赘述。本发明实施例提供的显示装置可以为：手机、平板电脑、笔记本电脑、数码相机、导航仪等具有显示功能的产品或部件。\n\n[0053]综上所述，本发明实施例提供的一种显示面板，包括第一基板、与所述第一基板相对设置的第二基板、设置在所述第一基板面向所述第二基板的一侧的至少一光传感器以及与所述光传感器同侧并围绕所述光传感器设置的至少一生物检测光源，其中，所述光传感器用于接收所述生物检测光源发出的光经生物反射后的反射光。本发明实施例通过在显示面板内设置光传感器和生物检测光源，当要检测生物时，控制生物检测光源开启，控制光传感器接收生物检测光源发出的光经生物反射后的反射光，从而实现生物检测功能，即为显示面板提供了生物检测功能的附加性能，提升了产品竞争力，解决了现有技术的显示面板无法实现屏内传感技术的技术问题。\n\n[0054]以上对本发明实施例所提供的一种显示面板、生物检测方法及显示装置进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。');
INSERT INTO `os_patent_instruction_text` VALUES (10949, 24003, '技术领域\n\n[0001]本发明涉及一种显示装置，尤涉及一种拼接显示装置。\n\n背景技术\n\n[0002]传统的液晶电视拼接电视墙方案一般釆用现场可编程门阵列(FPGA)芯片，根据拼接的液晶面板数量，开发专门的图像分割程序。以2x2电视墙为例，图像经过FPGA芯片处理后输出4路的晶体管-晶体管逻辑(TTL)视频信号，所述4路的信号分别输入到4块图像处理板，经过图像缩放等处理后直接输出到液晶面板。但是电视墙拼接的灵活性较差。\n\n[0003]另外，可采用另一种方式，以2x2电视墙为例，模拟CVBS/YPbPr信号输入到第一台液晶电视中，第一台液晶电视输出相同的CVBS/YPbPr信号到第二台液晶电视中，以此类推，四台液晶电视获得相同的模拟输入信号。每台液晶电视捕捉输入信号图像帧的不同区域，经过向上拉升等图像处理后输出到各自的液晶面板。但是成本较高。\n\n[0004]由于液晶面板制造工艺的原因，液晶面板显示区域到面板边界通常存在1～2厘米的空白区域(非显示区域)，当利用液晶电视进行电视墙拼接时，两台液晶电视间的非显示区域宽度将达到2至4厘米，显示效果差。\n\n[0005]故，有必要提供一种拼接显示装置，以解决现有技术所存在的问题。\n\n发明内容\n\n[0006]本发明的主要目的在于提供一种拼接显示装置，通过在网格支撑结构上设置多个拼接面板，能够简化面板拼接的设计，并提高面板拼接的稳定性。\n\n[0007]为达成本发明的前述目的，本发明一实施例提供一种拼接显示装置，所述拼接显示装置包括一基板、一网格支撑结构、多个拼接面板以及一控制单元，所述网格支撑结构设置在所述基板上，所述拼接面板排列设置在所述网格支撑结构上；其中所述网格支撑结构的表面形成多个横向信号接口及多个纵向信号接口，所述横向信号接口及所述纵向信号接口与相应的拼接面板电性连接；而且所述控制单元的纵向信号通过所述网格支撑结构的纵向信号接口传送至所述拼接面板，所述控制单元的横向信号通过所述网格支撑结构的横向信号接口传送至所述拼接面板。\n\n[0008]根据本发明一实施例，所述网格支撑结构包含多个横向支撑条以及多个纵向支撑条，所述横向支撑条以及所述纵向支撑条彼此交错且形成多个交叉点，每一个交叉点外围设置有相应的横向信号接口以及纵向信号接口。\n\n[0009]根据本发明一实施例，每一纵向支撑条设置有用于传送所述纵向信号的一纵向走线，每一横向支撑条设置有用于传送所述横向信号一横向走线。\n\n[0010]根据本发明一实施例，每一纵向支撑条以及每一横向支撑条为单一层电路板。\n\n[0011]根据本发明一实施例，每一纵向支撑条以及每一横向支撑条为前后交叠的多个电路板。\n\n[0012]根据本发明一实施例，所述拼接面板覆盖在相应的交叉点上，而且热插拔地与所述横向信号接口以及纵向信号接口电性连接。\n\n[0013]根据本发明一实施例，所述控制单元包含一总控制板、多个第二转板以及多个第一转板，所述总控制板电性连接所述第二转板以及所述第一转板，所述第二转板设置在所述纵向支撑条的一端，所述第一转板设置在所述横向支撑条的一端。\n\n[0014]根据本发明一实施例，所述第二转板与所述纵向支撑条之间通过至少一第一覆晶薄膜组件形成电性连接，所述第一转板与所述横向支撑条通过至少一第二覆晶薄膜组件形成电性连接。\n\n[0015]根据本发明一实施例，所述第一覆晶薄膜组件具有一第一面板端子、一第一转板端子以及一第一源极/栅极端，所述第一面板端子配置用以电性连接所述纵向支撑条的纵向走线，所述第一转板端子配置用以电性连接所述第二转板；及所述第二覆晶薄膜组件具有一第二面板端子、一第二转板端子以及一第二源极/栅极端，所述第二面板端子配置用以电性连接所述横向支撑条的横向走线，所述第二转板端子配置用以电性连接所述第一转板。\n\n[0016]根据本发明一实施例，所述拼接面板为有机发光二极管显示面板、微型发光二极管显示面板或次毫米发光二极管显示面板。\n\n[0017]与现有技术相比较，本发明通过在所述网格支撑结构上设置多个拼接面板，能够简化面板拼接的设计，并提高面板拼接的稳定性，而且利用所述控制单元作为总驱动系统，无需另外采用面板拼接的驱动系统，大大减少面板拼接的成本。另外，所述拼接面板配合地组合在所述横向信号接口以及所述纵向信号接口，使得面板拼接的灵活性高，适用性强。在显示过程中，所述拼接面板可支持热插拔，而且所述拼接面板之间的差异小，其中电阻电容(RC)的差异与距离相关，容易补偿，进而能够提高显示的质量。另外，通过将所述拼接面板作为模块化的拼接系统，在使用过程中，能够方便维护并减少维护成本。\n\n附图说明\n\n[0018]图1是根据本发明一实施例的一种拼接显示装置的示意图。\n\n[0019]图2是根据本发明一实施例的一种拼接显示装置的覆晶薄膜组件的配置的示意图。\n\n[0020]图3是根据本发明一实施例的一种拼接显示装置的纵向支撑条的一配置的示意图。\n\n[0021]图4是根据本发明一实施例的一种拼接显示装置的纵向支撑条的另一配置的示意图。\n\n[0022]图5是根据本发明一实施例的一种拼接显示装置的第一覆晶薄膜组件的示意图。\n\n[0023]图6是根据本发明一实施例的一种拼接显示装置的第二覆晶薄膜组件的示意图。\n\n具体实施方式\n\n[0024]以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。再者，本发明所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧面、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。\n\n[0025]请参照图1所示，为本发明一实施例的一种拼接显示装置的示意图，其中所述拼接显示装置包括一基板2、一网格支撑结构3、多个拼接面板4以及一控制单元5。本发明将于下文详细说明各实施例上述各组件的细部构造、组装关系及其运作原理。\n\n[0026]请参照图1及2所示，所述网格支撑结构3设置在所述基板2上，其中所述网格支撑结构3的表面形成多个横向信号接口301及多个纵向信号接口302，所述横向信号接口301及所述纵向信号接口302与相应的拼接面板4电性连接。\n\n[0027]具体而言，所述网格支撑结构3包含多个横向支撑条31以及多个纵向支撑条32，所述横向支撑条31以及所述纵向支撑条32彼此交错且形成多个交叉点X，每一个交叉点X外围设置有相应的横向信号接口301以及纵向信号接口302。在本实施例中，二横向信号接口301分别设置在每一个交叉点X的横向二侧，二纵向信号接口302分别设置在每一个交叉点X的纵向二侧。另外，每一横向支撑条31以及每一纵向支撑条32为前后交叠的多个电路板，如图3所示，显示多个纵向支撑条32前后交叠；或者，如图4所示，每一横向支撑条31以及每一纵向支撑条32为单一层电路板。\n\n[0028]请参照图1及2所示，所述拼接面板4排列设置在所述网格支撑结构3上，在本实施例中，所述拼接面板4为子面板，由PCB(Printed circuit board)基板或玻璃基板或二者混合而制成，对于不同尺寸的拼接需求，可以加减位于横向或纵向的数量，而且所述拼接面板4也可以组成任何形状。另外，所述拼接面板4为有机发光二极管显示面板、微型发光二极管显示面板或次毫米发光二极管显示面板。\n\n[0029]续参照图1及2所示，所述控制单元5的横向信号通过所述网格支撑结构3的横向信号接口301传送至所述拼接面板4，而且所述控制单元5的纵向信号通过所述网格支撑结构3的纵向信号接口302传送至所述拼接面板4。具体而言，每一横向支撑条31设置有用于传送所述横向信号的一横向走线311，每一纵向支撑条32设置有用于传送所述纵向信号的一纵向走线321。在本实施例中，每一拼接面板4覆盖在相应的交叉点X上，而且热插拔地与所述横向信号接口301以及纵向信号接口302电性连接。\n\n[0030]请参照图1、5及6所示，具体而言，所述控制单元5包含多个第一转板51、多个第二转板52以及一总控制板53，其中所述总控制板53电性连接所述第一转板51以及所述第二转板52，所述第一转板51设置在所述横向支撑条31的一端，所述第二转板52设置在所述纵向支撑条32的一端。在本实施例中，所述第一转板51与所述横向支撑条31通过至少一第一覆晶薄膜组件53形成电性连接，所述第二转板52与所述纵向支撑条32之间通过至少一第二覆晶薄膜组件54形成电性连接。\n\n[0031]续参照图1、5及6所示，进一步来说，所述第一覆晶薄膜组件53具有一第一面板端子531、一第一转板端子532以及一第一源极/栅极端533，所述第一面板端子531配置用以电性连接所述横向支撑条31的横向走线311，所述第一转板端子531配置用以电性连接所述第一转板51。另外，所述第二覆晶薄膜组件54具有一第二面板端子541、一第二转板端子542以及一第二源极/栅极端543，所述第二面板端子541配置用以电性连接所述纵向支撑条32的纵向走线321，所述第二转板端子542配置用以电性连接所述第二转板52。也就是说，所述第一覆晶薄膜组件53以及所述第二覆晶薄膜组件54的源极端或栅极端都可以使用现有的薄膜覆晶封装(Chip On Film,COF)进行驱动，通过上述方式在IC驱动能力之内可实现任意数量的级联。\n\n[0032]如上所述，本发明通过在所述网格支撑结构3上设置多个拼接面板4的设计，能够简化面板拼接的设计，并提高面板拼接的稳定性，而且利用所述控制单元5作为总驱动系统，无需另外采用面板拼接的驱动系统，大大减少面板拼接的成本。另外，所述拼接面板4配合地组合在所述横向信号接口301以及所述纵向信号接口302，使得面板拼接的灵活性高，适用性强。在显示过程中，所述拼接面板4可支持热插拔，而且所述拼接面板4之间的差异小，其中电阻电容(RC)的差异与距离相关，容易补偿，进而能够提高显示的质量。另外，通过将所述拼接面板4作为模块化的拼接系统，在使用过程中，能够方便维护并减少维护成本。\n\n[0033]本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。', '技术领域\n\n[0001]本发明涉及一种显示装置，尤涉及一种拼接显示装置。\n\n背景技术\n\n[0002]传统的液晶电视拼接电视墙方案一般釆用现场可编程门阵列(FPGA)芯片，根据拼接的液晶面板数量，开发专门的图像分割程序。以2x2电视墙为例，图像经过FPGA芯片处理后输出4路的晶体管-晶体管逻辑(TTL)视频信号，所述4路的信号分别输入到4块图像处理板，经过图像缩放等处理后直接输出到液晶面板。但是电视墙拼接的灵活性较差。\n\n[0003]另外，可采用另一种方式，以2x2电视墙为例，模拟CVBS/YPbPr信号输入到第一台液晶电视中，第一台液晶电视输出相同的CVBS/YPbPr信号到第二台液晶电视中，以此类推，四台液晶电视获得相同的模拟输入信号。每台液晶电视捕捉输入信号图像帧的不同区域，经过向上拉升等图像处理后输出到各自的液晶面板。但是成本较高。\n\n[0004]由于液晶面板制造工艺的原因，液晶面板显示区域到面板边界通常存在1～2厘米的空白区域(非显示区域)，当利用液晶电视进行电视墙拼接时，两台液晶电视间的非显示区域宽度将达到2至4厘米，显示效果差。\n\n[0005]故，有必要提供一种拼接显示装置，以解决现有技术所存在的问题。\n\n发明内容\n\n[0006]本发明的主要目的在于提供一种拼接显示装置，通过在网格支撑结构上设置多个拼接面板，能够简化面板拼接的设计，并提高面板拼接的稳定性。\n\n[0007]为达成本发明的前述目的，本发明一实施例提供一种拼接显示装置，所述拼接显示装置包括一基板、一网格支撑结构、多个拼接面板以及一控制单元，所述网格支撑结构设置在所述基板上，所述拼接面板排列设置在所述网格支撑结构上；其中所述网格支撑结构的表面形成多个横向信号接口及多个纵向信号接口，所述横向信号接口及所述纵向信号接口与相应的拼接面板电性连接；而且所述控制单元的纵向信号通过所述网格支撑结构的纵向信号接口传送至所述拼接面板，所述控制单元的横向信号通过所述网格支撑结构的横向信号接口传送至所述拼接面板。\n\n[0008]根据本发明一实施例，所述网格支撑结构包含多个横向支撑条以及多个纵向支撑条，所述横向支撑条以及所述纵向支撑条彼此交错且形成多个交叉点，每一个交叉点外围设置有相应的横向信号接口以及纵向信号接口。\n\n[0009]根据本发明一实施例，每一纵向支撑条设置有用于传送所述纵向信号的一纵向走线，每一横向支撑条设置有用于传送所述横向信号一横向走线。\n\n[0010]根据本发明一实施例，每一纵向支撑条以及每一横向支撑条为单一层电路板。\n\n[0011]根据本发明一实施例，每一纵向支撑条以及每一横向支撑条为前后交叠的多个电路板。\n\n[0012]根据本发明一实施例，所述拼接面板覆盖在相应的交叉点上，而且热插拔地与所述横向信号接口以及纵向信号接口电性连接。\n\n[0013]根据本发明一实施例，所述控制单元包含一总控制板、多个第二转板以及多个第一转板，所述总控制板电性连接所述第二转板以及所述第一转板，所述第二转板设置在所述纵向支撑条的一端，所述第一转板设置在所述横向支撑条的一端。\n\n[0014]根据本发明一实施例，所述第二转板与所述纵向支撑条之间通过至少一第一覆晶薄膜组件形成电性连接，所述第一转板与所述横向支撑条通过至少一第二覆晶薄膜组件形成电性连接。\n\n[0015]根据本发明一实施例，所述第一覆晶薄膜组件具有一第一面板端子、一第一转板端子以及一第一源极/栅极端，所述第一面板端子配置用以电性连接所述纵向支撑条的纵向走线，所述第一转板端子配置用以电性连接所述第二转板；及所述第二覆晶薄膜组件具有一第二面板端子、一第二转板端子以及一第二源极/栅极端，所述第二面板端子配置用以电性连接所述横向支撑条的横向走线，所述第二转板端子配置用以电性连接所述第一转板。\n\n[0016]根据本发明一实施例，所述拼接面板为有机发光二极管显示面板、微型发光二极管显示面板或次毫米发光二极管显示面板。\n\n[0017]与现有技术相比较，本发明通过在所述网格支撑结构上设置多个拼接面板，能够简化面板拼接的设计，并提高面板拼接的稳定性，而且利用所述控制单元作为总驱动系统，无需另外采用面板拼接的驱动系统，大大减少面板拼接的成本。另外，所述拼接面板配合地组合在所述横向信号接口以及所述纵向信号接口，使得面板拼接的灵活性高，适用性强。在显示过程中，所述拼接面板可支持热插拔，而且所述拼接面板之间的差异小，其中电阻电容(RC)的差异与距离相关，容易补偿，进而能够提高显示的质量。另外，通过将所述拼接面板作为模块化的拼接系统，在使用过程中，能够方便维护并减少维护成本。\n\n附图说明\n\n[0018]图1是根据本发明一实施例的一种拼接显示装置的示意图。\n\n[0019]图2是根据本发明一实施例的一种拼接显示装置的覆晶薄膜组件的配置的示意图。\n\n[0020]图3是根据本发明一实施例的一种拼接显示装置的纵向支撑条的一配置的示意图。\n\n[0021]图4是根据本发明一实施例的一种拼接显示装置的纵向支撑条的另一配置的示意图。\n\n[0022]图5是根据本发明一实施例的一种拼接显示装置的第一覆晶薄膜组件的示意图。\n\n[0023]图6是根据本发明一实施例的一种拼接显示装置的第二覆晶薄膜组件的示意图。\n\n具体实施方式\n\n[0024]以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。再者，本发明所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧面、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。\n\n[0025]请参照图1所示，为本发明一实施例的一种拼接显示装置的示意图，其中所述拼接显示装置包括一基板2、一网格支撑结构3、多个拼接面板4以及一控制单元5。本发明将于下文详细说明各实施例上述各组件的细部构造、组装关系及其运作原理。\n\n[0026]请参照图1及2所示，所述网格支撑结构3设置在所述基板2上，其中所述网格支撑结构3的表面形成多个横向信号接口301及多个纵向信号接口302，所述横向信号接口301及所述纵向信号接口302与相应的拼接面板4电性连接。\n\n[0027]具体而言，所述网格支撑结构3包含多个横向支撑条31以及多个纵向支撑条32，所述横向支撑条31以及所述纵向支撑条32彼此交错且形成多个交叉点X，每一个交叉点X外围设置有相应的横向信号接口301以及纵向信号接口302。在本实施例中，二横向信号接口301分别设置在每一个交叉点X的横向二侧，二纵向信号接口302分别设置在每一个交叉点X的纵向二侧。另外，每一横向支撑条31以及每一纵向支撑条32为前后交叠的多个电路板，如图3所示，显示多个纵向支撑条32前后交叠；或者，如图4所示，每一横向支撑条31以及每一纵向支撑条32为单一层电路板。\n\n[0028]请参照图1及2所示，所述拼接面板4排列设置在所述网格支撑结构3上，在本实施例中，所述拼接面板4为子面板，由PCB(Printed circuit board)基板或玻璃基板或二者混合而制成，对于不同尺寸的拼接需求，可以加减位于横向或纵向的数量，而且所述拼接面板4也可以组成任何形状。另外，所述拼接面板4为有机发光二极管显示面板、微型发光二极管显示面板或次毫米发光二极管显示面板。\n\n[0029]续参照图1及2所示，所述控制单元5的横向信号通过所述网格支撑结构3的横向信号接口301传送至所述拼接面板4，而且所述控制单元5的纵向信号通过所述网格支撑结构3的纵向信号接口302传送至所述拼接面板4。具体而言，每一横向支撑条31设置有用于传送所述横向信号的一横向走线311，每一纵向支撑条32设置有用于传送所述纵向信号的一纵向走线321。在本实施例中，每一拼接面板4覆盖在相应的交叉点X上，而且热插拔地与所述横向信号接口301以及纵向信号接口302电性连接。\n\n[0030]请参照图1、5及6所示，具体而言，所述控制单元5包含多个第一转板51、多个第二转板52以及一总控制板53，其中所述总控制板53电性连接所述第一转板51以及所述第二转板52，所述第一转板51设置在所述横向支撑条31的一端，所述第二转板52设置在所述纵向支撑条32的一端。在本实施例中，所述第一转板51与所述横向支撑条31通过至少一第一覆晶薄膜组件53形成电性连接，所述第二转板52与所述纵向支撑条32之间通过至少一第二覆晶薄膜组件54形成电性连接。\n\n[0031]续参照图1、5及6所示，进一步来说，所述第一覆晶薄膜组件53具有一第一面板端子531、一第一转板端子532以及一第一源极/栅极端533，所述第一面板端子531配置用以电性连接所述横向支撑条31的横向走线311，所述第一转板端子531配置用以电性连接所述第一转板51。另外，所述第二覆晶薄膜组件54具有一第二面板端子541、一第二转板端子542以及一第二源极/栅极端543，所述第二面板端子541配置用以电性连接所述纵向支撑条32的纵向走线321，所述第二转板端子542配置用以电性连接所述第二转板52。也就是说，所述第一覆晶薄膜组件53以及所述第二覆晶薄膜组件54的源极端或栅极端都可以使用现有的薄膜覆晶封装(Chip On Film,COF)进行驱动，通过上述方式在IC驱动能力之内可实现任意数量的级联。\n\n[0032]如上所述，本发明通过在所述网格支撑结构3上设置多个拼接面板4的设计，能够简化面板拼接的设计，并提高面板拼接的稳定性，而且利用所述控制单元5作为总驱动系统，无需另外采用面板拼接的驱动系统，大大减少面板拼接的成本。另外，所述拼接面板4配合地组合在所述横向信号接口301以及所述纵向信号接口302，使得面板拼接的灵活性高，适用性强。在显示过程中，所述拼接面板4可支持热插拔，而且所述拼接面板4之间的差异小，其中电阻电容(RC)的差异与距离相关，容易补偿，进而能够提高显示的质量。另外，通过将所述拼接面板4作为模块化的拼接系统，在使用过程中，能够方便维护并减少维护成本。\n\n[0033]本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。');
INSERT INTO `os_patent_instruction_text` VALUES (10950, 24004, '技术领域\n\n[0001]本发明涉及显示技术领域，特别涉及一种像素驱动电路和具有该像素驱动电路的背光显示器。\n\n背景技术\n\n[0002]随着高阶TV市场对画质的要求越来越高，提升显示画质成为高阶TV的一个新需求。目前8KOLED受限于补偿电路、IGZO背板技术及驱动设计等问题，尚需开发。而Mini LED/Micro-LED作为一个全新的显示技术，在亮度、功耗上较OLED和dull cell有优势，目前成为显示领域的一个热门方向。而Mini-LED背光显示器相对工艺简单，技术成熟度高，显示效果较传统TV更优，目前得到了大力发展。\n\n[0003]Mini LED背光相比传统背光的区别在于：Mini LED可以通过区域调光(localdimming)实现百万级的对比度。传统背光显示器开启时所有的背光灯都会开启，在面板上不显示的区域也会受到背光照射，导致暗态不够黑，对比度低；而Mini LED可以与面板的显示画面匹配实现区域开启背光，面板上不显示的区域背光不开启，实现完全的黑态，从而达到百万级的对比度。但由于液晶面板内液晶分子的响应时间慢(毫秒级，ms)，而背光LED的响应时间快(纳秒级，ns)，因此在液晶面板和背光LED同步开启扫描时，液晶面板的显示区域会有严重的拖尾问题，影响显示品味。\n\n发明内容\n\n[0004]本发明目的在于，解决现有背光显示器开启时存在拖尾的问题。\n\n[0005]为实现上述目的，本发明提供一种像素驱动电路，包括：第一薄膜晶体管，所述第一薄膜晶体管的栅极连接扫描信号线，其漏极连接数据信号线；第二薄膜晶体管，所述第二薄膜晶体管的栅极连接所述第一薄膜晶体管的源极，其漏极通过所述背光LED灯组连接高电位电压，其源极连接低电位电压；存储电容，所述存储电容的一端连接所述第一薄膜晶体管的源极，其另一端连接低电位电压；还包括：至少一个延迟电容，用以延缓背光LED灯组的开启时间，所述延迟电容的一端连接所述第一薄膜晶体管的源极，其另一端连接所述第二薄膜晶体管的栅极，所述延迟电容与所述存储电容并联连接。\n\n[0006]可选的，所述延迟电容的数量为两个或两个以上，两个或两个以上所述延迟电容串联连接。\n\n[0007]为实现上述目的，本发明还提供一种背光显示器，所述背光显示器包括背光LED灯组、液晶面板以及如权利要求1或2所述的像素驱动电路。\n\n[0008]可选的，所述背光显示器为Mini-LED背光显示器。\n\n[0009]可选的，所述背光LED灯组的开启时长与所述液晶面板内液晶分子的偏转时长一致。\n\n[0010]可选的，所述液晶分子的偏转时长为3～4ms。\n\n[0011]可选的，所述背光LED灯组包括两个或两个以上串联连接的LED灯。\n\n[0012]可选的，所述背光LED灯组的扫描方向与所述液晶面板的扫描方向一致。\n\n[0013]可选的，所述背光LED灯组的扫描方向与所述液晶面板的扫描方向相异。\n\n[0014]本发明的有益效果在于，本发明提供一种像素驱动电路和具有该像素驱动电路的背光显示器，在像素驱动电路的第一薄膜晶体管和第二薄膜晶体管之间增加一个延迟电容，结合存储电容，形成2T2C形式的像素驱动电路，延迟电容的增加，可以延缓背光LED灯组的开启时间，从而使得背光LED灯组的开启时长与液晶面板内液晶分子的偏转时长相一致，即液晶分子完全偏转后背光LED灯组才亮，从而改善背光显示器的拖尾问题，提高显示品味。\n\n附图说明\n\n[0015]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0016]图1是本发明一示例性实施例中的像素驱动电路的结构示意图。\n\n[0017]图2为液晶分子偏转示意图。\n\n[0018]图2中所述箭头方向为液晶分子偏转方向。\n\n[0019]图中部件编号如下：\n\n[0020]100、像素驱动电路，110、扫描信号线，120、数据信号线，130、背光LED灯组，131、LED灯；\n\n[0021]T1、第一薄膜晶体管，T2、第二薄膜晶体管，CS、存储电容，C1、延迟电容，VDD、高电位电压，VSS、低电位电压；\n\n[0022]200、液晶分子。\n\n具体实施方式\n\n[0023]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0024]所述像素驱动电路通过在第一薄膜晶体管T1和第二薄膜晶体管T2之间增设一个延迟电容C1，延缓背光LED灯组的开启时间，继而使得背光LED灯组的开启时长与液晶面板内液晶分子的偏转时长相一致，从而改善背光显示器的拖尾问题，提高显示品味。作为典型应用，所述像素驱动电路可被应用于背光显示器中，具体地，可被应用于Mini-LED背光显示器，所述背光显示器包括液晶面板、背光LED灯组以及所述像素驱动电路。\n\n[0025]参照图1，在本发明的一个实施例中，像素驱动电路100包括第一薄膜晶体管T1、第二薄膜晶体管T2、存储电容CS和延迟电容C1。其中，第一薄膜晶体管T1的栅极连接扫描信号线110，其漏极连接数据信号线120，存储电容CS的一端和延迟电容C1的一端分别连接第一薄膜晶体管T1的源极，存储电容CS的另一端连接低电位电压VSS，延迟电容C1的另一端连接第二薄膜晶体管T2的栅极，所述延迟电容C1与所述存储电容CS并联连接，第二薄膜晶体管T2的漏极通过背光LED灯组130连接高电位电压VDD，第二薄膜晶体管T2的源极连接VSS。\n\n[0026]延迟电容C1与存储电容CS之间并联连接，可增加第一薄膜晶体管T1与第二薄膜晶体管T2之间的总电容，即，当扫描信号线110被选中时，第一薄膜晶体管T1开启，数据信号线120内的数据电压通过第一薄膜晶体管T1除了需要对存储电容CS进行充电，此时，由于延迟电容C1的增加导致总电容增加，数据信号线120内的数据电压还需要通过第一薄膜晶体管T1对延迟电容C1进行充电，等到存储电容CS和延迟电容C1均充电完毕后，扫描完成，进行下一像素驱动电路的扫描，与该像素驱动电路100连接的扫描信号线110扫描信号线未被选中，第一薄膜晶体管T1截止，存储在存储电容CS和延迟电容C1内的电荷导通第二薄膜晶体管T2，进而导通背光LED灯组130，背光LED灯组130点亮，从而延缓了背光LED灯组130的开启时间。\n\n[0027]其中，所述背光LED灯组130包括两个或两个以上串联连接的LED灯131。\n\n[0028]在本发明的一个实施例中，延迟电容C1的数量为两个或两个以上，两个或两个以上所述延迟电容串联连接，延迟电容组与所述存储电容CS并联连接。在本实施例中，可对延迟电容C1的电容值进行调整(例如增加或减少延迟电容C1的数量，或采用不同电容值的延迟电容C1)，直至延迟电容C1与存储电容CS配合，使得背光LED灯组130的开启时长与液晶分子200的偏转完成时长相一致，从而实现背光LED灯组130与液晶面板的同步开启，解决现有背光显示器的显示画面拖尾的问题。具体到本实施例中，参照图2，液晶分子200的偏转时长为4ms，背光LED灯组130的开启时长同样为4ms。\n\n[0029]在本实施例中，所述背光LED灯组130的扫描方向与液晶面板的扫描方向一致。在另一实施例中，所述背光LED灯组130的扫描方向与液晶面板的扫描方向相异。其中，扫描方向与扫描信号线方向垂直设置。\n\n[0030]以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，特别涉及一种像素驱动电路和具有该像素驱动电路的背光显示器。\n\n背景技术\n\n[0002]随着高阶TV市场对画质的要求越来越高，提升显示画质成为高阶TV的一个新需求。目前8KOLED受限于补偿电路、IGZO背板技术及驱动设计等问题，尚需开发。而Mini LED/Micro-LED作为一个全新的显示技术，在亮度、功耗上较OLED和dull cell有优势，目前成为显示领域的一个热门方向。而Mini-LED背光显示器相对工艺简单，技术成熟度高，显示效果较传统TV更优，目前得到了大力发展。\n\n[0003]Mini LED背光相比传统背光的区别在于：Mini LED可以通过区域调光(localdimming)实现百万级的对比度。传统背光显示器开启时所有的背光灯都会开启，在面板上不显示的区域也会受到背光照射，导致暗态不够黑，对比度低；而Mini LED可以与面板的显示画面匹配实现区域开启背光，面板上不显示的区域背光不开启，实现完全的黑态，从而达到百万级的对比度。但由于液晶面板内液晶分子的响应时间慢(毫秒级，ms)，而背光LED的响应时间快(纳秒级，ns)，因此在液晶面板和背光LED同步开启扫描时，液晶面板的显示区域会有严重的拖尾问题，影响显示品味。\n\n发明内容\n\n[0004]本发明目的在于，解决现有背光显示器开启时存在拖尾的问题。\n\n[0005]为实现上述目的，本发明提供一种像素驱动电路，包括：第一薄膜晶体管，所述第一薄膜晶体管的栅极连接扫描信号线，其漏极连接数据信号线；第二薄膜晶体管，所述第二薄膜晶体管的栅极连接所述第一薄膜晶体管的源极，其漏极通过所述背光LED灯组连接高电位电压，其源极连接低电位电压；存储电容，所述存储电容的一端连接所述第一薄膜晶体管的源极，其另一端连接低电位电压；还包括：至少一个延迟电容，用以延缓背光LED灯组的开启时间，所述延迟电容的一端连接所述第一薄膜晶体管的源极，其另一端连接所述第二薄膜晶体管的栅极，所述延迟电容与所述存储电容并联连接。\n\n[0006]可选的，所述延迟电容的数量为两个或两个以上，两个或两个以上所述延迟电容串联连接。\n\n[0007]为实现上述目的，本发明还提供一种背光显示器，所述背光显示器包括背光LED灯组、液晶面板以及如权利要求1或2所述的像素驱动电路。\n\n[0008]可选的，所述背光显示器为Mini-LED背光显示器。\n\n[0009]可选的，所述背光LED灯组的开启时长与所述液晶面板内液晶分子的偏转时长一致。\n\n[0010]可选的，所述液晶分子的偏转时长为3～4ms。\n\n[0011]可选的，所述背光LED灯组包括两个或两个以上串联连接的LED灯。\n\n[0012]可选的，所述背光LED灯组的扫描方向与所述液晶面板的扫描方向一致。\n\n[0013]可选的，所述背光LED灯组的扫描方向与所述液晶面板的扫描方向相异。\n\n[0014]本发明的有益效果在于，本发明提供一种像素驱动电路和具有该像素驱动电路的背光显示器，在像素驱动电路的第一薄膜晶体管和第二薄膜晶体管之间增加一个延迟电容，结合存储电容，形成2T2C形式的像素驱动电路，延迟电容的增加，可以延缓背光LED灯组的开启时间，从而使得背光LED灯组的开启时长与液晶面板内液晶分子的偏转时长相一致，即液晶分子完全偏转后背光LED灯组才亮，从而改善背光显示器的拖尾问题，提高显示品味。\n\n附图说明\n\n[0015]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0016]图1是本发明一示例性实施例中的像素驱动电路的结构示意图。\n\n[0017]图2为液晶分子偏转示意图。\n\n[0018]图2中所述箭头方向为液晶分子偏转方向。\n\n[0019]图中部件编号如下：\n\n[0020]100、像素驱动电路，110、扫描信号线，120、数据信号线，130、背光LED灯组，131、LED灯；\n\n[0021]T1、第一薄膜晶体管，T2、第二薄膜晶体管，CS、存储电容，C1、延迟电容，VDD、高电位电压，VSS、低电位电压；\n\n[0022]200、液晶分子。\n\n具体实施方式\n\n[0023]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0024]所述像素驱动电路通过在第一薄膜晶体管T1和第二薄膜晶体管T2之间增设一个延迟电容C1，延缓背光LED灯组的开启时间，继而使得背光LED灯组的开启时长与液晶面板内液晶分子的偏转时长相一致，从而改善背光显示器的拖尾问题，提高显示品味。作为典型应用，所述像素驱动电路可被应用于背光显示器中，具体地，可被应用于Mini-LED背光显示器，所述背光显示器包括液晶面板、背光LED灯组以及所述像素驱动电路。\n\n[0025]参照图1，在本发明的一个实施例中，像素驱动电路100包括第一薄膜晶体管T1、第二薄膜晶体管T2、存储电容CS和延迟电容C1。其中，第一薄膜晶体管T1的栅极连接扫描信号线110，其漏极连接数据信号线120，存储电容CS的一端和延迟电容C1的一端分别连接第一薄膜晶体管T1的源极，存储电容CS的另一端连接低电位电压VSS，延迟电容C1的另一端连接第二薄膜晶体管T2的栅极，所述延迟电容C1与所述存储电容CS并联连接，第二薄膜晶体管T2的漏极通过背光LED灯组130连接高电位电压VDD，第二薄膜晶体管T2的源极连接VSS。\n\n[0026]延迟电容C1与存储电容CS之间并联连接，可增加第一薄膜晶体管T1与第二薄膜晶体管T2之间的总电容，即，当扫描信号线110被选中时，第一薄膜晶体管T1开启，数据信号线120内的数据电压通过第一薄膜晶体管T1除了需要对存储电容CS进行充电，此时，由于延迟电容C1的增加导致总电容增加，数据信号线120内的数据电压还需要通过第一薄膜晶体管T1对延迟电容C1进行充电，等到存储电容CS和延迟电容C1均充电完毕后，扫描完成，进行下一像素驱动电路的扫描，与该像素驱动电路100连接的扫描信号线110扫描信号线未被选中，第一薄膜晶体管T1截止，存储在存储电容CS和延迟电容C1内的电荷导通第二薄膜晶体管T2，进而导通背光LED灯组130，背光LED灯组130点亮，从而延缓了背光LED灯组130的开启时间。\n\n[0027]其中，所述背光LED灯组130包括两个或两个以上串联连接的LED灯131。\n\n[0028]在本发明的一个实施例中，延迟电容C1的数量为两个或两个以上，两个或两个以上所述延迟电容串联连接，延迟电容组与所述存储电容CS并联连接。在本实施例中，可对延迟电容C1的电容值进行调整(例如增加或减少延迟电容C1的数量，或采用不同电容值的延迟电容C1)，直至延迟电容C1与存储电容CS配合，使得背光LED灯组130的开启时长与液晶分子200的偏转完成时长相一致，从而实现背光LED灯组130与液晶面板的同步开启，解决现有背光显示器的显示画面拖尾的问题。具体到本实施例中，参照图2，液晶分子200的偏转时长为4ms，背光LED灯组130的开启时长同样为4ms。\n\n[0029]在本实施例中，所述背光LED灯组130的扫描方向与液晶面板的扫描方向一致。在另一实施例中，所述背光LED灯组130的扫描方向与液晶面板的扫描方向相异。其中，扫描方向与扫描信号线方向垂直设置。\n\n[0030]以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10951, 24005, '技术领域\n\n[0001]本申请涉及平板显示器制造技术领域，具体涉及一种使用高效率银浆转印方法及使用该方法的微型发光二极管移印技术。\n\n背景技术\n\n[0002]Micro-LED(或Mini-LED)，微型发光二极管，是将传统的LED结构薄膜化、微小化及矩阵化之后，采用PCB、柔性FPC、BT及CMOS/TFT集成电路工艺等制成驱动电路，实现LED光源中每个像素点定址控制和单独驱动的显示技术。由于微型LED技术的亮度、对比度、反应时间、可视角度、分辨率等各种指标都强于LCD和OLED技术，加上自发光、结构简单、体积小及节能的优点，已经受到了广泛的关注。\n\n[0003]微型LED芯片在制作完成之后，需要转移到驱动电路板上形成LED阵列，称之为巨量转移(Mass Transfer)，或简称转移。\n\n[0004]移印工艺是一种应用广泛的特殊印刷工艺，首先在钢板上开模具，制作所需要的图形和文字，然后通过硅胶头将模槽内的油墨转移至素材表面，可以在小面积、凹凸面、不规则表面的产品上面进行字体或图案移印，现在正成为一种重要的特种印刷，在机械电子工业、仪器仪表中应用广泛，甚至微细的集成电路IC中也可以移印，因其明显的优势在Micro-LED显示领域也有着重要的应用。\n\n[0005]在现有的技术实践过程中，目前Micro-LED转移通过在基板侧面涂布银浆，银浆通过激光固化，固化后再进行激光雕刻，最终形成需要的线路，目前雕刻的方式复杂，工艺制造过程中节拍时间长，雕刻时先进行正面雕刻，再进行侧面雕刻，需要进行两次镭射，参见说明书附图2。而这，无疑降低了银浆转印的效率，同时也使Micro-LED转移成本增高。\n\n[0006]鉴于此，本申请提供了一种银浆转印方法、微型发光二极管移印方法及微型发光二极管，以及结合该方法制备的微型发光二极管，基于该微型发光二极管移印方法制备的微型发光二极管提升Micro-LED转印过程中银浆的转印效率。\n\n发明内容\n\n[0007]本申请提供了一种金属浆转印方法，包括步骤：\n\n[0008]S1，提供一基于微型发光二极管的基板及一与所述基板对应的膜片；所述膜片包括图案化镂空区；所述图案化镂空区位于所述膜片的边缘部位；所述基板包括至少一表面及至少一与所述表面垂直的侧面；\n\n[0009]S2，将所述膜片贴合在所述基板的表面上；\n\n[0010]S3，在所述膜片上形成金属膜层；\n\n[0011]S4，通过移印雕刻技术在所述基板的侧面上形成第一金属线路；及\n\n[0012]S5，去除所述膜片；膜片去除后，对应所述图案化镂空区处的金属保留，在所述基板边缘形成第二金属线路，所述第一金属线路与所述第二金属线路电连接。\n\n[0013]最终形成所需金属线路的基板，从而实现Micro-LED的转移。\n\n[0014]可选地，所述金属浆为银浆。\n\n[0015]其中，该膜片设计的边缘狭缝结构(Slitstructure)，狭缝设计为镂空区，如图4所示。具体地，该膜片的狭缝结构可以通过可模具裁切，也可激光镭射等膜片裁切方式形成。\n\n[0016]相应的，当膜片在基板上贴合后进行金属成膜，金属浆则进入镂空区，金属浆固化后将膜片撕除，狭缝区域金属线路则保留在基板上形成正面导线，从而无需对基板正面进行激光雕刻来形成金属线路。\n\n[0017]可选地，膜片可为PI膜(PolyimideFilm，聚酰亚胺薄膜)，PET(polyethyleneglycol terephthalate，聚对苯二甲酸乙二醇酯)膜，具体材料不限。\n\n[0018]在基板正面形成金属线路的同时对与该金属线路电路连接的侧面进行线路雕刻。首先，在该基板的侧面上涂布金属浆，激光固化所述涂布金属浆，金属浆固化后则进行激光镭射雕刻，形成电路连接第二金属线路的第一金属线路。优选地，该金属浆为银浆。\n\n[0019]步骤S2中，所述将该膜片贴合在所述基板的表面上可以通过软贴硬设备实现，具体地，这里的Micro-LED基板即是硬板，膜片即是软膜，膜片与基板在真空箱中通过滚轮将膜片与基板贴合。金属成膜通过物理气相沉积(PVD)技术形成。\n\n[0020]优选地，在膜片贴合在基板并金属成膜后，还通过等离子清晰机(Plasma，或等离子表面处理仪)对膜层进行清洁，清洁基板上的异物，同时增加基板表面的附着力，以便后续的线路雕刻。\n\n[0021]对应地，本申请还提供了一种微型发光二极管移印方法，采用上述银浆转印方法制备出具有第一金属线路及第二金属线路的基板，并基于该基板进行微型发光二极管的巨量转移制程，进而实现了微型发光二极管的移印。\n\n[0022]进一步地，本申请还提供了一种微型发光二极管，包括：微型发光二极管基板，所述微型发光二极管基板包括至少一表面及至少一与该表面垂直连接的侧面，通过使用上述微型发光二极管移印方法制备该微型发光二极管，该微型发光二极管基板还包括形成在所述表面上的第二金属线路及一与第二金属线路电连接且形成在所述侧面上的第一金属线路。\n\n[0023]本申请实施例通过采用这种微型发光二极管移印方法，在基板正面进行贴膜片，再进行金属成膜，膜片撕除后在基板边缘形成金属线路，从而在基板侧面涂布银浆而需要两次镭射雕刻来形成所需金属线路的基础上，调整了正面镭射雕刻的方式，进而提升了银浆转印的效率，降低了银浆转印的工艺复杂度，同时也降低了Micro-LED转移的工艺成本。\n\n附图说明\n\n[0024]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0025]图1是本申请的Micro-LED转移过程中的移印雕刻技术流程图；\n\n[0026]图2是本申请提供的贴膜示意图；\n\n[0027]图3是本申请提供的金属成膜示意图；\n\n[0028]图4是本申请提供的移印雕刻形成第二金属线路的示意图；及\n\n[0029]图5是本申请提供的移印雕刻成型的微型发光二极管基板示意图。\n\n具体实施方式\n\n[0030]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0031]本申请实施例提供了一种微型发光二极管移印方法。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0032]在Micro-LED从源基板或贡献基板转移至目标基板的过程中，通常在基板侧面需要涂布银浆等导电金属浆，然后对涂布金属浆进行激光固化，固化之后再使用激光进行雕刻形成导线及接触面，以便实现基本正面的LED布局及转移的基板间的无缝衔接。\n\n[0033]本申请针对现有的雕刻方式需依次对正面和侧面进行镭射雕刻，也即雕刻方式---二次雕刻---复杂的等技术问题，通过采用贴膜的方式在基板正面形成导电线路，而在基板侧面涂布银浆而需要两次镭射雕刻来形成所需金属线路。本申请调整了正面镭射雕刻的方式，进而提升了银浆转印的效率，降低了银浆转印的工艺复杂度，同时也降低了Micro-LED转移的工艺成本。\n\n[0034]请参阅附图1，本发明公开的一种金属浆转移方法，包括步骤：\n\n[0035]S1，提供一基于微型发光二极管的基板及一与所述基板对应的膜片；所述膜片包括图案化镂空区；所述图案化镂空区位于所述膜片的边缘部位；所述基板包括至少一表面及至少一与所述表面垂直的侧面；\n\n[0036]S2，将所述膜片贴合在所述基板的表面上；\n\n[0037]S3，在所述膜片上形成金属膜层；\n\n[0038]S4，通过移印雕刻技术在所述基板的侧面上形成第一金属线路；\n\n[0039]S5，去除所述膜片；膜片去除后，对应所述图案化镂空区处的金属保留，在所述基板边缘形成第二金属线路，所述第一金属线路与所述第二金属线路电连接。\n\n[0040]步骤S1中，可选地，所述基板1为发光二极管基板、微型发光二极管基板、液晶显示基板等基板。\n\n[0041]膜片2可为PI膜(PolyimideFilm，聚酰亚胺薄膜)，PET(polyethylene glycolterephthalate，聚对苯二甲酸乙二醇酯)膜，具体材料不限。该膜片设计为边缘狭缝结构(Slitstructure)，狭缝设计为镂空区21，如附图2所示。\n\n[0042]具体地，该膜片的狭缝结构可以通过可模具裁切，也可激光镭射等膜片裁切方式形成，如附图2所示，当膜片为PI膜片时，PI膜片通过模切方式形成具有狭缝结构的膜片；或者该膜片通过激光镭射方式形成具有slit结构的膜片。\n\n[0043]膜片裁切好后，将该具有slit结构的膜片贴合在基板正面，该膜片的长宽尺寸与基板对应。具体地，该贴合方式为软贴硬的方式，可用软贴硬设备实现，这里的Micro-LED基板即是硬板，膜片即是软膜，膜片与基板在真空箱中通过滚轮将膜片与基板贴合。金属成膜通过物理气相沉积(PVD)技术形成如附图3所示。该软贴硬制程的贴合工序的设备及工艺操作均大为简化，且成本低，效率高，适合大批量生产，同时也提高了产品良率。\n\n[0044]当膜片在基板上贴合后，通过金属膜层3进行金属成膜，具体地，金属成膜可通过物理气相沉积(Physical Vapour Deposition,PVD)技术成膜。金属浆则进入镂空区，金属浆固化后将膜片去除，狭缝区域金属线路则保留在基板上形成正面金属线路，从而无需对基板正面进行激光雕刻来形成第二金属线路。\n\n[0045]综上可知，通过步骤S2-S5的贴膜的方式形成基板正面的第二金属线路，与通过激光镭射雕刻的手段相比，大大降低了工艺复杂度和制作成本，且效率高。\n\n[0046]进一步地，在上述步骤完成了基板正面线路的制成的同时，步骤S4则通过激光镭射雕刻制板从而形成相应的金属线，从而形成完整的雕刻线路，实现基板上的金属浆转印。\n\n[0047]具体地，步骤S4的激光镭射雕刻步骤包括：\n\n[0048]在该基板的侧面上涂布金属浆；\n\n[0049]激光固化金属浆；\n\n[0050]对固化后的银浆进行激光镭射，雕刻形成该第一金属线路。\n\n[0051]可选地，该金属浆为银浆；还可以通过使用紫外光进行银浆固化，固化后减少Ag线路电阻。\n\n[0052]对应地，本申请还提供了一种微型发光二极管移印方法，采用上述银浆转印方法制备出具有第一金属线路及第二金属线路的基板，并基于该基板进行微型发光二极管的巨量转移制程，进而实现了微型发光二极管的移印。\n\n[0053]此外，本申请实施例还提供了一种微型发光二极管，参见附图5，包括：微型发光二极管基板1；所述微型发光二极管基板包括至少一表面及至少一与该表面垂直连接的侧面；形成在所述表面上的第二金属线路4；及与第二金属线路电连接且形成在所述侧面上的第一金属线路5；其中，通过上述贴膜方法制备第二金属线路，通过上述激光镭射雕刻的移印雕刻技术实现第一金属线路的制备。\n\n[0054]以上对本申请实施例所提供的一种微型发光二极管移印方法及相应的微型发光二极管基板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及平板显示器制造技术领域，具体涉及一种使用高效率银浆转印方法及使用该方法的微型发光二极管移印技术。\n\n背景技术\n\n[0002]Micro-LED(或Mini-LED)，微型发光二极管，是将传统的LED结构薄膜化、微小化及矩阵化之后，采用PCB、柔性FPC、BT及CMOS/TFT集成电路工艺等制成驱动电路，实现LED光源中每个像素点定址控制和单独驱动的显示技术。由于微型LED技术的亮度、对比度、反应时间、可视角度、分辨率等各种指标都强于LCD和OLED技术，加上自发光、结构简单、体积小及节能的优点，已经受到了广泛的关注。\n\n[0003]微型LED芯片在制作完成之后，需要转移到驱动电路板上形成LED阵列，称之为巨量转移(Mass Transfer)，或简称转移。\n\n[0004]移印工艺是一种应用广泛的特殊印刷工艺，首先在钢板上开模具，制作所需要的图形和文字，然后通过硅胶头将模槽内的油墨转移至素材表面，可以在小面积、凹凸面、不规则表面的产品上面进行字体或图案移印，现在正成为一种重要的特种印刷，在机械电子工业、仪器仪表中应用广泛，甚至微细的集成电路IC中也可以移印，因其明显的优势在Micro-LED显示领域也有着重要的应用。\n\n[0005]在现有的技术实践过程中，目前Micro-LED转移通过在基板侧面涂布银浆，银浆通过激光固化，固化后再进行激光雕刻，最终形成需要的线路，目前雕刻的方式复杂，工艺制造过程中节拍时间长，雕刻时先进行正面雕刻，再进行侧面雕刻，需要进行两次镭射，参见说明书附图2。而这，无疑降低了银浆转印的效率，同时也使Micro-LED转移成本增高。\n\n[0006]鉴于此，本申请提供了一种银浆转印方法、微型发光二极管移印方法及微型发光二极管，以及结合该方法制备的微型发光二极管，基于该微型发光二极管移印方法制备的微型发光二极管提升Micro-LED转印过程中银浆的转印效率。\n\n发明内容\n\n[0007]本申请提供了一种金属浆转印方法，包括步骤：\n\n[0008]S1，提供一基于微型发光二极管的基板及一与所述基板对应的膜片；所述膜片包括图案化镂空区；所述图案化镂空区位于所述膜片的边缘部位；所述基板包括至少一表面及至少一与所述表面垂直的侧面；\n\n[0009]S2，将所述膜片贴合在所述基板的表面上；\n\n[0010]S3，在所述膜片上形成金属膜层；\n\n[0011]S4，通过移印雕刻技术在所述基板的侧面上形成第一金属线路；及\n\n[0012]S5，去除所述膜片；膜片去除后，对应所述图案化镂空区处的金属保留，在所述基板边缘形成第二金属线路，所述第一金属线路与所述第二金属线路电连接。\n\n[0013]最终形成所需金属线路的基板，从而实现Micro-LED的转移。\n\n[0014]可选地，所述金属浆为银浆。\n\n[0015]其中，该膜片设计的边缘狭缝结构(Slitstructure)，狭缝设计为镂空区，如图4所示。具体地，该膜片的狭缝结构可以通过可模具裁切，也可激光镭射等膜片裁切方式形成。\n\n[0016]相应的，当膜片在基板上贴合后进行金属成膜，金属浆则进入镂空区，金属浆固化后将膜片撕除，狭缝区域金属线路则保留在基板上形成正面导线，从而无需对基板正面进行激光雕刻来形成金属线路。\n\n[0017]可选地，膜片可为PI膜(PolyimideFilm，聚酰亚胺薄膜)，PET(polyethyleneglycol terephthalate，聚对苯二甲酸乙二醇酯)膜，具体材料不限。\n\n[0018]在基板正面形成金属线路的同时对与该金属线路电路连接的侧面进行线路雕刻。首先，在该基板的侧面上涂布金属浆，激光固化所述涂布金属浆，金属浆固化后则进行激光镭射雕刻，形成电路连接第二金属线路的第一金属线路。优选地，该金属浆为银浆。\n\n[0019]步骤S2中，所述将该膜片贴合在所述基板的表面上可以通过软贴硬设备实现，具体地，这里的Micro-LED基板即是硬板，膜片即是软膜，膜片与基板在真空箱中通过滚轮将膜片与基板贴合。金属成膜通过物理气相沉积(PVD)技术形成。\n\n[0020]优选地，在膜片贴合在基板并金属成膜后，还通过等离子清晰机(Plasma，或等离子表面处理仪)对膜层进行清洁，清洁基板上的异物，同时增加基板表面的附着力，以便后续的线路雕刻。\n\n[0021]对应地，本申请还提供了一种微型发光二极管移印方法，采用上述银浆转印方法制备出具有第一金属线路及第二金属线路的基板，并基于该基板进行微型发光二极管的巨量转移制程，进而实现了微型发光二极管的移印。\n\n[0022]进一步地，本申请还提供了一种微型发光二极管，包括：微型发光二极管基板，所述微型发光二极管基板包括至少一表面及至少一与该表面垂直连接的侧面，通过使用上述微型发光二极管移印方法制备该微型发光二极管，该微型发光二极管基板还包括形成在所述表面上的第二金属线路及一与第二金属线路电连接且形成在所述侧面上的第一金属线路。\n\n[0023]本申请实施例通过采用这种微型发光二极管移印方法，在基板正面进行贴膜片，再进行金属成膜，膜片撕除后在基板边缘形成金属线路，从而在基板侧面涂布银浆而需要两次镭射雕刻来形成所需金属线路的基础上，调整了正面镭射雕刻的方式，进而提升了银浆转印的效率，降低了银浆转印的工艺复杂度，同时也降低了Micro-LED转移的工艺成本。\n\n附图说明\n\n[0024]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0025]图1是本申请的Micro-LED转移过程中的移印雕刻技术流程图；\n\n[0026]图2是本申请提供的贴膜示意图；\n\n[0027]图3是本申请提供的金属成膜示意图；\n\n[0028]图4是本申请提供的移印雕刻形成第二金属线路的示意图；及\n\n[0029]图5是本申请提供的移印雕刻成型的微型发光二极管基板示意图。\n\n具体实施方式\n\n[0030]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0031]本申请实施例提供了一种微型发光二极管移印方法。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0032]在Micro-LED从源基板或贡献基板转移至目标基板的过程中，通常在基板侧面需要涂布银浆等导电金属浆，然后对涂布金属浆进行激光固化，固化之后再使用激光进行雕刻形成导线及接触面，以便实现基本正面的LED布局及转移的基板间的无缝衔接。\n\n[0033]本申请针对现有的雕刻方式需依次对正面和侧面进行镭射雕刻，也即雕刻方式---二次雕刻---复杂的等技术问题，通过采用贴膜的方式在基板正面形成导电线路，而在基板侧面涂布银浆而需要两次镭射雕刻来形成所需金属线路。本申请调整了正面镭射雕刻的方式，进而提升了银浆转印的效率，降低了银浆转印的工艺复杂度，同时也降低了Micro-LED转移的工艺成本。\n\n[0034]请参阅附图1，本发明公开的一种金属浆转移方法，包括步骤：\n\n[0035]S1，提供一基于微型发光二极管的基板及一与所述基板对应的膜片；所述膜片包括图案化镂空区；所述图案化镂空区位于所述膜片的边缘部位；所述基板包括至少一表面及至少一与所述表面垂直的侧面；\n\n[0036]S2，将所述膜片贴合在所述基板的表面上；\n\n[0037]S3，在所述膜片上形成金属膜层；\n\n[0038]S4，通过移印雕刻技术在所述基板的侧面上形成第一金属线路；\n\n[0039]S5，去除所述膜片；膜片去除后，对应所述图案化镂空区处的金属保留，在所述基板边缘形成第二金属线路，所述第一金属线路与所述第二金属线路电连接。\n\n[0040]步骤S1中，可选地，所述基板1为发光二极管基板、微型发光二极管基板、液晶显示基板等基板。\n\n[0041]膜片2可为PI膜(PolyimideFilm，聚酰亚胺薄膜)，PET(polyethylene glycolterephthalate，聚对苯二甲酸乙二醇酯)膜，具体材料不限。该膜片设计为边缘狭缝结构(Slitstructure)，狭缝设计为镂空区21，如附图2所示。\n\n[0042]具体地，该膜片的狭缝结构可以通过可模具裁切，也可激光镭射等膜片裁切方式形成，如附图2所示，当膜片为PI膜片时，PI膜片通过模切方式形成具有狭缝结构的膜片；或者该膜片通过激光镭射方式形成具有slit结构的膜片。\n\n[0043]膜片裁切好后，将该具有slit结构的膜片贴合在基板正面，该膜片的长宽尺寸与基板对应。具体地，该贴合方式为软贴硬的方式，可用软贴硬设备实现，这里的Micro-LED基板即是硬板，膜片即是软膜，膜片与基板在真空箱中通过滚轮将膜片与基板贴合。金属成膜通过物理气相沉积(PVD)技术形成如附图3所示。该软贴硬制程的贴合工序的设备及工艺操作均大为简化，且成本低，效率高，适合大批量生产，同时也提高了产品良率。\n\n[0044]当膜片在基板上贴合后，通过金属膜层3进行金属成膜，具体地，金属成膜可通过物理气相沉积(Physical Vapour Deposition,PVD)技术成膜。金属浆则进入镂空区，金属浆固化后将膜片去除，狭缝区域金属线路则保留在基板上形成正面金属线路，从而无需对基板正面进行激光雕刻来形成第二金属线路。\n\n[0045]综上可知，通过步骤S2-S5的贴膜的方式形成基板正面的第二金属线路，与通过激光镭射雕刻的手段相比，大大降低了工艺复杂度和制作成本，且效率高。\n\n[0046]进一步地，在上述步骤完成了基板正面线路的制成的同时，步骤S4则通过激光镭射雕刻制板从而形成相应的金属线，从而形成完整的雕刻线路，实现基板上的金属浆转印。\n\n[0047]具体地，步骤S4的激光镭射雕刻步骤包括：\n\n[0048]在该基板的侧面上涂布金属浆；\n\n[0049]激光固化金属浆；\n\n[0050]对固化后的银浆进行激光镭射，雕刻形成该第一金属线路。\n\n[0051]可选地，该金属浆为银浆；还可以通过使用紫外光进行银浆固化，固化后减少Ag线路电阻。\n\n[0052]对应地，本申请还提供了一种微型发光二极管移印方法，采用上述银浆转印方法制备出具有第一金属线路及第二金属线路的基板，并基于该基板进行微型发光二极管的巨量转移制程，进而实现了微型发光二极管的移印。\n\n[0053]此外，本申请实施例还提供了一种微型发光二极管，参见附图5，包括：微型发光二极管基板1；所述微型发光二极管基板包括至少一表面及至少一与该表面垂直连接的侧面；形成在所述表面上的第二金属线路4；及与第二金属线路电连接且形成在所述侧面上的第一金属线路5；其中，通过上述贴膜方法制备第二金属线路，通过上述激光镭射雕刻的移印雕刻技术实现第一金属线路的制备。\n\n[0054]以上对本申请实施例所提供的一种微型发光二极管移印方法及相应的微型发光二极管基板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10952, 24006, '技术领域\n\n[0001]本发明涉及显示技术领域，特别涉及一种液晶显示面板及具有该液晶显示面板的显示装置。\n\n背景技术\n\n[0002]薄膜晶体管-液晶显示器(TFT-LCD)是当前平板显示器的主要产品之一，已成为大尺寸TV的主流技术，随着信息技术和人们生活水平的提升、人们对面板尺寸、解析度及显示器的画质的要求也越来越高。\n\n[0003]基于a-Si TFT第三的Mini-LED背光模组，每颗LED灯珠具有独立第三电路，调光响应速度更快，控制精度更高，能大幅度提升动态分区背光响应的速度和精确每一个分区亮度，还能削减背光模块的厚度。但由于a-Si TFT长时间工作时器件特性发生的偏移，或者制程本身不均一性造成的各分区器件特性不均，会导致显示器的白点发生偏移或不一致，显示器的白点是影响显示器显示效果一个重要因素，显示器的白点决定了显示器的白画面的标准程度，白画面越标准，显示器的显示效果越好，白点发生偏移或不一致则会影响显示效果。\n\n发明内容\n\n[0004]本发明目的在于，提供一种液晶显示面板及显示装置，以解决现有显示装置背光白点偏移的监测问题。\n\n[0005]具体地，本发明采用的技术方案为：\n\n[0006]一种液晶显示面板，包括：相对设置的彩膜基板和阵列基板，所述彩膜基板和所述阵列基板之间设置有液晶层，所述彩膜基板包括底板，所述底板朝向所述阵列基板一面设置有栅极绝缘层，所述栅极绝缘层背离所述底板一面设置有保护层，所述保护层背离所述栅极绝缘层一面设置有黑矩阵层；还包括：感测元件，设置于所述彩膜基板内，所述感测元件包括串联连接于高电位电压和输出电压之间的第一薄膜晶体管和第二薄膜晶体管，所述第一薄膜晶体管用以接收经由所述阵列基板射入所述彩膜基板的背光；所述第一薄膜晶体管的第一栅极连接第一栅极电压，其第一漏极连接所述高电位电压，其第一源极连接所述第二薄膜晶体管的第二漏极，所述第二薄膜晶体管的第二栅极连接第二栅极电压，其第二源极连接所述输出电压；所述感测元件还包括一电容，所述电容的一端与所述第一薄膜晶体管的第一源极和所述第二薄膜晶体管的第二漏极并联连接，所述电容的另一端连接所述第一栅极电压。\n\n[0007]可选的，所述第一薄膜晶体管的第一有源层、第一漏极和第一源极设置于所述保护层内，所述第一薄膜晶体管的第一栅极设置于所述栅极绝缘层内；所述第一有源层在所述保护层背离所述栅极绝缘层一面的正投影位于所述黑矩阵层在所述保护层背离所述栅极绝缘层一面的正投影的外侧。\n\n[0008]可选的，所述第一薄膜晶体管为a-Si薄膜晶体管。\n\n[0009]可选的，所述第一薄膜晶体管的第一漏极和第一源极分别为钼铜合金。\n\n[0010]可选的，所述第二薄膜晶体管的第二有源层、第二漏极和第二源极设置于所述保护层内，所述第二薄膜晶体管的第二栅极设置于所述栅极绝缘层内，所述第二薄膜晶体管的第二有源层与所述黑矩阵层相对应。\n\n[0011]可选的，所述第二薄膜晶体管为开关薄膜晶体管。\n\n[0012]可选的，所述阵列基板朝向所述彩膜基板一面设置有色阻层。\n\n[0013]为实现上述目的，本发明还提供一种显示装置，包括背光模组和如前所述的液晶显示面板，所述背光模组包括多个LED灯珠，所述显示装置还包括与所述感测元件连接的读取模块。\n\n[0014]可选的，所述LED灯珠为Mini LED。\n\n[0015]本发明的有益效果在于，本发明所提供的液晶显示面板及显示装置，通过在液晶显示面板的彩膜基板上集成一个感测元件，背光模组发出的背光经由阵列基板射入彩膜基板后，所述感测元件可对入射的背光中的三原色(R/G/B)的组成比例进行感测，判断背光中的白点是否发生偏移，继而方便后续校正，避免了显示器对颜色显示的偏差，提升了用户的体验，提升画面显示品质。\n\n附图说明\n\n[0016]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0017]图1是本发明一示例性实施例所提供的液晶显示面板及背光模组的结构示意图；\n\n[0018]图2是本发明一示例性实施例所提供的液晶显示面板中感测元件的等效电路图；\n\n[0019]图3是本发明一示例性实施例所提供的显示装置的结构示意图；\n\n[0020]图1中的箭头方向为背光模组出光方向。\n\n[0021]图中部件编号如下：\n\n[0022]100、液晶显示面板，110、彩膜基板，111、底板，112、栅极绝缘层，113、保护层，114、黑色矩阵层，120、阵列基板，121、衬底基板，122、阵列栅极绝缘层，123、阵列保护层，124、色阻层，125、第三薄膜晶体管，1251、第三栅极，1252、第三有源层，1253、第三漏极，1254、第三源极，126、像素电极，130、隔垫物；\n\n[0023]200、感测元件，210、第一薄膜晶体管，211、第一栅极，212、第一漏极，213、第一源极，214、第一有源层，220、第二薄膜晶体管，221、第二栅极，222、第二漏极，223、第二源极，224、第二有源层；\n\n[0024]300、显示装置，310、背光模组，311、LED灯珠，320、读取模块。\n\n具体实施方式\n\n[0025]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0026]所述液晶显示面板的彩膜基板上集成一个感测元件，背光模组发出的背光经由阵列基板射入彩膜基板后，所述感测元件可对入射的背光中的三原色(R/G/B)的组成比例进行感测，判断背光中的白点是否发生偏移，继而方便后续校正，提升画面显示品质。作为典型应用，本发明所述液晶显示面板可被应用于显示装置上，例如薄膜晶体管-液晶显示器(TFT-LCD)。\n\n[0027]参照图1和2，在本发明的一个实施例中，液晶显示面板100包括相对设置的彩膜基板110和阵列基板120，彩膜基板110与阵列基板120之间设置有液晶层(图中未示出)和隔垫物130，彩膜基板110包括底板111、栅极绝缘层112、保护层113和黑矩阵层114，所述栅极绝缘层112设置于所述底板111朝向阵列基板120一面，保护层113设置于栅极绝缘层112背离底板111一面，黑矩阵层114设置于保护层113背离栅极绝缘层112一面。\n\n[0028]阵列基板120包括衬底基板121、阵列栅极绝缘层122、阵列保护层123、色阻层124、第三薄膜晶体管125和像素电极126，阵列栅极绝缘层122设置于衬底基板121朝向彩膜基板110一面，阵列保护层123设置于阵列栅极绝缘层122背离衬底基板121一面，色阻层124设置于阵列保护层123背离阵列栅极绝缘层122一面，所述第三薄膜晶体管125的第三栅极1251设置于所述阵列栅极绝缘层122内，第三有源层1252、第三漏极1253和第三源极1254设置于阵列保护层123内，所述像素电极126设置于色阻层124背离阵列保护层123一面，像素电极126通过过孔沉积并与第三漏极1253或第三源极1254连接。\n\n[0029]在本实施例中，参见图1，彩膜基板110内设置有一感测元件200，所述感测元件200包括第一薄膜晶体管210和第二薄膜晶体管220，所述第一薄膜晶体管210用于接收经由阵列基板120射入彩膜基板110的背光。参见图2，所述感测元件200还包括一电容230，所述第一薄膜晶体管210的第一栅极211连接第一栅极电压Vgg，其第一漏极212连接所述高电位电压VDD，其第一源极213连接所述第二薄膜晶体管220的第二漏极222，所述第二薄膜晶体管220的第二栅极221连接第二栅极电压Vg，其第二源极223连接所述输出电压Vout；所述电容230的一端与所述第一薄膜晶体管210的第一源极213和所述第二薄膜晶体管220的第二漏极222并联连接，所述电容230的另一端连接所述第一栅极电压Vgg。由此形成所述感测元件200的2T1C的感测架构。\n\n[0030]本实施例中，第一薄膜晶体管210作为感测薄膜晶体管(Sensor TFT)接收经由阵列基板120射入彩膜基板110内的背光，并可感测背光中三元色(红/绿/蓝，R/G/B)的组成比例(配比)，从而判定背光白点是否偏移，如果三原色的配比偏离白点的三原色配比，则可判定出现偏移。\n\n[0031]在本发明的一个实施例中，参见图1，所述第一薄膜晶体管210的第一有源层214、第一漏极212和第一源极213设置于所述保护层113内，所述第一薄膜晶体管210的第一栅极211设置于所述栅极绝缘层112内，在本实施例中，所述第一有源层214在所述保护层113背离所述栅极绝缘层112一面的正投影位于所述黑矩阵层114在所述保护层背离所述栅极绝缘层112一面的正投影的外侧，即，在本实施例中，黑矩阵层114设置于保护层113背离栅极绝缘层112一面的一端，保护层113背离栅极绝缘层112一面的另一端不设置黑矩阵层114。如此，背光可不被黑矩阵层114遮挡而直接射入第一薄膜晶体管210的第一有源层214，使得第一薄膜晶体管210可直接感测背光内的三原色的配比。\n\n[0032]在本发明的另一个实施例中，所述第一薄膜晶体管210为a-Si薄膜晶体管(a-SiTFT)。所述第一薄膜晶体管210的第一漏极212和第一源极213分别为钼铜合金(CuMo)。a-SiTFT具有感光特性，便于第一薄膜晶体管210对背光内三原色的感测。\n\n[0033]所述第二薄膜晶体管220的第二有源层224、第二漏极222和第二源极223设置于所述保护层113内，所述第二薄膜晶体管220的第二栅极221设置于所述栅极绝缘层112内，所述第二薄膜晶体管220的第二有源层224与所述黑矩阵层114相对应。所述第二薄膜晶体管220为开关薄膜晶体管(Switch TFT)。第二薄膜晶体管220作为开关薄膜晶体管，无需接收背光，因此可设置于与黑矩阵层114相对应的阵列基板内侧，保证感测元件200内薄膜晶体管的合理布制。\n\n[0034]为实现上述目的，参照图3，本发明还提供一种显示装置300，包括背光模组310和如前所述的液晶显示面板100，所述背光模组310包括多个LED灯珠311，所述显示装置还包括与所述感测元件200连接的读取模块320，感测元件200感测背光中三原色的配比以判定背光中白点是否发生偏移，并将感测结果传输至读取模块320，读取模块320读取判定结果。所述LED灯珠311为Mini LED。\n\n[0035]以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，特别涉及一种液晶显示面板及具有该液晶显示面板的显示装置。\n\n背景技术\n\n[0002]薄膜晶体管-液晶显示器(TFT-LCD)是当前平板显示器的主要产品之一，已成为大尺寸TV的主流技术，随着信息技术和人们生活水平的提升、人们对面板尺寸、解析度及显示器的画质的要求也越来越高。\n\n[0003]基于a-Si TFT第三的Mini-LED背光模组，每颗LED灯珠具有独立第三电路，调光响应速度更快，控制精度更高，能大幅度提升动态分区背光响应的速度和精确每一个分区亮度，还能削减背光模块的厚度。但由于a-Si TFT长时间工作时器件特性发生的偏移，或者制程本身不均一性造成的各分区器件特性不均，会导致显示器的白点发生偏移或不一致，显示器的白点是影响显示器显示效果一个重要因素，显示器的白点决定了显示器的白画面的标准程度，白画面越标准，显示器的显示效果越好，白点发生偏移或不一致则会影响显示效果。\n\n发明内容\n\n[0004]本发明目的在于，提供一种液晶显示面板及显示装置，以解决现有显示装置背光白点偏移的监测问题。\n\n[0005]具体地，本发明采用的技术方案为：\n\n[0006]一种液晶显示面板，包括：相对设置的彩膜基板和阵列基板，所述彩膜基板和所述阵列基板之间设置有液晶层，所述彩膜基板包括底板，所述底板朝向所述阵列基板一面设置有栅极绝缘层，所述栅极绝缘层背离所述底板一面设置有保护层，所述保护层背离所述栅极绝缘层一面设置有黑矩阵层；还包括：感测元件，设置于所述彩膜基板内，所述感测元件包括串联连接于高电位电压和输出电压之间的第一薄膜晶体管和第二薄膜晶体管，所述第一薄膜晶体管用以接收经由所述阵列基板射入所述彩膜基板的背光；所述第一薄膜晶体管的第一栅极连接第一栅极电压，其第一漏极连接所述高电位电压，其第一源极连接所述第二薄膜晶体管的第二漏极，所述第二薄膜晶体管的第二栅极连接第二栅极电压，其第二源极连接所述输出电压；所述感测元件还包括一电容，所述电容的一端与所述第一薄膜晶体管的第一源极和所述第二薄膜晶体管的第二漏极并联连接，所述电容的另一端连接所述第一栅极电压。\n\n[0007]可选的，所述第一薄膜晶体管的第一有源层、第一漏极和第一源极设置于所述保护层内，所述第一薄膜晶体管的第一栅极设置于所述栅极绝缘层内；所述第一有源层在所述保护层背离所述栅极绝缘层一面的正投影位于所述黑矩阵层在所述保护层背离所述栅极绝缘层一面的正投影的外侧。\n\n[0008]可选的，所述第一薄膜晶体管为a-Si薄膜晶体管。\n\n[0009]可选的，所述第一薄膜晶体管的第一漏极和第一源极分别为钼铜合金。\n\n[0010]可选的，所述第二薄膜晶体管的第二有源层、第二漏极和第二源极设置于所述保护层内，所述第二薄膜晶体管的第二栅极设置于所述栅极绝缘层内，所述第二薄膜晶体管的第二有源层与所述黑矩阵层相对应。\n\n[0011]可选的，所述第二薄膜晶体管为开关薄膜晶体管。\n\n[0012]可选的，所述阵列基板朝向所述彩膜基板一面设置有色阻层。\n\n[0013]为实现上述目的，本发明还提供一种显示装置，包括背光模组和如前所述的液晶显示面板，所述背光模组包括多个LED灯珠，所述显示装置还包括与所述感测元件连接的读取模块。\n\n[0014]可选的，所述LED灯珠为Mini LED。\n\n[0015]本发明的有益效果在于，本发明所提供的液晶显示面板及显示装置，通过在液晶显示面板的彩膜基板上集成一个感测元件，背光模组发出的背光经由阵列基板射入彩膜基板后，所述感测元件可对入射的背光中的三原色(R/G/B)的组成比例进行感测，判断背光中的白点是否发生偏移，继而方便后续校正，避免了显示器对颜色显示的偏差，提升了用户的体验，提升画面显示品质。\n\n附图说明\n\n[0016]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0017]图1是本发明一示例性实施例所提供的液晶显示面板及背光模组的结构示意图；\n\n[0018]图2是本发明一示例性实施例所提供的液晶显示面板中感测元件的等效电路图；\n\n[0019]图3是本发明一示例性实施例所提供的显示装置的结构示意图；\n\n[0020]图1中的箭头方向为背光模组出光方向。\n\n[0021]图中部件编号如下：\n\n[0022]100、液晶显示面板，110、彩膜基板，111、底板，112、栅极绝缘层，113、保护层，114、黑色矩阵层，120、阵列基板，121、衬底基板，122、阵列栅极绝缘层，123、阵列保护层，124、色阻层，125、第三薄膜晶体管，1251、第三栅极，1252、第三有源层，1253、第三漏极，1254、第三源极，126、像素电极，130、隔垫物；\n\n[0023]200、感测元件，210、第一薄膜晶体管，211、第一栅极，212、第一漏极，213、第一源极，214、第一有源层，220、第二薄膜晶体管，221、第二栅极，222、第二漏极，223、第二源极，224、第二有源层；\n\n[0024]300、显示装置，310、背光模组，311、LED灯珠，320、读取模块。\n\n具体实施方式\n\n[0025]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0026]所述液晶显示面板的彩膜基板上集成一个感测元件，背光模组发出的背光经由阵列基板射入彩膜基板后，所述感测元件可对入射的背光中的三原色(R/G/B)的组成比例进行感测，判断背光中的白点是否发生偏移，继而方便后续校正，提升画面显示品质。作为典型应用，本发明所述液晶显示面板可被应用于显示装置上，例如薄膜晶体管-液晶显示器(TFT-LCD)。\n\n[0027]参照图1和2，在本发明的一个实施例中，液晶显示面板100包括相对设置的彩膜基板110和阵列基板120，彩膜基板110与阵列基板120之间设置有液晶层(图中未示出)和隔垫物130，彩膜基板110包括底板111、栅极绝缘层112、保护层113和黑矩阵层114，所述栅极绝缘层112设置于所述底板111朝向阵列基板120一面，保护层113设置于栅极绝缘层112背离底板111一面，黑矩阵层114设置于保护层113背离栅极绝缘层112一面。\n\n[0028]阵列基板120包括衬底基板121、阵列栅极绝缘层122、阵列保护层123、色阻层124、第三薄膜晶体管125和像素电极126，阵列栅极绝缘层122设置于衬底基板121朝向彩膜基板110一面，阵列保护层123设置于阵列栅极绝缘层122背离衬底基板121一面，色阻层124设置于阵列保护层123背离阵列栅极绝缘层122一面，所述第三薄膜晶体管125的第三栅极1251设置于所述阵列栅极绝缘层122内，第三有源层1252、第三漏极1253和第三源极1254设置于阵列保护层123内，所述像素电极126设置于色阻层124背离阵列保护层123一面，像素电极126通过过孔沉积并与第三漏极1253或第三源极1254连接。\n\n[0029]在本实施例中，参见图1，彩膜基板110内设置有一感测元件200，所述感测元件200包括第一薄膜晶体管210和第二薄膜晶体管220，所述第一薄膜晶体管210用于接收经由阵列基板120射入彩膜基板110的背光。参见图2，所述感测元件200还包括一电容230，所述第一薄膜晶体管210的第一栅极211连接第一栅极电压Vgg，其第一漏极212连接所述高电位电压VDD，其第一源极213连接所述第二薄膜晶体管220的第二漏极222，所述第二薄膜晶体管220的第二栅极221连接第二栅极电压Vg，其第二源极223连接所述输出电压Vout；所述电容230的一端与所述第一薄膜晶体管210的第一源极213和所述第二薄膜晶体管220的第二漏极222并联连接，所述电容230的另一端连接所述第一栅极电压Vgg。由此形成所述感测元件200的2T1C的感测架构。\n\n[0030]本实施例中，第一薄膜晶体管210作为感测薄膜晶体管(Sensor TFT)接收经由阵列基板120射入彩膜基板110内的背光，并可感测背光中三元色(红/绿/蓝，R/G/B)的组成比例(配比)，从而判定背光白点是否偏移，如果三原色的配比偏离白点的三原色配比，则可判定出现偏移。\n\n[0031]在本发明的一个实施例中，参见图1，所述第一薄膜晶体管210的第一有源层214、第一漏极212和第一源极213设置于所述保护层113内，所述第一薄膜晶体管210的第一栅极211设置于所述栅极绝缘层112内，在本实施例中，所述第一有源层214在所述保护层113背离所述栅极绝缘层112一面的正投影位于所述黑矩阵层114在所述保护层背离所述栅极绝缘层112一面的正投影的外侧，即，在本实施例中，黑矩阵层114设置于保护层113背离栅极绝缘层112一面的一端，保护层113背离栅极绝缘层112一面的另一端不设置黑矩阵层114。如此，背光可不被黑矩阵层114遮挡而直接射入第一薄膜晶体管210的第一有源层214，使得第一薄膜晶体管210可直接感测背光内的三原色的配比。\n\n[0032]在本发明的另一个实施例中，所述第一薄膜晶体管210为a-Si薄膜晶体管(a-SiTFT)。所述第一薄膜晶体管210的第一漏极212和第一源极213分别为钼铜合金(CuMo)。a-SiTFT具有感光特性，便于第一薄膜晶体管210对背光内三原色的感测。\n\n[0033]所述第二薄膜晶体管220的第二有源层224、第二漏极222和第二源极223设置于所述保护层113内，所述第二薄膜晶体管220的第二栅极221设置于所述栅极绝缘层112内，所述第二薄膜晶体管220的第二有源层224与所述黑矩阵层114相对应。所述第二薄膜晶体管220为开关薄膜晶体管(Switch TFT)。第二薄膜晶体管220作为开关薄膜晶体管，无需接收背光，因此可设置于与黑矩阵层114相对应的阵列基板内侧，保证感测元件200内薄膜晶体管的合理布制。\n\n[0034]为实现上述目的，参照图3，本发明还提供一种显示装置300，包括背光模组310和如前所述的液晶显示面板100，所述背光模组310包括多个LED灯珠311，所述显示装置还包括与所述感测元件200连接的读取模块320，感测元件200感测背光中三原色的配比以判定背光中白点是否发生偏移，并将感测结果传输至读取模块320，读取模块320读取判定结果。所述LED灯珠311为Mini LED。\n\n[0035]以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10953, 24007, '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种阵列基板侧面走线制造方法及拼接显示面板。\n\n背景技术\n\n[0002]微型发光二极管(MiniLED或MicroLED)已经用于显示面板，例如MiniLED作为液晶显示面板的背光源，或者MicroLED显示面板作为户外显示，然而，受限于微型发光二极管转移技术，微型发光二极管显示面板难以做到单片大尺寸显示，需要通过多个小尺寸微型发光二极管显示模组拼接成大尺寸的显示面板。\n\n[0003]微型发光二极管显示模组拼接成大尺寸的显示面板时，拼接缝隙会严重降低显示面板的画面整体性，为实现无缝拼接，已经开发了侧面银浆移印技术，在微型发光二极管显示模组的侧面转印银浆形成走线电连接正面的驱动电路，然而，侧面转印银浆技术工艺难度较大，成本较高，银浆容易脱落。\n\n发明内容\n\n[0004]本申请实施例提供了一种阵列基板侧面走线制造方法及拼接显示面板，阵列基板侧面走线制造方法包括：步骤S100：提供一待处理基板，所述待处理基板包括第一表面和第二表面，第一连接端子设置于所述第一表面，第二连接端子设置于所述第二表面；步骤S200：形成保护层，在所述第一表面形成第一保护层，所述第一保护层避开所述第一连接端子设置，在所述第二表面形成第二保护层，所述第二保护层避开所述第二连接端子设置；步骤S300：形成连接金属层，在侧面形成所述连接金属层，所述连接金属层连接所述第一连接端子和所述第二连接端子；步骤S400：形成连接走线，处理所述连接金属层形成所述连接走线，所述连接走线的一端电连接所述第一连接端子，所述连接走线的另一端电连接所述第二连接端子；步骤S500：在所述步骤S300或步骤S400后去除所述保护层。本申请实施例的阵列基板侧面走线制造方法可以解决工艺难度较大，成本较高，侧面走线容易脱落的问题。采用本申请实施例阵列基板侧面走线制造方法制造的显示面板，可以解决拼接缝隙大的问题。\n\n[0005]本申请实施例提供了一种阵列基板侧面走线制造方法，包括如下步骤：\n\n[0006]步骤S100：提供一待处理基板，所述待处理基板包括第一表面和第二表面，所述第一表面设置有第一连接端子，所述第二表面设置有第二连接端子；\n\n[0007]步骤S200：形成保护层，在所述第一表面形成第一保护层，所述第一保护层避开所述第一连接端子设置，在所述第二表面形成第二保护层，所述第二保护层避开所述第二连接端子设置；\n\n[0008]步骤S300：形成连接金属层，在所述待处理基板的侧面形成所述连接金属层，所述连接金属层连接所述第一连接端子和所述第二连接端子；\n\n[0009]步骤S400：形成连接走线，图案化处理所述连接金属层形成所述连接走线，所述连接走线的一端电连接所述第一连接端子，所述连接走线的相对另一端电连接所述第二连接端子；\n\n[0010]步骤S500：在所述步骤S300或步骤S400后去除所述保护层。\n\n[0011]可选的，在本申请的一些实施例中，所述步骤S300中形成所述连接金属层的方法包括：通过物理气相沉积或磁控溅射的方法形成所述连接金属层。\n\n[0012]可选的，在本申请的一些实施例中，所述步骤S400中形成所述连接走线的方法包括：通过激光镭射所述连接金属层形成所述连接走线。\n\n[0013]可选的，在本申请的一些实施例中，所述步骤S200中形成所述保护层的方法包括：通过涂布光阻或侵泡光阻形成所述保护层。\n\n[0014]可选的，在本申请的一些实施例中，所述步骤S500中去除所述保护层的方法包括：使用光阻剥离液去除所述保护层。\n\n[0015]可选的，在本申请的一些实施例中，在所述步骤S200之后还包括如下步骤：\n\n[0016]步骤S10：将所述第一表面和所述侧面的连接处进行倒角处理形成过渡面；将所述第二表面和所述侧面的连接处进行倒角处理形成过渡面。\n\n[0017]可选的，在本申请的一些实施例中，所述待处理基板还包括：设置于所述第一表面的薄膜晶体管和布线，所述布线包括扫描线和数据线，所述第一连接端子与任一种所述布线电连接。\n\n[0018]可选的，在本申请的一些实施例中，与所述第一连接端子电连接的所述布线的宽度小于所述第一连接端子的宽度。\n\n[0019]相应的，本申请实施例还提供了一种拼接显示面板，包括拼接设置的第一阵列基板和第二阵列基板，所述第一阵列基板采用如上述任一项所述的阵列基板侧面走线制造方法制造而成，所述第一阵列基板的所述第二连接端子与驱动芯片电连接。\n\n[0020]可选的，在本申请的一些实施例中，还包括阵列设置在所述第一阵列基板和所述第二阵列基板上的微型发光二极管。\n\n[0021]本申请实施例中，提供了一种阵列基板侧面走线制造方法及拼接显示面板，本申请实施例的阵列基板侧面走线制造方法工艺简单，成本较低，侧面走线与基板结合力强，侧面走线不易脱落。采用本申请实施例阵列基板侧面走线制造方法制造的显示面板，拼接缝隙小，可实现无缝拼接。\n\n附图说明\n\n[0022]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0023]图1是本申请一实施例提供的阵列基板侧面走线制造方法的第一种步骤流程图；\n\n[0024]图2是本申请一实施例提供的阵列基板侧面走线制造方法的第二种步骤流程图；\n\n[0025]图3是本申请一实施例提供的阵列基板侧面走线制造方法的第三种步骤流程图；\n\n[0026]图4至图9是本申请一实施例提供的阵列基板侧面走线制造过程中阵列基板的变化过程；\n\n[0027]图10是本申请一实施例提供的微型发光二极管阵列基板的示意图；\n\n[0028]图11是本申请一实施例提供的拼接显示面板的第一种结构示意图；\n\n[0029]图12是本申请一实施例提供的拼接显示面板的第二种结构示意图。\n\n具体实施方式\n\n[0030]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0031]本申请实施例提供一种阵列基板侧面走线制造方法及拼接显示面板。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0032]实施例一、\n\n[0033]请参阅图1、图2、图4～图9，图1为本申请实施例提供的阵列基板侧面走线制造方法的第一种步骤流程图，图2为本申请实施例提供的阵列基板侧面走线制造方法的第二种步骤流程图，图4～图9示意了本申请实施例提供的阵列基板侧面走线制造过程中阵列基板的变化过程。本申请实施例的阵列基板侧面走线制造方法包括如下的步骤S100、步骤S200、步骤S300、步骤S400、步骤S500。\n\n[0034]步骤S100：如图4所示，提供一待处理基板10，待处理基板10包括第一表面11和第二表面12，第一表面11设置有第一连接端子110，第二表面12设置有第二连接端子120。\n\n[0035]具体的，多个第一连接端子110排布设置至于第一表面11，多个第二连接端子120排布设置至于第二表面12。\n\n[0036]具体的，第一表面11为待处理基板10的正面，第二表面12则为待处理基板10的背面。\n\n[0037]步骤S200：如图5所示，形成保护层，在第一表面11形成第一保护层210，第一保护层210避开第一连接端子110设置，在第二表面12形成第二保护层220，第二保护层220避开第二连接端子120设置。\n\n[0038]具体的，第一保护层210覆盖第一表面11，并露出第一连接端子110，第一保护层210覆盖第一表面11并至少露出第一连接端子110的部分区域；第二保护层220覆盖第二表面12，并露出第二连接端子120，第二保护层220覆盖第二表面12并至少露出第二连接端子120的部分区域。\n\n[0039]步骤S300：如图7所示，形成连接金属层300，在待处理基板10的侧面13形成连接金属层300，连接金属层300连接第一连接端子110和第二连接端子120。\n\n[0040]具体的，连接金属层300从侧面13电连接于第一连接端子110和第二连接端子120之间；或者连接金属层300连续分布在第一表面11部分区域、侧面13、第二表面12部分区域，并电连接于第一连接端子110和第二连接端子120之间。连接金属层300电连接于第一连接端子110和第二连接端子120之间的通常方式为物理直接搭接。连接金属层300可以覆盖第一连接端子110和第二连接端子120而搭接。\n\n[0041]步骤S400：如图9所示，形成连接走线310，图案化处理连接金属层300形成连接走线310，连接走线310的一端电连接第一连接端子110，连接走线310的相对另一端电连接第二连接端子120。\n\n[0042]步骤S500：在步骤S300或步骤S400后去除保护层。\n\n[0043]具体的，请参阅图1示意了在步骤S400之后去除保护层，请参阅图2示意了在步骤S300之后去除保护层。\n\n[0044]具体的，如图8所示，去除保护层时，如果金属层300有同时分布在保护层的表面时，保护层的表面的金属层部分会一同被去掉，只保留电连接于第一连接端子110和第二连接端子120之间的金属层部分。\n\n[0045]在一些实施例中，步骤S300中形成连接金属层300的方法包括：通过物理气相沉积或磁控溅射的方法形成连接金属层300。\n\n[0046]具体的，通过物理气相沉积(PVD)或磁控溅射的方法形成连接金属层300，可以使得连接金属层300和后续的连接走线310与待处理基板10的侧面13形成致密的强结合力，金属层300和连接走线310不容易脱落，具有高可靠性和高信赖性。\n\n[0047]在一些实施例中，步骤S400中形成连接走线310的方法包括：通过激光镭射连接金属层300形成连接走线310。\n\n[0048]具体的，通过激光的光刻将金属层300制作成连接走线310，连接走线310具有预设的宽度，每一条连接走线310将预设的第一连接端子110连接至对应的第二连接端子120。\n\n[0049]在一些实施例中，步骤S200中形成保护层的方法包括：通过涂布光阻或侵泡光阻形成保护层。\n\n[0050]具体的，保护层包括第一保护层210和第二保护层220。可以只在第一连接端子110和第二连接端子120之外的区域通过涂布光阻或侵泡光阻形成保护层；也可以先在第一表面11的整面和第二表面12的整面通过涂布光阻或侵泡光阻形成保护层，然后通过曝光、显影等方法，使得第一保护层210露出第一连接端子110和第二保护层220露出第二连接端子120。\n\n[0051]在一些实施例中，步骤S500中去除保护层的方法包括：使用光阻剥离液去除保护层。\n\n[0052]在一些实施例中，在步骤S200之后还包括步骤S10。\n\n[0053]步骤S10：请参阅图3，将第一表面11和侧面13的连接处进行倒角处理形成过渡面；将第二表面12和侧面13的连接处进行倒角处理形成过渡面。\n\n[0054]具体的，请参阅图6，将第一表面11和侧面13的连接处进行倒角处理形成第一过渡面131，将第二表面12和侧面13的连接处进行倒角处理形成第二过渡面132。通过倒角处理形成过渡面，使得金属层300和连接走线310不会直角弯折，进一步提升金属层300和连接走线310与待处理基板10的侧面13的结合力，使得连接走线310不容易脱落，提高可靠性。\n\n[0055]在一些实施例中，待处理基板10还包括：设置于第一表面11的薄膜晶体管和布线，布线包括扫描线和数据线，第一连接端子110与任一种布线电连接。\n\n[0056]具体的，待处理基板可以为阵列基板，阵列基板上包括阵列排布的薄膜晶体管、布线，还可以包括驱动电路，在此不做限定。\n\n[0057]在一些实施例中，与第一连接端子110电连接的布线的宽度小于第一连接端子110的宽度。\n\n[0058]具体的，增加第一连接端子110的宽度，可以提升连接走线310与第一连接端子110的连接强度，提升可靠性。还可以增加第二连接端子120的宽度，可以提升连接走线310与第二连接端子120的连接强度，提升可靠性。\n\n[0059]在上述制作步骤中完整了阵列基板侧面走线的制造。在一些实施例中，还可以在阵列基板上制作微型发光二极管，如图10所示，将微型发光二极管500转移至阵列基板上，完成微型发光二极管阵列基板20的制作。\n\n[0060]在本申请实施例中，通过物理气相沉积(PVD)或磁控溅射的方法形成连接金属层300，可以使得连接金属层300和后续的连接走线310与待处理基板10的侧面13形成致密的强结合力，金属层300和连接走线310不容易脱落，具有高可靠性和高信赖性。\n\n[0061]在本申请实施例中，将第一表面11和侧面13的连接处进行倒角处理形成过渡面；将第二表面12和侧面13的连接处进行倒角处理形成过渡面，通过倒角处理形成过渡面，使得金属层300和连接走线310不会直角弯折，进一步提升金属层300和连接走线310与待处理基板10的侧面13的结合力，使得连接走线310不容易脱落，提高可靠性。\n\n[0062]实施例二、\n\n[0063]如图11所示，本申请实施例还提供了一种拼接显示面板30，拼接显示面板30包括拼接设置的第一阵列基板21和第二阵列基板22，第一阵列基板21采用上述实施例任一项所述的阵列基板侧面走线制造方法制造而成，第一阵列基板21的第二连接端子120与驱动芯片电连接。\n\n[0064]具体的，拼接显示面板30包括拼接设置的第一阵列基板21和第二阵列基板22，第一阵列基板21采用上述实施例任一项所述的阵列基板侧面走线制造方法制造而成，第一阵列基板21包括第一连接端子110和第二连接端子120，连接走线310电连接于第一连接端子110和第二连接端子120之间，第一表面11设置有薄膜晶体管和布线，布线包括扫描线和数据线，通过第一连接端子110、连接走线310和第二连接端子120，将第一阵列基板21的第一表面11(正面)上的布线导通至第二表面12(背面)，然后通过第二连接端子120电连接驱动芯片等驱动系统，可以减小第一阵列基板21在拼接处的非显示区的宽度，从而减小拼接缝隙，甚至实现无缝拼接。\n\n[0065]在一些实施例中，如图11所示，拼接显示面板30还可以包括阵列设置在第一阵列基板21和第二阵列基板22上的微型发光二极管500。\n\n[0066]具体的，拼接显示面板30包括微型发光二极管(MiniLED或MicroLED)时，拼接显示面板30可以作为液晶显示面板的背光源，拼接显示面板30也可以用微型发光二极管作为显示像素直接显示图像，在此不做限定。\n\n[0067]如图12所示，示意了拼接显示面板30包括多个第一阵列基板21和多个第二阵列基板22。第一阵列基板21可以采用上述实施例任一项所述的阵列基板侧面走线制造方法制造而成，第二阵列基板22也可以采用上述实施例任一项所述的阵列基板侧面走线制造方法制造而成，在此不做限定。当第一阵列基板21和第二阵列基板22采用上述实施例任一项所述的阵列基板侧面走线制造方法制造而成时，第一阵列基板21和第二阵列基板22均可以具有窄的非显示区宽度，从而减小拼接缝隙，还可以减小第一阵列基板21和第二阵列基板22的边框宽度，从而实现拼接显示面板30的大尺寸显示、无缝拼接和窄边框显示。\n\n[0068]以上对本申请实施例所提供的一种阵列基板侧面走线制造方法及拼接显示面板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种阵列基板侧面走线制造方法及拼接显示面板。\n\n背景技术\n\n[0002]微型发光二极管(MiniLED或MicroLED)已经用于显示面板，例如MiniLED作为液晶显示面板的背光源，或者MicroLED显示面板作为户外显示，然而，受限于微型发光二极管转移技术，微型发光二极管显示面板难以做到单片大尺寸显示，需要通过多个小尺寸微型发光二极管显示模组拼接成大尺寸的显示面板。\n\n[0003]微型发光二极管显示模组拼接成大尺寸的显示面板时，拼接缝隙会严重降低显示面板的画面整体性，为实现无缝拼接，已经开发了侧面银浆移印技术，在微型发光二极管显示模组的侧面转印银浆形成走线电连接正面的驱动电路，然而，侧面转印银浆技术工艺难度较大，成本较高，银浆容易脱落。\n\n发明内容\n\n[0004]本申请实施例提供了一种阵列基板侧面走线制造方法及拼接显示面板，阵列基板侧面走线制造方法包括：步骤S100：提供一待处理基板，所述待处理基板包括第一表面和第二表面，第一连接端子设置于所述第一表面，第二连接端子设置于所述第二表面；步骤S200：形成保护层，在所述第一表面形成第一保护层，所述第一保护层避开所述第一连接端子设置，在所述第二表面形成第二保护层，所述第二保护层避开所述第二连接端子设置；步骤S300：形成连接金属层，在侧面形成所述连接金属层，所述连接金属层连接所述第一连接端子和所述第二连接端子；步骤S400：形成连接走线，处理所述连接金属层形成所述连接走线，所述连接走线的一端电连接所述第一连接端子，所述连接走线的另一端电连接所述第二连接端子；步骤S500：在所述步骤S300或步骤S400后去除所述保护层。本申请实施例的阵列基板侧面走线制造方法可以解决工艺难度较大，成本较高，侧面走线容易脱落的问题。采用本申请实施例阵列基板侧面走线制造方法制造的显示面板，可以解决拼接缝隙大的问题。\n\n[0005]本申请实施例提供了一种阵列基板侧面走线制造方法，包括如下步骤：\n\n[0006]步骤S100：提供一待处理基板，所述待处理基板包括第一表面和第二表面，所述第一表面设置有第一连接端子，所述第二表面设置有第二连接端子；\n\n[0007]步骤S200：形成保护层，在所述第一表面形成第一保护层，所述第一保护层避开所述第一连接端子设置，在所述第二表面形成第二保护层，所述第二保护层避开所述第二连接端子设置；\n\n[0008]步骤S300：形成连接金属层，在所述待处理基板的侧面形成所述连接金属层，所述连接金属层连接所述第一连接端子和所述第二连接端子；\n\n[0009]步骤S400：形成连接走线，图案化处理所述连接金属层形成所述连接走线，所述连接走线的一端电连接所述第一连接端子，所述连接走线的相对另一端电连接所述第二连接端子；\n\n[0010]步骤S500：在所述步骤S300或步骤S400后去除所述保护层。\n\n[0011]可选的，在本申请的一些实施例中，所述步骤S300中形成所述连接金属层的方法包括：通过物理气相沉积或磁控溅射的方法形成所述连接金属层。\n\n[0012]可选的，在本申请的一些实施例中，所述步骤S400中形成所述连接走线的方法包括：通过激光镭射所述连接金属层形成所述连接走线。\n\n[0013]可选的，在本申请的一些实施例中，所述步骤S200中形成所述保护层的方法包括：通过涂布光阻或侵泡光阻形成所述保护层。\n\n[0014]可选的，在本申请的一些实施例中，所述步骤S500中去除所述保护层的方法包括：使用光阻剥离液去除所述保护层。\n\n[0015]可选的，在本申请的一些实施例中，在所述步骤S200之后还包括如下步骤：\n\n[0016]步骤S10：将所述第一表面和所述侧面的连接处进行倒角处理形成过渡面；将所述第二表面和所述侧面的连接处进行倒角处理形成过渡面。\n\n[0017]可选的，在本申请的一些实施例中，所述待处理基板还包括：设置于所述第一表面的薄膜晶体管和布线，所述布线包括扫描线和数据线，所述第一连接端子与任一种所述布线电连接。\n\n[0018]可选的，在本申请的一些实施例中，与所述第一连接端子电连接的所述布线的宽度小于所述第一连接端子的宽度。\n\n[0019]相应的，本申请实施例还提供了一种拼接显示面板，包括拼接设置的第一阵列基板和第二阵列基板，所述第一阵列基板采用如上述任一项所述的阵列基板侧面走线制造方法制造而成，所述第一阵列基板的所述第二连接端子与驱动芯片电连接。\n\n[0020]可选的，在本申请的一些实施例中，还包括阵列设置在所述第一阵列基板和所述第二阵列基板上的微型发光二极管。\n\n[0021]本申请实施例中，提供了一种阵列基板侧面走线制造方法及拼接显示面板，本申请实施例的阵列基板侧面走线制造方法工艺简单，成本较低，侧面走线与基板结合力强，侧面走线不易脱落。采用本申请实施例阵列基板侧面走线制造方法制造的显示面板，拼接缝隙小，可实现无缝拼接。\n\n附图说明\n\n[0022]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0023]图1是本申请一实施例提供的阵列基板侧面走线制造方法的第一种步骤流程图；\n\n[0024]图2是本申请一实施例提供的阵列基板侧面走线制造方法的第二种步骤流程图；\n\n[0025]图3是本申请一实施例提供的阵列基板侧面走线制造方法的第三种步骤流程图；\n\n[0026]图4至图9是本申请一实施例提供的阵列基板侧面走线制造过程中阵列基板的变化过程；\n\n[0027]图10是本申请一实施例提供的微型发光二极管阵列基板的示意图；\n\n[0028]图11是本申请一实施例提供的拼接显示面板的第一种结构示意图；\n\n[0029]图12是本申请一实施例提供的拼接显示面板的第二种结构示意图。\n\n具体实施方式\n\n[0030]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0031]本申请实施例提供一种阵列基板侧面走线制造方法及拼接显示面板。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0032]实施例一、\n\n[0033]请参阅图1、图2、图4～图9，图1为本申请实施例提供的阵列基板侧面走线制造方法的第一种步骤流程图，图2为本申请实施例提供的阵列基板侧面走线制造方法的第二种步骤流程图，图4～图9示意了本申请实施例提供的阵列基板侧面走线制造过程中阵列基板的变化过程。本申请实施例的阵列基板侧面走线制造方法包括如下的步骤S100、步骤S200、步骤S300、步骤S400、步骤S500。\n\n[0034]步骤S100：如图4所示，提供一待处理基板10，待处理基板10包括第一表面11和第二表面12，第一表面11设置有第一连接端子110，第二表面12设置有第二连接端子120。\n\n[0035]具体的，多个第一连接端子110排布设置至于第一表面11，多个第二连接端子120排布设置至于第二表面12。\n\n[0036]具体的，第一表面11为待处理基板10的正面，第二表面12则为待处理基板10的背面。\n\n[0037]步骤S200：如图5所示，形成保护层，在第一表面11形成第一保护层210，第一保护层210避开第一连接端子110设置，在第二表面12形成第二保护层220，第二保护层220避开第二连接端子120设置。\n\n[0038]具体的，第一保护层210覆盖第一表面11，并露出第一连接端子110，第一保护层210覆盖第一表面11并至少露出第一连接端子110的部分区域；第二保护层220覆盖第二表面12，并露出第二连接端子120，第二保护层220覆盖第二表面12并至少露出第二连接端子120的部分区域。\n\n[0039]步骤S300：如图7所示，形成连接金属层300，在待处理基板10的侧面13形成连接金属层300，连接金属层300连接第一连接端子110和第二连接端子120。\n\n[0040]具体的，连接金属层300从侧面13电连接于第一连接端子110和第二连接端子120之间；或者连接金属层300连续分布在第一表面11部分区域、侧面13、第二表面12部分区域，并电连接于第一连接端子110和第二连接端子120之间。连接金属层300电连接于第一连接端子110和第二连接端子120之间的通常方式为物理直接搭接。连接金属层300可以覆盖第一连接端子110和第二连接端子120而搭接。\n\n[0041]步骤S400：如图9所示，形成连接走线310，图案化处理连接金属层300形成连接走线310，连接走线310的一端电连接第一连接端子110，连接走线310的相对另一端电连接第二连接端子120。\n\n[0042]步骤S500：在步骤S300或步骤S400后去除保护层。\n\n[0043]具体的，请参阅图1示意了在步骤S400之后去除保护层，请参阅图2示意了在步骤S300之后去除保护层。\n\n[0044]具体的，如图8所示，去除保护层时，如果金属层300有同时分布在保护层的表面时，保护层的表面的金属层部分会一同被去掉，只保留电连接于第一连接端子110和第二连接端子120之间的金属层部分。\n\n[0045]在一些实施例中，步骤S300中形成连接金属层300的方法包括：通过物理气相沉积或磁控溅射的方法形成连接金属层300。\n\n[0046]具体的，通过物理气相沉积(PVD)或磁控溅射的方法形成连接金属层300，可以使得连接金属层300和后续的连接走线310与待处理基板10的侧面13形成致密的强结合力，金属层300和连接走线310不容易脱落，具有高可靠性和高信赖性。\n\n[0047]在一些实施例中，步骤S400中形成连接走线310的方法包括：通过激光镭射连接金属层300形成连接走线310。\n\n[0048]具体的，通过激光的光刻将金属层300制作成连接走线310，连接走线310具有预设的宽度，每一条连接走线310将预设的第一连接端子110连接至对应的第二连接端子120。\n\n[0049]在一些实施例中，步骤S200中形成保护层的方法包括：通过涂布光阻或侵泡光阻形成保护层。\n\n[0050]具体的，保护层包括第一保护层210和第二保护层220。可以只在第一连接端子110和第二连接端子120之外的区域通过涂布光阻或侵泡光阻形成保护层；也可以先在第一表面11的整面和第二表面12的整面通过涂布光阻或侵泡光阻形成保护层，然后通过曝光、显影等方法，使得第一保护层210露出第一连接端子110和第二保护层220露出第二连接端子120。\n\n[0051]在一些实施例中，步骤S500中去除保护层的方法包括：使用光阻剥离液去除保护层。\n\n[0052]在一些实施例中，在步骤S200之后还包括步骤S10。\n\n[0053]步骤S10：请参阅图3，将第一表面11和侧面13的连接处进行倒角处理形成过渡面；将第二表面12和侧面13的连接处进行倒角处理形成过渡面。\n\n[0054]具体的，请参阅图6，将第一表面11和侧面13的连接处进行倒角处理形成第一过渡面131，将第二表面12和侧面13的连接处进行倒角处理形成第二过渡面132。通过倒角处理形成过渡面，使得金属层300和连接走线310不会直角弯折，进一步提升金属层300和连接走线310与待处理基板10的侧面13的结合力，使得连接走线310不容易脱落，提高可靠性。\n\n[0055]在一些实施例中，待处理基板10还包括：设置于第一表面11的薄膜晶体管和布线，布线包括扫描线和数据线，第一连接端子110与任一种布线电连接。\n\n[0056]具体的，待处理基板可以为阵列基板，阵列基板上包括阵列排布的薄膜晶体管、布线，还可以包括驱动电路，在此不做限定。\n\n[0057]在一些实施例中，与第一连接端子110电连接的布线的宽度小于第一连接端子110的宽度。\n\n[0058]具体的，增加第一连接端子110的宽度，可以提升连接走线310与第一连接端子110的连接强度，提升可靠性。还可以增加第二连接端子120的宽度，可以提升连接走线310与第二连接端子120的连接强度，提升可靠性。\n\n[0059]在上述制作步骤中完整了阵列基板侧面走线的制造。在一些实施例中，还可以在阵列基板上制作微型发光二极管，如图10所示，将微型发光二极管500转移至阵列基板上，完成微型发光二极管阵列基板20的制作。\n\n[0060]在本申请实施例中，通过物理气相沉积(PVD)或磁控溅射的方法形成连接金属层300，可以使得连接金属层300和后续的连接走线310与待处理基板10的侧面13形成致密的强结合力，金属层300和连接走线310不容易脱落，具有高可靠性和高信赖性。\n\n[0061]在本申请实施例中，将第一表面11和侧面13的连接处进行倒角处理形成过渡面；将第二表面12和侧面13的连接处进行倒角处理形成过渡面，通过倒角处理形成过渡面，使得金属层300和连接走线310不会直角弯折，进一步提升金属层300和连接走线310与待处理基板10的侧面13的结合力，使得连接走线310不容易脱落，提高可靠性。\n\n[0062]实施例二、\n\n[0063]如图11所示，本申请实施例还提供了一种拼接显示面板30，拼接显示面板30包括拼接设置的第一阵列基板21和第二阵列基板22，第一阵列基板21采用上述实施例任一项所述的阵列基板侧面走线制造方法制造而成，第一阵列基板21的第二连接端子120与驱动芯片电连接。\n\n[0064]具体的，拼接显示面板30包括拼接设置的第一阵列基板21和第二阵列基板22，第一阵列基板21采用上述实施例任一项所述的阵列基板侧面走线制造方法制造而成，第一阵列基板21包括第一连接端子110和第二连接端子120，连接走线310电连接于第一连接端子110和第二连接端子120之间，第一表面11设置有薄膜晶体管和布线，布线包括扫描线和数据线，通过第一连接端子110、连接走线310和第二连接端子120，将第一阵列基板21的第一表面11(正面)上的布线导通至第二表面12(背面)，然后通过第二连接端子120电连接驱动芯片等驱动系统，可以减小第一阵列基板21在拼接处的非显示区的宽度，从而减小拼接缝隙，甚至实现无缝拼接。\n\n[0065]在一些实施例中，如图11所示，拼接显示面板30还可以包括阵列设置在第一阵列基板21和第二阵列基板22上的微型发光二极管500。\n\n[0066]具体的，拼接显示面板30包括微型发光二极管(MiniLED或MicroLED)时，拼接显示面板30可以作为液晶显示面板的背光源，拼接显示面板30也可以用微型发光二极管作为显示像素直接显示图像，在此不做限定。\n\n[0067]如图12所示，示意了拼接显示面板30包括多个第一阵列基板21和多个第二阵列基板22。第一阵列基板21可以采用上述实施例任一项所述的阵列基板侧面走线制造方法制造而成，第二阵列基板22也可以采用上述实施例任一项所述的阵列基板侧面走线制造方法制造而成，在此不做限定。当第一阵列基板21和第二阵列基板22采用上述实施例任一项所述的阵列基板侧面走线制造方法制造而成时，第一阵列基板21和第二阵列基板22均可以具有窄的非显示区宽度，从而减小拼接缝隙，还可以减小第一阵列基板21和第二阵列基板22的边框宽度，从而实现拼接显示面板30的大尺寸显示、无缝拼接和窄边框显示。\n\n[0068]以上对本申请实施例所提供的一种阵列基板侧面走线制造方法及拼接显示面板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10954, 24008, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种面板及其制备方法。\n\n背景技术\n\n[0002]在对现有技术的研究和实践过程中，本申请的发明人发现，Mini LED(次毫米发光二极管)、Micro LED(微型发光二极管)制作工艺较为复杂，且目前Micro LED巨量转移的成熟度低、可靠性较低、高成本，大尺寸难度极大，对其未来发展潜在负面影响。\n\n[0003]而电致发光显示面板中发光层的材料一般为有机材料或量子点材料，上述材料的发光寿命相对较短，特别是发蓝色光的材料，因此需提供一种新型显示技术的显示面板以降低工艺难度和提高显示面板的使用寿命。\n\n发明内容\n\n[0004]本申请实施例提供一种面板，可以提高显示面板的使用寿命和简化工艺。\n\n[0005]本申请实施例提供一种面板，其包括：\n\n[0006]基板；\n\n[0007]薄膜晶体管层，所述薄膜晶体管层设置在所述基板上，所述薄膜晶体管层包括多个薄膜晶体管；\n\n[0008]第一导电层，所述第一导电层设置在所述薄膜晶体管层上，所述第一导电层包括彼此分离的第一电极和第二电极，所述第一电极电连接于所述薄膜晶体管；\n\n[0009]像素定义层，所述像素定义层设置在所述第一导电层上，所述像素定义层开设有开口；\n\n[0010]至少一个LED，所述LED设置在所述开口内，所述LED包括相对设置的第一端部和第二端部，所述第一端部设置在所述第一电极上，所述第二端部设置在所述第二电极上；\n\n[0011]第二导电层，所述第二导电层设置在所述LED上，所述第二导电层包括第一导电部和第二导电部，所述第一导电部电连接于所述第一端部和所述第一电极，所述第二导电部电连接于所述第二端部和所述第二电极。\n\n[0012]可选的，在本申请的一些实施例中，所述面板还包括绝缘材料，所述开口包括第一开口，所述LED设置在所述第一开口内，所述绝缘材料设置在所述第一开口内，且覆盖所述LED、所述第二导电部的部分以及所述第一导电部。\n\n[0013]可选的，在本申请的一些实施例中，所述第一导电层还包括第三电极；所述开口还包括第二开口，所述第二开口裸露所述第三电极；\n\n[0014]所述面板还包括发光层和第四电极，所述发光层设置在所述第二开口内；所述第四电极覆盖在所述像素定义层、所述发光层和所述绝缘材料上；所述第四电极连接于所述第二导电部。\n\n[0015]可选的，在本申请的一些实施例中，所述LED为发蓝光的LED；所述发光层包括红色发光层和绿色发光层。\n\n[0016]可选的，在本申请的一些实施例中，多个所述薄膜晶体管包括第一薄膜晶体管和第二薄膜晶体管，所述薄膜晶体管层还包括公共线，所述第一薄膜晶体管电连接于所述第一电极，所述公共线电连接于所述第二电极，所述第二薄膜晶体管电连接于所述第三电极。\n\n[0017]可选的，在本申请的一些实施例中，所述面板还包括固定部，所述固定部设置在所述开口内，且固定连接于所述LED、所述第一电极和第二电极。\n\n[0018]可选的，在本申请的一些实施例中，所述固定部包括固定性质的材料和用于阻挡刻蚀的材料。\n\n[0019]可选的，在本申请的一些实施例中，所述面板还包括光转换层，所述光转换层设置在所述开口内，且覆盖所述LED。\n\n[0020]可选的，在本申请的一些实施例中，所述LED还包括半导体层和保护层；所述半导体层连接在所述第一端部和所述第二端部之间；所述保护层覆盖所述半导体层，且至多覆盖所述第一端部的部分和至多覆盖所述第二端部的部分。\n\n[0021]可选的，在本申请的一些实施例中，所述像素定义层分别覆盖所述第一导电部的部分和所述第二导电部的部分。\n\n[0022]可选的，在本申请的一些实施例中，至少一个所述LED包括纳米LED。\n\n[0023]相应的，本申请实施例还涉及一种面板的制备方法，其包括以下步骤：\n\n[0024]在基板上形成薄膜晶体管层；\n\n[0025]在所述薄膜晶体管层上形成图案化的第一导电层，所述第一导电层包括彼此分离的第一电极和第二电极；\n\n[0026]在所述第一导电层上放置至少一个LED，并对准所述第一电极和所述LED的第一端部以及对准所述第二电极和所述LED的第二端部，所述第一端部和所述第二端部相对设置；\n\n[0027]在所述LED上形成图案化的第二导电层，所述第二导电层包括第一导电部和第二导电部，所述第一导电部电连接于所述第一端部和所述第一电极，所述第二导电部电连接于所述第二端部和所述第二电极。\n\n[0028]可选的，在本申请的一些实施例中，所述第一导电层还包括第三电极，在所述第一导电层上放置至少一个LED的步骤之前，所述制备方法还包括以下步骤：\n\n[0029]在所述第一导电层上形成图案化的像素定义层和开口，所述开口包括第一开口和第二开口，所述第一开口裸露所述第一电极和所述第二电极，所述第二开口裸露所述第三电极；\n\n[0030]在所述LED上形成图案化的第二导电层的步骤之后，所述制备方法还包括以下步骤：\n\n[0031]在所述第一开口内填充绝缘材料，使所述绝缘材料覆盖所述LED、所述第二导电部的部分以及所述第一导电部，所述第二导电部的部分裸露；\n\n[0032]在所述第二开口内形成发光层；\n\n[0033]依次在所述像素定义层、所述发光层和所述绝缘材料上形成第四电极和封装层，所述第四电极连接于所述第二导电部。\n\n[0034]可选的，在本申请的一些实施例中，在所述第一导电层上放置至少一个LED的步骤之前，所述制备方法还包括以下步骤：\n\n[0035]在所述第一导电层上形成图案化的牺牲层和第一开口，所述第一开口裸露所述第一电极和所述第二电极；\n\n[0036]在所述第一导电层上放置至少一个LED，并对准所述第一电极和所述LED的第一端部以及对准所述第二电极和所述LED的第二端部的步骤，包括：\n\n[0037]在所述第一开口内放置LED溶液，所述LED溶液覆盖所述第一导电层，所述LED溶液包括所述LED、溶剂、固定性质的材料和用于阻挡刻蚀的材料；\n\n[0038]对准所述第一电极和所述LED的第一端部以及对准所述第二电极和所述LED的第二端部；\n\n[0039]干燥所述LED溶液，去除所述溶剂，以使所述LED通过所述固定性质的材料固定在所述薄膜晶体管层上。\n\n[0040]可选的，在本申请的一些实施例中，在干燥所述LED溶液的步骤之后，所述制备方法还包括以下步骤：\n\n[0041]去除所述牺牲层；\n\n[0042]在所述薄膜晶体管层上形成图案化的光阻层，以所述光阻层为掩模，蚀刻掉所述LED和所述第一导电层上裸露的材料。所述光阻层上开设有第二开口和第三开口，所述第三开口对应于所述第一电极和所述LED的第一端部，所述第三开口对应于所述第二电极和所述LED的第二端部。\n\n[0043]可选的，在本申请的一些实施例中，所述光阻层具有底切结构，在所述LED上形成图案化的第二导电层的步骤包括：\n\n[0044]所述光阻层上形成导电材料层，所述导电材料层覆盖所述第一电极和所述LED的第一端部，以及覆盖所述第二电极和所述LED的第二端部；\n\n[0045]去除所述光阻层，形成图案化的所述第二导电层，使所述第一导电部电连接于所述第一端部和所述第一电极，所述第二导电部电连接于所述第二端部和所述第二电极。\n\n[0046]可选的，在本申请的一些实施例中，在去除所述光阻层的步骤之后，所述制备方案还包括以下步骤：\n\n[0047]在所述第二导电层上形成像素定义层，所述像素定义层上开设有第四开口，所述第四开口裸露所述LED；\n\n[0048]在所述第四开口内形成光转换层，之后在所述光转换层上形成封装层。\n\n[0049]本申请实施例采用在薄膜晶体管层上依次设置第一导电层、像素定义层、至少一个LED和第二导电层，第一导电层包括彼此分离的第一电极和第二电极，第一电极电连接于薄膜晶体管；像素定义层开设有开口；LED设置在开口内，LED包括相对设置的第一端部和第二端部，第一端部设置在第一电极上，第二端部设置在第二电极上；第二导电层包括第一导电部和第二导电部，第一导电部电连接于第一端部和第一电极，第二导电部电连接于第二端部和第二电极。本实施例采用不同于Mini-LED面板和Micro-LED面板中LED芯片的LED的结构替换LED芯片，达到简化工艺的效果；另外采用LED发光的结构相较于单纯的电致发光显示面板具有更长的使用寿命。\n\n附图说明\n\n[0050]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0051]图1是本申请实施例提供的面板的第一种结构示意图；\n\n[0052]图2为本申请实施例的提供的面板的第一种结构部分的俯视图；\n\n[0053]图3是本申请实施例提供的面板的LED的第一结构示意图；\n\n[0054]图4是本申请实施例提供的面板的LED的第二结构示意图；\n\n[0055]图5是本申请实施例提供的面板的第二种结构示意图；\n\n[0056]图6是本申请实施例提供的面板的第二种结构部分的俯视图；\n\n[0057]图7是本申请实施例提供的面板的制备方法的第一种方法流程图；\n\n[0058]图8是本申请实施例提供的面板的制备方法的第二种方法流程图；\n\n[0059]图9是本申请实施例提供的面板的制备方法的第二种方法流程图中步骤B101-步骤B104的示意图；\n\n[0060]图10是本申请实施例提供的面板的制备方法的第二种方法流程图中步骤B105-步骤B108的示意图；\n\n[0061]图11是本申请实施例提供的面板的制备方法的第三种方法流程图；\n\n[0062]图12是本申请实施例提供的面板的制备方法的第三种方法流程图中步骤B201-步骤B205的示意图；\n\n[0063]图13是本申请实施例提供的面板的制备方法的第三种方法流程图中步骤B206-步骤B209的示意图。\n\n具体实施方式\n\n[0064]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0065]本申请实施例提供一种面板及其制备方法，下文进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0066]请参照图1和图2，本申请实施例提供一种面板100，其包括基板11、薄膜晶体管层12、第一导电层13、像素定义层14、至少一个LED(Light-Emitting Diode，发光二极管)15和第二导电层16。\n\n[0067]薄膜晶体管层12设置在基板11上。薄膜晶体管层12包括多个薄膜晶体管TFT。\n\n[0068]第一导电层13设置在薄膜晶体管层12上。第一导电层13包括彼此分离的第一电极131和第二电极132。第一电极131电连接于薄膜晶体管TFT。\n\n[0069]像素定义层14设置在第一导电层13上。像素定义层14开设有开口141。\n\n[0070]LED15设置在开口141内。LED15包括相对设置的第一端部151和第二端部152，如图3或图4所示。第一端部151设置在第一电极131上，第二端部152设置在第二电极132上。\n\n[0071]第二导电层16设置在LED15上。第二导电层16包括第一导电部161和第二导电部162，第一导电部161电连接于第一端部151和第一电极131。第二导电部162电连接于第二端部152和第二电极132。\n\n[0072]本申请实施例采用在薄膜晶体管层12上设置LED15的结构替换了现有技术中Mini-LED面板和Micro-LED面板，达到简化工艺的效果；另外上述的结构相较于单纯的电致发光显示面板具有更长的使用寿命。\n\n[0073]可选的，基板11可为硬性基板或者柔性衬底。基板11的材质包括玻璃、蓝宝石、硅、二氧化硅、聚乙烯、聚丙烯、聚苯乙烯、聚乳酸、聚对苯二甲酸乙二醇酯、聚酰亚胺或聚氨酯中的一种\n\n[0074]可选的，薄膜晶体管TFT可以是顶栅型薄膜晶体管或底栅型薄膜晶体管。薄膜晶体管TFT可以是P型薄膜晶体管或N型薄膜晶体管。\n\n[0075]本申请的实施例以薄膜晶体管TFT为N型的顶栅薄膜晶体管为例进行阐述，但不限于此。\n\n[0076]可选的，薄膜晶体管层12包括依次设置在基板11上的有源层121、栅极绝缘层122、第一金属层123、层间介电层124、第二金属层125、第一平坦层126和第二平坦层127。\n\n[0077]其中，第一金属层123包括栅极。第二金属层125包括源极、漏极和公共线12c。\n\n[0078]漏极连接于第一电极131。公共线12c连接于第二电极132。\n\n[0079]有源层121、栅极、源极和漏极形成薄膜晶体管TFT。\n\n[0080]可选的，第一金属层123和第二金属层125的材料可以使用纯金属或合金，比如金、银、钨、钼、铁、铝、铝-硅、铝-钛等材料。\n\n[0081]可选的，栅极绝缘层122的材料可包括氮化硅、氧化硅以及有机光阻中的至少一种。\n\n[0082]可选的，第一平坦层126和第二平坦层127的材料可以是有机透明膜层，比如透明光刻胶，环氧树脂、聚酰亚胺、聚乙烯醇、聚甲基丙烯酸甲酯、聚苯乙烯等。\n\n[0083]可选的，第一导电层13和第二导电层16的材料可以是氧化铟锡、氧化铟锌等氧化物；还可以为各种导电特性的金属、合金以及化合物及其混合物，例如可以使用金、银或铂等等。\n\n[0084]可选的，至少一个LED15包括纳米LED。\n\n[0085]可选的，LED15的长度为2-5微米，比如可以是2微米、3微米、4微米或5微米；宽度为100-500纳米，比如可以是100纳米、200纳米、300纳米、400纳米或500纳米；LED15呈棒状结构，但不限于此。\n\n[0086]可选的，请参照图3，LED15还包括半导体层153。半导体层153连接在第一端部151和第二端部152之间。第一端部151为P型半导体和N型半导体中的一者，第二端部152为P型半导体和N型半导体中的另一者。\n\n[0087]可选的，第一导电部161和第二导电部162均未连接半导体层153，避免发生短路。\n\n[0088]请参照图4，LED15还可以包括保护层154。保护层154覆盖半导体层153，且至多覆盖第一端部151的部分和至多覆盖第二端部152的部分。也即，LED15至少裸露出第一端部151的部分，以及至少裸露第二端部152的部分。\n\n[0089]可选的，在本申请的实施例中，面板100还可以包括绝缘材料17。开口141包括第一开口14a，LED15设置在所述第一开口14a内。绝缘材料17设置在第一开口14a内，且覆盖LED15、第二导电部162的部分以及第一导电部161。\n\n[0090]本实施例采用绝缘材料17对LED15进行封装，使得LED15与薄膜晶体管TFT连接的第一端部151被绝缘材料覆盖，另一边的第二端部152至少部分裸露。\n\n[0091]在本申请的实施例中，第一导电层13还包括第三电极133。开口141还包括第二开口14b。第二开口14b裸露第三电极133。\n\n[0092]面板100还包括发光层18和第四电极19。发光层18设置在第二开口14b内。第四电极19覆盖在像素定义层14、发光层18和绝缘材料17上。第四电极19连接于第二导电部162。\n\n[0093]本实施例中，多个所述薄膜晶体管TFT还可以包括第一薄膜晶体管TFT1和第二薄膜晶体管TFT2，第一薄膜晶体管TFT1电连接于所述第一电极131，所述第二薄膜晶体管TFT2电连接于所述第三电极133。\n\n[0094]可选的，发光层18的材料可以是有机材料，比如可以是Alq3、双(2-甲基-8-羟基喹啉-N1,O8)-(1,1\'-联苯-4-羟基)铝(BAlq)、DPVBi、Almq3、3-叔丁基-9,10-二(2-萘)蒽(TBADN)。\n\n[0095]发光层18的材料也可以是无机材料，比如可以是选自IV族半导体纳米晶、II-V族半导体纳米晶、II-VI族半导体纳米晶、IV-VI族半导体纳米晶、III-V族半导体纳米晶和III-VI族半导体纳米晶等中的一种或多种。作为举例，可以为硅量子点、锗量子点、硫化镉量子点、硒化镉量子点、碲化镉量子点、硒化锌量子点、硫化铅量子点、硒化铅量子点、磷化铟量子点、砷化铟量子点和氮化镓量子点等中的一种或多种。\n\n[0096]可选的，第四电极19可以是氧化铟锡、氧化铟锌等氧化物。\n\n[0097]本申请的实施例采用LED混合电致发光的发光结构；相较于Mini-LED面板，本实施例避免了巨量转移的步骤，简化了工艺；相较于纯电致发光面板，本实施例具有更高的使用寿命。\n\n[0098]在现有技术中，由于蓝色量子点电致发光的寿命远低于红绿量子点，从而使得电致发光面板随着蓝色量子点发光的衰减而出现色偏，进而导致显示失效。\n\n[0099]故，本申请的实施例，可选的，LED15可以为发蓝光的LED；发光层18可以包括红色发光层181和绿色发光层182；由于LED的发光性能好于蓝色量子点，因此采用红色量子点、绿色量子点作为发光层18，采用发蓝光的LED15替换蓝色量子点，则可达到性能、寿命相匹配，从而提高了面板100的整体寿命及品味。\n\n[0100]本实施例的面板100还可以包括封装层20，封装层20设置在像素定义层14、发光层18和绝缘材料17上。\n\n[0101]请参照图5，本申请实施例提供一种面板200，其包括基板21、薄膜晶体管层22、第一导电层23、像素定义层24、至少一个LED(Light-Emitting Diode，发光二极管)25和第二导电层26。\n\n[0102]薄膜晶体管层22设置在基板21上。薄膜晶体管层22包括多个薄膜晶体管TFT。\n\n[0103]第一导电层23设置在薄膜晶体管层22上。第一导电层23包括彼此分离的第一电极231和第二电极232。第一电极231电连接于薄膜晶体管TFT。\n\n[0104]像素定义层24设置在第一导电层23上。像素定义层24开设有开口241。\n\n[0105]LED25设置在开口241内。LED25包括相对设置的第一端部251和第二端部252，如图6所示。第一端部251设置在第一电极231上，第二端部252设置在第二电极232上。\n\n[0106]第二导电层26设置在LED25上。第二导电层26包括第一导电部261和第二导电部262，第一导电部261电连接于第一端部251和第一电极231。第二导电部262电连接于第二端部252和第二电极232。\n\n[0107]本申请实施例采用在薄膜晶体管层22上设置LED25的结构替换了现有技术中Mini-LED面板和Micro-LED面板，达到简化工艺的效果；另外上述的结构相较于单纯的电致发光显示面板具有更长的使用寿命。\n\n[0108]可选的，基板21可为硬性基板或者柔性衬底。基板21的材质包括玻璃、蓝宝石、硅、二氧化硅、聚乙烯、聚丙烯、聚苯乙烯、聚乳酸、聚对苯二甲酸乙二醇酯、聚酰亚胺或聚氨酯中的一种\n\n[0109]可选的，薄膜晶体管TFT可以是顶栅型薄膜晶体管或底栅型薄膜晶体管。薄膜晶体管TFT可以是P型薄膜晶体管或N型薄膜晶体管。\n\n[0110]本申请的实施例以薄膜晶体管TFT为N型的顶栅薄膜晶体管为例进行阐述，但不限于此。\n\n[0111]可选的，薄膜晶体管层22包括依次设置在基板21上的有源层221、栅极绝缘层222、第一金属层223、层间介电层224、第二金属层225、第一平坦层226和第二平坦层227。\n\n[0112]其中，第一金属层223包括栅极。第二金属层225包括源极、漏极和公共线22c。\n\n[0113]漏极连接于第一电极231。公共线22c连接于第二电极232。\n\n[0114]有源层221、栅极、源极和漏极形成薄膜晶体管TFT。\n\n[0115]可选的，第一金属层223和第二金属层225的材料可以使用纯金属或合金，比如金、银、钨、钼、铁、铝、铝-硅、铝-钛等材料。\n\n[0116]可选的，栅极绝缘层222的材料可包括氮化硅、氧化硅以及有机光阻中的至少一种。\n\n[0117]可选的，第一平坦层226和第二平坦层227的材料可以是有机透明膜层，比如透明光刻胶，环氧树脂、聚酰亚胺、聚乙烯醇、聚甲基丙烯酸甲酯、聚苯乙烯等。\n\n[0118]可选的，第一导电层23和第二导电层26的材料可以是氧化铟锡、氧化铟锌等氧化物；还可以为各种导电特性的金属、合金以及化合物及其混合物，例如可以使用金、银或铂等等。\n\n[0119]在本实施例中，可选的，像素定义层24分别覆盖第一导电部261的部分和第二导电部262的部分。\n\n[0120]可选的，至少一个LED25包括纳米LED。\n\n[0121]可选的，LED25的长度为2-5微米，比如可以是2微米、3微米、4微米或5微米；宽度为100-500纳米，比如可以是100纳米、200纳米、300纳米、400纳米或500纳米；LED15呈棒状结构，但不限于此。\n\n[0122]可选的，请参照图3，LED25还包括半导体层253。半导体层253连接在第一端部251和第二端部252之间。第一端部251为P型半导体和N型半导体中的一者，第二端部252为P型半导体和N型半导体中的另一者。\n\n[0123]可选的，第一导电部261和第二导电部262均未连接半导体层253，避免发生短路。\n\n[0124]请参照图4，LED25还可以包括保护层254。保护层254覆盖半导体层253，且至多覆盖第一端部251的部分和至多覆盖第二端部252的部分。也即，LED25至少裸露出第一端部251的部分，以及至少裸露第二端部252的部分。\n\n[0125]本申请的实施例中，面板200还可以包括固定部27，固定部27设置在开口241内，且固定连接于LED25、第一电极231和第二电极232。\n\n[0126]固定部27将LED25固定在薄膜晶体管层22上。\n\n[0127]可选的，固定部27包括固定性质的材料和用于阻挡刻蚀的材料。其中，固定性质的材料用于固定连接薄膜晶体管层22和LED25，固定性质的材料可以是如聚甲基丙烯酸甲酯(PMMA)或丙烯酸丁酯(BA)。阻挡刻蚀的材料用于避免被蚀刻，其材料可以是氧化硅纳米颗粒。\n\n[0128]可选的，可参照图6，面板200还可以包括光转换层28。光转换层28设置在开口241内，且覆盖LED25。\n\n[0129]其中，光转换层28包括红色转换单元、绿色转换单元和蓝色转换单元。LED25可以发射蓝光或紫光。LED25发出的光激发光转换层28的材料，从而发出相应的颜色光。\n\n[0130]可选的，光转换层28的材料可以是量子点。红色转换单元的材料为红色量子点，绿色转换单元的单元为绿色量子点，蓝色转换单元的材料为蓝色量子点。\n\n[0131]在一些实施例中，光转换层28也可以包括红色转换单元、绿色转换单元和透光材料单元。LED25可以发射蓝光。\n\n[0132]本申请的实施例的面板200采用纳米级LED25作为发光单元，红绿像素采用量子点或其他色彩转换材料进行色彩转换，最终形成红绿蓝全彩显示面板，LED25均为蓝光纳米LED，各像素寿命性能一致，提升显示品味和寿命；同时相较于Mini LED面板，本实施例的面板200避免了巨量转移的步骤，简化了工艺步骤。\n\n[0133]本申请实施例的面板200还包括封装层29，封装层29覆盖像素定义层24和光转换层28。\n\n[0134]请参照图7，相应的，本申请实施例还涉及一种面板的第一种制备方法，其包括以下步骤：\n\n[0135]步骤S11：在基板上形成薄膜晶体管层；\n\n[0136]步骤S12：在所述薄膜晶体管层上形成图案化的第一导电层，所述第一导电层包括彼此分离的第一电极和第二电极；\n\n[0137]步骤S13：在所述第一导电层上放置至少一个LED，并对准所述第一电极和所述LED的第一端部以及对准所述第二电极和所述LED的第二端部，所述第一端部和所述第二端部相对设置；\n\n[0138]步骤S14：在所述LED上形成图案化的第二导电层，所述第二导电层包括第一导电部和第二导电部，所述第一导电部电连接于所述第一端部和所述第一电极，所述第二导电部电连接于所述第二端部和所述第二电极。\n\n[0139]本申请实施例的面板的制备方法采用在薄膜晶体管层上设置LED的结构替换了现有技术中Mini-LED面板和Micro-LED面板，避免了巨量转移的步骤，达到简化工艺的效果；另外上述的结构相较于单纯的电致发光显示面板具有更长的使用寿命。\n\n[0140]请参照图8-图10，相应的，本申请实施例还涉及一种面板的第二种制备方法，其包括以下步骤：\n\n[0141]步骤B101：在所述基板11上形成薄膜晶体管层12；\n\n[0142]步骤B102：在所述薄膜晶体管层12上形成图案化的第一导电层13，所述第一导电层13包括相互分离的第一电极131、第二电极132和第三电极133；\n\n[0143]步骤B103：在所述第一导电层13上形成图案化的像素定义层14和开口141，所述开口141包括第一开口14a和第二开口14b，所述第一开口14a裸露所述第一电极131和所述第二电极132，所述第二开口14b裸露所述第三电极133；\n\n[0144]步骤B104：在所述第一导电层13上放置至少一个LED15，并对准所述第一电极131和所述LED15的第一端部151以及对准所述第二电极132和所述LED15的第二端部152，所述第一端部151和所述第二端部152相对设置；\n\n[0145]步骤B105：在所述LED15上形成图案化的第二导电层16，所述第二导电层16包括第一导电部161和第二导电部162，所述第一导电部161电连接于所述第一端部151和所述第一电极131，所述第二导电部162电连接于所述第二端部152和所述第二电极132。\n\n[0146]步骤B106：在所述第一开口14a内填充绝缘材料17，使所述绝缘材料17覆盖所述LED15、所述第二导电部162的部分以及所述第一导电部161，所述第二导电部162的部分裸露；\n\n[0147]步骤B107：在所述第二开口14b内形成发光层18；\n\n[0148]步骤B108：依次在所述像素定义层14、所述发光层18和所述绝缘材料17上形成第四电极19和封装层20，所述第四电极19连接于所述第二导电部162。\n\n[0149]下文对本申请的面板的制备方法的第二种流程图进行阐述。其中需要说明的是，本实施例的制备方法用于制备上述实施例的面板100。\n\n[0150]请参照图9，步骤B101，在所述基板11上形成薄膜晶体管层12。其中基板11和薄膜晶体管层12的具体结构请参照上述实施例的面板100的相关内容，此处不再赘述。\n\n[0151]可选的，薄膜晶体管层12可以是氧化物薄膜晶体管层，低温多晶硅薄膜晶体管层或有机类薄膜晶体管层等。随后转入步骤B102。\n\n[0152]步骤B102：在所述薄膜晶体管层12上形成图案化的第一导电层13，所述第一导电层13包括相互分离的第一电极131、第二电极132和第三电极133。\n\n[0153]其中图案化的第一导电层13的具体结构请参照上述实施例的面板100的相关内容，此处不再赘述。随后转入步骤B103。\n\n[0154]步骤B103：在所述第一导电层13上形成图案化的像素定义层14和开口141。所述开口141包括第一开口14a和第二开口14b，所述第一开口14a裸露所述第一电极131和所述第二电极132，所述第二开口14b裸露所述第三电极133。\n\n[0155]可选的，像素定义层14的材料可以是有机光阻材料。随后转入步骤B104。\n\n[0156]步骤B104：在所述第一导电层13上放置至少一个LED15，并对准所述第一电极131和所述LED15的第一端部151以及对准所述第二电极132和所述LED15的第二端部152。所述第一端部151和所述第二端部152相对设置。\n\n[0157]可选的，LED15可以为纳米LED。\n\n[0158]可选的，采用打印或微流体传送的方式把LED15输送到第一开口14a中。随后采用电场力、磁场力、表面张力等配向技术，使得LED15的端部分别与第一电极131和第二电极132一一对应；之后采用干燥的方式去除打印或流体传送带来的溶剂。随后转入步骤B105。\n\n[0159]请参照图10，步骤B105：在所述LED15上形成图案化的第二导电层16。所述第二导电层16包括第一导电部161和第二导电部162，所述第一导电部161电连接于所述第一端部151和所述第一电极131，所述第二导电部162电连接于所述第二端部152和所述第二电极132。\n\n[0160]可选的，采用喷墨打印或蒸镀的方式在LED15上形成导电材料层，随后可采用光刻或其他的方式形成图案化的第二导电层16，并使得第一端部151和第二端部152一一对应的与第一电极131和第二电极132连接。随后转入步骤B106。\n\n[0161]步骤B106：在所述第一开口14a内填充绝缘材料17，使所述绝缘材料17覆盖所述LED15、所述第二导电部162的部分以及所述第一导电部161，所述第二导电部162的部分裸露。\n\n[0162]可选的，绝缘材料17具有良好的封装性。随后转入步骤B107。\n\n[0163]步骤B107：在所述第二开口14b内形成发光层18。\n\n[0164]可选的，发光层18的材料可以是有机材料或无机材料。\n\n[0165]可选的，LED15可以为发蓝光的LED；发光层18可以包括红色发光层181和绿色发光层182；由于LED的发光性能好于蓝色量子点，因此采用红色量子点、绿色量子点作为发光层18，采用发蓝光的LED15替换蓝色量子点，则可达到性能、寿命相匹配，从而提高了面板100的整体寿命及品味。\n\n[0166]随后转入步骤B108。\n\n[0167]步骤B108：依次在所述像素定义层14、所述发光层18和所述绝缘材料17上形成第四电极19和封装层20，所述第四电极19连接于所述第二导电部162。\n\n[0168]这样便完成了本申请实施例的面板的制备方法的第二种方法。\n\n[0169]请参照图11-图13，本申请实施例的面板的第三种制备方法，其包括以下步骤：\n\n[0170]步骤B201：在基板21上形成薄膜晶体管层22；\n\n[0171]步骤B202：在所述薄膜晶体管层22上形成图案化的第一导电层23，所述第一导电层23包括彼此分离的第一电极231和第二电极232；\n\n[0172]步骤B203：在所述第一导电层23上形成图案化的牺牲层XS和第一开口XS1，所述第一开口XS1裸露所述第一电极231和所述第二电极232。\n\n[0173]步骤B204：在所述第一导电层23上放置至少一个LED25，并对准所述第一电极231和所述LED25的第一端部251以及对准所述第二电极232和所述LED25的第二端部252。所述第一端部251和所述第二端部252相对设置。\n\n[0174]步骤B205：去除所述牺牲层XS；\n\n[0175]步骤B206：在所述薄膜晶体管层22上形成图案化的光阻层GZ，以所述光阻层GZ为掩模，蚀刻掉所述LED25和所述第一导电层23上裸露的材料。所述光阻层GZ上开设有第二开口GZ1和第三开口GZ2，所述第二开口GZ1对应于所述第一电极231和所述LED的第一端部，所述第三开口ZG2对应于所述第二电极232和所述LED25的第二端部252。\n\n[0176]步骤B207：在所述LED25上形成图案化的第二导电层26，所述第二导电层26包括第一导电部261和第二导电部262，所述第一导电部261电连接于所述第一端部251和所述第一电极231，所述第二导电部262电连接于所述第二端部252和所述第二电极232。\n\n[0177]步骤B208：在所述第二导电层26上形成像素定义层24，所述像素定义层24上开设有第四开口241，所述第四开口241裸露所述LED25；\n\n[0178]步骤B209：在所述第四开口241内形成光转换层28，之后在所述光转换层28上形成封装层29。\n\n[0179]下文对上述实施例的面板的制备方法进行阐述。需要说明的是，本申请实施例的面板的第三种制备方法用于制备上述实施例的面板200。\n\n[0180]请参照图12，步骤B201：在基板21上形成薄膜晶体管层22。\n\n[0181]其中基板21和薄膜晶体管层22的具体结构请参照上述实施例的面板200的相关内容，此处不再赘述。\n\n[0182]可选的，薄膜晶体管层22可以是氧化物薄膜晶体管层，低温多晶硅薄膜晶体管层或有机类薄膜晶体管层等。随后转入步骤B202。\n\n[0183]步骤B202：在所述薄膜晶体管层22上形成图案化的第一导电层23，所述第一导电层23包括彼此分离的第一电极231和第二电极232。\n\n[0184]其中图案化的第一导电层23的具体结构请参照上述实施例的面板200的相关内容，此处不再赘述。随后转入步骤B203。\n\n[0185]步骤B203：在所述第一导电层23上形成图案化的牺牲层XS和第一开口XS1，所述第一开口XS1裸露所述第一电极231和所述第二电极232。\n\n[0186]可选的，牺牲层XS的材料可以是有机光阻材料。随后转入步骤204。\n\n[0187]步骤B204：在所述第一导电层23上放置至少一个LED25，并对准所述第一电极231和所述LED25的第一端部251以及对准所述第二电极232和所述LED25的第二端部252。所述第一端部251和所述第二端部252相对设置。\n\n[0188]可选的，步骤204包括：\n\n[0189]在所述第一开口XS1内放置LED溶液RY，所述LED溶液RY覆盖所述第一导电层23，所述LED溶液RY包括所述LED25、溶剂、固定性质的材料和用于阻挡刻蚀的材料；\n\n[0190]对准所述第一电极231和所述LED25的第一端部251以及对准所述第二电极232和所述LED的第二端部252；\n\n[0191]干燥所述LED溶液RY，去除所述溶剂，固定性质的材料和用于阻挡刻蚀的材料形成固定部27，以使所述LED25通过所述固定性质的材料固定在所述薄膜晶体管层上。\n\n[0192]可选的，采用打印或微流体传送的方式把LED溶液RY输送到第一开口XS1中。随后采用电场力、磁场力、表面张力等配向技术，使得LED25的端部分别与第一电极231和第二电极232一一对应；之后采用干燥的方式去除打印或流体传送带来的溶剂。随后转入步骤205。\n\n[0193]步骤B205：去除所述牺牲层XS；随后转入步骤B206。\n\n[0194]请参照图13，步骤B206：在所述薄膜晶体管层22上形成图案化的光阻层GZ，以所述光阻层GZ为掩模，蚀刻掉所述LED25和所述第一导电层23上裸露的材料。所述光阻层GZ上开设有第二开口GZ1和第三开口GZ2，所述第二开口GZ1对应于所述第一电极231和所述LED的第一端部，所述第三开口ZG2对应于所述第二电极232和所述LED25的第二端部252。\n\n[0195]在蚀刻后，裸露出所述第一电极、所述第二电极、所述LED的第一端部和所述LED的第二端部。随后转入步骤B207。\n\n[0196]步骤B207：在所述LED25上形成图案化的第二导电层26，所述第二导电层26包括第一导电部261和第二导电部262，所述第一导电部261电连接于所述第一端部251和所述第一电极231，所述第二导电部262电连接于所述第二端部252和所述第二电极232。\n\n[0197]可选的，所述光阻层GZ具有底切结构GZ2。可选的，底切结构GZ2为具有倒角的镂空结构。\n\n[0198]步骤B207：包括：\n\n[0199]所述光阻层GZ上形成导电材料层，所述导电材料层覆盖所述第一电极231和所述LED25的第一端部251，以及覆盖所述第二电极232和所述LED25的第二端部252；\n\n[0200]去除所述光阻层GZ，形成图案化的所述第二导电层26，使所述第一导电部261电连接于所述第一端部251和所述第一电极231，所述第二导电部262电连接于所述第二端部252和所述第二电极232。\n\n[0201]由于光阻层GZ具有底切结构GZ2，使得到导电材料层在成膜时与底切结构GZ2处发光断裂，因此可以直接剥离光阻层GZ，进而剥离光阻层GZ上的导电材料层，形成图案化的第二导电层26，节省了光罩。\n\n[0202]随后转入步骤B208。\n\n[0203]步骤B208：在所述第二导电层26上形成像素定义层24，所述像素定义层24上开设有第四开口241，所述第四开口241裸露所述LED25。像素定义层24分别覆盖第一导电部261的部分和第二导电部262的部分。\n\n[0204]其中第四开口241为面板200的开口241。随后转入步骤B209。\n\n[0205]步骤B209：在所述第四开口241内形成光转换层28，之后在所述光转换层28上形成封装层29。\n\n[0206]其中，光转换层28包括红色转换单元、绿色转换单元和蓝色转换单元。LED25可以发射蓝光或紫光。LED25发出的光激发光转换层28的材料，从而发出相应的颜色光。\n\n[0207]可选的，光转换层28的材料可以是量子点。红色转换单元的材料为红色量子点，绿色转换单元的单元为绿色量子点，蓝色转换单元的材料为蓝色量子点。\n\n[0208]在一些实施例中，光转换层28也可以包括红色转换单元、绿色转换单元和透光材料单元。LED25可以发射蓝光。\n\n[0209]这样便完成了本申请实施例的面板的第三制备方法的步骤。\n\n[0210]以上对本申请实施例所提供的一种面板及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种面板及其制备方法。\n\n背景技术\n\n[0002]在对现有技术的研究和实践过程中，本申请的发明人发现，Mini LED(次毫米发光二极管)、Micro LED(微型发光二极管)制作工艺较为复杂，且目前Micro LED巨量转移的成熟度低、可靠性较低、高成本，大尺寸难度极大，对其未来发展潜在负面影响。\n\n[0003]而电致发光显示面板中发光层的材料一般为有机材料或量子点材料，上述材料的发光寿命相对较短，特别是发蓝色光的材料，因此需提供一种新型显示技术的显示面板以降低工艺难度和提高显示面板的使用寿命。\n\n发明内容\n\n[0004]本申请实施例提供一种面板，可以提高显示面板的使用寿命和简化工艺。\n\n[0005]本申请实施例提供一种面板，其包括：\n\n[0006]基板；\n\n[0007]薄膜晶体管层，所述薄膜晶体管层设置在所述基板上，所述薄膜晶体管层包括多个薄膜晶体管；\n\n[0008]第一导电层，所述第一导电层设置在所述薄膜晶体管层上，所述第一导电层包括彼此分离的第一电极和第二电极，所述第一电极电连接于所述薄膜晶体管；\n\n[0009]像素定义层，所述像素定义层设置在所述第一导电层上，所述像素定义层开设有开口；\n\n[0010]至少一个LED，所述LED设置在所述开口内，所述LED包括相对设置的第一端部和第二端部，所述第一端部设置在所述第一电极上，所述第二端部设置在所述第二电极上；\n\n[0011]第二导电层，所述第二导电层设置在所述LED上，所述第二导电层包括第一导电部和第二导电部，所述第一导电部电连接于所述第一端部和所述第一电极，所述第二导电部电连接于所述第二端部和所述第二电极。\n\n[0012]可选的，在本申请的一些实施例中，所述面板还包括绝缘材料，所述开口包括第一开口，所述LED设置在所述第一开口内，所述绝缘材料设置在所述第一开口内，且覆盖所述LED、所述第二导电部的部分以及所述第一导电部。\n\n[0013]可选的，在本申请的一些实施例中，所述第一导电层还包括第三电极；所述开口还包括第二开口，所述第二开口裸露所述第三电极；\n\n[0014]所述面板还包括发光层和第四电极，所述发光层设置在所述第二开口内；所述第四电极覆盖在所述像素定义层、所述发光层和所述绝缘材料上；所述第四电极连接于所述第二导电部。\n\n[0015]可选的，在本申请的一些实施例中，所述LED为发蓝光的LED；所述发光层包括红色发光层和绿色发光层。\n\n[0016]可选的，在本申请的一些实施例中，多个所述薄膜晶体管包括第一薄膜晶体管和第二薄膜晶体管，所述薄膜晶体管层还包括公共线，所述第一薄膜晶体管电连接于所述第一电极，所述公共线电连接于所述第二电极，所述第二薄膜晶体管电连接于所述第三电极。\n\n[0017]可选的，在本申请的一些实施例中，所述面板还包括固定部，所述固定部设置在所述开口内，且固定连接于所述LED、所述第一电极和第二电极。\n\n[0018]可选的，在本申请的一些实施例中，所述固定部包括固定性质的材料和用于阻挡刻蚀的材料。\n\n[0019]可选的，在本申请的一些实施例中，所述面板还包括光转换层，所述光转换层设置在所述开口内，且覆盖所述LED。\n\n[0020]可选的，在本申请的一些实施例中，所述LED还包括半导体层和保护层；所述半导体层连接在所述第一端部和所述第二端部之间；所述保护层覆盖所述半导体层，且至多覆盖所述第一端部的部分和至多覆盖所述第二端部的部分。\n\n[0021]可选的，在本申请的一些实施例中，所述像素定义层分别覆盖所述第一导电部的部分和所述第二导电部的部分。\n\n[0022]可选的，在本申请的一些实施例中，至少一个所述LED包括纳米LED。\n\n[0023]相应的，本申请实施例还涉及一种面板的制备方法，其包括以下步骤：\n\n[0024]在基板上形成薄膜晶体管层；\n\n[0025]在所述薄膜晶体管层上形成图案化的第一导电层，所述第一导电层包括彼此分离的第一电极和第二电极；\n\n[0026]在所述第一导电层上放置至少一个LED，并对准所述第一电极和所述LED的第一端部以及对准所述第二电极和所述LED的第二端部，所述第一端部和所述第二端部相对设置；\n\n[0027]在所述LED上形成图案化的第二导电层，所述第二导电层包括第一导电部和第二导电部，所述第一导电部电连接于所述第一端部和所述第一电极，所述第二导电部电连接于所述第二端部和所述第二电极。\n\n[0028]可选的，在本申请的一些实施例中，所述第一导电层还包括第三电极，在所述第一导电层上放置至少一个LED的步骤之前，所述制备方法还包括以下步骤：\n\n[0029]在所述第一导电层上形成图案化的像素定义层和开口，所述开口包括第一开口和第二开口，所述第一开口裸露所述第一电极和所述第二电极，所述第二开口裸露所述第三电极；\n\n[0030]在所述LED上形成图案化的第二导电层的步骤之后，所述制备方法还包括以下步骤：\n\n[0031]在所述第一开口内填充绝缘材料，使所述绝缘材料覆盖所述LED、所述第二导电部的部分以及所述第一导电部，所述第二导电部的部分裸露；\n\n[0032]在所述第二开口内形成发光层；\n\n[0033]依次在所述像素定义层、所述发光层和所述绝缘材料上形成第四电极和封装层，所述第四电极连接于所述第二导电部。\n\n[0034]可选的，在本申请的一些实施例中，在所述第一导电层上放置至少一个LED的步骤之前，所述制备方法还包括以下步骤：\n\n[0035]在所述第一导电层上形成图案化的牺牲层和第一开口，所述第一开口裸露所述第一电极和所述第二电极；\n\n[0036]在所述第一导电层上放置至少一个LED，并对准所述第一电极和所述LED的第一端部以及对准所述第二电极和所述LED的第二端部的步骤，包括：\n\n[0037]在所述第一开口内放置LED溶液，所述LED溶液覆盖所述第一导电层，所述LED溶液包括所述LED、溶剂、固定性质的材料和用于阻挡刻蚀的材料；\n\n[0038]对准所述第一电极和所述LED的第一端部以及对准所述第二电极和所述LED的第二端部；\n\n[0039]干燥所述LED溶液，去除所述溶剂，以使所述LED通过所述固定性质的材料固定在所述薄膜晶体管层上。\n\n[0040]可选的，在本申请的一些实施例中，在干燥所述LED溶液的步骤之后，所述制备方法还包括以下步骤：\n\n[0041]去除所述牺牲层；\n\n[0042]在所述薄膜晶体管层上形成图案化的光阻层，以所述光阻层为掩模，蚀刻掉所述LED和所述第一导电层上裸露的材料。所述光阻层上开设有第二开口和第三开口，所述第三开口对应于所述第一电极和所述LED的第一端部，所述第三开口对应于所述第二电极和所述LED的第二端部。\n\n[0043]可选的，在本申请的一些实施例中，所述光阻层具有底切结构，在所述LED上形成图案化的第二导电层的步骤包括：\n\n[0044]所述光阻层上形成导电材料层，所述导电材料层覆盖所述第一电极和所述LED的第一端部，以及覆盖所述第二电极和所述LED的第二端部；\n\n[0045]去除所述光阻层，形成图案化的所述第二导电层，使所述第一导电部电连接于所述第一端部和所述第一电极，所述第二导电部电连接于所述第二端部和所述第二电极。\n\n[0046]可选的，在本申请的一些实施例中，在去除所述光阻层的步骤之后，所述制备方案还包括以下步骤：\n\n[0047]在所述第二导电层上形成像素定义层，所述像素定义层上开设有第四开口，所述第四开口裸露所述LED；\n\n[0048]在所述第四开口内形成光转换层，之后在所述光转换层上形成封装层。\n\n[0049]本申请实施例采用在薄膜晶体管层上依次设置第一导电层、像素定义层、至少一个LED和第二导电层，第一导电层包括彼此分离的第一电极和第二电极，第一电极电连接于薄膜晶体管；像素定义层开设有开口；LED设置在开口内，LED包括相对设置的第一端部和第二端部，第一端部设置在第一电极上，第二端部设置在第二电极上；第二导电层包括第一导电部和第二导电部，第一导电部电连接于第一端部和第一电极，第二导电部电连接于第二端部和第二电极。本实施例采用不同于Mini-LED面板和Micro-LED面板中LED芯片的LED的结构替换LED芯片，达到简化工艺的效果；另外采用LED发光的结构相较于单纯的电致发光显示面板具有更长的使用寿命。\n\n附图说明\n\n[0050]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0051]图1是本申请实施例提供的面板的第一种结构示意图；\n\n[0052]图2为本申请实施例的提供的面板的第一种结构部分的俯视图；\n\n[0053]图3是本申请实施例提供的面板的LED的第一结构示意图；\n\n[0054]图4是本申请实施例提供的面板的LED的第二结构示意图；\n\n[0055]图5是本申请实施例提供的面板的第二种结构示意图；\n\n[0056]图6是本申请实施例提供的面板的第二种结构部分的俯视图；\n\n[0057]图7是本申请实施例提供的面板的制备方法的第一种方法流程图；\n\n[0058]图8是本申请实施例提供的面板的制备方法的第二种方法流程图；\n\n[0059]图9是本申请实施例提供的面板的制备方法的第二种方法流程图中步骤B101-步骤B104的示意图；\n\n[0060]图10是本申请实施例提供的面板的制备方法的第二种方法流程图中步骤B105-步骤B108的示意图；\n\n[0061]图11是本申请实施例提供的面板的制备方法的第三种方法流程图；\n\n[0062]图12是本申请实施例提供的面板的制备方法的第三种方法流程图中步骤B201-步骤B205的示意图；\n\n[0063]图13是本申请实施例提供的面板的制备方法的第三种方法流程图中步骤B206-步骤B209的示意图。\n\n具体实施方式\n\n[0064]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0065]本申请实施例提供一种面板及其制备方法，下文进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0066]请参照图1和图2，本申请实施例提供一种面板100，其包括基板11、薄膜晶体管层12、第一导电层13、像素定义层14、至少一个LED(Light-Emitting Diode，发光二极管)15和第二导电层16。\n\n[0067]薄膜晶体管层12设置在基板11上。薄膜晶体管层12包括多个薄膜晶体管TFT。\n\n[0068]第一导电层13设置在薄膜晶体管层12上。第一导电层13包括彼此分离的第一电极131和第二电极132。第一电极131电连接于薄膜晶体管TFT。\n\n[0069]像素定义层14设置在第一导电层13上。像素定义层14开设有开口141。\n\n[0070]LED15设置在开口141内。LED15包括相对设置的第一端部151和第二端部152，如图3或图4所示。第一端部151设置在第一电极131上，第二端部152设置在第二电极132上。\n\n[0071]第二导电层16设置在LED15上。第二导电层16包括第一导电部161和第二导电部162，第一导电部161电连接于第一端部151和第一电极131。第二导电部162电连接于第二端部152和第二电极132。\n\n[0072]本申请实施例采用在薄膜晶体管层12上设置LED15的结构替换了现有技术中Mini-LED面板和Micro-LED面板，达到简化工艺的效果；另外上述的结构相较于单纯的电致发光显示面板具有更长的使用寿命。\n\n[0073]可选的，基板11可为硬性基板或者柔性衬底。基板11的材质包括玻璃、蓝宝石、硅、二氧化硅、聚乙烯、聚丙烯、聚苯乙烯、聚乳酸、聚对苯二甲酸乙二醇酯、聚酰亚胺或聚氨酯中的一种\n\n[0074]可选的，薄膜晶体管TFT可以是顶栅型薄膜晶体管或底栅型薄膜晶体管。薄膜晶体管TFT可以是P型薄膜晶体管或N型薄膜晶体管。\n\n[0075]本申请的实施例以薄膜晶体管TFT为N型的顶栅薄膜晶体管为例进行阐述，但不限于此。\n\n[0076]可选的，薄膜晶体管层12包括依次设置在基板11上的有源层121、栅极绝缘层122、第一金属层123、层间介电层124、第二金属层125、第一平坦层126和第二平坦层127。\n\n[0077]其中，第一金属层123包括栅极。第二金属层125包括源极、漏极和公共线12c。\n\n[0078]漏极连接于第一电极131。公共线12c连接于第二电极132。\n\n[0079]有源层121、栅极、源极和漏极形成薄膜晶体管TFT。\n\n[0080]可选的，第一金属层123和第二金属层125的材料可以使用纯金属或合金，比如金、银、钨、钼、铁、铝、铝-硅、铝-钛等材料。\n\n[0081]可选的，栅极绝缘层122的材料可包括氮化硅、氧化硅以及有机光阻中的至少一种。\n\n[0082]可选的，第一平坦层126和第二平坦层127的材料可以是有机透明膜层，比如透明光刻胶，环氧树脂、聚酰亚胺、聚乙烯醇、聚甲基丙烯酸甲酯、聚苯乙烯等。\n\n[0083]可选的，第一导电层13和第二导电层16的材料可以是氧化铟锡、氧化铟锌等氧化物；还可以为各种导电特性的金属、合金以及化合物及其混合物，例如可以使用金、银或铂等等。\n\n[0084]可选的，至少一个LED15包括纳米LED。\n\n[0085]可选的，LED15的长度为2-5微米，比如可以是2微米、3微米、4微米或5微米；宽度为100-500纳米，比如可以是100纳米、200纳米、300纳米、400纳米或500纳米；LED15呈棒状结构，但不限于此。\n\n[0086]可选的，请参照图3，LED15还包括半导体层153。半导体层153连接在第一端部151和第二端部152之间。第一端部151为P型半导体和N型半导体中的一者，第二端部152为P型半导体和N型半导体中的另一者。\n\n[0087]可选的，第一导电部161和第二导电部162均未连接半导体层153，避免发生短路。\n\n[0088]请参照图4，LED15还可以包括保护层154。保护层154覆盖半导体层153，且至多覆盖第一端部151的部分和至多覆盖第二端部152的部分。也即，LED15至少裸露出第一端部151的部分，以及至少裸露第二端部152的部分。\n\n[0089]可选的，在本申请的实施例中，面板100还可以包括绝缘材料17。开口141包括第一开口14a，LED15设置在所述第一开口14a内。绝缘材料17设置在第一开口14a内，且覆盖LED15、第二导电部162的部分以及第一导电部161。\n\n[0090]本实施例采用绝缘材料17对LED15进行封装，使得LED15与薄膜晶体管TFT连接的第一端部151被绝缘材料覆盖，另一边的第二端部152至少部分裸露。\n\n[0091]在本申请的实施例中，第一导电层13还包括第三电极133。开口141还包括第二开口14b。第二开口14b裸露第三电极133。\n\n[0092]面板100还包括发光层18和第四电极19。发光层18设置在第二开口14b内。第四电极19覆盖在像素定义层14、发光层18和绝缘材料17上。第四电极19连接于第二导电部162。\n\n[0093]本实施例中，多个所述薄膜晶体管TFT还可以包括第一薄膜晶体管TFT1和第二薄膜晶体管TFT2，第一薄膜晶体管TFT1电连接于所述第一电极131，所述第二薄膜晶体管TFT2电连接于所述第三电极133。\n\n[0094]可选的，发光层18的材料可以是有机材料，比如可以是Alq3、双(2-甲基-8-羟基喹啉-N1,O8)-(1,1\'-联苯-4-羟基)铝(BAlq)、DPVBi、Almq3、3-叔丁基-9,10-二(2-萘)蒽(TBADN)。\n\n[0095]发光层18的材料也可以是无机材料，比如可以是选自IV族半导体纳米晶、II-V族半导体纳米晶、II-VI族半导体纳米晶、IV-VI族半导体纳米晶、III-V族半导体纳米晶和III-VI族半导体纳米晶等中的一种或多种。作为举例，可以为硅量子点、锗量子点、硫化镉量子点、硒化镉量子点、碲化镉量子点、硒化锌量子点、硫化铅量子点、硒化铅量子点、磷化铟量子点、砷化铟量子点和氮化镓量子点等中的一种或多种。\n\n[0096]可选的，第四电极19可以是氧化铟锡、氧化铟锌等氧化物。\n\n[0097]本申请的实施例采用LED混合电致发光的发光结构；相较于Mini-LED面板，本实施例避免了巨量转移的步骤，简化了工艺；相较于纯电致发光面板，本实施例具有更高的使用寿命。\n\n[0098]在现有技术中，由于蓝色量子点电致发光的寿命远低于红绿量子点，从而使得电致发光面板随着蓝色量子点发光的衰减而出现色偏，进而导致显示失效。\n\n[0099]故，本申请的实施例，可选的，LED15可以为发蓝光的LED；发光层18可以包括红色发光层181和绿色发光层182；由于LED的发光性能好于蓝色量子点，因此采用红色量子点、绿色量子点作为发光层18，采用发蓝光的LED15替换蓝色量子点，则可达到性能、寿命相匹配，从而提高了面板100的整体寿命及品味。\n\n[0100]本实施例的面板100还可以包括封装层20，封装层20设置在像素定义层14、发光层18和绝缘材料17上。\n\n[0101]请参照图5，本申请实施例提供一种面板200，其包括基板21、薄膜晶体管层22、第一导电层23、像素定义层24、至少一个LED(Light-Emitting Diode，发光二极管)25和第二导电层26。\n\n[0102]薄膜晶体管层22设置在基板21上。薄膜晶体管层22包括多个薄膜晶体管TFT。\n\n[0103]第一导电层23设置在薄膜晶体管层22上。第一导电层23包括彼此分离的第一电极231和第二电极232。第一电极231电连接于薄膜晶体管TFT。\n\n[0104]像素定义层24设置在第一导电层23上。像素定义层24开设有开口241。\n\n[0105]LED25设置在开口241内。LED25包括相对设置的第一端部251和第二端部252，如图6所示。第一端部251设置在第一电极231上，第二端部252设置在第二电极232上。\n\n[0106]第二导电层26设置在LED25上。第二导电层26包括第一导电部261和第二导电部262，第一导电部261电连接于第一端部251和第一电极231。第二导电部262电连接于第二端部252和第二电极232。\n\n[0107]本申请实施例采用在薄膜晶体管层22上设置LED25的结构替换了现有技术中Mini-LED面板和Micro-LED面板，达到简化工艺的效果；另外上述的结构相较于单纯的电致发光显示面板具有更长的使用寿命。\n\n[0108]可选的，基板21可为硬性基板或者柔性衬底。基板21的材质包括玻璃、蓝宝石、硅、二氧化硅、聚乙烯、聚丙烯、聚苯乙烯、聚乳酸、聚对苯二甲酸乙二醇酯、聚酰亚胺或聚氨酯中的一种\n\n[0109]可选的，薄膜晶体管TFT可以是顶栅型薄膜晶体管或底栅型薄膜晶体管。薄膜晶体管TFT可以是P型薄膜晶体管或N型薄膜晶体管。\n\n[0110]本申请的实施例以薄膜晶体管TFT为N型的顶栅薄膜晶体管为例进行阐述，但不限于此。\n\n[0111]可选的，薄膜晶体管层22包括依次设置在基板21上的有源层221、栅极绝缘层222、第一金属层223、层间介电层224、第二金属层225、第一平坦层226和第二平坦层227。\n\n[0112]其中，第一金属层223包括栅极。第二金属层225包括源极、漏极和公共线22c。\n\n[0113]漏极连接于第一电极231。公共线22c连接于第二电极232。\n\n[0114]有源层221、栅极、源极和漏极形成薄膜晶体管TFT。\n\n[0115]可选的，第一金属层223和第二金属层225的材料可以使用纯金属或合金，比如金、银、钨、钼、铁、铝、铝-硅、铝-钛等材料。\n\n[0116]可选的，栅极绝缘层222的材料可包括氮化硅、氧化硅以及有机光阻中的至少一种。\n\n[0117]可选的，第一平坦层226和第二平坦层227的材料可以是有机透明膜层，比如透明光刻胶，环氧树脂、聚酰亚胺、聚乙烯醇、聚甲基丙烯酸甲酯、聚苯乙烯等。\n\n[0118]可选的，第一导电层23和第二导电层26的材料可以是氧化铟锡、氧化铟锌等氧化物；还可以为各种导电特性的金属、合金以及化合物及其混合物，例如可以使用金、银或铂等等。\n\n[0119]在本实施例中，可选的，像素定义层24分别覆盖第一导电部261的部分和第二导电部262的部分。\n\n[0120]可选的，至少一个LED25包括纳米LED。\n\n[0121]可选的，LED25的长度为2-5微米，比如可以是2微米、3微米、4微米或5微米；宽度为100-500纳米，比如可以是100纳米、200纳米、300纳米、400纳米或500纳米；LED15呈棒状结构，但不限于此。\n\n[0122]可选的，请参照图3，LED25还包括半导体层253。半导体层253连接在第一端部251和第二端部252之间。第一端部251为P型半导体和N型半导体中的一者，第二端部252为P型半导体和N型半导体中的另一者。\n\n[0123]可选的，第一导电部261和第二导电部262均未连接半导体层253，避免发生短路。\n\n[0124]请参照图4，LED25还可以包括保护层254。保护层254覆盖半导体层253，且至多覆盖第一端部251的部分和至多覆盖第二端部252的部分。也即，LED25至少裸露出第一端部251的部分，以及至少裸露第二端部252的部分。\n\n[0125]本申请的实施例中，面板200还可以包括固定部27，固定部27设置在开口241内，且固定连接于LED25、第一电极231和第二电极232。\n\n[0126]固定部27将LED25固定在薄膜晶体管层22上。\n\n[0127]可选的，固定部27包括固定性质的材料和用于阻挡刻蚀的材料。其中，固定性质的材料用于固定连接薄膜晶体管层22和LED25，固定性质的材料可以是如聚甲基丙烯酸甲酯(PMMA)或丙烯酸丁酯(BA)。阻挡刻蚀的材料用于避免被蚀刻，其材料可以是氧化硅纳米颗粒。\n\n[0128]可选的，可参照图6，面板200还可以包括光转换层28。光转换层28设置在开口241内，且覆盖LED25。\n\n[0129]其中，光转换层28包括红色转换单元、绿色转换单元和蓝色转换单元。LED25可以发射蓝光或紫光。LED25发出的光激发光转换层28的材料，从而发出相应的颜色光。\n\n[0130]可选的，光转换层28的材料可以是量子点。红色转换单元的材料为红色量子点，绿色转换单元的单元为绿色量子点，蓝色转换单元的材料为蓝色量子点。\n\n[0131]在一些实施例中，光转换层28也可以包括红色转换单元、绿色转换单元和透光材料单元。LED25可以发射蓝光。\n\n[0132]本申请的实施例的面板200采用纳米级LED25作为发光单元，红绿像素采用量子点或其他色彩转换材料进行色彩转换，最终形成红绿蓝全彩显示面板，LED25均为蓝光纳米LED，各像素寿命性能一致，提升显示品味和寿命；同时相较于Mini LED面板，本实施例的面板200避免了巨量转移的步骤，简化了工艺步骤。\n\n[0133]本申请实施例的面板200还包括封装层29，封装层29覆盖像素定义层24和光转换层28。\n\n[0134]请参照图7，相应的，本申请实施例还涉及一种面板的第一种制备方法，其包括以下步骤：\n\n[0135]步骤S11：在基板上形成薄膜晶体管层；\n\n[0136]步骤S12：在所述薄膜晶体管层上形成图案化的第一导电层，所述第一导电层包括彼此分离的第一电极和第二电极；\n\n[0137]步骤S13：在所述第一导电层上放置至少一个LED，并对准所述第一电极和所述LED的第一端部以及对准所述第二电极和所述LED的第二端部，所述第一端部和所述第二端部相对设置；\n\n[0138]步骤S14：在所述LED上形成图案化的第二导电层，所述第二导电层包括第一导电部和第二导电部，所述第一导电部电连接于所述第一端部和所述第一电极，所述第二导电部电连接于所述第二端部和所述第二电极。\n\n[0139]本申请实施例的面板的制备方法采用在薄膜晶体管层上设置LED的结构替换了现有技术中Mini-LED面板和Micro-LED面板，避免了巨量转移的步骤，达到简化工艺的效果；另外上述的结构相较于单纯的电致发光显示面板具有更长的使用寿命。\n\n[0140]请参照图8-图10，相应的，本申请实施例还涉及一种面板的第二种制备方法，其包括以下步骤：\n\n[0141]步骤B101：在所述基板11上形成薄膜晶体管层12；\n\n[0142]步骤B102：在所述薄膜晶体管层12上形成图案化的第一导电层13，所述第一导电层13包括相互分离的第一电极131、第二电极132和第三电极133；\n\n[0143]步骤B103：在所述第一导电层13上形成图案化的像素定义层14和开口141，所述开口141包括第一开口14a和第二开口14b，所述第一开口14a裸露所述第一电极131和所述第二电极132，所述第二开口14b裸露所述第三电极133；\n\n[0144]步骤B104：在所述第一导电层13上放置至少一个LED15，并对准所述第一电极131和所述LED15的第一端部151以及对准所述第二电极132和所述LED15的第二端部152，所述第一端部151和所述第二端部152相对设置；\n\n[0145]步骤B105：在所述LED15上形成图案化的第二导电层16，所述第二导电层16包括第一导电部161和第二导电部162，所述第一导电部161电连接于所述第一端部151和所述第一电极131，所述第二导电部162电连接于所述第二端部152和所述第二电极132。\n\n[0146]步骤B106：在所述第一开口14a内填充绝缘材料17，使所述绝缘材料17覆盖所述LED15、所述第二导电部162的部分以及所述第一导电部161，所述第二导电部162的部分裸露；\n\n[0147]步骤B107：在所述第二开口14b内形成发光层18；\n\n[0148]步骤B108：依次在所述像素定义层14、所述发光层18和所述绝缘材料17上形成第四电极19和封装层20，所述第四电极19连接于所述第二导电部162。\n\n[0149]下文对本申请的面板的制备方法的第二种流程图进行阐述。其中需要说明的是，本实施例的制备方法用于制备上述实施例的面板100。\n\n[0150]请参照图9，步骤B101，在所述基板11上形成薄膜晶体管层12。其中基板11和薄膜晶体管层12的具体结构请参照上述实施例的面板100的相关内容，此处不再赘述。\n\n[0151]可选的，薄膜晶体管层12可以是氧化物薄膜晶体管层，低温多晶硅薄膜晶体管层或有机类薄膜晶体管层等。随后转入步骤B102。\n\n[0152]步骤B102：在所述薄膜晶体管层12上形成图案化的第一导电层13，所述第一导电层13包括相互分离的第一电极131、第二电极132和第三电极133。\n\n[0153]其中图案化的第一导电层13的具体结构请参照上述实施例的面板100的相关内容，此处不再赘述。随后转入步骤B103。\n\n[0154]步骤B103：在所述第一导电层13上形成图案化的像素定义层14和开口141。所述开口141包括第一开口14a和第二开口14b，所述第一开口14a裸露所述第一电极131和所述第二电极132，所述第二开口14b裸露所述第三电极133。\n\n[0155]可选的，像素定义层14的材料可以是有机光阻材料。随后转入步骤B104。\n\n[0156]步骤B104：在所述第一导电层13上放置至少一个LED15，并对准所述第一电极131和所述LED15的第一端部151以及对准所述第二电极132和所述LED15的第二端部152。所述第一端部151和所述第二端部152相对设置。\n\n[0157]可选的，LED15可以为纳米LED。\n\n[0158]可选的，采用打印或微流体传送的方式把LED15输送到第一开口14a中。随后采用电场力、磁场力、表面张力等配向技术，使得LED15的端部分别与第一电极131和第二电极132一一对应；之后采用干燥的方式去除打印或流体传送带来的溶剂。随后转入步骤B105。\n\n[0159]请参照图10，步骤B105：在所述LED15上形成图案化的第二导电层16。所述第二导电层16包括第一导电部161和第二导电部162，所述第一导电部161电连接于所述第一端部151和所述第一电极131，所述第二导电部162电连接于所述第二端部152和所述第二电极132。\n\n[0160]可选的，采用喷墨打印或蒸镀的方式在LED15上形成导电材料层，随后可采用光刻或其他的方式形成图案化的第二导电层16，并使得第一端部151和第二端部152一一对应的与第一电极131和第二电极132连接。随后转入步骤B106。\n\n[0161]步骤B106：在所述第一开口14a内填充绝缘材料17，使所述绝缘材料17覆盖所述LED15、所述第二导电部162的部分以及所述第一导电部161，所述第二导电部162的部分裸露。\n\n[0162]可选的，绝缘材料17具有良好的封装性。随后转入步骤B107。\n\n[0163]步骤B107：在所述第二开口14b内形成发光层18。\n\n[0164]可选的，发光层18的材料可以是有机材料或无机材料。\n\n[0165]可选的，LED15可以为发蓝光的LED；发光层18可以包括红色发光层181和绿色发光层182；由于LED的发光性能好于蓝色量子点，因此采用红色量子点、绿色量子点作为发光层18，采用发蓝光的LED15替换蓝色量子点，则可达到性能、寿命相匹配，从而提高了面板100的整体寿命及品味。\n\n[0166]随后转入步骤B108。\n\n[0167]步骤B108：依次在所述像素定义层14、所述发光层18和所述绝缘材料17上形成第四电极19和封装层20，所述第四电极19连接于所述第二导电部162。\n\n[0168]这样便完成了本申请实施例的面板的制备方法的第二种方法。\n\n[0169]请参照图11-图13，本申请实施例的面板的第三种制备方法，其包括以下步骤：\n\n[0170]步骤B201：在基板21上形成薄膜晶体管层22；\n\n[0171]步骤B202：在所述薄膜晶体管层22上形成图案化的第一导电层23，所述第一导电层23包括彼此分离的第一电极231和第二电极232；\n\n[0172]步骤B203：在所述第一导电层23上形成图案化的牺牲层XS和第一开口XS1，所述第一开口XS1裸露所述第一电极231和所述第二电极232。\n\n[0173]步骤B204：在所述第一导电层23上放置至少一个LED25，并对准所述第一电极231和所述LED25的第一端部251以及对准所述第二电极232和所述LED25的第二端部252。所述第一端部251和所述第二端部252相对设置。\n\n[0174]步骤B205：去除所述牺牲层XS；\n\n[0175]步骤B206：在所述薄膜晶体管层22上形成图案化的光阻层GZ，以所述光阻层GZ为掩模，蚀刻掉所述LED25和所述第一导电层23上裸露的材料。所述光阻层GZ上开设有第二开口GZ1和第三开口GZ2，所述第二开口GZ1对应于所述第一电极231和所述LED的第一端部，所述第三开口ZG2对应于所述第二电极232和所述LED25的第二端部252。\n\n[0176]步骤B207：在所述LED25上形成图案化的第二导电层26，所述第二导电层26包括第一导电部261和第二导电部262，所述第一导电部261电连接于所述第一端部251和所述第一电极231，所述第二导电部262电连接于所述第二端部252和所述第二电极232。\n\n[0177]步骤B208：在所述第二导电层26上形成像素定义层24，所述像素定义层24上开设有第四开口241，所述第四开口241裸露所述LED25；\n\n[0178]步骤B209：在所述第四开口241内形成光转换层28，之后在所述光转换层28上形成封装层29。\n\n[0179]下文对上述实施例的面板的制备方法进行阐述。需要说明的是，本申请实施例的面板的第三种制备方法用于制备上述实施例的面板200。\n\n[0180]请参照图12，步骤B201：在基板21上形成薄膜晶体管层22。\n\n[0181]其中基板21和薄膜晶体管层22的具体结构请参照上述实施例的面板200的相关内容，此处不再赘述。\n\n[0182]可选的，薄膜晶体管层22可以是氧化物薄膜晶体管层，低温多晶硅薄膜晶体管层或有机类薄膜晶体管层等。随后转入步骤B202。\n\n[0183]步骤B202：在所述薄膜晶体管层22上形成图案化的第一导电层23，所述第一导电层23包括彼此分离的第一电极231和第二电极232。\n\n[0184]其中图案化的第一导电层23的具体结构请参照上述实施例的面板200的相关内容，此处不再赘述。随后转入步骤B203。\n\n[0185]步骤B203：在所述第一导电层23上形成图案化的牺牲层XS和第一开口XS1，所述第一开口XS1裸露所述第一电极231和所述第二电极232。\n\n[0186]可选的，牺牲层XS的材料可以是有机光阻材料。随后转入步骤204。\n\n[0187]步骤B204：在所述第一导电层23上放置至少一个LED25，并对准所述第一电极231和所述LED25的第一端部251以及对准所述第二电极232和所述LED25的第二端部252。所述第一端部251和所述第二端部252相对设置。\n\n[0188]可选的，步骤204包括：\n\n[0189]在所述第一开口XS1内放置LED溶液RY，所述LED溶液RY覆盖所述第一导电层23，所述LED溶液RY包括所述LED25、溶剂、固定性质的材料和用于阻挡刻蚀的材料；\n\n[0190]对准所述第一电极231和所述LED25的第一端部251以及对准所述第二电极232和所述LED的第二端部252；\n\n[0191]干燥所述LED溶液RY，去除所述溶剂，固定性质的材料和用于阻挡刻蚀的材料形成固定部27，以使所述LED25通过所述固定性质的材料固定在所述薄膜晶体管层上。\n\n[0192]可选的，采用打印或微流体传送的方式把LED溶液RY输送到第一开口XS1中。随后采用电场力、磁场力、表面张力等配向技术，使得LED25的端部分别与第一电极231和第二电极232一一对应；之后采用干燥的方式去除打印或流体传送带来的溶剂。随后转入步骤205。\n\n[0193]步骤B205：去除所述牺牲层XS；随后转入步骤B206。\n\n[0194]请参照图13，步骤B206：在所述薄膜晶体管层22上形成图案化的光阻层GZ，以所述光阻层GZ为掩模，蚀刻掉所述LED25和所述第一导电层23上裸露的材料。所述光阻层GZ上开设有第二开口GZ1和第三开口GZ2，所述第二开口GZ1对应于所述第一电极231和所述LED的第一端部，所述第三开口ZG2对应于所述第二电极232和所述LED25的第二端部252。\n\n[0195]在蚀刻后，裸露出所述第一电极、所述第二电极、所述LED的第一端部和所述LED的第二端部。随后转入步骤B207。\n\n[0196]步骤B207：在所述LED25上形成图案化的第二导电层26，所述第二导电层26包括第一导电部261和第二导电部262，所述第一导电部261电连接于所述第一端部251和所述第一电极231，所述第二导电部262电连接于所述第二端部252和所述第二电极232。\n\n[0197]可选的，所述光阻层GZ具有底切结构GZ2。可选的，底切结构GZ2为具有倒角的镂空结构。\n\n[0198]步骤B207：包括：\n\n[0199]所述光阻层GZ上形成导电材料层，所述导电材料层覆盖所述第一电极231和所述LED25的第一端部251，以及覆盖所述第二电极232和所述LED25的第二端部252；\n\n[0200]去除所述光阻层GZ，形成图案化的所述第二导电层26，使所述第一导电部261电连接于所述第一端部251和所述第一电极231，所述第二导电部262电连接于所述第二端部252和所述第二电极232。\n\n[0201]由于光阻层GZ具有底切结构GZ2，使得到导电材料层在成膜时与底切结构GZ2处发光断裂，因此可以直接剥离光阻层GZ，进而剥离光阻层GZ上的导电材料层，形成图案化的第二导电层26，节省了光罩。\n\n[0202]随后转入步骤B208。\n\n[0203]步骤B208：在所述第二导电层26上形成像素定义层24，所述像素定义层24上开设有第四开口241，所述第四开口241裸露所述LED25。像素定义层24分别覆盖第一导电部261的部分和第二导电部262的部分。\n\n[0204]其中第四开口241为面板200的开口241。随后转入步骤B209。\n\n[0205]步骤B209：在所述第四开口241内形成光转换层28，之后在所述光转换层28上形成封装层29。\n\n[0206]其中，光转换层28包括红色转换单元、绿色转换单元和蓝色转换单元。LED25可以发射蓝光或紫光。LED25发出的光激发光转换层28的材料，从而发出相应的颜色光。\n\n[0207]可选的，光转换层28的材料可以是量子点。红色转换单元的材料为红色量子点，绿色转换单元的单元为绿色量子点，蓝色转换单元的材料为蓝色量子点。\n\n[0208]在一些实施例中，光转换层28也可以包括红色转换单元、绿色转换单元和透光材料单元。LED25可以发射蓝光。\n\n[0209]这样便完成了本申请实施例的面板的第三制备方法的步骤。\n\n[0210]以上对本申请实施例所提供的一种面板及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10955, 24009, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种背光模组和显示装置。\n\n背景技术\n\n[0002]现有Mini LED(次毫米发光二极管)具有尺寸小、易实现超薄多分区等诸多优点，使得Mini LED技术成为当下重要的技术发展方向。目前，业界将Mini LED作为背光源搭配液晶显示面板(Liquid Crystal Display，LCD)，实现超薄、高亮、多分区的显示产品。但对于大尺寸的显示产品而言，由于受表面贴装工艺(Surface Mounting Technology，SMT)机台尺寸限制，同一显示产品的背光通常需要把多块Mini LED灯板拼接而成，而在灯板的拼接处容易出现亮度不均(mura)的问题，造成显示产品的视效品味不佳。\n\n[0003]因此，现有显示产品的灯板拼接处存在亮度不均的技术问题需要解决。\n\n发明内容\n\n[0004]本申请提供一种背光模组和显示装置，以缓解现有显示产品的灯板拼接处存在亮度不均的技术问题。\n\n[0005]为解决上述问题，本申请提供的技术方案如下：\n\n[0006]本申请实施例提供一种背光模组，其包括：\n\n[0007]背板；\n\n[0008]沿第一方向拼接设置在所述背板上的多个灯板，所述灯板包括至少两个间隔设置的光源组，每个所述光源组包括至少两个沿第二方向设置的光源；\n\n[0009]沿第一方向搭接设置的多个用于反射光线的反射片，相邻反射片的搭接区位于同一灯板内相邻光源组之间；\n\n[0010]其中，相邻灯板的拼接区位于同一反射片的非搭接区内。\n\n[0011]在本申请实施例提供的背光模组中，所述背光模组还包括：\n\n[0012]沿第二方向拼接设置在所述背板上的多个灯板，所述灯板包括至少两个间隔设置的光源组，每个所述光源组包括至少两个沿第一方向设置的光源；\n\n[0013]沿第二方向搭接设置的多个用于反射光线的反射片，相邻反射片的搭接区位于同一灯板内相邻光源组之间；\n\n[0014]其中，相邻灯板的拼接区位于同一反射片的非搭接区内。\n\n[0015]在本申请实施例提供的背光模组中，相互拼接的两个灯板为第一灯板和第二灯板，所述第一灯板上设置有第一反射片，所述第二灯板上设置有第二反射片，所述第一反射片延伸至所述第二灯板与所述第二反射片搭接。\n\n[0016]在本申请实施例提供的背光模组中，所述第一反射片在对应所述第一灯板上的光源的位置设置有第一开孔，所述第二反射片在对应所述第二灯板上的光源的位置设置有第二开孔，所述第一开孔以及所述第二开孔的面积均大于对应的所述光源的面积，以裸露出所述光源。\n\n[0017]在本申请实施例提供的背光模组中，所述第一反射片以及所述第二反射片的厚度均小于对应的所述光源的高度。\n\n[0018]在本申请实施例提供的背光模组中，所述第一反射片在对应所述第二灯板上的光源的位置设置有第三开孔，所述第三开孔的面积大于所述第二开孔的面积。\n\n[0019]在本申请实施例提供的背光模组中，所述第二灯板上的光源组的数量至少为3，所述第一反射片和所述第二反射片的搭接区位于靠近所述第一灯板和所述第二灯板拼接区的相邻两个光源组之间。\n\n[0020]在本申请实施例提供的背光模组中，在同一灯板上，相邻的两个所述光源组之间的间隔与相邻的两个光源之间的间隔相等。\n\n[0021]在本申请实施例提供的背光模组中，所述光源包括mini LED芯片。\n\n[0022]本申请实施例还提供一种显示装置，其包括前述实施例其中之一的背光模组、与所述背光模组相对设置的显示面板。\n\n[0023]本申请的有益效果为：本申请提供的背光模组和显示装置中，背板上的多个灯板相互拼接形成有拼接区，每个灯板上还设置有反射片，相邻两个反射片的搭接区设置在同一灯板上的光源组之间，通过把相邻反射片的搭接区设置在非拼接区，使得搭接区的反射片凸起不会把过多的光线反射至拼接区而造成拼接区亮度不均，解决了现有显示产品的灯板拼接处存在亮度不均的问题。\n\n附图说明\n\n[0024]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0025]图1为本申请实施例提供的背光模组的一种剖面结构示意图。\n\n[0026]图2为本申请实施例提供的灯板拼接的一种俯视结构示意图。\n\n[0027]图3为图2中沿A-A方向的剖面结构示意图。\n\n[0028]图4为本申请实施例提供的灯板拼接的另一种俯视结构示意图。\n\n[0029]图5为本申请实施例提供的灯板拼接的又一种俯视结构示意图。\n\n[0030]图6为本申请实施例提供的灯板拼接的一种剖面结构示意图。\n\n[0031]图7为本申请实施例提供的显示装置的剖面结构示意图。\n\n具体实施方式\n\n[0032]以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。在附图中，为了清晰理解和便于描述，夸大了一些层和区域的厚度。即附图中示出的每个组件的尺寸和厚度是任意示出的，但是本申请不限于此。\n\n[0033]请结合参照图1至图3，图1为本申请实施例提供的背光模组的一种剖面结构示意图，图2为本申请实施例提供的灯板拼接的一种俯视结构示意图，图3为图2中沿A-A方向的剖面结构示意图。背光模组100包括背板10、多个灯板20、反射片30以及扩散片40等光学膜片，所述背板10形成有容纳腔，用于容纳并固定多个所述灯板20、所述反射片30以及所述扩散片40等光学膜片。多个所述灯板20(如图2中的第一灯板21和第二灯板22)沿第一方向X拼接设置在所述背板10形成的容纳腔底部。所述反射片30设置在所述灯板20的出光面，用于反射所述灯板20发出的光线，以提高光线的利用率。所述扩散片40设置在所述反射片30的相对上方，用于使光线扩散形成均匀的面光源。\n\n[0034]具体地，多个所述灯板20沿第一方向X拼接设置在所述背板10上，所述灯板20(如图2中的第一灯板21和第二灯板22)包括至少两个间隔设置的光源组(如图2中的第一光源组211或第二光源组221)，每个所述光源组包括至少两个沿第二方向Y设置的光源(如图2中的第一光源212或第二光源222)，所述光源包括mini LED等。所述灯板20还包括驱动基板50，所述光源设置在所述驱动基板50上，所述驱动基板50用于驱动所述光源发光。其中，所述第一方向X和所述第二方向Y相互垂直，可选地，所述第一方向X为水平方向，所述第二方向Y为竖直方向，或者所述第一方向X为竖直方向，所述第二方向Y为水平方向，当然本申请不限于此，本申请的所述第一方向X和所述第二方向Y还可成其他预设夹角设置，比如预设夹角为45度或60度等。\n\n[0035]其中在同一灯板20上，相邻的两个所述光源组之间的间隔L1与相邻的两个光源L2之间的间隔相等，如此使得同一灯板20上的所有相邻光源之间的间隔均相等，这样在所述灯板20上设置光源时能够简化工艺，而且使得所述灯板20整个出光面的出光更为均匀，避免同一灯板20上不同区域的亮度不均。比如在灯板20上设置mini LED光源时，通常需要先在转移基板上制备mini LED芯片，然后采用打件、巨量转移等转移技术把mini LED芯片转移到驱动基板50上形成灯板20，所述驱动基板50包括玻璃基板或PCB板等。当然地，所述驱动基板50上需要设置驱动电路，以驱动所述mini LED芯片发光。而当把mini LED芯片等间距的转移到所述驱动基板50上与对应的驱动电路连接，明显可以降低转移工艺的难度，提高转移效率。\n\n[0036]下面将以沿第一方向X相邻拼接设置的灯板20为第一灯板21和第二灯板22为例具体阐述本申请的拼接灯板结构。\n\n[0037]如图2所示，所述第一灯板21上间隔设置有两个第一光源组211，每个所述第一光源组211包括两个沿第二方向Y设置的第一光源212；所述第二灯板22上间隔设置有两个第二光源组221，每个所述第二光源组221包括两个沿第二方向Y设置的第二光源222。需要说明的是，本实施例图2示意出的灯板数量、灯板上的光源组数量以及光源组中光源的数量仅用于说明本申请的灯板结构，而本申请的灯板数量、灯板上的光源组数量以及光源组中光源的数量具体根据实际需求进行配置，比如灯板的数量取决于受工艺限制灯板的尺寸以及实际产品的尺寸等。\n\n[0038]所述第一灯板21和所述第二灯板22拼接在一块，在相互拼接的位置形成一拼接区PD，所述拼接区PD是指所述第一灯板21上靠近拼接位置的第一光源组211与所述第二灯板22上的靠近拼接位置的第二光源组221之间的区域，也即相邻的所述第一光源组211和所述第二光源组221之间的区域。所述第一灯板21和所述第二灯板22拼接后，在所述拼接区PD会形成一条细小的拼缝60，所述拼缝60的存在容易导致在拼接区PD出现亮度不均，从而影响显示产品的显示品味。\n\n[0039]而灯板上通常会设置反射片，使得灯板上的光源发出的光线经过反射片的反射后，出光更为均匀，且能提高光线的利用率。考虑到拼缝导致的亮度不均，把反射片延伸到灯板的拼接区与相邻灯板上的反射片搭接，用反射片遮挡住所述拼缝，以此改善因所述拼缝导致的亮度不均。\n\n[0040]但发明人在研究中发现如此设计会导致另外一个问题，在拼接区搭接的反射片在搭接位置存在凸起结构，凸起结构和平整的反射片对光线的反射效果不同，使得拼接区还是存在亮度不均，尤其地，对于拼接区亮度大于灯板其他区域亮度的情况，影响更大。比如灯板的控制端(如驱动IC等)通常位于灯板的非拼接区，而设置在灯板上且与控制端连接的各种走线一般会分布在灯板的拼接侧，并从拼接侧向灯板中间区域延伸。由于电压降的存在，灯板边缘的亮度会大于灯板中间区域的亮度，使得灯板拼接区的亮度大于灯板其他区域的亮度，导致拼接区亮度不均。而拼接区反射片凸起结构的存在会加剧拼接区亮度不均的情况。\n\n[0041]为此，发明人找到了一种解决方案：继续参照图2和图3，所述灯板20上还设置有沿第一方向X搭接设置的多个反射片30(如图2中的第一反射片31和第二反射片32)，相邻反射片30的搭接区DD位于同一灯板20内相邻光源组之间。\n\n[0042]具体地，所述第一灯板21上设置有第一反射片31，所述第二灯板22上设置有第二反射片32，所述第一反射片31延伸至所述第二灯板22与所述第二反射片32搭接。更具体地，所述第一反射片31跨过所述拼接区PD，并与所述第二反射片32在所述第二灯板22上相邻的所述第二光源组221之间搭接，形成所述第一反射片31和所述第二反射片32的搭接区DD。在所述搭接区DD，所述第一反射片31和所述第二反射片32存在部分重叠区域，使得所述第一反射片31和所述第二反射片32的搭接位置呈凸起结构314，形成高度差。该高度差通常可在0.3mm左右，也即相当于所述第一反射片31或所述第二反射片32的厚度。\n\n[0043]需要说明的是，所述第一灯板21上的所述第一反射片31在靠近拼接区PD的一侧超出所述第一灯板21的边界，所述第二灯板22上的所述第二反射片32在靠近拼接区PD的一侧未覆盖所述第二灯板22的边缘，也即所述第一反射片31和所述第二反射片32在拼接区PD不存在重叠。但所述第一反射片31远离拼接区PD的一侧是否与所述第一灯板21边界平齐取决于沿所述第一方向X拼接设置的灯板20的数量以及所述第一灯板21在沿所述第一方向X拼接设置的灯板20中的位置。\n\n[0044]比如沿所述第一方向X拼接设置的灯板20的数量为两个时，所述第一反射片31远离拼接区PD的一侧与所述第一灯板21边界平齐。沿所述第一方向X拼接设置的灯板20的数量为三个或三个以上时，当所述第一灯板21位于拼接设置的多个灯板20的边缘时，所述第一反射片31远离拼接区PD的一侧与所述第一灯板21边界平齐；当还有其他灯板(除了所述第二灯板22)与所述第一灯板21拼接时，所述第一反射片31远离拼接区PD的一侧未覆盖所述第一灯板21的边界。\n\n[0045]相对应地，所述第二反射片32远离拼接区PD的一侧是否超出所述第二灯板22的边界也同样取决于沿所述第一方向X拼接设置的灯板20的数量以及所述第二灯板22在沿所述第一方向X拼接设置的灯板20中的位置，在此不再赘述。\n\n[0046]另外，相邻灯板20的拼接区PD位于同一反射片30的非搭接区DD内，同一反射片30是指相邻灯板20的拼接区PD对应的反射片30。比如，所述第一灯板21和所述第二灯板22的拼接区PD对应的反射片30为所述第一反射片31，则所述第一灯板21和所述第二灯板22的拼接区PD位于所述第一反射片31的非搭接区DD。如此所述第一反射片31和所述第二反射片32在所述搭接区DD形成的凸起结构314就会远离所述第一灯板21和所述第二灯板22的拼接区PD，解决了反射片搭接区位于拼接区导致拼接区亮度不均的问题。\n\n[0047]进一步地，所述第一反射片31在对应所述第一灯板21上的第一光源组211的位置设置有第一开孔311，所述第二反射片32在对应所述第二灯板22上的第二光源222的位置设置有第二开孔312，所述第一开孔311的面积大于所述第一光源组211的面积，以裸露出所述第一光源212；所述第二开孔312的面积大于所述第二光源222的面积，以裸露出所述第二光源222。其中所述反射片30上的开孔(如第一反射片31上的第一开孔311)的面积是指所述开孔的开口面积，所述光源(如所述第一光源组211、所述第二光源222)的面积是指所述光源在灯板20上的正投影面积。\n\n[0048]可选地，为了降低工艺难度，所述第一光源212和所述第二光源222的规格相同，如此在转移工艺中可以采用相同的转移方案和设备，且使得灯板20拼接形成的背光的整个出光面的出光更均匀，以减小不同灯板20之间的亮度差异。当所述第一光源212和所述第二光源222的规格相同时，所述第一反射片31上的第一开孔311的面积与所述第二反射片32上的第二开孔312的面积相等。\n\n[0049]同时，所述第一反射片31在对应所述第二灯板22上的第二光源222的位置设置有第三开孔313，所述第三开孔313的面积大于所述第二开孔312的面积。具体地，所述第一反射片31跨过拼接区PD并朝所述第一方向X延伸，且在所述第二灯板22上相邻的第二光源组221之间与所述第二反射片32搭接，故所述第一反射片31还会跨过至少一组第二光源组221，所述第一反射片31在对应跨过的第二光源组221内的每个第二光源222处均需设置一个第三开孔313，以裸露出对应的所述第二光源222。\n\n[0050]而所述第一反射片31与所述第二反射片32的搭接是在所述第一灯板21和所述第二灯板22拼接后或拼接时进行的，为了使所述第一反射片31能够顺畅的跨过所述第二光源组221内的第二光源222与所述第二反射片32搭接，所述第一反射片31上的第三开孔313需大于所述第二反射片32上的第二开孔312，以使得所述第一反射片31在搭接时不会与对应的所述第二光源222发生干涉。\n\n[0051]进一步地，所述第一反射片31以及所述第二反射片32的厚度均小于对应的所述光源的高度。比如所述第一反射片31的厚度小于所述第一光源212的高度，所述第二反射片32的厚度小于所述第二光源222的高度。同时由于所述第一反射片31在对应所述第一光源212的位置设置有第一开孔311，在对应所述第二光源222的位置设置有第三开孔313，所述第二反射片32在对应所述第二光源222的位置设置有第二开孔312，使得所述第一光源212可穿过所述第一开孔311并超出所述第一反射片31的高度，所述第二光源222可穿过所述第二开孔312和所述第三开孔313并超出所述第二反射片32的高度，且所述第二光源222的高度还大于所述第一反射片31和所述第二反射片32搭接处凸起结构314的高度。如此，所述第一光源组211和所述第二光源222向四周发射的光线均会照射到对应的反射片30上，并被反射片30反射至所述扩散片40上，大大提高了光源发出的光线的利用率。\n\n[0052]所述扩散片40具有扩散光线的作用，使经过所述扩散片40的光线以均匀的面光源出射。可选地，所述扩散片40可把散射粒子分散在树脂等基材中形成，当光线穿过所述扩散片40时，由于扩散片40中具有折射率相异的介质，会使得光线发生许多折射、反射与散射的现象，可把光线修正成均匀面光源，以达到光学扩散的效果。\n\n[0053]在一种实施例中，请参照图4，图4为本申请实施例提供的灯板拼接的另一种俯视结构示意图。与上述实施例不同的是，所述第二灯板22上的第二光源组221的数量至少为3，所述第一反射片31和所述第二反射片32的搭接区DD位于靠近所述第一灯板21和所述第二灯板22拼接区PD的相邻两个第二光源组221之间。\n\n[0054]把所述第一反射片31和所述第二反射片32的搭接区DD设置在靠近拼接区PD的第二光源组221之间，使得所述第一反射片31仅需跨过一个所述第二光源组221，这样在所述第一反射片31上也仅需设置少量的第三开孔313即可，降低了所述第一反射片31工艺难度。同时也使得所述第一反射片31和所述第二反射片32的搭接更简单，降低了搭接的工艺难度。另外，采用如此搭接方式，所述第一反射片31也无需超出所述第一灯板21的边界过多，可提高所述第一反射片31的稳定性。其他说明请参照上述实施例，在此不再赘述。\n\n[0055]在一种实施例中，请结合参照图1和图5，图5为本申请实施例提供的灯板拼接的又一种俯视结构示意图。与上述实施例不同的是，所述背光模组100还包括沿第二方向Y拼接设置在所述背板10上的多个灯板20，所述灯板20包括至少两个间隔设置的光源组，每个所述光源组包括至少两个沿第一方向X设置的光源；沿第二方向Y搭接设置的多个用于反射光线的反射片30，相邻反射片30的搭接区DD位于同一灯板20内相邻光源组之间；其中，相邻灯板20的拼接区PD位于同一反射片30的非搭接区DD内。\n\n[0056]具体地，本实施例仍以沿第二方向Y相邻拼接设置的灯板20为第一灯板21’和第二灯板22’为例具体阐述本申请的拼接灯板结构。所述背光模组100的背光包括沿第一方向X相邻拼接设置的第一灯板21和第二灯板22，以及沿第二方向Y相邻拼接设置的第一灯板21’和第二灯板22’，其中所述第一灯板21’和所述第一灯板21为同一块灯板，所述第二灯板22’和所述第二灯板22为不同块灯板。当然，本实施例仅以图5示意的由4块灯板纵横拼接成所述背光模组100的背光为例说明，本申请不限于此，本申请的所述背光模组100的背光可以由更多的灯板20拼接而成，具体拼接灯板20的数量取决于灯板20的尺寸、显示产品的尺寸以及显示产品的形状等。\n\n[0057]所述第一灯板21’上间隔设置有两个第一光源组211’，每个所述第一光源组211’包括两个沿第二方向Y设置的第一光源212’；所述第二灯板22’上间隔设置有两个第二光源组221’，每个所述第二光源组221’包括两个沿第二方向Y设置的第二光源222’。\n\n[0058]进一步地，所述第一灯板21’上设置有第一反射片31’，所述第二灯板22’上设置有第二反射片32’，所述第一反射片31’延伸至所述第二灯板22’与所述第二反射片32’搭接。所述第一灯板21’和所述第二灯板22’的拼接区PD位于所述第一反射片31’的非搭接区DD。如此所述第一反射片31’和所述第二反射片32’在所述搭接区DD形成的凸起结构就会远离所述第一灯板21’和所述第二灯板22’的拼接区PD，解决了反射片搭接区位于拼接区导致拼接区亮度不均的问题。\n\n[0059]所述第一反射片31’在对应所述第一灯板21’上的第一光源212’的位置设置有第一开孔311’，所述第二反射片32’在对应所述第二灯板22’上的第二光源222’的位置设置有第二开孔312’，所述第一开孔311’的面积大于所述第一光源212’的面积，以裸露出所述第一光源212’；所述第二开孔312’的面积大于所述第二光源222’的面积，以裸露出所述第二光源222’。\n\n[0060]所述第一反射片31’在对应所述第二灯板22’上的第二光源222’的位置设置有第三开孔313’，所述第三开孔313’的面积大于所述第二开孔312’的面积。具体地，所述第一反射片31’跨过拼接区PD并朝所述第一方向X延伸，且在所述第二灯板22’上相邻的第二光源组221’之间与所述第二反射片32’搭接，故所述第一反射片31’还会跨过至少一组第二光源组221’，所述第一反射片31’在对应跨过的第二光源组221’内的每个第二光源222’处均需设置一个第三开孔313’，以裸露出对应的所述第二光源222’。其他说明请参照上述实施例，在此不再赘述。\n\n[0061]在一种实施例中，请结合参照图1至图6，图6为本申请实施例提供的灯板拼接的再一种剖面结构示意图。与上述实施例不同的是，所述第一灯板21和所述第二灯板22的拼接区PD内的拼缝60内设置有支撑柱70，所述支撑柱70从所述拼缝60穿过并超出灯板(如第一灯板21和第二灯板22)上光源(如第一光源212和第二光源222)的高度，用于支撑灯板上方的扩散片40以及其他光学膜片，同时所述支撑柱70还能够防止所述第一灯板21和所述第二灯板22之间光源的混光。其他说明请参照上述实施例，在此不再赘述。\n\n[0062]在一种实施例中，请参照图7，图7为本申请实施例提供的显示装置的剖面结构示意图。所述显示装置1000包括前述实施例其中之一的背光模组100、与所述背光模组100相对设置的显示面板200以及设置在所述显示面板200远离所述背光模组100一侧的盖板等。所述背光模组100为所述显示面板200提供背光，所述显示面板200包括相对设置的第一基板11和第二基板12、设置在第一基板11和第二基板12之间的多个液晶分子13、贴附于所述第一基板11面向背光模组100的下偏光片14以及贴附于所述第二基板12远离所述第一基板11一侧的上偏光片15，其中所述第一基板11为阵列基板，所述第二基板12为彩膜基板。\n\n[0063]根据上述实施例可知：\n\n[0064]本申请提供一种背光模组和显示装置，该背光模组的背板上的多个灯板相互拼接形成有拼接区，每个灯板上还设置有反射片，相邻两个反射片的搭接区设置在同一灯板上的光源组之间，通过把相邻反射片的搭接区设置在非拼接区，使得搭接区的反射片凸起不会把过多的光线反射至拼接区而造成拼接区亮度不均，解决了现有显示产品的灯板拼接处存在亮度不均的问题。\n\n[0065]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0066]以上对本申请实施例进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种背光模组和显示装置。\n\n背景技术\n\n[0002]现有Mini LED(次毫米发光二极管)具有尺寸小、易实现超薄多分区等诸多优点，使得Mini LED技术成为当下重要的技术发展方向。目前，业界将Mini LED作为背光源搭配液晶显示面板(Liquid Crystal Display，LCD)，实现超薄、高亮、多分区的显示产品。但对于大尺寸的显示产品而言，由于受表面贴装工艺(Surface Mounting Technology，SMT)机台尺寸限制，同一显示产品的背光通常需要把多块Mini LED灯板拼接而成，而在灯板的拼接处容易出现亮度不均(mura)的问题，造成显示产品的视效品味不佳。\n\n[0003]因此，现有显示产品的灯板拼接处存在亮度不均的技术问题需要解决。\n\n发明内容\n\n[0004]本申请提供一种背光模组和显示装置，以缓解现有显示产品的灯板拼接处存在亮度不均的技术问题。\n\n[0005]为解决上述问题，本申请提供的技术方案如下：\n\n[0006]本申请实施例提供一种背光模组，其包括：\n\n[0007]背板；\n\n[0008]沿第一方向拼接设置在所述背板上的多个灯板，所述灯板包括至少两个间隔设置的光源组，每个所述光源组包括至少两个沿第二方向设置的光源；\n\n[0009]沿第一方向搭接设置的多个用于反射光线的反射片，相邻反射片的搭接区位于同一灯板内相邻光源组之间；\n\n[0010]其中，相邻灯板的拼接区位于同一反射片的非搭接区内。\n\n[0011]在本申请实施例提供的背光模组中，所述背光模组还包括：\n\n[0012]沿第二方向拼接设置在所述背板上的多个灯板，所述灯板包括至少两个间隔设置的光源组，每个所述光源组包括至少两个沿第一方向设置的光源；\n\n[0013]沿第二方向搭接设置的多个用于反射光线的反射片，相邻反射片的搭接区位于同一灯板内相邻光源组之间；\n\n[0014]其中，相邻灯板的拼接区位于同一反射片的非搭接区内。\n\n[0015]在本申请实施例提供的背光模组中，相互拼接的两个灯板为第一灯板和第二灯板，所述第一灯板上设置有第一反射片，所述第二灯板上设置有第二反射片，所述第一反射片延伸至所述第二灯板与所述第二反射片搭接。\n\n[0016]在本申请实施例提供的背光模组中，所述第一反射片在对应所述第一灯板上的光源的位置设置有第一开孔，所述第二反射片在对应所述第二灯板上的光源的位置设置有第二开孔，所述第一开孔以及所述第二开孔的面积均大于对应的所述光源的面积，以裸露出所述光源。\n\n[0017]在本申请实施例提供的背光模组中，所述第一反射片以及所述第二反射片的厚度均小于对应的所述光源的高度。\n\n[0018]在本申请实施例提供的背光模组中，所述第一反射片在对应所述第二灯板上的光源的位置设置有第三开孔，所述第三开孔的面积大于所述第二开孔的面积。\n\n[0019]在本申请实施例提供的背光模组中，所述第二灯板上的光源组的数量至少为3，所述第一反射片和所述第二反射片的搭接区位于靠近所述第一灯板和所述第二灯板拼接区的相邻两个光源组之间。\n\n[0020]在本申请实施例提供的背光模组中，在同一灯板上，相邻的两个所述光源组之间的间隔与相邻的两个光源之间的间隔相等。\n\n[0021]在本申请实施例提供的背光模组中，所述光源包括mini LED芯片。\n\n[0022]本申请实施例还提供一种显示装置，其包括前述实施例其中之一的背光模组、与所述背光模组相对设置的显示面板。\n\n[0023]本申请的有益效果为：本申请提供的背光模组和显示装置中，背板上的多个灯板相互拼接形成有拼接区，每个灯板上还设置有反射片，相邻两个反射片的搭接区设置在同一灯板上的光源组之间，通过把相邻反射片的搭接区设置在非拼接区，使得搭接区的反射片凸起不会把过多的光线反射至拼接区而造成拼接区亮度不均，解决了现有显示产品的灯板拼接处存在亮度不均的问题。\n\n附图说明\n\n[0024]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0025]图1为本申请实施例提供的背光模组的一种剖面结构示意图。\n\n[0026]图2为本申请实施例提供的灯板拼接的一种俯视结构示意图。\n\n[0027]图3为图2中沿A-A方向的剖面结构示意图。\n\n[0028]图4为本申请实施例提供的灯板拼接的另一种俯视结构示意图。\n\n[0029]图5为本申请实施例提供的灯板拼接的又一种俯视结构示意图。\n\n[0030]图6为本申请实施例提供的灯板拼接的一种剖面结构示意图。\n\n[0031]图7为本申请实施例提供的显示装置的剖面结构示意图。\n\n具体实施方式\n\n[0032]以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。在附图中，为了清晰理解和便于描述，夸大了一些层和区域的厚度。即附图中示出的每个组件的尺寸和厚度是任意示出的，但是本申请不限于此。\n\n[0033]请结合参照图1至图3，图1为本申请实施例提供的背光模组的一种剖面结构示意图，图2为本申请实施例提供的灯板拼接的一种俯视结构示意图，图3为图2中沿A-A方向的剖面结构示意图。背光模组100包括背板10、多个灯板20、反射片30以及扩散片40等光学膜片，所述背板10形成有容纳腔，用于容纳并固定多个所述灯板20、所述反射片30以及所述扩散片40等光学膜片。多个所述灯板20(如图2中的第一灯板21和第二灯板22)沿第一方向X拼接设置在所述背板10形成的容纳腔底部。所述反射片30设置在所述灯板20的出光面，用于反射所述灯板20发出的光线，以提高光线的利用率。所述扩散片40设置在所述反射片30的相对上方，用于使光线扩散形成均匀的面光源。\n\n[0034]具体地，多个所述灯板20沿第一方向X拼接设置在所述背板10上，所述灯板20(如图2中的第一灯板21和第二灯板22)包括至少两个间隔设置的光源组(如图2中的第一光源组211或第二光源组221)，每个所述光源组包括至少两个沿第二方向Y设置的光源(如图2中的第一光源212或第二光源222)，所述光源包括mini LED等。所述灯板20还包括驱动基板50，所述光源设置在所述驱动基板50上，所述驱动基板50用于驱动所述光源发光。其中，所述第一方向X和所述第二方向Y相互垂直，可选地，所述第一方向X为水平方向，所述第二方向Y为竖直方向，或者所述第一方向X为竖直方向，所述第二方向Y为水平方向，当然本申请不限于此，本申请的所述第一方向X和所述第二方向Y还可成其他预设夹角设置，比如预设夹角为45度或60度等。\n\n[0035]其中在同一灯板20上，相邻的两个所述光源组之间的间隔L1与相邻的两个光源L2之间的间隔相等，如此使得同一灯板20上的所有相邻光源之间的间隔均相等，这样在所述灯板20上设置光源时能够简化工艺，而且使得所述灯板20整个出光面的出光更为均匀，避免同一灯板20上不同区域的亮度不均。比如在灯板20上设置mini LED光源时，通常需要先在转移基板上制备mini LED芯片，然后采用打件、巨量转移等转移技术把mini LED芯片转移到驱动基板50上形成灯板20，所述驱动基板50包括玻璃基板或PCB板等。当然地，所述驱动基板50上需要设置驱动电路，以驱动所述mini LED芯片发光。而当把mini LED芯片等间距的转移到所述驱动基板50上与对应的驱动电路连接，明显可以降低转移工艺的难度，提高转移效率。\n\n[0036]下面将以沿第一方向X相邻拼接设置的灯板20为第一灯板21和第二灯板22为例具体阐述本申请的拼接灯板结构。\n\n[0037]如图2所示，所述第一灯板21上间隔设置有两个第一光源组211，每个所述第一光源组211包括两个沿第二方向Y设置的第一光源212；所述第二灯板22上间隔设置有两个第二光源组221，每个所述第二光源组221包括两个沿第二方向Y设置的第二光源222。需要说明的是，本实施例图2示意出的灯板数量、灯板上的光源组数量以及光源组中光源的数量仅用于说明本申请的灯板结构，而本申请的灯板数量、灯板上的光源组数量以及光源组中光源的数量具体根据实际需求进行配置，比如灯板的数量取决于受工艺限制灯板的尺寸以及实际产品的尺寸等。\n\n[0038]所述第一灯板21和所述第二灯板22拼接在一块，在相互拼接的位置形成一拼接区PD，所述拼接区PD是指所述第一灯板21上靠近拼接位置的第一光源组211与所述第二灯板22上的靠近拼接位置的第二光源组221之间的区域，也即相邻的所述第一光源组211和所述第二光源组221之间的区域。所述第一灯板21和所述第二灯板22拼接后，在所述拼接区PD会形成一条细小的拼缝60，所述拼缝60的存在容易导致在拼接区PD出现亮度不均，从而影响显示产品的显示品味。\n\n[0039]而灯板上通常会设置反射片，使得灯板上的光源发出的光线经过反射片的反射后，出光更为均匀，且能提高光线的利用率。考虑到拼缝导致的亮度不均，把反射片延伸到灯板的拼接区与相邻灯板上的反射片搭接，用反射片遮挡住所述拼缝，以此改善因所述拼缝导致的亮度不均。\n\n[0040]但发明人在研究中发现如此设计会导致另外一个问题，在拼接区搭接的反射片在搭接位置存在凸起结构，凸起结构和平整的反射片对光线的反射效果不同，使得拼接区还是存在亮度不均，尤其地，对于拼接区亮度大于灯板其他区域亮度的情况，影响更大。比如灯板的控制端(如驱动IC等)通常位于灯板的非拼接区，而设置在灯板上且与控制端连接的各种走线一般会分布在灯板的拼接侧，并从拼接侧向灯板中间区域延伸。由于电压降的存在，灯板边缘的亮度会大于灯板中间区域的亮度，使得灯板拼接区的亮度大于灯板其他区域的亮度，导致拼接区亮度不均。而拼接区反射片凸起结构的存在会加剧拼接区亮度不均的情况。\n\n[0041]为此，发明人找到了一种解决方案：继续参照图2和图3，所述灯板20上还设置有沿第一方向X搭接设置的多个反射片30(如图2中的第一反射片31和第二反射片32)，相邻反射片30的搭接区DD位于同一灯板20内相邻光源组之间。\n\n[0042]具体地，所述第一灯板21上设置有第一反射片31，所述第二灯板22上设置有第二反射片32，所述第一反射片31延伸至所述第二灯板22与所述第二反射片32搭接。更具体地，所述第一反射片31跨过所述拼接区PD，并与所述第二反射片32在所述第二灯板22上相邻的所述第二光源组221之间搭接，形成所述第一反射片31和所述第二反射片32的搭接区DD。在所述搭接区DD，所述第一反射片31和所述第二反射片32存在部分重叠区域，使得所述第一反射片31和所述第二反射片32的搭接位置呈凸起结构314，形成高度差。该高度差通常可在0.3mm左右，也即相当于所述第一反射片31或所述第二反射片32的厚度。\n\n[0043]需要说明的是，所述第一灯板21上的所述第一反射片31在靠近拼接区PD的一侧超出所述第一灯板21的边界，所述第二灯板22上的所述第二反射片32在靠近拼接区PD的一侧未覆盖所述第二灯板22的边缘，也即所述第一反射片31和所述第二反射片32在拼接区PD不存在重叠。但所述第一反射片31远离拼接区PD的一侧是否与所述第一灯板21边界平齐取决于沿所述第一方向X拼接设置的灯板20的数量以及所述第一灯板21在沿所述第一方向X拼接设置的灯板20中的位置。\n\n[0044]比如沿所述第一方向X拼接设置的灯板20的数量为两个时，所述第一反射片31远离拼接区PD的一侧与所述第一灯板21边界平齐。沿所述第一方向X拼接设置的灯板20的数量为三个或三个以上时，当所述第一灯板21位于拼接设置的多个灯板20的边缘时，所述第一反射片31远离拼接区PD的一侧与所述第一灯板21边界平齐；当还有其他灯板(除了所述第二灯板22)与所述第一灯板21拼接时，所述第一反射片31远离拼接区PD的一侧未覆盖所述第一灯板21的边界。\n\n[0045]相对应地，所述第二反射片32远离拼接区PD的一侧是否超出所述第二灯板22的边界也同样取决于沿所述第一方向X拼接设置的灯板20的数量以及所述第二灯板22在沿所述第一方向X拼接设置的灯板20中的位置，在此不再赘述。\n\n[0046]另外，相邻灯板20的拼接区PD位于同一反射片30的非搭接区DD内，同一反射片30是指相邻灯板20的拼接区PD对应的反射片30。比如，所述第一灯板21和所述第二灯板22的拼接区PD对应的反射片30为所述第一反射片31，则所述第一灯板21和所述第二灯板22的拼接区PD位于所述第一反射片31的非搭接区DD。如此所述第一反射片31和所述第二反射片32在所述搭接区DD形成的凸起结构314就会远离所述第一灯板21和所述第二灯板22的拼接区PD，解决了反射片搭接区位于拼接区导致拼接区亮度不均的问题。\n\n[0047]进一步地，所述第一反射片31在对应所述第一灯板21上的第一光源组211的位置设置有第一开孔311，所述第二反射片32在对应所述第二灯板22上的第二光源222的位置设置有第二开孔312，所述第一开孔311的面积大于所述第一光源组211的面积，以裸露出所述第一光源212；所述第二开孔312的面积大于所述第二光源222的面积，以裸露出所述第二光源222。其中所述反射片30上的开孔(如第一反射片31上的第一开孔311)的面积是指所述开孔的开口面积，所述光源(如所述第一光源组211、所述第二光源222)的面积是指所述光源在灯板20上的正投影面积。\n\n[0048]可选地，为了降低工艺难度，所述第一光源212和所述第二光源222的规格相同，如此在转移工艺中可以采用相同的转移方案和设备，且使得灯板20拼接形成的背光的整个出光面的出光更均匀，以减小不同灯板20之间的亮度差异。当所述第一光源212和所述第二光源222的规格相同时，所述第一反射片31上的第一开孔311的面积与所述第二反射片32上的第二开孔312的面积相等。\n\n[0049]同时，所述第一反射片31在对应所述第二灯板22上的第二光源222的位置设置有第三开孔313，所述第三开孔313的面积大于所述第二开孔312的面积。具体地，所述第一反射片31跨过拼接区PD并朝所述第一方向X延伸，且在所述第二灯板22上相邻的第二光源组221之间与所述第二反射片32搭接，故所述第一反射片31还会跨过至少一组第二光源组221，所述第一反射片31在对应跨过的第二光源组221内的每个第二光源222处均需设置一个第三开孔313，以裸露出对应的所述第二光源222。\n\n[0050]而所述第一反射片31与所述第二反射片32的搭接是在所述第一灯板21和所述第二灯板22拼接后或拼接时进行的，为了使所述第一反射片31能够顺畅的跨过所述第二光源组221内的第二光源222与所述第二反射片32搭接，所述第一反射片31上的第三开孔313需大于所述第二反射片32上的第二开孔312，以使得所述第一反射片31在搭接时不会与对应的所述第二光源222发生干涉。\n\n[0051]进一步地，所述第一反射片31以及所述第二反射片32的厚度均小于对应的所述光源的高度。比如所述第一反射片31的厚度小于所述第一光源212的高度，所述第二反射片32的厚度小于所述第二光源222的高度。同时由于所述第一反射片31在对应所述第一光源212的位置设置有第一开孔311，在对应所述第二光源222的位置设置有第三开孔313，所述第二反射片32在对应所述第二光源222的位置设置有第二开孔312，使得所述第一光源212可穿过所述第一开孔311并超出所述第一反射片31的高度，所述第二光源222可穿过所述第二开孔312和所述第三开孔313并超出所述第二反射片32的高度，且所述第二光源222的高度还大于所述第一反射片31和所述第二反射片32搭接处凸起结构314的高度。如此，所述第一光源组211和所述第二光源222向四周发射的光线均会照射到对应的反射片30上，并被反射片30反射至所述扩散片40上，大大提高了光源发出的光线的利用率。\n\n[0052]所述扩散片40具有扩散光线的作用，使经过所述扩散片40的光线以均匀的面光源出射。可选地，所述扩散片40可把散射粒子分散在树脂等基材中形成，当光线穿过所述扩散片40时，由于扩散片40中具有折射率相异的介质，会使得光线发生许多折射、反射与散射的现象，可把光线修正成均匀面光源，以达到光学扩散的效果。\n\n[0053]在一种实施例中，请参照图4，图4为本申请实施例提供的灯板拼接的另一种俯视结构示意图。与上述实施例不同的是，所述第二灯板22上的第二光源组221的数量至少为3，所述第一反射片31和所述第二反射片32的搭接区DD位于靠近所述第一灯板21和所述第二灯板22拼接区PD的相邻两个第二光源组221之间。\n\n[0054]把所述第一反射片31和所述第二反射片32的搭接区DD设置在靠近拼接区PD的第二光源组221之间，使得所述第一反射片31仅需跨过一个所述第二光源组221，这样在所述第一反射片31上也仅需设置少量的第三开孔313即可，降低了所述第一反射片31工艺难度。同时也使得所述第一反射片31和所述第二反射片32的搭接更简单，降低了搭接的工艺难度。另外，采用如此搭接方式，所述第一反射片31也无需超出所述第一灯板21的边界过多，可提高所述第一反射片31的稳定性。其他说明请参照上述实施例，在此不再赘述。\n\n[0055]在一种实施例中，请结合参照图1和图5，图5为本申请实施例提供的灯板拼接的又一种俯视结构示意图。与上述实施例不同的是，所述背光模组100还包括沿第二方向Y拼接设置在所述背板10上的多个灯板20，所述灯板20包括至少两个间隔设置的光源组，每个所述光源组包括至少两个沿第一方向X设置的光源；沿第二方向Y搭接设置的多个用于反射光线的反射片30，相邻反射片30的搭接区DD位于同一灯板20内相邻光源组之间；其中，相邻灯板20的拼接区PD位于同一反射片30的非搭接区DD内。\n\n[0056]具体地，本实施例仍以沿第二方向Y相邻拼接设置的灯板20为第一灯板21’和第二灯板22’为例具体阐述本申请的拼接灯板结构。所述背光模组100的背光包括沿第一方向X相邻拼接设置的第一灯板21和第二灯板22，以及沿第二方向Y相邻拼接设置的第一灯板21’和第二灯板22’，其中所述第一灯板21’和所述第一灯板21为同一块灯板，所述第二灯板22’和所述第二灯板22为不同块灯板。当然，本实施例仅以图5示意的由4块灯板纵横拼接成所述背光模组100的背光为例说明，本申请不限于此，本申请的所述背光模组100的背光可以由更多的灯板20拼接而成，具体拼接灯板20的数量取决于灯板20的尺寸、显示产品的尺寸以及显示产品的形状等。\n\n[0057]所述第一灯板21’上间隔设置有两个第一光源组211’，每个所述第一光源组211’包括两个沿第二方向Y设置的第一光源212’；所述第二灯板22’上间隔设置有两个第二光源组221’，每个所述第二光源组221’包括两个沿第二方向Y设置的第二光源222’。\n\n[0058]进一步地，所述第一灯板21’上设置有第一反射片31’，所述第二灯板22’上设置有第二反射片32’，所述第一反射片31’延伸至所述第二灯板22’与所述第二反射片32’搭接。所述第一灯板21’和所述第二灯板22’的拼接区PD位于所述第一反射片31’的非搭接区DD。如此所述第一反射片31’和所述第二反射片32’在所述搭接区DD形成的凸起结构就会远离所述第一灯板21’和所述第二灯板22’的拼接区PD，解决了反射片搭接区位于拼接区导致拼接区亮度不均的问题。\n\n[0059]所述第一反射片31’在对应所述第一灯板21’上的第一光源212’的位置设置有第一开孔311’，所述第二反射片32’在对应所述第二灯板22’上的第二光源222’的位置设置有第二开孔312’，所述第一开孔311’的面积大于所述第一光源212’的面积，以裸露出所述第一光源212’；所述第二开孔312’的面积大于所述第二光源222’的面积，以裸露出所述第二光源222’。\n\n[0060]所述第一反射片31’在对应所述第二灯板22’上的第二光源222’的位置设置有第三开孔313’，所述第三开孔313’的面积大于所述第二开孔312’的面积。具体地，所述第一反射片31’跨过拼接区PD并朝所述第一方向X延伸，且在所述第二灯板22’上相邻的第二光源组221’之间与所述第二反射片32’搭接，故所述第一反射片31’还会跨过至少一组第二光源组221’，所述第一反射片31’在对应跨过的第二光源组221’内的每个第二光源222’处均需设置一个第三开孔313’，以裸露出对应的所述第二光源222’。其他说明请参照上述实施例，在此不再赘述。\n\n[0061]在一种实施例中，请结合参照图1至图6，图6为本申请实施例提供的灯板拼接的再一种剖面结构示意图。与上述实施例不同的是，所述第一灯板21和所述第二灯板22的拼接区PD内的拼缝60内设置有支撑柱70，所述支撑柱70从所述拼缝60穿过并超出灯板(如第一灯板21和第二灯板22)上光源(如第一光源212和第二光源222)的高度，用于支撑灯板上方的扩散片40以及其他光学膜片，同时所述支撑柱70还能够防止所述第一灯板21和所述第二灯板22之间光源的混光。其他说明请参照上述实施例，在此不再赘述。\n\n[0062]在一种实施例中，请参照图7，图7为本申请实施例提供的显示装置的剖面结构示意图。所述显示装置1000包括前述实施例其中之一的背光模组100、与所述背光模组100相对设置的显示面板200以及设置在所述显示面板200远离所述背光模组100一侧的盖板等。所述背光模组100为所述显示面板200提供背光，所述显示面板200包括相对设置的第一基板11和第二基板12、设置在第一基板11和第二基板12之间的多个液晶分子13、贴附于所述第一基板11面向背光模组100的下偏光片14以及贴附于所述第二基板12远离所述第一基板11一侧的上偏光片15，其中所述第一基板11为阵列基板，所述第二基板12为彩膜基板。\n\n[0063]根据上述实施例可知：\n\n[0064]本申请提供一种背光模组和显示装置，该背光模组的背板上的多个灯板相互拼接形成有拼接区，每个灯板上还设置有反射片，相邻两个反射片的搭接区设置在同一灯板上的光源组之间，通过把相邻反射片的搭接区设置在非拼接区，使得搭接区的反射片凸起不会把过多的光线反射至拼接区而造成拼接区亮度不均，解决了现有显示产品的灯板拼接处存在亮度不均的问题。\n\n[0065]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0066]以上对本申请实施例进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10956, 24010, '【技术领域】\n\n[0001]本发明涉及显示技术领域，具体涉及一种显示面板。\n\n【背景技术】\n\n[0002]随着显示技术的发展，越来越多的应用功能场景需要更大显示面积的显示装置，传统的具有单块显示面板的显示装置无法满足该要求，由多块显示面板拼接而成的显示装置由此产生，即屏接屏技术。现有的屏接屏技术一般是将多个有机电致发光显示面板(Organic Light-E mitting Diode，OLED)拼接在一起，以满足屏幕互相拼接、协同显示的需求。\n\n[0003]然而，由于有机电致发光显示面板中发光层的有机材料对水(H2O)和氧气(O2)敏感，在发光层制作完成之后，需要在采用其他材料对其进行封装，即封装材料需要超出发光有效区(Active Area，AA区)范围之外。为了进一步减小非显示的边界(Border)区域，现有的屏接屏技术多采用窄化边界的方法，通过将面板(Panel)的左右边界极致窄化，来获得非常狭窄的四边边界，再将这种特殊的小面板拼接成大尺寸面板，达成拼接显示的目的。受限于发光层的这一特性，有机电致发光显示面板的边界区域可以减窄，但必不可少，因此现有的屏接屏技术虽然可实现多块屏幕联合显示，但屏幕与屏幕之间始终会存在边框的影响，保留有非显示区，表现在大屏幕上，就会出现一条又一条黑线，无法真正实现“无缝化”。\n\n[0004]因此，现有技术存在缺陷，有待改进与发展。\n\n【发明内容】\n\n[0005]本发明提供了一种显示面板，能消除拼接显示面板显示画面中的黑线，从而实现屏接屏技术的“无缝化”，提高显示面板的显示品质。\n\n[0006]为了解决上述问题，本发明提供了一种显示面板，显示面板包括拼接设置的多个子显示面板，显示面板还包括多个显示区域和位于多个显示区域之间的拼接区域，多个子显示面板包括位于显示区域的第一子显示面板和位于拼接区域的第二子显示面板，其中，第二子显示面板包括micro LED或mini LED。\n\n[0007]其中，第一子显示面板包括有机电致发光显示面板。\n\n[0008]其中，显示面板还包括覆盖多个有机电致发光显示面板上侧的封装层。\n\n[0009]其中，第一子显示面板包括micro LED或mini LED。\n\n[0010]其中，多个子显示面板呈阵列式排布。\n\n[0011]其中，第二子显示面板围绕第一子显示面板设置。\n\n[0012]其中，第二子显示面板包括依次层叠设置的多个像素单元和控制对应的像素单元的薄膜晶体管单元，其中，像素单元在薄膜晶体管单元上的投影完全位于薄膜晶体管单元的区域内。\n\n[0013]其中，像素单元的宽度不大于薄膜晶体管单元的宽度，且像素单元的长度不大于薄膜晶体管单元的长度。\n\n[0014]其中，显示面板还包括栅极驱动电路，栅极驱动电路在显示区域垂直投影内，其中，垂直的方向包括与垂直显示区域方向平行的方向。\n\n[0015]其中，显示面板还包括扇出区，扇出区与栅极驱动电路电连接，扇出区在显示区域垂直投影内。\n\n[0016]本发明的有益效果是：区别于现有技术，本发明提供了一种显示面板，显示面板包括拼接设置的多个子显示面板，显示面板还包括多个显示区域和位于多个显示区域之间的拼接区域，多个子显示面板包括位于显示区域的第一子显示面板和位于拼接区域的第二子显示面板，其中，第二子显示面板包括micro LED或mini LED，通过利用设置在第一子显示面板外侧的micro LED或mini LED自封装的特性，以消除拼接显示面板显示画面中的黑线，从而实现屏接屏技术的“无缝化”，提高显示面板的显示品质。\n\n【附图说明】\n\n[0017]图1为现有的屏接屏显示面板的结构示意图；\n\n[0018]图2为OLED的封装膜层结构示意图；\n\n[0019]图3为本发明实施例提供的显示面板的结构示意图；\n\n[0020]图4为OLED的子像素的结构示意图；\n\n[0021]图5为OLED的膜层结构示意图；\n\n[0022]图6为micro LED或mini LED的子像素的结构示意图；\n\n[0023]图7为micro LED或mini LED的膜层结构示意图；\n\n[0024]图8为本发明实施例提供的一种包括栅极驱动电路的显示面板的结构示意图；\n\n[0025]图9为本发明实施例提供的另一种包括栅极驱动电路的显示面板的结构示意图。\n\n【具体实施方式】\n\n[0026]下面结合附图和实施例，对本发明作进一步的详细描述。特别指出的是，以下实施例仅用于说明本发明，但不对本发明的范围进行限定。同样地，以下实施例仅为本发明的部分实施例而非全部实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0027]另外，本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在各个附图中，结构相似的单元采用相同的附图标记来表示。为了清楚起见，附图中的各个部分没有按比例绘制。此外，附图中可能未示出某些公知的部分。\n\n[0028]为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图，对本发明进行进一步详细说明。\n\n[0029]随着显示技术的发展，越来越多的应用功能场景需要更大显示面积的显示装置，传统的具有单块显示面板的显示装置无法满足该要求，由多块显示面板拼接而成的显示装置由此产生，即屏接屏技术。如图1所示，为现有技术的屏接屏显示面板100的结构示意图，显示面板100由多块子显示面板110和拼接在子显示面板110四周的封装材料120组成，子显示面板110一般是有机电致发光显示面板(Organic Light-Emitting Diode，OLED)，通过将多个有机电致发光显示面板拼接在一起，以满足屏幕互相拼接、协同显示的需求。\n\n[0030]如图2所示，为OLED的封装膜层结构示意图，一般情况下，现有的有机电致发光显示面板的封装膜层结构从下到上包括依次层叠设置的阳极111(英文名称为Anode)、空穴传输层112(英文名称为Hole Transfer Layer，HTL)、发光层113(英文名称为EmittingLayer，EML)、电子传输层114(英文名称为Electron Transfer Layer，ETL)、阴极115(英文名称为Cathode)和封盖层116(英文名称为Capping Layer，CPL)。阳极111或者阴极115中至少一个需要是透明的，以便使发光层113发出的光透过。通常情况下，选取阳极111作为透明电极，比如，阳极111的材料为氧化铟锡(Indium Tin Oxide，ITO)，当然，也可以选取阴极115作为透明电极，具体不作限制。当发光层发光并向外传播时，在金属/介质界面附件会存在表面等离极化激元效应，这个效应导致出射光效率降低，通过在阴极115上设置一层封盖层116可以改善这种效应。\n\n[0031]其中，阳极111要进行空穴注入，在阳极111中的载流子是空穴，带正电，而阴极115要进行电子注入，在阴极115中的载流子是电子，带负电。空穴传输层112用于传输从阳极111流入的空穴到达发光层113和阻挡发光层113流入的电子到达阳极111，而电子传输层114用于传输从阴极115流入的电子到达发光层113和阻挡发光层113流入的空穴到达阴极115。有机电致发光显示面板的发光过程包括：当在阳极111和阴极115施加适当的电压时，电子和空穴克服界面能垒后，经由阴极115和阳极111注入，电子和空穴分别经由电子传输层114和空穴传输层112迁移到发光层113，电子和空穴在发光层113内互相复合，形成处于激发态的激子，激子将能量传递给发光层113的有机发光分子，并激发有机发光分子的电子从基态跃迁到激发态，激发态的电子释放能量回到稳定的基态，产生辉光放电，从而实现电致发光。\n\n[0032]然而，由于有机电致发光显示面板的发光层113中的有机材料对水(H2O)和氧气(O2)敏感，在发光有效区(即如图2所示的A1区域)制作完成之后，需要在采用其他材料对其进行封装，即封装材料120(即如图2所示的A2区域)需要超出发光有效区范围之外。为了进一步减小非显示区的边界(Border)区域，现有的屏接屏技术多采用窄化边界的方法，通过将显示面板(Panel)的左右边界极致窄化，来获得非常狭窄的四边边界，再将这种特殊的显示面板拼接成大尺寸显示面板，以实现拼接显示的目的。受限于发光层113的这一特性，有机电致发光显示面板的边界区域可以减窄，但必不可少，因此现有的屏接屏技术虽然可实现多块屏幕联合显示，但屏幕与屏幕之间始终会存在边框的影响，保留有非显示区，表现在大屏幕上，就会出现一条又一条黑线，无法真正实现“无缝化”。\n\n[0033]基于现有技术所存在的问题，如图3所示，本发明提供了一种显示面板200，包括拼接设置的多个子显示面板210，显示面板200还包括多个显示区域(即第一子显示面板对应的区域，未在图中示出)和位于多个显示区域之间的拼接区域(即第二子显示面板对应的区域，未在图中示出)，多个子显示面板210包括位于显示区域的第一子显示面板220和位于拼接区域的第二子显示面板230，其中，第二子显示面板230包括micro LED或mini LED。\n\n[0034]如图4所示，为OLED的子像素的结构示意图，像素单元130包括红色子像素131、绿色子像素132和蓝色子像素133，红色子像素131和蓝色子像素133是不规则的形状，且红色子像素131和蓝色子像素133的数量是绿色子像素132数量的一半。为了保证在相同的分辨率的情形下降低子像素排列密度和降低成本，在有机电致发光显示面板中，采用的是Pentile RGB排列方式(如图3所示的子像素排列方式)，而Pentile RGB排列的单个像素点只有“红绿”或者“蓝绿”两个子像素点组成。在实际的显示图像时，Pentile RGB排列的一个像素点会“借用”与其相邻的像素点的另一种颜色来构成三基色，即每个像素和相邻的像素共享自己所不具备的那种颜色的子像素，通过调节子像素点和相邻的像素的发光比例以及亮度可以发出不同颜色的光线。\n\n[0035]基于图4所示的子像素的结构示意图，如图5所示，为OLED的膜层结构示意图，包括红色子像素131、绿色子像素132和蓝色子像素133的像素单元130位于依次层叠设置的薄膜晶体管单元140和基板150上，为了保障发光强度，像素单元130的尺寸一般略大于相对应的薄膜晶体管单元140的尺寸，当第二子显示面板230为有机电致发光显示面板时，位于拼接区域的第二子显示面板230由于像素单元130的尺寸大于薄膜晶体管的尺寸，导致拼接区域的像素单元130之间的间距不能与显示区域的像素单元130之间的间距保持一致，无法保证拼接区域与显示区域的像素单元130的衔接连贯性，在屏幕拼接时空间受限，无法实现无缝拼接。\n\n[0036]不同于如图4所示的子像素的结构示意图，如图6所示，为micro LED或mini LED的子像素的结构示意图，与有机电致发光显示面板的Pentile RGB排列方式不同，micro LED或mini LED采用的是标准的RGB排列方式，像素单元240包括红色子像素241、绿色子像素242和蓝色子像素243，每个子像素的大小一致，且数量相同，通过调节三个子像素的发光比例以及亮度可以发出不同颜色的光线。\n\n[0037]基于图6所示的子像素的结构示意图，如图7所示，为micro LED或mini LED的结构示意图，包括红色子像素241、绿色子像素242和蓝色子像素243的像素单元240位于依次层叠设置的薄膜晶体管单元250和基板260上。不同与有机电致发光显示面板，micro LED或mini LED是一种无机金属半导体或无机发光二极管，其本质上是由一个个像素级别的有机灯泡组成的。由于第二子显示面板230为micro LED或mini LED，不同于有机电致发光显示面板需要对整个有效发光区进行封装，而micro LED或mini LED是基于自封装技术，即micro LED或mini LED针对的是单颗子像素进行封装，不需要额外的封装设计，因此边界的尺寸可以减小至零，克服了有机电致发光显示面板的整面封装带来边界的影响，使拼接区域最外侧的像素单元240的间距也可以和显示区域的像素单元240的间距保持一致，从而实现“无缝”拼接。\n\n[0038]此外，第一子显示面板220与第二子显示面板230的拼接方式可以采用胶水粘合，比如采用光学胶(Optical Clear Adhesive，OCA)，一种透明的光学胶粘剂，光透过率达到90％以上，胶接强度良好，可在室温或者中温下固化，用于胶结透明光学元件的特种粘胶剂，广泛应用于显示技术领域，或者采用压敏胶(Pressure Sensitive Adhesives，PSA)，一种同时具备着液体的粘性性质和固体的弹性性质的粘弹性体，透明性好，也可以采用其它的拼接方式，只要能实现第一显示面板和第二显示面板的拼接即可，具体不作限制。\n\n[0039]其中，第一子显示面板220包括有机电致发光显示面板。\n\n[0040]具体地，第二子显示面板230可以是需要对整面的发光有效区进行封装的有机电致发光显示面板，当第一子显示面板220是有机电致发光显示面板，通过在第一子显示面板220外侧的拼接区域设置第二子显示面板230，利用micro LED或mini LED的自封装的特性，一方面对第一子显示面板220的发光有效区进行封装，以防止水氧进入对有机电致发光显示面板产生影响，另一方面，利用micro LED或mini LED的自封装的特性，以消除拼接显示面板显示画面中的黑线，从而实现屏接屏技术的“无缝化”，提高显示面板的显示品质。\n\n[0041]其中，显示面板还包括覆盖多个有机电致发光显示面板上侧的封装层。\n\n[0042]具体地，当第一子显示面板220是有机电致发光显示面板，通过在第一子显示面板220外侧的拼接区域设置第二子显示面板230，在实现无缝拼接的同时对有机电致发光显示面板的外侧封装，以防止水氧进入有机电致发光显示面板的外侧。为了防止有机电致发光显示面板的顶部受水氧的影响，还可以在多个有机电致发光显示面板上侧设置封装层，通过封装层保护有机电致发光显示面板的上侧不受水氧的影响。其中，封装层(Thin-FilmEncapsulation，TFE)可以通过原子层沉积(ALD)和喷墨打印(IJP)等方式在有机电致发光显示面板的顶部生成，以防止有机电致发光显示面板的顶部受水氧的影响，从而提升显示面板的显示品质。\n\n[0043]其中，第一子显示面板220包括micro LED或mini LED。\n\n[0044]具体地，当第一子显示面板220是micro LED或mini LED，即第一子显示面板220和第二显示面板相同，都是micro LED或mini LED，可以直接将第一子显示面板220和第二子显示面板230做成micro LED或mini LED，也可以通过拼接的方式在分别完成的第一子显示面板220外侧设置第二子显示面板230，具体不作限制。此外，如上文所述，拼接的方式可以通过胶水粘合的方式，比如采用光学胶，或者采用压敏胶，也可以采用其它的拼接方式，只要能实现第一显示面板和第二显示面板的拼接即可，具体不作限制。通过在第一子显示面板220外侧的拼接区域设置第二子显示面板230，利用micro LED或mini LED的自封装的特性，以消除拼接显示面板显示画面中的黑线，从而实现屏接屏技术的“无缝化”，提高显示面板的显示品质。\n\n[0045]其中，多个子显示面板呈阵列式排布。\n\n[0046]如图3所示，为本发明实施例提供的显示面板的结构示意图，通过采用多个子显示面板呈阵列式排布，以形成一个“无缝”拼接的大尺寸显示面板，从而实现屏幕互相拼接、协同显示的需求。此外，还也可以采用其它方式进行排布，比如采用多个子显示面板形成一个很宽的单行排布的显示面板，或者采用多个子显示面板形成一个很长的单列排布的显示面板，或者采用特殊的图形来排布，比如“米”字型或者其它花型等，具体不作限制。\n\n[0047]其中，第二子显示面板230围绕第一子显示面板220设置。\n\n[0048]如图3所示，第二子显示面板230围绕第一子显示面板220设置，即第二子显示面板230位于第一子显示面板220外侧的四周分布，通过采用第二子显示面板230围绕第一子显示面板220设置，利用为micro LED或mini LED的第二子显示面板230，一方面对第二子显示面板230的四周进行封装，以防止水氧进入对第二子显示面板230产生影响，另一方面，利用micro LED或mini LED的自封装的特性，以消除拼接显示面板显示画面中的黑线，从而实现屏接屏技术的“无缝化”，提高显示面板的显示品质。此外，不同于第一子显示面板220的外侧四周都需要拼接的方案，当第一子显示面板220外侧的某一侧或多侧需要拼接时，第二显示面板还可以位于第一子显示面板220外侧的某一侧或者多侧，只要能实现对第二子显示面板230的进行封装，以消除拼接显示面板显示画面中的黑线，从而实现屏接屏技术的“无缝化”即可，具体不作限制。\n\n[0049]其中，第二子显示面板230包括依次层叠设置的多个像素单元240和控制对应的像素单元240的薄膜晶体管单元250，其中，像素单元240在薄膜晶体管单元250上的投影完全位于薄膜晶体管单元250的区域内。\n\n[0050]如图7所示，第二子显示面板230包括从上到下依次层叠设置的多个像素单元240、控制对应的像素单元240的薄膜晶体管单元250和基板260，且像素单元240在薄膜晶体管单元250上的投影完全位于薄膜晶体管单元250的区域内，即像素单元240的尺寸不大于薄膜晶体管单元250的尺寸。当第二子显示面板230的像素单元240的尺寸不大于薄膜晶体管单元250的尺寸时，可以实现位于拼接区域的像素单元的间距与显示区域的像素单元的间距保持一致，以保证最外侧的拼接区域的像素单元240的衔接连贯性，从而实现“无缝”拼接。\n\n[0051]其中，像素单元240的宽度不大于薄膜晶体管单元250的宽度，且像素单元240的长度不大于薄膜晶体管单元250的长度。\n\n[0052]具体地，如上文所述，像素单元240在薄膜晶体管单元250上的投影完全位于薄膜晶体管单元250的区域内，即薄膜晶体管单元250的区域可以完全覆盖像素单元240的区域，对应地，像素单元240的宽度不大于薄膜晶体管单元250的宽度，且像素单元240的长度不大于薄膜晶体管单元250的长度。通过采用第二子显示面板230的像素单元240的面积小于薄膜晶体管单元250的面积，可以实现位于拼接区域的第二子显示面板230的像素单元240之间的间距与第一子显示面板220的有效发光区的像素单元240的间距保持一致，从而实现“无缝”拼接。\n\n[0053]其中，显示面板300还包括栅极驱动电路320，栅极驱动电路320在显示区域310垂直投影内，其中，垂直的方向包括与垂直显示区域方向平行的方向。\n\n[0054]如图8所示，为本发明实施例提供的一种包括栅极驱动电路320的显示面板300的结构示意图，栅极驱动电路320在显示区域310垂直投影内，其中，垂直的方向为与垂直显示区域310方向平行的方向，如图8所示，水平的方向即与X方向平行的方向，竖直的方向即与Y方向平行的方向，而垂直的方向是指与X方向和Y方向形成的平面(即显示区域310形成的平面)垂直的方向，即与Z方向平行的方向，下文的垂直的方向与此相同，具体不再赘述。栅极驱动电路320(Gate On Array，GOA)，又称之为阵列行驱动电路，用于显示面板的逐行扫描驱动。在现有的显示装置中，由于各种驱动模组和电路板需要与显示面板进行绑定连接，显示装置上需要预留出足够的非显示区域以进行线路绑定，导致显示装置的非显示区域始终较大，不利于显示装置的窄边框化或无边框化。当栅极驱动电路320在显示区域310垂直投影内时，即栅极驱动电路320位于显示区域310的下方，可以与薄膜晶体管单元250同层设置，也可以与薄膜晶体管单元250非同层设置，具体不作限制。通过将栅极驱动电路在显示区域垂直投影内，以减小或者消除显示面板的非显示区域，有利于实现屏接屏技术的“无缝化”，提高显示面板的显示品质。\n\n[0055]其中，显示面板300还包括扇出区330，扇出区330与栅极驱动电路320电连接，扇出区330在显示区域310垂直投影内。\n\n[0056]具体地，如图8所示，显示面板300还包括扇出区330(AA fanout)，扇出区330是指，显示面板300的多条数据线呈扇形聚拢的区域，扇出区330一端与显示面板300的多条数据线电连接，一端与栅极驱动电路320电连接，以使栅极驱动电路320实现逐行扫描驱动。一般情况下，扇出区330位于显示面板300的非显示区域，不利于显示面板300的窄边框化或无边框化。当扇出区330在显示区域310垂直投影内时，即扇出区位于显示区域310的下方，扇出区330可以与栅极驱动电路320同层设置，也可以与栅极驱动电路320非同层设置，只要扇出区330位于显示区域310的下方即可，具体不作限制。通过将扇出区330设置在显示区域310垂直投影内，以进一步减小或者消除显示面板的非显示区域。\n\n[0057]此外，不同于图8所示的两个栅极驱动电路和与其相对应的两个扇出区330位于显示区域310的下方的方案，如图9所示，为本发明实施例提供的另一种包括栅极驱动电路的显示面板的结构示意图，显示面板400仅设有一条栅极驱动电路420和与其相对应的扇出区430，且栅极驱动电路420和与其相对应的扇出区430都在显示区域410垂直投影内，以进一步减少显示面板400的非显示区域的面积，从而提高显示面板400的集成度，有利于实现屏接屏技术的“无缝化”。\n\n[0058]由上述可知，本发明提供了一种显示面板，显示面板包括拼接设置的多个子显示面板，显示面板还包括多个显示区域和位于多个显示区域之间的拼接区域，多个子显示面板包括位于显示区域的第一子显示面板和位于拼接区域的第二子显示面板，其中，第二子显示面板包括micro LED或mini LED，通过利用设置在第一子显示面板外侧的micro LED或mini LED自封装的特性，以消除拼接显示面板显示画面中的黑线，从而实现屏接屏技术的“无缝化”，提高显示面板的显示品质。\n\n[0059]以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。', '【技术领域】\n\n[0001]本发明涉及显示技术领域，具体涉及一种显示面板。\n\n【背景技术】\n\n[0002]随着显示技术的发展，越来越多的应用功能场景需要更大显示面积的显示装置，传统的具有单块显示面板的显示装置无法满足该要求，由多块显示面板拼接而成的显示装置由此产生，即屏接屏技术。现有的屏接屏技术一般是将多个有机电致发光显示面板(Organic Light-E mitting Diode，OLED)拼接在一起，以满足屏幕互相拼接、协同显示的需求。\n\n[0003]然而，由于有机电致发光显示面板中发光层的有机材料对水(H2O)和氧气(O2)敏感，在发光层制作完成之后，需要在采用其他材料对其进行封装，即封装材料需要超出发光有效区(Active Area，AA区)范围之外。为了进一步减小非显示的边界(Border)区域，现有的屏接屏技术多采用窄化边界的方法，通过将面板(Panel)的左右边界极致窄化，来获得非常狭窄的四边边界，再将这种特殊的小面板拼接成大尺寸面板，达成拼接显示的目的。受限于发光层的这一特性，有机电致发光显示面板的边界区域可以减窄，但必不可少，因此现有的屏接屏技术虽然可实现多块屏幕联合显示，但屏幕与屏幕之间始终会存在边框的影响，保留有非显示区，表现在大屏幕上，就会出现一条又一条黑线，无法真正实现“无缝化”。\n\n[0004]因此，现有技术存在缺陷，有待改进与发展。\n\n【发明内容】\n\n[0005]本发明提供了一种显示面板，能消除拼接显示面板显示画面中的黑线，从而实现屏接屏技术的“无缝化”，提高显示面板的显示品质。\n\n[0006]为了解决上述问题，本发明提供了一种显示面板，显示面板包括拼接设置的多个子显示面板，显示面板还包括多个显示区域和位于多个显示区域之间的拼接区域，多个子显示面板包括位于显示区域的第一子显示面板和位于拼接区域的第二子显示面板，其中，第二子显示面板包括micro LED或mini LED。\n\n[0007]其中，第一子显示面板包括有机电致发光显示面板。\n\n[0008]其中，显示面板还包括覆盖多个有机电致发光显示面板上侧的封装层。\n\n[0009]其中，第一子显示面板包括micro LED或mini LED。\n\n[0010]其中，多个子显示面板呈阵列式排布。\n\n[0011]其中，第二子显示面板围绕第一子显示面板设置。\n\n[0012]其中，第二子显示面板包括依次层叠设置的多个像素单元和控制对应的像素单元的薄膜晶体管单元，其中，像素单元在薄膜晶体管单元上的投影完全位于薄膜晶体管单元的区域内。\n\n[0013]其中，像素单元的宽度不大于薄膜晶体管单元的宽度，且像素单元的长度不大于薄膜晶体管单元的长度。\n\n[0014]其中，显示面板还包括栅极驱动电路，栅极驱动电路在显示区域垂直投影内，其中，垂直的方向包括与垂直显示区域方向平行的方向。\n\n[0015]其中，显示面板还包括扇出区，扇出区与栅极驱动电路电连接，扇出区在显示区域垂直投影内。\n\n[0016]本发明的有益效果是：区别于现有技术，本发明提供了一种显示面板，显示面板包括拼接设置的多个子显示面板，显示面板还包括多个显示区域和位于多个显示区域之间的拼接区域，多个子显示面板包括位于显示区域的第一子显示面板和位于拼接区域的第二子显示面板，其中，第二子显示面板包括micro LED或mini LED，通过利用设置在第一子显示面板外侧的micro LED或mini LED自封装的特性，以消除拼接显示面板显示画面中的黑线，从而实现屏接屏技术的“无缝化”，提高显示面板的显示品质。\n\n【附图说明】\n\n[0017]图1为现有的屏接屏显示面板的结构示意图；\n\n[0018]图2为OLED的封装膜层结构示意图；\n\n[0019]图3为本发明实施例提供的显示面板的结构示意图；\n\n[0020]图4为OLED的子像素的结构示意图；\n\n[0021]图5为OLED的膜层结构示意图；\n\n[0022]图6为micro LED或mini LED的子像素的结构示意图；\n\n[0023]图7为micro LED或mini LED的膜层结构示意图；\n\n[0024]图8为本发明实施例提供的一种包括栅极驱动电路的显示面板的结构示意图；\n\n[0025]图9为本发明实施例提供的另一种包括栅极驱动电路的显示面板的结构示意图。\n\n【具体实施方式】\n\n[0026]下面结合附图和实施例，对本发明作进一步的详细描述。特别指出的是，以下实施例仅用于说明本发明，但不对本发明的范围进行限定。同样地，以下实施例仅为本发明的部分实施例而非全部实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0027]另外，本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在各个附图中，结构相似的单元采用相同的附图标记来表示。为了清楚起见，附图中的各个部分没有按比例绘制。此外，附图中可能未示出某些公知的部分。\n\n[0028]为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图，对本发明进行进一步详细说明。\n\n[0029]随着显示技术的发展，越来越多的应用功能场景需要更大显示面积的显示装置，传统的具有单块显示面板的显示装置无法满足该要求，由多块显示面板拼接而成的显示装置由此产生，即屏接屏技术。如图1所示，为现有技术的屏接屏显示面板100的结构示意图，显示面板100由多块子显示面板110和拼接在子显示面板110四周的封装材料120组成，子显示面板110一般是有机电致发光显示面板(Organic Light-Emitting Diode，OLED)，通过将多个有机电致发光显示面板拼接在一起，以满足屏幕互相拼接、协同显示的需求。\n\n[0030]如图2所示，为OLED的封装膜层结构示意图，一般情况下，现有的有机电致发光显示面板的封装膜层结构从下到上包括依次层叠设置的阳极111(英文名称为Anode)、空穴传输层112(英文名称为Hole Transfer Layer，HTL)、发光层113(英文名称为EmittingLayer，EML)、电子传输层114(英文名称为Electron Transfer Layer，ETL)、阴极115(英文名称为Cathode)和封盖层116(英文名称为Capping Layer，CPL)。阳极111或者阴极115中至少一个需要是透明的，以便使发光层113发出的光透过。通常情况下，选取阳极111作为透明电极，比如，阳极111的材料为氧化铟锡(Indium Tin Oxide，ITO)，当然，也可以选取阴极115作为透明电极，具体不作限制。当发光层发光并向外传播时，在金属/介质界面附件会存在表面等离极化激元效应，这个效应导致出射光效率降低，通过在阴极115上设置一层封盖层116可以改善这种效应。\n\n[0031]其中，阳极111要进行空穴注入，在阳极111中的载流子是空穴，带正电，而阴极115要进行电子注入，在阴极115中的载流子是电子，带负电。空穴传输层112用于传输从阳极111流入的空穴到达发光层113和阻挡发光层113流入的电子到达阳极111，而电子传输层114用于传输从阴极115流入的电子到达发光层113和阻挡发光层113流入的空穴到达阴极115。有机电致发光显示面板的发光过程包括：当在阳极111和阴极115施加适当的电压时，电子和空穴克服界面能垒后，经由阴极115和阳极111注入，电子和空穴分别经由电子传输层114和空穴传输层112迁移到发光层113，电子和空穴在发光层113内互相复合，形成处于激发态的激子，激子将能量传递给发光层113的有机发光分子，并激发有机发光分子的电子从基态跃迁到激发态，激发态的电子释放能量回到稳定的基态，产生辉光放电，从而实现电致发光。\n\n[0032]然而，由于有机电致发光显示面板的发光层113中的有机材料对水(H2O)和氧气(O2)敏感，在发光有效区(即如图2所示的A1区域)制作完成之后，需要在采用其他材料对其进行封装，即封装材料120(即如图2所示的A2区域)需要超出发光有效区范围之外。为了进一步减小非显示区的边界(Border)区域，现有的屏接屏技术多采用窄化边界的方法，通过将显示面板(Panel)的左右边界极致窄化，来获得非常狭窄的四边边界，再将这种特殊的显示面板拼接成大尺寸显示面板，以实现拼接显示的目的。受限于发光层113的这一特性，有机电致发光显示面板的边界区域可以减窄，但必不可少，因此现有的屏接屏技术虽然可实现多块屏幕联合显示，但屏幕与屏幕之间始终会存在边框的影响，保留有非显示区，表现在大屏幕上，就会出现一条又一条黑线，无法真正实现“无缝化”。\n\n[0033]基于现有技术所存在的问题，如图3所示，本发明提供了一种显示面板200，包括拼接设置的多个子显示面板210，显示面板200还包括多个显示区域(即第一子显示面板对应的区域，未在图中示出)和位于多个显示区域之间的拼接区域(即第二子显示面板对应的区域，未在图中示出)，多个子显示面板210包括位于显示区域的第一子显示面板220和位于拼接区域的第二子显示面板230，其中，第二子显示面板230包括micro LED或mini LED。\n\n[0034]如图4所示，为OLED的子像素的结构示意图，像素单元130包括红色子像素131、绿色子像素132和蓝色子像素133，红色子像素131和蓝色子像素133是不规则的形状，且红色子像素131和蓝色子像素133的数量是绿色子像素132数量的一半。为了保证在相同的分辨率的情形下降低子像素排列密度和降低成本，在有机电致发光显示面板中，采用的是Pentile RGB排列方式(如图3所示的子像素排列方式)，而Pentile RGB排列的单个像素点只有“红绿”或者“蓝绿”两个子像素点组成。在实际的显示图像时，Pentile RGB排列的一个像素点会“借用”与其相邻的像素点的另一种颜色来构成三基色，即每个像素和相邻的像素共享自己所不具备的那种颜色的子像素，通过调节子像素点和相邻的像素的发光比例以及亮度可以发出不同颜色的光线。\n\n[0035]基于图4所示的子像素的结构示意图，如图5所示，为OLED的膜层结构示意图，包括红色子像素131、绿色子像素132和蓝色子像素133的像素单元130位于依次层叠设置的薄膜晶体管单元140和基板150上，为了保障发光强度，像素单元130的尺寸一般略大于相对应的薄膜晶体管单元140的尺寸，当第二子显示面板230为有机电致发光显示面板时，位于拼接区域的第二子显示面板230由于像素单元130的尺寸大于薄膜晶体管的尺寸，导致拼接区域的像素单元130之间的间距不能与显示区域的像素单元130之间的间距保持一致，无法保证拼接区域与显示区域的像素单元130的衔接连贯性，在屏幕拼接时空间受限，无法实现无缝拼接。\n\n[0036]不同于如图4所示的子像素的结构示意图，如图6所示，为micro LED或mini LED的子像素的结构示意图，与有机电致发光显示面板的Pentile RGB排列方式不同，micro LED或mini LED采用的是标准的RGB排列方式，像素单元240包括红色子像素241、绿色子像素242和蓝色子像素243，每个子像素的大小一致，且数量相同，通过调节三个子像素的发光比例以及亮度可以发出不同颜色的光线。\n\n[0037]基于图6所示的子像素的结构示意图，如图7所示，为micro LED或mini LED的结构示意图，包括红色子像素241、绿色子像素242和蓝色子像素243的像素单元240位于依次层叠设置的薄膜晶体管单元250和基板260上。不同与有机电致发光显示面板，micro LED或mini LED是一种无机金属半导体或无机发光二极管，其本质上是由一个个像素级别的有机灯泡组成的。由于第二子显示面板230为micro LED或mini LED，不同于有机电致发光显示面板需要对整个有效发光区进行封装，而micro LED或mini LED是基于自封装技术，即micro LED或mini LED针对的是单颗子像素进行封装，不需要额外的封装设计，因此边界的尺寸可以减小至零，克服了有机电致发光显示面板的整面封装带来边界的影响，使拼接区域最外侧的像素单元240的间距也可以和显示区域的像素单元240的间距保持一致，从而实现“无缝”拼接。\n\n[0038]此外，第一子显示面板220与第二子显示面板230的拼接方式可以采用胶水粘合，比如采用光学胶(Optical Clear Adhesive，OCA)，一种透明的光学胶粘剂，光透过率达到90％以上，胶接强度良好，可在室温或者中温下固化，用于胶结透明光学元件的特种粘胶剂，广泛应用于显示技术领域，或者采用压敏胶(Pressure Sensitive Adhesives，PSA)，一种同时具备着液体的粘性性质和固体的弹性性质的粘弹性体，透明性好，也可以采用其它的拼接方式，只要能实现第一显示面板和第二显示面板的拼接即可，具体不作限制。\n\n[0039]其中，第一子显示面板220包括有机电致发光显示面板。\n\n[0040]具体地，第二子显示面板230可以是需要对整面的发光有效区进行封装的有机电致发光显示面板，当第一子显示面板220是有机电致发光显示面板，通过在第一子显示面板220外侧的拼接区域设置第二子显示面板230，利用micro LED或mini LED的自封装的特性，一方面对第一子显示面板220的发光有效区进行封装，以防止水氧进入对有机电致发光显示面板产生影响，另一方面，利用micro LED或mini LED的自封装的特性，以消除拼接显示面板显示画面中的黑线，从而实现屏接屏技术的“无缝化”，提高显示面板的显示品质。\n\n[0041]其中，显示面板还包括覆盖多个有机电致发光显示面板上侧的封装层。\n\n[0042]具体地，当第一子显示面板220是有机电致发光显示面板，通过在第一子显示面板220外侧的拼接区域设置第二子显示面板230，在实现无缝拼接的同时对有机电致发光显示面板的外侧封装，以防止水氧进入有机电致发光显示面板的外侧。为了防止有机电致发光显示面板的顶部受水氧的影响，还可以在多个有机电致发光显示面板上侧设置封装层，通过封装层保护有机电致发光显示面板的上侧不受水氧的影响。其中，封装层(Thin-FilmEncapsulation，TFE)可以通过原子层沉积(ALD)和喷墨打印(IJP)等方式在有机电致发光显示面板的顶部生成，以防止有机电致发光显示面板的顶部受水氧的影响，从而提升显示面板的显示品质。\n\n[0043]其中，第一子显示面板220包括micro LED或mini LED。\n\n[0044]具体地，当第一子显示面板220是micro LED或mini LED，即第一子显示面板220和第二显示面板相同，都是micro LED或mini LED，可以直接将第一子显示面板220和第二子显示面板230做成micro LED或mini LED，也可以通过拼接的方式在分别完成的第一子显示面板220外侧设置第二子显示面板230，具体不作限制。此外，如上文所述，拼接的方式可以通过胶水粘合的方式，比如采用光学胶，或者采用压敏胶，也可以采用其它的拼接方式，只要能实现第一显示面板和第二显示面板的拼接即可，具体不作限制。通过在第一子显示面板220外侧的拼接区域设置第二子显示面板230，利用micro LED或mini LED的自封装的特性，以消除拼接显示面板显示画面中的黑线，从而实现屏接屏技术的“无缝化”，提高显示面板的显示品质。\n\n[0045]其中，多个子显示面板呈阵列式排布。\n\n[0046]如图3所示，为本发明实施例提供的显示面板的结构示意图，通过采用多个子显示面板呈阵列式排布，以形成一个“无缝”拼接的大尺寸显示面板，从而实现屏幕互相拼接、协同显示的需求。此外，还也可以采用其它方式进行排布，比如采用多个子显示面板形成一个很宽的单行排布的显示面板，或者采用多个子显示面板形成一个很长的单列排布的显示面板，或者采用特殊的图形来排布，比如“米”字型或者其它花型等，具体不作限制。\n\n[0047]其中，第二子显示面板230围绕第一子显示面板220设置。\n\n[0048]如图3所示，第二子显示面板230围绕第一子显示面板220设置，即第二子显示面板230位于第一子显示面板220外侧的四周分布，通过采用第二子显示面板230围绕第一子显示面板220设置，利用为micro LED或mini LED的第二子显示面板230，一方面对第二子显示面板230的四周进行封装，以防止水氧进入对第二子显示面板230产生影响，另一方面，利用micro LED或mini LED的自封装的特性，以消除拼接显示面板显示画面中的黑线，从而实现屏接屏技术的“无缝化”，提高显示面板的显示品质。此外，不同于第一子显示面板220的外侧四周都需要拼接的方案，当第一子显示面板220外侧的某一侧或多侧需要拼接时，第二显示面板还可以位于第一子显示面板220外侧的某一侧或者多侧，只要能实现对第二子显示面板230的进行封装，以消除拼接显示面板显示画面中的黑线，从而实现屏接屏技术的“无缝化”即可，具体不作限制。\n\n[0049]其中，第二子显示面板230包括依次层叠设置的多个像素单元240和控制对应的像素单元240的薄膜晶体管单元250，其中，像素单元240在薄膜晶体管单元250上的投影完全位于薄膜晶体管单元250的区域内。\n\n[0050]如图7所示，第二子显示面板230包括从上到下依次层叠设置的多个像素单元240、控制对应的像素单元240的薄膜晶体管单元250和基板260，且像素单元240在薄膜晶体管单元250上的投影完全位于薄膜晶体管单元250的区域内，即像素单元240的尺寸不大于薄膜晶体管单元250的尺寸。当第二子显示面板230的像素单元240的尺寸不大于薄膜晶体管单元250的尺寸时，可以实现位于拼接区域的像素单元的间距与显示区域的像素单元的间距保持一致，以保证最外侧的拼接区域的像素单元240的衔接连贯性，从而实现“无缝”拼接。\n\n[0051]其中，像素单元240的宽度不大于薄膜晶体管单元250的宽度，且像素单元240的长度不大于薄膜晶体管单元250的长度。\n\n[0052]具体地，如上文所述，像素单元240在薄膜晶体管单元250上的投影完全位于薄膜晶体管单元250的区域内，即薄膜晶体管单元250的区域可以完全覆盖像素单元240的区域，对应地，像素单元240的宽度不大于薄膜晶体管单元250的宽度，且像素单元240的长度不大于薄膜晶体管单元250的长度。通过采用第二子显示面板230的像素单元240的面积小于薄膜晶体管单元250的面积，可以实现位于拼接区域的第二子显示面板230的像素单元240之间的间距与第一子显示面板220的有效发光区的像素单元240的间距保持一致，从而实现“无缝”拼接。\n\n[0053]其中，显示面板300还包括栅极驱动电路320，栅极驱动电路320在显示区域310垂直投影内，其中，垂直的方向包括与垂直显示区域方向平行的方向。\n\n[0054]如图8所示，为本发明实施例提供的一种包括栅极驱动电路320的显示面板300的结构示意图，栅极驱动电路320在显示区域310垂直投影内，其中，垂直的方向为与垂直显示区域310方向平行的方向，如图8所示，水平的方向即与X方向平行的方向，竖直的方向即与Y方向平行的方向，而垂直的方向是指与X方向和Y方向形成的平面(即显示区域310形成的平面)垂直的方向，即与Z方向平行的方向，下文的垂直的方向与此相同，具体不再赘述。栅极驱动电路320(Gate On Array，GOA)，又称之为阵列行驱动电路，用于显示面板的逐行扫描驱动。在现有的显示装置中，由于各种驱动模组和电路板需要与显示面板进行绑定连接，显示装置上需要预留出足够的非显示区域以进行线路绑定，导致显示装置的非显示区域始终较大，不利于显示装置的窄边框化或无边框化。当栅极驱动电路320在显示区域310垂直投影内时，即栅极驱动电路320位于显示区域310的下方，可以与薄膜晶体管单元250同层设置，也可以与薄膜晶体管单元250非同层设置，具体不作限制。通过将栅极驱动电路在显示区域垂直投影内，以减小或者消除显示面板的非显示区域，有利于实现屏接屏技术的“无缝化”，提高显示面板的显示品质。\n\n[0055]其中，显示面板300还包括扇出区330，扇出区330与栅极驱动电路320电连接，扇出区330在显示区域310垂直投影内。\n\n[0056]具体地，如图8所示，显示面板300还包括扇出区330(AA fanout)，扇出区330是指，显示面板300的多条数据线呈扇形聚拢的区域，扇出区330一端与显示面板300的多条数据线电连接，一端与栅极驱动电路320电连接，以使栅极驱动电路320实现逐行扫描驱动。一般情况下，扇出区330位于显示面板300的非显示区域，不利于显示面板300的窄边框化或无边框化。当扇出区330在显示区域310垂直投影内时，即扇出区位于显示区域310的下方，扇出区330可以与栅极驱动电路320同层设置，也可以与栅极驱动电路320非同层设置，只要扇出区330位于显示区域310的下方即可，具体不作限制。通过将扇出区330设置在显示区域310垂直投影内，以进一步减小或者消除显示面板的非显示区域。\n\n[0057]此外，不同于图8所示的两个栅极驱动电路和与其相对应的两个扇出区330位于显示区域310的下方的方案，如图9所示，为本发明实施例提供的另一种包括栅极驱动电路的显示面板的结构示意图，显示面板400仅设有一条栅极驱动电路420和与其相对应的扇出区430，且栅极驱动电路420和与其相对应的扇出区430都在显示区域410垂直投影内，以进一步减少显示面板400的非显示区域的面积，从而提高显示面板400的集成度，有利于实现屏接屏技术的“无缝化”。\n\n[0058]由上述可知，本发明提供了一种显示面板，显示面板包括拼接设置的多个子显示面板，显示面板还包括多个显示区域和位于多个显示区域之间的拼接区域，多个子显示面板包括位于显示区域的第一子显示面板和位于拼接区域的第二子显示面板，其中，第二子显示面板包括micro LED或mini LED，通过利用设置在第一子显示面板外侧的micro LED或mini LED自封装的特性，以消除拼接显示面板显示画面中的黑线，从而实现屏接屏技术的“无缝化”，提高显示面板的显示品质。\n\n[0059]以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。');
INSERT INTO `os_patent_instruction_text` VALUES (10957, 24011, '技术领域\n\n[0001]本申请涉及显示器制造技术领域，具体涉及一种微型发光二极管无缝拼接的制备方法及其对应的拼接显示装置。\n\n背景技术\n\n[0002]MicroLED/MiniLED，微型发光二极管，是将传统的LED结构薄膜化、微小化及矩阵化之后，采用PC2、柔性FPC、2T及CMOS/TFT集成电路工艺等制成驱动电路，实现LED光源中每个像素点定址控制和单独驱动的显示技术。由于微型LED技术的亮度、对比度、反应时间、可视角度、分辨率等各种指标都强于LCD和OLED技术，加上自发光、结构简单、体积小及节能的优点，已经受到了广泛的关注。\n\n[0003]随着高阶TV市场对画质的要求越来越高，提升显示画质成为高阶TV的一个新需求。目前8K OLED受限于补偿电路、IGZO背板技术及驱动设计等问题，尚需开发。而MiniLED/Micro-LED作为一个全新的显示技术，在亮度、功耗上较OLED和dull cell均具有优势，目前成为显示领域的一个热门方向。\n\n[0004]与此同时，随着Mini/Micro LED的间距(pitch)越做越小，在大尺寸拼接应用中对于无缝拼接的需求越来越急迫，而目前玻璃基的Mini/Micro LED均需要采用COF Bonding的工艺将驱动通过COF与Mini/Micro LED基板连接在一起，由于在拼接侧存在绑定引线(Bondinglead)，该绑定引线层则具有一定的厚度，由此在显示面板拼接时则存在视觉拼缝S，如图1所示；且当Mini/Micro LED的间距再减小到一定程度时，会导致基板的侧面区域过小而无法布线，如图2所示。\n\n发明内容\n\n[0005]鉴于此，本申请提出了一种Mini-LED/Micro-LED拼缝改善方法，用于解决上述在Mini/Micro LED大尺寸显示的拼接应用中，进一步减小Mini/Micro LED背板间拼接间距实现无缝拼接的效果的同时，也能实施在基板拼接处的Mini/Micro LED驱动布线，从而实现大尺寸显示中的无缝拼接显示。\n\n[0006]为解决上述技术问题，本发明提供的技术方案如下：\n\n[0007]本申请提供了一种微型发光二极管显示屏，包括第一显示面板、第二显示面板及一控制板：\n\n[0008]所述第一显示面板包括第一绑定部，所述第一绑定部为凸出结构，该凸出结构包括一上接合面；\n\n[0009]所述第二显示面板包括第二绑定部，所述第二绑定部为缺省结构，该缺省结构包括一下接合面；\n\n[0010]第一引线，贴附在上接合面且一端与第一显示面板电连接，另一端引出至绑定部所在基板的背面；\n\n[0011]第二引线，贴附在下接合面且一端与第二显示面板电连接，另一端引出至绑定部所在基板的背面；\n\n[0012]控制板，设置于基板的背面，分别电连接第一引线和第二引线；\n\n[0013]第一绑定部与第二绑定部搭接形成微型发光二极管显示屏。\n\n[0014]具体地，所述第一引线、第二引线的材质为银浆或各向异性导电浆材料。所述控制板为源极驱动板。\n\n[0015]为了提升显示面板拼接时绑定引线的走线空间，该微型发光二极管显示屏的拼接结构为：所述第一绑定部的凸出结构为上接合面为斜面的楔形结构；所述第二绑定部的缺省结构为下接合面为斜面且缺省结构对应于第一绑定部的凸出结构。其中，所述上接合面的斜面倾斜角度θ为锐角，所述下接合面的斜面倾斜角度θ’为钝角，倾斜角度θ与倾斜角度θ’之和为180°。\n\n[0016]由此可知，通过将显示面板的纵向截面调整为斜面，则绑定引线走线空间得到有效提升。此时，对应斜面的走线空间则通过斜面角度的改变而可以调整，第二斜面角度则与第一斜面角度对应调整。\n\n[0017]或者可选地，所述第一绑定部的凸出结构为上接合面为平面的长方体结构；所述第二绑定部的缺省结构为下接合面为平面且缺省结构对应于第一绑定部的凸出结构。由于凸出结构与缺省结构的拼接面实现第一显示面板与第二显示面板搭接的同时也在其上进行布线，从而解决了现有技术中因在基板侧面布线造成显示屏拼接侧拼缝的问题。进而，在上接合面与下接合面在布线后实现无缝拼接的基础上，该上接合面与下接合面既可以为规则的平面、曲面等也可以为不规则的拼接面。\n\n[0018]进一步地，本申请还提供了上述显示屏对应的一种微型发光二极管显示屏的制备方法，包括以下步骤：\n\n[0019]S1，在第一微型发光二极管的第一显示面板的基板处设置具有凸出结构的第一绑定部，该凸出结构包括一上接合面；\n\n[0020]S2，在第二微型发光二极管的第二显示面板的基板处设置具有缺省结构的第二绑定部，该缺省结构包括一下接合面；\n\n[0021]S3，在上接合面上贴附一与第一显示面板电连接的第一引线，另一端引出至绑定部所在基板的背面；\n\n[0022]S4，在下接合面上贴附一与第二显示面板电连接的第二引线，另一端引出至绑定部所在基板的背面；\n\n[0023]S5，通过分别与第一引线、第二引线电连接的控制板控制第一显示面板及第二显示面板的集成显示；\n\n[0024]S6，将第一绑定部与第二绑定部搭接形成微型发光二极管显示屏。\n\n[0025]为了提升显示面板拼接时绑定引线的走线空间，该微型发光二极管显示屏的拼接结构为：所述第一绑定部的凸出结构为上接合面为斜面的楔形结构；所述上接合面的斜面倾斜角度θ为锐角，所述下接合面的斜面倾斜角度θ’为钝角，倾斜角度θ与倾斜角度θ’之和为180°。\n\n[0026]由此可知，通过将显示面板的纵向截面调整为斜面，则绑定引线走线空间得到有效提升。此时，对应斜面的走线空间则通过斜面角度的改变而可以调整，第二斜面角度则与第一斜面角度对应调整。\n\n[0027]或者可选地，所述第一绑定部的凸出结构为上接合面为平面的长方体结构；所述第二绑定部的缺省结构为下接合面为平面且缺省结构对应于第一绑定部的凸出结构。\n\n[0028]本申请提供的拼接显示方法及装置，通过采用斜面拼接的拼接结构在斜面上进行绑定引线的走线布局，故而在原有微型发光二极管显示面板的基础上既增加了基板接合区域的走线空间，同时因斜面拼接在纵向使得在显示面板上的视觉拼缝处可以实现无缝拼接。另一可选地，通过采用凸出长方体与缺省长方体的拼接结构在凸出长方体面上进行绑定引线的走线布局，故而在原有微型发光二极管显示面板的基础上既增加了基板接合区域的走线空间，同时因凸出长方体与缺省长方体的拼接在纵向也可以使得在显示面板上的视觉拼缝处可以实现无缝拼接。上述方案从而既提升了大尺寸拼接的接合处走线空间也提升了显示画面品质。\n\n附图说明\n\n[0029]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0030]图1为视觉拼缝示意图；\n\n[0031]图2为现有技术中显示面板拼接的示意图；\n\n[0032]图3为微型发光二极管斜面结构拼接示意图；\n\n[0033]图4为基板斜面夹角示意图；\n\n[0034]图5为微型发光二极管拼接显示方法流程图；\n\n[0035]图6为微型发光二极管拼接显示装置界面图；\n\n[0036]图7为微型发光二极管长方体凸出结构拼接示意图；\n\n[0037]图8为基板的长方体凸出结构示意图；\n\n具体实施方式\n\n[0038]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0039]参见图2，其为常规的显示面板拼接方式：\n\n[0040]第一微型发光二极管显示面板，包括基板1，基板1包括衬底11及基板走线层12，基板1为玻璃等绝缘材料；基板走线层12，即第一线路，形成在基板1的衬底11上，布置微型发光二极管的导电走线；绑定引线13，贴附在接合面，连接控制板14；15为微型发光二极管阵列；通过控制板14对第一微型发光二极管显示面板的显示控制。\n\n[0041]第二微型发光二极管显示面板，包括基板2，基板2包括衬底21及基板走线层22，基板2为玻璃等绝缘材料；基板走线层22，即第二线路，形成在基板2的衬底21上，布置微型发光二极管的导电走线；绑定引线23，贴附在接合面，连接控制板24；25为微型发光二极管阵列；通过控制板24对第一微型发光二极管显示面板的显示控制。拼接显示时，绑定引线13、23所在的接合区通过金属浆拼接在一起。此时便形成了如图1所示的在显示面上比较明显的视觉拼缝S。\n\n[0042]本发明一种实施例提供一种Mini-LED/Micro-LED无缝拼接显示方法：将Mini/Micro LED基板一的接合面做成斜面，将绑定引线引到玻璃基板背面，然后将源极驱动板(XB)黏贴在玻璃基板背面。将Mini/Micro LED基板二的接合区做在玻璃基板背面，同样做成斜面。然后将Mini/Micro LED基板一和Mini/Micro LED基板二的接合区通过银浆连接在一起，通过背面的控制板(CB)同时控制两块Mini-LED灯板，以此消除了基板拼缝的同时提升显示品味的技术问题。\n\n[0043]以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0044]参见图3，其为基于图2所示的显示面板拼接方式而改进后的显示面板拼接方式：\n\n[0045]第一微型发光二极管显示面板，包括：\n\n[0046]基板1，包括衬底11及基板走线层12，衬底11为玻璃等绝缘材料，其中，基板1的拼接侧设置成相对拼接侧截面外凸的凸出结构，该凸出结构即构成第一绑定部，该凸出结构包括一上接合面，在该上接合面上贴附与第一显示面板电连接的第一引线13；\n\n[0047]所述第一绑定部的凸出结构为上接合面为斜面的楔形结构；\n\n[0048]基板走线层12，即第一线路，形成在基板1的衬底11上，布置微型发光二极管的导电走线，与第一引线电连接；\n\n[0049]第一引线13，贴附在上接合面斜面并延伸至基板1背面连接控制板14；\n\n[0050]15为微型发光二极管阵列。\n\n[0051]第二微型发光二极管显示面板，包括：\n\n[0052]基板2，包括衬底21及基板走线层22，衬底21为玻璃等绝缘材料；其中，基板2的拼接侧设置成相对拼接侧截面内缺的缺省结构，该缺省结构即构成第二绑定部，该缺省结构包括一下接合面，在该下接合面上贴附与第二显示面板电连接的第二引线23；\n\n[0053]所述第二绑定部的缺省结构为下接合面为斜面且缺省结构对应于第一绑定部的凸出结构；\n\n[0054]基板走线层22，即第一线路，形成在基板2的衬底21上，布置微型发光二极管的导电走线；\n\n[0055]第二引线23，贴附在下接合面并延伸处出基板2与控制板14电连接；\n\n[0056]25为微型发光二极管阵列。\n\n[0057]本申请提供了上述显示屏对应的一种微型发光二极管显示屏的制备方法，参见图5，包括以下步骤：\n\n[0058]S1，在第一微型发光二极管的第一显示面板的基板处设置具有凸出结构的第一绑定部，该凸出结构包括一上接合面；\n\n[0059]S2，在第二微型发光二极管的第二显示面板的基板处设置具有缺省结构的第二绑定部，该缺省结构包括一下接合面；\n\n[0060]S3，在上接合面上贴附一与第一显示面板电连接的第一引线，另一端引出至绑定部所在基板的背面；\n\n[0061]S4，在下接合面上贴附一与第二显示面板电连接的第二引线，另一端引出至绑定部所在基板的背面；\n\n[0062]S5，通过分别与第一引线、第二引线电连接的控制板控制第一显示面板及第二显示面板的集成显示；\n\n[0063]S6，将第一绑定部与第二绑定部搭接形成微型发光二极管显示屏。\n\n[0064]当第一微型发光二极管显示面板与第二微型发光二极管显示面板搭接时，基于基板1的上接合面为斜面的凸出结构(第一绑定部)与基板2的下接合面为缺省结构(第二绑定部)的拼接，第一引线13与第二引线23接合并电连接到控制板14；由此，便可以通过控制板14同时控制第一微型发光二极管显示面板与第二微型发光二极管显示面板的拼接集成显示。\n\n[0065]具体地，所述第一微型发光二极管显示面板与第二微型发光二极管显示面板的拼接结构通过银浆或各向异性导电(ACF)浆的引线连接。所述控制板14为源极驱动板，源极驱动板通过连接的绑定引线来控制第一微型发光二极管显示面板与第二微型发光二极管显示面板的集成显示。\n\n[0066]优选地，所述第一基板的上接合面的斜面倾斜角度θ为可变的锐角，参见图4，第二基板的下接合面的斜面倾斜角度θ’为钝角，倾斜角度θ与倾斜角度θ’之和为180°。此处，C为上接合面斜面，也即接合面，在该斜面上进行绑定引线布置，根据该斜面C的结构可知，随着斜面角度θ的调整，对应接合面的面积也可以做出对应改变，这样即可以调整基板接合区域走线空间的限制。\n\n[0067]进一步地，本申请还提供了一种微型发光二极管拼接显示装置，如图6所示，包括第一微型发光二极管显示面板1、第二微型发光二极管显示面板2，以及用于控制第一微型发光二极管显示面板与第二微型发光二极管显示面板的控制板14：\n\n[0068]第一微型发光二极管显示面板，包括一第一基板1，第一基板1包括衬底11及基板走线层12，所述第一基板1拼接侧设置成相对拼接侧截面外凸的凸出结构，该凸出结构包括一上接合面；\n\n[0069]第二微型发光二极管显示面板，包括一第二基板2，第二基板2包括衬底21及基板走线层22，所述第二基板2的拼接侧设置成相对拼接侧截面内缺的缺省结构，该缺省结构包括一下接合面；\n\n[0070]控制板14通过连接第一引线引到第一基板1背面；\n\n[0071]第一微型发光二极管显示面板1与第二微型发光二极管显示面板2拼接时，第一引线13与第二引线23接合，并电连接到控制板14。\n\n[0072]具体地，所述第一微型发光二极管显示面板1与第二微型发光二极管显示面板2的拼接结构通过银浆或各向异性导电(ACF)浆连接。所述控制板14为源极驱动板，源极驱动板通过连接的绑定引线来控制第一微型发光二极管显示面板1与第二微型发光二极管显示面板2的集成显示。\n\n[0073]优选地，所述第一基板的上接合面的斜面倾斜角度θ为可变的锐角，参见图4，第二基板的下接合面的斜面倾斜角度θ’为钝角，倾斜角度θ与倾斜角度θ’之和为180°。此处，C为上接合面斜面，也即接合面，在该斜面上进行绑定引线布置，根据该斜面C的结构可知，随着斜面角度θ的调整，对应接合面的面积也可以做出对应改变，这样即可以调整基板接合区域走线空间的限制。\n\n[0074]上述拼接结构的改进，既增加了基板接合区域的走线空间，同时因斜面拼接在纵向使得在显示面板上的视觉拼缝处可以实现无缝拼接。结合上述设计思想，本发明还提出另一种拼接结构，参见说明书附图7、8：\n\n[0075]在该拼接显示结构中，将第一微型发光二极管显示面板的基板3的衬底31设置成一长方体凸出结构的绑定结构，而将第二微型发光二极管显示面板的基板4的衬底41设置成一长方体缺省结构的绑定结构，参见附图7，其中35、45为微型发光二极管阵列，通过长方体凸出结构的上接合面进行走线则同样提高了基板接合区域的走线空间；而对于无缝拼接，则设置长方体凸出部的厚度h略小于长方体缺省部的厚度h’，以及长方体凸出部的长度l也略小于长方体缺省部的长度l’(与图8中长方体凸出结构相对应的长方体缺省结构，h’、l’未示出)，这样即在拼接时，横向拼接面C与纵向平截面S均预留一定的空间来适应引线布局，从而实现显示面板显示面的无缝拼接。\n\n[0076]具体地，第一微型发光二极管显示面板，包括一第一基板3，第一基板3包括衬底31及基板走线层32，所述第一基板1拼接侧设置成相对拼接侧截面外凸的长方体状凸出结构，并在该长方体凸出的上接合面贴附第一引线33；\n\n[0077]第二微型发光二极管显示面板，包括一第二基板4，第二基板4包括衬底41及基板走线层42，所述第二基板4的拼接侧设置成相对拼接侧截面内缺的长方体状缺省结构，并在该长方体缺省的下接合面贴附第二引线43；\n\n[0078]控制板34通过连接第一引线33引到第一基板3背面；\n\n[0079]第一微型发光二极管显示面板与第二微型发光二极管显示面板搭接时，第一引线33与第二引线43接合，并电连接到控制板14。\n\n[0080]由于凸出结构与缺省结构的拼接面实现第一显示面板与第二显示面板搭接的同时也在其上进行布线，从而解决了现有技术中因在基板侧面布线造成显示屏拼接侧拼缝的问题。进而，在上接合面与下接合面在布线后实现无缝拼接的基础上，该上接合面与下接合面既可以为规则的平面、曲面等也可以为不规则的拼接面。\n\n[0081]具体地，所述第一微型发光二极管显示面板与第二微型发光二极管显示面板的拼接结构通过银浆或各向异性导电(ACF)浆连接。所述控制板34为源极驱动板，源极驱动板通过连接的绑定引线来控制第一微型发光二极管显示面板与第二微型发光二极管显示面板的集成显示。\n\n[0082]以上对本申请实施例所提供的一种微型发光二极管拼接显示屏及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示器制造技术领域，具体涉及一种微型发光二极管无缝拼接的制备方法及其对应的拼接显示装置。\n\n背景技术\n\n[0002]MicroLED/MiniLED，微型发光二极管，是将传统的LED结构薄膜化、微小化及矩阵化之后，采用PC2、柔性FPC、2T及CMOS/TFT集成电路工艺等制成驱动电路，实现LED光源中每个像素点定址控制和单独驱动的显示技术。由于微型LED技术的亮度、对比度、反应时间、可视角度、分辨率等各种指标都强于LCD和OLED技术，加上自发光、结构简单、体积小及节能的优点，已经受到了广泛的关注。\n\n[0003]随着高阶TV市场对画质的要求越来越高，提升显示画质成为高阶TV的一个新需求。目前8K OLED受限于补偿电路、IGZO背板技术及驱动设计等问题，尚需开发。而MiniLED/Micro-LED作为一个全新的显示技术，在亮度、功耗上较OLED和dull cell均具有优势，目前成为显示领域的一个热门方向。\n\n[0004]与此同时，随着Mini/Micro LED的间距(pitch)越做越小，在大尺寸拼接应用中对于无缝拼接的需求越来越急迫，而目前玻璃基的Mini/Micro LED均需要采用COF Bonding的工艺将驱动通过COF与Mini/Micro LED基板连接在一起，由于在拼接侧存在绑定引线(Bondinglead)，该绑定引线层则具有一定的厚度，由此在显示面板拼接时则存在视觉拼缝S，如图1所示；且当Mini/Micro LED的间距再减小到一定程度时，会导致基板的侧面区域过小而无法布线，如图2所示。\n\n发明内容\n\n[0005]鉴于此，本申请提出了一种Mini-LED/Micro-LED拼缝改善方法，用于解决上述在Mini/Micro LED大尺寸显示的拼接应用中，进一步减小Mini/Micro LED背板间拼接间距实现无缝拼接的效果的同时，也能实施在基板拼接处的Mini/Micro LED驱动布线，从而实现大尺寸显示中的无缝拼接显示。\n\n[0006]为解决上述技术问题，本发明提供的技术方案如下：\n\n[0007]本申请提供了一种微型发光二极管显示屏，包括第一显示面板、第二显示面板及一控制板：\n\n[0008]所述第一显示面板包括第一绑定部，所述第一绑定部为凸出结构，该凸出结构包括一上接合面；\n\n[0009]所述第二显示面板包括第二绑定部，所述第二绑定部为缺省结构，该缺省结构包括一下接合面；\n\n[0010]第一引线，贴附在上接合面且一端与第一显示面板电连接，另一端引出至绑定部所在基板的背面；\n\n[0011]第二引线，贴附在下接合面且一端与第二显示面板电连接，另一端引出至绑定部所在基板的背面；\n\n[0012]控制板，设置于基板的背面，分别电连接第一引线和第二引线；\n\n[0013]第一绑定部与第二绑定部搭接形成微型发光二极管显示屏。\n\n[0014]具体地，所述第一引线、第二引线的材质为银浆或各向异性导电浆材料。所述控制板为源极驱动板。\n\n[0015]为了提升显示面板拼接时绑定引线的走线空间，该微型发光二极管显示屏的拼接结构为：所述第一绑定部的凸出结构为上接合面为斜面的楔形结构；所述第二绑定部的缺省结构为下接合面为斜面且缺省结构对应于第一绑定部的凸出结构。其中，所述上接合面的斜面倾斜角度θ为锐角，所述下接合面的斜面倾斜角度θ’为钝角，倾斜角度θ与倾斜角度θ’之和为180°。\n\n[0016]由此可知，通过将显示面板的纵向截面调整为斜面，则绑定引线走线空间得到有效提升。此时，对应斜面的走线空间则通过斜面角度的改变而可以调整，第二斜面角度则与第一斜面角度对应调整。\n\n[0017]或者可选地，所述第一绑定部的凸出结构为上接合面为平面的长方体结构；所述第二绑定部的缺省结构为下接合面为平面且缺省结构对应于第一绑定部的凸出结构。由于凸出结构与缺省结构的拼接面实现第一显示面板与第二显示面板搭接的同时也在其上进行布线，从而解决了现有技术中因在基板侧面布线造成显示屏拼接侧拼缝的问题。进而，在上接合面与下接合面在布线后实现无缝拼接的基础上，该上接合面与下接合面既可以为规则的平面、曲面等也可以为不规则的拼接面。\n\n[0018]进一步地，本申请还提供了上述显示屏对应的一种微型发光二极管显示屏的制备方法，包括以下步骤：\n\n[0019]S1，在第一微型发光二极管的第一显示面板的基板处设置具有凸出结构的第一绑定部，该凸出结构包括一上接合面；\n\n[0020]S2，在第二微型发光二极管的第二显示面板的基板处设置具有缺省结构的第二绑定部，该缺省结构包括一下接合面；\n\n[0021]S3，在上接合面上贴附一与第一显示面板电连接的第一引线，另一端引出至绑定部所在基板的背面；\n\n[0022]S4，在下接合面上贴附一与第二显示面板电连接的第二引线，另一端引出至绑定部所在基板的背面；\n\n[0023]S5，通过分别与第一引线、第二引线电连接的控制板控制第一显示面板及第二显示面板的集成显示；\n\n[0024]S6，将第一绑定部与第二绑定部搭接形成微型发光二极管显示屏。\n\n[0025]为了提升显示面板拼接时绑定引线的走线空间，该微型发光二极管显示屏的拼接结构为：所述第一绑定部的凸出结构为上接合面为斜面的楔形结构；所述上接合面的斜面倾斜角度θ为锐角，所述下接合面的斜面倾斜角度θ’为钝角，倾斜角度θ与倾斜角度θ’之和为180°。\n\n[0026]由此可知，通过将显示面板的纵向截面调整为斜面，则绑定引线走线空间得到有效提升。此时，对应斜面的走线空间则通过斜面角度的改变而可以调整，第二斜面角度则与第一斜面角度对应调整。\n\n[0027]或者可选地，所述第一绑定部的凸出结构为上接合面为平面的长方体结构；所述第二绑定部的缺省结构为下接合面为平面且缺省结构对应于第一绑定部的凸出结构。\n\n[0028]本申请提供的拼接显示方法及装置，通过采用斜面拼接的拼接结构在斜面上进行绑定引线的走线布局，故而在原有微型发光二极管显示面板的基础上既增加了基板接合区域的走线空间，同时因斜面拼接在纵向使得在显示面板上的视觉拼缝处可以实现无缝拼接。另一可选地，通过采用凸出长方体与缺省长方体的拼接结构在凸出长方体面上进行绑定引线的走线布局，故而在原有微型发光二极管显示面板的基础上既增加了基板接合区域的走线空间，同时因凸出长方体与缺省长方体的拼接在纵向也可以使得在显示面板上的视觉拼缝处可以实现无缝拼接。上述方案从而既提升了大尺寸拼接的接合处走线空间也提升了显示画面品质。\n\n附图说明\n\n[0029]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0030]图1为视觉拼缝示意图；\n\n[0031]图2为现有技术中显示面板拼接的示意图；\n\n[0032]图3为微型发光二极管斜面结构拼接示意图；\n\n[0033]图4为基板斜面夹角示意图；\n\n[0034]图5为微型发光二极管拼接显示方法流程图；\n\n[0035]图6为微型发光二极管拼接显示装置界面图；\n\n[0036]图7为微型发光二极管长方体凸出结构拼接示意图；\n\n[0037]图8为基板的长方体凸出结构示意图；\n\n具体实施方式\n\n[0038]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0039]参见图2，其为常规的显示面板拼接方式：\n\n[0040]第一微型发光二极管显示面板，包括基板1，基板1包括衬底11及基板走线层12，基板1为玻璃等绝缘材料；基板走线层12，即第一线路，形成在基板1的衬底11上，布置微型发光二极管的导电走线；绑定引线13，贴附在接合面，连接控制板14；15为微型发光二极管阵列；通过控制板14对第一微型发光二极管显示面板的显示控制。\n\n[0041]第二微型发光二极管显示面板，包括基板2，基板2包括衬底21及基板走线层22，基板2为玻璃等绝缘材料；基板走线层22，即第二线路，形成在基板2的衬底21上，布置微型发光二极管的导电走线；绑定引线23，贴附在接合面，连接控制板24；25为微型发光二极管阵列；通过控制板24对第一微型发光二极管显示面板的显示控制。拼接显示时，绑定引线13、23所在的接合区通过金属浆拼接在一起。此时便形成了如图1所示的在显示面上比较明显的视觉拼缝S。\n\n[0042]本发明一种实施例提供一种Mini-LED/Micro-LED无缝拼接显示方法：将Mini/Micro LED基板一的接合面做成斜面，将绑定引线引到玻璃基板背面，然后将源极驱动板(XB)黏贴在玻璃基板背面。将Mini/Micro LED基板二的接合区做在玻璃基板背面，同样做成斜面。然后将Mini/Micro LED基板一和Mini/Micro LED基板二的接合区通过银浆连接在一起，通过背面的控制板(CB)同时控制两块Mini-LED灯板，以此消除了基板拼缝的同时提升显示品味的技术问题。\n\n[0043]以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0044]参见图3，其为基于图2所示的显示面板拼接方式而改进后的显示面板拼接方式：\n\n[0045]第一微型发光二极管显示面板，包括：\n\n[0046]基板1，包括衬底11及基板走线层12，衬底11为玻璃等绝缘材料，其中，基板1的拼接侧设置成相对拼接侧截面外凸的凸出结构，该凸出结构即构成第一绑定部，该凸出结构包括一上接合面，在该上接合面上贴附与第一显示面板电连接的第一引线13；\n\n[0047]所述第一绑定部的凸出结构为上接合面为斜面的楔形结构；\n\n[0048]基板走线层12，即第一线路，形成在基板1的衬底11上，布置微型发光二极管的导电走线，与第一引线电连接；\n\n[0049]第一引线13，贴附在上接合面斜面并延伸至基板1背面连接控制板14；\n\n[0050]15为微型发光二极管阵列。\n\n[0051]第二微型发光二极管显示面板，包括：\n\n[0052]基板2，包括衬底21及基板走线层22，衬底21为玻璃等绝缘材料；其中，基板2的拼接侧设置成相对拼接侧截面内缺的缺省结构，该缺省结构即构成第二绑定部，该缺省结构包括一下接合面，在该下接合面上贴附与第二显示面板电连接的第二引线23；\n\n[0053]所述第二绑定部的缺省结构为下接合面为斜面且缺省结构对应于第一绑定部的凸出结构；\n\n[0054]基板走线层22，即第一线路，形成在基板2的衬底21上，布置微型发光二极管的导电走线；\n\n[0055]第二引线23，贴附在下接合面并延伸处出基板2与控制板14电连接；\n\n[0056]25为微型发光二极管阵列。\n\n[0057]本申请提供了上述显示屏对应的一种微型发光二极管显示屏的制备方法，参见图5，包括以下步骤：\n\n[0058]S1，在第一微型发光二极管的第一显示面板的基板处设置具有凸出结构的第一绑定部，该凸出结构包括一上接合面；\n\n[0059]S2，在第二微型发光二极管的第二显示面板的基板处设置具有缺省结构的第二绑定部，该缺省结构包括一下接合面；\n\n[0060]S3，在上接合面上贴附一与第一显示面板电连接的第一引线，另一端引出至绑定部所在基板的背面；\n\n[0061]S4，在下接合面上贴附一与第二显示面板电连接的第二引线，另一端引出至绑定部所在基板的背面；\n\n[0062]S5，通过分别与第一引线、第二引线电连接的控制板控制第一显示面板及第二显示面板的集成显示；\n\n[0063]S6，将第一绑定部与第二绑定部搭接形成微型发光二极管显示屏。\n\n[0064]当第一微型发光二极管显示面板与第二微型发光二极管显示面板搭接时，基于基板1的上接合面为斜面的凸出结构(第一绑定部)与基板2的下接合面为缺省结构(第二绑定部)的拼接，第一引线13与第二引线23接合并电连接到控制板14；由此，便可以通过控制板14同时控制第一微型发光二极管显示面板与第二微型发光二极管显示面板的拼接集成显示。\n\n[0065]具体地，所述第一微型发光二极管显示面板与第二微型发光二极管显示面板的拼接结构通过银浆或各向异性导电(ACF)浆的引线连接。所述控制板14为源极驱动板，源极驱动板通过连接的绑定引线来控制第一微型发光二极管显示面板与第二微型发光二极管显示面板的集成显示。\n\n[0066]优选地，所述第一基板的上接合面的斜面倾斜角度θ为可变的锐角，参见图4，第二基板的下接合面的斜面倾斜角度θ’为钝角，倾斜角度θ与倾斜角度θ’之和为180°。此处，C为上接合面斜面，也即接合面，在该斜面上进行绑定引线布置，根据该斜面C的结构可知，随着斜面角度θ的调整，对应接合面的面积也可以做出对应改变，这样即可以调整基板接合区域走线空间的限制。\n\n[0067]进一步地，本申请还提供了一种微型发光二极管拼接显示装置，如图6所示，包括第一微型发光二极管显示面板1、第二微型发光二极管显示面板2，以及用于控制第一微型发光二极管显示面板与第二微型发光二极管显示面板的控制板14：\n\n[0068]第一微型发光二极管显示面板，包括一第一基板1，第一基板1包括衬底11及基板走线层12，所述第一基板1拼接侧设置成相对拼接侧截面外凸的凸出结构，该凸出结构包括一上接合面；\n\n[0069]第二微型发光二极管显示面板，包括一第二基板2，第二基板2包括衬底21及基板走线层22，所述第二基板2的拼接侧设置成相对拼接侧截面内缺的缺省结构，该缺省结构包括一下接合面；\n\n[0070]控制板14通过连接第一引线引到第一基板1背面；\n\n[0071]第一微型发光二极管显示面板1与第二微型发光二极管显示面板2拼接时，第一引线13与第二引线23接合，并电连接到控制板14。\n\n[0072]具体地，所述第一微型发光二极管显示面板1与第二微型发光二极管显示面板2的拼接结构通过银浆或各向异性导电(ACF)浆连接。所述控制板14为源极驱动板，源极驱动板通过连接的绑定引线来控制第一微型发光二极管显示面板1与第二微型发光二极管显示面板2的集成显示。\n\n[0073]优选地，所述第一基板的上接合面的斜面倾斜角度θ为可变的锐角，参见图4，第二基板的下接合面的斜面倾斜角度θ’为钝角，倾斜角度θ与倾斜角度θ’之和为180°。此处，C为上接合面斜面，也即接合面，在该斜面上进行绑定引线布置，根据该斜面C的结构可知，随着斜面角度θ的调整，对应接合面的面积也可以做出对应改变，这样即可以调整基板接合区域走线空间的限制。\n\n[0074]上述拼接结构的改进，既增加了基板接合区域的走线空间，同时因斜面拼接在纵向使得在显示面板上的视觉拼缝处可以实现无缝拼接。结合上述设计思想，本发明还提出另一种拼接结构，参见说明书附图7、8：\n\n[0075]在该拼接显示结构中，将第一微型发光二极管显示面板的基板3的衬底31设置成一长方体凸出结构的绑定结构，而将第二微型发光二极管显示面板的基板4的衬底41设置成一长方体缺省结构的绑定结构，参见附图7，其中35、45为微型发光二极管阵列，通过长方体凸出结构的上接合面进行走线则同样提高了基板接合区域的走线空间；而对于无缝拼接，则设置长方体凸出部的厚度h略小于长方体缺省部的厚度h’，以及长方体凸出部的长度l也略小于长方体缺省部的长度l’(与图8中长方体凸出结构相对应的长方体缺省结构，h’、l’未示出)，这样即在拼接时，横向拼接面C与纵向平截面S均预留一定的空间来适应引线布局，从而实现显示面板显示面的无缝拼接。\n\n[0076]具体地，第一微型发光二极管显示面板，包括一第一基板3，第一基板3包括衬底31及基板走线层32，所述第一基板1拼接侧设置成相对拼接侧截面外凸的长方体状凸出结构，并在该长方体凸出的上接合面贴附第一引线33；\n\n[0077]第二微型发光二极管显示面板，包括一第二基板4，第二基板4包括衬底41及基板走线层42，所述第二基板4的拼接侧设置成相对拼接侧截面内缺的长方体状缺省结构，并在该长方体缺省的下接合面贴附第二引线43；\n\n[0078]控制板34通过连接第一引线33引到第一基板3背面；\n\n[0079]第一微型发光二极管显示面板与第二微型发光二极管显示面板搭接时，第一引线33与第二引线43接合，并电连接到控制板14。\n\n[0080]由于凸出结构与缺省结构的拼接面实现第一显示面板与第二显示面板搭接的同时也在其上进行布线，从而解决了现有技术中因在基板侧面布线造成显示屏拼接侧拼缝的问题。进而，在上接合面与下接合面在布线后实现无缝拼接的基础上，该上接合面与下接合面既可以为规则的平面、曲面等也可以为不规则的拼接面。\n\n[0081]具体地，所述第一微型发光二极管显示面板与第二微型发光二极管显示面板的拼接结构通过银浆或各向异性导电(ACF)浆连接。所述控制板34为源极驱动板，源极驱动板通过连接的绑定引线来控制第一微型发光二极管显示面板与第二微型发光二极管显示面板的集成显示。\n\n[0082]以上对本申请实施例所提供的一种微型发光二极管拼接显示屏及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10958, 24012, '技术领域\n\n[0001]本发明涉及显示技术领域，特别涉及一种量子点彩膜基板及其制备方法、显示装置。\n\n背景技术\n\n[0002]每当受到光的刺激，量子点便会发出非常纯净的有色光线，光线的颜色由量子点的组成材料和大小形状决定，一般颗粒若越大，会吸收长波，颗粒越小，会吸收短波。8纳米大小的量子点，可吸收长波的红色，显示出蓝色，2纳米大小的量子点，可吸收短波的蓝色，呈现出红色。使用量子点材料可以作为过滤光线，还原图像色彩，增加显示屏的色域，因此量子点色片(Quantum dot colour filter)具有高色域、宽视角的技术特点，搭配背光技术能够表现出优异的画质，是未来显示技术中最具竞争力的产品。\n\n[0003]目前应用量子点与色阻结合以形成量子点彩膜层，该量子点彩膜层的显示技术尚无量产，现有制备技术首先将量子点材料制备成溶液状，采用喷墨打印技术精准对位每一个色阻块上喷涂量子点溶液，然后干燥量子点溶液，形成量子块，在这个过程中色阻块上的光刻胶的聚合物掺杂到量子点溶液，降低量子点块在信赖性测试中的出光效率。\n\n[0004]综上所述，需要提出一种量子点彩膜基板及其制备方法、显示装置，来解决上述喷墨打印技术制备量子块的过程中，色阻块上的光刻胶的聚合物掺杂到量子点溶液，干燥后形成的量子点块在信赖性测试中的出光效率较差的技术问题。\n\n发明内容\n\n[0005]本发明提供一种量子点彩膜基板及其制备方法、显示装置，能够解决现有的喷墨打印技术制备量子块的过程中，色阻块上的光刻胶的聚合物掺杂到量子点溶液，干燥后形成的量子点块在信赖性测试中的出光效率较差的技术问题。\n\n[0006]本发明提供的技术方案如下：\n\n[0007]本发明实施例提供一种量子点彩膜基板的制备方法，所述方法包括：\n\n[0008]步骤S10，提供一衬底，在所述衬底下方制备色阻层，所述色阻层包括阵列设置的R色阻块、G色阻块和B色阻块，其中，所述R色阻块、所述G色阻块和所述B色阻块均具有上宽下窄的结构，宽顶面贴合于所述衬底底面上。\n\n[0009]步骤S20，提供硅基板，在所述硅基板上形成量子点层，所述量子点层包括红色量子点和绿色量子点的混合膜层。\n\n[0010]步骤S30，将所述量子点层与所述色阻层加热后接触，保温预设时间后，冷却至室温，然后在剥离所述硅基板的过程中，将至少与所述R色阻块和所述G色阻块接触部分所述量子点层转印至所述R色阻块和所述G色阻块表面上，以使所述R色阻块和所述G色阻块的窄顶面上形成量子点块。\n\n[0011]根据本发明一优选实施例，步骤S30还包括：将量子点层与所述B色阻块接触部分也转印至所述B色阻块表面。\n\n[0012]根据本发明一优选实施例，步骤S20具体还包括：向所述B色阻块内添加高折射率散射粒子，并对所述B色阻表面做亲水处理；其中，所述高折射率散射粒子为二氧化钛、氧化锆或钛酸钡或二氧化钛中的一种晶体材料或一种以上晶体材料，晶体材料占所述B色阻的质量分数为0.5至8％。\n\n[0013]根据本发明一优选实施例，步骤S20还包括：在所述量子点块外围制备阻隔层，所述阻隔层的材料为氧化硅和氮化硅中一种材料或两种组合材料，膜厚设置1nm至50nm。\n\n[0014]根据本发明一优选实施例，所述阻隔层对应所述R色阻块和所述G色阻块位置上制备金属层，所述金属层为纳米银、纳米银和二氧化硅复合材料、纳米银和二氧化钛复合材料中的一种材料或两种以上组合材料，膜厚为1nm至50nm。\n\n[0015]依据上述实施例的量子点彩膜基板的制备方法，本发明还提供一种量子点彩膜基板，所述量子点彩膜基板包括：\n\n[0016]衬底；\n\n[0017]色阻层，位于所述衬底下方，包括阵列设置的阵列设置的R色阻块、G色阻块和B色阻块；\n\n[0018]量子点层，包括阵列设置的量子块，所述量子块为红色量子点和绿色量子点的混合膜层；\n\n[0019]其中，所述R色阻块、所述G色阻块和所述B色阻块均具有上宽下窄的结构，宽顶面贴合于所述衬底底面上，至少所述R色阻块和所述G色阻块的窄底面下方设置有所述量子块。\n\n[0020]根据本发明一优选实施例，所述上宽下窄的结构的截面形状为倒立等腰梯形。\n\n[0021]根据本发明一优选实施例，所述B色阻块下方对位设置有所述量子块。\n\n[0022]根据本发明一优选实施例，所述B色阻块下方未设置有所述量子块，所述B色阻块添加有高折射率散射粒子。\n\n[0023]根据本发明一优选实施例，所述量子块外围设置有阻隔层，所述阻隔层的材料为为氧化硅和氮化硅中一种材料或两种组合材料。\n\n[0024]根据本发明一优选实施例，所述阻隔层对应所述R色阻块和所述G色阻块位置上设置有金属层，所述金属层的材料至少包括银。\n\n[0025]根据本发明一优选实施例，所述高折射率散射粒子的材料为二氧化钛、氧化锆、钛酸钡中一种材料或一种以上组合材料。\n\n[0026]依据上述实施例的量子点彩膜基板，本发明还提供一种显示装置，所述显示装置包括上述实施例的量子点彩膜基板和Micro-LED背光源，其中，所述量子点彩膜基板位于所述Micro-LED背光源出光侧。\n\n[0027]有益效果：本发明实施例提供一种量子点彩膜基板及其制备方法、显示装置，该量子点彩膜基板的制备方法中首先形成具有上宽下窄的结构的R色阻块、G色阻块和B色阻块，然后在硅基板上形成量子点层，随后将量子点层的界面与色阻层的界面接触，在剥离硅基板的过程中，将至少与R色阻块和G色阻块接触部分量子点层转印至R色阻块和G色阻块表面上，以使R色阻块和G色阻块的窄顶面上形成量子点块，避免了喷墨打印技术的光刻胶的聚合物掺杂到量子点溶液中的情况，即避免现有制备技术中的光刻胶技术对量子点材料光效和信赖性的较大影响，因此本发明采用转印方法制备的量子块的出光效率和量子点材料利用率均较高。\n\n附图说明\n\n[0028]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0029]图1为本发明提供一种量子点块与色阻块结合一种结构示意图。\n\n[0030]图2为本发明提供一种量子点色阻与现有技术量子点色阻的结构示意图。\n\n[0031]图3至5为本发明提供一种量子点彩膜基板的第一种至第三种结构示意图。\n\n[0032]图6至8为本发明提供一种显示装置的第一种至第三种结构示意图。\n\n[0033]图9为本发明提供一种显示装置制备一种流程中结构示意图。\n\n[0034]图10至12为本发明提供一种量子点彩膜基板的第四种至第六种结构示意图。\n\n[0035]图13至15为本发明提供一种显示装置的第四种至第六种结构示意图。\n\n[0036]图16为本发明提供一种显示装置制备另一种流程中结构示意图。\n\n[0037]图17为本发明提供一种色阻块的结构与排布示意图。\n\n[0038]图18至图20为本发明提供一种与色阻块对位的量子点块的结构与排布示意图。\n\n具体实施方式\n\n[0039]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示，图中虚线表示在结构中并不存在的，仅仅说明结构的形状和位置。\n\n[0040]本发明针对现有的喷墨打印技术制备量子块的过程中，色阻块上的光刻胶的聚合物掺杂到量子点溶液中，干燥后形成的量子点块在信赖性测试中的出光效率较差的技术问题，本实施例能够解决该缺陷。\n\n[0041]为了解决上述技术问题，本发明提供一种量子点彩膜基板的制备方法，所述方法包括：\n\n[0042]步骤S10，提供一衬底，在所述衬底下方制备色阻层，所述色阻层包括阵列设置的R色阻块、G色阻块和B色阻块，其中，所述R色阻块、所述G色阻块和所述B色阻块均具有上宽下窄的结构，宽顶面贴合于所述衬底底面上；\n\n[0043]步骤S20，提供硅基板，在所述硅基板上形成量子点层，所述量子点层包括红色量子点和绿色量子点的混合膜层；\n\n[0044]步骤S30，将所述量子点层与所述色阻层加热后接触，保温预设时间后，冷却至室温，然后在剥离所述硅基板的过程中，将至少与所述R色阻块和所述G色阻块接触部分所述量子点层转印至所述R色阻块和所述G色阻块表面上，以使所述R色阻块和所述G色阻块的窄顶面上形成量子点块。\n\n[0045]优选地，步骤S30还包括：将量子点层与所述B色阻块接触部分也转印至所述B色阻块表面，在所述量子点块外围制备阻隔层，所述阻隔层的材料为氧化硅和氮化硅中一种材料或两种组合材料，膜厚设置1nm至50nm。所述阻隔层对应所述R色阻块和所述G色阻块位置上制备金属层，所述金属层为纳米银、纳米银和二氧化硅复合材料、纳米银和二氧化钛复合材料中的一种材料或两种以上组合材料，膜厚为1nm至50nm。\n\n[0046]优选地，步骤S20具体还包括：向所述B色阻块内添加高折射率散射粒子，并对所述B色阻表面做亲水处理；其中，所述高折射率散射粒子为二氧化钛、氧化锆或钛酸钡或二氧化钛中的一种晶体材料或一种以上晶体材料，晶体材料占所述B色阻的质量分数为0.5至8％。在所述量子点块外围制备阻隔层，所述阻隔层的材料为氧化硅和氮化硅中一种材料或两种组合材料，膜厚设置1nm至50nm。所述阻隔层对应所述R色阻块和所述G色阻块位置上制备金属层，所述金属层为纳米银、纳米银和二氧化硅复合材料、纳米银和二氧化钛复合材料中的一种材料或两种以上组合材料，膜厚为1nm至50nm。\n\n[0047]本发明的量子点彩膜基板的制备方法中首先形成具有上宽下窄的结构的R色阻块、G色阻块和B色阻块，然后在硅基板上形成量子点层，随后将量子点层的界面与色阻层的界面接触，在剥离硅基板的过程中，将至少与R色阻块和G色阻块接触部分量子点层转印至R色阻块和G色阻块表面上，以使R色阻块和G色阻块的窄顶面上形成量子点块，避免了喷墨打印技术的光刻胶的聚合物掺杂到量子点溶液中的情况，即避免现有制备技术中的光刻胶技术对量子点材料光效和信赖性的较大影响，因此本发明采用转印方法制备的量子块的出光效率和量子点材料利用率均较高。\n\n[0048]依据上述实施例的量子点彩膜基板的制备方法制备有对应的量子点彩膜基板，该量子点彩膜基板包括衬底、位于衬底下方的色阻层、以及位于色阻层下方的量子点层，其中，色阻层包括上宽下窄的结构的R色阻块、G色阻块和B色阻块，量子点层，包括阵列设置的量子块，量子块为红色量子点和绿色量子点的混合膜层，至少与R色阻块和G色阻块窄底面下方设置有量子块；另外本发明的量子块为红色量子点和绿色量子点的混合膜层，R色阻块和G色阻块上的量子块的结构相同，无需刻意精准对位，避免喷墨打印技术需要精准对位每个色阻块，因此本发明的转印方法相对于喷墨打方法不受大尺寸、高分辨率显示面板的限制，可制备精度较高的量子点块，可满足高分辨率要求。还有本发明中的上宽下窄的结构的R色阻块、G色阻块和B色阻块能够明显降低相邻色阻块光线串扰现象，提高量子点彩膜基板的出光品质。\n\n[0049]具体地，如图1所示，本发明实施例提供一种量子点块与色阻块叠加的示意图，衬底11下方依次设置有色阻块12和量子块13，色阻块12和量子块13外围依次设置有阻隔层14和金属层15，色阻块12为具有上宽下窄的结构，量子块13位于窄顶面上，优选为倒立的梯形，倒立的梯形的水平线的倾斜夹角θ为15°至45°，倾斜夹角减小(梯形设计)的色阻设计能够明显降低量子点彩膜基板像素间串扰。色阻块12的高度h1为1um至5um，量子块13的高度h2为1um至10um，阻隔层14的厚度为1nm至50nm，金属层15的厚度为1nm至50nm。色阻块12的材料包括SPR 220-4.5体系的R/G/B色阻，量子块13为红色量子点和绿色量子点的混合膜层，绿色量子点的材料包括ZnCdSe2、InP、Cd2SSe中一种或一种以上组合材料，红色量子点的材料包括CdSe、Cd2SeTe、InAs中一种或一种以上组合材料。阻隔层14的材料为为氧化硅和氮化硅中一种材料或两种组合材料，金属层15的材料至少包括银。Ag纳米层，用于构建“表面等离子体共振层”，提升发光亮度，金属层15要求特征吸收峰范围优选为430nm-500nm。\n\n[0050]为了说明本发明的色阻块12的形状优于现有技术的色阻块12’结构，如图2所示，发明人将两种色阻块制备在同一个衬底11上，通过相同的光线射向量子块13和量子块13’，本发明的色阻块12表面设置有金属层，金属层至少包括银，银膜构成反射层，再加上色阻块12本身具有上宽下窄的结构，倾斜的斜面，光线入射到斜面时，法线垂直于斜面上，相对于法线垂直于竖直面上，增加了入射角度，容易发生反射。出射光至在色阻块12的侧边缘的倾斜面上，再加上包裹的金属层15，毫无意义地可以得出最终从色阻块12的贴附衬底11的一侧射出，避免相邻色阻块之间发生混色。现有技术的量子块13’出射光线S2在色阻块12表面处未发生反射，直接射向向相邻的色阻块，造成相邻色阻块之间发生混色，导致显示面出现色差。可知本发明通过改变色阻块12的形状，可提升色阻块12滤光性能。\n\n[0051]对现有的量子点彩膜基板的基础上改进，本发明实施例得到了六种性能优异的量子点彩膜基板，得到对应的六种显示装置，如图3-14。根据B色阻块是否设置量子点块，本发明采用两个具体实施例进行说明量子点加色阻的具体结构。\n\n[0052]图3至9为实施例一的具体附图，实施例一如下：\n\n[0053]如图3所示，本发明提供一种量子点彩膜基板100的第一种结构示意图。量子点彩膜基板100包括衬底101、位于衬底101下方的色阻层110、以及位于色阻层110下方的量子点层120，其中，色阻层110包括阵列设置的R色阻块121、G色阻块122以及B色阻块113，量子点层120包括阵列设置的量子块，例如量子块121、量子块122和量子块123，量子块121、量子块122和量子块123均为红色量子点和绿色量子点的混合膜层，绿色量子点的材料包括ZnCdSe2、InP、Cd2SSe中一种或一种以上组合材料，红色量子点的材料包括CdSe、Cd2SeTe、InAs中一种或一种以上组合材料。R色阻块121、G色阻块122以及B色阻块113的材料分别为SPR 220-4.5体系的R/G/B色阻。\n\n[0054]量子点块转印到对应的色阻块上，量子块121、量子块122和量子块123分别与R色阻块121、G色阻块122以及B色阻块113对位设置。经过转印后，量子点块滤光后，只有红色光可以穿透R色阻块121，只有绿光可以穿透G色阻块122，只有蓝光可以穿透B色阻块113，转印过程不需要特意对准特定颜色的色阻块，转印的过程相对于单色量子点层容易。由于R色阻块121、G色阻块122以及B色阻块113均设置有量子点块，入射光线经过相同的量子点块过滤后，均产生相同的效果，避免R/G/B三色光出光的色域的差异，从而提升量子点彩膜基板出射光线的品质。\n\n[0055]如图4所示，本发明提供一种量子点彩膜基板100的第二种结构示意图。本实施例的量子点彩膜基板100表面设置有阻隔层130，阻隔层130的材料为为氧化硅和氮化硅中一种材料或两种组合材料，用于阻隔水氧入侵量子层和色阻层。其余结构跟图3类似，此处不再赘述。\n\n[0056]如图5所示，本发明提供一种量子点彩膜基板100的第三种结构示意图。阻隔层130对应R色阻块111和G色阻块111位置上设置有金属层140，金属层140的材料至少包括银，Ag纳米层，用于构建“表面等离子体共振层”，提升发光亮度。另外R色阻块113上未设置金属层140，提升B色阻113穿透率，其余结构跟图4类似，此处不再赘述。\n\n[0057]对应上述3种量子点彩膜基板100，图6至8为本发明提供对应的3种显示装置。\n\n[0058]如图6所示，本发明实施例提供一种显示装置的第一种结构示意图。显示装置200包括图3中的量子点彩膜基板和Micro LED背光源210，其中，量子点彩膜基板位于MicroLED背光源210出光侧。Micro LED背光源210包括驱动电路板201和位于驱动电路板上的微型红色发光器件202、微型绿色发光器件203和微型蓝色发光器件204，微型红色发光器件202、微型绿色发光器件203和微型蓝色发光器件204分别与R色阻块121、G色阻块122以及B色阻块113对位设置，且相邻的两个微型发光器件之间设置有隔离墙205，量子点彩膜基板的结构跟图3相同，此处不再赘述。\n\n[0059]如图7所示，本发明实施例提供一种显示装置的第二种结构示意图。显示装置200包括图4中的量子点彩膜基板和Micro LED背光源210，Micro LED背光源210如图6中的类似，量子点彩膜基板的结构跟图4相同，此处不再赘述具体的结构。\n\n[0060]如图8所示，本发明实施例提供一种显示装置的第三种结构示意图。显示装置200包括图5中的量子点彩膜基板和Micro LED背光源210，Micro LED背光源210如图6中的类似，量子点彩膜基板的结构跟图5相同，此处不再赘述具体的结构。\n\n[0061]依据上述3种量子点彩膜基板100和对应的3种显示装置，本发明提供一种显示装置的制备方法，所述方法包括：\n\n[0062]步骤S10，提供一衬底，在所述衬底下方制备上宽下窄的结构的R色阻块、G色阻块和B色阻块。\n\n[0063]步骤S20，提供硅基板，在所述硅基板上形成量子点层，将量子点层与所述R色阻块、所述G色阻块和B色阻块接触部分转印至所述R色阻块、所述G色阻块和B色阻块表面上，并剥离所述硅基板，完成量子点彩膜基板的制备，其中，所述量子块为红色量子点和绿色量子点的混合膜层。\n\n[0064]步骤S30，将上述量子点彩膜基板与对应的Micro LED背光源对位设置，得到R/G/B的显示装置。\n\n[0065]优选地，步骤S20还包括：在所述量子点彩膜基板的外围制备阻隔层，所述阻隔层的材料为氧化硅和氮化硅中一种材料或两种组合材料，膜厚设置1nm至50nm。所述阻隔层对应所述R/G色阻块和所述量子点层位置上制备金属层，所述金属层为纳米银、纳米银和二氧化硅复合材料、纳米银和二氧化钛复合材料中的一种材料或两种以上组合材料，膜厚为1nm至50nm。\n\n[0066]如图9所示，本发明实施例提供一种显示装置的制备流程结构示意图。如图9中的(3a)至(3c)所示，提供Si基板，Si基板表面洁净化处理后，将ODTS涂布于Si基板表面成膜302，ODTS为十八烷基三氯硅及其衍生物，在ODTS膜层302上旋转涂布分散于正己烷溶液红绿量子点，形成量子点层303，膜厚为5um至20um。\n\n[0067]如图9中的(3d)至(3e)所示，PDMS基板上进行黄光制程图案化，形成R/G/B光刻胶层，光刻胶层界面与量子点层303接触，将量子点层303与R/G色阻块接触部分转印至R/G色阻块表面，加热50至100℃，保持时间为10min至60min，然后冷却至室温，快速将柔性基板PDMS从Si基板上剥离，完成量子点彩膜基板的制备。其中三个膜层界面剥离力：ODETS膜层302[0068]如图9中的(3f)所示，将上述量子点彩膜基板与对应的Micro LED背光源对位设置，得到R/G/B的图6中的显示装置，其中，Micro LED背光源包括驱动电路板201和位于驱动电路板上的微型红色发光器件202、微型绿色发光器件203和微型蓝色发光器件204，相邻的两个微型发光器件之间设置有隔离墙。\n\n[0069]特别说明一下，其他的结构显示装置的结构跟图6类似，阻隔层和金属层一般采用蒸镀或涂布工艺，完成转印制程后在量子层表面低温蒸镀氧化硅层或氮化硅层，膜厚为1nm至50nm，形成阻隔层，提升阻隔水氧性。在外侧常温溅射Ag金属层，膜厚1～50nm，形成金属层、为了提升量子点光转化效率，可在溅射完成金属层后在，选择性刻蚀B色阻块表面金属层，提升B色阻穿透率。\n\n[0070]在图3至图9中，本发明在量子点块转印至R色阻块121、G色阻块122以及B色阻块113下方，本发明的转印方法避免了喷墨打印技术的光刻胶的聚合物掺杂到量子点溶液中的情况，即避免现有制备技术中的光刻胶技术对量子点材料光效和信赖性的较大影响，另外量子块为红绿量子点混合的膜层，R色阻块121转印后量子点块后，只有红色光穿透，G色阻块122转印后量子点块后，只有绿色光穿透，B色阻块113转印后量子点块后，只有蓝色光可以穿透，可以有效提高R/G/B颜色光出射视角的差异性，避免大视角下显示出偏黄的画面产生，从而提高显示面板的显示品质。\n\n[0071]图10至16为实施例二的具体附图，实施例二如下：\n\n[0072]如图10所示，本发明提供一种量子点彩膜基板100的第四种结构示意图。量子点彩膜基板100包括：衬底101；色阻层110，位于衬底101下方，包括阵列设置的R色阻块121、G色阻块122以及B色阻块113，B色阻块113添加有高折射率散射粒子114，高折射率散射粒子114的材料为二氧化钛、氧化锆、钛酸钡中一种材料或一种以上组合材料；量子点层120，包括阵列设置的量子块，例如量子块121和量子块122，量子块121和量子块122分别与R色阻块121和G色阻块122对位设置，B色阻块114下方未设置量子块；其中，R色阻块121、G色阻块122以及B色阻块113的截面形状为上宽下窄的结构，宽底面贴合于衬底101底面，窄顶面贴合于量子块102的表面，上宽下窄的结构优选为倒立等腰梯形，量子块121和量子块122为红色量子点和绿色量子点的混合膜层，量子点层转印到对应的色阻块上，R色阻块121结合量子块121只有红色光穿透，G色阻块122结合量子块122只有绿色光穿透。绿色量子点的材料包括ZnCdSe2、InP、Cd2SSe中一种或一种以上组合材料，红色量子点的材料包括CdSe、Cd2SeTe、InAs中一种或一种以上组合材料。R色阻块121、G色阻块122以及B色阻块113的材料分别为SPR 220-4.5体系的R/G/B色阻。\n\n[0073]本实施例在量子点块转印至R色阻块121和G色阻块122下方，提高转印量子点材料利用率，本发明的转印方法避免了喷墨打印技术的光刻胶的聚合物掺杂到量子点溶液中的情况，即避免现有制备技术中的光刻胶技术对量子点材料光效和信赖性的较大影响，另外红光和绿光经过量子块和色阻块出射纯净的红光和绿光，蓝光经过高折射率散射粒子的折射后，同样出射纯净的蓝光，避免R/G/B三色光视角和色域的差异，从而提升量子点彩膜基板出射光线的品质。\n\n[0074]如图11所示，本发明提供一种量子点彩膜基板100的第五种结构示意图。量子点彩膜基板100表面设置有阻隔层130，阻隔层130的材料为为氧化硅和氮化硅中一种材料或两种组合材料，用于阻隔水氧入侵量子层和色阻层。其余结构跟图10类似，此处不再赘述。\n\n[0075]如图12所示，本发明提供一种量子点彩膜基板100的第六种结构示意图。阻隔层130对应R/G色阻块和量子点层120位置上设置有金属层140，金属层140的材料至少包括银，Ag纳米层，用于构建“表面等离子体共振层”，提升发光亮度。另外R色阻块113上未设置金属层140，提升B色阻113穿透率，其余结构跟图10类似，此处不再赘述。\n\n[0076]依据上述图10至图12中的三种量子点彩膜基板，本发明对应的提供三种显示装置。如图13所示，本发明实施例提供一种显示装置的一种结构示意图。显示装置200包括图10中的量子点彩膜基板和Micro LED背光源210，其中，量子点彩膜基板位于Micro LED背光源210出光侧。Micro LED背光源210包括驱动电路板201和位于驱动电路板上的微型红色发光器件202、微型绿色发光器件203和微型蓝色发光器件204，微型红色发光器件202、微型绿色发光器件203和微型蓝色发光器件204分别与R色阻块121、G色阻块122以及B色阻块113对位设置，且相邻的两个微型发光器件之间设置有隔离墙205，量子点彩膜基板的结构跟图10相同，此处不再赘述。\n\n[0077]如图14所示，本发明实施例提供一种显示装置的第二种结构示意图。显示装置200包括图11中的量子点彩膜基板和Micro LED背光源210，Micro LED背光源210如图13中的类似，量子点彩膜基板的结构跟图11相同，此处不再赘述具体的结构。\n\n[0078]如图15所示，本发明实施例提供一种显示装置的第三种结构示意图。显示装置200包括图12中的量子点彩膜基板和Micro LED背光源210，Micro LED背光源210如图12中的类似，量子点彩膜基板的结构跟图12相同，此处不再赘述具体的结构。\n\n[0079]依据上述图13至图15中的显示装置，本发明还提供一种显示装置的制备方法，所述方法包括：\n\n[0080]步骤S10，提供一衬底，在所述衬底上制备上宽下窄的结构的R色阻块、G色阻块和B色阻块，并向所述B色阻块掺杂高折射率散射粒子。\n\n[0081]步骤S20，提供硅基板，在所述硅基板上形成量子点层，将量子点层与所述R色阻块和所述G色阻块接触部分转印至所述R色阻块和所述G色阻块表面，并剥离所述硅基板，完成量子点彩膜基板的制备。\n\n[0082]步骤S30，将上述量子点彩膜基板与对应的Micro LED背光源对位设置，得到R/G/B的显示装置。\n\n[0083]优选地，步骤S10具体包括：在所述B色阻中添加二氧化钛、氧化锆或钛酸钡或二氧化钛中的一种晶体材料或一种以上晶体材料，晶体材料占所述B色阻的质量分数为0.5～8％，晶体材料的尺寸设置50nm至2000nm；并对所述B色阻表面做亲水处理，便于后续步骤S20中的量子点层选择性地转印在R色阻块和G色阻块上，不转印到所述B色阻上。\n\n[0084]优选地，步骤S20还包括：在所述量子点彩膜基板的外围制备阻隔层，所述阻隔层的材料为氧化硅和氮化硅中一种材料或两种组合材料，膜厚设置1nm至50nm。所述阻隔层对应所述R色阻块和G色阻块位置上制备金属层，所述金属层为纳米银、纳米银和二氧化硅复合材料、纳米银和二氧化钛复合材料中的一种材料或两种以上组合材料，膜厚为1nm至50nm。\n\n[0085]如图16所示，本发明实施例提供一种显示装置的制备流程结构示意图。如图16中的(13a)至(13c)所示，提供Si基板，Si基板表面洁净化处理后，将ODTS涂布于Si基板表面成膜302，ODTS为十八烷基三氯硅及其衍生物，在ODTS膜层302上旋转涂布分散于正己烷溶液红绿量子点，形成量子点层303，膜厚为5um至20um。\n\n[0086]如图16中的(13d)至(13e)所示，PDMS基板上进行黄光制程图案化，形成R/G/B光刻胶层，光刻胶层界面与量子点层303接触，将量子点层303与R/G色阻块接触部分转印至R/G色阻块表面，加热50至100℃，保持时间为10min至60min，然后冷却至室温，快速将柔性基板PDMS从Si基板上剥离，完成量子点彩膜基板的制备。其中三个膜层界面剥离力：ODETS膜层302[0087]如图16中的(13f)所示，将上述量子点彩膜基板与对应的Micro LED背光源对位设置，得到图13中的R/G/B的显示装置，其中，Micro LED背光源包括驱动电路板201和位于驱动电路板上的微型红色发光器件202、微型绿色发光器件203和微型蓝色发光器件204，相邻的两个微型发光器件之间设置有隔离墙。\n\n[0088]特别说明一下，其他的结构显示装置的结构跟图13类似，阻隔层和金属层一般采用蒸镀或涂布工艺，完成转印制程后在量子层表面低温蒸镀氮化硅或氧化硅层，膜厚为1nm至50nm，形成阻隔层，提升阻隔水氧性。在外侧常温溅射Ag金属层，膜厚1～50nm，形成金属层、为了提升量子点光转化效率，可在溅射完成金属层后在，选择性刻蚀掉B色阻块表面金属层，提升B色阻穿透率。\n\n[0089]另外向B色阻块中添加0.5～8wt％二氧化钛、氧化锆或钛酸钡或二氧化钛等尺寸50nm至2000nm的高折射率纳米材料，在蓝光光阻表面做亲水处理，再完成量子点层转印制程，可将量子点层选择性的转印在R色阻块和G色阻块表面，提高蓝光色阻透过率并扩散蓝光，降低R色阻块、G色阻块和B色阻块出射光亮度视角差异。其余的制备方法此处不再赘述。\n\n[0090]在图10至图16中，本发明在量子点块转印至R色阻块121和G色阻块122，B色阻块113下方未设置量子点块，B色阻块添加有高折射率散射粒子，红光和绿光经过量子块和色阻块出射纯净的红光和绿光，蓝光经过高折射率散射粒子的折射后，同样出射纯净的蓝光，避免R/G/B三色光视角和色域的差异，从而提升量子点彩膜基板出射光线的品质。\n\n[0091]如图17所示，本发明提供一种R色阻块、G色阻块和B色阻块的结构示意图。图17中的(a)中的R色阻块、G色阻块和B色阻块为方形凸台，按照R色阻块、G色阻块和B色阻块顺序依次排列，形成两排。图17中的(b)R色阻块、G色阻块和B色阻块为为圆形凸台，按照R色阻块、G色阻块和B色阻块顺序依次排列，形成两排。\n\n[0092]图18至图20为本发明提供一种量子点块结构示意图，在图18至图20中，量子点块一次同时转印至R色阻块、G色阻块和B色阻块，或一次同时转印至R色阻块和G色阻块，依据具体的量子点彩膜基板结构不同而不同，但是转印的过程和方法类似。\n\n[0093]如图18所示，量子点块为方形凸台，图18中的(c)采用上下两排进行转印，然后图18中的(d)进行下一列的两排进行转印，整个转印的图形呈方形阵列结构，一次转印两排量子点块。\n\n[0094]如图19至20所示，量子点块为圆形凸台，图19中的(c)第一转印过程中采用上下两排进行转印，然后图19中的(d)第二次转印过程中进行下一列的两排进行转印，整个转印的图形呈阵列结构。图20中的(c)第一转印过程中采用上下两排进行转印，然后图20中的(d)第二次转印过程中进行下一列的两排进行转印，整个转印的图形呈平行四边形阵列结构。进一步提升转印利用率，若量子点块的圆形截面直径D，第二次转印位置与第一次转印位置相比水平移动D/2，垂直移动0.9D。\n\n[0095]综上，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及显示技术领域，特别涉及一种量子点彩膜基板及其制备方法、显示装置。\n\n背景技术\n\n[0002]每当受到光的刺激，量子点便会发出非常纯净的有色光线，光线的颜色由量子点的组成材料和大小形状决定，一般颗粒若越大，会吸收长波，颗粒越小，会吸收短波。8纳米大小的量子点，可吸收长波的红色，显示出蓝色，2纳米大小的量子点，可吸收短波的蓝色，呈现出红色。使用量子点材料可以作为过滤光线，还原图像色彩，增加显示屏的色域，因此量子点色片(Quantum dot colour filter)具有高色域、宽视角的技术特点，搭配背光技术能够表现出优异的画质，是未来显示技术中最具竞争力的产品。\n\n[0003]目前应用量子点与色阻结合以形成量子点彩膜层，该量子点彩膜层的显示技术尚无量产，现有制备技术首先将量子点材料制备成溶液状，采用喷墨打印技术精准对位每一个色阻块上喷涂量子点溶液，然后干燥量子点溶液，形成量子块，在这个过程中色阻块上的光刻胶的聚合物掺杂到量子点溶液，降低量子点块在信赖性测试中的出光效率。\n\n[0004]综上所述，需要提出一种量子点彩膜基板及其制备方法、显示装置，来解决上述喷墨打印技术制备量子块的过程中，色阻块上的光刻胶的聚合物掺杂到量子点溶液，干燥后形成的量子点块在信赖性测试中的出光效率较差的技术问题。\n\n发明内容\n\n[0005]本发明提供一种量子点彩膜基板及其制备方法、显示装置，能够解决现有的喷墨打印技术制备量子块的过程中，色阻块上的光刻胶的聚合物掺杂到量子点溶液，干燥后形成的量子点块在信赖性测试中的出光效率较差的技术问题。\n\n[0006]本发明提供的技术方案如下：\n\n[0007]本发明实施例提供一种量子点彩膜基板的制备方法，所述方法包括：\n\n[0008]步骤S10，提供一衬底，在所述衬底下方制备色阻层，所述色阻层包括阵列设置的R色阻块、G色阻块和B色阻块，其中，所述R色阻块、所述G色阻块和所述B色阻块均具有上宽下窄的结构，宽顶面贴合于所述衬底底面上。\n\n[0009]步骤S20，提供硅基板，在所述硅基板上形成量子点层，所述量子点层包括红色量子点和绿色量子点的混合膜层。\n\n[0010]步骤S30，将所述量子点层与所述色阻层加热后接触，保温预设时间后，冷却至室温，然后在剥离所述硅基板的过程中，将至少与所述R色阻块和所述G色阻块接触部分所述量子点层转印至所述R色阻块和所述G色阻块表面上，以使所述R色阻块和所述G色阻块的窄顶面上形成量子点块。\n\n[0011]根据本发明一优选实施例，步骤S30还包括：将量子点层与所述B色阻块接触部分也转印至所述B色阻块表面。\n\n[0012]根据本发明一优选实施例，步骤S20具体还包括：向所述B色阻块内添加高折射率散射粒子，并对所述B色阻表面做亲水处理；其中，所述高折射率散射粒子为二氧化钛、氧化锆或钛酸钡或二氧化钛中的一种晶体材料或一种以上晶体材料，晶体材料占所述B色阻的质量分数为0.5至8％。\n\n[0013]根据本发明一优选实施例，步骤S20还包括：在所述量子点块外围制备阻隔层，所述阻隔层的材料为氧化硅和氮化硅中一种材料或两种组合材料，膜厚设置1nm至50nm。\n\n[0014]根据本发明一优选实施例，所述阻隔层对应所述R色阻块和所述G色阻块位置上制备金属层，所述金属层为纳米银、纳米银和二氧化硅复合材料、纳米银和二氧化钛复合材料中的一种材料或两种以上组合材料，膜厚为1nm至50nm。\n\n[0015]依据上述实施例的量子点彩膜基板的制备方法，本发明还提供一种量子点彩膜基板，所述量子点彩膜基板包括：\n\n[0016]衬底；\n\n[0017]色阻层，位于所述衬底下方，包括阵列设置的阵列设置的R色阻块、G色阻块和B色阻块；\n\n[0018]量子点层，包括阵列设置的量子块，所述量子块为红色量子点和绿色量子点的混合膜层；\n\n[0019]其中，所述R色阻块、所述G色阻块和所述B色阻块均具有上宽下窄的结构，宽顶面贴合于所述衬底底面上，至少所述R色阻块和所述G色阻块的窄底面下方设置有所述量子块。\n\n[0020]根据本发明一优选实施例，所述上宽下窄的结构的截面形状为倒立等腰梯形。\n\n[0021]根据本发明一优选实施例，所述B色阻块下方对位设置有所述量子块。\n\n[0022]根据本发明一优选实施例，所述B色阻块下方未设置有所述量子块，所述B色阻块添加有高折射率散射粒子。\n\n[0023]根据本发明一优选实施例，所述量子块外围设置有阻隔层，所述阻隔层的材料为为氧化硅和氮化硅中一种材料或两种组合材料。\n\n[0024]根据本发明一优选实施例，所述阻隔层对应所述R色阻块和所述G色阻块位置上设置有金属层，所述金属层的材料至少包括银。\n\n[0025]根据本发明一优选实施例，所述高折射率散射粒子的材料为二氧化钛、氧化锆、钛酸钡中一种材料或一种以上组合材料。\n\n[0026]依据上述实施例的量子点彩膜基板，本发明还提供一种显示装置，所述显示装置包括上述实施例的量子点彩膜基板和Micro-LED背光源，其中，所述量子点彩膜基板位于所述Micro-LED背光源出光侧。\n\n[0027]有益效果：本发明实施例提供一种量子点彩膜基板及其制备方法、显示装置，该量子点彩膜基板的制备方法中首先形成具有上宽下窄的结构的R色阻块、G色阻块和B色阻块，然后在硅基板上形成量子点层，随后将量子点层的界面与色阻层的界面接触，在剥离硅基板的过程中，将至少与R色阻块和G色阻块接触部分量子点层转印至R色阻块和G色阻块表面上，以使R色阻块和G色阻块的窄顶面上形成量子点块，避免了喷墨打印技术的光刻胶的聚合物掺杂到量子点溶液中的情况，即避免现有制备技术中的光刻胶技术对量子点材料光效和信赖性的较大影响，因此本发明采用转印方法制备的量子块的出光效率和量子点材料利用率均较高。\n\n附图说明\n\n[0028]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0029]图1为本发明提供一种量子点块与色阻块结合一种结构示意图。\n\n[0030]图2为本发明提供一种量子点色阻与现有技术量子点色阻的结构示意图。\n\n[0031]图3至5为本发明提供一种量子点彩膜基板的第一种至第三种结构示意图。\n\n[0032]图6至8为本发明提供一种显示装置的第一种至第三种结构示意图。\n\n[0033]图9为本发明提供一种显示装置制备一种流程中结构示意图。\n\n[0034]图10至12为本发明提供一种量子点彩膜基板的第四种至第六种结构示意图。\n\n[0035]图13至15为本发明提供一种显示装置的第四种至第六种结构示意图。\n\n[0036]图16为本发明提供一种显示装置制备另一种流程中结构示意图。\n\n[0037]图17为本发明提供一种色阻块的结构与排布示意图。\n\n[0038]图18至图20为本发明提供一种与色阻块对位的量子点块的结构与排布示意图。\n\n具体实施方式\n\n[0039]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示，图中虚线表示在结构中并不存在的，仅仅说明结构的形状和位置。\n\n[0040]本发明针对现有的喷墨打印技术制备量子块的过程中，色阻块上的光刻胶的聚合物掺杂到量子点溶液中，干燥后形成的量子点块在信赖性测试中的出光效率较差的技术问题，本实施例能够解决该缺陷。\n\n[0041]为了解决上述技术问题，本发明提供一种量子点彩膜基板的制备方法，所述方法包括：\n\n[0042]步骤S10，提供一衬底，在所述衬底下方制备色阻层，所述色阻层包括阵列设置的R色阻块、G色阻块和B色阻块，其中，所述R色阻块、所述G色阻块和所述B色阻块均具有上宽下窄的结构，宽顶面贴合于所述衬底底面上；\n\n[0043]步骤S20，提供硅基板，在所述硅基板上形成量子点层，所述量子点层包括红色量子点和绿色量子点的混合膜层；\n\n[0044]步骤S30，将所述量子点层与所述色阻层加热后接触，保温预设时间后，冷却至室温，然后在剥离所述硅基板的过程中，将至少与所述R色阻块和所述G色阻块接触部分所述量子点层转印至所述R色阻块和所述G色阻块表面上，以使所述R色阻块和所述G色阻块的窄顶面上形成量子点块。\n\n[0045]优选地，步骤S30还包括：将量子点层与所述B色阻块接触部分也转印至所述B色阻块表面，在所述量子点块外围制备阻隔层，所述阻隔层的材料为氧化硅和氮化硅中一种材料或两种组合材料，膜厚设置1nm至50nm。所述阻隔层对应所述R色阻块和所述G色阻块位置上制备金属层，所述金属层为纳米银、纳米银和二氧化硅复合材料、纳米银和二氧化钛复合材料中的一种材料或两种以上组合材料，膜厚为1nm至50nm。\n\n[0046]优选地，步骤S20具体还包括：向所述B色阻块内添加高折射率散射粒子，并对所述B色阻表面做亲水处理；其中，所述高折射率散射粒子为二氧化钛、氧化锆或钛酸钡或二氧化钛中的一种晶体材料或一种以上晶体材料，晶体材料占所述B色阻的质量分数为0.5至8％。在所述量子点块外围制备阻隔层，所述阻隔层的材料为氧化硅和氮化硅中一种材料或两种组合材料，膜厚设置1nm至50nm。所述阻隔层对应所述R色阻块和所述G色阻块位置上制备金属层，所述金属层为纳米银、纳米银和二氧化硅复合材料、纳米银和二氧化钛复合材料中的一种材料或两种以上组合材料，膜厚为1nm至50nm。\n\n[0047]本发明的量子点彩膜基板的制备方法中首先形成具有上宽下窄的结构的R色阻块、G色阻块和B色阻块，然后在硅基板上形成量子点层，随后将量子点层的界面与色阻层的界面接触，在剥离硅基板的过程中，将至少与R色阻块和G色阻块接触部分量子点层转印至R色阻块和G色阻块表面上，以使R色阻块和G色阻块的窄顶面上形成量子点块，避免了喷墨打印技术的光刻胶的聚合物掺杂到量子点溶液中的情况，即避免现有制备技术中的光刻胶技术对量子点材料光效和信赖性的较大影响，因此本发明采用转印方法制备的量子块的出光效率和量子点材料利用率均较高。\n\n[0048]依据上述实施例的量子点彩膜基板的制备方法制备有对应的量子点彩膜基板，该量子点彩膜基板包括衬底、位于衬底下方的色阻层、以及位于色阻层下方的量子点层，其中，色阻层包括上宽下窄的结构的R色阻块、G色阻块和B色阻块，量子点层，包括阵列设置的量子块，量子块为红色量子点和绿色量子点的混合膜层，至少与R色阻块和G色阻块窄底面下方设置有量子块；另外本发明的量子块为红色量子点和绿色量子点的混合膜层，R色阻块和G色阻块上的量子块的结构相同，无需刻意精准对位，避免喷墨打印技术需要精准对位每个色阻块，因此本发明的转印方法相对于喷墨打方法不受大尺寸、高分辨率显示面板的限制，可制备精度较高的量子点块，可满足高分辨率要求。还有本发明中的上宽下窄的结构的R色阻块、G色阻块和B色阻块能够明显降低相邻色阻块光线串扰现象，提高量子点彩膜基板的出光品质。\n\n[0049]具体地，如图1所示，本发明实施例提供一种量子点块与色阻块叠加的示意图，衬底11下方依次设置有色阻块12和量子块13，色阻块12和量子块13外围依次设置有阻隔层14和金属层15，色阻块12为具有上宽下窄的结构，量子块13位于窄顶面上，优选为倒立的梯形，倒立的梯形的水平线的倾斜夹角θ为15°至45°，倾斜夹角减小(梯形设计)的色阻设计能够明显降低量子点彩膜基板像素间串扰。色阻块12的高度h1为1um至5um，量子块13的高度h2为1um至10um，阻隔层14的厚度为1nm至50nm，金属层15的厚度为1nm至50nm。色阻块12的材料包括SPR 220-4.5体系的R/G/B色阻，量子块13为红色量子点和绿色量子点的混合膜层，绿色量子点的材料包括ZnCdSe2、InP、Cd2SSe中一种或一种以上组合材料，红色量子点的材料包括CdSe、Cd2SeTe、InAs中一种或一种以上组合材料。阻隔层14的材料为为氧化硅和氮化硅中一种材料或两种组合材料，金属层15的材料至少包括银。Ag纳米层，用于构建“表面等离子体共振层”，提升发光亮度，金属层15要求特征吸收峰范围优选为430nm-500nm。\n\n[0050]为了说明本发明的色阻块12的形状优于现有技术的色阻块12’结构，如图2所示，发明人将两种色阻块制备在同一个衬底11上，通过相同的光线射向量子块13和量子块13’，本发明的色阻块12表面设置有金属层，金属层至少包括银，银膜构成反射层，再加上色阻块12本身具有上宽下窄的结构，倾斜的斜面，光线入射到斜面时，法线垂直于斜面上，相对于法线垂直于竖直面上，增加了入射角度，容易发生反射。出射光至在色阻块12的侧边缘的倾斜面上，再加上包裹的金属层15，毫无意义地可以得出最终从色阻块12的贴附衬底11的一侧射出，避免相邻色阻块之间发生混色。现有技术的量子块13’出射光线S2在色阻块12表面处未发生反射，直接射向向相邻的色阻块，造成相邻色阻块之间发生混色，导致显示面出现色差。可知本发明通过改变色阻块12的形状，可提升色阻块12滤光性能。\n\n[0051]对现有的量子点彩膜基板的基础上改进，本发明实施例得到了六种性能优异的量子点彩膜基板，得到对应的六种显示装置，如图3-14。根据B色阻块是否设置量子点块，本发明采用两个具体实施例进行说明量子点加色阻的具体结构。\n\n[0052]图3至9为实施例一的具体附图，实施例一如下：\n\n[0053]如图3所示，本发明提供一种量子点彩膜基板100的第一种结构示意图。量子点彩膜基板100包括衬底101、位于衬底101下方的色阻层110、以及位于色阻层110下方的量子点层120，其中，色阻层110包括阵列设置的R色阻块121、G色阻块122以及B色阻块113，量子点层120包括阵列设置的量子块，例如量子块121、量子块122和量子块123，量子块121、量子块122和量子块123均为红色量子点和绿色量子点的混合膜层，绿色量子点的材料包括ZnCdSe2、InP、Cd2SSe中一种或一种以上组合材料，红色量子点的材料包括CdSe、Cd2SeTe、InAs中一种或一种以上组合材料。R色阻块121、G色阻块122以及B色阻块113的材料分别为SPR 220-4.5体系的R/G/B色阻。\n\n[0054]量子点块转印到对应的色阻块上，量子块121、量子块122和量子块123分别与R色阻块121、G色阻块122以及B色阻块113对位设置。经过转印后，量子点块滤光后，只有红色光可以穿透R色阻块121，只有绿光可以穿透G色阻块122，只有蓝光可以穿透B色阻块113，转印过程不需要特意对准特定颜色的色阻块，转印的过程相对于单色量子点层容易。由于R色阻块121、G色阻块122以及B色阻块113均设置有量子点块，入射光线经过相同的量子点块过滤后，均产生相同的效果，避免R/G/B三色光出光的色域的差异，从而提升量子点彩膜基板出射光线的品质。\n\n[0055]如图4所示，本发明提供一种量子点彩膜基板100的第二种结构示意图。本实施例的量子点彩膜基板100表面设置有阻隔层130，阻隔层130的材料为为氧化硅和氮化硅中一种材料或两种组合材料，用于阻隔水氧入侵量子层和色阻层。其余结构跟图3类似，此处不再赘述。\n\n[0056]如图5所示，本发明提供一种量子点彩膜基板100的第三种结构示意图。阻隔层130对应R色阻块111和G色阻块111位置上设置有金属层140，金属层140的材料至少包括银，Ag纳米层，用于构建“表面等离子体共振层”，提升发光亮度。另外R色阻块113上未设置金属层140，提升B色阻113穿透率，其余结构跟图4类似，此处不再赘述。\n\n[0057]对应上述3种量子点彩膜基板100，图6至8为本发明提供对应的3种显示装置。\n\n[0058]如图6所示，本发明实施例提供一种显示装置的第一种结构示意图。显示装置200包括图3中的量子点彩膜基板和Micro LED背光源210，其中，量子点彩膜基板位于MicroLED背光源210出光侧。Micro LED背光源210包括驱动电路板201和位于驱动电路板上的微型红色发光器件202、微型绿色发光器件203和微型蓝色发光器件204，微型红色发光器件202、微型绿色发光器件203和微型蓝色发光器件204分别与R色阻块121、G色阻块122以及B色阻块113对位设置，且相邻的两个微型发光器件之间设置有隔离墙205，量子点彩膜基板的结构跟图3相同，此处不再赘述。\n\n[0059]如图7所示，本发明实施例提供一种显示装置的第二种结构示意图。显示装置200包括图4中的量子点彩膜基板和Micro LED背光源210，Micro LED背光源210如图6中的类似，量子点彩膜基板的结构跟图4相同，此处不再赘述具体的结构。\n\n[0060]如图8所示，本发明实施例提供一种显示装置的第三种结构示意图。显示装置200包括图5中的量子点彩膜基板和Micro LED背光源210，Micro LED背光源210如图6中的类似，量子点彩膜基板的结构跟图5相同，此处不再赘述具体的结构。\n\n[0061]依据上述3种量子点彩膜基板100和对应的3种显示装置，本发明提供一种显示装置的制备方法，所述方法包括：\n\n[0062]步骤S10，提供一衬底，在所述衬底下方制备上宽下窄的结构的R色阻块、G色阻块和B色阻块。\n\n[0063]步骤S20，提供硅基板，在所述硅基板上形成量子点层，将量子点层与所述R色阻块、所述G色阻块和B色阻块接触部分转印至所述R色阻块、所述G色阻块和B色阻块表面上，并剥离所述硅基板，完成量子点彩膜基板的制备，其中，所述量子块为红色量子点和绿色量子点的混合膜层。\n\n[0064]步骤S30，将上述量子点彩膜基板与对应的Micro LED背光源对位设置，得到R/G/B的显示装置。\n\n[0065]优选地，步骤S20还包括：在所述量子点彩膜基板的外围制备阻隔层，所述阻隔层的材料为氧化硅和氮化硅中一种材料或两种组合材料，膜厚设置1nm至50nm。所述阻隔层对应所述R/G色阻块和所述量子点层位置上制备金属层，所述金属层为纳米银、纳米银和二氧化硅复合材料、纳米银和二氧化钛复合材料中的一种材料或两种以上组合材料，膜厚为1nm至50nm。\n\n[0066]如图9所示，本发明实施例提供一种显示装置的制备流程结构示意图。如图9中的(3a)至(3c)所示，提供Si基板，Si基板表面洁净化处理后，将ODTS涂布于Si基板表面成膜302，ODTS为十八烷基三氯硅及其衍生物，在ODTS膜层302上旋转涂布分散于正己烷溶液红绿量子点，形成量子点层303，膜厚为5um至20um。\n\n[0067]如图9中的(3d)至(3e)所示，PDMS基板上进行黄光制程图案化，形成R/G/B光刻胶层，光刻胶层界面与量子点层303接触，将量子点层303与R/G色阻块接触部分转印至R/G色阻块表面，加热50至100℃，保持时间为10min至60min，然后冷却至室温，快速将柔性基板PDMS从Si基板上剥离，完成量子点彩膜基板的制备。其中三个膜层界面剥离力：ODETS膜层302[0068]如图9中的(3f)所示，将上述量子点彩膜基板与对应的Micro LED背光源对位设置，得到R/G/B的图6中的显示装置，其中，Micro LED背光源包括驱动电路板201和位于驱动电路板上的微型红色发光器件202、微型绿色发光器件203和微型蓝色发光器件204，相邻的两个微型发光器件之间设置有隔离墙。\n\n[0069]特别说明一下，其他的结构显示装置的结构跟图6类似，阻隔层和金属层一般采用蒸镀或涂布工艺，完成转印制程后在量子层表面低温蒸镀氧化硅层或氮化硅层，膜厚为1nm至50nm，形成阻隔层，提升阻隔水氧性。在外侧常温溅射Ag金属层，膜厚1～50nm，形成金属层、为了提升量子点光转化效率，可在溅射完成金属层后在，选择性刻蚀B色阻块表面金属层，提升B色阻穿透率。\n\n[0070]在图3至图9中，本发明在量子点块转印至R色阻块121、G色阻块122以及B色阻块113下方，本发明的转印方法避免了喷墨打印技术的光刻胶的聚合物掺杂到量子点溶液中的情况，即避免现有制备技术中的光刻胶技术对量子点材料光效和信赖性的较大影响，另外量子块为红绿量子点混合的膜层，R色阻块121转印后量子点块后，只有红色光穿透，G色阻块122转印后量子点块后，只有绿色光穿透，B色阻块113转印后量子点块后，只有蓝色光可以穿透，可以有效提高R/G/B颜色光出射视角的差异性，避免大视角下显示出偏黄的画面产生，从而提高显示面板的显示品质。\n\n[0071]图10至16为实施例二的具体附图，实施例二如下：\n\n[0072]如图10所示，本发明提供一种量子点彩膜基板100的第四种结构示意图。量子点彩膜基板100包括：衬底101；色阻层110，位于衬底101下方，包括阵列设置的R色阻块121、G色阻块122以及B色阻块113，B色阻块113添加有高折射率散射粒子114，高折射率散射粒子114的材料为二氧化钛、氧化锆、钛酸钡中一种材料或一种以上组合材料；量子点层120，包括阵列设置的量子块，例如量子块121和量子块122，量子块121和量子块122分别与R色阻块121和G色阻块122对位设置，B色阻块114下方未设置量子块；其中，R色阻块121、G色阻块122以及B色阻块113的截面形状为上宽下窄的结构，宽底面贴合于衬底101底面，窄顶面贴合于量子块102的表面，上宽下窄的结构优选为倒立等腰梯形，量子块121和量子块122为红色量子点和绿色量子点的混合膜层，量子点层转印到对应的色阻块上，R色阻块121结合量子块121只有红色光穿透，G色阻块122结合量子块122只有绿色光穿透。绿色量子点的材料包括ZnCdSe2、InP、Cd2SSe中一种或一种以上组合材料，红色量子点的材料包括CdSe、Cd2SeTe、InAs中一种或一种以上组合材料。R色阻块121、G色阻块122以及B色阻块113的材料分别为SPR 220-4.5体系的R/G/B色阻。\n\n[0073]本实施例在量子点块转印至R色阻块121和G色阻块122下方，提高转印量子点材料利用率，本发明的转印方法避免了喷墨打印技术的光刻胶的聚合物掺杂到量子点溶液中的情况，即避免现有制备技术中的光刻胶技术对量子点材料光效和信赖性的较大影响，另外红光和绿光经过量子块和色阻块出射纯净的红光和绿光，蓝光经过高折射率散射粒子的折射后，同样出射纯净的蓝光，避免R/G/B三色光视角和色域的差异，从而提升量子点彩膜基板出射光线的品质。\n\n[0074]如图11所示，本发明提供一种量子点彩膜基板100的第五种结构示意图。量子点彩膜基板100表面设置有阻隔层130，阻隔层130的材料为为氧化硅和氮化硅中一种材料或两种组合材料，用于阻隔水氧入侵量子层和色阻层。其余结构跟图10类似，此处不再赘述。\n\n[0075]如图12所示，本发明提供一种量子点彩膜基板100的第六种结构示意图。阻隔层130对应R/G色阻块和量子点层120位置上设置有金属层140，金属层140的材料至少包括银，Ag纳米层，用于构建“表面等离子体共振层”，提升发光亮度。另外R色阻块113上未设置金属层140，提升B色阻113穿透率，其余结构跟图10类似，此处不再赘述。\n\n[0076]依据上述图10至图12中的三种量子点彩膜基板，本发明对应的提供三种显示装置。如图13所示，本发明实施例提供一种显示装置的一种结构示意图。显示装置200包括图10中的量子点彩膜基板和Micro LED背光源210，其中，量子点彩膜基板位于Micro LED背光源210出光侧。Micro LED背光源210包括驱动电路板201和位于驱动电路板上的微型红色发光器件202、微型绿色发光器件203和微型蓝色发光器件204，微型红色发光器件202、微型绿色发光器件203和微型蓝色发光器件204分别与R色阻块121、G色阻块122以及B色阻块113对位设置，且相邻的两个微型发光器件之间设置有隔离墙205，量子点彩膜基板的结构跟图10相同，此处不再赘述。\n\n[0077]如图14所示，本发明实施例提供一种显示装置的第二种结构示意图。显示装置200包括图11中的量子点彩膜基板和Micro LED背光源210，Micro LED背光源210如图13中的类似，量子点彩膜基板的结构跟图11相同，此处不再赘述具体的结构。\n\n[0078]如图15所示，本发明实施例提供一种显示装置的第三种结构示意图。显示装置200包括图12中的量子点彩膜基板和Micro LED背光源210，Micro LED背光源210如图12中的类似，量子点彩膜基板的结构跟图12相同，此处不再赘述具体的结构。\n\n[0079]依据上述图13至图15中的显示装置，本发明还提供一种显示装置的制备方法，所述方法包括：\n\n[0080]步骤S10，提供一衬底，在所述衬底上制备上宽下窄的结构的R色阻块、G色阻块和B色阻块，并向所述B色阻块掺杂高折射率散射粒子。\n\n[0081]步骤S20，提供硅基板，在所述硅基板上形成量子点层，将量子点层与所述R色阻块和所述G色阻块接触部分转印至所述R色阻块和所述G色阻块表面，并剥离所述硅基板，完成量子点彩膜基板的制备。\n\n[0082]步骤S30，将上述量子点彩膜基板与对应的Micro LED背光源对位设置，得到R/G/B的显示装置。\n\n[0083]优选地，步骤S10具体包括：在所述B色阻中添加二氧化钛、氧化锆或钛酸钡或二氧化钛中的一种晶体材料或一种以上晶体材料，晶体材料占所述B色阻的质量分数为0.5～8％，晶体材料的尺寸设置50nm至2000nm；并对所述B色阻表面做亲水处理，便于后续步骤S20中的量子点层选择性地转印在R色阻块和G色阻块上，不转印到所述B色阻上。\n\n[0084]优选地，步骤S20还包括：在所述量子点彩膜基板的外围制备阻隔层，所述阻隔层的材料为氧化硅和氮化硅中一种材料或两种组合材料，膜厚设置1nm至50nm。所述阻隔层对应所述R色阻块和G色阻块位置上制备金属层，所述金属层为纳米银、纳米银和二氧化硅复合材料、纳米银和二氧化钛复合材料中的一种材料或两种以上组合材料，膜厚为1nm至50nm。\n\n[0085]如图16所示，本发明实施例提供一种显示装置的制备流程结构示意图。如图16中的(13a)至(13c)所示，提供Si基板，Si基板表面洁净化处理后，将ODTS涂布于Si基板表面成膜302，ODTS为十八烷基三氯硅及其衍生物，在ODTS膜层302上旋转涂布分散于正己烷溶液红绿量子点，形成量子点层303，膜厚为5um至20um。\n\n[0086]如图16中的(13d)至(13e)所示，PDMS基板上进行黄光制程图案化，形成R/G/B光刻胶层，光刻胶层界面与量子点层303接触，将量子点层303与R/G色阻块接触部分转印至R/G色阻块表面，加热50至100℃，保持时间为10min至60min，然后冷却至室温，快速将柔性基板PDMS从Si基板上剥离，完成量子点彩膜基板的制备。其中三个膜层界面剥离力：ODETS膜层302[0087]如图16中的(13f)所示，将上述量子点彩膜基板与对应的Micro LED背光源对位设置，得到图13中的R/G/B的显示装置，其中，Micro LED背光源包括驱动电路板201和位于驱动电路板上的微型红色发光器件202、微型绿色发光器件203和微型蓝色发光器件204，相邻的两个微型发光器件之间设置有隔离墙。\n\n[0088]特别说明一下，其他的结构显示装置的结构跟图13类似，阻隔层和金属层一般采用蒸镀或涂布工艺，完成转印制程后在量子层表面低温蒸镀氮化硅或氧化硅层，膜厚为1nm至50nm，形成阻隔层，提升阻隔水氧性。在外侧常温溅射Ag金属层，膜厚1～50nm，形成金属层、为了提升量子点光转化效率，可在溅射完成金属层后在，选择性刻蚀掉B色阻块表面金属层，提升B色阻穿透率。\n\n[0089]另外向B色阻块中添加0.5～8wt％二氧化钛、氧化锆或钛酸钡或二氧化钛等尺寸50nm至2000nm的高折射率纳米材料，在蓝光光阻表面做亲水处理，再完成量子点层转印制程，可将量子点层选择性的转印在R色阻块和G色阻块表面，提高蓝光色阻透过率并扩散蓝光，降低R色阻块、G色阻块和B色阻块出射光亮度视角差异。其余的制备方法此处不再赘述。\n\n[0090]在图10至图16中，本发明在量子点块转印至R色阻块121和G色阻块122，B色阻块113下方未设置量子点块，B色阻块添加有高折射率散射粒子，红光和绿光经过量子块和色阻块出射纯净的红光和绿光，蓝光经过高折射率散射粒子的折射后，同样出射纯净的蓝光，避免R/G/B三色光视角和色域的差异，从而提升量子点彩膜基板出射光线的品质。\n\n[0091]如图17所示，本发明提供一种R色阻块、G色阻块和B色阻块的结构示意图。图17中的(a)中的R色阻块、G色阻块和B色阻块为方形凸台，按照R色阻块、G色阻块和B色阻块顺序依次排列，形成两排。图17中的(b)R色阻块、G色阻块和B色阻块为为圆形凸台，按照R色阻块、G色阻块和B色阻块顺序依次排列，形成两排。\n\n[0092]图18至图20为本发明提供一种量子点块结构示意图，在图18至图20中，量子点块一次同时转印至R色阻块、G色阻块和B色阻块，或一次同时转印至R色阻块和G色阻块，依据具体的量子点彩膜基板结构不同而不同，但是转印的过程和方法类似。\n\n[0093]如图18所示，量子点块为方形凸台，图18中的(c)采用上下两排进行转印，然后图18中的(d)进行下一列的两排进行转印，整个转印的图形呈方形阵列结构，一次转印两排量子点块。\n\n[0094]如图19至20所示，量子点块为圆形凸台，图19中的(c)第一转印过程中采用上下两排进行转印，然后图19中的(d)第二次转印过程中进行下一列的两排进行转印，整个转印的图形呈阵列结构。图20中的(c)第一转印过程中采用上下两排进行转印，然后图20中的(d)第二次转印过程中进行下一列的两排进行转印，整个转印的图形呈平行四边形阵列结构。进一步提升转印利用率，若量子点块的圆形截面直径D，第二次转印位置与第一次转印位置相比水平移动D/2，垂直移动0.9D。\n\n[0095]综上，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10959, 24013, '【技术领域】\n\n[0001]本发明涉及液晶显示技术领域，具体涉及一种柔性显示装置。\n\n【背景技术】\n\n[0002]随着科学技术蓬勃的发展，柔性显示器逐渐实现了量产化、产品化。有机电致发光显示器(Organic Light-Emitting Diode，OLED)具有更加轻薄(厚度小于500nm)、自发光、响应时间短、可视角度大、色彩逼真、清晰度高和能耗低等优点，且其自身为平面器件结构，容易与塑料基板兼容，制备时采用低温工艺，能够很好的实现柔性显示，逐渐成为柔性显示器的首选。\n\n[0003]然而，现有的柔性显示器产品的整机滑动结构无法精准的局部定位，导致无法确定滑动的距离、局部褶皱和与整机结合浮起，从而影响柔性显示器的外观效果。\n\n[0004]因此，现有技术存在缺陷，有待改进与发展。\n\n【发明内容】\n\n[0005]本发明提供一种柔性显示装置，能有效地改善柔性显示装置无法精准的局部定位的问题，从而提高柔性显示装置的外观效果。\n\n[0006]为了解决上述问题，本发明提供了一种柔性显示装置，包括：柔性显示面板，柔性显示面板具有显示屏和底部；耐弯折结构，耐弯折结构贴合在底部，耐弯折结构上设有制备成凹凸形状的咬合结构。\n\n[0007]其中，柔性显示装置还包括至少一个卷轴，耐弯折结构的至少一侧缠绕在卷轴上，卷轴上设有与咬合结构相匹配的滑动结构，以使柔性显示面板相对卷轴滑动。\n\n[0008]其中，底部包括显示区和弯折区，耐弯折结构位于弯折区。\n\n[0009]其中，耐弯折结构还位于显示区，位于显示区的耐弯折结构上还设有多个穿孔结构，卷轴上设有与穿孔结构相匹配的定位结构，通过定位结构，以使卷轴的一侧固定。\n\n[0010]其中，位于弯折区的耐弯折结构位于显示区的外侧的某一侧或多侧。\n\n[0011]其中，咬合结构包括凸起和凹槽，凸起的截面形状包括三角形、圆弧形或梯形的任一种。\n\n[0012]其中，耐弯折结构的材料包括耐弯折金属或耐弯折包塑线胶。\n\n[0013]其中，耐弯折结构通过光学胶或压敏胶贴合在底部。\n\n[0014]其中，咬合结构通过注塑成型、激光刻蚀或药水刻蚀中的任一种或多种方式形成。\n\n[0015]其中，柔性显示面板包括有机电致发光显示面板、液晶显示面板、Micro LED或Mini LED中的任一种，柔性显示面板还包括衬底，其中，衬底包括柔性衬底。\n\n[0016]本发明的有益效果是：区别于现有技术，本发明提供了一种柔性显示装置，包括：柔性显示面板，柔性显示面板具有显示屏和底部；耐弯折结构，耐弯折结构贴合在底部，耐弯折结构上设有制备成凹凸形状的咬合结构，通过在耐弯折结构上设有制备成凹凸形状的咬合结构，以改善柔性显示装置无法精准的局部定位的问题，从而提高柔性显示装置的外观效果。\n\n【附图说明】\n\n[0017]图1为本发明实施例提供的一种柔性显示装置展开的结构示意图；\n\n[0018]图2为本发明实施例提供的一种耐弯折结构的结构示意图；\n\n[0019]图3为本发明实施例提供的柔性显示装置收卷的结构示意图；\n\n[0020]图4为本发明实施例提供的另一种柔性显示装置展开的结构示意图；\n\n[0021]图5为本发明实施例提供的另一种耐弯折结构的结构示意图；\n\n[0022]图6为图2中的耐弯折结构沿截面C-C的剖视结构示意图。\n\n【具体实施方式】\n\n[0023]下面结合附图和实施例，对本发明作进一步的详细描述。特别指出的是，以下实施例仅用于说明本发明，但不对本发明的范围进行限定。同样地，以下实施例仅为本发明的部分实施例而非全部实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0024]另外，本发明所提到的术语第一、第二、第三等可以在此用来描述各种元素，但这些元素不应该受限于这些术语。这些术语仅用来将这些元素彼此区分开。例如，在不脱离本申请范围的前提下，第一种可以被称为第二种，并且类似地，第二种可以被称为第一种。因此，使用的术语是用以说明及理解本发明，而非用以限制本发明。在各个附图中，结构相似的单元采用相同的附图标记来表示。为了清楚起见，附图中的各个部分没有按比例绘制。此外，附图中可能未示出某些公知的部分。\n\n[0025]为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图，对本申请实施例进行进一步详细说明。\n\n[0026]如图1所示，本发明提供了一种柔性显示装置100，包括：柔性显示面板110，柔性显示面板110具有显示屏120和底部130；耐弯折结构140，耐弯折结构140贴合在底部130，耐弯折结构140上设有制备成凹凸形状的咬合结构141。\n\n[0027]具体地，如图1和图2所示，分别为本发明实施例提供的一种柔性显示装置100展开的结构示意图以及对应的耐弯折结构的结构示意图，柔性显示装置100包括：柔性显示面板110，柔性显示面板110具有显示屏120和底部130，柔性显示面板110是指，由柔软的材料制成，可变形可弯曲的显示面板，一般情况下，柔性显示面板110包括可以实现图像显示的显示屏120和不具有显示功能的底部130。通过将耐弯折结构140贴合在柔性显示面板110的底部130，且在耐弯折结构140上设有制备成凹凸形状的咬合结构141，由于凹凸形状的咬合结构141在弯折的情况下能够实现精准的局部定位，以解决柔性显示装置100无法精准的局部定位的问题，从而提高柔性显示装置100的外观效果。\n\n[0028]此外，需要说明的是，如图1所示的柔性显示装置100的方案只是本发明的一种实施例，此时，在耐弯折结构140上设有一组咬合结构141，通过该组咬合结构141在滑动过程中实现精准的局部定位。\n\n[0029]其中，柔性显示装置100还包括至少一个卷轴150，耐弯折结构140的至少一侧缠绕在卷轴150上，卷轴150上设有与咬合结构141相匹配的滑动结构，以使柔性显示面板110相对卷轴150滑动。\n\n[0030]具体地，为了使柔性显示装置100的整体体积更小，更加方便携带，通常在不使用时，对柔性显示面板110进行收卷，比如，采用卷轴150对柔性显示面板110进行收卷，如图3所示，柔性显示装置100至少还包括一个卷轴150，耐弯折结构140的至少一侧缠绕在卷轴150上，卷轴150上设有与咬合结构141相匹配的滑动结构，通过贴合在柔性显示面板110底部130的凹凸形状的咬合结构141与卷轴150的滑动结构相互配合，以使柔性显示面板110相对卷轴150滑动，从而改变柔性显示面板110的显示面积，并实现柔性显示面板110精准的局部定位以及确定滑动距离。比如，通过控制咬合结构141与卷轴150的滑动结构的相对滑动，确定滑动的距离，可以实现柔性显示面板110的显示面积的可控。\n\n[0031]此外，卷轴150可以是一个实心的轴，而实心轴有利于更好地对缠绕在卷轴150上的柔性显示面板110起支撑作用，此时，柔性显示面板110的一部分紧贴缠绕在卷轴150上，而位于卷轴150下方且没有紧贴缠绕在卷轴150上的末端部分被柔性显示面板110的显示屏120所遮挡，以使柔性显示装置100的整体体积更小，更加方便携带。另外，在满足一定的强度的条件下，卷轴150也可以是一个空心的轴，通过对卷轴150进行空心处理从而减轻了柔性显示装置100的整体重量，在对卷轴150上的柔性显示面板110起支撑作用的同时，还可以在卷轴150的中空部分设置一些光学组件，比如，具有望远镜或放大镜功能的镜片等，从而实现柔性显示装置100功能的多元化，使柔性显示装置100适用于不同的应用场景。\n\n[0032]另外，卷轴150的材质可以是耐弯折金属或耐弯折包塑线胶，比如SUS304、SUS201或是聚氯乙烯(Polyvinyl chloride，PVC)等，也可以是其它材质，具体不作限制。\n\n[0033]其中，底部130包括显示区和弯折区，耐弯折结构140位于弯折区。\n\n[0034]如图1所示，柔性显示面板110的底部130包括显示区(如图1所示的A1区域)和弯折区(如图1所示的A2区域)，当弯折区全部收卷在卷轴150上时，此时，柔性显示装置100的显示面积最小，为显示区对应的面积，即如图1所示的A1区域，对应地，此时的柔性显示装置100的整体体积最小，方便携带；而当弯折区全部展开时，此时，柔性显示装置100的显示面积最大，为显示区和弯折区对应的面积，即如图1所示的A1区域和A2区域的面积之和，对应地，此时的柔性显示装置100的显示面积最大，以方便用户使用。通过将带有凹凸形状的咬合结构141的耐弯折结构140贴合在底部130的弯折区，以使柔性显示面板110能相对卷轴150滑动，从而实现柔性显示面板110的收卷和展开，进而实现控制显示面积的大小，以满足客户的不同需求。\n\n[0035]此外，需要说明的是，柔性显示面板110的完全展开和完全收卷的状态只是最大显示面积和最小显示面积两个临界的状态，柔性显示面板110的显示面积可以在完全展开和完全收卷之间的任意状态，比如，非完全展开或非完全收卷，即柔性显示面板110的显示面积可以在最大显示面积和最小显示面积之间的任意值。\n\n[0036]其中，耐弯折结构240还位于显示区，且位于显示区的耐弯折结构240上还设有多个穿孔结构，卷轴上设有与穿孔结构相匹配的定位结构，通过定位结构，以使卷轴的一侧固定。\n\n[0037]具体地，如图4和5所示，分别为本发明实施例提供的另一种柔性显示装置200展开的结构示意图以及对应的耐弯折结构240的结构示意图，耐弯折结构240还可以位于显示区(如图4所示的B1区域)，当一部分弯折区(如图4所示的B2区域)对应的柔性显示面板210缠绕在卷轴(未在图中示出)上时，另一部分弯折区对应的柔性显示面板210悬空，悬空部分的柔性显示面板210被显示屏220所遮挡，由于耐弯折结构240还位于显示区，且在耐弯折结构240上设有制备成凹凸形状的咬合结构241，显示区的咬合结构241可以对悬空部分的柔性显示面板210起一定的支撑作用，当卷轴的轴径非常小时，悬空部分对应的咬合结构241可以与显示区对应的咬合结构241相配合，一方面能实现对悬空部分的柔性显示面板210起一定的支撑作用，另一方面能实现柔性显示面板210相对显示区对应的耐弯折结构240的相对滑动。\n\n[0038]如图4和5所示，当耐弯折结构240还位于显示区时，通过将耐弯折结构240贴合在柔性显示面板210底部230的显示区，在位于显示区的耐弯折结构240上设有多个穿孔结构(未在图中示出)，卷轴上设有与穿孔结构相匹配的定位结构(未在图中示出)，在柔性显示面板210相对卷轴滑动的过程中，当柔性显示面板210处于收卷的状态时，即卷轴与柔性显示面板210底部230的弯折区靠近显示区的一侧的边缘与卷轴相接触，由于在显示区对应的耐弯折结构240上设有穿孔结构，当柔性显示面板210继续相对卷轴滑动时，通过穿孔结构和定位结构相配合，以使卷轴的一侧固定，从而对柔性显示面板210起一个限位的作用，即限定柔性显示面板210在完全展开的状态时继续滑动，避免卷轴运动到显示区，导致显示区对应的柔性显示面板210被弯折，从而使显示区对应的柔性显示面板210的像素因为弯折而被破坏，进而影响柔性显示面板210的显示效果。\n\n[0039]其中，位于弯折区的耐弯折结构140位于显示区的外侧的某一侧或多侧。\n\n[0040]具体地，如图1所示，位于弯折区的耐弯折结构140位于显示区外侧的下侧，当位于弯折区的耐弯折结构140位于显示区外侧的某一侧时，比如下侧，对应地，该柔性显示装置100设有一个卷轴150，通过卷轴150与下侧的耐弯折结构140咬合连接，从而实现柔性显示面板110的收卷和展开，进而实现控制显示屏120的显示面积，以满足客户的不同需求。此外，需要说明的是，位于弯折区的耐弯折结构140位于显示区外侧的某一侧即可，具体不作限制。\n\n[0041]不同于如图1所示的位于弯折区的耐弯折结构140位于示区的外侧的某一侧的方案，位于弯折区的耐弯折结构140还可以位于显示区的外侧的四侧中的多侧，比如，如图4所示，位于弯折区的耐弯折结构240位于示区的外侧的上侧和下侧，对应地，该柔性显示装置200设有两个卷轴，通过两个卷轴分部与设置在底部230的上侧和下侧的耐弯折结构240的咬合连接，进一步地扩大柔性显示面板210完全展开的显示面积和缩小弯折收卷的显示面积，以满足客户的不同需求。\n\n[0042]此外，需要说明的是，位于弯折区的耐弯折结构240位于显示区外侧的多侧即可，具体不作限制。其中，当位于弯折区的耐弯折结构240位于显示区的外侧的上侧、下侧、左侧和右侧时，对应地，该柔性显示装置200设有四个卷轴，通过四个卷轴分部与设置在底部230的上侧、下侧、左侧和右侧的耐弯折结构240的咬合连接，更进一步地扩大柔性显示面板210完全展开的显示面积和缩小弯折收卷的显示面积。\n\n[0043]另外，需要说明的是，如图1和如图4所示的耐弯折结构140或耐弯折结构240都是沿竖直方向(即如图1所示的与Y轴方向平行的方向)相对卷轴150(图4对应的卷轴未在图中示出)滑动的，耐弯折结构140或耐弯折结构240还可以沿水平方向(即如图1所示的与X轴方向平行的方向)滑动，也可以沿不同于水平方向或竖直方向的其它方向滑动，通过对耐弯折结构140或耐弯折结构240上的凹凸形状的咬合结构141或咬合结构241进行设计即可，对于滑动的方向具体不作限制。\n\n[0044]其中，咬合结构141包括凸起1411和凹槽1412，凸起1411的截面形状包括三角形、圆弧形或梯形的任一种。\n\n[0045]具体地，在本申请实施例中，选取图1中沿截面C-C进行剖视，具体剖视图结构如图6所示，咬合结构141包括凸起1411和凹槽1412，任意两个相邻的两个凹槽1412之间形成有凸起1411，凸起1411的截面形状(如图6所示的阴影部分的形状)为梯形。需要说明的是，除了如图6所示的凸起1411的截面形状为梯形的方案之外，凸起1411的截面形状还可以是三角形、圆弧形或其它任意形状，只要能实现形成凹凸形状的咬合结构141即可，具体不作限制。\n\n[0046]此外，如图4和5所示，在另一实施例中，柔性显示装置200，包括：柔性显示面板210，柔性显示面板210具有显示屏220和底部230；耐弯折结构240，耐弯折结构240贴合在底部230，耐弯折结构240上设有制备成凹凸形状的咬合结构241。其中，咬合结构241包括凸起2411和凹槽2412，凸起2411的截面形状可以是三角形、圆弧形或梯形的任一种，只要能实现形成凹凸形状的咬合结构241即可，具体不作限制。\n\n[0047]其中，耐弯折结构140的材料包括耐弯折金属或耐弯折包塑线胶。\n\n[0048]具体地，耐弯折结构140的材料可以是任意的能够实现弯折的材料，比如耐弯折金属或耐弯折包塑线胶，具体不作限制。当耐弯折结构140的材料是耐弯折金属时，可以是不锈钢，比如SUS304和SUS201等，不锈钢具有耐空气、蒸汽、水等弱腐蚀介质的腐蚀、耐化学腐蚀介质(酸、碱、盐等化学浸蚀)腐蚀和耐弯折的优点。当耐弯折结构140的材料是耐弯折包塑线胶时，可以是聚氯乙烯(Polyvinyl chloride，PVC)，聚氯乙烯具有质量轻、耐弯折和透明度高等优点。\n\n[0049]其中，耐弯折结构140通过光学胶或压敏胶贴合在底部130。\n\n[0050]具体地，耐弯折结构140可以通过光学胶或压敏胶贴合在柔性显示面板110的底部130，光学胶(Optical Clear Adhesive，OCA)是一种透明的光学胶粘剂，光透过率达到90％以上，胶接强度良好，可在室温或者中温下固化，用于胶结透明光学元件的特种粘胶剂，广泛应用于显示技术领域，而压敏胶(Pressure Sensitive Adhesives，PSA)是一种同时具备着液体的粘性性质和固体的弹性性质的粘弹性体，透明性好。此外，还可以采用其它的贴合方式，只要能实现将耐弯折结构140贴合在柔性显示面板110的底部130即可，具体不作限制。\n\n[0051]其中，咬合结构141通过注塑成型、激光刻蚀或药水刻蚀中的任一种或多种方式形成。\n\n[0052]具体地，咬合结构141可以通过开模注塑、激光打孔或药水刻蚀中的任一种或多种方式形成。其中，注塑成型是一种工业产品生产造型的方法，通常分为橡胶注塑和塑料注塑，通过将热塑性的塑料或橡胶利用成型模具制成各种形状的产品。注塑成型具有精度高、生产效率高和可以用来生产形状非常复杂的产品等优点。其中，激光刻蚀因为可以获得良好的尺寸精度和加工质量，在半导体材料等对加工精度和工艺控制要求较高的领域中应用十分广泛，与此同时，激光刻蚀具有无接触性、柔性化程度高、加工速度快、无噪声、热影响区小、可聚焦到激光波长级的极小光斑等优越特性。其中，药水刻蚀是指，通过化学药水和被刻蚀的物质之间的化学反应将被刻蚀物质剥离下来的刻蚀方法，药水刻蚀适应性强、表面均匀性好、对硅片的损伤少，几乎适用于所有的金属、玻璃和塑料等材料。\n\n[0053]此外，需要说明的是，穿孔结构和定位结构也可以通过上述的开模注塑、激光打孔或湿法刻蚀中的任一种或多种方式形成，也可以通过其它任意的一种或多种方式形成，具体不再赘述。\n\n[0054]其中，柔性显示面板110包括有机电致发光显示面板、液晶显示面板、Micro LED或Mini LED中的任一种，柔性显示面板110还包括衬底，其中，衬底包括柔性衬底。\n\n[0055]具体地，柔性显示面板110可以是有机电致发光显示面板(Organic Light-Emitting Diode，OLED)、液晶显示面板(Liquid Crystal Display，LCD)、Micro LED或MiniLED中的任一种。\n\n[0056]具体地，一般情况下，现有的有机电致发光显示面板的封装膜层结构从下到上包括依次层叠设置的阳极(Anode)、空穴传输层(Hole Transfer Layer，HTL)、发光层(Emitting Layer，EML)、电子传输层(Electron Transfer Layer，ETL)、阴极(Cathode)和封盖层(Capping Layer，CPL)。其中，阳极或者阴极中至少一个需要是透明的，以便使发光层发出的光透过。通常情况下，选取阳极作为透明电极，比如，阳极的材料为氧化铟锡(Indium Tin Oxide，ITO)。有机电致发光显示面板的发光过程包括：当在阳极和阴极施加适当的电压时，电子和空穴克服界面能垒后，分别经由阴极和阳极注入，电子和空穴分别经由电子传输层和空穴传输层迁移到发光层，电子和空穴在发光层内互相复合，形成处于激发态的激子，激子将能量传递给发光层的有机发光分子，并激发有机发光分子的电子从基态跃迁到激发态，激发态的电子释放能量回到稳定的基态，产生辉光放电，从而实现电致发光。当柔性显示面板110是有机电致发光显示面板时，由于柔性显示面板110需要满足可弯折的要求，有机电致发光显示面板的衬底需要是柔性衬底。通过在刚性的承载玻璃基板上涂布一层聚酰亚胺(Polyimide，PI)，然后再在聚酰亚胺层上制作柔性显示器件，由于聚酰亚胺在受到特定波长的激光照射后，粘性会发生较大变化，可以通过激光剥离技术(LaserLift Off，LLO)将柔性显示面板110与承载玻璃基板分离，从而得到可弯折的柔性显示面板110。\n\n[0057]具体地，不同于现有技术中的柔性的有机电致发光显示面板的技术，柔性显示面板110还可以采用液晶显示面板、Micro LED或Mini LED等，当液晶显示面板、Micro LED或Mini LED的衬底是柔性衬底时，可以满足柔性显示面板110可弯折的需求。\n\n[0058]具体地，液晶显示面板(未在图中示出)包括：阵列基板、与阵列基板相对设置的彩膜基板、设置于阵列基板上面向彩膜基板一侧的像素电极、设置于彩膜基板上面向阵列基板一侧的公共电极，以及位于阵列基板和彩膜基板中间的液晶层。液晶显示面板的工作原理为：通过向薄膜晶体管阵列基板的像素电极和彩膜基板的公共电极施加电压，从而控制液晶层液晶分子的偏转，进而将背光模组的光线折射出来产生画面。当液晶显示面板的上下两侧的基板(即阵列基板和彩膜基板)采用柔性衬底时，可以满足柔性显示面板110可弯折的需求。\n\n[0059]具体地，Micro LED或Mini LED是指以自发光的微米量级的LED为发光像素单元，将其组装到驱动面板上形成高密度LED阵列的显示技术。Micro LED或Mini LED是将传统的LED结构进行微小化和矩阵化，并采用CMOS集成电路工艺制成驱动电路，来实现每一个像素点定址控制和单独驱动的显示技术。Micro LED或Mini LED具有独立控制的显示画素，具有独立发光控制、高辉度、低耗电、超高分辨率和超高色彩饱和度等特点，并且由于Micro LED或Mini LED具有自发光的技术特性，还可以实现柔性、透明显示等，而其耗电量仅约为液晶显示面板的10％。\n\n[0060]由上述可知，本发明提供了一种柔性显示装置，包括：柔性显示面板，柔性显示面板具有显示屏和底部；耐弯折结构，耐弯折结构贴合在底部，耐弯折结构上设有制备成凹凸形状的咬合结构，通过在耐弯折结构上设有制备成凹凸形状的咬合结构，以改善柔性显示装置无法精准的局部定位的问题，从而提高柔性显示装置的外观效果。\n\n[0061]以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。', '【技术领域】\n\n[0001]本发明涉及液晶显示技术领域，具体涉及一种柔性显示装置。\n\n【背景技术】\n\n[0002]随着科学技术蓬勃的发展，柔性显示器逐渐实现了量产化、产品化。有机电致发光显示器(Organic Light-Emitting Diode，OLED)具有更加轻薄(厚度小于500nm)、自发光、响应时间短、可视角度大、色彩逼真、清晰度高和能耗低等优点，且其自身为平面器件结构，容易与塑料基板兼容，制备时采用低温工艺，能够很好的实现柔性显示，逐渐成为柔性显示器的首选。\n\n[0003]然而，现有的柔性显示器产品的整机滑动结构无法精准的局部定位，导致无法确定滑动的距离、局部褶皱和与整机结合浮起，从而影响柔性显示器的外观效果。\n\n[0004]因此，现有技术存在缺陷，有待改进与发展。\n\n【发明内容】\n\n[0005]本发明提供一种柔性显示装置，能有效地改善柔性显示装置无法精准的局部定位的问题，从而提高柔性显示装置的外观效果。\n\n[0006]为了解决上述问题，本发明提供了一种柔性显示装置，包括：柔性显示面板，柔性显示面板具有显示屏和底部；耐弯折结构，耐弯折结构贴合在底部，耐弯折结构上设有制备成凹凸形状的咬合结构。\n\n[0007]其中，柔性显示装置还包括至少一个卷轴，耐弯折结构的至少一侧缠绕在卷轴上，卷轴上设有与咬合结构相匹配的滑动结构，以使柔性显示面板相对卷轴滑动。\n\n[0008]其中，底部包括显示区和弯折区，耐弯折结构位于弯折区。\n\n[0009]其中，耐弯折结构还位于显示区，位于显示区的耐弯折结构上还设有多个穿孔结构，卷轴上设有与穿孔结构相匹配的定位结构，通过定位结构，以使卷轴的一侧固定。\n\n[0010]其中，位于弯折区的耐弯折结构位于显示区的外侧的某一侧或多侧。\n\n[0011]其中，咬合结构包括凸起和凹槽，凸起的截面形状包括三角形、圆弧形或梯形的任一种。\n\n[0012]其中，耐弯折结构的材料包括耐弯折金属或耐弯折包塑线胶。\n\n[0013]其中，耐弯折结构通过光学胶或压敏胶贴合在底部。\n\n[0014]其中，咬合结构通过注塑成型、激光刻蚀或药水刻蚀中的任一种或多种方式形成。\n\n[0015]其中，柔性显示面板包括有机电致发光显示面板、液晶显示面板、Micro LED或Mini LED中的任一种，柔性显示面板还包括衬底，其中，衬底包括柔性衬底。\n\n[0016]本发明的有益效果是：区别于现有技术，本发明提供了一种柔性显示装置，包括：柔性显示面板，柔性显示面板具有显示屏和底部；耐弯折结构，耐弯折结构贴合在底部，耐弯折结构上设有制备成凹凸形状的咬合结构，通过在耐弯折结构上设有制备成凹凸形状的咬合结构，以改善柔性显示装置无法精准的局部定位的问题，从而提高柔性显示装置的外观效果。\n\n【附图说明】\n\n[0017]图1为本发明实施例提供的一种柔性显示装置展开的结构示意图；\n\n[0018]图2为本发明实施例提供的一种耐弯折结构的结构示意图；\n\n[0019]图3为本发明实施例提供的柔性显示装置收卷的结构示意图；\n\n[0020]图4为本发明实施例提供的另一种柔性显示装置展开的结构示意图；\n\n[0021]图5为本发明实施例提供的另一种耐弯折结构的结构示意图；\n\n[0022]图6为图2中的耐弯折结构沿截面C-C的剖视结构示意图。\n\n【具体实施方式】\n\n[0023]下面结合附图和实施例，对本发明作进一步的详细描述。特别指出的是，以下实施例仅用于说明本发明，但不对本发明的范围进行限定。同样地，以下实施例仅为本发明的部分实施例而非全部实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0024]另外，本发明所提到的术语第一、第二、第三等可以在此用来描述各种元素，但这些元素不应该受限于这些术语。这些术语仅用来将这些元素彼此区分开。例如，在不脱离本申请范围的前提下，第一种可以被称为第二种，并且类似地，第二种可以被称为第一种。因此，使用的术语是用以说明及理解本发明，而非用以限制本发明。在各个附图中，结构相似的单元采用相同的附图标记来表示。为了清楚起见，附图中的各个部分没有按比例绘制。此外，附图中可能未示出某些公知的部分。\n\n[0025]为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图，对本申请实施例进行进一步详细说明。\n\n[0026]如图1所示，本发明提供了一种柔性显示装置100，包括：柔性显示面板110，柔性显示面板110具有显示屏120和底部130；耐弯折结构140，耐弯折结构140贴合在底部130，耐弯折结构140上设有制备成凹凸形状的咬合结构141。\n\n[0027]具体地，如图1和图2所示，分别为本发明实施例提供的一种柔性显示装置100展开的结构示意图以及对应的耐弯折结构的结构示意图，柔性显示装置100包括：柔性显示面板110，柔性显示面板110具有显示屏120和底部130，柔性显示面板110是指，由柔软的材料制成，可变形可弯曲的显示面板，一般情况下，柔性显示面板110包括可以实现图像显示的显示屏120和不具有显示功能的底部130。通过将耐弯折结构140贴合在柔性显示面板110的底部130，且在耐弯折结构140上设有制备成凹凸形状的咬合结构141，由于凹凸形状的咬合结构141在弯折的情况下能够实现精准的局部定位，以解决柔性显示装置100无法精准的局部定位的问题，从而提高柔性显示装置100的外观效果。\n\n[0028]此外，需要说明的是，如图1所示的柔性显示装置100的方案只是本发明的一种实施例，此时，在耐弯折结构140上设有一组咬合结构141，通过该组咬合结构141在滑动过程中实现精准的局部定位。\n\n[0029]其中，柔性显示装置100还包括至少一个卷轴150，耐弯折结构140的至少一侧缠绕在卷轴150上，卷轴150上设有与咬合结构141相匹配的滑动结构，以使柔性显示面板110相对卷轴150滑动。\n\n[0030]具体地，为了使柔性显示装置100的整体体积更小，更加方便携带，通常在不使用时，对柔性显示面板110进行收卷，比如，采用卷轴150对柔性显示面板110进行收卷，如图3所示，柔性显示装置100至少还包括一个卷轴150，耐弯折结构140的至少一侧缠绕在卷轴150上，卷轴150上设有与咬合结构141相匹配的滑动结构，通过贴合在柔性显示面板110底部130的凹凸形状的咬合结构141与卷轴150的滑动结构相互配合，以使柔性显示面板110相对卷轴150滑动，从而改变柔性显示面板110的显示面积，并实现柔性显示面板110精准的局部定位以及确定滑动距离。比如，通过控制咬合结构141与卷轴150的滑动结构的相对滑动，确定滑动的距离，可以实现柔性显示面板110的显示面积的可控。\n\n[0031]此外，卷轴150可以是一个实心的轴，而实心轴有利于更好地对缠绕在卷轴150上的柔性显示面板110起支撑作用，此时，柔性显示面板110的一部分紧贴缠绕在卷轴150上，而位于卷轴150下方且没有紧贴缠绕在卷轴150上的末端部分被柔性显示面板110的显示屏120所遮挡，以使柔性显示装置100的整体体积更小，更加方便携带。另外，在满足一定的强度的条件下，卷轴150也可以是一个空心的轴，通过对卷轴150进行空心处理从而减轻了柔性显示装置100的整体重量，在对卷轴150上的柔性显示面板110起支撑作用的同时，还可以在卷轴150的中空部分设置一些光学组件，比如，具有望远镜或放大镜功能的镜片等，从而实现柔性显示装置100功能的多元化，使柔性显示装置100适用于不同的应用场景。\n\n[0032]另外，卷轴150的材质可以是耐弯折金属或耐弯折包塑线胶，比如SUS304、SUS201或是聚氯乙烯(Polyvinyl chloride，PVC)等，也可以是其它材质，具体不作限制。\n\n[0033]其中，底部130包括显示区和弯折区，耐弯折结构140位于弯折区。\n\n[0034]如图1所示，柔性显示面板110的底部130包括显示区(如图1所示的A1区域)和弯折区(如图1所示的A2区域)，当弯折区全部收卷在卷轴150上时，此时，柔性显示装置100的显示面积最小，为显示区对应的面积，即如图1所示的A1区域，对应地，此时的柔性显示装置100的整体体积最小，方便携带；而当弯折区全部展开时，此时，柔性显示装置100的显示面积最大，为显示区和弯折区对应的面积，即如图1所示的A1区域和A2区域的面积之和，对应地，此时的柔性显示装置100的显示面积最大，以方便用户使用。通过将带有凹凸形状的咬合结构141的耐弯折结构140贴合在底部130的弯折区，以使柔性显示面板110能相对卷轴150滑动，从而实现柔性显示面板110的收卷和展开，进而实现控制显示面积的大小，以满足客户的不同需求。\n\n[0035]此外，需要说明的是，柔性显示面板110的完全展开和完全收卷的状态只是最大显示面积和最小显示面积两个临界的状态，柔性显示面板110的显示面积可以在完全展开和完全收卷之间的任意状态，比如，非完全展开或非完全收卷，即柔性显示面板110的显示面积可以在最大显示面积和最小显示面积之间的任意值。\n\n[0036]其中，耐弯折结构240还位于显示区，且位于显示区的耐弯折结构240上还设有多个穿孔结构，卷轴上设有与穿孔结构相匹配的定位结构，通过定位结构，以使卷轴的一侧固定。\n\n[0037]具体地，如图4和5所示，分别为本发明实施例提供的另一种柔性显示装置200展开的结构示意图以及对应的耐弯折结构240的结构示意图，耐弯折结构240还可以位于显示区(如图4所示的B1区域)，当一部分弯折区(如图4所示的B2区域)对应的柔性显示面板210缠绕在卷轴(未在图中示出)上时，另一部分弯折区对应的柔性显示面板210悬空，悬空部分的柔性显示面板210被显示屏220所遮挡，由于耐弯折结构240还位于显示区，且在耐弯折结构240上设有制备成凹凸形状的咬合结构241，显示区的咬合结构241可以对悬空部分的柔性显示面板210起一定的支撑作用，当卷轴的轴径非常小时，悬空部分对应的咬合结构241可以与显示区对应的咬合结构241相配合，一方面能实现对悬空部分的柔性显示面板210起一定的支撑作用，另一方面能实现柔性显示面板210相对显示区对应的耐弯折结构240的相对滑动。\n\n[0038]如图4和5所示，当耐弯折结构240还位于显示区时，通过将耐弯折结构240贴合在柔性显示面板210底部230的显示区，在位于显示区的耐弯折结构240上设有多个穿孔结构(未在图中示出)，卷轴上设有与穿孔结构相匹配的定位结构(未在图中示出)，在柔性显示面板210相对卷轴滑动的过程中，当柔性显示面板210处于收卷的状态时，即卷轴与柔性显示面板210底部230的弯折区靠近显示区的一侧的边缘与卷轴相接触，由于在显示区对应的耐弯折结构240上设有穿孔结构，当柔性显示面板210继续相对卷轴滑动时，通过穿孔结构和定位结构相配合，以使卷轴的一侧固定，从而对柔性显示面板210起一个限位的作用，即限定柔性显示面板210在完全展开的状态时继续滑动，避免卷轴运动到显示区，导致显示区对应的柔性显示面板210被弯折，从而使显示区对应的柔性显示面板210的像素因为弯折而被破坏，进而影响柔性显示面板210的显示效果。\n\n[0039]其中，位于弯折区的耐弯折结构140位于显示区的外侧的某一侧或多侧。\n\n[0040]具体地，如图1所示，位于弯折区的耐弯折结构140位于显示区外侧的下侧，当位于弯折区的耐弯折结构140位于显示区外侧的某一侧时，比如下侧，对应地，该柔性显示装置100设有一个卷轴150，通过卷轴150与下侧的耐弯折结构140咬合连接，从而实现柔性显示面板110的收卷和展开，进而实现控制显示屏120的显示面积，以满足客户的不同需求。此外，需要说明的是，位于弯折区的耐弯折结构140位于显示区外侧的某一侧即可，具体不作限制。\n\n[0041]不同于如图1所示的位于弯折区的耐弯折结构140位于示区的外侧的某一侧的方案，位于弯折区的耐弯折结构140还可以位于显示区的外侧的四侧中的多侧，比如，如图4所示，位于弯折区的耐弯折结构240位于示区的外侧的上侧和下侧，对应地，该柔性显示装置200设有两个卷轴，通过两个卷轴分部与设置在底部230的上侧和下侧的耐弯折结构240的咬合连接，进一步地扩大柔性显示面板210完全展开的显示面积和缩小弯折收卷的显示面积，以满足客户的不同需求。\n\n[0042]此外，需要说明的是，位于弯折区的耐弯折结构240位于显示区外侧的多侧即可，具体不作限制。其中，当位于弯折区的耐弯折结构240位于显示区的外侧的上侧、下侧、左侧和右侧时，对应地，该柔性显示装置200设有四个卷轴，通过四个卷轴分部与设置在底部230的上侧、下侧、左侧和右侧的耐弯折结构240的咬合连接，更进一步地扩大柔性显示面板210完全展开的显示面积和缩小弯折收卷的显示面积。\n\n[0043]另外，需要说明的是，如图1和如图4所示的耐弯折结构140或耐弯折结构240都是沿竖直方向(即如图1所示的与Y轴方向平行的方向)相对卷轴150(图4对应的卷轴未在图中示出)滑动的，耐弯折结构140或耐弯折结构240还可以沿水平方向(即如图1所示的与X轴方向平行的方向)滑动，也可以沿不同于水平方向或竖直方向的其它方向滑动，通过对耐弯折结构140或耐弯折结构240上的凹凸形状的咬合结构141或咬合结构241进行设计即可，对于滑动的方向具体不作限制。\n\n[0044]其中，咬合结构141包括凸起1411和凹槽1412，凸起1411的截面形状包括三角形、圆弧形或梯形的任一种。\n\n[0045]具体地，在本申请实施例中，选取图1中沿截面C-C进行剖视，具体剖视图结构如图6所示，咬合结构141包括凸起1411和凹槽1412，任意两个相邻的两个凹槽1412之间形成有凸起1411，凸起1411的截面形状(如图6所示的阴影部分的形状)为梯形。需要说明的是，除了如图6所示的凸起1411的截面形状为梯形的方案之外，凸起1411的截面形状还可以是三角形、圆弧形或其它任意形状，只要能实现形成凹凸形状的咬合结构141即可，具体不作限制。\n\n[0046]此外，如图4和5所示，在另一实施例中，柔性显示装置200，包括：柔性显示面板210，柔性显示面板210具有显示屏220和底部230；耐弯折结构240，耐弯折结构240贴合在底部230，耐弯折结构240上设有制备成凹凸形状的咬合结构241。其中，咬合结构241包括凸起2411和凹槽2412，凸起2411的截面形状可以是三角形、圆弧形或梯形的任一种，只要能实现形成凹凸形状的咬合结构241即可，具体不作限制。\n\n[0047]其中，耐弯折结构140的材料包括耐弯折金属或耐弯折包塑线胶。\n\n[0048]具体地，耐弯折结构140的材料可以是任意的能够实现弯折的材料，比如耐弯折金属或耐弯折包塑线胶，具体不作限制。当耐弯折结构140的材料是耐弯折金属时，可以是不锈钢，比如SUS304和SUS201等，不锈钢具有耐空气、蒸汽、水等弱腐蚀介质的腐蚀、耐化学腐蚀介质(酸、碱、盐等化学浸蚀)腐蚀和耐弯折的优点。当耐弯折结构140的材料是耐弯折包塑线胶时，可以是聚氯乙烯(Polyvinyl chloride，PVC)，聚氯乙烯具有质量轻、耐弯折和透明度高等优点。\n\n[0049]其中，耐弯折结构140通过光学胶或压敏胶贴合在底部130。\n\n[0050]具体地，耐弯折结构140可以通过光学胶或压敏胶贴合在柔性显示面板110的底部130，光学胶(Optical Clear Adhesive，OCA)是一种透明的光学胶粘剂，光透过率达到90％以上，胶接强度良好，可在室温或者中温下固化，用于胶结透明光学元件的特种粘胶剂，广泛应用于显示技术领域，而压敏胶(Pressure Sensitive Adhesives，PSA)是一种同时具备着液体的粘性性质和固体的弹性性质的粘弹性体，透明性好。此外，还可以采用其它的贴合方式，只要能实现将耐弯折结构140贴合在柔性显示面板110的底部130即可，具体不作限制。\n\n[0051]其中，咬合结构141通过注塑成型、激光刻蚀或药水刻蚀中的任一种或多种方式形成。\n\n[0052]具体地，咬合结构141可以通过开模注塑、激光打孔或药水刻蚀中的任一种或多种方式形成。其中，注塑成型是一种工业产品生产造型的方法，通常分为橡胶注塑和塑料注塑，通过将热塑性的塑料或橡胶利用成型模具制成各种形状的产品。注塑成型具有精度高、生产效率高和可以用来生产形状非常复杂的产品等优点。其中，激光刻蚀因为可以获得良好的尺寸精度和加工质量，在半导体材料等对加工精度和工艺控制要求较高的领域中应用十分广泛，与此同时，激光刻蚀具有无接触性、柔性化程度高、加工速度快、无噪声、热影响区小、可聚焦到激光波长级的极小光斑等优越特性。其中，药水刻蚀是指，通过化学药水和被刻蚀的物质之间的化学反应将被刻蚀物质剥离下来的刻蚀方法，药水刻蚀适应性强、表面均匀性好、对硅片的损伤少，几乎适用于所有的金属、玻璃和塑料等材料。\n\n[0053]此外，需要说明的是，穿孔结构和定位结构也可以通过上述的开模注塑、激光打孔或湿法刻蚀中的任一种或多种方式形成，也可以通过其它任意的一种或多种方式形成，具体不再赘述。\n\n[0054]其中，柔性显示面板110包括有机电致发光显示面板、液晶显示面板、Micro LED或Mini LED中的任一种，柔性显示面板110还包括衬底，其中，衬底包括柔性衬底。\n\n[0055]具体地，柔性显示面板110可以是有机电致发光显示面板(Organic Light-Emitting Diode，OLED)、液晶显示面板(Liquid Crystal Display，LCD)、Micro LED或MiniLED中的任一种。\n\n[0056]具体地，一般情况下，现有的有机电致发光显示面板的封装膜层结构从下到上包括依次层叠设置的阳极(Anode)、空穴传输层(Hole Transfer Layer，HTL)、发光层(Emitting Layer，EML)、电子传输层(Electron Transfer Layer，ETL)、阴极(Cathode)和封盖层(Capping Layer，CPL)。其中，阳极或者阴极中至少一个需要是透明的，以便使发光层发出的光透过。通常情况下，选取阳极作为透明电极，比如，阳极的材料为氧化铟锡(Indium Tin Oxide，ITO)。有机电致发光显示面板的发光过程包括：当在阳极和阴极施加适当的电压时，电子和空穴克服界面能垒后，分别经由阴极和阳极注入，电子和空穴分别经由电子传输层和空穴传输层迁移到发光层，电子和空穴在发光层内互相复合，形成处于激发态的激子，激子将能量传递给发光层的有机发光分子，并激发有机发光分子的电子从基态跃迁到激发态，激发态的电子释放能量回到稳定的基态，产生辉光放电，从而实现电致发光。当柔性显示面板110是有机电致发光显示面板时，由于柔性显示面板110需要满足可弯折的要求，有机电致发光显示面板的衬底需要是柔性衬底。通过在刚性的承载玻璃基板上涂布一层聚酰亚胺(Polyimide，PI)，然后再在聚酰亚胺层上制作柔性显示器件，由于聚酰亚胺在受到特定波长的激光照射后，粘性会发生较大变化，可以通过激光剥离技术(LaserLift Off，LLO)将柔性显示面板110与承载玻璃基板分离，从而得到可弯折的柔性显示面板110。\n\n[0057]具体地，不同于现有技术中的柔性的有机电致发光显示面板的技术，柔性显示面板110还可以采用液晶显示面板、Micro LED或Mini LED等，当液晶显示面板、Micro LED或Mini LED的衬底是柔性衬底时，可以满足柔性显示面板110可弯折的需求。\n\n[0058]具体地，液晶显示面板(未在图中示出)包括：阵列基板、与阵列基板相对设置的彩膜基板、设置于阵列基板上面向彩膜基板一侧的像素电极、设置于彩膜基板上面向阵列基板一侧的公共电极，以及位于阵列基板和彩膜基板中间的液晶层。液晶显示面板的工作原理为：通过向薄膜晶体管阵列基板的像素电极和彩膜基板的公共电极施加电压，从而控制液晶层液晶分子的偏转，进而将背光模组的光线折射出来产生画面。当液晶显示面板的上下两侧的基板(即阵列基板和彩膜基板)采用柔性衬底时，可以满足柔性显示面板110可弯折的需求。\n\n[0059]具体地，Micro LED或Mini LED是指以自发光的微米量级的LED为发光像素单元，将其组装到驱动面板上形成高密度LED阵列的显示技术。Micro LED或Mini LED是将传统的LED结构进行微小化和矩阵化，并采用CMOS集成电路工艺制成驱动电路，来实现每一个像素点定址控制和单独驱动的显示技术。Micro LED或Mini LED具有独立控制的显示画素，具有独立发光控制、高辉度、低耗电、超高分辨率和超高色彩饱和度等特点，并且由于Micro LED或Mini LED具有自发光的技术特性，还可以实现柔性、透明显示等，而其耗电量仅约为液晶显示面板的10％。\n\n[0060]由上述可知，本发明提供了一种柔性显示装置，包括：柔性显示面板，柔性显示面板具有显示屏和底部；耐弯折结构，耐弯折结构贴合在底部，耐弯折结构上设有制备成凹凸形状的咬合结构，通过在耐弯折结构上设有制备成凹凸形状的咬合结构，以改善柔性显示装置无法精准的局部定位的问题，从而提高柔性显示装置的外观效果。\n\n[0061]以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。');
INSERT INTO `os_patent_instruction_text` VALUES (10960, 24014, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种拼接显示装置及拼接显示装置的组装方法。\n\n背景技术\n\n[0002]目前，现有的微型发光二极管(MicroLight-Emitting Diode，Micro LED)拼接屏通常是通过将Micro LED玻璃基板贴合在有定位孔的背板上，在展示支撑架上通过定位柱与背板的定位孔相互配合进行组装。\n\n[0003]然而，当将多个Micro LED玻璃基板贴合在背板上时，存在组装公差，当背板固定在定位孔上后，定位孔处也存在机加工公差，且任意相邻定位孔均存在机加工误差。由此，当多个背板组装在展示支架上后，由于公差的累计，会造成相邻Micro LED玻璃基板之间存在不均一且较大的缝隙，从而降低了Micro LED拼接屏的视觉品味。\n\n发明内容\n\n[0004]本申请实施例提供一种拼接显示装置及拼接显示装置的组装方法，以解决现有技术中Micro LED拼接屏的视觉品味降低的技术问题。\n\n[0005]本申请实施例提供一种拼接显示装置，所述拼接显示装置包括：\n\n[0006]背板；\n\n[0007]至少一第一显示模组，所述第一显示模组设置于所述背板上，所述第一显示模组具有第一拼接面；以及\n\n[0008]至少一第二显示模组，所述第二显示模组设置于所述背板上，且与所述第一显示模组拼接设置，所述第二显示模组具有第二拼接面，所述第二拼接面与第一拼接面相对设置；\n\n[0009]其中，所述第一拼接面于所述背板所在平面的正投影与所述第二拼接面于所述背板所在平面的正投影至少部分重叠。\n\n[0010]可选的，在本申请的一些实施例中，所述第一显示模组包括依次设置于所述背板上的第一显示主体和第一基板，所述第一拼接面为所述第一基板的侧面；\n\n[0011]所述第二显示模组包括依次设置于所述背板上的第二显示主体和第二基板，所述第二拼接面为所述第二基板的侧面。\n\n[0012]可选的，在本申请的一些实施例中，所述第一基板靠近所述第一显示主体的一面为第一表面，所述第一拼接面与所述第一表面相连，所述第一拼接面与所述第一表面形成第一倾斜角M，0°[0013]所述第二基板靠近所述第二显示主体的一面为第二表面，所述第二拼接面与所述第二表面相连，所述第二拼接面与所述第二表面形成第二倾斜角N，90°[0014]可选的，在本申请的一些实施例中，M和N之和等于180°。\n\n[0015]可选的，在本申请的一些实施例中，所述第一基板包括依次首尾相连的第一侧面、第二侧面、第三侧面以及第四侧面，所述第一侧面为所述第一拼接面，所述第二侧面、所述第三侧面以及所述第四侧面均与所述第一表面形成所述第一倾斜角M；\n\n[0016]所述第二基板包括依次首尾相连的第五侧面、第六侧面、第七侧面以及第八侧面，所述第五侧面为所述第二拼接面，所述第六侧面、所述第七侧面以及所述第八侧面均与所述第二表面形成所述第二倾斜角N。\n\n[0017]可选的，在本申请的一些实施例中，所述第一拼接面为凹面，所述凹面向远离所述第二显示模组的方向凹陷设置，所述第二拼接面为凸面，所述凸面向靠近所述第一显示模组的方向凸出设置，所述凹面和所述凸面相匹配。\n\n[0018]可选的，在本申请的一些实施例中，所述第一显示主体包括依次设置于所述背板上的第三基板和第一发光主体，所述第一发光主体位于所述第一基板和所述第三基板之间，所述第一拼接面于所述背板所在平面的正投影位于所述第三基板于所述背板所在平面的正投影的外侧；\n\n[0019]所述第二显示主体包括依次设置于所述背板上的第四基板和第二发光主体，所述第二发光主体位于所述第二基板和所述第四基板之间，所述第二拼接面于所述背板所在平面的正投影位于所述第四基板于所述背板所在平面的正投影的外侧。\n\n[0020]可选的，在本申请的一些实施例中，所述拼接显示装置包括一支撑基板和设置于所述支撑基板上的至少两个拼接显示单元，每一所述拼接显示单元包括所述背板、至少一所述第一显示模组以及至少一所述第二显示模组。\n\n[0021]本申请实施例还提供一种拼接显示装置的组装方法，其包括以下步骤：\n\n[0022]提供一背板、至少一第一显示模组以及至少两个第二显示模组，所述第一显示模组具有至少相邻的两个第一拼接面，所述第二显示模组具有至少一第二拼接面；\n\n[0023]将所述第一显示模组和所述第二显示模组转移至所述背板上，每一所述第二显示模组的所述第二拼接面与对应的所述第一拼接面相对设置，所述第一拼接面于所述背板所在平面的正投影与所述第二拼接面于所述背板所在平面的正投影至少部分重叠。\n\n[0024]可选的，在本申请的一些实施例中，所述第一显示模组包括依次设置的第一显示主体和第一基板，所述第一基板的至少相邻两个侧面均为所述第一拼接面，所述第一基板靠近所述第一显示主体的一面为第一表面，所述第一拼接面与所述第一表面相连，所述第一拼接面与所述第一表面形成第一倾斜角M，0°[0025]采用第一吸附装置将所述第一显示模组转移至所述背板上；\n\n[0026]采用第二吸附装置将所述第二显示模组转移至所述背板上，以使所述第二拼接面与对应的所述第一拼接面贴合。\n\n[0027]相较于现有技术中的拼接显示装置，在本申请提供的拼接显示装置中，第一显示模组具有第一拼接面，第二显示模组具有第二拼接面，第二拼接面和第一拼接面相对设置，本申请通过使第一拼接面于背板所在平面的正投影与第二拼接面于背板所在平面的正投影至少部分重叠，减小了第一拼接面和第二拼接面之间的缝隙，从而可以减小第一显示模组和第二显示模组之间的缝隙，以提高拼接显示装置的视觉品味。\n\n附图说明\n\n[0028]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0029]图1是本申请第一实施例提供的拼接显示装置的结构示意图。\n\n[0030]图2是本申请第二实施例提供的拼接显示装置的结构示意图。\n\n[0031]图3是本申请第二实施例提供的拼接显示装置中的第一显示模组的俯视示意图。\n\n[0032]图4是本申请第二实施例提供的拼接显示装置中的第二显示模组的俯视示意图。\n\n[0033]图5是本申请第三实施例提供的拼接显示装置的结构示意图。\n\n[0034]图6是本申请第四实施例提供的拼接显示装置的结构示意图。\n\n[0035]图7是本申请提供的拼接显示装置的组装方法的流程示意图。\n\n[0036]图8(a)至8(d)是本申请提供的拼接显示装置的组装方法中各阶段得到的结构示意图。\n\n[0037]图9(a)至9(c)是本申请提供的拼接显示装置中第一显示模组显示异常时的更换方法的流程结构示意图。\n\n[0038]图10(a)至10(c)是本申请提供的拼接显示装置中第二显示模组显示异常时的更换方法的流程结构示意图。\n\n具体实施方式\n\n[0039]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0040]本申请实施例提供一种拼接显示装置及拼接显示装置的组装方法。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0041]本申请提供一种拼接显示装置，所述拼接显示装置包括背板、至少一第一显示模组以及至少一第二显示模组。所述第一显示模组设置于所述背板上。所述第一显示模组具有第一拼接面。所述第二显示模组设置于所述背板上，且与所述第一显示模组拼接设置。所述第二显示模组具有第二拼接面，所述第二拼接面与第一拼接面相对设置。所述第一拼接面于所述背板所在平面的正投影与所述第二拼接面于所述背板所在平面的正投影至少部分重叠。\n\n[0042]由此，在本申请提供的拼接显示装置中，通过使第一拼接面于背板所在平面的正投影与第二拼接面于背板所在平面的正投影至少部分重叠，减小了第一拼接面和第二拼接面之间的缝隙，从而可以减小第一显示模组和第二显示模组之间的缝隙，以提高拼接显示装置的视觉品味。\n\n[0043]请参照图1，本申请第一实施例提供一种拼接显示装置100。拼接显示装置100包括背板100a、至少一第一显示模组10以及至少一第二显示模组20。第一显示模组10设置于背板100a上。第一显示模组10具有第一拼接面10a。第二显示模组20设置于背板100a上。第二显示模组20与第一显示模组10拼接设置。第二显示模组20具有第二拼接面20a。第二拼接面20a与第一拼接面10a相对设置。第一拼接面10a于背板100a所在平面的正投影与第二拼接面20a于背板100a所在平面的正投影至少部分重叠。\n\n[0044]需要说明的是，本申请中第一显示模组10和第二显示模组20的数量可以根据实际情况进行设定，本实施例仅示意出第一显示模组10和第二显示模组20的数量均为一个时的结构，但并不限于此。\n\n[0045]具体的，背板100a用于支撑第一显示模组10和第二显示模组20。其中，背板100a可以为刚性背板，也可以为柔性背板，背板100a的具体材质可以参照现有技术，本申请对此不作限定。\n\n[0046]需要说明的是，在本申请中，第一显示模组10及第二显示模组20靠近背板100a的一侧均可以单独对应设置一支撑背板(图中未示出)，所述支撑背板用于支撑第一显示模组10和第二显示模组20，并避免第一显示模组10和第二显示模组20在组装过程中发生磨损。\n\n[0047]第一显示模组10包括依次设置于背板100a上的第一显示主体11和第一基板12。第一显示主体11可以为Micro LED灯板，也可以为次毫米级发光二极管(MiniLight-EmittingDiode，Mini LED)灯板，本申请以下各实施例仅以第一显示主体11为Micro LED灯板为例进行说明，但并不限于此。\n\n[0048]第一显示主体11包括依次设置于背板100a上的第三基板111和第一发光主体112。第一发光主体112位于第一基板12和第三基板111之间。其中，第三基板111为驱动基板，用于驱动第一发光主体112发光。第三基板111可以为玻璃基的驱动基板。第一发光主体112为Micro LED显示层，Micro LED显示层的具体结构可以参照现有技术，在此不再赘述。\n\n[0049]第一基板12可以为封装基板。所述封装基板可以为玻璃基板，也可以为PCB基板。在本实施例中，第一基板12为玻璃基板。由于玻璃基板具有良好的平整度，因此，使用玻璃基板为封装基板时，能够提高拼接显示装置100的显示效果。\n\n[0050]在本实施例中，第一拼接面10a为第一基板12的侧面。第一基板12靠近第一显示主体11的一面为第一表面12a。第一拼接面10a与第一表面12a相连。第一拼接面10a与第一表面12a形成第一倾斜角M。0°[0051]第二显示模组20包括依次设置于背板100a上的第二显示主体21和第二基板22。第二显示主体21可以为Micro LED灯板，也可以为Mini LED灯板，本申请以下各实施例仅以第二显示主体21为Micro LED灯板为例进行说明，但并不限于此。\n\n[0052]第二显示主体21包括依次设置于背板100a上的第四基板211和第二发光主体212。第二发光主体212位于第二基板22和第四基板211之间。其中，第四基板211为驱动基板，用于驱动第二发光主体212发光。第四基板211可以为玻璃基的驱动基板。第二发光主体212为Micro LED显示层，Micro LED显示层的具体结构可以参照现有技术，在此不再赘述。\n\n[0053]第二基板22可以为封装基板。所述封装基板可以为玻璃基板，也可以为PCB基板。在本实施例中，第二基板22为玻璃基板。由于玻璃基板具有良好的平整度，因此，使用玻璃基板为封装基板时，能够提高拼接显示装置100的显示效果。\n\n[0054]在本实施例中，第二拼接面20a为第二基板22的侧面。第二基板22靠近第二显示主体21的一面为第二表面22a。第二拼接面20a与第二表面22a相连。第二拼接面20a与第二表面22a形成第二倾斜角N。90°[0055]在本实施例中，M和N之和等于180°。上述设置能够使得第一拼接面10a和第二拼接面20a在拼接后完全贴合，进而可以避免第一显示模组10和第二显示模组20之间产生缝隙，从而能够提高拼接显示装置100的视觉品味。需要说明的是，在一些实施例中，M和N之和还可以小于180°，在此不再赘述。\n\n[0056]进一步的，第一拼接面10a于背板100a所在平面的正投影位于第三基板111于背板100a所在平面的正投影的外侧。第二拼接面20a于背板100a所在平面的正投影位于第四基板211于背板100a所在平面的正投影的外侧。其中，第一显示主体11和第二显示主体21之间具有拼接缝(图中未标识)，第一拼接面10a和第二拼接面20a于背板100a所在平面的正投影均位于所述拼接缝于背板100a所在平面的正投影内。\n\n[0057]在上述设置中，第一基板12的尺寸大于第三基板111的尺寸，第二基板22的尺寸大于第四基板211的尺寸，进而能够使第一显示主体11和第二显示主体21之间的拼缝最小化，从而可以进一步提高拼接显示装置100的显示效果。\n\n[0058]需要说明的是，在本实施例中，拼接显示装置100还可以包括与背板100a固定的支撑架(图中未示出)，支撑架的具体结构可以参照现有技术，在此不再赘述。\n\n[0059]请参照图2至图4，本申请第二实施例提供一种拼接显示装置100。本申请第二实施例提供的拼接显示装置100与第一实施例的不同之处在于：第一基板12包括依次首尾相连的第一侧面121、第二侧面122、第三侧面123以及第四侧面124。第一侧面121为第一拼接面10a。第二侧面122、第三侧面123以及第四侧面124均与第一表面12a形成第一倾斜角M。第二基板22包括依次首尾相连的第五侧面221、第六侧面222、第七侧面223以及第八侧面224。第五侧面221为第二拼接面20a。第六侧面222、第七侧面223以及第八侧面224均与第二表面22a形成第二倾斜角N。\n\n[0060]当第一显示模组10及第二显示模组20的数量均为两个及以上时，本实施例通过使第一基板12的四个侧面与第一表面12a均形成第一倾斜角M，且第二基板22的四个侧面与第二表面22a之间均形成第二倾斜角N，可以满足多个显示模组的拼接需求。\n\n[0061]请参照图5，本申请第三实施例提供一种拼接显示装置100。本申请第三实施例提供的拼接显示装置100与第二实施例的不同之处在于：第一拼接面10a为凹面。凹面向远离第二显示模组20的方向凹陷设置。第二拼接面20a为凸面。凸面向靠近第一显示模组10的方向凸出设置。凹面和凸面相匹配。\n\n[0062]在本实施例中，凹面和凸面贴合设置，由此可以避免第一显示模组10和第二显示模组20之间产生缝隙。在一些实施例中，由于拼接公差的产生，凹面和凸面之间也可以具有一定间隙，只要满足凹面和凸面在背板100a所在平面的正投影有重叠，均在本申请的保护范围内。\n\n[0063]本实施例通过将第一拼接面10a设置为凹面，第二拼接面20a设置为与凹面相匹配的凸面，由于凹面和凸面贴合设置，因此，可以避免第一显示模组10和第二显示模组20之间产生缝隙，从而能够提高拼接显示装置100的视觉品味。\n\n[0064]请参照图6，本申请第四实施例提供一种拼接显示装置100。本申请第四实施例提供的拼接显示装置100与第二实施例的不同之处在于：拼接显示装置100包括一支撑基板100A和设置于支撑基板100A上的至少两个拼接显示单元101。每一拼接显示单元101包括背板100a、至少一第一显示模组10以及至少一第二显示模组20。\n\n[0065]本申请的发明人在实验探究中发现，当一个显示模组对应一个背板时，由于多个背板与拼接显示装置用的支撑基板之间均存在组装公差，因此，当将多个设置有背板的显示模组组装至支撑基板上时，由于多个背板之间组装公差的存在，在组装之后的拼接显示装置中，多个相邻显示模组之间均会存在明显的缝隙，从而不利于提高拼接显示装置的视觉品味。\n\n[0066]在本实施例中，通过使第一显示模组10和第二显示模组20共用一个背板100a，当需要拼接多个显示模组时，在第一显示模组10和第二显示模组20的数量一定时，可以减少背板100a的使用数量，从而能够降低因背板100a数量较多而造成的组装公差，进而能够大大提高拼接显示装置100的视觉品味。\n\n[0067]需要说明的是，在本实施例中，拼接显示装置100中的拼接显示单元101的数量可以根据实际应用需求进行设定，本实施例仅示意出了拼接显示单元101的数量为两个时的结构，但并不能理解为对本申请的限制。另外，在每一拼接显示单元101中，第一显示模组10和第二显示模组20的数量也可以根据所需拼接显示装置100的尺寸进行设定，本申请对此不作限定。\n\n[0068]请参照图7，本申请实施例还提供一种拼接显示装置的组装方法，所述拼接显示装置的组装方法包括以下步骤：\n\n[0069]B1：提供一背板、至少一第一显示模组以及至少两个第二显示模组，所述第一显示模组具有至少相邻的两个第一拼接面，所述第二显示模组具有至少一第二拼接面；\n\n[0070]B2：将所述第一显示模组和所述第二显示模组转移至所述背板上，每一所述第二显示模组的所述第二拼接面与对应的所述第一拼接面相对设置，所述第一拼接面于所述背板所在平面的正投影与所述第二拼接面于所述背板所在平面的正投影至少部分重叠。\n\n[0071]在本实施例提供的拼接显示装置的组装方法中，将第一显示模组和第二显示模组转移至背板上之后，由于第一拼接面于背板所在平面的正投影与第二拼接面于背板所在平面的正投影至少部分重叠，因此，组装之后的第一拼接面和第二拼接面之间的缝隙可以减小，也即，第一显示模组和相邻的第二显示模组之间的拼缝可以减小，从而能够提高拼接显示装置的视觉品味。\n\n[0072]需要说明的是，本实施例仅示意出第一显示模组的数量为一个、第二显示模组的数量为两个时的结构，但并不限于此。其中，第一拼接面的数量和第二拼接面的数量可以根据第一显示模组和第二显示模组的拼接需求进行设定，只要保证第一显示模组的拼接侧设有第一拼接面且第二显示模组的拼接侧设有第二拼接面，均在本申请的保护范围内。\n\n[0073]下面对本实施例提供的拼接显示装置的组装方法进行详细的阐述。\n\n[0074]B1：提供一背板100a、一第一显示模组10以及两个第二显示模组20，第一显示模组10具有至少相邻的两个第一拼接面10a，第二显示模组20具有至少一第二拼接面20a，如图8(a)所示。\n\n[0075]其中，在步骤B1之前，还包括：对第一基板12的侧面进行磨边处理，以对应形成第一拼接面10a，以及对第二基板22的侧面进行磨边处理，以对应形成第二拼接面20a。\n\n[0076]在本实施例中，第一显示模组10包括依次设置的第一显示主体11和第一基板12。第一显示主体11包括依次设置的第三基板111和第一发光主体112。第一发光主体112位于第一基板12和第三基板111之间。第一基板12的至少相邻两个侧面均为第一拼接面10a。第一基板12靠近第一显示主体11的一面为第一表面12a。第一拼接面10a与第一表面12a相连。第一拼接面10a与第一表面12a形成第一倾斜角M。0°[0077]第二显示模组20包括依次设置的第二显示主体21和第二基板22。第二显示主体21包括依次设置的第四基板211和第二发光主体212。第二发光主体212位于第二基板22和第四基板211之间。第二基板22的至少一个侧面为第二拼接面20a。第二基板22靠近第二显示主体21的一面为第二表面22a。第二拼接面20a与第二表面22a相连。第二拼接面20a与第二表面22a形成第二倾斜角N。90°[0078]在本实施例中，M和N之和等于180°。在一些实施例中，M和N之和也可以小于180°，在此不再赘述。\n\n[0079]B2：将第一显示模组10和第二显示模组20转移至背板100a上，每一第二显示模组20的第二拼接面20a与对应的第一拼接面10a相对设置，第一拼接面10a于背板100a所在平面的正投影与第二拼接面20a于背板100a所在平面的正投影至少部分重叠。\n\n[0080]其中，步骤B2具体包括以下步骤：\n\n[0081]B21：采用第一吸附装置30将第一显示模组10转移至背板100a上，如图8(b)所示。\n\n[0082]其中，第一吸附装置30包括第一吸盘301和连接于第一吸盘301的第一吸管302。\n\n[0083]B22：采用第二吸附装置40将第二显示模组20转移至背板100a上，以使第二拼接面20a与对应的第一拼接面10a贴合，如图8(c)和图8(d)所示。\n\n[0084]其中，第二吸附装置40包括第二吸盘401和连接于第二吸盘401的第二吸管402。\n\n[0085]在本实施例中，在采用第二吸附装置40将第二显示模组20转移至背板100a上的过程中，可以沿垂直于背板100a的方向使第二显示模组20逐渐靠近第一显示模组10，并与第一显示模组10贴合。\n\n[0086]由于第一显示模组10的第一拼接面10a与第一表面12a之间的第一倾斜角M为锐角，第二显示模组20的第二拼接面20a与第二表面22a之间的第二倾斜角N为钝角，M和N之和为180°，当沿垂直于背板100a的方向转移第二显示模组20时，在第一拼接面10a和第二拼接面20a贴合之前，第一显示模组10和第二显示模组20之间不会因接触而产生磨损。另外，由于第一显示模组10中的第一基板12和第三基板111以及第二显示模组20中的第二基板22和第四基板211均为玻璃材质，因此，上述设置可以降低第一显示模组10和第二显示模组20组装过程中拼接侧的破碎几率，从而能够提高拼接显示装置100的产品良率。\n\n[0087]对于拼接显示屏来说，当拼接显示屏中的显示模组发生显示异常时，通常需要将显示异常的显示模组从拼接显示屏中取下，并更换为新的显示模组。在现有的拼接显示屏中，显示模组通过背板连接至支撑架上，并通过螺丝来实现背板和支撑架的位置调节，以调节相邻显示模组之间的缝隙。\n\n[0088]本申请的发明人在实验探究中发现，当任意相邻的显示模组之间的缝隙过小时，若显示模组出现显示异常而需要更换时，需要将待更换的显示模组周侧的显示模组全部取下，才能实现该显示异常的显示模组的更换。特别地，对于由多个显示模组组成的拼接显示屏，当需要更换拼接屏中间区域发生显示异常的显示模组时，需要将除了待更换的显示模组以外的其他显示模组全部取下，才能实现显示模组的更换，由此会大大降低显示模组的更换效率。\n\n[0089]针对上述技术问题，本申请实施例还提供一种拼接显示装置中显示异常的显示模组的更换方法。其中，所述拼接显示装置可以为由前述实施例中拼接显示装置的组装方法组装得到的拼接显示装置100。\n\n[0090]结合图9(a)至图9(c)，当第一显示模组10发生显示异常而需要更换时，第一显示模组10的更换方法包括以下步骤：\n\n[0091]首先，采用第二吸附装置40吸附待更换的第一显示模组10周侧的第二显示模组20，以使待更换的第一显示模组10周侧的第二显示模组20从背板100a上脱离，如图9(a)所示；\n\n[0092]其次，采用第一吸附装置30吸附待更换的第一显示模组10，以使待更换的第一显示模组10从背板100a上脱离，如图9(b)所示；\n\n[0093]最后，将新的显示正常的第一显示模组10’以及自背板100a上取下的第二显示模组20按照前述实施例所述的拼接显示装置100的组装方法进行组装，并得到组装后的拼接显示装置100’，如图9(c)所示。\n\n[0094]当第一显示模组10和第二显示模组20的数量为多个时，若需要更换的第一显示模组10位于拼接显示装置100的中心区域，只需要取下与待更换的第一显示模组10相邻的第二显示模组20，而不需要将待更换的第一显示模组10周侧的所有第二显示模组20均取下，从而可以大大提高显示异常的显示模组的更换效率。\n\n[0095]结合图10(a)至图10(c)，当第二显示模组20发生显示异常而需要更换时，第二显示模组20的更换方法包括以下步骤：\n\n[0096]首先，情形1：第一显示模组10一侧的第二显示模组20需要更换时，采用第二吸附装置40吸附待更换的第二显示模组20，以使待更换的第二显示模组20从背板100a上脱离，如图10(a)所示；情形2：第一显示模组10两侧及以上的第二显示模组20均需要更换时，采用第二吸附装置40吸附待更换的第二显示模组20，以使待更换的第二显示模组20从背板100a上脱离，如图10(b)所示。\n\n[0097]其次，以上述情形2为例，在将待更换的第二显示模组20从背板100a上取下之后，将新的显示正常的第二显示模组20’按照前述实施例所述的拼接显示装置100的组装方法转移至背板100a上，并得到新的拼接显示装置100’，如图10(c)所示。\n\n[0098]以上对本申请实施例所提供的一种拼接显示装置及拼接显示装置的组装方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种拼接显示装置及拼接显示装置的组装方法。\n\n背景技术\n\n[0002]目前，现有的微型发光二极管(MicroLight-Emitting Diode，Micro LED)拼接屏通常是通过将Micro LED玻璃基板贴合在有定位孔的背板上，在展示支撑架上通过定位柱与背板的定位孔相互配合进行组装。\n\n[0003]然而，当将多个Micro LED玻璃基板贴合在背板上时，存在组装公差，当背板固定在定位孔上后，定位孔处也存在机加工公差，且任意相邻定位孔均存在机加工误差。由此，当多个背板组装在展示支架上后，由于公差的累计，会造成相邻Micro LED玻璃基板之间存在不均一且较大的缝隙，从而降低了Micro LED拼接屏的视觉品味。\n\n发明内容\n\n[0004]本申请实施例提供一种拼接显示装置及拼接显示装置的组装方法，以解决现有技术中Micro LED拼接屏的视觉品味降低的技术问题。\n\n[0005]本申请实施例提供一种拼接显示装置，所述拼接显示装置包括：\n\n[0006]背板；\n\n[0007]至少一第一显示模组，所述第一显示模组设置于所述背板上，所述第一显示模组具有第一拼接面；以及\n\n[0008]至少一第二显示模组，所述第二显示模组设置于所述背板上，且与所述第一显示模组拼接设置，所述第二显示模组具有第二拼接面，所述第二拼接面与第一拼接面相对设置；\n\n[0009]其中，所述第一拼接面于所述背板所在平面的正投影与所述第二拼接面于所述背板所在平面的正投影至少部分重叠。\n\n[0010]可选的，在本申请的一些实施例中，所述第一显示模组包括依次设置于所述背板上的第一显示主体和第一基板，所述第一拼接面为所述第一基板的侧面；\n\n[0011]所述第二显示模组包括依次设置于所述背板上的第二显示主体和第二基板，所述第二拼接面为所述第二基板的侧面。\n\n[0012]可选的，在本申请的一些实施例中，所述第一基板靠近所述第一显示主体的一面为第一表面，所述第一拼接面与所述第一表面相连，所述第一拼接面与所述第一表面形成第一倾斜角M，0°[0013]所述第二基板靠近所述第二显示主体的一面为第二表面，所述第二拼接面与所述第二表面相连，所述第二拼接面与所述第二表面形成第二倾斜角N，90°[0014]可选的，在本申请的一些实施例中，M和N之和等于180°。\n\n[0015]可选的，在本申请的一些实施例中，所述第一基板包括依次首尾相连的第一侧面、第二侧面、第三侧面以及第四侧面，所述第一侧面为所述第一拼接面，所述第二侧面、所述第三侧面以及所述第四侧面均与所述第一表面形成所述第一倾斜角M；\n\n[0016]所述第二基板包括依次首尾相连的第五侧面、第六侧面、第七侧面以及第八侧面，所述第五侧面为所述第二拼接面，所述第六侧面、所述第七侧面以及所述第八侧面均与所述第二表面形成所述第二倾斜角N。\n\n[0017]可选的，在本申请的一些实施例中，所述第一拼接面为凹面，所述凹面向远离所述第二显示模组的方向凹陷设置，所述第二拼接面为凸面，所述凸面向靠近所述第一显示模组的方向凸出设置，所述凹面和所述凸面相匹配。\n\n[0018]可选的，在本申请的一些实施例中，所述第一显示主体包括依次设置于所述背板上的第三基板和第一发光主体，所述第一发光主体位于所述第一基板和所述第三基板之间，所述第一拼接面于所述背板所在平面的正投影位于所述第三基板于所述背板所在平面的正投影的外侧；\n\n[0019]所述第二显示主体包括依次设置于所述背板上的第四基板和第二发光主体，所述第二发光主体位于所述第二基板和所述第四基板之间，所述第二拼接面于所述背板所在平面的正投影位于所述第四基板于所述背板所在平面的正投影的外侧。\n\n[0020]可选的，在本申请的一些实施例中，所述拼接显示装置包括一支撑基板和设置于所述支撑基板上的至少两个拼接显示单元，每一所述拼接显示单元包括所述背板、至少一所述第一显示模组以及至少一所述第二显示模组。\n\n[0021]本申请实施例还提供一种拼接显示装置的组装方法，其包括以下步骤：\n\n[0022]提供一背板、至少一第一显示模组以及至少两个第二显示模组，所述第一显示模组具有至少相邻的两个第一拼接面，所述第二显示模组具有至少一第二拼接面；\n\n[0023]将所述第一显示模组和所述第二显示模组转移至所述背板上，每一所述第二显示模组的所述第二拼接面与对应的所述第一拼接面相对设置，所述第一拼接面于所述背板所在平面的正投影与所述第二拼接面于所述背板所在平面的正投影至少部分重叠。\n\n[0024]可选的，在本申请的一些实施例中，所述第一显示模组包括依次设置的第一显示主体和第一基板，所述第一基板的至少相邻两个侧面均为所述第一拼接面，所述第一基板靠近所述第一显示主体的一面为第一表面，所述第一拼接面与所述第一表面相连，所述第一拼接面与所述第一表面形成第一倾斜角M，0°[0025]采用第一吸附装置将所述第一显示模组转移至所述背板上；\n\n[0026]采用第二吸附装置将所述第二显示模组转移至所述背板上，以使所述第二拼接面与对应的所述第一拼接面贴合。\n\n[0027]相较于现有技术中的拼接显示装置，在本申请提供的拼接显示装置中，第一显示模组具有第一拼接面，第二显示模组具有第二拼接面，第二拼接面和第一拼接面相对设置，本申请通过使第一拼接面于背板所在平面的正投影与第二拼接面于背板所在平面的正投影至少部分重叠，减小了第一拼接面和第二拼接面之间的缝隙，从而可以减小第一显示模组和第二显示模组之间的缝隙，以提高拼接显示装置的视觉品味。\n\n附图说明\n\n[0028]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0029]图1是本申请第一实施例提供的拼接显示装置的结构示意图。\n\n[0030]图2是本申请第二实施例提供的拼接显示装置的结构示意图。\n\n[0031]图3是本申请第二实施例提供的拼接显示装置中的第一显示模组的俯视示意图。\n\n[0032]图4是本申请第二实施例提供的拼接显示装置中的第二显示模组的俯视示意图。\n\n[0033]图5是本申请第三实施例提供的拼接显示装置的结构示意图。\n\n[0034]图6是本申请第四实施例提供的拼接显示装置的结构示意图。\n\n[0035]图7是本申请提供的拼接显示装置的组装方法的流程示意图。\n\n[0036]图8(a)至8(d)是本申请提供的拼接显示装置的组装方法中各阶段得到的结构示意图。\n\n[0037]图9(a)至9(c)是本申请提供的拼接显示装置中第一显示模组显示异常时的更换方法的流程结构示意图。\n\n[0038]图10(a)至10(c)是本申请提供的拼接显示装置中第二显示模组显示异常时的更换方法的流程结构示意图。\n\n具体实施方式\n\n[0039]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0040]本申请实施例提供一种拼接显示装置及拼接显示装置的组装方法。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0041]本申请提供一种拼接显示装置，所述拼接显示装置包括背板、至少一第一显示模组以及至少一第二显示模组。所述第一显示模组设置于所述背板上。所述第一显示模组具有第一拼接面。所述第二显示模组设置于所述背板上，且与所述第一显示模组拼接设置。所述第二显示模组具有第二拼接面，所述第二拼接面与第一拼接面相对设置。所述第一拼接面于所述背板所在平面的正投影与所述第二拼接面于所述背板所在平面的正投影至少部分重叠。\n\n[0042]由此，在本申请提供的拼接显示装置中，通过使第一拼接面于背板所在平面的正投影与第二拼接面于背板所在平面的正投影至少部分重叠，减小了第一拼接面和第二拼接面之间的缝隙，从而可以减小第一显示模组和第二显示模组之间的缝隙，以提高拼接显示装置的视觉品味。\n\n[0043]请参照图1，本申请第一实施例提供一种拼接显示装置100。拼接显示装置100包括背板100a、至少一第一显示模组10以及至少一第二显示模组20。第一显示模组10设置于背板100a上。第一显示模组10具有第一拼接面10a。第二显示模组20设置于背板100a上。第二显示模组20与第一显示模组10拼接设置。第二显示模组20具有第二拼接面20a。第二拼接面20a与第一拼接面10a相对设置。第一拼接面10a于背板100a所在平面的正投影与第二拼接面20a于背板100a所在平面的正投影至少部分重叠。\n\n[0044]需要说明的是，本申请中第一显示模组10和第二显示模组20的数量可以根据实际情况进行设定，本实施例仅示意出第一显示模组10和第二显示模组20的数量均为一个时的结构，但并不限于此。\n\n[0045]具体的，背板100a用于支撑第一显示模组10和第二显示模组20。其中，背板100a可以为刚性背板，也可以为柔性背板，背板100a的具体材质可以参照现有技术，本申请对此不作限定。\n\n[0046]需要说明的是，在本申请中，第一显示模组10及第二显示模组20靠近背板100a的一侧均可以单独对应设置一支撑背板(图中未示出)，所述支撑背板用于支撑第一显示模组10和第二显示模组20，并避免第一显示模组10和第二显示模组20在组装过程中发生磨损。\n\n[0047]第一显示模组10包括依次设置于背板100a上的第一显示主体11和第一基板12。第一显示主体11可以为Micro LED灯板，也可以为次毫米级发光二极管(MiniLight-EmittingDiode，Mini LED)灯板，本申请以下各实施例仅以第一显示主体11为Micro LED灯板为例进行说明，但并不限于此。\n\n[0048]第一显示主体11包括依次设置于背板100a上的第三基板111和第一发光主体112。第一发光主体112位于第一基板12和第三基板111之间。其中，第三基板111为驱动基板，用于驱动第一发光主体112发光。第三基板111可以为玻璃基的驱动基板。第一发光主体112为Micro LED显示层，Micro LED显示层的具体结构可以参照现有技术，在此不再赘述。\n\n[0049]第一基板12可以为封装基板。所述封装基板可以为玻璃基板，也可以为PCB基板。在本实施例中，第一基板12为玻璃基板。由于玻璃基板具有良好的平整度，因此，使用玻璃基板为封装基板时，能够提高拼接显示装置100的显示效果。\n\n[0050]在本实施例中，第一拼接面10a为第一基板12的侧面。第一基板12靠近第一显示主体11的一面为第一表面12a。第一拼接面10a与第一表面12a相连。第一拼接面10a与第一表面12a形成第一倾斜角M。0°[0051]第二显示模组20包括依次设置于背板100a上的第二显示主体21和第二基板22。第二显示主体21可以为Micro LED灯板，也可以为Mini LED灯板，本申请以下各实施例仅以第二显示主体21为Micro LED灯板为例进行说明，但并不限于此。\n\n[0052]第二显示主体21包括依次设置于背板100a上的第四基板211和第二发光主体212。第二发光主体212位于第二基板22和第四基板211之间。其中，第四基板211为驱动基板，用于驱动第二发光主体212发光。第四基板211可以为玻璃基的驱动基板。第二发光主体212为Micro LED显示层，Micro LED显示层的具体结构可以参照现有技术，在此不再赘述。\n\n[0053]第二基板22可以为封装基板。所述封装基板可以为玻璃基板，也可以为PCB基板。在本实施例中，第二基板22为玻璃基板。由于玻璃基板具有良好的平整度，因此，使用玻璃基板为封装基板时，能够提高拼接显示装置100的显示效果。\n\n[0054]在本实施例中，第二拼接面20a为第二基板22的侧面。第二基板22靠近第二显示主体21的一面为第二表面22a。第二拼接面20a与第二表面22a相连。第二拼接面20a与第二表面22a形成第二倾斜角N。90°[0055]在本实施例中，M和N之和等于180°。上述设置能够使得第一拼接面10a和第二拼接面20a在拼接后完全贴合，进而可以避免第一显示模组10和第二显示模组20之间产生缝隙，从而能够提高拼接显示装置100的视觉品味。需要说明的是，在一些实施例中，M和N之和还可以小于180°，在此不再赘述。\n\n[0056]进一步的，第一拼接面10a于背板100a所在平面的正投影位于第三基板111于背板100a所在平面的正投影的外侧。第二拼接面20a于背板100a所在平面的正投影位于第四基板211于背板100a所在平面的正投影的外侧。其中，第一显示主体11和第二显示主体21之间具有拼接缝(图中未标识)，第一拼接面10a和第二拼接面20a于背板100a所在平面的正投影均位于所述拼接缝于背板100a所在平面的正投影内。\n\n[0057]在上述设置中，第一基板12的尺寸大于第三基板111的尺寸，第二基板22的尺寸大于第四基板211的尺寸，进而能够使第一显示主体11和第二显示主体21之间的拼缝最小化，从而可以进一步提高拼接显示装置100的显示效果。\n\n[0058]需要说明的是，在本实施例中，拼接显示装置100还可以包括与背板100a固定的支撑架(图中未示出)，支撑架的具体结构可以参照现有技术，在此不再赘述。\n\n[0059]请参照图2至图4，本申请第二实施例提供一种拼接显示装置100。本申请第二实施例提供的拼接显示装置100与第一实施例的不同之处在于：第一基板12包括依次首尾相连的第一侧面121、第二侧面122、第三侧面123以及第四侧面124。第一侧面121为第一拼接面10a。第二侧面122、第三侧面123以及第四侧面124均与第一表面12a形成第一倾斜角M。第二基板22包括依次首尾相连的第五侧面221、第六侧面222、第七侧面223以及第八侧面224。第五侧面221为第二拼接面20a。第六侧面222、第七侧面223以及第八侧面224均与第二表面22a形成第二倾斜角N。\n\n[0060]当第一显示模组10及第二显示模组20的数量均为两个及以上时，本实施例通过使第一基板12的四个侧面与第一表面12a均形成第一倾斜角M，且第二基板22的四个侧面与第二表面22a之间均形成第二倾斜角N，可以满足多个显示模组的拼接需求。\n\n[0061]请参照图5，本申请第三实施例提供一种拼接显示装置100。本申请第三实施例提供的拼接显示装置100与第二实施例的不同之处在于：第一拼接面10a为凹面。凹面向远离第二显示模组20的方向凹陷设置。第二拼接面20a为凸面。凸面向靠近第一显示模组10的方向凸出设置。凹面和凸面相匹配。\n\n[0062]在本实施例中，凹面和凸面贴合设置，由此可以避免第一显示模组10和第二显示模组20之间产生缝隙。在一些实施例中，由于拼接公差的产生，凹面和凸面之间也可以具有一定间隙，只要满足凹面和凸面在背板100a所在平面的正投影有重叠，均在本申请的保护范围内。\n\n[0063]本实施例通过将第一拼接面10a设置为凹面，第二拼接面20a设置为与凹面相匹配的凸面，由于凹面和凸面贴合设置，因此，可以避免第一显示模组10和第二显示模组20之间产生缝隙，从而能够提高拼接显示装置100的视觉品味。\n\n[0064]请参照图6，本申请第四实施例提供一种拼接显示装置100。本申请第四实施例提供的拼接显示装置100与第二实施例的不同之处在于：拼接显示装置100包括一支撑基板100A和设置于支撑基板100A上的至少两个拼接显示单元101。每一拼接显示单元101包括背板100a、至少一第一显示模组10以及至少一第二显示模组20。\n\n[0065]本申请的发明人在实验探究中发现，当一个显示模组对应一个背板时，由于多个背板与拼接显示装置用的支撑基板之间均存在组装公差，因此，当将多个设置有背板的显示模组组装至支撑基板上时，由于多个背板之间组装公差的存在，在组装之后的拼接显示装置中，多个相邻显示模组之间均会存在明显的缝隙，从而不利于提高拼接显示装置的视觉品味。\n\n[0066]在本实施例中，通过使第一显示模组10和第二显示模组20共用一个背板100a，当需要拼接多个显示模组时，在第一显示模组10和第二显示模组20的数量一定时，可以减少背板100a的使用数量，从而能够降低因背板100a数量较多而造成的组装公差，进而能够大大提高拼接显示装置100的视觉品味。\n\n[0067]需要说明的是，在本实施例中，拼接显示装置100中的拼接显示单元101的数量可以根据实际应用需求进行设定，本实施例仅示意出了拼接显示单元101的数量为两个时的结构，但并不能理解为对本申请的限制。另外，在每一拼接显示单元101中，第一显示模组10和第二显示模组20的数量也可以根据所需拼接显示装置100的尺寸进行设定，本申请对此不作限定。\n\n[0068]请参照图7，本申请实施例还提供一种拼接显示装置的组装方法，所述拼接显示装置的组装方法包括以下步骤：\n\n[0069]B1：提供一背板、至少一第一显示模组以及至少两个第二显示模组，所述第一显示模组具有至少相邻的两个第一拼接面，所述第二显示模组具有至少一第二拼接面；\n\n[0070]B2：将所述第一显示模组和所述第二显示模组转移至所述背板上，每一所述第二显示模组的所述第二拼接面与对应的所述第一拼接面相对设置，所述第一拼接面于所述背板所在平面的正投影与所述第二拼接面于所述背板所在平面的正投影至少部分重叠。\n\n[0071]在本实施例提供的拼接显示装置的组装方法中，将第一显示模组和第二显示模组转移至背板上之后，由于第一拼接面于背板所在平面的正投影与第二拼接面于背板所在平面的正投影至少部分重叠，因此，组装之后的第一拼接面和第二拼接面之间的缝隙可以减小，也即，第一显示模组和相邻的第二显示模组之间的拼缝可以减小，从而能够提高拼接显示装置的视觉品味。\n\n[0072]需要说明的是，本实施例仅示意出第一显示模组的数量为一个、第二显示模组的数量为两个时的结构，但并不限于此。其中，第一拼接面的数量和第二拼接面的数量可以根据第一显示模组和第二显示模组的拼接需求进行设定，只要保证第一显示模组的拼接侧设有第一拼接面且第二显示模组的拼接侧设有第二拼接面，均在本申请的保护范围内。\n\n[0073]下面对本实施例提供的拼接显示装置的组装方法进行详细的阐述。\n\n[0074]B1：提供一背板100a、一第一显示模组10以及两个第二显示模组20，第一显示模组10具有至少相邻的两个第一拼接面10a，第二显示模组20具有至少一第二拼接面20a，如图8(a)所示。\n\n[0075]其中，在步骤B1之前，还包括：对第一基板12的侧面进行磨边处理，以对应形成第一拼接面10a，以及对第二基板22的侧面进行磨边处理，以对应形成第二拼接面20a。\n\n[0076]在本实施例中，第一显示模组10包括依次设置的第一显示主体11和第一基板12。第一显示主体11包括依次设置的第三基板111和第一发光主体112。第一发光主体112位于第一基板12和第三基板111之间。第一基板12的至少相邻两个侧面均为第一拼接面10a。第一基板12靠近第一显示主体11的一面为第一表面12a。第一拼接面10a与第一表面12a相连。第一拼接面10a与第一表面12a形成第一倾斜角M。0°[0077]第二显示模组20包括依次设置的第二显示主体21和第二基板22。第二显示主体21包括依次设置的第四基板211和第二发光主体212。第二发光主体212位于第二基板22和第四基板211之间。第二基板22的至少一个侧面为第二拼接面20a。第二基板22靠近第二显示主体21的一面为第二表面22a。第二拼接面20a与第二表面22a相连。第二拼接面20a与第二表面22a形成第二倾斜角N。90°[0078]在本实施例中，M和N之和等于180°。在一些实施例中，M和N之和也可以小于180°，在此不再赘述。\n\n[0079]B2：将第一显示模组10和第二显示模组20转移至背板100a上，每一第二显示模组20的第二拼接面20a与对应的第一拼接面10a相对设置，第一拼接面10a于背板100a所在平面的正投影与第二拼接面20a于背板100a所在平面的正投影至少部分重叠。\n\n[0080]其中，步骤B2具体包括以下步骤：\n\n[0081]B21：采用第一吸附装置30将第一显示模组10转移至背板100a上，如图8(b)所示。\n\n[0082]其中，第一吸附装置30包括第一吸盘301和连接于第一吸盘301的第一吸管302。\n\n[0083]B22：采用第二吸附装置40将第二显示模组20转移至背板100a上，以使第二拼接面20a与对应的第一拼接面10a贴合，如图8(c)和图8(d)所示。\n\n[0084]其中，第二吸附装置40包括第二吸盘401和连接于第二吸盘401的第二吸管402。\n\n[0085]在本实施例中，在采用第二吸附装置40将第二显示模组20转移至背板100a上的过程中，可以沿垂直于背板100a的方向使第二显示模组20逐渐靠近第一显示模组10，并与第一显示模组10贴合。\n\n[0086]由于第一显示模组10的第一拼接面10a与第一表面12a之间的第一倾斜角M为锐角，第二显示模组20的第二拼接面20a与第二表面22a之间的第二倾斜角N为钝角，M和N之和为180°，当沿垂直于背板100a的方向转移第二显示模组20时，在第一拼接面10a和第二拼接面20a贴合之前，第一显示模组10和第二显示模组20之间不会因接触而产生磨损。另外，由于第一显示模组10中的第一基板12和第三基板111以及第二显示模组20中的第二基板22和第四基板211均为玻璃材质，因此，上述设置可以降低第一显示模组10和第二显示模组20组装过程中拼接侧的破碎几率，从而能够提高拼接显示装置100的产品良率。\n\n[0087]对于拼接显示屏来说，当拼接显示屏中的显示模组发生显示异常时，通常需要将显示异常的显示模组从拼接显示屏中取下，并更换为新的显示模组。在现有的拼接显示屏中，显示模组通过背板连接至支撑架上，并通过螺丝来实现背板和支撑架的位置调节，以调节相邻显示模组之间的缝隙。\n\n[0088]本申请的发明人在实验探究中发现，当任意相邻的显示模组之间的缝隙过小时，若显示模组出现显示异常而需要更换时，需要将待更换的显示模组周侧的显示模组全部取下，才能实现该显示异常的显示模组的更换。特别地，对于由多个显示模组组成的拼接显示屏，当需要更换拼接屏中间区域发生显示异常的显示模组时，需要将除了待更换的显示模组以外的其他显示模组全部取下，才能实现显示模组的更换，由此会大大降低显示模组的更换效率。\n\n[0089]针对上述技术问题，本申请实施例还提供一种拼接显示装置中显示异常的显示模组的更换方法。其中，所述拼接显示装置可以为由前述实施例中拼接显示装置的组装方法组装得到的拼接显示装置100。\n\n[0090]结合图9(a)至图9(c)，当第一显示模组10发生显示异常而需要更换时，第一显示模组10的更换方法包括以下步骤：\n\n[0091]首先，采用第二吸附装置40吸附待更换的第一显示模组10周侧的第二显示模组20，以使待更换的第一显示模组10周侧的第二显示模组20从背板100a上脱离，如图9(a)所示；\n\n[0092]其次，采用第一吸附装置30吸附待更换的第一显示模组10，以使待更换的第一显示模组10从背板100a上脱离，如图9(b)所示；\n\n[0093]最后，将新的显示正常的第一显示模组10’以及自背板100a上取下的第二显示模组20按照前述实施例所述的拼接显示装置100的组装方法进行组装，并得到组装后的拼接显示装置100’，如图9(c)所示。\n\n[0094]当第一显示模组10和第二显示模组20的数量为多个时，若需要更换的第一显示模组10位于拼接显示装置100的中心区域，只需要取下与待更换的第一显示模组10相邻的第二显示模组20，而不需要将待更换的第一显示模组10周侧的所有第二显示模组20均取下，从而可以大大提高显示异常的显示模组的更换效率。\n\n[0095]结合图10(a)至图10(c)，当第二显示模组20发生显示异常而需要更换时，第二显示模组20的更换方法包括以下步骤：\n\n[0096]首先，情形1：第一显示模组10一侧的第二显示模组20需要更换时，采用第二吸附装置40吸附待更换的第二显示模组20，以使待更换的第二显示模组20从背板100a上脱离，如图10(a)所示；情形2：第一显示模组10两侧及以上的第二显示模组20均需要更换时，采用第二吸附装置40吸附待更换的第二显示模组20，以使待更换的第二显示模组20从背板100a上脱离，如图10(b)所示。\n\n[0097]其次，以上述情形2为例，在将待更换的第二显示模组20从背板100a上取下之后，将新的显示正常的第二显示模组20’按照前述实施例所述的拼接显示装置100的组装方法转移至背板100a上，并得到新的拼接显示装置100’，如图10(c)所示。\n\n[0098]以上对本申请实施例所提供的一种拼接显示装置及拼接显示装置的组装方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10961, 24015, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种3D显示系统及其显示方法。\n\n背景技术\n\n[0002]3D显示的种类有很多，其中一种就是色差式3D显示。色差式3D显示技术的成像原理是用两种不同的颜色将来源于两个不同视角上拍摄的影像在同一幅画面中完成印制，也可以称为分色立体成像技术。\n\n[0003]若想观看到3D效果，必须使用对应的红青、红蓝等3D眼镜观看，否则肉眼观看到的图像是重影且模糊的。以红青3D眼镜为例，红色的影像通过红色镜片(红色镜片的底色为红色，所以影像中的红色被过滤，即红色镜片只能分辨除红色之外的影像)，青色的影像通过青色镜片(青色镜片的底色为青色，所以影像中的青色被过滤，即青色镜片只能分辨除青色之外的影像)，即红青3D眼镜的两只镜片分别过滤了红色和青色这两种色彩，那么大脑便可以重叠两只眼睛看到的不同影像，从而出现3D立体效果，其缺点为分辨率低以及在画面边缘观看容易产生色偏，使得观看者的3D体验效果差，并且长期观看容易造成眩晕。故，有必要改善这一缺陷。\n\n发明内容\n\n[0004]本发明实施例提供一种3D显示系统，用于解决现有技术的色差式3D显示的分辨率低以及在画面边缘观看容易产生色偏，使得观看者的3D体验效果差，并且长期观看容易造成眩晕的技术问题。\n\n[0005]本发明实施例提供一种3D显示系统，包括显示装置和3D眼镜，所述显示装置包括显示面板以及设于所述显示面板下方的背光模组，所述背光模组包括均匀分布的多个第一微发光二极管、多个第二微发光二极管以及多个第三微发光二极管；所述3D眼镜包括第一镜片和第二镜片，所述第一镜片的颜色与所述第一微发光二极管的出光颜色一致，所述第二镜片的颜色与所述第二微发光二极管的出光颜色或所述第二微发光二极管和所述第三微发光二极管的混合出光颜色一致；其中，所述第一微发光二极管与所述第二微发光二极管交替工作，当所述第二镜片的颜色与所述第二微发光二极管的出光颜色一致时，所述第三微发光二极管不工作，当所述第二镜片的颜色与所述第二微发光二极管和所述第三微发光二极管的混合出光颜色一致时，所述第三微发光二极管与所述第二微发光二极管同时工作。\n\n[0006]在本发明实施例提供的3D显示系统中，所述第一微发光二极管、所述第二微发光二极管以及所述第三微发光二极管的出光颜色分别选自红色、绿色、蓝色中的一种。\n\n[0007]在本发明实施例提供的3D显示系统中，在奇数帧时，所述第一微发光二极管工作；在偶数帧时，所述第二微发光二极管工作或所述第三微发光二极管与所述第二微发光二极管同时工作。\n\n[0008]在本发明实施例提供的3D显示系统中，所述第一镜片和所述第二镜片均为液晶屏，且所述液晶屏能够控制为在透光状态和遮光状态之间切换。\n\n[0009]在本发明实施例提供的3D显示系统中，当所述第一微发光二极管工作时，所述第一镜片为透光状态，所述第二镜片为遮光状态；当所述第二微发光二极管工作或所述第三微发光二极管与所述第二微发光二极管同时工作时，所述第一镜片为遮光状态，所述第二镜片为透光状态。\n\n[0010]在本发明实施例提供的3D显示系统中，所述显示装置还包括设于所述背光模组上的同步信号发射器，所述3D眼镜上设置有同步信号接收器，所述同步信号接收器用于接收所述同步信号发射器发出的同步信号。\n\n[0011]在本发明实施例提供的3D显示系统中，所述显示装置还包括与所述显示面板电连接的驱动电路板，所述驱动电路板上设置有蓝牙模块，所述3D眼镜上设置有蓝牙接收模块。\n\n[0012]在本发明实施例提供的3D显示系统中，所述背光模组还包括基底、TFT阵列层以及透明胶层；所述TFT阵列层位于所述基底面向所述显示面板的一侧，所述多个第一微发光二极管、所述多个第二微发光二极管以及所述多个第三微发光二极管位于所述TFT阵列层远离所述基底的一侧，所述透明胶层位于所述基底面向所述显示面板的一侧并覆盖所述多个第一微发光二极管、所述多个第二微发光二极管以及所述多个第三微发光二极管；其中，所述TFT阵列层包括多个TFT，任一所述TFT对应驱动一个所述第一微发光二极管、或一个所述第二微发光二极管、或一个所述第三微发光二极管。\n\n[0013]本发明实施例还提供一种3D显示系统的显示方法，包括步骤：\n\n[0014]S1、提供一3D显示系统，包括显示装置和3D眼镜，所述显示装置包括显示面板以及设于所述显示面板下方的背光模组，所述背光模组包括均匀分布的多个第一微发光二极管、多个第二微发光二极管以及多个第三微发光二极管；所述3D眼镜包括第一镜片和第二镜片，所述第一镜片的颜色与所述第一微发光二极管的出光颜色一致，所述第二镜片的颜色与所述第二微发光二极管的出光颜色或所述第二微发光二极管和所述第三微发光二极管的混合出光颜色一致；\n\n[0015]S2、点亮所述第一微发光二极管；\n\n[0016]S3、当所述第二镜片的颜色与所述第二微发光二极管的出光颜色一致时，点亮所述第二微发光二极管，当所述第二镜片的颜色与所述第二微发光二极管和所述第三微发光二极管的混合出光颜色一致时，同时点亮所述第二微发光二极管和所述第三微发光二极管；\n\n[0017]S4、依次循环所述步骤S2和所述步骤S3，直至显示结束。\n\n[0018]在本发明实施例提供的3D显示系统的显示方法中，所述第一镜片和所述第二镜片均为液晶屏，且所述液晶屏能够控制为在透光状态和遮光状态之间切换。\n\n[0019]在本发明实施例提供的3D显示系统的显示方法中，所述步骤S2中，点亮所述第一微发光二极管以显示奇数帧，控制所述第一镜片为透光状态，控制所述第二镜片为遮光状态；所述步骤S3中，点亮所述第二微发光二极管或同时点亮所述第二微发光二极管和所述第三微发光二极管以显示偶数帧，控制所述第一镜片为遮光状态，控制所述第二镜片为透光状态。\n\n[0020]有益效果：本发明实施例提供的一种3D显示系统，包括显示装置和3D眼镜，显示装置包括显示面板以及设于显示面板下方的背光模组，背光模组包括均匀分布的多个第一微发光二极管、多个第二微发光二极管以及多个第三微发光二极管；3D眼镜包括第一镜片和第二镜片，第一镜片的颜色与第一微发光二极管的出光颜色一致，第二镜片的颜色与第二微发光二极管的出光颜色或第二微发光二极管和第三微发光二极管的混合出光颜色一致；其中，第一微发光二极管与第二微发光二极管交替工作，当第二镜片的颜色与第二微发光二极管的出光颜色一致时，第三微发光二极管不工作，当第二镜片的颜色与第二微发光二极管和第三微发光二极管的混合出光颜色一致时，第三微发光二极管与第二微发光二极管同时工作。本发明通过控制背光模组上的第一微发光二极管、第二微发光二极管交替工作，第三微发光二极管不工作或与第二微发光二极管同时工作，可以在不降低显示屏分辨率的基础上实现色差式3D和快门式3D的结合使用，提高用户的3D体验效果。\n\n附图说明\n\n[0021]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。\n\n[0022]图1是本发明实施例提供的3D显示系统的基本结构示意图。\n\n[0023]图2是本发明实施例提供的3D显示系统的工作时序示意图。\n\n[0024]图3是本发明实施例提供的3D显示系统的显示方法流程图。\n\n具体实施方式\n\n[0025]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。在附图中，为了清晰及便于理解和描述，附图中绘示的组件的尺寸和厚度并未按照比例。\n\n[0026]如图1所示，为本发明实施例提供的3D显示系统的基本结构示意图，所述3D显示系统包括显示装置10和3D眼镜20，所述显示装置10包括显示面板11以及设于所述显示面板11下方的背光模组12，所述背光模组12包括均匀分布的多个第一微发光二极管1231、多个第二微发光二极管1232以及多个第三微发光二极管1233；所述3D眼镜20包括第一镜片201和第二镜片202，所述第一镜片201的颜色与所述第一微发光二极管1231的出光颜色一致，所述第二镜片202的颜色与所述第二微发光二极管1232的出光颜色或所述第二微发光二极管1232和所述第三微发光二极管1233的混合出光颜色一致。\n\n[0027]其中，所述第一微发光二极管1231与所述第二微发光二极管1232交替工作，当所述第二镜片202的颜色与所述第二微发光二极管1232的出光颜色一致时，所述第三微发光二极管1233不工作，当所述第二镜片202的颜色与所述第二微发光二极管1232和所述第三微发光二极管1233的混合出光颜色一致时，所述第三微发光二极管1233与所述第二微发光二极管1232同时工作。\n\n[0028]可以理解的是，本发明提供的3D显示系统是通过控制背光模组12上的第一微发光二极管1231、第二微发光二极管1232以及第三微发光二极管1233分时工作来提供不同颜色的背光。具体的，有以下两种情况：第一种情况是第一微发光二极管1231与第二微发光二极管1232交替工作，且第三微发光二极管1233不工作，则显示面板11上显示的图像是分别由第一微发光二极管1231和第二微发光二极管1232的出光颜色来决定的，当第一微发光二极管1231工作时，通过第一镜片201能分辨除第一微发光二极管1231的出光颜色之外的颜色，即通过第一镜片201能看到由第一微发光二极管1231激发的图像；当第二微发光二极管1232工作时，通过第二镜片202能分辨除第二微发光二极管1232的出光颜色之外的颜色，即通过第二镜片202能看到由第二微发光二极管1232激发的图像，当显示面板11的刷新率大于或等于120赫兹时，由于双眼的视差以及视觉暂留效应，两幅图像在大脑中合成一幅具有景深的图像，即可以看到3D立体效果，即实现了色差式3D和快门式3D的结合，由于第一微发光二极管1231、第二微发光二极管1232均匀的分布在显示面板11的下方，因此，无论从中间区域还是边缘区域观看，都不会产生色偏，提高了用户的3D体验效果。\n\n[0029]第二种情况是第一微发光二极管1231与第二微发光二极管1232交替工作，且第三微发光二极管1233与第二微发光二极管1232同时工作，则显示面板11上显示的图像是分别由第一微发光二极管1231的出光颜色、第二微发光二极管1232和第三微发光二极管1233的混合出光颜色来决定的，当第一微发光二极管1231工作时，第一镜片201能分辨除第一微发光二极管1231的出光颜色之外的颜色，即通过第一镜片201能看到由第一微发光二极管1231激发的图像；当第二微发光二极管1232和第三微发光二极管1233同时工作时，第二镜片202能分辨除第二微发光二极管1232和第三微发光二极管1233的混合出光颜色之外的颜色，即通过第二镜片202能看到由第二微发光二极管1232和第三微发光二极管1233共同激发的图像，其显示原理与第一种情况类似，此处不再赘述。\n\n[0030]在一种实施例中，第一微发光二极管1231、第二微发光二极管1232以及第三微发光二极管1233的出光颜色分别选自红色、绿色、蓝色中的一种。可以理解的是，由于第一微发光二极管1231、第二微发光二极管1232、第三微发光二极管1233的出光颜色各不相同，当第一微发光二极管1231为红色、第二微发光二极管1232为绿色时，第三微发光二极管1233则为蓝色，在其它实施例中，第一微发光二极管1231、第二微发光二极管1232、第三微发光二极管1233还可以分别为红色、蓝色、绿色；绿色、红色、蓝色；绿色、蓝色、红色；蓝色、红色、绿色；蓝色、绿色、红色。\n\n[0031]本发明实施例以第一微发光二极管1231、第二微发光二极管1232、第三微发光二极管1233分别为红色、蓝色、绿色为例进行说明，其它类似情况不进行赘述。可以理解的是，当第一微发光二极管1231、第二微发光二极管1232、第三微发光二极管1233分别为红色、蓝色、绿色时，第一镜片201的颜色为红色，第二镜片202的颜色为蓝色或青色(即蓝色和绿色的混合色)。\n\n[0032]在一种实施例中，背光模组12还包括基底121、TFT阵列层122以及透明胶层124；所述TFT阵列层122位于所述基底121面向所述显示面板11的一侧，所述多个第一微发光二极管1231、所述多个第二微发光二极管1232以及所述多个第三微发光二极管1233位于所述TFT阵列层122远离所述基底121的一侧，所述透明胶层124位于所述基底121面向所述显示面板11的一侧并覆盖所述多个第一微发光二极管1231、所述多个第二微发光二极管1232以及所述多个第三微发光二极管1233。\n\n[0033]其中，所述TFT阵列层122包括多个TFT，任一所述TFT对应驱动一个所述第一微发光二极管1231、或一个所述第二微发光二极管1232、或一个所述第三微发光二极管1233，即第一微发光二极管1231、第二微发光二极管1232以及第三微发光二极管1233均为主动发光，可以通过外围驱动电路分别控制第一微发光二极管1231、第二微发光二极管1232以及第三微发光二极管1233的开启和关闭。其中，所述透明胶层124用于保护第一微发光二极管1231、第二微发光二极管1232以及第三微发光二极管1233，以提高显示装置10的使用寿命。\n\n[0034]在一种实施例中，显示面板11包括阵列基板111、彩膜基板113以及夹设于阵列基板111和彩膜基板113之间的液晶分子层112，其中，彩膜基板113上设有多个彩色色阻，包括多个红色色阻1131、多个蓝色色阻1132以及多个绿色色阻1133。\n\n[0035]在一种实施例中，在奇数帧时，第一微发光二极管1231工作；在偶数帧时，第二微发光二极管1232工作或第三微发光二极管1233与第二微发光二极管1232同时工作。需要说明的是，上述的奇数帧和偶数帧可以互换，即另一种实施方式为：在偶数帧时，第一微发光二极管1231工作；在奇数帧时，第二微发光二极管1232工作或第三微发光二极管1233与第二微发光二极管1232同时工作。可以理解的是，本发明实施例通过把图像按帧一分为二，即把图像分为奇数帧和偶数帧，形成对应左眼和右眼的两组画面，连续交错显示出来，能够保持画面的原始分辨率，很轻松地让用户感受3D效果，而且不会造成画面亮度降低。\n\n[0036]具体的，奇数帧和偶数帧时显示的图像是将原始2D下的画面一分为二，按帧通过景深处理为对应于左右眼的两幅画面，当播放3D片源时，对应左右眼的画面会交替连续的播放，大脑综合处理左右眼视网膜上所成的图像从而可以产生3D立体效果。\n\n[0037]在一种实施例中，第一镜片201和第二镜片202均为液晶屏，且所述液晶屏能够控制为在透光状态和遮光状态之间切换。具体的，第一镜片201和第二镜片202由仅有开与关两种状态的液晶屏构成，不通电时镜片打开可以透过光线，通电时镜片关闭无光线透过。需要说明的是，本发明可以通过提高3D眼镜的液晶响应时间，从而增加镜片打开的稳态时间，则背光的打开时间就可以适当增加，使得佩戴3D眼镜观看图像的亮度有所提高，从而提升用户的3D体验效果。在其它实施例中，所述第一镜片201和所述第二镜片202也可以为被动式的滤色3D眼镜。\n\n[0038]在一种实施例中，当第一微发光二极管1231工作时，第一镜片201为透光状态，第二镜片202为遮光状态；当第二微发光二极管1232工作或第三微发光二极管1233与第二微发光二极管1232同时工作时，第一镜片201为遮光状态，第二镜片202为透光状态。\n\n[0039]可以理解的是，第一镜片201对应接收第一微发光二极管1231激发的图像，而第一微发光二极管1231对应激发奇数帧的图像，即奇数帧时，显示面板11显示奇数帧对应的图像，同时背光模组12中的第一微发光二极管1231亮起，相应的3D眼镜20中的第一镜片201的液晶屏打开，第二镜片202的液晶屏关闭，相应的左眼接受奇数帧的画面影像。\n\n[0040]可以理解的是，第二镜片202对应接收第二微发光二极管1232激发的图像或第二微发光二极管1232和第三微发光二极管1233共同激发的图像，而第二微发光二极管1232或第二微发光二极管1232和第三微发光二极管1233对应激发偶数帧的图像，即偶数帧时，显示面板11显示偶数帧对应的图像，同时背光模组12中的第二微发光二极管1232亮起、或第二微发光二极管1232和第三微发光二极管1233同时亮起，相应的3D眼镜20中的第二镜片202的液晶屏打开，第一镜片201的液晶屏关闭，相应的右眼接受偶数帧的画面影像。\n\n[0041]在一种实施例中，所述显示装置10还包括设于所述背光模组12上的同步信号发射器(图未示)，所述3D眼镜20上设置有同步信号接收器(图未示)，所述同步信号接收器用于接收所述同步信号发射器发出的同步信号。具体的，所述同步信号发射器为红外信号发射器，所述同步信号接收器为红外信号接收器。\n\n[0042]具体的，当显示装置10显示奇数帧图像时，同步信号发射器发射同步信号，同步信号接收器接收同步信号后控制第一镜片201打开，第二镜片202关闭；当显示装置10显示偶数帧图像时，同步信号发射器发射同步信号，同步信号接收器接收同步信号后控制第二镜片202打开，第一镜片201关闭，即同步信号发射器可以同步控制3D眼镜20的第一镜片201、第二镜片202的开和关，使双眼能够在正确的时刻看到相应画面。\n\n[0043]在其它实施例中，所述显示装置10还包括与所述显示面板11电连接的驱动电路板(图未示)，所述驱动电路板上设置有蓝牙模块(图未示)，所述3D眼镜20上设置有蓝牙接收模块(图未示)，即所述显示装置10还可以通过蓝牙与所述3D眼镜20进行同步信号的通信。\n\n[0044]接下来，请参阅图2，为本发明实施例提供的3D显示系统的工作时序示意图，当显示装置的刷新率为120赫兹时，每1/120秒切换一次，奇数帧时，显示左眼对应的图像(L)，与此同时，3D眼镜的左眼镜片打开，右眼镜片关闭；偶数帧时，显示右眼对应的图像(R)，与此同此，3D眼镜的左眼镜片关闭，右眼镜片打开，以实现在正确的时刻观看到正确的图像画面。需要说明的是，此处的奇数帧和偶数帧也可以互换。\n\n[0045]接下来，请参阅图3，为本发明实施例提供的3D显示系统的显示方法流程图，所述显示方法包括步骤：\n\n[0046]S1、提供一3D显示系统，包括显示装置和3D眼镜，所述显示装置包括显示面板以及设于所述显示面板下方的背光模组，所述背光模组包括均匀分布的多个第一微发光二极管、多个第二微发光二极管以及多个第三微发光二极管；所述3D眼镜包括第一镜片和第二镜片，所述第一镜片的颜色与所述第一微发光二极管的出光颜色一致，所述第二镜片的颜色与所述第二微发光二极管的出光颜色或所述第二微发光二极管和所述第三微发光二极管的混合出光颜色一致；\n\n[0047]S2、点亮所述第一微发光二极管；\n\n[0048]S3、当所述第二镜片的颜色与所述第二微发光二极管的出光颜色一致时，点亮所述第二微发光二极管，当所述第二镜片的颜色与所述第二微发光二极管和所述第三微发光二极管的混合出光颜色一致时，同时点亮所述第二微发光二极管和所述第三微发光二极管；\n\n[0049]S4、依次循环所述步骤S2和所述步骤S3，直至显示结束。\n\n[0050]需要说明的是，上述步骤S2和步骤S3的顺序可以互换，即也可以先点亮第二微发光二极管或先同时点亮第二微发光二极管和第三微发光二极管，后点亮第一微发光二极管。\n\n[0051]可以理解的是，本发明实施例提供的3D显示系统的显示方法是通过控制背光模组上的第一微发光二极管、第二微发光二极管以及第三微发光二极管分时点亮来提供不同颜色的背光。具体的，有以下两种情况：第一种情况是第二镜片的颜色与第二微发光二极管的出光颜色一致，则显示面板上显示的图像是分别由第一微发光二极管和第二微发光二极管的出光颜色来决定的，当第一微发光二极管被点亮时，通过第一镜片能分辨除第一微发光二极管的出光颜色之外的颜色，即通过第一镜片能看到由第一微发光二极管激发的图像；当第二微发光二极管被点亮时，通过第二镜片能分辨除第二微发光二极管的出光颜色之外的颜色，即通过第二镜片能看到由第二微发光二极管激发的图像，当显示面板的刷新率大于或等于120赫兹时，由于双眼的视差以及视觉暂留效应，两幅图像在大脑中合成一幅具有景深的图像，即可以看到3D立体效果，即实现了色差式3D和快门式3D的结合，由于第一微发光二极管、第二微发光二极管均匀的分布在显示面板的下方，因此，无论从中间区域还是边缘区域观看，都不会产生色偏，提高了用户的3D体验效果。\n\n[0052]第二种情况是第二镜片的颜色与第二微发光二极管和第三微发光二极管的混合出光颜色一致，则显示面板上显示的图像是分别由第一微发光二极管的出光颜色、第二微发光二极管和第三微发光二极管的混合出光颜色来决定的，当第一微发光二极管被点亮时，第一镜片能分辨除第一微发光二极管的出光颜色之外的颜色，即通过第一镜片能看到由第一微发光二极管激发的图像；当第二微发光二极管和第三微发光二极管同时被点亮时，第二镜片能分辨除第二微发光二极管和第三微发光二极管的混合出光颜色之外的颜色，即通过第二镜片能看到由第二微发光二极管和第三微发光二极管共同激发的图像，其显示原理与第一种情况类似，此处不再赘述。\n\n[0053]在本实施例中，第一微发光二极管、第二微发光二极管以及第三微发光二极管的出光颜色分别选自红色、绿色、蓝色中的一种。可以理解的是，由于第一微发光二极管、第二微发光二极管以及第三微发光二极管的出光颜色各不相同，当第一微发光二极管为红色、第二微发光二极管为绿色时，第三微发光二极管则为蓝色，在其它实施例中，第一微发光二极管、第二微发光二极管以及第三微发光二极管还可以分别为红色、蓝色、绿色；绿色、红色、蓝色；绿色、蓝色、红色；蓝色、红色、绿色；蓝色、绿色、红色。\n\n[0054]在本实施例中，所述第一镜片和所述第二镜片均为液晶屏，且所述液晶屏能够控制为在透光状态和遮光状态之间切换。具体的，第一镜片和第二镜片由仅有开与关两种状态的液晶屏构成，不通电时镜片打开可以透过光线，通电时镜片关闭无光线透过。在其他实施例中，所述第一镜片和所述第二镜片也可以为被动式的滤色3D眼镜。\n\n[0055]在本实施例中，所述步骤S2中，点亮所述第一微发光二极管以显示奇数帧，控制所述第一镜片为透光状态，控制所述第二镜片为遮光状态；所述步骤S3中，点亮所述第二微发光二极管或同时点亮所述第二微发光二极管和所述第三微发光二极管以显示偶数帧，控制所述第一镜片为遮光状态，控制所述第二镜片为透光状态。\n\n[0056]可以理解的是，第一镜片对应接收第一微发光二极管激发的图像，而第一微发光二极管对应激发奇数帧的图像，即奇数帧时，显示面板显示奇数帧对应的图像，同时背光模组中的第一微发光二极管点亮，相应的3D眼镜中的第一镜片的液晶屏打开，第二镜片的液晶屏关闭，相应的左眼接受奇数帧的画面影像。\n\n[0057]可以理解的是，第二镜片对应接收第二微发光二极管激发的图像或第二微发光二极管和第三微发光二极管共同激发的图像，而第二微发光二极管或第二微发光二极管和第三微发光二极管对应激发偶数帧的图像，即偶数帧时，显示面板显示偶数帧对应的图像，同时背光模组中的第二微发光二极管点亮、或第二微发光二极管和第三微发光二极管同时点亮，相应的3D眼镜中的第二镜片的液晶屏打开，第一镜片的液晶屏关闭，相应的右眼接受偶数帧的画面影像。\n\n[0058]在一种实施例中，所述显示装置还包括设于所述背光模组上的同步信号发射器，所述3D眼镜上设置有同步信号接收器，所述同步信号接收器用于接收所述同步信号发射器发出的同步信号。具体的，所述同步信号发射器为红外信号发射器，所述同步信号接收器为红外信号接收器。\n\n[0059]具体的，当显示装置显示奇数帧图像时，同步信号发射器发射同步信号，同步信号接收器接收同步信号后控制第一镜片打开，第二镜片关闭；当显示装置显示偶数帧图像时，同步信号发射器发射同步信号，同步信号接收器接收同步信号后控制第二镜片打开，第一镜片关闭，即同步信号发射器可以同步控制3D眼镜的第一镜片、第二镜片的开和关，使双眼能够在正确的时刻看到相应画面。\n\n[0060]在其它实施例中，所述显示装置还包括与所述显示面板电连接的驱动电路板，所述驱动电路板上设置有蓝牙模块，所述3D眼镜上设置有蓝牙接收模块，即所述显示装置还可以通过蓝牙与所述3D眼镜进行同步信号的通信。\n\n[0061]综上所述，本发明实施例提供的一种3D显示系统，包括显示装置和3D眼镜，显示装置包括显示面板以及设于显示面板下方的背光模组，背光模组包括均匀分布的多个第一微发光二极管、多个第二微发光二极管以及多个第三微发光二极管；3D眼镜包括第一镜片和第二镜片，第一镜片的颜色与第一微发光二极管的出光颜色一致，第二镜片的颜色与第二微发光二极管的出光颜色或第二微发光二极管和第三微发光二极管的混合出光颜色一致；其中，第一微发光二极管与第二微发光二极管交替工作，当第二镜片的颜色与第二微发光二极管的出光颜色一致时，第三微发光二极管不工作，当第二镜片的颜色与第二微发光二极管和第三微发光二极管的混合出光颜色一致时，第三微发光二极管与第二微发光二极管同时工作。本发明通过控制背光模组上的第一微发光二极管、第二微发光二极管交替工作，第三微发光二极管不工作或与第二微发光二极管同时工作，可以在不降低显示屏分辨率的基础上实现色差式3D和快门式3D的结合使用，提高用户的3D体验效果，解决了现有技术的色差式3D显示的分辨率低以及在画面边缘观看容易产生色偏，使得观看者的3D体验效果差，并且长期观看容易造成眩晕的技术问题。\n\n[0062]以上对本发明实施例所提供的一种3D显示系统及其显示方法进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种3D显示系统及其显示方法。\n\n背景技术\n\n[0002]3D显示的种类有很多，其中一种就是色差式3D显示。色差式3D显示技术的成像原理是用两种不同的颜色将来源于两个不同视角上拍摄的影像在同一幅画面中完成印制，也可以称为分色立体成像技术。\n\n[0003]若想观看到3D效果，必须使用对应的红青、红蓝等3D眼镜观看，否则肉眼观看到的图像是重影且模糊的。以红青3D眼镜为例，红色的影像通过红色镜片(红色镜片的底色为红色，所以影像中的红色被过滤，即红色镜片只能分辨除红色之外的影像)，青色的影像通过青色镜片(青色镜片的底色为青色，所以影像中的青色被过滤，即青色镜片只能分辨除青色之外的影像)，即红青3D眼镜的两只镜片分别过滤了红色和青色这两种色彩，那么大脑便可以重叠两只眼睛看到的不同影像，从而出现3D立体效果，其缺点为分辨率低以及在画面边缘观看容易产生色偏，使得观看者的3D体验效果差，并且长期观看容易造成眩晕。故，有必要改善这一缺陷。\n\n发明内容\n\n[0004]本发明实施例提供一种3D显示系统，用于解决现有技术的色差式3D显示的分辨率低以及在画面边缘观看容易产生色偏，使得观看者的3D体验效果差，并且长期观看容易造成眩晕的技术问题。\n\n[0005]本发明实施例提供一种3D显示系统，包括显示装置和3D眼镜，所述显示装置包括显示面板以及设于所述显示面板下方的背光模组，所述背光模组包括均匀分布的多个第一微发光二极管、多个第二微发光二极管以及多个第三微发光二极管；所述3D眼镜包括第一镜片和第二镜片，所述第一镜片的颜色与所述第一微发光二极管的出光颜色一致，所述第二镜片的颜色与所述第二微发光二极管的出光颜色或所述第二微发光二极管和所述第三微发光二极管的混合出光颜色一致；其中，所述第一微发光二极管与所述第二微发光二极管交替工作，当所述第二镜片的颜色与所述第二微发光二极管的出光颜色一致时，所述第三微发光二极管不工作，当所述第二镜片的颜色与所述第二微发光二极管和所述第三微发光二极管的混合出光颜色一致时，所述第三微发光二极管与所述第二微发光二极管同时工作。\n\n[0006]在本发明实施例提供的3D显示系统中，所述第一微发光二极管、所述第二微发光二极管以及所述第三微发光二极管的出光颜色分别选自红色、绿色、蓝色中的一种。\n\n[0007]在本发明实施例提供的3D显示系统中，在奇数帧时，所述第一微发光二极管工作；在偶数帧时，所述第二微发光二极管工作或所述第三微发光二极管与所述第二微发光二极管同时工作。\n\n[0008]在本发明实施例提供的3D显示系统中，所述第一镜片和所述第二镜片均为液晶屏，且所述液晶屏能够控制为在透光状态和遮光状态之间切换。\n\n[0009]在本发明实施例提供的3D显示系统中，当所述第一微发光二极管工作时，所述第一镜片为透光状态，所述第二镜片为遮光状态；当所述第二微发光二极管工作或所述第三微发光二极管与所述第二微发光二极管同时工作时，所述第一镜片为遮光状态，所述第二镜片为透光状态。\n\n[0010]在本发明实施例提供的3D显示系统中，所述显示装置还包括设于所述背光模组上的同步信号发射器，所述3D眼镜上设置有同步信号接收器，所述同步信号接收器用于接收所述同步信号发射器发出的同步信号。\n\n[0011]在本发明实施例提供的3D显示系统中，所述显示装置还包括与所述显示面板电连接的驱动电路板，所述驱动电路板上设置有蓝牙模块，所述3D眼镜上设置有蓝牙接收模块。\n\n[0012]在本发明实施例提供的3D显示系统中，所述背光模组还包括基底、TFT阵列层以及透明胶层；所述TFT阵列层位于所述基底面向所述显示面板的一侧，所述多个第一微发光二极管、所述多个第二微发光二极管以及所述多个第三微发光二极管位于所述TFT阵列层远离所述基底的一侧，所述透明胶层位于所述基底面向所述显示面板的一侧并覆盖所述多个第一微发光二极管、所述多个第二微发光二极管以及所述多个第三微发光二极管；其中，所述TFT阵列层包括多个TFT，任一所述TFT对应驱动一个所述第一微发光二极管、或一个所述第二微发光二极管、或一个所述第三微发光二极管。\n\n[0013]本发明实施例还提供一种3D显示系统的显示方法，包括步骤：\n\n[0014]S1、提供一3D显示系统，包括显示装置和3D眼镜，所述显示装置包括显示面板以及设于所述显示面板下方的背光模组，所述背光模组包括均匀分布的多个第一微发光二极管、多个第二微发光二极管以及多个第三微发光二极管；所述3D眼镜包括第一镜片和第二镜片，所述第一镜片的颜色与所述第一微发光二极管的出光颜色一致，所述第二镜片的颜色与所述第二微发光二极管的出光颜色或所述第二微发光二极管和所述第三微发光二极管的混合出光颜色一致；\n\n[0015]S2、点亮所述第一微发光二极管；\n\n[0016]S3、当所述第二镜片的颜色与所述第二微发光二极管的出光颜色一致时，点亮所述第二微发光二极管，当所述第二镜片的颜色与所述第二微发光二极管和所述第三微发光二极管的混合出光颜色一致时，同时点亮所述第二微发光二极管和所述第三微发光二极管；\n\n[0017]S4、依次循环所述步骤S2和所述步骤S3，直至显示结束。\n\n[0018]在本发明实施例提供的3D显示系统的显示方法中，所述第一镜片和所述第二镜片均为液晶屏，且所述液晶屏能够控制为在透光状态和遮光状态之间切换。\n\n[0019]在本发明实施例提供的3D显示系统的显示方法中，所述步骤S2中，点亮所述第一微发光二极管以显示奇数帧，控制所述第一镜片为透光状态，控制所述第二镜片为遮光状态；所述步骤S3中，点亮所述第二微发光二极管或同时点亮所述第二微发光二极管和所述第三微发光二极管以显示偶数帧，控制所述第一镜片为遮光状态，控制所述第二镜片为透光状态。\n\n[0020]有益效果：本发明实施例提供的一种3D显示系统，包括显示装置和3D眼镜，显示装置包括显示面板以及设于显示面板下方的背光模组，背光模组包括均匀分布的多个第一微发光二极管、多个第二微发光二极管以及多个第三微发光二极管；3D眼镜包括第一镜片和第二镜片，第一镜片的颜色与第一微发光二极管的出光颜色一致，第二镜片的颜色与第二微发光二极管的出光颜色或第二微发光二极管和第三微发光二极管的混合出光颜色一致；其中，第一微发光二极管与第二微发光二极管交替工作，当第二镜片的颜色与第二微发光二极管的出光颜色一致时，第三微发光二极管不工作，当第二镜片的颜色与第二微发光二极管和第三微发光二极管的混合出光颜色一致时，第三微发光二极管与第二微发光二极管同时工作。本发明通过控制背光模组上的第一微发光二极管、第二微发光二极管交替工作，第三微发光二极管不工作或与第二微发光二极管同时工作，可以在不降低显示屏分辨率的基础上实现色差式3D和快门式3D的结合使用，提高用户的3D体验效果。\n\n附图说明\n\n[0021]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。\n\n[0022]图1是本发明实施例提供的3D显示系统的基本结构示意图。\n\n[0023]图2是本发明实施例提供的3D显示系统的工作时序示意图。\n\n[0024]图3是本发明实施例提供的3D显示系统的显示方法流程图。\n\n具体实施方式\n\n[0025]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。在附图中，为了清晰及便于理解和描述，附图中绘示的组件的尺寸和厚度并未按照比例。\n\n[0026]如图1所示，为本发明实施例提供的3D显示系统的基本结构示意图，所述3D显示系统包括显示装置10和3D眼镜20，所述显示装置10包括显示面板11以及设于所述显示面板11下方的背光模组12，所述背光模组12包括均匀分布的多个第一微发光二极管1231、多个第二微发光二极管1232以及多个第三微发光二极管1233；所述3D眼镜20包括第一镜片201和第二镜片202，所述第一镜片201的颜色与所述第一微发光二极管1231的出光颜色一致，所述第二镜片202的颜色与所述第二微发光二极管1232的出光颜色或所述第二微发光二极管1232和所述第三微发光二极管1233的混合出光颜色一致。\n\n[0027]其中，所述第一微发光二极管1231与所述第二微发光二极管1232交替工作，当所述第二镜片202的颜色与所述第二微发光二极管1232的出光颜色一致时，所述第三微发光二极管1233不工作，当所述第二镜片202的颜色与所述第二微发光二极管1232和所述第三微发光二极管1233的混合出光颜色一致时，所述第三微发光二极管1233与所述第二微发光二极管1232同时工作。\n\n[0028]可以理解的是，本发明提供的3D显示系统是通过控制背光模组12上的第一微发光二极管1231、第二微发光二极管1232以及第三微发光二极管1233分时工作来提供不同颜色的背光。具体的，有以下两种情况：第一种情况是第一微发光二极管1231与第二微发光二极管1232交替工作，且第三微发光二极管1233不工作，则显示面板11上显示的图像是分别由第一微发光二极管1231和第二微发光二极管1232的出光颜色来决定的，当第一微发光二极管1231工作时，通过第一镜片201能分辨除第一微发光二极管1231的出光颜色之外的颜色，即通过第一镜片201能看到由第一微发光二极管1231激发的图像；当第二微发光二极管1232工作时，通过第二镜片202能分辨除第二微发光二极管1232的出光颜色之外的颜色，即通过第二镜片202能看到由第二微发光二极管1232激发的图像，当显示面板11的刷新率大于或等于120赫兹时，由于双眼的视差以及视觉暂留效应，两幅图像在大脑中合成一幅具有景深的图像，即可以看到3D立体效果，即实现了色差式3D和快门式3D的结合，由于第一微发光二极管1231、第二微发光二极管1232均匀的分布在显示面板11的下方，因此，无论从中间区域还是边缘区域观看，都不会产生色偏，提高了用户的3D体验效果。\n\n[0029]第二种情况是第一微发光二极管1231与第二微发光二极管1232交替工作，且第三微发光二极管1233与第二微发光二极管1232同时工作，则显示面板11上显示的图像是分别由第一微发光二极管1231的出光颜色、第二微发光二极管1232和第三微发光二极管1233的混合出光颜色来决定的，当第一微发光二极管1231工作时，第一镜片201能分辨除第一微发光二极管1231的出光颜色之外的颜色，即通过第一镜片201能看到由第一微发光二极管1231激发的图像；当第二微发光二极管1232和第三微发光二极管1233同时工作时，第二镜片202能分辨除第二微发光二极管1232和第三微发光二极管1233的混合出光颜色之外的颜色，即通过第二镜片202能看到由第二微发光二极管1232和第三微发光二极管1233共同激发的图像，其显示原理与第一种情况类似，此处不再赘述。\n\n[0030]在一种实施例中，第一微发光二极管1231、第二微发光二极管1232以及第三微发光二极管1233的出光颜色分别选自红色、绿色、蓝色中的一种。可以理解的是，由于第一微发光二极管1231、第二微发光二极管1232、第三微发光二极管1233的出光颜色各不相同，当第一微发光二极管1231为红色、第二微发光二极管1232为绿色时，第三微发光二极管1233则为蓝色，在其它实施例中，第一微发光二极管1231、第二微发光二极管1232、第三微发光二极管1233还可以分别为红色、蓝色、绿色；绿色、红色、蓝色；绿色、蓝色、红色；蓝色、红色、绿色；蓝色、绿色、红色。\n\n[0031]本发明实施例以第一微发光二极管1231、第二微发光二极管1232、第三微发光二极管1233分别为红色、蓝色、绿色为例进行说明，其它类似情况不进行赘述。可以理解的是，当第一微发光二极管1231、第二微发光二极管1232、第三微发光二极管1233分别为红色、蓝色、绿色时，第一镜片201的颜色为红色，第二镜片202的颜色为蓝色或青色(即蓝色和绿色的混合色)。\n\n[0032]在一种实施例中，背光模组12还包括基底121、TFT阵列层122以及透明胶层124；所述TFT阵列层122位于所述基底121面向所述显示面板11的一侧，所述多个第一微发光二极管1231、所述多个第二微发光二极管1232以及所述多个第三微发光二极管1233位于所述TFT阵列层122远离所述基底121的一侧，所述透明胶层124位于所述基底121面向所述显示面板11的一侧并覆盖所述多个第一微发光二极管1231、所述多个第二微发光二极管1232以及所述多个第三微发光二极管1233。\n\n[0033]其中，所述TFT阵列层122包括多个TFT，任一所述TFT对应驱动一个所述第一微发光二极管1231、或一个所述第二微发光二极管1232、或一个所述第三微发光二极管1233，即第一微发光二极管1231、第二微发光二极管1232以及第三微发光二极管1233均为主动发光，可以通过外围驱动电路分别控制第一微发光二极管1231、第二微发光二极管1232以及第三微发光二极管1233的开启和关闭。其中，所述透明胶层124用于保护第一微发光二极管1231、第二微发光二极管1232以及第三微发光二极管1233，以提高显示装置10的使用寿命。\n\n[0034]在一种实施例中，显示面板11包括阵列基板111、彩膜基板113以及夹设于阵列基板111和彩膜基板113之间的液晶分子层112，其中，彩膜基板113上设有多个彩色色阻，包括多个红色色阻1131、多个蓝色色阻1132以及多个绿色色阻1133。\n\n[0035]在一种实施例中，在奇数帧时，第一微发光二极管1231工作；在偶数帧时，第二微发光二极管1232工作或第三微发光二极管1233与第二微发光二极管1232同时工作。需要说明的是，上述的奇数帧和偶数帧可以互换，即另一种实施方式为：在偶数帧时，第一微发光二极管1231工作；在奇数帧时，第二微发光二极管1232工作或第三微发光二极管1233与第二微发光二极管1232同时工作。可以理解的是，本发明实施例通过把图像按帧一分为二，即把图像分为奇数帧和偶数帧，形成对应左眼和右眼的两组画面，连续交错显示出来，能够保持画面的原始分辨率，很轻松地让用户感受3D效果，而且不会造成画面亮度降低。\n\n[0036]具体的，奇数帧和偶数帧时显示的图像是将原始2D下的画面一分为二，按帧通过景深处理为对应于左右眼的两幅画面，当播放3D片源时，对应左右眼的画面会交替连续的播放，大脑综合处理左右眼视网膜上所成的图像从而可以产生3D立体效果。\n\n[0037]在一种实施例中，第一镜片201和第二镜片202均为液晶屏，且所述液晶屏能够控制为在透光状态和遮光状态之间切换。具体的，第一镜片201和第二镜片202由仅有开与关两种状态的液晶屏构成，不通电时镜片打开可以透过光线，通电时镜片关闭无光线透过。需要说明的是，本发明可以通过提高3D眼镜的液晶响应时间，从而增加镜片打开的稳态时间，则背光的打开时间就可以适当增加，使得佩戴3D眼镜观看图像的亮度有所提高，从而提升用户的3D体验效果。在其它实施例中，所述第一镜片201和所述第二镜片202也可以为被动式的滤色3D眼镜。\n\n[0038]在一种实施例中，当第一微发光二极管1231工作时，第一镜片201为透光状态，第二镜片202为遮光状态；当第二微发光二极管1232工作或第三微发光二极管1233与第二微发光二极管1232同时工作时，第一镜片201为遮光状态，第二镜片202为透光状态。\n\n[0039]可以理解的是，第一镜片201对应接收第一微发光二极管1231激发的图像，而第一微发光二极管1231对应激发奇数帧的图像，即奇数帧时，显示面板11显示奇数帧对应的图像，同时背光模组12中的第一微发光二极管1231亮起，相应的3D眼镜20中的第一镜片201的液晶屏打开，第二镜片202的液晶屏关闭，相应的左眼接受奇数帧的画面影像。\n\n[0040]可以理解的是，第二镜片202对应接收第二微发光二极管1232激发的图像或第二微发光二极管1232和第三微发光二极管1233共同激发的图像，而第二微发光二极管1232或第二微发光二极管1232和第三微发光二极管1233对应激发偶数帧的图像，即偶数帧时，显示面板11显示偶数帧对应的图像，同时背光模组12中的第二微发光二极管1232亮起、或第二微发光二极管1232和第三微发光二极管1233同时亮起，相应的3D眼镜20中的第二镜片202的液晶屏打开，第一镜片201的液晶屏关闭，相应的右眼接受偶数帧的画面影像。\n\n[0041]在一种实施例中，所述显示装置10还包括设于所述背光模组12上的同步信号发射器(图未示)，所述3D眼镜20上设置有同步信号接收器(图未示)，所述同步信号接收器用于接收所述同步信号发射器发出的同步信号。具体的，所述同步信号发射器为红外信号发射器，所述同步信号接收器为红外信号接收器。\n\n[0042]具体的，当显示装置10显示奇数帧图像时，同步信号发射器发射同步信号，同步信号接收器接收同步信号后控制第一镜片201打开，第二镜片202关闭；当显示装置10显示偶数帧图像时，同步信号发射器发射同步信号，同步信号接收器接收同步信号后控制第二镜片202打开，第一镜片201关闭，即同步信号发射器可以同步控制3D眼镜20的第一镜片201、第二镜片202的开和关，使双眼能够在正确的时刻看到相应画面。\n\n[0043]在其它实施例中，所述显示装置10还包括与所述显示面板11电连接的驱动电路板(图未示)，所述驱动电路板上设置有蓝牙模块(图未示)，所述3D眼镜20上设置有蓝牙接收模块(图未示)，即所述显示装置10还可以通过蓝牙与所述3D眼镜20进行同步信号的通信。\n\n[0044]接下来，请参阅图2，为本发明实施例提供的3D显示系统的工作时序示意图，当显示装置的刷新率为120赫兹时，每1/120秒切换一次，奇数帧时，显示左眼对应的图像(L)，与此同时，3D眼镜的左眼镜片打开，右眼镜片关闭；偶数帧时，显示右眼对应的图像(R)，与此同此，3D眼镜的左眼镜片关闭，右眼镜片打开，以实现在正确的时刻观看到正确的图像画面。需要说明的是，此处的奇数帧和偶数帧也可以互换。\n\n[0045]接下来，请参阅图3，为本发明实施例提供的3D显示系统的显示方法流程图，所述显示方法包括步骤：\n\n[0046]S1、提供一3D显示系统，包括显示装置和3D眼镜，所述显示装置包括显示面板以及设于所述显示面板下方的背光模组，所述背光模组包括均匀分布的多个第一微发光二极管、多个第二微发光二极管以及多个第三微发光二极管；所述3D眼镜包括第一镜片和第二镜片，所述第一镜片的颜色与所述第一微发光二极管的出光颜色一致，所述第二镜片的颜色与所述第二微发光二极管的出光颜色或所述第二微发光二极管和所述第三微发光二极管的混合出光颜色一致；\n\n[0047]S2、点亮所述第一微发光二极管；\n\n[0048]S3、当所述第二镜片的颜色与所述第二微发光二极管的出光颜色一致时，点亮所述第二微发光二极管，当所述第二镜片的颜色与所述第二微发光二极管和所述第三微发光二极管的混合出光颜色一致时，同时点亮所述第二微发光二极管和所述第三微发光二极管；\n\n[0049]S4、依次循环所述步骤S2和所述步骤S3，直至显示结束。\n\n[0050]需要说明的是，上述步骤S2和步骤S3的顺序可以互换，即也可以先点亮第二微发光二极管或先同时点亮第二微发光二极管和第三微发光二极管，后点亮第一微发光二极管。\n\n[0051]可以理解的是，本发明实施例提供的3D显示系统的显示方法是通过控制背光模组上的第一微发光二极管、第二微发光二极管以及第三微发光二极管分时点亮来提供不同颜色的背光。具体的，有以下两种情况：第一种情况是第二镜片的颜色与第二微发光二极管的出光颜色一致，则显示面板上显示的图像是分别由第一微发光二极管和第二微发光二极管的出光颜色来决定的，当第一微发光二极管被点亮时，通过第一镜片能分辨除第一微发光二极管的出光颜色之外的颜色，即通过第一镜片能看到由第一微发光二极管激发的图像；当第二微发光二极管被点亮时，通过第二镜片能分辨除第二微发光二极管的出光颜色之外的颜色，即通过第二镜片能看到由第二微发光二极管激发的图像，当显示面板的刷新率大于或等于120赫兹时，由于双眼的视差以及视觉暂留效应，两幅图像在大脑中合成一幅具有景深的图像，即可以看到3D立体效果，即实现了色差式3D和快门式3D的结合，由于第一微发光二极管、第二微发光二极管均匀的分布在显示面板的下方，因此，无论从中间区域还是边缘区域观看，都不会产生色偏，提高了用户的3D体验效果。\n\n[0052]第二种情况是第二镜片的颜色与第二微发光二极管和第三微发光二极管的混合出光颜色一致，则显示面板上显示的图像是分别由第一微发光二极管的出光颜色、第二微发光二极管和第三微发光二极管的混合出光颜色来决定的，当第一微发光二极管被点亮时，第一镜片能分辨除第一微发光二极管的出光颜色之外的颜色，即通过第一镜片能看到由第一微发光二极管激发的图像；当第二微发光二极管和第三微发光二极管同时被点亮时，第二镜片能分辨除第二微发光二极管和第三微发光二极管的混合出光颜色之外的颜色，即通过第二镜片能看到由第二微发光二极管和第三微发光二极管共同激发的图像，其显示原理与第一种情况类似，此处不再赘述。\n\n[0053]在本实施例中，第一微发光二极管、第二微发光二极管以及第三微发光二极管的出光颜色分别选自红色、绿色、蓝色中的一种。可以理解的是，由于第一微发光二极管、第二微发光二极管以及第三微发光二极管的出光颜色各不相同，当第一微发光二极管为红色、第二微发光二极管为绿色时，第三微发光二极管则为蓝色，在其它实施例中，第一微发光二极管、第二微发光二极管以及第三微发光二极管还可以分别为红色、蓝色、绿色；绿色、红色、蓝色；绿色、蓝色、红色；蓝色、红色、绿色；蓝色、绿色、红色。\n\n[0054]在本实施例中，所述第一镜片和所述第二镜片均为液晶屏，且所述液晶屏能够控制为在透光状态和遮光状态之间切换。具体的，第一镜片和第二镜片由仅有开与关两种状态的液晶屏构成，不通电时镜片打开可以透过光线，通电时镜片关闭无光线透过。在其他实施例中，所述第一镜片和所述第二镜片也可以为被动式的滤色3D眼镜。\n\n[0055]在本实施例中，所述步骤S2中，点亮所述第一微发光二极管以显示奇数帧，控制所述第一镜片为透光状态，控制所述第二镜片为遮光状态；所述步骤S3中，点亮所述第二微发光二极管或同时点亮所述第二微发光二极管和所述第三微发光二极管以显示偶数帧，控制所述第一镜片为遮光状态，控制所述第二镜片为透光状态。\n\n[0056]可以理解的是，第一镜片对应接收第一微发光二极管激发的图像，而第一微发光二极管对应激发奇数帧的图像，即奇数帧时，显示面板显示奇数帧对应的图像，同时背光模组中的第一微发光二极管点亮，相应的3D眼镜中的第一镜片的液晶屏打开，第二镜片的液晶屏关闭，相应的左眼接受奇数帧的画面影像。\n\n[0057]可以理解的是，第二镜片对应接收第二微发光二极管激发的图像或第二微发光二极管和第三微发光二极管共同激发的图像，而第二微发光二极管或第二微发光二极管和第三微发光二极管对应激发偶数帧的图像，即偶数帧时，显示面板显示偶数帧对应的图像，同时背光模组中的第二微发光二极管点亮、或第二微发光二极管和第三微发光二极管同时点亮，相应的3D眼镜中的第二镜片的液晶屏打开，第一镜片的液晶屏关闭，相应的右眼接受偶数帧的画面影像。\n\n[0058]在一种实施例中，所述显示装置还包括设于所述背光模组上的同步信号发射器，所述3D眼镜上设置有同步信号接收器，所述同步信号接收器用于接收所述同步信号发射器发出的同步信号。具体的，所述同步信号发射器为红外信号发射器，所述同步信号接收器为红外信号接收器。\n\n[0059]具体的，当显示装置显示奇数帧图像时，同步信号发射器发射同步信号，同步信号接收器接收同步信号后控制第一镜片打开，第二镜片关闭；当显示装置显示偶数帧图像时，同步信号发射器发射同步信号，同步信号接收器接收同步信号后控制第二镜片打开，第一镜片关闭，即同步信号发射器可以同步控制3D眼镜的第一镜片、第二镜片的开和关，使双眼能够在正确的时刻看到相应画面。\n\n[0060]在其它实施例中，所述显示装置还包括与所述显示面板电连接的驱动电路板，所述驱动电路板上设置有蓝牙模块，所述3D眼镜上设置有蓝牙接收模块，即所述显示装置还可以通过蓝牙与所述3D眼镜进行同步信号的通信。\n\n[0061]综上所述，本发明实施例提供的一种3D显示系统，包括显示装置和3D眼镜，显示装置包括显示面板以及设于显示面板下方的背光模组，背光模组包括均匀分布的多个第一微发光二极管、多个第二微发光二极管以及多个第三微发光二极管；3D眼镜包括第一镜片和第二镜片，第一镜片的颜色与第一微发光二极管的出光颜色一致，第二镜片的颜色与第二微发光二极管的出光颜色或第二微发光二极管和第三微发光二极管的混合出光颜色一致；其中，第一微发光二极管与第二微发光二极管交替工作，当第二镜片的颜色与第二微发光二极管的出光颜色一致时，第三微发光二极管不工作，当第二镜片的颜色与第二微发光二极管和第三微发光二极管的混合出光颜色一致时，第三微发光二极管与第二微发光二极管同时工作。本发明通过控制背光模组上的第一微发光二极管、第二微发光二极管交替工作，第三微发光二极管不工作或与第二微发光二极管同时工作，可以在不降低显示屏分辨率的基础上实现色差式3D和快门式3D的结合使用，提高用户的3D体验效果，解决了现有技术的色差式3D显示的分辨率低以及在画面边缘观看容易产生色偏，使得观看者的3D体验效果差，并且长期观看容易造成眩晕的技术问题。\n\n[0062]以上对本发明实施例所提供的一种3D显示系统及其显示方法进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。');
INSERT INTO `os_patent_instruction_text` VALUES (10962, 24016, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种背光模组及其制备方法、显示装置。\n\n背景技术\n\n[0002]随着显示技术的不断发展，液晶显示产品已广泛的应用在日常生活的各个层面中，对液晶显示产品的薄型化、轻量化的要求也逐步提高。然而，由于背光模组由多层光学膜片组成，不仅组装工序复杂，且难以实现薄型化和轻量化。故，有必要改善这一缺陷。\n\n发明内容\n\n[0003]本发明实施例提供一种背光模组，用于解决现有技术的背光模组的组装工序复杂以及难以实现薄型化和轻量化的技术问题。\n\n[0004]本发明实施例提供一种背光模组，包括基板、位于所述基板的一侧表面的介质层、位于所述介质层远离所述基板的一侧表面的棱镜层、位于所述棱镜层远离所述介质层的一侧表面的第一扩散层、位于所述第一扩散层远离所述棱镜层的一侧表面且阵列分布的多个发光二极管组件以及位于所述多个发光二极管组件远离所述第一扩散层的一侧的反射层；其中，所述介质层远离所述基板的一侧表面形成有棱镜结构，所述棱镜层覆盖所述棱镜结构。\n\n[0005]在本发明实施例提供的背光模组中，所述背光模组还包括第二扩散层，所述第二扩散层设置于所述第一扩散层远离所述棱镜层的一侧表面且覆盖所述多个发光二极管组件，所述反射层位于所述第二扩散层远离所述第一扩散层的一侧表面。\n\n[0006]在本发明实施例提供的背光模组中，所述第一扩散层的内部填充有扩散粒子或所述第一扩散层的表面设置有扩散微结构；所述第二扩散层的内部填充有扩散粒子或所述第二扩散层的表面设置有扩散微结构。\n\n[0007]在本发明实施例提供的背光模组中，所述棱镜层的折射率大于或等于所述基板的折射率，且所述基板的折射率大于所述介质层的折射率。\n\n[0008]在本发明实施例提供的背光模组中，任一所述发光二极管组件包括位于所述第一扩散层远离所述棱镜层的一侧表面的透明电极以及位于所述透明电极远离所述第一扩散层的一侧表面的发光二极管。\n\n[0009]在本发明实施例提供的背光模组中，所述透明电极的材料为氧化铟锡或纳米银。\n\n[0010]本发明实施例提供一种背光模组的制备方法，包括步骤：S1、提供一基板；S2、在所述基板的一侧表面制备介质层；S3、在所述介质层远离所述基板的一侧表面制备棱镜结构；S4、在所述介质层远离所述基板的一侧表面制备棱镜层，所述棱镜层覆盖所述棱镜结构；S5、在所述棱镜层远离所述介质层的一侧表面制备第一扩散层；S6、在所述第一扩散层远离所述棱镜层的一侧表面制备多个阵列分布的发光二极管组件；S7、在所述多个发光二极管组件远离所述第一扩散层的一侧制备反射层。\n\n[0011]在本发明实施例提供的背光模组的制备方法中，所述步骤S6和所述步骤S7之间还包括步骤：S601、在所述第一扩散层远离所述棱镜层的一侧表面制备第二扩散层，所述第二扩散层覆盖所述多个发光二极管组件。\n\n[0012]本发明实施例还提供一种显示装置，包括显示面板、位于所述显示面板的一侧的第一偏光层、位于所述显示面板的另一侧的第二偏光层以及位于所述第一偏光层远离所述显示面板的一侧表面的背光模组；所述背光模组包括位于所述第一偏光层远离所述显示面板的一侧表面的介质层、位于所述介质层远离所述第一偏光层的一侧表面的棱镜层、位于所述棱镜层远离所述介质层的一侧表面的第一扩散层、位于所述第一扩散层远离所述棱镜层的一侧表面且阵列分布的多个发光二极管组件以及位于所述多个发光二极管组件远离所述第一扩散层的一侧的反射层；其中，所述介质层远离所述第一偏光层的一侧表面形成有棱镜结构，所述棱镜层覆盖所述棱镜结构。\n\n[0013]在本发明实施例提供的显示装置中，所述显示装置还包括第二扩散层，所述第二扩散层设置于所述第一扩散层远离所述棱镜层的一侧表面且覆盖所述多个发光二极管组件，所述反射层位于所述第二扩散层远离所述第一扩散层的一侧表面。\n\n[0014]有益效果：本发明实施例提供的一种背光模组，包括基板、位于所述基板的一侧表面的介质层、位于所述介质层远离所述基板的一侧表面的棱镜层、位于所述棱镜层远离所述介质层的一侧表面的第一扩散层、位于所述第一扩散层远离所述棱镜层的一侧表面且阵列分布的多个发光二极管组件以及位于所述多个发光二极管组件远离所述第一扩散层的一侧的反射层；其中，所述介质层远离所述基板的一侧表面形成有棱镜结构，所述棱镜层覆盖所述棱镜结构。本发明通过将介质层、棱镜层、第一扩散层、多个发光二极管组件以及反射层均集成在一张基板上，不需要一层一层的组装，简化了背光模组的组装工序，而且每一层之间都是紧密相连，不存在空隙，也不需要额外增设光学胶粘连，可使得背光模组的厚度得以减薄，实现薄型化和轻量化。\n\n附图说明\n\n[0015]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。\n\n[0016]图1是本发明实施例提供的背光模组的基本结构示意图。\n\n[0017]图2是本发明实施例提供的背光模组的制备方法流程图。\n\n[0018]图3是本发明实施例提供的显示装置的基本结构示意图。\n\n具体实施方式\n\n[0019]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。在附图中，为了清晰及便于理解和描述，附图中绘示的组件的尺寸和厚度并未按照比例。\n\n[0020]如图1所示，为本发明实施例提供的背光模组的基本结构示意图，所述背光模组包括基板101、位于所述基板101的一侧表面的介质层102、位于所述介质层102远离所述基板101的一侧表面的棱镜层103、位于所述棱镜层103远离所述介质层102的一侧表面的第一扩散层104、位于所述第一扩散层104远离所述棱镜层103的一侧表面且阵列分布的多个发光二极管组件105以及位于所述多个发光二极管组件105远离所述第一扩散层104的一侧的反射层106；其中，所述介质层102远离所述基板101的一侧表面形成有棱镜结构107，所述棱镜层103覆盖所述棱镜结构107。\n\n[0021]可以理解的是，所述多个发光二极管组件105发出的光为点状光源，需要通过所述第一扩散层104将点状光源柔化为面光源，并遮蔽灯影，所述棱镜层103将从所述第一扩散层104中入射来的光线进一步汇聚，从而提升正面亮度，所述反射层106的主要作用是把所述多个发光二极管组件105向下的出射光反射至所述第一扩散层104中，以提高光源的利用率。\n\n[0022]现有技术中的反射层、发光二极管组件、扩散层以及棱镜层均是通过光学胶粘连，或直接堆叠(即各个膜层之间还存在空气层，且容易松动、移位)，组装工序比较复杂，难以实现薄型化和轻量化。本发明通过在基板101上设置具有棱镜结构107的介质层102，将棱镜层103直接形成于介质层102具有棱镜结构107的一侧表面，棱镜层103通过填充棱镜结构107以形成棱镜，并且将第一扩散层104、多个发光二极管组件105以及反射层106也集成在基板101上，不需要一层一层的组装，简化了背光模组的组装工序，而且每一层之间都是紧密相连，不存在空隙，也不需要额外增设光学胶粘连，可使得背光模组的厚度得以减薄，实现薄型化和轻量化。\n\n[0023]在一种实施例中，所述背光模组还包括第二扩散层108，所述第二扩散层108设置于所述第一扩散层104远离所述棱镜层103的一侧表面且覆盖所述多个发光二极管组件105，所述反射层106位于所述第二扩散层108远离所述第一扩散层104的一侧表面。可以理解的是，本发明通过在多个发光二极管组件105与反射层106之间设置第二扩散层108，增加了所述多个发光二极管组件105向下的出射光的扩散路径，使得所述多个发光二极管组件105的出射光被均匀的扩散，使得混光更均匀。\n\n[0024]在其他实施例中，所述多个发光二极管组件105与所述反射层106之间也可以设置一层透明硅胶，以实现对所述多个发光二极管组件105的保护，也可以增加所述多个发光二极管组件105向下的出射光的扩散路径，使得混光更均匀。\n\n[0025]在一种实施例中，所述第一扩散层104的内部填充有扩散粒子或所述第一扩散层104的表面设置有扩散微结构；所述第二扩散层108的内部填充有扩散粒子或所述第二扩散层108的表面设置有扩散微结构。所述第一扩散层104和所述第二扩散层108都是为了使所述多个发光二极管组件105的出射光充分散射，实现光源更柔和、更均匀。本发明实施例通过在所述第一扩散层104和所述第二扩散层108的内部添加无机或有机的光散射粒子，或者对所述第一扩散层104和所述第二扩散层108的表面进行处理，以形成扩散微结构，使所述多个发光二极管组件105的出射光发生不同方向的折射、反射和散射，从而改变所述多个发光二极管组件105的出射光的传播路线，实现充分扩散的效果。而且，通过改变扩散微结构的形状和排布，可以调整扩散角度和光场的分布，使出射光具有更好的视角特性和亮度均匀性。\n\n[0026]在一种实施例中，所述棱镜层103的折射率大于或等于所述基板101的折射率，且所述基板101的折射率大于所述介质层102的折射率。可以理解的是，由于所述棱镜层103的折射率大于所述介质层102的折射率，当光线从所述棱镜层103射向所述介质层102时，当入射角大于临界角时，会发生全反射，此时全反射回来的光线经反射层106反射又经所述棱镜层103汇聚，从而可以提升光线向上的亮度，提高光源利用率。且所述基板101的折射率大于所述介质层102的折射率，从而可以减少由所述介质层102射向所述基板101的光线的全反射，进一步提升了光线向上的亮度，提高了光源利用率。\n\n[0027]在一种实施例中，任一所述发光二极管组件105包括位于所述第一扩散层104远离所述棱镜层103的一侧表面的透明电极1051以及位于所述透明电极1051远离所述第一扩散层104的一侧表面的发光二极管1052。可以理解的是，由于所述背光模组的各个膜层是沉积在所述基板101上，因此，需先制备透明电极1051的图案，再进行发光二极管1052绑定。在一种实施例中，所述透明电极1051的材料为氧化铟锡或纳米银，所述发光二极管1052包括红色发光二极管、绿色发光二极管以及蓝色发光二极管，或所述发光二极管1052均为蓝色发光二极管。\n\n[0028]接下来，请参阅图2，为本发明实施例提供的背光模组的制备方法流程图，所述制备方法包括步骤：\n\n[0029]S1、提供一基板；\n\n[0030]S2、在所述基板的一侧表面制备介质层；\n\n[0031]S3、在所述介质层远离所述基板的一侧表面制备棱镜结构；\n\n[0032]S4、在所述介质层远离所述基板的一侧表面制备棱镜层，所述棱镜层覆盖所述棱镜结构；\n\n[0033]S5、在所述棱镜层远离所述介质层的一侧表面制备第一扩散层；\n\n[0034]S6、在所述第一扩散层远离所述棱镜层的一侧表面制备多个阵列分布的发光二极管组件；\n\n[0035]S7、在所述多个发光二极管组件远离所述第一扩散层的一侧制备反射层。\n\n[0036]可以理解的是，本发明通过在基板上制备介质层，在介质层远离基板的一侧表面通过压印工艺形成棱镜结构，将棱镜层直接形成于介质层具有棱镜结构的一侧表面，棱镜层通过填充棱镜结构以形成棱镜，并且将第一扩散层、多个发光二极管组件以及反射层也集成在基板上，不需要一层一层的组装，简化了背光模组的组装工序，而且每一层之间都是紧密相连，不存在空隙，也不需要额外增设光学胶粘连，可使得背光模组的厚度得以减薄，实现薄型化和轻量化。\n\n[0037]在一种实施例中，所述步骤S6和所述步骤S7之间还包括步骤：S601、在所述第一扩散层远离所述棱镜层的一侧表面制备第二扩散层，所述第二扩散层覆盖所述多个发光二极管组件。可以理解的是，本发明通过在多个发光二极管组件与反射层之间增加第二扩散层，增加了所述多个发光二极管组件向下的出射光的扩散路径，使得所述多个发光二极管组件的出射光被均匀的扩散，使得混光更均匀。\n\n[0038]在一种实施例中，所述第一扩散层的内部填充有扩散粒子或所述第一扩散层的表面设置有扩散微结构；所述第二扩散层的内部填充有扩散粒子或所述第二扩散层的表面设置有扩散微结构。在一种实施例中，所述第二扩散层的材料和制备工艺与所述第一扩散层相同。\n\n[0039]可以理解的是，所述第一扩散层和所述第二扩散层都是为了使所述多个发光二极管组件的出射光充分散射，实现光源更柔和、更均匀。本发明实施例通过在所述第一扩散层和所述第二扩散层的内部添加无机或有机的光散射粒子，或者对所述第一扩散层和所述第二扩散层的表面通过压印工艺以形成扩散微结构，使所述多个发光二极管组件的出射光发生不同方向的折射、反射和散射，从而改变所述多个发光二极管组件的出射光的传播路线，实现充分扩散的效果。而且，通过改变扩散微结构的形状和排布，可以调整扩散角度和光场的分布，使出射光具有更好的视角特性和亮度均匀性。\n\n[0040]在一种实施例中，任一所述发光二极管组件包括位于所述第一扩散层远离所述棱镜层的一侧表面的透明电极以及位于所述透明电极远离所述第一扩散层的一侧表面的发光二极管。可以理解的是，由于所述背光模组的各个膜层是依次沉积在所述基板上，因此，需先通过丝网印刷或成膜、曝光、刻蚀工艺制备透明电极的图案，再进行发光二极管绑定。在一种实施例中，所述透明电极的材料为氧化铟锡或纳米银，所述发光二极管包括红色发光二极管、绿色发光二极管以及蓝色发光二极管，或所述发光二极管均为蓝色发光二极管。\n\n[0041]需要说明的是，本发明实施例提供的背光模组，可以直接通过光学胶将所述基板远离所述介质层的一侧与显示面板粘合固定。也可以将所述基板剥离，将所述介质层远离所述棱镜层的一侧通过光学胶与显示面板粘合固定。在其他实施例中，也可以不需要设置基板，直接将显示面板两侧的偏光片贴附完成后，在显示面板的下偏光片远离显示面板的一侧表面依次沉积介质层、棱镜层、第一扩散层、透明电极图案，然后绑定发光二极管，最后制备反射层，以完成显示装置的制备。\n\n[0042]具体的，请参阅图3，为本发明实施例提供的显示装置的基本结构示意图，所述显示装置包括显示面板20、位于所述显示面板20的一侧的第一偏光层30、位于所述显示面板20的另一侧的第二偏光层40以及位于所述第一偏光层30远离所述显示面板20的一侧表面的背光模组10。\n\n[0043]所述背光模组10包括位于所述第一偏光层30远离所述显示面板20的一侧表面的介质层102、位于所述介质层102远离所述第一偏光层30的一侧表面的棱镜层103、位于所述棱镜层103远离所述介质层102的一侧表面的第一扩散层104、位于所述第一扩散层104远离所述棱镜层103的一侧表面且阵列分布的多个发光二极管组件105以及位于所述多个发光二极管组件105远离所述第一扩散层104的一侧的反射层106；其中，所述介质层102远离所述第一偏光层30的一侧表面形成有棱镜结构107，所述棱镜层103覆盖所述棱镜结构107。\n\n[0044]可以理解的是，本发明通过在第一偏光层30远离显示面板20的一侧表面设置具有棱镜结构107的介质层102，将棱镜层103直接形成于介质层102具有棱镜结构107的一侧表面，棱镜层103通过填充棱镜结构107以形成棱镜，并且将第一扩散层104、多个发光二极管组件105以及反射层106也集成在第一偏光层30远离显示面板20的一侧，不需要一层一层的组装，简化了背光模组10的组装工序，而且每一层之间都是紧密相连，不存在空隙，也不需要额外增设光学胶粘连，可使得背光模组10的厚度得以减薄，使得显示装置整体实现薄型化和轻量化。\n\n[0045]在一种实施例中，所述显示装置还包括第二扩散层108，所述第二扩散层108设置于所述第一扩散层104远离所述棱镜层103的一侧表面且覆盖所述多个发光二极管组件105，所述反射层106位于所述第二扩散层108远离所述第一扩散层104的一侧表面。可以理解的是，本发明通过在多个发光二极管组件105与反射层106之间设置第二扩散层108，增加了所述多个发光二极管组件105向下的出射光的扩散路径，使得所述多个发光二极管组件105的出射光被均匀的扩散，使得混光更均匀。\n\n[0046]在其他实施例中，所述多个发光二极管组件105与所述反射层106之间也可以设置一层透明硅胶，以实现对所述多个发光二极管组件105的保护，也可以增加所述多个发光二极管组件105向下的出射光的扩散路径，使得混光更均匀。\n\n[0047]在一种实施例中，任一所述发光二极管组件105包括位于所述第一扩散层104远离所述棱镜层103的一侧表面的透明电极1051以及位于所述透明电极1051远离所述第一扩散层104的一侧表面的发光二极管1052。可以理解的是，由于所述背光模组的各个膜层是沉积在第一偏光层30远离显示面板20的一侧表面，因此，需先制备透明电极1051的图案，再进行发光二极管1052绑定。在一种实施例中，所述透明电极1051的材料为氧化铟锡或纳米银，所述发光二极管1052包括红色发光二极管、绿色发光二极管以及蓝色发光二极管，或所述发光二极管1052均为蓝色发光二极管。\n\n[0048]在一种实施例中，所述显示面板20包括相对设置的第一基板201和第二基板202以及夹设于所述第一基板201和所述第二基板202之间的液晶分子203，所述液晶分子203通过框胶50密封。\n\n[0049]在一种实施例中，所述第一偏光层30为第一金属线栅，是通过在显示面板20的一侧表面成膜、纳米压印及刻蚀工艺制作而成。所述第二偏光层40制备于显示面板20的另一侧，所述第二偏光层40可以为与所述第一金属线栅正交的第二金属线栅，或为与所述第一金属线栅正交的偏光片。\n\n[0050]可以理解的是，后续完成柔性电路板绑定及驱动芯片绑定等模组工艺，即可完成显示装置的制备。本发明实施例提供的显示装置可以为：手机、平板电脑、笔记本电脑、数码相机、导航仪等具有显示功能的产品或部件。\n\n[0051]综上所述，本发明实施例提供的一种背光模组，包括基板、位于所述基板的一侧表面的介质层、位于所述介质层远离所述基板的一侧表面的棱镜层、位于所述棱镜层远离所述介质层的一侧表面的第一扩散层、位于所述第一扩散层远离所述棱镜层的一侧表面且阵列分布的多个发光二极管组件以及位于所述多个发光二极管组件远离所述第一扩散层的一侧的反射层；其中，所述介质层远离所述基板的一侧表面形成有棱镜结构，所述棱镜层覆盖所述棱镜结构。本发明通过将介质层、棱镜层、第一扩散层、多个发光二极管组件以及反射层均集成在一张基板上，不需要一层一层的组装，简化了背光模组的组装工序，而且每一层之间都是紧密相连，不存在空隙，也不需要额外增设光学胶粘连，可使得背光模组的厚度得以减薄，实现薄型化和轻量化，解决了现有技术的背光模组的组装工序复杂以及难以实现薄型化和轻量化的技术问题。\n\n[0052]以上对本发明实施例所提供的一种背光模组及其制备方法、显示装置进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种背光模组及其制备方法、显示装置。\n\n背景技术\n\n[0002]随着显示技术的不断发展，液晶显示产品已广泛的应用在日常生活的各个层面中，对液晶显示产品的薄型化、轻量化的要求也逐步提高。然而，由于背光模组由多层光学膜片组成，不仅组装工序复杂，且难以实现薄型化和轻量化。故，有必要改善这一缺陷。\n\n发明内容\n\n[0003]本发明实施例提供一种背光模组，用于解决现有技术的背光模组的组装工序复杂以及难以实现薄型化和轻量化的技术问题。\n\n[0004]本发明实施例提供一种背光模组，包括基板、位于所述基板的一侧表面的介质层、位于所述介质层远离所述基板的一侧表面的棱镜层、位于所述棱镜层远离所述介质层的一侧表面的第一扩散层、位于所述第一扩散层远离所述棱镜层的一侧表面且阵列分布的多个发光二极管组件以及位于所述多个发光二极管组件远离所述第一扩散层的一侧的反射层；其中，所述介质层远离所述基板的一侧表面形成有棱镜结构，所述棱镜层覆盖所述棱镜结构。\n\n[0005]在本发明实施例提供的背光模组中，所述背光模组还包括第二扩散层，所述第二扩散层设置于所述第一扩散层远离所述棱镜层的一侧表面且覆盖所述多个发光二极管组件，所述反射层位于所述第二扩散层远离所述第一扩散层的一侧表面。\n\n[0006]在本发明实施例提供的背光模组中，所述第一扩散层的内部填充有扩散粒子或所述第一扩散层的表面设置有扩散微结构；所述第二扩散层的内部填充有扩散粒子或所述第二扩散层的表面设置有扩散微结构。\n\n[0007]在本发明实施例提供的背光模组中，所述棱镜层的折射率大于或等于所述基板的折射率，且所述基板的折射率大于所述介质层的折射率。\n\n[0008]在本发明实施例提供的背光模组中，任一所述发光二极管组件包括位于所述第一扩散层远离所述棱镜层的一侧表面的透明电极以及位于所述透明电极远离所述第一扩散层的一侧表面的发光二极管。\n\n[0009]在本发明实施例提供的背光模组中，所述透明电极的材料为氧化铟锡或纳米银。\n\n[0010]本发明实施例提供一种背光模组的制备方法，包括步骤：S1、提供一基板；S2、在所述基板的一侧表面制备介质层；S3、在所述介质层远离所述基板的一侧表面制备棱镜结构；S4、在所述介质层远离所述基板的一侧表面制备棱镜层，所述棱镜层覆盖所述棱镜结构；S5、在所述棱镜层远离所述介质层的一侧表面制备第一扩散层；S6、在所述第一扩散层远离所述棱镜层的一侧表面制备多个阵列分布的发光二极管组件；S7、在所述多个发光二极管组件远离所述第一扩散层的一侧制备反射层。\n\n[0011]在本发明实施例提供的背光模组的制备方法中，所述步骤S6和所述步骤S7之间还包括步骤：S601、在所述第一扩散层远离所述棱镜层的一侧表面制备第二扩散层，所述第二扩散层覆盖所述多个发光二极管组件。\n\n[0012]本发明实施例还提供一种显示装置，包括显示面板、位于所述显示面板的一侧的第一偏光层、位于所述显示面板的另一侧的第二偏光层以及位于所述第一偏光层远离所述显示面板的一侧表面的背光模组；所述背光模组包括位于所述第一偏光层远离所述显示面板的一侧表面的介质层、位于所述介质层远离所述第一偏光层的一侧表面的棱镜层、位于所述棱镜层远离所述介质层的一侧表面的第一扩散层、位于所述第一扩散层远离所述棱镜层的一侧表面且阵列分布的多个发光二极管组件以及位于所述多个发光二极管组件远离所述第一扩散层的一侧的反射层；其中，所述介质层远离所述第一偏光层的一侧表面形成有棱镜结构，所述棱镜层覆盖所述棱镜结构。\n\n[0013]在本发明实施例提供的显示装置中，所述显示装置还包括第二扩散层，所述第二扩散层设置于所述第一扩散层远离所述棱镜层的一侧表面且覆盖所述多个发光二极管组件，所述反射层位于所述第二扩散层远离所述第一扩散层的一侧表面。\n\n[0014]有益效果：本发明实施例提供的一种背光模组，包括基板、位于所述基板的一侧表面的介质层、位于所述介质层远离所述基板的一侧表面的棱镜层、位于所述棱镜层远离所述介质层的一侧表面的第一扩散层、位于所述第一扩散层远离所述棱镜层的一侧表面且阵列分布的多个发光二极管组件以及位于所述多个发光二极管组件远离所述第一扩散层的一侧的反射层；其中，所述介质层远离所述基板的一侧表面形成有棱镜结构，所述棱镜层覆盖所述棱镜结构。本发明通过将介质层、棱镜层、第一扩散层、多个发光二极管组件以及反射层均集成在一张基板上，不需要一层一层的组装，简化了背光模组的组装工序，而且每一层之间都是紧密相连，不存在空隙，也不需要额外增设光学胶粘连，可使得背光模组的厚度得以减薄，实现薄型化和轻量化。\n\n附图说明\n\n[0015]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。\n\n[0016]图1是本发明实施例提供的背光模组的基本结构示意图。\n\n[0017]图2是本发明实施例提供的背光模组的制备方法流程图。\n\n[0018]图3是本发明实施例提供的显示装置的基本结构示意图。\n\n具体实施方式\n\n[0019]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。在附图中，为了清晰及便于理解和描述，附图中绘示的组件的尺寸和厚度并未按照比例。\n\n[0020]如图1所示，为本发明实施例提供的背光模组的基本结构示意图，所述背光模组包括基板101、位于所述基板101的一侧表面的介质层102、位于所述介质层102远离所述基板101的一侧表面的棱镜层103、位于所述棱镜层103远离所述介质层102的一侧表面的第一扩散层104、位于所述第一扩散层104远离所述棱镜层103的一侧表面且阵列分布的多个发光二极管组件105以及位于所述多个发光二极管组件105远离所述第一扩散层104的一侧的反射层106；其中，所述介质层102远离所述基板101的一侧表面形成有棱镜结构107，所述棱镜层103覆盖所述棱镜结构107。\n\n[0021]可以理解的是，所述多个发光二极管组件105发出的光为点状光源，需要通过所述第一扩散层104将点状光源柔化为面光源，并遮蔽灯影，所述棱镜层103将从所述第一扩散层104中入射来的光线进一步汇聚，从而提升正面亮度，所述反射层106的主要作用是把所述多个发光二极管组件105向下的出射光反射至所述第一扩散层104中，以提高光源的利用率。\n\n[0022]现有技术中的反射层、发光二极管组件、扩散层以及棱镜层均是通过光学胶粘连，或直接堆叠(即各个膜层之间还存在空气层，且容易松动、移位)，组装工序比较复杂，难以实现薄型化和轻量化。本发明通过在基板101上设置具有棱镜结构107的介质层102，将棱镜层103直接形成于介质层102具有棱镜结构107的一侧表面，棱镜层103通过填充棱镜结构107以形成棱镜，并且将第一扩散层104、多个发光二极管组件105以及反射层106也集成在基板101上，不需要一层一层的组装，简化了背光模组的组装工序，而且每一层之间都是紧密相连，不存在空隙，也不需要额外增设光学胶粘连，可使得背光模组的厚度得以减薄，实现薄型化和轻量化。\n\n[0023]在一种实施例中，所述背光模组还包括第二扩散层108，所述第二扩散层108设置于所述第一扩散层104远离所述棱镜层103的一侧表面且覆盖所述多个发光二极管组件105，所述反射层106位于所述第二扩散层108远离所述第一扩散层104的一侧表面。可以理解的是，本发明通过在多个发光二极管组件105与反射层106之间设置第二扩散层108，增加了所述多个发光二极管组件105向下的出射光的扩散路径，使得所述多个发光二极管组件105的出射光被均匀的扩散，使得混光更均匀。\n\n[0024]在其他实施例中，所述多个发光二极管组件105与所述反射层106之间也可以设置一层透明硅胶，以实现对所述多个发光二极管组件105的保护，也可以增加所述多个发光二极管组件105向下的出射光的扩散路径，使得混光更均匀。\n\n[0025]在一种实施例中，所述第一扩散层104的内部填充有扩散粒子或所述第一扩散层104的表面设置有扩散微结构；所述第二扩散层108的内部填充有扩散粒子或所述第二扩散层108的表面设置有扩散微结构。所述第一扩散层104和所述第二扩散层108都是为了使所述多个发光二极管组件105的出射光充分散射，实现光源更柔和、更均匀。本发明实施例通过在所述第一扩散层104和所述第二扩散层108的内部添加无机或有机的光散射粒子，或者对所述第一扩散层104和所述第二扩散层108的表面进行处理，以形成扩散微结构，使所述多个发光二极管组件105的出射光发生不同方向的折射、反射和散射，从而改变所述多个发光二极管组件105的出射光的传播路线，实现充分扩散的效果。而且，通过改变扩散微结构的形状和排布，可以调整扩散角度和光场的分布，使出射光具有更好的视角特性和亮度均匀性。\n\n[0026]在一种实施例中，所述棱镜层103的折射率大于或等于所述基板101的折射率，且所述基板101的折射率大于所述介质层102的折射率。可以理解的是，由于所述棱镜层103的折射率大于所述介质层102的折射率，当光线从所述棱镜层103射向所述介质层102时，当入射角大于临界角时，会发生全反射，此时全反射回来的光线经反射层106反射又经所述棱镜层103汇聚，从而可以提升光线向上的亮度，提高光源利用率。且所述基板101的折射率大于所述介质层102的折射率，从而可以减少由所述介质层102射向所述基板101的光线的全反射，进一步提升了光线向上的亮度，提高了光源利用率。\n\n[0027]在一种实施例中，任一所述发光二极管组件105包括位于所述第一扩散层104远离所述棱镜层103的一侧表面的透明电极1051以及位于所述透明电极1051远离所述第一扩散层104的一侧表面的发光二极管1052。可以理解的是，由于所述背光模组的各个膜层是沉积在所述基板101上，因此，需先制备透明电极1051的图案，再进行发光二极管1052绑定。在一种实施例中，所述透明电极1051的材料为氧化铟锡或纳米银，所述发光二极管1052包括红色发光二极管、绿色发光二极管以及蓝色发光二极管，或所述发光二极管1052均为蓝色发光二极管。\n\n[0028]接下来，请参阅图2，为本发明实施例提供的背光模组的制备方法流程图，所述制备方法包括步骤：\n\n[0029]S1、提供一基板；\n\n[0030]S2、在所述基板的一侧表面制备介质层；\n\n[0031]S3、在所述介质层远离所述基板的一侧表面制备棱镜结构；\n\n[0032]S4、在所述介质层远离所述基板的一侧表面制备棱镜层，所述棱镜层覆盖所述棱镜结构；\n\n[0033]S5、在所述棱镜层远离所述介质层的一侧表面制备第一扩散层；\n\n[0034]S6、在所述第一扩散层远离所述棱镜层的一侧表面制备多个阵列分布的发光二极管组件；\n\n[0035]S7、在所述多个发光二极管组件远离所述第一扩散层的一侧制备反射层。\n\n[0036]可以理解的是，本发明通过在基板上制备介质层，在介质层远离基板的一侧表面通过压印工艺形成棱镜结构，将棱镜层直接形成于介质层具有棱镜结构的一侧表面，棱镜层通过填充棱镜结构以形成棱镜，并且将第一扩散层、多个发光二极管组件以及反射层也集成在基板上，不需要一层一层的组装，简化了背光模组的组装工序，而且每一层之间都是紧密相连，不存在空隙，也不需要额外增设光学胶粘连，可使得背光模组的厚度得以减薄，实现薄型化和轻量化。\n\n[0037]在一种实施例中，所述步骤S6和所述步骤S7之间还包括步骤：S601、在所述第一扩散层远离所述棱镜层的一侧表面制备第二扩散层，所述第二扩散层覆盖所述多个发光二极管组件。可以理解的是，本发明通过在多个发光二极管组件与反射层之间增加第二扩散层，增加了所述多个发光二极管组件向下的出射光的扩散路径，使得所述多个发光二极管组件的出射光被均匀的扩散，使得混光更均匀。\n\n[0038]在一种实施例中，所述第一扩散层的内部填充有扩散粒子或所述第一扩散层的表面设置有扩散微结构；所述第二扩散层的内部填充有扩散粒子或所述第二扩散层的表面设置有扩散微结构。在一种实施例中，所述第二扩散层的材料和制备工艺与所述第一扩散层相同。\n\n[0039]可以理解的是，所述第一扩散层和所述第二扩散层都是为了使所述多个发光二极管组件的出射光充分散射，实现光源更柔和、更均匀。本发明实施例通过在所述第一扩散层和所述第二扩散层的内部添加无机或有机的光散射粒子，或者对所述第一扩散层和所述第二扩散层的表面通过压印工艺以形成扩散微结构，使所述多个发光二极管组件的出射光发生不同方向的折射、反射和散射，从而改变所述多个发光二极管组件的出射光的传播路线，实现充分扩散的效果。而且，通过改变扩散微结构的形状和排布，可以调整扩散角度和光场的分布，使出射光具有更好的视角特性和亮度均匀性。\n\n[0040]在一种实施例中，任一所述发光二极管组件包括位于所述第一扩散层远离所述棱镜层的一侧表面的透明电极以及位于所述透明电极远离所述第一扩散层的一侧表面的发光二极管。可以理解的是，由于所述背光模组的各个膜层是依次沉积在所述基板上，因此，需先通过丝网印刷或成膜、曝光、刻蚀工艺制备透明电极的图案，再进行发光二极管绑定。在一种实施例中，所述透明电极的材料为氧化铟锡或纳米银，所述发光二极管包括红色发光二极管、绿色发光二极管以及蓝色发光二极管，或所述发光二极管均为蓝色发光二极管。\n\n[0041]需要说明的是，本发明实施例提供的背光模组，可以直接通过光学胶将所述基板远离所述介质层的一侧与显示面板粘合固定。也可以将所述基板剥离，将所述介质层远离所述棱镜层的一侧通过光学胶与显示面板粘合固定。在其他实施例中，也可以不需要设置基板，直接将显示面板两侧的偏光片贴附完成后，在显示面板的下偏光片远离显示面板的一侧表面依次沉积介质层、棱镜层、第一扩散层、透明电极图案，然后绑定发光二极管，最后制备反射层，以完成显示装置的制备。\n\n[0042]具体的，请参阅图3，为本发明实施例提供的显示装置的基本结构示意图，所述显示装置包括显示面板20、位于所述显示面板20的一侧的第一偏光层30、位于所述显示面板20的另一侧的第二偏光层40以及位于所述第一偏光层30远离所述显示面板20的一侧表面的背光模组10。\n\n[0043]所述背光模组10包括位于所述第一偏光层30远离所述显示面板20的一侧表面的介质层102、位于所述介质层102远离所述第一偏光层30的一侧表面的棱镜层103、位于所述棱镜层103远离所述介质层102的一侧表面的第一扩散层104、位于所述第一扩散层104远离所述棱镜层103的一侧表面且阵列分布的多个发光二极管组件105以及位于所述多个发光二极管组件105远离所述第一扩散层104的一侧的反射层106；其中，所述介质层102远离所述第一偏光层30的一侧表面形成有棱镜结构107，所述棱镜层103覆盖所述棱镜结构107。\n\n[0044]可以理解的是，本发明通过在第一偏光层30远离显示面板20的一侧表面设置具有棱镜结构107的介质层102，将棱镜层103直接形成于介质层102具有棱镜结构107的一侧表面，棱镜层103通过填充棱镜结构107以形成棱镜，并且将第一扩散层104、多个发光二极管组件105以及反射层106也集成在第一偏光层30远离显示面板20的一侧，不需要一层一层的组装，简化了背光模组10的组装工序，而且每一层之间都是紧密相连，不存在空隙，也不需要额外增设光学胶粘连，可使得背光模组10的厚度得以减薄，使得显示装置整体实现薄型化和轻量化。\n\n[0045]在一种实施例中，所述显示装置还包括第二扩散层108，所述第二扩散层108设置于所述第一扩散层104远离所述棱镜层103的一侧表面且覆盖所述多个发光二极管组件105，所述反射层106位于所述第二扩散层108远离所述第一扩散层104的一侧表面。可以理解的是，本发明通过在多个发光二极管组件105与反射层106之间设置第二扩散层108，增加了所述多个发光二极管组件105向下的出射光的扩散路径，使得所述多个发光二极管组件105的出射光被均匀的扩散，使得混光更均匀。\n\n[0046]在其他实施例中，所述多个发光二极管组件105与所述反射层106之间也可以设置一层透明硅胶，以实现对所述多个发光二极管组件105的保护，也可以增加所述多个发光二极管组件105向下的出射光的扩散路径，使得混光更均匀。\n\n[0047]在一种实施例中，任一所述发光二极管组件105包括位于所述第一扩散层104远离所述棱镜层103的一侧表面的透明电极1051以及位于所述透明电极1051远离所述第一扩散层104的一侧表面的发光二极管1052。可以理解的是，由于所述背光模组的各个膜层是沉积在第一偏光层30远离显示面板20的一侧表面，因此，需先制备透明电极1051的图案，再进行发光二极管1052绑定。在一种实施例中，所述透明电极1051的材料为氧化铟锡或纳米银，所述发光二极管1052包括红色发光二极管、绿色发光二极管以及蓝色发光二极管，或所述发光二极管1052均为蓝色发光二极管。\n\n[0048]在一种实施例中，所述显示面板20包括相对设置的第一基板201和第二基板202以及夹设于所述第一基板201和所述第二基板202之间的液晶分子203，所述液晶分子203通过框胶50密封。\n\n[0049]在一种实施例中，所述第一偏光层30为第一金属线栅，是通过在显示面板20的一侧表面成膜、纳米压印及刻蚀工艺制作而成。所述第二偏光层40制备于显示面板20的另一侧，所述第二偏光层40可以为与所述第一金属线栅正交的第二金属线栅，或为与所述第一金属线栅正交的偏光片。\n\n[0050]可以理解的是，后续完成柔性电路板绑定及驱动芯片绑定等模组工艺，即可完成显示装置的制备。本发明实施例提供的显示装置可以为：手机、平板电脑、笔记本电脑、数码相机、导航仪等具有显示功能的产品或部件。\n\n[0051]综上所述，本发明实施例提供的一种背光模组，包括基板、位于所述基板的一侧表面的介质层、位于所述介质层远离所述基板的一侧表面的棱镜层、位于所述棱镜层远离所述介质层的一侧表面的第一扩散层、位于所述第一扩散层远离所述棱镜层的一侧表面且阵列分布的多个发光二极管组件以及位于所述多个发光二极管组件远离所述第一扩散层的一侧的反射层；其中，所述介质层远离所述基板的一侧表面形成有棱镜结构，所述棱镜层覆盖所述棱镜结构。本发明通过将介质层、棱镜层、第一扩散层、多个发光二极管组件以及反射层均集成在一张基板上，不需要一层一层的组装，简化了背光模组的组装工序，而且每一层之间都是紧密相连，不存在空隙，也不需要额外增设光学胶粘连，可使得背光模组的厚度得以减薄，实现薄型化和轻量化，解决了现有技术的背光模组的组装工序复杂以及难以实现薄型化和轻量化的技术问题。\n\n[0052]以上对本发明实施例所提供的一种背光模组及其制备方法、显示装置进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。');
INSERT INTO `os_patent_instruction_text` VALUES (10963, 24017, '技术领域\n\n[0001]本发明涉及显示设备领域，特别是一种显示面板及其制备方法、三维显示设备。\n\n背景技术\n\n[0002]3D(3-Dimension，三维)显示由于其存在深度信息、能够实现很多2D (2-Dimension，二维)显示所不具备的功能和观看体验，成为了备受关注的显示技术。3D显示最基本原理是根据人眼的双眼视差特性，左、右眼图像分别进入左、右眼后通过大脑混合后而产生立体感觉。\n\n[0003]然而，目前大多数的3D显示都是在2D显示屏上搭载光栅结构，例如偏光调制器件，再通过分光眼镜将左、右眼光线分离，从而使观看者左眼看到左眼图像，右眼看到右眼图，进而获得立体感觉。不难看出，上述3D显示器件结构复杂。\n\n发明内容\n\n[0004]本发明的目的是提供一种显示面板及其制备方法、三维显示设备，以解决现有技术中3D显示器件结构复杂的问题。\n\n[0005]为实现上述目的，本发明提供一种显示面板，所述显示面板包括叠层设置的背光模组和液晶层。其中，所述液晶层中填充有胆甾相液晶和量子点材料。\n\n[0006]进一步地，所述量子点材料与所述胆甾相液晶的质量比为1：4-20。\n\n[0007]进一步地，所述胆甾相液晶的反射波带为300-700nm。\n\n[0008]进一步地，所述液晶层具有一第一旋向区以及与所述第一旋向区连接的第二旋向区。在所述第一旋向区中胆甾相液晶的旋向与所述第二旋向区中胆甾相液晶的旋向相反。\n\n[0009]进一步地，所述液晶层包括第一基板、第二基板、支撑层以及至少一配向层。\n\n[0010]所述第一基板中具有第一电极。所述第二基板设于所述第一基板上，所述第二基板中具有第二电极。所述支撑层设于所述第一基板与所述第二基板之间，所述支撑层中设有若干填充孔，所述胆甾相液晶和所述量子点材料填充在所述填充孔中。所述配向层设于所述第一基板朝向所述支撑层的一表面上，和/或设于所述第二基板朝向所述支撑层的一表面上。\n\n[0011]进一步地，所述填充孔包括第一填充孔、第二填充孔和第三填充孔。所述量子点材料包括红色量子点材料、绿色量子点材料和蓝色量子点材料。所述第一填充孔中的为所述红色量子点材料，所述第二填充孔中的为所述绿色量子点材料，所述第三填充孔中为所述蓝色量子点材料。\n\n[0012]进一步地，所述背光模组中具有背光源，所述背光源为蓝色光源。所述背光源为迷你发光二极管或微型发光二极管。\n\n[0013]本发明中还提供一种显示面板的制备方法，所述显示面板的制备方法中包括以下步骤：\n\n[0014]制备背光模组。制备液晶层，所述液晶层中填充有胆甾相液晶和量子点材料。组装所述背光模组和所述液晶层。\n\n[0015]进一步地，所述制备液晶层步骤中包括以下步骤：\n\n[0016]制备第一基板、第二基板和配向层。在所述配向层的一表面上制备支撑层，在所述支撑层中通过光刻工艺形成填充孔。调配第一墨水和第二墨水，所述第一墨水和所述第二墨水中均含有胆甾相液晶和量子点材料，其中，所述第一墨水中胆甾相液晶的旋向和所述第二墨水中胆甾相液晶的旋向不同。将所述第一墨水填充至第一旋向区中的填充孔中。将所述第二墨水填充至第二旋向区中的填充孔中。将所有膜层组装形成所述液晶层。\n\n[0017]本发明中还提供一种三维显示设备，包括分光眼镜以及如上所述的显示面板。\n\n[0018]本发明的优点是：本发明中所提供的显示面板通过胆甾相液晶和量子点材料便可将其显示的图像通过不同方向的圆偏振光形成的两组显示画面，从而去除现有技术中的偏光调制器件，简化了3D显示面板的结构，同时还能兼具量子点材料所带来的节能、广色域以及高亮度的特点，优化3D显示的画面质感。\n\n附图说明\n\n[0019]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0020]图1为本发明实施例中显示面板的层状结构示意图；\n\n[0021]图2为本发明实施例中背光模组的层状结构示意图；\n\n[0022]图3为本发明实施例中液晶层的层状结构示意图；\n\n[0023]图4为图3中虚线框A中液晶层的层状结构放大示意图；\n\n[0024]图5为图3中虚线框B中液晶层的层状结构放大示意图；\n\n[0025]图6为本发明实施例中显示面板为亮态时胆甾相液晶偏转示意图；\n\n[0026]图7为本发明实施例中显示面板为暗态时胆甾相液晶偏转示意图；\n\n[0027]图8为本发明实施例中显示面板制备方法的流程示意图。\n\n[0028]图中部件表示如下：\n\n[0029]显示面板1；\n\n[0030]背光模组10； 背光源11；\n\n[0031]光学膜片组12； 液晶层20；\n\n[0032]第一旋向区20A； 第二旋向区20B；\n\n[0033]第一基板21； 第二基板22；\n\n[0034]支撑层23； 填充孔24；\n\n[0035]第一填充孔241； 第二填充孔242；\n\n[0036]第三填充孔243； 胆甾相液晶25；\n\n[0037]左旋胆甾相液晶251； 右旋胆甾相液晶252；\n\n[0038]量子点材料26； 红色量子点材料261；\n\n[0039]绿色量子点材料262； 蓝色量子点材料263；\n\n[0040]配向层27。\n\n具体实施方式\n\n[0041]以下结合说明书附图详细说明本发明的优选实施例，以向本领域中的技术人员完整介绍本发明的技术内容，以举例证明本发明可以实施，使得本发明公开的技术内容更加清楚，使得本领域的技术人员更容易理解如何实施本发明。然而本发明可以通过许多不同形式的实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例，下文实施例的说明并非用来限制本发明的范围。\n\n[0042]在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。附图所示的每一部件的尺寸和厚度是任意示出的，本发明并没有限定每个组件的尺寸和厚度。为了使图示更清晰，附图中有些地方适当夸大了部件的厚度。\n\n[0043]本发明的说明书和权利要求书以及上述附图中的术语“第一”、“第二”、“第三”等(如果存在)是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。应当理解，这样描述的对象在适当情况下可以互换。此外，术语“包括”和“具有”以及他们的任何变形，意图在于覆盖不排他的包含。\n\n[0044]本发明实施例中提供了一种显示面板1，所述显示面板1可以实现三维立体的显示效果。如图1所示，所述显示面板1包括叠层设置的背光膜层和液晶层20。\n\n[0045]如图2所示，所述背光模组10中包括光学膜片组12以及背光源11。所述光学膜片组12中一般包括导光板(LGP)、反射片(REF)、扩散片(DIF)、棱镜片(BEF)等光学膜片中的一种或多种。所述光学膜片组12通过其多层的光学膜片的合作，在不增加光源数量的情况下，通过改善光线的角分布，引导光的折射、反射与散射方向，均匀光线，将光线集中到正视角度上，提高总的出光光通量，从而减少光源的损耗，提高显示面板1的轴向亮度。\n\n[0046]所述背光源11设于所述光学膜片组12远离所述液晶层20的一表面上，所述背光源11中设有若干微型发光二极管(Micro LED)或迷你发光二极管 (Mini LED)，用于提供光源。在本发明实施例中，所述背光源11为蓝色光源。\n\n[0047]如图3所示，所述液晶层20中包括第一基板21、第二基板22、支撑层 23以及填充材料。所述第一基板21和所述第二基板22叠层设置，所述支撑层23支撑于所述第一基板21与所述第一基板21之间，所述填充材料填充在所述支撑层23中。\n\n[0048]所述第一基板21为阵列基板，其设有第一电极和薄膜晶体管。所述薄膜晶体管阵列排布在所述第一基板21中，所述第一电极设于所述薄膜晶体管上并与所述薄膜晶体管电连接。其中，所述第一电极位于所述第一基板21朝向所述支撑层23的一侧。\n\n[0049]所述第二基板22中设有由ITO走线排布而成的第二电极。在本发明实施例中，所述第二基板22为ITO导电基板，但在本发明的其他实施例中，所述第二基板22也可以为彩膜基板。当所述第二基板22为彩膜基板时，其也具有第二电极，所述第二电极设于所述彩膜基板朝向所述支撑层23的一侧。\n\n[0050]所述支撑层23设于所述第一基板21与所述第二基板22之间。所述支撑层23中具有若干填充孔24，所述填充孔24贯穿所述支撑层23，所述填充材料填充在所述填充孔24中。所述填充材料中包含液晶材料和量子点材料26，并且所述量子点材料26与所述液晶材料的质量比为1：4-20。\n\n[0051]所述液晶材料为反射波带为300-700nm的胆甾相液晶25。如图3所示，所述液晶层20具有第一旋向区20A和与所述第一旋向区20A相连的第二旋向区20B，如图4-图5所示，所述第一旋向区20A内的胆甾相液晶25和所述第二旋向区20B内的胆甾相液晶25的旋向不同。具体的，所述第一旋向区20A 内的为左旋胆甾相液晶251，所述第二旋向区20B内的为右旋胆甾相液晶252。在本发明的其他实施例中，液晶层的第一旋向区内所填充的可以为右旋胆甾相液晶，第二旋向区内所填充的可以为左旋胆甾相液晶向。\n\n[0052]所述胆甾相液晶25由手性化合物和向列相液晶组成，其中，本发明实施例中所选用的手性化合物可以为手性添加剂S811、手性添加剂R811、手性添加剂S5011、手性添加剂R5011、手性添加剂S1011、手性添加剂R1011以及手性添加剂CB15中的至少两种。\n\n[0053]所述胆甾相液晶25的旋向由手性化合物的旋向决定，所述第一旋向区20A 内的胆甾相液晶25和所述第二旋向区20B内的胆甾相液晶25通过选用不同旋向的手性化合物可就可以实现其液晶分子旋向的不同。\n\n[0054]所述量子点材料26包括红色量子点材料261、绿色量子点材料262以及蓝色量子点材料263，并且每一填充孔24中所填充的量子点材料26为上述量子点材料26中的一种。具体的，所述填充孔24分为第一填充孔241、第二填充孔242以及第三填充孔243，所述第一填充孔241、所述第二填充孔242和所述第三填充孔243均匀分布在所述第一旋向区20A和所述第二旋向区20B 中。如图4-图5所示，所述第一填充孔241中所使用的量子点材料为红色量子点材料261，所述第二填充孔242中所使用的量子点材料为绿色量子点材料 262，所述第三填充孔243中所使用的量子点材料为蓝色量子点材料263。由于量子点材料26具有光致发光特性，当蓝色的背光光线射入所述填充孔24 时，蓝色背光便会激发填充孔24中的量子点材料26发光，使所述量子点材料 26发出与其本身颜色相同的光线，而红色光线、绿色光线和蓝色光线能够组合形成彩色画面，从而实现全彩显示。\n\n[0055]综上所述，在所述液晶层20的第一旋向区20A中，如图4所示，其第一填充孔241中的填充材料为左旋胆甾相液晶251和红色量子点材料261，其第二填充孔242中的填充材料为左旋胆甾相液晶251和绿色量子点材料262，其第三填充孔243中的填充材料为左旋胆甾相液晶251和蓝色量子点材料263。在所述液晶层20的第二旋向区20B中，如图5所示，其第一填充孔241中的填充材料为右旋胆甾相液晶252和红色量子点材料261，其第二填充孔242中的填充材料为右旋胆甾相液晶252和绿色量子点材料262，其第三填充孔243 中的填充材料为右旋胆甾相液晶252和蓝色量子点材料263。\n\n[0056]本发明实施例所使用的胆甾相液晶25具有圆二色性，其平面织构状态能够选择性反射左旋或右旋圆偏振光，而透过另一旋向的圆偏振光。因此，当所述第一旋向区20A内的胆甾相液晶25反射左旋圆偏振光、透过右旋源圆偏振光时，所述第二旋向区20B内的胆甾相液晶25则反射右旋圆偏振光、透光左旋圆偏振光；当所述第一旋向区20A内的胆甾相液晶25反射右旋圆偏振光、透过左旋圆偏振光时，所述第二旋向区20B内的胆甾相液晶25则反射左旋圆偏振光、透过右旋圆偏振光。进而所述液晶层20能将显示面板1所显示的图像通过左旋圆偏振光和右旋圆偏振光形成的两组画面，再配合使用分光眼镜就能实现3D立体的显示效果。\n\n[0057]同时，蓝色背光还能引发液晶层20中的量子点材料26发射特定波长的圆偏振光，控制量子点材料26的发射波长处于胆甾相液晶25的反射波带中心，从而获得高圆偏振度的圆偏振光，提高3D显示的立体效果。\n\n[0058]本发明实施例中所提供的显示面板1通过对第一基板21和第二基板22 通电，促使第一电极与第二电极之间产生电场，通过电场控制液晶层20中胆甾相液晶25的织构转变，从而实现光开关功能。具体的，如图6所示，当背光模组10开启且液晶层20中胆甾相液晶25处于平面织构时，背光光线经过胆甾相液晶25和量子点材料26的反射，形成特定方向的圆偏振光，显示面板 1呈亮态；如图7所示，当背光模组10关闭且对液晶层20中胆甾相液晶25施加电场时，所述胆甾相液晶25转变为场致向列相，量子点材料26不发光，显示面板1呈暗态。\n\n[0059]如图3所示，所述液晶层20中还包括两层配向层27，所述配向层27分别设于所述第一基板21与所述支撑层23之间和所述第二基板22与所述支撑层23之间。所述配向层27用于使线状的液晶分子沿着固定的方向排列，从而使液晶分子的排列整齐，防止发生漏光现象。\n\n[0060]在本发明的其他实施例中，所述液晶层还可以只设置单层的配向层，其可设于第一基板与支撑层之间或设于第二基板与支撑层之间。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其它实施例，都属于本申请保护的范围。\n\n[0061]本发明实施例中还提供一种显示面板1的制备方法，用以制备如图1所示的显示面板1。所述制备方法的制备流程如图8所示，其包括以下制备步骤：\n\n[0062]步骤S10)制备背光模组10：通过背光制程组装背光源11与光学膜片组12，形成所述背光模组10。\n\n[0063]步骤S20)制备液晶层20：制备第一基板21、第二基板22以及两块配向层27；在一配向层27的一表面上形成一层无机材料，并通过光阻工艺将所述无机材料层图案化，形成支撑层23以及支撑层23中的填充孔24；按照1：4-20 的比例混合量子点材料26和胆甾相液晶25，调配成填充材料，并将所述填充材料通过喷墨打印或注入的方式填充至所述填充孔24中；将另一块配向层27 贴合在所述支撑层23远离第一块配向层27的表面上，然后将第一基板21和第二基板22分别贴合在两块配向层27远离所述支撑层23的一表面上，形成所述液晶层20。\n\n[0064]其中，所述填充材料分为第一墨水和第二墨水，所述第一墨水中胆甾相液晶25的旋向与所述第二墨水中胆甾相液晶25的旋向相反。具体的，所述第一墨水中的为左旋胆甾相液晶251，所述第二墨水中的为右旋胆甾相液晶252。所述第一墨水填充至第一旋向区20A中的填充孔24中，所述第二墨水填充至第二旋向区20B中的填充孔24中。\n\n[0065]所述第一墨水分为红色第一墨水、绿色第一墨水和蓝色第一墨水，所述第二墨水也分为红色第二墨水、绿色第二墨水以及蓝色第二墨水。其中，所述红色第一墨水和所述红色第二墨水中所添加的量子点材料为红色量子点材料 261，所述绿色第一墨水和所述绿色第二墨水中所添加的量子点材料为绿色量子点材料262，所述蓝色第一墨水和所述蓝色第二墨水中所添加的量子点材料为蓝色量子点材料263。\n\n[0066]所述填充孔24分为第一填充孔241、第二填充孔242和第三填充孔243，所述第一填充孔241、所述第二填充孔242和所述第三填充孔243均匀的分布在所述第一旋向区20A和所述第二旋向区20B内。具体的，所述红色第一墨水填充至所述第一旋向区20A内的第一填充孔241中，所述红色第二墨水滴入所述第二旋向区20B内的第一填充孔241中，所述绿色第一墨水填充至所述第一旋向区20A内的第二填充孔242中，所述绿色第二墨水填充至所述第二旋向区 20B内的第二填充孔242中，所述蓝色第一墨水填充至所述第一旋向区20A内的第三填充孔243中。所述蓝色第二墨水填充至所述第二旋向区20B内的第三填充孔243中。\n\n[0067]步骤S30)组装所述背光模组10和所述液晶层20，形成如图1所示的显示面板1。\n\n[0068]本发明实施例中还提供一种三维显示设备，所述三维显示设备包括如上所述的显示面板1以及分光眼镜。本发明实施例中所提供的显示面板1通过填充具有不同旋向的胆甾相液晶25和量子点材料26从而分为能分别产生方向不同的圆偏振光的第一旋向区20A和第二旋向区20B，进而将显示的图像也通过两组不同的旋向的圆偏振光显示出来。所述分光眼镜的左右镜片也分别采用不同偏振方向的偏光镜片。当使用者带上此分光眼睛观看显示面板1时，所述分光眼镜将左、右眼光线分离，从而使观看者左右眼接收到两组画面，再经过大脑混合成立体影像，从而实现3D立体显示。\n\n[0069]本发明实施例中所提供的显示面板去除了现有技术中的偏光调制器件，其通过胆甾相液晶和量子点材便可将显示面板所显示的图像通过不同方向的圆偏振光形成的两组显示画面，简化了3D显示面板的结构，同时还能兼具量子点材料所带来的节能、广色域以及高亮度的特点，优化了3D显示的画面质感。\n\n[0070]虽然在本文中参照了特定的实施方式来描述本发明，但是应该理解的是，这些实施例仅仅是本发明的原理和应用的示例。因此应该理解的是，可以对示例性的实施例进行许多修改，并且可以设计出其他的布置，只要不偏离所附权利要求所限定的本发明的精神和范围。应该理解的是，可以通过不同于原始权利要求所描述的方式来结合不同的从属权利要求和本文中所述的特征。还可以理解的是，结合单独实施例所描述的特征可以使用在其他所述实施例中。', '技术领域\n\n[0001]本发明涉及显示设备领域，特别是一种显示面板及其制备方法、三维显示设备。\n\n背景技术\n\n[0002]3D(3-Dimension，三维)显示由于其存在深度信息、能够实现很多2D (2-Dimension，二维)显示所不具备的功能和观看体验，成为了备受关注的显示技术。3D显示最基本原理是根据人眼的双眼视差特性，左、右眼图像分别进入左、右眼后通过大脑混合后而产生立体感觉。\n\n[0003]然而，目前大多数的3D显示都是在2D显示屏上搭载光栅结构，例如偏光调制器件，再通过分光眼镜将左、右眼光线分离，从而使观看者左眼看到左眼图像，右眼看到右眼图，进而获得立体感觉。不难看出，上述3D显示器件结构复杂。\n\n发明内容\n\n[0004]本发明的目的是提供一种显示面板及其制备方法、三维显示设备，以解决现有技术中3D显示器件结构复杂的问题。\n\n[0005]为实现上述目的，本发明提供一种显示面板，所述显示面板包括叠层设置的背光模组和液晶层。其中，所述液晶层中填充有胆甾相液晶和量子点材料。\n\n[0006]进一步地，所述量子点材料与所述胆甾相液晶的质量比为1：4-20。\n\n[0007]进一步地，所述胆甾相液晶的反射波带为300-700nm。\n\n[0008]进一步地，所述液晶层具有一第一旋向区以及与所述第一旋向区连接的第二旋向区。在所述第一旋向区中胆甾相液晶的旋向与所述第二旋向区中胆甾相液晶的旋向相反。\n\n[0009]进一步地，所述液晶层包括第一基板、第二基板、支撑层以及至少一配向层。\n\n[0010]所述第一基板中具有第一电极。所述第二基板设于所述第一基板上，所述第二基板中具有第二电极。所述支撑层设于所述第一基板与所述第二基板之间，所述支撑层中设有若干填充孔，所述胆甾相液晶和所述量子点材料填充在所述填充孔中。所述配向层设于所述第一基板朝向所述支撑层的一表面上，和/或设于所述第二基板朝向所述支撑层的一表面上。\n\n[0011]进一步地，所述填充孔包括第一填充孔、第二填充孔和第三填充孔。所述量子点材料包括红色量子点材料、绿色量子点材料和蓝色量子点材料。所述第一填充孔中的为所述红色量子点材料，所述第二填充孔中的为所述绿色量子点材料，所述第三填充孔中为所述蓝色量子点材料。\n\n[0012]进一步地，所述背光模组中具有背光源，所述背光源为蓝色光源。所述背光源为迷你发光二极管或微型发光二极管。\n\n[0013]本发明中还提供一种显示面板的制备方法，所述显示面板的制备方法中包括以下步骤：\n\n[0014]制备背光模组。制备液晶层，所述液晶层中填充有胆甾相液晶和量子点材料。组装所述背光模组和所述液晶层。\n\n[0015]进一步地，所述制备液晶层步骤中包括以下步骤：\n\n[0016]制备第一基板、第二基板和配向层。在所述配向层的一表面上制备支撑层，在所述支撑层中通过光刻工艺形成填充孔。调配第一墨水和第二墨水，所述第一墨水和所述第二墨水中均含有胆甾相液晶和量子点材料，其中，所述第一墨水中胆甾相液晶的旋向和所述第二墨水中胆甾相液晶的旋向不同。将所述第一墨水填充至第一旋向区中的填充孔中。将所述第二墨水填充至第二旋向区中的填充孔中。将所有膜层组装形成所述液晶层。\n\n[0017]本发明中还提供一种三维显示设备，包括分光眼镜以及如上所述的显示面板。\n\n[0018]本发明的优点是：本发明中所提供的显示面板通过胆甾相液晶和量子点材料便可将其显示的图像通过不同方向的圆偏振光形成的两组显示画面，从而去除现有技术中的偏光调制器件，简化了3D显示面板的结构，同时还能兼具量子点材料所带来的节能、广色域以及高亮度的特点，优化3D显示的画面质感。\n\n附图说明\n\n[0019]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0020]图1为本发明实施例中显示面板的层状结构示意图；\n\n[0021]图2为本发明实施例中背光模组的层状结构示意图；\n\n[0022]图3为本发明实施例中液晶层的层状结构示意图；\n\n[0023]图4为图3中虚线框A中液晶层的层状结构放大示意图；\n\n[0024]图5为图3中虚线框B中液晶层的层状结构放大示意图；\n\n[0025]图6为本发明实施例中显示面板为亮态时胆甾相液晶偏转示意图；\n\n[0026]图7为本发明实施例中显示面板为暗态时胆甾相液晶偏转示意图；\n\n[0027]图8为本发明实施例中显示面板制备方法的流程示意图。\n\n[0028]图中部件表示如下：\n\n[0029]显示面板1；\n\n[0030]背光模组10； 背光源11；\n\n[0031]光学膜片组12； 液晶层20；\n\n[0032]第一旋向区20A； 第二旋向区20B；\n\n[0033]第一基板21； 第二基板22；\n\n[0034]支撑层23； 填充孔24；\n\n[0035]第一填充孔241； 第二填充孔242；\n\n[0036]第三填充孔243； 胆甾相液晶25；\n\n[0037]左旋胆甾相液晶251； 右旋胆甾相液晶252；\n\n[0038]量子点材料26； 红色量子点材料261；\n\n[0039]绿色量子点材料262； 蓝色量子点材料263；\n\n[0040]配向层27。\n\n具体实施方式\n\n[0041]以下结合说明书附图详细说明本发明的优选实施例，以向本领域中的技术人员完整介绍本发明的技术内容，以举例证明本发明可以实施，使得本发明公开的技术内容更加清楚，使得本领域的技术人员更容易理解如何实施本发明。然而本发明可以通过许多不同形式的实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例，下文实施例的说明并非用来限制本发明的范围。\n\n[0042]在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。附图所示的每一部件的尺寸和厚度是任意示出的，本发明并没有限定每个组件的尺寸和厚度。为了使图示更清晰，附图中有些地方适当夸大了部件的厚度。\n\n[0043]本发明的说明书和权利要求书以及上述附图中的术语“第一”、“第二”、“第三”等(如果存在)是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。应当理解，这样描述的对象在适当情况下可以互换。此外，术语“包括”和“具有”以及他们的任何变形，意图在于覆盖不排他的包含。\n\n[0044]本发明实施例中提供了一种显示面板1，所述显示面板1可以实现三维立体的显示效果。如图1所示，所述显示面板1包括叠层设置的背光膜层和液晶层20。\n\n[0045]如图2所示，所述背光模组10中包括光学膜片组12以及背光源11。所述光学膜片组12中一般包括导光板(LGP)、反射片(REF)、扩散片(DIF)、棱镜片(BEF)等光学膜片中的一种或多种。所述光学膜片组12通过其多层的光学膜片的合作，在不增加光源数量的情况下，通过改善光线的角分布，引导光的折射、反射与散射方向，均匀光线，将光线集中到正视角度上，提高总的出光光通量，从而减少光源的损耗，提高显示面板1的轴向亮度。\n\n[0046]所述背光源11设于所述光学膜片组12远离所述液晶层20的一表面上，所述背光源11中设有若干微型发光二极管(Micro LED)或迷你发光二极管 (Mini LED)，用于提供光源。在本发明实施例中，所述背光源11为蓝色光源。\n\n[0047]如图3所示，所述液晶层20中包括第一基板21、第二基板22、支撑层 23以及填充材料。所述第一基板21和所述第二基板22叠层设置，所述支撑层23支撑于所述第一基板21与所述第一基板21之间，所述填充材料填充在所述支撑层23中。\n\n[0048]所述第一基板21为阵列基板，其设有第一电极和薄膜晶体管。所述薄膜晶体管阵列排布在所述第一基板21中，所述第一电极设于所述薄膜晶体管上并与所述薄膜晶体管电连接。其中，所述第一电极位于所述第一基板21朝向所述支撑层23的一侧。\n\n[0049]所述第二基板22中设有由ITO走线排布而成的第二电极。在本发明实施例中，所述第二基板22为ITO导电基板，但在本发明的其他实施例中，所述第二基板22也可以为彩膜基板。当所述第二基板22为彩膜基板时，其也具有第二电极，所述第二电极设于所述彩膜基板朝向所述支撑层23的一侧。\n\n[0050]所述支撑层23设于所述第一基板21与所述第二基板22之间。所述支撑层23中具有若干填充孔24，所述填充孔24贯穿所述支撑层23，所述填充材料填充在所述填充孔24中。所述填充材料中包含液晶材料和量子点材料26，并且所述量子点材料26与所述液晶材料的质量比为1：4-20。\n\n[0051]所述液晶材料为反射波带为300-700nm的胆甾相液晶25。如图3所示，所述液晶层20具有第一旋向区20A和与所述第一旋向区20A相连的第二旋向区20B，如图4-图5所示，所述第一旋向区20A内的胆甾相液晶25和所述第二旋向区20B内的胆甾相液晶25的旋向不同。具体的，所述第一旋向区20A 内的为左旋胆甾相液晶251，所述第二旋向区20B内的为右旋胆甾相液晶252。在本发明的其他实施例中，液晶层的第一旋向区内所填充的可以为右旋胆甾相液晶，第二旋向区内所填充的可以为左旋胆甾相液晶向。\n\n[0052]所述胆甾相液晶25由手性化合物和向列相液晶组成，其中，本发明实施例中所选用的手性化合物可以为手性添加剂S811、手性添加剂R811、手性添加剂S5011、手性添加剂R5011、手性添加剂S1011、手性添加剂R1011以及手性添加剂CB15中的至少两种。\n\n[0053]所述胆甾相液晶25的旋向由手性化合物的旋向决定，所述第一旋向区20A 内的胆甾相液晶25和所述第二旋向区20B内的胆甾相液晶25通过选用不同旋向的手性化合物可就可以实现其液晶分子旋向的不同。\n\n[0054]所述量子点材料26包括红色量子点材料261、绿色量子点材料262以及蓝色量子点材料263，并且每一填充孔24中所填充的量子点材料26为上述量子点材料26中的一种。具体的，所述填充孔24分为第一填充孔241、第二填充孔242以及第三填充孔243，所述第一填充孔241、所述第二填充孔242和所述第三填充孔243均匀分布在所述第一旋向区20A和所述第二旋向区20B 中。如图4-图5所示，所述第一填充孔241中所使用的量子点材料为红色量子点材料261，所述第二填充孔242中所使用的量子点材料为绿色量子点材料 262，所述第三填充孔243中所使用的量子点材料为蓝色量子点材料263。由于量子点材料26具有光致发光特性，当蓝色的背光光线射入所述填充孔24 时，蓝色背光便会激发填充孔24中的量子点材料26发光，使所述量子点材料 26发出与其本身颜色相同的光线，而红色光线、绿色光线和蓝色光线能够组合形成彩色画面，从而实现全彩显示。\n\n[0055]综上所述，在所述液晶层20的第一旋向区20A中，如图4所示，其第一填充孔241中的填充材料为左旋胆甾相液晶251和红色量子点材料261，其第二填充孔242中的填充材料为左旋胆甾相液晶251和绿色量子点材料262，其第三填充孔243中的填充材料为左旋胆甾相液晶251和蓝色量子点材料263。在所述液晶层20的第二旋向区20B中，如图5所示，其第一填充孔241中的填充材料为右旋胆甾相液晶252和红色量子点材料261，其第二填充孔242中的填充材料为右旋胆甾相液晶252和绿色量子点材料262，其第三填充孔243 中的填充材料为右旋胆甾相液晶252和蓝色量子点材料263。\n\n[0056]本发明实施例所使用的胆甾相液晶25具有圆二色性，其平面织构状态能够选择性反射左旋或右旋圆偏振光，而透过另一旋向的圆偏振光。因此，当所述第一旋向区20A内的胆甾相液晶25反射左旋圆偏振光、透过右旋源圆偏振光时，所述第二旋向区20B内的胆甾相液晶25则反射右旋圆偏振光、透光左旋圆偏振光；当所述第一旋向区20A内的胆甾相液晶25反射右旋圆偏振光、透过左旋圆偏振光时，所述第二旋向区20B内的胆甾相液晶25则反射左旋圆偏振光、透过右旋圆偏振光。进而所述液晶层20能将显示面板1所显示的图像通过左旋圆偏振光和右旋圆偏振光形成的两组画面，再配合使用分光眼镜就能实现3D立体的显示效果。\n\n[0057]同时，蓝色背光还能引发液晶层20中的量子点材料26发射特定波长的圆偏振光，控制量子点材料26的发射波长处于胆甾相液晶25的反射波带中心，从而获得高圆偏振度的圆偏振光，提高3D显示的立体效果。\n\n[0058]本发明实施例中所提供的显示面板1通过对第一基板21和第二基板22 通电，促使第一电极与第二电极之间产生电场，通过电场控制液晶层20中胆甾相液晶25的织构转变，从而实现光开关功能。具体的，如图6所示，当背光模组10开启且液晶层20中胆甾相液晶25处于平面织构时，背光光线经过胆甾相液晶25和量子点材料26的反射，形成特定方向的圆偏振光，显示面板 1呈亮态；如图7所示，当背光模组10关闭且对液晶层20中胆甾相液晶25施加电场时，所述胆甾相液晶25转变为场致向列相，量子点材料26不发光，显示面板1呈暗态。\n\n[0059]如图3所示，所述液晶层20中还包括两层配向层27，所述配向层27分别设于所述第一基板21与所述支撑层23之间和所述第二基板22与所述支撑层23之间。所述配向层27用于使线状的液晶分子沿着固定的方向排列，从而使液晶分子的排列整齐，防止发生漏光现象。\n\n[0060]在本发明的其他实施例中，所述液晶层还可以只设置单层的配向层，其可设于第一基板与支撑层之间或设于第二基板与支撑层之间。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其它实施例，都属于本申请保护的范围。\n\n[0061]本发明实施例中还提供一种显示面板1的制备方法，用以制备如图1所示的显示面板1。所述制备方法的制备流程如图8所示，其包括以下制备步骤：\n\n[0062]步骤S10)制备背光模组10：通过背光制程组装背光源11与光学膜片组12，形成所述背光模组10。\n\n[0063]步骤S20)制备液晶层20：制备第一基板21、第二基板22以及两块配向层27；在一配向层27的一表面上形成一层无机材料，并通过光阻工艺将所述无机材料层图案化，形成支撑层23以及支撑层23中的填充孔24；按照1：4-20 的比例混合量子点材料26和胆甾相液晶25，调配成填充材料，并将所述填充材料通过喷墨打印或注入的方式填充至所述填充孔24中；将另一块配向层27 贴合在所述支撑层23远离第一块配向层27的表面上，然后将第一基板21和第二基板22分别贴合在两块配向层27远离所述支撑层23的一表面上，形成所述液晶层20。\n\n[0064]其中，所述填充材料分为第一墨水和第二墨水，所述第一墨水中胆甾相液晶25的旋向与所述第二墨水中胆甾相液晶25的旋向相反。具体的，所述第一墨水中的为左旋胆甾相液晶251，所述第二墨水中的为右旋胆甾相液晶252。所述第一墨水填充至第一旋向区20A中的填充孔24中，所述第二墨水填充至第二旋向区20B中的填充孔24中。\n\n[0065]所述第一墨水分为红色第一墨水、绿色第一墨水和蓝色第一墨水，所述第二墨水也分为红色第二墨水、绿色第二墨水以及蓝色第二墨水。其中，所述红色第一墨水和所述红色第二墨水中所添加的量子点材料为红色量子点材料 261，所述绿色第一墨水和所述绿色第二墨水中所添加的量子点材料为绿色量子点材料262，所述蓝色第一墨水和所述蓝色第二墨水中所添加的量子点材料为蓝色量子点材料263。\n\n[0066]所述填充孔24分为第一填充孔241、第二填充孔242和第三填充孔243，所述第一填充孔241、所述第二填充孔242和所述第三填充孔243均匀的分布在所述第一旋向区20A和所述第二旋向区20B内。具体的，所述红色第一墨水填充至所述第一旋向区20A内的第一填充孔241中，所述红色第二墨水滴入所述第二旋向区20B内的第一填充孔241中，所述绿色第一墨水填充至所述第一旋向区20A内的第二填充孔242中，所述绿色第二墨水填充至所述第二旋向区 20B内的第二填充孔242中，所述蓝色第一墨水填充至所述第一旋向区20A内的第三填充孔243中。所述蓝色第二墨水填充至所述第二旋向区20B内的第三填充孔243中。\n\n[0067]步骤S30)组装所述背光模组10和所述液晶层20，形成如图1所示的显示面板1。\n\n[0068]本发明实施例中还提供一种三维显示设备，所述三维显示设备包括如上所述的显示面板1以及分光眼镜。本发明实施例中所提供的显示面板1通过填充具有不同旋向的胆甾相液晶25和量子点材料26从而分为能分别产生方向不同的圆偏振光的第一旋向区20A和第二旋向区20B，进而将显示的图像也通过两组不同的旋向的圆偏振光显示出来。所述分光眼镜的左右镜片也分别采用不同偏振方向的偏光镜片。当使用者带上此分光眼睛观看显示面板1时，所述分光眼镜将左、右眼光线分离，从而使观看者左右眼接收到两组画面，再经过大脑混合成立体影像，从而实现3D立体显示。\n\n[0069]本发明实施例中所提供的显示面板去除了现有技术中的偏光调制器件，其通过胆甾相液晶和量子点材便可将显示面板所显示的图像通过不同方向的圆偏振光形成的两组显示画面，简化了3D显示面板的结构，同时还能兼具量子点材料所带来的节能、广色域以及高亮度的特点，优化了3D显示的画面质感。\n\n[0070]虽然在本文中参照了特定的实施方式来描述本发明，但是应该理解的是，这些实施例仅仅是本发明的原理和应用的示例。因此应该理解的是，可以对示例性的实施例进行许多修改，并且可以设计出其他的布置，只要不偏离所附权利要求所限定的本发明的精神和范围。应该理解的是，可以通过不同于原始权利要求所描述的方式来结合不同的从属权利要求和本文中所述的特征。还可以理解的是，结合单独实施例所描述的特征可以使用在其他所述实施例中。');
INSERT INTO `os_patent_instruction_text` VALUES (10964, 24018, '技术领域\n\n[0001]本发明涉及一种显示技术领域，尤指一种柔性显示面板及柔性显示装置。\n\n背景技术\n\n[0002]在现代通信行业中，手机、电视、平板、笔记本、数码相机等产品市场需求越来越大，各种显示设备也正向可弯折发展，产品材料往更大面积、更薄的厚度方向设计。目前在柔性显示面板生产中需要使用一种散热用的复合材料，该新产品/材料在导入阶段，电荷耦合器件(Charge-coupled Device，CCD)频繁出现识别复合材料边缘轮廓异常导致抛料报废(报废率达4％)的问题，造成材料损失及设备生产效率损失，从而导致复合材料需要多次改版，影响新产品导入时程。\n\n[0003]如图1所示，现有的复合材料12在模块贴合制造过程中，当撕除贴附于复合材料12上的保护膜(Protective film，PF)13后，复合材料12的边缘容易发生翘曲变形导致电荷耦合器件(Charge-coupled Device，CCD)4频繁出现识别不明显或异常。具体的，当切割装置/压合装置3欲切除/压合置放在机台11上的复合材料12时，CCD频繁出现识别复合材料12边缘轮廓异常导致抛料报废，造成复合材料12抛料耗损，以及成本、设备生产效率损失与影响新产品导入时程的问题。\n\n发明内容\n\n[0004]本发明的目的，在于提供一种柔性显示面板及柔性显示装置，能够增加散热复合材整体的挺性，降低材料损失成本，提升了设备生产效率与精进新产品导入时程。\n\n[0005]为达到本发明前述目的，本发明提供一种柔性显示面板，包括基板、散热复合材以及挺性金属层，散热复合材设置在所述基板上，所述散热复合材包括撕膜侧及邻接所述撕膜侧的吸附侧。所述散热复合材包括依序层迭设置的网格胶、泡棉、聚酰亚胺及铜箔。挺性金属层设置在所述散热复合材远离所述基板的一侧面上，所述挺性金属层在所述基板上的投影面积大于或等于所述撕膜侧在所述基板上的投影面积。\n\n[0006]优选地，所述挺性金属层的材质包括不锈钢、镍、铬、钼、钢其中之一或其组合。\n\n[0007]优选地，所述挺性金属层设置在所述聚酰亚胺远离所述泡棉的一侧表面并对应所述撕膜侧设置，所述铜箔对应所述吸附侧设置，所述挺性金属层与所述铜箔邻接并同层设置。\n\n[0008]优选地，所述挺性金属层设置在所述铜箔远离所述聚酰亚胺的一侧表面并对应所述撕膜侧设置。\n\n[0009]优选地，所述散热复合材还包括石墨片，所述石墨片设置在所述聚酰亚胺与所述铜箔之间。\n\n[0010]优选地，所述挺性金属层的长度介于25毫米至30毫米之间。\n\n[0011]优选地，所述散热复合材、所述铜箔及所述挺性金属层的厚度介于50微米至100微米之间。\n\n[0012]优选地，所述柔性显示面板还包括涤纶、偏光膜、光学胶及玻璃盖板，所述涤纶设置在所述基板与所述散热复合材之间，所述偏光膜、光学胶及玻璃盖板依序迭设于所述基板远离所述涤纶的一侧表面上。\n\n[0013]优选地，所述基板为有机发光二极管基板。\n\n[0014]本发明还提供一种柔性显示装置，包括如上述的柔性显示面板。\n\n[0015]本发明还具有以下功效，本发明针对现有复合材料抛料损耗的问题，采用一种新的散热复合材，即在散热复合材容易变形的一侧(即设备撕膜侧)，叠设增加一层SS(stainless steel，不锈钢)、镍、铬、钼、钢其中之一或其组合，增加材料整体的挺性，从而避免了散热复合材因撕除保护膜造成的材料翘曲，变形导致的散热复合材边缘轮廓识别不明显或异常，降低抛料报废，提升了设备生产效率，精进新产品导入时程。再者，所述散热复合材还包括石墨片和若干压力感测胶，所述石墨片在模块压合制造过程中，能够增加对散热复合材背面抗挤压或抗热压的效果。所述压力感测胶则能够有效将各层结构顺利贴合一起。\n\n附图说明\n\n[0016]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0017]图1是现有柔性显示面板的复合材料撕除保护膜及电荷耦合器件识别失败的示意图；\n\n[0018]图2是本发明散热复合材设置挺性金属层的横截面示意图；\n\n[0019]图3是本发明散热复合材设置挺性金属层的另一横截面示意图；\n\n[0020]图4是本发明散热复合材设置石墨片的横截面示意图；及\n\n[0021]图5是本发明柔性显示装置的横截面示意图。\n\n具体实施方式\n\n[0022]在具体实施方式中提及“实施例”意指结合实施例描述的特定特征、结构或特性可以包含在本发明的至少一个实施例中。在说明书中的不同位置出现的相同用语并非必然被限制为相同的实施方式，而应当理解为与其它实施例互为独立的或备选的实施方式。在本发明提供的实施例所公开的技术方案启示下，本领域的普通技术人员应理解本发明所描述的实施例可具有其他符合本发明构思的技术方案结合或变化。\n\n[0023]在说明书及权利要求书当中使用了某些词汇来指称特定的组件，所属领域中的技术人员应可理解，制造商可能会用不同的名词来称呼同样的组件。本说明书及权利要求书并不以名称的差异来作为区分组件的方式，而是以组件在功能上的差异来作为区分的基准。下面结合附图和实施例对本发明进行详细说明。\n\n[0024]请参照图2及图3所示，图2为本发明散热复合材设置挺性金属层的横截面示意图；图3为散热复合材设置挺性金属层的另一横截面示意图。如图所示，本发明提供一种柔性显示面板100，包括基板110、散热复合材120以及挺性金属层130。所述基板110例如为有机发光二极管基板。散热复合材120设置在所述基板110上，所述散热复合材120包括撕膜侧121及邻接所述撕膜侧121的吸附侧122。具体而言，撕膜侧121靠近设备轮廓边缘(又称设备撕膜侧)，供撕除保护膜(图略)，吸附侧122则供吸附设备(图略)吸附搬运移动。所述散热复合材120包括依序层迭设置的网格胶123、泡棉124及聚酰亚胺(Polyimide，PI)125以及铜箔126，但并不以此为限。挺性金属层130设置在所述散热复合材120远离所述基板110的一侧面上，所述挺性金属层130在所述基板110上的投影面积大于或等于所述撕膜侧121在所述基板110上的投影面积。\n\n[0025]在本实施例中，所述挺性金属层130的材质优选为不锈钢(SS，stainless steel，不锈钢)或其合金材料，能够增加散热复合材120整体的挺性，避免了散热复合材120因撕除保护膜造成的材料翘曲变形，导致散热复合材120边缘轮廓识别异常的问题，因此，降低抛料报废与成本损失，提升了生产设备效率及精进新产品导入时程。在其他次选的实施例中，所述挺性金属层130的材质也可以是选自镍、铬、钼、钢其中之一或其组合，并不限定。\n\n[0026]在如图2所示的实施例中，所述挺性金属层130设置在所述铜箔126远离所述聚酰亚胺125的一侧表面上并对应所述撕膜侧121设置，如此能够快速增加散热复合材120整体的挺性的作用。然而，在如图3所示的实施例中，所述挺性金属层130设置在所述聚酰亚胺125远离所述泡棉124的一侧表面上并对应所述撕膜侧121设置，所述铜箔126则对应所述吸附侧122设置，使所述挺性金属层130与所述铜箔126邻接并同层设置。如此可以在避免增加整体柔性显示面板100厚度的情况下，有效增加散热复合材120的挺性。如图2及图3所示，所述挺性金属层130的长度L介于25毫米(mm)至30毫米之间，所述散热复合材120、所述铜箔126及所述挺性金属层130的厚度介于50微米(μm)至100微米之间。\n\n[0027]请一并参考图4所示，所述散热复合材120还包括石墨片127和若干压力感测胶(pressure sensitive adhesive,PSA)128，所述石墨片127优选的设置在所述聚酰亚胺125与所述铜箔126之间，其能够增加对散热复合材120背面抗挤压或抗热压的效果。在本实施例中，每一所述压力感测胶128贴附在所述聚酰亚胺125的两相对表面以及所述铜箔126朝向所述石墨片127的一侧表面上，使所述泡棉124、所述聚酰亚胺125、所述石墨片127以及铜箔126彼此固定的层迭在一起。需特别说明的是，在此所述的散热复合材120又称为一种超级复合膜(Super Composite Film，SCF)，能够增加柔性显示面板100的散热或其他适合的效果。\n\n[0028]再者，本发明还提供一种柔性显示装置200，如图5所示。所述柔性显示装置200还包括涤纶(PET树脂)210、偏光膜220、光学胶230及玻璃盖板240等构件。所述涤纶210设置在所述基板110与所述散热复合材120之间，所述偏光膜220、光学胶230及玻璃盖板240依序迭设于所述基板110远离所述涤纶210的一侧表面上。有关所述柔性显示面板100的相关结构与安排，请参考上述实施例所陈，在此不再赘述。\n\n[0029]在如图5所示的实施例中，所述柔性显示面板110例如为有机发光显示器(OLED)。所述柔性显示装置200则能够应用在可穿戴设备例如智能手环、智能手表、虚拟现实(Virtual Reality，VR)设备、移动电话机、电子书/电子报纸、电视机、个人便携电脑、可折叠/可卷曲OLED等的柔性OLED显示及照明装置中。\n\n[0030]本实施例针对现有复合材料抛料损耗的问题，采用一种新的散热复合材，即在散热复合材容易变形的一侧(即设备撕膜侧)，叠设增加一层SS(stainless steel，不锈钢)、镍、铬、钼、钢其中之一或其组合，增加材料整体的挺性，从而避免了散热复合材因撕除保护膜造成的材料翘曲，变形导致的散热复合材边缘轮廓识别不明显或异常，降低抛料报废，提升了设备生产效率，精进新产品导入时程。再者，所述散热复合材还包括石墨片和若干压力感测胶，所述石墨片在模块压合制造过程中，能够增加对散热复合材背面抗挤压或抗热压的效果。所述压力感测胶则能够有效将各层结构顺利贴合一起。\n\n[0031]综上所述，虽然本发明结合其具体实施例而被描述，应该理解的是，许多替代、修改及变化对于那些本领域的技术人员将是显而易见的。因此，其意在包含落入所附权利要求书的范围内的所有替代、修改及变化。', '技术领域\n\n[0001]本发明涉及一种显示技术领域，尤指一种柔性显示面板及柔性显示装置。\n\n背景技术\n\n[0002]在现代通信行业中，手机、电视、平板、笔记本、数码相机等产品市场需求越来越大，各种显示设备也正向可弯折发展，产品材料往更大面积、更薄的厚度方向设计。目前在柔性显示面板生产中需要使用一种散热用的复合材料，该新产品/材料在导入阶段，电荷耦合器件(Charge-coupled Device，CCD)频繁出现识别复合材料边缘轮廓异常导致抛料报废(报废率达4％)的问题，造成材料损失及设备生产效率损失，从而导致复合材料需要多次改版，影响新产品导入时程。\n\n[0003]如图1所示，现有的复合材料12在模块贴合制造过程中，当撕除贴附于复合材料12上的保护膜(Protective film，PF)13后，复合材料12的边缘容易发生翘曲变形导致电荷耦合器件(Charge-coupled Device，CCD)4频繁出现识别不明显或异常。具体的，当切割装置/压合装置3欲切除/压合置放在机台11上的复合材料12时，CCD频繁出现识别复合材料12边缘轮廓异常导致抛料报废，造成复合材料12抛料耗损，以及成本、设备生产效率损失与影响新产品导入时程的问题。\n\n发明内容\n\n[0004]本发明的目的，在于提供一种柔性显示面板及柔性显示装置，能够增加散热复合材整体的挺性，降低材料损失成本，提升了设备生产效率与精进新产品导入时程。\n\n[0005]为达到本发明前述目的，本发明提供一种柔性显示面板，包括基板、散热复合材以及挺性金属层，散热复合材设置在所述基板上，所述散热复合材包括撕膜侧及邻接所述撕膜侧的吸附侧。所述散热复合材包括依序层迭设置的网格胶、泡棉、聚酰亚胺及铜箔。挺性金属层设置在所述散热复合材远离所述基板的一侧面上，所述挺性金属层在所述基板上的投影面积大于或等于所述撕膜侧在所述基板上的投影面积。\n\n[0006]优选地，所述挺性金属层的材质包括不锈钢、镍、铬、钼、钢其中之一或其组合。\n\n[0007]优选地，所述挺性金属层设置在所述聚酰亚胺远离所述泡棉的一侧表面并对应所述撕膜侧设置，所述铜箔对应所述吸附侧设置，所述挺性金属层与所述铜箔邻接并同层设置。\n\n[0008]优选地，所述挺性金属层设置在所述铜箔远离所述聚酰亚胺的一侧表面并对应所述撕膜侧设置。\n\n[0009]优选地，所述散热复合材还包括石墨片，所述石墨片设置在所述聚酰亚胺与所述铜箔之间。\n\n[0010]优选地，所述挺性金属层的长度介于25毫米至30毫米之间。\n\n[0011]优选地，所述散热复合材、所述铜箔及所述挺性金属层的厚度介于50微米至100微米之间。\n\n[0012]优选地，所述柔性显示面板还包括涤纶、偏光膜、光学胶及玻璃盖板，所述涤纶设置在所述基板与所述散热复合材之间，所述偏光膜、光学胶及玻璃盖板依序迭设于所述基板远离所述涤纶的一侧表面上。\n\n[0013]优选地，所述基板为有机发光二极管基板。\n\n[0014]本发明还提供一种柔性显示装置，包括如上述的柔性显示面板。\n\n[0015]本发明还具有以下功效，本发明针对现有复合材料抛料损耗的问题，采用一种新的散热复合材，即在散热复合材容易变形的一侧(即设备撕膜侧)，叠设增加一层SS(stainless steel，不锈钢)、镍、铬、钼、钢其中之一或其组合，增加材料整体的挺性，从而避免了散热复合材因撕除保护膜造成的材料翘曲，变形导致的散热复合材边缘轮廓识别不明显或异常，降低抛料报废，提升了设备生产效率，精进新产品导入时程。再者，所述散热复合材还包括石墨片和若干压力感测胶，所述石墨片在模块压合制造过程中，能够增加对散热复合材背面抗挤压或抗热压的效果。所述压力感测胶则能够有效将各层结构顺利贴合一起。\n\n附图说明\n\n[0016]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0017]图1是现有柔性显示面板的复合材料撕除保护膜及电荷耦合器件识别失败的示意图；\n\n[0018]图2是本发明散热复合材设置挺性金属层的横截面示意图；\n\n[0019]图3是本发明散热复合材设置挺性金属层的另一横截面示意图；\n\n[0020]图4是本发明散热复合材设置石墨片的横截面示意图；及\n\n[0021]图5是本发明柔性显示装置的横截面示意图。\n\n具体实施方式\n\n[0022]在具体实施方式中提及“实施例”意指结合实施例描述的特定特征、结构或特性可以包含在本发明的至少一个实施例中。在说明书中的不同位置出现的相同用语并非必然被限制为相同的实施方式，而应当理解为与其它实施例互为独立的或备选的实施方式。在本发明提供的实施例所公开的技术方案启示下，本领域的普通技术人员应理解本发明所描述的实施例可具有其他符合本发明构思的技术方案结合或变化。\n\n[0023]在说明书及权利要求书当中使用了某些词汇来指称特定的组件，所属领域中的技术人员应可理解，制造商可能会用不同的名词来称呼同样的组件。本说明书及权利要求书并不以名称的差异来作为区分组件的方式，而是以组件在功能上的差异来作为区分的基准。下面结合附图和实施例对本发明进行详细说明。\n\n[0024]请参照图2及图3所示，图2为本发明散热复合材设置挺性金属层的横截面示意图；图3为散热复合材设置挺性金属层的另一横截面示意图。如图所示，本发明提供一种柔性显示面板100，包括基板110、散热复合材120以及挺性金属层130。所述基板110例如为有机发光二极管基板。散热复合材120设置在所述基板110上，所述散热复合材120包括撕膜侧121及邻接所述撕膜侧121的吸附侧122。具体而言，撕膜侧121靠近设备轮廓边缘(又称设备撕膜侧)，供撕除保护膜(图略)，吸附侧122则供吸附设备(图略)吸附搬运移动。所述散热复合材120包括依序层迭设置的网格胶123、泡棉124及聚酰亚胺(Polyimide，PI)125以及铜箔126，但并不以此为限。挺性金属层130设置在所述散热复合材120远离所述基板110的一侧面上，所述挺性金属层130在所述基板110上的投影面积大于或等于所述撕膜侧121在所述基板110上的投影面积。\n\n[0025]在本实施例中，所述挺性金属层130的材质优选为不锈钢(SS，stainless steel，不锈钢)或其合金材料，能够增加散热复合材120整体的挺性，避免了散热复合材120因撕除保护膜造成的材料翘曲变形，导致散热复合材120边缘轮廓识别异常的问题，因此，降低抛料报废与成本损失，提升了生产设备效率及精进新产品导入时程。在其他次选的实施例中，所述挺性金属层130的材质也可以是选自镍、铬、钼、钢其中之一或其组合，并不限定。\n\n[0026]在如图2所示的实施例中，所述挺性金属层130设置在所述铜箔126远离所述聚酰亚胺125的一侧表面上并对应所述撕膜侧121设置，如此能够快速增加散热复合材120整体的挺性的作用。然而，在如图3所示的实施例中，所述挺性金属层130设置在所述聚酰亚胺125远离所述泡棉124的一侧表面上并对应所述撕膜侧121设置，所述铜箔126则对应所述吸附侧122设置，使所述挺性金属层130与所述铜箔126邻接并同层设置。如此可以在避免增加整体柔性显示面板100厚度的情况下，有效增加散热复合材120的挺性。如图2及图3所示，所述挺性金属层130的长度L介于25毫米(mm)至30毫米之间，所述散热复合材120、所述铜箔126及所述挺性金属层130的厚度介于50微米(μm)至100微米之间。\n\n[0027]请一并参考图4所示，所述散热复合材120还包括石墨片127和若干压力感测胶(pressure sensitive adhesive,PSA)128，所述石墨片127优选的设置在所述聚酰亚胺125与所述铜箔126之间，其能够增加对散热复合材120背面抗挤压或抗热压的效果。在本实施例中，每一所述压力感测胶128贴附在所述聚酰亚胺125的两相对表面以及所述铜箔126朝向所述石墨片127的一侧表面上，使所述泡棉124、所述聚酰亚胺125、所述石墨片127以及铜箔126彼此固定的层迭在一起。需特别说明的是，在此所述的散热复合材120又称为一种超级复合膜(Super Composite Film，SCF)，能够增加柔性显示面板100的散热或其他适合的效果。\n\n[0028]再者，本发明还提供一种柔性显示装置200，如图5所示。所述柔性显示装置200还包括涤纶(PET树脂)210、偏光膜220、光学胶230及玻璃盖板240等构件。所述涤纶210设置在所述基板110与所述散热复合材120之间，所述偏光膜220、光学胶230及玻璃盖板240依序迭设于所述基板110远离所述涤纶210的一侧表面上。有关所述柔性显示面板100的相关结构与安排，请参考上述实施例所陈，在此不再赘述。\n\n[0029]在如图5所示的实施例中，所述柔性显示面板110例如为有机发光显示器(OLED)。所述柔性显示装置200则能够应用在可穿戴设备例如智能手环、智能手表、虚拟现实(Virtual Reality，VR)设备、移动电话机、电子书/电子报纸、电视机、个人便携电脑、可折叠/可卷曲OLED等的柔性OLED显示及照明装置中。\n\n[0030]本实施例针对现有复合材料抛料损耗的问题，采用一种新的散热复合材，即在散热复合材容易变形的一侧(即设备撕膜侧)，叠设增加一层SS(stainless steel，不锈钢)、镍、铬、钼、钢其中之一或其组合，增加材料整体的挺性，从而避免了散热复合材因撕除保护膜造成的材料翘曲，变形导致的散热复合材边缘轮廓识别不明显或异常，降低抛料报废，提升了设备生产效率，精进新产品导入时程。再者，所述散热复合材还包括石墨片和若干压力感测胶，所述石墨片在模块压合制造过程中，能够增加对散热复合材背面抗挤压或抗热压的效果。所述压力感测胶则能够有效将各层结构顺利贴合一起。\n\n[0031]综上所述，虽然本发明结合其具体实施例而被描述，应该理解的是，许多替代、修改及变化对于那些本领域的技术人员将是显而易见的。因此，其意在包含落入所附权利要求书的范围内的所有替代、修改及变化。');
INSERT INTO `os_patent_instruction_text` VALUES (10965, 24019, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管显示面板及其制备方法、显示装置。\n\n背景技术\n\n[0002]近年来，OLED(Organic Light Emitting Diode，有机发光二极管)显示技术、MLED(Mini/Micro Light Emitting Diode，微发光二极管)显示技术等新型显示技术进入高速发展阶段，相较传统的LCD(Liquid Crystal Display，液晶显示器)显示技术，OLED和MLED具有低功耗、高色域、高亮度等显示优势。\n\n[0003]在MLED显示技术中，涉及到TFT(Thin Film Transistor，薄膜晶体管)背板技术和后段MLED芯片转移技术，在转移过程中，一般采用ACF(Anisotropic Conductive Film，异方性导电胶膜)将MLED芯片贴附到TFT背板上的绑定电极上，而ACF需要整面进行挤压，使得ACF中的导电金球聚集，从而实现MLED芯片与TFT背板电连接。但是，受机台平整度以及面内的MLED芯片的绑定电极的地形低的影响，容易导致绑定电极和面内走线短路，也可能造成ACF导电性能不良，影响产品良率。故，有必要改善这一缺陷。\n\n发明内容\n\n[0004]本发明实施例提供一种微发光二极管显示面板，用于解决由于现有技术的微发光二极管显示面板面内的微发光二极管芯片的绑定电极的地形低，导致在转移过程中容易出现绑定电极和面内走线短路以及异方性导电胶膜导电性能不良，影响产品良率的技术问题。\n\n[0005]本发明实施例提供一种微发光二极管显示面板，包括衬底基板、第一金属层、钝化层以及第二金属层；所述第一金属层位于所述衬底基板之上，包括源极、漏极以及电源线；所述钝化层位于所述第一金属层之上，包括位于所述源极之上的第一过孔和位于所述电源线之上的第二过孔；所述第二金属层位于所述钝化层之上，包括第一绑定电极和第二绑定电极，所述第一绑定电极通过所述第一过孔与所述源极电连接，所述第二绑定电极通过所述第二过孔与所述电源线电连接；其中，所述第一过孔和所述第二过孔内均设置有支撑柱。\n\n[0006]在本发明实施例提供的微发光二极管显示面板中，所述微发光二极管显示面板还包括微发光二极管芯片，所述微发光二极管芯片通过异方性导电胶膜分别与所述第一绑定电极、所述第二绑定电极电连接。\n\n[0007]在本发明实施例提供的微发光二极管显示面板中，所述支撑柱的高度大于或等于3微米，且小于或等于10微米。\n\n[0008]在本发明实施例提供的微发光二极管显示面板中，所述支撑柱的高度均一。\n\n[0009]在本发明实施例提供的微发光二极管显示面板中，所述支撑柱的材料为有机光阻材料。\n\n[0010]在本发明实施例提供的微发光二极管显示面板中，所述支撑柱的横截面形状为矩形或圆形。\n\n[0011]在本发明实施例提供的微发光二极管显示面板中，所述支撑柱的纵截面形状为矩形或梯形。\n\n[0012]在本发明实施例提供的微发光二极管显示面板中，位于相邻的一个所述第一过孔和一个所述第二过孔内的两个所述支撑柱组成支撑部，所述支撑部等间距分布。\n\n[0013]本发明实施例提供一种微发光二极管显示面板的制备方法，包括步骤：提供一衬底基板；在所述衬底基板之上制备第一金属层并图案化，形成源极、漏极以及电源线；在所述第一金属层之上制备钝化层并蚀刻第一过孔和第二过孔，所述第一过孔位于所述源极之上，所述第二过孔位于所述电源线之上；在所述第一过孔和所述第二过孔内制备支撑柱；在所述钝化层和所述支撑柱之上制备第二金属层并图案化，形成第一绑定电极和第二绑定电极，所述第一绑定电极通过所述第一过孔与所述源极电连接，所述第二绑定电极通过所述第二过孔与所述电源线电连接。\n\n[0014]本发明实施例还提供一种显示装置，包括上述的微发光二极管显示面板。\n\n[0015]有益效果：本发明实施例提供的一种微发光二极管显示面板，包括衬底基板、第一金属层、钝化层以及第二金属层；第一金属层位于衬底基板之上，包括源极、漏极以及电源线；钝化层位于第一金属层之上，包括位于源极之上的第一过孔和位于电源线之上的第二过孔；第二金属层位于钝化层之上，包括第一绑定电极和第二绑定电极，第一绑定电极通过第一过孔与源极电连接，第二绑定电极通过第二过孔与电源线电连接；其中，第一过孔和第二过孔内均设置有支撑柱。本发明通过在钝化层上设置第一过孔和第二过孔，然后在第一过孔和第二过孔内设置支撑柱，再在支撑柱之上设置第一绑定电极、第二绑定电极，通过支撑柱增加第一绑定电极、第二绑定电极的高度，当进行转移制程时，机台仅与位于第一绑定电极、第二绑定电极之上的异方性导电胶膜接触，避免面内其他位置发生热压短路，从而提高微发光二极管芯片的转移良率。\n\n附图说明\n\n[0016]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。\n\n[0017]图1是本发明实施例提供的微发光二极管显示面板的基本结构示意图。\n\n[0018]图2是本发明实施例提供的支撑柱的排布方式的俯视图。\n\n[0019]图3是本发明实施例提供的微发光二极管显示面板的制备方法流程图。\n\n具体实施方式\n\n[0020]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。在附图中，为了清晰及便于理解和描述，附图中绘示的组件的尺寸和厚度并未按照比例。\n\n[0021]如图1所示，为本发明实施例提供的微发光二极管显示面板的基本结构示意图，所述微发光二极管显示面板包括衬底基板10、第一金属层17、钝化层18以及第二金属层20；所述第一金属层17位于所述衬底基板10之上，包括源极172、漏极171以及电源线173；所述钝化层18位于所述第一金属层17之上，包括位于所述源极172之上的第一过孔181和位于所述电源线173之上的第二过孔182；所述第二金属层20位于所述钝化层18之上，包括第一绑定电极201和第二绑定电极202，所述第一绑定电极201通过所述第一过孔181与所述源极172电连接，所述第二绑定电极202通过所述第二过孔182与所述电源线173电连接；其中，所述第一过孔181和所述第二过孔182内均设置有支撑柱19。\n\n[0022]其中，所述微发光二极管显示面板还包括微发光二极管芯片22，所述微发光二极管芯片22通过异方性导电胶膜21分别与所述第一绑定电极201、所述第二绑定电极202电连接。\n\n[0023]可以理解的是，微发光二极管显示面板指的是通过设置多个微发光二极管芯片22(图1中仅绘示一个微发光二极管芯片22为例进行说明)，通过TFT背板直接驱动多个微发光二极管芯片22发光来显示图像，与液晶显示面板相比，省略了背光模组、液晶层和彩膜基板，不仅更加轻薄，而且发光效率高、亮度高。但微发光二极管显示面板的微发光二极管芯片22需要进行转移制程与TFT背板电连接，微发光二极管芯片22是通过异方性导电胶膜21与TFT背板上的微发光二极管芯片的第一绑定电极201、第二绑定电极202粘连，异方性导电胶膜21为整面贴附，通过挤压异方性导电胶膜21，使得异方性导电胶膜21内的导电金球211聚集，从而产生导电通道，使得TFT背板上的电信号通过所述导电通道传输至微发光二极管芯片22，从而使微发光二极管芯片22按照相应的驱动电压发光。\n\n[0024]由于现有技术的TFT背板上的微发光二极管芯片的绑定电极的地形低，导致在挤压异方性导电胶膜时，机台不仅与绑定电极处的异方性导电胶膜接触，还会与其他无需绑定微发光二极管芯片的位置接触，由于机台并不平整，使得在热压过程中，容易导致面内其他金属走线(例如电源线的正极、数据线或存在跨线的区域)短路，也可能导致微发光二极管芯片的两个绑定电极之间短路，使得微发光二极管芯片的转移良率低，导致生产成本上升。本发明通过在第一绑定电极201和第二绑定电极202之下设置支撑柱19，所述支撑柱19可以增加所述第一绑定电极201和所述第二绑定电极202的高度，使得所述第一绑定电极201和所述第二绑定电极202与微发光二极管显示面板的其他区域存在一定的高度差，当进行热压制程时，机台仅仅与所述第一绑定电极201和所述第二绑定电极202上方的异方性导电胶膜21接触，不与其他无需绑定微发光二极管芯片22的区域接触，不会造成面内其他金属走线短路，也不与所述第一绑定电极201和所述第二绑定电极202的侧面的异方性导电胶膜21接触，不会造成所述第一绑定电极201和所述第二绑定电极202短路，大大提高了微发光二极管芯片22的转移良率。\n\n[0025]需要说明的是，所述支撑柱19的横截面积要分别小于所述第一过孔181和所述第二过孔182的横截面积，即所述支撑柱19的外壁与所述第一过孔181和所述第二过孔182的内壁无接触，可使得后续制备第一绑定电极201和第二绑定电极202时，第一绑定电极201可通过所述支撑柱19与所述第一过孔181之间的间隙与其下方的所述源极172电连接，所述第二绑定电极202可通过所述支撑柱19与所述第二过孔182之间的间隙与其下方的所述电源线173电连接。\n\n[0026]在一种实施例中，所述支撑柱19的高度大于或等于3微米，且小于或等于10微米。可以理解的是，当所述支撑柱19的高度在3微米至10微米之间时，既可以使第一绑定电极201和第二绑定电极202与钝化层18之间具有一定的高度差，避免热压造成短路，多出的高度差正好可以设置遮光层(图未示)，以防止相邻的微发光二极管芯片22之间出光颜色发生串扰，又可以为下方的有源层13遮光，不仅提高了对比度，还避免了TFT背板的有源层13受光照影响导致阈值电压不稳定。\n\n[0027]在一种实施例中，所述支撑柱19的高度均一。可以理解的是，所述支撑柱分别用于支撑第一绑定电极201和第二绑定电极202，当所述支撑柱19的高度均一时，所述第一绑定电极201和所述第二绑定电极202的高度也一致，当转移微发光二极管芯片22时，所受的挤压力比较均一，以免挤压力度不均造成的异方性导电胶膜21导电性能不良。\n\n[0028]在一种实施例中，所述支撑柱19的材料为有机光阻材料，具体的，所述支撑柱19可以通过掩膜板经曝光、显影形成相应的图案。\n\n[0029]在一种实施例中，所述支撑柱19的横截面形状为矩形或圆形，所述支撑柱19的纵截面形状为矩形或梯形。具体的，图1中仅以所述支撑柱19的纵截面形状为梯形为例进行说明，其他的形状未图示。可以理解的是，当所述支撑柱19的横截面形状为矩形，纵截面形状为矩形时，所述支撑柱19整体呈一个四棱柱；当所述支撑柱19的横截面形状为矩形，纵截面形状为梯形时，所述支撑柱19整体呈一个四棱台；当所述支撑柱19的横截面形状为圆形，纵截面形状为矩形时，所述支撑柱19整体呈一个圆柱；当所述支撑柱19的横截面形状为圆形，纵截面形状为梯形时，所述支撑柱19整体呈一个圆台。\n\n[0030]在一种实施例中，位于相邻的一个所述第一过孔181和一个所述第二过孔182内的两个所述支撑柱19组成支撑部23(如图2)，所述支撑部23等间距分布。具体的，请参阅图2，为本发明实施例提供的支撑柱的排布方式的俯视图，可以理解的是，一个微发光二极管芯片22(如图1)对应相邻的两个支撑柱19，即对应一个支撑部23，本发明实施例通过将支撑部23设置为等间距分布，即所述微发光二极管芯片22也是等间距分布，使得出光更均匀，提高了微发光二极管显示面板的显示效果。\n\n[0031]继续参阅图1，在一种实施例中，所述微发光二极管芯片22的厚度大于或等于4微米，且小于或等于8微米。所述异方性导电胶膜21的厚度大于或等于4微米，且小于或等于8微米。所述异方性导电胶膜21的厚度与所述微发光二极管芯片22的厚度一致。具体的，例如所述异方性导电胶膜21的厚度与所述微发光二极管芯片22的厚度均为6微米。可以理解的是，当所述异方性导电胶膜21的厚度与所述微发光二极管芯片22的厚度一致时，由于微发光二极管芯片22的下方还设置有支撑柱19，无论所述微发光二极管芯片22经热压后是否完全陷入所述异方性导电胶膜21中，所述微发光二极管芯片22所处的高度都会高于其他未设置支撑柱19的区域的高度，即可以避免面内其他位置发生热压短路，从而提高微发光二极管芯片22的转移良率。\n\n[0032]在一种实施例中，所述微发光二极管显示面板还包括位于所述衬底基板10上的遮光金属层11、位于所述遮光金属层11上的缓冲层12、位于所述缓冲层12上的有源层13、位于所述有源层13上的栅极绝缘层14、位于所述栅极绝缘层14和所述缓冲层12上的第三金属层15以及位于所述第三金属层15上的层间绝缘层16，其中，所述第三金属层15包括位于所述栅极绝缘层14上的栅极151以及位于所述缓冲层12上的栅线152、153。\n\n[0033]接下来，请参阅图3，为本发明实施例提供的微发光二极管显示面板的制备方法流程图，所述制备方法包括步骤：\n\n[0034]S1、提供一衬底基板；\n\n[0035]S2、在所述衬底基板之上制备第一金属层并图案化，形成源极、漏极以及电源线；\n\n[0036]S3、在所述第一金属层之上制备钝化层并蚀刻第一过孔和第二过孔，所述第一过孔位于所述源极之上，所述第二过孔位于所述电源线之上；\n\n[0037]S4、在所述第一过孔和所述第二过孔内制备支撑柱；\n\n[0038]S5、在所述钝化层和所述支撑柱之上制备第二金属层并图案化，形成第一绑定电极和第二绑定电极，所述第一绑定电极通过所述第一过孔与所述源极电连接，所述第二绑定电极通过所述第二过孔与所述电源线电连接。\n\n[0039]需要说明的是，所述支撑柱的横截面积要分别小于所述第一过孔和所述第二过孔的横截面积，即所述支撑柱的外壁与所述第一过孔和所述第二过孔的内壁无接触，可使得后续制备第一绑定电极和第二绑定电极时，第一绑定电极可通过所述支撑柱与所述第一过孔之间的间隙与其下方的所述源极电连接，所述第二绑定电极可通过所述支撑柱与所述第二过孔之间的间隙与其下方的所述电源线电连接。\n\n[0040]其中，所述制备方法还包括步骤：在所述第二金属层之上绑定微发光二极管芯片，所述微发光二极管芯片通过异方性导电胶膜分别与所述第一绑定电极、所述第二绑定电极电连接。具体的，微发光二极管芯片需要进行转移制程与TFT背板电连接，微发光二极管芯片是通过异方性导电胶膜与TFT背板上的第一绑定电极、第二绑定电极粘连，异方性导电胶膜为整面贴附，通过挤压异方性导电胶膜，使得异方性导电胶膜内的导电金球聚集，从而产生导电通道，使得TFT背板上的电信号通过所述导电通道传输至微发光二极管芯片，从而使微发光二极管芯片按照相应的驱动电压发光。\n\n[0041]可以理解的是，本发明通过在第一过孔和第二过孔内制备支撑柱，所述支撑柱可以增加所述第一绑定电极和所述第二绑定电极的高度，使得所述第一绑定电极和所述第二绑定电极与微发光二极管显示面板的其他区域存在一定的高度差，当进行热压制程时，机台仅仅与所述第一绑定电极和所述第二绑定电极上方的异方性导电胶膜接触，不与其他无需绑定微发光二极管芯片的区域接触，不会造成面内其他金属走线短路，也不与所述第一绑定电极和所述第二绑定电极的侧面的异方性导电胶膜接触，不会造成所述第一绑定电极和所述第二绑定电极短路，大大提高了微发光二极管芯片的转移良率。\n\n[0042]在一种实施例中，所述支撑柱的高度大于或等于3微米，且小于或等于10微米。可以理解的是，当所述支撑柱的高度在3微米至10微米之间时，既可以使第一绑定电极和第二绑定电极与钝化层之间具有一定的高度差，避免热压造成短路，多出的高度差正好可以制备遮光层，以防止相邻的微发光二极管芯片之间出光颜色发生串扰。\n\n[0043]在一种实施例中，所述支撑柱的高度均一。可以理解的是，所述支撑柱分别用于支撑第一绑定电极和第二绑定电极，当所述支撑柱的高度均一时，所述第一绑定电极和所述第二绑定电极的高度也一致，当转移微发光二极管芯片时，所受的挤压力比较均一，以免挤压力度不均造成的异方性导电胶膜导电性能不良。\n\n[0044]在一种实施例中，所述支撑柱的材料为有机光阻材料，具体的，所述支撑柱可以通过掩膜板经曝光、显影形成相应的图案。\n\n[0045]在一种实施例中，所述支撑柱的横截面形状为矩形或圆形，所述支撑柱的纵截面形状为矩形或梯形。可以理解的是，当所述支撑柱的横截面形状为矩形，纵截面形状为矩形时，所述支撑柱整体呈一个四棱柱；当所述支撑柱的横截面形状为矩形，纵截面形状为梯形时，所述支撑柱整体呈一个四棱台；当所述支撑柱的横截面形状为圆形，纵截面形状为矩形时，所述支撑柱整体呈一个圆柱；当所述支撑柱的横截面形状为圆形，纵截面形状为梯形时，所述支撑柱整体呈一个圆台。\n\n[0046]在一种实施例中，位于相邻的一个所述第一过孔和一个所述第二过孔内的两个所述支撑柱组成支撑部，所述支撑部等间距分布。可以理解的是，一个微发光二极管芯片对应相邻的两个支撑柱，即对应一个支撑部，本发明实施例通过将支撑部设置为等间距分布，即所述微发光二极管芯片也是等间距分布，使得出光更均匀，提高了微发光二极管显示面板的显示效果。\n\n[0047]在一种实施例中，所述微发光二极管芯片的厚度大于或等于4微米，且小于或等于8微米。所述异方性导电胶膜的厚度大于或等于4微米，且小于或等于8微米。所述异方性导电胶膜的厚度与所述微发光二极管芯片的厚度一致。具体的，例如所述异方性导电胶膜的厚度与所述微发光二极管芯片的厚度均为6微米。可以理解的是，当所述异方性导电胶膜的厚度与所述微发光二极管芯片的厚度一致时，由于微发光二极管芯片的下方还设置有支撑柱，无论所述微发光二极管芯片经热压后是否完全陷入所述异方性导电胶膜中，所述微发光二极管芯片所处的高度都会高于其他未设置支撑柱的区域的高度，即可以避免面内其他位置发生热压短路，从而提高微发光二极管芯片的转移良率。\n\n[0048]在一种实施例中，所述步骤S1与所述步骤S2之间还包括：在所述衬底基板上制备遮光金属层；在所述遮光金属层上制备缓冲层；在所述缓冲层上制备有源层；在所述有源层上制备栅极绝缘层；在所述栅极绝缘层和所述缓冲层上制备第三金属层并图案化，形成位于所述栅极绝缘层上的栅极和位于所述缓冲层上的栅线；在所述第三金属层上制备层间绝缘层。\n\n[0049]本发明实施例还提供一种显示装置，包括上述的微发光二极管显示面板以及盖板，所述微发光二极管显示面板的结构及制备方法请参阅图1至图3及相关描述，此处不再赘述。本发明实施例提供的显示装置可以为：手机、平板电脑、笔记本电脑、数码相机、导航仪等具有显示功能的产品或部件。\n\n[0050]综上所述，本发明实施例提供的一种微发光二极管显示面板，包括衬底基板、第一金属层、钝化层以及第二金属层；第一金属层位于衬底基板之上，包括源极、漏极以及电源线；钝化层位于第一金属层之上，包括位于源极之上的第一过孔和位于电源线之上的第二过孔；第二金属层位于钝化层之上，包括第一绑定电极和第二绑定电极，第一绑定电极通过第一过孔与源极电连接，第二绑定电极通过第二过孔与电源线电连接；其中，第一过孔和第二过孔内均设置有支撑柱。本发明通过在钝化层上设置第一过孔和第二过孔，然后在第一过孔和第二过孔内设置支撑柱，再在支撑柱之上设置第一绑定电极、第二绑定电极，通过支撑柱增加第一绑定电极、第二绑定电极的高度，当进行转移制程时，机台仅与位于第一绑定电极、第二绑定电极之上的异方性导电胶膜接触，避免面内其他位置发生热压短路，从而提高微发光二极管芯片的转移良率，解决了由于现有技术的微发光二极管显示面板面内的微发光二极管芯片的绑定电极的地形低，导致在转移过程中容易出现绑定电极和面内走线短路以及异方性导电胶膜导电性能不良，影响产品良率的技术问题。\n\n[0051]以上对本发明实施例所提供的一种微发光二极管显示面板及其制备方法、显示装置进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种微发光二极管显示面板及其制备方法、显示装置。\n\n背景技术\n\n[0002]近年来，OLED(Organic Light Emitting Diode，有机发光二极管)显示技术、MLED(Mini/Micro Light Emitting Diode，微发光二极管)显示技术等新型显示技术进入高速发展阶段，相较传统的LCD(Liquid Crystal Display，液晶显示器)显示技术，OLED和MLED具有低功耗、高色域、高亮度等显示优势。\n\n[0003]在MLED显示技术中，涉及到TFT(Thin Film Transistor，薄膜晶体管)背板技术和后段MLED芯片转移技术，在转移过程中，一般采用ACF(Anisotropic Conductive Film，异方性导电胶膜)将MLED芯片贴附到TFT背板上的绑定电极上，而ACF需要整面进行挤压，使得ACF中的导电金球聚集，从而实现MLED芯片与TFT背板电连接。但是，受机台平整度以及面内的MLED芯片的绑定电极的地形低的影响，容易导致绑定电极和面内走线短路，也可能造成ACF导电性能不良，影响产品良率。故，有必要改善这一缺陷。\n\n发明内容\n\n[0004]本发明实施例提供一种微发光二极管显示面板，用于解决由于现有技术的微发光二极管显示面板面内的微发光二极管芯片的绑定电极的地形低，导致在转移过程中容易出现绑定电极和面内走线短路以及异方性导电胶膜导电性能不良，影响产品良率的技术问题。\n\n[0005]本发明实施例提供一种微发光二极管显示面板，包括衬底基板、第一金属层、钝化层以及第二金属层；所述第一金属层位于所述衬底基板之上，包括源极、漏极以及电源线；所述钝化层位于所述第一金属层之上，包括位于所述源极之上的第一过孔和位于所述电源线之上的第二过孔；所述第二金属层位于所述钝化层之上，包括第一绑定电极和第二绑定电极，所述第一绑定电极通过所述第一过孔与所述源极电连接，所述第二绑定电极通过所述第二过孔与所述电源线电连接；其中，所述第一过孔和所述第二过孔内均设置有支撑柱。\n\n[0006]在本发明实施例提供的微发光二极管显示面板中，所述微发光二极管显示面板还包括微发光二极管芯片，所述微发光二极管芯片通过异方性导电胶膜分别与所述第一绑定电极、所述第二绑定电极电连接。\n\n[0007]在本发明实施例提供的微发光二极管显示面板中，所述支撑柱的高度大于或等于3微米，且小于或等于10微米。\n\n[0008]在本发明实施例提供的微发光二极管显示面板中，所述支撑柱的高度均一。\n\n[0009]在本发明实施例提供的微发光二极管显示面板中，所述支撑柱的材料为有机光阻材料。\n\n[0010]在本发明实施例提供的微发光二极管显示面板中，所述支撑柱的横截面形状为矩形或圆形。\n\n[0011]在本发明实施例提供的微发光二极管显示面板中，所述支撑柱的纵截面形状为矩形或梯形。\n\n[0012]在本发明实施例提供的微发光二极管显示面板中，位于相邻的一个所述第一过孔和一个所述第二过孔内的两个所述支撑柱组成支撑部，所述支撑部等间距分布。\n\n[0013]本发明实施例提供一种微发光二极管显示面板的制备方法，包括步骤：提供一衬底基板；在所述衬底基板之上制备第一金属层并图案化，形成源极、漏极以及电源线；在所述第一金属层之上制备钝化层并蚀刻第一过孔和第二过孔，所述第一过孔位于所述源极之上，所述第二过孔位于所述电源线之上；在所述第一过孔和所述第二过孔内制备支撑柱；在所述钝化层和所述支撑柱之上制备第二金属层并图案化，形成第一绑定电极和第二绑定电极，所述第一绑定电极通过所述第一过孔与所述源极电连接，所述第二绑定电极通过所述第二过孔与所述电源线电连接。\n\n[0014]本发明实施例还提供一种显示装置，包括上述的微发光二极管显示面板。\n\n[0015]有益效果：本发明实施例提供的一种微发光二极管显示面板，包括衬底基板、第一金属层、钝化层以及第二金属层；第一金属层位于衬底基板之上，包括源极、漏极以及电源线；钝化层位于第一金属层之上，包括位于源极之上的第一过孔和位于电源线之上的第二过孔；第二金属层位于钝化层之上，包括第一绑定电极和第二绑定电极，第一绑定电极通过第一过孔与源极电连接，第二绑定电极通过第二过孔与电源线电连接；其中，第一过孔和第二过孔内均设置有支撑柱。本发明通过在钝化层上设置第一过孔和第二过孔，然后在第一过孔和第二过孔内设置支撑柱，再在支撑柱之上设置第一绑定电极、第二绑定电极，通过支撑柱增加第一绑定电极、第二绑定电极的高度，当进行转移制程时，机台仅与位于第一绑定电极、第二绑定电极之上的异方性导电胶膜接触，避免面内其他位置发生热压短路，从而提高微发光二极管芯片的转移良率。\n\n附图说明\n\n[0016]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。\n\n[0017]图1是本发明实施例提供的微发光二极管显示面板的基本结构示意图。\n\n[0018]图2是本发明实施例提供的支撑柱的排布方式的俯视图。\n\n[0019]图3是本发明实施例提供的微发光二极管显示面板的制备方法流程图。\n\n具体实施方式\n\n[0020]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。在附图中，为了清晰及便于理解和描述，附图中绘示的组件的尺寸和厚度并未按照比例。\n\n[0021]如图1所示，为本发明实施例提供的微发光二极管显示面板的基本结构示意图，所述微发光二极管显示面板包括衬底基板10、第一金属层17、钝化层18以及第二金属层20；所述第一金属层17位于所述衬底基板10之上，包括源极172、漏极171以及电源线173；所述钝化层18位于所述第一金属层17之上，包括位于所述源极172之上的第一过孔181和位于所述电源线173之上的第二过孔182；所述第二金属层20位于所述钝化层18之上，包括第一绑定电极201和第二绑定电极202，所述第一绑定电极201通过所述第一过孔181与所述源极172电连接，所述第二绑定电极202通过所述第二过孔182与所述电源线173电连接；其中，所述第一过孔181和所述第二过孔182内均设置有支撑柱19。\n\n[0022]其中，所述微发光二极管显示面板还包括微发光二极管芯片22，所述微发光二极管芯片22通过异方性导电胶膜21分别与所述第一绑定电极201、所述第二绑定电极202电连接。\n\n[0023]可以理解的是，微发光二极管显示面板指的是通过设置多个微发光二极管芯片22(图1中仅绘示一个微发光二极管芯片22为例进行说明)，通过TFT背板直接驱动多个微发光二极管芯片22发光来显示图像，与液晶显示面板相比，省略了背光模组、液晶层和彩膜基板，不仅更加轻薄，而且发光效率高、亮度高。但微发光二极管显示面板的微发光二极管芯片22需要进行转移制程与TFT背板电连接，微发光二极管芯片22是通过异方性导电胶膜21与TFT背板上的微发光二极管芯片的第一绑定电极201、第二绑定电极202粘连，异方性导电胶膜21为整面贴附，通过挤压异方性导电胶膜21，使得异方性导电胶膜21内的导电金球211聚集，从而产生导电通道，使得TFT背板上的电信号通过所述导电通道传输至微发光二极管芯片22，从而使微发光二极管芯片22按照相应的驱动电压发光。\n\n[0024]由于现有技术的TFT背板上的微发光二极管芯片的绑定电极的地形低，导致在挤压异方性导电胶膜时，机台不仅与绑定电极处的异方性导电胶膜接触，还会与其他无需绑定微发光二极管芯片的位置接触，由于机台并不平整，使得在热压过程中，容易导致面内其他金属走线(例如电源线的正极、数据线或存在跨线的区域)短路，也可能导致微发光二极管芯片的两个绑定电极之间短路，使得微发光二极管芯片的转移良率低，导致生产成本上升。本发明通过在第一绑定电极201和第二绑定电极202之下设置支撑柱19，所述支撑柱19可以增加所述第一绑定电极201和所述第二绑定电极202的高度，使得所述第一绑定电极201和所述第二绑定电极202与微发光二极管显示面板的其他区域存在一定的高度差，当进行热压制程时，机台仅仅与所述第一绑定电极201和所述第二绑定电极202上方的异方性导电胶膜21接触，不与其他无需绑定微发光二极管芯片22的区域接触，不会造成面内其他金属走线短路，也不与所述第一绑定电极201和所述第二绑定电极202的侧面的异方性导电胶膜21接触，不会造成所述第一绑定电极201和所述第二绑定电极202短路，大大提高了微发光二极管芯片22的转移良率。\n\n[0025]需要说明的是，所述支撑柱19的横截面积要分别小于所述第一过孔181和所述第二过孔182的横截面积，即所述支撑柱19的外壁与所述第一过孔181和所述第二过孔182的内壁无接触，可使得后续制备第一绑定电极201和第二绑定电极202时，第一绑定电极201可通过所述支撑柱19与所述第一过孔181之间的间隙与其下方的所述源极172电连接，所述第二绑定电极202可通过所述支撑柱19与所述第二过孔182之间的间隙与其下方的所述电源线173电连接。\n\n[0026]在一种实施例中，所述支撑柱19的高度大于或等于3微米，且小于或等于10微米。可以理解的是，当所述支撑柱19的高度在3微米至10微米之间时，既可以使第一绑定电极201和第二绑定电极202与钝化层18之间具有一定的高度差，避免热压造成短路，多出的高度差正好可以设置遮光层(图未示)，以防止相邻的微发光二极管芯片22之间出光颜色发生串扰，又可以为下方的有源层13遮光，不仅提高了对比度，还避免了TFT背板的有源层13受光照影响导致阈值电压不稳定。\n\n[0027]在一种实施例中，所述支撑柱19的高度均一。可以理解的是，所述支撑柱分别用于支撑第一绑定电极201和第二绑定电极202，当所述支撑柱19的高度均一时，所述第一绑定电极201和所述第二绑定电极202的高度也一致，当转移微发光二极管芯片22时，所受的挤压力比较均一，以免挤压力度不均造成的异方性导电胶膜21导电性能不良。\n\n[0028]在一种实施例中，所述支撑柱19的材料为有机光阻材料，具体的，所述支撑柱19可以通过掩膜板经曝光、显影形成相应的图案。\n\n[0029]在一种实施例中，所述支撑柱19的横截面形状为矩形或圆形，所述支撑柱19的纵截面形状为矩形或梯形。具体的，图1中仅以所述支撑柱19的纵截面形状为梯形为例进行说明，其他的形状未图示。可以理解的是，当所述支撑柱19的横截面形状为矩形，纵截面形状为矩形时，所述支撑柱19整体呈一个四棱柱；当所述支撑柱19的横截面形状为矩形，纵截面形状为梯形时，所述支撑柱19整体呈一个四棱台；当所述支撑柱19的横截面形状为圆形，纵截面形状为矩形时，所述支撑柱19整体呈一个圆柱；当所述支撑柱19的横截面形状为圆形，纵截面形状为梯形时，所述支撑柱19整体呈一个圆台。\n\n[0030]在一种实施例中，位于相邻的一个所述第一过孔181和一个所述第二过孔182内的两个所述支撑柱19组成支撑部23(如图2)，所述支撑部23等间距分布。具体的，请参阅图2，为本发明实施例提供的支撑柱的排布方式的俯视图，可以理解的是，一个微发光二极管芯片22(如图1)对应相邻的两个支撑柱19，即对应一个支撑部23，本发明实施例通过将支撑部23设置为等间距分布，即所述微发光二极管芯片22也是等间距分布，使得出光更均匀，提高了微发光二极管显示面板的显示效果。\n\n[0031]继续参阅图1，在一种实施例中，所述微发光二极管芯片22的厚度大于或等于4微米，且小于或等于8微米。所述异方性导电胶膜21的厚度大于或等于4微米，且小于或等于8微米。所述异方性导电胶膜21的厚度与所述微发光二极管芯片22的厚度一致。具体的，例如所述异方性导电胶膜21的厚度与所述微发光二极管芯片22的厚度均为6微米。可以理解的是，当所述异方性导电胶膜21的厚度与所述微发光二极管芯片22的厚度一致时，由于微发光二极管芯片22的下方还设置有支撑柱19，无论所述微发光二极管芯片22经热压后是否完全陷入所述异方性导电胶膜21中，所述微发光二极管芯片22所处的高度都会高于其他未设置支撑柱19的区域的高度，即可以避免面内其他位置发生热压短路，从而提高微发光二极管芯片22的转移良率。\n\n[0032]在一种实施例中，所述微发光二极管显示面板还包括位于所述衬底基板10上的遮光金属层11、位于所述遮光金属层11上的缓冲层12、位于所述缓冲层12上的有源层13、位于所述有源层13上的栅极绝缘层14、位于所述栅极绝缘层14和所述缓冲层12上的第三金属层15以及位于所述第三金属层15上的层间绝缘层16，其中，所述第三金属层15包括位于所述栅极绝缘层14上的栅极151以及位于所述缓冲层12上的栅线152、153。\n\n[0033]接下来，请参阅图3，为本发明实施例提供的微发光二极管显示面板的制备方法流程图，所述制备方法包括步骤：\n\n[0034]S1、提供一衬底基板；\n\n[0035]S2、在所述衬底基板之上制备第一金属层并图案化，形成源极、漏极以及电源线；\n\n[0036]S3、在所述第一金属层之上制备钝化层并蚀刻第一过孔和第二过孔，所述第一过孔位于所述源极之上，所述第二过孔位于所述电源线之上；\n\n[0037]S4、在所述第一过孔和所述第二过孔内制备支撑柱；\n\n[0038]S5、在所述钝化层和所述支撑柱之上制备第二金属层并图案化，形成第一绑定电极和第二绑定电极，所述第一绑定电极通过所述第一过孔与所述源极电连接，所述第二绑定电极通过所述第二过孔与所述电源线电连接。\n\n[0039]需要说明的是，所述支撑柱的横截面积要分别小于所述第一过孔和所述第二过孔的横截面积，即所述支撑柱的外壁与所述第一过孔和所述第二过孔的内壁无接触，可使得后续制备第一绑定电极和第二绑定电极时，第一绑定电极可通过所述支撑柱与所述第一过孔之间的间隙与其下方的所述源极电连接，所述第二绑定电极可通过所述支撑柱与所述第二过孔之间的间隙与其下方的所述电源线电连接。\n\n[0040]其中，所述制备方法还包括步骤：在所述第二金属层之上绑定微发光二极管芯片，所述微发光二极管芯片通过异方性导电胶膜分别与所述第一绑定电极、所述第二绑定电极电连接。具体的，微发光二极管芯片需要进行转移制程与TFT背板电连接，微发光二极管芯片是通过异方性导电胶膜与TFT背板上的第一绑定电极、第二绑定电极粘连，异方性导电胶膜为整面贴附，通过挤压异方性导电胶膜，使得异方性导电胶膜内的导电金球聚集，从而产生导电通道，使得TFT背板上的电信号通过所述导电通道传输至微发光二极管芯片，从而使微发光二极管芯片按照相应的驱动电压发光。\n\n[0041]可以理解的是，本发明通过在第一过孔和第二过孔内制备支撑柱，所述支撑柱可以增加所述第一绑定电极和所述第二绑定电极的高度，使得所述第一绑定电极和所述第二绑定电极与微发光二极管显示面板的其他区域存在一定的高度差，当进行热压制程时，机台仅仅与所述第一绑定电极和所述第二绑定电极上方的异方性导电胶膜接触，不与其他无需绑定微发光二极管芯片的区域接触，不会造成面内其他金属走线短路，也不与所述第一绑定电极和所述第二绑定电极的侧面的异方性导电胶膜接触，不会造成所述第一绑定电极和所述第二绑定电极短路，大大提高了微发光二极管芯片的转移良率。\n\n[0042]在一种实施例中，所述支撑柱的高度大于或等于3微米，且小于或等于10微米。可以理解的是，当所述支撑柱的高度在3微米至10微米之间时，既可以使第一绑定电极和第二绑定电极与钝化层之间具有一定的高度差，避免热压造成短路，多出的高度差正好可以制备遮光层，以防止相邻的微发光二极管芯片之间出光颜色发生串扰。\n\n[0043]在一种实施例中，所述支撑柱的高度均一。可以理解的是，所述支撑柱分别用于支撑第一绑定电极和第二绑定电极，当所述支撑柱的高度均一时，所述第一绑定电极和所述第二绑定电极的高度也一致，当转移微发光二极管芯片时，所受的挤压力比较均一，以免挤压力度不均造成的异方性导电胶膜导电性能不良。\n\n[0044]在一种实施例中，所述支撑柱的材料为有机光阻材料，具体的，所述支撑柱可以通过掩膜板经曝光、显影形成相应的图案。\n\n[0045]在一种实施例中，所述支撑柱的横截面形状为矩形或圆形，所述支撑柱的纵截面形状为矩形或梯形。可以理解的是，当所述支撑柱的横截面形状为矩形，纵截面形状为矩形时，所述支撑柱整体呈一个四棱柱；当所述支撑柱的横截面形状为矩形，纵截面形状为梯形时，所述支撑柱整体呈一个四棱台；当所述支撑柱的横截面形状为圆形，纵截面形状为矩形时，所述支撑柱整体呈一个圆柱；当所述支撑柱的横截面形状为圆形，纵截面形状为梯形时，所述支撑柱整体呈一个圆台。\n\n[0046]在一种实施例中，位于相邻的一个所述第一过孔和一个所述第二过孔内的两个所述支撑柱组成支撑部，所述支撑部等间距分布。可以理解的是，一个微发光二极管芯片对应相邻的两个支撑柱，即对应一个支撑部，本发明实施例通过将支撑部设置为等间距分布，即所述微发光二极管芯片也是等间距分布，使得出光更均匀，提高了微发光二极管显示面板的显示效果。\n\n[0047]在一种实施例中，所述微发光二极管芯片的厚度大于或等于4微米，且小于或等于8微米。所述异方性导电胶膜的厚度大于或等于4微米，且小于或等于8微米。所述异方性导电胶膜的厚度与所述微发光二极管芯片的厚度一致。具体的，例如所述异方性导电胶膜的厚度与所述微发光二极管芯片的厚度均为6微米。可以理解的是，当所述异方性导电胶膜的厚度与所述微发光二极管芯片的厚度一致时，由于微发光二极管芯片的下方还设置有支撑柱，无论所述微发光二极管芯片经热压后是否完全陷入所述异方性导电胶膜中，所述微发光二极管芯片所处的高度都会高于其他未设置支撑柱的区域的高度，即可以避免面内其他位置发生热压短路，从而提高微发光二极管芯片的转移良率。\n\n[0048]在一种实施例中，所述步骤S1与所述步骤S2之间还包括：在所述衬底基板上制备遮光金属层；在所述遮光金属层上制备缓冲层；在所述缓冲层上制备有源层；在所述有源层上制备栅极绝缘层；在所述栅极绝缘层和所述缓冲层上制备第三金属层并图案化，形成位于所述栅极绝缘层上的栅极和位于所述缓冲层上的栅线；在所述第三金属层上制备层间绝缘层。\n\n[0049]本发明实施例还提供一种显示装置，包括上述的微发光二极管显示面板以及盖板，所述微发光二极管显示面板的结构及制备方法请参阅图1至图3及相关描述，此处不再赘述。本发明实施例提供的显示装置可以为：手机、平板电脑、笔记本电脑、数码相机、导航仪等具有显示功能的产品或部件。\n\n[0050]综上所述，本发明实施例提供的一种微发光二极管显示面板，包括衬底基板、第一金属层、钝化层以及第二金属层；第一金属层位于衬底基板之上，包括源极、漏极以及电源线；钝化层位于第一金属层之上，包括位于源极之上的第一过孔和位于电源线之上的第二过孔；第二金属层位于钝化层之上，包括第一绑定电极和第二绑定电极，第一绑定电极通过第一过孔与源极电连接，第二绑定电极通过第二过孔与电源线电连接；其中，第一过孔和第二过孔内均设置有支撑柱。本发明通过在钝化层上设置第一过孔和第二过孔，然后在第一过孔和第二过孔内设置支撑柱，再在支撑柱之上设置第一绑定电极、第二绑定电极，通过支撑柱增加第一绑定电极、第二绑定电极的高度，当进行转移制程时，机台仅与位于第一绑定电极、第二绑定电极之上的异方性导电胶膜接触，避免面内其他位置发生热压短路，从而提高微发光二极管芯片的转移良率，解决了由于现有技术的微发光二极管显示面板面内的微发光二极管芯片的绑定电极的地形低，导致在转移过程中容易出现绑定电极和面内走线短路以及异方性导电胶膜导电性能不良，影响产品良率的技术问题。\n\n[0051]以上对本发明实施例所提供的一种微发光二极管显示面板及其制备方法、显示装置进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。');
INSERT INTO `os_patent_instruction_text` VALUES (10966, 24020, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种透明液晶显示器。\n\n背景技术\n\n[0002]现如今透明液晶显示器的工艺技术成熟，成本和良率相对有机发光二极管(OLED)和小型/微型发光二极管(Mini/Micro LED)显示装置具有较大优势。但是由于中国面板业爆发式发展、透明液晶显示器产量爆炸式增加，透明液晶显示器的价格一直下探，各大透明液晶显示器生产厂家都急切的需要新型产品来消耗透明液晶显示器产能、稳定透明液晶显示器产品的市场竞争力。\n\n[0003]虽然液晶显示器具有成本低的优势，但是其厚度较大，不符合商场/门店玻璃橱窗和玻璃墙壁等透明显示器的应用，也存在对比度低的缺陷。\n\n发明内容\n\n[0004]发明的目的在于，提供一种透明液晶显示器，用于解决现有透明液晶显示器厚度较大，对比度低的缺陷，无法符合商场/门店玻璃橱窗和玻璃墙壁等透明显示器应用的技术问题。\n\n[0005]为了实现上述目的，本发明其中一实施例中提供一种透明液晶显示器，包括背光面板、设置于所述背光面上的透明光学胶层以及设置于所述透明光学胶层上的液晶面板；其中，所述液晶面板包括多个像素单元以及位于所述像素单元之间的透光区；所述背光面板包括背光阵列基板、设置于所述背光阵列基板上的挡墙阵列以及多个发光单元，其中所述挡墙阵列设置有多个对应于所述多个像素单元及所述透光区的开孔，对应于所述多个像素单元的所述开孔中设置至少一个所述发光单元以及覆盖所述发光单元的扩散层。\n\n[0006]于本发明一实施例中的所述的透明液晶显示器，其中，所述背光阵列基板包括透明基板与设置在所述透明基板上的驱动电路层，所述驱动电路层包括多个驱动电路，每个所述发光单元电连接至一个所述驱动电路，所述多个驱动电路用以驱动所述发光单元发光并进行分区背光亮度控制。\n\n[0007]于本发明一实施例中的所述的透明液晶显示器，其中，所述透光区包括多个透光子区，每个透光子区包括一个透光子区电极用以控制所述液晶面板的所述透光子区的透光程度。\n\n[0008]于本发明一实施例中的所述的透明液晶显示器，其中，所述挡墙阵列对应于所述透光区的所述开孔中填满透明光学胶。\n\n[0009]于本发明一实施例中的所述的透明液晶显示器，其中，多个所述像素单元对应于所述挡墙阵列的一个所述开孔。\n\n[0010]于本发明一实施例中的所述的透明液晶显示器，其中，所述发光单元包括蓝光微型发光二极管(Micro LED)。\n\n[0011]于本发明一实施例中的所述的透明液晶显示器，其中，所述挡墙阵列的所述开孔中还包括量子点层设置于所述扩散层上，所述多个像素单元包括红色子像素单元、绿色子像素单元及蓝色子像素单元，所述量子点层包括红色量子点层及绿色量子点层，所述红色量子点层对应所述红色子像素单元设置，所述绿色量子点层对应所述绿色子像素单元设置。\n\n[0012]于本发明一实施例中的所述的透明液晶显示器，其中，所述挡墙阵列的所述开孔中还包括量子点层设置于所述扩散层上，每个所述像素单元包括多个子像素单元，所述量子点层包括红色量子点及绿色量子点，多个所述子像素单元对应一个所述开孔设置。\n\n[0013]于本发明一实施例中的所述的透明液晶显示器，其中，每个所述像素单元包括多个子像素单元，每个所述子像素单元对应于一个所述开孔设置，所述开孔中设置三个所述发光单元，其中一个所述发光单元为蓝光微型发光二极管(Micro LED)，一个所述发光单元为红光微型发光二极管，另一个所述发光单元为绿光微型发光二极管。\n\n[0014]于本发明一实施例中的所述的透明液晶显示器，其中，每个所述像素单元包括多个子像素单元，多个所述子像素单元对应于一个所述开孔设置，所述开孔中设置三个所述发光单元，其中一个所述发光单元为蓝光微型发光二极管(Micro LED)，一个所述发光单元为红光微型发光二极管，另一个所述发光单元为绿光微型发光二极管。\n\n[0015]本发明的有益效果在于，本申请提供的透明液晶显示器，可以做到黑画面或者低灰阶画面时的背光低亮度工作，或是分区呈现不同背光亮度，一方面可以降低功耗，另一方面可以提升面板的对比度。同时通过在液晶面板的相邻两个像素单元之间设置透光区，并且进一步在背光面板的背光阵列基板上的挡墙阵列上对应所述像素单元及透光区的位置设置开孔，对应透光区的开孔位置的透明度可以通过液晶面板的用户界面调整设置，在透明液晶显示器不通电时呈现非透明状态，在透明液晶显示器通电时呈现透明状态，符合商场/门店玻璃橱窗和玻璃墙壁多种透明显示器应用场景。\n\n附图说明\n\n[0016]下面结合附图，通过对本申请的具体实施方式详细描述，呈现本申请的技术方案及其它有益效果。\n\n[0017]图1为本申请实施例提供的第一种透明液晶显示器的结构示意图。\n\n[0018]图2为本实施例中提供的透明液晶显示器的第一种俯视图。\n\n[0019]图3为本申请实施例提供的第二种透明液晶显示器的结构示意图。\n\n[0020]图4为本申请实施例提供的第三种透明液晶显示器的结构示意图。\n\n[0021]图5为本申请实施例提供的第四种透明液晶显示器的结构示意图。\n\n[0022]图6为本申请实施例提供的第五种透明液晶显示器的结构示意图。\n\n[0023]图7为本申请实施例提供的第六种透明液晶显示器的结构示意图。\n\n[0024]图8为本实施例中提供的透明液晶显示器的第二种俯视图。\n\n[0025]图9为本实施例中提供的透明液晶显示器的第三种俯视图。\n\n[0026]图10为本实施例中提供的透明液晶显示器的第四种俯视图。\n\n[0027]图11为本实施例中提供的透明液晶显示器的第五种俯视图。\n\n[0028]图12为本实施例中提供的透明液晶显示器的第六种俯视图。\n\n[0029]图13为本实施例中提供的透明液晶显示器的第七种俯视图。\n\n[0030]图14为本实施例中采用图2所示透明液晶显示器的走线结构示意图。\n\n[0031]图中部件标识如下：\n\n[0032]透明基板1，驱动电路层2，驱动电路3，\n\n[0033]背光面板10，背光阵列基板11，挡墙阵列12，\n\n[0034]发光单元13，扩散层14，量子点层15，\n\n[0035]开孔16，液晶面板20，彩膜基板21，\n\n[0036]液晶层22，阵列基板23，支撑柱24，\n\n[0037]像素电路25，像素电极26，上偏光片27，\n\n[0038]下偏光片28，像素电路层29，透明光学胶层30，\n\n[0039]透明液晶显示器100，像素单元210，玻璃基板211，\n\n[0040]黑色矩阵层212，色阻层213，平坦层214，\n\n[0041]公共电极层215，子像素单元216，红色子像素单元216R，\n\n[0042]绿色子像素单元216G，蓝色子像素单元216B，透光区220，\n\n[0043]透光子区221，透光子区电极222，透光子区电路223。\n\n具体实施方式\n\n[0044]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0045]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0046]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0047]具体的，请参阅图1、图2所示，本申请实施例提供一种透明液晶显示器100，所述透明液晶显示器100可以为智能手机、平板电脑、显示屏、玻璃橱窗显示器、玻璃墙壁显示器等显示装置。所述透明液晶显示器100包括背光面板10、设置于所述背光面上的透明光学胶层30以及设置于所述透明光学胶层30上的液晶面板20；所述液晶面板20包括多个像素单元210以及位于所述像素单元210之间的透光区220。\n\n[0048]其中，请参阅图1、图2所示，所述背光面板10包括背光阵列基板11、设置于所述背光阵列基板11上的挡墙阵列12以及多个发光单元13，其中所述挡墙阵列12设置有多个对应于所述多个像素单元210及所述透光区220的开孔16，对应于所述多个像素单元210的所述开孔16中设置至少一个所述发光单元13以及覆盖所述发光单元13的扩散层14，所述扩散层14可对所述发光单元13发出的光线扩散作用并可实现对所述发光单元13封装保护的作用。\n\n[0049]所述发光单元13使用主动式小型/微型发光二极管，从而所述背光面板10为主动式小型/微型发光二极管(Mini/Micro LED)背光，主动式背光面板10的功能主要可以做到黑画面或者低灰阶画面的背光低亮度工作，或是分区呈现不同背光亮度，一方面可以降低功耗，另一方面可以提升面板的对比度。\n\n[0050]所述背光阵列基板11包括透明基板1与设置在所述透明基板1上的驱动电路层2，所述驱动电路层2包括多个驱动电路3，每个所述发光单元13电连接至一个所述驱动电路3，所述多个驱动电路3用以驱动所述发光单元13发光并进行分区背光亮度控制。\n\n[0051]请参阅图2、图8-图13所示，所述透光区220包括多个透光子区221，不同实施例的透光子区221的形状、大小与设置位置各不相同。依据透光子区221的形状与大小，每个透光子区221包括一个或多个透光子区电极222用以控制所述液晶面板20的所述透光子区221的透光程度。每一透光子区电极222与一个透光子区电路223连接。\n\n[0052]所述挡墙阵列12对应于所述透光区220的所述开孔16中填满透明光学胶，从而在对应所述透光区220的所述开孔16位置透光。\n\n[0053]请参阅图3所示，多个所述像素单元210对应于所述挡墙阵列12的一个所述开孔16，这样可以简省所述发光单元13的数量，降低成本，但仍能具备分区呈现不同背光亮度，降低功耗，提升面板的对比度的效果。\n\n[0054]优选地，如图4所示，所述发光单元13包括蓝光微型发光二极管(Micro LED)。对应的，所述挡墙阵列12的所述开孔16中还包括设置于所述扩散层14上的量子点层15。其中，所述多个像素单元210包括红色子像素单元216R、绿色子像素单元216G及蓝色子像素单元216B，所述量子点层15包括红色量子点层RQ及绿色量子点层GQ，所述红色量子点层RQ对应所述红色子像素单元216R设置，所述绿色量子点层GQ对应所述绿色子像素单元216G设置。所述红色量子点层RQ用于吸收蓝光微型发光二极管发出的蓝光后发出红光，所述绿色量子点层GQ用于吸收蓝光微型发光二极管发出的蓝光后发出绿光。所述蓝色子像素单元216B所对应的开孔16中则不需设置量子点层15。\n\n[0055]或者如图5所示，每个所述像素单元210包括多个子像素单元216，所述量子点层15包括红色量子点及绿色量子点，多个所述子像素单元216对应一个所述开孔16设置。所述量子点层15中的红色量子点及绿色量子点均匀混合，用于吸收蓝光微型发光二极管发出的蓝光后发出红光及绿光，混合蓝光微型发光二极管发出的蓝光之后形成白光。\n\n[0056]在一实施例中，与其他实施例不同的是，一个所述子像素单元216对应一个所述开孔16，一个所述开孔16中设置三个所述发光单元13。如图6所示，其中一个所述发光单元13为蓝光微型发光二极管，一个所述发光单元13为红光微型发光二极管，另一个所述发光单元13为绿光微型发光二极管，三个所述发光单元13混光后形成白光；或者如图7所示，一个所述开孔16中设置三个不同色光的所述发光单元13且多个所述子像素单元216对应一个所述开孔16。\n\n[0057]请参阅图3、图4所示，本实施例中，所述液晶面板20包括彩膜基板21、阵列基板23以及液晶层22；所述彩膜基板21设有多个像素单元210；所述阵列基板23与所述彩膜基板21相对设置；所述液晶层22设于所述阵列基板23和所述彩膜基板21之间。\n\n[0058]所述液晶面板20的驱动方式包括但不限于VA/TN/IPS/HVA等方式，所述像素电路25包含晶体管，所述晶体管的类型包括但不限于非晶硅(a-Si)、铟镓锌氧化物(IGZO)、低温多晶硅(LTPS)等，本实施例图中以底栅非晶硅晶体管为例。\n\n[0059]请参阅图1所示，本实施例中，所述彩膜基板21包括玻璃基板211、黑色矩阵层212以及平坦层214；所述黑色矩阵层212设于所述玻璃基板211的一侧表面；所述黑色矩阵层212在所述像素单元210内间隔设置；所述平坦层214设于所述黑色矩阵层212背离所述玻璃基板211一侧。所述彩膜基板21还包括公共电极层215，所述公共电极层215设于所述平坦层214背离所述玻璃基板211一侧。所述公共电极层215为透明材质，优选所述公共电极层215的材质为氧化铟锡。所述公共电极层215面向所述液晶层22的表面设置有配向层(图未绘示)。所述液晶面板20还包括支撑柱24，所述支撑柱24设于所述阵列基板23和所述彩膜基板21之间；所述支撑柱24与所述黑色矩阵层212对应设置。所述支撑柱用于支撑所述阵列基板23和所述彩膜基板21之间形成液晶盒间隙。所述液晶面板20还包括设于阵列基板23上的像素电路层29，设于像素电路层29中的像素电路25以及设于像素电路25上的像素电极26、上偏光片27以及下偏光片28；所述像素电极26设置有配向层(图未绘示)。所述透光子区电路223与像素电路25同样设在像素电路层29中。\n\n[0060]请参阅图3、图4所示，本实施例中，所述彩膜基板21包括玻璃基板211、黑色矩阵层212、色阻层213以及平坦层214；所述黑色矩阵层212设于所述玻璃基板211的一侧表面；所述黑色矩阵层212在所述像素单元210内间隔设置；所述色阻层213设于所述黑色矩阵层212之间；所述色阻层213设有红色色阻层R、绿色色阻层G、蓝色色阻层B；所述平坦层214设于所述黑色矩阵层212背离所述玻璃基板211一侧并覆盖所述色阻层213。所述彩膜基板21还包括公共电极层215，所述公共电极层215设于所述平坦层214背离所述玻璃基板211一侧。所述公共电极层215为透明材质，优选所述公共电极层215的材质为氧化铟锡。所述公共电极层215面向所述液晶层22的表面设置有配向层(图未绘示)。所述液晶面板20还包括支撑柱24，所述支撑柱24设于所述阵列基板23和所述彩膜基板21之间；所述支撑柱24与所述黑色矩阵层212对应设置。所述支撑柱用于支撑所述阵列基板23和所述彩膜基板21之间形成液晶盒间隙。所述液晶面板20还包括设于阵列基板23上的像素电路层29，设于像素电路层29中的像素电路25以及设于像素电路25上的像素电极26、上偏光片27以及下偏光片28；所述像素电极26设置有配向层(图未绘示)。所述透光子区电路223与像素电路25同样设在像素电路层29中。\n\n[0061]在制作所述液晶面板20时，在所述阵列基板23和所述彩膜基板21的表面制作所述配向层，然后涂框胶、对组、灌液晶，或在液晶中添加光配向材料并在灌液晶后对液晶进行配向与固化。\n\n[0062]可理解是，在所述透光区220对应位置不设置所述黑色矩阵层212、所述色阻层213及所述支撑柱24，仅有所述平坦层214、透明的所述公共电极层215及配向层，为了控制所述透光区220的透光与否，所述透光区220设置多个透光子区221，每个透光子区221包括一个或多个透明的透光子区电极222用以控制所述液晶面板20的所述透光子区221中的液晶偏转，以控制透光子区221的透光程度便于让背景光线通过。\n\n[0063]请参阅图2所示，图2为本实施例中提供的透明液晶显示器的第一种俯视图，所述像素单元210呈阵列式间隔排布；多个所述像素单元210形成多行，多个所述像素单元210形成多列；所述透光区220的透光子区221呈矩形，所述透光子区221设于相邻两行所述像素单元210之间。\n\n[0064]请参阅图8所示，图8为本实施例中提供的透明液晶显示器的第二种俯视图，所述像素单元210呈阵列式间隔排布；多个所述像素单元210形成多行，多个所述像素单元210形成多列；所述透光区220的透光子区221呈矩形，所述透光子区221设于相邻两列所述像素单元210之间。\n\n[0065]请参阅图9所示，图9为本实施例中提供的透明液晶显示器的第三种俯视图，所述像素单元210呈阵列式间隔排布；多个所述像素单元210形成多行，多个所述像素单元210形成多列；所述透光区220的所述透光子区221设于相邻两行所述像素单元210之间并且设于相邻两列所述像素单元210之间连接形成网状结构。\n\n[0066]请参阅图10所示，图10为本实施例中提供的透明液晶显示器的第四种俯视图，所述像素单元210呈阵列式间隔排布；多个所述像素单元210形成多列；所述透光区220的透光子区221呈矩形与所述像素单元210设于同一列。\n\n[0067]请参阅图11所示，图11为本实施例中提供的透明液晶显示器的第五种俯视图，所述像素单元210呈阵列式间隔排布；多个所述像素单元210形成多行；所述透光区220的透光子区221呈矩形，所述透光子区221与所述像素单元210设于同一行。\n\n[0068]请参阅图12所示，图12为本实施例中提供的透明液晶显示器的第六种俯视图，所述像素单元210呈阵列式间隔排布；多个所述像素单元210形成多行、多列；所述透光区220的透光子区221呈矩形，部分所述透光子区221与所述像素单元210设于同一行且部分所述透光子区221与所述像素单元210设于同一列。\n\n[0069]请参阅图13所示，图13为本实施例中提供的透明液晶显示器的第七种俯视图，所述像素单元210呈阵列式间隔排布；多个所述像素单元210形成多行、多列；所述透光区220的透光子区221呈倒T形，所述透光子区221设于所述像素单元210之间。\n\n[0070]本申请的所述透明液晶显示器100具有透明显示的功能，并且其透明度可控，可实现在不通电时呈现非透明状态，在通电时呈现透明状态。\n\n[0071]具体的，在所述像素单元210之间设计大量的透光区220，为了避免大面积的透光区220的液晶旋转控制不均匀，可将透光区220区分为多个透光子区221，每个透光子区221有自己的透光子区电极222。透光区220的所述透光子区电路223与像素电路25同样设在像素电路层29中。并且透过整个透光区220提供相同的电压或类似数据线与扫描线的主动矩阵控制走线设计，通过全局/区域控制信号控制所述透光子区电极222，即整个面板的透光区220可整体控制或分区域控制，用户可以通过用户界面的不同设置选择透明显示功能的模式。从而可通过信号的输入，实现透明度可控的功能。\n\n[0072]非透明模式为：所述液晶层22优选包含负性液晶。当透光区220的所述透光子区电极222无电压，负性液晶竖直分布在液晶层22中，液晶轴向竖直于所述阵列基板23或所述彩膜基板21；上偏光片27和下偏光片28呈正交方向，所以光线无法通过透光区220，此时显示屏为非透明状态，本专利中暂定此状态为“隐私模式”。亦即显示屏不上电时，透光区220内无电压，处于不透明状态，整个屏幕不透光。可以用在商业橱窗或店铺外墙，“非营业时间不透明”起隐私保护作用。\n\n[0073]透明模式为：当透光区220的所述透光子区电极222有电压时，负性液晶会由“竖直”状态变为“躺下”状态，具体“躺下”的程度由透光子区221的电压确定，屏幕的透明度可以调节。其中负性液晶“躺下”状态为液晶轴向平行于所述阵列基板23或所述彩膜基板21。\n\n[0074]所述透明液晶显示器100简化的设计是透光区220的所述透光子区电极222的电压输入仅两种模式，控制显示屏“透明模式”与“非透明模式”两种状态，便于用户一键式操作。当然也可根据可互需求，控制透光区220的所述透光子区电极222的电压输入值大小调节透光区220的透光度。\n\n[0075]其中，本申请以上述其中一个实施例的透明液晶显示器为例说明走线设置方式，如图14所示，采用第三种透明液晶显示器作为示例，其中在显示区域中包含RGB构成的像素单元210，在透光区220中尽量不设置金属走线与驱动电路、无黑色矩阵层212、无红色色阻层R、无绿色色阻层G、无蓝色色阻层B，在垂直方向的通路上存在透明的膜层。金属走线包括扫描线GL以及数据线DL，所述扫描线GL沿横向设置，所述数据线DL沿纵向设置。每一红色色阻层R、绿色色阻层G、蓝色色阻层B对应设置像素电路25。所述扫描线GL与所述像素单元210内的红色色阻层R、绿色色阻层G、蓝色色阻层B中的像素电路25连接，所述数据线DL与位于同一列的红色色阻层R、绿色色阻层G、蓝色色阻层B连接。\n\n[0076]透光子区电路223通过走线PDL与PGL提供讯号，其具体操作类似所述扫描线GL与所述数据线DL。\n\n[0077]其中整个屏幕的像素分布越稀疏或者透光区220占比越高，屏幕的透明度越高。但考虑到显示效果，需权衡显示屏的分辨率和透过率。\n\n[0078]在其他实施例中，也可为了避免在透光区220中金属走线的反光，设置黑色矩阵层212遮挡所述扫描线GL以及所述数据线DL。\n\n[0079]本发明的有益效果在于，提供一种透明液晶显示器，通过在相邻两个像素区之间设置透光区，并且进一步将背光面板与所述透光区对应设置透明区，可以做到黑画面或者低灰阶画面的背光低亮度工作，一方面可以降低功耗，另一方面可以提升面板的对比度。同时对应设置透光区和透明区，其透明度可以通过用户界面调整设置，在透明液晶显示器不通电时呈现非透明状态，在透明液晶显示器通电时呈现透明状态，符合商场/门店玻璃橱窗和玻璃墙壁多种透明显示器应用场景。\n\n[0080]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0081]以上对本申请实施例所提供的一种透明液晶显示器进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种透明液晶显示器。\n\n背景技术\n\n[0002]现如今透明液晶显示器的工艺技术成熟，成本和良率相对有机发光二极管(OLED)和小型/微型发光二极管(Mini/Micro LED)显示装置具有较大优势。但是由于中国面板业爆发式发展、透明液晶显示器产量爆炸式增加，透明液晶显示器的价格一直下探，各大透明液晶显示器生产厂家都急切的需要新型产品来消耗透明液晶显示器产能、稳定透明液晶显示器产品的市场竞争力。\n\n[0003]虽然液晶显示器具有成本低的优势，但是其厚度较大，不符合商场/门店玻璃橱窗和玻璃墙壁等透明显示器的应用，也存在对比度低的缺陷。\n\n发明内容\n\n[0004]发明的目的在于，提供一种透明液晶显示器，用于解决现有透明液晶显示器厚度较大，对比度低的缺陷，无法符合商场/门店玻璃橱窗和玻璃墙壁等透明显示器应用的技术问题。\n\n[0005]为了实现上述目的，本发明其中一实施例中提供一种透明液晶显示器，包括背光面板、设置于所述背光面上的透明光学胶层以及设置于所述透明光学胶层上的液晶面板；其中，所述液晶面板包括多个像素单元以及位于所述像素单元之间的透光区；所述背光面板包括背光阵列基板、设置于所述背光阵列基板上的挡墙阵列以及多个发光单元，其中所述挡墙阵列设置有多个对应于所述多个像素单元及所述透光区的开孔，对应于所述多个像素单元的所述开孔中设置至少一个所述发光单元以及覆盖所述发光单元的扩散层。\n\n[0006]于本发明一实施例中的所述的透明液晶显示器，其中，所述背光阵列基板包括透明基板与设置在所述透明基板上的驱动电路层，所述驱动电路层包括多个驱动电路，每个所述发光单元电连接至一个所述驱动电路，所述多个驱动电路用以驱动所述发光单元发光并进行分区背光亮度控制。\n\n[0007]于本发明一实施例中的所述的透明液晶显示器，其中，所述透光区包括多个透光子区，每个透光子区包括一个透光子区电极用以控制所述液晶面板的所述透光子区的透光程度。\n\n[0008]于本发明一实施例中的所述的透明液晶显示器，其中，所述挡墙阵列对应于所述透光区的所述开孔中填满透明光学胶。\n\n[0009]于本发明一实施例中的所述的透明液晶显示器，其中，多个所述像素单元对应于所述挡墙阵列的一个所述开孔。\n\n[0010]于本发明一实施例中的所述的透明液晶显示器，其中，所述发光单元包括蓝光微型发光二极管(Micro LED)。\n\n[0011]于本发明一实施例中的所述的透明液晶显示器，其中，所述挡墙阵列的所述开孔中还包括量子点层设置于所述扩散层上，所述多个像素单元包括红色子像素单元、绿色子像素单元及蓝色子像素单元，所述量子点层包括红色量子点层及绿色量子点层，所述红色量子点层对应所述红色子像素单元设置，所述绿色量子点层对应所述绿色子像素单元设置。\n\n[0012]于本发明一实施例中的所述的透明液晶显示器，其中，所述挡墙阵列的所述开孔中还包括量子点层设置于所述扩散层上，每个所述像素单元包括多个子像素单元，所述量子点层包括红色量子点及绿色量子点，多个所述子像素单元对应一个所述开孔设置。\n\n[0013]于本发明一实施例中的所述的透明液晶显示器，其中，每个所述像素单元包括多个子像素单元，每个所述子像素单元对应于一个所述开孔设置，所述开孔中设置三个所述发光单元，其中一个所述发光单元为蓝光微型发光二极管(Micro LED)，一个所述发光单元为红光微型发光二极管，另一个所述发光单元为绿光微型发光二极管。\n\n[0014]于本发明一实施例中的所述的透明液晶显示器，其中，每个所述像素单元包括多个子像素单元，多个所述子像素单元对应于一个所述开孔设置，所述开孔中设置三个所述发光单元，其中一个所述发光单元为蓝光微型发光二极管(Micro LED)，一个所述发光单元为红光微型发光二极管，另一个所述发光单元为绿光微型发光二极管。\n\n[0015]本发明的有益效果在于，本申请提供的透明液晶显示器，可以做到黑画面或者低灰阶画面时的背光低亮度工作，或是分区呈现不同背光亮度，一方面可以降低功耗，另一方面可以提升面板的对比度。同时通过在液晶面板的相邻两个像素单元之间设置透光区，并且进一步在背光面板的背光阵列基板上的挡墙阵列上对应所述像素单元及透光区的位置设置开孔，对应透光区的开孔位置的透明度可以通过液晶面板的用户界面调整设置，在透明液晶显示器不通电时呈现非透明状态，在透明液晶显示器通电时呈现透明状态，符合商场/门店玻璃橱窗和玻璃墙壁多种透明显示器应用场景。\n\n附图说明\n\n[0016]下面结合附图，通过对本申请的具体实施方式详细描述，呈现本申请的技术方案及其它有益效果。\n\n[0017]图1为本申请实施例提供的第一种透明液晶显示器的结构示意图。\n\n[0018]图2为本实施例中提供的透明液晶显示器的第一种俯视图。\n\n[0019]图3为本申请实施例提供的第二种透明液晶显示器的结构示意图。\n\n[0020]图4为本申请实施例提供的第三种透明液晶显示器的结构示意图。\n\n[0021]图5为本申请实施例提供的第四种透明液晶显示器的结构示意图。\n\n[0022]图6为本申请实施例提供的第五种透明液晶显示器的结构示意图。\n\n[0023]图7为本申请实施例提供的第六种透明液晶显示器的结构示意图。\n\n[0024]图8为本实施例中提供的透明液晶显示器的第二种俯视图。\n\n[0025]图9为本实施例中提供的透明液晶显示器的第三种俯视图。\n\n[0026]图10为本实施例中提供的透明液晶显示器的第四种俯视图。\n\n[0027]图11为本实施例中提供的透明液晶显示器的第五种俯视图。\n\n[0028]图12为本实施例中提供的透明液晶显示器的第六种俯视图。\n\n[0029]图13为本实施例中提供的透明液晶显示器的第七种俯视图。\n\n[0030]图14为本实施例中采用图2所示透明液晶显示器的走线结构示意图。\n\n[0031]图中部件标识如下：\n\n[0032]透明基板1，驱动电路层2，驱动电路3，\n\n[0033]背光面板10，背光阵列基板11，挡墙阵列12，\n\n[0034]发光单元13，扩散层14，量子点层15，\n\n[0035]开孔16，液晶面板20，彩膜基板21，\n\n[0036]液晶层22，阵列基板23，支撑柱24，\n\n[0037]像素电路25，像素电极26，上偏光片27，\n\n[0038]下偏光片28，像素电路层29，透明光学胶层30，\n\n[0039]透明液晶显示器100，像素单元210，玻璃基板211，\n\n[0040]黑色矩阵层212，色阻层213，平坦层214，\n\n[0041]公共电极层215，子像素单元216，红色子像素单元216R，\n\n[0042]绿色子像素单元216G，蓝色子像素单元216B，透光区220，\n\n[0043]透光子区221，透光子区电极222，透光子区电路223。\n\n具体实施方式\n\n[0044]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0045]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0046]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0047]具体的，请参阅图1、图2所示，本申请实施例提供一种透明液晶显示器100，所述透明液晶显示器100可以为智能手机、平板电脑、显示屏、玻璃橱窗显示器、玻璃墙壁显示器等显示装置。所述透明液晶显示器100包括背光面板10、设置于所述背光面上的透明光学胶层30以及设置于所述透明光学胶层30上的液晶面板20；所述液晶面板20包括多个像素单元210以及位于所述像素单元210之间的透光区220。\n\n[0048]其中，请参阅图1、图2所示，所述背光面板10包括背光阵列基板11、设置于所述背光阵列基板11上的挡墙阵列12以及多个发光单元13，其中所述挡墙阵列12设置有多个对应于所述多个像素单元210及所述透光区220的开孔16，对应于所述多个像素单元210的所述开孔16中设置至少一个所述发光单元13以及覆盖所述发光单元13的扩散层14，所述扩散层14可对所述发光单元13发出的光线扩散作用并可实现对所述发光单元13封装保护的作用。\n\n[0049]所述发光单元13使用主动式小型/微型发光二极管，从而所述背光面板10为主动式小型/微型发光二极管(Mini/Micro LED)背光，主动式背光面板10的功能主要可以做到黑画面或者低灰阶画面的背光低亮度工作，或是分区呈现不同背光亮度，一方面可以降低功耗，另一方面可以提升面板的对比度。\n\n[0050]所述背光阵列基板11包括透明基板1与设置在所述透明基板1上的驱动电路层2，所述驱动电路层2包括多个驱动电路3，每个所述发光单元13电连接至一个所述驱动电路3，所述多个驱动电路3用以驱动所述发光单元13发光并进行分区背光亮度控制。\n\n[0051]请参阅图2、图8-图13所示，所述透光区220包括多个透光子区221，不同实施例的透光子区221的形状、大小与设置位置各不相同。依据透光子区221的形状与大小，每个透光子区221包括一个或多个透光子区电极222用以控制所述液晶面板20的所述透光子区221的透光程度。每一透光子区电极222与一个透光子区电路223连接。\n\n[0052]所述挡墙阵列12对应于所述透光区220的所述开孔16中填满透明光学胶，从而在对应所述透光区220的所述开孔16位置透光。\n\n[0053]请参阅图3所示，多个所述像素单元210对应于所述挡墙阵列12的一个所述开孔16，这样可以简省所述发光单元13的数量，降低成本，但仍能具备分区呈现不同背光亮度，降低功耗，提升面板的对比度的效果。\n\n[0054]优选地，如图4所示，所述发光单元13包括蓝光微型发光二极管(Micro LED)。对应的，所述挡墙阵列12的所述开孔16中还包括设置于所述扩散层14上的量子点层15。其中，所述多个像素单元210包括红色子像素单元216R、绿色子像素单元216G及蓝色子像素单元216B，所述量子点层15包括红色量子点层RQ及绿色量子点层GQ，所述红色量子点层RQ对应所述红色子像素单元216R设置，所述绿色量子点层GQ对应所述绿色子像素单元216G设置。所述红色量子点层RQ用于吸收蓝光微型发光二极管发出的蓝光后发出红光，所述绿色量子点层GQ用于吸收蓝光微型发光二极管发出的蓝光后发出绿光。所述蓝色子像素单元216B所对应的开孔16中则不需设置量子点层15。\n\n[0055]或者如图5所示，每个所述像素单元210包括多个子像素单元216，所述量子点层15包括红色量子点及绿色量子点，多个所述子像素单元216对应一个所述开孔16设置。所述量子点层15中的红色量子点及绿色量子点均匀混合，用于吸收蓝光微型发光二极管发出的蓝光后发出红光及绿光，混合蓝光微型发光二极管发出的蓝光之后形成白光。\n\n[0056]在一实施例中，与其他实施例不同的是，一个所述子像素单元216对应一个所述开孔16，一个所述开孔16中设置三个所述发光单元13。如图6所示，其中一个所述发光单元13为蓝光微型发光二极管，一个所述发光单元13为红光微型发光二极管，另一个所述发光单元13为绿光微型发光二极管，三个所述发光单元13混光后形成白光；或者如图7所示，一个所述开孔16中设置三个不同色光的所述发光单元13且多个所述子像素单元216对应一个所述开孔16。\n\n[0057]请参阅图3、图4所示，本实施例中，所述液晶面板20包括彩膜基板21、阵列基板23以及液晶层22；所述彩膜基板21设有多个像素单元210；所述阵列基板23与所述彩膜基板21相对设置；所述液晶层22设于所述阵列基板23和所述彩膜基板21之间。\n\n[0058]所述液晶面板20的驱动方式包括但不限于VA/TN/IPS/HVA等方式，所述像素电路25包含晶体管，所述晶体管的类型包括但不限于非晶硅(a-Si)、铟镓锌氧化物(IGZO)、低温多晶硅(LTPS)等，本实施例图中以底栅非晶硅晶体管为例。\n\n[0059]请参阅图1所示，本实施例中，所述彩膜基板21包括玻璃基板211、黑色矩阵层212以及平坦层214；所述黑色矩阵层212设于所述玻璃基板211的一侧表面；所述黑色矩阵层212在所述像素单元210内间隔设置；所述平坦层214设于所述黑色矩阵层212背离所述玻璃基板211一侧。所述彩膜基板21还包括公共电极层215，所述公共电极层215设于所述平坦层214背离所述玻璃基板211一侧。所述公共电极层215为透明材质，优选所述公共电极层215的材质为氧化铟锡。所述公共电极层215面向所述液晶层22的表面设置有配向层(图未绘示)。所述液晶面板20还包括支撑柱24，所述支撑柱24设于所述阵列基板23和所述彩膜基板21之间；所述支撑柱24与所述黑色矩阵层212对应设置。所述支撑柱用于支撑所述阵列基板23和所述彩膜基板21之间形成液晶盒间隙。所述液晶面板20还包括设于阵列基板23上的像素电路层29，设于像素电路层29中的像素电路25以及设于像素电路25上的像素电极26、上偏光片27以及下偏光片28；所述像素电极26设置有配向层(图未绘示)。所述透光子区电路223与像素电路25同样设在像素电路层29中。\n\n[0060]请参阅图3、图4所示，本实施例中，所述彩膜基板21包括玻璃基板211、黑色矩阵层212、色阻层213以及平坦层214；所述黑色矩阵层212设于所述玻璃基板211的一侧表面；所述黑色矩阵层212在所述像素单元210内间隔设置；所述色阻层213设于所述黑色矩阵层212之间；所述色阻层213设有红色色阻层R、绿色色阻层G、蓝色色阻层B；所述平坦层214设于所述黑色矩阵层212背离所述玻璃基板211一侧并覆盖所述色阻层213。所述彩膜基板21还包括公共电极层215，所述公共电极层215设于所述平坦层214背离所述玻璃基板211一侧。所述公共电极层215为透明材质，优选所述公共电极层215的材质为氧化铟锡。所述公共电极层215面向所述液晶层22的表面设置有配向层(图未绘示)。所述液晶面板20还包括支撑柱24，所述支撑柱24设于所述阵列基板23和所述彩膜基板21之间；所述支撑柱24与所述黑色矩阵层212对应设置。所述支撑柱用于支撑所述阵列基板23和所述彩膜基板21之间形成液晶盒间隙。所述液晶面板20还包括设于阵列基板23上的像素电路层29，设于像素电路层29中的像素电路25以及设于像素电路25上的像素电极26、上偏光片27以及下偏光片28；所述像素电极26设置有配向层(图未绘示)。所述透光子区电路223与像素电路25同样设在像素电路层29中。\n\n[0061]在制作所述液晶面板20时，在所述阵列基板23和所述彩膜基板21的表面制作所述配向层，然后涂框胶、对组、灌液晶，或在液晶中添加光配向材料并在灌液晶后对液晶进行配向与固化。\n\n[0062]可理解是，在所述透光区220对应位置不设置所述黑色矩阵层212、所述色阻层213及所述支撑柱24，仅有所述平坦层214、透明的所述公共电极层215及配向层，为了控制所述透光区220的透光与否，所述透光区220设置多个透光子区221，每个透光子区221包括一个或多个透明的透光子区电极222用以控制所述液晶面板20的所述透光子区221中的液晶偏转，以控制透光子区221的透光程度便于让背景光线通过。\n\n[0063]请参阅图2所示，图2为本实施例中提供的透明液晶显示器的第一种俯视图，所述像素单元210呈阵列式间隔排布；多个所述像素单元210形成多行，多个所述像素单元210形成多列；所述透光区220的透光子区221呈矩形，所述透光子区221设于相邻两行所述像素单元210之间。\n\n[0064]请参阅图8所示，图8为本实施例中提供的透明液晶显示器的第二种俯视图，所述像素单元210呈阵列式间隔排布；多个所述像素单元210形成多行，多个所述像素单元210形成多列；所述透光区220的透光子区221呈矩形，所述透光子区221设于相邻两列所述像素单元210之间。\n\n[0065]请参阅图9所示，图9为本实施例中提供的透明液晶显示器的第三种俯视图，所述像素单元210呈阵列式间隔排布；多个所述像素单元210形成多行，多个所述像素单元210形成多列；所述透光区220的所述透光子区221设于相邻两行所述像素单元210之间并且设于相邻两列所述像素单元210之间连接形成网状结构。\n\n[0066]请参阅图10所示，图10为本实施例中提供的透明液晶显示器的第四种俯视图，所述像素单元210呈阵列式间隔排布；多个所述像素单元210形成多列；所述透光区220的透光子区221呈矩形与所述像素单元210设于同一列。\n\n[0067]请参阅图11所示，图11为本实施例中提供的透明液晶显示器的第五种俯视图，所述像素单元210呈阵列式间隔排布；多个所述像素单元210形成多行；所述透光区220的透光子区221呈矩形，所述透光子区221与所述像素单元210设于同一行。\n\n[0068]请参阅图12所示，图12为本实施例中提供的透明液晶显示器的第六种俯视图，所述像素单元210呈阵列式间隔排布；多个所述像素单元210形成多行、多列；所述透光区220的透光子区221呈矩形，部分所述透光子区221与所述像素单元210设于同一行且部分所述透光子区221与所述像素单元210设于同一列。\n\n[0069]请参阅图13所示，图13为本实施例中提供的透明液晶显示器的第七种俯视图，所述像素单元210呈阵列式间隔排布；多个所述像素单元210形成多行、多列；所述透光区220的透光子区221呈倒T形，所述透光子区221设于所述像素单元210之间。\n\n[0070]本申请的所述透明液晶显示器100具有透明显示的功能，并且其透明度可控，可实现在不通电时呈现非透明状态，在通电时呈现透明状态。\n\n[0071]具体的，在所述像素单元210之间设计大量的透光区220，为了避免大面积的透光区220的液晶旋转控制不均匀，可将透光区220区分为多个透光子区221，每个透光子区221有自己的透光子区电极222。透光区220的所述透光子区电路223与像素电路25同样设在像素电路层29中。并且透过整个透光区220提供相同的电压或类似数据线与扫描线的主动矩阵控制走线设计，通过全局/区域控制信号控制所述透光子区电极222，即整个面板的透光区220可整体控制或分区域控制，用户可以通过用户界面的不同设置选择透明显示功能的模式。从而可通过信号的输入，实现透明度可控的功能。\n\n[0072]非透明模式为：所述液晶层22优选包含负性液晶。当透光区220的所述透光子区电极222无电压，负性液晶竖直分布在液晶层22中，液晶轴向竖直于所述阵列基板23或所述彩膜基板21；上偏光片27和下偏光片28呈正交方向，所以光线无法通过透光区220，此时显示屏为非透明状态，本专利中暂定此状态为“隐私模式”。亦即显示屏不上电时，透光区220内无电压，处于不透明状态，整个屏幕不透光。可以用在商业橱窗或店铺外墙，“非营业时间不透明”起隐私保护作用。\n\n[0073]透明模式为：当透光区220的所述透光子区电极222有电压时，负性液晶会由“竖直”状态变为“躺下”状态，具体“躺下”的程度由透光子区221的电压确定，屏幕的透明度可以调节。其中负性液晶“躺下”状态为液晶轴向平行于所述阵列基板23或所述彩膜基板21。\n\n[0074]所述透明液晶显示器100简化的设计是透光区220的所述透光子区电极222的电压输入仅两种模式，控制显示屏“透明模式”与“非透明模式”两种状态，便于用户一键式操作。当然也可根据可互需求，控制透光区220的所述透光子区电极222的电压输入值大小调节透光区220的透光度。\n\n[0075]其中，本申请以上述其中一个实施例的透明液晶显示器为例说明走线设置方式，如图14所示，采用第三种透明液晶显示器作为示例，其中在显示区域中包含RGB构成的像素单元210，在透光区220中尽量不设置金属走线与驱动电路、无黑色矩阵层212、无红色色阻层R、无绿色色阻层G、无蓝色色阻层B，在垂直方向的通路上存在透明的膜层。金属走线包括扫描线GL以及数据线DL，所述扫描线GL沿横向设置，所述数据线DL沿纵向设置。每一红色色阻层R、绿色色阻层G、蓝色色阻层B对应设置像素电路25。所述扫描线GL与所述像素单元210内的红色色阻层R、绿色色阻层G、蓝色色阻层B中的像素电路25连接，所述数据线DL与位于同一列的红色色阻层R、绿色色阻层G、蓝色色阻层B连接。\n\n[0076]透光子区电路223通过走线PDL与PGL提供讯号，其具体操作类似所述扫描线GL与所述数据线DL。\n\n[0077]其中整个屏幕的像素分布越稀疏或者透光区220占比越高，屏幕的透明度越高。但考虑到显示效果，需权衡显示屏的分辨率和透过率。\n\n[0078]在其他实施例中，也可为了避免在透光区220中金属走线的反光，设置黑色矩阵层212遮挡所述扫描线GL以及所述数据线DL。\n\n[0079]本发明的有益效果在于，提供一种透明液晶显示器，通过在相邻两个像素区之间设置透光区，并且进一步将背光面板与所述透光区对应设置透明区，可以做到黑画面或者低灰阶画面的背光低亮度工作，一方面可以降低功耗，另一方面可以提升面板的对比度。同时对应设置透光区和透明区，其透明度可以通过用户界面调整设置，在透明液晶显示器不通电时呈现非透明状态，在透明液晶显示器通电时呈现透明状态，符合商场/门店玻璃橱窗和玻璃墙壁多种透明显示器应用场景。\n\n[0080]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0081]以上对本申请实施例所提供的一种透明液晶显示器进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10967, 24021, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种能实现无缝拼接的拼接显示面板及显示装置。\n\n背景技术\n\n[0002]随着高阶TV市场对画质的要求越来越高，提升显示画质成为高阶TV的一个新需求。目前，8K OLED受限于补偿电路、IGZO(Indium Gallium Zinc Oxide，铟镓锌氧化物)背板技术及驱动设计等问题，尚需开发。而Mini LED/Micro-LED作为一个全新的显示技术，在亮度、功耗上较有机发光显示器(Organic Light-Emitting Diode，OLED)和双液晶(DullCell)显示器有优势，目前成为显示领域的一个热门方向。\n\n[0003]但随着Mini/Micro LED的像素间距(Pitch)越做越小，大尺寸拼接显示设备对于无缝拼接技术的需求越来越急迫。然而，目前玻璃基的Mini/Micro LED均需要采用覆晶薄膜(Chip On Film，COF)的绑定(Bonding)工艺将驱动通过COF与Mini/Micro LED基板连接在一起。由于像素间距的不断减小，Mini/Micro LED基板的绑定区或拼接处的走线空间越来越小，直至达到极限导致无法布线，进而限制了像素间距较的进一步减小。\n\n[0004]再者，在将多个小尺寸子显示面板拼接过程中，若相邻的小尺寸子显示面板之间拼接处的间距较大，从而容易在拼接处形成暗纹，降低拼接成的大尺寸拼接面板的显示效果，进而影响用户使用体验。\n\n[0005]此外，多个小尺寸子显示面板均需用到IC和COF，导致IC和COF使用量较高，驱动降低较高，而且也会存在由于驱动信号不同步导致的显示问题。\n\n[0006]因此，亟需提供一种拼接显示面板及显示装置，以解决上述技术问题。\n\n发明内容\n\n[0007]为了解决上述技术问题，本申请提供一种拼接显示面板及显示装置，能省略拼接处的COF，实现真正的无缝拼接；此外，所有子显示面板能同步驱动信号，解决了由于信号不同步导致的显示问题，还降低了驱动成本。\n\n[0008]为了实现上述目的，本申请所述拼接显示面板及显示装置采取了以下技术方案。\n\n[0009]本申请提供一种拼接显示面板，包括多个拼接在一起的子显示面板，在每相邻的两个所述子显示面板中设置有多条连接引线，所述连接引线用来在相邻的两个所述子显示面板之间传递驱动信号。\n\n[0010]可选地，在一些实施例中，每一所述子显示面板包括显示区和位于所述显示区至少一侧的非显示区；\n\n[0011]在相邻的两个所述子显示面板中，所述子显示面板的非显示区相邻设置；\n\n[0012]并且，所述连接引线由其中一所述子显示面板的非显示区的延伸至另一所述子显示面板的非显示区。\n\n[0013]可选地，在一些实施例中，每一所述子显示面板的非显示区中设置有多条绑定走线；\n\n[0014]在相邻的两个所述子显示面板中，其中一所述子显示面板的绑定走线与另一所述子显示面板的绑定走线一一对应；\n\n[0015]每一所述连接引线电连接于相对应的两条所述绑定走线。\n\n[0016]可选地，在一些实施例中，所述绑定走线由所述显示区的外边缘垂直延伸至所述非显示区的外边缘；\n\n[0017]相对应的两条所述绑定走线在相邻的两个所述子显示面板的拼接位置对位连接。\n\n[0018]可选地，在一些实施例中，在相邻的两个所述子显示面板之间设置有导电胶，所述导电胶用来实现相对应的两条所述绑定走线的连接。\n\n[0019]可选地，在一些实施例中，所述连接引线的一端设置在相对应的两条所述绑定走线中的其中一个上，所述连接引线的另一端设置在相对应的两条所述绑定走线中的另一个上。\n\n[0020]可选地，在一些实施例中，所述连接引线的线宽小于或等于所述绑定走线的线宽。\n\n[0021]可选地，在一些实施例中，所述连接引线的材料为金或银。\n\n[0022]可选地，在一些实施例中，所述子显示面板为Mini-LED子显示面板或Micro-LED子显示面板。\n\n[0023]相应地，本申请还提供一种显示装置，包括本申请的拼接显示面板以及覆晶薄膜；\n\n[0024]其中所述覆晶薄膜设置于所述拼接显示面板的外围，并绑定于所述子显示面板的侧面。\n\n[0025]与现有技术相比，本申请所述拼接显示面板及显示装置，通过引入设置于相邻的两个显示面板中的连接引线，利用连接引线在相邻的子显示面板的之间传输驱动信号，能省略设置相邻子显示面板之间的COF，减少拼接缝的宽度，实现真正的无缝拼接。同时，本申请方案中，可以只在整个拼接显示面板的最外围绑定COF即可，节省了IC、COF使用量，降低了驱动成本，又能使所有子显示面板驱动信号同步，避免了由于信号不同步导致的显示问题。\n\n附图说明\n\n[0026]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0027]图1为本申请拼接显示面板的平面示意图。\n\n[0028]图2为本申请显示装置的平面示意图。\n\n[0029]附图标记说明：\n\n[0030]100 拼接显示面板 200 覆晶薄膜\n\n[0031]20 连接引线 10 子显示面板\n\n[0032]110 显示区 120 非显示区\n\n[0033]11 绑定走线 12 信号走线\n\n[0034]13 发光元件 111 第一绑定走线\n\n[0035]112 第二绑定走线 21 第一连接引线\n\n[0036]22 第二连接引线\n\n具体实施方式\n\n[0037]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0038]图1为本申请拼接显示面板100的平面示意图。如图1所示，本申请的拼接显示面板100包括多个拼接在一起的子显示面板10。所述拼接显示面板100还包括连接引线20，所述连接引线20设置于相邻的两个子显示面板10中，用来在所述两个子显示面板10之间传输驱动信号。\n\n[0039]更具体来讲，在相邻的两个子显示面板10的拼接位置设置有多条连接引线20，所述绑定走线11用来将其中一所述子显示面板10的驱动信号传输至另一所述子显示面板10中。也就是说，一所述子显示面板10的驱动信号能经由连接引线20传递至另一相邻的子显示面板10。由此，相拼接的两个子显示面板10之间无需设置覆晶薄膜200，且不会影响到各子显示面板10的正常显示。\n\n[0040]因此说，在本申请的方案中，通过设置在相邻两个子显示面板10中的连接引线20，将其中子显示面板10的驱动信号传输至另一相邻的子显示面板10中，能省略原本应设置在拼接位置的覆晶薄膜200。更进一步地，本申请的拼接显示面板100，一方面使相邻两个子显示面板10的拼接间隙减小，实现了真正的无缝拼接，进而克服拼接间隙或绑定区较大对像素间距的限制；另一方面，还可以只在最外围布置驱动结构，减少IC和COF使用量，降低了驱动成本，与此同时，还将多个子显示面板10驱动信号同步，能避免显示不同步的问题。\n\n[0041]如图1所示，所述拼接显示面板100包括多个拼接在一起的子显示面板10。具体地，所述多个子显示面板10可以通过单排、双排或多排的方式拼接在一起。\n\n[0042]例如，所述子显示面板10的形状相同、并且所述多个子显示面板10的尺寸也相同。此时，多个所述子显示面板10可以以阵列排布的方式相互拼接在一起。\n\n[0043]例如，请进一步参考图1，在本实施例中，所述拼接显示面板100包括四个子显示面板10(为了便于区分，分别记为10a、10b、10c和10d)，所述子显示面板10按照两行两列的方式排布拼接。\n\n[0044]需要指出的是，为了清楚说明本申请的拼接显示面板100的技术方案，在附图中仅示意性地绘示四个子显示面板10a、10b、10c和10d，当然本申请并不限于此，在其他实施例中，所述子显示面板10的数量可根据实际需求设置。\n\n[0045]同样需要指出的是，本申请并未限定子显示面板10拼接方式。例如，在其他实施例中，可以将两个或多个子显示面板10同时绑定于另外一子显示面板10的同一侧。\n\n[0046]请参考图1，具体而言，针对每个子显示面板10，每个子显示面板10划分有显示区110和位于显示区外围120的非显示区120。如此设置，使得在相邻两个子显示面板10的中，一个所述子显示面板10的非显示区120与另一个显示面板10的非显示区120相邻，并将该两个子显示面板10的显示区110隔开。\n\n[0047]更进一步地，每个子显示面10包括阵列基板和阵列排布在阵列基板上的发光元件13。需要指出的是，为了清楚说明本申请的拼接显示面板100的技术方案，在附图和文字中仅示意性描述了子显示面板10的结构，而未限定子显示面板10的结构进行限定。\n\n[0048]请参考图1，其中所述阵列基板中设置有绑定走线11。也就是说，所述子显示面板10的绑定走线11设置于所述阵列基板中。所述绑定走线11用来实现各子显示面板10之间的绑定，或用来绑定覆晶薄膜200的绑定。\n\n[0049]而在本申请的方案中，采用绑定技术将两个子显示面板10之间的多条绑定走线11对应连接，这样在两个子显示面板10之间的拼接缝处就减少了螺丝等零件所占的空间，从而进一步减小了拼接显示面板100的拼接缝的宽度。不仅如此，当两个子显示面板10的多条绑定走线11对应相接后，外围的驱动结构能同步对多个子显示面板10进行驱动，相比于现有的拼接显示面板中，两个子显示面板10之间没有对应连接，本实施例的拼接显示面板100在驱动各子显示面板10时，画面显示的同步性更好。\n\n[0050]在具体工作过程中，所述绑定走线11能由外部接收驱动信号，并将所述驱动信号传递至所述阵列基板，以控制所述发光元件13的发光或显示。而具体到本申请中，所述绑定走线11可以从覆晶薄膜200或者相邻的另一子显示面板10的绑定走线11接收驱动信号。\n\n[0051]例如，在所述子显示面板10a中，左侧边处和所述上侧边处的多个绑定走线11，用来绑定覆晶薄膜200，右侧边处的多个绑定走线11用来与子显示面板10b的绑定走线11绑定，下侧边处的绑定走线11用来与所述子显示面板10c的多个绑定走线11绑定。\n\n[0052]请参考图1，所述绑定走线11位于所述阵列基板的非显示区120中，并且所述绑定走线11由所述显示区110的外边缘垂直延伸至所述非显示区120的外边缘。相应地，依据所述非显示区120的外边缘的延伸方向，所述绑定走线11包括水平设置的第一绑定走线111和竖直设置的第二绑定走线112。这种布置方式，也完全满足相邻子显示面板10的绑定走线11之间进行拼接的需求。\n\n[0053]具体地，所述绑定走线11包括水平设置的第一绑定走线111和竖直设置的第二绑定走线112。其中所述第一绑定走线111用于水平方向上相邻的两个子显示面板10之间的绑定。所述第二绑定走线112用于在竖直方向上相邻的两个子显示面板10之间的绑定。\n\n[0054]例如，请参考图1，所述子显示面板10a和所述子显示面板10b之通过水平方向的第一绑定走线111对位拼接。所述子显示面板10a和所述子显示面板10c之通过水平方向的第二绑定走线112对位拼接。\n\n[0055]具体地，所述多个绑定走线11在与其延伸方向相垂直的方向上间隔排布。更具体来讲，所述绑定走线11沿所述非显示区120的侧边方向间隔排布。如此设置，使得相拼接的两个子显示面板10的多条绑定走线11在该两个子显示面板10的相重叠边侧面处一一对位连接。\n\n[0056]更直白的说，在所述两个子显示面板的拼接位置10，相对应的两条绑定走线11的边侧面对位贴合。\n\n[0057]具体地，相对应的两条绑定走线11的延伸方向相同。更直白的说，相对应的两条绑定走线11的排布方向与其所属的两个子显示面板10的排布方向相同。\n\n[0058]在一优选实施例中，相对应的两条绑定走线11的线宽一致，以便于对位拼接。\n\n[0059]具体地，在相邻两个子显示面板10的之间设置有导电胶(附图中未绘示)，所述导电胶用来实现相对应的两条绑定走线11的连接。换句话说，相对应的两条绑定走线11的侧面之间通过导电胶连接。\n\n[0060]例如，所述导电胶以与绑定走线11相对应的方式设置。更具来讲，在相邻的两个子显示面板10的相重叠的边侧面处，所述导电胶仅布置在所述绑定走线11的边侧面上，以实现相对应绑定走线11的边侧面间的对位拼接。如此布置，能避免同一侧面处的相邻的两条绑定走线11发生之间相互干扰。\n\n[0061]在另一些实施例中，在相邻的两个子显示面板10之间设置密封胶，使密封胶与所述导电胶相互间隔设置。如此，所述密封胶能增强拼接显示面板100的强度，还能防止相邻的导电胶之间相互连接。\n\n[0062]具体地，所述绑定走线11设置于阵列基板的不同膜层之中。也就是说，所述绑定走线11可以与所述薄膜晶体管的不同膜层同层布置。如此布置，能充分利用阵列基板的立体空间，能减少非显示区的宽度，还能避免将走线集中于同一膜层导致的短路或信号串扰的问题。再者，从子显示面板10之间的绑定角度来看，将绑定走线11设置于不同的膜层中，还能增加相应绑定走线11之间的对接的面积，能增加相应对接的绑定走线11之间的导通面积，降低电阻，另一方面，还能在相邻的两个子显示面板10之间同时形成多条信号传输通道，增加了信号传输的稳定性。\n\n[0063]进一步地，所述阵列基板还包括信号走线、薄膜晶体管、和绑定电极。其中所述绑定电极连接至薄膜晶体管，所述薄膜晶体管电连接至信号走线，而所述信号走线电连接至绑定走线11。由此，所述绑定走线11内的驱动信号经由所述信号走线、所述薄膜晶体管和所述绑定电极传输至发光元件13。\n\n[0064]如图2所示，所述信号走线12设置在显示区110内，并且所述信号走线12连接于所述绑定走线11，用来将绑定走线11的驱动信号传输至薄膜晶体管。\n\n[0065]具体地，所述信号走线12为栅线(Gate Line)和数据线(Data Line)。其中所述栅线连接于薄膜晶体管的栅极，所述数据线连接至薄膜晶体管的源极。\n\n[0066]在其它实施例中，所述信号走线还可以为但不限于，电源线Vdd、公共电压线Vss、扫描线Vscan、感测线Vsense或参考电压线Vref。\n\n[0067]具体地，所述薄膜晶体管位于所述显示区110中，具有开关或驱动的功能。具体地，所述薄膜晶体管可包括栅极、有源层、源极和漏极，此源极和漏极分别与有源层两侧的掺杂区连接。需要说明的是，栅极与有源层之间还可设置栅绝缘层，以使栅极与有源层之间相互绝缘。但需要指出的是，本申请并未限定所述薄膜晶体管的类型或结构，可以根据实际显示需求更改或选择。\n\n[0068]具体地，所述多个绑定电极阵列排布在显示区110中，用来对发光元件13供电进行驱动。换句话说，发光元件13通过绑定电极与薄膜晶体管的漏极电连接。\n\n[0069]如图1所示，所述多个发光元件13设置于所述阵列基板的显示区110中。具体地，所述发光元件13绑定于所述阵列基板的绑定电极上。\n\n[0070]在具体实施时，所述发光元件13为微型发光二极管(Micro LED)或迷你发光二极管(Mini LED)。Mini LED的尺寸是介于传统LED的尺寸与Micro LED尺寸之间的。还需要指出的是，本申请的发光元件13，并不限于此。也就是说，发光元件13的结构可以根据显示的不同需求实时进行更换。\n\n[0071]例如，如图1所示，在本实施例中，所述发光元件13为Micro LED或Mini LED时，所述发光元件13能通过巨量转移的方法转移到阵列基板上，并通过所述发光元件13的键合电极绑定于所述阵列基板的驱动电极上。\n\n[0072]请参考图1，在本实施例中，所述子显示面板10形成至少一个像素单元。通常像素单元中的发光元件13的数量为至少3个，所述像素单元包括红光发光元件13、蓝光发光元件13以及绿光发光元件13。也就是说，像素单元中的至少包括1个红光发光元件13、1个蓝光发光元件13以及1个绿光发光元件13。\n\n[0073]在本实施例中，所述三个发光元件13横向排列成一排。在其他实施例中，所述三个发光元件13纵向排列成一列。需要说明的是，为了更加直观地表现出本申请子显示面板10的结构。图1和图2中并未示意所述阵列基板和所述发光元件13的膜层结构。但所属领域的技术人员应当理解，所述阵列基板和所述发光元件13实际包含的膜层结构，并不限于此。\n\n[0074]请参考图1，所述连接引线20位于相邻的两个子显示面板10的拼接位置，并由其中一所述子显示面板10的非显示区120连续的延伸至另一所述子显示面板10的非显示区120中，用来将其中一所述子显示面板10的驱动信号传输至另一子显示面板10。\n\n[0075]显然地，通过布置所述连接引线20，能实现相邻两个子显示面板10之间的信号传输。同时，所述连接引线20也能增加相对应的两个绑定走线11之间的导通路径，提高驱动信号传输的稳定性，也降低了导通电阻。此外，连接引线20也增加了绑定走线11之间的绑定的稳定性，提高了相邻两个子显示面板10的拼接的强度和绑定稳定性。\n\n[0076]具体地，所述连接引线20相对两端分别连接至相对应的两条绑定走线11上，以将其中一条绑定走线11的驱动信号传输至相对应的另一条绑定走线11中，从而实现将其中一子显示面板10的驱动信号传输至另一子显示面板10的目的。\n\n[0077]更具体地，在本实施例中，所述连接引线20一端直接地形成于其中绑定走线11的表面上，所述连接引线20的另一端形成在相对应的另一条绑定走线11上。\n\n[0078]更进一步地，所述连接引线20的线宽小于所述绑定走线11的线宽。所述连接引线20在所述拼接显示面板100上的正投影位于相应对接的两条所述绑定走线11上。\n\n[0079]在其他实施例中，所述连接引线20和所述绑定走线11可以被介电层隔开，然后通过过孔实现电性连接。\n\n[0080]更具体地，在任意相邻的两个子显示面板10中，所述连接引线20的延伸方向与相邻的两个所述子显示面板10的排列方向相同。\n\n[0081]例如，在本实施例中，所述连接引线20包括水平延伸的第一连接引线21和竖直延伸的第二连接引线22。其中在水平排列的子显示面板10a,10b中，布置有第一连接引线21。在竖直排列的子显示面板10a，10c中，布置有第二连接引线22。\n\n[0082]具体地，所述连接引线20的材料为金、银或石墨烯。在一实施例中，所述连接引线20的材料为Ag。此时可以采用。在另外一些实施例中，述连接引线20也可以选用石墨烯等便于进行转印和喷印工艺的导电材料，具体的材料可以根据实际情况进行选择，此处不做限制。在其他一些实施例中，也可以通过先沉积导电材料，然后采用激光雕刻的方式形成图案化的连接引线20。\n\n[0083]基于相同的发明构思，本申请还提供一种显示装置，所述显示装置包括本申请的拼接显示面板100和覆晶薄膜200。\n\n[0084]如图2所示，所述覆晶薄膜200位于所述拼接显示面板100的外围，并且所述覆晶薄膜200绑定于所述拼接显示面板100外侧面上。也就是说，本申请的显示装置中，所述覆晶薄膜200仅布置在整个拼接显示面板100的最外围，而避免了在相邻的子显示面板10之间设置覆晶薄膜200。\n\n[0085]具体实施时，所述覆晶薄膜200包括用于向栅线传输驱动信号的覆晶薄膜200和用于向数据线传输驱动信号的覆晶薄膜200。\n\n[0086]以上对本申请实施例所提供的一种拼接显示面板及显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种能实现无缝拼接的拼接显示面板及显示装置。\n\n背景技术\n\n[0002]随着高阶TV市场对画质的要求越来越高，提升显示画质成为高阶TV的一个新需求。目前，8K OLED受限于补偿电路、IGZO(Indium Gallium Zinc Oxide，铟镓锌氧化物)背板技术及驱动设计等问题，尚需开发。而Mini LED/Micro-LED作为一个全新的显示技术，在亮度、功耗上较有机发光显示器(Organic Light-Emitting Diode，OLED)和双液晶(DullCell)显示器有优势，目前成为显示领域的一个热门方向。\n\n[0003]但随着Mini/Micro LED的像素间距(Pitch)越做越小，大尺寸拼接显示设备对于无缝拼接技术的需求越来越急迫。然而，目前玻璃基的Mini/Micro LED均需要采用覆晶薄膜(Chip On Film，COF)的绑定(Bonding)工艺将驱动通过COF与Mini/Micro LED基板连接在一起。由于像素间距的不断减小，Mini/Micro LED基板的绑定区或拼接处的走线空间越来越小，直至达到极限导致无法布线，进而限制了像素间距较的进一步减小。\n\n[0004]再者，在将多个小尺寸子显示面板拼接过程中，若相邻的小尺寸子显示面板之间拼接处的间距较大，从而容易在拼接处形成暗纹，降低拼接成的大尺寸拼接面板的显示效果，进而影响用户使用体验。\n\n[0005]此外，多个小尺寸子显示面板均需用到IC和COF，导致IC和COF使用量较高，驱动降低较高，而且也会存在由于驱动信号不同步导致的显示问题。\n\n[0006]因此，亟需提供一种拼接显示面板及显示装置，以解决上述技术问题。\n\n发明内容\n\n[0007]为了解决上述技术问题，本申请提供一种拼接显示面板及显示装置，能省略拼接处的COF，实现真正的无缝拼接；此外，所有子显示面板能同步驱动信号，解决了由于信号不同步导致的显示问题，还降低了驱动成本。\n\n[0008]为了实现上述目的，本申请所述拼接显示面板及显示装置采取了以下技术方案。\n\n[0009]本申请提供一种拼接显示面板，包括多个拼接在一起的子显示面板，在每相邻的两个所述子显示面板中设置有多条连接引线，所述连接引线用来在相邻的两个所述子显示面板之间传递驱动信号。\n\n[0010]可选地，在一些实施例中，每一所述子显示面板包括显示区和位于所述显示区至少一侧的非显示区；\n\n[0011]在相邻的两个所述子显示面板中，所述子显示面板的非显示区相邻设置；\n\n[0012]并且，所述连接引线由其中一所述子显示面板的非显示区的延伸至另一所述子显示面板的非显示区。\n\n[0013]可选地，在一些实施例中，每一所述子显示面板的非显示区中设置有多条绑定走线；\n\n[0014]在相邻的两个所述子显示面板中，其中一所述子显示面板的绑定走线与另一所述子显示面板的绑定走线一一对应；\n\n[0015]每一所述连接引线电连接于相对应的两条所述绑定走线。\n\n[0016]可选地，在一些实施例中，所述绑定走线由所述显示区的外边缘垂直延伸至所述非显示区的外边缘；\n\n[0017]相对应的两条所述绑定走线在相邻的两个所述子显示面板的拼接位置对位连接。\n\n[0018]可选地，在一些实施例中，在相邻的两个所述子显示面板之间设置有导电胶，所述导电胶用来实现相对应的两条所述绑定走线的连接。\n\n[0019]可选地，在一些实施例中，所述连接引线的一端设置在相对应的两条所述绑定走线中的其中一个上，所述连接引线的另一端设置在相对应的两条所述绑定走线中的另一个上。\n\n[0020]可选地，在一些实施例中，所述连接引线的线宽小于或等于所述绑定走线的线宽。\n\n[0021]可选地，在一些实施例中，所述连接引线的材料为金或银。\n\n[0022]可选地，在一些实施例中，所述子显示面板为Mini-LED子显示面板或Micro-LED子显示面板。\n\n[0023]相应地，本申请还提供一种显示装置，包括本申请的拼接显示面板以及覆晶薄膜；\n\n[0024]其中所述覆晶薄膜设置于所述拼接显示面板的外围，并绑定于所述子显示面板的侧面。\n\n[0025]与现有技术相比，本申请所述拼接显示面板及显示装置，通过引入设置于相邻的两个显示面板中的连接引线，利用连接引线在相邻的子显示面板的之间传输驱动信号，能省略设置相邻子显示面板之间的COF，减少拼接缝的宽度，实现真正的无缝拼接。同时，本申请方案中，可以只在整个拼接显示面板的最外围绑定COF即可，节省了IC、COF使用量，降低了驱动成本，又能使所有子显示面板驱动信号同步，避免了由于信号不同步导致的显示问题。\n\n附图说明\n\n[0026]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0027]图1为本申请拼接显示面板的平面示意图。\n\n[0028]图2为本申请显示装置的平面示意图。\n\n[0029]附图标记说明：\n\n[0030]100 拼接显示面板 200 覆晶薄膜\n\n[0031]20 连接引线 10 子显示面板\n\n[0032]110 显示区 120 非显示区\n\n[0033]11 绑定走线 12 信号走线\n\n[0034]13 发光元件 111 第一绑定走线\n\n[0035]112 第二绑定走线 21 第一连接引线\n\n[0036]22 第二连接引线\n\n具体实施方式\n\n[0037]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0038]图1为本申请拼接显示面板100的平面示意图。如图1所示，本申请的拼接显示面板100包括多个拼接在一起的子显示面板10。所述拼接显示面板100还包括连接引线20，所述连接引线20设置于相邻的两个子显示面板10中，用来在所述两个子显示面板10之间传输驱动信号。\n\n[0039]更具体来讲，在相邻的两个子显示面板10的拼接位置设置有多条连接引线20，所述绑定走线11用来将其中一所述子显示面板10的驱动信号传输至另一所述子显示面板10中。也就是说，一所述子显示面板10的驱动信号能经由连接引线20传递至另一相邻的子显示面板10。由此，相拼接的两个子显示面板10之间无需设置覆晶薄膜200，且不会影响到各子显示面板10的正常显示。\n\n[0040]因此说，在本申请的方案中，通过设置在相邻两个子显示面板10中的连接引线20，将其中子显示面板10的驱动信号传输至另一相邻的子显示面板10中，能省略原本应设置在拼接位置的覆晶薄膜200。更进一步地，本申请的拼接显示面板100，一方面使相邻两个子显示面板10的拼接间隙减小，实现了真正的无缝拼接，进而克服拼接间隙或绑定区较大对像素间距的限制；另一方面，还可以只在最外围布置驱动结构，减少IC和COF使用量，降低了驱动成本，与此同时，还将多个子显示面板10驱动信号同步，能避免显示不同步的问题。\n\n[0041]如图1所示，所述拼接显示面板100包括多个拼接在一起的子显示面板10。具体地，所述多个子显示面板10可以通过单排、双排或多排的方式拼接在一起。\n\n[0042]例如，所述子显示面板10的形状相同、并且所述多个子显示面板10的尺寸也相同。此时，多个所述子显示面板10可以以阵列排布的方式相互拼接在一起。\n\n[0043]例如，请进一步参考图1，在本实施例中，所述拼接显示面板100包括四个子显示面板10(为了便于区分，分别记为10a、10b、10c和10d)，所述子显示面板10按照两行两列的方式排布拼接。\n\n[0044]需要指出的是，为了清楚说明本申请的拼接显示面板100的技术方案，在附图中仅示意性地绘示四个子显示面板10a、10b、10c和10d，当然本申请并不限于此，在其他实施例中，所述子显示面板10的数量可根据实际需求设置。\n\n[0045]同样需要指出的是，本申请并未限定子显示面板10拼接方式。例如，在其他实施例中，可以将两个或多个子显示面板10同时绑定于另外一子显示面板10的同一侧。\n\n[0046]请参考图1，具体而言，针对每个子显示面板10，每个子显示面板10划分有显示区110和位于显示区外围120的非显示区120。如此设置，使得在相邻两个子显示面板10的中，一个所述子显示面板10的非显示区120与另一个显示面板10的非显示区120相邻，并将该两个子显示面板10的显示区110隔开。\n\n[0047]更进一步地，每个子显示面10包括阵列基板和阵列排布在阵列基板上的发光元件13。需要指出的是，为了清楚说明本申请的拼接显示面板100的技术方案，在附图和文字中仅示意性描述了子显示面板10的结构，而未限定子显示面板10的结构进行限定。\n\n[0048]请参考图1，其中所述阵列基板中设置有绑定走线11。也就是说，所述子显示面板10的绑定走线11设置于所述阵列基板中。所述绑定走线11用来实现各子显示面板10之间的绑定，或用来绑定覆晶薄膜200的绑定。\n\n[0049]而在本申请的方案中，采用绑定技术将两个子显示面板10之间的多条绑定走线11对应连接，这样在两个子显示面板10之间的拼接缝处就减少了螺丝等零件所占的空间，从而进一步减小了拼接显示面板100的拼接缝的宽度。不仅如此，当两个子显示面板10的多条绑定走线11对应相接后，外围的驱动结构能同步对多个子显示面板10进行驱动，相比于现有的拼接显示面板中，两个子显示面板10之间没有对应连接，本实施例的拼接显示面板100在驱动各子显示面板10时，画面显示的同步性更好。\n\n[0050]在具体工作过程中，所述绑定走线11能由外部接收驱动信号，并将所述驱动信号传递至所述阵列基板，以控制所述发光元件13的发光或显示。而具体到本申请中，所述绑定走线11可以从覆晶薄膜200或者相邻的另一子显示面板10的绑定走线11接收驱动信号。\n\n[0051]例如，在所述子显示面板10a中，左侧边处和所述上侧边处的多个绑定走线11，用来绑定覆晶薄膜200，右侧边处的多个绑定走线11用来与子显示面板10b的绑定走线11绑定，下侧边处的绑定走线11用来与所述子显示面板10c的多个绑定走线11绑定。\n\n[0052]请参考图1，所述绑定走线11位于所述阵列基板的非显示区120中，并且所述绑定走线11由所述显示区110的外边缘垂直延伸至所述非显示区120的外边缘。相应地，依据所述非显示区120的外边缘的延伸方向，所述绑定走线11包括水平设置的第一绑定走线111和竖直设置的第二绑定走线112。这种布置方式，也完全满足相邻子显示面板10的绑定走线11之间进行拼接的需求。\n\n[0053]具体地，所述绑定走线11包括水平设置的第一绑定走线111和竖直设置的第二绑定走线112。其中所述第一绑定走线111用于水平方向上相邻的两个子显示面板10之间的绑定。所述第二绑定走线112用于在竖直方向上相邻的两个子显示面板10之间的绑定。\n\n[0054]例如，请参考图1，所述子显示面板10a和所述子显示面板10b之通过水平方向的第一绑定走线111对位拼接。所述子显示面板10a和所述子显示面板10c之通过水平方向的第二绑定走线112对位拼接。\n\n[0055]具体地，所述多个绑定走线11在与其延伸方向相垂直的方向上间隔排布。更具体来讲，所述绑定走线11沿所述非显示区120的侧边方向间隔排布。如此设置，使得相拼接的两个子显示面板10的多条绑定走线11在该两个子显示面板10的相重叠边侧面处一一对位连接。\n\n[0056]更直白的说，在所述两个子显示面板的拼接位置10，相对应的两条绑定走线11的边侧面对位贴合。\n\n[0057]具体地，相对应的两条绑定走线11的延伸方向相同。更直白的说，相对应的两条绑定走线11的排布方向与其所属的两个子显示面板10的排布方向相同。\n\n[0058]在一优选实施例中，相对应的两条绑定走线11的线宽一致，以便于对位拼接。\n\n[0059]具体地，在相邻两个子显示面板10的之间设置有导电胶(附图中未绘示)，所述导电胶用来实现相对应的两条绑定走线11的连接。换句话说，相对应的两条绑定走线11的侧面之间通过导电胶连接。\n\n[0060]例如，所述导电胶以与绑定走线11相对应的方式设置。更具来讲，在相邻的两个子显示面板10的相重叠的边侧面处，所述导电胶仅布置在所述绑定走线11的边侧面上，以实现相对应绑定走线11的边侧面间的对位拼接。如此布置，能避免同一侧面处的相邻的两条绑定走线11发生之间相互干扰。\n\n[0061]在另一些实施例中，在相邻的两个子显示面板10之间设置密封胶，使密封胶与所述导电胶相互间隔设置。如此，所述密封胶能增强拼接显示面板100的强度，还能防止相邻的导电胶之间相互连接。\n\n[0062]具体地，所述绑定走线11设置于阵列基板的不同膜层之中。也就是说，所述绑定走线11可以与所述薄膜晶体管的不同膜层同层布置。如此布置，能充分利用阵列基板的立体空间，能减少非显示区的宽度，还能避免将走线集中于同一膜层导致的短路或信号串扰的问题。再者，从子显示面板10之间的绑定角度来看，将绑定走线11设置于不同的膜层中，还能增加相应绑定走线11之间的对接的面积，能增加相应对接的绑定走线11之间的导通面积，降低电阻，另一方面，还能在相邻的两个子显示面板10之间同时形成多条信号传输通道，增加了信号传输的稳定性。\n\n[0063]进一步地，所述阵列基板还包括信号走线、薄膜晶体管、和绑定电极。其中所述绑定电极连接至薄膜晶体管，所述薄膜晶体管电连接至信号走线，而所述信号走线电连接至绑定走线11。由此，所述绑定走线11内的驱动信号经由所述信号走线、所述薄膜晶体管和所述绑定电极传输至发光元件13。\n\n[0064]如图2所示，所述信号走线12设置在显示区110内，并且所述信号走线12连接于所述绑定走线11，用来将绑定走线11的驱动信号传输至薄膜晶体管。\n\n[0065]具体地，所述信号走线12为栅线(Gate Line)和数据线(Data Line)。其中所述栅线连接于薄膜晶体管的栅极，所述数据线连接至薄膜晶体管的源极。\n\n[0066]在其它实施例中，所述信号走线还可以为但不限于，电源线Vdd、公共电压线Vss、扫描线Vscan、感测线Vsense或参考电压线Vref。\n\n[0067]具体地，所述薄膜晶体管位于所述显示区110中，具有开关或驱动的功能。具体地，所述薄膜晶体管可包括栅极、有源层、源极和漏极，此源极和漏极分别与有源层两侧的掺杂区连接。需要说明的是，栅极与有源层之间还可设置栅绝缘层，以使栅极与有源层之间相互绝缘。但需要指出的是，本申请并未限定所述薄膜晶体管的类型或结构，可以根据实际显示需求更改或选择。\n\n[0068]具体地，所述多个绑定电极阵列排布在显示区110中，用来对发光元件13供电进行驱动。换句话说，发光元件13通过绑定电极与薄膜晶体管的漏极电连接。\n\n[0069]如图1所示，所述多个发光元件13设置于所述阵列基板的显示区110中。具体地，所述发光元件13绑定于所述阵列基板的绑定电极上。\n\n[0070]在具体实施时，所述发光元件13为微型发光二极管(Micro LED)或迷你发光二极管(Mini LED)。Mini LED的尺寸是介于传统LED的尺寸与Micro LED尺寸之间的。还需要指出的是，本申请的发光元件13，并不限于此。也就是说，发光元件13的结构可以根据显示的不同需求实时进行更换。\n\n[0071]例如，如图1所示，在本实施例中，所述发光元件13为Micro LED或Mini LED时，所述发光元件13能通过巨量转移的方法转移到阵列基板上，并通过所述发光元件13的键合电极绑定于所述阵列基板的驱动电极上。\n\n[0072]请参考图1，在本实施例中，所述子显示面板10形成至少一个像素单元。通常像素单元中的发光元件13的数量为至少3个，所述像素单元包括红光发光元件13、蓝光发光元件13以及绿光发光元件13。也就是说，像素单元中的至少包括1个红光发光元件13、1个蓝光发光元件13以及1个绿光发光元件13。\n\n[0073]在本实施例中，所述三个发光元件13横向排列成一排。在其他实施例中，所述三个发光元件13纵向排列成一列。需要说明的是，为了更加直观地表现出本申请子显示面板10的结构。图1和图2中并未示意所述阵列基板和所述发光元件13的膜层结构。但所属领域的技术人员应当理解，所述阵列基板和所述发光元件13实际包含的膜层结构，并不限于此。\n\n[0074]请参考图1，所述连接引线20位于相邻的两个子显示面板10的拼接位置，并由其中一所述子显示面板10的非显示区120连续的延伸至另一所述子显示面板10的非显示区120中，用来将其中一所述子显示面板10的驱动信号传输至另一子显示面板10。\n\n[0075]显然地，通过布置所述连接引线20，能实现相邻两个子显示面板10之间的信号传输。同时，所述连接引线20也能增加相对应的两个绑定走线11之间的导通路径，提高驱动信号传输的稳定性，也降低了导通电阻。此外，连接引线20也增加了绑定走线11之间的绑定的稳定性，提高了相邻两个子显示面板10的拼接的强度和绑定稳定性。\n\n[0076]具体地，所述连接引线20相对两端分别连接至相对应的两条绑定走线11上，以将其中一条绑定走线11的驱动信号传输至相对应的另一条绑定走线11中，从而实现将其中一子显示面板10的驱动信号传输至另一子显示面板10的目的。\n\n[0077]更具体地，在本实施例中，所述连接引线20一端直接地形成于其中绑定走线11的表面上，所述连接引线20的另一端形成在相对应的另一条绑定走线11上。\n\n[0078]更进一步地，所述连接引线20的线宽小于所述绑定走线11的线宽。所述连接引线20在所述拼接显示面板100上的正投影位于相应对接的两条所述绑定走线11上。\n\n[0079]在其他实施例中，所述连接引线20和所述绑定走线11可以被介电层隔开，然后通过过孔实现电性连接。\n\n[0080]更具体地，在任意相邻的两个子显示面板10中，所述连接引线20的延伸方向与相邻的两个所述子显示面板10的排列方向相同。\n\n[0081]例如，在本实施例中，所述连接引线20包括水平延伸的第一连接引线21和竖直延伸的第二连接引线22。其中在水平排列的子显示面板10a,10b中，布置有第一连接引线21。在竖直排列的子显示面板10a，10c中，布置有第二连接引线22。\n\n[0082]具体地，所述连接引线20的材料为金、银或石墨烯。在一实施例中，所述连接引线20的材料为Ag。此时可以采用。在另外一些实施例中，述连接引线20也可以选用石墨烯等便于进行转印和喷印工艺的导电材料，具体的材料可以根据实际情况进行选择，此处不做限制。在其他一些实施例中，也可以通过先沉积导电材料，然后采用激光雕刻的方式形成图案化的连接引线20。\n\n[0083]基于相同的发明构思，本申请还提供一种显示装置，所述显示装置包括本申请的拼接显示面板100和覆晶薄膜200。\n\n[0084]如图2所示，所述覆晶薄膜200位于所述拼接显示面板100的外围，并且所述覆晶薄膜200绑定于所述拼接显示面板100外侧面上。也就是说，本申请的显示装置中，所述覆晶薄膜200仅布置在整个拼接显示面板100的最外围，而避免了在相邻的子显示面板10之间设置覆晶薄膜200。\n\n[0085]具体实施时，所述覆晶薄膜200包括用于向栅线传输驱动信号的覆晶薄膜200和用于向数据线传输驱动信号的覆晶薄膜200。\n\n[0086]以上对本申请实施例所提供的一种拼接显示面板及显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10968, 24022, '技术领域\n\n[0001]本申请涉及拼接显示技术领域，具体涉及一种拼接箱及拼接显示屏。\n\n背景技术\n\n[0002]现阶段，由于我国的监控技术水平以及数据收集能力得到了一定程度的提升。显示终端能否准确的将收集到的数据及时呈现在显示墙上直接关系到上级部门决策的合理性，相当重要。为满足市场的需求，显示终端的技术人员需要改进现有技术，使之朝着无缝化、高清化方向发展，随即，LED(英文全称：Light-Emitting Diode，发光二极管)的拼接显示屏就应运而生了。\n\n[0003]然而，目前的加工工艺无法保证拼接显示屏的拼接箱的平面度为零，且多个箱体拼接组装的过程中，箱体之间会存在高低差或者缝隙，影响拼接显示屏的显示效果。因此需要寻求一种新型的拼接显示屏以解决上述问题。\n\n发明内容\n\n[0004]本发明的目的是提供一种拼接箱及拼接显示屏，其能够解决现有拼接显示屏存在的箱体之间存在高低差或者缝隙，影响拼接显示屏的显示效果等问题。\n\n[0005]为了解决上述问题，本发明提供了一种拼接箱，其包括：多个箱体，每一所述箱体均包括：基座以及位于所述基座的四个角落处的连接底座；所述基座具有相对设置的第一表面及第二表面；所述连接底座凸出于所述基座的第一表面上；每一所述连接底座均设有至少一个第一紧固孔；拼接垫片，覆盖于至少两个相邻的所述连接底座上；所述拼接垫片上贯穿设有多个第二紧固孔，所述拼接垫片上的所述第二紧固孔与该所述拼接垫片覆盖的所述连接底座上的所述第一紧固孔一一对应；所述拼接垫片在对应于其覆盖的每一所述连接底座的位置处均贯穿设有至少一个第一调节孔；多个第一紧固件，每一所述第一紧固件均穿过一个所述第二紧固孔以及一个所述第一紧固孔；以及多个第一调节件，每一所述第一调节件均穿过一个所述第一调节孔，抵接至一个所述连接底座远离所述第一表面的侧面。\n\n[0006]进一步的，每一所述箱体还包括：第一侧板，凸出于所述基座的第一表面上；第二侧板，凸出于所述基座的第一表面上，且与所述第一侧板相对设置；其中，所述第一侧板上贯穿设有至少一个第三紧固孔，所述第二侧板上贯穿设有至少一个第四紧固孔，所述第三紧固孔与所述第四紧固孔一一对应；所述拼接箱还包括多个第二紧固件，每一所述第二紧固件均穿过一个所述箱体的第三紧固孔及另一个所述箱体的第四紧固孔。\n\n[0007]进一步的，每一所述箱体还包括：第三侧板，凸出于所述基座的第一表面上，且垂直于所述第一侧板；第四侧板，凸出于所述基座的第一表面上，且与所述第三侧板相对设置；其中，所述第三侧板上贯穿设有至少一个第五紧固孔，所述第四侧板上贯穿设有至少一个第六紧固孔，所述第五紧固孔与所述第六紧固孔一一对应；所述拼接箱还包括多个第三紧固件，每一所述第三紧固件均穿过一个所述箱体的第五紧固孔及另一个所述箱体的第六紧固孔。\n\n[0008]进一步的，所述第一侧板上还贯穿设有至少一个第二调节孔；所述拼接箱还包括多个第二调节件，每一所述第二调节件均穿过一个所述箱体的所述第二调节孔，抵接至与该箱体相邻的另一个箱体的所述第二侧板的外表面。\n\n[0009]进一步的，所述第三侧板上还贯穿设有至少一个第三调节孔；所述拼接箱还包括多个第三调节件，每一所述第三调节件均穿过一个所述箱体的所述第三调节孔，抵接至与该箱体相邻的另一个箱体的所述第四侧板的外表面。\n\n[0010]进一步的，所述拼接箱还包括：至少一个第一卡接公端，位于所述第一侧板的外表面上；至少一个第一卡接母端，位于所述第二侧板的外表面上，且与所述第一卡接公端一一对应；每一所述箱体的第一卡接公端均嵌合于与该箱体相邻的箱体的第一卡接母端。\n\n[0011]进一步的，所述拼接箱还包括：至少一个第二卡接公端，位于所述第三侧板的外表面上；至少一个第二卡接母端，位于所述第四侧板的外表面上，且与所述第二卡接公端一一对应；每一所述箱体的第二卡接公端均嵌合于与该箱体相邻的箱体的第二卡接母端。\n\n[0012]为了解决上述问题，本发明还提供了一种拼接显示屏，其包括本发明涉及的拼接箱。\n\n[0013]进一步的，所述拼接显示屏还包括：多个显示单元，阵列排布于所述箱体的第二表面上。\n\n[0014]进一步的，所述显示单元包括：mini LED显示单元、micro LED显示单元及OLED显示单元中的一种。\n\n[0015]本发明的优点是：本发明涉及一种拼接箱及拼接显示屏，多个箱体拼接组装的过程中，将第一调节件穿过第一调节孔抵接所述连接底座远离所述第一表面的侧面，当某一个箱体的第二表面和其他箱体的第二表面存在高度差时，调节该箱体处的第一调节件，将箱体顶起或放下，从而调节该箱体的第二表面的高度，进而使得该箱体的第二表面与其他箱体的第二表面处于同一平面，进而使得位于箱体的第二表面上的显示单元处于同一平面，由此能够在较小的面积下使得屏幕分辨率得以提高，保证画面的质感，满足用户近距离观看的需求。\n\n[0016]多个箱体拼接组装的过程中，通过第二调节件以及第三调节件，调节相邻的箱体之间的间隙，由此既可以实现显示单元之间的无缝拼接，满足跨屏显示的需求，又可以防止相邻的显示单元之间发生重叠，避免影响显示效果。\n\n附图说明\n\n[0017]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0018]图1是本发明的拼接箱的结构示意图；\n\n[0019]图2是本发明的箱体的结构示意图；\n\n[0020]图3是图1中的虚线框A的局部放大图；\n\n[0021]图4是图3中的虚线框B的局部放大图；\n\n[0022]图5是图3中的虚线框C的局部放大图；\n\n[0023]图6是图3中的虚线框D的局部放大图；\n\n[0024]图7是本实施例的第一垫片的结构示意图；\n\n[0025]图8是本实施例的第二垫片的结构示意图。\n\n[0026]附图标记说明：\n\n[0027]100、拼接箱；\n\n[0028]1、箱体； 2、基座；\n\n[0029]3、连接底座； 4、拼接垫片；\n\n[0030]5、第一紧固件； 6、第一调节件；\n\n[0031]7、第一侧板； 8、第二侧板；\n\n[0032]9、第三侧板； 10、第四侧板；\n\n[0033]11、第二紧固件； 12、第三紧固件；\n\n[0034]13、第二调节件； 14、第三调节件；\n\n[0035]15、第一卡接公端； 16、第一卡接母端；\n\n[0036]21、第一表面； 31、第一紧固孔；\n\n[0037]41、第一拼接垫片 42、第二拼接垫片；\n\n[0038]43、第二紧固孔； 44、第一调节孔；\n\n[0039]71、第三紧固孔； 81、第四紧固孔；\n\n[0040]91、第五紧固孔； 101、第六紧固孔；\n\n[0041]72、第二调节孔； 92、第三调节孔。\n\n具体实施方式\n\n[0042]以下结合说明书附图详细说明本发明的优选实施例，以向本领域中的技术人员完整介绍本发明的技术内容，以举例证明本发明可以实施，使得本发明公开的技术内容更加清楚，使得本领域的技术人员更容易理解如何实施本发明。然而本发明可以通过许多不同形式的实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例，下文实施例的说明并非用来限制本发明的范围。\n\n[0043]本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是附图中的方向，本文所使用的方向用语是用来解释和说明本发明，而不是用来限定本发明的保护范围。\n\n[0044]在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。此外，为了便于理解和描述，附图所示的每一组件的尺寸和厚度是任意示出的，本发明并没有限定每个组件的尺寸和厚度。\n\n[0045]实施例1\n\n[0046]如图1所示，本实施例提供一种拼接箱100。所述拼接箱100包括多个相互拼接固定的箱体1。本实施例中，所述箱体1呈5行4列排布，其他实施例中可以根据实际需求调整箱体1的行数和列数。\n\n[0047]如图2所示，每一所述箱体1均包括：基座2以及连接底座3。\n\n[0048]如图2所示，所述基座2具有相对设置的第一表面21及第二表面(图未示)。\n\n[0049]如图2所示，所述连接底座3凸出于所述基座2的第一表面21上，且位于所述基座2的四个角落处。每一所述连接底座3均设有至少一个第一紧固孔31。本实施例中，每一所述连接底座3均设有两个第一紧固孔31。本实施例中，所述第一紧固孔31为螺丝孔。\n\n[0050]如图3-图8所示，拼接箱100还包括拼接垫片4。拼接垫片4覆盖于至少两个相邻的所述连接底座3上。\n\n[0051]本实施例中，所述拼接垫片4分为第一拼接垫片41和第二拼接垫片42。所述第一拼接垫片41位于所述拼接箱100的边缘，且覆盖于两个相邻的所述连接底座3上。所述第二拼接垫片42位于所述拼接箱100的中部，且覆盖于四个所述连接底座3上。\n\n[0052]如图3-图8所示，每一所述拼接垫片4上均贯穿设有多个第二紧固孔43。每一所述拼接垫片4上的所述第二紧固孔43与该所述拼接垫片4覆盖的所述连接底座3上的所述第一紧固孔31一一对应。本实施例中，由于每一所述连接底座3均设有两个第一紧固孔31，第一拼接垫片41仅覆盖两个连接底座3，因此，每一所述第一拼接垫片41在对应于其覆盖的两个连接底座3上的第一紧固孔31的位置处共设有4个第二紧固孔43。由于每一所述连接底座3均设有两个第一紧固孔31，第二拼接垫片42覆盖四个连接底座3，因此，每一所述第二拼接垫片42在对应于其覆盖的四个连接底座3上的第一紧固孔31的位置处共设有8个第二紧固孔43。本实施例中，所述第二紧固孔43为螺丝孔。\n\n[0053]如图3-图8所示，每一所述拼接垫片4在对应于其覆盖的每一所述连接底座3的位置处均贯穿设有至少一个第一调节孔44。本实施例中，每一所述拼接垫片4在对应于其覆盖的每一所述连接底座3的位置处均贯穿设有两个第一调节孔44。具体的，本实施例中，所述第一拼接垫片41上贯穿设有4个第一调节孔，所述第二拼接垫片42上贯穿设有8个第一调节孔44。本实施例中，所述第一调节孔44为螺丝孔。\n\n[0054]其中，所述拼接箱100还包括多个第一紧固件5。每一所述第一紧固件5均穿过一个所述第二紧固孔43以及一个所述第一紧固孔31，由此实现多个箱体1的拼接固定。本实施例中，所述第一紧固件5为螺丝。\n\n[0055]其中，所述拼接箱100还包括多个第一调节件6。每一所述第一调节件6均穿过一个所述第一调节孔44，抵接至一个所述连接底座3远离所述第一表面21的侧面。具体的，每一所述第一调节件6均穿过一个拼接垫片4的第一调节孔44，并抵接至该拼接垫片4对应的连接底座3的远离所述第一表面21的侧面。本实施例中，所述第一调节件6为螺栓。\n\n[0056]综上，在多个箱体1的组装过程中，当某一个箱体1的第二表面和其他箱体1的第二表面存在高度差时，调节该箱体1处的第一调节件6，将该箱体1顶起或放下，从而调节该箱体1的第二表面的高度，进而使得该箱体1的第二表面与其他箱体1的第二表面处于同一平面，进而可以使得位于箱体1的第二表面上的产品处于同一平面。具体的，当某一个箱体1的第二表面略低于其他箱体1的第二表面时，可以通过调节该箱体的第一调节件6，顶起该箱体1，使得该箱体1的第二表面与其他箱体1的第二表面处于同一平面。同理，当某一个箱体1的第二表面略高于其他箱体1的第二表面时，可以通过调节该箱体的第一调节件6，放下该箱体1，使得该箱体1的第二表面与其他箱体1的第二表面处于同一平面。\n\n[0057]如图3-图6所示，每一所述箱体1还包括凸出于所述第一表面上，且位于所述基座2的四边的第一侧板7、第二侧板8、第三侧板9以及第四侧板10。\n\n[0058]如图3-图6所示，所述第二侧板8与所述第一侧板7相对设置，且平行于所述第一侧板7。\n\n[0059]如图3-图6所示，所述第一侧板7上贯穿设有至少一个第三紧固孔71。所述第二侧板8上贯穿设有至少一个第四紧固孔81，所述第三紧固孔71与所述第四紧固孔81一一对应。本实施例中，所述第三紧固孔71、第四紧固孔81均为螺丝孔。\n\n[0060]如图3-图6所示，所述拼接箱100还包括多个第二紧固件11。每一所述第二紧固件11均穿过一个所述箱体1的第三紧固孔71及另一个所述箱体1的第四紧固孔81，由此加强相邻两个所述箱体1之间的固定效果。本实施例中，所述第二紧固件11为螺丝。\n\n[0061]如图3-图6所示，所述第四侧板10与所述第三侧板9相对设置，且平行于所述第三侧板9，垂直于所述第一侧板7。\n\n[0062]如图3-图6所示，所述第三侧板9上贯穿设有至少一个第五紧固孔91，所述第四侧板10上贯穿设有至少一个第六紧固孔101，所述第五紧固孔91与所述第六紧固孔101一一对应。本实施例中，所述第五紧固孔91、第六紧固孔101均为螺丝孔。\n\n[0063]如图3-图6所示，所述拼接箱还包括多个第三紧固件12。每一所述第三紧固件12均穿过一个所述箱体1的第五紧固孔91及另一个所述箱体1的第六紧固孔101，由此加强相邻两个所述箱体1之间的固定效果。本实施例中，所述第三紧固件12为螺丝。\n\n[0064]如图3-图6所示，所述第一侧板7上还贯穿设有至少一个第二调节孔72。所述拼接箱100还包括多个第二调节件13，每一所述第二调节件13均穿过一个所述箱体1的所述第二调节孔72，抵接至与该箱体1相邻的另一个箱体1的所述第二侧板8的外表面。本实施例中，所述第二调节孔72为螺丝孔。本实施例中，所述第二调节件13为螺栓。\n\n[0065]如图3-图6所示，所述第三侧板9上还贯穿设有至少一个第三调节孔92。所述拼接箱100还包括多个第三调节件14，每一所述第三调节件14均穿过一个所述箱体1的所述第三调节孔92，抵接至与该箱体1相邻的另一个箱体1的所述第四侧板10的外表面。本实施例中，所述第三调节孔92为螺丝孔。本实施例中，所述第三调节件14为螺栓。\n\n[0066]综上，在多个箱体1的组装过程中，通过第二调节件13以及第三调节件14，调节相邻的箱体1之间的间隙。\n\n[0067]如图3-图6所示，所述拼接箱100还包括至少一个第一卡接公端15及至少一个第一卡接母端16。第一卡接公端15位于所述第一侧板7的外表面上；第一卡接母端16位于所述第二侧板8的外表面上，且与所述第一卡接公端15一一对应。每一所述箱体1的第一卡接公端15均嵌合于与该箱体1相邻的箱体1的第一卡接母端16，由此可以实现相邻两个箱体1的对位组装。\n\n[0068]如图3-图6所示，所述拼接箱100还包括至少一个第二卡接公端(图未示)及至少一个第二卡接母端(图未示)。第二卡接公端位于所述第三侧板9的外表面上；第二卡接母端位于所述第四侧板10的外表面上，且与所述第二卡接公端一一对应。每一所述箱体1的第二卡接公端均嵌合于与该箱体1相邻的箱体1的第二卡接母端，由此可以实现相邻两个箱体1的对位组装。\n\n[0069]实施例2\n\n[0070]本实施例还提供一种拼接显示屏。所述拼接显示屏包括实施例1的拼接箱100以及多个显示单元。\n\n[0071]其中，所述显示单元阵列排布于所述箱体1的第二表面上。所述显示单元包括：mini LED显示单元、micro LED显示单元及OLED显示单元中的一种。本实施例中，所述显示单元为mini LED显示单元。\n\n[0072]在多个箱体1的组装过程中，当某一个箱体1的第二表面和其他箱体1的第二表面存在高度差时，调节该箱体1处的第一调节件6，将该箱体1顶起或放下，从而调节该箱体1的第二表面的高度，进而使得该箱体1的第二表面与其他箱体1的第二表面处于同一平面，进而可以使得位于箱体1的第二表面上的显示单元处于同一平面。由此能够在较小的面积下使得屏幕分辨率得以提高，保证画面的质感，满足用户近距离观看的需求。\n\n[0073]具体的，当某一个箱体1的第二表面略低于其他箱体1的第二表面时，可以通过调节该箱体的第一调节件6，顶起该箱体1，使得该箱体1的第二表面与其他箱体1的第二表面处于同一平面。同理，当某一个箱体1的第二表面略高于其他箱体1的第二表面时，可以通过调节该箱体的第一调节件6，放下该箱体1，使得该箱体1的第二表面与其他箱体1的第二表面处于同一平面。\n\n[0074]在多个箱体1的组装过程中，通过第二调节件13以及第三调节件14，调节相邻的箱体1之间的间隙。由此既可以实现显示单元之间的无缝拼接，满足跨屏显示的需求，又可以防止相邻的显示单元之间发生重叠，避免影响显示效果。\n\n[0075]以上对本申请所提供的一种拼接箱及拼接显示屏进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及拼接显示技术领域，具体涉及一种拼接箱及拼接显示屏。\n\n背景技术\n\n[0002]现阶段，由于我国的监控技术水平以及数据收集能力得到了一定程度的提升。显示终端能否准确的将收集到的数据及时呈现在显示墙上直接关系到上级部门决策的合理性，相当重要。为满足市场的需求，显示终端的技术人员需要改进现有技术，使之朝着无缝化、高清化方向发展，随即，LED(英文全称：Light-Emitting Diode，发光二极管)的拼接显示屏就应运而生了。\n\n[0003]然而，目前的加工工艺无法保证拼接显示屏的拼接箱的平面度为零，且多个箱体拼接组装的过程中，箱体之间会存在高低差或者缝隙，影响拼接显示屏的显示效果。因此需要寻求一种新型的拼接显示屏以解决上述问题。\n\n发明内容\n\n[0004]本发明的目的是提供一种拼接箱及拼接显示屏，其能够解决现有拼接显示屏存在的箱体之间存在高低差或者缝隙，影响拼接显示屏的显示效果等问题。\n\n[0005]为了解决上述问题，本发明提供了一种拼接箱，其包括：多个箱体，每一所述箱体均包括：基座以及位于所述基座的四个角落处的连接底座；所述基座具有相对设置的第一表面及第二表面；所述连接底座凸出于所述基座的第一表面上；每一所述连接底座均设有至少一个第一紧固孔；拼接垫片，覆盖于至少两个相邻的所述连接底座上；所述拼接垫片上贯穿设有多个第二紧固孔，所述拼接垫片上的所述第二紧固孔与该所述拼接垫片覆盖的所述连接底座上的所述第一紧固孔一一对应；所述拼接垫片在对应于其覆盖的每一所述连接底座的位置处均贯穿设有至少一个第一调节孔；多个第一紧固件，每一所述第一紧固件均穿过一个所述第二紧固孔以及一个所述第一紧固孔；以及多个第一调节件，每一所述第一调节件均穿过一个所述第一调节孔，抵接至一个所述连接底座远离所述第一表面的侧面。\n\n[0006]进一步的，每一所述箱体还包括：第一侧板，凸出于所述基座的第一表面上；第二侧板，凸出于所述基座的第一表面上，且与所述第一侧板相对设置；其中，所述第一侧板上贯穿设有至少一个第三紧固孔，所述第二侧板上贯穿设有至少一个第四紧固孔，所述第三紧固孔与所述第四紧固孔一一对应；所述拼接箱还包括多个第二紧固件，每一所述第二紧固件均穿过一个所述箱体的第三紧固孔及另一个所述箱体的第四紧固孔。\n\n[0007]进一步的，每一所述箱体还包括：第三侧板，凸出于所述基座的第一表面上，且垂直于所述第一侧板；第四侧板，凸出于所述基座的第一表面上，且与所述第三侧板相对设置；其中，所述第三侧板上贯穿设有至少一个第五紧固孔，所述第四侧板上贯穿设有至少一个第六紧固孔，所述第五紧固孔与所述第六紧固孔一一对应；所述拼接箱还包括多个第三紧固件，每一所述第三紧固件均穿过一个所述箱体的第五紧固孔及另一个所述箱体的第六紧固孔。\n\n[0008]进一步的，所述第一侧板上还贯穿设有至少一个第二调节孔；所述拼接箱还包括多个第二调节件，每一所述第二调节件均穿过一个所述箱体的所述第二调节孔，抵接至与该箱体相邻的另一个箱体的所述第二侧板的外表面。\n\n[0009]进一步的，所述第三侧板上还贯穿设有至少一个第三调节孔；所述拼接箱还包括多个第三调节件，每一所述第三调节件均穿过一个所述箱体的所述第三调节孔，抵接至与该箱体相邻的另一个箱体的所述第四侧板的外表面。\n\n[0010]进一步的，所述拼接箱还包括：至少一个第一卡接公端，位于所述第一侧板的外表面上；至少一个第一卡接母端，位于所述第二侧板的外表面上，且与所述第一卡接公端一一对应；每一所述箱体的第一卡接公端均嵌合于与该箱体相邻的箱体的第一卡接母端。\n\n[0011]进一步的，所述拼接箱还包括：至少一个第二卡接公端，位于所述第三侧板的外表面上；至少一个第二卡接母端，位于所述第四侧板的外表面上，且与所述第二卡接公端一一对应；每一所述箱体的第二卡接公端均嵌合于与该箱体相邻的箱体的第二卡接母端。\n\n[0012]为了解决上述问题，本发明还提供了一种拼接显示屏，其包括本发明涉及的拼接箱。\n\n[0013]进一步的，所述拼接显示屏还包括：多个显示单元，阵列排布于所述箱体的第二表面上。\n\n[0014]进一步的，所述显示单元包括：mini LED显示单元、micro LED显示单元及OLED显示单元中的一种。\n\n[0015]本发明的优点是：本发明涉及一种拼接箱及拼接显示屏，多个箱体拼接组装的过程中，将第一调节件穿过第一调节孔抵接所述连接底座远离所述第一表面的侧面，当某一个箱体的第二表面和其他箱体的第二表面存在高度差时，调节该箱体处的第一调节件，将箱体顶起或放下，从而调节该箱体的第二表面的高度，进而使得该箱体的第二表面与其他箱体的第二表面处于同一平面，进而使得位于箱体的第二表面上的显示单元处于同一平面，由此能够在较小的面积下使得屏幕分辨率得以提高，保证画面的质感，满足用户近距离观看的需求。\n\n[0016]多个箱体拼接组装的过程中，通过第二调节件以及第三调节件，调节相邻的箱体之间的间隙，由此既可以实现显示单元之间的无缝拼接，满足跨屏显示的需求，又可以防止相邻的显示单元之间发生重叠，避免影响显示效果。\n\n附图说明\n\n[0017]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0018]图1是本发明的拼接箱的结构示意图；\n\n[0019]图2是本发明的箱体的结构示意图；\n\n[0020]图3是图1中的虚线框A的局部放大图；\n\n[0021]图4是图3中的虚线框B的局部放大图；\n\n[0022]图5是图3中的虚线框C的局部放大图；\n\n[0023]图6是图3中的虚线框D的局部放大图；\n\n[0024]图7是本实施例的第一垫片的结构示意图；\n\n[0025]图8是本实施例的第二垫片的结构示意图。\n\n[0026]附图标记说明：\n\n[0027]100、拼接箱；\n\n[0028]1、箱体； 2、基座；\n\n[0029]3、连接底座； 4、拼接垫片；\n\n[0030]5、第一紧固件； 6、第一调节件；\n\n[0031]7、第一侧板； 8、第二侧板；\n\n[0032]9、第三侧板； 10、第四侧板；\n\n[0033]11、第二紧固件； 12、第三紧固件；\n\n[0034]13、第二调节件； 14、第三调节件；\n\n[0035]15、第一卡接公端； 16、第一卡接母端；\n\n[0036]21、第一表面； 31、第一紧固孔；\n\n[0037]41、第一拼接垫片 42、第二拼接垫片；\n\n[0038]43、第二紧固孔； 44、第一调节孔；\n\n[0039]71、第三紧固孔； 81、第四紧固孔；\n\n[0040]91、第五紧固孔； 101、第六紧固孔；\n\n[0041]72、第二调节孔； 92、第三调节孔。\n\n具体实施方式\n\n[0042]以下结合说明书附图详细说明本发明的优选实施例，以向本领域中的技术人员完整介绍本发明的技术内容，以举例证明本发明可以实施，使得本发明公开的技术内容更加清楚，使得本领域的技术人员更容易理解如何实施本发明。然而本发明可以通过许多不同形式的实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例，下文实施例的说明并非用来限制本发明的范围。\n\n[0043]本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是附图中的方向，本文所使用的方向用语是用来解释和说明本发明，而不是用来限定本发明的保护范围。\n\n[0044]在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。此外，为了便于理解和描述，附图所示的每一组件的尺寸和厚度是任意示出的，本发明并没有限定每个组件的尺寸和厚度。\n\n[0045]实施例1\n\n[0046]如图1所示，本实施例提供一种拼接箱100。所述拼接箱100包括多个相互拼接固定的箱体1。本实施例中，所述箱体1呈5行4列排布，其他实施例中可以根据实际需求调整箱体1的行数和列数。\n\n[0047]如图2所示，每一所述箱体1均包括：基座2以及连接底座3。\n\n[0048]如图2所示，所述基座2具有相对设置的第一表面21及第二表面(图未示)。\n\n[0049]如图2所示，所述连接底座3凸出于所述基座2的第一表面21上，且位于所述基座2的四个角落处。每一所述连接底座3均设有至少一个第一紧固孔31。本实施例中，每一所述连接底座3均设有两个第一紧固孔31。本实施例中，所述第一紧固孔31为螺丝孔。\n\n[0050]如图3-图8所示，拼接箱100还包括拼接垫片4。拼接垫片4覆盖于至少两个相邻的所述连接底座3上。\n\n[0051]本实施例中，所述拼接垫片4分为第一拼接垫片41和第二拼接垫片42。所述第一拼接垫片41位于所述拼接箱100的边缘，且覆盖于两个相邻的所述连接底座3上。所述第二拼接垫片42位于所述拼接箱100的中部，且覆盖于四个所述连接底座3上。\n\n[0052]如图3-图8所示，每一所述拼接垫片4上均贯穿设有多个第二紧固孔43。每一所述拼接垫片4上的所述第二紧固孔43与该所述拼接垫片4覆盖的所述连接底座3上的所述第一紧固孔31一一对应。本实施例中，由于每一所述连接底座3均设有两个第一紧固孔31，第一拼接垫片41仅覆盖两个连接底座3，因此，每一所述第一拼接垫片41在对应于其覆盖的两个连接底座3上的第一紧固孔31的位置处共设有4个第二紧固孔43。由于每一所述连接底座3均设有两个第一紧固孔31，第二拼接垫片42覆盖四个连接底座3，因此，每一所述第二拼接垫片42在对应于其覆盖的四个连接底座3上的第一紧固孔31的位置处共设有8个第二紧固孔43。本实施例中，所述第二紧固孔43为螺丝孔。\n\n[0053]如图3-图8所示，每一所述拼接垫片4在对应于其覆盖的每一所述连接底座3的位置处均贯穿设有至少一个第一调节孔44。本实施例中，每一所述拼接垫片4在对应于其覆盖的每一所述连接底座3的位置处均贯穿设有两个第一调节孔44。具体的，本实施例中，所述第一拼接垫片41上贯穿设有4个第一调节孔，所述第二拼接垫片42上贯穿设有8个第一调节孔44。本实施例中，所述第一调节孔44为螺丝孔。\n\n[0054]其中，所述拼接箱100还包括多个第一紧固件5。每一所述第一紧固件5均穿过一个所述第二紧固孔43以及一个所述第一紧固孔31，由此实现多个箱体1的拼接固定。本实施例中，所述第一紧固件5为螺丝。\n\n[0055]其中，所述拼接箱100还包括多个第一调节件6。每一所述第一调节件6均穿过一个所述第一调节孔44，抵接至一个所述连接底座3远离所述第一表面21的侧面。具体的，每一所述第一调节件6均穿过一个拼接垫片4的第一调节孔44，并抵接至该拼接垫片4对应的连接底座3的远离所述第一表面21的侧面。本实施例中，所述第一调节件6为螺栓。\n\n[0056]综上，在多个箱体1的组装过程中，当某一个箱体1的第二表面和其他箱体1的第二表面存在高度差时，调节该箱体1处的第一调节件6，将该箱体1顶起或放下，从而调节该箱体1的第二表面的高度，进而使得该箱体1的第二表面与其他箱体1的第二表面处于同一平面，进而可以使得位于箱体1的第二表面上的产品处于同一平面。具体的，当某一个箱体1的第二表面略低于其他箱体1的第二表面时，可以通过调节该箱体的第一调节件6，顶起该箱体1，使得该箱体1的第二表面与其他箱体1的第二表面处于同一平面。同理，当某一个箱体1的第二表面略高于其他箱体1的第二表面时，可以通过调节该箱体的第一调节件6，放下该箱体1，使得该箱体1的第二表面与其他箱体1的第二表面处于同一平面。\n\n[0057]如图3-图6所示，每一所述箱体1还包括凸出于所述第一表面上，且位于所述基座2的四边的第一侧板7、第二侧板8、第三侧板9以及第四侧板10。\n\n[0058]如图3-图6所示，所述第二侧板8与所述第一侧板7相对设置，且平行于所述第一侧板7。\n\n[0059]如图3-图6所示，所述第一侧板7上贯穿设有至少一个第三紧固孔71。所述第二侧板8上贯穿设有至少一个第四紧固孔81，所述第三紧固孔71与所述第四紧固孔81一一对应。本实施例中，所述第三紧固孔71、第四紧固孔81均为螺丝孔。\n\n[0060]如图3-图6所示，所述拼接箱100还包括多个第二紧固件11。每一所述第二紧固件11均穿过一个所述箱体1的第三紧固孔71及另一个所述箱体1的第四紧固孔81，由此加强相邻两个所述箱体1之间的固定效果。本实施例中，所述第二紧固件11为螺丝。\n\n[0061]如图3-图6所示，所述第四侧板10与所述第三侧板9相对设置，且平行于所述第三侧板9，垂直于所述第一侧板7。\n\n[0062]如图3-图6所示，所述第三侧板9上贯穿设有至少一个第五紧固孔91，所述第四侧板10上贯穿设有至少一个第六紧固孔101，所述第五紧固孔91与所述第六紧固孔101一一对应。本实施例中，所述第五紧固孔91、第六紧固孔101均为螺丝孔。\n\n[0063]如图3-图6所示，所述拼接箱还包括多个第三紧固件12。每一所述第三紧固件12均穿过一个所述箱体1的第五紧固孔91及另一个所述箱体1的第六紧固孔101，由此加强相邻两个所述箱体1之间的固定效果。本实施例中，所述第三紧固件12为螺丝。\n\n[0064]如图3-图6所示，所述第一侧板7上还贯穿设有至少一个第二调节孔72。所述拼接箱100还包括多个第二调节件13，每一所述第二调节件13均穿过一个所述箱体1的所述第二调节孔72，抵接至与该箱体1相邻的另一个箱体1的所述第二侧板8的外表面。本实施例中，所述第二调节孔72为螺丝孔。本实施例中，所述第二调节件13为螺栓。\n\n[0065]如图3-图6所示，所述第三侧板9上还贯穿设有至少一个第三调节孔92。所述拼接箱100还包括多个第三调节件14，每一所述第三调节件14均穿过一个所述箱体1的所述第三调节孔92，抵接至与该箱体1相邻的另一个箱体1的所述第四侧板10的外表面。本实施例中，所述第三调节孔92为螺丝孔。本实施例中，所述第三调节件14为螺栓。\n\n[0066]综上，在多个箱体1的组装过程中，通过第二调节件13以及第三调节件14，调节相邻的箱体1之间的间隙。\n\n[0067]如图3-图6所示，所述拼接箱100还包括至少一个第一卡接公端15及至少一个第一卡接母端16。第一卡接公端15位于所述第一侧板7的外表面上；第一卡接母端16位于所述第二侧板8的外表面上，且与所述第一卡接公端15一一对应。每一所述箱体1的第一卡接公端15均嵌合于与该箱体1相邻的箱体1的第一卡接母端16，由此可以实现相邻两个箱体1的对位组装。\n\n[0068]如图3-图6所示，所述拼接箱100还包括至少一个第二卡接公端(图未示)及至少一个第二卡接母端(图未示)。第二卡接公端位于所述第三侧板9的外表面上；第二卡接母端位于所述第四侧板10的外表面上，且与所述第二卡接公端一一对应。每一所述箱体1的第二卡接公端均嵌合于与该箱体1相邻的箱体1的第二卡接母端，由此可以实现相邻两个箱体1的对位组装。\n\n[0069]实施例2\n\n[0070]本实施例还提供一种拼接显示屏。所述拼接显示屏包括实施例1的拼接箱100以及多个显示单元。\n\n[0071]其中，所述显示单元阵列排布于所述箱体1的第二表面上。所述显示单元包括：mini LED显示单元、micro LED显示单元及OLED显示单元中的一种。本实施例中，所述显示单元为mini LED显示单元。\n\n[0072]在多个箱体1的组装过程中，当某一个箱体1的第二表面和其他箱体1的第二表面存在高度差时，调节该箱体1处的第一调节件6，将该箱体1顶起或放下，从而调节该箱体1的第二表面的高度，进而使得该箱体1的第二表面与其他箱体1的第二表面处于同一平面，进而可以使得位于箱体1的第二表面上的显示单元处于同一平面。由此能够在较小的面积下使得屏幕分辨率得以提高，保证画面的质感，满足用户近距离观看的需求。\n\n[0073]具体的，当某一个箱体1的第二表面略低于其他箱体1的第二表面时，可以通过调节该箱体的第一调节件6，顶起该箱体1，使得该箱体1的第二表面与其他箱体1的第二表面处于同一平面。同理，当某一个箱体1的第二表面略高于其他箱体1的第二表面时，可以通过调节该箱体的第一调节件6，放下该箱体1，使得该箱体1的第二表面与其他箱体1的第二表面处于同一平面。\n\n[0074]在多个箱体1的组装过程中，通过第二调节件13以及第三调节件14，调节相邻的箱体1之间的间隙。由此既可以实现显示单元之间的无缝拼接，满足跨屏显示的需求，又可以防止相邻的显示单元之间发生重叠，避免影响显示效果。\n\n[0075]以上对本申请所提供的一种拼接箱及拼接显示屏进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10969, 24023, '技术领域\n\n[0001]本发明涉及一种发光显示装置的技术领域，尤指一种发光显示装置以及发光显示装置的制作方法。\n\n背景技术\n\n[0002]随着LED微缩化技术的发展，微米(μm)或纳米(nm)尺寸级别的LED受到了光电显示领域的极大关注。特别地，miniLED(迷你发光二极管)显示技术发展非常迅速，既可以作为LCD(Liquid Crystal Display，液晶显示器)的蓝色背光源，也可以使用三种颜色的miniLED直接进行显示。由于miniLED直显技术涉及到红、绿、蓝三种颜色芯片的微缩化与固晶等工艺，相应的像素设计和制程难度也较大。量子点(quantum dot,QD)作为一种优异的色转换材料，若以蓝光miniLED作为背光，利用高能量的蓝光激发红或绿量子点产生相应的红光或绿光，则可以实现色转换。这种QD-miniLED显示技术相对miniLED直显而言，只需要蓝色miniLED芯片，再结合量子点色转换层，就可以实现全彩化，故对于芯片的制作、面板设计及其后续制程相对简单。\n\n[0003]根据量子点在器件中的位置不同，QD-miniLED器件结构有多种，比较具有代表性的是量子点彩膜(QDCF)结构以及量子点芯片(QD on chip)。QDCF结构中的量子点和miniLED是分开在做两块玻璃基板上，它们之间有一定间隙。然而，量子点芯片1的结构相对QDCF结构而言，量子点和miniLED芯片12两者集成在同一块玻璃基板上，结构相对简单，如图1所示。由于量子点层11直接与miniLED芯片12接触并设置在基板13上，由于P电极121和N电极122在芯片12的同一侧(水平结构)，电流会发生横向流动，容易产生电流密度不均导致miniLED芯片12局部高温。因此量子点芯片1受到miniLED芯片12发热的影响会较大。再者，如图1的miniLED芯片12是先固晶再沉积量子点层11，由于量子点层11利用喷涂或点胶或丝网印刷工艺沉积的精度较差，很难精确的沉积在miniLED芯片12上，即miniLED芯片12外的区域会分布多余的量子点层11，故会浪费材料，同时影响光的取出。\n\n发明内容\n\n[0004]本发明的目的，在于提供一种发光显示装置以及制作发光显示装置的方法，通过垂直结构的量子点发光芯片(QD-miniLED)，增加微发光二极管芯片的散热效果，并有望应用于大功率的发光显示装置中。\n\n[0005]为达到本发明前述目的，本发明提供一种发光显示装置，包括量子点发光芯片以及驱动基板。所述量子点发光芯片包括一体成型制成的微发光二极管芯片及对应所述微发光二极管芯片上的量子点层，所述微发光二极管芯片包括依次层叠设置的第一电极、外延片以及第二电极，所述第一电极与所述第二电极设置在所述外延片的两相对应的表面上。所述量子点发光芯片的所述第二电极电性连接在所述驱动基板上的至少一电极区上。\n\n[0006]优选地，所述量子点层的四周边缘与所述微发光二极管芯片的四周边缘齐平设置。\n\n[0007]优选地，所述驱动基板还包括衬底基板及设置在所述衬底基板上的呈阵列分布的多个驱动电路单元，每一所述驱动电路单元包括二个所述电极区，使每一所述驱动电路单元对应地固接在每一所述微发光二极管芯片的所述第一电极上。\n\n[0008]优选地，还包括涂布在所述量子点层上的透明封装体，所述量子点层包括多个量子点粒子以及量子点填料。\n\n[0009]本发明还提供一种发光显示装置的制作方法，包括以下步骤:\n\n[0010]提供衬底，在所述衬底上制作外延片，在所述外延片一侧表面上形成图案化的第一电极；\n\n[0011]键合导电衬底，将具有所述第一电极的所述外延片转移键合到所述导电衬底，以形成阵列分布的多个微发光二极管芯片；\n\n[0012]激光剥离所述外延片的所述衬底，使所述衬底界面处与所述外延片气化分解而剥离；以及\n\n[0013]涂布量子点层在所述微发光二极管芯片上，并切割成单颗量子点发光芯片。\n\n[0014]优选地，所述外延片通过金属有机化合物气相沉积或分子束外延工艺在所述衬底制成，所述第一电极以光刻、刻蚀工艺在所述外延片上形成。\n\n[0015]优选地，在键合导电衬底的步骤中，通过300-500摄氏度高温热压工艺实现，其中在形成所述多个微发光二极管芯片前，还包括在所述导电衬底通过光刻、刻蚀工艺形成第二电极，使所述第一电极与所述第二电极形成在每一所述外延片的两相对应的表面上。\n\n[0016]优选地，还包括将所述单颗量子点发光芯片通过打件或异性导电胶工艺转移到驱动基板上。\n\n[0017]优选地，还包括电性连接所述驱动基板上的至少一电极区，通过加热或加压等工艺将所述单颗量子点发光芯片的所述第一电极与所述驱动基板上的所述电极区结合，使所述量子点发光芯片连接在所述驱动基板上。\n\n[0018]优选地，还包括将透明封装胶体通过喷涂等工艺覆盖在各所述量子点发光芯片上。\n\n[0019]本发明还具有以下功效，本发明垂直结构的量子点发光芯片(QD-miniLED)，第一电极(P电极)和第二电极(N电极)分别位于外延片上下两侧表面，使得电流几乎全部垂直流过外延片的，横向电流极少，因此电流分布均匀，可以避免局部高温，产生的热量也较少。同时，本实施例垂直结构的微发光二极管芯片采用高导热率的导电衬底(Cu)，其散热面积大且导热率高，也有利于发光显示装置的散热。再者，本实施例量子点发光芯片的制作方法采用先涂布量子点层在微发光二极管芯片(LED)后才固接在驱动基板(固晶工艺)上，这种方法直接将量子点层均匀分布在微发光二极管芯片大晶圆上，再切割成单颗小LED，最后再固晶，如此可以精准地将量子点层沉积在LED区域，有效节省昂贵的量子点材料，降低发光显示装置成本。\n\n附图说明\n\n[0020]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0021]图1是现有平面结构的量子点芯片的示意图；\n\n[0022]图2是本发明垂直结构的发光显示装置的示意图；\n\n[0023]图3是本发明晶片键合及激光剥离的流程示意图；\n\n[0024]图4是本发明发光显示装置的制作方法的方块图；及\n\n[0025]图5A至图5C是本发明每一量子点发光芯片转移到驱动基板上的结构示意图。\n\n具体实施方式\n\n[0026]在具体实施方式中提及“实施例”意指结合实施例描述的特定特征、结构或特性可以包含在本发明的至少一个实施例中。在说明书中的不同位置出现的相同用语并非必然被限制为相同的实施方式，而应当理解为与其它实施例互为独立的或备选的实施方式。在本发明提供的实施例所公开的技术方案启示下，本领域的普通技术人员应理解本发明所描述的实施例可具有其他符合本发明构思的技术方案结合或变化。\n\n[0027]请参照图2所示，其为本发明垂直结构的发光显示装置的示意图。如图所示，本发明提供一种发光显示装置100，包括量子点发光芯片150以及驱动基板170。所述量子点发光芯片150包括一体成型制成的微发光二极管芯片110及对应所述微发光二极管芯片110上的量子点层130。在此所述的一体成型的量子点发光芯片150是指先涂布量子点130于微发光二极管芯片110上后才进行固晶工艺，详细制作方法容下所述。\n\n[0028]所述微发光二极管芯片110包括依次层叠设置的第一电极112、外延片114以及第二电极116。所述第一电极112(P电极)与所述第二电极116(N电极)设置在所述外延片114的两相对应的表面上，具体的，P电极112和N电极116分别位于外延片114的上下两侧表面，使得电流几乎全部垂直流过外延片114，横向流动的电流极少，因此电流分布均匀，可以避免局部高温，产生的热量也较少。同时，本实施例垂直结构的微发光二极管芯片110采用高导热率的导电衬底(Cu)，其散热面积大且导热率高，也有利于发光显示装置100的散热，因此能够增加微发光二极管芯片110的散热效果，并有望应用于大功率的发光显示装置100中。\n\n[0029]所述量子点发光芯片150的所述第二电极116电性连接在所述驱动基板170(TFT玻璃背板)上的至少一电极区182/184上(图5A)。请一并参考图5A所示，所述驱动基板170还包括衬底基板172及设置在所述衬底基板172上的呈阵列分布的多个驱动电路单元180，具体的，在本实施例中，驱动基板170可以由刻蚀工艺形成，具有金属线路(图略)和驱动电路单元180(例如场效应晶体管、电容等)，用于驱动量子点发光芯片150发光。驱动基板170可以包括单层线路或多层线路，但並不限定。如图2所示的每一所述驱动电路单元180包括二个所述电极区182、184，使每一所述驱动电路单元180对应地固接在每一所述微发光二极管芯片110的所述第一电极112上。每一微发光二极管芯片110由对应的所述驱动电路单元180控制，以使所述外延片114(例如氮化鎵(GaN))产生的光线在所述量子点层130散射出光。\n\n[0030]须说明的是，由于量子点层130可以均匀分布在微发光二极管芯片110大晶圆上，再切割成单颗小LED，最后再固晶。因此，所述量子点层130的四周边缘与所述微发光二极管芯片110的四周边缘齐平设置，从而精准地将量子点层130沉积在微发光二极管芯片110区域，有效节省昂贵的量子点层130材料，降低发光显示装置100成本。\n\n[0031]所述量子点层130包括多个量子点粒子132以及量子点填料134。量子点粒子132的直径约为5～6纳米，激发后会发出波长较长的光，例如橘光或红光；量子点粒子132的直径约为2～3纳米，激发后会发出波长较短的光，例如蓝光或绿光。因此，便可利用不同尺寸的量子点粒子132，取得不同颜色的光。量子点粒子132发光效率高，量子点粒子132效率高达90％。量子点粒子132可以具有不同粒径或不同材质的复合材料。量子点粒子132的材料例如为硫化铜铟(CIS)、银铟硫(AgInS)、锌铜铟硫(ZCIS)、铜铟镓硫(CIGS)、二氧化钛(TiO2)、二氧化硅(SiO2)、三氧化二铝(Al2O3)、氮化硼(BN)、氧化锌(ZnO)等。量子点填料134包括例如聚合物材料或是烟雾状二氧化硅之填料。聚合物材料包括聚甲基丙烯酸甲酯(PMMA)、聚对苯二甲酸乙二醇酯(PET)、聚间苯二甲酸乙二酯(PEN)、聚苯乙烯(PS)、聚偏氟乙烯(PVDF)、聚乙酸乙烯酯(PVAC)、聚丙烯(PP)、聚酰胺(PA)、聚羧酸酯(PC)、聚酰亚胺(PI)、环氧树脂(epoxy)或硅胶(sil icone)或上述的组合。\n\n[0032]在一实施例中，还包括涂布在所述量子点层130上的透明封装体(图略)，以阻隔空气中的水氧或杂质等，以提高发光显示装置100的信赖性。具体的，透明封装体的材料可以是环氧树脂、聚酰亚胺等透明的封装材料，并不限定。\n\n[0033]请一并参考图3及图4所示，本发明还提供一种发光显示装置100的制作方法，包括以下步骤:\n\n[0034]步骤S10,提供衬底P1，在所述衬底P1上制作外延片P2(100)，在所述外延片P2一侧表面上形成图案化的第一电极112(P电极)。在步骤S10中,虽然对衬底P1的材料等没有特别的限制，但是至少需要具有能够承受后续的加热处理的耐热性，例如可以使用玻璃衬底、陶瓷衬底、石英衬底、蓝宝石衬底等。在本实施例中，所述衬底P1优选为蓝宝石衬底(sapphiresubstrate)。所述外延片P2通过金属有机化合物气相沉积(MOCVD)或分子束外延(Molecular beam epitaxy,MBE)等工艺在所述衬底P1上制成，所述第一电极112以光刻(photoresist)、刻蚀等工艺在所述外延片P2上形成。\n\n[0035]步骤S20,键合导电衬底P2，将具有所述第一电极112的所述外延片P2转移键合到所述导电衬底P3，以形成阵列分布的多个微发光二极管芯片110。在步骤S20中,所述导电衬底P3优选为Cu衬底(Cu substrate)，在键合导电衬底P3的步骤中，通过300-500摄氏度高温热压工艺实现芯片键合(wafer bonding)制作。本步骤中，在形成所述多个微发光二极管芯片110前，还包括在所述导电衬底P3通过光刻(photoresist)、刻蚀等工艺形成第二电极116(N电极)，使所述第一电极112与所述第二电极116形成在所述外延片P2的两相对应的表面上。\n\n[0036]步骤S30,激光P4剥离所述外延片P2的所述衬底P1，使所述衬底P1界面处与所述外延片P2气化分解而剥离。在步骤S30中,激光剥离(laser lift-off)，通过激光P4透过蓝宝石衬底P1辐射界面处的GaN材料，使其气化分解实现所述衬底P1剥离。在本实施例中，通过芯片键合技术与激光剥离技术相结合，将GaN基的外延片P2从蓝宝石衬底P1转移到其他高导电率、高热岛率的衬底，即导电衬底P3(Cu)。由于导电衬底P3的散热面积大且导热率高，也有利于微发光二极管芯片110的散热，因此能够增加微发光二极管芯片110的散热效果，并有望应用于大功率的发光显示装置100中。\n\n[0037]步骤S40,涂布量子点层130在所述微发光二极管芯片110上，并切割成单颗量子点发光芯片150(miniLED chip)。在步骤S40中,单颗量子点发光芯片150的制作，采用先涂布量子点层130在微发光二极管芯片110(LED)后才固接在驱动基板170(固晶工艺)上，这种方法直接将量子点层130均匀分布在微发光二极管芯片110大晶圆上，再切割成单颗小LED，最后再固晶，如此可以精准地将量子点层130沉积在微发光二极管芯片110区域，有效节省昂贵的量子点层130材料，降低发光显示装置100成本。\n\n[0038]请一并参考图5A至图5C所示，其为每一量子点发光芯片150转移到驱动基板170上的结构示意图。如图所示，当完成单颗量子点发光芯片150后，还包括将所述单颗量子点发光芯片150通过打件(SMT/SMD)或异性导电胶(ACF)工艺转移到驱动基板170(TFT玻璃背板)上，如此可在每一量子点发光芯片150上实现红、绿、蓝单独光色发光，或两种光色同时发光，或三种光色同时发光的效果。在图5C中，也可以不设置量子点层130，使量子点发光芯片150单独发白光，视需要而改变。所述驱动基板170还包括衬底基板172及设置在所述衬底基板172上的呈阵列分布的多个驱动电路单元180，具体的，每一量子点发光芯片150还包括电性连接所述驱动基板170上的至少一电极区182/184，通过加热或加压等工艺将所述单颗量子点发光芯片150的所述第一电极112与所述驱动基板170上的所述电极区182/184结合，使所述量子点发光芯片150牢固地连接在所述驱动基板170上以完成固晶作業。\n\n[0039]在本实施例中，还包括将透明封装胶体(图略)通过喷涂等工艺覆盖在各所述量子点发光芯片150上，以阻隔空气中的水氧或杂质等，以提高发光显示装置100的信赖性。具体的，透明封装体的材料可以是环氧树脂、聚酰亚胺等透明的封装材料，并不限定。最后，把外接硬件(IC芯片等)采用例如COF绑定(Bonding)在驱动基板170的相应位置，最后才得到发光显示装置100。\n\n[0040]综上所述，虽然本发明结合其具体实施例而被描述，应该理解的是，许多替代、修改及变化对于那些本领域的技术人员将是显而易见的。因此，其意在包含落入所附权利要求书的范围内的所有替代、修改及变化。', '技术领域\n\n[0001]本发明涉及一种发光显示装置的技术领域，尤指一种发光显示装置以及发光显示装置的制作方法。\n\n背景技术\n\n[0002]随着LED微缩化技术的发展，微米(μm)或纳米(nm)尺寸级别的LED受到了光电显示领域的极大关注。特别地，miniLED(迷你发光二极管)显示技术发展非常迅速，既可以作为LCD(Liquid Crystal Display，液晶显示器)的蓝色背光源，也可以使用三种颜色的miniLED直接进行显示。由于miniLED直显技术涉及到红、绿、蓝三种颜色芯片的微缩化与固晶等工艺，相应的像素设计和制程难度也较大。量子点(quantum dot,QD)作为一种优异的色转换材料，若以蓝光miniLED作为背光，利用高能量的蓝光激发红或绿量子点产生相应的红光或绿光，则可以实现色转换。这种QD-miniLED显示技术相对miniLED直显而言，只需要蓝色miniLED芯片，再结合量子点色转换层，就可以实现全彩化，故对于芯片的制作、面板设计及其后续制程相对简单。\n\n[0003]根据量子点在器件中的位置不同，QD-miniLED器件结构有多种，比较具有代表性的是量子点彩膜(QDCF)结构以及量子点芯片(QD on chip)。QDCF结构中的量子点和miniLED是分开在做两块玻璃基板上，它们之间有一定间隙。然而，量子点芯片1的结构相对QDCF结构而言，量子点和miniLED芯片12两者集成在同一块玻璃基板上，结构相对简单，如图1所示。由于量子点层11直接与miniLED芯片12接触并设置在基板13上，由于P电极121和N电极122在芯片12的同一侧(水平结构)，电流会发生横向流动，容易产生电流密度不均导致miniLED芯片12局部高温。因此量子点芯片1受到miniLED芯片12发热的影响会较大。再者，如图1的miniLED芯片12是先固晶再沉积量子点层11，由于量子点层11利用喷涂或点胶或丝网印刷工艺沉积的精度较差，很难精确的沉积在miniLED芯片12上，即miniLED芯片12外的区域会分布多余的量子点层11，故会浪费材料，同时影响光的取出。\n\n发明内容\n\n[0004]本发明的目的，在于提供一种发光显示装置以及制作发光显示装置的方法，通过垂直结构的量子点发光芯片(QD-miniLED)，增加微发光二极管芯片的散热效果，并有望应用于大功率的发光显示装置中。\n\n[0005]为达到本发明前述目的，本发明提供一种发光显示装置，包括量子点发光芯片以及驱动基板。所述量子点发光芯片包括一体成型制成的微发光二极管芯片及对应所述微发光二极管芯片上的量子点层，所述微发光二极管芯片包括依次层叠设置的第一电极、外延片以及第二电极，所述第一电极与所述第二电极设置在所述外延片的两相对应的表面上。所述量子点发光芯片的所述第二电极电性连接在所述驱动基板上的至少一电极区上。\n\n[0006]优选地，所述量子点层的四周边缘与所述微发光二极管芯片的四周边缘齐平设置。\n\n[0007]优选地，所述驱动基板还包括衬底基板及设置在所述衬底基板上的呈阵列分布的多个驱动电路单元，每一所述驱动电路单元包括二个所述电极区，使每一所述驱动电路单元对应地固接在每一所述微发光二极管芯片的所述第一电极上。\n\n[0008]优选地，还包括涂布在所述量子点层上的透明封装体，所述量子点层包括多个量子点粒子以及量子点填料。\n\n[0009]本发明还提供一种发光显示装置的制作方法，包括以下步骤:\n\n[0010]提供衬底，在所述衬底上制作外延片，在所述外延片一侧表面上形成图案化的第一电极；\n\n[0011]键合导电衬底，将具有所述第一电极的所述外延片转移键合到所述导电衬底，以形成阵列分布的多个微发光二极管芯片；\n\n[0012]激光剥离所述外延片的所述衬底，使所述衬底界面处与所述外延片气化分解而剥离；以及\n\n[0013]涂布量子点层在所述微发光二极管芯片上，并切割成单颗量子点发光芯片。\n\n[0014]优选地，所述外延片通过金属有机化合物气相沉积或分子束外延工艺在所述衬底制成，所述第一电极以光刻、刻蚀工艺在所述外延片上形成。\n\n[0015]优选地，在键合导电衬底的步骤中，通过300-500摄氏度高温热压工艺实现，其中在形成所述多个微发光二极管芯片前，还包括在所述导电衬底通过光刻、刻蚀工艺形成第二电极，使所述第一电极与所述第二电极形成在每一所述外延片的两相对应的表面上。\n\n[0016]优选地，还包括将所述单颗量子点发光芯片通过打件或异性导电胶工艺转移到驱动基板上。\n\n[0017]优选地，还包括电性连接所述驱动基板上的至少一电极区，通过加热或加压等工艺将所述单颗量子点发光芯片的所述第一电极与所述驱动基板上的所述电极区结合，使所述量子点发光芯片连接在所述驱动基板上。\n\n[0018]优选地，还包括将透明封装胶体通过喷涂等工艺覆盖在各所述量子点发光芯片上。\n\n[0019]本发明还具有以下功效，本发明垂直结构的量子点发光芯片(QD-miniLED)，第一电极(P电极)和第二电极(N电极)分别位于外延片上下两侧表面，使得电流几乎全部垂直流过外延片的，横向电流极少，因此电流分布均匀，可以避免局部高温，产生的热量也较少。同时，本实施例垂直结构的微发光二极管芯片采用高导热率的导电衬底(Cu)，其散热面积大且导热率高，也有利于发光显示装置的散热。再者，本实施例量子点发光芯片的制作方法采用先涂布量子点层在微发光二极管芯片(LED)后才固接在驱动基板(固晶工艺)上，这种方法直接将量子点层均匀分布在微发光二极管芯片大晶圆上，再切割成单颗小LED，最后再固晶，如此可以精准地将量子点层沉积在LED区域，有效节省昂贵的量子点材料，降低发光显示装置成本。\n\n附图说明\n\n[0020]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0021]图1是现有平面结构的量子点芯片的示意图；\n\n[0022]图2是本发明垂直结构的发光显示装置的示意图；\n\n[0023]图3是本发明晶片键合及激光剥离的流程示意图；\n\n[0024]图4是本发明发光显示装置的制作方法的方块图；及\n\n[0025]图5A至图5C是本发明每一量子点发光芯片转移到驱动基板上的结构示意图。\n\n具体实施方式\n\n[0026]在具体实施方式中提及“实施例”意指结合实施例描述的特定特征、结构或特性可以包含在本发明的至少一个实施例中。在说明书中的不同位置出现的相同用语并非必然被限制为相同的实施方式，而应当理解为与其它实施例互为独立的或备选的实施方式。在本发明提供的实施例所公开的技术方案启示下，本领域的普通技术人员应理解本发明所描述的实施例可具有其他符合本发明构思的技术方案结合或变化。\n\n[0027]请参照图2所示，其为本发明垂直结构的发光显示装置的示意图。如图所示，本发明提供一种发光显示装置100，包括量子点发光芯片150以及驱动基板170。所述量子点发光芯片150包括一体成型制成的微发光二极管芯片110及对应所述微发光二极管芯片110上的量子点层130。在此所述的一体成型的量子点发光芯片150是指先涂布量子点130于微发光二极管芯片110上后才进行固晶工艺，详细制作方法容下所述。\n\n[0028]所述微发光二极管芯片110包括依次层叠设置的第一电极112、外延片114以及第二电极116。所述第一电极112(P电极)与所述第二电极116(N电极)设置在所述外延片114的两相对应的表面上，具体的，P电极112和N电极116分别位于外延片114的上下两侧表面，使得电流几乎全部垂直流过外延片114，横向流动的电流极少，因此电流分布均匀，可以避免局部高温，产生的热量也较少。同时，本实施例垂直结构的微发光二极管芯片110采用高导热率的导电衬底(Cu)，其散热面积大且导热率高，也有利于发光显示装置100的散热，因此能够增加微发光二极管芯片110的散热效果，并有望应用于大功率的发光显示装置100中。\n\n[0029]所述量子点发光芯片150的所述第二电极116电性连接在所述驱动基板170(TFT玻璃背板)上的至少一电极区182/184上(图5A)。请一并参考图5A所示，所述驱动基板170还包括衬底基板172及设置在所述衬底基板172上的呈阵列分布的多个驱动电路单元180，具体的，在本实施例中，驱动基板170可以由刻蚀工艺形成，具有金属线路(图略)和驱动电路单元180(例如场效应晶体管、电容等)，用于驱动量子点发光芯片150发光。驱动基板170可以包括单层线路或多层线路，但並不限定。如图2所示的每一所述驱动电路单元180包括二个所述电极区182、184，使每一所述驱动电路单元180对应地固接在每一所述微发光二极管芯片110的所述第一电极112上。每一微发光二极管芯片110由对应的所述驱动电路单元180控制，以使所述外延片114(例如氮化鎵(GaN))产生的光线在所述量子点层130散射出光。\n\n[0030]须说明的是，由于量子点层130可以均匀分布在微发光二极管芯片110大晶圆上，再切割成单颗小LED，最后再固晶。因此，所述量子点层130的四周边缘与所述微发光二极管芯片110的四周边缘齐平设置，从而精准地将量子点层130沉积在微发光二极管芯片110区域，有效节省昂贵的量子点层130材料，降低发光显示装置100成本。\n\n[0031]所述量子点层130包括多个量子点粒子132以及量子点填料134。量子点粒子132的直径约为5～6纳米，激发后会发出波长较长的光，例如橘光或红光；量子点粒子132的直径约为2～3纳米，激发后会发出波长较短的光，例如蓝光或绿光。因此，便可利用不同尺寸的量子点粒子132，取得不同颜色的光。量子点粒子132发光效率高，量子点粒子132效率高达90％。量子点粒子132可以具有不同粒径或不同材质的复合材料。量子点粒子132的材料例如为硫化铜铟(CIS)、银铟硫(AgInS)、锌铜铟硫(ZCIS)、铜铟镓硫(CIGS)、二氧化钛(TiO2)、二氧化硅(SiO2)、三氧化二铝(Al2O3)、氮化硼(BN)、氧化锌(ZnO)等。量子点填料134包括例如聚合物材料或是烟雾状二氧化硅之填料。聚合物材料包括聚甲基丙烯酸甲酯(PMMA)、聚对苯二甲酸乙二醇酯(PET)、聚间苯二甲酸乙二酯(PEN)、聚苯乙烯(PS)、聚偏氟乙烯(PVDF)、聚乙酸乙烯酯(PVAC)、聚丙烯(PP)、聚酰胺(PA)、聚羧酸酯(PC)、聚酰亚胺(PI)、环氧树脂(epoxy)或硅胶(sil icone)或上述的组合。\n\n[0032]在一实施例中，还包括涂布在所述量子点层130上的透明封装体(图略)，以阻隔空气中的水氧或杂质等，以提高发光显示装置100的信赖性。具体的，透明封装体的材料可以是环氧树脂、聚酰亚胺等透明的封装材料，并不限定。\n\n[0033]请一并参考图3及图4所示，本发明还提供一种发光显示装置100的制作方法，包括以下步骤:\n\n[0034]步骤S10,提供衬底P1，在所述衬底P1上制作外延片P2(100)，在所述外延片P2一侧表面上形成图案化的第一电极112(P电极)。在步骤S10中,虽然对衬底P1的材料等没有特别的限制，但是至少需要具有能够承受后续的加热处理的耐热性，例如可以使用玻璃衬底、陶瓷衬底、石英衬底、蓝宝石衬底等。在本实施例中，所述衬底P1优选为蓝宝石衬底(sapphiresubstrate)。所述外延片P2通过金属有机化合物气相沉积(MOCVD)或分子束外延(Molecular beam epitaxy,MBE)等工艺在所述衬底P1上制成，所述第一电极112以光刻(photoresist)、刻蚀等工艺在所述外延片P2上形成。\n\n[0035]步骤S20,键合导电衬底P2，将具有所述第一电极112的所述外延片P2转移键合到所述导电衬底P3，以形成阵列分布的多个微发光二极管芯片110。在步骤S20中,所述导电衬底P3优选为Cu衬底(Cu substrate)，在键合导电衬底P3的步骤中，通过300-500摄氏度高温热压工艺实现芯片键合(wafer bonding)制作。本步骤中，在形成所述多个微发光二极管芯片110前，还包括在所述导电衬底P3通过光刻(photoresist)、刻蚀等工艺形成第二电极116(N电极)，使所述第一电极112与所述第二电极116形成在所述外延片P2的两相对应的表面上。\n\n[0036]步骤S30,激光P4剥离所述外延片P2的所述衬底P1，使所述衬底P1界面处与所述外延片P2气化分解而剥离。在步骤S30中,激光剥离(laser lift-off)，通过激光P4透过蓝宝石衬底P1辐射界面处的GaN材料，使其气化分解实现所述衬底P1剥离。在本实施例中，通过芯片键合技术与激光剥离技术相结合，将GaN基的外延片P2从蓝宝石衬底P1转移到其他高导电率、高热岛率的衬底，即导电衬底P3(Cu)。由于导电衬底P3的散热面积大且导热率高，也有利于微发光二极管芯片110的散热，因此能够增加微发光二极管芯片110的散热效果，并有望应用于大功率的发光显示装置100中。\n\n[0037]步骤S40,涂布量子点层130在所述微发光二极管芯片110上，并切割成单颗量子点发光芯片150(miniLED chip)。在步骤S40中,单颗量子点发光芯片150的制作，采用先涂布量子点层130在微发光二极管芯片110(LED)后才固接在驱动基板170(固晶工艺)上，这种方法直接将量子点层130均匀分布在微发光二极管芯片110大晶圆上，再切割成单颗小LED，最后再固晶，如此可以精准地将量子点层130沉积在微发光二极管芯片110区域，有效节省昂贵的量子点层130材料，降低发光显示装置100成本。\n\n[0038]请一并参考图5A至图5C所示，其为每一量子点发光芯片150转移到驱动基板170上的结构示意图。如图所示，当完成单颗量子点发光芯片150后，还包括将所述单颗量子点发光芯片150通过打件(SMT/SMD)或异性导电胶(ACF)工艺转移到驱动基板170(TFT玻璃背板)上，如此可在每一量子点发光芯片150上实现红、绿、蓝单独光色发光，或两种光色同时发光，或三种光色同时发光的效果。在图5C中，也可以不设置量子点层130，使量子点发光芯片150单独发白光，视需要而改变。所述驱动基板170还包括衬底基板172及设置在所述衬底基板172上的呈阵列分布的多个驱动电路单元180，具体的，每一量子点发光芯片150还包括电性连接所述驱动基板170上的至少一电极区182/184，通过加热或加压等工艺将所述单颗量子点发光芯片150的所述第一电极112与所述驱动基板170上的所述电极区182/184结合，使所述量子点发光芯片150牢固地连接在所述驱动基板170上以完成固晶作業。\n\n[0039]在本实施例中，还包括将透明封装胶体(图略)通过喷涂等工艺覆盖在各所述量子点发光芯片150上，以阻隔空气中的水氧或杂质等，以提高发光显示装置100的信赖性。具体的，透明封装体的材料可以是环氧树脂、聚酰亚胺等透明的封装材料，并不限定。最后，把外接硬件(IC芯片等)采用例如COF绑定(Bonding)在驱动基板170的相应位置，最后才得到发光显示装置100。\n\n[0040]综上所述，虽然本发明结合其具体实施例而被描述，应该理解的是，许多替代、修改及变化对于那些本领域的技术人员将是显而易见的。因此，其意在包含落入所附权利要求书的范围内的所有替代、修改及变化。');
INSERT INTO `os_patent_instruction_text` VALUES (10970, 24024, '技术领域\n\n[0001]本申请涉及拼接显示技术领域，具体涉及一种拼接显示屏的制备方法及拼接显示屏。\n\n背景技术\n\n[0002]发光二极管(英文全称：Light Emitting Diodes，简称：LED)是一种能将电能转化为光能的半导体电子元件，因其具有体积小、使用寿命长、颜色丰富多彩、能耗低等特点，被广泛应用于照明、显示屏、信号灯、背光源、玩具等领域。Mini LED又称为次毫米发光二极管，其尺寸通常为80微米～200微米，是新一代的LED技术，承接了小间距LED高效率、高可靠性、高亮度和反应时间快的特性，且耗电量和成本更低。\n\n[0003]近年来，柔性电子产品引起全世界的广泛关注并得到了迅速发展。柔性电子产品中的至少部分柔性器件在制作过程中，往往在硬质的玻璃基板上先形成柔性基板，然后在柔性基板上制作相关的电子器件，并在相关的电子器件制作完成后将玻璃基板与柔性基板分离，以形成以柔性基板作为基底的柔性器件。但要做成大尺寸屏幕，需要将多个柔性器件拼接起来，柔性器件拼接难度大，边缘易发生卷边现象，且拼缝也难控制。\n\n发明内容\n\n[0004]本发明的目的是提供一种拼接显示屏的制备方法及拼接显示屏，其能够解决现有的柔性器件拼接过程中存在的拼接难度大，边缘易发生卷边翘起现象等问题。\n\n[0005]为了解决上述问题，本发明提供了一种拼接显示屏的制备方法，其包括以下步骤：提供一玻璃基板，在所述玻璃基板上制备一显示面板；所述显示面板包括依次制备于所述玻璃基板的一侧的表面上的柔性基板以及显示单元，所述玻璃基板及所述显示面板组成第一组件；提供一第一保护膜，将多个所述第一组件拼接于所述第一保护膜的一侧的表面上，所述第一保护膜位于所述显示单元远离所述玻璃基板的一侧；剥离去除每一所述第一组件的所述玻璃基板；提供一第二保护膜，将所述第二保护膜覆盖于每一所述显示面板的柔性基板远离所述显示单元的一侧的表面上。\n\n[0006]进一步的，所述显示面板的制备步骤中还包括：在每一所述显示单元的一端均电连接一覆晶薄膜；以及在每一所述覆晶薄膜远离所述显示单元的一端均电连接一印刷电路板。\n\n[0007]进一步的，在所述第一保护膜上拼接的多个所述第一组件的行数为n，列数为2，所述n≥1。\n\n[0008]进一步的，每一行的相邻两个所述显示单元之间具有拼接缝；每一行的两个所述覆晶薄膜均位于其电连接的所述显示单元的远离所述拼接缝的一端。\n\n[0009]进一步的，所述拼接显示屏的制备方法还包括：在所述第一保护膜、显示面板、第二保护膜组成的第二组件的两端均制作一边框。\n\n[0010]进一步的，所述覆晶薄膜以及所述印刷电路板均位于所述边框内。\n\n[0011]进一步的，所述第一保护膜的材质为透光材质。\n\n[0012]进一步的，所述第一保护膜与所述第二保护膜的材质均为PET。\n\n[0013]进一步的，所述显示单元包括：LED、mini-LED、micro-LED、OLED中的一种。\n\n[0014]为了解决上述问题，本发明还提供了一种拼接显示屏，其采用本发明所述的拼接显示屏的制备方法制备形成。\n\n[0015]本发明的优点是：本发明涉及一种拼接显示屏的制备方法及拼接显示屏，本发明的拼接显示屏的制备方法将玻璃基板及显示面板组成第一组件，将多个第一组件拼接于第一保护膜的一侧的表面上，利用玻璃基板的刚性性能压制所述柔性基板，防止拼接过程中柔性基板发生卷边翘起的现象，提高柔性基板的拼接良率，进而提高制备形成的拼接显示屏的显示效果。\n\n附图说明\n\n[0016]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0017]图1是本发明的拼接显示屏的制备方法步骤图；\n\n[0018]图2是本发明的拼接显示屏的一个第一组件的结构示意图；\n\n[0019]图3为多个第一组件在第一保护膜上的排布示意图；\n\n[0020]图4是图3中的A-A截面示意图；\n\n[0021]图5是图4剥离去除玻璃基板后的结构示意图；\n\n[0022]图6是图5制备第二保护膜及边框后的结构示意图。\n\n[0023]附图标记说明：\n\n[0024]100、第一组件； 200、拼接缝\n\n[0025]300、第二组件；\n\n[0026]1、玻璃基板； 2、显示面板；\n\n[0027]3、第一保护膜； 4、第二保护膜；\n\n[0028]5、边框；\n\n[0029]21、柔性基板； 22、显示单元；\n\n[0030]23、覆晶薄膜； 24、印刷电路板。\n\n具体实施方式\n\n[0031]以下结合说明书附图详细说明本发明的优选实施例，以向本领域中的技术人员完整介绍本发明的技术内容，以举例证明本发明可以实施，使得本发明公开的技术内容更加清楚，使得本领域的技术人员更容易理解如何实施本发明。然而本发明可以通过许多不同形式的实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例，下文实施例的说明并非用来限制本发明的范围。\n\n[0032]本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是附图中的方向，本文所使用的方向用语是用来解释和说明本发明，而不是用来限定本发明的保护范围。\n\n[0033]在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。此外，为了便于理解和描述，附图所示的每一组件的尺寸和厚度是任意示出的，本发明并没有限定每个组件的尺寸和厚度。\n\n[0034]如图1-图6所示，本实施例提供一种拼接显示屏的制备方法，其包括以下步骤：S1，提供一玻璃基板1，在所述玻璃基板1上制备一显示面板2，所述玻璃基板1与所述显示面板2组成第一组件100；S2，提供一第一保护膜3，将多个所述第一组件100拼接于所述第一保护膜3的一侧的表面上，所述第一保护膜3位于所述显示单元22远离所述玻璃基板1的一侧；S3，剥离去除每一所述第一组件100的所述玻璃基板1；S4，提供一第二保护膜4，将所述第二保护膜4覆盖于每一所述显示面板2的柔性基板21远离所述显示单元22的一侧的表面上；S5，在所述第一保护膜3、显示面板2、第二保护膜4组成的第二组件200的两端均制作一边框5。\n\n[0035]如图2所示，所述显示面板2包括依次制备于所述玻璃基板1的一侧的表面上的柔性基板21以及显示单元22。\n\n[0036]本实施例中，所述柔性基板21的材质优选为耐高温的聚酰亚胺(英文全称：Polyimide，简称PI)材料。在其他实施例中，柔性基板21的材质还可以包括二氧化硅、涤纶树脂、聚乙烯、聚丙烯、聚苯乙烯、聚乳酸、聚对苯二甲酸乙二醇酯或聚氨酯等材质。\n\n[0037]本实施例中，所述显示单元22为mini-LED。在其他实施例中，所述显示单元还可以包括：LED、micro-LED、OLED中的一种。\n\n[0038]结合图2所示，所述显示面板2的制备步骤中还包括：在每一所述显示单元22的一端均电连接一覆晶薄膜(英文全称：Chip On Film，简称COF)23；以及在每一所述覆晶薄膜23远离所述显示单元22的一端均电连接一印刷电路板(英文全称：Printed CircuitBoard，简称PCB)24。\n\n[0039]如图3-图4所示，每一行的相邻两个所述第一组件100之间具有拼接缝200。每一行的两个第一组件100的显示面板2的所述覆晶薄膜23均位于其电连接的所述显示单元22的远离所述拼接缝200的一端。例如，本实施例中，左边的第一组件100的覆晶薄膜23位于其电连接的显示单元22的左端，右边的第一组件100的覆晶薄膜23位于其电连接的显示单元22的右端，由此保证所述拼接缝200处没有覆晶薄膜23。\n\n[0040]同理，本实施例中，左边的第一组件100的印刷电路板24位于其电连接的显示单元22的左端，右边的第一组件100的印刷电路板24位于其电连接的显示单元22的右端，由此保证所述拼接缝200处没有印刷电路板24。\n\n[0041]为实现拼接缝200没有覆晶薄膜23及印刷电路板24，因此，在所述第一保护膜3上拼接的多个所述第一组件100的行数为n，列数为2，所述n≥1。本实施例中n＝6。在其他实施例中，也可以是行数为2，列数为n，所述n≥1。\n\n[0042]如图4所示，所述第一保护膜3的材质为透光材质。本实施例中，所述第一保护膜3的材质为PET。利用PET良好的力学性能、耐油、耐脂肪、耐稀酸、稀碱，耐大多数溶剂的性能，由此可以较好的保护其下的显示面板2。同时利用PET的高透明度，由此防止影响显示面板的透光性能。\n\n[0043]如图5所示，本实施例中，通过LLO激光剥离的方式剥离去除每一所述第一组件100的所述玻璃基板1。\n\n[0044]如图6所示，本实施例中，所述第二保护膜4的材质为PET。利用PET良好的力学性能、耐油、耐脂肪、耐稀酸、稀碱，耐大多数溶剂的性能，由此可以较好的保护显示面板2。\n\n[0045]如图6所示，所述覆晶薄膜23以及所述印刷电路板24均位于所述边框5内。本实施例中，所述边框5还包覆部分所述第一保护膜3、第二保护膜4、柔性基板21以及显示单元22。\n\n[0046]本实施例的拼接显示屏的制备方法将玻璃基板1及显示面板2组成第一组件100，将多个第一组件100拼接于第一保护膜3的一侧的表面上，利用玻璃基板1的刚性性能压制所述柔性基板21，防止拼接过程中柔性基板21发生卷边翘起的现象，提高柔性基板21的拼接良率，进而提高制备形成的拼接显示屏的显示效果。\n\n[0047]本实施例还提供一种拼接显示屏。所述拼接显示屏采用本实施例所述的拼接显示屏的制备方法制备形成。\n\n[0048]以上对本申请所提供的一种拼接显示屏的制备方法及拼接显示屏进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及拼接显示技术领域，具体涉及一种拼接显示屏的制备方法及拼接显示屏。\n\n背景技术\n\n[0002]发光二极管(英文全称：Light Emitting Diodes，简称：LED)是一种能将电能转化为光能的半导体电子元件，因其具有体积小、使用寿命长、颜色丰富多彩、能耗低等特点，被广泛应用于照明、显示屏、信号灯、背光源、玩具等领域。Mini LED又称为次毫米发光二极管，其尺寸通常为80微米～200微米，是新一代的LED技术，承接了小间距LED高效率、高可靠性、高亮度和反应时间快的特性，且耗电量和成本更低。\n\n[0003]近年来，柔性电子产品引起全世界的广泛关注并得到了迅速发展。柔性电子产品中的至少部分柔性器件在制作过程中，往往在硬质的玻璃基板上先形成柔性基板，然后在柔性基板上制作相关的电子器件，并在相关的电子器件制作完成后将玻璃基板与柔性基板分离，以形成以柔性基板作为基底的柔性器件。但要做成大尺寸屏幕，需要将多个柔性器件拼接起来，柔性器件拼接难度大，边缘易发生卷边现象，且拼缝也难控制。\n\n发明内容\n\n[0004]本发明的目的是提供一种拼接显示屏的制备方法及拼接显示屏，其能够解决现有的柔性器件拼接过程中存在的拼接难度大，边缘易发生卷边翘起现象等问题。\n\n[0005]为了解决上述问题，本发明提供了一种拼接显示屏的制备方法，其包括以下步骤：提供一玻璃基板，在所述玻璃基板上制备一显示面板；所述显示面板包括依次制备于所述玻璃基板的一侧的表面上的柔性基板以及显示单元，所述玻璃基板及所述显示面板组成第一组件；提供一第一保护膜，将多个所述第一组件拼接于所述第一保护膜的一侧的表面上，所述第一保护膜位于所述显示单元远离所述玻璃基板的一侧；剥离去除每一所述第一组件的所述玻璃基板；提供一第二保护膜，将所述第二保护膜覆盖于每一所述显示面板的柔性基板远离所述显示单元的一侧的表面上。\n\n[0006]进一步的，所述显示面板的制备步骤中还包括：在每一所述显示单元的一端均电连接一覆晶薄膜；以及在每一所述覆晶薄膜远离所述显示单元的一端均电连接一印刷电路板。\n\n[0007]进一步的，在所述第一保护膜上拼接的多个所述第一组件的行数为n，列数为2，所述n≥1。\n\n[0008]进一步的，每一行的相邻两个所述显示单元之间具有拼接缝；每一行的两个所述覆晶薄膜均位于其电连接的所述显示单元的远离所述拼接缝的一端。\n\n[0009]进一步的，所述拼接显示屏的制备方法还包括：在所述第一保护膜、显示面板、第二保护膜组成的第二组件的两端均制作一边框。\n\n[0010]进一步的，所述覆晶薄膜以及所述印刷电路板均位于所述边框内。\n\n[0011]进一步的，所述第一保护膜的材质为透光材质。\n\n[0012]进一步的，所述第一保护膜与所述第二保护膜的材质均为PET。\n\n[0013]进一步的，所述显示单元包括：LED、mini-LED、micro-LED、OLED中的一种。\n\n[0014]为了解决上述问题，本发明还提供了一种拼接显示屏，其采用本发明所述的拼接显示屏的制备方法制备形成。\n\n[0015]本发明的优点是：本发明涉及一种拼接显示屏的制备方法及拼接显示屏，本发明的拼接显示屏的制备方法将玻璃基板及显示面板组成第一组件，将多个第一组件拼接于第一保护膜的一侧的表面上，利用玻璃基板的刚性性能压制所述柔性基板，防止拼接过程中柔性基板发生卷边翘起的现象，提高柔性基板的拼接良率，进而提高制备形成的拼接显示屏的显示效果。\n\n附图说明\n\n[0016]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0017]图1是本发明的拼接显示屏的制备方法步骤图；\n\n[0018]图2是本发明的拼接显示屏的一个第一组件的结构示意图；\n\n[0019]图3为多个第一组件在第一保护膜上的排布示意图；\n\n[0020]图4是图3中的A-A截面示意图；\n\n[0021]图5是图4剥离去除玻璃基板后的结构示意图；\n\n[0022]图6是图5制备第二保护膜及边框后的结构示意图。\n\n[0023]附图标记说明：\n\n[0024]100、第一组件； 200、拼接缝\n\n[0025]300、第二组件；\n\n[0026]1、玻璃基板； 2、显示面板；\n\n[0027]3、第一保护膜； 4、第二保护膜；\n\n[0028]5、边框；\n\n[0029]21、柔性基板； 22、显示单元；\n\n[0030]23、覆晶薄膜； 24、印刷电路板。\n\n具体实施方式\n\n[0031]以下结合说明书附图详细说明本发明的优选实施例，以向本领域中的技术人员完整介绍本发明的技术内容，以举例证明本发明可以实施，使得本发明公开的技术内容更加清楚，使得本领域的技术人员更容易理解如何实施本发明。然而本发明可以通过许多不同形式的实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例，下文实施例的说明并非用来限制本发明的范围。\n\n[0032]本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是附图中的方向，本文所使用的方向用语是用来解释和说明本发明，而不是用来限定本发明的保护范围。\n\n[0033]在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。此外，为了便于理解和描述，附图所示的每一组件的尺寸和厚度是任意示出的，本发明并没有限定每个组件的尺寸和厚度。\n\n[0034]如图1-图6所示，本实施例提供一种拼接显示屏的制备方法，其包括以下步骤：S1，提供一玻璃基板1，在所述玻璃基板1上制备一显示面板2，所述玻璃基板1与所述显示面板2组成第一组件100；S2，提供一第一保护膜3，将多个所述第一组件100拼接于所述第一保护膜3的一侧的表面上，所述第一保护膜3位于所述显示单元22远离所述玻璃基板1的一侧；S3，剥离去除每一所述第一组件100的所述玻璃基板1；S4，提供一第二保护膜4，将所述第二保护膜4覆盖于每一所述显示面板2的柔性基板21远离所述显示单元22的一侧的表面上；S5，在所述第一保护膜3、显示面板2、第二保护膜4组成的第二组件200的两端均制作一边框5。\n\n[0035]如图2所示，所述显示面板2包括依次制备于所述玻璃基板1的一侧的表面上的柔性基板21以及显示单元22。\n\n[0036]本实施例中，所述柔性基板21的材质优选为耐高温的聚酰亚胺(英文全称：Polyimide，简称PI)材料。在其他实施例中，柔性基板21的材质还可以包括二氧化硅、涤纶树脂、聚乙烯、聚丙烯、聚苯乙烯、聚乳酸、聚对苯二甲酸乙二醇酯或聚氨酯等材质。\n\n[0037]本实施例中，所述显示单元22为mini-LED。在其他实施例中，所述显示单元还可以包括：LED、micro-LED、OLED中的一种。\n\n[0038]结合图2所示，所述显示面板2的制备步骤中还包括：在每一所述显示单元22的一端均电连接一覆晶薄膜(英文全称：Chip On Film，简称COF)23；以及在每一所述覆晶薄膜23远离所述显示单元22的一端均电连接一印刷电路板(英文全称：Printed CircuitBoard，简称PCB)24。\n\n[0039]如图3-图4所示，每一行的相邻两个所述第一组件100之间具有拼接缝200。每一行的两个第一组件100的显示面板2的所述覆晶薄膜23均位于其电连接的所述显示单元22的远离所述拼接缝200的一端。例如，本实施例中，左边的第一组件100的覆晶薄膜23位于其电连接的显示单元22的左端，右边的第一组件100的覆晶薄膜23位于其电连接的显示单元22的右端，由此保证所述拼接缝200处没有覆晶薄膜23。\n\n[0040]同理，本实施例中，左边的第一组件100的印刷电路板24位于其电连接的显示单元22的左端，右边的第一组件100的印刷电路板24位于其电连接的显示单元22的右端，由此保证所述拼接缝200处没有印刷电路板24。\n\n[0041]为实现拼接缝200没有覆晶薄膜23及印刷电路板24，因此，在所述第一保护膜3上拼接的多个所述第一组件100的行数为n，列数为2，所述n≥1。本实施例中n＝6。在其他实施例中，也可以是行数为2，列数为n，所述n≥1。\n\n[0042]如图4所示，所述第一保护膜3的材质为透光材质。本实施例中，所述第一保护膜3的材质为PET。利用PET良好的力学性能、耐油、耐脂肪、耐稀酸、稀碱，耐大多数溶剂的性能，由此可以较好的保护其下的显示面板2。同时利用PET的高透明度，由此防止影响显示面板的透光性能。\n\n[0043]如图5所示，本实施例中，通过LLO激光剥离的方式剥离去除每一所述第一组件100的所述玻璃基板1。\n\n[0044]如图6所示，本实施例中，所述第二保护膜4的材质为PET。利用PET良好的力学性能、耐油、耐脂肪、耐稀酸、稀碱，耐大多数溶剂的性能，由此可以较好的保护显示面板2。\n\n[0045]如图6所示，所述覆晶薄膜23以及所述印刷电路板24均位于所述边框5内。本实施例中，所述边框5还包覆部分所述第一保护膜3、第二保护膜4、柔性基板21以及显示单元22。\n\n[0046]本实施例的拼接显示屏的制备方法将玻璃基板1及显示面板2组成第一组件100，将多个第一组件100拼接于第一保护膜3的一侧的表面上，利用玻璃基板1的刚性性能压制所述柔性基板21，防止拼接过程中柔性基板21发生卷边翘起的现象，提高柔性基板21的拼接良率，进而提高制备形成的拼接显示屏的显示效果。\n\n[0047]本实施例还提供一种拼接显示屏。所述拼接显示屏采用本实施例所述的拼接显示屏的制备方法制备形成。\n\n[0048]以上对本申请所提供的一种拼接显示屏的制备方法及拼接显示屏进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10971, 24025, '技术领域\n\n[0001]本申请涉及显示领域，尤其涉及一种阵列基板及其制备方法。\n\n背景技术\n\n[0002]目前迷你/微发光二极管(Mini/Micro Light Emitting Diode，MLED)显示技术进入加速发展阶段。MLED可以应用于中小型显示器，相较有机发光二极管(Organic LightEmitting Display，OLED)显示器，MLED显示器在成本、对比度、高亮度和轻薄外形上表现出更佳性能。在MLED显示技术中，阵列基板技术作为关键技术控制着MLED的显示，但是目前用于控制LED显示的阵列基板容易受到外界环境光的影响，导致阵列基板的稳定性差。\n\n发明内容\n\n[0003]本申请提供一种阵列基板及其制备方法，可以提高阵列基板的稳定性。\n\n[0004]一种阵列基板，包括：\n\n[0005]基板；\n\n[0006]吸光层，所述吸光层设置于所述基板的一侧；\n\n[0007]第一金属层，所述第一金属层设置于所述吸光层远离所述基板的一侧，或所述第一金属层设置于所述基板远离所述吸光层的一侧；\n\n[0008]第二金属层，所述第二金属层设置于所述第一金属层远离所述基板的一侧，所述第二金属层包括栅极、源极、漏极和绑定部，所述绑定部与所述第一金属层连接。\n\n[0009]在本申请的一些实施方式中，所述吸光层的材料为2,8-二氟-5,11-双(三乙基硅烷基乙炔基)双噻吩蒽、6,12-二(三乙基硅乙炔基)二苯并苯并二噻吩或2,7-二癸基二苯并二噻吩中的一种或多种。\n\n[0010]在本申请的一些实施方式中，所述吸光层的厚度为1微米至3微米。\n\n[0011]在本申请的一些实施方式中，所述第二金属层为氧化铟锌/钼/铜的三层金属结构或氧化钼/铜的双层金属结构。\n\n[0012]在本申请的一些实施方式中，所述阵列基板还包括第一缓冲层，所述第一缓冲层设置于所述吸光层与所述第一金属层之间且靠近所述第一金属层。\n\n[0013]在本申请的一些实施方式中，所述阵列基板还包括第二缓冲层、半导体层、栅极绝缘层和第一钝化层，所述第二缓冲层覆盖所述第一金属层，所述半导体层设置于所述第二缓冲层远离所述第一金属层的一侧，所述栅极绝缘层覆盖所述半导体层，所述第一钝化层覆盖所述第二金属层，所述源极与所述半导体层和所述第一金属层连接。\n\n[0014]在本申请的一些实施方式中，所述第一钝化层包括第一开口和第二开口，所述第一开口暴露出所述绑定部，所述第二开口暴露出所述源极。\n\n[0015]在本申请的一些实施方式中，所述阵列基板还包括第二钝化层和黑色矩阵，所述第二钝化层设置于所述第一钝化层远离所述源极和所述漏极的一侧，所述黑色矩阵设置于所述第二钝化层远离所述第一钝化层的一侧。\n\n[0016]相应的，本申请还提供一种阵列基板的制备方法，包括：\n\n[0017]在基板的一侧形成吸光层；\n\n[0018]在所述吸光层远离所述基板的一侧形成第一金属层，或在所述基板远离所述吸光层的一侧形成第一金属层；\n\n[0019]在所述第一金属层远离所述基板的一侧形成第二金属层，对所述第二金属层图案化以形成栅极、源极、漏极和绑定部，所述绑定部与所述第一金属层连接。\n\n[0020]本申请提供一种阵列基板及其制备方法。阵列基板包括：基板。吸光层，所述吸光层设置于所述基板的一侧。第一金属层，所述第一金属层设置于所述吸光层远离所述基板的一侧，或所述第一金属层设置于所述基板远离所述吸光层的一侧。第二金属层，所述第二金属层设置于所述第一金属层远离所述基板的一侧。所述第二金属层包括栅极、源极、漏极和绑定部。所述绑定部与所述第一金属层连接。本申请提供的阵列基板，在基板一侧设置吸光层，提高了阵列基板的光稳定性。与此同时，本申请在同一制程中制备栅极、源极、漏极和绑定部，制备工艺简单，有利于降低制作阵列基板的制作成本。\n\n附图说明\n\n[0021]为了更清楚地说明本申请中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0022]图1为本申请实施例提供的阵列基板的结构示意图。\n\n[0023]图2为本申请提供的阵列基板的第一种实施例沿AA’线的剖面图。\n\n[0024]图3为本申请提供的阵列基板的第二种实施例沿AA’线的剖面图。\n\n[0025]图4为本申请提供的阵列基板的制备方法的第一种实施例的流程图。\n\n[0026]图5为本申请提供的阵列基板的制备方法的第二种实施例的流程图。\n\n[0027]图6a-6l为本申请提供的阵列基板的制备方法的第二种实施例的示意图。\n\n具体实施方式\n\n[0028]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0029]需要说明的是，本申请所提到的[第一]、[第二]、[第三]和[第四]等序号用语并不代表任何顺序、数量或者重要性，只是用于区分不同的部分。本申请所提到的[上]、[下]、[左]和[右]等方向用语仅是参考附加图式的方向。因此，使用的序号用语、方向用语和位置关系用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是以相同标号表示。\n\n[0030]本申请提供一种阵列基板及其制备方法，下面将结合具体实施例对本申请进行详细说明。\n\n[0031]请参阅图1-3，图1为本申请实施例提供的阵列基板的结构示意图。图2为本申请提供的阵列基板的第一种实施例沿AA’线的剖面图。图3为本申请提供的阵列基板的第二种实施例沿AA’线的剖面图。\n\n[0032]如图2所示，阵列基板100包括基板101、吸光层102、第一金属层103以及第二金属层104。吸光层102设置于基板101的一侧。第一金属层103可以设置于吸光层102远离基板101的一侧。或者如图3所示，第一金属层103也可以设置于基板101远离吸光层102的一侧。第二金属层104设置于第一金属层103远离基板101的一侧。第二金属层104包括栅极1041、源极1042、漏极1043以及绑定部1044。绑定部1044与第一金属层103连接。\n\n[0033]其中，基板101可以是玻璃基板或柔性基板。吸光层102可以通过涂布的方式形成。第一金属层103可以由钼(Mo)或钼(Mo)/铜(Cu)的叠层金属形成。第一金属层103可以通过物理气相沉积的方式形成。\n\n[0034]本申请通过在基板101一侧设置吸光层102，提高了阵列基板100的光稳定性。此外，本申请还通过在同一制程中制备栅极1041、源极1042、漏极1043和绑定部1044，简化了阵列基板100的制备工艺。\n\n[0035]在一些实施例中，第一金属层103包括遮光部1031、连接部1032和第一极板1033。绑定部1044与连接部1032连接。第二金属层104还包括第二极板1045。第二极板1045与第一极板1033对应设置。第一极板1033在基板101上的正投影与第二极板1045在基板101上的正投影至少部分重叠。\n\n[0036]在一些实施例中，吸光层102的材料为2,8-二氟-5,11-双(三乙基硅烷基乙炔基)双噻吩蒽、6,12-二(三乙基硅乙炔基)二苯并苯并二噻吩或2,7-二癸基二苯并二噻吩中的一种或多种。\n\n[0037]噻吩系有机半导体具有较强的光响应特性，作为吸光层102可以减少外界环境光对阵列基板100的影响，提高了阵列基板100的光稳定性。此外，噻吩系的有机半导体还具有含氢量低和稳定性高等特性，作为吸光层102不会对阵列基板100产生不良影响。\n\n[0038]在一些实施例中，吸光层102的厚度为1微米至3微米。具体的，吸光层102的厚度为1微米、2微米或3微米。\n\n[0039]本申请通过设置吸光层102的厚度小于3微米，可以避免因吸光层102的厚度过大，而不利于显示装置轻薄化的发展趋势。设置吸光层102的厚度大于1微米可以避免因吸光层102的厚度过薄，而不利于对外界环境光的吸收，从而不利于提高阵列基板100的光稳定性。\n\n[0040]在一些实施例中，第二金属层104为氧化铟锌(IZO)/钼(Mo)/铜(Cu)的三层金属结构或氧化钼(MoOX)/铜(Cu)的双层金属结构。\n\n[0041]其中，在IZO/Mo/Cu的三层金属结构中，IZO作为低反射功能层。Cu作为电极层。通过将Mo设置在IZO与Cu之间，可以提高IZO与Cu的贴合性。IZO的厚度为15纳米至30纳米。具体的，IZO的厚度为15纳米、20纳米、25纳米或30纳米。在MoOX/Cu双层金属结构中，MoOX作为低反射功能层。Cu作为电极层。MoOX的厚度为20纳米至30纳米。具体的，MoOX的厚度为20纳米、25纳米或30纳米。\n\n[0042]本申请通过将第二金属层104设置为IZO/Mo/Cu的三层金属结构或MoOX/Cu的双层金属结构。其中，IZO和MoOX作为低反射功能层，可以减少散射光经过栅极、源极和漏极再次反射进入有源层而影响阵列基板100的稳定性。本申请还通过将IZO的厚度设置为15纳米至30纳米，MoOX的厚度设置为20纳米至30纳米，有利于在对第二金属层104图案化时，IZO和MoOX易于除去。\n\n[0043]在一些实施例中，阵列基板100还包括第一缓冲层105。第一缓冲层105设置于吸光层102与第一金属层103之间且靠近第一金属层103。\n\n[0044]其中，第一缓冲层105可以由氧化硅(SiOX)或氧化硅(SiOX)/氮化硅(SiNX)的叠层形成。第一缓冲层105可以通过化学气相沉积的方式形成。\n\n[0045]本申请通过在吸光层102与第一金属层103之间且靠近第一金属层103的一侧设置第一缓冲层105，可以提高第一金属层103与基板101的贴合性，保证第一金属层103不易发生脱落。\n\n[0046]在一些实施例中，阵列基板还包括第二缓冲层106、半导体层107、栅极绝缘层108和第一钝化层109。第二缓冲层106覆盖第一金属层103。半导体层107设置于第二缓冲层106远离第一金属层103的一侧。栅极绝缘层108覆盖半导体层107。第一钝化层109覆盖第二金属层104。源极1042与半导体层107和第一金属层103连接。\n\n[0047]在一些实施例中，半导体层107包括有源部1071和第三极板1072。有源部1071与遮光部1031对应设置。第三极板1072与第一极板1033和第二极板1045对应设置。其中，第一极板1033、第三极板1072以及第二缓冲层106形成第一电容。第二极板1045、第三极板1072以及栅极绝缘层108形成第二电容。第一电容和第二电容并联连接。\n\n[0048]其中，第二缓冲层106可以由SiOX或SiOX/SiNX的叠层形成。第二缓冲层106可以通过化学气相沉积的方式形成。半导体层107可以由氧化镓铟锌(IGZO)、氧化镓锌铟锡(IGZTO)或氧化镓铟锡(IGTO)中的一种或多种形成。栅极绝缘层108可以由SiOX或SiOX/SiNX的叠层形成。第一钝化层109可以由SiOX或SiOX/SiNX的叠层形成。第一钝化层109可以通过化学气相沉积的方式形成。\n\n[0049]在一些实施例中，第一钝化层109包括第一开口1091和第二开口1092。第一开口1091暴露出绑定部1044。第二开口1092暴露出源极1042。\n\n[0050]本申请通过在第一钝化层109中设置第一开口1091并暴露出绑定部1044，可以实现绑定部1044与数据线的连接。通过在第一钝化层109中设置第二开口1092并暴露出源极1042，可以实现源极1042与发光二极管111的连接。\n\n[0051]在一些实施例中，第一开口1091内设置有保护层110。保护层110覆盖绑定部1044。第二开口1092内设置有发光二极管111，发光二极管111与源极1042连接。\n\n[0052]其中，发光二极管111可以是MiniLED或MicroLED中的一种。保护层110可以由氧化铟锡(ITO)或氧化铟锌(IZO)等金属氧化物形成。保护层110可以通过物理气相沉积的方式形成。保护层110的厚度为50纳米至100纳米。具体的保护层110的厚度为50纳米、60纳米、70纳米、80纳米、90纳米或100纳米。\n\n[0053]本申请通过在绑定部1044上设置保护层110，可以防止绑定部1044被外界水汽侵蚀，还可以防止在后续制程中，高温引起绑定部1044发生热氧化，造成绑定不良。同时，由于ITO和IZO的成膜性好，通过在绑定部1044上设置保护层110，还可以提高绑定部1044的平整度，从而提高绑定的可靠性。\n\n[0054]在一些实施例中，阵列基板100还包括第二钝化层112和黑色矩阵113。第二钝化层112设置于第一钝化层109远离源极1042和漏极1043的一侧。黑色矩阵113设置于第二钝化层112远离第一钝化层109的一侧。\n\n[0055]其中，第二钝化层112可以由SiOX或SiOX/SiNX的叠层形成。第二钝化层112可以通过化学气相沉积的方式形成。黑色矩阵113可以由高遮光的光阻材料形成。黑色矩阵113可以作为薄膜晶体管沟道区的遮光层。\n\n[0056]本申请通过在黑色矩阵113与第一钝化层109之间设置第二钝化层112，防止在形成黑色矩阵113时，对第二金属层104产生影响。通过设置黑色矩阵113，可以阻挡外界光线对薄膜晶体管的影响，从而提高阵列基板100的稳定性。\n\n[0057]请参阅图4，图4为本申请提供的阵列基板的制备方法的第一种实施例的流程图。\n\n[0058]本申请提供一种阵列基板的制备方法，包括：\n\n[0059]步骤B10：在基板的一侧形成吸光层。\n\n[0060]其中，基板可以是玻璃基板或柔性基板。吸光层可以为2,8-二氟-5,11-双(三乙基硅烷基乙炔基)双噻吩蒽、6,12-二(三乙基硅乙炔基)二苯并苯并二噻吩或2,7-二癸基二苯并二噻吩中的一种或多种。吸光层可以通过涂布的方式形成。经波长为250纳米至300纳米的紫外光照射5分钟至10分钟固化，再在温度为200摄氏度至300摄氏度的条件下高温烘烤1小时至2小时。具体的，紫外光的波长可以为250纳米、280纳米或300纳米。紫外光的照射时间可以为5分钟、8分钟或10分钟。烘烤温度可以为200摄氏度、250摄氏度或300摄氏度。烘烤的时间为1小时、1.5小时或2小时。具体的，吸光层的厚度为1微米至3微米。吸光层102的厚度可以为1微米、2微米或3微米。\n\n[0061]步骤B20：在所述吸光层远离所述基板的一侧形成第一金属层，或在所述基板远离所述吸光层的一侧形成第一金属层。\n\n[0062]其中，第一金属层可以由Mo或Mo/Cu的叠层金属形成。第一金属层可以通过物理气相沉积的方式形成。\n\n[0063]步骤B30：在所述第一金属层远离所述基板的一侧形成第二金属层，对所述第二金属层图案化以形成栅极、源极、漏极和绑定部，所述绑定部与所述第一金属层连接。\n\n[0064]其中，第二金属层可以由IZO/Mo/Cu的三层金属结构或MoOX/Cu双层金属结构形成。其中，在IZO/Mo/Cu的三层金属结构中，IZO作为低反射功能层。Cu作为电极层。通过将Mo设置在IZO与Cu之间，可以提高IZO与Cu的贴合性。IZO的厚度为15纳米至30纳米。具体的，IZO的厚度为15纳米、20纳米、25纳米或30纳米。在MoOX/Cu双层金属结构中，MoOX作为低反射功能层。Cu作为电极层。MoOX的厚度为20纳米至30纳米。具体的，MoOX的厚度为20纳米、25纳米或30纳米。\n\n[0065]本申请通过在基板一侧设置吸光层，提高了阵列基板的光稳定性。此外，本申请还通过在同一制程中制备栅极、源极、漏极以及绑定部，简化了阵列基板的制备工艺。本申请还通过采用具有低反射功能层的材料制备栅极、源极、漏极以及绑定部，减少了外界环境光的散射，从而减少外界环境光对阵列基板的影响。\n\n[0066]请参阅图5和6a-6l，图5为本申请提供的阵列基板的制备方法的第二种实施例的流程图。图6a-6l为本申请提供的阵列基板的制备方法的第二种实施例的示意图。\n\n[0067]本申请还提供一种阵列基板的制备方法，包括：\n\n[0068]步骤B10：在基板的一侧形成吸光层。\n\n[0069]如图6a所示，在基板101的一侧形成吸光层102。基板101可以是玻璃基板或柔性基板。吸光层102可以为2,8-二氟-5,11-双(三乙基硅烷基乙炔基)双噻吩蒽、6,12-二(三乙基硅乙炔基)二苯并苯并二噻吩或2,7-二癸基二苯并二噻吩中的一种或多种。\n\n[0070]步骤B40：在吸光层远离基板的一侧形成第一缓冲层；或在基板远离吸光层的一侧形成第一缓冲层。\n\n[0071]如图6b-6c所示，在吸光层102远离基板101的一侧形成第一缓冲层105；或在基板101远离吸光层102的一侧形成第一缓冲层105。第一缓冲层105可以由SiOX或SiOX/SiNX的叠层形成。第一缓冲层105可以采用化学气相沉积的方式形成。\n\n[0072]步骤B50：在吸光层远离基板的一侧形成第一金属层，或在基板远离吸光层的一侧形成第一金属层,对第一金属层图案化以形成遮光部、连接部和第一极板。\n\n[0073]如图6d所示，在吸光层102远离基板101的一侧形成第一金属层103，或在基板101远离吸光层102的一侧形成第一金属层103。可以采用双氧水系蚀刻液对第一金属层103图案化以形成遮光部1031、连接部1032和第一极板1033。第一金属层103可以由Mo或Mo/Cu的叠层金属形成。第一金属层103可以通过物理气相沉积的方式形成。\n\n[0074]步骤B60：形成覆盖第一金属层的第二缓冲层。\n\n[0075]如图6e所示，形成覆盖第一金属层103的第二缓冲层106。第二缓冲层106可以由SiOX或SiOX/SiNX的叠层形成。第二缓冲层106可以采用化学气相沉积的方式形成。\n\n[0076]步骤B70：在第二缓冲层远离第一金属层的一侧形成半导体层。\n\n[0077]如图6e所示，在第二缓冲层106远离第一金属层103的一侧形成半导体层107。在第二缓冲层106远离第一金属层103的一侧形成半导体层107之前需要高温退火处理2-3小时，退火温度为300摄氏度至400摄氏度。具体的，退火温度可以为300摄氏度、350摄氏度或400摄氏度。具体的，退火时间可以为2小时、2.3小时或3小时。半导体层107可以由IGZO、IGZTO或IGTO中的一种或多种形成。对半导体层107图案化以形成有源部1071和第三极板1072。其中，有源部1071与遮光部1031对应设置。遮光部1031在基板101上的正投影覆盖有源部1071在基板101上的正投影。\n\n[0078]步骤B80：在半导体层远离第二缓冲层的一侧形成栅极绝缘层。\n\n[0079]如图6f所示，在半导体层107远离第二缓冲层106的一侧形成栅极绝缘层108。栅极绝缘层108可以由SiOX或SiOX/SiNX的叠层形成。\n\n[0080]步骤B90：在第二缓冲层和栅极绝缘层中形成第一开孔、第二开孔、第三开孔和第四开孔，第一开孔和第二开孔暴露出第一金属层，第三开孔和第四开孔暴露出半导体层形成沟道区和非沟道区。\n\n[0081]如图6g所示，在第二缓冲层106和栅极绝缘层108中形成第一开孔1081、第二开孔1082、第三开孔1083和第四开孔1084。第一开孔1081和第二开孔1082暴露出第一金属层103，第三开孔1083和第四开孔1084暴露出半导体层107形成沟道区和非沟道区。其中，采用等离子处理第三开孔1083和第四开孔1084。将有源部1071形成薄膜晶体管的沟道区和非沟道区。其中，有源部1071被导体化的区域为薄膜晶体管的非沟道区。\n\n[0082]步骤B100：在第一金属层远离基板的一侧形成第二金属层，对第二金属层图案化以形成栅极、源极、漏极、绑定部和第二极板，绑定部与连接部连接，第二极板与第一极板对应设置。\n\n[0083]如图6h所示，在第一金属层103远离基板101的一侧形成第二金属层104。对第二金属层104图案化以形成栅极1041、源极1042、漏极1043、绑定部1044和第二极板1045。绑定部1044与连接部1032接。第二极板1045与第一极板1033对应设置。第二金属层104可以由IZO/Mo/Cu的三层金属结构或MoOX/Cu双层金属结构形成。其中，在IZO/Mo/Cu的三层金属结构中，IZO作为低反射功能层。Cu作为电极层。通过将Mo设置在IZO与Cu之间，可以提高IZO与Cu的贴合性。IZO的厚度为15纳米至30纳米。具体的，IZO的厚度为15纳米、20纳米、25纳米或30纳米。在MoOX/Cu双层金属结构中，MoOX作为低反射功能层。Cu作为电极层。MoOX的厚度为20纳米至30纳米。具体的，MoOX的厚度为20纳米、25纳米或30纳米。\n\n[0084]步骤B110：形成覆盖第二金属层的第一钝化层，对第一钝化层图案化以形成第一开口和第二开口，第一开口与第一开孔对应设置，第一开口暴露出绑定部，第二开口暴露出源极。\n\n[0085]如图6i所示，形成覆盖第二金属层104的第一钝化层109，对第一钝化层109图案化以形成第一开口1091和第二开口1092。第一钝化层109可以由SiOX或SiOX/SiNX的叠层形成。第一钝化层109可以通过化学气相沉积的方式形成。\n\n[0086]步骤B120：在第一开口内形成保护层。\n\n[0087]如图6j所示，在第一开口1091内形成保护层110。保护层110覆盖绑定部1044。保护层110以由ITO或IZO形成。保护层110可以通过物理气相沉积的方式形成。保护层110的厚度为50纳米至100纳米。具体的保护层110的厚度为50纳米、60纳米、70纳米、80纳米、90纳米或100纳米。\n\n[0088]步骤B130：在第一钝化层远离第二金属层的一侧形成第二钝化层。\n\n[0089]如图6k所示，在第一钝化层109远离第二金属层104的一侧形成第二钝化层112。第二钝化层112可以由SiOX或SiOX/SiNX的叠层形成。第二钝化层112可以通过化学气相沉积的形成。\n\n[0090]步骤B140：在第二钝化层远离第一钝化层的一侧形成黑色矩阵。\n\n[0091]如图6l所示，在第二钝化层112远离第一钝化层109的一侧形成黑色矩阵113。黑色矩阵113可以由高遮光的光阻材料形成。黑色矩阵113可以作为薄膜晶体管沟道区的遮光层，防止外界环境光进入到薄膜晶体管的沟道区，影响薄膜晶体管的稳定性。\n\n[0092]步骤B150：在第二开口内形成发光二极管。\n\n[0093]如图2所示，在第二开口1092内形成发光二极管111。发光二极管111可以是MiniLED或MicroLED中的一种。\n\n[0094]在一些实施例中，在第二开口1092内形成发光二极管111之前还可以包括锡膏印刷和ACF胶贴合。\n\n[0095]本申请通过在基板一侧设置吸光层，提高了阵列基板的光稳定性。此外，本申请还通过在同一制程中制备栅极、源极、漏极以及绑定部，简化了阵列基板的制备工艺。通过采用具有低反射功能层的材料制备栅极、源极、漏极以及绑定部，减少了外界环境光的散射，从而减少外界环境光对阵列基板的影响。\n\n[0096]综上所述，虽然本申请实施例的详细介绍如上，但上述实施例并非用以限制本申请，本领域的普通技术人员应当理解：其依然可以对前述实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示领域，尤其涉及一种阵列基板及其制备方法。\n\n背景技术\n\n[0002]目前迷你/微发光二极管(Mini/Micro Light Emitting Diode，MLED)显示技术进入加速发展阶段。MLED可以应用于中小型显示器，相较有机发光二极管(Organic LightEmitting Display，OLED)显示器，MLED显示器在成本、对比度、高亮度和轻薄外形上表现出更佳性能。在MLED显示技术中，阵列基板技术作为关键技术控制着MLED的显示，但是目前用于控制LED显示的阵列基板容易受到外界环境光的影响，导致阵列基板的稳定性差。\n\n发明内容\n\n[0003]本申请提供一种阵列基板及其制备方法，可以提高阵列基板的稳定性。\n\n[0004]一种阵列基板，包括：\n\n[0005]基板；\n\n[0006]吸光层，所述吸光层设置于所述基板的一侧；\n\n[0007]第一金属层，所述第一金属层设置于所述吸光层远离所述基板的一侧，或所述第一金属层设置于所述基板远离所述吸光层的一侧；\n\n[0008]第二金属层，所述第二金属层设置于所述第一金属层远离所述基板的一侧，所述第二金属层包括栅极、源极、漏极和绑定部，所述绑定部与所述第一金属层连接。\n\n[0009]在本申请的一些实施方式中，所述吸光层的材料为2,8-二氟-5,11-双(三乙基硅烷基乙炔基)双噻吩蒽、6,12-二(三乙基硅乙炔基)二苯并苯并二噻吩或2,7-二癸基二苯并二噻吩中的一种或多种。\n\n[0010]在本申请的一些实施方式中，所述吸光层的厚度为1微米至3微米。\n\n[0011]在本申请的一些实施方式中，所述第二金属层为氧化铟锌/钼/铜的三层金属结构或氧化钼/铜的双层金属结构。\n\n[0012]在本申请的一些实施方式中，所述阵列基板还包括第一缓冲层，所述第一缓冲层设置于所述吸光层与所述第一金属层之间且靠近所述第一金属层。\n\n[0013]在本申请的一些实施方式中，所述阵列基板还包括第二缓冲层、半导体层、栅极绝缘层和第一钝化层，所述第二缓冲层覆盖所述第一金属层，所述半导体层设置于所述第二缓冲层远离所述第一金属层的一侧，所述栅极绝缘层覆盖所述半导体层，所述第一钝化层覆盖所述第二金属层，所述源极与所述半导体层和所述第一金属层连接。\n\n[0014]在本申请的一些实施方式中，所述第一钝化层包括第一开口和第二开口，所述第一开口暴露出所述绑定部，所述第二开口暴露出所述源极。\n\n[0015]在本申请的一些实施方式中，所述阵列基板还包括第二钝化层和黑色矩阵，所述第二钝化层设置于所述第一钝化层远离所述源极和所述漏极的一侧，所述黑色矩阵设置于所述第二钝化层远离所述第一钝化层的一侧。\n\n[0016]相应的，本申请还提供一种阵列基板的制备方法，包括：\n\n[0017]在基板的一侧形成吸光层；\n\n[0018]在所述吸光层远离所述基板的一侧形成第一金属层，或在所述基板远离所述吸光层的一侧形成第一金属层；\n\n[0019]在所述第一金属层远离所述基板的一侧形成第二金属层，对所述第二金属层图案化以形成栅极、源极、漏极和绑定部，所述绑定部与所述第一金属层连接。\n\n[0020]本申请提供一种阵列基板及其制备方法。阵列基板包括：基板。吸光层，所述吸光层设置于所述基板的一侧。第一金属层，所述第一金属层设置于所述吸光层远离所述基板的一侧，或所述第一金属层设置于所述基板远离所述吸光层的一侧。第二金属层，所述第二金属层设置于所述第一金属层远离所述基板的一侧。所述第二金属层包括栅极、源极、漏极和绑定部。所述绑定部与所述第一金属层连接。本申请提供的阵列基板，在基板一侧设置吸光层，提高了阵列基板的光稳定性。与此同时，本申请在同一制程中制备栅极、源极、漏极和绑定部，制备工艺简单，有利于降低制作阵列基板的制作成本。\n\n附图说明\n\n[0021]为了更清楚地说明本申请中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0022]图1为本申请实施例提供的阵列基板的结构示意图。\n\n[0023]图2为本申请提供的阵列基板的第一种实施例沿AA’线的剖面图。\n\n[0024]图3为本申请提供的阵列基板的第二种实施例沿AA’线的剖面图。\n\n[0025]图4为本申请提供的阵列基板的制备方法的第一种实施例的流程图。\n\n[0026]图5为本申请提供的阵列基板的制备方法的第二种实施例的流程图。\n\n[0027]图6a-6l为本申请提供的阵列基板的制备方法的第二种实施例的示意图。\n\n具体实施方式\n\n[0028]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0029]需要说明的是，本申请所提到的[第一]、[第二]、[第三]和[第四]等序号用语并不代表任何顺序、数量或者重要性，只是用于区分不同的部分。本申请所提到的[上]、[下]、[左]和[右]等方向用语仅是参考附加图式的方向。因此，使用的序号用语、方向用语和位置关系用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是以相同标号表示。\n\n[0030]本申请提供一种阵列基板及其制备方法，下面将结合具体实施例对本申请进行详细说明。\n\n[0031]请参阅图1-3，图1为本申请实施例提供的阵列基板的结构示意图。图2为本申请提供的阵列基板的第一种实施例沿AA’线的剖面图。图3为本申请提供的阵列基板的第二种实施例沿AA’线的剖面图。\n\n[0032]如图2所示，阵列基板100包括基板101、吸光层102、第一金属层103以及第二金属层104。吸光层102设置于基板101的一侧。第一金属层103可以设置于吸光层102远离基板101的一侧。或者如图3所示，第一金属层103也可以设置于基板101远离吸光层102的一侧。第二金属层104设置于第一金属层103远离基板101的一侧。第二金属层104包括栅极1041、源极1042、漏极1043以及绑定部1044。绑定部1044与第一金属层103连接。\n\n[0033]其中，基板101可以是玻璃基板或柔性基板。吸光层102可以通过涂布的方式形成。第一金属层103可以由钼(Mo)或钼(Mo)/铜(Cu)的叠层金属形成。第一金属层103可以通过物理气相沉积的方式形成。\n\n[0034]本申请通过在基板101一侧设置吸光层102，提高了阵列基板100的光稳定性。此外，本申请还通过在同一制程中制备栅极1041、源极1042、漏极1043和绑定部1044，简化了阵列基板100的制备工艺。\n\n[0035]在一些实施例中，第一金属层103包括遮光部1031、连接部1032和第一极板1033。绑定部1044与连接部1032连接。第二金属层104还包括第二极板1045。第二极板1045与第一极板1033对应设置。第一极板1033在基板101上的正投影与第二极板1045在基板101上的正投影至少部分重叠。\n\n[0036]在一些实施例中，吸光层102的材料为2,8-二氟-5,11-双(三乙基硅烷基乙炔基)双噻吩蒽、6,12-二(三乙基硅乙炔基)二苯并苯并二噻吩或2,7-二癸基二苯并二噻吩中的一种或多种。\n\n[0037]噻吩系有机半导体具有较强的光响应特性，作为吸光层102可以减少外界环境光对阵列基板100的影响，提高了阵列基板100的光稳定性。此外，噻吩系的有机半导体还具有含氢量低和稳定性高等特性，作为吸光层102不会对阵列基板100产生不良影响。\n\n[0038]在一些实施例中，吸光层102的厚度为1微米至3微米。具体的，吸光层102的厚度为1微米、2微米或3微米。\n\n[0039]本申请通过设置吸光层102的厚度小于3微米，可以避免因吸光层102的厚度过大，而不利于显示装置轻薄化的发展趋势。设置吸光层102的厚度大于1微米可以避免因吸光层102的厚度过薄，而不利于对外界环境光的吸收，从而不利于提高阵列基板100的光稳定性。\n\n[0040]在一些实施例中，第二金属层104为氧化铟锌(IZO)/钼(Mo)/铜(Cu)的三层金属结构或氧化钼(MoOX)/铜(Cu)的双层金属结构。\n\n[0041]其中，在IZO/Mo/Cu的三层金属结构中，IZO作为低反射功能层。Cu作为电极层。通过将Mo设置在IZO与Cu之间，可以提高IZO与Cu的贴合性。IZO的厚度为15纳米至30纳米。具体的，IZO的厚度为15纳米、20纳米、25纳米或30纳米。在MoOX/Cu双层金属结构中，MoOX作为低反射功能层。Cu作为电极层。MoOX的厚度为20纳米至30纳米。具体的，MoOX的厚度为20纳米、25纳米或30纳米。\n\n[0042]本申请通过将第二金属层104设置为IZO/Mo/Cu的三层金属结构或MoOX/Cu的双层金属结构。其中，IZO和MoOX作为低反射功能层，可以减少散射光经过栅极、源极和漏极再次反射进入有源层而影响阵列基板100的稳定性。本申请还通过将IZO的厚度设置为15纳米至30纳米，MoOX的厚度设置为20纳米至30纳米，有利于在对第二金属层104图案化时，IZO和MoOX易于除去。\n\n[0043]在一些实施例中，阵列基板100还包括第一缓冲层105。第一缓冲层105设置于吸光层102与第一金属层103之间且靠近第一金属层103。\n\n[0044]其中，第一缓冲层105可以由氧化硅(SiOX)或氧化硅(SiOX)/氮化硅(SiNX)的叠层形成。第一缓冲层105可以通过化学气相沉积的方式形成。\n\n[0045]本申请通过在吸光层102与第一金属层103之间且靠近第一金属层103的一侧设置第一缓冲层105，可以提高第一金属层103与基板101的贴合性，保证第一金属层103不易发生脱落。\n\n[0046]在一些实施例中，阵列基板还包括第二缓冲层106、半导体层107、栅极绝缘层108和第一钝化层109。第二缓冲层106覆盖第一金属层103。半导体层107设置于第二缓冲层106远离第一金属层103的一侧。栅极绝缘层108覆盖半导体层107。第一钝化层109覆盖第二金属层104。源极1042与半导体层107和第一金属层103连接。\n\n[0047]在一些实施例中，半导体层107包括有源部1071和第三极板1072。有源部1071与遮光部1031对应设置。第三极板1072与第一极板1033和第二极板1045对应设置。其中，第一极板1033、第三极板1072以及第二缓冲层106形成第一电容。第二极板1045、第三极板1072以及栅极绝缘层108形成第二电容。第一电容和第二电容并联连接。\n\n[0048]其中，第二缓冲层106可以由SiOX或SiOX/SiNX的叠层形成。第二缓冲层106可以通过化学气相沉积的方式形成。半导体层107可以由氧化镓铟锌(IGZO)、氧化镓锌铟锡(IGZTO)或氧化镓铟锡(IGTO)中的一种或多种形成。栅极绝缘层108可以由SiOX或SiOX/SiNX的叠层形成。第一钝化层109可以由SiOX或SiOX/SiNX的叠层形成。第一钝化层109可以通过化学气相沉积的方式形成。\n\n[0049]在一些实施例中，第一钝化层109包括第一开口1091和第二开口1092。第一开口1091暴露出绑定部1044。第二开口1092暴露出源极1042。\n\n[0050]本申请通过在第一钝化层109中设置第一开口1091并暴露出绑定部1044，可以实现绑定部1044与数据线的连接。通过在第一钝化层109中设置第二开口1092并暴露出源极1042，可以实现源极1042与发光二极管111的连接。\n\n[0051]在一些实施例中，第一开口1091内设置有保护层110。保护层110覆盖绑定部1044。第二开口1092内设置有发光二极管111，发光二极管111与源极1042连接。\n\n[0052]其中，发光二极管111可以是MiniLED或MicroLED中的一种。保护层110可以由氧化铟锡(ITO)或氧化铟锌(IZO)等金属氧化物形成。保护层110可以通过物理气相沉积的方式形成。保护层110的厚度为50纳米至100纳米。具体的保护层110的厚度为50纳米、60纳米、70纳米、80纳米、90纳米或100纳米。\n\n[0053]本申请通过在绑定部1044上设置保护层110，可以防止绑定部1044被外界水汽侵蚀，还可以防止在后续制程中，高温引起绑定部1044发生热氧化，造成绑定不良。同时，由于ITO和IZO的成膜性好，通过在绑定部1044上设置保护层110，还可以提高绑定部1044的平整度，从而提高绑定的可靠性。\n\n[0054]在一些实施例中，阵列基板100还包括第二钝化层112和黑色矩阵113。第二钝化层112设置于第一钝化层109远离源极1042和漏极1043的一侧。黑色矩阵113设置于第二钝化层112远离第一钝化层109的一侧。\n\n[0055]其中，第二钝化层112可以由SiOX或SiOX/SiNX的叠层形成。第二钝化层112可以通过化学气相沉积的方式形成。黑色矩阵113可以由高遮光的光阻材料形成。黑色矩阵113可以作为薄膜晶体管沟道区的遮光层。\n\n[0056]本申请通过在黑色矩阵113与第一钝化层109之间设置第二钝化层112，防止在形成黑色矩阵113时，对第二金属层104产生影响。通过设置黑色矩阵113，可以阻挡外界光线对薄膜晶体管的影响，从而提高阵列基板100的稳定性。\n\n[0057]请参阅图4，图4为本申请提供的阵列基板的制备方法的第一种实施例的流程图。\n\n[0058]本申请提供一种阵列基板的制备方法，包括：\n\n[0059]步骤B10：在基板的一侧形成吸光层。\n\n[0060]其中，基板可以是玻璃基板或柔性基板。吸光层可以为2,8-二氟-5,11-双(三乙基硅烷基乙炔基)双噻吩蒽、6,12-二(三乙基硅乙炔基)二苯并苯并二噻吩或2,7-二癸基二苯并二噻吩中的一种或多种。吸光层可以通过涂布的方式形成。经波长为250纳米至300纳米的紫外光照射5分钟至10分钟固化，再在温度为200摄氏度至300摄氏度的条件下高温烘烤1小时至2小时。具体的，紫外光的波长可以为250纳米、280纳米或300纳米。紫外光的照射时间可以为5分钟、8分钟或10分钟。烘烤温度可以为200摄氏度、250摄氏度或300摄氏度。烘烤的时间为1小时、1.5小时或2小时。具体的，吸光层的厚度为1微米至3微米。吸光层102的厚度可以为1微米、2微米或3微米。\n\n[0061]步骤B20：在所述吸光层远离所述基板的一侧形成第一金属层，或在所述基板远离所述吸光层的一侧形成第一金属层。\n\n[0062]其中，第一金属层可以由Mo或Mo/Cu的叠层金属形成。第一金属层可以通过物理气相沉积的方式形成。\n\n[0063]步骤B30：在所述第一金属层远离所述基板的一侧形成第二金属层，对所述第二金属层图案化以形成栅极、源极、漏极和绑定部，所述绑定部与所述第一金属层连接。\n\n[0064]其中，第二金属层可以由IZO/Mo/Cu的三层金属结构或MoOX/Cu双层金属结构形成。其中，在IZO/Mo/Cu的三层金属结构中，IZO作为低反射功能层。Cu作为电极层。通过将Mo设置在IZO与Cu之间，可以提高IZO与Cu的贴合性。IZO的厚度为15纳米至30纳米。具体的，IZO的厚度为15纳米、20纳米、25纳米或30纳米。在MoOX/Cu双层金属结构中，MoOX作为低反射功能层。Cu作为电极层。MoOX的厚度为20纳米至30纳米。具体的，MoOX的厚度为20纳米、25纳米或30纳米。\n\n[0065]本申请通过在基板一侧设置吸光层，提高了阵列基板的光稳定性。此外，本申请还通过在同一制程中制备栅极、源极、漏极以及绑定部，简化了阵列基板的制备工艺。本申请还通过采用具有低反射功能层的材料制备栅极、源极、漏极以及绑定部，减少了外界环境光的散射，从而减少外界环境光对阵列基板的影响。\n\n[0066]请参阅图5和6a-6l，图5为本申请提供的阵列基板的制备方法的第二种实施例的流程图。图6a-6l为本申请提供的阵列基板的制备方法的第二种实施例的示意图。\n\n[0067]本申请还提供一种阵列基板的制备方法，包括：\n\n[0068]步骤B10：在基板的一侧形成吸光层。\n\n[0069]如图6a所示，在基板101的一侧形成吸光层102。基板101可以是玻璃基板或柔性基板。吸光层102可以为2,8-二氟-5,11-双(三乙基硅烷基乙炔基)双噻吩蒽、6,12-二(三乙基硅乙炔基)二苯并苯并二噻吩或2,7-二癸基二苯并二噻吩中的一种或多种。\n\n[0070]步骤B40：在吸光层远离基板的一侧形成第一缓冲层；或在基板远离吸光层的一侧形成第一缓冲层。\n\n[0071]如图6b-6c所示，在吸光层102远离基板101的一侧形成第一缓冲层105；或在基板101远离吸光层102的一侧形成第一缓冲层105。第一缓冲层105可以由SiOX或SiOX/SiNX的叠层形成。第一缓冲层105可以采用化学气相沉积的方式形成。\n\n[0072]步骤B50：在吸光层远离基板的一侧形成第一金属层，或在基板远离吸光层的一侧形成第一金属层,对第一金属层图案化以形成遮光部、连接部和第一极板。\n\n[0073]如图6d所示，在吸光层102远离基板101的一侧形成第一金属层103，或在基板101远离吸光层102的一侧形成第一金属层103。可以采用双氧水系蚀刻液对第一金属层103图案化以形成遮光部1031、连接部1032和第一极板1033。第一金属层103可以由Mo或Mo/Cu的叠层金属形成。第一金属层103可以通过物理气相沉积的方式形成。\n\n[0074]步骤B60：形成覆盖第一金属层的第二缓冲层。\n\n[0075]如图6e所示，形成覆盖第一金属层103的第二缓冲层106。第二缓冲层106可以由SiOX或SiOX/SiNX的叠层形成。第二缓冲层106可以采用化学气相沉积的方式形成。\n\n[0076]步骤B70：在第二缓冲层远离第一金属层的一侧形成半导体层。\n\n[0077]如图6e所示，在第二缓冲层106远离第一金属层103的一侧形成半导体层107。在第二缓冲层106远离第一金属层103的一侧形成半导体层107之前需要高温退火处理2-3小时，退火温度为300摄氏度至400摄氏度。具体的，退火温度可以为300摄氏度、350摄氏度或400摄氏度。具体的，退火时间可以为2小时、2.3小时或3小时。半导体层107可以由IGZO、IGZTO或IGTO中的一种或多种形成。对半导体层107图案化以形成有源部1071和第三极板1072。其中，有源部1071与遮光部1031对应设置。遮光部1031在基板101上的正投影覆盖有源部1071在基板101上的正投影。\n\n[0078]步骤B80：在半导体层远离第二缓冲层的一侧形成栅极绝缘层。\n\n[0079]如图6f所示，在半导体层107远离第二缓冲层106的一侧形成栅极绝缘层108。栅极绝缘层108可以由SiOX或SiOX/SiNX的叠层形成。\n\n[0080]步骤B90：在第二缓冲层和栅极绝缘层中形成第一开孔、第二开孔、第三开孔和第四开孔，第一开孔和第二开孔暴露出第一金属层，第三开孔和第四开孔暴露出半导体层形成沟道区和非沟道区。\n\n[0081]如图6g所示，在第二缓冲层106和栅极绝缘层108中形成第一开孔1081、第二开孔1082、第三开孔1083和第四开孔1084。第一开孔1081和第二开孔1082暴露出第一金属层103，第三开孔1083和第四开孔1084暴露出半导体层107形成沟道区和非沟道区。其中，采用等离子处理第三开孔1083和第四开孔1084。将有源部1071形成薄膜晶体管的沟道区和非沟道区。其中，有源部1071被导体化的区域为薄膜晶体管的非沟道区。\n\n[0082]步骤B100：在第一金属层远离基板的一侧形成第二金属层，对第二金属层图案化以形成栅极、源极、漏极、绑定部和第二极板，绑定部与连接部连接，第二极板与第一极板对应设置。\n\n[0083]如图6h所示，在第一金属层103远离基板101的一侧形成第二金属层104。对第二金属层104图案化以形成栅极1041、源极1042、漏极1043、绑定部1044和第二极板1045。绑定部1044与连接部1032接。第二极板1045与第一极板1033对应设置。第二金属层104可以由IZO/Mo/Cu的三层金属结构或MoOX/Cu双层金属结构形成。其中，在IZO/Mo/Cu的三层金属结构中，IZO作为低反射功能层。Cu作为电极层。通过将Mo设置在IZO与Cu之间，可以提高IZO与Cu的贴合性。IZO的厚度为15纳米至30纳米。具体的，IZO的厚度为15纳米、20纳米、25纳米或30纳米。在MoOX/Cu双层金属结构中，MoOX作为低反射功能层。Cu作为电极层。MoOX的厚度为20纳米至30纳米。具体的，MoOX的厚度为20纳米、25纳米或30纳米。\n\n[0084]步骤B110：形成覆盖第二金属层的第一钝化层，对第一钝化层图案化以形成第一开口和第二开口，第一开口与第一开孔对应设置，第一开口暴露出绑定部，第二开口暴露出源极。\n\n[0085]如图6i所示，形成覆盖第二金属层104的第一钝化层109，对第一钝化层109图案化以形成第一开口1091和第二开口1092。第一钝化层109可以由SiOX或SiOX/SiNX的叠层形成。第一钝化层109可以通过化学气相沉积的方式形成。\n\n[0086]步骤B120：在第一开口内形成保护层。\n\n[0087]如图6j所示，在第一开口1091内形成保护层110。保护层110覆盖绑定部1044。保护层110以由ITO或IZO形成。保护层110可以通过物理气相沉积的方式形成。保护层110的厚度为50纳米至100纳米。具体的保护层110的厚度为50纳米、60纳米、70纳米、80纳米、90纳米或100纳米。\n\n[0088]步骤B130：在第一钝化层远离第二金属层的一侧形成第二钝化层。\n\n[0089]如图6k所示，在第一钝化层109远离第二金属层104的一侧形成第二钝化层112。第二钝化层112可以由SiOX或SiOX/SiNX的叠层形成。第二钝化层112可以通过化学气相沉积的形成。\n\n[0090]步骤B140：在第二钝化层远离第一钝化层的一侧形成黑色矩阵。\n\n[0091]如图6l所示，在第二钝化层112远离第一钝化层109的一侧形成黑色矩阵113。黑色矩阵113可以由高遮光的光阻材料形成。黑色矩阵113可以作为薄膜晶体管沟道区的遮光层，防止外界环境光进入到薄膜晶体管的沟道区，影响薄膜晶体管的稳定性。\n\n[0092]步骤B150：在第二开口内形成发光二极管。\n\n[0093]如图2所示，在第二开口1092内形成发光二极管111。发光二极管111可以是MiniLED或MicroLED中的一种。\n\n[0094]在一些实施例中，在第二开口1092内形成发光二极管111之前还可以包括锡膏印刷和ACF胶贴合。\n\n[0095]本申请通过在基板一侧设置吸光层，提高了阵列基板的光稳定性。此外，本申请还通过在同一制程中制备栅极、源极、漏极以及绑定部，简化了阵列基板的制备工艺。通过采用具有低反射功能层的材料制备栅极、源极、漏极以及绑定部，减少了外界环境光的散射，从而减少外界环境光对阵列基板的影响。\n\n[0096]综上所述，虽然本申请实施例的详细介绍如上，但上述实施例并非用以限制本申请，本领域的普通技术人员应当理解：其依然可以对前述实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10972, 24026, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种驱动电路、微发光二极管封装芯片及微发光二极管灯板。\n\n背景技术\n\n[0002]随着车载显示技术的发展，mini LED(mini Light Emitting Diode，微发光二极管)显示技术在车载显示领域的应用趋势越来越明显。mini LED显示模组将显示区域分割成多个小区域，可实现单个小区域的亮暗调控，媲美OLED(Organic Light EmittingDiode，有机发光二极管)显示技术出色的显示效果，且mini LED的成本相对较低，因此被越来越多的车企认可。\n\n[0003]现有的mini LED显示设计通常采用一个分区一颗LED灯或一个分区多颗LED灯的方案。其中，Mini LED背光有多个分区，单个分区可单独点亮或关闭。当采用一个分区一颗LED灯的方案时，可减少LED的SMT(Surface Mount Technology，表面组装技术)工艺打件(即把LED芯片焊接组装到电路板上)的次数，降低了SMT工艺的成本，但如果这颗LED灯出现损坏导致死灯时，则会导致整个分区不亮，严重影响显示效果。当采用一个分区多颗LED灯的方案时，增加串/并联，当一颗LED灯损坏发生死灯时，只会导致一串灯不亮，但同一分区的其他并联的LED灯仍然可以发光，改善了因死灯导致的分区变暗的问题，但一个分区多颗LED灯同时增加了打件次数，增加了SMT工艺的成本。故，有必要改善这一缺陷。\n\n发明内容\n\n[0004]本发明实施例提供一种驱动电路，用于解决现有技术的微发光二极管灯板若采用一个分区设置一颗LED灯的方案，存在当一颗LED灯死灯时，整个分区不亮，严重影响显示效果的技术问题；若采用一个分区设置多颗串/并联的LED灯时，存在打件次数较多，导致SMT工艺的成本过高的技术问题。\n\n[0005]本发明实施例提供一种驱动电路，用于驱动微发光二极管封装芯片，包括N个第一线路、N个第二线路、N个第三线路以及N个第四线路，N为大于1的正整数，N个所述第二线路与N个所述第一线路交替设置，N个所述第三线路与N个所述第一线路一一对应设置，任一所述第四线路位于一个所述第一线路和对应的一个所述第三线路之间且包括(N-1)个第四子线路；所述第一线路包括一个与电源正极电性连接的第一焊盘；所述第二线路包括与所述电源正极电性连接且串联的N个第二焊盘；所述第三线路包括与电源负极电性连接且串联的N个第三焊盘，相邻的一个所述第三焊盘和一个所述第二焊盘位于同一行；所述第四子线路包括串联的一个第四焊盘和一个第五焊盘。\n\n[0006]在本发明实施例提供的驱动电路中，N等于2。\n\n[0007]在本发明实施例提供的驱动电路中，N大于2，且所述第四子线路间隔设置。\n\n[0008]本发明实施例提供一种微发光二极管封装芯片，包括沿N行、N列排布的N*N颗微发光二极管，N为大于1的正整数；其中，N*N颗所述微发光二极管的正极和负极的排布方向相同。\n\n[0009]本发明实施例还提供一种微发光二极管灯板，包括基板，所述基板包括多个发光区，任一所述发光区内设置有上述的驱动电路以及与所述驱动电路电性连接的上述的微发光二极管封装芯片。\n\n[0010]在本发明实施例提供的微发光二极管灯板中，N等于2，位于第一行的所述微发光二极管的正极与所述第一焊盘电性连接，位于第一行的所述微发光二极管的负极与所述第四焊盘电性连接，位于第二行的所述微发光二极管的正极与所述第五焊盘电性连接，位于第二行的所述微发光二极管的负极与所述第三焊盘电性连接。\n\n[0011]在本发明实施例提供的微发光二极管灯板中，N大于2，且所述第四子线路间隔设置。\n\n[0012]在本发明实施例提供的微发光二极管灯板中，位于第一行的所述微发光二极管的正极与所述第一焊盘电性连接，位于第一行至第(N-1)行的所述微发光二极管的负极与所述第四焊盘电性连接，位于第二行至第N行的所述微发光二极管的正极与所述第五焊盘电性连接，位于第N行的所述微发光二极管的负极与所述第三焊盘电性连接。\n\n[0013]在本发明实施例提供的微发光二极管灯板中，任一所述微发光二极管的正极与所述第二焊盘电性连接，任一所述微发光二极管的负极与所述第三焊盘电性连接。\n\n[0014]在本发明实施例提供的微发光二极管灯板中，任一所述发光区还设置有反射罩，所述反射罩位于所述微发光二极管封装芯片的四周。\n\n[0015]有益效果：本发明实施例提供的一种驱动电路，用于驱动微发光二极管封装芯片，包括N个第一线路、N个第二线路、N个第三线路以及N个第四线路，N为大于1的正整数，N个第二线路与N个第一线路交替设置，N个第三线路与N个第一线路一一对应设置，任一第四线路位于一个第一线路和对应的一个第三线路之间且包括(N-1)个第四子线路；第一线路包括一个与电源正极电性连接的第一焊盘；第二线路包括与电源正极电性连接且串联的N个第二焊盘；第三线路包括与电源负极电性连接且串联的N个第三焊盘，相邻的一个第三焊盘和一个第二焊盘位于同一行；第四子线路包括串联的一个第四焊盘和一个第五焊盘。本发明提供的驱动电路，用于驱动具有N*N颗微发光二极管的微发光二极管封装芯片，原本需要SMT打件N*N次，现只需打件一次即可，可以降低工艺成本，采用本发明提供的驱动电路可实现N并N串或N*N并1串的连接方式，并联的增多可以改善因死灯造成分区变暗的问题，通过改变SMT打件的方向，还可在不修改电路和微发光二极管的排布方式的情况下，在N并N串和N*N并1串的连接方式之间切换，面对不同的驱动需求可以有更多的选择，增加了产品竞争力。\n\n附图说明\n\n[0016]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。\n\n[0017]图1是本发明实施例提供的驱动电路的示意图。\n\n[0018]图2是本发明实施例提供的微发光二极管封装芯片的基本结构示意图。\n\n[0019]图3是本发明实施例提供的微发光二极管灯板的基本结构示意图。\n\n[0020]图4是本发明实施例提供的微发光二极管封装芯片与驱动电路电性连接的示意图。\n\n[0021]图5是本发明实施例提供的另一微发光二极管封装芯片与驱动电路电性连接的示意图。\n\n具体实施方式\n\n[0022]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。在附图中，为了清晰及便于理解和描述，附图中绘示的组件的尺寸和厚度并未按照比例。\n\n[0023]本发明实施例提供一种驱动电路，所述驱动电路用于驱动微发光二极管封装芯片，包括N个第一线路、N个第二线路、N个第三线路以及N个第四线路，N为大于1的正整数，N个所述第二线路与N个所述第一线路交替设置，N个所述第三线路与N个所述第一线路一一对应设置，任一所述第四线路位于一个所述第一线路和对应的一个所述第三线路之间且包括(N-1)个第四子线路；所述第一线路包括一个与电源正极电性连接的第一焊盘；所述第二线路包括与所述电源正极电性连接且串联的N个第二焊盘；所述第三线路包括与电源负极电性连接且串联的N个第三焊盘，相邻的一个所述第三焊盘和一个所述第二焊盘位于同一行；所述第四子线路包括串联的一个第四焊盘和一个第五焊盘。\n\n[0024]需要说明的是，本发明提供的驱动电路用于驱动具有N*N颗微发光二极管的微发光二极管封装芯片，原本需要SMT打件N*N次，现只需打件一次即可，可以降低工艺成本，采用本发明提供的驱动电路可实现N并N串或N*N并1串的连接方式，并联的增多可以改善因死灯造成分区变暗的问题，通过改变SMT打件的方向，还可在不修改电路和微发光二极管的排布方式的情况下，在N并N串和N*N并1串的连接方式之间切换，面对不同的驱动需求可以有更多的选择，减少了因更改电路串并联而重新设计和开模电路板增加的成本，增加了产品竞争力。\n\n[0025]在一种实施例中，N等于2。如图1所示，为本发明实施例提供的驱动电路的示意图，所述驱动电路12用于驱动微发光二极管封装芯片100(如图2)，包括2个第一线路121、2个第二线路122、2个第三线路123以及2个第四线路124，2个所述第二线路122与2个所述第一线路121交替设置，2个所述第三线路123与2个所述第一线路121一一对应设置，任一所述第四线路124位于一个所述第一线路121和对应的一个所述第三线路123之间且包括1个第四子线路1241；所述第一线路121包括一个与电源正极“+”电性连接的第一焊盘1201；所述第二线路122包括与所述电源正极“+”电性连接且串联的2个第二焊盘1202；所述第三线路123包括与电源负极“-”电性连接且串联的2个第三焊盘1203，相邻的一个所述第三焊盘1203和一个所述第二焊盘1202位于同一行；所述第四子线路1241包括串联的一个第四焊盘1204和一个第五焊盘1205。其中，电源正极“+”表示电流流入方向，电源负极“-”表示电流流出方向。\n\n[0026]在一种实施例中，N大于2，且所述第四子线路1241间隔设置。可以理解的是，当N大于2时，所述第四子线路1241的数量大于或等于2，本发明通过使多个第四子线路1241间隔设置，可使得设置在所述第四线路124上的任一微发光二极管的正极与其负极之间断开，避免微发光二极管的正极与负极短接而损坏。\n\n[0027]接下来，请参阅图2，为本发明实施例提供的微发光二极管封装芯片的基本结构示意图，所述微发光二极管封装芯片100包括沿N行、N列排布的N*N颗微发光二极管101，N为大于1的正整数(图2中以N等于2为例进行说明)；其中，N*N颗所述微发光二极管101的正极(+)和负极(-)的排布方向相同。\n\n[0028]需要说明的是，N*N颗所述微发光二极管101的正极(+)和负极(-)的排布方向相同指的是：任一所述微发光二极管101的正极(+)朝上、负极(-)朝下(如图2)，或者正极(+)朝下、负极(-)朝上，或者正极(+)朝左、负极(-)朝右，或者正极(+)朝右、负极(-)朝左。\n\n[0029]需要说明的是，现有技术若要绑定N*N颗微发光二极管，需要打件N*N次，导致SMT打件工艺的成本过高。本发明通过将N*N颗微发光二极管101封装在一个微发光二极管封装芯片100中，只需打件一次即可，减少了SMT打件的次数，降低了工艺成本。\n\n[0030]需要说明的是，本发明提供的微发光二极管封装芯片100按照不同的连接方式可实现N并N串或N*N并1串的连接电路，与一个分区一颗LED的方案相比，并联的增多可避免因死灯造成分区变暗的情况发生，当其中某一串LED灯损坏死灯时，还有(N-1)串或(N*N-1)串LED灯亮，削弱了对显示效果的影响。\n\n[0031]接下来，请参阅图3，为本发明实施例提供的微发光二极管灯板的基本结构示意图，所述微发光二极管灯板10包括基板11，所述基板11包括多个发光区A1，任一所述发光区A1内设置有驱动电路(未图示)以及与所述驱动电路电性连接的微发光二极管封装芯片100。\n\n[0032]其中，所述驱动电路用于驱动所述微发光二极管封装芯片100，包括N个第一线路、N个第二线路、N个第三线路以及N个第四线路，N为大于1的正整数，N个所述第二线路与N个所述第一线路交替设置，N个所述第三线路与N个所述第一线路一一对应设置，任一所述第四线路位于一个所述第一线路和对应的一个所述第三线路之间且包括(N-1)个第四子线路；所述第一线路包括一个与电源正极电性连接的第一焊盘；所述第二线路包括与所述电源正极电性连接且串联的N个第二焊盘；所述第三线路包括与电源负极电性连接且串联的N个第三焊盘，相邻的一个所述第三焊盘和一个所述第二焊盘位于同一行；所述第四子线路包括串联的一个第四焊盘和一个第五焊盘。\n\n[0033]其中，所述微发光二极管封装芯片100包括沿N行、N列排布的N*N颗微发光二极管，N为大于1的正整数；其中，N*N颗所述微发光二极管的正极和负极的排布方向相同。\n\n[0034]在一种实施例中，N等于2。如图4所示，为本发明实施例提供的微发光二极管封装芯片与驱动电路电性连接的示意图，其中，位于第一行的所述微发光二极管101的正极(+)与所述第一焊盘1201电性连接，位于第一行的所述微发光二极管101的负极(-)与所述第四焊盘1204电性连接，位于第二行的所述微发光二极管101的正极(+)与所述第五焊盘1205电性连接，位于第二行的所述微发光二极管101的负极(-)与所述第三焊盘1203电性连接。\n\n[0035]从图4中可以很明显的看出，第一列的2个所述微发光二极管101串联，第二列的2个所述微发光二极管101串联，且第一列的2个所述微发光二极管101与第二列的2个所述微发光二极管101并联，即形成了2并2串的连接电路。按照上述的连接方式进行打件，当其中某一列的微发光二极管101死灯时，电流可从另一列流出，另一列的微发光二极管101还可以点亮，因此，避免了因死灯造成某一发光区A1变暗的情况发生。\n\n[0036]在一种实施例中，N大于2，且所述第四子线路间隔设置。其中，位于第一行的所述微发光二极管的正极与所述第一焊盘电性连接，位于第一行至第(N-1)行的所述微发光二极管的负极与所述第四焊盘电性连接，位于第二行至第N行的所述微发光二极管的正极与所述第五焊盘电性连接，位于第N行的所述微发光二极管的负极与所述第三焊盘电性连接。按照上述的连接方式进行打件，可实现N并N串的连接电路，当其中某一串的微发光二极管死灯时，电流可从另(N-1)串流出，另(N-1)串的微发光二极管还可以点亮，因此，避免了因死灯造成某一发光区A1变暗的情况发生。\n\n[0037]在一种实施例中，任一所述微发光二极管的正极与所述第二焊盘电性连接，任一所述微发光二极管的负极与所述第三焊盘电性连接。按照上述的连接方式进行打件，可实现N*N并1串的连接电路，当其中某一串的微发光二极管死灯时，电流可从另(N*N-1)串流出，另(N*N-1)串的微发光二极管还可以点亮，因此，避免了因死灯造成某一发光区A1变暗的情况发生。具体的，以N等于2为例，如图5所示，为本发明实施例提供的另一微发光二极管封装芯片与驱动电路电性连接的示意图，任一所述微发光二极管101的正极(+)与所述第二焊盘1202电性连接，任一所述微发光二极管101的负极(-)与所述第三焊盘1203电性连接。\n\n[0038]从图5中可以很明显的看出，第一列的2个所述微发光二极管101并联，第二列的2个所述微发光二极管101并联，且第一列的2个所述微发光二极管101与第二列的2个所述微发光二极管101并联，即形成了4并1串的连接电路。按照上述的连接方式进行打件，当其中某一串的微发光二极管101死灯时，电流可从另3串流出，另3串的微发光二极管101还可以点亮，因此，避免了因死灯造成某一发光区A1变暗的情况发生。而且，本实施例的打件方式与图4的打件方式相比，仅仅是将图4的微发光二极管封装芯片顺时针旋转90度，即可将2并2串的连接电路切换为4并1串的连接电路，不需要重新设计电路，也不需要更改微发光二极管封装芯片中的微发光二极管的排布方式，不仅增加了驱动方式，还不会增加成本。\n\n[0039]继续参阅图3，在一种实施例中，任一所述发光区A1还设置有反射罩13，所述反射罩13位于所述微发光二极管封装芯片100的四周。具体的，所述反射罩13包括四片沿所述微发光二极管封装芯片100的出射光发散方向设置的等腰梯形，用于反射所述出射光以提升所述微发光二极管封装芯片100正面的亮度。\n\n[0040]需要说明的是，本发明实施例提供的微发光二极管灯板10可用于车载领域，例如汽车车灯，还可用于其他具备显示或照明功能的部件或装置。\n\n[0041]综上所述，本发明实施例提供的一种驱动电路，用于驱动微发光二极管封装芯片，包括N个第一线路、N个第二线路、N个第三线路以及N个第四线路，N为大于1的正整数，N个第二线路与N个第一线路交替设置，N个第三线路与N个第一线路一一对应设置，任一第四线路位于一个第一线路和对应的一个第三线路之间且包括(N-1)个第四子线路；第一线路包括一个与电源正极电性连接的第一焊盘；第二线路包括与电源正极电性连接且串联的N个第二焊盘；第三线路包括与电源负极电性连接且串联的N个第三焊盘，相邻的一个第三焊盘和一个第二焊盘位于同一行；第四子线路包括串联的一个第四焊盘和一个第五焊盘。本发明提供的驱动电路，用于驱动具有N*N颗微发光二极管的微发光二极管封装芯片，原本需要SMT打件N*N次，现只需打件一次即可，可以降低工艺成本，采用本发明提供的驱动电路可实现N并N串或N*N并1串的连接方式，并联的增多可以改善因死灯造成分区变暗的问题，通过改变SMT打件的方向，还可在不修改电路和微发光二极管的排布方式的情况下，在N并N串和N*N并1串的连接方式之间切换，面对不同的驱动需求可以有更多的选择，增加了产品竞争力，解决了现有技术的微发光二极管灯板若采用一个分区设置一颗LED灯的方案，存在当一颗LED灯死灯时，整个分区不亮，严重影响显示效果的技术问题；若采用一个分区设置多颗串/并联的LED灯时，存在打件次数较多，导致SMT工艺的成本过高的技术问题。\n\n[0042]以上对本发明实施例所提供的一种驱动电路、微发光二极管封装芯片及微发光二极管灯板进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种驱动电路、微发光二极管封装芯片及微发光二极管灯板。\n\n背景技术\n\n[0002]随着车载显示技术的发展，mini LED(mini Light Emitting Diode，微发光二极管)显示技术在车载显示领域的应用趋势越来越明显。mini LED显示模组将显示区域分割成多个小区域，可实现单个小区域的亮暗调控，媲美OLED(Organic Light EmittingDiode，有机发光二极管)显示技术出色的显示效果，且mini LED的成本相对较低，因此被越来越多的车企认可。\n\n[0003]现有的mini LED显示设计通常采用一个分区一颗LED灯或一个分区多颗LED灯的方案。其中，Mini LED背光有多个分区，单个分区可单独点亮或关闭。当采用一个分区一颗LED灯的方案时，可减少LED的SMT(Surface Mount Technology，表面组装技术)工艺打件(即把LED芯片焊接组装到电路板上)的次数，降低了SMT工艺的成本，但如果这颗LED灯出现损坏导致死灯时，则会导致整个分区不亮，严重影响显示效果。当采用一个分区多颗LED灯的方案时，增加串/并联，当一颗LED灯损坏发生死灯时，只会导致一串灯不亮，但同一分区的其他并联的LED灯仍然可以发光，改善了因死灯导致的分区变暗的问题，但一个分区多颗LED灯同时增加了打件次数，增加了SMT工艺的成本。故，有必要改善这一缺陷。\n\n发明内容\n\n[0004]本发明实施例提供一种驱动电路，用于解决现有技术的微发光二极管灯板若采用一个分区设置一颗LED灯的方案，存在当一颗LED灯死灯时，整个分区不亮，严重影响显示效果的技术问题；若采用一个分区设置多颗串/并联的LED灯时，存在打件次数较多，导致SMT工艺的成本过高的技术问题。\n\n[0005]本发明实施例提供一种驱动电路，用于驱动微发光二极管封装芯片，包括N个第一线路、N个第二线路、N个第三线路以及N个第四线路，N为大于1的正整数，N个所述第二线路与N个所述第一线路交替设置，N个所述第三线路与N个所述第一线路一一对应设置，任一所述第四线路位于一个所述第一线路和对应的一个所述第三线路之间且包括(N-1)个第四子线路；所述第一线路包括一个与电源正极电性连接的第一焊盘；所述第二线路包括与所述电源正极电性连接且串联的N个第二焊盘；所述第三线路包括与电源负极电性连接且串联的N个第三焊盘，相邻的一个所述第三焊盘和一个所述第二焊盘位于同一行；所述第四子线路包括串联的一个第四焊盘和一个第五焊盘。\n\n[0006]在本发明实施例提供的驱动电路中，N等于2。\n\n[0007]在本发明实施例提供的驱动电路中，N大于2，且所述第四子线路间隔设置。\n\n[0008]本发明实施例提供一种微发光二极管封装芯片，包括沿N行、N列排布的N*N颗微发光二极管，N为大于1的正整数；其中，N*N颗所述微发光二极管的正极和负极的排布方向相同。\n\n[0009]本发明实施例还提供一种微发光二极管灯板，包括基板，所述基板包括多个发光区，任一所述发光区内设置有上述的驱动电路以及与所述驱动电路电性连接的上述的微发光二极管封装芯片。\n\n[0010]在本发明实施例提供的微发光二极管灯板中，N等于2，位于第一行的所述微发光二极管的正极与所述第一焊盘电性连接，位于第一行的所述微发光二极管的负极与所述第四焊盘电性连接，位于第二行的所述微发光二极管的正极与所述第五焊盘电性连接，位于第二行的所述微发光二极管的负极与所述第三焊盘电性连接。\n\n[0011]在本发明实施例提供的微发光二极管灯板中，N大于2，且所述第四子线路间隔设置。\n\n[0012]在本发明实施例提供的微发光二极管灯板中，位于第一行的所述微发光二极管的正极与所述第一焊盘电性连接，位于第一行至第(N-1)行的所述微发光二极管的负极与所述第四焊盘电性连接，位于第二行至第N行的所述微发光二极管的正极与所述第五焊盘电性连接，位于第N行的所述微发光二极管的负极与所述第三焊盘电性连接。\n\n[0013]在本发明实施例提供的微发光二极管灯板中，任一所述微发光二极管的正极与所述第二焊盘电性连接，任一所述微发光二极管的负极与所述第三焊盘电性连接。\n\n[0014]在本发明实施例提供的微发光二极管灯板中，任一所述发光区还设置有反射罩，所述反射罩位于所述微发光二极管封装芯片的四周。\n\n[0015]有益效果：本发明实施例提供的一种驱动电路，用于驱动微发光二极管封装芯片，包括N个第一线路、N个第二线路、N个第三线路以及N个第四线路，N为大于1的正整数，N个第二线路与N个第一线路交替设置，N个第三线路与N个第一线路一一对应设置，任一第四线路位于一个第一线路和对应的一个第三线路之间且包括(N-1)个第四子线路；第一线路包括一个与电源正极电性连接的第一焊盘；第二线路包括与电源正极电性连接且串联的N个第二焊盘；第三线路包括与电源负极电性连接且串联的N个第三焊盘，相邻的一个第三焊盘和一个第二焊盘位于同一行；第四子线路包括串联的一个第四焊盘和一个第五焊盘。本发明提供的驱动电路，用于驱动具有N*N颗微发光二极管的微发光二极管封装芯片，原本需要SMT打件N*N次，现只需打件一次即可，可以降低工艺成本，采用本发明提供的驱动电路可实现N并N串或N*N并1串的连接方式，并联的增多可以改善因死灯造成分区变暗的问题，通过改变SMT打件的方向，还可在不修改电路和微发光二极管的排布方式的情况下，在N并N串和N*N并1串的连接方式之间切换，面对不同的驱动需求可以有更多的选择，增加了产品竞争力。\n\n附图说明\n\n[0016]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。\n\n[0017]图1是本发明实施例提供的驱动电路的示意图。\n\n[0018]图2是本发明实施例提供的微发光二极管封装芯片的基本结构示意图。\n\n[0019]图3是本发明实施例提供的微发光二极管灯板的基本结构示意图。\n\n[0020]图4是本发明实施例提供的微发光二极管封装芯片与驱动电路电性连接的示意图。\n\n[0021]图5是本发明实施例提供的另一微发光二极管封装芯片与驱动电路电性连接的示意图。\n\n具体实施方式\n\n[0022]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。在附图中，为了清晰及便于理解和描述，附图中绘示的组件的尺寸和厚度并未按照比例。\n\n[0023]本发明实施例提供一种驱动电路，所述驱动电路用于驱动微发光二极管封装芯片，包括N个第一线路、N个第二线路、N个第三线路以及N个第四线路，N为大于1的正整数，N个所述第二线路与N个所述第一线路交替设置，N个所述第三线路与N个所述第一线路一一对应设置，任一所述第四线路位于一个所述第一线路和对应的一个所述第三线路之间且包括(N-1)个第四子线路；所述第一线路包括一个与电源正极电性连接的第一焊盘；所述第二线路包括与所述电源正极电性连接且串联的N个第二焊盘；所述第三线路包括与电源负极电性连接且串联的N个第三焊盘，相邻的一个所述第三焊盘和一个所述第二焊盘位于同一行；所述第四子线路包括串联的一个第四焊盘和一个第五焊盘。\n\n[0024]需要说明的是，本发明提供的驱动电路用于驱动具有N*N颗微发光二极管的微发光二极管封装芯片，原本需要SMT打件N*N次，现只需打件一次即可，可以降低工艺成本，采用本发明提供的驱动电路可实现N并N串或N*N并1串的连接方式，并联的增多可以改善因死灯造成分区变暗的问题，通过改变SMT打件的方向，还可在不修改电路和微发光二极管的排布方式的情况下，在N并N串和N*N并1串的连接方式之间切换，面对不同的驱动需求可以有更多的选择，减少了因更改电路串并联而重新设计和开模电路板增加的成本，增加了产品竞争力。\n\n[0025]在一种实施例中，N等于2。如图1所示，为本发明实施例提供的驱动电路的示意图，所述驱动电路12用于驱动微发光二极管封装芯片100(如图2)，包括2个第一线路121、2个第二线路122、2个第三线路123以及2个第四线路124，2个所述第二线路122与2个所述第一线路121交替设置，2个所述第三线路123与2个所述第一线路121一一对应设置，任一所述第四线路124位于一个所述第一线路121和对应的一个所述第三线路123之间且包括1个第四子线路1241；所述第一线路121包括一个与电源正极“+”电性连接的第一焊盘1201；所述第二线路122包括与所述电源正极“+”电性连接且串联的2个第二焊盘1202；所述第三线路123包括与电源负极“-”电性连接且串联的2个第三焊盘1203，相邻的一个所述第三焊盘1203和一个所述第二焊盘1202位于同一行；所述第四子线路1241包括串联的一个第四焊盘1204和一个第五焊盘1205。其中，电源正极“+”表示电流流入方向，电源负极“-”表示电流流出方向。\n\n[0026]在一种实施例中，N大于2，且所述第四子线路1241间隔设置。可以理解的是，当N大于2时，所述第四子线路1241的数量大于或等于2，本发明通过使多个第四子线路1241间隔设置，可使得设置在所述第四线路124上的任一微发光二极管的正极与其负极之间断开，避免微发光二极管的正极与负极短接而损坏。\n\n[0027]接下来，请参阅图2，为本发明实施例提供的微发光二极管封装芯片的基本结构示意图，所述微发光二极管封装芯片100包括沿N行、N列排布的N*N颗微发光二极管101，N为大于1的正整数(图2中以N等于2为例进行说明)；其中，N*N颗所述微发光二极管101的正极(+)和负极(-)的排布方向相同。\n\n[0028]需要说明的是，N*N颗所述微发光二极管101的正极(+)和负极(-)的排布方向相同指的是：任一所述微发光二极管101的正极(+)朝上、负极(-)朝下(如图2)，或者正极(+)朝下、负极(-)朝上，或者正极(+)朝左、负极(-)朝右，或者正极(+)朝右、负极(-)朝左。\n\n[0029]需要说明的是，现有技术若要绑定N*N颗微发光二极管，需要打件N*N次，导致SMT打件工艺的成本过高。本发明通过将N*N颗微发光二极管101封装在一个微发光二极管封装芯片100中，只需打件一次即可，减少了SMT打件的次数，降低了工艺成本。\n\n[0030]需要说明的是，本发明提供的微发光二极管封装芯片100按照不同的连接方式可实现N并N串或N*N并1串的连接电路，与一个分区一颗LED的方案相比，并联的增多可避免因死灯造成分区变暗的情况发生，当其中某一串LED灯损坏死灯时，还有(N-1)串或(N*N-1)串LED灯亮，削弱了对显示效果的影响。\n\n[0031]接下来，请参阅图3，为本发明实施例提供的微发光二极管灯板的基本结构示意图，所述微发光二极管灯板10包括基板11，所述基板11包括多个发光区A1，任一所述发光区A1内设置有驱动电路(未图示)以及与所述驱动电路电性连接的微发光二极管封装芯片100。\n\n[0032]其中，所述驱动电路用于驱动所述微发光二极管封装芯片100，包括N个第一线路、N个第二线路、N个第三线路以及N个第四线路，N为大于1的正整数，N个所述第二线路与N个所述第一线路交替设置，N个所述第三线路与N个所述第一线路一一对应设置，任一所述第四线路位于一个所述第一线路和对应的一个所述第三线路之间且包括(N-1)个第四子线路；所述第一线路包括一个与电源正极电性连接的第一焊盘；所述第二线路包括与所述电源正极电性连接且串联的N个第二焊盘；所述第三线路包括与电源负极电性连接且串联的N个第三焊盘，相邻的一个所述第三焊盘和一个所述第二焊盘位于同一行；所述第四子线路包括串联的一个第四焊盘和一个第五焊盘。\n\n[0033]其中，所述微发光二极管封装芯片100包括沿N行、N列排布的N*N颗微发光二极管，N为大于1的正整数；其中，N*N颗所述微发光二极管的正极和负极的排布方向相同。\n\n[0034]在一种实施例中，N等于2。如图4所示，为本发明实施例提供的微发光二极管封装芯片与驱动电路电性连接的示意图，其中，位于第一行的所述微发光二极管101的正极(+)与所述第一焊盘1201电性连接，位于第一行的所述微发光二极管101的负极(-)与所述第四焊盘1204电性连接，位于第二行的所述微发光二极管101的正极(+)与所述第五焊盘1205电性连接，位于第二行的所述微发光二极管101的负极(-)与所述第三焊盘1203电性连接。\n\n[0035]从图4中可以很明显的看出，第一列的2个所述微发光二极管101串联，第二列的2个所述微发光二极管101串联，且第一列的2个所述微发光二极管101与第二列的2个所述微发光二极管101并联，即形成了2并2串的连接电路。按照上述的连接方式进行打件，当其中某一列的微发光二极管101死灯时，电流可从另一列流出，另一列的微发光二极管101还可以点亮，因此，避免了因死灯造成某一发光区A1变暗的情况发生。\n\n[0036]在一种实施例中，N大于2，且所述第四子线路间隔设置。其中，位于第一行的所述微发光二极管的正极与所述第一焊盘电性连接，位于第一行至第(N-1)行的所述微发光二极管的负极与所述第四焊盘电性连接，位于第二行至第N行的所述微发光二极管的正极与所述第五焊盘电性连接，位于第N行的所述微发光二极管的负极与所述第三焊盘电性连接。按照上述的连接方式进行打件，可实现N并N串的连接电路，当其中某一串的微发光二极管死灯时，电流可从另(N-1)串流出，另(N-1)串的微发光二极管还可以点亮，因此，避免了因死灯造成某一发光区A1变暗的情况发生。\n\n[0037]在一种实施例中，任一所述微发光二极管的正极与所述第二焊盘电性连接，任一所述微发光二极管的负极与所述第三焊盘电性连接。按照上述的连接方式进行打件，可实现N*N并1串的连接电路，当其中某一串的微发光二极管死灯时，电流可从另(N*N-1)串流出，另(N*N-1)串的微发光二极管还可以点亮，因此，避免了因死灯造成某一发光区A1变暗的情况发生。具体的，以N等于2为例，如图5所示，为本发明实施例提供的另一微发光二极管封装芯片与驱动电路电性连接的示意图，任一所述微发光二极管101的正极(+)与所述第二焊盘1202电性连接，任一所述微发光二极管101的负极(-)与所述第三焊盘1203电性连接。\n\n[0038]从图5中可以很明显的看出，第一列的2个所述微发光二极管101并联，第二列的2个所述微发光二极管101并联，且第一列的2个所述微发光二极管101与第二列的2个所述微发光二极管101并联，即形成了4并1串的连接电路。按照上述的连接方式进行打件，当其中某一串的微发光二极管101死灯时，电流可从另3串流出，另3串的微发光二极管101还可以点亮，因此，避免了因死灯造成某一发光区A1变暗的情况发生。而且，本实施例的打件方式与图4的打件方式相比，仅仅是将图4的微发光二极管封装芯片顺时针旋转90度，即可将2并2串的连接电路切换为4并1串的连接电路，不需要重新设计电路，也不需要更改微发光二极管封装芯片中的微发光二极管的排布方式，不仅增加了驱动方式，还不会增加成本。\n\n[0039]继续参阅图3，在一种实施例中，任一所述发光区A1还设置有反射罩13，所述反射罩13位于所述微发光二极管封装芯片100的四周。具体的，所述反射罩13包括四片沿所述微发光二极管封装芯片100的出射光发散方向设置的等腰梯形，用于反射所述出射光以提升所述微发光二极管封装芯片100正面的亮度。\n\n[0040]需要说明的是，本发明实施例提供的微发光二极管灯板10可用于车载领域，例如汽车车灯，还可用于其他具备显示或照明功能的部件或装置。\n\n[0041]综上所述，本发明实施例提供的一种驱动电路，用于驱动微发光二极管封装芯片，包括N个第一线路、N个第二线路、N个第三线路以及N个第四线路，N为大于1的正整数，N个第二线路与N个第一线路交替设置，N个第三线路与N个第一线路一一对应设置，任一第四线路位于一个第一线路和对应的一个第三线路之间且包括(N-1)个第四子线路；第一线路包括一个与电源正极电性连接的第一焊盘；第二线路包括与电源正极电性连接且串联的N个第二焊盘；第三线路包括与电源负极电性连接且串联的N个第三焊盘，相邻的一个第三焊盘和一个第二焊盘位于同一行；第四子线路包括串联的一个第四焊盘和一个第五焊盘。本发明提供的驱动电路，用于驱动具有N*N颗微发光二极管的微发光二极管封装芯片，原本需要SMT打件N*N次，现只需打件一次即可，可以降低工艺成本，采用本发明提供的驱动电路可实现N并N串或N*N并1串的连接方式，并联的增多可以改善因死灯造成分区变暗的问题，通过改变SMT打件的方向，还可在不修改电路和微发光二极管的排布方式的情况下，在N并N串和N*N并1串的连接方式之间切换，面对不同的驱动需求可以有更多的选择，增加了产品竞争力，解决了现有技术的微发光二极管灯板若采用一个分区设置一颗LED灯的方案，存在当一颗LED灯死灯时，整个分区不亮，严重影响显示效果的技术问题；若采用一个分区设置多颗串/并联的LED灯时，存在打件次数较多，导致SMT工艺的成本过高的技术问题。\n\n[0042]以上对本发明实施例所提供的一种驱动电路、微发光二极管封装芯片及微发光二极管灯板进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。');
INSERT INTO `os_patent_instruction_text` VALUES (10973, 24027, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种显示面板及显示装置。\n\n背景技术\n\n[0002]如图1所示，传统技术方案中的显示面板10通常需要在两个侧边分别设置第一列覆晶薄膜40、第二列覆晶薄膜50，第一印刷电路板20通过第一列覆晶薄膜40与显示面板10电性连接，第二印刷电路板30通过第二列覆晶薄膜50与显示面板10电性连接，如此才得以正常工作，但是这样设置需要使用大量的覆晶薄膜，对应也需要占用显示面板10大量的边框空间。\n\n[0003]需要注意的是，上述关于背景技术的介绍仅仅是为了便于清楚、完整地理解本申请的技术方案。因此，不能仅仅由于其出现在本申请的背景技术中，而认为上述所涉及到的技术方案为本领域所属技术人员所公知。\n\n发明内容\n\n[0004]本申请提供一种显示面板及显示装置，以缓解显示面板需要使用大量覆晶薄膜导致边框空间占用较大的技术问题。\n\n[0005]第一方面，本申请提供一种显示面板，其包括至少一个像素电路、至少一个第一焊盘、至少一个第二焊盘、柔性电路板以及印制电路板，像素电路包括驱动晶体管，至少一个第一焊盘与至少一个像素电路电性连接，至少一个第二焊盘与至少一个像素电路电性连接，柔性电路板的一端与至少一个第二焊盘电性连接，印制电路板与柔性电路板的另一端电性连接，印制电路板包括现场可编程门阵列，且现场可编程门阵列与至少一个像素电路电性连接。\n\n[0006]在其中一些实施方式中，显示面板还包括显示区、非显示区以及绑定区，至少一个像素电路位于显示区，非显示区包括第一非显示子区和第二非显示子区，第一非显示子区、第二非显示子区分别位于显示区的两个相对侧，且至少一个第一焊盘位于第一非显示子区和/或第二非显示子区；至少一个第二焊盘位于绑定区。\n\n[0007]在其中一些实施方式中，显示面板还包括第一走线和第二走线，第一走线与至少一个像素电路、第一焊盘中的第一部分以及柔性电路板电性连接，用于传输高电位信号；第二走线与至少一个像素电路、第一焊盘中的第二部分以及柔性电路板电性连接，用于传输高低电位信号。\n\n[0008]在其中一些实施方式中，显示面板还包括第三走线、第四走线以及第五走线，第三走线与至少一个像素电路、第一焊盘中的第三部分以及柔性电路板电性连接，用于传输扫描信号；第四走线与至少一个像素电路、第一焊盘中的第四部分以及柔性电路板电性连接，用于传输数据信号；第五走线与至少一个像素电路和柔性电路板电性连接，用于传输参考信号。\n\n[0009]在其中一些实施方式中，显示面板还包括第六走线，第六走线与至少一个像素电路和现场可编程门阵列电性连接，用于传输驱动晶体管的源极电位，以获取驱动晶体管的阈值电压。\n\n[0010]在其中一些实施方式中，至少一个像素电路呈阵列分布于显示面板，以构成多个像素行和多个像素列；其中，每个像素行包括2至8个像素电路；且每个像素列包括2至8个像素电路。\n\n[0011]在其中一些实施方式中，像素电路包括发光器件，发光器件为红色微发光二极管、绿色微发光二极管以及蓝色微发光二极管中的任一种。\n\n[0012]在其中一些实施方式中，发光器件呈阵列分布于显示面板中，其中，在每行中，发光器件的数量小于或者等于10；且在每列中，发光器件的数量小于或者等于10。\n\n[0013]在其中一些实施方式中，显示面板包括玻璃基板，至少一个像素电路、至少一个第一焊盘以及至少一个第二焊盘中的至少部分设置于玻璃基板。\n\n[0014]第二方面，本申请提供一种显示装置，其包括上述任一实施方式中的显示面板；其中，像素电路包括三个薄膜晶体管和一个电容。\n\n[0015]本申请提供的显示面板及显示装置，通过柔性电路板电性连接印制电路板与对应的第二焊盘，可以避免使用大量的覆晶薄膜，减少了边框空间，同时也可以减少信号的传输压降；且通过第一焊盘可以检测像素电路的电信号，或者传输测试信号至像素电路，如此便于实时测试或者了解像素电路的工作情况。\n\n附图说明\n\n[0016]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0017]图1为传统技术方案提供的显示面板的结构示意图。\n\n[0018]图2为本申请实施例提供的显示面板的结构示意图。\n\n具体实施方式\n\n[0019]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0020]本实施例提供了一种显示面板，其包括至少一个像素电路100、至少一个第一焊盘PAD1、至少一个第二焊盘PAD2、柔性电路板200以及印制电路板300，像素电路100包括驱动晶体管，至少一个第一焊盘PAD1与至少一个像素电路100电性连接，至少一个第二焊盘PAD2与至少一个像素电路100电性连接，柔性电路板200的一端与至少一个第二焊盘PAD2电性连接，印制电路板300与柔性电路板200的另一端电性连接，印制电路板300包括现场可编程门阵列310，且现场可编程门阵列310与至少一个像素电路100电性连接。\n\n[0021]可以理解的是，本实施例提供的显示面板，通过柔性电路板200电性连接印制电路板300与对应的第二焊盘PAD2，可以避免使用大量的覆晶薄膜，减少了边框空间，同时也可以减少信号的传输压降；且通过第一焊盘PAD1可以检测像素电路100的电信号，或者传输测试信号至像素电路100，如此便于实时测试或者了解像素电路100的工作情况。\n\n[0022]需要进行说明的是，在本实施例中，可以通过现场可编程门阵列310感测驱动晶体管的源极电位，进而实现驱动晶体管的阈值电压检测；同时，可以不受外部补偿芯片的限制。\n\n[0023]在其中一个实施例中，显示面板还包括显示区AA、非显示区NA以及绑定区NA3，至少一个像素电路100位于显示区AA，非显示区NA包括第一非显示子区NA1和第二非显示子区NA2，第一非显示子区NA1、第二非显示子区NA2分别位于显示区AA的两个相对侧，且至少一个第一焊盘PAD1位于第一非显示子区NA1和/或第二非显示子区NA2；至少一个第二焊盘PAD2位于绑定区NA3。\n\n[0024]可以理解的是，在本实施例中，设置至少一个第一焊盘PAD1位于第一非显示子区NA1和/或第二非显示子区NA2，为显示面板的后续检测与维修提供了方便。\n\n[0025]其中，非显示区NA包括第三非显示子区NA4，第三非显示子区NA4也可以设置第一焊盘PAD1。\n\n[0026]在其中一个实施例中，显示面板还包括第一走线VDD和第二走线VSS，第一走线VDD与至少一个像素电路100、第一焊盘PAD1中的第一部分以及柔性电路板200电性连接，用于传输高电位信号；第二走线VSS与至少一个像素电路100、第一焊盘PAD1中的第二部分以及柔性电路板200电性连接，用于传输高低电位信号。\n\n[0027]可以理解的是，在本实例中，采用外部电流源，通过第一走线VDD、第二走线VSS可以直接测试对应像素电路100的亮度状况，例如，是否存在坏点情况，以及具体的亮度是多少。\n\n[0028]在其中一个实施例中，显示面板还包括第三走线SL、第四走线DL以及第五走线VL，第三走线SL与至少一个像素电路100、第一焊盘PAD1中的第三部分以及柔性电路板200电性连接，用于传输扫描信号；第四走线DL与至少一个像素电路100、第一焊盘PAD1中的第四部分以及柔性电路板200电性连接，用于传输数据信号；第五走线VL与至少一个像素电路100和柔性电路板200电性连接，用于传输参考信号。\n\n[0029]可以理解的是，在本实例中，可以通过对应的第一焊盘PAD1对扫描信号、数据信号以及参考信号进行实时监测，便于了解各像素电路100的实际工况。\n\n[0030]在其中一个实施例中，显示面板还包括第六走线GL，第六走线GL与至少一个像素电路100和现场可编程门阵列310电性连接，用于传输驱动晶体管的源极电位，以获取驱动晶体管的阈值电压。\n\n[0031]在其中一个实施例中，至少一个像素电路100呈阵列分布于显示面板，以构成多个像素行和多个像素列；其中，每个像素行包括2至8个像素电路100；且每个像素列包括2至8个像素电路100。\n\n[0032]可以理解的是，在本实例中，像素电路100的行列数较少，可以提高显示面板的打件良率。\n\n[0033]在其中一个实施例中，像素电路100包括发光器件，发光器件为红色微发光二极管、绿色微发光二极管以及蓝色微发光二极管中的任一种。\n\n[0034]具体地，红色微发光二极管、绿色微发光二极管以及蓝色微发光二极管中的任一种均可以为Mini-Led。\n\n[0035]在其中一些实施方式中，发光器件呈阵列分布于显示面板中，其中，在每行中，发光器件的数量小于或者等于10；且在每列中，发光器件的数量小于或者等于10。\n\n[0036]在其中一个实施例中，显示面板包括玻璃基板，至少一个像素电路100、至少一个第一焊盘PAD1以及至少一个第二焊盘PAD2中的至少部分设置于玻璃基板。\n\n[0037]需要进行说明的是，在本实施例中，可以减小玻璃基板的使用尺寸，提高制作各薄膜晶体管的均匀性。\n\n[0038]在其中一个实施例中，本实施例提供一种显示装置，其包括上述任一实施例中的显示面板；其中，像素电路100包括三个薄膜晶体管和一个电容。\n\n[0039]在其中一个实施例中，也可以通过万用表扎第一焊盘PAD1，以判断不同信号之间在操作过程中是否发生短路。\n\n[0040]在其中一个实施例中，显示面板还包括黑油膜层，黑油膜层可以通过黑油材料形成于显示面板的显示区AA，在显示面板的亮度加持下，可以进一步提高显示面板的对比度。\n\n[0041]可以理解的是，本实施例提供的显示装置，通过柔性电路板200电性连接印制电路板300与对应的第二焊盘PAD2，可以避免使用大量的覆晶薄膜，减少了边框空间，同时也可以减少信号的传输压降；且通过第一焊盘PAD1可以检测像素电路100的电信号，或者传输测试信号至像素电路100，如此便于实时测试或者了解像素电路100的工作情况。\n\n[0042]需要进行说明的是，该三个薄膜晶体管可以但不限于为非晶硅薄膜晶体管，也可以为铟镓锌氧化物薄膜晶体管，还可以为顶栅型铟镓锌氧化物薄膜晶体管等等，可以验证不同类型器件的性能。\n\n[0043]需要进行说明的是，本申请实施例所提供的显示面板及显示装置可以应用于信号指示、计数器等；可以具有较高的显示亮度。\n\n[0044]另外，本申请实施例所提供的显示面板及显示装置也可以应用于无边框尺寸要求的其他小尺寸显示场所，如汽车仪表盘，小家电温度、状态显示等。且由于设置有第一焊盘PAD1，便于显示面板的后期检测与维修。\n\n[0045]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0046]以上对本申请实施例所提供的显示面板及显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种显示面板及显示装置。\n\n背景技术\n\n[0002]如图1所示，传统技术方案中的显示面板10通常需要在两个侧边分别设置第一列覆晶薄膜40、第二列覆晶薄膜50，第一印刷电路板20通过第一列覆晶薄膜40与显示面板10电性连接，第二印刷电路板30通过第二列覆晶薄膜50与显示面板10电性连接，如此才得以正常工作，但是这样设置需要使用大量的覆晶薄膜，对应也需要占用显示面板10大量的边框空间。\n\n[0003]需要注意的是，上述关于背景技术的介绍仅仅是为了便于清楚、完整地理解本申请的技术方案。因此，不能仅仅由于其出现在本申请的背景技术中，而认为上述所涉及到的技术方案为本领域所属技术人员所公知。\n\n发明内容\n\n[0004]本申请提供一种显示面板及显示装置，以缓解显示面板需要使用大量覆晶薄膜导致边框空间占用较大的技术问题。\n\n[0005]第一方面，本申请提供一种显示面板，其包括至少一个像素电路、至少一个第一焊盘、至少一个第二焊盘、柔性电路板以及印制电路板，像素电路包括驱动晶体管，至少一个第一焊盘与至少一个像素电路电性连接，至少一个第二焊盘与至少一个像素电路电性连接，柔性电路板的一端与至少一个第二焊盘电性连接，印制电路板与柔性电路板的另一端电性连接，印制电路板包括现场可编程门阵列，且现场可编程门阵列与至少一个像素电路电性连接。\n\n[0006]在其中一些实施方式中，显示面板还包括显示区、非显示区以及绑定区，至少一个像素电路位于显示区，非显示区包括第一非显示子区和第二非显示子区，第一非显示子区、第二非显示子区分别位于显示区的两个相对侧，且至少一个第一焊盘位于第一非显示子区和/或第二非显示子区；至少一个第二焊盘位于绑定区。\n\n[0007]在其中一些实施方式中，显示面板还包括第一走线和第二走线，第一走线与至少一个像素电路、第一焊盘中的第一部分以及柔性电路板电性连接，用于传输高电位信号；第二走线与至少一个像素电路、第一焊盘中的第二部分以及柔性电路板电性连接，用于传输高低电位信号。\n\n[0008]在其中一些实施方式中，显示面板还包括第三走线、第四走线以及第五走线，第三走线与至少一个像素电路、第一焊盘中的第三部分以及柔性电路板电性连接，用于传输扫描信号；第四走线与至少一个像素电路、第一焊盘中的第四部分以及柔性电路板电性连接，用于传输数据信号；第五走线与至少一个像素电路和柔性电路板电性连接，用于传输参考信号。\n\n[0009]在其中一些实施方式中，显示面板还包括第六走线，第六走线与至少一个像素电路和现场可编程门阵列电性连接，用于传输驱动晶体管的源极电位，以获取驱动晶体管的阈值电压。\n\n[0010]在其中一些实施方式中，至少一个像素电路呈阵列分布于显示面板，以构成多个像素行和多个像素列；其中，每个像素行包括2至8个像素电路；且每个像素列包括2至8个像素电路。\n\n[0011]在其中一些实施方式中，像素电路包括发光器件，发光器件为红色微发光二极管、绿色微发光二极管以及蓝色微发光二极管中的任一种。\n\n[0012]在其中一些实施方式中，发光器件呈阵列分布于显示面板中，其中，在每行中，发光器件的数量小于或者等于10；且在每列中，发光器件的数量小于或者等于10。\n\n[0013]在其中一些实施方式中，显示面板包括玻璃基板，至少一个像素电路、至少一个第一焊盘以及至少一个第二焊盘中的至少部分设置于玻璃基板。\n\n[0014]第二方面，本申请提供一种显示装置，其包括上述任一实施方式中的显示面板；其中，像素电路包括三个薄膜晶体管和一个电容。\n\n[0015]本申请提供的显示面板及显示装置，通过柔性电路板电性连接印制电路板与对应的第二焊盘，可以避免使用大量的覆晶薄膜，减少了边框空间，同时也可以减少信号的传输压降；且通过第一焊盘可以检测像素电路的电信号，或者传输测试信号至像素电路，如此便于实时测试或者了解像素电路的工作情况。\n\n附图说明\n\n[0016]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0017]图1为传统技术方案提供的显示面板的结构示意图。\n\n[0018]图2为本申请实施例提供的显示面板的结构示意图。\n\n具体实施方式\n\n[0019]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0020]本实施例提供了一种显示面板，其包括至少一个像素电路100、至少一个第一焊盘PAD1、至少一个第二焊盘PAD2、柔性电路板200以及印制电路板300，像素电路100包括驱动晶体管，至少一个第一焊盘PAD1与至少一个像素电路100电性连接，至少一个第二焊盘PAD2与至少一个像素电路100电性连接，柔性电路板200的一端与至少一个第二焊盘PAD2电性连接，印制电路板300与柔性电路板200的另一端电性连接，印制电路板300包括现场可编程门阵列310，且现场可编程门阵列310与至少一个像素电路100电性连接。\n\n[0021]可以理解的是，本实施例提供的显示面板，通过柔性电路板200电性连接印制电路板300与对应的第二焊盘PAD2，可以避免使用大量的覆晶薄膜，减少了边框空间，同时也可以减少信号的传输压降；且通过第一焊盘PAD1可以检测像素电路100的电信号，或者传输测试信号至像素电路100，如此便于实时测试或者了解像素电路100的工作情况。\n\n[0022]需要进行说明的是，在本实施例中，可以通过现场可编程门阵列310感测驱动晶体管的源极电位，进而实现驱动晶体管的阈值电压检测；同时，可以不受外部补偿芯片的限制。\n\n[0023]在其中一个实施例中，显示面板还包括显示区AA、非显示区NA以及绑定区NA3，至少一个像素电路100位于显示区AA，非显示区NA包括第一非显示子区NA1和第二非显示子区NA2，第一非显示子区NA1、第二非显示子区NA2分别位于显示区AA的两个相对侧，且至少一个第一焊盘PAD1位于第一非显示子区NA1和/或第二非显示子区NA2；至少一个第二焊盘PAD2位于绑定区NA3。\n\n[0024]可以理解的是，在本实施例中，设置至少一个第一焊盘PAD1位于第一非显示子区NA1和/或第二非显示子区NA2，为显示面板的后续检测与维修提供了方便。\n\n[0025]其中，非显示区NA包括第三非显示子区NA4，第三非显示子区NA4也可以设置第一焊盘PAD1。\n\n[0026]在其中一个实施例中，显示面板还包括第一走线VDD和第二走线VSS，第一走线VDD与至少一个像素电路100、第一焊盘PAD1中的第一部分以及柔性电路板200电性连接，用于传输高电位信号；第二走线VSS与至少一个像素电路100、第一焊盘PAD1中的第二部分以及柔性电路板200电性连接，用于传输高低电位信号。\n\n[0027]可以理解的是，在本实例中，采用外部电流源，通过第一走线VDD、第二走线VSS可以直接测试对应像素电路100的亮度状况，例如，是否存在坏点情况，以及具体的亮度是多少。\n\n[0028]在其中一个实施例中，显示面板还包括第三走线SL、第四走线DL以及第五走线VL，第三走线SL与至少一个像素电路100、第一焊盘PAD1中的第三部分以及柔性电路板200电性连接，用于传输扫描信号；第四走线DL与至少一个像素电路100、第一焊盘PAD1中的第四部分以及柔性电路板200电性连接，用于传输数据信号；第五走线VL与至少一个像素电路100和柔性电路板200电性连接，用于传输参考信号。\n\n[0029]可以理解的是，在本实例中，可以通过对应的第一焊盘PAD1对扫描信号、数据信号以及参考信号进行实时监测，便于了解各像素电路100的实际工况。\n\n[0030]在其中一个实施例中，显示面板还包括第六走线GL，第六走线GL与至少一个像素电路100和现场可编程门阵列310电性连接，用于传输驱动晶体管的源极电位，以获取驱动晶体管的阈值电压。\n\n[0031]在其中一个实施例中，至少一个像素电路100呈阵列分布于显示面板，以构成多个像素行和多个像素列；其中，每个像素行包括2至8个像素电路100；且每个像素列包括2至8个像素电路100。\n\n[0032]可以理解的是，在本实例中，像素电路100的行列数较少，可以提高显示面板的打件良率。\n\n[0033]在其中一个实施例中，像素电路100包括发光器件，发光器件为红色微发光二极管、绿色微发光二极管以及蓝色微发光二极管中的任一种。\n\n[0034]具体地，红色微发光二极管、绿色微发光二极管以及蓝色微发光二极管中的任一种均可以为Mini-Led。\n\n[0035]在其中一些实施方式中，发光器件呈阵列分布于显示面板中，其中，在每行中，发光器件的数量小于或者等于10；且在每列中，发光器件的数量小于或者等于10。\n\n[0036]在其中一个实施例中，显示面板包括玻璃基板，至少一个像素电路100、至少一个第一焊盘PAD1以及至少一个第二焊盘PAD2中的至少部分设置于玻璃基板。\n\n[0037]需要进行说明的是，在本实施例中，可以减小玻璃基板的使用尺寸，提高制作各薄膜晶体管的均匀性。\n\n[0038]在其中一个实施例中，本实施例提供一种显示装置，其包括上述任一实施例中的显示面板；其中，像素电路100包括三个薄膜晶体管和一个电容。\n\n[0039]在其中一个实施例中，也可以通过万用表扎第一焊盘PAD1，以判断不同信号之间在操作过程中是否发生短路。\n\n[0040]在其中一个实施例中，显示面板还包括黑油膜层，黑油膜层可以通过黑油材料形成于显示面板的显示区AA，在显示面板的亮度加持下，可以进一步提高显示面板的对比度。\n\n[0041]可以理解的是，本实施例提供的显示装置，通过柔性电路板200电性连接印制电路板300与对应的第二焊盘PAD2，可以避免使用大量的覆晶薄膜，减少了边框空间，同时也可以减少信号的传输压降；且通过第一焊盘PAD1可以检测像素电路100的电信号，或者传输测试信号至像素电路100，如此便于实时测试或者了解像素电路100的工作情况。\n\n[0042]需要进行说明的是，该三个薄膜晶体管可以但不限于为非晶硅薄膜晶体管，也可以为铟镓锌氧化物薄膜晶体管，还可以为顶栅型铟镓锌氧化物薄膜晶体管等等，可以验证不同类型器件的性能。\n\n[0043]需要进行说明的是，本申请实施例所提供的显示面板及显示装置可以应用于信号指示、计数器等；可以具有较高的显示亮度。\n\n[0044]另外，本申请实施例所提供的显示面板及显示装置也可以应用于无边框尺寸要求的其他小尺寸显示场所，如汽车仪表盘，小家电温度、状态显示等。且由于设置有第一焊盘PAD1，便于显示面板的后期检测与维修。\n\n[0045]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0046]以上对本申请实施例所提供的显示面板及显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10974, 24028, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种发光器件驱动电路、背光模组以及显示面板。\n\n背景技术\n\n[0002]微观发光二极管(Micro Light Emitting Diode，Micro-LED)显示器件具有反应快、宽色域、高分辨率、低能耗、高分辨率、高效率等优点，使其在显示面板具有很好的应用前景。目前，Micro-LED显示器件已成为各大面板厂商的布局热点。\n\n[0003]但是驱动器件的稳定性受工艺条件的限制，在长时间加温和加压的条件下，器件的阈值电压容易产生偏差，进而影响经过Micro-LED显示器件的电流。虽然目前已有很多阈值电压补偿的驱动电路架构，但是现有的驱动电路架构通常只能对驱动晶体管的阈值电压进行补偿，而不能对发光控制晶体管的阈值电压进行补偿。因此，发光控制晶体管的阈值电压会影响经过Micro-LED显示器件的电流，进而影响Micro-LED显示器件的显示效果。\n\n[0004]因此，如何避免发光控制晶体管的阈值电压影响Micro-LED显示器件的显示效果是现有面板厂家需要努力攻克的难关。\n\n发明内容\n\n[0005]本申请实施例的目的在于提供一种发光器件驱动电路、背光模组以及显示面板，能够解决现有的发光控制晶体管的阈值电压影响Micro-LED显示器件的显示效果的技术问题。\n\n[0006]本申请实施例提供一种发光器件驱动电路，包括：\n\n[0007]发光器件，所述发光器件串接于第一电源信号与第二电源信号构成的发光回路；\n\n[0008]驱动晶体管，所述驱动晶体管的源极以及所述驱动晶体管的漏极串接于所述发光回路；\n\n[0009]数据信号写入模块，所述数据信号写入模块接入扫描信号以及数据信号，并电性连接于所述驱动晶体管的栅极，所述数据信号写入模块用于在所述扫描信号的控制下，将所述数据信号写入所述驱动晶体管的栅极；\n\n[0010]第一发光控制模块，所述第一发光控制模块接入第一发光控制信号，并串联于所述发光回路，所述第一发光控制模块用于基于所述第一发光控制信号控制所述发光回路导通或截止；以及\n\n[0011]第二发光控制模块，所述第二发光控制模块接入第二发光控制信号，并串联于所述发光回路，所述第二发光控制模块用于基于所述第二发光控制信号控制所述发光回路导通或截止；\n\n[0012]其中，所述第一发光控制模块以及所述第二发光控制模块按照预设时间段交替控制所述发光回路导通或截止。\n\n[0013]在本申请所述的发光器件驱动电路中，所述预设时间段为0.5毫秒至1毫秒。\n\n[0014]在本申请所述的发光器件驱动电路中，所述数据信号写入模块包括数据信号写入晶体管，所述数据信号写入晶体管的栅极接入所述扫描信号，所述数据信号写入晶体管的源极接入所述数据信号，所述数据信号写入晶体管的漏极电性连接于所述驱动晶体管的栅极。\n\n[0015]在本申请所述的发光器件驱动电路中，所述第一发光控制模块包括第一发光控制晶体管，所述第一发光控制晶体管的栅极接入所述第一发光控制信号，所述第一发光控制晶体管的源极接入所述第一电源信号，所述第一发光控制晶体管的漏极电性连接于所述驱动晶体管的源极。\n\n[0016]在本申请所述的发光器件驱动电路中，所述第二发光控制模块包括第二发光控制晶体管，所述第二发光控制晶体管的栅极接入所述第二发光控制信号，所述第二发光控制晶体管的源极接入所述第一电源信号，所述第二发光控制晶体管的漏极电性连接于所述驱动晶体管的源极。\n\n[0017]在本申请所述的发光器件驱动电路中，所述发光器件驱动电路还包括第一存储电容以及补偿晶体管，所述第一存储电容的一端电性连接于所述驱动晶体管的栅极，所述第一存储电容的另一端电性连接于所述驱动晶体管的漏极，所述补偿晶体管的栅极接入补偿控制信号，所述补偿晶体管的源极接入第三电源信号，所述补偿晶体管的漏极电性连接于所述驱动晶体管的漏极。\n\n[0018]在本申请所述的发光器件驱动电路中，所述发光器件驱动电路还包括第二存储电容，所述第二存储电容的一端接入所述第一电源信号，所述第二存储电容的另一端电性连接于所述发光器件的阳极。\n\n[0019]在本申请所述的发光器件驱动电路中，所述第一电源信号的电位大于所述第二电源信号的电位。\n\n[0020]本申请实施例还提供一种背光模组，包括：\n\n[0021]数据线，所述数据线用于提供数据信号；\n\n[0022]扫描线，所述扫描线用于提供扫描信号；\n\n[0023]第一发光控制信号线，所述第一发光控制信号线用于提供第一发光控制信号；\n\n[0024]第二发光控制信号线，所述第二发光控制信号线用于提供第二发光控制信号；以及\n\n[0025]如以上所述的发光器件驱动电路，所述发光器件驱动电路与所述数据线、所述扫描线、所述第一发光控制信号线以及所述第二发光控制信号线连接。\n\n[0026]本申请实施例还提供一种显示面板，所述显示面板包括多个呈阵列排布的像素单元，每一所述像素单元均以上所述的发光器件驱动电路。\n\n[0027]在本申请实施例提供的发光器件驱动电路、背光模组以及显示面板中，包括发光器件、驱动晶体管、数据信号写入模块、第一发光控制模块以及第二发光控制模块。通过使第一发光控制模块以及第二发光控制模块交替控制发光回路导通或截止，从而减少单个发光控制模块受正向偏压的时间，减小发光控制模块阈值电压漂移的幅度，提升驱动电路整体的稳定性，进而保证发光二极管的发光亮度均匀，改善Micro-LED显示器件的显示效果。\n\n附图说明\n\n[0028]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0029]图1为本申请实施例提供的发光器件驱动电路的结构示意图。\n\n[0030]图2为本申请实施例提供的发光器件驱动电路的第一电路示意图。\n\n[0031]图3为本申请实施例提供的发光器件驱动电路的第二电路示意图。\n\n[0032]图4为本申请实施例提供的发光器件驱动电路的第三电路示意图。\n\n[0033]图5为本申请实施例提供的发光器件驱动电路的时序图。\n\n[0034]图6为本申请实施例提供的背光模组的结构示意图。\n\n[0035]图7为本申请实施例提供的显示面板的结构示意图。\n\n具体实施方式\n\n[0036]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0037]本申请所有实施例中采用的晶体管可以为薄膜晶体管或场效应管或其他特性相同的器件，由于这里采用的晶体管的源极、漏极是对称的，所以其源极、漏极是可以互换的。在本申请实施例中，为区分晶体管除栅极之外的两极，将其中一极称为源极，另一极称为漏极。按附图中的形态规定开关晶体管的中间端为栅极、信号输入端为源极、输出端为漏极。此外本申请实施例所采用的晶体管可以包括P型晶体管和/或N型晶体管两种，其中，P型晶体管在栅极为低电平时导通，在栅极为高电平时截止，N型晶体管为在栅极为高电平时导通，在栅极为低电平时截止。\n\n[0038]请参阅图1，图1为本申请实施例提供的发光器件驱动电路的第一种实施方式的结构示意图。如图1所示，本申请实施例提供的发光器件驱动电路10包括发光器件D、驱动晶体管T1、数据信号写入模块101、第一发光控制模块102以及第二发光控制模块103。需要说明的是，发光器件D可以为迷你发光二极管、微型发光二极管或有机发光二极管。\n\n[0039]其中，发光器件D串接于第一电源信号VDD与第二电源信号VSS构成的发光回路。驱动晶体管T1的源极以及驱动晶体管T1的漏极串接于发光回路。数据信号写入模块101接入扫描信号scan和数据信号data，并电性连接于驱动晶体管T1的栅极。第一发光控制模块102接入第一发光控制信号EM1，并串联于发光回路。第二发光控制模块103接入第二发光控制信号EM2，并串联于发光回路。\n\n[0040]需要说明的是，本申请实施例只需保证发光器件D串接于发光回路即可，图1所示的发光器件驱动电路10仅仅示意出发光器件D的一种具体位置。也即，发光器件D可以串接在发光回路上的任意位置。\n\n[0041]具体的，具体的，驱动晶体管T1用于控制流经发光回路的电流。数据信号写入模块101用于在扫描信号scan的控制下，将数据信号data写入驱动晶体管T1的栅极。第一发光控制模块102用于基于第一发光控制信号EM1控制发光回路导通或截止。第二发光控制模块103用于基于第二发光控制信号EM2控制发光回路导通或截止。第一发光控制模块102以及第二发光控制模块103按照预设时间段交替控制。\n\n[0042]本申请实施例提供的发光器件驱动电路10，通过使第一发光控制模块102以及第二发光控制模块103交替控制发光回路导通或截止，从而减少单个发光控制模块受正向偏压的时间，减小发光控制模块阈值电压漂移的幅度，提升驱动电路整体的稳定性，进而保证发光二极管的发光亮度均匀，改善Micro-LED显示器件的显示效果。\n\n[0043]其中，还可以设置两个以上的发光控制模块来交替控制发光回路导通或截止，从而更好的减小发光控制模块阈值电压漂移的幅度，提升驱动电路整体的稳定性。另外，设置的发光控制模块越多，版图绘制以及时序设置的难度越高，因此，一般设置两个发光控制模块来交替控制发光回路导通或截止。\n\n[0044]需要说明的是，第一发光控制模块102和第二发光控制模块103是交替控制。具体地说，若第一发光控制模块102控制第一行像素单元的发光，那么第二发光控制模块103控制第二行像素单元的发光，依次类推可知，第一发光控制模块102控制第(2n-1)行像素单元的发光，第二发光控制模块103控制第2n行像素单元的发光，其中，n＝1,2,3…。也就是说，第一发光控制模块102和第二发光控制模块103是交替控制的预设时间段为控制一行像素单元发光所用的时间。\n\n[0045]其中，预设时间段为0.5毫秒至1毫秒。具体地，预设时间段为0.5毫秒、0.55毫米、0.6毫秒、0.7毫秒、0.85毫秒或1毫秒。需要说明的是，预设时间段的数值与显示装置一行像素单元发光所用的时间一致。\n\n[0046]需要说明的是，第一电源信号VLED和第二电源信号VSS均用于输出一预设电压值。此外，在本申请实施例中，第一电源信号VLED的电位大于第二电源信号VSS的电位。具体的，第二电源信号VSS的电位可以为接地端的电位。当然，可以理解地，第二电源信号VSS的电位还可以为其它。\n\n[0047]请参观图2，图2为本申请实施例提供的发光器件驱动电路的第一电路示意图。结合图1、图2所示，数据信号写入模块101包括数据信号写入晶体管T2。数据信号写入晶体管T2的栅极接入扫描信号scan。数据信号写入晶体管T2的源极接入数据信号data。数据信号写入晶体管T2的漏极电性连接于驱动晶体管T1的栅极。当然，可以理解地，数据信号写入模块101还可以采用多个晶体管串联形成。\n\n[0048]第一发光控制模块102包括第一发光控制晶体管T3。第一发光控制晶体管T3的栅极接入第一发光控制信号EM1。第一发光控制晶体管T3的源极接入第一电源信号VDD。第一发光控制晶体管T3的漏极电性连接于驱动晶体管T1的源极。当然，可以理解地，第一发光控制模块102还可以采用多个晶体管串联形成。\n\n[0049]第二发光控制模块103包括第二发光控制晶体管T4。第二发光控制晶体管T4的栅极接入第二发光控制信号EM2。第二发光控制晶体管T4的源极接入第一电源信号VDD。第二发光控制晶体管T4的漏极电性连接于驱动晶体管T1的源极。当然，可以理解地，第二发光控制模块103还可以采用多个晶体管串联形成。\n\n[0050]其中，第二发光控制晶体管T4和第一发光控制晶体管T3并联设置。\n\n[0051]需要说明的是，驱动晶体管T1、数据信号写入晶体管T2、第一发光控制晶体管T3以及第二发光控制晶体管T4可以为低温多晶硅薄膜晶体管、氧化物半导体薄膜晶体管或非晶硅薄膜晶体管中的一种或者多种。进一步的，可以设置本申请实施例提供的发光器件驱动电路10中的晶体管为同一种类型的晶体管，从而避免不同类型的晶体管之间的差异性对发光器件驱动电路10造成的影响。\n\n[0052]请参阅图3，图3为本申请实施例提供的发光器件驱动电路的第二电路示意图。如图3所示，图3所示的发光器件驱动电路10与图2所示的发光器件驱动电路10的区别在于：发光器件驱动电路10还包括第一存储电容C1以及补偿晶体管T5。第一存储电容C1的一端电性连接于驱动晶体管T1的栅极。第一存储电容C1的另一端电性连接于驱动晶体管T1的漏极。补偿晶体管T5的栅极接入补偿控制信号lnit。补偿晶体管T5的源极接入第三电源信号Vini.补偿晶体管T5的漏极电性连接于驱动晶体管T1的漏极。\n\n[0053]其中，驱动晶体管T1的栅极，数据信号写入晶体管T2的漏极以及第一存储电容C1的一端交接于第一节点P。驱动晶体管T1的漏极、发光器件D的阳极、第一存储电容C1的另一端以及补偿晶体管T5的漏极交接于第二节点Q。\n\n[0054]需要说明的是，第一存储电容C1可以维持第一节点P的电压稳定。第一存储电容C1以及发光器件D可以维持第二节点Q的电压稳定。从而对驱动晶体管T1的阈值电压进行补偿。\n\n[0055]请参阅图4，图4为本申请实施例提供的发光器件驱动电路的第三电路示意图。如图4所示，图4所示的发光器件驱动电路10与图3所示的发光器件驱动电路10的区别在于：发光器件驱动电路10还包括第二存储电容C2。第二存储电容C2的一端接入第一电源信号VDD。第二存储电容C2的另一端电性连接于发光器件D的阳极。\n\n[0056]需要说明的是，因为发光器件D自身存在一定的电容，从而可以与第一存储电容C维持第二节点Q的电压稳定，而且当发光器件D的电容达到一定值时，发光器件驱动电路10的补偿范围为最佳值。但是由于发光器件D的电容较小，无法达到所需的值，因此设置了第二存储电容C2。\n\n[0057]其中，本申请实施例提供的发光器件驱动电路10通过第一存储电容C1、第二存储电容C2以及发光器件D来维持第二节点Q的稳定，从而使发光器件驱动电路10的补偿范围达到最佳值，提高发光器件驱动电路10的稳定性。\n\n[0058]请参阅图5，图5为本申请实施例提供的发光器件驱动电路的时序图。如图5所示，在第一阶段t1，本申请实施例提供的发光驱动电路10采用第一发光控制信号EM1来驱动发光器件D发光。在第二阶段，本申请实施例提供的发光驱动电路10采用第二发光控制信号EM2来驱动发光器件D发光。\n\n[0059]其中，需要说明的是，第一电源信号VLED、第二电源信号VSS以及第三电源信号Vini均为直流电压源。\n\n[0060]在本申请实施例提供的发光驱动电路中，包括发光器件、驱动晶体管、数据信号写入模块、第一发光控制模块以及第二发光控制模块。通过使第一发光控制模块以及第二发光控制模块交替控制发光回路导通或截止，从而减少单个发光控制模块受正向偏压的时间，减小发光控制模块阈值电压漂移的幅度，提升驱动电路整体的稳定性，进而保证发光二极管的发光亮度均匀，改善Micro-LED显示器件的显示效果。\n\n[0061]请参阅图6，图6为本申请实施例提供的背光模组的结构示意图。本申请实施例还提供一种背光模组100，其包括数据线20、扫描线30、第一发光控制信号线40、第二发光控制信号线50以及以上所述的发光器件驱动电路10。其中，数据线20用于提供数据信号。扫描线30用于提供扫描信号。第一发光控制信号线40用于提供第一发光控制信号。第二发光控制信号线50用于提供第二发光控制信号。发光器件驱动电路10与数据线20、扫描线30、第一发光控制信号线40以及第二发光控制信号线50连接。发光器件驱动电路10具体可参照以上对该发光器件驱动电路的描述，在此不做赘述。\n\n[0062]在本申请实施例提供的背光模组中，包括发光器件、驱动晶体管、数据信号写入模块、第一发光控制模块以及第二发光控制模块。通过使第一发光控制模块以及第二发光控制模块交替控制发光回路导通或截止，从而减少单个发光控制模块受正向偏压的时间，减小发光控制模块阈值电压漂移的幅度，提升驱动电路整体的稳定性，进而保证发光二极管的发光亮度均匀，改善Micro-LED显示器件的显示效果。\n\n[0063]请参阅图7，图7为本申请实施例提供的显示面板的结构示意图。本申请实施例还提供一种显示面板200，包括多个呈阵列排布的像素单元2000，每一像素单元2000均包括以上所述的发光器件驱动电路10，具体可参照以上对该发光器件驱动电路10的描述，在此不做赘述。\n\n[0064]在本申请实施例提供的显示面板中，包括发光器件、驱动晶体管、数据信号写入模块、第一发光控制模块以及第二发光控制模块。通过使第一发光控制模块以及第二发光控制模块交替控制发光回路导通或截止，从而减少单个发光控制模块受正向偏压的时间，减小发光控制模块阈值电压漂移的幅度，提升驱动电路整体的稳定性，进而保证发光二极管的发光亮度均匀，改善Micro-LED显示器件的显示效果。\n\n[0065]以上对本申请实施例所提供的一种发光器件驱动电路、背光模组以及显示面板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种发光器件驱动电路、背光模组以及显示面板。\n\n背景技术\n\n[0002]微观发光二极管(Micro Light Emitting Diode，Micro-LED)显示器件具有反应快、宽色域、高分辨率、低能耗、高分辨率、高效率等优点，使其在显示面板具有很好的应用前景。目前，Micro-LED显示器件已成为各大面板厂商的布局热点。\n\n[0003]但是驱动器件的稳定性受工艺条件的限制，在长时间加温和加压的条件下，器件的阈值电压容易产生偏差，进而影响经过Micro-LED显示器件的电流。虽然目前已有很多阈值电压补偿的驱动电路架构，但是现有的驱动电路架构通常只能对驱动晶体管的阈值电压进行补偿，而不能对发光控制晶体管的阈值电压进行补偿。因此，发光控制晶体管的阈值电压会影响经过Micro-LED显示器件的电流，进而影响Micro-LED显示器件的显示效果。\n\n[0004]因此，如何避免发光控制晶体管的阈值电压影响Micro-LED显示器件的显示效果是现有面板厂家需要努力攻克的难关。\n\n发明内容\n\n[0005]本申请实施例的目的在于提供一种发光器件驱动电路、背光模组以及显示面板，能够解决现有的发光控制晶体管的阈值电压影响Micro-LED显示器件的显示效果的技术问题。\n\n[0006]本申请实施例提供一种发光器件驱动电路，包括：\n\n[0007]发光器件，所述发光器件串接于第一电源信号与第二电源信号构成的发光回路；\n\n[0008]驱动晶体管，所述驱动晶体管的源极以及所述驱动晶体管的漏极串接于所述发光回路；\n\n[0009]数据信号写入模块，所述数据信号写入模块接入扫描信号以及数据信号，并电性连接于所述驱动晶体管的栅极，所述数据信号写入模块用于在所述扫描信号的控制下，将所述数据信号写入所述驱动晶体管的栅极；\n\n[0010]第一发光控制模块，所述第一发光控制模块接入第一发光控制信号，并串联于所述发光回路，所述第一发光控制模块用于基于所述第一发光控制信号控制所述发光回路导通或截止；以及\n\n[0011]第二发光控制模块，所述第二发光控制模块接入第二发光控制信号，并串联于所述发光回路，所述第二发光控制模块用于基于所述第二发光控制信号控制所述发光回路导通或截止；\n\n[0012]其中，所述第一发光控制模块以及所述第二发光控制模块按照预设时间段交替控制所述发光回路导通或截止。\n\n[0013]在本申请所述的发光器件驱动电路中，所述预设时间段为0.5毫秒至1毫秒。\n\n[0014]在本申请所述的发光器件驱动电路中，所述数据信号写入模块包括数据信号写入晶体管，所述数据信号写入晶体管的栅极接入所述扫描信号，所述数据信号写入晶体管的源极接入所述数据信号，所述数据信号写入晶体管的漏极电性连接于所述驱动晶体管的栅极。\n\n[0015]在本申请所述的发光器件驱动电路中，所述第一发光控制模块包括第一发光控制晶体管，所述第一发光控制晶体管的栅极接入所述第一发光控制信号，所述第一发光控制晶体管的源极接入所述第一电源信号，所述第一发光控制晶体管的漏极电性连接于所述驱动晶体管的源极。\n\n[0016]在本申请所述的发光器件驱动电路中，所述第二发光控制模块包括第二发光控制晶体管，所述第二发光控制晶体管的栅极接入所述第二发光控制信号，所述第二发光控制晶体管的源极接入所述第一电源信号，所述第二发光控制晶体管的漏极电性连接于所述驱动晶体管的源极。\n\n[0017]在本申请所述的发光器件驱动电路中，所述发光器件驱动电路还包括第一存储电容以及补偿晶体管，所述第一存储电容的一端电性连接于所述驱动晶体管的栅极，所述第一存储电容的另一端电性连接于所述驱动晶体管的漏极，所述补偿晶体管的栅极接入补偿控制信号，所述补偿晶体管的源极接入第三电源信号，所述补偿晶体管的漏极电性连接于所述驱动晶体管的漏极。\n\n[0018]在本申请所述的发光器件驱动电路中，所述发光器件驱动电路还包括第二存储电容，所述第二存储电容的一端接入所述第一电源信号，所述第二存储电容的另一端电性连接于所述发光器件的阳极。\n\n[0019]在本申请所述的发光器件驱动电路中，所述第一电源信号的电位大于所述第二电源信号的电位。\n\n[0020]本申请实施例还提供一种背光模组，包括：\n\n[0021]数据线，所述数据线用于提供数据信号；\n\n[0022]扫描线，所述扫描线用于提供扫描信号；\n\n[0023]第一发光控制信号线，所述第一发光控制信号线用于提供第一发光控制信号；\n\n[0024]第二发光控制信号线，所述第二发光控制信号线用于提供第二发光控制信号；以及\n\n[0025]如以上所述的发光器件驱动电路，所述发光器件驱动电路与所述数据线、所述扫描线、所述第一发光控制信号线以及所述第二发光控制信号线连接。\n\n[0026]本申请实施例还提供一种显示面板，所述显示面板包括多个呈阵列排布的像素单元，每一所述像素单元均以上所述的发光器件驱动电路。\n\n[0027]在本申请实施例提供的发光器件驱动电路、背光模组以及显示面板中，包括发光器件、驱动晶体管、数据信号写入模块、第一发光控制模块以及第二发光控制模块。通过使第一发光控制模块以及第二发光控制模块交替控制发光回路导通或截止，从而减少单个发光控制模块受正向偏压的时间，减小发光控制模块阈值电压漂移的幅度，提升驱动电路整体的稳定性，进而保证发光二极管的发光亮度均匀，改善Micro-LED显示器件的显示效果。\n\n附图说明\n\n[0028]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0029]图1为本申请实施例提供的发光器件驱动电路的结构示意图。\n\n[0030]图2为本申请实施例提供的发光器件驱动电路的第一电路示意图。\n\n[0031]图3为本申请实施例提供的发光器件驱动电路的第二电路示意图。\n\n[0032]图4为本申请实施例提供的发光器件驱动电路的第三电路示意图。\n\n[0033]图5为本申请实施例提供的发光器件驱动电路的时序图。\n\n[0034]图6为本申请实施例提供的背光模组的结构示意图。\n\n[0035]图7为本申请实施例提供的显示面板的结构示意图。\n\n具体实施方式\n\n[0036]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0037]本申请所有实施例中采用的晶体管可以为薄膜晶体管或场效应管或其他特性相同的器件，由于这里采用的晶体管的源极、漏极是对称的，所以其源极、漏极是可以互换的。在本申请实施例中，为区分晶体管除栅极之外的两极，将其中一极称为源极，另一极称为漏极。按附图中的形态规定开关晶体管的中间端为栅极、信号输入端为源极、输出端为漏极。此外本申请实施例所采用的晶体管可以包括P型晶体管和/或N型晶体管两种，其中，P型晶体管在栅极为低电平时导通，在栅极为高电平时截止，N型晶体管为在栅极为高电平时导通，在栅极为低电平时截止。\n\n[0038]请参阅图1，图1为本申请实施例提供的发光器件驱动电路的第一种实施方式的结构示意图。如图1所示，本申请实施例提供的发光器件驱动电路10包括发光器件D、驱动晶体管T1、数据信号写入模块101、第一发光控制模块102以及第二发光控制模块103。需要说明的是，发光器件D可以为迷你发光二极管、微型发光二极管或有机发光二极管。\n\n[0039]其中，发光器件D串接于第一电源信号VDD与第二电源信号VSS构成的发光回路。驱动晶体管T1的源极以及驱动晶体管T1的漏极串接于发光回路。数据信号写入模块101接入扫描信号scan和数据信号data，并电性连接于驱动晶体管T1的栅极。第一发光控制模块102接入第一发光控制信号EM1，并串联于发光回路。第二发光控制模块103接入第二发光控制信号EM2，并串联于发光回路。\n\n[0040]需要说明的是，本申请实施例只需保证发光器件D串接于发光回路即可，图1所示的发光器件驱动电路10仅仅示意出发光器件D的一种具体位置。也即，发光器件D可以串接在发光回路上的任意位置。\n\n[0041]具体的，具体的，驱动晶体管T1用于控制流经发光回路的电流。数据信号写入模块101用于在扫描信号scan的控制下，将数据信号data写入驱动晶体管T1的栅极。第一发光控制模块102用于基于第一发光控制信号EM1控制发光回路导通或截止。第二发光控制模块103用于基于第二发光控制信号EM2控制发光回路导通或截止。第一发光控制模块102以及第二发光控制模块103按照预设时间段交替控制。\n\n[0042]本申请实施例提供的发光器件驱动电路10，通过使第一发光控制模块102以及第二发光控制模块103交替控制发光回路导通或截止，从而减少单个发光控制模块受正向偏压的时间，减小发光控制模块阈值电压漂移的幅度，提升驱动电路整体的稳定性，进而保证发光二极管的发光亮度均匀，改善Micro-LED显示器件的显示效果。\n\n[0043]其中，还可以设置两个以上的发光控制模块来交替控制发光回路导通或截止，从而更好的减小发光控制模块阈值电压漂移的幅度，提升驱动电路整体的稳定性。另外，设置的发光控制模块越多，版图绘制以及时序设置的难度越高，因此，一般设置两个发光控制模块来交替控制发光回路导通或截止。\n\n[0044]需要说明的是，第一发光控制模块102和第二发光控制模块103是交替控制。具体地说，若第一发光控制模块102控制第一行像素单元的发光，那么第二发光控制模块103控制第二行像素单元的发光，依次类推可知，第一发光控制模块102控制第(2n-1)行像素单元的发光，第二发光控制模块103控制第2n行像素单元的发光，其中，n＝1,2,3…。也就是说，第一发光控制模块102和第二发光控制模块103是交替控制的预设时间段为控制一行像素单元发光所用的时间。\n\n[0045]其中，预设时间段为0.5毫秒至1毫秒。具体地，预设时间段为0.5毫秒、0.55毫米、0.6毫秒、0.7毫秒、0.85毫秒或1毫秒。需要说明的是，预设时间段的数值与显示装置一行像素单元发光所用的时间一致。\n\n[0046]需要说明的是，第一电源信号VLED和第二电源信号VSS均用于输出一预设电压值。此外，在本申请实施例中，第一电源信号VLED的电位大于第二电源信号VSS的电位。具体的，第二电源信号VSS的电位可以为接地端的电位。当然，可以理解地，第二电源信号VSS的电位还可以为其它。\n\n[0047]请参观图2，图2为本申请实施例提供的发光器件驱动电路的第一电路示意图。结合图1、图2所示，数据信号写入模块101包括数据信号写入晶体管T2。数据信号写入晶体管T2的栅极接入扫描信号scan。数据信号写入晶体管T2的源极接入数据信号data。数据信号写入晶体管T2的漏极电性连接于驱动晶体管T1的栅极。当然，可以理解地，数据信号写入模块101还可以采用多个晶体管串联形成。\n\n[0048]第一发光控制模块102包括第一发光控制晶体管T3。第一发光控制晶体管T3的栅极接入第一发光控制信号EM1。第一发光控制晶体管T3的源极接入第一电源信号VDD。第一发光控制晶体管T3的漏极电性连接于驱动晶体管T1的源极。当然，可以理解地，第一发光控制模块102还可以采用多个晶体管串联形成。\n\n[0049]第二发光控制模块103包括第二发光控制晶体管T4。第二发光控制晶体管T4的栅极接入第二发光控制信号EM2。第二发光控制晶体管T4的源极接入第一电源信号VDD。第二发光控制晶体管T4的漏极电性连接于驱动晶体管T1的源极。当然，可以理解地，第二发光控制模块103还可以采用多个晶体管串联形成。\n\n[0050]其中，第二发光控制晶体管T4和第一发光控制晶体管T3并联设置。\n\n[0051]需要说明的是，驱动晶体管T1、数据信号写入晶体管T2、第一发光控制晶体管T3以及第二发光控制晶体管T4可以为低温多晶硅薄膜晶体管、氧化物半导体薄膜晶体管或非晶硅薄膜晶体管中的一种或者多种。进一步的，可以设置本申请实施例提供的发光器件驱动电路10中的晶体管为同一种类型的晶体管，从而避免不同类型的晶体管之间的差异性对发光器件驱动电路10造成的影响。\n\n[0052]请参阅图3，图3为本申请实施例提供的发光器件驱动电路的第二电路示意图。如图3所示，图3所示的发光器件驱动电路10与图2所示的发光器件驱动电路10的区别在于：发光器件驱动电路10还包括第一存储电容C1以及补偿晶体管T5。第一存储电容C1的一端电性连接于驱动晶体管T1的栅极。第一存储电容C1的另一端电性连接于驱动晶体管T1的漏极。补偿晶体管T5的栅极接入补偿控制信号lnit。补偿晶体管T5的源极接入第三电源信号Vini.补偿晶体管T5的漏极电性连接于驱动晶体管T1的漏极。\n\n[0053]其中，驱动晶体管T1的栅极，数据信号写入晶体管T2的漏极以及第一存储电容C1的一端交接于第一节点P。驱动晶体管T1的漏极、发光器件D的阳极、第一存储电容C1的另一端以及补偿晶体管T5的漏极交接于第二节点Q。\n\n[0054]需要说明的是，第一存储电容C1可以维持第一节点P的电压稳定。第一存储电容C1以及发光器件D可以维持第二节点Q的电压稳定。从而对驱动晶体管T1的阈值电压进行补偿。\n\n[0055]请参阅图4，图4为本申请实施例提供的发光器件驱动电路的第三电路示意图。如图4所示，图4所示的发光器件驱动电路10与图3所示的发光器件驱动电路10的区别在于：发光器件驱动电路10还包括第二存储电容C2。第二存储电容C2的一端接入第一电源信号VDD。第二存储电容C2的另一端电性连接于发光器件D的阳极。\n\n[0056]需要说明的是，因为发光器件D自身存在一定的电容，从而可以与第一存储电容C维持第二节点Q的电压稳定，而且当发光器件D的电容达到一定值时，发光器件驱动电路10的补偿范围为最佳值。但是由于发光器件D的电容较小，无法达到所需的值，因此设置了第二存储电容C2。\n\n[0057]其中，本申请实施例提供的发光器件驱动电路10通过第一存储电容C1、第二存储电容C2以及发光器件D来维持第二节点Q的稳定，从而使发光器件驱动电路10的补偿范围达到最佳值，提高发光器件驱动电路10的稳定性。\n\n[0058]请参阅图5，图5为本申请实施例提供的发光器件驱动电路的时序图。如图5所示，在第一阶段t1，本申请实施例提供的发光驱动电路10采用第一发光控制信号EM1来驱动发光器件D发光。在第二阶段，本申请实施例提供的发光驱动电路10采用第二发光控制信号EM2来驱动发光器件D发光。\n\n[0059]其中，需要说明的是，第一电源信号VLED、第二电源信号VSS以及第三电源信号Vini均为直流电压源。\n\n[0060]在本申请实施例提供的发光驱动电路中，包括发光器件、驱动晶体管、数据信号写入模块、第一发光控制模块以及第二发光控制模块。通过使第一发光控制模块以及第二发光控制模块交替控制发光回路导通或截止，从而减少单个发光控制模块受正向偏压的时间，减小发光控制模块阈值电压漂移的幅度，提升驱动电路整体的稳定性，进而保证发光二极管的发光亮度均匀，改善Micro-LED显示器件的显示效果。\n\n[0061]请参阅图6，图6为本申请实施例提供的背光模组的结构示意图。本申请实施例还提供一种背光模组100，其包括数据线20、扫描线30、第一发光控制信号线40、第二发光控制信号线50以及以上所述的发光器件驱动电路10。其中，数据线20用于提供数据信号。扫描线30用于提供扫描信号。第一发光控制信号线40用于提供第一发光控制信号。第二发光控制信号线50用于提供第二发光控制信号。发光器件驱动电路10与数据线20、扫描线30、第一发光控制信号线40以及第二发光控制信号线50连接。发光器件驱动电路10具体可参照以上对该发光器件驱动电路的描述，在此不做赘述。\n\n[0062]在本申请实施例提供的背光模组中，包括发光器件、驱动晶体管、数据信号写入模块、第一发光控制模块以及第二发光控制模块。通过使第一发光控制模块以及第二发光控制模块交替控制发光回路导通或截止，从而减少单个发光控制模块受正向偏压的时间，减小发光控制模块阈值电压漂移的幅度，提升驱动电路整体的稳定性，进而保证发光二极管的发光亮度均匀，改善Micro-LED显示器件的显示效果。\n\n[0063]请参阅图7，图7为本申请实施例提供的显示面板的结构示意图。本申请实施例还提供一种显示面板200，包括多个呈阵列排布的像素单元2000，每一像素单元2000均包括以上所述的发光器件驱动电路10，具体可参照以上对该发光器件驱动电路10的描述，在此不做赘述。\n\n[0064]在本申请实施例提供的显示面板中，包括发光器件、驱动晶体管、数据信号写入模块、第一发光控制模块以及第二发光控制模块。通过使第一发光控制模块以及第二发光控制模块交替控制发光回路导通或截止，从而减少单个发光控制模块受正向偏压的时间，减小发光控制模块阈值电压漂移的幅度，提升驱动电路整体的稳定性，进而保证发光二极管的发光亮度均匀，改善Micro-LED显示器件的显示效果。\n\n[0065]以上对本申请实施例所提供的一种发光器件驱动电路、背光模组以及显示面板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10975, 24029, '【技术领域】\n\n[0001]本发明涉及显示技术领域,具体涉及一种阵列基板的制作方法与显示装置。\n\n【背景技术】\n\n[0002]现有的无边框或窄边框的研发主流方式中，背面绑定方式，采用背面工艺技术在基板背面进行对应外围线路设计，基板侧面印刷纳米银胶与外围走线对应，使正面的线路与背面外围走线连接，最后在背面进行薄膜封装晶片的绑定；从而实现窄边框或无边框的效果。\n\n[0003]以上无边框或窄边框技术均采用侧面印刷纳米银胶与激光切割，但是受限印刷精度要求极高，制程工艺经常会有银离子扩散渗透或银胶对位异常导致基板短路或导致基板刚度降低，从而良率较低，同时成本高居不下，导致无边框技术无法广泛采用及普及。\n\n[0004]故,有需要提供一种阵列基板的制作方法与显示装置,以解决现有技术银离子扩散渗透或银胶对位异常导致基板短路或导致基板刚度降低的问题。\n\n【发明内容】\n\n[0005]为解决上述问题,本发明提出一种阵列基板的制作方法与显示装置,以解决现有技术银离子扩散渗透或银胶对位异常导致基板短路或导致基板刚度降低的问题。\n\n[0006]为达成上述目的，本发明提供一种阵列基板制作方法，包括:\n\n[0007]提供一第一基板，所述第一基板的上表面设置有上边缘线路，所述第一基板的下表面设置有下边缘线路；\n\n[0008]一次性在所述上边缘线路、所述下边缘线路、所述第一基板的上表面边缘、所述第一基板的下表面边缘，以及所述第一基板的侧面涂布感光银浆；\n\n[0009]使用三维曝光遮罩三面曝光所述感光银浆；\n\n[0010]显影曝光后的所述感光银浆；以及\n\n[0011]固化显影后的所述感光银浆以形成连接所述上边缘线路与所述下边缘线路的连接线路。\n\n[0012]于本发明其中的一实施例中，在提供所述第一基板的步骤中，所述第一基板的下表面设置有与所述下边缘线路连接的下薄膜封装芯片(Chip On Film,COF)。\n\n[0013]于本发明其中的一实施例中，所述感光银浆的涂布厚度在4至6微米之间。\n\n[0014]于本发明其中的一实施例中，所述感光银浆通过转印、丝印或者喷涂方式印刷在所述上边缘线路、所述下边缘线路、所述第一基板的上表面、所述第一基板的下表面，以及所述第一基板的侧面。\n\n[0015]于本发明其中的一实施例中，所述感光银浆与所述上边缘线路、所述下边缘线路、所述第一基板的上表面、所述第一基板的下表面，以及所述第一基板的侧面的黏附力为5百格(B)以上。\n\n[0016]于本发明其中的一实施例中，固化显影后的所述感光银浆的线宽与线距在30μm以下，体积电阻率低于1.0×10-4Ωcm。\n\n[0017]于本发明其中的一实施例中，所述使用所述三维曝光遮罩三面曝光所述感光银浆的步骤还包含:\n\n[0018]使用一输出光源照射边曝系统；以\n\n[0019]三面曝光所述感光银浆。\n\n[0020]于本发明其中的一实施例中，所述边曝系统包含分光镜、第一反射镜、第二反射镜、第三反射镜，以及第四反射镜，所述输出光源照射所述分光镜与所述分光镜之间的所述第一基板的侧面，所述分光镜将光束分成上行光束与下行光束，所述上行光束通过所述第一反射镜与所述第三反射镜照射所述上边缘线路以及所述第一基板的上表面、所述下行光束通过所述第二反射镜与所述第四反射镜照射所述下边缘线路以及所述第一基板的下表面。\n\n[0021]于本发明其中的一实施例中，通过喷淋(shower)显影法、喷雾显影法、浸渍(dip)显影法或覆液(液池)显影法显影曝光后的所述感光银浆。\n\n[0022]为达成上述目的，本发明还提供一种显示装置，其包含如上所述的阵列基板制造方法制造的所述阵列基板；\n\n[0023]多个微发光二极体(mini LED)，设置在所述阵列基板上；以及\n\n[0024]封装层，覆盖于所述多个微发光二极体及所述阵列基板上。\n\n[0025]本发明阵列基板的制作方法与显示面板，通过一次性涂布感光银浆在上边缘线路、下边缘线路、第一基板的上表面、第一基板的下表面，以及第一基板的侧面，同时对感光银浆三面曝光，减少第一基板上显影后残留的粒子，并且，阵列基板制备时不需反复翻面，提高阵列基板的生产效率。\n\n【附图说明】\n\n[0026]图1是本发明的制备阵列基板的流程示意图；\n\n[0027]图2是本发明的三面曝光前的阵列基板的示意图；\n\n[0028]图3是本发明用于三面曝光的边曝系统的必要元件示意图；\n\n[0029]图4是本发明用于显影阵列基板的显影系统的示意图；\n\n[0030]图5是本发明的曝光遮罩的俯视示意图；\n\n[0031]图6是本发明的显示面板的结构示意图。\n\n【具体实施方式】\n\n[0032]以下实施例的说明是参考附加的图示,用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语,例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本发明,而非用以限制本发明。\n\n[0033]在图中,结构相似的单元是以相同标号表示。\n\n[0034]请参照图1与图2，图1是本发明制备阵列基板的流程示意图，图2是本发明三面曝光前的阵列基板的示意图。\n\n[0035]在流程S1中，提供一第一基板10，所述第一基板10的上表面设置有上边缘线路20，所述第一基板的下表面设置有下边缘线路21。\n\n[0036]在流程S2中，一次性在上边缘线路20、下边缘线路21、所述第一基板10的上表面边缘101、所述第一基板的下表面边缘103，以及所述第一基板的侧面102涂布感光银浆110，在涂布感光银浆110前，先制备上边缘线路20与下边缘线路21，且第一基板10的上表面边缘101位于上边缘线路20与第一基板的侧面102之间，第一基板10的下表面边缘103位于下边缘线路21与第一基板的侧面102之间，通过使感光银浆110涂布连接上边缘线路20与下边缘线路21，可降低应用本发明技术方案的阵列基板AS的边框厚度。\n\n[0037]在本发明的一实施方式中，第一基板10的下表面设置有与下边缘线路21连接的下薄膜封装芯片(Chip On Film,COF)。感光银浆110的涂布连接上边缘线路20与下边缘线路21，下边缘线路21连接下薄膜封装芯片，进一步简化阵列基板的布线分布。\n\n[0038]在本发明的一实施例中，感光银浆110的涂布厚度在4至6微米之间，以平衡桥接上边缘线路20与下边缘线路21的电阻率、信号传输稳定性以及后续形成的布线与上边缘线路20、下边缘线路21、所述第一基板10的上表面边缘101、所述第一基板的下表面边缘103，以及所述第一基板的侧面102的黏着力。\n\n[0039]在本发明的一实施例中，感光银浆110是通过转印、丝印或者喷涂方式，连续涂布在所述上边缘线路20、所述下边缘线路21、所述第一基板10的上表面边缘101、所述第一基板10的下表面边缘103，以及所述第一基板的侧面102。其中感光银浆110可由所述上边缘线路20涂布至所述下边缘线路21，或者以相反方向进行涂布。由于通过涂布感光银浆110形成上边缘线路20与下边缘线路21间的桥接构件，在对第一基板10加工时，无需翻动第一基板10即可完成感光银浆110的涂布。\n\n[0040]在本发明的一较佳实施例中，感光银浆110与金属接面的黏度依根据美国材料测试协会的ASTM D3359「量测附着性的标准试验方法–胶布试验法」规范分级为等级5B，以强化感光银浆110在第一基板10上形成的桥接构件的黏着度。详细而言，涂布后的感光银浆110与上边缘线路20、下边缘线路21、第一基板10的上表面边缘101、第一基板10的下表面边缘103，以及第一基板的侧面102的黏附力等级皆为5B，因此，提升阵列基板AS受力弯折的承受度，避免显影后的感光银浆110于阵列基板受力弯折时易于剥离金属接面。\n\n[0041]在本发明的一较佳实施例中，固化显影后的感光银浆的线宽与线距在30μm以下，体积电阻率低于1.0×10-4Ωcm，以平衡形成后的感光银浆的线宽分布，同时，降低显影固化后的感光银浆线路之间，出现残留颗粒的几率。\n\n[0042]在流程S3中，使用三维曝光遮罩三面曝光感光银浆110。其中，使用三维曝光遮罩三面曝光感光银浆110的流程还包含:\n\n[0043]光源50照射边曝系统SE以三面曝光感光银浆110。\n\n[0044]在本发明的一较佳实施例中，输出光源50为面光源。\n\n[0045]请参阅图3，图3为本发明边曝系统的元件示意图，其中，边曝系统SE包含分光镜、第一反射镜51、第二反射镜52、第三反射镜53，以及第四反射镜54。所述分光镜包含第一分光镜41与第二分光镜42。所述输出光源50照射所述第一分光镜41与第二分光镜42的转向面411与421，并且部份光线穿过第一分光镜41与第二分光镜42之间，直接照射三维曝光遮罩30。三维曝光遮罩30包覆第一基板10的上边缘线路20、下边缘线路21、第一基板的上表面边缘101、第一基板的下表面边缘103，以及第一基板的侧面102。曝光遮罩30的侧表面31对应第一基板的侧面102；并且，入射第一分光镜41的转向面411的光形成上行光束被连续反射到第一反射镜51与第三反射镜53，再自第三反射镜53照射曝光遮罩30的上表面32；入射第二分光镜42的转向面421的光形成下行光束被连续反射到第二反射镜52与第四反射镜54，再自第四反射镜54照射曝光遮罩30的下表面33。照射曝光遮罩30的光源均来自输出光源50，达成第一基板10的三面同时曝光，且同样无需翻转第一基板10即可完成。\n\n[0046]本发明图3绘制了用于三面曝光的主要构件，其他连接第一分光镜41、第二分光镜42、第一反射镜51、第二反射镜52、第三反射镜53、第四反射镜54与曝光遮罩30的固定部件未绘制在图3中。需要特别说明的是，通过曝光遮罩30搭配输出光源50以及反射镜的配置，三面照射感光银浆110时，位于第一基板10转角处的感光银浆110会受到两个方向来的光束曝光，因此可能会产生过度曝光的问题。曝光遮罩30可以在转角处设计较小的开口，以改善过度曝光的问题。如图5所示曝光遮罩的俯视图，在曝光遮罩30侧表面31与上表面32相接的转角，所述曝光遮罩30的开口图案渐缩。\n\n[0047]在本发明的一实施例中，输出光源50为面光源。\n\n[0048]在流程S4中，显影曝光后的感光银浆110。\n\n[0049]在本发明的一实施例中，通过喷淋(shower)显影法、喷雾显影法、浸渍(dip)显影法或覆液(液池)显影法显影曝光后的所述感光银浆110。\n\n[0050]其中，请参照本发明图4，图4是本发明用于显影阵列基板的显影系统的示意图。其中，第一基板10置于载台部70上，并浸泡在显影液81中，其中，第一基板10整体置于显影系统80内，通过显影液81显影，以提升感光银浆110的显影效率。\n\n[0051]在流程S5中，固化显影后的感光银浆110以形成连接所述上边缘线路20与所述下边缘线路21的连接线路。\n\n[0052]请参照图6，图6是本发明的显示面板的结构示意图。本发明还提供一种包含上述的阵列基板制造方法制造的阵列基板AS，设置在所述阵列基板AS上的多个微发光二极体(mini LED)，以及覆盖多个微发光二极体L及阵列基板AS上的封装层E。\n\n[0053]通过上述阵列基板的制造方法及显示装置，本申请一次性涂布感光银浆在上边缘线路、下边缘线路、第一基板的上表面、第一基板的下表面，以及第一基板的侧面，同时对感光银浆三面曝光，减少第一基板上显影后残留的粒子，并且，阵列基板制备时不需反复翻面，提高阵列基板的生产效率。\n\n[0054]以上仅是本发明的优选实施方式,应当指出,对于本领域普通技术人员,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。', '【技术领域】\n\n[0001]本发明涉及显示技术领域,具体涉及一种阵列基板的制作方法与显示装置。\n\n【背景技术】\n\n[0002]现有的无边框或窄边框的研发主流方式中，背面绑定方式，采用背面工艺技术在基板背面进行对应外围线路设计，基板侧面印刷纳米银胶与外围走线对应，使正面的线路与背面外围走线连接，最后在背面进行薄膜封装晶片的绑定；从而实现窄边框或无边框的效果。\n\n[0003]以上无边框或窄边框技术均采用侧面印刷纳米银胶与激光切割，但是受限印刷精度要求极高，制程工艺经常会有银离子扩散渗透或银胶对位异常导致基板短路或导致基板刚度降低，从而良率较低，同时成本高居不下，导致无边框技术无法广泛采用及普及。\n\n[0004]故,有需要提供一种阵列基板的制作方法与显示装置,以解决现有技术银离子扩散渗透或银胶对位异常导致基板短路或导致基板刚度降低的问题。\n\n【发明内容】\n\n[0005]为解决上述问题,本发明提出一种阵列基板的制作方法与显示装置,以解决现有技术银离子扩散渗透或银胶对位异常导致基板短路或导致基板刚度降低的问题。\n\n[0006]为达成上述目的，本发明提供一种阵列基板制作方法，包括:\n\n[0007]提供一第一基板，所述第一基板的上表面设置有上边缘线路，所述第一基板的下表面设置有下边缘线路；\n\n[0008]一次性在所述上边缘线路、所述下边缘线路、所述第一基板的上表面边缘、所述第一基板的下表面边缘，以及所述第一基板的侧面涂布感光银浆；\n\n[0009]使用三维曝光遮罩三面曝光所述感光银浆；\n\n[0010]显影曝光后的所述感光银浆；以及\n\n[0011]固化显影后的所述感光银浆以形成连接所述上边缘线路与所述下边缘线路的连接线路。\n\n[0012]于本发明其中的一实施例中，在提供所述第一基板的步骤中，所述第一基板的下表面设置有与所述下边缘线路连接的下薄膜封装芯片(Chip On Film,COF)。\n\n[0013]于本发明其中的一实施例中，所述感光银浆的涂布厚度在4至6微米之间。\n\n[0014]于本发明其中的一实施例中，所述感光银浆通过转印、丝印或者喷涂方式印刷在所述上边缘线路、所述下边缘线路、所述第一基板的上表面、所述第一基板的下表面，以及所述第一基板的侧面。\n\n[0015]于本发明其中的一实施例中，所述感光银浆与所述上边缘线路、所述下边缘线路、所述第一基板的上表面、所述第一基板的下表面，以及所述第一基板的侧面的黏附力为5百格(B)以上。\n\n[0016]于本发明其中的一实施例中，固化显影后的所述感光银浆的线宽与线距在30μm以下，体积电阻率低于1.0×10-4Ωcm。\n\n[0017]于本发明其中的一实施例中，所述使用所述三维曝光遮罩三面曝光所述感光银浆的步骤还包含:\n\n[0018]使用一输出光源照射边曝系统；以\n\n[0019]三面曝光所述感光银浆。\n\n[0020]于本发明其中的一实施例中，所述边曝系统包含分光镜、第一反射镜、第二反射镜、第三反射镜，以及第四反射镜，所述输出光源照射所述分光镜与所述分光镜之间的所述第一基板的侧面，所述分光镜将光束分成上行光束与下行光束，所述上行光束通过所述第一反射镜与所述第三反射镜照射所述上边缘线路以及所述第一基板的上表面、所述下行光束通过所述第二反射镜与所述第四反射镜照射所述下边缘线路以及所述第一基板的下表面。\n\n[0021]于本发明其中的一实施例中，通过喷淋(shower)显影法、喷雾显影法、浸渍(dip)显影法或覆液(液池)显影法显影曝光后的所述感光银浆。\n\n[0022]为达成上述目的，本发明还提供一种显示装置，其包含如上所述的阵列基板制造方法制造的所述阵列基板；\n\n[0023]多个微发光二极体(mini LED)，设置在所述阵列基板上；以及\n\n[0024]封装层，覆盖于所述多个微发光二极体及所述阵列基板上。\n\n[0025]本发明阵列基板的制作方法与显示面板，通过一次性涂布感光银浆在上边缘线路、下边缘线路、第一基板的上表面、第一基板的下表面，以及第一基板的侧面，同时对感光银浆三面曝光，减少第一基板上显影后残留的粒子，并且，阵列基板制备时不需反复翻面，提高阵列基板的生产效率。\n\n【附图说明】\n\n[0026]图1是本发明的制备阵列基板的流程示意图；\n\n[0027]图2是本发明的三面曝光前的阵列基板的示意图；\n\n[0028]图3是本发明用于三面曝光的边曝系统的必要元件示意图；\n\n[0029]图4是本发明用于显影阵列基板的显影系统的示意图；\n\n[0030]图5是本发明的曝光遮罩的俯视示意图；\n\n[0031]图6是本发明的显示面板的结构示意图。\n\n【具体实施方式】\n\n[0032]以下实施例的说明是参考附加的图示,用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语,例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本发明,而非用以限制本发明。\n\n[0033]在图中,结构相似的单元是以相同标号表示。\n\n[0034]请参照图1与图2，图1是本发明制备阵列基板的流程示意图，图2是本发明三面曝光前的阵列基板的示意图。\n\n[0035]在流程S1中，提供一第一基板10，所述第一基板10的上表面设置有上边缘线路20，所述第一基板的下表面设置有下边缘线路21。\n\n[0036]在流程S2中，一次性在上边缘线路20、下边缘线路21、所述第一基板10的上表面边缘101、所述第一基板的下表面边缘103，以及所述第一基板的侧面102涂布感光银浆110，在涂布感光银浆110前，先制备上边缘线路20与下边缘线路21，且第一基板10的上表面边缘101位于上边缘线路20与第一基板的侧面102之间，第一基板10的下表面边缘103位于下边缘线路21与第一基板的侧面102之间，通过使感光银浆110涂布连接上边缘线路20与下边缘线路21，可降低应用本发明技术方案的阵列基板AS的边框厚度。\n\n[0037]在本发明的一实施方式中，第一基板10的下表面设置有与下边缘线路21连接的下薄膜封装芯片(Chip On Film,COF)。感光银浆110的涂布连接上边缘线路20与下边缘线路21，下边缘线路21连接下薄膜封装芯片，进一步简化阵列基板的布线分布。\n\n[0038]在本发明的一实施例中，感光银浆110的涂布厚度在4至6微米之间，以平衡桥接上边缘线路20与下边缘线路21的电阻率、信号传输稳定性以及后续形成的布线与上边缘线路20、下边缘线路21、所述第一基板10的上表面边缘101、所述第一基板的下表面边缘103，以及所述第一基板的侧面102的黏着力。\n\n[0039]在本发明的一实施例中，感光银浆110是通过转印、丝印或者喷涂方式，连续涂布在所述上边缘线路20、所述下边缘线路21、所述第一基板10的上表面边缘101、所述第一基板10的下表面边缘103，以及所述第一基板的侧面102。其中感光银浆110可由所述上边缘线路20涂布至所述下边缘线路21，或者以相反方向进行涂布。由于通过涂布感光银浆110形成上边缘线路20与下边缘线路21间的桥接构件，在对第一基板10加工时，无需翻动第一基板10即可完成感光银浆110的涂布。\n\n[0040]在本发明的一较佳实施例中，感光银浆110与金属接面的黏度依根据美国材料测试协会的ASTM D3359「量测附着性的标准试验方法–胶布试验法」规范分级为等级5B，以强化感光银浆110在第一基板10上形成的桥接构件的黏着度。详细而言，涂布后的感光银浆110与上边缘线路20、下边缘线路21、第一基板10的上表面边缘101、第一基板10的下表面边缘103，以及第一基板的侧面102的黏附力等级皆为5B，因此，提升阵列基板AS受力弯折的承受度，避免显影后的感光银浆110于阵列基板受力弯折时易于剥离金属接面。\n\n[0041]在本发明的一较佳实施例中，固化显影后的感光银浆的线宽与线距在30μm以下，体积电阻率低于1.0×10-4Ωcm，以平衡形成后的感光银浆的线宽分布，同时，降低显影固化后的感光银浆线路之间，出现残留颗粒的几率。\n\n[0042]在流程S3中，使用三维曝光遮罩三面曝光感光银浆110。其中，使用三维曝光遮罩三面曝光感光银浆110的流程还包含:\n\n[0043]光源50照射边曝系统SE以三面曝光感光银浆110。\n\n[0044]在本发明的一较佳实施例中，输出光源50为面光源。\n\n[0045]请参阅图3，图3为本发明边曝系统的元件示意图，其中，边曝系统SE包含分光镜、第一反射镜51、第二反射镜52、第三反射镜53，以及第四反射镜54。所述分光镜包含第一分光镜41与第二分光镜42。所述输出光源50照射所述第一分光镜41与第二分光镜42的转向面411与421，并且部份光线穿过第一分光镜41与第二分光镜42之间，直接照射三维曝光遮罩30。三维曝光遮罩30包覆第一基板10的上边缘线路20、下边缘线路21、第一基板的上表面边缘101、第一基板的下表面边缘103，以及第一基板的侧面102。曝光遮罩30的侧表面31对应第一基板的侧面102；并且，入射第一分光镜41的转向面411的光形成上行光束被连续反射到第一反射镜51与第三反射镜53，再自第三反射镜53照射曝光遮罩30的上表面32；入射第二分光镜42的转向面421的光形成下行光束被连续反射到第二反射镜52与第四反射镜54，再自第四反射镜54照射曝光遮罩30的下表面33。照射曝光遮罩30的光源均来自输出光源50，达成第一基板10的三面同时曝光，且同样无需翻转第一基板10即可完成。\n\n[0046]本发明图3绘制了用于三面曝光的主要构件，其他连接第一分光镜41、第二分光镜42、第一反射镜51、第二反射镜52、第三反射镜53、第四反射镜54与曝光遮罩30的固定部件未绘制在图3中。需要特别说明的是，通过曝光遮罩30搭配输出光源50以及反射镜的配置，三面照射感光银浆110时，位于第一基板10转角处的感光银浆110会受到两个方向来的光束曝光，因此可能会产生过度曝光的问题。曝光遮罩30可以在转角处设计较小的开口，以改善过度曝光的问题。如图5所示曝光遮罩的俯视图，在曝光遮罩30侧表面31与上表面32相接的转角，所述曝光遮罩30的开口图案渐缩。\n\n[0047]在本发明的一实施例中，输出光源50为面光源。\n\n[0048]在流程S4中，显影曝光后的感光银浆110。\n\n[0049]在本发明的一实施例中，通过喷淋(shower)显影法、喷雾显影法、浸渍(dip)显影法或覆液(液池)显影法显影曝光后的所述感光银浆110。\n\n[0050]其中，请参照本发明图4，图4是本发明用于显影阵列基板的显影系统的示意图。其中，第一基板10置于载台部70上，并浸泡在显影液81中，其中，第一基板10整体置于显影系统80内，通过显影液81显影，以提升感光银浆110的显影效率。\n\n[0051]在流程S5中，固化显影后的感光银浆110以形成连接所述上边缘线路20与所述下边缘线路21的连接线路。\n\n[0052]请参照图6，图6是本发明的显示面板的结构示意图。本发明还提供一种包含上述的阵列基板制造方法制造的阵列基板AS，设置在所述阵列基板AS上的多个微发光二极体(mini LED)，以及覆盖多个微发光二极体L及阵列基板AS上的封装层E。\n\n[0053]通过上述阵列基板的制造方法及显示装置，本申请一次性涂布感光银浆在上边缘线路、下边缘线路、第一基板的上表面、第一基板的下表面，以及第一基板的侧面，同时对感光银浆三面曝光，减少第一基板上显影后残留的粒子，并且，阵列基板制备时不需反复翻面，提高阵列基板的生产效率。\n\n[0054]以上仅是本发明的优选实施方式,应当指出,对于本领域普通技术人员,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10976, 24030, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种显示面板及其制备方法。\n\n背景技术\n\n[0002]随着显示技术的快速发展，显示面板已经广泛应用于电视、手机、平板电脑等领域。显示面板可以通过太阳能电池板为发光单元供电。显示面板不需要外接电源即可实现正常显示。以太阳能电池板为供电源的显示面板通常是将太阳能电池板与基板进行贴合。然而，由于显示面板的基板设置有信号走线，太阳能电池板不能充分贴合，容易导致太阳能电池板的卷翘和脱落，影响显示面板的正常使用。\n\n发明内容\n\n[0003]本申请的目的在于提供一种显示面板及其制备方法，可以提高太阳能电池板在显示面板中的贴合度，避免太阳能电池板发生卷翘和脱落。\n\n[0004]本申请实施例提供一种显示面板，包括：\n\n[0005]基板；\n\n[0006]多个发光单元，设置在所述基板上；\n\n[0007]支撑层，设置在所述基板靠近所述发光单元的一侧，所述支撑层开设有多个第一开孔，所述第一开孔暴露出所述发光单元；\n\n[0008]太阳能电池板，覆盖所述支撑层，所述太阳能电池板开设有多个第二开孔，所述第二开孔与所述第一开孔连通以暴露出所述发光单元。\n\n[0009]在一些实施例中，所述支撑层远离所述基板的表面与所述基板之间的距离大于所述发光单元远离所述基板的表面与所述基板之间的距离。\n\n[0010]在一些实施例中，所述发光单元位于所述第一开孔内，所述第二开孔的孔径大于或等于所述第一开孔的孔径。\n\n[0011]在一些实施例中，所述支撑层为有机绝缘层，所述第一开孔贯穿所述有机绝缘层以暴露出所述发光单元，所述发光单元位于所述第一开孔内。\n\n[0012]在一些实施例中，所述太阳能电池板与所述支撑层之间具有胶层，所述太阳能电池板与所述支撑层通过所述胶层固定。\n\n[0013]在一些实施例中，所述基板还包括用于驱动所述发光单元的驱动电路，所述驱动电路位于所述基板设置有所述发光单元的一侧，所述支撑层为有机绝缘层，所述支撑层覆盖所述驱动电路。\n\n[0014]在一些实施例中，所述发光单元包括次毫米级发光二极管或微型发光二极管，多个所述发光单元在所述基板上阵列排列；\n\n[0015]所述显示面板还包括位于所述发光单元下方的连接端子，所述发光单元通过所述连接端子与所述驱动电路电连接。\n\n[0016]在一些实施例中，所述显示面板还包括蓄电池，所述蓄电池位于所述基板远离所述发光单元的一侧，所述太阳能电池板与所述蓄电池电连接，所述蓄电池与所述驱动电路电连接。\n\n[0017]在一些实施例中，所述基板为玻璃基板，所述驱动电路包括形成在所述玻璃基板上的薄膜晶体管。\n\n[0018]本申请实施例还提供一种显示面板的制备方法，包括：\n\n[0019]在基板上设置多个发光单元；\n\n[0020]在所述发光单元上形成支撑层，所述支撑层开设有第一开孔，所述第一开孔暴露出所述发光单元；\n\n[0021]在所述支撑层上贴合太阳能电池板，所述太阳能电池板开设有第二开孔，所述第二开孔与所述第一开孔连通以暴露出所述发光单元。\n\n[0022]本申请实施例提供的显示面板包括基板、发光单元、支撑层和太阳能电池板。发光单元设置在基板上。支撑层设置在基板靠近发光单元的一侧。支撑层开设有多个第一开孔。第一开孔暴露出发光单元。太阳能电池板覆盖支撑层。太阳能电池板包括多个第二开孔。第二开孔与第一开孔连通以裸露出发光单元。本申请提供的显示面板通过在基板上设置支撑层。太阳能电池板与支撑层贴合，避免了太阳能电池板与显示面板的基板直接贴合。支撑层可以为太阳能电池板提供平整的表面，有利于提高太阳能电池板与支撑层的贴合度，避免太阳能电池板发生卷翘和脱落，保证显示面板的正常显示。\n\n附图说明\n\n[0023]为了更清楚地说明本申请的实施例的技术方案，下面将对本申请的实施例描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅是申请的一些实施例和实施方式，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0024]图1为本申请实施例提供的显示面板的结构示意图。\n\n[0025]图2为本申请实施例提供的显示面板沿A-A’线的剖面图。\n\n[0026]图3为本申请实施例提供的显示面板的制备方法的流程图。\n\n[0027]图4为本申请实施例提供的显示面板的制备过程的结构示意图。\n\n[0028]图5为本申请实施例提供的执行步骤B30的第一流程图。\n\n[0029]图6为本申请实施例提供的执行步骤B30的第二流程图。\n\n具体实施方式\n\n[0030]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0031]需要说明的是，本申请所提到的[第一]和[第二]等序号用语并不代表任何顺序、数量或者重要性，只是用于区分不同的部分。本申请所提到的[上]、[下]、[左]和[右]等方向用语仅是参考附加图式的方向。本申请提及的[一侧]和[另一侧]等位置关系用语仅用于区分不同的部分。因此，使用的序号用语、方向用语和位置关系用语是用以说明及理解本申请，而非用以限制本申请。在申请中，除非另有明确的规定和限定，第一特征在第二特征的[一侧]、[上]或[下]可以包括第一和第二特征直接，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。贯穿整个说明书，相同的附图标记表示相同的元件。因为附图所例示的各个组件的尺寸和厚度是为了说明方便表示的，所以本公开未必限于各个组件的所例示的尺寸和厚度。\n\n[0032]如图1和图2所示，本申请提供的显示面板100包括基板101、多个连接端子102(Bonding Pad)、驱动电路103、多个发光单元104、支撑层105、太阳能电池板106和蓄电池107。\n\n[0033]基板101可以为硬质基板，比如玻璃基板。可以根据显示面板的实际需求，在基板的上形成其他的膜层，比如缓冲层、平坦层或导电层等。\n\n[0034]连接端子102位于基板101的一侧。多个连接端子102沿第一方向x和第二方向y排列。第一方向x为行方向，第二方向y为列方向。第一方向x垂直于第二方向y。多个连接端子102沿第一方向x和第二方向y排列在基板101上阵列排列。\n\n[0035]驱动电路103位于基板101设置有连接端子102的一侧。驱动电路103位于基板101的边缘。驱动电路103包括形成在基板101上的薄膜晶体管。驱动电路103的薄膜晶体管可以由金属层、有源层和绝缘层通过光罩的方式形成。驱动电路103通过信号走线与连接端子102连接(图中未显示)。本申请中通过光罩的形成在基板上形成薄膜晶体管和信号走线，进而形成驱动电路103。与传统的电路板驱动方式相比，本申请的驱动电路103的制备工艺更加精细，有利于减薄显示面板的厚度，实现显示面板小型化的应用。\n\n[0036]发光单元104可以包括发光二级管芯片(LED Chip)、次毫米级发光二极管芯片(Mini LED Chip)或微型发光二极管芯片(Micro LED Chip)。多个发光单元104在基板101上阵列排列。发光单元104与连接端子102一一对应。发光单元104位于连接端子102上。发光单元104与连接端子102连接。具体的，发光单元104可以通过导电胶、锡膏或银浆等材料与连接端子102实现电连接。连接端子102通过信号走线与驱动电路103连接。连接端子102和驱动电路103控制发光单元104的点亮与熄灭，从而实现显示面板100的显示。\n\n[0037]支撑层105位于基板101设置有发光单元104和驱动电路103的一侧。支撑层105远离基板101的表面与基板101之间的距离大于驱动电路103远离基板101的表面与基板101之间的距离。支撑层105覆盖驱动电路103。支撑层105的材料包括有机绝缘材料，支撑层105为有机绝缘层。因此，当支撑层105覆盖驱动电路103时，支撑层105可以起到隔绝水氧的作用。支撑层105覆盖驱动电路103可以避免空气中的水氧进入到驱动电路103中，有利于延长显示面板100的使用寿命。\n\n[0038]支撑层105远离基板101的表面与基板101之间的距离大于发光单元104远离基板101的表面与基板101之间的距离。当支撑层105的上方贴合其他的膜层时，支撑层可以支撑发光单元104，避免支撑层105上方的膜层与发光单元104接触，有利于保护发光单元104，避免发光单元104的损坏。\n\n[0039]支撑层105远离基板101的一侧开设有多个第一开孔1051。第一开孔1051与发光单元104一一对应。发光单元104位于第一开孔1051内，第一开孔1051暴露出发光单元104。第一开孔1051的孔径d2大于发光单元104的宽度d1。通过设置第一开孔1051与发光单元104一一对应，且第一开孔1051的孔径d2大于发光单元104的宽度d1可以避免发光单元104发出的光线被支撑层105遮挡，有利于提高显示面板100的亮度。\n\n[0040]支撑层105可以为有机绝缘层。有机绝缘层包括多个第一开孔1051。第一开孔1051贯穿有机绝缘层以暴露出发光单元104。发光单元104位于第一开孔1051内。可选地，支撑层105的材料可以与显示面板的平坦层的材料相同。支撑层105可以提供平坦的表面，有利于支撑层105上方的膜层与支撑层105贴合。支撑层105的厚度在100微米至500微米之间。具体的，支撑层105的厚度可以为100微米、200微米、300微米、400微米或500微米。\n\n[0041]太阳能电池板106位于支撑层105远离发光单元104的一侧。太阳能电池板106包括多个第二开孔1061。第二开孔1061与第一开孔1051一一对应。第二开孔1061连通第一开孔1051。第二开孔1061和第一开孔1051暴露出发光单元104。第二开孔1061的孔径d3大于发光单元104的宽度d1。第二开孔1061的孔径d3等于第一开孔1051的孔径d2。上述设置可以避免发光单元104发出的光线被太阳能电池板106遮挡，有利于提高显示面板100的亮度。\n\n[0042]在本申请中，可以设置第二开孔1061的孔径d3大于第一开孔1051的孔径d2。太阳能电池板106通常采用激光切割的方式形成开孔。设置第二开孔1061的孔径d3大于第一开孔1051的孔径d2可以避免太阳能电池板106切割时激光切割发光单元104，进而引起发光单元104的失效。此外，设置第二开孔1061的孔径d3大于第一开孔1051的孔径d2可以进一步增大显示面板100的开口率，有利于提高显示面板100的亮度。\n\n[0043]太阳能电池板106与支撑层105之间具有胶层(图中未显示)。太阳能电池板106与支撑层105通过胶层固定。可选地，胶层为光学胶(OCA胶)。太阳能电池板106通过光学胶与支撑层105贴合。本申请通过胶层将太阳能电池板106和支撑层105固定。与传统的太阳能电池板焊接在显示面板100上的工艺相比，本申请中太阳能电池板106的固定方式更简单，工艺更精细，第二开孔1061和第一开孔1051的对位精度更高，有利于制备高分辨率的显示面板100。\n\n[0044]太阳能电池板106的厚度在1微米至100微米之间。具体的，太阳能电池板106的厚度可以为1微米、10微米、25微米、50微米、75微米或100微米。显示面板100的驱动电压在5伏至30伏之间。具体的，显示面板100的驱动电压可以为5伏、10伏、15伏或30伏。本申请中设置太阳能电池板106的厚度在1微米至100微米之间，可以保证太阳能电池板106为显示面板100提供充足的驱动电压的同时避免显示面板100的厚度过大，有利于实现显示面板100的轻薄化。\n\n[0045]太阳能电池板106的材料可以包括砷化镓(GaAs)、铜铟镓硒[Cu(In(1－x)Ga(x))Se2]或碲化镉(CdTe)。\n\n[0046]蓄电池107位于基板101远离发光单元104的一侧。本申请中设置蓄电池107位于基板101远离发光单元104的一侧可以避免蓄电池107影响发光单元104的开口率。太阳能电池板106通过边缘的端子线电连接于蓄电池107。具体的，可以将端子线设置在覆晶薄膜(ChipOn Film，COF)上。覆晶薄膜可以弯折，进而可以将蓄电池设置在显示面板100的背光侧。太阳能电池板106将光能转换为电能。电能通过端子线存储在蓄电池107中。\n\n[0047]蓄电池107可以通过印刷电路板(Printed Circuit Board，PCB)与驱动电路103连接。蓄电池107中存储的电能为驱动电路103和发光单元104供电，从而实现显示面板100的显示。\n\n[0048]可以理解的是，在本申请中，第一开孔1051的孔径d2可以等于发光单元104的宽度d1。图1和图2以第一开孔1051的孔径d2可以大于发光单元104的宽度d1为例，但不作为对本申请的限制。\n\n[0049]在本申请中，第一方向x和第二方向y的夹角可以大于0度且小于或等于90度。本申请中以第一方向x和第二方向y的夹角是90度为例，但不作为对本申请的限制。\n\n[0050]本申请实施例提供的显示面板包括基板、发光单元、支撑层和太阳能电池板。本申请的显示面板将支撑层设置基板和太阳能电池板之间。支撑层提供平坦的表面。因此，太阳能电池板可以有效地与支撑层贴合，避免了因基板上有信号走线而导致太阳能面板不能有效地贴合在基板上。同时，支撑层可以起到防刮的作用。基板上通常布置有信号走线。若太阳能电池板与基板直接贴合，太阳能电池板与信号走线容易发生摩擦，容易导致太阳能电池板和信号走线的损坏。支撑层覆盖基板上的信号走线，且太阳能电池板与支撑层远离信号走线的一侧直接接触。支撑层可以起到防刮的作用，避免了太阳能电池板和信号走线直接接触，有利于保护太阳能电池板和信号走线。\n\n[0051]本申请实施例还提供一种显示面板的制备方法。如图3和图4所示，本申请提供的显示面板的制备方法具体包括以下步骤：\n\n[0052]步骤B10：在基板上设置多个发光单元。\n\n[0053]如图4中(a)结构，基板101可以是硬质基板，例如，基板101可以是玻璃基板101。基板101的材料可以根据显示面板100的实际需要进行选择。\n\n[0054]在基板101上设置发光单元104之前，可以通过光罩的方式在基板101的表面形成驱动电路103，连接端子102和信号走线。驱动电路103包括形成在基板101上的薄膜晶体管和信号走线。驱动电路103设置在显示面板100的边缘，连接端子102在显示面板100中阵列分布。连接端子102通过信号走线与驱动电路103连接。\n\n[0055]本申请中通过光罩的形成在基板上形成薄膜晶体管和信号走线，进而形成驱动电路103。与传统的电路板驱动方式相比，本申请的驱动电路103的制备工艺更加精细，有利于减薄显示面板的厚度，实现显示面板小型化的应用。\n\n[0056]发光单元104与连接端子102一一对应。发光单元104通过导电胶、锡膏或银浆等材料与连接端子102实现电连接，从而实现发光单元104在显示面板100上均匀分布。\n\n[0057]步骤B20：在发光单元上形成支撑层，支撑层开设有第一开孔，第一开孔暴露出发光单元。\n\n[0058]在基板101上设置发光单元104之后，可以在基板101的上方设置一图案化掩模板。不需要形成支撑层105的地方用掩模板进行遮盖，其余地方用支撑层105对应的材料进行涂覆。如图4中(b)结构，形成的支撑层105包括多个第一开孔1051，第一开孔1051与发光单元104一一对应。第一开孔1051暴露出发光单元104，从而避免支撑层105影响显示面板100的开口率。\n\n[0059]支撑层105的材料可以包括有机绝缘材料。支撑层可以为有机绝缘层。可选的，支撑层105的材料可以与显示面板100平坦层的材料相同。\n\n[0060]步骤B30：在支撑层上贴合太阳能电池板，太阳能电池板开设有第二开孔，第二开孔与第一开孔连通以暴露出发光单元。\n\n[0061]在支撑层105上贴合太阳能电池板106，形成的结构如图4(c)结构。太阳能电池板106包括多个第二开孔1061。第二开孔1061与支撑层105的第一开孔1051一一对应。第二开孔1061与第一开孔1051连通从而暴露出发光单元104。因此，本申请提供的显示面板100的制备方法可以实现太阳能电池板106为显示面板100供电的同时不会影响显示面板100的开口率。\n\n[0062]如图5所示，在支撑层105上贴合太阳能电池板106的步骤可以包括：\n\n[0063]步骤B31：通过激光切割对太阳能电池板进行图案化处理以形成第二开孔。\n\n[0064]在太阳能电池板106与支撑层105贴合之前，对太阳能电池板106进行图案化处理。太阳能电池板106可以包括GaAs电池板、Cu(In(1－x)Ga(x))Se2电池板或CdTe电池板。通过激光对太阳能电池板106进行图案化。在切割的过程中，被激光照射的太阳能电池板106受到强大的热能，其温度急剧升高。高温使得该部分的太阳能电池板106发生熔化，从而形成第二开孔1061。\n\n[0065]步骤B32：将图案化处理后的太阳能电池板与支撑层贴合。\n\n[0066]对太阳能电池板106图案化处理后。将第一开孔1051与第二开孔1061进行对位，以使第一开孔1051和第二开孔1061实现连通。在第一开孔1051与第二开孔1061对位完成后，通过胶层将太阳能电池板106与支撑层105固定。可选地，太阳能电池板106与支撑层105可以通过OCA胶固定。\n\n[0067]如图6所示，在支撑层105上贴合太阳能电池板106的步骤还可以包括：\n\n[0068]步骤B33：将太阳能电池板与支撑层贴合。\n\n[0069]具体的，通过OCA胶将太阳能电池板106与支撑层105贴合。\n\n[0070]步骤B34：通过激光切割对太阳能电池板进行图案化处理以形成第二开孔。\n\n[0071]在太阳能电池板106与支撑层105贴合后，对太阳能电池板106进行图案化处理。可以通过激光对太阳能电池板106进行切割，以形成第二开孔1061。切割后的太阳能电池板106包括多个第二开孔1061。第二开孔1061与第一开孔1051一一对应，第二开孔1061与第一开孔1051连通从而暴露出发光单元104。\n\n[0072]在本申请中，在太阳能电池板106与支撑层105贴合之前，可以通过一CCD摄像头对支撑层105进行拍摄以记录第一开孔1051在支撑层105中的具体位置。CCD摄像头将第一开孔1051的位置信息传输至控制器中，控制器通过模型计算继而得到太阳能电池板106的切割路径，从而使得切割后的太阳能电池板106的第二开孔1061与第一开孔1051一一对应。\n\n[0073]在太阳能电池板106与支撑层105贴合之后，将蓄电池107设置在基板101远离发光单元104的一侧。通过端子线将太阳能电池板106与蓄电池107电连接。通过PCB板将蓄电池107与驱动连接。太阳能电池板106将光能转换为电能，存储在蓄电池107中。蓄电池107中的电能为驱动电路103供电，从而实现显示面板100的正常显示。\n\n[0074]可以理解的是，在本申请中，在基板101上设置多个发光单元104之后，可以通过基板101设置有发光单元104的一侧形成支撑层105。在距离支撑层105一定距离的位置放置一掩膜板，通过掩模板对支撑层105进行紫外线照射，氧化局部区域的支撑层105。通过对平坦层进行干法蚀刻，可以去除局部区域内被氧化的平坦层，从而形成第一开孔1051。第一开孔1051暴露出发光单元104。\n\n[0075]在本申请中，可以在基板101上设置发光单元104之前，还可以通过涂布的方式形成支撑层105。支撑层105覆盖基板101上的驱动电路103和连接端子102。通过显影的方式形成第一开孔1051。第一开孔1051暴露出连接端子102。将发光单元104与第一开孔1051内的连接端子102连接，从而实现在基板101上设置多个发光单元104。\n\n[0076]本申请实施例提供的显示面板的制备方法，在基板和太阳能电池板之间设置支撑层。支撑层提供平坦的表面。因此，太阳能电池板可以有效地与支撑层贴合，避免了因基板上有线路而导致太阳能面板不能有效地贴合在基板上。同时，支撑层可以起到防刮的作用。基板上通常布置有信号走线。若太阳能电池板与基板直接贴合，太阳能电池板与信号走线容易发生摩擦，容易导致太阳能电池板和信号走线的损坏。支撑层覆盖基板上的信号走线，且太阳能电池板与支撑层远离信号走线的一侧直接接触。支撑层可以起到防刮的作用，避免了太阳能电池板和信号走线直接接触，有利于保护太阳能电池板和信号走线。\n\n[0077]综上所述，虽然本申请实施例的详细介绍如上，但上述实施例并非用以限制本申请，本领域的普通技术人员应当理解：其依然可以对前述实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种显示面板及其制备方法。\n\n背景技术\n\n[0002]随着显示技术的快速发展，显示面板已经广泛应用于电视、手机、平板电脑等领域。显示面板可以通过太阳能电池板为发光单元供电。显示面板不需要外接电源即可实现正常显示。以太阳能电池板为供电源的显示面板通常是将太阳能电池板与基板进行贴合。然而，由于显示面板的基板设置有信号走线，太阳能电池板不能充分贴合，容易导致太阳能电池板的卷翘和脱落，影响显示面板的正常使用。\n\n发明内容\n\n[0003]本申请的目的在于提供一种显示面板及其制备方法，可以提高太阳能电池板在显示面板中的贴合度，避免太阳能电池板发生卷翘和脱落。\n\n[0004]本申请实施例提供一种显示面板，包括：\n\n[0005]基板；\n\n[0006]多个发光单元，设置在所述基板上；\n\n[0007]支撑层，设置在所述基板靠近所述发光单元的一侧，所述支撑层开设有多个第一开孔，所述第一开孔暴露出所述发光单元；\n\n[0008]太阳能电池板，覆盖所述支撑层，所述太阳能电池板开设有多个第二开孔，所述第二开孔与所述第一开孔连通以暴露出所述发光单元。\n\n[0009]在一些实施例中，所述支撑层远离所述基板的表面与所述基板之间的距离大于所述发光单元远离所述基板的表面与所述基板之间的距离。\n\n[0010]在一些实施例中，所述发光单元位于所述第一开孔内，所述第二开孔的孔径大于或等于所述第一开孔的孔径。\n\n[0011]在一些实施例中，所述支撑层为有机绝缘层，所述第一开孔贯穿所述有机绝缘层以暴露出所述发光单元，所述发光单元位于所述第一开孔内。\n\n[0012]在一些实施例中，所述太阳能电池板与所述支撑层之间具有胶层，所述太阳能电池板与所述支撑层通过所述胶层固定。\n\n[0013]在一些实施例中，所述基板还包括用于驱动所述发光单元的驱动电路，所述驱动电路位于所述基板设置有所述发光单元的一侧，所述支撑层为有机绝缘层，所述支撑层覆盖所述驱动电路。\n\n[0014]在一些实施例中，所述发光单元包括次毫米级发光二极管或微型发光二极管，多个所述发光单元在所述基板上阵列排列；\n\n[0015]所述显示面板还包括位于所述发光单元下方的连接端子，所述发光单元通过所述连接端子与所述驱动电路电连接。\n\n[0016]在一些实施例中，所述显示面板还包括蓄电池，所述蓄电池位于所述基板远离所述发光单元的一侧，所述太阳能电池板与所述蓄电池电连接，所述蓄电池与所述驱动电路电连接。\n\n[0017]在一些实施例中，所述基板为玻璃基板，所述驱动电路包括形成在所述玻璃基板上的薄膜晶体管。\n\n[0018]本申请实施例还提供一种显示面板的制备方法，包括：\n\n[0019]在基板上设置多个发光单元；\n\n[0020]在所述发光单元上形成支撑层，所述支撑层开设有第一开孔，所述第一开孔暴露出所述发光单元；\n\n[0021]在所述支撑层上贴合太阳能电池板，所述太阳能电池板开设有第二开孔，所述第二开孔与所述第一开孔连通以暴露出所述发光单元。\n\n[0022]本申请实施例提供的显示面板包括基板、发光单元、支撑层和太阳能电池板。发光单元设置在基板上。支撑层设置在基板靠近发光单元的一侧。支撑层开设有多个第一开孔。第一开孔暴露出发光单元。太阳能电池板覆盖支撑层。太阳能电池板包括多个第二开孔。第二开孔与第一开孔连通以裸露出发光单元。本申请提供的显示面板通过在基板上设置支撑层。太阳能电池板与支撑层贴合，避免了太阳能电池板与显示面板的基板直接贴合。支撑层可以为太阳能电池板提供平整的表面，有利于提高太阳能电池板与支撑层的贴合度，避免太阳能电池板发生卷翘和脱落，保证显示面板的正常显示。\n\n附图说明\n\n[0023]为了更清楚地说明本申请的实施例的技术方案，下面将对本申请的实施例描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅是申请的一些实施例和实施方式，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0024]图1为本申请实施例提供的显示面板的结构示意图。\n\n[0025]图2为本申请实施例提供的显示面板沿A-A’线的剖面图。\n\n[0026]图3为本申请实施例提供的显示面板的制备方法的流程图。\n\n[0027]图4为本申请实施例提供的显示面板的制备过程的结构示意图。\n\n[0028]图5为本申请实施例提供的执行步骤B30的第一流程图。\n\n[0029]图6为本申请实施例提供的执行步骤B30的第二流程图。\n\n具体实施方式\n\n[0030]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0031]需要说明的是，本申请所提到的[第一]和[第二]等序号用语并不代表任何顺序、数量或者重要性，只是用于区分不同的部分。本申请所提到的[上]、[下]、[左]和[右]等方向用语仅是参考附加图式的方向。本申请提及的[一侧]和[另一侧]等位置关系用语仅用于区分不同的部分。因此，使用的序号用语、方向用语和位置关系用语是用以说明及理解本申请，而非用以限制本申请。在申请中，除非另有明确的规定和限定，第一特征在第二特征的[一侧]、[上]或[下]可以包括第一和第二特征直接，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。贯穿整个说明书，相同的附图标记表示相同的元件。因为附图所例示的各个组件的尺寸和厚度是为了说明方便表示的，所以本公开未必限于各个组件的所例示的尺寸和厚度。\n\n[0032]如图1和图2所示，本申请提供的显示面板100包括基板101、多个连接端子102(Bonding Pad)、驱动电路103、多个发光单元104、支撑层105、太阳能电池板106和蓄电池107。\n\n[0033]基板101可以为硬质基板，比如玻璃基板。可以根据显示面板的实际需求，在基板的上形成其他的膜层，比如缓冲层、平坦层或导电层等。\n\n[0034]连接端子102位于基板101的一侧。多个连接端子102沿第一方向x和第二方向y排列。第一方向x为行方向，第二方向y为列方向。第一方向x垂直于第二方向y。多个连接端子102沿第一方向x和第二方向y排列在基板101上阵列排列。\n\n[0035]驱动电路103位于基板101设置有连接端子102的一侧。驱动电路103位于基板101的边缘。驱动电路103包括形成在基板101上的薄膜晶体管。驱动电路103的薄膜晶体管可以由金属层、有源层和绝缘层通过光罩的方式形成。驱动电路103通过信号走线与连接端子102连接(图中未显示)。本申请中通过光罩的形成在基板上形成薄膜晶体管和信号走线，进而形成驱动电路103。与传统的电路板驱动方式相比，本申请的驱动电路103的制备工艺更加精细，有利于减薄显示面板的厚度，实现显示面板小型化的应用。\n\n[0036]发光单元104可以包括发光二级管芯片(LED Chip)、次毫米级发光二极管芯片(Mini LED Chip)或微型发光二极管芯片(Micro LED Chip)。多个发光单元104在基板101上阵列排列。发光单元104与连接端子102一一对应。发光单元104位于连接端子102上。发光单元104与连接端子102连接。具体的，发光单元104可以通过导电胶、锡膏或银浆等材料与连接端子102实现电连接。连接端子102通过信号走线与驱动电路103连接。连接端子102和驱动电路103控制发光单元104的点亮与熄灭，从而实现显示面板100的显示。\n\n[0037]支撑层105位于基板101设置有发光单元104和驱动电路103的一侧。支撑层105远离基板101的表面与基板101之间的距离大于驱动电路103远离基板101的表面与基板101之间的距离。支撑层105覆盖驱动电路103。支撑层105的材料包括有机绝缘材料，支撑层105为有机绝缘层。因此，当支撑层105覆盖驱动电路103时，支撑层105可以起到隔绝水氧的作用。支撑层105覆盖驱动电路103可以避免空气中的水氧进入到驱动电路103中，有利于延长显示面板100的使用寿命。\n\n[0038]支撑层105远离基板101的表面与基板101之间的距离大于发光单元104远离基板101的表面与基板101之间的距离。当支撑层105的上方贴合其他的膜层时，支撑层可以支撑发光单元104，避免支撑层105上方的膜层与发光单元104接触，有利于保护发光单元104，避免发光单元104的损坏。\n\n[0039]支撑层105远离基板101的一侧开设有多个第一开孔1051。第一开孔1051与发光单元104一一对应。发光单元104位于第一开孔1051内，第一开孔1051暴露出发光单元104。第一开孔1051的孔径d2大于发光单元104的宽度d1。通过设置第一开孔1051与发光单元104一一对应，且第一开孔1051的孔径d2大于发光单元104的宽度d1可以避免发光单元104发出的光线被支撑层105遮挡，有利于提高显示面板100的亮度。\n\n[0040]支撑层105可以为有机绝缘层。有机绝缘层包括多个第一开孔1051。第一开孔1051贯穿有机绝缘层以暴露出发光单元104。发光单元104位于第一开孔1051内。可选地，支撑层105的材料可以与显示面板的平坦层的材料相同。支撑层105可以提供平坦的表面，有利于支撑层105上方的膜层与支撑层105贴合。支撑层105的厚度在100微米至500微米之间。具体的，支撑层105的厚度可以为100微米、200微米、300微米、400微米或500微米。\n\n[0041]太阳能电池板106位于支撑层105远离发光单元104的一侧。太阳能电池板106包括多个第二开孔1061。第二开孔1061与第一开孔1051一一对应。第二开孔1061连通第一开孔1051。第二开孔1061和第一开孔1051暴露出发光单元104。第二开孔1061的孔径d3大于发光单元104的宽度d1。第二开孔1061的孔径d3等于第一开孔1051的孔径d2。上述设置可以避免发光单元104发出的光线被太阳能电池板106遮挡，有利于提高显示面板100的亮度。\n\n[0042]在本申请中，可以设置第二开孔1061的孔径d3大于第一开孔1051的孔径d2。太阳能电池板106通常采用激光切割的方式形成开孔。设置第二开孔1061的孔径d3大于第一开孔1051的孔径d2可以避免太阳能电池板106切割时激光切割发光单元104，进而引起发光单元104的失效。此外，设置第二开孔1061的孔径d3大于第一开孔1051的孔径d2可以进一步增大显示面板100的开口率，有利于提高显示面板100的亮度。\n\n[0043]太阳能电池板106与支撑层105之间具有胶层(图中未显示)。太阳能电池板106与支撑层105通过胶层固定。可选地，胶层为光学胶(OCA胶)。太阳能电池板106通过光学胶与支撑层105贴合。本申请通过胶层将太阳能电池板106和支撑层105固定。与传统的太阳能电池板焊接在显示面板100上的工艺相比，本申请中太阳能电池板106的固定方式更简单，工艺更精细，第二开孔1061和第一开孔1051的对位精度更高，有利于制备高分辨率的显示面板100。\n\n[0044]太阳能电池板106的厚度在1微米至100微米之间。具体的，太阳能电池板106的厚度可以为1微米、10微米、25微米、50微米、75微米或100微米。显示面板100的驱动电压在5伏至30伏之间。具体的，显示面板100的驱动电压可以为5伏、10伏、15伏或30伏。本申请中设置太阳能电池板106的厚度在1微米至100微米之间，可以保证太阳能电池板106为显示面板100提供充足的驱动电压的同时避免显示面板100的厚度过大，有利于实现显示面板100的轻薄化。\n\n[0045]太阳能电池板106的材料可以包括砷化镓(GaAs)、铜铟镓硒[Cu(In(1－x)Ga(x))Se2]或碲化镉(CdTe)。\n\n[0046]蓄电池107位于基板101远离发光单元104的一侧。本申请中设置蓄电池107位于基板101远离发光单元104的一侧可以避免蓄电池107影响发光单元104的开口率。太阳能电池板106通过边缘的端子线电连接于蓄电池107。具体的，可以将端子线设置在覆晶薄膜(ChipOn Film，COF)上。覆晶薄膜可以弯折，进而可以将蓄电池设置在显示面板100的背光侧。太阳能电池板106将光能转换为电能。电能通过端子线存储在蓄电池107中。\n\n[0047]蓄电池107可以通过印刷电路板(Printed Circuit Board，PCB)与驱动电路103连接。蓄电池107中存储的电能为驱动电路103和发光单元104供电，从而实现显示面板100的显示。\n\n[0048]可以理解的是，在本申请中，第一开孔1051的孔径d2可以等于发光单元104的宽度d1。图1和图2以第一开孔1051的孔径d2可以大于发光单元104的宽度d1为例，但不作为对本申请的限制。\n\n[0049]在本申请中，第一方向x和第二方向y的夹角可以大于0度且小于或等于90度。本申请中以第一方向x和第二方向y的夹角是90度为例，但不作为对本申请的限制。\n\n[0050]本申请实施例提供的显示面板包括基板、发光单元、支撑层和太阳能电池板。本申请的显示面板将支撑层设置基板和太阳能电池板之间。支撑层提供平坦的表面。因此，太阳能电池板可以有效地与支撑层贴合，避免了因基板上有信号走线而导致太阳能面板不能有效地贴合在基板上。同时，支撑层可以起到防刮的作用。基板上通常布置有信号走线。若太阳能电池板与基板直接贴合，太阳能电池板与信号走线容易发生摩擦，容易导致太阳能电池板和信号走线的损坏。支撑层覆盖基板上的信号走线，且太阳能电池板与支撑层远离信号走线的一侧直接接触。支撑层可以起到防刮的作用，避免了太阳能电池板和信号走线直接接触，有利于保护太阳能电池板和信号走线。\n\n[0051]本申请实施例还提供一种显示面板的制备方法。如图3和图4所示，本申请提供的显示面板的制备方法具体包括以下步骤：\n\n[0052]步骤B10：在基板上设置多个发光单元。\n\n[0053]如图4中(a)结构，基板101可以是硬质基板，例如，基板101可以是玻璃基板101。基板101的材料可以根据显示面板100的实际需要进行选择。\n\n[0054]在基板101上设置发光单元104之前，可以通过光罩的方式在基板101的表面形成驱动电路103，连接端子102和信号走线。驱动电路103包括形成在基板101上的薄膜晶体管和信号走线。驱动电路103设置在显示面板100的边缘，连接端子102在显示面板100中阵列分布。连接端子102通过信号走线与驱动电路103连接。\n\n[0055]本申请中通过光罩的形成在基板上形成薄膜晶体管和信号走线，进而形成驱动电路103。与传统的电路板驱动方式相比，本申请的驱动电路103的制备工艺更加精细，有利于减薄显示面板的厚度，实现显示面板小型化的应用。\n\n[0056]发光单元104与连接端子102一一对应。发光单元104通过导电胶、锡膏或银浆等材料与连接端子102实现电连接，从而实现发光单元104在显示面板100上均匀分布。\n\n[0057]步骤B20：在发光单元上形成支撑层，支撑层开设有第一开孔，第一开孔暴露出发光单元。\n\n[0058]在基板101上设置发光单元104之后，可以在基板101的上方设置一图案化掩模板。不需要形成支撑层105的地方用掩模板进行遮盖，其余地方用支撑层105对应的材料进行涂覆。如图4中(b)结构，形成的支撑层105包括多个第一开孔1051，第一开孔1051与发光单元104一一对应。第一开孔1051暴露出发光单元104，从而避免支撑层105影响显示面板100的开口率。\n\n[0059]支撑层105的材料可以包括有机绝缘材料。支撑层可以为有机绝缘层。可选的，支撑层105的材料可以与显示面板100平坦层的材料相同。\n\n[0060]步骤B30：在支撑层上贴合太阳能电池板，太阳能电池板开设有第二开孔，第二开孔与第一开孔连通以暴露出发光单元。\n\n[0061]在支撑层105上贴合太阳能电池板106，形成的结构如图4(c)结构。太阳能电池板106包括多个第二开孔1061。第二开孔1061与支撑层105的第一开孔1051一一对应。第二开孔1061与第一开孔1051连通从而暴露出发光单元104。因此，本申请提供的显示面板100的制备方法可以实现太阳能电池板106为显示面板100供电的同时不会影响显示面板100的开口率。\n\n[0062]如图5所示，在支撑层105上贴合太阳能电池板106的步骤可以包括：\n\n[0063]步骤B31：通过激光切割对太阳能电池板进行图案化处理以形成第二开孔。\n\n[0064]在太阳能电池板106与支撑层105贴合之前，对太阳能电池板106进行图案化处理。太阳能电池板106可以包括GaAs电池板、Cu(In(1－x)Ga(x))Se2电池板或CdTe电池板。通过激光对太阳能电池板106进行图案化。在切割的过程中，被激光照射的太阳能电池板106受到强大的热能，其温度急剧升高。高温使得该部分的太阳能电池板106发生熔化，从而形成第二开孔1061。\n\n[0065]步骤B32：将图案化处理后的太阳能电池板与支撑层贴合。\n\n[0066]对太阳能电池板106图案化处理后。将第一开孔1051与第二开孔1061进行对位，以使第一开孔1051和第二开孔1061实现连通。在第一开孔1051与第二开孔1061对位完成后，通过胶层将太阳能电池板106与支撑层105固定。可选地，太阳能电池板106与支撑层105可以通过OCA胶固定。\n\n[0067]如图6所示，在支撑层105上贴合太阳能电池板106的步骤还可以包括：\n\n[0068]步骤B33：将太阳能电池板与支撑层贴合。\n\n[0069]具体的，通过OCA胶将太阳能电池板106与支撑层105贴合。\n\n[0070]步骤B34：通过激光切割对太阳能电池板进行图案化处理以形成第二开孔。\n\n[0071]在太阳能电池板106与支撑层105贴合后，对太阳能电池板106进行图案化处理。可以通过激光对太阳能电池板106进行切割，以形成第二开孔1061。切割后的太阳能电池板106包括多个第二开孔1061。第二开孔1061与第一开孔1051一一对应，第二开孔1061与第一开孔1051连通从而暴露出发光单元104。\n\n[0072]在本申请中，在太阳能电池板106与支撑层105贴合之前，可以通过一CCD摄像头对支撑层105进行拍摄以记录第一开孔1051在支撑层105中的具体位置。CCD摄像头将第一开孔1051的位置信息传输至控制器中，控制器通过模型计算继而得到太阳能电池板106的切割路径，从而使得切割后的太阳能电池板106的第二开孔1061与第一开孔1051一一对应。\n\n[0073]在太阳能电池板106与支撑层105贴合之后，将蓄电池107设置在基板101远离发光单元104的一侧。通过端子线将太阳能电池板106与蓄电池107电连接。通过PCB板将蓄电池107与驱动连接。太阳能电池板106将光能转换为电能，存储在蓄电池107中。蓄电池107中的电能为驱动电路103供电，从而实现显示面板100的正常显示。\n\n[0074]可以理解的是，在本申请中，在基板101上设置多个发光单元104之后，可以通过基板101设置有发光单元104的一侧形成支撑层105。在距离支撑层105一定距离的位置放置一掩膜板，通过掩模板对支撑层105进行紫外线照射，氧化局部区域的支撑层105。通过对平坦层进行干法蚀刻，可以去除局部区域内被氧化的平坦层，从而形成第一开孔1051。第一开孔1051暴露出发光单元104。\n\n[0075]在本申请中，可以在基板101上设置发光单元104之前，还可以通过涂布的方式形成支撑层105。支撑层105覆盖基板101上的驱动电路103和连接端子102。通过显影的方式形成第一开孔1051。第一开孔1051暴露出连接端子102。将发光单元104与第一开孔1051内的连接端子102连接，从而实现在基板101上设置多个发光单元104。\n\n[0076]本申请实施例提供的显示面板的制备方法，在基板和太阳能电池板之间设置支撑层。支撑层提供平坦的表面。因此，太阳能电池板可以有效地与支撑层贴合，避免了因基板上有线路而导致太阳能面板不能有效地贴合在基板上。同时，支撑层可以起到防刮的作用。基板上通常布置有信号走线。若太阳能电池板与基板直接贴合，太阳能电池板与信号走线容易发生摩擦，容易导致太阳能电池板和信号走线的损坏。支撑层覆盖基板上的信号走线，且太阳能电池板与支撑层远离信号走线的一侧直接接触。支撑层可以起到防刮的作用，避免了太阳能电池板和信号走线直接接触，有利于保护太阳能电池板和信号走线。\n\n[0077]综上所述，虽然本申请实施例的详细介绍如上，但上述实施例并非用以限制本申请，本领域的普通技术人员应当理解：其依然可以对前述实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10977, 24031, '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种显示系统。\n\n背景技术\n\n[0002]目前，大屏全高清(Full High Definition，FHD)及全高清以上分辨率的显示装置是显示领域的发展趋势，而高分辨的显示装置对应的数据量较大，较大的数据量需要较高的数据传输速率。现有的系统集成在显示面板(System On Panel，简称“SOP”)的显示装置，各子模块之间的数据通信需要依靠数据走线进行，如果将数据走线集中在金属层，则整个显示装置制造难度较大，若采用外部接口的形式，则必导致显示装置厚度增加，同时增加显示装置制造的复杂度和成本。\n\n发明内容\n\n[0003]本申请实施例提供一种显示系统，可以解决现有技术中采用SOP技术的显示装置制造难度大的技术问题。\n\n[0004]本申请实施例提供一种显示系统，包括信号源以及总接收模块。信号源用于发出第一功能信号。总接收模块设置于显示装置内，包括多个相互拼接的子接收模块，至少一所述子接收模块通过无线的方式接收所述信号源发出的第一功能信号，所述第一功能信号包含供所述子接收模块执行的功能指令。\n\n[0005]可选的，每一个子接收模块均通过无线的方式接收所述信号源发出的第一功能信号。\n\n[0006]可选的，所述多个子接收模块被分组成若干子接收模块组，所述信号源发出的第一功能信号被发送至各个子接收模块组中并在每个子接收模块组内子接收模块间传递。\n\n[0007]可选的，所述显示系统还包括拆分模块。拆分模块设置于显示装置外，用于接收信号源发出的第一功能信号，并将第一功能信号拆分后分发至各个对应的子接收模块中。\n\n[0008]可选的，所述总接收模块还包括子分发模块。子分发模块与所述子接收模块相互拼接，用于接收信号源的第一功能信号，并将第一功能信号拆分后分发至各个对应的子接收模块中。\n\n[0009]可选的，所述子分发模块包括第一收发单元，所述显示系统还包括设置于设备外的功能模块，所述功能模块包括第二收发单元和执行单元，所述第二收发单元用于接收所述第一收发单元发送的第二功能信号，所述第二功能信号包含供所述执行单元执行的功能指令。\n\n[0010]可选的，所述子接收模块包括接收单元以及功能单元。接收单元用于接收与所述子接收模块对应的第一功能信号。功能单元与所述接收单元电连接，用于执行所述第一功能信号内的功能指令。\n\n[0011]可选的，所述接收单元包括铺设于所述显示装置的面板上的呈网格状的网格天线，所述网格天线的每个网格中至少容纳有一个所述功能单元。\n\n[0012]可选的，所述功能单元包括微型发光二极管。\n\n[0013]可选的，所述接收单元还包括通信线圈，所述通信线圈除用于接收第一功能信号外，还用于与外部设备进行近场通信。\n\n[0014]可选的，所述总接收模块还包括无线充电线圈，所述无线充电线圈与各子接收模块电连接。\n\n[0015]本申请实施例中，通过使显示系统中各子模块采取无线通信的方式接收各种功能信号，使得显示装置内的数据走线被取消掉，简化了显示装置的结构，解决了现有技术中采用SOP技术的显示装置制造难度大的技术问题，同时也保证了各子模块的数据传输效率。\n\n附图说明\n\n[0016]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0017]图1是本申请显示系统的一实施例的信息传输示意图。\n\n[0018]图2是图1示出的显示系统显示装置的一实施例的结构示意图。\n\n[0019]图3是图1示出的显示系统显示装置的另一实施例的结构示意图。\n\n[0020]图4是图1示出的显示系统外部装置的一实施例的结构示意图。\n\n[0021]图5是图2和图3示出的显示装置内总接收模块第一实施例的信息传输示意图。\n\n[0022]图6是图2和图3示出的显示装置内子接收模块第一实施例的结构示意图。\n\n[0023]图7是图2和图3示出的显示装置内子接收模块第二实施例的结构示意图。\n\n[0024]图8是图2和图3示出的显示装置内子接收模块第三实施例的结构示意图。\n\n[0025]图9是图2和图3示出的显示装置内子接收模块第四实施例的结构示意图。\n\n[0026]图10是图2和图3示出的显示装置内子接收模块第五实施例的结构示意图。\n\n[0027]图11是图2和图3示出的显示装置内子接收模块第六实施例的结构示意图。\n\n[0028]图12是图2和图3示出的显示装置内总接收模块第二实施例的信息传输示意图。\n\n[0029]图13是图12示出的显示装置内一实施例的功能模块与子分发模块间的信息传输示意图。\n\n[0030]图14是图2和图3示出的显示装置内总接收模块第三实施例的信息传输示意图。\n\n[0031]附图标记说明：\n\n[0032]1、显示装置；2、外部装置；3、信号源；11、面板；12、总接收模块；13、充电线圈；22、功能模块；23、拆分模块；10、子接收模块组；100、子接收模块；300、子分发模块；110、接收单元；120、功能单元；130、发送单元；910、第一功能信号；920、第二功能信号；911、子信号；111、网格天线；121、微型发光二极管；1111、网格；11111、八边形网格；11112、菱形网格；1211、红光二级管；1212、绿光二级管；1213、蓝光二极管；1214、白光二级管；310、接收单元；320、功能单元；330、分发单元；340、第一收发单元；210、第二收发单元；220、执行单元；230、获取单元；240、拆分单元。\n\n具体实施方式\n\n[0033]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0034]本申请实施例提供一种显示系统，请参阅图1，该显示系统包括显示装置1、与显示装置1电信号连接的外部装置2、向显示装置1发送第一功能信号910的信号源3，该显示装置1可以安装于各种具有显示功能的产品中。例如，电子产品可以是智能终端、笔记本电脑、摄影设备、可穿戴设备、电子秤、车载显示器以及电视机等。该外部设备可以是机顶盒、路由器等。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0035]信号源3用于发出第一功能信号910，其可以位于显示装置1内也可以位于外部装置2内，也可以位于其他位置，本申请在此不做限定。\n\n[0036]请结合参阅图2，该显示装置1包括面板11以及安装于面板11上的总接收模块12，总接收模块12包括多个相互拼接的子接收模块100。每一子接收模块100均通过无线的方式接收信号源3发出的第一功能信号910，该第一功能信号910包含供子接收模块100执行的功能指令。\n\n[0037]请结合参阅图4，外部装置2可以包括功能模块22以及拆分模块23。\n\n[0038]请结合参阅图5，在本申请的一个实施例中，上述的多个子接收模块100被分组呈若干子接收模块组10，每个子接收模块组10的子接收模块100的数量是相等的。每个子接收模块组10中的子接收模块100均按照一列、一行或者一组矩阵的形式排布于面板11上。每个子接收模块100均包括接收单元110、发送单元130以及功能单元120。信号源3向各子接收模块组10发送第一功能信号910，各子接收模块组10中对应的子接收模块100通过接收单元110接收该第一功能信号910，并将该第一功能信号910通过发送单元130转发至组内其他子接收模块100的接收单元110，实现该第一功能信号910在每个子接收模块组10内子接收模块100间的传递。传递的具体方式可以是接收到第一功能信号910的子接收模块100将该第一功能信号910通过发送单元130直接发送至组内其他子接收模块100的接收单元110，也可以是接收到第一功能信号910的子接收模块100将该第一功能信号910通过发送单元130发送至组内与其相邻的子接收模块100的接收单元110，通过级传的方式完成第一功能信号910的传输。在接收到第一功能信号910后，各子接收模块100的功能单元120执行该第一功能信号910内的功能指令。\n\n[0039]在本申请的一些实施例中，上述的接收单元110可以是通信线圈以及微带天线。当接收单元110为通信线圈时，其还用于与外部设备进行近场通信。\n\n[0040]请结合参阅图3，总接收模块12还包括无线充电线圈13，该无线充电线圈13覆盖于各子接收模块100远离面板11的一面，并与各子接收模块100电连接，以向总接收模块12内的各子接收模块100提供电能。\n\n[0041]在本申请的一个实施例中，请结合参阅图6至图11，上述的子接收模块100为显示模块，上述的接收单元110包括铺设于所述显示装置1的面板11上的呈网格1111状的网格天线111，上述的功能单元120包括微型发光二极管121。网格天线111的每个网格1111中至少容纳有一个微型发光二极管121。每个微型发光二极管121均与网格天线111电信号连接，网格天线111接收第一功能信号910后传递至微型发光二极管121处，使得微型发光二极管121根据第一功能信号910开启或熄灭。\n\n[0042]其中，上述网格天线111的网格1111可以是矩形、菱形、六边形等多边形及其组合。\n\n[0043]当网格天线111的每个网格1111中容纳一个微型发光二极管121时，每个微型发光二极管121均构成显示模块的一个亚像素。\n\n[0044]在本申请的一个实施例中，请结合参阅图6，网格天线111的网格1111为矩形，每个网格天线111的网格1111中容纳有一个微型发光二极管121，每两相邻网格1111内的微型发光二级管的发光颜色不同，每个网格1111相对两侧的网格1111内的微型发光二级管的发光颜色也不同。上述排布方式排布紧密，可以有效提高单位面积内的分辨率，提升显示模块的显示效果。\n\n[0045]在本申请的另一个实施例中，请结合参阅图7，网格天线111的网格1111为菱形，每个网格1111中容纳有一个微型发光二极管121。每四个网格1111构成一个网格组，该网格组可以呈一斜列组，也可以呈一个菱形组，该网格组中的网格1111内依次设有红光二级管1211、绿光二级管1212、蓝光二极管1213以及白光二级管1214，即网格1111组内的每个网格1111均构成显示模块的一个亚像素，每个网格1111组内的网格1111共同构成一个像素。上述排布方式不仅排布紧密，可以有效提高单位面积内的分辨率，还提升了显示模块的亮度，使得显示模块呈现色彩更丰富，提升了显示模块的显示效果。\n\n[0046]在本申请的又一个实施例中，请结合参阅图8，网格天线111的网格1111为菱形和八边形的组合，每个八边形网格11111中均容纳有一个微型发光二极管121，而菱形网格11112中则不容纳微型发光二极管121。每两相邻网格1111内的微型发光二级管的发光颜色不同，每个网格1111相对两侧的网格1111内的微型发光二级管的发光颜色也不同。上述排布方式可缩减单位面积内网格天线111的长度，并保证网格天线111的信号性能。\n\n[0047]当线的每个网格1111中容纳多个微型发光二极管121时，每个网格1111中所有微型发光二极管121共同构成显示模块的一个像素。\n\n[0048]在本申请的一个实施例中，请结合参阅图9，网格天线111的网格1111为长条形，每个网格天线111的网格1111中容纳有三个微型发光二极管121，依次按照红光二级管1211、绿光二级管1212、蓝光二极管1213成行间隔排列。网格天线111接收第一功能信号910后传递至每个网格1111的微型发光二极管121处，使得该网格1111内的微型发光二极管121根据第一功能信号910开启或熄灭，达到一个像素点的控制效果。该排布方式可以进一步提升微型发光二极管121排布的紧密程度，可以进一步有效提高单位面积内的分辨率，从而提升显示模块的显示效果。同时，该在一个网格天线111的网格1111内容纳多个微型发光二极管121也有利于节省网格天线111的用料，进而降低制造成本。\n\n[0049]在本申请的另一个实施例中，请结合参阅图10，网格天线111的网格1111为方形，每个网格天线111的网格1111中容纳有四个微型发光二级管，依次按照红光二级管1211、绿光二级管1212、蓝光二极管1213、白光二级光从上到下、由左自右成矩形阵列排列。上述排布方式使得每个网格1111内的微型发光二级管尽量聚拢在一起，使得其构成的像素的亚像素排布更紧密，不仅可以有效提高单位面积内的分辨率，还提升了显示模块的亮度，使得显示模块呈现色彩更丰富，同时也提升了显示模块的显示效果。\n\n[0050]在本申请的又一个实施例中，请结合参阅图11，网格天线111的网格1111为菱形，每个网格天线111的网格1111中容纳有四个微型发光二级管，其包括一红光二级管1211、一蓝光二极管1213以及两绿光二级管1212，红光二级管1211和蓝光二级管等大，并都大于两绿光二级管1212。两绿光二级管1212分别设置于网格天线111的网格1111内靠近两锐角的区域，红光二级管1211和蓝光二级管分别设置于网格天线111的网格1111内靠近两钝角的区域，上述排布方式使得每个网格1111内的微型发光二级管尽量聚拢在一起，使得其构成的像素的亚像素排布更紧密，不仅可以有效提高单位面积内的分辨率，保证了显示的细腻程度，同时也提升了显示模块的显示效果。\n\n[0051]在本申请的另一实施例中，请结合参阅图12，上述的总接收模块12除包括子接收模块100外，还包括子分发模块300。子分发模块300与子接收模块100相互拼接，用于接收信号源3的第一功能信号910，并将第一功能信号910拆分后分发至各个对应的子接收模块100中。在本实施例中，每个子接收模块100均包括接收单元110以及功能单元120。而子分发模块300除了包括接收单元310以及功能单元320外，还包括分发单元330。\n\n[0052]信号源3向子分发模块300发送第一功能信号910，子分发模块300的接收单元310接收该第一功能信号910，并将该第一功能信号910通过分发单元330拆分成多个子信号911后发送至总接收模块12内的对应的子接收模块100的接收单元110，完成第一功能信号910的传递。其具体方式可以是，子分发模块300在通过接收单元310接收到第一功能信号910后，将第一功能信号910拆分成多个子信号911后发送至各子接收模块100处，每个子信号911均带有不同的功能指令，并与特定的信号标记关联。各子接收模块100的接收单元110根据信号标记收取其对应的子信号911。在接收到第一功能信号910后，子分发模块300的功能单元320和各子接收模块100的功能单元120执行该第一功能信号910内的功能指令。\n\n[0053]例如，在一个实施例中，总接收模块12为扫描模块，则子分发模块300和子接收模块100即均为扫描子模块，其均执行扫描任务，其区别仅在于子分发模块300内设有承担分发任务的分发单元330。在本申请的一个实施例中，上述的扫描模块中均设有分发单元330，以便在其中一个扫描模块中的分发单元330失效的情况下快速切换。\n\n[0054]在本申请的一实施例中，请结合参阅图13，外部装置2包括功能模块22，功能模块22包括第二收发单元210和执行单元220。子分发模块300对应还包括第一收发单元340。功能模块22的第二收发单元210用于接收第一收发单元340发送的第二功能信号920，第二功能信号920包含供执行单元220执行的功能指令，该功能指令为总接收模块12无法执行的指令。在本申请的一具体实施例中，第一收发单元340和第二收发单元210均为WIFI单元，子分发模块300通过WIFI通信，控制功能模块22执行部分功能指令。\n\n[0055]在本申请的又一实施例中，请结合参阅图14，外部装置2包括拆分模块23。拆分模块23用于接收信号源3发出的第一功能信号910，并将第一功能信号910拆分后分发至各个对应的子接收模块100中。在本实施例中，每个子接收模块100均包括接收单元110以及功能单元120。拆分模块23包括获取单元230以及拆分单元240。\n\n[0056]信号源3向拆分模块23发送第一功能信号910，拆分模块23的接收单元110接收该第一功能信号910，并将该第一功能信号910通过拆分单元240拆分成多个子信号911后，发送至总接收模块12内的对应的子接收模块100的接收单元110，完成第一功能信号910的传递。其具体方式可以是，拆分模块23在通过获取单元230接收到第一功能信号910后，将第一功能信号910拆分成多个子信号911后发送至各子接收模块100处，每个子信号911均带有不同的功能指令，并与特定的信号标记关联。各子接收模块100的接收单元110根据信号标记收取其对应的子信号911。在接收到第一功能信号910后，各子接收模块100的功能单元120执行该第一功能信号910内的功能指令。\n\n[0057]例如，在一个实施例中，总接收模块12为音频模块，子接收模块100即均为音频子模块，其均执行音频处理任务。外部设备为路由器，其获取到通过网线传输的第一功能信号910后，将其拆分为不同的子信号911，然后发送至各子接收模块100处，子接收模块100即进行音频处理任务。\n\n[0058]在本申请中，子接收模块100通过无线通信的方式与信号源3、子分发模块300以及拆分模块23进行数据传输，子分发模块300也通过无线通信的方式与信号源3以及功能模块22进行数据传输，使得显示装置内的数据走线被取消掉，简化了显示装置的结构，解决了现有技术中采用SOP技术的显示装置制造难度大的技术问题，同时也保证了各子模块的数据传输效率。\n\n[0059]以上对本申请实施例所提供的一种显示系统进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种显示系统。\n\n背景技术\n\n[0002]目前，大屏全高清(Full High Definition，FHD)及全高清以上分辨率的显示装置是显示领域的发展趋势，而高分辨的显示装置对应的数据量较大，较大的数据量需要较高的数据传输速率。现有的系统集成在显示面板(System On Panel，简称“SOP”)的显示装置，各子模块之间的数据通信需要依靠数据走线进行，如果将数据走线集中在金属层，则整个显示装置制造难度较大，若采用外部接口的形式，则必导致显示装置厚度增加，同时增加显示装置制造的复杂度和成本。\n\n发明内容\n\n[0003]本申请实施例提供一种显示系统，可以解决现有技术中采用SOP技术的显示装置制造难度大的技术问题。\n\n[0004]本申请实施例提供一种显示系统，包括信号源以及总接收模块。信号源用于发出第一功能信号。总接收模块设置于显示装置内，包括多个相互拼接的子接收模块，至少一所述子接收模块通过无线的方式接收所述信号源发出的第一功能信号，所述第一功能信号包含供所述子接收模块执行的功能指令。\n\n[0005]可选的，每一个子接收模块均通过无线的方式接收所述信号源发出的第一功能信号。\n\n[0006]可选的，所述多个子接收模块被分组成若干子接收模块组，所述信号源发出的第一功能信号被发送至各个子接收模块组中并在每个子接收模块组内子接收模块间传递。\n\n[0007]可选的，所述显示系统还包括拆分模块。拆分模块设置于显示装置外，用于接收信号源发出的第一功能信号，并将第一功能信号拆分后分发至各个对应的子接收模块中。\n\n[0008]可选的，所述总接收模块还包括子分发模块。子分发模块与所述子接收模块相互拼接，用于接收信号源的第一功能信号，并将第一功能信号拆分后分发至各个对应的子接收模块中。\n\n[0009]可选的，所述子分发模块包括第一收发单元，所述显示系统还包括设置于设备外的功能模块，所述功能模块包括第二收发单元和执行单元，所述第二收发单元用于接收所述第一收发单元发送的第二功能信号，所述第二功能信号包含供所述执行单元执行的功能指令。\n\n[0010]可选的，所述子接收模块包括接收单元以及功能单元。接收单元用于接收与所述子接收模块对应的第一功能信号。功能单元与所述接收单元电连接，用于执行所述第一功能信号内的功能指令。\n\n[0011]可选的，所述接收单元包括铺设于所述显示装置的面板上的呈网格状的网格天线，所述网格天线的每个网格中至少容纳有一个所述功能单元。\n\n[0012]可选的，所述功能单元包括微型发光二极管。\n\n[0013]可选的，所述接收单元还包括通信线圈，所述通信线圈除用于接收第一功能信号外，还用于与外部设备进行近场通信。\n\n[0014]可选的，所述总接收模块还包括无线充电线圈，所述无线充电线圈与各子接收模块电连接。\n\n[0015]本申请实施例中，通过使显示系统中各子模块采取无线通信的方式接收各种功能信号，使得显示装置内的数据走线被取消掉，简化了显示装置的结构，解决了现有技术中采用SOP技术的显示装置制造难度大的技术问题，同时也保证了各子模块的数据传输效率。\n\n附图说明\n\n[0016]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0017]图1是本申请显示系统的一实施例的信息传输示意图。\n\n[0018]图2是图1示出的显示系统显示装置的一实施例的结构示意图。\n\n[0019]图3是图1示出的显示系统显示装置的另一实施例的结构示意图。\n\n[0020]图4是图1示出的显示系统外部装置的一实施例的结构示意图。\n\n[0021]图5是图2和图3示出的显示装置内总接收模块第一实施例的信息传输示意图。\n\n[0022]图6是图2和图3示出的显示装置内子接收模块第一实施例的结构示意图。\n\n[0023]图7是图2和图3示出的显示装置内子接收模块第二实施例的结构示意图。\n\n[0024]图8是图2和图3示出的显示装置内子接收模块第三实施例的结构示意图。\n\n[0025]图9是图2和图3示出的显示装置内子接收模块第四实施例的结构示意图。\n\n[0026]图10是图2和图3示出的显示装置内子接收模块第五实施例的结构示意图。\n\n[0027]图11是图2和图3示出的显示装置内子接收模块第六实施例的结构示意图。\n\n[0028]图12是图2和图3示出的显示装置内总接收模块第二实施例的信息传输示意图。\n\n[0029]图13是图12示出的显示装置内一实施例的功能模块与子分发模块间的信息传输示意图。\n\n[0030]图14是图2和图3示出的显示装置内总接收模块第三实施例的信息传输示意图。\n\n[0031]附图标记说明：\n\n[0032]1、显示装置；2、外部装置；3、信号源；11、面板；12、总接收模块；13、充电线圈；22、功能模块；23、拆分模块；10、子接收模块组；100、子接收模块；300、子分发模块；110、接收单元；120、功能单元；130、发送单元；910、第一功能信号；920、第二功能信号；911、子信号；111、网格天线；121、微型发光二极管；1111、网格；11111、八边形网格；11112、菱形网格；1211、红光二级管；1212、绿光二级管；1213、蓝光二极管；1214、白光二级管；310、接收单元；320、功能单元；330、分发单元；340、第一收发单元；210、第二收发单元；220、执行单元；230、获取单元；240、拆分单元。\n\n具体实施方式\n\n[0033]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0034]本申请实施例提供一种显示系统，请参阅图1，该显示系统包括显示装置1、与显示装置1电信号连接的外部装置2、向显示装置1发送第一功能信号910的信号源3，该显示装置1可以安装于各种具有显示功能的产品中。例如，电子产品可以是智能终端、笔记本电脑、摄影设备、可穿戴设备、电子秤、车载显示器以及电视机等。该外部设备可以是机顶盒、路由器等。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0035]信号源3用于发出第一功能信号910，其可以位于显示装置1内也可以位于外部装置2内，也可以位于其他位置，本申请在此不做限定。\n\n[0036]请结合参阅图2，该显示装置1包括面板11以及安装于面板11上的总接收模块12，总接收模块12包括多个相互拼接的子接收模块100。每一子接收模块100均通过无线的方式接收信号源3发出的第一功能信号910，该第一功能信号910包含供子接收模块100执行的功能指令。\n\n[0037]请结合参阅图4，外部装置2可以包括功能模块22以及拆分模块23。\n\n[0038]请结合参阅图5，在本申请的一个实施例中，上述的多个子接收模块100被分组呈若干子接收模块组10，每个子接收模块组10的子接收模块100的数量是相等的。每个子接收模块组10中的子接收模块100均按照一列、一行或者一组矩阵的形式排布于面板11上。每个子接收模块100均包括接收单元110、发送单元130以及功能单元120。信号源3向各子接收模块组10发送第一功能信号910，各子接收模块组10中对应的子接收模块100通过接收单元110接收该第一功能信号910，并将该第一功能信号910通过发送单元130转发至组内其他子接收模块100的接收单元110，实现该第一功能信号910在每个子接收模块组10内子接收模块100间的传递。传递的具体方式可以是接收到第一功能信号910的子接收模块100将该第一功能信号910通过发送单元130直接发送至组内其他子接收模块100的接收单元110，也可以是接收到第一功能信号910的子接收模块100将该第一功能信号910通过发送单元130发送至组内与其相邻的子接收模块100的接收单元110，通过级传的方式完成第一功能信号910的传输。在接收到第一功能信号910后，各子接收模块100的功能单元120执行该第一功能信号910内的功能指令。\n\n[0039]在本申请的一些实施例中，上述的接收单元110可以是通信线圈以及微带天线。当接收单元110为通信线圈时，其还用于与外部设备进行近场通信。\n\n[0040]请结合参阅图3，总接收模块12还包括无线充电线圈13，该无线充电线圈13覆盖于各子接收模块100远离面板11的一面，并与各子接收模块100电连接，以向总接收模块12内的各子接收模块100提供电能。\n\n[0041]在本申请的一个实施例中，请结合参阅图6至图11，上述的子接收模块100为显示模块，上述的接收单元110包括铺设于所述显示装置1的面板11上的呈网格1111状的网格天线111，上述的功能单元120包括微型发光二极管121。网格天线111的每个网格1111中至少容纳有一个微型发光二极管121。每个微型发光二极管121均与网格天线111电信号连接，网格天线111接收第一功能信号910后传递至微型发光二极管121处，使得微型发光二极管121根据第一功能信号910开启或熄灭。\n\n[0042]其中，上述网格天线111的网格1111可以是矩形、菱形、六边形等多边形及其组合。\n\n[0043]当网格天线111的每个网格1111中容纳一个微型发光二极管121时，每个微型发光二极管121均构成显示模块的一个亚像素。\n\n[0044]在本申请的一个实施例中，请结合参阅图6，网格天线111的网格1111为矩形，每个网格天线111的网格1111中容纳有一个微型发光二极管121，每两相邻网格1111内的微型发光二级管的发光颜色不同，每个网格1111相对两侧的网格1111内的微型发光二级管的发光颜色也不同。上述排布方式排布紧密，可以有效提高单位面积内的分辨率，提升显示模块的显示效果。\n\n[0045]在本申请的另一个实施例中，请结合参阅图7，网格天线111的网格1111为菱形，每个网格1111中容纳有一个微型发光二极管121。每四个网格1111构成一个网格组，该网格组可以呈一斜列组，也可以呈一个菱形组，该网格组中的网格1111内依次设有红光二级管1211、绿光二级管1212、蓝光二极管1213以及白光二级管1214，即网格1111组内的每个网格1111均构成显示模块的一个亚像素，每个网格1111组内的网格1111共同构成一个像素。上述排布方式不仅排布紧密，可以有效提高单位面积内的分辨率，还提升了显示模块的亮度，使得显示模块呈现色彩更丰富，提升了显示模块的显示效果。\n\n[0046]在本申请的又一个实施例中，请结合参阅图8，网格天线111的网格1111为菱形和八边形的组合，每个八边形网格11111中均容纳有一个微型发光二极管121，而菱形网格11112中则不容纳微型发光二极管121。每两相邻网格1111内的微型发光二级管的发光颜色不同，每个网格1111相对两侧的网格1111内的微型发光二级管的发光颜色也不同。上述排布方式可缩减单位面积内网格天线111的长度，并保证网格天线111的信号性能。\n\n[0047]当线的每个网格1111中容纳多个微型发光二极管121时，每个网格1111中所有微型发光二极管121共同构成显示模块的一个像素。\n\n[0048]在本申请的一个实施例中，请结合参阅图9，网格天线111的网格1111为长条形，每个网格天线111的网格1111中容纳有三个微型发光二极管121，依次按照红光二级管1211、绿光二级管1212、蓝光二极管1213成行间隔排列。网格天线111接收第一功能信号910后传递至每个网格1111的微型发光二极管121处，使得该网格1111内的微型发光二极管121根据第一功能信号910开启或熄灭，达到一个像素点的控制效果。该排布方式可以进一步提升微型发光二极管121排布的紧密程度，可以进一步有效提高单位面积内的分辨率，从而提升显示模块的显示效果。同时，该在一个网格天线111的网格1111内容纳多个微型发光二极管121也有利于节省网格天线111的用料，进而降低制造成本。\n\n[0049]在本申请的另一个实施例中，请结合参阅图10，网格天线111的网格1111为方形，每个网格天线111的网格1111中容纳有四个微型发光二级管，依次按照红光二级管1211、绿光二级管1212、蓝光二极管1213、白光二级光从上到下、由左自右成矩形阵列排列。上述排布方式使得每个网格1111内的微型发光二级管尽量聚拢在一起，使得其构成的像素的亚像素排布更紧密，不仅可以有效提高单位面积内的分辨率，还提升了显示模块的亮度，使得显示模块呈现色彩更丰富，同时也提升了显示模块的显示效果。\n\n[0050]在本申请的又一个实施例中，请结合参阅图11，网格天线111的网格1111为菱形，每个网格天线111的网格1111中容纳有四个微型发光二级管，其包括一红光二级管1211、一蓝光二极管1213以及两绿光二级管1212，红光二级管1211和蓝光二级管等大，并都大于两绿光二级管1212。两绿光二级管1212分别设置于网格天线111的网格1111内靠近两锐角的区域，红光二级管1211和蓝光二级管分别设置于网格天线111的网格1111内靠近两钝角的区域，上述排布方式使得每个网格1111内的微型发光二级管尽量聚拢在一起，使得其构成的像素的亚像素排布更紧密，不仅可以有效提高单位面积内的分辨率，保证了显示的细腻程度，同时也提升了显示模块的显示效果。\n\n[0051]在本申请的另一实施例中，请结合参阅图12，上述的总接收模块12除包括子接收模块100外，还包括子分发模块300。子分发模块300与子接收模块100相互拼接，用于接收信号源3的第一功能信号910，并将第一功能信号910拆分后分发至各个对应的子接收模块100中。在本实施例中，每个子接收模块100均包括接收单元110以及功能单元120。而子分发模块300除了包括接收单元310以及功能单元320外，还包括分发单元330。\n\n[0052]信号源3向子分发模块300发送第一功能信号910，子分发模块300的接收单元310接收该第一功能信号910，并将该第一功能信号910通过分发单元330拆分成多个子信号911后发送至总接收模块12内的对应的子接收模块100的接收单元110，完成第一功能信号910的传递。其具体方式可以是，子分发模块300在通过接收单元310接收到第一功能信号910后，将第一功能信号910拆分成多个子信号911后发送至各子接收模块100处，每个子信号911均带有不同的功能指令，并与特定的信号标记关联。各子接收模块100的接收单元110根据信号标记收取其对应的子信号911。在接收到第一功能信号910后，子分发模块300的功能单元320和各子接收模块100的功能单元120执行该第一功能信号910内的功能指令。\n\n[0053]例如，在一个实施例中，总接收模块12为扫描模块，则子分发模块300和子接收模块100即均为扫描子模块，其均执行扫描任务，其区别仅在于子分发模块300内设有承担分发任务的分发单元330。在本申请的一个实施例中，上述的扫描模块中均设有分发单元330，以便在其中一个扫描模块中的分发单元330失效的情况下快速切换。\n\n[0054]在本申请的一实施例中，请结合参阅图13，外部装置2包括功能模块22，功能模块22包括第二收发单元210和执行单元220。子分发模块300对应还包括第一收发单元340。功能模块22的第二收发单元210用于接收第一收发单元340发送的第二功能信号920，第二功能信号920包含供执行单元220执行的功能指令，该功能指令为总接收模块12无法执行的指令。在本申请的一具体实施例中，第一收发单元340和第二收发单元210均为WIFI单元，子分发模块300通过WIFI通信，控制功能模块22执行部分功能指令。\n\n[0055]在本申请的又一实施例中，请结合参阅图14，外部装置2包括拆分模块23。拆分模块23用于接收信号源3发出的第一功能信号910，并将第一功能信号910拆分后分发至各个对应的子接收模块100中。在本实施例中，每个子接收模块100均包括接收单元110以及功能单元120。拆分模块23包括获取单元230以及拆分单元240。\n\n[0056]信号源3向拆分模块23发送第一功能信号910，拆分模块23的接收单元110接收该第一功能信号910，并将该第一功能信号910通过拆分单元240拆分成多个子信号911后，发送至总接收模块12内的对应的子接收模块100的接收单元110，完成第一功能信号910的传递。其具体方式可以是，拆分模块23在通过获取单元230接收到第一功能信号910后，将第一功能信号910拆分成多个子信号911后发送至各子接收模块100处，每个子信号911均带有不同的功能指令，并与特定的信号标记关联。各子接收模块100的接收单元110根据信号标记收取其对应的子信号911。在接收到第一功能信号910后，各子接收模块100的功能单元120执行该第一功能信号910内的功能指令。\n\n[0057]例如，在一个实施例中，总接收模块12为音频模块，子接收模块100即均为音频子模块，其均执行音频处理任务。外部设备为路由器，其获取到通过网线传输的第一功能信号910后，将其拆分为不同的子信号911，然后发送至各子接收模块100处，子接收模块100即进行音频处理任务。\n\n[0058]在本申请中，子接收模块100通过无线通信的方式与信号源3、子分发模块300以及拆分模块23进行数据传输，子分发模块300也通过无线通信的方式与信号源3以及功能模块22进行数据传输，使得显示装置内的数据走线被取消掉，简化了显示装置的结构，解决了现有技术中采用SOP技术的显示装置制造难度大的技术问题，同时也保证了各子模块的数据传输效率。\n\n[0059]以上对本申请实施例所提供的一种显示系统进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10978, 24032, '技术领域\n\n[0001]本发明涉及显示技术领域，特别涉及一种显示面板、其制作方法及显示装置。\n\n背景技术\n\n[0002]作为新兴显示技术，微发光二极管(Micro LED)显示相较于LCD(液晶显示)、OLED(有机发光二极管)显示有较多优势，如较低的功耗，较高的色域，较快的相应速率等，对封装水氧隔绝要求不高，被视为较有发展前景的一种显示技术。\n\n[0003]但是Micro LED显示还有诸多技术难点需要克服，如在大尺寸显示上远离VDD(高电位走线)/VSS(低电位走线)输入端的显示区域由于走线电阻导致VDD发生压降(IRdrop)、VSS压升，造成微发光二极管两端压差降低，亮度下降，整面亮度不均。因此，改善走线电阻引起的电流下降对micro LED大尺寸化至关重要。同时VDD/VSS作为输电线(powerline)，电流密度较大，电流热效应过大则可能造成二极管/晶体管器件特性漂移、走线过载、RA(Reliability Analysis，可靠性分析)特性恶化。\n\n发明内容\n\n[0004]本发明目的在于，解决现有显示面板显示区域亮度不均的问题。\n\n[0005]为实现上述目的，本发明提供一种显示面板，包括：显示基板和覆盖于所述显示基板上方的盖板，所述显示基板包括：衬底基板；形成于所述衬底基板上的薄膜晶体管层；间隔设置于所述薄膜晶体管层上的高电位连接垫、低电位连接垫及发光元件焊垫；以及设置于所述发光元件焊垫上的发光元件；所述盖板包括：高电位走线和低电位走线间隔设置于所述盖板朝向所述显示基板的一面；第一连接垫，设置于所述高电位走线下表面；以及第二连接垫，设置于所述低电位走线下表面，其中，所述第一连接垫与所述第二连接垫被配置为在所述盖板对合于所述显示基板时，所述第一连接垫对位于所述高电位连接垫且与所述高电位连接垫电连接，所述第二连接垫对位于所述低电位连接垫且与所述低电位连接垫电连接。\n\n[0006]可选的，所述薄膜晶体管层中包含多个像素驱动电路，所述显示基板定义有多个阵列分布的像素区，每个像素区包括至少一个所述发光元件、一个所述像素驱动电路、一个所述高电位连接垫、以及一个所述低电位连接垫，其中，所述高电位连接垫被配置为提供所述像素驱动电路高电平，所述低电位连接垫被配置为提供所述像素驱动电路低电平。\n\n[0007]可选的，所述高电位走线被配置为提供所述高电平，所述低电位走线被配置为提供所述低电平。\n\n[0008]可选的，每个所述像素驱动电路包括至少一个驱动薄膜晶体管，所述驱动薄膜晶体管被配置为驱动所述发光元件发光。\n\n[0009]可选的，所述高电位走线和所述低电位走线的材质包括铜或铝，且所述高电位走线和所述低电位走线对位于所述多个像素区之间的间隔位置。\n\n[0010]可选的，所述发光元件包括微发光二极管。\n\n[0011]可选的，所述高电位连接垫与所述第一连接垫之间设置有导电膏，所述低电位连接垫与所述第二连接垫之间设置有导电膏。\n\n[0012]可选的，所述显示面板还包括填充于所述显示基板和所述盖板之间的光学胶。\n\n[0013]为实现上述目的，本发明还提供一种显示装置，包括如前所述的显示面板以及控制单元，所述控制单元用以提供所述高电平与所述低电平。\n\n[0014]为实现上述目的，本发明还提供一种显示面板的制备方法，包括：\n\n[0015]提供显示底基板；\n\n[0016]在所述显示基板一面形成薄膜晶体管层；\n\n[0017]在所述薄膜晶体管层上间隔形成高电位连接垫、发光元件焊垫和低电位连接垫；\n\n[0018]转移微发光二极管至所述发光元件焊垫上：\n\n[0019]提供盖板；\n\n[0020]在所述盖板一面上形成间隔排布的高电位走线和低电位走线；\n\n[0021]在所述高电位走线上形成第一连接垫，在所述低电位走线形成第二连接垫；\n\n[0022]将所述盖板对合于所述显示基板，其中所述第一连接垫与所述第二连接垫面向所述显示基板且所述第一连接垫与所述高电位连接垫对接，所述第二连接垫与所述低电位连接垫对接。\n\n[0023]本发明的有益效果在于，本发明提供的显示面板，将VDD走线和VSS走线分别分成两个部分，即，将VDD走线分成高电位连接垫和高电位走线两部分，将VSS走线分成低电位连接垫和低电位走线两部分，将高电位走线和低电位走线布置于盖板上，在显示基板上仅保留高电位连接垫和低电位连接垫，将高电位走线和高电位连接垫通过第一连接垫形成电连接，将低电位走线和低电位连接垫通过第二连接垫形成电连接，从而将走线部分从显示基板上分离，改善因为压降导致的显示区域亮度不均的问题，提高信赖性，提升显示品味，并可增加显示基板的设计、结构以及制程余地。\n\n附图说明\n\n[0024]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0025]图1a是本发明一实施例中的显示面板的结构示意图；\n\n[0026]图1b是本发明一实施例中的显示面板的结构示意图；\n\n[0027]图1c是本发明一实施例中的显示装置的结构示意图；\n\n[0028]图2是本发明一实施例中的像素驱动电路的等效电路图；\n\n[0029]图3是本发明另一实施例中像素驱动电路的等效电路图；\n\n[0030]图4是本发明一实施例中的显示面板的制作流程图；\n\n[0031]图5a～图5e是本发明一实施例中的显示面板的制作方法中盖板制作的结构示意图；\n\n[0032]图中部件编号如下：\n\n[0033]1、显示装置，10、显示面板，100、显示基板，110、衬底基板，120、缓冲层，130、层间介质层，140、第一保护层，150、驱动薄膜晶体管，151、有源层，52、栅极绝缘层，153、栅极，154、漏极，155、源极，158、接触电极，160、遮光层，171、第一导电层，172、第二导电层，1721/1722、发光元件焊垫，173、第三导电层；\n\n[0034]20、控制单元，200、盖板，210、底板，220、第二保护层，221、第一通孔，222、第二通孔，230、负性光阻层，240、金属膜层；\n\n[0035]310、高电位输电线路，311、高电位连接垫，312、第一连接垫，313、高电位走线，320、低电位输电线路，321、低电位连接垫，322、第二连接垫，323、低电位走线；\n\n[0036]400、发光元件，410、第一电极，420、第二电极；\n\n[0037]TL、薄膜晶体管层，PD、像素驱动电路，PA、像素区，IA、间隔位置，FC、软性电路板。\n\n具体实施方式\n\n[0038]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0039]所述显示面板将VDD走线分成高电位连接垫和高电位走线两部分，将VSS走线分成低电位连接垫和低电位走线两部分，将高电位走线和低电位走线布置于盖板上，在显示基板上仅保留高电位连接垫和低电位连接垫，将高电位走线和高电位连接垫通过第一连接垫形成电性连接，将低电位走线和低电位连接垫通过第二连接垫形成电性连接，从而将走线部分从显示基板上分离，改善因为压降导致的显示区域亮度不均的问题，提高信赖性，提升显示品味，并可增加显示基板的设计、结构以及制程余地。作为典型应用，所述显示面板可被应用于显示装置中，例如Mini LED显示器或Micro LED显示器。\n\n[0040]本发明的一个实施例中，参照图1a，显示面板10包括显示基板100和盖板200。盖板200覆盖于显示基板100上方，显示基板100包括衬底基板110、形成于所述衬底基板110上的薄膜晶体管层TL、间隔设置于薄膜晶体管层TL上的高电位连接垫311、低电位连接垫321和发光元件焊垫1721、1722以及发光元件400设置于发光元件焊垫1721、1722上。盖板200朝向所述显示基板100的一面间隔设置有高电位走线313和低电位走线323，高电位走线313下表面(朝向显示基板100一面)设置有第一连接垫312，低电位走线323下表面设置有第二连接垫322。盖板200对合于显示基板100，第一连接垫312对位于高电位连接垫311并与高电位连接垫311电连接；第二连接垫322对位于低电位连接垫321并与低电位连接垫321电连接。其中，所述低电位连接垫321一部分与第二连接垫322连接，一部分与发光元件400连接，与发光元件400连接的低电位连接垫321部分为发光元件焊垫1722。\n\n[0041]所述薄膜晶体管层TL中包含多个像素驱动电路PD，所述显示基板100定义有多个阵列分布的像素区PA，每个像素区PA包括至少一个所述发光元件400、一个所述像素驱动电路PD、一个所述高电位连接垫311、以及一个所述低电位连接垫321，其中，所述高电位连接垫311被配置为提供所述像素驱动电路高电平VDD，所述低电位连接垫321被配置为提供所述像素驱动电路低电平VSS。\n\n[0042]参照图1b，所述高电位走线313被配置为提供所述高电平VDD，所述低电位走线323被配置为提供所述低电平VSS。具体的，高电位连接垫311、第一连接垫312和高电位走线313形成高电位输电线路310用以提供所述高电平VDD。低电位连接垫321、第二连接垫322和低电位走线323形成低电位输电线路320用以提供所述低电平VSS。\n\n[0043]每个所述像素驱动电路PD包括至少一个驱动薄膜晶体管150，所述驱动薄膜晶体管150被配置为驱动所述发光元件400发光。所述驱动薄膜晶体管150可以为顶栅结构也可以为底栅结构，本申请实施例对此不作任何限定，需要说明的是，本实施例是以驱动薄膜晶体管150为顶栅结构为例进行说明的。\n\n[0044]所述高电位走线313和所述低电位走线323的材质包括铜或铝。参照图1a，所述高电位走线313和所述低电位走线323对位于所述多个像素区PA之间的间隔位置IA。具体的，所述高电位走线313和所述低电位走线323从所述间隔位置IA延伸突出至所述像素区PA中以便于设置第一连接垫312和第二连接垫322。\n\n[0045]所述发光元件400包括微发光二极管(Micro LED)或迷你发光二极管(Mini LED)。\n\n[0046]所述高电位连接垫311与所述第一连接垫312之间以及所述低电位连接垫321与所述第二连接垫322之间可以设置锡膏或锡球(图中未示出)，使用焊接法进行电连接。或是所述高电位连接垫311与所述第一连接垫312之间设置有导电膏(图中未示出)，所述低电位连接垫321与所述第二连接垫322之间设置有导电膏。导电膏的设计可保证电连接的稳定性，保证电流传输的稳定性。\n\n[0047]显示基板100和所述盖板200之间填充有光学胶(图中未示出)，除了提高所述发光元件400的光取出率，避免水气入侵到发光元件400或像素驱动电路PD，也可保持显示基板100和所述盖板200之间的距离，避免所述高电位连接垫311与所述第一连接垫312之间以及所述低电位连接垫321与所述第二连接垫322之间的导电连接脱落。\n\n[0048]参照图1c，本发明还提供一种显示装置1，包括如前所述的显示面板10以及控制单元20，所述控制单元20用以提供所述高电平VDD与所述低电平VSS。\n\n[0049]具体的，所述控制单元20透过软性电路板FC连接至所述显示面板10的所述高电位走线313與所述低电位走线323，並向所述高电位走线313提供所述高电平VDD，向所述低电位走线323提供所述低电平VSS。\n\n[0050]参照图1b，在本实施例中，所述衬底基板100还包括设置于衬底基板110朝向盖板200一面的缓冲层120，设置于缓冲层120背离衬底基板110一面的层间介质层130，第一保护层140设置于层间介质层130背离缓冲层120一面，所述衬底基板110朝向盖板200一面还设置有遮光层160。所述盖板200还包括底板210，底板210朝向显示基板100一面设置有第二保护层220。\n\n[0051]所述驱动薄膜晶体管150包括有源层151、栅极绝缘层152、栅极153、漏极154和源极155。所述驱动薄膜晶体管150可以为顶栅结构也可以为底栅结构，本申请实施例对此不作任何限定。接触电极158示意像素驱动电路PD的其他线路或换线层线路，本申请实施例对此不作任何限定。在本实施例中，所述像素驱动电路PD可参照图2或图3。图2或图3的像素驱动电路仅为一示例，本申请实施例对此不作任何限定。像素驱动电路中的高电平VDD透过高电位输电线路310提供，低电平VSS透过低电位输电线路320提供。在本实施例中，高电位连接垫311和低电位连接垫321间隔排布于第一保护层140背离层间介质层130一面，高电位走线313和低电位走线323间隔设置于底板210朝向显示基板100一面。\n\n[0052]作为一种改进，参照图1b，所述第一保护层140背离所述层间介质层130一面设置有间隔排布的第一导电层171、第二导电层172和第三导电层173，发光元件焊垫1721设置于第二导电层172背离所述第一保护层140一面，在本实施例中，高电位连接垫311通过第一导电层171与驱动薄膜晶体管150的漏极154电性连接，低电位连接垫321通过第三导电层173与接触电极158电性连接，发光元件400的第二电极420通过发光元件焊垫1721、第二导电层172与驱动薄膜晶体管150的漏极154电连接，发光元件400的第一电极410透过发光元件焊垫1722、第三导电层173与接触电极158电连接。第一保护层140包覆所述漏极154、源极155和接触电极158。\n\n[0053]其中，高电位连接垫311、低电位连接垫321以及发光元件焊垫1721位于同一层。所述第一导电层171、第二导电层172和第三导电层173均为金属材质。所述发光元件400的第一电极410为阴极，第二电极420为阳极。\n\n[0054]第一连接垫312与第二连接垫322的高度相同，均高于发光元件400的高度。另一种方式中，第一连接垫312与第二连接垫322的高度可以不同，例如第一连接垫312的高度高于第二连接垫322的高度，或者，第一连接垫312的高度低于第二连接垫322的高度。但只需要满足高度较矮的一个的高度高于发光元件400的高度这个条件即可。从而使得当盖板200与显示基板100对接组装时，避免盖板200压到发光元件400。所述发光元件400位于第一连接垫312与第二连接垫322之间，即，发光元件400在底板210上的正投影位于高电位走线313与低电位走线323之间。\n\n[0055]其中，参照图1b，在本实施例中，第一连接垫312与高电位走线313连接端的端面面积大于第一连接垫312与高电位连接垫311连接端的端面面积，形成第一连接垫312的倒梯形截面形状；第二连接垫322与低电位走线323连接端的端面面积大于第二连接垫322与低电位连接垫321连接端的端面面积，形成第二连接垫322的倒梯形截面形状。作为另一种可行方式，第一连接垫312与高电位走线313连接端的端面面积小于第一连接垫312与高电位连接垫311连接端的端面面积，第二连接垫322与低电位走线323连接端的端面面积小于第二连接垫322与低电位连接垫321连接端的端面面积。\n\n[0056]本发明通过将高电位走线313在盖板200的底板210上走线，高电位连接垫311设置于显示基板100上，高电位走线313与高电位连接垫311通过第一连接垫312电连接导通，同理，将低电位走线323在盖板200的底板210上走线，低电位连接垫321设置于显示基板100上，低电位走线323与低电位连接垫321通过第二连接垫322电连接导通。由于将高电位输电线路310的走线部分和低电位输电线路320的走线部分转移至盖板200上，可以選用較粗較厚的走線，減少了现有因为在显示基板100上走线空間不足，導致走線過細，电阻過高以致压降過大的问题，保证发光元件400发光的均匀性，保证显示面板显示区域亮度的均匀性。而且，由于将高电位输电线路310的走线部分和低电位输电线路320的走线部分转移至盖板200上，可增加显示基板100上的其他结构以及制程余地(margin)。\n\n[0057]参照图1a和图4，本发明还提供所述显示面板的制作方法，包括如下步骤：\n\n[0058]S110、提供显示基板100；\n\n[0059]S120、在所述显示基板100一面形成薄膜晶体管层TL；\n\n[0060]S130、在所述薄膜晶体管层TL上间隔形成高电位连接垫311、发光元件焊垫1721/1722和低电位连接垫321；\n\n[0061]S140、转移发光元件400至所述发光元件焊垫1721/1722上；\n\n[0062]S150、提供盖板200；\n\n[0063]S160、在所述盖板200一面上形成间隔排布的高电位走线313和低电位走线323；\n\n[0064]S170、在所述高电位走线313上形成第一连接垫312，在所述低电位走线323形成第二连接垫322；\n\n[0065]S180、将所述盖板200对合于所述显示基板100，其中所述第一连接垫312与所述第二连接垫322面向所述显示基板100且所述第一连接垫312与所述高电位连接垫311对接，所述第二连接垫322与所述低电位连接垫321对接。\n\n[0066]其中，所述驱动薄膜晶体管150的漏极154通过过孔与有源层151连接，源极155通过过孔与有源层151连接。\n\n[0067]其中，第一保护层140背离所述层间介质层130一面间隔形成有第一导电层171、第二导电层172和第三导电层173，第一导电层171通过过孔沉积至源极155并与源漏极155连接，第二导电层172通过过孔沉积至漏极154并与漏极154连接，第三导电层173通过过孔沉积至接触电极158并与接触电极158连接，第二导电层172背离第一保护层140一面形成有发光元件焊垫1721；第三导电层173背离第一保护层140一面形成有发光元件焊垫1722及低电位连接垫321。\n\n[0068]在本实施例中，发光元件400的第一电极410与发光元件焊垫1722电性连接，第二电极420与驱动薄膜晶体管150的漏极154电性连接。\n\n[0069]具体的，发光元件400的第二电极420通过发光元件焊垫1721和第二导电层172与驱动薄膜晶体管150的漏极154电性连接。\n\n[0070]在本实施例中，盖板200的形成步骤如下：(参照图5a～5e)\n\n[0071]提供底板210；\n\n[0072]在底板210一面上进行金属成膜及图形化，形成间隔排布的高电位走线313和低电位走线323；\n\n[0073]在形成高电位走线313和低电位走线323的底板210表面形成第二保护层220；\n\n[0074]图形化第二保护层220以开设第一通孔221及第二通孔222，其中第一通孔221暴露至少部分高电位走线313，第二通孔222暴露至少部分低电位走线323；\n\n[0075]在第二保护层220背离底板210一面涂布负性光阻并图形化，形成负性光阻层230；\n\n[0076]在负性光阻层230背离第二保护层220一面蒸镀形成金属膜层240，部分金属膜层240通过第一通孔221沉积至高电位走线313形成第一连接垫312，部分金属膜层240通过第二通孔222沉积至低电位走线323形成第二连接垫322；\n\n[0077]去除负性光阻层230及位于负性光阻层230上的金属膜层240。\n\n[0078]其中，盖板200的底板210采用透明材质，可为玻璃或PET或其他材料。高电位走线313和低电位走线323的走线工艺也可采用印刷、打印、厚膜PVD等方式实现低电阻设计。\n\n[0079]以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出多个改进和润饰，这些改进和润饰也应视为本发明的保护范围。', '技术领域\n\n[0001]本发明涉及显示技术领域，特别涉及一种显示面板、其制作方法及显示装置。\n\n背景技术\n\n[0002]作为新兴显示技术，微发光二极管(Micro LED)显示相较于LCD(液晶显示)、OLED(有机发光二极管)显示有较多优势，如较低的功耗，较高的色域，较快的相应速率等，对封装水氧隔绝要求不高，被视为较有发展前景的一种显示技术。\n\n[0003]但是Micro LED显示还有诸多技术难点需要克服，如在大尺寸显示上远离VDD(高电位走线)/VSS(低电位走线)输入端的显示区域由于走线电阻导致VDD发生压降(IRdrop)、VSS压升，造成微发光二极管两端压差降低，亮度下降，整面亮度不均。因此，改善走线电阻引起的电流下降对micro LED大尺寸化至关重要。同时VDD/VSS作为输电线(powerline)，电流密度较大，电流热效应过大则可能造成二极管/晶体管器件特性漂移、走线过载、RA(Reliability Analysis，可靠性分析)特性恶化。\n\n发明内容\n\n[0004]本发明目的在于，解决现有显示面板显示区域亮度不均的问题。\n\n[0005]为实现上述目的，本发明提供一种显示面板，包括：显示基板和覆盖于所述显示基板上方的盖板，所述显示基板包括：衬底基板；形成于所述衬底基板上的薄膜晶体管层；间隔设置于所述薄膜晶体管层上的高电位连接垫、低电位连接垫及发光元件焊垫；以及设置于所述发光元件焊垫上的发光元件；所述盖板包括：高电位走线和低电位走线间隔设置于所述盖板朝向所述显示基板的一面；第一连接垫，设置于所述高电位走线下表面；以及第二连接垫，设置于所述低电位走线下表面，其中，所述第一连接垫与所述第二连接垫被配置为在所述盖板对合于所述显示基板时，所述第一连接垫对位于所述高电位连接垫且与所述高电位连接垫电连接，所述第二连接垫对位于所述低电位连接垫且与所述低电位连接垫电连接。\n\n[0006]可选的，所述薄膜晶体管层中包含多个像素驱动电路，所述显示基板定义有多个阵列分布的像素区，每个像素区包括至少一个所述发光元件、一个所述像素驱动电路、一个所述高电位连接垫、以及一个所述低电位连接垫，其中，所述高电位连接垫被配置为提供所述像素驱动电路高电平，所述低电位连接垫被配置为提供所述像素驱动电路低电平。\n\n[0007]可选的，所述高电位走线被配置为提供所述高电平，所述低电位走线被配置为提供所述低电平。\n\n[0008]可选的，每个所述像素驱动电路包括至少一个驱动薄膜晶体管，所述驱动薄膜晶体管被配置为驱动所述发光元件发光。\n\n[0009]可选的，所述高电位走线和所述低电位走线的材质包括铜或铝，且所述高电位走线和所述低电位走线对位于所述多个像素区之间的间隔位置。\n\n[0010]可选的，所述发光元件包括微发光二极管。\n\n[0011]可选的，所述高电位连接垫与所述第一连接垫之间设置有导电膏，所述低电位连接垫与所述第二连接垫之间设置有导电膏。\n\n[0012]可选的，所述显示面板还包括填充于所述显示基板和所述盖板之间的光学胶。\n\n[0013]为实现上述目的，本发明还提供一种显示装置，包括如前所述的显示面板以及控制单元，所述控制单元用以提供所述高电平与所述低电平。\n\n[0014]为实现上述目的，本发明还提供一种显示面板的制备方法，包括：\n\n[0015]提供显示底基板；\n\n[0016]在所述显示基板一面形成薄膜晶体管层；\n\n[0017]在所述薄膜晶体管层上间隔形成高电位连接垫、发光元件焊垫和低电位连接垫；\n\n[0018]转移微发光二极管至所述发光元件焊垫上：\n\n[0019]提供盖板；\n\n[0020]在所述盖板一面上形成间隔排布的高电位走线和低电位走线；\n\n[0021]在所述高电位走线上形成第一连接垫，在所述低电位走线形成第二连接垫；\n\n[0022]将所述盖板对合于所述显示基板，其中所述第一连接垫与所述第二连接垫面向所述显示基板且所述第一连接垫与所述高电位连接垫对接，所述第二连接垫与所述低电位连接垫对接。\n\n[0023]本发明的有益效果在于，本发明提供的显示面板，将VDD走线和VSS走线分别分成两个部分，即，将VDD走线分成高电位连接垫和高电位走线两部分，将VSS走线分成低电位连接垫和低电位走线两部分，将高电位走线和低电位走线布置于盖板上，在显示基板上仅保留高电位连接垫和低电位连接垫，将高电位走线和高电位连接垫通过第一连接垫形成电连接，将低电位走线和低电位连接垫通过第二连接垫形成电连接，从而将走线部分从显示基板上分离，改善因为压降导致的显示区域亮度不均的问题，提高信赖性，提升显示品味，并可增加显示基板的设计、结构以及制程余地。\n\n附图说明\n\n[0024]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。\n\n[0025]图1a是本发明一实施例中的显示面板的结构示意图；\n\n[0026]图1b是本发明一实施例中的显示面板的结构示意图；\n\n[0027]图1c是本发明一实施例中的显示装置的结构示意图；\n\n[0028]图2是本发明一实施例中的像素驱动电路的等效电路图；\n\n[0029]图3是本发明另一实施例中像素驱动电路的等效电路图；\n\n[0030]图4是本发明一实施例中的显示面板的制作流程图；\n\n[0031]图5a～图5e是本发明一实施例中的显示面板的制作方法中盖板制作的结构示意图；\n\n[0032]图中部件编号如下：\n\n[0033]1、显示装置，10、显示面板，100、显示基板，110、衬底基板，120、缓冲层，130、层间介质层，140、第一保护层，150、驱动薄膜晶体管，151、有源层，52、栅极绝缘层，153、栅极，154、漏极，155、源极，158、接触电极，160、遮光层，171、第一导电层，172、第二导电层，1721/1722、发光元件焊垫，173、第三导电层；\n\n[0034]20、控制单元，200、盖板，210、底板，220、第二保护层，221、第一通孔，222、第二通孔，230、负性光阻层，240、金属膜层；\n\n[0035]310、高电位输电线路，311、高电位连接垫，312、第一连接垫，313、高电位走线，320、低电位输电线路，321、低电位连接垫，322、第二连接垫，323、低电位走线；\n\n[0036]400、发光元件，410、第一电极，420、第二电极；\n\n[0037]TL、薄膜晶体管层，PD、像素驱动电路，PA、像素区，IA、间隔位置，FC、软性电路板。\n\n具体实施方式\n\n[0038]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0039]所述显示面板将VDD走线分成高电位连接垫和高电位走线两部分，将VSS走线分成低电位连接垫和低电位走线两部分，将高电位走线和低电位走线布置于盖板上，在显示基板上仅保留高电位连接垫和低电位连接垫，将高电位走线和高电位连接垫通过第一连接垫形成电性连接，将低电位走线和低电位连接垫通过第二连接垫形成电性连接，从而将走线部分从显示基板上分离，改善因为压降导致的显示区域亮度不均的问题，提高信赖性，提升显示品味，并可增加显示基板的设计、结构以及制程余地。作为典型应用，所述显示面板可被应用于显示装置中，例如Mini LED显示器或Micro LED显示器。\n\n[0040]本发明的一个实施例中，参照图1a，显示面板10包括显示基板100和盖板200。盖板200覆盖于显示基板100上方，显示基板100包括衬底基板110、形成于所述衬底基板110上的薄膜晶体管层TL、间隔设置于薄膜晶体管层TL上的高电位连接垫311、低电位连接垫321和发光元件焊垫1721、1722以及发光元件400设置于发光元件焊垫1721、1722上。盖板200朝向所述显示基板100的一面间隔设置有高电位走线313和低电位走线323，高电位走线313下表面(朝向显示基板100一面)设置有第一连接垫312，低电位走线323下表面设置有第二连接垫322。盖板200对合于显示基板100，第一连接垫312对位于高电位连接垫311并与高电位连接垫311电连接；第二连接垫322对位于低电位连接垫321并与低电位连接垫321电连接。其中，所述低电位连接垫321一部分与第二连接垫322连接，一部分与发光元件400连接，与发光元件400连接的低电位连接垫321部分为发光元件焊垫1722。\n\n[0041]所述薄膜晶体管层TL中包含多个像素驱动电路PD，所述显示基板100定义有多个阵列分布的像素区PA，每个像素区PA包括至少一个所述发光元件400、一个所述像素驱动电路PD、一个所述高电位连接垫311、以及一个所述低电位连接垫321，其中，所述高电位连接垫311被配置为提供所述像素驱动电路高电平VDD，所述低电位连接垫321被配置为提供所述像素驱动电路低电平VSS。\n\n[0042]参照图1b，所述高电位走线313被配置为提供所述高电平VDD，所述低电位走线323被配置为提供所述低电平VSS。具体的，高电位连接垫311、第一连接垫312和高电位走线313形成高电位输电线路310用以提供所述高电平VDD。低电位连接垫321、第二连接垫322和低电位走线323形成低电位输电线路320用以提供所述低电平VSS。\n\n[0043]每个所述像素驱动电路PD包括至少一个驱动薄膜晶体管150，所述驱动薄膜晶体管150被配置为驱动所述发光元件400发光。所述驱动薄膜晶体管150可以为顶栅结构也可以为底栅结构，本申请实施例对此不作任何限定，需要说明的是，本实施例是以驱动薄膜晶体管150为顶栅结构为例进行说明的。\n\n[0044]所述高电位走线313和所述低电位走线323的材质包括铜或铝。参照图1a，所述高电位走线313和所述低电位走线323对位于所述多个像素区PA之间的间隔位置IA。具体的，所述高电位走线313和所述低电位走线323从所述间隔位置IA延伸突出至所述像素区PA中以便于设置第一连接垫312和第二连接垫322。\n\n[0045]所述发光元件400包括微发光二极管(Micro LED)或迷你发光二极管(Mini LED)。\n\n[0046]所述高电位连接垫311与所述第一连接垫312之间以及所述低电位连接垫321与所述第二连接垫322之间可以设置锡膏或锡球(图中未示出)，使用焊接法进行电连接。或是所述高电位连接垫311与所述第一连接垫312之间设置有导电膏(图中未示出)，所述低电位连接垫321与所述第二连接垫322之间设置有导电膏。导电膏的设计可保证电连接的稳定性，保证电流传输的稳定性。\n\n[0047]显示基板100和所述盖板200之间填充有光学胶(图中未示出)，除了提高所述发光元件400的光取出率，避免水气入侵到发光元件400或像素驱动电路PD，也可保持显示基板100和所述盖板200之间的距离，避免所述高电位连接垫311与所述第一连接垫312之间以及所述低电位连接垫321与所述第二连接垫322之间的导电连接脱落。\n\n[0048]参照图1c，本发明还提供一种显示装置1，包括如前所述的显示面板10以及控制单元20，所述控制单元20用以提供所述高电平VDD与所述低电平VSS。\n\n[0049]具体的，所述控制单元20透过软性电路板FC连接至所述显示面板10的所述高电位走线313與所述低电位走线323，並向所述高电位走线313提供所述高电平VDD，向所述低电位走线323提供所述低电平VSS。\n\n[0050]参照图1b，在本实施例中，所述衬底基板100还包括设置于衬底基板110朝向盖板200一面的缓冲层120，设置于缓冲层120背离衬底基板110一面的层间介质层130，第一保护层140设置于层间介质层130背离缓冲层120一面，所述衬底基板110朝向盖板200一面还设置有遮光层160。所述盖板200还包括底板210，底板210朝向显示基板100一面设置有第二保护层220。\n\n[0051]所述驱动薄膜晶体管150包括有源层151、栅极绝缘层152、栅极153、漏极154和源极155。所述驱动薄膜晶体管150可以为顶栅结构也可以为底栅结构，本申请实施例对此不作任何限定。接触电极158示意像素驱动电路PD的其他线路或换线层线路，本申请实施例对此不作任何限定。在本实施例中，所述像素驱动电路PD可参照图2或图3。图2或图3的像素驱动电路仅为一示例，本申请实施例对此不作任何限定。像素驱动电路中的高电平VDD透过高电位输电线路310提供，低电平VSS透过低电位输电线路320提供。在本实施例中，高电位连接垫311和低电位连接垫321间隔排布于第一保护层140背离层间介质层130一面，高电位走线313和低电位走线323间隔设置于底板210朝向显示基板100一面。\n\n[0052]作为一种改进，参照图1b，所述第一保护层140背离所述层间介质层130一面设置有间隔排布的第一导电层171、第二导电层172和第三导电层173，发光元件焊垫1721设置于第二导电层172背离所述第一保护层140一面，在本实施例中，高电位连接垫311通过第一导电层171与驱动薄膜晶体管150的漏极154电性连接，低电位连接垫321通过第三导电层173与接触电极158电性连接，发光元件400的第二电极420通过发光元件焊垫1721、第二导电层172与驱动薄膜晶体管150的漏极154电连接，发光元件400的第一电极410透过发光元件焊垫1722、第三导电层173与接触电极158电连接。第一保护层140包覆所述漏极154、源极155和接触电极158。\n\n[0053]其中，高电位连接垫311、低电位连接垫321以及发光元件焊垫1721位于同一层。所述第一导电层171、第二导电层172和第三导电层173均为金属材质。所述发光元件400的第一电极410为阴极，第二电极420为阳极。\n\n[0054]第一连接垫312与第二连接垫322的高度相同，均高于发光元件400的高度。另一种方式中，第一连接垫312与第二连接垫322的高度可以不同，例如第一连接垫312的高度高于第二连接垫322的高度，或者，第一连接垫312的高度低于第二连接垫322的高度。但只需要满足高度较矮的一个的高度高于发光元件400的高度这个条件即可。从而使得当盖板200与显示基板100对接组装时，避免盖板200压到发光元件400。所述发光元件400位于第一连接垫312与第二连接垫322之间，即，发光元件400在底板210上的正投影位于高电位走线313与低电位走线323之间。\n\n[0055]其中，参照图1b，在本实施例中，第一连接垫312与高电位走线313连接端的端面面积大于第一连接垫312与高电位连接垫311连接端的端面面积，形成第一连接垫312的倒梯形截面形状；第二连接垫322与低电位走线323连接端的端面面积大于第二连接垫322与低电位连接垫321连接端的端面面积，形成第二连接垫322的倒梯形截面形状。作为另一种可行方式，第一连接垫312与高电位走线313连接端的端面面积小于第一连接垫312与高电位连接垫311连接端的端面面积，第二连接垫322与低电位走线323连接端的端面面积小于第二连接垫322与低电位连接垫321连接端的端面面积。\n\n[0056]本发明通过将高电位走线313在盖板200的底板210上走线，高电位连接垫311设置于显示基板100上，高电位走线313与高电位连接垫311通过第一连接垫312电连接导通，同理，将低电位走线323在盖板200的底板210上走线，低电位连接垫321设置于显示基板100上，低电位走线323与低电位连接垫321通过第二连接垫322电连接导通。由于将高电位输电线路310的走线部分和低电位输电线路320的走线部分转移至盖板200上，可以選用較粗較厚的走線，減少了现有因为在显示基板100上走线空間不足，導致走線過細，电阻過高以致压降過大的问题，保证发光元件400发光的均匀性，保证显示面板显示区域亮度的均匀性。而且，由于将高电位输电线路310的走线部分和低电位输电线路320的走线部分转移至盖板200上，可增加显示基板100上的其他结构以及制程余地(margin)。\n\n[0057]参照图1a和图4，本发明还提供所述显示面板的制作方法，包括如下步骤：\n\n[0058]S110、提供显示基板100；\n\n[0059]S120、在所述显示基板100一面形成薄膜晶体管层TL；\n\n[0060]S130、在所述薄膜晶体管层TL上间隔形成高电位连接垫311、发光元件焊垫1721/1722和低电位连接垫321；\n\n[0061]S140、转移发光元件400至所述发光元件焊垫1721/1722上；\n\n[0062]S150、提供盖板200；\n\n[0063]S160、在所述盖板200一面上形成间隔排布的高电位走线313和低电位走线323；\n\n[0064]S170、在所述高电位走线313上形成第一连接垫312，在所述低电位走线323形成第二连接垫322；\n\n[0065]S180、将所述盖板200对合于所述显示基板100，其中所述第一连接垫312与所述第二连接垫322面向所述显示基板100且所述第一连接垫312与所述高电位连接垫311对接，所述第二连接垫322与所述低电位连接垫321对接。\n\n[0066]其中，所述驱动薄膜晶体管150的漏极154通过过孔与有源层151连接，源极155通过过孔与有源层151连接。\n\n[0067]其中，第一保护层140背离所述层间介质层130一面间隔形成有第一导电层171、第二导电层172和第三导电层173，第一导电层171通过过孔沉积至源极155并与源漏极155连接，第二导电层172通过过孔沉积至漏极154并与漏极154连接，第三导电层173通过过孔沉积至接触电极158并与接触电极158连接，第二导电层172背离第一保护层140一面形成有发光元件焊垫1721；第三导电层173背离第一保护层140一面形成有发光元件焊垫1722及低电位连接垫321。\n\n[0068]在本实施例中，发光元件400的第一电极410与发光元件焊垫1722电性连接，第二电极420与驱动薄膜晶体管150的漏极154电性连接。\n\n[0069]具体的，发光元件400的第二电极420通过发光元件焊垫1721和第二导电层172与驱动薄膜晶体管150的漏极154电性连接。\n\n[0070]在本实施例中，盖板200的形成步骤如下：(参照图5a～5e)\n\n[0071]提供底板210；\n\n[0072]在底板210一面上进行金属成膜及图形化，形成间隔排布的高电位走线313和低电位走线323；\n\n[0073]在形成高电位走线313和低电位走线323的底板210表面形成第二保护层220；\n\n[0074]图形化第二保护层220以开设第一通孔221及第二通孔222，其中第一通孔221暴露至少部分高电位走线313，第二通孔222暴露至少部分低电位走线323；\n\n[0075]在第二保护层220背离底板210一面涂布负性光阻并图形化，形成负性光阻层230；\n\n[0076]在负性光阻层230背离第二保护层220一面蒸镀形成金属膜层240，部分金属膜层240通过第一通孔221沉积至高电位走线313形成第一连接垫312，部分金属膜层240通过第二通孔222沉积至低电位走线323形成第二连接垫322；\n\n[0077]去除负性光阻层230及位于负性光阻层230上的金属膜层240。\n\n[0078]其中，盖板200的底板210采用透明材质，可为玻璃或PET或其他材料。高电位走线313和低电位走线323的走线工艺也可采用印刷、打印、厚膜PVD等方式实现低电阻设计。\n\n[0079]以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出多个改进和润饰，这些改进和润饰也应视为本发明的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10979, 24033, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种Micro LED显示面板及其制备方法。\n\n背景技术\n\n[0002]微发光二极体显示器(Micro LED Display)为新一代的显示技术，Micro LED继承了LED的特性，具有尺寸小、重量轻、亮度高、寿命长、功耗低、响应时间快及可控性强的优点，且Micro LED的色域能大于120％，PPI(像素密度)能达到1500。因此，较多面板厂家参与Micro LED技术开发之中。\n\n[0003]但是，微发光二极体显示器还有诸多技术难点需要克服，如在大尺寸显示上远离VDD/VSS输入端的区域，由于走线电阻导致VDD发生压降、VSS压升，造成LED芯片两端压差降低，亮度下降，整面亮度不均。\n\n[0004]因此，改善电阻引起的电流下降对micro LED大尺寸化至关重要。\n\n发明内容\n\n[0005]本发明的目的在于，提供一种Micro LED显示面板及其制备方法，以解决走线电阻导致VDD发生压降、VSS压升，发光器件的两端压差降低，导致显示面板亮度不均的技术问题。\n\n[0006]为实现上述目的，本发明提供一种Micro LED显示面板，包括：玻璃基板；遮光层，设于所述玻璃基板上；缓冲层，设于所述玻璃基板上，且覆盖所述遮光层；薄膜晶体管层，设于所述缓冲层上，其中所述薄膜晶体管包括：有源层，设于所述缓冲层上，且正对于所述遮光层；栅极绝缘层，设于所述有源层上；栅极层，设于所述栅极绝缘层上；介电层，设于所述缓冲层上，且覆盖所述栅极层及所述有源层；源漏极层，设于所述介电层上，且连接至所述有源层的两侧；以及走线层，与所述源漏极层同层设置；钝化层，设于所述薄膜晶体管层上，且覆盖部分所述源漏极层及部分所述走线层；ITO连接层，连接至部分所述源漏极层及所述走线层；公共连接层，设于所述ITO连接层上，其图案化形成第一电极、第二电极、VDD走线以及VSS走线；第一金属通孔和第二金属通孔，均依次贯穿所述钝化层、所述介电层、所述缓冲层以及所述玻璃基板；第一金属走线，填充所述第一金属通孔，且覆盖所述VDD走线；以及第二金属走线，填充所述第二金属通孔，且延覆盖所述VSS走线。\n\n[0007]进一步的，所述的Micro LED显示面板还包括：第一金属连接层，设于所述玻璃基板且远离所述遮光层的一侧表面，且连接至所述第一金属走线；第二金属连接层，与所述第一金属连接层同层设置，设于所述玻璃基板且远离所述遮光层的一侧表面，且连接至所述第二金属走线。\n\n[0008]进一步的，所述的Micro LED显示面板还包括：第一保护层，设于所述第一金属连接层、所述第二金属连接层及所述玻璃基板且远离所述遮光层的一侧表面。\n\n[0009]进一步的，所述的Micro LED显示面板还包括：第二保护层，设于所述钝化层上，且覆盖所述第一电极、所述第二电极、所述第一金属走线及所述第二金属走线；其中，所述第二保护层设置第一开口和第二开口，所述第一开口用于暴露所述第一电极；所述第二开口用以暴露所述第二电极。\n\n[0010]进一步的，所述的Micro LED显示面板还包括：Micro LED器件，包括第一连接部和第二连接部，所述第一连接部连接至所述第一电极；所述第二连接部连接至所述第二电极。\n\n[0011]为实现上述目的，本发明还提供一种Micro LED显示面板的制备方法，包括如下制备步骤：形成遮光层于玻璃基板上；形成缓冲层于所述玻璃基板上，且覆盖所述遮光层；形成薄膜晶体管层于所述缓冲层上；所述形成薄膜晶体管层于所述缓冲层上的步骤，包括：形成有源层于所述缓冲层上，且正对于所述遮光层；形成栅极绝缘层于所述有源层上；形成栅极层于所述栅极绝缘层上；形成介电层于所述缓冲层上，且覆盖所述栅极层及所述有源层；对所述介电层进行挖孔处理，形成两个连接孔，用以暴露出所述有源层，其中所述两个连接孔分别位于所述有源层的两侧；形成所述源漏极层及所述走线层于所述介电层上，其中所述源漏极层填充所述两个连接孔，且连接至所述有源层；形成钝化层于所述薄膜晶体管层上，且覆盖部分所述源漏极层及部分所述走线层；对所述钝化层进行挖孔处理，形成第一过孔和第二过孔，所述第一过孔连通至所述源漏极层表面，所述第二过孔连通至所述走线层表面；形成ITO连接层于所述钝化层上，其中一部分所述ITO连接层填充所述第一过孔，且连接至部分所述源漏极层，另一部分所述ITO连接层填充所述第二过孔，且连接至所述走线层；形成公共连接层于所述ITO连接层上，所述公共连接层包括第一电极、第二电极、所述第一VDD走线以及所述第一VSS走线；形成第一金属通孔和第二金属通孔，所述第一金属通孔和第二金属通孔均依次贯穿所述钝化层、所述介电层、所述缓冲层以及所述玻璃基板；以及形成第一金属走线和第二金属走线；其中，所述第一金属走线填充所述第一金属通孔，且覆盖所述VDD走线；所述第二金属走线填充所述第二金属通孔，且覆盖所述VSS走线。\n\n[0012]进一步的，在所述形成第一金属走线和第二金属走线的步骤之后，还包括：形成第一金属连接层和第二金属连接层于所述玻璃基板且远离所述遮光层的一侧表面，其中所述第一金属连接层连接至所述第一金属走线，所述第二金属连接层连接至所述第二金属走线。\n\n[0013]进一步的，在所述形成第一金属连接层和第二金属连接层的步骤之后，还包括：形成第一保护层于所述第一金属连接层、所述第二金属连接层及所述玻璃基板的下表面。\n\n[0014]进一步的，在所述形成第一金属连接层和第二金属连接层的步骤之后，还包括：形成第二保护层于所述钝化层上，所述第二保护层覆盖所述第一电极、所述第二电极、所述第一金属走线及所述第二金属走线；其中，所述第二保护层设置第一开口和第二开口，所述第一开口用于暴露所述第一电极；所述第二开口用以暴露所述第二电极。\n\n[0015]进一步的，在所述形成第二保护层的步骤之后，还包括：安装Micro LED器件，所述Micro LED器件的第一连接部连接至所述第一电极；所述Micro LED器件的第二连接部连接至所述第二电极。\n\n[0016]本发明的技术效果在于，提供一种Micro LED显示面板及其制备方法，通过对阵列基板进行打孔，使得阵列基板的正面走线(即位于玻璃基板上方的VDD走线和VSS走线)连接至阵列基板的背面走线(即第一金属连接层和第二金属连接层)，由于背面走线因不影响显示，因此，通过增加背面走线的线宽、膜厚，以实现低电阻。另外，通过在第一金属通孔的位置将VDD信号输入，以及在第二金属通孔VSS信号输入，从而增加VDD信号和VSS信号的输入点，可以减少面内VDD与VSS走线距离，改善电压降(IR drop)。\n\n附图说明\n\n[0017]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0018]图1为本申请实施例提供的显示面板的剖面图。\n\n[0019]图2为本申请实施例提供的显示面板的平面图。\n\n[0020]图3为本申请实施例提供的显示面板的制备方法的流程图。\n\n[0021]图4为本申请实施例提供的形成薄膜晶体管层的流程图。\n\n[0022]附图部件标识如下：\n\n[0023]1、阵列基板； 2、发光器件；\n\n[0024]11、玻璃基板； 12、遮光层；\n\n[0025]13、缓冲层； 14、薄膜晶体管层；\n\n[0026]15、走线层； 16、钝化层；\n\n[0027]17、导电连接层； 18、公共连接层；\n\n[0028]19、第一金属走线； 20、第二金属走线；\n\n[0029]21a、第一金属连接层； 21b、第二金属连接层；\n\n[0030]22、第一保护层； 23、第二保护层；\n\n[0031]141、有源层； 142、栅极层；\n\n[0032]143、源漏极层；\n\n[0033]441、栅极绝缘层； 442、介电层；\n\n[0034]4420、连接孔； 161、第一过孔；\n\n[0035]162、第二过孔； 181、第一电极；\n\n[0036]182、第二电极； 183、VDD走线；\n\n[0037]184、VSS走线； 231、第一开口；\n\n[0038]232、第二开口； 201、衬底层；\n\n[0039]202、N型半导体层； 203、P型半导体层；\n\n[0040]204、第一连接部； 205、第二连接部；\n\n[0041]190、第一金属通孔； 200、第二金属通孔；\n\n[0042]101、显示模块； 102、驱动模块；\n\n[0043]100、显示面板。\n\n具体实施方式\n\n[0044]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。在本申请的描述中，需要理解的是，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0045]如图1所示，本实施例提供一种Micro LED显示面板100，包括一阵列基板1，该阵列基板1包括玻璃基板11、遮光层12、缓冲层13、薄膜晶体管层14、有源层141、走线层15、钝化层16、ITO连接层、公共连接层18、第一金属走线19、第二金属走线20、金属连接层、第一保护层22以及第二保护层23。\n\n[0046]遮光层12设于玻璃基板11上，该遮光层12所用的材料可以为金属材料，或者其他的遮光材料，在此不做特别的限定。\n\n[0047]缓冲层13设于玻璃基板11上，且覆盖遮光层12。缓冲层13所用的材料包括但不限于氮化硅、氧化硅。\n\n[0048]薄膜晶体管层14设于缓冲层13上，其包括有源层141、栅极绝缘层441、栅极层142、介电层442以及源漏极层143。\n\n[0049]有源层141设于缓冲层13上，且正对于遮光层12。有源层141所用的材料包括氧化铟镓锌(Indium-Gallium-Zinc Oxide，IGZO)、氧化锌(Zinc oxide，ZnO)、氧化锡(Stannousoxide，SnO)、氧化铟锌(Indium-Zinc Oxide，IZO)、氧化镓锌(Gallium-Zinc Oxide，GaZnO)、氧化锌锡(Zinc-TinOxide，ZTO)、氧化铟锡(Indium-Tin Oxide，ITO)及其混合所组成的群组之中的其中一种。\n\n[0050]栅极绝缘层441设于有源层141上，其所用的材料包括但不限于氮化硅、氧化硅。\n\n[0051]栅极层142设于栅极绝缘层441上。\n\n[0052]介电层442设于缓冲层13上，且覆盖栅极层142及有源层141。介电层442所用的材料包括但不限于氮化硅、氧化硅。介电层442设置有两个连接孔4420，用以暴露有源层141。\n\n[0053]同层设置的源漏极层143和走线层15均设于介电层442上。源漏极层143填充两个连接孔4420，且连接至有源层141的两侧。\n\n[0054]钝化层16设于薄膜晶体管层14上，且覆盖部分源漏极层143及部分走线层15。钝化层16所用的材料包括但不限于氮化硅、氧化硅。钝化层16设置第一过孔161和第二过孔162，其中第一过孔161用以暴露源漏极层143，第二过孔162用以暴露走线层15。\n\n[0055]ITO连接层(Indium-Tin Oxide，氧化铟锡)，连接至部分源漏极层143及走线层15。其中一部分ITO连接层填充第一过孔161，且连接至部分源漏极层143另一部分ITO连接层填充第二过孔162，且连接至走线层15。\n\n[0056]公共连接层18设于ITO连接层上，其图案化形成第一电极181、第二电极182、VDD走线183以及VSS走线184。\n\n[0057]第一金属通孔190和第二金属通孔200均依次贯穿钝化层16、介电层442、缓冲层13以及玻璃基板11。\n\n[0058]第一金属走线19填充第一金属通孔190，且覆盖VDD走线183；第二金属走线20填充第二金属通孔200，且延覆盖VSS走线184。\n\n[0059]第一金属连接层21a设于玻璃基板11的下表面，且连接至第一金属走线19。第二金属连接层21b与第一金属连接层21a同层设置，设于玻璃基板11的下表面，且连接至第二金属走线20。\n\n[0060]在本实施例中，第一金属走线19、第二金属走线20以及金属连接层所用的材质可以相同，也可以不同。这三者所用的材质可以为铜、钼、铝等的中一种或多种，当然也可以为合金。\n\n[0061]本实施例通过对阵列基板1进行打孔，使得阵列基板1的正面走线(即位于玻璃基板11上方的VDD走线183和VSS走线184)连接至阵列基板1的背面走线(即第一金属连接层21a和第二金属连接层21b)，由于背面走线因不影响显示，因此，通过增加背面走线的线宽、膜厚，以实现低电阻。另外，通过在第一金属通孔190的位置将VDD信号输入，以及在第二金属通孔200VSS信号输入，从而增加VDD信号和VSS信号的输入点，可以减少面内VDD走线183与VSS走线184距离，改善电压降(IR drop)。\n\n[0062]第一保护层22设于第一金属连接层21a、第二金属连接层21b及玻璃基板11的下表面。第一保护层22用于对第一金属连接层21a、第二金属连接层21b及玻璃基板11实现平坦化的作用，有利于保证阵列基板1的平整性，并且还能保护第一金属连接层21a、第二金属连接层21b不被水氧入侵，避免VDD走线183和VSS走线184发生短路，从而有利于提高显示面板100的良率。\n\n[0063]第二保护层23设于钝化层16上，且覆盖第一电极181、第二电极182、第一金属走线19及第二金属走线20。第二保护层23设置第一开口231和第二开口232，其中第一开口231用于暴露第一电极181，第二开口232用以暴露第二电极182。第二保护层23对第一电极181、第二电极182、第一金属走线19及第二金属走线20实现平坦化的作用。\n\n[0064]在本实施例中，第一保护层22和第二保护层23所用的材质可以相同，也可以不同。其中，第一保护层22和第二保护层23的结构可以为有机层、无机层的单层或者叠层结构。\n\n[0065]如图2所示，本实施例提供一种显示面板100，还包括显示模块101和驱动模块102(如驱动芯片)。假设显示模块101内具有6个金属通孔(即第一金属通孔190和第二金属通孔200)，在相邻两个金属通孔的中间位置为压降最大处，且显示模块101内的最大压差为△V，相较于从驱动模块102边缘的输入电压△Vinitial，其中，△V为△Vinitial的1/6。由此可见，本实施例通过对阵列基板1进行打孔，形成金属通孔，使得阵列基板1的正面走线(即位于玻璃基板11上方的VDD走线183和VSS走线184)连接至阵列基板1的背面走线(即第一金属连接层21a和第二金属连接层21b)，由于背面走线因不影响显示，因此，通过增加背面走线的线宽、膜厚，以实现低电阻。另外，通过在第一金属通孔190的位置将VDD信号输入，以及在第二金属通孔200的位置将VSS信号输入，从而增加VDD信号和VSS信号的输入点，可以减少面内VDD走线183与VSS走线184距离，改善电压降(IR drop)。\n\n[0066]本实施例提供的显示面板100还包括Micro LED器件，Micro LED器件包括衬底层201、N型半导体层202、P型半导体层203、第一连接部204以及第二连接部205。第一连接部204连接至第一电极181，第二连接部205连接至第二电极182。其中，第一连接部204为N型电极，且连接至所述第一电极181。第二连接部205为P型电极，且连接至所述第二电极182。\n\n[0067]进一步的，本实施例提供一种Micro LED显示面板100，除了包括上述部件之外，还包括其他部件，如偏光片、盖板等，在此不一一赘述。\n\n[0068]如图3所示，本实施例还提供一种Micro LED显示面板100的制备方法，包括如下制备步骤S1)-S13)。\n\n[0069]S1)形成遮光层12于玻璃基板11上，参照图1。遮光层12所用的材料可以为金属材料，或者其他的遮光材料，在此不做特别的限定。\n\n[0070]S2)形成缓冲层13于所述玻璃基板11上，且覆盖所述遮光层12，参照图1。缓冲层13所用的材料包括但不限于氮化硅、氧化硅。\n\n[0071]S3)形成薄膜晶体管层14于所述缓冲层13上，参照图1。\n\n[0072]具体的，如图4所示，在所述形成薄膜晶体管层14于所述缓冲层13上的步骤中，包括如下制备步骤S31)-S36)。\n\n[0073]S31)形成有源层141于所述缓冲层13上，且正对于所述遮光层12，参照图1。\n\n[0074]S32)形成栅极绝缘层441于所述有源层141上，参照图1。栅极绝缘层441所用的材料包括但不限于氮化硅、氧化硅。\n\n[0075]S33)形成栅极层142于所述栅极绝缘层441上，参照图1。\n\n[0076]S34)形成介电层442于所述缓冲层13上，且覆盖所述栅极层142及所述有源层141，参照图1。介电层442所用的材料包括但不限于氮化硅、氧化硅。\n\n[0077]S35)对所述介电层442进行挖孔处理，形成两个连接孔4420，用以暴露出所述有源层141，其中所述两个连接孔4420分别位于所述有源层141的两侧，参照图1。\n\n[0078]S36)形成所述源漏极层143及所述走线层15于所述介电层442上，其中所述源漏极层143填充所述两个连接孔4420，且连接至所述有源层141，参照图1。\n\n[0079]S4)形成钝化层16于所述薄膜晶体管层14上，且覆盖部分所述源漏极层143及部分所述走线层15，参照图1。钝化层16所用的材料包括但不限于氮化硅、氧化硅。\n\n[0080]S5)对所述钝化层16进行挖孔处理，形成第一过孔161和第二过孔162，所述第一过孔161连通至所述源漏极层143表面，所述第二过孔162连通至所述走线层15表面，参照图1。\n\n[0081]S6)形成ITO连接层于所述钝化层16上，其中一部分所述ITO连接层填充所述第一过孔161，且连接至部分所述源漏极层143，另一部分所述ITO连接层填充所述第二过孔162，且连接至所述走线层15，参照图1。\n\n[0082]S7)形成公共连接层18于所述ITO连接层上，所述公共连接层18包括第一电极181、第二电极182、所述VDD走线183以及所述VSS走线184，参照图1。\n\n[0083]S8)形成第一金属通孔190和第二金属通孔200，所述第一金属通孔190和第二金属通孔200均依次贯穿所述钝化层16、所述介电层442、所述缓冲层13以及所述玻璃基板11，参照图1。其中，第一金属通孔190和第二金属通孔200可以根据实际需求进行设定，在此不作特别的限定。\n\n[0084]S9)形成第一金属走线19和第二金属走线20；其中，所述第一金属走线19填充所述第一金属通孔190，且覆盖所述VDD走线183；所述第二金属走线20填充所述第二金属通孔200，且覆盖所述VSS走线184，参照图1。本实施例中，可以采用溅渡方法形成第一金属走线19和第二金属走线20。\n\n[0085]S10)形成第一金属连接层21a和第二金属连接层21b于所述玻璃基板11且远离所述遮光层12的一侧表面，其中所述第一金属连接层21a连接至所述第一金属走线19，所述第二金属连接层21b连接至所述第二金属走线20，参照图1。具体的，采用印刷方法、打印方法、物理气相沉积(Physical Vapor Deposition)方法中的至少一种形成第一金属连接层21a和第二金属连接层21b，以实现低电阻设计，同时不会对阵列基板的制程工艺造成负面影响。\n\n[0086]S11)形成第一保护层22于所述第一金属连接层21a、所述第二金属连接层21b及所述玻璃基板11的下表面，参照图1。第一保护层22用于对第一金属连接层21a、第二金属连接层21b及玻璃基板11实现平坦化的作用，有利于保证阵列基板1的平整性，并且还能保护第一金属连接层21a、第二金属连接层21b不被水氧入侵，避免VDD走线183和VSS走线184发生短路，从而有利于提高显示面板100的良率。\n\n[0087]S12)形成第二保护层23于所述钝化层16上，所述第二保护层23覆盖所述第一电极181、所述第二电极182、所述第一金属走线19及所述第二金属走线20；其中，所述第二保护层23设置第一开口231和第二开口232，所述第一开口231用于暴露所述第一电极181；所述第二开口232用以暴露所述第二电极182，参照图1。第二保护层23对第一电极181、第二电极182、第一金属走线19及第二金属走线20实现平坦化的作用。\n\n[0088]S13)安装Micro LED器件，所述Micro LED器件的第一连接部204连接至所述第一电极181；所述Micro LED器件的第二连接部205连接至所述第二电极182，参照图1。\n\n[0089]本实施例通过对阵列基板1进行打孔，使得阵列基板1的正面走线(即位于玻璃基板11上方的VDD走线183和VSS走线184)连接至阵列基板1的背面走线(即第一金属连接层21a和第二金属连接层21b)，由于背面走线因不影响显示，因此，通过增加背面走线的线宽、膜厚，以实现低电阻。另外，通过在第一金属通孔190的位置将VDD信号输入，以及在第二金属通孔200的位置将VSS信号输入，从而增加VDD信号和VSS信号的输入点，可以减少面内VDD走线183与VSS走线184距离，改善电压降(IR drop)。\n\n[0090]以上对本申请实施例所提供的一种Micro LED显示面板及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种Micro LED显示面板及其制备方法。\n\n背景技术\n\n[0002]微发光二极体显示器(Micro LED Display)为新一代的显示技术，Micro LED继承了LED的特性，具有尺寸小、重量轻、亮度高、寿命长、功耗低、响应时间快及可控性强的优点，且Micro LED的色域能大于120％，PPI(像素密度)能达到1500。因此，较多面板厂家参与Micro LED技术开发之中。\n\n[0003]但是，微发光二极体显示器还有诸多技术难点需要克服，如在大尺寸显示上远离VDD/VSS输入端的区域，由于走线电阻导致VDD发生压降、VSS压升，造成LED芯片两端压差降低，亮度下降，整面亮度不均。\n\n[0004]因此，改善电阻引起的电流下降对micro LED大尺寸化至关重要。\n\n发明内容\n\n[0005]本发明的目的在于，提供一种Micro LED显示面板及其制备方法，以解决走线电阻导致VDD发生压降、VSS压升，发光器件的两端压差降低，导致显示面板亮度不均的技术问题。\n\n[0006]为实现上述目的，本发明提供一种Micro LED显示面板，包括：玻璃基板；遮光层，设于所述玻璃基板上；缓冲层，设于所述玻璃基板上，且覆盖所述遮光层；薄膜晶体管层，设于所述缓冲层上，其中所述薄膜晶体管包括：有源层，设于所述缓冲层上，且正对于所述遮光层；栅极绝缘层，设于所述有源层上；栅极层，设于所述栅极绝缘层上；介电层，设于所述缓冲层上，且覆盖所述栅极层及所述有源层；源漏极层，设于所述介电层上，且连接至所述有源层的两侧；以及走线层，与所述源漏极层同层设置；钝化层，设于所述薄膜晶体管层上，且覆盖部分所述源漏极层及部分所述走线层；ITO连接层，连接至部分所述源漏极层及所述走线层；公共连接层，设于所述ITO连接层上，其图案化形成第一电极、第二电极、VDD走线以及VSS走线；第一金属通孔和第二金属通孔，均依次贯穿所述钝化层、所述介电层、所述缓冲层以及所述玻璃基板；第一金属走线，填充所述第一金属通孔，且覆盖所述VDD走线；以及第二金属走线，填充所述第二金属通孔，且延覆盖所述VSS走线。\n\n[0007]进一步的，所述的Micro LED显示面板还包括：第一金属连接层，设于所述玻璃基板且远离所述遮光层的一侧表面，且连接至所述第一金属走线；第二金属连接层，与所述第一金属连接层同层设置，设于所述玻璃基板且远离所述遮光层的一侧表面，且连接至所述第二金属走线。\n\n[0008]进一步的，所述的Micro LED显示面板还包括：第一保护层，设于所述第一金属连接层、所述第二金属连接层及所述玻璃基板且远离所述遮光层的一侧表面。\n\n[0009]进一步的，所述的Micro LED显示面板还包括：第二保护层，设于所述钝化层上，且覆盖所述第一电极、所述第二电极、所述第一金属走线及所述第二金属走线；其中，所述第二保护层设置第一开口和第二开口，所述第一开口用于暴露所述第一电极；所述第二开口用以暴露所述第二电极。\n\n[0010]进一步的，所述的Micro LED显示面板还包括：Micro LED器件，包括第一连接部和第二连接部，所述第一连接部连接至所述第一电极；所述第二连接部连接至所述第二电极。\n\n[0011]为实现上述目的，本发明还提供一种Micro LED显示面板的制备方法，包括如下制备步骤：形成遮光层于玻璃基板上；形成缓冲层于所述玻璃基板上，且覆盖所述遮光层；形成薄膜晶体管层于所述缓冲层上；所述形成薄膜晶体管层于所述缓冲层上的步骤，包括：形成有源层于所述缓冲层上，且正对于所述遮光层；形成栅极绝缘层于所述有源层上；形成栅极层于所述栅极绝缘层上；形成介电层于所述缓冲层上，且覆盖所述栅极层及所述有源层；对所述介电层进行挖孔处理，形成两个连接孔，用以暴露出所述有源层，其中所述两个连接孔分别位于所述有源层的两侧；形成所述源漏极层及所述走线层于所述介电层上，其中所述源漏极层填充所述两个连接孔，且连接至所述有源层；形成钝化层于所述薄膜晶体管层上，且覆盖部分所述源漏极层及部分所述走线层；对所述钝化层进行挖孔处理，形成第一过孔和第二过孔，所述第一过孔连通至所述源漏极层表面，所述第二过孔连通至所述走线层表面；形成ITO连接层于所述钝化层上，其中一部分所述ITO连接层填充所述第一过孔，且连接至部分所述源漏极层，另一部分所述ITO连接层填充所述第二过孔，且连接至所述走线层；形成公共连接层于所述ITO连接层上，所述公共连接层包括第一电极、第二电极、所述第一VDD走线以及所述第一VSS走线；形成第一金属通孔和第二金属通孔，所述第一金属通孔和第二金属通孔均依次贯穿所述钝化层、所述介电层、所述缓冲层以及所述玻璃基板；以及形成第一金属走线和第二金属走线；其中，所述第一金属走线填充所述第一金属通孔，且覆盖所述VDD走线；所述第二金属走线填充所述第二金属通孔，且覆盖所述VSS走线。\n\n[0012]进一步的，在所述形成第一金属走线和第二金属走线的步骤之后，还包括：形成第一金属连接层和第二金属连接层于所述玻璃基板且远离所述遮光层的一侧表面，其中所述第一金属连接层连接至所述第一金属走线，所述第二金属连接层连接至所述第二金属走线。\n\n[0013]进一步的，在所述形成第一金属连接层和第二金属连接层的步骤之后，还包括：形成第一保护层于所述第一金属连接层、所述第二金属连接层及所述玻璃基板的下表面。\n\n[0014]进一步的，在所述形成第一金属连接层和第二金属连接层的步骤之后，还包括：形成第二保护层于所述钝化层上，所述第二保护层覆盖所述第一电极、所述第二电极、所述第一金属走线及所述第二金属走线；其中，所述第二保护层设置第一开口和第二开口，所述第一开口用于暴露所述第一电极；所述第二开口用以暴露所述第二电极。\n\n[0015]进一步的，在所述形成第二保护层的步骤之后，还包括：安装Micro LED器件，所述Micro LED器件的第一连接部连接至所述第一电极；所述Micro LED器件的第二连接部连接至所述第二电极。\n\n[0016]本发明的技术效果在于，提供一种Micro LED显示面板及其制备方法，通过对阵列基板进行打孔，使得阵列基板的正面走线(即位于玻璃基板上方的VDD走线和VSS走线)连接至阵列基板的背面走线(即第一金属连接层和第二金属连接层)，由于背面走线因不影响显示，因此，通过增加背面走线的线宽、膜厚，以实现低电阻。另外，通过在第一金属通孔的位置将VDD信号输入，以及在第二金属通孔VSS信号输入，从而增加VDD信号和VSS信号的输入点，可以减少面内VDD与VSS走线距离，改善电压降(IR drop)。\n\n附图说明\n\n[0017]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0018]图1为本申请实施例提供的显示面板的剖面图。\n\n[0019]图2为本申请实施例提供的显示面板的平面图。\n\n[0020]图3为本申请实施例提供的显示面板的制备方法的流程图。\n\n[0021]图4为本申请实施例提供的形成薄膜晶体管层的流程图。\n\n[0022]附图部件标识如下：\n\n[0023]1、阵列基板； 2、发光器件；\n\n[0024]11、玻璃基板； 12、遮光层；\n\n[0025]13、缓冲层； 14、薄膜晶体管层；\n\n[0026]15、走线层； 16、钝化层；\n\n[0027]17、导电连接层； 18、公共连接层；\n\n[0028]19、第一金属走线； 20、第二金属走线；\n\n[0029]21a、第一金属连接层； 21b、第二金属连接层；\n\n[0030]22、第一保护层； 23、第二保护层；\n\n[0031]141、有源层； 142、栅极层；\n\n[0032]143、源漏极层；\n\n[0033]441、栅极绝缘层； 442、介电层；\n\n[0034]4420、连接孔； 161、第一过孔；\n\n[0035]162、第二过孔； 181、第一电极；\n\n[0036]182、第二电极； 183、VDD走线；\n\n[0037]184、VSS走线； 231、第一开口；\n\n[0038]232、第二开口； 201、衬底层；\n\n[0039]202、N型半导体层； 203、P型半导体层；\n\n[0040]204、第一连接部； 205、第二连接部；\n\n[0041]190、第一金属通孔； 200、第二金属通孔；\n\n[0042]101、显示模块； 102、驱动模块；\n\n[0043]100、显示面板。\n\n具体实施方式\n\n[0044]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。在本申请的描述中，需要理解的是，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0045]如图1所示，本实施例提供一种Micro LED显示面板100，包括一阵列基板1，该阵列基板1包括玻璃基板11、遮光层12、缓冲层13、薄膜晶体管层14、有源层141、走线层15、钝化层16、ITO连接层、公共连接层18、第一金属走线19、第二金属走线20、金属连接层、第一保护层22以及第二保护层23。\n\n[0046]遮光层12设于玻璃基板11上，该遮光层12所用的材料可以为金属材料，或者其他的遮光材料，在此不做特别的限定。\n\n[0047]缓冲层13设于玻璃基板11上，且覆盖遮光层12。缓冲层13所用的材料包括但不限于氮化硅、氧化硅。\n\n[0048]薄膜晶体管层14设于缓冲层13上，其包括有源层141、栅极绝缘层441、栅极层142、介电层442以及源漏极层143。\n\n[0049]有源层141设于缓冲层13上，且正对于遮光层12。有源层141所用的材料包括氧化铟镓锌(Indium-Gallium-Zinc Oxide，IGZO)、氧化锌(Zinc oxide，ZnO)、氧化锡(Stannousoxide，SnO)、氧化铟锌(Indium-Zinc Oxide，IZO)、氧化镓锌(Gallium-Zinc Oxide，GaZnO)、氧化锌锡(Zinc-TinOxide，ZTO)、氧化铟锡(Indium-Tin Oxide，ITO)及其混合所组成的群组之中的其中一种。\n\n[0050]栅极绝缘层441设于有源层141上，其所用的材料包括但不限于氮化硅、氧化硅。\n\n[0051]栅极层142设于栅极绝缘层441上。\n\n[0052]介电层442设于缓冲层13上，且覆盖栅极层142及有源层141。介电层442所用的材料包括但不限于氮化硅、氧化硅。介电层442设置有两个连接孔4420，用以暴露有源层141。\n\n[0053]同层设置的源漏极层143和走线层15均设于介电层442上。源漏极层143填充两个连接孔4420，且连接至有源层141的两侧。\n\n[0054]钝化层16设于薄膜晶体管层14上，且覆盖部分源漏极层143及部分走线层15。钝化层16所用的材料包括但不限于氮化硅、氧化硅。钝化层16设置第一过孔161和第二过孔162，其中第一过孔161用以暴露源漏极层143，第二过孔162用以暴露走线层15。\n\n[0055]ITO连接层(Indium-Tin Oxide，氧化铟锡)，连接至部分源漏极层143及走线层15。其中一部分ITO连接层填充第一过孔161，且连接至部分源漏极层143另一部分ITO连接层填充第二过孔162，且连接至走线层15。\n\n[0056]公共连接层18设于ITO连接层上，其图案化形成第一电极181、第二电极182、VDD走线183以及VSS走线184。\n\n[0057]第一金属通孔190和第二金属通孔200均依次贯穿钝化层16、介电层442、缓冲层13以及玻璃基板11。\n\n[0058]第一金属走线19填充第一金属通孔190，且覆盖VDD走线183；第二金属走线20填充第二金属通孔200，且延覆盖VSS走线184。\n\n[0059]第一金属连接层21a设于玻璃基板11的下表面，且连接至第一金属走线19。第二金属连接层21b与第一金属连接层21a同层设置，设于玻璃基板11的下表面，且连接至第二金属走线20。\n\n[0060]在本实施例中，第一金属走线19、第二金属走线20以及金属连接层所用的材质可以相同，也可以不同。这三者所用的材质可以为铜、钼、铝等的中一种或多种，当然也可以为合金。\n\n[0061]本实施例通过对阵列基板1进行打孔，使得阵列基板1的正面走线(即位于玻璃基板11上方的VDD走线183和VSS走线184)连接至阵列基板1的背面走线(即第一金属连接层21a和第二金属连接层21b)，由于背面走线因不影响显示，因此，通过增加背面走线的线宽、膜厚，以实现低电阻。另外，通过在第一金属通孔190的位置将VDD信号输入，以及在第二金属通孔200VSS信号输入，从而增加VDD信号和VSS信号的输入点，可以减少面内VDD走线183与VSS走线184距离，改善电压降(IR drop)。\n\n[0062]第一保护层22设于第一金属连接层21a、第二金属连接层21b及玻璃基板11的下表面。第一保护层22用于对第一金属连接层21a、第二金属连接层21b及玻璃基板11实现平坦化的作用，有利于保证阵列基板1的平整性，并且还能保护第一金属连接层21a、第二金属连接层21b不被水氧入侵，避免VDD走线183和VSS走线184发生短路，从而有利于提高显示面板100的良率。\n\n[0063]第二保护层23设于钝化层16上，且覆盖第一电极181、第二电极182、第一金属走线19及第二金属走线20。第二保护层23设置第一开口231和第二开口232，其中第一开口231用于暴露第一电极181，第二开口232用以暴露第二电极182。第二保护层23对第一电极181、第二电极182、第一金属走线19及第二金属走线20实现平坦化的作用。\n\n[0064]在本实施例中，第一保护层22和第二保护层23所用的材质可以相同，也可以不同。其中，第一保护层22和第二保护层23的结构可以为有机层、无机层的单层或者叠层结构。\n\n[0065]如图2所示，本实施例提供一种显示面板100，还包括显示模块101和驱动模块102(如驱动芯片)。假设显示模块101内具有6个金属通孔(即第一金属通孔190和第二金属通孔200)，在相邻两个金属通孔的中间位置为压降最大处，且显示模块101内的最大压差为△V，相较于从驱动模块102边缘的输入电压△Vinitial，其中，△V为△Vinitial的1/6。由此可见，本实施例通过对阵列基板1进行打孔，形成金属通孔，使得阵列基板1的正面走线(即位于玻璃基板11上方的VDD走线183和VSS走线184)连接至阵列基板1的背面走线(即第一金属连接层21a和第二金属连接层21b)，由于背面走线因不影响显示，因此，通过增加背面走线的线宽、膜厚，以实现低电阻。另外，通过在第一金属通孔190的位置将VDD信号输入，以及在第二金属通孔200的位置将VSS信号输入，从而增加VDD信号和VSS信号的输入点，可以减少面内VDD走线183与VSS走线184距离，改善电压降(IR drop)。\n\n[0066]本实施例提供的显示面板100还包括Micro LED器件，Micro LED器件包括衬底层201、N型半导体层202、P型半导体层203、第一连接部204以及第二连接部205。第一连接部204连接至第一电极181，第二连接部205连接至第二电极182。其中，第一连接部204为N型电极，且连接至所述第一电极181。第二连接部205为P型电极，且连接至所述第二电极182。\n\n[0067]进一步的，本实施例提供一种Micro LED显示面板100，除了包括上述部件之外，还包括其他部件，如偏光片、盖板等，在此不一一赘述。\n\n[0068]如图3所示，本实施例还提供一种Micro LED显示面板100的制备方法，包括如下制备步骤S1)-S13)。\n\n[0069]S1)形成遮光层12于玻璃基板11上，参照图1。遮光层12所用的材料可以为金属材料，或者其他的遮光材料，在此不做特别的限定。\n\n[0070]S2)形成缓冲层13于所述玻璃基板11上，且覆盖所述遮光层12，参照图1。缓冲层13所用的材料包括但不限于氮化硅、氧化硅。\n\n[0071]S3)形成薄膜晶体管层14于所述缓冲层13上，参照图1。\n\n[0072]具体的，如图4所示，在所述形成薄膜晶体管层14于所述缓冲层13上的步骤中，包括如下制备步骤S31)-S36)。\n\n[0073]S31)形成有源层141于所述缓冲层13上，且正对于所述遮光层12，参照图1。\n\n[0074]S32)形成栅极绝缘层441于所述有源层141上，参照图1。栅极绝缘层441所用的材料包括但不限于氮化硅、氧化硅。\n\n[0075]S33)形成栅极层142于所述栅极绝缘层441上，参照图1。\n\n[0076]S34)形成介电层442于所述缓冲层13上，且覆盖所述栅极层142及所述有源层141，参照图1。介电层442所用的材料包括但不限于氮化硅、氧化硅。\n\n[0077]S35)对所述介电层442进行挖孔处理，形成两个连接孔4420，用以暴露出所述有源层141，其中所述两个连接孔4420分别位于所述有源层141的两侧，参照图1。\n\n[0078]S36)形成所述源漏极层143及所述走线层15于所述介电层442上，其中所述源漏极层143填充所述两个连接孔4420，且连接至所述有源层141，参照图1。\n\n[0079]S4)形成钝化层16于所述薄膜晶体管层14上，且覆盖部分所述源漏极层143及部分所述走线层15，参照图1。钝化层16所用的材料包括但不限于氮化硅、氧化硅。\n\n[0080]S5)对所述钝化层16进行挖孔处理，形成第一过孔161和第二过孔162，所述第一过孔161连通至所述源漏极层143表面，所述第二过孔162连通至所述走线层15表面，参照图1。\n\n[0081]S6)形成ITO连接层于所述钝化层16上，其中一部分所述ITO连接层填充所述第一过孔161，且连接至部分所述源漏极层143，另一部分所述ITO连接层填充所述第二过孔162，且连接至所述走线层15，参照图1。\n\n[0082]S7)形成公共连接层18于所述ITO连接层上，所述公共连接层18包括第一电极181、第二电极182、所述VDD走线183以及所述VSS走线184，参照图1。\n\n[0083]S8)形成第一金属通孔190和第二金属通孔200，所述第一金属通孔190和第二金属通孔200均依次贯穿所述钝化层16、所述介电层442、所述缓冲层13以及所述玻璃基板11，参照图1。其中，第一金属通孔190和第二金属通孔200可以根据实际需求进行设定，在此不作特别的限定。\n\n[0084]S9)形成第一金属走线19和第二金属走线20；其中，所述第一金属走线19填充所述第一金属通孔190，且覆盖所述VDD走线183；所述第二金属走线20填充所述第二金属通孔200，且覆盖所述VSS走线184，参照图1。本实施例中，可以采用溅渡方法形成第一金属走线19和第二金属走线20。\n\n[0085]S10)形成第一金属连接层21a和第二金属连接层21b于所述玻璃基板11且远离所述遮光层12的一侧表面，其中所述第一金属连接层21a连接至所述第一金属走线19，所述第二金属连接层21b连接至所述第二金属走线20，参照图1。具体的，采用印刷方法、打印方法、物理气相沉积(Physical Vapor Deposition)方法中的至少一种形成第一金属连接层21a和第二金属连接层21b，以实现低电阻设计，同时不会对阵列基板的制程工艺造成负面影响。\n\n[0086]S11)形成第一保护层22于所述第一金属连接层21a、所述第二金属连接层21b及所述玻璃基板11的下表面，参照图1。第一保护层22用于对第一金属连接层21a、第二金属连接层21b及玻璃基板11实现平坦化的作用，有利于保证阵列基板1的平整性，并且还能保护第一金属连接层21a、第二金属连接层21b不被水氧入侵，避免VDD走线183和VSS走线184发生短路，从而有利于提高显示面板100的良率。\n\n[0087]S12)形成第二保护层23于所述钝化层16上，所述第二保护层23覆盖所述第一电极181、所述第二电极182、所述第一金属走线19及所述第二金属走线20；其中，所述第二保护层23设置第一开口231和第二开口232，所述第一开口231用于暴露所述第一电极181；所述第二开口232用以暴露所述第二电极182，参照图1。第二保护层23对第一电极181、第二电极182、第一金属走线19及第二金属走线20实现平坦化的作用。\n\n[0088]S13)安装Micro LED器件，所述Micro LED器件的第一连接部204连接至所述第一电极181；所述Micro LED器件的第二连接部205连接至所述第二电极182，参照图1。\n\n[0089]本实施例通过对阵列基板1进行打孔，使得阵列基板1的正面走线(即位于玻璃基板11上方的VDD走线183和VSS走线184)连接至阵列基板1的背面走线(即第一金属连接层21a和第二金属连接层21b)，由于背面走线因不影响显示，因此，通过增加背面走线的线宽、膜厚，以实现低电阻。另外，通过在第一金属通孔190的位置将VDD信号输入，以及在第二金属通孔200的位置将VSS信号输入，从而增加VDD信号和VSS信号的输入点，可以减少面内VDD走线183与VSS走线184距离，改善电压降(IR drop)。\n\n[0090]以上对本申请实施例所提供的一种Micro LED显示面板及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10980, 24034, '[0001]本发明涉及显示技术领域，尤其是涉及一种量子点彩膜基板及其制造方法、以及一种量子点显示装置。\n\n背景技术\n\n[0002]量子点(quantum dots，QDs)是一种奈米微晶体半导体材料，通常呈胶体状态，量子点的粒径一般介于1至20nm之间，常见的量子点由IV、II-VI、IV-VI或III-V元素组成，例如硅量子点、锗量子点、硫化镉量子点以及硒化镉量子点等。由于量子限域效应和表面效应，量子点具有激发光谱宽且连续分布、发射光谱窄且对称、发光颜色可随量子点的尺寸调整以及光化学的稳定性高等优越的发光特性，因此实现了更好的显色指数。量子点主要应用于电子、光电、光学、以及生命科学等领域。\n\n[0003]量子点彩膜基板能通过蓝色背光源，例如蓝光有机发光二极管(blue organiclight emitting diode，OLED)、蓝光微型发光二极管(blue micro light emittingdiode，micro-LED)、或蓝光亚毫米发光二极管(blue sub-millimeter light emittingdiode，mini-LED)激发由量子点所组成的色阻发光。这种包括量子点彩膜基板和发光二极管器件的量子点显示装置不仅具备发光二极管器件的自主发光、薄型化和柔性的特性而且还具备量子点高色域的优点。所述量子点显示装置利用量子点彩膜基板中的量子点的光致发光特性，把背光源发出的蓝光转换成红光和绿光，从而实现全彩化显示的目的。\n\n[0004]量子点彩膜基板主要由滤色层(color filter)和量子点膜层组成，其中的量子点膜层可利用(inkjet printing，IJP)喷墨打印的方式来制作。IJP的技术优势在于能够控制滴下墨水的位置及体积大小，从而实现在像素尺寸级别的区域进行打印成膜。然而，由于量子点彩膜基板中的量子点材料是打印在基板中的黑色光阻层坝堤(bank)内部，因为黑色光阻层为黑色材料，当量子点材料受激发而发光时，部分光会被黑色光阻层材料吸收，从而导致量子点彩膜层出光较弱的问题。\n\n[0005]因此，现有量子点彩膜技术中，因量子点材料受激发而发光时，部分光会被黑色光阻层材料吸收，从而导致的量子点彩膜层出光效率较低的问题需要解决。\n\n发明内容\n\n[0006]为了解决上述问题，本发明利用一种自然现象，即：当一带有颗粒溶质的液滴滴在一物体表面一处时，在几种作用力的相互较劲之下会形成一由中心流向边缘的液体流，造成所述液体流几乎可以把所有的颗粒溶质带到该处边缘的一种现象，这种自然现象名为咖啡环效应(coffee-ring effect)，最早由芝加哥大学的研究团队于1997年在自然期刊(Nature)发表。\n\n[0007]本发明的具体做法为预先在阻隔层的表面打印散射墨水，利用所述散射墨水在所述阻隔层的表面上的咖啡环效应和所述散射墨水与所述第二黑色光阻层的材料亲和力更强的特性，使所述散射墨水中的颗粒溶质(散射粒子)在阻隔层与所述第二黑色光阻层底部交界处的边缘聚集并沿着一斜面或凹曲面爬坡，从而在所述第二黑色光阻层的侧表面生成一散射膜层。通过此法，我们能够顺利的在第二黑色光阻层的边缘制作一散射层。当量子点彩膜层的量子点材料受激发而发光时，利用所述散射层的反射作用来反射原本应被第二黑色光阻层材料吸收的部分光線，从而达到提升量子点彩膜基板发光效率的目的。\n\n[0008]本发明提供一种量子点彩膜基板，包括：一基板；一彩色滤光层，所述彩色滤光层设置在所述基板之上，所述彩色滤光层包括多个彩色光阻单元和第一黑色光阻层；一阻隔层，所述阻隔层设置在所述彩色滤光层之上；一量子点发光层，所述量子点发光层设置在所述阻隔层之上，所述量子点发光层包括多个量子点发光单元和第二黑色光阻层，每一个量子点发光单元之间通过所述第二黑色光阻层隔开；一散射层，所述散射层设置在所述第二黑色光阻层的与所述多个量子点发光单元相邻接的侧表面；以及一封裝层，所述封裝层设置在所述量子点发光层之上。\n\n[0009]本发明一实施例所述的量子点彩膜基板，其中，所述第二黑色光阻层与所述多个量子点发光单元之任一相邻接的侧表面为一斜面。\n\n[0010]本发明一实施例所述的量子点彩膜基板，其中，所述斜面朝着远离与其相邻接的所述量子点发光单元的方向倾斜。\n\n[0011]本发明一实施例所述的量子点彩膜基板，其中，所述第二黑色光阻层与所述多个量子点发光单元之任一相邻接的侧表面为一凹曲面。\n\n[0012]本发明一实施例所述的量子点彩膜基板，其中，所述散射层的材料包括一基质和一分散于所述基质中的散射粒子。\n\n[0013]本发明一实施例所述的量子点彩膜基板，其中，所述基质包括热固性树脂，所述散射粒子选自二氧化钛、二氧化硅、有机硅化合物、以及聚苯乙烯之至少一种或其组合。\n\n[0014]本发明提供另一种量子点显示装置，所述量子点显示装置包括：一量子点彩膜基板；以及一背光源基板，所述背光源基板与所述量子点彩膜基板相对设置；其中，所述背光源基板选自蓝光有机发光二极管基板、蓝光微型发光二极管基板、或蓝光亚毫米发光二极管基板之任一；以及其中，所述量子点彩膜基板包括：一基板；一彩色滤光层，所述彩色滤光层设置在所述基板之上，所述彩色滤光层包括多个彩色光阻单元和第一黑色光阻层；一阻隔层，所述阻隔层设置在所述彩色滤光层之上；一量子点发光层，所述量子点发光层设置在所述阻隔层之上，所述量子点发光层包括多个量子点发光单元和第二黑色光阻层，每一个量子点发光单元之间通过所述第二黑色光阻层隔开；一散射层，所述散射层设置在所述第二黑色光阻层的与所述多个量子点发光单元相邻接的侧表面；以及一封裝层，所述封裝层设置在所述量子点发光层之上。\n\n[0015]本发明一实施例所述的量子点显示装置，其中，所述第二黑色光阻层与所述多个量子点发光单元之任一相邻接的侧表面为一凹曲面。\n\n[0016]本发明一实施例所述的量子点显示装置，其中，所述散射层的材料包括一基质和一分散于所述基质中的散射粒子。\n\n[0017]本发明一实施例所述的量子点显示装置，其中，所述基质包括热固性树脂，所述散射粒子选自二氧化钛、二氧化硅、有机硅化合物、以及聚苯乙烯之任一或其组合。.\n\n[0018]本发明进一步提供一种量子点彩膜基板的制造方法，包括：\n\n[0019]提供一基板，在所述基板上形成一彩色滤光层和一第一黑色光阻层；在所述彩色滤光层和所述第一黑色光阻层上形成一阻隔层；在所述阻隔层上形成一第二黑色光阻层，所述第二黑色光阻层定义有多个凹槽；在所述多个凹槽的底面打印散射墨水；静置所述基板使所述散射墨水聚集在所述多个凹槽的侧表面；对聚集在所述多个凹槽的侧表面的所述散射墨水进行紫外光固化以形成一散射层；在所述多个凹槽的内部形成一量子点发光层；以及在所述量子点发光层上形成一封装层。\n\n[0020]本发明提出的所述的量子点彩膜基板和所述量子点显示装置，通过精准的喷墨打印技术(inkjet printing，IJP)，在所述阻隔层的表面打印一种散射墨水，利用所述散射墨水在所述阻隔层的表面上发生的咖啡环效应和所述散射墨水与所述第二黑色光阻层的材料亲和力更强的特性，使所述散射墨水在阻隔层与所述第二黑色光阻层底部交界处的边缘聚集并沿着一凹曲面爬坡，从而在所述第二黑色光阻层的侧表面生成一散射膜层。通过此法，我们能够顺利的在第二黑色光阻层的边缘制作一散射层。当量子点彩膜层的量子点材料受激而发光时，利用所述散射层的反射作用来反射原本应被第二黑色光阻层材料吸收的部分光，从而最终达到提升量子点彩膜基板发光效率的目的。\n\n附图说明\n\n[0021]图1为本发明第一实施例的量子点彩膜基板的截面结构示意图；\n\n[0022]图2为本发明第二实施例的量子点彩膜基板的截面结构示意图；\n\n[0023]图3为本发明第二实施例的量子点彩膜基板的第二黑色光阻层在制作散射层前的截面结构的局部放大示意图；\n\n[0024]图4为本发明第三实施例的量子点显示装置的截面结构示意图；以及\n\n[0025]图5为本发明第一实施例中的第二黑色光阻层在制作散射层后的SEM照片；以及\n\n[0026]图6为本发明所述的量子点彩膜基板的制造方法的流程图。\n\n具体实施方式\n\n[0027]下面结合附图对本发明实施例提供的量子点彩膜基板及其制造方法、以及量子点显示装置做详细说明。显然，所描述的实施例仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0028]以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在附图中，为了清晰理解和便于描述，夸大了一些层的厚度和一些元件的尺寸。即附图中示出的每个元件的尺寸和厚度是任意示出的，但是本申请不限于此。\n\n[0029]请参照图1，图1示出本发明第一实施例的量子点彩膜基板10，所述量子点彩膜基板10包括：一基板100、一彩色滤光层110、一阻隔层120、一量子点发光层130、一散射层135以及一封裝层140。所述彩色滤光层110设置在所述基板100之上，所述彩色滤光层110包括彩色光阻单元111、彩色光阻单元112、彩色光阻单元113以及第一黑色光阻层114。具体地，所述彩色光阻单元111、所述彩色光阻单元112以及所述彩色光阻单元113可为红色光阻单元、绿色光阻单元以及蓝色光阻单元。所述阻隔层120设置在所述彩色滤光层110之上。所述阻隔层120较佳由二氧化硅(SiO2)或硅氮化物(SiNx)等透明度较佳的材料所组成。所述量子点发光层130设置在所述阻隔层120之上，所述量子点发光层130由量子点材料所组成。所述量子点材料较佳可为例如硅量子点、锗量子点、硫化镉量子点或硒化镉量子点等，本发明对此不作任何限制。所述量子点发光层130包括量子点发光单元131、量子点发光单元132、透光层133以及第二黑色光阻层134。具体地，所述量子点发光单元131、以及所述量子点发光单元132可为红色量子点发光单元、以及绿色量子点发光单元，每一个量子点发光单元之间通过所述第二黑色光阻层134隔开，用以避免不同颜色的量子点发光单元受激发后发出的光线相互串扰。在一具体实施例中，所述量子点发光单元131、所述量子点发光单元132以及所述透光层133皆为一梯形椎体形状。所述散射层135设置在所述第二黑色光阻层134的与所述多个量子点发光单元(131，132)及透光层133相邻接的侧表面。所述封装层140设置在所述量子点发光层130之上，以确保所述量子点发光层130不会受到水气或其它物质的侵入而被破坏。具体地，所述多个量子点发光单元(131，132)及透光层133在所述基板100上的投影与所述多个彩色光阻单元(111，112，113)在所述基板100上的投影一一对应。每一所述多个量子点发光单元(131，132)及透光层133的出光面的面积小于或等于每一所述多个彩色光阻单元(111，112，113)的光接受面的面积，以确保每一所述多个量子点发光单元受激发后发出的色光皆能通过彩色光阻单元。\n\n[0030]在一较佳实施例中，所述第二黑色光阻层134与所述多个量子点发光单元(131，132)及透光层133之任一相邻接的侧表面为一斜面。\n\n[0031]在一较佳实施例中，所述斜面朝着远离与其相邻接的量子点发光单元(131，132)或透光层133的方向倾斜。\n\n[0032]在一较佳实施例中，所述散射层135的材料主要包括一基质和一分散于所述基质中的散射粒子。\n\n[0033]在一较佳实施例中，所述基质可包括一热固性树脂，例如丙烯酸树脂，所述散射粒子可选自具有散射特性的粒子材料，例如：二氧化钛、二氧化硅、有机硅化合物、以及聚苯乙烯之至少一种或其组合。\n\n[0034]在上述实施例中，所述散射层135的具体设置方法为：\n\n[0035]在设置所述量子点发光层130之前，预先将散射墨水液滴打印在所述第二黑色光阻层134的凹槽中的所述阻隔层120的表面上。具体地，所述散射墨水的配方包括散射粒子、丙烯酸树脂、光引发剂以及溶剂等。如前述，所述散射粒子选自二氧化钛、二氧化硅、有机硅化合物、以及聚苯乙烯等具有散射作用的粒子之至少一种或其组合。具体地，所述散射粒子可选自二氧化钛和二氧化硅。混合的比例可以是：以重量计，二氧化钛占92％，二氧化硅占8％。由于二氧化钛具有很好的散射性，其作为散射粒子可以发挥很好的散射效果，同时二氧化硅除了亦具有很好的散射性之外，还具有抗结块的功效，因此所述二氧化硅在包括所述二氧化钛的散射墨水中可以作为抗结块剂，用以防止二氧化钛在所述散射墨水溶剂中结块而影响其散射性能的发挥。所述溶剂为高级烷烃(多于10个碳原子)。以重量计，所述溶剂占所述散射墨水液滴的10％或以上。此外，所述散射墨水必须包括光引发剂，用于后续以照射紫外光方式将散射墨水固化而形成散射层135。\n\n[0036]承上，当所述散射墨水液滴打印在所述第二黑色光阻层134的凹槽中的所述阻隔层120的表面上后，在咖啡环效应的作用下，所述散射墨水在所述凹槽中的所述阻隔层120的一处表面上会形成一由中心流向该处边缘的液体流，该液体流几乎可以把所有散射墨水中的颗粒溶质(散射粒子)带到该处的所述第二黑色光阻层134的边缘。在此状况下，由于在所述阻隔层120表面上的所述第二黑色光阻层134具有倾斜方向相同于液体流流动方向的斜面，而有助于所述散射墨水可以较容易爬坡而附着于所述第二黑色光阻层134的侧表面。\n\n[0037]请参照图2，图2示出本发明第二实施例的量子点彩膜基板10’。类似前述的第一实施例，所述量子点彩膜基板10’包括：一基板100、一彩色滤光层110、一阻隔层120、一量子点发光层130’、一散射层135’以及一封裝层140。所述彩色滤光层110设置在所述基板100之上，所述彩色滤光层110包括彩色光阻单元111、彩色光阻单元112、彩色光阻单元113以及第一黑色光阻层114。具体地，所述彩色光阻单元111、所述彩色光阻单元112以及所述彩色光阻单元113可为红色光阻单元、绿色光阻单元以及蓝色光阻单元。所述阻隔层120设置在所述彩色滤光层110之上。所述阻隔层120较佳由二氧化硅(SiO2)或硅氮化物(SiNx)等透明度较佳的材料所组成。所述量子点发光层130’设置在所述阻隔层120之上，所述量子点发光层130’由量子点材料所组成。所述量子点材料较佳可为例如硅量子点、锗量子点、硫化镉量子点或硒化镉量子点等，本发明对此不作任何限制。所述量子点发光层130’包括量子点发光单元131、量子点发光单元132、透光层133以及第二黑色光阻层134’。具体地，所述量子点发光单元131、以及所述量子点发光单元132133可为红色量子点发光单元、以及绿色量子点发光单元，每一个量子点发光单元及透光层133之间通过所述第二黑色光阻层134隔开，用以避免不同颜色的量子点发光单元受激发后发出的光线相互串扰。在一具体实施例中，所述量子点发光单元131、所述量子点发光单元132以及透光层133皆为一梯形四面椎体形状。\n\n[0038]在一较佳实施例中，所述第二黑色光阻层134’与所述量子点发光单元(131，132)及透光层133相邻接的侧表面为一凹曲面。请一并参照图3，图3示出本发明第二实施例的量子点彩膜基板10’的第二黑色光阻层134’在制作散射层135’前的截面结构的局部放大示意图。从图3可以清楚看出所述第二黑色光阻层134’的侧面为一凹曲面。具体地，在所述第二黑色光阻层134’的凹曲面上的中点上的一切线与所述阻隔层120的水平面的夹角θ介于45至60度之间。所述凹曲面的坡度比，即：坡面垂直高度和水平宽度的比介于1：1至1.73：1之间。相较于第一实施例中的所述第二黑色光阻层134的侧面为一平直斜面，本实施例中的所述第二黑色光阻层134’的侧面为一凹曲面，更加有利于散射层135’的形成。\n\n[0039]在本实施例中，此种设计下的第二黑色光阻层134’的侧面，由于其坡度较为平缓，当一所述散射墨水液滴打印在所述第二黑色光阻层134’的凹槽中的所述阻隔层120表面上一处的表面后，在咖啡环效应的作用下，所述散射墨水液滴在所述第二黑色光阻层134’的凹槽中的该处表面上会形成一由中心流向该处边缘的液体流，该液体流几乎可以把所有散射墨水液滴中的散射颗粒溶质带到该处的第二黑色光阻层134’的边缘。在此状况下，由于在所述阻隔层120表面上的所述第二黑色光阻层134’的侧面为一坡度较为平缓的凹曲面，更有利于所述散射墨水液滴中的散射颗粒溶质可以爬坡而附着于所述第二黑色光阻层134’的侧表面。\n\n[0040]请参照图4，图4示出本发明第三实施例的量子点显示装置1。所述量子点显示装置1包括：一量子点彩膜基板10’和一背光源基板200。请一并参照图2和图4，所述量子点彩膜基板10’包括：一基板100、一彩色滤光层110、一阻隔层120、一量子点发光层130’、一散射层135’以及一封装层140。所述背光源基板200与所述量子点彩膜基板10’相对设置。具体地，所述背光源基板200包括一玻璃基板220和一有机发光二极体器件层210。在本实施例中，所述有机发光二极体器件层210包括一蓝光有机发光二极管器件。具体地，所述有机发光二极体器件层210包括：一阳极层、一空穴注入层、一空穴传输层、一有机电致发光层、一电子传输层以及一阴极层(图中未示出个层别)。\n\n[0041]请一并参照图2和图4，在一较佳实施例中，所述第二黑色光阻层134’与所述多个量子点发光单元(131，132)及透光层133相邻接的侧表面为一凹曲面。\n\n[0042]在一较佳实施例中，所述散射层135’的材料包括一基质和一分散于所述基质中的散射粒子。\n\n[0043]在一较佳实施例中，所述基质包括一热固性树脂，例如丙烯酸树脂，所述散射粒子选自二氧化钛、二氧化硅、有机硅化合物、以及聚苯乙烯之任一或其组合。\n\n[0044]在本实施例中，所述背光源基板200提供一蓝色光源至所述量子点彩膜基板10’，所述蓝色光源激发所述量子点发光单元(131，132)，使其分别发出红光、以及绿光，透光层133则用以透过蓝光。由于所述第二黑色光阻层134’的侧面形成有散射层135’。利用所述散射层135’的反射作用来反射原本应被第二黑色光阻层134’材料吸收的部分光线，从而最终达到提升所述量子点显示装置1的发光效率的目的。\n\n[0045]请参照图5，图5为一扫描式电子显微镜(scanning electron microscope，SEM)拍摄的照片。该SEM照片示出利用前述的咖啡环效应以打印散射墨水的方法在第二黑色光阻层的侧面形成一散射层。本发明利用所述散射层反射量子点材料激发后而发出的光线，可以有效地减少被第二黑色光阻层材料吸收的激发光，从而提高量子点彩膜基板的出光效率。\n\n[0046]请参照图6，图6示出本发明所述的量子点彩膜基板的制造方法的流程图，包括：提供一基板，在所述基板上形成一彩色滤光层和一第一黑色光阻层；在所述彩色滤光层和所述第一黑色光阻层上形成一阻隔层；在所述阻隔层上形成一第二黑色光阻层，所述第二黑色光阻层定义有多个凹槽；在所述多个凹槽的底面打印散射墨水；静置所述基板使所述散射墨水聚集在所述多个凹槽的侧表面；对聚集在所述多个凹槽的侧表面的所述散射墨水进行紫外光固化以形成一散射层；在所述多个凹槽的内部形成一量子点发光层；以及在所述量子点发光层上形成一封装层。具体地，所述基板可为一玻璃基板，所述彩色滤光层和所述第一黑色光阻层以常规流程形成。所述阻隔层具体可通过物理或化学气相沉积方式形成。所述第二黑色光阻层可通过光阻涂布、曝光、及显影的方式形成，所述第二黑色光阻层定义有多个凹槽，所述多个凹槽内部的侧面较佳为一凹曲面。所述散射墨水的配方包括散射粒子、丙烯酸树脂、光引发剂以及溶剂等。如前述，所述散射粒子选自二氧化钛、二氧化硅、有机硅化合物、以及聚苯乙烯等具有散射作用的粒子之一种或其组合。所述溶剂为高级烷烃(多于10个碳原子)。以重量计，所述溶剂占所述散射墨水液滴的10％或以上。\n\n[0047]如前所述，如本发明图1及图2所示，本发明第一实施例将所述第二黑色光阻层134的侧面设计为一斜面，所述斜面朝着远离与其相邻接的量子点发光单元(131，132)或透光层133的方向倾斜。亦即，所述量子点发光单元132以及所述透光层133的截面为一倒梯形形状。\n\n[0048]更进一步，本发明第二实施例将所述第二黑色光阻层134’的侧面设计为一凹曲面。这两种设计皆有利于散射层135(135’)的形成。其中，相较于第一实施例中的所述第二黑色光阻层134的侧面为一斜面，第二实施例中的所述第二黑色光阻层134’的侧面为一凹曲面，更加有利于散射层135’的形成。因为在此种设计下的第二黑色光阻层134’的侧面，由于其坡度较为平缓，当所述散射墨水液滴打印在所述第二黑色光阻层134’的凹槽中的所述阻隔层120的表面上后，在咖啡环效应的作用下，所述散射墨水液滴在所述凹槽中的阻隔层120的表面上会形成一由中心流向该处边缘的液体流，该液体流几乎可以把散射墨水液滴中的所有散射颗粒溶质带到该处的第二黑色光阻层的边缘。在此状况下，由于设置在所述阻隔层120表面上的所述第二黑色光阻层134’具有坡度较为平缓的凹曲面，特别有助于所述散射墨水可以更容易爬坡而附着于所述第二黑色光阻层134’的侧表面而形成所述散射层135’。\n\n[0049]本发明利用咖啡环效应，通过在第二黑色光阻层与所述多个量子点发光单元相邻接的侧表面设置散射层，当量子点彩膜层的量子点材料受激发而发光时，借助所述散射层的反射作用来反射原本应被第二黑色光阻层材料吸收的部分光线，从而最终达到提升量子点彩膜基板发光效率的目的。\n\n[0050]以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。', '[0001]本发明涉及显示技术领域，尤其是涉及一种量子点彩膜基板及其制造方法、以及一种量子点显示装置。\n\n背景技术\n\n[0002]量子点(quantum dots，QDs)是一种奈米微晶体半导体材料，通常呈胶体状态，量子点的粒径一般介于1至20nm之间，常见的量子点由IV、II-VI、IV-VI或III-V元素组成，例如硅量子点、锗量子点、硫化镉量子点以及硒化镉量子点等。由于量子限域效应和表面效应，量子点具有激发光谱宽且连续分布、发射光谱窄且对称、发光颜色可随量子点的尺寸调整以及光化学的稳定性高等优越的发光特性，因此实现了更好的显色指数。量子点主要应用于电子、光电、光学、以及生命科学等领域。\n\n[0003]量子点彩膜基板能通过蓝色背光源，例如蓝光有机发光二极管(blue organiclight emitting diode，OLED)、蓝光微型发光二极管(blue micro light emittingdiode，micro-LED)、或蓝光亚毫米发光二极管(blue sub-millimeter light emittingdiode，mini-LED)激发由量子点所组成的色阻发光。这种包括量子点彩膜基板和发光二极管器件的量子点显示装置不仅具备发光二极管器件的自主发光、薄型化和柔性的特性而且还具备量子点高色域的优点。所述量子点显示装置利用量子点彩膜基板中的量子点的光致发光特性，把背光源发出的蓝光转换成红光和绿光，从而实现全彩化显示的目的。\n\n[0004]量子点彩膜基板主要由滤色层(color filter)和量子点膜层组成，其中的量子点膜层可利用(inkjet printing，IJP)喷墨打印的方式来制作。IJP的技术优势在于能够控制滴下墨水的位置及体积大小，从而实现在像素尺寸级别的区域进行打印成膜。然而，由于量子点彩膜基板中的量子点材料是打印在基板中的黑色光阻层坝堤(bank)内部，因为黑色光阻层为黑色材料，当量子点材料受激发而发光时，部分光会被黑色光阻层材料吸收，从而导致量子点彩膜层出光较弱的问题。\n\n[0005]因此，现有量子点彩膜技术中，因量子点材料受激发而发光时，部分光会被黑色光阻层材料吸收，从而导致的量子点彩膜层出光效率较低的问题需要解决。\n\n发明内容\n\n[0006]为了解决上述问题，本发明利用一种自然现象，即：当一带有颗粒溶质的液滴滴在一物体表面一处时，在几种作用力的相互较劲之下会形成一由中心流向边缘的液体流，造成所述液体流几乎可以把所有的颗粒溶质带到该处边缘的一种现象，这种自然现象名为咖啡环效应(coffee-ring effect)，最早由芝加哥大学的研究团队于1997年在自然期刊(Nature)发表。\n\n[0007]本发明的具体做法为预先在阻隔层的表面打印散射墨水，利用所述散射墨水在所述阻隔层的表面上的咖啡环效应和所述散射墨水与所述第二黑色光阻层的材料亲和力更强的特性，使所述散射墨水中的颗粒溶质(散射粒子)在阻隔层与所述第二黑色光阻层底部交界处的边缘聚集并沿着一斜面或凹曲面爬坡，从而在所述第二黑色光阻层的侧表面生成一散射膜层。通过此法，我们能够顺利的在第二黑色光阻层的边缘制作一散射层。当量子点彩膜层的量子点材料受激发而发光时，利用所述散射层的反射作用来反射原本应被第二黑色光阻层材料吸收的部分光線，从而达到提升量子点彩膜基板发光效率的目的。\n\n[0008]本发明提供一种量子点彩膜基板，包括：一基板；一彩色滤光层，所述彩色滤光层设置在所述基板之上，所述彩色滤光层包括多个彩色光阻单元和第一黑色光阻层；一阻隔层，所述阻隔层设置在所述彩色滤光层之上；一量子点发光层，所述量子点发光层设置在所述阻隔层之上，所述量子点发光层包括多个量子点发光单元和第二黑色光阻层，每一个量子点发光单元之间通过所述第二黑色光阻层隔开；一散射层，所述散射层设置在所述第二黑色光阻层的与所述多个量子点发光单元相邻接的侧表面；以及一封裝层，所述封裝层设置在所述量子点发光层之上。\n\n[0009]本发明一实施例所述的量子点彩膜基板，其中，所述第二黑色光阻层与所述多个量子点发光单元之任一相邻接的侧表面为一斜面。\n\n[0010]本发明一实施例所述的量子点彩膜基板，其中，所述斜面朝着远离与其相邻接的所述量子点发光单元的方向倾斜。\n\n[0011]本发明一实施例所述的量子点彩膜基板，其中，所述第二黑色光阻层与所述多个量子点发光单元之任一相邻接的侧表面为一凹曲面。\n\n[0012]本发明一实施例所述的量子点彩膜基板，其中，所述散射层的材料包括一基质和一分散于所述基质中的散射粒子。\n\n[0013]本发明一实施例所述的量子点彩膜基板，其中，所述基质包括热固性树脂，所述散射粒子选自二氧化钛、二氧化硅、有机硅化合物、以及聚苯乙烯之至少一种或其组合。\n\n[0014]本发明提供另一种量子点显示装置，所述量子点显示装置包括：一量子点彩膜基板；以及一背光源基板，所述背光源基板与所述量子点彩膜基板相对设置；其中，所述背光源基板选自蓝光有机发光二极管基板、蓝光微型发光二极管基板、或蓝光亚毫米发光二极管基板之任一；以及其中，所述量子点彩膜基板包括：一基板；一彩色滤光层，所述彩色滤光层设置在所述基板之上，所述彩色滤光层包括多个彩色光阻单元和第一黑色光阻层；一阻隔层，所述阻隔层设置在所述彩色滤光层之上；一量子点发光层，所述量子点发光层设置在所述阻隔层之上，所述量子点发光层包括多个量子点发光单元和第二黑色光阻层，每一个量子点发光单元之间通过所述第二黑色光阻层隔开；一散射层，所述散射层设置在所述第二黑色光阻层的与所述多个量子点发光单元相邻接的侧表面；以及一封裝层，所述封裝层设置在所述量子点发光层之上。\n\n[0015]本发明一实施例所述的量子点显示装置，其中，所述第二黑色光阻层与所述多个量子点发光单元之任一相邻接的侧表面为一凹曲面。\n\n[0016]本发明一实施例所述的量子点显示装置，其中，所述散射层的材料包括一基质和一分散于所述基质中的散射粒子。\n\n[0017]本发明一实施例所述的量子点显示装置，其中，所述基质包括热固性树脂，所述散射粒子选自二氧化钛、二氧化硅、有机硅化合物、以及聚苯乙烯之任一或其组合。.\n\n[0018]本发明进一步提供一种量子点彩膜基板的制造方法，包括：\n\n[0019]提供一基板，在所述基板上形成一彩色滤光层和一第一黑色光阻层；在所述彩色滤光层和所述第一黑色光阻层上形成一阻隔层；在所述阻隔层上形成一第二黑色光阻层，所述第二黑色光阻层定义有多个凹槽；在所述多个凹槽的底面打印散射墨水；静置所述基板使所述散射墨水聚集在所述多个凹槽的侧表面；对聚集在所述多个凹槽的侧表面的所述散射墨水进行紫外光固化以形成一散射层；在所述多个凹槽的内部形成一量子点发光层；以及在所述量子点发光层上形成一封装层。\n\n[0020]本发明提出的所述的量子点彩膜基板和所述量子点显示装置，通过精准的喷墨打印技术(inkjet printing，IJP)，在所述阻隔层的表面打印一种散射墨水，利用所述散射墨水在所述阻隔层的表面上发生的咖啡环效应和所述散射墨水与所述第二黑色光阻层的材料亲和力更强的特性，使所述散射墨水在阻隔层与所述第二黑色光阻层底部交界处的边缘聚集并沿着一凹曲面爬坡，从而在所述第二黑色光阻层的侧表面生成一散射膜层。通过此法，我们能够顺利的在第二黑色光阻层的边缘制作一散射层。当量子点彩膜层的量子点材料受激而发光时，利用所述散射层的反射作用来反射原本应被第二黑色光阻层材料吸收的部分光，从而最终达到提升量子点彩膜基板发光效率的目的。\n\n附图说明\n\n[0021]图1为本发明第一实施例的量子点彩膜基板的截面结构示意图；\n\n[0022]图2为本发明第二实施例的量子点彩膜基板的截面结构示意图；\n\n[0023]图3为本发明第二实施例的量子点彩膜基板的第二黑色光阻层在制作散射层前的截面结构的局部放大示意图；\n\n[0024]图4为本发明第三实施例的量子点显示装置的截面结构示意图；以及\n\n[0025]图5为本发明第一实施例中的第二黑色光阻层在制作散射层后的SEM照片；以及\n\n[0026]图6为本发明所述的量子点彩膜基板的制造方法的流程图。\n\n具体实施方式\n\n[0027]下面结合附图对本发明实施例提供的量子点彩膜基板及其制造方法、以及量子点显示装置做详细说明。显然，所描述的实施例仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0028]以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在附图中，为了清晰理解和便于描述，夸大了一些层的厚度和一些元件的尺寸。即附图中示出的每个元件的尺寸和厚度是任意示出的，但是本申请不限于此。\n\n[0029]请参照图1，图1示出本发明第一实施例的量子点彩膜基板10，所述量子点彩膜基板10包括：一基板100、一彩色滤光层110、一阻隔层120、一量子点发光层130、一散射层135以及一封裝层140。所述彩色滤光层110设置在所述基板100之上，所述彩色滤光层110包括彩色光阻单元111、彩色光阻单元112、彩色光阻单元113以及第一黑色光阻层114。具体地，所述彩色光阻单元111、所述彩色光阻单元112以及所述彩色光阻单元113可为红色光阻单元、绿色光阻单元以及蓝色光阻单元。所述阻隔层120设置在所述彩色滤光层110之上。所述阻隔层120较佳由二氧化硅(SiO2)或硅氮化物(SiNx)等透明度较佳的材料所组成。所述量子点发光层130设置在所述阻隔层120之上，所述量子点发光层130由量子点材料所组成。所述量子点材料较佳可为例如硅量子点、锗量子点、硫化镉量子点或硒化镉量子点等，本发明对此不作任何限制。所述量子点发光层130包括量子点发光单元131、量子点发光单元132、透光层133以及第二黑色光阻层134。具体地，所述量子点发光单元131、以及所述量子点发光单元132可为红色量子点发光单元、以及绿色量子点发光单元，每一个量子点发光单元之间通过所述第二黑色光阻层134隔开，用以避免不同颜色的量子点发光单元受激发后发出的光线相互串扰。在一具体实施例中，所述量子点发光单元131、所述量子点发光单元132以及所述透光层133皆为一梯形椎体形状。所述散射层135设置在所述第二黑色光阻层134的与所述多个量子点发光单元(131，132)及透光层133相邻接的侧表面。所述封装层140设置在所述量子点发光层130之上，以确保所述量子点发光层130不会受到水气或其它物质的侵入而被破坏。具体地，所述多个量子点发光单元(131，132)及透光层133在所述基板100上的投影与所述多个彩色光阻单元(111，112，113)在所述基板100上的投影一一对应。每一所述多个量子点发光单元(131，132)及透光层133的出光面的面积小于或等于每一所述多个彩色光阻单元(111，112，113)的光接受面的面积，以确保每一所述多个量子点发光单元受激发后发出的色光皆能通过彩色光阻单元。\n\n[0030]在一较佳实施例中，所述第二黑色光阻层134与所述多个量子点发光单元(131，132)及透光层133之任一相邻接的侧表面为一斜面。\n\n[0031]在一较佳实施例中，所述斜面朝着远离与其相邻接的量子点发光单元(131，132)或透光层133的方向倾斜。\n\n[0032]在一较佳实施例中，所述散射层135的材料主要包括一基质和一分散于所述基质中的散射粒子。\n\n[0033]在一较佳实施例中，所述基质可包括一热固性树脂，例如丙烯酸树脂，所述散射粒子可选自具有散射特性的粒子材料，例如：二氧化钛、二氧化硅、有机硅化合物、以及聚苯乙烯之至少一种或其组合。\n\n[0034]在上述实施例中，所述散射层135的具体设置方法为：\n\n[0035]在设置所述量子点发光层130之前，预先将散射墨水液滴打印在所述第二黑色光阻层134的凹槽中的所述阻隔层120的表面上。具体地，所述散射墨水的配方包括散射粒子、丙烯酸树脂、光引发剂以及溶剂等。如前述，所述散射粒子选自二氧化钛、二氧化硅、有机硅化合物、以及聚苯乙烯等具有散射作用的粒子之至少一种或其组合。具体地，所述散射粒子可选自二氧化钛和二氧化硅。混合的比例可以是：以重量计，二氧化钛占92％，二氧化硅占8％。由于二氧化钛具有很好的散射性，其作为散射粒子可以发挥很好的散射效果，同时二氧化硅除了亦具有很好的散射性之外，还具有抗结块的功效，因此所述二氧化硅在包括所述二氧化钛的散射墨水中可以作为抗结块剂，用以防止二氧化钛在所述散射墨水溶剂中结块而影响其散射性能的发挥。所述溶剂为高级烷烃(多于10个碳原子)。以重量计，所述溶剂占所述散射墨水液滴的10％或以上。此外，所述散射墨水必须包括光引发剂，用于后续以照射紫外光方式将散射墨水固化而形成散射层135。\n\n[0036]承上，当所述散射墨水液滴打印在所述第二黑色光阻层134的凹槽中的所述阻隔层120的表面上后，在咖啡环效应的作用下，所述散射墨水在所述凹槽中的所述阻隔层120的一处表面上会形成一由中心流向该处边缘的液体流，该液体流几乎可以把所有散射墨水中的颗粒溶质(散射粒子)带到该处的所述第二黑色光阻层134的边缘。在此状况下，由于在所述阻隔层120表面上的所述第二黑色光阻层134具有倾斜方向相同于液体流流动方向的斜面，而有助于所述散射墨水可以较容易爬坡而附着于所述第二黑色光阻层134的侧表面。\n\n[0037]请参照图2，图2示出本发明第二实施例的量子点彩膜基板10’。类似前述的第一实施例，所述量子点彩膜基板10’包括：一基板100、一彩色滤光层110、一阻隔层120、一量子点发光层130’、一散射层135’以及一封裝层140。所述彩色滤光层110设置在所述基板100之上，所述彩色滤光层110包括彩色光阻单元111、彩色光阻单元112、彩色光阻单元113以及第一黑色光阻层114。具体地，所述彩色光阻单元111、所述彩色光阻单元112以及所述彩色光阻单元113可为红色光阻单元、绿色光阻单元以及蓝色光阻单元。所述阻隔层120设置在所述彩色滤光层110之上。所述阻隔层120较佳由二氧化硅(SiO2)或硅氮化物(SiNx)等透明度较佳的材料所组成。所述量子点发光层130’设置在所述阻隔层120之上，所述量子点发光层130’由量子点材料所组成。所述量子点材料较佳可为例如硅量子点、锗量子点、硫化镉量子点或硒化镉量子点等，本发明对此不作任何限制。所述量子点发光层130’包括量子点发光单元131、量子点发光单元132、透光层133以及第二黑色光阻层134’。具体地，所述量子点发光单元131、以及所述量子点发光单元132133可为红色量子点发光单元、以及绿色量子点发光单元，每一个量子点发光单元及透光层133之间通过所述第二黑色光阻层134隔开，用以避免不同颜色的量子点发光单元受激发后发出的光线相互串扰。在一具体实施例中，所述量子点发光单元131、所述量子点发光单元132以及透光层133皆为一梯形四面椎体形状。\n\n[0038]在一较佳实施例中，所述第二黑色光阻层134’与所述量子点发光单元(131，132)及透光层133相邻接的侧表面为一凹曲面。请一并参照图3，图3示出本发明第二实施例的量子点彩膜基板10’的第二黑色光阻层134’在制作散射层135’前的截面结构的局部放大示意图。从图3可以清楚看出所述第二黑色光阻层134’的侧面为一凹曲面。具体地，在所述第二黑色光阻层134’的凹曲面上的中点上的一切线与所述阻隔层120的水平面的夹角θ介于45至60度之间。所述凹曲面的坡度比，即：坡面垂直高度和水平宽度的比介于1：1至1.73：1之间。相较于第一实施例中的所述第二黑色光阻层134的侧面为一平直斜面，本实施例中的所述第二黑色光阻层134’的侧面为一凹曲面，更加有利于散射层135’的形成。\n\n[0039]在本实施例中，此种设计下的第二黑色光阻层134’的侧面，由于其坡度较为平缓，当一所述散射墨水液滴打印在所述第二黑色光阻层134’的凹槽中的所述阻隔层120表面上一处的表面后，在咖啡环效应的作用下，所述散射墨水液滴在所述第二黑色光阻层134’的凹槽中的该处表面上会形成一由中心流向该处边缘的液体流，该液体流几乎可以把所有散射墨水液滴中的散射颗粒溶质带到该处的第二黑色光阻层134’的边缘。在此状况下，由于在所述阻隔层120表面上的所述第二黑色光阻层134’的侧面为一坡度较为平缓的凹曲面，更有利于所述散射墨水液滴中的散射颗粒溶质可以爬坡而附着于所述第二黑色光阻层134’的侧表面。\n\n[0040]请参照图4，图4示出本发明第三实施例的量子点显示装置1。所述量子点显示装置1包括：一量子点彩膜基板10’和一背光源基板200。请一并参照图2和图4，所述量子点彩膜基板10’包括：一基板100、一彩色滤光层110、一阻隔层120、一量子点发光层130’、一散射层135’以及一封装层140。所述背光源基板200与所述量子点彩膜基板10’相对设置。具体地，所述背光源基板200包括一玻璃基板220和一有机发光二极体器件层210。在本实施例中，所述有机发光二极体器件层210包括一蓝光有机发光二极管器件。具体地，所述有机发光二极体器件层210包括：一阳极层、一空穴注入层、一空穴传输层、一有机电致发光层、一电子传输层以及一阴极层(图中未示出个层别)。\n\n[0041]请一并参照图2和图4，在一较佳实施例中，所述第二黑色光阻层134’与所述多个量子点发光单元(131，132)及透光层133相邻接的侧表面为一凹曲面。\n\n[0042]在一较佳实施例中，所述散射层135’的材料包括一基质和一分散于所述基质中的散射粒子。\n\n[0043]在一较佳实施例中，所述基质包括一热固性树脂，例如丙烯酸树脂，所述散射粒子选自二氧化钛、二氧化硅、有机硅化合物、以及聚苯乙烯之任一或其组合。\n\n[0044]在本实施例中，所述背光源基板200提供一蓝色光源至所述量子点彩膜基板10’，所述蓝色光源激发所述量子点发光单元(131，132)，使其分别发出红光、以及绿光，透光层133则用以透过蓝光。由于所述第二黑色光阻层134’的侧面形成有散射层135’。利用所述散射层135’的反射作用来反射原本应被第二黑色光阻层134’材料吸收的部分光线，从而最终达到提升所述量子点显示装置1的发光效率的目的。\n\n[0045]请参照图5，图5为一扫描式电子显微镜(scanning electron microscope，SEM)拍摄的照片。该SEM照片示出利用前述的咖啡环效应以打印散射墨水的方法在第二黑色光阻层的侧面形成一散射层。本发明利用所述散射层反射量子点材料激发后而发出的光线，可以有效地减少被第二黑色光阻层材料吸收的激发光，从而提高量子点彩膜基板的出光效率。\n\n[0046]请参照图6，图6示出本发明所述的量子点彩膜基板的制造方法的流程图，包括：提供一基板，在所述基板上形成一彩色滤光层和一第一黑色光阻层；在所述彩色滤光层和所述第一黑色光阻层上形成一阻隔层；在所述阻隔层上形成一第二黑色光阻层，所述第二黑色光阻层定义有多个凹槽；在所述多个凹槽的底面打印散射墨水；静置所述基板使所述散射墨水聚集在所述多个凹槽的侧表面；对聚集在所述多个凹槽的侧表面的所述散射墨水进行紫外光固化以形成一散射层；在所述多个凹槽的内部形成一量子点发光层；以及在所述量子点发光层上形成一封装层。具体地，所述基板可为一玻璃基板，所述彩色滤光层和所述第一黑色光阻层以常规流程形成。所述阻隔层具体可通过物理或化学气相沉积方式形成。所述第二黑色光阻层可通过光阻涂布、曝光、及显影的方式形成，所述第二黑色光阻层定义有多个凹槽，所述多个凹槽内部的侧面较佳为一凹曲面。所述散射墨水的配方包括散射粒子、丙烯酸树脂、光引发剂以及溶剂等。如前述，所述散射粒子选自二氧化钛、二氧化硅、有机硅化合物、以及聚苯乙烯等具有散射作用的粒子之一种或其组合。所述溶剂为高级烷烃(多于10个碳原子)。以重量计，所述溶剂占所述散射墨水液滴的10％或以上。\n\n[0047]如前所述，如本发明图1及图2所示，本发明第一实施例将所述第二黑色光阻层134的侧面设计为一斜面，所述斜面朝着远离与其相邻接的量子点发光单元(131，132)或透光层133的方向倾斜。亦即，所述量子点发光单元132以及所述透光层133的截面为一倒梯形形状。\n\n[0048]更进一步，本发明第二实施例将所述第二黑色光阻层134’的侧面设计为一凹曲面。这两种设计皆有利于散射层135(135’)的形成。其中，相较于第一实施例中的所述第二黑色光阻层134的侧面为一斜面，第二实施例中的所述第二黑色光阻层134’的侧面为一凹曲面，更加有利于散射层135’的形成。因为在此种设计下的第二黑色光阻层134’的侧面，由于其坡度较为平缓，当所述散射墨水液滴打印在所述第二黑色光阻层134’的凹槽中的所述阻隔层120的表面上后，在咖啡环效应的作用下，所述散射墨水液滴在所述凹槽中的阻隔层120的表面上会形成一由中心流向该处边缘的液体流，该液体流几乎可以把散射墨水液滴中的所有散射颗粒溶质带到该处的第二黑色光阻层的边缘。在此状况下，由于设置在所述阻隔层120表面上的所述第二黑色光阻层134’具有坡度较为平缓的凹曲面，特别有助于所述散射墨水可以更容易爬坡而附着于所述第二黑色光阻层134’的侧表面而形成所述散射层135’。\n\n[0049]本发明利用咖啡环效应，通过在第二黑色光阻层与所述多个量子点发光单元相邻接的侧表面设置散射层，当量子点彩膜层的量子点材料受激发而发光时，借助所述散射层的反射作用来反射原本应被第二黑色光阻层材料吸收的部分光线，从而最终达到提升量子点彩膜基板发光效率的目的。\n\n[0050]以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10981, 24035, '技术领域\n\n[0001]本发明涉及显示设备领域，特别是一种背光模组及其制备方法、显示装置。\n\n背景技术\n\n[0002]采用Mini-LED背光技术的LCD(液晶)显示屏，在亮度、对比度、色彩还原和节能远远优于当今的LCD显示器，甚至可以与AMOLED(有源矩阵有机发光二极管)竞争，同时还能控制生产成本。由于用于面板背光的LED数量大大增加，新技术可以在很大程度上改善LCD屏幕的HDR性能。\n\n[0003]提供光源的背光模组的单区结构如图1所示，该结构会在背光源40的四周印刷一层白色油墨80以减少光的损失，提升光效。但是由于印刷精度的问题，白色油墨80的覆盖位置与背光源40之间会有一定距离，从而产生开窗90，而背光源40所发出的部分光线会在开窗处从背光模组的底面射出，造成光线的损失。\n\n发明内容\n\n[0004]本发明的目的是提供一种背光模组及其制备方法、显示装置，以解决现有技术中由于工艺精度而产生的开窗问题以及开窗所带来的光损失问题。\n\n[0005]为实现上述目的，本发明提供一种背光模组，所述背光模组中包括走线层、绝缘层、背光源以及反光层。所述走线层设于一基板上。所述绝缘层设于所述走线层上。所述背光源设于所述绝缘层上，并与所述走线层电连接。所述反光层设于所述绝缘层上，并围绕所述背光源设置。\n\n[0006]进一步地，所述绝缘层中具有过孔，所述过孔环绕所述背光源设置，所述反光层进一步填充所述过孔。\n\n[0007]进一步地，所述反光层具有一斜面，所述斜面朝向所述背光源。所述斜面与所述反光层位于所述过孔内的底面之间具有一夹角，所述夹角的角度小于90度。\n\n[0008]进一步地，所述背光源包括导电层和灯珠。所述导电层设于所述绝缘层上，并穿过所述绝缘层与所述走线层电连接。所述灯珠设于所述导电层上。\n\n[0009]进一步地，所述灯珠为LED、Mini-LED或Micro-LED中的一种。\n\n[0010]进一步地，所述反光层中包含白色胶材。\n\n[0011]本发明中还提供一种背光模组的制备方法，所述制备方法中包括以下步骤：在一基板上形成走线层；在所述走线层上形成绝缘层；在所述绝缘层上形成背光源和围绕所述背光源的反光层。\n\n[0012]进一步地，在所述绝缘层上形成所述背光源步骤中包括：将所述绝缘层图案化，形成贯穿所述绝缘层的通孔；将所述背光源与所述通孔进行对位操作，使所述背光源穿过所述通孔与所述走线层连接。\n\n[0013]进一步地，在所述绝缘层上形成所述反光层步骤中包括：通过激光将所述绝缘层图案化，形成环绕所述背光源的过孔；在所述过孔远离所述背光源的一侧进行点胶操作，并使白色胶材填充所述过孔；固化所述白胶，形成所述反光层。\n\n[0014]本发明中还提供一种显示装置，所述显示装置中包括如上所述的背光模组。\n\n[0015]本发明的优点是：本发明中所提供的背光模组及其制备方法，通过反光层填充绝缘层中的过孔，从而减少由于开窗问题而造成的光线损失，使背光模组能够以更低的功能达到更高的亮度，进而提供显示装置的显示亮度。\n\n附图说明\n\n[0016]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0017]图1为现有技术中背光模组的层状结构示意图；\n\n[0018]图2为本发明实施例中背光模组的层状结构示意图；\n\n[0019]图3为本发明实施例中背光模组的局部放大示意图；\n\n[0020]图4为本发明实施例中背光模组制备方法的流程示意图；\n\n[0021]图5为本发明实施例中步骤S30中背光模组的层状结构示意图；\n\n[0022]图6为本发明实施例中步骤S30后背光模组的层状结构示意图；\n\n[0023]图7为本发明实施例中步骤S40中背光模组的层状结构示意图。\n\n[0024]图中部件表示如下：\n\n[0025]背光模组1；\n\n[0026]基板10； 走线层20；\n\n[0027]绝缘层30； 背光源40；\n\n[0028]导电层41； 灯珠42；\n\n[0029]反光层50； 过孔60；\n\n[0030]通孔70； 油墨80；\n\n[0031]开窗90。\n\n具体实施方式\n\n[0032]以下参考说明书附图介绍本发明的优选实施例，证明本发明可以实施，所述发明实施例可以向本领域中的技术人员完整介绍本发明，使其技术内容更加清楚和便于理解。本发明可以通过许多不同形式的发明实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例。\n\n[0033]在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。附图所示的每一部件的尺寸和厚度是任意示出的，本发明并没有限定每个组件的尺寸和厚度。为了使图示更清晰，附图中有些地方适当夸大了部件的厚度。\n\n[0034]此外，以下各发明实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定发明实施例。本发明中所提到的方向用语，例如，“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”、“侧面”等，仅是参考附加图式的方向，因此，使用的方向用语是为了更好、更清楚地说明及理解本发明，而不是指示或暗指所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。\n\n[0035]当某些部件被描述为“在”另一部件“上”时，所述部件可以直接置于所述另一部件上；也可以存在一中间部件，所述部件置于所述中间部件上，且所述中间部件置于另一部件上。当一个部件被描述为“安装至”或“连接至”另一部件时，二者可以理解为直接“安装”或“连接”，或者一个部件通过一中间部件间接“安装至”、或“连接至”另一个部件。\n\n[0036]本发明实施例中提供了一种显示装置，所述显示装置中包括一显示面板以及如上所述的背光模组1。所述背光模组1用于为所述显示面板提供显示光源，所述显示面板用于过滤光线以及控制光线的透过与否，从而形成显示画面。所述显示装置可以为任何具有显示功能的电子产品或部件，例如手机、笔记本电脑、平板电脑、电视机等。\n\n[0037]如图2所示，所述背光模组1包括一基板10、一走线层20、一绝缘层30、一反光层50以及若干背光源40。\n\n[0038]所述基板10为绝缘基板，其可以为玻璃基板、石英基板等。所述基板10用于为所述背光模组1提供刚性支撑。\n\n[0039]所述走线层20设于所述基板10的一表面上。所述走线层20中设有若干金属走线，其用于为所述背光源40传输电能。\n\n[0040]所述绝缘层30设置在所述走线层20远离所述基板10的一表面上，其用于绝缘保护所述走线层20中的走线。\n\n[0041]所述背光源40设于所述绝缘层30远离所述走线层20的一表面上，如图3所示，所述背光源40包括导电层41和灯珠42。所述导电层41设于所述绝缘层30上，其底端穿过所述绝缘层30与所述走线层20连接。所述灯珠42设于所述导电层41远离所述绝缘层30的一表面上，其可以为LED、Mini-LED或Micro-LED中的一种。所述灯珠42通过所述导电层41与所述走线层20电连接，实现发光，为液晶显示装置提供光源。\n\n[0042]所述反光层50也设于所述绝缘层30远离所述走线层20的一表面上。如图3所示，所述反光层50环绕所述背光源40设置。所述反光层50为白色胶材，例如白色乳胶、白色硅胶、白色橡胶等。所述白色胶材相较于现有技术中所采用的白色油墨具有更好的反射性能，能够降低光线的损耗。所述反光层50具有一斜面，所述斜面朝向所述背光源40中的灯珠42。所述斜面与所述反光层50朝向所述走线层20的底面之间具有一夹角，所述夹角小于90°，从而调整光线在所述斜面上反射角度，提高斜面的反射效率。\n\n[0043]如图3所示，所述绝缘层30中设有通孔70和过孔60，所述通孔70和所述过孔60均贯穿所述绝缘层30至所述走线层20的表面上。所述通孔70与所述背光源40对应设置，所述背光源40位于所述通孔70远离所述走线层20的一端，所述导电层41通过所述通孔70与所述走线层20电连接。所述过孔60环绕所述背光源40设置，所述反光层50设于所述过孔60远离所述背光源40的一侧，并从所述绝缘层30上延伸至所述过孔60中，填充所述过孔60，覆盖所述过孔60中走线层20的裸露面。所述过孔60可以阻挡所述反光层50，防止所述反光层50溢出遮挡所述背光源40以及污染所述导电层41。同时，所述过孔60还可以遮挡过孔60中的走线层20，减少过孔60处的光线损失。\n\n[0044]本发明实施例中还提供一种背光模组1的制备方法，用以制备如上所述的背光模组1。所述背光模组1的制备流程如图4所示，其包括以下具体步骤：\n\n[0045]步骤S10)在一基板10上形成走线层20：准备一绝缘基板10，将所述绝缘基板10清洗干净后在其一表面上沉积一层金属材料，将该金属材料层图案化，形成所述走线层20。\n\n[0046]步骤S20)在所述走线层20上形成绝缘层30：在所述走线层20上覆盖一层绝缘材料，形成所述绝缘层30。\n\n[0047]步骤S30)在所述绝缘层30上形成背光源40：将所述绝缘层30图案化，形成如图5所示贯穿所述绝缘层30的通孔70将所述背光源40转移至所述基板10上并进行对位操作，将灯珠42下方的导电层41与所述绝缘层30中的通孔70对应设置，使所述导电层41穿过所述通孔70与所述走线层20焊接，形成如图6所示的结构。\n\n[0048]步骤S40)在所述绝缘层30上形成反光层50：通过激光再次将所述绝缘层30图案化，形成如图7所示环绕所述背光源40且贯穿所述绝缘层30的过孔60。在所述绝缘层30上和所述过孔60中通过点胶工艺涂覆一层白色胶材，并将所述白色胶材固化，形成如图3所示的反光层50。\n\n[0049]本发明实施例所提供的一种背光模组及其制备方法中，增设了一层绝缘层，并在所述绝缘层上开设了环绕背光源的过孔，通过将反光层填充所述过孔解决了现有技术中由于工艺精度而产生的开窗问题，从而减少背光模组中光线的损失，使背光模组能够以更低的功能达到更高的亮度。\n\n[0050]虽然在本文中参照了特定的实施方式来描述本发明，但是应该理解的是，这些实施例仅仅是本发明的原理和应用的示例。因此应该理解的是，可以对示例性的实施例进行许多修改，并且可以设计出其他的布置，只要不偏离所附权利要求所限定的本发明的精神和范围。应该理解的是，可以通过不同于原始权利要求所描述的方式来结合不同的从属权利要求和本文中所述的特征。还可以理解的是，结合单独实施例所描述的特征可以使用在其他所述实施例中。', '技术领域\n\n[0001]本发明涉及显示设备领域，特别是一种背光模组及其制备方法、显示装置。\n\n背景技术\n\n[0002]采用Mini-LED背光技术的LCD(液晶)显示屏，在亮度、对比度、色彩还原和节能远远优于当今的LCD显示器，甚至可以与AMOLED(有源矩阵有机发光二极管)竞争，同时还能控制生产成本。由于用于面板背光的LED数量大大增加，新技术可以在很大程度上改善LCD屏幕的HDR性能。\n\n[0003]提供光源的背光模组的单区结构如图1所示，该结构会在背光源40的四周印刷一层白色油墨80以减少光的损失，提升光效。但是由于印刷精度的问题，白色油墨80的覆盖位置与背光源40之间会有一定距离，从而产生开窗90，而背光源40所发出的部分光线会在开窗处从背光模组的底面射出，造成光线的损失。\n\n发明内容\n\n[0004]本发明的目的是提供一种背光模组及其制备方法、显示装置，以解决现有技术中由于工艺精度而产生的开窗问题以及开窗所带来的光损失问题。\n\n[0005]为实现上述目的，本发明提供一种背光模组，所述背光模组中包括走线层、绝缘层、背光源以及反光层。所述走线层设于一基板上。所述绝缘层设于所述走线层上。所述背光源设于所述绝缘层上，并与所述走线层电连接。所述反光层设于所述绝缘层上，并围绕所述背光源设置。\n\n[0006]进一步地，所述绝缘层中具有过孔，所述过孔环绕所述背光源设置，所述反光层进一步填充所述过孔。\n\n[0007]进一步地，所述反光层具有一斜面，所述斜面朝向所述背光源。所述斜面与所述反光层位于所述过孔内的底面之间具有一夹角，所述夹角的角度小于90度。\n\n[0008]进一步地，所述背光源包括导电层和灯珠。所述导电层设于所述绝缘层上，并穿过所述绝缘层与所述走线层电连接。所述灯珠设于所述导电层上。\n\n[0009]进一步地，所述灯珠为LED、Mini-LED或Micro-LED中的一种。\n\n[0010]进一步地，所述反光层中包含白色胶材。\n\n[0011]本发明中还提供一种背光模组的制备方法，所述制备方法中包括以下步骤：在一基板上形成走线层；在所述走线层上形成绝缘层；在所述绝缘层上形成背光源和围绕所述背光源的反光层。\n\n[0012]进一步地，在所述绝缘层上形成所述背光源步骤中包括：将所述绝缘层图案化，形成贯穿所述绝缘层的通孔；将所述背光源与所述通孔进行对位操作，使所述背光源穿过所述通孔与所述走线层连接。\n\n[0013]进一步地，在所述绝缘层上形成所述反光层步骤中包括：通过激光将所述绝缘层图案化，形成环绕所述背光源的过孔；在所述过孔远离所述背光源的一侧进行点胶操作，并使白色胶材填充所述过孔；固化所述白胶，形成所述反光层。\n\n[0014]本发明中还提供一种显示装置，所述显示装置中包括如上所述的背光模组。\n\n[0015]本发明的优点是：本发明中所提供的背光模组及其制备方法，通过反光层填充绝缘层中的过孔，从而减少由于开窗问题而造成的光线损失，使背光模组能够以更低的功能达到更高的亮度，进而提供显示装置的显示亮度。\n\n附图说明\n\n[0016]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0017]图1为现有技术中背光模组的层状结构示意图；\n\n[0018]图2为本发明实施例中背光模组的层状结构示意图；\n\n[0019]图3为本发明实施例中背光模组的局部放大示意图；\n\n[0020]图4为本发明实施例中背光模组制备方法的流程示意图；\n\n[0021]图5为本发明实施例中步骤S30中背光模组的层状结构示意图；\n\n[0022]图6为本发明实施例中步骤S30后背光模组的层状结构示意图；\n\n[0023]图7为本发明实施例中步骤S40中背光模组的层状结构示意图。\n\n[0024]图中部件表示如下：\n\n[0025]背光模组1；\n\n[0026]基板10； 走线层20；\n\n[0027]绝缘层30； 背光源40；\n\n[0028]导电层41； 灯珠42；\n\n[0029]反光层50； 过孔60；\n\n[0030]通孔70； 油墨80；\n\n[0031]开窗90。\n\n具体实施方式\n\n[0032]以下参考说明书附图介绍本发明的优选实施例，证明本发明可以实施，所述发明实施例可以向本领域中的技术人员完整介绍本发明，使其技术内容更加清楚和便于理解。本发明可以通过许多不同形式的发明实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例。\n\n[0033]在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。附图所示的每一部件的尺寸和厚度是任意示出的，本发明并没有限定每个组件的尺寸和厚度。为了使图示更清晰，附图中有些地方适当夸大了部件的厚度。\n\n[0034]此外，以下各发明实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定发明实施例。本发明中所提到的方向用语，例如，“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”、“侧面”等，仅是参考附加图式的方向，因此，使用的方向用语是为了更好、更清楚地说明及理解本发明，而不是指示或暗指所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。\n\n[0035]当某些部件被描述为“在”另一部件“上”时，所述部件可以直接置于所述另一部件上；也可以存在一中间部件，所述部件置于所述中间部件上，且所述中间部件置于另一部件上。当一个部件被描述为“安装至”或“连接至”另一部件时，二者可以理解为直接“安装”或“连接”，或者一个部件通过一中间部件间接“安装至”、或“连接至”另一个部件。\n\n[0036]本发明实施例中提供了一种显示装置，所述显示装置中包括一显示面板以及如上所述的背光模组1。所述背光模组1用于为所述显示面板提供显示光源，所述显示面板用于过滤光线以及控制光线的透过与否，从而形成显示画面。所述显示装置可以为任何具有显示功能的电子产品或部件，例如手机、笔记本电脑、平板电脑、电视机等。\n\n[0037]如图2所示，所述背光模组1包括一基板10、一走线层20、一绝缘层30、一反光层50以及若干背光源40。\n\n[0038]所述基板10为绝缘基板，其可以为玻璃基板、石英基板等。所述基板10用于为所述背光模组1提供刚性支撑。\n\n[0039]所述走线层20设于所述基板10的一表面上。所述走线层20中设有若干金属走线，其用于为所述背光源40传输电能。\n\n[0040]所述绝缘层30设置在所述走线层20远离所述基板10的一表面上，其用于绝缘保护所述走线层20中的走线。\n\n[0041]所述背光源40设于所述绝缘层30远离所述走线层20的一表面上，如图3所示，所述背光源40包括导电层41和灯珠42。所述导电层41设于所述绝缘层30上，其底端穿过所述绝缘层30与所述走线层20连接。所述灯珠42设于所述导电层41远离所述绝缘层30的一表面上，其可以为LED、Mini-LED或Micro-LED中的一种。所述灯珠42通过所述导电层41与所述走线层20电连接，实现发光，为液晶显示装置提供光源。\n\n[0042]所述反光层50也设于所述绝缘层30远离所述走线层20的一表面上。如图3所示，所述反光层50环绕所述背光源40设置。所述反光层50为白色胶材，例如白色乳胶、白色硅胶、白色橡胶等。所述白色胶材相较于现有技术中所采用的白色油墨具有更好的反射性能，能够降低光线的损耗。所述反光层50具有一斜面，所述斜面朝向所述背光源40中的灯珠42。所述斜面与所述反光层50朝向所述走线层20的底面之间具有一夹角，所述夹角小于90°，从而调整光线在所述斜面上反射角度，提高斜面的反射效率。\n\n[0043]如图3所示，所述绝缘层30中设有通孔70和过孔60，所述通孔70和所述过孔60均贯穿所述绝缘层30至所述走线层20的表面上。所述通孔70与所述背光源40对应设置，所述背光源40位于所述通孔70远离所述走线层20的一端，所述导电层41通过所述通孔70与所述走线层20电连接。所述过孔60环绕所述背光源40设置，所述反光层50设于所述过孔60远离所述背光源40的一侧，并从所述绝缘层30上延伸至所述过孔60中，填充所述过孔60，覆盖所述过孔60中走线层20的裸露面。所述过孔60可以阻挡所述反光层50，防止所述反光层50溢出遮挡所述背光源40以及污染所述导电层41。同时，所述过孔60还可以遮挡过孔60中的走线层20，减少过孔60处的光线损失。\n\n[0044]本发明实施例中还提供一种背光模组1的制备方法，用以制备如上所述的背光模组1。所述背光模组1的制备流程如图4所示，其包括以下具体步骤：\n\n[0045]步骤S10)在一基板10上形成走线层20：准备一绝缘基板10，将所述绝缘基板10清洗干净后在其一表面上沉积一层金属材料，将该金属材料层图案化，形成所述走线层20。\n\n[0046]步骤S20)在所述走线层20上形成绝缘层30：在所述走线层20上覆盖一层绝缘材料，形成所述绝缘层30。\n\n[0047]步骤S30)在所述绝缘层30上形成背光源40：将所述绝缘层30图案化，形成如图5所示贯穿所述绝缘层30的通孔70将所述背光源40转移至所述基板10上并进行对位操作，将灯珠42下方的导电层41与所述绝缘层30中的通孔70对应设置，使所述导电层41穿过所述通孔70与所述走线层20焊接，形成如图6所示的结构。\n\n[0048]步骤S40)在所述绝缘层30上形成反光层50：通过激光再次将所述绝缘层30图案化，形成如图7所示环绕所述背光源40且贯穿所述绝缘层30的过孔60。在所述绝缘层30上和所述过孔60中通过点胶工艺涂覆一层白色胶材，并将所述白色胶材固化，形成如图3所示的反光层50。\n\n[0049]本发明实施例所提供的一种背光模组及其制备方法中，增设了一层绝缘层，并在所述绝缘层上开设了环绕背光源的过孔，通过将反光层填充所述过孔解决了现有技术中由于工艺精度而产生的开窗问题，从而减少背光模组中光线的损失，使背光模组能够以更低的功能达到更高的亮度。\n\n[0050]虽然在本文中参照了特定的实施方式来描述本发明，但是应该理解的是，这些实施例仅仅是本发明的原理和应用的示例。因此应该理解的是，可以对示例性的实施例进行许多修改，并且可以设计出其他的布置，只要不偏离所附权利要求所限定的本发明的精神和范围。应该理解的是，可以通过不同于原始权利要求所描述的方式来结合不同的从属权利要求和本文中所述的特征。还可以理解的是，结合单独实施例所描述的特征可以使用在其他所述实施例中。');
INSERT INTO `os_patent_instruction_text` VALUES (10982, 24036, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种Micro LED器件及其制备方法。\n\n背景技术\n\n[0002]Micro LED(Micro Light Emitting Diode、微型发光二极管)，是指尺寸小于100μm的LED，由Micro-LED组成的高密度显示器件具有高亮度、高对比度和高分辨率等优点，已经成为显示领域的焦点之一。\n\n[0003]在目前常用的Micro LED器件中，Micro LED器件线路的制程一般先进行正面激光雕刻，以形成正面线路；然后再进行侧面激光雕刻，以形成侧面线路。具体的，在形成正面线路或者侧面线路的过程中，先在基板表面涂布银浆，再通过激光固化银浆，最后对固化的银浆进行激光雕刻，以形成正面线路或者侧面线路。\n\n[0004]因此，Micro LED器件需要经过两次的激光雕刻才能完成正面线路和侧面线路的制作。然而，由于激光雕刻的方式较复杂，以致于工艺时间(tact time)较长。\n\n发明内容\n\n[0005]本发明的目的在于，提供一种Micro LED器件及其制备方法，以解决现有MicroLED器件侧面线路激光雕刻的方式较复杂，导致工艺时间较长的技术问题。\n\n[0006]为实现上述目的，本发明提供一种Micro LED器件的制备方法，包括如下步骤：提供一压印模具，所述压印模具的一侧表面具有若干个阵列排布的第一凸部；涂布光阻溶液光于一基板的侧面，形成未固化的液态光阻层；将所述压印模具的第一凸部压合至所述液态光阻层上；对所述液态光阻层进行固化处理，形成固态光阻层；将所述压印模具从所述固态光阻层上移除，得到图案化的固态光阻层；其中，所述固态光阻层包括若干个阵列排布的第二凸部以及开口；形成金属层于所述第二凸部上表面及所述开口内；以及剥离所述第二凸部及设于所述第二凸部上表面的金属层，剩余的金属层为金属线路。\n\n[0007]进一步的，在紫外光的条件下，对所述液态光阻层进行固化处理60-100s，形成所述固态光阻层。\n\n[0008]进一步的，在所述将所述压印模具从所述光阻层上移除的步骤中，在同一水平方向上，将所述压印模具沿着所述基板的侧面从所述固态光阻层上移除，得到图案化的所述固态光阻层。\n\n[0009]进一步的，在所述形成金属层于所述第二凸部上表面及所述开口内的步骤中，采用物理气相沉积方法沉积金属材料于所述第二凸部上表面及所述开口内，形成所述金属层。\n\n[0010]进一步的，所述第一凸部为等腰梯形，且所述第一凸部的形状与所述开口的形状相匹配。\n\n[0011]进一步的，所述开口的顶部宽度小于所述开口的底部宽度。\n\n[0012]进一步的，所述开口的顶部宽度为30-50um，底部宽度为40-60um。\n\n[0013]进一步的，所述金属层的材质为钼、钛、铜以及银中的一种或者多种。\n\n[0014]进一步的，所述金属线路包括若干走线，所述走线的宽度为40-60um，厚度为\n\n[0015]为实现上述目的，本发明还提供一种Micro LED器件，包括：基板，其表面定义有一绑定区，该绑定区内设有若干间隔设置的端子；以及金属线路，形成于所述基板的侧面，所述金属线路包括若干走线，所述走线连接至所述端子。\n\n[0016]本发明的技术效果在于，提供一种Micro LED器件及其制备方法，采用压印的方式在基板的侧面形成金属线路，以免去了激光雕刻的复杂工艺，从而缩短工艺时间，以加快生产速度。\n\n附图说明\n\n[0017]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0018]图1为本申请实施例提供的Micro LED器件的制备方法的流程图；\n\n[0019]图2为本申请实施例提供的压印模具的结构示意图；\n\n[0020]图3为本申请实施例提供的液态光阻层形成于基板的侧面的立体图；\n\n[0021]图4为本申请实施例提供的液态光阻层形成于基板的侧面的侧视图；\n\n[0022]图5为本申请实施例提供的压印模具压印至液态光阻层的结构示意图；\n\n[0023]图6为本申请实施例提供的压印模具从固态光阻层上移除的结构示意图；\n\n[0024]图7为本申请实施例提供的形成金属层于第二凸部上表面及开口内的结构示意图；\n\n[0025]图8为本申请实施例提供的第二凸部被剥离后的结构示意图；\n\n[0026]图9为本申请实施例提供的金属线路形成于基板的侧面的结构示意图。\n\n[0027]附图部件标识如下：\n\n[0028]100、压印模具； 101、底板；\n\n[0029]102、第一凸部； 103、凹槽；\n\n[0030]201、基板； 201a、显示区；\n\n[0031]201b、绑定区； 202a、液态光阻层；\n\n[0032]202b、固态光阻层； 301、第二凸部；\n\n[0033]302、开口； 303a、金属层；\n\n[0034]303b、金属线路； 10、端子；\n\n[0035]20、走线。\n\n具体实施方式\n\n[0036]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。在本申请的描述中，需要理解的是，此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0037]如图1至图9所示，本实施例提供一种Micro LED器件的制备方法，包括如下步骤S1)-S7)。\n\n[0038]S1)提供一压印模具100，所述压印模具100的一侧表面具有若干个阵列排布的第一凸部102。\n\n[0039]如图2所示，压印模具100包括一底板101，该底板101的上表面上设有若干个阵列排布的第一凸部102。第一凸部102为等腰梯形，其下底(远离底板101端的顶部宽度的一侧)的长度为40-60um，上底(邻接底板101端的底部宽度的一侧)的长度为30-50um。其中，相邻的两个第一凸部102与底板101形成一凹槽103。\n\n[0040]S2)涂布光阻溶液光于一基板的侧面，形成未固化的液态光阻层202a。\n\n[0041]如图3和图4所示，基板201的表面定义有显示区201a和绑定区201b，该绑定区201b内设有若干间隔设置的端子10，该端子10与位于显示区201a内的信号走线同步形成，即该端子10的制备工艺与位于显示区201a内的信号走线的制备工艺例相同。端子10与位于显示区201a内的信号走线的制备方式可以为激光镭射、气相沉积等，在此不做特别的限定。\n\n[0042]本实施例中，在基板201靠近绑定区201b的一个侧面涂布光阻溶液，形成未固化的液态光阻层202a。\n\n[0043]S3)将所述压印模具的第一凸部102压合至所述液态光阻层202a上。\n\n[0044]如图5所示，垂直移动压印模具100，使得压印模具100的第一凸部102压合在液态光阻层202a上。\n\n[0045]S4)对所述液态光阻层202a进行固化处理，形成固态光阻层202b。\n\n[0046]具体的，在紫外光的条件下，对液态光阻层202a进行固化处理60-100s，形成固态光阻层202b。\n\n[0047]S5)将所述压印模具从所述固态光阻层202b上移除，得到图案化的固态光阻层202b；其中，所述固态光阻层202b包括若干个阵列排布的第二凸部301以及开口302。\n\n[0048]如图6所示，在同一水平方向上，将压印模具100沿着基板201的侧面从固态光阻层202b上移除，得到图案化的固态光阻层202b。第二凸部301的形状为等腰梯形，开口302的大小与第一凸部102的大小相同，以确保压印模具100的第一凸部102完全压印至液态光阻层202a，使得后续成型的固态光阻层202b也具有与第一凸部102的形状相同的图案(开口302)。本实施例中，开口302的顶部宽度小于开口302的底部宽度，开口302的顶部宽度为30-50um，底部宽度为40-60um，意即开口302具有过切(Undercut)结构。\n\n[0049]S6)形成金属层于所述第二凸部301上表面及所述开口302内。\n\n[0050]如图7所示，采用物理气相沉积方法沉积金属材料于第二凸部301上表面及开口302内，形成金属层303a。金属层303a的材质为钼、钛、铜以及银中的一种或者多种。在沉积的过程中，由于金属材料从开口302的顶部沉积至开口302的底部，即沉积至基板201的表面，因此后续位于开口302内的金属层303a的宽度为开口302的顶部宽度。\n\n[0051]S7)剥离所述第二凸部301及设于所述第二凸部301上表面的金属层，剩余的金属层为金属线路。\n\n[0052]如图8所示，由于位于开口302内的金属层303a的宽度为开口302的顶部宽度，故而在同一水平线上，金属层303a的一端与其相邻的第二凸部301侧边的间距为8-12um左右，优选为10um，这样可以保证设于第二凸部301上表面的金属层303a不会与位于开口302内的金属层303a连接在一起。因此，剥离第二凸部301的过程中，设于第二凸部301上表面的金属层303a连同第二凸部301一起剥离，位于开口302内的金属层303a不会因第二凸部301的剥离而剥离或者发生翘起的现象。本实施例中，剩余的金属层303a(即位于开口302内的金属层303a形成金属线路303b)设于基板201的侧面，该金属线路303b包括若干走线20，所述走线20的宽度为40-60um，所述走线20的厚度为(埃米)。\n\n[0053]如图9所示，金属线路303b的走线20连接至绑定区201b内的端子10，从而实现显示面板面内走线与面外走线的信号连接。\n\n[0054]本实施例提供一种Micro LED器件的制备方法，采用压印的方式在基板的侧面形成金属线路，以免去了Micro LED器件侧面的激光雕刻的复杂工艺，从而缩短工艺时间，以加快生产速度。\n\n[0055]结合图9所示，本实施例还提供一种Micro LED器件，其为根据前文所述的方法制备而成的Micro LED器件，具体包括基板201及金属线路303b。\n\n[0056]具体的，基板201的表面定义有一绑定区201b，该绑定区201b内设有若干间隔设置的端子10。金属线路303b形成于基板201的侧面，金属线路303b包括若干走线20，走线20连接至端子10。\n\n[0057]本实施例提供一种Micro LED器件及其制备方法，采用压印的方式在基板的侧面形成金属线路，以免去了激光雕刻的复杂工艺，从而缩短工艺时间，以加快生产速度。\n\n[0058]以上对本申请实施例所提供的一种Micro LED器件及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种Micro LED器件及其制备方法。\n\n背景技术\n\n[0002]Micro LED(Micro Light Emitting Diode、微型发光二极管)，是指尺寸小于100μm的LED，由Micro-LED组成的高密度显示器件具有高亮度、高对比度和高分辨率等优点，已经成为显示领域的焦点之一。\n\n[0003]在目前常用的Micro LED器件中，Micro LED器件线路的制程一般先进行正面激光雕刻，以形成正面线路；然后再进行侧面激光雕刻，以形成侧面线路。具体的，在形成正面线路或者侧面线路的过程中，先在基板表面涂布银浆，再通过激光固化银浆，最后对固化的银浆进行激光雕刻，以形成正面线路或者侧面线路。\n\n[0004]因此，Micro LED器件需要经过两次的激光雕刻才能完成正面线路和侧面线路的制作。然而，由于激光雕刻的方式较复杂，以致于工艺时间(tact time)较长。\n\n发明内容\n\n[0005]本发明的目的在于，提供一种Micro LED器件及其制备方法，以解决现有MicroLED器件侧面线路激光雕刻的方式较复杂，导致工艺时间较长的技术问题。\n\n[0006]为实现上述目的，本发明提供一种Micro LED器件的制备方法，包括如下步骤：提供一压印模具，所述压印模具的一侧表面具有若干个阵列排布的第一凸部；涂布光阻溶液光于一基板的侧面，形成未固化的液态光阻层；将所述压印模具的第一凸部压合至所述液态光阻层上；对所述液态光阻层进行固化处理，形成固态光阻层；将所述压印模具从所述固态光阻层上移除，得到图案化的固态光阻层；其中，所述固态光阻层包括若干个阵列排布的第二凸部以及开口；形成金属层于所述第二凸部上表面及所述开口内；以及剥离所述第二凸部及设于所述第二凸部上表面的金属层，剩余的金属层为金属线路。\n\n[0007]进一步的，在紫外光的条件下，对所述液态光阻层进行固化处理60-100s，形成所述固态光阻层。\n\n[0008]进一步的，在所述将所述压印模具从所述光阻层上移除的步骤中，在同一水平方向上，将所述压印模具沿着所述基板的侧面从所述固态光阻层上移除，得到图案化的所述固态光阻层。\n\n[0009]进一步的，在所述形成金属层于所述第二凸部上表面及所述开口内的步骤中，采用物理气相沉积方法沉积金属材料于所述第二凸部上表面及所述开口内，形成所述金属层。\n\n[0010]进一步的，所述第一凸部为等腰梯形，且所述第一凸部的形状与所述开口的形状相匹配。\n\n[0011]进一步的，所述开口的顶部宽度小于所述开口的底部宽度。\n\n[0012]进一步的，所述开口的顶部宽度为30-50um，底部宽度为40-60um。\n\n[0013]进一步的，所述金属层的材质为钼、钛、铜以及银中的一种或者多种。\n\n[0014]进一步的，所述金属线路包括若干走线，所述走线的宽度为40-60um，厚度为\n\n[0015]为实现上述目的，本发明还提供一种Micro LED器件，包括：基板，其表面定义有一绑定区，该绑定区内设有若干间隔设置的端子；以及金属线路，形成于所述基板的侧面，所述金属线路包括若干走线，所述走线连接至所述端子。\n\n[0016]本发明的技术效果在于，提供一种Micro LED器件及其制备方法，采用压印的方式在基板的侧面形成金属线路，以免去了激光雕刻的复杂工艺，从而缩短工艺时间，以加快生产速度。\n\n附图说明\n\n[0017]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0018]图1为本申请实施例提供的Micro LED器件的制备方法的流程图；\n\n[0019]图2为本申请实施例提供的压印模具的结构示意图；\n\n[0020]图3为本申请实施例提供的液态光阻层形成于基板的侧面的立体图；\n\n[0021]图4为本申请实施例提供的液态光阻层形成于基板的侧面的侧视图；\n\n[0022]图5为本申请实施例提供的压印模具压印至液态光阻层的结构示意图；\n\n[0023]图6为本申请实施例提供的压印模具从固态光阻层上移除的结构示意图；\n\n[0024]图7为本申请实施例提供的形成金属层于第二凸部上表面及开口内的结构示意图；\n\n[0025]图8为本申请实施例提供的第二凸部被剥离后的结构示意图；\n\n[0026]图9为本申请实施例提供的金属线路形成于基板的侧面的结构示意图。\n\n[0027]附图部件标识如下：\n\n[0028]100、压印模具； 101、底板；\n\n[0029]102、第一凸部； 103、凹槽；\n\n[0030]201、基板； 201a、显示区；\n\n[0031]201b、绑定区； 202a、液态光阻层；\n\n[0032]202b、固态光阻层； 301、第二凸部；\n\n[0033]302、开口； 303a、金属层；\n\n[0034]303b、金属线路； 10、端子；\n\n[0035]20、走线。\n\n具体实施方式\n\n[0036]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。在本申请的描述中，需要理解的是，此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0037]如图1至图9所示，本实施例提供一种Micro LED器件的制备方法，包括如下步骤S1)-S7)。\n\n[0038]S1)提供一压印模具100，所述压印模具100的一侧表面具有若干个阵列排布的第一凸部102。\n\n[0039]如图2所示，压印模具100包括一底板101，该底板101的上表面上设有若干个阵列排布的第一凸部102。第一凸部102为等腰梯形，其下底(远离底板101端的顶部宽度的一侧)的长度为40-60um，上底(邻接底板101端的底部宽度的一侧)的长度为30-50um。其中，相邻的两个第一凸部102与底板101形成一凹槽103。\n\n[0040]S2)涂布光阻溶液光于一基板的侧面，形成未固化的液态光阻层202a。\n\n[0041]如图3和图4所示，基板201的表面定义有显示区201a和绑定区201b，该绑定区201b内设有若干间隔设置的端子10，该端子10与位于显示区201a内的信号走线同步形成，即该端子10的制备工艺与位于显示区201a内的信号走线的制备工艺例相同。端子10与位于显示区201a内的信号走线的制备方式可以为激光镭射、气相沉积等，在此不做特别的限定。\n\n[0042]本实施例中，在基板201靠近绑定区201b的一个侧面涂布光阻溶液，形成未固化的液态光阻层202a。\n\n[0043]S3)将所述压印模具的第一凸部102压合至所述液态光阻层202a上。\n\n[0044]如图5所示，垂直移动压印模具100，使得压印模具100的第一凸部102压合在液态光阻层202a上。\n\n[0045]S4)对所述液态光阻层202a进行固化处理，形成固态光阻层202b。\n\n[0046]具体的，在紫外光的条件下，对液态光阻层202a进行固化处理60-100s，形成固态光阻层202b。\n\n[0047]S5)将所述压印模具从所述固态光阻层202b上移除，得到图案化的固态光阻层202b；其中，所述固态光阻层202b包括若干个阵列排布的第二凸部301以及开口302。\n\n[0048]如图6所示，在同一水平方向上，将压印模具100沿着基板201的侧面从固态光阻层202b上移除，得到图案化的固态光阻层202b。第二凸部301的形状为等腰梯形，开口302的大小与第一凸部102的大小相同，以确保压印模具100的第一凸部102完全压印至液态光阻层202a，使得后续成型的固态光阻层202b也具有与第一凸部102的形状相同的图案(开口302)。本实施例中，开口302的顶部宽度小于开口302的底部宽度，开口302的顶部宽度为30-50um，底部宽度为40-60um，意即开口302具有过切(Undercut)结构。\n\n[0049]S6)形成金属层于所述第二凸部301上表面及所述开口302内。\n\n[0050]如图7所示，采用物理气相沉积方法沉积金属材料于第二凸部301上表面及开口302内，形成金属层303a。金属层303a的材质为钼、钛、铜以及银中的一种或者多种。在沉积的过程中，由于金属材料从开口302的顶部沉积至开口302的底部，即沉积至基板201的表面，因此后续位于开口302内的金属层303a的宽度为开口302的顶部宽度。\n\n[0051]S7)剥离所述第二凸部301及设于所述第二凸部301上表面的金属层，剩余的金属层为金属线路。\n\n[0052]如图8所示，由于位于开口302内的金属层303a的宽度为开口302的顶部宽度，故而在同一水平线上，金属层303a的一端与其相邻的第二凸部301侧边的间距为8-12um左右，优选为10um，这样可以保证设于第二凸部301上表面的金属层303a不会与位于开口302内的金属层303a连接在一起。因此，剥离第二凸部301的过程中，设于第二凸部301上表面的金属层303a连同第二凸部301一起剥离，位于开口302内的金属层303a不会因第二凸部301的剥离而剥离或者发生翘起的现象。本实施例中，剩余的金属层303a(即位于开口302内的金属层303a形成金属线路303b)设于基板201的侧面，该金属线路303b包括若干走线20，所述走线20的宽度为40-60um，所述走线20的厚度为(埃米)。\n\n[0053]如图9所示，金属线路303b的走线20连接至绑定区201b内的端子10，从而实现显示面板面内走线与面外走线的信号连接。\n\n[0054]本实施例提供一种Micro LED器件的制备方法，采用压印的方式在基板的侧面形成金属线路，以免去了Micro LED器件侧面的激光雕刻的复杂工艺，从而缩短工艺时间，以加快生产速度。\n\n[0055]结合图9所示，本实施例还提供一种Micro LED器件，其为根据前文所述的方法制备而成的Micro LED器件，具体包括基板201及金属线路303b。\n\n[0056]具体的，基板201的表面定义有一绑定区201b，该绑定区201b内设有若干间隔设置的端子10。金属线路303b形成于基板201的侧面，金属线路303b包括若干走线20，走线20连接至端子10。\n\n[0057]本实施例提供一种Micro LED器件及其制备方法，采用压印的方式在基板的侧面形成金属线路，以免去了激光雕刻的复杂工艺，从而缩短工艺时间，以加快生产速度。\n\n[0058]以上对本申请实施例所提供的一种Micro LED器件及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10983, 24037, '技术领域\n\n[0001]本发明涉及显示装置制作技术领域，尤其涉及一种显示面板制作方法及显示装置。\n\n背景技术\n\n[0002]相较于传统方式当中的OLED和LCD显示技术，MiniLED或MicroLED显示技术具有更低的功耗、更快的响应时间以及更高的图像分辨率和色域。\n\n[0003]但受限于MiniLED或MicroLED显示面板的尺寸，目前大尺寸的MiniLED或MicroLED显示装置主要通过多个显示面板之间的拼接所构成。现有技术中，MiniLED或MicroLED显示面板主要通过封装胶和玻璃盖板来实现对发光器件的封装。其中，封装胶直接形成于背板之上，封装胶膜层厚度较难控制，这导致不同显示面板中封装胶的膜层厚度往往具有差异，同时，封装胶对盖板的支撑性不足，也会进一步扩大各显示面板的厚度差异，进而影响了拼接屏、显示装置的显示效果。\n\n发明内容\n\n[0004]本发明所要解决的技术问题是：提供一种显示面板制作方法、拼接屏制作方法及显示装置，其能够减少封装胶膜层的厚度误差。\n\n[0005]本发明为解决上述技术问题所采用的技术方案为：\n\n[0006]第一方面，本发明提供了一种显示面板制作方法，包括步骤：\n\n[0007]提供一背板，所述背板的一面上设置有发光器件；\n\n[0008]提供一与所述背板彼此相对的盖板，在所述背板、所述盖板之间设置支撑墙，以使所述支撑墙、所述背板和所述盖板围合出一收容所述发光器件的待灌注腔；\n\n[0009]对所述待灌注腔灌注封装胶并固化所述封装胶，以形成显示面板。\n\n[0010]在本申请部分实施例中，提供一与所述背板彼此相对的盖板，在所述背板、所述盖板之间设置支撑墙，以使所述支撑墙、所述背板和所述盖板围合出一收容所述发光器件的待灌注腔，包括：\n\n[0011]提供一盖板，在所述盖板的一面设置支撑墙；\n\n[0012]使所述盖板设有所述支撑墙的一面和所述背板设有所述发光器件的一面彼此相对；\n\n[0013]使所述支撑墙与所述背板设有所述发光器件的一面接触，让所述盖板和所述背板在所述支撑墙的支撑下保持预设间距，以使所述支撑墙、所述背板和所述盖板围合出一收容所述发光器件的待灌注腔。\n\n[0014]在本申请部分实施例中，所述背板的一面上具有显示区域和环绕所述显示区域的非显示区域，所述发光器件设置于所述显示区域上；\n\n[0015]其中，所述使所述支撑墙与所述背板设有所述发光器件的一面接触，包括：\n\n[0016]使所述支撑墙与所述背板设有所述发光器件的一面接触，并且使所述支撑墙在所述背板上的投影由所述非显示区域所覆盖。\n\n[0017]在本申请部分实施例中，所述支撑墙包括基底和填充于所述基底中的填充物。\n\n[0018]在本申请部分实施例中，所述填充物质地的硬度被配置成大于所述基底质地的硬度。\n\n[0019]在本申请部分实施例中，所述填充物为球体，所述填充物的球径为所述预设间距的0.4至0.6倍。\n\n[0020]在本申请部分实施例中，所述基底的材质为环氧树脂或甲基丙烯酸甲酯或硅胶，所述填充物的材质为SiO2或氧化铝。\n\n[0021]在本申请部分实施例中，所述支撑墙在垂直于所述盖板方向上的截面呈由靠近所述盖板一侧至远离所述盖板一侧宽度逐渐减小的形状。\n\n[0022]在本申请部分实施例中，所述提供一背板，所述背板的一面上设置有发光器件，包括：\n\n[0023]提供一基板，所述基板具有第一面；\n\n[0024]在第一面上设置薄膜晶体管层，以形成背板；\n\n[0025]在所述薄膜晶体管层背向所述第一面的一面上设置发光器件。\n\n[0026]在本申请部分实施例中，所述发光器件为MiniLED芯片或MicroLED芯片。\n\n[0027]第二方面，本申请还提供了一种拼接屏制作方法，包括第一方面所述显示面板制作方法，还包括步骤：\n\n[0028]在形成所述显示面板后，将所述支撑墙去除，以形成无边框显示面板；\n\n[0029]将多个所述无边框显示面板拼接，以形成拼接屏。\n\n[0030]第三方面，本申请还提供了一种显示装置，所述显示装置采用如第一方面所述显示面板制作方法制作而成，或者采用如第二方面所述拼接屏制作方法制作而成。\n\n[0031]综上所述，由于采用了上述技术方案，本发明的有益效果包括：\n\n[0032]本发明公开了一种显示面板制作方法、拼接屏制作方法及显示装置，涉及显示装置制作技术领域，本发明所提供的显示面板制作方法、拼接屏制作方法及显示装置，主要对背板、盖板之间的封装工序作出改进，在本发明所提供的实施例中，背板和盖板在进行封装时，于两者之间设置支撑墙，使得支撑墙配合背板、盖板一并围合出收容发光器件的待灌注腔，再进行封装胶灌注。其中，由于背板和盖板之间受到了支撑墙的支撑作用，所以固化后形成于待灌注腔当中的封装胶能够维持在一个较为稳定的膜层厚度，减少了显示面板当中封装胶膜层厚度误差，进而减少了不同待拼接显示面板中封装胶膜层厚度差异，提升了封装胶膜层厚度的均一性。\n\n附图说明\n\n[0033]为了更清楚地说明本申请实施例或现有技术中的技术方案，下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本申请的部分实施例，对于本领域普通技术人员而言，在不付出创造性劳动的前提下，还可以根据这些附图获取其他的附图。\n\n[0034]图1为本发明所提供实施例1所提供一种显示面板制作方法的流程示意图；\n\n[0035]图2为本发明所提供实施例1中步骤S2的示意图；\n\n[0036]图3为本发明所提供实施例1中步骤S3的示意图；\n\n[0037]图4、图5为本发明所提供实施例2中步骤S201的示意图；\n\n[0038]图6为本发明所提供实施例2中步骤S203的示意图；\n\n[0039]图7为本发明所提供实施例2中步骤S101的示意图；\n\n[0040]图8为本发明所提供实施例2中步骤S102的示意图；\n\n[0041]图9为本发明所提供实施例2中步骤S103的示意图；\n\n[0042]图10为本发明所提供实施例3中步骤S4的示意图；\n\n[0043]图11为本发明所提供实施例3中步骤S5的示意图。\n\n具体实施方式\n\n[0044]下面将结合本申请实施例中附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。通常在此处附图中描述和示出的本申请实施例的组件可以以各种不同的配置来布置和设计。因此，以下对在附图中提供的本申请的实施例的详细描述并非旨在限制要求保护的本申请的范围，而是仅仅表示本申请的选定实施例。基于本申请的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0045]应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。同时，在本申请的描述中，术语“第一”、“第二”等仅用于区分描述，而不能理解为指示或暗示相对重要性。\n\n[0046]实施例1提供了一种显示面板制作方法，请参见图1，本实施例所提供显示面板制作方法的流程示意图，在本实施例中，显示面板的制作方法包括步骤：\n\n[0047]S1、提供一背板1，背板1的一面上设置有发光器件2。\n\n[0048]S2、提供一与背板1彼此相对的盖板3，在背板1、盖板3之间设置支撑墙4，以使支撑墙4、背板1和盖板3围合出一收容发光器件2的待灌注腔5。\n\n[0049]S3、对待灌注腔5灌注封装胶6并固化封装胶6，以形成显示面板。\n\n[0050]请结合图2和图3，在本实施例所提供的显示面板制作方法，主要在步骤S2当中，在彼此相对设置的背板1和盖板3之间设置支撑墙4，支撑墙4利用自身支撑性分别支撑背板1、盖板3的同时，还配合背板1、盖板3一并围合出一个收容住发光器件2的待灌注腔5，之后，在对待灌注腔5内灌注以封装胶6，使封装胶6进行固化，覆盖住发光器件2，进而完成对显示面板的封装工序。\n\n[0051]本实施例所提供的显示面板制作方法，主要通过设置具有一定支撑性能的支撑墙4来实现显示面板的封装，支撑墙4自身的支撑性能够有效保障背板1、盖板3之间的间距处于预期范围之内，保障了最终所成型的显示面板中封装胶6的膜层厚度的误差范围，进而减少了不同待拼接显示面板中封装胶膜层厚度差异，提升了封装胶膜层厚度的均一性，最终改善了由各显示面板拼接而成的显示面板显示效果。\n\n[0052]需要说明的是，前文中所提供的显示面板制作方法可以适用于减少显示面板中封装胶6膜层厚度的误差范围，所以其能够提升拼接屏各待拼接的显示面板中封装胶6膜层厚度均一性。可以理解的是，上述显示面板制作方法并不限定于制作待拼接的显示面板，其还可以用于制作独立的显示面板。\n\n[0053]本具体实施方式还提供了实施例2，实施例2与实施例1的主要区别在于，实施例2细化了步骤S2。\n\n[0054]请结合图4、图5和图6，在实施例2中，步骤S2、提供一与背板1彼此相对的盖板3，在背板1、盖板3之间设置支撑墙4，以使支撑墙4、背板1和盖板3围合出一收容发光器件2的待灌注腔5，包括：\n\n[0055]S201、提供一盖板3，在盖板3的一面设置支撑墙4；\n\n[0056]S202、使盖板3设有支撑墙4的一面和背板1设有发光器件2的一面彼此相对；\n\n[0057]S203、使支撑墙4与背板1设有发光器件2的一面接触，让盖板3和背板1在支撑墙4的支撑下保持预设间距，以使支撑墙4、背板1和盖板3围合出一收容发光器件2的待灌注腔5。\n\n[0058]其中，关于步骤S201，在另一些实施例中，支撑墙4首先形成于背板1之上，然后在通过背板1、盖板3之间相对方位的变化，而使得支撑墙4与盖板3相接触。\n\n[0059]而在本实施例中，支撑墙4于步骤S201直接形成于盖板3之上，采用如此设置，能够使得盖板3上设置支撑墙4的工序和制造背板1的工序一并进行，进而加快生产效率。\n\n[0060]其中，关于步骤S202，在本实施例中，背板1在设置发光器件2之后进行了翻转，以使得其设置有发光器件2的一面朝向于处于下方的盖板3，在步骤S202中，实施人员还可以将背板1设置在下方，而将盖板3设置在上方，本公开对此不做特别限定。\n\n[0061]关于步骤S203，其中，预设间距即指支撑墙4在分别与背板1、盖板3相接触后，所能够使背板1、盖板3保持的稳定间距。预设间距与支撑墙4在分别与背板1、盖板3相接触后，支撑墙4在背板1至盖板3方向上的尺寸相一致，预设间距也与封装胶6最终固化成型后膜层厚度相一致。\n\n[0062]需要说明的是，背板1具有显示区域和环绕显示区域的非显示区域，发光器件2设置于显示区域当中，用于作为显示部件。在上述步骤当中，支撑墙4与背板1之间的接触部位可以位于显示区域当中，只要确保支撑墙4能够收容发光器件2即可。而在本实施例中，支撑墙4在背板1上投影由非显示区域所覆盖，以避免支撑墙4与背板1的显示区域接触，尽量扩大封装胶6的灌注范围，并避免对显示面板的显示造成影响。\n\n[0063]可以理解的是，上述支撑墙4呈现为具有内孔的形状，支撑墙4的内孔壁即围合出待灌注腔5的一部分。其中，支撑墙4的具体形状可以依据显示面板的显示区域变化而对应设置。例如，在本实施例中，显示面板的显示区域为矩形形状，而支撑墙4则对应呈具有方型内孔的方框形状。在另一实施例中，显示面板的显示区域为圆形形状，而支撑墙4则对应呈具有内孔的环形形状。\n\n[0064]除此之外，针对于支撑墙4，支撑墙4自身的支撑性能决定了背板1、盖板3之间封装胶6的膜层厚度，支撑墙4可以如实施例1中所展示的，仅采用树脂制成。但单独采用树脂作为支撑墙4，支撑墙4的支撑性能有限，较难保障背板1、盖板3能够稳定地保持在预设间距。所以为了提升支撑墙4自身的支撑性能，在本实施例中，支撑墙4包括基底和填充于基底中的填充物，其中，填充物能够填补基底中由工艺、自身结构所带来的空隙，进而有效改善支撑墙4的支撑性能，使得背板1、盖板3能够稳定地保持在预设间距，进而进一步保障背板1、盖板3之间所形成的封装胶6膜层厚度。\n\n[0065]此外，实施人员还可以如本实施例中所占展示的，将填充物质地的硬度配置成大于基底质地的硬度，以进一步提升支撑墙4的支撑效果。在本实施例中，基底采用环氧树脂制作而成，填充物采用SiO2制作而成，实施人员可以依据自身需求而具体选用基底与填充物的制成材料，例如，在另一实施例中，基底采用甲基丙烯酸甲酯制成，填充物则为氧化铝颗粒。实施人员还可以选用硅胶等材质来构建基底，并采用其他金属颗粒或非金属颗粒来作为填充物。\n\n[0066]另外，上述填充物可以是不规则颗粒、正方颗粒、多面体颗粒等形状。而在本实施例中，为进一步地提升填充物对于基底的支撑效果，填充物为球体，填充物的球径为预设间距的0.4至0.6倍，优选为预设间距的一半。\n\n[0067]需要说明的是，实施人员可以依据自身需求对应选择支撑墙4的形状。例如，当在盖板3上设置支撑墙4之后，支撑墙4在垂直于盖板3方向上的截面可以是矩形、圆形、三角形、梯形、T字型中的任意一种或者若干种的组合。\n\n[0068]而在本实施例中，请参见图5，当在盖板3的一面设置支撑墙4后，支撑墙4在垂直于盖板3方向上的截面呈由靠近盖板3一侧至远离盖板3一侧呈宽度逐渐减小的形状，可以理解的是，采用如此截面的支撑墙4，相较于圆形等截面形状的支撑墙4，其支撑性能更为优秀。在本实施例中，上述截面具体呈梯形，梯形的较长边与盖板3相连，而其较短边则背向于盖板3。此外可以理解的是，上述宽度即指支撑墙4在平行于盖板3方向上的尺寸。\n\n[0069]请结合图7、图8和图9，实施人员可以对步骤S1进行进一步细化，例如，在本实施例中，步骤S1提供一背板1，背板1的一面上设置有发光器件2，包括：\n\n[0070]S101、提供一基板11，基板11具有第一面11a；\n\n[0071]S102、在第一面11a上设置薄膜晶体管层12，以形成背板1；\n\n[0072]S103、在薄膜晶体管层12背向第一面11a的一面上设置发光器件2。\n\n[0073]上述发光器件2可以是MiniLED芯片或MicroLED芯片，本实施例以MicroLED芯片为例，但并不应当理解为对发光器件2的限制。现有技术当中已经公开了一些在薄膜晶体管层12上巨量转移MiniLED芯片或MicroLED芯片的技术手段，所以在此不再累述。此外，MiniLED芯片在背板1至盖板3方向上的尺寸，即其厚度可以选择在100±15um，MicroLED芯片在背板1至盖板3方向上的尺寸，即其厚度可以选择在8±3um，为保障支撑墙4的支撑效果，支撑墙4的高度，即在支撑墙4支撑下，背板1和盖板3所能够保持的预设间距可以是MiniLED芯片或MicroLED芯片厚度的1.5至2倍。另外，在本实施例中，上述薄膜晶体管层12优选为顶栅结构，但其还可以是底栅结构等任意结构，而薄膜晶体管层12中的有源层可以IGZO、IGTO、IGZTO等高迁移率金属氧化物半导体，实施人员可以依据自身需求而对应选择。\n\n[0074]关于步骤S3，在本实施例中，当待灌注腔5灌注封装胶6后，需要对封装胶6进行固化作用，以完成显示面板的封装工序。在本实施例中，封装胶6采用UV光固化，实施人员还可以采用热固化或者UV光固化结合热固化的工艺，本公开对此不做特别限定。\n\n[0075]需要指出的是，封装胶6可以选用为硅胶或环氧胶，其透光率应当大于95％，黏度小于1000cp，以保障显示面板的显示效果以及封装效果。\n\n[0076]本具体实施方式还提供了一种拼接屏制作方法作为实施例3。\n\n[0077]请结合图10和图11，本实施例所提供一种拼接屏制作方法，包括如实施例1所述的显示面板制作方法，其还包括步骤：\n\n[0078]S4、在形成显示面板后，将支撑墙4去除，以形成无边框显示面板7；\n\n[0079]S5、将多个无边框显示面板7拼接，以形成拼接屏。\n\n[0080]本实施例所提供的拼接屏制作方法，主要在形成显示面板之后，对支撑墙4进行清除和处理，从而获得无边框的显示面板。在获得多个无边框显示面板7之后，即可将多个无边框显示面板7平置并且对齐拼接，从而获得拼接屏。\n\n[0081]其中，关于支撑墙4的去除工艺，实施人员可以采用切割的方式，使得支撑墙4与固化后的封装胶6之间相分离，实施人员还可以依据支撑墙4的具体材质而选用其他去除工艺，本公开对此不做特别限定。\n\n[0082]另外，本实施例所提供的拼接屏制作方法并不限定于本实施例中所展示的将两块无边框显示面板7进行拼装，其还可以用于多块无边框显示面板7之间的拼接，例如3块、4块等等多块无边框显示面板7之间的拼接。现有技术当中已经公开了一些关于无边框显示面板7之间的拼接方法，本实施例不再对无边框显示面板7之间的拼接方法进行累述，实施人员可以依据自身需求而对应选择。\n\n[0083]本具体实施方式还提供了一种显示装置，其中，显示装置采用如实施例1或实施例2所提供的显示面板制作方法制作而成，或者采用实施例3所提供的拼接屏制作方法制作而成。其中，显示设备包括但不限定于手机、平板电脑、计算机显示器、游戏机、电视机、可穿戴设备及其他具有显示功能的生活电器或家用电器等。\n\n[0084]本发明所提供的一种显示面板制作方法、拼接屏制作方法及显示装置，主要通过设置支撑墙4分别支撑背板1和盖板3，并对支撑墙4的支撑性能作出了优化改进，保障了封装时，封装胶6的膜层厚度处于预期范围内，进而提升了各待拼接显示面板中封装胶6的膜层厚度均一性，保障了拼接屏、显示装置的显示效果。\n\n[0085]以上对本发明所提供的显示面板及其制备方法进行了详细介绍。应理解，本文的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。在每个示例性实施方式中对特征或方面的描述通常应被视作适用于其他示例性实施例中的类似特征或方面。尽管参考示例性实施例描述了本发明，但可建议所属领域的技术人员进行各种变化和更改。本发明意图涵盖所附权利要求书的范围内的这些变化和更改，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。', '技术领域\n\n[0001]本发明涉及显示装置制作技术领域，尤其涉及一种显示面板制作方法及显示装置。\n\n背景技术\n\n[0002]相较于传统方式当中的OLED和LCD显示技术，MiniLED或MicroLED显示技术具有更低的功耗、更快的响应时间以及更高的图像分辨率和色域。\n\n[0003]但受限于MiniLED或MicroLED显示面板的尺寸，目前大尺寸的MiniLED或MicroLED显示装置主要通过多个显示面板之间的拼接所构成。现有技术中，MiniLED或MicroLED显示面板主要通过封装胶和玻璃盖板来实现对发光器件的封装。其中，封装胶直接形成于背板之上，封装胶膜层厚度较难控制，这导致不同显示面板中封装胶的膜层厚度往往具有差异，同时，封装胶对盖板的支撑性不足，也会进一步扩大各显示面板的厚度差异，进而影响了拼接屏、显示装置的显示效果。\n\n发明内容\n\n[0004]本发明所要解决的技术问题是：提供一种显示面板制作方法、拼接屏制作方法及显示装置，其能够减少封装胶膜层的厚度误差。\n\n[0005]本发明为解决上述技术问题所采用的技术方案为：\n\n[0006]第一方面，本发明提供了一种显示面板制作方法，包括步骤：\n\n[0007]提供一背板，所述背板的一面上设置有发光器件；\n\n[0008]提供一与所述背板彼此相对的盖板，在所述背板、所述盖板之间设置支撑墙，以使所述支撑墙、所述背板和所述盖板围合出一收容所述发光器件的待灌注腔；\n\n[0009]对所述待灌注腔灌注封装胶并固化所述封装胶，以形成显示面板。\n\n[0010]在本申请部分实施例中，提供一与所述背板彼此相对的盖板，在所述背板、所述盖板之间设置支撑墙，以使所述支撑墙、所述背板和所述盖板围合出一收容所述发光器件的待灌注腔，包括：\n\n[0011]提供一盖板，在所述盖板的一面设置支撑墙；\n\n[0012]使所述盖板设有所述支撑墙的一面和所述背板设有所述发光器件的一面彼此相对；\n\n[0013]使所述支撑墙与所述背板设有所述发光器件的一面接触，让所述盖板和所述背板在所述支撑墙的支撑下保持预设间距，以使所述支撑墙、所述背板和所述盖板围合出一收容所述发光器件的待灌注腔。\n\n[0014]在本申请部分实施例中，所述背板的一面上具有显示区域和环绕所述显示区域的非显示区域，所述发光器件设置于所述显示区域上；\n\n[0015]其中，所述使所述支撑墙与所述背板设有所述发光器件的一面接触，包括：\n\n[0016]使所述支撑墙与所述背板设有所述发光器件的一面接触，并且使所述支撑墙在所述背板上的投影由所述非显示区域所覆盖。\n\n[0017]在本申请部分实施例中，所述支撑墙包括基底和填充于所述基底中的填充物。\n\n[0018]在本申请部分实施例中，所述填充物质地的硬度被配置成大于所述基底质地的硬度。\n\n[0019]在本申请部分实施例中，所述填充物为球体，所述填充物的球径为所述预设间距的0.4至0.6倍。\n\n[0020]在本申请部分实施例中，所述基底的材质为环氧树脂或甲基丙烯酸甲酯或硅胶，所述填充物的材质为SiO2或氧化铝。\n\n[0021]在本申请部分实施例中，所述支撑墙在垂直于所述盖板方向上的截面呈由靠近所述盖板一侧至远离所述盖板一侧宽度逐渐减小的形状。\n\n[0022]在本申请部分实施例中，所述提供一背板，所述背板的一面上设置有发光器件，包括：\n\n[0023]提供一基板，所述基板具有第一面；\n\n[0024]在第一面上设置薄膜晶体管层，以形成背板；\n\n[0025]在所述薄膜晶体管层背向所述第一面的一面上设置发光器件。\n\n[0026]在本申请部分实施例中，所述发光器件为MiniLED芯片或MicroLED芯片。\n\n[0027]第二方面，本申请还提供了一种拼接屏制作方法，包括第一方面所述显示面板制作方法，还包括步骤：\n\n[0028]在形成所述显示面板后，将所述支撑墙去除，以形成无边框显示面板；\n\n[0029]将多个所述无边框显示面板拼接，以形成拼接屏。\n\n[0030]第三方面，本申请还提供了一种显示装置，所述显示装置采用如第一方面所述显示面板制作方法制作而成，或者采用如第二方面所述拼接屏制作方法制作而成。\n\n[0031]综上所述，由于采用了上述技术方案，本发明的有益效果包括：\n\n[0032]本发明公开了一种显示面板制作方法、拼接屏制作方法及显示装置，涉及显示装置制作技术领域，本发明所提供的显示面板制作方法、拼接屏制作方法及显示装置，主要对背板、盖板之间的封装工序作出改进，在本发明所提供的实施例中，背板和盖板在进行封装时，于两者之间设置支撑墙，使得支撑墙配合背板、盖板一并围合出收容发光器件的待灌注腔，再进行封装胶灌注。其中，由于背板和盖板之间受到了支撑墙的支撑作用，所以固化后形成于待灌注腔当中的封装胶能够维持在一个较为稳定的膜层厚度，减少了显示面板当中封装胶膜层厚度误差，进而减少了不同待拼接显示面板中封装胶膜层厚度差异，提升了封装胶膜层厚度的均一性。\n\n附图说明\n\n[0033]为了更清楚地说明本申请实施例或现有技术中的技术方案，下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本申请的部分实施例，对于本领域普通技术人员而言，在不付出创造性劳动的前提下，还可以根据这些附图获取其他的附图。\n\n[0034]图1为本发明所提供实施例1所提供一种显示面板制作方法的流程示意图；\n\n[0035]图2为本发明所提供实施例1中步骤S2的示意图；\n\n[0036]图3为本发明所提供实施例1中步骤S3的示意图；\n\n[0037]图4、图5为本发明所提供实施例2中步骤S201的示意图；\n\n[0038]图6为本发明所提供实施例2中步骤S203的示意图；\n\n[0039]图7为本发明所提供实施例2中步骤S101的示意图；\n\n[0040]图8为本发明所提供实施例2中步骤S102的示意图；\n\n[0041]图9为本发明所提供实施例2中步骤S103的示意图；\n\n[0042]图10为本发明所提供实施例3中步骤S4的示意图；\n\n[0043]图11为本发明所提供实施例3中步骤S5的示意图。\n\n具体实施方式\n\n[0044]下面将结合本申请实施例中附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。通常在此处附图中描述和示出的本申请实施例的组件可以以各种不同的配置来布置和设计。因此，以下对在附图中提供的本申请的实施例的详细描述并非旨在限制要求保护的本申请的范围，而是仅仅表示本申请的选定实施例。基于本申请的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0045]应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。同时，在本申请的描述中，术语“第一”、“第二”等仅用于区分描述，而不能理解为指示或暗示相对重要性。\n\n[0046]实施例1提供了一种显示面板制作方法，请参见图1，本实施例所提供显示面板制作方法的流程示意图，在本实施例中，显示面板的制作方法包括步骤：\n\n[0047]S1、提供一背板1，背板1的一面上设置有发光器件2。\n\n[0048]S2、提供一与背板1彼此相对的盖板3，在背板1、盖板3之间设置支撑墙4，以使支撑墙4、背板1和盖板3围合出一收容发光器件2的待灌注腔5。\n\n[0049]S3、对待灌注腔5灌注封装胶6并固化封装胶6，以形成显示面板。\n\n[0050]请结合图2和图3，在本实施例所提供的显示面板制作方法，主要在步骤S2当中，在彼此相对设置的背板1和盖板3之间设置支撑墙4，支撑墙4利用自身支撑性分别支撑背板1、盖板3的同时，还配合背板1、盖板3一并围合出一个收容住发光器件2的待灌注腔5，之后，在对待灌注腔5内灌注以封装胶6，使封装胶6进行固化，覆盖住发光器件2，进而完成对显示面板的封装工序。\n\n[0051]本实施例所提供的显示面板制作方法，主要通过设置具有一定支撑性能的支撑墙4来实现显示面板的封装，支撑墙4自身的支撑性能够有效保障背板1、盖板3之间的间距处于预期范围之内，保障了最终所成型的显示面板中封装胶6的膜层厚度的误差范围，进而减少了不同待拼接显示面板中封装胶膜层厚度差异，提升了封装胶膜层厚度的均一性，最终改善了由各显示面板拼接而成的显示面板显示效果。\n\n[0052]需要说明的是，前文中所提供的显示面板制作方法可以适用于减少显示面板中封装胶6膜层厚度的误差范围，所以其能够提升拼接屏各待拼接的显示面板中封装胶6膜层厚度均一性。可以理解的是，上述显示面板制作方法并不限定于制作待拼接的显示面板，其还可以用于制作独立的显示面板。\n\n[0053]本具体实施方式还提供了实施例2，实施例2与实施例1的主要区别在于，实施例2细化了步骤S2。\n\n[0054]请结合图4、图5和图6，在实施例2中，步骤S2、提供一与背板1彼此相对的盖板3，在背板1、盖板3之间设置支撑墙4，以使支撑墙4、背板1和盖板3围合出一收容发光器件2的待灌注腔5，包括：\n\n[0055]S201、提供一盖板3，在盖板3的一面设置支撑墙4；\n\n[0056]S202、使盖板3设有支撑墙4的一面和背板1设有发光器件2的一面彼此相对；\n\n[0057]S203、使支撑墙4与背板1设有发光器件2的一面接触，让盖板3和背板1在支撑墙4的支撑下保持预设间距，以使支撑墙4、背板1和盖板3围合出一收容发光器件2的待灌注腔5。\n\n[0058]其中，关于步骤S201，在另一些实施例中，支撑墙4首先形成于背板1之上，然后在通过背板1、盖板3之间相对方位的变化，而使得支撑墙4与盖板3相接触。\n\n[0059]而在本实施例中，支撑墙4于步骤S201直接形成于盖板3之上，采用如此设置，能够使得盖板3上设置支撑墙4的工序和制造背板1的工序一并进行，进而加快生产效率。\n\n[0060]其中，关于步骤S202，在本实施例中，背板1在设置发光器件2之后进行了翻转，以使得其设置有发光器件2的一面朝向于处于下方的盖板3，在步骤S202中，实施人员还可以将背板1设置在下方，而将盖板3设置在上方，本公开对此不做特别限定。\n\n[0061]关于步骤S203，其中，预设间距即指支撑墙4在分别与背板1、盖板3相接触后，所能够使背板1、盖板3保持的稳定间距。预设间距与支撑墙4在分别与背板1、盖板3相接触后，支撑墙4在背板1至盖板3方向上的尺寸相一致，预设间距也与封装胶6最终固化成型后膜层厚度相一致。\n\n[0062]需要说明的是，背板1具有显示区域和环绕显示区域的非显示区域，发光器件2设置于显示区域当中，用于作为显示部件。在上述步骤当中，支撑墙4与背板1之间的接触部位可以位于显示区域当中，只要确保支撑墙4能够收容发光器件2即可。而在本实施例中，支撑墙4在背板1上投影由非显示区域所覆盖，以避免支撑墙4与背板1的显示区域接触，尽量扩大封装胶6的灌注范围，并避免对显示面板的显示造成影响。\n\n[0063]可以理解的是，上述支撑墙4呈现为具有内孔的形状，支撑墙4的内孔壁即围合出待灌注腔5的一部分。其中，支撑墙4的具体形状可以依据显示面板的显示区域变化而对应设置。例如，在本实施例中，显示面板的显示区域为矩形形状，而支撑墙4则对应呈具有方型内孔的方框形状。在另一实施例中，显示面板的显示区域为圆形形状，而支撑墙4则对应呈具有内孔的环形形状。\n\n[0064]除此之外，针对于支撑墙4，支撑墙4自身的支撑性能决定了背板1、盖板3之间封装胶6的膜层厚度，支撑墙4可以如实施例1中所展示的，仅采用树脂制成。但单独采用树脂作为支撑墙4，支撑墙4的支撑性能有限，较难保障背板1、盖板3能够稳定地保持在预设间距。所以为了提升支撑墙4自身的支撑性能，在本实施例中，支撑墙4包括基底和填充于基底中的填充物，其中，填充物能够填补基底中由工艺、自身结构所带来的空隙，进而有效改善支撑墙4的支撑性能，使得背板1、盖板3能够稳定地保持在预设间距，进而进一步保障背板1、盖板3之间所形成的封装胶6膜层厚度。\n\n[0065]此外，实施人员还可以如本实施例中所占展示的，将填充物质地的硬度配置成大于基底质地的硬度，以进一步提升支撑墙4的支撑效果。在本实施例中，基底采用环氧树脂制作而成，填充物采用SiO2制作而成，实施人员可以依据自身需求而具体选用基底与填充物的制成材料，例如，在另一实施例中，基底采用甲基丙烯酸甲酯制成，填充物则为氧化铝颗粒。实施人员还可以选用硅胶等材质来构建基底，并采用其他金属颗粒或非金属颗粒来作为填充物。\n\n[0066]另外，上述填充物可以是不规则颗粒、正方颗粒、多面体颗粒等形状。而在本实施例中，为进一步地提升填充物对于基底的支撑效果，填充物为球体，填充物的球径为预设间距的0.4至0.6倍，优选为预设间距的一半。\n\n[0067]需要说明的是，实施人员可以依据自身需求对应选择支撑墙4的形状。例如，当在盖板3上设置支撑墙4之后，支撑墙4在垂直于盖板3方向上的截面可以是矩形、圆形、三角形、梯形、T字型中的任意一种或者若干种的组合。\n\n[0068]而在本实施例中，请参见图5，当在盖板3的一面设置支撑墙4后，支撑墙4在垂直于盖板3方向上的截面呈由靠近盖板3一侧至远离盖板3一侧呈宽度逐渐减小的形状，可以理解的是，采用如此截面的支撑墙4，相较于圆形等截面形状的支撑墙4，其支撑性能更为优秀。在本实施例中，上述截面具体呈梯形，梯形的较长边与盖板3相连，而其较短边则背向于盖板3。此外可以理解的是，上述宽度即指支撑墙4在平行于盖板3方向上的尺寸。\n\n[0069]请结合图7、图8和图9，实施人员可以对步骤S1进行进一步细化，例如，在本实施例中，步骤S1提供一背板1，背板1的一面上设置有发光器件2，包括：\n\n[0070]S101、提供一基板11，基板11具有第一面11a；\n\n[0071]S102、在第一面11a上设置薄膜晶体管层12，以形成背板1；\n\n[0072]S103、在薄膜晶体管层12背向第一面11a的一面上设置发光器件2。\n\n[0073]上述发光器件2可以是MiniLED芯片或MicroLED芯片，本实施例以MicroLED芯片为例，但并不应当理解为对发光器件2的限制。现有技术当中已经公开了一些在薄膜晶体管层12上巨量转移MiniLED芯片或MicroLED芯片的技术手段，所以在此不再累述。此外，MiniLED芯片在背板1至盖板3方向上的尺寸，即其厚度可以选择在100±15um，MicroLED芯片在背板1至盖板3方向上的尺寸，即其厚度可以选择在8±3um，为保障支撑墙4的支撑效果，支撑墙4的高度，即在支撑墙4支撑下，背板1和盖板3所能够保持的预设间距可以是MiniLED芯片或MicroLED芯片厚度的1.5至2倍。另外，在本实施例中，上述薄膜晶体管层12优选为顶栅结构，但其还可以是底栅结构等任意结构，而薄膜晶体管层12中的有源层可以IGZO、IGTO、IGZTO等高迁移率金属氧化物半导体，实施人员可以依据自身需求而对应选择。\n\n[0074]关于步骤S3，在本实施例中，当待灌注腔5灌注封装胶6后，需要对封装胶6进行固化作用，以完成显示面板的封装工序。在本实施例中，封装胶6采用UV光固化，实施人员还可以采用热固化或者UV光固化结合热固化的工艺，本公开对此不做特别限定。\n\n[0075]需要指出的是，封装胶6可以选用为硅胶或环氧胶，其透光率应当大于95％，黏度小于1000cp，以保障显示面板的显示效果以及封装效果。\n\n[0076]本具体实施方式还提供了一种拼接屏制作方法作为实施例3。\n\n[0077]请结合图10和图11，本实施例所提供一种拼接屏制作方法，包括如实施例1所述的显示面板制作方法，其还包括步骤：\n\n[0078]S4、在形成显示面板后，将支撑墙4去除，以形成无边框显示面板7；\n\n[0079]S5、将多个无边框显示面板7拼接，以形成拼接屏。\n\n[0080]本实施例所提供的拼接屏制作方法，主要在形成显示面板之后，对支撑墙4进行清除和处理，从而获得无边框的显示面板。在获得多个无边框显示面板7之后，即可将多个无边框显示面板7平置并且对齐拼接，从而获得拼接屏。\n\n[0081]其中，关于支撑墙4的去除工艺，实施人员可以采用切割的方式，使得支撑墙4与固化后的封装胶6之间相分离，实施人员还可以依据支撑墙4的具体材质而选用其他去除工艺，本公开对此不做特别限定。\n\n[0082]另外，本实施例所提供的拼接屏制作方法并不限定于本实施例中所展示的将两块无边框显示面板7进行拼装，其还可以用于多块无边框显示面板7之间的拼接，例如3块、4块等等多块无边框显示面板7之间的拼接。现有技术当中已经公开了一些关于无边框显示面板7之间的拼接方法，本实施例不再对无边框显示面板7之间的拼接方法进行累述，实施人员可以依据自身需求而对应选择。\n\n[0083]本具体实施方式还提供了一种显示装置，其中，显示装置采用如实施例1或实施例2所提供的显示面板制作方法制作而成，或者采用实施例3所提供的拼接屏制作方法制作而成。其中，显示设备包括但不限定于手机、平板电脑、计算机显示器、游戏机、电视机、可穿戴设备及其他具有显示功能的生活电器或家用电器等。\n\n[0084]本发明所提供的一种显示面板制作方法、拼接屏制作方法及显示装置，主要通过设置支撑墙4分别支撑背板1和盖板3，并对支撑墙4的支撑性能作出了优化改进，保障了封装时，封装胶6的膜层厚度处于预期范围内，进而提升了各待拼接显示面板中封装胶6的膜层厚度均一性，保障了拼接屏、显示装置的显示效果。\n\n[0085]以上对本发明所提供的显示面板及其制备方法进行了详细介绍。应理解，本文的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。在每个示例性实施方式中对特征或方面的描述通常应被视作适用于其他示例性实施例中的类似特征或方面。尽管参考示例性实施例描述了本发明，但可建议所属领域的技术人员进行各种变化和更改。本发明意图涵盖所附权利要求书的范围内的这些变化和更改，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。');
INSERT INTO `os_patent_instruction_text` VALUES (10984, 24038, '技术领域\n\n[0001]本申请涉及显示技术领域，特别是涉及一种拼接显示面板、所述拼接显示面板中的所述拼接单元的制备方法以及包括所述拼接显示面板的拼接显示装置。\n\n背景技术\n\n[0002]近年来LED(light-emitting diode，发光二极管)显示发展迅速，随着像素尺寸不断减小，应用场景也变得广泛。从原来的室内外大型远距离广告屏逐渐发展到室内外近距离高清显示屏，LED显示将是未来室内外大屏幕高清显示的主流。\n\n[0003]目前，大屏幕LED显示主要采用模块拼接技术，即将小尺寸的LED模块拼接成任意尺寸的大屏。但由于目前拼缝处是直线型拼接，且拼缝处会有拼缝处理或者本身结构与显示中心区域有区别，这样就会在拼缝处出现显示异常；再者，如果按照常规的COF(Chip OnFilm，覆晶薄膜)邦定方法拼接时，就需要将COF夹在拼缝中间，对COF进行大角度的弯折，容易造成COF破裂而导致良率下降，并且无法实现真正的无缝拼接。\n\n[0004]因此，针对现有技术中存在的缺陷，急需进行改进。\n\n发明内容\n\n[0005]本申请的目的在于提供一种拼接显示面板、拼接单元的制备方法以及拼接显示装置，以解决现有技术中在拼缝处容易产生显示异常的问题，实现无缝拼接的同时，改善了拼缝处的光学均一性。\n\n[0006]本申请实施例提供一种拼接显示面板，所述拼接显示面板包括至少两个拼接单元，所述拼接单元包括：一衬底基板，所述衬底基板上设置有多个贯穿所述衬底基板的走线孔；驱动线路，设置于所述衬底基板上；多个LED芯片，设置于所述衬底基板设置有所述驱动线路的一侧，并与所述驱动线路导通；覆晶薄膜，设置于所述衬底基板背向所述LED芯片的一侧，通过所述走线孔与所述驱动线路电连接；其中，相邻两个所述拼接单元拼接时所形成的拼缝为非直线型。\n\n[0007]可选地，在本申请的一些实施例中，所述拼接单元包括显示区以及与所述显示区相邻的拼接显示区；所述衬底基板上的所述走线孔对应设置于所述显示区内；所述拼接显示区背向所述显示区的一侧边上设置有拼接凸起部和/或拼接凹陷部。\n\n[0008]可选地，在本申请的一些实施例中，所述拼接单元包括第一拼接单元与第二拼接单元；当所述第一拼接单元与所述第二拼接单元拼接时，所述第一拼接单元的所述拼接凸起部与所述第二拼接单元的所述拼接凹陷部相互拼合。\n\n[0009]可选地，在本申请的一些实施例中，当所述拼接凸起部为三角形时，所述拼接凹陷部为与所述拼接凸起部匹配的三角形；或者，当所述拼接凸起部为矩形时，所述拼接凹陷部为与所述拼接凸起部匹配的矩形；或者，当所述拼接凸起部为梯形时，所述拼接凹陷部为与所述拼接凸起部匹配的梯形；或者，当所述拼接凸起部为弧形时，所述拼接凹陷部为与所述拼接凸起部匹配的弧形。\n\n[0010]可选地，在本申请的一些实施例中，所述衬底基板包括印制电路板、玻璃基板或聚酰亚胺基板中的一种。\n\n[0011]可选地，在本申请的一些实施例中，每一所述拼接单元还包括一封装层，覆盖所述LED芯片与所述衬底基板。\n\n[0012]可选地，在本申请的一些实施例中，每一所述拼接单元还包括一遮光矩阵，设置于所述衬底基板上，覆盖所述驱动线路并暴露出所述LED芯片。\n\n[0013]可选地，在本申请的一些实施例中，所述LED芯片为Mini LED芯片。\n\n[0014]相应地，在本申请实施例还提供一种上述任一项所述的拼接单元的制备方法，包括如下步骤：提供一衬底基板，并在所述衬底基板的一侧边上形成有拼接凸起部和/或拼接凹陷部；在所述衬底基板上进行打孔，形成多个走线孔；在所述衬底基板的一侧制备驱动线路，并将所述驱动线路通过所述走线孔贯穿至所述衬底基板的另一侧；在所述衬底基板制备有所述驱动线路的一侧装配LED芯片，并将所述LED芯片与所述驱动线路导通；在所述衬底基板背向所述LED芯片的一侧绑定覆晶薄膜，以与所述驱动线路电连接。\n\n[0015]相应地，在本申请实施例还提供一种拼接显示装置，包括上述任一项所述的拼接显示面板，所述拼接显示装置还包括：至少两个拼装机构，每一所述拼装机构对应于所述拼接单元设置，以将所述拼接单元固定于一框架上。\n\n[0016]综上，本申请实施例提供一种拼接显示面板，所述拼接显示面板包括至少两个拼接单元，分别为第一拼接单元与第二拼接单元；当所述第一拼接单元与所述第二拼接单元拼接时，所述第一拼接单元的所述拼接凸起部与所述第二拼接单元的所述拼接凹陷部相互拼合，此时，相邻两个所述拼接单元拼接时所形成的拼缝为非直线型，一方面可以弱化由于直线型拼缝所造成的显示不良的问题，另一方面能够使相邻两个所述拼接单元拼接后不会发生相对位移，也不会产生摩擦，避免了所述衬底基板产生损伤。并且通过在所述衬底基板上设置有多个贯穿所述衬底基板的走线孔，能够将所述衬底基板背向所述LED芯片一侧的所述覆晶薄膜与所述驱动线路导通，进而导通所述LED芯片。这样设置能够完美地将所述覆晶薄膜隐藏于所述衬底基板下方，实现拼接单元之间的无缝拼接。\n\n[0017]进一步地，由于所述衬底基板上的所述驱动线路会反射环境光影响环境对比度，每一所述拼接单元还包括一遮光矩阵，设置于所述衬底基板上，覆盖所述驱动线路并暴露出所述LED芯片，所述遮光矩阵能够有效地遮挡所述衬底基板上的所述驱动线路，同时露出所述LED芯片，在不影响所述拼接显示面板的出光效果的前提下，提升所述拼接显示面板的对比度，进而提升显示效果。所述封装层的设置能够为所述LED芯片提供保护，防止所述LED芯片由于外界环境的干扰，所造成的失效问题。\n\n附图说明\n\n[0018]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1是本申请实施例中所述拼接显示面板的一种结构示意图；\n\n[0020]图2是本申请实施例中所述拼接显示面板的一种平面结构示意图；\n\n[0021]图3是本申请实施例中所述拼接显示面板的另一种平面结构示意图；\n\n[0022]图4是本申请实施例中所述拼接显示面板的另一种平面结构示意图；\n\n[0023]图5是本申请实施例中所述拼接单元的制备流程示意图；\n\n[0024]图6是本申请实施例中所述拼接显示装置的一种平面结构示意图。\n\n[0025]主要附图标记说明：\n\n[0026]\n\n具体实施方式\n\n[0027]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”、“下”、“左”和“右”可以是装置实际使用或工作状态的方向，也可以是参考附图中的图面方向，还可以是指相对的两个方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0028]具体地，请参阅图1与图2，本申请实施例提供一种拼接显示面板10，所述拼接显示面板10包括至少两个拼接单元100，所述拼接单元100包括：一衬底基板110，所述衬底基板110上设置有多个贯穿所述衬底基板110的走线孔111；驱动线路120，设置于所述衬底基板110上；多个LED芯片130，设置于所述衬底基板110设置有所述驱动线路120的一侧，并与所述驱动线路120导通；覆晶薄膜140，设置于所述衬底基板110背向所述LED芯片130的一侧，通过所述走线孔111与所述驱动线路120电连接；其中，相邻两个所述拼接单元100拼接时所形成的拼缝为非直线型。\n\n[0029]本申请通过在所述衬底基板110上设置有多个贯穿所述衬底基板110的走线孔111，能够将所述衬底基板110背向所述LED芯片130一侧的所述覆晶薄膜140与所述驱动线路120导通，进而导通所述LED芯片130。这样设置能够完美地将所述覆晶薄膜140隐藏于所述衬底基板110下方，实现拼接单元100之间的无缝拼接。进一步地，相邻两个所述拼接单元100拼接时所形成的拼缝为非直线型，一方面可以弱化由于直线型拼缝所造成的显示不良的问题，另一方面能够使相邻两个所述拼接单元100拼接后不会发生相对位移，也不会产生摩擦，避免了所述衬底基板110产生损伤。\n\n[0030]在本申请一实施例中，所述衬底基板110包括印制电路板、玻璃基板或聚酰亚胺基板中的一种。当所述衬底基板110为印制电路板时，所述印制电路板为灯驱合一印制电路板，其结构更为简单；当所述衬底基板110采用玻璃基板时，由于玻璃基板具有较高的平坦性，在玻璃基板上制作驱动线路时，能够实现主动式的驱动方案，从而减小了驱动线路整体的体积，更好的降低了驱动线路的功耗；而且，采用玻璃基板能够使所述拼接显示面板10具有更好的耐水性和抗氧化性，从而更有利于提升所述拼接显示面板10的使用寿命和信赖性；当所述衬底基板110采用聚酰亚胺基板时，由于所述聚酰亚胺为柔性材料，能够为大尺寸拼接显示提供可弯折性，进一步提升显示效果。在一实施例中，由于所述拼接单元100的无缝拼接，还可以对所述衬底基板110的边缘进行相应的强化处理或软化处理，防止相邻两衬底基板110在无缝拼接时，由于干涉所造成的衬底基板110破裂现象。\n\n[0031]在本申请一实施例中，所述LED芯片130固定于所述衬底基板110上，且所述LED芯片130为三基色LED芯片，包括：红色LED芯片131、绿色LED芯片132以及蓝色LED芯片133。所述LED芯片130优选为Mini LED(亚毫米发光二极管)芯片，Mini LED灯的尺寸规格在微米级，能够提供更高的分辨率，进而提升显示效果。\n\n[0032]本申请中，所述拼接单元100包括显示区11以及与所述显示区11相邻的拼接显示区12；所述衬底基板110上的所述走线孔111对应设置于所述显示区11内；所述拼接显示区12背向所述显示区11的一侧边上设置有拼接凸起部112和/或拼接凹陷部113。\n\n[0033]请参阅图2至图4，在一实施例中，所述拼接单元100包括第一拼接单元101与第二拼接单元102；当所述第一拼接单元101与所述第二拼接单元102拼接时，所述第一拼接单元101的所述拼接凸起部112与所述第二拼接单元102的所述拼接凹陷部113相互拼合。可以理解的是，所述第一拼接单元101的所述拼接凸起部112与所述第二拼接单元102的所述拼接凹陷部113是相互匹配的，能够完美配合，从而不产生缝隙。\n\n[0034]本实施例中，如图2所示，当所述拼接凸起部112为三角形时，所述拼接凹陷部113为与所述拼接凸起部112匹配的三角形；或者，如图3所示，当所述拼接凸起部112为矩形时，所述拼接凹陷部113为与所述拼接凸起部112匹配的矩形；或者，如图4所示，当所述拼接凸起部112为梯形时，所述拼接凹陷部113为与所述拼接凸起部112匹配的梯形；或者，当所述拼接凸起部112为弧形时，所述拼接凹陷部113为与所述拼接凸起部112匹配的弧形。本申请中的所述拼接凸起部112与所述拼接凹陷部113的形状并不仅限于图2至图4所示，还可以是其他形状，本申请不再赘述。\n\n[0035]在一实施例中，由于所述衬底基板110上的所述驱动线路120会反射环境光影响环境对比度，每一所述拼接单元100还包括一遮光矩阵150，设置于所述衬底基板110上，覆盖所述驱动线路120并暴露出所述LED芯片130。所述遮光矩阵150能够有效地遮挡所述衬底基板110上的所述驱动线路120，同时露出所述LED芯片130，在不影响所述拼接显示面板10的出光效果的前提下，提升所述拼接显示面板10的对比度，进而提升显示效果。\n\n[0036]在一实施例中，每一所述拼接单元100还包括：一封装层160，覆盖所述LED芯片130与所述衬底基板110。所述封装层160的材料包括：环氧树脂或光学胶。所述封装层160的设置能够为所述LED芯片130提供保护，防止所述LED芯片130由于外界环境的干扰所造成的失效问题，例如：水蒸气、氧气等。\n\n[0037]相应地，请结合参阅图1与图5，本申请实施例还提供一种上述任一实施例中所述的拼接单元100的制备方法，包括如下步骤：\n\n[0038]步骤S1：提供一衬底基板110，并在所述衬底基板110的一侧边上形成有拼接凸起部112和/或拼接凹陷部113；\n\n[0039]步骤S2：在所述衬底基板110上进行打孔，形成多个走线孔111；\n\n[0040]步骤S3：在所述衬底基板110的一侧制备驱动线路120，并将所述驱动线路120通过所述走线孔111贯穿至所述衬底基板110的另一侧；\n\n[0041]步骤S4：在所述衬底基板110制备有所述驱动线路120的一侧装配LED芯片130，并将所述LED芯片130与所述驱动线路120导通；\n\n[0042]步骤S5：在所述衬底基板110背向所述LED芯片130的一侧绑定覆晶薄膜140，以与所述驱动线路120电连接。\n\n[0043]在一实施例中，所述拼接单元100的制备方法，还包括如下步骤：\n\n[0044]步骤S41，在所述衬底基板110装配有所述LED芯片130的一侧形成一遮光矩阵150；述遮光矩阵150能够有效地遮挡所述衬底基板110上的所述驱动线路120，同时露出所述LED芯片130，在不影响所述拼接显示面板10的出光效果的前提下，提升所述拼接显示面板10的对比度，进而提升显示效果。\n\n[0045]在一实施例中，所述拼接单元100的制备方法，还包括如下步骤：\n\n[0046]步骤S42，在所述衬底基板110装配有所述LED芯片130的一侧沉积一封装层160，以覆盖所述LED芯片130与所述衬底基板110；从而为所述LED芯片130提供保护，防止所述LED芯片130由于外界环境的干扰所造成的失效问题。\n\n[0047]可以理解的是，所述拼接显示面板10是通过将多个上述制备的所述拼接单元100拼接而形成的。\n\n[0048]相应地，请参阅图6，本申请实施例还提供一种拼接显示装置1包括上述任一实施例中所述的拼接显示面板10，所述拼接显示装置1还包括：至少两个拼装机构20，每一所述拼装机构20对应于所述拼接单元100设置，以将所述拼接单元100固定于一框架上，从而实现多个所述拼接显示面板10之间的稳固连接，以将多个小尺寸的所述拼接显示面板10集成为一个整体的大尺寸显示面板，且由于各个小尺寸的所述拼接显示面板10之间的无缝拼接，能够使集成后的大尺寸显示面板的显示效果更佳，提升了产品的市场竞争力。\n\n[0049]综上，本申请实施例提供一种拼接显示面板10，所述拼接显示面板10包括至少两个拼接单元100，分别为第一拼接单元101与第二拼接单元102；当所述第一拼接单元101与所述第二拼接单元102拼接时，所述第一拼接单元101的所述拼接凸起部112与所述第二拼接单元102的所述拼接凹陷部113相互拼合，此时，相邻两个所述拼接单元100拼接时所形成的拼缝为非直线型，一方面可以弱化由于直线型拼缝所造成的显示不良的问题，另一方面能够使相邻两个所述拼接单元100拼接后不会发生相对位移，也不会产生摩擦，避免了所述衬底基板110产生损伤。并且通过在所述衬底基板110上设置有多个贯穿所述衬底基板110的走线孔111，能够将所述衬底基板110背向所述LED芯片130一侧的所述覆晶薄膜140与所述驱动线路120导通，进而导通所述LED芯片130。这样设置能够完美地将所述覆晶薄膜140隐藏于所述衬底基板110下方，实现拼接单元100之间的无缝拼接。\n\n[0050]进一步地，由于所述衬底基板110上的所述驱动线路120会反射环境光影响环境对比度，每一所述拼接单元100还包括一遮光矩阵150，设置于所述衬底基板110上，覆盖所述驱动线路120并暴露出所述LED芯片130，所述遮光矩阵150能够有效地遮挡所述衬底基板110上的所述驱动线路120，同时露出所述LED芯片130，在不影响所述拼接显示面板10的出光效果的前提下，提升所述拼接显示面板10的对比度，进而提升显示效果。所述封装层160的设置能够为所述LED芯片130提供保护，防止所述LED芯片130由于外界环境的干扰，所造成的失效问题。\n\n[0051]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0052]以上对本申请实施例所提供的技术方案进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，特别是涉及一种拼接显示面板、所述拼接显示面板中的所述拼接单元的制备方法以及包括所述拼接显示面板的拼接显示装置。\n\n背景技术\n\n[0002]近年来LED(light-emitting diode，发光二极管)显示发展迅速，随着像素尺寸不断减小，应用场景也变得广泛。从原来的室内外大型远距离广告屏逐渐发展到室内外近距离高清显示屏，LED显示将是未来室内外大屏幕高清显示的主流。\n\n[0003]目前，大屏幕LED显示主要采用模块拼接技术，即将小尺寸的LED模块拼接成任意尺寸的大屏。但由于目前拼缝处是直线型拼接，且拼缝处会有拼缝处理或者本身结构与显示中心区域有区别，这样就会在拼缝处出现显示异常；再者，如果按照常规的COF(Chip OnFilm，覆晶薄膜)邦定方法拼接时，就需要将COF夹在拼缝中间，对COF进行大角度的弯折，容易造成COF破裂而导致良率下降，并且无法实现真正的无缝拼接。\n\n[0004]因此，针对现有技术中存在的缺陷，急需进行改进。\n\n发明内容\n\n[0005]本申请的目的在于提供一种拼接显示面板、拼接单元的制备方法以及拼接显示装置，以解决现有技术中在拼缝处容易产生显示异常的问题，实现无缝拼接的同时，改善了拼缝处的光学均一性。\n\n[0006]本申请实施例提供一种拼接显示面板，所述拼接显示面板包括至少两个拼接单元，所述拼接单元包括：一衬底基板，所述衬底基板上设置有多个贯穿所述衬底基板的走线孔；驱动线路，设置于所述衬底基板上；多个LED芯片，设置于所述衬底基板设置有所述驱动线路的一侧，并与所述驱动线路导通；覆晶薄膜，设置于所述衬底基板背向所述LED芯片的一侧，通过所述走线孔与所述驱动线路电连接；其中，相邻两个所述拼接单元拼接时所形成的拼缝为非直线型。\n\n[0007]可选地，在本申请的一些实施例中，所述拼接单元包括显示区以及与所述显示区相邻的拼接显示区；所述衬底基板上的所述走线孔对应设置于所述显示区内；所述拼接显示区背向所述显示区的一侧边上设置有拼接凸起部和/或拼接凹陷部。\n\n[0008]可选地，在本申请的一些实施例中，所述拼接单元包括第一拼接单元与第二拼接单元；当所述第一拼接单元与所述第二拼接单元拼接时，所述第一拼接单元的所述拼接凸起部与所述第二拼接单元的所述拼接凹陷部相互拼合。\n\n[0009]可选地，在本申请的一些实施例中，当所述拼接凸起部为三角形时，所述拼接凹陷部为与所述拼接凸起部匹配的三角形；或者，当所述拼接凸起部为矩形时，所述拼接凹陷部为与所述拼接凸起部匹配的矩形；或者，当所述拼接凸起部为梯形时，所述拼接凹陷部为与所述拼接凸起部匹配的梯形；或者，当所述拼接凸起部为弧形时，所述拼接凹陷部为与所述拼接凸起部匹配的弧形。\n\n[0010]可选地，在本申请的一些实施例中，所述衬底基板包括印制电路板、玻璃基板或聚酰亚胺基板中的一种。\n\n[0011]可选地，在本申请的一些实施例中，每一所述拼接单元还包括一封装层，覆盖所述LED芯片与所述衬底基板。\n\n[0012]可选地，在本申请的一些实施例中，每一所述拼接单元还包括一遮光矩阵，设置于所述衬底基板上，覆盖所述驱动线路并暴露出所述LED芯片。\n\n[0013]可选地，在本申请的一些实施例中，所述LED芯片为Mini LED芯片。\n\n[0014]相应地，在本申请实施例还提供一种上述任一项所述的拼接单元的制备方法，包括如下步骤：提供一衬底基板，并在所述衬底基板的一侧边上形成有拼接凸起部和/或拼接凹陷部；在所述衬底基板上进行打孔，形成多个走线孔；在所述衬底基板的一侧制备驱动线路，并将所述驱动线路通过所述走线孔贯穿至所述衬底基板的另一侧；在所述衬底基板制备有所述驱动线路的一侧装配LED芯片，并将所述LED芯片与所述驱动线路导通；在所述衬底基板背向所述LED芯片的一侧绑定覆晶薄膜，以与所述驱动线路电连接。\n\n[0015]相应地，在本申请实施例还提供一种拼接显示装置，包括上述任一项所述的拼接显示面板，所述拼接显示装置还包括：至少两个拼装机构，每一所述拼装机构对应于所述拼接单元设置，以将所述拼接单元固定于一框架上。\n\n[0016]综上，本申请实施例提供一种拼接显示面板，所述拼接显示面板包括至少两个拼接单元，分别为第一拼接单元与第二拼接单元；当所述第一拼接单元与所述第二拼接单元拼接时，所述第一拼接单元的所述拼接凸起部与所述第二拼接单元的所述拼接凹陷部相互拼合，此时，相邻两个所述拼接单元拼接时所形成的拼缝为非直线型，一方面可以弱化由于直线型拼缝所造成的显示不良的问题，另一方面能够使相邻两个所述拼接单元拼接后不会发生相对位移，也不会产生摩擦，避免了所述衬底基板产生损伤。并且通过在所述衬底基板上设置有多个贯穿所述衬底基板的走线孔，能够将所述衬底基板背向所述LED芯片一侧的所述覆晶薄膜与所述驱动线路导通，进而导通所述LED芯片。这样设置能够完美地将所述覆晶薄膜隐藏于所述衬底基板下方，实现拼接单元之间的无缝拼接。\n\n[0017]进一步地，由于所述衬底基板上的所述驱动线路会反射环境光影响环境对比度，每一所述拼接单元还包括一遮光矩阵，设置于所述衬底基板上，覆盖所述驱动线路并暴露出所述LED芯片，所述遮光矩阵能够有效地遮挡所述衬底基板上的所述驱动线路，同时露出所述LED芯片，在不影响所述拼接显示面板的出光效果的前提下，提升所述拼接显示面板的对比度，进而提升显示效果。所述封装层的设置能够为所述LED芯片提供保护，防止所述LED芯片由于外界环境的干扰，所造成的失效问题。\n\n附图说明\n\n[0018]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1是本申请实施例中所述拼接显示面板的一种结构示意图；\n\n[0020]图2是本申请实施例中所述拼接显示面板的一种平面结构示意图；\n\n[0021]图3是本申请实施例中所述拼接显示面板的另一种平面结构示意图；\n\n[0022]图4是本申请实施例中所述拼接显示面板的另一种平面结构示意图；\n\n[0023]图5是本申请实施例中所述拼接单元的制备流程示意图；\n\n[0024]图6是本申请实施例中所述拼接显示装置的一种平面结构示意图。\n\n[0025]主要附图标记说明：\n\n[0026]\n\n具体实施方式\n\n[0027]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”、“下”、“左”和“右”可以是装置实际使用或工作状态的方向，也可以是参考附图中的图面方向，还可以是指相对的两个方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0028]具体地，请参阅图1与图2，本申请实施例提供一种拼接显示面板10，所述拼接显示面板10包括至少两个拼接单元100，所述拼接单元100包括：一衬底基板110，所述衬底基板110上设置有多个贯穿所述衬底基板110的走线孔111；驱动线路120，设置于所述衬底基板110上；多个LED芯片130，设置于所述衬底基板110设置有所述驱动线路120的一侧，并与所述驱动线路120导通；覆晶薄膜140，设置于所述衬底基板110背向所述LED芯片130的一侧，通过所述走线孔111与所述驱动线路120电连接；其中，相邻两个所述拼接单元100拼接时所形成的拼缝为非直线型。\n\n[0029]本申请通过在所述衬底基板110上设置有多个贯穿所述衬底基板110的走线孔111，能够将所述衬底基板110背向所述LED芯片130一侧的所述覆晶薄膜140与所述驱动线路120导通，进而导通所述LED芯片130。这样设置能够完美地将所述覆晶薄膜140隐藏于所述衬底基板110下方，实现拼接单元100之间的无缝拼接。进一步地，相邻两个所述拼接单元100拼接时所形成的拼缝为非直线型，一方面可以弱化由于直线型拼缝所造成的显示不良的问题，另一方面能够使相邻两个所述拼接单元100拼接后不会发生相对位移，也不会产生摩擦，避免了所述衬底基板110产生损伤。\n\n[0030]在本申请一实施例中，所述衬底基板110包括印制电路板、玻璃基板或聚酰亚胺基板中的一种。当所述衬底基板110为印制电路板时，所述印制电路板为灯驱合一印制电路板，其结构更为简单；当所述衬底基板110采用玻璃基板时，由于玻璃基板具有较高的平坦性，在玻璃基板上制作驱动线路时，能够实现主动式的驱动方案，从而减小了驱动线路整体的体积，更好的降低了驱动线路的功耗；而且，采用玻璃基板能够使所述拼接显示面板10具有更好的耐水性和抗氧化性，从而更有利于提升所述拼接显示面板10的使用寿命和信赖性；当所述衬底基板110采用聚酰亚胺基板时，由于所述聚酰亚胺为柔性材料，能够为大尺寸拼接显示提供可弯折性，进一步提升显示效果。在一实施例中，由于所述拼接单元100的无缝拼接，还可以对所述衬底基板110的边缘进行相应的强化处理或软化处理，防止相邻两衬底基板110在无缝拼接时，由于干涉所造成的衬底基板110破裂现象。\n\n[0031]在本申请一实施例中，所述LED芯片130固定于所述衬底基板110上，且所述LED芯片130为三基色LED芯片，包括：红色LED芯片131、绿色LED芯片132以及蓝色LED芯片133。所述LED芯片130优选为Mini LED(亚毫米发光二极管)芯片，Mini LED灯的尺寸规格在微米级，能够提供更高的分辨率，进而提升显示效果。\n\n[0032]本申请中，所述拼接单元100包括显示区11以及与所述显示区11相邻的拼接显示区12；所述衬底基板110上的所述走线孔111对应设置于所述显示区11内；所述拼接显示区12背向所述显示区11的一侧边上设置有拼接凸起部112和/或拼接凹陷部113。\n\n[0033]请参阅图2至图4，在一实施例中，所述拼接单元100包括第一拼接单元101与第二拼接单元102；当所述第一拼接单元101与所述第二拼接单元102拼接时，所述第一拼接单元101的所述拼接凸起部112与所述第二拼接单元102的所述拼接凹陷部113相互拼合。可以理解的是，所述第一拼接单元101的所述拼接凸起部112与所述第二拼接单元102的所述拼接凹陷部113是相互匹配的，能够完美配合，从而不产生缝隙。\n\n[0034]本实施例中，如图2所示，当所述拼接凸起部112为三角形时，所述拼接凹陷部113为与所述拼接凸起部112匹配的三角形；或者，如图3所示，当所述拼接凸起部112为矩形时，所述拼接凹陷部113为与所述拼接凸起部112匹配的矩形；或者，如图4所示，当所述拼接凸起部112为梯形时，所述拼接凹陷部113为与所述拼接凸起部112匹配的梯形；或者，当所述拼接凸起部112为弧形时，所述拼接凹陷部113为与所述拼接凸起部112匹配的弧形。本申请中的所述拼接凸起部112与所述拼接凹陷部113的形状并不仅限于图2至图4所示，还可以是其他形状，本申请不再赘述。\n\n[0035]在一实施例中，由于所述衬底基板110上的所述驱动线路120会反射环境光影响环境对比度，每一所述拼接单元100还包括一遮光矩阵150，设置于所述衬底基板110上，覆盖所述驱动线路120并暴露出所述LED芯片130。所述遮光矩阵150能够有效地遮挡所述衬底基板110上的所述驱动线路120，同时露出所述LED芯片130，在不影响所述拼接显示面板10的出光效果的前提下，提升所述拼接显示面板10的对比度，进而提升显示效果。\n\n[0036]在一实施例中，每一所述拼接单元100还包括：一封装层160，覆盖所述LED芯片130与所述衬底基板110。所述封装层160的材料包括：环氧树脂或光学胶。所述封装层160的设置能够为所述LED芯片130提供保护，防止所述LED芯片130由于外界环境的干扰所造成的失效问题，例如：水蒸气、氧气等。\n\n[0037]相应地，请结合参阅图1与图5，本申请实施例还提供一种上述任一实施例中所述的拼接单元100的制备方法，包括如下步骤：\n\n[0038]步骤S1：提供一衬底基板110，并在所述衬底基板110的一侧边上形成有拼接凸起部112和/或拼接凹陷部113；\n\n[0039]步骤S2：在所述衬底基板110上进行打孔，形成多个走线孔111；\n\n[0040]步骤S3：在所述衬底基板110的一侧制备驱动线路120，并将所述驱动线路120通过所述走线孔111贯穿至所述衬底基板110的另一侧；\n\n[0041]步骤S4：在所述衬底基板110制备有所述驱动线路120的一侧装配LED芯片130，并将所述LED芯片130与所述驱动线路120导通；\n\n[0042]步骤S5：在所述衬底基板110背向所述LED芯片130的一侧绑定覆晶薄膜140，以与所述驱动线路120电连接。\n\n[0043]在一实施例中，所述拼接单元100的制备方法，还包括如下步骤：\n\n[0044]步骤S41，在所述衬底基板110装配有所述LED芯片130的一侧形成一遮光矩阵150；述遮光矩阵150能够有效地遮挡所述衬底基板110上的所述驱动线路120，同时露出所述LED芯片130，在不影响所述拼接显示面板10的出光效果的前提下，提升所述拼接显示面板10的对比度，进而提升显示效果。\n\n[0045]在一实施例中，所述拼接单元100的制备方法，还包括如下步骤：\n\n[0046]步骤S42，在所述衬底基板110装配有所述LED芯片130的一侧沉积一封装层160，以覆盖所述LED芯片130与所述衬底基板110；从而为所述LED芯片130提供保护，防止所述LED芯片130由于外界环境的干扰所造成的失效问题。\n\n[0047]可以理解的是，所述拼接显示面板10是通过将多个上述制备的所述拼接单元100拼接而形成的。\n\n[0048]相应地，请参阅图6，本申请实施例还提供一种拼接显示装置1包括上述任一实施例中所述的拼接显示面板10，所述拼接显示装置1还包括：至少两个拼装机构20，每一所述拼装机构20对应于所述拼接单元100设置，以将所述拼接单元100固定于一框架上，从而实现多个所述拼接显示面板10之间的稳固连接，以将多个小尺寸的所述拼接显示面板10集成为一个整体的大尺寸显示面板，且由于各个小尺寸的所述拼接显示面板10之间的无缝拼接，能够使集成后的大尺寸显示面板的显示效果更佳，提升了产品的市场竞争力。\n\n[0049]综上，本申请实施例提供一种拼接显示面板10，所述拼接显示面板10包括至少两个拼接单元100，分别为第一拼接单元101与第二拼接单元102；当所述第一拼接单元101与所述第二拼接单元102拼接时，所述第一拼接单元101的所述拼接凸起部112与所述第二拼接单元102的所述拼接凹陷部113相互拼合，此时，相邻两个所述拼接单元100拼接时所形成的拼缝为非直线型，一方面可以弱化由于直线型拼缝所造成的显示不良的问题，另一方面能够使相邻两个所述拼接单元100拼接后不会发生相对位移，也不会产生摩擦，避免了所述衬底基板110产生损伤。并且通过在所述衬底基板110上设置有多个贯穿所述衬底基板110的走线孔111，能够将所述衬底基板110背向所述LED芯片130一侧的所述覆晶薄膜140与所述驱动线路120导通，进而导通所述LED芯片130。这样设置能够完美地将所述覆晶薄膜140隐藏于所述衬底基板110下方，实现拼接单元100之间的无缝拼接。\n\n[0050]进一步地，由于所述衬底基板110上的所述驱动线路120会反射环境光影响环境对比度，每一所述拼接单元100还包括一遮光矩阵150，设置于所述衬底基板110上，覆盖所述驱动线路120并暴露出所述LED芯片130，所述遮光矩阵150能够有效地遮挡所述衬底基板110上的所述驱动线路120，同时露出所述LED芯片130，在不影响所述拼接显示面板10的出光效果的前提下，提升所述拼接显示面板10的对比度，进而提升显示效果。所述封装层160的设置能够为所述LED芯片130提供保护，防止所述LED芯片130由于外界环境的干扰，所造成的失效问题。\n\n[0051]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0052]以上对本申请实施例所提供的技术方案进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10985, 24039, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种显示面板及其制备方法。\n\n背景技术\n\n[0002]目前的次毫米发光二极管(Mini LED)的贴片STM(Surface Mounted Technology)制程中，一般需要在Mini LED的邦定处(bonding pad)点锡膏，用于实现Mini LED与基板的电连接。\n\n[0003]由于基板上的图案比较致密，金属走线相互交错且容易被刮伤，而锡膏制程中，一般采用直接接触工艺，如丝网印刷和滚轮传输。其中丝网印刷的丝网板与基板的接触深度较深、丝网印刷的刮片的压力过大，会刮伤金属走线。其中丝网印刷的刮片或者滚轮传输的滚轮或者基板的表面不平，容易导致基板与刮片或者滚轮的接触面积变小，造成局部应力集中，容易导致基板内部的绝缘层产生裂缝进而导致栅极层和源漏极层直接接触发生短路。而且刮片或者滚轮的速度不均匀易造成锡膏厚度不均匀，导致贴片时，锡膏较厚处容易顶起Mini LED，最终导致Mini LED发生偏移。\n\n发明内容\n\n[0004]本发明的目的是提供一种显示面板及其制备方法，其能够解决现有Mini LED的邦定过程中的锡膏制程中存在的金属走线易被刮伤、金属走线间易发生短路现象等问题。\n\n[0005]为了解决上述问题，本发明提供了一种显示面板，其包括：基底层；多个导电单元，相互间隔设置于所述基底层上；以及多个Mini LED，相互间隔设置于所述导电单元远离所述基底层的一侧；每一所述Mini LED均电连接至所述导电单元；其中，所述导电单元的材质为导电油墨，所述导电油墨包括预聚物、单体、导电填料及光引发剂。\n\n[0006]进一步的，所述预聚物包括：超支化聚氨酯丙烯酸酯及环氧丙烯酸酯中的一种或多种。\n\n[0007]进一步的，所述单体包括：三羟甲基丙烷三丙烯酸酯和戊二醇二丙烯酸酯中的一种或多种。\n\n[0008]进一步的，所述光引发剂为异丙基硫杂蒽酮。\n\n[0009]进一步的，所述导电填料包括球形纳米银粉和片形纳米银粉中的一种或多种。\n\n[0010]进一步的，所述单体与所述预聚物的比值范围为1：(1-2)。\n\n[0011]进一步的，所述环氧丙烯酸酯与所述超支化聚氨酯丙烯酸酯的比值范围为2：(2-4)。\n\n[0012]进一步的，所述显示面板还包括多个导电元件，相互间隔设置于所述基底层与所述导电单元之间，且与所述导电单元一一对应设置。\n\n[0013]为了解决上述问题，本发明提供了一种显示面板的制备方法，其包括以下步骤：提供一基底层；在所述基底层上涂布导电油墨，利用曝光显影技术对所述导电油墨进行图案化处理，形成相互间隔设置于所述基底层上的导电油墨单元；所述导电油墨包括预聚物、单体、导电填料及光引发剂；将多个Mini LED相互间隔设置于所述导电油墨单元远离所述基底层的一侧，每一所述Mini LED均电连接至所述导电油墨单元；以及对所述导电油墨单元进行固化处理，形成导电单元。\n\n[0014]进一步的，所述导电油墨的厚度范围为20-30μm。\n\n[0015]本发明的优点是：本发明利用预聚物、单体、导电填料及光引发剂形成导电油墨，然后利用导电油墨制备形成的导电单元实现Mini LED与导电元件之间的电性连接，利用导电油墨本身的粘性吸附Mini LED，提升Mini LED的转移精度，防止Mini LED与导电单元之间吸附不牢固，影响导电单元与Mini LED之间的电连接。采用涂布曝光显影的方式制作导电单元，可控的调节相邻的导电单元之间的间隙，进一步的提升Mini LED的转移精度。\n\n附图说明\n\n[0016]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0017]图1是本发明的显示面板的结构示意图；\n\n[0018]图2是本发明的显示面板的基底层的结构示意图；\n\n[0019]图3是本发明的显示面板的制备步骤图；\n\n[0020]图4是在导电元件及相邻的导电元件之间的基底层上涂布导电油墨后的平面示意图；\n\n[0021]图5是图4导电油墨经过图案化处理形成导电油墨单元的平面示意图；\n\n[0022]图6是图导电元件5的A-A剖面图；\n\n[0023]图7是将Mini LED设置于导电油墨单元上的结构示意图；\n\n[0024]图8是图6去除转移基板对导电油墨单元进行固化的结构示意图。\n\n[0025]附图标记说明：\n\n[0026]100、显示面板；\n\n[0027]1、基底层； 2、导电元件；\n\n[0028]3、导电单元； 4、Mini LED；\n\n[0029]5、转移基板；\n\n[0030]11、基板； 12、缓冲层；\n\n[0031]13、薄膜晶体管层； 14、平坦层；\n\n[0032]31、导电油墨； 32、导电油墨单元。\n\n具体实施方式\n\n[0033]以下结合说明书附图详细说明本发明的优选实施例，以向本领域中的技术人员完整介绍本发明的技术内容，以举例证明本发明可以实施，使得本发明公开的技术内容更加清楚，使得本领域的技术人员更容易理解如何实施本发明。然而本发明可以通过许多不同形式的实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例，下文实施例的说明并非用来限制本发明的范围。\n\n[0034]本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是附图中的方向，本文所使用的方向用语是用来解释和说明本发明，而不是用来限定本发明的保护范围。\n\n[0035]在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。此外，为了便于理解和描述，附图所示的每一组件的尺寸和厚度是任意示出的，本发明并没有限定每个组件的尺寸和厚度。\n\n[0036]如图1所示，本实施例提供了一种显示面板100。所述显示面板100包括：基底层1、多个导电元件2、多个导电单元3以及多个Mini LED 4。\n\n[0037]如图2，所述基底层1包括基板11、缓冲层12、薄膜晶体管层13及平坦层14。\n\n[0038]其中，基板11的材质为玻璃、聚酰亚胺、聚碳酸酯、聚对苯二甲酸乙二醇酯以及聚萘二甲酸乙二醇酯中的一种或多种，由此基板11可具有较好的抗冲击能力，可以有效保护显示面板100。\n\n[0039]其中，缓冲层12设于基板11的一侧的表面上。缓冲层12主要是起缓冲作用，缓冲层12的材质包括SiNx及SiOx中的一种或多种。\n\n[0040]其中，薄膜晶体管层13设置于所述缓冲层12远离所述基板11的一侧的表面上。薄膜晶体管层13主要用于控制像素的电子转化，且为显示面板100提供电路支持。其中，所述薄膜晶体管层13包括：有源层、第一绝缘层、栅极层、层间绝缘层以及源漏极层等膜层，在此不再进行赘述。\n\n[0041]其中，平坦层14设置于所述薄膜晶体管层13远离所述基板11的一侧的表面上。平坦层14主要是起平整作用，为其上膜层制备提供一平整的表面，平坦层14还可以起到缓冲作用。其中，平坦层14的材质为亚克力系光刻胶、硅系光刻胶以及聚酰亚胺系光刻胶中的一种或多种。\n\n[0042]其中，多个导电元件2相互间隔设置于所述基底层1上。本实施例中，所述导电元件2的材质为氧化铟锡(英文全称：Indium tin oxide，简称ITO)。在其他实施例中，所述导电元件2也可以采用其他导电材质。\n\n[0043]其中，多个导电单元3相互间隔设置于所述导电元件2远离所述基底层1的一侧的表面上，且与所述导电元件2一一对应。\n\n[0044]其中，多个Mini LED 4相互间隔设置于所述导电单元3远离所述基底层1的一侧的表面上。其中，所述每一所述Mini LED 4均包括第一电极41及第二电极42。所述第一电极41与所述第二电极42均分别对应电连接至一个导电单元3。\n\n[0045]其中，所述导电单元3的材质为导电油墨31，所述导电油墨31包括预聚物、单体、导电填料及光引发剂。\n\n[0046]其中，所述预聚物包括超支化聚氨酯丙烯酸酯及环氧丙烯酸酯中的一种或多种。所述环氧丙烯酸酯与所述超支化聚氨酯丙烯酸酯的比值范围为2：(2-4)本实施例中，所述预聚物包括超支化聚氨酯丙烯酸酯及环氧丙烯酸酯，且所述环氧丙烯酸酯与所述超支化聚氨酯丙烯酸酯的比值范围为2：3。\n\n[0047]所述单体包括：三羟甲基丙烷三丙烯酸酯和戊二醇二丙烯酸酯中的一种或多种。所述单体与所述预聚物的比值范围为1：(1-2)。本实施例中，所述单体与所述预聚物的比值范围为1：1.5。\n\n[0048]本实施例中，所述光引发剂为异丙基硫杂蒽酮(ITX)。所述光引发剂的含量为导电油墨除去导电填料之外的含量的10％。\n\n[0049]其中，所述导电填料包括球形纳米银粉和片形纳米银粉中的一种或多种。本实施例中，所述导电填料包括球形纳米银粉和片形纳米银粉，且所述球形纳米银粉和片形纳米银粉的比值为3:7。\n\n[0050]由此本实施例的预聚物、单体、导电填料及光引发剂混合形成的导电油墨31的导电性能更好、附着力更高、光固化时间更短、电阻率较低。具体的，本实施例的导电油墨31的固化时间范围为6s-7s，且电阻率可以达到10-6Ωm。\n\n[0051]综上，利用预聚物、单体、导电填料及光引发剂形成导电油墨31，然后利用导电油墨31制备形成的导电单元3实现Mini LED 4与导电元件2之间的电性连接，利用导电油墨31本身的粘性吸附Mini LED 4，提升Mini LED 4的转移精度，防止Mini LED 4与导电单元3之间吸附不牢固，影响导电单元3与Mini LED 4之间的电连接。\n\n[0052]如图3-图8所示，本发明提供了一种显示面板100的制备方法，其包括以下步骤：S1，提供一基底层1；S2，在所述基底层1上形成相互间隔的导电元件2；S3，在所述导电元件2远离所述基底层1的一侧的表面及相邻的所述导电元件2之间的基底层1上涂布导电油墨31，利用曝光显影技术对所述导电油墨31进行图案化处理，去除相邻的所述导电元件2之间的基底层1上的导电油墨31，形成相互间隔且与所述导电元件2一一对应的导电油墨单元32，所述导电油墨31包括预聚物、单体、导电填料及光引发剂；S4，将多个所述Mini LED 4相互间隔设置于所述导电单元3远离所述基底层1的一侧，每一所述Mini LED 4均电连接至所述导电油墨单元32；以及S5，对所述导电油墨单元32进行固化处理，形成导电单元3。\n\n[0053]如图4所示，采用喷墨打印等方式在所述导电元件2远离所述基底层1的一侧的表面及相邻的所述导电元件2之间的基底层1上涂布导电油墨31。其中，所述导电油墨31的厚度范围为20-30μm，本实施例中，所述导电油墨31的厚度为25μm。\n\n[0054]如图5、图6所示，利用曝光显影技术去除相邻的所述导电元件2之间的基底层1上的导电油墨31，形成相互间隔且与所述导电元件2一一对应的导电油墨单元32，可控的调节相邻的导电油墨单元32之间的间隙，进一步的提升Mini LED 4的转移精度。\n\n[0055]如图7所示，将所述Mini LED 4制作于转移基板5上，然后将Mini LED4与转移基板5整体热压或者冷压在导电油墨单元32远离所述基底层1的一侧的表面上。利用导电油墨单元32本身的粘性吸附Mini LED 4，提升Mini LED4的转移精度，防止Mini LED 4与导电油墨单元32之间吸附不牢固，影响导电油墨单元32与Mini LED 4之间的电连接。\n\n[0056]如图8所示，先将转移基板5进行剥离去除，然后采用紫外光(UV光)对所述导电油墨单元23进行固化处理，形成导电单元3。\n\n[0057]以上对本申请所提供的一种显示面板及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种显示面板及其制备方法。\n\n背景技术\n\n[0002]目前的次毫米发光二极管(Mini LED)的贴片STM(Surface Mounted Technology)制程中，一般需要在Mini LED的邦定处(bonding pad)点锡膏，用于实现Mini LED与基板的电连接。\n\n[0003]由于基板上的图案比较致密，金属走线相互交错且容易被刮伤，而锡膏制程中，一般采用直接接触工艺，如丝网印刷和滚轮传输。其中丝网印刷的丝网板与基板的接触深度较深、丝网印刷的刮片的压力过大，会刮伤金属走线。其中丝网印刷的刮片或者滚轮传输的滚轮或者基板的表面不平，容易导致基板与刮片或者滚轮的接触面积变小，造成局部应力集中，容易导致基板内部的绝缘层产生裂缝进而导致栅极层和源漏极层直接接触发生短路。而且刮片或者滚轮的速度不均匀易造成锡膏厚度不均匀，导致贴片时，锡膏较厚处容易顶起Mini LED，最终导致Mini LED发生偏移。\n\n发明内容\n\n[0004]本发明的目的是提供一种显示面板及其制备方法，其能够解决现有Mini LED的邦定过程中的锡膏制程中存在的金属走线易被刮伤、金属走线间易发生短路现象等问题。\n\n[0005]为了解决上述问题，本发明提供了一种显示面板，其包括：基底层；多个导电单元，相互间隔设置于所述基底层上；以及多个Mini LED，相互间隔设置于所述导电单元远离所述基底层的一侧；每一所述Mini LED均电连接至所述导电单元；其中，所述导电单元的材质为导电油墨，所述导电油墨包括预聚物、单体、导电填料及光引发剂。\n\n[0006]进一步的，所述预聚物包括：超支化聚氨酯丙烯酸酯及环氧丙烯酸酯中的一种或多种。\n\n[0007]进一步的，所述单体包括：三羟甲基丙烷三丙烯酸酯和戊二醇二丙烯酸酯中的一种或多种。\n\n[0008]进一步的，所述光引发剂为异丙基硫杂蒽酮。\n\n[0009]进一步的，所述导电填料包括球形纳米银粉和片形纳米银粉中的一种或多种。\n\n[0010]进一步的，所述单体与所述预聚物的比值范围为1：(1-2)。\n\n[0011]进一步的，所述环氧丙烯酸酯与所述超支化聚氨酯丙烯酸酯的比值范围为2：(2-4)。\n\n[0012]进一步的，所述显示面板还包括多个导电元件，相互间隔设置于所述基底层与所述导电单元之间，且与所述导电单元一一对应设置。\n\n[0013]为了解决上述问题，本发明提供了一种显示面板的制备方法，其包括以下步骤：提供一基底层；在所述基底层上涂布导电油墨，利用曝光显影技术对所述导电油墨进行图案化处理，形成相互间隔设置于所述基底层上的导电油墨单元；所述导电油墨包括预聚物、单体、导电填料及光引发剂；将多个Mini LED相互间隔设置于所述导电油墨单元远离所述基底层的一侧，每一所述Mini LED均电连接至所述导电油墨单元；以及对所述导电油墨单元进行固化处理，形成导电单元。\n\n[0014]进一步的，所述导电油墨的厚度范围为20-30μm。\n\n[0015]本发明的优点是：本发明利用预聚物、单体、导电填料及光引发剂形成导电油墨，然后利用导电油墨制备形成的导电单元实现Mini LED与导电元件之间的电性连接，利用导电油墨本身的粘性吸附Mini LED，提升Mini LED的转移精度，防止Mini LED与导电单元之间吸附不牢固，影响导电单元与Mini LED之间的电连接。采用涂布曝光显影的方式制作导电单元，可控的调节相邻的导电单元之间的间隙，进一步的提升Mini LED的转移精度。\n\n附图说明\n\n[0016]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0017]图1是本发明的显示面板的结构示意图；\n\n[0018]图2是本发明的显示面板的基底层的结构示意图；\n\n[0019]图3是本发明的显示面板的制备步骤图；\n\n[0020]图4是在导电元件及相邻的导电元件之间的基底层上涂布导电油墨后的平面示意图；\n\n[0021]图5是图4导电油墨经过图案化处理形成导电油墨单元的平面示意图；\n\n[0022]图6是图导电元件5的A-A剖面图；\n\n[0023]图7是将Mini LED设置于导电油墨单元上的结构示意图；\n\n[0024]图8是图6去除转移基板对导电油墨单元进行固化的结构示意图。\n\n[0025]附图标记说明：\n\n[0026]100、显示面板；\n\n[0027]1、基底层； 2、导电元件；\n\n[0028]3、导电单元； 4、Mini LED；\n\n[0029]5、转移基板；\n\n[0030]11、基板； 12、缓冲层；\n\n[0031]13、薄膜晶体管层； 14、平坦层；\n\n[0032]31、导电油墨； 32、导电油墨单元。\n\n具体实施方式\n\n[0033]以下结合说明书附图详细说明本发明的优选实施例，以向本领域中的技术人员完整介绍本发明的技术内容，以举例证明本发明可以实施，使得本发明公开的技术内容更加清楚，使得本领域的技术人员更容易理解如何实施本发明。然而本发明可以通过许多不同形式的实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例，下文实施例的说明并非用来限制本发明的范围。\n\n[0034]本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是附图中的方向，本文所使用的方向用语是用来解释和说明本发明，而不是用来限定本发明的保护范围。\n\n[0035]在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。此外，为了便于理解和描述，附图所示的每一组件的尺寸和厚度是任意示出的，本发明并没有限定每个组件的尺寸和厚度。\n\n[0036]如图1所示，本实施例提供了一种显示面板100。所述显示面板100包括：基底层1、多个导电元件2、多个导电单元3以及多个Mini LED 4。\n\n[0037]如图2，所述基底层1包括基板11、缓冲层12、薄膜晶体管层13及平坦层14。\n\n[0038]其中，基板11的材质为玻璃、聚酰亚胺、聚碳酸酯、聚对苯二甲酸乙二醇酯以及聚萘二甲酸乙二醇酯中的一种或多种，由此基板11可具有较好的抗冲击能力，可以有效保护显示面板100。\n\n[0039]其中，缓冲层12设于基板11的一侧的表面上。缓冲层12主要是起缓冲作用，缓冲层12的材质包括SiNx及SiOx中的一种或多种。\n\n[0040]其中，薄膜晶体管层13设置于所述缓冲层12远离所述基板11的一侧的表面上。薄膜晶体管层13主要用于控制像素的电子转化，且为显示面板100提供电路支持。其中，所述薄膜晶体管层13包括：有源层、第一绝缘层、栅极层、层间绝缘层以及源漏极层等膜层，在此不再进行赘述。\n\n[0041]其中，平坦层14设置于所述薄膜晶体管层13远离所述基板11的一侧的表面上。平坦层14主要是起平整作用，为其上膜层制备提供一平整的表面，平坦层14还可以起到缓冲作用。其中，平坦层14的材质为亚克力系光刻胶、硅系光刻胶以及聚酰亚胺系光刻胶中的一种或多种。\n\n[0042]其中，多个导电元件2相互间隔设置于所述基底层1上。本实施例中，所述导电元件2的材质为氧化铟锡(英文全称：Indium tin oxide，简称ITO)。在其他实施例中，所述导电元件2也可以采用其他导电材质。\n\n[0043]其中，多个导电单元3相互间隔设置于所述导电元件2远离所述基底层1的一侧的表面上，且与所述导电元件2一一对应。\n\n[0044]其中，多个Mini LED 4相互间隔设置于所述导电单元3远离所述基底层1的一侧的表面上。其中，所述每一所述Mini LED 4均包括第一电极41及第二电极42。所述第一电极41与所述第二电极42均分别对应电连接至一个导电单元3。\n\n[0045]其中，所述导电单元3的材质为导电油墨31，所述导电油墨31包括预聚物、单体、导电填料及光引发剂。\n\n[0046]其中，所述预聚物包括超支化聚氨酯丙烯酸酯及环氧丙烯酸酯中的一种或多种。所述环氧丙烯酸酯与所述超支化聚氨酯丙烯酸酯的比值范围为2：(2-4)本实施例中，所述预聚物包括超支化聚氨酯丙烯酸酯及环氧丙烯酸酯，且所述环氧丙烯酸酯与所述超支化聚氨酯丙烯酸酯的比值范围为2：3。\n\n[0047]所述单体包括：三羟甲基丙烷三丙烯酸酯和戊二醇二丙烯酸酯中的一种或多种。所述单体与所述预聚物的比值范围为1：(1-2)。本实施例中，所述单体与所述预聚物的比值范围为1：1.5。\n\n[0048]本实施例中，所述光引发剂为异丙基硫杂蒽酮(ITX)。所述光引发剂的含量为导电油墨除去导电填料之外的含量的10％。\n\n[0049]其中，所述导电填料包括球形纳米银粉和片形纳米银粉中的一种或多种。本实施例中，所述导电填料包括球形纳米银粉和片形纳米银粉，且所述球形纳米银粉和片形纳米银粉的比值为3:7。\n\n[0050]由此本实施例的预聚物、单体、导电填料及光引发剂混合形成的导电油墨31的导电性能更好、附着力更高、光固化时间更短、电阻率较低。具体的，本实施例的导电油墨31的固化时间范围为6s-7s，且电阻率可以达到10-6Ωm。\n\n[0051]综上，利用预聚物、单体、导电填料及光引发剂形成导电油墨31，然后利用导电油墨31制备形成的导电单元3实现Mini LED 4与导电元件2之间的电性连接，利用导电油墨31本身的粘性吸附Mini LED 4，提升Mini LED 4的转移精度，防止Mini LED 4与导电单元3之间吸附不牢固，影响导电单元3与Mini LED 4之间的电连接。\n\n[0052]如图3-图8所示，本发明提供了一种显示面板100的制备方法，其包括以下步骤：S1，提供一基底层1；S2，在所述基底层1上形成相互间隔的导电元件2；S3，在所述导电元件2远离所述基底层1的一侧的表面及相邻的所述导电元件2之间的基底层1上涂布导电油墨31，利用曝光显影技术对所述导电油墨31进行图案化处理，去除相邻的所述导电元件2之间的基底层1上的导电油墨31，形成相互间隔且与所述导电元件2一一对应的导电油墨单元32，所述导电油墨31包括预聚物、单体、导电填料及光引发剂；S4，将多个所述Mini LED 4相互间隔设置于所述导电单元3远离所述基底层1的一侧，每一所述Mini LED 4均电连接至所述导电油墨单元32；以及S5，对所述导电油墨单元32进行固化处理，形成导电单元3。\n\n[0053]如图4所示，采用喷墨打印等方式在所述导电元件2远离所述基底层1的一侧的表面及相邻的所述导电元件2之间的基底层1上涂布导电油墨31。其中，所述导电油墨31的厚度范围为20-30μm，本实施例中，所述导电油墨31的厚度为25μm。\n\n[0054]如图5、图6所示，利用曝光显影技术去除相邻的所述导电元件2之间的基底层1上的导电油墨31，形成相互间隔且与所述导电元件2一一对应的导电油墨单元32，可控的调节相邻的导电油墨单元32之间的间隙，进一步的提升Mini LED 4的转移精度。\n\n[0055]如图7所示，将所述Mini LED 4制作于转移基板5上，然后将Mini LED4与转移基板5整体热压或者冷压在导电油墨单元32远离所述基底层1的一侧的表面上。利用导电油墨单元32本身的粘性吸附Mini LED 4，提升Mini LED4的转移精度，防止Mini LED 4与导电油墨单元32之间吸附不牢固，影响导电油墨单元32与Mini LED 4之间的电连接。\n\n[0056]如图8所示，先将转移基板5进行剥离去除，然后采用紫外光(UV光)对所述导电油墨单元23进行固化处理，形成导电单元3。\n\n[0057]以上对本申请所提供的一种显示面板及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10986, 24040, '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示模组及其制备方法、显示装置。\n\n背景技术\n\n[0002]OLED(Organic Light Emitting Diode，有机发光二极管)显示面板因具有柔性可弯曲、自发光、广视角等优点而成为目前市场上的主流显示产品，被誉为继LCD(LiquidCrystal Display，液晶显示器)之后最有发展潜力的显示技术。OLED显示面板的发光功能层采用三明治结构，当两端通入电流后，电子和空穴被注入到有机发光层中，不同的有机发光材料在激子激发下发出不同颜色的光，从而应用于各种显示产品。\n\n[0003]OLED显示面板的一大优势是可以用于制作可折叠显示模组，但是可折叠显示模组有一个很严重的缺点——“橘皮”现象。“橘皮”的本质是显示模组的表面不平整。显示模组的表面不平整的原因是：为了达到可折叠功能，显示模组中的各膜层使用的膜材都比较软、薄，材料的厚度均匀性不一致，而且在Roller(滚轮)的压力作用下，导致显示模组的外观有“橘皮”现象，极大影响用户的使用体验。故，有必要改善这一缺陷。\n\n发明内容\n\n[0004]本发明实施例提供一种显示模组，用于解决现有技术的显示模组中的各膜层，由于材料自身的不平整以及柔性贴合应力的存在，导致显示模组的表面不平整，人眼可见“橘皮”现象的技术问题。\n\n[0005]本发明实施例提供一种显示模组，包括柔性显示面板和复合盖板层；所述复合盖板层位于所述柔性显示面板的出光侧，所述复合盖板层包括超薄玻璃和保护盖板，所述保护盖板位于所述超薄玻璃远离所述柔性显示面板的一侧；其中，所述保护盖板和所述超薄玻璃之间设置有第一光学胶层，所述第一光学胶层靠近所述保护盖板的一侧的表面粗糙度小于所述第一光学胶层靠近所述超薄玻璃的一侧的表面粗糙度。\n\n[0006]在本发明实施例提供的显示模组中，所述超薄玻璃与所述柔性显示面板之间设置有第二光学胶层，所述第一光学胶层靠近所述超薄玻璃的一侧的表面粗糙度小于或等于所述第二光学胶层靠近所述柔性显示面板的一侧的表面粗糙度。\n\n[0007]在本发明实施例提供的显示模组中，所述第一光学胶层由液态胶固化形成，所述第二光学胶层由固态胶形成或由液态胶固化形成。\n\n[0008]在本发明实施例提供的显示模组中，所述液态胶为水胶，所述水胶的粘度大于或等于10厘泊且小于或等于30厘泊。\n\n[0009]在本发明实施例提供的显示模组中，在所述柔性显示面板至所述复合盖板层的方向上，所述第一光学胶层的厚度大于或等于所述第二光学胶层的厚度，所述第一光学胶层的厚度大于或等于25微米且小于或等于50微米。\n\n[0010]在本发明实施例提供的显示模组中，所述显示模组还包括钢片层、泡棉层以及支撑层；所述钢片层位于所述柔性显示面板远离所述复合盖板层的一侧；所述泡棉层位于所述钢片层和所述柔性显示面板之间；所述支撑层位于所述泡棉层和所述柔性显示面板之间；其中，所述第一光学胶层靠近所述保护盖板的一侧的表面粗糙度小于或等于所述泡棉层靠近所述钢片层的一侧的表面粗糙度。\n\n[0011]本发明实施例提供一种显示模组的制备方法，包括步骤：在柔性显示面板的出光侧制备超薄玻璃；在所述超薄玻璃远离所述柔性显示面板的一侧表面制备第一光学胶层，所述第一光学胶层远离所述超薄玻璃的一侧的表面粗糙度小于所述第一光学胶层靠近所述超薄玻璃的一侧的表面粗糙度；在所述第一光学胶层远离所述超薄玻璃的一侧表面制备保护盖板，所述保护盖板与所述超薄玻璃构成复合盖板层。\n\n[0012]在本发明实施例提供的显示模组的制备方法中，所述制备第一光学胶层的步骤包括：在所述超薄玻璃远离所述柔性显示面板的一侧表面涂布一层液态胶；对所述液态胶分别进行第一次紫外光固化和第二次紫外光固化。\n\n[0013]在本发明实施例提供的显示模组的制备方法中，所述第一次紫外光固化的光源为发光二极管，所述第二次紫外光固化的光源为金属卤素灯。\n\n[0014]本发明实施例还提供一种显示装置，包括上述的显示模组以及与所述显示模组电性连接的驱动芯片。\n\n[0015]有益效果：本发明实施例提供的一种显示模组，包括柔性显示面板和复合盖板层；复合盖板层位于柔性显示面板的出光侧，复合盖板层包括超薄玻璃和保护盖板，保护盖板位于超薄玻璃远离柔性显示面板的一侧；其中，保护盖板和超薄玻璃之间设置有第一光学胶层，第一光学胶层靠近保护盖板的一侧的表面粗糙度小于第一光学胶层靠近超薄玻璃的一侧的表面粗糙度；本发明通过在保护盖板和超薄玻璃之间设置第一光学胶层，且第一光学胶层靠近保护盖板的一侧的表面粗糙度小于第一光学胶层靠近超薄玻璃的一侧的表面粗糙度，可改善保护盖板的表面平整度，有效改善显示模组的外观“橘皮”现象。\n\n附图说明\n\n[0016]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。\n\n[0017]图1是本发明实施例提供的显示模组的基本结构示意图。\n\n[0018]图2是本发明实施例提供的显示模组的制备方法流程图。\n\n[0019]图3a～图3c是本发明实施例提供的显示模组的制备工艺流程中各组件的基本结构示意图。\n\n[0020]图4a和图4b分别是现有技术的显示模组的外观示意图和本发明实施例提供的显示模组的外观示意图。\n\n[0021]图5a和图5b分别是光栅下现有技术的显示模组的外观示意图和本发明实施例提供的显示模组的外观示意图。\n\n具体实施方式\n\n[0022]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。在附图中，为了清晰及便于理解和描述，附图中绘示的组件的尺寸和厚度并未按照比例。\n\n[0023]如图1所示，为本发明实施例提供的显示模组的基本结构示意图，所述显示模组包括柔性显示面板10和复合盖板层20；所述复合盖板层20位于所述柔性显示面板10的出光侧，所述复合盖板层20包括超薄玻璃201和保护盖板202，所述保护盖板202位于所述超薄玻璃201远离所述柔性显示面板10的一侧；其中，所述保护盖板202和所述超薄玻璃201之间设置有第一光学胶层30，所述第一光学胶层30靠近所述保护盖板202的一侧的表面粗糙度小于所述第一光学胶层30靠近所述超薄玻璃201的一侧的表面粗糙度。\n\n[0024]可以理解的是，本发明实施例提供的复合盖板层20由超薄玻璃201和保护盖板202共同构成，其中，超薄玻璃201具有较好的硬度，但其抗冲击性能力不足，当受到强烈冲击时，很容易碎裂。因此，超薄玻璃201不能作为整个显示模组的第一表面(即显示模组外露的一面)，换而言之就是，需要在超薄玻璃201上面设置一层保护盖板202，以弥补其抗冲击性能力的不足。一般而言，保护盖板202可采用CPI(无色聚酰亚胺)或PET(聚对苯二甲酸乙二醇酯)，即可增强超薄玻璃201的抗冲击性能力，同时超薄玻璃201自然而然也成为了上层CPI或PET的硬质衬底，也弥补了CPI或PET太软不耐刮的缺陷。\n\n[0025]需要说明的是，本发明实施例提供的柔性显示面板10具有可折叠性能，而为了提高整个显示模组的可折叠性能，显示模组中的各膜层使用的膜材都比较软、薄，材料的厚度均匀性不一致，而且在Roller(滚轮)柔性贴合的压力作用下，导致显示模组的表面不平整，导致显示模组的外观有“橘皮”现象，极大影响用户的使用体验。在本发明实施例中，保护盖板202作为显示模组的第一表面，本发明实施例通过在保护盖板202和超薄玻璃201之间设置第一光学胶层30，且第一光学胶层30靠近保护盖板202的一侧的表面粗糙度小于第一光学胶层30靠近超薄玻璃201的一侧的表面粗糙度，使得保护盖板202的表面更加平整，有效改善了显示模组的外观“橘皮”现象。\n\n[0026]在一种实施例中，所述超薄玻璃201与所述柔性显示面板10之间设置有第二光学胶层40，所述第一光学胶层30靠近所述超薄玻璃201的一侧的表面粗糙度(即第二光学胶层40靠近超薄玻璃201的一侧的表面粗糙度)小于或等于所述第二光学胶层40靠近所述柔性显示面板10的一侧的表面粗糙度。可以理解的是，柔性显示面板10通过第二光学胶层40与超薄玻璃201贴合，其中，第二光学胶层40靠近超薄玻璃201的一侧的表面粗糙度可以与第二光学胶层40靠近柔性显示面板10的一侧的表面粗糙度相等(即第一光学胶层30靠近超薄玻璃201的一侧的表面粗糙度等于第二光学胶层40靠近柔性显示面板10的一侧的表面粗糙度)；也可以是第二光学胶层40靠近超薄玻璃201的一侧的表面粗糙度小于第二光学胶层40靠近柔性显示面板10的一侧的表面粗糙度(即第一光学胶层30靠近超薄玻璃201的一侧的表面粗糙度小于第二光学胶层40靠近柔性显示面板10的一侧的表面粗糙度)。当第二光学胶层40靠近超薄玻璃201的一侧的表面粗糙度小于第二光学胶层40靠近柔性显示面板10的一侧的表面粗糙度时，第二光学胶层40可以在第一光学胶层30的基础上，进一步提高显示模组的表面平整度。\n\n[0027]在一种实施例中，所述第一光学胶层30由液态胶固化形成，所述第二光学胶层40由固态胶形成或由液态胶固化形成。可以理解的是，液态胶具有自流平性能，可填充显示模组表面的不平整，本发明实施例通过将第一光学胶层30采用液态胶(例如OCR胶)固化形成，在液态胶自身的流平作用下，可填平超薄玻璃201上表面的不平整，最后再在第一光学胶层30远离超薄玻璃201的一侧贴上保护盖板202，即可解决显示模组的外观“橘皮”现象。其中，第二光学胶层40既可直接采用固态胶(例如OCA胶)，又可采用液态胶(例如OCR胶)固化形成。当第二光学胶层40采用液态胶固化形成时，可以在第一光学胶层30的基础上，进一步提高显示模组的表面平整度。\n\n[0028]在一种实施例中，所述液态胶为水胶，所述水胶的粘度大于或等于10厘泊且小于或等于30厘泊。\n\n[0029]在一种实施例中，在所述柔性显示面板10至所述复合盖板层20的方向上，所述第一光学胶层30的厚度大于或等于所述第二光学胶层40的厚度，所述第一光学胶层30的厚度大于或等于25微米且小于或等于50微米。可以理解的是，本发明通过将第一光学胶层30的厚度设置为大于或等于第二光学胶层40的厚度，即通过在现有基础上，减薄第二光学胶层40的厚度，以减小因额外设置第一光学胶层30给显示模组整体的厚度带来的影响。本发明通过将第一光学胶层30的厚度设置为大于或等于25微米且小于或等于50微米，例如35微米，可以在不影响显示模组整体的厚度的前提下，获得较小的表面粗糙度。\n\n[0030]在一种实施例中，所述显示模组还包括钢片层50、泡棉层60以及支撑层70；所述钢片层50位于所述柔性显示面板10远离所述复合盖板层20的一侧；所述泡棉层60位于所述钢片层50和所述柔性显示面板10之间；所述支撑层70位于所述泡棉层60和所述柔性显示面板10之间；其中，所述第一光学胶层30靠近所述保护盖板202的一侧的表面粗糙度小于或等于所述泡棉层60靠近所述钢片层50的一侧的表面粗糙度。\n\n[0031]需要说明的是，所述泡棉层60包括发泡泡棉基材601、第一粘胶层602以及第二粘胶层603，所述发泡泡棉基材601通过所述第一粘胶层602与钢片层50粘合，所述发泡泡棉基材601通过所述第二粘胶层603与支撑层70粘合。其中，所述第一粘胶层602和所述第二粘胶层603均为强粘丙烯酸胶粘剂。所述泡棉层60的粘着力强、保持力佳、防紫外线能力强，对于弯曲面、凹凸面的吻合性较好，具有良好的冲击力吸收性，适用于显示模组的缓冲和遮光。\n\n[0032]可以理解的是，所述钢片层50的硬度较高，能保持一个较为平整的表面，因此，所述泡棉层60靠近所述钢片层50的一侧的表面粗糙度相对较小。本发明实施例通过将第一光学胶层30靠近保护盖板202的一侧的表面粗糙度设置为小于或等于泡棉层60靠近钢片层50的一侧的表面粗糙度，可以使显示模组的外观平整度更高，避免产生外观“橘皮”现象。\n\n[0033]在一种实施例中，所述显示模组还包括偏光层80，所述偏光层80位于所述柔性显示面板10和第二光学胶层40之间。\n\n[0034]接下来，请参阅图2，为本发明实施例提供的显示模组的制备方法流程图，所述制备方法包括步骤：\n\n[0035]S1、在柔性显示面板的出光侧制备超薄玻璃；\n\n[0036]S2、在所述超薄玻璃远离所述柔性显示面板的一侧表面制备第一光学胶层，所述第一光学胶层远离所述超薄玻璃的一侧的表面粗糙度小于所述第一光学胶层靠近所述超薄玻璃的一侧的表面粗糙度；\n\n[0037]S3、在所述第一光学胶层远离所述超薄玻璃的一侧表面制备保护盖板，所述保护盖板与所述超薄玻璃构成复合盖板层。\n\n[0038]其中，所述制备第一光学胶层的步骤包括：在所述超薄玻璃远离所述柔性显示面板的一侧表面涂布一层液态胶；对所述液态胶分别进行第一次紫外光固化和第二次紫外光固化。可以理解的是，液态胶具有自流平性能，可填充显示模组表面的不平整，本发明实施例通过将第一光学胶层采用液态胶(例如OCR胶)固化形成，在液态胶自身的流平作用下，可填平超薄玻璃上表面的不平整，最后再在第一光学胶层远离超薄玻璃的一侧贴上保护盖板，即可解决显示模组的外观“橘皮”现象。\n\n[0039]需要说明的是，第一次紫外光固化为预固化，具体是进行点固化，可以滑动开，因此可以返修；第二次紫外光固化为完全固化，可以剥离，但会对器件造成损伤，故而不可以返修。\n\n[0040]在一种实施例中，所述第一次紫外光固化的光源为发光二极管，所述第二次紫外光固化的光源为金属卤素灯。\n\n[0041]接下来，请参阅图3a～图3c，为本发明实施例提供的显示模组的制备工艺流程中各组件的基本结构示意图，首先如图3a所示，在钢片层50的一侧表面贴附泡棉层60，泡棉层60包括发泡泡棉基材601、第一粘胶层602以及第二粘胶层603，发泡泡棉基材601通过第一粘胶层602与钢片层50粘合；然后在柔性显示面板10的一侧制备支撑层70，在柔性显示面板10的另一侧制备偏光层80，将支撑层70与第二粘胶层603粘合；再在偏光层80远离柔性显示面板10的一侧表面制备第二光学胶层40，在第二光学胶层40远离偏光层80的一侧贴附超薄玻璃201；再利用IJP(喷墨打印)设备90打印液态胶31。\n\n[0042]其中，利用IJP设备90打印液态胶31包括步骤：首先将显示模组的表面采用Plasma(等离子)清洁，Plasma清洁指的是射频电源在一定的压力情况下，在真空腔体中产生高能量的无序等离子体，然后将等离子体轰击在被清洗产品的表面，以达到清洗目的。PlasmaN2的流量控制在220～240升/分钟，功率为1千瓦；然后采用IJP设备90涂布一层液态胶31(例如OCR胶)，使用IJP设备90打印时，涂布频率为1～10赫兹，涂布速度为100～120毫米/秒，涂布温度为50摄氏度，Y轴的节距小于10微米，单个液滴的滴下量为0.018毫克，涂布方式为1次扫描，涂布厚度范围为25～50微米。\n\n[0043]接下来，请参阅图3b，由于液态胶31具有流动性，在其自身作用下会流平，得到第一光学胶层30，然后通过UV(紫外光)固化工艺或者热固化工艺将第一光学胶层30定型。\n\n[0044]在一种实施例中，通过UV固化工艺将第一光学胶层30定型。其中，UV固化工艺共分为两步：第一次紫外光固化(预固化)和第二次紫外光固化(完全固化)。其中，预固化的UV灯选用LED(发光二极管)灯，固化波长为365纳米，固化能量选用100～500毫焦/平方厘米，保证液态胶31转变为固态即可；完全固化的UV灯选用金属卤素灯，波长范围为200～400纳米，主波峰为365纳米，固化能量选用5000毫焦/平方厘米，进一步提升第一光学胶层30的粘附力。\n\n[0045]接下来，请参阅图3c，在第一光学胶层30远离超薄玻璃201的一侧表面贴附保护盖板202，所述保护盖板202与所述超薄玻璃201构成复合盖板层20。本发明实施例通过第一光学胶层30的自流平作用，可提高显示模组的表面平整度，改善显示模组的外观“橘皮”现象。\n\n[0046]接下来，请参阅图4a和图4b，分别为现有技术的显示模组的外观示意图和本发明实施例提供的显示模组的外观示意图，现有技术的显示模组未设置第一光学胶层，外观“橘皮”严重；本发明实施例使用IJP设备涂布液态胶流平后的显示模组的外观“橘皮”轻微，即本发明实施例提供的显示模组可以明显改善折叠显示面板的表面不平整。\n\n[0047]具体的，请参阅图5a和图5b，分别为光栅下现有技术的显示模组的外观示意图和本发明实施例提供的显示模组的外观示意图，从图5a和图5b中可以很明显的看出，现有技术的显示模组外观“橘皮”严重；本发明实施例的显示模组的外观“橘皮”轻微，可以进一步确定采用IJP设备涂布液态胶流平可以明显改善折叠显示面板的表面不平整。\n\n[0048]本发明实施例还提供一种显示装置，包括上述的显示模组以及与所述显示模组电性连接的驱动芯片，所述显示模组的基本结构、制备方法及工艺流程请参阅图1至图3c及相关说明，此处不再赘述。本发明实施例提供的显示装置可以为：手机、平板电脑、笔记本电脑、数码相机、导航仪等具有显示功能的产品或部件。\n\n[0049]综上所述，本发明实施例提供的一种显示模组，包括柔性显示面板和复合盖板层；复合盖板层位于柔性显示面板的出光侧，复合盖板层包括超薄玻璃和保护盖板，保护盖板位于超薄玻璃远离柔性显示面板的一侧；其中，保护盖板和超薄玻璃之间设置有第一光学胶层，第一光学胶层靠近保护盖板的一侧的表面粗糙度小于第一光学胶层靠近超薄玻璃的一侧的表面粗糙度；本发明通过在保护盖板和超薄玻璃之间设置第一光学胶层，且第一光学胶层靠近保护盖板的一侧的表面粗糙度小于第一光学胶层靠近超薄玻璃的一侧的表面粗糙度，可改善保护盖板的表面平整度，有效改善显示模组的外观“橘皮”现象，解决了现有技术的显示模组中的各膜层，由于材料自身的不平整以及柔性贴合应力的存在，导致显示模组的表面不平整，人眼可见“橘皮”现象的技术问题。\n\n[0050]以上对本发明实施例所提供的一种显示模组及其制备方法、显示装置进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。', '技术领域\n\n[0001]本发明涉及显示技术领域，尤其涉及一种显示模组及其制备方法、显示装置。\n\n背景技术\n\n[0002]OLED(Organic Light Emitting Diode，有机发光二极管)显示面板因具有柔性可弯曲、自发光、广视角等优点而成为目前市场上的主流显示产品，被誉为继LCD(LiquidCrystal Display，液晶显示器)之后最有发展潜力的显示技术。OLED显示面板的发光功能层采用三明治结构，当两端通入电流后，电子和空穴被注入到有机发光层中，不同的有机发光材料在激子激发下发出不同颜色的光，从而应用于各种显示产品。\n\n[0003]OLED显示面板的一大优势是可以用于制作可折叠显示模组，但是可折叠显示模组有一个很严重的缺点——“橘皮”现象。“橘皮”的本质是显示模组的表面不平整。显示模组的表面不平整的原因是：为了达到可折叠功能，显示模组中的各膜层使用的膜材都比较软、薄，材料的厚度均匀性不一致，而且在Roller(滚轮)的压力作用下，导致显示模组的外观有“橘皮”现象，极大影响用户的使用体验。故，有必要改善这一缺陷。\n\n发明内容\n\n[0004]本发明实施例提供一种显示模组，用于解决现有技术的显示模组中的各膜层，由于材料自身的不平整以及柔性贴合应力的存在，导致显示模组的表面不平整，人眼可见“橘皮”现象的技术问题。\n\n[0005]本发明实施例提供一种显示模组，包括柔性显示面板和复合盖板层；所述复合盖板层位于所述柔性显示面板的出光侧，所述复合盖板层包括超薄玻璃和保护盖板，所述保护盖板位于所述超薄玻璃远离所述柔性显示面板的一侧；其中，所述保护盖板和所述超薄玻璃之间设置有第一光学胶层，所述第一光学胶层靠近所述保护盖板的一侧的表面粗糙度小于所述第一光学胶层靠近所述超薄玻璃的一侧的表面粗糙度。\n\n[0006]在本发明实施例提供的显示模组中，所述超薄玻璃与所述柔性显示面板之间设置有第二光学胶层，所述第一光学胶层靠近所述超薄玻璃的一侧的表面粗糙度小于或等于所述第二光学胶层靠近所述柔性显示面板的一侧的表面粗糙度。\n\n[0007]在本发明实施例提供的显示模组中，所述第一光学胶层由液态胶固化形成，所述第二光学胶层由固态胶形成或由液态胶固化形成。\n\n[0008]在本发明实施例提供的显示模组中，所述液态胶为水胶，所述水胶的粘度大于或等于10厘泊且小于或等于30厘泊。\n\n[0009]在本发明实施例提供的显示模组中，在所述柔性显示面板至所述复合盖板层的方向上，所述第一光学胶层的厚度大于或等于所述第二光学胶层的厚度，所述第一光学胶层的厚度大于或等于25微米且小于或等于50微米。\n\n[0010]在本发明实施例提供的显示模组中，所述显示模组还包括钢片层、泡棉层以及支撑层；所述钢片层位于所述柔性显示面板远离所述复合盖板层的一侧；所述泡棉层位于所述钢片层和所述柔性显示面板之间；所述支撑层位于所述泡棉层和所述柔性显示面板之间；其中，所述第一光学胶层靠近所述保护盖板的一侧的表面粗糙度小于或等于所述泡棉层靠近所述钢片层的一侧的表面粗糙度。\n\n[0011]本发明实施例提供一种显示模组的制备方法，包括步骤：在柔性显示面板的出光侧制备超薄玻璃；在所述超薄玻璃远离所述柔性显示面板的一侧表面制备第一光学胶层，所述第一光学胶层远离所述超薄玻璃的一侧的表面粗糙度小于所述第一光学胶层靠近所述超薄玻璃的一侧的表面粗糙度；在所述第一光学胶层远离所述超薄玻璃的一侧表面制备保护盖板，所述保护盖板与所述超薄玻璃构成复合盖板层。\n\n[0012]在本发明实施例提供的显示模组的制备方法中，所述制备第一光学胶层的步骤包括：在所述超薄玻璃远离所述柔性显示面板的一侧表面涂布一层液态胶；对所述液态胶分别进行第一次紫外光固化和第二次紫外光固化。\n\n[0013]在本发明实施例提供的显示模组的制备方法中，所述第一次紫外光固化的光源为发光二极管，所述第二次紫外光固化的光源为金属卤素灯。\n\n[0014]本发明实施例还提供一种显示装置，包括上述的显示模组以及与所述显示模组电性连接的驱动芯片。\n\n[0015]有益效果：本发明实施例提供的一种显示模组，包括柔性显示面板和复合盖板层；复合盖板层位于柔性显示面板的出光侧，复合盖板层包括超薄玻璃和保护盖板，保护盖板位于超薄玻璃远离柔性显示面板的一侧；其中，保护盖板和超薄玻璃之间设置有第一光学胶层，第一光学胶层靠近保护盖板的一侧的表面粗糙度小于第一光学胶层靠近超薄玻璃的一侧的表面粗糙度；本发明通过在保护盖板和超薄玻璃之间设置第一光学胶层，且第一光学胶层靠近保护盖板的一侧的表面粗糙度小于第一光学胶层靠近超薄玻璃的一侧的表面粗糙度，可改善保护盖板的表面平整度，有效改善显示模组的外观“橘皮”现象。\n\n附图说明\n\n[0016]为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。\n\n[0017]图1是本发明实施例提供的显示模组的基本结构示意图。\n\n[0018]图2是本发明实施例提供的显示模组的制备方法流程图。\n\n[0019]图3a～图3c是本发明实施例提供的显示模组的制备工艺流程中各组件的基本结构示意图。\n\n[0020]图4a和图4b分别是现有技术的显示模组的外观示意图和本发明实施例提供的显示模组的外观示意图。\n\n[0021]图5a和图5b分别是光栅下现有技术的显示模组的外观示意图和本发明实施例提供的显示模组的外观示意图。\n\n具体实施方式\n\n[0022]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。在附图中，为了清晰及便于理解和描述，附图中绘示的组件的尺寸和厚度并未按照比例。\n\n[0023]如图1所示，为本发明实施例提供的显示模组的基本结构示意图，所述显示模组包括柔性显示面板10和复合盖板层20；所述复合盖板层20位于所述柔性显示面板10的出光侧，所述复合盖板层20包括超薄玻璃201和保护盖板202，所述保护盖板202位于所述超薄玻璃201远离所述柔性显示面板10的一侧；其中，所述保护盖板202和所述超薄玻璃201之间设置有第一光学胶层30，所述第一光学胶层30靠近所述保护盖板202的一侧的表面粗糙度小于所述第一光学胶层30靠近所述超薄玻璃201的一侧的表面粗糙度。\n\n[0024]可以理解的是，本发明实施例提供的复合盖板层20由超薄玻璃201和保护盖板202共同构成，其中，超薄玻璃201具有较好的硬度，但其抗冲击性能力不足，当受到强烈冲击时，很容易碎裂。因此，超薄玻璃201不能作为整个显示模组的第一表面(即显示模组外露的一面)，换而言之就是，需要在超薄玻璃201上面设置一层保护盖板202，以弥补其抗冲击性能力的不足。一般而言，保护盖板202可采用CPI(无色聚酰亚胺)或PET(聚对苯二甲酸乙二醇酯)，即可增强超薄玻璃201的抗冲击性能力，同时超薄玻璃201自然而然也成为了上层CPI或PET的硬质衬底，也弥补了CPI或PET太软不耐刮的缺陷。\n\n[0025]需要说明的是，本发明实施例提供的柔性显示面板10具有可折叠性能，而为了提高整个显示模组的可折叠性能，显示模组中的各膜层使用的膜材都比较软、薄，材料的厚度均匀性不一致，而且在Roller(滚轮)柔性贴合的压力作用下，导致显示模组的表面不平整，导致显示模组的外观有“橘皮”现象，极大影响用户的使用体验。在本发明实施例中，保护盖板202作为显示模组的第一表面，本发明实施例通过在保护盖板202和超薄玻璃201之间设置第一光学胶层30，且第一光学胶层30靠近保护盖板202的一侧的表面粗糙度小于第一光学胶层30靠近超薄玻璃201的一侧的表面粗糙度，使得保护盖板202的表面更加平整，有效改善了显示模组的外观“橘皮”现象。\n\n[0026]在一种实施例中，所述超薄玻璃201与所述柔性显示面板10之间设置有第二光学胶层40，所述第一光学胶层30靠近所述超薄玻璃201的一侧的表面粗糙度(即第二光学胶层40靠近超薄玻璃201的一侧的表面粗糙度)小于或等于所述第二光学胶层40靠近所述柔性显示面板10的一侧的表面粗糙度。可以理解的是，柔性显示面板10通过第二光学胶层40与超薄玻璃201贴合，其中，第二光学胶层40靠近超薄玻璃201的一侧的表面粗糙度可以与第二光学胶层40靠近柔性显示面板10的一侧的表面粗糙度相等(即第一光学胶层30靠近超薄玻璃201的一侧的表面粗糙度等于第二光学胶层40靠近柔性显示面板10的一侧的表面粗糙度)；也可以是第二光学胶层40靠近超薄玻璃201的一侧的表面粗糙度小于第二光学胶层40靠近柔性显示面板10的一侧的表面粗糙度(即第一光学胶层30靠近超薄玻璃201的一侧的表面粗糙度小于第二光学胶层40靠近柔性显示面板10的一侧的表面粗糙度)。当第二光学胶层40靠近超薄玻璃201的一侧的表面粗糙度小于第二光学胶层40靠近柔性显示面板10的一侧的表面粗糙度时，第二光学胶层40可以在第一光学胶层30的基础上，进一步提高显示模组的表面平整度。\n\n[0027]在一种实施例中，所述第一光学胶层30由液态胶固化形成，所述第二光学胶层40由固态胶形成或由液态胶固化形成。可以理解的是，液态胶具有自流平性能，可填充显示模组表面的不平整，本发明实施例通过将第一光学胶层30采用液态胶(例如OCR胶)固化形成，在液态胶自身的流平作用下，可填平超薄玻璃201上表面的不平整，最后再在第一光学胶层30远离超薄玻璃201的一侧贴上保护盖板202，即可解决显示模组的外观“橘皮”现象。其中，第二光学胶层40既可直接采用固态胶(例如OCA胶)，又可采用液态胶(例如OCR胶)固化形成。当第二光学胶层40采用液态胶固化形成时，可以在第一光学胶层30的基础上，进一步提高显示模组的表面平整度。\n\n[0028]在一种实施例中，所述液态胶为水胶，所述水胶的粘度大于或等于10厘泊且小于或等于30厘泊。\n\n[0029]在一种实施例中，在所述柔性显示面板10至所述复合盖板层20的方向上，所述第一光学胶层30的厚度大于或等于所述第二光学胶层40的厚度，所述第一光学胶层30的厚度大于或等于25微米且小于或等于50微米。可以理解的是，本发明通过将第一光学胶层30的厚度设置为大于或等于第二光学胶层40的厚度，即通过在现有基础上，减薄第二光学胶层40的厚度，以减小因额外设置第一光学胶层30给显示模组整体的厚度带来的影响。本发明通过将第一光学胶层30的厚度设置为大于或等于25微米且小于或等于50微米，例如35微米，可以在不影响显示模组整体的厚度的前提下，获得较小的表面粗糙度。\n\n[0030]在一种实施例中，所述显示模组还包括钢片层50、泡棉层60以及支撑层70；所述钢片层50位于所述柔性显示面板10远离所述复合盖板层20的一侧；所述泡棉层60位于所述钢片层50和所述柔性显示面板10之间；所述支撑层70位于所述泡棉层60和所述柔性显示面板10之间；其中，所述第一光学胶层30靠近所述保护盖板202的一侧的表面粗糙度小于或等于所述泡棉层60靠近所述钢片层50的一侧的表面粗糙度。\n\n[0031]需要说明的是，所述泡棉层60包括发泡泡棉基材601、第一粘胶层602以及第二粘胶层603，所述发泡泡棉基材601通过所述第一粘胶层602与钢片层50粘合，所述发泡泡棉基材601通过所述第二粘胶层603与支撑层70粘合。其中，所述第一粘胶层602和所述第二粘胶层603均为强粘丙烯酸胶粘剂。所述泡棉层60的粘着力强、保持力佳、防紫外线能力强，对于弯曲面、凹凸面的吻合性较好，具有良好的冲击力吸收性，适用于显示模组的缓冲和遮光。\n\n[0032]可以理解的是，所述钢片层50的硬度较高，能保持一个较为平整的表面，因此，所述泡棉层60靠近所述钢片层50的一侧的表面粗糙度相对较小。本发明实施例通过将第一光学胶层30靠近保护盖板202的一侧的表面粗糙度设置为小于或等于泡棉层60靠近钢片层50的一侧的表面粗糙度，可以使显示模组的外观平整度更高，避免产生外观“橘皮”现象。\n\n[0033]在一种实施例中，所述显示模组还包括偏光层80，所述偏光层80位于所述柔性显示面板10和第二光学胶层40之间。\n\n[0034]接下来，请参阅图2，为本发明实施例提供的显示模组的制备方法流程图，所述制备方法包括步骤：\n\n[0035]S1、在柔性显示面板的出光侧制备超薄玻璃；\n\n[0036]S2、在所述超薄玻璃远离所述柔性显示面板的一侧表面制备第一光学胶层，所述第一光学胶层远离所述超薄玻璃的一侧的表面粗糙度小于所述第一光学胶层靠近所述超薄玻璃的一侧的表面粗糙度；\n\n[0037]S3、在所述第一光学胶层远离所述超薄玻璃的一侧表面制备保护盖板，所述保护盖板与所述超薄玻璃构成复合盖板层。\n\n[0038]其中，所述制备第一光学胶层的步骤包括：在所述超薄玻璃远离所述柔性显示面板的一侧表面涂布一层液态胶；对所述液态胶分别进行第一次紫外光固化和第二次紫外光固化。可以理解的是，液态胶具有自流平性能，可填充显示模组表面的不平整，本发明实施例通过将第一光学胶层采用液态胶(例如OCR胶)固化形成，在液态胶自身的流平作用下，可填平超薄玻璃上表面的不平整，最后再在第一光学胶层远离超薄玻璃的一侧贴上保护盖板，即可解决显示模组的外观“橘皮”现象。\n\n[0039]需要说明的是，第一次紫外光固化为预固化，具体是进行点固化，可以滑动开，因此可以返修；第二次紫外光固化为完全固化，可以剥离，但会对器件造成损伤，故而不可以返修。\n\n[0040]在一种实施例中，所述第一次紫外光固化的光源为发光二极管，所述第二次紫外光固化的光源为金属卤素灯。\n\n[0041]接下来，请参阅图3a～图3c，为本发明实施例提供的显示模组的制备工艺流程中各组件的基本结构示意图，首先如图3a所示，在钢片层50的一侧表面贴附泡棉层60，泡棉层60包括发泡泡棉基材601、第一粘胶层602以及第二粘胶层603，发泡泡棉基材601通过第一粘胶层602与钢片层50粘合；然后在柔性显示面板10的一侧制备支撑层70，在柔性显示面板10的另一侧制备偏光层80，将支撑层70与第二粘胶层603粘合；再在偏光层80远离柔性显示面板10的一侧表面制备第二光学胶层40，在第二光学胶层40远离偏光层80的一侧贴附超薄玻璃201；再利用IJP(喷墨打印)设备90打印液态胶31。\n\n[0042]其中，利用IJP设备90打印液态胶31包括步骤：首先将显示模组的表面采用Plasma(等离子)清洁，Plasma清洁指的是射频电源在一定的压力情况下，在真空腔体中产生高能量的无序等离子体，然后将等离子体轰击在被清洗产品的表面，以达到清洗目的。PlasmaN2的流量控制在220～240升/分钟，功率为1千瓦；然后采用IJP设备90涂布一层液态胶31(例如OCR胶)，使用IJP设备90打印时，涂布频率为1～10赫兹，涂布速度为100～120毫米/秒，涂布温度为50摄氏度，Y轴的节距小于10微米，单个液滴的滴下量为0.018毫克，涂布方式为1次扫描，涂布厚度范围为25～50微米。\n\n[0043]接下来，请参阅图3b，由于液态胶31具有流动性，在其自身作用下会流平，得到第一光学胶层30，然后通过UV(紫外光)固化工艺或者热固化工艺将第一光学胶层30定型。\n\n[0044]在一种实施例中，通过UV固化工艺将第一光学胶层30定型。其中，UV固化工艺共分为两步：第一次紫外光固化(预固化)和第二次紫外光固化(完全固化)。其中，预固化的UV灯选用LED(发光二极管)灯，固化波长为365纳米，固化能量选用100～500毫焦/平方厘米，保证液态胶31转变为固态即可；完全固化的UV灯选用金属卤素灯，波长范围为200～400纳米，主波峰为365纳米，固化能量选用5000毫焦/平方厘米，进一步提升第一光学胶层30的粘附力。\n\n[0045]接下来，请参阅图3c，在第一光学胶层30远离超薄玻璃201的一侧表面贴附保护盖板202，所述保护盖板202与所述超薄玻璃201构成复合盖板层20。本发明实施例通过第一光学胶层30的自流平作用，可提高显示模组的表面平整度，改善显示模组的外观“橘皮”现象。\n\n[0046]接下来，请参阅图4a和图4b，分别为现有技术的显示模组的外观示意图和本发明实施例提供的显示模组的外观示意图，现有技术的显示模组未设置第一光学胶层，外观“橘皮”严重；本发明实施例使用IJP设备涂布液态胶流平后的显示模组的外观“橘皮”轻微，即本发明实施例提供的显示模组可以明显改善折叠显示面板的表面不平整。\n\n[0047]具体的，请参阅图5a和图5b，分别为光栅下现有技术的显示模组的外观示意图和本发明实施例提供的显示模组的外观示意图，从图5a和图5b中可以很明显的看出，现有技术的显示模组外观“橘皮”严重；本发明实施例的显示模组的外观“橘皮”轻微，可以进一步确定采用IJP设备涂布液态胶流平可以明显改善折叠显示面板的表面不平整。\n\n[0048]本发明实施例还提供一种显示装置，包括上述的显示模组以及与所述显示模组电性连接的驱动芯片，所述显示模组的基本结构、制备方法及工艺流程请参阅图1至图3c及相关说明，此处不再赘述。本发明实施例提供的显示装置可以为：手机、平板电脑、笔记本电脑、数码相机、导航仪等具有显示功能的产品或部件。\n\n[0049]综上所述，本发明实施例提供的一种显示模组，包括柔性显示面板和复合盖板层；复合盖板层位于柔性显示面板的出光侧，复合盖板层包括超薄玻璃和保护盖板，保护盖板位于超薄玻璃远离柔性显示面板的一侧；其中，保护盖板和超薄玻璃之间设置有第一光学胶层，第一光学胶层靠近保护盖板的一侧的表面粗糙度小于第一光学胶层靠近超薄玻璃的一侧的表面粗糙度；本发明通过在保护盖板和超薄玻璃之间设置第一光学胶层，且第一光学胶层靠近保护盖板的一侧的表面粗糙度小于第一光学胶层靠近超薄玻璃的一侧的表面粗糙度，可改善保护盖板的表面平整度，有效改善显示模组的外观“橘皮”现象，解决了现有技术的显示模组中的各膜层，由于材料自身的不平整以及柔性贴合应力的存在，导致显示模组的表面不平整，人眼可见“橘皮”现象的技术问题。\n\n[0050]以上对本发明实施例所提供的一种显示模组及其制备方法、显示装置进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。');
INSERT INTO `os_patent_instruction_text` VALUES (10987, 24041, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种发光器件转印方法及发光器件转印系统。\n\n背景技术\n\n[0002]作为新型显示技术的代表，微型发光二极管(microLED)显示因其具有高亮度、高对比度、广色域、响应速度快和高信赖性等优势，受到了业内的广泛关注。然而，microLED技术面临了诸多挑战，其中巨量转移是最为核心的技术之一。目前，巨量转移方法包括静电力、范德华力、激光、流体自组装等方式，主流技术为Stamp转移和激光转移。对于Stamp转移技术，转印头与LED之间的吸引和释放均由范德华力控制。\n\n[0003]在对现有技术的研究和实践过程中，本申请的发明人发现，当同时转移大量的microLED时，由于转印头不可能对每个LED的受力一致，因此会造成部分microLED不能精准置于目标区域而造成转移良率下降。而对于激光转移技术，由于受到光斑大小影响，对于尺寸较小的microLED难以精准转移。\n\n发明内容\n\n[0004]本申请实施例提供一种发光器件转印方法及发光器件转印系统，可以实现微型发光二极管的精准转移。\n\n[0005]本申请实施例提供一种发光器件转印方法，包括：\n\n[0006]提供发光器件和转印装置，所述发光器件上设置有缓冲层，所述转印装置上具有转印探针；\n\n[0007]将所述转印探针嵌入所述缓冲层，所述转印探针与所述缓冲层的摩擦力大于所述发光器件的重力；\n\n[0008]采用所述转印探针拾取所述发光器件；\n\n[0009]将所述发光器件转移至转印基板。\n\n[0010]可选的，在本申请的一些实施例中，所述将所述发光器件转移至转印基板之前，还包括如下步骤：\n\n[0011]在所述转印基板上设置光阻挡膜层；\n\n[0012]采用光刻工艺对所述光阻挡膜层进行图案化处理，以在所述光阻挡膜层上形成多个开口，得到光阻结构层。\n\n[0013]可选的，在本申请的一些实施例中，所述将所述发光器件转移至转印基板，包括如下步骤：\n\n[0014]在所述开口内设置导电胶；\n\n[0015]将所述发光器件转移至所述开口内，所述发光器件通过所述导电胶与所述转印基板连接；\n\n[0016]释放所述发光器件，以使所述发光器件转移至转印基板。\n\n[0017]可选的，在本申请的一些实施例中，所述转印探针与所述缓冲层的摩擦力小于所述发光器件与所述导电胶的界面结合力。\n\n[0018]可选的，在本申请的一些实施例中，所述将所述发光器件转移至转印基板之后，还包括如下步骤：\n\n[0019]去除所述缓冲层；\n\n[0020]对设置有所述发光器件的转印基板进行封装。\n\n[0021]可选的，在本申请的一些实施例中，所述去除所述缓冲层，包括如下步骤：\n\n[0022]对所述缓冲层进行光照；\n\n[0023]利用显影液洗去所述缓冲层。\n\n[0024]可选的，在本申请的一些实施例中，所述将所述转印探针嵌入所述缓冲层，包括：将至少一个转印探针嵌入所述缓冲层。\n\n[0025]相应的，本申请实施例还提供一种发光器件转印系统，所述发光器件转印系统用于将发光器件转印至转印基板，所述转印基板用于接收所述发光器件，其特征在于，所述发光器件上设置有缓冲层，所述发光器件转印系统包括：\n\n[0026]转印装置，所述转印装置上具有转印探针，所述转印探针用于嵌入所述缓冲层，所述转印探针与所述缓冲层之间的摩擦力大于所述发光器件的重力。\n\n[0027]可选的，在本申请的一些实施例中，所述转印基板上设置有光阻结构层，所述光阻结构层上设置有多个开口，所述开口内设置有导电胶，所述转印探针与所述缓冲层之间的摩擦力小于所述发光器件与所述导电胶之间的界面结合力。\n\n[0028]可选的，在本申请的一些实施例中，所述缓冲层的厚度为20微米至100微米。\n\n[0029]本申请实施例公开一种发光器件转印方法及发光器件转印系统。通过在发光器件上增加缓冲层，再利用转印探针嵌入缓冲层拾取发光器件进行转印。由于是将转印探针嵌入发光器件上的缓冲层对发光器件进行转移，因而不存在各个发光器件受力不均的问题。由此，能够将发光器件精准置于目标区域，进而提升发光二极管转移的良率。另外，本申请实施例提供的发光器件转印方法中的转印探针可以选用微纳探针。微纳探针的针体较小，能够对微型发光二极管或迷你发光二极管进行转印。采用微纳探针进行转印，能够避免采用真空吸附的转移探头精度小的情况下吸附力过小难以吸附发光器件的情况，使发光器件在转移过程中保持稳定。\n\n附图说明\n\n[0030]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0031]图1是本申请实施例提供的发光器件转印方法的一种流程示意图；\n\n[0032]图2a至图2f是本申请实施例提供的发光器件转印方法步骤示意图；\n\n[0033]图3是本申请实施例提供的发光器件转印系统的一种结构示意图；\n\n[0034]图4是本申请实施例提供的发光器件转印方法中转印探针嵌入不同发光器件的一种结构示意图。\n\n具体实施方式\n\n[0035]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0036]本申请实施例提供一种发光器件转印方法及发光器件转印系统。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0037]请参阅图1至图2f，图1是本申请实施例提供的发光器件转印方法的一种流程示意图。图2a至图2f是本申请实施例提供的发光器件转印方法步骤示意图。本申请实施例提供的发光器件转印方法，具体包括如下步骤：\n\n[0038]步骤11、提供发光器件103和转印装置105，发光器件103上设置有缓冲层104，转印装置105上具有转印探针1051。\n\n[0039]可选的，发光器件103可设置于一基板上。具体的，基板的上设置有若干发光器件103。其中，该供给基板可以是激光透明基板，例如蓝宝石基板、碳化硅(SiC)基板或玻璃基板，此处不做具体限定。可选的，发光器件103在基板上呈周期性的阵列排布，便于发光器件103的大批量转印。可选的，发光器件103可以为发光二极管(light-emitting diode,LED)、微型发光二极管(micro LED)或者迷你发光二极管(mini LED)。本申请实施例中的发光器件103还可以为其他需要利用转印工艺的发光器件103，本申请对此不作限制。\n\n[0040]其中，缓冲层104可以为光阻材料。光阻材料主要可分为正光阻及负光阻二种，也可称为正性光刻胶和负性光刻胶。正光阻就是被光照射的部份可以被显影液去除掉，而未曝光的光阻则不会被显影液去除。这是因为正光阻本身难溶于显影液，曝光后解离成小分子，形成容易溶于显影液的结构。而负光阻则相反，曝光后形成不容易溶于显影液的结构，被光照射的部份不会被显影液去除，而其余不被光所照射的区域将会被显影液去除。在不进行说明的情况下，本申请采用正光阻形成缓冲层104，但并不限定为本申请的光阻层为正光阻。\n\n[0041]其中，正性光刻胶可以为重氮萘醌类化合物和邻-叠氮醌类化合物。负性光刻胶可以为聚肉桂酸酯类化合物和聚烃类-双叠氮类化合物。\n\n[0042]可选的，采用涂布的方法在发光器件103上制作缓冲层104。涂布的方法包括旋转涂布(下文中简称为旋涂)、狭缝式涂布、静电喷涂等方式。以旋涂为例，具体的，将雾化的缓冲层104材料均匀地喷涂在发光器件103上，然后驱动缓冲层104材料旋转以使发光器件103上的缓冲层104材料形成膜层，待缓冲层104材料分布稳定后停止发光器件103的旋转以得到缓冲层104。采用旋涂的工艺可提高缓冲层104的厚度均匀性，方便在制程中灵活控制缓冲层104的成膜状态，还能方便控制精度。可选的，在旋涂之前增加一步喷涂，可在发光器件103表面形成一层薄的缓冲层104材料液体膜层，提高旋涂时缓冲层104材料在发光器件103表面的流动性，降低电机速度要求，提高旋涂效率，并提高缓冲层104材料的利用率。\n\n[0043]可选的，在旋涂缓冲层104之后，可以对缓冲层104进行热固化。热固化的温度可以选用60℃至120℃。具体的，热固化的温度可以选用60℃、70℃、80℃、90℃、100℃、110℃或120℃。选用60℃至120℃的温度范围能够防止过高的温度对发光器件103造成损害，又能够在短时间内使缓冲层104固化。具体选用的热固化温度可以根据缓冲层104的材料浓度、缓冲层104厚度以及缓冲层104选用的材料进行适应性改动，在此不再赘述。对于采用负性光刻胶的缓冲层104，可以在热固化之后，再用紫外光进行照射，对其进行光固化处理，以使缓冲层104得到更好的固化效果。\n\n[0044]其中，转印探针1051可以为微纳探针。微纳探针的针体为微米级或纳米级，可代替传统的真空吸嘴应用于微型发光二极管的转移，并且能够实现高精度、高良率的微型发光二极管的转移工艺。\n\n[0045]可选的，请参阅图2a，图2a是本申请实施例提供的发光器件转印方法中转印基板的一种结构示意图。转印基板101上设置有光阻结构层102，光阻结构层102上具有多个开口102a。开口102a可以用于容纳发光器件103。并且，光阻结构层102可以用于阻挡发光器件103之间的侧向光串扰。\n\n[0046]步骤12、将转印探针1051嵌入缓冲层104，转印探针1051与缓冲层104的摩擦力大于发光器件103的重力。\n\n[0047]可选的，请参阅图2b，图2b是本申请实施例提供的发光器件转印方法中嵌入转印探针的步骤示意图。将转印探针1051嵌入缓冲层104后，转印探针1051与缓冲层104形成铆钉效应。即，转印探针1051与缓冲层104的摩擦力大于发光器件103的重力。由此，可以利用转印探针1051与缓冲层104之间的纵向摩擦力拾取发光器件103。\n\n[0048]其中，可以在对缓冲层104进行光固化处理时，调节光固化的光照强度和光照时间，调节缓冲层104的性能，进而调节转印探针1051与缓冲层104之间的摩擦力，使转印探针1051与缓冲层104的摩擦力大于发光器件103的重力。\n\n[0049]可选的，在本申请的一些实施例中，将转印探针1051嵌入缓冲层104，包括：将至少一个转印探针1051嵌入缓冲层104。例如，可以对应每个发光器件103嵌入一个转印探针1051，或对应每个发光器件103嵌入多个转印探针1051。当每个发光器件103嵌入多个转印探针1051时，各个发光器件103中嵌入的转印探针1051数量可以相同或者不同。每个发光器件103嵌入多个转印探针1051，能够增大发光器件103与转印探针1051之间的总摩擦力，使拾取更方便。并且，发光器件103与转印探针1051之间的总摩擦力增大之后，在转印过程中能保持发光器件103的稳定性。\n\n[0050]在一些实施例中，可以在转印探针1051上设置由上而下排列的多个凸起。凸起采用热敏材料制作，可用于增大转印探针1051与缓冲层104之间的摩擦力。当转印探针1051嵌入缓冲层104时，可根据需要拾取的发光器件103的重量控制转印探针1051嵌入的深度，并利用凸起进行定位。\n\n[0051]当转印探针1051释放发光器件103时，对转印探针1051进行加热处理，使凸起发生热分解。转印探针1051上的凸起热分解后，转印探针1051与缓冲层104之间产生了空隙。空隙的产生使转印探针1051与缓冲层104之间的摩擦力减小，从而轻易释放发光器件103。\n\n[0052]以凸起由上而下设置有两组为例。当发光器件103的重量较小时，可以以在转印探针1051下方的第一组凸起定位转印探针1051嵌入缓冲层104的深度。同理，当发光器件103的重量较大时，可以以在转印探针1051上方的第二组凸起定位转印探针1051嵌入缓冲层104的深度。\n\n[0053]在转印探针1051上设置热敏材料制作的凸起，一方面能够对不同重量的发光器件103进行摩擦力的调控，另一方面还能够对嵌入的深度进行定位。因此，凸起能够使转印探针1051对发光器件103的拾取更易调控，也能够方便发光器件103的拾取和释放，增大发光器件103转印的准确性。\n\n[0054]步骤13、采用转印探针1051拾取发光器件103。\n\n[0055]具体的，请继续参阅图2b。转印装置105包括摆臂1052和转印探针1051。至少一转印探针1051连接在摆臂1052的至少一端。在一种实施例中，摆臂1052的一端连接多个具有间隔的转印探针1051，摆臂1052的另一端连接控制装置(图中未示出)。通过控制装置控制摆臂1052移动，进而控制转印探针1051嵌入缓冲层104。然后，控制装置控制摆臂1052上升拾取发光器件103。\n\n[0056]步骤14、将发光器件103转移至转印基板101。\n\n[0057]可选的，请参阅图2b和图2c。图2c是本申请实施例提供的发光器件转印方法中将发光器件转移至转印基板的步骤示意图。其中，可以采用控制装置控制摆臂1052移动或转动，使转印探针1051带动发光器件103至转印基板101。\n\n[0058]需要说明的是，在一些实施例中，可以对发光器件103进行批量转印。如上所述，发光器件103周期性呈阵列排布于一基板上。在基板上，可以将发光器件103摆放为所需要的排布顺序和排布图案，转印时，可以直接用摆臂1052连接多个转印探针1051，使转印探针1051一一对应嵌入各个发光器件103中，再全部或部分转移至转印基板101。\n\n[0059]其中，将发光器件103转移至转印基板101之后，还可以对发光器件103进行固晶处理。\n\n[0060]可选的，在本申请的一些实施例中，将发光器件103转移至转印基板101之前，还包括如下步骤：\n\n[0061]步骤141、在转印基板101上设置光阻挡膜层。\n\n[0062]可选的，光阻挡膜层可以采用黑色吸光材料进行制作。具体的，可以采用沉积或涂布的方法制作光阻挡膜层。沉积的方法包括物理气相沉积法(Physical VaporDeposition,PVD)、化学气相沉积法(Chemical Vapor Deposition,CVD)和等离子体化学气相沉积法(Plasma Chemical Vapor Deposition,PCVD)。\n\n[0063]以旋涂为例，具体的，将雾化的光阻挡材料均匀地喷涂在转印基板101上，然后驱动光阻挡材料旋转以使转印基板101上的光阻挡材料形成膜层，待光阻挡材料分布稳定后停止转印基板101的旋转以得到光阻挡膜层。采用旋涂的工艺可提高光阻挡膜层的厚度均匀性，方便在制程中灵活控制光阻挡膜层的成膜状态，还能方便控制精度。可选的，在旋涂之前增加一步喷涂，可在转印基板101表面形成一层薄的光阻挡液体膜层，提高旋涂时光阻挡材料在转印基板101表面的流动性，降低电机速度要求，提高旋涂效率，并提高光阻挡材料的利用率。\n\n[0064]步骤142、采用光刻工艺对光阻挡膜层进行图案化处理，以在光阻挡膜层上形成多个开口102a，得到光阻结构层102。\n\n[0065]具体的，在光阻挡膜层上设置光阻层，并在光阻层上设置预设图案的掩模板。然后对未被掩模板覆盖的光阻层进行曝光处理。移除掩模板，并对光阻层进行显影处理，去除曝光部分的光阻层，以在光阻层上形成通孔。然后对光阻挡膜层进行刻蚀处理，去除与通孔对应的光阻挡膜层，以在光阻挡膜层上形成多个开口102a。然后去除光阻层，得到光阻结构层102。\n\n[0066]可选的，在本申请的一些实施例中，将发光器件103转移至转印基板101，包括如下步骤：\n\n[0067]步骤14A、在开口102a内设置导电胶108。\n\n[0068]需要说明的是，转印基板101包括薄膜晶体管器件及其他走线，用于控制发光器件103的发光。因此，需要在开口102a内设置导电胶108，采用导电胶108连接发光器件103与转印基板101内的器件和走线，以实现对发光器件103发光的控制。\n\n[0069]可选的，导电胶108为各向异性导电胶108(Anisotropic Conductive Film,ACF)。\n\n[0070]步骤14B、将发光器件103转移至开口102a内，发光器件103通过导电胶108与转印基板101连接。\n\n[0071]可选的，采用热压的方法将发光器件103通过导电胶108连接到转印基板101上。具体的，使用各向异性导电胶108将发光器件103与转印基板101的开口102a处互连，然后对齐加压加热形成部件之间稳定可靠的机械、电气连接。根据其过程特点，称之为热压焊或热压。\n\n[0072]步骤14C、释放发光器件103，以使发光器件103转移至转印基板101。\n\n[0073]可选的，在本申请的一些实施例中，转印探针1051与缓冲层104的摩擦力小于发光器件103与导电胶108的界面结合力。\n\n[0074]如上所述，转印探针1051与缓冲层104的摩擦力大于发光器件103的重力，因此，可以使用嵌入转印探针1051的方法拾取发光器件103。同理，转印探针1051与缓冲层104的摩擦力小于发光器件103与导电胶108的界面结合力，则可以利用发光器件103与导电胶108的界面结合力释放发光器件103，以使发光器件103转移至转印基板101。\n\n[0075]其中，可以在对缓冲层104进行光固化处理时，调节光固化的光照强度和光照时间，调节缓冲层104的性能，进而调节转印探针1051与缓冲层104之间的摩擦力，使转印探针1051与缓冲层104的摩擦力小于发光器件103与导电胶108的界面结合力。\n\n[0076]可选的，在本申请的一些实施例中，将发光器件103转移至转印基板101之后，还包括如下步骤：\n\n[0077]步骤14a、去除缓冲层104。\n\n[0078]具体的，请参阅图2d，图2d是本申请实施例提供的发光器件转印方法中去除缓冲层的步骤示意图。可选的，在本申请的一些实施例中，去除缓冲层104，包括如下步骤：\n\n[0079]步骤Ⅰ、对缓冲层104进行光照。\n\n[0080]如上所述，缓冲层104可以采用正性光刻胶制作。正光阻就是被光照射的部份可以被显影液去除掉，而未曝光的光阻则不会被显影液去除。因此，利用正光阻的见光分解特性，可以对其光照使缓冲层104材料分解为小分子，便于去除。\n\n[0081]步骤Ⅱ、利用显影液洗去缓冲层104。\n\n[0082]其中，显影处理是指用化学显影液溶解光刻胶由曝光造成的可溶解区域。化学显影液可以采用四甲基氢氧化铵(Tetramethylammonium Hydroxide,TMAH)、乙酸正丁酯(n-Butyl Acetate,nBA)和甲苯中的一种或多种的组合。显影液也可以采用其他可溶解曝光后光阻材料的溶剂，例如氢氧化钾(KOH)或四甲基氢氧化铵(TMAH)。\n\n[0083]步骤14b、对设置有发光器件103的转印基板101进行封装。\n\n[0084]具体的，请参阅图2e，图2e是本申请实施例提供的发光器件转印方法中封装的步骤示意图。对设置有发光器件103的转印基板101贴合玻璃盖板，并进行封装，以得到封装层106。对转印基板101进行封装的步骤为本领域技术人员所熟知的技术手段，在此不再赘述。\n\n[0085]可选的，请参阅图2f，图2f是本申请实施例提供的发光器件转印方法中绑定的步骤示意图。在对设置有发光器件103的转印基板101进行封装之后，还可以在转印基板101进行绑定部107的绑定。其中，绑定部107可以为覆晶薄膜(Chip On Film,COF)和/或印制电路板(Printed Circuit Board,PCB)。\n\n[0086]本申请提供的发光器件转印方法，在发光器件上增加缓冲层，再利用转印探针嵌入缓冲层拾取发光器件进行转印。由于是将转印探针嵌入发光器件上的缓冲层对发光器件进行转移，因而不存在各个发光器件受力不均的问题。由此，能够将发光器件精准置于目标区域，进而提升发光二极管转移的良率。另外，本申请实施例提供的发光器件转印方法中的转印探针可以选用微纳探针。微纳探针的针体较小，能够对微型发光二极管或迷你发光二极管进行转印。采用微纳探针进行转印，能够避免采用真空吸附的转移探头精度小的情况下吸附力过小难以吸附发光器件的情况，使发光器件在转移过程中保持稳定。\n\n[0087]相应的，本申请实施例还提供一种发光器件转印系统。请参阅图3，图3是本申请实施例提供的发光器件转印系统的一种结构示意图。发光器件转印系统10用于将发光器件103转印至转印基板101。转印基板101用于接收发光器件103。发光器件103上设置有缓冲层104。发光器件转印系统10包括转印装置105。转印装置105上具有转印探针1051。转印探针1051用于嵌入缓冲层104。转印探针1051与缓冲层104之间的摩擦力大于发光器件103的重力。\n\n[0088]可选的，转印装置105包括摆臂1052和转印探针1051。至少一转印探针1051连接在摆臂1052的至少一端。在一种实施例中，摆臂1052的一端连接多个具有间隔的转印探针1051，摆臂1052的另一端连接控制装置(图中未示出)。通过控制装置控制摆臂1052移动，进而控制转印探针1051嵌入缓冲层104。然后，控制装置控制摆臂1052上升拾取发光器件103。需要说明的是，摆臂1052是一种控制转印探针1051运动的方法，当然还可以采用其他机械部件对转印探针1051进行控制，例如采用机械手抓取转印探针1051，本申请对此不作限制。\n\n[0089]可选的，在本申请的一些实施例中，转印基板101上设置有光阻结构层102。光阻结构层102上设置有多个开口102a。开口102a内设置有导电胶108。转印探针1051与缓冲层104之间的摩擦力小于发光器件103与导电胶108之间的界面结合力。\n\n[0090]如上所述，转印探针1051与缓冲层104的摩擦力大于发光器件103的重力，因此，可以使用嵌入转印探针1051的方法拾取发光器件103。同理，转印探针1051与缓冲层104的摩擦力小于发光器件103与导电胶108的界面结合力，则可以利用发光器件103与导电胶108的界面结合力释放发光器件103，以使发光器件103转移至转印基板101。\n\n[0091]可选的，请参阅图4，图4是本申请实施例提供的发光器件转印方法中转印探针嵌入不同发光器件的一种结构示意图。在一些实施例中，在转印探针1051上还设置有由上而下排列的多个凸起109。凸起109采用热敏材料制作，可用于增大转印探针1051与缓冲层104之间的摩擦力。当转印探针1051嵌入缓冲层104时，可根据需要拾取的发光器件103的重量控制转印探针1051嵌入的深度，并利用凸起109进行定位。\n\n[0092]当转印探针1051释放发光器件103时，对转印探针1051进行加热处理，使凸起109发生热分解。转印探针1051上的凸起109热分解后，转印探针1051与缓冲层104之间产生了空隙。空隙的产生使转印探针1051与缓冲层104之间的摩擦力减小，从而轻易释放发光器件103。\n\n[0093]图4所示的转印探针1051中，以凸起109由上而下设置有两组为例进行示意，但本申请中不限制凸起109的数量。另外，图4中以凸起109为设置在转印探针1051左右两边的颗粒为例进行说明，凸起109还可以是围绕转印探针1051一圈的凸出部，本申请对凸起109的形状、凸起的颗粒数量也不做限制。当发光器件103的重量较小时，可以以第一组凸起1091定位转印探针1051嵌入缓冲层104的深度。同理，当发光器件103的重量较大时，可以以第二组凸起1092定位转印探针1051嵌入缓冲层104的深度。\n\n[0094]在转印探针1051上设置热敏材料制作的凸起109，一方面能够对不同重量的发光器件103进行摩擦力的调控，另一方面还能够对嵌入的深度进行定位。因此，凸起109能够使转印探针1051对发光器件103的拾取更易调控，也能够方便发光器件103的拾取和释放，增大发光器件103转印的准确性。\n\n[0095]可选的，在本申请的一些实施例中，缓冲层104的厚度为20微米至100微米。具体的，缓冲层104的厚度可以为20微米、30微米、40微米、50微米、60微米、70微米、80微米、90微米或100微米。缓冲层104的厚度小于20微米，则容易使转印探针1051刺穿缓冲层104，损坏发光器件103。若缓冲层104的厚度大于100微米，则转印探针1051与缓冲层104之间易产生较大的摩擦力，使发光器件103不易释放。\n\n[0096]本申请实施例提供的发光器件转印系统10包括多个发光器件103、转印装置105以及转印基板101。在发光器件103上增加缓冲层104，发光器件转印系统10利用转印探针1051嵌入缓冲层104拾取发光器件103进行转印。由于是将转印探针1051嵌入发光器件103上的缓冲层104对发光器件103进行转移，因而不存在各个发光器件103受力不均的问题。由此，能够将发光器件103精准置于目标区域，进而提升发光器件103转移的良率。另外，本申请实施例提供的发光器件转印系统10中的转印探针1051可以选用微纳探针。微纳探针的针体较小，能够对微型发光二极管或迷你发光二极管进行转印。采用微纳探针进行转印，能够避免采用真空吸附的转移探头精度小的情况下吸附力过小难以吸附发光器件103的情况，使发光器件103在转移过程中保持稳定。\n\n[0097]以上对本申请实施例所提供的一种发光器件转印方法及发光器件转印系统进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种发光器件转印方法及发光器件转印系统。\n\n背景技术\n\n[0002]作为新型显示技术的代表，微型发光二极管(microLED)显示因其具有高亮度、高对比度、广色域、响应速度快和高信赖性等优势，受到了业内的广泛关注。然而，microLED技术面临了诸多挑战，其中巨量转移是最为核心的技术之一。目前，巨量转移方法包括静电力、范德华力、激光、流体自组装等方式，主流技术为Stamp转移和激光转移。对于Stamp转移技术，转印头与LED之间的吸引和释放均由范德华力控制。\n\n[0003]在对现有技术的研究和实践过程中，本申请的发明人发现，当同时转移大量的microLED时，由于转印头不可能对每个LED的受力一致，因此会造成部分microLED不能精准置于目标区域而造成转移良率下降。而对于激光转移技术，由于受到光斑大小影响，对于尺寸较小的microLED难以精准转移。\n\n发明内容\n\n[0004]本申请实施例提供一种发光器件转印方法及发光器件转印系统，可以实现微型发光二极管的精准转移。\n\n[0005]本申请实施例提供一种发光器件转印方法，包括：\n\n[0006]提供发光器件和转印装置，所述发光器件上设置有缓冲层，所述转印装置上具有转印探针；\n\n[0007]将所述转印探针嵌入所述缓冲层，所述转印探针与所述缓冲层的摩擦力大于所述发光器件的重力；\n\n[0008]采用所述转印探针拾取所述发光器件；\n\n[0009]将所述发光器件转移至转印基板。\n\n[0010]可选的，在本申请的一些实施例中，所述将所述发光器件转移至转印基板之前，还包括如下步骤：\n\n[0011]在所述转印基板上设置光阻挡膜层；\n\n[0012]采用光刻工艺对所述光阻挡膜层进行图案化处理，以在所述光阻挡膜层上形成多个开口，得到光阻结构层。\n\n[0013]可选的，在本申请的一些实施例中，所述将所述发光器件转移至转印基板，包括如下步骤：\n\n[0014]在所述开口内设置导电胶；\n\n[0015]将所述发光器件转移至所述开口内，所述发光器件通过所述导电胶与所述转印基板连接；\n\n[0016]释放所述发光器件，以使所述发光器件转移至转印基板。\n\n[0017]可选的，在本申请的一些实施例中，所述转印探针与所述缓冲层的摩擦力小于所述发光器件与所述导电胶的界面结合力。\n\n[0018]可选的，在本申请的一些实施例中，所述将所述发光器件转移至转印基板之后，还包括如下步骤：\n\n[0019]去除所述缓冲层；\n\n[0020]对设置有所述发光器件的转印基板进行封装。\n\n[0021]可选的，在本申请的一些实施例中，所述去除所述缓冲层，包括如下步骤：\n\n[0022]对所述缓冲层进行光照；\n\n[0023]利用显影液洗去所述缓冲层。\n\n[0024]可选的，在本申请的一些实施例中，所述将所述转印探针嵌入所述缓冲层，包括：将至少一个转印探针嵌入所述缓冲层。\n\n[0025]相应的，本申请实施例还提供一种发光器件转印系统，所述发光器件转印系统用于将发光器件转印至转印基板，所述转印基板用于接收所述发光器件，其特征在于，所述发光器件上设置有缓冲层，所述发光器件转印系统包括：\n\n[0026]转印装置，所述转印装置上具有转印探针，所述转印探针用于嵌入所述缓冲层，所述转印探针与所述缓冲层之间的摩擦力大于所述发光器件的重力。\n\n[0027]可选的，在本申请的一些实施例中，所述转印基板上设置有光阻结构层，所述光阻结构层上设置有多个开口，所述开口内设置有导电胶，所述转印探针与所述缓冲层之间的摩擦力小于所述发光器件与所述导电胶之间的界面结合力。\n\n[0028]可选的，在本申请的一些实施例中，所述缓冲层的厚度为20微米至100微米。\n\n[0029]本申请实施例公开一种发光器件转印方法及发光器件转印系统。通过在发光器件上增加缓冲层，再利用转印探针嵌入缓冲层拾取发光器件进行转印。由于是将转印探针嵌入发光器件上的缓冲层对发光器件进行转移，因而不存在各个发光器件受力不均的问题。由此，能够将发光器件精准置于目标区域，进而提升发光二极管转移的良率。另外，本申请实施例提供的发光器件转印方法中的转印探针可以选用微纳探针。微纳探针的针体较小，能够对微型发光二极管或迷你发光二极管进行转印。采用微纳探针进行转印，能够避免采用真空吸附的转移探头精度小的情况下吸附力过小难以吸附发光器件的情况，使发光器件在转移过程中保持稳定。\n\n附图说明\n\n[0030]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0031]图1是本申请实施例提供的发光器件转印方法的一种流程示意图；\n\n[0032]图2a至图2f是本申请实施例提供的发光器件转印方法步骤示意图；\n\n[0033]图3是本申请实施例提供的发光器件转印系统的一种结构示意图；\n\n[0034]图4是本申请实施例提供的发光器件转印方法中转印探针嵌入不同发光器件的一种结构示意图。\n\n具体实施方式\n\n[0035]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0036]本申请实施例提供一种发光器件转印方法及发光器件转印系统。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0037]请参阅图1至图2f，图1是本申请实施例提供的发光器件转印方法的一种流程示意图。图2a至图2f是本申请实施例提供的发光器件转印方法步骤示意图。本申请实施例提供的发光器件转印方法，具体包括如下步骤：\n\n[0038]步骤11、提供发光器件103和转印装置105，发光器件103上设置有缓冲层104，转印装置105上具有转印探针1051。\n\n[0039]可选的，发光器件103可设置于一基板上。具体的，基板的上设置有若干发光器件103。其中，该供给基板可以是激光透明基板，例如蓝宝石基板、碳化硅(SiC)基板或玻璃基板，此处不做具体限定。可选的，发光器件103在基板上呈周期性的阵列排布，便于发光器件103的大批量转印。可选的，发光器件103可以为发光二极管(light-emitting diode,LED)、微型发光二极管(micro LED)或者迷你发光二极管(mini LED)。本申请实施例中的发光器件103还可以为其他需要利用转印工艺的发光器件103，本申请对此不作限制。\n\n[0040]其中，缓冲层104可以为光阻材料。光阻材料主要可分为正光阻及负光阻二种，也可称为正性光刻胶和负性光刻胶。正光阻就是被光照射的部份可以被显影液去除掉，而未曝光的光阻则不会被显影液去除。这是因为正光阻本身难溶于显影液，曝光后解离成小分子，形成容易溶于显影液的结构。而负光阻则相反，曝光后形成不容易溶于显影液的结构，被光照射的部份不会被显影液去除，而其余不被光所照射的区域将会被显影液去除。在不进行说明的情况下，本申请采用正光阻形成缓冲层104，但并不限定为本申请的光阻层为正光阻。\n\n[0041]其中，正性光刻胶可以为重氮萘醌类化合物和邻-叠氮醌类化合物。负性光刻胶可以为聚肉桂酸酯类化合物和聚烃类-双叠氮类化合物。\n\n[0042]可选的，采用涂布的方法在发光器件103上制作缓冲层104。涂布的方法包括旋转涂布(下文中简称为旋涂)、狭缝式涂布、静电喷涂等方式。以旋涂为例，具体的，将雾化的缓冲层104材料均匀地喷涂在发光器件103上，然后驱动缓冲层104材料旋转以使发光器件103上的缓冲层104材料形成膜层，待缓冲层104材料分布稳定后停止发光器件103的旋转以得到缓冲层104。采用旋涂的工艺可提高缓冲层104的厚度均匀性，方便在制程中灵活控制缓冲层104的成膜状态，还能方便控制精度。可选的，在旋涂之前增加一步喷涂，可在发光器件103表面形成一层薄的缓冲层104材料液体膜层，提高旋涂时缓冲层104材料在发光器件103表面的流动性，降低电机速度要求，提高旋涂效率，并提高缓冲层104材料的利用率。\n\n[0043]可选的，在旋涂缓冲层104之后，可以对缓冲层104进行热固化。热固化的温度可以选用60℃至120℃。具体的，热固化的温度可以选用60℃、70℃、80℃、90℃、100℃、110℃或120℃。选用60℃至120℃的温度范围能够防止过高的温度对发光器件103造成损害，又能够在短时间内使缓冲层104固化。具体选用的热固化温度可以根据缓冲层104的材料浓度、缓冲层104厚度以及缓冲层104选用的材料进行适应性改动，在此不再赘述。对于采用负性光刻胶的缓冲层104，可以在热固化之后，再用紫外光进行照射，对其进行光固化处理，以使缓冲层104得到更好的固化效果。\n\n[0044]其中，转印探针1051可以为微纳探针。微纳探针的针体为微米级或纳米级，可代替传统的真空吸嘴应用于微型发光二极管的转移，并且能够实现高精度、高良率的微型发光二极管的转移工艺。\n\n[0045]可选的，请参阅图2a，图2a是本申请实施例提供的发光器件转印方法中转印基板的一种结构示意图。转印基板101上设置有光阻结构层102，光阻结构层102上具有多个开口102a。开口102a可以用于容纳发光器件103。并且，光阻结构层102可以用于阻挡发光器件103之间的侧向光串扰。\n\n[0046]步骤12、将转印探针1051嵌入缓冲层104，转印探针1051与缓冲层104的摩擦力大于发光器件103的重力。\n\n[0047]可选的，请参阅图2b，图2b是本申请实施例提供的发光器件转印方法中嵌入转印探针的步骤示意图。将转印探针1051嵌入缓冲层104后，转印探针1051与缓冲层104形成铆钉效应。即，转印探针1051与缓冲层104的摩擦力大于发光器件103的重力。由此，可以利用转印探针1051与缓冲层104之间的纵向摩擦力拾取发光器件103。\n\n[0048]其中，可以在对缓冲层104进行光固化处理时，调节光固化的光照强度和光照时间，调节缓冲层104的性能，进而调节转印探针1051与缓冲层104之间的摩擦力，使转印探针1051与缓冲层104的摩擦力大于发光器件103的重力。\n\n[0049]可选的，在本申请的一些实施例中，将转印探针1051嵌入缓冲层104，包括：将至少一个转印探针1051嵌入缓冲层104。例如，可以对应每个发光器件103嵌入一个转印探针1051，或对应每个发光器件103嵌入多个转印探针1051。当每个发光器件103嵌入多个转印探针1051时，各个发光器件103中嵌入的转印探针1051数量可以相同或者不同。每个发光器件103嵌入多个转印探针1051，能够增大发光器件103与转印探针1051之间的总摩擦力，使拾取更方便。并且，发光器件103与转印探针1051之间的总摩擦力增大之后，在转印过程中能保持发光器件103的稳定性。\n\n[0050]在一些实施例中，可以在转印探针1051上设置由上而下排列的多个凸起。凸起采用热敏材料制作，可用于增大转印探针1051与缓冲层104之间的摩擦力。当转印探针1051嵌入缓冲层104时，可根据需要拾取的发光器件103的重量控制转印探针1051嵌入的深度，并利用凸起进行定位。\n\n[0051]当转印探针1051释放发光器件103时，对转印探针1051进行加热处理，使凸起发生热分解。转印探针1051上的凸起热分解后，转印探针1051与缓冲层104之间产生了空隙。空隙的产生使转印探针1051与缓冲层104之间的摩擦力减小，从而轻易释放发光器件103。\n\n[0052]以凸起由上而下设置有两组为例。当发光器件103的重量较小时，可以以在转印探针1051下方的第一组凸起定位转印探针1051嵌入缓冲层104的深度。同理，当发光器件103的重量较大时，可以以在转印探针1051上方的第二组凸起定位转印探针1051嵌入缓冲层104的深度。\n\n[0053]在转印探针1051上设置热敏材料制作的凸起，一方面能够对不同重量的发光器件103进行摩擦力的调控，另一方面还能够对嵌入的深度进行定位。因此，凸起能够使转印探针1051对发光器件103的拾取更易调控，也能够方便发光器件103的拾取和释放，增大发光器件103转印的准确性。\n\n[0054]步骤13、采用转印探针1051拾取发光器件103。\n\n[0055]具体的，请继续参阅图2b。转印装置105包括摆臂1052和转印探针1051。至少一转印探针1051连接在摆臂1052的至少一端。在一种实施例中，摆臂1052的一端连接多个具有间隔的转印探针1051，摆臂1052的另一端连接控制装置(图中未示出)。通过控制装置控制摆臂1052移动，进而控制转印探针1051嵌入缓冲层104。然后，控制装置控制摆臂1052上升拾取发光器件103。\n\n[0056]步骤14、将发光器件103转移至转印基板101。\n\n[0057]可选的，请参阅图2b和图2c。图2c是本申请实施例提供的发光器件转印方法中将发光器件转移至转印基板的步骤示意图。其中，可以采用控制装置控制摆臂1052移动或转动，使转印探针1051带动发光器件103至转印基板101。\n\n[0058]需要说明的是，在一些实施例中，可以对发光器件103进行批量转印。如上所述，发光器件103周期性呈阵列排布于一基板上。在基板上，可以将发光器件103摆放为所需要的排布顺序和排布图案，转印时，可以直接用摆臂1052连接多个转印探针1051，使转印探针1051一一对应嵌入各个发光器件103中，再全部或部分转移至转印基板101。\n\n[0059]其中，将发光器件103转移至转印基板101之后，还可以对发光器件103进行固晶处理。\n\n[0060]可选的，在本申请的一些实施例中，将发光器件103转移至转印基板101之前，还包括如下步骤：\n\n[0061]步骤141、在转印基板101上设置光阻挡膜层。\n\n[0062]可选的，光阻挡膜层可以采用黑色吸光材料进行制作。具体的，可以采用沉积或涂布的方法制作光阻挡膜层。沉积的方法包括物理气相沉积法(Physical VaporDeposition,PVD)、化学气相沉积法(Chemical Vapor Deposition,CVD)和等离子体化学气相沉积法(Plasma Chemical Vapor Deposition,PCVD)。\n\n[0063]以旋涂为例，具体的，将雾化的光阻挡材料均匀地喷涂在转印基板101上，然后驱动光阻挡材料旋转以使转印基板101上的光阻挡材料形成膜层，待光阻挡材料分布稳定后停止转印基板101的旋转以得到光阻挡膜层。采用旋涂的工艺可提高光阻挡膜层的厚度均匀性，方便在制程中灵活控制光阻挡膜层的成膜状态，还能方便控制精度。可选的，在旋涂之前增加一步喷涂，可在转印基板101表面形成一层薄的光阻挡液体膜层，提高旋涂时光阻挡材料在转印基板101表面的流动性，降低电机速度要求，提高旋涂效率，并提高光阻挡材料的利用率。\n\n[0064]步骤142、采用光刻工艺对光阻挡膜层进行图案化处理，以在光阻挡膜层上形成多个开口102a，得到光阻结构层102。\n\n[0065]具体的，在光阻挡膜层上设置光阻层，并在光阻层上设置预设图案的掩模板。然后对未被掩模板覆盖的光阻层进行曝光处理。移除掩模板，并对光阻层进行显影处理，去除曝光部分的光阻层，以在光阻层上形成通孔。然后对光阻挡膜层进行刻蚀处理，去除与通孔对应的光阻挡膜层，以在光阻挡膜层上形成多个开口102a。然后去除光阻层，得到光阻结构层102。\n\n[0066]可选的，在本申请的一些实施例中，将发光器件103转移至转印基板101，包括如下步骤：\n\n[0067]步骤14A、在开口102a内设置导电胶108。\n\n[0068]需要说明的是，转印基板101包括薄膜晶体管器件及其他走线，用于控制发光器件103的发光。因此，需要在开口102a内设置导电胶108，采用导电胶108连接发光器件103与转印基板101内的器件和走线，以实现对发光器件103发光的控制。\n\n[0069]可选的，导电胶108为各向异性导电胶108(Anisotropic Conductive Film,ACF)。\n\n[0070]步骤14B、将发光器件103转移至开口102a内，发光器件103通过导电胶108与转印基板101连接。\n\n[0071]可选的，采用热压的方法将发光器件103通过导电胶108连接到转印基板101上。具体的，使用各向异性导电胶108将发光器件103与转印基板101的开口102a处互连，然后对齐加压加热形成部件之间稳定可靠的机械、电气连接。根据其过程特点，称之为热压焊或热压。\n\n[0072]步骤14C、释放发光器件103，以使发光器件103转移至转印基板101。\n\n[0073]可选的，在本申请的一些实施例中，转印探针1051与缓冲层104的摩擦力小于发光器件103与导电胶108的界面结合力。\n\n[0074]如上所述，转印探针1051与缓冲层104的摩擦力大于发光器件103的重力，因此，可以使用嵌入转印探针1051的方法拾取发光器件103。同理，转印探针1051与缓冲层104的摩擦力小于发光器件103与导电胶108的界面结合力，则可以利用发光器件103与导电胶108的界面结合力释放发光器件103，以使发光器件103转移至转印基板101。\n\n[0075]其中，可以在对缓冲层104进行光固化处理时，调节光固化的光照强度和光照时间，调节缓冲层104的性能，进而调节转印探针1051与缓冲层104之间的摩擦力，使转印探针1051与缓冲层104的摩擦力小于发光器件103与导电胶108的界面结合力。\n\n[0076]可选的，在本申请的一些实施例中，将发光器件103转移至转印基板101之后，还包括如下步骤：\n\n[0077]步骤14a、去除缓冲层104。\n\n[0078]具体的，请参阅图2d，图2d是本申请实施例提供的发光器件转印方法中去除缓冲层的步骤示意图。可选的，在本申请的一些实施例中，去除缓冲层104，包括如下步骤：\n\n[0079]步骤Ⅰ、对缓冲层104进行光照。\n\n[0080]如上所述，缓冲层104可以采用正性光刻胶制作。正光阻就是被光照射的部份可以被显影液去除掉，而未曝光的光阻则不会被显影液去除。因此，利用正光阻的见光分解特性，可以对其光照使缓冲层104材料分解为小分子，便于去除。\n\n[0081]步骤Ⅱ、利用显影液洗去缓冲层104。\n\n[0082]其中，显影处理是指用化学显影液溶解光刻胶由曝光造成的可溶解区域。化学显影液可以采用四甲基氢氧化铵(Tetramethylammonium Hydroxide,TMAH)、乙酸正丁酯(n-Butyl Acetate,nBA)和甲苯中的一种或多种的组合。显影液也可以采用其他可溶解曝光后光阻材料的溶剂，例如氢氧化钾(KOH)或四甲基氢氧化铵(TMAH)。\n\n[0083]步骤14b、对设置有发光器件103的转印基板101进行封装。\n\n[0084]具体的，请参阅图2e，图2e是本申请实施例提供的发光器件转印方法中封装的步骤示意图。对设置有发光器件103的转印基板101贴合玻璃盖板，并进行封装，以得到封装层106。对转印基板101进行封装的步骤为本领域技术人员所熟知的技术手段，在此不再赘述。\n\n[0085]可选的，请参阅图2f，图2f是本申请实施例提供的发光器件转印方法中绑定的步骤示意图。在对设置有发光器件103的转印基板101进行封装之后，还可以在转印基板101进行绑定部107的绑定。其中，绑定部107可以为覆晶薄膜(Chip On Film,COF)和/或印制电路板(Printed Circuit Board,PCB)。\n\n[0086]本申请提供的发光器件转印方法，在发光器件上增加缓冲层，再利用转印探针嵌入缓冲层拾取发光器件进行转印。由于是将转印探针嵌入发光器件上的缓冲层对发光器件进行转移，因而不存在各个发光器件受力不均的问题。由此，能够将发光器件精准置于目标区域，进而提升发光二极管转移的良率。另外，本申请实施例提供的发光器件转印方法中的转印探针可以选用微纳探针。微纳探针的针体较小，能够对微型发光二极管或迷你发光二极管进行转印。采用微纳探针进行转印，能够避免采用真空吸附的转移探头精度小的情况下吸附力过小难以吸附发光器件的情况，使发光器件在转移过程中保持稳定。\n\n[0087]相应的，本申请实施例还提供一种发光器件转印系统。请参阅图3，图3是本申请实施例提供的发光器件转印系统的一种结构示意图。发光器件转印系统10用于将发光器件103转印至转印基板101。转印基板101用于接收发光器件103。发光器件103上设置有缓冲层104。发光器件转印系统10包括转印装置105。转印装置105上具有转印探针1051。转印探针1051用于嵌入缓冲层104。转印探针1051与缓冲层104之间的摩擦力大于发光器件103的重力。\n\n[0088]可选的，转印装置105包括摆臂1052和转印探针1051。至少一转印探针1051连接在摆臂1052的至少一端。在一种实施例中，摆臂1052的一端连接多个具有间隔的转印探针1051，摆臂1052的另一端连接控制装置(图中未示出)。通过控制装置控制摆臂1052移动，进而控制转印探针1051嵌入缓冲层104。然后，控制装置控制摆臂1052上升拾取发光器件103。需要说明的是，摆臂1052是一种控制转印探针1051运动的方法，当然还可以采用其他机械部件对转印探针1051进行控制，例如采用机械手抓取转印探针1051，本申请对此不作限制。\n\n[0089]可选的，在本申请的一些实施例中，转印基板101上设置有光阻结构层102。光阻结构层102上设置有多个开口102a。开口102a内设置有导电胶108。转印探针1051与缓冲层104之间的摩擦力小于发光器件103与导电胶108之间的界面结合力。\n\n[0090]如上所述，转印探针1051与缓冲层104的摩擦力大于发光器件103的重力，因此，可以使用嵌入转印探针1051的方法拾取发光器件103。同理，转印探针1051与缓冲层104的摩擦力小于发光器件103与导电胶108的界面结合力，则可以利用发光器件103与导电胶108的界面结合力释放发光器件103，以使发光器件103转移至转印基板101。\n\n[0091]可选的，请参阅图4，图4是本申请实施例提供的发光器件转印方法中转印探针嵌入不同发光器件的一种结构示意图。在一些实施例中，在转印探针1051上还设置有由上而下排列的多个凸起109。凸起109采用热敏材料制作，可用于增大转印探针1051与缓冲层104之间的摩擦力。当转印探针1051嵌入缓冲层104时，可根据需要拾取的发光器件103的重量控制转印探针1051嵌入的深度，并利用凸起109进行定位。\n\n[0092]当转印探针1051释放发光器件103时，对转印探针1051进行加热处理，使凸起109发生热分解。转印探针1051上的凸起109热分解后，转印探针1051与缓冲层104之间产生了空隙。空隙的产生使转印探针1051与缓冲层104之间的摩擦力减小，从而轻易释放发光器件103。\n\n[0093]图4所示的转印探针1051中，以凸起109由上而下设置有两组为例进行示意，但本申请中不限制凸起109的数量。另外，图4中以凸起109为设置在转印探针1051左右两边的颗粒为例进行说明，凸起109还可以是围绕转印探针1051一圈的凸出部，本申请对凸起109的形状、凸起的颗粒数量也不做限制。当发光器件103的重量较小时，可以以第一组凸起1091定位转印探针1051嵌入缓冲层104的深度。同理，当发光器件103的重量较大时，可以以第二组凸起1092定位转印探针1051嵌入缓冲层104的深度。\n\n[0094]在转印探针1051上设置热敏材料制作的凸起109，一方面能够对不同重量的发光器件103进行摩擦力的调控，另一方面还能够对嵌入的深度进行定位。因此，凸起109能够使转印探针1051对发光器件103的拾取更易调控，也能够方便发光器件103的拾取和释放，增大发光器件103转印的准确性。\n\n[0095]可选的，在本申请的一些实施例中，缓冲层104的厚度为20微米至100微米。具体的，缓冲层104的厚度可以为20微米、30微米、40微米、50微米、60微米、70微米、80微米、90微米或100微米。缓冲层104的厚度小于20微米，则容易使转印探针1051刺穿缓冲层104，损坏发光器件103。若缓冲层104的厚度大于100微米，则转印探针1051与缓冲层104之间易产生较大的摩擦力，使发光器件103不易释放。\n\n[0096]本申请实施例提供的发光器件转印系统10包括多个发光器件103、转印装置105以及转印基板101。在发光器件103上增加缓冲层104，发光器件转印系统10利用转印探针1051嵌入缓冲层104拾取发光器件103进行转印。由于是将转印探针1051嵌入发光器件103上的缓冲层104对发光器件103进行转移，因而不存在各个发光器件103受力不均的问题。由此，能够将发光器件103精准置于目标区域，进而提升发光器件103转移的良率。另外，本申请实施例提供的发光器件转印系统10中的转印探针1051可以选用微纳探针。微纳探针的针体较小，能够对微型发光二极管或迷你发光二极管进行转印。采用微纳探针进行转印，能够避免采用真空吸附的转移探头精度小的情况下吸附力过小难以吸附发光器件103的情况，使发光器件103在转移过程中保持稳定。\n\n[0097]以上对本申请实施例所提供的一种发光器件转印方法及发光器件转印系统进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10988, 24042, '技术领域\n\n[0001]本申请涉及显示技术领域，具体地，涉及一种显示面板及其制备方法。\n\n背景技术\n\n[0002]微型发光二极管(Micro-Light Emitting Diode，Micro-LED)显示器是一种以Micro-LED芯片作为像素点的自发光显示器，因其具有高亮度、高发光效率和低功耗等优点，Micro-LED的像素尺寸相对来说，尺寸更小，可适用于室内屏幕和小尺寸显示器的应用，逐渐成为了国际显示行业竞争的焦点，业内多家公司也将其视为下一代显示技术而开始积极布局。\n\n[0003]现有技术中的Micro-LED通常在蓝宝石衬底上沉积氮化镓材料而形成，由于采用无机材料，目前蓝光Micro-LED的效率和寿命相对高，但是红光和绿光的性能相对较差，且一般需要分批巨量转移至基板上，良率较低，实现全彩化比较困难。\n\n[0004]因此需要提出一种新型显示面板及其制备方法，以解决上述蓝光Micro-LED、红光Micro-LED和绿光Micro-LED发光效率、性能和寿命均不同，一般需要分批巨量转移至基板上，良率较低，且实现全彩化比较困难的技术问题。\n\n发明内容\n\n[0005]本发明实施例提供一种显示面板及其制备方法，能够解决上述蓝光Micro-LED、红光Micro-LED和绿光Micro-LED发光效率、性能和寿命均不同，一般需要分批巨量转移至基板上，良率较低，实现全彩化比较困难的技术问题。\n\n[0006]本发明实施例提供一种显示面板，该显示面板包括阵列基板、位于所述阵列基板上的近红外Micro-LED芯片阵列、以及位于所述近红外Micro-LED芯片阵列上的色转化层；所述色转化层的材料包括转换荧光材料和掺杂于所述转换荧光材料中的稀土材料，所述稀土材料包括稀土氟化物、稀土氧化物、稀土氟氧化物中一种或一种以上材料。\n\n[0007]根据本发明一优选实施例，所述色转化层包括与所述近红外Micro-LED芯片对位设置的红色转化层、蓝色转化层和绿色转化层；\n\n[0008]所述红色转化层为80％Yb和2％Er共掺的YOF红色转换荧光材料，所述绿色转化层为18％Yb和2％Er共掺NaYF4绿色转换荧光材料，所述蓝色转化层为20％Yb和1％Tm共掺NaYF4蓝色转换荧光材料。\n\n[0009]根据本发明一优选实施例，所述阵列基板上还设置有平坦化层，所述平坦化层位于近红外Micro-LED芯片阵列的间隙内，所述平坦化层上还设置有第一黑色矩阵，所述第一黑色矩阵位于所述色转化层的间隙。\n\n[0010]根据本发明一优选实施例，所述阵列基板上设置有第二黑色矩阵，所述黑色矩阵位于所述近红外Micro-LED芯片阵列和所述色转化层的间隙。\n\n[0011]根据本发明一优选实施例，每个所述近红外Micro-LED芯片均包括第一GaAs衬底、位于所述第一GaAs衬底之上的InGaP层、位于InGaP层之上的第二GaAs衬底、位于所述第二GaAs衬底之上的GaN:Si层、位于GaN:Si层之上的InGaN/GaN混合层、以及位于InGaN/GaN混合层之上的GaN:Mg层。\n\n[0012]根据本发明一优选实施例，所述阵列基板表面设置有正引脚和负引脚；所述InGaP层两侧均分别设置有第一n电极和第一p电极，所述第一n电极与所述正引脚电性连接，所述第一p电极与所述负引脚电性连接；所述InGaN/GaN混合层两侧分别设置有第二n电极和第二p电极，所述第二n电极也与所述正引脚电性连接，所述第二p电极也与所述负引脚电性连接。\n\n[0013]根据本发明一优选实施例，所述红色转化层、所述蓝色转化层和所述绿色转化层远离所述近红外Micro-LED芯片一侧为凸起的弧形边。\n\n[0014]依据上述实施例的显示面板，本发明还提供一种显示面板的制备方法，所述制备方法包括：\n\n[0015]步骤S10，提供一阵列基板，将近红外Micro-LED芯片转移至所述阵列基板上，对位和固晶焊接，形成近红外Micro-LED芯片阵列。\n\n[0016]步骤S20，在所述近红外Micro-LED芯片阵列上对位制备色转化层，其中，所述色转化层的材料包括转换荧光材料和掺杂于所述转换荧光材料中的稀土材料，所述稀土材料包括稀土氟化物、稀土氧化物、稀土氟氧化物中一种或一种以上材料。\n\n[0017]根据本发明一优选实施例，所述显示面板的制备方法还包括：步骤S30，在所述阵列基板上制备与所述近红外Micro-LED芯片阵列齐平的平坦化层，所述平坦化层用于填平所述近红外Micro-LED芯片阵列的间隙内；在所述平坦化层上制备第一黑色矩阵，所述第一黑色矩阵用于填平所述色转化层的间隙；其中，所述色转化层中的红色转化层、蓝色转化层和绿色转化层的截面形状为倒立的等腰梯形，所述第一黑色矩阵的截面形状为正立的等腰梯形。\n\n[0018]根据本发明一优选实施例，所述显示面板的制备方法还包括：步骤S30，在所述阵列基板上制备与所述色转化层齐平的第二黑色矩阵，所述第二黑色矩阵位于所述近红外Micro-LED芯片阵列和所述色转化层的间隙内；其中，所述色转化层中的红色转化层、蓝色转化层和绿色转化层的截面形状为矩形，所述第二黑色矩阵的截面形状为正立的等腰梯形。\n\n[0019]本发明的有益效果在于：本发明实施例提供一种显示面板及其制备方法，该显示面板包括阵列基板、位于阵列基板表面的近红外Micro-LED芯片阵列以及位于近红外Micro-LED芯片阵列表面的色转化层；色转化层的材料包括转换荧光材料和掺杂于转换荧光材料中的稀土材料，稀土材料包括稀土氟化物、稀土氧化物、稀土氟氧化物中一种或一种以上材料。在转换荧光材料添加稀土材料，由于稀土材料具有较低的声子能量，大大降低了无辐射弛豫几率的发生，有效的提高了转换荧光材料的发光效率，以Yb3+作为敏化剂，Er3+作为活化剂，通过Yb3+向Er 3+之间的能量传递，可以实现有效的近红外光向可见上转换光致发光效率，Er3+，Yb3+共掺的上转换荧光材料效率较高，色纯度高的优点，近红外光通过色转化层转化为纯净的红光、蓝光和绿光，且各个近红外Micro-LED芯片寿命和性能相同，满足Micro-LED的全彩化方案。\n\n附图说明\n\n[0020]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0021]图1为本发明的实施例提供一种显示面板的第一结构示意图。\n\n[0022]图2为本发明的实施例提供一种显示面板的红外Micro-LED芯片的结构示意图。\n\n[0023]图3为本发明的实施例提供一种显示面板的第二结构示意图。\n\n[0024]图4为本发明的实施例提供一种显示面板的第三结构示意图。\n\n[0025]图5为本发明的实施例提供一种显示面板的第四结构示意图。\n\n[0026]图6至图9为本发明的实施例提供一种显示面板的一种制备方法的结构示意图。\n\n[0027]图10至图12为本发明的实施例提供一种显示面板的另一种制备方法的结构示意图。\n\n具体实施方式\n\n[0028]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示，图中虚线表示在结构中并不存在的，仅仅说明结构的形状和位置。\n\n[0029]本发明针对现有技术中的蓝光Micro-LED、红光Micro-LED和绿光Micro-LED发光效率、性能和寿命均不同，一般需要分批巨量转移至基板上，良率较低，实现全彩化比较困难的技术问题，本实施例能够解决该缺陷。\n\n[0030]本发明实施例提供一种显示面板，该显示面板包括阵列基板、位于阵列基板表面的近红外Micro-LED芯片阵列以及位于近红外Micro-LED芯片阵列表面的色转化层；色转化层的材料包括转换荧光材料和掺杂于转换荧光材料中的稀土材料，稀土材料包括稀土氟化物、稀土氧化物、稀土氟氧化物中一种或一种以上材料。在转换荧光材料添加稀土材料，由于稀土材料具有较低的声子能量，大大降低了无辐射弛豫几率的发生，有效的提高了转换荧光材料的发光效率，以Yb3+作为敏化剂，Er3+作为活化剂，通过Yb3+向Er3+之间的能量传递，可以实现有效的近红外光向可见上转换光致发光效率，Er3+，Yb3+共掺的上转换荧光材料效率较高，色纯度高的优点。\n\n[0031]本实施例中的色转化层包括与近红外Micro-LED芯片对位设置的红色转化层、蓝色转化层和绿色转化层；红色转化层为80％Yb和2％Er共掺的YOF红色转换荧光材料，绿色转化层为18％Yb和2％Er共掺NaYF4绿色转换荧光材料，蓝色转化层为20％Yb和1％Tm共掺NaYF4蓝色转换荧光材料。每个近红外Micro-LED芯片均包括第一GaAs衬底、位于第一GaAs衬底之上的InGaP层、位于InGaP层之上的第二GaAs衬底、位于第二GaAs衬底之上的GaN:Si层、位于GaN:Si层之上的InGaN/GaN混合层、以及位于InGaN/GaN混合层之上的GaN:Mg层。红光LED由磷化铟镓(InGaP)制成，而蓝光和绿光LED由氮化铟镓(InGaN)半导体组成。阵列基板表面设置有正引脚和负引脚，InGaP层和InGaN/GaN混合层两侧均分别设置有n电极和p电极；其中，n电极与正引脚电性连接，p电极与负引脚电性连接。色转化层包括与红外Micro-LED芯片对位设置的红色转化层、蓝色转化层和绿色转化层；红色转化层为80％Yb(镱)和2％Er(铒)共掺YOF红色上转换荧光材料，绿色转化层为18％Yb(镱)和2％Er(铒)共掺NaYF4绿色上转换荧光材料，绿色转化层为20％Yb(镱)和1％Tm(铥)共掺NaYF4蓝色上转换荧光材料。红色转化层、蓝色转化层和绿色转化层中两两色阻块之间设置有黑色矩阵。\n\n[0032]由于本发明的近红外Micro-LED芯片膜层设置由红光LED磷化铟镓(InGaP)膜层、蓝光和绿光LED的氮化铟镓(InGaN)膜层，因此红外Micro-LED芯片出射的混合红色可以经过特定色转化层出射对应的红光、蓝光和绿色，且色彩纯净，Micro-LED的全彩化方案，各个近红外Micro-LED芯片的结构和形状相同，可解决蓝光Micro-LED、红光Micro-LED和绿光Micro-LED发光效率、性能和寿命均不同，一般需要分批巨量转移至基板上，良率较低，实现全彩化比较困难的技术问题。\n\n[0033]具体地，如图1所示，本发明提供一种显示面板的第一结构示意图，本实例的显示面板100包括阵列基板101、位于阵列基板101表面的近红外Micro-LED芯片102阵列以及位于近红外Micro-LED芯片102阵列表面的色转化层104；阵列基板101还设置有平坦化层103，平坦化层103与近红外Micro-LED芯片102阵列平齐，且平坦化层103填补近红外Micro-LED芯片102阵列的间隙，色转化层104包括近红外Micro-LED芯片102对位设置的红色转化层1041、蓝色转化层1042和绿色转化层1043；红色转化层1041、蓝色转化层1042和绿色转化层1043的截面形状优选为倒立的等腰梯形；红色转化层1041、蓝色转化层1042和绿色转化层1043中两两色阻块之间设置有第一黑色矩阵105。第一黑色矩阵105的截面形状优选为正立的等腰梯形，近红外Micro-LED芯片102的截面形状优选为矩形，矩形的长边小于或等于色转化层的底边。\n\n[0034]如图2所示，本发明提供一种显示面板中的红外Micro-LED芯片的结构示意图，每个近红外Micro-LED芯片102均包括第一GaAs衬底(砷化镓材料层)1021、位于第一GaAs衬底1021之上的InGaP层(磷化铟镓发光材料层)1022、位于InGaP层1022之上的第二GaAs衬底(砷化镓材料层)1023、位于第二GaAs衬底1023之上的GaN:Si层(硅基氮化镓材料层)1024、位于GaN:Si层1024之上的InGaN/GaN(MQW)混合层(氮化镓或者氮化铟镓发光材料层)1025、以及位于InGaN/GaN混合层1025之上的GaN:Mg层(镁基氮化镓材料层)1026，红光由磷化铟镓(InGaP)制成，而蓝光和绿光由氮化铟镓(InGaN)半导体组成，本发明的红外Micro-LED芯片发生的红外线掺杂蓝光和绿光。\n\n[0035]本实施例的阵列基板101表面设置有正引脚和负引脚(图中未画出具体结构)；InGaP层1022两侧均分别设置有第一n电极和第一p电极(图中未画出具体结构)，第一n电极与正引脚电性连接，第一p电极与负引脚电性连接；InGaN/GaN混合层1025两侧分别设置有第二n电极和第二p电极(图中未画出具体结构)，第二n电极也与正引脚电性连接，第二p电极也与负引脚电性连接，以实现给每个近红外Micro-LED芯片102通电，使显示面板100正常工作。\n\n[0036]如图3所示，本发明提供一种显示面板的第二结构示意图，本实施例中的平坦化层103表面设置有封装层106，封装层106还填补红色转化层1041、蓝色转化层1042、绿色转化层1043和第一黑色矩阵105的间隙。封装层106优选为无机层和有机层叠加膜层。\n\n[0037]如图4所示，本发明提供一种显示面板100的第三结构示意图，本实施例中的阵列基板101上设置有第二黑色矩阵107，第二黑色矩阵107位于近红外Micro-LED芯片102阵列和色转化层104的间隙。第二黑色矩阵107一端位于阵列基板101，另一端与红色转化层1041、蓝色转化层1042、绿色转化层1043齐平，其中，色转化层104中的红色转化层1041、蓝色转化层1042和绿色转化层1043的截面形状优选为倒立的等腰梯形，第二黑色矩阵107的截面形状优选为正立的等腰梯形，近红外Micro-LED芯片102的截面形状优选为矩形，矩形的长边小于或等于色阻层的底边。\n\n[0038]如图5所示，本发明提供一种显示面板100的第四结构示意图，本实施例中的阵列基板101上设置有第二黑色矩阵107，第二黑色矩阵107位于近红外Micro-LED芯片102阵列和色转化层104的间隙。第二黑色矩阵107一端位于阵列基板101，另一端与红色转化层1041、蓝色转化层1042、绿色转化层1043齐平，其中，色转化层104中的红色转化层1041、蓝色转化层1042和绿色转化层1043的截面形状优选为矩形，第二黑色矩阵107的截面形状优选为正立的等腰梯形，近红外Micro-LED芯片102的截面形状优选为矩形。\n\n[0039]在另一种实施例中的红色转化层、蓝色转化层和绿色转化层远离红外Micro-LED芯片一侧为凸起的弧形边，凸起的弧形边可以增加显示面板的光线的视角。\n\n[0040]依据上述实施例的显示面板，本发明还提供一种显示面板的制备方法，所述制备方法包括：\n\n[0041]步骤S10，提供一阵列基板，将近红外Micro-LED芯片转移至所述阵列基板上，对位和固晶焊接，形成近红外Micro-LED芯片阵列。\n\n[0042]步骤S20，在所述近红外Micro-LED芯片阵列上对位制备色转化层，其中，所述色转化层的材料包括转换荧光材料和掺杂于所述转换荧光材料中的稀土材料，所述稀土材料包括稀土氟化物、稀土氧化物、稀土氟氧化物中一种或一种以上材料。\n\n[0043]优选地，所述显示面板的制备方法还包括：步骤S30，在所述阵列基板上制备与所述近红外Micro-LED芯片阵列齐平的平坦化层，所述平坦化层用于填平所述近红外Micro-LED芯片阵列的间隙内；在所述平坦化层上制备第一黑色矩阵，所述第一黑色矩阵用于填平所述色转化层的间隙；其中，所述色转化层中的红色转化层、蓝色转化层和绿色转化层的截面形状为倒立的等腰梯形，所述第一黑色矩阵的截面形状为正立的等腰梯形。\n\n[0044]图6至图9为实施例一的具体制备方法，如图6所示，本发明提供阵列基板101，阵列基板101优选为薄膜晶体管基板，通过流体巨量转移方法将若干近红外Micro-LED芯片102转移至阵列基板101，阵列基板101表面设置正引脚和负引脚，近红外Micro-LED芯片102两侧分别设置n电极和p电极；其中，n电极与正引脚进行键合，p电极与负引脚进行键合，以此实现近红外Micro-LED芯片102对位和固晶焊接在阵列基板101。如图7所示，在阵列基板101表面还制备平坦化层103，平坦化层103用于填平近红外Micro-LED芯片102的间隙。如图8所示，在平坦化层103上制备第一黑色矩阵105，第一黑色矩阵105错开红外Micro-LED芯片102设置。如图9所示，在近红外Micro-LED芯片102正上方制备的红色转化层1041、蓝色转化层1042和绿色转化层1043，以此完成实施例一的具体制备方法。\n\n[0045]实施例二的所述显示面板的制备方法还包括：步骤S30，在所述阵列基板上制备与所述色转化层齐平的第二黑色矩阵，所述第二黑色矩阵位于所述近红外Micro-LED芯片阵列和所述色转化层的间隙内；其中，所述色转化层中的红色转化层、蓝色转化层和绿色转化层的截面形状为矩形，所述第二黑色矩阵的截面形状为正立的等腰梯形。\n\n[0046]图10至图12为实施例二的具体制备方法。如图10所示，本发明提供阵列基板101，阵列基板101优选为薄膜晶体管基板，通过流体巨量转移方法将若干近红外Micro-LED芯片102转移至阵列基板101，阵列基板101表面设置正引脚和负引脚，红外Micro-LED芯片两侧分别设置n电极和p电极；其中，n电极与正引脚进行键合，p电极与负引脚进行键合，以此实现近红外Micro-LED芯片102对位和固晶焊接在阵列基板101。如图11所示，在红外Micro-LED芯片102正上方制备的红色转化层1041、蓝色转化层1042和绿色转化层1043。如图12所示，在近红外Micro-LED芯片102、红色转化层1041、蓝色转化层1042和绿色转化层1043两侧间隙制备第二黑色矩阵107，第二黑色矩阵107用于填平红外Micro-LED芯片102、红色转化层1041、蓝色转化层1042、绿色转化层1043和黑色矩阵105的间隙，以此完成实施例二的具体制备方法。\n\n[0047]本发明实施例提供一种显示面板及其制备方法，该显示面板包括阵列基板、位于所述阵列基板表面的红外Micro-LED芯片阵列以及位于红外Micro-LED芯片阵列表面的色转化层；每个所述红外Micro-LED芯片均包括第一GaAs衬底、位于所述第一GaAs衬底之上的InGaP层、位于InGaP层之上的第二GaAs衬底、位于所述第二GaAs衬底之上的GaN:Si层、位于GaN:Si层之上的InGaN/GaN混合层、以及位于InGaN/GaN混合层之上的GaN:Mg层，由于本发明的红外Micro-LED芯片膜层设置由红光LED磷化铟镓(InGaP)膜层、蓝光和绿光LED的氮化铟镓(InGaN)膜层，因此红外Micro-LED芯片出射的混合红色可以经过色转化层出射对应的红光、蓝光和绿色，且色彩纯净，Micro-LED的全彩化方案，解决蓝光Micro-LED、红光Micro-LED和绿光Micro-LED发光效率、性能和寿命均不同，一般需要分批巨量转移至基板上，良率较低，实现全彩化比较困难的技术问题。\n\n[0048]综上，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体地，涉及一种显示面板及其制备方法。\n\n背景技术\n\n[0002]微型发光二极管(Micro-Light Emitting Diode，Micro-LED)显示器是一种以Micro-LED芯片作为像素点的自发光显示器，因其具有高亮度、高发光效率和低功耗等优点，Micro-LED的像素尺寸相对来说，尺寸更小，可适用于室内屏幕和小尺寸显示器的应用，逐渐成为了国际显示行业竞争的焦点，业内多家公司也将其视为下一代显示技术而开始积极布局。\n\n[0003]现有技术中的Micro-LED通常在蓝宝石衬底上沉积氮化镓材料而形成，由于采用无机材料，目前蓝光Micro-LED的效率和寿命相对高，但是红光和绿光的性能相对较差，且一般需要分批巨量转移至基板上，良率较低，实现全彩化比较困难。\n\n[0004]因此需要提出一种新型显示面板及其制备方法，以解决上述蓝光Micro-LED、红光Micro-LED和绿光Micro-LED发光效率、性能和寿命均不同，一般需要分批巨量转移至基板上，良率较低，且实现全彩化比较困难的技术问题。\n\n发明内容\n\n[0005]本发明实施例提供一种显示面板及其制备方法，能够解决上述蓝光Micro-LED、红光Micro-LED和绿光Micro-LED发光效率、性能和寿命均不同，一般需要分批巨量转移至基板上，良率较低，实现全彩化比较困难的技术问题。\n\n[0006]本发明实施例提供一种显示面板，该显示面板包括阵列基板、位于所述阵列基板上的近红外Micro-LED芯片阵列、以及位于所述近红外Micro-LED芯片阵列上的色转化层；所述色转化层的材料包括转换荧光材料和掺杂于所述转换荧光材料中的稀土材料，所述稀土材料包括稀土氟化物、稀土氧化物、稀土氟氧化物中一种或一种以上材料。\n\n[0007]根据本发明一优选实施例，所述色转化层包括与所述近红外Micro-LED芯片对位设置的红色转化层、蓝色转化层和绿色转化层；\n\n[0008]所述红色转化层为80％Yb和2％Er共掺的YOF红色转换荧光材料，所述绿色转化层为18％Yb和2％Er共掺NaYF4绿色转换荧光材料，所述蓝色转化层为20％Yb和1％Tm共掺NaYF4蓝色转换荧光材料。\n\n[0009]根据本发明一优选实施例，所述阵列基板上还设置有平坦化层，所述平坦化层位于近红外Micro-LED芯片阵列的间隙内，所述平坦化层上还设置有第一黑色矩阵，所述第一黑色矩阵位于所述色转化层的间隙。\n\n[0010]根据本发明一优选实施例，所述阵列基板上设置有第二黑色矩阵，所述黑色矩阵位于所述近红外Micro-LED芯片阵列和所述色转化层的间隙。\n\n[0011]根据本发明一优选实施例，每个所述近红外Micro-LED芯片均包括第一GaAs衬底、位于所述第一GaAs衬底之上的InGaP层、位于InGaP层之上的第二GaAs衬底、位于所述第二GaAs衬底之上的GaN:Si层、位于GaN:Si层之上的InGaN/GaN混合层、以及位于InGaN/GaN混合层之上的GaN:Mg层。\n\n[0012]根据本发明一优选实施例，所述阵列基板表面设置有正引脚和负引脚；所述InGaP层两侧均分别设置有第一n电极和第一p电极，所述第一n电极与所述正引脚电性连接，所述第一p电极与所述负引脚电性连接；所述InGaN/GaN混合层两侧分别设置有第二n电极和第二p电极，所述第二n电极也与所述正引脚电性连接，所述第二p电极也与所述负引脚电性连接。\n\n[0013]根据本发明一优选实施例，所述红色转化层、所述蓝色转化层和所述绿色转化层远离所述近红外Micro-LED芯片一侧为凸起的弧形边。\n\n[0014]依据上述实施例的显示面板，本发明还提供一种显示面板的制备方法，所述制备方法包括：\n\n[0015]步骤S10，提供一阵列基板，将近红外Micro-LED芯片转移至所述阵列基板上，对位和固晶焊接，形成近红外Micro-LED芯片阵列。\n\n[0016]步骤S20，在所述近红外Micro-LED芯片阵列上对位制备色转化层，其中，所述色转化层的材料包括转换荧光材料和掺杂于所述转换荧光材料中的稀土材料，所述稀土材料包括稀土氟化物、稀土氧化物、稀土氟氧化物中一种或一种以上材料。\n\n[0017]根据本发明一优选实施例，所述显示面板的制备方法还包括：步骤S30，在所述阵列基板上制备与所述近红外Micro-LED芯片阵列齐平的平坦化层，所述平坦化层用于填平所述近红外Micro-LED芯片阵列的间隙内；在所述平坦化层上制备第一黑色矩阵，所述第一黑色矩阵用于填平所述色转化层的间隙；其中，所述色转化层中的红色转化层、蓝色转化层和绿色转化层的截面形状为倒立的等腰梯形，所述第一黑色矩阵的截面形状为正立的等腰梯形。\n\n[0018]根据本发明一优选实施例，所述显示面板的制备方法还包括：步骤S30，在所述阵列基板上制备与所述色转化层齐平的第二黑色矩阵，所述第二黑色矩阵位于所述近红外Micro-LED芯片阵列和所述色转化层的间隙内；其中，所述色转化层中的红色转化层、蓝色转化层和绿色转化层的截面形状为矩形，所述第二黑色矩阵的截面形状为正立的等腰梯形。\n\n[0019]本发明的有益效果在于：本发明实施例提供一种显示面板及其制备方法，该显示面板包括阵列基板、位于阵列基板表面的近红外Micro-LED芯片阵列以及位于近红外Micro-LED芯片阵列表面的色转化层；色转化层的材料包括转换荧光材料和掺杂于转换荧光材料中的稀土材料，稀土材料包括稀土氟化物、稀土氧化物、稀土氟氧化物中一种或一种以上材料。在转换荧光材料添加稀土材料，由于稀土材料具有较低的声子能量，大大降低了无辐射弛豫几率的发生，有效的提高了转换荧光材料的发光效率，以Yb3+作为敏化剂，Er3+作为活化剂，通过Yb3+向Er 3+之间的能量传递，可以实现有效的近红外光向可见上转换光致发光效率，Er3+，Yb3+共掺的上转换荧光材料效率较高，色纯度高的优点，近红外光通过色转化层转化为纯净的红光、蓝光和绿光，且各个近红外Micro-LED芯片寿命和性能相同，满足Micro-LED的全彩化方案。\n\n附图说明\n\n[0020]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0021]图1为本发明的实施例提供一种显示面板的第一结构示意图。\n\n[0022]图2为本发明的实施例提供一种显示面板的红外Micro-LED芯片的结构示意图。\n\n[0023]图3为本发明的实施例提供一种显示面板的第二结构示意图。\n\n[0024]图4为本发明的实施例提供一种显示面板的第三结构示意图。\n\n[0025]图5为本发明的实施例提供一种显示面板的第四结构示意图。\n\n[0026]图6至图9为本发明的实施例提供一种显示面板的一种制备方法的结构示意图。\n\n[0027]图10至图12为本发明的实施例提供一种显示面板的另一种制备方法的结构示意图。\n\n具体实施方式\n\n[0028]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示，图中虚线表示在结构中并不存在的，仅仅说明结构的形状和位置。\n\n[0029]本发明针对现有技术中的蓝光Micro-LED、红光Micro-LED和绿光Micro-LED发光效率、性能和寿命均不同，一般需要分批巨量转移至基板上，良率较低，实现全彩化比较困难的技术问题，本实施例能够解决该缺陷。\n\n[0030]本发明实施例提供一种显示面板，该显示面板包括阵列基板、位于阵列基板表面的近红外Micro-LED芯片阵列以及位于近红外Micro-LED芯片阵列表面的色转化层；色转化层的材料包括转换荧光材料和掺杂于转换荧光材料中的稀土材料，稀土材料包括稀土氟化物、稀土氧化物、稀土氟氧化物中一种或一种以上材料。在转换荧光材料添加稀土材料，由于稀土材料具有较低的声子能量，大大降低了无辐射弛豫几率的发生，有效的提高了转换荧光材料的发光效率，以Yb3+作为敏化剂，Er3+作为活化剂，通过Yb3+向Er3+之间的能量传递，可以实现有效的近红外光向可见上转换光致发光效率，Er3+，Yb3+共掺的上转换荧光材料效率较高，色纯度高的优点。\n\n[0031]本实施例中的色转化层包括与近红外Micro-LED芯片对位设置的红色转化层、蓝色转化层和绿色转化层；红色转化层为80％Yb和2％Er共掺的YOF红色转换荧光材料，绿色转化层为18％Yb和2％Er共掺NaYF4绿色转换荧光材料，蓝色转化层为20％Yb和1％Tm共掺NaYF4蓝色转换荧光材料。每个近红外Micro-LED芯片均包括第一GaAs衬底、位于第一GaAs衬底之上的InGaP层、位于InGaP层之上的第二GaAs衬底、位于第二GaAs衬底之上的GaN:Si层、位于GaN:Si层之上的InGaN/GaN混合层、以及位于InGaN/GaN混合层之上的GaN:Mg层。红光LED由磷化铟镓(InGaP)制成，而蓝光和绿光LED由氮化铟镓(InGaN)半导体组成。阵列基板表面设置有正引脚和负引脚，InGaP层和InGaN/GaN混合层两侧均分别设置有n电极和p电极；其中，n电极与正引脚电性连接，p电极与负引脚电性连接。色转化层包括与红外Micro-LED芯片对位设置的红色转化层、蓝色转化层和绿色转化层；红色转化层为80％Yb(镱)和2％Er(铒)共掺YOF红色上转换荧光材料，绿色转化层为18％Yb(镱)和2％Er(铒)共掺NaYF4绿色上转换荧光材料，绿色转化层为20％Yb(镱)和1％Tm(铥)共掺NaYF4蓝色上转换荧光材料。红色转化层、蓝色转化层和绿色转化层中两两色阻块之间设置有黑色矩阵。\n\n[0032]由于本发明的近红外Micro-LED芯片膜层设置由红光LED磷化铟镓(InGaP)膜层、蓝光和绿光LED的氮化铟镓(InGaN)膜层，因此红外Micro-LED芯片出射的混合红色可以经过特定色转化层出射对应的红光、蓝光和绿色，且色彩纯净，Micro-LED的全彩化方案，各个近红外Micro-LED芯片的结构和形状相同，可解决蓝光Micro-LED、红光Micro-LED和绿光Micro-LED发光效率、性能和寿命均不同，一般需要分批巨量转移至基板上，良率较低，实现全彩化比较困难的技术问题。\n\n[0033]具体地，如图1所示，本发明提供一种显示面板的第一结构示意图，本实例的显示面板100包括阵列基板101、位于阵列基板101表面的近红外Micro-LED芯片102阵列以及位于近红外Micro-LED芯片102阵列表面的色转化层104；阵列基板101还设置有平坦化层103，平坦化层103与近红外Micro-LED芯片102阵列平齐，且平坦化层103填补近红外Micro-LED芯片102阵列的间隙，色转化层104包括近红外Micro-LED芯片102对位设置的红色转化层1041、蓝色转化层1042和绿色转化层1043；红色转化层1041、蓝色转化层1042和绿色转化层1043的截面形状优选为倒立的等腰梯形；红色转化层1041、蓝色转化层1042和绿色转化层1043中两两色阻块之间设置有第一黑色矩阵105。第一黑色矩阵105的截面形状优选为正立的等腰梯形，近红外Micro-LED芯片102的截面形状优选为矩形，矩形的长边小于或等于色转化层的底边。\n\n[0034]如图2所示，本发明提供一种显示面板中的红外Micro-LED芯片的结构示意图，每个近红外Micro-LED芯片102均包括第一GaAs衬底(砷化镓材料层)1021、位于第一GaAs衬底1021之上的InGaP层(磷化铟镓发光材料层)1022、位于InGaP层1022之上的第二GaAs衬底(砷化镓材料层)1023、位于第二GaAs衬底1023之上的GaN:Si层(硅基氮化镓材料层)1024、位于GaN:Si层1024之上的InGaN/GaN(MQW)混合层(氮化镓或者氮化铟镓发光材料层)1025、以及位于InGaN/GaN混合层1025之上的GaN:Mg层(镁基氮化镓材料层)1026，红光由磷化铟镓(InGaP)制成，而蓝光和绿光由氮化铟镓(InGaN)半导体组成，本发明的红外Micro-LED芯片发生的红外线掺杂蓝光和绿光。\n\n[0035]本实施例的阵列基板101表面设置有正引脚和负引脚(图中未画出具体结构)；InGaP层1022两侧均分别设置有第一n电极和第一p电极(图中未画出具体结构)，第一n电极与正引脚电性连接，第一p电极与负引脚电性连接；InGaN/GaN混合层1025两侧分别设置有第二n电极和第二p电极(图中未画出具体结构)，第二n电极也与正引脚电性连接，第二p电极也与负引脚电性连接，以实现给每个近红外Micro-LED芯片102通电，使显示面板100正常工作。\n\n[0036]如图3所示，本发明提供一种显示面板的第二结构示意图，本实施例中的平坦化层103表面设置有封装层106，封装层106还填补红色转化层1041、蓝色转化层1042、绿色转化层1043和第一黑色矩阵105的间隙。封装层106优选为无机层和有机层叠加膜层。\n\n[0037]如图4所示，本发明提供一种显示面板100的第三结构示意图，本实施例中的阵列基板101上设置有第二黑色矩阵107，第二黑色矩阵107位于近红外Micro-LED芯片102阵列和色转化层104的间隙。第二黑色矩阵107一端位于阵列基板101，另一端与红色转化层1041、蓝色转化层1042、绿色转化层1043齐平，其中，色转化层104中的红色转化层1041、蓝色转化层1042和绿色转化层1043的截面形状优选为倒立的等腰梯形，第二黑色矩阵107的截面形状优选为正立的等腰梯形，近红外Micro-LED芯片102的截面形状优选为矩形，矩形的长边小于或等于色阻层的底边。\n\n[0038]如图5所示，本发明提供一种显示面板100的第四结构示意图，本实施例中的阵列基板101上设置有第二黑色矩阵107，第二黑色矩阵107位于近红外Micro-LED芯片102阵列和色转化层104的间隙。第二黑色矩阵107一端位于阵列基板101，另一端与红色转化层1041、蓝色转化层1042、绿色转化层1043齐平，其中，色转化层104中的红色转化层1041、蓝色转化层1042和绿色转化层1043的截面形状优选为矩形，第二黑色矩阵107的截面形状优选为正立的等腰梯形，近红外Micro-LED芯片102的截面形状优选为矩形。\n\n[0039]在另一种实施例中的红色转化层、蓝色转化层和绿色转化层远离红外Micro-LED芯片一侧为凸起的弧形边，凸起的弧形边可以增加显示面板的光线的视角。\n\n[0040]依据上述实施例的显示面板，本发明还提供一种显示面板的制备方法，所述制备方法包括：\n\n[0041]步骤S10，提供一阵列基板，将近红外Micro-LED芯片转移至所述阵列基板上，对位和固晶焊接，形成近红外Micro-LED芯片阵列。\n\n[0042]步骤S20，在所述近红外Micro-LED芯片阵列上对位制备色转化层，其中，所述色转化层的材料包括转换荧光材料和掺杂于所述转换荧光材料中的稀土材料，所述稀土材料包括稀土氟化物、稀土氧化物、稀土氟氧化物中一种或一种以上材料。\n\n[0043]优选地，所述显示面板的制备方法还包括：步骤S30，在所述阵列基板上制备与所述近红外Micro-LED芯片阵列齐平的平坦化层，所述平坦化层用于填平所述近红外Micro-LED芯片阵列的间隙内；在所述平坦化层上制备第一黑色矩阵，所述第一黑色矩阵用于填平所述色转化层的间隙；其中，所述色转化层中的红色转化层、蓝色转化层和绿色转化层的截面形状为倒立的等腰梯形，所述第一黑色矩阵的截面形状为正立的等腰梯形。\n\n[0044]图6至图9为实施例一的具体制备方法，如图6所示，本发明提供阵列基板101，阵列基板101优选为薄膜晶体管基板，通过流体巨量转移方法将若干近红外Micro-LED芯片102转移至阵列基板101，阵列基板101表面设置正引脚和负引脚，近红外Micro-LED芯片102两侧分别设置n电极和p电极；其中，n电极与正引脚进行键合，p电极与负引脚进行键合，以此实现近红外Micro-LED芯片102对位和固晶焊接在阵列基板101。如图7所示，在阵列基板101表面还制备平坦化层103，平坦化层103用于填平近红外Micro-LED芯片102的间隙。如图8所示，在平坦化层103上制备第一黑色矩阵105，第一黑色矩阵105错开红外Micro-LED芯片102设置。如图9所示，在近红外Micro-LED芯片102正上方制备的红色转化层1041、蓝色转化层1042和绿色转化层1043，以此完成实施例一的具体制备方法。\n\n[0045]实施例二的所述显示面板的制备方法还包括：步骤S30，在所述阵列基板上制备与所述色转化层齐平的第二黑色矩阵，所述第二黑色矩阵位于所述近红外Micro-LED芯片阵列和所述色转化层的间隙内；其中，所述色转化层中的红色转化层、蓝色转化层和绿色转化层的截面形状为矩形，所述第二黑色矩阵的截面形状为正立的等腰梯形。\n\n[0046]图10至图12为实施例二的具体制备方法。如图10所示，本发明提供阵列基板101，阵列基板101优选为薄膜晶体管基板，通过流体巨量转移方法将若干近红外Micro-LED芯片102转移至阵列基板101，阵列基板101表面设置正引脚和负引脚，红外Micro-LED芯片两侧分别设置n电极和p电极；其中，n电极与正引脚进行键合，p电极与负引脚进行键合，以此实现近红外Micro-LED芯片102对位和固晶焊接在阵列基板101。如图11所示，在红外Micro-LED芯片102正上方制备的红色转化层1041、蓝色转化层1042和绿色转化层1043。如图12所示，在近红外Micro-LED芯片102、红色转化层1041、蓝色转化层1042和绿色转化层1043两侧间隙制备第二黑色矩阵107，第二黑色矩阵107用于填平红外Micro-LED芯片102、红色转化层1041、蓝色转化层1042、绿色转化层1043和黑色矩阵105的间隙，以此完成实施例二的具体制备方法。\n\n[0047]本发明实施例提供一种显示面板及其制备方法，该显示面板包括阵列基板、位于所述阵列基板表面的红外Micro-LED芯片阵列以及位于红外Micro-LED芯片阵列表面的色转化层；每个所述红外Micro-LED芯片均包括第一GaAs衬底、位于所述第一GaAs衬底之上的InGaP层、位于InGaP层之上的第二GaAs衬底、位于所述第二GaAs衬底之上的GaN:Si层、位于GaN:Si层之上的InGaN/GaN混合层、以及位于InGaN/GaN混合层之上的GaN:Mg层，由于本发明的红外Micro-LED芯片膜层设置由红光LED磷化铟镓(InGaP)膜层、蓝光和绿光LED的氮化铟镓(InGaN)膜层，因此红外Micro-LED芯片出射的混合红色可以经过色转化层出射对应的红光、蓝光和绿色，且色彩纯净，Micro-LED的全彩化方案，解决蓝光Micro-LED、红光Micro-LED和绿光Micro-LED发光效率、性能和寿命均不同，一般需要分批巨量转移至基板上，良率较低，实现全彩化比较困难的技术问题。\n\n[0048]综上，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10989, 24043, '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种滤光准直复合膜及其制造方法、显示装置。\n\n背景技术\n\n[0002]显示面板已经广泛用于人们生活中，例如手机、电脑等的显示屏幕。随着显示技术的发展以及人们对显示技术的进步要求，人们对显示面板的显示品质要求越来越高，已经开发了在显示面板的背侧设置传感器的显示装置，例如在显示面板的背侧设置指纹识别传感器，设置传感器装置时，需要设置多个膜层，包括单独设置的光滤过层、单独制作的准直层，单独制作或贴附的棱镜层。\n\n[0003]然而，当前在显示面板的背侧设置传感器的显示装置中，单独设置的光滤过层、单独制作的准直层，单独制作或贴附的棱镜层，使得显示装置厚度较厚，不利于轻薄化，且制作工艺复杂。\n\n发明内容\n\n[0004]本申请实施例提供了一种滤光准直复合膜及其制造方法、显示装置，可以解决当前在显示面板的背侧设置传感器的显示装置中，存在显示装置厚度较厚，不利于轻薄化，且制作工艺复杂的问题。\n\n[0005]本申请实施例提供了一种滤光准直复合膜，包括：\n\n[0006]滤光膜层，用于使特定波长的光透过；\n\n[0007]第一棱镜膜层，设置于所述滤光膜层上，所述第一棱镜膜层包括多个第一棱镜结构；\n\n[0008]第二棱镜膜层，包括透光层和多个第二棱镜结构，所述第二棱镜结构设置于所述透光层远离所述滤光膜层的一侧；\n\n[0009]准直层，设置于所述滤光膜层和所述第二棱镜膜层之间，所述准直层包括准直孔，所述准直层用于收敛通过所述准直孔的光线。\n\n[0010]可选的，在本申请的一些实施例中，所述滤光膜层包括交替层叠设置的第一材料膜层和第二材料膜层，所述第一材料膜层和所述第二材料膜层满足如下公式：\n\n[0011]λ＝2(n1*d1+n2*d2)\n\n[0012]λ为可见光的波长，n1为所述第一材料膜层的折射率，n2为所述第二材料膜层的折射率，d1为所述第一材料膜层的厚度，d2为所述第二材料膜层的厚度。\n\n[0013]可选的，在本申请的一些实施例中，n1/n2的范围为1.1～1.3。\n\n[0014]可选的，在本申请的一些实施例中，所述准直孔的孔深与孔宽的比值大于或等于6：1，所述准直孔的孔深与孔宽的比值小于或等于10：1。\n\n[0015]可选的，在本申请的一些实施例中，所述准直层包括基底，以及设置于所述基底两侧的第一子准直层和第二子准直层，所述第一子准直层包括第一准直孔，所述第二子准直层包括第二准直孔。\n\n[0016]可选的，在本申请的一些实施例中，所述第一子准直层设置于所述滤光膜层和所述基底之间，所述第二子准直层设置于所述基底和所述第二棱镜膜层之间，所述第一准直孔的孔深与孔宽的比值大于或等于所述第二准直孔的孔深与孔宽的比值。\n\n[0017]相应的，本申请实施例还提供了一种显示装置，包括如上述任一项所述的滤光准直复合膜层，所述显示装置还包括：\n\n[0018]显示面板；\n\n[0019]导光构件，设置于所述显示面板的显示侧；\n\n[0020]信号发射器，设置于所述导光构件的至少一边缘，且所述信号发射器发出的调制光在所述导光构件内发生全反射；以及\n\n[0021]传感器阵列，设置于所述显示面板远离所述导光构件的一侧，用于接收识别所述信号发射器发出的调制光；\n\n[0022]其中，所述滤光准直复合膜，设置于所述显示面板与所述传感器阵列之间。\n\n[0023]可选的，在本申请的一些实施例中，所述显示面板为液晶显示面板，所述显示装置还包括导光板，所述导光板设置于所述显示面板远离所述导光构件的一侧，所述滤光准直复合膜层设置于所述导光板远离所述显示面板的一侧。\n\n[0024]可选的，在本申请的一些实施例中，所述显示装置还包括背光源，所述背光源设置于所述导光板的任一侧端的外侧，所述滤光准直复合膜还用作所述背光源的反射层。\n\n[0025]可选的，在本申请的一些实施例中，所述显示面板包括有机发光显示面板、微型发光二极管显示面板中的至少一种。\n\n[0026]相应的，本申请实施例还提供了一种滤光准直复合膜的制造方法，包括如下制造步骤：\n\n[0027]步骤S100：提供一滤光膜层，滤光膜层可以使特定波长的光透过；\n\n[0028]步骤S200：在所述滤光膜层的一侧表面形成第一棱镜膜层，所述第一棱镜膜层包括多个第一棱镜结构；\n\n[0029]步骤S300：在所述滤光膜层的另一侧表面形成准直层；\n\n[0030]步骤S400：提供第二棱镜膜层，所述第二棱镜膜层包括透光层和设置于所述透光层上的第二棱镜结构；\n\n[0031]步骤S500：将所述第二棱镜膜层的透光层与所述滤光膜层上的准直层贴合。\n\n[0032]本申请实施例中，提供了一种滤光准直复合膜及其制造方法、显示装置，滤光准直复合膜包括一体结构的滤光膜层、第一棱镜膜层、第二棱镜膜层和准直层，将滤光膜层、第一棱镜膜层、第二棱镜膜层和准直层制作为一整体，在显示装置中直接贴附使用即可，不需要单独设置光滤过层，不需要单独制作准直层，不需要单独制作或贴附的棱镜层，可以降低显示装置厚度较厚，利于轻薄化，且简化了制作工艺，还能取得优异的传感器功能。\n\n附图说明\n\n[0033]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0034]图1是本申请一实施例提供的一种滤光准直复合膜的第一种结构示意图；\n\n[0035]图2是本申请一实施例提供的一种滤光膜层的结构示意图；\n\n[0036]图3是本申请一实施例提供的一种滤光准直复合膜的第二种结构示意图；\n\n[0037]图4是本申请一实施例提供的一种滤光准直复合膜的第三种结构示意图；\n\n[0038]图5是本申请一实施例提供的一种显示装置的第一种结构示意图；\n\n[0039]图6是本申请一实施例提供的一种显示装置的第二种结构示意图；\n\n[0040]图7是本申请一实施例提供的一种滤光准直复合膜的制造方法的制造步骤的示意图。\n\n具体实施方式\n\n[0041]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0042]本申请实施例提供了一种滤光准直复合膜，包括：滤光膜层，用于使特定波长的光透过；第一棱镜膜层，设置于滤光膜的上，第一棱镜膜层包括多个第一棱镜结构；第二棱镜膜层，包括透光层和多个第二棱镜结构，第二棱镜结构设置于透光层远离滤光膜层的一侧；准直层，设置于第一棱镜膜层和第二棱镜膜层之间，准直层包括准直孔，准直层用于收敛通过准直孔的光线。\n\n[0043]本申请实施例提供了一种滤光准直复合膜及其制造方法、显示装置。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0044]实施例一、\n\n[0045]请参阅图1、图2，图1为本申请实施例提供的一种滤光准直复合膜100的第一种结构示意图，图2为本申请实施例提供的一种滤光膜层11的结构示意图。\n\n[0046]在本申请实施例中，提供了一种滤光准直复合膜100，滤光准直复合膜100包括：滤光膜层11、第一棱镜膜层12、第二棱镜膜层14、准直层13。滤光膜层11用于使特定波长的光透过；第一棱镜膜层12设置于滤光膜层上，第一棱镜膜层12包括多个第一棱镜结构；第二棱镜膜层14包括透光层141和多个第二棱镜结构142，第二棱镜结构142设置于透光层141远离滤光膜层11的一侧；准直层13设置于滤光膜层11和第二棱镜膜层14之间，准直层13包括准直孔131，准直层13用于收敛通过准直孔131的光线。\n\n[0047]具体的，滤光膜层11可以用于使红外波长的光透过。\n\n[0048]具体的，滤光膜层11在380-780nm波长范围的光线的具有高反射率和低透过率，例如在380-780nm波长范围的光线的反射率大于98％，在380-780nm波长范围的光线的透过率小于2％。\n\n[0049]具体的，第一棱镜结构12和第二棱镜结构142为聚光单元，聚光单元可以为凸透镜、六边凸透镜等。\n\n[0050]具体的，优选的，第一棱镜结构12和第二棱镜结构142的数量与准直孔131的数量对应，例如，第一棱镜结构12和第二棱镜结构142的数量与准直孔131的数量一一对应。\n\n[0051]具体的，优选的，第一棱镜结构12和第二棱镜结构142的聚光焦点与准直孔131的视场角对应。例如，第一棱镜结构12和第二棱镜结构142的聚光焦点与准直孔131的视场角的中心在同一条直线上。\n\n[0052]具体的，第一棱镜结构12和第二棱镜结构142的尺寸长度为15μm-25μm范围内。\n\n[0053]在一些实施例中，请参阅图2，滤光膜层11包括交替层叠设置的第一材料膜层111和第二材料膜层112，第一材料膜层111和第二材料膜层112满足如下公式：\n\n[0054]λ＝2(n1*d1+n2*d2)\n\n[0055]λ为可见光的波长，n1为第一材料膜层111的折射率，n2为第二材料膜层112的折射率，d1为第一材料膜层111的厚度，d2为第二材料膜层112的厚度。\n\n[0056]具体的，滤光膜层11包括交替层叠设置的第一材料膜层111与第二材料膜层112，第一材料膜层111可以具有一层以上的数量，第二材料膜层112可以具有一层以上的数量。d1为第一材料膜层111某一层的厚度，d2为第二材料膜层112某一层的厚度。\n\n[0057]在一些实施例中，n1/n2的范围为1.1～1.3。\n\n[0058]具体的，n1/n2的范围为1.1～1.3内时，滤光膜层11可以很好的反射可见光，而透过红外光。\n\n[0059]优选的，n1/n2为1.17。\n\n[0060]在一些实施例中，准直孔131的孔深h10与孔宽d10的比值大于或等于6：1，准直孔131的孔深h10与孔宽d10的比值小于或等于10：1。\n\n[0061]具体的，准直孔131的孔深h10与孔宽d10的比值设定在6：1-10:1范围时，准直孔可以对通过其的光线起到很好的收敛作用。\n\n[0062]在本申请实施例中，通过将滤光膜层、第一棱镜膜层、第二棱镜膜层和准直层制作为一整体，具有结构简单，厚度轻薄的效果，使用在显示装置中时，只需要贴附在显示装置之中。\n\n[0063]实施例二、\n\n[0064]本实施例与上述实施例相同或相似，不同之处准直层13的结构不同。\n\n[0065]请参阅图3、图4，图3为本申请实施例提供的一种滤光准直复合膜100的第二种结构示意图，图4为本申请实施例提供的一种滤光准直复合膜100的第三种结构示意图。\n\n[0066]在一些实施例中，准直层13包括基底136，以及设置于基底136两侧的第一子准直层137和第二子准直层138，第一子准直层137包括第一准直孔1371，第二子准直层138包括第二准直孔1381。\n\n[0067]具体的，准直层13包括一层以上的多层准直孔结构。\n\n[0068]图3中举例示意了准直层13包括第一子准直层137和第二子准直层138，基底136为透光材料，第一子准直层137收敛通过第一准直孔1371后的光线，这部分光线再次通过第二子准直层138被第二准直孔1381再次收敛。\n\n[0069]具体的，第一子准直层137包括多个第一挡墙1372和第一挡墙1372之间的第一准直孔1371，第一挡墙1372的材料可采用黑色吸光的有机材料，采用印刷有机物等工艺形成微米级的第一挡墙1372。\n\n[0070]具体的，第二子准直层138包括多个第二挡墙1382和第二挡墙1382之间的第二准直孔1381，第二挡墙1382的材料可采用黑色吸光的有机材料，采用印刷有机物等工艺形成微米级的第二挡墙1382。\n\n[0071]在一些实施例中，第一子准直层137设置于滤光膜层11和基底136之间，第二子准直层138设置于基底136和第二棱镜膜层14之间，第一准直孔1371的孔深h11与孔宽d11的比值大于或等于第二准直孔的1381的孔深h12与孔宽d12的比值。\n\n[0072]具体的，第一准直孔1371和第二准直孔1381为一一对应设置，第一准直孔1371在基底136上的正投影覆盖第二准直孔1381在基底136上的正投影。\n\n[0073]具体的，第一准直孔1371的中心和对应的第二准直孔1381的中心重叠或在一条直线上。\n\n[0074]第一准直孔1371的孔深h11与孔宽d11的比值大于或等于第二准直孔1381的孔深h12与孔宽d12的比值，使得被第一准直孔1371收敛过后的光线可以继续被第二准直孔1381收敛，从而使得从第二准直孔1381出射的光线为准直光线。\n\n[0075]具体的，图3示意了第一准直孔1371的孔深h11与孔宽d11的比值等于第二准直孔1381的孔深h12与孔宽d12的比值，优选的第一准直孔1371的孔深h11与孔宽d11的比值为6：1，可以起到非常好的收敛光线和准直功能；图4示意了第一准直孔1371的孔深h11与孔宽d11的比值大于第二准直孔1381的孔深h12与孔宽d12的比值，优选第一准直孔1371的孔深h11与孔宽d11的比值为6:1，第二准直孔1381的孔深h12与孔宽d12的比值为10:1，可以起到非常好的准直功能。\n\n[0076]在本申请实施例中，优化了准直层13的结构，可以更好的收敛通过准直层13的光线的角度。通过将滤光膜层、第一棱镜膜层、第二棱镜膜层和准直层制作为一整体，具有结构简单，厚度轻薄的效果，使用在显示装置中时，只需要贴附在显示装置之中。\n\n[0077]实施例三、\n\n[0078]请参阅图5、图6，图5为本申请实施例提供的一种显示装置200的第一种结构示意图，图6为本申请实施例提供的一种显示装置200的第二种结构示意图。\n\n[0079]本申请实施例提供了一种显示装置200，显示装置200包括如上述实施例所述的任一项的滤光准直复合膜100，显示装置200还包括：显示面板20、导光构件30、信号发射器50、传感器阵列40。导光构件30设置于显示面板20的显示侧；信号发射器50设置于导光构件30的至少一边缘，且信号发射器50发出的调制光在导光构件30内发生全反射；传感器阵列40设置于显示面板20远离导光构件30的一侧，用于接收识别信号发射器50发出的调制光；其中，滤光准直复合膜100设置于显示面板20与传感器阵列40之间。\n\n[0080]具体的，显示面板可以为液晶显示面板、有机发光显示面板(OLED)、微型发光二极管显示面板(Micro LED显示面板、MinLED显示面板、LED显示面板)等，显示面板的类型在此不做限定。\n\n[0081]具体的，信号发射器50可以为实现传感功能的调制光的光源，例如红外发射光源等。\n\n[0082]具体的，导光构件30可以将信号发射器50发出的调制光进行全反射，使得调制光到达导光构件30的各个部位。\n\n[0083]具体的，导光构件30可以将信号发射器50发出的调制光进行全反射，是指调制光在导光构件30内一部分发生全反射，一部分从导光构件30的上表面出射。\n\n[0084]具体的，导光构件30的上表面是指导光构件30远离显示面板20的表面，导光构件30的下表面是指导光构件30面向显示面板20的表面。\n\n[0085]具体的，导光构件30包括盖板或显示装置200的其他膜层或显示装置200上新增的结构等能够实现导光性能的构件，本实施例以导光构件30以盖板(保护盖板，coverglass，CG)为例说明。\n\n[0086]具体的，显示面板20的显示侧是指显示图像的一侧。\n\n[0087]具体的，传感器阵列40包括衬底41和多个传感器单元42，传感器阵列40可以为指纹识别传感器，传感器阵列40的类型和功能在此不做限定。\n\n[0088]具体的，一个传感器单元42可以对应一个或多个第一棱镜结构12，一个传感器单元42可以对应一个或多个第二棱镜结构142。\n\n[0089]具体的，在此以传感器阵列40为指纹识别传感器进行工作的过程进行说明。信号发射器50发出红外光线，红外光线在导光构件30内发生全反射到达显示装置200的各个部位的表面，手指碰触导光构件30的表面或显示装置200的表面时，红外光被手指反射，手指上指纹的脊和谷的反射信息不同，手指反射的红外光通过显示面板20到达滤光准直复合膜100，此时被手指反射的光线包括一部分红外光和一部分可见光，可见光被滤光膜层11反射或拦阻，然后手指反射的红外光被准直层13收敛，手指反射的红外光同时也被第一棱镜层12和第二棱镜层14汇聚，使得到达传感器阵列40的红外光为准直光，传感器单元42识别手指反射的红外光所携带的指纹信息，从而判定是否解锁。\n\n[0090]具体的，第一棱镜结构12和第二棱镜结构用于汇聚调制光、收敛调制光的作用，使得在传感器单元42内成像或识别指纹信息更清晰。\n\n[0091]具体的，本申请实施例的显示装置200可以实现显示面板的大面积的传感器功能，甚至全屏的传感器功能，例如大面积的指纹识别功能或全屏的指纹识别功能。\n\n[0092]在一些实施例中，如图5所示，显示面板20为液晶显示面板时，显示装置200还包括导光板60，导光板60设置于显示面板20远离导光构件30的一侧，滤光准直复合膜100设置于导光板60远离显示面板20的一侧。\n\n[0093]具体的，滤光准直复合膜100设置于导光板60远离显示面板20的一侧，这样60滤光准直复合膜100就不会对导光板的导光和匀光功能产生影响。\n\n[0094]在一些实施例中，显示面板20为液晶显示面板时，显示装置200还包括背光源70，背光源70设置于导光板60的任一侧端的外侧，滤光准直复合膜100还用作背光源70的反射层。\n\n[0095]具体的，本申请实施例的结构用在液晶显示面板中时，较为适合侧入射式的背光源。\n\n[0096]具体的，滤光准直复合膜100可以反射可见光，因此100还可以用作背光源70的反射层，避免了额外增加反射层，同时防止额外增加的反射层阻挡信号发射器50发出的调制光到达传感器阵列40，可以同时实现优异的显示和大面积传感器功能。\n\n[0097]在一些实施例中，如图6所示，显示面板20为有机发光显示面板，显示面板20包括基板21和设置于基板21上的多个发光器件22，以及设置于发光器件22上的封装层23。\n\n[0098]在本申请实施例中，提供了一种显示装置200，可以实现显示面板的大面积的传感器功能，甚至全屏的传感器功能，例如大面积的指纹识别功能或全屏的指纹识别功能。\n\n[0099]此外，由于准直层13的准直孔的尺寸、第一棱镜结构12的尺寸、第二棱镜结构142的尺寸均为微米级别，而传感器单元42的尺寸相对较大，因此不需要将滤光准直复合膜100与传感器单元42进行对位，因此本提案的显示装置200结构简单，组装工艺简单。\n\n[0100]此外，显示面板20为液晶显示面板时，滤光准直复合膜100还用作背光源70的反射层，滤光准直复合膜100代替了背光的反射层，有助于显示装置200的轻薄化，节省了成本。\n\n[0101]此外，将滤光准直复合膜100设置在显示面板20和传感器阵列40之间，滤光准直复合膜100不会干扰影响到显示面板20显示图像，同时准直复合膜100可以反射或阻挡可见光达到传感器阵列40，从而提升传感器阵列40的工作性能，例如传感器阵列40为指纹识别传感器时，可以提升指纹识别功能的准确性。\n\n[0102]实施例四、\n\n[0103]请参阅图7，图7为本申请实施例提供的一种滤光准直复合膜的制造方法的制造步骤的示意图，滤光准直复合膜的制造方法包括制造步骤：步骤S100、步骤S200、步骤S300、步骤S400、步骤S500。上述实施例中任一项的滤光准直复合膜可以按照本实施例的滤光准直复合膜的制造方法来进行制造。\n\n[0104]步骤S100：提供一滤光膜层，滤光膜层可以使特定波长的光透过。\n\n[0105]步骤S200：在滤光膜层的一侧表面形成第一棱镜膜层，第一棱镜膜层包括多个第一棱镜结构。\n\n[0106]具体的，可以采用纳米或微米压印技术在滤光膜层11的表面制作出第一棱镜结构12。\n\n[0107]具体的，采用高折射率、高透过率的材料形成在滤光膜层上以待制作第一棱镜结构12，高折射率材料的折射率大于1.6，高透过率材料的透过率大于90％。\n\n[0108]具体的，可以在滤光膜层的一侧表面形成亚克力等透明树脂，然后采用纳米或微米压印技术制作出第一棱镜结构12。\n\n[0109]步骤S300：在滤光膜层的另一侧表面形成准直层。\n\n[0110]具体的，准直层13包括多个挡墙132和挡墙132之间的准直孔131，挡墙132的材料可采用黑色吸光的有机材料，采用印刷有机物等工艺将微米级的挡墙132印刷在滤光膜层11的另一侧表面，相邻的挡墙132之间形成准直孔131。\n\n[0111]步骤S400：提供第二棱镜膜层，第二棱镜膜层包括透光层和设置于透光层上的第二棱镜结构。\n\n[0112]具体的，透光层141为透明材料，可以在透光层141的一侧表面形成亚克力等透明树脂，然后采用纳米或微米压印技术制作出第二棱镜结构142。\n\n[0113]步骤S500：将第二棱镜膜层的透光层与滤光膜层上的准直层贴合。\n\n[0114]具体的，将第二棱镜膜层14的透光层141与准直层贴合。\n\n[0115]在本申请实施例中，通过将滤光膜层、第一棱镜膜层、第二棱镜膜层和准直层制作为一整体，具有结构简单，制作工艺简单，厚度轻薄的效果，使用在显示装置中时，只需要贴附在显示装置之中。\n\n[0116]以上对本申请实施例所提供的一种滤光准直复合膜及其制造方法、显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示领域，具体涉及一种滤光准直复合膜及其制造方法、显示装置。\n\n背景技术\n\n[0002]显示面板已经广泛用于人们生活中，例如手机、电脑等的显示屏幕。随着显示技术的发展以及人们对显示技术的进步要求，人们对显示面板的显示品质要求越来越高，已经开发了在显示面板的背侧设置传感器的显示装置，例如在显示面板的背侧设置指纹识别传感器，设置传感器装置时，需要设置多个膜层，包括单独设置的光滤过层、单独制作的准直层，单独制作或贴附的棱镜层。\n\n[0003]然而，当前在显示面板的背侧设置传感器的显示装置中，单独设置的光滤过层、单独制作的准直层，单独制作或贴附的棱镜层，使得显示装置厚度较厚，不利于轻薄化，且制作工艺复杂。\n\n发明内容\n\n[0004]本申请实施例提供了一种滤光准直复合膜及其制造方法、显示装置，可以解决当前在显示面板的背侧设置传感器的显示装置中，存在显示装置厚度较厚，不利于轻薄化，且制作工艺复杂的问题。\n\n[0005]本申请实施例提供了一种滤光准直复合膜，包括：\n\n[0006]滤光膜层，用于使特定波长的光透过；\n\n[0007]第一棱镜膜层，设置于所述滤光膜层上，所述第一棱镜膜层包括多个第一棱镜结构；\n\n[0008]第二棱镜膜层，包括透光层和多个第二棱镜结构，所述第二棱镜结构设置于所述透光层远离所述滤光膜层的一侧；\n\n[0009]准直层，设置于所述滤光膜层和所述第二棱镜膜层之间，所述准直层包括准直孔，所述准直层用于收敛通过所述准直孔的光线。\n\n[0010]可选的，在本申请的一些实施例中，所述滤光膜层包括交替层叠设置的第一材料膜层和第二材料膜层，所述第一材料膜层和所述第二材料膜层满足如下公式：\n\n[0011]λ＝2(n1*d1+n2*d2)\n\n[0012]λ为可见光的波长，n1为所述第一材料膜层的折射率，n2为所述第二材料膜层的折射率，d1为所述第一材料膜层的厚度，d2为所述第二材料膜层的厚度。\n\n[0013]可选的，在本申请的一些实施例中，n1/n2的范围为1.1～1.3。\n\n[0014]可选的，在本申请的一些实施例中，所述准直孔的孔深与孔宽的比值大于或等于6：1，所述准直孔的孔深与孔宽的比值小于或等于10：1。\n\n[0015]可选的，在本申请的一些实施例中，所述准直层包括基底，以及设置于所述基底两侧的第一子准直层和第二子准直层，所述第一子准直层包括第一准直孔，所述第二子准直层包括第二准直孔。\n\n[0016]可选的，在本申请的一些实施例中，所述第一子准直层设置于所述滤光膜层和所述基底之间，所述第二子准直层设置于所述基底和所述第二棱镜膜层之间，所述第一准直孔的孔深与孔宽的比值大于或等于所述第二准直孔的孔深与孔宽的比值。\n\n[0017]相应的，本申请实施例还提供了一种显示装置，包括如上述任一项所述的滤光准直复合膜层，所述显示装置还包括：\n\n[0018]显示面板；\n\n[0019]导光构件，设置于所述显示面板的显示侧；\n\n[0020]信号发射器，设置于所述导光构件的至少一边缘，且所述信号发射器发出的调制光在所述导光构件内发生全反射；以及\n\n[0021]传感器阵列，设置于所述显示面板远离所述导光构件的一侧，用于接收识别所述信号发射器发出的调制光；\n\n[0022]其中，所述滤光准直复合膜，设置于所述显示面板与所述传感器阵列之间。\n\n[0023]可选的，在本申请的一些实施例中，所述显示面板为液晶显示面板，所述显示装置还包括导光板，所述导光板设置于所述显示面板远离所述导光构件的一侧，所述滤光准直复合膜层设置于所述导光板远离所述显示面板的一侧。\n\n[0024]可选的，在本申请的一些实施例中，所述显示装置还包括背光源，所述背光源设置于所述导光板的任一侧端的外侧，所述滤光准直复合膜还用作所述背光源的反射层。\n\n[0025]可选的，在本申请的一些实施例中，所述显示面板包括有机发光显示面板、微型发光二极管显示面板中的至少一种。\n\n[0026]相应的，本申请实施例还提供了一种滤光准直复合膜的制造方法，包括如下制造步骤：\n\n[0027]步骤S100：提供一滤光膜层，滤光膜层可以使特定波长的光透过；\n\n[0028]步骤S200：在所述滤光膜层的一侧表面形成第一棱镜膜层，所述第一棱镜膜层包括多个第一棱镜结构；\n\n[0029]步骤S300：在所述滤光膜层的另一侧表面形成准直层；\n\n[0030]步骤S400：提供第二棱镜膜层，所述第二棱镜膜层包括透光层和设置于所述透光层上的第二棱镜结构；\n\n[0031]步骤S500：将所述第二棱镜膜层的透光层与所述滤光膜层上的准直层贴合。\n\n[0032]本申请实施例中，提供了一种滤光准直复合膜及其制造方法、显示装置，滤光准直复合膜包括一体结构的滤光膜层、第一棱镜膜层、第二棱镜膜层和准直层，将滤光膜层、第一棱镜膜层、第二棱镜膜层和准直层制作为一整体，在显示装置中直接贴附使用即可，不需要单独设置光滤过层，不需要单独制作准直层，不需要单独制作或贴附的棱镜层，可以降低显示装置厚度较厚，利于轻薄化，且简化了制作工艺，还能取得优异的传感器功能。\n\n附图说明\n\n[0033]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0034]图1是本申请一实施例提供的一种滤光准直复合膜的第一种结构示意图；\n\n[0035]图2是本申请一实施例提供的一种滤光膜层的结构示意图；\n\n[0036]图3是本申请一实施例提供的一种滤光准直复合膜的第二种结构示意图；\n\n[0037]图4是本申请一实施例提供的一种滤光准直复合膜的第三种结构示意图；\n\n[0038]图5是本申请一实施例提供的一种显示装置的第一种结构示意图；\n\n[0039]图6是本申请一实施例提供的一种显示装置的第二种结构示意图；\n\n[0040]图7是本申请一实施例提供的一种滤光准直复合膜的制造方法的制造步骤的示意图。\n\n具体实施方式\n\n[0041]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0042]本申请实施例提供了一种滤光准直复合膜，包括：滤光膜层，用于使特定波长的光透过；第一棱镜膜层，设置于滤光膜的上，第一棱镜膜层包括多个第一棱镜结构；第二棱镜膜层，包括透光层和多个第二棱镜结构，第二棱镜结构设置于透光层远离滤光膜层的一侧；准直层，设置于第一棱镜膜层和第二棱镜膜层之间，准直层包括准直孔，准直层用于收敛通过准直孔的光线。\n\n[0043]本申请实施例提供了一种滤光准直复合膜及其制造方法、显示装置。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0044]实施例一、\n\n[0045]请参阅图1、图2，图1为本申请实施例提供的一种滤光准直复合膜100的第一种结构示意图，图2为本申请实施例提供的一种滤光膜层11的结构示意图。\n\n[0046]在本申请实施例中，提供了一种滤光准直复合膜100，滤光准直复合膜100包括：滤光膜层11、第一棱镜膜层12、第二棱镜膜层14、准直层13。滤光膜层11用于使特定波长的光透过；第一棱镜膜层12设置于滤光膜层上，第一棱镜膜层12包括多个第一棱镜结构；第二棱镜膜层14包括透光层141和多个第二棱镜结构142，第二棱镜结构142设置于透光层141远离滤光膜层11的一侧；准直层13设置于滤光膜层11和第二棱镜膜层14之间，准直层13包括准直孔131，准直层13用于收敛通过准直孔131的光线。\n\n[0047]具体的，滤光膜层11可以用于使红外波长的光透过。\n\n[0048]具体的，滤光膜层11在380-780nm波长范围的光线的具有高反射率和低透过率，例如在380-780nm波长范围的光线的反射率大于98％，在380-780nm波长范围的光线的透过率小于2％。\n\n[0049]具体的，第一棱镜结构12和第二棱镜结构142为聚光单元，聚光单元可以为凸透镜、六边凸透镜等。\n\n[0050]具体的，优选的，第一棱镜结构12和第二棱镜结构142的数量与准直孔131的数量对应，例如，第一棱镜结构12和第二棱镜结构142的数量与准直孔131的数量一一对应。\n\n[0051]具体的，优选的，第一棱镜结构12和第二棱镜结构142的聚光焦点与准直孔131的视场角对应。例如，第一棱镜结构12和第二棱镜结构142的聚光焦点与准直孔131的视场角的中心在同一条直线上。\n\n[0052]具体的，第一棱镜结构12和第二棱镜结构142的尺寸长度为15μm-25μm范围内。\n\n[0053]在一些实施例中，请参阅图2，滤光膜层11包括交替层叠设置的第一材料膜层111和第二材料膜层112，第一材料膜层111和第二材料膜层112满足如下公式：\n\n[0054]λ＝2(n1*d1+n2*d2)\n\n[0055]λ为可见光的波长，n1为第一材料膜层111的折射率，n2为第二材料膜层112的折射率，d1为第一材料膜层111的厚度，d2为第二材料膜层112的厚度。\n\n[0056]具体的，滤光膜层11包括交替层叠设置的第一材料膜层111与第二材料膜层112，第一材料膜层111可以具有一层以上的数量，第二材料膜层112可以具有一层以上的数量。d1为第一材料膜层111某一层的厚度，d2为第二材料膜层112某一层的厚度。\n\n[0057]在一些实施例中，n1/n2的范围为1.1～1.3。\n\n[0058]具体的，n1/n2的范围为1.1～1.3内时，滤光膜层11可以很好的反射可见光，而透过红外光。\n\n[0059]优选的，n1/n2为1.17。\n\n[0060]在一些实施例中，准直孔131的孔深h10与孔宽d10的比值大于或等于6：1，准直孔131的孔深h10与孔宽d10的比值小于或等于10：1。\n\n[0061]具体的，准直孔131的孔深h10与孔宽d10的比值设定在6：1-10:1范围时，准直孔可以对通过其的光线起到很好的收敛作用。\n\n[0062]在本申请实施例中，通过将滤光膜层、第一棱镜膜层、第二棱镜膜层和准直层制作为一整体，具有结构简单，厚度轻薄的效果，使用在显示装置中时，只需要贴附在显示装置之中。\n\n[0063]实施例二、\n\n[0064]本实施例与上述实施例相同或相似，不同之处准直层13的结构不同。\n\n[0065]请参阅图3、图4，图3为本申请实施例提供的一种滤光准直复合膜100的第二种结构示意图，图4为本申请实施例提供的一种滤光准直复合膜100的第三种结构示意图。\n\n[0066]在一些实施例中，准直层13包括基底136，以及设置于基底136两侧的第一子准直层137和第二子准直层138，第一子准直层137包括第一准直孔1371，第二子准直层138包括第二准直孔1381。\n\n[0067]具体的，准直层13包括一层以上的多层准直孔结构。\n\n[0068]图3中举例示意了准直层13包括第一子准直层137和第二子准直层138，基底136为透光材料，第一子准直层137收敛通过第一准直孔1371后的光线，这部分光线再次通过第二子准直层138被第二准直孔1381再次收敛。\n\n[0069]具体的，第一子准直层137包括多个第一挡墙1372和第一挡墙1372之间的第一准直孔1371，第一挡墙1372的材料可采用黑色吸光的有机材料，采用印刷有机物等工艺形成微米级的第一挡墙1372。\n\n[0070]具体的，第二子准直层138包括多个第二挡墙1382和第二挡墙1382之间的第二准直孔1381，第二挡墙1382的材料可采用黑色吸光的有机材料，采用印刷有机物等工艺形成微米级的第二挡墙1382。\n\n[0071]在一些实施例中，第一子准直层137设置于滤光膜层11和基底136之间，第二子准直层138设置于基底136和第二棱镜膜层14之间，第一准直孔1371的孔深h11与孔宽d11的比值大于或等于第二准直孔的1381的孔深h12与孔宽d12的比值。\n\n[0072]具体的，第一准直孔1371和第二准直孔1381为一一对应设置，第一准直孔1371在基底136上的正投影覆盖第二准直孔1381在基底136上的正投影。\n\n[0073]具体的，第一准直孔1371的中心和对应的第二准直孔1381的中心重叠或在一条直线上。\n\n[0074]第一准直孔1371的孔深h11与孔宽d11的比值大于或等于第二准直孔1381的孔深h12与孔宽d12的比值，使得被第一准直孔1371收敛过后的光线可以继续被第二准直孔1381收敛，从而使得从第二准直孔1381出射的光线为准直光线。\n\n[0075]具体的，图3示意了第一准直孔1371的孔深h11与孔宽d11的比值等于第二准直孔1381的孔深h12与孔宽d12的比值，优选的第一准直孔1371的孔深h11与孔宽d11的比值为6：1，可以起到非常好的收敛光线和准直功能；图4示意了第一准直孔1371的孔深h11与孔宽d11的比值大于第二准直孔1381的孔深h12与孔宽d12的比值，优选第一准直孔1371的孔深h11与孔宽d11的比值为6:1，第二准直孔1381的孔深h12与孔宽d12的比值为10:1，可以起到非常好的准直功能。\n\n[0076]在本申请实施例中，优化了准直层13的结构，可以更好的收敛通过准直层13的光线的角度。通过将滤光膜层、第一棱镜膜层、第二棱镜膜层和准直层制作为一整体，具有结构简单，厚度轻薄的效果，使用在显示装置中时，只需要贴附在显示装置之中。\n\n[0077]实施例三、\n\n[0078]请参阅图5、图6，图5为本申请实施例提供的一种显示装置200的第一种结构示意图，图6为本申请实施例提供的一种显示装置200的第二种结构示意图。\n\n[0079]本申请实施例提供了一种显示装置200，显示装置200包括如上述实施例所述的任一项的滤光准直复合膜100，显示装置200还包括：显示面板20、导光构件30、信号发射器50、传感器阵列40。导光构件30设置于显示面板20的显示侧；信号发射器50设置于导光构件30的至少一边缘，且信号发射器50发出的调制光在导光构件30内发生全反射；传感器阵列40设置于显示面板20远离导光构件30的一侧，用于接收识别信号发射器50发出的调制光；其中，滤光准直复合膜100设置于显示面板20与传感器阵列40之间。\n\n[0080]具体的，显示面板可以为液晶显示面板、有机发光显示面板(OLED)、微型发光二极管显示面板(Micro LED显示面板、MinLED显示面板、LED显示面板)等，显示面板的类型在此不做限定。\n\n[0081]具体的，信号发射器50可以为实现传感功能的调制光的光源，例如红外发射光源等。\n\n[0082]具体的，导光构件30可以将信号发射器50发出的调制光进行全反射，使得调制光到达导光构件30的各个部位。\n\n[0083]具体的，导光构件30可以将信号发射器50发出的调制光进行全反射，是指调制光在导光构件30内一部分发生全反射，一部分从导光构件30的上表面出射。\n\n[0084]具体的，导光构件30的上表面是指导光构件30远离显示面板20的表面，导光构件30的下表面是指导光构件30面向显示面板20的表面。\n\n[0085]具体的，导光构件30包括盖板或显示装置200的其他膜层或显示装置200上新增的结构等能够实现导光性能的构件，本实施例以导光构件30以盖板(保护盖板，coverglass，CG)为例说明。\n\n[0086]具体的，显示面板20的显示侧是指显示图像的一侧。\n\n[0087]具体的，传感器阵列40包括衬底41和多个传感器单元42，传感器阵列40可以为指纹识别传感器，传感器阵列40的类型和功能在此不做限定。\n\n[0088]具体的，一个传感器单元42可以对应一个或多个第一棱镜结构12，一个传感器单元42可以对应一个或多个第二棱镜结构142。\n\n[0089]具体的，在此以传感器阵列40为指纹识别传感器进行工作的过程进行说明。信号发射器50发出红外光线，红外光线在导光构件30内发生全反射到达显示装置200的各个部位的表面，手指碰触导光构件30的表面或显示装置200的表面时，红外光被手指反射，手指上指纹的脊和谷的反射信息不同，手指反射的红外光通过显示面板20到达滤光准直复合膜100，此时被手指反射的光线包括一部分红外光和一部分可见光，可见光被滤光膜层11反射或拦阻，然后手指反射的红外光被准直层13收敛，手指反射的红外光同时也被第一棱镜层12和第二棱镜层14汇聚，使得到达传感器阵列40的红外光为准直光，传感器单元42识别手指反射的红外光所携带的指纹信息，从而判定是否解锁。\n\n[0090]具体的，第一棱镜结构12和第二棱镜结构用于汇聚调制光、收敛调制光的作用，使得在传感器单元42内成像或识别指纹信息更清晰。\n\n[0091]具体的，本申请实施例的显示装置200可以实现显示面板的大面积的传感器功能，甚至全屏的传感器功能，例如大面积的指纹识别功能或全屏的指纹识别功能。\n\n[0092]在一些实施例中，如图5所示，显示面板20为液晶显示面板时，显示装置200还包括导光板60，导光板60设置于显示面板20远离导光构件30的一侧，滤光准直复合膜100设置于导光板60远离显示面板20的一侧。\n\n[0093]具体的，滤光准直复合膜100设置于导光板60远离显示面板20的一侧，这样60滤光准直复合膜100就不会对导光板的导光和匀光功能产生影响。\n\n[0094]在一些实施例中，显示面板20为液晶显示面板时，显示装置200还包括背光源70，背光源70设置于导光板60的任一侧端的外侧，滤光准直复合膜100还用作背光源70的反射层。\n\n[0095]具体的，本申请实施例的结构用在液晶显示面板中时，较为适合侧入射式的背光源。\n\n[0096]具体的，滤光准直复合膜100可以反射可见光，因此100还可以用作背光源70的反射层，避免了额外增加反射层，同时防止额外增加的反射层阻挡信号发射器50发出的调制光到达传感器阵列40，可以同时实现优异的显示和大面积传感器功能。\n\n[0097]在一些实施例中，如图6所示，显示面板20为有机发光显示面板，显示面板20包括基板21和设置于基板21上的多个发光器件22，以及设置于发光器件22上的封装层23。\n\n[0098]在本申请实施例中，提供了一种显示装置200，可以实现显示面板的大面积的传感器功能，甚至全屏的传感器功能，例如大面积的指纹识别功能或全屏的指纹识别功能。\n\n[0099]此外，由于准直层13的准直孔的尺寸、第一棱镜结构12的尺寸、第二棱镜结构142的尺寸均为微米级别，而传感器单元42的尺寸相对较大，因此不需要将滤光准直复合膜100与传感器单元42进行对位，因此本提案的显示装置200结构简单，组装工艺简单。\n\n[0100]此外，显示面板20为液晶显示面板时，滤光准直复合膜100还用作背光源70的反射层，滤光准直复合膜100代替了背光的反射层，有助于显示装置200的轻薄化，节省了成本。\n\n[0101]此外，将滤光准直复合膜100设置在显示面板20和传感器阵列40之间，滤光准直复合膜100不会干扰影响到显示面板20显示图像，同时准直复合膜100可以反射或阻挡可见光达到传感器阵列40，从而提升传感器阵列40的工作性能，例如传感器阵列40为指纹识别传感器时，可以提升指纹识别功能的准确性。\n\n[0102]实施例四、\n\n[0103]请参阅图7，图7为本申请实施例提供的一种滤光准直复合膜的制造方法的制造步骤的示意图，滤光准直复合膜的制造方法包括制造步骤：步骤S100、步骤S200、步骤S300、步骤S400、步骤S500。上述实施例中任一项的滤光准直复合膜可以按照本实施例的滤光准直复合膜的制造方法来进行制造。\n\n[0104]步骤S100：提供一滤光膜层，滤光膜层可以使特定波长的光透过。\n\n[0105]步骤S200：在滤光膜层的一侧表面形成第一棱镜膜层，第一棱镜膜层包括多个第一棱镜结构。\n\n[0106]具体的，可以采用纳米或微米压印技术在滤光膜层11的表面制作出第一棱镜结构12。\n\n[0107]具体的，采用高折射率、高透过率的材料形成在滤光膜层上以待制作第一棱镜结构12，高折射率材料的折射率大于1.6，高透过率材料的透过率大于90％。\n\n[0108]具体的，可以在滤光膜层的一侧表面形成亚克力等透明树脂，然后采用纳米或微米压印技术制作出第一棱镜结构12。\n\n[0109]步骤S300：在滤光膜层的另一侧表面形成准直层。\n\n[0110]具体的，准直层13包括多个挡墙132和挡墙132之间的准直孔131，挡墙132的材料可采用黑色吸光的有机材料，采用印刷有机物等工艺将微米级的挡墙132印刷在滤光膜层11的另一侧表面，相邻的挡墙132之间形成准直孔131。\n\n[0111]步骤S400：提供第二棱镜膜层，第二棱镜膜层包括透光层和设置于透光层上的第二棱镜结构。\n\n[0112]具体的，透光层141为透明材料，可以在透光层141的一侧表面形成亚克力等透明树脂，然后采用纳米或微米压印技术制作出第二棱镜结构142。\n\n[0113]步骤S500：将第二棱镜膜层的透光层与滤光膜层上的准直层贴合。\n\n[0114]具体的，将第二棱镜膜层14的透光层141与准直层贴合。\n\n[0115]在本申请实施例中，通过将滤光膜层、第一棱镜膜层、第二棱镜膜层和准直层制作为一整体，具有结构简单，制作工艺简单，厚度轻薄的效果，使用在显示装置中时，只需要贴附在显示装置之中。\n\n[0116]以上对本申请实施例所提供的一种滤光准直复合膜及其制造方法、显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10990, 24044, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种显示面板及拼接显示面板。\n\n背景技术\n\n[0002]现行的拼接显示技术，为了满足显示面板相互拼接、协同显示的需求，多采用窄化边框的方法，通过将显示面板的左右边框极致窄化，甚至将下边框中的部分功能单元集成在显示面板的显示区中，来获得非常狭窄的边框宽度，最后将这种特殊的小尺寸显示面板拼接呈大尺寸显示面板，达到拼接显示的目的。\n\n[0003]由于显示面板下边框位置存在大量的扇出(fanout)电路、绑定焊盘(bondingpad)的相关设计，使得显示面板的下边框宽度较另外三边都更大，且难以完全消除，使得各个小尺寸显示面板在拼接位置会出现明显的“黑线”，难以达成完全无缝拼接的目的。\n\n[0004]综上所述，现有拼接显示面板存在拼接位置处出现明显的缝隙的问题。故，有必要提供一种显示面板及电子装置来改善这一缺陷。\n\n发明内容\n\n[0005]本申请实施例提供一种显示面板及拼接显示面板，用于解决现有拼接显示面板存在的拼接位置处出现明显的缝隙的问题。\n\n[0006]本申请实施例提供一种显示面板，包括：\n\n[0007]衬底基板，具有第一侧和与所述第一侧相对设置的第二侧；\n\n[0008]信号线，设置于所述衬底基板的所述第一侧上；\n\n[0009]绑定焊盘，设置于所述衬底基板的所述第二侧上；以及\n\n[0010]过孔，在所述衬底基板的厚度方向上贯穿所述衬底基板，所述信号线通过所述过孔与所述绑定焊盘电性连接。\n\n[0011]根据本申请一实施例，所述显示面板还包括多个显示单元，所述显示单元设置于所述衬底基板的所述第一侧上；\n\n[0012]其中，所述显示单元包括多个发光单元，所述发光单元包括微型发光二极管或迷你发光二极管。\n\n[0013]根据本申请一实施例，所述过孔设置于相邻所述显示单元之间。\n\n[0014]根据本申请一实施例，所述显示面板具有至少一个过孔区，所述过孔区设置于所述显示面板的至少一端的边缘，所述过孔设置于所述过孔区。\n\n[0015]根据本申请一实施例，所述显示面板包括栅极驱动单元，所述过孔包括第一过孔和第二过孔，所述信号线包括：\n\n[0016]数据信号线，所述数据信号线的第一端与所述显示单元电性连接，所述数据信号线的第二端通过所述第一过孔与对应的所述焊盘电性连接；以及\n\n[0017]栅极驱动信号线，所述栅极驱动信号线的第一端与所述栅极驱动单元电性连接，所述栅极驱动信号线的第二端通过所述第二过孔与对应的所述绑定焊盘电性连接；\n\n[0018]其中，所述第二过孔与至少部分所述第一过孔设置于同一所述过孔区。\n\n[0019]根据本申请一实施例，所述栅极驱动单元设置于所述衬底基板的所述第一侧上，并且位于相邻所述显示单元之间。\n\n[0020]根据本申请一实施例，所述显示面板具有第一过孔区和第二过孔区，所述第一过孔区和所述第二过孔区分别设置于所述显示面板的相对端；\n\n[0021]其中，所述第一过孔分别设置于所述第一过孔区和所述第二过孔区，所述第二过孔设置于所述第一过孔区和所述第二过孔区中的一个。\n\n[0022]根据本申请一实施例，所述第一过孔和所述第二过孔设置于同一所述过孔区。\n\n[0023]根据本申请一实施例，所述显示面板具有多个子像素解交织电路，所述信号线还包括多条数据信号布线；\n\n[0024]其中，所述子像素解交织电路的输入端与M条所述数据信号布线的第一端电性连接，所述子像素解交织电路的输出端与N条所述数据信号线的第二端电性连接，所述数据信号布线的第二端通过所述第二过孔与对应的所述绑定焊盘电性连接；\n\n[0025]其中，M和N均为正整数，且N大于M。\n\n[0026]本申请实施例还提供一种拼接显示面板，由多个如上述的显示面板拼接而成。\n\n[0027]本申请实施例的有益效果：本申请实施例提供一种显示面板及拼接显示面板，所述拼接显示面板由多个显示面板拼接而成，所述显示面板包括衬底基板、信号线、绑定焊盘，所述衬底基板具有第一侧和与所述第一侧相对设置的第二侧，所述信号线设置于所述衬底基板的所述第一侧上，通过将所述绑定焊盘设置于所述衬底基板的所述第二侧上，并利用贯穿衬底基板的过孔将信号线与绑定焊盘电性连接，以此减小甚至消除显示面板的下边框的宽度，改善拼接显示面板在拼接位置处存在明显的“黑线”的情况，实现无缝拼接的效果。\n\n附图说明\n\n[0028]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0029]图1为本申请实施例提供的显示面板的正面结构示意图；\n\n[0030]图2为本申请实施例提供的显示面板的背面结构示意图；\n\n[0031]图3为本申请实施例提供的显示单元的平面结构示意图；\n\n[0032]图4为本申请实施例提供的显示面板的拼接示意图；\n\n[0033]图5为本申请实施例提供的第一种显示面板的正面布局示意图；\n\n[0034]图6为本申请实施例提供的第二种显示面板的正面布局示意图。\n\n具体实施方式\n\n[0035]以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。\n\n[0036]下面结合附图和具体实施例对本申请做进一步的说明。\n\n[0037]本申请实施例提供一种显示面板及拼接显示面板，所述拼接显示面板由多个所述显示面板拼接而成，如图1所示，图1为本申请实施例提供的显示面板的正面结构示意图，所述显示面板100包括衬底基板10以及多条信号线20，所述衬底基板10具有第一侧10a，多条所述信号线20设置于所述衬底基板10的所述第一侧10a上。\n\n[0038]在本申请实施例中，所述衬底基板包括玻璃基板。\n\n[0039]如图2所示，图2为本申请实施例提供的显示面板的背面结构示意图，所述显示面板100还包括多个绑定焊盘(bondingpad)30，所述衬底基板10还具有与所述第一侧10a相对设置的第二侧10b，多个所述绑定焊盘30均设置于所述衬底基板10的所述第二侧10b上。\n\n[0040]所述显示面板100还包括多个过孔40，所述过孔40在所述衬底基板10的厚度方向上贯穿所述衬底基板10，所述信号线20通过所述过孔40与对应的所述绑定焊盘30电性连接。\n\n[0041]在其中一个实施例中，可以通过机械加工的方式形成所述过孔40。机械加工的方式包括但不限于激光切割、干刻蚀或者湿法刻蚀等。\n\n[0042]在其中一个实施例中，所述信号线20可以通过填充于所述过孔40内的导电材料与对应的所述绑定焊盘30连接，所述导电材料可以为金属材料，如银浆等。\n\n[0043]如图1所示，所述显示面板100还包括多个显示单元50，所述显示单元50设置于所述衬底基板10的所述第一侧10a上。\n\n[0044]如图3所示，图3为本申请实施例提供的显示单元的平面结构示意图，所述显示单元50包括驱动电路层51以及设置于所述驱动电路层51上的3个或者其他多个发光单元52，每个所述发光单元52即为一个显示子像素，所述发光单元可以包括红色子像素521、绿色子像素522以及蓝色子像素523，驱动电路层51中具有多个子像素驱动电路，所述发光单元52与所述子像素驱动电路电性连接以在所述子像素驱动电路的驱动下发光。\n\n[0045]具体的，所述发光单元52包括微型发光二极管(microlight-emitting diode,Micro LED)。每个微型发光二极管在转移至衬底基板之前就已经被独立封装好，在将微型发光二极管转移至衬底基板上后也无需对显示面板进行整面封装，如此可以省去有机发光二极管(organiclight-emittingdiode,OLED)显示面板中为形成薄膜封装层所预留的非显示区边界，从而可以避免OLED显示面板所需的整面封装的问题。\n\n[0046]在实际应用中，所述发光单元52的种类不仅限于微型发光二极管，还可以为迷你发光二极管(mini LED)，迷你发光二极管同样也具有自封装特性，因此也可以克服OLED显示面板薄膜封装带来的非显示区边界的问题。\n\n[0047]进一步的，所述过孔40设置于相邻所述显示单元50之间。\n\n[0048]如图3所示，相较于有机发光二极管，微型发光二极管具有更小的尺寸以及更小的发光面积，其所占据的空间也更小，在相同分辨率的情况下，相邻采用微型发光二极管的显示单元之间可用于形成过孔的区域大于相邻采用有机发光二极管的显示单元之间的区域。因此，采用微型发光二极管作为发光单元，可以在保证显示面板分辨率的情况下，预留足够的空间用于刻蚀形成过孔，同时也可以降低过孔40的制程对显示单元50中的发光单元或者其他开关元件造成损坏的风险。\n\n[0049]如图1所示，所述信号线20包括多条数据信号线21，所述过孔40包括多个第一过孔41，所述数据信号线21的第一端与对应的所述显示单元50的子像素驱动电路电性连接，所述数据信号线21的第二端通过所述第一过孔41与对应的所述绑定焊盘30电性连接，每个显示像素包括三个发光单元，每列显示像素需要三条数据信号线以及三个第一过孔即可实现驱动发光的功能。\n\n[0050]具体的，所述第一过孔41包括第一子过孔411、第二子过孔412和第三子过孔413，所述数据信号线21包括第一数据信号线211、第二数据信号线222以及第三数据信号线213。第一数据信号线211的第一端与显示单元中红色子像素对应的子像素驱动电路电性连接，第一数据信号线211的第二端通过所述第一子过孔411与对应的所述绑定焊盘30电性连接。第二数据信号线212的第一端与显示单元中绿色子像素对应的子像素驱动电路电性连接，第二数据信号线212的第二端通过所述第二子过孔412与对应的所述绑定焊盘30电性连接。第三数据信号线213的第一端与显示单元中蓝色子像素对应的子像素驱动电路电性连接，第三数据信号线213的第二端通过所述第三子过孔413与对应的所述绑定焊盘30电性连接。\n\n[0051]如图1所示，所述显示面板100包括栅极驱动单元60，所述栅极驱动单元60设置于所述衬底基板10的所述第一侧10a上，并且设置于相邻所述显示单元50之间。\n\n[0052]结合图1和图4所示，图4为本申请实施例提供的拼接显示面板的结构示意图，拼接显示面板可以包括第一显示面板100a和第二显示面板100b，所述第一显示面板100a和第二显示面板100b的结构均与上述实施例所提供的显示面板100的结构相同，此处不做赘述。\n\n[0053]可以理解的是，通过将栅极驱动单元60设置在相邻的显示单元50之间，可以消除原本位于第一显示面板100a以及第二显示面板110b左右两侧的非显示区，使得第一显示面板100a和第一显示面板100b的正面均为显示区，第一显示面板100a和第一显示面板100b的边缘也都可以实现显示的功能，从而可以实现无缝拼接的效果。\n\n[0054]进一步的，如图1所示，所述过孔40包括第二过孔42，所述信号线20包括多条栅极驱动信号线22，所述栅极驱动信号线22的第一端与所述栅极驱动单元60连接，所述栅极驱动信号线22的第二端通过第二过孔22与对应的所述绑定焊盘30连接。\n\n[0055]具体的，所述栅极驱动单元60包括多个级联的栅极驱动电路61(gate driver onarray,GOA)，所述栅极驱动信号线22的所述第一端与所述栅极驱动单元60中对应的所述栅极驱动电路61连接，所述显示面板还包括多条沿图示水平方形延伸并沿竖直方向间隔排列的扫描线，所述扫描线与对应的一列显示单元的子像素驱动电路连接，所述扫描线还与对应的栅极驱动电路连接，所述栅极驱动信号线的所述第一端与对应的所述栅极驱动电路连接，用于提供控制栅极驱动电路的栅极驱动信号、时序控制信号以及电源信号等。\n\n[0056]进一步的，所述显示面板100具有至少一个过孔区HA，所述过孔区HA设置于所述显示面板100的至少一端的边缘，所述过孔40设置于所述过孔区HA。可以理解的是，由于过孔40需要与绑定焊盘30对位设置，驱动芯片通过绑定焊盘绑定在衬底基板10上，将过孔40集中设置于显示面板100至少一端边缘的过孔区HA内，可以使绑定焊盘30也集中设置于显示面板100至少一端边缘，如此可以减少驱动芯片的数量，并降低制程的难度。\n\n[0057]所述第二过孔42与至少部分所述第一过孔41设置于同一所述过孔区HA。\n\n[0058]在其中一个实施例中，如图5所示，图5为本申请实施例提供的第一种显示面板的正面布局示意图，所述显示面板具有第一过孔区HA1和第二过孔区HA2，所述第一过孔区HA1和所述第二过孔区HA2分别设置于所述显示面板的相对端。\n\n[0059]在图4所示的俯视的视角下，所述第一过孔区HA1设置于所述显示面板100的上端边缘，所述第二过孔区HA2设置于所述显示面板100的下端边缘，并且所述第一过孔区HA1和所述第二过孔区分别HA2位于所述显示面板沿竖直方向所划分的右半区和左半区。\n\n[0060]多个所述第一过孔41可以分别设置于所述第一过孔区HA1和所述第二过孔区HA2，设置于右半区的数据信号线21可以通过第一过孔区HA1内的第一过孔41与对应的绑定焊盘30电性连接，并用于驱动位于右半区的显示单元50发光，设置于左半区的数据信号线可21以通过第二过孔区HA2内的第一过孔41与对应的绑定焊盘30电性连接，并用于驱动位于左半区的显示单元50发光。\n\n[0061]本申请实施例提供的显示面板具有一个驱动单元60，该栅极驱动单元60可以设置于所述显示面板100的左半区和右半区之间的中间区域，通过将栅极驱动单元60居中设置，可使位于栅极驱动单元60左、右两侧的显示单元50与该栅极驱动单元60之间的距离近乎相等，从而使栅极驱动单元60左、右两侧的延时相近，进而可以改善显示面板100存在的横向显示不均的问题。\n\n[0062]多个所述第二过孔42均设置于所述第二过孔区HA2，所述栅极驱动信号线22的所述第二端通过设置于第二过孔区HA2内的第二过孔42与对应的绑定焊盘30电性连接。\n\n[0063]在实际应用中，多个所述第二过孔42也可以都设置于所述第一过孔区HA1。\n\n[0064]在其中一个实施例中，如图6所示，图6为本申请实施例提供的第二种显示面板的正面布局示意图，所述显示面板包括一个过孔区HA，所述过孔区HA设置于所述显示面板100的下端边缘，所述第一过孔41和所述第二过孔42均设置于同一所述过孔区HA内。\n\n[0065]进一步的，所述显示面板100具有多个子像素解交织电路70，所述子像素解交织电路70设置于所述衬底基板10的所述第一侧10a上，并且靠近所述过孔区HA，所述信号线20还包括多条数据信号布线23，每个所述子像素解交织电路70的输入端与M条所述数据信号布线23的第一端电性连接，所述子像素解交织电路70的输出端与N条所述数据信号线21的所述第二端电性连接，所述数据信号布线23的所述第二端通过所述第二过孔42与对应的所述绑定焊盘30电性连接，其中，M和N均为正整数，且N大于M。\n\n[0066]可以理解的是，若未设置子像素解交织电路70，N条数据信号线21需要通过N个第一过41孔与对应的绑定焊盘30连接，才能实现对N列显示单元的驱动。若设置子像素解交织电路70，所述子像素解交织电路70可以将经由M条数据信号布线23传递的M个数据信号分解为N个信号，并传递至N条数据信号线21内，如此，仅需M个第一过孔，即可实现对N列显示像素驱动的效果。由此可知，通过设置子像素解交织电路70，可以减少显示面板100内第一过孔41的数量，从而可以将第二过孔42与第一过孔41设置于同一所述过孔区HA内。\n\n[0067]在其中一个实施例中，M等于1，N等于2，即每个子像素解交织电路70的输入端与1条数据信号布线23连接，每个子像素解交织电路70的输出端与2条数据信号线21连接，如此可以将1条数据信号布线中的1个数据信号分解为两个数据信号，实现对两列显示像素的驱动，从而可以将第一过孔41的数量减少50％。\n\n[0068]本申请实施例提供一种显示面板及拼接显示面板，所述拼接显示面板由多个显示面板拼接而成，所述显示面板包括衬底基板、信号线、绑定焊盘，所述衬底基板具有第一侧和与所述第一侧相对设置的第二侧，所述信号线设置于所述衬底基板的所述第一侧上，通过将所述绑定焊盘设置于所述衬底基板的所述第二侧上，并利用贯穿衬底基板的过孔将信号线与绑定焊盘电性连接，以此减小甚至消除显示面板的下边框的宽度，改善拼接显示面板在拼接位置处存在明显的“黑线”的情况，实现无缝拼接的效果。\n\n[0069]综上所述，虽然本申请以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为基准。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种显示面板及拼接显示面板。\n\n背景技术\n\n[0002]现行的拼接显示技术，为了满足显示面板相互拼接、协同显示的需求，多采用窄化边框的方法，通过将显示面板的左右边框极致窄化，甚至将下边框中的部分功能单元集成在显示面板的显示区中，来获得非常狭窄的边框宽度，最后将这种特殊的小尺寸显示面板拼接呈大尺寸显示面板，达到拼接显示的目的。\n\n[0003]由于显示面板下边框位置存在大量的扇出(fanout)电路、绑定焊盘(bondingpad)的相关设计，使得显示面板的下边框宽度较另外三边都更大，且难以完全消除，使得各个小尺寸显示面板在拼接位置会出现明显的“黑线”，难以达成完全无缝拼接的目的。\n\n[0004]综上所述，现有拼接显示面板存在拼接位置处出现明显的缝隙的问题。故，有必要提供一种显示面板及电子装置来改善这一缺陷。\n\n发明内容\n\n[0005]本申请实施例提供一种显示面板及拼接显示面板，用于解决现有拼接显示面板存在的拼接位置处出现明显的缝隙的问题。\n\n[0006]本申请实施例提供一种显示面板，包括：\n\n[0007]衬底基板，具有第一侧和与所述第一侧相对设置的第二侧；\n\n[0008]信号线，设置于所述衬底基板的所述第一侧上；\n\n[0009]绑定焊盘，设置于所述衬底基板的所述第二侧上；以及\n\n[0010]过孔，在所述衬底基板的厚度方向上贯穿所述衬底基板，所述信号线通过所述过孔与所述绑定焊盘电性连接。\n\n[0011]根据本申请一实施例，所述显示面板还包括多个显示单元，所述显示单元设置于所述衬底基板的所述第一侧上；\n\n[0012]其中，所述显示单元包括多个发光单元，所述发光单元包括微型发光二极管或迷你发光二极管。\n\n[0013]根据本申请一实施例，所述过孔设置于相邻所述显示单元之间。\n\n[0014]根据本申请一实施例，所述显示面板具有至少一个过孔区，所述过孔区设置于所述显示面板的至少一端的边缘，所述过孔设置于所述过孔区。\n\n[0015]根据本申请一实施例，所述显示面板包括栅极驱动单元，所述过孔包括第一过孔和第二过孔，所述信号线包括：\n\n[0016]数据信号线，所述数据信号线的第一端与所述显示单元电性连接，所述数据信号线的第二端通过所述第一过孔与对应的所述焊盘电性连接；以及\n\n[0017]栅极驱动信号线，所述栅极驱动信号线的第一端与所述栅极驱动单元电性连接，所述栅极驱动信号线的第二端通过所述第二过孔与对应的所述绑定焊盘电性连接；\n\n[0018]其中，所述第二过孔与至少部分所述第一过孔设置于同一所述过孔区。\n\n[0019]根据本申请一实施例，所述栅极驱动单元设置于所述衬底基板的所述第一侧上，并且位于相邻所述显示单元之间。\n\n[0020]根据本申请一实施例，所述显示面板具有第一过孔区和第二过孔区，所述第一过孔区和所述第二过孔区分别设置于所述显示面板的相对端；\n\n[0021]其中，所述第一过孔分别设置于所述第一过孔区和所述第二过孔区，所述第二过孔设置于所述第一过孔区和所述第二过孔区中的一个。\n\n[0022]根据本申请一实施例，所述第一过孔和所述第二过孔设置于同一所述过孔区。\n\n[0023]根据本申请一实施例，所述显示面板具有多个子像素解交织电路，所述信号线还包括多条数据信号布线；\n\n[0024]其中，所述子像素解交织电路的输入端与M条所述数据信号布线的第一端电性连接，所述子像素解交织电路的输出端与N条所述数据信号线的第二端电性连接，所述数据信号布线的第二端通过所述第二过孔与对应的所述绑定焊盘电性连接；\n\n[0025]其中，M和N均为正整数，且N大于M。\n\n[0026]本申请实施例还提供一种拼接显示面板，由多个如上述的显示面板拼接而成。\n\n[0027]本申请实施例的有益效果：本申请实施例提供一种显示面板及拼接显示面板，所述拼接显示面板由多个显示面板拼接而成，所述显示面板包括衬底基板、信号线、绑定焊盘，所述衬底基板具有第一侧和与所述第一侧相对设置的第二侧，所述信号线设置于所述衬底基板的所述第一侧上，通过将所述绑定焊盘设置于所述衬底基板的所述第二侧上，并利用贯穿衬底基板的过孔将信号线与绑定焊盘电性连接，以此减小甚至消除显示面板的下边框的宽度，改善拼接显示面板在拼接位置处存在明显的“黑线”的情况，实现无缝拼接的效果。\n\n附图说明\n\n[0028]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0029]图1为本申请实施例提供的显示面板的正面结构示意图；\n\n[0030]图2为本申请实施例提供的显示面板的背面结构示意图；\n\n[0031]图3为本申请实施例提供的显示单元的平面结构示意图；\n\n[0032]图4为本申请实施例提供的显示面板的拼接示意图；\n\n[0033]图5为本申请实施例提供的第一种显示面板的正面布局示意图；\n\n[0034]图6为本申请实施例提供的第二种显示面板的正面布局示意图。\n\n具体实施方式\n\n[0035]以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。\n\n[0036]下面结合附图和具体实施例对本申请做进一步的说明。\n\n[0037]本申请实施例提供一种显示面板及拼接显示面板，所述拼接显示面板由多个所述显示面板拼接而成，如图1所示，图1为本申请实施例提供的显示面板的正面结构示意图，所述显示面板100包括衬底基板10以及多条信号线20，所述衬底基板10具有第一侧10a，多条所述信号线20设置于所述衬底基板10的所述第一侧10a上。\n\n[0038]在本申请实施例中，所述衬底基板包括玻璃基板。\n\n[0039]如图2所示，图2为本申请实施例提供的显示面板的背面结构示意图，所述显示面板100还包括多个绑定焊盘(bondingpad)30，所述衬底基板10还具有与所述第一侧10a相对设置的第二侧10b，多个所述绑定焊盘30均设置于所述衬底基板10的所述第二侧10b上。\n\n[0040]所述显示面板100还包括多个过孔40，所述过孔40在所述衬底基板10的厚度方向上贯穿所述衬底基板10，所述信号线20通过所述过孔40与对应的所述绑定焊盘30电性连接。\n\n[0041]在其中一个实施例中，可以通过机械加工的方式形成所述过孔40。机械加工的方式包括但不限于激光切割、干刻蚀或者湿法刻蚀等。\n\n[0042]在其中一个实施例中，所述信号线20可以通过填充于所述过孔40内的导电材料与对应的所述绑定焊盘30连接，所述导电材料可以为金属材料，如银浆等。\n\n[0043]如图1所示，所述显示面板100还包括多个显示单元50，所述显示单元50设置于所述衬底基板10的所述第一侧10a上。\n\n[0044]如图3所示，图3为本申请实施例提供的显示单元的平面结构示意图，所述显示单元50包括驱动电路层51以及设置于所述驱动电路层51上的3个或者其他多个发光单元52，每个所述发光单元52即为一个显示子像素，所述发光单元可以包括红色子像素521、绿色子像素522以及蓝色子像素523，驱动电路层51中具有多个子像素驱动电路，所述发光单元52与所述子像素驱动电路电性连接以在所述子像素驱动电路的驱动下发光。\n\n[0045]具体的，所述发光单元52包括微型发光二极管(microlight-emitting diode,Micro LED)。每个微型发光二极管在转移至衬底基板之前就已经被独立封装好，在将微型发光二极管转移至衬底基板上后也无需对显示面板进行整面封装，如此可以省去有机发光二极管(organiclight-emittingdiode,OLED)显示面板中为形成薄膜封装层所预留的非显示区边界，从而可以避免OLED显示面板所需的整面封装的问题。\n\n[0046]在实际应用中，所述发光单元52的种类不仅限于微型发光二极管，还可以为迷你发光二极管(mini LED)，迷你发光二极管同样也具有自封装特性，因此也可以克服OLED显示面板薄膜封装带来的非显示区边界的问题。\n\n[0047]进一步的，所述过孔40设置于相邻所述显示单元50之间。\n\n[0048]如图3所示，相较于有机发光二极管，微型发光二极管具有更小的尺寸以及更小的发光面积，其所占据的空间也更小，在相同分辨率的情况下，相邻采用微型发光二极管的显示单元之间可用于形成过孔的区域大于相邻采用有机发光二极管的显示单元之间的区域。因此，采用微型发光二极管作为发光单元，可以在保证显示面板分辨率的情况下，预留足够的空间用于刻蚀形成过孔，同时也可以降低过孔40的制程对显示单元50中的发光单元或者其他开关元件造成损坏的风险。\n\n[0049]如图1所示，所述信号线20包括多条数据信号线21，所述过孔40包括多个第一过孔41，所述数据信号线21的第一端与对应的所述显示单元50的子像素驱动电路电性连接，所述数据信号线21的第二端通过所述第一过孔41与对应的所述绑定焊盘30电性连接，每个显示像素包括三个发光单元，每列显示像素需要三条数据信号线以及三个第一过孔即可实现驱动发光的功能。\n\n[0050]具体的，所述第一过孔41包括第一子过孔411、第二子过孔412和第三子过孔413，所述数据信号线21包括第一数据信号线211、第二数据信号线222以及第三数据信号线213。第一数据信号线211的第一端与显示单元中红色子像素对应的子像素驱动电路电性连接，第一数据信号线211的第二端通过所述第一子过孔411与对应的所述绑定焊盘30电性连接。第二数据信号线212的第一端与显示单元中绿色子像素对应的子像素驱动电路电性连接，第二数据信号线212的第二端通过所述第二子过孔412与对应的所述绑定焊盘30电性连接。第三数据信号线213的第一端与显示单元中蓝色子像素对应的子像素驱动电路电性连接，第三数据信号线213的第二端通过所述第三子过孔413与对应的所述绑定焊盘30电性连接。\n\n[0051]如图1所示，所述显示面板100包括栅极驱动单元60，所述栅极驱动单元60设置于所述衬底基板10的所述第一侧10a上，并且设置于相邻所述显示单元50之间。\n\n[0052]结合图1和图4所示，图4为本申请实施例提供的拼接显示面板的结构示意图，拼接显示面板可以包括第一显示面板100a和第二显示面板100b，所述第一显示面板100a和第二显示面板100b的结构均与上述实施例所提供的显示面板100的结构相同，此处不做赘述。\n\n[0053]可以理解的是，通过将栅极驱动单元60设置在相邻的显示单元50之间，可以消除原本位于第一显示面板100a以及第二显示面板110b左右两侧的非显示区，使得第一显示面板100a和第一显示面板100b的正面均为显示区，第一显示面板100a和第一显示面板100b的边缘也都可以实现显示的功能，从而可以实现无缝拼接的效果。\n\n[0054]进一步的，如图1所示，所述过孔40包括第二过孔42，所述信号线20包括多条栅极驱动信号线22，所述栅极驱动信号线22的第一端与所述栅极驱动单元60连接，所述栅极驱动信号线22的第二端通过第二过孔22与对应的所述绑定焊盘30连接。\n\n[0055]具体的，所述栅极驱动单元60包括多个级联的栅极驱动电路61(gate driver onarray,GOA)，所述栅极驱动信号线22的所述第一端与所述栅极驱动单元60中对应的所述栅极驱动电路61连接，所述显示面板还包括多条沿图示水平方形延伸并沿竖直方向间隔排列的扫描线，所述扫描线与对应的一列显示单元的子像素驱动电路连接，所述扫描线还与对应的栅极驱动电路连接，所述栅极驱动信号线的所述第一端与对应的所述栅极驱动电路连接，用于提供控制栅极驱动电路的栅极驱动信号、时序控制信号以及电源信号等。\n\n[0056]进一步的，所述显示面板100具有至少一个过孔区HA，所述过孔区HA设置于所述显示面板100的至少一端的边缘，所述过孔40设置于所述过孔区HA。可以理解的是，由于过孔40需要与绑定焊盘30对位设置，驱动芯片通过绑定焊盘绑定在衬底基板10上，将过孔40集中设置于显示面板100至少一端边缘的过孔区HA内，可以使绑定焊盘30也集中设置于显示面板100至少一端边缘，如此可以减少驱动芯片的数量，并降低制程的难度。\n\n[0057]所述第二过孔42与至少部分所述第一过孔41设置于同一所述过孔区HA。\n\n[0058]在其中一个实施例中，如图5所示，图5为本申请实施例提供的第一种显示面板的正面布局示意图，所述显示面板具有第一过孔区HA1和第二过孔区HA2，所述第一过孔区HA1和所述第二过孔区HA2分别设置于所述显示面板的相对端。\n\n[0059]在图4所示的俯视的视角下，所述第一过孔区HA1设置于所述显示面板100的上端边缘，所述第二过孔区HA2设置于所述显示面板100的下端边缘，并且所述第一过孔区HA1和所述第二过孔区分别HA2位于所述显示面板沿竖直方向所划分的右半区和左半区。\n\n[0060]多个所述第一过孔41可以分别设置于所述第一过孔区HA1和所述第二过孔区HA2，设置于右半区的数据信号线21可以通过第一过孔区HA1内的第一过孔41与对应的绑定焊盘30电性连接，并用于驱动位于右半区的显示单元50发光，设置于左半区的数据信号线可21以通过第二过孔区HA2内的第一过孔41与对应的绑定焊盘30电性连接，并用于驱动位于左半区的显示单元50发光。\n\n[0061]本申请实施例提供的显示面板具有一个驱动单元60，该栅极驱动单元60可以设置于所述显示面板100的左半区和右半区之间的中间区域，通过将栅极驱动单元60居中设置，可使位于栅极驱动单元60左、右两侧的显示单元50与该栅极驱动单元60之间的距离近乎相等，从而使栅极驱动单元60左、右两侧的延时相近，进而可以改善显示面板100存在的横向显示不均的问题。\n\n[0062]多个所述第二过孔42均设置于所述第二过孔区HA2，所述栅极驱动信号线22的所述第二端通过设置于第二过孔区HA2内的第二过孔42与对应的绑定焊盘30电性连接。\n\n[0063]在实际应用中，多个所述第二过孔42也可以都设置于所述第一过孔区HA1。\n\n[0064]在其中一个实施例中，如图6所示，图6为本申请实施例提供的第二种显示面板的正面布局示意图，所述显示面板包括一个过孔区HA，所述过孔区HA设置于所述显示面板100的下端边缘，所述第一过孔41和所述第二过孔42均设置于同一所述过孔区HA内。\n\n[0065]进一步的，所述显示面板100具有多个子像素解交织电路70，所述子像素解交织电路70设置于所述衬底基板10的所述第一侧10a上，并且靠近所述过孔区HA，所述信号线20还包括多条数据信号布线23，每个所述子像素解交织电路70的输入端与M条所述数据信号布线23的第一端电性连接，所述子像素解交织电路70的输出端与N条所述数据信号线21的所述第二端电性连接，所述数据信号布线23的所述第二端通过所述第二过孔42与对应的所述绑定焊盘30电性连接，其中，M和N均为正整数，且N大于M。\n\n[0066]可以理解的是，若未设置子像素解交织电路70，N条数据信号线21需要通过N个第一过41孔与对应的绑定焊盘30连接，才能实现对N列显示单元的驱动。若设置子像素解交织电路70，所述子像素解交织电路70可以将经由M条数据信号布线23传递的M个数据信号分解为N个信号，并传递至N条数据信号线21内，如此，仅需M个第一过孔，即可实现对N列显示像素驱动的效果。由此可知，通过设置子像素解交织电路70，可以减少显示面板100内第一过孔41的数量，从而可以将第二过孔42与第一过孔41设置于同一所述过孔区HA内。\n\n[0067]在其中一个实施例中，M等于1，N等于2，即每个子像素解交织电路70的输入端与1条数据信号布线23连接，每个子像素解交织电路70的输出端与2条数据信号线21连接，如此可以将1条数据信号布线中的1个数据信号分解为两个数据信号，实现对两列显示像素的驱动，从而可以将第一过孔41的数量减少50％。\n\n[0068]本申请实施例提供一种显示面板及拼接显示面板，所述拼接显示面板由多个显示面板拼接而成，所述显示面板包括衬底基板、信号线、绑定焊盘，所述衬底基板具有第一侧和与所述第一侧相对设置的第二侧，所述信号线设置于所述衬底基板的所述第一侧上，通过将所述绑定焊盘设置于所述衬底基板的所述第二侧上，并利用贯穿衬底基板的过孔将信号线与绑定焊盘电性连接，以此减小甚至消除显示面板的下边框的宽度，改善拼接显示面板在拼接位置处存在明显的“黑线”的情况，实现无缝拼接的效果。\n\n[0069]综上所述，虽然本申请以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为基准。');
INSERT INTO `os_patent_instruction_text` VALUES (10991, 24045, '技术领域\n\n[0001]本申请涉及显示技术的领域，具体涉及一种显示面板及制作方法和移动终端。\n\n背景技术\n\n[0002]随着高阶TV市场对画质的要求越来越高，提升显示画质成为高阶TV的一个新需求。目前Mini LED/Micro-LED作为一个全新的显示技术，在亮度、功耗上较OLED具有优势，成为显示领域的一个热门方向。\n\n[0003]但随着Mini LED/Micro-LED的尺寸越做越小，LED芯片转移工艺的难度越来越大，且到了Micro-LED级别时，传统的固晶工艺已无法满足芯片转移需求，而巨量转移技术尚未成熟，因此芯片转移技术已成为限制Micro-LED发展的一大关键因素。\n\n发明内容\n\n[0004]本申请提供一种显示面板及制作方法和移动终端，以改善当前Mini LED/Micro-LED显示面板因芯片转移技术而发展受到限制的技术问题。\n\n[0005]为解决上述技术问题，本申请提供的技术方案如下：\n\n[0006]本申请提供一种显示面板，包括衬底和位于所述衬底上的发光驱动层；其中，所述发光驱动层包括：\n\n[0007]发光器件，设置于所述衬底上，所述发光器件包括由半导体材料构成的发光层以及位于所述发光层两侧的源极和漏极；以及\n\n[0008]栅极，位于所述发光器件的至少一侧，所述栅极与所述发光器件绝缘设置。\n\n[0009]在本申请的显示面板中，在第一方向上，所述栅极与所述发光层相对设置；\n\n[0010]其中，所述第一方向垂直于所述源极、发光层及所述漏极的叠层方向。\n\n[0011]在本申请的显示面板中，在所述第一方向上，所述发光层在所述栅极上的正投影位于所述栅极内。\n\n[0012]在本申请的显示面板中，所述显示面板还包括公共电压端和交流电压端，所述源极与所述公共电压端电性连接，所述漏极与所述交流电压端电性连接。\n\n[0013]在本申请的显示面板中，所述显示面板还包括栅绝缘层，所述栅绝缘层位于所述栅极与所述发光层之间；\n\n[0014]其中，所述栅绝缘层包括第一栅绝缘部和第二栅绝缘部，所述第一栅绝缘部设置在所述源极、所述发光层及所述漏极所形成的层叠结构上，所述第二栅绝缘部设置在所述衬底除所述层叠结构之外的区域上。\n\n[0015]在本申请的显示面板中，所述发光层至少包括第一半导体层和第二半导体层，所述第一半导体层和所述第二半导体层的材料不相同。\n\n[0016]在本申请的显示面板中，所述第一半导体层的材料包括GaAs，所述第二半导体层的材料包括AlGaAs。\n\n[0017]在本申请的显示面板中，在所述发光层中，所述第一半导体层和所述第二半导体层交替层叠设置。\n\n[0018]本申请还提出了一种显示面板的制作方法，包括：\n\n[0019]在衬底上形成发光器件，所述发光器件包括由半导体材料构成的发光层及位于所述发光层两侧的源极和漏极；\n\n[0020]在所述发光器件的至少一侧形成栅极，所述栅极与所述发光器件绝缘设置。\n\n[0021]本申请还提出了一种移动终端，包括终端主体和上述显示面板，所述终端主体和所述显示面板组合为一体。\n\n[0022]有益效果：本申请通过将用于控制开关的薄膜晶体管与发光二极管的发光结构集成起来，形成具有开关功能的发光薄膜晶体管，从而可以省略芯片转移的步骤，解除或较大程度缓解了现阶段芯片转移技术对Mini LED/Micro-LED显示面板的限制问题，而且同时可以省略薄膜晶体管所占空间，提高了LED的集成度。\n\n附图说明\n\n[0023]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0024]图1是本申请所述显示面板的第一种整体结构示意图；\n\n[0025]图2是本申请所述显示面板的第二种整体结构示意图；\n\n[0026]图3是本申请所述显示面板的第三种整体结构示意图；\n\n[0027]图4至图9是本申请所述显示面板的成型工艺流程图。\n\n[0028]附图标记说明：\n\n[0029]衬底100、发光器件200、发光层210、源极220、漏极230、栅极240、栅绝缘层300、第一栅绝缘部310、第二栅绝缘部320。\n\n具体实施方式\n\n[0030]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0031]随着高阶TV市场对画质的要求越来越高，提升显示画质成为高阶TV的一个新需求。目前Mini LED/Micro-LED作为一个全新的显示技术，在亮度、功耗上较OLED具有优势，成为显示领域的一个热门方向。但随着Mini LED/Micro-LED的尺寸越做越小，LED芯片转移工艺的难度越来越大，且到了Micro-LED级别时，传统的固晶工艺已无法满足芯片转移需求，而巨量转移技术尚未成熟，因此芯片转移技术已成为限制Micro-LED发展的一大关键因素。本申请基于上述技术问题提出了以下方案。\n\n[0032]请参阅图1和图2，本申请提供一种显示面板，包括衬底100和位于所述衬底100上的发光驱动层；其中，所述发光驱动层包括：\n\n[0033]发光器件200，设置于所述衬底100上，所述发光器件200包括由半导体材料构成的发光层210以及位于所述发光层210两侧的源极220和漏极230；以及栅极240，位于所述发光器件200的至少一侧，所述栅极240与所述发光器件200绝缘设置。\n\n[0034]本申请实施例通过在衬底100上设置包括有发光器件200和栅极240的发光驱动层，发光驱动层兼备“发光”和“驱动”功能，实现薄膜晶体管(TFT)与发光二极管(LED)的集成。其中，栅极240控制漏极230和源极220的导通与否，而漏极230、源极220还分别充当了发光二极管(LED)发光结构中的正、负极。当栅极240给正电位时，漏极230、源极220导通，此时由半导体材料构成的发光层210两侧的漏极230、源极220产生电压差，向发光层210中注入载流子(电子、空穴)，电子与空穴在发光层210内聚集、结合进而发光；当栅极240给负电位时，漏极230、源极220未导通，由于发光二极管的单向导通特性，此时发光层210内无载流子，薄膜晶体管(TFT)为关闭状态，不发光。\n\n[0035]本实施例通过以上设置，可以将具有开关功能的薄膜晶体管(TFT)与具有发光功能的发光二极管(LED)结合起来并实现高度集成，形成具有开关功能的发光薄膜晶体管，从而省略Micro-LED中芯片转移的步骤，巧妙规避了当前的技术难关，而且由于发光二极管(LED)的正负极是通过薄膜晶体管(TFT)的源漏极来形成，从而可省略或减小TFT所占的空间，实现高度集成。\n\n[0036]现结合具体实施例对本申请的技术方案进行描述。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0037]请参阅图1，图1是本申请所述显示面板的第一种整体结构示意图，在本申请的显示面板中，所述源极220设置于所述衬底100上，所述发光层210设置于所述源极220远离所述衬底100的一侧，所述漏极230设置于所述发光层210远离所述源极220的一侧。所述源极220、所述发光层210以及所述漏极230在所述衬底100上的正投影完全重合，以及，所述栅极240设置于所述源极220、所述发光层210及所述漏极230所形成的层叠结构的外围。\n\n[0038]在本实施例中，在第一方向X上，所述栅极240与所述发光层210相对设置，所述第一方向X垂直于所述源极220、发光层210及所述漏极230的叠层方向。\n\n[0039]在本实施例中，所述漏极230、源极220作为薄膜晶体管的组成部分，需要通过有源层实现导通，而处于漏极230、源极220中间且由半导体材料构成的发光层210除了实现发光功能，还充作了薄膜晶体管的有源层。因此本实施例通过在第一方向X上使所述栅极240与所述发光层210相对设置，可以实现所述栅极240对所述源极220、漏极230的导通控制，使薄膜晶体管的开关性能更加稳定。\n\n[0040]而且，本实施例由于将所述栅极240设置在所述发光层210、漏极230、源极220沿第一方向X的一侧，使所述栅极240未在垂直于显示面板的方向上与所述源漏极层进行层叠，因而可一定程度减小显示面板的厚度，实现显示面板的轻薄化。\n\n[0041]请参阅图1，在本申请的显示面板中，在所述第一方向X上，所述发光层210在所述栅极240上的正投影位于所述栅极240内。本实施例通过以上设置，使所述发光层210作为所述薄膜晶体管的有源层可以与所述栅极240完全相对，从而保证所述栅极240对所述漏极230、源极220导通与否的精准控制，有助于进一步提高“发光TFT”的开关功能稳定性。\n\n[0042]在本申请的显示面板中，所述显示面板还包括公共电压端(图中未示出)和交流电压端(图中未示出)，所述源极220与所述公共电压端电性连接，所述漏极230与所述交流电压端电性连接。\n\n[0043]本实施例通过将所述源极220电连接公共电压端，使所述源极220作为发光二极管结构中的负极，用于向所述发光层210中注入电子；与此同理，将所述漏极230与交流电压端电性连接，使所述漏极230作为发光二极管结构中的正极，用于向所述发光层210中注入空穴，当给所述栅极240正电压时，所述源极220、漏极230导通，电子与空穴在所述发光层210内聚集结合进而发光。\n\n[0044]本实施例通过以上设置，可以使在所述发光层210中聚集结合的电子、空穴分别由所述公共电压端、交流电压端提供，进而实现电子、空穴注入、结合发光的可持续性、可控性，发光可控性更强。\n\n[0045]请参阅图1，在本申请的显示面板中，所述显示面板还包括栅绝缘层300，所述栅绝缘层300位于所述栅极240与所述发光层210之间。本实施例通过在所述栅极240与所述发光层210之间设置栅绝缘层300，实现所述栅极240与作为有源层的所述发光层210之间的绝缘效果，进而实现“发光TFT”的基础开关效果。\n\n[0046]在本实施例中，所述栅绝缘层300包括第一栅绝缘部310和第二栅绝缘部320，所述第一栅绝缘部310设置在所述源极220、所述发光层210及所述漏极230所形成的层叠结构上，所述第二栅绝缘部320设置在所述衬底100除所述层叠结构之外的区域上。\n\n[0047]本实施例通过所述第一栅绝缘部310将所述发光器件200中的所述漏极230、所述源极220和所述发光层210与所述显示面板上的其他膜层隔绝开来，除了实现基础的“开关”作用，还对由漏极230、源极220及发光层210构成的发光结构起到较好的绝缘保护作用。此外，本实施例将所述第二栅绝缘部320设置于所述衬底100除所述层叠结构之外的区域上，可以对设置在所述衬底100上的各类走线起到良好的绝缘保护效果，提高电路稳定性。\n\n[0048]在本实施例中，所述栅极240位于所述第二栅绝缘部320上且设置于所述第一栅绝缘部310远离所述层叠结构的至少一侧。\n\n[0049]在本实施例中，请参阅图1至图3，在垂直于所述显示面板且朝向所述显示面板的出光方向上，所述栅极240远离所述衬底100的侧面不低于所述发光层210远离所述衬底100的侧面。\n\n[0050]请参阅图2，图2是本申请所述显示面板的第二种整体结构示意图，在本实施例中，所述栅极240远离所述衬底100的侧面与所述发光层210远离所述衬底100的侧面齐平，以使所述发光层210可以全部对应于所述栅极240，保证薄膜晶体管的稳定开关性能。\n\n[0051]请参阅图3，图3是本申请所述显示面板的第三种整体结构示意图，在本实施例中，所述栅极240远离所述衬底100的侧面与所述漏极230远离所述衬底100的侧面齐平，以使所述栅极240对应于所述发光层210还有结余部分，减小因制程误差所导致的薄膜晶体管的开关性能不稳定的风险。\n\n[0052]请参阅图1，在本实施例中，所述栅极240远离所述衬底100的侧面与所述第二栅绝缘部320远离所述衬底100的侧面齐平。本实施例通过以上设置，可以在垂直于所述显示面板的方向上，使所述栅极240与所述源极220、所述发光层210及所述漏极230所形成的叠层结构等高设置，从而提高所述发光驱动层的表面平整度，有利于继续在所述发光驱动层上形成其他膜层。\n\n[0053]在本申请的显示面板中，所述发光层210至少包括第一半导体层和第二半导体层，所述第一半导体层和所述第二半导体层的材料不相同。在本实施例中，所述第一半导体层的材料可以包括GaAs，所述第二半导体层的材料可以包括AlGaAs。\n\n[0054]在本实施例中，所述第一半导体层和所述第二半导体层交替层叠设置。\n\n[0055]本实施例通过将不同材料构成的第一半导体层和第二半导体层交替层叠以形成发光层210，使所述发光层210可以在不同半导体材料层的界面处形成空间电荷区，即“PN结”结构，进而具备发光二极管的“单向导电”特性，即只有在所述栅极240给正电位时且漏极230给高电位时，“PN结”才导通，发光层210才进行发光。在所述栅极240给负电位时或所述漏极230给低电位时(漏极230电位低于源极220电位)，“PN结”不能导通，发光层210不发光。本实施例通过以上设置，可以使所述发光层210的发光与否可控与可调性更好，从而与所述发光驱动层中的薄膜晶体管结构形成良好的匹配度，实现高度集成。\n\n[0056]本申请实施例还提供一种显示面板的制作方法，用于制作以上所述显示面板，所述显示面板的制作方法包括：\n\n[0057]S100、请参阅图4至图8，在衬底100上形成发光器件200，所述发光器件200包括由半导体材料构成的发光层210及位于所述发光层210两侧的源极220和漏极230；\n\n[0058]S200、请参阅图9，在所述发光器件200的至少一侧形成栅极240，所述栅极240与所述发光器件200绝缘设置。\n\n[0059]本实施例通过以上步骤制作所述显示面板，使得所述“发光驱动层”中的薄膜晶体管(TFT)结构与发光二极管(LED)可以同时形成，既节省TFT所需的空间，而且整体的制作步骤简单，易于操作，制作难度及成本更低。\n\n[0060]在本实施例中，所述S100步骤包括：\n\n[0061]S110、请参阅图4，采用化学沉积法在所述衬底100上形成源电极层，进行第一次图案化处理，采用湿法蚀刻，形成源极220；\n\n[0062]S120、请参阅图5和图6，采用化学沉积法在所述源极220上形成半导体材料层，进行第二次图案化处理，干法蚀刻或湿法蚀刻，形成所述发光层210；\n\n[0063]S130、请参阅图7，采用化学沉积法在所述发光层210上形成漏电极层，进行第三次图案化处理，采用湿法蚀刻，形成漏极230；\n\n[0064]S140、请参阅图8，采用化学沉积法在所述漏极230上形成栅绝缘层300。\n\n[0065]本实施例通过将所述S100步骤分解为包括S110、S120、S130、S140四步，可以逐步在衬底100上形成源极220、发光层210、漏极230、栅绝缘层300，而且由于源极220、发光层210、漏极230在所述衬底100上的正投影完全重合，因此S110、S120、S130步骤中的图案化处理步骤可以采用同一张光罩，从而可以减少光罩的数量，有效降低制作难度及成本。\n\n[0066]需要说明的是，在本实施例中，当所述S120步骤中的半导体材料层也采用湿法蚀刻时，所述S110、S120、S130步骤中的图案化处理可以在最后进行一步处理，即只进行一次蚀刻，具体的步骤如下：\n\n[0067]所述S100步骤包括：\n\n[0068]S110、采用化学沉积法在所述衬底100上形成源电极层；\n\n[0069]S120、采用化学沉积法在所述源极220上形成半导体材料层；\n\n[0070]S130、采用化学沉积法在所述发光层210上形成漏电极层，进行图案化处理，采用湿法蚀刻，同时形成源极220、发光层210和漏极230；\n\n[0071]S140、采用化学沉积法在所述漏极230上形成栅绝缘层300。\n\n[0072]本实施例通过以上步骤，可以使所述源极220、发光层210和漏极230只通过一次蚀刻来形成，不仅节省了光罩，而且减少了蚀刻次数，从而更好地减少制作工序、降低制作成本。\n\n[0073]在本实施例中，所述S200步骤包括：\n\n[0074]S210、请参阅图7，采用化学沉积法在所述栅绝缘层300上形成栅电极层，进行第四次图案化处理，采用湿法蚀刻，形成栅极240。\n\n[0075]本申请实施例通过在衬底100上设置包括有发光器件200和栅极240的发光驱动层，发光驱动层将具有开关功能的薄膜晶体管(TFT)与具有发光功能的发光二极管(LED)结合起来并实现高度集成，兼备“发光”和“驱动”功能，形成了具有开关功能的发光薄膜晶体管，从而省略Micro-LED中芯片转移的步骤，巧妙规避了当前的技术难关，而且由于发光二极管(LED)的正负极是通过薄膜晶体管(TFT)的源漏极来形成，从而可省略或减小TFT所占的空间，实现高度集成。\n\n[0076]以上对本申请实施例所提供的一种显示面板及制作方法和移动终端进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。', '技术领域\n\n[0001]本申请涉及显示技术的领域，具体涉及一种显示面板及制作方法和移动终端。\n\n背景技术\n\n[0002]随着高阶TV市场对画质的要求越来越高，提升显示画质成为高阶TV的一个新需求。目前Mini LED/Micro-LED作为一个全新的显示技术，在亮度、功耗上较OLED具有优势，成为显示领域的一个热门方向。\n\n[0003]但随着Mini LED/Micro-LED的尺寸越做越小，LED芯片转移工艺的难度越来越大，且到了Micro-LED级别时，传统的固晶工艺已无法满足芯片转移需求，而巨量转移技术尚未成熟，因此芯片转移技术已成为限制Micro-LED发展的一大关键因素。\n\n发明内容\n\n[0004]本申请提供一种显示面板及制作方法和移动终端，以改善当前Mini LED/Micro-LED显示面板因芯片转移技术而发展受到限制的技术问题。\n\n[0005]为解决上述技术问题，本申请提供的技术方案如下：\n\n[0006]本申请提供一种显示面板，包括衬底和位于所述衬底上的发光驱动层；其中，所述发光驱动层包括：\n\n[0007]发光器件，设置于所述衬底上，所述发光器件包括由半导体材料构成的发光层以及位于所述发光层两侧的源极和漏极；以及\n\n[0008]栅极，位于所述发光器件的至少一侧，所述栅极与所述发光器件绝缘设置。\n\n[0009]在本申请的显示面板中，在第一方向上，所述栅极与所述发光层相对设置；\n\n[0010]其中，所述第一方向垂直于所述源极、发光层及所述漏极的叠层方向。\n\n[0011]在本申请的显示面板中，在所述第一方向上，所述发光层在所述栅极上的正投影位于所述栅极内。\n\n[0012]在本申请的显示面板中，所述显示面板还包括公共电压端和交流电压端，所述源极与所述公共电压端电性连接，所述漏极与所述交流电压端电性连接。\n\n[0013]在本申请的显示面板中，所述显示面板还包括栅绝缘层，所述栅绝缘层位于所述栅极与所述发光层之间；\n\n[0014]其中，所述栅绝缘层包括第一栅绝缘部和第二栅绝缘部，所述第一栅绝缘部设置在所述源极、所述发光层及所述漏极所形成的层叠结构上，所述第二栅绝缘部设置在所述衬底除所述层叠结构之外的区域上。\n\n[0015]在本申请的显示面板中，所述发光层至少包括第一半导体层和第二半导体层，所述第一半导体层和所述第二半导体层的材料不相同。\n\n[0016]在本申请的显示面板中，所述第一半导体层的材料包括GaAs，所述第二半导体层的材料包括AlGaAs。\n\n[0017]在本申请的显示面板中，在所述发光层中，所述第一半导体层和所述第二半导体层交替层叠设置。\n\n[0018]本申请还提出了一种显示面板的制作方法，包括：\n\n[0019]在衬底上形成发光器件，所述发光器件包括由半导体材料构成的发光层及位于所述发光层两侧的源极和漏极；\n\n[0020]在所述发光器件的至少一侧形成栅极，所述栅极与所述发光器件绝缘设置。\n\n[0021]本申请还提出了一种移动终端，包括终端主体和上述显示面板，所述终端主体和所述显示面板组合为一体。\n\n[0022]有益效果：本申请通过将用于控制开关的薄膜晶体管与发光二极管的发光结构集成起来，形成具有开关功能的发光薄膜晶体管，从而可以省略芯片转移的步骤，解除或较大程度缓解了现阶段芯片转移技术对Mini LED/Micro-LED显示面板的限制问题，而且同时可以省略薄膜晶体管所占空间，提高了LED的集成度。\n\n附图说明\n\n[0023]为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0024]图1是本申请所述显示面板的第一种整体结构示意图；\n\n[0025]图2是本申请所述显示面板的第二种整体结构示意图；\n\n[0026]图3是本申请所述显示面板的第三种整体结构示意图；\n\n[0027]图4至图9是本申请所述显示面板的成型工艺流程图。\n\n[0028]附图标记说明：\n\n[0029]衬底100、发光器件200、发光层210、源极220、漏极230、栅极240、栅绝缘层300、第一栅绝缘部310、第二栅绝缘部320。\n\n具体实施方式\n\n[0030]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。\n\n[0031]随着高阶TV市场对画质的要求越来越高，提升显示画质成为高阶TV的一个新需求。目前Mini LED/Micro-LED作为一个全新的显示技术，在亮度、功耗上较OLED具有优势，成为显示领域的一个热门方向。但随着Mini LED/Micro-LED的尺寸越做越小，LED芯片转移工艺的难度越来越大，且到了Micro-LED级别时，传统的固晶工艺已无法满足芯片转移需求，而巨量转移技术尚未成熟，因此芯片转移技术已成为限制Micro-LED发展的一大关键因素。本申请基于上述技术问题提出了以下方案。\n\n[0032]请参阅图1和图2，本申请提供一种显示面板，包括衬底100和位于所述衬底100上的发光驱动层；其中，所述发光驱动层包括：\n\n[0033]发光器件200，设置于所述衬底100上，所述发光器件200包括由半导体材料构成的发光层210以及位于所述发光层210两侧的源极220和漏极230；以及栅极240，位于所述发光器件200的至少一侧，所述栅极240与所述发光器件200绝缘设置。\n\n[0034]本申请实施例通过在衬底100上设置包括有发光器件200和栅极240的发光驱动层，发光驱动层兼备“发光”和“驱动”功能，实现薄膜晶体管(TFT)与发光二极管(LED)的集成。其中，栅极240控制漏极230和源极220的导通与否，而漏极230、源极220还分别充当了发光二极管(LED)发光结构中的正、负极。当栅极240给正电位时，漏极230、源极220导通，此时由半导体材料构成的发光层210两侧的漏极230、源极220产生电压差，向发光层210中注入载流子(电子、空穴)，电子与空穴在发光层210内聚集、结合进而发光；当栅极240给负电位时，漏极230、源极220未导通，由于发光二极管的单向导通特性，此时发光层210内无载流子，薄膜晶体管(TFT)为关闭状态，不发光。\n\n[0035]本实施例通过以上设置，可以将具有开关功能的薄膜晶体管(TFT)与具有发光功能的发光二极管(LED)结合起来并实现高度集成，形成具有开关功能的发光薄膜晶体管，从而省略Micro-LED中芯片转移的步骤，巧妙规避了当前的技术难关，而且由于发光二极管(LED)的正负极是通过薄膜晶体管(TFT)的源漏极来形成，从而可省略或减小TFT所占的空间，实现高度集成。\n\n[0036]现结合具体实施例对本申请的技术方案进行描述。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。\n\n[0037]请参阅图1，图1是本申请所述显示面板的第一种整体结构示意图，在本申请的显示面板中，所述源极220设置于所述衬底100上，所述发光层210设置于所述源极220远离所述衬底100的一侧，所述漏极230设置于所述发光层210远离所述源极220的一侧。所述源极220、所述发光层210以及所述漏极230在所述衬底100上的正投影完全重合，以及，所述栅极240设置于所述源极220、所述发光层210及所述漏极230所形成的层叠结构的外围。\n\n[0038]在本实施例中，在第一方向X上，所述栅极240与所述发光层210相对设置，所述第一方向X垂直于所述源极220、发光层210及所述漏极230的叠层方向。\n\n[0039]在本实施例中，所述漏极230、源极220作为薄膜晶体管的组成部分，需要通过有源层实现导通，而处于漏极230、源极220中间且由半导体材料构成的发光层210除了实现发光功能，还充作了薄膜晶体管的有源层。因此本实施例通过在第一方向X上使所述栅极240与所述发光层210相对设置，可以实现所述栅极240对所述源极220、漏极230的导通控制，使薄膜晶体管的开关性能更加稳定。\n\n[0040]而且，本实施例由于将所述栅极240设置在所述发光层210、漏极230、源极220沿第一方向X的一侧，使所述栅极240未在垂直于显示面板的方向上与所述源漏极层进行层叠，因而可一定程度减小显示面板的厚度，实现显示面板的轻薄化。\n\n[0041]请参阅图1，在本申请的显示面板中，在所述第一方向X上，所述发光层210在所述栅极240上的正投影位于所述栅极240内。本实施例通过以上设置，使所述发光层210作为所述薄膜晶体管的有源层可以与所述栅极240完全相对，从而保证所述栅极240对所述漏极230、源极220导通与否的精准控制，有助于进一步提高“发光TFT”的开关功能稳定性。\n\n[0042]在本申请的显示面板中，所述显示面板还包括公共电压端(图中未示出)和交流电压端(图中未示出)，所述源极220与所述公共电压端电性连接，所述漏极230与所述交流电压端电性连接。\n\n[0043]本实施例通过将所述源极220电连接公共电压端，使所述源极220作为发光二极管结构中的负极，用于向所述发光层210中注入电子；与此同理，将所述漏极230与交流电压端电性连接，使所述漏极230作为发光二极管结构中的正极，用于向所述发光层210中注入空穴，当给所述栅极240正电压时，所述源极220、漏极230导通，电子与空穴在所述发光层210内聚集结合进而发光。\n\n[0044]本实施例通过以上设置，可以使在所述发光层210中聚集结合的电子、空穴分别由所述公共电压端、交流电压端提供，进而实现电子、空穴注入、结合发光的可持续性、可控性，发光可控性更强。\n\n[0045]请参阅图1，在本申请的显示面板中，所述显示面板还包括栅绝缘层300，所述栅绝缘层300位于所述栅极240与所述发光层210之间。本实施例通过在所述栅极240与所述发光层210之间设置栅绝缘层300，实现所述栅极240与作为有源层的所述发光层210之间的绝缘效果，进而实现“发光TFT”的基础开关效果。\n\n[0046]在本实施例中，所述栅绝缘层300包括第一栅绝缘部310和第二栅绝缘部320，所述第一栅绝缘部310设置在所述源极220、所述发光层210及所述漏极230所形成的层叠结构上，所述第二栅绝缘部320设置在所述衬底100除所述层叠结构之外的区域上。\n\n[0047]本实施例通过所述第一栅绝缘部310将所述发光器件200中的所述漏极230、所述源极220和所述发光层210与所述显示面板上的其他膜层隔绝开来，除了实现基础的“开关”作用，还对由漏极230、源极220及发光层210构成的发光结构起到较好的绝缘保护作用。此外，本实施例将所述第二栅绝缘部320设置于所述衬底100除所述层叠结构之外的区域上，可以对设置在所述衬底100上的各类走线起到良好的绝缘保护效果，提高电路稳定性。\n\n[0048]在本实施例中，所述栅极240位于所述第二栅绝缘部320上且设置于所述第一栅绝缘部310远离所述层叠结构的至少一侧。\n\n[0049]在本实施例中，请参阅图1至图3，在垂直于所述显示面板且朝向所述显示面板的出光方向上，所述栅极240远离所述衬底100的侧面不低于所述发光层210远离所述衬底100的侧面。\n\n[0050]请参阅图2，图2是本申请所述显示面板的第二种整体结构示意图，在本实施例中，所述栅极240远离所述衬底100的侧面与所述发光层210远离所述衬底100的侧面齐平，以使所述发光层210可以全部对应于所述栅极240，保证薄膜晶体管的稳定开关性能。\n\n[0051]请参阅图3，图3是本申请所述显示面板的第三种整体结构示意图，在本实施例中，所述栅极240远离所述衬底100的侧面与所述漏极230远离所述衬底100的侧面齐平，以使所述栅极240对应于所述发光层210还有结余部分，减小因制程误差所导致的薄膜晶体管的开关性能不稳定的风险。\n\n[0052]请参阅图1，在本实施例中，所述栅极240远离所述衬底100的侧面与所述第二栅绝缘部320远离所述衬底100的侧面齐平。本实施例通过以上设置，可以在垂直于所述显示面板的方向上，使所述栅极240与所述源极220、所述发光层210及所述漏极230所形成的叠层结构等高设置，从而提高所述发光驱动层的表面平整度，有利于继续在所述发光驱动层上形成其他膜层。\n\n[0053]在本申请的显示面板中，所述发光层210至少包括第一半导体层和第二半导体层，所述第一半导体层和所述第二半导体层的材料不相同。在本实施例中，所述第一半导体层的材料可以包括GaAs，所述第二半导体层的材料可以包括AlGaAs。\n\n[0054]在本实施例中，所述第一半导体层和所述第二半导体层交替层叠设置。\n\n[0055]本实施例通过将不同材料构成的第一半导体层和第二半导体层交替层叠以形成发光层210，使所述发光层210可以在不同半导体材料层的界面处形成空间电荷区，即“PN结”结构，进而具备发光二极管的“单向导电”特性，即只有在所述栅极240给正电位时且漏极230给高电位时，“PN结”才导通，发光层210才进行发光。在所述栅极240给负电位时或所述漏极230给低电位时(漏极230电位低于源极220电位)，“PN结”不能导通，发光层210不发光。本实施例通过以上设置，可以使所述发光层210的发光与否可控与可调性更好，从而与所述发光驱动层中的薄膜晶体管结构形成良好的匹配度，实现高度集成。\n\n[0056]本申请实施例还提供一种显示面板的制作方法，用于制作以上所述显示面板，所述显示面板的制作方法包括：\n\n[0057]S100、请参阅图4至图8，在衬底100上形成发光器件200，所述发光器件200包括由半导体材料构成的发光层210及位于所述发光层210两侧的源极220和漏极230；\n\n[0058]S200、请参阅图9，在所述发光器件200的至少一侧形成栅极240，所述栅极240与所述发光器件200绝缘设置。\n\n[0059]本实施例通过以上步骤制作所述显示面板，使得所述“发光驱动层”中的薄膜晶体管(TFT)结构与发光二极管(LED)可以同时形成，既节省TFT所需的空间，而且整体的制作步骤简单，易于操作，制作难度及成本更低。\n\n[0060]在本实施例中，所述S100步骤包括：\n\n[0061]S110、请参阅图4，采用化学沉积法在所述衬底100上形成源电极层，进行第一次图案化处理，采用湿法蚀刻，形成源极220；\n\n[0062]S120、请参阅图5和图6，采用化学沉积法在所述源极220上形成半导体材料层，进行第二次图案化处理，干法蚀刻或湿法蚀刻，形成所述发光层210；\n\n[0063]S130、请参阅图7，采用化学沉积法在所述发光层210上形成漏电极层，进行第三次图案化处理，采用湿法蚀刻，形成漏极230；\n\n[0064]S140、请参阅图8，采用化学沉积法在所述漏极230上形成栅绝缘层300。\n\n[0065]本实施例通过将所述S100步骤分解为包括S110、S120、S130、S140四步，可以逐步在衬底100上形成源极220、发光层210、漏极230、栅绝缘层300，而且由于源极220、发光层210、漏极230在所述衬底100上的正投影完全重合，因此S110、S120、S130步骤中的图案化处理步骤可以采用同一张光罩，从而可以减少光罩的数量，有效降低制作难度及成本。\n\n[0066]需要说明的是，在本实施例中，当所述S120步骤中的半导体材料层也采用湿法蚀刻时，所述S110、S120、S130步骤中的图案化处理可以在最后进行一步处理，即只进行一次蚀刻，具体的步骤如下：\n\n[0067]所述S100步骤包括：\n\n[0068]S110、采用化学沉积法在所述衬底100上形成源电极层；\n\n[0069]S120、采用化学沉积法在所述源极220上形成半导体材料层；\n\n[0070]S130、采用化学沉积法在所述发光层210上形成漏电极层，进行图案化处理，采用湿法蚀刻，同时形成源极220、发光层210和漏极230；\n\n[0071]S140、采用化学沉积法在所述漏极230上形成栅绝缘层300。\n\n[0072]本实施例通过以上步骤，可以使所述源极220、发光层210和漏极230只通过一次蚀刻来形成，不仅节省了光罩，而且减少了蚀刻次数，从而更好地减少制作工序、降低制作成本。\n\n[0073]在本实施例中，所述S200步骤包括：\n\n[0074]S210、请参阅图7，采用化学沉积法在所述栅绝缘层300上形成栅电极层，进行第四次图案化处理，采用湿法蚀刻，形成栅极240。\n\n[0075]本申请实施例通过在衬底100上设置包括有发光器件200和栅极240的发光驱动层，发光驱动层将具有开关功能的薄膜晶体管(TFT)与具有发光功能的发光二极管(LED)结合起来并实现高度集成，兼备“发光”和“驱动”功能，形成了具有开关功能的发光薄膜晶体管，从而省略Micro-LED中芯片转移的步骤，巧妙规避了当前的技术难关，而且由于发光二极管(LED)的正负极是通过薄膜晶体管(TFT)的源漏极来形成，从而可省略或减小TFT所占的空间，实现高度集成。\n\n[0076]以上对本申请实施例所提供的一种显示面板及制作方法和移动终端进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。');
INSERT INTO `os_patent_instruction_text` VALUES (10992, 24046, '技术领域\n\n[0001]本发明涉及显示面板及显示装置的制造技术领域，具体涉及一种显示面板及显示面板的制备方法。\n\n背景技术\n\n[0002]随着显示面板制备技术以及制备工艺的不断提高，人们对制备形成的显示面板的性能及质量的要求也越来越高。\n\n[0003]近年来，依托于面板制备技术的不断发展，显示面板的性能以及质量不断提升，但是仍不能满足人们的预期。尤其对于微型发光二极管显示面板(Micro-LED)而言，还有许多制备工艺需要进行改进。Micro-LED具有自发光、高效率、低功耗、高稳定性而被认为是最有前途的下一代新型显示与发光器件之一。Micro-LED因其体积小、灵活性高、易于拆解合并等特点，能够部署在现有的从最小到最大尺寸的任何显示应用场合中。一般的Micro-LED显示面板的结构从上到下依次为：盖板、封装、Micro-LED发光器件以及阵列基板。在进行制备时，其制备流程主要为：先制作驱动的阵列基板，再将有机层上的Micro-LED通过巨量转移工艺转移到阵列基板上，再进行模组制程。但是，在进行巨量转移时，一般通过绑定工艺制程进行，或者可低温形成合金的金属绑定制程进行。这些绑定制程难度大，并且在转移和绑定的过程中Micro-LED芯片与阵列基板的粘结强度低，良率低。进而造成显示面板在使用的过程中容易出现脱落或者失效等问题，影响显示面板的正常发光。\n\n[0004]综上所述，现有技术中，在制备形成Micro-LED显示面板时，在对巨量的Micro-LED芯片进行转移时，Micro-LED容易与阵列基板之间发生脱落等失效问题，进而影响面板的性能。\n\n发明内容\n\n[0005]本发明实施例提供一种显示面板及显示面板的制备方法，以有效的对显示面板的制备工艺进行改进，防止在转移Micro-LED时，Micro-LED不能与阵列基板之间紧密贴合，并且防止Micro-LED容易出现失效等问题。\n\n[0006]为解决上述技术问题，本发明实施例提供的技术方法如下：\n\n[0007]本发明实施例的第一方面，提供了一种显示面板的制备方法，包括如下步骤：\n\n[0008]提供一衬底；\n\n[0009]将多个发光二极管转移至所述衬底上；\n\n[0010]对所述发光二极管进行固定，并形成一发光器件层；\n\n[0011]对所述发光器件层蚀刻，以蚀刻出每个所述发光二极管的端子；\n\n[0012]在所述发光器件层上制备金属层，并将所述金属层与所述发光二极管的端子对应连接；\n\n[0013]在所述金属层上制备阵列基板，并在所述阵列基板上制备盖板，最终形成所述显示面板。\n\n[0014]根据本发明一实施例，所述对所述发光二极管进行填充的步骤，包括：\n\n[0015]提供一填充材料；\n\n[0016]将所述填充材料填充至相邻的所述发光二极管的间隙中，并使所述填充材料覆盖所述发光二极管，以形成一包裹层；\n\n[0017]对所述包裹层进行平整，最终形成所述发光器件层。\n\n[0018]根据本发明一实施例，所述对所述包裹层进行平整的步骤，包括：\n\n[0019]对所述包裹层的出光一侧的表面进行平整，使所述出光一侧的表面与所述衬底的表面相平行。\n\n[0020]根据本发明一实施例，所述填充材料包括有机绝缘材料和无机绝缘材料。\n\n[0021]根据本发明一实施例，所述对所述发光器件层蚀刻的步骤，包括：\n\n[0022]确定所述发光器件层内每个所述发光二极管的端子所在的区域；\n\n[0023]采用黄光制程对所述发光二极管的端子所在的区域进行蚀刻，暴露出每个所述发光二极管的阴极端子和阳极端子。\n\n[0024]根据本发明一实施例，制备所述金属层和所述阵列基板的步骤还包括：\n\n[0025]所述金属层制备完成后，在所述金属层上制备形成一有机层；\n\n[0026]对所述有机层进行蚀刻，使所述发光二极管的阴极端子对应的金属层裸露出；\n\n[0027]在所述有机层上制备所述阵列基板，并使所述阵列基板的漏极与裸露出的所述金属层电连接。\n\n[0028]根据本发明一实施例，所述发光二极管转移至所述衬底上的步骤还包括：\n\n[0029]将所述发光二极管转移至所述衬底上，并阵列设置；\n\n[0030]对所述发光二极管进行检测，并对不导通的所述发光二极管进行修复或更换。\n\n[0031]根据本发明实施例的第二方面，还提供一种显示面板，包括：\n\n[0032]阵列基板；以及\n\n[0033]发光器件层，所述发光器件层设置在所述阵列基板上；\n\n[0034]其中，所述发光器件层通过本发明实施例中提供的所述的制备方法制备得到，所述发光器件层包括多个发光二极管，所述发光二极管与所述阵列基板电连接。\n\n[0035]根据本发明一实施例，所述显示面板还包括盖板，所述盖板设置在所述发光器件层上。\n\n[0036]根据本发明一实施例，所述发光二极管阵列的设置在所述发光器件层内。\n\n[0037]综上所述，本发明实施例的有益效果为：\n\n[0038]本发明实施例提供一种显示面板及显示面板的制备方法。本发明实施例中，在制备形成显示面板时，通过将微型发光二极管巨量转移至衬底上，并在该衬底上制备形成发光器件层，同时对发光器件层进行蚀刻，使发光器件层内发光二极管的端子暴露出，进而再在该发光器件层上制备形成阵列基板，并使阵列基板的电极与发光二极管的端子对应连接，并在阵列基板上制备形成盖板并对其进行封装，最终形成本发明实施例中提供的显示面板。本发明实施例中提供的制备方法有效的避免了现有工艺中在对巨量的发光二极管进行转移时，微型发光二极管容易发生脱落等失效问题，进而有效的提高了显示面板的性能以及质量。\n\n附图说明\n\n[0039]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果更显而易见。\n\n[0040]图1为现有技术中提供的显示面板的制备工艺示意图；\n\n[0041]图2为本发明实施例中提供的一种显示面板的结构示意图；\n\n[0042]图3为本发明实施例中提供的显示面板的膜层结构示意图；\n\n[0043]图4为本发明实施例提供的一种显示面板的制备方法流程示意图；\n\n[0044]图5为本发明实施例提供的显示面板的制备方法对应的示意图；\n\n[0045]图6为本发明实施例提供的发光器件层的结构示意图；\n\n[0046]图7为本发明实施例提供的显示面板制备流程对应的膜层结构示意图；\n\n[0047]图8为本发明实施例提供的又一显示面板的膜层结构示意图。\n\n具体实施方式\n\n[0048]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0049]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。\n\n[0050]随着显示面板制备技术的不断发展，人们对显示面板的各项性能以及质量均提出了更高的要求。不仅希望显示面板的制备工艺也更简单，同时还希望在该制备工艺下制备形成的面板具有较好的综合性能。\n\n[0051]如图1所示，图1为现有技术中提供的显示面板的制备工艺示意图。现有技术中，在制备形成显示面板时，首先制备形成一阵列基板101，该阵列基板101为薄膜晶体管阵列基板。阵列基板101制备完成后，将发光二极管100转移至该阵列基板101上，在转移时，由于每个阵列基板101上需要设置多个发光二极管100。因此，当将该巨量的微型发光二极管100转移至该阵列基板101上时，一般通过粘贴绑定工艺进行固定，而该绑定工艺在发光二极管100转移完成后，不能保证发光二极管100与阵列基板101之间的紧密粘接性能，发光二极管100容易从阵列基板101上脱落，进而造成显示面板102存在一定的质量问题。\n\n[0052]因此，本发明实施例提供一种显示面板及显示面板的制备方法，以有效的改善在制备形成显示面板的过程中，保证巨量转移的发光二极管能较好的粘贴在阵列基板上，从而保证显示面板的性能以及质量。\n\n[0053]如图2所示，图2为本发明实施例中提供的一种显示面板的结构示意图。显示面板包括阵列基板100、发光器件层101以及盖板层102。其中，发光器件层101设置在阵列基板100上，盖板层102设置在发光器件层101上，本发明实施例中阵列基板100为薄膜晶体管阵列基板，且在发光器件层101内设置有多个发光二极管1011，该发光二极管1011可阵列的设置在发光器件层101内。同时，该发光二极管1011的电极端子与阵列基板100电连接，当显示面板发光显示时，阵列基板100向该发光二极管1011提供驱动控制信号，以实现器件的正常工作。\n\n[0054]进一步的，如图3所示，图3为本发明实施例中提供的显示面板的膜层结构示意图。具体的，显示面板包括衬底31、第一有机层11、发光器件层101、金属层112以及阵列基板100。其中，第一有机层11设置在衬底31上，发光器件层101设置在第一有机层11上，且金属层112设置在发光器件层101上，同时，阵列基板100设置在金属层112上，并覆盖该金属层112。\n\n[0055]本发明实施例中，衬底100可为玻璃基板或者其他起支撑作用的膜层，第一有机层11可为聚酰亚胺膜层，第一有机层11主要起到缓冲以及粘接的作用。\n\n[0056]本发明实施例中，在发光器件层101内还包括多个发光二极管1011。具体的，发光二极管1011可阵列的设置在发光器件层101内，其中，可矩形阵列结构设置在发光器件层101内，同时，相邻的两个发光二极管1011之间的距离可相同。\n\n[0057]进一步的，本发明实施例中，在设置发光二极管1011时，发光二极管1011直接设置在发光器件层101内，即该发光器件层101将发光二极管1011完全包裹住。并且，该发光二极管1011的一端面可直接贴附在第一有机层11上，该第一有机层11可为发光二极管1011的出光侧对应的膜层。\n\n[0058]这样，所有的发光二极管1011在第一有机层11的一侧具有一齐平的平面。同时，本发明实施例中的发光二极管1011还包括两个电极端子：阳极端子1012和阴极端子1013。通过阳极端子1012和阴极端子1013向发光二极管1011传输驱动信号，并使发光二极管1011正常发光。\n\n[0059]同时，在阳极端子1012和阴极端子1013上，对应蚀刻形成有开口结构，金属层112通过该开口结构与发光二极管1011的上述两端子进行电连接。同时，在金属层112上还设置有第二有机层103，第二有机层103覆盖金属层112，且第二有机层103的上表面为一平面结构，并且在与发光二极管1011的阳极端子1012对应的位置处蚀刻有第二过孔33。\n\n[0060]进一步的，在第二有机层103上还设置有阵列基板100，阵列基板100与发光器件层101电连接。具体的，阵列基板100内的薄膜晶体管109的电极层111通过该第二过孔33与金属层112电连接，从而实现薄膜晶体管109与发光二极管1011的连接，并向每个发光二极管1011提供驱动信号。\n\n[0061]本发明实施例中，在阵列基板内设置有多个薄膜晶体管109。薄膜晶体管109内设置有有源层、源极、漏极、栅极层以及对应的各层间介质层。其中，在设置薄膜晶体管109的上述各膜层结构时，可按照现有技术中的薄膜晶体管的制备工艺进行制备，同时，本发明实施例中，薄膜晶体管109内还可设置双栅极的结构，具体的制备工艺按照现有的薄膜晶体管的制备工艺进行制备，这里不再详细赘述。\n\n[0062]进一步的，阵列基板100还包括第一平坦化层106、第二平坦化层107以及第二金属层130。其中，第一平坦化层106设置在薄膜晶体管的电极层111上，并覆盖电极111，第二金属层130设置在第一平坦化层106上，第二平坦化层107设置在第二金属层130上，且覆盖该第二金属层130。同时，第二金属层130在对应的位置区域内蚀刻形成有过孔结构，第二金属层130通过对应的过孔结构与薄膜晶体管109内的电极以及漏极或源极对应连接，从而实现数据信号的传输。\n\n[0063]优选的，本发明实施例还提供一种显示面板的制备方法，具体的，如图4所示，图4为本发明实施例提供的一种显示面板的制备方法流程示意图。在制备形成本发明实施例的显示面板时，包括如下步骤：\n\n[0064]S100：提供一衬底；\n\n[0065]S101：将多个发光二极管转移至所述衬底上；\n\n[0066]S102：对所述发光二极管进行填充，并形成一发光器件层；\n\n[0067]S103：对所述发光器件层蚀刻，以蚀刻出每个所述发光二极管的端子；\n\n[0068]S104：在所述发光器件层上制备金属层，并将所述金属层与所述发光二极管的端子对应连接；\n\n[0069]S105：在所述金属层上制备阵列基板，并在所述阵列基板上制备盖板，最终形成所述显示面板。\n\n[0070]具体的，如图5所示，图5为本发明实施例提供的显示面板的制备方法对应的示意图。首先提供一衬底500，本发明实施例中，该衬底500可为玻璃或者其他有机以及无机的衬底层，该衬底500主要起到支撑以及放置物体的作用，通过借助该衬底500以实现发光二极管501的排布。\n\n[0071]同时，将发光二极管501转移至该衬底500上。本发明实施例中，在放置多个发光二极管501时，多个发光二极管501可阵列排布在衬底500上，如在衬底500的行和列上阵列排布。阵列排布完成后，形成如图5中所示的结构。\n\n[0072]排布完成后，对该发光二极管501以及衬底500进行填充，并使发光二极管501固定。具体的，选取有机或者无机材料的填充材料504，同时，该填充材料为绝缘材料。优选的，该填充材料504可为光阻蚀刻等材料。将该填充材料504填涂在相邻的发光二极管501之间的间隙中，当衬底500上为排布发光二极管501的区域填充完成后，继续填涂该填充材料，并使填充材料完全覆盖每个发光二极管501。\n\n[0073]如图6所示，图6为本发明实施例提供的发光器件层的结构示意图。填充完成后，对该填充材料进行固化，并使填充材料504形成一包裹层502，这样，多个发光二极管501便被固定在包裹层502内。\n\n[0074]固化完成后，对包裹层502的上表面进行平整，即对该包裹层502朝向出光一侧的表面进行平整，使该表面为一平面，该平面与衬底500的一表面相平行。以便后续其他膜层的制备。\n\n[0075]如图7所示，图7为本发明实施例提供的显示面板制备流程对应的膜层结构示意图。填充固化并且平整完成后，对发光器件层505进行蚀刻。具体的，确定每个发光二极管501的端子所在的区域，对该区域进行蚀刻。具体的，可采用黄光制程对发光二极管501的端子区域进行蚀刻，以暴露出每个发光二极管501的引脚，如阳极端子1012、阴极端子1013。在蚀刻过程中，会在阳极端子1012和阴极端子1013上方形成对应的过孔结构。\n\n[0076]发光二极管501的阳极端子1012和阴极端子1013暴露出后，对每个发光二极管进行检测，以确定发光二极管501的好坏，当检测到对应的发光二极管不能正常工作时，对该坏的发光二极管501进行修复或者更换，从而通过检测，以保证发光二极管的性能。\n\n[0077]蚀刻完成后，在该发光器件层上制备并形成一金属层112。其中，金属层112通过对应的过孔结构与发光二极管501的阳极端子1012和阴极端子1013。\n\n[0078]进一步的，如图8所示，图8为本发明实施例提供的又一显示面板的膜层结构示意图。同时结合图1中的面板的结构示意图，本发明实施例中，金属层112制备完成后，再在金属层112上制备形成一第二有机层103，并使第二有机层103覆盖金属层112。第二有机层103制备完成后，再在第二有机层103上制备形成一第三有机层104。其中，第二有机层103和第三有机层104制备完成后，对第二有机层103和第三有机层104进行蚀刻，并在发光二极管的阴极端子1013对应的区域内形成第二过孔33。\n\n[0079]本发明实施例中，继续在第三有机层104上制备形成阵列基板100。其中，阵列基板100包括薄膜晶体管109的源极、栅极、漏极以及各层间介质层105。本发明实施例中，阵列基板100的制备工艺可按照常用工艺进行制备，这里不再详细赘述。\n\n[0080]进一步的，在阵列基板100内还可设置第二金属层130，其中，第二金属层130可设置在第一平坦化层106上。本发明实施例中，在设置第二金属层130时，第二金属层130可设置为面状的结构，通过将第二金属层130设置为面状的结构，以有效的降低显示面板内部的阻抗。并且在第一平坦化层106上继续设置第二平坦化层107，同时，还可继续再在第二平坦化层107上制备形成一盖板，并完成对显示面板的封装。本发明实施例中，在制备形成该阵列基板100时，薄膜晶体管可为单栅极或者双栅极薄膜晶体管，具体的，可根据实际产品的需要进行设置。\n\n[0081]本发明实施例中，在制备形成显示面板时，将发光二极管转移至衬底上，并将该发光二极管贴附并固定在该衬底上，并形成发光器件层，并再在该发光器件层上再制备阵列基板，并使阵列基板与发光二极管相连接。因此，本发明实施例中制备得到的显示面板中的发光二极管的贴合效果更好，有效的保证了显示面板的性能以及质量。\n\n[0082]以上对本发明实施例所提供的一种显示面板以及显示面板的制备方法进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。', '技术领域\n\n[0001]本发明涉及显示面板及显示装置的制造技术领域，具体涉及一种显示面板及显示面板的制备方法。\n\n背景技术\n\n[0002]随着显示面板制备技术以及制备工艺的不断提高，人们对制备形成的显示面板的性能及质量的要求也越来越高。\n\n[0003]近年来，依托于面板制备技术的不断发展，显示面板的性能以及质量不断提升，但是仍不能满足人们的预期。尤其对于微型发光二极管显示面板(Micro-LED)而言，还有许多制备工艺需要进行改进。Micro-LED具有自发光、高效率、低功耗、高稳定性而被认为是最有前途的下一代新型显示与发光器件之一。Micro-LED因其体积小、灵活性高、易于拆解合并等特点，能够部署在现有的从最小到最大尺寸的任何显示应用场合中。一般的Micro-LED显示面板的结构从上到下依次为：盖板、封装、Micro-LED发光器件以及阵列基板。在进行制备时，其制备流程主要为：先制作驱动的阵列基板，再将有机层上的Micro-LED通过巨量转移工艺转移到阵列基板上，再进行模组制程。但是，在进行巨量转移时，一般通过绑定工艺制程进行，或者可低温形成合金的金属绑定制程进行。这些绑定制程难度大，并且在转移和绑定的过程中Micro-LED芯片与阵列基板的粘结强度低，良率低。进而造成显示面板在使用的过程中容易出现脱落或者失效等问题，影响显示面板的正常发光。\n\n[0004]综上所述，现有技术中，在制备形成Micro-LED显示面板时，在对巨量的Micro-LED芯片进行转移时，Micro-LED容易与阵列基板之间发生脱落等失效问题，进而影响面板的性能。\n\n发明内容\n\n[0005]本发明实施例提供一种显示面板及显示面板的制备方法，以有效的对显示面板的制备工艺进行改进，防止在转移Micro-LED时，Micro-LED不能与阵列基板之间紧密贴合，并且防止Micro-LED容易出现失效等问题。\n\n[0006]为解决上述技术问题，本发明实施例提供的技术方法如下：\n\n[0007]本发明实施例的第一方面，提供了一种显示面板的制备方法，包括如下步骤：\n\n[0008]提供一衬底；\n\n[0009]将多个发光二极管转移至所述衬底上；\n\n[0010]对所述发光二极管进行固定，并形成一发光器件层；\n\n[0011]对所述发光器件层蚀刻，以蚀刻出每个所述发光二极管的端子；\n\n[0012]在所述发光器件层上制备金属层，并将所述金属层与所述发光二极管的端子对应连接；\n\n[0013]在所述金属层上制备阵列基板，并在所述阵列基板上制备盖板，最终形成所述显示面板。\n\n[0014]根据本发明一实施例，所述对所述发光二极管进行填充的步骤，包括：\n\n[0015]提供一填充材料；\n\n[0016]将所述填充材料填充至相邻的所述发光二极管的间隙中，并使所述填充材料覆盖所述发光二极管，以形成一包裹层；\n\n[0017]对所述包裹层进行平整，最终形成所述发光器件层。\n\n[0018]根据本发明一实施例，所述对所述包裹层进行平整的步骤，包括：\n\n[0019]对所述包裹层的出光一侧的表面进行平整，使所述出光一侧的表面与所述衬底的表面相平行。\n\n[0020]根据本发明一实施例，所述填充材料包括有机绝缘材料和无机绝缘材料。\n\n[0021]根据本发明一实施例，所述对所述发光器件层蚀刻的步骤，包括：\n\n[0022]确定所述发光器件层内每个所述发光二极管的端子所在的区域；\n\n[0023]采用黄光制程对所述发光二极管的端子所在的区域进行蚀刻，暴露出每个所述发光二极管的阴极端子和阳极端子。\n\n[0024]根据本发明一实施例，制备所述金属层和所述阵列基板的步骤还包括：\n\n[0025]所述金属层制备完成后，在所述金属层上制备形成一有机层；\n\n[0026]对所述有机层进行蚀刻，使所述发光二极管的阴极端子对应的金属层裸露出；\n\n[0027]在所述有机层上制备所述阵列基板，并使所述阵列基板的漏极与裸露出的所述金属层电连接。\n\n[0028]根据本发明一实施例，所述发光二极管转移至所述衬底上的步骤还包括：\n\n[0029]将所述发光二极管转移至所述衬底上，并阵列设置；\n\n[0030]对所述发光二极管进行检测，并对不导通的所述发光二极管进行修复或更换。\n\n[0031]根据本发明实施例的第二方面，还提供一种显示面板，包括：\n\n[0032]阵列基板；以及\n\n[0033]发光器件层，所述发光器件层设置在所述阵列基板上；\n\n[0034]其中，所述发光器件层通过本发明实施例中提供的所述的制备方法制备得到，所述发光器件层包括多个发光二极管，所述发光二极管与所述阵列基板电连接。\n\n[0035]根据本发明一实施例，所述显示面板还包括盖板，所述盖板设置在所述发光器件层上。\n\n[0036]根据本发明一实施例，所述发光二极管阵列的设置在所述发光器件层内。\n\n[0037]综上所述，本发明实施例的有益效果为：\n\n[0038]本发明实施例提供一种显示面板及显示面板的制备方法。本发明实施例中，在制备形成显示面板时，通过将微型发光二极管巨量转移至衬底上，并在该衬底上制备形成发光器件层，同时对发光器件层进行蚀刻，使发光器件层内发光二极管的端子暴露出，进而再在该发光器件层上制备形成阵列基板，并使阵列基板的电极与发光二极管的端子对应连接，并在阵列基板上制备形成盖板并对其进行封装，最终形成本发明实施例中提供的显示面板。本发明实施例中提供的制备方法有效的避免了现有工艺中在对巨量的发光二极管进行转移时，微型发光二极管容易发生脱落等失效问题，进而有效的提高了显示面板的性能以及质量。\n\n附图说明\n\n[0039]下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果更显而易见。\n\n[0040]图1为现有技术中提供的显示面板的制备工艺示意图；\n\n[0041]图2为本发明实施例中提供的一种显示面板的结构示意图；\n\n[0042]图3为本发明实施例中提供的显示面板的膜层结构示意图；\n\n[0043]图4为本发明实施例提供的一种显示面板的制备方法流程示意图；\n\n[0044]图5为本发明实施例提供的显示面板的制备方法对应的示意图；\n\n[0045]图6为本发明实施例提供的发光器件层的结构示意图；\n\n[0046]图7为本发明实施例提供的显示面板制备流程对应的膜层结构示意图；\n\n[0047]图8为本发明实施例提供的又一显示面板的膜层结构示意图。\n\n具体实施方式\n\n[0048]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0049]在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。\n\n[0050]随着显示面板制备技术的不断发展，人们对显示面板的各项性能以及质量均提出了更高的要求。不仅希望显示面板的制备工艺也更简单，同时还希望在该制备工艺下制备形成的面板具有较好的综合性能。\n\n[0051]如图1所示，图1为现有技术中提供的显示面板的制备工艺示意图。现有技术中，在制备形成显示面板时，首先制备形成一阵列基板101，该阵列基板101为薄膜晶体管阵列基板。阵列基板101制备完成后，将发光二极管100转移至该阵列基板101上，在转移时，由于每个阵列基板101上需要设置多个发光二极管100。因此，当将该巨量的微型发光二极管100转移至该阵列基板101上时，一般通过粘贴绑定工艺进行固定，而该绑定工艺在发光二极管100转移完成后，不能保证发光二极管100与阵列基板101之间的紧密粘接性能，发光二极管100容易从阵列基板101上脱落，进而造成显示面板102存在一定的质量问题。\n\n[0052]因此，本发明实施例提供一种显示面板及显示面板的制备方法，以有效的改善在制备形成显示面板的过程中，保证巨量转移的发光二极管能较好的粘贴在阵列基板上，从而保证显示面板的性能以及质量。\n\n[0053]如图2所示，图2为本发明实施例中提供的一种显示面板的结构示意图。显示面板包括阵列基板100、发光器件层101以及盖板层102。其中，发光器件层101设置在阵列基板100上，盖板层102设置在发光器件层101上，本发明实施例中阵列基板100为薄膜晶体管阵列基板，且在发光器件层101内设置有多个发光二极管1011，该发光二极管1011可阵列的设置在发光器件层101内。同时，该发光二极管1011的电极端子与阵列基板100电连接，当显示面板发光显示时，阵列基板100向该发光二极管1011提供驱动控制信号，以实现器件的正常工作。\n\n[0054]进一步的，如图3所示，图3为本发明实施例中提供的显示面板的膜层结构示意图。具体的，显示面板包括衬底31、第一有机层11、发光器件层101、金属层112以及阵列基板100。其中，第一有机层11设置在衬底31上，发光器件层101设置在第一有机层11上，且金属层112设置在发光器件层101上，同时，阵列基板100设置在金属层112上，并覆盖该金属层112。\n\n[0055]本发明实施例中，衬底100可为玻璃基板或者其他起支撑作用的膜层，第一有机层11可为聚酰亚胺膜层，第一有机层11主要起到缓冲以及粘接的作用。\n\n[0056]本发明实施例中，在发光器件层101内还包括多个发光二极管1011。具体的，发光二极管1011可阵列的设置在发光器件层101内，其中，可矩形阵列结构设置在发光器件层101内，同时，相邻的两个发光二极管1011之间的距离可相同。\n\n[0057]进一步的，本发明实施例中，在设置发光二极管1011时，发光二极管1011直接设置在发光器件层101内，即该发光器件层101将发光二极管1011完全包裹住。并且，该发光二极管1011的一端面可直接贴附在第一有机层11上，该第一有机层11可为发光二极管1011的出光侧对应的膜层。\n\n[0058]这样，所有的发光二极管1011在第一有机层11的一侧具有一齐平的平面。同时，本发明实施例中的发光二极管1011还包括两个电极端子：阳极端子1012和阴极端子1013。通过阳极端子1012和阴极端子1013向发光二极管1011传输驱动信号，并使发光二极管1011正常发光。\n\n[0059]同时，在阳极端子1012和阴极端子1013上，对应蚀刻形成有开口结构，金属层112通过该开口结构与发光二极管1011的上述两端子进行电连接。同时，在金属层112上还设置有第二有机层103，第二有机层103覆盖金属层112，且第二有机层103的上表面为一平面结构，并且在与发光二极管1011的阳极端子1012对应的位置处蚀刻有第二过孔33。\n\n[0060]进一步的，在第二有机层103上还设置有阵列基板100，阵列基板100与发光器件层101电连接。具体的，阵列基板100内的薄膜晶体管109的电极层111通过该第二过孔33与金属层112电连接，从而实现薄膜晶体管109与发光二极管1011的连接，并向每个发光二极管1011提供驱动信号。\n\n[0061]本发明实施例中，在阵列基板内设置有多个薄膜晶体管109。薄膜晶体管109内设置有有源层、源极、漏极、栅极层以及对应的各层间介质层。其中，在设置薄膜晶体管109的上述各膜层结构时，可按照现有技术中的薄膜晶体管的制备工艺进行制备，同时，本发明实施例中，薄膜晶体管109内还可设置双栅极的结构，具体的制备工艺按照现有的薄膜晶体管的制备工艺进行制备，这里不再详细赘述。\n\n[0062]进一步的，阵列基板100还包括第一平坦化层106、第二平坦化层107以及第二金属层130。其中，第一平坦化层106设置在薄膜晶体管的电极层111上，并覆盖电极111，第二金属层130设置在第一平坦化层106上，第二平坦化层107设置在第二金属层130上，且覆盖该第二金属层130。同时，第二金属层130在对应的位置区域内蚀刻形成有过孔结构，第二金属层130通过对应的过孔结构与薄膜晶体管109内的电极以及漏极或源极对应连接，从而实现数据信号的传输。\n\n[0063]优选的，本发明实施例还提供一种显示面板的制备方法，具体的，如图4所示，图4为本发明实施例提供的一种显示面板的制备方法流程示意图。在制备形成本发明实施例的显示面板时，包括如下步骤：\n\n[0064]S100：提供一衬底；\n\n[0065]S101：将多个发光二极管转移至所述衬底上；\n\n[0066]S102：对所述发光二极管进行填充，并形成一发光器件层；\n\n[0067]S103：对所述发光器件层蚀刻，以蚀刻出每个所述发光二极管的端子；\n\n[0068]S104：在所述发光器件层上制备金属层，并将所述金属层与所述发光二极管的端子对应连接；\n\n[0069]S105：在所述金属层上制备阵列基板，并在所述阵列基板上制备盖板，最终形成所述显示面板。\n\n[0070]具体的，如图5所示，图5为本发明实施例提供的显示面板的制备方法对应的示意图。首先提供一衬底500，本发明实施例中，该衬底500可为玻璃或者其他有机以及无机的衬底层，该衬底500主要起到支撑以及放置物体的作用，通过借助该衬底500以实现发光二极管501的排布。\n\n[0071]同时，将发光二极管501转移至该衬底500上。本发明实施例中，在放置多个发光二极管501时，多个发光二极管501可阵列排布在衬底500上，如在衬底500的行和列上阵列排布。阵列排布完成后，形成如图5中所示的结构。\n\n[0072]排布完成后，对该发光二极管501以及衬底500进行填充，并使发光二极管501固定。具体的，选取有机或者无机材料的填充材料504，同时，该填充材料为绝缘材料。优选的，该填充材料504可为光阻蚀刻等材料。将该填充材料504填涂在相邻的发光二极管501之间的间隙中，当衬底500上为排布发光二极管501的区域填充完成后，继续填涂该填充材料，并使填充材料完全覆盖每个发光二极管501。\n\n[0073]如图6所示，图6为本发明实施例提供的发光器件层的结构示意图。填充完成后，对该填充材料进行固化，并使填充材料504形成一包裹层502，这样，多个发光二极管501便被固定在包裹层502内。\n\n[0074]固化完成后，对包裹层502的上表面进行平整，即对该包裹层502朝向出光一侧的表面进行平整，使该表面为一平面，该平面与衬底500的一表面相平行。以便后续其他膜层的制备。\n\n[0075]如图7所示，图7为本发明实施例提供的显示面板制备流程对应的膜层结构示意图。填充固化并且平整完成后，对发光器件层505进行蚀刻。具体的，确定每个发光二极管501的端子所在的区域，对该区域进行蚀刻。具体的，可采用黄光制程对发光二极管501的端子区域进行蚀刻，以暴露出每个发光二极管501的引脚，如阳极端子1012、阴极端子1013。在蚀刻过程中，会在阳极端子1012和阴极端子1013上方形成对应的过孔结构。\n\n[0076]发光二极管501的阳极端子1012和阴极端子1013暴露出后，对每个发光二极管进行检测，以确定发光二极管501的好坏，当检测到对应的发光二极管不能正常工作时，对该坏的发光二极管501进行修复或者更换，从而通过检测，以保证发光二极管的性能。\n\n[0077]蚀刻完成后，在该发光器件层上制备并形成一金属层112。其中，金属层112通过对应的过孔结构与发光二极管501的阳极端子1012和阴极端子1013。\n\n[0078]进一步的，如图8所示，图8为本发明实施例提供的又一显示面板的膜层结构示意图。同时结合图1中的面板的结构示意图，本发明实施例中，金属层112制备完成后，再在金属层112上制备形成一第二有机层103，并使第二有机层103覆盖金属层112。第二有机层103制备完成后，再在第二有机层103上制备形成一第三有机层104。其中，第二有机层103和第三有机层104制备完成后，对第二有机层103和第三有机层104进行蚀刻，并在发光二极管的阴极端子1013对应的区域内形成第二过孔33。\n\n[0079]本发明实施例中，继续在第三有机层104上制备形成阵列基板100。其中，阵列基板100包括薄膜晶体管109的源极、栅极、漏极以及各层间介质层105。本发明实施例中，阵列基板100的制备工艺可按照常用工艺进行制备，这里不再详细赘述。\n\n[0080]进一步的，在阵列基板100内还可设置第二金属层130，其中，第二金属层130可设置在第一平坦化层106上。本发明实施例中，在设置第二金属层130时，第二金属层130可设置为面状的结构，通过将第二金属层130设置为面状的结构，以有效的降低显示面板内部的阻抗。并且在第一平坦化层106上继续设置第二平坦化层107，同时，还可继续再在第二平坦化层107上制备形成一盖板，并完成对显示面板的封装。本发明实施例中，在制备形成该阵列基板100时，薄膜晶体管可为单栅极或者双栅极薄膜晶体管，具体的，可根据实际产品的需要进行设置。\n\n[0081]本发明实施例中，在制备形成显示面板时，将发光二极管转移至衬底上，并将该发光二极管贴附并固定在该衬底上，并形成发光器件层，并再在该发光器件层上再制备阵列基板，并使阵列基板与发光二极管相连接。因此，本发明实施例中制备得到的显示面板中的发光二极管的贴合效果更好，有效的保证了显示面板的性能以及质量。\n\n[0082]以上对本发明实施例所提供的一种显示面板以及显示面板的制备方法进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10993, 24047, '技术领域\n\n[0001]本发明涉及显示技术领域，特别涉及一种背光模组。\n\n背景技术\n\n[0002]液晶面板(LCD)的背光源在技术和市场的不断发展中更新换代，从最初的冷阴极荧光灯管背光(CCFL)到贴片式背光(SMD LED)、量子点背光，再到如今的Mini-LED背光。背光技术的不断发展使得LCD的显示效果得到不断提升，让人们得以享受超高清的视觉盛宴。相较于传统的背光源技术，Mini-LED背光拥有更多优势，适合高端液晶显示器的解决方案。\n\n[0003]其主要优势如下：①可以直接采用R/G/B三色的LED模组，实现R/G/B三原色无缺失的显示效果，且可覆盖100％BT2020的宽色域，色彩的鲜艳度媲美OLED。②Mini LED可以实现高亮度大于1000nit下散热均匀，这是传统分立LED器件方案无法做到的。③Mini LED背光可以做到直下式超薄的LCD显示，这在轻薄的便携式消费电子中应用广阔，例如AR/VR眼镜、手机、笔记本电脑等。④Mini LED结合精细的局部背光调节(Local Dimming)，可以实现超高对比度(1000000:1)，让黑的更深邃，亮的更明亮。\n\n[0004]Mini-LED背光由LED芯片构成，本身LED芯片的发光存在中心灯口较周边区域亮的问题，同时LED芯片与LED芯片之间的光与LED芯片上的光强分布也不一致，导致Mini-LED背光发出的光并不均匀。为了解决Mini-LED背光混光不均的问题，通常会在Mini-LED上增加扩散板或者分光膜片。由于Mini-LED需要一定的光程才能确保混光均匀，通常扩散板和分光膜片的厚度在0.4mm左右，加上增亮膜片、保护膜片和背光源的厚度，Mini-LED显示模组的厚度会在2mm以上，与传统的LCD背光显示模组相比在厚度上无优势，因此对于轻便显示器的开发并无明显优势，需要改进。\n\n发明内容\n\n[0005]本申请依据现有技术问题，提供一种能够解决LED芯片的发光存在中心灯口较周边区域亮的问题的背光模组，且该背光模组的厚度较薄。\n\n[0006]本发明提供的技术方案如下：\n\n[0007]本发明实施例提供一种背光模组，该背光模组包括背板、位于所述背板上的Mini-LED背光源、以及位于所述Mini-LED背光源上的光波导层，所述光波导层包括反射型纳米结构和覆盖所述反射型纳米结构的半透射半反射膜层。\n\n[0008]根据本发明一优选实施例，所述Mini-LED背光源包括阵列设置的Mini-LED芯片和覆盖所述Mini-LED芯片的封装层，所述反射型纳米结构包括光偶进单元和光偶出单元，所述光偶进单元与所述Mini-LED芯片出光面的中心位置对位设置，所述光偶出单元位于所述Mini-LED芯片的两侧。\n\n[0009]根据本发明一优选实施例，所述光偶进单元和所述光偶出单元的形状均为线栅、棱镜或微透镜中一种或一种以上组合结构，所述光偶进单元和所述光偶出单元的折射率均大于或等于1.7。\n\n[0010]根据本发明一优选实施例，所述光偶出单元、所述光偶进单元、所述光偶出单元和所述半透射半反射层的材料均包括铌酸锂，磷化铟(InP)、磷化砷铟镓(InGaAsP)、二氧化硅(SiO2)和硅中一种材料或一种以上材料。\n\n[0011]根据本发明一优选实施例，在每个所述反射型纳米结构中，两个所述光偶出单元匹配一个所述光偶进单元，且两个所述光偶出单元位于一个所述光偶进单元的两侧。\n\n[0012]根据本发明一优选实施例，所述光偶进单元和所述光偶出单元均采用光刻工艺或者纳米压印工艺制备而成，相邻的所述光偶出单元和所述光偶进单元之间的间距为2um至5um。\n\n[0013]根据本发明一优选实施例，所述光波导层的厚度为0.01um至2um。\n\n[0014]根据本发明一优选实施例，所述Mini-LED背光源还包括与所述Mini-LED芯片同层设置的反射块，且所述反射块位于所述相邻所述Mini-LED芯片之间。\n\n[0015]根据本发明一优选实施例，所述Mini-LED背光源靠近所述背板一侧形成有具有反射面的凹槽，所述凹槽内填充有金属银、钼、镁、铝中一种或一种以上金属材料，形成所述反射块。\n\n[0016]根据本发明一优选实施例，所述反射块的截面形状为等腰三角形，且所述等腰三角形的顶角垂直插入所述封装层的内部，所述等腰三角形的底边贴合于所述背板表面，当光线入射到该等腰三角形的两腰上时，会发生全反射，将光线导出所述封装层。\n\n[0017]本发明的有益效果：本发明实施例提供一种背光模组，该背光模组包括背板、位于背板上的Mini-LED背光源、以及位于Mini-LED背光源上的光波导层，光波导层包括反射型纳米结构和覆盖反射型纳米结构的半透射半反射膜层。Mini-LED背光源包括阵列设置的Mini-LED芯片和覆盖Mini-LED芯片的封装层，反射型纳米结构包括光偶进单元和光偶出单元，光偶进单元与Mini-LED芯片出光面的中心位置对位设置，光偶出单元位于Mini-LED芯片的两侧；Mini-LED背光源还包括与Mini-LED芯片同层设置的反射块，且反射块位于相邻Mini-LED芯片之间。本发明利用光波导层解决LED芯片的发光存在中心灯口较周边区域亮度差的问题，以此提高背光模组出光品质，还利用反射块提高背光模组的出光效率。\n\n附图说明\n\n[0018]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1和2为现有技术中背光模组的膜层结构示意图。\n\n[0020]图3为本发明提供一种背光模组的膜层的一种结构示意图。\n\n[0021]图4为本发明提供一种背光模组中的光波导层的结构示意图。\n\n[0022]图5为本发明提供一种背光模组的膜层的另一种结构示意图。\n\n具体实施方式\n\n[0023]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示，图中虚线表示在结构中并不存在的，仅仅说明结构的形状和位置。\n\n[0024]如图1所示，现有技术中的背光模组10，背光模组10包括驱动电路层11、阵列设于驱动电路层11表面的Mini-LED芯片12、以及覆盖Mini-LED芯片12表面的封装层13，由于Mini-LED芯片12中心面出光强度S1高于侧面出光强度S2和侧面出光强度S3，导致整个背光模组10的出光强度大小呈现波浪线S4形，导致Mini-LED芯片12与Mini-LED芯片12之间的光强分布也不一致，导致Mini-LED背光发出的光并不均匀。如图2所示，为了解决Mini-LED背光混光不均的问题，通常会在Mini-LED芯片12上方增加扩散板和分光膜片14，由于Mini-LED芯片出射的光需要一定的光程才能确保混光均匀，通常扩散板和分光膜片14的厚度在0.4mm左右，加上增亮膜片、保护膜片和背光源的厚度，Mini-LED显示模组的厚度会在2mm以上，与传统的LCD背光显示模组相比在厚度上无优势，因此对于轻便显示器的开发并无明显优势。\n\n[0025]本发明针对上述技术缺陷，本发明实施例提供一种背光模组，该背光模组包括背板、位于背板上的Mini-LED背光源、以及位于Mini-LED背光源上的光波导层，光波导层包括反射型纳米结构和覆盖反射型纳米结构的半透射半反射膜层。Mini-LED背光源包括阵列设置的Mini-LED芯片和覆盖Mini-LED芯片的封装层，反射型纳米结构包括光偶进单元和光偶出单元，光偶进单元与Mini-LED芯片出光面的中心位置对位设置，光偶出单元位于Mini-LED芯片的两侧。光偶进单元和光偶出单元的形状均为线栅、棱镜或微透镜中一种或一种以上组合结构，光偶进单元和光偶出单元的折射率均大于或等于1.7。光偶出单元、光偶进单元、光偶出单元和半透射半反射层的材料均包括铌酸锂，磷化铟(InP)、磷化砷铟镓(InGaAsP)、二氧化硅(SiO2)和硅中一种材料或一种以上材料。本发明的Mini-LED背光源还包括与Mini-LED芯片同层设置的反射块，且反射块位于相邻Mini-LED芯片之间。以上技术方案采用光波导技术进行混光，同时考虑到光波导结构会引起较大程度的光效损失，在Mini-LED芯片同层结构上进行优化，设置反射块，尽可能增加其出光效率，因此本发明的背光模组可解决现有的技术中LED芯片的发光存在中心灯口较周边区域亮度差的问题和现有的技术中的背光模组的厚度较薄的问题。\n\n[0026]详细地，如图3所示，本发明实施例提供一种背光模组100的膜层的一种结构示意图。本发明的背光模组100包括背板101、位于背板101上的Mini-LED背光源102、以及位于Mini-LED背光源102上的光波导层103，Mini-LED背光源102包括阵列设置的Mini-LED芯片1021和覆盖Mini-LED芯片1021的封装层1022，封装层1022优选为透明的光学胶或玻璃胶，封装层1022还可以采用有机层和无机层叠加膜层。光波导层103包括阵列设置的子波导层1031、子波导层1032、子波导层1033和子波导层1034，子波导层1031、子波导层1032、子波导层1033和子波导层1034下方均设置一个Mini-LED芯片1021。光波导层103的材料均包括铌酸锂，磷化铟(InP)、磷化砷铟镓(InGaAsP)、二氧化硅(SiO2)和硅中一种材料或一种以上材料。本实施例的光波导层的厚度为0.01um至2um，远远小于扩散板或者分光膜片的0.4mm厚度。从图2可以看出，本发明的背光模组100中的Mini-LED芯片1021中心灯口出射光线强度S5和周边区域的光线强度S6和S7差别较小，在出光面上形成光线强度S8均匀的显示效果。\n\n[0027]本实施例增加光波导层设计有微纳结构，可以将LED芯片灯口的光削弱，同时增加LED芯片边缘位置的光强，LED芯片与LED芯片之间的光强则是通过光波导的设计让两颗芯片之间的光进行叠加，从而实现LED间隔区域与中心位置光源的一致性，光波导设计促进混光均匀。相较传统用扩散板和分光膜片进行混光的方式，用光波导微纳结构进行混光可以极大程度的降低背光模组厚度。对于显示器件的轻薄化意义重大。\n\n[0028]现有技术光波导层中的铌酸锂波导是通过在铌酸锂晶体上扩散Ti离子形成波导，波导结构为扩散型，InP波导以InP为称底和下包层，以InGaAsP为芯层，以InP或者InP/空气为上包层，波导结构为掩埋脊形或者脊形，二氧化硅波导以硅片为衬底，以不同掺杂的SiO2材料为芯层和包层，波导结构为掩埋矩形。SOI波导是在SOI基片上制作，称底、下包层、芯层和上包层材料分别为Si、SiO2、Si和空气，波导结构为脊形。聚合物波导以硅片为称底，以不同掺杂浓度的聚合物材料为芯层，波导结构为掩埋矩形。玻璃波导是通过在玻璃材料上扩散Ag离子形成波导，波导结构为扩散型。\n\n[0029]本发明对现有的光波导层进行改进，反射型纳米结构和覆盖反射型纳米结构的半透射半反射膜层叠层结构形成光波导层。本实施例以子波导层1031为例进行说明本发明的发明点，其他子波导层的结构跟子波导层1031的结构类似，此处不再赘述。\n\n[0030]图4结合图3，子波导层1031包括反射型纳米结构和覆盖反射型纳米结构的半透射半反射膜层1035。反射型纳米结构包括光偶进单元和光偶出单元。每颗LED芯片上方都有光偶进单元和光偶出单元。每两个光偶出单元匹配一个光偶进单元。光偶进单元和光偶出单元内部都由特殊设计的微纳结构组成。根据下方的LED芯片颗粒数量和光偶单元数量不同，光偶进单元和光偶出单元的微结构以及偶进单元和偶出单元之间的间距都会有差异。其中微结构由高折射率的材料通过光刻工艺或者纳米压印工艺制备，制备这种微纳结构的材料的折射率要求在1.7以上，微纳结构的形状可以是线栅，棱镜，或者微透镜等形状。\n\n[0031]例如本实施例中的反射型纳米结构包括光偶进单元10311、光偶出单元10312和光偶出单元10313，光偶进单元10311与Mini-LED芯片1021出光面的中心位置对位设置，光偶出单元10312和光偶出单元10313位于Mini-LED芯片1021的两侧。光偶进单元10311、光偶出单元10312和光偶出单元10313的形状均为线栅、棱镜或微透镜中一种或一种以上组合结构，光偶进单元10311、光偶出单元10312和光偶出单元10313的折射率均大于或等于1.7。光偶进单元10311、光偶出单元10312、光偶出单元10313和半透射半反射层1035的材料均包括铌酸锂，磷化铟(InP)、磷化砷铟镓(InGaAsP)、二氧化硅(SiO2)和硅中一种材料或一种以上材料。光偶进单元和光偶出单元均采用光刻工艺或者纳米压印工艺制备而成，相邻的光偶出单元和光偶进单元之间的间距为2um至5um。\n\n[0032]在图4中，在每个反射型纳米结构中，两个光偶出单元匹配一个光偶进单元，且两个光偶出单元位于一个光偶进单元的两侧，例如光偶出单元10312和光偶出单元10313位于光偶进单元10311两侧。图3中的箭头表示光线的传播方向，Mini-LED芯片1021出射光线S11，经过光偶进单元10311，再次出射光线S12，到达半透射半反射层1035顶面后，同时产生出射光线S13和反射光线S14，反射光线S14在半透射半反射层1035的底面和光偶出单元的反射作用下再次从半透射半反射层1035顶面出射，例如光偶出单元10312出射的光线S15，其他的出射路径不再图中一一例举。\n\n[0033]从图3和图4中的背光模组100出光情况，可知本发明的光波导层103表面出射的正面光线强度S5、侧面出光强度S6和侧面出光强度S7差别在预设范围内，整体出光强度S8均匀，提升显示面板的显示品质，利用光波导技术设计制作特殊的微纳结构取代扩散板和分光膜片，无需额外的光学膜层，减小背光模组厚度。\n\n[0034]在用光波导的设计进行混光时，由于光线需要在光波导结构中多次传递，不可避免的会造成部分能量损失，为了增加光的利用率，提升整体光强度。为了避免部分反射光线从背板101处泄露，如图5所示，本发明还在Mini-LED背光源102还包括与Mini-LED芯片1021同层设置的反射块1023，且反射块1023位于相邻Mini-LED芯片1021之间。Mini-LED背光源102靠近背板101一侧形成有具有反射面的凹槽，凹槽内填充有金属银、钼、镁、铝中一种或一种以上金属材料，形成反射块1023，反射块1023的反射功能层膜厚100nm～500nm，相邻的两个反射块1023的间距为80nm～300nm。反射块1023结构形状可以是棱镜状，线栅状等形状，反射块1023要求反射率&gt;90％。\n\n[0035]本实施例的反射块1023的截面形状优选为等腰三角形，且等腰三角形的顶角垂直插入封装层1022的内部，等腰三角形的底边贴合于背板表面，当光线入射到该等腰三角形的两腰上时，会发生全反射，将光线导出封装层1022。从图5中的背光模组100出光情况，本发明在图3中的背光模组的基础上再次利用纳米压印技术在Mini-LED背光源102底部制作一层拥有反射功能的微纳结构，增加Mini-LED光源利用率。\n\n[0036]本发明的背光模组包括背板、阵列设置于背板上的Mini-LED背光源、以及位于Mini-LED背光源上的光波导层，光波导层具有反射型纳米结构；光波导层的厚度为0.01um至1um，利用光波导技术设计制作特殊的微纳结构取代扩散板和分光膜片，可以大大降低背光模组的厚度。本发明还利用纳米压印技术在LED底部制作一层拥有反射功能的微纳结构，增加Mini-LED光源利用率。\n\n[0037]综上，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本发明涉及显示技术领域，特别涉及一种背光模组。\n\n背景技术\n\n[0002]液晶面板(LCD)的背光源在技术和市场的不断发展中更新换代，从最初的冷阴极荧光灯管背光(CCFL)到贴片式背光(SMD LED)、量子点背光，再到如今的Mini-LED背光。背光技术的不断发展使得LCD的显示效果得到不断提升，让人们得以享受超高清的视觉盛宴。相较于传统的背光源技术，Mini-LED背光拥有更多优势，适合高端液晶显示器的解决方案。\n\n[0003]其主要优势如下：①可以直接采用R/G/B三色的LED模组，实现R/G/B三原色无缺失的显示效果，且可覆盖100％BT2020的宽色域，色彩的鲜艳度媲美OLED。②Mini LED可以实现高亮度大于1000nit下散热均匀，这是传统分立LED器件方案无法做到的。③Mini LED背光可以做到直下式超薄的LCD显示，这在轻薄的便携式消费电子中应用广阔，例如AR/VR眼镜、手机、笔记本电脑等。④Mini LED结合精细的局部背光调节(Local Dimming)，可以实现超高对比度(1000000:1)，让黑的更深邃，亮的更明亮。\n\n[0004]Mini-LED背光由LED芯片构成，本身LED芯片的发光存在中心灯口较周边区域亮的问题，同时LED芯片与LED芯片之间的光与LED芯片上的光强分布也不一致，导致Mini-LED背光发出的光并不均匀。为了解决Mini-LED背光混光不均的问题，通常会在Mini-LED上增加扩散板或者分光膜片。由于Mini-LED需要一定的光程才能确保混光均匀，通常扩散板和分光膜片的厚度在0.4mm左右，加上增亮膜片、保护膜片和背光源的厚度，Mini-LED显示模组的厚度会在2mm以上，与传统的LCD背光显示模组相比在厚度上无优势，因此对于轻便显示器的开发并无明显优势，需要改进。\n\n发明内容\n\n[0005]本申请依据现有技术问题，提供一种能够解决LED芯片的发光存在中心灯口较周边区域亮的问题的背光模组，且该背光模组的厚度较薄。\n\n[0006]本发明提供的技术方案如下：\n\n[0007]本发明实施例提供一种背光模组，该背光模组包括背板、位于所述背板上的Mini-LED背光源、以及位于所述Mini-LED背光源上的光波导层，所述光波导层包括反射型纳米结构和覆盖所述反射型纳米结构的半透射半反射膜层。\n\n[0008]根据本发明一优选实施例，所述Mini-LED背光源包括阵列设置的Mini-LED芯片和覆盖所述Mini-LED芯片的封装层，所述反射型纳米结构包括光偶进单元和光偶出单元，所述光偶进单元与所述Mini-LED芯片出光面的中心位置对位设置，所述光偶出单元位于所述Mini-LED芯片的两侧。\n\n[0009]根据本发明一优选实施例，所述光偶进单元和所述光偶出单元的形状均为线栅、棱镜或微透镜中一种或一种以上组合结构，所述光偶进单元和所述光偶出单元的折射率均大于或等于1.7。\n\n[0010]根据本发明一优选实施例，所述光偶出单元、所述光偶进单元、所述光偶出单元和所述半透射半反射层的材料均包括铌酸锂，磷化铟(InP)、磷化砷铟镓(InGaAsP)、二氧化硅(SiO2)和硅中一种材料或一种以上材料。\n\n[0011]根据本发明一优选实施例，在每个所述反射型纳米结构中，两个所述光偶出单元匹配一个所述光偶进单元，且两个所述光偶出单元位于一个所述光偶进单元的两侧。\n\n[0012]根据本发明一优选实施例，所述光偶进单元和所述光偶出单元均采用光刻工艺或者纳米压印工艺制备而成，相邻的所述光偶出单元和所述光偶进单元之间的间距为2um至5um。\n\n[0013]根据本发明一优选实施例，所述光波导层的厚度为0.01um至2um。\n\n[0014]根据本发明一优选实施例，所述Mini-LED背光源还包括与所述Mini-LED芯片同层设置的反射块，且所述反射块位于所述相邻所述Mini-LED芯片之间。\n\n[0015]根据本发明一优选实施例，所述Mini-LED背光源靠近所述背板一侧形成有具有反射面的凹槽，所述凹槽内填充有金属银、钼、镁、铝中一种或一种以上金属材料，形成所述反射块。\n\n[0016]根据本发明一优选实施例，所述反射块的截面形状为等腰三角形，且所述等腰三角形的顶角垂直插入所述封装层的内部，所述等腰三角形的底边贴合于所述背板表面，当光线入射到该等腰三角形的两腰上时，会发生全反射，将光线导出所述封装层。\n\n[0017]本发明的有益效果：本发明实施例提供一种背光模组，该背光模组包括背板、位于背板上的Mini-LED背光源、以及位于Mini-LED背光源上的光波导层，光波导层包括反射型纳米结构和覆盖反射型纳米结构的半透射半反射膜层。Mini-LED背光源包括阵列设置的Mini-LED芯片和覆盖Mini-LED芯片的封装层，反射型纳米结构包括光偶进单元和光偶出单元，光偶进单元与Mini-LED芯片出光面的中心位置对位设置，光偶出单元位于Mini-LED芯片的两侧；Mini-LED背光源还包括与Mini-LED芯片同层设置的反射块，且反射块位于相邻Mini-LED芯片之间。本发明利用光波导层解决LED芯片的发光存在中心灯口较周边区域亮度差的问题，以此提高背光模组出光品质，还利用反射块提高背光模组的出光效率。\n\n附图说明\n\n[0018]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0019]图1和2为现有技术中背光模组的膜层结构示意图。\n\n[0020]图3为本发明提供一种背光模组的膜层的一种结构示意图。\n\n[0021]图4为本发明提供一种背光模组中的光波导层的结构示意图。\n\n[0022]图5为本发明提供一种背光模组的膜层的另一种结构示意图。\n\n具体实施方式\n\n[0023]以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示，图中虚线表示在结构中并不存在的，仅仅说明结构的形状和位置。\n\n[0024]如图1所示，现有技术中的背光模组10，背光模组10包括驱动电路层11、阵列设于驱动电路层11表面的Mini-LED芯片12、以及覆盖Mini-LED芯片12表面的封装层13，由于Mini-LED芯片12中心面出光强度S1高于侧面出光强度S2和侧面出光强度S3，导致整个背光模组10的出光强度大小呈现波浪线S4形，导致Mini-LED芯片12与Mini-LED芯片12之间的光强分布也不一致，导致Mini-LED背光发出的光并不均匀。如图2所示，为了解决Mini-LED背光混光不均的问题，通常会在Mini-LED芯片12上方增加扩散板和分光膜片14，由于Mini-LED芯片出射的光需要一定的光程才能确保混光均匀，通常扩散板和分光膜片14的厚度在0.4mm左右，加上增亮膜片、保护膜片和背光源的厚度，Mini-LED显示模组的厚度会在2mm以上，与传统的LCD背光显示模组相比在厚度上无优势，因此对于轻便显示器的开发并无明显优势。\n\n[0025]本发明针对上述技术缺陷，本发明实施例提供一种背光模组，该背光模组包括背板、位于背板上的Mini-LED背光源、以及位于Mini-LED背光源上的光波导层，光波导层包括反射型纳米结构和覆盖反射型纳米结构的半透射半反射膜层。Mini-LED背光源包括阵列设置的Mini-LED芯片和覆盖Mini-LED芯片的封装层，反射型纳米结构包括光偶进单元和光偶出单元，光偶进单元与Mini-LED芯片出光面的中心位置对位设置，光偶出单元位于Mini-LED芯片的两侧。光偶进单元和光偶出单元的形状均为线栅、棱镜或微透镜中一种或一种以上组合结构，光偶进单元和光偶出单元的折射率均大于或等于1.7。光偶出单元、光偶进单元、光偶出单元和半透射半反射层的材料均包括铌酸锂，磷化铟(InP)、磷化砷铟镓(InGaAsP)、二氧化硅(SiO2)和硅中一种材料或一种以上材料。本发明的Mini-LED背光源还包括与Mini-LED芯片同层设置的反射块，且反射块位于相邻Mini-LED芯片之间。以上技术方案采用光波导技术进行混光，同时考虑到光波导结构会引起较大程度的光效损失，在Mini-LED芯片同层结构上进行优化，设置反射块，尽可能增加其出光效率，因此本发明的背光模组可解决现有的技术中LED芯片的发光存在中心灯口较周边区域亮度差的问题和现有的技术中的背光模组的厚度较薄的问题。\n\n[0026]详细地，如图3所示，本发明实施例提供一种背光模组100的膜层的一种结构示意图。本发明的背光模组100包括背板101、位于背板101上的Mini-LED背光源102、以及位于Mini-LED背光源102上的光波导层103，Mini-LED背光源102包括阵列设置的Mini-LED芯片1021和覆盖Mini-LED芯片1021的封装层1022，封装层1022优选为透明的光学胶或玻璃胶，封装层1022还可以采用有机层和无机层叠加膜层。光波导层103包括阵列设置的子波导层1031、子波导层1032、子波导层1033和子波导层1034，子波导层1031、子波导层1032、子波导层1033和子波导层1034下方均设置一个Mini-LED芯片1021。光波导层103的材料均包括铌酸锂，磷化铟(InP)、磷化砷铟镓(InGaAsP)、二氧化硅(SiO2)和硅中一种材料或一种以上材料。本实施例的光波导层的厚度为0.01um至2um，远远小于扩散板或者分光膜片的0.4mm厚度。从图2可以看出，本发明的背光模组100中的Mini-LED芯片1021中心灯口出射光线强度S5和周边区域的光线强度S6和S7差别较小，在出光面上形成光线强度S8均匀的显示效果。\n\n[0027]本实施例增加光波导层设计有微纳结构，可以将LED芯片灯口的光削弱，同时增加LED芯片边缘位置的光强，LED芯片与LED芯片之间的光强则是通过光波导的设计让两颗芯片之间的光进行叠加，从而实现LED间隔区域与中心位置光源的一致性，光波导设计促进混光均匀。相较传统用扩散板和分光膜片进行混光的方式，用光波导微纳结构进行混光可以极大程度的降低背光模组厚度。对于显示器件的轻薄化意义重大。\n\n[0028]现有技术光波导层中的铌酸锂波导是通过在铌酸锂晶体上扩散Ti离子形成波导，波导结构为扩散型，InP波导以InP为称底和下包层，以InGaAsP为芯层，以InP或者InP/空气为上包层，波导结构为掩埋脊形或者脊形，二氧化硅波导以硅片为衬底，以不同掺杂的SiO2材料为芯层和包层，波导结构为掩埋矩形。SOI波导是在SOI基片上制作，称底、下包层、芯层和上包层材料分别为Si、SiO2、Si和空气，波导结构为脊形。聚合物波导以硅片为称底，以不同掺杂浓度的聚合物材料为芯层，波导结构为掩埋矩形。玻璃波导是通过在玻璃材料上扩散Ag离子形成波导，波导结构为扩散型。\n\n[0029]本发明对现有的光波导层进行改进，反射型纳米结构和覆盖反射型纳米结构的半透射半反射膜层叠层结构形成光波导层。本实施例以子波导层1031为例进行说明本发明的发明点，其他子波导层的结构跟子波导层1031的结构类似，此处不再赘述。\n\n[0030]图4结合图3，子波导层1031包括反射型纳米结构和覆盖反射型纳米结构的半透射半反射膜层1035。反射型纳米结构包括光偶进单元和光偶出单元。每颗LED芯片上方都有光偶进单元和光偶出单元。每两个光偶出单元匹配一个光偶进单元。光偶进单元和光偶出单元内部都由特殊设计的微纳结构组成。根据下方的LED芯片颗粒数量和光偶单元数量不同，光偶进单元和光偶出单元的微结构以及偶进单元和偶出单元之间的间距都会有差异。其中微结构由高折射率的材料通过光刻工艺或者纳米压印工艺制备，制备这种微纳结构的材料的折射率要求在1.7以上，微纳结构的形状可以是线栅，棱镜，或者微透镜等形状。\n\n[0031]例如本实施例中的反射型纳米结构包括光偶进单元10311、光偶出单元10312和光偶出单元10313，光偶进单元10311与Mini-LED芯片1021出光面的中心位置对位设置，光偶出单元10312和光偶出单元10313位于Mini-LED芯片1021的两侧。光偶进单元10311、光偶出单元10312和光偶出单元10313的形状均为线栅、棱镜或微透镜中一种或一种以上组合结构，光偶进单元10311、光偶出单元10312和光偶出单元10313的折射率均大于或等于1.7。光偶进单元10311、光偶出单元10312、光偶出单元10313和半透射半反射层1035的材料均包括铌酸锂，磷化铟(InP)、磷化砷铟镓(InGaAsP)、二氧化硅(SiO2)和硅中一种材料或一种以上材料。光偶进单元和光偶出单元均采用光刻工艺或者纳米压印工艺制备而成，相邻的光偶出单元和光偶进单元之间的间距为2um至5um。\n\n[0032]在图4中，在每个反射型纳米结构中，两个光偶出单元匹配一个光偶进单元，且两个光偶出单元位于一个光偶进单元的两侧，例如光偶出单元10312和光偶出单元10313位于光偶进单元10311两侧。图3中的箭头表示光线的传播方向，Mini-LED芯片1021出射光线S11，经过光偶进单元10311，再次出射光线S12，到达半透射半反射层1035顶面后，同时产生出射光线S13和反射光线S14，反射光线S14在半透射半反射层1035的底面和光偶出单元的反射作用下再次从半透射半反射层1035顶面出射，例如光偶出单元10312出射的光线S15，其他的出射路径不再图中一一例举。\n\n[0033]从图3和图4中的背光模组100出光情况，可知本发明的光波导层103表面出射的正面光线强度S5、侧面出光强度S6和侧面出光强度S7差别在预设范围内，整体出光强度S8均匀，提升显示面板的显示品质，利用光波导技术设计制作特殊的微纳结构取代扩散板和分光膜片，无需额外的光学膜层，减小背光模组厚度。\n\n[0034]在用光波导的设计进行混光时，由于光线需要在光波导结构中多次传递，不可避免的会造成部分能量损失，为了增加光的利用率，提升整体光强度。为了避免部分反射光线从背板101处泄露，如图5所示，本发明还在Mini-LED背光源102还包括与Mini-LED芯片1021同层设置的反射块1023，且反射块1023位于相邻Mini-LED芯片1021之间。Mini-LED背光源102靠近背板101一侧形成有具有反射面的凹槽，凹槽内填充有金属银、钼、镁、铝中一种或一种以上金属材料，形成反射块1023，反射块1023的反射功能层膜厚100nm～500nm，相邻的两个反射块1023的间距为80nm～300nm。反射块1023结构形状可以是棱镜状，线栅状等形状，反射块1023要求反射率&gt;90％。\n\n[0035]本实施例的反射块1023的截面形状优选为等腰三角形，且等腰三角形的顶角垂直插入封装层1022的内部，等腰三角形的底边贴合于背板表面，当光线入射到该等腰三角形的两腰上时，会发生全反射，将光线导出封装层1022。从图5中的背光模组100出光情况，本发明在图3中的背光模组的基础上再次利用纳米压印技术在Mini-LED背光源102底部制作一层拥有反射功能的微纳结构，增加Mini-LED光源利用率。\n\n[0036]本发明的背光模组包括背板、阵列设置于背板上的Mini-LED背光源、以及位于Mini-LED背光源上的光波导层，光波导层具有反射型纳米结构；光波导层的厚度为0.01um至1um，利用光波导技术设计制作特殊的微纳结构取代扩散板和分光膜片，可以大大降低背光模组的厚度。本发明还利用纳米压印技术在LED底部制作一层拥有反射功能的微纳结构，增加Mini-LED光源利用率。\n\n[0037]综上，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10994, 24048, '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种视频画面亮度调节方法、装置、显示装置及存储介质。\n\n背景技术\n\n[0002]Local Dimming(局部调光)算法实现原理是通过控制背光不同区域的LED灯的亮暗，实现对背光的控制，使显示画面亮的区域更亮，暗的区域更暗，增强显示画面的对比度，提高画质。\n\n[0003]但是，目前Rtings实时动态场景中的白框在8K MiniLED裸机上的亮度达不到目标值，直接调整现有背光Gamma能够提升高灰段亮度，因受制于功率限制，此处高灰段亮度被较大提升，势必需要将低灰段亮度大幅压低以使功率不超标，因此存在整体偏暗的场景会更暗，此时会有影响画质的风险。\n\n发明内容\n\n[0004]本申请实施例提供一种视频画面亮度调节方法、装置、显示装置及存储介质，能够使得Rtings实时动态场景中的白框在8K Mini-LED裸机上的亮度达到目标值，并符合功率限制条件，并保证画质品味。\n\n[0005]本申请实施例提供一种视频画面亮度调节方法，包括：\n\n[0006]获取显示屏待侦测的输入图像；\n\n[0007]将所述输入图像划分为预设数量的分区单元；\n\n[0008]根据所述分区单元和预设侦测分区包含的分区单元数量，得到若干多合一的侦测分区；\n\n[0009]获取各所述侦测分区的分区灰阶值；\n\n[0010]根据所述分区灰阶值对所述显示屏亮度进行调节。\n\n[0011]在一些实施例中，所述将所述输入图像划分为预设数量的分区单元，包括：\n\n[0012]获取预设的目标分区单元包含的像素数量；\n\n[0013]根据所述像素数量和所述输入图像的尺寸，将所述输入图像划分为预设数量的分区单元。\n\n[0014]在一些实施例中，所述分区单元数量包括第一分区单元数量和第二分区单元数量，所述根据所述分区单元和预设侦测分区包含的分区单元数量，得到若干多合一的侦测分区，包括：\n\n[0015]根据所述第一分区单元数量和预设的第一白框长宽比值，得到多合一的第一侦测分区；\n\n[0016]根据所述第二分区单元数量和预设的第二白框长宽比值，得到多合一的第二侦测分区。\n\n[0017]在一些实施例中，所述根据所述分区灰阶值对所述显示屏亮度进行调节，包括：\n\n[0018]根据分区灰阶值判断所述输入图像是否包含白框区域；\n\n[0019]若所述输入图像中包含白框区域，则切换背光伽玛曲线为预设伽玛曲线对所述显示屏亮度进行调节；\n\n[0020]若所述输入图像中不包含白框区域，则维持当前的背光伽玛曲线对所述显示屏亮度进行调节。\n\n[0021]在一些实施例中，所述根据所述分区灰阶值对所述显示屏亮度进行调节，包括：\n\n[0022]当所述第一侦测分区中目标第一侦测分区的分区灰阶值大于等于第一灰阶阈值，且所述目标第一侦测分区的分区灰阶值大于等于与所述目标第一侦测分区相邻的第一侦测分区的分区灰阶值时，确定所述输入图像包含第一类白框区域；\n\n[0023]当所述第二侦测分区中目标第二侦测分区的分区灰阶值大于等于第二灰阶阈值，且所述目标第二侦测分区的分区灰阶值大于等于与所述目标第二侦测分区相邻的第二侦测分区的分区灰阶值时，确定所述输入图像包含第二类白框区域；\n\n[0024]若所述输入图像同时包含所述第一类白框区域和所述第二类白框区域，则对所述显示屏亮度进行调节。\n\n[0025]在一些实施例中，所述根据所述分区灰阶值对所述显示屏亮度进行调节之前，包括：\n\n[0026]获取所述第一侦测分区包含的第一像素总数和所述第二侦测分区包含的第二像素总数；\n\n[0027]根据所述第一像素总数和预设的白框灰阶值，确定所述第一灰阶阈值；\n\n[0028]根据所述第二像素总数和预设的白框灰阶值，确定所述第二灰阶阈值。\n\n[0029]在一些实施例中，所述若所述输入图像同时包含所述第一类白框区域和所述第二类白框区域，则对所述显示屏亮度进行调节，包括：\n\n[0030]若所述输入图像同时包含所述第一类白框区域和所述第二类白框区域，则切换背光伽玛曲线为预设伽玛曲线；\n\n[0031]根据所述预设伽玛曲线，提高所述显示屏中所述第一类白框区域和所述第二类白框区域的亮度，降低所述显示屏中其它区域的亮度。\n\n[0032]本申请实施例提供一种视频画面亮度调节装置，包括：\n\n[0033]图像获取模块，用于获取显示屏待侦测的输入图像；\n\n[0034]单元划分模块，与所述图像获取模块通讯连接，用于将所述输入图像划分为预设数量的分区单元；\n\n[0035]分区划分模块，与所述单元划分模块通讯连接，用于根据所述分区单元和预设侦测分区包含的分区单元数量，得到多合一的侦测分区；\n\n[0036]数据获取模块，与所述分区划分模块通讯连接，用于获取各所述侦测分区的分区灰阶值；\n\n[0037]亮度调节模块，与所述数据获取模块通讯连接，用于根据所述分区灰阶值对所述显示屏亮度进行调节。\n\n[0038]在一些实施例中，单元划分模块还用于获取预设的目标分区单元包含的像素数量；根据所述像素数量和所述输入图像的尺寸，将所述输入图像划分为预设数量的分区单元。\n\n[0039]在一些实施例中，分区划分模块还用于根据所述第一分区单元数量和预设的第一白框长宽比值，得到多合一的第一侦测分区，所述分区单元数量包括第一分区单元数量和第二分区单元数量；根据所述第二分区单元数量和预设的第二白框长宽比值，得到多合一的第二侦测分区。\n\n[0040]在一些实施例中，亮度调节模块还用于根据分区灰阶值判断所述输入图像是否包含白框区域；若所述输入图像中包含白框区域，则切换背光伽玛曲线为预设伽玛曲线对所述显示屏亮度进行调节；若所述输入图像中不包含白框区域，则维持当前的背光伽玛曲线对所述显示屏亮度进行调节。\n\n[0041]在一些实施例中，亮度调节模块还用于当所述第一侦测分区中目标第一侦测分区的分区灰阶值大于等于第一灰阶阈值，且所述目标第一侦测分区的分区灰阶值大于等于与所述目标第一侦测分区相邻的第一侦测分区的分区灰阶值时，确定所述输入图像包含第一类白框区域；当所述第二侦测分区中目标第二侦测分区的分区灰阶值大于等于第二灰阶阈值，且所述目标第二侦测分区的分区灰阶值大于等于与所述目标第二侦测分区相邻的第二侦测分区的分区灰阶值时，确定所述输入图像包含第二类白框区域；若所述输入图像同时包含所述第一类白框区域和所述第二类白框区域，则对所述显示屏亮度进行调节。\n\n[0042]在一些实施例中，亮度调节模块还用于获取所述第一侦测分区包含的第一像素总数和所述第二侦测分区包含的第二像素总数；根据所述第一像素总数和预设的白框灰阶值，确定所述第一灰阶阈值；根据所述第二像素总数和预设的白框灰阶值，确定所述第二灰阶阈值。\n\n[0043]在一些实施例中，亮度调节模块还用于若所述输入图像同时包含所述第一类白框区域和所述第二类白框区域，则切换背光伽玛曲线为预设伽玛曲线；根据所述预设伽玛曲线，提高所述显示屏中所述第一类白框区域和所述第二类白框区域的亮度，降低所述显示屏中其它区域的亮度。\n\n[0044]本申请实施例提供一种显示装置，所述显示装置包括控制器和存储器，所述控制器用于执行存储于所述存储器的若干指令，以实现任一项所述的方法。\n\n[0045]本申请实施例提供一种存储介质，所述存储介质中存储若干指令，所述指令用于供控制器执行以实现任一项所述的方法。\n\n[0046]本申请实施例提供的视频画面亮度调节方法、装置、显示装置及存储介质，通过对输入图像进行分区得到分区单元，然后得到多合一的侦测分区，通过各个侦测分区的分区灰阶值确定白框区域，基于白框区域进行亮度调节，使得Rtings实时动态场景中的白框在8K Mini-LED裸机上的亮度达到目标值。\n\n附图说明\n\n[0047]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0048]图1为本申请一实施例中视频画面亮度调节方法的流程示意图。\n\n[0049]图2为本申请另一实施例中视频画面亮度调节方法的流程示意图。\n\n[0050]图3为本申请另一实施例中视频画面亮度调节方法的流程示意图。\n\n[0051]图4为本申请另一实施例中视频画面亮度调节方法的流程示意图。\n\n[0052]图5为本申请另一实施例中视频画面亮度调节方法的流程示意图。\n\n[0053]图6为本申请另一实施例中视频画面亮度调节方法的流程示意图。\n\n[0054]图7为本申请另一实施例中视频画面亮度调节方法的流程示意图。\n\n[0055]图8为本申请实施例中视频画面亮度调节装置的结构示意图。\n\n具体实施方式\n\n[0056]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0057]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0058]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0059]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0060]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0061]请参阅图1，本申请实施例提供一种显示器亮度调节方法，该方法包括步骤S101～S105，具体如下：\n\n[0062]S101，获取显示屏待侦测的输入图像。\n\n[0063]具体地，输入图像用于对显示屏的显示效果进行侦测，然后基于侦测结果对显示屏的显示方式进行调整，输入图像的相关参数例如尺寸等需要基于显示屏的相关参数进行选取。其中，实时动态场景中对显示器进行侦测是通过视频进行侦测，因此可以选择对视频的每一帧图像进行侦测。\n\n[0064]S102，将所述输入图像划分为预设数量的分区单元。\n\n[0065]具体地，分区单元指输入图像划分的最小单元，分区单元的大小可以根据需要进行设置，因此对应的预设数量也可以进行调整，需要说明的是，需要通过分区单元将输入图像进行整分，且等分，也就是将输入图像分为m×n个分区单元，m和n都为正整数，如4k画面分54×96个分区单元。\n\n[0066]在一个实施例中，如图2所示，本步骤包括：S201，获取预设的目标分区单元包含的像素数量；S202，根据所述像素数量和所述输入图像的尺寸，将所述输入图像划分为预设数量的分区单元。\n\n[0067]具体地，由于划分的分区单元的数量取决于分区单元的大小，因此获取预设的目标分区单元包含的像素数量，目标分区单元为当前进行侦测时想要划分的分区单元，不同的目标分区单元包含的像素数量不同，可以根据侦测的精细化需求进行设置选取。\n\n[0068]其中，输入图像的尺寸在获取到输入图像时即同步获取到，此外，由于输入图像的尺寸与显示屏的尺寸相匹配，因此也可以根据显示屏的尺寸确定输入图像的尺寸。根据像素数量和输入图像的尺寸将输入图像划分为预设数量的分区单元，例如，输入图像的尺寸为4320*7680，目标分区单元包含的像素数量为80*80，则将输入图像划分54×96个分区单元。\n\n[0069]S103，根据所述分区单元和预设侦测分区包含的分区单元数量，得到若干多合一的侦测分区。\n\n[0070]其中，多合一指将多个分区单元合并为一个侦测分区，然后对侦测分区进行分析判断其是否为白框区域。此外，不同的侦测分区其大小不同，因此根据分区单元和预设侦测分区包含的分区单元数量得到若干多合一的侦测分区。\n\n[0071]在一个实施例中，如图3所示，本步骤包括：S301，所述分区单元数量包括第一分区单元数量和第二分区单元数量，根据所述第一分区单元数量和预设的第一白框长宽比值，得到多合一的第一侦测分区；S302，根据所述第二分区单元数量和预设的第二白框长宽比值，得到多合一的第二侦测分区。\n\n[0072]其中，不同的侦测分区其大小不同，分区单元数量包括第一分区单元数量和第二分区单元数量，第一分区单元数量为第一侦测分区内包含的分区单元的数量，第二分区单元数量为第二侦测分区内包含的分区单元的数量。此外，对于同一分区单元数量，其侦测分区的长宽比不同，对应的区域形状不同，例如，如果某一侦测分区包含88个分区单元，那么该侦测分区对应的尺寸为11*8或22-4也需要进一步确定。因此不同的侦测分区需要基于其包含的分区单元数量和对应的白框长宽比值进行确定，只需要确定任意的侦测分区不能超出输入图像的边界，白框长宽比值包括第一白框长宽比值和第二白框长宽比值。\n\n[0073]例如，对于基于Local Dimming的Rtings侦测方案，其包括小白框侦测和大白框侦测，小白框侦测过程中的侦测分区对应为第一侦测分区，大白框侦测过程中的侦测分区对应为第二侦测分区。输入图像的尺寸为4320*7680，目标分区单元包含的像素数量为80*80，则将输入图像划分54×96个分区单元。Rtings场景小白框大小为88个分区单元，第一白框长宽比值为11*8，将得到的54×96个分区单元从左上角水平11个分区单元竖直8个分区单元作为第1个第一侦测分区，从左到右，从上到下，每次移动步长为1个分区单元，依此进行88合1操作，得到P_88in1＝44×89个第一侦测分区，也就是说任意组合得到输入图像中所有的第一侦测分区，且第一侦测分区不可拆分。以此类推划分得到第二侦测分区。\n\n[0074]需要说明的是第一分区单元数量和第二分区单元数量可以自己与不同的白框大小进行自由设置，也就是上述举例中的小白框大小可以为88个分区单元，也可以是其它的量。例如，因Rtings画面为动态场景，大白框面积不是定值，有些帧为266个分区单元，有些帧为285个分区单元，则将得到的分区单元从左上角水平19个分区单元竖直14与15个分区单元作为第1个第二侦测分区，从左到右，从上到下，每次移动步长为1个分区单元，依此进行266合1与285合1操作，得到P_266in1＝36×83与P_285in1＝36×82个第二侦测分区。本实施例中至少要分别划分出第一侦测分区和第二侦测分区，如果为了进一步为了提高进度，可以选择按照上述方式划分第三侦测分区等。\n\n[0075]S104，获取各所述侦测分区的分区灰阶值。\n\n[0076]具体地，分别统计获取各侦测分区的分区灰阶值，侦测分区包括第一侦测分区和第二侦测分区。其中，为了减少统计量，避免在每个侦测分区都要逐一对各个像素点的灰阶值进行获取统计，在步骤S102将输入图像划分为预设数量的分区单元之后，可以对各个分区单元的灰阶值总和进行统计，之后对各侦测分区的分区灰阶值获取时可以直接基于各个分区单元的灰阶值总和进行计算。\n\n[0077]S105，根据所述分区灰阶值对所述显示屏亮度进行调节。\n\n[0078]具体地，根据分区灰阶值对显示屏亮度进行调节，使得Rtings实时动态场景中的白框在8K Mini-LED裸机上的亮度达到目标值，并符合功率限制条件，并保证画质效果。\n\n[0079]在一个实施例中，如图4所示，本步骤包括：S401，根据分区灰阶值判断所述输入图像是否包含白框区域；S402，若所述输入图像中包含白框区域，则切换背光伽玛曲线为预设伽玛曲线对所述显示屏亮度进行调节；S403，若所述输入图像中不包含白框区域，则维持当前的背光伽玛曲线对所述显示屏亮度进行调节。\n\n[0080]其中，白框区域为灰阶值为白光且灰阶值大于周围区域的侦测分区，因此根据分区灰阶值判断输入图像是否包含白框区域，也就是判断是否有侦测分区是白框区域。如果输入图像中不包含白框区域，说明当前的亮度显示效果较好，维持当前的背光伽玛曲线对显示屏亮度进行调节。如果输入图像中包含白框区域，直接根据现有背光Gamma曲线进行调整能够提升高灰段亮度，但存在整体偏暗的场景会更暗，因此切换背光伽玛曲线为预设伽玛曲线对显示屏亮度进行调节。\n\n[0081]需要说明的是，预设伽玛曲线可以是唯一的背光伽玛曲线，也就是所有判定存在白框区域的输入图像均调整为同一背光伽玛曲线进行亮度调节。但预设伽玛曲线也可以根据白框区域的灰阶总值进行确定，以选择更加合适的背光伽玛曲线进行亮度调节。\n\n[0082]在一个实施例中，如图5所示，本步骤包括：S501，当所述第一侦测分区中目标第一侦测分区的分区灰阶值大于等于第一灰阶阈值，且所述目标第一侦测分区的分区灰阶值大于等于与所述目标第一侦测分区相邻的第一侦测分区的分区灰阶值时，确定所述输入图像包含第一类白框区域；S502，当所述第二侦测分区中目标第二侦测分区的分区灰阶值大于等于第二灰阶阈值，且所述目标第二侦测分区的分区灰阶值大于等于与所述目标第二侦测分区相邻的第二侦测分区的分区灰阶值时，确定所述输入图像包含第二类白框区域；S503，若所述输入图像同时包含所述第一类白框区域和所述第二类白框区域，则对所述显示屏亮度进行调节。\n\n[0083]其中，判定侦测分区是否为白框区域需要满足两个条件，一是侦测分区本身的分区灰阶值超过阈值，二是侦测分区的分区灰阶值大于该侦测分区相邻的分区灰阶值。且由于侦测分区包含第一侦测分区和第二侦测分区，因此需要注意判断第一侦测分区是否存在目标第一侦测分区为第一类白框区域，第二侦测分区是否存在目标第二侦测分区为第二类白框区域。如果第一类白框区域和第二类白框区域同时存在，说明输入图像包含白框区域，则需要对显示屏亮度进行调节。\n\n[0084]例如，输入图像的尺寸为4320*7680，目标分区单元包含的像素数量为80*80，则将输入图像划分54×96个分区单元。Rtings场景小白框大小为88个分区单元，得到P_88in1＝44×89个第一侦测分区。因Rtings画面为动态场景，大白框面积不是定值，有些帧为266个分区单元，有些帧为285个分区单元，则依此进行266合1或285合1操作，得到P_266in1＝36×83与P_285in1＝36×82个第二侦测分区。小白框侦测：①依此判断P_88in1每个第一侦测分区的分区灰阶值是否大于第一灰阶阈值small_box_thre；②该第一侦测分区的分区灰阶值是否大于相邻四周第一侦测分区各自对应的分区灰阶值；若这两个条件判断结果均为“是”，则该画面有小白框。大白框侦测：①依此判断P_266in1或P_285in1每个第二侦测分区的分区灰阶值是否大于第二灰阶阈值big_box266_thre或big_box285_thre，二者判断结果为“或”逻辑关系；②该第二侦测分区的分区灰阶值是否大于相邻四周第二侦测分区各自对应的分区灰阶值；若这两个条件判断结果均为“是”，则该画面有大白框。当判断画面同时有小白框和大白框，则输入图像中包含白框区域，此帧输入图像为Rtings测试画面。若侦测到非Rtings画面时，维持现有背光Gamma曲线即可；若侦测Rtings场景画面，切换背光Gamma曲线，提高白框区域的亮度，降低画面暗区域亮度。\n\n[0085]在一个实施例中，如图6所示，本步骤之前包括：S601，获取所述第一侦测分区包含的第一像素总数和所述第二侦测分区包含的第二像素总数；S602，根据所述第一像素总数和预设的白框灰阶值，确定所述第一灰阶阈值；S603，根据所述第二像素总数和预设的白框灰阶值，确定所述第二灰阶阈值。\n\n[0086]具体地，由于侦测分区的大小可以根据不同的要求进行调节，不同大小的侦测分区对应不同的灰阶阈值。因此获取第一侦测分区包含的第一像素总数和第二侦测分区包含的第二像素总数。例如，输入图像的尺寸为4320*7680，目标分区单元包含的像素数量为80*80，则将输入图像划分54×96个分区单元。Rtings场景小白框大小为88个分区单元，得到P_88in1＝44×89个第一侦测分区，则一个第一侦测分区中包含的第一像素总数为80*80*88。由于灰阶阈值是用于判定侦测分区的分区灰阶值是否达到白框的标准，一般白框的灰阶值为确定数值例如255灰阶，因此根据第一像素总数和预设的白框灰阶值确定第一灰阶阈值，根据第二像素总数和预设的白框灰阶值确定第二灰阶阈值。\n\n[0087]在一个实施例中，如图7所示，步骤S503，若所述输入图像同时包含所述第一类白框区域和所述第二类白框区域，则对所述显示屏亮度进行调节包括：S701，若所述输入图像同时包含所述第一类白框区域和所述第二类白框区域，则切换背光伽玛曲线为预设伽玛曲线；S702，根据所述预设伽玛曲线，提高所述显示屏中所述第一类白框区域和所述第二类白框区域的亮度，降低所述显示屏中其它区域的亮度。\n\n[0088]具体地，如果第一类白框区域和第二类白框区域同时存在，说明输入图像包含白框区域，则需要对显示屏亮度进行调节，切换背光伽玛曲线为预设伽玛曲线。根据预设伽玛曲线提高显示屏中第一类白框区域和第二类白框区域的亮度，此处仅会提高白框亮度值，因此对功率影响较小，稍降低显示屏中其它区域亮度即可满足功率要求，符合功率限制条件并可达到白框亮度的目标值，不会影响画质。\n\n[0089]本实施例通过侦测Rtings实时动态场景，切换背光Gamma曲线，提高白框区域的亮度，降低画面暗区域亮度，符合功率限制条件并可达到白框亮度的目标值。\n\n[0090]为了更好实施本申请实施例中的视频画面亮度调节方法，在视频画面亮度调节方法基础之上，本申请实施例中还提供一种视频画面亮度调节装置，如图8所示，视频画面亮度调节装置100包括：\n\n[0091]图像获取模块110，用于获取显示屏待侦测的输入图像；\n\n[0092]单元划分模块120，与所述图像获取模块110通讯连接，用于将所述输入图像划分为预设数量的分区单元；\n\n[0093]分区划分模块130，与所述单元划分模块120通讯连接，用于根据所述分区单元和预设侦测分区包含的分区单元数量，得到多合一的侦测分区；\n\n[0094]数据获取模块140，与所述分区划分模块130通讯连接，用于获取各所述侦测分区的分区灰阶值；\n\n[0095]亮度调节模块150，与所述数据获取模块140通讯连接，用于根据所述分区灰阶值对所述显示屏亮度进行调节。\n\n[0096]在一些实施例中，单元划分模块120还用于获取预设的目标分区单元包含的像素数量；根据所述像素数量和所述输入图像的尺寸，将所述输入图像划分为预设数量的分区单元。\n\n[0097]在一些实施例中，分区划分模块130还用于根据所述第一分区单元数量和预设的第一白框长宽比值，得到多合一的第一侦测分区，所述分区单元数量包括第一分区单元数量和第二分区单元数量；根据所述第二分区单元数量和预设的第二白框长宽比值，得到多合一的第二侦测分区。\n\n[0098]在一些实施例中，亮度调节模块150还用于根据分区灰阶值判断所述输入图像是否包含白框区域；若所述输入图像中包含白框区域，则切换背光伽玛曲线为预设伽玛曲线对所述显示屏亮度进行调节；若所述输入图像中不包含白框区域，则维持当前的背光伽玛曲线对所述显示屏亮度进行调节。\n\n[0099]在一些实施例中，亮度调节模块150还用于当所述第一侦测分区中目标第一侦测分区的分区灰阶值大于等于第一灰阶阈值，且所述目标第一侦测分区的分区灰阶值大于等于与所述目标第一侦测分区相邻的第一侦测分区的分区灰阶值时，确定所述输入图像包含第一类白框区域；当所述第二侦测分区中目标第二侦测分区的分区灰阶值大于等于第二灰阶阈值，且所述目标第二侦测分区的分区灰阶值大于等于与所述目标第二侦测分区相邻的第二侦测分区的分区灰阶值时，确定所述输入图像包含第二类白框区域；若所述输入图像同时包含所述第一类白框区域和所述第二类白框区域，则对所述显示屏亮度进行调节。\n\n[0100]在一些实施例中，亮度调节模块150还用于获取所述第一侦测分区包含的第一像素总数和所述第二侦测分区包含的第二像素总数；根据所述第一像素总数和预设的白框灰阶值，确定所述第一灰阶阈值；根据所述第二像素总数和预设的白框灰阶值，确定所述第二灰阶阈值。\n\n[0101]在一些实施例中，亮度调节模块150还用于若所述输入图像同时包含所述第一类白框区域和所述第二类白框区域，则切换背光伽玛曲线为预设伽玛曲线；根据所述预设伽玛曲线，提高所述显示屏中所述第一类白框区域和所述第二类白框区域的亮度，降低所述显示屏中其它区域的亮度。\n\n[0102]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0103]本发明还提供了显示装置，所述显示装置包括存储器和控制器，所述控制器用于执行存储于所述存储器的若干指令，以实现如上文所述的视频画面亮度调节方法。\n\n[0104]在一实施例中，本发明提供存储介质，所述存储介质中存储若干指令，所述指令用于供控制器执行以实现如上文任一所述的视频画面亮度调节方法。需要说明的是，本领域普通技术人员可以理解上述实施例的各种方法中的全部或部分步骤是可以通过程序来指令相关的硬件来完成。其中，存储介质可以包括：只读存储器(ROM，Read Only Memory)、随机存取记忆体(RAM，Random Access Memory)、磁盘或光盘等。\n\n[0105]以上对本申请实施例所提供的一种视频画面亮度调节方法、装置、显示装置及存储介质进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，具体涉及一种视频画面亮度调节方法、装置、显示装置及存储介质。\n\n背景技术\n\n[0002]Local Dimming(局部调光)算法实现原理是通过控制背光不同区域的LED灯的亮暗，实现对背光的控制，使显示画面亮的区域更亮，暗的区域更暗，增强显示画面的对比度，提高画质。\n\n[0003]但是，目前Rtings实时动态场景中的白框在8K MiniLED裸机上的亮度达不到目标值，直接调整现有背光Gamma能够提升高灰段亮度，因受制于功率限制，此处高灰段亮度被较大提升，势必需要将低灰段亮度大幅压低以使功率不超标，因此存在整体偏暗的场景会更暗，此时会有影响画质的风险。\n\n发明内容\n\n[0004]本申请实施例提供一种视频画面亮度调节方法、装置、显示装置及存储介质，能够使得Rtings实时动态场景中的白框在8K Mini-LED裸机上的亮度达到目标值，并符合功率限制条件，并保证画质品味。\n\n[0005]本申请实施例提供一种视频画面亮度调节方法，包括：\n\n[0006]获取显示屏待侦测的输入图像；\n\n[0007]将所述输入图像划分为预设数量的分区单元；\n\n[0008]根据所述分区单元和预设侦测分区包含的分区单元数量，得到若干多合一的侦测分区；\n\n[0009]获取各所述侦测分区的分区灰阶值；\n\n[0010]根据所述分区灰阶值对所述显示屏亮度进行调节。\n\n[0011]在一些实施例中，所述将所述输入图像划分为预设数量的分区单元，包括：\n\n[0012]获取预设的目标分区单元包含的像素数量；\n\n[0013]根据所述像素数量和所述输入图像的尺寸，将所述输入图像划分为预设数量的分区单元。\n\n[0014]在一些实施例中，所述分区单元数量包括第一分区单元数量和第二分区单元数量，所述根据所述分区单元和预设侦测分区包含的分区单元数量，得到若干多合一的侦测分区，包括：\n\n[0015]根据所述第一分区单元数量和预设的第一白框长宽比值，得到多合一的第一侦测分区；\n\n[0016]根据所述第二分区单元数量和预设的第二白框长宽比值，得到多合一的第二侦测分区。\n\n[0017]在一些实施例中，所述根据所述分区灰阶值对所述显示屏亮度进行调节，包括：\n\n[0018]根据分区灰阶值判断所述输入图像是否包含白框区域；\n\n[0019]若所述输入图像中包含白框区域，则切换背光伽玛曲线为预设伽玛曲线对所述显示屏亮度进行调节；\n\n[0020]若所述输入图像中不包含白框区域，则维持当前的背光伽玛曲线对所述显示屏亮度进行调节。\n\n[0021]在一些实施例中，所述根据所述分区灰阶值对所述显示屏亮度进行调节，包括：\n\n[0022]当所述第一侦测分区中目标第一侦测分区的分区灰阶值大于等于第一灰阶阈值，且所述目标第一侦测分区的分区灰阶值大于等于与所述目标第一侦测分区相邻的第一侦测分区的分区灰阶值时，确定所述输入图像包含第一类白框区域；\n\n[0023]当所述第二侦测分区中目标第二侦测分区的分区灰阶值大于等于第二灰阶阈值，且所述目标第二侦测分区的分区灰阶值大于等于与所述目标第二侦测分区相邻的第二侦测分区的分区灰阶值时，确定所述输入图像包含第二类白框区域；\n\n[0024]若所述输入图像同时包含所述第一类白框区域和所述第二类白框区域，则对所述显示屏亮度进行调节。\n\n[0025]在一些实施例中，所述根据所述分区灰阶值对所述显示屏亮度进行调节之前，包括：\n\n[0026]获取所述第一侦测分区包含的第一像素总数和所述第二侦测分区包含的第二像素总数；\n\n[0027]根据所述第一像素总数和预设的白框灰阶值，确定所述第一灰阶阈值；\n\n[0028]根据所述第二像素总数和预设的白框灰阶值，确定所述第二灰阶阈值。\n\n[0029]在一些实施例中，所述若所述输入图像同时包含所述第一类白框区域和所述第二类白框区域，则对所述显示屏亮度进行调节，包括：\n\n[0030]若所述输入图像同时包含所述第一类白框区域和所述第二类白框区域，则切换背光伽玛曲线为预设伽玛曲线；\n\n[0031]根据所述预设伽玛曲线，提高所述显示屏中所述第一类白框区域和所述第二类白框区域的亮度，降低所述显示屏中其它区域的亮度。\n\n[0032]本申请实施例提供一种视频画面亮度调节装置，包括：\n\n[0033]图像获取模块，用于获取显示屏待侦测的输入图像；\n\n[0034]单元划分模块，与所述图像获取模块通讯连接，用于将所述输入图像划分为预设数量的分区单元；\n\n[0035]分区划分模块，与所述单元划分模块通讯连接，用于根据所述分区单元和预设侦测分区包含的分区单元数量，得到多合一的侦测分区；\n\n[0036]数据获取模块，与所述分区划分模块通讯连接，用于获取各所述侦测分区的分区灰阶值；\n\n[0037]亮度调节模块，与所述数据获取模块通讯连接，用于根据所述分区灰阶值对所述显示屏亮度进行调节。\n\n[0038]在一些实施例中，单元划分模块还用于获取预设的目标分区单元包含的像素数量；根据所述像素数量和所述输入图像的尺寸，将所述输入图像划分为预设数量的分区单元。\n\n[0039]在一些实施例中，分区划分模块还用于根据所述第一分区单元数量和预设的第一白框长宽比值，得到多合一的第一侦测分区，所述分区单元数量包括第一分区单元数量和第二分区单元数量；根据所述第二分区单元数量和预设的第二白框长宽比值，得到多合一的第二侦测分区。\n\n[0040]在一些实施例中，亮度调节模块还用于根据分区灰阶值判断所述输入图像是否包含白框区域；若所述输入图像中包含白框区域，则切换背光伽玛曲线为预设伽玛曲线对所述显示屏亮度进行调节；若所述输入图像中不包含白框区域，则维持当前的背光伽玛曲线对所述显示屏亮度进行调节。\n\n[0041]在一些实施例中，亮度调节模块还用于当所述第一侦测分区中目标第一侦测分区的分区灰阶值大于等于第一灰阶阈值，且所述目标第一侦测分区的分区灰阶值大于等于与所述目标第一侦测分区相邻的第一侦测分区的分区灰阶值时，确定所述输入图像包含第一类白框区域；当所述第二侦测分区中目标第二侦测分区的分区灰阶值大于等于第二灰阶阈值，且所述目标第二侦测分区的分区灰阶值大于等于与所述目标第二侦测分区相邻的第二侦测分区的分区灰阶值时，确定所述输入图像包含第二类白框区域；若所述输入图像同时包含所述第一类白框区域和所述第二类白框区域，则对所述显示屏亮度进行调节。\n\n[0042]在一些实施例中，亮度调节模块还用于获取所述第一侦测分区包含的第一像素总数和所述第二侦测分区包含的第二像素总数；根据所述第一像素总数和预设的白框灰阶值，确定所述第一灰阶阈值；根据所述第二像素总数和预设的白框灰阶值，确定所述第二灰阶阈值。\n\n[0043]在一些实施例中，亮度调节模块还用于若所述输入图像同时包含所述第一类白框区域和所述第二类白框区域，则切换背光伽玛曲线为预设伽玛曲线；根据所述预设伽玛曲线，提高所述显示屏中所述第一类白框区域和所述第二类白框区域的亮度，降低所述显示屏中其它区域的亮度。\n\n[0044]本申请实施例提供一种显示装置，所述显示装置包括控制器和存储器，所述控制器用于执行存储于所述存储器的若干指令，以实现任一项所述的方法。\n\n[0045]本申请实施例提供一种存储介质，所述存储介质中存储若干指令，所述指令用于供控制器执行以实现任一项所述的方法。\n\n[0046]本申请实施例提供的视频画面亮度调节方法、装置、显示装置及存储介质，通过对输入图像进行分区得到分区单元，然后得到多合一的侦测分区，通过各个侦测分区的分区灰阶值确定白框区域，基于白框区域进行亮度调节，使得Rtings实时动态场景中的白框在8K Mini-LED裸机上的亮度达到目标值。\n\n附图说明\n\n[0047]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0048]图1为本申请一实施例中视频画面亮度调节方法的流程示意图。\n\n[0049]图2为本申请另一实施例中视频画面亮度调节方法的流程示意图。\n\n[0050]图3为本申请另一实施例中视频画面亮度调节方法的流程示意图。\n\n[0051]图4为本申请另一实施例中视频画面亮度调节方法的流程示意图。\n\n[0052]图5为本申请另一实施例中视频画面亮度调节方法的流程示意图。\n\n[0053]图6为本申请另一实施例中视频画面亮度调节方法的流程示意图。\n\n[0054]图7为本申请另一实施例中视频画面亮度调节方法的流程示意图。\n\n[0055]图8为本申请实施例中视频画面亮度调节装置的结构示意图。\n\n具体实施方式\n\n[0056]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0057]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0058]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0059]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0060]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0061]请参阅图1，本申请实施例提供一种显示器亮度调节方法，该方法包括步骤S101～S105，具体如下：\n\n[0062]S101，获取显示屏待侦测的输入图像。\n\n[0063]具体地，输入图像用于对显示屏的显示效果进行侦测，然后基于侦测结果对显示屏的显示方式进行调整，输入图像的相关参数例如尺寸等需要基于显示屏的相关参数进行选取。其中，实时动态场景中对显示器进行侦测是通过视频进行侦测，因此可以选择对视频的每一帧图像进行侦测。\n\n[0064]S102，将所述输入图像划分为预设数量的分区单元。\n\n[0065]具体地，分区单元指输入图像划分的最小单元，分区单元的大小可以根据需要进行设置，因此对应的预设数量也可以进行调整，需要说明的是，需要通过分区单元将输入图像进行整分，且等分，也就是将输入图像分为m×n个分区单元，m和n都为正整数，如4k画面分54×96个分区单元。\n\n[0066]在一个实施例中，如图2所示，本步骤包括：S201，获取预设的目标分区单元包含的像素数量；S202，根据所述像素数量和所述输入图像的尺寸，将所述输入图像划分为预设数量的分区单元。\n\n[0067]具体地，由于划分的分区单元的数量取决于分区单元的大小，因此获取预设的目标分区单元包含的像素数量，目标分区单元为当前进行侦测时想要划分的分区单元，不同的目标分区单元包含的像素数量不同，可以根据侦测的精细化需求进行设置选取。\n\n[0068]其中，输入图像的尺寸在获取到输入图像时即同步获取到，此外，由于输入图像的尺寸与显示屏的尺寸相匹配，因此也可以根据显示屏的尺寸确定输入图像的尺寸。根据像素数量和输入图像的尺寸将输入图像划分为预设数量的分区单元，例如，输入图像的尺寸为4320*7680，目标分区单元包含的像素数量为80*80，则将输入图像划分54×96个分区单元。\n\n[0069]S103，根据所述分区单元和预设侦测分区包含的分区单元数量，得到若干多合一的侦测分区。\n\n[0070]其中，多合一指将多个分区单元合并为一个侦测分区，然后对侦测分区进行分析判断其是否为白框区域。此外，不同的侦测分区其大小不同，因此根据分区单元和预设侦测分区包含的分区单元数量得到若干多合一的侦测分区。\n\n[0071]在一个实施例中，如图3所示，本步骤包括：S301，所述分区单元数量包括第一分区单元数量和第二分区单元数量，根据所述第一分区单元数量和预设的第一白框长宽比值，得到多合一的第一侦测分区；S302，根据所述第二分区单元数量和预设的第二白框长宽比值，得到多合一的第二侦测分区。\n\n[0072]其中，不同的侦测分区其大小不同，分区单元数量包括第一分区单元数量和第二分区单元数量，第一分区单元数量为第一侦测分区内包含的分区单元的数量，第二分区单元数量为第二侦测分区内包含的分区单元的数量。此外，对于同一分区单元数量，其侦测分区的长宽比不同，对应的区域形状不同，例如，如果某一侦测分区包含88个分区单元，那么该侦测分区对应的尺寸为11*8或22-4也需要进一步确定。因此不同的侦测分区需要基于其包含的分区单元数量和对应的白框长宽比值进行确定，只需要确定任意的侦测分区不能超出输入图像的边界，白框长宽比值包括第一白框长宽比值和第二白框长宽比值。\n\n[0073]例如，对于基于Local Dimming的Rtings侦测方案，其包括小白框侦测和大白框侦测，小白框侦测过程中的侦测分区对应为第一侦测分区，大白框侦测过程中的侦测分区对应为第二侦测分区。输入图像的尺寸为4320*7680，目标分区单元包含的像素数量为80*80，则将输入图像划分54×96个分区单元。Rtings场景小白框大小为88个分区单元，第一白框长宽比值为11*8，将得到的54×96个分区单元从左上角水平11个分区单元竖直8个分区单元作为第1个第一侦测分区，从左到右，从上到下，每次移动步长为1个分区单元，依此进行88合1操作，得到P_88in1＝44×89个第一侦测分区，也就是说任意组合得到输入图像中所有的第一侦测分区，且第一侦测分区不可拆分。以此类推划分得到第二侦测分区。\n\n[0074]需要说明的是第一分区单元数量和第二分区单元数量可以自己与不同的白框大小进行自由设置，也就是上述举例中的小白框大小可以为88个分区单元，也可以是其它的量。例如，因Rtings画面为动态场景，大白框面积不是定值，有些帧为266个分区单元，有些帧为285个分区单元，则将得到的分区单元从左上角水平19个分区单元竖直14与15个分区单元作为第1个第二侦测分区，从左到右，从上到下，每次移动步长为1个分区单元，依此进行266合1与285合1操作，得到P_266in1＝36×83与P_285in1＝36×82个第二侦测分区。本实施例中至少要分别划分出第一侦测分区和第二侦测分区，如果为了进一步为了提高进度，可以选择按照上述方式划分第三侦测分区等。\n\n[0075]S104，获取各所述侦测分区的分区灰阶值。\n\n[0076]具体地，分别统计获取各侦测分区的分区灰阶值，侦测分区包括第一侦测分区和第二侦测分区。其中，为了减少统计量，避免在每个侦测分区都要逐一对各个像素点的灰阶值进行获取统计，在步骤S102将输入图像划分为预设数量的分区单元之后，可以对各个分区单元的灰阶值总和进行统计，之后对各侦测分区的分区灰阶值获取时可以直接基于各个分区单元的灰阶值总和进行计算。\n\n[0077]S105，根据所述分区灰阶值对所述显示屏亮度进行调节。\n\n[0078]具体地，根据分区灰阶值对显示屏亮度进行调节，使得Rtings实时动态场景中的白框在8K Mini-LED裸机上的亮度达到目标值，并符合功率限制条件，并保证画质效果。\n\n[0079]在一个实施例中，如图4所示，本步骤包括：S401，根据分区灰阶值判断所述输入图像是否包含白框区域；S402，若所述输入图像中包含白框区域，则切换背光伽玛曲线为预设伽玛曲线对所述显示屏亮度进行调节；S403，若所述输入图像中不包含白框区域，则维持当前的背光伽玛曲线对所述显示屏亮度进行调节。\n\n[0080]其中，白框区域为灰阶值为白光且灰阶值大于周围区域的侦测分区，因此根据分区灰阶值判断输入图像是否包含白框区域，也就是判断是否有侦测分区是白框区域。如果输入图像中不包含白框区域，说明当前的亮度显示效果较好，维持当前的背光伽玛曲线对显示屏亮度进行调节。如果输入图像中包含白框区域，直接根据现有背光Gamma曲线进行调整能够提升高灰段亮度，但存在整体偏暗的场景会更暗，因此切换背光伽玛曲线为预设伽玛曲线对显示屏亮度进行调节。\n\n[0081]需要说明的是，预设伽玛曲线可以是唯一的背光伽玛曲线，也就是所有判定存在白框区域的输入图像均调整为同一背光伽玛曲线进行亮度调节。但预设伽玛曲线也可以根据白框区域的灰阶总值进行确定，以选择更加合适的背光伽玛曲线进行亮度调节。\n\n[0082]在一个实施例中，如图5所示，本步骤包括：S501，当所述第一侦测分区中目标第一侦测分区的分区灰阶值大于等于第一灰阶阈值，且所述目标第一侦测分区的分区灰阶值大于等于与所述目标第一侦测分区相邻的第一侦测分区的分区灰阶值时，确定所述输入图像包含第一类白框区域；S502，当所述第二侦测分区中目标第二侦测分区的分区灰阶值大于等于第二灰阶阈值，且所述目标第二侦测分区的分区灰阶值大于等于与所述目标第二侦测分区相邻的第二侦测分区的分区灰阶值时，确定所述输入图像包含第二类白框区域；S503，若所述输入图像同时包含所述第一类白框区域和所述第二类白框区域，则对所述显示屏亮度进行调节。\n\n[0083]其中，判定侦测分区是否为白框区域需要满足两个条件，一是侦测分区本身的分区灰阶值超过阈值，二是侦测分区的分区灰阶值大于该侦测分区相邻的分区灰阶值。且由于侦测分区包含第一侦测分区和第二侦测分区，因此需要注意判断第一侦测分区是否存在目标第一侦测分区为第一类白框区域，第二侦测分区是否存在目标第二侦测分区为第二类白框区域。如果第一类白框区域和第二类白框区域同时存在，说明输入图像包含白框区域，则需要对显示屏亮度进行调节。\n\n[0084]例如，输入图像的尺寸为4320*7680，目标分区单元包含的像素数量为80*80，则将输入图像划分54×96个分区单元。Rtings场景小白框大小为88个分区单元，得到P_88in1＝44×89个第一侦测分区。因Rtings画面为动态场景，大白框面积不是定值，有些帧为266个分区单元，有些帧为285个分区单元，则依此进行266合1或285合1操作，得到P_266in1＝36×83与P_285in1＝36×82个第二侦测分区。小白框侦测：①依此判断P_88in1每个第一侦测分区的分区灰阶值是否大于第一灰阶阈值small_box_thre；②该第一侦测分区的分区灰阶值是否大于相邻四周第一侦测分区各自对应的分区灰阶值；若这两个条件判断结果均为“是”，则该画面有小白框。大白框侦测：①依此判断P_266in1或P_285in1每个第二侦测分区的分区灰阶值是否大于第二灰阶阈值big_box266_thre或big_box285_thre，二者判断结果为“或”逻辑关系；②该第二侦测分区的分区灰阶值是否大于相邻四周第二侦测分区各自对应的分区灰阶值；若这两个条件判断结果均为“是”，则该画面有大白框。当判断画面同时有小白框和大白框，则输入图像中包含白框区域，此帧输入图像为Rtings测试画面。若侦测到非Rtings画面时，维持现有背光Gamma曲线即可；若侦测Rtings场景画面，切换背光Gamma曲线，提高白框区域的亮度，降低画面暗区域亮度。\n\n[0085]在一个实施例中，如图6所示，本步骤之前包括：S601，获取所述第一侦测分区包含的第一像素总数和所述第二侦测分区包含的第二像素总数；S602，根据所述第一像素总数和预设的白框灰阶值，确定所述第一灰阶阈值；S603，根据所述第二像素总数和预设的白框灰阶值，确定所述第二灰阶阈值。\n\n[0086]具体地，由于侦测分区的大小可以根据不同的要求进行调节，不同大小的侦测分区对应不同的灰阶阈值。因此获取第一侦测分区包含的第一像素总数和第二侦测分区包含的第二像素总数。例如，输入图像的尺寸为4320*7680，目标分区单元包含的像素数量为80*80，则将输入图像划分54×96个分区单元。Rtings场景小白框大小为88个分区单元，得到P_88in1＝44×89个第一侦测分区，则一个第一侦测分区中包含的第一像素总数为80*80*88。由于灰阶阈值是用于判定侦测分区的分区灰阶值是否达到白框的标准，一般白框的灰阶值为确定数值例如255灰阶，因此根据第一像素总数和预设的白框灰阶值确定第一灰阶阈值，根据第二像素总数和预设的白框灰阶值确定第二灰阶阈值。\n\n[0087]在一个实施例中，如图7所示，步骤S503，若所述输入图像同时包含所述第一类白框区域和所述第二类白框区域，则对所述显示屏亮度进行调节包括：S701，若所述输入图像同时包含所述第一类白框区域和所述第二类白框区域，则切换背光伽玛曲线为预设伽玛曲线；S702，根据所述预设伽玛曲线，提高所述显示屏中所述第一类白框区域和所述第二类白框区域的亮度，降低所述显示屏中其它区域的亮度。\n\n[0088]具体地，如果第一类白框区域和第二类白框区域同时存在，说明输入图像包含白框区域，则需要对显示屏亮度进行调节，切换背光伽玛曲线为预设伽玛曲线。根据预设伽玛曲线提高显示屏中第一类白框区域和第二类白框区域的亮度，此处仅会提高白框亮度值，因此对功率影响较小，稍降低显示屏中其它区域亮度即可满足功率要求，符合功率限制条件并可达到白框亮度的目标值，不会影响画质。\n\n[0089]本实施例通过侦测Rtings实时动态场景，切换背光Gamma曲线，提高白框区域的亮度，降低画面暗区域亮度，符合功率限制条件并可达到白框亮度的目标值。\n\n[0090]为了更好实施本申请实施例中的视频画面亮度调节方法，在视频画面亮度调节方法基础之上，本申请实施例中还提供一种视频画面亮度调节装置，如图8所示，视频画面亮度调节装置100包括：\n\n[0091]图像获取模块110，用于获取显示屏待侦测的输入图像；\n\n[0092]单元划分模块120，与所述图像获取模块110通讯连接，用于将所述输入图像划分为预设数量的分区单元；\n\n[0093]分区划分模块130，与所述单元划分模块120通讯连接，用于根据所述分区单元和预设侦测分区包含的分区单元数量，得到多合一的侦测分区；\n\n[0094]数据获取模块140，与所述分区划分模块130通讯连接，用于获取各所述侦测分区的分区灰阶值；\n\n[0095]亮度调节模块150，与所述数据获取模块140通讯连接，用于根据所述分区灰阶值对所述显示屏亮度进行调节。\n\n[0096]在一些实施例中，单元划分模块120还用于获取预设的目标分区单元包含的像素数量；根据所述像素数量和所述输入图像的尺寸，将所述输入图像划分为预设数量的分区单元。\n\n[0097]在一些实施例中，分区划分模块130还用于根据所述第一分区单元数量和预设的第一白框长宽比值，得到多合一的第一侦测分区，所述分区单元数量包括第一分区单元数量和第二分区单元数量；根据所述第二分区单元数量和预设的第二白框长宽比值，得到多合一的第二侦测分区。\n\n[0098]在一些实施例中，亮度调节模块150还用于根据分区灰阶值判断所述输入图像是否包含白框区域；若所述输入图像中包含白框区域，则切换背光伽玛曲线为预设伽玛曲线对所述显示屏亮度进行调节；若所述输入图像中不包含白框区域，则维持当前的背光伽玛曲线对所述显示屏亮度进行调节。\n\n[0099]在一些实施例中，亮度调节模块150还用于当所述第一侦测分区中目标第一侦测分区的分区灰阶值大于等于第一灰阶阈值，且所述目标第一侦测分区的分区灰阶值大于等于与所述目标第一侦测分区相邻的第一侦测分区的分区灰阶值时，确定所述输入图像包含第一类白框区域；当所述第二侦测分区中目标第二侦测分区的分区灰阶值大于等于第二灰阶阈值，且所述目标第二侦测分区的分区灰阶值大于等于与所述目标第二侦测分区相邻的第二侦测分区的分区灰阶值时，确定所述输入图像包含第二类白框区域；若所述输入图像同时包含所述第一类白框区域和所述第二类白框区域，则对所述显示屏亮度进行调节。\n\n[0100]在一些实施例中，亮度调节模块150还用于获取所述第一侦测分区包含的第一像素总数和所述第二侦测分区包含的第二像素总数；根据所述第一像素总数和预设的白框灰阶值，确定所述第一灰阶阈值；根据所述第二像素总数和预设的白框灰阶值，确定所述第二灰阶阈值。\n\n[0101]在一些实施例中，亮度调节模块150还用于若所述输入图像同时包含所述第一类白框区域和所述第二类白框区域，则切换背光伽玛曲线为预设伽玛曲线；根据所述预设伽玛曲线，提高所述显示屏中所述第一类白框区域和所述第二类白框区域的亮度，降低所述显示屏中其它区域的亮度。\n\n[0102]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0103]本发明还提供了显示装置，所述显示装置包括存储器和控制器，所述控制器用于执行存储于所述存储器的若干指令，以实现如上文所述的视频画面亮度调节方法。\n\n[0104]在一实施例中，本发明提供存储介质，所述存储介质中存储若干指令，所述指令用于供控制器执行以实现如上文任一所述的视频画面亮度调节方法。需要说明的是，本领域普通技术人员可以理解上述实施例的各种方法中的全部或部分步骤是可以通过程序来指令相关的硬件来完成。其中，存储介质可以包括：只读存储器(ROM，Read Only Memory)、随机存取记忆体(RAM，Random Access Memory)、磁盘或光盘等。\n\n[0105]以上对本申请实施例所提供的一种视频画面亮度调节方法、装置、显示装置及存储介质进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (10995, 24049, '技术领域\n\n[0001]本发明涉及电子显示技术领域，尤其是涉及一种电致发光器件、其制备方法和显示器件。\n\n背景技术\n\n[0002]作为可视信息传输媒介的显示器件在人们的日常生产生活中扮演着越来越重要的角色。为了提升实际使用性能，显示器件正朝着更轻、更薄、更低能耗、更低成本以及更好图像质量的趋势发展。\n\n[0003]量子点发光二极管(QLED)具有自发光、反应快、视角广、亮度高及可轻薄化等优点，被认为是继有机发光二极管之后最有潜力的可用作显示器件的发光二极管。通常的显示面板中包括红、绿、蓝三种颜色的发光二极管。通过控制同一像素上的三色发光二极管各自的光强，可以调配出不同颜色的光。传统的量子点发光二极管中，红、绿两色的量子点发光二极管在效率和寿命上均已逐渐提升至能够满足基本的商业化需求，但蓝色的量子点发光二极管进展较为缓慢，其性能距离满足商业化需求还存在较大差距。这限制了以量子点发光二极管作为显示器件中发光元件的充分利用，减缓了其商业化进程。\n\n发明内容\n\n[0004]基于此，本发明的目的之在于设计一种电致发光器件，以充分利用红色量子点发光二极管和绿色量子点发光二极管的优异性能并加速其商业化进程。\n\n[0005]一种电致发光器件，其包括：相对设置的阴极和阳极；\n\n[0006]同层设置于所述阴极与所述阳极之间的红色子发光单元、绿色子发光单元和蓝色子发光单元；\n\n[0007]其中，\n\n[0008]所述红色子发光单元包括红色量子点发光层；\n\n[0009]所述绿色子发光单元包括绿色量子点发光层；\n\n[0010]所述蓝色子发光单元包括蓝光Micro-LED功能主体，所述蓝光Micro-LED功能主体中包括p型半导体层和n型半导体层，所述p型半导体层相较于所述n型半导体层靠近于所述阳极设置。\n\n[0011]在其中一个实施例中，电致发光器件还包括：\n\n[0012]钝化层，所述钝化层用于封装所述蓝光Micro-LED功能主体；\n\n[0013]其中，所述阴极和所述阳极中的一者为顶电极，所述钝化层包覆所述蓝光Micro-LED功能主体的侧壁，或者，所述钝化层包覆所述蓝光Micro-LED功能主体的侧壁以及靠近所述顶电极的部分端面。\n\n[0014]在其中一个实施例中，所述钝化层的材料选自氮化硅、二氧化硅和氧化铝的一种或多种。\n\n[0015]在其中一个实施例中，电致发光器件还包括：\n\n[0016]像素界定层，所述像素界定层限定出多个间隔分布的开口区域，所述多个开口区域用于容纳所述红色子发光单元、所述绿色子发光单元和所述蓝色子发光单元；\n\n[0017]其中，所述阴极和所述阳极中的一者为顶电极，所述像素界定层包覆所述蓝色子发光单元的侧壁，或者，所述像素限定层包覆所述蓝色子发光单元的侧壁以及靠近所述顶电极的部分端面。\n\n[0018]在其中一个实施例中，所述像素界定层的材料选自疏水的光阻材料。\n\n[0019]在其中一个实施例中，所述蓝光Micro-LED功能主体还包括：\n\n[0020]发光材料层，所述发光材料层设置于所述p型半导体层与所述n型半导体层之间；\n\n[0021]第一电极，所述第一电极设置于所述p型半导体层远离所述n型半导体层的一侧；及\n\n[0022]第二电极，所述第二电极设置于所述n型半导体层远离所述p型半导体层的一侧。\n\n[0023]在其中一个实施例中，所述p型半导体选自p型GaN，所述n型半导体选自n型GaN。\n\n[0024]对应地，一种电致发光器件的制备方法，其包括如下步骤：\n\n[0025]将蓝光Micro-LED功能主体转移至设置有底电极的基板上，以使所述蓝光Micro-LED功能主体设置于所述基板上蓝色子发光单元所处区域的底电极上；\n\n[0026]在所述基板上的红色子发光单元所处区域的底电极上和绿色子发光单元所处区域的底电极上，分别制备红色子发光单元和绿色子发光单元，其中，所述红色子发光单元包括红色量子点发光层，所述绿色子发光单元包括绿色量子点发光层；\n\n[0027]在所述蓝光Micro-LED功能主体、所述红色子发光单元和所述绿色子发光单元远离底电极一侧的表面制备顶电极；\n\n[0028]其中，所述底电极是阴极和阳极中的一者，所述顶电极是阴极和阳极中的另一者，所述蓝光Micro-LED功能主体中包括靠近所述阳极设置的p型半导体层和靠近所述阴极设置的n型半导体层。\n\n[0029]在其中一个实施例中，在所述将蓝光Micro-LED功能主体转移至设置有底电极的基板上之后，还包括如下步骤：\n\n[0030]在所述基板上沉积钝化层材料后进行图案化处理，以制备钝化层，所述钝化层包覆所述蓝光Micro-LED功能主体的侧壁、并暴露所述蓝光Micro-LED功能主体靠近所述顶电极的至少部分端面。\n\n[0031]在其中一个实施例中，在制备所述钝化层之后，还包括：\n\n[0032]在所述基板上形成像素界定层材料并进行图案化处理，以制备像素界定层，所述像素界定层包覆所述蓝光Micro-LED功能主体的侧壁、并暴露所述蓝光Micro-LED功能主体靠近所述顶电极的至少部分端面。\n\n[0033]在其中一个实施例中，制备所述红色量子点发光层的方法包括在所述红色子发光单元所处区域喷涂红色量子点墨水。\n\n[0034]在其中一个实施例中，制备所述绿色量子点发光层的方法包括在所述绿色子发光单元所处区域喷涂绿色量子点墨水。\n\n[0035]进一步地，一种显示器件，其包括根据上述任一实施例所述的电致发光器件，或者根据上述任一实施例所述的电致发光器件的制备方法制备得到的电致发光器件；\n\n[0036]驱动元件，所述驱动元件与所述电致发光器件电连接，用于驱动所述电致发光器件的发光。\n\n[0037]上述实施例提供的电致发光器件中，选用垂直结构的蓝光Micro-LED功能主体替代蓝色量子点发光二极管，避免了传统的蓝色量子点发光二极管低效率和低寿命的缺点。该电致发光器件具有蓝光Micro-LED功能主体的高效率和长寿命的优势，以充分利用红色、绿色量子点发光二极管高色纯度的优点，实现了低成本、高效率、高稳定性的全色量子点发光显示器件，能够促进红色、绿色量子点发光二极管的商业化应用。\n\n[0038]该实施例提供的电致发光器件的制备方法通过采用将预制备的蓝光Micro-LED功能主体转移到用于制备量子点发光二极管的基板上的方法，以克服Micro-LED和量子点发光二极管的制程之间存在显著差异的问题，实现了集成蓝光Micro-LED功能主体与红色、绿色量子点发光二极管的集成。\n\n附图说明\n\n[0039]图1为本发明一实施例的电致发光器件的结构示意图；\n\n[0040]图2为图1示出的电致发光器件中的蓝色子发光单元的结构示意图；\n\n[0041]图3为图1示出的电致发光器件中的绿色子发光单元的结构示意图；\n\n[0042]图4为本发明另一实施例的电致发光器件的结构示意图；\n\n[0043]图5为本发明又一实施例的电致发光器件的结构示意图；\n\n[0044]图6为本发明电致发光器件的制备过程示意图。\n\n[0045]附图标记：\n\n[0046]110：基板；120：底电极；131：蓝色子发光单元；1311：第一电极；1312：p型半导体层；1313：发光材料层；1314：n型半导体层；1315：第二电极；132：绿色子发光单元；1321：电子注入层；1322：电子传输层；1323：绿色量子点发光层；1324：空穴传输层；1325：空穴注入层；133：红色子发光单元；140：顶电极；150：钝化层；160：像素界定层；210：基板；220：底电极；231：蓝色子发光单元；232：绿色子发光单元；233：红色子发光单元；240：顶电极；250：钝化层；260：像素界定层；310：基板；320：底电极；331：蓝色子发光单元；332：绿色子发光单元；333：红色子发光单元；340：顶电极；360：像素界定层。\n\n具体实施方式\n\n[0047]为了便于理解本发明，下面将参照相关附图对本发明进行更全面的描述。附图中给出了本发明的较佳实施例。但是，本发明可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本发明的公开内容的理解更加透彻全面。\n\n[0048]除非另有定义，本文所使用的所有的技术和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同。本文中在本发明的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本发明。本文所使用的术语“和/或”包括一个或多个相关的所列项目的任意的和所有的组合。本文所使用的“多”表示两个或两个以上项目的组合。如未明示或本领域技术人员不对此具有通常理解，应认为本申请中的占比或浓度的等概念为质量占比或质量浓度。\n\n[0049]为了充分利用红色量子点发光二极管和绿色量子点发光二极管的优异性能，加快其商用进程，根据本发明的一个实施例，其设计了一种电致发光器件。该电致发光器件包括：相对设置的阴极和阳极，以及同层设置于阴极与阳极之间的红色子发光单元、绿色子发光单元和蓝色子发光单元。其中，红色子发光单元包括红色量子点发光层；绿色子发光单元包括绿色量子点发光层；蓝色子发光单元包括蓝光Micro-LED功能主体，蓝光Micro-LED功能主体中包括p型半导体层和n型半导体层，p型半导体层相较于n型半导体层靠近于阳极设置。\n\n[0050]其中，Micro-LED指的是微型发光二极管(Micro-LED)。传统的二极管中通常包括用于产生空穴的p型半导体层和用于产生电子的n型半导体层，空穴和电子复合后可产生光子，从而进行发光。Micro-LED是将传统的二极管进行微型化制备，即将原本是块体状的各组件制备为微米级薄膜状的各组件，并通过层叠设置的方式，以大幅缩小二极管的体积。该蓝光Micro-LED功能主体的p型半导体层和n型半导体层分设于不同的两侧，分别与两侧的电极接触，是一种垂直结构的Micro-LED功能主体。\n\n[0051]其中，“同层设置”仅表示红色子发光单元、绿色子发光单元和蓝色子发光单元设置于阴极和阳极之间，而不是意味着红色子发光单元、绿色子发光单元和蓝色子发光单元的厚度相同，或是其绝对位置在同一平面上。\n\n[0052]微型发光二极管具有高效率和高稳定性的特点，但其制作成本较高，很难在大尺寸的显示面板上得到广泛应用。本实施例选择将其中的部分蓝光Micro-LED引入量子点发光二极管的制程中，以代替传统的全色量子点发光二极管中的蓝色量子点发光二极管，旨在结合蓝光Micro-LED高效率、长寿命的优势，克服传统的蓝色量子点发光二极管难以满足商业化需求的缺陷，充分发挥红、绿两色量子点发光二极管的优势。\n\n[0053]为了更直观地理解本实施例的电致发光器件的具体结构，请同时参照图1，其示出了一种电致发光器件的基本结构。\n\n[0054]该电致发光器件包括基板110、设置于基板上的像素化的各底电极120、分别设置于各底电极120上对应区域的蓝色子发光单元131、绿色子发光单元132和红色子发光单元133、设置于各色子发光单元上的顶电极140。其中，底电极120选自阳极或阴极中的一者，顶电极140选自与底电极120极性相反的电极。可以理解，顶电极和底电极中的“顶”和“底”并非暗示其绝对位置靠上，而应作如下理解：“底电极”通常靠近于或接触基板设置，“顶电极”通常暴露于外界或靠近于封装层设置。如图1示出的，顶电极140即靠上设置并暴露于外界，底电极120即靠下设置并接触基板110。\n\n[0055]在本实施例的一个具体示例中，为了便于阐述该电致发光器件的具体结构及工作原理，选取底电极120为阳极，选取顶电极140为阴极。\n\n[0056]其中，蓝色子发光单元131是蓝光Micro-LED功能主体。其中，蓝光Micro-LED功能主体包括靠近底电极120(阳极)设置的p型半导体层和靠近顶电极140(阴极)设置的n型半导体层。p型半导体层用于在通电时产生空穴，n型半导体层用于在通电时产生电子，空穴和电子再复合发光。绿色子发光单元132中包括绿色量子点发光层，“绿色量子点发光层”即在电致发光时产生绿光的量子点构成的层状薄膜。红色子发光单元133中包括红色量子点发光层，“红色量子点发光层”即在电致发光时产生红光的量子点构成的层状薄膜。\n\n[0057]在其中一个具体示例中，在蓝色子发光单元131所处区域还设置有用于封装蓝光Micro-LED功能主体的钝化层150。钝化层150包覆蓝光Micro-LED功能主体的侧壁和靠近顶电极140的部分端面。请参照图1，可以理解地，蓝光Micro-LED功能主体在其层叠方向上的面即为端面，与该端面相交的四周壁为侧壁。钝化层150包覆该蓝光Micro-LED功能主体的侧壁与部分端面，以提高蓝光Micro-LED功能主体的稳定性；同时暴露部分端面，以用于与顶电极140电接触。\n\n[0058]在其中一个具体示例中，钝化层150的材料选自氮化硅、二氧化硅和氧化铝中的一种或多种。\n\n[0059]请参照图1，钝化层150还包覆底电极120靠近蓝光Micro-LED功能主体的一面上未设置有蓝光Micro-LED功能主体的部分区域。进一步地，钝化层150还包覆底电极120的侧壁。\n\n[0060]在其中一个具体示例中，该电致发光器件还包括像素界定层160。像素界定层160限定出多个间隔分布的开口区域，该开口区域用于容纳蓝色子发光单元131、绿色子发光单元132和红色子发光单元133。其中，像素界定层160包覆蓝色子发光单元131的侧壁，或者，像素界定层160包覆蓝色子发光单元131的侧壁以及靠近顶电极140的部分端面。可以理解，像素界定层160通常的作用在于避免红、绿、蓝三色子发光单元在发光或通电过程中相互干扰，因此通常仅设置于各色子发光单元的侧壁以间隔各色子发光单元。在本实施例的电致发光器件中，像素界定层160的作用针对蓝光Micro-LED功能主体的实际制备过程及特性，还设置了覆盖蓝色子发光单元131靠近顶电极140的部分端面。\n\n[0061]在本实施例中，电致发光器件同时包括设置于蓝色子发光单元131区域的钝化层150和像素界定层160。钝化层150设置于像素界定层160和蓝色Micro-LED功能主体之间，以间隔像素界定层160和蓝色Micro-LED功能主体。\n\n[0062]在一个具体示例中，像素界定层160的材料选自疏水的光阻材料。\n\n[0063]其中，请同时参照图2，蓝色子发光单元131是一种蓝光Micro-LED功能主体，该蓝光Micro-LED功能主体中至少包括靠近阳极设置的p型半导体层1312和靠近阴极设置的n型半导体层1314。可选地，该蓝色子发光单元131还包括设置于p型半导体层1312和n型半导体层1314之间的发光材料层1313。发光材料层1313的材料可以选自具有自电光效应的多量子阱材料。可选地，该蓝色子发光单元131还包括设置于p型半导体层1312远离n型半导体层1314一侧的第一电极1311、以及设置于n型半导体层1314远离p型半导体层1312一侧的第二电极1315。在实际制备过程中，若使p型半导体层1312和底电极120(阳极)接触、n型半导体层1314和顶电极140(阴极)之间直接接触，会导致Micro-LED功能主体与量子点发光二极管的电极之间存在一定的界面问题，影响电子和空穴的注入，因而可以预先制备第一电极1311和第二电极1315。\n\n[0064]在其中一个具体示例中，p型半导体选自p型GaN，n型半导体选自n型GaN。\n\n[0065]在其中一个具体示例中，第一电极1311和/或第二电极1315的材料选自金属或导电金属氧化物。\n\n[0066]其中，请同时参照图3，绿色子发光单元132包括绿色量子点发光层1323。绿色量子点发光层1323设置于底电极120和顶电极140之间。\n\n[0067]可选地，绿色子发光单元132靠近阴极一侧还包括层叠设置的电子功能主体。电子功能主体具体包括电子传输层和电子注入层中的至少一种。在本具体示例中，电子功能主体同时包括电子传输层1322和电子注入层1321。电子传输层1322靠近绿色量子点发光层1323设置，电子注入层1321靠近阴极设置。\n\n[0068]可选地，绿色子发光单元132靠近阳极一侧还包括层叠设置的空穴功能主体。空穴功能主体具体包括空穴传输层和空穴注入层中的至少一种。在本具体示例中，空穴功能主体同时包括空穴传输层1324和空穴注入层1325。空穴传输层1324靠近绿色量子点发光层1323设置，空穴注入层1325靠近阳极设置。\n\n[0069]另外，底电极120为透明电极或反射电极，可以根据实际结构需求进行设计。底电极120的材料可以据此进行选取。例如，若该电致发光器件为底发射型，则底电极120为透明电极，则底电极120的材料可以选自导电无机金属氧化物，如ITO、IZO等，或导电银纳米线、碳纳米管等。若该电致发光器件为顶发射型，则底电极120为反射电极，则底电极120的材料可以选自金属、金属合金、或导电金属氧化物与金属的叠层导电膜层，如Al、Ag或它们的合金，或ITO/Ag/ITO叠层导电膜层。\n\n[0070]与底电极120相对的，顶电极140为反射电极或透明电极，可以根据实际需求进行设计。顶电极140的材料可以据此进行选取。例如，若该电致发光器件为底发射型，则顶电极140为反射电极，则顶电极140的材料可以选自金属、金属合金、或导电金属氧化物与金属的叠层导电膜层，如Al、Ag或它们的合金，或ITO/Ag/ITO叠层导电膜层。又如，若该电致发光器件为顶发射型，则顶电极140为透明电极，则顶电极140的材料可以选自导电无机金属氧化物，如ITO、IZO等，或导电银纳米线、碳纳米管等。\n\n[0071]请参照图4，本发明的另一个实施例提供了另一种电致发光器件，其包括基板210、设置于基板上的像素化的各底电极220、分别设置于各底电极220上对应区域的蓝色子发光单元231、绿色子发光单元232和红色子发光单元233、设置于各色子发光单元上的顶电极240。\n\n[0072]电致发光器件中还包括钝化层250和像素界定层260。该图4中的电致发光器件的结构与上述图1中的电致发光器件的结构大体相仿，因而对于其基本相同的部分请参照上述图1中的电致发光器件的结构。二者的区别主要在于电致发光器件中设置的钝化层250还延伸设置于基板210和像素界定层260之间。可选地，钝化层250延伸设置于绿色子发光单元232区域的底电极220的部分端面上，裸露出底电极220的另外一部分端面，以便于底电极220与绿色子发光单元232电接触。钝化层250还可延伸设置于红色子发光单元233区域的部分底电极220的部分端面上，以便于底电极220与红色子发光单元233电接触。\n\n[0073]请参照图5，本发明的又一个实施例提供了又一种电致发光器件，其包括基板310、设置于基板上的像素化的各底电极320、分别设置于各底电极220上对应区域的蓝色子发光单元331、绿色子发光单元332和红色子发光单元333、设置于各色子发光单元上的顶电极340。电致发光器件中还包括像素界定层360。该图5中的电致发光器件的结构与上述图1中的电致发光器件的结构大体相仿，因而对于其基本相同的部分请参照上述图1中的电致发光器件的结构。\n\n[0074]另一方面，参考图6，本发明的一个实施例还提供了一种对应于上述各电致发光器件的制备方法，其包括如下步骤。\n\n[0075]步骤S1，将蓝光Micro-LED功能主体转移至设置有底电极120的基板110上，以使蓝光Micro-LED功能主体设置于所述基板110上蓝色子发光单元131所处区域的底电极120上。\n\n[0076]具体地，使蓝光Micro-LED功能主体设置于基板110上蓝色子发光单元131所处区域的底电极120上，制备蓝色子发光单元131。底电极120是阴极或阳极，顶电极140是与底电极120极性相反的电极；蓝光Micro-LED功能主体中包括靠近阳极设置的p型半导体层和靠近阴极设置的n型半导体层。\n\n[0077]传统的Micro-LED功能主体中包括无机的p型半导体层材料和无机的n型半导体层材料，例如p型氮化镓和n型氮化镓，这使得传统的Micro-LED功能主体中的各层通常采用例如物理气相沉积法进行外延生长制备。而量子点发光二极管则通常采取溶液法，例如喷墨打印或旋涂法进行制备。可以理解，Micro-LED功能主体的制程工艺与量子点发光二极管的制程工艺之间存在显著差别，这构成了将Micro-LED与量子点发光二极管集成的技术壁垒，使技术人员通常不会尝试将二者集成到一个基板上进行制备，以获得结合Micro-LED和量子点发光二极管的发光器件。在本发明提供的电致发光器件的制备方法中，提出了先将Micro-LED制备，再将其转移至制备量子点发光二极管的基板上的技术构思，并对具体的制备工艺进行适应性改进，以采用蓝光Micro-LED代替暂时难以满足商业化应用的蓝光量子点发光二极管。\n\n[0078]在其中一个具体示例中，转移蓝光Micro-LED功能主体的方法可以选自如下手段。例如，利用Micro-LED质量和体积均极小的特点，采用具有静电的介质，依靠静电力吸附各蓝光Micro-LED，并对位转移至基板110上蓝色子发光单元131所处区域的底电极120上；又如，可采用弹性印模，该印模与各蓝光Micro-LED之间存在范德华力，使各蓝光Micro-LED吸附在弹性印模上，并对位转移至基板110上蓝色子发光单元131所处区域的底电极120上；又如，各蓝光Micro-LED上预先形成有磁性材料，则还可通过采用电磁铁的方式吸附各蓝光Micro-LED，并对位转移至基板110上蓝色子发光单元131所处区域的底电极120上。在转移过程中，可以通过分批转移的方式以降低实际制备工艺的精度需求。\n\n[0079]在其中一个具体示例中，蓝光Micro-LED功能主体中还包括设置于p型半导体层和n型半导体层之间的发光材料层。发光材料层的材料可以选自具有自电光效应的多量子阱材料。\n\n[0080]在其中一个具体示例中，蓝光Micro-LED功能主体中还包括设置于p型半导体层远离n型半导体层一侧的第一电极、以及设置于n型半导体层远离p型半导体层一侧的第二电极。\n\n[0081]在其中一个具体示例中，设置有底电极120的基板110的制备方式可以是，将底电极材料形成于基板110上，再对底电极材料进行图案化处理，去除预设的各色子发光单元所处区域以外的底电极材料。\n\n[0082]在其中一个具体示例中，基板110上还预先设置有与各色子发光单元所处区域对位的薄膜晶体管。\n\n[0083]步骤S2，在基板110上的红色子发光单元133所处区域的底电极120上和绿色子发光单元132所处区域的底电极120上分别制备红色子发光单元133和绿色子发光单元132。\n\n[0084]具体地，红色子发光单元133包括红色量子点发光层；绿色子发光单元132包括绿色量子点发光层。\n\n[0085]在其中一个具体示例中，红色子发光单元133中具体还可以包括红色量子点发光二极管中的各功能层，例如设置于红色量子点发光层两侧的电子功能层和空穴功能层。可选地，电子功能层选自电子传输层和电子注入层中的至少一种；空穴功能层可选自空穴传输层和空穴注入层中的至少一种。进一步地，在电子功能层中，电子传输层设置于靠近红色量子点发光层的一侧；在空穴功能层中，空穴传输层设置于靠近红色量子点发光层的一侧。\n\n[0086]绿色子发光单元132中具体也可以包括绿色量子点发光二极管中的各功能层，例如设置于绿色量子点发光层两侧的电子功能层和空穴功能层。可选地，电子功能层选自电子传输层和电子注入层中的至少一种；空穴功能层可选自空穴传输层和空穴注入层中的至少一种。进一步地，在电子功能层中，电子传输层设置于靠近绿色量子点发光层的一侧；在空穴功能层中，空穴传输层设置于靠近绿色量子点发光层的一侧。其与红色量子点发光二极管中的各功能层类似，可参照上述红色量子点发光二极管进行设置。\n\n[0087]在其中一个具体示例中，制备红色量子点发光层的方法为在红色子发光单元133所处区域喷涂红色量子点墨水并去除其中的溶剂。\n\n[0088]在其中一个具体示例中，制备绿色量子点发光层的方法为在绿色子发光单元132所处区域喷涂绿色量子点墨水并去除其中的溶剂。\n\n[0089]采用量子点墨水以溶液法制备量子点发光层是一种大规模、高效率的制备方法，适合于大规模商业化的应用过程。但是这也会导致量子点发光层的制程难以和蓝光Micro-LED功能主体统一。采取本实施例提供的转移已制备的蓝光Micro-LED功能主体能够较好地克服该问题。\n\n[0090]在其中一个具体示例中，在将蓝光Micro-LED功能主体转移至蓝色子发光单元131所处区域的底电极120上之后，还包括如下步骤：在基板110上沉积钝化层材料后进行图案化处理以制备钝化层150，制备的钝化层150包覆蓝光Micro-LED功能主体的侧壁、并暴露所述蓝光Micro-LED功能主体靠近所述顶电极140的至少部分端面。具体地，制备钝化层150的步骤可以在制备红色子发光单元133和绿色子发光单元132之前完成，以避免图案化钝化层150的过程中对红色子发光单元133和绿色子发光单元132带来的损伤。\n\n[0091]对应于上述实施例的电致发光器件和电致发光器件的具体结构，可以对钝化层150的图案进行不同的选取。例如，使钝化层材料仅覆盖蓝色子发光单元131区域，去除其他各区域上的钝化层材料。又如，使钝化层150同时覆盖蓝色子发光单元131区域、绿色子发光单元132区域和红色子发光单元133区域，但去除至少部分与底电极120接触的钝化层材料以暴露该底电极120。\n\n[0092]在其中一个具体示例中，在将蓝光Micro-LED功能主体转移至蓝色子发光单元131所处区域的底电极120上之后，还包括如下步骤：在基板110上形成像素界定层材料并进行图案化处理，以制备像素界定层160。制备的像素界定层160蓝光Micro-LED功能主体的侧壁、并暴露所述蓝光Micro-LED功能主体靠近所述顶电极140的至少部分端面。具体地，制备像素界定层160的步骤可以在制备红色子发光单元133和绿色子发光单元132之前完成，以避免图案化像素界定层160的过程中对红色子发光单元133和绿色子发光单元132带来的损伤。\n\n[0093]进一步地，若同时制备钝化层150和像素界定层160，则制备钝化层150的步骤可以在制备像素界定层160之前完成，以使钝化层150直接与蓝光Micro-LED功能主体接触，提高蓝光Micro-LED功能主体的稳定性。\n\n[0094]步骤S3，在蓝光Micro-LED功能主体、红色子发光单元133和绿色子发光单元132远离底电极120的一侧表面制备顶电极140。\n\n[0095]制备顶电极140的方式可以选用例如沉积法。例如，物理气相沉积法。\n\n[0096]在其中一个具体示例中，沉积制备顶电极140，以覆盖整面基板110。\n\n[0097]顶电极140的具体材料可以根据该电致发光器件是顶发射结构或底发射结构进行选取，具体地，可以参照上述电致发光器件中的顶电极140的材料选取。\n\n[0098]进一步地，本发明的一个实施例还提供了一种显示器件，其包括驱动元件和根据上述实施例的电致发光器件，驱动元件与电致发光器件电连接，用于驱动电致发光器件的发光。\n\n[0099]上述实施例提供的电致发光器件的制备方法通过采用将预制备的蓝光Micro-LED功能主体转移到用于制备量子点发光二极管的基板110上的方法，以克服Micro-LED和量子点发光二极管的制程之间存在显著差异的问题。本发明上述实施例提供的电致发光器件，选用垂直结构的蓝光Micro-LED功能主体替代蓝色量子点发光二极管，避免了传统的蓝色量子点发光二极管低效率和低寿命的缺点。该电致发光器件具有蓝光Micro-LED功能主体的高效率和长寿命的优势，以充分利用红色、绿色量子点发光二极管高色纯度的优点，实现了低成本、高效率、高稳定性的全色量子点发光显示器件，能够促进红色、绿色量子点发光二极管的商业化应用。\n\n[0100]以上实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。\n\n[0101]以上实施例仅表达了本发明的一种较佳的实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。', '技术领域\n\n[0001]本发明涉及电子显示技术领域，尤其是涉及一种电致发光器件、其制备方法和显示器件。\n\n背景技术\n\n[0002]作为可视信息传输媒介的显示器件在人们的日常生产生活中扮演着越来越重要的角色。为了提升实际使用性能，显示器件正朝着更轻、更薄、更低能耗、更低成本以及更好图像质量的趋势发展。\n\n[0003]量子点发光二极管(QLED)具有自发光、反应快、视角广、亮度高及可轻薄化等优点，被认为是继有机发光二极管之后最有潜力的可用作显示器件的发光二极管。通常的显示面板中包括红、绿、蓝三种颜色的发光二极管。通过控制同一像素上的三色发光二极管各自的光强，可以调配出不同颜色的光。传统的量子点发光二极管中，红、绿两色的量子点发光二极管在效率和寿命上均已逐渐提升至能够满足基本的商业化需求，但蓝色的量子点发光二极管进展较为缓慢，其性能距离满足商业化需求还存在较大差距。这限制了以量子点发光二极管作为显示器件中发光元件的充分利用，减缓了其商业化进程。\n\n发明内容\n\n[0004]基于此，本发明的目的之在于设计一种电致发光器件，以充分利用红色量子点发光二极管和绿色量子点发光二极管的优异性能并加速其商业化进程。\n\n[0005]一种电致发光器件，其包括：相对设置的阴极和阳极；\n\n[0006]同层设置于所述阴极与所述阳极之间的红色子发光单元、绿色子发光单元和蓝色子发光单元；\n\n[0007]其中，\n\n[0008]所述红色子发光单元包括红色量子点发光层；\n\n[0009]所述绿色子发光单元包括绿色量子点发光层；\n\n[0010]所述蓝色子发光单元包括蓝光Micro-LED功能主体，所述蓝光Micro-LED功能主体中包括p型半导体层和n型半导体层，所述p型半导体层相较于所述n型半导体层靠近于所述阳极设置。\n\n[0011]在其中一个实施例中，电致发光器件还包括：\n\n[0012]钝化层，所述钝化层用于封装所述蓝光Micro-LED功能主体；\n\n[0013]其中，所述阴极和所述阳极中的一者为顶电极，所述钝化层包覆所述蓝光Micro-LED功能主体的侧壁，或者，所述钝化层包覆所述蓝光Micro-LED功能主体的侧壁以及靠近所述顶电极的部分端面。\n\n[0014]在其中一个实施例中，所述钝化层的材料选自氮化硅、二氧化硅和氧化铝的一种或多种。\n\n[0015]在其中一个实施例中，电致发光器件还包括：\n\n[0016]像素界定层，所述像素界定层限定出多个间隔分布的开口区域，所述多个开口区域用于容纳所述红色子发光单元、所述绿色子发光单元和所述蓝色子发光单元；\n\n[0017]其中，所述阴极和所述阳极中的一者为顶电极，所述像素界定层包覆所述蓝色子发光单元的侧壁，或者，所述像素限定层包覆所述蓝色子发光单元的侧壁以及靠近所述顶电极的部分端面。\n\n[0018]在其中一个实施例中，所述像素界定层的材料选自疏水的光阻材料。\n\n[0019]在其中一个实施例中，所述蓝光Micro-LED功能主体还包括：\n\n[0020]发光材料层，所述发光材料层设置于所述p型半导体层与所述n型半导体层之间；\n\n[0021]第一电极，所述第一电极设置于所述p型半导体层远离所述n型半导体层的一侧；及\n\n[0022]第二电极，所述第二电极设置于所述n型半导体层远离所述p型半导体层的一侧。\n\n[0023]在其中一个实施例中，所述p型半导体选自p型GaN，所述n型半导体选自n型GaN。\n\n[0024]对应地，一种电致发光器件的制备方法，其包括如下步骤：\n\n[0025]将蓝光Micro-LED功能主体转移至设置有底电极的基板上，以使所述蓝光Micro-LED功能主体设置于所述基板上蓝色子发光单元所处区域的底电极上；\n\n[0026]在所述基板上的红色子发光单元所处区域的底电极上和绿色子发光单元所处区域的底电极上，分别制备红色子发光单元和绿色子发光单元，其中，所述红色子发光单元包括红色量子点发光层，所述绿色子发光单元包括绿色量子点发光层；\n\n[0027]在所述蓝光Micro-LED功能主体、所述红色子发光单元和所述绿色子发光单元远离底电极一侧的表面制备顶电极；\n\n[0028]其中，所述底电极是阴极和阳极中的一者，所述顶电极是阴极和阳极中的另一者，所述蓝光Micro-LED功能主体中包括靠近所述阳极设置的p型半导体层和靠近所述阴极设置的n型半导体层。\n\n[0029]在其中一个实施例中，在所述将蓝光Micro-LED功能主体转移至设置有底电极的基板上之后，还包括如下步骤：\n\n[0030]在所述基板上沉积钝化层材料后进行图案化处理，以制备钝化层，所述钝化层包覆所述蓝光Micro-LED功能主体的侧壁、并暴露所述蓝光Micro-LED功能主体靠近所述顶电极的至少部分端面。\n\n[0031]在其中一个实施例中，在制备所述钝化层之后，还包括：\n\n[0032]在所述基板上形成像素界定层材料并进行图案化处理，以制备像素界定层，所述像素界定层包覆所述蓝光Micro-LED功能主体的侧壁、并暴露所述蓝光Micro-LED功能主体靠近所述顶电极的至少部分端面。\n\n[0033]在其中一个实施例中，制备所述红色量子点发光层的方法包括在所述红色子发光单元所处区域喷涂红色量子点墨水。\n\n[0034]在其中一个实施例中，制备所述绿色量子点发光层的方法包括在所述绿色子发光单元所处区域喷涂绿色量子点墨水。\n\n[0035]进一步地，一种显示器件，其包括根据上述任一实施例所述的电致发光器件，或者根据上述任一实施例所述的电致发光器件的制备方法制备得到的电致发光器件；\n\n[0036]驱动元件，所述驱动元件与所述电致发光器件电连接，用于驱动所述电致发光器件的发光。\n\n[0037]上述实施例提供的电致发光器件中，选用垂直结构的蓝光Micro-LED功能主体替代蓝色量子点发光二极管，避免了传统的蓝色量子点发光二极管低效率和低寿命的缺点。该电致发光器件具有蓝光Micro-LED功能主体的高效率和长寿命的优势，以充分利用红色、绿色量子点发光二极管高色纯度的优点，实现了低成本、高效率、高稳定性的全色量子点发光显示器件，能够促进红色、绿色量子点发光二极管的商业化应用。\n\n[0038]该实施例提供的电致发光器件的制备方法通过采用将预制备的蓝光Micro-LED功能主体转移到用于制备量子点发光二极管的基板上的方法，以克服Micro-LED和量子点发光二极管的制程之间存在显著差异的问题，实现了集成蓝光Micro-LED功能主体与红色、绿色量子点发光二极管的集成。\n\n附图说明\n\n[0039]图1为本发明一实施例的电致发光器件的结构示意图；\n\n[0040]图2为图1示出的电致发光器件中的蓝色子发光单元的结构示意图；\n\n[0041]图3为图1示出的电致发光器件中的绿色子发光单元的结构示意图；\n\n[0042]图4为本发明另一实施例的电致发光器件的结构示意图；\n\n[0043]图5为本发明又一实施例的电致发光器件的结构示意图；\n\n[0044]图6为本发明电致发光器件的制备过程示意图。\n\n[0045]附图标记：\n\n[0046]110：基板；120：底电极；131：蓝色子发光单元；1311：第一电极；1312：p型半导体层；1313：发光材料层；1314：n型半导体层；1315：第二电极；132：绿色子发光单元；1321：电子注入层；1322：电子传输层；1323：绿色量子点发光层；1324：空穴传输层；1325：空穴注入层；133：红色子发光单元；140：顶电极；150：钝化层；160：像素界定层；210：基板；220：底电极；231：蓝色子发光单元；232：绿色子发光单元；233：红色子发光单元；240：顶电极；250：钝化层；260：像素界定层；310：基板；320：底电极；331：蓝色子发光单元；332：绿色子发光单元；333：红色子发光单元；340：顶电极；360：像素界定层。\n\n具体实施方式\n\n[0047]为了便于理解本发明，下面将参照相关附图对本发明进行更全面的描述。附图中给出了本发明的较佳实施例。但是，本发明可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本发明的公开内容的理解更加透彻全面。\n\n[0048]除非另有定义，本文所使用的所有的技术和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同。本文中在本发明的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本发明。本文所使用的术语“和/或”包括一个或多个相关的所列项目的任意的和所有的组合。本文所使用的“多”表示两个或两个以上项目的组合。如未明示或本领域技术人员不对此具有通常理解，应认为本申请中的占比或浓度的等概念为质量占比或质量浓度。\n\n[0049]为了充分利用红色量子点发光二极管和绿色量子点发光二极管的优异性能，加快其商用进程，根据本发明的一个实施例，其设计了一种电致发光器件。该电致发光器件包括：相对设置的阴极和阳极，以及同层设置于阴极与阳极之间的红色子发光单元、绿色子发光单元和蓝色子发光单元。其中，红色子发光单元包括红色量子点发光层；绿色子发光单元包括绿色量子点发光层；蓝色子发光单元包括蓝光Micro-LED功能主体，蓝光Micro-LED功能主体中包括p型半导体层和n型半导体层，p型半导体层相较于n型半导体层靠近于阳极设置。\n\n[0050]其中，Micro-LED指的是微型发光二极管(Micro-LED)。传统的二极管中通常包括用于产生空穴的p型半导体层和用于产生电子的n型半导体层，空穴和电子复合后可产生光子，从而进行发光。Micro-LED是将传统的二极管进行微型化制备，即将原本是块体状的各组件制备为微米级薄膜状的各组件，并通过层叠设置的方式，以大幅缩小二极管的体积。该蓝光Micro-LED功能主体的p型半导体层和n型半导体层分设于不同的两侧，分别与两侧的电极接触，是一种垂直结构的Micro-LED功能主体。\n\n[0051]其中，“同层设置”仅表示红色子发光单元、绿色子发光单元和蓝色子发光单元设置于阴极和阳极之间，而不是意味着红色子发光单元、绿色子发光单元和蓝色子发光单元的厚度相同，或是其绝对位置在同一平面上。\n\n[0052]微型发光二极管具有高效率和高稳定性的特点，但其制作成本较高，很难在大尺寸的显示面板上得到广泛应用。本实施例选择将其中的部分蓝光Micro-LED引入量子点发光二极管的制程中，以代替传统的全色量子点发光二极管中的蓝色量子点发光二极管，旨在结合蓝光Micro-LED高效率、长寿命的优势，克服传统的蓝色量子点发光二极管难以满足商业化需求的缺陷，充分发挥红、绿两色量子点发光二极管的优势。\n\n[0053]为了更直观地理解本实施例的电致发光器件的具体结构，请同时参照图1，其示出了一种电致发光器件的基本结构。\n\n[0054]该电致发光器件包括基板110、设置于基板上的像素化的各底电极120、分别设置于各底电极120上对应区域的蓝色子发光单元131、绿色子发光单元132和红色子发光单元133、设置于各色子发光单元上的顶电极140。其中，底电极120选自阳极或阴极中的一者，顶电极140选自与底电极120极性相反的电极。可以理解，顶电极和底电极中的“顶”和“底”并非暗示其绝对位置靠上，而应作如下理解：“底电极”通常靠近于或接触基板设置，“顶电极”通常暴露于外界或靠近于封装层设置。如图1示出的，顶电极140即靠上设置并暴露于外界，底电极120即靠下设置并接触基板110。\n\n[0055]在本实施例的一个具体示例中，为了便于阐述该电致发光器件的具体结构及工作原理，选取底电极120为阳极，选取顶电极140为阴极。\n\n[0056]其中，蓝色子发光单元131是蓝光Micro-LED功能主体。其中，蓝光Micro-LED功能主体包括靠近底电极120(阳极)设置的p型半导体层和靠近顶电极140(阴极)设置的n型半导体层。p型半导体层用于在通电时产生空穴，n型半导体层用于在通电时产生电子，空穴和电子再复合发光。绿色子发光单元132中包括绿色量子点发光层，“绿色量子点发光层”即在电致发光时产生绿光的量子点构成的层状薄膜。红色子发光单元133中包括红色量子点发光层，“红色量子点发光层”即在电致发光时产生红光的量子点构成的层状薄膜。\n\n[0057]在其中一个具体示例中，在蓝色子发光单元131所处区域还设置有用于封装蓝光Micro-LED功能主体的钝化层150。钝化层150包覆蓝光Micro-LED功能主体的侧壁和靠近顶电极140的部分端面。请参照图1，可以理解地，蓝光Micro-LED功能主体在其层叠方向上的面即为端面，与该端面相交的四周壁为侧壁。钝化层150包覆该蓝光Micro-LED功能主体的侧壁与部分端面，以提高蓝光Micro-LED功能主体的稳定性；同时暴露部分端面，以用于与顶电极140电接触。\n\n[0058]在其中一个具体示例中，钝化层150的材料选自氮化硅、二氧化硅和氧化铝中的一种或多种。\n\n[0059]请参照图1，钝化层150还包覆底电极120靠近蓝光Micro-LED功能主体的一面上未设置有蓝光Micro-LED功能主体的部分区域。进一步地，钝化层150还包覆底电极120的侧壁。\n\n[0060]在其中一个具体示例中，该电致发光器件还包括像素界定层160。像素界定层160限定出多个间隔分布的开口区域，该开口区域用于容纳蓝色子发光单元131、绿色子发光单元132和红色子发光单元133。其中，像素界定层160包覆蓝色子发光单元131的侧壁，或者，像素界定层160包覆蓝色子发光单元131的侧壁以及靠近顶电极140的部分端面。可以理解，像素界定层160通常的作用在于避免红、绿、蓝三色子发光单元在发光或通电过程中相互干扰，因此通常仅设置于各色子发光单元的侧壁以间隔各色子发光单元。在本实施例的电致发光器件中，像素界定层160的作用针对蓝光Micro-LED功能主体的实际制备过程及特性，还设置了覆盖蓝色子发光单元131靠近顶电极140的部分端面。\n\n[0061]在本实施例中，电致发光器件同时包括设置于蓝色子发光单元131区域的钝化层150和像素界定层160。钝化层150设置于像素界定层160和蓝色Micro-LED功能主体之间，以间隔像素界定层160和蓝色Micro-LED功能主体。\n\n[0062]在一个具体示例中，像素界定层160的材料选自疏水的光阻材料。\n\n[0063]其中，请同时参照图2，蓝色子发光单元131是一种蓝光Micro-LED功能主体，该蓝光Micro-LED功能主体中至少包括靠近阳极设置的p型半导体层1312和靠近阴极设置的n型半导体层1314。可选地，该蓝色子发光单元131还包括设置于p型半导体层1312和n型半导体层1314之间的发光材料层1313。发光材料层1313的材料可以选自具有自电光效应的多量子阱材料。可选地，该蓝色子发光单元131还包括设置于p型半导体层1312远离n型半导体层1314一侧的第一电极1311、以及设置于n型半导体层1314远离p型半导体层1312一侧的第二电极1315。在实际制备过程中，若使p型半导体层1312和底电极120(阳极)接触、n型半导体层1314和顶电极140(阴极)之间直接接触，会导致Micro-LED功能主体与量子点发光二极管的电极之间存在一定的界面问题，影响电子和空穴的注入，因而可以预先制备第一电极1311和第二电极1315。\n\n[0064]在其中一个具体示例中，p型半导体选自p型GaN，n型半导体选自n型GaN。\n\n[0065]在其中一个具体示例中，第一电极1311和/或第二电极1315的材料选自金属或导电金属氧化物。\n\n[0066]其中，请同时参照图3，绿色子发光单元132包括绿色量子点发光层1323。绿色量子点发光层1323设置于底电极120和顶电极140之间。\n\n[0067]可选地，绿色子发光单元132靠近阴极一侧还包括层叠设置的电子功能主体。电子功能主体具体包括电子传输层和电子注入层中的至少一种。在本具体示例中，电子功能主体同时包括电子传输层1322和电子注入层1321。电子传输层1322靠近绿色量子点发光层1323设置，电子注入层1321靠近阴极设置。\n\n[0068]可选地，绿色子发光单元132靠近阳极一侧还包括层叠设置的空穴功能主体。空穴功能主体具体包括空穴传输层和空穴注入层中的至少一种。在本具体示例中，空穴功能主体同时包括空穴传输层1324和空穴注入层1325。空穴传输层1324靠近绿色量子点发光层1323设置，空穴注入层1325靠近阳极设置。\n\n[0069]另外，底电极120为透明电极或反射电极，可以根据实际结构需求进行设计。底电极120的材料可以据此进行选取。例如，若该电致发光器件为底发射型，则底电极120为透明电极，则底电极120的材料可以选自导电无机金属氧化物，如ITO、IZO等，或导电银纳米线、碳纳米管等。若该电致发光器件为顶发射型，则底电极120为反射电极，则底电极120的材料可以选自金属、金属合金、或导电金属氧化物与金属的叠层导电膜层，如Al、Ag或它们的合金，或ITO/Ag/ITO叠层导电膜层。\n\n[0070]与底电极120相对的，顶电极140为反射电极或透明电极，可以根据实际需求进行设计。顶电极140的材料可以据此进行选取。例如，若该电致发光器件为底发射型，则顶电极140为反射电极，则顶电极140的材料可以选自金属、金属合金、或导电金属氧化物与金属的叠层导电膜层，如Al、Ag或它们的合金，或ITO/Ag/ITO叠层导电膜层。又如，若该电致发光器件为顶发射型，则顶电极140为透明电极，则顶电极140的材料可以选自导电无机金属氧化物，如ITO、IZO等，或导电银纳米线、碳纳米管等。\n\n[0071]请参照图4，本发明的另一个实施例提供了另一种电致发光器件，其包括基板210、设置于基板上的像素化的各底电极220、分别设置于各底电极220上对应区域的蓝色子发光单元231、绿色子发光单元232和红色子发光单元233、设置于各色子发光单元上的顶电极240。\n\n[0072]电致发光器件中还包括钝化层250和像素界定层260。该图4中的电致发光器件的结构与上述图1中的电致发光器件的结构大体相仿，因而对于其基本相同的部分请参照上述图1中的电致发光器件的结构。二者的区别主要在于电致发光器件中设置的钝化层250还延伸设置于基板210和像素界定层260之间。可选地，钝化层250延伸设置于绿色子发光单元232区域的底电极220的部分端面上，裸露出底电极220的另外一部分端面，以便于底电极220与绿色子发光单元232电接触。钝化层250还可延伸设置于红色子发光单元233区域的部分底电极220的部分端面上，以便于底电极220与红色子发光单元233电接触。\n\n[0073]请参照图5，本发明的又一个实施例提供了又一种电致发光器件，其包括基板310、设置于基板上的像素化的各底电极320、分别设置于各底电极220上对应区域的蓝色子发光单元331、绿色子发光单元332和红色子发光单元333、设置于各色子发光单元上的顶电极340。电致发光器件中还包括像素界定层360。该图5中的电致发光器件的结构与上述图1中的电致发光器件的结构大体相仿，因而对于其基本相同的部分请参照上述图1中的电致发光器件的结构。\n\n[0074]另一方面，参考图6，本发明的一个实施例还提供了一种对应于上述各电致发光器件的制备方法，其包括如下步骤。\n\n[0075]步骤S1，将蓝光Micro-LED功能主体转移至设置有底电极120的基板110上，以使蓝光Micro-LED功能主体设置于所述基板110上蓝色子发光单元131所处区域的底电极120上。\n\n[0076]具体地，使蓝光Micro-LED功能主体设置于基板110上蓝色子发光单元131所处区域的底电极120上，制备蓝色子发光单元131。底电极120是阴极或阳极，顶电极140是与底电极120极性相反的电极；蓝光Micro-LED功能主体中包括靠近阳极设置的p型半导体层和靠近阴极设置的n型半导体层。\n\n[0077]传统的Micro-LED功能主体中包括无机的p型半导体层材料和无机的n型半导体层材料，例如p型氮化镓和n型氮化镓，这使得传统的Micro-LED功能主体中的各层通常采用例如物理气相沉积法进行外延生长制备。而量子点发光二极管则通常采取溶液法，例如喷墨打印或旋涂法进行制备。可以理解，Micro-LED功能主体的制程工艺与量子点发光二极管的制程工艺之间存在显著差别，这构成了将Micro-LED与量子点发光二极管集成的技术壁垒，使技术人员通常不会尝试将二者集成到一个基板上进行制备，以获得结合Micro-LED和量子点发光二极管的发光器件。在本发明提供的电致发光器件的制备方法中，提出了先将Micro-LED制备，再将其转移至制备量子点发光二极管的基板上的技术构思，并对具体的制备工艺进行适应性改进，以采用蓝光Micro-LED代替暂时难以满足商业化应用的蓝光量子点发光二极管。\n\n[0078]在其中一个具体示例中，转移蓝光Micro-LED功能主体的方法可以选自如下手段。例如，利用Micro-LED质量和体积均极小的特点，采用具有静电的介质，依靠静电力吸附各蓝光Micro-LED，并对位转移至基板110上蓝色子发光单元131所处区域的底电极120上；又如，可采用弹性印模，该印模与各蓝光Micro-LED之间存在范德华力，使各蓝光Micro-LED吸附在弹性印模上，并对位转移至基板110上蓝色子发光单元131所处区域的底电极120上；又如，各蓝光Micro-LED上预先形成有磁性材料，则还可通过采用电磁铁的方式吸附各蓝光Micro-LED，并对位转移至基板110上蓝色子发光单元131所处区域的底电极120上。在转移过程中，可以通过分批转移的方式以降低实际制备工艺的精度需求。\n\n[0079]在其中一个具体示例中，蓝光Micro-LED功能主体中还包括设置于p型半导体层和n型半导体层之间的发光材料层。发光材料层的材料可以选自具有自电光效应的多量子阱材料。\n\n[0080]在其中一个具体示例中，蓝光Micro-LED功能主体中还包括设置于p型半导体层远离n型半导体层一侧的第一电极、以及设置于n型半导体层远离p型半导体层一侧的第二电极。\n\n[0081]在其中一个具体示例中，设置有底电极120的基板110的制备方式可以是，将底电极材料形成于基板110上，再对底电极材料进行图案化处理，去除预设的各色子发光单元所处区域以外的底电极材料。\n\n[0082]在其中一个具体示例中，基板110上还预先设置有与各色子发光单元所处区域对位的薄膜晶体管。\n\n[0083]步骤S2，在基板110上的红色子发光单元133所处区域的底电极120上和绿色子发光单元132所处区域的底电极120上分别制备红色子发光单元133和绿色子发光单元132。\n\n[0084]具体地，红色子发光单元133包括红色量子点发光层；绿色子发光单元132包括绿色量子点发光层。\n\n[0085]在其中一个具体示例中，红色子发光单元133中具体还可以包括红色量子点发光二极管中的各功能层，例如设置于红色量子点发光层两侧的电子功能层和空穴功能层。可选地，电子功能层选自电子传输层和电子注入层中的至少一种；空穴功能层可选自空穴传输层和空穴注入层中的至少一种。进一步地，在电子功能层中，电子传输层设置于靠近红色量子点发光层的一侧；在空穴功能层中，空穴传输层设置于靠近红色量子点发光层的一侧。\n\n[0086]绿色子发光单元132中具体也可以包括绿色量子点发光二极管中的各功能层，例如设置于绿色量子点发光层两侧的电子功能层和空穴功能层。可选地，电子功能层选自电子传输层和电子注入层中的至少一种；空穴功能层可选自空穴传输层和空穴注入层中的至少一种。进一步地，在电子功能层中，电子传输层设置于靠近绿色量子点发光层的一侧；在空穴功能层中，空穴传输层设置于靠近绿色量子点发光层的一侧。其与红色量子点发光二极管中的各功能层类似，可参照上述红色量子点发光二极管进行设置。\n\n[0087]在其中一个具体示例中，制备红色量子点发光层的方法为在红色子发光单元133所处区域喷涂红色量子点墨水并去除其中的溶剂。\n\n[0088]在其中一个具体示例中，制备绿色量子点发光层的方法为在绿色子发光单元132所处区域喷涂绿色量子点墨水并去除其中的溶剂。\n\n[0089]采用量子点墨水以溶液法制备量子点发光层是一种大规模、高效率的制备方法，适合于大规模商业化的应用过程。但是这也会导致量子点发光层的制程难以和蓝光Micro-LED功能主体统一。采取本实施例提供的转移已制备的蓝光Micro-LED功能主体能够较好地克服该问题。\n\n[0090]在其中一个具体示例中，在将蓝光Micro-LED功能主体转移至蓝色子发光单元131所处区域的底电极120上之后，还包括如下步骤：在基板110上沉积钝化层材料后进行图案化处理以制备钝化层150，制备的钝化层150包覆蓝光Micro-LED功能主体的侧壁、并暴露所述蓝光Micro-LED功能主体靠近所述顶电极140的至少部分端面。具体地，制备钝化层150的步骤可以在制备红色子发光单元133和绿色子发光单元132之前完成，以避免图案化钝化层150的过程中对红色子发光单元133和绿色子发光单元132带来的损伤。\n\n[0091]对应于上述实施例的电致发光器件和电致发光器件的具体结构，可以对钝化层150的图案进行不同的选取。例如，使钝化层材料仅覆盖蓝色子发光单元131区域，去除其他各区域上的钝化层材料。又如，使钝化层150同时覆盖蓝色子发光单元131区域、绿色子发光单元132区域和红色子发光单元133区域，但去除至少部分与底电极120接触的钝化层材料以暴露该底电极120。\n\n[0092]在其中一个具体示例中，在将蓝光Micro-LED功能主体转移至蓝色子发光单元131所处区域的底电极120上之后，还包括如下步骤：在基板110上形成像素界定层材料并进行图案化处理，以制备像素界定层160。制备的像素界定层160蓝光Micro-LED功能主体的侧壁、并暴露所述蓝光Micro-LED功能主体靠近所述顶电极140的至少部分端面。具体地，制备像素界定层160的步骤可以在制备红色子发光单元133和绿色子发光单元132之前完成，以避免图案化像素界定层160的过程中对红色子发光单元133和绿色子发光单元132带来的损伤。\n\n[0093]进一步地，若同时制备钝化层150和像素界定层160，则制备钝化层150的步骤可以在制备像素界定层160之前完成，以使钝化层150直接与蓝光Micro-LED功能主体接触，提高蓝光Micro-LED功能主体的稳定性。\n\n[0094]步骤S3，在蓝光Micro-LED功能主体、红色子发光单元133和绿色子发光单元132远离底电极120的一侧表面制备顶电极140。\n\n[0095]制备顶电极140的方式可以选用例如沉积法。例如，物理气相沉积法。\n\n[0096]在其中一个具体示例中，沉积制备顶电极140，以覆盖整面基板110。\n\n[0097]顶电极140的具体材料可以根据该电致发光器件是顶发射结构或底发射结构进行选取，具体地，可以参照上述电致发光器件中的顶电极140的材料选取。\n\n[0098]进一步地，本发明的一个实施例还提供了一种显示器件，其包括驱动元件和根据上述实施例的电致发光器件，驱动元件与电致发光器件电连接，用于驱动电致发光器件的发光。\n\n[0099]上述实施例提供的电致发光器件的制备方法通过采用将预制备的蓝光Micro-LED功能主体转移到用于制备量子点发光二极管的基板110上的方法，以克服Micro-LED和量子点发光二极管的制程之间存在显著差异的问题。本发明上述实施例提供的电致发光器件，选用垂直结构的蓝光Micro-LED功能主体替代蓝色量子点发光二极管，避免了传统的蓝色量子点发光二极管低效率和低寿命的缺点。该电致发光器件具有蓝光Micro-LED功能主体的高效率和长寿命的优势，以充分利用红色、绿色量子点发光二极管高色纯度的优点，实现了低成本、高效率、高稳定性的全色量子点发光显示器件，能够促进红色、绿色量子点发光二极管的商业化应用。\n\n[0100]以上实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。\n\n[0101]以上实施例仅表达了本发明的一种较佳的实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10996, 24050, '技术领域\n\n[0001]本发明涉及显示技术领域，特别是涉及一种显示器件及其制作方法。\n\n背景技术\n\n[0002]在信息社会的当代，作为可视信息传输媒介的显示器件的重要性在进一步加强。目前，显示器件正朝着更轻、更薄、更低能耗、更低成本以及更好图像质量的趋势发展。\n\n[0003]量子点发光二极管(QLED)由于其具有自发光、反应快、视角广、亮度高、轻薄等优点，成为目前显示器件研究的主要方向之一。目前，红色和绿色QLED 无论是在效率还是寿命上都已经接近商业化需求，但蓝色QLED在效率、寿命上仍有欠缺，且其进步较为缓慢，影响了全彩QLED的量产进展。\n\n发明内容\n\n[0004]基于此，有必要提供一种显示器件及其制作方法，以提高显示器件的寿命和效率。\n\n[0005]本发明的其中一个目的是提供一种显示器件，方案如下：\n\n[0006]一种显示器件，包括基板以及设置在所述基板上的红色子像素、绿色子像素以及蓝色子像素，所述红色子像素和所述绿色子像素均为QLED，所述蓝色子像素为Micro-LED(微型LED)。\n\n[0007]在其中一个实施例中，所述显示器件还包括剥离辅助层，所述剥离辅助层设置在所述基板上，所述剥离辅助层具有第一开口，所述蓝色子像素设置在所述第一开口中，所述第一开口的侧壁抵接于所述蓝色子像素。\n\n[0008]在其中一个实施例中，所述第一开口的侧壁弹性抵接于所述蓝色子像素。\n\n[0009]在其中一个实施例中，随远离所述基板，所述第一开口逐渐收窄。\n\n[0010]在其中一个实施例中，所述第一开口的侧壁远离所述基板的一端抵接于所述蓝色子像素。\n\n[0011]在其中一个实施例中，所述剥离辅助层的高度和所述蓝色子像素的高度相差不大于50nm。\n\n[0012]在其中一个实施例中，所述剥离辅助层的材料为弹性材料。\n\n[0013]在其中一个实施例中，所述显示器件还包括像素界定层，所述像素界定层设置在所述基板上，所述像素界定层具有露出所述红色子像素的第二开口以及露出所述绿色子像素的第三开口。\n\n[0014]在其中一个实施例中，所述像素界定层覆盖所述剥离辅助层，所述像素界定层还具有第四开口，所述第四开口与所述剥离辅助层的第一开口连通，以露出所述蓝色子像素。\n\n[0015]在其中一个实施例中，所述第四开口完全露出所述第一开口远离所述基板的一端。\n\n[0016]在其中一个实施例中，随靠近所述基板，所述第四开口逐渐收窄。\n\n[0017]在其中一个实施例中，所述第四开口靠近所述基板的一端与所述第一开口远离所述基板的一端吻合对接且尺寸和形状一致。\n\n[0018]在其中一个实施例中，所述蓝色子像素为垂直结构型Micro-LED。\n\n[0019]本发明的另一个目的是提供一种显示器件的制作方法，方案如下：\n\n[0020]一种显示器件的制作方法，包括以下步骤：\n\n[0021]提供基板；\n\n[0022]在所述基板上制作红色子像素、绿色子像素以及蓝色子像素，所述红色子像素和所述绿色子像素均为QLED，所述蓝色子像素为Micro-LED。\n\n[0023]在其中一个实施例中，在制作所述蓝色子像素之前，还包括以下步骤：\n\n[0024]在所述基板上制作剥离辅助层，所述剥离辅助层具有第一开口，所述第一开口的最小口径小于所述蓝色子像素的横截面尺寸；\n\n[0025]在制作所述蓝色子像素时，通过转印工艺将所述蓝色子像素转移至所述第一开口中并设置在所述基板上，所述第一开口的侧壁抵接于所述蓝色子像素。\n\n[0026]在其中一个实施例中，所述第一开口的最小口径与所述蓝色子像素的横截面尺寸相差不超过2μm。\n\n[0027]在其中一个实施例中，在制作所述剥离辅助层之后，且在制作所述蓝色子像素之前，还包括以下步骤：\n\n[0028]在所述基板上制作像素界定层，所述像素界定层覆盖所述剥离辅助层，所述像素界定层具有第二开口、第三开口以及第四开口，所述第二开口限定出所述红色子像素的发光区域，所述第三开口限定出所述绿色子像素的发光区域，所述第四开口与所述剥离辅助层的第一开口连通；\n\n[0029]在制作所述蓝色子像素时，将所述蓝色子像素经由所述第四开口和所述第一开口转移至所述基板上。\n\n[0030]与现有方案相比，上述显示器件及其制作方法具有以下有益效果：\n\n[0031]目前，对于QLED来说，红色和绿色QLED的效率和寿命较佳，而蓝色QLED 较差。对于Micro-LED来说，虽然其具有高效率和高稳定性等优点，但制作成本较高，而且红色和绿色Micro-LED随着芯片尺寸的减小，效率会大幅下降。上述显示器件将蓝色Micro-LED、红色QLED和绿色QLED集成于同一显示器件中，解决了蓝色QLED效率和寿命较差的问题，提高了显示器件的效率和寿命。由于仅蓝色子像素采用Micro-LED，因此可以大幅降低Micro-LED的转移制作成本，同时由于蓝色Micro-LED相比于红绿Micro-LED，其器件效率随芯片尺寸减小下降幅度最小，因此上述显示器件各取所长，扬长避短，使显示器件兼具效率、寿命和成本等方面的优势。\n\n附图说明\n\n[0032]图1为一实施例的显示器件的结构示意图；\n\n[0033]图2为采用转印工艺将蓝色子像素转移至基板上的示意图；\n\n[0034]图3为图1所示显示器件中蓝色子像素与基板、像素电极、剥离辅助层以及像素界定层的连接关系图；\n\n[0035]图4为在基板上制作像素电极的示意图；\n\n[0036]图5为在基板上制作剥离辅助层的示意图；\n\n[0037]图6为在基板上制作像素界定层的示意图；\n\n[0038]图7为在剥离辅助层的第一开口中设置蓝色子像素的示意图；\n\n[0039]图8为在像素界定层的第二开口、第三开口中制作红色子像素和绿色子像素的示意图。\n\n具体实施方式\n\n[0040]为了便于理解本发明，下面将参照相关附图对本发明进行更全面的描述。附图中给出了本发明的较佳实施例。但是，本发明可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本发明的公开内容的理解更加透彻全面。\n\n[0041]需要说明的是，当元件被称为“设置于”另一个元件，它可以直接在另一个元件上或者也可以存在居中的元件。当一个元件被认为是“连接”另一个元件，它可以是直接连接到另一个元件或者可能同时存在居中元件。本文所使用的术语“垂直的”、“水平的”、“左”、“右”以及类似的表述只是为了说明的目的，并不表示是唯一的实施方式。\n\n[0042]在本发明的描述中，需要理解的是，术语“第一”、“第二”等仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量或顺序。\n\n[0043]除非另有定义，本文所使用的所有的技术和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同。本文中在本发明的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本发明。本文所使用的术语“和/或”包括一个或多个相关的所列项目的任意的和所有的组合。\n\n[0044]请参考图1所示，本发明一实施例的显示器件100包括基板110以及设置在基板110上的红色子像素120、绿色子像素130以及蓝色子像素140。其中，红色子像素120和绿色子像素130均为QLED，蓝色子像素140为Micro-LED (微型LED)。\n\n[0045]目前，对于QLED来说，红色和绿色QLED的效率和寿命较佳，而蓝色QLED 较差。对于Micro-LED来说，虽然其具有高效率和高稳定性等优点，但制作成本较高，而且红色和绿色Micro-LED随着芯片尺寸的减小，效率会大幅下降。上述显示器件将蓝色Micro-LED、红色QLED和绿色QLED集成于同一显示器件中，解决了蓝色QLED效率和寿命较差的问题，提高了显示器件的效率和寿命。由于仅蓝色子像素采用Micro-LED，因此可以大幅降低Micro-LED的转移制作成本，同时由于蓝色Micro-LED相比于红绿Micro-LED，其器件效率随芯片尺寸减小下降幅度最小，因此上述显示器件各取所长，扬长避短，兼具效率、寿命和成本等方面的优势。\n\n[0046]基板110可以是刚性基板，如玻璃等，也可以是柔性基板，如聚酰亚胺(PI) 等。\n\n[0047]可以理解，基板110上设有驱动TFT，驱动TFT用于驱动各子像素发光。驱动TFT可以是但不限于金属氧化物TFT、LTPS TFT或LTPO TFT等。\n\n[0048]在其中一个示例中，基板110上设置有像素电极150，各子像素设置在像素电极150上。\n\n[0049]像素电极150为透明电极或反射电极。若显示器件100为底发射型，则像素电极150为透明电极，如ITO、IZO等导电无机金属氧化物，或导电银纳米线、碳纳米管等。若显示器件100为顶发射型，则像素电极150为反射电极，可以是金属、金属合金或导电金属氧化物和金属的叠层导电膜层结构，如Al、Ag或它们的合金，或ITO/Ag/ITO等叠层导电膜层结构等。\n\n[0050]在其中一个示例中，红色子像素120和绿色子像素130的顶电极180与蓝色子像素140远离基板110的一侧连接。在图1所示的具体示例中，红色子像素120和绿色子像素130的顶电极180为共同电极，其延伸覆盖在蓝色子像素 140远离基板110的一侧表面上。\n\n[0051]顶电极180为透明电极或反射电极。若显示器件100为底发射型，则顶电极180为反射电极，可以是金属、金属合金，如Al、Ag或它们的合金；如ITO、 IZO等导电无机金属氧化物，或导电银纳米线、碳纳米管等。若显示器件100 为顶发射型，则顶电极180为透明电极，可以是薄层金属或金属合金，如Al、 Ag或它们的合金，也可以是导电金属氧化物，如ITO、IZO等导电无机金属氧化物等。\n\n[0052]蓝色子像素140可采用转印工艺制作。请结合图2和图3所示，通过转移母版210上的转印头220携带蓝色子像素140，将蓝色子像素140经由第一开口 161转移至基板110上。\n\n[0053]如图1所示，在其中一个示例中，显示器件100还包括剥离辅助层160，剥离辅助层160设置在基板110上，剥离辅助层160具有第一开口161，蓝色子像素140设置在第一开口161中，第一开口161的侧壁抵接于蓝色子像素140。\n\n[0054]上述示例的显示器件100在基板110上设置剥离辅助层160，蓝色子像素 140设置在剥离辅助层160的第一开口161中，在显示器件100的制作过程中，先在基板110上形成剥离辅助层160，再通过转印工艺将蓝色子像素140转移至第一开口161中。在转移蓝色子像素140之前，由于第一开口161的最小口径小于蓝色子像素140的横截面尺寸，转移时，第一开口161的侧壁抵接于蓝色子像素140，在蓝色子像素140与转印头220的剥离过程中，第一开口161的侧壁对蓝色子像素140形成一定的阻力，可以提升蓝色子像素140的剥离良率。\n\n[0055]较优地，第一开口161的最小口径与蓝色子像素140的横截面尺寸相差不超过2μm。如果该相差尺寸过大，可能会使得蓝色子像素140无法转移至基板 110上，造成蓝色子像素140与基板110接触不良。\n\n[0056]在其中一个示例中，随远离基板110，第一开口161逐渐收窄。如此，在蓝色子像素140转移至基板110的过程中，提高剥离辅助层160的形变空间同时减小相应的摩擦力，防止蓝色子像素140与基板110接触不良。\n\n[0057]在图1所示的具体示例中，第一开口161为梯形开口。\n\n[0058]在其中一个示例中，第一开口161的侧壁弹性抵接于蓝色子像素140。\n\n[0059]在图1所示的具体示例中，第一开口161的侧壁远离基板110的一端抵接于蓝色子像素140。\n\n[0060]在其中一个示例中，剥离辅助层160的材料为弹性材料。\n\n[0061]在其中一个示例中，剥离辅助层160的材料为有机材料，如本领域常用的光刻胶等，有机材料具有一定粘弹性，防止转移蓝色子像素140时对剥离辅助层160造成损伤。\n\n[0062]在其中一个示例中，剥离辅助层160的材料为负性光刻胶，便于形成上述梯形开口。\n\n[0063]在其中一个示例中，剥离辅助层160的高度和蓝色子像素140的高度相差不大于50nm，避免QLED的顶电极180与蓝色Micro-LED顶电极180之间形成断路，不能形成电连接。\n\n[0064]进一步地，在其中一个示例中，剥离辅助层160的高度和蓝色子像素140 的高度相差不大于5nm。\n\n[0065]进一步地，在其中一个示例中，剥离辅助层160的高度和蓝色子像素140 的高度相同。即剥离辅助层160和蓝色子像素140远离基板110的一侧表面齐平。\n\n[0066]在其中一个示例中，显示器件100还包括像素界定层170，像素界定层170 设置在基板110上，像素界定层170具有露出红色子像素120的第二开口171 以及露出绿色子像素130的第三开口172。\n\n[0067]像素界定层170的材料可以是但不限于光阻材料。\n\n[0068]在其中一个示例中，像素界定层170覆盖剥离辅助层160。像素界定层170 还具有第四开口173，第四开口173与剥离辅助层160的第一开口161连通，以露出蓝色子像素140。在转印蓝色子像素140时，可以在制作完剥离辅助层160 和像素界定层170之后，经由第四开口173和第一开口161将蓝色子像素140 转移至基板110上。\n\n[0069]可以理解，在其他示例中，像素界定层170也可以不覆盖剥离辅助层160。\n\n[0070]在其中一个示例中，像素界定层170的第四开口173完全露出剥离辅助层 160的第一开口161远离基板110的一端。即剥离辅助层160的第一开口161不被像素界定层170的第四开口173所遮挡，蓝色子像素140可以顺利转移至第一开口161中。\n\n[0071]在其中一个示例中，随靠近基板110，第四开口173逐渐收窄。第四开口 173在蓝色子像素140的转移过程中，可以自动校准位置，可到导向的作用，使得蓝色子像素140通过上端斜坡精确移至剥离辅助层160的第一开口161中，提高转印精度。\n\n[0072]在图1所示的具体示例中，第四开口173靠近基板110的一端与第一开口 161远离基板110的一端吻合对接且尺寸和形状一致。\n\n[0073]在图1所示的具体示例中，第四开口173和第一开口161形成一个“上宽、中窄、下宽”的通道结构。请结合图2和图3所示，制作蓝色子像素140时，通过转移母版210上的转印头220携带蓝色子像素140，将蓝色子像素140经由第四开口173和第一开口161转移至基板110上。“上宽”的第四开口173在蓝色子像素140的转移过程中，可以自动校准位置，可到导向的作用，使得蓝色子像素140通过上端斜坡精确移至剥离辅助层160的第一开口161中，提高转印精度；“中窄”结构可以在蓝色子像素140转移至基板110上的过程中，转印头220 提起时，剥离辅助层160对蓝色子像素140形成轻微挤压，从而在侧面形成较大的摩檫力，提升蓝色子像素140的剥离良率；“下宽”的第一开口161可以防止因剥离辅助层160开口尺寸小于蓝色子像素140，在蓝色子像素140转移至基板 110的过程中，提高剥离辅助层160的形变空间同时减小相应的摩擦力，防止蓝色子像素140与基板110接触不良。\n\n[0074]在其中一个示例中，蓝色子像素140为垂直结构型Micro-LED。垂直结构型Micro-LED的结构与QLED的结构类似，有利于集成到现有的QLED显示面板结构中，不需要对面板结构进行大幅改动，降低了制作难度和制作成本。\n\n[0075]进一步地，本发明还提供一种上述任一示例的显示器件100的制作方法。该制作方法包括以下步骤：\n\n[0076]提供基板110；\n\n[0077]在基板110上制作红色子像素120、绿色子像素130以及蓝色子像素140，红色子像素120和绿色子像素130均为QLED，蓝色子像素140为Micro-LED。\n\n[0078]在其中一个示例中，在制作蓝色子像素140之前，还包括以下步骤：\n\n[0079]在基板110上制作剥离辅助层160，剥离辅助层160具有第一开口161，第一开口161的最小口径小于蓝色子像素140的横截面尺寸；\n\n[0080]在制作蓝色子像素140时，通过转印工艺将蓝色子像素140转移至第一开口161中并设置在基板110上，第一开口161的侧壁抵接于蓝色子像素140。\n\n[0081]在其中一个示例中，第一开口161的最小口径小于蓝色子像素140的横截面尺寸不超过2μm。\n\n[0082]在其中一个示例中，在制作剥离辅助层160之后，且在制作蓝色子像素140 之前，还包括以下步骤：\n\n[0083]在基板110上制作像素界定层170，像素界定层170覆盖剥离辅助层160，像素界定层170具有第二开口171、第三开口172以及第四开口173，第二开口 171限定出红色子像素120的发光区域，第三开口172限定出绿色子像素130的发光区域，第四开口173与剥离辅助层160的第一开口161连通；\n\n[0084]在制作蓝色子像素140时，将蓝色子像素140经由第四开口173和第一开口161转移至基板110上。\n\n[0085]下面提供具体实施例对本发明进行说明，但本发明并不局限于下述示例，应当理解，所附权利要求概括了本发明的范围在本发明构思的引导下本领域的技术人员应意识到，对本发明的各示例所进行的一定的改变，都将被本发明的权利要求书的精神和范围所覆盖。\n\n[0086]实施例1\n\n[0087]本实施例提供一种显示器件100。\n\n[0088]请参照图1所示，本实施例的显示器件100包括基板110、像素电极150、剥离辅助层160、像素界定层170、红色子像素120、绿色子像素130、蓝色子像素140以及顶电极180。其中，红色子像素120和绿色子像素130均为QLED，蓝色子像素140为Micro-LED。\n\n[0089]像素电极150设置在基板110上。剥离辅助层160设置在基板110上。剥离辅助层160为负性光刻胶。剥离辅助层160具有第一开口161，蓝色子像素 140设置在第一开口161中并与像素电极150连接。剥离辅助层160的高度和蓝色子像素140的高度相同。随远离基板110，第一开口161逐渐收窄，第一开口 161的侧壁远离基板110的一端弹性抵接于蓝色子像素140。\n\n[0090]像素界定层170设置在基板110上，像素界定层170具有第二开口171、第三开口172以及第四开口173。红色子像素120设置在第二开口171中，绿色子像素130设置在第三开口172中。像素界定层170覆盖在剥离辅助层160上。第四开口173与第一开口161连通，随靠近基板110，第四开口173逐渐收窄。第四开口173与剥离辅助层160的第一开口161连通第四开口173靠近基板110 的一端与第一开口161远离基板110的一端吻合对接且尺寸和形状一致。\n\n[0091]顶电极180为共同电极，从红色子像素120和绿色子像素130上延伸覆盖在蓝色子像素140上。\n\n[0092]实施例2\n\n[0093]本实施例提供一种显示器件的制作方法。本实施例中，步骤之间以及具体步骤中前后操作之间可能省略了一些显示器件制作的常规工艺，本领域技术人员在制作过程中可按实际需求增添工艺步骤。\n\n[0094]请参照图4至图8所示，本实施例的显示器件100的制作方法包括以下步骤：\n\n[0095]步骤1，提供基板110。\n\n[0096]步骤2，如图4所示，在基板110上制作像素电极150。\n\n[0097]步骤4，如图5所示，在基板110上采用负性光刻胶制作剥离辅助层160，对负性光刻胶进行曝光显影，形成第一开口161。随远离基板110，第一开口161 逐渐收窄。\n\n[0098]步骤5，如图6所示，在基板110上采用光阻材料制作像素界定层170，对像素界定层170进行曝光显影，形成第二开口171、第三开口172以及第四开口 173。第四开口173与第一开口161连通，随靠近基板110，第四开口173逐渐收窄。第四开口173与剥离辅助层160的第一开口161连通第四开口173靠近基板110的一端与第一开口161远离基板110的一端正好重合。第四开口173 和第一开口161形成一个“上宽、中窄、下宽”的通道结构。\n\n[0099]步骤6，如图7所示，通过转印工艺将蓝色子像素140经由第四开口173和第一开口161转移至基板110上的像素电极150上。转印头220提起时，剥离辅助层160对蓝色子像素140形成轻微挤压，从而在侧面形成较大的摩檫力，提升蓝色子像素140的剥离良率。\n\n[0100]步骤7，如图8所示，在第二开口171和第三开口172中的上述像素电极 150上沉积空穴注入层、空穴传输层、量子点发光层和电子传输层等层，形成红色子像素120和绿色子像素130。\n\n[0101]步骤8，整面沉积顶电极180，形成顶部共同电极，使得各子像素连接到驱动电路上，形成完整的器件以及驱动电流回路，得到如图1所示的显示器件100。\n\n[0102]上述显示器件100将蓝色Micro-LED、红色QLED和绿色QLED集成于同一显示器件中，解决了蓝色QLED效率和寿命较差的问题，提高了显示器件的效率和寿命。由于仅蓝色子像素采用Micro-LED，因此可以大幅降低Micro-LED 的转移制作成本，同时由于蓝色Micro-LED相比于红绿Micro-LED，其器件效率随芯片尺寸减小下降幅度最小，因此上述显示器件100各取所长，扬长避短，兼具效率、寿命和成本等方面的优势。\n\n[0103]以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。\n\n[0104]以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。', '技术领域\n\n[0001]本发明涉及显示技术领域，特别是涉及一种显示器件及其制作方法。\n\n背景技术\n\n[0002]在信息社会的当代，作为可视信息传输媒介的显示器件的重要性在进一步加强。目前，显示器件正朝着更轻、更薄、更低能耗、更低成本以及更好图像质量的趋势发展。\n\n[0003]量子点发光二极管(QLED)由于其具有自发光、反应快、视角广、亮度高、轻薄等优点，成为目前显示器件研究的主要方向之一。目前，红色和绿色QLED 无论是在效率还是寿命上都已经接近商业化需求，但蓝色QLED在效率、寿命上仍有欠缺，且其进步较为缓慢，影响了全彩QLED的量产进展。\n\n发明内容\n\n[0004]基于此，有必要提供一种显示器件及其制作方法，以提高显示器件的寿命和效率。\n\n[0005]本发明的其中一个目的是提供一种显示器件，方案如下：\n\n[0006]一种显示器件，包括基板以及设置在所述基板上的红色子像素、绿色子像素以及蓝色子像素，所述红色子像素和所述绿色子像素均为QLED，所述蓝色子像素为Micro-LED(微型LED)。\n\n[0007]在其中一个实施例中，所述显示器件还包括剥离辅助层，所述剥离辅助层设置在所述基板上，所述剥离辅助层具有第一开口，所述蓝色子像素设置在所述第一开口中，所述第一开口的侧壁抵接于所述蓝色子像素。\n\n[0008]在其中一个实施例中，所述第一开口的侧壁弹性抵接于所述蓝色子像素。\n\n[0009]在其中一个实施例中，随远离所述基板，所述第一开口逐渐收窄。\n\n[0010]在其中一个实施例中，所述第一开口的侧壁远离所述基板的一端抵接于所述蓝色子像素。\n\n[0011]在其中一个实施例中，所述剥离辅助层的高度和所述蓝色子像素的高度相差不大于50nm。\n\n[0012]在其中一个实施例中，所述剥离辅助层的材料为弹性材料。\n\n[0013]在其中一个实施例中，所述显示器件还包括像素界定层，所述像素界定层设置在所述基板上，所述像素界定层具有露出所述红色子像素的第二开口以及露出所述绿色子像素的第三开口。\n\n[0014]在其中一个实施例中，所述像素界定层覆盖所述剥离辅助层，所述像素界定层还具有第四开口，所述第四开口与所述剥离辅助层的第一开口连通，以露出所述蓝色子像素。\n\n[0015]在其中一个实施例中，所述第四开口完全露出所述第一开口远离所述基板的一端。\n\n[0016]在其中一个实施例中，随靠近所述基板，所述第四开口逐渐收窄。\n\n[0017]在其中一个实施例中，所述第四开口靠近所述基板的一端与所述第一开口远离所述基板的一端吻合对接且尺寸和形状一致。\n\n[0018]在其中一个实施例中，所述蓝色子像素为垂直结构型Micro-LED。\n\n[0019]本发明的另一个目的是提供一种显示器件的制作方法，方案如下：\n\n[0020]一种显示器件的制作方法，包括以下步骤：\n\n[0021]提供基板；\n\n[0022]在所述基板上制作红色子像素、绿色子像素以及蓝色子像素，所述红色子像素和所述绿色子像素均为QLED，所述蓝色子像素为Micro-LED。\n\n[0023]在其中一个实施例中，在制作所述蓝色子像素之前，还包括以下步骤：\n\n[0024]在所述基板上制作剥离辅助层，所述剥离辅助层具有第一开口，所述第一开口的最小口径小于所述蓝色子像素的横截面尺寸；\n\n[0025]在制作所述蓝色子像素时，通过转印工艺将所述蓝色子像素转移至所述第一开口中并设置在所述基板上，所述第一开口的侧壁抵接于所述蓝色子像素。\n\n[0026]在其中一个实施例中，所述第一开口的最小口径与所述蓝色子像素的横截面尺寸相差不超过2μm。\n\n[0027]在其中一个实施例中，在制作所述剥离辅助层之后，且在制作所述蓝色子像素之前，还包括以下步骤：\n\n[0028]在所述基板上制作像素界定层，所述像素界定层覆盖所述剥离辅助层，所述像素界定层具有第二开口、第三开口以及第四开口，所述第二开口限定出所述红色子像素的发光区域，所述第三开口限定出所述绿色子像素的发光区域，所述第四开口与所述剥离辅助层的第一开口连通；\n\n[0029]在制作所述蓝色子像素时，将所述蓝色子像素经由所述第四开口和所述第一开口转移至所述基板上。\n\n[0030]与现有方案相比，上述显示器件及其制作方法具有以下有益效果：\n\n[0031]目前，对于QLED来说，红色和绿色QLED的效率和寿命较佳，而蓝色QLED 较差。对于Micro-LED来说，虽然其具有高效率和高稳定性等优点，但制作成本较高，而且红色和绿色Micro-LED随着芯片尺寸的减小，效率会大幅下降。上述显示器件将蓝色Micro-LED、红色QLED和绿色QLED集成于同一显示器件中，解决了蓝色QLED效率和寿命较差的问题，提高了显示器件的效率和寿命。由于仅蓝色子像素采用Micro-LED，因此可以大幅降低Micro-LED的转移制作成本，同时由于蓝色Micro-LED相比于红绿Micro-LED，其器件效率随芯片尺寸减小下降幅度最小，因此上述显示器件各取所长，扬长避短，使显示器件兼具效率、寿命和成本等方面的优势。\n\n附图说明\n\n[0032]图1为一实施例的显示器件的结构示意图；\n\n[0033]图2为采用转印工艺将蓝色子像素转移至基板上的示意图；\n\n[0034]图3为图1所示显示器件中蓝色子像素与基板、像素电极、剥离辅助层以及像素界定层的连接关系图；\n\n[0035]图4为在基板上制作像素电极的示意图；\n\n[0036]图5为在基板上制作剥离辅助层的示意图；\n\n[0037]图6为在基板上制作像素界定层的示意图；\n\n[0038]图7为在剥离辅助层的第一开口中设置蓝色子像素的示意图；\n\n[0039]图8为在像素界定层的第二开口、第三开口中制作红色子像素和绿色子像素的示意图。\n\n具体实施方式\n\n[0040]为了便于理解本发明，下面将参照相关附图对本发明进行更全面的描述。附图中给出了本发明的较佳实施例。但是，本发明可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本发明的公开内容的理解更加透彻全面。\n\n[0041]需要说明的是，当元件被称为“设置于”另一个元件，它可以直接在另一个元件上或者也可以存在居中的元件。当一个元件被认为是“连接”另一个元件，它可以是直接连接到另一个元件或者可能同时存在居中元件。本文所使用的术语“垂直的”、“水平的”、“左”、“右”以及类似的表述只是为了说明的目的，并不表示是唯一的实施方式。\n\n[0042]在本发明的描述中，需要理解的是，术语“第一”、“第二”等仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量或顺序。\n\n[0043]除非另有定义，本文所使用的所有的技术和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同。本文中在本发明的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本发明。本文所使用的术语“和/或”包括一个或多个相关的所列项目的任意的和所有的组合。\n\n[0044]请参考图1所示，本发明一实施例的显示器件100包括基板110以及设置在基板110上的红色子像素120、绿色子像素130以及蓝色子像素140。其中，红色子像素120和绿色子像素130均为QLED，蓝色子像素140为Micro-LED (微型LED)。\n\n[0045]目前，对于QLED来说，红色和绿色QLED的效率和寿命较佳，而蓝色QLED 较差。对于Micro-LED来说，虽然其具有高效率和高稳定性等优点，但制作成本较高，而且红色和绿色Micro-LED随着芯片尺寸的减小，效率会大幅下降。上述显示器件将蓝色Micro-LED、红色QLED和绿色QLED集成于同一显示器件中，解决了蓝色QLED效率和寿命较差的问题，提高了显示器件的效率和寿命。由于仅蓝色子像素采用Micro-LED，因此可以大幅降低Micro-LED的转移制作成本，同时由于蓝色Micro-LED相比于红绿Micro-LED，其器件效率随芯片尺寸减小下降幅度最小，因此上述显示器件各取所长，扬长避短，兼具效率、寿命和成本等方面的优势。\n\n[0046]基板110可以是刚性基板，如玻璃等，也可以是柔性基板，如聚酰亚胺(PI) 等。\n\n[0047]可以理解，基板110上设有驱动TFT，驱动TFT用于驱动各子像素发光。驱动TFT可以是但不限于金属氧化物TFT、LTPS TFT或LTPO TFT等。\n\n[0048]在其中一个示例中，基板110上设置有像素电极150，各子像素设置在像素电极150上。\n\n[0049]像素电极150为透明电极或反射电极。若显示器件100为底发射型，则像素电极150为透明电极，如ITO、IZO等导电无机金属氧化物，或导电银纳米线、碳纳米管等。若显示器件100为顶发射型，则像素电极150为反射电极，可以是金属、金属合金或导电金属氧化物和金属的叠层导电膜层结构，如Al、Ag或它们的合金，或ITO/Ag/ITO等叠层导电膜层结构等。\n\n[0050]在其中一个示例中，红色子像素120和绿色子像素130的顶电极180与蓝色子像素140远离基板110的一侧连接。在图1所示的具体示例中，红色子像素120和绿色子像素130的顶电极180为共同电极，其延伸覆盖在蓝色子像素 140远离基板110的一侧表面上。\n\n[0051]顶电极180为透明电极或反射电极。若显示器件100为底发射型，则顶电极180为反射电极，可以是金属、金属合金，如Al、Ag或它们的合金；如ITO、 IZO等导电无机金属氧化物，或导电银纳米线、碳纳米管等。若显示器件100 为顶发射型，则顶电极180为透明电极，可以是薄层金属或金属合金，如Al、 Ag或它们的合金，也可以是导电金属氧化物，如ITO、IZO等导电无机金属氧化物等。\n\n[0052]蓝色子像素140可采用转印工艺制作。请结合图2和图3所示，通过转移母版210上的转印头220携带蓝色子像素140，将蓝色子像素140经由第一开口 161转移至基板110上。\n\n[0053]如图1所示，在其中一个示例中，显示器件100还包括剥离辅助层160，剥离辅助层160设置在基板110上，剥离辅助层160具有第一开口161，蓝色子像素140设置在第一开口161中，第一开口161的侧壁抵接于蓝色子像素140。\n\n[0054]上述示例的显示器件100在基板110上设置剥离辅助层160，蓝色子像素 140设置在剥离辅助层160的第一开口161中，在显示器件100的制作过程中，先在基板110上形成剥离辅助层160，再通过转印工艺将蓝色子像素140转移至第一开口161中。在转移蓝色子像素140之前，由于第一开口161的最小口径小于蓝色子像素140的横截面尺寸，转移时，第一开口161的侧壁抵接于蓝色子像素140，在蓝色子像素140与转印头220的剥离过程中，第一开口161的侧壁对蓝色子像素140形成一定的阻力，可以提升蓝色子像素140的剥离良率。\n\n[0055]较优地，第一开口161的最小口径与蓝色子像素140的横截面尺寸相差不超过2μm。如果该相差尺寸过大，可能会使得蓝色子像素140无法转移至基板 110上，造成蓝色子像素140与基板110接触不良。\n\n[0056]在其中一个示例中，随远离基板110，第一开口161逐渐收窄。如此，在蓝色子像素140转移至基板110的过程中，提高剥离辅助层160的形变空间同时减小相应的摩擦力，防止蓝色子像素140与基板110接触不良。\n\n[0057]在图1所示的具体示例中，第一开口161为梯形开口。\n\n[0058]在其中一个示例中，第一开口161的侧壁弹性抵接于蓝色子像素140。\n\n[0059]在图1所示的具体示例中，第一开口161的侧壁远离基板110的一端抵接于蓝色子像素140。\n\n[0060]在其中一个示例中，剥离辅助层160的材料为弹性材料。\n\n[0061]在其中一个示例中，剥离辅助层160的材料为有机材料，如本领域常用的光刻胶等，有机材料具有一定粘弹性，防止转移蓝色子像素140时对剥离辅助层160造成损伤。\n\n[0062]在其中一个示例中，剥离辅助层160的材料为负性光刻胶，便于形成上述梯形开口。\n\n[0063]在其中一个示例中，剥离辅助层160的高度和蓝色子像素140的高度相差不大于50nm，避免QLED的顶电极180与蓝色Micro-LED顶电极180之间形成断路，不能形成电连接。\n\n[0064]进一步地，在其中一个示例中，剥离辅助层160的高度和蓝色子像素140 的高度相差不大于5nm。\n\n[0065]进一步地，在其中一个示例中，剥离辅助层160的高度和蓝色子像素140 的高度相同。即剥离辅助层160和蓝色子像素140远离基板110的一侧表面齐平。\n\n[0066]在其中一个示例中，显示器件100还包括像素界定层170，像素界定层170 设置在基板110上，像素界定层170具有露出红色子像素120的第二开口171 以及露出绿色子像素130的第三开口172。\n\n[0067]像素界定层170的材料可以是但不限于光阻材料。\n\n[0068]在其中一个示例中，像素界定层170覆盖剥离辅助层160。像素界定层170 还具有第四开口173，第四开口173与剥离辅助层160的第一开口161连通，以露出蓝色子像素140。在转印蓝色子像素140时，可以在制作完剥离辅助层160 和像素界定层170之后，经由第四开口173和第一开口161将蓝色子像素140 转移至基板110上。\n\n[0069]可以理解，在其他示例中，像素界定层170也可以不覆盖剥离辅助层160。\n\n[0070]在其中一个示例中，像素界定层170的第四开口173完全露出剥离辅助层 160的第一开口161远离基板110的一端。即剥离辅助层160的第一开口161不被像素界定层170的第四开口173所遮挡，蓝色子像素140可以顺利转移至第一开口161中。\n\n[0071]在其中一个示例中，随靠近基板110，第四开口173逐渐收窄。第四开口 173在蓝色子像素140的转移过程中，可以自动校准位置，可到导向的作用，使得蓝色子像素140通过上端斜坡精确移至剥离辅助层160的第一开口161中，提高转印精度。\n\n[0072]在图1所示的具体示例中，第四开口173靠近基板110的一端与第一开口 161远离基板110的一端吻合对接且尺寸和形状一致。\n\n[0073]在图1所示的具体示例中，第四开口173和第一开口161形成一个“上宽、中窄、下宽”的通道结构。请结合图2和图3所示，制作蓝色子像素140时，通过转移母版210上的转印头220携带蓝色子像素140，将蓝色子像素140经由第四开口173和第一开口161转移至基板110上。“上宽”的第四开口173在蓝色子像素140的转移过程中，可以自动校准位置，可到导向的作用，使得蓝色子像素140通过上端斜坡精确移至剥离辅助层160的第一开口161中，提高转印精度；“中窄”结构可以在蓝色子像素140转移至基板110上的过程中，转印头220 提起时，剥离辅助层160对蓝色子像素140形成轻微挤压，从而在侧面形成较大的摩檫力，提升蓝色子像素140的剥离良率；“下宽”的第一开口161可以防止因剥离辅助层160开口尺寸小于蓝色子像素140，在蓝色子像素140转移至基板 110的过程中，提高剥离辅助层160的形变空间同时减小相应的摩擦力，防止蓝色子像素140与基板110接触不良。\n\n[0074]在其中一个示例中，蓝色子像素140为垂直结构型Micro-LED。垂直结构型Micro-LED的结构与QLED的结构类似，有利于集成到现有的QLED显示面板结构中，不需要对面板结构进行大幅改动，降低了制作难度和制作成本。\n\n[0075]进一步地，本发明还提供一种上述任一示例的显示器件100的制作方法。该制作方法包括以下步骤：\n\n[0076]提供基板110；\n\n[0077]在基板110上制作红色子像素120、绿色子像素130以及蓝色子像素140，红色子像素120和绿色子像素130均为QLED，蓝色子像素140为Micro-LED。\n\n[0078]在其中一个示例中，在制作蓝色子像素140之前，还包括以下步骤：\n\n[0079]在基板110上制作剥离辅助层160，剥离辅助层160具有第一开口161，第一开口161的最小口径小于蓝色子像素140的横截面尺寸；\n\n[0080]在制作蓝色子像素140时，通过转印工艺将蓝色子像素140转移至第一开口161中并设置在基板110上，第一开口161的侧壁抵接于蓝色子像素140。\n\n[0081]在其中一个示例中，第一开口161的最小口径小于蓝色子像素140的横截面尺寸不超过2μm。\n\n[0082]在其中一个示例中，在制作剥离辅助层160之后，且在制作蓝色子像素140 之前，还包括以下步骤：\n\n[0083]在基板110上制作像素界定层170，像素界定层170覆盖剥离辅助层160，像素界定层170具有第二开口171、第三开口172以及第四开口173，第二开口 171限定出红色子像素120的发光区域，第三开口172限定出绿色子像素130的发光区域，第四开口173与剥离辅助层160的第一开口161连通；\n\n[0084]在制作蓝色子像素140时，将蓝色子像素140经由第四开口173和第一开口161转移至基板110上。\n\n[0085]下面提供具体实施例对本发明进行说明，但本发明并不局限于下述示例，应当理解，所附权利要求概括了本发明的范围在本发明构思的引导下本领域的技术人员应意识到，对本发明的各示例所进行的一定的改变，都将被本发明的权利要求书的精神和范围所覆盖。\n\n[0086]实施例1\n\n[0087]本实施例提供一种显示器件100。\n\n[0088]请参照图1所示，本实施例的显示器件100包括基板110、像素电极150、剥离辅助层160、像素界定层170、红色子像素120、绿色子像素130、蓝色子像素140以及顶电极180。其中，红色子像素120和绿色子像素130均为QLED，蓝色子像素140为Micro-LED。\n\n[0089]像素电极150设置在基板110上。剥离辅助层160设置在基板110上。剥离辅助层160为负性光刻胶。剥离辅助层160具有第一开口161，蓝色子像素 140设置在第一开口161中并与像素电极150连接。剥离辅助层160的高度和蓝色子像素140的高度相同。随远离基板110，第一开口161逐渐收窄，第一开口 161的侧壁远离基板110的一端弹性抵接于蓝色子像素140。\n\n[0090]像素界定层170设置在基板110上，像素界定层170具有第二开口171、第三开口172以及第四开口173。红色子像素120设置在第二开口171中，绿色子像素130设置在第三开口172中。像素界定层170覆盖在剥离辅助层160上。第四开口173与第一开口161连通，随靠近基板110，第四开口173逐渐收窄。第四开口173与剥离辅助层160的第一开口161连通第四开口173靠近基板110 的一端与第一开口161远离基板110的一端吻合对接且尺寸和形状一致。\n\n[0091]顶电极180为共同电极，从红色子像素120和绿色子像素130上延伸覆盖在蓝色子像素140上。\n\n[0092]实施例2\n\n[0093]本实施例提供一种显示器件的制作方法。本实施例中，步骤之间以及具体步骤中前后操作之间可能省略了一些显示器件制作的常规工艺，本领域技术人员在制作过程中可按实际需求增添工艺步骤。\n\n[0094]请参照图4至图8所示，本实施例的显示器件100的制作方法包括以下步骤：\n\n[0095]步骤1，提供基板110。\n\n[0096]步骤2，如图4所示，在基板110上制作像素电极150。\n\n[0097]步骤4，如图5所示，在基板110上采用负性光刻胶制作剥离辅助层160，对负性光刻胶进行曝光显影，形成第一开口161。随远离基板110，第一开口161 逐渐收窄。\n\n[0098]步骤5，如图6所示，在基板110上采用光阻材料制作像素界定层170，对像素界定层170进行曝光显影，形成第二开口171、第三开口172以及第四开口 173。第四开口173与第一开口161连通，随靠近基板110，第四开口173逐渐收窄。第四开口173与剥离辅助层160的第一开口161连通第四开口173靠近基板110的一端与第一开口161远离基板110的一端正好重合。第四开口173 和第一开口161形成一个“上宽、中窄、下宽”的通道结构。\n\n[0099]步骤6，如图7所示，通过转印工艺将蓝色子像素140经由第四开口173和第一开口161转移至基板110上的像素电极150上。转印头220提起时，剥离辅助层160对蓝色子像素140形成轻微挤压，从而在侧面形成较大的摩檫力，提升蓝色子像素140的剥离良率。\n\n[0100]步骤7，如图8所示，在第二开口171和第三开口172中的上述像素电极 150上沉积空穴注入层、空穴传输层、量子点发光层和电子传输层等层，形成红色子像素120和绿色子像素130。\n\n[0101]步骤8，整面沉积顶电极180，形成顶部共同电极，使得各子像素连接到驱动电路上，形成完整的器件以及驱动电流回路，得到如图1所示的显示器件100。\n\n[0102]上述显示器件100将蓝色Micro-LED、红色QLED和绿色QLED集成于同一显示器件中，解决了蓝色QLED效率和寿命较差的问题，提高了显示器件的效率和寿命。由于仅蓝色子像素采用Micro-LED，因此可以大幅降低Micro-LED 的转移制作成本，同时由于蓝色Micro-LED相比于红绿Micro-LED，其器件效率随芯片尺寸减小下降幅度最小，因此上述显示器件100各取所长，扬长避短，兼具效率、寿命和成本等方面的优势。\n\n[0103]以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。\n\n[0104]以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10997, 24051, '技术领域\n\n[0001]本发明涉及显示技术领域，特别是涉及一种显示器件及其制作方法。\n\n背景技术\n\n[0002]在信息社会的当代，作为可视信息传输媒介的显示器件的重要性在进一步加强。目前，显示器件正朝着更轻、更薄、更低能耗、更低成本以及更好图像质量的趋势发展。\n\n[0003]量子点发光二极管(QLED)由于其具有自发光、反应快、视角广、亮度高、轻薄等优点，成为目前显示器件研究的主要方向之一。目前，红色和绿色QLED无论是在效率还是寿命上都已经接近商业化需求，但蓝色QLED在效率、寿命上仍有欠缺，且其进步较为缓慢，影响了全彩QLED的量产进展。同样地，蓝色OLED也存在寿命较短的问题。\n\n[0004]微型LED(Micro-LED)由于其高效率、高稳定性等优点近几年引起了行业内广泛关注，但由于其制作成本较高，很难在大尺寸显示面板上得到广泛应用。同时，红、绿Micro-LED随着芯片尺寸的减小，效率会大幅下降。\n\n[0005]因此，将红绿QLED和蓝色Micro-LED进行结合到一个显示器件中是解决各自缺点的一种方案。然而，由于Micro-LED的厚度远大于QLED的厚度，导致显示器件的表面高度差明显增大，影响后续QLED的封装效果。\n\n发明内容\n\n[0006]基于此，有必要提供一种显示器件及其制作方法，以解决由于Micro-LED的厚度远大于QLED的厚度，导致显示器件的表面高度差明显增大，影响后续QLED的封装效果的问题。\n\n[0007]本发明的一个目的是提供一种显示器件，方案如下：\n\n[0008]一种显示器件，包括：\n\n[0009]基板；\n\n[0010]中间层，覆盖在所述基板上；\n\n[0011]第一子像素，所述第一子像素为Micro-LED，所述第一子像素埋设在所述中间层中，且所述中间层至少露出所述第一子像素远离所述基板的一侧表面；以及\n\n[0012]第二子像素，所述第二子像素包括QLED和/或OLED，所述第二子像素设置在所述中间层远离所述基板的一侧上。\n\n[0013]在其中一个实施例中，所述中间层的高度不低于所述第一子像素的高度。\n\n[0014]在其中一个实施例中，所述中间层包括钝化层和平坦层中的至少一层。\n\n[0015]在其中一个实施例中，所述中间层包括钝化层和平坦层，所述钝化层相较于所述平坦层更靠近所述基板。\n\n[0016]在其中一个实施例中，所述第一子像素的侧面由内到外依次由所述钝化层和所述平坦层包裹。\n\n[0017]在其中一个实施例中，所述显示器件还包括第一驱动TFT以及第二驱动TFT，所述第一驱动TFT和所述第二驱动TFT设置在所述基板和所述中间层之间，所述第一子像素设置在所述第一驱动TFT的源极或者漏极上，所述第二子像素通过贯穿所述中间层的过孔与所述第二驱动TFT的源极或者漏极电连接。\n\n[0018]在其中一个实施例中，所述第一子像素靠近所述基板的一侧表面与所述第一驱动TFT的源极或者漏极直接面接触。\n\n[0019]在其中一个实施例中，所述第一子像素靠近所述基板的一侧表面完全与所述第一驱动TFT的源极或者漏极接触。\n\n[0020]在其中一个实施例中，所述显示器件还包括像素界定层，所述像素界定层设置在所述中间层远离所述基板的一侧上，所述像素界定层具有第一开口以及第二开口，所述第一开口露出所述第一子像素，所述第二开口露出所述第二子像素。\n\n[0021]在其中一个实施例中，所述第二子像素的顶电极延伸至所述第一子像素远离所述基板的一侧表面上。\n\n[0022]在其中一个实施例中，所述第一子像素为蓝色子像素，所述第二子像素包括红色子像素和绿色子像素。\n\n[0023]在其中一个实施例中，所述第一子像素为垂直结构Micro-LED。\n\n[0024]本发明的另一个目的是提供一种显示器件的制作方法，方案如下：\n\n[0025]一种显示器件的制作方法，包括以下步骤：\n\n[0026]提供基板；\n\n[0027]在所述基板上制作第一子像素，所述第一子像素为Micro-LED；\n\n[0028]在所述基板上制作中间层，所述中间层掩埋所述第一子像素并至少露出所述第一子像素远离所述基板的一侧表面；\n\n[0029]在所述中间层远离所述基板的一侧上制作第二子像素，所述第二子像素包括QLED和/或OLED。\n\n[0030]在其中一个实施例中，在制作所述中间层时，使所述中间层完全掩埋所述第一子像素，再在所述中间层上挖孔，以露出所述第一子像素远离所述基板的一侧表面。\n\n[0031]与现有方案相比，上述显示器件及其制作方法具有以下有益效果：\n\n[0032]上述显示器件及其制作方法在基板上设置第一子像素和第二子像素，第一子像素为Micro-LED，第二子像素包括QLED和/或OLED，并且，在基板上设置中间层，第一子像素埋设在中间层中，且中间层至少露出第一子像素远离基板的一侧表面，而第二子像素设置在中间层远离基板的一侧上，如此，第一子像素相较于第二子像素更靠近基板，能够避免第一子像素相对于第二子像素过高的情况，从而能够提高后续的封装效果。\n\n附图说明\n\n[0033]图1为一实施例的显示器件的结构示意图；\n\n[0034]图2为一实施例的显示器件的制作方法的流程示意图；\n\n[0035]图3为在基板上制作第一驱动TFT以及第二驱动TFT的示意图；\n\n[0036]图4为在第一驱动TFT的源极上设置第一子像素的示意图；\n\n[0037]图5为在基板上制作钝化层的示意图；\n\n[0038]图6为在钝化层上制作平坦层并挖孔的示意图；\n\n[0039]图7为在平坦层上制作像素电极的示意图；\n\n[0040]图8为在平坦层上制作像素界定层示意图。\n\n[0041]附图标记说明：\n\n[0042]100、显示器件；110、基板；141、第一驱动TFT；142、第二驱动TFT；120、中间层；121、钝化层；122、平坦层；150、像素界定层；151、第一开口；152、第二开口；123、过孔；131、第一子像素；132、第二子像素；160、像素电极；170、顶电极。\n\n具体实施方式\n\n[0043]为了便于理解本发明，下面将参照相关附图对本发明进行更全面的描述。附图中给出了本发明的较佳实施例。但是，本发明可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本发明的公开内容的理解更加透彻全面。\n\n[0044]需要说明的是，当元件被称为“设置于”另一个元件，它可以直接在另一个元件上或者也可以存在居中的元件。当一个元件被认为是“连接”另一个元件，它可以是直接连接到另一个元件或者可能同时存在居中元件。本文所使用的术语“垂直的”、“水平的”、“左”、“右”以及类似的表述只是为了说明的目的，并不表示是唯一的实施方式。\n\n[0045]在本发明的描述中，需要理解的是，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量或顺序。\n\n[0046]除非另有定义，本文所使用的所有的技术和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同。本文中在本发明的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本发明。本文所使用的术语“和/或”包括一个或多个相关的所列项目的任意的和所有的组合。\n\n[0047]请参考图1所示，本发明一实施例的显示器件100包括基板110、中间层120、第一子像素131以及第二子像素132。\n\n[0048]其中，中间层120覆盖在基板110上。第一子像素131为Micro-LED，第二子像素132包括QLED和/或OLED。第一子像素131埋设在中间层120中，且中间层120至少露出第一子像素131远离基板110的一侧表面。第二子像素132设置在中间层120远离基板110的一侧上。\n\n[0049]可以理解，第二子像素132有多个，第二子像素132可以全部为QLED，也可以全部为OLED，也可以有部分为QLED，部分为OLED。\n\n[0050]上述显示器件100在基板110上设置第一子像素131和第二子像素132，第一子像素131为Micro-LED，第二子像素132包括QLED和/或OLED，并且，在基板110上设置中间层120，第一子像素131埋设在中间层120中，且中间层120至少露出第一子像素131远离基板110的一侧表面，而第二子像素132设置在中间层120远离基板110的一侧上，如此，第一子像素131相较于第二子像素132更靠近基板110，能够避免第一子像素131相对于第二子像素132过高的情况，从而能够提高后续的封装效果。\n\n[0051]基板110可以是刚性基板，如玻璃等，也可以是柔性基板，如聚酰亚胺(PI)等。\n\n[0052]在其中一个示例中，第一子像素131为蓝色子像素，第二子像素132包括红色子像素和绿色子像素。第一子像素131可以是但不限于GaN系的蓝色Micro-LED。\n\n[0053]目前，对于QLED和OLED来说，红色和绿色器件的效率和寿命较佳，而蓝色器件较差。对于Micro-LED来说，虽然其具有高效率和高稳定性等优点，但制作成本较高，而且红色和绿色Micro-LED随着芯片尺寸的减小，效率会大幅下降。上述示例的显示器件100将蓝色Micro-LED、红色和绿色的QLED和/或OLED集成于同一显示器件100中，由于仅蓝色子像素采用Micro-LED，因此可以大幅降低Micro-LED的转移制作成本，同时由于蓝色Micro-LED相比于红绿Micro-LED，其器件的效率随芯片尺寸减小下降幅度最小，能够各取所长，扬长避短，使显示器件100兼具效率、寿命和成本等方面的优势。\n\n[0054]优选地，中间层120为绝缘层，即中间层120的材料为绝缘材料。\n\n[0055]在其中一个示例中，中间层120包括钝化层121和平坦层122中的至少一层。在本示例中，中间层120可以是单一的钝化层121，也可以是单一的平坦层122，也可以是钝化层121和平坦层122构成叠层。可以理解地，中间层120还可以包括其他的功能层。\n\n[0056]钝化层121的材料可以是但不限于氧化硅、氮化硅、氮氧化硅、氧化铝等氧化物中一种或多种。\n\n[0057]平坦层122可以采用有机材料。\n\n[0058]上述示例的显示器件100中，钝化层121能够对子像素下方的驱动阵列进行保护，防止后续制程影响器件性能。平坦层122能够平坦化驱动阵列造成基板110表面的不平坦性，起到表面平坦化的作用，提高后续制作的第二子像素132的像素电极160的平坦度，从而提高第二子像素132的发光均匀性。再者，将第一子像素131埋设在上述常规功能层中，能够避免增加额外的层而导致显示器件100的整体厚度增加。\n\n[0059]在其中一个示例中，中间层120包括钝化层121和平坦层122，钝化层121相较于平坦层122更靠近基板110。在制作中间层120时，可先在基板110上沉积钝化层121，再在钝化层121上沉积平坦层122。\n\n[0060]在图1所示的具体示例中，第一子像素131的侧面由内到外依次由钝化层121和平坦层122包裹。\n\n[0061]上述示例的显示器件100中，钝化层121包裹第一子像素131的侧面，可以对第一子像素131进行保护，防止后续制程影响器件性能。\n\n[0062]如图1所示，在其中一个示例中，中间层120的高度不低于第一子像素131的高度。在本示例中，中间层120完全包裹第一子像素131的侧面。需要说明的是，在本发明中，“第一子像素131的侧面”指的是第一子像素131中除了远离基板110的一侧表面和靠近基板110的一侧表面之外的侧表面。\n\n[0063]在其中一个示例中，显示器件100还包括第一驱动TFT141以及第二驱动TFT142。第一驱动TFT141和第二驱动TFT142设置在基板110和中间层120之间。第一子像素131设置在第一驱动TFT141的源极或者漏极上，第一驱动TFT141用于驱动第一子像素131发光。第二子像素132通过贯穿中间层120的过孔123与第二驱动TFT142的源极或者漏极电连接，第二驱动TFT142用于驱动第二子像素132发光。\n\n[0064]驱动TFT可以是但不限于金属氧化物TFT、LTPS TFT或LTPO TFT等。\n\n[0065]在其中一个示例中，第一子像素131靠近基板110的一侧表面与第一驱动TFT141的源极或者漏极直接面接触。在本示例中，第一子像素131靠近基板110的一侧表面与第一驱动TFT141的源极或者漏极之间没有居中层，第一子像素131也并非通过过孔123与第一驱动TFT141进行连接。第一驱动TFT141的源极或者漏极相当于直接作为第一子像素131的像素电极。在制作时，可以在第一驱动TFT141的源极或者漏极上直接设置第一子像素131。\n\n[0066]在其中一个示例中，第一子像素131靠近基板110的一侧表面完全与第一驱动TFT141的源极或者漏极接触。在本示例中，可以通过扩大与第一子像素131接触的第一驱动TFT141的源极或者漏极的面积，使得第一子像素131靠近基板110的一侧表面能够完全与之面接触。\n\n[0067]在其中一个示例中，显示器件100还包括像素界定层150。像素界定层150设置在中间层120远离基板110的一侧上，像素界定层150具有第一开口151以及第二开口152，第一开口151露出第一子像素131，第二开口152露出第二子像素132。\n\n[0068]在制作时，可先在中间层120上形成像素界定层150，在第二开口152中沉积功能层(如空穴注入层、空穴传输层、量子点发光层和电子传输层等多种功能层)形成第二子像素132。像素界定层150限定出第二子像素132的发光区域。\n\n[0069]像素界定层150可以采用光阻材料制备而成。在其中一个示例中，像素界定层150采用表面呈疏液性的光阻材料制备而成。\n\n[0070]在其中一个示例中，第二子像素132的顶电极170延伸至第一子像素131远离基板110的一侧表面上，使得各子像素连接到驱动电路上，形成完整的器件以及驱动电流回路。\n\n[0071]顶电极170为透明电极或反射电极。若显示器件100为底发射型，则顶电极170为反射电极，可以是金属、金属合金，如Al、Ag或它们的合金；如ITO、IZO等导电无机金属氧化物，或导电银纳米线、碳纳米管等。若显示器件100为顶发射型，则顶电极170为透明电极，可以是薄层金属或金属合金，如Al、Ag或它们的合金，也可以是导电金属氧化物，如ITO、IZO等导电无机金属氧化物等。\n\n[0072]在其中一个示例中，第一子像素131为垂直结构型Micro-LED。垂直结构型Micro-LED的结构与QLED的结构类似，有利于集成到现有的QLED显示面板结构中，不需要对面板结构进行大幅改动，降低了制作难度和制作成本。\n\n[0073]进一步地，如图2所示，本发明还提供一种上述任一示例的显示器件100的制作方法10。该制作方法10包括以下步骤：\n\n[0074]步骤S100，提供基板110；\n\n[0075]步骤S200，在基板110上制作第一子像素131，第一子像素131为Micro-LED；\n\n[0076]步骤S300，在基板110上制作中间层120，中间层120掩埋第一子像素131并至少露出第一子像素131远离基板110的一侧表面；\n\n[0077]步骤S400，在中间层120远离基板110的一侧上制作第二子像素132，第二子像素132包括QLED和/或OLED。\n\n[0078]在其中一个示例中，在步骤S200之前，还包括：在基板110上制作第一驱动TFT141以及第二驱动TFT142。第一驱动TFT141用于驱动第一子像素131发光，第二驱动TFT142用于驱动第二子像素132发光。\n\n[0079]在其中一个示例中，在步骤S300中，使中间层120完全掩埋第一子像素131，再在中间层120上挖孔，以露出第一子像素131远离基板110的一侧表面。\n\n[0080]第一子像素131可采用转移工艺第一子像素131转移至第一驱动TFT141的源极或者漏极上。\n\n[0081]下面提供具体实施例对本发明进行说明，但本发明并不局限于下述示例，应当理解，所附权利要求概括了本发明的范围在本发明构思的引导下本领域的技术人员应意识到，对本发明的各示例所进行的一定的改变，都将被本发明的权利要求书的精神和范围所覆盖。\n\n[0082]实施例1\n\n[0083]本实施例提供一种显示器件100。\n\n[0084]请参照图1所示，本实施例的显示器件100包括基板110、第一驱动TFT141、第二驱动TFT142、钝化层121、平坦层122、像素界定层150、第一子像素131以及第二子像素132。\n\n[0085]第一驱动TFT141和第二驱动TFT142呈阵列排布设置在基板110上。\n\n[0086]第一子像素131为垂直结构的蓝色Micro-LED芯片，第一子像素131设置在第二驱动TFT142的源极上，第一子像素131靠近基板110的一侧表面完全与第一驱动TFT141的源极面接触。\n\n[0087]钝化层121覆盖在第一驱动TFT141和第二驱动TFT142上。平坦层122覆盖在钝化层121上。第一子像素131埋设在由钝化层121和平坦层122构成的中间层120中，第一子像素131的侧面由内到外依次由钝化层121和平坦层122包裹。平坦层122上有开口，露出第一子像素131远离基板110的一侧表面。\n\n[0088]第二子像素132为红色QLED和绿色QLED，第二子像素132设置在中间层120远离基板110的一侧上。\n\n[0089]像素界定层150设置在中间层120远离基板110的一侧上，像素界定层150具有第一开口151以及第二开口152，第一开口151露出第一子像素131，第二开口152露出第二子像素132。第二子像素132的顶电极170延伸至第一子像素131远离基板110的一侧表面上。\n\n[0090]实施例2\n\n[0091]本实施例提供一种显示器件100的制作方法。本实施例中，步骤之间以及具体步骤中前后操作之间可能省略了一些显示器件100制作的常规工艺，本领域技术人员在制作过程中可按实际需求增添工艺步骤。\n\n[0092]请参照图3至图8所示，本实施例的显示器件100的制作方法包括以下步骤：\n\n[0093]步骤1，提供基板110。\n\n[0094]步骤2，如图3所示，在基板110上制作第一驱动TFT141以及第二驱动TFT142，其中，第一驱动TFT141的源极表面积更大。\n\n[0095]步骤3，如图4所示，采用转移工艺转移第一子像素131到第一驱动TFT141的源极上，第一子像素131为垂直结构的蓝色Micro-LED芯片。\n\n[0096]步骤4，如图5所示，整面沉积钝化层121，覆盖第一子像素131和第二驱动TFT142。\n\n[0097]步骤5，如图6所示，在钝化层121上整面沉积平坦层122，覆盖钝化层121，并且，在钝化层121和平坦层122上挖开孔，从平坦层122远离基板110的一侧贯穿平坦层122、钝化层121至露出第一子像素131的上表面。在钝化层121和平坦层122上挖过孔123，从平坦层122远离基板110的一侧贯穿平坦层122、钝化层121至第二驱动TFT142的源极。\n\n[0098]步骤6，如图7所示，沉积像素电极160使之通过过孔123与第二驱动TFT142的源极连接。\n\n[0099]步骤7，如图8所示，整面沉积疏水性光阻材料，并曝光显影，形成像素界定层150，像素界定层150具有第一开口151以及第二开口152，第一开口151露出第一子像素131，第二开口152露出第二子像素132。\n\n[0100]步骤8，如图1所示，在第二开口152中的上述像素电极160上继续沉积空穴注入层、空穴传输层、量子点发光层和电子传输层等层，形成第二子像素132。第二子像素132为红色QLED和绿色QLED。整面沉积顶电极170，形成顶部共同电极，使得各子像素连接到驱动电路上，形成完整的器件以及驱动电流回路。\n\n[0101]上述显示器件100及其制作方法在基板110上设置第一子像素131和第二子像素132，第一子像素131为Micro-LED，第二子像素132包括QLED和/或OLED，并且，在基板110上设置中间层120，第一子像素131埋设在中间层120中，且中间层120至少露出第一子像素131远离基板110的一侧表面，而第二子像素132设置在中间层120远离基板110的一侧上，如此，第一子像素131相较于第二子像素132更靠近基板110，能够避免第一子像素131相对于第二子像素132过高的情况，从而能够提高后续的封装效果。\n\n[0102]以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。\n\n[0103]以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。', '技术领域\n\n[0001]本发明涉及显示技术领域，特别是涉及一种显示器件及其制作方法。\n\n背景技术\n\n[0002]在信息社会的当代，作为可视信息传输媒介的显示器件的重要性在进一步加强。目前，显示器件正朝着更轻、更薄、更低能耗、更低成本以及更好图像质量的趋势发展。\n\n[0003]量子点发光二极管(QLED)由于其具有自发光、反应快、视角广、亮度高、轻薄等优点，成为目前显示器件研究的主要方向之一。目前，红色和绿色QLED无论是在效率还是寿命上都已经接近商业化需求，但蓝色QLED在效率、寿命上仍有欠缺，且其进步较为缓慢，影响了全彩QLED的量产进展。同样地，蓝色OLED也存在寿命较短的问题。\n\n[0004]微型LED(Micro-LED)由于其高效率、高稳定性等优点近几年引起了行业内广泛关注，但由于其制作成本较高，很难在大尺寸显示面板上得到广泛应用。同时，红、绿Micro-LED随着芯片尺寸的减小，效率会大幅下降。\n\n[0005]因此，将红绿QLED和蓝色Micro-LED进行结合到一个显示器件中是解决各自缺点的一种方案。然而，由于Micro-LED的厚度远大于QLED的厚度，导致显示器件的表面高度差明显增大，影响后续QLED的封装效果。\n\n发明内容\n\n[0006]基于此，有必要提供一种显示器件及其制作方法，以解决由于Micro-LED的厚度远大于QLED的厚度，导致显示器件的表面高度差明显增大，影响后续QLED的封装效果的问题。\n\n[0007]本发明的一个目的是提供一种显示器件，方案如下：\n\n[0008]一种显示器件，包括：\n\n[0009]基板；\n\n[0010]中间层，覆盖在所述基板上；\n\n[0011]第一子像素，所述第一子像素为Micro-LED，所述第一子像素埋设在所述中间层中，且所述中间层至少露出所述第一子像素远离所述基板的一侧表面；以及\n\n[0012]第二子像素，所述第二子像素包括QLED和/或OLED，所述第二子像素设置在所述中间层远离所述基板的一侧上。\n\n[0013]在其中一个实施例中，所述中间层的高度不低于所述第一子像素的高度。\n\n[0014]在其中一个实施例中，所述中间层包括钝化层和平坦层中的至少一层。\n\n[0015]在其中一个实施例中，所述中间层包括钝化层和平坦层，所述钝化层相较于所述平坦层更靠近所述基板。\n\n[0016]在其中一个实施例中，所述第一子像素的侧面由内到外依次由所述钝化层和所述平坦层包裹。\n\n[0017]在其中一个实施例中，所述显示器件还包括第一驱动TFT以及第二驱动TFT，所述第一驱动TFT和所述第二驱动TFT设置在所述基板和所述中间层之间，所述第一子像素设置在所述第一驱动TFT的源极或者漏极上，所述第二子像素通过贯穿所述中间层的过孔与所述第二驱动TFT的源极或者漏极电连接。\n\n[0018]在其中一个实施例中，所述第一子像素靠近所述基板的一侧表面与所述第一驱动TFT的源极或者漏极直接面接触。\n\n[0019]在其中一个实施例中，所述第一子像素靠近所述基板的一侧表面完全与所述第一驱动TFT的源极或者漏极接触。\n\n[0020]在其中一个实施例中，所述显示器件还包括像素界定层，所述像素界定层设置在所述中间层远离所述基板的一侧上，所述像素界定层具有第一开口以及第二开口，所述第一开口露出所述第一子像素，所述第二开口露出所述第二子像素。\n\n[0021]在其中一个实施例中，所述第二子像素的顶电极延伸至所述第一子像素远离所述基板的一侧表面上。\n\n[0022]在其中一个实施例中，所述第一子像素为蓝色子像素，所述第二子像素包括红色子像素和绿色子像素。\n\n[0023]在其中一个实施例中，所述第一子像素为垂直结构Micro-LED。\n\n[0024]本发明的另一个目的是提供一种显示器件的制作方法，方案如下：\n\n[0025]一种显示器件的制作方法，包括以下步骤：\n\n[0026]提供基板；\n\n[0027]在所述基板上制作第一子像素，所述第一子像素为Micro-LED；\n\n[0028]在所述基板上制作中间层，所述中间层掩埋所述第一子像素并至少露出所述第一子像素远离所述基板的一侧表面；\n\n[0029]在所述中间层远离所述基板的一侧上制作第二子像素，所述第二子像素包括QLED和/或OLED。\n\n[0030]在其中一个实施例中，在制作所述中间层时，使所述中间层完全掩埋所述第一子像素，再在所述中间层上挖孔，以露出所述第一子像素远离所述基板的一侧表面。\n\n[0031]与现有方案相比，上述显示器件及其制作方法具有以下有益效果：\n\n[0032]上述显示器件及其制作方法在基板上设置第一子像素和第二子像素，第一子像素为Micro-LED，第二子像素包括QLED和/或OLED，并且，在基板上设置中间层，第一子像素埋设在中间层中，且中间层至少露出第一子像素远离基板的一侧表面，而第二子像素设置在中间层远离基板的一侧上，如此，第一子像素相较于第二子像素更靠近基板，能够避免第一子像素相对于第二子像素过高的情况，从而能够提高后续的封装效果。\n\n附图说明\n\n[0033]图1为一实施例的显示器件的结构示意图；\n\n[0034]图2为一实施例的显示器件的制作方法的流程示意图；\n\n[0035]图3为在基板上制作第一驱动TFT以及第二驱动TFT的示意图；\n\n[0036]图4为在第一驱动TFT的源极上设置第一子像素的示意图；\n\n[0037]图5为在基板上制作钝化层的示意图；\n\n[0038]图6为在钝化层上制作平坦层并挖孔的示意图；\n\n[0039]图7为在平坦层上制作像素电极的示意图；\n\n[0040]图8为在平坦层上制作像素界定层示意图。\n\n[0041]附图标记说明：\n\n[0042]100、显示器件；110、基板；141、第一驱动TFT；142、第二驱动TFT；120、中间层；121、钝化层；122、平坦层；150、像素界定层；151、第一开口；152、第二开口；123、过孔；131、第一子像素；132、第二子像素；160、像素电极；170、顶电极。\n\n具体实施方式\n\n[0043]为了便于理解本发明，下面将参照相关附图对本发明进行更全面的描述。附图中给出了本发明的较佳实施例。但是，本发明可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本发明的公开内容的理解更加透彻全面。\n\n[0044]需要说明的是，当元件被称为“设置于”另一个元件，它可以直接在另一个元件上或者也可以存在居中的元件。当一个元件被认为是“连接”另一个元件，它可以是直接连接到另一个元件或者可能同时存在居中元件。本文所使用的术语“垂直的”、“水平的”、“左”、“右”以及类似的表述只是为了说明的目的，并不表示是唯一的实施方式。\n\n[0045]在本发明的描述中，需要理解的是，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量或顺序。\n\n[0046]除非另有定义，本文所使用的所有的技术和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同。本文中在本发明的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本发明。本文所使用的术语“和/或”包括一个或多个相关的所列项目的任意的和所有的组合。\n\n[0047]请参考图1所示，本发明一实施例的显示器件100包括基板110、中间层120、第一子像素131以及第二子像素132。\n\n[0048]其中，中间层120覆盖在基板110上。第一子像素131为Micro-LED，第二子像素132包括QLED和/或OLED。第一子像素131埋设在中间层120中，且中间层120至少露出第一子像素131远离基板110的一侧表面。第二子像素132设置在中间层120远离基板110的一侧上。\n\n[0049]可以理解，第二子像素132有多个，第二子像素132可以全部为QLED，也可以全部为OLED，也可以有部分为QLED，部分为OLED。\n\n[0050]上述显示器件100在基板110上设置第一子像素131和第二子像素132，第一子像素131为Micro-LED，第二子像素132包括QLED和/或OLED，并且，在基板110上设置中间层120，第一子像素131埋设在中间层120中，且中间层120至少露出第一子像素131远离基板110的一侧表面，而第二子像素132设置在中间层120远离基板110的一侧上，如此，第一子像素131相较于第二子像素132更靠近基板110，能够避免第一子像素131相对于第二子像素132过高的情况，从而能够提高后续的封装效果。\n\n[0051]基板110可以是刚性基板，如玻璃等，也可以是柔性基板，如聚酰亚胺(PI)等。\n\n[0052]在其中一个示例中，第一子像素131为蓝色子像素，第二子像素132包括红色子像素和绿色子像素。第一子像素131可以是但不限于GaN系的蓝色Micro-LED。\n\n[0053]目前，对于QLED和OLED来说，红色和绿色器件的效率和寿命较佳，而蓝色器件较差。对于Micro-LED来说，虽然其具有高效率和高稳定性等优点，但制作成本较高，而且红色和绿色Micro-LED随着芯片尺寸的减小，效率会大幅下降。上述示例的显示器件100将蓝色Micro-LED、红色和绿色的QLED和/或OLED集成于同一显示器件100中，由于仅蓝色子像素采用Micro-LED，因此可以大幅降低Micro-LED的转移制作成本，同时由于蓝色Micro-LED相比于红绿Micro-LED，其器件的效率随芯片尺寸减小下降幅度最小，能够各取所长，扬长避短，使显示器件100兼具效率、寿命和成本等方面的优势。\n\n[0054]优选地，中间层120为绝缘层，即中间层120的材料为绝缘材料。\n\n[0055]在其中一个示例中，中间层120包括钝化层121和平坦层122中的至少一层。在本示例中，中间层120可以是单一的钝化层121，也可以是单一的平坦层122，也可以是钝化层121和平坦层122构成叠层。可以理解地，中间层120还可以包括其他的功能层。\n\n[0056]钝化层121的材料可以是但不限于氧化硅、氮化硅、氮氧化硅、氧化铝等氧化物中一种或多种。\n\n[0057]平坦层122可以采用有机材料。\n\n[0058]上述示例的显示器件100中，钝化层121能够对子像素下方的驱动阵列进行保护，防止后续制程影响器件性能。平坦层122能够平坦化驱动阵列造成基板110表面的不平坦性，起到表面平坦化的作用，提高后续制作的第二子像素132的像素电极160的平坦度，从而提高第二子像素132的发光均匀性。再者，将第一子像素131埋设在上述常规功能层中，能够避免增加额外的层而导致显示器件100的整体厚度增加。\n\n[0059]在其中一个示例中，中间层120包括钝化层121和平坦层122，钝化层121相较于平坦层122更靠近基板110。在制作中间层120时，可先在基板110上沉积钝化层121，再在钝化层121上沉积平坦层122。\n\n[0060]在图1所示的具体示例中，第一子像素131的侧面由内到外依次由钝化层121和平坦层122包裹。\n\n[0061]上述示例的显示器件100中，钝化层121包裹第一子像素131的侧面，可以对第一子像素131进行保护，防止后续制程影响器件性能。\n\n[0062]如图1所示，在其中一个示例中，中间层120的高度不低于第一子像素131的高度。在本示例中，中间层120完全包裹第一子像素131的侧面。需要说明的是，在本发明中，“第一子像素131的侧面”指的是第一子像素131中除了远离基板110的一侧表面和靠近基板110的一侧表面之外的侧表面。\n\n[0063]在其中一个示例中，显示器件100还包括第一驱动TFT141以及第二驱动TFT142。第一驱动TFT141和第二驱动TFT142设置在基板110和中间层120之间。第一子像素131设置在第一驱动TFT141的源极或者漏极上，第一驱动TFT141用于驱动第一子像素131发光。第二子像素132通过贯穿中间层120的过孔123与第二驱动TFT142的源极或者漏极电连接，第二驱动TFT142用于驱动第二子像素132发光。\n\n[0064]驱动TFT可以是但不限于金属氧化物TFT、LTPS TFT或LTPO TFT等。\n\n[0065]在其中一个示例中，第一子像素131靠近基板110的一侧表面与第一驱动TFT141的源极或者漏极直接面接触。在本示例中，第一子像素131靠近基板110的一侧表面与第一驱动TFT141的源极或者漏极之间没有居中层，第一子像素131也并非通过过孔123与第一驱动TFT141进行连接。第一驱动TFT141的源极或者漏极相当于直接作为第一子像素131的像素电极。在制作时，可以在第一驱动TFT141的源极或者漏极上直接设置第一子像素131。\n\n[0066]在其中一个示例中，第一子像素131靠近基板110的一侧表面完全与第一驱动TFT141的源极或者漏极接触。在本示例中，可以通过扩大与第一子像素131接触的第一驱动TFT141的源极或者漏极的面积，使得第一子像素131靠近基板110的一侧表面能够完全与之面接触。\n\n[0067]在其中一个示例中，显示器件100还包括像素界定层150。像素界定层150设置在中间层120远离基板110的一侧上，像素界定层150具有第一开口151以及第二开口152，第一开口151露出第一子像素131，第二开口152露出第二子像素132。\n\n[0068]在制作时，可先在中间层120上形成像素界定层150，在第二开口152中沉积功能层(如空穴注入层、空穴传输层、量子点发光层和电子传输层等多种功能层)形成第二子像素132。像素界定层150限定出第二子像素132的发光区域。\n\n[0069]像素界定层150可以采用光阻材料制备而成。在其中一个示例中，像素界定层150采用表面呈疏液性的光阻材料制备而成。\n\n[0070]在其中一个示例中，第二子像素132的顶电极170延伸至第一子像素131远离基板110的一侧表面上，使得各子像素连接到驱动电路上，形成完整的器件以及驱动电流回路。\n\n[0071]顶电极170为透明电极或反射电极。若显示器件100为底发射型，则顶电极170为反射电极，可以是金属、金属合金，如Al、Ag或它们的合金；如ITO、IZO等导电无机金属氧化物，或导电银纳米线、碳纳米管等。若显示器件100为顶发射型，则顶电极170为透明电极，可以是薄层金属或金属合金，如Al、Ag或它们的合金，也可以是导电金属氧化物，如ITO、IZO等导电无机金属氧化物等。\n\n[0072]在其中一个示例中，第一子像素131为垂直结构型Micro-LED。垂直结构型Micro-LED的结构与QLED的结构类似，有利于集成到现有的QLED显示面板结构中，不需要对面板结构进行大幅改动，降低了制作难度和制作成本。\n\n[0073]进一步地，如图2所示，本发明还提供一种上述任一示例的显示器件100的制作方法10。该制作方法10包括以下步骤：\n\n[0074]步骤S100，提供基板110；\n\n[0075]步骤S200，在基板110上制作第一子像素131，第一子像素131为Micro-LED；\n\n[0076]步骤S300，在基板110上制作中间层120，中间层120掩埋第一子像素131并至少露出第一子像素131远离基板110的一侧表面；\n\n[0077]步骤S400，在中间层120远离基板110的一侧上制作第二子像素132，第二子像素132包括QLED和/或OLED。\n\n[0078]在其中一个示例中，在步骤S200之前，还包括：在基板110上制作第一驱动TFT141以及第二驱动TFT142。第一驱动TFT141用于驱动第一子像素131发光，第二驱动TFT142用于驱动第二子像素132发光。\n\n[0079]在其中一个示例中，在步骤S300中，使中间层120完全掩埋第一子像素131，再在中间层120上挖孔，以露出第一子像素131远离基板110的一侧表面。\n\n[0080]第一子像素131可采用转移工艺第一子像素131转移至第一驱动TFT141的源极或者漏极上。\n\n[0081]下面提供具体实施例对本发明进行说明，但本发明并不局限于下述示例，应当理解，所附权利要求概括了本发明的范围在本发明构思的引导下本领域的技术人员应意识到，对本发明的各示例所进行的一定的改变，都将被本发明的权利要求书的精神和范围所覆盖。\n\n[0082]实施例1\n\n[0083]本实施例提供一种显示器件100。\n\n[0084]请参照图1所示，本实施例的显示器件100包括基板110、第一驱动TFT141、第二驱动TFT142、钝化层121、平坦层122、像素界定层150、第一子像素131以及第二子像素132。\n\n[0085]第一驱动TFT141和第二驱动TFT142呈阵列排布设置在基板110上。\n\n[0086]第一子像素131为垂直结构的蓝色Micro-LED芯片，第一子像素131设置在第二驱动TFT142的源极上，第一子像素131靠近基板110的一侧表面完全与第一驱动TFT141的源极面接触。\n\n[0087]钝化层121覆盖在第一驱动TFT141和第二驱动TFT142上。平坦层122覆盖在钝化层121上。第一子像素131埋设在由钝化层121和平坦层122构成的中间层120中，第一子像素131的侧面由内到外依次由钝化层121和平坦层122包裹。平坦层122上有开口，露出第一子像素131远离基板110的一侧表面。\n\n[0088]第二子像素132为红色QLED和绿色QLED，第二子像素132设置在中间层120远离基板110的一侧上。\n\n[0089]像素界定层150设置在中间层120远离基板110的一侧上，像素界定层150具有第一开口151以及第二开口152，第一开口151露出第一子像素131，第二开口152露出第二子像素132。第二子像素132的顶电极170延伸至第一子像素131远离基板110的一侧表面上。\n\n[0090]实施例2\n\n[0091]本实施例提供一种显示器件100的制作方法。本实施例中，步骤之间以及具体步骤中前后操作之间可能省略了一些显示器件100制作的常规工艺，本领域技术人员在制作过程中可按实际需求增添工艺步骤。\n\n[0092]请参照图3至图8所示，本实施例的显示器件100的制作方法包括以下步骤：\n\n[0093]步骤1，提供基板110。\n\n[0094]步骤2，如图3所示，在基板110上制作第一驱动TFT141以及第二驱动TFT142，其中，第一驱动TFT141的源极表面积更大。\n\n[0095]步骤3，如图4所示，采用转移工艺转移第一子像素131到第一驱动TFT141的源极上，第一子像素131为垂直结构的蓝色Micro-LED芯片。\n\n[0096]步骤4，如图5所示，整面沉积钝化层121，覆盖第一子像素131和第二驱动TFT142。\n\n[0097]步骤5，如图6所示，在钝化层121上整面沉积平坦层122，覆盖钝化层121，并且，在钝化层121和平坦层122上挖开孔，从平坦层122远离基板110的一侧贯穿平坦层122、钝化层121至露出第一子像素131的上表面。在钝化层121和平坦层122上挖过孔123，从平坦层122远离基板110的一侧贯穿平坦层122、钝化层121至第二驱动TFT142的源极。\n\n[0098]步骤6，如图7所示，沉积像素电极160使之通过过孔123与第二驱动TFT142的源极连接。\n\n[0099]步骤7，如图8所示，整面沉积疏水性光阻材料，并曝光显影，形成像素界定层150，像素界定层150具有第一开口151以及第二开口152，第一开口151露出第一子像素131，第二开口152露出第二子像素132。\n\n[0100]步骤8，如图1所示，在第二开口152中的上述像素电极160上继续沉积空穴注入层、空穴传输层、量子点发光层和电子传输层等层，形成第二子像素132。第二子像素132为红色QLED和绿色QLED。整面沉积顶电极170，形成顶部共同电极，使得各子像素连接到驱动电路上，形成完整的器件以及驱动电流回路。\n\n[0101]上述显示器件100及其制作方法在基板110上设置第一子像素131和第二子像素132，第一子像素131为Micro-LED，第二子像素132包括QLED和/或OLED，并且，在基板110上设置中间层120，第一子像素131埋设在中间层120中，且中间层120至少露出第一子像素131远离基板110的一侧表面，而第二子像素132设置在中间层120远离基板110的一侧上，如此，第一子像素131相较于第二子像素132更靠近基板110，能够避免第一子像素131相对于第二子像素132过高的情况，从而能够提高后续的封装效果。\n\n[0102]以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。\n\n[0103]以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。');
INSERT INTO `os_patent_instruction_text` VALUES (10998, 24052, '技术领域\n\n[0001]本实用新型涉及液晶显示技术领域，尤其涉及一种背光模组及含有该背光模组的液晶显示器。\n\n背景技术\n\n[0002]目前的液晶显示器包括液晶模组以及为液晶模组中的液晶面板提供背光的背光模组。因为液晶面板本身不发光，因此背光模组的背光功能在于提供足够的亮度和分布均匀的光源给液晶面板，通过液晶面板的运作显示正常的图像。\n\n[0003]但是，现有的背光的液晶模组工作时，其功耗固定，即背光不会随着液晶模组需要显示图像的亮暗而进行亮暗的调节，也就是说背光亮度不会分区显示，因而这种背光结构不利于节能。\n\n[0004]目前也有部分分区显示的背光结构，其通常采用导光板拼接的方式来实现分区显示，但是这种导光板拼接的方式，在拼接缝隙的地方会存在亮度及色度不均的问题。\n\n实用新型内容\n\n[0005]本实用新型的主要目的在于提供一种背光模组及含有该背光模组的液晶显示器，旨在降低液晶模组功耗，提高背光分区显示效果。\n\n[0006]为了达到上述目的，本实用新型提出一种背光模组，包括背板、直下LED阵列、侧光LED阵列以及导光板，所述背板包括底板及侧板，所述导光板位于所述背板的侧板之间及底板上方，所述直下LED阵列设置在所述背板的底板上，且位于所述导光板中部的下方；所述侧光LED阵列设置在所述导光板的两侧，并与所述导光板的入光面相对，所述导光板的两端邻近所述侧光LED阵列处的出光面或底面设有若干用于散射光线的散光结构。\n\n[0007]优选地，所述导光板的底面包括左部区域、中部区域及右部区域，所述导光板的底面的散光结构设置在所述底面的左部区域及右部区域；所述底面的中部区域正对所述直下LED阵列。\n\n[0008]优选地，所述导光板的底面的左部区域及右部区域上远离所述侧光LED阵列的散光结构密度大于接近所述侧光LED阵列的散光结构密度。\n\n[0009]优选地，所述导光板的出光面包括左部区域、中部区域及右部区域，所述出光面上的散光结构设置在该出光面的左部区域及右部区域；所述出光面的中部区域正对所述直下LED阵列，所述导光板的出光面的左部区域及右部区域上远离所述侧光LED阵列的散光结构密度大于接近所述侧光LED阵列的散光结构密度。\n\n[0010]优选地，所述散光结构为网点或微突起结构，所述散光结构的横截面至少为山形、球形、三角形、椭圆形或菱形中的一种。\n\n[0011]优选地，所述导光板的出光面或底面上的散光结构延伸至所述直下LED阵列照射区域的边缘内。\n\n[0012]优选地，所述导光板设有散光结构的两端部的厚度大于所述导光板没有设置散光结构的中部的厚度。\n\n[0013]优选地，所述背板的底板设置凹陷部和两支撑部，凹陷部位于两支撑部之间且位置低于支撑部，所述直下LED阵列设置在所述凹陷部上。\n\n[0014]优选地，该背光模组还包括反射片，所述反射片设置在所述支撑部的上表面以及所述直下LED阵列中各LED之间的间隙内。\n\n[0015]本实用新型还提出一种液晶显示器，包括背光模组，所述背光模组为如上所述的背光模组。\n\n[0016]本实用新型提出的一种背光模组及含有该背光模组的液晶显示器，采用直下式与侧光式混合的背光模组，在导光板两端的出光面或底面设置若干用于散射光线的散光结构，将导光板分为三个背光区域，通过散光结构打破光线在导光板内的全反射，侧光LED阵列照亮背光的区域由导光板上散光结构所在区域控制，直下LED阵列照亮背光的区域由LED驱动电路实现其分区控制，从而提高了背光模组的背光亮度的分区显示效果，降低了液晶模组功耗。\n\n附图说明\n\n[0017]图1是本实用新型背光模组第一实施例的结构示意图；\n\n[0018]图2是本实用新型背光模组第二实施例的结构示意图；\n\n[0019]图3是本实用新型背光模组第三实施例的结构示意图。\n\n[0020]为了使本实用新型的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本实用新型进行进一步详细说明。\n\n具体实施方式\n\n[0021]应当理解，此处所描述的具体实施例仅仅用以解释本实用新型，并不用于限定本实用新型。\n\n[0022]本实用新型实施例解决方案主要是：在采用直下式与侧光式混合的背光模组，在导光板两端的出光面或底面设置若干用于散射光线的散光结构，将导光板分为三个背光区域，侧光LED阵列照亮背光的区域由导光板上散光结构所在区域控制，直下LED阵列照亮背光的区域由LED驱动电路实现其分区控制，以提高背光模组的背光亮度的分区显示效果，降低液晶模组功耗。\n\n[0023]如图1所示，图1是本实用新型背光模组第一实施例的结构示意图。本实用新型第一实施例提出一种背光亮度可以分区控制的背光模组，该背光模组为侧光式与直下式构成的混合入光式背光模组，其包括背板1、直下LED阵列5、侧光LED阵列4、反射片3以及导光板2，其中：\n\n[0024]背板1包括底板及自底板四周向上延伸形成的侧板(图中未标出)，底板的中部向下凹陷形成凹陷部，凹陷部的两侧则分别形成支撑部。\n\n[0025]导光板2设置于背板1的底板的上方，直下LED阵列5设置在背板1的底板的凹陷部，具体地，该直下LED阵列5位于导光板2与凹陷部之间，且固定在凹陷部上。\n\n[0026]反射片3设置在背板1的底板的支撑部，用于对光线起反射作用。为了更好的实现对光的反射，在直下LED阵列5中各LED之间的区域上也贴有反射片3。\n\n[0027]导光板2具有上表面、下表面和两侧面，导光板2的上表面为出光面23，下表面为与出光面23相对的底面22，两侧面为导光板2的侧边的入光面21。\n\n[0028]侧光LED阵列4设置在导光板2的两侧，并与导光板2的入光面21相对，该侧光LED阵列4支撑于背板1底板两端的支撑部上。\n\n[0029]本实施例中，在导光板2的两端邻近侧光LED阵列4处的底面22上，设有若干散光结构6。上述散光结构6用于散射光线，打破光线在导光板2内的全反射，使得光线能从导光板2里射出。\n\n[0030]其中，散光结构6可以是网点或微突起结构，其横截面可以为山形、球形、三角形、椭圆形、菱形或者其他能够打破光线在导光板2内全反射的任何形状。\n\n[0031]上述散光结构6的分布特点将导光板2的底面22划分为左部区域221、中部区域222及右部区域223，导光板2底面22的左部区域221和右部区域223为设有散光结构6的区域，导光板2底面22的中部区域222为没有设置散光结构6的区域，该中部区域222正对直下LED阵列5。\n\n[0032]本实施例背光模组的背光亮度可以实现分区控制，其中，侧光LED阵列4照亮背光的区域由导光板底面22的左部区域221和右部区域223上的散光结构6控制，直下LED阵列5照亮背光的区域由LED驱动电路实现其分区控制。\n\n[0033]此外，考虑到光线在导光板2内传播时，随着距离的增加，光强逐渐减弱。对于侧光LED阵列4，在导光板2内靠近侧光LED阵列4的地方，光强比较强，在远离侧光LED阵列4的地方，光强比较弱。如果导光板2底面22的散光结构6在靠近光源与远离光源的地方疏密都一样，则靠近光源的地方射出导光板2的光线比远离光源的地方射出导光板2的光线强，在人眼看来，靠近光源的地方比较亮，远离光源的地方则比较暗。\n\n[0034]由此，本实施例设置导光板2的底面22上的散光结构6的密度分布规则为：在靠近侧光LED阵列4的地方，光强比较强，对应的散光结构6分布密度稀疏，在远离侧光LED阵列4的地方，光强比较弱，对应的散光结构6分布密度密集，这样使得在光线射出导光板2时，在靠近光源和远离光源的地方分布比较均匀，从而提高液晶面板的显示效果。\n\n[0035]另外，本实施例在靠近侧光LED阵列4的导光板2两端的底面22上分布有散光结构6，而在直下LED阵列5的上方对应的导光板2的底面22没有设置散光结构6，此种结构特点中，侧光LED阵列4发出的光所能传递的距离主要和导光板2底面22上的散光结构6的分布有关，在对侧光LED阵列4的照亮区域进行控制时，通过调整导光板2底面22上散光结构6的分布，即可控制侧光LED阵列4光线在导光板2上传递的距离，由此将侧光LED阵列4所发出的光线控制在一定的区域。\n\n[0036]此外，导光板2底面22的网点或者微结构6所在的区域要超过直下LED阵列5最边上LED发出的光所能射到的边缘区域，也就是说，导光板2的底面22上的散光结构6需要延伸至直下LED阵列5照射区域的边缘内。这样，在导光板2上有散光结构6与没有散光结构6的过渡区域则不会存在亮度差。\n\n[0037]对于直下LED阵列5照亮背光区域的分区控制，则由LED驱动电路实现。例如，在播放电影视频时，屏幕的上下两端通常都为常黑，若这两个常黑区域正好对应侧光LED阵列4的作用区域时，此时可以关闭两个侧光LED阵列4，从而节省电能。\n\n[0038]本实施例的上述结构实现了对背光亮度的分区控制，可以降低液晶模组功耗，提高背光模组的背光显示效果。\n\n[0039]如图2所示，图2是本实用新型背光模组第二实施例的结构示意图。本实施例与上述第一实施例相似，其不同之处在于，本实施例中，在导光板32的底面31的左部区域321、中部区域322及右部区域323三个区域中，没有设置散光结构36的中部区域322的那部分导光板32的厚度小于其他两个设有散光结构36的区域321、323的厚度，也就是说，导光板32底面31的中部区域322所在的导光板32的厚度较薄，左部区域321及右部323区域所在的导光板32的厚度较厚，此种设计结构的优点在于，在不影响背光分区显示效果的情况下，可以减轻整个背光模组的重量。\n\n[0040]其他与第一实施例相同。\n\n[0041]如图3所示，图3是本实用新型背光模组第三实施例的结构示意图。本实施例与上述第一实施例相似，均包括侧光LED阵列14、直下LED阵列15以及导光板12等，其不同之处在于，本实施例中，散光结构16不是设置在导光板12的底面，而是在导光板12两端邻近侧光LED阵列14的出光面上设有散光结构16。其他与第一实施例相同。\n\n[0042]需要说明的是，在具体实施过程中，根据实际情况，上述三种实施例可以相互组合实施，都可以到达或更好的达到降低液晶模组功耗、提高背光模组的背光显示效果的目的。\n\n[0043]此外，本实用新型还提出一种液晶显示器，该液晶显示器包括背光模组，该背光模组可以为上述各实施例中所述的背光模组。在此不再赘述。\n\n[0044]本实用新型背光模组及含有该背光模组的液晶显示器，采用直下式与侧光式混合的背光模组，在导光板两端的出光面或底面设置若干散光结构，将导光板分为三个背光区域，通过散光结构打破光线在导光板内的全反射，侧光LED阵列照亮背光的区域由导光板上散光结构所在区域控制，直下LED阵列照亮背光的区域由LED驱动电路实现其分区控制，从而提高了背光模组的背光亮度的分区显示效果，降低了液晶模组功耗。\n\n[0045]此外，本实用新型设置导光板上远离侧光LED阵列的散光结构密度较大，使得侧光LED阵列的光线射出导光板时，在靠近光源和远离光源的地方分布比较均匀，进而提高液晶面板的显示效果。\n\n[0046]另外，本实用新型设置导光板的散光结构所在区域延伸进入直下LED阵列的照射区域，使得导光板有散光结构与没有散光结构的过渡区域不会存在亮度差，提高背光模组的分区显示效果。\n\n[0047]以上所述仅为本实用新型的优选实施例，并非因此限制本实用新型的专利范围，凡是利用本实用新型说明书及附图内容所作的等效结构或流程变换，或直接或间接运用在其它相关的技术领域，均同理包括在本实用新型的专利保护范围内。', '技术领域\n\n[0001]本实用新型涉及液晶显示技术领域，尤其涉及一种背光模组及含有该背光模组的液晶显示器。\n\n背景技术\n\n[0002]目前的液晶显示器包括液晶模组以及为液晶模组中的液晶面板提供背光的背光模组。因为液晶面板本身不发光，因此背光模组的背光功能在于提供足够的亮度和分布均匀的光源给液晶面板，通过液晶面板的运作显示正常的图像。\n\n[0003]但是，现有的背光的液晶模组工作时，其功耗固定，即背光不会随着液晶模组需要显示图像的亮暗而进行亮暗的调节，也就是说背光亮度不会分区显示，因而这种背光结构不利于节能。\n\n[0004]目前也有部分分区显示的背光结构，其通常采用导光板拼接的方式来实现分区显示，但是这种导光板拼接的方式，在拼接缝隙的地方会存在亮度及色度不均的问题。\n\n实用新型内容\n\n[0005]本实用新型的主要目的在于提供一种背光模组及含有该背光模组的液晶显示器，旨在降低液晶模组功耗，提高背光分区显示效果。\n\n[0006]为了达到上述目的，本实用新型提出一种背光模组，包括背板、直下LED阵列、侧光LED阵列以及导光板，所述背板包括底板及侧板，所述导光板位于所述背板的侧板之间及底板上方，所述直下LED阵列设置在所述背板的底板上，且位于所述导光板中部的下方；所述侧光LED阵列设置在所述导光板的两侧，并与所述导光板的入光面相对，所述导光板的两端邻近所述侧光LED阵列处的出光面或底面设有若干用于散射光线的散光结构。\n\n[0007]优选地，所述导光板的底面包括左部区域、中部区域及右部区域，所述导光板的底面的散光结构设置在所述底面的左部区域及右部区域；所述底面的中部区域正对所述直下LED阵列。\n\n[0008]优选地，所述导光板的底面的左部区域及右部区域上远离所述侧光LED阵列的散光结构密度大于接近所述侧光LED阵列的散光结构密度。\n\n[0009]优选地，所述导光板的出光面包括左部区域、中部区域及右部区域，所述出光面上的散光结构设置在该出光面的左部区域及右部区域；所述出光面的中部区域正对所述直下LED阵列，所述导光板的出光面的左部区域及右部区域上远离所述侧光LED阵列的散光结构密度大于接近所述侧光LED阵列的散光结构密度。\n\n[0010]优选地，所述散光结构为网点或微突起结构，所述散光结构的横截面至少为山形、球形、三角形、椭圆形或菱形中的一种。\n\n[0011]优选地，所述导光板的出光面或底面上的散光结构延伸至所述直下LED阵列照射区域的边缘内。\n\n[0012]优选地，所述导光板设有散光结构的两端部的厚度大于所述导光板没有设置散光结构的中部的厚度。\n\n[0013]优选地，所述背板的底板设置凹陷部和两支撑部，凹陷部位于两支撑部之间且位置低于支撑部，所述直下LED阵列设置在所述凹陷部上。\n\n[0014]优选地，该背光模组还包括反射片，所述反射片设置在所述支撑部的上表面以及所述直下LED阵列中各LED之间的间隙内。\n\n[0015]本实用新型还提出一种液晶显示器，包括背光模组，所述背光模组为如上所述的背光模组。\n\n[0016]本实用新型提出的一种背光模组及含有该背光模组的液晶显示器，采用直下式与侧光式混合的背光模组，在导光板两端的出光面或底面设置若干用于散射光线的散光结构，将导光板分为三个背光区域，通过散光结构打破光线在导光板内的全反射，侧光LED阵列照亮背光的区域由导光板上散光结构所在区域控制，直下LED阵列照亮背光的区域由LED驱动电路实现其分区控制，从而提高了背光模组的背光亮度的分区显示效果，降低了液晶模组功耗。\n\n附图说明\n\n[0017]图1是本实用新型背光模组第一实施例的结构示意图；\n\n[0018]图2是本实用新型背光模组第二实施例的结构示意图；\n\n[0019]图3是本实用新型背光模组第三实施例的结构示意图。\n\n[0020]为了使本实用新型的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本实用新型进行进一步详细说明。\n\n具体实施方式\n\n[0021]应当理解，此处所描述的具体实施例仅仅用以解释本实用新型，并不用于限定本实用新型。\n\n[0022]本实用新型实施例解决方案主要是：在采用直下式与侧光式混合的背光模组，在导光板两端的出光面或底面设置若干用于散射光线的散光结构，将导光板分为三个背光区域，侧光LED阵列照亮背光的区域由导光板上散光结构所在区域控制，直下LED阵列照亮背光的区域由LED驱动电路实现其分区控制，以提高背光模组的背光亮度的分区显示效果，降低液晶模组功耗。\n\n[0023]如图1所示，图1是本实用新型背光模组第一实施例的结构示意图。本实用新型第一实施例提出一种背光亮度可以分区控制的背光模组，该背光模组为侧光式与直下式构成的混合入光式背光模组，其包括背板1、直下LED阵列5、侧光LED阵列4、反射片3以及导光板2，其中：\n\n[0024]背板1包括底板及自底板四周向上延伸形成的侧板(图中未标出)，底板的中部向下凹陷形成凹陷部，凹陷部的两侧则分别形成支撑部。\n\n[0025]导光板2设置于背板1的底板的上方，直下LED阵列5设置在背板1的底板的凹陷部，具体地，该直下LED阵列5位于导光板2与凹陷部之间，且固定在凹陷部上。\n\n[0026]反射片3设置在背板1的底板的支撑部，用于对光线起反射作用。为了更好的实现对光的反射，在直下LED阵列5中各LED之间的区域上也贴有反射片3。\n\n[0027]导光板2具有上表面、下表面和两侧面，导光板2的上表面为出光面23，下表面为与出光面23相对的底面22，两侧面为导光板2的侧边的入光面21。\n\n[0028]侧光LED阵列4设置在导光板2的两侧，并与导光板2的入光面21相对，该侧光LED阵列4支撑于背板1底板两端的支撑部上。\n\n[0029]本实施例中，在导光板2的两端邻近侧光LED阵列4处的底面22上，设有若干散光结构6。上述散光结构6用于散射光线，打破光线在导光板2内的全反射，使得光线能从导光板2里射出。\n\n[0030]其中，散光结构6可以是网点或微突起结构，其横截面可以为山形、球形、三角形、椭圆形、菱形或者其他能够打破光线在导光板2内全反射的任何形状。\n\n[0031]上述散光结构6的分布特点将导光板2的底面22划分为左部区域221、中部区域222及右部区域223，导光板2底面22的左部区域221和右部区域223为设有散光结构6的区域，导光板2底面22的中部区域222为没有设置散光结构6的区域，该中部区域222正对直下LED阵列5。\n\n[0032]本实施例背光模组的背光亮度可以实现分区控制，其中，侧光LED阵列4照亮背光的区域由导光板底面22的左部区域221和右部区域223上的散光结构6控制，直下LED阵列5照亮背光的区域由LED驱动电路实现其分区控制。\n\n[0033]此外，考虑到光线在导光板2内传播时，随着距离的增加，光强逐渐减弱。对于侧光LED阵列4，在导光板2内靠近侧光LED阵列4的地方，光强比较强，在远离侧光LED阵列4的地方，光强比较弱。如果导光板2底面22的散光结构6在靠近光源与远离光源的地方疏密都一样，则靠近光源的地方射出导光板2的光线比远离光源的地方射出导光板2的光线强，在人眼看来，靠近光源的地方比较亮，远离光源的地方则比较暗。\n\n[0034]由此，本实施例设置导光板2的底面22上的散光结构6的密度分布规则为：在靠近侧光LED阵列4的地方，光强比较强，对应的散光结构6分布密度稀疏，在远离侧光LED阵列4的地方，光强比较弱，对应的散光结构6分布密度密集，这样使得在光线射出导光板2时，在靠近光源和远离光源的地方分布比较均匀，从而提高液晶面板的显示效果。\n\n[0035]另外，本实施例在靠近侧光LED阵列4的导光板2两端的底面22上分布有散光结构6，而在直下LED阵列5的上方对应的导光板2的底面22没有设置散光结构6，此种结构特点中，侧光LED阵列4发出的光所能传递的距离主要和导光板2底面22上的散光结构6的分布有关，在对侧光LED阵列4的照亮区域进行控制时，通过调整导光板2底面22上散光结构6的分布，即可控制侧光LED阵列4光线在导光板2上传递的距离，由此将侧光LED阵列4所发出的光线控制在一定的区域。\n\n[0036]此外，导光板2底面22的网点或者微结构6所在的区域要超过直下LED阵列5最边上LED发出的光所能射到的边缘区域，也就是说，导光板2的底面22上的散光结构6需要延伸至直下LED阵列5照射区域的边缘内。这样，在导光板2上有散光结构6与没有散光结构6的过渡区域则不会存在亮度差。\n\n[0037]对于直下LED阵列5照亮背光区域的分区控制，则由LED驱动电路实现。例如，在播放电影视频时，屏幕的上下两端通常都为常黑，若这两个常黑区域正好对应侧光LED阵列4的作用区域时，此时可以关闭两个侧光LED阵列4，从而节省电能。\n\n[0038]本实施例的上述结构实现了对背光亮度的分区控制，可以降低液晶模组功耗，提高背光模组的背光显示效果。\n\n[0039]如图2所示，图2是本实用新型背光模组第二实施例的结构示意图。本实施例与上述第一实施例相似，其不同之处在于，本实施例中，在导光板32的底面31的左部区域321、中部区域322及右部区域323三个区域中，没有设置散光结构36的中部区域322的那部分导光板32的厚度小于其他两个设有散光结构36的区域321、323的厚度，也就是说，导光板32底面31的中部区域322所在的导光板32的厚度较薄，左部区域321及右部323区域所在的导光板32的厚度较厚，此种设计结构的优点在于，在不影响背光分区显示效果的情况下，可以减轻整个背光模组的重量。\n\n[0040]其他与第一实施例相同。\n\n[0041]如图3所示，图3是本实用新型背光模组第三实施例的结构示意图。本实施例与上述第一实施例相似，均包括侧光LED阵列14、直下LED阵列15以及导光板12等，其不同之处在于，本实施例中，散光结构16不是设置在导光板12的底面，而是在导光板12两端邻近侧光LED阵列14的出光面上设有散光结构16。其他与第一实施例相同。\n\n[0042]需要说明的是，在具体实施过程中，根据实际情况，上述三种实施例可以相互组合实施，都可以到达或更好的达到降低液晶模组功耗、提高背光模组的背光显示效果的目的。\n\n[0043]此外，本实用新型还提出一种液晶显示器，该液晶显示器包括背光模组，该背光模组可以为上述各实施例中所述的背光模组。在此不再赘述。\n\n[0044]本实用新型背光模组及含有该背光模组的液晶显示器，采用直下式与侧光式混合的背光模组，在导光板两端的出光面或底面设置若干散光结构，将导光板分为三个背光区域，通过散光结构打破光线在导光板内的全反射，侧光LED阵列照亮背光的区域由导光板上散光结构所在区域控制，直下LED阵列照亮背光的区域由LED驱动电路实现其分区控制，从而提高了背光模组的背光亮度的分区显示效果，降低了液晶模组功耗。\n\n[0045]此外，本实用新型设置导光板上远离侧光LED阵列的散光结构密度较大，使得侧光LED阵列的光线射出导光板时，在靠近光源和远离光源的地方分布比较均匀，进而提高液晶面板的显示效果。\n\n[0046]另外，本实用新型设置导光板的散光结构所在区域延伸进入直下LED阵列的照射区域，使得导光板有散光结构与没有散光结构的过渡区域不会存在亮度差，提高背光模组的分区显示效果。\n\n[0047]以上所述仅为本实用新型的优选实施例，并非因此限制本实用新型的专利范围，凡是利用本实用新型说明书及附图内容所作的等效结构或流程变换，或直接或间接运用在其它相关的技术领域，均同理包括在本实用新型的专利保护范围内。');
INSERT INTO `os_patent_instruction_text` VALUES (10999, 24053, '技术领域\n\n[0001]本实用新型涉及一种反射式液晶显示器，属于液晶显示器制造技术领域。\n\n背景技术\n\n[0002]现有液晶显示器中，由于反射式液晶显示器(如图1所示)在高亮环境条件下相比透射式液晶显示器具有功耗低，图像对比度高等优点，因此反射式液晶显示器得到了范围应用。同时，反射式液晶显示器在户外显示中还具有节能环保的特点。但是，由于现有反射式全彩液晶显示器要实现全彩化，需要在液晶面板中加入红绿蓝三色绿光膜，因此导致光液晶显示器制程增加，成本增高。\n\n实用新型内容\n\n[0003]针对上述问题，本实用新型的目的是提供一种反射式液晶显示器。能够提高光能利用率，制程简单，且能够实现全彩显示。\n\n[0004]为实现上述目的，本实用新型采取以下技术方案：一种反射式液晶显示器，其特征在于，包括液晶面板，所述液晶面板的第一侧紧密贴合偏光片的第二侧，在所述偏光片第一侧的外部设置有用于提供均匀白光的前置光源，在所述液晶面板第二侧的外部设置有微纳结构层，所述微纳结构层反射来自所述前置光源的白光且将来自所述前置光源的白光转换成红、绿和蓝三色光。\n\n[0005]所述微纳结构层包括微纳结构反射板，在所述微纳结构反射板上靠近所述液晶面板的一侧间隔设置有多个金属突起，各所述金属突起反射来自所述前置光源的白光且将来自所述前置光源的白光转换成红、绿和蓝三色光。\n\n[0006]多个所述金属突起呈等间隔布置在所述微纳结构反射板上，每一所述金属突起均设置成条状。\n\n[0007]所述微纳结构反射板采用铝、金、银、铜、锡或铂制成。\n\n[0008]各所述金属突起均采用铝、金、银、铜、锡或铂制成。\n\n[0009]每一所述金属突起底边的宽度与相邻两所述金属突起之间的距离的比值均为10～90％。\n\n[0010]各所述金属突起的截面均设置成梯形、三角形或矩形。\n\n[0011]所述前置光源包括导光板，在所述导光板上朝向所述偏光片的端面设置有用于提供均匀白光的准直发光二极管，所述准直发光二极管发出白光的准直光斑锥角小于等于5度。\n\n[0012]所述准直发光二极管发出的白光与所述液晶面板法线的夹角为45～70度。\n\n[0013]所述红光的波长为600～780纳米；所述绿光的波长为500～570纳米；所述蓝光的波长为430～470纳米。\n\n[0014]本实用新型由于采取以上技术方案，其具有以下优点：1、本实用新型设置了微纳结构层，在微纳结构层上间隔设置有多个金属突起，能够快速地将入射到微纳结构层的前置光源转换成不同角度出射的红、绿和蓝三色光，可以减少液晶面板的彩膜成本和制备流程，提升了产能，同时提高了光能的利用率，节省能耗。2、本实用新型多个金属突起呈等间隔布置，且每一金属突起均设置成条状，在各金属突起的作用下，能够实现出射的红、绿和蓝三色光呈阵列化布置，阵列化布置的红、绿和蓝三色光通过液晶面板对应的红、绿和蓝三色区域的液晶像素电压控制可以实现图像的彩色化。3、本实用新型各金属突起均采用铝、金、银、铜、锡、铂等金属材料制成，能够提高来自前置光源的白光的反射效果，同时微纳结构反射板采用铝、金、银、铜、锡、铂等金属材料制成，进一步提高了来自前置光源的白光的反射效果。4、本实用新型各金属突起的截面均设置成梯形、三角形或矩形，能够提高来自前置光源的白光的反射效果。5、本实用新型前置光源包括导光板，在导光板上朝向偏光片的端面设置有用于提供均匀白光的准直发光二极管，准直发光二极管发出白光的准直光斑锥角小于等于5度，降低了白光的成本，同时可以降低液晶显示器的成本。6、本实用新型准直LED发出的白光与液晶面板法线的夹角为45～70度，可以实现在特定角度下才能看到液晶显示器的彩色图像，从而能够防偷窥。\n\n[0015]本实用新型的其它特征和优点将在随后的说明书中阐述，并且，部分的从说明书中变得显而易见，或者通过实施本实用新型而了解。本实用新型的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。\n\n附图说明\n\n[0016]为了更清楚的说明本实用新型实施例中的技术方案，下面将对实施例描述中所需要的附图做简单的介绍：\n\n[0017]图1是已有技术反射式液晶显示器的结构示意图；\n\n[0018]图2是本实用新型的结构示意图；\n\n[0019]图3是本实用新型微纳结构层的局部结构示意图；\n\n[0020]图4是本实用新型金属突起出射红、绿和蓝三色光的仿真结构示意图；\n\n[0021]图5是本实用新型红、绿和蓝三色光波长与相应衍射率的结构示意图。\n\n具体实施方式\n\n[0022]下面结合附图和实施例对本实用新型进行详细的描述。\n\n[0023]如图2所示，本实用新型提出的反射式液晶显示器，它包括液晶面板1，液晶面板1的第一侧紧密贴合偏光片2的第二侧，在偏光片2第一侧的外部设置有用于提供均匀白光的前置光源3。在液晶面板1第二侧的外部设置有微纳结构(微米或纳米结构)层4(如图3所示)，微纳结构层4能够反射来自前置光源3的白光且将来自前置光源3的白光转换成红光A、绿光B和蓝光C(如图4所示)。\n\n[0024]上述实施例中，如图2、图3所示，微纳结构层4包括微纳结构反射板41，在微纳结构反射板41上靠近液晶面板1的一侧间隔设置有多个金属突起42。当来自前置光源3的白光入射到微纳结构层4时，在金属突起42的作用下，能够将来自前置光源3的白光转换成不同角度出射的红光A、绿光B和蓝光C(如图4所示)。\n\n[0025]上述实施例中，多个金属突起42呈等间隔布置在微纳结构反射板41上，且每一金属突起42均设置成条状。在各金属突起42的作用下，能够实现出射的红光A、绿光B和蓝光C呈阵列化布置(如图4所示)，阵列化布置的红光A、绿光B和蓝光C通过液晶面板1对应的红、绿和蓝三色区域的液晶像素电压控制可以实现图像的彩色化。\n\n[0026]上述实施例中，相邻两金属突起42之间的距离均为0.5～5微米。\n\n[0027]上述实施例中，各金属突起42的高度均为0.1～3微米。\n\n[0028]上述实施例中，微纳结构反射板41可以采用铝、金、银、铜、锡、铂等金属材料制成，以便于提高来自前置光源3的白光的反射效果。\n\n[0029]上述实施例中，各金属突起42均可以采用铝、金、银、铜、锡、铂等金属材料制成，以便于提高来自前置光源3的白光的反射效果。\n\n[0030]上述实施例中，每一金属突起42底边的宽度与相邻两金属突起42之间的距离的比值(微纳结构层4的填充率)均为10～90％。\n\n[0031]上述实施例中，各金属突起42的截面均设置成梯形、三角形或矩形。在一个优选的实施例中，如图2、图3所示，各金属突起42的截面均设置成梯形，且梯形的两底角分别为45度和60度，以便于提高来自前置光源3的白光的反射效果。\n\n[0032]上述实施例中，前置光源3可以是面发光系统。前置光源3包括导光板31，在导光板31上朝向偏光片2的端面设置有用于提供均匀白光的准直LED(发光二极管)，准直LED发出白光的准直光斑锥角小于等于5度，准直LED降低了白光的成本。使用时，准直LED发出白光，该白光通过准直透镜，从而产生光强布置均匀且准直度高的白光。另外，由于准直LED产生的噪声少，不需要屏蔽和减低噪声的电路，因此可以降低液晶显示器的成本。\n\n[0033]上述实施例中，准直LED发出的白光与液晶面板1法线的夹角大于0小于90度。在一个优选的实施例中，准直LED发出的白光与液晶面板1法线的夹角为45～70度，能够实现在特定角度下看到液晶显示器的彩色图像，从而能够防偷窥。\n\n[0034]上述实施例中，导光板31为微结构导光板(由微米或纳米材料制成)。\n\n[0035]上述实施例中，红光A的波长为600～780纳米；绿光B的波长为500～570纳米；蓝光C的波长为430～470纳米。\n\n[0036]如图2所示，使用时，本实用新型的前置光源3依次通过偏光片2、液晶面板1照射在微纳结构层4上，在各金属突起42的作用下，能够实现出射的红光A、绿光B和蓝光C呈阵列化布置(如图4所示)，阵列化布置的红光A、绿光B和蓝光C通过液晶面板1对应的红、绿和蓝三色区域的液晶像素电压控制实现图像的彩色化。同时在微纳结构反射板41(如图3所示)的作用下，能够提高准直LED发出的白光的反射效果。同时在偏光片2的作用下，实现液晶面板1的呈像。\n\n[0037]下面列举一具体实施例\n\n[0038]采用RSOFT仿真软件建立液晶面板1、偏光片2、前置光源3和微纳结构层4模型。其中，准直LED发出的白光与液晶面板1法线的夹角为62度，微纳结构层4中微纳结构反射板41和各金属突起42均采用铝材料制成，且各金属突起42的截面均设置成非等腰梯形，每一金属突起42的下底宽度为1.72微米，上底宽度为0.68微米，高为0.696微米，每一金属突起42的两底角分别为45度和60度(如图3所示)，同时两相邻两金属突起42之间的距离均为2.66微米，获取金属突起42出射的红光A、绿光B和蓝光C的仿真图(如图4所示)，以及红光A、绿光B和蓝光C波长与相应衍射率之间的关系(如图5所示)。如图5所示，(0，0)表示中央衍射条纹，(-1，0)表示中央衍射条纹左边第一衍射条纹，(1，0)表示中央条纹右边第一衍射条纹，D表示全反射曲线。在没有使用彩膜的情况下，本实用新型依然能够实现液晶显示器的全彩显示。\n\n[0039]虽然本实用新型所公开的实施方式如上，但所述的内容只是为了便于理解本实用新型而采用的实施方式，并非用以限定本实用新型。任何本实用新型所属技术领域内的技术人员，在不脱离本实用新型所公开的精神和范围的前提下，可以在实施的形式上及细节上作任何的修改与变化，但本实用新型的专利保护范围，仍须以所附的权利要求书所界定的范围为准。', '技术领域\n\n[0001]本实用新型涉及一种反射式液晶显示器，属于液晶显示器制造技术领域。\n\n背景技术\n\n[0002]现有液晶显示器中，由于反射式液晶显示器(如图1所示)在高亮环境条件下相比透射式液晶显示器具有功耗低，图像对比度高等优点，因此反射式液晶显示器得到了范围应用。同时，反射式液晶显示器在户外显示中还具有节能环保的特点。但是，由于现有反射式全彩液晶显示器要实现全彩化，需要在液晶面板中加入红绿蓝三色绿光膜，因此导致光液晶显示器制程增加，成本增高。\n\n实用新型内容\n\n[0003]针对上述问题，本实用新型的目的是提供一种反射式液晶显示器。能够提高光能利用率，制程简单，且能够实现全彩显示。\n\n[0004]为实现上述目的，本实用新型采取以下技术方案：一种反射式液晶显示器，其特征在于，包括液晶面板，所述液晶面板的第一侧紧密贴合偏光片的第二侧，在所述偏光片第一侧的外部设置有用于提供均匀白光的前置光源，在所述液晶面板第二侧的外部设置有微纳结构层，所述微纳结构层反射来自所述前置光源的白光且将来自所述前置光源的白光转换成红、绿和蓝三色光。\n\n[0005]所述微纳结构层包括微纳结构反射板，在所述微纳结构反射板上靠近所述液晶面板的一侧间隔设置有多个金属突起，各所述金属突起反射来自所述前置光源的白光且将来自所述前置光源的白光转换成红、绿和蓝三色光。\n\n[0006]多个所述金属突起呈等间隔布置在所述微纳结构反射板上，每一所述金属突起均设置成条状。\n\n[0007]所述微纳结构反射板采用铝、金、银、铜、锡或铂制成。\n\n[0008]各所述金属突起均采用铝、金、银、铜、锡或铂制成。\n\n[0009]每一所述金属突起底边的宽度与相邻两所述金属突起之间的距离的比值均为10～90％。\n\n[0010]各所述金属突起的截面均设置成梯形、三角形或矩形。\n\n[0011]所述前置光源包括导光板，在所述导光板上朝向所述偏光片的端面设置有用于提供均匀白光的准直发光二极管，所述准直发光二极管发出白光的准直光斑锥角小于等于5度。\n\n[0012]所述准直发光二极管发出的白光与所述液晶面板法线的夹角为45～70度。\n\n[0013]所述红光的波长为600～780纳米；所述绿光的波长为500～570纳米；所述蓝光的波长为430～470纳米。\n\n[0014]本实用新型由于采取以上技术方案，其具有以下优点：1、本实用新型设置了微纳结构层，在微纳结构层上间隔设置有多个金属突起，能够快速地将入射到微纳结构层的前置光源转换成不同角度出射的红、绿和蓝三色光，可以减少液晶面板的彩膜成本和制备流程，提升了产能，同时提高了光能的利用率，节省能耗。2、本实用新型多个金属突起呈等间隔布置，且每一金属突起均设置成条状，在各金属突起的作用下，能够实现出射的红、绿和蓝三色光呈阵列化布置，阵列化布置的红、绿和蓝三色光通过液晶面板对应的红、绿和蓝三色区域的液晶像素电压控制可以实现图像的彩色化。3、本实用新型各金属突起均采用铝、金、银、铜、锡、铂等金属材料制成，能够提高来自前置光源的白光的反射效果，同时微纳结构反射板采用铝、金、银、铜、锡、铂等金属材料制成，进一步提高了来自前置光源的白光的反射效果。4、本实用新型各金属突起的截面均设置成梯形、三角形或矩形，能够提高来自前置光源的白光的反射效果。5、本实用新型前置光源包括导光板，在导光板上朝向偏光片的端面设置有用于提供均匀白光的准直发光二极管，准直发光二极管发出白光的准直光斑锥角小于等于5度，降低了白光的成本，同时可以降低液晶显示器的成本。6、本实用新型准直LED发出的白光与液晶面板法线的夹角为45～70度，可以实现在特定角度下才能看到液晶显示器的彩色图像，从而能够防偷窥。\n\n[0015]本实用新型的其它特征和优点将在随后的说明书中阐述，并且，部分的从说明书中变得显而易见，或者通过实施本实用新型而了解。本实用新型的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。\n\n附图说明\n\n[0016]为了更清楚的说明本实用新型实施例中的技术方案，下面将对实施例描述中所需要的附图做简单的介绍：\n\n[0017]图1是已有技术反射式液晶显示器的结构示意图；\n\n[0018]图2是本实用新型的结构示意图；\n\n[0019]图3是本实用新型微纳结构层的局部结构示意图；\n\n[0020]图4是本实用新型金属突起出射红、绿和蓝三色光的仿真结构示意图；\n\n[0021]图5是本实用新型红、绿和蓝三色光波长与相应衍射率的结构示意图。\n\n具体实施方式\n\n[0022]下面结合附图和实施例对本实用新型进行详细的描述。\n\n[0023]如图2所示，本实用新型提出的反射式液晶显示器，它包括液晶面板1，液晶面板1的第一侧紧密贴合偏光片2的第二侧，在偏光片2第一侧的外部设置有用于提供均匀白光的前置光源3。在液晶面板1第二侧的外部设置有微纳结构(微米或纳米结构)层4(如图3所示)，微纳结构层4能够反射来自前置光源3的白光且将来自前置光源3的白光转换成红光A、绿光B和蓝光C(如图4所示)。\n\n[0024]上述实施例中，如图2、图3所示，微纳结构层4包括微纳结构反射板41，在微纳结构反射板41上靠近液晶面板1的一侧间隔设置有多个金属突起42。当来自前置光源3的白光入射到微纳结构层4时，在金属突起42的作用下，能够将来自前置光源3的白光转换成不同角度出射的红光A、绿光B和蓝光C(如图4所示)。\n\n[0025]上述实施例中，多个金属突起42呈等间隔布置在微纳结构反射板41上，且每一金属突起42均设置成条状。在各金属突起42的作用下，能够实现出射的红光A、绿光B和蓝光C呈阵列化布置(如图4所示)，阵列化布置的红光A、绿光B和蓝光C通过液晶面板1对应的红、绿和蓝三色区域的液晶像素电压控制可以实现图像的彩色化。\n\n[0026]上述实施例中，相邻两金属突起42之间的距离均为0.5～5微米。\n\n[0027]上述实施例中，各金属突起42的高度均为0.1～3微米。\n\n[0028]上述实施例中，微纳结构反射板41可以采用铝、金、银、铜、锡、铂等金属材料制成，以便于提高来自前置光源3的白光的反射效果。\n\n[0029]上述实施例中，各金属突起42均可以采用铝、金、银、铜、锡、铂等金属材料制成，以便于提高来自前置光源3的白光的反射效果。\n\n[0030]上述实施例中，每一金属突起42底边的宽度与相邻两金属突起42之间的距离的比值(微纳结构层4的填充率)均为10～90％。\n\n[0031]上述实施例中，各金属突起42的截面均设置成梯形、三角形或矩形。在一个优选的实施例中，如图2、图3所示，各金属突起42的截面均设置成梯形，且梯形的两底角分别为45度和60度，以便于提高来自前置光源3的白光的反射效果。\n\n[0032]上述实施例中，前置光源3可以是面发光系统。前置光源3包括导光板31，在导光板31上朝向偏光片2的端面设置有用于提供均匀白光的准直LED(发光二极管)，准直LED发出白光的准直光斑锥角小于等于5度，准直LED降低了白光的成本。使用时，准直LED发出白光，该白光通过准直透镜，从而产生光强布置均匀且准直度高的白光。另外，由于准直LED产生的噪声少，不需要屏蔽和减低噪声的电路，因此可以降低液晶显示器的成本。\n\n[0033]上述实施例中，准直LED发出的白光与液晶面板1法线的夹角大于0小于90度。在一个优选的实施例中，准直LED发出的白光与液晶面板1法线的夹角为45～70度，能够实现在特定角度下看到液晶显示器的彩色图像，从而能够防偷窥。\n\n[0034]上述实施例中，导光板31为微结构导光板(由微米或纳米材料制成)。\n\n[0035]上述实施例中，红光A的波长为600～780纳米；绿光B的波长为500～570纳米；蓝光C的波长为430～470纳米。\n\n[0036]如图2所示，使用时，本实用新型的前置光源3依次通过偏光片2、液晶面板1照射在微纳结构层4上，在各金属突起42的作用下，能够实现出射的红光A、绿光B和蓝光C呈阵列化布置(如图4所示)，阵列化布置的红光A、绿光B和蓝光C通过液晶面板1对应的红、绿和蓝三色区域的液晶像素电压控制实现图像的彩色化。同时在微纳结构反射板41(如图3所示)的作用下，能够提高准直LED发出的白光的反射效果。同时在偏光片2的作用下，实现液晶面板1的呈像。\n\n[0037]下面列举一具体实施例\n\n[0038]采用RSOFT仿真软件建立液晶面板1、偏光片2、前置光源3和微纳结构层4模型。其中，准直LED发出的白光与液晶面板1法线的夹角为62度，微纳结构层4中微纳结构反射板41和各金属突起42均采用铝材料制成，且各金属突起42的截面均设置成非等腰梯形，每一金属突起42的下底宽度为1.72微米，上底宽度为0.68微米，高为0.696微米，每一金属突起42的两底角分别为45度和60度(如图3所示)，同时两相邻两金属突起42之间的距离均为2.66微米，获取金属突起42出射的红光A、绿光B和蓝光C的仿真图(如图4所示)，以及红光A、绿光B和蓝光C波长与相应衍射率之间的关系(如图5所示)。如图5所示，(0，0)表示中央衍射条纹，(-1，0)表示中央衍射条纹左边第一衍射条纹，(1，0)表示中央条纹右边第一衍射条纹，D表示全反射曲线。在没有使用彩膜的情况下，本实用新型依然能够实现液晶显示器的全彩显示。\n\n[0039]虽然本实用新型所公开的实施方式如上，但所述的内容只是为了便于理解本实用新型而采用的实施方式，并非用以限定本实用新型。任何本实用新型所属技术领域内的技术人员，在不脱离本实用新型所公开的精神和范围的前提下，可以在实施的形式上及细节上作任何的修改与变化，但本实用新型的专利保护范围，仍须以所附的权利要求书所界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (11000, 24054, '技术领域\n\n[0001]本揭示涉及液晶显示技术领域，尤其涉及一种发光二极管及使用所述发光二极管的背光模组，保证了背光模组的亮度均匀性。\n\n背景技术\n\n[0002]随着可穿戴应用设备如智能眼镜、智能手表等设备逐渐兴起，显示工艺对可挠曲显示器件的需求也不断增加。有机发光二极管显示器件(Organic Light EmittingDisplay，OLED)具有自发光不需背光源、厚度薄、视角广、反应速度快等特点，从而具有可挠曲显示的天然优势。面对柔性OLED的竞争，传统的液晶显示技术也逐渐采用柔性衬底，朝向柔性、曲面等方向进行突破，由此可见，柔性、曲面显示技术的时代即将来临。\n\n[0003]直下式背光模组具有窄边框的优势，在大尺寸显示领域得到广泛的应用，但是面临着厚度增加的问题。采用小尺寸的微发光二极管(mini light emitting diode，miniLED)以更小的间距进行排列可以获得较小的混光距离(避免近光处的hotspot现象)，为小尺寸直下式背光模块实现轻、薄、窄提供更大的可能性。直下式背光模块由于采用大量的发光二极管构成阵列，发光二极管本身及发光二极管的焊垫本身会构成面积比例较大的低反射体，发光二极管与发光二极管之间通常会采用高反射率的白油或者其他高反射材料覆盖，所述高反射材料的材料本身反射率为较低的70-90％，因而从整体反射效率仅能达成大约80％左右，远低于侧入式背光模组中所使用的反射片能达成接近100％的反射率，因而导致整体光效较低从而影响了直下式背光模组的亮度与功耗水准，通常会采用较厚的高反射层以保证反射率。\n\n[0004]如图1所示，现有的背光模组中的驱动基板1及单颗微发光二极管2结构中，驱动基板1的焊垫(未图示)与微发光二极管2的p/n电极(未图示)连接，微发光二极管2的四周为高反射层结构，其厚度通常为10微米-30微米。微发光二极管2的p/n电极通过导电锡膏3或者银浆等介质与驱动基板1的焊垫接触。但是导电锡膏3通常是通过涂覆工艺制备的，涂覆完成后处于凝胶状态下具有一定的流动性与表面张力，因而会形成类似“小山峰”形貌，当微发光二极管2通过固晶工艺与导电锡膏3接触后，微发光二极管2因尺寸过小容易在导电锡膏3粘附力的作用下出现倾斜，如图1所示，从而影响到微发光二极管2的光反射状态，使得微发光二极管2在光学上呈现倾斜相关的亮、暗不均现象，并且由于驱动基板1的焊垫面积过小，难以通过控制导电锡膏2的状态来避免上述现象。\n\n[0005]因此，有必要提供一种发光二极管及使用所述发光二极管的背光模组，解决传统微发光二极管及其构成的直下式背光模组因焊垫及导电锡膏的状态与厚度所导致的面内亮度不均问题。\n\n发明内容\n\n[0006]为了解决上述技术问题，本揭示采用覆晶(flip-chip)电极结构，将P电极与N电极的结构增厚，并通过沉积结合低熔点金属构成的金属衬垫来与驱动基板焊垫的金属共融导通，所述共融导通方式有效避免了传统锡膏及银浆等使发光二极管黏结于驱动基板的方式所造成微发光二极管的倾斜问题，保证了背光模块整面的亮度均匀性，同时P电极与N电极的增厚电极设计保证了所述微发光二极管的有源区仍然能够高于设置于微发光二极管两侧的反射层之上，从而能够保证高亮度背光模块光效。\n\n[0007]为了达到上述目的，本揭示提供一种发光二极管，包括：一基板；一第一半导体层，设置于所述基板上；一发光层，设置于所述第一半导体层的第一部分；一第二半导体层，设置于所述发光层上；一第一电极，设置于所述第一半导体层的第二部分上，所述第一部分与所述第二部分不重迭；以及一第二电极，设置于所述第二半导体层上；其中所述第一电极的厚度大于所述第二电极的厚度。\n\n[0008]根据本文描述的发光二极管的一实施例，所述第一电极与所述第二电极分别具有一厚度为介于10微米至30微米之间的一范围内。\n\n[0009]根据本文描述的发光二极管的一实施例，所述第一电极的一表面与所述第二电极的一表面位于同一水平高度。\n\n[0010]根据本文描述的发光二极管的一实施例，所述第一电极与所述第二电极选自由钛、铝、银、金、铜或其组成的合金中的至少一种。\n\n[0011]根据本文描述的发光二极管的一实施例，所述第一电极的表面设置一第一金属衬垫，所述第二电极的表面设置一第二金属衬垫，所述第一金属衬垫与所述第二金属衬垫为低熔点金属。\n\n[0012]为了达到上述目的，本揭示另提供一种背光模组，其包含以上所述的发光二极管。本揭示的背光模组包括：一驱动基板；多个发光二极管，阵列设置于所述驱动基板上，所述发光二极管包括:一基板；一第一半导体层，设置于所述基板上；一发光层，设置于所述第一半导体层的第一部分；一第二半导体层，设置于所述发光层上；一第一电极，设置于所述第一半导体层的第二部分上，所述第一部分与所述第二部分不重迭；以及一第二电极，设置于所述第二半导体层上；其中所述第一电极的厚度大于所述第二电极的厚度；以及多个反射块，分别设置于相邻两发光二极管之间；其中所述发光层与所述驱动基板间的一间距大于所述反射块的一厚度。\n\n[0013]根据本文描述的背光模组的一实施例，所述发光二极管为一覆晶式芯片，所述第一电极通过一第一金属衬垫电性连接至所述驱动基板上的第一焊垫，且所述第二电极通过该一第二金属衬垫电性连接至所述驱动基板的第二焊垫。\n\n[0014]根据本文描述的背光模组的一实施例，所述第一电极与所述第二电极分别具有一厚度为介于10微米至30微米之间的一范围内。\n\n[0015]根据本文描述的背光模组的一实施例，所述第一电极的厚度大于所述第二电极的厚度。\n\n[0016]根据本文描述的背光模组的一实施例，相邻两所述发光二极管间的一间距为介于100微米至1000微米的一范围。\n\n[0017]根据本文描述的背光模组的一实施例，所述第一电极与所述第二电极选自由钛、铝、银、金、铜或其组成的合金中的至少一种。\n\n[0018]根据本文描述的背光模组的一实施例，所述第一电极的一表面与所述第二电极的一表面位于同一水平高度。\n\n[0019]根据本文描述的背光模组的一实施例，所述背光模组更包括一光学膜片组，所述光学膜片组包括依序设置于所述多个发光二极管以及所述多个反射块上的一光学膜片层、一扩散膜层与一增亮膜片层。\n\n[0020]本揭示提供的发光二极管及背光模组，改良了现有发光二极管结构的设计，将发光二极管中用来与背光模块的驱动基板上焊垫黏接的P电极与N电极的结构增厚，即增加P电极与N电极的高度，并使增厚的P电极与N电极维持在同一水平高度，并在增厚的P电极与N电极表面分别设置一金属衬垫用以与驱动基板上焊垫实现金属共融导通，从而有效避免了传统锡膏及银浆等方式造成的发光二极管倾斜问题，保证了背光模块整面的亮度均匀性，同时增厚的P电极与N电极设计保证了所述发光二极管的发光层仍然能够在设置于相邻两发光二极管之间的较厚(10微米至30微米)的反射块之上，从而对于五面发光的微发光二极管的能够发挥最佳的光反射作用，因而能够保证高亮度背光模块的光效。\n\n附图说明\n\n[0021]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0022]图1为现有背光模组结构剖面示意图。\n\n[0023]图2为本揭示发光二极管结构剖面示意图。\n\n[0024]图3为本揭示发光二极管设置于一驱动基板的结构示意图。\n\n[0025]图4为本揭示包含所述发光二极管的背光模组示意图。\n\n具体实施方式\n\n[0026]以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。\n\n[0027]下面结合附图详细本揭示实施例的实现过程。\n\n[0028]请一并参阅图2与图3，其为本揭示的发光二极管100，包括：一基板10、一第一半导体层20、一发光层30以及一第二半导体层40。所述第一半导体层20所述设置于所述基板10上，所述发光层30设置于所述第一半导体层20的第一部分201上，所述第二半导体层40设置于所述发光层30上，一第一电极50设置于所述第一半导体层20的第二部分202上，所述第一部分201与所述第二部分202不重迭，一第二电极60设置于所述第二半导体层40上。其中所述第一电极50的厚度大于所述第二电极60的厚度。\n\n[0029]其中所述基板10可以是柔性FPC板，也可以为PCB板。对于所述基板10，可以使用任何形式的基板而不受限制，只要所述基板10允许发光结构设置在其上。在某些示例性实施例中，所述基板10可为蓝宝石基底、SiC基底、尖晶石基底、Si基底或氮化镓基底。在某些示例性实施例中，所述基板10可具有形成于其上表面上的预定图案，类似于图案化的蓝宝石基底(patterned sapphire substrate,PPS)。\n\n[0030]每个所述发光二极管100可以但不限于为蓝光芯片，又称为次毫米发光二极管，亦可应用于紫外、红光、绿光、白光、红外二极管等，此处不做赘述。并且所述多个发光二极管100采用阵列式排列设置，通过减小相邻两发光二极管100之间的中心间距来实现降低混光距离与后续所制成的背光模组的厚度以满足小尺寸背光模组(小于1毫米)需求。小尺寸的所述发光二极管100具有一宽度L，如图3所示，其宽度L在100微米至600微米间的一范围。相邻两发光二极管之间的间距为100微米至1000微米。\n\n[0031]其中所述第一半导体层20为N型半导体层，而所述第二半导体层40相对的为P型半导体层，详细而言，所述第一半导体层20为N型氮化镓(GaN)层，而所述第二半导体层40为P型氮化镓层。在部分实施例中，第一半导体层20与第二半导体层40中可以包括III-V类化合物半导体，例如，(Al,Ga,In)N的氮化物类半导体。第一半导体层20可以包括掺杂有诸如Si的n型掺杂剂的n型半导体层，并且第二半导体层40可以包括掺杂有诸如Mg的p型掺杂剂的p型半导体层。所述发光层30为多重量子井层(Multiple Quantum Well,MQW)。\n\n[0032]如图2与图3所示，所述发光二极管100为覆晶共面电极堆叠结构，即所述发光二极管100为一覆晶式芯片。发光二极管100的发光层30设置于所述第一半导体层20的第一部分201上，并且裸露出第一半导体层20的第二部分202，第一部分201与第二部分202并不重迭且第一部分201邻接于第二部分202设置，第二半导体层40设置于发光层30上。尽管在图2中未示出，所述发光二极管100还可包括形成于所述基板10与所述第一半导体层20之间的一缓冲层。\n\n[0033]而所述第一电极50与所述第二电极60选自由钛、铝、银、金、铜或其组成的合金中的至少一种。根据不同的实施例，所述第一电极50的表面设置一第一金属衬垫51，所述第二电极60的表面设置一第二金属衬垫61，所述第一金属衬垫51与所述第二金属衬垫61为低熔点金属，例如熔点在摄氏90～450度之间，通常为锡的合金或为镧(ln)系元素。\n\n[0034]另外，所述第一电极50与所述第二电极60分别具有一厚度为介于10微米-30微米之间的一范围内。更进一步的说，所述第一电极50具有一厚度T1，所述第二电极60具有一厚度T2，所述第二半导体层40具有一厚度T3，以及所述发光层30具有一厚度T4，在一实施例中，T1＝T2+T3+T4，使得所述第一电极50的一表面与所述第二电极60的一表面位于同一水平高度，从而使所述发光二极管100覆晶设置于一背光模块200的一驱动基板70上时(如图4所示)，可以维持所述发光二极管100呈现稳定水平状态而不会产生发光二极管倾斜的问题。更详细的说，所述发光二极管100通过固晶工艺与驱动基板上的第一焊垫71及第二焊垫72连接，然后通过加热方式使得低熔点的所述第一金属衬垫51及第二金属衬垫61分别与第一焊垫71及第二焊垫72产生共融进而与所述第一焊垫71及第二焊垫72紧密连接，在降温过程中所述发光二极管100的所述第一电极50与所述第二电极60与所述第一焊垫71及第二焊垫72形成稳固的电性连接。所述第一电极50与所述第二电极60通过沉积及刻蚀工艺制备，因而可以保证所述第一电极50与所述第二电极60的表面的平整性，因而有效避免由于上述锡膏及银浆所导致的发光二极管倾斜问题。\n\n[0035]另外，本揭示图4另提供包含所述发光二极管100的背光模组200，使得本揭示实施例的背光模组结构在实际应用时，例如应用于屏幕显示器时保证了整面的亮度均匀性，提升显示质量。\n\n[0036]如图4所示，本揭示的背光模组200包括：一驱动基板70；多个发光二极管100，阵列设置于所述驱动基板70上，所述发光二极管100包括:一基板10、一第一半导体层20、一发光层30以及一第二半导体层40。所述第一半导体层20所述设置于所述基板10上，所述发光层30设置于所述第一半导体层20的第一部分201，所述第二半导体层40设置于所述发光层30上，一第一电极50设置于所述第一半导体层20的第二部分202上，所述第一部分201与所述第二部分202不重迭，一第二电极60设置于所述第二半导体层40上。其中所述第一电极50的厚度大于所述第二电极60的厚度，多个反射块300分别设置于相邻两发光二极管100之间。\n\n[0037]此外，所述背光模组200更包括一光学膜片组210，所述光学膜片组210包括依序设置于所述多个发光二极管100以及所述多个反射块300上的一光学膜片层211、一扩散膜层212与一增亮膜片层213。所述光学膜片层211以膜片的形式存在，所述光学膜片层211另一种优选方式为直接通过涂布的方式热压固定于所述发光二极管表面。所述光学膜片层211包含荧光粉颗粒和散射粒子，优选为包含量子点粒子等。\n\n[0038]同前所述，所述发光二极管100为一覆晶式芯片，所述第一电极50通过一第一金属衬垫51电性连接至所述驱动基板70上的第一焊垫71(如图3所示)，且所述第二电极60通过该一第二金属衬垫61电性连接至所述驱动基板70的第二焊垫72(如图3所示)。所述发光二极管100通过固晶工艺，使第一电极50通过第一金属衬垫51与驱动基板70上的第一焊垫71连接，以及使第二电极60通过第二金属衬垫61与驱动基板70上的第二焊垫72连接。然后通过加热方式使得低熔点的所述第一金属衬垫51及第二金属衬垫61分别与所述第一焊垫71与第二焊垫72产生共融进而分别与所述第一焊垫71与第二焊垫72紧密连接，在降温过程中所述发光二极管100的所述第一电极50与所述第二电极60与所述第一焊垫71与第二焊垫72形成稳固的电性连接。如此保证所述第一电极50与所述第二电极60的表面的平整性，因而有效避免由于上述锡膏及银浆所导致的发光二极管倾斜问题。\n\n[0039]另外，所述发光层30与所述驱动基板70间的一间距大于所述反射块300的一厚度。保证了所述发光层30在垂直方向的位置能够高于所述反射块300，即发光层30在垂直方向的位置在反射层300之上，从而对于五面发光的发光二极管能够发挥最佳的光反射作用。因而能够保证背光模块的高亮度光效。\n\n[0040]本揭示的发光二极管以及包含所述发光二极管的背光模组中，将发光二极管中用来分别与背光模块的驱动基板上的第一焊垫与第二焊垫黏接的第一电极与第二电极的结构增厚，即增加第一电极与第二电极的高度，并使增厚的第一电极与第二电极维持在同一水平高度，从而在后续覆晶设置的流程中有效避免了传统锡膏及银浆等方式所造成的发光二极管倾斜不正问题，保证了背光模块整面的亮度均匀性。此外，在增厚的第一电极与第二电极表面分别设置一金属衬垫用以与驱动基板上第一焊垫与第二焊垫实现金属共融导通，同时增厚的第一电极与第二电极的设计保证了所述发光二极管的发光层仍然能够在垂直方向上保持在设置于相邻两发光二极管之间的反射块之上，维持发光层的高度在反射层之上使发光二极管的光路不会被反射块所阻挡，从而对于五面发光的发光二极管的能够发挥最佳的光反射作用，进而能够保证高亮度背光模块的光效。\n\n[0041]以上所述是本揭示的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本揭示原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也视为本揭示的保护范围。', '技术领域\n\n[0001]本揭示涉及液晶显示技术领域，尤其涉及一种发光二极管及使用所述发光二极管的背光模组，保证了背光模组的亮度均匀性。\n\n背景技术\n\n[0002]随着可穿戴应用设备如智能眼镜、智能手表等设备逐渐兴起，显示工艺对可挠曲显示器件的需求也不断增加。有机发光二极管显示器件(Organic Light EmittingDisplay，OLED)具有自发光不需背光源、厚度薄、视角广、反应速度快等特点，从而具有可挠曲显示的天然优势。面对柔性OLED的竞争，传统的液晶显示技术也逐渐采用柔性衬底，朝向柔性、曲面等方向进行突破，由此可见，柔性、曲面显示技术的时代即将来临。\n\n[0003]直下式背光模组具有窄边框的优势，在大尺寸显示领域得到广泛的应用，但是面临着厚度增加的问题。采用小尺寸的微发光二极管(mini light emitting diode，miniLED)以更小的间距进行排列可以获得较小的混光距离(避免近光处的hotspot现象)，为小尺寸直下式背光模块实现轻、薄、窄提供更大的可能性。直下式背光模块由于采用大量的发光二极管构成阵列，发光二极管本身及发光二极管的焊垫本身会构成面积比例较大的低反射体，发光二极管与发光二极管之间通常会采用高反射率的白油或者其他高反射材料覆盖，所述高反射材料的材料本身反射率为较低的70-90％，因而从整体反射效率仅能达成大约80％左右，远低于侧入式背光模组中所使用的反射片能达成接近100％的反射率，因而导致整体光效较低从而影响了直下式背光模组的亮度与功耗水准，通常会采用较厚的高反射层以保证反射率。\n\n[0004]如图1所示，现有的背光模组中的驱动基板1及单颗微发光二极管2结构中，驱动基板1的焊垫(未图示)与微发光二极管2的p/n电极(未图示)连接，微发光二极管2的四周为高反射层结构，其厚度通常为10微米-30微米。微发光二极管2的p/n电极通过导电锡膏3或者银浆等介质与驱动基板1的焊垫接触。但是导电锡膏3通常是通过涂覆工艺制备的，涂覆完成后处于凝胶状态下具有一定的流动性与表面张力，因而会形成类似“小山峰”形貌，当微发光二极管2通过固晶工艺与导电锡膏3接触后，微发光二极管2因尺寸过小容易在导电锡膏3粘附力的作用下出现倾斜，如图1所示，从而影响到微发光二极管2的光反射状态，使得微发光二极管2在光学上呈现倾斜相关的亮、暗不均现象，并且由于驱动基板1的焊垫面积过小，难以通过控制导电锡膏2的状态来避免上述现象。\n\n[0005]因此，有必要提供一种发光二极管及使用所述发光二极管的背光模组，解决传统微发光二极管及其构成的直下式背光模组因焊垫及导电锡膏的状态与厚度所导致的面内亮度不均问题。\n\n发明内容\n\n[0006]为了解决上述技术问题，本揭示采用覆晶(flip-chip)电极结构，将P电极与N电极的结构增厚，并通过沉积结合低熔点金属构成的金属衬垫来与驱动基板焊垫的金属共融导通，所述共融导通方式有效避免了传统锡膏及银浆等使发光二极管黏结于驱动基板的方式所造成微发光二极管的倾斜问题，保证了背光模块整面的亮度均匀性，同时P电极与N电极的增厚电极设计保证了所述微发光二极管的有源区仍然能够高于设置于微发光二极管两侧的反射层之上，从而能够保证高亮度背光模块光效。\n\n[0007]为了达到上述目的，本揭示提供一种发光二极管，包括：一基板；一第一半导体层，设置于所述基板上；一发光层，设置于所述第一半导体层的第一部分；一第二半导体层，设置于所述发光层上；一第一电极，设置于所述第一半导体层的第二部分上，所述第一部分与所述第二部分不重迭；以及一第二电极，设置于所述第二半导体层上；其中所述第一电极的厚度大于所述第二电极的厚度。\n\n[0008]根据本文描述的发光二极管的一实施例，所述第一电极与所述第二电极分别具有一厚度为介于10微米至30微米之间的一范围内。\n\n[0009]根据本文描述的发光二极管的一实施例，所述第一电极的一表面与所述第二电极的一表面位于同一水平高度。\n\n[0010]根据本文描述的发光二极管的一实施例，所述第一电极与所述第二电极选自由钛、铝、银、金、铜或其组成的合金中的至少一种。\n\n[0011]根据本文描述的发光二极管的一实施例，所述第一电极的表面设置一第一金属衬垫，所述第二电极的表面设置一第二金属衬垫，所述第一金属衬垫与所述第二金属衬垫为低熔点金属。\n\n[0012]为了达到上述目的，本揭示另提供一种背光模组，其包含以上所述的发光二极管。本揭示的背光模组包括：一驱动基板；多个发光二极管，阵列设置于所述驱动基板上，所述发光二极管包括:一基板；一第一半导体层，设置于所述基板上；一发光层，设置于所述第一半导体层的第一部分；一第二半导体层，设置于所述发光层上；一第一电极，设置于所述第一半导体层的第二部分上，所述第一部分与所述第二部分不重迭；以及一第二电极，设置于所述第二半导体层上；其中所述第一电极的厚度大于所述第二电极的厚度；以及多个反射块，分别设置于相邻两发光二极管之间；其中所述发光层与所述驱动基板间的一间距大于所述反射块的一厚度。\n\n[0013]根据本文描述的背光模组的一实施例，所述发光二极管为一覆晶式芯片，所述第一电极通过一第一金属衬垫电性连接至所述驱动基板上的第一焊垫，且所述第二电极通过该一第二金属衬垫电性连接至所述驱动基板的第二焊垫。\n\n[0014]根据本文描述的背光模组的一实施例，所述第一电极与所述第二电极分别具有一厚度为介于10微米至30微米之间的一范围内。\n\n[0015]根据本文描述的背光模组的一实施例，所述第一电极的厚度大于所述第二电极的厚度。\n\n[0016]根据本文描述的背光模组的一实施例，相邻两所述发光二极管间的一间距为介于100微米至1000微米的一范围。\n\n[0017]根据本文描述的背光模组的一实施例，所述第一电极与所述第二电极选自由钛、铝、银、金、铜或其组成的合金中的至少一种。\n\n[0018]根据本文描述的背光模组的一实施例，所述第一电极的一表面与所述第二电极的一表面位于同一水平高度。\n\n[0019]根据本文描述的背光模组的一实施例，所述背光模组更包括一光学膜片组，所述光学膜片组包括依序设置于所述多个发光二极管以及所述多个反射块上的一光学膜片层、一扩散膜层与一增亮膜片层。\n\n[0020]本揭示提供的发光二极管及背光模组，改良了现有发光二极管结构的设计，将发光二极管中用来与背光模块的驱动基板上焊垫黏接的P电极与N电极的结构增厚，即增加P电极与N电极的高度，并使增厚的P电极与N电极维持在同一水平高度，并在增厚的P电极与N电极表面分别设置一金属衬垫用以与驱动基板上焊垫实现金属共融导通，从而有效避免了传统锡膏及银浆等方式造成的发光二极管倾斜问题，保证了背光模块整面的亮度均匀性，同时增厚的P电极与N电极设计保证了所述发光二极管的发光层仍然能够在设置于相邻两发光二极管之间的较厚(10微米至30微米)的反射块之上，从而对于五面发光的微发光二极管的能够发挥最佳的光反射作用，因而能够保证高亮度背光模块的光效。\n\n附图说明\n\n[0021]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0022]图1为现有背光模组结构剖面示意图。\n\n[0023]图2为本揭示发光二极管结构剖面示意图。\n\n[0024]图3为本揭示发光二极管设置于一驱动基板的结构示意图。\n\n[0025]图4为本揭示包含所述发光二极管的背光模组示意图。\n\n具体实施方式\n\n[0026]以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。\n\n[0027]下面结合附图详细本揭示实施例的实现过程。\n\n[0028]请一并参阅图2与图3，其为本揭示的发光二极管100，包括：一基板10、一第一半导体层20、一发光层30以及一第二半导体层40。所述第一半导体层20所述设置于所述基板10上，所述发光层30设置于所述第一半导体层20的第一部分201上，所述第二半导体层40设置于所述发光层30上，一第一电极50设置于所述第一半导体层20的第二部分202上，所述第一部分201与所述第二部分202不重迭，一第二电极60设置于所述第二半导体层40上。其中所述第一电极50的厚度大于所述第二电极60的厚度。\n\n[0029]其中所述基板10可以是柔性FPC板，也可以为PCB板。对于所述基板10，可以使用任何形式的基板而不受限制，只要所述基板10允许发光结构设置在其上。在某些示例性实施例中，所述基板10可为蓝宝石基底、SiC基底、尖晶石基底、Si基底或氮化镓基底。在某些示例性实施例中，所述基板10可具有形成于其上表面上的预定图案，类似于图案化的蓝宝石基底(patterned sapphire substrate,PPS)。\n\n[0030]每个所述发光二极管100可以但不限于为蓝光芯片，又称为次毫米发光二极管，亦可应用于紫外、红光、绿光、白光、红外二极管等，此处不做赘述。并且所述多个发光二极管100采用阵列式排列设置，通过减小相邻两发光二极管100之间的中心间距来实现降低混光距离与后续所制成的背光模组的厚度以满足小尺寸背光模组(小于1毫米)需求。小尺寸的所述发光二极管100具有一宽度L，如图3所示，其宽度L在100微米至600微米间的一范围。相邻两发光二极管之间的间距为100微米至1000微米。\n\n[0031]其中所述第一半导体层20为N型半导体层，而所述第二半导体层40相对的为P型半导体层，详细而言，所述第一半导体层20为N型氮化镓(GaN)层，而所述第二半导体层40为P型氮化镓层。在部分实施例中，第一半导体层20与第二半导体层40中可以包括III-V类化合物半导体，例如，(Al,Ga,In)N的氮化物类半导体。第一半导体层20可以包括掺杂有诸如Si的n型掺杂剂的n型半导体层，并且第二半导体层40可以包括掺杂有诸如Mg的p型掺杂剂的p型半导体层。所述发光层30为多重量子井层(Multiple Quantum Well,MQW)。\n\n[0032]如图2与图3所示，所述发光二极管100为覆晶共面电极堆叠结构，即所述发光二极管100为一覆晶式芯片。发光二极管100的发光层30设置于所述第一半导体层20的第一部分201上，并且裸露出第一半导体层20的第二部分202，第一部分201与第二部分202并不重迭且第一部分201邻接于第二部分202设置，第二半导体层40设置于发光层30上。尽管在图2中未示出，所述发光二极管100还可包括形成于所述基板10与所述第一半导体层20之间的一缓冲层。\n\n[0033]而所述第一电极50与所述第二电极60选自由钛、铝、银、金、铜或其组成的合金中的至少一种。根据不同的实施例，所述第一电极50的表面设置一第一金属衬垫51，所述第二电极60的表面设置一第二金属衬垫61，所述第一金属衬垫51与所述第二金属衬垫61为低熔点金属，例如熔点在摄氏90～450度之间，通常为锡的合金或为镧(ln)系元素。\n\n[0034]另外，所述第一电极50与所述第二电极60分别具有一厚度为介于10微米-30微米之间的一范围内。更进一步的说，所述第一电极50具有一厚度T1，所述第二电极60具有一厚度T2，所述第二半导体层40具有一厚度T3，以及所述发光层30具有一厚度T4，在一实施例中，T1＝T2+T3+T4，使得所述第一电极50的一表面与所述第二电极60的一表面位于同一水平高度，从而使所述发光二极管100覆晶设置于一背光模块200的一驱动基板70上时(如图4所示)，可以维持所述发光二极管100呈现稳定水平状态而不会产生发光二极管倾斜的问题。更详细的说，所述发光二极管100通过固晶工艺与驱动基板上的第一焊垫71及第二焊垫72连接，然后通过加热方式使得低熔点的所述第一金属衬垫51及第二金属衬垫61分别与第一焊垫71及第二焊垫72产生共融进而与所述第一焊垫71及第二焊垫72紧密连接，在降温过程中所述发光二极管100的所述第一电极50与所述第二电极60与所述第一焊垫71及第二焊垫72形成稳固的电性连接。所述第一电极50与所述第二电极60通过沉积及刻蚀工艺制备，因而可以保证所述第一电极50与所述第二电极60的表面的平整性，因而有效避免由于上述锡膏及银浆所导致的发光二极管倾斜问题。\n\n[0035]另外，本揭示图4另提供包含所述发光二极管100的背光模组200，使得本揭示实施例的背光模组结构在实际应用时，例如应用于屏幕显示器时保证了整面的亮度均匀性，提升显示质量。\n\n[0036]如图4所示，本揭示的背光模组200包括：一驱动基板70；多个发光二极管100，阵列设置于所述驱动基板70上，所述发光二极管100包括:一基板10、一第一半导体层20、一发光层30以及一第二半导体层40。所述第一半导体层20所述设置于所述基板10上，所述发光层30设置于所述第一半导体层20的第一部分201，所述第二半导体层40设置于所述发光层30上，一第一电极50设置于所述第一半导体层20的第二部分202上，所述第一部分201与所述第二部分202不重迭，一第二电极60设置于所述第二半导体层40上。其中所述第一电极50的厚度大于所述第二电极60的厚度，多个反射块300分别设置于相邻两发光二极管100之间。\n\n[0037]此外，所述背光模组200更包括一光学膜片组210，所述光学膜片组210包括依序设置于所述多个发光二极管100以及所述多个反射块300上的一光学膜片层211、一扩散膜层212与一增亮膜片层213。所述光学膜片层211以膜片的形式存在，所述光学膜片层211另一种优选方式为直接通过涂布的方式热压固定于所述发光二极管表面。所述光学膜片层211包含荧光粉颗粒和散射粒子，优选为包含量子点粒子等。\n\n[0038]同前所述，所述发光二极管100为一覆晶式芯片，所述第一电极50通过一第一金属衬垫51电性连接至所述驱动基板70上的第一焊垫71(如图3所示)，且所述第二电极60通过该一第二金属衬垫61电性连接至所述驱动基板70的第二焊垫72(如图3所示)。所述发光二极管100通过固晶工艺，使第一电极50通过第一金属衬垫51与驱动基板70上的第一焊垫71连接，以及使第二电极60通过第二金属衬垫61与驱动基板70上的第二焊垫72连接。然后通过加热方式使得低熔点的所述第一金属衬垫51及第二金属衬垫61分别与所述第一焊垫71与第二焊垫72产生共融进而分别与所述第一焊垫71与第二焊垫72紧密连接，在降温过程中所述发光二极管100的所述第一电极50与所述第二电极60与所述第一焊垫71与第二焊垫72形成稳固的电性连接。如此保证所述第一电极50与所述第二电极60的表面的平整性，因而有效避免由于上述锡膏及银浆所导致的发光二极管倾斜问题。\n\n[0039]另外，所述发光层30与所述驱动基板70间的一间距大于所述反射块300的一厚度。保证了所述发光层30在垂直方向的位置能够高于所述反射块300，即发光层30在垂直方向的位置在反射层300之上，从而对于五面发光的发光二极管能够发挥最佳的光反射作用。因而能够保证背光模块的高亮度光效。\n\n[0040]本揭示的发光二极管以及包含所述发光二极管的背光模组中，将发光二极管中用来分别与背光模块的驱动基板上的第一焊垫与第二焊垫黏接的第一电极与第二电极的结构增厚，即增加第一电极与第二电极的高度，并使增厚的第一电极与第二电极维持在同一水平高度，从而在后续覆晶设置的流程中有效避免了传统锡膏及银浆等方式所造成的发光二极管倾斜不正问题，保证了背光模块整面的亮度均匀性。此外，在增厚的第一电极与第二电极表面分别设置一金属衬垫用以与驱动基板上第一焊垫与第二焊垫实现金属共融导通，同时增厚的第一电极与第二电极的设计保证了所述发光二极管的发光层仍然能够在垂直方向上保持在设置于相邻两发光二极管之间的反射块之上，维持发光层的高度在反射层之上使发光二极管的光路不会被反射块所阻挡，从而对于五面发光的发光二极管的能够发挥最佳的光反射作用，进而能够保证高亮度背光模块的光效。\n\n[0041]以上所述是本揭示的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本揭示原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也视为本揭示的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (11001, 24055, '【技术领域】\n\n[0001]本实用新型涉及显示领域，特别是涉及一种背光装置及显示装置。\n\n【背景技术】\n\n[0002]Mini LED(次毫米发光二极管)是一种尺寸介于传统LED与Micro LED之间的发光二极体，是OLED显示技术在未来市场上的强力竞争对手，其具有高亮度、可制作于柔性可弯曲基板上、可应用于高动态对比度显示技术、窄边框显示技术、异形显示技术等诸多优点，成为市场研究热点。然而，Mini LED在出光效率、混光均匀性、成本等方面与常规的背光产品及OLED显示技术相比还有一些差距。例如，以将Mini LED制作于印刷电路板或柔性电路板的直下式背光架构而言，由于折射率的差异导致面光源一部分光线在膜材和基板之间被限制而无法出射，光线在膜材之间的多次折返导致光能的损失和出光效率的下降。对于膜材本身而言，其穿透率也有一定的限制，如何提升发光二极管芯片的出光效率，减少光线在面光源内部的损耗已成为提高面光源光效的首要问题。\n\n[0003]故，有必要提供一种背光装置及显示装置，以解决现有技术所存在的问题。\n\n【实用新型内容】\n\n[0004]有鉴于现有技术的缺点，本实用新型的主要目的在于提供一种背光装置及显示装置，可以减少内部的回光损失，从整体上提升面光源的出光效率。\n\n[0005]为达成本实用新型的前述目的，本实用新型提供一种背光装置，其包括：一基板；一发光二极管层，设于所述基板上，并包括多个间隔设置的红色、绿色及蓝色发光二极管芯片；以及一带通滤光片，设于所述发光二极管层上，其中所述带通滤光片在对应所述发光二极管芯片的位置上设有开孔。\n\n[0006]在本实用新型的一实施例中，所述背光装置还包括至少一扩散层，所述至少一扩散层设置于所述带通滤光片上。\n\n[0007]在本实用新型的一实施例中，所述基板至少包含一金属线层与一绝缘层。\n\n[0008]在本实用新型的一实施例中，所述背光装置还包括至少一增亮膜层，所述至少一增亮膜层设置于所述至少一扩散层上。\n\n[0009]在本实用新型的一实施例中，所述发光二极管芯片包括红色、绿色及蓝色发光二极管芯片。\n\n[0010]在本实用新型的一实施例中，所述发光二极管芯片是尺寸介于100～200微米的次毫米发光二极管芯片。\n\n[0011]在本实用新型的一实施例中，所述发光二极管层涂布有一透明填充层，其填充于所述间隔设置的发光二极管芯片之间的缝隙，并与所述发光二极管芯片高度相同。\n\n[0012]本实用新型另提供一种包括如上所述的背光装置的显示装置。\n\n[0013]本实用新型主要是在发光二极管层上方加入允许蓝光穿透、反射红绿光的带通滤光片，减少Mini LED装置内部的回光损失，从整体上提升面光源的出光效率。\n\n【附图说明】\n\n[0014]图1是本实用新型一实施例的背光装置的剖面示意图。\n\n[0015]图2A至图2D是图1的背光装置的制造流程示意图。\n\n[0016]图3是本实用新型一实施例的背光装置的带通滤光片的制造流程示意图。\n\n【具体实施方式】\n\n[0017]为让本实用新型上述目的、特征及优点更明显易懂，下文特举本实用新型较佳实施例，并配合附图，作详细说明如下。再者，本实用新型所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本实用新型，而非用以限制本实用新型。\n\n[0018]本实用新型的背光装置主要可作为一般平面显示屏的背光源。请参考图1所示，图1是本实用新型一实施例的背光装置的剖面示意图。所述背光装置主要包括一基板10、一发光二极管层20以及一带通滤光片30，并可进一步包括至少一扩散层40及至少一增亮膜层50。\n\n[0019]在一实施例中，所述基板10至少包含一金属线层与一绝缘层。例如所述基板10可包括铜线层、聚酰亚胺薄膜层和白油层，其中所述白油层将穿透过所述带通滤光片的蓝光二次反射回所述至少一扩散层。\n\n[0020]如图1所示，所述发光二极管层20设于所述基板10上，并包括多个间隔设置的发光二极管芯片(200,201,202)。具体而言，所述发光二极管芯片(200,201,202)可包含尺寸介于100～200微米的红色、绿色及蓝色次毫米发光二极管(MiniLED)芯片，且由于所述发光二极管层20是采用红色、绿色及蓝色次毫米发光二极管芯片分别提供红、绿、蓝光，所述发光二极管层20可不具有萤光粉层或量子点膜层，不需要通过蓝色次毫米发光二极管芯片照射激发萤光粉层或量子点膜层来转换成其他色光，也就避免了荧光粉层或量子点膜层激发过程中的光子损失，从整体上提升面光源的出光效率。\n\n[0021]在一实施例中，所述发光二极管层20还涂布有一透明填充层203，其填充于所述间隔设置的发光二极管芯片(200,201,202)之间的缝隙，并与所述发光二极管芯片(200,201,202)的高度相同，如此可使得所述发光二极管层20的表面平整，有利于后续膜层的设置。\n\n[0022]如图1所示，所述带通滤光片30设于所述发光二极管层20上，所述带通滤光片30优选是制备在耐高温透明塑料膜片上。所述带通滤光片30在对应所述发光二极管芯片(200,201,202)的位置上设有开孔，且所述带通滤光片30的表面允许蓝光穿透，但是会反射红光和绿光。\n\n[0023]如图1所示，所述至少一扩散层40是设置于所述带通滤光片30上，并通过所述带通滤光片30的开孔接收从所述发光二极管层20发出的光线，用以使所述光线分散混匀。由于光线被分散混匀，所述至少一扩散层40会将一部分接收的光线反射回所述带通滤光片30。此时，所述带通滤光片30表面允许被所述至少一扩散层40所反射的光线中的蓝光穿透，并将所述反射的光线中的红光和绿光再次反射回所述至少一扩散层40。\n\n[0024]如图1所示，所述至少一增亮膜层50是设置于所述至少一扩散层40上。且在本实施例中，背光装置包括了上、下增亮膜层(50,51)，其作用为将光聚积在一定角度范围内，增加面光源的正面亮度。\n\n[0025]由于红色、绿色及蓝色发光二极管芯片发出的光不经过带通滤光片30而直接进入扩散层40下表面，部份的红色、绿色及蓝色三色光在扩散层40下表面发生反射，反射后蓝光经过所述带通滤光片30和所述基板10的白油层后经过二次反射重新进入所述扩散层40中，绿光和红光在所述带通滤光片30的表面几乎被全部反射回所述扩散层40，而不会透过所述带通滤光片30进入所述基板10的白油层。通过这样的光路设计，可让更多光线进入扩散层40和增亮膜层50，从整体上提升面光源出光效率。同时，采用三基色的发光二极管芯片，可避免通过蓝色发光二极管芯片部分激发荧光粉或量子点膜层造成的激发光效损失，可以实现更高效的发光。\n\n[0026]请进一步参考图2A至图2D，图2A至图2D是图1的背光装置的制造流程示意图。所述背光装置的制造流程主要包括下列步骤：\n\n[0027]提供一基板10，如图2A所示，其中所述基板10可由至少一金属线层与一绝缘层制备而成，所述金属线层与绝缘层可包括例如铜线层、聚酰亚胺薄膜层和白油层；\n\n[0028]设置一发光二极管层20于所述基板10上，如图2B所示，其中所述发光二极管层20包括多个间隔设置的发光二极管芯片(200,201,202)。具体而言，所述发光二极管芯片(200,201,202)可包含尺寸介于100～200微米的红色、绿色及蓝色次毫米发光二极管(MiniLED)芯片。本步骤还可再包含一涂布工艺来形成一透明填充层203，使透明填充层203的材料填充于所述间隔设置的发光二极管芯片(200,201,202)之间的缝隙，如图2C所示；\n\n[0029]步骤S102：设置一表面允许蓝光穿透，但反射红光和绿光的带通滤光片30于所述发光二极管层20上，如图2D所示，其中进一步参考图3所示，本步骤会先将所述带通滤光片30制备在耐高温透明塑料膜片上，随后在对应所述发光二极管芯片(200,201,202)的位置上设有开孔300，最后再将所述带通滤光片30通过热压方式设于所述发光二极管层20上；\n\n[0030]形成至少一扩散层40于所述带通滤光片30上，其中所述扩散层40是含有散射颗粒的树脂层或胶黏剂，用以通过所述带通滤光片30的开孔接收从所述发光二极管层20发出的光线，用以使所述光线分散混匀；以及\n\n[0031]步骤S104：形成至少一增亮膜层50于所述至少一扩散层40上。\n\n[0032]本实用新型还提供一种显示装置，其包括了如上所述的的背光装置，用以提供一面光源。\n\n[0033]综上所述，本实用新型主要是在发光二极管层上方加入允许蓝光穿透、反射红绿光的带通滤光片，减少Mini LED装置内部的回光损失，从整体上提升面光源的出光效率。且本实用新型通过采用红色、绿色及蓝色发光二极管芯片制备Mini LED装置，避免采用蓝光发光二极管芯片激发荧光粉或量子点膜发出其他色光的方法，以避免采用此方法会引起的光子激发损失，提升Mini LED装置的出光效率。\n\n[0034]本实用新型已由上述相关实施例加以描述，然而上述实施例仅为实施本实用新型的范例。必需指出的是，已公开的实施例并未限制本实用新型的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本实用新型的范围内。', '【技术领域】\n\n[0001]本实用新型涉及显示领域，特别是涉及一种背光装置及显示装置。\n\n【背景技术】\n\n[0002]Mini LED(次毫米发光二极管)是一种尺寸介于传统LED与Micro LED之间的发光二极体，是OLED显示技术在未来市场上的强力竞争对手，其具有高亮度、可制作于柔性可弯曲基板上、可应用于高动态对比度显示技术、窄边框显示技术、异形显示技术等诸多优点，成为市场研究热点。然而，Mini LED在出光效率、混光均匀性、成本等方面与常规的背光产品及OLED显示技术相比还有一些差距。例如，以将Mini LED制作于印刷电路板或柔性电路板的直下式背光架构而言，由于折射率的差异导致面光源一部分光线在膜材和基板之间被限制而无法出射，光线在膜材之间的多次折返导致光能的损失和出光效率的下降。对于膜材本身而言，其穿透率也有一定的限制，如何提升发光二极管芯片的出光效率，减少光线在面光源内部的损耗已成为提高面光源光效的首要问题。\n\n[0003]故，有必要提供一种背光装置及显示装置，以解决现有技术所存在的问题。\n\n【实用新型内容】\n\n[0004]有鉴于现有技术的缺点，本实用新型的主要目的在于提供一种背光装置及显示装置，可以减少内部的回光损失，从整体上提升面光源的出光效率。\n\n[0005]为达成本实用新型的前述目的，本实用新型提供一种背光装置，其包括：一基板；一发光二极管层，设于所述基板上，并包括多个间隔设置的红色、绿色及蓝色发光二极管芯片；以及一带通滤光片，设于所述发光二极管层上，其中所述带通滤光片在对应所述发光二极管芯片的位置上设有开孔。\n\n[0006]在本实用新型的一实施例中，所述背光装置还包括至少一扩散层，所述至少一扩散层设置于所述带通滤光片上。\n\n[0007]在本实用新型的一实施例中，所述基板至少包含一金属线层与一绝缘层。\n\n[0008]在本实用新型的一实施例中，所述背光装置还包括至少一增亮膜层，所述至少一增亮膜层设置于所述至少一扩散层上。\n\n[0009]在本实用新型的一实施例中，所述发光二极管芯片包括红色、绿色及蓝色发光二极管芯片。\n\n[0010]在本实用新型的一实施例中，所述发光二极管芯片是尺寸介于100～200微米的次毫米发光二极管芯片。\n\n[0011]在本实用新型的一实施例中，所述发光二极管层涂布有一透明填充层，其填充于所述间隔设置的发光二极管芯片之间的缝隙，并与所述发光二极管芯片高度相同。\n\n[0012]本实用新型另提供一种包括如上所述的背光装置的显示装置。\n\n[0013]本实用新型主要是在发光二极管层上方加入允许蓝光穿透、反射红绿光的带通滤光片，减少Mini LED装置内部的回光损失，从整体上提升面光源的出光效率。\n\n【附图说明】\n\n[0014]图1是本实用新型一实施例的背光装置的剖面示意图。\n\n[0015]图2A至图2D是图1的背光装置的制造流程示意图。\n\n[0016]图3是本实用新型一实施例的背光装置的带通滤光片的制造流程示意图。\n\n【具体实施方式】\n\n[0017]为让本实用新型上述目的、特征及优点更明显易懂，下文特举本实用新型较佳实施例，并配合附图，作详细说明如下。再者，本实用新型所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本实用新型，而非用以限制本实用新型。\n\n[0018]本实用新型的背光装置主要可作为一般平面显示屏的背光源。请参考图1所示，图1是本实用新型一实施例的背光装置的剖面示意图。所述背光装置主要包括一基板10、一发光二极管层20以及一带通滤光片30，并可进一步包括至少一扩散层40及至少一增亮膜层50。\n\n[0019]在一实施例中，所述基板10至少包含一金属线层与一绝缘层。例如所述基板10可包括铜线层、聚酰亚胺薄膜层和白油层，其中所述白油层将穿透过所述带通滤光片的蓝光二次反射回所述至少一扩散层。\n\n[0020]如图1所示，所述发光二极管层20设于所述基板10上，并包括多个间隔设置的发光二极管芯片(200,201,202)。具体而言，所述发光二极管芯片(200,201,202)可包含尺寸介于100～200微米的红色、绿色及蓝色次毫米发光二极管(MiniLED)芯片，且由于所述发光二极管层20是采用红色、绿色及蓝色次毫米发光二极管芯片分别提供红、绿、蓝光，所述发光二极管层20可不具有萤光粉层或量子点膜层，不需要通过蓝色次毫米发光二极管芯片照射激发萤光粉层或量子点膜层来转换成其他色光，也就避免了荧光粉层或量子点膜层激发过程中的光子损失，从整体上提升面光源的出光效率。\n\n[0021]在一实施例中，所述发光二极管层20还涂布有一透明填充层203，其填充于所述间隔设置的发光二极管芯片(200,201,202)之间的缝隙，并与所述发光二极管芯片(200,201,202)的高度相同，如此可使得所述发光二极管层20的表面平整，有利于后续膜层的设置。\n\n[0022]如图1所示，所述带通滤光片30设于所述发光二极管层20上，所述带通滤光片30优选是制备在耐高温透明塑料膜片上。所述带通滤光片30在对应所述发光二极管芯片(200,201,202)的位置上设有开孔，且所述带通滤光片30的表面允许蓝光穿透，但是会反射红光和绿光。\n\n[0023]如图1所示，所述至少一扩散层40是设置于所述带通滤光片30上，并通过所述带通滤光片30的开孔接收从所述发光二极管层20发出的光线，用以使所述光线分散混匀。由于光线被分散混匀，所述至少一扩散层40会将一部分接收的光线反射回所述带通滤光片30。此时，所述带通滤光片30表面允许被所述至少一扩散层40所反射的光线中的蓝光穿透，并将所述反射的光线中的红光和绿光再次反射回所述至少一扩散层40。\n\n[0024]如图1所示，所述至少一增亮膜层50是设置于所述至少一扩散层40上。且在本实施例中，背光装置包括了上、下增亮膜层(50,51)，其作用为将光聚积在一定角度范围内，增加面光源的正面亮度。\n\n[0025]由于红色、绿色及蓝色发光二极管芯片发出的光不经过带通滤光片30而直接进入扩散层40下表面，部份的红色、绿色及蓝色三色光在扩散层40下表面发生反射，反射后蓝光经过所述带通滤光片30和所述基板10的白油层后经过二次反射重新进入所述扩散层40中，绿光和红光在所述带通滤光片30的表面几乎被全部反射回所述扩散层40，而不会透过所述带通滤光片30进入所述基板10的白油层。通过这样的光路设计，可让更多光线进入扩散层40和增亮膜层50，从整体上提升面光源出光效率。同时，采用三基色的发光二极管芯片，可避免通过蓝色发光二极管芯片部分激发荧光粉或量子点膜层造成的激发光效损失，可以实现更高效的发光。\n\n[0026]请进一步参考图2A至图2D，图2A至图2D是图1的背光装置的制造流程示意图。所述背光装置的制造流程主要包括下列步骤：\n\n[0027]提供一基板10，如图2A所示，其中所述基板10可由至少一金属线层与一绝缘层制备而成，所述金属线层与绝缘层可包括例如铜线层、聚酰亚胺薄膜层和白油层；\n\n[0028]设置一发光二极管层20于所述基板10上，如图2B所示，其中所述发光二极管层20包括多个间隔设置的发光二极管芯片(200,201,202)。具体而言，所述发光二极管芯片(200,201,202)可包含尺寸介于100～200微米的红色、绿色及蓝色次毫米发光二极管(MiniLED)芯片。本步骤还可再包含一涂布工艺来形成一透明填充层203，使透明填充层203的材料填充于所述间隔设置的发光二极管芯片(200,201,202)之间的缝隙，如图2C所示；\n\n[0029]步骤S102：设置一表面允许蓝光穿透，但反射红光和绿光的带通滤光片30于所述发光二极管层20上，如图2D所示，其中进一步参考图3所示，本步骤会先将所述带通滤光片30制备在耐高温透明塑料膜片上，随后在对应所述发光二极管芯片(200,201,202)的位置上设有开孔300，最后再将所述带通滤光片30通过热压方式设于所述发光二极管层20上；\n\n[0030]形成至少一扩散层40于所述带通滤光片30上，其中所述扩散层40是含有散射颗粒的树脂层或胶黏剂，用以通过所述带通滤光片30的开孔接收从所述发光二极管层20发出的光线，用以使所述光线分散混匀；以及\n\n[0031]步骤S104：形成至少一增亮膜层50于所述至少一扩散层40上。\n\n[0032]本实用新型还提供一种显示装置，其包括了如上所述的的背光装置，用以提供一面光源。\n\n[0033]综上所述，本实用新型主要是在发光二极管层上方加入允许蓝光穿透、反射红绿光的带通滤光片，减少Mini LED装置内部的回光损失，从整体上提升面光源的出光效率。且本实用新型通过采用红色、绿色及蓝色发光二极管芯片制备Mini LED装置，避免采用蓝光发光二极管芯片激发荧光粉或量子点膜发出其他色光的方法，以避免采用此方法会引起的光子激发损失，提升Mini LED装置的出光效率。\n\n[0034]本实用新型已由上述相关实施例加以描述，然而上述实施例仅为实施本实用新型的范例。必需指出的是，已公开的实施例并未限制本实用新型的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本实用新型的范围内。');
INSERT INTO `os_patent_instruction_text` VALUES (11002, 24056, '技术领域\n\n[0001]本实用新型是有关于显示器领域，特别是有关于一种背光模块及液晶显示器。\n\n背景技术\n\n[0002]为了达成全面屏的需求，侧入式入光方案在边框的缩减存在极限，一般而言，在下边框区需要预留软性电路板的连接区，因此下边框的宽度的极限大致上是2至3毫米左右。相反的，直下式入光方案不需预留上述软性电路板的连接区，所以可进一步缩减上、下、左及右边框的宽度。\n\n[0003]请参照图1A及1B，分别为现有的背光模块10的剖面示意图与上视示意图。目前的直下式入光方案，由于发光二极管(未绘示)及焊盘11为非反射体，所以需在未设置发光二极管与焊盘11的位置设置反射层12，以提高亮度。然而，为了避免在设置反射层12时的工艺误差而遮挡所述焊盘11，现有技术是在焊盘11的周围定义不设置反射层12的一禁制区13。然而，上述的方式会使得反射层12的比例下降，进而降低了亮度。\n\n[0004]故，有必要提供一种背光模块及液晶显示器，以解决现有技术所存在的问题。\n\n[0005]实用新型内容\n\n[0006]有鉴于此，本实用新型提供一种背光模块及液晶显示器，以解决由于反射层的比例下降，而导致背光模块及液晶显示器的亮度不足的问题。\n\n[0007]本实用新型的一目的在于提供一种背光模块，其通过在反射图案层设有对应多个焊盘的位置的多个开口，并且所述多个开口的开口尺寸小于所述多个焊盘的焊盘尺寸，进而提升反射图案层占所述基板的比例，故可提升亮度。\n\n[0008]本实用新型的另一目的在于提供一种液晶显示器，其可以包含有本实用新型实施例的背光模块，进而提升液晶显示器的显示亮度。\n\n[0009]为达成本实用新型的前述目的，本实用新型一实施例提供一种背光模块，其中所述背光模块包含：一基板、多个焊盘及一反射图案层。所述多个焊盘散布在所述基板上且各具有一焊盘尺寸。所述反射图案层覆盖所述多个焊盘及所述基板，其中所述反射图案层具有多个开口，所述多个开口的位置对应所述多个焊盘的位置，且所述多个开口各具有一开口尺寸，其中所述开口尺寸小于对应的所述焊盘尺寸。\n\n[0010]在本实用新型的一实施例中，所述背光模块更包含多个发光二极管芯片，设在所述多个焊盘上且电性连接所述多个焊盘，其中所述多个发光二极管芯片各具有一芯片尺寸，所述芯片尺寸小于或等于对应的所述开口尺寸。\n\n[0011]在本实用新型的一实施例中，所述芯片尺寸介于100至500微米之间。\n\n[0012]在本实用新型的一实施例中，所述背光模块更包含至少一光学层，所述至少一光学层覆盖所述反射图案层与所述多个发光二极管芯片。\n\n[0013]在本实用新型的一实施例中，所述至少一光学层包含一荧光层、一扩散层与一增亮层中的至少一个。\n\n[0014]在本实用新型的一实施例中，所述背光模块是一直下式背光模块。\n\n[0015]在本实用新型的一实施例中，所述焊盘尺寸是介于600至1000微米之间。\n\n[0016]在本实用新型的一实施例中，所述开口尺寸是介于100至500微米之间。\n\n[0017]再者，本实用新型另一实施例提供一种液晶显示器，其中所述液晶显示器包含上述的背光模块。\n\n[0018]与现有技术相比较，本实用新型实施例的背光模块及液晶显示器，其通过在背光模块的反射图案层设有对应多个焊盘的位置的多个开口，并且所述多个开口的开口尺寸小于所述多个焊盘的焊盘尺寸，进而提升反射图案层占所述基板的比例，故可提升背光模块及液晶显示器的亮度。\n\n[0019]为让本实用新型的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下：\n\n附图说明\n\n[0020]图1A是现有的背光模块的剖面示意图。\n\n[0021]图1B是现有的背光模块的上视示意图。\n\n[0022]图2A是本实用新型实施例的背光模块的剖面示意图。\n\n[0023]图2B是本实用新型实施例的背光模块的上视示意图。\n\n[0024]图2C是本实用新型另一实施例的背光模块的剖面示意图。\n\n[0025]图3是本实用新型实施例的液晶显示器的剖面示意图。\n\n具体实施方式\n\n[0026]以下各实施例的说明是参考附加的图式，用以例示本实用新型可用以实施的特定实施例。再者，本实用新型所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧面、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本实用新型，而非用以限制本实用新型。\n\n[0027]请参照一并参照图2A及2B所示，图2A是本实用新型实施例的背光模块20的剖面示意图；及图2B是本实用新型实施例的背光模块20的上视示意图，其中图2B未绘示有发光二极管芯片24。本实用新型一实施例的背光模块20例如是一直下型背光模块。所述背光模块20主要包含一基板21、多个焊盘22及一反射图案层23。所述基板21可承载所述背光模块20的构件，例如所述多个焊盘22及所述反射图案层23，或者其他构件。在一实施例中，所述基板21例如是一软质基板或一硬质基板。在一范例中，所述软质基板例如是一软质电路板。在另一范例中，所述硬质基板例如是一硬质电路板。在另一实施例中，所述软质电路板或所述硬质电路板由下至上依序可包含有一保护层、一第一铜线图案层、一绝缘间隔层及一第二铜线图案层。\n\n[0028]本实用新型一实施例的背光模块20的多个焊盘22散布在所述基板21上且各具有一焊盘尺寸22A。在一实施例中，所述多个焊盘22的底部可电性连接所述基板21(例如所述软质电路板或所述硬质电路板)。在另一实施例中，所述焊盘尺寸22A大于现有技术中所使用的焊盘尺寸。具体而言，请一并参照图1A至2B，现有技术由于需要在焊盘11的周围定义有禁制区13，且焊盘13本身非反射体，所以焊盘13往往是朝向小尺寸的方向制作。相反的，本实用新型实施例的背光模块20则是扩大焊盘尺寸22A(例如若是现有技术的焊盘11尺寸介于100至500微米之间，则本实用新型实施例的所述焊盘尺寸22A是介于600至1000微米之间)，并且通过反射图案层23的设置方式来增强反射效果，进而提高亮度。详细说明请参照后面段落的描述。在一实施例中，所述焊盘尺寸22A例如是650微米、700微米、750微米、800微米、850微米、900微米或950微米。\n\n[0029]本实用新型一实施例的背光模块20的反射图案层23覆盖所述多个焊盘22及所述基板21，其中所述反射图案层23具有多个开口231，所述多个开口231的位置对应所述多个焊盘22的位置，且所述多个开口231各具有一开口尺寸231A，其中所述开口尺寸231A小于对应的所述焊盘尺寸22A。在一实施例中，所述反射图案层23为一白色反射层，其主要功能可提供电性阻隔和提高光线反射率。所述反射图案层23可以为背光模块领域中常用的白色颜料树脂混合层，也可以为具有多个无机膜层的一复合光学反射层。在一范例中，所述反射图案层23的一材质例如是石油通过精炼后所形成液态烃的混合物。\n\n[0030]这边要提到的是，所述开口尺寸231A例如是对应于现有技术的焊盘尺寸。例如，现有技术的焊盘尺寸11A介于100至500微米之间，则本实用新型实施例的开口尺寸231A也是介于100至500微米之间(例如150微米、200微米、250微米、300微米、350微米、400微米或450微米)。这边要提到的是，本实用新型实施例的多个焊盘22各至少有一部分(例如所述多个焊盘22的边缘)被所述反射图案层23所覆盖，并且所述多个焊盘22的剩余部分是通过所述多个开口231所露出。在一实施例中，所述背光模块20可包含多个发光二极管芯片24，所述多个发光二极管芯片24设在所述多个焊盘22上且例如通过所述多个开口231来电性连接所述多个焊盘22，其中所述多个发光二极管芯片24各具有一芯片尺寸24A，所述芯片尺寸小于或等于对应的所述开口尺寸。所述多个发光二极管芯片24可发出光线241，并且所述光线241可通过所述反射图案层23的反射以增加所述背光模块20的亮度。在一范例中，所述芯片尺寸24A介于100至500微米之间(例如150微米、200微米、250微米、300微米、350微米、400微米或450微米)。\n\n[0031]再次说明的是对于所述焊盘尺寸22A与对应的所述开口尺寸231A与对应的所述芯片尺寸24A之间的关系。首先，所述开口尺寸231A关联于所述芯片尺寸24A，亦即所述开口尺寸231A是根据所述芯片尺寸24A来设计。例如，所述芯片尺寸24A为300微米时，则所述开口尺寸231A可以是300微米以上。在较佳的范例中，所述芯片尺寸24A与所述开口尺寸231A相等，以避免所述反射层12的比例下降。在决定所述开口尺寸231A后，再决定所述焊盘尺寸22A，例如所述开口尺寸231A为300微米时，所述焊盘尺寸22A可为700微米。由上可知，所述焊盘尺寸22A与对应的所述开口尺寸231A与对应的所述芯片尺寸24A是可以根据需求进行适当调整。\n\n[0032]由上可知，本实用新型实施例的背光模块20是通过扩大焊盘尺寸的方式，并且通过所述反射图案层23来定义所述多个焊盘22的露出区域，进而可在不设置禁制区13的前提下，保证所述多个焊盘22不被所述反射图案层23所覆盖。再者，由于不需设置禁制区13，所以可提升本实用新型实施例的背光模块20的亮度。\n\n[0033]请参照图2C，其是本实用新型另一实施例的背光模块20的剖面示意图。在一实施例中，所述背光模块20更包含至少一光学层25，所述至少一光学层25覆盖所述反射图案层23与所述多个发光二极管芯片24。在一范例中，所述至少一光学层包含一荧光层251(例如可包含透明硅胶及萤光颗粒)、一扩散层252与一增亮层253中的至少一个。要提到的是，所述荧光层251、所述扩散层252与所述增亮层253所使用的材质与制作方式例如可参考一般的背光模块中所使用的荧光层、扩散层与增亮层的材质与制作方式，故不再赘述。\n\n[0034]请参照图3，其是本实用新型一实施例的液晶显示器30的剖面示意图。本实用新型另一实施例提出一种液晶显示器30，所述液晶显示器30包含有上述任一实施例的背光模块20。在一实施例中，所述液晶显示器30还可包含一般液晶显示器的其他构件，例如一显示模块31，其中所述背光模块20所产生的光线可穿过所述显示模块31，进而显示所述液晶显示器20的图像或影像。\n\n[0035]由上可知，本实用新型实施例的液晶显示器30的采用上述的背光模块20。背光模块20是通过扩大焊盘尺寸的方式，并且通过所述反射图案层23来定义所述多个焊盘22的露出区域，进而可在不设置禁制区13的前提下，保证所述多个焊盘22不被所述反射图案层23所覆盖。再者，由于不需设置禁制区13，所以可提升背光模块20的亮度。因此，可提升包含有背光模块20的本实用新型实施例的液晶显示器30的亮度。\n\n[0036]本实用新型已由上述相关实施例加以描述，然而上述实施例仅为实施本实用新型的范例。必需指出的是，已公开的实施例并未限制本实用新型的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本实用新型的范围内。', '技术领域\n\n[0001]本实用新型是有关于显示器领域，特别是有关于一种背光模块及液晶显示器。\n\n背景技术\n\n[0002]为了达成全面屏的需求，侧入式入光方案在边框的缩减存在极限，一般而言，在下边框区需要预留软性电路板的连接区，因此下边框的宽度的极限大致上是2至3毫米左右。相反的，直下式入光方案不需预留上述软性电路板的连接区，所以可进一步缩减上、下、左及右边框的宽度。\n\n[0003]请参照图1A及1B，分别为现有的背光模块10的剖面示意图与上视示意图。目前的直下式入光方案，由于发光二极管(未绘示)及焊盘11为非反射体，所以需在未设置发光二极管与焊盘11的位置设置反射层12，以提高亮度。然而，为了避免在设置反射层12时的工艺误差而遮挡所述焊盘11，现有技术是在焊盘11的周围定义不设置反射层12的一禁制区13。然而，上述的方式会使得反射层12的比例下降，进而降低了亮度。\n\n[0004]故，有必要提供一种背光模块及液晶显示器，以解决现有技术所存在的问题。\n\n[0005]实用新型内容\n\n[0006]有鉴于此，本实用新型提供一种背光模块及液晶显示器，以解决由于反射层的比例下降，而导致背光模块及液晶显示器的亮度不足的问题。\n\n[0007]本实用新型的一目的在于提供一种背光模块，其通过在反射图案层设有对应多个焊盘的位置的多个开口，并且所述多个开口的开口尺寸小于所述多个焊盘的焊盘尺寸，进而提升反射图案层占所述基板的比例，故可提升亮度。\n\n[0008]本实用新型的另一目的在于提供一种液晶显示器，其可以包含有本实用新型实施例的背光模块，进而提升液晶显示器的显示亮度。\n\n[0009]为达成本实用新型的前述目的，本实用新型一实施例提供一种背光模块，其中所述背光模块包含：一基板、多个焊盘及一反射图案层。所述多个焊盘散布在所述基板上且各具有一焊盘尺寸。所述反射图案层覆盖所述多个焊盘及所述基板，其中所述反射图案层具有多个开口，所述多个开口的位置对应所述多个焊盘的位置，且所述多个开口各具有一开口尺寸，其中所述开口尺寸小于对应的所述焊盘尺寸。\n\n[0010]在本实用新型的一实施例中，所述背光模块更包含多个发光二极管芯片，设在所述多个焊盘上且电性连接所述多个焊盘，其中所述多个发光二极管芯片各具有一芯片尺寸，所述芯片尺寸小于或等于对应的所述开口尺寸。\n\n[0011]在本实用新型的一实施例中，所述芯片尺寸介于100至500微米之间。\n\n[0012]在本实用新型的一实施例中，所述背光模块更包含至少一光学层，所述至少一光学层覆盖所述反射图案层与所述多个发光二极管芯片。\n\n[0013]在本实用新型的一实施例中，所述至少一光学层包含一荧光层、一扩散层与一增亮层中的至少一个。\n\n[0014]在本实用新型的一实施例中，所述背光模块是一直下式背光模块。\n\n[0015]在本实用新型的一实施例中，所述焊盘尺寸是介于600至1000微米之间。\n\n[0016]在本实用新型的一实施例中，所述开口尺寸是介于100至500微米之间。\n\n[0017]再者，本实用新型另一实施例提供一种液晶显示器，其中所述液晶显示器包含上述的背光模块。\n\n[0018]与现有技术相比较，本实用新型实施例的背光模块及液晶显示器，其通过在背光模块的反射图案层设有对应多个焊盘的位置的多个开口，并且所述多个开口的开口尺寸小于所述多个焊盘的焊盘尺寸，进而提升反射图案层占所述基板的比例，故可提升背光模块及液晶显示器的亮度。\n\n[0019]为让本实用新型的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下：\n\n附图说明\n\n[0020]图1A是现有的背光模块的剖面示意图。\n\n[0021]图1B是现有的背光模块的上视示意图。\n\n[0022]图2A是本实用新型实施例的背光模块的剖面示意图。\n\n[0023]图2B是本实用新型实施例的背光模块的上视示意图。\n\n[0024]图2C是本实用新型另一实施例的背光模块的剖面示意图。\n\n[0025]图3是本实用新型实施例的液晶显示器的剖面示意图。\n\n具体实施方式\n\n[0026]以下各实施例的说明是参考附加的图式，用以例示本实用新型可用以实施的特定实施例。再者，本实用新型所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧面、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本实用新型，而非用以限制本实用新型。\n\n[0027]请参照一并参照图2A及2B所示，图2A是本实用新型实施例的背光模块20的剖面示意图；及图2B是本实用新型实施例的背光模块20的上视示意图，其中图2B未绘示有发光二极管芯片24。本实用新型一实施例的背光模块20例如是一直下型背光模块。所述背光模块20主要包含一基板21、多个焊盘22及一反射图案层23。所述基板21可承载所述背光模块20的构件，例如所述多个焊盘22及所述反射图案层23，或者其他构件。在一实施例中，所述基板21例如是一软质基板或一硬质基板。在一范例中，所述软质基板例如是一软质电路板。在另一范例中，所述硬质基板例如是一硬质电路板。在另一实施例中，所述软质电路板或所述硬质电路板由下至上依序可包含有一保护层、一第一铜线图案层、一绝缘间隔层及一第二铜线图案层。\n\n[0028]本实用新型一实施例的背光模块20的多个焊盘22散布在所述基板21上且各具有一焊盘尺寸22A。在一实施例中，所述多个焊盘22的底部可电性连接所述基板21(例如所述软质电路板或所述硬质电路板)。在另一实施例中，所述焊盘尺寸22A大于现有技术中所使用的焊盘尺寸。具体而言，请一并参照图1A至2B，现有技术由于需要在焊盘11的周围定义有禁制区13，且焊盘13本身非反射体，所以焊盘13往往是朝向小尺寸的方向制作。相反的，本实用新型实施例的背光模块20则是扩大焊盘尺寸22A(例如若是现有技术的焊盘11尺寸介于100至500微米之间，则本实用新型实施例的所述焊盘尺寸22A是介于600至1000微米之间)，并且通过反射图案层23的设置方式来增强反射效果，进而提高亮度。详细说明请参照后面段落的描述。在一实施例中，所述焊盘尺寸22A例如是650微米、700微米、750微米、800微米、850微米、900微米或950微米。\n\n[0029]本实用新型一实施例的背光模块20的反射图案层23覆盖所述多个焊盘22及所述基板21，其中所述反射图案层23具有多个开口231，所述多个开口231的位置对应所述多个焊盘22的位置，且所述多个开口231各具有一开口尺寸231A，其中所述开口尺寸231A小于对应的所述焊盘尺寸22A。在一实施例中，所述反射图案层23为一白色反射层，其主要功能可提供电性阻隔和提高光线反射率。所述反射图案层23可以为背光模块领域中常用的白色颜料树脂混合层，也可以为具有多个无机膜层的一复合光学反射层。在一范例中，所述反射图案层23的一材质例如是石油通过精炼后所形成液态烃的混合物。\n\n[0030]这边要提到的是，所述开口尺寸231A例如是对应于现有技术的焊盘尺寸。例如，现有技术的焊盘尺寸11A介于100至500微米之间，则本实用新型实施例的开口尺寸231A也是介于100至500微米之间(例如150微米、200微米、250微米、300微米、350微米、400微米或450微米)。这边要提到的是，本实用新型实施例的多个焊盘22各至少有一部分(例如所述多个焊盘22的边缘)被所述反射图案层23所覆盖，并且所述多个焊盘22的剩余部分是通过所述多个开口231所露出。在一实施例中，所述背光模块20可包含多个发光二极管芯片24，所述多个发光二极管芯片24设在所述多个焊盘22上且例如通过所述多个开口231来电性连接所述多个焊盘22，其中所述多个发光二极管芯片24各具有一芯片尺寸24A，所述芯片尺寸小于或等于对应的所述开口尺寸。所述多个发光二极管芯片24可发出光线241，并且所述光线241可通过所述反射图案层23的反射以增加所述背光模块20的亮度。在一范例中，所述芯片尺寸24A介于100至500微米之间(例如150微米、200微米、250微米、300微米、350微米、400微米或450微米)。\n\n[0031]再次说明的是对于所述焊盘尺寸22A与对应的所述开口尺寸231A与对应的所述芯片尺寸24A之间的关系。首先，所述开口尺寸231A关联于所述芯片尺寸24A，亦即所述开口尺寸231A是根据所述芯片尺寸24A来设计。例如，所述芯片尺寸24A为300微米时，则所述开口尺寸231A可以是300微米以上。在较佳的范例中，所述芯片尺寸24A与所述开口尺寸231A相等，以避免所述反射层12的比例下降。在决定所述开口尺寸231A后，再决定所述焊盘尺寸22A，例如所述开口尺寸231A为300微米时，所述焊盘尺寸22A可为700微米。由上可知，所述焊盘尺寸22A与对应的所述开口尺寸231A与对应的所述芯片尺寸24A是可以根据需求进行适当调整。\n\n[0032]由上可知，本实用新型实施例的背光模块20是通过扩大焊盘尺寸的方式，并且通过所述反射图案层23来定义所述多个焊盘22的露出区域，进而可在不设置禁制区13的前提下，保证所述多个焊盘22不被所述反射图案层23所覆盖。再者，由于不需设置禁制区13，所以可提升本实用新型实施例的背光模块20的亮度。\n\n[0033]请参照图2C，其是本实用新型另一实施例的背光模块20的剖面示意图。在一实施例中，所述背光模块20更包含至少一光学层25，所述至少一光学层25覆盖所述反射图案层23与所述多个发光二极管芯片24。在一范例中，所述至少一光学层包含一荧光层251(例如可包含透明硅胶及萤光颗粒)、一扩散层252与一增亮层253中的至少一个。要提到的是，所述荧光层251、所述扩散层252与所述增亮层253所使用的材质与制作方式例如可参考一般的背光模块中所使用的荧光层、扩散层与增亮层的材质与制作方式，故不再赘述。\n\n[0034]请参照图3，其是本实用新型一实施例的液晶显示器30的剖面示意图。本实用新型另一实施例提出一种液晶显示器30，所述液晶显示器30包含有上述任一实施例的背光模块20。在一实施例中，所述液晶显示器30还可包含一般液晶显示器的其他构件，例如一显示模块31，其中所述背光模块20所产生的光线可穿过所述显示模块31，进而显示所述液晶显示器20的图像或影像。\n\n[0035]由上可知，本实用新型实施例的液晶显示器30的采用上述的背光模块20。背光模块20是通过扩大焊盘尺寸的方式，并且通过所述反射图案层23来定义所述多个焊盘22的露出区域，进而可在不设置禁制区13的前提下，保证所述多个焊盘22不被所述反射图案层23所覆盖。再者，由于不需设置禁制区13，所以可提升背光模块20的亮度。因此，可提升包含有背光模块20的本实用新型实施例的液晶显示器30的亮度。\n\n[0036]本实用新型已由上述相关实施例加以描述，然而上述实施例仅为实施本实用新型的范例。必需指出的是，已公开的实施例并未限制本实用新型的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本实用新型的范围内。');
INSERT INTO `os_patent_instruction_text` VALUES (11003, 24057, '技术领域\n\n[0001]本实用新型涉及显示技术领域，尤指一种薄型背光模组。\n\n背景技术\n\n[0002]由于电子产品都朝着轻、薄、短、小的目标发展，薄型化概念已成为显示装置持续努力的方向。因薄型化的趋势，显示装置的厚度相应的受到限制，而显示装置薄型化与否的关键因素之一是背光模组的厚度。LED已经广泛用于液晶显示的背光模组，现有的LED背光模组主要分为两种型式，一是侧入式(edge-lit type)，另一是直下式(direct-lit type)。\n\n[0003]直下式LED背光模组具有窄边框的优点，在大尺寸显示领域得到广泛的应用，但却具有厚度增加的问题。若采用小尺寸的迷你发光二极体(mini-LED) 以更小的间距(pitch)排列则可获得较小的混光距离，达到小尺寸直下式背光源实现轻、薄、窄的可能性。然而更小的间距意味着单一背光需要采用更多颗mini-LED，因而产生增加成本的问题。\n\n[0004]此外，目前小尺寸显示器采用侧入式LED背光源，由于LED本身具有一定厚度，需要通过导光板等元件将光线均匀扩散，避免近光处产生热点 (hotspot)现象，因此需要一定的混光距离。然而为了缩短混光距离实现降低厚度的需求，但通常降低混光距离又会伴随着背光效率的急剧衰减的问题，因此如何有效缩短混光距离、达到全面屏的需求，而且成本又不增加的情况是业者亟须挑战的课题。\n\n[0005]实用新型内容\n\n[0006]有鉴于此，本实用新型提供一种薄型背光模组，以解决现有技术所存在厚度增加，混光距离不足，无法实现将发光源的正面光线最大程度引出的问题。\n\n[0007]本实用新型的目的在于提供一种薄型背光模组，通过在荧光层表面设置表面微结构与粒子微结构，共同构成散设发光源光线的引导层，从而能够实现更小的混光距离与超薄的背光模组厚度。\n\n[0008]为达成前述目的，本实用新型提供一种薄型背光模组，包括驱动基板、多个发光源、荧光层及多个粒子微结构。每一所述发光源阵列布设于所述驱动基板上。所述荧光层表面设置有多个表面微结构，每一所述表面微结构对应每一所述发光源。每一所述粒子微结构对应每一所述表面微结构设置，其中所述粒子微结构与所述表面微结构共同构成散设所述发光源光线的引导层。\n\n[0009]在一实施例中，所述粒子微结构包括一定浓度的雾度粒子，所述浓度介于10-90％，且所述粒子微结构的厚度介于1-100微米(μm)。\n\n[0010]在一实施例中，所述表面微结构的中心对应所述发光源的中心设置，且所述表面微结构的中心至所述荧光层的表面的连接面为斜面或弧面。\n\n[0011]在一实施例中，所述表面微结构的中心至所述荧光层的表面的长度为 50-500微米(μm)，且所述表面微结构的厚度为5-100微米(μm)。\n\n[0012]在一实施例中，所述发光源为迷你发光二极体(Mini LED)或微发光二极体(MicroLED)，所述荧光层包括透光胶和与所述透光胶混合的荧光粉粒子、量子点颗粒或雾度粒子其中之一，所述驱动基板为柔性电路板(FPC)或印刷电路板(PCB)。\n\n[0013]在一实施例中，还包括反射层、扩散层及增亮层，所述反射层设置于所述驱动基板上且位于二相邻的所述发光源之间，所述扩散层设置于所述荧光层上，所述增亮层设置于所述扩散层上，其中每一所述发光源的尺寸介于 100-1000微米(μm)，二相邻的所述发光源的间距介于100-2000微米(μm)。\n\n[0014]本实用新型还有如下功效，本实用新型在阵列布设的发光源上方，通过热压方式在荧光层上设置表面微结构，然后在表面微结构上通过喷涂或印刷的方式设置包含一定浓度雾度的粒子微结构，增强光线扩散作用，达到最大化程度将发光源的光线导向四周、扩大光形，以及降低背光模组混光厚度的目的。此外，所述表面微结构与雾度粒子微结构制作方法与现有LED封装工艺相兼容，并不需要引入新的设备，具有高效节省成本、亮度效率较高且实现更小混光距离的优势。\n\n附图说明\n\n[0015]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是实用新型的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0016]图1是本实用新型薄型背光模组的剖面示意图；\n\n[0017]图2是本实用新型薄型背光模组的表面微结构的示意图；\n\n[0018]图3是本实用新型薄型背光模组的表面微结构的另一示意图；及\n\n[0019]图4是本实用新型薄型背光模组的引导层的示意图。\n\n具体实施方式\n\n[0020]在具体实施方式中提及“实施例”意指结合实施例描述的特定特征、结构或特性可以包含在本实用新型的至少一个实施例中。在说明书中的不同位置出现的相同用语并非必然被限制为相同的实施方式，而应当理解为与其它实施例互为独立的或备选的实施方式。在本实用新型提供的实施例所公开的技术方案启示下，本领域的普通技术人员应理解本实用新型所描述的实施例可具有其他符合本实用新型构思的技术方案结合或变化。\n\n[0021]以下各实施例的说明是参考附加的图式，用以例示本实用新型可用以实施的特定实施例。本实用新型所提到的方向用语，例如[上]、[下]、[前]、 [后]、[左]、[右]、[内]、[外]、[侧面]、[竖直]、[水平]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本实用新型，而非用以限制本实用新型。在图中，结构相似的单元是用以相同标号表示。\n\n[0022]请参照图1至图4所示，本实用新型提供一种薄型背光模组，包括驱动基板1、多个发光源2、荧光层3及多个粒子微结构5。如图所示的薄型背光模组较佳为直下式背光模组，然而在其他不同的实施例中，薄型背光模组也可应用在侧入式或其他适合的背光模组中。具体而言，将相关微结构工艺用于侧入式背光的线光源lightbar也可以适用，同样有利于降低混光距离，从而实现窄边框的作用。\n\n[0023]每一所述发光源2阵列布设于所述驱动基板1上。所述荧光层3表面设置有多个表面微结构4，每一所述表面微结构4对应每一所述发光源2。每一所述粒子微结构5对应每一所述表面微结构4设置，其中所述粒子微结构5 与所述表面微结构4共同构成散设所述发光源2光线的引导层6。\n\n[0024]在如图2至图4所示的实施例中，所述表面微结构4的中心对应所述发光源2的中心设置，即对应所述发光源2的中心呈对称设置。所述表面微结构4的中心至所述荧光层3的表面的连接面为斜面或弧面。所述表面微结构 4所形成的斜面或弧面能够有效地将光线往两侧射出，避免光线过多的重新进入所述发光源2而造成二次吸收。\n\n[0025]所述表面微结构4的中心至所述荧光层3的表面的长度41，通常近似等于所述发光源2的边长一半，亦即为50-500微米(μm)，且所述表面微结构 4的厚度42为5-100微米(μm)。所述粒子微结构5包括一定浓度的雾度粒子(Haze Particles)为液滴状的透光液体，使所述发光源2的光线充分扩散。在此所述的浓度介于10-90％，且所述粒子微结构5的厚度52介于1-100微米(μm)。具雾度的所述粒子微结构5在与所述表面微结构4形成的引导层 6，有利地将发光源2发出的光线更有序地导向四周，充分地将光线散射，增强整体光线的出光光形(Spatial distribution)，有效降低混光距离。\n\n[0026]在本实用新型的一实施例中，所述发光源2为迷你发光二极体(mini-LED)、微发光二极体(micro-LED)或其他小型发光二极体。当相邻的所述发光源2的间距越远，降低背光模组的整体厚度则会越明显。所述荧光层 3包括透光胶31和与所述透光胶31混合的荧光粉粒子32、量子点颗粒或雾度粒子其中之一，其中透光胶31例如有机硅胶等。所述驱动基板1可为柔性电路板(FPC)或印刷电路板(PCB)，视需要而改变。\n\n[0027]此外，如图1所示，还包括反射层7、扩散层8及增亮层9。所述反射层 7设置于所述驱动基板1上且位于二相邻的所述发光源2之间，以增加光线的折射回收利用。所述扩散层8设置于所述荧光层3上。所述增亮层9设置于所述扩散层8上，所述的扩散层8及增亮层9均为背光模组现有技术，在此不多加赘述。每一所述发光源2的尺寸介于100-1000微米(μm)，二相邻的所述发光源2的间距介于100-2000微米(μm)。\n\n[0028]所述表面微结构与所述雾度粒子微结构共同构成散设所述发光源光线的引导层，所述引导层能够增强光线扩散作用且其制作方式与现有的LED封装制程相兼容，并不需要引入新的制作设备，具有节省成本、亮度效率较高且实现更小混光距离的优势。\n\n[0029]因此，本实用新型采用一种超薄面发光源，例如蓝光mini-LED阵列，通过钢网掩膜工艺在mini-LED出光面涂覆或喷墨打印含有荧光粉粒子等的有机硅胶材料，所述有机硅胶材料在高温下mini-LED表面形成液滴状并且在降温过程中固化。所述液滴状的mini-LED的光形(光线射出的形状)能够展开，使背光模组厚度有效降低。\n\n[0030]综上所述，虽然本实用新型结合其具体实施例而被描述，应该理解的是，许多替代、修改及变化对于那些本领域的技术人员将是显而易见的。因此，其意在包含落入所附权利要求书的范围内的所有替代、修改及变化。', '技术领域\n\n[0001]本实用新型涉及显示技术领域，尤指一种薄型背光模组。\n\n背景技术\n\n[0002]由于电子产品都朝着轻、薄、短、小的目标发展，薄型化概念已成为显示装置持续努力的方向。因薄型化的趋势，显示装置的厚度相应的受到限制，而显示装置薄型化与否的关键因素之一是背光模组的厚度。LED已经广泛用于液晶显示的背光模组，现有的LED背光模组主要分为两种型式，一是侧入式(edge-lit type)，另一是直下式(direct-lit type)。\n\n[0003]直下式LED背光模组具有窄边框的优点，在大尺寸显示领域得到广泛的应用，但却具有厚度增加的问题。若采用小尺寸的迷你发光二极体(mini-LED) 以更小的间距(pitch)排列则可获得较小的混光距离，达到小尺寸直下式背光源实现轻、薄、窄的可能性。然而更小的间距意味着单一背光需要采用更多颗mini-LED，因而产生增加成本的问题。\n\n[0004]此外，目前小尺寸显示器采用侧入式LED背光源，由于LED本身具有一定厚度，需要通过导光板等元件将光线均匀扩散，避免近光处产生热点 (hotspot)现象，因此需要一定的混光距离。然而为了缩短混光距离实现降低厚度的需求，但通常降低混光距离又会伴随着背光效率的急剧衰减的问题，因此如何有效缩短混光距离、达到全面屏的需求，而且成本又不增加的情况是业者亟须挑战的课题。\n\n[0005]实用新型内容\n\n[0006]有鉴于此，本实用新型提供一种薄型背光模组，以解决现有技术所存在厚度增加，混光距离不足，无法实现将发光源的正面光线最大程度引出的问题。\n\n[0007]本实用新型的目的在于提供一种薄型背光模组，通过在荧光层表面设置表面微结构与粒子微结构，共同构成散设发光源光线的引导层，从而能够实现更小的混光距离与超薄的背光模组厚度。\n\n[0008]为达成前述目的，本实用新型提供一种薄型背光模组，包括驱动基板、多个发光源、荧光层及多个粒子微结构。每一所述发光源阵列布设于所述驱动基板上。所述荧光层表面设置有多个表面微结构，每一所述表面微结构对应每一所述发光源。每一所述粒子微结构对应每一所述表面微结构设置，其中所述粒子微结构与所述表面微结构共同构成散设所述发光源光线的引导层。\n\n[0009]在一实施例中，所述粒子微结构包括一定浓度的雾度粒子，所述浓度介于10-90％，且所述粒子微结构的厚度介于1-100微米(μm)。\n\n[0010]在一实施例中，所述表面微结构的中心对应所述发光源的中心设置，且所述表面微结构的中心至所述荧光层的表面的连接面为斜面或弧面。\n\n[0011]在一实施例中，所述表面微结构的中心至所述荧光层的表面的长度为 50-500微米(μm)，且所述表面微结构的厚度为5-100微米(μm)。\n\n[0012]在一实施例中，所述发光源为迷你发光二极体(Mini LED)或微发光二极体(MicroLED)，所述荧光层包括透光胶和与所述透光胶混合的荧光粉粒子、量子点颗粒或雾度粒子其中之一，所述驱动基板为柔性电路板(FPC)或印刷电路板(PCB)。\n\n[0013]在一实施例中，还包括反射层、扩散层及增亮层，所述反射层设置于所述驱动基板上且位于二相邻的所述发光源之间，所述扩散层设置于所述荧光层上，所述增亮层设置于所述扩散层上，其中每一所述发光源的尺寸介于 100-1000微米(μm)，二相邻的所述发光源的间距介于100-2000微米(μm)。\n\n[0014]本实用新型还有如下功效，本实用新型在阵列布设的发光源上方，通过热压方式在荧光层上设置表面微结构，然后在表面微结构上通过喷涂或印刷的方式设置包含一定浓度雾度的粒子微结构，增强光线扩散作用，达到最大化程度将发光源的光线导向四周、扩大光形，以及降低背光模组混光厚度的目的。此外，所述表面微结构与雾度粒子微结构制作方法与现有LED封装工艺相兼容，并不需要引入新的设备，具有高效节省成本、亮度效率较高且实现更小混光距离的优势。\n\n附图说明\n\n[0015]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是实用新型的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0016]图1是本实用新型薄型背光模组的剖面示意图；\n\n[0017]图2是本实用新型薄型背光模组的表面微结构的示意图；\n\n[0018]图3是本实用新型薄型背光模组的表面微结构的另一示意图；及\n\n[0019]图4是本实用新型薄型背光模组的引导层的示意图。\n\n具体实施方式\n\n[0020]在具体实施方式中提及“实施例”意指结合实施例描述的特定特征、结构或特性可以包含在本实用新型的至少一个实施例中。在说明书中的不同位置出现的相同用语并非必然被限制为相同的实施方式，而应当理解为与其它实施例互为独立的或备选的实施方式。在本实用新型提供的实施例所公开的技术方案启示下，本领域的普通技术人员应理解本实用新型所描述的实施例可具有其他符合本实用新型构思的技术方案结合或变化。\n\n[0021]以下各实施例的说明是参考附加的图式，用以例示本实用新型可用以实施的特定实施例。本实用新型所提到的方向用语，例如[上]、[下]、[前]、 [后]、[左]、[右]、[内]、[外]、[侧面]、[竖直]、[水平]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本实用新型，而非用以限制本实用新型。在图中，结构相似的单元是用以相同标号表示。\n\n[0022]请参照图1至图4所示，本实用新型提供一种薄型背光模组，包括驱动基板1、多个发光源2、荧光层3及多个粒子微结构5。如图所示的薄型背光模组较佳为直下式背光模组，然而在其他不同的实施例中，薄型背光模组也可应用在侧入式或其他适合的背光模组中。具体而言，将相关微结构工艺用于侧入式背光的线光源lightbar也可以适用，同样有利于降低混光距离，从而实现窄边框的作用。\n\n[0023]每一所述发光源2阵列布设于所述驱动基板1上。所述荧光层3表面设置有多个表面微结构4，每一所述表面微结构4对应每一所述发光源2。每一所述粒子微结构5对应每一所述表面微结构4设置，其中所述粒子微结构5 与所述表面微结构4共同构成散设所述发光源2光线的引导层6。\n\n[0024]在如图2至图4所示的实施例中，所述表面微结构4的中心对应所述发光源2的中心设置，即对应所述发光源2的中心呈对称设置。所述表面微结构4的中心至所述荧光层3的表面的连接面为斜面或弧面。所述表面微结构 4所形成的斜面或弧面能够有效地将光线往两侧射出，避免光线过多的重新进入所述发光源2而造成二次吸收。\n\n[0025]所述表面微结构4的中心至所述荧光层3的表面的长度41，通常近似等于所述发光源2的边长一半，亦即为50-500微米(μm)，且所述表面微结构 4的厚度42为5-100微米(μm)。所述粒子微结构5包括一定浓度的雾度粒子(Haze Particles)为液滴状的透光液体，使所述发光源2的光线充分扩散。在此所述的浓度介于10-90％，且所述粒子微结构5的厚度52介于1-100微米(μm)。具雾度的所述粒子微结构5在与所述表面微结构4形成的引导层 6，有利地将发光源2发出的光线更有序地导向四周，充分地将光线散射，增强整体光线的出光光形(Spatial distribution)，有效降低混光距离。\n\n[0026]在本实用新型的一实施例中，所述发光源2为迷你发光二极体(mini-LED)、微发光二极体(micro-LED)或其他小型发光二极体。当相邻的所述发光源2的间距越远，降低背光模组的整体厚度则会越明显。所述荧光层 3包括透光胶31和与所述透光胶31混合的荧光粉粒子32、量子点颗粒或雾度粒子其中之一，其中透光胶31例如有机硅胶等。所述驱动基板1可为柔性电路板(FPC)或印刷电路板(PCB)，视需要而改变。\n\n[0027]此外，如图1所示，还包括反射层7、扩散层8及增亮层9。所述反射层 7设置于所述驱动基板1上且位于二相邻的所述发光源2之间，以增加光线的折射回收利用。所述扩散层8设置于所述荧光层3上。所述增亮层9设置于所述扩散层8上，所述的扩散层8及增亮层9均为背光模组现有技术，在此不多加赘述。每一所述发光源2的尺寸介于100-1000微米(μm)，二相邻的所述发光源2的间距介于100-2000微米(μm)。\n\n[0028]所述表面微结构与所述雾度粒子微结构共同构成散设所述发光源光线的引导层，所述引导层能够增强光线扩散作用且其制作方式与现有的LED封装制程相兼容，并不需要引入新的制作设备，具有节省成本、亮度效率较高且实现更小混光距离的优势。\n\n[0029]因此，本实用新型采用一种超薄面发光源，例如蓝光mini-LED阵列，通过钢网掩膜工艺在mini-LED出光面涂覆或喷墨打印含有荧光粉粒子等的有机硅胶材料，所述有机硅胶材料在高温下mini-LED表面形成液滴状并且在降温过程中固化。所述液滴状的mini-LED的光形(光线射出的形状)能够展开，使背光模组厚度有效降低。\n\n[0030]综上所述，虽然本实用新型结合其具体实施例而被描述，应该理解的是，许多替代、修改及变化对于那些本领域的技术人员将是显而易见的。因此，其意在包含落入所附权利要求书的范围内的所有替代、修改及变化。');
INSERT INTO `os_patent_instruction_text` VALUES (11004, 24058, '技术领域\n\n[0001]本实用新型涉及显示装置领域，尤其涉及一种背光模组及采用该背光模组的显示装置。\n\n背景技术\n\n[0002]HDR(High Dynamic Range)已成为高阶显示的标配，TFT-LCD显示技术在色域、对比度、亮度等指标不断提升，以此来抗衡OLED显示技术。但TFT-LCD技术中高色域一般会牺牲亮度，且静态对比度也陷入瓶颈。因此侧入式背光搭配TFT-LCD性能已很难提升。\n\n[0003]为了满足高色域，各厂商已在开发QD-BL、QD-CF等技术。为了提升对比度，采用了直下式面光源分区技术，将背光源划分为多区域独立控制单元，即将背光源划分为多个Mini-LED，根据每一帧图像的亮、暗分布精确的调整对应背光区域的亮度，提高动态对比度，显著提升画面显示质量。\n\n[0004]但该结构的缺点在于，Mini-LED存在LED灯影遮蔽不佳的问题。目前解决LED灯影通常有三种方法：1、增加LED颗数，但会增加成本；2、采用高雾度的扩散板遮蔽，但会牺牲穿透率；2、增加LED和膜片之间的间隙(air Gap)，但膜材支撑难度加大，会增加模组整体厚度，且不适用于窄边框产品，产品整体抗震性能差。\n\n实用新型内容\n\n[0005]本实用新型所要解决的技术问题是，提供一种背光模组及采用该背光模组的显示装置，其能够有效地优化LED灯影，提升Mini-LED整体显示效果。\n\n[0006]为了解决上述问题，本实用新型提供了一种背光模组，包括多个LED发光芯片及一量子点膜，所述量子点膜设置在所述LED发光芯片的出光侧，在所述LED发光芯片的出光侧还设置有多个扩散块，所述扩散块与所述LED芯片一一对应。\n\n[0007]在一实施例中，所述扩散块设置在所述量子点膜朝向所述LED发光芯片的一侧。\n\n[0008]在一实施例中，所述扩散块的宽度满足如下公式：W＝2*H*tan(1/2*α)，其中，W是所述扩散块的宽度，H是所述LED发光芯片至所述量子点膜的距离，α是所述LED发光芯片的光型角度。\n\n[0009]在一实施例中，所述扩散块设置在所述量子点膜背离所述LED发光芯片的一侧。\n\n[0010]在一实施例中，所述扩散块的宽度满足如下公式：W＝2*(H+H1)*tan(1/2*α)，其中， W是所述扩散块的宽度，H是所述LED发光芯片至所述量子点膜的距离，H1是所述量子点膜的厚度，α是所述LED发光芯片的光型角度。\n\n[0011]在一实施例中，所述扩散块内部具有多个粒子，所述粒子的粒径大于15微米。\n\n[0012]在一实施例中，所述扩散块的雾度大于80％。\n\n[0013]在一实施例中，所述LED发光芯片的宽度小于所述扩散块的宽度。\n\n[0014]在一实施例中，所述背光模组还包括至少一扩散膜，所述扩散膜设置在所述量子点膜背离所述LED发光芯片的一侧。\n\n[0015]本实用新型一种显示装置，其特征在于，包括一上述的背光模组及一设置在所述背光模组上的LCD显示面板。\n\n[0016]本实用新型的优点在于，每一个LED发光芯片对应一个扩散块，使得每一个所述LED 发光芯片发射的光被进一步扩散，则相邻的两个所述LED发光芯片之间的间隙被扩散光补充，从而能够有效地优化LED灯影，提升Mini-LED整体显示效果；本实用新型背光模组在尽量不增加模组厚度，减少模组功耗损失的前提下，优化Mini-LED灯影问题；且在相同厚度下，可实现LED减灯设计，降低中、大尺寸Mini-LED模组成本。\n\n附图说明\n\n[0017]图1是本实用新型背光模组的第一实施例的爆炸结构示意；\n\n[0018]图2是本实用新型背光模组的第一实施例的局部结构示意图；\n\n[0019]图3是本实用新型背光模组的第二实施例的局部结构示意图；\n\n[0020]图4是本实用新型显示面板的结构示意图。\n\n具体实施方式\n\n[0021]下面结合附图对本实用新型提供的背光模组及采用该背光模组的显示装置的具体实施方式做详细说明。\n\n[0022]图1是本实用新型背光模组的第一实施例的爆炸结构示意，图2是本实用新型背光模组的第一实施例的局部结构示意图。请参阅图1及图2，本实用新型背光模组包括多个LED发光芯片10及一量子点膜11。\n\n[0023]所述LED发光芯片10包括但不限于蓝光芯片，其作为所述背光模组的光源使用。多个所述LED发光芯片10呈矩阵排布，其中，所述LED发光芯片10的尺寸及数量可根据设计需求进行选择。其中，多个所述LED发光芯片10可设置在一光源电路板14上。\n\n[0024]所述量子点膜11设置在所述LED发光芯片10的出光侧。具体的说，在所述OLED发光芯片10的出光侧，在所述量子点膜11笼罩全部的所述OLED发光芯片10，且所述量子点膜11与所述OLED发光芯片10之间具有一距离。所述量子点膜11用于将所述LkED发光芯片发出的光转换成白光。在本实施例中，所述所述LED发光芯片10为蓝光芯片，则在所述LED发光芯片10发射的光照射在量子点膜11后再出射，其出射的光为白光。其中，所述量子点膜11的结构为背光模组的常规结构，不再赘述。\n\n[0025]在所述LED发光芯片10的出光侧还设置有多个扩散块12，所述扩散块12与所述623芯片10一一对应。具体的说，一个所述LED芯片10对应一个扩散块12。所述扩散块12 用于将所述LED发光芯片10发射的光扩散。本实用新型背光模组的优点在于，每一个所述LED发光芯片10对应一个扩散块12，使得每一个所述LED发光芯片10发射的光被进一步扩散，则相邻的两个所述LED发光芯片10之间的光间隙被扩散光补充，从而能够有效地优化LED灯影，提升Mini-LED整体显示效果，其基本不增加Mini-LED整体模组的厚度，实现产品轻薄化。\n\n[0026]在第一实施例中，所述扩散块12设置在所述量子点膜11朝向所述LED发光芯片10的一侧。具体的说，所述扩散块12设置在所述量子点膜11的表面，该表面朝向所述LED 发光芯片10。为了进一步加强所述扩散块12的扩散效果，在本实施例中，所述扩散块12 的宽度满足一定条件。具体的说，在本实施例中，请参阅图2，所述扩散块12的宽度满足如下公式：\n\n[0027]W＝2*H*tan(1/2*α)\n\n[0028]其中，W是所述扩散块12的宽度，H是所述LED发光芯片10至所述量子点膜11的距离，α是所述LED发光芯片10的光型角度。\n\n[0029]为了进一步使所述LED发光芯片10发射的光扩散，所述扩散块12内部具有多个粒子，所述粒子的粒径大于15微米，以提高所述LED发光芯片10发射的光的扩散效果。所述粒子包括但不限于树脂颗粒。其中，所述扩散块12可采用常规的方法制备。举例说明制备所述扩散块12的方法：a、在溶剂中加入微颗粒，搅拌至微粒子均匀分散到溶剂中为止；b、在a步骤的混合物中加入涂布树脂及固化剂，充分搅拌；c、提供一涂布掩膜，其含有与 Mini-LED间距相对应的网孔，铺上涂布掩膜，将b步骤的混合物均匀的涂布在量子点层上，形成所述扩散块。\n\n[0030]可选地，所述扩散块12的雾度大于80％，以进一步提高所述扩散块12的扩散作用。进一步，所述LED发光芯片10的宽度小于所述扩散块12的宽度，以保证所述LED发光芯片10发射的光被扩散至两个所述LED发光芯片10的交界处。\n\n[0031]进一步，所述背光模组还包括至少一扩散膜13。所述扩散膜13设置在所述量子点膜 11背离所述LED发光芯片10的一侧。具体的说，在本实施例中，在所述量子点膜11背离所述LED发光芯片10的一侧设置有两个扩散膜13。本实用新型背光模组的其他实施例中，在所述量子点膜11背离所述LED发光芯片10的一侧也可以设置其他光学元件，以改善背光模组的发光性能。\n\n[0032]图3是本实用新型背光模组的第二实施例的局部结构示意图。请参阅图3，本实用新型第二实施例与第一实施例的区别在于所述扩散块设置的位置及尺寸不同。具体的说，在第二实施例中，所述扩散块12设置在所述量子点膜11背离所述LED发光芯片10的一侧，即所述扩散块12设置在所述量子点膜11的一表面，该表面背离所述LED发光芯片10，也就是说，在所述扩散块12与所述LED发光芯片10之间设置有所述量子点膜11，且所述量子点膜11至所述LED发光芯片10具有一距离，而所述扩散块12则设置在所述量子点膜 11的表面。为了进一步加强所述扩散块12的扩散效果，在本实施例中，所述扩散块12的宽度满足一定条件。具体的说，在本实施例中，请参阅图3，所述扩散块12的宽度满足如下公式：\n\n[0033]W＝2*(H+H1)*tan(1/2*α)\n\n[0034]其中，W是所述扩散块的宽度，H是所述LED发光芯片至所述量子点膜的距离，H1 是所述量子点膜的厚度，α是所述LED发光芯片的光型角度。\n\n[0035]本实用新型还提供一种显示装置。图4是本实用新型显示面板的结构示意图。请参阅图4，本实用新型显示面板其包括一背光模组100及一设置在所述背光模组100上的LCD显示面板200。所述背光模组100的结构与上述的背光模组的结构相同，所述背光模组100为所述LCD显示面板200提供背光源。\n\n[0036]本实用新型显示装置的优点在于，背光模组100的相邻的两个所述LED发光芯片之间的光间隙被扩散光补充，从而能够有效地优化LED灯影，提升显示装置整体显示效果，且基本不增加显示装置的厚度，在提升显示装置整体显示效果的同时还能够不影响产品的厚度。\n\n[0037]以上所述仅是本实用新型的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本实用新型原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本实用新型的保护范围。', '技术领域\n\n[0001]本实用新型涉及显示装置领域，尤其涉及一种背光模组及采用该背光模组的显示装置。\n\n背景技术\n\n[0002]HDR(High Dynamic Range)已成为高阶显示的标配，TFT-LCD显示技术在色域、对比度、亮度等指标不断提升，以此来抗衡OLED显示技术。但TFT-LCD技术中高色域一般会牺牲亮度，且静态对比度也陷入瓶颈。因此侧入式背光搭配TFT-LCD性能已很难提升。\n\n[0003]为了满足高色域，各厂商已在开发QD-BL、QD-CF等技术。为了提升对比度，采用了直下式面光源分区技术，将背光源划分为多区域独立控制单元，即将背光源划分为多个Mini-LED，根据每一帧图像的亮、暗分布精确的调整对应背光区域的亮度，提高动态对比度，显著提升画面显示质量。\n\n[0004]但该结构的缺点在于，Mini-LED存在LED灯影遮蔽不佳的问题。目前解决LED灯影通常有三种方法：1、增加LED颗数，但会增加成本；2、采用高雾度的扩散板遮蔽，但会牺牲穿透率；2、增加LED和膜片之间的间隙(air Gap)，但膜材支撑难度加大，会增加模组整体厚度，且不适用于窄边框产品，产品整体抗震性能差。\n\n实用新型内容\n\n[0005]本实用新型所要解决的技术问题是，提供一种背光模组及采用该背光模组的显示装置，其能够有效地优化LED灯影，提升Mini-LED整体显示效果。\n\n[0006]为了解决上述问题，本实用新型提供了一种背光模组，包括多个LED发光芯片及一量子点膜，所述量子点膜设置在所述LED发光芯片的出光侧，在所述LED发光芯片的出光侧还设置有多个扩散块，所述扩散块与所述LED芯片一一对应。\n\n[0007]在一实施例中，所述扩散块设置在所述量子点膜朝向所述LED发光芯片的一侧。\n\n[0008]在一实施例中，所述扩散块的宽度满足如下公式：W＝2*H*tan(1/2*α)，其中，W是所述扩散块的宽度，H是所述LED发光芯片至所述量子点膜的距离，α是所述LED发光芯片的光型角度。\n\n[0009]在一实施例中，所述扩散块设置在所述量子点膜背离所述LED发光芯片的一侧。\n\n[0010]在一实施例中，所述扩散块的宽度满足如下公式：W＝2*(H+H1)*tan(1/2*α)，其中， W是所述扩散块的宽度，H是所述LED发光芯片至所述量子点膜的距离，H1是所述量子点膜的厚度，α是所述LED发光芯片的光型角度。\n\n[0011]在一实施例中，所述扩散块内部具有多个粒子，所述粒子的粒径大于15微米。\n\n[0012]在一实施例中，所述扩散块的雾度大于80％。\n\n[0013]在一实施例中，所述LED发光芯片的宽度小于所述扩散块的宽度。\n\n[0014]在一实施例中，所述背光模组还包括至少一扩散膜，所述扩散膜设置在所述量子点膜背离所述LED发光芯片的一侧。\n\n[0015]本实用新型一种显示装置，其特征在于，包括一上述的背光模组及一设置在所述背光模组上的LCD显示面板。\n\n[0016]本实用新型的优点在于，每一个LED发光芯片对应一个扩散块，使得每一个所述LED 发光芯片发射的光被进一步扩散，则相邻的两个所述LED发光芯片之间的间隙被扩散光补充，从而能够有效地优化LED灯影，提升Mini-LED整体显示效果；本实用新型背光模组在尽量不增加模组厚度，减少模组功耗损失的前提下，优化Mini-LED灯影问题；且在相同厚度下，可实现LED减灯设计，降低中、大尺寸Mini-LED模组成本。\n\n附图说明\n\n[0017]图1是本实用新型背光模组的第一实施例的爆炸结构示意；\n\n[0018]图2是本实用新型背光模组的第一实施例的局部结构示意图；\n\n[0019]图3是本实用新型背光模组的第二实施例的局部结构示意图；\n\n[0020]图4是本实用新型显示面板的结构示意图。\n\n具体实施方式\n\n[0021]下面结合附图对本实用新型提供的背光模组及采用该背光模组的显示装置的具体实施方式做详细说明。\n\n[0022]图1是本实用新型背光模组的第一实施例的爆炸结构示意，图2是本实用新型背光模组的第一实施例的局部结构示意图。请参阅图1及图2，本实用新型背光模组包括多个LED发光芯片10及一量子点膜11。\n\n[0023]所述LED发光芯片10包括但不限于蓝光芯片，其作为所述背光模组的光源使用。多个所述LED发光芯片10呈矩阵排布，其中，所述LED发光芯片10的尺寸及数量可根据设计需求进行选择。其中，多个所述LED发光芯片10可设置在一光源电路板14上。\n\n[0024]所述量子点膜11设置在所述LED发光芯片10的出光侧。具体的说，在所述OLED发光芯片10的出光侧，在所述量子点膜11笼罩全部的所述OLED发光芯片10，且所述量子点膜11与所述OLED发光芯片10之间具有一距离。所述量子点膜11用于将所述LkED发光芯片发出的光转换成白光。在本实施例中，所述所述LED发光芯片10为蓝光芯片，则在所述LED发光芯片10发射的光照射在量子点膜11后再出射，其出射的光为白光。其中，所述量子点膜11的结构为背光模组的常规结构，不再赘述。\n\n[0025]在所述LED发光芯片10的出光侧还设置有多个扩散块12，所述扩散块12与所述623芯片10一一对应。具体的说，一个所述LED芯片10对应一个扩散块12。所述扩散块12 用于将所述LED发光芯片10发射的光扩散。本实用新型背光模组的优点在于，每一个所述LED发光芯片10对应一个扩散块12，使得每一个所述LED发光芯片10发射的光被进一步扩散，则相邻的两个所述LED发光芯片10之间的光间隙被扩散光补充，从而能够有效地优化LED灯影，提升Mini-LED整体显示效果，其基本不增加Mini-LED整体模组的厚度，实现产品轻薄化。\n\n[0026]在第一实施例中，所述扩散块12设置在所述量子点膜11朝向所述LED发光芯片10的一侧。具体的说，所述扩散块12设置在所述量子点膜11的表面，该表面朝向所述LED 发光芯片10。为了进一步加强所述扩散块12的扩散效果，在本实施例中，所述扩散块12 的宽度满足一定条件。具体的说，在本实施例中，请参阅图2，所述扩散块12的宽度满足如下公式：\n\n[0027]W＝2*H*tan(1/2*α)\n\n[0028]其中，W是所述扩散块12的宽度，H是所述LED发光芯片10至所述量子点膜11的距离，α是所述LED发光芯片10的光型角度。\n\n[0029]为了进一步使所述LED发光芯片10发射的光扩散，所述扩散块12内部具有多个粒子，所述粒子的粒径大于15微米，以提高所述LED发光芯片10发射的光的扩散效果。所述粒子包括但不限于树脂颗粒。其中，所述扩散块12可采用常规的方法制备。举例说明制备所述扩散块12的方法：a、在溶剂中加入微颗粒，搅拌至微粒子均匀分散到溶剂中为止；b、在a步骤的混合物中加入涂布树脂及固化剂，充分搅拌；c、提供一涂布掩膜，其含有与 Mini-LED间距相对应的网孔，铺上涂布掩膜，将b步骤的混合物均匀的涂布在量子点层上，形成所述扩散块。\n\n[0030]可选地，所述扩散块12的雾度大于80％，以进一步提高所述扩散块12的扩散作用。进一步，所述LED发光芯片10的宽度小于所述扩散块12的宽度，以保证所述LED发光芯片10发射的光被扩散至两个所述LED发光芯片10的交界处。\n\n[0031]进一步，所述背光模组还包括至少一扩散膜13。所述扩散膜13设置在所述量子点膜 11背离所述LED发光芯片10的一侧。具体的说，在本实施例中，在所述量子点膜11背离所述LED发光芯片10的一侧设置有两个扩散膜13。本实用新型背光模组的其他实施例中，在所述量子点膜11背离所述LED发光芯片10的一侧也可以设置其他光学元件，以改善背光模组的发光性能。\n\n[0032]图3是本实用新型背光模组的第二实施例的局部结构示意图。请参阅图3，本实用新型第二实施例与第一实施例的区别在于所述扩散块设置的位置及尺寸不同。具体的说，在第二实施例中，所述扩散块12设置在所述量子点膜11背离所述LED发光芯片10的一侧，即所述扩散块12设置在所述量子点膜11的一表面，该表面背离所述LED发光芯片10，也就是说，在所述扩散块12与所述LED发光芯片10之间设置有所述量子点膜11，且所述量子点膜11至所述LED发光芯片10具有一距离，而所述扩散块12则设置在所述量子点膜 11的表面。为了进一步加强所述扩散块12的扩散效果，在本实施例中，所述扩散块12的宽度满足一定条件。具体的说，在本实施例中，请参阅图3，所述扩散块12的宽度满足如下公式：\n\n[0033]W＝2*(H+H1)*tan(1/2*α)\n\n[0034]其中，W是所述扩散块的宽度，H是所述LED发光芯片至所述量子点膜的距离，H1 是所述量子点膜的厚度，α是所述LED发光芯片的光型角度。\n\n[0035]本实用新型还提供一种显示装置。图4是本实用新型显示面板的结构示意图。请参阅图4，本实用新型显示面板其包括一背光模组100及一设置在所述背光模组100上的LCD显示面板200。所述背光模组100的结构与上述的背光模组的结构相同，所述背光模组100为所述LCD显示面板200提供背光源。\n\n[0036]本实用新型显示装置的优点在于，背光模组100的相邻的两个所述LED发光芯片之间的光间隙被扩散光补充，从而能够有效地优化LED灯影，提升显示装置整体显示效果，且基本不增加显示装置的厚度，在提升显示装置整体显示效果的同时还能够不影响产品的厚度。\n\n[0037]以上所述仅是本实用新型的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本实用新型原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本实用新型的保护范围。');
INSERT INTO `os_patent_instruction_text` VALUES (11005, 24059, '技术领域\n\n[0001]本申请涉及显示领域，特别涉及一种显示装置。\n\n背景技术\n\n[0002]随着液晶显示技术的发展，特别是全面屏技术的发展，目前多数厂商乃是将显示装置的背光模组设置面朝内的开孔，以供屏下摄像头对应放置，并藉此接收来自外界环境的入射光。\n\n[0003]现有技术的显示装置中，当屏下摄像头对应地设置于所述显示装置所具有的背光模组的开孔下方时，所述开孔将仅仅作为所述屏下摄像头用以接收环境光的收发通道。由于所述开孔的内侧并未设置有任何光源提供亮度，使得所述显示装置在使用时，所述背光模组于所述开孔的区域将处于闲置状态而无法提供任何显示效果。\n\n[0004]因此，亟需一种显示装置以解决上述技术问题。\n\n实用新型内容\n\n[0005]本申请提供了一种显示模组，以解决现有显示装置中屏下摄像头区域无法进行显示的技术问题。\n\n[0006]为解决上述问题，本申请提供的技术方案如下：\n\n[0007]本申请提出了一种显示装置，其包括显示面板、位于所述显示面板一侧的背光模组，所述背光模组包括：\n\n[0008]背光单元，开设有背光孔；\n\n[0009]导光环，设于所述背光孔内侧，所述导光环包括远离所述显示面板设置的入光面和靠近所述显示面板设置的出光面，所述导光环用于将进入所述导光环中的光束导向所述背光孔对应的显示面板区域；\n\n[0010]光源部件，用于为所述导光环提供光源。\n\n[0011]在本申请的显示装置中，\n\n[0012]所述光源部件包括驱动电路板及位于所述驱动电路板上的至少一光源，所述光源呈阵列式排布于所述驱动电路板上，所述光源围绕所述背光孔的内侧或外侧分布；\n\n[0013]所述光源一侧朝向所述导光环的入光面。\n\n[0014]在本申请的显示装置中，\n\n[0015]所述出光面所在平面与所述入光面所在平面垂直或呈锐角。\n\n[0016]在本申请的显示装置中，所述导光环还包括一反光面，所述反光面所在平面与所述入光面所在平面垂直或呈一锐角。\n\n[0017]在本申请的显示装置中，\n\n[0018]所述入光面由处于同一平面的至少一菲涅尔透镜一体形成。\n\n[0019]在本申请的显示装置中，\n\n[0020]所述菲涅尔透镜具有至少一个同心布置的环形齿状结构，以及被所述环形齿状结构环绕的凸透镜结构。\n\n[0021]在本申请的显示装置中，\n\n[0022]所述出光面由处于同一平面的至少一微透镜薄膜一体形成；\n\n[0023]所述入光面所在的平面与所述微透镜薄膜的焦点所在平面重合；\n\n[0024]所述入光面设有至少一透光孔，每一透光孔与每一所述微透镜薄膜对应设置。\n\n[0025]在本申请的显示装置中，当所述透光孔与所述微透镜薄膜的焦点重合时，所述光源发出的光线经所述微透镜薄膜折射形成垂直于所述入光面的平行光束；\n\n[0026]当所述透光孔偏离焦点且处于所述微透镜薄膜的焦平面时，所述光源发出的光线经所述微透镜薄膜折射形成与入射面成一定角度的平行光束。\n\n[0027]在本申请的显示装置中，所述导光组件还包括一金属反射层，所述金属反射层设于所述导光环的入光面朝向所述光源一侧；所述透光孔阵列式地排布在所述金属反射层上。\n\n[0028]在本申请的显示装置中，\n\n[0029]所述光源部件还包括一漫反射层，所述漫反射层设于所述驱动电路板上，所述光源暴露在所述漫反射层上。\n\n[0030]在本申请的显示装置中，每一透光孔位于与其对应的每一微透镜薄膜的焦点远离所述导光环中心的一侧。\n\n[0031]在本申请的显示装置中，\n\n[0032]所述光源包括LED光源或mini LED光源中的一种。\n\n[0033]在本申请的显示装置中，所述显示装置还包括位于所述显示模组远离所述显示面板一侧的摄像模组，所述摄像模组与所述背光孔对应；\n\n[0034]与所述摄像模组及所述光源部件电连接的控制部件；\n\n[0035]其中，当所述摄像模组中的摄像头开启时，所述控制部件控制所述光源关闭；\n\n[0036]当所述摄像模组中的摄像头关闭时，所述控制部件控制所述光源开启或关闭。\n\n[0037]在本申请的显示装置中，所述背光模组还包括一光线阻隔膜，所述光线阻隔膜设于所述导光环和所述背光单元之间。\n\n[0038]在本申请的显示装置中，\n\n[0039]所述导光环为透明材质或雾面材质制备。\n\n[0040]在本申请的显示装置中，所述背光单元包括位于背板上的反射片、位于所述反射片上的导光板、位于所述导光板上的扩散片、位于所述扩散片上的下增光片、及位于所述下增光片上的上增光片；\n\n[0041]其中，所述背光孔从下至上依次贯穿所述背板、所述反射片、所述导光板、所述扩散片、所述下增光片和所述上增光片。\n\n[0042]在本申请的显示装置中，所述显示面板包括：\n\n[0043]下偏光片，设于所述背光模组上；\n\n[0044]阵列基板，设于所述下偏光片上；\n\n[0045]彩膜基板，设于所述阵列基板上；以及\n\n[0046]上偏光片，设于所述彩膜基板上；\n\n[0047]其中，所述下偏光片和所述上偏光片在对应所述背光孔位置设有通孔。\n\n[0048]有益效果：本申请通过在摄像模组对应的区域设置一背光孔及在所述背光孔内设置一导光环，使得光源部件提供的光源能通过导光环导向所述背光孔对应的显示面板区域。使得当所述摄像模组中摄像头启动时，所述光源关闭，当所述摄像模组中的摄像头不启动时，所述光源开启或关闭，故能够使所述显示面板上的通孔或盲孔重新具有显示能力，且依旧维持摄像模组的影像质量。\n\n附图说明\n\n[0049]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是实用新型的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0050]图1为本申请显示装置的第一种结构图；\n\n[0051]图2为本申请显示装置的第二种结构图；\n\n[0052]图3为本申请显示装置的第三种结构图；\n\n[0053]图4为本申请显示装置中背光模组的第一种结构示意图；\n\n[0054]图5为本申请显示装置中光源部件的第一种结构示意图；\n\n[0055]图6为本申请显示装置中导光环及光源的结构示意图；\n\n[0056]图7为本申请显示装置中导光环的第一种仰视图；\n\n[0057]图8为本申请显示装置中背光模组的第二种结构示意图；\n\n[0058]图9为本申请显示装置中微透镜薄膜的光路原理示意图；\n\n[0059]图10为本申请显示装置中光源部件的第一种结构示意图；\n\n[0060]图11为本申请显示装置中光源部件的第二种结构示意图；\n\n[0061]图12为本申请显示装置中背光模组的第二种结构示意图；\n\n[0062]图13为本申请显示装置的第四种结构图。\n\n具体实施方式\n\n[0063]以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。\n\n[0064]在现有技术的显示装置中，当屏下摄像头对应地设置于所述显示装置所具有的背光模组的开孔下方时，所述开孔将仅仅作为所述屏下摄像头用以接收环境光的收发通道。由于所述开孔的内侧并未设置有任何光源提供亮度，使得所述显示装置在使用时，所述背光模组于所述开孔的区域将处于闲置状态而无法提供任何显示效果。本申请基于上述技术问题提出了一种显示装置。\n\n[0065]请参阅图1，所述显示装置300包括显示面板200、位于所述显示面板200一侧的背光模组100所述背光模组100包括：\n\n[0066]背光单元110，开设有背光孔120。在本实施例中，所述背光孔120可以为圆形孔。\n\n[0067]导光环130，设于所述背光孔120内侧，所述导光环130包括远离所述显示面板200设置的入光面131和靠近所述显示面板200设置的出光面132，所述导光环130用于将进入所述导光环130中的光束导向所述背光孔120对应的显示面板区域210。所述导光环130的形状及尺寸与所述背光孔120的形状及尺寸相适配。\n\n[0068]光源部件140，用于为所述导光环130提供光源。所述光源部件140的形状及尺寸与所述导光环130的形状及尺寸相适配。\n\n[0069]在本实施例中，所述光源部件140包括驱动电路板141及位于所述驱动电路板141上的至少一光源142，所述光源142呈阵列式排布于所述驱动电路板141上，所述光源围绕所述背光孔的内侧或外侧分布。所述光源142一侧朝向所述导光环130的入光面131。\n\n[0070]在本实施例中，所述显示装置300还可以包括位于所述背光模组100一侧且远离所述显示面板200的摄像模组400，所述摄像模组400与所述背光孔120对应。所述摄像模组400在所述背光单元110上的正投影位于所述背光孔120内。\n\n[0071]在本实施例中，所述显示装置300是否设置有所述摄像模组400，本申请不作具体限制。\n\n[0072]本申请提出了一种显示装置300，包括显示面板200、背光模组100及摄像模组400。所述背光模组100包括背光单元110，开设有背光孔120，所述摄像模组400与所述背光孔120对应；导光环130，设于所述背光孔120内侧，所述导光环130包括入光面131和出光面132，所述导光环130用于将进入所述导光环130中的光束导向所述背光孔120对应的显示面板区域210；光源部件140，用于为所述导光环130提供光源。本申请通过在摄像模组400对应的区域设置一背光孔120及在所述背光孔120内设置一导光环130，使得光源部件140提供的光源能通过导光环130导向所述背光孔120对应的显示面板区域210。使得当所述摄像模组400中摄像头启动时，所述光源142关闭，当所述摄像模组400中的摄像头不启动时，所述光源142开启或关闭，故能够使所述显示面板200上的通孔或盲孔重新具有显示能力，且依旧维持摄像模组400的影像质量。\n\n[0073]下面结合具体实施例对本申请的技术方案进行说明。\n\n[0074]实施例一\n\n[0075]请参阅图1～3，所述出光面132所在平面与所述入光面131所在平面呈锐角。\n\n[0076]请参阅图1，所述出光面132与所述入光面131的夹角为锐角。在实际应用中，所述出光面132与所述入光面131之间的夹角可以为10度、20度、30度、45度、50度、60度、70度、80度等，用来保障从所述入光面131进入的光束。\n\n[0077]在从所述出光面132射出时，向所述背光孔120对应的所述显示面板区域210投射，以补偿所述摄像模组400对应的所述显示面板区域210额外光源，使得显示面板200的这部分区域能够正常显示，且不影响所述摄像模组400的正常工作。\n\n[0078]在本实施例中，所述背光模组100还包括一光线阻隔膜150。所述光线阻隔膜150设于所述导光环130和所述背光单元110之间。所述光线阻隔膜150用于阻隔背光模组100的光线，以及防止在摄像模组400进行摄像时受到所述背光模组100的光源142所发出的光的影响。\n\n[0079]在图1的基础上，所述显示装置300所具有的所述导光环130更进一步依据不同的背光单元110的设计，相应的变化为如图2或图3所示例的剖面结构，以同样可透过所述导光环130的所述出光面132的设置，引导所述光源部件140所发射的光束朝对应于所述背光孔120处的所述显示面板区域210发射，藉此为对应于所述背光孔120处的所述显示面板区域210提供适当的亮度。\n\n[0080]在本实施例中，当所述导光环130设置为图3或图4所具有的剖面结构时，所述导光环130与所述背光单元110的交界处所设置的所述光线阻隔膜150亦将相应地变更其形状，以有效阻隔所述背光单元110内部的光线漏出至所述背光孔120的中心区域，从而避免影响到所述摄像模组400的摄像质量。\n\n[0081]在本实施例中，所述光源142可以包括LED光源或mini LED光源中的一种。下述实施例中的光源部件140可以与本实施例相同。\n\n[0082]在本实施例中，所述导光环130可以为透明材质或雾面材质制备。透明的导光环130可以有效地引导光源部件140所射出的光束通过所述出光面132朝向对应于所述背光孔120处的所述显示面板区域210发射，降低光源部件140的光损现象。下述实施例中的导光环130材料可以与本实施例相同。\n\n[0083]请参阅图1，所述显示装置300还包括控制部件160。\n\n[0084]所述控制部件160分别与所述摄像模组400和所述光源部件140电连接。所述控制部件160用于当所述摄像模组400启动时，使所述光源部件140关闭，使所述摄像模组400可不受干扰地获取外界影像数据。当所述摄像模组400关闭时，则可依据显示面板200的实际显示情况控制所述光源部件140开启或关闭。\n\n[0085]在本实施例中，当所述摄像模组400启动时，所述光源部件140将关闭，以使得所述摄像模组400可不受影响地接收来来自外界的环境光源进行感光。当所述摄像模组400不启动时，所述光源部件140则能够依据显示面板200的实际显示情况，使其处于开启状态并朝所述显示面板200的显示面板区域210发射光束以提供亮度。\n\n[0086]或者，所述摄像模组400能够在不显示时使所述光源部件140处于关闭状态而不朝向所述显示面板200的所述显示面板区域210发射光束，使对应于所述背光孔120的所述显示面板区域210处于全黑状态，故能使现有技术中处于闲置状态而无法提供任何显示效果的显示面板200得以重新具有显示能力，且依旧维持所述屏下摄像头所能获取的影像质量，提升终端产品(即：采用全面屏技术的显示面板200)的应用场景和使用体验，从而具有竞争力。\n\n[0087]本实施例通过在摄像模组400对应的区域设置一背光孔120及在所述背光孔120内设置一导光环130，使得光源部件140提供的光源能通过导光环130导向所述背光孔120对应的显示面板区域210。使得当所述摄像模组400中摄像头启动时，所述光源142关闭，当所述摄像模组400中的摄像头不启动时，所述光源142开启或关闭，故能够使所述显示面板200上的通孔或盲孔重新具有显示能力，且依旧维持摄像模组400的影像质量。\n\n[0088]实施例二\n\n[0089]本实施例与实施例一相同或相似，不同之处在于：\n\n[0090]在图1～3的基础上，所述出光面132的表面可进一步具有微结构，使自所述出光面132射出的光线可因微结构的设置而尽量均匀的分布在所述背光孔120内侧，从而使对应于所述背光孔120处的所述显示面板区域210具有均匀的亮度。\n\n[0091]请参阅图4～6，所述出光面132所在平面与所述入光面131所在平面垂直或呈一锐角。\n\n[0092]在本实施例中，当所述出光面132所在的平面与所述入光面131所在的平面呈一锐角时，便于光线从所述出光面132折射进入所述背光孔120内时朝向上方，即背光孔120的孔口方向传播。\n\n[0093]在本实施例中，所述背光孔120用于容置摄像模组400、或者所述背光孔120与摄像模组400的镜头位置对应设置。\n\n[0094]在本实施例中，所述显示装置300同样包括与实施例一相同的控制部件(未画出)。所述控制部件可以根据实际情况控制所述光源部件140以及所述摄像模组400。\n\n[0095]当所述摄像模组400中摄像头开启时，所述光源部件140处于非工作状态，所述背光孔120作为所述摄像模组400接收环境光的通道。当所述摄像模组400中摄像头关闭时，所述光源部件140处于工作状态，所述光源部件140中的光源142发出的光线穿过所述导光环130为所述背光孔120提供光。\n\n[0096]在本实施例中，所述导光环130具有对光线全反射和折射的作用，便于光线尽可能地向所述背光孔120的区域传播。本实施例通过在所述背光孔120内侧设置导光环130以及光源部件140，从而在所述背光孔120内侧提供了光源，解决了在摄像头关闭时在所述背光孔120对应位置的颜色较暗的问题。\n\n[0097]本实施例中，所述背光模组100还包括一光线阻隔膜150，所述光线阻隔膜150设于所述导光环130和所述背光单元110之间。设置所述光线阻隔膜150的目的是为了阻隔背光模组100的光线，防止在摄像头进行摄像时受到所述背光模组100的光源部件140所发出的光的影响。\n\n[0098]请参阅图5～6，在所述导光环130靠近所述光线阻隔膜150一侧还包括一反光面133。所述反光面133所在的平面与所述入光面131所在的平面一垂直或呈一锐角。\n\n[0099]在本实施例中，所述光源142的光线(图5、图6中箭头表示光线传播方向)从所述入光面131进入所述导光环130内，经所述反光面133反射使得光线从所述出光面132射出进入所述背光孔120内，从而给所述背光孔120提供光。所述反光面133所在平面与所述入光面131所在平面呈一锐角，更便于所述光源142的光线从所述入光面131进入所述导光环130内后经反射进入所述背光孔120。\n\n[0100]请参阅图4，所述导光环130包括所述入光面131及所述出光面132而不包括所述反光面133，所述出光面132所在平面与所述入光面131所在平面呈一锐角。\n\n[0101]请参阅图5，所述出光面132所在平面与所述入光面131所在平面垂直，所述反光面133所在平面与所述入光面131所在平面呈一锐角。\n\n[0102]请参阅图6，所述出光面132所在平面与所述入光面131所在平面呈一锐角，且所述反光面133所在平面与所述入光面131所在平面也呈一锐角。\n\n[0103]本申请的具体实施例不限于上述几种导光环130结构，只要满足所述光源142发射的光线经所述导光环130传播进入所述背光孔120内，其均属于本申请保护范围。\n\n[0104]在本实施例中，所述导光环130的材质可以是塑料，也可以是光学级的玻璃，其材质优选具有一定折射率，使光线尽可能地向所述背光孔120区域传播。\n\n[0105]请参阅图7，所述入光面131可以由处于同一平面若干菲涅尔透镜160一体形成。即多个所述菲涅尔透镜160呈环形分布于所述入光面131。\n\n[0106]在本实施例中，所述光源142与所述菲涅尔透镜160一一对应设置。所述光源142与所述菲涅尔透镜160的数量相等。\n\n[0107]在本实施例中，所述光源142位于所述菲涅尔透镜160的焦点位置。任一所述光源142发出的光均可经过与之对应的菲涅尔透镜160后形成平行光，具体请参阅图5～6。\n\n[0108]请参阅图7，所述菲涅尔透镜160具有若干个同心布置的环形齿状结构161，以及被所述环形齿状结构161环绕的凸透镜结构。所述菲涅尔透镜160又名螺纹透镜，由聚烯烃材料注压而成的薄片或由玻璃制作。所述菲涅尔透镜160的一面为平面，另一面刻录了由小到大的同心圆，并尽可能多的去掉光学材料以减薄厚度，而保留表面的弯曲度，即形成所述同心布置的环形齿状结构161。\n\n[0109]请参阅图5～6，所述光源142位于所述菲涅尔透镜160焦点位置发出光线，从所述环形齿状结构161一侧入射，经过所述菲涅尔透镜160后以平行光方式射出，因此本实施例的所述菲涅尔透镜160等效于普通菲涅尔透镜160减薄后的效果。\n\n[0110]在本实施例中，所述驱动电路板141的形状及尺寸与所述导光环130的形状及尺寸相适配，即呈环形设置。\n\n[0111]在本实施例中，所述光源142可以呈阵列式分布于所述驱动电路板141上。\n\n[0112]由于所述光源142的光型较发散，为了能更好地实现导光功能以及尽可能利用光效，所述导光环130的入光面131可以包括多个所述菲涅尔透镜160。所述光源142可以位于所述菲涅尔透镜160的焦点位置，以实现所述光源大角度的光线准直作用，避免了发散光造成所述背光模组100的漏光问题。\n\n[0113]请参阅图4，所述导光环130的所述入光面131卡设于所述背板111上，所述光源142与所述背板111的上表面处于同一平面内。这样更利于所述导光环130固定在所述背光孔120内侧。当然，在其他实施例中，所述光源142和所述入光面131也可设置在所述导光环130的其他位置，其变形均属于本申请保护范围。\n\n[0114]本实施例提供的所述显示装置300通过在所述背光孔120内侧设置所述导光环130以及所述光源部件140，解决了所述背光孔120内侧无光源提供亮度的问题，以及解决了所述显示装置300在摄像头关闭进入显示状态时在所述背光孔120对应位置的颜色较暗的技术问题。\n\n[0115]实施例三\n\n[0116]本实施例与实施例二相同或相似，不同之处在于：\n\n[0117]请参阅图8～12，所述出光面132由处于同一平面的若干微透镜薄膜170一体形成。\n\n[0118]在本实施例中，所述微透镜薄膜170呈环形分布于所述出光面132。所述入光面131所在的平面与所述微透镜薄膜170的焦点O所在平面重合。所述入光面131设有多个透光孔171，每一透光孔171与每一微透镜薄膜170相对应设置，这样便于所述光源142发射出的光线经所述入光面131进入并从所述出光面132的所述微透镜薄膜170进行折射射出，从而能够得到最终射出的平行光束。\n\n[0119]在本实施例中，所述光源部件140的设置可以与实施例二相同。所述驱动电路板141可以为柔性电路板，其是以聚酰亚胺或聚酯薄膜为基材制成，具有配线密度高、重量轻、厚度薄的特点。\n\n[0120]在本实施例中，所述透光孔171可以位于所述微透镜薄膜170的焦点O所在的平面。即所述透光孔171处于所述微透镜薄膜170的焦平面，大部分光线经微透镜薄膜170后主光线方向变得有指向性，该方向与所述透光孔171和所述微透镜薄膜170的焦点O的位置有关。\n\n[0121]在本实施例中，当所述透光孔171与所述微透镜薄膜170的焦点O重合时，则所述光源142发射出的光线(图8、图9中用箭头表示)经所述微透镜薄膜170折射形成垂直于所述入光面131的平行光束。当所述透光孔171偏离焦点O且处于所述微透镜薄膜170的焦平面时，所述光源142发出的光线经所述微透镜薄膜170折射形成与入射面成一定角度的平行光束。\n\n[0122]因此，本实施例可以通过调整所述透光孔171相对于所述微透镜薄膜170的焦点O的位置，以控制入射光的出光方向，实现了将所述光源142发出的光导向某一方向。\n\n[0123]请参阅图8，所述背光模组100还包括一金属层反射层172。所述金属层反射层172设于所述导光环130的入光面131朝向所述光源142的一侧。所述金属层反射层172上阵列排布有多个透光孔171。\n\n[0124]在本实施例中，所述入光面131所在的平面与所述微透镜薄膜170的焦点O所在平面重合，从而使所述金属层反射层172所在的平面与所述微透镜薄膜170的焦点O所在的平面重合，即所述透光孔171位于所述微透镜薄膜170的焦点O所在平面内。\n\n[0125]在本实施例中，设置所述透光孔171使得其透过所述光源142发射出的光线可近似当作点光源。\n\n[0126]请参阅图8，所述光源部件140还包括一漫反射层143。所述漫反射层143设于所述驱动电路板141上，所述光源142暴露在所述漫反射层143上。\n\n[0127]在本实施例中，所述漫反射层143用于反射未通过所述透光孔171的光线，同时所述漫反射层143与所述金属层反射层172相平行设置。未通过所述透光孔171的光线经所述金属层反射层172反射再经所述漫反射层143漫反射，这样在所述金属层反射层172和所述漫反射层143之间充满了方向随机的光线，从而达到多次利用所述光源142发射的光线。本申请重复利用多次反射的光线，减小了光效损失，达到了节能效果。\n\n[0128]在本实施例中，所述漫反射层143的材质可以包括白色油墨，其反光效果良好且不易吸收光线。\n\n[0129]在本实施例中，每一透光孔171均位于与其对应的每一微透镜薄膜170的焦点O远离所述导光环130中心的一侧。相邻两个所述透光孔171的中心与相邻两个所述微透镜薄膜170的焦点O的间距相等。这样所述透光孔171均偏离所述微透镜薄膜170的焦点O，则所述光源142发射出的光线经所述微透镜薄膜170折射形成与入射面成一定角度的平行光束，且该平行光束均被导向所述导光环130中心的一侧。\n\n[0130]请参阅图10～11，所述光源142呈阵列式排布于所述驱动电路板141上。所述光源142的一侧为发光侧。所述光源142呈阵列式排布的方式有多种形式。\n\n[0131]请参阅图10，所述光源142的排布方向一致。\n\n[0132]请参阅图图11，所述光源142的排布方向的交点为所述驱动电路板141的中心点。\n\n[0133]在本实施例中，所述透光孔171位于所述微透镜薄膜170的焦点O所在平面内，透光孔171并未与焦点O重合且远离所述背光孔120的一侧。这样所述光源142发射出的光线经所述透光孔171进入所述微透镜薄膜170内进行折射射出，从而能够形成朝向所述背光孔120的平行光束。\n\n[0134]本实施例中，所述背光模组100的形状及尺寸与所述背光孔120的形状及尺寸相适配。所述背光孔120优选为圆形孔。\n\n[0135]本实施例中，所述导光环130、所述光源142均呈环形，优选为圆环形，即与所述背光孔120优选为圆形孔时相适配。\n\n[0136]请参阅图12所示，所述背光模组100还包括一光线阻隔膜150，所述光线阻隔膜150设于所述背光模组100和所述背光单元110之间。设置所述光线阻隔膜150的目的是为了阻隔所述背光模组100的光线，防止在摄像头进行摄像时受到所述背光模组100的光源142的影响。\n\n[0137]本实施例提供的所述显示装置300通过在所述背光孔120内侧设置所述导光环130以及所述光源142，解决了所述背光孔120内侧无光源提供亮度的问题，以及解决了所述显示装置300在摄像头关闭进行显示状态时在所述背光孔120对应位置的亮度偏暗的技术问题。\n\n[0138]在上述实施例中，所述显示装置300还可以包括位于所述背光模组100与所述显示面板200之间的遮光胶180。\n\n[0139]本申请以实施例二为例进行说明，请参阅图13。\n\n[0140]所述遮光胶180的下表面部分贴附于所述导光环130的上表面，另一部分贴附于所述上增光片116的上表面(即所述背光模组100的上表面)。\n\n[0141]所述遮光胶180的上表面则贴附于所述显示面板200的下表面，从而所述遮光胶180将所述背光模组100和所述显示面板200粘附结合在一起。所述遮光胶180起到连接所述背光模组100和所述显示面板200的作用，并且可以防止从所述背光孔120位置漏光，因此所述遮光胶180的形状及尺寸与所述背光孔120的形状及尺寸相适配，即所述遮光胶180呈环形环绕所述背光孔120，也就是说在对应所述背光孔120的位置不设置所述遮光胶180。\n\n[0142]在上述实施例中，所述背光单元110可以包括从下至上依次层叠设置的反射片112、导光板113、扩散片114、下增光片115和上增光片116。\n\n[0143]所述反射片112设于所述背板111上；所述导光板113设于所述反射片112上；所述扩散片114设于所述导光板113上；所述下增光片115设于所述扩散片114上；所述上增光片116设于所述下增光片115上。\n\n[0144]所述背光孔120从下至上依次贯穿所述背板111、所述反射片112、所述导光板113、所述扩散片114、所述下增光片115和所述上增光片116。\n\n[0145]所述扩散片114对光线扩散以提供一个均匀的面光源。所述下增光片115和所述上增光片116可增强光源的亮度。所述背光单元110的发光效果将直接影响到所述背光模组100的视觉效果。\n\n[0146]在上述实施例中，所述显示面板200包括下偏光片201、阵列基板202、彩膜基板203和上偏光片204，具体请参阅图13。\n\n[0147]在本实施例中，所述下偏光片201，设于所述背光模组100上；所述阵列基板202设于所述下偏光片201上；所述彩膜基板203设于所述阵列基板202上；所述上偏光片204设于所述彩膜基板203上；其中所述下偏光片201和所述上偏光片204在对应所述背光孔120位置设有通孔，所述通孔能够提高所述显示面板200的透光率。所述遮光胶180的上表面贴附于所述下偏光片201的下表面将所述背光模组100和所述显示面板200粘附结合在一起。\n\n[0148]所述显示装置300可装设于具有通孔(如：挖孔、水滴、凹口、及面外等)或具有盲孔的所述显示面板200，从而消弭当所述显示面板200具有通孔或盲孔时，所述通孔区域或所述盲孔区域无法用于显示的问题，且所述背光单元110可使用背板111或反射膜作为背面，以均匀或有效利用所述背光单元110所发射的光。\n\n[0149]综上所述，藉由本揭示的所述导光环130与所述光源部件140的设置，使得所述显示装置300所具有的所述背光模组100可于所述背光孔120的区域提供光线与亮度控制，使现有技术中处于闲置状态而无法提供任何显示效果的显示面板200上的通孔或盲孔得以重新具有显示能力，且依旧维持所述摄像模组400所能获取的影像质量，进而提升终端产品的应用场景和使用体验，从而具有竞争力。\n\n[0150]本实施例中的所述显示装置可以为手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。\n\n[0151]本申请提出了一种显示装置，包括显示面板及背光模组。该背光模组包括背光单元，开设有背光孔；导光环，设于该背光孔内侧，该导光环包括入光面和出光面，该导光环用于将进入该导光环中的光束导向该背光孔对应的显示面板区域；光源部件，用于为该导光环提供光源。本申请通过在摄像模组对应的区域设置一背光孔及在所述背光孔内设置一导光环，使得光源部件提供的光源能通过导光环导向所述背光孔对应的显示面板区域。使得当所述摄像模组中摄像头启动时，所述光源关闭，当所述摄像模组中的摄像头不启动时，所述光源开启或关闭，故能够使所述显示面板上的通孔或盲孔重新具有显示能力，且依旧维持摄像模组的影像质量。\n\n[0152]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本申请涉及显示领域，特别涉及一种显示装置。\n\n背景技术\n\n[0002]随着液晶显示技术的发展，特别是全面屏技术的发展，目前多数厂商乃是将显示装置的背光模组设置面朝内的开孔，以供屏下摄像头对应放置，并藉此接收来自外界环境的入射光。\n\n[0003]现有技术的显示装置中，当屏下摄像头对应地设置于所述显示装置所具有的背光模组的开孔下方时，所述开孔将仅仅作为所述屏下摄像头用以接收环境光的收发通道。由于所述开孔的内侧并未设置有任何光源提供亮度，使得所述显示装置在使用时，所述背光模组于所述开孔的区域将处于闲置状态而无法提供任何显示效果。\n\n[0004]因此，亟需一种显示装置以解决上述技术问题。\n\n实用新型内容\n\n[0005]本申请提供了一种显示模组，以解决现有显示装置中屏下摄像头区域无法进行显示的技术问题。\n\n[0006]为解决上述问题，本申请提供的技术方案如下：\n\n[0007]本申请提出了一种显示装置，其包括显示面板、位于所述显示面板一侧的背光模组，所述背光模组包括：\n\n[0008]背光单元，开设有背光孔；\n\n[0009]导光环，设于所述背光孔内侧，所述导光环包括远离所述显示面板设置的入光面和靠近所述显示面板设置的出光面，所述导光环用于将进入所述导光环中的光束导向所述背光孔对应的显示面板区域；\n\n[0010]光源部件，用于为所述导光环提供光源。\n\n[0011]在本申请的显示装置中，\n\n[0012]所述光源部件包括驱动电路板及位于所述驱动电路板上的至少一光源，所述光源呈阵列式排布于所述驱动电路板上，所述光源围绕所述背光孔的内侧或外侧分布；\n\n[0013]所述光源一侧朝向所述导光环的入光面。\n\n[0014]在本申请的显示装置中，\n\n[0015]所述出光面所在平面与所述入光面所在平面垂直或呈锐角。\n\n[0016]在本申请的显示装置中，所述导光环还包括一反光面，所述反光面所在平面与所述入光面所在平面垂直或呈一锐角。\n\n[0017]在本申请的显示装置中，\n\n[0018]所述入光面由处于同一平面的至少一菲涅尔透镜一体形成。\n\n[0019]在本申请的显示装置中，\n\n[0020]所述菲涅尔透镜具有至少一个同心布置的环形齿状结构，以及被所述环形齿状结构环绕的凸透镜结构。\n\n[0021]在本申请的显示装置中，\n\n[0022]所述出光面由处于同一平面的至少一微透镜薄膜一体形成；\n\n[0023]所述入光面所在的平面与所述微透镜薄膜的焦点所在平面重合；\n\n[0024]所述入光面设有至少一透光孔，每一透光孔与每一所述微透镜薄膜对应设置。\n\n[0025]在本申请的显示装置中，当所述透光孔与所述微透镜薄膜的焦点重合时，所述光源发出的光线经所述微透镜薄膜折射形成垂直于所述入光面的平行光束；\n\n[0026]当所述透光孔偏离焦点且处于所述微透镜薄膜的焦平面时，所述光源发出的光线经所述微透镜薄膜折射形成与入射面成一定角度的平行光束。\n\n[0027]在本申请的显示装置中，所述导光组件还包括一金属反射层，所述金属反射层设于所述导光环的入光面朝向所述光源一侧；所述透光孔阵列式地排布在所述金属反射层上。\n\n[0028]在本申请的显示装置中，\n\n[0029]所述光源部件还包括一漫反射层，所述漫反射层设于所述驱动电路板上，所述光源暴露在所述漫反射层上。\n\n[0030]在本申请的显示装置中，每一透光孔位于与其对应的每一微透镜薄膜的焦点远离所述导光环中心的一侧。\n\n[0031]在本申请的显示装置中，\n\n[0032]所述光源包括LED光源或mini LED光源中的一种。\n\n[0033]在本申请的显示装置中，所述显示装置还包括位于所述显示模组远离所述显示面板一侧的摄像模组，所述摄像模组与所述背光孔对应；\n\n[0034]与所述摄像模组及所述光源部件电连接的控制部件；\n\n[0035]其中，当所述摄像模组中的摄像头开启时，所述控制部件控制所述光源关闭；\n\n[0036]当所述摄像模组中的摄像头关闭时，所述控制部件控制所述光源开启或关闭。\n\n[0037]在本申请的显示装置中，所述背光模组还包括一光线阻隔膜，所述光线阻隔膜设于所述导光环和所述背光单元之间。\n\n[0038]在本申请的显示装置中，\n\n[0039]所述导光环为透明材质或雾面材质制备。\n\n[0040]在本申请的显示装置中，所述背光单元包括位于背板上的反射片、位于所述反射片上的导光板、位于所述导光板上的扩散片、位于所述扩散片上的下增光片、及位于所述下增光片上的上增光片；\n\n[0041]其中，所述背光孔从下至上依次贯穿所述背板、所述反射片、所述导光板、所述扩散片、所述下增光片和所述上增光片。\n\n[0042]在本申请的显示装置中，所述显示面板包括：\n\n[0043]下偏光片，设于所述背光模组上；\n\n[0044]阵列基板，设于所述下偏光片上；\n\n[0045]彩膜基板，设于所述阵列基板上；以及\n\n[0046]上偏光片，设于所述彩膜基板上；\n\n[0047]其中，所述下偏光片和所述上偏光片在对应所述背光孔位置设有通孔。\n\n[0048]有益效果：本申请通过在摄像模组对应的区域设置一背光孔及在所述背光孔内设置一导光环，使得光源部件提供的光源能通过导光环导向所述背光孔对应的显示面板区域。使得当所述摄像模组中摄像头启动时，所述光源关闭，当所述摄像模组中的摄像头不启动时，所述光源开启或关闭，故能够使所述显示面板上的通孔或盲孔重新具有显示能力，且依旧维持摄像模组的影像质量。\n\n附图说明\n\n[0049]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是实用新型的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0050]图1为本申请显示装置的第一种结构图；\n\n[0051]图2为本申请显示装置的第二种结构图；\n\n[0052]图3为本申请显示装置的第三种结构图；\n\n[0053]图4为本申请显示装置中背光模组的第一种结构示意图；\n\n[0054]图5为本申请显示装置中光源部件的第一种结构示意图；\n\n[0055]图6为本申请显示装置中导光环及光源的结构示意图；\n\n[0056]图7为本申请显示装置中导光环的第一种仰视图；\n\n[0057]图8为本申请显示装置中背光模组的第二种结构示意图；\n\n[0058]图9为本申请显示装置中微透镜薄膜的光路原理示意图；\n\n[0059]图10为本申请显示装置中光源部件的第一种结构示意图；\n\n[0060]图11为本申请显示装置中光源部件的第二种结构示意图；\n\n[0061]图12为本申请显示装置中背光模组的第二种结构示意图；\n\n[0062]图13为本申请显示装置的第四种结构图。\n\n具体实施方式\n\n[0063]以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。\n\n[0064]在现有技术的显示装置中，当屏下摄像头对应地设置于所述显示装置所具有的背光模组的开孔下方时，所述开孔将仅仅作为所述屏下摄像头用以接收环境光的收发通道。由于所述开孔的内侧并未设置有任何光源提供亮度，使得所述显示装置在使用时，所述背光模组于所述开孔的区域将处于闲置状态而无法提供任何显示效果。本申请基于上述技术问题提出了一种显示装置。\n\n[0065]请参阅图1，所述显示装置300包括显示面板200、位于所述显示面板200一侧的背光模组100所述背光模组100包括：\n\n[0066]背光单元110，开设有背光孔120。在本实施例中，所述背光孔120可以为圆形孔。\n\n[0067]导光环130，设于所述背光孔120内侧，所述导光环130包括远离所述显示面板200设置的入光面131和靠近所述显示面板200设置的出光面132，所述导光环130用于将进入所述导光环130中的光束导向所述背光孔120对应的显示面板区域210。所述导光环130的形状及尺寸与所述背光孔120的形状及尺寸相适配。\n\n[0068]光源部件140，用于为所述导光环130提供光源。所述光源部件140的形状及尺寸与所述导光环130的形状及尺寸相适配。\n\n[0069]在本实施例中，所述光源部件140包括驱动电路板141及位于所述驱动电路板141上的至少一光源142，所述光源142呈阵列式排布于所述驱动电路板141上，所述光源围绕所述背光孔的内侧或外侧分布。所述光源142一侧朝向所述导光环130的入光面131。\n\n[0070]在本实施例中，所述显示装置300还可以包括位于所述背光模组100一侧且远离所述显示面板200的摄像模组400，所述摄像模组400与所述背光孔120对应。所述摄像模组400在所述背光单元110上的正投影位于所述背光孔120内。\n\n[0071]在本实施例中，所述显示装置300是否设置有所述摄像模组400，本申请不作具体限制。\n\n[0072]本申请提出了一种显示装置300，包括显示面板200、背光模组100及摄像模组400。所述背光模组100包括背光单元110，开设有背光孔120，所述摄像模组400与所述背光孔120对应；导光环130，设于所述背光孔120内侧，所述导光环130包括入光面131和出光面132，所述导光环130用于将进入所述导光环130中的光束导向所述背光孔120对应的显示面板区域210；光源部件140，用于为所述导光环130提供光源。本申请通过在摄像模组400对应的区域设置一背光孔120及在所述背光孔120内设置一导光环130，使得光源部件140提供的光源能通过导光环130导向所述背光孔120对应的显示面板区域210。使得当所述摄像模组400中摄像头启动时，所述光源142关闭，当所述摄像模组400中的摄像头不启动时，所述光源142开启或关闭，故能够使所述显示面板200上的通孔或盲孔重新具有显示能力，且依旧维持摄像模组400的影像质量。\n\n[0073]下面结合具体实施例对本申请的技术方案进行说明。\n\n[0074]实施例一\n\n[0075]请参阅图1～3，所述出光面132所在平面与所述入光面131所在平面呈锐角。\n\n[0076]请参阅图1，所述出光面132与所述入光面131的夹角为锐角。在实际应用中，所述出光面132与所述入光面131之间的夹角可以为10度、20度、30度、45度、50度、60度、70度、80度等，用来保障从所述入光面131进入的光束。\n\n[0077]在从所述出光面132射出时，向所述背光孔120对应的所述显示面板区域210投射，以补偿所述摄像模组400对应的所述显示面板区域210额外光源，使得显示面板200的这部分区域能够正常显示，且不影响所述摄像模组400的正常工作。\n\n[0078]在本实施例中，所述背光模组100还包括一光线阻隔膜150。所述光线阻隔膜150设于所述导光环130和所述背光单元110之间。所述光线阻隔膜150用于阻隔背光模组100的光线，以及防止在摄像模组400进行摄像时受到所述背光模组100的光源142所发出的光的影响。\n\n[0079]在图1的基础上，所述显示装置300所具有的所述导光环130更进一步依据不同的背光单元110的设计，相应的变化为如图2或图3所示例的剖面结构，以同样可透过所述导光环130的所述出光面132的设置，引导所述光源部件140所发射的光束朝对应于所述背光孔120处的所述显示面板区域210发射，藉此为对应于所述背光孔120处的所述显示面板区域210提供适当的亮度。\n\n[0080]在本实施例中，当所述导光环130设置为图3或图4所具有的剖面结构时，所述导光环130与所述背光单元110的交界处所设置的所述光线阻隔膜150亦将相应地变更其形状，以有效阻隔所述背光单元110内部的光线漏出至所述背光孔120的中心区域，从而避免影响到所述摄像模组400的摄像质量。\n\n[0081]在本实施例中，所述光源142可以包括LED光源或mini LED光源中的一种。下述实施例中的光源部件140可以与本实施例相同。\n\n[0082]在本实施例中，所述导光环130可以为透明材质或雾面材质制备。透明的导光环130可以有效地引导光源部件140所射出的光束通过所述出光面132朝向对应于所述背光孔120处的所述显示面板区域210发射，降低光源部件140的光损现象。下述实施例中的导光环130材料可以与本实施例相同。\n\n[0083]请参阅图1，所述显示装置300还包括控制部件160。\n\n[0084]所述控制部件160分别与所述摄像模组400和所述光源部件140电连接。所述控制部件160用于当所述摄像模组400启动时，使所述光源部件140关闭，使所述摄像模组400可不受干扰地获取外界影像数据。当所述摄像模组400关闭时，则可依据显示面板200的实际显示情况控制所述光源部件140开启或关闭。\n\n[0085]在本实施例中，当所述摄像模组400启动时，所述光源部件140将关闭，以使得所述摄像模组400可不受影响地接收来来自外界的环境光源进行感光。当所述摄像模组400不启动时，所述光源部件140则能够依据显示面板200的实际显示情况，使其处于开启状态并朝所述显示面板200的显示面板区域210发射光束以提供亮度。\n\n[0086]或者，所述摄像模组400能够在不显示时使所述光源部件140处于关闭状态而不朝向所述显示面板200的所述显示面板区域210发射光束，使对应于所述背光孔120的所述显示面板区域210处于全黑状态，故能使现有技术中处于闲置状态而无法提供任何显示效果的显示面板200得以重新具有显示能力，且依旧维持所述屏下摄像头所能获取的影像质量，提升终端产品(即：采用全面屏技术的显示面板200)的应用场景和使用体验，从而具有竞争力。\n\n[0087]本实施例通过在摄像模组400对应的区域设置一背光孔120及在所述背光孔120内设置一导光环130，使得光源部件140提供的光源能通过导光环130导向所述背光孔120对应的显示面板区域210。使得当所述摄像模组400中摄像头启动时，所述光源142关闭，当所述摄像模组400中的摄像头不启动时，所述光源142开启或关闭，故能够使所述显示面板200上的通孔或盲孔重新具有显示能力，且依旧维持摄像模组400的影像质量。\n\n[0088]实施例二\n\n[0089]本实施例与实施例一相同或相似，不同之处在于：\n\n[0090]在图1～3的基础上，所述出光面132的表面可进一步具有微结构，使自所述出光面132射出的光线可因微结构的设置而尽量均匀的分布在所述背光孔120内侧，从而使对应于所述背光孔120处的所述显示面板区域210具有均匀的亮度。\n\n[0091]请参阅图4～6，所述出光面132所在平面与所述入光面131所在平面垂直或呈一锐角。\n\n[0092]在本实施例中，当所述出光面132所在的平面与所述入光面131所在的平面呈一锐角时，便于光线从所述出光面132折射进入所述背光孔120内时朝向上方，即背光孔120的孔口方向传播。\n\n[0093]在本实施例中，所述背光孔120用于容置摄像模组400、或者所述背光孔120与摄像模组400的镜头位置对应设置。\n\n[0094]在本实施例中，所述显示装置300同样包括与实施例一相同的控制部件(未画出)。所述控制部件可以根据实际情况控制所述光源部件140以及所述摄像模组400。\n\n[0095]当所述摄像模组400中摄像头开启时，所述光源部件140处于非工作状态，所述背光孔120作为所述摄像模组400接收环境光的通道。当所述摄像模组400中摄像头关闭时，所述光源部件140处于工作状态，所述光源部件140中的光源142发出的光线穿过所述导光环130为所述背光孔120提供光。\n\n[0096]在本实施例中，所述导光环130具有对光线全反射和折射的作用，便于光线尽可能地向所述背光孔120的区域传播。本实施例通过在所述背光孔120内侧设置导光环130以及光源部件140，从而在所述背光孔120内侧提供了光源，解决了在摄像头关闭时在所述背光孔120对应位置的颜色较暗的问题。\n\n[0097]本实施例中，所述背光模组100还包括一光线阻隔膜150，所述光线阻隔膜150设于所述导光环130和所述背光单元110之间。设置所述光线阻隔膜150的目的是为了阻隔背光模组100的光线，防止在摄像头进行摄像时受到所述背光模组100的光源部件140所发出的光的影响。\n\n[0098]请参阅图5～6，在所述导光环130靠近所述光线阻隔膜150一侧还包括一反光面133。所述反光面133所在的平面与所述入光面131所在的平面一垂直或呈一锐角。\n\n[0099]在本实施例中，所述光源142的光线(图5、图6中箭头表示光线传播方向)从所述入光面131进入所述导光环130内，经所述反光面133反射使得光线从所述出光面132射出进入所述背光孔120内，从而给所述背光孔120提供光。所述反光面133所在平面与所述入光面131所在平面呈一锐角，更便于所述光源142的光线从所述入光面131进入所述导光环130内后经反射进入所述背光孔120。\n\n[0100]请参阅图4，所述导光环130包括所述入光面131及所述出光面132而不包括所述反光面133，所述出光面132所在平面与所述入光面131所在平面呈一锐角。\n\n[0101]请参阅图5，所述出光面132所在平面与所述入光面131所在平面垂直，所述反光面133所在平面与所述入光面131所在平面呈一锐角。\n\n[0102]请参阅图6，所述出光面132所在平面与所述入光面131所在平面呈一锐角，且所述反光面133所在平面与所述入光面131所在平面也呈一锐角。\n\n[0103]本申请的具体实施例不限于上述几种导光环130结构，只要满足所述光源142发射的光线经所述导光环130传播进入所述背光孔120内，其均属于本申请保护范围。\n\n[0104]在本实施例中，所述导光环130的材质可以是塑料，也可以是光学级的玻璃，其材质优选具有一定折射率，使光线尽可能地向所述背光孔120区域传播。\n\n[0105]请参阅图7，所述入光面131可以由处于同一平面若干菲涅尔透镜160一体形成。即多个所述菲涅尔透镜160呈环形分布于所述入光面131。\n\n[0106]在本实施例中，所述光源142与所述菲涅尔透镜160一一对应设置。所述光源142与所述菲涅尔透镜160的数量相等。\n\n[0107]在本实施例中，所述光源142位于所述菲涅尔透镜160的焦点位置。任一所述光源142发出的光均可经过与之对应的菲涅尔透镜160后形成平行光，具体请参阅图5～6。\n\n[0108]请参阅图7，所述菲涅尔透镜160具有若干个同心布置的环形齿状结构161，以及被所述环形齿状结构161环绕的凸透镜结构。所述菲涅尔透镜160又名螺纹透镜，由聚烯烃材料注压而成的薄片或由玻璃制作。所述菲涅尔透镜160的一面为平面，另一面刻录了由小到大的同心圆，并尽可能多的去掉光学材料以减薄厚度，而保留表面的弯曲度，即形成所述同心布置的环形齿状结构161。\n\n[0109]请参阅图5～6，所述光源142位于所述菲涅尔透镜160焦点位置发出光线，从所述环形齿状结构161一侧入射，经过所述菲涅尔透镜160后以平行光方式射出，因此本实施例的所述菲涅尔透镜160等效于普通菲涅尔透镜160减薄后的效果。\n\n[0110]在本实施例中，所述驱动电路板141的形状及尺寸与所述导光环130的形状及尺寸相适配，即呈环形设置。\n\n[0111]在本实施例中，所述光源142可以呈阵列式分布于所述驱动电路板141上。\n\n[0112]由于所述光源142的光型较发散，为了能更好地实现导光功能以及尽可能利用光效，所述导光环130的入光面131可以包括多个所述菲涅尔透镜160。所述光源142可以位于所述菲涅尔透镜160的焦点位置，以实现所述光源大角度的光线准直作用，避免了发散光造成所述背光模组100的漏光问题。\n\n[0113]请参阅图4，所述导光环130的所述入光面131卡设于所述背板111上，所述光源142与所述背板111的上表面处于同一平面内。这样更利于所述导光环130固定在所述背光孔120内侧。当然，在其他实施例中，所述光源142和所述入光面131也可设置在所述导光环130的其他位置，其变形均属于本申请保护范围。\n\n[0114]本实施例提供的所述显示装置300通过在所述背光孔120内侧设置所述导光环130以及所述光源部件140，解决了所述背光孔120内侧无光源提供亮度的问题，以及解决了所述显示装置300在摄像头关闭进入显示状态时在所述背光孔120对应位置的颜色较暗的技术问题。\n\n[0115]实施例三\n\n[0116]本实施例与实施例二相同或相似，不同之处在于：\n\n[0117]请参阅图8～12，所述出光面132由处于同一平面的若干微透镜薄膜170一体形成。\n\n[0118]在本实施例中，所述微透镜薄膜170呈环形分布于所述出光面132。所述入光面131所在的平面与所述微透镜薄膜170的焦点O所在平面重合。所述入光面131设有多个透光孔171，每一透光孔171与每一微透镜薄膜170相对应设置，这样便于所述光源142发射出的光线经所述入光面131进入并从所述出光面132的所述微透镜薄膜170进行折射射出，从而能够得到最终射出的平行光束。\n\n[0119]在本实施例中，所述光源部件140的设置可以与实施例二相同。所述驱动电路板141可以为柔性电路板，其是以聚酰亚胺或聚酯薄膜为基材制成，具有配线密度高、重量轻、厚度薄的特点。\n\n[0120]在本实施例中，所述透光孔171可以位于所述微透镜薄膜170的焦点O所在的平面。即所述透光孔171处于所述微透镜薄膜170的焦平面，大部分光线经微透镜薄膜170后主光线方向变得有指向性，该方向与所述透光孔171和所述微透镜薄膜170的焦点O的位置有关。\n\n[0121]在本实施例中，当所述透光孔171与所述微透镜薄膜170的焦点O重合时，则所述光源142发射出的光线(图8、图9中用箭头表示)经所述微透镜薄膜170折射形成垂直于所述入光面131的平行光束。当所述透光孔171偏离焦点O且处于所述微透镜薄膜170的焦平面时，所述光源142发出的光线经所述微透镜薄膜170折射形成与入射面成一定角度的平行光束。\n\n[0122]因此，本实施例可以通过调整所述透光孔171相对于所述微透镜薄膜170的焦点O的位置，以控制入射光的出光方向，实现了将所述光源142发出的光导向某一方向。\n\n[0123]请参阅图8，所述背光模组100还包括一金属层反射层172。所述金属层反射层172设于所述导光环130的入光面131朝向所述光源142的一侧。所述金属层反射层172上阵列排布有多个透光孔171。\n\n[0124]在本实施例中，所述入光面131所在的平面与所述微透镜薄膜170的焦点O所在平面重合，从而使所述金属层反射层172所在的平面与所述微透镜薄膜170的焦点O所在的平面重合，即所述透光孔171位于所述微透镜薄膜170的焦点O所在平面内。\n\n[0125]在本实施例中，设置所述透光孔171使得其透过所述光源142发射出的光线可近似当作点光源。\n\n[0126]请参阅图8，所述光源部件140还包括一漫反射层143。所述漫反射层143设于所述驱动电路板141上，所述光源142暴露在所述漫反射层143上。\n\n[0127]在本实施例中，所述漫反射层143用于反射未通过所述透光孔171的光线，同时所述漫反射层143与所述金属层反射层172相平行设置。未通过所述透光孔171的光线经所述金属层反射层172反射再经所述漫反射层143漫反射，这样在所述金属层反射层172和所述漫反射层143之间充满了方向随机的光线，从而达到多次利用所述光源142发射的光线。本申请重复利用多次反射的光线，减小了光效损失，达到了节能效果。\n\n[0128]在本实施例中，所述漫反射层143的材质可以包括白色油墨，其反光效果良好且不易吸收光线。\n\n[0129]在本实施例中，每一透光孔171均位于与其对应的每一微透镜薄膜170的焦点O远离所述导光环130中心的一侧。相邻两个所述透光孔171的中心与相邻两个所述微透镜薄膜170的焦点O的间距相等。这样所述透光孔171均偏离所述微透镜薄膜170的焦点O，则所述光源142发射出的光线经所述微透镜薄膜170折射形成与入射面成一定角度的平行光束，且该平行光束均被导向所述导光环130中心的一侧。\n\n[0130]请参阅图10～11，所述光源142呈阵列式排布于所述驱动电路板141上。所述光源142的一侧为发光侧。所述光源142呈阵列式排布的方式有多种形式。\n\n[0131]请参阅图10，所述光源142的排布方向一致。\n\n[0132]请参阅图图11，所述光源142的排布方向的交点为所述驱动电路板141的中心点。\n\n[0133]在本实施例中，所述透光孔171位于所述微透镜薄膜170的焦点O所在平面内，透光孔171并未与焦点O重合且远离所述背光孔120的一侧。这样所述光源142发射出的光线经所述透光孔171进入所述微透镜薄膜170内进行折射射出，从而能够形成朝向所述背光孔120的平行光束。\n\n[0134]本实施例中，所述背光模组100的形状及尺寸与所述背光孔120的形状及尺寸相适配。所述背光孔120优选为圆形孔。\n\n[0135]本实施例中，所述导光环130、所述光源142均呈环形，优选为圆环形，即与所述背光孔120优选为圆形孔时相适配。\n\n[0136]请参阅图12所示，所述背光模组100还包括一光线阻隔膜150，所述光线阻隔膜150设于所述背光模组100和所述背光单元110之间。设置所述光线阻隔膜150的目的是为了阻隔所述背光模组100的光线，防止在摄像头进行摄像时受到所述背光模组100的光源142的影响。\n\n[0137]本实施例提供的所述显示装置300通过在所述背光孔120内侧设置所述导光环130以及所述光源142，解决了所述背光孔120内侧无光源提供亮度的问题，以及解决了所述显示装置300在摄像头关闭进行显示状态时在所述背光孔120对应位置的亮度偏暗的技术问题。\n\n[0138]在上述实施例中，所述显示装置300还可以包括位于所述背光模组100与所述显示面板200之间的遮光胶180。\n\n[0139]本申请以实施例二为例进行说明，请参阅图13。\n\n[0140]所述遮光胶180的下表面部分贴附于所述导光环130的上表面，另一部分贴附于所述上增光片116的上表面(即所述背光模组100的上表面)。\n\n[0141]所述遮光胶180的上表面则贴附于所述显示面板200的下表面，从而所述遮光胶180将所述背光模组100和所述显示面板200粘附结合在一起。所述遮光胶180起到连接所述背光模组100和所述显示面板200的作用，并且可以防止从所述背光孔120位置漏光，因此所述遮光胶180的形状及尺寸与所述背光孔120的形状及尺寸相适配，即所述遮光胶180呈环形环绕所述背光孔120，也就是说在对应所述背光孔120的位置不设置所述遮光胶180。\n\n[0142]在上述实施例中，所述背光单元110可以包括从下至上依次层叠设置的反射片112、导光板113、扩散片114、下增光片115和上增光片116。\n\n[0143]所述反射片112设于所述背板111上；所述导光板113设于所述反射片112上；所述扩散片114设于所述导光板113上；所述下增光片115设于所述扩散片114上；所述上增光片116设于所述下增光片115上。\n\n[0144]所述背光孔120从下至上依次贯穿所述背板111、所述反射片112、所述导光板113、所述扩散片114、所述下增光片115和所述上增光片116。\n\n[0145]所述扩散片114对光线扩散以提供一个均匀的面光源。所述下增光片115和所述上增光片116可增强光源的亮度。所述背光单元110的发光效果将直接影响到所述背光模组100的视觉效果。\n\n[0146]在上述实施例中，所述显示面板200包括下偏光片201、阵列基板202、彩膜基板203和上偏光片204，具体请参阅图13。\n\n[0147]在本实施例中，所述下偏光片201，设于所述背光模组100上；所述阵列基板202设于所述下偏光片201上；所述彩膜基板203设于所述阵列基板202上；所述上偏光片204设于所述彩膜基板203上；其中所述下偏光片201和所述上偏光片204在对应所述背光孔120位置设有通孔，所述通孔能够提高所述显示面板200的透光率。所述遮光胶180的上表面贴附于所述下偏光片201的下表面将所述背光模组100和所述显示面板200粘附结合在一起。\n\n[0148]所述显示装置300可装设于具有通孔(如：挖孔、水滴、凹口、及面外等)或具有盲孔的所述显示面板200，从而消弭当所述显示面板200具有通孔或盲孔时，所述通孔区域或所述盲孔区域无法用于显示的问题，且所述背光单元110可使用背板111或反射膜作为背面，以均匀或有效利用所述背光单元110所发射的光。\n\n[0149]综上所述，藉由本揭示的所述导光环130与所述光源部件140的设置，使得所述显示装置300所具有的所述背光模组100可于所述背光孔120的区域提供光线与亮度控制，使现有技术中处于闲置状态而无法提供任何显示效果的显示面板200上的通孔或盲孔得以重新具有显示能力，且依旧维持所述摄像模组400所能获取的影像质量，进而提升终端产品的应用场景和使用体验，从而具有竞争力。\n\n[0150]本实施例中的所述显示装置可以为手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。\n\n[0151]本申请提出了一种显示装置，包括显示面板及背光模组。该背光模组包括背光单元，开设有背光孔；导光环，设于该背光孔内侧，该导光环包括入光面和出光面，该导光环用于将进入该导光环中的光束导向该背光孔对应的显示面板区域；光源部件，用于为该导光环提供光源。本申请通过在摄像模组对应的区域设置一背光孔及在所述背光孔内设置一导光环，使得光源部件提供的光源能通过导光环导向所述背光孔对应的显示面板区域。使得当所述摄像模组中摄像头启动时，所述光源关闭，当所述摄像模组中的摄像头不启动时，所述光源开启或关闭，故能够使所述显示面板上的通孔或盲孔重新具有显示能力，且依旧维持摄像模组的影像质量。\n\n[0152]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (11006, 24060, '技术领域\n\n[0001]本实用新型涉及显示技术领域，尤其涉及一种显示面板及显示装置。\n\n背景技术\n\n[0002]随着移动便携设备的普及化程度越来越高，高屏占比屏幕由于能给予用户更好视觉体验而成为手机、平板等电子设备的未来发展趋势。屏占比用于表示屏幕和手机前面板面积的相对比值，其反映了用户对于移动设备的视觉体验，如何实现100％的屏占比的显示效果是目前行业亟待解决的难题。\n\n[0003]但是对于手机等便携设备而言，除了显示屏幕以外，还需在前面板顶部位置放置一些电子元件如摄像头、闪光灯、光线传感器等，这些器件需要从面板正面采光，由于传统屏幕会对上述电子元件进行遮挡，目前行业内的普遍做法是将前面板做异形切割，裁剪掉部分屏幕以实现透光，以此保证电子元件的正常工作。上述做法在破坏整块屏幕的完整性的同时，也始终无法做到100％屏占比的全面显示。\n\n[0004]另一种全面屏的解决方案是将电子元件如前置摄像头做到单独的机械模块上作为独立控制的部件，默认隐藏在机身内部，当用户有拍照、拍视频等需求的时候，摄像头会响应系统的指令自动弹出或手动滑出，即所谓“弹出式”或“滑盖式”设计。然而，受限于机械结构的因素，其摄像头弹出时间缓慢，其开启速度落后于传统意义的摄像头；其次由于机械结构受到装配工艺的影响，使得弹出功能模块与显示面板本体之间存在间隙，易受到外界粉末灰尘侵入，不能做到良好的防水防尘；再者弹出式设计其机械结构存在较高的故障率，滑盖式设计易于出现人为用力过大导致的排线损坏的问题，因此该方案仍影响了用户对产品的使用体验。\n\n[0005]因此，如何在不破坏屏幕完整性，又不引入新的机械结构的前提下，实现全面屏显示，是本领域亟待解决的问题。\n\n实用新型内容\n\n[0006]本实用新型提供一种显示装置，可在不破坏屏幕完整性，又不引入新的机械结构的前提下，实现全面屏显示效果。\n\n[0007]为解决上述问题，本实用新型提供的技术方案如下：\n\n[0008]一种显示面板，所述显示面板包括：\n\n[0009]显示单元，其包括主显示区和功能附加区，所述功能附加区的至少一部分被所述主显示区围绕；\n\n[0010]背光模块，其包括为主显示区提供光源的第一光源块和为所述功能附加区提供光源的第二光源块。\n\n[0011]进一步的，所述背光模块上贯穿设置有第一通孔，所述第一通孔与所述功能附加区对应，所述第二光源块设置在靠近所述第一通孔处。\n\n[0012]进一步的，所述第二光源块与所述第一通孔之间的距离小于所述第一光源块与所述第一通孔之间的距离。\n\n[0013]进一步的，所述功能附加区位于所述显示单元的边缘处，所述第二光源块位于所述第一通孔的侧部且靠近所述功能附加区。\n\n[0014]进一步的，所述背光模块包括背光板，所述第一通孔设置在所述背光板上，所述第一光源块设置在所述背光板上靠近所述显示单元的边缘处的一侧。\n\n[0015]进一步的，所述第二光源块围绕所述第一通孔设置。\n\n[0016]进一步的，所述第二光源块包括灯板及设置在所述灯板上的至少一个光源。\n\n[0017]进一步的，所述灯板上设有多个光源，所述多个光源围绕所述第一通孔分布。\n\n[0018]进一步的，所述光源为LED或Mini LED灯珠。\n\n[0019]进一步的，所述第二光源块包括围绕所述第一通孔设置的环形光源。\n\n[0020]进一步的，所述功能附加区用于对应设置电子元件，且当电子元件不工作时，所述第二光源块为所述功能附加区提供光源，以使所述主显示区与所述功能附加区均显示画面。\n\n[0021]进一步的，所述显示单元设置在所述背光模块上；所述显示单元包括相对设置的第一基板和第二基板、以及设置在所述第一基板和第二基板之间的液晶层，所述显示单元还包括设置在所述第一基板和背光模块之间的下偏光片以及设置在所述第二基板远离所述液晶层的一侧的上偏光片。\n\n[0022]进一步的，所述上偏光片与所述下偏光片上与所述功能附加区对应的区域处均设置有第二通孔。\n\n[0023]进一步的，所述第二光源块的光源包括RGB三色彩色光源、L ED或Mini LED灯珠。\n\n[0024]本实用新型还提供一种显示装置，所述显示装置包括如上述的显示面板。\n\n[0025]进一步的，所述显示装置还包括电子元件，所述电子元件与所述显示面板的功能附加区对应设置；当开启所述第二光源块时，所述电子元件不工作，所述功能附加区与所述主显示区均显示画面；当关闭所述第二光源块时，所述电子元件工作，所述功能附加区不显示画面。\n\n[0026]本实用新型的有益效果为：通过在与电子元件相对的区域设置功能附加区，可以根据需求对功能附加区进行透明态和画面显示态的切换，可实现在不破坏屏幕完整性，又不引入新的机械结构的前提下，实现全面屏显示效果，同时对为功能附加区提供光照的第二光源块的位置进行设计，使得功能附加区在位于显示面板上任意位置时均具有良好的显示和透光功能。\n\n附图说明\n\n[0027]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是实用新型的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0028]图1为本实用新型实施例一中显示装置的结构示意图；\n\n[0029]图2为本实用新型实施例二中显示装置的透视结构示意图；\n\n[0030]图3为本实用新型实施例二中显示装置的剖面图；\n\n[0031]图4为本实用新型实施例二中显示装置的部分爆炸结构示意图；\n\n[0032]图5为本实用新型实施例三中显示装置的平面结构示意图；\n\n[0033]图6为本实用新型实施例三中第二背光区的一种结构示意图；\n\n[0034]图7为本实用新型实施例三中显示装置的结构示意图；\n\n[0035]图8为本实用新型实施例三中第二背光区的另一种结构示意图；\n\n[0036]图9为本实用新型实施例四中显示装置的平面结构示意图；\n\n[0037]图10为本实用新型实施例四中第二背光区的结构示意图；\n\n[0038]图11为本实用新型实施例四中显示装置的第一结构示意图；\n\n[0039]图12为本实用新型实施例四中显示装置的部分爆炸结构示意图；\n\n[0040]图13为本实用新型实施例四中显示装置的第二结构示意图；\n\n[0041]图14为本实用新型中显示装置的平面结构示意图，其中功能附加区呈圆形；\n\n[0042]图15为本实用新型中显示装置的平面结构示意图，其中功能附加区呈矩形；\n\n[0043]图16为本实用新型中显示装置的电子元件开启状态的显示效果俯视图；\n\n[0044]图17为本实用新型中显示装置的电子元件关闭状态的显示效果俯视图。\n\n[0045]附图标记：\n\n[0046]10、显示单元；11、主显示区；12、功能附加区；13、第一基板；14、第二基板；15、液晶层；151、第一液晶层；152、第二液晶层；16、上偏光片；17、下偏光片；20、背光模块；21、第一背光区；22、第二背光区；221、透光区；222、光源区；223、透明照射区域；224、非透明照射区域；23、第一通孔；24、反射片；25、导光板；26、扩散片；27、背光板；30、电子元件；31、镜头；41、第一光源块；42、第二光源块；50、封装盖板；60、光学胶；70、第二通孔；80、分隔区；90、灯板。\n\n具体实施方式\n\n[0047]以下各实施例的说明是参考附加的图示，用以例示本实用新型可用以实施的特定实施例。本实用新型所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面] 等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本实用新型，而非用以限制本实用新型。在图中，结构相似的单元是用以相同标号表示。\n\n[0048]实施例一：\n\n[0049]一种显示面板，如图1所示，所述显示面板包括显示单元10和背光模块20。\n\n[0050]具体的，所述显示单元10设置于所述背光模块20上，用于显示画面；所述显示单元10包括主显示区11和功能附加区12，所述功能附加区12的至少一部分被所述主显示区11围绕，所述主显示区11为常规显示区，功能附加区12为透明显示区。\n\n[0051]其中，所述功能附加区12用于对应设置电子元件30，且当电子元件不工作30时，所述主显示区11和所述功能附加区12均用于显示画面；所述电子元件30工作时，所述主显示区11正常显示画面，所述功能附加区12不显示画面，此时功能附加区12为透明状态，以用于为电子元件30提供采光通道，从而实现电子元件30的功能。\n\n[0052]具体的，当电子元件不工作30时，所述主显示区11和所述功能附加区12可共同显示一个画面，也可分别显示不同的画面。\n\n[0053]需要说明的是，本实用新型所述的显示单元10可为液晶显示单元。\n\n[0054]具体的，所述背光模块20包括为主显示区11提供光源的第一光源块41和为所述功能附加区12提供光源的第二光源块42。所述第一光源块41和第二光源块42分别独立地为所述主显示区11和功能附加区12提供光源。\n\n[0055]通过设置两个独立的光源块，从而使得主显示区11和功能附加区12可以同时显示画面，又可以实现主显示区11正常显示时，功能附加区12不显示画面。\n\n[0056]需要说明的是，所述第一光源块41和所述第二光源块42均可以为RGB三色彩色光源、LED或Mini LED灯珠。\n\n[0057]其中，所述背光模块20上设置有与功能附加区12对应的第一通孔23，所述第一通孔23贯穿所述背光模块20，以为与功能附加区12对应设置的电子元件30提供采光通道。\n\n[0058]当电子元件30不工作时，所述第二光源块42为所述功能附加区12提供光源，以使所述主显示区11与所述功能附加区12共同显示画面；当电子元件30工作时，第二光源块42关闭，功能附加区1 2不显示画面，利用第一通孔23为电子元件30提供采光通道。\n\n[0059]其中，所述第二光源块42设置在靠近所述第一通孔23处。\n\n[0060]具体的，所述显示单元10包括相对设置的第一基板13和第二基板14、以及设置于所述第一基板13和第二基板14之间的液晶层1 5。\n\n[0061]其中，第一基板13可以为阵列基板，第二基板14可以为彩膜基板。\n\n[0062]在一实施方式中，所述液晶层15包括材料不同的第一液晶层1 51和第二液晶层152，所述第一液晶层151设置于所述主显示区11 处，所述第二液晶层152对应设置在所述功能附加区12处。具体地讲，所述第一液晶层151设置在所述显示单元10除去所述功能附加区12的其他区域上。\n\n[0063]在一实施方式中，所述第一液晶层151可以为现有技术的普通液晶，所述第一液晶层151包括多个液晶分子，所述液晶分子包括联苯液晶、苯基环己烷液晶或酯类液晶。所述第二液晶层152的材料包括散射型液晶；所述散射型液晶包括多个液晶分子和聚合物，可实现透明态和画面显示态的切换，聚合物可以为离子型有机电解质材料。\n\n[0064]所述第一液晶层151(即普通液晶)在施加电压后液晶分子发生旋转，控制光的透过率实现灰阶显示；所述第二液晶层152(即散射型液晶)中由于增加了某些聚合物，二者折射率不同，通过电压控制液晶和聚合物的表面产生折射率差，使得光线透过或者在二者表面发生散射，因此可以实现透明态或者雾态。在透明态下可以透光，雾态下实现光线的散射进而用于显示画面。\n\n[0065]所述第二液晶层152使用的具体过程为：液晶与聚合物具有相同的各向异性的介电常数，不加电压或电压低于阈值电压时，液晶分子呈水平排列，与其内聚合物材料不存在折射率差，因此不发生散射；当施加的电压高于阈值电压时，液晶分子发生旋转，其方向沿着垂直方向排列，改变了液晶的介电常数的各向异性的特性，因此在液晶和聚合物的表面产生折射率差，光线在此处发生散射，被观察者看到。\n\n[0066]具体的，所述显示单元10还包括设置在所述第一基板13与背光模块20之间的上下偏光片17，以及，设置在所述第二基板14远离所述液晶层15的一侧上的上偏光片16。\n\n[0067]在一实施方式中，所述电子元件30包括摄像头、闪光灯、光线传感器、呼吸灯传感器、距离传感器、指纹扫描仪传感器、麦克风传感器或透明天线传感器中的一种或其组合。\n\n[0068]需要说明的是，以电子元件30为摄像头为例，不需要摄像头工作时，此时摄像头关闭，所述显示单元10呈画面显示状态以进行画面显示，第一光源块41为主显示区11的显示提供光源，第二光源块42为所述功能附加区12的显示提供光源，此时主显示区11 和功能附加区12共同显示画面，显示单元10处于全面屏显示状态；需要摄像头工作时，第一光源块41为主显示区11提供光源，主显示区正常显示，而第二光源块42关闭，此时功能附加区12的第二液晶层152为透明状态，外界光线通过功能附加区12和第一通孔23 进入摄像头以完成摄像工作。\n\n[0069]通过在与电子元件30相对应的区域设置功能附加区12，并利用第二光源块42为功能附加区12提供光源，根据需求对功能附加区12进行透明态和画面显示态的切换，可实现在不破坏屏幕完整性，又不引入新的机械结构的前提下，实现全面屏显示效果。\n\n[0070]需要说明的是，所述功能附加区12可以位于显示单元10上的任意位置处，所述功能附加区12的形状呈刘海状、美人尖、水滴状、圆形、三角形、矩形或多边形中的任一种。\n\n[0071]具体的，所述背光模块20还包括用于设置第一光源块41的第一背光区21和用于设置第二光源块42的第二背光区22，所述第二背光区22的至少一部分被所述第一背光区21围绕，所述第一通孔2 3位于所述第二背光区22。\n\n[0072]其中，所述显示单元10在所述背光模块20上的正投影覆盖所述第二背光区22，即第二光源块42设置于所述显示单元10在所述背光模块20上的正投影所限定的区域内。\n\n[0073]实施例二：\n\n[0074]一种显示面板，如图2至图4所示，其与实施例一的不同之处在于：所述功能附加区12位于所述显示单元10的边缘处，所述第二光源块42位于所述第一通孔23的侧部且靠近所述功能附加区1 2，以通过所述第二光源块42对所述功能附加区12侧向给光，防止第二光源块42对功能附加区12的显示和透光造成影响。\n\n[0075]进一步的，所述第二光源块42位于所述显示单元10的侧部且靠近所述功能附加区12。\n\n[0076]具体的，所述背光模块20包括背光板27，所述第一通孔23设置在所述背光板27上，所述第一光源块41设置在所述背光板27上靠近所述显示单元10的边缘处的一侧。\n\n[0077]需要说明的是，背光板27可以包括反射片、导光板以及扩散片等光学膜片。\n\n[0078]在一实施方式中，所述第一光源块41设置在远离所述第一通孔23处，所述第一光源块41包括白色光源，用以给所述第一液晶层151提供光源。所述第二光源块42设置在靠近所述第一通孔23 处，所述第二光源块42包括RGB三色彩色光源，用以给对应设置在所述功能附加区12处的所述第二液晶层152提供光源以显示彩色画面。\n\n[0079]进一步的，所述第二光源块42与所述第一通孔23之间的距离小于所述第一光源块41与所述第一通孔23之间的距离。\n\n[0080]在一实施方式中，所述第一光源块41和所述第二光源块42分别位于所述背光板27的两端。\n\n[0081]需要说明的是，参见图4，具体实施中，所述第一光源块41可以放置于所述背光板27的底端侧向给光，所述第二光源块42可以放置于所述背光板27的顶端侧向给光，第二光源块42放置在所述背光板27的顶端是实现该目的优选方式，其他放置方式的实施例均受到本专利的保护。\n\n[0082]具体的，所述上下偏光片17和所述上偏光片16对应于所述功能附加区12的位置处均设有第二通孔70。\n\n[0083]可以理解的是，所述上下偏光片17和上偏光片16分别位于所述第一液晶层151的两侧，其作用是提供线偏振光以及实现所述第一液晶层151显示画面的明暗变化。在所述上下偏光片17和上偏光片16对应所述第一通孔23相应的位置进行挖孔，即设置所述第二通孔70，形成无偏光功能的区域，以保证所述第二液晶层152在透明状态下的透光能力。\n\n[0084]在一实施方式中，所述第一通孔23的面积小于所述第二通孔7 0的面积。这样设置可以保证所述第二液晶层152可以全部显示而不被遮挡。\n\n[0085]实施例三：\n\n[0086]一种显示面板，如图5至图7所示，其与实施例一的不同之处在于：所述第二光源块42围绕所述第一通孔23设置。\n\n[0087]其中，所述功能附加区12可以位于显示单元10上的任意位置。功能附加区12既可以实现拍摄效果，也可以实现显示效果。\n\n[0088]在一实施方式中，以电子元件30为摄像头为例，功能附加区1 2的形状为圆形，电子元件30包括镜头31，镜头31的形状为与功能附加区对应的圆形。\n\n[0089]当功能附加区12进行拍摄处理时，镜头31用以获取入射至功能附加区12的光线，以便摄像头实现成像。镜头31位于功能附加区12中心，镜头31的中心轴线与功能附加区12的中心轴线位于同一直线上。功能附加区12、镜头31皆为圆形，镜头31边缘与功能附加区12边缘形成同心圆结构。\n\n[0090]具体的，所述第二背光区22包括与所述第一通孔23对应的透光区221以及围绕所述透光区221设置的光源区222，所述第二光源块42设置于所述光源区222内。\n\n[0091]在一实施方式中，光源区222为圆环形，设于所述第二背光区 22内，且与第一背光区21相连接。光源区222包括一内圆边及一外圆边，所述外圆边连接至第一背光区21。光源区222表面为镀银层，光源区222内圆直径的尺寸与透光区221的直径的尺寸相对应，光源区222外径的尺寸与第一背光区21围成的圆形的尺寸相对应。\n\n[0092]在一实施方式中，所述第二光源块42包括围绕所述透光区221 设置的环形光源。\n\n[0093]在另一实施方式中，所述第二光源块42包括至少两个围绕所述第一通孔23设置的光源，所述光源均匀分布。\n\n[0094]两个以上光源均匀分布于光源区222内，且突出于光源区222 表面，确保第二光源块42散发出的光束可以将为功能附加区12的视野范围完全覆盖提供均匀光源，使得功能附加区12内不会出现亮区或者暗区，保证显示均匀且显示画面清晰，提升显示面板的显示质量。第二光源块42为LED灯或Mini LED灯珠，其亮度是由灯的规格决定。\n\n[0095]当显示面板的功能附加区12用以显示时，第二光源块42发光将功能附加区12区域全部照亮，使得功能附加区12可以显示影像，与主显示区11共同显示画面，此时画面达到全屏幕显示。第二光源块42散发出的光束均匀地为功能附加区12提供光线，避免出现功能附加区12内的光线不集中、不均匀等问题。\n\n[0096]另外，由于功能附加区12的设计电路与主显示区11的设计电路有所区别，因而，在功能附加区12的电路进行设计中，可以通过调节面板电压来改变光的透过量进而来改变显示的亮度，进而可以提高显示面板的显示质量。\n\n[0097]在一实施方式中，第二光源块42包括的光源的数量优选为4、 6、8，而本领域技术人员也可以根据光源区222分布范围的大小进行设置光源的数量。\n\n[0098]在一实施方式中，所述主显示区11与所述功能附加区12之间设置有分隔区80，分隔区80为透明光学胶围成的圆环形，用以隔离第一液晶层151和第二液晶层152。这样，位于光源区222的第二光源块42的光线能也能将分隔区80覆盖，避免分隔区80会出现暗区的问题，提高显示面板的显示质量。\n\n[0099]需要说明的是，透明光学胶具有较强的粘性，设于第一基板1 3与第二基板14之间，可以用以固定第一基板13与第二基板14。\n\n[0100]在一实施方式中，镜头31和第二光源块42均设于第一基板13 下方。镜头31的中心轴线与功能附加区12的中心轴线位于同一直线上，第二光源块42为功能附加区12提供光源，使光线从不同角度入射到功能附加区12内，使得功能附加区12内的光线均匀分布，提升显示画面的清晰度，保证显示面板的显示质量。\n\n[0101]需要说明的是，所述第二光源块42可以设置于所述第一通孔2 3的周侧，也可以位于与第一通孔23对应的区域处。\n\n[0102]如图8所示，第二光源块42突出于光源区222表面，每个第二光源块42的光线均匀地朝各个角度扩散，使光线从不同角度入射到功能附加区12，使得功能附加区12内的光线均匀分布，提升显示画面的清晰度，保证显示面板的显示质量。\n\n[0103]实施例四：\n\n[0104]一种显示面板，如图8至图11所示，其与实施例一的不同之处在于：所述第二光源块42围绕所述第一通孔23设置，且设置在所述背光模块20远离所述显示单元10的一侧，以为与第一通孔23对应的功能附加区12提供均匀的光源。\n\n[0105]具体的，所述第二光源块42包括灯板90及设置在所述灯板90 上的至少一个光源。\n\n[0106]所述第二背光区22包括透明照射区域223以及非透明照射区域224，所述非透明照射区域224围绕所述透明照射区域223设置，所述透明照射区域223与所述功能附加区12相对应，所述功能附加区12可以位于显示单元10上的任意位置。\n\n[0107]需要说明的是，所述第一通孔23对应于透明照射区域233，所述第二光源块42所在的区域对应于非透明照射区域224，所述第一通孔23对应的区域和第二光源块42所在的区域共同形成第二背光区22。\n\n[0108]其中，所述第一通孔23贯穿所述背光模块20，所述第一通孔2 3的形状可以为方形或圆形。\n\n[0109]在一实施方式中，所述第二光源块42包括多个光源，所述第二光源块42中的光源呈阵列式的分布于所述灯板90上，所述多个光源围绕所述第一通孔23分布。\n\n[0110]需要说明的是，所述光源可以为Mini LED灯珠。\n\n[0111]在一实施方式中，所述灯板90的形状为圆形或者方形，所述透明照射区域223形状为一圆形。\n\n[0112]所述非透明照射区域224内的Mini LED灯珠出射光方向可调，优选的保证所述透明照射区域223获得均匀的光源，以实现显示模式下透明照射区的正常显示。\n\n[0113]在第二背光区22进行采光时，所述Mini LED灯珠光源关闭，避免影响电子元件30采集的工作。\n\n[0114]当电子元件不工作时，所述第二光源块42为所述功能附加区1 2提供光源，以使所述主显示区11与所述功能附加区12共同显示画面,从而进入全屏显示状态。\n\n[0115]在一实施方式中，如图12和图13所示，所述背光模块20包括依次设置的反射片24、导光板25以及扩散片26。\n\n[0116]需要说明的是，所述第一光源块41第二光源块42与第一通孔2 3对应设置且位于第一通孔23远离显示单元10的一侧，所述第一光源块41第二光源块42可以为侧入式光源或直下式光源，实际实施中，所述背光模块20还可以包括背框以及胶框等。\n\n[0117]所述第一光源块41第二光源块42可以为侧入式光源时，第一光源块41第二光源块42可以为一个或多个设置于背光模块20侧部的Mini LED灯珠或LED；所述第一光源块41第二光源块42为直下式光源时，第一光源块41第二光源块42可以为多个均匀分布于第一背光区21的Mini LED灯珠或LED。\n\n[0118]所述导光板25设于所述反射片24上；所述扩散片26设于所述导光板25远离所述反射片24的一侧。\n\n[0119]所述导光板25与所述扩散片26的组合，主要是为了将第一光源块41的光扩散至显示单元10，用以提高所述显示单元10的亮度。\n\n[0120]其中，所述上下偏光片17和所述上偏光片16对应于所述功能附加区12的位置处均设有第二通孔70。\n\n[0121]可以理解的是，所述上下偏光片17和上偏光片16分别位于所述第一液晶层151的两侧，其作用是提供线偏振光以及实现所述第一液晶层151显示画面的明暗变化。在所述上下偏光片17和上偏光片16对应所述第一通孔23相应的位置进行挖孔，即设置所述第二通孔70，形成无偏光功能的区域，以保证所述第二液晶层152在透明状态下的透光能力。\n\n[0122]在一实施方式中，所述上偏光片16远离所述液晶层15的一侧上还设置有封装盖板50，所述封装盖板50通过光学胶层60与所述上偏光片16粘结，所述封装盖板50可以为透明玻璃盖板，也可以为透明塑料盖板。\n\n[0123]通过在背光模块20上的第二背光区22进行挖孔，接着在所述透明照射区域223周围设置灯板90以及第二光源块42。并在所述透明照射区域223的下方设置一电子元件30，用以形成完整的显示装置。在显示模式下，所述功能附加区12获得均匀的光源，以实现所述显示装置在显示模式下时功能附加区12能够正常显示，实现真正的的屏占比。在所述电子元件30处于采光模式下，第二光源块42关闭，防止影响所述电子元件30进行采光。\n\n[0124]基于上述显示面板，本实用新型还提供一种显示装置，所述显示装置包括上述实施例一至四中任意一项所述的显示面板。\n\n[0125]其中，所述显示装置还包括电子元件30，所述电子元件30与所述显示面板的功能附加区12对应设置；当开启所述第二光源块 42时，所述电子元件30不工作，所述功能附加区12与所述主显示区11均显示画面；当关闭所述第二光源块42时，所述电子元件30工作，所述功能附加区12不显示画面，所述主显示区11可正常显示画面。\n\n[0126]在一实施方式中，电子元件30位于第一通孔23的外部且位于所述背光模块20远离显示单元10的一侧。\n\n[0127]需要说明的是，所述电子元件30包括摄像头、闪光灯、光线传感器、呼吸灯传感器、距离传感器、指纹扫描仪传感器、麦克风传感器或透明天线传感器中的一种或其组合。\n\n[0128]请参阅图14至图16所示，在一实施方式中，所述第一通孔23 或/和所述第二通孔70呈刘海状、美人尖、水滴状、圆形、三角形、矩形或多边形中的任一种；所述功能附加区12呈刘海状、美人尖、水滴状、圆形、三角形、矩形或多边形中的任一种。\n\n[0129]请参阅图16和图17所示，以电子元件30为摄像头为例，图16 和图17分别为摄像头开启和关闭状态的显示效果俯视图。如图16 所示，摄像头开启时，显示画面消失，呈现透明状态，为其后摄像头提供采光通道。如图17所示，当摄像头关闭时，呈现画面显示状态，此时画面达到全屏幕显示。\n\n[0130]可以理解的是，本实用新型提供的显示装置可以是手机、电脑、电视、车载显示装置等其他具有显示功能的显示装置，本实用新型不作具体的限制。\n\n[0131]本实用新型的有益效果为：通过在与电子元件30相对的区域设置功能附加区12，可以根据需求对功能附加区12进行透明态和画面显示态的切换，可实现在不破坏屏幕完整性，又不引入新的机械结构的前提下，实现全面屏显示效果，同时对为功能附加区1 2提供光照的第二光源块42的位置进行设计，使得功能附加区12在位于显示单元10上任意位置时均具有良好的显示和透光功能。\n\n[0132]综上所述，虽然本实用新型已以优选实施例揭露如上，但上述优选实施例并非用以限制本实用新型，本领域的普通技术人员，在不脱离本实用新型的精神和范围内，均可作各种更动与润饰，因此本实用新型的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本实用新型涉及显示技术领域，尤其涉及一种显示面板及显示装置。\n\n背景技术\n\n[0002]随着移动便携设备的普及化程度越来越高，高屏占比屏幕由于能给予用户更好视觉体验而成为手机、平板等电子设备的未来发展趋势。屏占比用于表示屏幕和手机前面板面积的相对比值，其反映了用户对于移动设备的视觉体验，如何实现100％的屏占比的显示效果是目前行业亟待解决的难题。\n\n[0003]但是对于手机等便携设备而言，除了显示屏幕以外，还需在前面板顶部位置放置一些电子元件如摄像头、闪光灯、光线传感器等，这些器件需要从面板正面采光，由于传统屏幕会对上述电子元件进行遮挡，目前行业内的普遍做法是将前面板做异形切割，裁剪掉部分屏幕以实现透光，以此保证电子元件的正常工作。上述做法在破坏整块屏幕的完整性的同时，也始终无法做到100％屏占比的全面显示。\n\n[0004]另一种全面屏的解决方案是将电子元件如前置摄像头做到单独的机械模块上作为独立控制的部件，默认隐藏在机身内部，当用户有拍照、拍视频等需求的时候，摄像头会响应系统的指令自动弹出或手动滑出，即所谓“弹出式”或“滑盖式”设计。然而，受限于机械结构的因素，其摄像头弹出时间缓慢，其开启速度落后于传统意义的摄像头；其次由于机械结构受到装配工艺的影响，使得弹出功能模块与显示面板本体之间存在间隙，易受到外界粉末灰尘侵入，不能做到良好的防水防尘；再者弹出式设计其机械结构存在较高的故障率，滑盖式设计易于出现人为用力过大导致的排线损坏的问题，因此该方案仍影响了用户对产品的使用体验。\n\n[0005]因此，如何在不破坏屏幕完整性，又不引入新的机械结构的前提下，实现全面屏显示，是本领域亟待解决的问题。\n\n实用新型内容\n\n[0006]本实用新型提供一种显示装置，可在不破坏屏幕完整性，又不引入新的机械结构的前提下，实现全面屏显示效果。\n\n[0007]为解决上述问题，本实用新型提供的技术方案如下：\n\n[0008]一种显示面板，所述显示面板包括：\n\n[0009]显示单元，其包括主显示区和功能附加区，所述功能附加区的至少一部分被所述主显示区围绕；\n\n[0010]背光模块，其包括为主显示区提供光源的第一光源块和为所述功能附加区提供光源的第二光源块。\n\n[0011]进一步的，所述背光模块上贯穿设置有第一通孔，所述第一通孔与所述功能附加区对应，所述第二光源块设置在靠近所述第一通孔处。\n\n[0012]进一步的，所述第二光源块与所述第一通孔之间的距离小于所述第一光源块与所述第一通孔之间的距离。\n\n[0013]进一步的，所述功能附加区位于所述显示单元的边缘处，所述第二光源块位于所述第一通孔的侧部且靠近所述功能附加区。\n\n[0014]进一步的，所述背光模块包括背光板，所述第一通孔设置在所述背光板上，所述第一光源块设置在所述背光板上靠近所述显示单元的边缘处的一侧。\n\n[0015]进一步的，所述第二光源块围绕所述第一通孔设置。\n\n[0016]进一步的，所述第二光源块包括灯板及设置在所述灯板上的至少一个光源。\n\n[0017]进一步的，所述灯板上设有多个光源，所述多个光源围绕所述第一通孔分布。\n\n[0018]进一步的，所述光源为LED或Mini LED灯珠。\n\n[0019]进一步的，所述第二光源块包括围绕所述第一通孔设置的环形光源。\n\n[0020]进一步的，所述功能附加区用于对应设置电子元件，且当电子元件不工作时，所述第二光源块为所述功能附加区提供光源，以使所述主显示区与所述功能附加区均显示画面。\n\n[0021]进一步的，所述显示单元设置在所述背光模块上；所述显示单元包括相对设置的第一基板和第二基板、以及设置在所述第一基板和第二基板之间的液晶层，所述显示单元还包括设置在所述第一基板和背光模块之间的下偏光片以及设置在所述第二基板远离所述液晶层的一侧的上偏光片。\n\n[0022]进一步的，所述上偏光片与所述下偏光片上与所述功能附加区对应的区域处均设置有第二通孔。\n\n[0023]进一步的，所述第二光源块的光源包括RGB三色彩色光源、L ED或Mini LED灯珠。\n\n[0024]本实用新型还提供一种显示装置，所述显示装置包括如上述的显示面板。\n\n[0025]进一步的，所述显示装置还包括电子元件，所述电子元件与所述显示面板的功能附加区对应设置；当开启所述第二光源块时，所述电子元件不工作，所述功能附加区与所述主显示区均显示画面；当关闭所述第二光源块时，所述电子元件工作，所述功能附加区不显示画面。\n\n[0026]本实用新型的有益效果为：通过在与电子元件相对的区域设置功能附加区，可以根据需求对功能附加区进行透明态和画面显示态的切换，可实现在不破坏屏幕完整性，又不引入新的机械结构的前提下，实现全面屏显示效果，同时对为功能附加区提供光照的第二光源块的位置进行设计，使得功能附加区在位于显示面板上任意位置时均具有良好的显示和透光功能。\n\n附图说明\n\n[0027]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是实用新型的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0028]图1为本实用新型实施例一中显示装置的结构示意图；\n\n[0029]图2为本实用新型实施例二中显示装置的透视结构示意图；\n\n[0030]图3为本实用新型实施例二中显示装置的剖面图；\n\n[0031]图4为本实用新型实施例二中显示装置的部分爆炸结构示意图；\n\n[0032]图5为本实用新型实施例三中显示装置的平面结构示意图；\n\n[0033]图6为本实用新型实施例三中第二背光区的一种结构示意图；\n\n[0034]图7为本实用新型实施例三中显示装置的结构示意图；\n\n[0035]图8为本实用新型实施例三中第二背光区的另一种结构示意图；\n\n[0036]图9为本实用新型实施例四中显示装置的平面结构示意图；\n\n[0037]图10为本实用新型实施例四中第二背光区的结构示意图；\n\n[0038]图11为本实用新型实施例四中显示装置的第一结构示意图；\n\n[0039]图12为本实用新型实施例四中显示装置的部分爆炸结构示意图；\n\n[0040]图13为本实用新型实施例四中显示装置的第二结构示意图；\n\n[0041]图14为本实用新型中显示装置的平面结构示意图，其中功能附加区呈圆形；\n\n[0042]图15为本实用新型中显示装置的平面结构示意图，其中功能附加区呈矩形；\n\n[0043]图16为本实用新型中显示装置的电子元件开启状态的显示效果俯视图；\n\n[0044]图17为本实用新型中显示装置的电子元件关闭状态的显示效果俯视图。\n\n[0045]附图标记：\n\n[0046]10、显示单元；11、主显示区；12、功能附加区；13、第一基板；14、第二基板；15、液晶层；151、第一液晶层；152、第二液晶层；16、上偏光片；17、下偏光片；20、背光模块；21、第一背光区；22、第二背光区；221、透光区；222、光源区；223、透明照射区域；224、非透明照射区域；23、第一通孔；24、反射片；25、导光板；26、扩散片；27、背光板；30、电子元件；31、镜头；41、第一光源块；42、第二光源块；50、封装盖板；60、光学胶；70、第二通孔；80、分隔区；90、灯板。\n\n具体实施方式\n\n[0047]以下各实施例的说明是参考附加的图示，用以例示本实用新型可用以实施的特定实施例。本实用新型所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面] 等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本实用新型，而非用以限制本实用新型。在图中，结构相似的单元是用以相同标号表示。\n\n[0048]实施例一：\n\n[0049]一种显示面板，如图1所示，所述显示面板包括显示单元10和背光模块20。\n\n[0050]具体的，所述显示单元10设置于所述背光模块20上，用于显示画面；所述显示单元10包括主显示区11和功能附加区12，所述功能附加区12的至少一部分被所述主显示区11围绕，所述主显示区11为常规显示区，功能附加区12为透明显示区。\n\n[0051]其中，所述功能附加区12用于对应设置电子元件30，且当电子元件不工作30时，所述主显示区11和所述功能附加区12均用于显示画面；所述电子元件30工作时，所述主显示区11正常显示画面，所述功能附加区12不显示画面，此时功能附加区12为透明状态，以用于为电子元件30提供采光通道，从而实现电子元件30的功能。\n\n[0052]具体的，当电子元件不工作30时，所述主显示区11和所述功能附加区12可共同显示一个画面，也可分别显示不同的画面。\n\n[0053]需要说明的是，本实用新型所述的显示单元10可为液晶显示单元。\n\n[0054]具体的，所述背光模块20包括为主显示区11提供光源的第一光源块41和为所述功能附加区12提供光源的第二光源块42。所述第一光源块41和第二光源块42分别独立地为所述主显示区11和功能附加区12提供光源。\n\n[0055]通过设置两个独立的光源块，从而使得主显示区11和功能附加区12可以同时显示画面，又可以实现主显示区11正常显示时，功能附加区12不显示画面。\n\n[0056]需要说明的是，所述第一光源块41和所述第二光源块42均可以为RGB三色彩色光源、LED或Mini LED灯珠。\n\n[0057]其中，所述背光模块20上设置有与功能附加区12对应的第一通孔23，所述第一通孔23贯穿所述背光模块20，以为与功能附加区12对应设置的电子元件30提供采光通道。\n\n[0058]当电子元件30不工作时，所述第二光源块42为所述功能附加区12提供光源，以使所述主显示区11与所述功能附加区12共同显示画面；当电子元件30工作时，第二光源块42关闭，功能附加区1 2不显示画面，利用第一通孔23为电子元件30提供采光通道。\n\n[0059]其中，所述第二光源块42设置在靠近所述第一通孔23处。\n\n[0060]具体的，所述显示单元10包括相对设置的第一基板13和第二基板14、以及设置于所述第一基板13和第二基板14之间的液晶层1 5。\n\n[0061]其中，第一基板13可以为阵列基板，第二基板14可以为彩膜基板。\n\n[0062]在一实施方式中，所述液晶层15包括材料不同的第一液晶层1 51和第二液晶层152，所述第一液晶层151设置于所述主显示区11 处，所述第二液晶层152对应设置在所述功能附加区12处。具体地讲，所述第一液晶层151设置在所述显示单元10除去所述功能附加区12的其他区域上。\n\n[0063]在一实施方式中，所述第一液晶层151可以为现有技术的普通液晶，所述第一液晶层151包括多个液晶分子，所述液晶分子包括联苯液晶、苯基环己烷液晶或酯类液晶。所述第二液晶层152的材料包括散射型液晶；所述散射型液晶包括多个液晶分子和聚合物，可实现透明态和画面显示态的切换，聚合物可以为离子型有机电解质材料。\n\n[0064]所述第一液晶层151(即普通液晶)在施加电压后液晶分子发生旋转，控制光的透过率实现灰阶显示；所述第二液晶层152(即散射型液晶)中由于增加了某些聚合物，二者折射率不同，通过电压控制液晶和聚合物的表面产生折射率差，使得光线透过或者在二者表面发生散射，因此可以实现透明态或者雾态。在透明态下可以透光，雾态下实现光线的散射进而用于显示画面。\n\n[0065]所述第二液晶层152使用的具体过程为：液晶与聚合物具有相同的各向异性的介电常数，不加电压或电压低于阈值电压时，液晶分子呈水平排列，与其内聚合物材料不存在折射率差，因此不发生散射；当施加的电压高于阈值电压时，液晶分子发生旋转，其方向沿着垂直方向排列，改变了液晶的介电常数的各向异性的特性，因此在液晶和聚合物的表面产生折射率差，光线在此处发生散射，被观察者看到。\n\n[0066]具体的，所述显示单元10还包括设置在所述第一基板13与背光模块20之间的上下偏光片17，以及，设置在所述第二基板14远离所述液晶层15的一侧上的上偏光片16。\n\n[0067]在一实施方式中，所述电子元件30包括摄像头、闪光灯、光线传感器、呼吸灯传感器、距离传感器、指纹扫描仪传感器、麦克风传感器或透明天线传感器中的一种或其组合。\n\n[0068]需要说明的是，以电子元件30为摄像头为例，不需要摄像头工作时，此时摄像头关闭，所述显示单元10呈画面显示状态以进行画面显示，第一光源块41为主显示区11的显示提供光源，第二光源块42为所述功能附加区12的显示提供光源，此时主显示区11 和功能附加区12共同显示画面，显示单元10处于全面屏显示状态；需要摄像头工作时，第一光源块41为主显示区11提供光源，主显示区正常显示，而第二光源块42关闭，此时功能附加区12的第二液晶层152为透明状态，外界光线通过功能附加区12和第一通孔23 进入摄像头以完成摄像工作。\n\n[0069]通过在与电子元件30相对应的区域设置功能附加区12，并利用第二光源块42为功能附加区12提供光源，根据需求对功能附加区12进行透明态和画面显示态的切换，可实现在不破坏屏幕完整性，又不引入新的机械结构的前提下，实现全面屏显示效果。\n\n[0070]需要说明的是，所述功能附加区12可以位于显示单元10上的任意位置处，所述功能附加区12的形状呈刘海状、美人尖、水滴状、圆形、三角形、矩形或多边形中的任一种。\n\n[0071]具体的，所述背光模块20还包括用于设置第一光源块41的第一背光区21和用于设置第二光源块42的第二背光区22，所述第二背光区22的至少一部分被所述第一背光区21围绕，所述第一通孔2 3位于所述第二背光区22。\n\n[0072]其中，所述显示单元10在所述背光模块20上的正投影覆盖所述第二背光区22，即第二光源块42设置于所述显示单元10在所述背光模块20上的正投影所限定的区域内。\n\n[0073]实施例二：\n\n[0074]一种显示面板，如图2至图4所示，其与实施例一的不同之处在于：所述功能附加区12位于所述显示单元10的边缘处，所述第二光源块42位于所述第一通孔23的侧部且靠近所述功能附加区1 2，以通过所述第二光源块42对所述功能附加区12侧向给光，防止第二光源块42对功能附加区12的显示和透光造成影响。\n\n[0075]进一步的，所述第二光源块42位于所述显示单元10的侧部且靠近所述功能附加区12。\n\n[0076]具体的，所述背光模块20包括背光板27，所述第一通孔23设置在所述背光板27上，所述第一光源块41设置在所述背光板27上靠近所述显示单元10的边缘处的一侧。\n\n[0077]需要说明的是，背光板27可以包括反射片、导光板以及扩散片等光学膜片。\n\n[0078]在一实施方式中，所述第一光源块41设置在远离所述第一通孔23处，所述第一光源块41包括白色光源，用以给所述第一液晶层151提供光源。所述第二光源块42设置在靠近所述第一通孔23 处，所述第二光源块42包括RGB三色彩色光源，用以给对应设置在所述功能附加区12处的所述第二液晶层152提供光源以显示彩色画面。\n\n[0079]进一步的，所述第二光源块42与所述第一通孔23之间的距离小于所述第一光源块41与所述第一通孔23之间的距离。\n\n[0080]在一实施方式中，所述第一光源块41和所述第二光源块42分别位于所述背光板27的两端。\n\n[0081]需要说明的是，参见图4，具体实施中，所述第一光源块41可以放置于所述背光板27的底端侧向给光，所述第二光源块42可以放置于所述背光板27的顶端侧向给光，第二光源块42放置在所述背光板27的顶端是实现该目的优选方式，其他放置方式的实施例均受到本专利的保护。\n\n[0082]具体的，所述上下偏光片17和所述上偏光片16对应于所述功能附加区12的位置处均设有第二通孔70。\n\n[0083]可以理解的是，所述上下偏光片17和上偏光片16分别位于所述第一液晶层151的两侧，其作用是提供线偏振光以及实现所述第一液晶层151显示画面的明暗变化。在所述上下偏光片17和上偏光片16对应所述第一通孔23相应的位置进行挖孔，即设置所述第二通孔70，形成无偏光功能的区域，以保证所述第二液晶层152在透明状态下的透光能力。\n\n[0084]在一实施方式中，所述第一通孔23的面积小于所述第二通孔7 0的面积。这样设置可以保证所述第二液晶层152可以全部显示而不被遮挡。\n\n[0085]实施例三：\n\n[0086]一种显示面板，如图5至图7所示，其与实施例一的不同之处在于：所述第二光源块42围绕所述第一通孔23设置。\n\n[0087]其中，所述功能附加区12可以位于显示单元10上的任意位置。功能附加区12既可以实现拍摄效果，也可以实现显示效果。\n\n[0088]在一实施方式中，以电子元件30为摄像头为例，功能附加区1 2的形状为圆形，电子元件30包括镜头31，镜头31的形状为与功能附加区对应的圆形。\n\n[0089]当功能附加区12进行拍摄处理时，镜头31用以获取入射至功能附加区12的光线，以便摄像头实现成像。镜头31位于功能附加区12中心，镜头31的中心轴线与功能附加区12的中心轴线位于同一直线上。功能附加区12、镜头31皆为圆形，镜头31边缘与功能附加区12边缘形成同心圆结构。\n\n[0090]具体的，所述第二背光区22包括与所述第一通孔23对应的透光区221以及围绕所述透光区221设置的光源区222，所述第二光源块42设置于所述光源区222内。\n\n[0091]在一实施方式中，光源区222为圆环形，设于所述第二背光区 22内，且与第一背光区21相连接。光源区222包括一内圆边及一外圆边，所述外圆边连接至第一背光区21。光源区222表面为镀银层，光源区222内圆直径的尺寸与透光区221的直径的尺寸相对应，光源区222外径的尺寸与第一背光区21围成的圆形的尺寸相对应。\n\n[0092]在一实施方式中，所述第二光源块42包括围绕所述透光区221 设置的环形光源。\n\n[0093]在另一实施方式中，所述第二光源块42包括至少两个围绕所述第一通孔23设置的光源，所述光源均匀分布。\n\n[0094]两个以上光源均匀分布于光源区222内，且突出于光源区222 表面，确保第二光源块42散发出的光束可以将为功能附加区12的视野范围完全覆盖提供均匀光源，使得功能附加区12内不会出现亮区或者暗区，保证显示均匀且显示画面清晰，提升显示面板的显示质量。第二光源块42为LED灯或Mini LED灯珠，其亮度是由灯的规格决定。\n\n[0095]当显示面板的功能附加区12用以显示时，第二光源块42发光将功能附加区12区域全部照亮，使得功能附加区12可以显示影像，与主显示区11共同显示画面，此时画面达到全屏幕显示。第二光源块42散发出的光束均匀地为功能附加区12提供光线，避免出现功能附加区12内的光线不集中、不均匀等问题。\n\n[0096]另外，由于功能附加区12的设计电路与主显示区11的设计电路有所区别，因而，在功能附加区12的电路进行设计中，可以通过调节面板电压来改变光的透过量进而来改变显示的亮度，进而可以提高显示面板的显示质量。\n\n[0097]在一实施方式中，第二光源块42包括的光源的数量优选为4、 6、8，而本领域技术人员也可以根据光源区222分布范围的大小进行设置光源的数量。\n\n[0098]在一实施方式中，所述主显示区11与所述功能附加区12之间设置有分隔区80，分隔区80为透明光学胶围成的圆环形，用以隔离第一液晶层151和第二液晶层152。这样，位于光源区222的第二光源块42的光线能也能将分隔区80覆盖，避免分隔区80会出现暗区的问题，提高显示面板的显示质量。\n\n[0099]需要说明的是，透明光学胶具有较强的粘性，设于第一基板1 3与第二基板14之间，可以用以固定第一基板13与第二基板14。\n\n[0100]在一实施方式中，镜头31和第二光源块42均设于第一基板13 下方。镜头31的中心轴线与功能附加区12的中心轴线位于同一直线上，第二光源块42为功能附加区12提供光源，使光线从不同角度入射到功能附加区12内，使得功能附加区12内的光线均匀分布，提升显示画面的清晰度，保证显示面板的显示质量。\n\n[0101]需要说明的是，所述第二光源块42可以设置于所述第一通孔2 3的周侧，也可以位于与第一通孔23对应的区域处。\n\n[0102]如图8所示，第二光源块42突出于光源区222表面，每个第二光源块42的光线均匀地朝各个角度扩散，使光线从不同角度入射到功能附加区12，使得功能附加区12内的光线均匀分布，提升显示画面的清晰度，保证显示面板的显示质量。\n\n[0103]实施例四：\n\n[0104]一种显示面板，如图8至图11所示，其与实施例一的不同之处在于：所述第二光源块42围绕所述第一通孔23设置，且设置在所述背光模块20远离所述显示单元10的一侧，以为与第一通孔23对应的功能附加区12提供均匀的光源。\n\n[0105]具体的，所述第二光源块42包括灯板90及设置在所述灯板90 上的至少一个光源。\n\n[0106]所述第二背光区22包括透明照射区域223以及非透明照射区域224，所述非透明照射区域224围绕所述透明照射区域223设置，所述透明照射区域223与所述功能附加区12相对应，所述功能附加区12可以位于显示单元10上的任意位置。\n\n[0107]需要说明的是，所述第一通孔23对应于透明照射区域233，所述第二光源块42所在的区域对应于非透明照射区域224，所述第一通孔23对应的区域和第二光源块42所在的区域共同形成第二背光区22。\n\n[0108]其中，所述第一通孔23贯穿所述背光模块20，所述第一通孔2 3的形状可以为方形或圆形。\n\n[0109]在一实施方式中，所述第二光源块42包括多个光源，所述第二光源块42中的光源呈阵列式的分布于所述灯板90上，所述多个光源围绕所述第一通孔23分布。\n\n[0110]需要说明的是，所述光源可以为Mini LED灯珠。\n\n[0111]在一实施方式中，所述灯板90的形状为圆形或者方形，所述透明照射区域223形状为一圆形。\n\n[0112]所述非透明照射区域224内的Mini LED灯珠出射光方向可调，优选的保证所述透明照射区域223获得均匀的光源，以实现显示模式下透明照射区的正常显示。\n\n[0113]在第二背光区22进行采光时，所述Mini LED灯珠光源关闭，避免影响电子元件30采集的工作。\n\n[0114]当电子元件不工作时，所述第二光源块42为所述功能附加区1 2提供光源，以使所述主显示区11与所述功能附加区12共同显示画面,从而进入全屏显示状态。\n\n[0115]在一实施方式中，如图12和图13所示，所述背光模块20包括依次设置的反射片24、导光板25以及扩散片26。\n\n[0116]需要说明的是，所述第一光源块41第二光源块42与第一通孔2 3对应设置且位于第一通孔23远离显示单元10的一侧，所述第一光源块41第二光源块42可以为侧入式光源或直下式光源，实际实施中，所述背光模块20还可以包括背框以及胶框等。\n\n[0117]所述第一光源块41第二光源块42可以为侧入式光源时，第一光源块41第二光源块42可以为一个或多个设置于背光模块20侧部的Mini LED灯珠或LED；所述第一光源块41第二光源块42为直下式光源时，第一光源块41第二光源块42可以为多个均匀分布于第一背光区21的Mini LED灯珠或LED。\n\n[0118]所述导光板25设于所述反射片24上；所述扩散片26设于所述导光板25远离所述反射片24的一侧。\n\n[0119]所述导光板25与所述扩散片26的组合，主要是为了将第一光源块41的光扩散至显示单元10，用以提高所述显示单元10的亮度。\n\n[0120]其中，所述上下偏光片17和所述上偏光片16对应于所述功能附加区12的位置处均设有第二通孔70。\n\n[0121]可以理解的是，所述上下偏光片17和上偏光片16分别位于所述第一液晶层151的两侧，其作用是提供线偏振光以及实现所述第一液晶层151显示画面的明暗变化。在所述上下偏光片17和上偏光片16对应所述第一通孔23相应的位置进行挖孔，即设置所述第二通孔70，形成无偏光功能的区域，以保证所述第二液晶层152在透明状态下的透光能力。\n\n[0122]在一实施方式中，所述上偏光片16远离所述液晶层15的一侧上还设置有封装盖板50，所述封装盖板50通过光学胶层60与所述上偏光片16粘结，所述封装盖板50可以为透明玻璃盖板，也可以为透明塑料盖板。\n\n[0123]通过在背光模块20上的第二背光区22进行挖孔，接着在所述透明照射区域223周围设置灯板90以及第二光源块42。并在所述透明照射区域223的下方设置一电子元件30，用以形成完整的显示装置。在显示模式下，所述功能附加区12获得均匀的光源，以实现所述显示装置在显示模式下时功能附加区12能够正常显示，实现真正的的屏占比。在所述电子元件30处于采光模式下，第二光源块42关闭，防止影响所述电子元件30进行采光。\n\n[0124]基于上述显示面板，本实用新型还提供一种显示装置，所述显示装置包括上述实施例一至四中任意一项所述的显示面板。\n\n[0125]其中，所述显示装置还包括电子元件30，所述电子元件30与所述显示面板的功能附加区12对应设置；当开启所述第二光源块 42时，所述电子元件30不工作，所述功能附加区12与所述主显示区11均显示画面；当关闭所述第二光源块42时，所述电子元件30工作，所述功能附加区12不显示画面，所述主显示区11可正常显示画面。\n\n[0126]在一实施方式中，电子元件30位于第一通孔23的外部且位于所述背光模块20远离显示单元10的一侧。\n\n[0127]需要说明的是，所述电子元件30包括摄像头、闪光灯、光线传感器、呼吸灯传感器、距离传感器、指纹扫描仪传感器、麦克风传感器或透明天线传感器中的一种或其组合。\n\n[0128]请参阅图14至图16所示，在一实施方式中，所述第一通孔23 或/和所述第二通孔70呈刘海状、美人尖、水滴状、圆形、三角形、矩形或多边形中的任一种；所述功能附加区12呈刘海状、美人尖、水滴状、圆形、三角形、矩形或多边形中的任一种。\n\n[0129]请参阅图16和图17所示，以电子元件30为摄像头为例，图16 和图17分别为摄像头开启和关闭状态的显示效果俯视图。如图16 所示，摄像头开启时，显示画面消失，呈现透明状态，为其后摄像头提供采光通道。如图17所示，当摄像头关闭时，呈现画面显示状态，此时画面达到全屏幕显示。\n\n[0130]可以理解的是，本实用新型提供的显示装置可以是手机、电脑、电视、车载显示装置等其他具有显示功能的显示装置，本实用新型不作具体的限制。\n\n[0131]本实用新型的有益效果为：通过在与电子元件30相对的区域设置功能附加区12，可以根据需求对功能附加区12进行透明态和画面显示态的切换，可实现在不破坏屏幕完整性，又不引入新的机械结构的前提下，实现全面屏显示效果，同时对为功能附加区1 2提供光照的第二光源块42的位置进行设计，使得功能附加区12在位于显示单元10上任意位置时均具有良好的显示和透光功能。\n\n[0132]综上所述，虽然本实用新型已以优选实施例揭露如上，但上述优选实施例并非用以限制本实用新型，本领域的普通技术人员，在不脱离本实用新型的精神和范围内，均可作各种更动与润饰，因此本实用新型的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (11007, 24061, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种彩膜基板和显示面板。\n\n背景技术\n\n[0002]随着全面屏的普及和消费者对机身一体化的追求，屏下传感技术成为中小尺寸显示领域开发重点。由于LCD屏属于整面背光的被动发光，光学式传感器与光学显示无法在空间上重合，因此限制了LCD屏向全面屏的方向发展。\n\n[0003]而OLED屏则是采用逐颗的OLED像素主动发光，相较LCD屏而言一方面具有高对比、轻薄、可弯曲、可折叠等优势，另一方面，基于OLED屏无需背光的特性，可以很好的与现行的光学传感器兼容，因而面内光学传感技术已成为目前OLED屏的“独有优势”，从而可以使OLED屏在显示模式和成像模式间切换，并且无需现行LCD屏挖孔方案所造成的挖孔区无法显示。\n\n[0004]因此，在日益追求极致全面屏的当下，LCD屏的低成本优势显得岌岌可危，如何使LCD屏能够满足当下对全面屏的极致需求已成为目前亟待解决的问题。\n\n发明内容\n\n[0005]本申请提供一种彩膜基板和显示面板，能够解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。\n\n[0006]为解决上述问题，本申请提供的技术方案如下：\n\n[0007]本申请提供一种彩膜基板，包括第一像素区域和邻近所述第一像素区域的第二像素区域，所述彩膜基板包括：\n\n[0008]基底；\n\n[0009]多个Micro LED发光单元，对应所述第一像素区域设置于所述基底的一侧，其中，多个所述Micro LED发光单元之间设有透光区；\n\n[0010]彩色色阻，对应所述第二像素区域设于所述基底的相对另一侧。\n\n[0011]在本申请的彩膜基板中，所述基底面向所述Micro LED发光单元的一侧设有封装层，所述封装层位于所述第一像素区域和所述第二像素区域内。\n\n[0012]在本申请的彩膜基板中，所述封装层背离所述基底一侧的表面与所述基底之间的距离大于所述Micro LED发光单元背离所述基底一侧的表面与所述基底之间的距离。\n\n[0013]在本申请的彩膜基板中，所述封装层的厚度为3μm-100μm；所述封装层对应所述Micro LED发光单元的部分的厚度为2μm-80μm。\n\n[0014]在本申请的彩膜基板中，所述封装层的透光率大于或等于70％。\n\n[0015]在本申请的彩膜基板中，所述彩膜基板还包括第一驱动电路，所述第一驱动电路对应所述第一像素区域设于所述基底面向所述Micro LED发光单元的一侧，所述Micro LED发光单元与所述第一驱动电路电连接。\n\n[0016]在本申请的彩膜基板中，所述第一驱动电路包括沿横向延伸的扫描线和沿纵向延伸的数据线，相邻两所述扫描线与相邻两所述数据线界定出子像素区域，所述Micro LED发光单元在所述基底上的正投影面积小于所述子像素区域的面积。\n\n[0017]在本申请的彩膜基板中，所述Micro LED发光单元在所述基底上的正投影面积占所述子像素区域面积的10％-50％，所述Micro LED发光单元包括红色发光单元、绿色发光单元以及蓝色发光单元。\n\n[0018]在本申请的彩膜基板中，所述彩色色阻背离所述基底的一侧设有平坦层，所述平坦层位于所述第一像素区域和所述第二像素区域内，所述平坦层背离所述基底一侧的表面为平整面。\n\n[0019]本申请还提供一种显示面板，包括如上所述的彩膜基板。\n\n[0020]本申请的有益效果为：本申请提供的彩膜基板和显示面板，通过将MicroLED(微发光二极管)显示技术与LCD(液晶显示器)显示技术相结合，从而实现LCD极致全面屏显示；并充分利用Micro LED发光单元体积小、可提升面板透过性的优势实现屏内传感集成功能。本申请在显示上实现了Micro LED显示技术与LCD显示技术在横向与纵向空间的无缝衔接，从而解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。\n\n附图说明\n\n[0021]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0022]图1(a)-1(e)为本申请实施例提供的不同类型的彩膜基板的俯视图；\n\n[0023]图2为本申请一种实施例提供的彩膜基板的截面示意图；\n\n[0024]图3为本申请实施例提供的彩膜基板具有Micro LED发光单元的示意图；\n\n[0025]图4为本申请实施例提供的彩膜基板的第一种制备方法流程图；\n\n[0026]图5(a)-5(d)为本申请彩膜基板的第一种制备方法流程示意图；\n\n[0027]图6为本申请实施例提供的彩膜基板的第二种制备方法流程图；\n\n[0028]图7(a)-7(b)为本申请彩膜基板的第二种制备方法流程示意图；\n\n[0029]图8为本申请实施例提供的显示面板的结构示意图；\n\n[0030]图9为本申请实施例提供的显示装置的结构示意图。\n\n具体实施方式\n\n[0031]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0032]在本申请的描述中，需要理解的是，术语“纵向”、“横向”、“长度”、“宽度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。在本申请中，“/”表示“或者”的意思。\n\n[0033]本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。\n\n[0034]在中小尺寸显示领域，全面屏技术成为当前的重点研发方向目前主流的显示技术包括液晶显示器(Liquid Crystal Display,LCD)和有机发光二极管(Organic Light-Emitting Diode,OLED)，其中LCD为被动发光技术，通过整面背光结构照射液晶盒实现光纤的亮暗控制，而OLED技术则是采用逐颗的OLED像素主动发光。因为相较而言具有高对比、轻薄、可弯曲、可折叠等优势，以及可以很好的与现行的光学指纹识别模组等兼容，因而面内光学传感技术已成为目前OLED屏的“独有优势”。而LCD屏的低成本优势显得岌岌可危。\n\n[0035]基于此，本申请的首要目的在于提供一种彩膜基板及其制备方法、显示面板及显示装置，用以解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。\n\n[0036]另外，Micro LED(微发光二极管)相较于OLED技术具有相似的主动发光特性，同时由于无机LED本身的稳定性与高效率等特点，在技术上较OLED具有寿命长、亮度高、控制芯片(chip)尺寸小、响应时间长等优势。但是相较于传统面板技术通过刻蚀等“减法制造”方式，Micro LED主要依赖于巨量转移(mass-transfer)的“加法制造”方式，在技术成熟度上较低，特别是面临巨量显示画素转移时具有先天的制程良率与成本挑战的问题。\n\n[0037]基于此，本申请的另一目的在于提供一种彩膜基板及其制备方法、显示面板及显示装置，以解决Micro LED应用于显示技术时由于巨量转移而导致制程良率低及成本高从而限制了Micro LED在显示技术上应用的问题。\n\n[0038]以下请结合具体实施例对本申请的彩膜基板及其制备方法、显示面板及显示装置进行详细描述。\n\n[0039]请参照图1(a)-1(e)所示，为本申请实施例提供的不同类型的彩膜基板的俯视图。本申请的彩膜基板包括第一像素区域100和邻近所述第一像素区域100的第二像素区域200，其中，所述第一像素区域100为Micro LED显示区域，所述第二像素区域200为液晶显示区域。所述第一像素区域100与所述第二像素区域200无缝衔接，因而在视觉上没有任何显示中断及不连续边界，因此，可以实现完全的全面屏设计。又由于Micro LED具有高亮、长寿命特征，故可以采用所述第一像素区域100内的部分Micro LED发光单元兼做补光灯、指示灯等功能。\n\n[0040]请结合图1(a)-1(e)以及图2所示，本申请的彩膜基板包括：基底10，所述基底10位于所述第一像素区域100和所述第二像素区域200内；多个Micro LED发光单元30，对应所述第一像素区域100设置于所述基底10的一侧，其中，多个所述Micro LED发光单元30之间设有透光区；彩色色阻50，对应所述第二像素区域200设于所述基底10的相对另一侧。\n\n[0041]由于本申请的彩膜基板采用微发光二极管显示技术与液晶显示技术相结合的形式，从而可以实现LCD极致全面屏显示。又由于彩膜基板在相邻两所述Micro LED发光单元30之间设有透光区，所述透光区可以允许光线穿过，因此可以在所述第一像素区域100内实现屏内传感集成方案。另外，本申请通过将所述Micro LED发光单元30集成于彩膜基板的表面(on cell)，因此可免除外挂式Micro LED显示玻璃导致的液晶面板和Micro LED显示玻璃额外对组制程，并且还可以缓解采用外挂式Micro LED显示玻璃导致的画面悬浮问题，本申请可实现将Micro LED显示方案集成于面板上。\n\n[0042]请参照图2所示，以下对本申请一种实施例提供的彩膜基板进行详细说明。所述彩膜基板包括：基底10，所述基底10可以为透光率较高的玻璃基板，或是柔性基板；第一驱动电路20，所述第一驱动电路20对应所述第一像素区域100设于所述基底10的第一表面10a上，第一驱动电路20用于为Micro LED发光单元30提供驱动信号，以使所述Micro LED发光单元30能够发光；多个Micro LED发光单元30对应所述第一像素区域100设置于所述基底10的第一表面10a一侧，且所述Micro LED发光单元30与所述第一驱动电路20电连接；封装层40设置于所述Micro LED发光单元30以及所述基底10上，用于封装所述Micro LED发光单元30；彩色色阻50对应所述第二像素区域200设于所述基底10的第二表面10b上，且相邻两所述彩色色阻50之间设置有黑色矩阵60；其中，所述彩色色阻50以及所述黑色矩阵60避开所述第一像素区域100设置。\n\n[0043]其中，所述第一驱动电路20包括沿横向延伸的扫描线(未图示)和沿纵向延伸的数据线(未图示)，相邻两所述扫描线与相邻两所述数据线界定出子像素区域。所述扫描线与所述数据线也可以延伸至所述第二像素区域200内，可以理解的是，为了不影响所述第二像素区域200内的像素显示，延伸至所述第二像素区域200内的所述扫描线以及所述数据线的部分避开所述彩色色阻50设置，即可以对应位于所述黑色矩阵60的位置。\n\n[0044]在一种实施例中，所述第一驱动电路20可以采用主动阵列(AM)驱动技术，即所述第一驱动电路20还包括薄膜晶体管(未图示)，每一所述Micro LED发光单元30通过对应的所述薄膜晶体管分别与对应的所述扫描线和对应的所述数据线电连接。\n\n[0045]在本实施例中，为优先保证所述第一像素区域100的穿透率，所述第一驱动电路20采用被动阵列(PM)驱动技术，即所述第一驱动电路20不设置薄膜晶体管。\n\n[0046]在本实施例中，所述Micro LED发光单元30为三色显示，即所述Micro LED发光单元30包括红色发光单元、绿色发光单元以及蓝色发光单元。所述MicroLED发光单元30的尺寸为1μm-100μm，所述Micro LED发光单元30的高度为1μm-20μm。其中，所述Micro LED发光单元30可以为基底面出射结构或者电极面出射结构，此处不做限制。\n\n[0047]在另一种实施例中，所述Micro LED发光单元30采用蓝色显示结合色转换技术方案，也就是说，所述红色发光单元包括蓝色发光单元以及设于所述蓝色发光单元上的色转换层，该色转换层可将所述蓝色发光单元发出的蓝光转换为红光；所述绿色发光单元包括蓝色发光单元以及设于所述蓝色发光单元上的色转换层，该色转换层可将所述蓝色发光单元发出的蓝光转换为绿光。其中，所述色转换层为量子点膜或荧光粉等，此处不做特殊限定。\n\n[0048]结合图3所示，为本申请实施例提供的彩膜基板具有Micro LED发光单元的示意图。由于所述Micro LED发光单元30具有尺寸小的优势，因此所述MicroLED发光单元30在所述基底上的正投影面积小于所述子像素区域P的面积，使得多个所述Micro LED发光单元30之间具有透光区300。\n\n[0049]进一步的，所述Micro LED发光单元30在所述基底上的正投影面积占所述子像素区域P面积的10％-50％。\n\n[0050]在所述第一像素区域100可以实现正常显示的情况下，又由于各所述MicroLED发光单元30的覆盖面积皆小于各子像素区域P的面积，因此，在所述子像素区域P内无所述Micro LED发光单元30覆盖的区域光线可以正常透过。可以通过对所述Micro LED发光单元30关闭，使所述第一像素区域100采集外界图像进入屏下传感器。如此一来，便可实现屏下指纹识别、屏下摄像头、屏下面部识别、屏下距离感知等各种屏下传感方案。\n\n[0051]请参照图2所示，所述封装层40整面的设置于所述第一像素区域100和所述第二像素区域200内，所述封装层40可以为层叠的无机层和有机层，此处不做限制。所述封装层40的材料具有良好的耐高温性能以及良好的透光性。所述封装层40一方面用于对所述MicroLED发光单元30及所述第一驱动电路20进行保护和封装，避免外界水汽等进入彩膜基板内部对器件造成损伤；另一方面用于对形成有所述Micro LED发光单元30的所述基底表面进行平整化。所述封装层40的厚度为3μm-200μm，能够填平由于绑定所述Micro LED发光单元30而在基底上形成的段差。即所述封装层40背离所述基底10一侧的表面与所述基底10之间的距离大于所述Micro LED发光单元30背离所述基底10一侧的表面与所述基底10之间的距离。\n\n[0052]进一步的，由于所述Micro LED发光单元30的高度通常为1μm-20μm，为保证彩膜基板的轻薄化，同时兼顾封装及平坦作用，所述封装层40的厚度可以为3μm-100μm。\n\n[0053]其中，所述封装层40对应所述Micro LED发光单元30的部分的厚度小于所述封装层40对应所述Micro LED发光单元30之外的部分的厚度。\n\n[0054]进一步的，所述封装层40对应所述Micro LED发光单元30的部分的厚度为2μm-80μm。因此，能够保证所述封装层40完全覆盖所述Micro LED发光单元30，以保证其良好的封装性能。\n\n[0055]其中，所述封装层40背离所述基底10一侧的表面为平整面，因此所述封装层40的设置还有效的解决了所述Micro LED发光单元30绑定工艺中造成的较大段差。\n\n[0056]为了不影响所述第一像素区域100的透光性能，所述封装层40的透光率大于或等于70％。\n\n[0057]进一步的，所述封装层40的透光率大于或等于85％。\n\n[0058]在一种实施例中，所述彩色色阻50背离所述基底10的一侧设有平坦层(未图示)，所述平坦层位于所述第一像素区域100和所述第二像素区域200内，所述平坦层背离所述基底10一侧的表面为平整面，如此一来，所述平坦层可以对所述基底设置有所述彩色色阻50一侧的表面进行平整化。\n\n[0059]在本实施例中，所述封装层40背向所述基底10一侧还设置有保护层，所述保护层用于保护所述封装层40不受损伤。\n\n[0060]由于本申请的彩膜基板只在所述第一像素区域100内设置所述Micro LED发光单元30，而所述第一像素区域100的面积占比较小，因此无需依赖巨量转移的方式。如此一来，即可以实现Micro LED显示技术在显示面板/显示装置上的应用，又可以解决巨量显示画素转移时制程良率较低以及成本较高的问题。\n\n[0061]在Micro LED显示技术应用于显示面板上时，由于在制备Micro LED的驱动电路以及绑定Micro LED发光单元的工艺都是需要在高温下进行的，高温会对显示面板上的元器件等造成一定的不良影响；尤其是Micro LED发光单元及其驱动电路制作在彩膜基板上时，制程的高温会影响彩膜基板上彩色色阻材料的特性，从而影响显示效果。\n\n[0062]基于此，本申请的又一目的在于提供一种彩膜基板的制备方法，以解决Micro LED发光单元及其驱动电路制作在彩膜基板上时，高温制程影响彩色色阻材料特性的问题。\n\n[0063]请参照图4所示，为本申请一种实施例提供的彩膜基板的制备方法流程图。所述方法包括以下步骤：\n\n[0064]步骤S1，请参照图5(a)所示，在基底10的第一表面10a上对应第一像素区域100的位置制备第一驱动电路20以及与所述第一驱动电路20电连接的第一焊接电极20a，所述第一驱动电路20包括沿横向延伸的扫描线和沿纵向延伸的数据线，所述第一焊接电极20a位于相邻两所述扫描线与相邻两所述数据线界定出的子像素区域内。\n\n[0065]其中，所述第一焊接电极20a包括一个N电极以及一个与N电极相对设置的P电极。\n\n[0066]步骤S2，请参照图5(b)所示，将Micro LED发光单元30转印于所述基底10的第一像素区域100内，且将所述Micro LED发光单元30上的第二焊接电极30a与所述第一焊接电极20a电性绑定。\n\n[0067]其中，所述第二焊接电极30a包括一个N电极以及一个与N电极相对设置的P电极，在绑定工艺中，所述Micro LED发光单元30的N电极与所述基底10上的N电极电连接，所述Micro LED发光单元30的P电极与所述基底10上的P电极电连接。\n\n[0068]步骤S3，请参照图5(c)所示，在所述Micro LED发光单元30以及所述基底10上制备封装层40。\n\n[0069]其中，所述封装层40能够填平所述Micro LED发光单元30与所述基底10形成的段差，且所述封装层40背离所述基底10的表面形成平整面。\n\n[0070]步骤S4，请参照图5(d)所示，在所述基底10的第二表面10b上制备彩色色阻50，所述彩色色阻50形成于邻近所述第一像素区域100的第二像素区域200内。\n\n[0071]其中，所述制备方法还包括在所述第二像素区域200内制备黑色矩阵60，所述黑色矩阵60位于相邻两所述彩色色阻50之间。所述彩色色阻50与所述黑色矩阵60制备的先后顺序此处不做限制。\n\n[0072]在另一种实施例中，在所述步骤S2之后，所述制备方法还包括以下步骤：\n\n[0073]在所述Micro LED发光单元上制备色转换薄膜，去除对应所述Micro LED发光单元之外的所述色转换薄膜，以形成正对所述Micro LED发光单元的色换换层。\n\n[0074]由于本申请的彩膜基板是先在基底上制备第一驱动电路以及绑定MicroLED发光单元，之后再制作彩色色阻及黑色矩阵，因此，可以保证第一驱动电路制作工艺以及MicroLED发光单元绑定工艺中的高温制程不影响彩色色阻材料特性。\n\n[0075]在本申请的另一种实施例中，还提供了一种彩膜基板的制备方法，如图6所示，与上述彩膜基板的制备方法的区别仅在于步骤S2，本实施例的步骤S2中又包括两个步骤，具体如下：\n\n[0076]步骤S21，请参照图7(a)所示，以Micro LED发光单元30具有电性接触区的表面30b背离所述基底10的方式将所述Micro LED发光单元30转印于所述基底10的第一像素区域100内。\n\n[0077]步骤S22，请参照图7(b)所示，在所述Micro LED发光单元30上制备导电薄膜，并对所述导电薄膜进行图案化，以形成电性连接所述Micro LED发光单元30的电性接触区与所述第一焊接电极20a的导电电极400。\n\n[0078]其中，所述电性接触区包括相对设置的N接触区和P接触区，一个所述导电电极400将N接触区与基底10上的N电极电连接，一个所述导电电极400将P接触区与基底10上的P电极电连接。\n\n[0079]由于本实施例的彩膜基板是先在基底上制备第一驱动电路以及绑定MicroLED发光单元，之后再制作彩色色阻及黑色矩阵，因此，可以保证第一驱动电路制作工艺以及Micro LED发光单元绑定工艺中的高温制程不影响彩色色阻材料特性。另外，又由于本实施例在Micro LED发光单元绑定工艺中，Micro LED发光单元无需设置传统的焊接电极，因此，可以减小Micro LED发光单元绑定后的高度。\n\n[0080]本申请还提供一种显示面板，如图8所示，所述显示面板包括如上所述的彩膜基板1，和阵列基板2，以及位于所述彩膜基板1与所述阵列基板2之间的液晶层3。其中，所述阵列基板2上设置有第二驱动电路21，所述第二驱动电路21设置于第二显示区域200内。由于对应显示面板的第一像素区域100内不设置所述第二驱动电路21，因此不会影响所述第一像素区域100的透光性。\n\n[0081]本申请还提供一种显示装置，如图9所示，所述显示装置包括如上所述的显示面板，以及背光模组4和传感器组件5。所述背光模组4对应第一像素区域100设有通孔41，所述传感器组件5正对所述通孔41设置。\n\n[0082]其中，所述传感器组件5为光学式传感器，可以实现面部识别、距离感应、指纹识别等，此处不做限制。\n\n[0083]综上所述，本申请提供的彩膜基板及其制备方法、显示面板、显示装置，通过采用微发光二极管显示技术与液晶显示技术相结合的形式，从而可以实现LCD极致全面屏显示。又由于彩膜基板在相邻两所述Micro LED发光单元之间设有透光区，所述透光区可以允许光线穿过，因此可以实现屏内传感集成方案。另外，由于本申请的彩膜基板是先在基底上制备第一驱动电路以及绑定MicroLED发光单元，之后再制作彩色色阻及黑色矩阵，因此，可以保证第一驱动电路制作工艺以及Micro LED发光单元绑定工艺中的高温制程不影响彩色色阻材料特性。\n\n[0084]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种彩膜基板和显示面板。\n\n背景技术\n\n[0002]随着全面屏的普及和消费者对机身一体化的追求，屏下传感技术成为中小尺寸显示领域开发重点。由于LCD屏属于整面背光的被动发光，光学式传感器与光学显示无法在空间上重合，因此限制了LCD屏向全面屏的方向发展。\n\n[0003]而OLED屏则是采用逐颗的OLED像素主动发光，相较LCD屏而言一方面具有高对比、轻薄、可弯曲、可折叠等优势，另一方面，基于OLED屏无需背光的特性，可以很好的与现行的光学传感器兼容，因而面内光学传感技术已成为目前OLED屏的“独有优势”，从而可以使OLED屏在显示模式和成像模式间切换，并且无需现行LCD屏挖孔方案所造成的挖孔区无法显示。\n\n[0004]因此，在日益追求极致全面屏的当下，LCD屏的低成本优势显得岌岌可危，如何使LCD屏能够满足当下对全面屏的极致需求已成为目前亟待解决的问题。\n\n发明内容\n\n[0005]本申请提供一种彩膜基板和显示面板，能够解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。\n\n[0006]为解决上述问题，本申请提供的技术方案如下：\n\n[0007]本申请提供一种彩膜基板，包括第一像素区域和邻近所述第一像素区域的第二像素区域，所述彩膜基板包括：\n\n[0008]基底；\n\n[0009]多个Micro LED发光单元，对应所述第一像素区域设置于所述基底的一侧，其中，多个所述Micro LED发光单元之间设有透光区；\n\n[0010]彩色色阻，对应所述第二像素区域设于所述基底的相对另一侧。\n\n[0011]在本申请的彩膜基板中，所述基底面向所述Micro LED发光单元的一侧设有封装层，所述封装层位于所述第一像素区域和所述第二像素区域内。\n\n[0012]在本申请的彩膜基板中，所述封装层背离所述基底一侧的表面与所述基底之间的距离大于所述Micro LED发光单元背离所述基底一侧的表面与所述基底之间的距离。\n\n[0013]在本申请的彩膜基板中，所述封装层的厚度为3μm-100μm；所述封装层对应所述Micro LED发光单元的部分的厚度为2μm-80μm。\n\n[0014]在本申请的彩膜基板中，所述封装层的透光率大于或等于70％。\n\n[0015]在本申请的彩膜基板中，所述彩膜基板还包括第一驱动电路，所述第一驱动电路对应所述第一像素区域设于所述基底面向所述Micro LED发光单元的一侧，所述Micro LED发光单元与所述第一驱动电路电连接。\n\n[0016]在本申请的彩膜基板中，所述第一驱动电路包括沿横向延伸的扫描线和沿纵向延伸的数据线，相邻两所述扫描线与相邻两所述数据线界定出子像素区域，所述Micro LED发光单元在所述基底上的正投影面积小于所述子像素区域的面积。\n\n[0017]在本申请的彩膜基板中，所述Micro LED发光单元在所述基底上的正投影面积占所述子像素区域面积的10％-50％，所述Micro LED发光单元包括红色发光单元、绿色发光单元以及蓝色发光单元。\n\n[0018]在本申请的彩膜基板中，所述彩色色阻背离所述基底的一侧设有平坦层，所述平坦层位于所述第一像素区域和所述第二像素区域内，所述平坦层背离所述基底一侧的表面为平整面。\n\n[0019]本申请还提供一种显示面板，包括如上所述的彩膜基板。\n\n[0020]本申请的有益效果为：本申请提供的彩膜基板和显示面板，通过将MicroLED(微发光二极管)显示技术与LCD(液晶显示器)显示技术相结合，从而实现LCD极致全面屏显示；并充分利用Micro LED发光单元体积小、可提升面板透过性的优势实现屏内传感集成功能。本申请在显示上实现了Micro LED显示技术与LCD显示技术在横向与纵向空间的无缝衔接，从而解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。\n\n附图说明\n\n[0021]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0022]图1(a)-1(e)为本申请实施例提供的不同类型的彩膜基板的俯视图；\n\n[0023]图2为本申请一种实施例提供的彩膜基板的截面示意图；\n\n[0024]图3为本申请实施例提供的彩膜基板具有Micro LED发光单元的示意图；\n\n[0025]图4为本申请实施例提供的彩膜基板的第一种制备方法流程图；\n\n[0026]图5(a)-5(d)为本申请彩膜基板的第一种制备方法流程示意图；\n\n[0027]图6为本申请实施例提供的彩膜基板的第二种制备方法流程图；\n\n[0028]图7(a)-7(b)为本申请彩膜基板的第二种制备方法流程示意图；\n\n[0029]图8为本申请实施例提供的显示面板的结构示意图；\n\n[0030]图9为本申请实施例提供的显示装置的结构示意图。\n\n具体实施方式\n\n[0031]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0032]在本申请的描述中，需要理解的是，术语“纵向”、“横向”、“长度”、“宽度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。在本申请中，“/”表示“或者”的意思。\n\n[0033]本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。\n\n[0034]在中小尺寸显示领域，全面屏技术成为当前的重点研发方向目前主流的显示技术包括液晶显示器(Liquid Crystal Display,LCD)和有机发光二极管(Organic Light-Emitting Diode,OLED)，其中LCD为被动发光技术，通过整面背光结构照射液晶盒实现光纤的亮暗控制，而OLED技术则是采用逐颗的OLED像素主动发光。因为相较而言具有高对比、轻薄、可弯曲、可折叠等优势，以及可以很好的与现行的光学指纹识别模组等兼容，因而面内光学传感技术已成为目前OLED屏的“独有优势”。而LCD屏的低成本优势显得岌岌可危。\n\n[0035]基于此，本申请的首要目的在于提供一种彩膜基板及其制备方法、显示面板及显示装置，用以解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。\n\n[0036]另外，Micro LED(微发光二极管)相较于OLED技术具有相似的主动发光特性，同时由于无机LED本身的稳定性与高效率等特点，在技术上较OLED具有寿命长、亮度高、控制芯片(chip)尺寸小、响应时间长等优势。但是相较于传统面板技术通过刻蚀等“减法制造”方式，Micro LED主要依赖于巨量转移(mass-transfer)的“加法制造”方式，在技术成熟度上较低，特别是面临巨量显示画素转移时具有先天的制程良率与成本挑战的问题。\n\n[0037]基于此，本申请的另一目的在于提供一种彩膜基板及其制备方法、显示面板及显示装置，以解决Micro LED应用于显示技术时由于巨量转移而导致制程良率低及成本高从而限制了Micro LED在显示技术上应用的问题。\n\n[0038]以下请结合具体实施例对本申请的彩膜基板及其制备方法、显示面板及显示装置进行详细描述。\n\n[0039]请参照图1(a)-1(e)所示，为本申请实施例提供的不同类型的彩膜基板的俯视图。本申请的彩膜基板包括第一像素区域100和邻近所述第一像素区域100的第二像素区域200，其中，所述第一像素区域100为Micro LED显示区域，所述第二像素区域200为液晶显示区域。所述第一像素区域100与所述第二像素区域200无缝衔接，因而在视觉上没有任何显示中断及不连续边界，因此，可以实现完全的全面屏设计。又由于Micro LED具有高亮、长寿命特征，故可以采用所述第一像素区域100内的部分Micro LED发光单元兼做补光灯、指示灯等功能。\n\n[0040]请结合图1(a)-1(e)以及图2所示，本申请的彩膜基板包括：基底10，所述基底10位于所述第一像素区域100和所述第二像素区域200内；多个Micro LED发光单元30，对应所述第一像素区域100设置于所述基底10的一侧，其中，多个所述Micro LED发光单元30之间设有透光区；彩色色阻50，对应所述第二像素区域200设于所述基底10的相对另一侧。\n\n[0041]由于本申请的彩膜基板采用微发光二极管显示技术与液晶显示技术相结合的形式，从而可以实现LCD极致全面屏显示。又由于彩膜基板在相邻两所述Micro LED发光单元30之间设有透光区，所述透光区可以允许光线穿过，因此可以在所述第一像素区域100内实现屏内传感集成方案。另外，本申请通过将所述Micro LED发光单元30集成于彩膜基板的表面(on cell)，因此可免除外挂式Micro LED显示玻璃导致的液晶面板和Micro LED显示玻璃额外对组制程，并且还可以缓解采用外挂式Micro LED显示玻璃导致的画面悬浮问题，本申请可实现将Micro LED显示方案集成于面板上。\n\n[0042]请参照图2所示，以下对本申请一种实施例提供的彩膜基板进行详细说明。所述彩膜基板包括：基底10，所述基底10可以为透光率较高的玻璃基板，或是柔性基板；第一驱动电路20，所述第一驱动电路20对应所述第一像素区域100设于所述基底10的第一表面10a上，第一驱动电路20用于为Micro LED发光单元30提供驱动信号，以使所述Micro LED发光单元30能够发光；多个Micro LED发光单元30对应所述第一像素区域100设置于所述基底10的第一表面10a一侧，且所述Micro LED发光单元30与所述第一驱动电路20电连接；封装层40设置于所述Micro LED发光单元30以及所述基底10上，用于封装所述Micro LED发光单元30；彩色色阻50对应所述第二像素区域200设于所述基底10的第二表面10b上，且相邻两所述彩色色阻50之间设置有黑色矩阵60；其中，所述彩色色阻50以及所述黑色矩阵60避开所述第一像素区域100设置。\n\n[0043]其中，所述第一驱动电路20包括沿横向延伸的扫描线(未图示)和沿纵向延伸的数据线(未图示)，相邻两所述扫描线与相邻两所述数据线界定出子像素区域。所述扫描线与所述数据线也可以延伸至所述第二像素区域200内，可以理解的是，为了不影响所述第二像素区域200内的像素显示，延伸至所述第二像素区域200内的所述扫描线以及所述数据线的部分避开所述彩色色阻50设置，即可以对应位于所述黑色矩阵60的位置。\n\n[0044]在一种实施例中，所述第一驱动电路20可以采用主动阵列(AM)驱动技术，即所述第一驱动电路20还包括薄膜晶体管(未图示)，每一所述Micro LED发光单元30通过对应的所述薄膜晶体管分别与对应的所述扫描线和对应的所述数据线电连接。\n\n[0045]在本实施例中，为优先保证所述第一像素区域100的穿透率，所述第一驱动电路20采用被动阵列(PM)驱动技术，即所述第一驱动电路20不设置薄膜晶体管。\n\n[0046]在本实施例中，所述Micro LED发光单元30为三色显示，即所述Micro LED发光单元30包括红色发光单元、绿色发光单元以及蓝色发光单元。所述MicroLED发光单元30的尺寸为1μm-100μm，所述Micro LED发光单元30的高度为1μm-20μm。其中，所述Micro LED发光单元30可以为基底面出射结构或者电极面出射结构，此处不做限制。\n\n[0047]在另一种实施例中，所述Micro LED发光单元30采用蓝色显示结合色转换技术方案，也就是说，所述红色发光单元包括蓝色发光单元以及设于所述蓝色发光单元上的色转换层，该色转换层可将所述蓝色发光单元发出的蓝光转换为红光；所述绿色发光单元包括蓝色发光单元以及设于所述蓝色发光单元上的色转换层，该色转换层可将所述蓝色发光单元发出的蓝光转换为绿光。其中，所述色转换层为量子点膜或荧光粉等，此处不做特殊限定。\n\n[0048]结合图3所示，为本申请实施例提供的彩膜基板具有Micro LED发光单元的示意图。由于所述Micro LED发光单元30具有尺寸小的优势，因此所述MicroLED发光单元30在所述基底上的正投影面积小于所述子像素区域P的面积，使得多个所述Micro LED发光单元30之间具有透光区300。\n\n[0049]进一步的，所述Micro LED发光单元30在所述基底上的正投影面积占所述子像素区域P面积的10％-50％。\n\n[0050]在所述第一像素区域100可以实现正常显示的情况下，又由于各所述MicroLED发光单元30的覆盖面积皆小于各子像素区域P的面积，因此，在所述子像素区域P内无所述Micro LED发光单元30覆盖的区域光线可以正常透过。可以通过对所述Micro LED发光单元30关闭，使所述第一像素区域100采集外界图像进入屏下传感器。如此一来，便可实现屏下指纹识别、屏下摄像头、屏下面部识别、屏下距离感知等各种屏下传感方案。\n\n[0051]请参照图2所示，所述封装层40整面的设置于所述第一像素区域100和所述第二像素区域200内，所述封装层40可以为层叠的无机层和有机层，此处不做限制。所述封装层40的材料具有良好的耐高温性能以及良好的透光性。所述封装层40一方面用于对所述MicroLED发光单元30及所述第一驱动电路20进行保护和封装，避免外界水汽等进入彩膜基板内部对器件造成损伤；另一方面用于对形成有所述Micro LED发光单元30的所述基底表面进行平整化。所述封装层40的厚度为3μm-200μm，能够填平由于绑定所述Micro LED发光单元30而在基底上形成的段差。即所述封装层40背离所述基底10一侧的表面与所述基底10之间的距离大于所述Micro LED发光单元30背离所述基底10一侧的表面与所述基底10之间的距离。\n\n[0052]进一步的，由于所述Micro LED发光单元30的高度通常为1μm-20μm，为保证彩膜基板的轻薄化，同时兼顾封装及平坦作用，所述封装层40的厚度可以为3μm-100μm。\n\n[0053]其中，所述封装层40对应所述Micro LED发光单元30的部分的厚度小于所述封装层40对应所述Micro LED发光单元30之外的部分的厚度。\n\n[0054]进一步的，所述封装层40对应所述Micro LED发光单元30的部分的厚度为2μm-80μm。因此，能够保证所述封装层40完全覆盖所述Micro LED发光单元30，以保证其良好的封装性能。\n\n[0055]其中，所述封装层40背离所述基底10一侧的表面为平整面，因此所述封装层40的设置还有效的解决了所述Micro LED发光单元30绑定工艺中造成的较大段差。\n\n[0056]为了不影响所述第一像素区域100的透光性能，所述封装层40的透光率大于或等于70％。\n\n[0057]进一步的，所述封装层40的透光率大于或等于85％。\n\n[0058]在一种实施例中，所述彩色色阻50背离所述基底10的一侧设有平坦层(未图示)，所述平坦层位于所述第一像素区域100和所述第二像素区域200内，所述平坦层背离所述基底10一侧的表面为平整面，如此一来，所述平坦层可以对所述基底设置有所述彩色色阻50一侧的表面进行平整化。\n\n[0059]在本实施例中，所述封装层40背向所述基底10一侧还设置有保护层，所述保护层用于保护所述封装层40不受损伤。\n\n[0060]由于本申请的彩膜基板只在所述第一像素区域100内设置所述Micro LED发光单元30，而所述第一像素区域100的面积占比较小，因此无需依赖巨量转移的方式。如此一来，即可以实现Micro LED显示技术在显示面板/显示装置上的应用，又可以解决巨量显示画素转移时制程良率较低以及成本较高的问题。\n\n[0061]在Micro LED显示技术应用于显示面板上时，由于在制备Micro LED的驱动电路以及绑定Micro LED发光单元的工艺都是需要在高温下进行的，高温会对显示面板上的元器件等造成一定的不良影响；尤其是Micro LED发光单元及其驱动电路制作在彩膜基板上时，制程的高温会影响彩膜基板上彩色色阻材料的特性，从而影响显示效果。\n\n[0062]基于此，本申请的又一目的在于提供一种彩膜基板的制备方法，以解决Micro LED发光单元及其驱动电路制作在彩膜基板上时，高温制程影响彩色色阻材料特性的问题。\n\n[0063]请参照图4所示，为本申请一种实施例提供的彩膜基板的制备方法流程图。所述方法包括以下步骤：\n\n[0064]步骤S1，请参照图5(a)所示，在基底10的第一表面10a上对应第一像素区域100的位置制备第一驱动电路20以及与所述第一驱动电路20电连接的第一焊接电极20a，所述第一驱动电路20包括沿横向延伸的扫描线和沿纵向延伸的数据线，所述第一焊接电极20a位于相邻两所述扫描线与相邻两所述数据线界定出的子像素区域内。\n\n[0065]其中，所述第一焊接电极20a包括一个N电极以及一个与N电极相对设置的P电极。\n\n[0066]步骤S2，请参照图5(b)所示，将Micro LED发光单元30转印于所述基底10的第一像素区域100内，且将所述Micro LED发光单元30上的第二焊接电极30a与所述第一焊接电极20a电性绑定。\n\n[0067]其中，所述第二焊接电极30a包括一个N电极以及一个与N电极相对设置的P电极，在绑定工艺中，所述Micro LED发光单元30的N电极与所述基底10上的N电极电连接，所述Micro LED发光单元30的P电极与所述基底10上的P电极电连接。\n\n[0068]步骤S3，请参照图5(c)所示，在所述Micro LED发光单元30以及所述基底10上制备封装层40。\n\n[0069]其中，所述封装层40能够填平所述Micro LED发光单元30与所述基底10形成的段差，且所述封装层40背离所述基底10的表面形成平整面。\n\n[0070]步骤S4，请参照图5(d)所示，在所述基底10的第二表面10b上制备彩色色阻50，所述彩色色阻50形成于邻近所述第一像素区域100的第二像素区域200内。\n\n[0071]其中，所述制备方法还包括在所述第二像素区域200内制备黑色矩阵60，所述黑色矩阵60位于相邻两所述彩色色阻50之间。所述彩色色阻50与所述黑色矩阵60制备的先后顺序此处不做限制。\n\n[0072]在另一种实施例中，在所述步骤S2之后，所述制备方法还包括以下步骤：\n\n[0073]在所述Micro LED发光单元上制备色转换薄膜，去除对应所述Micro LED发光单元之外的所述色转换薄膜，以形成正对所述Micro LED发光单元的色换换层。\n\n[0074]由于本申请的彩膜基板是先在基底上制备第一驱动电路以及绑定MicroLED发光单元，之后再制作彩色色阻及黑色矩阵，因此，可以保证第一驱动电路制作工艺以及MicroLED发光单元绑定工艺中的高温制程不影响彩色色阻材料特性。\n\n[0075]在本申请的另一种实施例中，还提供了一种彩膜基板的制备方法，如图6所示，与上述彩膜基板的制备方法的区别仅在于步骤S2，本实施例的步骤S2中又包括两个步骤，具体如下：\n\n[0076]步骤S21，请参照图7(a)所示，以Micro LED发光单元30具有电性接触区的表面30b背离所述基底10的方式将所述Micro LED发光单元30转印于所述基底10的第一像素区域100内。\n\n[0077]步骤S22，请参照图7(b)所示，在所述Micro LED发光单元30上制备导电薄膜，并对所述导电薄膜进行图案化，以形成电性连接所述Micro LED发光单元30的电性接触区与所述第一焊接电极20a的导电电极400。\n\n[0078]其中，所述电性接触区包括相对设置的N接触区和P接触区，一个所述导电电极400将N接触区与基底10上的N电极电连接，一个所述导电电极400将P接触区与基底10上的P电极电连接。\n\n[0079]由于本实施例的彩膜基板是先在基底上制备第一驱动电路以及绑定MicroLED发光单元，之后再制作彩色色阻及黑色矩阵，因此，可以保证第一驱动电路制作工艺以及Micro LED发光单元绑定工艺中的高温制程不影响彩色色阻材料特性。另外，又由于本实施例在Micro LED发光单元绑定工艺中，Micro LED发光单元无需设置传统的焊接电极，因此，可以减小Micro LED发光单元绑定后的高度。\n\n[0080]本申请还提供一种显示面板，如图8所示，所述显示面板包括如上所述的彩膜基板1，和阵列基板2，以及位于所述彩膜基板1与所述阵列基板2之间的液晶层3。其中，所述阵列基板2上设置有第二驱动电路21，所述第二驱动电路21设置于第二显示区域200内。由于对应显示面板的第一像素区域100内不设置所述第二驱动电路21，因此不会影响所述第一像素区域100的透光性。\n\n[0081]本申请还提供一种显示装置，如图9所示，所述显示装置包括如上所述的显示面板，以及背光模组4和传感器组件5。所述背光模组4对应第一像素区域100设有通孔41，所述传感器组件5正对所述通孔41设置。\n\n[0082]其中，所述传感器组件5为光学式传感器，可以实现面部识别、距离感应、指纹识别等，此处不做限制。\n\n[0083]综上所述，本申请提供的彩膜基板及其制备方法、显示面板、显示装置，通过采用微发光二极管显示技术与液晶显示技术相结合的形式，从而可以实现LCD极致全面屏显示。又由于彩膜基板在相邻两所述Micro LED发光单元之间设有透光区，所述透光区可以允许光线穿过，因此可以实现屏内传感集成方案。另外，由于本申请的彩膜基板是先在基底上制备第一驱动电路以及绑定MicroLED发光单元，之后再制作彩色色阻及黑色矩阵，因此，可以保证第一驱动电路制作工艺以及Micro LED发光单元绑定工艺中的高温制程不影响彩色色阻材料特性。\n\n[0084]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (11008, 24062, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种彩膜基板、显示面板、显示装置。\n\n背景技术\n\n[0002]随着全面屏的普及和消费者对机身一体化的追求，屏下传感技术成为中小尺寸显示领域开发重点。由于LCD屏属于整面背光的被动发光，光学式传感器与光学显示无法在空间上重合，因此限制了LCD屏向全面屏的方向发展。\n\n[0003]而OLED屏则是采用逐颗的OLED像素主动发光，相较LCD屏而言一方面具有高对比、轻薄、可弯曲、可折叠等优势，另一方面，基于OLED屏无需背光的特性，可以很好的与现行的光学传感器兼容，因而面内光学传感技术已成为目前OLED屏的“独有优势”，从而可以使OLED屏在显示模式和成像模式间切换，并且无需现行LCD屏挖孔方案所造成的挖孔区无法显示。\n\n[0004]因此，在日益追求极致全面屏的当下，LCD屏的低成本优势显得岌岌可危，如何使LCD屏能够满足当下对全面屏的极致需求已成为目前亟待解决的问题。\n\n发明内容\n\n[0005]本申请提供一种彩膜基板、显示面板、显示装置，能够解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。\n\n[0006]为解决上述问题，本申请提供的技术方案如下：\n\n[0007]本申请提供一种彩膜基板，包括第一像素区域和邻近所述第一像素区域的第二像素区域，所述彩膜基板包括：\n\n[0008]基底；\n\n[0009]多个Micro LED发光单元，对应所述第一像素区域设置于所述基底上，其中，多个所述Micro LED发光单元之间设有透光区；\n\n[0010]平坦层，设置于所述Micro LED发光单元以及所述基底上；\n\n[0011]彩色色阻，对应所述第二像素区域设于所述平坦层上。\n\n[0012]在本申请的彩膜基板中，所述平坦层背离所述基底一侧的表面为平整面，所述彩膜基板还包括设于所述彩色色阻以及所述平坦层上的保护层，所述保护层背离所述基底一侧的表面为平整面。\n\n[0013]在本申请的彩膜基板中，所述平坦层包括第一子平坦层和第二子平坦层，所述第一子平坦层填充于相邻两所述Micro LED发光单元之间，所述第二子平坦层设置于所述Micro LED发光单元以及所述第一子平坦层上，所述第二子平坦层背离所述Micro LED发光单元一侧的表面为平整面。\n\n[0014]在本申请的彩膜基板中，所述彩色色阻背离所述基底一侧设有第三子平坦层，所述第三子平坦层背离所述基底一侧的表面为平整面，所述保护层设于所述第三子平坦层表面。\n\n[0015]在本申请的彩膜基板中，所述平坦层的厚度为3μm-100μm。\n\n[0016]在本申请的彩膜基板中，所述平坦层对应所述Micro LED发光单元的部分的厚度小于所述平坦层对应所述Micro LED发光单元之外的部分的厚度。\n\n[0017]在本申请的彩膜基板中，所述平坦层对应所述Micro LED发光单元的部分的厚度为2μm-80μm。\n\n[0018]在本申请的彩膜基板中，所述平坦层的透光率大于或等于70％。\n\n[0019]在本申请的彩膜基板中，所述彩膜基板还包括第一驱动电路，所述第一驱动电路对应所述第一像素区域设于所述基底面向所述Micro LED发光单元的一侧表面，所述MicroLED发光单元与所述第一驱动电路电连接。\n\n[0020]在本申请的彩膜基板中，所述第一驱动电路包括沿横向延伸的扫描线和沿纵向延伸的数据线，相邻两所述扫描线与相邻两所述数据线界定出子像素区域，所述Micro LED发光单元在所述基底上的正投影面积小于所述子像素区域的面积。\n\n[0021]在本申请的彩膜基板中，所述Micro LED发光单元在所述基底上的正投影面积占所述子像素区域面积的10％-50％，所述Micro LED发光单元包括红色发光单元、绿色发光单元以及蓝色发光单元。\n\n[0022]在本申请的彩膜基板中，所述红色发光单元包括蓝色发光单元以及设于所述蓝色发光单元上的色转换层，所述绿色发光单元包括蓝色发光单元以及设于所述蓝色发光单元上的色转换层，所述色转换层为量子点膜或荧光粉。\n\n[0023]在本申请的彩膜基板中，所述第一驱动电路还包括薄膜晶体管，每一所述MicroLED发光单元通过对应的所述薄膜晶体管分别与对应的所述扫描线和对应的所述数据线电连接。\n\n[0024]本申请还提供一种显示面板，包括如上所述的彩膜基板。\n\n[0025]本申请还提供一种显示装置，包括如上所述的彩膜基板。\n\n[0026]本申请的有益效果为：本申请提供的彩膜基板、显示面板、显示装置，通过将MicroLED(微发光二极管)显示技术与LCD(液晶显示器)显示技术相结合，从而实现LCD极致全面屏显示；并充分利用Micro LED发光单元体积小、可提升面板透过性的优势实现屏内传感集成功能。本申请在显示上实现了Micro LED显示技术与LCD显示技术在横向与纵向空间的无缝衔接，从而解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。\n\n附图说明\n\n[0027]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0028]图1(a)-1(e)为本申请实施例提供的不同类型的彩膜基板的俯视图；\n\n[0029]图2为本申请一种实施例提供的彩膜基板的截面示意图；\n\n[0030]图3为本申请实施例提供的彩膜基板具有Micro LED发光单元的示意图；\n\n[0031]图4为本申请另一种实施例提供的彩膜基板的结构示意图；\n\n[0032]图5为本申请又一种实施例提供的彩膜基板的结构示意图；\n\n[0033]图6为本申请实施例提供的彩膜基板的第一种制备方法流程图；\n\n[0034]图7(a)-7(d)为本申请彩膜基板的第一种制备方法流程示意图；\n\n[0035]图8为本申请实施例提供的彩膜基板的第二种制备方法流程图；\n\n[0036]图9(a)-9(b)为本申请彩膜基板的第二种制备方法流程示意图；\n\n[0037]图10为本申请实施例提供的显示面板的结构示意图；\n\n[0038]图11为本申请实施例提供的显示装置的结构示意图。\n\n具体实施方式\n\n[0039]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0040]在本申请的描述中，需要理解的是，术语“纵向”、“横向”、“长度”、“宽度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。在本申请中，“/”表示“或者”的意思。\n\n[0041]本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。\n\n[0042]在中小尺寸显示领域，全面屏技术成为当前的重点研发方向目前主流的显示技术包括液晶显示器(Liquid Crystal Display,LCD)和有机发光二极管(Organic Light-Emitting Diode,OLED)，其中LCD为被动发光技术，通过整面背光结构照射液晶盒实现光纤的亮暗控制，而OLED技术则是采用逐颗的OLED像素主动发光。因为相较而言具有高对比、轻薄、可弯曲、可折叠等优势，以及可以很好的与现行的光学指纹识别模组等兼容，因而面内光学传感技术已成为目前OLED屏的“独有优势”。而LCD屏的低成本优势显得岌岌可危。\n\n[0043]基于此，本申请的首要目的在于提供一种彩膜基板及其制备方法、显示面板及显示装置，用以解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。\n\n[0044]另外，Micro LED(微发光二极管)相较于OLED技术具有相似的主动发光特性，同时由于无机LED本身的稳定性与高效率等特点，在技术上较OLED具有寿命长、亮度高、控制芯片(chip)尺寸小、响应时间长等优势。但是相较于传统面板技术通过刻蚀等“减法制造”方式，Micro LED主要依赖于巨量转移(mass-transfer)的“加法制造”方式，在技术成熟度上较低，特别是面临巨量显示画素转移时具有先天的制程良率与成本挑战的问题。\n\n[0045]基于此，本申请的另一目的在于提供一种彩膜基板及其制备方法、显示面板及显示装置，以解决Micro LED应用于显示技术时由于巨量转移而导致制程良率低及成本高从而限制了Micro LED在显示技术上应用的问题。\n\n[0046]此外，在Micro LED应用于显示技术时，会涉及到Micro LED与基板的绑定(bonding)技术，但是由于Micro LED与基板绑定后整体高度大于中小尺寸LCD的Cell gap(即液晶盒的阵列基板与彩膜基板之间的间隙)，从而难以实现屏内(Incell)Micro LED显示技术的集成。\n\n[0047]基于此，本申请的又一目的在于提供一种彩膜基板及其制备方法、显示面板及显示装置，以解决由于Micro LED与基板的绑定工艺而使屏内(Incell)集成Micro LED显示技术难以实现的问题。\n\n[0048]以下请结合具体实施例对本申请的彩膜基板及其制备方法、显示面板及显示装置进行详细描述。\n\n[0049]请参照图1(a)-1(e)所示，为本申请实施例提供的不同类型的彩膜基板的俯视图。本申请的彩膜基板包括第一像素区域100和邻近所述第一像素区域100的第二像素区域200，其中，所述第一像素区域100为Micro LED显示区域，所述第二像素区域200为液晶显示区域。所述第一像素区域100与所述第二像素区域200无缝衔接，因而在视觉上没有任何显示中断及不连续边界，因此，可以实现完全的全面屏设计。又由于Micro LED具有高亮、长寿命特征，故可以采用所述第一像素区域100内的部分Micro LED发光单元兼做补光灯、指示灯等功能。\n\n[0050]请结合图1(a)-1(e)以及图2所示，本申请的彩膜基板包括：基底10，所述基底10位于所述第一像素区域100和所述第二像素区域200内；多个Micro LED发光单元30，对应所述第一像素区域100设置于所述基底10上，其中，多个所述Micro LED发光单元30之间设有透光区；平坦层40，设置于所述Micro LED发光单元30以及所述基底10上；彩色色阻50，对应所述第二像素区域200设于所述平坦层40上。\n\n[0051]由于本申请的彩膜基板采用微发光二极管显示技术与液晶显示技术相结合的形式，从而可以实现LCD极致全面屏显示。又由于彩膜基板在相邻两所述Micro LED发光单元30之间设有透光区，所述透光区可以允许光线穿过，因此可以在所述第一像素区域100内实现屏内传感集成方案。另外，本申请通过将所述Micro LED发光单元30集成于彩膜基板的内部，并用所述平坦层40进行平整处理，因此Micro LED发光单元的绑定工艺不会对彩膜基板与阵列基板的成盒工艺造成影响，可实现屏内集成Micro LED显示方案。\n\n[0052]请参照图2所示，以下对本申请一种实施例提供的彩膜基板进行详细说明。所述彩膜基板包括：基底10，所述基底10可以为透光率较高的玻璃基板，或是柔性基板；第一驱动电路20，所述第一驱动电路20对应所述第一像素区域100设于所述基底10上，第一驱动电路20用于为Micro LED发光单元30提供驱动信号，以使所述Micro LED发光单元30能够发光；多个Micro LED发光单元30对应所述第一像素区域100设置于所述基底10上，且所述MicroLED发光单元30与所述第一驱动电路20电连接；平坦层40设置于所述Micro LED发光单元30以及所述基底10上，所述平坦层40用于对形成有所述Micro LED发光单元30的所述基底表面进行平整化；彩色色阻50对应所述第二像素区域200设于所述平坦层40上，且相邻两所述彩色色阻50之间设置有黑色矩阵60；所述彩色色阻50与所述黑色矩阵60上还可以设置保护层70，所述保护层70一方面可以平坦彩膜基板的表面，另一方面可以保护其覆盖的膜层不受损伤。\n\n[0053]其中，所述第一驱动电路20包括沿横向延伸的扫描线(未图示)和沿纵向延伸的数据线(未图示)，相邻两所述扫描线与相邻两所述数据线界定出子像素区域。所述扫描线与所述数据线也可以延伸至所述第二像素区域200内，可以理解的是，为了不影响所述第二像素区域200内的像素显示，延伸至所述第二像素区域200内的所述扫描线以及所述数据线的部分避开所述彩色色阻50设置，即可以对应位于所述黑色矩阵60的位置。\n\n[0054]在一种实施例中，所述第一驱动电路20可以采用主动阵列(AM)驱动技术，即所述第一驱动电路20还包括薄膜晶体管(未图示)，每一所述Micro LED发光单元30通过对应的所述薄膜晶体管分别与对应的所述扫描线和对应的所述数据线电连接。\n\n[0055]在本实施例中，为优先保证所述第一像素区域100的穿透率，所述第一驱动电路20采用被动阵列(PM)驱动技术，即所述第一驱动电路20不设置薄膜晶体管。\n\n[0056]在本实施例中，所述Micro LED发光单元30为三色显示，即所述Micro LED发光单元30包括红色发光单元、绿色发光单元以及蓝色发光单元。所述Micro LED发光单元30的尺寸为1μm-100μm，所述Micro LED发光单元30的高度为1μm-20μm。其中，所述Micro LED发光单元30可以为基底面出射结构或者电极面出射结构，此处不做限制。\n\n[0057]在另一种实施例中，所述Micro LED发光单元30采用蓝色显示结合色转换技术方案，也就是说，所述红色发光单元包括蓝色发光单元以及设于所述蓝色发光单元上的色转换层，该色转换层可将所述蓝色发光单元发出的蓝光转换为红光；所述绿色发光单元包括蓝色发光单元以及设于所述蓝色发光单元上的色转换层，该色转换层可将所述蓝色发光单元发出的蓝光转换为绿光。其中，所述色转换层为量子点膜或荧光粉等，此处不做特殊限定。\n\n[0058]结合图3所示，为本申请实施例提供的彩膜基板具有Micro LED发光单元的示意图。由于所述Micro LED发光单元30具有尺寸小的优势，因此所述Micro LED发光单元30在所述基底上的正投影面积小于所述子像素区域P的面积，使得多个所述Micro LED发光单元30之间具有透光区300。\n\n[0059]进一步的，所述Micro LED发光单元30在所述基底上的正投影面积占所述子像素区域P面积的10％-50％。\n\n[0060]在所述第一像素区域100可以实现正常显示的情况下，又由于各所述Micro LED发光单元30的覆盖面积皆小于各子像素区域P的面积，因此，在所述子像素区域P内无所述Micro LED发光单元30覆盖的区域光线可以正常透过。可以通过对所述Micro LED发光单元30关闭，使所述第一像素区域100采集外界图像进入屏下传感器。如此一来，便可实现屏下指纹识别、屏下摄像头、屏下面部识别、屏下距离感知等各种屏下传感方案。\n\n[0061]请参照图2所示，所述平坦层40整面的设置于所述第一像素区域100和所述第二像素区域200内，所述平坦层40的材料包括但不限于有机树脂、OC胶、硅胶等，所述平坦层40的材料具有良好的耐高温性能以及良好的粘着性和透光性。所述平坦层40的厚度为3μm-200μm，能够填平由于绑定所述Micro LED发光单元30而在基底上形成的段差。\n\n[0062]进一步的，由于所述Micro LED发光单元30的高度通常为1μm-20μm，为保证彩膜基板的轻薄化，同时兼顾平坦作用，所述平坦层的厚度可以为3μm-100μm。\n\n[0063]其中，所述平坦层40对应所述Micro LED发光单元30的部分的厚度小于所述平坦层40对应所述Micro LED发光单元30之外的部分的厚度。\n\n[0064]进一步的，所述平坦层40对应所述Micro LED发光单元30的部分的厚度为2μm-80μm。因此，能够保证所述平坦层40完全覆盖所述Micro LED发光单元30。\n\n[0065]其中，所述平坦层40背离所述基底10一侧的表面为平整面，因此所述平坦层40的设置有效的解决了所述Micro LED发光单元30绑定工艺中会产生较大段差而使Micro LED显示技术难以实现屏内(Incell)集成的问题。\n\n[0066]为了不影响所述第一像素区域100的透光性能，所述平坦层40的透光率大于或等于70％。\n\n[0067]进一步的，所述平坦层40的透光率大于或等于85％。\n\n[0068]在本实施例中，所述第一像素区域100内不设置所述彩色色阻50以及所述黑色矩阵60。所述保护层70设置于所述第一像素区域100以及所述第二像素区域200内，其中，所述保护层70背离所述基底10一侧的表面为平整面。如此一来，实现了在彩膜基板内集成MicroLED显示技术，同时又由于彩膜基板用于与阵列基板对位贴合的表面为平整面，因此，本申请Micro LED发光单元30的绑定不会影响中小尺寸LCD的Cell gap。\n\n[0069]在其他实施例中，所述平坦层40可以为多层结构。请参照图4所示，为本申请另一种实施例提供的彩膜基板的结构示意图。图4中的彩膜基板与图2中的彩膜基板的结构相同/相似，区别仅在于：图4中的彩膜基板的所述平坦层40包括第一子平坦层401和第二子平坦层402，所述第一子平坦层401填充于相邻两所述Micro LED发光单元30之间，所述第二子平坦层402设置于所述Micro LED发光单元30以及所述第一子平坦层401上，所述第二子平坦层402背离所述Micro LED发光单元30一侧的表面为平整面。由于所述第一子平坦层401填平了所述Micro LED发光单元30与基底10的段差，如此一来，可进一步保证形成的所述第二子平坦层402的平整性。\n\n[0070]请参照图5所示，为本申请又一种实施例提供的彩膜基板的结构示意图。图5中的彩膜基板与图4中的彩膜基板的结构相同/相似，区别仅在于：图5中的彩膜基板的所述平坦层40还包括第三子平坦层403，所述第三子平坦层403设置于所述彩色色阻50背离所述基底10一侧；其中，所述第三子平坦层403背离所述基底10一侧的表面为平整面，所述保护层70设于所述第三子平坦层403表面。由于所述第三子平坦层403填平了所述彩色色阻50与平坦层40的段差，如此一来，可进一步保证形成的所述保护层70的平整性。\n\n[0071]由于本申请的彩膜基板只在所述第一像素区域100内设置所述Micro LED发光单元30，而所述第一像素区域100的面积占比较小，因此无需依赖巨量转移的方式。如此一来，即可以实现Micro LED显示技术在显示面板/显示装置上的应用，又可以解决巨量显示画素转移时制程良率较低以及成本较高的问题。\n\n[0072]本申请还提供了一种上述彩膜基板的制备方法，请参照图6所示，所述方法包括以下步骤：\n\n[0073]步骤S1，请参照图7(a)所示，在基底10的第一像素区域100制备第一驱动电路20以及与所述第一驱动电路20电连接的第一焊接电极20a，所述第一驱动电路20包括沿横向延伸的扫描线和沿纵向延伸的数据线，所述第一焊接电极20a位于相邻两所述扫描线与相邻两所述数据线界定出的子像素区域内。\n\n[0074]其中，所述第一焊接电极20a包括一个N电极以及一个与N电极相对设置的P电极。\n\n[0075]步骤S2，请参照图7(b)所示，将Micro LED发光单元30转印于所述基底10的第一像素区域100内，且将所述Micro LED发光单元30上的第二焊接电极30a与所述第一焊接电极20a电性绑定。\n\n[0076]其中，所述第二焊接电极30a包括一个N电极以及一个与N电极相对设置的P电极，在绑定工艺中，所述Micro LED发光单元30的N电极与所述基底10上的N电极电连接，所述Micro LED发光单元30的P电极与所述基底10上的P电极电连接。\n\n[0077]步骤S3，请参照图7(c)所示，在所述Micro LED发光单元30以及所述基底10上制备平坦层40。\n\n[0078]其中，所述平坦层40能够填平所述Micro LED发光单元30与所述基底10形成的段差，且所述平坦层40背离所述基底10的表面形成平整面。\n\n[0079]步骤S4，请参照图7(d)所示，在所述平坦层40上制备彩色色阻50，所述彩色色阻50形成于邻近所述第一像素区域100的第二像素区域200内。\n\n[0080]其中，所述制备方法还包括在所述第二像素区域200内制备黑色矩阵60，所述黑色矩阵60位于相邻两所述彩色色阻50之间。所述彩色色阻50与所述黑色矩阵60制备的先后顺序此处不做限制。之后在所述彩色色阻50上制备保护层。\n\n[0081]由于本申请的彩膜基板是先在基底上制备第一驱动电路以及绑定Micro LED发光单元，之后再制作彩色色阻及黑色矩阵，因此，可以保证第一驱动电路制作工艺以及MicroLED发光单元绑定工艺中的高温制程不影响彩色色阻材料特性。\n\n[0082]在本申请的另一种实施例中，还提供了一种彩膜基板的制备方法，如图8所示，与上述彩膜基板的制备方法的区别仅在于步骤S2，本实施例的步骤S2中又包括两个步骤，具体如下：\n\n[0083]步骤S21，请参照图9(a)所示，以Micro LED发光单元30具有电性接触区的表面30b背离所述基底10的方式将所述Micro LED发光单元30转印于所述基底10的第一像素区域100内。\n\n[0084]步骤S22，请参照图9(b)所示，在所述Micro LED发光单元30上制备导电薄膜，并对所述导电薄膜进行图案化，以形成电性连接所述Micro LED发光单元30的电性接触区与所述第一焊接电极20a的导电电极400。\n\n[0085]其中，所述电性接触区包括相对设置的N接触区和P接触区，一个所述导电电极400将N接触区与基底10上的N电极电连接，一个所述导电电极400将P接触区与基底10上的P电极电连接。\n\n[0086]由于本实施例的彩膜基板是先在基底上制备第一驱动电路以及绑定Micro LED发光单元，之后再制作彩色色阻及黑色矩阵，因此，可以保证第一驱动电路制作工艺以及Micro LED发光单元绑定工艺中的高温制程不影响彩色色阻材料特性。另外，又由于本实施例在Micro LED发光单元绑定工艺中，Micro LED发光单元无需设置传统的焊接电极，因此，可以减小Micro LED发光单元绑定后的高度。\n\n[0087]本申请还提供一种显示面板，如图10所示，所述显示面板包括如上所述的彩膜基板1、阵列基板2，以及位于所述彩膜基板1与所述阵列基板2之间的液晶层3。其中，所述阵列基板2上设置有第二驱动电路21，所述第二驱动电路21设置于第二显示区域200内。由于对应显示面板的第一像素区域100内不设置所述第二驱动电路21，因此不会影响所述第一像素区域100的透光性。\n\n[0088]本申请还提供一种显示装置，如图11所示，所述显示装置包括如上所述的显示面板，以及背光模组4和传感器组件5。所述背光模组4对应第一像素区域100设有通孔41，所述传感器组件5正对所述通孔41设置。\n\n[0089]其中，所述传感器组件5为光学式传感器，可以实现面部识别、距离感应、指纹识别等，此处不做限制。\n\n[0090]综上所述，本申请提供的彩膜基板及其制备方法、显示面板、显示装置，通过采用微发光二极管显示技术与液晶显示技术相结合的形式，从而可以实现LCD极致全面屏显示。又由于彩膜基板在相邻两所述Micro LED发光单元之间设有透光区，所述透光区可以允许光线穿过，因此可以实现屏内传感集成方案。另外，本申请通过将所述Micro LED发光单元集成于彩膜基板的内部，并用所述平坦层进行平整处理，因此Micro LED发光单元的绑定工艺不会对彩膜基板与阵列基板的成盒工艺造成影响，可实现屏内集成Micro LED显示方案。\n\n[0091]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种彩膜基板、显示面板、显示装置。\n\n背景技术\n\n[0002]随着全面屏的普及和消费者对机身一体化的追求，屏下传感技术成为中小尺寸显示领域开发重点。由于LCD屏属于整面背光的被动发光，光学式传感器与光学显示无法在空间上重合，因此限制了LCD屏向全面屏的方向发展。\n\n[0003]而OLED屏则是采用逐颗的OLED像素主动发光，相较LCD屏而言一方面具有高对比、轻薄、可弯曲、可折叠等优势，另一方面，基于OLED屏无需背光的特性，可以很好的与现行的光学传感器兼容，因而面内光学传感技术已成为目前OLED屏的“独有优势”，从而可以使OLED屏在显示模式和成像模式间切换，并且无需现行LCD屏挖孔方案所造成的挖孔区无法显示。\n\n[0004]因此，在日益追求极致全面屏的当下，LCD屏的低成本优势显得岌岌可危，如何使LCD屏能够满足当下对全面屏的极致需求已成为目前亟待解决的问题。\n\n发明内容\n\n[0005]本申请提供一种彩膜基板、显示面板、显示装置，能够解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。\n\n[0006]为解决上述问题，本申请提供的技术方案如下：\n\n[0007]本申请提供一种彩膜基板，包括第一像素区域和邻近所述第一像素区域的第二像素区域，所述彩膜基板包括：\n\n[0008]基底；\n\n[0009]多个Micro LED发光单元，对应所述第一像素区域设置于所述基底上，其中，多个所述Micro LED发光单元之间设有透光区；\n\n[0010]平坦层，设置于所述Micro LED发光单元以及所述基底上；\n\n[0011]彩色色阻，对应所述第二像素区域设于所述平坦层上。\n\n[0012]在本申请的彩膜基板中，所述平坦层背离所述基底一侧的表面为平整面，所述彩膜基板还包括设于所述彩色色阻以及所述平坦层上的保护层，所述保护层背离所述基底一侧的表面为平整面。\n\n[0013]在本申请的彩膜基板中，所述平坦层包括第一子平坦层和第二子平坦层，所述第一子平坦层填充于相邻两所述Micro LED发光单元之间，所述第二子平坦层设置于所述Micro LED发光单元以及所述第一子平坦层上，所述第二子平坦层背离所述Micro LED发光单元一侧的表面为平整面。\n\n[0014]在本申请的彩膜基板中，所述彩色色阻背离所述基底一侧设有第三子平坦层，所述第三子平坦层背离所述基底一侧的表面为平整面，所述保护层设于所述第三子平坦层表面。\n\n[0015]在本申请的彩膜基板中，所述平坦层的厚度为3μm-100μm。\n\n[0016]在本申请的彩膜基板中，所述平坦层对应所述Micro LED发光单元的部分的厚度小于所述平坦层对应所述Micro LED发光单元之外的部分的厚度。\n\n[0017]在本申请的彩膜基板中，所述平坦层对应所述Micro LED发光单元的部分的厚度为2μm-80μm。\n\n[0018]在本申请的彩膜基板中，所述平坦层的透光率大于或等于70％。\n\n[0019]在本申请的彩膜基板中，所述彩膜基板还包括第一驱动电路，所述第一驱动电路对应所述第一像素区域设于所述基底面向所述Micro LED发光单元的一侧表面，所述MicroLED发光单元与所述第一驱动电路电连接。\n\n[0020]在本申请的彩膜基板中，所述第一驱动电路包括沿横向延伸的扫描线和沿纵向延伸的数据线，相邻两所述扫描线与相邻两所述数据线界定出子像素区域，所述Micro LED发光单元在所述基底上的正投影面积小于所述子像素区域的面积。\n\n[0021]在本申请的彩膜基板中，所述Micro LED发光单元在所述基底上的正投影面积占所述子像素区域面积的10％-50％，所述Micro LED发光单元包括红色发光单元、绿色发光单元以及蓝色发光单元。\n\n[0022]在本申请的彩膜基板中，所述红色发光单元包括蓝色发光单元以及设于所述蓝色发光单元上的色转换层，所述绿色发光单元包括蓝色发光单元以及设于所述蓝色发光单元上的色转换层，所述色转换层为量子点膜或荧光粉。\n\n[0023]在本申请的彩膜基板中，所述第一驱动电路还包括薄膜晶体管，每一所述MicroLED发光单元通过对应的所述薄膜晶体管分别与对应的所述扫描线和对应的所述数据线电连接。\n\n[0024]本申请还提供一种显示面板，包括如上所述的彩膜基板。\n\n[0025]本申请还提供一种显示装置，包括如上所述的彩膜基板。\n\n[0026]本申请的有益效果为：本申请提供的彩膜基板、显示面板、显示装置，通过将MicroLED(微发光二极管)显示技术与LCD(液晶显示器)显示技术相结合，从而实现LCD极致全面屏显示；并充分利用Micro LED发光单元体积小、可提升面板透过性的优势实现屏内传感集成功能。本申请在显示上实现了Micro LED显示技术与LCD显示技术在横向与纵向空间的无缝衔接，从而解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。\n\n附图说明\n\n[0027]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0028]图1(a)-1(e)为本申请实施例提供的不同类型的彩膜基板的俯视图；\n\n[0029]图2为本申请一种实施例提供的彩膜基板的截面示意图；\n\n[0030]图3为本申请实施例提供的彩膜基板具有Micro LED发光单元的示意图；\n\n[0031]图4为本申请另一种实施例提供的彩膜基板的结构示意图；\n\n[0032]图5为本申请又一种实施例提供的彩膜基板的结构示意图；\n\n[0033]图6为本申请实施例提供的彩膜基板的第一种制备方法流程图；\n\n[0034]图7(a)-7(d)为本申请彩膜基板的第一种制备方法流程示意图；\n\n[0035]图8为本申请实施例提供的彩膜基板的第二种制备方法流程图；\n\n[0036]图9(a)-9(b)为本申请彩膜基板的第二种制备方法流程示意图；\n\n[0037]图10为本申请实施例提供的显示面板的结构示意图；\n\n[0038]图11为本申请实施例提供的显示装置的结构示意图。\n\n具体实施方式\n\n[0039]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0040]在本申请的描述中，需要理解的是，术语“纵向”、“横向”、“长度”、“宽度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。在本申请中，“/”表示“或者”的意思。\n\n[0041]本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。\n\n[0042]在中小尺寸显示领域，全面屏技术成为当前的重点研发方向目前主流的显示技术包括液晶显示器(Liquid Crystal Display,LCD)和有机发光二极管(Organic Light-Emitting Diode,OLED)，其中LCD为被动发光技术，通过整面背光结构照射液晶盒实现光纤的亮暗控制，而OLED技术则是采用逐颗的OLED像素主动发光。因为相较而言具有高对比、轻薄、可弯曲、可折叠等优势，以及可以很好的与现行的光学指纹识别模组等兼容，因而面内光学传感技术已成为目前OLED屏的“独有优势”。而LCD屏的低成本优势显得岌岌可危。\n\n[0043]基于此，本申请的首要目的在于提供一种彩膜基板及其制备方法、显示面板及显示装置，用以解决传统LCD屏中光学式传感器与光学显示无法在空间上重合，进而导致LCD屏不能满足人们对全面屏极致需求的问题。\n\n[0044]另外，Micro LED(微发光二极管)相较于OLED技术具有相似的主动发光特性，同时由于无机LED本身的稳定性与高效率等特点，在技术上较OLED具有寿命长、亮度高、控制芯片(chip)尺寸小、响应时间长等优势。但是相较于传统面板技术通过刻蚀等“减法制造”方式，Micro LED主要依赖于巨量转移(mass-transfer)的“加法制造”方式，在技术成熟度上较低，特别是面临巨量显示画素转移时具有先天的制程良率与成本挑战的问题。\n\n[0045]基于此，本申请的另一目的在于提供一种彩膜基板及其制备方法、显示面板及显示装置，以解决Micro LED应用于显示技术时由于巨量转移而导致制程良率低及成本高从而限制了Micro LED在显示技术上应用的问题。\n\n[0046]此外，在Micro LED应用于显示技术时，会涉及到Micro LED与基板的绑定(bonding)技术，但是由于Micro LED与基板绑定后整体高度大于中小尺寸LCD的Cell gap(即液晶盒的阵列基板与彩膜基板之间的间隙)，从而难以实现屏内(Incell)Micro LED显示技术的集成。\n\n[0047]基于此，本申请的又一目的在于提供一种彩膜基板及其制备方法、显示面板及显示装置，以解决由于Micro LED与基板的绑定工艺而使屏内(Incell)集成Micro LED显示技术难以实现的问题。\n\n[0048]以下请结合具体实施例对本申请的彩膜基板及其制备方法、显示面板及显示装置进行详细描述。\n\n[0049]请参照图1(a)-1(e)所示，为本申请实施例提供的不同类型的彩膜基板的俯视图。本申请的彩膜基板包括第一像素区域100和邻近所述第一像素区域100的第二像素区域200，其中，所述第一像素区域100为Micro LED显示区域，所述第二像素区域200为液晶显示区域。所述第一像素区域100与所述第二像素区域200无缝衔接，因而在视觉上没有任何显示中断及不连续边界，因此，可以实现完全的全面屏设计。又由于Micro LED具有高亮、长寿命特征，故可以采用所述第一像素区域100内的部分Micro LED发光单元兼做补光灯、指示灯等功能。\n\n[0050]请结合图1(a)-1(e)以及图2所示，本申请的彩膜基板包括：基底10，所述基底10位于所述第一像素区域100和所述第二像素区域200内；多个Micro LED发光单元30，对应所述第一像素区域100设置于所述基底10上，其中，多个所述Micro LED发光单元30之间设有透光区；平坦层40，设置于所述Micro LED发光单元30以及所述基底10上；彩色色阻50，对应所述第二像素区域200设于所述平坦层40上。\n\n[0051]由于本申请的彩膜基板采用微发光二极管显示技术与液晶显示技术相结合的形式，从而可以实现LCD极致全面屏显示。又由于彩膜基板在相邻两所述Micro LED发光单元30之间设有透光区，所述透光区可以允许光线穿过，因此可以在所述第一像素区域100内实现屏内传感集成方案。另外，本申请通过将所述Micro LED发光单元30集成于彩膜基板的内部，并用所述平坦层40进行平整处理，因此Micro LED发光单元的绑定工艺不会对彩膜基板与阵列基板的成盒工艺造成影响，可实现屏内集成Micro LED显示方案。\n\n[0052]请参照图2所示，以下对本申请一种实施例提供的彩膜基板进行详细说明。所述彩膜基板包括：基底10，所述基底10可以为透光率较高的玻璃基板，或是柔性基板；第一驱动电路20，所述第一驱动电路20对应所述第一像素区域100设于所述基底10上，第一驱动电路20用于为Micro LED发光单元30提供驱动信号，以使所述Micro LED发光单元30能够发光；多个Micro LED发光单元30对应所述第一像素区域100设置于所述基底10上，且所述MicroLED发光单元30与所述第一驱动电路20电连接；平坦层40设置于所述Micro LED发光单元30以及所述基底10上，所述平坦层40用于对形成有所述Micro LED发光单元30的所述基底表面进行平整化；彩色色阻50对应所述第二像素区域200设于所述平坦层40上，且相邻两所述彩色色阻50之间设置有黑色矩阵60；所述彩色色阻50与所述黑色矩阵60上还可以设置保护层70，所述保护层70一方面可以平坦彩膜基板的表面，另一方面可以保护其覆盖的膜层不受损伤。\n\n[0053]其中，所述第一驱动电路20包括沿横向延伸的扫描线(未图示)和沿纵向延伸的数据线(未图示)，相邻两所述扫描线与相邻两所述数据线界定出子像素区域。所述扫描线与所述数据线也可以延伸至所述第二像素区域200内，可以理解的是，为了不影响所述第二像素区域200内的像素显示，延伸至所述第二像素区域200内的所述扫描线以及所述数据线的部分避开所述彩色色阻50设置，即可以对应位于所述黑色矩阵60的位置。\n\n[0054]在一种实施例中，所述第一驱动电路20可以采用主动阵列(AM)驱动技术，即所述第一驱动电路20还包括薄膜晶体管(未图示)，每一所述Micro LED发光单元30通过对应的所述薄膜晶体管分别与对应的所述扫描线和对应的所述数据线电连接。\n\n[0055]在本实施例中，为优先保证所述第一像素区域100的穿透率，所述第一驱动电路20采用被动阵列(PM)驱动技术，即所述第一驱动电路20不设置薄膜晶体管。\n\n[0056]在本实施例中，所述Micro LED发光单元30为三色显示，即所述Micro LED发光单元30包括红色发光单元、绿色发光单元以及蓝色发光单元。所述Micro LED发光单元30的尺寸为1μm-100μm，所述Micro LED发光单元30的高度为1μm-20μm。其中，所述Micro LED发光单元30可以为基底面出射结构或者电极面出射结构，此处不做限制。\n\n[0057]在另一种实施例中，所述Micro LED发光单元30采用蓝色显示结合色转换技术方案，也就是说，所述红色发光单元包括蓝色发光单元以及设于所述蓝色发光单元上的色转换层，该色转换层可将所述蓝色发光单元发出的蓝光转换为红光；所述绿色发光单元包括蓝色发光单元以及设于所述蓝色发光单元上的色转换层，该色转换层可将所述蓝色发光单元发出的蓝光转换为绿光。其中，所述色转换层为量子点膜或荧光粉等，此处不做特殊限定。\n\n[0058]结合图3所示，为本申请实施例提供的彩膜基板具有Micro LED发光单元的示意图。由于所述Micro LED发光单元30具有尺寸小的优势，因此所述Micro LED发光单元30在所述基底上的正投影面积小于所述子像素区域P的面积，使得多个所述Micro LED发光单元30之间具有透光区300。\n\n[0059]进一步的，所述Micro LED发光单元30在所述基底上的正投影面积占所述子像素区域P面积的10％-50％。\n\n[0060]在所述第一像素区域100可以实现正常显示的情况下，又由于各所述Micro LED发光单元30的覆盖面积皆小于各子像素区域P的面积，因此，在所述子像素区域P内无所述Micro LED发光单元30覆盖的区域光线可以正常透过。可以通过对所述Micro LED发光单元30关闭，使所述第一像素区域100采集外界图像进入屏下传感器。如此一来，便可实现屏下指纹识别、屏下摄像头、屏下面部识别、屏下距离感知等各种屏下传感方案。\n\n[0061]请参照图2所示，所述平坦层40整面的设置于所述第一像素区域100和所述第二像素区域200内，所述平坦层40的材料包括但不限于有机树脂、OC胶、硅胶等，所述平坦层40的材料具有良好的耐高温性能以及良好的粘着性和透光性。所述平坦层40的厚度为3μm-200μm，能够填平由于绑定所述Micro LED发光单元30而在基底上形成的段差。\n\n[0062]进一步的，由于所述Micro LED发光单元30的高度通常为1μm-20μm，为保证彩膜基板的轻薄化，同时兼顾平坦作用，所述平坦层的厚度可以为3μm-100μm。\n\n[0063]其中，所述平坦层40对应所述Micro LED发光单元30的部分的厚度小于所述平坦层40对应所述Micro LED发光单元30之外的部分的厚度。\n\n[0064]进一步的，所述平坦层40对应所述Micro LED发光单元30的部分的厚度为2μm-80μm。因此，能够保证所述平坦层40完全覆盖所述Micro LED发光单元30。\n\n[0065]其中，所述平坦层40背离所述基底10一侧的表面为平整面，因此所述平坦层40的设置有效的解决了所述Micro LED发光单元30绑定工艺中会产生较大段差而使Micro LED显示技术难以实现屏内(Incell)集成的问题。\n\n[0066]为了不影响所述第一像素区域100的透光性能，所述平坦层40的透光率大于或等于70％。\n\n[0067]进一步的，所述平坦层40的透光率大于或等于85％。\n\n[0068]在本实施例中，所述第一像素区域100内不设置所述彩色色阻50以及所述黑色矩阵60。所述保护层70设置于所述第一像素区域100以及所述第二像素区域200内，其中，所述保护层70背离所述基底10一侧的表面为平整面。如此一来，实现了在彩膜基板内集成MicroLED显示技术，同时又由于彩膜基板用于与阵列基板对位贴合的表面为平整面，因此，本申请Micro LED发光单元30的绑定不会影响中小尺寸LCD的Cell gap。\n\n[0069]在其他实施例中，所述平坦层40可以为多层结构。请参照图4所示，为本申请另一种实施例提供的彩膜基板的结构示意图。图4中的彩膜基板与图2中的彩膜基板的结构相同/相似，区别仅在于：图4中的彩膜基板的所述平坦层40包括第一子平坦层401和第二子平坦层402，所述第一子平坦层401填充于相邻两所述Micro LED发光单元30之间，所述第二子平坦层402设置于所述Micro LED发光单元30以及所述第一子平坦层401上，所述第二子平坦层402背离所述Micro LED发光单元30一侧的表面为平整面。由于所述第一子平坦层401填平了所述Micro LED发光单元30与基底10的段差，如此一来，可进一步保证形成的所述第二子平坦层402的平整性。\n\n[0070]请参照图5所示，为本申请又一种实施例提供的彩膜基板的结构示意图。图5中的彩膜基板与图4中的彩膜基板的结构相同/相似，区别仅在于：图5中的彩膜基板的所述平坦层40还包括第三子平坦层403，所述第三子平坦层403设置于所述彩色色阻50背离所述基底10一侧；其中，所述第三子平坦层403背离所述基底10一侧的表面为平整面，所述保护层70设于所述第三子平坦层403表面。由于所述第三子平坦层403填平了所述彩色色阻50与平坦层40的段差，如此一来，可进一步保证形成的所述保护层70的平整性。\n\n[0071]由于本申请的彩膜基板只在所述第一像素区域100内设置所述Micro LED发光单元30，而所述第一像素区域100的面积占比较小，因此无需依赖巨量转移的方式。如此一来，即可以实现Micro LED显示技术在显示面板/显示装置上的应用，又可以解决巨量显示画素转移时制程良率较低以及成本较高的问题。\n\n[0072]本申请还提供了一种上述彩膜基板的制备方法，请参照图6所示，所述方法包括以下步骤：\n\n[0073]步骤S1，请参照图7(a)所示，在基底10的第一像素区域100制备第一驱动电路20以及与所述第一驱动电路20电连接的第一焊接电极20a，所述第一驱动电路20包括沿横向延伸的扫描线和沿纵向延伸的数据线，所述第一焊接电极20a位于相邻两所述扫描线与相邻两所述数据线界定出的子像素区域内。\n\n[0074]其中，所述第一焊接电极20a包括一个N电极以及一个与N电极相对设置的P电极。\n\n[0075]步骤S2，请参照图7(b)所示，将Micro LED发光单元30转印于所述基底10的第一像素区域100内，且将所述Micro LED发光单元30上的第二焊接电极30a与所述第一焊接电极20a电性绑定。\n\n[0076]其中，所述第二焊接电极30a包括一个N电极以及一个与N电极相对设置的P电极，在绑定工艺中，所述Micro LED发光单元30的N电极与所述基底10上的N电极电连接，所述Micro LED发光单元30的P电极与所述基底10上的P电极电连接。\n\n[0077]步骤S3，请参照图7(c)所示，在所述Micro LED发光单元30以及所述基底10上制备平坦层40。\n\n[0078]其中，所述平坦层40能够填平所述Micro LED发光单元30与所述基底10形成的段差，且所述平坦层40背离所述基底10的表面形成平整面。\n\n[0079]步骤S4，请参照图7(d)所示，在所述平坦层40上制备彩色色阻50，所述彩色色阻50形成于邻近所述第一像素区域100的第二像素区域200内。\n\n[0080]其中，所述制备方法还包括在所述第二像素区域200内制备黑色矩阵60，所述黑色矩阵60位于相邻两所述彩色色阻50之间。所述彩色色阻50与所述黑色矩阵60制备的先后顺序此处不做限制。之后在所述彩色色阻50上制备保护层。\n\n[0081]由于本申请的彩膜基板是先在基底上制备第一驱动电路以及绑定Micro LED发光单元，之后再制作彩色色阻及黑色矩阵，因此，可以保证第一驱动电路制作工艺以及MicroLED发光单元绑定工艺中的高温制程不影响彩色色阻材料特性。\n\n[0082]在本申请的另一种实施例中，还提供了一种彩膜基板的制备方法，如图8所示，与上述彩膜基板的制备方法的区别仅在于步骤S2，本实施例的步骤S2中又包括两个步骤，具体如下：\n\n[0083]步骤S21，请参照图9(a)所示，以Micro LED发光单元30具有电性接触区的表面30b背离所述基底10的方式将所述Micro LED发光单元30转印于所述基底10的第一像素区域100内。\n\n[0084]步骤S22，请参照图9(b)所示，在所述Micro LED发光单元30上制备导电薄膜，并对所述导电薄膜进行图案化，以形成电性连接所述Micro LED发光单元30的电性接触区与所述第一焊接电极20a的导电电极400。\n\n[0085]其中，所述电性接触区包括相对设置的N接触区和P接触区，一个所述导电电极400将N接触区与基底10上的N电极电连接，一个所述导电电极400将P接触区与基底10上的P电极电连接。\n\n[0086]由于本实施例的彩膜基板是先在基底上制备第一驱动电路以及绑定Micro LED发光单元，之后再制作彩色色阻及黑色矩阵，因此，可以保证第一驱动电路制作工艺以及Micro LED发光单元绑定工艺中的高温制程不影响彩色色阻材料特性。另外，又由于本实施例在Micro LED发光单元绑定工艺中，Micro LED发光单元无需设置传统的焊接电极，因此，可以减小Micro LED发光单元绑定后的高度。\n\n[0087]本申请还提供一种显示面板，如图10所示，所述显示面板包括如上所述的彩膜基板1、阵列基板2，以及位于所述彩膜基板1与所述阵列基板2之间的液晶层3。其中，所述阵列基板2上设置有第二驱动电路21，所述第二驱动电路21设置于第二显示区域200内。由于对应显示面板的第一像素区域100内不设置所述第二驱动电路21，因此不会影响所述第一像素区域100的透光性。\n\n[0088]本申请还提供一种显示装置，如图11所示，所述显示装置包括如上所述的显示面板，以及背光模组4和传感器组件5。所述背光模组4对应第一像素区域100设有通孔41，所述传感器组件5正对所述通孔41设置。\n\n[0089]其中，所述传感器组件5为光学式传感器，可以实现面部识别、距离感应、指纹识别等，此处不做限制。\n\n[0090]综上所述，本申请提供的彩膜基板及其制备方法、显示面板、显示装置，通过采用微发光二极管显示技术与液晶显示技术相结合的形式，从而可以实现LCD极致全面屏显示。又由于彩膜基板在相邻两所述Micro LED发光单元之间设有透光区，所述透光区可以允许光线穿过，因此可以实现屏内传感集成方案。另外，本申请通过将所述Micro LED发光单元集成于彩膜基板的内部，并用所述平坦层进行平整处理，因此Micro LED发光单元的绑定工艺不会对彩膜基板与阵列基板的成盒工艺造成影响，可实现屏内集成Micro LED显示方案。\n\n[0091]综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (11009, 24063, '技术领域\n\n[0001]本实用新型涉及显示技术领域，尤其涉及一种显示面板及显示装置。\n\n背景技术\n\n[0002]现有技术的显示面板如LCD(Liquid Crystal Display，液晶显示)面板中集成了多种功能元件如指纹传感器，通常是通过在显示面板的膜层上直接迭加一层指纹传感器，浪费了显示面板的空间设计，使得显示面板的附加值低。\n\n发明内容\n\n[0003]本实用新型提供一种显示面板及显示装置，通过合理利用像素之间的非显示区以提高显示面板的附加值。\n\n[0004]为解决上述问题，本实用新型提供的技术方案如下：\n\n[0005]本实用新型实施例提供一种显示面板，其包括多个像素单元和功能元件。每个像素单元包括子像素，子像素包括第一Micro LED芯片，在俯视视角下，相邻两个第一MicroLED芯片之间设有间隙。功能元件设置于所述间隙处。其中所述功能元件的功能与所述子像素的显示功能不同。\n\n[0006]在本实用新型实施例提供的显示面板中，所述第一Micro LED芯片的长宽范围为1微米至100微米，高度范围为1微米至20微米。\n\n[0007]在本实用新型实施例提供的显示面板中，所述功能元件包括生物识别单元、天线单元、储能单元、存储单元、逻辑单元或压力检测单元中的一种或几种的组合。\n\n[0008]在本实用新型实施例提供的显示面板中，所述生物识别单元包括指纹识别单元，所述指纹识别单元包括指纹识别传感器，所述显示面板还包括光路元件，所述指纹识别传感器设置于所述间隙处，所述光路元件对应设置在所述指纹识别传感器的上方。\n\n[0009]在本实用新型实施例提供的显示面板中，所述指纹识别传感器的面积大小范围为10平方微米至800平方微米。\n\n[0010]在本实用新型实施例提供的显示面板中，所述指纹识别传感器与所述第一MicroLED芯片的间隔距离为1微米至10微米。\n\n[0011]在本实用新型实施例提供的显示面板中，所述生物识别单元包括近红外光传感器和第二Micro LED芯片，其中所述第二Micro LED芯片用于发射近红外光，以给所述近红外光传感器提供光源，所述近红外光传感器和所述第二Micro LED芯片一块设置在所述间隙处。\n\n[0012]在本实用新型实施例提供的显示面板中，所述功能元件包括功能不同的至少两种子功能元件。\n\n[0013]在本实用新型实施例提供的显示面板中，所述至少两种子功能元件分别设置在同一个所述像素单元内的不同所述间隙处。\n\n[0014]在本实用新型实施例提供的显示面板中，所述至少两种子功能元件设置在同一个所述像素单元内的同一个所述间隙处。\n\n[0015]在本实用新型实施例提供的显示面板中，所述至少两种子功能元件分别设置在不同的所述像素单元内的所述间隙处。\n\n[0016]在本实用新型实施例提供的显示面板中，所述至少两子功能元件包括生物识别单元和天线单元，其中所述生物识别单元设置在一行所述像素单元内的所述间隙处，所述天线单元设置在另一行所述像素单元内的所述间隙处。\n\n[0017]在本实用新型实施例提供的显示面板中，所述至少两子功能元件还包括储能单元和存储单元。\n\n[0018]在本实用新型实施例提供的显示面板中，所述天线单元分布在天线设置区，所述生物识别单元分布在生物识别设置区，所述储能单元分布在储能设置区，所述存储单元分布在存储设置区，其中所述天线设置区位于所述显示面板的两侧区域，所述储能设置区位于所述显示面板的上部区域，所述存储设置区位于所述显示面板的下部区域，所述生物识别设置区位于所述储能设置区和所述存储设置区之间。\n\n[0019]在本实用新型实施例提供的显示面板中，所述生物识别设置区的面积占所述显示面板面积的十分之一至三分之一。\n\n[0020]本实用新型实施例提供一种显示装置，其包括前述实施例其中之一的显示面板。\n\n[0021]本实用新型的有益效果为：本实用新型提供的显示面板及显示装置中，通过采用极小尺寸的Micro LED芯片作为基本子像素，从而在所述Micro LED子像素空间中预留一定的功能集成区，用于承接功能元件。设置功能元件一方面提高了显示面板的集成度，提升了显示面板的附加值，节省了整机空间，减薄了显示面板厚度，更利于实现全面屏，提升用户体验。\n\n附图说明\n\n[0022]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0023]图1为本实用新型实施例提供的显示面板结构下视示意图；\n\n[0024]图2为本实用新型实施例提供的Micro LED芯片光出射方式示意图；\n\n[0025]图3为本实用新型实施例提供的显示单元集成指纹识别单元的示意图；\n\n[0026]图4为本实用新型实施例提供的指纹识别传感器的PIN结构示意图；\n\n[0027]图5和图6为本实用新型实施例提供的指纹识别传感器在像素单元内不同设置方式的示意图；\n\n[0028]图7为本实用新型实施例提供的显示单元集成掌静脉识别单元的示意图；\n\n[0029]图8为本实用新型实施例提供的近红外光传感器的驱动电路示意图；\n\n[0030]图9为本实用新型实施例提供的显示单元集成天线单元的示意图；\n\n[0031]图10为本实用新型实施例提供的蓝牙天线的结构示意图；\n\n[0032]图11为本实用新型实施例提供的显示单元集成储能单元的示意图；\n\n[0033]图12为本实用新型实施例提供的显示单元集成存储单元的示意图；\n\n[0034]图13为本实用新型实施例提供的显示单元集成指纹识别单元和天线单元的示意图；\n\n[0035]图14为本实用新型实施例提供的显示单元集成储能单元和存储单元的第一种示意图；\n\n[0036]图15为本实用新型实施例提供的显示单元集成储能单元和存储单元的第二种示意图；\n\n[0037]图16为本实用新型实施例提供的多种功能元件同时集成时的分布示意图。\n\n具体实施方式\n\n[0038]以下各实施例的说明是参考附加的图示，用以例示本实用新型可用以实施的特定实施例。本实用新型所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本实用新型，而非用以限制本实用新型。在图中，结构相似的单元是用以相同标号表示。\n\n[0039]在一种实施例中，提供一种显示面板100，如图1所示，其包括多个像素单元20和功能元件30。每个像素单元20包括子像素21，子像素21包括第一Micro LED芯片211，在俯视视角下，相邻两个第一Micro LED芯片211之间设有间隙。功能元件30设置于所述间隙处。其中所述功能元件30的功能与所述子像素21的显示功能不同。\n\n[0040]具体的，显示面板100还包括驱动背板10。每个像素单元20包括三个子像素21，每个子像素21包括一个第一Micro LED芯片211，第一Micro LED芯片211绑定在驱动背板10上。功能元件30设置于驱动背板10上，且功能元件30设置于相邻两个第一Micro LED芯片211之间的间隙内，也即对应设置在像素单元20内未设置第一Micro LED芯片211的区域。\n\n[0041]具体的，每个像素单元20设置有第一Micro LED芯片211的区域为显示区，未设置第一Micro LED芯片211的区域为非显示区。也即相邻第一Micro LED芯片211之间的间隙即为像素单元20的非显示区。功能元件30设置在至少部分像素单元20的非显示区。其中，功能元件30包括生物识别单元、天线单元、储能单元、存储单元、逻辑单元、及压力检测单元等功能元件中的一种或几种的组合。\n\n[0042]进一步的，每个子像素21通过第一Micro LED芯片211发光，给显示面板显示提供画素，以实现显示面板的显示功能。功能元件的功能为非显示功能，如功能元件为实现指纹识别等功能。\n\n[0043]具体的，每个像素单元20的三个第一Micro LED芯片211分别为红、绿、蓝三原色Micro LED芯片，用于显示面板的显示。当然的，每个像素单元20的三个第一Micro LED芯片211也可以为同色Micro LED芯片，并配合量子点膜或荧光粉实现显示三基色。\n\n[0044]需要说明的是，本实用新型的像素单元20不限于采用RGB(红、绿、蓝)三基色显示，也可以采用RGBW(红、绿、蓝、白)等四元像素。采用RGBW四元像素时，每个像素单元包括四个Micro LED芯片。\n\n[0045]进一步的，第一Micro LED芯片211通过巨量转移等技术转移并绑定到驱动背板10上。驱动背板10包括驱动电路(图未示)，驱动电路用于驱动第一Micro LED芯片211。驱动电路可以采用包括基于非晶硅(α-Si)、低温多晶硅(Low Temperature Poly Silicon，LTPS)、铟镓锌氧化物(Indium Gallium Zinc Oxide，IGZO)等的主动阵列驱动技术或者被动阵列驱动技术实现。\n\n[0046]进一步的，第一Micro LED芯片211可以为基底面出射或者电极面出射结构，如图2所示的第一Micro LED芯片结构包括基底2111、发光层2112、电极层2113。如图2中的a示出的为电极面出射结构，如图2中的b示出的为基底面出射结构，图2中带箭头的虚线X的指向表示光的出射方向。\n\n[0047]进一步的，第一Micro LED芯片的长宽范围为1微米至100微米，高度范围为1微米至20微米。\n\n[0048]在本实施例中，在特定的像素密度下，显示面板的像素单元通过采用极小尺寸的第一Micro LED芯片作为显示单元，使像素单元有足够的非显示区域用来设置功能元件。提高了显示面板的集成度，提升了显示面板的附加值，节省了整机空间。\n\n[0049]在一种实施例中，功能元件设置为生物识别单元中的指纹识别单元。如图3所示，指纹识别单元包括指纹识别传感器(sensor)311，显示面板还包括光路元件312。指纹识别传感器311设置于相邻第一Micro LED芯片211之间的间隙，光路元件312设置于指纹识别传感器311的上方。光路元件312与指纹识别传感器311一一对应。\n\n[0050]具体的，指纹识别传感器311可以设置于部分或全部像素单元的非显示区。或者指纹识别传感器311对应设置于部分子像素或全部子像素的非显示区(子像素的非显示区是指对应子像素未设置第一Micro LED芯片的区域)。\n\n[0051]具体的，指纹识别传感器采用α-Si、LTPS、OPD(Organic Photo diode，有机材料构成的光电二级管)等PIN结构实现，如图4所示的指纹识别传感器PIN结构包括层叠设置的阴极3111、电子传输层3112、本征有源层3113、空穴传输层3114及阳极3115。\n\n[0052]进一步的，所述指纹识别传感器的面积大小范围为10平方微米至800平方微米。具体的，所述指纹识别传感器的面积大小由指纹识别传感器的光电效率、光路效率、电路效率、光强度和电路读取精度等共同决定。所述指纹识别传感器的尺寸优选能够满足生物集成需求的最小面积以降低对显示开口率的影响。\n\n[0053]进一步的，所述指纹识别传感器与所述第一Micro LED芯片的间隔距离为1微米至10微米。具体的所述指纹识别传感器与所述第一Micro LED芯片的间隔距离依赖于光路的噪声抑制效率。\n\n[0054]进一步的，指纹识别单元还包括用于驱动指纹识别传感器311的驱动电路(图未示)。指纹识别传感器311的驱动电路兼容用于驱动第一Micro LED芯片211的背板驱动电路结构。\n\n[0055]进一步的，指纹识别传感器311的驱动电路可以采用主动式或者被动式阵列驱动方式，其中主动式利用光生电流产生的电压对生物信号进行光生电压放大，通常采用3T(薄膜晶体管)或者4T驱动架构。被动式驱动直接利用指纹识别传感器产生的光生电流在一定时间内的积分作为生物识别信号，通常采用1T或者2T驱动架构。\n\n[0056]进一步的，采用准直孔、微透镜(micro lens)等光学原理实现光路元件312与指纹识别传感器311的一一对应。\n\n[0057]进一步的，第一Micro LED芯片211发射的光线经过指纹脊谷反射，形成不同的反射光并经过光路元件312被指纹识别传感器311识别并形成不同的明暗成像。\n\n[0058]进一步的，指纹识别传感器311及其驱动电路通常为不透光结构，为减少对子像素显示的影响，指纹识别传感器311设置于子像素行信号之间，即设置于相邻的两行子像素之间的间隙内。如图5所示，指纹识别传感器311设置在相邻的两行第一Micro LED芯片211之间的间隙内。当然的，显示面板也可以采用RGBW等四元像素方式在实现穿透率提升的同时，采用指纹识别传感器311与W像素共享像素开口区域的方式，如图6所示。\n\n[0059]在本实施例中，把指纹识别单元集成在像素单元的非显示区，在实现全面屏，提升显示面板集成度的同时，减薄了显示面板的厚度，提升了显示面板的附加值，同时可以实现整面的指纹识别，提升用户的体验。\n\n[0060]在一种实施例中，功能元件设置为生物识别单元中的掌静脉识别单元。如图7所示，生物识别单元包括近红外光传感器313和第二Micro LED芯片212。第二Micro LED芯片212用于发射近红外光，以给近红外光传感器提供光源。第二Micro LED芯片212和近红外光传感器313一起设置在相邻第一Micro LED芯片211之间的间隙内，且第二Micro LED芯片212也绑定在驱动背板10上。进一步的，近红外光传感器313和近红外光传感器313一起设置设置在像素单元20内的非显示区，且近红外光传感器313设置在未设置第二Micro LED芯片212和第一Micro LED芯片211的区域。具体的对应设置在设置有第二Micro LED芯片212的像素单元20内。\n\n[0061]具体的，第二Micro LED芯片212的大小(size)小于第一Micro LED芯片211的大小(size)。\n\n[0062]具体的，第二Micro LED芯片212的大小(size)是第一Micro LED芯片211的大小(size)的二分之一或三分之一或者更小。需要说明的是，第二Micro LED芯片212的大小(size)不限于此，第二Micro LED芯片212的大小(size)可以根据近红外光传感器313的光电效率及近红外Micro LED的光强等参数来设定。\n\n[0063]进一步的，如图8所示，近红外光传感器的电路结构包括近红外光生电流二极管(photo diode)PD、薄膜晶体管T1、及储存电容C。\n\n[0064]具体的，存储电容C用于存储积累近红外光生电流二极管PD曝光产生的电流，薄膜晶体管T1用于控制曝光前存储电容C的清零和曝光后数据的读取。当然的，图8中的栅极(Gate)线需连接到显示区外的时序控制扫描电路，读出电路readout需连接到显示区外的模拟前端(Analog Front End，AFE)电路进行积分及滤波等处理。\n\n[0065]进一步的，近红外光传感器313的驱动方式可以是如图8示出的被动式阵列驱动方式，也可以采用驱动能力更强的主动式阵列驱动方式。\n\n[0066]可以理解的是，为减少对子像素显示的影响，近红外光传感器的排布方式可以参考上述实施例中指纹识别传感器的排布方式，在此不再赘述。\n\n[0067]在本实施例中，把掌静脉识别单元设置在像素单元的非显示区，无需搭配额外的近红外灯照射装置，无需搭配光学镜头，无需搭配额外的传感器，即可实现掌静脉的安全识别，提高了显示面板的集成度，提升了显示面板的附加值，且丰富了显示器的功能。\n\n[0068]需要说明的是，本实用新型的生物识别单元不限于指纹识别和掌静脉识别，还包括摄像头、掌纹识别、虹膜识别等。其中生物识别单元作为环境光检测或者摄像头作用时，传感器可以设置为识别可见光波段。作为指纹、掌纹检测时，传感器可以设置为识别可见光波段或者近红外光波段，如850纳米或者940纳米等。作为环境紫外光检测时，传感器可以设置为识别小于380纳米的紫外光波段。\n\n[0069]在一种实施例中，功能元件设置为天线单元。天线单元设置在像素单元的非显示区。如图9所示，天线单元32设置在未设置第一Micro LED芯片211的区域，也即设置于相邻两个第一Micro LED芯片211之间的间隙处。天线单元32可以为通讯天线，如2G/3G/4G/5G通讯天线等、NFC天线、蓝牙天线、WIFI天线等天线中的一种或上述多种天线的集合。天线单元32可以通过整面的天线布置实现大面积阵列结构，阵列天线单元32与外围射频前端、收发器及基带芯片共同构成了基本通信单元。其中射频前端包括射频开关、射频信号放大、滤波器及双工器等传统结构。\n\n[0070]具体的，以通讯天线为例，通讯天线可以采用共面波导(slot-loop)、狭缝式(slot)、偶极天线(dipole antenna)等架构。\n\n[0071]具体的，以蓝牙天线为例，蓝牙天线可以设计为典型的倒F型或曲流型天线。如图10所示蓝牙天线结构均包括天线TL和地线GND，其中图10中的a为典型的倒F型天线，图10中的b为曲流型天线。典型的倒F型天线和曲流型天线均为绝缘体表面的金属天线结构。\n\n[0072]进一步的，在基板叠层结构上设计天线单元时，为规避天线单元与显示像素单元间的讯号干扰，天线单元需与子像素及其驱动电路做避让设计，并且依据电磁信号干扰规范设置安全间距。\n\n[0073]在本实施例中，把天线单元设置在像素单元的非显示区，提高了显示面板的集成度，提升了显示面板的附加值。同时传统天线设置于显示屏后端容易受到显示屏显示及触控等驱动走线的电磁屏蔽干扰，本实用新型的显示单元与天线单元采用共面结构可以改善大容量通信时代多天线共存所造成的信号屏蔽难题。\n\n[0074]在一种实施例中，功能元件设置为储能单元，储能单元设置在像素单元的非显示区。具体的，如图11所示，储能单元33设置在未设置第一Micro LED芯片211的区域，也即设置于相邻两个第一Micro LED芯片211之间的间隙处。储能单元33可以为电容式储能单元等。\n\n[0075]具体的，电容式储能单元包括电极板及设置于电极板之间的介电层。其中电极板可以为单层或者多层形成的平板电容结构。介电层的材料包括氮化硅(SiNx)、氧化硅(SiOx)等无机材料或陶瓷材料钛酸钡、钛酸锶等或者金属钽等。\n\n[0076]进一步的，电容式储能单元33通过对应的电路与外围充电电路连接，在像素单元通电显示状态下同步进行充电，当断电后可以通过电荷转换单元331反向给像素单元内不同的子像素供电，使第一Micro LED芯片211正常工作，从而充当一定功能的储能电池用途，提升显示系统的续航能力。\n\n[0077]进一步的，为提升电容式储能单元储能电容的大小，并避免电容讯号对子像素驱动电路的影响，电容式储能单元设置于子像素及其驱动电路以外的区域。且储能电容的形状可以为任意异形形貌以最大化储能电容的大小。\n\n[0078]在本实施例中，把储能单元设置在像素单元的非显示区，提高了显示面板的集成度，提升了显示面板的附加值。同时设置储能单元能够提升显示系统的续航能力。\n\n[0079]在一种实施例中，功能元件设置为存储单元，存储单元设置在像素单元的非显示区。如图12所示，存储单元34设置在未设置第一Micro LED芯片211的区域，也即设置于相邻两个第一Micro LED芯片211之间的间隙处。\n\n[0080]具体的，存储单元34与外围数位输入电路互联，数位输入电路通过行列扫描线给不同子像素或像素单元中的存储单元输入数位存储信号。数位存储信号通过DAC转换电路341及其他辅助电路给当前子像素或像素单元发出指令执行电讯号。从而实现单一的存储单元34控制单一的子像素或像素单元的功能，使仅在当前显示像素需要刷新时才需要额外讯号与功耗对特定的子像素或像素单元输入更新讯号。\n\n[0081]在本实施例中，把存储单元设置在像素单元的非显示区，提高了显示面板的集成度，提升了显示面板的附加值。同时设置存储单元有利于降低整体的逻辑功耗，同时可以简化数位输入电路的复杂度，实现成本降低与集成度提升的效果。\n\n[0082]需要说明的是，上述实施例中的指纹识别单元、掌静脉识别单元、天线单元、储能单元、及存储单元，示例性的示出了部分功能元件在显示面板内的集成方式，但本实用新型不限于此。而且指纹识别单元、掌静脉识别单元、天线单元、储能单元、及存储单元均可以设置在多个像素单元或多个子像素内，但本实用新型也不限把一种功能元件集成在显示面板上。本实用新型也可以把多种功能元件同时集成在显示面板上。\n\n[0083]在一种实施例中，所述功能元件包括功能不同的至少两种子功能元件。所述至少两子功能元件分别设置在不同的所述像素单元内的所述间隙处。所述至少两子功能元件包括生物识别单元和天线单元。\n\n[0084]具体的，如图13所示，指纹识别单元的指纹传感器311设置在一行像素单元20的非显示区，天线单元32设置在另一行像素单元20’的非显示区。\n\n[0085]进一步的，为减少指纹识别传感器及天线单元对子像素显示的影响，指纹识别传感器及天线单元与子像素的驱动电路均采用避让设计。\n\n[0086]在一种实施例中，与上述实施例不同的是，所述至少两子功能元件分别设置在同一个所述像素单元内的不同所述间隙处。且所述至少两子功能元件包括储能单元和存储单元。\n\n[0087]具体的，如图14所示，储能单元33和存储单元34设置在同一像素单元20的非显示区，也即相邻的两行第一Micro LED芯片211之间的间隙处。具体的，储能单元33和存储单元34设置于部分或全部像素单元20未设置第一Micro LED芯片211的区域，且储能单元33和存储单元34彼此间隔设置。\n\n[0088]在一种实施例中，与上述实施例不同的是，所述至少两子功能元件设置在同一个所述像素单元内的同一个所述间隙处。且所述至少两子功能元件包括储能单元和存储单元\n\n[0089]具体的，如图15所示，储能单元33和存储单元34设置在同一个所述像素单元20内的同一个所述间隙处。也即设置于同一子像素21的非显示区。进一步的，储能单元33和存储单元34一块设置在相邻的两个第一Micro LED芯片之间的间隙处。\n\n[0090]具体的，每个像素单元20包括三个子像素21，每个子像素21包括一个第一MicroLED芯片211。储能单元33和存储单元34设置在部分或全部子像素21内未设置第一MicroLED芯片211的区域。\n\n[0091]需要说明的是，上述实施例示例性的示出了部分功能元件在显示面板内的集成组合，但本实用新型不限于此，本实用新型也可以为其他功能元件的组合或更多种功能元件的组合。\n\n[0092]在一种实施例中，所述至少两子功能元件包括生物识别单元、天线单元、储能单元、及存储单元。所述生物识别单元、所述天线单元、所述储能单元、所述存储单元同时集成在不同的相邻第一Micro LED芯片之间的间隔内。如图16所示，所述天线单元设置于天线设置区1011，天线设置区1011分布于显示面板101的左右侧和上侧，从而能够实现最小化减少显示开口区与全向射频信号覆盖。所述储能单元设置于储能设置区1012，储能设置区1012分布于所述显示面板101的上部区域。所述存储单元设置于存储设置区1014，存储设置区1014分布于靠近所述显示面板101下边框位置的空间，使得所述存储单元的转换电路信号能够以最短的路径与下边框处FPC或者COF中IC信号进行电性连接，达成降低走线阻抗的目的。生物识别单元以指纹识别单元为例说明，所述指纹识别单元设置于指纹识别设置区1013，指纹识别设置区1013位于所述储能设置区1012和所述存储设置区1014之间的区域，如指纹识别设置区1013可以占整个显示面板101面积的十分之一至三分之一。例如可以为四分之一，匹配于手指识别区的常见位置与大面积识别需求。其中，储能设置区1012可以占据显示面板101较大的区域，以实现最大化储能面积的需求。\n\n[0093]具体的，当显示面板内集成多种功能元件时，为了保证对应不同集成功能元件区的显示像素出现明显的分界mura，需保证不同区域的子像素具有相同的形状大小或者亮度。也即不同区域的子像素大小取决于最影响开口率的功能元件的大小。即使部分区域未设置功能元件，该区域也需要设置与集成有功能元件区相同大小的子像素。\n\n[0094]在一种实施例中，提供一种显示装置，其包括上述实施例其中之一的显示面板。\n\n[0095]根据上述实施例可知：\n\n[0096]本实用新型提供一种显示面板及显示装置，显示面板包括驱动背板、绑定在驱动背板上的Micro LED芯片以及功能元件。功能元件设置于相邻两个第一Micro LED芯片之间的间隙处。通过采用极小尺寸的Micro LED芯片作为基本子像素，从而在Micro LED子像素空间中预留一定的功能集成区，用于承接功能元件。功能元件包括通讯天线、生物识别、储能电池、存储单元、逻辑电路、摄像头、压力检测等发射与传感单元。功能元件一方面提高了显示面板的集成度，提升了显示面板的附加值，节省了整机空间，减薄了显示面板厚度，更利于实现全面屏，提升用户体验。而且功能元件充分利用了显示面板的空间，其容纳空间随着模块化显示面积的增加而增加，因而能够适应显示需求做适应性调整。同时充分利用显示面板充足的空间，有利于克服传统硅半导体工艺集成度过高所造成的适用逻辑电路而不适用模拟电路的局限性，使得显示面板与传统半导体IC各自发挥空间与集成度的优势，达到优势互补效果。\n\n[0097]综上所述，虽然本实用新型已以优选实施例揭露如上，但上述优选实施例并非用以限制本实用新型，本领域的普通技术人员，在不脱离本实用新型的精神和范围内，均可作各种更动与润饰，因此本实用新型的保护范围以权利要求界定的范围为准。', '技术领域\n\n[0001]本实用新型涉及显示技术领域，尤其涉及一种显示面板及显示装置。\n\n背景技术\n\n[0002]现有技术的显示面板如LCD(Liquid Crystal Display，液晶显示)面板中集成了多种功能元件如指纹传感器，通常是通过在显示面板的膜层上直接迭加一层指纹传感器，浪费了显示面板的空间设计，使得显示面板的附加值低。\n\n发明内容\n\n[0003]本实用新型提供一种显示面板及显示装置，通过合理利用像素之间的非显示区以提高显示面板的附加值。\n\n[0004]为解决上述问题，本实用新型提供的技术方案如下：\n\n[0005]本实用新型实施例提供一种显示面板，其包括多个像素单元和功能元件。每个像素单元包括子像素，子像素包括第一Micro LED芯片，在俯视视角下，相邻两个第一MicroLED芯片之间设有间隙。功能元件设置于所述间隙处。其中所述功能元件的功能与所述子像素的显示功能不同。\n\n[0006]在本实用新型实施例提供的显示面板中，所述第一Micro LED芯片的长宽范围为1微米至100微米，高度范围为1微米至20微米。\n\n[0007]在本实用新型实施例提供的显示面板中，所述功能元件包括生物识别单元、天线单元、储能单元、存储单元、逻辑单元或压力检测单元中的一种或几种的组合。\n\n[0008]在本实用新型实施例提供的显示面板中，所述生物识别单元包括指纹识别单元，所述指纹识别单元包括指纹识别传感器，所述显示面板还包括光路元件，所述指纹识别传感器设置于所述间隙处，所述光路元件对应设置在所述指纹识别传感器的上方。\n\n[0009]在本实用新型实施例提供的显示面板中，所述指纹识别传感器的面积大小范围为10平方微米至800平方微米。\n\n[0010]在本实用新型实施例提供的显示面板中，所述指纹识别传感器与所述第一MicroLED芯片的间隔距离为1微米至10微米。\n\n[0011]在本实用新型实施例提供的显示面板中，所述生物识别单元包括近红外光传感器和第二Micro LED芯片，其中所述第二Micro LED芯片用于发射近红外光，以给所述近红外光传感器提供光源，所述近红外光传感器和所述第二Micro LED芯片一块设置在所述间隙处。\n\n[0012]在本实用新型实施例提供的显示面板中，所述功能元件包括功能不同的至少两种子功能元件。\n\n[0013]在本实用新型实施例提供的显示面板中，所述至少两种子功能元件分别设置在同一个所述像素单元内的不同所述间隙处。\n\n[0014]在本实用新型实施例提供的显示面板中，所述至少两种子功能元件设置在同一个所述像素单元内的同一个所述间隙处。\n\n[0015]在本实用新型实施例提供的显示面板中，所述至少两种子功能元件分别设置在不同的所述像素单元内的所述间隙处。\n\n[0016]在本实用新型实施例提供的显示面板中，所述至少两子功能元件包括生物识别单元和天线单元，其中所述生物识别单元设置在一行所述像素单元内的所述间隙处，所述天线单元设置在另一行所述像素单元内的所述间隙处。\n\n[0017]在本实用新型实施例提供的显示面板中，所述至少两子功能元件还包括储能单元和存储单元。\n\n[0018]在本实用新型实施例提供的显示面板中，所述天线单元分布在天线设置区，所述生物识别单元分布在生物识别设置区，所述储能单元分布在储能设置区，所述存储单元分布在存储设置区，其中所述天线设置区位于所述显示面板的两侧区域，所述储能设置区位于所述显示面板的上部区域，所述存储设置区位于所述显示面板的下部区域，所述生物识别设置区位于所述储能设置区和所述存储设置区之间。\n\n[0019]在本实用新型实施例提供的显示面板中，所述生物识别设置区的面积占所述显示面板面积的十分之一至三分之一。\n\n[0020]本实用新型实施例提供一种显示装置，其包括前述实施例其中之一的显示面板。\n\n[0021]本实用新型的有益效果为：本实用新型提供的显示面板及显示装置中，通过采用极小尺寸的Micro LED芯片作为基本子像素，从而在所述Micro LED子像素空间中预留一定的功能集成区，用于承接功能元件。设置功能元件一方面提高了显示面板的集成度，提升了显示面板的附加值，节省了整机空间，减薄了显示面板厚度，更利于实现全面屏，提升用户体验。\n\n附图说明\n\n[0022]为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。\n\n[0023]图1为本实用新型实施例提供的显示面板结构下视示意图；\n\n[0024]图2为本实用新型实施例提供的Micro LED芯片光出射方式示意图；\n\n[0025]图3为本实用新型实施例提供的显示单元集成指纹识别单元的示意图；\n\n[0026]图4为本实用新型实施例提供的指纹识别传感器的PIN结构示意图；\n\n[0027]图5和图6为本实用新型实施例提供的指纹识别传感器在像素单元内不同设置方式的示意图；\n\n[0028]图7为本实用新型实施例提供的显示单元集成掌静脉识别单元的示意图；\n\n[0029]图8为本实用新型实施例提供的近红外光传感器的驱动电路示意图；\n\n[0030]图9为本实用新型实施例提供的显示单元集成天线单元的示意图；\n\n[0031]图10为本实用新型实施例提供的蓝牙天线的结构示意图；\n\n[0032]图11为本实用新型实施例提供的显示单元集成储能单元的示意图；\n\n[0033]图12为本实用新型实施例提供的显示单元集成存储单元的示意图；\n\n[0034]图13为本实用新型实施例提供的显示单元集成指纹识别单元和天线单元的示意图；\n\n[0035]图14为本实用新型实施例提供的显示单元集成储能单元和存储单元的第一种示意图；\n\n[0036]图15为本实用新型实施例提供的显示单元集成储能单元和存储单元的第二种示意图；\n\n[0037]图16为本实用新型实施例提供的多种功能元件同时集成时的分布示意图。\n\n具体实施方式\n\n[0038]以下各实施例的说明是参考附加的图示，用以例示本实用新型可用以实施的特定实施例。本实用新型所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本实用新型，而非用以限制本实用新型。在图中，结构相似的单元是用以相同标号表示。\n\n[0039]在一种实施例中，提供一种显示面板100，如图1所示，其包括多个像素单元20和功能元件30。每个像素单元20包括子像素21，子像素21包括第一Micro LED芯片211，在俯视视角下，相邻两个第一Micro LED芯片211之间设有间隙。功能元件30设置于所述间隙处。其中所述功能元件30的功能与所述子像素21的显示功能不同。\n\n[0040]具体的，显示面板100还包括驱动背板10。每个像素单元20包括三个子像素21，每个子像素21包括一个第一Micro LED芯片211，第一Micro LED芯片211绑定在驱动背板10上。功能元件30设置于驱动背板10上，且功能元件30设置于相邻两个第一Micro LED芯片211之间的间隙内，也即对应设置在像素单元20内未设置第一Micro LED芯片211的区域。\n\n[0041]具体的，每个像素单元20设置有第一Micro LED芯片211的区域为显示区，未设置第一Micro LED芯片211的区域为非显示区。也即相邻第一Micro LED芯片211之间的间隙即为像素单元20的非显示区。功能元件30设置在至少部分像素单元20的非显示区。其中，功能元件30包括生物识别单元、天线单元、储能单元、存储单元、逻辑单元、及压力检测单元等功能元件中的一种或几种的组合。\n\n[0042]进一步的，每个子像素21通过第一Micro LED芯片211发光，给显示面板显示提供画素，以实现显示面板的显示功能。功能元件的功能为非显示功能，如功能元件为实现指纹识别等功能。\n\n[0043]具体的，每个像素单元20的三个第一Micro LED芯片211分别为红、绿、蓝三原色Micro LED芯片，用于显示面板的显示。当然的，每个像素单元20的三个第一Micro LED芯片211也可以为同色Micro LED芯片，并配合量子点膜或荧光粉实现显示三基色。\n\n[0044]需要说明的是，本实用新型的像素单元20不限于采用RGB(红、绿、蓝)三基色显示，也可以采用RGBW(红、绿、蓝、白)等四元像素。采用RGBW四元像素时，每个像素单元包括四个Micro LED芯片。\n\n[0045]进一步的，第一Micro LED芯片211通过巨量转移等技术转移并绑定到驱动背板10上。驱动背板10包括驱动电路(图未示)，驱动电路用于驱动第一Micro LED芯片211。驱动电路可以采用包括基于非晶硅(α-Si)、低温多晶硅(Low Temperature Poly Silicon，LTPS)、铟镓锌氧化物(Indium Gallium Zinc Oxide，IGZO)等的主动阵列驱动技术或者被动阵列驱动技术实现。\n\n[0046]进一步的，第一Micro LED芯片211可以为基底面出射或者电极面出射结构，如图2所示的第一Micro LED芯片结构包括基底2111、发光层2112、电极层2113。如图2中的a示出的为电极面出射结构，如图2中的b示出的为基底面出射结构，图2中带箭头的虚线X的指向表示光的出射方向。\n\n[0047]进一步的，第一Micro LED芯片的长宽范围为1微米至100微米，高度范围为1微米至20微米。\n\n[0048]在本实施例中，在特定的像素密度下，显示面板的像素单元通过采用极小尺寸的第一Micro LED芯片作为显示单元，使像素单元有足够的非显示区域用来设置功能元件。提高了显示面板的集成度，提升了显示面板的附加值，节省了整机空间。\n\n[0049]在一种实施例中，功能元件设置为生物识别单元中的指纹识别单元。如图3所示，指纹识别单元包括指纹识别传感器(sensor)311，显示面板还包括光路元件312。指纹识别传感器311设置于相邻第一Micro LED芯片211之间的间隙，光路元件312设置于指纹识别传感器311的上方。光路元件312与指纹识别传感器311一一对应。\n\n[0050]具体的，指纹识别传感器311可以设置于部分或全部像素单元的非显示区。或者指纹识别传感器311对应设置于部分子像素或全部子像素的非显示区(子像素的非显示区是指对应子像素未设置第一Micro LED芯片的区域)。\n\n[0051]具体的，指纹识别传感器采用α-Si、LTPS、OPD(Organic Photo diode，有机材料构成的光电二级管)等PIN结构实现，如图4所示的指纹识别传感器PIN结构包括层叠设置的阴极3111、电子传输层3112、本征有源层3113、空穴传输层3114及阳极3115。\n\n[0052]进一步的，所述指纹识别传感器的面积大小范围为10平方微米至800平方微米。具体的，所述指纹识别传感器的面积大小由指纹识别传感器的光电效率、光路效率、电路效率、光强度和电路读取精度等共同决定。所述指纹识别传感器的尺寸优选能够满足生物集成需求的最小面积以降低对显示开口率的影响。\n\n[0053]进一步的，所述指纹识别传感器与所述第一Micro LED芯片的间隔距离为1微米至10微米。具体的所述指纹识别传感器与所述第一Micro LED芯片的间隔距离依赖于光路的噪声抑制效率。\n\n[0054]进一步的，指纹识别单元还包括用于驱动指纹识别传感器311的驱动电路(图未示)。指纹识别传感器311的驱动电路兼容用于驱动第一Micro LED芯片211的背板驱动电路结构。\n\n[0055]进一步的，指纹识别传感器311的驱动电路可以采用主动式或者被动式阵列驱动方式，其中主动式利用光生电流产生的电压对生物信号进行光生电压放大，通常采用3T(薄膜晶体管)或者4T驱动架构。被动式驱动直接利用指纹识别传感器产生的光生电流在一定时间内的积分作为生物识别信号，通常采用1T或者2T驱动架构。\n\n[0056]进一步的，采用准直孔、微透镜(micro lens)等光学原理实现光路元件312与指纹识别传感器311的一一对应。\n\n[0057]进一步的，第一Micro LED芯片211发射的光线经过指纹脊谷反射，形成不同的反射光并经过光路元件312被指纹识别传感器311识别并形成不同的明暗成像。\n\n[0058]进一步的，指纹识别传感器311及其驱动电路通常为不透光结构，为减少对子像素显示的影响，指纹识别传感器311设置于子像素行信号之间，即设置于相邻的两行子像素之间的间隙内。如图5所示，指纹识别传感器311设置在相邻的两行第一Micro LED芯片211之间的间隙内。当然的，显示面板也可以采用RGBW等四元像素方式在实现穿透率提升的同时，采用指纹识别传感器311与W像素共享像素开口区域的方式，如图6所示。\n\n[0059]在本实施例中，把指纹识别单元集成在像素单元的非显示区，在实现全面屏，提升显示面板集成度的同时，减薄了显示面板的厚度，提升了显示面板的附加值，同时可以实现整面的指纹识别，提升用户的体验。\n\n[0060]在一种实施例中，功能元件设置为生物识别单元中的掌静脉识别单元。如图7所示，生物识别单元包括近红外光传感器313和第二Micro LED芯片212。第二Micro LED芯片212用于发射近红外光，以给近红外光传感器提供光源。第二Micro LED芯片212和近红外光传感器313一起设置在相邻第一Micro LED芯片211之间的间隙内，且第二Micro LED芯片212也绑定在驱动背板10上。进一步的，近红外光传感器313和近红外光传感器313一起设置设置在像素单元20内的非显示区，且近红外光传感器313设置在未设置第二Micro LED芯片212和第一Micro LED芯片211的区域。具体的对应设置在设置有第二Micro LED芯片212的像素单元20内。\n\n[0061]具体的，第二Micro LED芯片212的大小(size)小于第一Micro LED芯片211的大小(size)。\n\n[0062]具体的，第二Micro LED芯片212的大小(size)是第一Micro LED芯片211的大小(size)的二分之一或三分之一或者更小。需要说明的是，第二Micro LED芯片212的大小(size)不限于此，第二Micro LED芯片212的大小(size)可以根据近红外光传感器313的光电效率及近红外Micro LED的光强等参数来设定。\n\n[0063]进一步的，如图8所示，近红外光传感器的电路结构包括近红外光生电流二极管(photo diode)PD、薄膜晶体管T1、及储存电容C。\n\n[0064]具体的，存储电容C用于存储积累近红外光生电流二极管PD曝光产生的电流，薄膜晶体管T1用于控制曝光前存储电容C的清零和曝光后数据的读取。当然的，图8中的栅极(Gate)线需连接到显示区外的时序控制扫描电路，读出电路readout需连接到显示区外的模拟前端(Analog Front End，AFE)电路进行积分及滤波等处理。\n\n[0065]进一步的，近红外光传感器313的驱动方式可以是如图8示出的被动式阵列驱动方式，也可以采用驱动能力更强的主动式阵列驱动方式。\n\n[0066]可以理解的是，为减少对子像素显示的影响，近红外光传感器的排布方式可以参考上述实施例中指纹识别传感器的排布方式，在此不再赘述。\n\n[0067]在本实施例中，把掌静脉识别单元设置在像素单元的非显示区，无需搭配额外的近红外灯照射装置，无需搭配光学镜头，无需搭配额外的传感器，即可实现掌静脉的安全识别，提高了显示面板的集成度，提升了显示面板的附加值，且丰富了显示器的功能。\n\n[0068]需要说明的是，本实用新型的生物识别单元不限于指纹识别和掌静脉识别，还包括摄像头、掌纹识别、虹膜识别等。其中生物识别单元作为环境光检测或者摄像头作用时，传感器可以设置为识别可见光波段。作为指纹、掌纹检测时，传感器可以设置为识别可见光波段或者近红外光波段，如850纳米或者940纳米等。作为环境紫外光检测时，传感器可以设置为识别小于380纳米的紫外光波段。\n\n[0069]在一种实施例中，功能元件设置为天线单元。天线单元设置在像素单元的非显示区。如图9所示，天线单元32设置在未设置第一Micro LED芯片211的区域，也即设置于相邻两个第一Micro LED芯片211之间的间隙处。天线单元32可以为通讯天线，如2G/3G/4G/5G通讯天线等、NFC天线、蓝牙天线、WIFI天线等天线中的一种或上述多种天线的集合。天线单元32可以通过整面的天线布置实现大面积阵列结构，阵列天线单元32与外围射频前端、收发器及基带芯片共同构成了基本通信单元。其中射频前端包括射频开关、射频信号放大、滤波器及双工器等传统结构。\n\n[0070]具体的，以通讯天线为例，通讯天线可以采用共面波导(slot-loop)、狭缝式(slot)、偶极天线(dipole antenna)等架构。\n\n[0071]具体的，以蓝牙天线为例，蓝牙天线可以设计为典型的倒F型或曲流型天线。如图10所示蓝牙天线结构均包括天线TL和地线GND，其中图10中的a为典型的倒F型天线，图10中的b为曲流型天线。典型的倒F型天线和曲流型天线均为绝缘体表面的金属天线结构。\n\n[0072]进一步的，在基板叠层结构上设计天线单元时，为规避天线单元与显示像素单元间的讯号干扰，天线单元需与子像素及其驱动电路做避让设计，并且依据电磁信号干扰规范设置安全间距。\n\n[0073]在本实施例中，把天线单元设置在像素单元的非显示区，提高了显示面板的集成度，提升了显示面板的附加值。同时传统天线设置于显示屏后端容易受到显示屏显示及触控等驱动走线的电磁屏蔽干扰，本实用新型的显示单元与天线单元采用共面结构可以改善大容量通信时代多天线共存所造成的信号屏蔽难题。\n\n[0074]在一种实施例中，功能元件设置为储能单元，储能单元设置在像素单元的非显示区。具体的，如图11所示，储能单元33设置在未设置第一Micro LED芯片211的区域，也即设置于相邻两个第一Micro LED芯片211之间的间隙处。储能单元33可以为电容式储能单元等。\n\n[0075]具体的，电容式储能单元包括电极板及设置于电极板之间的介电层。其中电极板可以为单层或者多层形成的平板电容结构。介电层的材料包括氮化硅(SiNx)、氧化硅(SiOx)等无机材料或陶瓷材料钛酸钡、钛酸锶等或者金属钽等。\n\n[0076]进一步的，电容式储能单元33通过对应的电路与外围充电电路连接，在像素单元通电显示状态下同步进行充电，当断电后可以通过电荷转换单元331反向给像素单元内不同的子像素供电，使第一Micro LED芯片211正常工作，从而充当一定功能的储能电池用途，提升显示系统的续航能力。\n\n[0077]进一步的，为提升电容式储能单元储能电容的大小，并避免电容讯号对子像素驱动电路的影响，电容式储能单元设置于子像素及其驱动电路以外的区域。且储能电容的形状可以为任意异形形貌以最大化储能电容的大小。\n\n[0078]在本实施例中，把储能单元设置在像素单元的非显示区，提高了显示面板的集成度，提升了显示面板的附加值。同时设置储能单元能够提升显示系统的续航能力。\n\n[0079]在一种实施例中，功能元件设置为存储单元，存储单元设置在像素单元的非显示区。如图12所示，存储单元34设置在未设置第一Micro LED芯片211的区域，也即设置于相邻两个第一Micro LED芯片211之间的间隙处。\n\n[0080]具体的，存储单元34与外围数位输入电路互联，数位输入电路通过行列扫描线给不同子像素或像素单元中的存储单元输入数位存储信号。数位存储信号通过DAC转换电路341及其他辅助电路给当前子像素或像素单元发出指令执行电讯号。从而实现单一的存储单元34控制单一的子像素或像素单元的功能，使仅在当前显示像素需要刷新时才需要额外讯号与功耗对特定的子像素或像素单元输入更新讯号。\n\n[0081]在本实施例中，把存储单元设置在像素单元的非显示区，提高了显示面板的集成度，提升了显示面板的附加值。同时设置存储单元有利于降低整体的逻辑功耗，同时可以简化数位输入电路的复杂度，实现成本降低与集成度提升的效果。\n\n[0082]需要说明的是，上述实施例中的指纹识别单元、掌静脉识别单元、天线单元、储能单元、及存储单元，示例性的示出了部分功能元件在显示面板内的集成方式，但本实用新型不限于此。而且指纹识别单元、掌静脉识别单元、天线单元、储能单元、及存储单元均可以设置在多个像素单元或多个子像素内，但本实用新型也不限把一种功能元件集成在显示面板上。本实用新型也可以把多种功能元件同时集成在显示面板上。\n\n[0083]在一种实施例中，所述功能元件包括功能不同的至少两种子功能元件。所述至少两子功能元件分别设置在不同的所述像素单元内的所述间隙处。所述至少两子功能元件包括生物识别单元和天线单元。\n\n[0084]具体的，如图13所示，指纹识别单元的指纹传感器311设置在一行像素单元20的非显示区，天线单元32设置在另一行像素单元20’的非显示区。\n\n[0085]进一步的，为减少指纹识别传感器及天线单元对子像素显示的影响，指纹识别传感器及天线单元与子像素的驱动电路均采用避让设计。\n\n[0086]在一种实施例中，与上述实施例不同的是，所述至少两子功能元件分别设置在同一个所述像素单元内的不同所述间隙处。且所述至少两子功能元件包括储能单元和存储单元。\n\n[0087]具体的，如图14所示，储能单元33和存储单元34设置在同一像素单元20的非显示区，也即相邻的两行第一Micro LED芯片211之间的间隙处。具体的，储能单元33和存储单元34设置于部分或全部像素单元20未设置第一Micro LED芯片211的区域，且储能单元33和存储单元34彼此间隔设置。\n\n[0088]在一种实施例中，与上述实施例不同的是，所述至少两子功能元件设置在同一个所述像素单元内的同一个所述间隙处。且所述至少两子功能元件包括储能单元和存储单元\n\n[0089]具体的，如图15所示，储能单元33和存储单元34设置在同一个所述像素单元20内的同一个所述间隙处。也即设置于同一子像素21的非显示区。进一步的，储能单元33和存储单元34一块设置在相邻的两个第一Micro LED芯片之间的间隙处。\n\n[0090]具体的，每个像素单元20包括三个子像素21，每个子像素21包括一个第一MicroLED芯片211。储能单元33和存储单元34设置在部分或全部子像素21内未设置第一MicroLED芯片211的区域。\n\n[0091]需要说明的是，上述实施例示例性的示出了部分功能元件在显示面板内的集成组合，但本实用新型不限于此，本实用新型也可以为其他功能元件的组合或更多种功能元件的组合。\n\n[0092]在一种实施例中，所述至少两子功能元件包括生物识别单元、天线单元、储能单元、及存储单元。所述生物识别单元、所述天线单元、所述储能单元、所述存储单元同时集成在不同的相邻第一Micro LED芯片之间的间隔内。如图16所示，所述天线单元设置于天线设置区1011，天线设置区1011分布于显示面板101的左右侧和上侧，从而能够实现最小化减少显示开口区与全向射频信号覆盖。所述储能单元设置于储能设置区1012，储能设置区1012分布于所述显示面板101的上部区域。所述存储单元设置于存储设置区1014，存储设置区1014分布于靠近所述显示面板101下边框位置的空间，使得所述存储单元的转换电路信号能够以最短的路径与下边框处FPC或者COF中IC信号进行电性连接，达成降低走线阻抗的目的。生物识别单元以指纹识别单元为例说明，所述指纹识别单元设置于指纹识别设置区1013，指纹识别设置区1013位于所述储能设置区1012和所述存储设置区1014之间的区域，如指纹识别设置区1013可以占整个显示面板101面积的十分之一至三分之一。例如可以为四分之一，匹配于手指识别区的常见位置与大面积识别需求。其中，储能设置区1012可以占据显示面板101较大的区域，以实现最大化储能面积的需求。\n\n[0093]具体的，当显示面板内集成多种功能元件时，为了保证对应不同集成功能元件区的显示像素出现明显的分界mura，需保证不同区域的子像素具有相同的形状大小或者亮度。也即不同区域的子像素大小取决于最影响开口率的功能元件的大小。即使部分区域未设置功能元件，该区域也需要设置与集成有功能元件区相同大小的子像素。\n\n[0094]在一种实施例中，提供一种显示装置，其包括上述实施例其中之一的显示面板。\n\n[0095]根据上述实施例可知：\n\n[0096]本实用新型提供一种显示面板及显示装置，显示面板包括驱动背板、绑定在驱动背板上的Micro LED芯片以及功能元件。功能元件设置于相邻两个第一Micro LED芯片之间的间隙处。通过采用极小尺寸的Micro LED芯片作为基本子像素，从而在Micro LED子像素空间中预留一定的功能集成区，用于承接功能元件。功能元件包括通讯天线、生物识别、储能电池、存储单元、逻辑电路、摄像头、压力检测等发射与传感单元。功能元件一方面提高了显示面板的集成度，提升了显示面板的附加值，节省了整机空间，减薄了显示面板厚度，更利于实现全面屏，提升用户体验。而且功能元件充分利用了显示面板的空间，其容纳空间随着模块化显示面积的增加而增加，因而能够适应显示需求做适应性调整。同时充分利用显示面板充足的空间，有利于克服传统硅半导体工艺集成度过高所造成的适用逻辑电路而不适用模拟电路的局限性，使得显示面板与传统半导体IC各自发挥空间与集成度的优势，达到优势互补效果。\n\n[0097]综上所述，虽然本实用新型已以优选实施例揭露如上，但上述优选实施例并非用以限制本实用新型，本领域的普通技术人员，在不脱离本实用新型的精神和范围内，均可作各种更动与润饰，因此本实用新型的保护范围以权利要求界定的范围为准。');
INSERT INTO `os_patent_instruction_text` VALUES (11010, 24064, '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种像素驱动电路及显示面板。\n\n背景技术\n\n[0002]采用低温多晶硅技术制成的背板虽然可以使显示面板达到较高的像素密度，但由于硅类晶体管的漏电流较大，在显示面板使用低刷新频率时，显示面板的显示效果较差，影响显示品质。\n\n实用新型内容\n\n[0003]本申请实施例提供一种像素驱动电路及显示面板，可以维持驱动晶体管的栅极电压稳定，降低所述驱动晶体管的源极或漏极对所述驱动晶体管栅极的影响，改善显示面板的显示效果。\n\n[0004]本申请实施例提供一种像素驱动电路，包括：发光器件、驱动晶体管以及补偿模块；所述补偿模块至少包括：初始化晶体管及补偿晶体管；\n\n[0005]所述初始化晶体管用于响应第一扫描信号并将电位可变信号传输至所述驱动晶体管的栅极，初始化所述驱动晶体管的栅极电压；\n\n[0006]所述补偿晶体管用于响应补偿控制信号并将具有补偿阈值电压的数据信号传输至所述驱动晶体管的栅极；\n\n[0007]其中，所述初始化晶体管与所述补偿晶体管的类型不同；所述电位可变信号在发光阶段动态补偿所述驱动晶体管的栅极电压。\n\n[0008]在一些实施例中，所述初始化晶体管为硅晶体管或氧化物晶体管的其中之一，所述补偿晶体管为硅晶体管或氧化物晶体管的其中另一。\n\n[0009]在一些实施例中，所述初始化晶体管为硅晶体管，所述补偿晶体管为氧化物晶体管。\n\n[0010]在一些实施例中，所述初始化晶体管为P型晶体管；所述补偿晶体管为N型晶体管。\n\n[0011]在一些实施例中，所述电位可变信号在所述初始化晶体管响应所述第一扫描信号、所述补偿晶体管响应所述补偿控制信号时为恒定低电平信号，在所述发光阶段为连续上升信号。\n\n[0012]在一些实施例中，所述像素驱动电路还包括数据写入模块，所述数据写入模块用于响应第二扫描信号并将所述数据信号传输至所述驱动晶体管的源极或漏极。\n\n[0013]在一些实施例中，所述像素驱动电路还包括存储模块，所述存储模块用于维持所述驱动晶体管的栅极电压。\n\n[0014]在一些实施例中，所述像素驱动电路还包括发光控制模块，所述发光控制模块用于响应发光控制信号控制所述发光器件发光。\n\n[0015]在一些实施例中，所述像素驱动电路还包括复位模块，所述复位模块用于响应第二扫描信号并将复位信号传输至所述发光器件的阳极。\n\n[0016]在一些实施例中，所述复位信号为恒定信号。\n\n[0017]在一些实施例中，所述发光器件包括有机发光二极管、次毫米发光二极管及微型发光二极管的其中一种。\n\n[0018]本申请还提供一种显示面板，包括：多个像素及控制所述像素发光的像素驱动电路；所述像素驱动电路包括：形成所述像素的发光器件，被配置为向所述发光器件提供驱动电流的驱动晶体管，用于提供电位可变信号的电位可变信号线，初始化晶体管，以及，补偿晶体管；所述初始化晶体管和补偿晶体管具有不同材料的半导体层；\n\n[0019]所述补偿晶体管的栅极与补偿控制信号线连接，所述补偿晶体管的源极或漏极中的一者与所述驱动晶体管的栅极连接，源极或漏极中的另一者与所述驱动晶体管的源极或漏极中的一者连接；\n\n[0020]所述初始化晶体管的栅极与第一扫描信号线连接，所述初始化晶体管的源极或漏极中的一者与电位可变信号线连接，源极或漏极中的另一者与所述驱动晶体管的栅极连接。\n\n[0021]在一些实施例中，所述初始化晶体管和所述补偿晶体管的所述半导体层的载流子迁移率不同；所述初始化晶体管的所述半导体层的载流子迁移率大于所述补偿晶体管的所述半导体层的载流子迁移率；或，所述初始化晶体管的所述半导体层的载流子迁移率小于所述补偿晶体管的所述半导体层的载流子迁移率。\n\n[0022]在一些实施例中，所述像素驱动电路还包括：\n\n[0023]数据写入晶体管，所述数据写入晶体管的栅极与第二扫描信号线连接，所述数据写入晶体管的源极或漏极中的一者与数据信号线连接，源极或漏极中的另一者与所述驱动晶体管的源极或漏极中的一者连接；\n\n[0024]存储电容，所述存储电容的上极板与第一电压端连接，下极板与所述初始化晶体管的源极或漏极中连接所述驱动晶体管栅极的一者、所述补偿晶体管的源极或漏极中连接所述驱动晶体管栅极的一者及所述驱动晶体管的栅极连接。\n\n[0025]在一些实施例中，所述像素驱动电路还包括：\n\n[0026]第一开关晶体管，所述第一开关晶体管的栅极与发光控制信号线连接，所述第一开关晶体管的源极或漏极中的一者与第一电压端连接，源极或漏极中的另一者与所述驱动晶体管的源极或漏极中的一者连接；\n\n[0027]第二开关晶体管，所述第二开关晶体管的栅极与所述发光控制信号线连接，所述第二开关晶体管的源极或漏极中的一者所述驱动晶体管的源极或漏极中的一者连接，源极或漏极中的另一者与所述发光器件的阳极连接。\n\n[0028]在一些实施例中，所述像素驱动电路还包括：\n\n[0029]复位晶体管，所述复位晶体管的栅极与第二扫描信号线连接，所述复位晶体管的源极或漏极中的一者与复位信号线连接，源极或漏极中的另一者与所述发光器件的阳极连接，所述复位晶体管与所述初始化晶体管具有相同材料的半导体层。\n\n[0030]在一些实施例中，所述显示面板还包括位于所述像素驱动电路与所述发光器件之间的导电层，在俯视视角下，所述导电层与所述补偿晶体管的正投影重合，且所述导电层覆盖所述补偿晶体管。\n\n[0031]在一些实施例中，所述导电层的制备材料包括金、银、铜、锂、钠、钾、镁、铝、锌中的至少一种。\n\n[0032]本申请实施例提供的像素驱动电路及显示面板，所述像素驱动电路包括：发光器件、驱动晶体管以及补偿模块；所述补偿模块至少包括：初始化晶体管及补偿晶体管；所述初始化晶体管用于响应第一扫描信号并将电位可变信号传输至所述驱动晶体管的栅极，初始化所述驱动晶体管的栅极电压；所述补偿晶体管用于响应补偿控制信号并将具有补偿阈值电压的数据信号传输至所述驱动晶体管的栅极；其中，所述初始化晶体管与所述补偿晶体管的类型不同；所述电位可变信号在发光阶段动态补偿所述驱动晶体管的栅极电压，以在所述发光阶段维持所述驱动晶体管的栅极电压稳定，降低所述驱动晶体管的源极或漏极对所述驱动晶体管栅极的影响，可以改善显示面板的显示效果。\n\n附图说明\n\n[0033]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0034]图1为本申请的实施例提供的像素驱动电路的原理图；\n\n[0035]图2A～图2B为本申请的实施例提供的像素驱动电路的结构示意图；\n\n[0036]图3A为图2A提供的像素驱动电路的工作时序图；\n\n[0037]图3B为图2B提供的像素驱动电路的工作时序图；\n\n[0038]图3C为本申请的实施例提供的电位可变信号及驱动晶体管栅极电压的工作时序图；\n\n[0039]图4A～图4C为本申请的实施例提供的显示面板的结构示意图；\n\n[0040]图5A～图5B为本申请的实施例提供的像素驱动电路的结构示意图。\n\n具体实施方式\n\n[0041]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0042]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0043]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0044]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0045]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0046]具体的，请参阅图1，其为本申请的实施例提供的像素驱动电路的原理图，如图2A～图2B，其为本申请的实施例提供的像素驱动电路的结构示意图；如图3A，其为图2A提供的像素驱动电路的工作时序图；如图3B，其为图2B提供的像素驱动电路的工作时序图；如图3C，其为本申请的实施例提供的电位可变信号及驱动晶体管栅极电压的工作时序图。\n\n[0047]本申请实施例提供一种像素驱动电路，包括：发光器件D1、驱动晶体管T1以及补偿模块100；所述补偿模块100至少包括：初始化晶体管T2及补偿晶体管T3；\n\n[0048]所述初始化晶体管T2用于响应第一扫描信号Scan1并将电位可变信号VI1传输至所述驱动晶体管T1的栅极，初始化所述驱动晶体管T1的栅极电压Vg；\n\n[0049]所述补偿晶体管T3用于响应补偿控制信号Scan3并将具有补偿阈值电压的数据信号Vdata传输至所述驱动晶体管T1的栅极；\n\n[0050]其中，所述初始化晶体管T2与所述补偿晶体管T3的类型不同；所述电位可变信号VI1在发光阶段t3动态补偿所述驱动晶体管T1的栅极电压Vg，以在所述发光阶段t3维持所述驱动晶体管T1的栅极电压Vg稳定，降低所述驱动晶体管T1的源极或漏极对所述驱动晶体管T1栅极的影响。\n\n[0051]进一步地，所述初始化晶体管T2为硅晶体管或氧化物晶体管的其中之一，所述补偿晶体管T3为硅晶体管或氧化物晶体管的其中另一。\n\n[0052]具体地，请继续参阅图2A～图2B及图3A～图3B，在所述发光阶段t3，利用所述补偿晶体管T3可减小所述驱动晶体管T1的源极或漏极(B点)中的一者对所述驱动晶体管T1栅极(Q点)电压Vg的影响。但所述补偿晶体管T3会存在一定的漏电流，为降低所述补偿晶体管T3的漏电流对所述驱动晶体管T1的影响，利用所述初始化晶体管T2的漏电流特性及所述电位可变信号VI1动态补偿因所述补偿晶体管T3的漏电流造成的对所述驱动晶体管T1的栅极电压Vg的影响，以使所述驱动晶体管T1的栅极电压Vg保持恒定，保证所述发光器件D1的稳定发光。更进一步地，可保证所述发光器件D1在任何刷新频率下均可实现稳定发光。\n\n[0053]更进一步地，所述初始化晶体管T2为氧化物晶体管，所述补偿晶体管T3为硅晶体管；但由于硅晶体管的漏电流要大于氧化物晶体管的漏电流，因此在所述初始化晶体管T2为氧化物晶体管，所述补偿晶体管T3为硅晶体管时，所述补偿晶体管T3的漏电流要大于所述初始化晶体管T2的漏电流，影响所述电位可变信号VI1对所述驱动晶体管T1的栅极电压Vg的补偿效果。\n\n[0054]因此，为提高对所述驱动晶体管T1的栅极电压Vg的补偿效果，所述初始化晶体管T2为硅晶体管，所述补偿晶体管T3为氧化物晶体管，利用所述补偿晶体管T3的漏电流小于所述初始化晶体管T2的漏电流的特性，降低所述驱动晶体管T1的源极或漏极(B点)中的一者对所述驱动晶体管T1栅极(Q点)电压Vg的影响，利用所述初始化晶体管T2具有较大的漏电流的特性，通过所述电位可变信号VI1降低所述补偿晶体管T3的漏电流对所述驱动晶体管T1的影响，以使所述驱动晶体管T1的栅极电压Vg保持恒定，保证所述发光器件D1的稳定发光。\n\n[0055]所述初始化晶体管T2及所述补偿晶体管T3可以为P型晶体管，也可为N型晶体管；进一步地，由于P型氧化物晶体管受目前P型氧化物材料的制约，制备出高质量的P型氧化物晶体管也受到制约，因此，在考虑现有技术的基础上，当所述初始化晶体管T2或所述补偿晶体管T3为氧化物晶体管时，选用N型氧化物晶体管。但在此并不用于限制本申请中的所述氧化物晶体管为N型晶体管，在本申请中所述氧化物晶体管也可为P型晶体管。\n\n[0056]其中，所述硅晶体管包括单晶硅晶体管、多晶硅晶体管、微晶硅晶体管、非晶硅或其他含硅的晶体管；所述氧化物晶体管包括含锌、铟、镓、锡或钛等金属及其氧化物的氧化物晶体管。进一步地，所述多晶硅晶体管包括低温多晶硅晶体管；所述氧化物晶体管包括含氧化锌、氧化锌锡、氧化锌铟、氧化铟、氧化钛、氧化铟镓锌、氧化铟锌锡等的氧化物晶体管。\n\n[0057]请继续参阅图1和图2A～图2B，所述像素驱动电路还包括数据写入模块200，所述数据写入模块200用于响应第二扫描信号Scan2并将所述数据信号Vdata传输至所述驱动晶体管T1的源极或漏极。\n\n[0058]其中，所述补偿晶体管T3采用与所述数据写入晶体管T4相同类型的晶体管时，所述补偿晶体管T3可直接利用所述第二扫描信号Scan2代替所述补偿控制信号Scan3。\n\n[0059]具体地，请参阅图2A～图2B，所述数据写入模块200包括数据写入晶体管T4，所述数据写入晶体管T4的栅极与所述第二扫描信号Scan2连接，所述数据信号Vdata传输至所述数据写入晶体管T4的第一极，所述数据写入晶体管T4的第二极与所述驱动晶体管T1的第一极连接。\n\n[0060]所述像素驱动电路还包括存储模块300，所述存储模块300用于维持所述驱动晶体管T1的栅极电压Vg。\n\n[0061]具体地，请参阅图2A～图2B，所述存储模块300包括存储电容C1，所述存储电容C1的一端与第一电压端Vdd连接，所述存储电容C1的另一端与所述驱动晶体管T1的栅极、所述初始化晶体管T2的第二极、所述补偿晶体管T3的第一极连接。具体地，所述存储电容C1的上极板与所述第一电压端Vdd连接，所述存储电容C2的下极板与所述驱动晶体管T1的栅极、所述初始化晶体管T2的第二极、所述补偿晶体管T3的第一极连接。\n\n[0062]所述像素驱动电路还包括发光控制模块400，所述发光控制模块400用于响应发光控制信号EM控制所述发光器件D1发光。\n\n[0063]具体地，请参阅图2A～图2B，所述发光控制模块400包括第一开关晶体管T5和第二开关晶体管T6；所述发光控制信号EM传输至所述第一开关晶体管T5的栅极与所述第二开关晶体管T6的栅极，所述第一开关晶体管T5的第一极与所述第一电压端Vdd连接，所述第一开关晶体管T5的第二极与所述驱动晶体管T1的第一极连接；所述第二开关晶体管T6的第一极与所述驱动晶体管T1的第二极连接，所述第二开关晶体管T6的第二极与所述发光器件D1的阳极连接。\n\n[0064]所述像素驱动电路还包括复位模块500，所述复位模块500用于响应第二扫描信号Scan2并将复位信号VI2传输至所述发光器件D1的阳极。\n\n[0065]具体地，请参阅图2A～图2B，所述复位模块500包括复位晶体管T7；所述第二扫描信号Scan2传输至所述复位晶体管T7的栅极，所述复位信号VI2传输至所述复位晶体管T7的第一极，所述复位晶体管T7的第二极与所述发光器件D1的阳极连接。\n\n[0066]其中，所述复位信号VI2为恒定信号；在所述发光阶段t3，可通过驱动芯片提供所需的所述电位可变信号VI1。\n\n[0067]所述复位晶体管T7与所述初始化晶体管T2的类型可以不同，也可相同。具体地，在图2A所示的像素驱动电路中，所述复位晶体管T7与所述初始化晶体管T2的类型不同；进一步地，所述复位晶体管T7与所述补偿晶体管T3的类型相同。而在图2B所示的像素驱动电路中，所述复位晶体管T7与所述初始化晶体管T2的类型相同；进一步地，所述复位晶体管T7与所述补偿晶体管T3的类型不同。\n\n[0068]所述发光器件D1包括有机发光二极管、次毫米发光二极管及微型发光二极管的其中一种。\n\n[0069]在图2A～图2B所示的像素驱动电路中，均以所述发光器件D1的阴极接第二电压端Vss为例；此外，所述发光器件D1亦可采用阳极接所述第一电压端Vdd的形式布置于所述像素驱动电路中，在此对其不再进行赘述。\n\n[0070]为区分晶体管中除栅极以外的源极与漏极，本申请的第一极可以为漏极或源极的一者，相应地，第二极为源极或漏极中的另一者。\n\n[0071]本申请还提供一种像素驱动电路的驱动方法，用于驱动所述像素驱动电路，在第N帧周期(N Frame)内，所述驱动方法包括：\n\n[0072]初始化阶段t1，所述补偿模块100的所述初始化晶体管T2响应第一扫描信号Scan1，所述电位可变信号VI1传输至所述驱动晶体管T1的栅极，初始化所述驱动晶体管T1的栅极电压Vg；\n\n[0073]补偿阶段t2，所述补偿模块100的所述补偿晶体管T3响应补偿控制信号Scan3，将具有补偿阈值电压的数据信号Vdata传输至所述驱动晶体管T1的栅极，补偿所述驱动晶体管T1的阈值电压；\n\n[0074]所述发光阶段t3，所述驱动晶体管T1驱动所述发光器件D1发光，所述电位可变信号VI1动态补偿所述驱动晶体管T1的栅极电压Vg。\n\n[0075]其中，所述电位可变信号VI1在所述初始化阶段t1和所述补偿阶段t2为恒定信号，所述电位可变信号VI1在所述发光阶段t3随补偿前的所述驱动晶体管T1的栅极电压Vg连续上升或连续下降。\n\n[0076]具体地，在所述发光阶段t3，由于所述驱动晶体管T1的栅极受所述驱动晶体管T1的源极或漏极(B点)的影响，所述驱动晶体管T1的栅极电压Vg会出现连续的变动，因此，为使所述驱动晶体管T1的栅极电压Vg维持稳定，在幅值上所述电位可变信号VI1与补偿前的所述驱动晶体管T1的栅极电压Vg成正比；在时序上，所述电位可变信号VI1随补偿前的所述驱动晶体管T1的栅极电压Vg的下降而连续上升，或随补偿前的所述驱动晶体管T1的栅极电压Vg的上升连续下降，以使所述驱动晶体管T1的栅极电压Vg在补偿后维持稳定。\n\n[0077]在所述发光阶段t3，可通过驱动芯片提供所需的所述电位可变信号VI1。所述复位信号VI2可与所述电位可变信号VI1在所述初始化阶段t1和所述补偿阶段t2时的幅值相等，也可不相等，在此对其不再进行赘述。\n\n[0078]下面将结合图2A～图2B及图3A～图3B详细描述利用所述驱动方法驱动所述像素驱动电路的工作原理。\n\n[0079]请继续参阅图2A与图3A，以所述驱动晶体管T1、所述补偿晶体管T3、所述数据写入晶体管T4、所述第一开关晶体管T5、所述第二开关晶体管T6及所述复位晶体管T7为P型硅晶体管、所述初始化晶体管T2为N型氧化物晶体管；所述补偿晶体管T3与所述数据写入晶体管T4共用所述第二扫描信号Scan2为例；在第N帧周期(N Frame)内，包括所述初始化阶段t1、所述补偿阶段t2及所述发光阶段t3；\n\n[0080]在所述初始化阶段t1：所述初始化晶体管T2响应所述第一扫描信号Scan1，所述初始化晶体管T2导通，所述电位可变信号VI1传输至所述驱动晶体管T1的栅极；所述存储电容C1下极板接入所述电位可变信号VI1，所述存储电容C1的上极板与下极板之间电压差变大，所述存储电容C1充电，所述驱动晶体管T1的栅极电压Vg被所述电位可变信号VI1复位至低电平信号Vini，所述驱动晶体管T1导通，实现所述驱动晶体管T1的初始化。\n\n[0081]在所述补偿阶段t2：所述补偿晶体管T3、所述数据写入晶体管T4及所述复位晶体管T7响应所述第二扫描信号Scan2导通，所述数据信号Vdata传输至所述驱动晶体管T1的第一极(A点)；所述补偿晶体管T3导通使得所述驱动晶体管T1的栅极与第二极连接，具有补偿阈值电压Vth作用的所述数据信号Vdata被传输至所述驱动晶体管T1的栅极，所述存储电容C1的存在使得所述驱动晶体管T1的栅极电压Vg由Vini逐渐抬升直至使所述驱动晶体管T1充分导通，所述存储电容C1维持所述驱动晶体管T1的栅极电压Vg，从而实现对所述驱动晶体管T1的阈值电压Vth的补偿；所述复位晶体管T7的导通使得所述复位信号VI2被传输至所述发光器件D1的阳极，实现对所述发光器件D1的初始化。\n\n[0082]在所述发光阶段t3：所述第一开关晶体管T5和所述第二开关晶体管T6响应所述发光控制信号EM导通，所述驱动晶体管T1形成驱动电流驱动所述发光器件D1发光；利用处于截止状态的所述补偿晶体管T3降低所述驱动晶体管T1的第二极(B点)对所述驱动晶体管T1栅极(Q点)电压Vg的影响，利用处于截止状态的所述初始化晶体管T2的漏电流特性及所述电位可变信号VI1动态补偿因所述补偿晶体管T3的漏电流造成的对所述驱动晶体管T1的栅极电压Vg的影响，以使所述驱动晶体管T1的栅极电压Vg保持稳定；即Vg保持在Vdata+Vth，保证所述发光器件D1的稳定发光。\n\n[0083]与之相似地，请继续参阅图2B与图3B，以所述驱动晶体管T1、所述初始化晶体管T2、所述数据写入晶体管T4、所述第一开关晶体管T5、所述第二开关晶体管T6及所述复位晶体管T7为P型硅晶体管、所述补偿晶体管T3为N型氧化物晶体管；在第N帧周期(N Frame)内，包括所述初始化阶段t1、所述补偿阶段t2及所述发光阶段t3；\n\n[0084]在所述初始化阶段t1：所述初始化晶体管T2响应所述第一扫描信号Scan1，所述初始化晶体管T2导通，所述电位可变信号VI1传输至所述驱动晶体管T1的栅极；所述存储电容C1充电，所述驱动晶体管T1的栅极电压Vg被所述电位可变信号VI1复位至低电平信号Vini，所述驱动晶体管T1导通，实现所述驱动晶体管T1的初始化。\n\n[0085]在所述补偿阶段t2：所述补偿晶体管T3响应所述补偿控制信号Scan3导通，所述数据写入晶体管T4及所述复位晶体管T7响应所述第二扫描信号Scan2导通，所述数据信号Vdata传输至所述驱动晶体管T1的第一极(A点)；所述补偿晶体管T3导通使得所述驱动晶体管T1的栅极与第二极连接，具有补偿阈值电压Vth作用的所述数据信号Vdata被传输至所述驱动晶体管T1的栅极，所述存储电容C1的存在使得所述驱动晶体管T1的栅极电压Vg由Vini逐渐抬升直至使所述驱动晶体管T1充分导通，所述存储电容C1维持所述驱动晶体管T1的栅极电压Vg，从而实现对所述驱动晶体管T1的阈值电压Vth的补偿；所述复位晶体管T7的导通使得所述复位信号VI2被传输至所述发光器件D1的阳极，实现对所述发光器件D1的初始化。\n\n[0086]在所述发光阶段t3：所述第一开关晶体管T5和所述第二开关晶体管T6响应所述发光控制信号EM导通，所述驱动晶体管T1形成驱动电流驱动所述发光器件D1发光；利用处于截止状态的所述补偿晶体管T3降低所述驱动晶体管T1的第二极(B点)对所述驱动晶体管T1栅极(Q点)电压Vg的影响，利用处于截止状态的所述初始化晶体管T2的漏电流特性及所述电位可变信号VI1动态补偿因所述补偿晶体管T3的漏电流造成的对所述驱动晶体管T1的栅极电压Vg的影响，以使所述驱动晶体管T1的栅极电压Vg保持稳定；即Vg保持在Vdata+Vth，保证所述发光器件D1的稳定发光。\n\n[0087]请继续参阅图2A～图2B和图3A～图3B，在所述发光阶段t3，由于所述第一开关晶体管T5导通，所述第一电压端Vdd将信号Vdd1传输至所述驱动晶体管T1的第一极，所述驱动晶体管T1的栅极电压Vg与第一极(A点)电压之差Vgs等于Vg-Vdd1；因此，由Vg＝Vdata+Vth、Vgs＝Vg-Vdd1和驱动电流I＝(CoxμmW/L)*(Vgs-Vth)2/2(其中，Cox、μm、W、L分别为晶体管的单位面积沟道电容、沟道迁移率、沟道宽和沟道长)可得；所述驱动电流I＝(CoxμmW/L)*(Vg-Vdd1-Vg+Vdata)2/2＝(CoxμmW/L)*(Vdata-Vdd1)2/2；以此所述驱动电流I不受所述阈值电压Vth的变化的影响，保证所述发光器件D1发光的稳定性。\n\n[0088]所述电位可变信号VI1在所述初始化晶体管T2响应所述第一扫描信号Scan1、所述补偿晶体管T3响应所述补偿控制信号Scan3时为恒定低电平信号，在所述发光阶段t3为连续上升信号。\n\n[0089]在图2A～图2B所述的像素驱动电路中，均以所述驱动晶体管T1、所述数据写入晶体管T4、所述第一开关晶体管T5、所述第二开关晶体管T6及所述复位晶体管T7为P型晶体管为例进行说明，本领域的相关技术人员也可将其替换为N型晶体管，并将相应的部分信号进行反相实现上述功能，在此对其不再进行赘述。\n\n[0090]请参阅图4A～图4C，其为本申请的实施例提供的显示面板的结构示意图；如图5A～图5B，其为本申请的实施例提供的像素驱动电路的结构示意图。\n\n[0091]本申请还提供一种显示面板，包括：多个像素600及控制所述像素600发光的像素驱动电路；所述像素驱动电路包括：形成所述像素600的发光器件D1，被配置为向所述发光器件D1提供驱动电流的驱动晶体管T1，用于提供电位可变信号VI1的电位可变信号线VI11，初始化晶体管T2，以及，补偿晶体管T3；所述初始化晶体管T2和补偿晶体管T3具有不同材料的半导体层；\n\n[0092]所述补偿晶体管T3的栅极与补偿控制信号线S3连接，所述补偿晶体管T3的源极或漏极中的一者与所述驱动晶体管T1的栅极连接，源极或漏极中的另一者与所述驱动晶体管T1的源极或漏极中的一者连接；\n\n[0093]所述初始化晶体管T2的栅极与第一扫描信号线S1连接，所述初始化晶体管T2的源极或漏极中的一者与所述电位可变信号线VI11连接，源极或漏极中的另一者与所述驱动晶体管T1的栅极连接。\n\n[0094]其中，所述初始化晶体管T2和所述补偿晶体管T3的所述半导体层601和602的载流子迁移率不同；所述初始化晶体管T2的所述半导体层601的载流子迁移率大于所述补偿晶体管T3的所述半导体层602的载流子迁移率；或，所述初始化晶体管T2的所述半导体层601的载流子迁移率小于所述补偿晶体管T3的所述半导体层602的载流子迁移率。\n\n[0095]进一步地，所述初始化晶体管T2和所述补偿晶体管T3的所述半导体层601和602包括P型晶体管半导体或N型晶体管半导体。\n\n[0096]进一步地，所述初始化晶体管T2的所述半导体层601包括硅半导体层或氧化物半导体层的其中之一，所述补偿晶体管T3的所述半导体层602包括硅半导体层或氧化物半导体层的其中另一。\n\n[0097]请继续参阅图5A～图5B，在一些实施例中，所述像素驱动电路还包括：\n\n[0098]数据写入晶体管T4，所述数据写入晶体管T4的栅极与第二扫描信号线S2连接，所述数据写入晶体管T4的源极或漏极中的一者与数据信号线Data连接，源极或漏极中的另一者与所述驱动晶体管T1的源极或漏极中的一者连接；\n\n[0099]存储电容C1，所述存储电容C1的上极板与第一电压端Vdd连接，下极板与所述初始化晶体管T2的源极或漏极中连接所述驱动晶体管T1栅极的一者、所述补偿晶体管T3的源极或漏极中连接所述驱动晶体管T1栅极的一者及所述驱动晶体管T1的栅极连接。\n\n[0100]所述像素驱动电路还包括：第一开关晶体管T5，所述第一开关晶体管T5的栅极与发光控制信号线EM1连接，所述第一开关晶体管T5的源极或漏极中的一者与第一电压端Vdd连接，源极或漏极中的另一者与所述驱动晶体管T1的源极或漏极中的一者连接；\n\n[0101]第二开关晶体管T6，所述第二开关晶体管T6的栅极与所述发光控制信号线EM1连接，所述第二开关晶体管T6的源极或漏极中的一者所述驱动晶体管T1的源极或漏极中的一者连接，源极或漏极中的另一者与所述发光器件D1的阳极连接。\n\n[0102]所述像素驱动电路还包括：复位晶体管T7，所述复位晶体管T7的栅极与第二扫描信号线S2连接，所述复位晶体管T7的源极或漏极中的一者与复位信号线VI12连接，源极或漏极中的另一者与所述发光器件D1的阳极连接。\n\n[0103]进一步地，所述复位晶体管T7与所述初始化晶体管T2可以具有不同材料的半导体层，也可具有相同材料的半导体层，如图5A和图5B所示。在如图5A所示的像素驱动电路中，所述复位晶体管T7与所述初始化晶体管T2具有不同材料的半导体层；进一步地，所述复位晶体管T7与所述补偿晶体管T3具有相同材料的半导体层。而在如图5B所示的像素驱动电路中，所述复位晶体管T7与所述初始化晶体管T2具有相同材料的半导体层；进一步地，所述复位晶体管T7与所述补偿晶体管T3具有不同材料的半导体层。\n\n[0104]其中，在如图5A所示的所示像素驱动电路中，所述补偿晶体管T3可与所述补偿控制信号线S3连接，也可与所述第二扫描信号线S2连接，以降低制程难度。\n\n[0105]在如图5A～图5B所示的像素驱动电路中均以所述驱动晶体管T1、所述数据写入晶体管T4、所述第一开关晶体管T5、所述第二开关晶体管T6及所述复位晶体管T7为P型晶体管为例，本领域的相关技术人员也可用N型晶体管实现，在此对其不再进行赘述。\n\n[0106]在所述显示面板的所述像素驱动电路中，均以所述发光器件D1采用共阴极接法(即所述发光器件D1的阴极接第二电压端Vss)为例，本领域相关技术人员亦可采用共阳极接法(即所述发光器件D1的阳极接所述第一电压端Vdd)，在此对其不再进行赘述。\n\n[0107]请继续参阅图4A～图4C，所述显示面板还包括衬底700，所述像素驱动电路位于所述衬底700上，所述发光器件D1位于所述像素驱动电路远离所述衬底700的一侧。\n\n[0108]所述衬底700包括柔性衬底与刚性衬底；所述衬底700的制备材料包括玻璃、石英、陶瓷、塑料或聚合物树脂等；聚合物树脂包括聚醚砜、聚丙烯酸酯、聚芳酯、聚醚酰亚胺、聚萘二甲酸乙二醇酯、聚对苯二甲酸乙二醇酯、聚苯硫醚、聚烯丙基酯、聚酰亚胺、聚碳酸酯、三乙酸纤维素、醋酸丙酸纤维素中的至少一种。\n\n[0109]所述显示面板还包括：\n\n[0110]第一半导体层701，形成于所述衬底700上，所述第一半导体层701包括源极区701a，沟道区701b，漏极区701c；所述第一半导体层701的衬底材料可以为N型或者P型硅半导体。\n\n[0111]第一绝缘层702，覆盖所述衬底700及所述第一半导体层701，所述第一绝缘层702的制备材料包括氮化硅、氧化硅、氧氮化硅、氧化铝、氧化钽、氧化铪、氧化锆或氧化钛中的至少一种。\n\n[0112]第一栅极703，形成于所述第一绝缘层702远离所述第一半导体层701的一侧，且与所述第一半导体层701对位设置，所述第一栅极703与所述源极区701a、所述沟道区701b、所述漏极区701c构成硅晶体管的源极、栅极与漏极，所述第一栅极703的制备材料包括钼、铝、银、镁、金、镍、钛、钽、钨(W)等中的至少一种。进一步的，所述第一栅极703的制备材料为钼。\n\n[0113]第二绝缘层704，形成于所述第一栅极703远离所述衬底700的一侧，所述第二绝缘层704的制备材料包括氮化硅、氧化硅、氧氮化硅、氧化铝、氧化钽、氧化铪、氧化锆或氧化钛中的至少一种。\n\n[0114]第二栅极层，形成于所述第二绝缘层704远离所述第一栅极703的一侧，所述第二栅极层包括与所述第一栅极703对位设置的第二栅极7051以及远离所述第二栅极7051设置的第三栅极7052；所述第二栅极7051与所述第一栅极703构成所述像素驱动电路中的所述存储电容C1的上极板与下极板。所述第二栅极层的制备材料包括钼、铝、银、镁、金、镍、钛、钽、钨(W)等中的至少一种。进一步的，所述第二栅极层的制备材料为钼。\n\n[0115]第三绝缘层706，形成于所述第二栅极层远离所述衬底700的一侧，所述第三绝缘层706的制备材料包括氮化硅、氧化硅、氧氮化硅、氧化铝、氧化钽、氧化铪、氧化锆或氧化钛中的至少一种。\n\n[0116]第二半导体层707，位于所述第三绝缘层706远离所述衬底700的一侧，所述第二半导体层707包括源极区707a，沟道区707b，漏极区707c；所述第二半导体层707的材料为氧化物半导体，所述氧化物半导体可包括锌、铟、镓、锡或钛的金属的氧化物中的至少一种；进一步地，所述氧化物半导体可包括氧化锌、氧化锌锡、氧化锌铟、氧化铟、氧化钛、氧化铟镓锌、氧化铟锌锡等中的至少一种。\n\n[0117]第四绝缘层708，形成于所述第二半导体层707远离所述衬底700的一侧，所述第四绝缘层708的制备材料包括氮化硅、氧化硅、氧氮化硅、氧化铝、氧化钽、氧化铪、氧化锆或氧化钛中的至少一种。\n\n[0118]第四栅极709，形成于所述第四绝缘层708远离所述第二半导体层707的一侧，且与所述第三栅极7052对位设置；所述第四栅极709与所述第二半导体层707的所述源极区707a、所述沟道区707b、所述漏极区707c形成氧化物晶体管的源极、栅极、漏极，其中第三栅极7052构成氧化物晶体管中的底栅部分。所述第四栅极709的制备材料包括钼、铝、银、镁、金、镍、钛、钽、钨(W)等中的至少一种。进一步的，所述第四栅极709的制备材料为钼。\n\n[0119]第五绝缘层710，形成于所述第四栅极709远离所述衬底700的一侧，所述第五绝缘层710的制备材料包括氮化硅、氧化硅、氧氮化硅、氧化铝、氧化钽、氧化铪、氧化锆或氧化钛中的至少一种。\n\n[0120]第一金属层711，形成于所述第五绝缘层710远离所述衬底700的一侧，所述第一金属层711通过过孔与所述硅晶体管、所述氧化物晶体管的栅极、源极、漏极连接；所述第一金属层711的制备材料包括金、银、铜、锂、钠、钾、镁、铝、锌中的至少一种。\n\n[0121]第六绝缘层712，形成于所述第一金属层711远离所述衬底700的一侧，所述第六绝缘层712可以为采用有机材料或者无机材料及其混合物。\n\n[0122]阳极713，形成于所述第六绝缘层712远离所述衬底700的一侧，所述阳极713的制备材料包括氧化铟锡、氧化铟锡锌中的一种，或氧化铟锡、氧化铟锡锌与银的组合，所述阳极713通过过孔与所述第一金属层711电性连接。\n\n[0123]像素定义层716，形成于所述阳极713远离所述衬底700的一侧，所述像素定义层716的开孔形状与所述像素600的图案一致。\n\n[0124]发光层715，通过所述像素定义层716上的所述开孔与所述阳极713接触，所述发光层715包括有机发光材料；进一步地，所述发光层715还包括荧光材料、量子点材料、钙钛矿材料中的至少一种。\n\n[0125]阴极714，位于所述发光层715及所述像素定义层716远离所述阳极713的一侧；所述阳极713，所述阴极714及位于所述阳极713和所述阴极714之间的所述发光层715形成所述发光器件D1。\n\n[0126]封装层719，位于所述发光器件D1远离所述衬底700的一侧，所述封装层719的制备材料包括有机材料与无机材料的组合。\n\n[0127]在垂直于所述衬底700的方向上，所述第一半导体层701、所述第一绝缘层702、所述第一栅极703、所述第二绝缘层704、所述第二栅极层、所述第三绝缘层706、所述第二半导体层707、所述第四绝缘层708、所述第四栅极709、所述第五绝缘层710及第一金属层711形成所述像素驱动电路。\n\n[0128]为避免所述封装层719中的氢元素与氧元素对所述氧化物晶体管造成影响，所述显示面板还包括位于所述像素驱动电路与所述发光器件D1之间的导电层720，在俯视视角下，所述导电层720与所述氧化物晶体管的正投影重合，且所述导电层720覆盖所述氧化物晶体管，如图4B所示。进一步地，若所述初始化晶体管T2为氧化物晶体管，所述导电层720与所述初始化晶体管T2的正投影重合，且所述导电层720覆盖所述初始化晶体管T2；与之相似地，若所述补偿晶体管T3为氧化物晶体管，所述导电层720与所述补偿晶体管T3的正投影重合，且所述导电层720覆盖所述补偿晶体管T3。\n\n[0129]具体地，所述显示面板还包括第七绝缘层717，所述第七绝缘层717位于所述导电层720靠近所述衬底700的一侧，所述导电层720位于所述第六绝缘层712与所述第七绝缘层717之间，所述导电层720通过所述第七绝缘层717的开孔与第一金属层711连接，所述导电层720的制备材料包括金、银、铜、锂、钠、钾、镁、铝、锌中的至少一种；所述第七绝缘层717的制备材料包括有机材料或者无机材料及其混合物。\n\n[0130]请继续参与图4A～图4B，所述显示面板还包括缓冲层718，所述缓冲层718的制备材料包括有机材料与无机材料及其组合；具体地，缓冲层718的制备材料包括氮化硅、氧化硅、氮氧化硅等。\n\n[0131]请继续参阅图4C，所述在俯视视角下，多个所述像素600分别与所述电位可变信号线VI11和所述复位信号线VI12连接。\n\n[0132]所述电位可变信号线VI11可位于所述显示面板的左右边框区域并从所述左右边框区域向所述显示面板的显示区延伸，所述复位信号线VI12可位于所述显示面板的下边框区域并从所述下边框区域向所述显示面板的显示区延伸。\n\n[0133]由于所述复位信号线VI12可与驱动芯片连接，利用所述驱动芯片提供所需的所述电位可变信号VI1，所以为降低对所述显示面板的左右边框的影响，所述电位可变信号线VI11可位于所述显示面板的下边框区域并从所述下边框区域向所述显示面板的显示区延伸，所述复位信号线VI12可位于所述显示面板的左右边框区域并从所述左右边框区域向所述显示面板的显示区延伸。\n\n[0134]进一步地，所述显示面板还可包括彩色滤光片、触控电极等未示出部分。\n\n[0135]本申请实施例提供的像素驱动电路及其驱动方法、显示面板，所述像素驱动电路包括：发光器件D1、驱动晶体管T1以及补偿模块100；所述补偿模块100至少包括：初始化晶体管T2及补偿晶体管T3；所述初始化晶体管T2用于响应第一扫描信号Scan1并将电位可变信号VI1传输至所述驱动晶体管T1的栅极，初始化所述驱动晶体管T1的栅极电压Vg；所述补偿晶体管T3用于响应补偿控制信号Scan3并将具有补偿阈值电压的数据信号Vdata传输至所述驱动晶体管T1的栅极；其中，所述初始化晶体管T2与所述补偿晶体管T3的类型不同；所述电位可变信号VI1在发光阶段动态补偿所述驱动晶体管T1的栅极电压Vg，以在所述发光阶段t3维持所述驱动晶体管T1的栅极电压Vg稳定，降低所述驱动晶体管T1的源极或漏极对所述驱动晶体管T1栅极的影响，可以改善显示面板的显示效果。\n\n[0136]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0137]以上对本申请实施例所提供的像素驱动电路及显示面板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。', '技术领域\n\n[0001]本申请涉及显示技术领域，尤其涉及一种像素驱动电路及显示面板。\n\n背景技术\n\n[0002]采用低温多晶硅技术制成的背板虽然可以使显示面板达到较高的像素密度，但由于硅类晶体管的漏电流较大，在显示面板使用低刷新频率时，显示面板的显示效果较差，影响显示品质。\n\n实用新型内容\n\n[0003]本申请实施例提供一种像素驱动电路及显示面板，可以维持驱动晶体管的栅极电压稳定，降低所述驱动晶体管的源极或漏极对所述驱动晶体管栅极的影响，改善显示面板的显示效果。\n\n[0004]本申请实施例提供一种像素驱动电路，包括：发光器件、驱动晶体管以及补偿模块；所述补偿模块至少包括：初始化晶体管及补偿晶体管；\n\n[0005]所述初始化晶体管用于响应第一扫描信号并将电位可变信号传输至所述驱动晶体管的栅极，初始化所述驱动晶体管的栅极电压；\n\n[0006]所述补偿晶体管用于响应补偿控制信号并将具有补偿阈值电压的数据信号传输至所述驱动晶体管的栅极；\n\n[0007]其中，所述初始化晶体管与所述补偿晶体管的类型不同；所述电位可变信号在发光阶段动态补偿所述驱动晶体管的栅极电压。\n\n[0008]在一些实施例中，所述初始化晶体管为硅晶体管或氧化物晶体管的其中之一，所述补偿晶体管为硅晶体管或氧化物晶体管的其中另一。\n\n[0009]在一些实施例中，所述初始化晶体管为硅晶体管，所述补偿晶体管为氧化物晶体管。\n\n[0010]在一些实施例中，所述初始化晶体管为P型晶体管；所述补偿晶体管为N型晶体管。\n\n[0011]在一些实施例中，所述电位可变信号在所述初始化晶体管响应所述第一扫描信号、所述补偿晶体管响应所述补偿控制信号时为恒定低电平信号，在所述发光阶段为连续上升信号。\n\n[0012]在一些实施例中，所述像素驱动电路还包括数据写入模块，所述数据写入模块用于响应第二扫描信号并将所述数据信号传输至所述驱动晶体管的源极或漏极。\n\n[0013]在一些实施例中，所述像素驱动电路还包括存储模块，所述存储模块用于维持所述驱动晶体管的栅极电压。\n\n[0014]在一些实施例中，所述像素驱动电路还包括发光控制模块，所述发光控制模块用于响应发光控制信号控制所述发光器件发光。\n\n[0015]在一些实施例中，所述像素驱动电路还包括复位模块，所述复位模块用于响应第二扫描信号并将复位信号传输至所述发光器件的阳极。\n\n[0016]在一些实施例中，所述复位信号为恒定信号。\n\n[0017]在一些实施例中，所述发光器件包括有机发光二极管、次毫米发光二极管及微型发光二极管的其中一种。\n\n[0018]本申请还提供一种显示面板，包括：多个像素及控制所述像素发光的像素驱动电路；所述像素驱动电路包括：形成所述像素的发光器件，被配置为向所述发光器件提供驱动电流的驱动晶体管，用于提供电位可变信号的电位可变信号线，初始化晶体管，以及，补偿晶体管；所述初始化晶体管和补偿晶体管具有不同材料的半导体层；\n\n[0019]所述补偿晶体管的栅极与补偿控制信号线连接，所述补偿晶体管的源极或漏极中的一者与所述驱动晶体管的栅极连接，源极或漏极中的另一者与所述驱动晶体管的源极或漏极中的一者连接；\n\n[0020]所述初始化晶体管的栅极与第一扫描信号线连接，所述初始化晶体管的源极或漏极中的一者与电位可变信号线连接，源极或漏极中的另一者与所述驱动晶体管的栅极连接。\n\n[0021]在一些实施例中，所述初始化晶体管和所述补偿晶体管的所述半导体层的载流子迁移率不同；所述初始化晶体管的所述半导体层的载流子迁移率大于所述补偿晶体管的所述半导体层的载流子迁移率；或，所述初始化晶体管的所述半导体层的载流子迁移率小于所述补偿晶体管的所述半导体层的载流子迁移率。\n\n[0022]在一些实施例中，所述像素驱动电路还包括：\n\n[0023]数据写入晶体管，所述数据写入晶体管的栅极与第二扫描信号线连接，所述数据写入晶体管的源极或漏极中的一者与数据信号线连接，源极或漏极中的另一者与所述驱动晶体管的源极或漏极中的一者连接；\n\n[0024]存储电容，所述存储电容的上极板与第一电压端连接，下极板与所述初始化晶体管的源极或漏极中连接所述驱动晶体管栅极的一者、所述补偿晶体管的源极或漏极中连接所述驱动晶体管栅极的一者及所述驱动晶体管的栅极连接。\n\n[0025]在一些实施例中，所述像素驱动电路还包括：\n\n[0026]第一开关晶体管，所述第一开关晶体管的栅极与发光控制信号线连接，所述第一开关晶体管的源极或漏极中的一者与第一电压端连接，源极或漏极中的另一者与所述驱动晶体管的源极或漏极中的一者连接；\n\n[0027]第二开关晶体管，所述第二开关晶体管的栅极与所述发光控制信号线连接，所述第二开关晶体管的源极或漏极中的一者所述驱动晶体管的源极或漏极中的一者连接，源极或漏极中的另一者与所述发光器件的阳极连接。\n\n[0028]在一些实施例中，所述像素驱动电路还包括：\n\n[0029]复位晶体管，所述复位晶体管的栅极与第二扫描信号线连接，所述复位晶体管的源极或漏极中的一者与复位信号线连接，源极或漏极中的另一者与所述发光器件的阳极连接，所述复位晶体管与所述初始化晶体管具有相同材料的半导体层。\n\n[0030]在一些实施例中，所述显示面板还包括位于所述像素驱动电路与所述发光器件之间的导电层，在俯视视角下，所述导电层与所述补偿晶体管的正投影重合，且所述导电层覆盖所述补偿晶体管。\n\n[0031]在一些实施例中，所述导电层的制备材料包括金、银、铜、锂、钠、钾、镁、铝、锌中的至少一种。\n\n[0032]本申请实施例提供的像素驱动电路及显示面板，所述像素驱动电路包括：发光器件、驱动晶体管以及补偿模块；所述补偿模块至少包括：初始化晶体管及补偿晶体管；所述初始化晶体管用于响应第一扫描信号并将电位可变信号传输至所述驱动晶体管的栅极，初始化所述驱动晶体管的栅极电压；所述补偿晶体管用于响应补偿控制信号并将具有补偿阈值电压的数据信号传输至所述驱动晶体管的栅极；其中，所述初始化晶体管与所述补偿晶体管的类型不同；所述电位可变信号在发光阶段动态补偿所述驱动晶体管的栅极电压，以在所述发光阶段维持所述驱动晶体管的栅极电压稳定，降低所述驱动晶体管的源极或漏极对所述驱动晶体管栅极的影响，可以改善显示面板的显示效果。\n\n附图说明\n\n[0033]下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。\n\n[0034]图1为本申请的实施例提供的像素驱动电路的原理图；\n\n[0035]图2A～图2B为本申请的实施例提供的像素驱动电路的结构示意图；\n\n[0036]图3A为图2A提供的像素驱动电路的工作时序图；\n\n[0037]图3B为图2B提供的像素驱动电路的工作时序图；\n\n[0038]图3C为本申请的实施例提供的电位可变信号及驱动晶体管栅极电压的工作时序图；\n\n[0039]图4A～图4C为本申请的实施例提供的显示面板的结构示意图；\n\n[0040]图5A～图5B为本申请的实施例提供的像素驱动电路的结构示意图。\n\n具体实施方式\n\n[0041]下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0042]在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。\n\n[0043]在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。\n\n[0044]在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。\n\n[0045]下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。\n\n[0046]具体的，请参阅图1，其为本申请的实施例提供的像素驱动电路的原理图，如图2A～图2B，其为本申请的实施例提供的像素驱动电路的结构示意图；如图3A，其为图2A提供的像素驱动电路的工作时序图；如图3B，其为图2B提供的像素驱动电路的工作时序图；如图3C，其为本申请的实施例提供的电位可变信号及驱动晶体管栅极电压的工作时序图。\n\n[0047]本申请实施例提供一种像素驱动电路，包括：发光器件D1、驱动晶体管T1以及补偿模块100；所述补偿模块100至少包括：初始化晶体管T2及补偿晶体管T3；\n\n[0048]所述初始化晶体管T2用于响应第一扫描信号Scan1并将电位可变信号VI1传输至所述驱动晶体管T1的栅极，初始化所述驱动晶体管T1的栅极电压Vg；\n\n[0049]所述补偿晶体管T3用于响应补偿控制信号Scan3并将具有补偿阈值电压的数据信号Vdata传输至所述驱动晶体管T1的栅极；\n\n[0050]其中，所述初始化晶体管T2与所述补偿晶体管T3的类型不同；所述电位可变信号VI1在发光阶段t3动态补偿所述驱动晶体管T1的栅极电压Vg，以在所述发光阶段t3维持所述驱动晶体管T1的栅极电压Vg稳定，降低所述驱动晶体管T1的源极或漏极对所述驱动晶体管T1栅极的影响。\n\n[0051]进一步地，所述初始化晶体管T2为硅晶体管或氧化物晶体管的其中之一，所述补偿晶体管T3为硅晶体管或氧化物晶体管的其中另一。\n\n[0052]具体地，请继续参阅图2A～图2B及图3A～图3B，在所述发光阶段t3，利用所述补偿晶体管T3可减小所述驱动晶体管T1的源极或漏极(B点)中的一者对所述驱动晶体管T1栅极(Q点)电压Vg的影响。但所述补偿晶体管T3会存在一定的漏电流，为降低所述补偿晶体管T3的漏电流对所述驱动晶体管T1的影响，利用所述初始化晶体管T2的漏电流特性及所述电位可变信号VI1动态补偿因所述补偿晶体管T3的漏电流造成的对所述驱动晶体管T1的栅极电压Vg的影响，以使所述驱动晶体管T1的栅极电压Vg保持恒定，保证所述发光器件D1的稳定发光。更进一步地，可保证所述发光器件D1在任何刷新频率下均可实现稳定发光。\n\n[0053]更进一步地，所述初始化晶体管T2为氧化物晶体管，所述补偿晶体管T3为硅晶体管；但由于硅晶体管的漏电流要大于氧化物晶体管的漏电流，因此在所述初始化晶体管T2为氧化物晶体管，所述补偿晶体管T3为硅晶体管时，所述补偿晶体管T3的漏电流要大于所述初始化晶体管T2的漏电流，影响所述电位可变信号VI1对所述驱动晶体管T1的栅极电压Vg的补偿效果。\n\n[0054]因此，为提高对所述驱动晶体管T1的栅极电压Vg的补偿效果，所述初始化晶体管T2为硅晶体管，所述补偿晶体管T3为氧化物晶体管，利用所述补偿晶体管T3的漏电流小于所述初始化晶体管T2的漏电流的特性，降低所述驱动晶体管T1的源极或漏极(B点)中的一者对所述驱动晶体管T1栅极(Q点)电压Vg的影响，利用所述初始化晶体管T2具有较大的漏电流的特性，通过所述电位可变信号VI1降低所述补偿晶体管T3的漏电流对所述驱动晶体管T1的影响，以使所述驱动晶体管T1的栅极电压Vg保持恒定，保证所述发光器件D1的稳定发光。\n\n[0055]所述初始化晶体管T2及所述补偿晶体管T3可以为P型晶体管，也可为N型晶体管；进一步地，由于P型氧化物晶体管受目前P型氧化物材料的制约，制备出高质量的P型氧化物晶体管也受到制约，因此，在考虑现有技术的基础上，当所述初始化晶体管T2或所述补偿晶体管T3为氧化物晶体管时，选用N型氧化物晶体管。但在此并不用于限制本申请中的所述氧化物晶体管为N型晶体管，在本申请中所述氧化物晶体管也可为P型晶体管。\n\n[0056]其中，所述硅晶体管包括单晶硅晶体管、多晶硅晶体管、微晶硅晶体管、非晶硅或其他含硅的晶体管；所述氧化物晶体管包括含锌、铟、镓、锡或钛等金属及其氧化物的氧化物晶体管。进一步地，所述多晶硅晶体管包括低温多晶硅晶体管；所述氧化物晶体管包括含氧化锌、氧化锌锡、氧化锌铟、氧化铟、氧化钛、氧化铟镓锌、氧化铟锌锡等的氧化物晶体管。\n\n[0057]请继续参阅图1和图2A～图2B，所述像素驱动电路还包括数据写入模块200，所述数据写入模块200用于响应第二扫描信号Scan2并将所述数据信号Vdata传输至所述驱动晶体管T1的源极或漏极。\n\n[0058]其中，所述补偿晶体管T3采用与所述数据写入晶体管T4相同类型的晶体管时，所述补偿晶体管T3可直接利用所述第二扫描信号Scan2代替所述补偿控制信号Scan3。\n\n[0059]具体地，请参阅图2A～图2B，所述数据写入模块200包括数据写入晶体管T4，所述数据写入晶体管T4的栅极与所述第二扫描信号Scan2连接，所述数据信号Vdata传输至所述数据写入晶体管T4的第一极，所述数据写入晶体管T4的第二极与所述驱动晶体管T1的第一极连接。\n\n[0060]所述像素驱动电路还包括存储模块300，所述存储模块300用于维持所述驱动晶体管T1的栅极电压Vg。\n\n[0061]具体地，请参阅图2A～图2B，所述存储模块300包括存储电容C1，所述存储电容C1的一端与第一电压端Vdd连接，所述存储电容C1的另一端与所述驱动晶体管T1的栅极、所述初始化晶体管T2的第二极、所述补偿晶体管T3的第一极连接。具体地，所述存储电容C1的上极板与所述第一电压端Vdd连接，所述存储电容C2的下极板与所述驱动晶体管T1的栅极、所述初始化晶体管T2的第二极、所述补偿晶体管T3的第一极连接。\n\n[0062]所述像素驱动电路还包括发光控制模块400，所述发光控制模块400用于响应发光控制信号EM控制所述发光器件D1发光。\n\n[0063]具体地，请参阅图2A～图2B，所述发光控制模块400包括第一开关晶体管T5和第二开关晶体管T6；所述发光控制信号EM传输至所述第一开关晶体管T5的栅极与所述第二开关晶体管T6的栅极，所述第一开关晶体管T5的第一极与所述第一电压端Vdd连接，所述第一开关晶体管T5的第二极与所述驱动晶体管T1的第一极连接；所述第二开关晶体管T6的第一极与所述驱动晶体管T1的第二极连接，所述第二开关晶体管T6的第二极与所述发光器件D1的阳极连接。\n\n[0064]所述像素驱动电路还包括复位模块500，所述复位模块500用于响应第二扫描信号Scan2并将复位信号VI2传输至所述发光器件D1的阳极。\n\n[0065]具体地，请参阅图2A～图2B，所述复位模块500包括复位晶体管T7；所述第二扫描信号Scan2传输至所述复位晶体管T7的栅极，所述复位信号VI2传输至所述复位晶体管T7的第一极，所述复位晶体管T7的第二极与所述发光器件D1的阳极连接。\n\n[0066]其中，所述复位信号VI2为恒定信号；在所述发光阶段t3，可通过驱动芯片提供所需的所述电位可变信号VI1。\n\n[0067]所述复位晶体管T7与所述初始化晶体管T2的类型可以不同，也可相同。具体地，在图2A所示的像素驱动电路中，所述复位晶体管T7与所述初始化晶体管T2的类型不同；进一步地，所述复位晶体管T7与所述补偿晶体管T3的类型相同。而在图2B所示的像素驱动电路中，所述复位晶体管T7与所述初始化晶体管T2的类型相同；进一步地，所述复位晶体管T7与所述补偿晶体管T3的类型不同。\n\n[0068]所述发光器件D1包括有机发光二极管、次毫米发光二极管及微型发光二极管的其中一种。\n\n[0069]在图2A～图2B所示的像素驱动电路中，均以所述发光器件D1的阴极接第二电压端Vss为例；此外，所述发光器件D1亦可采用阳极接所述第一电压端Vdd的形式布置于所述像素驱动电路中，在此对其不再进行赘述。\n\n[0070]为区分晶体管中除栅极以外的源极与漏极，本申请的第一极可以为漏极或源极的一者，相应地，第二极为源极或漏极中的另一者。\n\n[0071]本申请还提供一种像素驱动电路的驱动方法，用于驱动所述像素驱动电路，在第N帧周期(N Frame)内，所述驱动方法包括：\n\n[0072]初始化阶段t1，所述补偿模块100的所述初始化晶体管T2响应第一扫描信号Scan1，所述电位可变信号VI1传输至所述驱动晶体管T1的栅极，初始化所述驱动晶体管T1的栅极电压Vg；\n\n[0073]补偿阶段t2，所述补偿模块100的所述补偿晶体管T3响应补偿控制信号Scan3，将具有补偿阈值电压的数据信号Vdata传输至所述驱动晶体管T1的栅极，补偿所述驱动晶体管T1的阈值电压；\n\n[0074]所述发光阶段t3，所述驱动晶体管T1驱动所述发光器件D1发光，所述电位可变信号VI1动态补偿所述驱动晶体管T1的栅极电压Vg。\n\n[0075]其中，所述电位可变信号VI1在所述初始化阶段t1和所述补偿阶段t2为恒定信号，所述电位可变信号VI1在所述发光阶段t3随补偿前的所述驱动晶体管T1的栅极电压Vg连续上升或连续下降。\n\n[0076]具体地，在所述发光阶段t3，由于所述驱动晶体管T1的栅极受所述驱动晶体管T1的源极或漏极(B点)的影响，所述驱动晶体管T1的栅极电压Vg会出现连续的变动，因此，为使所述驱动晶体管T1的栅极电压Vg维持稳定，在幅值上所述电位可变信号VI1与补偿前的所述驱动晶体管T1的栅极电压Vg成正比；在时序上，所述电位可变信号VI1随补偿前的所述驱动晶体管T1的栅极电压Vg的下降而连续上升，或随补偿前的所述驱动晶体管T1的栅极电压Vg的上升连续下降，以使所述驱动晶体管T1的栅极电压Vg在补偿后维持稳定。\n\n[0077]在所述发光阶段t3，可通过驱动芯片提供所需的所述电位可变信号VI1。所述复位信号VI2可与所述电位可变信号VI1在所述初始化阶段t1和所述补偿阶段t2时的幅值相等，也可不相等，在此对其不再进行赘述。\n\n[0078]下面将结合图2A～图2B及图3A～图3B详细描述利用所述驱动方法驱动所述像素驱动电路的工作原理。\n\n[0079]请继续参阅图2A与图3A，以所述驱动晶体管T1、所述补偿晶体管T3、所述数据写入晶体管T4、所述第一开关晶体管T5、所述第二开关晶体管T6及所述复位晶体管T7为P型硅晶体管、所述初始化晶体管T2为N型氧化物晶体管；所述补偿晶体管T3与所述数据写入晶体管T4共用所述第二扫描信号Scan2为例；在第N帧周期(N Frame)内，包括所述初始化阶段t1、所述补偿阶段t2及所述发光阶段t3；\n\n[0080]在所述初始化阶段t1：所述初始化晶体管T2响应所述第一扫描信号Scan1，所述初始化晶体管T2导通，所述电位可变信号VI1传输至所述驱动晶体管T1的栅极；所述存储电容C1下极板接入所述电位可变信号VI1，所述存储电容C1的上极板与下极板之间电压差变大，所述存储电容C1充电，所述驱动晶体管T1的栅极电压Vg被所述电位可变信号VI1复位至低电平信号Vini，所述驱动晶体管T1导通，实现所述驱动晶体管T1的初始化。\n\n[0081]在所述补偿阶段t2：所述补偿晶体管T3、所述数据写入晶体管T4及所述复位晶体管T7响应所述第二扫描信号Scan2导通，所述数据信号Vdata传输至所述驱动晶体管T1的第一极(A点)；所述补偿晶体管T3导通使得所述驱动晶体管T1的栅极与第二极连接，具有补偿阈值电压Vth作用的所述数据信号Vdata被传输至所述驱动晶体管T1的栅极，所述存储电容C1的存在使得所述驱动晶体管T1的栅极电压Vg由Vini逐渐抬升直至使所述驱动晶体管T1充分导通，所述存储电容C1维持所述驱动晶体管T1的栅极电压Vg，从而实现对所述驱动晶体管T1的阈值电压Vth的补偿；所述复位晶体管T7的导通使得所述复位信号VI2被传输至所述发光器件D1的阳极，实现对所述发光器件D1的初始化。\n\n[0082]在所述发光阶段t3：所述第一开关晶体管T5和所述第二开关晶体管T6响应所述发光控制信号EM导通，所述驱动晶体管T1形成驱动电流驱动所述发光器件D1发光；利用处于截止状态的所述补偿晶体管T3降低所述驱动晶体管T1的第二极(B点)对所述驱动晶体管T1栅极(Q点)电压Vg的影响，利用处于截止状态的所述初始化晶体管T2的漏电流特性及所述电位可变信号VI1动态补偿因所述补偿晶体管T3的漏电流造成的对所述驱动晶体管T1的栅极电压Vg的影响，以使所述驱动晶体管T1的栅极电压Vg保持稳定；即Vg保持在Vdata+Vth，保证所述发光器件D1的稳定发光。\n\n[0083]与之相似地，请继续参阅图2B与图3B，以所述驱动晶体管T1、所述初始化晶体管T2、所述数据写入晶体管T4、所述第一开关晶体管T5、所述第二开关晶体管T6及所述复位晶体管T7为P型硅晶体管、所述补偿晶体管T3为N型氧化物晶体管；在第N帧周期(N Frame)内，包括所述初始化阶段t1、所述补偿阶段t2及所述发光阶段t3；\n\n[0084]在所述初始化阶段t1：所述初始化晶体管T2响应所述第一扫描信号Scan1，所述初始化晶体管T2导通，所述电位可变信号VI1传输至所述驱动晶体管T1的栅极；所述存储电容C1充电，所述驱动晶体管T1的栅极电压Vg被所述电位可变信号VI1复位至低电平信号Vini，所述驱动晶体管T1导通，实现所述驱动晶体管T1的初始化。\n\n[0085]在所述补偿阶段t2：所述补偿晶体管T3响应所述补偿控制信号Scan3导通，所述数据写入晶体管T4及所述复位晶体管T7响应所述第二扫描信号Scan2导通，所述数据信号Vdata传输至所述驱动晶体管T1的第一极(A点)；所述补偿晶体管T3导通使得所述驱动晶体管T1的栅极与第二极连接，具有补偿阈值电压Vth作用的所述数据信号Vdata被传输至所述驱动晶体管T1的栅极，所述存储电容C1的存在使得所述驱动晶体管T1的栅极电压Vg由Vini逐渐抬升直至使所述驱动晶体管T1充分导通，所述存储电容C1维持所述驱动晶体管T1的栅极电压Vg，从而实现对所述驱动晶体管T1的阈值电压Vth的补偿；所述复位晶体管T7的导通使得所述复位信号VI2被传输至所述发光器件D1的阳极，实现对所述发光器件D1的初始化。\n\n[0086]在所述发光阶段t3：所述第一开关晶体管T5和所述第二开关晶体管T6响应所述发光控制信号EM导通，所述驱动晶体管T1形成驱动电流驱动所述发光器件D1发光；利用处于截止状态的所述补偿晶体管T3降低所述驱动晶体管T1的第二极(B点)对所述驱动晶体管T1栅极(Q点)电压Vg的影响，利用处于截止状态的所述初始化晶体管T2的漏电流特性及所述电位可变信号VI1动态补偿因所述补偿晶体管T3的漏电流造成的对所述驱动晶体管T1的栅极电压Vg的影响，以使所述驱动晶体管T1的栅极电压Vg保持稳定；即Vg保持在Vdata+Vth，保证所述发光器件D1的稳定发光。\n\n[0087]请继续参阅图2A～图2B和图3A～图3B，在所述发光阶段t3，由于所述第一开关晶体管T5导通，所述第一电压端Vdd将信号Vdd1传输至所述驱动晶体管T1的第一极，所述驱动晶体管T1的栅极电压Vg与第一极(A点)电压之差Vgs等于Vg-Vdd1；因此，由Vg＝Vdata+Vth、Vgs＝Vg-Vdd1和驱动电流I＝(CoxμmW/L)*(Vgs-Vth)2/2(其中，Cox、μm、W、L分别为晶体管的单位面积沟道电容、沟道迁移率、沟道宽和沟道长)可得；所述驱动电流I＝(CoxμmW/L)*(Vg-Vdd1-Vg+Vdata)2/2＝(CoxμmW/L)*(Vdata-Vdd1)2/2；以此所述驱动电流I不受所述阈值电压Vth的变化的影响，保证所述发光器件D1发光的稳定性。\n\n[0088]所述电位可变信号VI1在所述初始化晶体管T2响应所述第一扫描信号Scan1、所述补偿晶体管T3响应所述补偿控制信号Scan3时为恒定低电平信号，在所述发光阶段t3为连续上升信号。\n\n[0089]在图2A～图2B所述的像素驱动电路中，均以所述驱动晶体管T1、所述数据写入晶体管T4、所述第一开关晶体管T5、所述第二开关晶体管T6及所述复位晶体管T7为P型晶体管为例进行说明，本领域的相关技术人员也可将其替换为N型晶体管，并将相应的部分信号进行反相实现上述功能，在此对其不再进行赘述。\n\n[0090]请参阅图4A～图4C，其为本申请的实施例提供的显示面板的结构示意图；如图5A～图5B，其为本申请的实施例提供的像素驱动电路的结构示意图。\n\n[0091]本申请还提供一种显示面板，包括：多个像素600及控制所述像素600发光的像素驱动电路；所述像素驱动电路包括：形成所述像素600的发光器件D1，被配置为向所述发光器件D1提供驱动电流的驱动晶体管T1，用于提供电位可变信号VI1的电位可变信号线VI11，初始化晶体管T2，以及，补偿晶体管T3；所述初始化晶体管T2和补偿晶体管T3具有不同材料的半导体层；\n\n[0092]所述补偿晶体管T3的栅极与补偿控制信号线S3连接，所述补偿晶体管T3的源极或漏极中的一者与所述驱动晶体管T1的栅极连接，源极或漏极中的另一者与所述驱动晶体管T1的源极或漏极中的一者连接；\n\n[0093]所述初始化晶体管T2的栅极与第一扫描信号线S1连接，所述初始化晶体管T2的源极或漏极中的一者与所述电位可变信号线VI11连接，源极或漏极中的另一者与所述驱动晶体管T1的栅极连接。\n\n[0094]其中，所述初始化晶体管T2和所述补偿晶体管T3的所述半导体层601和602的载流子迁移率不同；所述初始化晶体管T2的所述半导体层601的载流子迁移率大于所述补偿晶体管T3的所述半导体层602的载流子迁移率；或，所述初始化晶体管T2的所述半导体层601的载流子迁移率小于所述补偿晶体管T3的所述半导体层602的载流子迁移率。\n\n[0095]进一步地，所述初始化晶体管T2和所述补偿晶体管T3的所述半导体层601和602包括P型晶体管半导体或N型晶体管半导体。\n\n[0096]进一步地，所述初始化晶体管T2的所述半导体层601包括硅半导体层或氧化物半导体层的其中之一，所述补偿晶体管T3的所述半导体层602包括硅半导体层或氧化物半导体层的其中另一。\n\n[0097]请继续参阅图5A～图5B，在一些实施例中，所述像素驱动电路还包括：\n\n[0098]数据写入晶体管T4，所述数据写入晶体管T4的栅极与第二扫描信号线S2连接，所述数据写入晶体管T4的源极或漏极中的一者与数据信号线Data连接，源极或漏极中的另一者与所述驱动晶体管T1的源极或漏极中的一者连接；\n\n[0099]存储电容C1，所述存储电容C1的上极板与第一电压端Vdd连接，下极板与所述初始化晶体管T2的源极或漏极中连接所述驱动晶体管T1栅极的一者、所述补偿晶体管T3的源极或漏极中连接所述驱动晶体管T1栅极的一者及所述驱动晶体管T1的栅极连接。\n\n[0100]所述像素驱动电路还包括：第一开关晶体管T5，所述第一开关晶体管T5的栅极与发光控制信号线EM1连接，所述第一开关晶体管T5的源极或漏极中的一者与第一电压端Vdd连接，源极或漏极中的另一者与所述驱动晶体管T1的源极或漏极中的一者连接；\n\n[0101]第二开关晶体管T6，所述第二开关晶体管T6的栅极与所述发光控制信号线EM1连接，所述第二开关晶体管T6的源极或漏极中的一者所述驱动晶体管T1的源极或漏极中的一者连接，源极或漏极中的另一者与所述发光器件D1的阳极连接。\n\n[0102]所述像素驱动电路还包括：复位晶体管T7，所述复位晶体管T7的栅极与第二扫描信号线S2连接，所述复位晶体管T7的源极或漏极中的一者与复位信号线VI12连接，源极或漏极中的另一者与所述发光器件D1的阳极连接。\n\n[0103]进一步地，所述复位晶体管T7与所述初始化晶体管T2可以具有不同材料的半导体层，也可具有相同材料的半导体层，如图5A和图5B所示。在如图5A所示的像素驱动电路中，所述复位晶体管T7与所述初始化晶体管T2具有不同材料的半导体层；进一步地，所述复位晶体管T7与所述补偿晶体管T3具有相同材料的半导体层。而在如图5B所示的像素驱动电路中，所述复位晶体管T7与所述初始化晶体管T2具有相同材料的半导体层；进一步地，所述复位晶体管T7与所述补偿晶体管T3具有不同材料的半导体层。\n\n[0104]其中，在如图5A所示的所示像素驱动电路中，所述补偿晶体管T3可与所述补偿控制信号线S3连接，也可与所述第二扫描信号线S2连接，以降低制程难度。\n\n[0105]在如图5A～图5B所示的像素驱动电路中均以所述驱动晶体管T1、所述数据写入晶体管T4、所述第一开关晶体管T5、所述第二开关晶体管T6及所述复位晶体管T7为P型晶体管为例，本领域的相关技术人员也可用N型晶体管实现，在此对其不再进行赘述。\n\n[0106]在所述显示面板的所述像素驱动电路中，均以所述发光器件D1采用共阴极接法(即所述发光器件D1的阴极接第二电压端Vss)为例，本领域相关技术人员亦可采用共阳极接法(即所述发光器件D1的阳极接所述第一电压端Vdd)，在此对其不再进行赘述。\n\n[0107]请继续参阅图4A～图4C，所述显示面板还包括衬底700，所述像素驱动电路位于所述衬底700上，所述发光器件D1位于所述像素驱动电路远离所述衬底700的一侧。\n\n[0108]所述衬底700包括柔性衬底与刚性衬底；所述衬底700的制备材料包括玻璃、石英、陶瓷、塑料或聚合物树脂等；聚合物树脂包括聚醚砜、聚丙烯酸酯、聚芳酯、聚醚酰亚胺、聚萘二甲酸乙二醇酯、聚对苯二甲酸乙二醇酯、聚苯硫醚、聚烯丙基酯、聚酰亚胺、聚碳酸酯、三乙酸纤维素、醋酸丙酸纤维素中的至少一种。\n\n[0109]所述显示面板还包括：\n\n[0110]第一半导体层701，形成于所述衬底700上，所述第一半导体层701包括源极区701a，沟道区701b，漏极区701c；所述第一半导体层701的衬底材料可以为N型或者P型硅半导体。\n\n[0111]第一绝缘层702，覆盖所述衬底700及所述第一半导体层701，所述第一绝缘层702的制备材料包括氮化硅、氧化硅、氧氮化硅、氧化铝、氧化钽、氧化铪、氧化锆或氧化钛中的至少一种。\n\n[0112]第一栅极703，形成于所述第一绝缘层702远离所述第一半导体层701的一侧，且与所述第一半导体层701对位设置，所述第一栅极703与所述源极区701a、所述沟道区701b、所述漏极区701c构成硅晶体管的源极、栅极与漏极，所述第一栅极703的制备材料包括钼、铝、银、镁、金、镍、钛、钽、钨(W)等中的至少一种。进一步的，所述第一栅极703的制备材料为钼。\n\n[0113]第二绝缘层704，形成于所述第一栅极703远离所述衬底700的一侧，所述第二绝缘层704的制备材料包括氮化硅、氧化硅、氧氮化硅、氧化铝、氧化钽、氧化铪、氧化锆或氧化钛中的至少一种。\n\n[0114]第二栅极层，形成于所述第二绝缘层704远离所述第一栅极703的一侧，所述第二栅极层包括与所述第一栅极703对位设置的第二栅极7051以及远离所述第二栅极7051设置的第三栅极7052；所述第二栅极7051与所述第一栅极703构成所述像素驱动电路中的所述存储电容C1的上极板与下极板。所述第二栅极层的制备材料包括钼、铝、银、镁、金、镍、钛、钽、钨(W)等中的至少一种。进一步的，所述第二栅极层的制备材料为钼。\n\n[0115]第三绝缘层706，形成于所述第二栅极层远离所述衬底700的一侧，所述第三绝缘层706的制备材料包括氮化硅、氧化硅、氧氮化硅、氧化铝、氧化钽、氧化铪、氧化锆或氧化钛中的至少一种。\n\n[0116]第二半导体层707，位于所述第三绝缘层706远离所述衬底700的一侧，所述第二半导体层707包括源极区707a，沟道区707b，漏极区707c；所述第二半导体层707的材料为氧化物半导体，所述氧化物半导体可包括锌、铟、镓、锡或钛的金属的氧化物中的至少一种；进一步地，所述氧化物半导体可包括氧化锌、氧化锌锡、氧化锌铟、氧化铟、氧化钛、氧化铟镓锌、氧化铟锌锡等中的至少一种。\n\n[0117]第四绝缘层708，形成于所述第二半导体层707远离所述衬底700的一侧，所述第四绝缘层708的制备材料包括氮化硅、氧化硅、氧氮化硅、氧化铝、氧化钽、氧化铪、氧化锆或氧化钛中的至少一种。\n\n[0118]第四栅极709，形成于所述第四绝缘层708远离所述第二半导体层707的一侧，且与所述第三栅极7052对位设置；所述第四栅极709与所述第二半导体层707的所述源极区707a、所述沟道区707b、所述漏极区707c形成氧化物晶体管的源极、栅极、漏极，其中第三栅极7052构成氧化物晶体管中的底栅部分。所述第四栅极709的制备材料包括钼、铝、银、镁、金、镍、钛、钽、钨(W)等中的至少一种。进一步的，所述第四栅极709的制备材料为钼。\n\n[0119]第五绝缘层710，形成于所述第四栅极709远离所述衬底700的一侧，所述第五绝缘层710的制备材料包括氮化硅、氧化硅、氧氮化硅、氧化铝、氧化钽、氧化铪、氧化锆或氧化钛中的至少一种。\n\n[0120]第一金属层711，形成于所述第五绝缘层710远离所述衬底700的一侧，所述第一金属层711通过过孔与所述硅晶体管、所述氧化物晶体管的栅极、源极、漏极连接；所述第一金属层711的制备材料包括金、银、铜、锂、钠、钾、镁、铝、锌中的至少一种。\n\n[0121]第六绝缘层712，形成于所述第一金属层711远离所述衬底700的一侧，所述第六绝缘层712可以为采用有机材料或者无机材料及其混合物。\n\n[0122]阳极713，形成于所述第六绝缘层712远离所述衬底700的一侧，所述阳极713的制备材料包括氧化铟锡、氧化铟锡锌中的一种，或氧化铟锡、氧化铟锡锌与银的组合，所述阳极713通过过孔与所述第一金属层711电性连接。\n\n[0123]像素定义层716，形成于所述阳极713远离所述衬底700的一侧，所述像素定义层716的开孔形状与所述像素600的图案一致。\n\n[0124]发光层715，通过所述像素定义层716上的所述开孔与所述阳极713接触，所述发光层715包括有机发光材料；进一步地，所述发光层715还包括荧光材料、量子点材料、钙钛矿材料中的至少一种。\n\n[0125]阴极714，位于所述发光层715及所述像素定义层716远离所述阳极713的一侧；所述阳极713，所述阴极714及位于所述阳极713和所述阴极714之间的所述发光层715形成所述发光器件D1。\n\n[0126]封装层719，位于所述发光器件D1远离所述衬底700的一侧，所述封装层719的制备材料包括有机材料与无机材料的组合。\n\n[0127]在垂直于所述衬底700的方向上，所述第一半导体层701、所述第一绝缘层702、所述第一栅极703、所述第二绝缘层704、所述第二栅极层、所述第三绝缘层706、所述第二半导体层707、所述第四绝缘层708、所述第四栅极709、所述第五绝缘层710及第一金属层711形成所述像素驱动电路。\n\n[0128]为避免所述封装层719中的氢元素与氧元素对所述氧化物晶体管造成影响，所述显示面板还包括位于所述像素驱动电路与所述发光器件D1之间的导电层720，在俯视视角下，所述导电层720与所述氧化物晶体管的正投影重合，且所述导电层720覆盖所述氧化物晶体管，如图4B所示。进一步地，若所述初始化晶体管T2为氧化物晶体管，所述导电层720与所述初始化晶体管T2的正投影重合，且所述导电层720覆盖所述初始化晶体管T2；与之相似地，若所述补偿晶体管T3为氧化物晶体管，所述导电层720与所述补偿晶体管T3的正投影重合，且所述导电层720覆盖所述补偿晶体管T3。\n\n[0129]具体地，所述显示面板还包括第七绝缘层717，所述第七绝缘层717位于所述导电层720靠近所述衬底700的一侧，所述导电层720位于所述第六绝缘层712与所述第七绝缘层717之间，所述导电层720通过所述第七绝缘层717的开孔与第一金属层711连接，所述导电层720的制备材料包括金、银、铜、锂、钠、钾、镁、铝、锌中的至少一种；所述第七绝缘层717的制备材料包括有机材料或者无机材料及其混合物。\n\n[0130]请继续参与图4A～图4B，所述显示面板还包括缓冲层718，所述缓冲层718的制备材料包括有机材料与无机材料及其组合；具体地，缓冲层718的制备材料包括氮化硅、氧化硅、氮氧化硅等。\n\n[0131]请继续参阅图4C，所述在俯视视角下，多个所述像素600分别与所述电位可变信号线VI11和所述复位信号线VI12连接。\n\n[0132]所述电位可变信号线VI11可位于所述显示面板的左右边框区域并从所述左右边框区域向所述显示面板的显示区延伸，所述复位信号线VI12可位于所述显示面板的下边框区域并从所述下边框区域向所述显示面板的显示区延伸。\n\n[0133]由于所述复位信号线VI12可与驱动芯片连接，利用所述驱动芯片提供所需的所述电位可变信号VI1，所以为降低对所述显示面板的左右边框的影响，所述电位可变信号线VI11可位于所述显示面板的下边框区域并从所述下边框区域向所述显示面板的显示区延伸，所述复位信号线VI12可位于所述显示面板的左右边框区域并从所述左右边框区域向所述显示面板的显示区延伸。\n\n[0134]进一步地，所述显示面板还可包括彩色滤光片、触控电极等未示出部分。\n\n[0135]本申请实施例提供的像素驱动电路及其驱动方法、显示面板，所述像素驱动电路包括：发光器件D1、驱动晶体管T1以及补偿模块100；所述补偿模块100至少包括：初始化晶体管T2及补偿晶体管T3；所述初始化晶体管T2用于响应第一扫描信号Scan1并将电位可变信号VI1传输至所述驱动晶体管T1的栅极，初始化所述驱动晶体管T1的栅极电压Vg；所述补偿晶体管T3用于响应补偿控制信号Scan3并将具有补偿阈值电压的数据信号Vdata传输至所述驱动晶体管T1的栅极；其中，所述初始化晶体管T2与所述补偿晶体管T3的类型不同；所述电位可变信号VI1在发光阶段动态补偿所述驱动晶体管T1的栅极电压Vg，以在所述发光阶段t3维持所述驱动晶体管T1的栅极电压Vg稳定，降低所述驱动晶体管T1的源极或漏极对所述驱动晶体管T1栅极的影响，可以改善显示面板的显示效果。\n\n[0136]在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。\n\n[0137]以上对本申请实施例所提供的像素驱动电路及显示面板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。');
INSERT INTO `os_patent_instruction_text` VALUES (11127, 24065, '技术领域\n\n[0001]本发明属于一种建筑施工方法，特别是借助于自动安平激光扫平仪实现建筑施工中墙壁抹灰标准灰饼的施工方法。\n\n背景技术\n\n[0002]在墙壁抹灰施工中，特别是采用机械设备进行墙壁抹灰施工中，首先需要在墙壁上按设计的墙壁抹灰厚度，在设计的面积内设置多个标准灰饼，每个不同位置上的灰饼厚度，即为该位置墙壁的抹灰厚度，现有技术中灰饼的设置是采用人工的办法，即按设计墙壁抹灰厚度，在规定的面积内设置三个以上灰饼，通过三点成面的原理，人工吊线的办法，校正灰饼的厚度满足全部灰饼在同一垂直平面内。灰饼区域内墙壁抹灰厚度按灰饼厚度进行施工。\n\n[0003]现有技术的缺点是，人工吊线的办法准确性差，效率低，没有统一的测量基准，特别是对于门头、短墙和端墙等面积较小的墙壁，由于灰饼之间的距离有限，准确性更差。\n\n发明内容\n\n[0004]为克服现有技术在墙壁抹灰施工中，采用人工吊线的办法，确定灰饼的厚度满足全部灰饼在同一垂直平面内具有准确性差，效率低，没有统一的测量基准，特别是对于面积较小的墙壁，由于灰饼之间的距离有限，准确性更差的缺点，本发明公开一种建筑施工中墙壁抹灰标准灰饼的施工方法，克服现有技术的不足。\n\n[0005]本发明实现发明目的采用的技术方案是：\n\n[0006]建筑施工中墙壁抹灰贴设灰饼的施工方法，该方法是在借助于自动安平激光扫平仪实现的，该方法包括以下步骤：\n\n[0007](1)、对需贴设灰饼墙面前的地面进行清理：\n\n[0008](2)、在需贴设灰饼墙面的两边按要求分别弹出距墙面设计距离的控制线：\n\n[0009](3)、将自动安平激光扫平仪设置在需贴设灰饼墙面前地面的控制线上方：\n\n[0010](4)、调整好自动安平激光扫平仪位置后通电打开，自动安平激光扫平仪在需贴设灰饼墙面前形成与需贴设灰饼墙面具有设计距离的垂直激光幕：\n\n[0011](5)、在需贴设灰饼墙面上贴设灰饼，控制灰饼垂直面与步骤(4)形成激光幕之间的距离，该距离需满足墙壁抹灰厚度的设计要求。\n\n[0012]本发明的有益效果是，由于自动安平激光扫平仪形成的垂直激光幕，垂直激光幕作为测量基准，精度准确统一，墙壁上设置的灰饼与垂直激光幕的距离控制方便，施工简单，效率高。特别是解决了面积较小的墙壁灰饼设置困难的技术不足。\n\n[0013]下面结合附图对本发明进行详细说明。\n\n[0014]附图1为本发明墙壁上灰饼设置正面示意图。\n\n[0015]附图2为本发明实施例示意图。\n\n[0016]附图中，1自动安平激光扫平仪，2灰饼，3、需设置灰饼的墙面，4激光幕。\n\n具体实施方式\n\n[0017]参看附图，建筑施工中墙壁抹灰标准灰饼的施工方法，该方法是在借助于自动安平激光扫平仪1实现的，该方法包括以下步骤：\n\n[0018](1)、对需贴设灰饼墙面前的地面进行清理：，清理干净地面的积水和杂物，便于施工和自动安平激光扫平仪1调整和工作。\n\n[0019](2)、在需贴设灰饼墙面的两边按要求分别弹出距墙面设计距离的控制线，用于确定调整自动安平激光扫平仪1的位置。\n\n[0020](3)、将自动安平激光扫平仪设置在需贴设灰饼墙面前地面的控制线上方。\n\n[0021](4)、调整自动安平激光扫平仪1位置并通电打开，自动安平激光扫平仪1在需设置灰饼墙面3前形成与需设置灰饼墙面3具有设计距离的垂直激光幕4，并效验垂直激光幕4与需设置灰饼墙面3的距离。\n\n[0022](5)、在需贴设灰饼墙面上贴设灰饼墙面3上设置灰饼2，控制灰饼2垂直面与步骤(3)形成激光幕4之间的距离，该距离需满足墙壁抹灰厚度的设计要求。如墙壁抹灰厚度为A，垂直激光幕4与需设置灰饼墙面3的距离H，灰饼2与垂直激光幕4的距离等于H-A。\n\n[0023]本发明实施例中，需贴设灰饼墙面两边控制线距离需贴设灰饼墙面距离为30cm。即H＝30cm。取得了满意的效果。\n\n', '技术领域\n\n[0001]本发明属于一种建筑施工方法，特别是借助于自动安平激光扫平仪实现建筑施工中墙壁抹灰标准灰饼的施工方法。\n\n背景技术\n\n[0002]在墙壁抹灰施工中，特别是采用机械设备进行墙壁抹灰施工中，首先需要在墙壁上按设计的墙壁抹灰厚度，在设计的面积内设置多个标准灰饼，每个不同位置上的灰饼厚度，即为该位置墙壁的抹灰厚度，现有技术中灰饼的设置是采用人工的办法，即按设计墙壁抹灰厚度，在规定的面积内设置三个以上灰饼，通过三点成面的原理，人工吊线的办法，校正灰饼的厚度满足全部灰饼在同一垂直平面内。灰饼区域内墙壁抹灰厚度按灰饼厚度进行施工。\n\n[0003]现有技术的缺点是，人工吊线的办法准确性差，效率低，没有统一的测量基准，特别是对于门头、短墙和端墙等面积较小的墙壁，由于灰饼之间的距离有限，准确性更差。\n\n发明内容\n\n[0004]为克服现有技术在墙壁抹灰施工中，采用人工吊线的办法，确定灰饼的厚度满足全部灰饼在同一垂直平面内具有准确性差，效率低，没有统一的测量基准，特别是对于面积较小的墙壁，由于灰饼之间的距离有限，准确性更差的缺点，本发明公开一种建筑施工中墙壁抹灰标准灰饼的施工方法，克服现有技术的不足。\n\n[0005]本发明实现发明目的采用的技术方案是：\n\n[0006]建筑施工中墙壁抹灰贴设灰饼的施工方法，该方法是在借助于自动安平激光扫平仪实现的，该方法包括以下步骤：\n\n[0007](1)、对需贴设灰饼墙面前的地面进行清理：\n\n[0008](2)、在需贴设灰饼墙面的两边按要求分别弹出距墙面设计距离的控制线：\n\n[0009](3)、将自动安平激光扫平仪设置在需贴设灰饼墙面前地面的控制线上方：\n\n[0010](4)、调整好自动安平激光扫平仪位置后通电打开，自动安平激光扫平仪在需贴设灰饼墙面前形成与需贴设灰饼墙面具有设计距离的垂直激光幕：\n\n[0011](5)、在需贴设灰饼墙面上贴设灰饼，控制灰饼垂直面与步骤(4)形成激光幕之间的距离，该距离需满足墙壁抹灰厚度的设计要求。\n\n[0012]本发明的有益效果是，由于自动安平激光扫平仪形成的垂直激光幕，垂直激光幕作为测量基准，精度准确统一，墙壁上设置的灰饼与垂直激光幕的距离控制方便，施工简单，效率高。特别是解决了面积较小的墙壁灰饼设置困难的技术不足。\n\n[0013]下面结合附图对本发明进行详细说明。\n\n[0014]附图1为本发明墙壁上灰饼设置正面示意图。\n\n[0015]附图2为本发明实施例示意图。\n\n[0016]附图中，1自动安平激光扫平仪，2灰饼，3、需设置灰饼的墙面，4激光幕。\n\n具体实施方式\n\n[0017]参看附图，建筑施工中墙壁抹灰标准灰饼的施工方法，该方法是在借助于自动安平激光扫平仪1实现的，该方法包括以下步骤：\n\n[0018](1)、对需贴设灰饼墙面前的地面进行清理：，清理干净地面的积水和杂物，便于施工和自动安平激光扫平仪1调整和工作。\n\n[0019](2)、在需贴设灰饼墙面的两边按要求分别弹出距墙面设计距离的控制线，用于确定调整自动安平激光扫平仪1的位置。\n\n[0020](3)、将自动安平激光扫平仪设置在需贴设灰饼墙面前地面的控制线上方。\n\n[0021](4)、调整自动安平激光扫平仪1位置并通电打开，自动安平激光扫平仪1在需设置灰饼墙面3前形成与需设置灰饼墙面3具有设计距离的垂直激光幕4，并效验垂直激光幕4与需设置灰饼墙面3的距离。\n\n[0022](5)、在需贴设灰饼墙面上贴设灰饼墙面3上设置灰饼2，控制灰饼2垂直面与步骤(3)形成激光幕4之间的距离，该距离需满足墙壁抹灰厚度的设计要求。如墙壁抹灰厚度为A，垂直激光幕4与需设置灰饼墙面3的距离H，灰饼2与垂直激光幕4的距离等于H-A。\n\n[0023]本发明实施例中，需贴设灰饼墙面两边控制线距离需贴设灰饼墙面距离为30cm。即H＝30cm。取得了满意的效果。\n\n');
INSERT INTO `os_patent_instruction_text` VALUES (11128, 24066, '技术领域\n\n[0001]本发明涉及箱涵道路自动排水系统。\n\n背景技术\n\n[0002]箱涵道路的路面标高常常会低于当地市政排水系统标高，受雨水和周边生产生活污水影响，箱涵通道内很容易积水，连续下雨及台风季节路面积水甚至可达一米以上，严重影响过往车辆和附近居民的生产生活。曾经发生过在暴雨季节箱涵通道内大量积水导致车辆熄火人员丧亡事件。为解决这个安全隐患，必须建设提升泵房承担该区域的排水工作，将箱涵通道内的积水提升至市政排水管道，让雨污水顺着完善的排水系统流入市政排水管网。\n\n[0003]目前，箱涵道路排水系统一般包括排水电站、集水池，集水池一般设置在箱涵道路附近的低洼地带，利用排水沟渠或者管道将箱涵道路上的积水引入，排水电站安装在集水池边，由工人值守，当发现集水池内的水较大且注入集水池的流量较大时，启动电站，将集水池内的水泵送到市政排水管道。\n\n[0004]通过采用上述电站，可以随时将箱涵道路处的积水排走，保证箱涵道路的积水在安全范围，减少由于暴雨季节箱涵通道内大量积水导致车辆熄火人员丧亡事件的发生。但这样的排水电站和集水池组成的箱涵道路排水系统具有如下不足：\n\n[0005]1、通常箱涵道路附近没有取电点，若从最近的几千米外的高压环网柜取电则需建设变配电设施，还可能要破除路面施工，加上审批和建设过程，短期内无法达到排水的要求；另外，采用这样的方式供电，将会使这样的箱涵道路排水系统成本非常高。\n\n[0006]2、通常箱涵道路附近没有通信网络线路，若要远程监控需单独申请敷设光纤。\n\n[0007]3、这样的箱涵道路排水系统在修建完毕后需要有人员值守，特别是在雨季，这样更加推高了成本。\n\n发明内容\n\n[0008]本发明为克服目前箱涵道路采用排水电站排水的方式具有成本高昂的不足，提供一种采用内燃机作动力的箱涵道路自动排水系统，该系统采用无人值守的方式工作，克服目前的箱涵道路自动排水系统的上述不足。\n\n[0009]本发明的技术方案是：一种箱涵道路自动排水系统，包括：收集箱涵道路积水的集水池，安装在所述的集水池上的水泵组，所述的水泵组将所述的集水池内的水，泵送到至市政排水管道，为所述的水泵组提供动力的动力系统；所述的动力系统包括：内燃机组、启动内燃机组带动水泵组工作的中央控制系统，还包括水位检测器和检测集水池水位变化的水位变化检测器，所述的中央控制系统根据水位检测器和检测集水池水位变化的水位变化检测器获得的水位和水位变化数值，控制启动内燃机组和控制水泵组中水泵的工作数量，所述的中央控制系统包括电源模块和控制模块；所述的电源模块由蓄电池供电，所述的控制模块的控制信号输出端分别与所述的内燃机组的启动控制信号、水泵组中水泵的启动控制信号相连。\n\n[0010]进一步的，上述的箱涵道路自动排水系统中：所述的水泵组包括三台水泵，所述的中央控制系统对这三台水泵的控制过程如下：\n\n[0011]当检测到水位变化数值折算到流入集水池中水的流速小于一台水泵的抽水量时，如果水位高于中水位时，轮流启动三台水泵中的任一一台水泵抽水，如果水位低于低水位时，停止抽水；\n\n[0012]当检测到水位变化数值折算到流入集水池中水的流速大于一台水泵的抽水量而小于两台水泵的抽水量时，集水池的水位高于高水位时，轮流启动三台水泵中的任一两台水泵抽水；集水池的水位低于低水位时，只开启任一一台水泵抽水；\n\n[0013]当检测到水位变化数值折算到流入集水池中水的流速大于两台水泵的抽水量时，集水池的水位高于高水位时，启动全部三台水泵抽水；集水池的水位低于中水位时，关闭一台水泵。\n\n[0014]进一步的，上述的箱涵道路自动排水系统中：所述的动力系统中还包括动力蓄电池组、发电机、电动机组；在所述的控制箱的控制下，所述的内燃机组带动所述的发电机发电，所述的发电机输出的电力输入到所述的动力蓄电池组；所述的电动机组为所述的水泵组的驱动马达，所述的动力蓄电池组为所述的电动机组提供电力。\n\n[0015]进一步的，上述的箱涵道路自动排水系统中：还包括检测电池组容量的电池容量检测电路，所述的电池容量检测电路检测所述的动力蓄电池组的实时容量输出接所述的控制箱，所述的控制箱根据所述的电池容量检测电路所检测的所述的动力蓄电池组的实时容量，对所述的内燃机组进行控制。\n\n[0016]进一步的，上述的箱涵道路自动排水系统中：所述的控制箱对所述的内燃机组进行控制的控制过程如下：\n\n[0017]当所述的电池容量检测电路所检测的所述的动力蓄电池组的实时容量接近所述的动力蓄电池组的最低容量时，控制所述的内燃机带动所述的发电机发电；\n\n[0018]当所述的电池容量检测电路所检测的所述的动力蓄电池组的实时容量接近所述的动力蓄电池组的饱和容量时，控制所述的内燃机停止带动所述的发电机发电。\n\n[0019]进一步的，上述的箱涵道路自动排水系统中：所述的中央控制系统中还包括数据通信模块，所述的数据通信模块包括无线通信接口电路，所述的无线通信接口电路通过无线通信网络与设置在远端的监控中心通信。\n\n[0020]进一步的，上述的箱涵道路自动排水系统中：还包括太阳能电池，所述的太阳能电池为所述的蓄电池和动力蓄电池组充电。\n\n[0021]本发明采用内燃机如柴油机为排水系统的动力源且采用自动排水方式，克服了目前的箱涵道路排水站的不足。\n\n[0022]下面结合具体实施例对本发明作较为详细的描述。\n\n附图说明\n\n[0023]图1为本发明箱涵道路自动排水系统实施例2结构框图。\n\n[0024]图2是本发明箱涵道路自动排水系统实施例3结构框图。\n\n[0025]图3是本发明箱涵道路自动排水系统实施例4结构框图。\n\n具体实施方式\n\n[0026]实施例1，本实施例的箱涵自动排水系统分为水泵及管路系统、太阳能UPS供电系统、中央控制系统三个部分。\n\n[0027]水泵及管路系统：包括两台智能静音柴油机自吸水泵，一台小型潜水泵包括给柴油自吸泵灌注引水，进液管路、出液管路、止回底阀、压力变送器、阀门及附属设备。沉井口设有超声波液位计，用于采集液位信号并与控制系统连接。\n\n[0028]太阳能UPS供电系统是中央控制系统的供电电源，包括太阳能电池板及配套电池，UPS电源及附属电池。智能柴油机组配有机组电池，用于智能柴油机待机。控制系统电源主要由用户电池供应，太阳能电池板为该电池充电。\n\n[0029]中央控制系统设置在一个控制箱内：在控制箱内包括PLC控制柜、彩色触摸屏控制面板和2G或3G传输模块以及现场操作箱及若干配电箱端子箱组成。主控采用PLC系统，它是整个自控系统的核心；人机操作设备选用彩色触摸屏，是操作、设定参数、显示报警的主要设备；系统配有2G或3G远传模块，远程监控计算机可监视机组状态、报警信号。\n\n[0030]水泵安装在集水池上，集水池设置在箱涵道路附近低洼处，用于收集周边雨污水；采用渠道或者管道将箱涵道路上的积水引入。\n\n[0031]智能静音柴油机自吸泵，用于提升沉井蓄水池内的雨污水，排水管道，钢管主管、包括止回底阀、压力变送器、阀门、橡胶软接头等附属设备；太阳能及UPS电源系统，用于自动控制系统的不间断供电；自动控制系统由控制箱实现，在控制箱内采用PLC可编程控制器，现场操作采用彩色触摸操作屏，该系统以通讯的方式与智能静音柴油机自吸泵智能控制器连接、以2G或3G远程通讯的方式与远程监控站连接；远程监控站，PC电脑，液晶显示屏，采用2G或3G远程通讯的方式与自动控制系统通讯，远程监视泵房的主要运行状况及参数。远程监控站安装于泵站管理运营监控室内。\n\n[0032]这种箱涵道路泵站是一种无需电源（采用智能静音柴油机自吸泵）的智能化全自动运行和远程监控的智能化自动排水泵站。\n\n[0033]本实施例中箱涵道路自动排水系统根据集水池内的水位进行自动控制，采用水位检测器检测集水池内的水位，并采用检测雨量大小雨量检测器检测雨量，通过检测结果控制智能静音柴油机工作。\n\n[0034]本实施珍例中：高水位自动启动智能静音柴油机自吸泵，低水位自动停止智能静音柴油机自吸泵。\n\n[0035]高水位有3个水位点，分别是单台水泵启动点、多台水泵启动点、以及极高水位报警点；相对应低水位也有3个水位点，分别是停1台水泵点、水泵全停点、以及极低水位报警点。\n\n[0036]两台水泵轮换运行，力求达到平衡运行时间，并具备水泵故障自诊功能。\n\n[0037]彩色触摸屏实现现场操作及监视、声光报警功能，以图形的方式显示泵站各设备状态、各运行参数，具备报警查看、列表、记录功能，具备在线修改运行参数功能。\n\n[0038]现场PLC控制系统和2G或3G远程通讯系统以及彩色触摸屏由太阳能及UPS电源系统独立供电，真正做到了不间断的供电。\n\n[0039]现场控制系统和远程监控站之间采用了2G或3G无线远程通讯，无需架设通讯线路，每月只需不到80元的移动通信费用、即可不间断的监视现场状况。\n\n[0040]本实施例中，对水泵系统的控制分为机组自动、机组手动、应急手动三种，其中机组自动和机组手动过程是PLC控制完成的水泵操作，应急手动是电气及机械机构配合完成的水泵操作。\n\n[0041]本实施例与现有的箱涵排水系统相比，支行成本非常低廉。\n\n[0042]通常箱涵道路排水系统是一种潮汐泵站，当集水池里面的积水达到设定排水水位，排水系统开始运行抽水工况，当集水池的积水下降到安全水位，排水系统抽水工况停止运行，是一种间歇工作状况。具体到箱涵道路排水系统的抽水情况更是和季节有关，也就是说，只有在雨季和台风季节或者遇到其他突发情况，泵站系统才会开始运行抽水工况，旱季和无水情况泵站抽水系统基本不工作。本实施例中的箱涵道路排水系统无需电源。只需要远程监控和定期巡查。\n\n[0043]运行费用分析：\n\n[0044]按照常规设计的运行费用：按照常规设计箱涵道路泵站必须设计双回路供电，一用一备。供电局按照高可靠用电进行配电，电费按高需求用电收取。供电报装时还要按照报装容量收取一笔高可靠报装费，通电以后按照报装容量的40%收取基本电费，当月没有用电也要收取基本电费，用电超出基本电费部分按照梯级电费收取。\n\n[0045]按照本实施例方案设计的运行费用：（1）无报装费；（2）无基本电费；（3）旱季无能源费用；（4）只需支付柴油费用（5）远程监控，只需正常巡查。（5）运行费用底。\n\n[0046]按照常规设计（以变压器设计容量为250KVA为参考）的运行费用：基本电费；基本电费250KVA X 40%X44元/KVA X 12（月）=52800元/年，超出基本电费部分：按照梯级电费收取。\n\n[0047]按照本方案设计的运行费用：旱季基本无能源费用，运行时只需按实际用量支付柴油费用。\n\n[0048]参照一个已经实际运行两年半无外接电源的箱涵道路泵站（两台100KW柴油机）综合统计数据估算，平均每月油费在两千元以内。一年在24000元以内，可以为用户节约了大量运行费用。\n\n[0049]实施例2，如图1所示，本实施例的箱涵道路自动排水系统与实施例1样也是采用柴油机作为动力系统的源的，集水池等土建项目也与实施例1一致，与实施例1相比，本实施例采用柴油发动机组带动发电机发电，将所发的电能存储在一个动力蓄电池组内，然后，通过动力蓄电池组为电动机提供能量，电动机作为水泵组的马达，本实施例设置有三台水泵，每台水泵由一台电动机作为马达提供动力。\n\n[0050]与实施例1一样，本实施例中，也采用中央控制系统对整个系统进行控制，并在中央控制系统中设置远程通信系统，如采用目前运营商使用的2G或者3G无线通信网络与控制中心进行通信，将需要监控的信息发送到监控中心进行监控。\n\n[0051]本系统中控制箱不但需要检测集水池的水位、进入集水池内的水量大小还要检测动力蓄电池组的实时容量，进行如下的控制：\n\n[0052]对这三台水泵的控制过程如下：\n\n[0053]当检测到水位变化数值折算到流入集水池中水的流速小于一台水泵的抽水量时，如果水位高于中水位时，轮流启动三台水泵中的任一一台水泵抽水，如果水位低于低水位时，停止抽水；\n\n[0054]当检测到水位变化数值折算到流入集水池中水的流速大于一台水泵的抽水量而小于两台水泵的抽水量时，集水池的水位高于高水位时，轮流启动三台水泵中的任一两台水泵抽水；集水池的水位低于低水位时，流启任一一台水泵抽水；\n\n[0055]当检测到水位变化数值折算到流入集水池中水的流速大于两台水泵的抽水量时，集水池的水位高于高水位时，轮流启动全部三台水泵抽水；集水池的水位低于中水位时，关闭一台水泵。\n\n[0056]上面可以通过超声波水位计测量集水池内的水的高度，并自行将集水池内的水位分成三个典型水位：低水位、中水位、高水位。至于水位变化数值可以通过检测集水池水位变化的水位变化检测器来检测，也可以根据超声波水位计的实时检测数据，在中央控制系统中通过进行微分计算获得，本实施例中，根据超声波水位计检测的数量进行差分而得到的。\n\n[0057]控制箱对柴油机组进行控制的控制过程如下：\n\n[0058]当电池容量检测电路所检测的动力蓄电池组的实时容量接近该动力蓄电池组的最低容量时，控制柴油机带动发电机发电；\n\n[0059]当电池容量检测电路所检测的动力蓄电池组的实时容量接近该动力蓄电池组的饱和容量时，控制柴油机停止带动发电机发电。\n\n[0060]因为柴油机工作在最优状态时，效率最高，且排量最少，这样采用一个蓄电池作为缓冲，可以为三台水泵提供充足的能量的同时，还可以使柴油机工作在最优状态。\n\n[0061]本实施例中，由于采用了动力蓄电池组进行缓冲，可以保证柴油机等内燃机的负载稳定，使柴油机等动力工作在最环保最经济的工作状态，而不受负载功率变化的影响。随着电子技术和蓄电池技术的飞速发展，增加的蓄电池存储转发环节的效率将会更加提高，使这个环节损耗的能量会更加减少，采用这样混合动力的方式将会更加节能环保。\n\n[0062]实施例3，如图2所示，本实施例与实施例2基本一致，本实施例与实施例2的主要差别是，发电机输出通过一个能量分配单元将发电机输出电能从发电机直接分配到各电动机，如果在工作过程中，发电机的能量大于工作中的电动机所需要电量，则将剩余的电量存储在蓄电池中，如果电动机的总功率大于发电机的功率，则可以将存储在蓄电池中的电能输出供电动机组使用，这样可以保证，柴油机工作在最佳工作状态，不需要随负载的增加而增加功率，也不需要承受负载的减少而减少输出。对于本实施例中增加的能量分配单元，本领域的技术人员可以采用目前广泛应用的电源分配网络电路实现，目前，广泛应用的电源分配网络基本上都采用高速数字系统完成。\n\n[0063]实施例4如图3所示，本实施例与实施例3的主要区别是，增加了太阳能电池板，在有太阳能时，可以将太阳能发电保存在蓄电池和动力蓄电池组内，作为日常维护用电的同时，多余的电能还可以用于电动机抽水，使本实施例的箱涵道路排水系统更加节能环保。\n\n', '技术领域\n\n[0001]本发明涉及箱涵道路自动排水系统。\n\n背景技术\n\n[0002]箱涵道路的路面标高常常会低于当地市政排水系统标高，受雨水和周边生产生活污水影响，箱涵通道内很容易积水，连续下雨及台风季节路面积水甚至可达一米以上，严重影响过往车辆和附近居民的生产生活。曾经发生过在暴雨季节箱涵通道内大量积水导致车辆熄火人员丧亡事件。为解决这个安全隐患，必须建设提升泵房承担该区域的排水工作，将箱涵通道内的积水提升至市政排水管道，让雨污水顺着完善的排水系统流入市政排水管网。\n\n[0003]目前，箱涵道路排水系统一般包括排水电站、集水池，集水池一般设置在箱涵道路附近的低洼地带，利用排水沟渠或者管道将箱涵道路上的积水引入，排水电站安装在集水池边，由工人值守，当发现集水池内的水较大且注入集水池的流量较大时，启动电站，将集水池内的水泵送到市政排水管道。\n\n[0004]通过采用上述电站，可以随时将箱涵道路处的积水排走，保证箱涵道路的积水在安全范围，减少由于暴雨季节箱涵通道内大量积水导致车辆熄火人员丧亡事件的发生。但这样的排水电站和集水池组成的箱涵道路排水系统具有如下不足：\n\n[0005]1、通常箱涵道路附近没有取电点，若从最近的几千米外的高压环网柜取电则需建设变配电设施，还可能要破除路面施工，加上审批和建设过程，短期内无法达到排水的要求；另外，采用这样的方式供电，将会使这样的箱涵道路排水系统成本非常高。\n\n[0006]2、通常箱涵道路附近没有通信网络线路，若要远程监控需单独申请敷设光纤。\n\n[0007]3、这样的箱涵道路排水系统在修建完毕后需要有人员值守，特别是在雨季，这样更加推高了成本。\n\n发明内容\n\n[0008]本发明为克服目前箱涵道路采用排水电站排水的方式具有成本高昂的不足，提供一种采用内燃机作动力的箱涵道路自动排水系统，该系统采用无人值守的方式工作，克服目前的箱涵道路自动排水系统的上述不足。\n\n[0009]本发明的技术方案是：一种箱涵道路自动排水系统，包括：收集箱涵道路积水的集水池，安装在所述的集水池上的水泵组，所述的水泵组将所述的集水池内的水，泵送到至市政排水管道，为所述的水泵组提供动力的动力系统；所述的动力系统包括：内燃机组、启动内燃机组带动水泵组工作的中央控制系统，还包括水位检测器和检测集水池水位变化的水位变化检测器，所述的中央控制系统根据水位检测器和检测集水池水位变化的水位变化检测器获得的水位和水位变化数值，控制启动内燃机组和控制水泵组中水泵的工作数量，所述的中央控制系统包括电源模块和控制模块；所述的电源模块由蓄电池供电，所述的控制模块的控制信号输出端分别与所述的内燃机组的启动控制信号、水泵组中水泵的启动控制信号相连。\n\n[0010]进一步的，上述的箱涵道路自动排水系统中：所述的水泵组包括三台水泵，所述的中央控制系统对这三台水泵的控制过程如下：\n\n[0011]当检测到水位变化数值折算到流入集水池中水的流速小于一台水泵的抽水量时，如果水位高于中水位时，轮流启动三台水泵中的任一一台水泵抽水，如果水位低于低水位时，停止抽水；\n\n[0012]当检测到水位变化数值折算到流入集水池中水的流速大于一台水泵的抽水量而小于两台水泵的抽水量时，集水池的水位高于高水位时，轮流启动三台水泵中的任一两台水泵抽水；集水池的水位低于低水位时，只开启任一一台水泵抽水；\n\n[0013]当检测到水位变化数值折算到流入集水池中水的流速大于两台水泵的抽水量时，集水池的水位高于高水位时，启动全部三台水泵抽水；集水池的水位低于中水位时，关闭一台水泵。\n\n[0014]进一步的，上述的箱涵道路自动排水系统中：所述的动力系统中还包括动力蓄电池组、发电机、电动机组；在所述的控制箱的控制下，所述的内燃机组带动所述的发电机发电，所述的发电机输出的电力输入到所述的动力蓄电池组；所述的电动机组为所述的水泵组的驱动马达，所述的动力蓄电池组为所述的电动机组提供电力。\n\n[0015]进一步的，上述的箱涵道路自动排水系统中：还包括检测电池组容量的电池容量检测电路，所述的电池容量检测电路检测所述的动力蓄电池组的实时容量输出接所述的控制箱，所述的控制箱根据所述的电池容量检测电路所检测的所述的动力蓄电池组的实时容量，对所述的内燃机组进行控制。\n\n[0016]进一步的，上述的箱涵道路自动排水系统中：所述的控制箱对所述的内燃机组进行控制的控制过程如下：\n\n[0017]当所述的电池容量检测电路所检测的所述的动力蓄电池组的实时容量接近所述的动力蓄电池组的最低容量时，控制所述的内燃机带动所述的发电机发电；\n\n[0018]当所述的电池容量检测电路所检测的所述的动力蓄电池组的实时容量接近所述的动力蓄电池组的饱和容量时，控制所述的内燃机停止带动所述的发电机发电。\n\n[0019]进一步的，上述的箱涵道路自动排水系统中：所述的中央控制系统中还包括数据通信模块，所述的数据通信模块包括无线通信接口电路，所述的无线通信接口电路通过无线通信网络与设置在远端的监控中心通信。\n\n[0020]进一步的，上述的箱涵道路自动排水系统中：还包括太阳能电池，所述的太阳能电池为所述的蓄电池和动力蓄电池组充电。\n\n[0021]本发明采用内燃机如柴油机为排水系统的动力源且采用自动排水方式，克服了目前的箱涵道路排水站的不足。\n\n[0022]下面结合具体实施例对本发明作较为详细的描述。\n\n附图说明\n\n[0023]图1为本发明箱涵道路自动排水系统实施例2结构框图。\n\n[0024]图2是本发明箱涵道路自动排水系统实施例3结构框图。\n\n[0025]图3是本发明箱涵道路自动排水系统实施例4结构框图。\n\n具体实施方式\n\n[0026]实施例1，本实施例的箱涵自动排水系统分为水泵及管路系统、太阳能UPS供电系统、中央控制系统三个部分。\n\n[0027]水泵及管路系统：包括两台智能静音柴油机自吸水泵，一台小型潜水泵包括给柴油自吸泵灌注引水，进液管路、出液管路、止回底阀、压力变送器、阀门及附属设备。沉井口设有超声波液位计，用于采集液位信号并与控制系统连接。\n\n[0028]太阳能UPS供电系统是中央控制系统的供电电源，包括太阳能电池板及配套电池，UPS电源及附属电池。智能柴油机组配有机组电池，用于智能柴油机待机。控制系统电源主要由用户电池供应，太阳能电池板为该电池充电。\n\n[0029]中央控制系统设置在一个控制箱内：在控制箱内包括PLC控制柜、彩色触摸屏控制面板和2G或3G传输模块以及现场操作箱及若干配电箱端子箱组成。主控采用PLC系统，它是整个自控系统的核心；人机操作设备选用彩色触摸屏，是操作、设定参数、显示报警的主要设备；系统配有2G或3G远传模块，远程监控计算机可监视机组状态、报警信号。\n\n[0030]水泵安装在集水池上，集水池设置在箱涵道路附近低洼处，用于收集周边雨污水；采用渠道或者管道将箱涵道路上的积水引入。\n\n[0031]智能静音柴油机自吸泵，用于提升沉井蓄水池内的雨污水，排水管道，钢管主管、包括止回底阀、压力变送器、阀门、橡胶软接头等附属设备；太阳能及UPS电源系统，用于自动控制系统的不间断供电；自动控制系统由控制箱实现，在控制箱内采用PLC可编程控制器，现场操作采用彩色触摸操作屏，该系统以通讯的方式与智能静音柴油机自吸泵智能控制器连接、以2G或3G远程通讯的方式与远程监控站连接；远程监控站，PC电脑，液晶显示屏，采用2G或3G远程通讯的方式与自动控制系统通讯，远程监视泵房的主要运行状况及参数。远程监控站安装于泵站管理运营监控室内。\n\n[0032]这种箱涵道路泵站是一种无需电源（采用智能静音柴油机自吸泵）的智能化全自动运行和远程监控的智能化自动排水泵站。\n\n[0033]本实施例中箱涵道路自动排水系统根据集水池内的水位进行自动控制，采用水位检测器检测集水池内的水位，并采用检测雨量大小雨量检测器检测雨量，通过检测结果控制智能静音柴油机工作。\n\n[0034]本实施珍例中：高水位自动启动智能静音柴油机自吸泵，低水位自动停止智能静音柴油机自吸泵。\n\n[0035]高水位有3个水位点，分别是单台水泵启动点、多台水泵启动点、以及极高水位报警点；相对应低水位也有3个水位点，分别是停1台水泵点、水泵全停点、以及极低水位报警点。\n\n[0036]两台水泵轮换运行，力求达到平衡运行时间，并具备水泵故障自诊功能。\n\n[0037]彩色触摸屏实现现场操作及监视、声光报警功能，以图形的方式显示泵站各设备状态、各运行参数，具备报警查看、列表、记录功能，具备在线修改运行参数功能。\n\n[0038]现场PLC控制系统和2G或3G远程通讯系统以及彩色触摸屏由太阳能及UPS电源系统独立供电，真正做到了不间断的供电。\n\n[0039]现场控制系统和远程监控站之间采用了2G或3G无线远程通讯，无需架设通讯线路，每月只需不到80元的移动通信费用、即可不间断的监视现场状况。\n\n[0040]本实施例中，对水泵系统的控制分为机组自动、机组手动、应急手动三种，其中机组自动和机组手动过程是PLC控制完成的水泵操作，应急手动是电气及机械机构配合完成的水泵操作。\n\n[0041]本实施例与现有的箱涵排水系统相比，支行成本非常低廉。\n\n[0042]通常箱涵道路排水系统是一种潮汐泵站，当集水池里面的积水达到设定排水水位，排水系统开始运行抽水工况，当集水池的积水下降到安全水位，排水系统抽水工况停止运行，是一种间歇工作状况。具体到箱涵道路排水系统的抽水情况更是和季节有关，也就是说，只有在雨季和台风季节或者遇到其他突发情况，泵站系统才会开始运行抽水工况，旱季和无水情况泵站抽水系统基本不工作。本实施例中的箱涵道路排水系统无需电源。只需要远程监控和定期巡查。\n\n[0043]运行费用分析：\n\n[0044]按照常规设计的运行费用：按照常规设计箱涵道路泵站必须设计双回路供电，一用一备。供电局按照高可靠用电进行配电，电费按高需求用电收取。供电报装时还要按照报装容量收取一笔高可靠报装费，通电以后按照报装容量的40%收取基本电费，当月没有用电也要收取基本电费，用电超出基本电费部分按照梯级电费收取。\n\n[0045]按照本实施例方案设计的运行费用：（1）无报装费；（2）无基本电费；（3）旱季无能源费用；（4）只需支付柴油费用（5）远程监控，只需正常巡查。（5）运行费用底。\n\n[0046]按照常规设计（以变压器设计容量为250KVA为参考）的运行费用：基本电费；基本电费250KVA X 40%X44元/KVA X 12（月）=52800元/年，超出基本电费部分：按照梯级电费收取。\n\n[0047]按照本方案设计的运行费用：旱季基本无能源费用，运行时只需按实际用量支付柴油费用。\n\n[0048]参照一个已经实际运行两年半无外接电源的箱涵道路泵站（两台100KW柴油机）综合统计数据估算，平均每月油费在两千元以内。一年在24000元以内，可以为用户节约了大量运行费用。\n\n[0049]实施例2，如图1所示，本实施例的箱涵道路自动排水系统与实施例1样也是采用柴油机作为动力系统的源的，集水池等土建项目也与实施例1一致，与实施例1相比，本实施例采用柴油发动机组带动发电机发电，将所发的电能存储在一个动力蓄电池组内，然后，通过动力蓄电池组为电动机提供能量，电动机作为水泵组的马达，本实施例设置有三台水泵，每台水泵由一台电动机作为马达提供动力。\n\n[0050]与实施例1一样，本实施例中，也采用中央控制系统对整个系统进行控制，并在中央控制系统中设置远程通信系统，如采用目前运营商使用的2G或者3G无线通信网络与控制中心进行通信，将需要监控的信息发送到监控中心进行监控。\n\n[0051]本系统中控制箱不但需要检测集水池的水位、进入集水池内的水量大小还要检测动力蓄电池组的实时容量，进行如下的控制：\n\n[0052]对这三台水泵的控制过程如下：\n\n[0053]当检测到水位变化数值折算到流入集水池中水的流速小于一台水泵的抽水量时，如果水位高于中水位时，轮流启动三台水泵中的任一一台水泵抽水，如果水位低于低水位时，停止抽水；\n\n[0054]当检测到水位变化数值折算到流入集水池中水的流速大于一台水泵的抽水量而小于两台水泵的抽水量时，集水池的水位高于高水位时，轮流启动三台水泵中的任一两台水泵抽水；集水池的水位低于低水位时，流启任一一台水泵抽水；\n\n[0055]当检测到水位变化数值折算到流入集水池中水的流速大于两台水泵的抽水量时，集水池的水位高于高水位时，轮流启动全部三台水泵抽水；集水池的水位低于中水位时，关闭一台水泵。\n\n[0056]上面可以通过超声波水位计测量集水池内的水的高度，并自行将集水池内的水位分成三个典型水位：低水位、中水位、高水位。至于水位变化数值可以通过检测集水池水位变化的水位变化检测器来检测，也可以根据超声波水位计的实时检测数据，在中央控制系统中通过进行微分计算获得，本实施例中，根据超声波水位计检测的数量进行差分而得到的。\n\n[0057]控制箱对柴油机组进行控制的控制过程如下：\n\n[0058]当电池容量检测电路所检测的动力蓄电池组的实时容量接近该动力蓄电池组的最低容量时，控制柴油机带动发电机发电；\n\n[0059]当电池容量检测电路所检测的动力蓄电池组的实时容量接近该动力蓄电池组的饱和容量时，控制柴油机停止带动发电机发电。\n\n[0060]因为柴油机工作在最优状态时，效率最高，且排量最少，这样采用一个蓄电池作为缓冲，可以为三台水泵提供充足的能量的同时，还可以使柴油机工作在最优状态。\n\n[0061]本实施例中，由于采用了动力蓄电池组进行缓冲，可以保证柴油机等内燃机的负载稳定，使柴油机等动力工作在最环保最经济的工作状态，而不受负载功率变化的影响。随着电子技术和蓄电池技术的飞速发展，增加的蓄电池存储转发环节的效率将会更加提高，使这个环节损耗的能量会更加减少，采用这样混合动力的方式将会更加节能环保。\n\n[0062]实施例3，如图2所示，本实施例与实施例2基本一致，本实施例与实施例2的主要差别是，发电机输出通过一个能量分配单元将发电机输出电能从发电机直接分配到各电动机，如果在工作过程中，发电机的能量大于工作中的电动机所需要电量，则将剩余的电量存储在蓄电池中，如果电动机的总功率大于发电机的功率，则可以将存储在蓄电池中的电能输出供电动机组使用，这样可以保证，柴油机工作在最佳工作状态，不需要随负载的增加而增加功率，也不需要承受负载的减少而减少输出。对于本实施例中增加的能量分配单元，本领域的技术人员可以采用目前广泛应用的电源分配网络电路实现，目前，广泛应用的电源分配网络基本上都采用高速数字系统完成。\n\n[0063]实施例4如图3所示，本实施例与实施例3的主要区别是，增加了太阳能电池板，在有太阳能时，可以将太阳能发电保存在蓄电池和动力蓄电池组内，作为日常维护用电的同时，多余的电能还可以用于电动机抽水，使本实施例的箱涵道路排水系统更加节能环保。\n\n');
INSERT INTO `os_patent_instruction_text` VALUES (11129, 24067, '[0001]所述技术领域\n\n[0002]本发明属于城市排水系统，特别是涉及一种城市内涝预前应急处置方法及内涝预前应急处置系统\n\n背景技术\n\n[0003]随着城市的快速发展，城市的道路的地下排水不畅，已经成为多数城市的重大安全隐患，特别是在雨量大而急时，城市的排水系统的不能及时排涝，城市的低洼处、道路互通桥梁下、涵洞中，造成多起行人和车辆被淹后的人员溺水死亡事件，现有技术城市道路、低洼处的排水系统采用的方式和存在的问题是，如在道路互通桥梁下、涵洞中设置固定排涝泵站，排涝泵站将收集的积水强制排出。由于发生内涝积水并非经常发生，南方地区一年发生一次或几次，北方地区一年或几年发生一次，设置固定排涝泵站造成大量的设备浪费，成本增加，同时排涝泵站的使用环境差，固定排涝泵站的低频率使用，泵站的维护不及时，大大降低设备使用时间。使用时需要人工现场根据积水情况决定是否开启，排涝泵站的设计能力小不能满足应急使用，设计能力大造成成本增加设备浪费等诸多问题。\n\n[0004]发明目的\n\n[0005]为克服现有技术存在的设置固定排涝泵站造成大量的设备浪费，成本增加，同时排涝泵站的使用环境差，固定排涝泵站的低频率使用，泵站的维护不及时，大大降低设备使用时间。使用时需要人工现场根据积水情况决定是否开启，往往在形成内涝之后才开始抢险，没有形成预前自动排水能力。排涝泵站的设计能力小不能满足应急使用，设计能力大造成成本增加设备浪费等诸多技术不足，本发明公开一种城市内涝预前应急处置方法及内涝预前应急处置系统。\n\n[0006]本发明解决城市内涝预前应急处置方法采用的技术方案是：\n\n[0007]该方法借助于自带动力源的智能化流动泵站、易发生内涝处的积水井和调度控制中心实现。\n\n[0008]⑴、在城市的桥梁下、涵洞中或城市低洼处设立积水井、应急排水管道、水位监测系统和流动泵站安装机座，水位监测系统与调度控制中心建立无线通讯联系。\n\n[0009]⑵、水位监测系统向调度控制中心提供低洼处实时水位和水位变化的图像和数字信息。\n\n[0010]⑶、调度控制中心根据实时天气降雨量和水位监测系统提供低洼处实时水位和水位变化的图像和数字信息，提前在现场配备排水能力，调集一台或多台模块化自带动力源的流动泵站，安装在流动泵站安装机座上，流动泵站可自行启动排水，也可由调度控制中心控制或现场人工控制自带动力源的流动泵站工作，实施对低洼处设立积水井内的积水经应急排水管道排涝。\n\n[0011]⑷、该流动泵站可于整个极端降水天气期间长期驻守，待排涝完成后将自带动力源的流动泵站调回，进行集中管理维护。\n\n[0012]发明解决城市内涝预前应急处置系统采用的技术方案是：应急处置系统包括积水井、应急排水管道、流动泵站和调度控制中心：\n\n[0013]⑴、所述的积水井为设置在城市低洼处现场的积水井，所述的积水井与现场城市道路下水排水管道连通，所述的积水井地面相邻设置有泵站安装基座和应急排水管道。\n\n[0014]⑵、所述的泵站为无人值守智能化的自带动力源的流动泵站，所述的流动泵站包括：带检修门的封闭的箱体、水泵、柴油发电机组和与调度控制中心建立通讯联系的水泵控制系统，水泵、柴油发电机组和水泵自动控制系统设置在箱体内，水泵电机与柴油发电机组动力连接，所述的水泵控制系统与柴油发电机组电连接，所述的水泵的进水口和出水口分别伸出箱体的外面，并分别与积水井和应急排水管道连通。\n\n[0015]⑶、所述的调度控制中心包括：设置在积水现场水位监测站、设置在积水井内的水位检测仪和总控中心，所述的水位检测仪与现场水位监测站建立通讯连接，所述的调度控制中心内的总控中心与水泵自动控制系统建立远程通讯控制连接，构成总控中心根据水位检测仪和现场水位监测站提供的数据和现场图像对箱体内的水泵控制系统无线远程监视和控制的通讯连接，所述的现场水位监测站包括：装有电源、通讯模块和充电模块的监测设备箱体、现场水位监测摄像头和太阳能光伏板，现场水位监测摄像头通过监测设备箱体内的通讯模块与总控中心建立通讯连接，太阳能光伏板与监测设备箱体内的充电模块电联接，形成太阳能光伏板对监测设备箱体内的充电模块实施充电的电路结构。\n\n[0016]本发明的有益效果是：城市道路和低洼处的积水可自行实时监控或由调度控制中心监控，调度控制中心可根据积水现场水位数据和天气预报预估获得并及时采取应对措施，将事后处理变为提前或实时处理。积水井日常可作为城市道路洒水、消防、路边绿化等用水水源，用水车可在此取水。\n\n[0017]调度控制中心根据雨量，调配泵站的排水能力，泵站利用率高，非工作时泵站集中管理和维护大大延长设备使用时间和降低维护费用，而且可用于其它地区或场合的排涝救灾。本发明无需外接电源，使用灵活方便。采用智能化控制系统，可长期无人值守，自动工作。\n\n[0018]下面结合附图对本发明进行详细说明。\n\n附图说明\n\n[0019]附图1为本发明方法流程示意图。\n\n[0020]附图2为本发明内涝应急处置系统示意图。\n\n[0021]附图3为本发明积水现场水位监测站和流动泵站示意图。\n\n[0022]附图中，1.积水井、1-2.井盖、1-2.1抽水孔、2.排水管道、2-1.应急排水管道、3.泵站安装基座、3-1.梯形凸起、3.2水位监测站、4.流动泵站、4-1.封闭的箱体、4-1.1梯形凹槽、4-2.水泵、4-2.1.进水口、4-2.2出水口、4-3.柴油发电机组、5.调度控制中心、5-1.水位检测仪、5-2.总控中心、6.水泵控制系统、7.积水现场水位监测站、7-1.监测设备箱体、7-2.现场水位监测摄像头、7-3太阳能光伏板、7-4电杆。\n\n具体实施方式\n\n[0023]参考附图，一种城市内涝预前应急处置方法，该方法借助于自带动力源的智能化流动泵站、易发生内涝处的积水井和调度控制中心实现。具体方法如下：\n\n[0024]⑴、在城市的桥梁下、涵洞中或城市低洼处设立积水井、应急排水管道、水位监测系统和流动泵站安装机座，水位监测系统与调度控制中心建立通讯联系：\n\n[0025]⑵、水位监测系统向调度控制中心提供低洼处实时水位和水位变化的图像和数字信息：\n\n[0026]⑶、调度控制中心根据实时天气降雨量和水位监测系统提供低洼处实时水位和水位变化的图像和数字信息，调集一台或多台模块化自带动力源的流动泵站，安装在流动泵站安装机座上，由调度控制中心控制或现场人工控制自带动力源的流动泵站工作，实施对低洼处设立积水井内的积水经应急排水管道排涝；\n\n[0027]⑷、排涝完成后模块化自带动力源的流动泵站调回，集中管理维护。\n\n[0028]本发明采用上述城市内涝预前应急处置方法，该方法在雨季或台风季节，调度控制中心可根据实时天气和现场情况，组织调运流动泵站和流动泵站数量提前到达排涝现场并快速安装在泵站基座上，流动泵站可自行启动排水，调度控制中心实时获得检测仪检测到积水井内水位和积水现场水位监测站的视频摄像头检测到的低洼处的积水情况，远程控制流动泵站开机工作。\n\n[0029]雨季过后，流动泵站调回，集中管理维修，提高设备的使用率。非工作时泵站集中管理和维护大大延长设备使用时间和降低维护费用，而且可用于其它地区或场合的排涝救灾。积水井日常可作为城市道路洒水、路边绿化、消防等用水水源，用水车可在此取水。\n\n[0030]一种城市内涝预前应急处置系统，包括积水井、应急排水管道、泵站和调度控制中心。\n\n[0031]⑴、所述的积水井1为设置在城市低洼处现场的积水井，所述的积水井1与现场城市道路下水排水管道2连通，所述的积水井1地面相邻设置有泵站安装基座3和应急排水管道2-1。\n\n[0032]积水井1与现场城市道路下水排水管道2连通，使排水管道2内的水流向积水井1，积水井1地面相邻设置有泵站安装基座3用于应急排涝时，安装带动力源的流动泵站4，流动泵站4通过应急排水管道2-1排涝。\n\n[0033]⑵、所述的泵站为无人值守智能化的自带动力源的流动泵站4，所述的流动泵站4包括：带检修门的封闭的箱体4-1、水泵4-2、柴油发电机组4-3和与调度控制中心5建立通讯联系的水泵控制系统6，水泵4-2、柴油发电机组4-3和水泵自动控制系统6设置在箱体4-1内，水泵4-2电机与柴油发电机组4-3动力连接，所述的水泵控制系统6与柴油发电机组4-3电连接，所述的水泵4-2的进水口4-2.1和出水口4-2.2分别伸出箱体4-1的外面，并分别与积水井1和应急排水管道2-1连通。\n\n[0034]水泵控制系统6由远端设置的调度控制中心5无线监控，开启蓄电池开关启动柴油发电机组4-3带动水泵4工作经积水井1排涝。\n\n[0035]⑶、所述的调度控制中心5包括：设置在积水现场水位监测站7、设置在积水井1内的水位检测仪5-1和总控中心5-2，所述的水位检测仪5-1与现场水位监测站7建立通讯连接，所述的调度控制中心5内的总控中心5-2与水泵自动控制系统6建立远程通讯控制连接，构成总控中心5-2根据水位检测仪5-1和现场水位监测站7提供的数据和现场图像对箱体4-1内的水泵控制系统6无线远程监视和控制的通讯连接，所述的现场水位监测站7包括：装有电源、通讯模块和充电模块的监测设备箱体7-1、现场水位监测摄像头7-2和太阳能光伏板7-3，现场水位监测摄像头7-2通过监测设备箱体7-1内的通讯模块与总控中心5-2建立通讯连接，太阳能光伏板7-3与监测设备箱体7-1内的充电模块电联接，形成太阳能光伏板7-3对监测设备箱体7-1内的充电模块实施充电的电路结构。\n\n[0036]现场水位监测站7中的现场水位监测摄像头7-2\n\n[0037]水位检测仪5-1用于检测积水井1内的水位，现场水位监测站7中的现场水位监测摄像头7-2用于检测积水井1上面的积水情况，为调度控制中心5提供排涝信息。该系统在极端灾害情况下，还具有向城市预警系统提供报警信号功能。极端灾害可以设定为局部特大水患，路面水位超出车辆通行的安全水位等等。\n\n[0038]本发明实施例中，为便于流动泵站4快速安装，所述的泵站安装基座3上设置有梯形凸起3-1，所述的箱体4-1底部设置有与梯形凸起3-1对应的梯形凹槽4-1.1。箱体4-1底部的梯形凹槽4-1.1与梯形凸起3-1对应的安装。\n\n[0039]本发明实施例中，为适应排涝需要，所述的泵站安装基座3和流动泵站4在积水井1地面相邻设置有两套。在内涝严重时，可安装两套流动泵站4加大排涝流量。\n\n[0040]本发明实施例中，为增加单台流动泵站4的排涝流量和调整流量，所述流动泵站4的水泵4-2设置两台、两台水泵4-2的电机分别经控制电路域柴油发电机组4-3连接。视实际流量需要，决定两台水泵4-2同时开启或单台开启。\n\n[0041]本发明实施例中，为防止积水井1对道路使用的影响，所述的积水井1上设置有井盖1-2，井盖1-2上设置有抽水孔1-2.1。流动泵站4经抽水孔1-2.1抽水排涝。\n\n[0042]本发明实施例中，现场水位监测站7还设有电杆7-4，监测设备箱体7-1、现场水位监测摄像头7-2和太阳能光伏板7-3一次固定安装在电杆7-4上。防止积水对设备的损毁和便于通讯天线的设置。\n\n', '[0001]所述技术领域\n\n[0002]本发明属于城市排水系统，特别是涉及一种城市内涝预前应急处置方法及内涝预前应急处置系统\n\n背景技术\n\n[0003]随着城市的快速发展，城市的道路的地下排水不畅，已经成为多数城市的重大安全隐患，特别是在雨量大而急时，城市的排水系统的不能及时排涝，城市的低洼处、道路互通桥梁下、涵洞中，造成多起行人和车辆被淹后的人员溺水死亡事件，现有技术城市道路、低洼处的排水系统采用的方式和存在的问题是，如在道路互通桥梁下、涵洞中设置固定排涝泵站，排涝泵站将收集的积水强制排出。由于发生内涝积水并非经常发生，南方地区一年发生一次或几次，北方地区一年或几年发生一次，设置固定排涝泵站造成大量的设备浪费，成本增加，同时排涝泵站的使用环境差，固定排涝泵站的低频率使用，泵站的维护不及时，大大降低设备使用时间。使用时需要人工现场根据积水情况决定是否开启，排涝泵站的设计能力小不能满足应急使用，设计能力大造成成本增加设备浪费等诸多问题。\n\n[0004]发明目的\n\n[0005]为克服现有技术存在的设置固定排涝泵站造成大量的设备浪费，成本增加，同时排涝泵站的使用环境差，固定排涝泵站的低频率使用，泵站的维护不及时，大大降低设备使用时间。使用时需要人工现场根据积水情况决定是否开启，往往在形成内涝之后才开始抢险，没有形成预前自动排水能力。排涝泵站的设计能力小不能满足应急使用，设计能力大造成成本增加设备浪费等诸多技术不足，本发明公开一种城市内涝预前应急处置方法及内涝预前应急处置系统。\n\n[0006]本发明解决城市内涝预前应急处置方法采用的技术方案是：\n\n[0007]该方法借助于自带动力源的智能化流动泵站、易发生内涝处的积水井和调度控制中心实现。\n\n[0008]⑴、在城市的桥梁下、涵洞中或城市低洼处设立积水井、应急排水管道、水位监测系统和流动泵站安装机座，水位监测系统与调度控制中心建立无线通讯联系。\n\n[0009]⑵、水位监测系统向调度控制中心提供低洼处实时水位和水位变化的图像和数字信息。\n\n[0010]⑶、调度控制中心根据实时天气降雨量和水位监测系统提供低洼处实时水位和水位变化的图像和数字信息，提前在现场配备排水能力，调集一台或多台模块化自带动力源的流动泵站，安装在流动泵站安装机座上，流动泵站可自行启动排水，也可由调度控制中心控制或现场人工控制自带动力源的流动泵站工作，实施对低洼处设立积水井内的积水经应急排水管道排涝。\n\n[0011]⑷、该流动泵站可于整个极端降水天气期间长期驻守，待排涝完成后将自带动力源的流动泵站调回，进行集中管理维护。\n\n[0012]发明解决城市内涝预前应急处置系统采用的技术方案是：应急处置系统包括积水井、应急排水管道、流动泵站和调度控制中心：\n\n[0013]⑴、所述的积水井为设置在城市低洼处现场的积水井，所述的积水井与现场城市道路下水排水管道连通，所述的积水井地面相邻设置有泵站安装基座和应急排水管道。\n\n[0014]⑵、所述的泵站为无人值守智能化的自带动力源的流动泵站，所述的流动泵站包括：带检修门的封闭的箱体、水泵、柴油发电机组和与调度控制中心建立通讯联系的水泵控制系统，水泵、柴油发电机组和水泵自动控制系统设置在箱体内，水泵电机与柴油发电机组动力连接，所述的水泵控制系统与柴油发电机组电连接，所述的水泵的进水口和出水口分别伸出箱体的外面，并分别与积水井和应急排水管道连通。\n\n[0015]⑶、所述的调度控制中心包括：设置在积水现场水位监测站、设置在积水井内的水位检测仪和总控中心，所述的水位检测仪与现场水位监测站建立通讯连接，所述的调度控制中心内的总控中心与水泵自动控制系统建立远程通讯控制连接，构成总控中心根据水位检测仪和现场水位监测站提供的数据和现场图像对箱体内的水泵控制系统无线远程监视和控制的通讯连接，所述的现场水位监测站包括：装有电源、通讯模块和充电模块的监测设备箱体、现场水位监测摄像头和太阳能光伏板，现场水位监测摄像头通过监测设备箱体内的通讯模块与总控中心建立通讯连接，太阳能光伏板与监测设备箱体内的充电模块电联接，形成太阳能光伏板对监测设备箱体内的充电模块实施充电的电路结构。\n\n[0016]本发明的有益效果是：城市道路和低洼处的积水可自行实时监控或由调度控制中心监控，调度控制中心可根据积水现场水位数据和天气预报预估获得并及时采取应对措施，将事后处理变为提前或实时处理。积水井日常可作为城市道路洒水、消防、路边绿化等用水水源，用水车可在此取水。\n\n[0017]调度控制中心根据雨量，调配泵站的排水能力，泵站利用率高，非工作时泵站集中管理和维护大大延长设备使用时间和降低维护费用，而且可用于其它地区或场合的排涝救灾。本发明无需外接电源，使用灵活方便。采用智能化控制系统，可长期无人值守，自动工作。\n\n[0018]下面结合附图对本发明进行详细说明。\n\n附图说明\n\n[0019]附图1为本发明方法流程示意图。\n\n[0020]附图2为本发明内涝应急处置系统示意图。\n\n[0021]附图3为本发明积水现场水位监测站和流动泵站示意图。\n\n[0022]附图中，1.积水井、1-2.井盖、1-2.1抽水孔、2.排水管道、2-1.应急排水管道、3.泵站安装基座、3-1.梯形凸起、3.2水位监测站、4.流动泵站、4-1.封闭的箱体、4-1.1梯形凹槽、4-2.水泵、4-2.1.进水口、4-2.2出水口、4-3.柴油发电机组、5.调度控制中心、5-1.水位检测仪、5-2.总控中心、6.水泵控制系统、7.积水现场水位监测站、7-1.监测设备箱体、7-2.现场水位监测摄像头、7-3太阳能光伏板、7-4电杆。\n\n具体实施方式\n\n[0023]参考附图，一种城市内涝预前应急处置方法，该方法借助于自带动力源的智能化流动泵站、易发生内涝处的积水井和调度控制中心实现。具体方法如下：\n\n[0024]⑴、在城市的桥梁下、涵洞中或城市低洼处设立积水井、应急排水管道、水位监测系统和流动泵站安装机座，水位监测系统与调度控制中心建立通讯联系：\n\n[0025]⑵、水位监测系统向调度控制中心提供低洼处实时水位和水位变化的图像和数字信息：\n\n[0026]⑶、调度控制中心根据实时天气降雨量和水位监测系统提供低洼处实时水位和水位变化的图像和数字信息，调集一台或多台模块化自带动力源的流动泵站，安装在流动泵站安装机座上，由调度控制中心控制或现场人工控制自带动力源的流动泵站工作，实施对低洼处设立积水井内的积水经应急排水管道排涝；\n\n[0027]⑷、排涝完成后模块化自带动力源的流动泵站调回，集中管理维护。\n\n[0028]本发明采用上述城市内涝预前应急处置方法，该方法在雨季或台风季节，调度控制中心可根据实时天气和现场情况，组织调运流动泵站和流动泵站数量提前到达排涝现场并快速安装在泵站基座上，流动泵站可自行启动排水，调度控制中心实时获得检测仪检测到积水井内水位和积水现场水位监测站的视频摄像头检测到的低洼处的积水情况，远程控制流动泵站开机工作。\n\n[0029]雨季过后，流动泵站调回，集中管理维修，提高设备的使用率。非工作时泵站集中管理和维护大大延长设备使用时间和降低维护费用，而且可用于其它地区或场合的排涝救灾。积水井日常可作为城市道路洒水、路边绿化、消防等用水水源，用水车可在此取水。\n\n[0030]一种城市内涝预前应急处置系统，包括积水井、应急排水管道、泵站和调度控制中心。\n\n[0031]⑴、所述的积水井1为设置在城市低洼处现场的积水井，所述的积水井1与现场城市道路下水排水管道2连通，所述的积水井1地面相邻设置有泵站安装基座3和应急排水管道2-1。\n\n[0032]积水井1与现场城市道路下水排水管道2连通，使排水管道2内的水流向积水井1，积水井1地面相邻设置有泵站安装基座3用于应急排涝时，安装带动力源的流动泵站4，流动泵站4通过应急排水管道2-1排涝。\n\n[0033]⑵、所述的泵站为无人值守智能化的自带动力源的流动泵站4，所述的流动泵站4包括：带检修门的封闭的箱体4-1、水泵4-2、柴油发电机组4-3和与调度控制中心5建立通讯联系的水泵控制系统6，水泵4-2、柴油发电机组4-3和水泵自动控制系统6设置在箱体4-1内，水泵4-2电机与柴油发电机组4-3动力连接，所述的水泵控制系统6与柴油发电机组4-3电连接，所述的水泵4-2的进水口4-2.1和出水口4-2.2分别伸出箱体4-1的外面，并分别与积水井1和应急排水管道2-1连通。\n\n[0034]水泵控制系统6由远端设置的调度控制中心5无线监控，开启蓄电池开关启动柴油发电机组4-3带动水泵4工作经积水井1排涝。\n\n[0035]⑶、所述的调度控制中心5包括：设置在积水现场水位监测站7、设置在积水井1内的水位检测仪5-1和总控中心5-2，所述的水位检测仪5-1与现场水位监测站7建立通讯连接，所述的调度控制中心5内的总控中心5-2与水泵自动控制系统6建立远程通讯控制连接，构成总控中心5-2根据水位检测仪5-1和现场水位监测站7提供的数据和现场图像对箱体4-1内的水泵控制系统6无线远程监视和控制的通讯连接，所述的现场水位监测站7包括：装有电源、通讯模块和充电模块的监测设备箱体7-1、现场水位监测摄像头7-2和太阳能光伏板7-3，现场水位监测摄像头7-2通过监测设备箱体7-1内的通讯模块与总控中心5-2建立通讯连接，太阳能光伏板7-3与监测设备箱体7-1内的充电模块电联接，形成太阳能光伏板7-3对监测设备箱体7-1内的充电模块实施充电的电路结构。\n\n[0036]现场水位监测站7中的现场水位监测摄像头7-2\n\n[0037]水位检测仪5-1用于检测积水井1内的水位，现场水位监测站7中的现场水位监测摄像头7-2用于检测积水井1上面的积水情况，为调度控制中心5提供排涝信息。该系统在极端灾害情况下，还具有向城市预警系统提供报警信号功能。极端灾害可以设定为局部特大水患，路面水位超出车辆通行的安全水位等等。\n\n[0038]本发明实施例中，为便于流动泵站4快速安装，所述的泵站安装基座3上设置有梯形凸起3-1，所述的箱体4-1底部设置有与梯形凸起3-1对应的梯形凹槽4-1.1。箱体4-1底部的梯形凹槽4-1.1与梯形凸起3-1对应的安装。\n\n[0039]本发明实施例中，为适应排涝需要，所述的泵站安装基座3和流动泵站4在积水井1地面相邻设置有两套。在内涝严重时，可安装两套流动泵站4加大排涝流量。\n\n[0040]本发明实施例中，为增加单台流动泵站4的排涝流量和调整流量，所述流动泵站4的水泵4-2设置两台、两台水泵4-2的电机分别经控制电路域柴油发电机组4-3连接。视实际流量需要，决定两台水泵4-2同时开启或单台开启。\n\n[0041]本发明实施例中，为防止积水井1对道路使用的影响，所述的积水井1上设置有井盖1-2，井盖1-2上设置有抽水孔1-2.1。流动泵站4经抽水孔1-2.1抽水排涝。\n\n[0042]本发明实施例中，现场水位监测站7还设有电杆7-4，监测设备箱体7-1、现场水位监测摄像头7-2和太阳能光伏板7-3一次固定安装在电杆7-4上。防止积水对设备的损毁和便于通讯天线的设置。\n\n');
INSERT INTO `os_patent_instruction_text` VALUES (11130, 24068, '技术领域\n\n[0001]本发明涉及供电及管理系统，特别涉及一种充分利用太阳能、风能等绿色能源的城镇公共设施供电及管理系统。\n\n背景技术\n\n[0002]随着城镇化的进展，特别是国家对电力领域实施重大改革，取消原有国家电厂垄断供电的地位，为多种形式的供电用电提供了广阔的发展空间。这其中尤其是以循环节能供电最为先进和环保。城镇公共设施如路灯、交通信号设施以及各种监视系统都需要用电，而这些设施分散在城镇的各处，在使用过程中可以充分地利用太阳能、风能等各种绿色能源，目前，很多地方在为路灯、交通信号设施、城市监视系统等供电时，在路灯灯杆、建筑物以及其它公共设施上安装光伏电池和风力发电机，如在路灯灯杆上安装光伏电池和风力发电机，利用一组蓄电池将光伏电池和风力发电机输出的电力存储，然后在晚上利用蓄电池内存储的电能为路灯供电，目前，有这样的路灯供电及管理系统，该供电及管理系统包括安装在路灯灯杆上的光伏电池和风力发电机和蓄电池组，以及利用光伏电池对蓄电池充电的光伏充电电路和利用风力发电机对蓄电池进行充电的风力发电机充电电路，这两个充电电路一个是将光伏电池输出的直流电压转换成蓄电池充电所需要的电压为蓄电池充电，这是一个DC/DC电路，另一个是将风力发电机输出的交流电转换为蓄电池充电所需要的电压为蓄电池充电，是一个AC/DC电路，目前这样的技术非常成熟，也可以具有较高的转换效率，但是这样有如下问题：\n\n[0003]首先，如果绿色能源如风能和太阳能所产生的电能较多，超过了路灯所需，则超过部分不能充分利用。\n\n[0004]其次，需要对路灯进行改造，由于采用蓄电池直接为路灯供电，为了使效率更高，一般路灯都需要采用直流供电，这使这样的路灯与目前使用市电供电的路灯不兼容。\n\n[0005]最后，为了满足阴雨天路灯照明所需，配备了需要满足7天照明用电的蓄电池，增加了投资。\n\n发明内容\n\n[0006]本发明针对目前采用绿色能源作为城镇公共设施供电及管理系统所带来的上述不足，提供一种城镇公共设施供电管理系统，该系统在现有的城镇公共设施基础上，充分利用光伏电池和风力发电机所提供的电能，并且可以利用现有线路实现与城市电网的有效联动和电量调节。\n\n[0007]本发明所采用的技术方案是：一种城镇公共设施供电管理系统，包括光伏电池、风力发电机和储能装置，所述的光伏电池、风力发电机分别为所述的储能装置充电；还包括现场电站控制柜，所述的储能装置设置在所述的现场电站控制柜内，所述的现场电站控制柜内还设置有与储能装置输出相连的逆变系统和控制管理系统；所述的逆变系统的输出与城镇公共设施的电源输入端以及公共电网相连；在所述的逆变系统的输出与公共电网相连处设置有控制开关；所述的控制管理系统与所述的逆变系统和控制开关的控制端相连。\n\n[0008]本发明的城镇公共设施供电及管理系统由于采用了统一收集光伏电池和风力发电机所产生的绿色能源保存到储能装置中，然后在控制管理系统的控制下，通过逆变系统产生与市电兼容的电压为城镇公共设施供电，这样的系统不需要改造，直接可以利用原来使用市电供电的市政公共设施，不需要对这些系统进行改造，可以节省大量资金，另外，根据公共电网和绿色能源的状态可以将富裕的绿色能源输入到公共电网，在绿色能源不足时，也可以利用公共电网为城镇公共设施供电，以保证城镇公共设施能连续工作。\n\n[0009]本发明的技术方案中，还具有如下的优选方式：\n\n[0010]在所述的城镇公共设施的电源输入端上还设置有变电装置，所述的变电装置源端分别与所述的逆变系统的输出和公共电网相连，变电输出端分别与城镇公共设施的电源输入端相连。所述的城镇公共设施包括路灯、交通信号设施和监视系统。所述的光伏电池和风力发电机分别安装在路灯杆上或者建筑物上。这样，利用变电装置可以准确稳定地为城镇公共设施供电。\n\n[0011]所述的储能装置包括超级电容器。这样，克服目前使用蓄电池存储电力时，由于蓄电池本身使用寿命有限，而废蓄电池本身难以无害化保存的不足。\n\n[0012]以下将结合附图和实施例，对本发明进行较为详细的说明。\n\n附图说明\n\n[0013]图1为本发明的城镇公共设施供电及管理系统框图。\n\n具体实施方式\n\n[0014]实施例1，如图1所示，本实施例是一种依托现有公共设施用电线路，如路灯、交通信号和其他监控设备等的用电线路，采取太阳能、风能等绿色能源实施集中大规模供电的发电系统，是一种充分利用太阳能、风能等绿色能源的公共设施供电及管理系统，如图1所示，本系统是一种采取分散收集太阳能、风能集中存储和管理的系统，与目前所采用的太阳能、风能路灯或者其它公共设施分散收集能源，单独就近为公共设施供电不同。\n\n[0015]本实施例中，利用安装在路灯杆上的光伏电池和/或风能发电机所产生的电力集中存储在一个由超级电容器组成的储能装置中，为了实现区域管理，对于一个在城市来说，本系统可以对一个区域的公共设施供电进行管理，如对方圆几公里范围内的路灯、交通信号灯、监视系统等公共设施及安装在这些公共设施如路灯杆上或者其它建筑物、构筑物上的光伏电池、风力发电机等进行管理，在城市中设置一个管理中心，通过与各本实施例的供电管理系统进行有线或者无线通信，对整个城市的公共设施供电进行管理，如果是一个小城镇，则只需要一个这样的系统。在一个现场电站控制柜中，利用一个控制管理系统实现光伏电池和风能发电机对储能装置充电，当然储能装置目前有很多类型，也可以采用铅酸电池或者超级电容电池等大容量的存储装置。\n\n[0016]在控制管理系统的控制下，安装在各路灯杆、建筑物或者其它设施上的光伏电池的输出利用DC/DC电路产生充电电压为储能装置充电，同样分散安装在路灯杆、建筑物或者其它设施上诸多风力发电机的输出通过AC/DC电路产生充电电压为储能装置充电。\n\n[0017]在现场电站控制柜中，还设置有逆变系统，该逆变系统将储能装置输出的直流电源逆变成0.4KV交流电，与目前使用的市电电网的电压一致，因为目前现有的城镇的公共设施均采用我国标准0.4KV交流电，而各城镇公共设施的电源输入端都需要输入0.4KV的交流电，利用这个0.4KV交流电通过各城镇公共设施内部的电源使用。这样，在整个城镇公共设施中，不需要对原来采用公共电网供电的设备进行改造，直接就可以使用太阳能、风力发电机等产生的绿色能源了，这也是本实施例的一个特点，直接产生与公共电网一致的电压，为任何城市公共设施供电。\n\n[0018]本实施例的主要特点是在现场电站控制柜中设置的控制管理系统，目前，对行业来说，智能控制系统有很多，本领域的技术人员根据需要可以实现很多功能，本实施例中的控制管理系统中包括以下部分：\n\n[0019]A、实现对光伏电池和风力发电机进行控制，如控制对储能装置充电时的充电电路包括AC/DC和DC/DC电路进行控制，使其产生稳定的充电电压，以保证储能装置的使用寿命。因此，在控制管理系统中设置有对充电电路进行控制的控制模块。\n\n[0020]B、对逆变系统进行控制，对储能装置的容量进行检测，如果储能装置的容量较高，而当时城镇公共设施又不需要工作，如白天路灯不需要工作，此时，源源不断的绿色能源输入到储能装置将会超过其额定容量，此时，控制逆变系统工作，产生交流电通过控制开关输入到公共电网，这里，可以采用一个双向计量表。这时，供电及管理系统是一种发电装置，处于发电工况，利用现有城市空间和公用设施空余位置安装太阳能、风能发电设备发电，所发电力利用现状公用设施电缆储存于现场电站控制柜内的光伏风能储能系统，经过并网逆变器将光伏风能储能系统所储存直流电逆变成0.4KV交流电，利用现状公用变压器升压到10KV，利用公用电力电缆线路向市政电网进行馈电；供电局提供的双向计量电表对电量进行计量。因此，在控制管理系统中，设置有对储能装置进行检测的检测装置和对逆变系统进行控制的逆变器控制模块，同时，根据前面对充电电路进行控制的控制模块获得充电指标，决定在什么时候控制逆变装置工作，将储能装置输出的直流电逆变后输入到公共电网，使本系统成为一个绿色能源的发电站。\n\n[0021]C、在城镇公共设施使用时，如果绿色能源不足，控制控制开关闭合，利用市电为城镇公共设施供电，此时，控制管理系统控制逆变系统停止工作。因此，在控制管理系统中设置利用公共电网为城镇公共设施供电的控制模块。\n\n[0022]D、在绿色能源不足时，可以在用电低谷时利用公共电网为储能装置充电，由于不论是光伏电池还是风力发电机，其所产生的电能都与天气有关，本质上是不稳定的，因为，天气变化是无常的，如可能遇到多日阴雨天气，此时光伏电池是没有输出的，但又无风，因此，风力发电机也没有输出，此时，只能利用公共电网为城镇公共设施供电。因此，在控制管理系统中设置有控制公共电网为城镇公共设施供电的控制模块。\n\n[0023]E、目前错峰用电是一种经济的用电方式，因此为了充分利用这套供电及管理系统，控制管理系统可以在用电低谷时，利用公共电网为储能装置充电，在用电高峰时，又可以控制逆变器工作为城镇公共设施供电或者向公共电网发电。这就是一种削峰填谷工况；夜间高峰用电期间，由储能系统储存的电力向城市路灯照明提供电力，同时也可以作为公用电网临时停电的应急电源使用。因此，在控制管理系统还设置利用公共电网为储能装置充电的模块，该模块控制削峰填谷工况。这种情况下可以节省一些资金，如目前的储能系统容量较大，在储能系统充满电时，一种储能系统可供公共设施使用7天左右，也有只能适用于左右的，以下以较大的储能系统为例说明，如果这样大的容量的储能系统用于削峰填谷，将会有效好的经济效益，如有的地方在用电高峰时每度电为1.076元，在用电低谷时，每度电仅仅为0.466元。\n\n[0024]如某地2004年10月起将峰谷时段划分调整为：\n\n[0025]高峰时段：9:00－11:30、14:00－16:30、19:00－21:00（共7小时）；\n\n[0026]平时段：7:00－9:00、11:30－14:00、16:30－19:00、21:00－23:00（共9小时）；\n\n[0027]低谷时段：23:00－次日7:00（共8小时）。峰：1.076元；平：0.796元；谷：0.466元。\n\n[0028]这样，在计算好用电低谷时绿色能源采集量的情况下，在用电低谷时，可以通过公共电网将剩余的容量充满，在用电高峰时，又可以将储能系统中的电能回馈到公共电网中，利用双向计量表，可以计算出差价，如果这套系统的储能装置具备存储10000KVAH的容量时，而该区域绿色能源一天的发电量为20KVAH时，可以在用电低谷时存储8000KVAH的市电，在用电峰值时输出到电网，则理想状态下可以获得5368元的收益，这就是削峰填谷工况能获得较好的经济效益的原因。当然，有的地方对绿色能源入网采用鼓励措施，绿色能源入网时采用较高的价格，就需要将光伏电池和风力发电机所产生的电能另外入网。因此，在控制管理系统中设置有进行削峰填谷工况的控制模块。另外，考虑安全性，本控制管理系统中还可以设置有检测公共电网工作状态的检测装置，当检测到公共电网正在检修等时，可以控制控制开关不闭合，以免对正在进行检修的工人造成伤害。\n\n[0029]F、目前，自动化程度很高，可以在控制管理系统设置通信系统，可以采用目前的GPRS系统或者其它通信系统，实现现场电站控制柜与中心控制系统的通信。\n\n[0030]本实施例的城镇公共设施供电及管理系统主要技术特点在于：1、发挥光风一体化发电的优势，便于在多种天气条件下持续发电；2、利用公用设施空余位置进行安装，利用公用电缆线路进行馈电，大大节省安装费用。如：高速公路、快速路、市政路的照明监控设施、防噪遮音设施、公交站点、城市高耸建筑屋顶等采光良好、过风顺畅的位置来安装；3、循环电力供应，可以起到城市用电“削峰填谷”作用，平衡电力需求，成为城市公共用电的有力补充；4、具有良好的经济效益。在国家电改大背景下，能够通过自主发电来降低用电成本，创造经济效益，可利用不同时段的用电差价来进行电量调配，增大经济效益；5、绿色节能。能大大减少火电等耗能发电的资源消耗，减少环境污染；6、本系统采用太阳能电池板发电和风能发电机发电，光伏风能储能系统采用超级电容器器储存电力；7、利于城市路灯节能改造，节省节能改造费用；8、节省公共用电的电费财政支出；9、本系统采用超级电容器储能，无蓄电池，节省运行维护费用和蓄电池二次处理费用，有效避免了处理蓄电池对环境的二次污染；10、支持国家产业发展，采用光风一体化城市循环节能发电系统可以消化解决太阳能电池产能过剩难题。\n\n', '技术领域\n\n[0001]本发明涉及供电及管理系统，特别涉及一种充分利用太阳能、风能等绿色能源的城镇公共设施供电及管理系统。\n\n背景技术\n\n[0002]随着城镇化的进展，特别是国家对电力领域实施重大改革，取消原有国家电厂垄断供电的地位，为多种形式的供电用电提供了广阔的发展空间。这其中尤其是以循环节能供电最为先进和环保。城镇公共设施如路灯、交通信号设施以及各种监视系统都需要用电，而这些设施分散在城镇的各处，在使用过程中可以充分地利用太阳能、风能等各种绿色能源，目前，很多地方在为路灯、交通信号设施、城市监视系统等供电时，在路灯灯杆、建筑物以及其它公共设施上安装光伏电池和风力发电机，如在路灯灯杆上安装光伏电池和风力发电机，利用一组蓄电池将光伏电池和风力发电机输出的电力存储，然后在晚上利用蓄电池内存储的电能为路灯供电，目前，有这样的路灯供电及管理系统，该供电及管理系统包括安装在路灯灯杆上的光伏电池和风力发电机和蓄电池组，以及利用光伏电池对蓄电池充电的光伏充电电路和利用风力发电机对蓄电池进行充电的风力发电机充电电路，这两个充电电路一个是将光伏电池输出的直流电压转换成蓄电池充电所需要的电压为蓄电池充电，这是一个DC/DC电路，另一个是将风力发电机输出的交流电转换为蓄电池充电所需要的电压为蓄电池充电，是一个AC/DC电路，目前这样的技术非常成熟，也可以具有较高的转换效率，但是这样有如下问题：\n\n[0003]首先，如果绿色能源如风能和太阳能所产生的电能较多，超过了路灯所需，则超过部分不能充分利用。\n\n[0004]其次，需要对路灯进行改造，由于采用蓄电池直接为路灯供电，为了使效率更高，一般路灯都需要采用直流供电，这使这样的路灯与目前使用市电供电的路灯不兼容。\n\n[0005]最后，为了满足阴雨天路灯照明所需，配备了需要满足7天照明用电的蓄电池，增加了投资。\n\n发明内容\n\n[0006]本发明针对目前采用绿色能源作为城镇公共设施供电及管理系统所带来的上述不足，提供一种城镇公共设施供电管理系统，该系统在现有的城镇公共设施基础上，充分利用光伏电池和风力发电机所提供的电能，并且可以利用现有线路实现与城市电网的有效联动和电量调节。\n\n[0007]本发明所采用的技术方案是：一种城镇公共设施供电管理系统，包括光伏电池、风力发电机和储能装置，所述的光伏电池、风力发电机分别为所述的储能装置充电；还包括现场电站控制柜，所述的储能装置设置在所述的现场电站控制柜内，所述的现场电站控制柜内还设置有与储能装置输出相连的逆变系统和控制管理系统；所述的逆变系统的输出与城镇公共设施的电源输入端以及公共电网相连；在所述的逆变系统的输出与公共电网相连处设置有控制开关；所述的控制管理系统与所述的逆变系统和控制开关的控制端相连。\n\n[0008]本发明的城镇公共设施供电及管理系统由于采用了统一收集光伏电池和风力发电机所产生的绿色能源保存到储能装置中，然后在控制管理系统的控制下，通过逆变系统产生与市电兼容的电压为城镇公共设施供电，这样的系统不需要改造，直接可以利用原来使用市电供电的市政公共设施，不需要对这些系统进行改造，可以节省大量资金，另外，根据公共电网和绿色能源的状态可以将富裕的绿色能源输入到公共电网，在绿色能源不足时，也可以利用公共电网为城镇公共设施供电，以保证城镇公共设施能连续工作。\n\n[0009]本发明的技术方案中，还具有如下的优选方式：\n\n[0010]在所述的城镇公共设施的电源输入端上还设置有变电装置，所述的变电装置源端分别与所述的逆变系统的输出和公共电网相连，变电输出端分别与城镇公共设施的电源输入端相连。所述的城镇公共设施包括路灯、交通信号设施和监视系统。所述的光伏电池和风力发电机分别安装在路灯杆上或者建筑物上。这样，利用变电装置可以准确稳定地为城镇公共设施供电。\n\n[0011]所述的储能装置包括超级电容器。这样，克服目前使用蓄电池存储电力时，由于蓄电池本身使用寿命有限，而废蓄电池本身难以无害化保存的不足。\n\n[0012]以下将结合附图和实施例，对本发明进行较为详细的说明。\n\n附图说明\n\n[0013]图1为本发明的城镇公共设施供电及管理系统框图。\n\n具体实施方式\n\n[0014]实施例1，如图1所示，本实施例是一种依托现有公共设施用电线路，如路灯、交通信号和其他监控设备等的用电线路，采取太阳能、风能等绿色能源实施集中大规模供电的发电系统，是一种充分利用太阳能、风能等绿色能源的公共设施供电及管理系统，如图1所示，本系统是一种采取分散收集太阳能、风能集中存储和管理的系统，与目前所采用的太阳能、风能路灯或者其它公共设施分散收集能源，单独就近为公共设施供电不同。\n\n[0015]本实施例中，利用安装在路灯杆上的光伏电池和/或风能发电机所产生的电力集中存储在一个由超级电容器组成的储能装置中，为了实现区域管理，对于一个在城市来说，本系统可以对一个区域的公共设施供电进行管理，如对方圆几公里范围内的路灯、交通信号灯、监视系统等公共设施及安装在这些公共设施如路灯杆上或者其它建筑物、构筑物上的光伏电池、风力发电机等进行管理，在城市中设置一个管理中心，通过与各本实施例的供电管理系统进行有线或者无线通信，对整个城市的公共设施供电进行管理，如果是一个小城镇，则只需要一个这样的系统。在一个现场电站控制柜中，利用一个控制管理系统实现光伏电池和风能发电机对储能装置充电，当然储能装置目前有很多类型，也可以采用铅酸电池或者超级电容电池等大容量的存储装置。\n\n[0016]在控制管理系统的控制下，安装在各路灯杆、建筑物或者其它设施上的光伏电池的输出利用DC/DC电路产生充电电压为储能装置充电，同样分散安装在路灯杆、建筑物或者其它设施上诸多风力发电机的输出通过AC/DC电路产生充电电压为储能装置充电。\n\n[0017]在现场电站控制柜中，还设置有逆变系统，该逆变系统将储能装置输出的直流电源逆变成0.4KV交流电，与目前使用的市电电网的电压一致，因为目前现有的城镇的公共设施均采用我国标准0.4KV交流电，而各城镇公共设施的电源输入端都需要输入0.4KV的交流电，利用这个0.4KV交流电通过各城镇公共设施内部的电源使用。这样，在整个城镇公共设施中，不需要对原来采用公共电网供电的设备进行改造，直接就可以使用太阳能、风力发电机等产生的绿色能源了，这也是本实施例的一个特点，直接产生与公共电网一致的电压，为任何城市公共设施供电。\n\n[0018]本实施例的主要特点是在现场电站控制柜中设置的控制管理系统，目前，对行业来说，智能控制系统有很多，本领域的技术人员根据需要可以实现很多功能，本实施例中的控制管理系统中包括以下部分：\n\n[0019]A、实现对光伏电池和风力发电机进行控制，如控制对储能装置充电时的充电电路包括AC/DC和DC/DC电路进行控制，使其产生稳定的充电电压，以保证储能装置的使用寿命。因此，在控制管理系统中设置有对充电电路进行控制的控制模块。\n\n[0020]B、对逆变系统进行控制，对储能装置的容量进行检测，如果储能装置的容量较高，而当时城镇公共设施又不需要工作，如白天路灯不需要工作，此时，源源不断的绿色能源输入到储能装置将会超过其额定容量，此时，控制逆变系统工作，产生交流电通过控制开关输入到公共电网，这里，可以采用一个双向计量表。这时，供电及管理系统是一种发电装置，处于发电工况，利用现有城市空间和公用设施空余位置安装太阳能、风能发电设备发电，所发电力利用现状公用设施电缆储存于现场电站控制柜内的光伏风能储能系统，经过并网逆变器将光伏风能储能系统所储存直流电逆变成0.4KV交流电，利用现状公用变压器升压到10KV，利用公用电力电缆线路向市政电网进行馈电；供电局提供的双向计量电表对电量进行计量。因此，在控制管理系统中，设置有对储能装置进行检测的检测装置和对逆变系统进行控制的逆变器控制模块，同时，根据前面对充电电路进行控制的控制模块获得充电指标，决定在什么时候控制逆变装置工作，将储能装置输出的直流电逆变后输入到公共电网，使本系统成为一个绿色能源的发电站。\n\n[0021]C、在城镇公共设施使用时，如果绿色能源不足，控制控制开关闭合，利用市电为城镇公共设施供电，此时，控制管理系统控制逆变系统停止工作。因此，在控制管理系统中设置利用公共电网为城镇公共设施供电的控制模块。\n\n[0022]D、在绿色能源不足时，可以在用电低谷时利用公共电网为储能装置充电，由于不论是光伏电池还是风力发电机，其所产生的电能都与天气有关，本质上是不稳定的，因为，天气变化是无常的，如可能遇到多日阴雨天气，此时光伏电池是没有输出的，但又无风，因此，风力发电机也没有输出，此时，只能利用公共电网为城镇公共设施供电。因此，在控制管理系统中设置有控制公共电网为城镇公共设施供电的控制模块。\n\n[0023]E、目前错峰用电是一种经济的用电方式，因此为了充分利用这套供电及管理系统，控制管理系统可以在用电低谷时，利用公共电网为储能装置充电，在用电高峰时，又可以控制逆变器工作为城镇公共设施供电或者向公共电网发电。这就是一种削峰填谷工况；夜间高峰用电期间，由储能系统储存的电力向城市路灯照明提供电力，同时也可以作为公用电网临时停电的应急电源使用。因此，在控制管理系统还设置利用公共电网为储能装置充电的模块，该模块控制削峰填谷工况。这种情况下可以节省一些资金，如目前的储能系统容量较大，在储能系统充满电时，一种储能系统可供公共设施使用7天左右，也有只能适用于左右的，以下以较大的储能系统为例说明，如果这样大的容量的储能系统用于削峰填谷，将会有效好的经济效益，如有的地方在用电高峰时每度电为1.076元，在用电低谷时，每度电仅仅为0.466元。\n\n[0024]如某地2004年10月起将峰谷时段划分调整为：\n\n[0025]高峰时段：9:00－11:30、14:00－16:30、19:00－21:00（共7小时）；\n\n[0026]平时段：7:00－9:00、11:30－14:00、16:30－19:00、21:00－23:00（共9小时）；\n\n[0027]低谷时段：23:00－次日7:00（共8小时）。峰：1.076元；平：0.796元；谷：0.466元。\n\n[0028]这样，在计算好用电低谷时绿色能源采集量的情况下，在用电低谷时，可以通过公共电网将剩余的容量充满，在用电高峰时，又可以将储能系统中的电能回馈到公共电网中，利用双向计量表，可以计算出差价，如果这套系统的储能装置具备存储10000KVAH的容量时，而该区域绿色能源一天的发电量为20KVAH时，可以在用电低谷时存储8000KVAH的市电，在用电峰值时输出到电网，则理想状态下可以获得5368元的收益，这就是削峰填谷工况能获得较好的经济效益的原因。当然，有的地方对绿色能源入网采用鼓励措施，绿色能源入网时采用较高的价格，就需要将光伏电池和风力发电机所产生的电能另外入网。因此，在控制管理系统中设置有进行削峰填谷工况的控制模块。另外，考虑安全性，本控制管理系统中还可以设置有检测公共电网工作状态的检测装置，当检测到公共电网正在检修等时，可以控制控制开关不闭合，以免对正在进行检修的工人造成伤害。\n\n[0029]F、目前，自动化程度很高，可以在控制管理系统设置通信系统，可以采用目前的GPRS系统或者其它通信系统，实现现场电站控制柜与中心控制系统的通信。\n\n[0030]本实施例的城镇公共设施供电及管理系统主要技术特点在于：1、发挥光风一体化发电的优势，便于在多种天气条件下持续发电；2、利用公用设施空余位置进行安装，利用公用电缆线路进行馈电，大大节省安装费用。如：高速公路、快速路、市政路的照明监控设施、防噪遮音设施、公交站点、城市高耸建筑屋顶等采光良好、过风顺畅的位置来安装；3、循环电力供应，可以起到城市用电“削峰填谷”作用，平衡电力需求，成为城市公共用电的有力补充；4、具有良好的经济效益。在国家电改大背景下，能够通过自主发电来降低用电成本，创造经济效益，可利用不同时段的用电差价来进行电量调配，增大经济效益；5、绿色节能。能大大减少火电等耗能发电的资源消耗，减少环境污染；6、本系统采用太阳能电池板发电和风能发电机发电，光伏风能储能系统采用超级电容器器储存电力；7、利于城市路灯节能改造，节省节能改造费用；8、节省公共用电的电费财政支出；9、本系统采用超级电容器储能，无蓄电池，节省运行维护费用和蓄电池二次处理费用，有效避免了处理蓄电池对环境的二次污染；10、支持国家产业发展，采用光风一体化城市循环节能发电系统可以消化解决太阳能电池产能过剩难题。\n\n');
INSERT INTO `os_patent_instruction_text` VALUES (11131, 24069, '技术领域\n\n[0001]本发明涉及电子技术，尤其涉及一种车载终端、路侧设备和智能家居系统。\n\n背景技术\n\n[0002]随着互联网技术的不断发展，智能家居技术也开始得到重视。智能家居可以通过物联网技术将家中的各种家居设备，比如音视频设备、照明系统、窗帘控制、空调控制、安防系统、数字影院系统、影音服务器、影柜系统和网络家电等，连接到一起，提供家电控制、照明控制、电话远程控制、室内外遥控、防盗报警、环境监测、暖通控制、红外转发以及可编程定时控制等多种功能和手段。与普通家居相比，智能家居不仅具有传统的居住功能，兼备建筑、网络通信、信息家电、设备自动化，提供全方位的信息交互功能，甚至为各种能源费用节约资金。\n\n[0003]但现有技术中的智能家居必须通过手机或遥控器对家居设备进行控制，因此，在用户驾车外出过程中若忘记携带手机或遥控器，或者手机或遥控器恰好电量不足，则无法对这些家居设备进行控制。\n\n发明内容\n\n[0004]本发明实施例提供的车载终端、路侧设备和智能家居系统，用于解决现有技术中对家居设备的控制方法不灵活，在用户忘记携带手机或遥控器，或者手机或遥控器恰好电量不足，则无法对这些家居设备进行控制的技术问题。\n\n[0005]为达到上述目的，本发明的实施例采用如下技术方案。\n\n[0006]第一方面，提供了车载终端，包括：输入模块、处理器和发送器；所述输入模块和所述发送器分别与所述处理器电连接；\n\n[0007]所述输入模块，用于用户输入家居控制指令；\n\n[0008]所述处理器，用于对所述家居控制指令进行识别和解析，获得控制命令原语；\n\n[0009]所述发送器，用于通过空中接口，向基站或路侧设备发送所述控制命令原语，以使所述基站或路侧设备向智能家居控制平台转发所述控制命令原语。\n\n[0010]第二方面，提供了一种路侧设备，包括：接收器、处理器和发送器；所述接收器、所述发送器分别与所述处理器电连接；\n\n[0011]所述接收器，用于基于车辆对周围设备(Vehicle to X，V2X)通信方式，接收车载终端发送的控制命令原语；\n\n[0012]所述处理器，用于将所述控制命令原语封装为以太网报文；\n\n[0013]所述发送器，用于通过以太网，向所述智能家居控制平台发送携带所述控制命令原语的以太网报文。\n\n[0014]第三方面，提供了一种智能家居系统，包括如上所述的车载终端，以及如上所述的路侧设备，以及智能家居控制平台，以及家居设备；\n\n[0015]所述智能家居控制平台，用于通过以太网，接收所述车载终端通过所述路侧设备发送的控制命令原语，以及控制所述控制命令原语中的待操作的家居设备执行所述控制命令原语中的操作内容；\n\n[0016]所述家居设备，用于在所述智能家居控制平台的控制下，执行所述控制命令原语中的操作内容。\n\n[0017]第四方面，提供了一种智能家居系统，包括：如上所述的车载终端，以及基站，以及智能家居控制平台，以及家居设备；\n\n[0018]所述基站，用于通过空中接口接收所述车载终端发送的控制命令原语，以及通过以太网，向所述智能家居控制平台转发所述控制命令原语；\n\n[0019]所述智能家居控制平台，用于通过以太网，接收所述车载终端通过所述基站发送的控制命令原语，以及控制所述控制命令原语中的待操作的家居设备执行所述控制命令原语中的操作内容；\n\n[0020]所述家居设备，用于在所述智能家居控制平台的控制下，执行所述控制命令原语中的操作内容。\n\n[0021]本发明实施例中，车载终端包括输入模块、发送器和处理器，用户通过车载终端的输入模块输入家居控制指令，进而处理器对家居控制指令进行识别和解析，获得控制命令原语，并由发送器通过空中接口，向基站或路侧设备发送该控制命令原语，以使所述基站或路侧设备向智能家居控制平台转发该控制命令原语，实现对智能家居平台所连接的智能家居设备的控制，解决了现有技术中对家居设备的控制方法不灵活，在用户忘记携带手机或遥控器，或者手机或遥控器恰好电量不足，则无法对这些家居设备进行控制的技术问题。\n\n附图说明\n\n[0022]图1为本发明实施例提供的一种车载终端的结构示意图；\n\n[0023]图2为本发明实施例二提供的另一种车载终端的结构示意图；\n\n[0024]图3为本发明实施例三提供的一种路侧设备的结构示意图；\n\n[0025]图4为实施例四提供的一种智能家居系统的结构示意图；\n\n[0026]图5为实施例五提供的另一种智能家居系统的结构示意图。\n\n具体实施方式\n\n[0027]下面结合附图对本发明实施例中车载终端、路侧设备和智能家居系统进行详细描述。\n\n[0028]实施例一\n\n[0029]图1为本发明实施例提供的一种车载终端的结构示意图，如图1所示，包括：输入模块11、处理器12和发送器13。其中，输入模块11和发送器13分别与处理器12电连接。\n\n[0030]输入模块11，用于用户输入家居控制指令。\n\n[0031]其中，输入模块11可以包括：触摸屏和/或话筒。\n\n[0032]具体的，用户通过输入模块11中的触摸屏或者话筒，输入家居控制指令，该家居控制指令可以包括：待操作的家居设备和操作内容。\n\n[0033]处理器12，用于对所述家居控制指令进行识别和解析，获得控制命令原语。\n\n[0034]具体的，处理器12对用户输入的家居控制指令进行识别，从而获得待操作的家居设备的代码和操作内容的代码，进而对家居设备的代码和操作内容的代码进行解析，获得控制命令原语。\n\n[0035]发送器13，用于通过空中接口，向基站或路侧设备发送所述控制命令原语，以使所述基站或路侧设备向智能家居控制平台转发所述控制命令原语。\n\n[0036]具体的，发送器13通过预先配置的空中接口，向基站或者路侧设备发送该控制命令原语。该空中接口可以是基于V2X通信方式，或者基于3G通信方式或者基于4G通信方式。\n\n[0037]基于此，发送器13可以包括V2X通信芯片、3G通信芯片和4G通信芯片中的至少一个。\n\n[0038]本实施例中，用户通过输入模块输入家居控制指令，进而处理器对家居控制指令进行识别和解析，获得控制命令原语，并由发送器通过空中接口，向基站或路侧设备发送该控制命令原语，以使所述基站或路侧设备向智能家居控制平台转发该控制命令原语，实现对智能家居平台所连接的智能家居设备的控制，解决了现有技术中对家居设备的控制方法不灵活，在用户忘记携带手机或遥控器，或者手机或遥控器恰好电量不足，则无法对这些家居设备进行控制的技术问题。\n\n[0039]实施例二\n\n[0040]图2为本发明实施例二提供的另一种车载终端的结构示意图，如图2所示，在实施例一的基础上，本实施例中的发送器13包括：V2X通信电路131、3G通信电路132和4G通信电路133。\n\n[0041]发送器13，还包括：选择电路134和信号检测电路135。其中，选择电路134、V2X通信电路131、所述3G通信电路132和所述4G通信电路133分别与所述信号检测电路135电连接；所述V2X通信电路131、所述3G通信电路132和所述4G通信电路133分别与所述选择电路134电连接。\n\n[0042]其中，信号检测电路135，用于检测所述V2X通信电路131、3G通信电路132和4G通信电路133的信号质量。\n\n[0043]选择电路134，用于从所述V2X通信电路131、3G通信电路132和4G通信电路133中选择信号质量最优的目标通信电路，利用所述目标通信电路对应的参数对空中接口进行参数配置。\n\n[0044]V2X通信电路131，用于利用参数配置后的空中接口，基于V2X通信方式向路侧设备发送所述控制命令原语。\n\n[0045]3G通信电路132，用于利用参数配置后的空中接口，基于3G通信方式向所述基站发送所述控制命令原语；\n\n[0046]4G通信电路133，用于利用参数配置后的空中接口，基于4G通信方式向所述基站发送所述控制命令原语。\n\n[0047]也就是说，V2X通信电路131基于V2X通信方式与路侧设备建立有通信连接。3G通信电路132基于4G通信方式与基站建立有通信连接。4G通信电路133基于4G通信方式与基站建立有通信连接。\n\n[0048]当发送器13从处理器12获得控制命令原语之后，信号检测电路135检测V2X通信电路131、3G通信电路132和4G通信电路133的信号质量。选择电路134从V2X通信电路131、3G通信电路132和4G通信电路133中选择信号质量最优的目标通信电路，利用目标通信电路对应的参数对空中接口进行参数配置。\n\n[0049]例如：若该目标通信电路为V2X通信电路，则V2X通信电路利用V2X参数配置后的空中接口，基于V2X通信方式向所述路侧设备发送所述控制命令原语。\n\n[0050]又例如：若该目标通信电路为3G通信电路，则3G通信电路利用3G参数配置后的空中接口，基于3G通信方式向所述基站发送所述控制命令原语。\n\n[0051]再例如：若该目标通信电路为4G通信电路，则4G通信电路利用4G参数配置后的空中接口，基于4G通信方式向所述基站发送所述控制命令原语。\n\n[0052]这是由于，V2X是一种近距离通信方式，容易出现信号较弱，甚至没有信号的情况出现，同时，4G网络的覆盖范围较小，也容易出现信号较弱，甚至没有信号的情况出现，而3G网络的传输速率较低，因此，通过从V2X通信电路、3G通信电路和4G通信电路中选择信号质量最优的进行向基站或路侧设备发送该控制命令原语，提高了发送该控制原语的效率。\n\n[0053]本实施例中，车载终端包括输入模块、发送器和处理器，用户通过车载终端的输入模块输入家居控制指令，进而处理器对家居控制指令进行识别和解析，获得控制命令原语，并由发送器通过空中接口，向基站或路侧设备发送该控制命令原语，以使所述基站或路侧设备向智能家居控制平台转发该控制命令原语，实现对智能家居平台所连接的智能家居设备的控制，解决了现有技术中对家居设备的控制方法不灵活，在用户忘记携带手机或遥控器，或者手机或遥控器恰好电量不足，则无法对这些家居设备进行控制的技术问题。同时，采用从V2X通信电路、3G通信电路和4G通信电路中选择信号质量最优的进行向基站或路侧设备发送该控制命令原语，提高了发送该控制原语的效率。\n\n[0054]实施例三\n\n[0055]图3为本发明实施例三提供的一种路侧设备的结构示意图，如图3所示，包括：接收器31、处理器32和发送器33。接收器31、发送器33分别与处理器32电连接。\n\n[0056]接收器31，基于V2X通信方式，接收车载终端发送的控制命令原语；\n\n[0057]处理器32，将所述控制命令原语封装为以太网报文；\n\n[0058]发送器33，通过以太网，向所述智能家居控制平台发送携带所述控制命令原语的以太网报文。\n\n[0059]具体的，一方面，路侧设备基于V2X通信方式与车载设备交互，另一方面，路侧设备基于以太网与智能家居控制平台交互。若路侧设备的接收器31接收车载终端发送的控制命令原语，则处理器32对该控制命令原语封装为以太网报文，以使发送器33通过以太网，向所述智能家居控制平台发送携带所述控制命令原语的以太网报文。\n\n[0060]本实施例中，通过路侧设备的接收器31接收车载终端发送的控制命令原语时，处理器32对该控制命令原语封装为以太网报文，以使发送器33通过以太网，向所述智能家居控制平台发送携带所述控制命令原语的以太网报文，解决了现有技术中对家居设备的控制方法不灵活，在用户忘记携带手机或遥控器，或者手机或遥控器恰好电量不足，则无法对这些家居设备进行控制的技术问题。\n\n[0061]实施例四\n\n[0062]图4为实施例四提供的一种智能家居系统的结构示意图，如图4所示，智能家居系统包括：前述实施例中的车载终端，以及前述实施例中的路侧设备，以及智能家居控制平台，以及家居设备。\n\n[0063]智能家居控制平台，用于通过以太网，接收所述车载终端通过所述路侧设备发送的控制命令原语，以及控制所述控制命令原语中的待操作的家居设备执行所述控制命令原语中的操作内容。\n\n[0064]家居设备，用于在所述智能家居控制平台的控制下，执行所述控制命令原语中的操作内容。\n\n[0065]具体的，车载终端在用户输入家居控制指令后，对所述家居控制指令进行识别和解析，获得控制命令原语，进而通过空中接口，向路侧设备发送该控制命令原语，以使路侧设备向智能家居控制平台转发所述控制命令原语。进而，路侧设备通过空中接口接收所述车载终端发送的控制命令原语，以及通过以太网，向所述智能家居控制平台转发所述控制命令原语。智能家居控制平台通过以太网，接收车载终端通过路侧设备发送的控制命令原语，以及控制所述控制命令原语中的待操作的家居设备执行所述控制命令原语中的操作内容。家居设备在所述智能家居控制平台的控制下，执行所述控制命令原语中的操作内容。\n\n[0066]本实施例中，通过路侧设备接收车载终端发送的控制命令原语，进而路侧设备，向智能家居控制平台发送携带控制命令原语的以太网报文，解决了现有技术中对家居设备的控制方法不灵活，在用户忘记携带手机或遥控器，或者手机或遥控器恰好电量不足，则无法对这些家居设备进行控制的技术问题。\n\n[0067]实施例五\n\n[0068]图5为实施例五提供的另一种智能家居系统的结构示意图，如图5所示，智能家居系统包括：前述实施例中的车载终端，以及基站，以及智能家居控制平台，以及家居设备。\n\n[0069]基站，用于通过空中接口接收所述车载终端发送的控制命令原语，以及通过以太网，向所述智能家居控制平台转发所述控制命令原语。\n\n[0070]智能家居控制平台，用于通过以太网，接收所述车载终端通过所述路侧设备发送的控制命令原语，以及控制所述控制命令原语中的待操作的家居设备执行所述控制命令原语中的操作内容。\n\n[0071]家居设备，用于在所述智能家居控制平台的控制下，执行所述控制命令原语中的操作内容。\n\n[0072]具体的，车载终端在用户输入家居控制指令后，对所述家居控制指令进行识别和解析，获得控制命令原语，进而通过空中接口，向基站发送该控制命令原语，以使所述基站向智能家居控制平台转发所述控制命令原语。进而，基站通过空中接口接收所述车载终端发送的控制命令原语，以及通过以太网，向所述智能家居控制平台转发所述控制命令原语。智能家居控制平台通过以太网，接收车载终端通过基站发送的控制命令原语，以及控制所述控制命令原语中的待操作的家居设备执行所述控制命令原语中的操作内容。家居设备在所述智能家居控制平台的控制下，执行所述控制命令原语中的操作内容。\n\n[0073]本实施例中，通过基站接收车载终端发送的控制命令原语，进而基站，向智能家居控制平台发送携带控制命令原语的以太网报文，解决了现有技术中对家居设备的控制方法不灵活，在用户忘记携带手机或遥控器，或者手机或遥控器恰好电量不足，则无法对这些家居设备进行控制的技术问题。\n\n[0074]本领域普通技术人员可以理解：实现上述各方法实施例的全部或部分步骤可以通过程序指令相关的硬件来完成。前述的程序可以存储于一计算机可读取存储介质中。该程序在执行时，执行包括上述各方法实施例的步骤；而前述的存储介质包括：ROM、RAM、磁碟或者光盘等各种可以存储程序代码的介质。\n\n[0075]最后应说明的是：以上各实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述各实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分或者全部技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。\n\n', '技术领域\n\n[0001]本发明涉及电子技术，尤其涉及一种车载终端、路侧设备和智能家居系统。\n\n背景技术\n\n[0002]随着互联网技术的不断发展，智能家居技术也开始得到重视。智能家居可以通过物联网技术将家中的各种家居设备，比如音视频设备、照明系统、窗帘控制、空调控制、安防系统、数字影院系统、影音服务器、影柜系统和网络家电等，连接到一起，提供家电控制、照明控制、电话远程控制、室内外遥控、防盗报警、环境监测、暖通控制、红外转发以及可编程定时控制等多种功能和手段。与普通家居相比，智能家居不仅具有传统的居住功能，兼备建筑、网络通信、信息家电、设备自动化，提供全方位的信息交互功能，甚至为各种能源费用节约资金。\n\n[0003]但现有技术中的智能家居必须通过手机或遥控器对家居设备进行控制，因此，在用户驾车外出过程中若忘记携带手机或遥控器，或者手机或遥控器恰好电量不足，则无法对这些家居设备进行控制。\n\n发明内容\n\n[0004]本发明实施例提供的车载终端、路侧设备和智能家居系统，用于解决现有技术中对家居设备的控制方法不灵活，在用户忘记携带手机或遥控器，或者手机或遥控器恰好电量不足，则无法对这些家居设备进行控制的技术问题。\n\n[0005]为达到上述目的，本发明的实施例采用如下技术方案。\n\n[0006]第一方面，提供了车载终端，包括：输入模块、处理器和发送器；所述输入模块和所述发送器分别与所述处理器电连接；\n\n[0007]所述输入模块，用于用户输入家居控制指令；\n\n[0008]所述处理器，用于对所述家居控制指令进行识别和解析，获得控制命令原语；\n\n[0009]所述发送器，用于通过空中接口，向基站或路侧设备发送所述控制命令原语，以使所述基站或路侧设备向智能家居控制平台转发所述控制命令原语。\n\n[0010]第二方面，提供了一种路侧设备，包括：接收器、处理器和发送器；所述接收器、所述发送器分别与所述处理器电连接；\n\n[0011]所述接收器，用于基于车辆对周围设备(Vehicle to X，V2X)通信方式，接收车载终端发送的控制命令原语；\n\n[0012]所述处理器，用于将所述控制命令原语封装为以太网报文；\n\n[0013]所述发送器，用于通过以太网，向所述智能家居控制平台发送携带所述控制命令原语的以太网报文。\n\n[0014]第三方面，提供了一种智能家居系统，包括如上所述的车载终端，以及如上所述的路侧设备，以及智能家居控制平台，以及家居设备；\n\n[0015]所述智能家居控制平台，用于通过以太网，接收所述车载终端通过所述路侧设备发送的控制命令原语，以及控制所述控制命令原语中的待操作的家居设备执行所述控制命令原语中的操作内容；\n\n[0016]所述家居设备，用于在所述智能家居控制平台的控制下，执行所述控制命令原语中的操作内容。\n\n[0017]第四方面，提供了一种智能家居系统，包括：如上所述的车载终端，以及基站，以及智能家居控制平台，以及家居设备；\n\n[0018]所述基站，用于通过空中接口接收所述车载终端发送的控制命令原语，以及通过以太网，向所述智能家居控制平台转发所述控制命令原语；\n\n[0019]所述智能家居控制平台，用于通过以太网，接收所述车载终端通过所述基站发送的控制命令原语，以及控制所述控制命令原语中的待操作的家居设备执行所述控制命令原语中的操作内容；\n\n[0020]所述家居设备，用于在所述智能家居控制平台的控制下，执行所述控制命令原语中的操作内容。\n\n[0021]本发明实施例中，车载终端包括输入模块、发送器和处理器，用户通过车载终端的输入模块输入家居控制指令，进而处理器对家居控制指令进行识别和解析，获得控制命令原语，并由发送器通过空中接口，向基站或路侧设备发送该控制命令原语，以使所述基站或路侧设备向智能家居控制平台转发该控制命令原语，实现对智能家居平台所连接的智能家居设备的控制，解决了现有技术中对家居设备的控制方法不灵活，在用户忘记携带手机或遥控器，或者手机或遥控器恰好电量不足，则无法对这些家居设备进行控制的技术问题。\n\n附图说明\n\n[0022]图1为本发明实施例提供的一种车载终端的结构示意图；\n\n[0023]图2为本发明实施例二提供的另一种车载终端的结构示意图；\n\n[0024]图3为本发明实施例三提供的一种路侧设备的结构示意图；\n\n[0025]图4为实施例四提供的一种智能家居系统的结构示意图；\n\n[0026]图5为实施例五提供的另一种智能家居系统的结构示意图。\n\n具体实施方式\n\n[0027]下面结合附图对本发明实施例中车载终端、路侧设备和智能家居系统进行详细描述。\n\n[0028]实施例一\n\n[0029]图1为本发明实施例提供的一种车载终端的结构示意图，如图1所示，包括：输入模块11、处理器12和发送器13。其中，输入模块11和发送器13分别与处理器12电连接。\n\n[0030]输入模块11，用于用户输入家居控制指令。\n\n[0031]其中，输入模块11可以包括：触摸屏和/或话筒。\n\n[0032]具体的，用户通过输入模块11中的触摸屏或者话筒，输入家居控制指令，该家居控制指令可以包括：待操作的家居设备和操作内容。\n\n[0033]处理器12，用于对所述家居控制指令进行识别和解析，获得控制命令原语。\n\n[0034]具体的，处理器12对用户输入的家居控制指令进行识别，从而获得待操作的家居设备的代码和操作内容的代码，进而对家居设备的代码和操作内容的代码进行解析，获得控制命令原语。\n\n[0035]发送器13，用于通过空中接口，向基站或路侧设备发送所述控制命令原语，以使所述基站或路侧设备向智能家居控制平台转发所述控制命令原语。\n\n[0036]具体的，发送器13通过预先配置的空中接口，向基站或者路侧设备发送该控制命令原语。该空中接口可以是基于V2X通信方式，或者基于3G通信方式或者基于4G通信方式。\n\n[0037]基于此，发送器13可以包括V2X通信芯片、3G通信芯片和4G通信芯片中的至少一个。\n\n[0038]本实施例中，用户通过输入模块输入家居控制指令，进而处理器对家居控制指令进行识别和解析，获得控制命令原语，并由发送器通过空中接口，向基站或路侧设备发送该控制命令原语，以使所述基站或路侧设备向智能家居控制平台转发该控制命令原语，实现对智能家居平台所连接的智能家居设备的控制，解决了现有技术中对家居设备的控制方法不灵活，在用户忘记携带手机或遥控器，或者手机或遥控器恰好电量不足，则无法对这些家居设备进行控制的技术问题。\n\n[0039]实施例二\n\n[0040]图2为本发明实施例二提供的另一种车载终端的结构示意图，如图2所示，在实施例一的基础上，本实施例中的发送器13包括：V2X通信电路131、3G通信电路132和4G通信电路133。\n\n[0041]发送器13，还包括：选择电路134和信号检测电路135。其中，选择电路134、V2X通信电路131、所述3G通信电路132和所述4G通信电路133分别与所述信号检测电路135电连接；所述V2X通信电路131、所述3G通信电路132和所述4G通信电路133分别与所述选择电路134电连接。\n\n[0042]其中，信号检测电路135，用于检测所述V2X通信电路131、3G通信电路132和4G通信电路133的信号质量。\n\n[0043]选择电路134，用于从所述V2X通信电路131、3G通信电路132和4G通信电路133中选择信号质量最优的目标通信电路，利用所述目标通信电路对应的参数对空中接口进行参数配置。\n\n[0044]V2X通信电路131，用于利用参数配置后的空中接口，基于V2X通信方式向路侧设备发送所述控制命令原语。\n\n[0045]3G通信电路132，用于利用参数配置后的空中接口，基于3G通信方式向所述基站发送所述控制命令原语；\n\n[0046]4G通信电路133，用于利用参数配置后的空中接口，基于4G通信方式向所述基站发送所述控制命令原语。\n\n[0047]也就是说，V2X通信电路131基于V2X通信方式与路侧设备建立有通信连接。3G通信电路132基于4G通信方式与基站建立有通信连接。4G通信电路133基于4G通信方式与基站建立有通信连接。\n\n[0048]当发送器13从处理器12获得控制命令原语之后，信号检测电路135检测V2X通信电路131、3G通信电路132和4G通信电路133的信号质量。选择电路134从V2X通信电路131、3G通信电路132和4G通信电路133中选择信号质量最优的目标通信电路，利用目标通信电路对应的参数对空中接口进行参数配置。\n\n[0049]例如：若该目标通信电路为V2X通信电路，则V2X通信电路利用V2X参数配置后的空中接口，基于V2X通信方式向所述路侧设备发送所述控制命令原语。\n\n[0050]又例如：若该目标通信电路为3G通信电路，则3G通信电路利用3G参数配置后的空中接口，基于3G通信方式向所述基站发送所述控制命令原语。\n\n[0051]再例如：若该目标通信电路为4G通信电路，则4G通信电路利用4G参数配置后的空中接口，基于4G通信方式向所述基站发送所述控制命令原语。\n\n[0052]这是由于，V2X是一种近距离通信方式，容易出现信号较弱，甚至没有信号的情况出现，同时，4G网络的覆盖范围较小，也容易出现信号较弱，甚至没有信号的情况出现，而3G网络的传输速率较低，因此，通过从V2X通信电路、3G通信电路和4G通信电路中选择信号质量最优的进行向基站或路侧设备发送该控制命令原语，提高了发送该控制原语的效率。\n\n[0053]本实施例中，车载终端包括输入模块、发送器和处理器，用户通过车载终端的输入模块输入家居控制指令，进而处理器对家居控制指令进行识别和解析，获得控制命令原语，并由发送器通过空中接口，向基站或路侧设备发送该控制命令原语，以使所述基站或路侧设备向智能家居控制平台转发该控制命令原语，实现对智能家居平台所连接的智能家居设备的控制，解决了现有技术中对家居设备的控制方法不灵活，在用户忘记携带手机或遥控器，或者手机或遥控器恰好电量不足，则无法对这些家居设备进行控制的技术问题。同时，采用从V2X通信电路、3G通信电路和4G通信电路中选择信号质量最优的进行向基站或路侧设备发送该控制命令原语，提高了发送该控制原语的效率。\n\n[0054]实施例三\n\n[0055]图3为本发明实施例三提供的一种路侧设备的结构示意图，如图3所示，包括：接收器31、处理器32和发送器33。接收器31、发送器33分别与处理器32电连接。\n\n[0056]接收器31，基于V2X通信方式，接收车载终端发送的控制命令原语；\n\n[0057]处理器32，将所述控制命令原语封装为以太网报文；\n\n[0058]发送器33，通过以太网，向所述智能家居控制平台发送携带所述控制命令原语的以太网报文。\n\n[0059]具体的，一方面，路侧设备基于V2X通信方式与车载设备交互，另一方面，路侧设备基于以太网与智能家居控制平台交互。若路侧设备的接收器31接收车载终端发送的控制命令原语，则处理器32对该控制命令原语封装为以太网报文，以使发送器33通过以太网，向所述智能家居控制平台发送携带所述控制命令原语的以太网报文。\n\n[0060]本实施例中，通过路侧设备的接收器31接收车载终端发送的控制命令原语时，处理器32对该控制命令原语封装为以太网报文，以使发送器33通过以太网，向所述智能家居控制平台发送携带所述控制命令原语的以太网报文，解决了现有技术中对家居设备的控制方法不灵活，在用户忘记携带手机或遥控器，或者手机或遥控器恰好电量不足，则无法对这些家居设备进行控制的技术问题。\n\n[0061]实施例四\n\n[0062]图4为实施例四提供的一种智能家居系统的结构示意图，如图4所示，智能家居系统包括：前述实施例中的车载终端，以及前述实施例中的路侧设备，以及智能家居控制平台，以及家居设备。\n\n[0063]智能家居控制平台，用于通过以太网，接收所述车载终端通过所述路侧设备发送的控制命令原语，以及控制所述控制命令原语中的待操作的家居设备执行所述控制命令原语中的操作内容。\n\n[0064]家居设备，用于在所述智能家居控制平台的控制下，执行所述控制命令原语中的操作内容。\n\n[0065]具体的，车载终端在用户输入家居控制指令后，对所述家居控制指令进行识别和解析，获得控制命令原语，进而通过空中接口，向路侧设备发送该控制命令原语，以使路侧设备向智能家居控制平台转发所述控制命令原语。进而，路侧设备通过空中接口接收所述车载终端发送的控制命令原语，以及通过以太网，向所述智能家居控制平台转发所述控制命令原语。智能家居控制平台通过以太网，接收车载终端通过路侧设备发送的控制命令原语，以及控制所述控制命令原语中的待操作的家居设备执行所述控制命令原语中的操作内容。家居设备在所述智能家居控制平台的控制下，执行所述控制命令原语中的操作内容。\n\n[0066]本实施例中，通过路侧设备接收车载终端发送的控制命令原语，进而路侧设备，向智能家居控制平台发送携带控制命令原语的以太网报文，解决了现有技术中对家居设备的控制方法不灵活，在用户忘记携带手机或遥控器，或者手机或遥控器恰好电量不足，则无法对这些家居设备进行控制的技术问题。\n\n[0067]实施例五\n\n[0068]图5为实施例五提供的另一种智能家居系统的结构示意图，如图5所示，智能家居系统包括：前述实施例中的车载终端，以及基站，以及智能家居控制平台，以及家居设备。\n\n[0069]基站，用于通过空中接口接收所述车载终端发送的控制命令原语，以及通过以太网，向所述智能家居控制平台转发所述控制命令原语。\n\n[0070]智能家居控制平台，用于通过以太网，接收所述车载终端通过所述路侧设备发送的控制命令原语，以及控制所述控制命令原语中的待操作的家居设备执行所述控制命令原语中的操作内容。\n\n[0071]家居设备，用于在所述智能家居控制平台的控制下，执行所述控制命令原语中的操作内容。\n\n[0072]具体的，车载终端在用户输入家居控制指令后，对所述家居控制指令进行识别和解析，获得控制命令原语，进而通过空中接口，向基站发送该控制命令原语，以使所述基站向智能家居控制平台转发所述控制命令原语。进而，基站通过空中接口接收所述车载终端发送的控制命令原语，以及通过以太网，向所述智能家居控制平台转发所述控制命令原语。智能家居控制平台通过以太网，接收车载终端通过基站发送的控制命令原语，以及控制所述控制命令原语中的待操作的家居设备执行所述控制命令原语中的操作内容。家居设备在所述智能家居控制平台的控制下，执行所述控制命令原语中的操作内容。\n\n[0073]本实施例中，通过基站接收车载终端发送的控制命令原语，进而基站，向智能家居控制平台发送携带控制命令原语的以太网报文，解决了现有技术中对家居设备的控制方法不灵活，在用户忘记携带手机或遥控器，或者手机或遥控器恰好电量不足，则无法对这些家居设备进行控制的技术问题。\n\n[0074]本领域普通技术人员可以理解：实现上述各方法实施例的全部或部分步骤可以通过程序指令相关的硬件来完成。前述的程序可以存储于一计算机可读取存储介质中。该程序在执行时，执行包括上述各方法实施例的步骤；而前述的存储介质包括：ROM、RAM、磁碟或者光盘等各种可以存储程序代码的介质。\n\n[0075]最后应说明的是：以上各实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述各实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分或者全部技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。\n\n');
INSERT INTO `os_patent_instruction_text` VALUES (11132, 24070, '技术领域\n\n[0001]本发明涉及电子签批技术领域，具体而言，涉及一种电子签批验证方法及系统。\n\n背景技术\n\n[0002]对于公司内部签批流程，通常需要将待签批文件打印出来，然后给到各个签批人处进行签批签字盖章。这样的签批流程较为繁琐，工作效率低下。由此，电子签批应运而生。近年来，电子签批在企业流程、行业应用、移动支付和个人信息安全等各种场景中得到越来越多的应用。\n\n[0003]但现有的电子签批大多通过公共网络传输签批文件，缺乏对传输的签批文件的保护机制。对于企业来说，企业的财政开支状况、项目申请及研发文档等都是非常机密的材料，一些不法的竞争者经常通过技术手段窃取机密，甚至以签核人身份对签核文件进行签核操作，而其他签核人对这种行为无法识别，从而使用户遭受巨大的经济损失。\n\n发明内容\n\n[0004]本发明正是基于上述问题，提出了一种可以对电子签批的签核过程进行验证的电子签批验证方法及系统。\n\n[0005]有鉴于此，本发明一方面提出了一种电子签批验证方法，包括：\n\n[0006]响应发起人或下一顺序签核人的验证请求，根据其接收到的签核文件，生成对应的特征摘要，及获取当前签核人端生成的签核文件的特征摘要；\n\n[0007]根据所述发起人或所述下一顺序签核人对所述生成的特征摘要和所述存储的的特征摘要的比较结果，生成验证结果。\n\n[0008]进一步地，所述“响应发起人或下一顺序签核人的验证请求，根据其接收到的签核文件，生成对应的特征摘要”包括：\n\n[0009]获取及根据所述发起人设置的所述电子签批的至少一签核人的签核顺序，检测是否存在所述下一顺序签核人；\n\n[0010]当不存在所述下一顺序签核人时，响应所述发起人的验证请求，生成其接收到的签核文件对应的特征摘要和二维码，及响应所述发起人对所述二维码的扫描操作，获取及展示所述生成的特征摘要；\n\n[0011]当存在所述下一顺序签核人时，响应所述下一顺序签核人的验证请求，生成其接收到的签核文件对应的特征摘要和二维码，及响应所述下一顺序签核人对所述二维码的扫描操作，获取及展示所述生成的特征摘要。\n\n[0012]进一步地，所述“根据所述发起人或所述下一顺序签核人对所述生成的特征摘要和所述获取的特征摘要的比较结果，生成验证结果”包括：\n\n[0013]当所述比较结果为所述下一顺序签核人接收到的签核文件的特征摘要和所述获取的特征摘要匹配时，响应所述下一顺序签核人的签核请求；\n\n[0014]当所述比较结果为所述下一顺序签核人接收到的签核文件的特征摘要和所述获取的特征摘要不匹配时，响应所述下一顺序签核人的拒绝签核请求；\n\n[0015]当所述比较结果为所述发起人接收到的签核文件的特征摘要和所述获取的特征摘要不匹配时，响应所述发起人的重新签核请求。\n\n[0016]进一步地，所述“响应所述下一顺序签核人的签核请求”包括：\n\n[0017]获取所述下一顺序签核人对其接收到的签核文件的签核信息，循环执行所述电子签批验证方法。\n\n[0018]进一步地，所述“响应所述下一顺序签核人的拒绝签核请求”包括：\n\n[0019]获取所述下一顺序签核人输入的拒绝签核信息；\n\n[0020]发送所述拒绝签核信息和/或所述下一顺序签核人接收到的签核文件至所述当前签核人端，循环执行所述电子签批验证方法。\n\n[0021]进一步地，所述步骤“响应所述发起人的重新签核请求”包括：\n\n[0022]获取所述发起人输入的重新签核信息；\n\n[0023]发送所述重新签核信息和/或所述发起人接收到的签核文件至最后顺序签核人端，循环执行所述电子签批验证方法。\n\n[0024]本发明还提供了一种电子签批验证系统，包括生成单元、获取单元、服务器和处理器。\n\n[0025]所述生成单元，用于响应发起人或下一顺序签核人的验证请求，根据其接收到的签核文件，生成对应的特征摘要。\n\n[0026]所述获取单元，用于响应发起人或下一顺序签核人的验证请求，获取当前签核人端生成的签核文件的特征摘要。\n\n[0027]所述处理器，用于根据所述发起人或所述下一顺序签核人对所述生成的特征摘要和所述获取的特征摘要的比较结果，控制所述执行单元生成验证结果。\n\n[0028]进一步地，所述获取单元包括检测模块和获取模块。\n\n[0029]所述检测模块，用于获取及根据所述发起人设置的所述电子签批的至少一签核人的签核顺序，检测是否存在所述下一顺序签核人。\n\n[0030]所述生成单元，还用于响应所述发起人或所述或下一顺序签核人的验证请求，生成其接收到的签核文件对应的二维码。\n\n[0031]所述获取模块，用于响应所述发起人或所述或下一顺序签核人对所述二维码的扫描操作，获取及展示所述生成的特征摘要。\n\n[0032]进一步地，所述执行单元包括获取模块和反馈模块。所述获取模块，用于获取所述下一顺序签核人输入的拒绝签核信息，或对其接收到的签核文件的签核信息。所述反馈模块，用于发送所述拒绝签核信息和/或所述下一顺序签核人接收到的签核文件至所述当前签核人端。\n\n[0033]进一步地，所述执行单元包括获取模块和反馈模块。所述获取模块，用于获取所述发起人输入的重新签核信息。所述反馈模块，用于发送所述重新签核信息和/或所述发起人接收到的签核文件至最后顺序签核人端。\n\n[0034]本发明实施例提供的电子签批验证方法及系统，服务器端存储的当前签核人对签核文件的特征摘要可以帮助下一顺序签核人或发起人识别其接收到的签核文件上特征摘要的真伪，对电子签批的签核过程进行验证，从而保证电子签批的有效性，有效避免非法分子对签核文件的假冒签核，对用户造成不必要的损失。\n\n[0035]为使本发明的上述目的、特征和优点能更明显易懂，下文特举较佳实施例，并配合所附附图，作详细说明如下。\n\n附图说明\n\n[0036]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0037]图1示出了本发明实施例提供的一种电子签批验证方法的第一流程示意图；\n\n[0038]图2示出了本发明实施例提供的一种电子签批验证方法的第二流程示意图；\n\n[0039]图3示出了本发明实施例提供的一种电子签批验证系统的结构示意图。\n\n[0040]主要元件符号说明：\n\n[0041]100-电子签批验证系统；10-获取单元；11-检测模块；12-第一获取模块；20-生成单元；30-执行单元；31-第二获取模块；32-反馈模块；40-处理器；50-服务器。。\n\n具体实施方式\n\n[0042]为了便于理解本发明，下面将参照相关附图对电子签批验证方法及系统进行更清楚、完整地描述。附图中给出了电子签批验证方法及系统的优选实施例。电子签批验证方法及系统可以通过许多不同的形式来实现，并不限于本文所描述的实施例。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0043]实施例1\n\n[0044]图1示出了本发明实施例提供的一种电子签批验证方法的流程示意图。如图1所示，本发明实施例提供的电子签批验证方法，包括：\n\n[0045]步骤S10，响应发起人或下一顺序签核人的验证请求，根据其接收到的签核文件，生成对应的特征摘要，及获取当前签核人端生成的签核文件的特征摘要。\n\n[0046]具体地，在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。所述当前签核人可以为任一顺序签核人。所述当前签核人对来自发起人、上一顺序签核人或其他人通过移动网络或无线网络上传的签核文件进行签核。所述签核文件是指合同、请假条、样品申请、财务报销等需要至少一签核人签字的文件。\n\n[0047]需要说明的是，来自上一顺序签核人的签核文件包括所述上一顺序签核人和/或相对所述上一顺序签核人更靠前顺序签核人的签核信息，换句话说，来自所述签核顺序签核人的签核文件包括发起人设置的至少一签核人中部分签核人的签核信息。所述签核信息包括签核人姓名、签核时间、签核终端识别码或签核终端IP地址等。例如，一电子签批的签核顺序为研发部经理、物料部经理、财务部经理、董事长，假设当前签核人为财务部经理，则上一顺序签核人为物料部经理，下一顺序签核人为董事长。财务部经理接收到的签核文件包括物料部经理和/或研发部经理的特征摘要。发起人接收来自最后顺序签核人的签核文件，本举例中，发起人接收来自董事长的签核文件。\n\n[0048]进一步地，由于发起人接收到的签核文件并非一定是来自发起人设置的最后顺序签核人，下一顺序签核人接收到的签核文件也并非一定是来自发起人设置的当前顺序签核人，也有可能是来自任一第三方假冒签核的签核文件。例如，所述签核文件为一项财务报销，可以理解的是，通常，公司规定超过一定额度的财务报销必需由A级及其以上经理签核，如果所述第三方为了进行财务虚假报销，如增加非报销内容等，必须得到A级别及其以上经理的认可。此时，所述第三方可能以所述下一顺序签核人的身份对签核文件假冒签核并将假冒签核的签核文件发送至下一顺序签核人或发起人端。\n\n[0049]本实施例提供的电子签批验证方法，发起人及电子签批的任一签核人对其接收到的签核文件及其签核信息进行验证，从而对电子签批签核过程的每一环节进行验证，可以有效防止电子签批的签核信息的伪造或签核文件的篡改。\n\n[0050]具体地，响应发起人或下一顺序签核人的验证请求，获取服务器端存储的当前签核人端生成的签核文件的特征摘要。所述特征摘要根据当前签核人对其接收到的签核文件的签核信息生成。所述特征摘要包括所述签核文件的属性信息和签核信息等，所述属性信息包括所述电子签批主题、发起人或发起时间的文本、语音或图片等简略信息。需要说明的是，无论签核文件实际大小，对应的特征摘要的位数不超过预设上限，本实施例中，所述预设上限为128位。另外，发起人或任一签核人对签核文件的任何改变，如一标点符号的改变，该签核文件对应的特征摘要发生变化。由于任一签核人均需对其接收到的签核文件发生签核行为，因而发起人及任一签核人接收到的签核文件对应的特征摘要不同，从而特征摘要可以作为判断签核文件上签核信息真伪的识别信息。\n\n[0051]进一步地，获取发起人设置的所述电子签批的至少一签核人的签核顺序。根据发起人设置的该电子签批的至少一签核人的签核顺序，检测是否存在下一顺序签核人。当存在所述下一顺序签核人时，响应所述下一顺序签核人的验证请求，生成其接收到的签核文件对应的特征摘要和二维码，响应所述下一顺序签核人对所述二维码的扫描操作，获取及展示所述生成的特征摘要。当不存在所述下一顺序签核人时，表示发起人设置的至少一签核人均完成对签核文件的签核，换句话说，最后顺序签核人完成对签核文件签核，响应所述发起人的验证请求，生成其接收到的签核文件对应的特征摘要和二维码，及响应所述发起人对所述二维码的扫描操作，获取及展示所述生成的特征摘要。\n\n[0052]步骤S20，根据所述发起人或所述下一顺序签核人对所述生成的特征摘要和所述存储的的特征摘要的比较结果，生成验证结果。\n\n[0053]具体地，当所述比较结果为发起人接收到的签核文件的特征摘要和服务器端存储的特征摘要不匹配时，响应发起人的重新签核请求，获取发起人输入或选定的重新签核信息。所述匹配是指签核文件的属性信息、签核信息等均和所述获取的特征摘要一致。所述重新签核信息包括重新签核原因，如签核信息存在伪造风险等。反馈所述重新签核信息和/或发起人接收到的来自最后顺序签核人端的签核文件至最后顺序签核人端，从而最后顺序签核人对签核文件重新签核，确保电子签批的有效性。本实施例中，最后顺序签核人对签核文件重新签核信息自动覆盖原始签核信息。执行步骤S10，即循环执行所述电子签批验证方法。\n\n[0054]进一步地，当所述比较结果为发起人接收到的签核文件对应的特征摘要和所述获取的特征摘要匹配时，表示该电子签批完成签核及通过验证，所述电子签批验证方法结束。\n\n[0055]进一步地，当所述比较结果为所述下一顺序签核人接收到的签核文件的特征摘要和所述获取的特征摘要匹配时，表示下一顺序签核文件接收到的签核文件来自当前签核人，而非第三方，签核文件及其签核信息有效，可以对签核文件继续签核。响应下一顺序签核人的签核请求，获取下一顺序签核人对其接收到的签核文件的签核信息。执行步骤S10，即循环执行所述电子签批验证方法。\n\n[0056]进一步地，当所述比较结果为所述下一顺序签核人接收到的签核文件的特征摘要和所述获取的特征摘要不匹配时，表示下一顺序签核人接收到的签核文件或其签核信息存在伪造风险，需要反馈至当前签核人重新签核，从而确保电子签批的有效性。响应下一顺序签核人的拒绝签核请求，获取所述下一顺序签核人输入的拒绝签核信息。所述拒绝签核信息包括拒绝签核原因，如签核信息存在伪造风险等。反馈所述拒绝签核信息和/或所述下一顺序签核人接收到来自当前签核人的签核文件至当前签核人端，从而当前签核人对签核文件重新签核，确保电子签批的有效性。执行步骤S10，即循环执行所述电子签批验证方法。\n\n[0057]本发明实施例提供的电子签批验证方法，特征摘要用于帮助发起人及签核人对接收的签核文件及其签核信息均进行识别，不仅防止对签核信息的伪造，同时防止对签核文件内容的篡改，进一步保证了电子签批的有效性。\n\n[0058]实施例2\n\n[0059]图2示出了本发明实施例提供的一种电子签批验证方法的流程示意图。如图2所示，本发明实施例提供的电子签批验证方法，包括：\n\n[0060]步骤S1，获取及根据发起人设置的电子签批的至少一签核人的签核顺序，检测是否存在下一顺序签核人，当不存在所述下一顺序签核人时，执行步骤S21；当存在所述下一顺序签核人时，执行步骤S31。\n\n[0061]具体地，在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。根据发起人设置的该电子签批的至少一签核人的签核顺序，检测是否存在下一顺序签核人。\n\n[0062]步骤S21，当不存在所述下一顺序签核人时，响应所述发起人的验证请求，生成与其接收到的签核文件对应的特征摘要。\n\n[0063]具体地，当不存在所述下一顺序签核人时，表示发起人设置的至少一签核人均完成对签核文件的签核，换句话说，最后顺序签核人完成对签核文件签核。发起人接收来自最后顺序签核人的签核文件。响应所述发起人的验证请求，生成与其接收到的签核文件对应的特征摘要和二维码。响应发起人对所述二维码的扫描操作，获取及展示发起人接收到的签核文件对应的特征摘要。\n\n[0064]步骤S22，当不存在所述下一顺序签核人时，响应所述发起人的验证请求，获取及展示所述服务器端存储的最后顺序签核人端生成的签核文件的特征摘要。\n\n[0065]需要说明的是，步骤S22可以在步骤S21之前执行，也可以与步骤S21同时执行。\n\n[0066]具体地，发起人接收来自最后顺序签核人的签核文件。所述最后顺序签核人端生成的签核文件包括最后顺序签核人对签核文件的签核信息。服务器端存储的对应的特征摘要包括签核文件的属性信息和该签核信息。本实施例中，服务器端存储的特征摘要将作为发起人判断其接收到的签核文件及其签核信息真伪的参考标准。\n\n[0067]步骤S23，根据所述发起人对所述生成的特征摘要和所述获取的特征摘要的比较结果，响应所述发起人的重新签核请求。\n\n[0068]具体地，当所述比较结果为发起人接收到的签核文件对应的特征摘要和所述获取的特征摘要不匹配时，响应所述发起人的重新签核请求，获取发起人输入或选定的重新签核信息。反馈所述重新签核信息和/或发起人接收到的来自最后顺序签核人端的签核文件至最后顺序签核人端，从而最后顺序签核人对签核文件重新签核，确保电子签批的有效性。执行步骤S1，即循环执行所述电子签批验证方法。\n\n[0069]进一步地，当所述比较结果为发起人接收到的签核文件对应的特征摘要和所述获取的特征摘要匹配时，表示该电子签批完成签核及通过验证，所述电子签批验证方法结束。\n\n[0070]步骤S31，当存在所述下一顺序签核人时，响应所述下一顺序签核人的验证请求，生成其接收到的签核文件对应的特征摘要。\n\n[0071]具体地，当存在所述下一顺序签核人时，响应所述下一顺序签核人的验证请求，生成其接收到的签核文件对应的特征摘要和二维码，及响应所述下一顺序签核人对所述二维码的扫描操作，获取及展示所述生成的特征摘要，从而帮助下一顺序签核人对接收到的签核文件的特征摘要进行识别，确保电子签批的有效性。\n\n[0072]步骤S32，当存在所述下一顺序签核人时，响应所述下一顺序签核人的验证请求，获取及展示所述服务器端存储的当前签核人端生成的签核文件的特征摘要。\n\n[0073]需要说明的是，步骤S32可以在步骤S31之前执行，也可以与步骤S31同时执行。\n\n[0074]具体地，下一顺序签核人接收来自当前签核人的签核文件。所述当前签核人端生成的签核文件包括当前签核人对签核文件的签核信息。服务器端存储的对应的特征摘要包括签核文件的属性信息和该签核信息。本实施例中，服务器端存储的特征摘要将作为下一顺序签核人判断其接收到的签核文件及其签核信息真伪的参考标准。\n\n[0075]步骤S33，根据所述下一顺序签核人对所述生成的特征摘要和所述获取的特征摘要的比较结果，响应所述下一顺序签核人的签核请求或拒绝签核请求。\n\n[0076]具体地，当所述比较结果为所述下一顺序签核人接收到的签核文件的特征摘要和所述获取的特征摘要匹配时，表示下一顺序签核文件接收到的签核文件来自当前签核人，而非第三方，签核文件及其签核信息有效，可以对签核文件继续签核。响应下一顺序签核人的签核请求，获取下一顺序签核人对其接收到的签核文件的签核信息。执行步骤S1，即循环执行所述电子签批验证方法。\n\n[0077]进一步地，当所述比较结果为所述下一顺序签核人接收到的签核文件的特征摘要和所述获取的特征摘要不匹配时，表示下一顺序签核人接收到的签核文件或其签核信息存在伪造风险，需要反馈至当前签核人重新签核。响应下一顺序签核人的拒绝签核请求，获取所述下一顺序签核人输入的拒绝签核信息。所述拒绝签核信息包括拒绝签核原因，如特征摘要存在伪造风险等。反馈所述拒绝签核信息和/或所述下一顺序签核人接收到来自当前签核人的签核文件至当前签核人端，从而当前签核人对签核文件重新签核，确保电子签批的有效性。执行步骤S1，即循环执行所述电子签批验证方法。\n\n[0078]实施例3\n\n[0079]图3示出了本发明实施例提供的一种电子签批验证系统的结构示意图。如图3所示，本发明实施例提供的一种电子签批验证系统100，包括获取单元10、生成单元20、执行单元30、处理器40和服务器50。获取单元10、生成单元20和执行单元30均与处理器40电性连接。服务器50通过移动网络或无线网络等与处理器40通信连接。\n\n[0080]获取单元10用于响应发起人或下一顺序签核人的验证请求，获取服务器50端存储的当前签核人端生成的签核文件的特征摘要。本实施例中，获取单元10包括检测模块11和第一获取模块12。\n\n[0081]检测模块11用于获取及根据发起人设置的电子签批的至少一签核人的签核顺序，检测是否存在下一顺序签核人。\n\n[0082]具体地，在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。所述当前签核人可以为任一顺序签核人。处理器40响应发起人或下一顺序签核人对其接收到的签核文件的签核请求，获取及显示发起人、上一顺序签核人或其他人通过移动网络或无线网络上传的签核文件。所述签核文件是指合同、请假条、样品申请、财务报销等需要至少一签核人签字的文件。处理器40控制检测模块11根据发起人设置的该电子签批的至少一签核人的签核顺序，检测是否存在下一顺序签核人。\n\n[0083]第一获取模块12用于获取服务器50端存储的当前签核人端生成的签核文件的特征摘要。\n\n[0084]具体地，所述特征摘要根据当前签核人对其接收到的签核文件的签核信息生成。所述特征摘要包括所述签核文件的属性信息和签核信息等，所述属性信息包括所述电子签批主题、发起人或发起时间的文本、语音或图片等简略信息。当存在所述下一顺序签核人时，处理器40控制第一获取模块12响应下一顺序签核人的验证请求，获取服务器50端存储的当前签核人端生成的签核文件的特征摘要。当不存在所述下一顺序签核人时，表示发起人设置的至少一签核人均完成对签核文件的签核，换句话说，最后顺序签核人完成对签核文件签核，所述当前签核人为最后顺序签核人。处理器40控制第一获取模块12响应发起人的验证请求，获取服务器50端存储的最后顺序签核人端生成的签核文件的特征摘要。服务器50端存储的当前签核人对所述生成的特征摘要用于帮助下一顺序签核人或发起人识别其接收到的签核文件上特征摘要的真伪，从而保证电子签批的有效性。\n\n[0085]生成单元20用于响应发起人或下一顺序签核人的验证请求，生成其接收到的签核文件对应的特征摘要。\n\n[0086]本实施例中，生成单元20还用于响应发起人或下一顺序签核人的验证请求，生成其接收到的签核文件对应的二维码。\n\n[0087]具体地，当存在所述下一顺序签核人时，处理器40控制生成单元20响应所述下一顺序签核人的验证请求，生成其接收到的签核文件对应的特征摘要和二维码，及控制第一获取模块12响应所述下一顺序签核人对所述二维码的扫描操作，获取及展示所述生成的特征摘要。当不存在所述下一顺序签核人时，处理器40控制生成单元20响应发起人的验证请求，生成其接收到的签核文件对应的特征摘要和二维码，及控制第一获取模块12响应发起人对所述二维码的扫描操作，获取及展示所述生成的特征摘要。\n\n[0088]执行单元30用于生成验证结果，即响应下一顺序签核人的签核请求或拒绝签核请求，或响应发起人的重新签核请求。本实施例中，执行单元30包括第二获取模块31和反馈模块32。\n\n[0089]第二获取模块31用于获取下一顺序签核人或发起人输入的信息。\n\n[0090]具体地，处理器40根据发起人或下一顺序签核人对所述生成的特征摘要和服务器50端存储的特征摘要的比较结果，控制执行单元30响应下一顺序签核人的签核请求或拒绝签核请求，或响应发起人的重新签核请求。\n\n[0091]进一步地，当所述比较结果为发起人接收到的签核文件的特征摘要和服务器50端存储的特征摘要不匹配时，处理器40控制第二获取模块31响应发起人的重新签核请求，获取发起人输入或选定的重新签核信息。所述匹配是指签核文件的属性信息、签核信息等均和所述获取的特征摘要一致。所述重新签核信息包括重新签核原因，如特征摘要存在伪造风险等。\n\n[0092]进一步地，当所述比较结果为所述下一顺序签核人接收到的签核文件的特征摘要和服务器50端存储的特征摘要匹配时，表示下一顺序签核文件接收到的签核文件来自当前签核人，而非第三方，签核文件的特征摘要有效，可以对签核文件继续签核。处理器40控制第二获取模块31响应下一顺序签核人的签核请求，获取下一顺序签核人对其接收到的签核文件的签核信息。\n\n[0093]进一步地，当所述比较结果为所述下一顺序签核人接收到的签核文件的特征摘要和服务器50端存储的特征摘要不匹配时，表示下一顺序签核人接收到的签核文件或其签核信息存在伪造风险，需要反馈至当前签核人重新签核，从而确保电子签批的有效性。处理器40控制第二获取模块31响应下一顺序签核人的拒绝签核请求，获取所述下一顺序签核人输入的拒绝签核信息。所述拒绝签核信息包括拒绝签核原因，如特征摘要存在伪造风险等。\n\n[0094]反馈模块32用于反馈签核文件和/或其他信息至当前签核人。\n\n[0095]具体地，处理器40控制反馈模块32反馈所述重新签核信息至最后顺序签核人端，同时，控制反馈模块32发送发起人接收到的来自最后顺序签核人端的签核文件至最后顺序签核人端，从而最后顺序签核人对签核文件重新签核，确保电子签批的有效性。本实施例中，最后顺序签核人对签核文件重新签核信息自动覆盖原始签核信息。此时，处理器40控制获取单元10再次获取最后顺序签核人在所述反馈的签核文件上的签核信息，从而帮助发起人对其接收到的签核文件上的特征摘要重新确认。\n\n[0096]进一步地，处理器40控制反馈模块32反馈所述拒绝签核信息至当前签核人端，同时，控制反馈模块32发送下一顺序签核人接收到来自当前签核人的签核文件至当前签核人端，从而当前签核人对签核文件重新签核，确保电子签批的有效性。同理，处理器40控制获取单元10再次获取当前签核人在所述反馈的签核文件上的签核信息。\n\n[0097]本实施例提供的电子签批验证系统100，发起人及电子签批的任一签核人对其接收到的签核文件上的特征摘要进行验证，验证失败的签核文件直接反馈至上一顺序签核人端重新签核，从而实现对电子签批签核过程的每一环节进行验证，可以有效防止电子签批的特征摘要的伪造。\n\n[0098]本发明实施例提供的电子签批验证方法及系统，服务器端存储的当前签核人对签核文件的特征摘要可以帮助下一顺序签核人或发起人识别其接收到的签核文件上特征摘要的真伪，对电子签批的签核过程进行验证，从而保证电子签批的有效性，有效避免非法分子对签核文件的假冒签核，对用户造成不必要的损失。\n\n[0099]本发明实施例所提供的系统，其实现原理及产生的技术效果和前述方法实施例相同，为简要描述，系统实施例部分未提及之处，可参考前述方法实施例中相应内容。\n\n[0100]在这里示出和描述的所有示例中，任何具体值应被解释为仅仅是示例性的，而不是为限制，因此，示例性实施例的其他示例可以具有不同的值。应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。\n\n[0101]在本申请所提供的几个实施例中，应该理解到，所揭露的装置可以通过其它的方式实现。以上所描述的装置实施例仅仅是示意性的，例如，所述单元的划分，仅仅为一种逻辑功能划分，实际实现时可以有另外的划分方式，又例如，多个单元或组件可以结合或者可以集成到另一个系统，或一些特征可以忽略，或不执行。另一点，所显示或讨论的相互之间的耦合或直接耦合或通信连接可以是通过一些通信接口，装置或单元的间接耦合或通信连接，可以是电性，机械或其它的形式。\n\n[0102]所述为分离部件说明的单元可以是或者也可以不是物理上分开的，为单元显示的部件可以是或者也可以不是物理单元，即可以位于一个地方，或者也可以分布到多个网络单元上。可以根据实际的需要选择其中的部分或者全部单元来实现本实施例方案的目的。\n\n[0103]另外，在本发明各个实施例中的各功能单元可以集成在一个处理单元中，也可以是各个单元单独物理存在，也可以两个或两个以上单元集成在一个单元中。\n\n[0104]以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应所述以权利要求的保护范围为准。\n\n', '技术领域\n\n[0001]本发明涉及电子签批技术领域，具体而言，涉及一种电子签批验证方法及系统。\n\n背景技术\n\n[0002]对于公司内部签批流程，通常需要将待签批文件打印出来，然后给到各个签批人处进行签批签字盖章。这样的签批流程较为繁琐，工作效率低下。由此，电子签批应运而生。近年来，电子签批在企业流程、行业应用、移动支付和个人信息安全等各种场景中得到越来越多的应用。\n\n[0003]但现有的电子签批大多通过公共网络传输签批文件，缺乏对传输的签批文件的保护机制。对于企业来说，企业的财政开支状况、项目申请及研发文档等都是非常机密的材料，一些不法的竞争者经常通过技术手段窃取机密，甚至以签核人身份对签核文件进行签核操作，而其他签核人对这种行为无法识别，从而使用户遭受巨大的经济损失。\n\n发明内容\n\n[0004]本发明正是基于上述问题，提出了一种可以对电子签批的签核过程进行验证的电子签批验证方法及系统。\n\n[0005]有鉴于此，本发明一方面提出了一种电子签批验证方法，包括：\n\n[0006]响应发起人或下一顺序签核人的验证请求，根据其接收到的签核文件，生成对应的特征摘要，及获取当前签核人端生成的签核文件的特征摘要；\n\n[0007]根据所述发起人或所述下一顺序签核人对所述生成的特征摘要和所述存储的的特征摘要的比较结果，生成验证结果。\n\n[0008]进一步地，所述“响应发起人或下一顺序签核人的验证请求，根据其接收到的签核文件，生成对应的特征摘要”包括：\n\n[0009]获取及根据所述发起人设置的所述电子签批的至少一签核人的签核顺序，检测是否存在所述下一顺序签核人；\n\n[0010]当不存在所述下一顺序签核人时，响应所述发起人的验证请求，生成其接收到的签核文件对应的特征摘要和二维码，及响应所述发起人对所述二维码的扫描操作，获取及展示所述生成的特征摘要；\n\n[0011]当存在所述下一顺序签核人时，响应所述下一顺序签核人的验证请求，生成其接收到的签核文件对应的特征摘要和二维码，及响应所述下一顺序签核人对所述二维码的扫描操作，获取及展示所述生成的特征摘要。\n\n[0012]进一步地，所述“根据所述发起人或所述下一顺序签核人对所述生成的特征摘要和所述获取的特征摘要的比较结果，生成验证结果”包括：\n\n[0013]当所述比较结果为所述下一顺序签核人接收到的签核文件的特征摘要和所述获取的特征摘要匹配时，响应所述下一顺序签核人的签核请求；\n\n[0014]当所述比较结果为所述下一顺序签核人接收到的签核文件的特征摘要和所述获取的特征摘要不匹配时，响应所述下一顺序签核人的拒绝签核请求；\n\n[0015]当所述比较结果为所述发起人接收到的签核文件的特征摘要和所述获取的特征摘要不匹配时，响应所述发起人的重新签核请求。\n\n[0016]进一步地，所述“响应所述下一顺序签核人的签核请求”包括：\n\n[0017]获取所述下一顺序签核人对其接收到的签核文件的签核信息，循环执行所述电子签批验证方法。\n\n[0018]进一步地，所述“响应所述下一顺序签核人的拒绝签核请求”包括：\n\n[0019]获取所述下一顺序签核人输入的拒绝签核信息；\n\n[0020]发送所述拒绝签核信息和/或所述下一顺序签核人接收到的签核文件至所述当前签核人端，循环执行所述电子签批验证方法。\n\n[0021]进一步地，所述步骤“响应所述发起人的重新签核请求”包括：\n\n[0022]获取所述发起人输入的重新签核信息；\n\n[0023]发送所述重新签核信息和/或所述发起人接收到的签核文件至最后顺序签核人端，循环执行所述电子签批验证方法。\n\n[0024]本发明还提供了一种电子签批验证系统，包括生成单元、获取单元、服务器和处理器。\n\n[0025]所述生成单元，用于响应发起人或下一顺序签核人的验证请求，根据其接收到的签核文件，生成对应的特征摘要。\n\n[0026]所述获取单元，用于响应发起人或下一顺序签核人的验证请求，获取当前签核人端生成的签核文件的特征摘要。\n\n[0027]所述处理器，用于根据所述发起人或所述下一顺序签核人对所述生成的特征摘要和所述获取的特征摘要的比较结果，控制所述执行单元生成验证结果。\n\n[0028]进一步地，所述获取单元包括检测模块和获取模块。\n\n[0029]所述检测模块，用于获取及根据所述发起人设置的所述电子签批的至少一签核人的签核顺序，检测是否存在所述下一顺序签核人。\n\n[0030]所述生成单元，还用于响应所述发起人或所述或下一顺序签核人的验证请求，生成其接收到的签核文件对应的二维码。\n\n[0031]所述获取模块，用于响应所述发起人或所述或下一顺序签核人对所述二维码的扫描操作，获取及展示所述生成的特征摘要。\n\n[0032]进一步地，所述执行单元包括获取模块和反馈模块。所述获取模块，用于获取所述下一顺序签核人输入的拒绝签核信息，或对其接收到的签核文件的签核信息。所述反馈模块，用于发送所述拒绝签核信息和/或所述下一顺序签核人接收到的签核文件至所述当前签核人端。\n\n[0033]进一步地，所述执行单元包括获取模块和反馈模块。所述获取模块，用于获取所述发起人输入的重新签核信息。所述反馈模块，用于发送所述重新签核信息和/或所述发起人接收到的签核文件至最后顺序签核人端。\n\n[0034]本发明实施例提供的电子签批验证方法及系统，服务器端存储的当前签核人对签核文件的特征摘要可以帮助下一顺序签核人或发起人识别其接收到的签核文件上特征摘要的真伪，对电子签批的签核过程进行验证，从而保证电子签批的有效性，有效避免非法分子对签核文件的假冒签核，对用户造成不必要的损失。\n\n[0035]为使本发明的上述目的、特征和优点能更明显易懂，下文特举较佳实施例，并配合所附附图，作详细说明如下。\n\n附图说明\n\n[0036]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0037]图1示出了本发明实施例提供的一种电子签批验证方法的第一流程示意图；\n\n[0038]图2示出了本发明实施例提供的一种电子签批验证方法的第二流程示意图；\n\n[0039]图3示出了本发明实施例提供的一种电子签批验证系统的结构示意图。\n\n[0040]主要元件符号说明：\n\n[0041]100-电子签批验证系统；10-获取单元；11-检测模块；12-第一获取模块；20-生成单元；30-执行单元；31-第二获取模块；32-反馈模块；40-处理器；50-服务器。。\n\n具体实施方式\n\n[0042]为了便于理解本发明，下面将参照相关附图对电子签批验证方法及系统进行更清楚、完整地描述。附图中给出了电子签批验证方法及系统的优选实施例。电子签批验证方法及系统可以通过许多不同的形式来实现，并不限于本文所描述的实施例。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0043]实施例1\n\n[0044]图1示出了本发明实施例提供的一种电子签批验证方法的流程示意图。如图1所示，本发明实施例提供的电子签批验证方法，包括：\n\n[0045]步骤S10，响应发起人或下一顺序签核人的验证请求，根据其接收到的签核文件，生成对应的特征摘要，及获取当前签核人端生成的签核文件的特征摘要。\n\n[0046]具体地，在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。所述当前签核人可以为任一顺序签核人。所述当前签核人对来自发起人、上一顺序签核人或其他人通过移动网络或无线网络上传的签核文件进行签核。所述签核文件是指合同、请假条、样品申请、财务报销等需要至少一签核人签字的文件。\n\n[0047]需要说明的是，来自上一顺序签核人的签核文件包括所述上一顺序签核人和/或相对所述上一顺序签核人更靠前顺序签核人的签核信息，换句话说，来自所述签核顺序签核人的签核文件包括发起人设置的至少一签核人中部分签核人的签核信息。所述签核信息包括签核人姓名、签核时间、签核终端识别码或签核终端IP地址等。例如，一电子签批的签核顺序为研发部经理、物料部经理、财务部经理、董事长，假设当前签核人为财务部经理，则上一顺序签核人为物料部经理，下一顺序签核人为董事长。财务部经理接收到的签核文件包括物料部经理和/或研发部经理的特征摘要。发起人接收来自最后顺序签核人的签核文件，本举例中，发起人接收来自董事长的签核文件。\n\n[0048]进一步地，由于发起人接收到的签核文件并非一定是来自发起人设置的最后顺序签核人，下一顺序签核人接收到的签核文件也并非一定是来自发起人设置的当前顺序签核人，也有可能是来自任一第三方假冒签核的签核文件。例如，所述签核文件为一项财务报销，可以理解的是，通常，公司规定超过一定额度的财务报销必需由A级及其以上经理签核，如果所述第三方为了进行财务虚假报销，如增加非报销内容等，必须得到A级别及其以上经理的认可。此时，所述第三方可能以所述下一顺序签核人的身份对签核文件假冒签核并将假冒签核的签核文件发送至下一顺序签核人或发起人端。\n\n[0049]本实施例提供的电子签批验证方法，发起人及电子签批的任一签核人对其接收到的签核文件及其签核信息进行验证，从而对电子签批签核过程的每一环节进行验证，可以有效防止电子签批的签核信息的伪造或签核文件的篡改。\n\n[0050]具体地，响应发起人或下一顺序签核人的验证请求，获取服务器端存储的当前签核人端生成的签核文件的特征摘要。所述特征摘要根据当前签核人对其接收到的签核文件的签核信息生成。所述特征摘要包括所述签核文件的属性信息和签核信息等，所述属性信息包括所述电子签批主题、发起人或发起时间的文本、语音或图片等简略信息。需要说明的是，无论签核文件实际大小，对应的特征摘要的位数不超过预设上限，本实施例中，所述预设上限为128位。另外，发起人或任一签核人对签核文件的任何改变，如一标点符号的改变，该签核文件对应的特征摘要发生变化。由于任一签核人均需对其接收到的签核文件发生签核行为，因而发起人及任一签核人接收到的签核文件对应的特征摘要不同，从而特征摘要可以作为判断签核文件上签核信息真伪的识别信息。\n\n[0051]进一步地，获取发起人设置的所述电子签批的至少一签核人的签核顺序。根据发起人设置的该电子签批的至少一签核人的签核顺序，检测是否存在下一顺序签核人。当存在所述下一顺序签核人时，响应所述下一顺序签核人的验证请求，生成其接收到的签核文件对应的特征摘要和二维码，响应所述下一顺序签核人对所述二维码的扫描操作，获取及展示所述生成的特征摘要。当不存在所述下一顺序签核人时，表示发起人设置的至少一签核人均完成对签核文件的签核，换句话说，最后顺序签核人完成对签核文件签核，响应所述发起人的验证请求，生成其接收到的签核文件对应的特征摘要和二维码，及响应所述发起人对所述二维码的扫描操作，获取及展示所述生成的特征摘要。\n\n[0052]步骤S20，根据所述发起人或所述下一顺序签核人对所述生成的特征摘要和所述存储的的特征摘要的比较结果，生成验证结果。\n\n[0053]具体地，当所述比较结果为发起人接收到的签核文件的特征摘要和服务器端存储的特征摘要不匹配时，响应发起人的重新签核请求，获取发起人输入或选定的重新签核信息。所述匹配是指签核文件的属性信息、签核信息等均和所述获取的特征摘要一致。所述重新签核信息包括重新签核原因，如签核信息存在伪造风险等。反馈所述重新签核信息和/或发起人接收到的来自最后顺序签核人端的签核文件至最后顺序签核人端，从而最后顺序签核人对签核文件重新签核，确保电子签批的有效性。本实施例中，最后顺序签核人对签核文件重新签核信息自动覆盖原始签核信息。执行步骤S10，即循环执行所述电子签批验证方法。\n\n[0054]进一步地，当所述比较结果为发起人接收到的签核文件对应的特征摘要和所述获取的特征摘要匹配时，表示该电子签批完成签核及通过验证，所述电子签批验证方法结束。\n\n[0055]进一步地，当所述比较结果为所述下一顺序签核人接收到的签核文件的特征摘要和所述获取的特征摘要匹配时，表示下一顺序签核文件接收到的签核文件来自当前签核人，而非第三方，签核文件及其签核信息有效，可以对签核文件继续签核。响应下一顺序签核人的签核请求，获取下一顺序签核人对其接收到的签核文件的签核信息。执行步骤S10，即循环执行所述电子签批验证方法。\n\n[0056]进一步地，当所述比较结果为所述下一顺序签核人接收到的签核文件的特征摘要和所述获取的特征摘要不匹配时，表示下一顺序签核人接收到的签核文件或其签核信息存在伪造风险，需要反馈至当前签核人重新签核，从而确保电子签批的有效性。响应下一顺序签核人的拒绝签核请求，获取所述下一顺序签核人输入的拒绝签核信息。所述拒绝签核信息包括拒绝签核原因，如签核信息存在伪造风险等。反馈所述拒绝签核信息和/或所述下一顺序签核人接收到来自当前签核人的签核文件至当前签核人端，从而当前签核人对签核文件重新签核，确保电子签批的有效性。执行步骤S10，即循环执行所述电子签批验证方法。\n\n[0057]本发明实施例提供的电子签批验证方法，特征摘要用于帮助发起人及签核人对接收的签核文件及其签核信息均进行识别，不仅防止对签核信息的伪造，同时防止对签核文件内容的篡改，进一步保证了电子签批的有效性。\n\n[0058]实施例2\n\n[0059]图2示出了本发明实施例提供的一种电子签批验证方法的流程示意图。如图2所示，本发明实施例提供的电子签批验证方法，包括：\n\n[0060]步骤S1，获取及根据发起人设置的电子签批的至少一签核人的签核顺序，检测是否存在下一顺序签核人，当不存在所述下一顺序签核人时，执行步骤S21；当存在所述下一顺序签核人时，执行步骤S31。\n\n[0061]具体地，在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。根据发起人设置的该电子签批的至少一签核人的签核顺序，检测是否存在下一顺序签核人。\n\n[0062]步骤S21，当不存在所述下一顺序签核人时，响应所述发起人的验证请求，生成与其接收到的签核文件对应的特征摘要。\n\n[0063]具体地，当不存在所述下一顺序签核人时，表示发起人设置的至少一签核人均完成对签核文件的签核，换句话说，最后顺序签核人完成对签核文件签核。发起人接收来自最后顺序签核人的签核文件。响应所述发起人的验证请求，生成与其接收到的签核文件对应的特征摘要和二维码。响应发起人对所述二维码的扫描操作，获取及展示发起人接收到的签核文件对应的特征摘要。\n\n[0064]步骤S22，当不存在所述下一顺序签核人时，响应所述发起人的验证请求，获取及展示所述服务器端存储的最后顺序签核人端生成的签核文件的特征摘要。\n\n[0065]需要说明的是，步骤S22可以在步骤S21之前执行，也可以与步骤S21同时执行。\n\n[0066]具体地，发起人接收来自最后顺序签核人的签核文件。所述最后顺序签核人端生成的签核文件包括最后顺序签核人对签核文件的签核信息。服务器端存储的对应的特征摘要包括签核文件的属性信息和该签核信息。本实施例中，服务器端存储的特征摘要将作为发起人判断其接收到的签核文件及其签核信息真伪的参考标准。\n\n[0067]步骤S23，根据所述发起人对所述生成的特征摘要和所述获取的特征摘要的比较结果，响应所述发起人的重新签核请求。\n\n[0068]具体地，当所述比较结果为发起人接收到的签核文件对应的特征摘要和所述获取的特征摘要不匹配时，响应所述发起人的重新签核请求，获取发起人输入或选定的重新签核信息。反馈所述重新签核信息和/或发起人接收到的来自最后顺序签核人端的签核文件至最后顺序签核人端，从而最后顺序签核人对签核文件重新签核，确保电子签批的有效性。执行步骤S1，即循环执行所述电子签批验证方法。\n\n[0069]进一步地，当所述比较结果为发起人接收到的签核文件对应的特征摘要和所述获取的特征摘要匹配时，表示该电子签批完成签核及通过验证，所述电子签批验证方法结束。\n\n[0070]步骤S31，当存在所述下一顺序签核人时，响应所述下一顺序签核人的验证请求，生成其接收到的签核文件对应的特征摘要。\n\n[0071]具体地，当存在所述下一顺序签核人时，响应所述下一顺序签核人的验证请求，生成其接收到的签核文件对应的特征摘要和二维码，及响应所述下一顺序签核人对所述二维码的扫描操作，获取及展示所述生成的特征摘要，从而帮助下一顺序签核人对接收到的签核文件的特征摘要进行识别，确保电子签批的有效性。\n\n[0072]步骤S32，当存在所述下一顺序签核人时，响应所述下一顺序签核人的验证请求，获取及展示所述服务器端存储的当前签核人端生成的签核文件的特征摘要。\n\n[0073]需要说明的是，步骤S32可以在步骤S31之前执行，也可以与步骤S31同时执行。\n\n[0074]具体地，下一顺序签核人接收来自当前签核人的签核文件。所述当前签核人端生成的签核文件包括当前签核人对签核文件的签核信息。服务器端存储的对应的特征摘要包括签核文件的属性信息和该签核信息。本实施例中，服务器端存储的特征摘要将作为下一顺序签核人判断其接收到的签核文件及其签核信息真伪的参考标准。\n\n[0075]步骤S33，根据所述下一顺序签核人对所述生成的特征摘要和所述获取的特征摘要的比较结果，响应所述下一顺序签核人的签核请求或拒绝签核请求。\n\n[0076]具体地，当所述比较结果为所述下一顺序签核人接收到的签核文件的特征摘要和所述获取的特征摘要匹配时，表示下一顺序签核文件接收到的签核文件来自当前签核人，而非第三方，签核文件及其签核信息有效，可以对签核文件继续签核。响应下一顺序签核人的签核请求，获取下一顺序签核人对其接收到的签核文件的签核信息。执行步骤S1，即循环执行所述电子签批验证方法。\n\n[0077]进一步地，当所述比较结果为所述下一顺序签核人接收到的签核文件的特征摘要和所述获取的特征摘要不匹配时，表示下一顺序签核人接收到的签核文件或其签核信息存在伪造风险，需要反馈至当前签核人重新签核。响应下一顺序签核人的拒绝签核请求，获取所述下一顺序签核人输入的拒绝签核信息。所述拒绝签核信息包括拒绝签核原因，如特征摘要存在伪造风险等。反馈所述拒绝签核信息和/或所述下一顺序签核人接收到来自当前签核人的签核文件至当前签核人端，从而当前签核人对签核文件重新签核，确保电子签批的有效性。执行步骤S1，即循环执行所述电子签批验证方法。\n\n[0078]实施例3\n\n[0079]图3示出了本发明实施例提供的一种电子签批验证系统的结构示意图。如图3所示，本发明实施例提供的一种电子签批验证系统100，包括获取单元10、生成单元20、执行单元30、处理器40和服务器50。获取单元10、生成单元20和执行单元30均与处理器40电性连接。服务器50通过移动网络或无线网络等与处理器40通信连接。\n\n[0080]获取单元10用于响应发起人或下一顺序签核人的验证请求，获取服务器50端存储的当前签核人端生成的签核文件的特征摘要。本实施例中，获取单元10包括检测模块11和第一获取模块12。\n\n[0081]检测模块11用于获取及根据发起人设置的电子签批的至少一签核人的签核顺序，检测是否存在下一顺序签核人。\n\n[0082]具体地，在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。所述当前签核人可以为任一顺序签核人。处理器40响应发起人或下一顺序签核人对其接收到的签核文件的签核请求，获取及显示发起人、上一顺序签核人或其他人通过移动网络或无线网络上传的签核文件。所述签核文件是指合同、请假条、样品申请、财务报销等需要至少一签核人签字的文件。处理器40控制检测模块11根据发起人设置的该电子签批的至少一签核人的签核顺序，检测是否存在下一顺序签核人。\n\n[0083]第一获取模块12用于获取服务器50端存储的当前签核人端生成的签核文件的特征摘要。\n\n[0084]具体地，所述特征摘要根据当前签核人对其接收到的签核文件的签核信息生成。所述特征摘要包括所述签核文件的属性信息和签核信息等，所述属性信息包括所述电子签批主题、发起人或发起时间的文本、语音或图片等简略信息。当存在所述下一顺序签核人时，处理器40控制第一获取模块12响应下一顺序签核人的验证请求，获取服务器50端存储的当前签核人端生成的签核文件的特征摘要。当不存在所述下一顺序签核人时，表示发起人设置的至少一签核人均完成对签核文件的签核，换句话说，最后顺序签核人完成对签核文件签核，所述当前签核人为最后顺序签核人。处理器40控制第一获取模块12响应发起人的验证请求，获取服务器50端存储的最后顺序签核人端生成的签核文件的特征摘要。服务器50端存储的当前签核人对所述生成的特征摘要用于帮助下一顺序签核人或发起人识别其接收到的签核文件上特征摘要的真伪，从而保证电子签批的有效性。\n\n[0085]生成单元20用于响应发起人或下一顺序签核人的验证请求，生成其接收到的签核文件对应的特征摘要。\n\n[0086]本实施例中，生成单元20还用于响应发起人或下一顺序签核人的验证请求，生成其接收到的签核文件对应的二维码。\n\n[0087]具体地，当存在所述下一顺序签核人时，处理器40控制生成单元20响应所述下一顺序签核人的验证请求，生成其接收到的签核文件对应的特征摘要和二维码，及控制第一获取模块12响应所述下一顺序签核人对所述二维码的扫描操作，获取及展示所述生成的特征摘要。当不存在所述下一顺序签核人时，处理器40控制生成单元20响应发起人的验证请求，生成其接收到的签核文件对应的特征摘要和二维码，及控制第一获取模块12响应发起人对所述二维码的扫描操作，获取及展示所述生成的特征摘要。\n\n[0088]执行单元30用于生成验证结果，即响应下一顺序签核人的签核请求或拒绝签核请求，或响应发起人的重新签核请求。本实施例中，执行单元30包括第二获取模块31和反馈模块32。\n\n[0089]第二获取模块31用于获取下一顺序签核人或发起人输入的信息。\n\n[0090]具体地，处理器40根据发起人或下一顺序签核人对所述生成的特征摘要和服务器50端存储的特征摘要的比较结果，控制执行单元30响应下一顺序签核人的签核请求或拒绝签核请求，或响应发起人的重新签核请求。\n\n[0091]进一步地，当所述比较结果为发起人接收到的签核文件的特征摘要和服务器50端存储的特征摘要不匹配时，处理器40控制第二获取模块31响应发起人的重新签核请求，获取发起人输入或选定的重新签核信息。所述匹配是指签核文件的属性信息、签核信息等均和所述获取的特征摘要一致。所述重新签核信息包括重新签核原因，如特征摘要存在伪造风险等。\n\n[0092]进一步地，当所述比较结果为所述下一顺序签核人接收到的签核文件的特征摘要和服务器50端存储的特征摘要匹配时，表示下一顺序签核文件接收到的签核文件来自当前签核人，而非第三方，签核文件的特征摘要有效，可以对签核文件继续签核。处理器40控制第二获取模块31响应下一顺序签核人的签核请求，获取下一顺序签核人对其接收到的签核文件的签核信息。\n\n[0093]进一步地，当所述比较结果为所述下一顺序签核人接收到的签核文件的特征摘要和服务器50端存储的特征摘要不匹配时，表示下一顺序签核人接收到的签核文件或其签核信息存在伪造风险，需要反馈至当前签核人重新签核，从而确保电子签批的有效性。处理器40控制第二获取模块31响应下一顺序签核人的拒绝签核请求，获取所述下一顺序签核人输入的拒绝签核信息。所述拒绝签核信息包括拒绝签核原因，如特征摘要存在伪造风险等。\n\n[0094]反馈模块32用于反馈签核文件和/或其他信息至当前签核人。\n\n[0095]具体地，处理器40控制反馈模块32反馈所述重新签核信息至最后顺序签核人端，同时，控制反馈模块32发送发起人接收到的来自最后顺序签核人端的签核文件至最后顺序签核人端，从而最后顺序签核人对签核文件重新签核，确保电子签批的有效性。本实施例中，最后顺序签核人对签核文件重新签核信息自动覆盖原始签核信息。此时，处理器40控制获取单元10再次获取最后顺序签核人在所述反馈的签核文件上的签核信息，从而帮助发起人对其接收到的签核文件上的特征摘要重新确认。\n\n[0096]进一步地，处理器40控制反馈模块32反馈所述拒绝签核信息至当前签核人端，同时，控制反馈模块32发送下一顺序签核人接收到来自当前签核人的签核文件至当前签核人端，从而当前签核人对签核文件重新签核，确保电子签批的有效性。同理，处理器40控制获取单元10再次获取当前签核人在所述反馈的签核文件上的签核信息。\n\n[0097]本实施例提供的电子签批验证系统100，发起人及电子签批的任一签核人对其接收到的签核文件上的特征摘要进行验证，验证失败的签核文件直接反馈至上一顺序签核人端重新签核，从而实现对电子签批签核过程的每一环节进行验证，可以有效防止电子签批的特征摘要的伪造。\n\n[0098]本发明实施例提供的电子签批验证方法及系统，服务器端存储的当前签核人对签核文件的特征摘要可以帮助下一顺序签核人或发起人识别其接收到的签核文件上特征摘要的真伪，对电子签批的签核过程进行验证，从而保证电子签批的有效性，有效避免非法分子对签核文件的假冒签核，对用户造成不必要的损失。\n\n[0099]本发明实施例所提供的系统，其实现原理及产生的技术效果和前述方法实施例相同，为简要描述，系统实施例部分未提及之处，可参考前述方法实施例中相应内容。\n\n[0100]在这里示出和描述的所有示例中，任何具体值应被解释为仅仅是示例性的，而不是为限制，因此，示例性实施例的其他示例可以具有不同的值。应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。\n\n[0101]在本申请所提供的几个实施例中，应该理解到，所揭露的装置可以通过其它的方式实现。以上所描述的装置实施例仅仅是示意性的，例如，所述单元的划分，仅仅为一种逻辑功能划分，实际实现时可以有另外的划分方式，又例如，多个单元或组件可以结合或者可以集成到另一个系统，或一些特征可以忽略，或不执行。另一点，所显示或讨论的相互之间的耦合或直接耦合或通信连接可以是通过一些通信接口，装置或单元的间接耦合或通信连接，可以是电性，机械或其它的形式。\n\n[0102]所述为分离部件说明的单元可以是或者也可以不是物理上分开的，为单元显示的部件可以是或者也可以不是物理单元，即可以位于一个地方，或者也可以分布到多个网络单元上。可以根据实际的需要选择其中的部分或者全部单元来实现本实施例方案的目的。\n\n[0103]另外，在本发明各个实施例中的各功能单元可以集成在一个处理单元中，也可以是各个单元单独物理存在，也可以两个或两个以上单元集成在一个单元中。\n\n[0104]以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应所述以权利要求的保护范围为准。\n\n');
INSERT INTO `os_patent_instruction_text` VALUES (11133, 24071, '技术领域\n\n[0001]本发明涉及电子签批技术领域，具体而言，涉及一种电子签批验证方法及系统。\n\n背景技术\n\n[0002]对于公司内部签批流程，通常需要将待签批文件打印出来，然后给到各个签批人处进行签批签字盖章。这样的签批流程较为繁琐，工作效率低下。由此，电子签批应运而生。近年来，电子签批在企业流程、行业应用、移动支付和个人信息安全等各种场景中得到越来越多的应用。\n\n[0003]但现有的电子签批大多通过公共网络传输签批文件，缺乏对传输的签批文件的保护机制。对于企业来说，企业的财政开支状况、项目申请及研发文档等都是非常机密的材料，一些不法的竞争者经常通过技术手段窃取机密，甚至以签核人身份对签核文件进行签核操作，而其他签核人对这种行为无法识别，从而使用户遭受巨大的经济损失。\n\n发明内容\n\n[0004]本发明正是基于上述问题，提出了一种可以对电子签批的签核过程进行验证的电子签批验证方法及系统。\n\n[0005]有鉴于此，本发明一方面提出了一种电子签批验证方法，包括：\n\n[0006]获取当前签核人对其接收到的签核文件的签核信息，生成对应的验证码；\n\n[0007]响应发起人或下一顺序签核人对所述验证码的验证操作，获取该验证码对应的签核信息；\n\n[0008]根据所述发起人或所述下一顺序签核人对其接收到的签核文件的签核信息和所述验证码对应的签核信息的比较结果，生成验证结果。\n\n[0009]进一步地，所述“响应发起人或下一顺序签核人对所述验证码的验证操作，获取服务器端存储的该验证码对应的签核信息”包括：\n\n[0010]获取及根据所述发起人设置的所述电子签批的至少一签核人的签核顺序，检测是否存在所述下一顺序签核人；\n\n[0011]当不存在所述下一顺序签核人时，响应所述发起人对所述验证码的验证操作，获取服务器端存储的该验证码对应的签核信息；\n\n[0012]当存在所述下一顺序签核人时，响应所述下一顺序签核人对所述验证码的验证操作，获取所述服务器端存储的该验证码对应的签核信息。\n\n[0013]进一步地，所述“根据所述发起人或所述下一顺序签核人对其接收到的签核文件的签核信息和所述验证码对应的签核信息的比较结果，生成验证结果”包括：\n\n[0014]当所述比较结果为所述下一顺序签核人接收到的签核文件的签核信息和所述验证码对应的签核信息匹配时，响应所述下一顺序签核人的签核请求；\n\n[0015]当所述比较结果为所述下一顺序签核人接收到的签核文件的签核信息和所述验证码对应的签核信息不匹配时，响应所述下一顺序签核人的拒绝签核请求；\n\n[0016]当所述比较结果为所述发起人接收到的签核文件的签核信息和所述验证码对应的签核信息不匹配时，响应所述发起人的重新签核请求。\n\n[0017]进一步地，所述“响应所述下一顺序签核人的签核请求”包括：\n\n[0018]获取所述下一顺序签核人对其接收到的签核文件的签核信息，循环执行所述电子签批验证方法。\n\n[0019]进一步地，所述“响应所述下一顺序签核人的拒绝签核请求”包括：\n\n[0020]获取所述下一顺序签核人输入的拒绝签核信息；\n\n[0021]发送所述拒绝签核信息和/或所述下一顺序签核人接收到的签核文件至所述当前签核人端，循环执行所述电子签批验证方法。\n\n[0022]进一步地，所述“响应所述发起人的重新签核请求”包括：\n\n[0023]获取所述发起人输入的重新签核信息；\n\n[0024]发送所述重新签核信息和/或所述发起人接收到的签核文件至最后顺序签核人端，循环执行所述电子签批验证方法。\n\n[0025]本发明另一方面提供了一种电子签批验证系统，包括生成单元、获取单元、服务器、执行单元和处理器。\n\n[0026]所述生成单元，用于获取当前签核人对其接收到的签核文件的签核信息，生成对应的验证码。\n\n[0027]所述获取单元，用于响应发起人或下一顺序签核人对所述验证码的验证操作，获取该验证码对应的签核信息。\n\n[0028]所述处理器，用于根据所述发起人或所述下一顺序签核人对其接收到的签核文件的签核信息和所述验证码对应的签核信息的比较结果，控制所述执行单元生成验证结果。\n\n[0029]进一步地，所述获取单元包括检测模块和获取模块。\n\n[0030]所述检测模块，用于获取及根据所述发起人设置的所述电子签批的至少一签核人的签核顺序，检测是否存在所述下一顺序签核人。\n\n[0031]所述处理器，还用于当不存在所述下一顺序签核人时，控制所述获取模块响应所述发起人对该验证码的验证操作，获取服务器端存储的该验证码对应的签核信息；当存在所述下一顺序签核人时，控制所述获取模块响应所述下一顺序签核人对该验证码的验证操作，获取所述服务器端存储的该验证码对应的签核信息。\n\n[0032]进一步地，所述执行单元包括获取模块和反馈模块。所述获取模块，用于获取所述下一顺序签核人输入的拒绝签核信息，或对其接收到的签核文件的签核信息。所述反馈模块，用于发送所述拒绝签核信息和/或所述下一顺序签核人接收到的签核文件至所述当前签核人端。\n\n[0033]进一步地，所述执行单元包括获取模块和反馈模块。所述获取模块，用于获取所述发起人输入的重新签核信息。所述反馈模块，用于发送所述重新签核信息和/或所述发起人接收到的签核文件至最后顺序签核人端。\n\n[0034]本发明实施例提供的电子签批验证方法及系统，根据签核人对签核文件的签核信息，自动生成对应的验证码，该验证码可以帮助下一顺序签核人或发起人识别其接收到的签核文件上签核信息的真伪，对电子签批的签核过程进行验证，从而保证电子签批的有效性，有效避免非法分子对签核文件的假冒签核，对用户造成不必要的损失。\n\n[0035]为使本发明的上述目的、特征和优点能更明显易懂，下文特举较佳实施例，并配合所附附图，作详细说明如下。\n\n附图说明\n\n[0036]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0037]图1示出了本发明实施例提供的一种电子签批验证方法的第一流程示意图；\n\n[0038]图2示出了本发明实施例提供的一种电子签批验证方法的第二流程示意图；\n\n[0039]图3示出了本发明实施例提供的一种电子签批验证系统的结构示意图。\n\n[0040]主要元件符号说明：\n\n[0041]100-电子签批验证系统；10-生成单元；20-获取单元；21-检测模块；22-第一获取模块；30-执行单元；31-第二获取模块；32-反馈模块；40-处理器；50-服务器。\n\n具体实施方式\n\n[0042]为了便于理解本发明，下面将参照相关附图对电子签批验证方法及系统进行更清楚、完整地描述。附图中给出了电子签批验证方法及系统的优选实施例。电子签批验证方法及系统可以通过许多不同的形式来实现，并不限于本文所描述的实施例。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0043]实施例1\n\n[0044]图1示出了本发明实施例提供的一种电子签批验证方法的流程示意图。如图1所示，本发明实施例提供的电子签批验证方法，包括：\n\n[0045]步骤S10，获取当前签核人对其接收到的签核文件的签核信息，生成对应的验证码。\n\n[0046]具体地，在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。所述当前签核人可以为任一顺序签核人。响应所述当前签核人对其接收到的签核文件的签核请求，获取及显示发起人、上一顺序签核人或其他人通过移动网络或无线网络上传的签核文件。所述签核文件是指合同、请假条、样品申请、财务报销等需要至少一签核人签字的文件。\n\n[0047]需要说明的是，来自上一顺序签核人的签核文件包括所述上一顺序签核人和/或相对所述上一顺序签核人更靠前顺序签核人的签核信息，换句话说，来自所述签核顺序签核人的签核文件包括发起人设置的至少一签核人中部分签核人的签核信息。例如，一电子签批的签核顺序为研发部经理、物料部经理、财务部经理、董事长，假设当前签核人为财务部经理，则上一顺序签核人为物料部经理，下一顺序签核人为董事长。财务部经理接收到的签核文件包括物料部经理和/或研发部经理的签核信息。发起人接收来自最后顺序签核人的签核文件，本举例中，发起人接收来自董事长的签核文件。\n\n[0048]进一步地，获取所述当前签核人在其接收到的签核文件上输入的签核信息，生成与所述签核信息对应的验证码。所述签核信息包括签核人姓名、签核时间、签核终端识别码或签核终端IP地址等。所述验证码可以是二维码、条形码等。\n\n[0049]步骤S20，响应发起人或下一顺序签核人对所述验证码的验证操作，获取该验证码对应的签核信息。\n\n[0050]具体地，所述验证码用于帮助下一顺序签核人或发起人识别其接收到的签核文件上签核信息的真伪，从而保证电子签批的有效性。由于发起人接收到的签核文件并非一定是来自发起人设置的最后顺序签核人，下一顺序签核人接收到的签核文件也并非一定是来自发起人设置的当前顺序签核人，也有可能是来自任一第三方假冒签核的签核文件。例如，所述签核文件为一项财务报销，可以理解的是，通常，公司规定超过一定额度的财务报销必需由A级及其以上经理签核，如果所述第三方为了进行财务虚假报销，如增加非报销内容等，必须得到A级别及其以上经理的认可。此时，所述第三方可能以所述当前签核人的身份对签核文件假冒签核并将假冒签核的签核文件发送至下一顺序签核人或发起人端。\n\n[0051]进一步地，获取所述发起人设置的所述电子签批的至少一签核人的签核顺序。根据发起人设置的该电子签批的至少一签核人的签核顺序，检测是否存在下一顺序签核人。当存在所述下一顺序签核人时，响应下一顺序签核人对所述验证码的验证操作，获取服务器端存储的该验证码对应的签核信息。当不存在所述下一顺序签核人时，表示发起人设置的至少一签核人均完成对签核文件的签核，换句话说，最后顺序签核人完成对签核文件签核，响应发起人对所述验证码的验证操作，获取服务器端存储的该验证码对应的签核信息。\n\n[0052]步骤S30，根据所述发起人或所述下一顺序签核人对其接收到的签核文件的签核信息和所述验证码对应的签核信息的比较结果，生成验证结果。\n\n[0053]具体地，当所述比较结果为发起人接收到的签核文件的签核信息和所述验证码对应的签核信息不匹配时，响应发起人的重新签核请求，获取发起人输入或选定的重新签核信息。所述匹配是指签核文件的签核人姓名、签核时间、签核终端识别码等均和所述验证码对应的签核信息一致。所述重新签核信息包括重新签核原因，如签核信息存在伪造风险等。反馈所述重新签核信息和/或发起人接收到的来自最后顺序签核人端的签核文件至最后顺序签核人端，从而最后顺序签核人对签核文件重新签核，确保电子签批的有效性。本实施例中，最后顺序签核人对签核文件重新签核信息自动覆盖原始签核信息。执行步骤S10，即循环执行所述电子签批验证方法。\n\n[0054]进一步地，当所述比较结果为发起人接收到的签核文件的签核信息和所述验证码对应的签核信息匹配时，所述电子签批验证方法结束。\n\n[0055]进一步地，当所述比较结果为所述下一顺序签核人接收到的签核文件的签核信息和所述验证码对应的签核信息匹配时，表示下一顺序签核文件接收到的签核文件来自当前签核人，而非第三方，签核文件的签核信息有效，可以对签核文件继续签核。响应下一顺序签核人的签核请求，获取下一顺序签核人对其接收到的签核文件的签核信息。执行步骤S10，即循环执行所述电子签批验证方法。\n\n[0056]进一步地，当所述比较结果为所述下一顺序签核人接收到的签核文件的签核信息和所述验证码对应的签核信息不匹配时，表示下一顺序签核人接收到的签核文件的签核信息存在伪造风险，需要反馈至当前签核人重新签核，从而确保电子签批的有效性。响应下一顺序签核人的拒绝签核请求，获取所述下一顺序签核人输入的拒绝签核信息。所述拒绝签核信息包括拒绝签核原因，如签核信息存在伪造风险等。反馈所述拒绝签核信息和/或下一顺序签核人接收到来自当前签核人的签核文件至当前签核人端，从而当前签核人对签核文件重新签核，确保电子签批的有效性。执行步骤S10，即循环执行所述电子签批验证方法。\n\n[0057]进一步地，循环执行所述电子签批验证方法，发起人及电子签批的任一签核人对其接收到的签核文件上的签核信息进行验证，验证失败的签核文件直接反馈至上一顺序签核人端重新签核，从而电子签批签核过程的每一环节进行验证，可以有效防止电子签批的签核信息的伪造。\n\n[0058]实施例2\n\n[0059]图2示出了本发明实施例提供的一种电子签批验证方法的流程示意图。如图2所示，本发明实施例提供的电子签批验证方法，包括：\n\n[0060]步骤S1，获取当前签核人对其接收到的签核文件的签核信息，生成对应的验证码。\n\n[0061]其中，步骤S1和步骤S10内容相同。\n\n[0062]步骤S2，获取及根据所述发起人设置的所述电子签批的至少一签核人的签核顺序，检测是否存在所述下一顺序签核人，当不存在所述下一顺序签核人时，执行步骤S31；当存在所述下一顺序签核人时，执行步骤S41。\n\n[0063]具体地，在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。根据发起人设置的该电子签批的至少一签核人的签核顺序，检测是否存在下一顺序签核人。\n\n[0064]步骤S31，当不存在所述下一顺序签核人时，响应所述发起人对所述验证码的验证操作，获取所述服务器端存储的该验证码对应的签核信息。\n\n[0065]具体地，当不存在所述下一顺序签核人时，表示发起人设置的至少一签核人均完成对签核文件的签核，换句话说，最后顺序签核人完成对签核文件签核。发起人接收来自最后顺序签核人的签核文件。响应所述发起人对所述验证码的验证操作，获取所述服务器端存储的该验证码对应的签核信息，从而帮助发起人对接收到的签核文件的签核信息进行识别，确保电子签批的有效性。\n\n[0066]步骤S32，根据所述发起人对其接收到的签核文件的签核信息和所述验证码对应的签核信息的比较结果，响应所述发起人的重新签核请求。\n\n[0067]具体地，当所述比较结果为发起人接收到的签核文件的签核信息和所述验证码对应的签核信息不匹配时，响应所述发起人的重新签核请求，获取发起人输入或选定的重新签核信息。反馈所述重新签核信息和/或起人接收到的来自最后顺序签核人端的签核文件至最后顺序签核人端，从而最后顺序签核人对签核文件重新签核，确保电子签批的有效性。执行步骤S1，即循环执行所述电子签批验证方法。\n\n[0068]进一步地，当所述比较结果为发起人接收到的签核文件的签核信息和所述验证码对应的签核信息匹配时，所述电子签批验证方法结束。\n\n[0069]步骤S41，当存在所述下一顺序签核人时，响应所述下一顺序签核人对所述验证码的验证操作，获取所述服务器端存储的该验证码对应的签核信息。\n\n[0070]具体地，当存在所述下一顺序签核人时，响应下一顺序签核人对所述验证码的验证操作，获取服务器端存储的该验证码对应的签核信息，从而帮助下一顺序签核人对接收到的签核文件的签核信息进行识别，确保电子签批的有效性。\n\n[0071]步骤S42，根据所述下一顺序签核人对其接收到的签核文件的签核信息和所述验证码对应的签核信息的比较结果，响应所述下一顺序签核人的签核请求或拒绝签核请求。\n\n[0072]具体地，当所述比较结果为所述下一顺序签核人接收到的签核文件的签核信息和所述验证码对应的签核信息匹配时，表示下一顺序签核文件接收到的签核文件来自当前签核人，而非第三方，签核文件的签核信息有效，可以对签核文件继续签核。响应下一顺序签核人的签核请求，获取下一顺序签核人对其接收到的签核文件的签核信息。执行步骤S1，即循环执行所述电子签批验证方法。\n\n[0073]进一步地，当所述比较结果为所述下一顺序签核人接收到的签核文件的签核信息和所述验证码对应的签核信息不匹配时，表示下一顺序签核人接收到的签核文件的签核信息存在伪造风险，需要反馈至当前签核人重新签核，从而确保电子签批的有效性。响应下一顺序签核人的拒绝签核请求，获取所述下一顺序签核人输入的拒绝签核信息。所述拒绝签核信息包括拒绝签核原因，如签核信息存在伪造风险等。反馈所述拒绝签核信息和/或下一顺序签核人接收到来自当前签核人的签核文件至当前签核人端，从而当前签核人对签核文件重新签核，确保电子签批的有效性。执行步骤S1，即循环执行所述电子签批验证方法。\n\n[0074]实施例3\n\n[0075]图3示出了本发明实施例提供的一种电子签批验证系统的结构示意图。如图3所示，本发明实施例提供的一种电子签批验证系统100，包括生成单元10、获取单元20、执行单元30、处理器40和服务器50。生成单元10、获取单元20和执行单元30均与处理器40电性连接。服务器50通过移动网络或无线网络等与处理器40通信连接。\n\n[0076]生成单元10用于获取当前签核人对其接收到的签核文件的签核信息，生成对应的验证码。\n\n[0077]具体地，在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。所述当前签核人可以为任一顺序签核人。处理器40响应当前签核人对其接收到的签核文件的签核请求，获取及显示发起人、上一顺序签核人或其他人通过移动网络或无线网络上传的签核文件。所述签核文件是指合同、请假条、样品申请、财务报销等需要至少一签核人签字的文件。\n\n[0078]进一步地，处理器40控制生成单元10获取所述当前签核人在其接收到的签核文件上输入的签核信息，生成与所述签核信息对应的验证码。所述签核信息包括签核人姓名、签核时间、签核终端识别码或签核终端IP地址等。所述验证码可以是二维码、条形码等。\n\n[0079]获取单元20用于响应发起人或下一顺序签核人对验证码的验证操作，获取服务器端存储的该验证码对应的签核信息。本实施例中，获取单元20包括检测模块21和第一获取模块22。\n\n[0080]检测模块21用于获取及根据发起人设置的电子签批的至少一签核人的签核顺序，检测是否存在下一顺序签核人。\n\n[0081]具体地，所述验证码用于帮助下一顺序签核人或发起人识别其接收到的签核文件上签核信息的真伪，从而保证电子签批的有效性。处理器40控制检测模块21根据发起人设置的该电子签批的至少一签核人的签核顺序，检测是否存在下一顺序签核人。\n\n[0082]第一获取模块22用于获取服务器50端存储的验证码对应的签核信息。\n\n[0083]具体地，当存在所述下一顺序签核人时，处理器40控制第一获取模块22响应下一顺序签核人对所述验证码的验证操作，获取服务器50端存储的该验证码对应的签核信息。当不存在所述下一顺序签核人时，表示发起人设置的至少一签核人均完成对签核文件的签核，换句话说，最后顺序签核人完成对签核文件签核，处理器40控制第一获取模块22响应发起人对所述验证码的验证操作，获取服务器50端存储的该验证码对应的签核信息。\n\n[0084]执行单元30用于生成验证结果，即响应下一顺序签核人的签核请求或拒绝签核请求，或响应发起人的重新签核请求。本实施例中，执行单元30包括第二获取模块31和反馈模块32。\n\n[0085]第二获取模块31用于获取下一顺序签核人或发起人输入的信息。\n\n[0086]具体地，处理器40根据发起人或下一顺序签核人对其接收到的签核文件的签核信息和验证码对应的签核信息的比较结果，控制执行单元30响应下一顺序签核人的签核请求或拒绝签核请求，或响应发起人的重新签核请求。\n\n[0087]进一步地，当所述比较结果为发起人接收到的签核文件的签核信息和所述验证码对应的签核信息不匹配时，处理器40控制第二获取模块31响应发起人的重新签核请求，获取发起人输入或选定的重新签核信息。所述匹配是指签核文件的签核人姓名、签核时间、签核终端识别码等均和所述验证码对应的签核信息一致。所述重新签核信息包括重新签核原因，如签核信息存在伪造风险等。\n\n[0088]进一步地，当所述比较结果为所述下一顺序签核人接收到的签核文件的签核信息和所述验证码对应的签核信息匹配时，表示下一顺序签核文件接收到的签核文件来自当前签核人，而非第三方，签核文件的签核信息有效，可以对签核文件继续签核。处理器40控制第二获取模块31响应下一顺序签核人的签核请求，获取下一顺序签核人对其接收到的签核文件的签核信息。\n\n[0089]进一步地，当所述比较结果为所述下一顺序签核人接收到的签核文件的签核信息和所述验证码对应的签核信息不匹配时，表示下一顺序签核人接收到的签核文件的签核信息存在伪造风险，需要反馈至当前签核人重新签核，从而确保电子签批的有效性。处理器40控制第二获取模块31响应下一顺序签核人的拒绝签核请求，获取所述下一顺序签核人输入的拒绝签核信息。所述拒绝签核信息包括拒绝签核原因，如签核信息存在伪造风险等。\n\n[0090]反馈模块32用于反馈签核文件和/或其他信息至当前签核人或最后顺序签核人。\n\n[0091]具体地，处理器40控制反馈模块32反馈所述重新签核信息和/或发起人接收到的来自最后顺序签核人端的签核文件至最后顺序签核人端，从而最后顺序签核人对签核文件重新签核，确保电子签批的有效性。本实施例中，最后顺序签核人对签核文件重新签核信息自动覆盖原始签核信息。此时，处理器40控制生成单元10获取最后顺序签核人在所述反馈的签核文件上的签核信息，重新生成对应的验证码，从而帮助发起人对其接收到的签核文件上的签核信息重新确认。\n\n[0092]进一步地，处理器40控制反馈模块32反馈所述拒绝签核信息和/或下一顺序签核人接收到来自当前签核人的签核文件至当前签核人端，从而当前签核人对签核文件重新签核，确保电子签批的有效性。同理，处理器40控制生成单元10获取当前签核人在所述反馈的签核文件上的签核信息，重新生成对应的验证码。\n\n[0093]本实施例提供的电子签批验证系统100，发起人及电子签批的任一签核人对其接收到的签核文件上的签核信息进行验证，验证失败的签核文件直接反馈至上一顺序签核人端重新签核，从而实现对电子签批签核过程的每一环节进行验证，可以有效防止电子签批的签核信息的伪造。\n\n[0094]本发明实施例提供的电子签批验证方法及系统，根据签核人对签核文件的签核信息，自动生成对应的验证码，该验证码可以帮助下一顺序签核人或发起人识别其接收到的签核文件上签核信息的真伪，对电子签批的签核过程进行验证，从而保证电子签批的有效性，有效避免非法分子对签核文件的假冒签核，对用户造成不必要的损失。\n\n[0095]本发明实施例所提供的系统，其实现原理及产生的技术效果和前述方法实施例相同，为简要描述，系统实施例部分未提及之处，可参考前述方法实施例中相应内容。\n\n[0096]在这里示出和描述的所有示例中，任何具体值应被解释为仅仅是示例性的，而不是为限制，因此，示例性实施例的其他示例可以具有不同的值。应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。\n\n[0097]在本申请所提供的几个实施例中，应该理解到，所揭露的装置可以通过其它的方式实现。以上所描述的装置实施例仅仅是示意性的，例如，所述单元的划分，仅仅为一种逻辑功能划分，实际实现时可以有另外的划分方式，又例如，多个单元或组件可以结合或者可以集成到另一个系统，或一些特征可以忽略，或不执行。另一点，所显示或讨论的相互之间的耦合或直接耦合或通信连接可以是通过一些通信接口，装置或单元的间接耦合或通信连接，可以是电性，机械或其它的形式。\n\n[0098]所述为分离部件说明的单元可以是或者也可以不是物理上分开的，为单元显示的部件可以是或者也可以不是物理单元，即可以位于一个地方，或者也可以分布到多个网络单元上。可以根据实际的需要选择其中的部分或者全部单元来实现本实施例方案的目的。\n\n[0099]另外，在本发明各个实施例中的各功能单元可以集成在一个处理单元中，也可以是各个单元单独物理存在，也可以两个或两个以上单元集成在一个单元中。\n\n[0100]以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应所述以权利要求的保护范围为准。\n\n', '技术领域\n\n[0001]本发明涉及电子签批技术领域，具体而言，涉及一种电子签批验证方法及系统。\n\n背景技术\n\n[0002]对于公司内部签批流程，通常需要将待签批文件打印出来，然后给到各个签批人处进行签批签字盖章。这样的签批流程较为繁琐，工作效率低下。由此，电子签批应运而生。近年来，电子签批在企业流程、行业应用、移动支付和个人信息安全等各种场景中得到越来越多的应用。\n\n[0003]但现有的电子签批大多通过公共网络传输签批文件，缺乏对传输的签批文件的保护机制。对于企业来说，企业的财政开支状况、项目申请及研发文档等都是非常机密的材料，一些不法的竞争者经常通过技术手段窃取机密，甚至以签核人身份对签核文件进行签核操作，而其他签核人对这种行为无法识别，从而使用户遭受巨大的经济损失。\n\n发明内容\n\n[0004]本发明正是基于上述问题，提出了一种可以对电子签批的签核过程进行验证的电子签批验证方法及系统。\n\n[0005]有鉴于此，本发明一方面提出了一种电子签批验证方法，包括：\n\n[0006]获取当前签核人对其接收到的签核文件的签核信息，生成对应的验证码；\n\n[0007]响应发起人或下一顺序签核人对所述验证码的验证操作，获取该验证码对应的签核信息；\n\n[0008]根据所述发起人或所述下一顺序签核人对其接收到的签核文件的签核信息和所述验证码对应的签核信息的比较结果，生成验证结果。\n\n[0009]进一步地，所述“响应发起人或下一顺序签核人对所述验证码的验证操作，获取服务器端存储的该验证码对应的签核信息”包括：\n\n[0010]获取及根据所述发起人设置的所述电子签批的至少一签核人的签核顺序，检测是否存在所述下一顺序签核人；\n\n[0011]当不存在所述下一顺序签核人时，响应所述发起人对所述验证码的验证操作，获取服务器端存储的该验证码对应的签核信息；\n\n[0012]当存在所述下一顺序签核人时，响应所述下一顺序签核人对所述验证码的验证操作，获取所述服务器端存储的该验证码对应的签核信息。\n\n[0013]进一步地，所述“根据所述发起人或所述下一顺序签核人对其接收到的签核文件的签核信息和所述验证码对应的签核信息的比较结果，生成验证结果”包括：\n\n[0014]当所述比较结果为所述下一顺序签核人接收到的签核文件的签核信息和所述验证码对应的签核信息匹配时，响应所述下一顺序签核人的签核请求；\n\n[0015]当所述比较结果为所述下一顺序签核人接收到的签核文件的签核信息和所述验证码对应的签核信息不匹配时，响应所述下一顺序签核人的拒绝签核请求；\n\n[0016]当所述比较结果为所述发起人接收到的签核文件的签核信息和所述验证码对应的签核信息不匹配时，响应所述发起人的重新签核请求。\n\n[0017]进一步地，所述“响应所述下一顺序签核人的签核请求”包括：\n\n[0018]获取所述下一顺序签核人对其接收到的签核文件的签核信息，循环执行所述电子签批验证方法。\n\n[0019]进一步地，所述“响应所述下一顺序签核人的拒绝签核请求”包括：\n\n[0020]获取所述下一顺序签核人输入的拒绝签核信息；\n\n[0021]发送所述拒绝签核信息和/或所述下一顺序签核人接收到的签核文件至所述当前签核人端，循环执行所述电子签批验证方法。\n\n[0022]进一步地，所述“响应所述发起人的重新签核请求”包括：\n\n[0023]获取所述发起人输入的重新签核信息；\n\n[0024]发送所述重新签核信息和/或所述发起人接收到的签核文件至最后顺序签核人端，循环执行所述电子签批验证方法。\n\n[0025]本发明另一方面提供了一种电子签批验证系统，包括生成单元、获取单元、服务器、执行单元和处理器。\n\n[0026]所述生成单元，用于获取当前签核人对其接收到的签核文件的签核信息，生成对应的验证码。\n\n[0027]所述获取单元，用于响应发起人或下一顺序签核人对所述验证码的验证操作，获取该验证码对应的签核信息。\n\n[0028]所述处理器，用于根据所述发起人或所述下一顺序签核人对其接收到的签核文件的签核信息和所述验证码对应的签核信息的比较结果，控制所述执行单元生成验证结果。\n\n[0029]进一步地，所述获取单元包括检测模块和获取模块。\n\n[0030]所述检测模块，用于获取及根据所述发起人设置的所述电子签批的至少一签核人的签核顺序，检测是否存在所述下一顺序签核人。\n\n[0031]所述处理器，还用于当不存在所述下一顺序签核人时，控制所述获取模块响应所述发起人对该验证码的验证操作，获取服务器端存储的该验证码对应的签核信息；当存在所述下一顺序签核人时，控制所述获取模块响应所述下一顺序签核人对该验证码的验证操作，获取所述服务器端存储的该验证码对应的签核信息。\n\n[0032]进一步地，所述执行单元包括获取模块和反馈模块。所述获取模块，用于获取所述下一顺序签核人输入的拒绝签核信息，或对其接收到的签核文件的签核信息。所述反馈模块，用于发送所述拒绝签核信息和/或所述下一顺序签核人接收到的签核文件至所述当前签核人端。\n\n[0033]进一步地，所述执行单元包括获取模块和反馈模块。所述获取模块，用于获取所述发起人输入的重新签核信息。所述反馈模块，用于发送所述重新签核信息和/或所述发起人接收到的签核文件至最后顺序签核人端。\n\n[0034]本发明实施例提供的电子签批验证方法及系统，根据签核人对签核文件的签核信息，自动生成对应的验证码，该验证码可以帮助下一顺序签核人或发起人识别其接收到的签核文件上签核信息的真伪，对电子签批的签核过程进行验证，从而保证电子签批的有效性，有效避免非法分子对签核文件的假冒签核，对用户造成不必要的损失。\n\n[0035]为使本发明的上述目的、特征和优点能更明显易懂，下文特举较佳实施例，并配合所附附图，作详细说明如下。\n\n附图说明\n\n[0036]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0037]图1示出了本发明实施例提供的一种电子签批验证方法的第一流程示意图；\n\n[0038]图2示出了本发明实施例提供的一种电子签批验证方法的第二流程示意图；\n\n[0039]图3示出了本发明实施例提供的一种电子签批验证系统的结构示意图。\n\n[0040]主要元件符号说明：\n\n[0041]100-电子签批验证系统；10-生成单元；20-获取单元；21-检测模块；22-第一获取模块；30-执行单元；31-第二获取模块；32-反馈模块；40-处理器；50-服务器。\n\n具体实施方式\n\n[0042]为了便于理解本发明，下面将参照相关附图对电子签批验证方法及系统进行更清楚、完整地描述。附图中给出了电子签批验证方法及系统的优选实施例。电子签批验证方法及系统可以通过许多不同的形式来实现，并不限于本文所描述的实施例。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0043]实施例1\n\n[0044]图1示出了本发明实施例提供的一种电子签批验证方法的流程示意图。如图1所示，本发明实施例提供的电子签批验证方法，包括：\n\n[0045]步骤S10，获取当前签核人对其接收到的签核文件的签核信息，生成对应的验证码。\n\n[0046]具体地，在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。所述当前签核人可以为任一顺序签核人。响应所述当前签核人对其接收到的签核文件的签核请求，获取及显示发起人、上一顺序签核人或其他人通过移动网络或无线网络上传的签核文件。所述签核文件是指合同、请假条、样品申请、财务报销等需要至少一签核人签字的文件。\n\n[0047]需要说明的是，来自上一顺序签核人的签核文件包括所述上一顺序签核人和/或相对所述上一顺序签核人更靠前顺序签核人的签核信息，换句话说，来自所述签核顺序签核人的签核文件包括发起人设置的至少一签核人中部分签核人的签核信息。例如，一电子签批的签核顺序为研发部经理、物料部经理、财务部经理、董事长，假设当前签核人为财务部经理，则上一顺序签核人为物料部经理，下一顺序签核人为董事长。财务部经理接收到的签核文件包括物料部经理和/或研发部经理的签核信息。发起人接收来自最后顺序签核人的签核文件，本举例中，发起人接收来自董事长的签核文件。\n\n[0048]进一步地，获取所述当前签核人在其接收到的签核文件上输入的签核信息，生成与所述签核信息对应的验证码。所述签核信息包括签核人姓名、签核时间、签核终端识别码或签核终端IP地址等。所述验证码可以是二维码、条形码等。\n\n[0049]步骤S20，响应发起人或下一顺序签核人对所述验证码的验证操作，获取该验证码对应的签核信息。\n\n[0050]具体地，所述验证码用于帮助下一顺序签核人或发起人识别其接收到的签核文件上签核信息的真伪，从而保证电子签批的有效性。由于发起人接收到的签核文件并非一定是来自发起人设置的最后顺序签核人，下一顺序签核人接收到的签核文件也并非一定是来自发起人设置的当前顺序签核人，也有可能是来自任一第三方假冒签核的签核文件。例如，所述签核文件为一项财务报销，可以理解的是，通常，公司规定超过一定额度的财务报销必需由A级及其以上经理签核，如果所述第三方为了进行财务虚假报销，如增加非报销内容等，必须得到A级别及其以上经理的认可。此时，所述第三方可能以所述当前签核人的身份对签核文件假冒签核并将假冒签核的签核文件发送至下一顺序签核人或发起人端。\n\n[0051]进一步地，获取所述发起人设置的所述电子签批的至少一签核人的签核顺序。根据发起人设置的该电子签批的至少一签核人的签核顺序，检测是否存在下一顺序签核人。当存在所述下一顺序签核人时，响应下一顺序签核人对所述验证码的验证操作，获取服务器端存储的该验证码对应的签核信息。当不存在所述下一顺序签核人时，表示发起人设置的至少一签核人均完成对签核文件的签核，换句话说，最后顺序签核人完成对签核文件签核，响应发起人对所述验证码的验证操作，获取服务器端存储的该验证码对应的签核信息。\n\n[0052]步骤S30，根据所述发起人或所述下一顺序签核人对其接收到的签核文件的签核信息和所述验证码对应的签核信息的比较结果，生成验证结果。\n\n[0053]具体地，当所述比较结果为发起人接收到的签核文件的签核信息和所述验证码对应的签核信息不匹配时，响应发起人的重新签核请求，获取发起人输入或选定的重新签核信息。所述匹配是指签核文件的签核人姓名、签核时间、签核终端识别码等均和所述验证码对应的签核信息一致。所述重新签核信息包括重新签核原因，如签核信息存在伪造风险等。反馈所述重新签核信息和/或发起人接收到的来自最后顺序签核人端的签核文件至最后顺序签核人端，从而最后顺序签核人对签核文件重新签核，确保电子签批的有效性。本实施例中，最后顺序签核人对签核文件重新签核信息自动覆盖原始签核信息。执行步骤S10，即循环执行所述电子签批验证方法。\n\n[0054]进一步地，当所述比较结果为发起人接收到的签核文件的签核信息和所述验证码对应的签核信息匹配时，所述电子签批验证方法结束。\n\n[0055]进一步地，当所述比较结果为所述下一顺序签核人接收到的签核文件的签核信息和所述验证码对应的签核信息匹配时，表示下一顺序签核文件接收到的签核文件来自当前签核人，而非第三方，签核文件的签核信息有效，可以对签核文件继续签核。响应下一顺序签核人的签核请求，获取下一顺序签核人对其接收到的签核文件的签核信息。执行步骤S10，即循环执行所述电子签批验证方法。\n\n[0056]进一步地，当所述比较结果为所述下一顺序签核人接收到的签核文件的签核信息和所述验证码对应的签核信息不匹配时，表示下一顺序签核人接收到的签核文件的签核信息存在伪造风险，需要反馈至当前签核人重新签核，从而确保电子签批的有效性。响应下一顺序签核人的拒绝签核请求，获取所述下一顺序签核人输入的拒绝签核信息。所述拒绝签核信息包括拒绝签核原因，如签核信息存在伪造风险等。反馈所述拒绝签核信息和/或下一顺序签核人接收到来自当前签核人的签核文件至当前签核人端，从而当前签核人对签核文件重新签核，确保电子签批的有效性。执行步骤S10，即循环执行所述电子签批验证方法。\n\n[0057]进一步地，循环执行所述电子签批验证方法，发起人及电子签批的任一签核人对其接收到的签核文件上的签核信息进行验证，验证失败的签核文件直接反馈至上一顺序签核人端重新签核，从而电子签批签核过程的每一环节进行验证，可以有效防止电子签批的签核信息的伪造。\n\n[0058]实施例2\n\n[0059]图2示出了本发明实施例提供的一种电子签批验证方法的流程示意图。如图2所示，本发明实施例提供的电子签批验证方法，包括：\n\n[0060]步骤S1，获取当前签核人对其接收到的签核文件的签核信息，生成对应的验证码。\n\n[0061]其中，步骤S1和步骤S10内容相同。\n\n[0062]步骤S2，获取及根据所述发起人设置的所述电子签批的至少一签核人的签核顺序，检测是否存在所述下一顺序签核人，当不存在所述下一顺序签核人时，执行步骤S31；当存在所述下一顺序签核人时，执行步骤S41。\n\n[0063]具体地，在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。根据发起人设置的该电子签批的至少一签核人的签核顺序，检测是否存在下一顺序签核人。\n\n[0064]步骤S31，当不存在所述下一顺序签核人时，响应所述发起人对所述验证码的验证操作，获取所述服务器端存储的该验证码对应的签核信息。\n\n[0065]具体地，当不存在所述下一顺序签核人时，表示发起人设置的至少一签核人均完成对签核文件的签核，换句话说，最后顺序签核人完成对签核文件签核。发起人接收来自最后顺序签核人的签核文件。响应所述发起人对所述验证码的验证操作，获取所述服务器端存储的该验证码对应的签核信息，从而帮助发起人对接收到的签核文件的签核信息进行识别，确保电子签批的有效性。\n\n[0066]步骤S32，根据所述发起人对其接收到的签核文件的签核信息和所述验证码对应的签核信息的比较结果，响应所述发起人的重新签核请求。\n\n[0067]具体地，当所述比较结果为发起人接收到的签核文件的签核信息和所述验证码对应的签核信息不匹配时，响应所述发起人的重新签核请求，获取发起人输入或选定的重新签核信息。反馈所述重新签核信息和/或起人接收到的来自最后顺序签核人端的签核文件至最后顺序签核人端，从而最后顺序签核人对签核文件重新签核，确保电子签批的有效性。执行步骤S1，即循环执行所述电子签批验证方法。\n\n[0068]进一步地，当所述比较结果为发起人接收到的签核文件的签核信息和所述验证码对应的签核信息匹配时，所述电子签批验证方法结束。\n\n[0069]步骤S41，当存在所述下一顺序签核人时，响应所述下一顺序签核人对所述验证码的验证操作，获取所述服务器端存储的该验证码对应的签核信息。\n\n[0070]具体地，当存在所述下一顺序签核人时，响应下一顺序签核人对所述验证码的验证操作，获取服务器端存储的该验证码对应的签核信息，从而帮助下一顺序签核人对接收到的签核文件的签核信息进行识别，确保电子签批的有效性。\n\n[0071]步骤S42，根据所述下一顺序签核人对其接收到的签核文件的签核信息和所述验证码对应的签核信息的比较结果，响应所述下一顺序签核人的签核请求或拒绝签核请求。\n\n[0072]具体地，当所述比较结果为所述下一顺序签核人接收到的签核文件的签核信息和所述验证码对应的签核信息匹配时，表示下一顺序签核文件接收到的签核文件来自当前签核人，而非第三方，签核文件的签核信息有效，可以对签核文件继续签核。响应下一顺序签核人的签核请求，获取下一顺序签核人对其接收到的签核文件的签核信息。执行步骤S1，即循环执行所述电子签批验证方法。\n\n[0073]进一步地，当所述比较结果为所述下一顺序签核人接收到的签核文件的签核信息和所述验证码对应的签核信息不匹配时，表示下一顺序签核人接收到的签核文件的签核信息存在伪造风险，需要反馈至当前签核人重新签核，从而确保电子签批的有效性。响应下一顺序签核人的拒绝签核请求，获取所述下一顺序签核人输入的拒绝签核信息。所述拒绝签核信息包括拒绝签核原因，如签核信息存在伪造风险等。反馈所述拒绝签核信息和/或下一顺序签核人接收到来自当前签核人的签核文件至当前签核人端，从而当前签核人对签核文件重新签核，确保电子签批的有效性。执行步骤S1，即循环执行所述电子签批验证方法。\n\n[0074]实施例3\n\n[0075]图3示出了本发明实施例提供的一种电子签批验证系统的结构示意图。如图3所示，本发明实施例提供的一种电子签批验证系统100，包括生成单元10、获取单元20、执行单元30、处理器40和服务器50。生成单元10、获取单元20和执行单元30均与处理器40电性连接。服务器50通过移动网络或无线网络等与处理器40通信连接。\n\n[0076]生成单元10用于获取当前签核人对其接收到的签核文件的签核信息，生成对应的验证码。\n\n[0077]具体地，在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。所述当前签核人可以为任一顺序签核人。处理器40响应当前签核人对其接收到的签核文件的签核请求，获取及显示发起人、上一顺序签核人或其他人通过移动网络或无线网络上传的签核文件。所述签核文件是指合同、请假条、样品申请、财务报销等需要至少一签核人签字的文件。\n\n[0078]进一步地，处理器40控制生成单元10获取所述当前签核人在其接收到的签核文件上输入的签核信息，生成与所述签核信息对应的验证码。所述签核信息包括签核人姓名、签核时间、签核终端识别码或签核终端IP地址等。所述验证码可以是二维码、条形码等。\n\n[0079]获取单元20用于响应发起人或下一顺序签核人对验证码的验证操作，获取服务器端存储的该验证码对应的签核信息。本实施例中，获取单元20包括检测模块21和第一获取模块22。\n\n[0080]检测模块21用于获取及根据发起人设置的电子签批的至少一签核人的签核顺序，检测是否存在下一顺序签核人。\n\n[0081]具体地，所述验证码用于帮助下一顺序签核人或发起人识别其接收到的签核文件上签核信息的真伪，从而保证电子签批的有效性。处理器40控制检测模块21根据发起人设置的该电子签批的至少一签核人的签核顺序，检测是否存在下一顺序签核人。\n\n[0082]第一获取模块22用于获取服务器50端存储的验证码对应的签核信息。\n\n[0083]具体地，当存在所述下一顺序签核人时，处理器40控制第一获取模块22响应下一顺序签核人对所述验证码的验证操作，获取服务器50端存储的该验证码对应的签核信息。当不存在所述下一顺序签核人时，表示发起人设置的至少一签核人均完成对签核文件的签核，换句话说，最后顺序签核人完成对签核文件签核，处理器40控制第一获取模块22响应发起人对所述验证码的验证操作，获取服务器50端存储的该验证码对应的签核信息。\n\n[0084]执行单元30用于生成验证结果，即响应下一顺序签核人的签核请求或拒绝签核请求，或响应发起人的重新签核请求。本实施例中，执行单元30包括第二获取模块31和反馈模块32。\n\n[0085]第二获取模块31用于获取下一顺序签核人或发起人输入的信息。\n\n[0086]具体地，处理器40根据发起人或下一顺序签核人对其接收到的签核文件的签核信息和验证码对应的签核信息的比较结果，控制执行单元30响应下一顺序签核人的签核请求或拒绝签核请求，或响应发起人的重新签核请求。\n\n[0087]进一步地，当所述比较结果为发起人接收到的签核文件的签核信息和所述验证码对应的签核信息不匹配时，处理器40控制第二获取模块31响应发起人的重新签核请求，获取发起人输入或选定的重新签核信息。所述匹配是指签核文件的签核人姓名、签核时间、签核终端识别码等均和所述验证码对应的签核信息一致。所述重新签核信息包括重新签核原因，如签核信息存在伪造风险等。\n\n[0088]进一步地，当所述比较结果为所述下一顺序签核人接收到的签核文件的签核信息和所述验证码对应的签核信息匹配时，表示下一顺序签核文件接收到的签核文件来自当前签核人，而非第三方，签核文件的签核信息有效，可以对签核文件继续签核。处理器40控制第二获取模块31响应下一顺序签核人的签核请求，获取下一顺序签核人对其接收到的签核文件的签核信息。\n\n[0089]进一步地，当所述比较结果为所述下一顺序签核人接收到的签核文件的签核信息和所述验证码对应的签核信息不匹配时，表示下一顺序签核人接收到的签核文件的签核信息存在伪造风险，需要反馈至当前签核人重新签核，从而确保电子签批的有效性。处理器40控制第二获取模块31响应下一顺序签核人的拒绝签核请求，获取所述下一顺序签核人输入的拒绝签核信息。所述拒绝签核信息包括拒绝签核原因，如签核信息存在伪造风险等。\n\n[0090]反馈模块32用于反馈签核文件和/或其他信息至当前签核人或最后顺序签核人。\n\n[0091]具体地，处理器40控制反馈模块32反馈所述重新签核信息和/或发起人接收到的来自最后顺序签核人端的签核文件至最后顺序签核人端，从而最后顺序签核人对签核文件重新签核，确保电子签批的有效性。本实施例中，最后顺序签核人对签核文件重新签核信息自动覆盖原始签核信息。此时，处理器40控制生成单元10获取最后顺序签核人在所述反馈的签核文件上的签核信息，重新生成对应的验证码，从而帮助发起人对其接收到的签核文件上的签核信息重新确认。\n\n[0092]进一步地，处理器40控制反馈模块32反馈所述拒绝签核信息和/或下一顺序签核人接收到来自当前签核人的签核文件至当前签核人端，从而当前签核人对签核文件重新签核，确保电子签批的有效性。同理，处理器40控制生成单元10获取当前签核人在所述反馈的签核文件上的签核信息，重新生成对应的验证码。\n\n[0093]本实施例提供的电子签批验证系统100，发起人及电子签批的任一签核人对其接收到的签核文件上的签核信息进行验证，验证失败的签核文件直接反馈至上一顺序签核人端重新签核，从而实现对电子签批签核过程的每一环节进行验证，可以有效防止电子签批的签核信息的伪造。\n\n[0094]本发明实施例提供的电子签批验证方法及系统，根据签核人对签核文件的签核信息，自动生成对应的验证码，该验证码可以帮助下一顺序签核人或发起人识别其接收到的签核文件上签核信息的真伪，对电子签批的签核过程进行验证，从而保证电子签批的有效性，有效避免非法分子对签核文件的假冒签核，对用户造成不必要的损失。\n\n[0095]本发明实施例所提供的系统，其实现原理及产生的技术效果和前述方法实施例相同，为简要描述，系统实施例部分未提及之处，可参考前述方法实施例中相应内容。\n\n[0096]在这里示出和描述的所有示例中，任何具体值应被解释为仅仅是示例性的，而不是为限制，因此，示例性实施例的其他示例可以具有不同的值。应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。\n\n[0097]在本申请所提供的几个实施例中，应该理解到，所揭露的装置可以通过其它的方式实现。以上所描述的装置实施例仅仅是示意性的，例如，所述单元的划分，仅仅为一种逻辑功能划分，实际实现时可以有另外的划分方式，又例如，多个单元或组件可以结合或者可以集成到另一个系统，或一些特征可以忽略，或不执行。另一点，所显示或讨论的相互之间的耦合或直接耦合或通信连接可以是通过一些通信接口，装置或单元的间接耦合或通信连接，可以是电性，机械或其它的形式。\n\n[0098]所述为分离部件说明的单元可以是或者也可以不是物理上分开的，为单元显示的部件可以是或者也可以不是物理单元，即可以位于一个地方，或者也可以分布到多个网络单元上。可以根据实际的需要选择其中的部分或者全部单元来实现本实施例方案的目的。\n\n[0099]另外，在本发明各个实施例中的各功能单元可以集成在一个处理单元中，也可以是各个单元单独物理存在，也可以两个或两个以上单元集成在一个单元中。\n\n[0100]以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应所述以权利要求的保护范围为准。\n\n');
INSERT INTO `os_patent_instruction_text` VALUES (11134, 24072, '技术领域\n\n[0001]本发明涉及电子签批技术领域，具体而言，涉及一种电子签批安全管理方法及系统。\n\n背景技术\n\n[0002]对于公司内部签批流程，通常需要将待签批文件打印出来，然后给到各个签批人处进行签批签字盖章。这样的签批流程较为繁琐，工作效率低下。由此，电子签批应运而生。近年来，电子签批在企业流程、行业应用、移动支付和个人信息安全等各种场景中得到越来越多的应用。\n\n[0003]但现有的电子签批大多通过公共网络传输签批文件，缺乏对传输的签批文件的保护机制。对于企业来说，企业的财政开支状况、项目申请及研发文档等都是非常机密的材料，一些不法的竞争者经常通过技术手段窃取机密，使受害者遭受巨大的经济损失。\n\n发明内容\n\n[0004]本发明正是基于上述问题，提出了一种对签批文件具有保护机制的电子签批方法及系统。\n\n[0005]有鉴于此，本发明一方面提出了一种电子签批安全管理方法，包括：\n\n[0006]响应发起人的电子签批请求，获取所述电子签批的类型及待签核文件；\n\n[0007]比较所述电子签批的类型和存储的至少一预设类型；\n\n[0008]当所述电子签批的类型属于任一所述预设类型时，加密所述待签核文件。\n\n[0009]进一步地，还包括：\n\n[0010]响应发起人的电子签批请求，获取发起人设置的至少一签核人的签核顺序；\n\n[0011]根据所述签核顺序，生成文件传输路径。\n\n[0012]进一步地，还包括：\n\n[0013]当所述电子签批的类型不属于任一所述预设类型时，根据所述文件传输路径建立一常规通道；\n\n[0014]在所述常规通道传输所述待签核文件至签核人端；\n\n[0015]当接收到来自签核人端的已签核文件时，关闭所述常规通道。\n\n[0016]进一步地，所述“加密所述待签核文件”包括：\n\n[0017]根据所述文件传输路径建立一常规通道；\n\n[0018]对所述常规通道进行加密，建立一加密通道；\n\n[0019]在所述加密通道传输所述待签核文件至签核人端；\n\n[0020]当接收到来自签核人端的已签核文件时，关闭所述加密通道。\n\n[0021]进一步地，所述“加密所述待签核文件”包括：\n\n[0022]根据所述文件传输路径建立一常规通道；\n\n[0023]对所述待签核文件加密；\n\n[0024]在所述常规通道传输所述加密的待签核文件至签核人端；\n\n[0025]接收来自签核人端的加密的已签核文件，根据存储的发起人和签核人之间关联的解密密钥，对所述加密的已签核文件解密；\n\n[0026]关闭所述常规通道。\n\n[0027]本发明另一方面还提供了一种电子签批安全管理系统，包括获取单元、存储器、比较单元和处理器。\n\n[0028]所述获取单元，用于响应发起人的电子签批请求，获取所述电子签批的类型及待签核文件。\n\n[0029]所述比较单元，用于比较所述电子签批的类型和所述存储器存储的至少一预设类型，生成比较结果。\n\n[0030]所述处理器，用于当所述电子签批的类型属于任一所述预设类型时，加密所述待签核文件。\n\n[0031]进一步地，所述获取单元还用于响应发起人的电子签批请求获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。\n\n[0032]进一步地，还包括传输单元，所述传输单元包括通道建立模块、文件传输模块和通道关闭模块。通道建立模块，用于根据所述文件传输路径建立一常规通道。文件传输模块，用于在所述常规通道发送所述待签核文件至签核人端，及接收来自签核人端的已签核文件。通道关闭模块，用于关闭所述常规通道。\n\n[0033]进一步地，还包括传输单元，所述传输单元包括通道建立模块、加密模块、文件传输模块和通道关闭模块。通道建立模块，用于根据所述文件传输路径建立一常规通道。加密模块，用于对所述常规通道进行加密，建立一加密通道。文件传输模块，用于在所述加密通道发送所述待签核文件至签核人端，及接收来自签核人端的已签核文件。通道关闭模块，用于关闭所述加密通道。\n\n[0034]进一步地，还包括传输单元，所述传输单元包括通道建立模块，加密模块、文件传输模块、解密模块和通道关闭模块。通道建立模块，用于根据所述文件传输路径建立一常规通道。加密模块，用于对所述待签核文件加密。文件传输模块，用于在所述常规通道发送所述加密的待签核文件至签核人端，及接收来自签核人端的加密的已签核文件。解密模块，用于所述存储器存储的发起人和签核人之间关联的解密密钥，对所述加密的已签核文件解密。通道关闭模块，用于关闭所述常规通道。\n\n[0035]本发明实施例提供的电子签批安全管理方法及系统，自动识别发起人发起的电子签批的类型，并根据存储的至少一预设类型判断该电子签批的重要性，对属于预设类型的电子签批加密传输，从而避免非法分子对重要信息的窃取，对用户造成不必要的损失。\n\n[0036]为使本发明的上述目的、特征和优点能更明显易懂，下文特举较佳实施例，并配合所附附图，作详细说明如下。\n\n附图说明\n\n[0037]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0038]图1示出了本发明实施例提供的一种电子签批安全管理方法的第一流程示意图；\n\n[0039]图2示出了本发明实施例提供的一种电子签批安全管理方法的第二流程示意图；\n\n[0040]图3示出了本发明实施例提供的一种电子签批安全管理系统的结构示意图。\n\n[0041]主要元件符号说明：\n\n[0042]100-电子签批安全管理系统；10-获取单元；20-存储器；30-比较单元；40-传输单元；41-通道建立模块；42-文件传输模块；43-通道关闭模块；44-通道加密模块；45-文件加密模块；46-文件解密模块；50-处理器。\n\n具体实施方式\n\n[0043]为了便于理解本发明，下面将参照相关附图对电子签批安全管理方法及系统进行更清楚、完整地描述。附图中给出了电子签批安全管理方法及系统的优选实施例。电子签批安全管理方法及系统可以通过许多不同的形式来实现，并不限于本文所描述的实施例。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0044]实施例1\n\n[0045]图1示出了本发明实施例提供的一种电子签批安全管理方法的流程示意图。如图1所示，本发明实施例提供的电子签批安全管理方法，包括：\n\n[0046]步骤S10，响应发起人的电子签批请求，获取所述电子签批的类型及待签核文件。\n\n[0047]具体地，响应发起人在用户终端的电子签批请求，获取发起人发起的电子签批的类型，以及发起人设置的至少一签核人。所述用户终端可以是手机、电脑等。在注册账户后，用户可以通过安装在用户终端的电子签批软件或用户终端浏览器中的电子签批网页完成电子签批流程。根据待签核事项的重要性或签核人的职位等，发起人可以通过用户终端上的电子签批软件设置所述电子签批为不同类型，如发起人选定的职位最高的签核人为董事长，则设置该电子签批为类型A；发起人发起的电子签批涉及商业秘密，则设置该电子签批为类型B等。\n\n[0048]进一步地，响应发起人在用户终端的电子签批请求，获取发起人通过移动网络或无线网络上传的待签核文件。所述待签核文件是指合同、请假条、样品申请单等需要至少一签核人签字的文件。\n\n[0049]进一步地，响应发起人的电子签批请求，获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。根据获取的签核顺序，生成对应的文件传输路径。所述文件传输路径是指待签核文件在不同传输节点间的流转路径。例如，一电子签批的签核顺序为物料部经理、财务部经理、研发部经理，则对应的文件传输路径为发起人端、物料部经理端、品质部经理端、研发部经理端、发起人端。\n\n[0050]步骤S20，比较所述电子签批的类型和存储的至少一预设类型，生成比较结果。\n\n[0051]具体地，获取服务器端存储的至少一预设类型。所述预设类型为区分待签核文件重要性的标准。比较发起人发起的电子签批的类型和所述预设类型，生成比较结果。当所述电子签批的类型不属于任一所述预设类型时，表示待签核文件重要性弱，对保密工作不做要求等；但当所述电子签批的类型属于一所述预设类型时，表示待签核文件重要性强，需要保密签核等。\n\n[0052]步骤S30，当所述电子签批的类型属于任一所述预设类型时，加密所述待签核文件。\n\n[0053]具体地，当所述比较结果为发起人发起的电子签批的类型不属于任一所述预设类型时，常规传输所述待签核文件。根据所述文件传输路径建立一常规通道。所述常规通道为不做加密、加扰等预处理的信号传输通道。根据发起人设置的签核顺序在常规通道传输待签核文件至每一签核人端。优选地，当接收到来自最后一签核人完成签批的已签核文件时，关闭所述常规通道，从而节约网络资源。\n\n[0054]进一步地，当所述比较结果为发起人发起的电子签批的类型属于一所述预设类型时，加密传输所述待签核文件。具体地，根据所述文件传输路径建立一常规通道。根据HTTPS协议(Hyper Text Transfer Protocol over Secure Socket Layer，基于SSL的超文本传输协议)、SSL协议(Secure Sockets Layer，安全套接层)、CA认证(CertificateAuthority，认证授权)、VPN(Virtual Private Network，虚拟专用网)或RAR压缩加密等加密方式对所述常规通道加密，从而建立一加密通道，确保信息的安全性。根据发起人设置的签核顺序在加密通道传输待签核文件至每一签核人端。优选地，当接收到来自最后一签核人完成签批的已签核文件时，关闭所述加密通道，从而节约网络资源。\n\n[0055]实施例2\n\n[0056]图2示出了本发明实施例提供的一种电子签批安全管理方法的流程示意图。如图2所示，本发明实施例提供的电子签批安全管理方法，包括：\n\n[0057]步骤S1，响应发起人的电子签批请求，获取所述电子签批的类型及待签核文件。\n\n[0058]具体地，响应发起人在用户终端的电子签批请求，获取发起人发起的电子签批的类型，发起人设置的至少一签核人以及发起人通过移动网络或无线网络上传的待签核文件。所述用户终端可以是手机、电脑等。在注册账户后，用户可以通过安装在用户终端的电子签批软件或用户终端浏览器中的电子签批网页完成电子签批流程。\n\n[0059]步骤S2，响应发起人的电子签批请求，获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。\n\n[0060]需要说明的是，步骤S1和步骤S2的执行不分先后顺序。\n\n[0061]具体地，响应发起人的电子签批请求，获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。根据获取的签核顺序，生成对应的文件传输路径。\n\n[0062]步骤S3，比较所述电子签批的类型和存储的至少一预设类型，当所述电子签批的类型不属于任一所述预设类型时，执行步骤S4；当所述电子签批的类型属于所述预设类型时，执行步骤S5。\n\n[0063]具体地，获取服务器端存储的至少一预设类型。所述预设类型为区分待签核文件重要性的标准。比较发起人发起的电子签批的类型和所述预设类型。当所述电子签批的类型不属于任一所述预设类型时，表示待签核文件重要性弱，对保密工作不做要求等，执行步骤S4；当所述电子签批的类型属于所述预设类型时，表示待签核文件重要性强，需要保密签核等，执行步骤S5。\n\n[0064]步骤S4，常规传输所述待签核文件。\n\n[0065]具体地，当发起人发起的电子签批的类型不属于任一所述预设类型时，常规传输所述待签核文件。根据所述文件传输路径建立一常规通道。根据发起人设置的签核顺序在常规通道传输待签核文件至每一签核人端。优选地，当接收到来自最后一签核人完成签批的已签核文件时，关闭所述常规通道，从而节约网络资源。\n\n[0066]步骤S5，加密传输所述待签核文件。\n\n[0067]具体地，当发起人发起的电子签批的类型属于所述预设类型时，加密传输所述待签核文件。本实施例中，加密传输所述待签核文件包括两种实施方式。一种实施方式为建立一加密通道，及在该加密通道传输所述待签核文件。具体地，根据所述文件传输路径建立一常规通道。根据HTTPS协议、SSL协议、CA认证、VPN或RAR压缩加密等加密方式对所述常规通道加密，从而建立一加密通道。根据发起人设置的签核顺序在加密通道传输待签核文件至每一签核人端。优选地，当接收到来自最后一签核人完成签批的已签核文件时，关闭所述加密通道，从而节约网络资源。\n\n[0068]另一种实施方式为建立一常规通道，对所述待签核文件加密，及在所述常规通道传输所述加密的待签核文件。具体地，根据所述文件传输路径建立一常规通道。根据SSH协议(SecureShell，安全外壳协议)、PGP协议(Pretty Good Privacy，安全加密)、RSA(非对称加密算法)或用户口令加密等加密方式对所述待签核文件加密。根据发起人设置的签核顺序在常规通道传输待签核文件至每一签核人端。当接收到来自最后一签核人完成签批的加密的已签核文件时，根据存储的解密密钥，对所述加密的已签核文件解密。所述解密密钥可以是发起人和签核人之间预先约定的口令、密码等。优选地，当接收到来自最后一签核人完成签批的加密的已签核文件时，关闭所述常规通道，从而节约网络资源。这种方式对传输通道要求比较低，且文件加密技术相比通道加密技术更容易实现。\n\n[0069]实施例3\n\n[0070]图3示出了本发明实施例提供的一种电子签批安全管理系统的结构示意图。如图3所示，本发明实施例提供的一种电子签批安全管理系统100，包括获取单元10、存储器20、比较单元30、传输单元40和处理器50。获取单元10、存储器20、比较单元30和传输单元40均与处理器50通信连接。\n\n[0071]获取单元10用于响应发起人的电子签批请求，获取所述电子签批的类型及待签核文件，获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。\n\n[0072]具体地，根据待签核事项的重要性或签核人的职位等，发起人可以通过用户终端上的电子签批软件设置所述电子签批为不同类型。处理器50控制获取单元10响应发起人的电子签批请求，获取发起人发起的电子签批的类型。同时，处理器50控制获取单元10获取发起人通过移动网络或无线网络上传的待签核文件。所述待签核文件是指合同、请假条、样品申请单等需要至少一签核人签字的文件。进一步地，在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。处理器50控制获取单元10获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。所述文件传输路径是指待签核文件在不同传输节点间的流转路径。\n\n[0073]存储器20用于存储至少一预设类型。所述预设类型为区分待签核文件重要性的标准，如涉及商业秘密等的待签核文件的类型为一预设类型。\n\n[0074]比较单元30用于比较发起人发起的电子签批的类型和所述预设类型，生成比较结果。\n\n[0075]传输单元40用于传输所述待签核文件。\n\n[0076]本实施例中，传输单元40包括通道建立模块41、文件传输模块42和通道关闭模块43。通道建立模块41用于根据所述文件传输路径建立一常规通道。文件传输模块42用于在所述常规通道发送所述待签核文件至签核人端，及接收来自签核人端的已签核文件。通道关闭模块43用于关闭所述常规通道。\n\n[0077]进一步地，传输单元40还包括通道加密模块44。通道加密模块44用于对所述常规通道进行加密及安全认证，建立一加密通道。文件传输模块42还用于在所述加密通道发送所述待签核文件至签核人端，及接收来自签核人端的已签核文件。通道关闭模块43还用于关闭所述加密通道。\n\n[0078]处理器50用于根据所述比较结果控制传输单元40加密传输或常规传输所述待签核文件。\n\n[0079]当比较单元30生成的比较结果为发起人发起的电子签批的类型不属于存储器20存储的任一预设类型时，处理器50控制传输单元40常规传输所述待签核文件。具体地，处理器50控制通道建立模块41根据所述文件传输路径建立一常规通道，及控制文件传输模块42根据发起人设置的签核顺序在常规通道传输待签核文件至每一签核人端。优选地，当文件传输模块42接收到来自最后一签核人完成签批的已签核文件时，处理器50控制通道关闭模块43关闭所述常规通道，从而节约网络资源。\n\n[0080]当比较单元30生成的比较结果为发起人发起的电子签批的类型属于存储器20存储的一预设类型时，处理器50控制传输单元40加密传输所述待签核文件。具体地，处理器50控制通道建立模块41根据所述文件传输路径建立一常规通道，及控制通道加密模块44根据HTTPS协议、SSL协议、CA认证、VPN或RAR压缩加密等加密方式对所述常规通道加密，从而建立一加密通道。处理器50控制文件传输模块42根据发起人设置的签核顺序在加密通道传输待签核文件至每一签核人端。优选地，当文件传输模块42接收到来自最后一签核人完成签批的已签核文件时，处理器50控制通道关闭模块43关闭所述加密通道，从而节约网络资源。\n\n[0081]另一实施例中，传输单元40还包括文件加密模块45和文件解密模块46。文件加密模块45用于对所述待签核文件加密。文件传输模块42还用于在所述常规通道发送所述加密的待签核文件至签核人端，及接收来自签核人端的加密的已签核文件。文件解密模块46用于所述存储器存储的发起人和签核人之间关联的解密密钥，对所述加密的已签核文件解密。\n\n[0082]相应地，当比较单元30生成的比较结果为发起人发起的电子签批的类型属于存储器20存储的一预设类型时，处理器50控制传输单元40加密传输所述待签核文件。具体地，处理器50控制通道建立模块41根据所述文件传输路径建立一常规通道，及控制文件加密模块45根据SSH协议、PGP机制、RSA算法或用户口令加密等加密方式对所述待签核文件加密。处理器50控制文件传输模块42根据发起人设置的签核顺序在常规通道传输待签核文件至每一签核人端。当文件传输模块42接收到来自最后一签核人完成签批的加密的已签核文件时，处理器50控制文件解密模块46根据存储器20存储的解密密钥，对所述加密的已签核文件解密。所述解密密钥可以是发起人和签核人之间预约定的口令、密码等。优选地，当文件传输模块42接收到来自最后一签核人完成签批的加密的已签核文件时，处理器50控制通道关闭模块43关闭所述常规通道，从而节约网络资源。\n\n[0083]本发明实施例提供的电子签批安全管理方法及系统，自动识别发起人发起的电子签批的类型，并根据存储的至少一预设类型判断该电子签批的重要性，对属于预设类型的电子签批加密传输，从而避免非法分子对重要信息的窃取，对用户造成不必要的损失。\n\n[0084]本发明实施例所提供的系统，其实现原理及产生的技术效果和前述方法实施例相同，为简要描述，系统实施例部分未提及之处，可参考前述方法实施例中相应内容。\n\n[0085]在这里示出和描述的所有示例中，任何具体值应被解释为仅仅是示例性的，而不是为限制，因此，示例性实施例的其他示例可以具有不同的值。应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。\n\n[0086]在本申请所提供的几个实施例中，应该理解到，所揭露的装置可以通过其它的方式实现。以上所描述的装置实施例仅仅是示意性的，例如，所述单元的划分，仅仅为一种逻辑功能划分，实际实现时可以有另外的划分方式，又例如，多个单元或组件可以结合或者可以集成到另一个系统，或一些特征可以忽略，或不执行。另一点，所显示或讨论的相互之间的耦合或直接耦合或通信连接可以是通过一些通信接口，装置或单元的间接耦合或通信连接，可以是电性，机械或其它的形式。\n\n[0087]所述为分离部件说明的单元可以是或者也可以不是物理上分开的，为单元显示的部件可以是或者也可以不是物理单元，即可以位于一个地方，或者也可以分布到多个网络单元上。可以根据实际的需要选择其中的部分或者全部单元来实现本实施例方案的目的。\n\n[0088]另外，在本发明各个实施例中的各功能单元可以集成在一个处理单元中，也可以是各个单元单独物理存在，也可以两个或两个以上单元集成在一个单元中。\n\n[0089]以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应所述以权利要求的保护范围为准。\n\n', '技术领域\n\n[0001]本发明涉及电子签批技术领域，具体而言，涉及一种电子签批安全管理方法及系统。\n\n背景技术\n\n[0002]对于公司内部签批流程，通常需要将待签批文件打印出来，然后给到各个签批人处进行签批签字盖章。这样的签批流程较为繁琐，工作效率低下。由此，电子签批应运而生。近年来，电子签批在企业流程、行业应用、移动支付和个人信息安全等各种场景中得到越来越多的应用。\n\n[0003]但现有的电子签批大多通过公共网络传输签批文件，缺乏对传输的签批文件的保护机制。对于企业来说，企业的财政开支状况、项目申请及研发文档等都是非常机密的材料，一些不法的竞争者经常通过技术手段窃取机密，使受害者遭受巨大的经济损失。\n\n发明内容\n\n[0004]本发明正是基于上述问题，提出了一种对签批文件具有保护机制的电子签批方法及系统。\n\n[0005]有鉴于此，本发明一方面提出了一种电子签批安全管理方法，包括：\n\n[0006]响应发起人的电子签批请求，获取所述电子签批的类型及待签核文件；\n\n[0007]比较所述电子签批的类型和存储的至少一预设类型；\n\n[0008]当所述电子签批的类型属于任一所述预设类型时，加密所述待签核文件。\n\n[0009]进一步地，还包括：\n\n[0010]响应发起人的电子签批请求，获取发起人设置的至少一签核人的签核顺序；\n\n[0011]根据所述签核顺序，生成文件传输路径。\n\n[0012]进一步地，还包括：\n\n[0013]当所述电子签批的类型不属于任一所述预设类型时，根据所述文件传输路径建立一常规通道；\n\n[0014]在所述常规通道传输所述待签核文件至签核人端；\n\n[0015]当接收到来自签核人端的已签核文件时，关闭所述常规通道。\n\n[0016]进一步地，所述“加密所述待签核文件”包括：\n\n[0017]根据所述文件传输路径建立一常规通道；\n\n[0018]对所述常规通道进行加密，建立一加密通道；\n\n[0019]在所述加密通道传输所述待签核文件至签核人端；\n\n[0020]当接收到来自签核人端的已签核文件时，关闭所述加密通道。\n\n[0021]进一步地，所述“加密所述待签核文件”包括：\n\n[0022]根据所述文件传输路径建立一常规通道；\n\n[0023]对所述待签核文件加密；\n\n[0024]在所述常规通道传输所述加密的待签核文件至签核人端；\n\n[0025]接收来自签核人端的加密的已签核文件，根据存储的发起人和签核人之间关联的解密密钥，对所述加密的已签核文件解密；\n\n[0026]关闭所述常规通道。\n\n[0027]本发明另一方面还提供了一种电子签批安全管理系统，包括获取单元、存储器、比较单元和处理器。\n\n[0028]所述获取单元，用于响应发起人的电子签批请求，获取所述电子签批的类型及待签核文件。\n\n[0029]所述比较单元，用于比较所述电子签批的类型和所述存储器存储的至少一预设类型，生成比较结果。\n\n[0030]所述处理器，用于当所述电子签批的类型属于任一所述预设类型时，加密所述待签核文件。\n\n[0031]进一步地，所述获取单元还用于响应发起人的电子签批请求获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。\n\n[0032]进一步地，还包括传输单元，所述传输单元包括通道建立模块、文件传输模块和通道关闭模块。通道建立模块，用于根据所述文件传输路径建立一常规通道。文件传输模块，用于在所述常规通道发送所述待签核文件至签核人端，及接收来自签核人端的已签核文件。通道关闭模块，用于关闭所述常规通道。\n\n[0033]进一步地，还包括传输单元，所述传输单元包括通道建立模块、加密模块、文件传输模块和通道关闭模块。通道建立模块，用于根据所述文件传输路径建立一常规通道。加密模块，用于对所述常规通道进行加密，建立一加密通道。文件传输模块，用于在所述加密通道发送所述待签核文件至签核人端，及接收来自签核人端的已签核文件。通道关闭模块，用于关闭所述加密通道。\n\n[0034]进一步地，还包括传输单元，所述传输单元包括通道建立模块，加密模块、文件传输模块、解密模块和通道关闭模块。通道建立模块，用于根据所述文件传输路径建立一常规通道。加密模块，用于对所述待签核文件加密。文件传输模块，用于在所述常规通道发送所述加密的待签核文件至签核人端，及接收来自签核人端的加密的已签核文件。解密模块，用于所述存储器存储的发起人和签核人之间关联的解密密钥，对所述加密的已签核文件解密。通道关闭模块，用于关闭所述常规通道。\n\n[0035]本发明实施例提供的电子签批安全管理方法及系统，自动识别发起人发起的电子签批的类型，并根据存储的至少一预设类型判断该电子签批的重要性，对属于预设类型的电子签批加密传输，从而避免非法分子对重要信息的窃取，对用户造成不必要的损失。\n\n[0036]为使本发明的上述目的、特征和优点能更明显易懂，下文特举较佳实施例，并配合所附附图，作详细说明如下。\n\n附图说明\n\n[0037]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0038]图1示出了本发明实施例提供的一种电子签批安全管理方法的第一流程示意图；\n\n[0039]图2示出了本发明实施例提供的一种电子签批安全管理方法的第二流程示意图；\n\n[0040]图3示出了本发明实施例提供的一种电子签批安全管理系统的结构示意图。\n\n[0041]主要元件符号说明：\n\n[0042]100-电子签批安全管理系统；10-获取单元；20-存储器；30-比较单元；40-传输单元；41-通道建立模块；42-文件传输模块；43-通道关闭模块；44-通道加密模块；45-文件加密模块；46-文件解密模块；50-处理器。\n\n具体实施方式\n\n[0043]为了便于理解本发明，下面将参照相关附图对电子签批安全管理方法及系统进行更清楚、完整地描述。附图中给出了电子签批安全管理方法及系统的优选实施例。电子签批安全管理方法及系统可以通过许多不同的形式来实现，并不限于本文所描述的实施例。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0044]实施例1\n\n[0045]图1示出了本发明实施例提供的一种电子签批安全管理方法的流程示意图。如图1所示，本发明实施例提供的电子签批安全管理方法，包括：\n\n[0046]步骤S10，响应发起人的电子签批请求，获取所述电子签批的类型及待签核文件。\n\n[0047]具体地，响应发起人在用户终端的电子签批请求，获取发起人发起的电子签批的类型，以及发起人设置的至少一签核人。所述用户终端可以是手机、电脑等。在注册账户后，用户可以通过安装在用户终端的电子签批软件或用户终端浏览器中的电子签批网页完成电子签批流程。根据待签核事项的重要性或签核人的职位等，发起人可以通过用户终端上的电子签批软件设置所述电子签批为不同类型，如发起人选定的职位最高的签核人为董事长，则设置该电子签批为类型A；发起人发起的电子签批涉及商业秘密，则设置该电子签批为类型B等。\n\n[0048]进一步地，响应发起人在用户终端的电子签批请求，获取发起人通过移动网络或无线网络上传的待签核文件。所述待签核文件是指合同、请假条、样品申请单等需要至少一签核人签字的文件。\n\n[0049]进一步地，响应发起人的电子签批请求，获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。根据获取的签核顺序，生成对应的文件传输路径。所述文件传输路径是指待签核文件在不同传输节点间的流转路径。例如，一电子签批的签核顺序为物料部经理、财务部经理、研发部经理，则对应的文件传输路径为发起人端、物料部经理端、品质部经理端、研发部经理端、发起人端。\n\n[0050]步骤S20，比较所述电子签批的类型和存储的至少一预设类型，生成比较结果。\n\n[0051]具体地，获取服务器端存储的至少一预设类型。所述预设类型为区分待签核文件重要性的标准。比较发起人发起的电子签批的类型和所述预设类型，生成比较结果。当所述电子签批的类型不属于任一所述预设类型时，表示待签核文件重要性弱，对保密工作不做要求等；但当所述电子签批的类型属于一所述预设类型时，表示待签核文件重要性强，需要保密签核等。\n\n[0052]步骤S30，当所述电子签批的类型属于任一所述预设类型时，加密所述待签核文件。\n\n[0053]具体地，当所述比较结果为发起人发起的电子签批的类型不属于任一所述预设类型时，常规传输所述待签核文件。根据所述文件传输路径建立一常规通道。所述常规通道为不做加密、加扰等预处理的信号传输通道。根据发起人设置的签核顺序在常规通道传输待签核文件至每一签核人端。优选地，当接收到来自最后一签核人完成签批的已签核文件时，关闭所述常规通道，从而节约网络资源。\n\n[0054]进一步地，当所述比较结果为发起人发起的电子签批的类型属于一所述预设类型时，加密传输所述待签核文件。具体地，根据所述文件传输路径建立一常规通道。根据HTTPS协议(Hyper Text Transfer Protocol over Secure Socket Layer，基于SSL的超文本传输协议)、SSL协议(Secure Sockets Layer，安全套接层)、CA认证(CertificateAuthority，认证授权)、VPN(Virtual Private Network，虚拟专用网)或RAR压缩加密等加密方式对所述常规通道加密，从而建立一加密通道，确保信息的安全性。根据发起人设置的签核顺序在加密通道传输待签核文件至每一签核人端。优选地，当接收到来自最后一签核人完成签批的已签核文件时，关闭所述加密通道，从而节约网络资源。\n\n[0055]实施例2\n\n[0056]图2示出了本发明实施例提供的一种电子签批安全管理方法的流程示意图。如图2所示，本发明实施例提供的电子签批安全管理方法，包括：\n\n[0057]步骤S1，响应发起人的电子签批请求，获取所述电子签批的类型及待签核文件。\n\n[0058]具体地，响应发起人在用户终端的电子签批请求，获取发起人发起的电子签批的类型，发起人设置的至少一签核人以及发起人通过移动网络或无线网络上传的待签核文件。所述用户终端可以是手机、电脑等。在注册账户后，用户可以通过安装在用户终端的电子签批软件或用户终端浏览器中的电子签批网页完成电子签批流程。\n\n[0059]步骤S2，响应发起人的电子签批请求，获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。\n\n[0060]需要说明的是，步骤S1和步骤S2的执行不分先后顺序。\n\n[0061]具体地，响应发起人的电子签批请求，获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。根据获取的签核顺序，生成对应的文件传输路径。\n\n[0062]步骤S3，比较所述电子签批的类型和存储的至少一预设类型，当所述电子签批的类型不属于任一所述预设类型时，执行步骤S4；当所述电子签批的类型属于所述预设类型时，执行步骤S5。\n\n[0063]具体地，获取服务器端存储的至少一预设类型。所述预设类型为区分待签核文件重要性的标准。比较发起人发起的电子签批的类型和所述预设类型。当所述电子签批的类型不属于任一所述预设类型时，表示待签核文件重要性弱，对保密工作不做要求等，执行步骤S4；当所述电子签批的类型属于所述预设类型时，表示待签核文件重要性强，需要保密签核等，执行步骤S5。\n\n[0064]步骤S4，常规传输所述待签核文件。\n\n[0065]具体地，当发起人发起的电子签批的类型不属于任一所述预设类型时，常规传输所述待签核文件。根据所述文件传输路径建立一常规通道。根据发起人设置的签核顺序在常规通道传输待签核文件至每一签核人端。优选地，当接收到来自最后一签核人完成签批的已签核文件时，关闭所述常规通道，从而节约网络资源。\n\n[0066]步骤S5，加密传输所述待签核文件。\n\n[0067]具体地，当发起人发起的电子签批的类型属于所述预设类型时，加密传输所述待签核文件。本实施例中，加密传输所述待签核文件包括两种实施方式。一种实施方式为建立一加密通道，及在该加密通道传输所述待签核文件。具体地，根据所述文件传输路径建立一常规通道。根据HTTPS协议、SSL协议、CA认证、VPN或RAR压缩加密等加密方式对所述常规通道加密，从而建立一加密通道。根据发起人设置的签核顺序在加密通道传输待签核文件至每一签核人端。优选地，当接收到来自最后一签核人完成签批的已签核文件时，关闭所述加密通道，从而节约网络资源。\n\n[0068]另一种实施方式为建立一常规通道，对所述待签核文件加密，及在所述常规通道传输所述加密的待签核文件。具体地，根据所述文件传输路径建立一常规通道。根据SSH协议(SecureShell，安全外壳协议)、PGP协议(Pretty Good Privacy，安全加密)、RSA(非对称加密算法)或用户口令加密等加密方式对所述待签核文件加密。根据发起人设置的签核顺序在常规通道传输待签核文件至每一签核人端。当接收到来自最后一签核人完成签批的加密的已签核文件时，根据存储的解密密钥，对所述加密的已签核文件解密。所述解密密钥可以是发起人和签核人之间预先约定的口令、密码等。优选地，当接收到来自最后一签核人完成签批的加密的已签核文件时，关闭所述常规通道，从而节约网络资源。这种方式对传输通道要求比较低，且文件加密技术相比通道加密技术更容易实现。\n\n[0069]实施例3\n\n[0070]图3示出了本发明实施例提供的一种电子签批安全管理系统的结构示意图。如图3所示，本发明实施例提供的一种电子签批安全管理系统100，包括获取单元10、存储器20、比较单元30、传输单元40和处理器50。获取单元10、存储器20、比较单元30和传输单元40均与处理器50通信连接。\n\n[0071]获取单元10用于响应发起人的电子签批请求，获取所述电子签批的类型及待签核文件，获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。\n\n[0072]具体地，根据待签核事项的重要性或签核人的职位等，发起人可以通过用户终端上的电子签批软件设置所述电子签批为不同类型。处理器50控制获取单元10响应发起人的电子签批请求，获取发起人发起的电子签批的类型。同时，处理器50控制获取单元10获取发起人通过移动网络或无线网络上传的待签核文件。所述待签核文件是指合同、请假条、样品申请单等需要至少一签核人签字的文件。进一步地，在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。处理器50控制获取单元10获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。所述文件传输路径是指待签核文件在不同传输节点间的流转路径。\n\n[0073]存储器20用于存储至少一预设类型。所述预设类型为区分待签核文件重要性的标准，如涉及商业秘密等的待签核文件的类型为一预设类型。\n\n[0074]比较单元30用于比较发起人发起的电子签批的类型和所述预设类型，生成比较结果。\n\n[0075]传输单元40用于传输所述待签核文件。\n\n[0076]本实施例中，传输单元40包括通道建立模块41、文件传输模块42和通道关闭模块43。通道建立模块41用于根据所述文件传输路径建立一常规通道。文件传输模块42用于在所述常规通道发送所述待签核文件至签核人端，及接收来自签核人端的已签核文件。通道关闭模块43用于关闭所述常规通道。\n\n[0077]进一步地，传输单元40还包括通道加密模块44。通道加密模块44用于对所述常规通道进行加密及安全认证，建立一加密通道。文件传输模块42还用于在所述加密通道发送所述待签核文件至签核人端，及接收来自签核人端的已签核文件。通道关闭模块43还用于关闭所述加密通道。\n\n[0078]处理器50用于根据所述比较结果控制传输单元40加密传输或常规传输所述待签核文件。\n\n[0079]当比较单元30生成的比较结果为发起人发起的电子签批的类型不属于存储器20存储的任一预设类型时，处理器50控制传输单元40常规传输所述待签核文件。具体地，处理器50控制通道建立模块41根据所述文件传输路径建立一常规通道，及控制文件传输模块42根据发起人设置的签核顺序在常规通道传输待签核文件至每一签核人端。优选地，当文件传输模块42接收到来自最后一签核人完成签批的已签核文件时，处理器50控制通道关闭模块43关闭所述常规通道，从而节约网络资源。\n\n[0080]当比较单元30生成的比较结果为发起人发起的电子签批的类型属于存储器20存储的一预设类型时，处理器50控制传输单元40加密传输所述待签核文件。具体地，处理器50控制通道建立模块41根据所述文件传输路径建立一常规通道，及控制通道加密模块44根据HTTPS协议、SSL协议、CA认证、VPN或RAR压缩加密等加密方式对所述常规通道加密，从而建立一加密通道。处理器50控制文件传输模块42根据发起人设置的签核顺序在加密通道传输待签核文件至每一签核人端。优选地，当文件传输模块42接收到来自最后一签核人完成签批的已签核文件时，处理器50控制通道关闭模块43关闭所述加密通道，从而节约网络资源。\n\n[0081]另一实施例中，传输单元40还包括文件加密模块45和文件解密模块46。文件加密模块45用于对所述待签核文件加密。文件传输模块42还用于在所述常规通道发送所述加密的待签核文件至签核人端，及接收来自签核人端的加密的已签核文件。文件解密模块46用于所述存储器存储的发起人和签核人之间关联的解密密钥，对所述加密的已签核文件解密。\n\n[0082]相应地，当比较单元30生成的比较结果为发起人发起的电子签批的类型属于存储器20存储的一预设类型时，处理器50控制传输单元40加密传输所述待签核文件。具体地，处理器50控制通道建立模块41根据所述文件传输路径建立一常规通道，及控制文件加密模块45根据SSH协议、PGP机制、RSA算法或用户口令加密等加密方式对所述待签核文件加密。处理器50控制文件传输模块42根据发起人设置的签核顺序在常规通道传输待签核文件至每一签核人端。当文件传输模块42接收到来自最后一签核人完成签批的加密的已签核文件时，处理器50控制文件解密模块46根据存储器20存储的解密密钥，对所述加密的已签核文件解密。所述解密密钥可以是发起人和签核人之间预约定的口令、密码等。优选地，当文件传输模块42接收到来自最后一签核人完成签批的加密的已签核文件时，处理器50控制通道关闭模块43关闭所述常规通道，从而节约网络资源。\n\n[0083]本发明实施例提供的电子签批安全管理方法及系统，自动识别发起人发起的电子签批的类型，并根据存储的至少一预设类型判断该电子签批的重要性，对属于预设类型的电子签批加密传输，从而避免非法分子对重要信息的窃取，对用户造成不必要的损失。\n\n[0084]本发明实施例所提供的系统，其实现原理及产生的技术效果和前述方法实施例相同，为简要描述，系统实施例部分未提及之处，可参考前述方法实施例中相应内容。\n\n[0085]在这里示出和描述的所有示例中，任何具体值应被解释为仅仅是示例性的，而不是为限制，因此，示例性实施例的其他示例可以具有不同的值。应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。\n\n[0086]在本申请所提供的几个实施例中，应该理解到，所揭露的装置可以通过其它的方式实现。以上所描述的装置实施例仅仅是示意性的，例如，所述单元的划分，仅仅为一种逻辑功能划分，实际实现时可以有另外的划分方式，又例如，多个单元或组件可以结合或者可以集成到另一个系统，或一些特征可以忽略，或不执行。另一点，所显示或讨论的相互之间的耦合或直接耦合或通信连接可以是通过一些通信接口，装置或单元的间接耦合或通信连接，可以是电性，机械或其它的形式。\n\n[0087]所述为分离部件说明的单元可以是或者也可以不是物理上分开的，为单元显示的部件可以是或者也可以不是物理单元，即可以位于一个地方，或者也可以分布到多个网络单元上。可以根据实际的需要选择其中的部分或者全部单元来实现本实施例方案的目的。\n\n[0088]另外，在本发明各个实施例中的各功能单元可以集成在一个处理单元中，也可以是各个单元单独物理存在，也可以两个或两个以上单元集成在一个单元中。\n\n[0089]以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应所述以权利要求的保护范围为准。\n\n');
INSERT INTO `os_patent_instruction_text` VALUES (11135, 24073, '技术领域\n\n[0001]本发明涉及电子签批技术领域，具体而言，涉及一种电子签批验证方法及系统。\n\n背景技术\n\n[0002]对于公司内部签批流程，通常需要将待签批文件打印出来，然后给到各个签批人处进行签批签字盖章。这样的签批流程较为繁琐，工作效率低下。由此，电子签批应运而生。近年来，电子签批在企业流程、行业应用、移动支付和个人信息安全等各种场景中得到越来越多的应用。\n\n[0003]但现有的电子签批大多通过公共网络传输签批文件，缺乏对传输的签批文件的保护机制。对于企业来说，企业的财政开支状况、项目申请及研发文档等都是非常机密的材料，一些不法的竞争者经常通过技术手段窃取机密，甚至以签核人身份对签核文件进行签核操作，而其他签核人对这种行为无法识别，从而使用户遭受巨大的经济损失。\n\n发明内容\n\n[0004]本发明正是基于上述问题，提出了一种可以对电子签批的签核过程进行验证的电子签批验证方法及系统。\n\n[0005]有鉴于此，本发明一方面提出了一种电子签批验证方法，包括：\n\n[0006]获取当前签核人对其接收到的签核文件的签核信息，生成对应的第一验证码和第二验证码；\n\n[0007]响应发起人或下一顺序签核人对所述第一验证码及所述第二验证码的验证操作，获取所述第一验证码和所述第二验证码分别对应的签核信息；\n\n[0008]当所述第一验证码和所述第二验证码分别对应的签核信息不一致时，响应所述下一顺序签核人的拒绝签核请求，或响应所述发起人的重新签核请求；\n\n[0009]当所述第一验证码和所述第二验证码分别对应的签核信息一致时，根据所述发起人或所述下一顺序签核人对其接收到的签核文件的签核信息和所述第一验证码或所述第二验证码对应的签核信息的比较结果，响应所述下一顺序签核人的签核请求或拒绝签核请求，或响应所述发起人的重新签核请求。\n\n[0010]进一步地，所述“响应发起人或下一顺序签核人对所述第一验证码及所述第二验证码的验证操作，获取服务器端存储的所述第一验证码和所述第二验证码分别对应的签核信息”包括：\n\n[0011]获取及根据所述发起人设置的所述电子签批的至少一签核人的签核顺序，检测是否存在所述下一顺序签核人；\n\n[0012]当不存在所述下一顺序签核人时，响应所述发起人对所述第一验证码及所述第二验证码的验证操作，获取及比较服务器端存储的所述第一验证码和所述第二验证码分别对应的签核信息；\n\n[0013]当存在所述下一顺序签核人时，响应所述下一顺序签核人对所述第一验证码及所述第二验证码的验证操作，获取及比较服务器端存储的所述第一验证码和所述第二验证码分别对应的签核信息。\n\n[0014]进一步地，所述“根据所述发起人或所述下一顺序签核人对其接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息的比较结果，响应所述下一顺序签核人的签核请求或拒绝签核请求，或响应所述发起人的重新签核请求”包括：\n\n[0015]当所述比较结果为所述下一顺序签核人接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息匹配时，响应所述下一顺序签核人的签核请求；\n\n[0016]当所述比较结果为所述下一顺序签核人接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息不匹配时，响应所述下一顺序签核人的拒绝签核请求；\n\n[0017]当所述比较结果为所述发起人接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息不匹配时，响应所述发起人的重新签核请求。\n\n[0018]进一步地，所述“响应所述下一顺序签核人的签核请求”包括：\n\n[0019]获取所述下一顺序签核人对其接收到的签核文件的签核信息，循环执行所述电子签批验证方法。\n\n[0020]进一步地，步骤“响应所述下一顺序签核人的拒绝签核请求”包括：\n\n[0021]获取所述下一顺序签核人输入的拒绝签核信息；\n\n[0022]发送所述下一顺序签核人接收到的签核文件及所述拒绝签核信息至所述当前签核人端，循环执行所述电子签批验证方法。\n\n[0023]进一步地，所述“响应所述发起人的重新签核请求”包括：\n\n[0024]获取所述发起人输入的重新签核信息；\n\n[0025]发送所述发起人接收到的签核文件及所述重新签核信息至最后顺序签核人端，循环执行所述电子签批验证方法。\n\n[0026]本发明另一方面还提供了一种电子签批验证系统，包括生成单元、获取单元、服务器、执行单元和处理器。\n\n[0027]所述生成单元，用于获取当前签核人对其接收到的签核文件的签核信息，生成对应的第一验证码和第二验证码。\n\n[0028]所述获取单元，用于响应发起人或下一顺序签核人对所述第一验证码及所述第二验证码的验证操作，获取所述第一验证码及所述第二验证码对应的签核信息。\n\n[0029]所述处理器，用于根据所述发起人或所述下一顺序签核人对所述第一验证码及所述第二验证码对应的签核信息的比较结果，及对其接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息的比较结果，控制所述执行单元响应所述下一顺序签核人的签核请求或拒绝签核请求，或响应所述发起人的重新签核请求。\n\n[0030]进一步地，所述获取单元包括检测模块和获取模块。\n\n[0031]所述检测模块，用于获取及根据所述发起人设置的所述电子签批的至少一签核人的签核顺序，检测是否存在所述下一顺序签核人。\n\n[0032]所述处理器，还用于当不存在所述下一顺序签核人时，控制所述获取模块响应所述发起人对所述第一验证码及所述第二验证码的扫描操作，获取所述服务器端存储的所述第一验证码及所述第二验证码对应的签核信息；当存在所述下一顺序签核人时，控制所述获取模块响应所述下一顺序签核人对所述第一验证码及所述第二验证码的扫描操作，获取所述服务器端存储的所述第一验证码及所述第二验证码对应的签核信息。\n\n[0033]进一步地，所述执行单元包括获取模块和反馈模块。\n\n[0034]所述获取模块，用于获取所述下一顺序签核人输入的拒绝签核信息，或对其接收到的签核文件的签核信息。\n\n[0035]所述反馈模块，用于发送所述下一顺序签核人接收到的签核文件及所述拒绝签核信息至所述当前签核人端。\n\n[0036]进一步地，所述执行单元包括获取模块和反馈模块。\n\n[0037]所述获取模块，用于获取所述发起人输入的重新签核信息。\n\n[0038]所述反馈模块，用于发送所述发起人接收到的签核文件及所述重新签核信息至最后顺序签核人端。\n\n[0039]本发明实施例提供的电子签批验证方法及系统，根据签核人对签核文件的签核信息，自动生成对应的第一验证码和第二验证码，帮助下一顺序签核人或发起人识别第一验证码或第二验证码的真伪，及识别其接收到的签核文件上签核信息的真伪，对电子签批的签核过程进行验证，从而保证电子签批的有效性，有效避免非法分子对签核文件的假冒签核，对用户造成不必要的损失。\n\n[0040]为使本发明的上述目的、特征和优点能更明显易懂，下文特举较佳实施例，并配合所附附图，作详细说明如下。\n\n附图说明\n\n[0041]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0042]图1示出了本发明实施例提供的一种电子签批验证方法的第一流程示意图；\n\n[0043]图2示出了本发明实施例提供的一种电子签批验证方法的第二流程示意图；\n\n[0044]图3示出了本发明实施例提供的一种电子签批验证系统的结构示意图。\n\n[0045]主要元件符号说明：\n\n[0046]100-电子签批验证系统；10-生成单元；20-获取单元；21-检测模块；22-第一获取模块；30-执行单元；31-第二获取模块；32-反馈模块；40-处理器；50-服务器。\n\n具体实施方式\n\n[0047]为了便于理解本发明，下面将参照相关附图对电子签批验证方法及系统进行更清楚、完整地描述。附图中给出了电子签批验证方法及系统的优选实施例。电子签批验证方法及系统可以通过许多不同的形式来实现，并不限于本文所描述的实施例。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0048]实施例1\n\n[0049]图1示出了本发明实施例提供的一种电子签批验证方法的流程示意图。如图1所示，本发明实施例提供的电子签批验证方法，包括：\n\n[0050]步骤S10，获取当前签核人对其接收到的签核文件的签核信息，生成对应的第一验证码和第二验证码。\n\n[0051]具体地，在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。所述当前签核人可以为任一顺序签核人。响应所述当前签核人对其接收到的签核文件的签核请求，获取及显示发起人、上一顺序签核人或其他人通过移动网络或无线网络上传的签核文件。所述签核文件是指合同、请假条、样品申请、财务报销等需要至少一签核人签字的文件。\n\n[0052]需要说明的是，来自上一顺序签核人的签核文件包括所述上一顺序签核人和/或相对所述上一顺序签核人更靠前顺序签核人的签核信息，换句话说，来自所述签核顺序签核人的签核文件包括发起人设置的至少一签核人中部分签核人的签核信息。例如，一电子签批的签核顺序为研发部经理、物料部经理、财务部经理、董事长，假设当前签核人为财务部经理，则上一顺序签核人为物料部经理，下一顺序签核人为董事长。财务部经理接收到的签核文件包括物料部经理和/或研发部经理的签核信息。发起人接收来自最后顺序签核人的签核文件，本举例中，发起人接收来自董事长的签核文件。\n\n[0053]进一步地，获取所述当前签核人在其接收到的签核文件上输入的签核信息，生成与所述签核信息对应的第一验证码和第二验证码。所述签核信息包括签核人姓名、签核时间、签核终端识别码或签核终端IP地址等。所述第一验证码和所述第二验证码可以是二维码、条形码等。本实施例中，同时生成两个验证码，两个验证码之间的比照可以帮助发起人及任一签核人识别验证码的真伪，从而防止对签核文件的签核信息的伪造。\n\n[0054]步骤S20，响应发起人或下一顺序签核人对所述第一验证码及所述第二验证码的验证操作，获取所述第一验证码和所述第二验证码分别对应的签核信息。\n\n[0055]具体地，所述第一验证码和所述第二验证码用于帮助下一顺序签核人或发起人识别其接收到的签核文件上签核信息的真伪，从而保证电子签批的有效性。由于发起人接收到的签核文件并非一定是来自发起人设置的最后顺序签核人，下一顺序签核人接收到的签核文件也并非一定是来自发起人设置的当前顺序签核人，也有可能是来自任一第三方假冒签核的签核文件。例如，所述签核文件为一项财务报销，可以理解的是，通常，公司规定超过一定额度的财务报销必需由A级及其以上经理签核，如果所述第三方为了进行财务虚假报销，如增加非报销内容等，必须得到A级别及其以上经理的认可。此时，所述第三方可能以所述当前签核人的身份对签核文件假冒签核并将假冒签核的签核文件发送至下一顺序签核人或发起人端。\n\n[0056]本实施例提供的电子签批验证方法，发起人及电子签批的任一签核人对其接收到的签核文件上的签核信息进行验证，从而对电子签批签核过程的每一环节进行验证，可以有效防止电子签批的签核信息的伪造。具体地，获取所述发起人设置的所述电子签批的至少一签核人的签核顺序。根据发起人设置的该电子签批的至少一签核人的签核顺序，检测是否存在下一顺序签核人。\n\n[0057]进一步地，当存在所述下一顺序签核人时，响应所述下一顺序签核人对所述第一验证码及所述第二验证码的验证操作，获取服务器端存储的所述第一验证码和所述第二验证码分别对应的签核信息。当不存在所述下一顺序签核人时，表示发起人设置的至少一签核人均完成对签核文件的签核，换句话说，最后顺序签核人完成对签核文件签核，响应所述发起人对所述第一验证码及所述第二验证码的验证操作，获取服务器端存储的所述第一验证码和所述第二验证码分别对应的签核信息。\n\n[0058]进一步地，根据发起人或下一顺序签核人对所述第一验证码和所述第二验证码分别对应的签核信息的比较结果，执行预设操作。具体地，当所述第一验证码和所述第二验证码分别对应的签核信息不一致时，执行步骤S30；当所述第一验证码和所述第二验证码分别对应的签核信息一致时，执行步骤S40。\n\n[0059]步骤S30，当所述第一验证码和所述第二验证码分别对应的签核信息不一致时，响应所述下一顺序签核人的拒绝签核请求，或响应所述发起人的重新签核请求。\n\n[0060]具体地，响应发起人或下一顺序签核人对所述第一验证码及所述第二验证码的扫描或输入等操作，获取服务器端存储的所述第一验证码和所述第二验证码分别对应的签核信息。当无法获取第一验证码或第二验证码任一对应签核信息，或获取的第一验证码和第二验证码分别对应的签核信息不一致时，表示第一验证码和/或第二验证码存在伪造风险，发起人或下一顺序签核人反馈接收到签核文件至当前签核人重新签核，从而确保电子签批的有效性。\n\n[0061]进一步地，响应发起人的重新签核请求，获取发起人输入或选定的重新签核信息。所述重新签核信息包括重新签核原因，如第一验证码和/或第二验证码存在伪造风险等。反馈所述重新签核信息至最后顺序签核人端，同时，发送发起人接收到的来自最后顺序签核人端的签核文件至最后顺序签核人端，从而最后顺序签核人对签核文件重新签核。执行步骤S10，即循环执行所述电子签批验证方法。本实施例中，最后顺序签核人对签核文件重新签核信息自动覆盖原始签核信息。\n\n[0062]进一步地，响应下一顺序签核人的拒绝签核请求，获取所述下一顺序签核人输入的拒绝签核信息。所述拒绝签核信息包括拒绝签核原因，如第一验证码和/或第二验证码存在伪造风险等。反馈所述拒绝签核信息至当前签核人端，同时，发送下一顺序签核人接收到来自当前签核人的签核文件至当前签核人端，从而当前签核人对签核文件重新签核。执行步骤S10，即循环执行所述电子签批验证方法。\n\n[0063]本发明提供的电子签批验证方法，首先判断验证码的真伪，当第一验证码和/或第二验证码存在伪造风险时，下一顺序签核人直接拒绝签核，或发起人直接发回签核文件至最后顺序签核人重新签核，无需检验签核信息的真伪。\n\n[0064]步骤S40，当所述第一验证码和所述第二验证码分别对应的签核信息一致时，根据所述发起人或所述下一顺序签核人对其接收到的签核文件的签核信息和所述第一验证码或所述第二验证码对应的签核信息的比较结果，响应所述下一顺序签核人的签核请求或拒绝签核请求，或响应所述发起人的重新签核请求。\n\n[0065]具体地，只有当所述第一验证码和所述第二验证码分别对应的签核信息一致时，表示所述第一验证码和所述第二验证码不存在伪造风险，才有必要进一步地判断签核文件上签核信息的真伪。\n\n[0066]进一步地，当所述比较结果为发起人接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息不匹配时，响应发起人的重新签核请求，获取发起人输入或选定的重新签核信息。所述匹配是指签核文件的签核人姓名、签核时间、签核终端识别码等均和所述第一验证码或第二验证码对应的签核信息一致。所述重新签核信息包括重新签核原因，如签核信息存在伪造风险等。反馈所述重新签核信息至最后顺序签核人端，同时，发送发起人接收到的来自最后顺序签核人端的签核文件至最后顺序签核人端，从而最后顺序签核人对签核文件重新签核，确保电子签批的有效性。执行步骤S10，即循环执行所述电子签批验证方法。本实施例中，最后顺序签核人对签核文件重新签核信息自动覆盖原始签核信息。\n\n[0067]进一步地，当所述比较结果为发起人接收到的签核文件的签核信息和所述第一验证码及第二验证码对应的签核信息匹配时，所述电子签批验证方法结束。\n\n[0068]进一步地，当所述比较结果为所述下一顺序签核人接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息匹配时，表示下一顺序签核文件接收到的签核文件来自当前签核人，而非第三方，签核文件的签核信息有效，可以对签核文件继续签核。响应下一顺序签核人的签核请求，获取下一顺序签核人对其接收到的签核文件的签核信息。执行步骤S10，即循环执行所述电子签批验证方法。\n\n[0069]进一步地，当所述比较结果为所述下一顺序签核人接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息不匹配时，表示下一顺序签核人接收到的签核文件的签核信息存在伪造风险，需要反馈至当前签核人重新签核，从而确保电子签批的有效性。响应下一顺序签核人的拒绝签核请求，获取所述下一顺序签核人输入的拒绝签核信息。所述拒绝签核信息包括拒绝签核原因，如签核信息存在伪造风险等。反馈所述拒绝签核信息至当前签核人端，同时，发送下一顺序签核人接收到来自当前签核人的签核文件至当前签核人端，从而当前签核人对签核文件重新签核，确保电子签批的有效性。执行步骤S10，即循环执行所述电子签批验证方法。\n\n[0070]进一步地，循环执行所述电子签批验证方法，发起人及电子签批的任一签核人对其接收到的签核文件上的签核信息进行验证，验证失败的签核文件直接反馈至上一顺序签核人端重新签核，从而电子签批签核过程的每一环节进行验证，可以有效防止电子签批的签核信息的伪造。\n\n[0071]实施例2\n\n[0072]图2示出了本发明实施例提供的一种电子签批验证方法的流程示意图。如图2所示，本发明实施例提供的电子签批验证方法，包括：\n\n[0073]步骤S1，获取当前签核人对其接收到的签核文件的签核信息，生成对应的第一验证码和第二验证码。\n\n[0074]其中，步骤S1和步骤S10内容相同。\n\n[0075]步骤S2，获取及根据所述发起人设置的所述电子签批的至少一签核人的签核顺序，检测是否存在所述下一顺序签核人，当不存在所述下一顺序签核人时，执行步骤S31；当存在所述下一顺序签核人时，执行步骤S41。\n\n[0076]具体地，在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。根据发起人设置的该电子签批的至少一签核人的签核顺序，检测是否存在下一顺序签核人。\n\n[0077]步骤S31，当不存在所述下一顺序签核人时，响应所述发起人对所述第一验证码及所述第二验证码的验证操作，获取服务器端存储的所述第一验证码和所述第二验证码分别对应的签核信息。\n\n[0078]具体地，当不存在所述下一顺序签核人时，表示发起人设置的至少一签核人均完成对签核文件的签核，换句话说，最后顺序签核人完成对签核文件签核。发起人接收来自最后顺序签核人的签核文件。响应所述发起人对所述第一验证码及所述第二验证码的验证操作，获取服务器端存储的所述第一验证码和所述第二验证码分别对应的签核信息。发起人通过比较第一验证码及第二验证码分别对应的签核信息对其真伪进行识别。\n\n[0079]步骤S32，当所述第一验证码和所述第二验证码分别对应的签核信息不一致时，响应所述发起人的重新签核请求。\n\n[0080]具体地，当发起人无法获取第一验证码或第二验证码任一对应签核信息，或获取的第一验证码和第二验证码分别对应的签核信息不一致时，表示第一验证码和/或第二验证码存在伪造风险。响应发起人的重新签核请求，获取发起人输入或选定的重新签核信息。所述重新签核信息包括重新签核原因，如第一验证码和/或第二验证码存在伪造风险等。反馈所述重新签核信息至最后顺序签核人端，同时，发送发起人接收到的来自最后顺序签核人端的签核文件至最后顺序签核人端，从而最后顺序签核人对签核文件重新签核。执行步骤S1，即循环执行所述电子签批验证方法。本实施例中，最后顺序签核人对签核文件重新签核信息自动覆盖原始签核信息。\n\n[0081]步骤S33，当所述第一验证码和所述第二验证码分别对应的签核信息一致时，根据所述发起人对其接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息的比较结果，响应所述发起人的重新签核请求。\n\n[0082]具体地，当所述比较结果为发起人接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息不匹配时，响应所述发起人的重新签核请求，获取发起人输入或选定的重新签核信息。反馈所述重新签核信息至最后顺序签核人端，同时，发送发起人接收到的来自最后顺序签核人端的签核文件至最后顺序签核人端，从而最后顺序签核人对签核文件重新签核，确保电子签批的有效性。执行步骤S1，即循环执行所述电子签批验证方法。\n\n[0083]进一步地，当所述比较结果为发起人接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息匹配时，所述电子签批验证方法结束。\n\n[0084]步骤S41，当存在所述下一顺序签核人时，响应下一顺序签核人对所述第一验证码及所述第二验证码的验证操作，获取服务器端存储的所述第一验证码和所述第二验证码分别对应的签核信息。\n\n[0085]具体地，响应所述下一顺序签核人对所述第一验证码及所述第二验证码的验证操作，获取服务器端存储的所述第一验证码和所述第二验证码分别对应的签核信息。下一顺序签核人通过比较第一验证码及第二验证码分别对应的签核信息对其真伪进行识别。\n\n[0086]步骤S42，当所述第一验证码和所述第二验证码分别对应的签核信息不一致时，响应所述下一顺序签核人的拒绝签核请求。\n\n[0087]具体地，当下一顺序签核人无法获取第一验证码或第二验证码任一对应签核信息，或获取的第一验证码和第二验证码分别对应的签核信息不一致时，表示第一验证码和/或第二验证码存在伪造风险。响应下一顺序签核人的拒绝签核请求，获取所述下一顺序签核人输入的拒绝签核信息。所述拒绝签核信息包括拒绝签核原因，如第一验证码和/或第二验证码存在伪造风险等。反馈所述拒绝签核信息至当前签核人端，同时，发送下一顺序签核人接收到来自当前签核人的签核文件至当前签核人端，从而当前签核人对签核文件重新签核。执行步骤S1，即循环执行所述电子签批验证方法。\n\n[0088]步骤S43，当所述第一验证码和所述第二验证码分别对应的签核信息一致时，根据所述下一顺序签核人对其接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息的比较结果，响应所述下一顺序签核人的签核请求或拒绝签核请求。\n\n[0089]具体地，当所述比较结果为所述下一顺序签核人接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息匹配时，表示下一顺序签核文件接收到的签核文件来自当前签核人，而非第三方，签核文件的签核信息有效，可以对签核文件继续签核。响应下一顺序签核人的签核请求，获取下一顺序签核人对其接收到的签核文件的签核信息。执行步骤S1，即循环执行所述电子签批验证方法。\n\n[0090]进一步地，当所述比较结果为所述下一顺序签核人接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息不匹配时，表示下一顺序签核人接收到的签核文件的签核信息存在伪造风险，需要反馈至当前签核人重新签核。响应下一顺序签核人的拒绝签核请求，获取所述下一顺序签核人输入的拒绝签核信息。所述拒绝签核信息包括拒绝签核原因，如签核信息存在伪造风险等。反馈所述拒绝签核信息至当前签核人端，同时，发送下一顺序签核人接收到来自当前签核人的签核文件至当前签核人端，从而当前签核人对签核文件重新签核，确保电子签批的有效性。执行步骤S1，即循环执行所述电子签批验证方法。\n\n[0091]实施例3\n\n[0092]图3示出了本发明实施例提供的一种电子签批验证系统的结构示意图。如图3所示，本发明实施例提供的一种电子签批验证系统100，包括生成单元10、获取单元20、执行单元30、处理器40和服务器50。生成单元10、获取单元20和执行单元30均与处理器40电性连接。服务器50通过移动网络或无线网络等与处理器40通信连接。\n\n[0093]生成单元10用于获取当前签核人对其接收到的签核文件的签核信息，生成对应的第一验证码和第二验证码。\n\n[0094]具体地，在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。所述当前签核人可以为任一顺序签核人。处理器40响应当前签核人对其接收到的签核文件的签核请求，获取及显示发起人、上一顺序签核人或其他人通过移动网络或无线网络上传的签核文件。所述签核文件是指合同、请假条、样品申请、财务报销等需要至少一签核人签字的文件。\n\n[0095]进一步地，处理器40控制生成单元10获取所述当前签核人在其接收到的签核文件上输入的签核信息，生成与所述签核信息对应的第一验证码和第二验证码。所述签核信息包括签核人姓名、签核时间、签核终端识别码或签核终端IP地址等。所述第一验证码和所述第二验证码可以是二维码、条形码等。本实施例中，同时生成两个验证码，两个验证码之间的比照可以帮助发起人及任一签核人识别验证码的真伪，从而防止对签核文件的签核信息的伪造。\n\n[0096]获取单元20用于响应发起人或下一顺序签核人对所述第一验证码及所述第二验证码的验证操作，获取及比较服务器端存储的所述第一验证码和所述第二验证码分别对应的签核信息。本实施例中，获取单元20包括检测模块21和第一获取模块22。\n\n[0097]检测模块21用于获取及根据发起人设置的电子签批的至少一签核人的签核顺序，检测是否存在下一顺序签核人。\n\n[0098]具体地，处理器40控制检测模块21根据发起人设置的该电子签批的至少一签核人的签核顺序，检测是否存在下一顺序签核人。\n\n[0099]第一获取模块22用于获取服务器50端存储的二维码对应的签核信息。\n\n[0100]具体地，当存在所述下一顺序签核人时，处理器40控制第一获取模块22响应所述下一顺序签核人对所述第一验证码及所述第二验证码的验证操作，获取及比较服务器50端存储的所述第一验证码和所述第二验证码分别对应的签核信息。当不存在所述下一顺序签核人时，表示发起人设置的至少一签核人均完成对签核文件的签核，换句话说，最后顺序签核人完成对签核文件签核，响应所述发起人对所述第一验证码及所述第二验证码的验证操作，获取及比较服务器50端存储的所述第一验证码和所述第二验证码分别对应的签核信息。\n\n[0101]执行单元30用于响应下一顺序签核人的签核请求或拒绝签核请求，或响应发起人的重新签核请求。\n\n[0102]具体地，处理器40根据所述发起人或所述下一顺序签核人对所述第一验证码及所述第二验证码对应的签核信息的比较结果，及对其接收到的签核文件的签核信息和二维码对应的签核信息的比较结果，控制执行单元30响应下一顺序签核人的签核请求或拒绝签核请求，或响应发起人的重新签核请求。\n\n[0103]本实施例中，执行单元30包括第二获取模块31和反馈模块32。\n\n[0104]第二获取模块31用于获取下一顺序签核人或发起人输入的信息。\n\n[0105]本实施例中，三种情况下，处理器40控制第二获取模块31响应发起人的重新签核请求，获取发起人输入或选定的重新签核信息。具体地，一种情况为发起人无法获取第一验证码或第二验证码任一对应签核信息；另一种情况为发起人获取的第一验证码和第二验证码分别对应的签核信息不一致；再一种情况为发起人获取的第一验证码和第二验证码分别对应的签核信息一致，但发起人接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息不匹配。所述匹配是指签核文件的签核人姓名、签核时间、签核终端识别码等均和所述第一验证码或第二验证码对应的签核信息一致。所述重新签核信息包括重新签核原因，如验证码存在伪造风险、签核信息存在伪造风险等。\n\n[0106]进一步地，三种情况下，处理器40控制第二获取模块31响应下一顺序签核人的拒绝签核请求，获取下一顺序签核人输入或选定的拒绝签核信息。具体地，一种情况为下一顺序签核人无法获取第一验证码或第二验证码任一对应签核信息；另一种情况为下一顺序签核人获取的第一验证码和第二验证码分别对应的签核信息不一致；再一种情况为下一顺序签核人获取的第一验证码和第二验证码分别对应的签核信息一致，但下一顺序签核人接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息不匹配。所述拒绝签核信息包括拒绝签核原因，如验证码存在伪造风险、签核信息存在伪造风险等。\n\n[0107]进一步地，当下一顺序签核人获取的第一验证码和第二验证码分别对应的签核信息一致，且下一顺序签核人接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息匹配时，表示下一顺序签核文件接收到的签核文件来自当前签核人，而非第三方，签核文件的签核信息有效，可以对签核文件继续签核。处理器40控制第二获取模块31响应下一顺序签核人的签核请求，获取下一顺序签核人对其接收到的签核文件的签核信息。\n\n[0108]反馈模块32用于反馈签核文件和/或其他信息至当前签核人或最后顺序签核人。\n\n[0109]具体地，处理器40控制反馈模块32反馈所述重新签核信息至最后顺序签核人端，同时，控制反馈模块32发送发起人接收到的来自最后顺序签核人端的签核文件至最后顺序签核人端，从而最后顺序签核人对签核文件重新签核，确保电子签批的有效性。本实施例中，最后顺序签核人对签核文件重新签核信息自动覆盖原始签核信息。此时，处理器40控制生成单元10获取最后顺序签核人在所述反馈的签核文件上的签核信息，重新生成对应的第一验证码和第二验证码，从而帮助发起人对其接收到的签核文件上的签核信息重新确认。\n\n[0110]进一步地，处理器40控制反馈模块32反馈所述拒绝签核信息至当前签核人端，同时，控制反馈模块32发送下一顺序签核人接收到来自当前签核人的签核文件至当前签核人端，从而当前签核人对签核文件重新签核，确保电子签批的有效性。同理，处理器40控制生成单元10获取当前签核人在所述反馈的签核文件上的签核信息，重新生成对应的第一验证码和第二验证码。\n\n[0111]本实施例提供的电子签批验证系统100，发起人及电子签批的任一签核人对其接收到的签核文件上的签核信息进行验证，验证失败的签核文件直接反馈至上一顺序签核人端重新签核，从而电子签批签核过程的每一环节进行验证，可以有效防止电子签批的签核信息的伪造。\n\n[0112]本发明实施例提供的电子签批验证方法及系统，根据签核人对签核文件的签核信息，自动生成对应的第一验证码和第二验证码，帮助下一顺序签核人或发起人识别第一验证码或第二验证码的真伪，及识别其接收到的签核文件上签核信息的真伪，对电子签批的签核过程进行验证，从而保证电子签批的有效性，有效避免非法分子对签核文件的假冒签核，对用户造成不必要的损失。\n\n[0113]本发明实施例所提供的系统，其实现原理及产生的技术效果和前述方法实施例相同，为简要描述，系统实施例部分未提及之处，可参考前述方法实施例中相应内容。\n\n[0114]在这里示出和描述的所有示例中，任何具体值应被解释为仅仅是示例性的，而不是为限制，因此，示例性实施例的其他示例可以具有不同的值。应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。\n\n[0115]在本申请所提供的几个实施例中，应该理解到，所揭露的装置可以通过其它的方式实现。以上所描述的装置实施例仅仅是示意性的，例如，所述单元的划分，仅仅为一种逻辑功能划分，实际实现时可以有另外的划分方式，又例如，多个单元或组件可以结合或者可以集成到另一个系统，或一些特征可以忽略，或不执行。另一点，所显示或讨论的相互之间的耦合或直接耦合或通信连接可以是通过一些通信接口，装置或单元的间接耦合或通信连接，可以是电性，机械或其它的形式。\n\n[0116]所述为分离部件说明的单元可以是或者也可以不是物理上分开的，为单元显示的部件可以是或者也可以不是物理单元，即可以位于一个地方，或者也可以分布到多个网络单元上。可以根据实际的需要选择其中的部分或者全部单元来实现本实施例方案的目的。\n\n[0117]另外，在本发明各个实施例中的各功能单元可以集成在一个处理单元中，也可以是各个单元单独物理存在，也可以两个或两个以上单元集成在一个单元中。\n\n[0118]以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应所述以权利要求的保护范围为准。\n\n', '技术领域\n\n[0001]本发明涉及电子签批技术领域，具体而言，涉及一种电子签批验证方法及系统。\n\n背景技术\n\n[0002]对于公司内部签批流程，通常需要将待签批文件打印出来，然后给到各个签批人处进行签批签字盖章。这样的签批流程较为繁琐，工作效率低下。由此，电子签批应运而生。近年来，电子签批在企业流程、行业应用、移动支付和个人信息安全等各种场景中得到越来越多的应用。\n\n[0003]但现有的电子签批大多通过公共网络传输签批文件，缺乏对传输的签批文件的保护机制。对于企业来说，企业的财政开支状况、项目申请及研发文档等都是非常机密的材料，一些不法的竞争者经常通过技术手段窃取机密，甚至以签核人身份对签核文件进行签核操作，而其他签核人对这种行为无法识别，从而使用户遭受巨大的经济损失。\n\n发明内容\n\n[0004]本发明正是基于上述问题，提出了一种可以对电子签批的签核过程进行验证的电子签批验证方法及系统。\n\n[0005]有鉴于此，本发明一方面提出了一种电子签批验证方法，包括：\n\n[0006]获取当前签核人对其接收到的签核文件的签核信息，生成对应的第一验证码和第二验证码；\n\n[0007]响应发起人或下一顺序签核人对所述第一验证码及所述第二验证码的验证操作，获取所述第一验证码和所述第二验证码分别对应的签核信息；\n\n[0008]当所述第一验证码和所述第二验证码分别对应的签核信息不一致时，响应所述下一顺序签核人的拒绝签核请求，或响应所述发起人的重新签核请求；\n\n[0009]当所述第一验证码和所述第二验证码分别对应的签核信息一致时，根据所述发起人或所述下一顺序签核人对其接收到的签核文件的签核信息和所述第一验证码或所述第二验证码对应的签核信息的比较结果，响应所述下一顺序签核人的签核请求或拒绝签核请求，或响应所述发起人的重新签核请求。\n\n[0010]进一步地，所述“响应发起人或下一顺序签核人对所述第一验证码及所述第二验证码的验证操作，获取服务器端存储的所述第一验证码和所述第二验证码分别对应的签核信息”包括：\n\n[0011]获取及根据所述发起人设置的所述电子签批的至少一签核人的签核顺序，检测是否存在所述下一顺序签核人；\n\n[0012]当不存在所述下一顺序签核人时，响应所述发起人对所述第一验证码及所述第二验证码的验证操作，获取及比较服务器端存储的所述第一验证码和所述第二验证码分别对应的签核信息；\n\n[0013]当存在所述下一顺序签核人时，响应所述下一顺序签核人对所述第一验证码及所述第二验证码的验证操作，获取及比较服务器端存储的所述第一验证码和所述第二验证码分别对应的签核信息。\n\n[0014]进一步地，所述“根据所述发起人或所述下一顺序签核人对其接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息的比较结果，响应所述下一顺序签核人的签核请求或拒绝签核请求，或响应所述发起人的重新签核请求”包括：\n\n[0015]当所述比较结果为所述下一顺序签核人接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息匹配时，响应所述下一顺序签核人的签核请求；\n\n[0016]当所述比较结果为所述下一顺序签核人接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息不匹配时，响应所述下一顺序签核人的拒绝签核请求；\n\n[0017]当所述比较结果为所述发起人接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息不匹配时，响应所述发起人的重新签核请求。\n\n[0018]进一步地，所述“响应所述下一顺序签核人的签核请求”包括：\n\n[0019]获取所述下一顺序签核人对其接收到的签核文件的签核信息，循环执行所述电子签批验证方法。\n\n[0020]进一步地，步骤“响应所述下一顺序签核人的拒绝签核请求”包括：\n\n[0021]获取所述下一顺序签核人输入的拒绝签核信息；\n\n[0022]发送所述下一顺序签核人接收到的签核文件及所述拒绝签核信息至所述当前签核人端，循环执行所述电子签批验证方法。\n\n[0023]进一步地，所述“响应所述发起人的重新签核请求”包括：\n\n[0024]获取所述发起人输入的重新签核信息；\n\n[0025]发送所述发起人接收到的签核文件及所述重新签核信息至最后顺序签核人端，循环执行所述电子签批验证方法。\n\n[0026]本发明另一方面还提供了一种电子签批验证系统，包括生成单元、获取单元、服务器、执行单元和处理器。\n\n[0027]所述生成单元，用于获取当前签核人对其接收到的签核文件的签核信息，生成对应的第一验证码和第二验证码。\n\n[0028]所述获取单元，用于响应发起人或下一顺序签核人对所述第一验证码及所述第二验证码的验证操作，获取所述第一验证码及所述第二验证码对应的签核信息。\n\n[0029]所述处理器，用于根据所述发起人或所述下一顺序签核人对所述第一验证码及所述第二验证码对应的签核信息的比较结果，及对其接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息的比较结果，控制所述执行单元响应所述下一顺序签核人的签核请求或拒绝签核请求，或响应所述发起人的重新签核请求。\n\n[0030]进一步地，所述获取单元包括检测模块和获取模块。\n\n[0031]所述检测模块，用于获取及根据所述发起人设置的所述电子签批的至少一签核人的签核顺序，检测是否存在所述下一顺序签核人。\n\n[0032]所述处理器，还用于当不存在所述下一顺序签核人时，控制所述获取模块响应所述发起人对所述第一验证码及所述第二验证码的扫描操作，获取所述服务器端存储的所述第一验证码及所述第二验证码对应的签核信息；当存在所述下一顺序签核人时，控制所述获取模块响应所述下一顺序签核人对所述第一验证码及所述第二验证码的扫描操作，获取所述服务器端存储的所述第一验证码及所述第二验证码对应的签核信息。\n\n[0033]进一步地，所述执行单元包括获取模块和反馈模块。\n\n[0034]所述获取模块，用于获取所述下一顺序签核人输入的拒绝签核信息，或对其接收到的签核文件的签核信息。\n\n[0035]所述反馈模块，用于发送所述下一顺序签核人接收到的签核文件及所述拒绝签核信息至所述当前签核人端。\n\n[0036]进一步地，所述执行单元包括获取模块和反馈模块。\n\n[0037]所述获取模块，用于获取所述发起人输入的重新签核信息。\n\n[0038]所述反馈模块，用于发送所述发起人接收到的签核文件及所述重新签核信息至最后顺序签核人端。\n\n[0039]本发明实施例提供的电子签批验证方法及系统，根据签核人对签核文件的签核信息，自动生成对应的第一验证码和第二验证码，帮助下一顺序签核人或发起人识别第一验证码或第二验证码的真伪，及识别其接收到的签核文件上签核信息的真伪，对电子签批的签核过程进行验证，从而保证电子签批的有效性，有效避免非法分子对签核文件的假冒签核，对用户造成不必要的损失。\n\n[0040]为使本发明的上述目的、特征和优点能更明显易懂，下文特举较佳实施例，并配合所附附图，作详细说明如下。\n\n附图说明\n\n[0041]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0042]图1示出了本发明实施例提供的一种电子签批验证方法的第一流程示意图；\n\n[0043]图2示出了本发明实施例提供的一种电子签批验证方法的第二流程示意图；\n\n[0044]图3示出了本发明实施例提供的一种电子签批验证系统的结构示意图。\n\n[0045]主要元件符号说明：\n\n[0046]100-电子签批验证系统；10-生成单元；20-获取单元；21-检测模块；22-第一获取模块；30-执行单元；31-第二获取模块；32-反馈模块；40-处理器；50-服务器。\n\n具体实施方式\n\n[0047]为了便于理解本发明，下面将参照相关附图对电子签批验证方法及系统进行更清楚、完整地描述。附图中给出了电子签批验证方法及系统的优选实施例。电子签批验证方法及系统可以通过许多不同的形式来实现，并不限于本文所描述的实施例。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0048]实施例1\n\n[0049]图1示出了本发明实施例提供的一种电子签批验证方法的流程示意图。如图1所示，本发明实施例提供的电子签批验证方法，包括：\n\n[0050]步骤S10，获取当前签核人对其接收到的签核文件的签核信息，生成对应的第一验证码和第二验证码。\n\n[0051]具体地，在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。所述当前签核人可以为任一顺序签核人。响应所述当前签核人对其接收到的签核文件的签核请求，获取及显示发起人、上一顺序签核人或其他人通过移动网络或无线网络上传的签核文件。所述签核文件是指合同、请假条、样品申请、财务报销等需要至少一签核人签字的文件。\n\n[0052]需要说明的是，来自上一顺序签核人的签核文件包括所述上一顺序签核人和/或相对所述上一顺序签核人更靠前顺序签核人的签核信息，换句话说，来自所述签核顺序签核人的签核文件包括发起人设置的至少一签核人中部分签核人的签核信息。例如，一电子签批的签核顺序为研发部经理、物料部经理、财务部经理、董事长，假设当前签核人为财务部经理，则上一顺序签核人为物料部经理，下一顺序签核人为董事长。财务部经理接收到的签核文件包括物料部经理和/或研发部经理的签核信息。发起人接收来自最后顺序签核人的签核文件，本举例中，发起人接收来自董事长的签核文件。\n\n[0053]进一步地，获取所述当前签核人在其接收到的签核文件上输入的签核信息，生成与所述签核信息对应的第一验证码和第二验证码。所述签核信息包括签核人姓名、签核时间、签核终端识别码或签核终端IP地址等。所述第一验证码和所述第二验证码可以是二维码、条形码等。本实施例中，同时生成两个验证码，两个验证码之间的比照可以帮助发起人及任一签核人识别验证码的真伪，从而防止对签核文件的签核信息的伪造。\n\n[0054]步骤S20，响应发起人或下一顺序签核人对所述第一验证码及所述第二验证码的验证操作，获取所述第一验证码和所述第二验证码分别对应的签核信息。\n\n[0055]具体地，所述第一验证码和所述第二验证码用于帮助下一顺序签核人或发起人识别其接收到的签核文件上签核信息的真伪，从而保证电子签批的有效性。由于发起人接收到的签核文件并非一定是来自发起人设置的最后顺序签核人，下一顺序签核人接收到的签核文件也并非一定是来自发起人设置的当前顺序签核人，也有可能是来自任一第三方假冒签核的签核文件。例如，所述签核文件为一项财务报销，可以理解的是，通常，公司规定超过一定额度的财务报销必需由A级及其以上经理签核，如果所述第三方为了进行财务虚假报销，如增加非报销内容等，必须得到A级别及其以上经理的认可。此时，所述第三方可能以所述当前签核人的身份对签核文件假冒签核并将假冒签核的签核文件发送至下一顺序签核人或发起人端。\n\n[0056]本实施例提供的电子签批验证方法，发起人及电子签批的任一签核人对其接收到的签核文件上的签核信息进行验证，从而对电子签批签核过程的每一环节进行验证，可以有效防止电子签批的签核信息的伪造。具体地，获取所述发起人设置的所述电子签批的至少一签核人的签核顺序。根据发起人设置的该电子签批的至少一签核人的签核顺序，检测是否存在下一顺序签核人。\n\n[0057]进一步地，当存在所述下一顺序签核人时，响应所述下一顺序签核人对所述第一验证码及所述第二验证码的验证操作，获取服务器端存储的所述第一验证码和所述第二验证码分别对应的签核信息。当不存在所述下一顺序签核人时，表示发起人设置的至少一签核人均完成对签核文件的签核，换句话说，最后顺序签核人完成对签核文件签核，响应所述发起人对所述第一验证码及所述第二验证码的验证操作，获取服务器端存储的所述第一验证码和所述第二验证码分别对应的签核信息。\n\n[0058]进一步地，根据发起人或下一顺序签核人对所述第一验证码和所述第二验证码分别对应的签核信息的比较结果，执行预设操作。具体地，当所述第一验证码和所述第二验证码分别对应的签核信息不一致时，执行步骤S30；当所述第一验证码和所述第二验证码分别对应的签核信息一致时，执行步骤S40。\n\n[0059]步骤S30，当所述第一验证码和所述第二验证码分别对应的签核信息不一致时，响应所述下一顺序签核人的拒绝签核请求，或响应所述发起人的重新签核请求。\n\n[0060]具体地，响应发起人或下一顺序签核人对所述第一验证码及所述第二验证码的扫描或输入等操作，获取服务器端存储的所述第一验证码和所述第二验证码分别对应的签核信息。当无法获取第一验证码或第二验证码任一对应签核信息，或获取的第一验证码和第二验证码分别对应的签核信息不一致时，表示第一验证码和/或第二验证码存在伪造风险，发起人或下一顺序签核人反馈接收到签核文件至当前签核人重新签核，从而确保电子签批的有效性。\n\n[0061]进一步地，响应发起人的重新签核请求，获取发起人输入或选定的重新签核信息。所述重新签核信息包括重新签核原因，如第一验证码和/或第二验证码存在伪造风险等。反馈所述重新签核信息至最后顺序签核人端，同时，发送发起人接收到的来自最后顺序签核人端的签核文件至最后顺序签核人端，从而最后顺序签核人对签核文件重新签核。执行步骤S10，即循环执行所述电子签批验证方法。本实施例中，最后顺序签核人对签核文件重新签核信息自动覆盖原始签核信息。\n\n[0062]进一步地，响应下一顺序签核人的拒绝签核请求，获取所述下一顺序签核人输入的拒绝签核信息。所述拒绝签核信息包括拒绝签核原因，如第一验证码和/或第二验证码存在伪造风险等。反馈所述拒绝签核信息至当前签核人端，同时，发送下一顺序签核人接收到来自当前签核人的签核文件至当前签核人端，从而当前签核人对签核文件重新签核。执行步骤S10，即循环执行所述电子签批验证方法。\n\n[0063]本发明提供的电子签批验证方法，首先判断验证码的真伪，当第一验证码和/或第二验证码存在伪造风险时，下一顺序签核人直接拒绝签核，或发起人直接发回签核文件至最后顺序签核人重新签核，无需检验签核信息的真伪。\n\n[0064]步骤S40，当所述第一验证码和所述第二验证码分别对应的签核信息一致时，根据所述发起人或所述下一顺序签核人对其接收到的签核文件的签核信息和所述第一验证码或所述第二验证码对应的签核信息的比较结果，响应所述下一顺序签核人的签核请求或拒绝签核请求，或响应所述发起人的重新签核请求。\n\n[0065]具体地，只有当所述第一验证码和所述第二验证码分别对应的签核信息一致时，表示所述第一验证码和所述第二验证码不存在伪造风险，才有必要进一步地判断签核文件上签核信息的真伪。\n\n[0066]进一步地，当所述比较结果为发起人接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息不匹配时，响应发起人的重新签核请求，获取发起人输入或选定的重新签核信息。所述匹配是指签核文件的签核人姓名、签核时间、签核终端识别码等均和所述第一验证码或第二验证码对应的签核信息一致。所述重新签核信息包括重新签核原因，如签核信息存在伪造风险等。反馈所述重新签核信息至最后顺序签核人端，同时，发送发起人接收到的来自最后顺序签核人端的签核文件至最后顺序签核人端，从而最后顺序签核人对签核文件重新签核，确保电子签批的有效性。执行步骤S10，即循环执行所述电子签批验证方法。本实施例中，最后顺序签核人对签核文件重新签核信息自动覆盖原始签核信息。\n\n[0067]进一步地，当所述比较结果为发起人接收到的签核文件的签核信息和所述第一验证码及第二验证码对应的签核信息匹配时，所述电子签批验证方法结束。\n\n[0068]进一步地，当所述比较结果为所述下一顺序签核人接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息匹配时，表示下一顺序签核文件接收到的签核文件来自当前签核人，而非第三方，签核文件的签核信息有效，可以对签核文件继续签核。响应下一顺序签核人的签核请求，获取下一顺序签核人对其接收到的签核文件的签核信息。执行步骤S10，即循环执行所述电子签批验证方法。\n\n[0069]进一步地，当所述比较结果为所述下一顺序签核人接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息不匹配时，表示下一顺序签核人接收到的签核文件的签核信息存在伪造风险，需要反馈至当前签核人重新签核，从而确保电子签批的有效性。响应下一顺序签核人的拒绝签核请求，获取所述下一顺序签核人输入的拒绝签核信息。所述拒绝签核信息包括拒绝签核原因，如签核信息存在伪造风险等。反馈所述拒绝签核信息至当前签核人端，同时，发送下一顺序签核人接收到来自当前签核人的签核文件至当前签核人端，从而当前签核人对签核文件重新签核，确保电子签批的有效性。执行步骤S10，即循环执行所述电子签批验证方法。\n\n[0070]进一步地，循环执行所述电子签批验证方法，发起人及电子签批的任一签核人对其接收到的签核文件上的签核信息进行验证，验证失败的签核文件直接反馈至上一顺序签核人端重新签核，从而电子签批签核过程的每一环节进行验证，可以有效防止电子签批的签核信息的伪造。\n\n[0071]实施例2\n\n[0072]图2示出了本发明实施例提供的一种电子签批验证方法的流程示意图。如图2所示，本发明实施例提供的电子签批验证方法，包括：\n\n[0073]步骤S1，获取当前签核人对其接收到的签核文件的签核信息，生成对应的第一验证码和第二验证码。\n\n[0074]其中，步骤S1和步骤S10内容相同。\n\n[0075]步骤S2，获取及根据所述发起人设置的所述电子签批的至少一签核人的签核顺序，检测是否存在所述下一顺序签核人，当不存在所述下一顺序签核人时，执行步骤S31；当存在所述下一顺序签核人时，执行步骤S41。\n\n[0076]具体地，在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。根据发起人设置的该电子签批的至少一签核人的签核顺序，检测是否存在下一顺序签核人。\n\n[0077]步骤S31，当不存在所述下一顺序签核人时，响应所述发起人对所述第一验证码及所述第二验证码的验证操作，获取服务器端存储的所述第一验证码和所述第二验证码分别对应的签核信息。\n\n[0078]具体地，当不存在所述下一顺序签核人时，表示发起人设置的至少一签核人均完成对签核文件的签核，换句话说，最后顺序签核人完成对签核文件签核。发起人接收来自最后顺序签核人的签核文件。响应所述发起人对所述第一验证码及所述第二验证码的验证操作，获取服务器端存储的所述第一验证码和所述第二验证码分别对应的签核信息。发起人通过比较第一验证码及第二验证码分别对应的签核信息对其真伪进行识别。\n\n[0079]步骤S32，当所述第一验证码和所述第二验证码分别对应的签核信息不一致时，响应所述发起人的重新签核请求。\n\n[0080]具体地，当发起人无法获取第一验证码或第二验证码任一对应签核信息，或获取的第一验证码和第二验证码分别对应的签核信息不一致时，表示第一验证码和/或第二验证码存在伪造风险。响应发起人的重新签核请求，获取发起人输入或选定的重新签核信息。所述重新签核信息包括重新签核原因，如第一验证码和/或第二验证码存在伪造风险等。反馈所述重新签核信息至最后顺序签核人端，同时，发送发起人接收到的来自最后顺序签核人端的签核文件至最后顺序签核人端，从而最后顺序签核人对签核文件重新签核。执行步骤S1，即循环执行所述电子签批验证方法。本实施例中，最后顺序签核人对签核文件重新签核信息自动覆盖原始签核信息。\n\n[0081]步骤S33，当所述第一验证码和所述第二验证码分别对应的签核信息一致时，根据所述发起人对其接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息的比较结果，响应所述发起人的重新签核请求。\n\n[0082]具体地，当所述比较结果为发起人接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息不匹配时，响应所述发起人的重新签核请求，获取发起人输入或选定的重新签核信息。反馈所述重新签核信息至最后顺序签核人端，同时，发送发起人接收到的来自最后顺序签核人端的签核文件至最后顺序签核人端，从而最后顺序签核人对签核文件重新签核，确保电子签批的有效性。执行步骤S1，即循环执行所述电子签批验证方法。\n\n[0083]进一步地，当所述比较结果为发起人接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息匹配时，所述电子签批验证方法结束。\n\n[0084]步骤S41，当存在所述下一顺序签核人时，响应下一顺序签核人对所述第一验证码及所述第二验证码的验证操作，获取服务器端存储的所述第一验证码和所述第二验证码分别对应的签核信息。\n\n[0085]具体地，响应所述下一顺序签核人对所述第一验证码及所述第二验证码的验证操作，获取服务器端存储的所述第一验证码和所述第二验证码分别对应的签核信息。下一顺序签核人通过比较第一验证码及第二验证码分别对应的签核信息对其真伪进行识别。\n\n[0086]步骤S42，当所述第一验证码和所述第二验证码分别对应的签核信息不一致时，响应所述下一顺序签核人的拒绝签核请求。\n\n[0087]具体地，当下一顺序签核人无法获取第一验证码或第二验证码任一对应签核信息，或获取的第一验证码和第二验证码分别对应的签核信息不一致时，表示第一验证码和/或第二验证码存在伪造风险。响应下一顺序签核人的拒绝签核请求，获取所述下一顺序签核人输入的拒绝签核信息。所述拒绝签核信息包括拒绝签核原因，如第一验证码和/或第二验证码存在伪造风险等。反馈所述拒绝签核信息至当前签核人端，同时，发送下一顺序签核人接收到来自当前签核人的签核文件至当前签核人端，从而当前签核人对签核文件重新签核。执行步骤S1，即循环执行所述电子签批验证方法。\n\n[0088]步骤S43，当所述第一验证码和所述第二验证码分别对应的签核信息一致时，根据所述下一顺序签核人对其接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息的比较结果，响应所述下一顺序签核人的签核请求或拒绝签核请求。\n\n[0089]具体地，当所述比较结果为所述下一顺序签核人接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息匹配时，表示下一顺序签核文件接收到的签核文件来自当前签核人，而非第三方，签核文件的签核信息有效，可以对签核文件继续签核。响应下一顺序签核人的签核请求，获取下一顺序签核人对其接收到的签核文件的签核信息。执行步骤S1，即循环执行所述电子签批验证方法。\n\n[0090]进一步地，当所述比较结果为所述下一顺序签核人接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息不匹配时，表示下一顺序签核人接收到的签核文件的签核信息存在伪造风险，需要反馈至当前签核人重新签核。响应下一顺序签核人的拒绝签核请求，获取所述下一顺序签核人输入的拒绝签核信息。所述拒绝签核信息包括拒绝签核原因，如签核信息存在伪造风险等。反馈所述拒绝签核信息至当前签核人端，同时，发送下一顺序签核人接收到来自当前签核人的签核文件至当前签核人端，从而当前签核人对签核文件重新签核，确保电子签批的有效性。执行步骤S1，即循环执行所述电子签批验证方法。\n\n[0091]实施例3\n\n[0092]图3示出了本发明实施例提供的一种电子签批验证系统的结构示意图。如图3所示，本发明实施例提供的一种电子签批验证系统100，包括生成单元10、获取单元20、执行单元30、处理器40和服务器50。生成单元10、获取单元20和执行单元30均与处理器40电性连接。服务器50通过移动网络或无线网络等与处理器40通信连接。\n\n[0093]生成单元10用于获取当前签核人对其接收到的签核文件的签核信息，生成对应的第一验证码和第二验证码。\n\n[0094]具体地，在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。所述当前签核人可以为任一顺序签核人。处理器40响应当前签核人对其接收到的签核文件的签核请求，获取及显示发起人、上一顺序签核人或其他人通过移动网络或无线网络上传的签核文件。所述签核文件是指合同、请假条、样品申请、财务报销等需要至少一签核人签字的文件。\n\n[0095]进一步地，处理器40控制生成单元10获取所述当前签核人在其接收到的签核文件上输入的签核信息，生成与所述签核信息对应的第一验证码和第二验证码。所述签核信息包括签核人姓名、签核时间、签核终端识别码或签核终端IP地址等。所述第一验证码和所述第二验证码可以是二维码、条形码等。本实施例中，同时生成两个验证码，两个验证码之间的比照可以帮助发起人及任一签核人识别验证码的真伪，从而防止对签核文件的签核信息的伪造。\n\n[0096]获取单元20用于响应发起人或下一顺序签核人对所述第一验证码及所述第二验证码的验证操作，获取及比较服务器端存储的所述第一验证码和所述第二验证码分别对应的签核信息。本实施例中，获取单元20包括检测模块21和第一获取模块22。\n\n[0097]检测模块21用于获取及根据发起人设置的电子签批的至少一签核人的签核顺序，检测是否存在下一顺序签核人。\n\n[0098]具体地，处理器40控制检测模块21根据发起人设置的该电子签批的至少一签核人的签核顺序，检测是否存在下一顺序签核人。\n\n[0099]第一获取模块22用于获取服务器50端存储的二维码对应的签核信息。\n\n[0100]具体地，当存在所述下一顺序签核人时，处理器40控制第一获取模块22响应所述下一顺序签核人对所述第一验证码及所述第二验证码的验证操作，获取及比较服务器50端存储的所述第一验证码和所述第二验证码分别对应的签核信息。当不存在所述下一顺序签核人时，表示发起人设置的至少一签核人均完成对签核文件的签核，换句话说，最后顺序签核人完成对签核文件签核，响应所述发起人对所述第一验证码及所述第二验证码的验证操作，获取及比较服务器50端存储的所述第一验证码和所述第二验证码分别对应的签核信息。\n\n[0101]执行单元30用于响应下一顺序签核人的签核请求或拒绝签核请求，或响应发起人的重新签核请求。\n\n[0102]具体地，处理器40根据所述发起人或所述下一顺序签核人对所述第一验证码及所述第二验证码对应的签核信息的比较结果，及对其接收到的签核文件的签核信息和二维码对应的签核信息的比较结果，控制执行单元30响应下一顺序签核人的签核请求或拒绝签核请求，或响应发起人的重新签核请求。\n\n[0103]本实施例中，执行单元30包括第二获取模块31和反馈模块32。\n\n[0104]第二获取模块31用于获取下一顺序签核人或发起人输入的信息。\n\n[0105]本实施例中，三种情况下，处理器40控制第二获取模块31响应发起人的重新签核请求，获取发起人输入或选定的重新签核信息。具体地，一种情况为发起人无法获取第一验证码或第二验证码任一对应签核信息；另一种情况为发起人获取的第一验证码和第二验证码分别对应的签核信息不一致；再一种情况为发起人获取的第一验证码和第二验证码分别对应的签核信息一致，但发起人接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息不匹配。所述匹配是指签核文件的签核人姓名、签核时间、签核终端识别码等均和所述第一验证码或第二验证码对应的签核信息一致。所述重新签核信息包括重新签核原因，如验证码存在伪造风险、签核信息存在伪造风险等。\n\n[0106]进一步地，三种情况下，处理器40控制第二获取模块31响应下一顺序签核人的拒绝签核请求，获取下一顺序签核人输入或选定的拒绝签核信息。具体地，一种情况为下一顺序签核人无法获取第一验证码或第二验证码任一对应签核信息；另一种情况为下一顺序签核人获取的第一验证码和第二验证码分别对应的签核信息不一致；再一种情况为下一顺序签核人获取的第一验证码和第二验证码分别对应的签核信息一致，但下一顺序签核人接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息不匹配。所述拒绝签核信息包括拒绝签核原因，如验证码存在伪造风险、签核信息存在伪造风险等。\n\n[0107]进一步地，当下一顺序签核人获取的第一验证码和第二验证码分别对应的签核信息一致，且下一顺序签核人接收到的签核文件的签核信息和所述第一验证码或第二验证码对应的签核信息匹配时，表示下一顺序签核文件接收到的签核文件来自当前签核人，而非第三方，签核文件的签核信息有效，可以对签核文件继续签核。处理器40控制第二获取模块31响应下一顺序签核人的签核请求，获取下一顺序签核人对其接收到的签核文件的签核信息。\n\n[0108]反馈模块32用于反馈签核文件和/或其他信息至当前签核人或最后顺序签核人。\n\n[0109]具体地，处理器40控制反馈模块32反馈所述重新签核信息至最后顺序签核人端，同时，控制反馈模块32发送发起人接收到的来自最后顺序签核人端的签核文件至最后顺序签核人端，从而最后顺序签核人对签核文件重新签核，确保电子签批的有效性。本实施例中，最后顺序签核人对签核文件重新签核信息自动覆盖原始签核信息。此时，处理器40控制生成单元10获取最后顺序签核人在所述反馈的签核文件上的签核信息，重新生成对应的第一验证码和第二验证码，从而帮助发起人对其接收到的签核文件上的签核信息重新确认。\n\n[0110]进一步地，处理器40控制反馈模块32反馈所述拒绝签核信息至当前签核人端，同时，控制反馈模块32发送下一顺序签核人接收到来自当前签核人的签核文件至当前签核人端，从而当前签核人对签核文件重新签核，确保电子签批的有效性。同理，处理器40控制生成单元10获取当前签核人在所述反馈的签核文件上的签核信息，重新生成对应的第一验证码和第二验证码。\n\n[0111]本实施例提供的电子签批验证系统100，发起人及电子签批的任一签核人对其接收到的签核文件上的签核信息进行验证，验证失败的签核文件直接反馈至上一顺序签核人端重新签核，从而电子签批签核过程的每一环节进行验证，可以有效防止电子签批的签核信息的伪造。\n\n[0112]本发明实施例提供的电子签批验证方法及系统，根据签核人对签核文件的签核信息，自动生成对应的第一验证码和第二验证码，帮助下一顺序签核人或发起人识别第一验证码或第二验证码的真伪，及识别其接收到的签核文件上签核信息的真伪，对电子签批的签核过程进行验证，从而保证电子签批的有效性，有效避免非法分子对签核文件的假冒签核，对用户造成不必要的损失。\n\n[0113]本发明实施例所提供的系统，其实现原理及产生的技术效果和前述方法实施例相同，为简要描述，系统实施例部分未提及之处，可参考前述方法实施例中相应内容。\n\n[0114]在这里示出和描述的所有示例中，任何具体值应被解释为仅仅是示例性的，而不是为限制，因此，示例性实施例的其他示例可以具有不同的值。应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。\n\n[0115]在本申请所提供的几个实施例中，应该理解到，所揭露的装置可以通过其它的方式实现。以上所描述的装置实施例仅仅是示意性的，例如，所述单元的划分，仅仅为一种逻辑功能划分，实际实现时可以有另外的划分方式，又例如，多个单元或组件可以结合或者可以集成到另一个系统，或一些特征可以忽略，或不执行。另一点，所显示或讨论的相互之间的耦合或直接耦合或通信连接可以是通过一些通信接口，装置或单元的间接耦合或通信连接，可以是电性，机械或其它的形式。\n\n[0116]所述为分离部件说明的单元可以是或者也可以不是物理上分开的，为单元显示的部件可以是或者也可以不是物理单元，即可以位于一个地方，或者也可以分布到多个网络单元上。可以根据实际的需要选择其中的部分或者全部单元来实现本实施例方案的目的。\n\n[0117]另外，在本发明各个实施例中的各功能单元可以集成在一个处理单元中，也可以是各个单元单独物理存在，也可以两个或两个以上单元集成在一个单元中。\n\n[0118]以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应所述以权利要求的保护范围为准。\n\n');
INSERT INTO `os_patent_instruction_text` VALUES (11136, 24074, '技术领域\n\n[0001]本发明涉及网络技术领域，涉及一种发起签核的方法，还涉及一种发起签核的设备。\n\n背景技术\n\n[0002]在现有技术中，文件的签核一般是人工来进行的，在具体的过程中，需要将相应的文件打印出来，并以人工的方式传递给各个需要签核的签核人处，操作流程繁琐，费时费力，效率低下。\n\n发明内容\n\n[0003]针对现有技术中的缺陷，本发明提出了一种发起签核的方法和设备，用以克服现有技术中缺陷，实现方便快捷的发起签核，提高签核的效率。\n\n[0004]具体的，本发明提出了以下具体的实施例：\n\n[0005]本发明实施例提出了一种发起签核的方法，应用于签核系统中，该方法包括：\n\n[0006]接收用户的多组选择指令，其中，各组选择指令中包括用于选择签核人的第一选择指令和用于选择签核位置的第二选择指令；其中，各组选择指令在时间上存在先后顺序；\n\n[0007]针对各组选择指令，基于所述第一选择指令确定所选择的签核人的姓名信息，同时基于所述第二选择指令确定所选择的签核位置；\n\n[0008]将所述签核位置设置为所述签核人的签核位置；\n\n[0009]按照所述先后顺序将签核电子文档发送给各所述签核人。\n\n[0010]在一个具体的实施例中，所述签核系统中预设有签核人姓名图标，各签核人姓名图标与所述签核人的姓名信息关联；\n\n[0011]各组选择指令中的第一选择指令，是通过以下方式获取的：\n\n[0012]接收用户点击所述签核人姓名图标所生成的签核人选择信号；其中，所述签核人选择信号中包含有所选择签核人的姓名信息；\n\n[0013]基于所述签核人选择信号生成第一选择指令。\n\n[0014]在一个具体的实施例中，所述签核电子文档预设有多个签核位置；\n\n[0015]各组选择指令中的第二选择指令，是通过以下方式获取的：\n\n[0016]接收用户点击所述签核位置所生成的位置选择信号；其中，所述位置选择信息中包含有所选择签核位置的信息；\n\n[0017]基于所述位置选择信号生成第二选择指令。\n\n[0018]在一个具体的实施例中，所述“按照所述先后顺序将签核电子文档发送给各所述签核人”，包括：\n\n[0019]基于各组选择指令在时间上的先后顺序确定签核人进行签核的顺序以及当前需要进行签核的签核人，并将所述签核电子文档发送给确定的签核人；\n\n[0020]待当前的签核人签核完成，基于当前的签核人的签核生成新的签核电子文档；\n\n[0021]将新生成的签核电子文档发送给确定的下一位签核人。\n\n[0022]在一个具体的实施例中，该方法还包括：\n\n[0023]获取各签核人的联系方式；\n\n[0024]针对各签核人，当签核电子文档停留在签核人的时间超过预设时间阈值，生成提示签核的信息；\n\n[0025]基于所述联系方式将所述信息发送给所述签核人，以提醒所述签核人进行签核。\n\n[0026]本发明实施例还提出了一种发起签核的设备，应用于签核系统中，该设备包括：\n\n[0027]接收模块，用于接收用户的多组选择指令，其中，各组选择指令中包括用于选择签核人的第一选择指令和用于选择签核位置的第二选择指令；其中，各组选择指令在时间上存在先后顺序；\n\n[0028]确定模块，用于针对各组选择指令，基于所述第一选择指令确定所选择的签核人的姓名信息，同时基于所述第二选择指令确定所选择的签核位置；\n\n[0029]设置模块，用于将所述签核位置设置为所述签核人的签核位置；\n\n[0030]发送模块，用于按照所述先后顺序将签核电子文档发送给各所述签核人。\n\n[0031]在一个具体的实施例中，所述签核系统中预设有签核人姓名图标，各签核人姓名图标与所述签核人的姓名信息关联；\n\n[0032]所述接收模块获取各组选择指令中的第一选择指令，包括：\n\n[0033]所述接收模块接收用户点击所述签核人姓名图标所生成的签核人选择信号；其中，所述签核人选择信号中包含有所选择签核人的姓名信息；\n\n[0034]基于所述签核人选择信号生成第一选择指令。\n\n[0035]在一个具体的实施例中，所述签核电子文档预设有多个签核位置；\n\n[0036]所述接收模块获取各组选择指令中的第二选择指令，包括：\n\n[0037]所述接收模块接收用户点击所述签核位置所生成的位置选择信号；其中，所述位置选择信息中包含有所选择签核位置的信息；\n\n[0038]基于所述位置选择信号生成第二选择指令。\n\n[0039]在一个具体的实施例中，所述发送模块，用于：\n\n[0040]基于各组选择指令在时间上的先后顺序确定签核人进行签核的顺序以及当前需要进行签核的签核人，并将所述签核电子文档发送给确定的签核人；\n\n[0041]待当前的签核人签核完成，基于当前的签核人的签核生成新的签核电子文档；\n\n[0042]将新生成的签核电子文档发送给确定的下一位签核人。\n\n[0043]在一个具体的实施例中，该设备还包括：\n\n[0044]提醒模块，用于获取各签核人的联系方式；\n\n[0045]针对各签核人，当签核电子文档停留在签核人的时间超过预设时间阈值，生成提示签核的信息；\n\n[0046]基于所述联系方式将所述信息发送给所述签核人，以提醒所述签核人进行签核。\n\n[0047]与现有技术相比，本发明提出了一种发起签核的方法和设备，应用于签核系统中，其中该方法包括：接收用户的多组选择指令，其中，各组选择指令中包括用于选择签核人的第一选择指令和用于选择签核位置的第二选择指令；其中，各组选择指令在时间上存在先后顺序；针对各组选择指令，基于所述第一选择指令确定所选择的签核人的姓名信息，同时基于所述第二选择指令确定所选择的签核位置；将所述签核位置设置为所述签核人的签核位置；按照所述先后顺序将签核电子文档发送给各所述签核人。以此，使得发起签核地过程方便快捷，方便了签核发起用户的操作。\n\n附图说明\n\n[0048]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0049]图1为本发明实施例提出的一种发起签核的方法流程示意图；\n\n[0050]图2为本发明实施例提出的一种获取第一选择指令的方法的流程示意图；\n\n[0051]图3为本发明实施例提出的一种获取第二选择指令的方法的流程示意图；\n\n[0052]图4为本发明实施例提出的一种电子签核文档的界面示意图；\n\n[0053]图5为本发明实施例提出的一种发送签核电子文档的方法的流程示意图；\n\n[0054]图6为本发明实施例提出的一种发起签核的设备结构示意图；\n\n[0055]图7为本发明实施例提出的一种发起签核的设备结构示意图。\n\n具体实施方式\n\n[0056]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。通常在此处附图中描述和出示的本发明实施例的组件可以以各种不同的配置来布置和设计。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0057]针对现有技术中的缺陷，本发明人发现在实际的应用中，签核过程非常繁琐，效率低下，为此，本发明提出了一种发起签核的方法和设备，应用于签核系统中，具体应用于电子签核过程，用以电子签核过程的效率。\n\n[0058]具体的，本发明提出了以下具体的实施例：\n\n[0059]实施例1\n\n[0060]本发明实施例1公开了一种发起签核的方法，应用于签核系统中，如图1所示，该方法包括：\n\n[0061]步骤101、接收用户的多组选择指令；其中，各组选择指令中包括用于选择签核人的第一选择指令和用于选择签核位置的第二选择指令；其中，各组选择指令在时间上存在先后顺序；\n\n[0062]步骤102、针对各组选择指令，基于所述第一选择指令确定所选择的签核人的姓名信息，同时基于所述第二选择指令确定所选择的签核位置；\n\n[0063]步骤103、将所述签核位置设置为所述签核人的签核位置；\n\n[0064]步骤104、按照所述先后顺序将签核电子文档发送给各所述签核人。\n\n[0065]在一个具体的实施例中，用户可以在一个空白的待签核的模板上进行操作，具体的例如可以自定义待签核的项目，例如请假，报销等等签核请求；此外，还需要选择签核人，在一个具体的实施例中，所述签核系统中预设有签核人姓名图标，各签核人姓名图标与所述签核人的姓名信息关联；在此情况下，步骤101中，各组选择指令中的第一选择指令，如图2所示，是通过以下方式获取的：\n\n[0066]步骤11、接收用户点击所述签核人姓名图标所生成的签核人选择信号；其中，所述签核人选择信号中包含有所选择签核人的信息；\n\n[0067]步骤12、基于所述签核人选择信号生成第一选择指令。\n\n[0068]在此，以一个具体的例子来进行说明，签核系统可以搭载在一个具体的公司的网络系统中，并基于该公司的人员姓名信息进行筛选，将某些人员作为签核人，后续基于所筛选出的人员姓名信息与签核人姓名图标进行关联，具体的，例如有签核人名为“张三”、“李四”；对应的可以选择写有签核人姓名的图标进行关联；具体的，一个签核人姓名图标对应一个签核人。\n\n[0069]当要发起签核时，用户也即签核发起人会在显示界面依次点击多个签核人姓名图标，每次点击都会生成对应的签核人选择信号；例如点击了关于张三的图标，就会生成包含有张三的信息的签核人选择信号；然后基于该签核人选择信号生成第一选择指令，第一选择指令用于选择签核人(在此，例如为张三)进行签核，在此，具体的选择过程以上述为例，则为：选择张三作为签核人进行签核。\n\n[0070]选择了签核人之后，需要为各签核人选择对应的签核位置，具体的，在一个具体的实施例中，所述签核电子文档预设有多个签核位置；由此，在步骤101中，各组选择指令中的第二选择指令，如图3所示，是通过以下方式获取的：\n\n[0071]步骤21、接收用户点击所述签核位置所生成的位置选择信号；其中，所述位置选择信息中包含有所选择签核位置的信息；\n\n[0072]步骤22、基于所述位置选择信号生成第二选择指令。\n\n[0073]而在一个具体的实施例中，所述签核电子文档预设有多个预设签核位置，如图4所示，为一种具体的签核电子文档的界面示意图，图4中有三个预设签核位置，分别为第一签核位置、第二签核位置、第三签核位置。\n\n[0074]在此情况下，例如用户在点击完签核人(例如为签核人A)之后，该用户接下来通过鼠标或者以触控的方式点击了签核电子文档上的第三签核位置，由此会生成的位置选择信号，并由此生成第二选择指令，该第二选择指令用于将第三签核位置设置为所选择的签核人A的签核位置。\n\n[0075]对于其他组选择指令，进行与上述相同的步骤；以此依次确定第一选择指令所确定的签核人的签核位置；后续在进行具体签核时，只要完成签核，用户的所签核的名字或者批注等会自动出现在对应的签核位置。\n\n[0076]在此以一个具体的例子来进行说明，用户点击签核人姓名图标，第一下点击签核人姓名图标(例如对应选择龙一作为签核人)，第二下点击签名位置(例如为位置1)；第三下点击签核人姓名图标(例如对应选择王而作为签核人)，第四下点击签名位置(例如为位置2)；第五下点击签核人姓名图标(例如对应选择张三作为签核人)，第六下点击签名位置(例如为位置3)。\n\n[0077]以此第1组选择指令中包括第一下点击(对应第一选择指令)与第二下点击(对应第二选择指令)所生成的指令；第2组选择指令中包括第三下点击(对应第一选择指令)与第四下点击(对应第二选择指令)所生成的指令；第3组选择指令与此类似，包括第五下点击(对应第一选择指令)与第六下点击(对应第二选择指令)所生成的指令；并以此类推，直到选择完毕。\n\n[0078]在获取到各组选择指令之后，需要进行关联，也即进行步骤103、具体的，也即将所述签核位置设置为所述签核人的签核位置。\n\n[0079]仍以上述为例来进行说明，针对第1组选择指令，姓名为龙一的用户作为签核人，将位置1作为龙一的签核位置；对应的，针对第2组选择指令，将位置2作为王二的签核位置；针对第3组选择指令，将位置3作为张三的签核位置。\n\n[0080]在为各签核人设置了签核位置之后，需要将签核电子文档发送到各个签核人，也即进行步骤103，具体的步骤103、即“按照所述先后顺序将签核电子文档发送给各所述签核人”，如图5所示，包括：\n\n[0081]步骤31、基于各组选择指令在时间上的先后顺序确定签核人进行签核的顺序以及当前需要进行签核的签核人，并将所述签核电子文档发送给确定的签核人；\n\n[0082]步骤32、待当前的签核人签核完成，基于当前的签核人的签核生成新的签核电子文档；\n\n[0083]步骤33、将新生成的签核电子文档发送给确定的下一位签核人。\n\n[0084]在此，以一个具体的例子来进行说明，若按照各组选择指令在时间上的先后顺序设置签核的先后顺序，仍以上述为例来进行说明，时间的从先到后的顺序依次为:第1组选择指令、第2组选择指令、第3组选择指令；对应的签核人的顺序则依次分别为用户1、用户2、用户3。\n\n[0085]在此情况下，首先将签核电子文档发送给用户1进行签核，待用户1签核完成之后，基于用户1的签核，生成新的签核电子文档(例如，该签核电子文档中包含有用户1的签名)，并将新的签核电子文档发送给用户2，用户2在用户1签核的基础上进行签核，用户2签核完成之后，一个具体的例子中，生成的新的签核电子文档中会包含有用户1以及用户2的签名，然后会被发送给用户3进行签核，以此类推，直到签核完成。\n\n[0086]在一个具体的实施例中，考虑到签核电子文档发送到签核人后，签核人可能会没注意到，因此为了提醒签核人，该方法还包括：\n\n[0087]获取各签核人的联系方式；\n\n[0088]针对各签核人，当签核电子文档停留在签核人的时间超过预设时间阈值，生成提示签核的信息；\n\n[0089]基于所述联系方式将所述信息发送给所述签核人，以提醒所述签核人进行签核。\n\n[0090]在该具体的实施例中，例如已经将签核电子文档发送给张三了，但过了很长时间，例如3天，张三一直没有进行签核，在此情况下，会基于获取的张三的联系方式，生成提示信息，来提醒张三及时进行签核。优选的联系方式为手机号，以此提示信息可以为短信。\n\n[0091]实施例2\n\n[0092]本发明实施例2公开了一种发起签核的设备，应用于签核系统中，如图6所示，该设备包括：\n\n[0093]接收模块201，用于接收用户的多组选择指令，其中，各组选择指令中包括用于选择签核人的第一选择指令和用于选择签核位置的第二选择指令；其中，各组选择指令在时间上存在先后顺序；\n\n[0094]确定模块202，用于针对各组选择指令，基于所述第一选择指令确定所选择的签核人的姓名信息，同时基于所述第二选择指令确定所选择的签核位置；\n\n[0095]设置模块203，用于将所述签核位置设置为所述签核人的签核位置；\n\n[0096]发送模块204，用于按照所述先后顺序将签核电子文档发送给各所述签核人。\n\n[0097]在一个具体的实施例中，所述签核系统中预设有签核人姓名图标，各签核人姓名图标与所述签核人的姓名信息关联；\n\n[0098]所述接收模块201获取各组选择指令中的第一选择指令，包括：\n\n[0099]所述接收模块202接收用户点击所述签核人姓名图标所生成的签核人选择信号；其中，所述签核人选择信号中保护有所选择签核人的姓名信息；\n\n[0100]基于所述签核人选择信号生成第一选择指令。\n\n[0101]在一个具体的实施例中，所述签核电子文档预设有多个签核位置；\n\n[0102]所述接收模块201获取各组选择指令中的第二选择指令，包括：\n\n[0103]所述接收模块201接收用户点击所述签核位置所生成的位置选择信号；其中，所述位置选择信息中包含有所选择签核位置的信息；\n\n[0104]基于所述位置选择信号生成第二选择指令。\n\n[0105]在一个具体的实施例中，所述发送模块204，用于：\n\n[0106]基于各组选择指令在时间上的先后顺序确定签核人进行签核的顺序以及当前需要进行签核的签核人，并将所述签核电子文档发送给确定的签核人；\n\n[0107]待当前的签核人签核完成，基于当前的签核人的签核生成新的签核电子文档；\n\n[0108]将新生成的签核电子文档发送给确定的下一位签核人。\n\n[0109]在一个具体的实施例中，如图7所示，该设备还包括：\n\n[0110]提醒模块205，用于获取各签核人的联系方式；\n\n[0111]针对各签核人，当签核电子文档停留在签核人的时间超过预设时间阈值，生成提示签核的信息；\n\n[0112]基于所述联系方式将所述信息发送给所述签核人，以提醒所述签核人进行签核。\n\n[0113]与现有技术相比，本发明提出了一种发起签核的方法和设备，应用于签核系统中，其中该方法包括：接收用户的多组选择指令，其中，各组选择指令中包括用于选择签核人的第一选择指令和用于选择签核位置的第二选择指令；其中，各组选择指令在时间上存在先后顺序；针对各组选择指令，基于所述第一选择指令确定所选择的签核人的姓名信息，同时基于所述第二选择指令确定所选择的签核位置；将所述签核位置设置为所述签核人的签核位置；按照所述先后顺序将签核电子文档发送给各所述签核人；以此，使得发起签核地过程方便快捷，方便了签核发起用户的操作。\n\n[0114]本领域技术人员可以理解附图只是一个优选实施场景的示意图，附图中的模块或流程并不一定是实施本发明所必须的。\n\n[0115]本领域技术人员可以理解实施场景中的装置中的模块可以按照实施场景描述进行分布于实施场景的装置中，也可以进行相应变化位于不同于本实施场景的一个或多个装置中。上述实施场景的模块可以合并为一个模块，也可以进一步拆分成多个子模块。\n\n[0116]上述本发明序号仅仅为了描述，不代表实施场景的优劣。\n\n[0117]以上公开的仅为本发明的几个具体实施场景，但是，本发明并非局限于此，任何本领域的技术人员能思之的变化都应落入本发明的保护范围。\n\n', '技术领域\n\n[0001]本发明涉及网络技术领域，涉及一种发起签核的方法，还涉及一种发起签核的设备。\n\n背景技术\n\n[0002]在现有技术中，文件的签核一般是人工来进行的，在具体的过程中，需要将相应的文件打印出来，并以人工的方式传递给各个需要签核的签核人处，操作流程繁琐，费时费力，效率低下。\n\n发明内容\n\n[0003]针对现有技术中的缺陷，本发明提出了一种发起签核的方法和设备，用以克服现有技术中缺陷，实现方便快捷的发起签核，提高签核的效率。\n\n[0004]具体的，本发明提出了以下具体的实施例：\n\n[0005]本发明实施例提出了一种发起签核的方法，应用于签核系统中，该方法包括：\n\n[0006]接收用户的多组选择指令，其中，各组选择指令中包括用于选择签核人的第一选择指令和用于选择签核位置的第二选择指令；其中，各组选择指令在时间上存在先后顺序；\n\n[0007]针对各组选择指令，基于所述第一选择指令确定所选择的签核人的姓名信息，同时基于所述第二选择指令确定所选择的签核位置；\n\n[0008]将所述签核位置设置为所述签核人的签核位置；\n\n[0009]按照所述先后顺序将签核电子文档发送给各所述签核人。\n\n[0010]在一个具体的实施例中，所述签核系统中预设有签核人姓名图标，各签核人姓名图标与所述签核人的姓名信息关联；\n\n[0011]各组选择指令中的第一选择指令，是通过以下方式获取的：\n\n[0012]接收用户点击所述签核人姓名图标所生成的签核人选择信号；其中，所述签核人选择信号中包含有所选择签核人的姓名信息；\n\n[0013]基于所述签核人选择信号生成第一选择指令。\n\n[0014]在一个具体的实施例中，所述签核电子文档预设有多个签核位置；\n\n[0015]各组选择指令中的第二选择指令，是通过以下方式获取的：\n\n[0016]接收用户点击所述签核位置所生成的位置选择信号；其中，所述位置选择信息中包含有所选择签核位置的信息；\n\n[0017]基于所述位置选择信号生成第二选择指令。\n\n[0018]在一个具体的实施例中，所述“按照所述先后顺序将签核电子文档发送给各所述签核人”，包括：\n\n[0019]基于各组选择指令在时间上的先后顺序确定签核人进行签核的顺序以及当前需要进行签核的签核人，并将所述签核电子文档发送给确定的签核人；\n\n[0020]待当前的签核人签核完成，基于当前的签核人的签核生成新的签核电子文档；\n\n[0021]将新生成的签核电子文档发送给确定的下一位签核人。\n\n[0022]在一个具体的实施例中，该方法还包括：\n\n[0023]获取各签核人的联系方式；\n\n[0024]针对各签核人，当签核电子文档停留在签核人的时间超过预设时间阈值，生成提示签核的信息；\n\n[0025]基于所述联系方式将所述信息发送给所述签核人，以提醒所述签核人进行签核。\n\n[0026]本发明实施例还提出了一种发起签核的设备，应用于签核系统中，该设备包括：\n\n[0027]接收模块，用于接收用户的多组选择指令，其中，各组选择指令中包括用于选择签核人的第一选择指令和用于选择签核位置的第二选择指令；其中，各组选择指令在时间上存在先后顺序；\n\n[0028]确定模块，用于针对各组选择指令，基于所述第一选择指令确定所选择的签核人的姓名信息，同时基于所述第二选择指令确定所选择的签核位置；\n\n[0029]设置模块，用于将所述签核位置设置为所述签核人的签核位置；\n\n[0030]发送模块，用于按照所述先后顺序将签核电子文档发送给各所述签核人。\n\n[0031]在一个具体的实施例中，所述签核系统中预设有签核人姓名图标，各签核人姓名图标与所述签核人的姓名信息关联；\n\n[0032]所述接收模块获取各组选择指令中的第一选择指令，包括：\n\n[0033]所述接收模块接收用户点击所述签核人姓名图标所生成的签核人选择信号；其中，所述签核人选择信号中包含有所选择签核人的姓名信息；\n\n[0034]基于所述签核人选择信号生成第一选择指令。\n\n[0035]在一个具体的实施例中，所述签核电子文档预设有多个签核位置；\n\n[0036]所述接收模块获取各组选择指令中的第二选择指令，包括：\n\n[0037]所述接收模块接收用户点击所述签核位置所生成的位置选择信号；其中，所述位置选择信息中包含有所选择签核位置的信息；\n\n[0038]基于所述位置选择信号生成第二选择指令。\n\n[0039]在一个具体的实施例中，所述发送模块，用于：\n\n[0040]基于各组选择指令在时间上的先后顺序确定签核人进行签核的顺序以及当前需要进行签核的签核人，并将所述签核电子文档发送给确定的签核人；\n\n[0041]待当前的签核人签核完成，基于当前的签核人的签核生成新的签核电子文档；\n\n[0042]将新生成的签核电子文档发送给确定的下一位签核人。\n\n[0043]在一个具体的实施例中，该设备还包括：\n\n[0044]提醒模块，用于获取各签核人的联系方式；\n\n[0045]针对各签核人，当签核电子文档停留在签核人的时间超过预设时间阈值，生成提示签核的信息；\n\n[0046]基于所述联系方式将所述信息发送给所述签核人，以提醒所述签核人进行签核。\n\n[0047]与现有技术相比，本发明提出了一种发起签核的方法和设备，应用于签核系统中，其中该方法包括：接收用户的多组选择指令，其中，各组选择指令中包括用于选择签核人的第一选择指令和用于选择签核位置的第二选择指令；其中，各组选择指令在时间上存在先后顺序；针对各组选择指令，基于所述第一选择指令确定所选择的签核人的姓名信息，同时基于所述第二选择指令确定所选择的签核位置；将所述签核位置设置为所述签核人的签核位置；按照所述先后顺序将签核电子文档发送给各所述签核人。以此，使得发起签核地过程方便快捷，方便了签核发起用户的操作。\n\n附图说明\n\n[0048]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0049]图1为本发明实施例提出的一种发起签核的方法流程示意图；\n\n[0050]图2为本发明实施例提出的一种获取第一选择指令的方法的流程示意图；\n\n[0051]图3为本发明实施例提出的一种获取第二选择指令的方法的流程示意图；\n\n[0052]图4为本发明实施例提出的一种电子签核文档的界面示意图；\n\n[0053]图5为本发明实施例提出的一种发送签核电子文档的方法的流程示意图；\n\n[0054]图6为本发明实施例提出的一种发起签核的设备结构示意图；\n\n[0055]图7为本发明实施例提出的一种发起签核的设备结构示意图。\n\n具体实施方式\n\n[0056]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。通常在此处附图中描述和出示的本发明实施例的组件可以以各种不同的配置来布置和设计。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0057]针对现有技术中的缺陷，本发明人发现在实际的应用中，签核过程非常繁琐，效率低下，为此，本发明提出了一种发起签核的方法和设备，应用于签核系统中，具体应用于电子签核过程，用以电子签核过程的效率。\n\n[0058]具体的，本发明提出了以下具体的实施例：\n\n[0059]实施例1\n\n[0060]本发明实施例1公开了一种发起签核的方法，应用于签核系统中，如图1所示，该方法包括：\n\n[0061]步骤101、接收用户的多组选择指令；其中，各组选择指令中包括用于选择签核人的第一选择指令和用于选择签核位置的第二选择指令；其中，各组选择指令在时间上存在先后顺序；\n\n[0062]步骤102、针对各组选择指令，基于所述第一选择指令确定所选择的签核人的姓名信息，同时基于所述第二选择指令确定所选择的签核位置；\n\n[0063]步骤103、将所述签核位置设置为所述签核人的签核位置；\n\n[0064]步骤104、按照所述先后顺序将签核电子文档发送给各所述签核人。\n\n[0065]在一个具体的实施例中，用户可以在一个空白的待签核的模板上进行操作，具体的例如可以自定义待签核的项目，例如请假，报销等等签核请求；此外，还需要选择签核人，在一个具体的实施例中，所述签核系统中预设有签核人姓名图标，各签核人姓名图标与所述签核人的姓名信息关联；在此情况下，步骤101中，各组选择指令中的第一选择指令，如图2所示，是通过以下方式获取的：\n\n[0066]步骤11、接收用户点击所述签核人姓名图标所生成的签核人选择信号；其中，所述签核人选择信号中包含有所选择签核人的信息；\n\n[0067]步骤12、基于所述签核人选择信号生成第一选择指令。\n\n[0068]在此，以一个具体的例子来进行说明，签核系统可以搭载在一个具体的公司的网络系统中，并基于该公司的人员姓名信息进行筛选，将某些人员作为签核人，后续基于所筛选出的人员姓名信息与签核人姓名图标进行关联，具体的，例如有签核人名为“张三”、“李四”；对应的可以选择写有签核人姓名的图标进行关联；具体的，一个签核人姓名图标对应一个签核人。\n\n[0069]当要发起签核时，用户也即签核发起人会在显示界面依次点击多个签核人姓名图标，每次点击都会生成对应的签核人选择信号；例如点击了关于张三的图标，就会生成包含有张三的信息的签核人选择信号；然后基于该签核人选择信号生成第一选择指令，第一选择指令用于选择签核人(在此，例如为张三)进行签核，在此，具体的选择过程以上述为例，则为：选择张三作为签核人进行签核。\n\n[0070]选择了签核人之后，需要为各签核人选择对应的签核位置，具体的，在一个具体的实施例中，所述签核电子文档预设有多个签核位置；由此，在步骤101中，各组选择指令中的第二选择指令，如图3所示，是通过以下方式获取的：\n\n[0071]步骤21、接收用户点击所述签核位置所生成的位置选择信号；其中，所述位置选择信息中包含有所选择签核位置的信息；\n\n[0072]步骤22、基于所述位置选择信号生成第二选择指令。\n\n[0073]而在一个具体的实施例中，所述签核电子文档预设有多个预设签核位置，如图4所示，为一种具体的签核电子文档的界面示意图，图4中有三个预设签核位置，分别为第一签核位置、第二签核位置、第三签核位置。\n\n[0074]在此情况下，例如用户在点击完签核人(例如为签核人A)之后，该用户接下来通过鼠标或者以触控的方式点击了签核电子文档上的第三签核位置，由此会生成的位置选择信号，并由此生成第二选择指令，该第二选择指令用于将第三签核位置设置为所选择的签核人A的签核位置。\n\n[0075]对于其他组选择指令，进行与上述相同的步骤；以此依次确定第一选择指令所确定的签核人的签核位置；后续在进行具体签核时，只要完成签核，用户的所签核的名字或者批注等会自动出现在对应的签核位置。\n\n[0076]在此以一个具体的例子来进行说明，用户点击签核人姓名图标，第一下点击签核人姓名图标(例如对应选择龙一作为签核人)，第二下点击签名位置(例如为位置1)；第三下点击签核人姓名图标(例如对应选择王而作为签核人)，第四下点击签名位置(例如为位置2)；第五下点击签核人姓名图标(例如对应选择张三作为签核人)，第六下点击签名位置(例如为位置3)。\n\n[0077]以此第1组选择指令中包括第一下点击(对应第一选择指令)与第二下点击(对应第二选择指令)所生成的指令；第2组选择指令中包括第三下点击(对应第一选择指令)与第四下点击(对应第二选择指令)所生成的指令；第3组选择指令与此类似，包括第五下点击(对应第一选择指令)与第六下点击(对应第二选择指令)所生成的指令；并以此类推，直到选择完毕。\n\n[0078]在获取到各组选择指令之后，需要进行关联，也即进行步骤103、具体的，也即将所述签核位置设置为所述签核人的签核位置。\n\n[0079]仍以上述为例来进行说明，针对第1组选择指令，姓名为龙一的用户作为签核人，将位置1作为龙一的签核位置；对应的，针对第2组选择指令，将位置2作为王二的签核位置；针对第3组选择指令，将位置3作为张三的签核位置。\n\n[0080]在为各签核人设置了签核位置之后，需要将签核电子文档发送到各个签核人，也即进行步骤103，具体的步骤103、即“按照所述先后顺序将签核电子文档发送给各所述签核人”，如图5所示，包括：\n\n[0081]步骤31、基于各组选择指令在时间上的先后顺序确定签核人进行签核的顺序以及当前需要进行签核的签核人，并将所述签核电子文档发送给确定的签核人；\n\n[0082]步骤32、待当前的签核人签核完成，基于当前的签核人的签核生成新的签核电子文档；\n\n[0083]步骤33、将新生成的签核电子文档发送给确定的下一位签核人。\n\n[0084]在此，以一个具体的例子来进行说明，若按照各组选择指令在时间上的先后顺序设置签核的先后顺序，仍以上述为例来进行说明，时间的从先到后的顺序依次为:第1组选择指令、第2组选择指令、第3组选择指令；对应的签核人的顺序则依次分别为用户1、用户2、用户3。\n\n[0085]在此情况下，首先将签核电子文档发送给用户1进行签核，待用户1签核完成之后，基于用户1的签核，生成新的签核电子文档(例如，该签核电子文档中包含有用户1的签名)，并将新的签核电子文档发送给用户2，用户2在用户1签核的基础上进行签核，用户2签核完成之后，一个具体的例子中，生成的新的签核电子文档中会包含有用户1以及用户2的签名，然后会被发送给用户3进行签核，以此类推，直到签核完成。\n\n[0086]在一个具体的实施例中，考虑到签核电子文档发送到签核人后，签核人可能会没注意到，因此为了提醒签核人，该方法还包括：\n\n[0087]获取各签核人的联系方式；\n\n[0088]针对各签核人，当签核电子文档停留在签核人的时间超过预设时间阈值，生成提示签核的信息；\n\n[0089]基于所述联系方式将所述信息发送给所述签核人，以提醒所述签核人进行签核。\n\n[0090]在该具体的实施例中，例如已经将签核电子文档发送给张三了，但过了很长时间，例如3天，张三一直没有进行签核，在此情况下，会基于获取的张三的联系方式，生成提示信息，来提醒张三及时进行签核。优选的联系方式为手机号，以此提示信息可以为短信。\n\n[0091]实施例2\n\n[0092]本发明实施例2公开了一种发起签核的设备，应用于签核系统中，如图6所示，该设备包括：\n\n[0093]接收模块201，用于接收用户的多组选择指令，其中，各组选择指令中包括用于选择签核人的第一选择指令和用于选择签核位置的第二选择指令；其中，各组选择指令在时间上存在先后顺序；\n\n[0094]确定模块202，用于针对各组选择指令，基于所述第一选择指令确定所选择的签核人的姓名信息，同时基于所述第二选择指令确定所选择的签核位置；\n\n[0095]设置模块203，用于将所述签核位置设置为所述签核人的签核位置；\n\n[0096]发送模块204，用于按照所述先后顺序将签核电子文档发送给各所述签核人。\n\n[0097]在一个具体的实施例中，所述签核系统中预设有签核人姓名图标，各签核人姓名图标与所述签核人的姓名信息关联；\n\n[0098]所述接收模块201获取各组选择指令中的第一选择指令，包括：\n\n[0099]所述接收模块202接收用户点击所述签核人姓名图标所生成的签核人选择信号；其中，所述签核人选择信号中保护有所选择签核人的姓名信息；\n\n[0100]基于所述签核人选择信号生成第一选择指令。\n\n[0101]在一个具体的实施例中，所述签核电子文档预设有多个签核位置；\n\n[0102]所述接收模块201获取各组选择指令中的第二选择指令，包括：\n\n[0103]所述接收模块201接收用户点击所述签核位置所生成的位置选择信号；其中，所述位置选择信息中包含有所选择签核位置的信息；\n\n[0104]基于所述位置选择信号生成第二选择指令。\n\n[0105]在一个具体的实施例中，所述发送模块204，用于：\n\n[0106]基于各组选择指令在时间上的先后顺序确定签核人进行签核的顺序以及当前需要进行签核的签核人，并将所述签核电子文档发送给确定的签核人；\n\n[0107]待当前的签核人签核完成，基于当前的签核人的签核生成新的签核电子文档；\n\n[0108]将新生成的签核电子文档发送给确定的下一位签核人。\n\n[0109]在一个具体的实施例中，如图7所示，该设备还包括：\n\n[0110]提醒模块205，用于获取各签核人的联系方式；\n\n[0111]针对各签核人，当签核电子文档停留在签核人的时间超过预设时间阈值，生成提示签核的信息；\n\n[0112]基于所述联系方式将所述信息发送给所述签核人，以提醒所述签核人进行签核。\n\n[0113]与现有技术相比，本发明提出了一种发起签核的方法和设备，应用于签核系统中，其中该方法包括：接收用户的多组选择指令，其中，各组选择指令中包括用于选择签核人的第一选择指令和用于选择签核位置的第二选择指令；其中，各组选择指令在时间上存在先后顺序；针对各组选择指令，基于所述第一选择指令确定所选择的签核人的姓名信息，同时基于所述第二选择指令确定所选择的签核位置；将所述签核位置设置为所述签核人的签核位置；按照所述先后顺序将签核电子文档发送给各所述签核人；以此，使得发起签核地过程方便快捷，方便了签核发起用户的操作。\n\n[0114]本领域技术人员可以理解附图只是一个优选实施场景的示意图，附图中的模块或流程并不一定是实施本发明所必须的。\n\n[0115]本领域技术人员可以理解实施场景中的装置中的模块可以按照实施场景描述进行分布于实施场景的装置中，也可以进行相应变化位于不同于本实施场景的一个或多个装置中。上述实施场景的模块可以合并为一个模块，也可以进一步拆分成多个子模块。\n\n[0116]上述本发明序号仅仅为了描述，不代表实施场景的优劣。\n\n[0117]以上公开的仅为本发明的几个具体实施场景，但是，本发明并非局限于此，任何本领域的技术人员能思之的变化都应落入本发明的保护范围。\n\n');
INSERT INTO `os_patent_instruction_text` VALUES (11137, 24075, '技术领域\n\n[0001]本发明涉及电子签批技术领域，具体而言，涉及一种电子签批安全管理方法及系统。\n\n背景技术\n\n[0002]对于公司内部签批流程，通常需要将待签批文件打印出来，然后给到各个签批人处进行签批签字盖章。这样的签批流程较为繁琐，工作效率低下。由此，电子签批应运而生。近年来，电子签批在企业流程、行业应用、移动支付和个人信息安全等各种场景中得到越来越多的应用。\n\n[0003]但现有的电子签批大多通过公共网络传输签批文件，缺乏对传输的签批文件的保护机制。对于企业来说，企业的财政开支状况、项目申请及研发文档等都是非常机密的材料，一些不法的竞争者经常通过技术手段窃取机密，使受害者遭受巨大的经济损失。\n\n发明内容\n\n[0004]本发明正是基于上述问题，提出了一种对签批文件具有保护机制的电子签批方法及系统。\n\n[0005]有鉴于此，本发明一方面提出了一种电子签批安全管理方法，包括：\n\n[0006]响应发起人的电子签批请求，获取所述电子签批的级别及待签核文件；\n\n[0007]比较所述电子签批的级别和存储的一预设级别；\n\n[0008]当所述电子签批的级别不低于所述预设级别时，加密所述待签核文件。\n\n[0009]进一步地，还包括：\n\n[0010]响应发起人的电子签批请求，获取发起人设置的至少一签核人的签核顺序；\n\n[0011]根据所述签核顺序，生成文件传输路径。\n\n[0012]进一步地，还包括：\n\n[0013]当所述电子签批的级别低于所述预设级别时，根据所述文件传输路径建立一常规通道；\n\n[0014]在所述常规通道传输所述待签核文件至签核人端；\n\n[0015]当接收到来自签核人端的已签核文件时，关闭所述常规通道。\n\n[0016]进一步地，步骤“加密所述待签核文件”包括：\n\n[0017]根据所述文件传输路径建立一常规通道；\n\n[0018]对所述常规通道进行加密，建立一加密通道；\n\n[0019]在所述加密通道传输所述待签核文件至签核人端；\n\n[0020]当接收到来自签核人端的已签核文件时，关闭所述加密通道。\n\n[0021]进一步地，步骤“加密所述待签核文件”包括：\n\n[0022]根据所述文件传输路径建立一常规通道；\n\n[0023]对所述待签核文件加密；\n\n[0024]在所述常规通道传输所述加密的待签核文件至签核人端；\n\n[0025]接收来自签核人端的加密的已签核文件，根据存储的发起人和签核人之间关联的解密密钥，对所述加密的已签核文件解密；\n\n[0026]关闭所述常规通道。\n\n[0027]本发明另一方面还提供了一种电子签批安全管理系统，包括获取单元、存储器、比较单元和处理器。\n\n[0028]所述获取单元，用于响应发起人的电子签批请求，获取所述电子签批的级别及待签核文件。\n\n[0029]所述比较单元，用于比较所述电子签批的级别和所述存储器存储的预设级别，生成比较结果。\n\n[0030]所述处理器，用于当所述电子签批的级别不低于所述预设级别时，加密所述待签核文件。\n\n[0031]进一步地，所述获取单元还用于响应发起人的电子签批请求获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。\n\n[0032]进一步地，所述传输单元包括通道建立模块、文件传输模块和通道关闭模块。通道建立模块，用于根据所述文件传输路径建立一常规通道。文件传输模块，用于在所述常规通道发送所述待签核文件至签核人端，及接收来自签核人端的已签核文件。通道关闭模块，用于关闭所述常规通道。\n\n[0033]进一步地，还包括传输单元，所述传输单元包括通道建立模块、加密模块、文件传输模块和通道关闭模块。通道建立模块，用于根据所述文件传输路径建立一常规通道。加密模块，用于对所述常规通道进行加密，建立一加密通道。文件传输模块，用于在所述加密通道发送所述待签核文件至签核人端，及接收来自签核人端的已签核文件。通道关闭模块，用于关闭所述加密通道。\n\n[0034]进一步地，还包括传输单元，所述传输单元包括通道建立模块，加密模块、文件传输模块、解密模块和通道关闭模块。通道建立模块，用于根据所述文件传输路径建立一常规通道。加密模块，用于对所述待签核文件加密。文件传输模块，用于在所述常规通道发送所述加密的待签核文件至签核人端，及接收来自签核人端的加密的已签核文件。解密模块，用于所述存储器存储的发起人和签核人之间关联的解密密钥，对所述加密的已签核文件解密。通道关闭模块，用于关闭所述常规通道。\n\n[0035]本发明实施例提供的电子签批安全管理方法及系统，自动识别发起人发起的电子签批的级别，并根据存储的一预设级别判断该电子签批的重要性，对高于预设级别的电子签批加密传输，从而避免非法分子对重要信息的窃取，对用户造成不必要的损失。\n\n[0036]为使本发明的上述目的、特征和优点能更明显易懂，下文特举较佳实施例，并配合所附附图，作详细说明如下。\n\n附图说明\n\n[0037]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0038]图1示出了本发明实施例提供的一种电子签批安全管理方法的第一流程示意图；\n\n[0039]图2示出了本发明实施例提供的一种电子签批安全管理方法的第二流程示意图；\n\n[0040]图3示出了本发明实施例提供的一种电子签批安全管理系统的结构示意图。\n\n[0041]主要元件符号说明：\n\n[0042]100-电子签批安全管理系统；10-获取单元；20-存储器；30-比较单元；40-传输单元；41-通道建立模块；42-文件传输模块；43-通道关闭模块；44-通道加密模块；45-文件加密模块；46-文件解密模块；50-处理器。\n\n具体实施方式\n\n[0043]为了便于理解本发明，下面将参照相关附图对电子签批安全管理方法及系统进行更清楚、完整地描述。附图中给出了电子签批安全管理方法及系统的优选实施例。电子签批安全管理方法及系统可以通过许多不同的形式来实现，并不限于本文所描述的实施例。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0044]实施例1\n\n[0045]图1示出了本发明实施例提供的一种电子签批安全管理方法的流程示意图。如图1所示，本发明实施例提供的电子签批安全管理方法，包括：\n\n[0046]步骤S10，响应发起人的电子签批请求，获取所述电子签批的级别及待签核文件。\n\n[0047]具体地，响应发起人在用户终端的电子签批请求，获取发起人发起的电子签批的级别，以及发起人设置的至少一签核人。所述用户终端可以是手机、电脑等。在注册账户后，用户可以通过安装在用户终端的电子签批软件或用户终端浏览器中的电子签批网页完成电子签批流程。根据待签核事项的重要性或签核人的职位等，发起人可以通过用户终端上的电子签批软件设置所述电子签批为不同级别，如发起人选定的职位最高的签核人为董事长，则设置该电子签批为最高级别A；发起人发起的电子签批涉及商业秘密，则设置该电子签批为次高级别B等。\n\n[0048]进一步地，响应发起人在用户终端的电子签批请求，获取发起人通过移动网络或无线网络上传的待签核文件。所述待签核文件是指合同、请假条、样品申请等需要至少一签核人签字的文件。\n\n[0049]进一步地，响应发起人的电子签批请求，获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。根据获取的签核顺序，生成对应的文件传输路径。所述文件传输路径是指待签核文件在不同传输节点间的流转路径。例如，一电子签批的签核顺序为物料部经理、财务部经理、研发部经理，则对应的文件传输路径为发起人端、物料部经理端、品质部经理端、研发部经理端、发起人端。\n\n[0050]步骤S20，比较所述电子签批的级别和存储的一预设级别，生成比较结果。\n\n[0051]具体地，获取服务器端存储的至少一预设级别。所述预设级别为区分待签核文件重要性的标准。比较发起人发起的电子签批的级别和该预设级别，生成比较结果。当所述电子签批的级别低于所述预设级别时，表示待签核文件重要性弱，对保密工作不做要求等；但当所述电子签批的级别高于所述预设级别时，表示待签核文件重要性强，需要保密签核等。\n\n[0052]步骤S30，当所述电子签批的级别不低于所述预设级别时，加密所述待签核文件。\n\n[0053]具体地，当所述比较结果为发起人发起的电子签批的级别低于所述预设级别时，常规传输所述待签核文件。根据所述文件传输路径建立一常规通道。所述常规通道为不做加密、加扰等预处理的信号传输通道。根据发起人设置的签核顺序在常规通道传输待签核文件至每一签核人端。优选地，当接收到来自最后一签核人完成签批的已签核文件时，关闭所述常规通道，从而节约网络资源。\n\n[0054]进一步地，当所述比较结果为发起人发起的电子签批的级别不低于所述预设级别时，加密传输所述待签核文件。具体地，根据所述文件传输路径建立一常规通道。根据HTTPS协议(Hyper Text Transfer Protocol over Secure Socket Layer，基于SSL的超文本传输协议)、SSL协议(Secure Sockets Layer，安全套接层)、CA认证(CertificateAuthority，认证授权)、VPN(Virtual Private Network，虚拟专用网)或RAR压缩加密等加密方式对所述常规通道加密，从而建立一加密通道。根据发起人设置的签核顺序在加密通道传输待签核文件至每一签核人端。优选地，当接收到来自最后一签核人完成签批的已签核文件时，关闭所述加密通道，从而节约网络资源。\n\n[0055]实施例2\n\n[0056]图2示出了本发明实施例提供的一种电子签批安全管理方法的流程示意图。如图2所示，本发明实施例提供的电子签批安全管理方法，包括：\n\n[0057]步骤S1，响应发起人的电子签批请求，获取所述电子签批的级别及待签核文件。\n\n[0058]具体地，响应发起人在用户终端的电子签批请求，获取发起人发起的电子签批的级别，发起人设置的至少一签核人以及发起人通过移动网络或无线网络上传的待签核文件。所述用户终端可以是手机、电脑等。在注册账户后，用户可以通过安装在用户终端的电子签批软件或用户终端浏览器中的电子签批网页完成电子签批流程。\n\n[0059]步骤S2，响应发起人的电子签批请求，获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。\n\n[0060]需要说明的是，步骤S1和步骤S2的执行不分先后顺序。\n\n[0061]具体地，响应发起人的电子签批请求，获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。根据获取的签核顺序，生成对应的文件传输路径。\n\n[0062]步骤S3，比较所述电子签批的级别和存储的一预设级别，当所述电子签批的级别低于所述预设级别时，执行步骤S4；当所述电子签批的级别不低于所述预设级别时，执行步骤S5。\n\n[0063]具体地，获取服务器端存储的至少一预设级别。所述预设级别为区分待签核文件重要性的标准。比较发起人发起的电子签批的级别和该预设级别。当所述电子签批的级别低于所述预设级别时，表示待签核文件重要性弱，对保密工作不做要求等，执行步骤S4；当所述电子签批的级别不低于所述预设级别时，表示待签核文件重要性强，需要保密签核等，执行步骤S5。\n\n[0064]步骤S4，常规传输所述待签核文件。\n\n[0065]具体地，当发起人发起的电子签批的级别低于所述预设级别时，常规传输所述待签核文件。根据所述文件传输路径建立一常规通道。根据发起人设置的签核顺序在常规通道传输待签核文件至每一签核人端。优选地，当接收到来自最后一签核人完成签批的已签核文件时，关闭所述常规通道，从而节约网络资源。\n\n[0066]步骤S5，加密传输所述待签核文件。\n\n[0067]具体地，当发起人发起的电子签批的级别不低于所述预设级别时，加密传输所述待签核文件。本实施例中，加密传输所述待签核文件包括两种实施方式。一种实施方式为建立一加密通道，及在该加密通道传输所述待签核文件。具体地，根据所述文件传输路径建立一常规通道。根据HTTPS协议、SSL协议、CA认证、VPN或RAR压缩加密等加密方式对所述常规通道加密，从而建立一加密通道。根据发起人设置的签核顺序在加密通道传输待签核文件至每一签核人端。优选地，当接收到来自最后一签核人完成签批的已签核文件时，关闭所述加密通道，从而节约网络资源。\n\n[0068]另一种实施方式为建立一常规通道，对所述待签核文件加密，及在所述常规通道传输所述加密的待签核文件。具体地，根据所述文件传输路径建立一常规通道。根据SSH协议(SecureShell，安全外壳协议)、PGP协议(Pretty Good Privacy，安全加密)、RSA(非对称加密算法)或用户口令加密等加密方式对所述待签核文件加密。根据发起人设置的签核顺序在常规通道传输待签核文件至每一签核人端。当接收到来自最后一签核人完成签批的加密的已签核文件时，根据存储的解密密钥，对所述加密的已签核文件解密。所述解密密钥可以是发起人和签核人之间预约定的口令、密码等。优选地，当接收到来自最后一签核人完成签批的加密的已签核文件时，关闭所述常规通道，从而节约网络资源。这种方式对传输通道要求比较低，且文件加密技术相比通道加密技术更容易实现。\n\n[0069]实施例3\n\n[0070]图3示出了本发明实施例提供的一种电子签批安全管理系统的结构示意图。如图3所示，本发明实施例提供的一种电子签批安全管理系统100，包括获取单元10、存储器20、比较单元30、传输单元40和处理器50。获取单元10、存储器20、比较单元30和传输单元40均与处理器50通信连接。\n\n[0071]获取单元10用于响应发起人的电子签批请求，获取所述电子签批的级别及待签核文件，获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。\n\n[0072]具体地，根据待签核事项的重要性或签核人的职位等，发起人可以通过用户终端上的电子签批软件设置所述电子签批为不同级别。处理器50控制获取单元10响应发起人的电子签批请求，获取发起人发起的电子签批的级别。同时，处理器50控制获取单元10获取发起人通过移动网络或无线网络上传的待签核文件。所述待签核文件是指合同、请假条、样品申请等需要至少一签核人签字的文件。进一步地，在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。处理器50控制获取单元10获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。所述文件传输路径是指待签核文件在不同传输节点间的流转路径。\n\n[0073]存储器20用于存储一预设级别。所述预设级别为区分待签核文件重要性的标准，如涉及商业秘密等的待签核文件的级别为预设级别。\n\n[0074]比较单元30用于比较发起人发起的电子签批的级别和所述预设级别，生成比较结果。\n\n[0075]传输单元40用于传输所述待签核文件。\n\n[0076]本实施例中，传输单元40包括通道建立模块41、文件传输模块42和通道关闭模块43。通道建立模块41用于根据所述文件传输路径建立一常规通道。文件传输模块42用于在所述常规通道发送所述待签核文件至签核人端，及接收来自签核人端的已签核文件。通道关闭模块43用于关闭所述常规通道。\n\n[0077]进一步地，传输单元40还包括通道加密模块44。通道加密模块44用于对所述常规通道进行加密及安全认证，建立一加密通道。文件传输模块42还用于在所述加密通道发送所述待签核文件至签核人端，及接收来自签核人端的已签核文件。通道关闭模块43还用于关闭所述加密通道。\n\n[0078]处理器50用于根据所述比较结果控制传输单元40加密传输或常规传输所述待签核文件。\n\n[0079]当比较单元30生成的比较结果为发起人发起的电子签批的级别低于存储器20存储的预设级别时，处理器50控制传输单元40常规传输所述待签核文件。具体地，处理器50控制通道建立模块41根据所述文件传输路径建立一常规通道，及控制文件传输模块42根据发起人设置的签核顺序在常规通道传输待签核文件至每一签核人端。优选地，当文件传输模块42接收到来自最后一签核人完成签批的已签核文件时，处理器50控制通道关闭模块43关闭所述常规通道，从而节约网络资源。\n\n[0080]当比较单元30生成的比较结果为发起人发起的电子签批的级别不低于存储器20存储的预设级别时，处理器50控制传输单元40加密传输所述待签核文件。具体地，处理器50控制通道建立模块41根据所述文件传输路径建立一常规通道，及控制通道加密模块44根据HTTPS协议、SSL协议、CA认证、VPN或RAR压缩加密等加密方式对所述常规通道加密，从而建立一加密通道。处理器50控制文件传输模块42根据发起人设置的签核顺序在加密通道传输待签核文件至每一签核人端。优选地，当文件传输模块42接收到来自最后一签核人完成签批的已签核文件时，处理器50控制通道关闭模块43关闭所述加密通道，从而节约网络资源。\n\n[0081]另一实施例中，传输单元40还包括文件加密模块45和文件解密模块46。文件加密模块45用于对所述待签核文件加密。文件传输模块42还用于在所述常规通道发送所述加密的待签核文件至签核人端，及接收来自签核人端的加密的已签核文件。文件解密模块46用于所述存储器存储的发起人和签核人之间关联的解密密钥，对所述加密的已签核文件解密。\n\n[0082]相应地，当比较单元30生成的比较结果为发起人发起的电子签批的级别不低于存储器20存储的预设级别时，处理器50控制传输单元40加密传输所述待签核文件。具体地，处理器50控制通道建立模块41根据所述文件传输路径建立一常规通道，及控制文件加密模块45根据SSH协议、PGP机制、RSA算法或用户口令加密等加密方式对所述待签核文件加密。文件传输模块42根据发起人设置的签核顺序在常规通道传输待签核文件至每一签核人端。当文件传输模块42接收到来自最后一签核人完成签批的加密的已签核文件时，处理器50控制文件解密模块46根据存储器20存储的解密密钥，对所述加密的已签核文件解密。所述解密密钥可以是发起人和签核人之间预约定的口令、密码等。优选地，当文件传输模块42接收到来自最后一签核人完成签批的加密的已签核文件时，处理器50控制通道关闭模块43关闭所述常规通道，从而节约网络资源。\n\n[0083]本发明实施例提供的电子签批安全管理方法及系统，自动识别发起人发起的电子签批的级别，并根据存储的一预设级别判断该电子签批的重要性，对高于预设级别的电子签批加密传输，从而避免非法分子对重要信息的窃取，对用户造成不必要的损失。\n\n[0084]本发明实施例所提供的系统，其实现原理及产生的技术效果和前述方法实施例相同，为简要描述，系统实施例部分未提及之处，可参考前述方法实施例中相应内容。\n\n[0085]在这里示出和描述的所有示例中，任何具体值应被解释为仅仅是示例性的，而不是为限制，因此，示例性实施例的其他示例可以具有不同的值。应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。\n\n[0086]在本申请所提供的几个实施例中，应该理解到，所揭露的装置可以通过其它的方式实现。以上所描述的装置实施例仅仅是示意性的，例如，所述单元的划分，仅仅为一种逻辑功能划分，实际实现时可以有另外的划分方式，又例如，多个单元或组件可以结合或者可以集成到另一个系统，或一些特征可以忽略，或不执行。另一点，所显示或讨论的相互之间的耦合或直接耦合或通信连接可以是通过一些通信接口，装置或单元的间接耦合或通信连接，可以是电性，机械或其它的形式。\n\n[0087]所述为分离部件说明的单元可以是或者也可以不是物理上分开的，为单元显示的部件可以是或者也可以不是物理单元，即可以位于一个地方，或者也可以分布到多个网络单元上。可以根据实际的需要选择其中的部分或者全部单元来实现本实施例方案的目的。\n\n[0088]另外，在本发明各个实施例中的各功能单元可以集成在一个处理单元中，也可以是各个单元单独物理存在，也可以两个或两个以上单元集成在一个单元中。\n\n[0089]以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应所述以权利要求的保护范围为准。\n\n', '技术领域\n\n[0001]本发明涉及电子签批技术领域，具体而言，涉及一种电子签批安全管理方法及系统。\n\n背景技术\n\n[0002]对于公司内部签批流程，通常需要将待签批文件打印出来，然后给到各个签批人处进行签批签字盖章。这样的签批流程较为繁琐，工作效率低下。由此，电子签批应运而生。近年来，电子签批在企业流程、行业应用、移动支付和个人信息安全等各种场景中得到越来越多的应用。\n\n[0003]但现有的电子签批大多通过公共网络传输签批文件，缺乏对传输的签批文件的保护机制。对于企业来说，企业的财政开支状况、项目申请及研发文档等都是非常机密的材料，一些不法的竞争者经常通过技术手段窃取机密，使受害者遭受巨大的经济损失。\n\n发明内容\n\n[0004]本发明正是基于上述问题，提出了一种对签批文件具有保护机制的电子签批方法及系统。\n\n[0005]有鉴于此，本发明一方面提出了一种电子签批安全管理方法，包括：\n\n[0006]响应发起人的电子签批请求，获取所述电子签批的级别及待签核文件；\n\n[0007]比较所述电子签批的级别和存储的一预设级别；\n\n[0008]当所述电子签批的级别不低于所述预设级别时，加密所述待签核文件。\n\n[0009]进一步地，还包括：\n\n[0010]响应发起人的电子签批请求，获取发起人设置的至少一签核人的签核顺序；\n\n[0011]根据所述签核顺序，生成文件传输路径。\n\n[0012]进一步地，还包括：\n\n[0013]当所述电子签批的级别低于所述预设级别时，根据所述文件传输路径建立一常规通道；\n\n[0014]在所述常规通道传输所述待签核文件至签核人端；\n\n[0015]当接收到来自签核人端的已签核文件时，关闭所述常规通道。\n\n[0016]进一步地，步骤“加密所述待签核文件”包括：\n\n[0017]根据所述文件传输路径建立一常规通道；\n\n[0018]对所述常规通道进行加密，建立一加密通道；\n\n[0019]在所述加密通道传输所述待签核文件至签核人端；\n\n[0020]当接收到来自签核人端的已签核文件时，关闭所述加密通道。\n\n[0021]进一步地，步骤“加密所述待签核文件”包括：\n\n[0022]根据所述文件传输路径建立一常规通道；\n\n[0023]对所述待签核文件加密；\n\n[0024]在所述常规通道传输所述加密的待签核文件至签核人端；\n\n[0025]接收来自签核人端的加密的已签核文件，根据存储的发起人和签核人之间关联的解密密钥，对所述加密的已签核文件解密；\n\n[0026]关闭所述常规通道。\n\n[0027]本发明另一方面还提供了一种电子签批安全管理系统，包括获取单元、存储器、比较单元和处理器。\n\n[0028]所述获取单元，用于响应发起人的电子签批请求，获取所述电子签批的级别及待签核文件。\n\n[0029]所述比较单元，用于比较所述电子签批的级别和所述存储器存储的预设级别，生成比较结果。\n\n[0030]所述处理器，用于当所述电子签批的级别不低于所述预设级别时，加密所述待签核文件。\n\n[0031]进一步地，所述获取单元还用于响应发起人的电子签批请求获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。\n\n[0032]进一步地，所述传输单元包括通道建立模块、文件传输模块和通道关闭模块。通道建立模块，用于根据所述文件传输路径建立一常规通道。文件传输模块，用于在所述常规通道发送所述待签核文件至签核人端，及接收来自签核人端的已签核文件。通道关闭模块，用于关闭所述常规通道。\n\n[0033]进一步地，还包括传输单元，所述传输单元包括通道建立模块、加密模块、文件传输模块和通道关闭模块。通道建立模块，用于根据所述文件传输路径建立一常规通道。加密模块，用于对所述常规通道进行加密，建立一加密通道。文件传输模块，用于在所述加密通道发送所述待签核文件至签核人端，及接收来自签核人端的已签核文件。通道关闭模块，用于关闭所述加密通道。\n\n[0034]进一步地，还包括传输单元，所述传输单元包括通道建立模块，加密模块、文件传输模块、解密模块和通道关闭模块。通道建立模块，用于根据所述文件传输路径建立一常规通道。加密模块，用于对所述待签核文件加密。文件传输模块，用于在所述常规通道发送所述加密的待签核文件至签核人端，及接收来自签核人端的加密的已签核文件。解密模块，用于所述存储器存储的发起人和签核人之间关联的解密密钥，对所述加密的已签核文件解密。通道关闭模块，用于关闭所述常规通道。\n\n[0035]本发明实施例提供的电子签批安全管理方法及系统，自动识别发起人发起的电子签批的级别，并根据存储的一预设级别判断该电子签批的重要性，对高于预设级别的电子签批加密传输，从而避免非法分子对重要信息的窃取，对用户造成不必要的损失。\n\n[0036]为使本发明的上述目的、特征和优点能更明显易懂，下文特举较佳实施例，并配合所附附图，作详细说明如下。\n\n附图说明\n\n[0037]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0038]图1示出了本发明实施例提供的一种电子签批安全管理方法的第一流程示意图；\n\n[0039]图2示出了本发明实施例提供的一种电子签批安全管理方法的第二流程示意图；\n\n[0040]图3示出了本发明实施例提供的一种电子签批安全管理系统的结构示意图。\n\n[0041]主要元件符号说明：\n\n[0042]100-电子签批安全管理系统；10-获取单元；20-存储器；30-比较单元；40-传输单元；41-通道建立模块；42-文件传输模块；43-通道关闭模块；44-通道加密模块；45-文件加密模块；46-文件解密模块；50-处理器。\n\n具体实施方式\n\n[0043]为了便于理解本发明，下面将参照相关附图对电子签批安全管理方法及系统进行更清楚、完整地描述。附图中给出了电子签批安全管理方法及系统的优选实施例。电子签批安全管理方法及系统可以通过许多不同的形式来实现，并不限于本文所描述的实施例。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0044]实施例1\n\n[0045]图1示出了本发明实施例提供的一种电子签批安全管理方法的流程示意图。如图1所示，本发明实施例提供的电子签批安全管理方法，包括：\n\n[0046]步骤S10，响应发起人的电子签批请求，获取所述电子签批的级别及待签核文件。\n\n[0047]具体地，响应发起人在用户终端的电子签批请求，获取发起人发起的电子签批的级别，以及发起人设置的至少一签核人。所述用户终端可以是手机、电脑等。在注册账户后，用户可以通过安装在用户终端的电子签批软件或用户终端浏览器中的电子签批网页完成电子签批流程。根据待签核事项的重要性或签核人的职位等，发起人可以通过用户终端上的电子签批软件设置所述电子签批为不同级别，如发起人选定的职位最高的签核人为董事长，则设置该电子签批为最高级别A；发起人发起的电子签批涉及商业秘密，则设置该电子签批为次高级别B等。\n\n[0048]进一步地，响应发起人在用户终端的电子签批请求，获取发起人通过移动网络或无线网络上传的待签核文件。所述待签核文件是指合同、请假条、样品申请等需要至少一签核人签字的文件。\n\n[0049]进一步地，响应发起人的电子签批请求，获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。根据获取的签核顺序，生成对应的文件传输路径。所述文件传输路径是指待签核文件在不同传输节点间的流转路径。例如，一电子签批的签核顺序为物料部经理、财务部经理、研发部经理，则对应的文件传输路径为发起人端、物料部经理端、品质部经理端、研发部经理端、发起人端。\n\n[0050]步骤S20，比较所述电子签批的级别和存储的一预设级别，生成比较结果。\n\n[0051]具体地，获取服务器端存储的至少一预设级别。所述预设级别为区分待签核文件重要性的标准。比较发起人发起的电子签批的级别和该预设级别，生成比较结果。当所述电子签批的级别低于所述预设级别时，表示待签核文件重要性弱，对保密工作不做要求等；但当所述电子签批的级别高于所述预设级别时，表示待签核文件重要性强，需要保密签核等。\n\n[0052]步骤S30，当所述电子签批的级别不低于所述预设级别时，加密所述待签核文件。\n\n[0053]具体地，当所述比较结果为发起人发起的电子签批的级别低于所述预设级别时，常规传输所述待签核文件。根据所述文件传输路径建立一常规通道。所述常规通道为不做加密、加扰等预处理的信号传输通道。根据发起人设置的签核顺序在常规通道传输待签核文件至每一签核人端。优选地，当接收到来自最后一签核人完成签批的已签核文件时，关闭所述常规通道，从而节约网络资源。\n\n[0054]进一步地，当所述比较结果为发起人发起的电子签批的级别不低于所述预设级别时，加密传输所述待签核文件。具体地，根据所述文件传输路径建立一常规通道。根据HTTPS协议(Hyper Text Transfer Protocol over Secure Socket Layer，基于SSL的超文本传输协议)、SSL协议(Secure Sockets Layer，安全套接层)、CA认证(CertificateAuthority，认证授权)、VPN(Virtual Private Network，虚拟专用网)或RAR压缩加密等加密方式对所述常规通道加密，从而建立一加密通道。根据发起人设置的签核顺序在加密通道传输待签核文件至每一签核人端。优选地，当接收到来自最后一签核人完成签批的已签核文件时，关闭所述加密通道，从而节约网络资源。\n\n[0055]实施例2\n\n[0056]图2示出了本发明实施例提供的一种电子签批安全管理方法的流程示意图。如图2所示，本发明实施例提供的电子签批安全管理方法，包括：\n\n[0057]步骤S1，响应发起人的电子签批请求，获取所述电子签批的级别及待签核文件。\n\n[0058]具体地，响应发起人在用户终端的电子签批请求，获取发起人发起的电子签批的级别，发起人设置的至少一签核人以及发起人通过移动网络或无线网络上传的待签核文件。所述用户终端可以是手机、电脑等。在注册账户后，用户可以通过安装在用户终端的电子签批软件或用户终端浏览器中的电子签批网页完成电子签批流程。\n\n[0059]步骤S2，响应发起人的电子签批请求，获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。\n\n[0060]需要说明的是，步骤S1和步骤S2的执行不分先后顺序。\n\n[0061]具体地，响应发起人的电子签批请求，获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。根据获取的签核顺序，生成对应的文件传输路径。\n\n[0062]步骤S3，比较所述电子签批的级别和存储的一预设级别，当所述电子签批的级别低于所述预设级别时，执行步骤S4；当所述电子签批的级别不低于所述预设级别时，执行步骤S5。\n\n[0063]具体地，获取服务器端存储的至少一预设级别。所述预设级别为区分待签核文件重要性的标准。比较发起人发起的电子签批的级别和该预设级别。当所述电子签批的级别低于所述预设级别时，表示待签核文件重要性弱，对保密工作不做要求等，执行步骤S4；当所述电子签批的级别不低于所述预设级别时，表示待签核文件重要性强，需要保密签核等，执行步骤S5。\n\n[0064]步骤S4，常规传输所述待签核文件。\n\n[0065]具体地，当发起人发起的电子签批的级别低于所述预设级别时，常规传输所述待签核文件。根据所述文件传输路径建立一常规通道。根据发起人设置的签核顺序在常规通道传输待签核文件至每一签核人端。优选地，当接收到来自最后一签核人完成签批的已签核文件时，关闭所述常规通道，从而节约网络资源。\n\n[0066]步骤S5，加密传输所述待签核文件。\n\n[0067]具体地，当发起人发起的电子签批的级别不低于所述预设级别时，加密传输所述待签核文件。本实施例中，加密传输所述待签核文件包括两种实施方式。一种实施方式为建立一加密通道，及在该加密通道传输所述待签核文件。具体地，根据所述文件传输路径建立一常规通道。根据HTTPS协议、SSL协议、CA认证、VPN或RAR压缩加密等加密方式对所述常规通道加密，从而建立一加密通道。根据发起人设置的签核顺序在加密通道传输待签核文件至每一签核人端。优选地，当接收到来自最后一签核人完成签批的已签核文件时，关闭所述加密通道，从而节约网络资源。\n\n[0068]另一种实施方式为建立一常规通道，对所述待签核文件加密，及在所述常规通道传输所述加密的待签核文件。具体地，根据所述文件传输路径建立一常规通道。根据SSH协议(SecureShell，安全外壳协议)、PGP协议(Pretty Good Privacy，安全加密)、RSA(非对称加密算法)或用户口令加密等加密方式对所述待签核文件加密。根据发起人设置的签核顺序在常规通道传输待签核文件至每一签核人端。当接收到来自最后一签核人完成签批的加密的已签核文件时，根据存储的解密密钥，对所述加密的已签核文件解密。所述解密密钥可以是发起人和签核人之间预约定的口令、密码等。优选地，当接收到来自最后一签核人完成签批的加密的已签核文件时，关闭所述常规通道，从而节约网络资源。这种方式对传输通道要求比较低，且文件加密技术相比通道加密技术更容易实现。\n\n[0069]实施例3\n\n[0070]图3示出了本发明实施例提供的一种电子签批安全管理系统的结构示意图。如图3所示，本发明实施例提供的一种电子签批安全管理系统100，包括获取单元10、存储器20、比较单元30、传输单元40和处理器50。获取单元10、存储器20、比较单元30和传输单元40均与处理器50通信连接。\n\n[0071]获取单元10用于响应发起人的电子签批请求，获取所述电子签批的级别及待签核文件，获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。\n\n[0072]具体地，根据待签核事项的重要性或签核人的职位等，发起人可以通过用户终端上的电子签批软件设置所述电子签批为不同级别。处理器50控制获取单元10响应发起人的电子签批请求，获取发起人发起的电子签批的级别。同时，处理器50控制获取单元10获取发起人通过移动网络或无线网络上传的待签核文件。所述待签核文件是指合同、请假条、样品申请等需要至少一签核人签字的文件。进一步地，在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。处理器50控制获取单元10获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。所述文件传输路径是指待签核文件在不同传输节点间的流转路径。\n\n[0073]存储器20用于存储一预设级别。所述预设级别为区分待签核文件重要性的标准，如涉及商业秘密等的待签核文件的级别为预设级别。\n\n[0074]比较单元30用于比较发起人发起的电子签批的级别和所述预设级别，生成比较结果。\n\n[0075]传输单元40用于传输所述待签核文件。\n\n[0076]本实施例中，传输单元40包括通道建立模块41、文件传输模块42和通道关闭模块43。通道建立模块41用于根据所述文件传输路径建立一常规通道。文件传输模块42用于在所述常规通道发送所述待签核文件至签核人端，及接收来自签核人端的已签核文件。通道关闭模块43用于关闭所述常规通道。\n\n[0077]进一步地，传输单元40还包括通道加密模块44。通道加密模块44用于对所述常规通道进行加密及安全认证，建立一加密通道。文件传输模块42还用于在所述加密通道发送所述待签核文件至签核人端，及接收来自签核人端的已签核文件。通道关闭模块43还用于关闭所述加密通道。\n\n[0078]处理器50用于根据所述比较结果控制传输单元40加密传输或常规传输所述待签核文件。\n\n[0079]当比较单元30生成的比较结果为发起人发起的电子签批的级别低于存储器20存储的预设级别时，处理器50控制传输单元40常规传输所述待签核文件。具体地，处理器50控制通道建立模块41根据所述文件传输路径建立一常规通道，及控制文件传输模块42根据发起人设置的签核顺序在常规通道传输待签核文件至每一签核人端。优选地，当文件传输模块42接收到来自最后一签核人完成签批的已签核文件时，处理器50控制通道关闭模块43关闭所述常规通道，从而节约网络资源。\n\n[0080]当比较单元30生成的比较结果为发起人发起的电子签批的级别不低于存储器20存储的预设级别时，处理器50控制传输单元40加密传输所述待签核文件。具体地，处理器50控制通道建立模块41根据所述文件传输路径建立一常规通道，及控制通道加密模块44根据HTTPS协议、SSL协议、CA认证、VPN或RAR压缩加密等加密方式对所述常规通道加密，从而建立一加密通道。处理器50控制文件传输模块42根据发起人设置的签核顺序在加密通道传输待签核文件至每一签核人端。优选地，当文件传输模块42接收到来自最后一签核人完成签批的已签核文件时，处理器50控制通道关闭模块43关闭所述加密通道，从而节约网络资源。\n\n[0081]另一实施例中，传输单元40还包括文件加密模块45和文件解密模块46。文件加密模块45用于对所述待签核文件加密。文件传输模块42还用于在所述常规通道发送所述加密的待签核文件至签核人端，及接收来自签核人端的加密的已签核文件。文件解密模块46用于所述存储器存储的发起人和签核人之间关联的解密密钥，对所述加密的已签核文件解密。\n\n[0082]相应地，当比较单元30生成的比较结果为发起人发起的电子签批的级别不低于存储器20存储的预设级别时，处理器50控制传输单元40加密传输所述待签核文件。具体地，处理器50控制通道建立模块41根据所述文件传输路径建立一常规通道，及控制文件加密模块45根据SSH协议、PGP机制、RSA算法或用户口令加密等加密方式对所述待签核文件加密。文件传输模块42根据发起人设置的签核顺序在常规通道传输待签核文件至每一签核人端。当文件传输模块42接收到来自最后一签核人完成签批的加密的已签核文件时，处理器50控制文件解密模块46根据存储器20存储的解密密钥，对所述加密的已签核文件解密。所述解密密钥可以是发起人和签核人之间预约定的口令、密码等。优选地，当文件传输模块42接收到来自最后一签核人完成签批的加密的已签核文件时，处理器50控制通道关闭模块43关闭所述常规通道，从而节约网络资源。\n\n[0083]本发明实施例提供的电子签批安全管理方法及系统，自动识别发起人发起的电子签批的级别，并根据存储的一预设级别判断该电子签批的重要性，对高于预设级别的电子签批加密传输，从而避免非法分子对重要信息的窃取，对用户造成不必要的损失。\n\n[0084]本发明实施例所提供的系统，其实现原理及产生的技术效果和前述方法实施例相同，为简要描述，系统实施例部分未提及之处，可参考前述方法实施例中相应内容。\n\n[0085]在这里示出和描述的所有示例中，任何具体值应被解释为仅仅是示例性的，而不是为限制，因此，示例性实施例的其他示例可以具有不同的值。应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。\n\n[0086]在本申请所提供的几个实施例中，应该理解到，所揭露的装置可以通过其它的方式实现。以上所描述的装置实施例仅仅是示意性的，例如，所述单元的划分，仅仅为一种逻辑功能划分，实际实现时可以有另外的划分方式，又例如，多个单元或组件可以结合或者可以集成到另一个系统，或一些特征可以忽略，或不执行。另一点，所显示或讨论的相互之间的耦合或直接耦合或通信连接可以是通过一些通信接口，装置或单元的间接耦合或通信连接，可以是电性，机械或其它的形式。\n\n[0087]所述为分离部件说明的单元可以是或者也可以不是物理上分开的，为单元显示的部件可以是或者也可以不是物理单元，即可以位于一个地方，或者也可以分布到多个网络单元上。可以根据实际的需要选择其中的部分或者全部单元来实现本实施例方案的目的。\n\n[0088]另外，在本发明各个实施例中的各功能单元可以集成在一个处理单元中，也可以是各个单元单独物理存在，也可以两个或两个以上单元集成在一个单元中。\n\n[0089]以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应所述以权利要求的保护范围为准。\n\n');
INSERT INTO `os_patent_instruction_text` VALUES (11138, 24076, '技术领域\n\n[0001]本发明涉及网络技术领域，特别涉及一种签核发起用户管理方法和设备。\n\n背景技术\n\n[0002]在现有技术中，文件的签核一般是人工来进行的，在具体的过程中，需要将相应的文件打印出来，并以人工的方式传递给各个需要签核的签核人处，操作流程繁琐，费时费力，效率低下；且当某位签核人不在的时候，就会耽搁整个流程的正常进行。\n\n[0003]为此，目前有提到有一种电子签核的方式，但这种方式安全性不高，影响用户的体验。\n\n发明内容\n\n[0004]针对现有技术中的缺陷，本发明提出了一种签核发起用户管理方法和设备，用以克服现有技术中的缺陷，提高电子签核的安全性，保障用户的体验。\n\n[0005]具体的，本发明提出了以下具体的实施例：\n\n[0006]本发明实施例提出了一种签核发起用户管理方法，应用于电子签核过程，包括：\n\n[0007]当接收到签核发起用户的签核请求时，基于所述签核请求确定待发起的签核申请的级别；\n\n[0008]根据签核申请的级别对所述签核发起用户进行验证；\n\n[0009]当验证通过时，允许所述签核发起用户基于所述签核请求发起签核申请。\n\n[0010]进一步的，在一个具体的实施例中，还包括：\n\n[0011]若验证不通过，则中止所述签核发起用户发起签核申请的过程。\n\n[0012]进一步的，在一个具体的实施例中，所述签核申请预设有多个级别，不同的级别对应有不同的验证方式；\n\n[0013]所述根据签核申请的级别对所述签核发起用户进行验证，具体包括：\n\n[0014]基于签核申请的级别确定对应的验证方式；\n\n[0015]基于确定的验证方式对所述签核发起用户进行验证。\n\n[0016]进一步的，在一个具体的实施例中，所述验证方式设置有对应的验证级别；其中，验证级别越高，验证的可靠性越高；签核申请的级别与所述验证级别之间建立有对应关系\n\n[0017]所述基于签核申请的级别确定对应的验证方式，具体包括：\n\n[0018]基于签核申请的级别以及对应关系确定对应的验证级别；\n\n[0019]基于所述确定的验证级别确定对应的验证方式。\n\n[0020]进一步的，在一个具体的实施例中，所述验证方式包括：短信验证码验证、指纹验证、语音验证，验证问题验证中的一个或多个的任意组合。\n\n[0021]本发明实施例还提出了一种签核发起用户管理设备，应用于电子签核过程，包括：\n\n[0022]确定模块，用于当接收到签核发起用户的签核请求时，基于所述签核请求确定待发起的签核申请的级别；\n\n[0023]验证模块，用于根据签核申请的级别对所述签核发起用户进行验证；\n\n[0024]签核发起模块，用于当验证通过时，允许所述签核发起用户基于所述签核请求发起签核申请。\n\n[0025]进一步的，在一个具体的实施例中，还包括：\n\n[0026]中止模块，用于当验证不通过时，中止所述签核发起用户发起签核申请的过程。\n\n[0027]进一步的，在一个具体的实施例中，所述签核申请预设有多个级别，不同的级别对应有不同的验证方式；\n\n[0028]所述验证模块，具体用于：\n\n[0029]基于签核申请的级别确定对应的验证方式；\n\n[0030]基于确定的验证方式对所述签核发起用户进行验证。\n\n[0031]进一步的，在一个具体的实施例中，所述验证方式设置有对应的验证级别；其中，验证级别越高，验证的可靠性越高；签核申请的级别与所述验证级别之间建立有对应关系\n\n[0032]所述验证模块基于签核申请的级别确定对应的验证方式，具体包括：\n\n[0033]基于签核申请的级别以及对应关系确定对应的验证级别；\n\n[0034]基于所述确定的验证级别确定对应的验证方式。\n\n[0035]进一步的，在一个具体的实施例中，所述验证方式包括：短信验证码验证、指纹验证、语音验证，验证问题验证中的一个或多个的任意组合。\n\n[0036]与现有技术相比，本发明实施例提出了一种签核发起用户管理方法和设备，应用于电子签核过程，其中，该签核发起用户管理方法包括：当接收到签核发起用户的签核请求时，基于所述签核请求确定待发起的签核申请的级别；根据签核申请的级别对所述签核发起用户进行验证；当验证通过时，允许所述签核发起用户基于所述签核请求发起签核申请。以此，通过上述方法，通过对签核发起用户进行验证，提高了电子签核过程的安全性，保障了用户的使用体验。\n\n附图说明\n\n[0037]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0038]图1为本发明实施例提出的一种签核发起用户管理方法流程示意图；\n\n[0039]图2为本发明实施例提出的一种对签核发起用户进行验证的方法流程示意图；\n\n[0040]图3为本发明实施例提出的一种签核发起用户管理设备的结构示意图；\n\n[0041]图4为本发明实施例提出的一种签核发起用户管理设备的结构示意图。\n\n具体实施方式\n\n[0042]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。通常在此处附图中描述和出示的本发明实施例的组件可以以各种不同的配置来布置和设计。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0043]针对现有技术中的缺陷，本发明人发现在实际的应用中，签核发起用户出现的安全问题较大，为此，本发明提出了一种签核发起用户管理方法和设备，应用于电子签核过程，用以提高电子签核过程的安全性。\n\n[0044]具体的，本发明提出了以下具体的实施例：\n\n[0045]实施例1\n\n[0046]本发明实施例1提出了一种签核发起用户管理方法，应用于电子签核过程，如图1所示，包括以下步骤：\n\n[0047]步骤101、当接收到签核发起用户的签核请求时，基于所述签核请求确定待发起的签核申请的级别；\n\n[0048]步骤102、根据签核申请的级别对所述签核发起用户进行验证；\n\n[0049]步骤103、当验证通过时，允许所述签核发起用户基于所述签核请求发起签核申请。\n\n[0050]具体的，在此通过一个具体的例子来对签核过程进行说明，在一个具体的实施例中，例如签核请求可以为关于请假的签核请求，某公司的员工A想向公司请假，为此需要发起一个关于请假的签核请求，在该发起签核的过程中，员工A即为签核发起用户。\n\n[0051]而除了关于请假的签核请求以外，签核请求还可以有很多其他的实施例，例如关于报销的签核请求，以及关于升迁命令的签核请求等等，而对应的，发起签核过程的用户(也即发送签核请求的用户)即为签核发起用户。\n\n[0052]而在收到签核请求之后，会确定签核请求所对应的签核申请，仍以上述为例来进行说明，关于请假的签核请求所对应的签核申请也即是关于请假的签核申请，当然其他的签核请求对应有其他的签核申请。\n\n[0053]而具体的签核申请对应有不同的级别，具体的，在一个具体的实施例中，可以设置为级别对应有权限或者重要性，具体的，对应关系可以设置为级别越高，对应的权限越大，或者重要性越高，例如相比较与请假的级别，关于公司内部的人事任免的签核申请的级别会相应的高一些。\n\n[0054]而在一个具体的实施例中，确定待发起的签核申请的级别之后，会进行验证，也即执行步骤102、确定待发起的签核申请的级别。\n\n[0055]具体的，所述签核申请预设有多个级别，不同的级别对应有不同的验证方式；\n\n[0056]由此，如图2所示，所述根据签核申请的级别对所述签核发起用户进行验证，具体包括：\n\n[0057]步骤1021、基于签核申请的级别确定对应的验证方式；\n\n[0058]步骤1022、基于确定的验证方式对所述签核发起用户进行验证。\n\n[0059]在此，通过一个具体的实施例来对步骤102进行说明，例如签核申请预设有4个级别，分别命名为级别1、级别2、级别3、级别4；而不同的级别对应有不同的验证方式，例如级别1对应的验证方式1、级别2对应验证方式2、级别3对应验证方式3、级别4对应验证方式4。\n\n[0060]由此具体的验证过程为，首先确定签核申请的级别，例如确定签核申请的级别为级别3，然后基于所确定的签核申请的级别确定验证方式，仍以上述为例，则验证方式为验证方式3，后续具体的验证则是通过验证方式3来对签核发起用户进行验证。\n\n[0061]而所述验证方式可以包括：短信验证码验证、指纹验证、语音验证，验证问题验证中的一个或多个的任意组合。\n\n[0062]以短信验证码验证为例，在进行验证时，会发送对应的验证码到签核发起用户所在的手机上，签核发起用户需要在指定的区域填写所收到的验证码，以完成验证，如此保证签核发起人是本人；而若是验证码输入错误，或者在指定时间范围内没有输入正确的验证码，则验证不通过。\n\n[0063]此外，关于指纹验证，可以在进行验证时，需要签核发起用户在指定的设备上按压自身的一个或多个手指的指纹，在获取到指纹后与预先存储的指纹进行匹配，若能匹配上，则验证通过；若无法匹配上，则验证不通过。\n\n[0064]关于语音验证，在一个具体的实施例中，需要在验证时签核发起用户即时读入一定文字的语音，例如该一定文字可以为：“我是xx”，在获取到语音后与预先存储的语音进行匹配，若能匹配上，则验证通过；若无法匹配上，则验证不通过。\n\n[0065]关于验证问题验证，在一个具体的实施例中，可以事先为签核发起用户分配验证问题以及对应的验证答案，当然也可以是签核发起用户自身设置的，后续基于验证问题进行回答，若回答的与对应的验证答案一致，则验证通过；反之，则验证不通过。\n\n[0066]除了上述所述的几种具体的验证方式以外，还可以对签核发起用户所在的登录环境进行验证，通过对登录环境的验证，来对签核发起用户进行验证。具体的，例如可以有以下几种具体的验证方式：\n\n[0067]方式1，获取所述签核发起用户发送登录请求时的登录IP；\n\n[0068]判断所述登录IP是否存在于预先存储的已验证IP数据库中；\n\n[0069]若判断结果为是，则验证通过；\n\n[0070]若判断结果为否，则验证不通过。\n\n[0071]在方式1中，具体的验证是基于IP来进行验证的，在签核发起用户发送登录请求时，获取到所在环境的IP(Internet Protocol,网络之间互连的协议)，而在事先，有基于分配的一批IP或者已验证过一批IP来形成了已验证IP数据库，由此进行判断所获取到的IP是否存在于已验证IP数据库中；若判断结果为是，则可以确定验证通过；反之，则可以确定验证不通过。\n\n[0072]方式2，获取所述签核发起用户发送登录请求的终端的终端信息；\n\n[0073]判断所述终端信息是否存在于预先存储的已验证终端信息数据库中；\n\n[0074]若判断结果为是，则确定验证通过；\n\n[0075]若判断结果为否，则确定验证不通过。\n\n[0076]方式2中的方式中，在事先会验证或者授权一批终端作为已验证终端，其对应的终端信息则形成已验证终端信息数据库，具体的终端信息可以包括有终端的标识，为终端设置的识别码等等。\n\n[0077]后续在进行验证时，提取到签核发起用户发送登录请求的终端的终端信息，并与已验证终端信息数据库中所存储的已验证终端信息进行匹配，若能匹配上，则说明签核发起用户所在的登录环境为已验证登录环境，也即确定验证通过；反之，则可以确定签核发起用户所在的登录环境不是已验证登录环境，即验证不通过。\n\n[0078]在一个具体的应用场景中，除了分别对IP以及终端进行验证以外，还可以结合两者进行组合验证，只有当IP与终端都匹配上时，才验证通过；具体的验证过程可以基于实际的需要以及实际的环境进行设置，除了IP以及终端进行验证以外，还可以设置其他的验证方式，以及其他的组合验证方式。\n\n[0079]此外，在一个具体的实施例中，所述验证方式设置有对应的验证级别；其中，验证级别越高，验证的可靠性越高；签核申请的级别与所述验证级别之间建立有对应关系。\n\n[0080]由此，步骤1021、也即所述基于签核申请的级别确定对应的验证方式，具体包括：\n\n[0081]步骤11、基于签核申请的级别以及对应关系确定对应的验证级别；\n\n[0082]步骤12、基于所述确定的验证级别确定对应的验证方式。\n\n[0083]具体的，在一个实际的实施例中，除了验证方式基于不同级别的签核申请的不同而不同以外；验证方式的级别还根据签核申请的级别的不同而不同，具体的，验证方式的级别与签核申请的级别是正相关的，也即签核申请的级别越高，对应的验证方式的级别也越高，其中，级别越高，说明重要性越高。\n\n[0084]具体的，当步骤102中的验证通过时，可以允许签核发起用户正常发起签核申请的流程，而若是验证不通过，则中止所述签核发起用户发起签核申请的过程。也即无法发起签核申请的过程。\n\n[0085]本发明实施例1提出了一种签核发起用户管理方法，应用于电子签核过程，包括：当接收到签核发起用户的签核请求时，基于所述签核请求确定待发起的签核申请的级别；根据签核申请的级别对所述签核发起用户进行验证；当验证通过时，允许所述签核发起用户基于所述签核请求发起签核申请。以此，通过上述方法，通过对签核发起用户进行验证，提高了电子签核过程的安全性，保障了用户的使用体验。\n\n[0086]实施例2\n\n[0087]为了对本发明进行进一步的说明，本发明实施例2还公开了一种签核发起用户管理设备，应用于电子签核过程，如图3所示，包括：\n\n[0088]确定模块201，用于当接收到签核发起用户的签核请求时，基于所述签核请求确定待发起的签核申请的级别；\n\n[0089]验证模块202，用于根据签核申请的级别对所述签核发起用户进行验证；\n\n[0090]签核发起模块203，用于当验证通过时，允许所述签核发起用户基于所述签核请求发起签核申请。\n\n[0091]具体的，如图4所示，在一个具体的实施例中，签核发起用户管理设备还可以包括：\n\n[0092]中止模块204，用于当验证不通过时，中止所述签核发起用户发起签核申请的过程。\n\n[0093]具体的，在一个具体的实施例中，所述签核申请预设有多个级别，不同的级别对应有不同的验证方式；\n\n[0094]所述验证模块202，具体用于：\n\n[0095]基于签核申请的级别确定对应的验证方式；\n\n[0096]基于确定的验证方式对所述签核发起用户进行验证。\n\n[0097]在一个具体的实施例中，，所述验证方式设置有对应的验证级别；其中，验证级别越高，验证的可靠性越高；签核申请的级别与所述验证级别之间建立有对应关系\n\n[0098]所述验证模块202基于签核申请的级别确定对应的验证方式，具体包括：\n\n[0099]基于签核申请的级别以及对应关系确定对应的验证级别；\n\n[0100]基于所述确定的验证级别确定对应的验证方式。\n\n[0101]在一个具体的实施例中，所述验证方式包括：短信验证码验证、指纹验证、语音验证，验证问题验证中的一个或多个的任意组合。\n\n[0102]与现有技术相比，本发明实施例提出了一种签核发起用户管理方法和设备，应用于电子签核过程，其中，该签核发起用户管理方法包括：当接收到签核发起用户的签核请求时，基于所述签核请求确定待发起的签核申请的级别；根据签核申请的级别对所述签核发起用户进行验证；当验证通过时，允许所述签核发起用户基于所述签核请求发起签核申请。以此，通过上述方法，通过对签核发起用户进行验证，提高了电子签核过程的安全性，保障了用户的使用体验。\n\n[0103]本领域技术人员可以理解附图只是一个优选实施场景的示意图，附图中的模块或流程并不一定是实施本发明所必须的。\n\n[0104]本领域技术人员可以理解实施场景中的装置中的模块可以按照实施场景描述进行分布于实施场景的装置中，也可以进行相应变化位于不同于本实施场景的一个或多个装置中。上述实施场景的模块可以合并为一个模块，也可以进一步拆分成多个子模块。\n\n[0105]上述本发明序号仅仅为了描述，不代表实施场景的优劣。\n\n[0106]以上公开的仅为本发明的几个具体实施场景，但是，本发明并非局限于此，任何本领域的技术人员能思之的变化都应落入本发明的保护范围。\n\n', '技术领域\n\n[0001]本发明涉及网络技术领域，特别涉及一种签核发起用户管理方法和设备。\n\n背景技术\n\n[0002]在现有技术中，文件的签核一般是人工来进行的，在具体的过程中，需要将相应的文件打印出来，并以人工的方式传递给各个需要签核的签核人处，操作流程繁琐，费时费力，效率低下；且当某位签核人不在的时候，就会耽搁整个流程的正常进行。\n\n[0003]为此，目前有提到有一种电子签核的方式，但这种方式安全性不高，影响用户的体验。\n\n发明内容\n\n[0004]针对现有技术中的缺陷，本发明提出了一种签核发起用户管理方法和设备，用以克服现有技术中的缺陷，提高电子签核的安全性，保障用户的体验。\n\n[0005]具体的，本发明提出了以下具体的实施例：\n\n[0006]本发明实施例提出了一种签核发起用户管理方法，应用于电子签核过程，包括：\n\n[0007]当接收到签核发起用户的签核请求时，基于所述签核请求确定待发起的签核申请的级别；\n\n[0008]根据签核申请的级别对所述签核发起用户进行验证；\n\n[0009]当验证通过时，允许所述签核发起用户基于所述签核请求发起签核申请。\n\n[0010]进一步的，在一个具体的实施例中，还包括：\n\n[0011]若验证不通过，则中止所述签核发起用户发起签核申请的过程。\n\n[0012]进一步的，在一个具体的实施例中，所述签核申请预设有多个级别，不同的级别对应有不同的验证方式；\n\n[0013]所述根据签核申请的级别对所述签核发起用户进行验证，具体包括：\n\n[0014]基于签核申请的级别确定对应的验证方式；\n\n[0015]基于确定的验证方式对所述签核发起用户进行验证。\n\n[0016]进一步的，在一个具体的实施例中，所述验证方式设置有对应的验证级别；其中，验证级别越高，验证的可靠性越高；签核申请的级别与所述验证级别之间建立有对应关系\n\n[0017]所述基于签核申请的级别确定对应的验证方式，具体包括：\n\n[0018]基于签核申请的级别以及对应关系确定对应的验证级别；\n\n[0019]基于所述确定的验证级别确定对应的验证方式。\n\n[0020]进一步的，在一个具体的实施例中，所述验证方式包括：短信验证码验证、指纹验证、语音验证，验证问题验证中的一个或多个的任意组合。\n\n[0021]本发明实施例还提出了一种签核发起用户管理设备，应用于电子签核过程，包括：\n\n[0022]确定模块，用于当接收到签核发起用户的签核请求时，基于所述签核请求确定待发起的签核申请的级别；\n\n[0023]验证模块，用于根据签核申请的级别对所述签核发起用户进行验证；\n\n[0024]签核发起模块，用于当验证通过时，允许所述签核发起用户基于所述签核请求发起签核申请。\n\n[0025]进一步的，在一个具体的实施例中，还包括：\n\n[0026]中止模块，用于当验证不通过时，中止所述签核发起用户发起签核申请的过程。\n\n[0027]进一步的，在一个具体的实施例中，所述签核申请预设有多个级别，不同的级别对应有不同的验证方式；\n\n[0028]所述验证模块，具体用于：\n\n[0029]基于签核申请的级别确定对应的验证方式；\n\n[0030]基于确定的验证方式对所述签核发起用户进行验证。\n\n[0031]进一步的，在一个具体的实施例中，所述验证方式设置有对应的验证级别；其中，验证级别越高，验证的可靠性越高；签核申请的级别与所述验证级别之间建立有对应关系\n\n[0032]所述验证模块基于签核申请的级别确定对应的验证方式，具体包括：\n\n[0033]基于签核申请的级别以及对应关系确定对应的验证级别；\n\n[0034]基于所述确定的验证级别确定对应的验证方式。\n\n[0035]进一步的，在一个具体的实施例中，所述验证方式包括：短信验证码验证、指纹验证、语音验证，验证问题验证中的一个或多个的任意组合。\n\n[0036]与现有技术相比，本发明实施例提出了一种签核发起用户管理方法和设备，应用于电子签核过程，其中，该签核发起用户管理方法包括：当接收到签核发起用户的签核请求时，基于所述签核请求确定待发起的签核申请的级别；根据签核申请的级别对所述签核发起用户进行验证；当验证通过时，允许所述签核发起用户基于所述签核请求发起签核申请。以此，通过上述方法，通过对签核发起用户进行验证，提高了电子签核过程的安全性，保障了用户的使用体验。\n\n附图说明\n\n[0037]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0038]图1为本发明实施例提出的一种签核发起用户管理方法流程示意图；\n\n[0039]图2为本发明实施例提出的一种对签核发起用户进行验证的方法流程示意图；\n\n[0040]图3为本发明实施例提出的一种签核发起用户管理设备的结构示意图；\n\n[0041]图4为本发明实施例提出的一种签核发起用户管理设备的结构示意图。\n\n具体实施方式\n\n[0042]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。通常在此处附图中描述和出示的本发明实施例的组件可以以各种不同的配置来布置和设计。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0043]针对现有技术中的缺陷，本发明人发现在实际的应用中，签核发起用户出现的安全问题较大，为此，本发明提出了一种签核发起用户管理方法和设备，应用于电子签核过程，用以提高电子签核过程的安全性。\n\n[0044]具体的，本发明提出了以下具体的实施例：\n\n[0045]实施例1\n\n[0046]本发明实施例1提出了一种签核发起用户管理方法，应用于电子签核过程，如图1所示，包括以下步骤：\n\n[0047]步骤101、当接收到签核发起用户的签核请求时，基于所述签核请求确定待发起的签核申请的级别；\n\n[0048]步骤102、根据签核申请的级别对所述签核发起用户进行验证；\n\n[0049]步骤103、当验证通过时，允许所述签核发起用户基于所述签核请求发起签核申请。\n\n[0050]具体的，在此通过一个具体的例子来对签核过程进行说明，在一个具体的实施例中，例如签核请求可以为关于请假的签核请求，某公司的员工A想向公司请假，为此需要发起一个关于请假的签核请求，在该发起签核的过程中，员工A即为签核发起用户。\n\n[0051]而除了关于请假的签核请求以外，签核请求还可以有很多其他的实施例，例如关于报销的签核请求，以及关于升迁命令的签核请求等等，而对应的，发起签核过程的用户(也即发送签核请求的用户)即为签核发起用户。\n\n[0052]而在收到签核请求之后，会确定签核请求所对应的签核申请，仍以上述为例来进行说明，关于请假的签核请求所对应的签核申请也即是关于请假的签核申请，当然其他的签核请求对应有其他的签核申请。\n\n[0053]而具体的签核申请对应有不同的级别，具体的，在一个具体的实施例中，可以设置为级别对应有权限或者重要性，具体的，对应关系可以设置为级别越高，对应的权限越大，或者重要性越高，例如相比较与请假的级别，关于公司内部的人事任免的签核申请的级别会相应的高一些。\n\n[0054]而在一个具体的实施例中，确定待发起的签核申请的级别之后，会进行验证，也即执行步骤102、确定待发起的签核申请的级别。\n\n[0055]具体的，所述签核申请预设有多个级别，不同的级别对应有不同的验证方式；\n\n[0056]由此，如图2所示，所述根据签核申请的级别对所述签核发起用户进行验证，具体包括：\n\n[0057]步骤1021、基于签核申请的级别确定对应的验证方式；\n\n[0058]步骤1022、基于确定的验证方式对所述签核发起用户进行验证。\n\n[0059]在此，通过一个具体的实施例来对步骤102进行说明，例如签核申请预设有4个级别，分别命名为级别1、级别2、级别3、级别4；而不同的级别对应有不同的验证方式，例如级别1对应的验证方式1、级别2对应验证方式2、级别3对应验证方式3、级别4对应验证方式4。\n\n[0060]由此具体的验证过程为，首先确定签核申请的级别，例如确定签核申请的级别为级别3，然后基于所确定的签核申请的级别确定验证方式，仍以上述为例，则验证方式为验证方式3，后续具体的验证则是通过验证方式3来对签核发起用户进行验证。\n\n[0061]而所述验证方式可以包括：短信验证码验证、指纹验证、语音验证，验证问题验证中的一个或多个的任意组合。\n\n[0062]以短信验证码验证为例，在进行验证时，会发送对应的验证码到签核发起用户所在的手机上，签核发起用户需要在指定的区域填写所收到的验证码，以完成验证，如此保证签核发起人是本人；而若是验证码输入错误，或者在指定时间范围内没有输入正确的验证码，则验证不通过。\n\n[0063]此外，关于指纹验证，可以在进行验证时，需要签核发起用户在指定的设备上按压自身的一个或多个手指的指纹，在获取到指纹后与预先存储的指纹进行匹配，若能匹配上，则验证通过；若无法匹配上，则验证不通过。\n\n[0064]关于语音验证，在一个具体的实施例中，需要在验证时签核发起用户即时读入一定文字的语音，例如该一定文字可以为：“我是xx”，在获取到语音后与预先存储的语音进行匹配，若能匹配上，则验证通过；若无法匹配上，则验证不通过。\n\n[0065]关于验证问题验证，在一个具体的实施例中，可以事先为签核发起用户分配验证问题以及对应的验证答案，当然也可以是签核发起用户自身设置的，后续基于验证问题进行回答，若回答的与对应的验证答案一致，则验证通过；反之，则验证不通过。\n\n[0066]除了上述所述的几种具体的验证方式以外，还可以对签核发起用户所在的登录环境进行验证，通过对登录环境的验证，来对签核发起用户进行验证。具体的，例如可以有以下几种具体的验证方式：\n\n[0067]方式1，获取所述签核发起用户发送登录请求时的登录IP；\n\n[0068]判断所述登录IP是否存在于预先存储的已验证IP数据库中；\n\n[0069]若判断结果为是，则验证通过；\n\n[0070]若判断结果为否，则验证不通过。\n\n[0071]在方式1中，具体的验证是基于IP来进行验证的，在签核发起用户发送登录请求时，获取到所在环境的IP(Internet Protocol,网络之间互连的协议)，而在事先，有基于分配的一批IP或者已验证过一批IP来形成了已验证IP数据库，由此进行判断所获取到的IP是否存在于已验证IP数据库中；若判断结果为是，则可以确定验证通过；反之，则可以确定验证不通过。\n\n[0072]方式2，获取所述签核发起用户发送登录请求的终端的终端信息；\n\n[0073]判断所述终端信息是否存在于预先存储的已验证终端信息数据库中；\n\n[0074]若判断结果为是，则确定验证通过；\n\n[0075]若判断结果为否，则确定验证不通过。\n\n[0076]方式2中的方式中，在事先会验证或者授权一批终端作为已验证终端，其对应的终端信息则形成已验证终端信息数据库，具体的终端信息可以包括有终端的标识，为终端设置的识别码等等。\n\n[0077]后续在进行验证时，提取到签核发起用户发送登录请求的终端的终端信息，并与已验证终端信息数据库中所存储的已验证终端信息进行匹配，若能匹配上，则说明签核发起用户所在的登录环境为已验证登录环境，也即确定验证通过；反之，则可以确定签核发起用户所在的登录环境不是已验证登录环境，即验证不通过。\n\n[0078]在一个具体的应用场景中，除了分别对IP以及终端进行验证以外，还可以结合两者进行组合验证，只有当IP与终端都匹配上时，才验证通过；具体的验证过程可以基于实际的需要以及实际的环境进行设置，除了IP以及终端进行验证以外，还可以设置其他的验证方式，以及其他的组合验证方式。\n\n[0079]此外，在一个具体的实施例中，所述验证方式设置有对应的验证级别；其中，验证级别越高，验证的可靠性越高；签核申请的级别与所述验证级别之间建立有对应关系。\n\n[0080]由此，步骤1021、也即所述基于签核申请的级别确定对应的验证方式，具体包括：\n\n[0081]步骤11、基于签核申请的级别以及对应关系确定对应的验证级别；\n\n[0082]步骤12、基于所述确定的验证级别确定对应的验证方式。\n\n[0083]具体的，在一个实际的实施例中，除了验证方式基于不同级别的签核申请的不同而不同以外；验证方式的级别还根据签核申请的级别的不同而不同，具体的，验证方式的级别与签核申请的级别是正相关的，也即签核申请的级别越高，对应的验证方式的级别也越高，其中，级别越高，说明重要性越高。\n\n[0084]具体的，当步骤102中的验证通过时，可以允许签核发起用户正常发起签核申请的流程，而若是验证不通过，则中止所述签核发起用户发起签核申请的过程。也即无法发起签核申请的过程。\n\n[0085]本发明实施例1提出了一种签核发起用户管理方法，应用于电子签核过程，包括：当接收到签核发起用户的签核请求时，基于所述签核请求确定待发起的签核申请的级别；根据签核申请的级别对所述签核发起用户进行验证；当验证通过时，允许所述签核发起用户基于所述签核请求发起签核申请。以此，通过上述方法，通过对签核发起用户进行验证，提高了电子签核过程的安全性，保障了用户的使用体验。\n\n[0086]实施例2\n\n[0087]为了对本发明进行进一步的说明，本发明实施例2还公开了一种签核发起用户管理设备，应用于电子签核过程，如图3所示，包括：\n\n[0088]确定模块201，用于当接收到签核发起用户的签核请求时，基于所述签核请求确定待发起的签核申请的级别；\n\n[0089]验证模块202，用于根据签核申请的级别对所述签核发起用户进行验证；\n\n[0090]签核发起模块203，用于当验证通过时，允许所述签核发起用户基于所述签核请求发起签核申请。\n\n[0091]具体的，如图4所示，在一个具体的实施例中，签核发起用户管理设备还可以包括：\n\n[0092]中止模块204，用于当验证不通过时，中止所述签核发起用户发起签核申请的过程。\n\n[0093]具体的，在一个具体的实施例中，所述签核申请预设有多个级别，不同的级别对应有不同的验证方式；\n\n[0094]所述验证模块202，具体用于：\n\n[0095]基于签核申请的级别确定对应的验证方式；\n\n[0096]基于确定的验证方式对所述签核发起用户进行验证。\n\n[0097]在一个具体的实施例中，，所述验证方式设置有对应的验证级别；其中，验证级别越高，验证的可靠性越高；签核申请的级别与所述验证级别之间建立有对应关系\n\n[0098]所述验证模块202基于签核申请的级别确定对应的验证方式，具体包括：\n\n[0099]基于签核申请的级别以及对应关系确定对应的验证级别；\n\n[0100]基于所述确定的验证级别确定对应的验证方式。\n\n[0101]在一个具体的实施例中，所述验证方式包括：短信验证码验证、指纹验证、语音验证，验证问题验证中的一个或多个的任意组合。\n\n[0102]与现有技术相比，本发明实施例提出了一种签核发起用户管理方法和设备，应用于电子签核过程，其中，该签核发起用户管理方法包括：当接收到签核发起用户的签核请求时，基于所述签核请求确定待发起的签核申请的级别；根据签核申请的级别对所述签核发起用户进行验证；当验证通过时，允许所述签核发起用户基于所述签核请求发起签核申请。以此，通过上述方法，通过对签核发起用户进行验证，提高了电子签核过程的安全性，保障了用户的使用体验。\n\n[0103]本领域技术人员可以理解附图只是一个优选实施场景的示意图，附图中的模块或流程并不一定是实施本发明所必须的。\n\n[0104]本领域技术人员可以理解实施场景中的装置中的模块可以按照实施场景描述进行分布于实施场景的装置中，也可以进行相应变化位于不同于本实施场景的一个或多个装置中。上述实施场景的模块可以合并为一个模块，也可以进一步拆分成多个子模块。\n\n[0105]上述本发明序号仅仅为了描述，不代表实施场景的优劣。\n\n[0106]以上公开的仅为本发明的几个具体实施场景，但是，本发明并非局限于此，任何本领域的技术人员能思之的变化都应落入本发明的保护范围。\n\n');
INSERT INTO `os_patent_instruction_text` VALUES (11139, 24077, '技术领域\n\n[0001]本发明涉及互联网通信领域，具体而言，涉及一种签核文件获取及上传方法、装置。\n\n背景技术\n\n[0002]企业中，经常会有诸多事务需要多级审批，需要使用签核文件。比如“物品申购”、“借款单”、“差旅费申报”等。需要申请人填写申请单据，然后通过单据各级审批人进行审批，单据审批完毕，出纳人员将单据打印出来，申请人在打印出来的单据上签字、报销，再交由出纳人员将手工签字的单据和实际发票订在一起，保留一份原始凭证，同时在系统上保留一份电子化的单据，方便以后查询、汇总。在将签核文件管理至系统的过程中，一般采用扫描或拍照等留存方式，扫描的方式效率较低，需要借助扫描仪器，在移动互联网时代明显造成较大的不便，而采用拍照的方式，由于操作者的拍照水平不同，拍摄的照片有可能不能满足留存的要求，后期需要重新拍照，造成流程上的反复，影响工作效率。\n\n发明内容\n\n[0003]有鉴于此，本发明实施例的目的在于提供一种签核文件获取及上传方法、装置，以改善上述的问题。\n\n[0004]第一方面，本发明实施例提供的一种签核文件获取及上传方法，应用于与服务端通信连接的客户端，所述签核文件获取及上传方法包括：\n\n[0005]响应用户的拍摄操作，在预设的时间内连续拍摄预设张数的签核文件的图像；\n\n[0006]计算每一张所述图像的清晰度；\n\n[0007]将多张所述图像的清晰度进行比较，将多张图像中清晰度最高的图像上传至所述服务端。\n\n[0008]进一步地，所述计算每一张所述图像的清晰度的步骤包括：\n\n[0009]识别图像中的关键字；\n\n[0010]根据识别到的关键字调取所述关键字对应的签核文件模板；\n\n[0011]根据所述图像中的关键字与所述签核文件模板中的关键字的位置关系和大小比例，截取所述图像中与所述签核文件模板呈比例对应的区域；\n\n[0012]将截取后的图像放大或缩小至与所述签核文件模板相同的比例大小；\n\n[0013]将截取后的图像中特定的区域与所述签核文件模板对应的区域进行对比，计算该特定区域的吻合度，通过所述吻合度得到清晰度。\n\n[0014]进一步地，所述特定的区域为所述图像中的文字区域。\n\n[0015]进一步地，所述签核文件获取及上传方法还包括：\n\n[0016]判断所述多张图像中清晰度最高的图像的清晰度是否大于预设的第一阈值，当所述多张图像中清晰度最高的图像的清晰度大于预设的第一阈值时，将所述清晰度最高的图像上传至所述服务端。\n\n[0017]进一步地，当所述多张图像中清晰度最高的图像的清晰度小于或等于预设的第一阈值时，发出提示信息，以提示用户重新进行拍照。\n\n[0018]第二方面，本发明实施例还提供了一种签核文件获取及上传装置，应用于与服务端通信连接的客户端，所述签核文件获取及上传装置包括：\n\n[0019]拍摄模块，用于响应用户的拍摄操作，在预设的时间内连续拍摄预设张数的签核文件的图像；\n\n[0020]计算模块，用于计算每一张所述图像的清晰度；\n\n[0021]比较模块，用于比较多张所述图像的清晰度；\n\n[0022]上传模块，用于将多张图像中清晰度最高的图像上传至所述服务端。\n\n[0023]进一步地，所述装置还包括识别模块、调取模块、截取模块及缩放模块，其中，\n\n[0024]所述识别模块，用于识别所述图像中的关键字；\n\n[0025]所述调取模块，用于根据识别到的关键字调取所述关键字对应的签核文件模板；\n\n[0026]所述截取模块，用于根据所述图像中的关键字与所述签核文件模板中的关键字的位置关系和大小比例，截取所述图像中与所述签核文件模板呈比例对应的区域；\n\n[0027]所述缩放模块，用于将截取后的图像放大或缩小至与所述签核文件模板相同的比例大小；\n\n[0028]所述计算模块，用于将截取后的图像中特定的区域与所述签核文件模板对应的区域进行对比，计算该特定区域的吻合度，所述吻合度对应清晰度。\n\n[0029]进一步地，所述特定的区域为所述图像中的文字区域。\n\n[0030]进一步地，所述装置还包括判断模块，用于判断所述多张图像中清晰度最高的图像的清晰度是否大于预设的第一阈值，所述上传模块用于当所述多张图像中清晰度最高的图像的清晰度大于预设的第一阈值时，将所述清晰度最高的图像上传至所述服务端。\n\n[0031]进一步地，所述装置还包括提示模块，用于当所述多张图像中清晰度最高的图像的清晰度小于或等于预设的第一阈值时，发出提示信息，以提示用户重新进行拍照。\n\n[0032]本发明提供了的签核文件获取及上传方法、装置，所述签核文件获取及上传方法包括：响应用户的拍摄操作，在预设的时间内拍摄预设张数的签核文件的图像；计算每一张所述图像的清晰度；将多张所述图像的清晰度进行比较，将多张图像中清晰度最高的图像上传至所述服务端。本发明通过对客户端连续获取的每一张图像的清晰度进行判断，挑选出清晰度最高的图像上传至服务端，提高了拍摄的签核文件图像的质量，以保证用户上传的签核文件图像符合要求。\n\n[0033]为使本发明的上述目的、特征和优点能更明显易懂，下文特举较佳实施例，并配合所附附图，作详细说明如下。\n\n附图说明\n\n[0034]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0035]图1是本发明较佳实施例提供的服务端与客户端进行交互的示意图。\n\n[0036]图2是本发明较佳实施例提供的客户端的方框示意图。\n\n[0037]图3是本发明软装置的功能模块示意图。\n\n[0038]图4是本发明较佳实施例提供的签核文件获取及上传方法的流程图。\n\n[0039]图5是本发明较佳实施例提供的签核文件获取及上传方法中子步骤的流程图。\n\n[0040]图标：服务端100、客户端200、签核文件获取及上传装置210、拍摄模块221、识别模块222、调取模块223、截取模块224、缩放模块225、计算模块226、比较模块227、判断模块228、上传模块229、提示模块230、存储器211、存储控制器212、处理器213、外设接口214、输入输出单元215、音频单元216、显示单元217、射频单元218、通信单元219、图像获取单元220、网络300、应用程序400。\n\n具体实施方式\n\n[0041]为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。通常在此处附图中描述和示出的本发明实施例的组件可以以各种不同的配置来布置和设计。\n\n[0042]因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0043]应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。\n\n[0044]本发明实施例提供的签核文件获取及上传方法、装置应用于与多个客户端相互通信的服务端。如图1所示，是本发明较佳实施例提供的服务端100与至少一客户端200通信的交互示意图。所述服务端100可通过网络300与所述客户端200进行通信，以实现服务端100与客户端200之间的数据通信或交互。所述服务端100可以提供至少一个适用于各种操作系统的应用程序(Application，APP)400的安装包供所述客户端200下载。所述客户端200通过所述网络300访问所述服务端100后，可通过所述网络300从服务端100下载适用于该客户端200的操作系统的应用程序400的安装包，以将所述应用程序400安装到所述客户端200中。\n\n[0045]本实施例中，所述服务端100可以是，但不限于，web(网站)服务器、ftp(filetransfer protocol，文件传输协议)服务器等。所述客户端200可以是，但不限于，智能手机、个人电脑(personal computer，PC)、平板电脑、个人数字助理(personal digitalassistant，PDA)、移动上网设备(mobile Internet device，MID)等。所述网络300可以是，但不限于，有线网络或无线网络。所述客户端200的操作系统可以是，但不限于，安卓(Android)系统、IOS(iPhone operating system)系统、Windows phone系统、Windows系统等。所述应用程序400可以是服务端100提供的任何可供客户端200自定义下载并安装的应用程序。\n\n[0046]请参照图2，是图1所示的客户端200的方框示意图。所述客户端200包括签核文件获取及上传装置210、存储器211、存储控制器212、处理器213、外设接口214、输入输出单元215、音频单元216、显示单元217、射频单元218以及通信单元219。\n\n[0047]所述存储器211、存储控制器212、处理器213、外设接口214、输入输出单元215、音频单元216、显示单元217、射频单元218以及通信单元219各元件相互之间直接或间接地电性连接，以实现数据的传输或交互。例如，这些元件相互之间可通过一条或多条通讯总线或信号线实现电性连接。所述签核文件获取及上传装置210包括至少一个可以软件或固件(firmware)的形式存储于所述存储器211中或固化在所述客户端200的操作系统(operating system，OS)中的软件功能模块。所述存储器211存储有所述客户端200从所述服务端100中下载并安装的应用程序400。所述处理器213用于执行所述存储器211中存储的可执行模块，例如所述签核文件获取及上传装置210所包括的软件功能模块及计算机程序等。\n\n[0048]其中，所述存储器211可以是，但不限于，随机存取存储器(Random AccessMemory，RAM)，只读存储器(Read Only Memory，ROM)，可编程只读存储器(ProgrammableRead-Only Memory，PROM)，可擦除只读存储器(Erasable Programmable Read-OnlyMemory，EPROM)，电可擦除只读存储器(Electric Erasable Programmable Read-OnlyMemory，EEPROM)等。其中，存储器211用于存储程序，处理器213在接收到执行指令后，执行所述程序。所述处理器213以及其他可能的组件对存储器211的访问可在所述存储控制器212的控制下进行。\n\n[0049]所述处理器213可能是一种集成电路芯片，具有信号的处理能力。上述的处理器可以是通用处理器，包括中央处理器(Central Processing Unit，CPU)、网络处理器(NetworkProcessor，NP)等；还可以是数字信号处理器(DSP))、专用集成电路(ASIC)、现成可编程门阵列(FPGA)或者其他可编程逻辑器件、分立门或者晶体管逻辑器件、分立硬件组件。可以实现或者执行本发明实施例中的公开的各方法、步骤及逻辑框图。通用处理器可以是微处理器或者该处理器也可以是任何常规的处理器等。所述外设接口114将各种输入/输出装置(例如输入输出单元215、音频单元216、显示单元217以及射频单元218)耦合至所述处理器213以及所述存储器211。在一些实施例中，外设接口214，处理器213以及存储控制器212可以在单个芯片中实现。在其他一些实例中，他们可以分别由独立的芯片实现。\n\n[0050]所述输入输出单元215用于提供给用户输入数据实现用户与所述客户端200的交互。所述输入输出单元215可以是，但不限于，鼠标和键盘等。\n\n[0051]所述音频单元216向用户提供音频接口，其可包括一个或多个麦克风、一个或者多个扬声器以及音频电路。\n\n[0052]所述显示单元217在所述客户端200与用户之间提供一个交互界面(例如用户操作界面)或用于显示图像数据。在本实施例中，所述显示单元217可以是液晶显示器或触控显示器。若为触控显示器，其可为支持单点和多点触控操作的电容式触控屏或电阻式触控屏等。支持单点和多点触控操作是指触控显示器能感应到来自该触控显示器上一个或多个位置处产生的触控操作，并将该感应到的触控操作交由处理器进行计算和处理。\n\n[0053]所述射频单元218用于接收以及发送无线电波信号(如电磁波)，实现无线电波与电信号的相互转换，从而实现所述客户端200与所述网络300或者其他通信设备之间的无线通信。\n\n[0054]所述通信单元219用于通过所述网络300与所述服务端100的第一通信单元113建立连接，从而实现所述服务端100与客户端200之间的通信连接。例如，该通信单元219可以利用所述射频单元218发送的射频信号连接到网络300，进而通过网络300与服务端的第一通信单元113建立通信连接。\n\n[0055]所述图像获取单元220用于获取图像信息，在本实施例中，图像获取单元220可以是摄像头。\n\n[0056]请参照图3，是本发明较佳实施例提供的应用于图1所示的服务端100的签核文件获取及上传装置210的功能模块架构示意图。所述签核文件获取及上传装置210包括拍摄模块221、识别模块222、调取模块223、截取模块224、缩放模块225、计算模块226、比较模块227、判断模块228、上传模块229及提示模块230。\n\n[0057]其中，所述拍摄模块221用于响应用户的拍摄操作，在预设的时间内连续拍摄预设张数的签核文件的图像。\n\n[0058]用户触发拍照命令时，比如用户在显示单元217上点击拍摄图标，拍摄模块221响应该拍照操作的命令，控制图像获取单元220在一段时间内连续地拍摄多张图像，该时间为预先设定的时间，比如设定时间为0.5s，拍摄张数为10张，则图像获取单元220在拍摄模块221的控制下在0.5s内连续拍照10张。\n\n[0059]所述计算模块226用于计算每一张图像的清晰度。具体的，先通过所述识别模块222识别出图像中的关键字，比如识别到“申购单”“报销单”等关键字。易于理解的，关键字还可以是具有特定意义的图案。通过关键字，调取模块223调取所述关键字对应的签核文件模板。在签核文件获取及上传装置210的存储器211中，预先存储有多个签核文件模板，每一个签核文件模板均对应不同的关键字，通过关键字调取相应的模板。签核文件模板调取后，截取模块224根据所述图像中的关键字与所述签核文件模板中的关键字的位置关系和大小比例，截取所述图像中与所述签核文件模板呈比例对应的区域。由于用户对签核文件进行拍照的位置和角度不同，图像中签核文件的位置出现在图像中的位置也不同，为了便于后期的对比计算，截取模块224选择关键字为参照对象，先根据图像上的关键字的位置确定一个参考位置，再根据图像上的关键字与签核文件模板中的关键字的比例关系，截取与签核文件模板呈比例大小的区域。\n\n[0060]截取模块224截取图像之后，缩放模块225将截取后的图像放大或缩小至与所述签核文件模板相同的比例大小，即缩放后的图像的大小与签核文件模板的大小相同。\n\n[0061]计算模块226将截取后的图像中特定的区域与所述签核文件模板对应的区域进行对比，计算该特定区域的吻合度，所述吻合度对应清晰度。具体的，计算模块226选定的特定的区域为图像中的文字区域，更加具有针对性，图像中的文字和签核文件模板中的文字的吻合度在达到预先规定的标准时，表明图像为清晰度较高的图像，吻合度即对应清晰度，例如可以规定吻合度大于70％时，对应清晰度为70，本实施例对吻合度与清晰度的对应关系不做限定。\n\n[0062]此外，在其他实施例中，清晰度的计算还可以根据点阵来计算，比如将图像上的每行数据的像素点的亮度作为一组，计算每行数据各组亮度值的最大值、最小值和平均值，以及亮度值的最大值和平均值的平方和、最小值和平均值的平方和，将各组的平方和相加，选取预定数量的平方和的平均值，即得到清晰度。另外，还可以通过计算图片的像素数来计算清晰度值，设图片的横向有X个像素点，纵向有Y个像素点，那么整个图片有Z＝X×Y个像素点。本发明实施例对清晰度的计算方法不做限定。\n\n[0063]所述比较模块227用于比较多张所述图像的清晰度，以挑选出清晰度最高的图像。\n\n[0064]所述判断模块228用于判断所述多张图像中清晰度最高的图像的清晰度是否大于预设的第一阈值。\n\n[0065]判断模块228预先存储有一预设的第一阈值，在计算模块226计算得到图像的清晰度后，判断模块228将计算得到的清晰度与预设的第一阈值所代表的清晰度做比较，例如可以设置第一阈值为70。\n\n[0066]所述上传模块229用于将多张图像中清晰度最高的图像上传至所述服务端100。为了保证上传的图像更加符合要求，当所述多张图像中清晰度最高的图像的清晰度大于预设的第一阈值时，上传模块229将所述清晰度最高的图像上传至所述服务端100。所述提示模块230用于当所述多张图像中清晰度最高的图像的清晰度小于或等于预设的第一阈值时，发出提示信息，以提示用户重新进行拍照，直到图像符合要求为止。\n\n[0067]本发明提供的签核文件获取及上传装置210通过拍摄模块221获得多张签核文件图像，计算模块226计算各图像的清晰度，比较模块227比较得到清晰度最高的图像，将清晰度最高的图像发送至服务端100，提高了拍摄的签核文件图像的质量，以保证用户上传的签核文件图像符合要求。\n\n[0068]请参照图4，是本发明实施例提供的应用于图1所示客户端200的签核文件获取及上传方法的流程图，该签核文件获取及上传方法包括以下步骤：\n\n[0069]步骤S110，响应用户的拍摄操作，在预设的时间内连续拍摄预设张数的签核文件的图像。\n\n[0070]在本实施例中，该步骤S110可以通过拍摄模块221执行。\n\n[0071]步骤S120，计算每一张所述图像的清晰度。\n\n[0072]在本实施例中，该步骤可以通过计算模块226执行。请参照图5，该步骤S120还可以包括以下子步骤：\n\n[0073]步骤S121，识别图像中的关键字。\n\n[0074]在本实施例中，该步骤S121可以通过识别模块222执行。\n\n[0075]步骤S122，根据识别到的关键字调取关键字对应的签核文件模板。\n\n[0076]在本实施例中，该步骤S122可以通过调取模块223执行得到。\n\n[0077]步骤S123，根据图像中的关键字与签核文件模板中的关键字的位置关系和大小比例，截取图像中与签核文件模板呈比例对应的区域。\n\n[0078]在本实施例中，该步骤S123可以通过截取模块224执行。\n\n[0079]步骤S124，将截取后的图像放大或缩小至与所述签核文件模板相同的比例大小。\n\n[0080]在本实施例中，该步骤S124可以通过缩放模块225执行。\n\n[0081]步骤S125，将截取后的图像中特定的区域与所述签核文件模板对应的区域进行对比，计算该特定区域的吻合度，所述吻合度对应清晰度。\n\n[0082]在本实施例中，步骤S125可以通过计算模块226执行。\n\n[0083]步骤S130，判断所述多张图像中清晰度最高的图像的清晰度是否大于预设的第一阈值。如果大于第一阈值，则执行步骤S140，如果小于或等于，则执行步骤S150。\n\n[0084]在本实施例中，该步骤S130可以通过判断模块228执行。\n\n[0085]步骤S140，将多张图像中清晰度最高的图像上传至所述服务端。\n\n[0086]本实施例中，该步骤S140可以通过上传模块229执行。\n\n[0087]步骤S150，发出提示信息，以提示用户重新进行拍照。\n\n[0088]本实施例中，该步骤S150可以通过提示模块230执行。\n\n[0089]需要说明的是，本实施例中，步骤S120执行之后，可以不执行步骤S130，而直接执行步骤S140。\n\n[0090]综上所述，本发明实施例提供了一种签核文件获取及上传方法、装置。该签核文件获取及上传方法包括：响应用户的拍摄操作，在预设的时间内拍摄预设张数的签核文件的图像；计算每一张所述图像的清晰度；将多张所述图像的清晰度进行比较，将多张图像中清晰度最高的图像上传至所述服务端。本发明通过对客户端连续获取的每一张图像的清晰度进行判断，挑选出清晰度最高的图像上传至服务端，提高了拍摄的签核文件图像的质量，以保证用户上传的签核文件图像符合要求。\n\n[0091]在本申请所提供的几个实施例中，应该理解到，所揭露的装置和方法，也可以通过其它的方式实现。以上所描述的装置实施例仅仅是示意性的，例如，附图中的流程图和框图显示了根据本发明的多个实施例的装置、方法和计算机程序产品的可能实现的体系架构、功能和操作。在这点上，流程图或框图中的每个方框可以代表一个模块、程序段或代码的一部分，所述模块、程序段或代码的一部分包含一个或多个用于实现规定的逻辑功能的可执行指令。也应当注意，在有些作为替换的实现方式中，方框中所标注的功能也可以以不同于附图中所标注的顺序发生。例如，两个连续的方框实际上可以基本并行地执行，它们有时也可以按相反的顺序执行，这依所涉及的功能而定。也要注意的是，框图和/或流程图中的每个方框、以及框图和/或流程图中的方框的组合，可以用执行规定的功能或动作的专用的基于硬件的系统来实现，或者可以用专用硬件与计算机指令的组合来实现。另外，在本发明各个实施例中的各功能模块可以集成在一起形成一个独立的部分，也可以是各个模块单独存在，也可以两个或两个以上模块集成形成一个独立的部分。\n\n[0092]所述功能如果以软件功能模块的形式实现并作为独立的产品销售或使用时，可以存储在一个计算机可读取存储介质中。基于这样的理解，本发明的技术方案本质上或者说对现有技术做出贡献的部分或者该技术方案的部分可以以软件产品的形式体现出来，该计算机软件产品存储在一个存储介质中，包括若干指令用以使得一台计算机设备(可以是个人计算机，服务器，或者网络设备等)执行本发明各个实施例所述方法的全部或部分步骤。而前述的存储介质包括：U盘、移动硬盘、只读存储器(ROM，Read-Only Memory)、随机存取存储器(RAM，Random Access Memory)、磁碟或者光盘等各种可以存储程序代码的介质。需要说明的是，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。\n\n[0093]以上所述仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。\n\n', '技术领域\n\n[0001]本发明涉及互联网通信领域，具体而言，涉及一种签核文件获取及上传方法、装置。\n\n背景技术\n\n[0002]企业中，经常会有诸多事务需要多级审批，需要使用签核文件。比如“物品申购”、“借款单”、“差旅费申报”等。需要申请人填写申请单据，然后通过单据各级审批人进行审批，单据审批完毕，出纳人员将单据打印出来，申请人在打印出来的单据上签字、报销，再交由出纳人员将手工签字的单据和实际发票订在一起，保留一份原始凭证，同时在系统上保留一份电子化的单据，方便以后查询、汇总。在将签核文件管理至系统的过程中，一般采用扫描或拍照等留存方式，扫描的方式效率较低，需要借助扫描仪器，在移动互联网时代明显造成较大的不便，而采用拍照的方式，由于操作者的拍照水平不同，拍摄的照片有可能不能满足留存的要求，后期需要重新拍照，造成流程上的反复，影响工作效率。\n\n发明内容\n\n[0003]有鉴于此，本发明实施例的目的在于提供一种签核文件获取及上传方法、装置，以改善上述的问题。\n\n[0004]第一方面，本发明实施例提供的一种签核文件获取及上传方法，应用于与服务端通信连接的客户端，所述签核文件获取及上传方法包括：\n\n[0005]响应用户的拍摄操作，在预设的时间内连续拍摄预设张数的签核文件的图像；\n\n[0006]计算每一张所述图像的清晰度；\n\n[0007]将多张所述图像的清晰度进行比较，将多张图像中清晰度最高的图像上传至所述服务端。\n\n[0008]进一步地，所述计算每一张所述图像的清晰度的步骤包括：\n\n[0009]识别图像中的关键字；\n\n[0010]根据识别到的关键字调取所述关键字对应的签核文件模板；\n\n[0011]根据所述图像中的关键字与所述签核文件模板中的关键字的位置关系和大小比例，截取所述图像中与所述签核文件模板呈比例对应的区域；\n\n[0012]将截取后的图像放大或缩小至与所述签核文件模板相同的比例大小；\n\n[0013]将截取后的图像中特定的区域与所述签核文件模板对应的区域进行对比，计算该特定区域的吻合度，通过所述吻合度得到清晰度。\n\n[0014]进一步地，所述特定的区域为所述图像中的文字区域。\n\n[0015]进一步地，所述签核文件获取及上传方法还包括：\n\n[0016]判断所述多张图像中清晰度最高的图像的清晰度是否大于预设的第一阈值，当所述多张图像中清晰度最高的图像的清晰度大于预设的第一阈值时，将所述清晰度最高的图像上传至所述服务端。\n\n[0017]进一步地，当所述多张图像中清晰度最高的图像的清晰度小于或等于预设的第一阈值时，发出提示信息，以提示用户重新进行拍照。\n\n[0018]第二方面，本发明实施例还提供了一种签核文件获取及上传装置，应用于与服务端通信连接的客户端，所述签核文件获取及上传装置包括：\n\n[0019]拍摄模块，用于响应用户的拍摄操作，在预设的时间内连续拍摄预设张数的签核文件的图像；\n\n[0020]计算模块，用于计算每一张所述图像的清晰度；\n\n[0021]比较模块，用于比较多张所述图像的清晰度；\n\n[0022]上传模块，用于将多张图像中清晰度最高的图像上传至所述服务端。\n\n[0023]进一步地，所述装置还包括识别模块、调取模块、截取模块及缩放模块，其中，\n\n[0024]所述识别模块，用于识别所述图像中的关键字；\n\n[0025]所述调取模块，用于根据识别到的关键字调取所述关键字对应的签核文件模板；\n\n[0026]所述截取模块，用于根据所述图像中的关键字与所述签核文件模板中的关键字的位置关系和大小比例，截取所述图像中与所述签核文件模板呈比例对应的区域；\n\n[0027]所述缩放模块，用于将截取后的图像放大或缩小至与所述签核文件模板相同的比例大小；\n\n[0028]所述计算模块，用于将截取后的图像中特定的区域与所述签核文件模板对应的区域进行对比，计算该特定区域的吻合度，所述吻合度对应清晰度。\n\n[0029]进一步地，所述特定的区域为所述图像中的文字区域。\n\n[0030]进一步地，所述装置还包括判断模块，用于判断所述多张图像中清晰度最高的图像的清晰度是否大于预设的第一阈值，所述上传模块用于当所述多张图像中清晰度最高的图像的清晰度大于预设的第一阈值时，将所述清晰度最高的图像上传至所述服务端。\n\n[0031]进一步地，所述装置还包括提示模块，用于当所述多张图像中清晰度最高的图像的清晰度小于或等于预设的第一阈值时，发出提示信息，以提示用户重新进行拍照。\n\n[0032]本发明提供了的签核文件获取及上传方法、装置，所述签核文件获取及上传方法包括：响应用户的拍摄操作，在预设的时间内拍摄预设张数的签核文件的图像；计算每一张所述图像的清晰度；将多张所述图像的清晰度进行比较，将多张图像中清晰度最高的图像上传至所述服务端。本发明通过对客户端连续获取的每一张图像的清晰度进行判断，挑选出清晰度最高的图像上传至服务端，提高了拍摄的签核文件图像的质量，以保证用户上传的签核文件图像符合要求。\n\n[0033]为使本发明的上述目的、特征和优点能更明显易懂，下文特举较佳实施例，并配合所附附图，作详细说明如下。\n\n附图说明\n\n[0034]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0035]图1是本发明较佳实施例提供的服务端与客户端进行交互的示意图。\n\n[0036]图2是本发明较佳实施例提供的客户端的方框示意图。\n\n[0037]图3是本发明软装置的功能模块示意图。\n\n[0038]图4是本发明较佳实施例提供的签核文件获取及上传方法的流程图。\n\n[0039]图5是本发明较佳实施例提供的签核文件获取及上传方法中子步骤的流程图。\n\n[0040]图标：服务端100、客户端200、签核文件获取及上传装置210、拍摄模块221、识别模块222、调取模块223、截取模块224、缩放模块225、计算模块226、比较模块227、判断模块228、上传模块229、提示模块230、存储器211、存储控制器212、处理器213、外设接口214、输入输出单元215、音频单元216、显示单元217、射频单元218、通信单元219、图像获取单元220、网络300、应用程序400。\n\n具体实施方式\n\n[0041]为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。通常在此处附图中描述和示出的本发明实施例的组件可以以各种不同的配置来布置和设计。\n\n[0042]因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0043]应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。\n\n[0044]本发明实施例提供的签核文件获取及上传方法、装置应用于与多个客户端相互通信的服务端。如图1所示，是本发明较佳实施例提供的服务端100与至少一客户端200通信的交互示意图。所述服务端100可通过网络300与所述客户端200进行通信，以实现服务端100与客户端200之间的数据通信或交互。所述服务端100可以提供至少一个适用于各种操作系统的应用程序(Application，APP)400的安装包供所述客户端200下载。所述客户端200通过所述网络300访问所述服务端100后，可通过所述网络300从服务端100下载适用于该客户端200的操作系统的应用程序400的安装包，以将所述应用程序400安装到所述客户端200中。\n\n[0045]本实施例中，所述服务端100可以是，但不限于，web(网站)服务器、ftp(filetransfer protocol，文件传输协议)服务器等。所述客户端200可以是，但不限于，智能手机、个人电脑(personal computer，PC)、平板电脑、个人数字助理(personal digitalassistant，PDA)、移动上网设备(mobile Internet device，MID)等。所述网络300可以是，但不限于，有线网络或无线网络。所述客户端200的操作系统可以是，但不限于，安卓(Android)系统、IOS(iPhone operating system)系统、Windows phone系统、Windows系统等。所述应用程序400可以是服务端100提供的任何可供客户端200自定义下载并安装的应用程序。\n\n[0046]请参照图2，是图1所示的客户端200的方框示意图。所述客户端200包括签核文件获取及上传装置210、存储器211、存储控制器212、处理器213、外设接口214、输入输出单元215、音频单元216、显示单元217、射频单元218以及通信单元219。\n\n[0047]所述存储器211、存储控制器212、处理器213、外设接口214、输入输出单元215、音频单元216、显示单元217、射频单元218以及通信单元219各元件相互之间直接或间接地电性连接，以实现数据的传输或交互。例如，这些元件相互之间可通过一条或多条通讯总线或信号线实现电性连接。所述签核文件获取及上传装置210包括至少一个可以软件或固件(firmware)的形式存储于所述存储器211中或固化在所述客户端200的操作系统(operating system，OS)中的软件功能模块。所述存储器211存储有所述客户端200从所述服务端100中下载并安装的应用程序400。所述处理器213用于执行所述存储器211中存储的可执行模块，例如所述签核文件获取及上传装置210所包括的软件功能模块及计算机程序等。\n\n[0048]其中，所述存储器211可以是，但不限于，随机存取存储器(Random AccessMemory，RAM)，只读存储器(Read Only Memory，ROM)，可编程只读存储器(ProgrammableRead-Only Memory，PROM)，可擦除只读存储器(Erasable Programmable Read-OnlyMemory，EPROM)，电可擦除只读存储器(Electric Erasable Programmable Read-OnlyMemory，EEPROM)等。其中，存储器211用于存储程序，处理器213在接收到执行指令后，执行所述程序。所述处理器213以及其他可能的组件对存储器211的访问可在所述存储控制器212的控制下进行。\n\n[0049]所述处理器213可能是一种集成电路芯片，具有信号的处理能力。上述的处理器可以是通用处理器，包括中央处理器(Central Processing Unit，CPU)、网络处理器(NetworkProcessor，NP)等；还可以是数字信号处理器(DSP))、专用集成电路(ASIC)、现成可编程门阵列(FPGA)或者其他可编程逻辑器件、分立门或者晶体管逻辑器件、分立硬件组件。可以实现或者执行本发明实施例中的公开的各方法、步骤及逻辑框图。通用处理器可以是微处理器或者该处理器也可以是任何常规的处理器等。所述外设接口114将各种输入/输出装置(例如输入输出单元215、音频单元216、显示单元217以及射频单元218)耦合至所述处理器213以及所述存储器211。在一些实施例中，外设接口214，处理器213以及存储控制器212可以在单个芯片中实现。在其他一些实例中，他们可以分别由独立的芯片实现。\n\n[0050]所述输入输出单元215用于提供给用户输入数据实现用户与所述客户端200的交互。所述输入输出单元215可以是，但不限于，鼠标和键盘等。\n\n[0051]所述音频单元216向用户提供音频接口，其可包括一个或多个麦克风、一个或者多个扬声器以及音频电路。\n\n[0052]所述显示单元217在所述客户端200与用户之间提供一个交互界面(例如用户操作界面)或用于显示图像数据。在本实施例中，所述显示单元217可以是液晶显示器或触控显示器。若为触控显示器，其可为支持单点和多点触控操作的电容式触控屏或电阻式触控屏等。支持单点和多点触控操作是指触控显示器能感应到来自该触控显示器上一个或多个位置处产生的触控操作，并将该感应到的触控操作交由处理器进行计算和处理。\n\n[0053]所述射频单元218用于接收以及发送无线电波信号(如电磁波)，实现无线电波与电信号的相互转换，从而实现所述客户端200与所述网络300或者其他通信设备之间的无线通信。\n\n[0054]所述通信单元219用于通过所述网络300与所述服务端100的第一通信单元113建立连接，从而实现所述服务端100与客户端200之间的通信连接。例如，该通信单元219可以利用所述射频单元218发送的射频信号连接到网络300，进而通过网络300与服务端的第一通信单元113建立通信连接。\n\n[0055]所述图像获取单元220用于获取图像信息，在本实施例中，图像获取单元220可以是摄像头。\n\n[0056]请参照图3，是本发明较佳实施例提供的应用于图1所示的服务端100的签核文件获取及上传装置210的功能模块架构示意图。所述签核文件获取及上传装置210包括拍摄模块221、识别模块222、调取模块223、截取模块224、缩放模块225、计算模块226、比较模块227、判断模块228、上传模块229及提示模块230。\n\n[0057]其中，所述拍摄模块221用于响应用户的拍摄操作，在预设的时间内连续拍摄预设张数的签核文件的图像。\n\n[0058]用户触发拍照命令时，比如用户在显示单元217上点击拍摄图标，拍摄模块221响应该拍照操作的命令，控制图像获取单元220在一段时间内连续地拍摄多张图像，该时间为预先设定的时间，比如设定时间为0.5s，拍摄张数为10张，则图像获取单元220在拍摄模块221的控制下在0.5s内连续拍照10张。\n\n[0059]所述计算模块226用于计算每一张图像的清晰度。具体的，先通过所述识别模块222识别出图像中的关键字，比如识别到“申购单”“报销单”等关键字。易于理解的，关键字还可以是具有特定意义的图案。通过关键字，调取模块223调取所述关键字对应的签核文件模板。在签核文件获取及上传装置210的存储器211中，预先存储有多个签核文件模板，每一个签核文件模板均对应不同的关键字，通过关键字调取相应的模板。签核文件模板调取后，截取模块224根据所述图像中的关键字与所述签核文件模板中的关键字的位置关系和大小比例，截取所述图像中与所述签核文件模板呈比例对应的区域。由于用户对签核文件进行拍照的位置和角度不同，图像中签核文件的位置出现在图像中的位置也不同，为了便于后期的对比计算，截取模块224选择关键字为参照对象，先根据图像上的关键字的位置确定一个参考位置，再根据图像上的关键字与签核文件模板中的关键字的比例关系，截取与签核文件模板呈比例大小的区域。\n\n[0060]截取模块224截取图像之后，缩放模块225将截取后的图像放大或缩小至与所述签核文件模板相同的比例大小，即缩放后的图像的大小与签核文件模板的大小相同。\n\n[0061]计算模块226将截取后的图像中特定的区域与所述签核文件模板对应的区域进行对比，计算该特定区域的吻合度，所述吻合度对应清晰度。具体的，计算模块226选定的特定的区域为图像中的文字区域，更加具有针对性，图像中的文字和签核文件模板中的文字的吻合度在达到预先规定的标准时，表明图像为清晰度较高的图像，吻合度即对应清晰度，例如可以规定吻合度大于70％时，对应清晰度为70，本实施例对吻合度与清晰度的对应关系不做限定。\n\n[0062]此外，在其他实施例中，清晰度的计算还可以根据点阵来计算，比如将图像上的每行数据的像素点的亮度作为一组，计算每行数据各组亮度值的最大值、最小值和平均值，以及亮度值的最大值和平均值的平方和、最小值和平均值的平方和，将各组的平方和相加，选取预定数量的平方和的平均值，即得到清晰度。另外，还可以通过计算图片的像素数来计算清晰度值，设图片的横向有X个像素点，纵向有Y个像素点，那么整个图片有Z＝X×Y个像素点。本发明实施例对清晰度的计算方法不做限定。\n\n[0063]所述比较模块227用于比较多张所述图像的清晰度，以挑选出清晰度最高的图像。\n\n[0064]所述判断模块228用于判断所述多张图像中清晰度最高的图像的清晰度是否大于预设的第一阈值。\n\n[0065]判断模块228预先存储有一预设的第一阈值，在计算模块226计算得到图像的清晰度后，判断模块228将计算得到的清晰度与预设的第一阈值所代表的清晰度做比较，例如可以设置第一阈值为70。\n\n[0066]所述上传模块229用于将多张图像中清晰度最高的图像上传至所述服务端100。为了保证上传的图像更加符合要求，当所述多张图像中清晰度最高的图像的清晰度大于预设的第一阈值时，上传模块229将所述清晰度最高的图像上传至所述服务端100。所述提示模块230用于当所述多张图像中清晰度最高的图像的清晰度小于或等于预设的第一阈值时，发出提示信息，以提示用户重新进行拍照，直到图像符合要求为止。\n\n[0067]本发明提供的签核文件获取及上传装置210通过拍摄模块221获得多张签核文件图像，计算模块226计算各图像的清晰度，比较模块227比较得到清晰度最高的图像，将清晰度最高的图像发送至服务端100，提高了拍摄的签核文件图像的质量，以保证用户上传的签核文件图像符合要求。\n\n[0068]请参照图4，是本发明实施例提供的应用于图1所示客户端200的签核文件获取及上传方法的流程图，该签核文件获取及上传方法包括以下步骤：\n\n[0069]步骤S110，响应用户的拍摄操作，在预设的时间内连续拍摄预设张数的签核文件的图像。\n\n[0070]在本实施例中，该步骤S110可以通过拍摄模块221执行。\n\n[0071]步骤S120，计算每一张所述图像的清晰度。\n\n[0072]在本实施例中，该步骤可以通过计算模块226执行。请参照图5，该步骤S120还可以包括以下子步骤：\n\n[0073]步骤S121，识别图像中的关键字。\n\n[0074]在本实施例中，该步骤S121可以通过识别模块222执行。\n\n[0075]步骤S122，根据识别到的关键字调取关键字对应的签核文件模板。\n\n[0076]在本实施例中，该步骤S122可以通过调取模块223执行得到。\n\n[0077]步骤S123，根据图像中的关键字与签核文件模板中的关键字的位置关系和大小比例，截取图像中与签核文件模板呈比例对应的区域。\n\n[0078]在本实施例中，该步骤S123可以通过截取模块224执行。\n\n[0079]步骤S124，将截取后的图像放大或缩小至与所述签核文件模板相同的比例大小。\n\n[0080]在本实施例中，该步骤S124可以通过缩放模块225执行。\n\n[0081]步骤S125，将截取后的图像中特定的区域与所述签核文件模板对应的区域进行对比，计算该特定区域的吻合度，所述吻合度对应清晰度。\n\n[0082]在本实施例中，步骤S125可以通过计算模块226执行。\n\n[0083]步骤S130，判断所述多张图像中清晰度最高的图像的清晰度是否大于预设的第一阈值。如果大于第一阈值，则执行步骤S140，如果小于或等于，则执行步骤S150。\n\n[0084]在本实施例中，该步骤S130可以通过判断模块228执行。\n\n[0085]步骤S140，将多张图像中清晰度最高的图像上传至所述服务端。\n\n[0086]本实施例中，该步骤S140可以通过上传模块229执行。\n\n[0087]步骤S150，发出提示信息，以提示用户重新进行拍照。\n\n[0088]本实施例中，该步骤S150可以通过提示模块230执行。\n\n[0089]需要说明的是，本实施例中，步骤S120执行之后，可以不执行步骤S130，而直接执行步骤S140。\n\n[0090]综上所述，本发明实施例提供了一种签核文件获取及上传方法、装置。该签核文件获取及上传方法包括：响应用户的拍摄操作，在预设的时间内拍摄预设张数的签核文件的图像；计算每一张所述图像的清晰度；将多张所述图像的清晰度进行比较，将多张图像中清晰度最高的图像上传至所述服务端。本发明通过对客户端连续获取的每一张图像的清晰度进行判断，挑选出清晰度最高的图像上传至服务端，提高了拍摄的签核文件图像的质量，以保证用户上传的签核文件图像符合要求。\n\n[0091]在本申请所提供的几个实施例中，应该理解到，所揭露的装置和方法，也可以通过其它的方式实现。以上所描述的装置实施例仅仅是示意性的，例如，附图中的流程图和框图显示了根据本发明的多个实施例的装置、方法和计算机程序产品的可能实现的体系架构、功能和操作。在这点上，流程图或框图中的每个方框可以代表一个模块、程序段或代码的一部分，所述模块、程序段或代码的一部分包含一个或多个用于实现规定的逻辑功能的可执行指令。也应当注意，在有些作为替换的实现方式中，方框中所标注的功能也可以以不同于附图中所标注的顺序发生。例如，两个连续的方框实际上可以基本并行地执行，它们有时也可以按相反的顺序执行，这依所涉及的功能而定。也要注意的是，框图和/或流程图中的每个方框、以及框图和/或流程图中的方框的组合，可以用执行规定的功能或动作的专用的基于硬件的系统来实现，或者可以用专用硬件与计算机指令的组合来实现。另外，在本发明各个实施例中的各功能模块可以集成在一起形成一个独立的部分，也可以是各个模块单独存在，也可以两个或两个以上模块集成形成一个独立的部分。\n\n[0092]所述功能如果以软件功能模块的形式实现并作为独立的产品销售或使用时，可以存储在一个计算机可读取存储介质中。基于这样的理解，本发明的技术方案本质上或者说对现有技术做出贡献的部分或者该技术方案的部分可以以软件产品的形式体现出来，该计算机软件产品存储在一个存储介质中，包括若干指令用以使得一台计算机设备(可以是个人计算机，服务器，或者网络设备等)执行本发明各个实施例所述方法的全部或部分步骤。而前述的存储介质包括：U盘、移动硬盘、只读存储器(ROM，Read-Only Memory)、随机存取存储器(RAM，Random Access Memory)、磁碟或者光盘等各种可以存储程序代码的介质。需要说明的是，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。\n\n[0093]以上所述仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。\n\n');
INSERT INTO `os_patent_instruction_text` VALUES (11140, 24078, '技术领域\n\n[0001]本发明涉及互联网领域，具体而言，涉及一种签核处理方法、装置及系统。\n\n背景技术\n\n[0002]在企业的日常管理中，签核是一件极其频繁而重要的工作，企业内部大大小小的事务几乎都与签核有关，例如企业内部的员工休假、人事调动、行政流程、制程安排、工程项目方案变更、材料采购或者其他事项都需要相关用户进行签核，在签核过程中，可能涉及到签核的修改。现有技术中，通常直接收到的用户发送关于修改事项的签核修改请求后允许用户对修改事项进行修改，可能造成对签核的事项的非法修改。\n\n发明内容\n\n[0003]有鉴于此，本发明实施例提供了一种签核处理方法、装置及系统，根据发送关于修改事项的签核修改请求的用户的权限判断是否允许用户对修改事项进行修改，只有在发起签核修改请求的用户具有该签核修改权限时，才允许用户对修改事项进行修改，以改善上述问题。\n\n[0004]为了实现上述目的，本发明采用的技术方案如下：\n\n[0005]一种签核处理方法，应用于服务器，所述方法包括：接收用户终端发送的用户触发的签核修改请求，所述签核修改请求中包括所要修改的修改事项；根据所述签核修改请求，判断所述用户终端对应的用户是否具有修改该修改事项的权限；如果所述用户终端对应的用户具有修改该修改事项的权限，允许所述用户对所述修改事项进行修改。\n\n[0006]一种签核处理装置，所述装置包括：接收模块、判断模块、修改模块。其中：所述接收模块用于接收用户发送的签核修改请求，所述签核修改请求中包括所要修改的修改事项；所述判断模块用于根据所述签核修改请求，判断所述用户是否具有修改该修改事项的权限；所述修改模块用于如果所述用户终端对应的用户具有修改该修改事项的权限，允许所述用户对所述修改事项进行修改。\n\n[0007]一种签核处理系统，所述系统包括相互通信连接的服务器以及用户终端。所述用户终端用于接收用户的签核修改请求，所述签核修改请求中包括所要修改的修改事项，将所述签核修改请求发送给服务器；所述服务器用于接收用户终端发送的用户触发的签核修改请求，根据所述签核修改请求，判断所述用户终端对应的用户是否具有修改该修改事项的权限，如果所述用户终端对应的用户具有修改该修改事项的权限，允许所述用户对所述修改事项进行修改。\n\n[0008]本发明实施例提供的签核处理方法、装置及系统，在接收到用户终端发送的用户触发的关于修改事项的签核修改请求后，首先判断该用户是否具有修改该修改事项的权限，如果用户终端对应的用户具有修改该修改事项的权限，则允许用户对修改事项进行修改。使在发起签核修改请求的用户具有修改该修改事项的权限的情况下，该签核修改请求才能进行，用户才能对修改事项进行修改。\n\n[0009]为使本发明的上述目的、特征和优点能更明显易懂，下文特举较佳实施例，并配合所附附图，作详细说明如下。\n\n附图说明\n\n[0010]为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0011]图1示出了本发明实施例提供的服务器与用户终端进行交互的示意图；\n\n[0012]图2示出了本发明实施例提供的服务器的结构示意图；\n\n[0013]图3示出了本发明第一实施例提供的签核处理方法的一种流程图；\n\n[0014]图4示出了本发明第一实施例提供的签核处理方法的另一种流程图；\n\n[0015]图5示出了本发明第一实施例提供的签核处理方法的又一种流程图；\n\n[0016]图6示出了本发明第一实施例提供的签核处理方法的再一种流程图；\n\n[0017]图7示出了本发明第二实施例提供的签核处理装置的功能模块图。\n\n具体实施方式\n\n[0018]下面将结合本发明实施例中附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。通常在此处附图中描述和示出的本发明实施例的组件可以以各种不同的配置来布置和设计。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0019]应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。同时，在本发明的描述中，术语“第一”、“第二”等仅用于区分描述，而不能理解为指示或暗示相对重要性。\n\n[0020]如图1所示，是本申请服务器100与用户终端200进行交互的示意图。所述服务器100通过网络与一个或多个用户终端200进行通信连接，以进行数据通信或交互。所述服务器100可以是网络服务器、数据库服务器等。所述用户终端200可以是个人电脑(personalcomputer，PC)、平板电脑、智能手机、个人数字助理(personal digital assistant，PDA)等。\n\n[0021]如图2所示，是本申请实施例提供的服务器100的方框示意图。所述服务器100包括签核处理装置300、存储器101、存储控制器102、处理器103、外设接口104及其他。\n\n[0022]所述存储器101、存储控制器102、处理器103、外设接口104各元件相互之间直接或间接地电性连接，以实现数据的传输或交互。例如，这些元件相互之间可通过一条或多条通讯总线或信号线实现电性连接。所述签核处理装置300包括至少一个可以软件或固件(firmware)的形式存储于所述存储器101中或固化在所述服务器100的操作系统(operating system，OS)中的软件功能模块。所述处理器103用于执行存储器101中存储的可执行模块，例如所述签核处理置及系统包括的软件功能模块或计算机程序。\n\n[0023]其中，存储器101可以是，但不限于，随机存取存储器(Random Access Memory，RAM)，只读存储器(Read Only Memory，ROM)，可编程只读存储器(Programmable Read-OnlyMemory，PROM)，可擦除只读存储器(Erasable Programmable Read-Only Memory，EPROM)，电可擦除只读存储器(Electric Erasable Programmable Read-Only Memory，EEPROM)等。其中，存储器101用于存储程序，所述处理器103在接收到执行指令后，执行所述程序，前述本发明实施例任一实施例揭示的流过程定义的服务器100所执行的方法可以应用于处理器103中，或者由处理器103实现。\n\n[0024]处理器103可能是一种集成电路芯片，具有信号的处理能力。上述的处理器103可以是通用处理器，包括中央处理器(Central Processing Unit，简称CPU)、网络处理器(Network Processor，简称NP)等；还可以是数字信号处理器(DSP)、专用集成电路(ASIC)、现成可编程门阵列(FPGA)或者其他可编程逻辑器件、分立门或者晶体管逻辑器件、分立硬件组件。可以实现或者执行本发明实施例中的公开的各方法、步骤及逻辑框图。通用处理器可以是微处理器或者该处理器103也可以是任何常规的处理器等。\n\n[0025]所述外设接口104将各种输入/输出装置耦合至处理器103以及存储器101。在一些实施例中，外设接口104，处理器103以及存储控制器102可以在单个芯片中实现。在其他一些实例中，他们可以分别由独立的芯片实现。\n\n[0026]可以理解的，图2所示的结构仅为示意，服务器100还可以包括比图2中所示更多或更少的组件，或者具有与图2所示不同的配置。图2中所示的各组件可以采用硬件、软件或其组合实现。\n\n[0027]用户在进行设计变更、项目方案修改、制程变化等签核事项中，通过发起关于修改事项的签核修改请求，使用户能够对修改事项进行修改，从而达到完成设计变更、项目方案修改、制程变化等事项的目的。\n\n[0028]第一实施例\n\n[0029]本发明实施例提供了一种签核处理方法，根据用户是否具有修改相应修改事项权限而确定是否允许用户对修改事项进行修改。请参见图3，该方法包括：\n\n[0030]步骤S110：接收用户终端200发送的用户触发的签核修改请求，签核修改请求中包括所要修改的修改事项。\n\n[0031]用户通过用户终端200确定需要进行签核修改的修改事项，并且发起关于该修改事项的签核修改请求。用户终端200将该签核修改请求发送给服务器100。\n\n[0032]于是，服务器100接收该用户终端200发送的用户触发的签核修改请求。\n\n[0033]当然，进一步的，在本实施例中，还可以包括用户登录。当用户在用户终端200登录后，方可发送签核修改请求。\n\n[0034]具体的，在步骤S110之前，还可以包括：接收用户终端200发送的用户的登录请求，所述登录请求中包括所述用户的身份标识以及用户输入的登录密码；判断所述身份标识与所述登录密码是否互相匹配；如果所述身份标识与所述登录密码互相匹配，允许用户登录。\n\n[0035]用户在用户终端200输入登录帐号以及登录密码。用户终端200向服务器100发送登录请求，该登录请求中包括所述用户的身份标识以及用户输入的登录密码，该身份标识可以就是用户输入的登录帐号，也可以是根据登录帐号确定的与该登录帐号相互对应的身份标识。\n\n[0036]服务器100接收到登录请求后，对身份标识与登录密码进行匹配，判断该身份标识对应的登录密码是否是登录请求中的登录密码，如果身份标识对应的登录密码为登录请求中的登录密码，则登录请求中的身份标识与登录密码相匹配，允许用户登录，以使用户在成功登录后可以发起签核修改请求。\n\n[0037]当然，若登录请求中的身份标识与登录密码不匹配，则该用户无法登录该登录帐号，不能以该登录帐号发起签核修改请求，即不能向服务器100发送签核修改请求。\n\n[0038]另外，登录请求中也可以是包括登录帐号和登录密码，服务器100接收到登录请求后，根据登录帐号确定与该登录帐号对应的身份标识，再判断身份标识与登录密码的匹配性。\n\n[0039]步骤S120：根据所述签核修改请求，判断所述用户终端200对应的用户是否具有修改该修改事项的权限，如果所述用户终端200对应的用户具有修改该修改事项的权限，执行步骤S130。\n\n[0040]服务器100在接收到签核修改请求后，首先判断发起该签核修改请求的用户是否具有修改该修改事项的权限。如果判断出发起该签核修改请求的用户具有修改该修改事项的权限，则执行步骤S130。如果判断出发起该签核修改请求的用户没有修改该修改事项的权限，则执行步骤S150。\n\n[0041]在一种具体的实施方式中，服务器100接收到的签核修改请求中还包括所述用户的身份标识，如图4所示，服务器100判断用户是否具有修改该修改事项的权限的方式可以是：\n\n[0042]步骤S121A：根据所述身份标识查找所述身份标识所属的级别。\n\n[0043]在服务器100的存储器101或者相应的数据库中，存储有身份标识以及与身份标识关联存储的该身份标识所属的级别。\n\n[0044]服务器100根据签核修改请求中的身份标识，查找与该身份标识关联存储的身份标识所属的级别。\n\n[0045]步骤S122A：查找所述身份标识所属的级别对应的所有管辖事项。\n\n[0046]在服务器100的存储器101或者相应的数据库中，存储有与身份标识所属的级别对应的所有管辖事项。每个用户可以发起修改其身份标识所属的级别对应的管辖事项的签核修改请求。\n\n[0047]服务器100根据查找到的该身份标识所属的级别查找该级别对应的所有管辖事项。\n\n[0048]步骤S123A：判断所述管辖事项中是否包括所述修改事项。\n\n[0049]服务器100判断查找到的所有管辖事项是否包括签核修改请求中所包括的修改事项，即判断签核修改请求中的修改事项是否属于查找到的管辖事项之一。\n\n[0050]具体判断方式可以是，将签核修改请求中的修改事项与查找到的管辖事项一一匹配，如果存在与修改事项相匹配的管辖事项，则可以判定管辖事项中包括所述修改事项，否则，判定管辖事项中不包括所述修改事项。\n\n[0051]步骤124A：如果所述管辖事项中包括所述修改事项，判定所述用户终端200对应的用户具有修改该修改事项的权限。\n\n[0052]在判定管辖事项包括修改事项时，则判定用户具有修改该修改事项的权限。\n\n[0053]本实施例还提供了另外一种实施方式，在该实施方式中，所述签核修改请求中仍然还包括所述用户的身份标识。如图5所示，服务器100判断用户是否具有修改该修改事项的权限的方式也可以是：\n\n[0054]步骤S121B：根据所述身份标识，查找所述身份标识对应的所有管辖事项。\n\n[0055]在服务器100的存储器101或者相应的数据库中，存储有身份标识以及与身份标识关联存储的身份标识对应的管辖事项。每个用户可以发起修改其身份标识对应的管辖事项的签核修改请求。\n\n[0056]服务器100根据签核修改请求中的身份标识，查找与该身份标识关联存储的管辖事项。\n\n[0057]步骤S122B：判断所述管辖事项中是否包括所述修改事项。\n\n[0058]服务器100判断查找到的所有管辖事项中是否包括有签核修改请求中所包括的修改事项，即判断签核修改请求中的修改事项是否属于查找到的管辖事项之一。\n\n[0059]具体判断方式也可以是，将签核修改请求中的修改事项与查找到的管辖事项一一匹配，如果存在与修改事项相匹配的管辖事项，则可以判定管辖事项中包括所述修改事项，否则，判定管辖事项中不包括所述修改事项。\n\n[0060]步骤S123B：如果所述管辖事项中包括所述修改事项，判定所述用户终端200对应的用户具有修改该修改事项的权限。\n\n[0061]在判定管辖事项包括修改事项时，则判定用户具有修改该修改事项的权限。\n\n[0062]本实施例还提供了一种实施方式，在该实施方式中，所述签核修改请求仍然还包括所述用户的身份标识。如图6所示，服务器100判断用户是否具有修改该修改事项的权限的方式还可以是：\n\n[0063]步骤S121C：根据所述修改事项，查找所述修改事项对应的具有修改该修改事项的权限的所有身份标识。\n\n[0064]具体的，在该实施方式中，在服务器100的存储器101或者相应的数据库中存储有所有的修改事项以及对应每个修改事项关联存储的身份标识，对应每个修改事项关联存储的身份标识为该修改事项对应的身份标识，并且为具有修改该修改事项的权限的身份标识。\n\n[0065]服务器100接收到用户发送的签核修改请求后，查找签核修改请求中的修改事项关联存储的身份标识，得到修改事项对应的所有身份标识。\n\n[0066]步骤S122C：判断查找到的身份标识中是否包括所述签核修改请求中的身份标识。\n\n[0067]服务器100判断查找到的所有身份标识中是否包括签核修改请求中的身份标识。\n\n[0068]步骤S123C：如果查找到的身份标识中包括所述签核修改请求中的身份标识，判定所述用户终端200对应的用户具有修改该修改事项的权限。\n\n[0069]在判定查找到的身份标识中包含所述签核修改请求中的身份标识时，判定所述用户具有修改该修改事项的权限。若签核修改请求中的身份标识不在查找到的身份标识内，则判定用户不具有修改该修改事项的权限。\n\n[0070]具体的，在本实施方式中，判断签核修改请求中的身份标识是否在查找到的身份标识内的方式可以是，服务器100可以将签核修改请求中的身份标识与查找到的身份标识一一匹配，当查找到的身份标识中存在可以与签核修改请求中的身份标识相匹配的身份标识时，则判定为查找到的身份标识中包含签核修改请求中的身份标识的结果。\n\n[0071]步骤S130：允许所述用户对所述修改事项进行修改。\n\n[0072]在发送签核修改请求的用户具有修改该修改事项的权限时，服务器100允许所述用户对修改事项进行修改，用户可以通过用户终端200成功修改该签核修改请求中的修改事项。\n\n[0073]进一步的，在本实施例中，还可以包括步骤S140：接收并存储用户对所述修改事项的修改。\n\n[0074]服务器100接收用户对修改事项进行修改的数据，并且将修改后的事项存储于服务器100的存储器101或者相应的数据库中。进一步的，服务器100将存储在数据库或者存储器101中的该修改事项在修改前的签核文件替换为修改后的签核文件。\n\n[0075]在本实施例中，当用户不具有修改该修改事项的权限时，执行步骤S150：向所述用户作出相应提示。\n\n[0076]在发送签核修改请求的用户不具有修改该修改事项的权限时，服务器100向用户做出相应的提示，以使用户获知其无修改该修改事项的权限。同时，服务器100不允许用户对修改事项进行修改。\n\n[0077]第二实施例\n\n[0078]本实施例提供了一种签核处理装置300，如图7所示，该签核处理装置300包括：接收模块310、判断模块320以及修改模块330。其中：接收模块310用于接收用户发送的签核修改请求，所述签核修改请求中包括所要修改的修改事项。判断模块320用于根据所述签核修改请求，判断所述用户是否具有修改该修改事项的权限。修改模块330用于如果所述用户终端200对应的用户具有修改该修改事项的权限，允许所述用户对所述修改事项进行修改。\n\n[0079]在本实施例提供的一种具体的实施方式中，所述签核请求中还包括所述用户的身份标识，所述判断模块320可以包括：级别查找单元、第一查找单元、第一判断单元以及第一判定单元。其中：级别查找单元用于根据所述身份标识查找所述身份标识所属的级别。第一查找单元用于查找所述身份标识所属的级别对应的所有管辖事项。第一判断单元用于判断所述管辖事项中是否包含所述修改事项。第一判定单元，用于当所述管辖事项中包含所述修改事项，判定所述用户终端200对应的用户具有修改该修改事项的权限。\n\n[0080]在本实施例提供的另一种具体的实施方式中，所述签核修改请求中仍然还包括所述用户的身份标识，所述判断模块320包括：事项查找单元、第二判断单元以及第二判定单元。事项查找单元用于根据所述身份标识，查找所述身份标识对应的所有管辖事项。第二判断单元用于判断所述管辖事项中是否包含所述修改事项。第二判定单元用于当所述管辖事项中包含所述修改事项，判定所述用户终端200对应的用户具有修改该修改事项的权限。\n\n[0081]在本实施例提供的又一种具体的实施方式中，所述签核修改请求中仍然还包括所述用户的身份标识，所述判断模块320包括：身份标识查找单元、第三判断单元以及第三判定单元。其中：身份标识查找单元用于根据所述修改事项，查找所述修改事项对应的具有修改该修改事项的权限的所有身份标识。第三判断单元用于判断查找到的身份标识中是否包含签核修改请求中的身份标识。第三判定单元用于如果查找到的身份标识中包含所述签核修改请求中的身份标识，判定所述用户终端200对应的用户具有修改该修改事项的权限。\n\n[0082]在本实施例中，当所述判断模块320判定所述用户不具有修改该修改事项的权限，修改模块330还用于不允许所述用户对修改事项进行修改并且向所述用户作出相应提示。\n\n[0083]进一步的，在本实施例中，在用户登录后允许用户发送签核修改请求，于是，该签核处理装置300还可以包括登录模块，用于接收用户的登录请求，所述登录请求中包括所述用户的身份标识以及用户输入的登录密码；判断所述身份标识与所述登录密码是否互相匹配；如果所述身份标识与所述登录密码互相匹配，则允许用户登录。\n\n[0084]第三实施例\n\n[0085]本实施例提供了一种签核处理系统，如图1所示，该签核处理系统包括相互通信连接的服务器100以及用户终端200。其中：用户终端200用于接收用户触发的签核修改请求，所述签核修改请求中包括所要修改的修改事项，将所述签核修改请求发送给服务器100。服务器100用于接收用户终端200发送的签核修改请求，根据所述签核修改请求，判断所述用户终端200对应的用户是否具有修改该修改事项的权限，如果所述用户终端200对应的用户具有修改该修改事项的权限，允许所述用户对所述修改事项进行修改。关于本实施例的其它细节可以参考第一实施例以及第二实施例的描述，在此不再赘述。\n\n[0086]综上所述，本发明实施例提供的签核处理方法、装置及系统，在接收到用户发送的签核修改请求后，先判断用户是否具有修改该修改事项的权限，如果用户具有该签核修改请求的权限，则允许用户对修改事项进行修改，如果用户不具有该签核修改请求的权限，则不允许用户对修改事项进行修改，以防止不具有修改权限的用户进行非法修改。\n\n[0087]在本申请所提供的几个实施例中，应该理解到，所揭露的装置和方法，也可以通过其它的方式实现。以上所描述的装置实施例仅仅是示意性的，例如，附图中的流程图和框图显示了根据本发明的多个实施例的装置、方法和计算机程序产品的可能实现的体系架构、功能和操作。在这点上，流程图或框图中的每个方框可以代表一个模块、程序段或代码的一部分，所述模块、程序段或代码的一部分包含一个或多个用于实现规定的逻辑功能的可执行指令。也应当注意，在有些作为替换的实现方式中，方框中所标注的功能也可以以不同于附图中所标注的顺序发生。例如，两个连续的方框实际上可以基本并行地执行，它们有时也可以按相反的顺序执行，这依所涉及的功能而定。也要注意的是，框图和/或流程图中的每个方框、以及框图和/或流程图中的方框的组合，可以用执行规定的功能或动作的专用的基于硬件的系统来实现，或者可以用专用硬件与计算机指令的组合来实现。\n\n[0088]另外，在本发明各个实施例中的各功能模块可以集成在一起形成一个独立的部分，也可以是各个模块单独存在，也可以两个或两个以上模块集成形成一个独立的部分。\n\n[0089]所述功能如果以软件功能模块的形式实现并作为独立的产品销售或使用时，可以存储在一个计算机可读取存储介质中。基于这样的理解，本发明的技术方案本质上或者说对现有技术做出贡献的部分或者该技术方案的部分可以以软件产品的形式体现出来，该计算机软件产品存储在一个存储介质中，包括若干指令用以使得一台计算机设备(可以是个人计算机，服务器，或者网络设备等)执行本发明各个实施例所述方法的全部或部分步骤。而前述的存储介质包括：U盘、移动硬盘、只读存储器(ROM，Read-Only Memory)、随机存取存储器(RAM，Random Access Memory)、磁碟或者光盘等各种可以存储程序代码的介质。需要说明的是，在本文中，诸如第一和第二、另一等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。\n\n[0090]以上所述仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。\n\n[0091]以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应所述以权利要求的保护范围为准。\n\n', '技术领域\n\n[0001]本发明涉及互联网领域，具体而言，涉及一种签核处理方法、装置及系统。\n\n背景技术\n\n[0002]在企业的日常管理中，签核是一件极其频繁而重要的工作，企业内部大大小小的事务几乎都与签核有关，例如企业内部的员工休假、人事调动、行政流程、制程安排、工程项目方案变更、材料采购或者其他事项都需要相关用户进行签核，在签核过程中，可能涉及到签核的修改。现有技术中，通常直接收到的用户发送关于修改事项的签核修改请求后允许用户对修改事项进行修改，可能造成对签核的事项的非法修改。\n\n发明内容\n\n[0003]有鉴于此，本发明实施例提供了一种签核处理方法、装置及系统，根据发送关于修改事项的签核修改请求的用户的权限判断是否允许用户对修改事项进行修改，只有在发起签核修改请求的用户具有该签核修改权限时，才允许用户对修改事项进行修改，以改善上述问题。\n\n[0004]为了实现上述目的，本发明采用的技术方案如下：\n\n[0005]一种签核处理方法，应用于服务器，所述方法包括：接收用户终端发送的用户触发的签核修改请求，所述签核修改请求中包括所要修改的修改事项；根据所述签核修改请求，判断所述用户终端对应的用户是否具有修改该修改事项的权限；如果所述用户终端对应的用户具有修改该修改事项的权限，允许所述用户对所述修改事项进行修改。\n\n[0006]一种签核处理装置，所述装置包括：接收模块、判断模块、修改模块。其中：所述接收模块用于接收用户发送的签核修改请求，所述签核修改请求中包括所要修改的修改事项；所述判断模块用于根据所述签核修改请求，判断所述用户是否具有修改该修改事项的权限；所述修改模块用于如果所述用户终端对应的用户具有修改该修改事项的权限，允许所述用户对所述修改事项进行修改。\n\n[0007]一种签核处理系统，所述系统包括相互通信连接的服务器以及用户终端。所述用户终端用于接收用户的签核修改请求，所述签核修改请求中包括所要修改的修改事项，将所述签核修改请求发送给服务器；所述服务器用于接收用户终端发送的用户触发的签核修改请求，根据所述签核修改请求，判断所述用户终端对应的用户是否具有修改该修改事项的权限，如果所述用户终端对应的用户具有修改该修改事项的权限，允许所述用户对所述修改事项进行修改。\n\n[0008]本发明实施例提供的签核处理方法、装置及系统，在接收到用户终端发送的用户触发的关于修改事项的签核修改请求后，首先判断该用户是否具有修改该修改事项的权限，如果用户终端对应的用户具有修改该修改事项的权限，则允许用户对修改事项进行修改。使在发起签核修改请求的用户具有修改该修改事项的权限的情况下，该签核修改请求才能进行，用户才能对修改事项进行修改。\n\n[0009]为使本发明的上述目的、特征和优点能更明显易懂，下文特举较佳实施例，并配合所附附图，作详细说明如下。\n\n附图说明\n\n[0010]为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0011]图1示出了本发明实施例提供的服务器与用户终端进行交互的示意图；\n\n[0012]图2示出了本发明实施例提供的服务器的结构示意图；\n\n[0013]图3示出了本发明第一实施例提供的签核处理方法的一种流程图；\n\n[0014]图4示出了本发明第一实施例提供的签核处理方法的另一种流程图；\n\n[0015]图5示出了本发明第一实施例提供的签核处理方法的又一种流程图；\n\n[0016]图6示出了本发明第一实施例提供的签核处理方法的再一种流程图；\n\n[0017]图7示出了本发明第二实施例提供的签核处理装置的功能模块图。\n\n具体实施方式\n\n[0018]下面将结合本发明实施例中附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。通常在此处附图中描述和示出的本发明实施例的组件可以以各种不同的配置来布置和设计。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0019]应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。同时，在本发明的描述中，术语“第一”、“第二”等仅用于区分描述，而不能理解为指示或暗示相对重要性。\n\n[0020]如图1所示，是本申请服务器100与用户终端200进行交互的示意图。所述服务器100通过网络与一个或多个用户终端200进行通信连接，以进行数据通信或交互。所述服务器100可以是网络服务器、数据库服务器等。所述用户终端200可以是个人电脑(personalcomputer，PC)、平板电脑、智能手机、个人数字助理(personal digital assistant，PDA)等。\n\n[0021]如图2所示，是本申请实施例提供的服务器100的方框示意图。所述服务器100包括签核处理装置300、存储器101、存储控制器102、处理器103、外设接口104及其他。\n\n[0022]所述存储器101、存储控制器102、处理器103、外设接口104各元件相互之间直接或间接地电性连接，以实现数据的传输或交互。例如，这些元件相互之间可通过一条或多条通讯总线或信号线实现电性连接。所述签核处理装置300包括至少一个可以软件或固件(firmware)的形式存储于所述存储器101中或固化在所述服务器100的操作系统(operating system，OS)中的软件功能模块。所述处理器103用于执行存储器101中存储的可执行模块，例如所述签核处理置及系统包括的软件功能模块或计算机程序。\n\n[0023]其中，存储器101可以是，但不限于，随机存取存储器(Random Access Memory，RAM)，只读存储器(Read Only Memory，ROM)，可编程只读存储器(Programmable Read-OnlyMemory，PROM)，可擦除只读存储器(Erasable Programmable Read-Only Memory，EPROM)，电可擦除只读存储器(Electric Erasable Programmable Read-Only Memory，EEPROM)等。其中，存储器101用于存储程序，所述处理器103在接收到执行指令后，执行所述程序，前述本发明实施例任一实施例揭示的流过程定义的服务器100所执行的方法可以应用于处理器103中，或者由处理器103实现。\n\n[0024]处理器103可能是一种集成电路芯片，具有信号的处理能力。上述的处理器103可以是通用处理器，包括中央处理器(Central Processing Unit，简称CPU)、网络处理器(Network Processor，简称NP)等；还可以是数字信号处理器(DSP)、专用集成电路(ASIC)、现成可编程门阵列(FPGA)或者其他可编程逻辑器件、分立门或者晶体管逻辑器件、分立硬件组件。可以实现或者执行本发明实施例中的公开的各方法、步骤及逻辑框图。通用处理器可以是微处理器或者该处理器103也可以是任何常规的处理器等。\n\n[0025]所述外设接口104将各种输入/输出装置耦合至处理器103以及存储器101。在一些实施例中，外设接口104，处理器103以及存储控制器102可以在单个芯片中实现。在其他一些实例中，他们可以分别由独立的芯片实现。\n\n[0026]可以理解的，图2所示的结构仅为示意，服务器100还可以包括比图2中所示更多或更少的组件，或者具有与图2所示不同的配置。图2中所示的各组件可以采用硬件、软件或其组合实现。\n\n[0027]用户在进行设计变更、项目方案修改、制程变化等签核事项中，通过发起关于修改事项的签核修改请求，使用户能够对修改事项进行修改，从而达到完成设计变更、项目方案修改、制程变化等事项的目的。\n\n[0028]第一实施例\n\n[0029]本发明实施例提供了一种签核处理方法，根据用户是否具有修改相应修改事项权限而确定是否允许用户对修改事项进行修改。请参见图3，该方法包括：\n\n[0030]步骤S110：接收用户终端200发送的用户触发的签核修改请求，签核修改请求中包括所要修改的修改事项。\n\n[0031]用户通过用户终端200确定需要进行签核修改的修改事项，并且发起关于该修改事项的签核修改请求。用户终端200将该签核修改请求发送给服务器100。\n\n[0032]于是，服务器100接收该用户终端200发送的用户触发的签核修改请求。\n\n[0033]当然，进一步的，在本实施例中，还可以包括用户登录。当用户在用户终端200登录后，方可发送签核修改请求。\n\n[0034]具体的，在步骤S110之前，还可以包括：接收用户终端200发送的用户的登录请求，所述登录请求中包括所述用户的身份标识以及用户输入的登录密码；判断所述身份标识与所述登录密码是否互相匹配；如果所述身份标识与所述登录密码互相匹配，允许用户登录。\n\n[0035]用户在用户终端200输入登录帐号以及登录密码。用户终端200向服务器100发送登录请求，该登录请求中包括所述用户的身份标识以及用户输入的登录密码，该身份标识可以就是用户输入的登录帐号，也可以是根据登录帐号确定的与该登录帐号相互对应的身份标识。\n\n[0036]服务器100接收到登录请求后，对身份标识与登录密码进行匹配，判断该身份标识对应的登录密码是否是登录请求中的登录密码，如果身份标识对应的登录密码为登录请求中的登录密码，则登录请求中的身份标识与登录密码相匹配，允许用户登录，以使用户在成功登录后可以发起签核修改请求。\n\n[0037]当然，若登录请求中的身份标识与登录密码不匹配，则该用户无法登录该登录帐号，不能以该登录帐号发起签核修改请求，即不能向服务器100发送签核修改请求。\n\n[0038]另外，登录请求中也可以是包括登录帐号和登录密码，服务器100接收到登录请求后，根据登录帐号确定与该登录帐号对应的身份标识，再判断身份标识与登录密码的匹配性。\n\n[0039]步骤S120：根据所述签核修改请求，判断所述用户终端200对应的用户是否具有修改该修改事项的权限，如果所述用户终端200对应的用户具有修改该修改事项的权限，执行步骤S130。\n\n[0040]服务器100在接收到签核修改请求后，首先判断发起该签核修改请求的用户是否具有修改该修改事项的权限。如果判断出发起该签核修改请求的用户具有修改该修改事项的权限，则执行步骤S130。如果判断出发起该签核修改请求的用户没有修改该修改事项的权限，则执行步骤S150。\n\n[0041]在一种具体的实施方式中，服务器100接收到的签核修改请求中还包括所述用户的身份标识，如图4所示，服务器100判断用户是否具有修改该修改事项的权限的方式可以是：\n\n[0042]步骤S121A：根据所述身份标识查找所述身份标识所属的级别。\n\n[0043]在服务器100的存储器101或者相应的数据库中，存储有身份标识以及与身份标识关联存储的该身份标识所属的级别。\n\n[0044]服务器100根据签核修改请求中的身份标识，查找与该身份标识关联存储的身份标识所属的级别。\n\n[0045]步骤S122A：查找所述身份标识所属的级别对应的所有管辖事项。\n\n[0046]在服务器100的存储器101或者相应的数据库中，存储有与身份标识所属的级别对应的所有管辖事项。每个用户可以发起修改其身份标识所属的级别对应的管辖事项的签核修改请求。\n\n[0047]服务器100根据查找到的该身份标识所属的级别查找该级别对应的所有管辖事项。\n\n[0048]步骤S123A：判断所述管辖事项中是否包括所述修改事项。\n\n[0049]服务器100判断查找到的所有管辖事项是否包括签核修改请求中所包括的修改事项，即判断签核修改请求中的修改事项是否属于查找到的管辖事项之一。\n\n[0050]具体判断方式可以是，将签核修改请求中的修改事项与查找到的管辖事项一一匹配，如果存在与修改事项相匹配的管辖事项，则可以判定管辖事项中包括所述修改事项，否则，判定管辖事项中不包括所述修改事项。\n\n[0051]步骤124A：如果所述管辖事项中包括所述修改事项，判定所述用户终端200对应的用户具有修改该修改事项的权限。\n\n[0052]在判定管辖事项包括修改事项时，则判定用户具有修改该修改事项的权限。\n\n[0053]本实施例还提供了另外一种实施方式，在该实施方式中，所述签核修改请求中仍然还包括所述用户的身份标识。如图5所示，服务器100判断用户是否具有修改该修改事项的权限的方式也可以是：\n\n[0054]步骤S121B：根据所述身份标识，查找所述身份标识对应的所有管辖事项。\n\n[0055]在服务器100的存储器101或者相应的数据库中，存储有身份标识以及与身份标识关联存储的身份标识对应的管辖事项。每个用户可以发起修改其身份标识对应的管辖事项的签核修改请求。\n\n[0056]服务器100根据签核修改请求中的身份标识，查找与该身份标识关联存储的管辖事项。\n\n[0057]步骤S122B：判断所述管辖事项中是否包括所述修改事项。\n\n[0058]服务器100判断查找到的所有管辖事项中是否包括有签核修改请求中所包括的修改事项，即判断签核修改请求中的修改事项是否属于查找到的管辖事项之一。\n\n[0059]具体判断方式也可以是，将签核修改请求中的修改事项与查找到的管辖事项一一匹配，如果存在与修改事项相匹配的管辖事项，则可以判定管辖事项中包括所述修改事项，否则，判定管辖事项中不包括所述修改事项。\n\n[0060]步骤S123B：如果所述管辖事项中包括所述修改事项，判定所述用户终端200对应的用户具有修改该修改事项的权限。\n\n[0061]在判定管辖事项包括修改事项时，则判定用户具有修改该修改事项的权限。\n\n[0062]本实施例还提供了一种实施方式，在该实施方式中，所述签核修改请求仍然还包括所述用户的身份标识。如图6所示，服务器100判断用户是否具有修改该修改事项的权限的方式还可以是：\n\n[0063]步骤S121C：根据所述修改事项，查找所述修改事项对应的具有修改该修改事项的权限的所有身份标识。\n\n[0064]具体的，在该实施方式中，在服务器100的存储器101或者相应的数据库中存储有所有的修改事项以及对应每个修改事项关联存储的身份标识，对应每个修改事项关联存储的身份标识为该修改事项对应的身份标识，并且为具有修改该修改事项的权限的身份标识。\n\n[0065]服务器100接收到用户发送的签核修改请求后，查找签核修改请求中的修改事项关联存储的身份标识，得到修改事项对应的所有身份标识。\n\n[0066]步骤S122C：判断查找到的身份标识中是否包括所述签核修改请求中的身份标识。\n\n[0067]服务器100判断查找到的所有身份标识中是否包括签核修改请求中的身份标识。\n\n[0068]步骤S123C：如果查找到的身份标识中包括所述签核修改请求中的身份标识，判定所述用户终端200对应的用户具有修改该修改事项的权限。\n\n[0069]在判定查找到的身份标识中包含所述签核修改请求中的身份标识时，判定所述用户具有修改该修改事项的权限。若签核修改请求中的身份标识不在查找到的身份标识内，则判定用户不具有修改该修改事项的权限。\n\n[0070]具体的，在本实施方式中，判断签核修改请求中的身份标识是否在查找到的身份标识内的方式可以是，服务器100可以将签核修改请求中的身份标识与查找到的身份标识一一匹配，当查找到的身份标识中存在可以与签核修改请求中的身份标识相匹配的身份标识时，则判定为查找到的身份标识中包含签核修改请求中的身份标识的结果。\n\n[0071]步骤S130：允许所述用户对所述修改事项进行修改。\n\n[0072]在发送签核修改请求的用户具有修改该修改事项的权限时，服务器100允许所述用户对修改事项进行修改，用户可以通过用户终端200成功修改该签核修改请求中的修改事项。\n\n[0073]进一步的，在本实施例中，还可以包括步骤S140：接收并存储用户对所述修改事项的修改。\n\n[0074]服务器100接收用户对修改事项进行修改的数据，并且将修改后的事项存储于服务器100的存储器101或者相应的数据库中。进一步的，服务器100将存储在数据库或者存储器101中的该修改事项在修改前的签核文件替换为修改后的签核文件。\n\n[0075]在本实施例中，当用户不具有修改该修改事项的权限时，执行步骤S150：向所述用户作出相应提示。\n\n[0076]在发送签核修改请求的用户不具有修改该修改事项的权限时，服务器100向用户做出相应的提示，以使用户获知其无修改该修改事项的权限。同时，服务器100不允许用户对修改事项进行修改。\n\n[0077]第二实施例\n\n[0078]本实施例提供了一种签核处理装置300，如图7所示，该签核处理装置300包括：接收模块310、判断模块320以及修改模块330。其中：接收模块310用于接收用户发送的签核修改请求，所述签核修改请求中包括所要修改的修改事项。判断模块320用于根据所述签核修改请求，判断所述用户是否具有修改该修改事项的权限。修改模块330用于如果所述用户终端200对应的用户具有修改该修改事项的权限，允许所述用户对所述修改事项进行修改。\n\n[0079]在本实施例提供的一种具体的实施方式中，所述签核请求中还包括所述用户的身份标识，所述判断模块320可以包括：级别查找单元、第一查找单元、第一判断单元以及第一判定单元。其中：级别查找单元用于根据所述身份标识查找所述身份标识所属的级别。第一查找单元用于查找所述身份标识所属的级别对应的所有管辖事项。第一判断单元用于判断所述管辖事项中是否包含所述修改事项。第一判定单元，用于当所述管辖事项中包含所述修改事项，判定所述用户终端200对应的用户具有修改该修改事项的权限。\n\n[0080]在本实施例提供的另一种具体的实施方式中，所述签核修改请求中仍然还包括所述用户的身份标识，所述判断模块320包括：事项查找单元、第二判断单元以及第二判定单元。事项查找单元用于根据所述身份标识，查找所述身份标识对应的所有管辖事项。第二判断单元用于判断所述管辖事项中是否包含所述修改事项。第二判定单元用于当所述管辖事项中包含所述修改事项，判定所述用户终端200对应的用户具有修改该修改事项的权限。\n\n[0081]在本实施例提供的又一种具体的实施方式中，所述签核修改请求中仍然还包括所述用户的身份标识，所述判断模块320包括：身份标识查找单元、第三判断单元以及第三判定单元。其中：身份标识查找单元用于根据所述修改事项，查找所述修改事项对应的具有修改该修改事项的权限的所有身份标识。第三判断单元用于判断查找到的身份标识中是否包含签核修改请求中的身份标识。第三判定单元用于如果查找到的身份标识中包含所述签核修改请求中的身份标识，判定所述用户终端200对应的用户具有修改该修改事项的权限。\n\n[0082]在本实施例中，当所述判断模块320判定所述用户不具有修改该修改事项的权限，修改模块330还用于不允许所述用户对修改事项进行修改并且向所述用户作出相应提示。\n\n[0083]进一步的，在本实施例中，在用户登录后允许用户发送签核修改请求，于是，该签核处理装置300还可以包括登录模块，用于接收用户的登录请求，所述登录请求中包括所述用户的身份标识以及用户输入的登录密码；判断所述身份标识与所述登录密码是否互相匹配；如果所述身份标识与所述登录密码互相匹配，则允许用户登录。\n\n[0084]第三实施例\n\n[0085]本实施例提供了一种签核处理系统，如图1所示，该签核处理系统包括相互通信连接的服务器100以及用户终端200。其中：用户终端200用于接收用户触发的签核修改请求，所述签核修改请求中包括所要修改的修改事项，将所述签核修改请求发送给服务器100。服务器100用于接收用户终端200发送的签核修改请求，根据所述签核修改请求，判断所述用户终端200对应的用户是否具有修改该修改事项的权限，如果所述用户终端200对应的用户具有修改该修改事项的权限，允许所述用户对所述修改事项进行修改。关于本实施例的其它细节可以参考第一实施例以及第二实施例的描述，在此不再赘述。\n\n[0086]综上所述，本发明实施例提供的签核处理方法、装置及系统，在接收到用户发送的签核修改请求后，先判断用户是否具有修改该修改事项的权限，如果用户具有该签核修改请求的权限，则允许用户对修改事项进行修改，如果用户不具有该签核修改请求的权限，则不允许用户对修改事项进行修改，以防止不具有修改权限的用户进行非法修改。\n\n[0087]在本申请所提供的几个实施例中，应该理解到，所揭露的装置和方法，也可以通过其它的方式实现。以上所描述的装置实施例仅仅是示意性的，例如，附图中的流程图和框图显示了根据本发明的多个实施例的装置、方法和计算机程序产品的可能实现的体系架构、功能和操作。在这点上，流程图或框图中的每个方框可以代表一个模块、程序段或代码的一部分，所述模块、程序段或代码的一部分包含一个或多个用于实现规定的逻辑功能的可执行指令。也应当注意，在有些作为替换的实现方式中，方框中所标注的功能也可以以不同于附图中所标注的顺序发生。例如，两个连续的方框实际上可以基本并行地执行，它们有时也可以按相反的顺序执行，这依所涉及的功能而定。也要注意的是，框图和/或流程图中的每个方框、以及框图和/或流程图中的方框的组合，可以用执行规定的功能或动作的专用的基于硬件的系统来实现，或者可以用专用硬件与计算机指令的组合来实现。\n\n[0088]另外，在本发明各个实施例中的各功能模块可以集成在一起形成一个独立的部分，也可以是各个模块单独存在，也可以两个或两个以上模块集成形成一个独立的部分。\n\n[0089]所述功能如果以软件功能模块的形式实现并作为独立的产品销售或使用时，可以存储在一个计算机可读取存储介质中。基于这样的理解，本发明的技术方案本质上或者说对现有技术做出贡献的部分或者该技术方案的部分可以以软件产品的形式体现出来，该计算机软件产品存储在一个存储介质中，包括若干指令用以使得一台计算机设备(可以是个人计算机，服务器，或者网络设备等)执行本发明各个实施例所述方法的全部或部分步骤。而前述的存储介质包括：U盘、移动硬盘、只读存储器(ROM，Read-Only Memory)、随机存取存储器(RAM，Random Access Memory)、磁碟或者光盘等各种可以存储程序代码的介质。需要说明的是，在本文中，诸如第一和第二、另一等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。\n\n[0090]以上所述仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。\n\n[0091]以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应所述以权利要求的保护范围为准。\n\n');
INSERT INTO `os_patent_instruction_text` VALUES (11141, 24079, '技术领域\n\n[0001]本发明涉及电子信息的技术领域，具体而言，涉及一种电子核签方法及设备。\n\n背景技术\n\n[0002]传统的核签，是在纸质文件上签署姓名，代表签字者的授权和认可，这在日常的工作和生活中随处需要。目前，对于办公流程中常见的文件审批方式，是员工书面打印待审批文件、交给审批人手动签字、扫描该签字文件、发送传真或上传到邮件发送，作为线上审批证明文件使用。\n\n[0003]然而，这种传统的核签方式往往会受到地域和时间的限制，使得核签的便捷性和效率都大打折扣，也使得核签双方的业务往来和授权受到了限制。\n\n发明内容\n\n[0004]有鉴于此，本发明在于提供一种电子核签方法及设备，以便于在核签电子文件中更便捷，更高效。\n\n[0005]具体的，本发明提出了以下具体的实施例：\n\n[0006]本发明实施例提出了一种电子核签方法，其应用于电子核签过程，包括以下步骤：\n\n[0007]当用户处于登录状态时，判断是否有需要所述用户处理的核签请求；\n\n[0008]若判断结果为是，则发送所述签核请求至所述用户；\n\n[0009]当接收到所述用户的确定信号时，提取与所述用户相对应的签名信息对所述签核请求进行签核。\n\n[0010]进一步地，所述判断是否有需要所述用户处理的核签请求，具体包括：\n\n[0011]基于核签请求的当前流程所需要的核签人生成核签人数据库；\n\n[0012]判断所述用户是否存在于所述核签人数据库中。\n\n[0013]进一步地，所述确定信号，通过以下方式获取：\n\n[0014]接收所述用户点击确认键产生的确定信号；其中，所述确认键对应于所述核签请求。\n\n[0015]进一步地，当无法提取与所述用户相对应的签名信息时，向所述用户发送提示信息以提示所述用户录入签名信息。\n\n[0016]进一步地，还包括：\n\n[0017]将所述签名信息存储并标记为与所述用户相对应。\n\n[0018]本发明实施例还提出了一种电子核签设备，其应用于电子核签过程，包括：\n\n[0019]判断模块，用于当用户处于登录状态时，判断是否有需要所述用户处理的核签请求；\n\n[0020]处理模块，用于当判断结果为是时，发送所述签核请求至所述用户；\n\n[0021]签核模块，用于当接收到所述用户的确定信号时，提取与所述用户相对应的签名信息对所述签核请求进行签核。\n\n[0022]进一步地，所述判断模块，具体用于：\n\n[0023]当用户处于登录状态时，基于核签请求的当前流程所需要的核签人生成核签人数据库；\n\n[0024]判断所述用户是否存在于所述核签人数据库中。\n\n[0025]进一步地，还包括：\n\n[0026]确认模块，用于接收所述用户点击确认键产生的确定信号；\n\n[0027]其中，所述确认键对应于所述核签请求。\n\n[0028]进一步地，还包括：\n\n[0029]提醒模块，用于当无法提取与所述用户相对应的签名信息时，向所述用户发送提示信息以提示所述用户录入签名信息；\n\n[0030]获取模块，用于获取所述用户的签名信息。\n\n[0031]进一步地，还包括：存储模块，用于当所述用户录入签名信息时，将所述签名信息存储并标记为与所述用户相对应。\n\n[0032]本发明的一种电子核签方法及设备，其应用于电子核签过程，其中一种电子核签方法包括以下步骤：当用户处于登录状态时，判断是否有需要所述用户处理的核签请求；若判断结果为是，则发送所述核签请求至所述用户；当接收到所述用户的确定信号时，提取与所述用户相对应的签名信息对所述核签请求进行核签。因此，通过上述方法，通过接受用户的确定信号，提取与用户相对应的签名信息对文件进行电子核签，提高了用户核签电子文件的便利性，使用户核签电子文件时更高效。\n\n附图说明\n\n[0033]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0034]图1是本发明较佳实施例提供的电子核签方法的流程图；\n\n[0035]图2是本发明较佳实施例提供的电子核签方法的流程图；\n\n[0036]图3是本发明较佳实施例提供的电子核签方法的流程图；\n\n[0037]图4是本发明较佳实施例提供的电子核签方法的流程图；\n\n[0038]图5是本发明较佳实施例提供的电子核签设备的连接示意图。\n\n具体实施方式\n\n[0039]在下文中，将更全面地描述本公开的各种实施例。本公开可具有各种实施例，并且可在其中做出调整和改变。然而，应理解：不存在将本公开的各种实施例限于在此公开的特定实施例的意图，而是应将本公开理解为涵盖落入本公开的各种实施例的精神和范围内的所有调整、等同物和/或可选方案。\n\n[0040]在下文中，可在本公开的各种实施例中使用的术语“包括”或“可包括”指示所公开的功能、操作或元件的存在，并且不限制一个或更多个功能、操作或元件的增加。此外，如在本公开的各种实施例中所使用，术语“包括”、“具有”及其同源词仅意在表示特定特征、数字、步骤、操作、元件、组件或前述项的组合，并且不应被理解为首先排除一个或更多个其它特征、数字、步骤、操作、元件、组件或前述项的组合的存在或增加一个或更多个特征、数字、步骤、操作、元件、组件或前述项的组合的可能性。\n\n[0041]在本公开的各种实施例中，表述“或”或“A或/和B中的至少一个”包括同时列出的文字的任何组合或所有组合。例如，表述“A或B”或“A或/和B中的至少一个”可包括A、可包括B或可包括A和B二者。\n\n[0042]在本公开的各种实施例中使用的表述(诸如“第一”、“第二”等)可修饰在各种实施例中的各种组成元件，不过可不限制相应组成元件。例如，以上表述并不限制所述元件的顺序和/或重要性。以上表述仅用于将一个元件与其它元件区别开的目的。例如，第一用户装置和第二用户装置指示不同用户装置，尽管二者都是用户装置。例如，在不脱离本公开的各种实施例的范围的情况下，第一元件可被称为第二元件，同样地，第二元件也可被称为第一元件。\n\n[0043]应注意到：如果描述将一个组成元件“连接”到另一组成元件，则可将第一组成元件直接连接到第二组成元件，并且可在第一组成元件和第二组成元件之间“连接”第三组成元件。相反地，当将一个组成元件“直接连接”到另一组成元件时，可理解为在第一组成元件和第二组成元件之间不存在第三组成元件。\n\n[0044]在本公开的各种实施例中使用的术语“用户”可指示使用电子装置的人或使用电子装置的装置(例如，人工智能电子装置)。\n\n[0045]在本公开的各种实施例中使用的术语仅用于描述特定实施例的目的并且并非意在限制本公开的各种实施例。如在此所使用，单数形式意在也包括复数形式，除非上下文清楚地另有指示。除非另有限定，否则在这里使用的所有术语(包括技术术语和科学术语)具有与本公开的各种实施例所属领域普通技术人员通常理解的含义相同的含义。所述术语(诸如在一般使用的词典中限定的术语)将被解释为具有与在相关技术领域中的语境含义相同的含义并且将不被解释为具有理想化的含义或过于正式的含义，除非在本公开的各种实施例中被清楚地限定。\n\n[0046]实施例1\n\n[0047]本发明实施例1提出了一种电子核签方法，其应用于电子核签过程，如图1所述，包括以下步骤：\n\n[0048]步骤101、当用户处于登录状态时，判断是否有需要所述用户处理的核签请求。\n\n[0049]具体地，在此通过一个具体的例子来对核签过程进行说明，在一个具体的实施例中，例如，当用户处于登录状态时，是指用户需要先进行登录，具体为需要发送登录请求，该登录请求可以包括有账户、密码等登录信息，而发起登录请求并通过登录验证的用户即为可以处理核签请求的用户。\n\n[0050]判断是否存在有需要该用户进行电子核签的请求，该请求可以是关于请假的电子核签流程，也可以是关于报销的电子核签流程，还可以是关于议会日程的电子核签流程等等。\n\n[0051]步骤102、若判断结果为是，则发送所述核签请求至所述用户；\n\n[0052]具体地，若步骤102中的判断结果为是，也即是存在有需要该用户进行处理的核签请求，则将所述核签请求发送至该用户。\n\n[0053]在一个具体的实施例中，如图1所示，在该具体的实施例中，若判断结果为否，则继续判断是否存在有需要该用户进行处理的核签请求。\n\n[0054]步骤103、当接收到所述用户的确定信号时，提取与所述用户相对应的签名信息对所述核签请求进行核签。\n\n[0055]具体地，当存在需要该用户进行处理的核签请求，并将所述核签请求发送至该用户后，接收到该用户的确定信号，即提取与该用户相对应的签名信息对所述核签请求进行核签。\n\n[0056]在一个具体的实施例中，如图2所示，在该具体的实施例中，例如，存在有需要该用户进行处理的请假核签请求，将所述请假核签请求发送至该用户，该用户发送确定信号，当接收到确定信号时，则提取与该用户相对应的签名信息对所述请假核签请求进行核签，即步骤103；若未接收到该用户发送的确定信号，则无需提取与该用户相对应的签名信息，即步骤104。\n\n[0057]而判断是否有需要所述用户处理的核签请求，具体包括以下步骤：\n\n[0058]步骤201、基于核签请求的当前流程所需要的核签人生成核签人数据库。\n\n[0059]具体地，基于核签请求的当前流程，是指一个核签请求可能需要数个流程，而基于核签请求的当前流程所需要的核签人生产核签人数据库，是指对所有核签请求的当前流程中需要的核签人生成一个当前核签人数据库。\n\n[0060]在一个具体的实施例中，如图3，可以举一例，一个请假核签请求按流程顺序包括所属部门负责人A核签、人事部门负责人B核签、总经理C核签，而当前的流程处于总经理C核签。此外，当前还存在有报销核签请求、议会流程核签请求，每个核签请求都存在有各自的流程顺序，报销核签请求的当前流程处于人事部门负责人B核签，议会流程核签的当前流程处于总经理C核签。也即是，此时，生成的当前核签人数据库为总经理C、人事部门负责人B。\n\n[0061]步骤202、判断所述用户是否存在于所述核签人数据库中。\n\n[0062]具体地，在本实施例中，如图3，可以举一例，若当前处于登录状态的用户为总经理C，则总经理C存在于当前核签人数据库中，该总经理C需要处理的核签请求为请假核签请求及议会流程核签请求。若当前处于登录状态的用户为部门负责人A，则其不存在于所述核签人数据库中。\n\n[0063]所述确定信号，通过以下方式获取：\n\n[0064]接收所述用户点击确认键产生的确定信号；其中，所述确认键对应于所述核签请求。\n\n[0065]具体地，用户点击与所述核签请求相对应的确认键，从而，产生确定信号。\n\n[0066]当无法提取与所述用户相对应的签名信息时，向所述用户发送提示信息以提示所述用户录入签名信息。\n\n[0067]具体地，在一具体实施例中，如图4。\n\n[0068]步骤301、在接收到所述用户点击确认键产生的确定信号，但又无法提取到与所述用户相对应的签名信息时，就向所述用户发送提示信息，以提示所述用户录入签名信息。\n\n[0069]步骤302、在用户录入了签名信息后，再提取与该用户相对应的签名信息对所述核签请求进行核签。\n\n[0070]将所述签名信息存储并标记为与所述用户相对应。\n\n[0071]具体地，当用户录入了签名信息后，将所述签名信息储存，并将该签名信息标记为与该用户相对应。\n\n[0072]在一具体实施例中，如图4，可以举一例，当用户D输入签名信息后，将用户D的签名信息储存，并将该签名信息标记为与用户D相对应。在之后的电子签核中，则无需重新录入签名信息，在接收了用户D点击确认键产生的确定信号后，就可以提取用户D的该签名信息。\n\n[0073]实施例2\n\n[0074]为了对本发明进行进一步的说明，本发明实施例2还公开了一种电子核签设备，其应用于电子核签过程，如图5所示，包括：\n\n[0075]判断模块401，用于当用户处于登录状态时，判断是否有需要所述用户处理的核签请求；\n\n[0076]处理模块402，用于当判断结果为是时，发送所述签核请求至所述用户；\n\n[0077]签核模块403，用于当接收到所述用户的确定信号时，提取与所述用户相对应的签名信息对所述签核请求进行签核。\n\n[0078]判断模块401，具体用于：\n\n[0079]当用户处于登录状态时，基于核签请求的当前流程所需要的核签人生成核签人数据库；\n\n[0080]判断所述用户是否存在于所述核签人数据库中。\n\n[0081]确认模块404，用于接收所述用户点击确认键产生的确定信号；其中，所述确认键对应于所述核签请求。\n\n[0082]提醒模块405，用于当无法提取与所述用户相对应的签名信息时，向所述用户发送提示信息以提示所述用户录入签名信息；\n\n[0083]获取模块406，用于获取所述用户的签名信息。\n\n[0084]存储模块407，用于当所述用户录入签名信息时，将所述签名信息存储并标记为与所述用户相对应。\n\n[0085]本发明的一种电子核签方法及设备，其应用于电子核签过程，其中一种电子核签方法包括以下步骤：当用户处于登录状态时，判断是否有需要所述用户处理的核签请求；若判断结果为是，则发送所述核签请求至所述用户；当接收到所述用户的确定信号时，提取与所述用户相对应的签名信息对所述核签请求进行核签。因此，通过上述方法，通过接受用户的确定信号，提取与用户相对应的签名信息对文件进行电子核签，提高了用户核签电子文件的便利性，使用户核签电子文件时更高效。\n\n[0086]本领域技术人员可以理解附图只是一个优选实施场景的示意图，附图中的模块或流程并不一定是实施本发明所必须的。\n\n[0087]本领域技术人员可以理解实施场景中的装置中的模块可以按照实施场景描述进行分布于实施场景的装置中，也可以进行相应变化位于不同于本实施场景的一个或多个装置中。上述实施场景的模块可以合并为一个模块，也可以进一步拆分成多个子模块。\n\n[0088]上述本发明序号仅仅为了描述，不代表实施场景的优劣。\n\n[0089]以上公开的仅为本发明的几个具体实施场景，但是，本发明并非局限于此，任何本领域的技术人员能思之的变化都应落入本发明的保护范围。\n\n', '技术领域\n\n[0001]本发明涉及电子信息的技术领域，具体而言，涉及一种电子核签方法及设备。\n\n背景技术\n\n[0002]传统的核签，是在纸质文件上签署姓名，代表签字者的授权和认可，这在日常的工作和生活中随处需要。目前，对于办公流程中常见的文件审批方式，是员工书面打印待审批文件、交给审批人手动签字、扫描该签字文件、发送传真或上传到邮件发送，作为线上审批证明文件使用。\n\n[0003]然而，这种传统的核签方式往往会受到地域和时间的限制，使得核签的便捷性和效率都大打折扣，也使得核签双方的业务往来和授权受到了限制。\n\n发明内容\n\n[0004]有鉴于此，本发明在于提供一种电子核签方法及设备，以便于在核签电子文件中更便捷，更高效。\n\n[0005]具体的，本发明提出了以下具体的实施例：\n\n[0006]本发明实施例提出了一种电子核签方法，其应用于电子核签过程，包括以下步骤：\n\n[0007]当用户处于登录状态时，判断是否有需要所述用户处理的核签请求；\n\n[0008]若判断结果为是，则发送所述签核请求至所述用户；\n\n[0009]当接收到所述用户的确定信号时，提取与所述用户相对应的签名信息对所述签核请求进行签核。\n\n[0010]进一步地，所述判断是否有需要所述用户处理的核签请求，具体包括：\n\n[0011]基于核签请求的当前流程所需要的核签人生成核签人数据库；\n\n[0012]判断所述用户是否存在于所述核签人数据库中。\n\n[0013]进一步地，所述确定信号，通过以下方式获取：\n\n[0014]接收所述用户点击确认键产生的确定信号；其中，所述确认键对应于所述核签请求。\n\n[0015]进一步地，当无法提取与所述用户相对应的签名信息时，向所述用户发送提示信息以提示所述用户录入签名信息。\n\n[0016]进一步地，还包括：\n\n[0017]将所述签名信息存储并标记为与所述用户相对应。\n\n[0018]本发明实施例还提出了一种电子核签设备，其应用于电子核签过程，包括：\n\n[0019]判断模块，用于当用户处于登录状态时，判断是否有需要所述用户处理的核签请求；\n\n[0020]处理模块，用于当判断结果为是时，发送所述签核请求至所述用户；\n\n[0021]签核模块，用于当接收到所述用户的确定信号时，提取与所述用户相对应的签名信息对所述签核请求进行签核。\n\n[0022]进一步地，所述判断模块，具体用于：\n\n[0023]当用户处于登录状态时，基于核签请求的当前流程所需要的核签人生成核签人数据库；\n\n[0024]判断所述用户是否存在于所述核签人数据库中。\n\n[0025]进一步地，还包括：\n\n[0026]确认模块，用于接收所述用户点击确认键产生的确定信号；\n\n[0027]其中，所述确认键对应于所述核签请求。\n\n[0028]进一步地，还包括：\n\n[0029]提醒模块，用于当无法提取与所述用户相对应的签名信息时，向所述用户发送提示信息以提示所述用户录入签名信息；\n\n[0030]获取模块，用于获取所述用户的签名信息。\n\n[0031]进一步地，还包括：存储模块，用于当所述用户录入签名信息时，将所述签名信息存储并标记为与所述用户相对应。\n\n[0032]本发明的一种电子核签方法及设备，其应用于电子核签过程，其中一种电子核签方法包括以下步骤：当用户处于登录状态时，判断是否有需要所述用户处理的核签请求；若判断结果为是，则发送所述核签请求至所述用户；当接收到所述用户的确定信号时，提取与所述用户相对应的签名信息对所述核签请求进行核签。因此，通过上述方法，通过接受用户的确定信号，提取与用户相对应的签名信息对文件进行电子核签，提高了用户核签电子文件的便利性，使用户核签电子文件时更高效。\n\n附图说明\n\n[0033]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0034]图1是本发明较佳实施例提供的电子核签方法的流程图；\n\n[0035]图2是本发明较佳实施例提供的电子核签方法的流程图；\n\n[0036]图3是本发明较佳实施例提供的电子核签方法的流程图；\n\n[0037]图4是本发明较佳实施例提供的电子核签方法的流程图；\n\n[0038]图5是本发明较佳实施例提供的电子核签设备的连接示意图。\n\n具体实施方式\n\n[0039]在下文中，将更全面地描述本公开的各种实施例。本公开可具有各种实施例，并且可在其中做出调整和改变。然而，应理解：不存在将本公开的各种实施例限于在此公开的特定实施例的意图，而是应将本公开理解为涵盖落入本公开的各种实施例的精神和范围内的所有调整、等同物和/或可选方案。\n\n[0040]在下文中，可在本公开的各种实施例中使用的术语“包括”或“可包括”指示所公开的功能、操作或元件的存在，并且不限制一个或更多个功能、操作或元件的增加。此外，如在本公开的各种实施例中所使用，术语“包括”、“具有”及其同源词仅意在表示特定特征、数字、步骤、操作、元件、组件或前述项的组合，并且不应被理解为首先排除一个或更多个其它特征、数字、步骤、操作、元件、组件或前述项的组合的存在或增加一个或更多个特征、数字、步骤、操作、元件、组件或前述项的组合的可能性。\n\n[0041]在本公开的各种实施例中，表述“或”或“A或/和B中的至少一个”包括同时列出的文字的任何组合或所有组合。例如，表述“A或B”或“A或/和B中的至少一个”可包括A、可包括B或可包括A和B二者。\n\n[0042]在本公开的各种实施例中使用的表述(诸如“第一”、“第二”等)可修饰在各种实施例中的各种组成元件，不过可不限制相应组成元件。例如，以上表述并不限制所述元件的顺序和/或重要性。以上表述仅用于将一个元件与其它元件区别开的目的。例如，第一用户装置和第二用户装置指示不同用户装置，尽管二者都是用户装置。例如，在不脱离本公开的各种实施例的范围的情况下，第一元件可被称为第二元件，同样地，第二元件也可被称为第一元件。\n\n[0043]应注意到：如果描述将一个组成元件“连接”到另一组成元件，则可将第一组成元件直接连接到第二组成元件，并且可在第一组成元件和第二组成元件之间“连接”第三组成元件。相反地，当将一个组成元件“直接连接”到另一组成元件时，可理解为在第一组成元件和第二组成元件之间不存在第三组成元件。\n\n[0044]在本公开的各种实施例中使用的术语“用户”可指示使用电子装置的人或使用电子装置的装置(例如，人工智能电子装置)。\n\n[0045]在本公开的各种实施例中使用的术语仅用于描述特定实施例的目的并且并非意在限制本公开的各种实施例。如在此所使用，单数形式意在也包括复数形式，除非上下文清楚地另有指示。除非另有限定，否则在这里使用的所有术语(包括技术术语和科学术语)具有与本公开的各种实施例所属领域普通技术人员通常理解的含义相同的含义。所述术语(诸如在一般使用的词典中限定的术语)将被解释为具有与在相关技术领域中的语境含义相同的含义并且将不被解释为具有理想化的含义或过于正式的含义，除非在本公开的各种实施例中被清楚地限定。\n\n[0046]实施例1\n\n[0047]本发明实施例1提出了一种电子核签方法，其应用于电子核签过程，如图1所述，包括以下步骤：\n\n[0048]步骤101、当用户处于登录状态时，判断是否有需要所述用户处理的核签请求。\n\n[0049]具体地，在此通过一个具体的例子来对核签过程进行说明，在一个具体的实施例中，例如，当用户处于登录状态时，是指用户需要先进行登录，具体为需要发送登录请求，该登录请求可以包括有账户、密码等登录信息，而发起登录请求并通过登录验证的用户即为可以处理核签请求的用户。\n\n[0050]判断是否存在有需要该用户进行电子核签的请求，该请求可以是关于请假的电子核签流程，也可以是关于报销的电子核签流程，还可以是关于议会日程的电子核签流程等等。\n\n[0051]步骤102、若判断结果为是，则发送所述核签请求至所述用户；\n\n[0052]具体地，若步骤102中的判断结果为是，也即是存在有需要该用户进行处理的核签请求，则将所述核签请求发送至该用户。\n\n[0053]在一个具体的实施例中，如图1所示，在该具体的实施例中，若判断结果为否，则继续判断是否存在有需要该用户进行处理的核签请求。\n\n[0054]步骤103、当接收到所述用户的确定信号时，提取与所述用户相对应的签名信息对所述核签请求进行核签。\n\n[0055]具体地，当存在需要该用户进行处理的核签请求，并将所述核签请求发送至该用户后，接收到该用户的确定信号，即提取与该用户相对应的签名信息对所述核签请求进行核签。\n\n[0056]在一个具体的实施例中，如图2所示，在该具体的实施例中，例如，存在有需要该用户进行处理的请假核签请求，将所述请假核签请求发送至该用户，该用户发送确定信号，当接收到确定信号时，则提取与该用户相对应的签名信息对所述请假核签请求进行核签，即步骤103；若未接收到该用户发送的确定信号，则无需提取与该用户相对应的签名信息，即步骤104。\n\n[0057]而判断是否有需要所述用户处理的核签请求，具体包括以下步骤：\n\n[0058]步骤201、基于核签请求的当前流程所需要的核签人生成核签人数据库。\n\n[0059]具体地，基于核签请求的当前流程，是指一个核签请求可能需要数个流程，而基于核签请求的当前流程所需要的核签人生产核签人数据库，是指对所有核签请求的当前流程中需要的核签人生成一个当前核签人数据库。\n\n[0060]在一个具体的实施例中，如图3，可以举一例，一个请假核签请求按流程顺序包括所属部门负责人A核签、人事部门负责人B核签、总经理C核签，而当前的流程处于总经理C核签。此外，当前还存在有报销核签请求、议会流程核签请求，每个核签请求都存在有各自的流程顺序，报销核签请求的当前流程处于人事部门负责人B核签，议会流程核签的当前流程处于总经理C核签。也即是，此时，生成的当前核签人数据库为总经理C、人事部门负责人B。\n\n[0061]步骤202、判断所述用户是否存在于所述核签人数据库中。\n\n[0062]具体地，在本实施例中，如图3，可以举一例，若当前处于登录状态的用户为总经理C，则总经理C存在于当前核签人数据库中，该总经理C需要处理的核签请求为请假核签请求及议会流程核签请求。若当前处于登录状态的用户为部门负责人A，则其不存在于所述核签人数据库中。\n\n[0063]所述确定信号，通过以下方式获取：\n\n[0064]接收所述用户点击确认键产生的确定信号；其中，所述确认键对应于所述核签请求。\n\n[0065]具体地，用户点击与所述核签请求相对应的确认键，从而，产生确定信号。\n\n[0066]当无法提取与所述用户相对应的签名信息时，向所述用户发送提示信息以提示所述用户录入签名信息。\n\n[0067]具体地，在一具体实施例中，如图4。\n\n[0068]步骤301、在接收到所述用户点击确认键产生的确定信号，但又无法提取到与所述用户相对应的签名信息时，就向所述用户发送提示信息，以提示所述用户录入签名信息。\n\n[0069]步骤302、在用户录入了签名信息后，再提取与该用户相对应的签名信息对所述核签请求进行核签。\n\n[0070]将所述签名信息存储并标记为与所述用户相对应。\n\n[0071]具体地，当用户录入了签名信息后，将所述签名信息储存，并将该签名信息标记为与该用户相对应。\n\n[0072]在一具体实施例中，如图4，可以举一例，当用户D输入签名信息后，将用户D的签名信息储存，并将该签名信息标记为与用户D相对应。在之后的电子签核中，则无需重新录入签名信息，在接收了用户D点击确认键产生的确定信号后，就可以提取用户D的该签名信息。\n\n[0073]实施例2\n\n[0074]为了对本发明进行进一步的说明，本发明实施例2还公开了一种电子核签设备，其应用于电子核签过程，如图5所示，包括：\n\n[0075]判断模块401，用于当用户处于登录状态时，判断是否有需要所述用户处理的核签请求；\n\n[0076]处理模块402，用于当判断结果为是时，发送所述签核请求至所述用户；\n\n[0077]签核模块403，用于当接收到所述用户的确定信号时，提取与所述用户相对应的签名信息对所述签核请求进行签核。\n\n[0078]判断模块401，具体用于：\n\n[0079]当用户处于登录状态时，基于核签请求的当前流程所需要的核签人生成核签人数据库；\n\n[0080]判断所述用户是否存在于所述核签人数据库中。\n\n[0081]确认模块404，用于接收所述用户点击确认键产生的确定信号；其中，所述确认键对应于所述核签请求。\n\n[0082]提醒模块405，用于当无法提取与所述用户相对应的签名信息时，向所述用户发送提示信息以提示所述用户录入签名信息；\n\n[0083]获取模块406，用于获取所述用户的签名信息。\n\n[0084]存储模块407，用于当所述用户录入签名信息时，将所述签名信息存储并标记为与所述用户相对应。\n\n[0085]本发明的一种电子核签方法及设备，其应用于电子核签过程，其中一种电子核签方法包括以下步骤：当用户处于登录状态时，判断是否有需要所述用户处理的核签请求；若判断结果为是，则发送所述核签请求至所述用户；当接收到所述用户的确定信号时，提取与所述用户相对应的签名信息对所述核签请求进行核签。因此，通过上述方法，通过接受用户的确定信号，提取与用户相对应的签名信息对文件进行电子核签，提高了用户核签电子文件的便利性，使用户核签电子文件时更高效。\n\n[0086]本领域技术人员可以理解附图只是一个优选实施场景的示意图，附图中的模块或流程并不一定是实施本发明所必须的。\n\n[0087]本领域技术人员可以理解实施场景中的装置中的模块可以按照实施场景描述进行分布于实施场景的装置中，也可以进行相应变化位于不同于本实施场景的一个或多个装置中。上述实施场景的模块可以合并为一个模块，也可以进一步拆分成多个子模块。\n\n[0088]上述本发明序号仅仅为了描述，不代表实施场景的优劣。\n\n[0089]以上公开的仅为本发明的几个具体实施场景，但是，本发明并非局限于此，任何本领域的技术人员能思之的变化都应落入本发明的保护范围。\n\n');
INSERT INTO `os_patent_instruction_text` VALUES (11142, 24080, '技术领域\n\n[0001]本发明涉及网络技术领域，特别涉及一种签核发起用户管理方法和设备。\n\n背景技术\n\n[0002]在现有技术中，文件的签核一般是人工来进行的，在具体的过程中，需要将相应的文件打印出来，并以人工的方式传递给各个需要签核的签核人处，操作流程繁琐，费时费力，效率低下；且当某位签核人不在的时候，就会耽搁整个流程的正常进行。\n\n[0003]为此，目前有提到有一种电子签核的方式，但这种方式安全性不高，影响用户的体验。\n\n发明内容\n\n[0004]针对现有技术中的缺陷，本发明提出了一种签核发起用户管理方法和设备，用以克服现有技术中的缺陷，提高电子签核的安全性，保障用户的体验。\n\n[0005]具体的，本发明提出了以下具体的实施例：\n\n[0006]本发明实施例提出了一种签核发起用户管理方法，应用于电子签核过程，包括：\n\n[0007]当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；\n\n[0008]若判断结果为是，对所述签核发起用户进行多次实时操作验证；\n\n[0009]若验证全部通过，则允许所述签核发起用户正常登录以便后续发起电子签核流程。\n\n[0010]在一个具体的实施例中，该方法还包括：\n\n[0011]若验证不完全通过，则禁止所述签核发起用户进行登录。\n\n[0012]在一个具体的实施例中，所述禁止所述签核发起用户进行登录，包括：\n\n[0013]将所述签核发起用户添加进黑名单，以禁止所述签核发起用户登录。\n\n[0014]在一个具体的实施例中，所述登录环境具体包括登录IP；\n\n[0015]所述检测所述签核发起用户的登录环境是否异常，包括：\n\n[0016]获取所述签核发起用户发送登录请求时的登录IP；\n\n[0017]判断所述登录IP是否存在于预先存储的异常IP数据库中；\n\n[0018]若判断结果为是，则确定所述签核发起用户的登录环境异常；\n\n[0019]若判断结果为否，则确定所述签核发起用户的登录环境不异常。\n\n[0020]在一个具体的实施例中，所述对所述签核发起用户进行多次实时操作验证，包括：\n\n[0021]生成多个轨迹验证信息，其中，各所述轨迹验证信息中包含有一定的轨迹的图案；\n\n[0022]基于所述轨迹验证信息提示所述签核发起用户按照所述图案执行相同的操作，并获取操作的结果；\n\n[0023]针对各所述轨迹验证信息，比对所述操作的结果与所述轨迹验证信息中的轨迹是否一致；\n\n[0024]若判断结果为是，则确定针对所述轨迹验证信息的验证通过；若判断结果为否，则确定针对所述轨迹验证信息的验证不通过；\n\n[0025]若参与验证的所有轨迹验证信息都验证通过，确定验证全部通过；\n\n[0026]若参与验证的所有轨迹验证信息并非都验证通过，确定验证不完全通过。\n\n[0027]本发明实施例还提出了一种签核发起用户管理设备，应用于电子签核过程，包括：\n\n[0028]检测模块，用于当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；\n\n[0029]验证模块，用于当判断结果为是时，对所述签核发起用户进行多次实时操作验证；\n\n[0030]处理模块，用于当验证全部通过时，允许所述签核发起用户正常登录以便后续发起电子签核流程。\n\n[0031]在一个具体的实施例中，该设备还包括：\n\n[0032]禁止模块，用于当验证不完全通过时，禁止所述签核发起用户进行登录。\n\n[0033]在一个具体的实施例中，所述禁止模块，用于：\n\n[0034]将所述签核发起用户添加进黑名单，以禁止所述签核发起用户登录。\n\n[0035]在一个具体的实施例中，所述登录环境具体包括登录IP；\n\n[0036]所述检测模块，用于：\n\n[0037]获取所述签核发起用户发送登录请求时的登录IP；\n\n[0038]判断所述登录IP是否存在于预先存储的异常IP数据库中；\n\n[0039]若判断结果为是，则确定所述签核发起用户的登录环境异常；\n\n[0040]若判断结果为否，则确定所述签核发起用户的登录环境不异常。\n\n[0041]在一个具体的实施例中，所述验证模块，用于：\n\n[0042]生成多个轨迹验证信息，其中，各所述轨迹验证信息中包含有一定的轨迹的图案；\n\n[0043]基于所述轨迹验证信息提示所述签核发起用户按照所述图案执行相同的操作，并获取操作的结果；\n\n[0044]针对各所述轨迹验证信息，比对所述操作的结果与所述轨迹验证信息中的轨迹是否一致；\n\n[0045]若判断结果为是，则确定针对所述轨迹验证信息的验证通过；若判断结果为否，则确定针对所述轨迹验证信息的验证不通过；\n\n[0046]若参与验证的所有轨迹验证信息都验证通过，确定验证全部通过；\n\n[0047]若参与验证的所有轨迹验证信息并非都验证通过，确定验证不完全通过。\n\n[0048]与现有技术相比，本发明实施例提出了一种签核发起用户管理方法和设备，应用于电子签核过程，其中，该签核发起用户管理方法包括：当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；若判断结果为是，对所述签核发起用户进行多次实时操作验证；若验证全部通过，则允许所述签核发起用户正常登录以便后续发起电子签核流程。以此，通过上述方法，通过对签核发起用户进行验证，提高了电子签核过程的安全性，保障了用户的使用体验。\n\n附图说明\n\n[0049]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0050]图1为本发明实施例提出的一种签核发起用户管理方法流程示意图；\n\n[0051]图2为本发明实施例提出的一种进行多次实时操作验证的方法流程示意图；\n\n[0052]图3为本发明实施例提出的一种签核发起用户管理设备的结构示意图；\n\n[0053]图4为本发明实施例提出的一种签核发起用户管理设备的结构示意图。\n\n具体实施方式\n\n[0054]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。通常在此处附图中描述和出示的本发明实施例的组件可以以各种不同的配置来布置和设计。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0055]针对现有技术中的缺陷，本发明人发现在实际的应用中，签核发起用户出现的安全问题较大，为此，本发明提出了一种签核发起用户管理方法和设备，应用于电子签核过程，用以提高电子签核过程的安全性。\n\n[0056]具体的，本发明提出了以下具体的实施例：\n\n[0057]实施例1\n\n[0058]本发明实施例1提出了一种签核发起用户管理方法，应用于电子签核过程，如图1所示，包括以下步骤：\n\n[0059]步骤101、当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；\n\n[0060]步骤102、若判断结果为是，对所述签核发起用户进行多次实时操作验证；\n\n[0061]步骤103、若验证全部通过，则允许所述签核发起用户正常登录以便后续发起电子签核流程。\n\n[0062]具体的，在此通过一个具体的例子来对签核过程进行说明，在一个具体的实施例中，例如可以为请假，某公司的员工A想向公司请假，为此需要发起一个关于请假的电子签核流程，在该电子签核的过程中，员工A即为签核发起用户。\n\n[0063]而除了关于请假的电子签核以外，电子签核还可以有很多其他的实施例，例如关于报销的电子签核，以及关于升迁命令的电子签核等等，而对应的，发起签核过程的用户即为签核发起用户。\n\n[0064]签核发起用户首先需要登录，才能发起签核过程，因此签核发起用户会发送登录请求，具体的登录请求可以包括有账户，密码等登录信息，在一个具体的实施例中，输入账户以及密码的环境即为登录环境。\n\n[0065]在签核发起用户进行登录的过程中，也即发送登录请求时，对签核发起用户所在的登录环境进行检测，检测登录环境是否异常；具体的一个检测实施例可以如下，\n\n[0066]考虑在网络环境中，IP可以很大程度代表登录环境，因此可以选取登录IP代表签核发起用户所在的登录环境；\n\n[0067]在此情况下，步骤101、也即所述检测所述签核发起用户的登录环境是否异常，包括：\n\n[0068]获取所述签核发起用户发送登录请求时的登录IP；\n\n[0069]判断所述登录IP是否存在于预先存储的异常IP数据库中；\n\n[0070]若判断结果为是，则确定所述签核发起用户的登录环境异常；\n\n[0071]若判断结果为否，则确定所述签核发起用户的登录环境不异常。\n\n[0072]具体的，在以上具体的实施例中，会事先获取到异常IP的数据，并基于该异常IP的数据生成异常IP数据库，具体的异常IP数据可以从关于安全的数据库中进行获取，以此异常IP会与例如诈骗等行为有直接或者间接的关系，以此会存在有风险。\n\n[0073]由此，通过判断签核发起用户发送登录请求时的登录IP是否为有风险的IP时通过判断登录IP是否存在于异常IP数据库中来进行的，若登录IP存在于异常IP数据库中,则说明登录IP是异常的IP，进而可以判断出登录环境异常(具体的异常，有一种可能是签核发起用户的账户被木门等盗取了，导致步骤101中的登录请求时木门批量进行的操作)，反之，则说明登录环境不异常，是正常的。\n\n[0074]在步骤101中，会有两个结果，一个是验证结果为登录环境异常，另一个验证结果为登录环境不异常，也即登录环境正常。\n\n[0075]若是验证结果为登录环境不异常，则可以允许所述签核发起用户正常登录以便后续发起电子签核流程，也即正常进行后续流程；若是验证结果为登录环境异常，则需要继续进行步骤102，也即对签核发起用户进行多次实时操作验证。\n\n[0076]在一个具体的实施例中，所述对所述签核发起用户进行多次实时操作验证，如图2所示，包括以下步骤：\n\n[0077]步骤11、生成多个轨迹验证信息，其中，各所述轨迹验证信息中包含有一定的轨迹的图案；\n\n[0078]步骤12、基于所述轨迹验证信息提示所述签核发起用户按照所述图案执行相同的操作，并获取操作的结果；\n\n[0079]步骤13、针对各所述轨迹验证信息，比对所述操作的结果与所述轨迹验证信息中的轨迹是否一致；\n\n[0080]步骤14、若判断结果为是，则确定针对所述轨迹验证信息的验证通过；\n\n[0081]步骤15、若判断结果为否，则确定针对所述轨迹验证信息的验证不通过；\n\n[0082]步骤16、若参与验证的所有轨迹验证信息都验证通过，确定验证全部通过；\n\n[0083]步骤17、若参与验证的所有轨迹验证信息并非都验证通过，确定验证不完全通过。\n\n[0084]具体的，在此以一个具体的例子来对上述的实时操作验证进行说明，生成的轨迹验证信息中包括例如“S”形轨迹，或者从左到右的轨迹，从上到下的轨迹等等，具体的轨迹可以灵活地设置，在进行验证时，将轨迹验证信息展示给签核发起用户，以指示所述签核发起用户按照其中的轨迹在对应的输入端，例如触控显示器等上画出同样轨迹或者同样轨迹趋势的图案，然后对签核发起用户所绘的轨迹图案与轨迹验证信息众的图案进行比对，具体的可以设置一个相似度阈值，若比对的结果为相似程度超过相似度阈值，则认为所述操作的结果与所述轨迹验证信息中的轨迹一致；反之，则认为不一致。\n\n[0085]由于轨迹验证信息的数量会有多个，针对每个轨迹验证信息，进行与上述过程相似的操作，并确定比对的结果。\n\n[0086]假设有3个轨迹验证信息，每个轨迹验证信息的比对结果都是一致，也即验证全部都通过，在此情况下确定验证全部通过；否则，若至少存在有一个轨迹验证信息的验证不通过，则确定验证不完全通过。\n\n[0087]步骤102有两个结果，一个结果是验证全部通过，在此情况下，允许所述签核发起用户正常登录以便后续发起电子签核流程。另一个结果则是验证不完全通过，在此情况下，执行以下步骤：\n\n[0088]禁止所述签核发起用户进行登录。\n\n[0089]而具体禁止的方式则是：将所述签核发起用户添加进黑名单，以禁止所述签核发起用户登录。\n\n[0090]本发明实施例1提出了一种签核发起用户管理方法，应用于电子签核过程，包括：当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；若判断结果为是，对所述签核发起用户进行多次实时操作验证；若验证全部通过，则允许所述签核发起用户正常登录以便后续发起电子签核流程。以此，通过上述方法，通过对签核发起用户进行验证，提高了电子签核过程的安全性，保障了用户的使用体验。\n\n[0091]实施例2\n\n[0092]为了对本发明进行进一步的说明，本发明实施例2还公开了一种签核发起用户管理设备，应用于电子签核过程，如图3所示，包括：\n\n[0093]检测模块201，用于当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；\n\n[0094]验证模块202，用于当判断结果为是时，对所述签核发起用户进行多次实时操作验证；\n\n[0095]处理模块203，用于当验证全部通过时，允许所述签核发起用户正常登录以便后续发起电子签核流程。\n\n[0096]在一个具体的实施例中，如图4所示，该设备还包括：\n\n[0097]禁止模块204，用于当验证不完全通过时，禁止所述签核发起用户进行登录。\n\n[0098]在一个具体的实施例中，所述禁止模块，用于：\n\n[0099]将所述签核发起用户添加进黑名单，以禁止所述签核发起用户登录。\n\n[0100]在一个具体的实施例中，所述登录环境具体包括登录IP；\n\n[0101]所述检测模块，用于：\n\n[0102]获取所述签核发起用户发送登录请求时的登录IP；\n\n[0103]判断所述登录IP是否存在于预先存储的异常IP数据库中；\n\n[0104]若判断结果为是，则确定所述签核发起用户的登录环境异常；\n\n[0105]若判断结果为否，则确定所述签核发起用户的登录环境不异常。\n\n[0106]在一个具体的实施例中，所述验证模块202，用于：\n\n[0107]生成多个轨迹验证信息，其中，各所述轨迹验证信息中包含有一定的轨迹的图案；\n\n[0108]基于所述轨迹验证信息提示所述签核发起用户按照所述图案执行相同的操作，并获取操作的结果；\n\n[0109]针对各所述轨迹验证信息，比对所述操作的结果与所述轨迹验证信息中的轨迹是否一致；\n\n[0110]若判断结果为是，则确定针对所述轨迹验证信息的验证通过；若判断结果为否，则确定针对所述轨迹验证信息的验证不通过；\n\n[0111]若参与验证的所有轨迹验证信息都验证通过，确定验证全部通过；\n\n[0112]若参与验证的所有轨迹验证信息并非都验证通过，确定验证不完全通过。\n\n[0113]与现有技术相比，本发明实施例提出了一种签核发起用户管理方法和设备，应用于电子签核过程，其中，该签核发起用户管理方法包括：当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；若判断结果为是，对所述签核发起用户进行多次实时操作验证；若验证全部通过，则允许所述签核发起用户正常登录以便后续发起电子签核流程。以此，通过上述方法，通过对签核发起用户进行验证，提高了电子签核过程的安全性，保障了用户的使用体验。\n\n[0114]本领域技术人员可以理解附图只是一个优选实施场景的示意图，附图中的模块或流程并不一定是实施本发明所必须的。\n\n[0115]本领域技术人员可以理解实施场景中的装置中的模块可以按照实施场景描述进行分布于实施场景的装置中，也可以进行相应变化位于不同于本实施场景的一个或多个装置中。上述实施场景的模块可以合并为一个模块，也可以进一步拆分成多个子模块。\n\n[0116]上述本发明序号仅仅为了描述，不代表实施场景的优劣。\n\n[0117]以上公开的仅为本发明的几个具体实施场景，但是，本发明并非局限于此，任何本领域的技术人员能思之的变化都应落入本发明的保护范围。\n\n', '技术领域\n\n[0001]本发明涉及网络技术领域，特别涉及一种签核发起用户管理方法和设备。\n\n背景技术\n\n[0002]在现有技术中，文件的签核一般是人工来进行的，在具体的过程中，需要将相应的文件打印出来，并以人工的方式传递给各个需要签核的签核人处，操作流程繁琐，费时费力，效率低下；且当某位签核人不在的时候，就会耽搁整个流程的正常进行。\n\n[0003]为此，目前有提到有一种电子签核的方式，但这种方式安全性不高，影响用户的体验。\n\n发明内容\n\n[0004]针对现有技术中的缺陷，本发明提出了一种签核发起用户管理方法和设备，用以克服现有技术中的缺陷，提高电子签核的安全性，保障用户的体验。\n\n[0005]具体的，本发明提出了以下具体的实施例：\n\n[0006]本发明实施例提出了一种签核发起用户管理方法，应用于电子签核过程，包括：\n\n[0007]当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；\n\n[0008]若判断结果为是，对所述签核发起用户进行多次实时操作验证；\n\n[0009]若验证全部通过，则允许所述签核发起用户正常登录以便后续发起电子签核流程。\n\n[0010]在一个具体的实施例中，该方法还包括：\n\n[0011]若验证不完全通过，则禁止所述签核发起用户进行登录。\n\n[0012]在一个具体的实施例中，所述禁止所述签核发起用户进行登录，包括：\n\n[0013]将所述签核发起用户添加进黑名单，以禁止所述签核发起用户登录。\n\n[0014]在一个具体的实施例中，所述登录环境具体包括登录IP；\n\n[0015]所述检测所述签核发起用户的登录环境是否异常，包括：\n\n[0016]获取所述签核发起用户发送登录请求时的登录IP；\n\n[0017]判断所述登录IP是否存在于预先存储的异常IP数据库中；\n\n[0018]若判断结果为是，则确定所述签核发起用户的登录环境异常；\n\n[0019]若判断结果为否，则确定所述签核发起用户的登录环境不异常。\n\n[0020]在一个具体的实施例中，所述对所述签核发起用户进行多次实时操作验证，包括：\n\n[0021]生成多个轨迹验证信息，其中，各所述轨迹验证信息中包含有一定的轨迹的图案；\n\n[0022]基于所述轨迹验证信息提示所述签核发起用户按照所述图案执行相同的操作，并获取操作的结果；\n\n[0023]针对各所述轨迹验证信息，比对所述操作的结果与所述轨迹验证信息中的轨迹是否一致；\n\n[0024]若判断结果为是，则确定针对所述轨迹验证信息的验证通过；若判断结果为否，则确定针对所述轨迹验证信息的验证不通过；\n\n[0025]若参与验证的所有轨迹验证信息都验证通过，确定验证全部通过；\n\n[0026]若参与验证的所有轨迹验证信息并非都验证通过，确定验证不完全通过。\n\n[0027]本发明实施例还提出了一种签核发起用户管理设备，应用于电子签核过程，包括：\n\n[0028]检测模块，用于当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；\n\n[0029]验证模块，用于当判断结果为是时，对所述签核发起用户进行多次实时操作验证；\n\n[0030]处理模块，用于当验证全部通过时，允许所述签核发起用户正常登录以便后续发起电子签核流程。\n\n[0031]在一个具体的实施例中，该设备还包括：\n\n[0032]禁止模块，用于当验证不完全通过时，禁止所述签核发起用户进行登录。\n\n[0033]在一个具体的实施例中，所述禁止模块，用于：\n\n[0034]将所述签核发起用户添加进黑名单，以禁止所述签核发起用户登录。\n\n[0035]在一个具体的实施例中，所述登录环境具体包括登录IP；\n\n[0036]所述检测模块，用于：\n\n[0037]获取所述签核发起用户发送登录请求时的登录IP；\n\n[0038]判断所述登录IP是否存在于预先存储的异常IP数据库中；\n\n[0039]若判断结果为是，则确定所述签核发起用户的登录环境异常；\n\n[0040]若判断结果为否，则确定所述签核发起用户的登录环境不异常。\n\n[0041]在一个具体的实施例中，所述验证模块，用于：\n\n[0042]生成多个轨迹验证信息，其中，各所述轨迹验证信息中包含有一定的轨迹的图案；\n\n[0043]基于所述轨迹验证信息提示所述签核发起用户按照所述图案执行相同的操作，并获取操作的结果；\n\n[0044]针对各所述轨迹验证信息，比对所述操作的结果与所述轨迹验证信息中的轨迹是否一致；\n\n[0045]若判断结果为是，则确定针对所述轨迹验证信息的验证通过；若判断结果为否，则确定针对所述轨迹验证信息的验证不通过；\n\n[0046]若参与验证的所有轨迹验证信息都验证通过，确定验证全部通过；\n\n[0047]若参与验证的所有轨迹验证信息并非都验证通过，确定验证不完全通过。\n\n[0048]与现有技术相比，本发明实施例提出了一种签核发起用户管理方法和设备，应用于电子签核过程，其中，该签核发起用户管理方法包括：当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；若判断结果为是，对所述签核发起用户进行多次实时操作验证；若验证全部通过，则允许所述签核发起用户正常登录以便后续发起电子签核流程。以此，通过上述方法，通过对签核发起用户进行验证，提高了电子签核过程的安全性，保障了用户的使用体验。\n\n附图说明\n\n[0049]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0050]图1为本发明实施例提出的一种签核发起用户管理方法流程示意图；\n\n[0051]图2为本发明实施例提出的一种进行多次实时操作验证的方法流程示意图；\n\n[0052]图3为本发明实施例提出的一种签核发起用户管理设备的结构示意图；\n\n[0053]图4为本发明实施例提出的一种签核发起用户管理设备的结构示意图。\n\n具体实施方式\n\n[0054]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。通常在此处附图中描述和出示的本发明实施例的组件可以以各种不同的配置来布置和设计。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0055]针对现有技术中的缺陷，本发明人发现在实际的应用中，签核发起用户出现的安全问题较大，为此，本发明提出了一种签核发起用户管理方法和设备，应用于电子签核过程，用以提高电子签核过程的安全性。\n\n[0056]具体的，本发明提出了以下具体的实施例：\n\n[0057]实施例1\n\n[0058]本发明实施例1提出了一种签核发起用户管理方法，应用于电子签核过程，如图1所示，包括以下步骤：\n\n[0059]步骤101、当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；\n\n[0060]步骤102、若判断结果为是，对所述签核发起用户进行多次实时操作验证；\n\n[0061]步骤103、若验证全部通过，则允许所述签核发起用户正常登录以便后续发起电子签核流程。\n\n[0062]具体的，在此通过一个具体的例子来对签核过程进行说明，在一个具体的实施例中，例如可以为请假，某公司的员工A想向公司请假，为此需要发起一个关于请假的电子签核流程，在该电子签核的过程中，员工A即为签核发起用户。\n\n[0063]而除了关于请假的电子签核以外，电子签核还可以有很多其他的实施例，例如关于报销的电子签核，以及关于升迁命令的电子签核等等，而对应的，发起签核过程的用户即为签核发起用户。\n\n[0064]签核发起用户首先需要登录，才能发起签核过程，因此签核发起用户会发送登录请求，具体的登录请求可以包括有账户，密码等登录信息，在一个具体的实施例中，输入账户以及密码的环境即为登录环境。\n\n[0065]在签核发起用户进行登录的过程中，也即发送登录请求时，对签核发起用户所在的登录环境进行检测，检测登录环境是否异常；具体的一个检测实施例可以如下，\n\n[0066]考虑在网络环境中，IP可以很大程度代表登录环境，因此可以选取登录IP代表签核发起用户所在的登录环境；\n\n[0067]在此情况下，步骤101、也即所述检测所述签核发起用户的登录环境是否异常，包括：\n\n[0068]获取所述签核发起用户发送登录请求时的登录IP；\n\n[0069]判断所述登录IP是否存在于预先存储的异常IP数据库中；\n\n[0070]若判断结果为是，则确定所述签核发起用户的登录环境异常；\n\n[0071]若判断结果为否，则确定所述签核发起用户的登录环境不异常。\n\n[0072]具体的，在以上具体的实施例中，会事先获取到异常IP的数据，并基于该异常IP的数据生成异常IP数据库，具体的异常IP数据可以从关于安全的数据库中进行获取，以此异常IP会与例如诈骗等行为有直接或者间接的关系，以此会存在有风险。\n\n[0073]由此，通过判断签核发起用户发送登录请求时的登录IP是否为有风险的IP时通过判断登录IP是否存在于异常IP数据库中来进行的，若登录IP存在于异常IP数据库中,则说明登录IP是异常的IP，进而可以判断出登录环境异常(具体的异常，有一种可能是签核发起用户的账户被木门等盗取了，导致步骤101中的登录请求时木门批量进行的操作)，反之，则说明登录环境不异常，是正常的。\n\n[0074]在步骤101中，会有两个结果，一个是验证结果为登录环境异常，另一个验证结果为登录环境不异常，也即登录环境正常。\n\n[0075]若是验证结果为登录环境不异常，则可以允许所述签核发起用户正常登录以便后续发起电子签核流程，也即正常进行后续流程；若是验证结果为登录环境异常，则需要继续进行步骤102，也即对签核发起用户进行多次实时操作验证。\n\n[0076]在一个具体的实施例中，所述对所述签核发起用户进行多次实时操作验证，如图2所示，包括以下步骤：\n\n[0077]步骤11、生成多个轨迹验证信息，其中，各所述轨迹验证信息中包含有一定的轨迹的图案；\n\n[0078]步骤12、基于所述轨迹验证信息提示所述签核发起用户按照所述图案执行相同的操作，并获取操作的结果；\n\n[0079]步骤13、针对各所述轨迹验证信息，比对所述操作的结果与所述轨迹验证信息中的轨迹是否一致；\n\n[0080]步骤14、若判断结果为是，则确定针对所述轨迹验证信息的验证通过；\n\n[0081]步骤15、若判断结果为否，则确定针对所述轨迹验证信息的验证不通过；\n\n[0082]步骤16、若参与验证的所有轨迹验证信息都验证通过，确定验证全部通过；\n\n[0083]步骤17、若参与验证的所有轨迹验证信息并非都验证通过，确定验证不完全通过。\n\n[0084]具体的，在此以一个具体的例子来对上述的实时操作验证进行说明，生成的轨迹验证信息中包括例如“S”形轨迹，或者从左到右的轨迹，从上到下的轨迹等等，具体的轨迹可以灵活地设置，在进行验证时，将轨迹验证信息展示给签核发起用户，以指示所述签核发起用户按照其中的轨迹在对应的输入端，例如触控显示器等上画出同样轨迹或者同样轨迹趋势的图案，然后对签核发起用户所绘的轨迹图案与轨迹验证信息众的图案进行比对，具体的可以设置一个相似度阈值，若比对的结果为相似程度超过相似度阈值，则认为所述操作的结果与所述轨迹验证信息中的轨迹一致；反之，则认为不一致。\n\n[0085]由于轨迹验证信息的数量会有多个，针对每个轨迹验证信息，进行与上述过程相似的操作，并确定比对的结果。\n\n[0086]假设有3个轨迹验证信息，每个轨迹验证信息的比对结果都是一致，也即验证全部都通过，在此情况下确定验证全部通过；否则，若至少存在有一个轨迹验证信息的验证不通过，则确定验证不完全通过。\n\n[0087]步骤102有两个结果，一个结果是验证全部通过，在此情况下，允许所述签核发起用户正常登录以便后续发起电子签核流程。另一个结果则是验证不完全通过，在此情况下，执行以下步骤：\n\n[0088]禁止所述签核发起用户进行登录。\n\n[0089]而具体禁止的方式则是：将所述签核发起用户添加进黑名单，以禁止所述签核发起用户登录。\n\n[0090]本发明实施例1提出了一种签核发起用户管理方法，应用于电子签核过程，包括：当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；若判断结果为是，对所述签核发起用户进行多次实时操作验证；若验证全部通过，则允许所述签核发起用户正常登录以便后续发起电子签核流程。以此，通过上述方法，通过对签核发起用户进行验证，提高了电子签核过程的安全性，保障了用户的使用体验。\n\n[0091]实施例2\n\n[0092]为了对本发明进行进一步的说明，本发明实施例2还公开了一种签核发起用户管理设备，应用于电子签核过程，如图3所示，包括：\n\n[0093]检测模块201，用于当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；\n\n[0094]验证模块202，用于当判断结果为是时，对所述签核发起用户进行多次实时操作验证；\n\n[0095]处理模块203，用于当验证全部通过时，允许所述签核发起用户正常登录以便后续发起电子签核流程。\n\n[0096]在一个具体的实施例中，如图4所示，该设备还包括：\n\n[0097]禁止模块204，用于当验证不完全通过时，禁止所述签核发起用户进行登录。\n\n[0098]在一个具体的实施例中，所述禁止模块，用于：\n\n[0099]将所述签核发起用户添加进黑名单，以禁止所述签核发起用户登录。\n\n[0100]在一个具体的实施例中，所述登录环境具体包括登录IP；\n\n[0101]所述检测模块，用于：\n\n[0102]获取所述签核发起用户发送登录请求时的登录IP；\n\n[0103]判断所述登录IP是否存在于预先存储的异常IP数据库中；\n\n[0104]若判断结果为是，则确定所述签核发起用户的登录环境异常；\n\n[0105]若判断结果为否，则确定所述签核发起用户的登录环境不异常。\n\n[0106]在一个具体的实施例中，所述验证模块202，用于：\n\n[0107]生成多个轨迹验证信息，其中，各所述轨迹验证信息中包含有一定的轨迹的图案；\n\n[0108]基于所述轨迹验证信息提示所述签核发起用户按照所述图案执行相同的操作，并获取操作的结果；\n\n[0109]针对各所述轨迹验证信息，比对所述操作的结果与所述轨迹验证信息中的轨迹是否一致；\n\n[0110]若判断结果为是，则确定针对所述轨迹验证信息的验证通过；若判断结果为否，则确定针对所述轨迹验证信息的验证不通过；\n\n[0111]若参与验证的所有轨迹验证信息都验证通过，确定验证全部通过；\n\n[0112]若参与验证的所有轨迹验证信息并非都验证通过，确定验证不完全通过。\n\n[0113]与现有技术相比，本发明实施例提出了一种签核发起用户管理方法和设备，应用于电子签核过程，其中，该签核发起用户管理方法包括：当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；若判断结果为是，对所述签核发起用户进行多次实时操作验证；若验证全部通过，则允许所述签核发起用户正常登录以便后续发起电子签核流程。以此，通过上述方法，通过对签核发起用户进行验证，提高了电子签核过程的安全性，保障了用户的使用体验。\n\n[0114]本领域技术人员可以理解附图只是一个优选实施场景的示意图，附图中的模块或流程并不一定是实施本发明所必须的。\n\n[0115]本领域技术人员可以理解实施场景中的装置中的模块可以按照实施场景描述进行分布于实施场景的装置中，也可以进行相应变化位于不同于本实施场景的一个或多个装置中。上述实施场景的模块可以合并为一个模块，也可以进一步拆分成多个子模块。\n\n[0116]上述本发明序号仅仅为了描述，不代表实施场景的优劣。\n\n[0117]以上公开的仅为本发明的几个具体实施场景，但是，本发明并非局限于此，任何本领域的技术人员能思之的变化都应落入本发明的保护范围。\n\n');
INSERT INTO `os_patent_instruction_text` VALUES (11143, 24081, '技术领域\n\n[0001]本发明涉及互联网领域，具体而言，涉及一种签核处理方法及装置。\n\n背景技术\n\n[0002]在企业管理中，通常具有多种文件、单据、行政流程、货物出入库或者其他事项需要相关签核人进行签核。现有技术中，通常直接将收到的用户发送关于签核事项的签核请求发送给签核人，这样容易造成签核请求泛滥，影响正常签核的效率。\n\n发明内容\n\n[0003]有鉴于此，本发明实施例提供了一种签核处理方法及装置，根据发送签核请求的用户的权限判断是否将签核请求发送给签核人，只有在发起签核请求的用户具有发起签核请求的权限时，才将该签核请求发送给签核人，以解决上述问题。\n\n[0004]为了实现上述目的，本发明采用的技术方案如下：\n\n[0005]一种签核处理方法，所述方法包括：接收用户发送的签核请求；根据所述签核请求，判断所述用户是否具有发起该签核请求的权限，若是，将所述签核请求发送给签核人。\n\n[0006]一种签核处理装置，所述装置包括：请求接收模块，用于接收用户发送的签核请求；判断模块，用于根据所述签核请求，判断所述用户是否具有发起该签核请求的权限；发送模块，当所述判断模块判定结果为是，用于将所述签核请求发送给签核人。\n\n[0007]本发明实施例提供的签核处理方法及装置，在接收到用户发送的签核请求后，首先判断该用户是否具有发起该签核请求的权限，当判断结果为是，则将签核请求发送给该签核请求对应的签核人。使在发起签核请求的用户具有发起该签核请求的权限的情况下，该签核请求才能进行，能够进入下一流程。\n\n[0008]为使本发明的上述目的、特征和优点能更明显易懂，下文特举较佳实施例，并配合所附附图，作详细说明如下。\n\n附图说明\n\n[0009]为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0010]图1示出了本发明实施例提供的服务器的结构示意图；\n\n[0011]图2示出了本发明第一实施例提供的签核处理方法的一种流程图；\n\n[0012]图3示出了本发明第一实施例提供的签核处理方法的另一种流程图；\n\n[0013]图4示出了本发明第一实施例提供的签核处理方法的又一种流程图；\n\n[0014]图5示出了本发明第二实施例提供的签核处理装置的功能模块图。\n\n具体实施方式\n\n[0015]下面将结合本发明实施例中附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。通常在此处附图中描述和示出的本发明实施例的组件可以以各种不同的配置来布置和设计。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0016]应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。同时，在本发明的描述中，术语“第一”、“第二”等仅用于区分描述，而不能理解为指示或暗示相对重要性。\n\n[0017]如图1所示，是本申请服务器100的方框示意图。所述服务器100包括签核处理装置200、存储器101、存储控制器102、处理器103、外设接口104及其他。\n\n[0018]所述存储器101、存储控制器102、处理器103、外设接口104各元件相互之间直接或间接地电性连接，以实现数据的传输或交互。例如，这些元件相互之间可通过一条或多条通讯总线或信号线实现电性连接。所述签核处理装置200包括至少一个可以软件或固件(firmware)的形式存储于所述存储器101中或固化在所述服务器100的操作系统(operating system，OS)中的软件功能模块。所述处理器103用于执行存储器101中存储的可执行模块，例如所述签核处理置包括的软件功能模块或计算机程序。\n\n[0019]其中，存储器101可以是，但不限于，随机存取存储器(Random Access Memory，RAM)，只读存储器(Read Only Memory，ROM)，可编程只读存储器(Programmable Read-OnlyMemory，PROM)，可擦除只读存储器(Erasable Programmable Read-Only Memory，EPROM)，电可擦除只读存储器(Electric Erasable Programmable Read-Only Memory，EEPROM)等。其中，存储器101用于存储程序，所述处理器103在接收到执行指令后，执行所述程序，前述本发明实施例任一实施例揭示的流过程定义的服务器100所执行的方法可以应用于处理器103中，或者由处理器103实现。\n\n[0020]处理器103可能是一种集成电路芯片，具有信号的处理能力。上述的处理器103可以是通用处理器，包括中央处理器(Central Processing Unit，简称CPU)、网络处理器(Network Processor，简称NP)等；还可以是数字信号处理器(DSP)、专用集成电路(ASIC)、现成可编程门阵列(FPGA)或者其他可编程逻辑器件、分立门或者晶体管逻辑器件、分立硬件组件。可以实现或者执行本发明实施例中的公开的各方法、步骤及逻辑框图。通用处理器可以是微处理器或者该处理器103也可以是任何常规的处理器等。\n\n[0021]所述外设接口104将各种输入/输出装置耦合至处理器103以及存储器101。在一些实施例中，外设接口104，处理器103以及存储控制器102可以在单个芯片中实现。在其他一些实例中，他们可以分别由独立的芯片实现。\n\n[0022]可以理解的，图1所示的结构仅为示意，服务器100还可以包括比图1中所示更多或更少的组件，或者具有与图1所示不同的配置。图1中所示的各组件可以采用硬件、软件或其组合实现。\n\n[0023]第一实施例\n\n[0024]用户在进行行政审批、物品申购等申请流程中，通过发起签核请求，使相应的负责人能对申请的事项进行签核，以使对应的行政审批、物品申购等申请获得批准。\n\n[0025]本发明实施例提供了一种签核处理方法，根据用户是否具有发起相应签核请求的权限确定签核过程是否能进行。请参见图2，该方法包括：\n\n[0026]步骤S110：接收用户发送的签核请求。\n\n[0027]用户通过用户终端确定需要进行签核的签核事项，并且发起关于该签核事项的签核请求。用户终端将该签核请求发送给服务器100。\n\n[0028]于是，服务器100接收用户通过该用户终端发送的签核请求。\n\n[0029]当然，进一步的，在本实施例中，还可以包括用户登录。在用户登录后，方可发送签核请求。\n\n[0030]具体的，在步骤S110之前，还可以包括：接收用户的登录请求，所述登录请求中包括所述用户的身份标识以及用户输入的登录密码；判断所述身份标识与所述登录密码是否互相匹配，若是，允许用户登录。\n\n[0031]用户在用户终端输入登录帐号以及登录密码。用户终端向服务器100发送登录请求，该登录请求中包括所述用户的身份标识以及用户输入的登录密码，该身份标识可以就是用户输入的登录帐号，也可以是根据登录帐号确定的与该登录帐号相互对应的身份标识。\n\n[0032]服务器100接收到登录请求后，对身份标识与登录密码进行匹配，判断该身份标识对应的登录密码是否是登录请求中的登录密码，若是，则登录请求中的身份标识与登录密码相匹配，允许用户登录，以使用户在成功登录后可以发起签核请求。\n\n[0033]当然，若登录请求中的身份标识与登录密码不匹配，则该用户无法登录该登录帐号，不能以该登录帐号发起签核请求，即不能向服务器100发送签核请求。\n\n[0034]另外，登录请求中也可以是包括登录帐号和登录密码，服务器100接收到登录请求后，根据登录帐号确定与该登录帐号对应的身份标识，再判断身份标识与登录密码的匹配性。\n\n[0035]步骤S120：根据所述签核请求，判断所述用户是否具有发起该签核请求的权限，若是，执行步骤S130。\n\n[0036]服务器100在接收到签核请求后，首先判断发起该签核请求的用户是否具有发起的权限。若判断结果为是，则执行步骤S130。若判断结果为否，则执行步骤S140。\n\n[0037]在一种具体的实施方式中，服务器100接收到的签核请求中包括签核事项以及身份标识，如图3所示，服务器100判断用户是否具有发起该签核请求的权限的方式可以是：\n\n[0038]步骤S121A：根据所述身份标识，查找所述身份标识对应的所有管辖事项。\n\n[0039]在服务器100的存储器101或者相应的数据库中，存储有身份标识以及与身份标识关联存储的身份标识对应的管辖事项。每个用户可以发起其身份标识对应的管辖事项的签核请求。\n\n[0040]服务器100根据签核请求中的身份标识，查找与该身份标识关联存储的管辖事项。\n\n[0041]进一步的，在本实施方式中，可以根据身份标识的级别查找身份标识对应的所有管辖事项。\n\n[0042]具体的，每个身份标识都对应一个级别，每个身份标识与其对应的级别关联存储。并且，在服务器100中，存储每个级别与管辖事项的对应关系，即关联存储级别与级别对应的管辖事项。\n\n[0043]在该实施方式中，服务器100首先根据签核请求中的身份标识查找该身份标识所在级别。再根据查找到的该身份标识的级别查找该级别对应的管辖事项，该身份标识对应的管辖事项即为查找到的该级别对应的管辖事项。\n\n[0044]步骤S122A：判断所述管辖事项中是否包含所述签核事项。\n\n[0045]服务器100判断查找到的所有管辖事项中是否包含有登录请求中所包括的签核事项，即判断签核请求中的签核事项是否属于查找到的签核事项之一。\n\n[0046]具体判断方式可以是，将签核请求中的签核事项与查找到的管辖事项一一匹配，若存在与签核事项相匹配的管辖事项，则可以判定管辖事项中包含所述签核事项，否则，判定管辖事项中不包含所述签核事项。\n\n[0047]步骤S123A：如果所述管辖事项中包含所述签核事项，判定所述用户具有发起该签核请求的权限。\n\n[0048]在判断结果为管辖事项中包含签核事项时，则判定用户具有发起签核请求的权限。\n\n[0049]本实施例还提供了另外一种实施方式，在该实施方式中，所述签核请求仍然包括签核事项以及身份标识。如图4所示，服务器100判断用户是否具有发起该签核请求的权限的方式可以是：\n\n[0050]步骤S121B：根据所述签核事项，查找所述签核事项对应的具有发起该签核事项的权限的所有身份标识。\n\n[0051]具体的，在该实施方式中，可以预先存储所有的签核事项，并且对应每个签核事项关联存储身份标识，对应每个签核事项关联存储的身份标识为该签核事项对应的身份标识，并且为具有发起该签核事项的权限的身份标识。\n\n[0052]服务器100接收到用户发送的签核请求后，查找签核请求中的签核事项关联存储的身份标识，得到签核事项对应的所有身份标识。\n\n[0053]步骤S122B：判断查找到的身份标识中是否包含签核请求中的身份标识，若是，执行步骤S123B。\n\n[0054]步骤S123B：判定所述用户具有发起该签核请求的权限。\n\n[0055]服务器100再判断签核请求中的身份标识是否在查找到的身份标识内，若是，则执行步骤S123B中的判定所述用户具有发起该签核请求的权限。若签核请求中的身份标识不在查找到的身份标识内，则判定用户不具有发起该签核请求的权限。\n\n[0056]具体的，在本实施方式中，判断签核请求中的身份标识是否在查找到的身份标识内的方式可以是，服务器100可以将签核请求中的身份标识与查找到的身份标识一一匹配，当查找到的身份标识中存在可以与签核请求中的身份标识相匹配的身份标识时，则判断结果为查找到的身份标识中包含签核请求中的身份标识。\n\n[0057]步骤S130：将所述签核请求发送给签核人。\n\n[0058]在发送签核请求的用户具有发起签核请求的权限时，服务器100将该签核请求发送给相应的签核人，以使签核人能接收到该签核请求并对其进行相应的签核。\n\n[0059]在本实施例中，签核请求的相应的签核人可以是包括在签核请求中，在发送签核请求时由用户发送。也可以是预先存储每个签核事项对应的签核人，服务器100根据签核请求中的签核事项查找该签核事项对应的签核人。\n\n[0060]步骤S140：向所述用户作出相应提示。\n\n[0061]在发送签核请求的用户不具有发起该签核请求的权限时，服务器100向用户做出相应的提示，以使用户获知其无发起该签核请求的权限。同时，服务器100不对该签核请求进行处理，不发送给签核人。\n\n[0062]第二实施例\n\n[0063]本实施例提供了一种签核处理装置200，如图5所示，该装置200包括：请求接收模块210，用于接收用户发送的签核请求。判断模块220，用于根据所述签核请求，判断所述用户是否具有发起该签核请求的权限。发送模块230，当所述判断模块220判定结果为是，用于将所述签核请求发送给签核人。\n\n[0064]在本实施例提供的一种具体的实施方式中，所述签核请求包括签核事项以及身份标识，所述判断模块220可以包括：事项查找单元，用于根据所述身份标识，查找所述身份标识对应的所有管辖事项；第一判断单元，用于判断所述管辖事项中是否包含所述签核事项；第一判定单元，用于当所述管辖事项中包含所述签核事项，判定所述用户具有发起该签核请求的权限。\n\n[0065]进一步的，在本实施方式中，事项查找单元包括：第一查找子单元，用于根据所述身份标识，查找所述身份标识所属的级别；第二查找子单元，用于查找所述身份标识所属的级别对应的管辖事项，查找到的管辖事项为所述身份标识对应的管辖事项。\n\n[0066]在本实施例提供的另一种具体的实施方式中，所述签核请求包括签核事项以及身份标识，所述判断模块220包括：身份标识查找单元，用于根据所述签核事项，查找所述签核事项对应的具有发起该签核事项的权限的所有身份标识；第二判断单元，用于判断查找到的身份标识中是否包含签核请求中的身份标识；第二判定单元，当所述判断单元判断结果为是，用于判定所述用户具有发起该签核请求的权限。\n\n[0067]在本实施例中，当所述判断模块220判定结果为是，发送模块230还用于向所述用户作出相应提示。\n\n[0068]进一步的，在本实施例中，在用户登录后允许用户发送签核请求，还包括登录模块，用于接收用户的登录请求，所述登录请求中包括所述用户的身份标识以及用户输入的登录密码；判断所述身份标识与所述登录密码是否互相匹配，若是，允许用户登录。\n\n[0069]综上所述，本发明实施例提供的签核处理方法及装置，在接收到用户发送的签核请求后，先判断用户是否具有发起该签核请求的权限，若是，再将签核请求发送给签核人。否则，不对该签核请求进行处理，不将其发送到签核人。\n\n[0070]在本申请所提供的几个实施例中，应该理解到，所揭露的装置和方法，也可以通过其它的方式实现。以上所描述的装置实施例仅仅是示意性的，例如，附图中的流程图和框图显示了根据本发明的多个实施例的装置、方法和计算机程序产品的可能实现的体系架构、功能和操作。在这点上，流程图或框图中的每个方框可以代表一个模块、程序段或代码的一部分，所述模块、程序段或代码的一部分包含一个或多个用于实现规定的逻辑功能的可执行指令。也应当注意，在有些作为替换的实现方式中，方框中所标注的功能也可以以不同于附图中所标注的顺序发生。例如，两个连续的方框实际上可以基本并行地执行，它们有时也可以按相反的顺序执行，这依所涉及的功能而定。也要注意的是，框图和/或流程图中的每个方框、以及框图和/或流程图中的方框的组合，可以用执行规定的功能或动作的专用的基于硬件的系统来实现，或者可以用专用硬件与计算机指令的组合来实现。\n\n[0071]另外，在本发明各个实施例中的各功能模块可以集成在一起形成一个独立的部分，也可以是各个模块单独存在，也可以两个或两个以上模块集成形成一个独立的部分。\n\n[0072]所述功能如果以软件功能模块的形式实现并作为独立的产品销售或使用时，可以存储在一个计算机可读取存储介质中。基于这样的理解，本发明的技术方案本质上或者说对现有技术做出贡献的部分或者该技术方案的部分可以以软件产品的形式体现出来，该计算机软件产品存储在一个存储介质中，包括若干指令用以使得一台计算机设备(可以是个人计算机，服务器，或者网络设备等)执行本发明各个实施例所述方法的全部或部分步骤。而前述的存储介质包括：U盘、移动硬盘、只读存储器(ROM，Read-Only Memory)、随机存取存储器(RAM，Random Access Memory)、磁碟或者光盘等各种可以存储程序代码的介质。需要说明的是，在本文中，诸如第一和第二、另一等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。\n\n[0073]以上所述仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。\n\n[0074]以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应所述以权利要求的保护范围为准。\n\n', '技术领域\n\n[0001]本发明涉及互联网领域，具体而言，涉及一种签核处理方法及装置。\n\n背景技术\n\n[0002]在企业管理中，通常具有多种文件、单据、行政流程、货物出入库或者其他事项需要相关签核人进行签核。现有技术中，通常直接将收到的用户发送关于签核事项的签核请求发送给签核人，这样容易造成签核请求泛滥，影响正常签核的效率。\n\n发明内容\n\n[0003]有鉴于此，本发明实施例提供了一种签核处理方法及装置，根据发送签核请求的用户的权限判断是否将签核请求发送给签核人，只有在发起签核请求的用户具有发起签核请求的权限时，才将该签核请求发送给签核人，以解决上述问题。\n\n[0004]为了实现上述目的，本发明采用的技术方案如下：\n\n[0005]一种签核处理方法，所述方法包括：接收用户发送的签核请求；根据所述签核请求，判断所述用户是否具有发起该签核请求的权限，若是，将所述签核请求发送给签核人。\n\n[0006]一种签核处理装置，所述装置包括：请求接收模块，用于接收用户发送的签核请求；判断模块，用于根据所述签核请求，判断所述用户是否具有发起该签核请求的权限；发送模块，当所述判断模块判定结果为是，用于将所述签核请求发送给签核人。\n\n[0007]本发明实施例提供的签核处理方法及装置，在接收到用户发送的签核请求后，首先判断该用户是否具有发起该签核请求的权限，当判断结果为是，则将签核请求发送给该签核请求对应的签核人。使在发起签核请求的用户具有发起该签核请求的权限的情况下，该签核请求才能进行，能够进入下一流程。\n\n[0008]为使本发明的上述目的、特征和优点能更明显易懂，下文特举较佳实施例，并配合所附附图，作详细说明如下。\n\n附图说明\n\n[0009]为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0010]图1示出了本发明实施例提供的服务器的结构示意图；\n\n[0011]图2示出了本发明第一实施例提供的签核处理方法的一种流程图；\n\n[0012]图3示出了本发明第一实施例提供的签核处理方法的另一种流程图；\n\n[0013]图4示出了本发明第一实施例提供的签核处理方法的又一种流程图；\n\n[0014]图5示出了本发明第二实施例提供的签核处理装置的功能模块图。\n\n具体实施方式\n\n[0015]下面将结合本发明实施例中附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。通常在此处附图中描述和示出的本发明实施例的组件可以以各种不同的配置来布置和设计。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0016]应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。同时，在本发明的描述中，术语“第一”、“第二”等仅用于区分描述，而不能理解为指示或暗示相对重要性。\n\n[0017]如图1所示，是本申请服务器100的方框示意图。所述服务器100包括签核处理装置200、存储器101、存储控制器102、处理器103、外设接口104及其他。\n\n[0018]所述存储器101、存储控制器102、处理器103、外设接口104各元件相互之间直接或间接地电性连接，以实现数据的传输或交互。例如，这些元件相互之间可通过一条或多条通讯总线或信号线实现电性连接。所述签核处理装置200包括至少一个可以软件或固件(firmware)的形式存储于所述存储器101中或固化在所述服务器100的操作系统(operating system，OS)中的软件功能模块。所述处理器103用于执行存储器101中存储的可执行模块，例如所述签核处理置包括的软件功能模块或计算机程序。\n\n[0019]其中，存储器101可以是，但不限于，随机存取存储器(Random Access Memory，RAM)，只读存储器(Read Only Memory，ROM)，可编程只读存储器(Programmable Read-OnlyMemory，PROM)，可擦除只读存储器(Erasable Programmable Read-Only Memory，EPROM)，电可擦除只读存储器(Electric Erasable Programmable Read-Only Memory，EEPROM)等。其中，存储器101用于存储程序，所述处理器103在接收到执行指令后，执行所述程序，前述本发明实施例任一实施例揭示的流过程定义的服务器100所执行的方法可以应用于处理器103中，或者由处理器103实现。\n\n[0020]处理器103可能是一种集成电路芯片，具有信号的处理能力。上述的处理器103可以是通用处理器，包括中央处理器(Central Processing Unit，简称CPU)、网络处理器(Network Processor，简称NP)等；还可以是数字信号处理器(DSP)、专用集成电路(ASIC)、现成可编程门阵列(FPGA)或者其他可编程逻辑器件、分立门或者晶体管逻辑器件、分立硬件组件。可以实现或者执行本发明实施例中的公开的各方法、步骤及逻辑框图。通用处理器可以是微处理器或者该处理器103也可以是任何常规的处理器等。\n\n[0021]所述外设接口104将各种输入/输出装置耦合至处理器103以及存储器101。在一些实施例中，外设接口104，处理器103以及存储控制器102可以在单个芯片中实现。在其他一些实例中，他们可以分别由独立的芯片实现。\n\n[0022]可以理解的，图1所示的结构仅为示意，服务器100还可以包括比图1中所示更多或更少的组件，或者具有与图1所示不同的配置。图1中所示的各组件可以采用硬件、软件或其组合实现。\n\n[0023]第一实施例\n\n[0024]用户在进行行政审批、物品申购等申请流程中，通过发起签核请求，使相应的负责人能对申请的事项进行签核，以使对应的行政审批、物品申购等申请获得批准。\n\n[0025]本发明实施例提供了一种签核处理方法，根据用户是否具有发起相应签核请求的权限确定签核过程是否能进行。请参见图2，该方法包括：\n\n[0026]步骤S110：接收用户发送的签核请求。\n\n[0027]用户通过用户终端确定需要进行签核的签核事项，并且发起关于该签核事项的签核请求。用户终端将该签核请求发送给服务器100。\n\n[0028]于是，服务器100接收用户通过该用户终端发送的签核请求。\n\n[0029]当然，进一步的，在本实施例中，还可以包括用户登录。在用户登录后，方可发送签核请求。\n\n[0030]具体的，在步骤S110之前，还可以包括：接收用户的登录请求，所述登录请求中包括所述用户的身份标识以及用户输入的登录密码；判断所述身份标识与所述登录密码是否互相匹配，若是，允许用户登录。\n\n[0031]用户在用户终端输入登录帐号以及登录密码。用户终端向服务器100发送登录请求，该登录请求中包括所述用户的身份标识以及用户输入的登录密码，该身份标识可以就是用户输入的登录帐号，也可以是根据登录帐号确定的与该登录帐号相互对应的身份标识。\n\n[0032]服务器100接收到登录请求后，对身份标识与登录密码进行匹配，判断该身份标识对应的登录密码是否是登录请求中的登录密码，若是，则登录请求中的身份标识与登录密码相匹配，允许用户登录，以使用户在成功登录后可以发起签核请求。\n\n[0033]当然，若登录请求中的身份标识与登录密码不匹配，则该用户无法登录该登录帐号，不能以该登录帐号发起签核请求，即不能向服务器100发送签核请求。\n\n[0034]另外，登录请求中也可以是包括登录帐号和登录密码，服务器100接收到登录请求后，根据登录帐号确定与该登录帐号对应的身份标识，再判断身份标识与登录密码的匹配性。\n\n[0035]步骤S120：根据所述签核请求，判断所述用户是否具有发起该签核请求的权限，若是，执行步骤S130。\n\n[0036]服务器100在接收到签核请求后，首先判断发起该签核请求的用户是否具有发起的权限。若判断结果为是，则执行步骤S130。若判断结果为否，则执行步骤S140。\n\n[0037]在一种具体的实施方式中，服务器100接收到的签核请求中包括签核事项以及身份标识，如图3所示，服务器100判断用户是否具有发起该签核请求的权限的方式可以是：\n\n[0038]步骤S121A：根据所述身份标识，查找所述身份标识对应的所有管辖事项。\n\n[0039]在服务器100的存储器101或者相应的数据库中，存储有身份标识以及与身份标识关联存储的身份标识对应的管辖事项。每个用户可以发起其身份标识对应的管辖事项的签核请求。\n\n[0040]服务器100根据签核请求中的身份标识，查找与该身份标识关联存储的管辖事项。\n\n[0041]进一步的，在本实施方式中，可以根据身份标识的级别查找身份标识对应的所有管辖事项。\n\n[0042]具体的，每个身份标识都对应一个级别，每个身份标识与其对应的级别关联存储。并且，在服务器100中，存储每个级别与管辖事项的对应关系，即关联存储级别与级别对应的管辖事项。\n\n[0043]在该实施方式中，服务器100首先根据签核请求中的身份标识查找该身份标识所在级别。再根据查找到的该身份标识的级别查找该级别对应的管辖事项，该身份标识对应的管辖事项即为查找到的该级别对应的管辖事项。\n\n[0044]步骤S122A：判断所述管辖事项中是否包含所述签核事项。\n\n[0045]服务器100判断查找到的所有管辖事项中是否包含有登录请求中所包括的签核事项，即判断签核请求中的签核事项是否属于查找到的签核事项之一。\n\n[0046]具体判断方式可以是，将签核请求中的签核事项与查找到的管辖事项一一匹配，若存在与签核事项相匹配的管辖事项，则可以判定管辖事项中包含所述签核事项，否则，判定管辖事项中不包含所述签核事项。\n\n[0047]步骤S123A：如果所述管辖事项中包含所述签核事项，判定所述用户具有发起该签核请求的权限。\n\n[0048]在判断结果为管辖事项中包含签核事项时，则判定用户具有发起签核请求的权限。\n\n[0049]本实施例还提供了另外一种实施方式，在该实施方式中，所述签核请求仍然包括签核事项以及身份标识。如图4所示，服务器100判断用户是否具有发起该签核请求的权限的方式可以是：\n\n[0050]步骤S121B：根据所述签核事项，查找所述签核事项对应的具有发起该签核事项的权限的所有身份标识。\n\n[0051]具体的，在该实施方式中，可以预先存储所有的签核事项，并且对应每个签核事项关联存储身份标识，对应每个签核事项关联存储的身份标识为该签核事项对应的身份标识，并且为具有发起该签核事项的权限的身份标识。\n\n[0052]服务器100接收到用户发送的签核请求后，查找签核请求中的签核事项关联存储的身份标识，得到签核事项对应的所有身份标识。\n\n[0053]步骤S122B：判断查找到的身份标识中是否包含签核请求中的身份标识，若是，执行步骤S123B。\n\n[0054]步骤S123B：判定所述用户具有发起该签核请求的权限。\n\n[0055]服务器100再判断签核请求中的身份标识是否在查找到的身份标识内，若是，则执行步骤S123B中的判定所述用户具有发起该签核请求的权限。若签核请求中的身份标识不在查找到的身份标识内，则判定用户不具有发起该签核请求的权限。\n\n[0056]具体的，在本实施方式中，判断签核请求中的身份标识是否在查找到的身份标识内的方式可以是，服务器100可以将签核请求中的身份标识与查找到的身份标识一一匹配，当查找到的身份标识中存在可以与签核请求中的身份标识相匹配的身份标识时，则判断结果为查找到的身份标识中包含签核请求中的身份标识。\n\n[0057]步骤S130：将所述签核请求发送给签核人。\n\n[0058]在发送签核请求的用户具有发起签核请求的权限时，服务器100将该签核请求发送给相应的签核人，以使签核人能接收到该签核请求并对其进行相应的签核。\n\n[0059]在本实施例中，签核请求的相应的签核人可以是包括在签核请求中，在发送签核请求时由用户发送。也可以是预先存储每个签核事项对应的签核人，服务器100根据签核请求中的签核事项查找该签核事项对应的签核人。\n\n[0060]步骤S140：向所述用户作出相应提示。\n\n[0061]在发送签核请求的用户不具有发起该签核请求的权限时，服务器100向用户做出相应的提示，以使用户获知其无发起该签核请求的权限。同时，服务器100不对该签核请求进行处理，不发送给签核人。\n\n[0062]第二实施例\n\n[0063]本实施例提供了一种签核处理装置200，如图5所示，该装置200包括：请求接收模块210，用于接收用户发送的签核请求。判断模块220，用于根据所述签核请求，判断所述用户是否具有发起该签核请求的权限。发送模块230，当所述判断模块220判定结果为是，用于将所述签核请求发送给签核人。\n\n[0064]在本实施例提供的一种具体的实施方式中，所述签核请求包括签核事项以及身份标识，所述判断模块220可以包括：事项查找单元，用于根据所述身份标识，查找所述身份标识对应的所有管辖事项；第一判断单元，用于判断所述管辖事项中是否包含所述签核事项；第一判定单元，用于当所述管辖事项中包含所述签核事项，判定所述用户具有发起该签核请求的权限。\n\n[0065]进一步的，在本实施方式中，事项查找单元包括：第一查找子单元，用于根据所述身份标识，查找所述身份标识所属的级别；第二查找子单元，用于查找所述身份标识所属的级别对应的管辖事项，查找到的管辖事项为所述身份标识对应的管辖事项。\n\n[0066]在本实施例提供的另一种具体的实施方式中，所述签核请求包括签核事项以及身份标识，所述判断模块220包括：身份标识查找单元，用于根据所述签核事项，查找所述签核事项对应的具有发起该签核事项的权限的所有身份标识；第二判断单元，用于判断查找到的身份标识中是否包含签核请求中的身份标识；第二判定单元，当所述判断单元判断结果为是，用于判定所述用户具有发起该签核请求的权限。\n\n[0067]在本实施例中，当所述判断模块220判定结果为是，发送模块230还用于向所述用户作出相应提示。\n\n[0068]进一步的，在本实施例中，在用户登录后允许用户发送签核请求，还包括登录模块，用于接收用户的登录请求，所述登录请求中包括所述用户的身份标识以及用户输入的登录密码；判断所述身份标识与所述登录密码是否互相匹配，若是，允许用户登录。\n\n[0069]综上所述，本发明实施例提供的签核处理方法及装置，在接收到用户发送的签核请求后，先判断用户是否具有发起该签核请求的权限，若是，再将签核请求发送给签核人。否则，不对该签核请求进行处理，不将其发送到签核人。\n\n[0070]在本申请所提供的几个实施例中，应该理解到，所揭露的装置和方法，也可以通过其它的方式实现。以上所描述的装置实施例仅仅是示意性的，例如，附图中的流程图和框图显示了根据本发明的多个实施例的装置、方法和计算机程序产品的可能实现的体系架构、功能和操作。在这点上，流程图或框图中的每个方框可以代表一个模块、程序段或代码的一部分，所述模块、程序段或代码的一部分包含一个或多个用于实现规定的逻辑功能的可执行指令。也应当注意，在有些作为替换的实现方式中，方框中所标注的功能也可以以不同于附图中所标注的顺序发生。例如，两个连续的方框实际上可以基本并行地执行，它们有时也可以按相反的顺序执行，这依所涉及的功能而定。也要注意的是，框图和/或流程图中的每个方框、以及框图和/或流程图中的方框的组合，可以用执行规定的功能或动作的专用的基于硬件的系统来实现，或者可以用专用硬件与计算机指令的组合来实现。\n\n[0071]另外，在本发明各个实施例中的各功能模块可以集成在一起形成一个独立的部分，也可以是各个模块单独存在，也可以两个或两个以上模块集成形成一个独立的部分。\n\n[0072]所述功能如果以软件功能模块的形式实现并作为独立的产品销售或使用时，可以存储在一个计算机可读取存储介质中。基于这样的理解，本发明的技术方案本质上或者说对现有技术做出贡献的部分或者该技术方案的部分可以以软件产品的形式体现出来，该计算机软件产品存储在一个存储介质中，包括若干指令用以使得一台计算机设备(可以是个人计算机，服务器，或者网络设备等)执行本发明各个实施例所述方法的全部或部分步骤。而前述的存储介质包括：U盘、移动硬盘、只读存储器(ROM，Read-Only Memory)、随机存取存储器(RAM，Random Access Memory)、磁碟或者光盘等各种可以存储程序代码的介质。需要说明的是，在本文中，诸如第一和第二、另一等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。\n\n[0073]以上所述仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。\n\n[0074]以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应所述以权利要求的保护范围为准。\n\n');
INSERT INTO `os_patent_instruction_text` VALUES (11144, 24082, '技术领域\n\n[0001]本发明涉及互联网领域，具体而言，涉及一种签核请求处理方法及装置。\n\n背景技术\n\n[0002]在企业管理中，通常具有多种文件、单据、行政流程、货物出入库或者其他事项需要相关签核人进行签核。现有技术中，发起签核的用户通常可以直接对签核人进行选择，这样容易造成签核人选择随意，在签核人选择不正确的情况下，影响正常签核的效率。\n\n发明内容\n\n[0003]有鉴于此，本发明实施例提供了一种签核请求处理方法及装置，在接收到用户的签核请求后，对相应用户的签核人选择权限进行判断，只有当签核请求中签核人在用户的签核人选择权限中，才允许用户选择该签核人，以使签核人选择正确，改善上述问题。\n\n[0004]为了实现上述目的，本发明采用的技术方案如下：\n\n[0005]一种签核请求处理方法，所述方法包括：接收用户发送的签核请求，所述签核请求中包括所要选择的签核人；根据所述签核请求，判断所述用户的签核人选择权限；若所要选择的签核人为所述签核人选择权限范围内的签核人，允许用户选择所述签核请求中的签核人。\n\n[0006]一种签核请求处理装置，所述装置包括：接收模块，用于接收用户发送的签核请求，所述签核请求中包括所要选择的签核人；判断模块，用于根据所述签核请求，判断所述用户的签核人选择权限；应答模块，若所要选择的签核人为所述签核人选择权限范围内的签核人，用于允许用户选择所述签核请求中的签核人。\n\n[0007]本发明实施例提供的签核请求处理方法及装置，在接收到用户发送的签核请求后，判断该签核请求中的签核人是否在该用户的签核人选择权限范围内。若判断结果为是，则说明用户具有选择该签核人的权限，允许用户选择该签核人，以使该签核请求由该选择的签核人签核。避免因签核人选择错误影响该签核请求的签核效率。\n\n[0008]为使本发明的上述目的、特征和优点能更明显易懂，下文特举较佳实施例，并配合所附附图，作详细说明如下。\n\n附图说明\n\n[0009]为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0010]图1示出了本发明实施例提供的服务器的结构示意图；\n\n[0011]图2示出了本发明第一实施例提供的签核请求处理方法的一种流程图；\n\n[0012]图3示出了本发明第一实施例提供的签核请求处理方法的另一种流程图；\n\n[0013]图4示出了本发明第一实施例提供的签核请求处理方法的又一种流程图；\n\n[0014]图5示出了本发明第一实施例提供的签核请求处理方法的还一种流程图；\n\n[0015]图6示出了本发明第二实施例提供的签核请求处理装置的功能模块图。\n\n具体实施方式\n\n[0016]下面将结合本发明实施例中附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。通常在此处附图中描述和示出的本发明实施例的组件可以以各种不同的配置来布置和设计。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0017]应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。同时，在本发明的描述中，术语“第一”、“第二”等仅用于区分描述，而不能理解为指示或暗示相对重要性。\n\n[0018]如图1所示，是本申请服务器100的方框示意图。所述服务器100包括签核请求处理装置200、存储器101、存储控制器102、处理器103、外设接口104及其他。\n\n[0019]所述存储器101、存储控制器102、处理器103、外设接口104各元件相互之间直接或间接地电性连接，以实现数据的传输或交互。例如，这些元件相互之间可通过一条或多条通讯总线或信号线实现电性连接。所述签核请求处理装置200包括至少一个可以软件或固件(firmware)的形式存储于所述存储器101中或固化在所述服务器100的操作系统(operating system，OS)中的软件功能模块。所述处理器103用于执行存储器101中存储的可执行模块，例如所述签核请求处理装置200包括的软件功能模块或计算机程序。\n\n[0020]其中，存储器101可以是，但不限于，随机存取存储器(Random Access Memory，RAM)，只读存储器(Read Only Memory，ROM)，可编程只读存储器(Programmable Read-OnlyMemory，PROM)，可擦除只读存储器(Erasable Programmable Read-Only Memory，EPROM)，电可擦除只读存储器(Electric Erasable Programmable Read-Only Memory，EEPROM)等。其中，存储器101用于存储程序，所述处理器103在接收到执行指令后，执行所述程序，前述本发明实施例任一实施例揭示的流过程定义的服务器100所执行的方法可以应用于处理器103中，或者由处理器103实现。\n\n[0021]处理器103可能是一种集成电路芯片，具有信号的处理能力。上述的处理器103可以是通用处理器，包括中央处理器(Central Processing Unit，简称CPU)、网络处理器(Network Processor，简称NP)等；还可以是数字信号处理器(DSP)、专用集成电路(ASIC)、现成可编程门阵列(FPGA)或者其他可编程逻辑器件、分立门或者晶体管逻辑器件、分立硬件组件。可以实现或者执行本发明实施例中的公开的各方法、步骤及逻辑框图。通用处理器可以是微处理器或者该处理器103也可以是任何常规的处理器等。\n\n[0022]所述外设接口104将各种输入/输出装置耦合至处理器103以及存储器101。在一些实施例中，外设接口104，处理器103以及存储控制器102可以在单个芯片中实现。在其他一些实例中，他们可以分别由独立的芯片实现。\n\n[0023]可以理解的，图1所示的结构仅为示意，服务器100还可以包括比图1中所示更多或更少的组件，或者具有与图1所示不同的配置。图1中所示的各组件可以采用硬件、软件或其组合实现。\n\n[0024]用户在进行行政审批、物品申购等申请流程中，通过发起签核请求，使相应的负责人能对申请的事项进行签核，以使对应的行政审批、物品申购等申请获得批准。\n\n[0025]第一实施例\n\n[0026]本发明实施例提供了一种签核请求处理方法，根据用户的签核人选择权限确定是否允许用户选择其选择的签核人。具体的，请参见图2，该方法包括：\n\n[0027]步骤S110：接收用户发送的签核请求，所述签核请求中包括所要选择的签核人。\n\n[0028]用户通过用户终端发起签核请求，并且确定需要其对该签核请求进行签核的签核人，则该签核请求中包括用户所要选择的签核人，可以理解的，签核请求中包括的所要选择的签核人为所要选择的签核人的相关身份信息。用户终端接收到用户发起的签核请求，将该签核请求发送给服务器100。\n\n[0029]于是，服务器100接收用户通过该用户终端发送的签核请求，。\n\n[0030]当然，进一步的，在本实施例中，还可以包括用户登录。在完成用户登录后，服务器100才接收用户发送的签核请求，使该用户在登录后方可发送签核请求。\n\n[0031]具体的，在步骤S110之前，还可以包括：接收用户的登录请求，所述登录请求中包括所述用户的第一身份标识以及用户输入的登录密码；判断所述第一身份标识与所述登录密码是否互相匹配，若是，允许用户登录。\n\n[0032]用户在用户终端输入登录帐号以及登录密码并触发登录请求。用户终端向服务器100发送登录请求，该登录请求中包括用户输入的登录密码以及表示用户唯一身份信息的第一身份标识。在本实施例中，该第一身份标识可以就是用户输入的登录帐号，也可以是根据登录帐号确定的与该登录帐号相互对应的第一身份标识。\n\n[0033]服务器100接收到登录请求后，对第一身份标识与登录密码进行匹配，判断该第一身份标识对应的登录密码是否是登录请求中的登录密码，若是，则登录请求中的第一身份标识与登录密码相匹配，允许用户登录，以使用户在成功登录后可以发起签核请求。\n\n[0034]当然，若登录请求中的第一身份标识与登录密码不匹配，则该用户无法登录该登录帐号，不能以该登录帐号发起签核请求，即不能向服务器100发送签核请求。\n\n[0035]另外，登录请求中也可以是包括登录帐号和登录密码，服务器100接收到登录请求后，根据登录帐号确定与该登录帐号对应的身份标识，再判断身份标识与登录密码的匹配性。\n\n[0036]步骤S120：根据所述签核请求，判断所述用户的签核人选择权限。\n\n[0037]服务器100接收到的签核请求，根据签核请求中的信息，判断发起该签核请求的用户的签核人选择权限。\n\n[0038]在本实施例提供的一种具体的实施方式中，如图3所示，签核请求中还包括所述用户的第一身份标识，该步骤120可以包括：\n\n[0039]步骤S121A：根据所述第一身份标识，查找所述第一身份标识对应的签核人。\n\n[0040]在服务器100的存储器101或者相应的数据库中，存储有第一身份标识以及与第一身份标识关联存储的该第一身份标识对应的签核人。第一身份标识对应的签核人为该第一身份标识对应的用户可以选择的签核人，并且，第一身份标识对应的签核人的数量由实际需求确定。\n\n[0041]服务器100接收到签核请求后，根据签核请求中的第一身份标识，查找与该第一身份标识关联存储的签核人。\n\n[0042]步骤S122A：判定查找到的所有签核人为所述签核人选择权限范围内的签核人。\n\n[0043]服务器100将根据第一身份标识查找到的所有签核人判定为发起签核请求的用户的签核人选择权限范围内的签核人。\n\n[0044]本实施例还提供了另一种实施方式。在该实施方式中，签核请求中包括所要选择的签核人的第二身份标识，即签核请求中包括的所要选择的签核人的身份信息为该签核人的第二身份标识，该第二身份标识可以唯一表示一个签核人。\n\n[0045]请参见图4，在本实施方式中，步骤S120的根据所述签核请求，判断所述用户的签核人选择权限可以包括：\n\n[0046]步骤S121B：根据所述签核人的第二身份标识，查找与所述第二身份标识对应的签核发起人。\n\n[0047]在服务器100的存储器101或者相应的数据库中，存储有第二身份标识以及与第二身份标识关联存储的该第二身份标识对应的签核发起人。第二身份标识对应的签核发起人为，可以选择该第二身份标识对应的签核人作为签核人的用户。并且，第二身份标识对应的签核发起人的数量由实际需求确定。\n\n[0048]服务器100接收到签核请求后，根据签核请求中的第二身份标识，可以查找到与第二身份标识对应的签核发起人。\n\n[0049]步骤S122B：若所述用户在查找到的所述签核发起人范围内，判定用户选择的签核人为所述签核人选择权限范围内的签核人。\n\n[0050]判断发起该签核请求的用户是否在查找到的签核发起人范围内。具体的判断方式可以是，将发起签核请求的用户的第一身份标识与查找到的所有签核发起人的身份标识进行匹配。若在查找到的签核发起人中存在与第一身份标识匹配的身份标识，则判定用户选择的签核人为所述签核人选择权限范围内的签核人。当然，若在查找到的签核发起人中不存在与第一身份标识匹配的身份标识，则判定用户选择的签核人不为所述签核人选择权限范围内的签核人。\n\n[0051]本实施例还提供了一种实施方式，在该实施方式中，签核请求中包括发起该签核请求的所述用户的级别以及所要选择的签核人的级别。如图5所示，该实施方式中对签核人选择权限的判断可以具体包括：\n\n[0052]步骤S121C：比较所述用户的级别以及所述签核人的级别。\n\n[0053]步骤S122C：若所述用户的级别与所述签核人的级别差值小于预设阈值，判定用户选择的签核人为所述签核人选择权限范围内的签核人。\n\n[0054]服务器100对用户的级别以及所要选择的签核人的级别进行比较。在该实施方式中，对每一个级别可以有一个量化值，如第一级别的量化值为1，第二级别的量化值为2等。对级别的比较可以通过不同级别的量化值的比较。当然，对两个级别的比较也可以是其他方式，在本实施例中并不做限定。\n\n[0055]若比较结果为用户的级别与所要选择的签核人的级别之间的差值小于预设阈值，则该签核人为发起签核请求的用户可以选择的签核人，判定用户选择的签核人为所述签核人选择权限范围内的签核人。\n\n[0056]当然，若比较结果为用户的级别与所要选择的签核人的级别之间的差值大于或等于预设阈值，该用户不具有选择该签核人的权限，即用户选择的签核人不为所述签核人选择权限范围内的签核人。\n\n[0057]步骤S130：若所要选择的签核人为所述签核人选择权限范围内的签核人，允许用户选择所述签核请求中的签核人。\n\n[0058]若签核请求中包括的用户所要选择的签核人在用户的签核人选择权限范围内，则表明该用户可以选择该签核人，此时，允许用户选择该签核请求中的签核人，即用户可以成功选择该所要选择的签核人作为其发送的签核请求的签核人。\n\n[0059]进一步的，在本实施例中，若用户所要选择的签核人不在所述签核人选择权限范围内，则拒绝所述用户选择所述签核请求中的签核人，即用户不能成功选择不在签核人选择权限范围内的作为签核人。\n\n[0060]第二实施例\n\n[0061]本实施例提供了一种签核请求处理装置200，如图6所示，所述装置包括：接收模块210，用于接收用户发送的签核请求，所述签核请求中包括所要选择的签核人；判断模块220，用于根据所述签核请求，判断所述用户的签核人选择权限；应答模块230，若所要选择的签核人为所述签核人选择权限范围内的签核人，用于允许用户选择所述签核请求中的签核人。\n\n[0062]进一步的，在本实施例的一种具体实施方式中，所述签核请求中还可以包括所述用户的第一身份标识，所述判断模块220包括：查找单元，用于根据所述第一身份标识，查找所述第一身份标识对应的签核人；判定单元，用于判定查找到的所有签核人为所述签核人选择权限范围内的签核人。\n\n[0063]另外，本实施例的另一种实施方式中，所述签核请求中包括所要选择的签核人的第二身份标识，所述判断模块220包括：查找单元，用于根据所述签核人的第二身份标识，查找与所述第二身份标识对应的签核发起人；判定单元，若所述用户在查找到的所述签核发起人范围内，用于判定用户选择的签核人为所述签核人选择权限范围内的签核人。\n\n[0064]本实施例还提供了一种实施方式，在该实施方式中，所述签核请求中包括所述用户的级别以及所要选择的签核人的级别，所述判断模块220包括：比较单元，用于比较所述用户的级别以及所述签核人的级别；判定单元，若所述用户的级别与所述签核人的级别差值小于预设阈值，用于判定用户选择的签核人为所述签核人选择权限范围内的签核人。\n\n[0065]进一步的，在本实施例中，若所要选择的签核人不在所述签核人选择权限范围内，应答模块230可以用于拒绝所述用户选择所述签核请求中的签核人。\n\n[0066]进一步的，本实施例提供的签核请求处理装置200可以在用户登录后才接收用户发送签核请求。于是，该装置200还可以包括登录模块，用于接收用户的登录请求，所述登录请求中包括所述用户的第一身份标识以及用户输入的登录密码；用于判断所述第一身份标识与所述登录密码是否互相匹配，以及当在第一身份标识与登录密码相匹配的情况下，允许用户登录。\n\n[0067]综上所述，本发明实施例提供的签核请求处理方法及装置，在接收到包括要选择的签核人的签核请求后，首先判断发送该签核请求的用户的签核人选择权限，若用户所要选择的签核人在该签核人选择权限范围内，则允许用户选择该签核人作为对该签核请求进行签核的签核人。使用户选择的签核人为签核人选择权限范围内的签核人，以避免用户选择签核人不正确造成签核流程不能顺利进行，影响签核效率，同时，也可以避免影响错误选择的签核人的工作。\n\n[0068]在本申请所提供的几个实施例中，应该理解到，所揭露的装置和方法，也可以通过其它的方式实现。以上所描述的装置实施例仅仅是示意性的，例如，附图中的流程图和框图显示了根据本发明的多个实施例的装置、方法和计算机程序产品的可能实现的体系架构、功能和操作。在这点上，流程图或框图中的每个方框可以代表一个模块、程序段或代码的一部分，所述模块、程序段或代码的一部分包含一个或多个用于实现规定的逻辑功能的可执行指令。也应当注意，在有些作为替换的实现方式中，方框中所标注的功能也可以以不同于附图中所标注的顺序发生。例如，两个连续的方框实际上可以基本并行地执行，它们有时也可以按相反的顺序执行，这依所涉及的功能而定。也要注意的是，框图和/或流程图中的每个方框、以及框图和/或流程图中的方框的组合，可以用执行规定的功能或动作的专用的基于硬件的系统来实现，或者可以用专用硬件与计算机指令的组合来实现。\n\n[0069]另外，在本发明各个实施例中的各功能模块可以集成在一起形成一个独立的部分，也可以是各个模块单独存在，也可以两个或两个以上模块集成形成一个独立的部分。\n\n[0070]所述功能如果以软件功能模块的形式实现并作为独立的产品销售或使用时，可以存储在一个计算机可读取存储介质中。基于这样的理解，本发明的技术方案本质上或者说对现有技术做出贡献的部分或者该技术方案的部分可以以软件产品的形式体现出来，该计算机软件产品存储在一个存储介质中，包括若干指令用以使得一台计算机设备(可以是个人计算机，服务器100，或者网络设备等)执行本发明各个实施例所述方法的全部或部分步骤。而前述的存储介质包括：U盘、移动硬盘、只读存储器(ROM，Read-Only Memory)、随机存取存储器(RAM，Random Access Memory)、磁碟或者光盘等各种可以存储程序代码的介质。需要说明的是，在本文中，诸如第一和第二、另一等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。\n\n[0071]以上所述仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。\n\n[0072]以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应所述以权利要求的保护范围为准。\n\n', '技术领域\n\n[0001]本发明涉及互联网领域，具体而言，涉及一种签核请求处理方法及装置。\n\n背景技术\n\n[0002]在企业管理中，通常具有多种文件、单据、行政流程、货物出入库或者其他事项需要相关签核人进行签核。现有技术中，发起签核的用户通常可以直接对签核人进行选择，这样容易造成签核人选择随意，在签核人选择不正确的情况下，影响正常签核的效率。\n\n发明内容\n\n[0003]有鉴于此，本发明实施例提供了一种签核请求处理方法及装置，在接收到用户的签核请求后，对相应用户的签核人选择权限进行判断，只有当签核请求中签核人在用户的签核人选择权限中，才允许用户选择该签核人，以使签核人选择正确，改善上述问题。\n\n[0004]为了实现上述目的，本发明采用的技术方案如下：\n\n[0005]一种签核请求处理方法，所述方法包括：接收用户发送的签核请求，所述签核请求中包括所要选择的签核人；根据所述签核请求，判断所述用户的签核人选择权限；若所要选择的签核人为所述签核人选择权限范围内的签核人，允许用户选择所述签核请求中的签核人。\n\n[0006]一种签核请求处理装置，所述装置包括：接收模块，用于接收用户发送的签核请求，所述签核请求中包括所要选择的签核人；判断模块，用于根据所述签核请求，判断所述用户的签核人选择权限；应答模块，若所要选择的签核人为所述签核人选择权限范围内的签核人，用于允许用户选择所述签核请求中的签核人。\n\n[0007]本发明实施例提供的签核请求处理方法及装置，在接收到用户发送的签核请求后，判断该签核请求中的签核人是否在该用户的签核人选择权限范围内。若判断结果为是，则说明用户具有选择该签核人的权限，允许用户选择该签核人，以使该签核请求由该选择的签核人签核。避免因签核人选择错误影响该签核请求的签核效率。\n\n[0008]为使本发明的上述目的、特征和优点能更明显易懂，下文特举较佳实施例，并配合所附附图，作详细说明如下。\n\n附图说明\n\n[0009]为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0010]图1示出了本发明实施例提供的服务器的结构示意图；\n\n[0011]图2示出了本发明第一实施例提供的签核请求处理方法的一种流程图；\n\n[0012]图3示出了本发明第一实施例提供的签核请求处理方法的另一种流程图；\n\n[0013]图4示出了本发明第一实施例提供的签核请求处理方法的又一种流程图；\n\n[0014]图5示出了本发明第一实施例提供的签核请求处理方法的还一种流程图；\n\n[0015]图6示出了本发明第二实施例提供的签核请求处理装置的功能模块图。\n\n具体实施方式\n\n[0016]下面将结合本发明实施例中附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。通常在此处附图中描述和示出的本发明实施例的组件可以以各种不同的配置来布置和设计。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0017]应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。同时，在本发明的描述中，术语“第一”、“第二”等仅用于区分描述，而不能理解为指示或暗示相对重要性。\n\n[0018]如图1所示，是本申请服务器100的方框示意图。所述服务器100包括签核请求处理装置200、存储器101、存储控制器102、处理器103、外设接口104及其他。\n\n[0019]所述存储器101、存储控制器102、处理器103、外设接口104各元件相互之间直接或间接地电性连接，以实现数据的传输或交互。例如，这些元件相互之间可通过一条或多条通讯总线或信号线实现电性连接。所述签核请求处理装置200包括至少一个可以软件或固件(firmware)的形式存储于所述存储器101中或固化在所述服务器100的操作系统(operating system，OS)中的软件功能模块。所述处理器103用于执行存储器101中存储的可执行模块，例如所述签核请求处理装置200包括的软件功能模块或计算机程序。\n\n[0020]其中，存储器101可以是，但不限于，随机存取存储器(Random Access Memory，RAM)，只读存储器(Read Only Memory，ROM)，可编程只读存储器(Programmable Read-OnlyMemory，PROM)，可擦除只读存储器(Erasable Programmable Read-Only Memory，EPROM)，电可擦除只读存储器(Electric Erasable Programmable Read-Only Memory，EEPROM)等。其中，存储器101用于存储程序，所述处理器103在接收到执行指令后，执行所述程序，前述本发明实施例任一实施例揭示的流过程定义的服务器100所执行的方法可以应用于处理器103中，或者由处理器103实现。\n\n[0021]处理器103可能是一种集成电路芯片，具有信号的处理能力。上述的处理器103可以是通用处理器，包括中央处理器(Central Processing Unit，简称CPU)、网络处理器(Network Processor，简称NP)等；还可以是数字信号处理器(DSP)、专用集成电路(ASIC)、现成可编程门阵列(FPGA)或者其他可编程逻辑器件、分立门或者晶体管逻辑器件、分立硬件组件。可以实现或者执行本发明实施例中的公开的各方法、步骤及逻辑框图。通用处理器可以是微处理器或者该处理器103也可以是任何常规的处理器等。\n\n[0022]所述外设接口104将各种输入/输出装置耦合至处理器103以及存储器101。在一些实施例中，外设接口104，处理器103以及存储控制器102可以在单个芯片中实现。在其他一些实例中，他们可以分别由独立的芯片实现。\n\n[0023]可以理解的，图1所示的结构仅为示意，服务器100还可以包括比图1中所示更多或更少的组件，或者具有与图1所示不同的配置。图1中所示的各组件可以采用硬件、软件或其组合实现。\n\n[0024]用户在进行行政审批、物品申购等申请流程中，通过发起签核请求，使相应的负责人能对申请的事项进行签核，以使对应的行政审批、物品申购等申请获得批准。\n\n[0025]第一实施例\n\n[0026]本发明实施例提供了一种签核请求处理方法，根据用户的签核人选择权限确定是否允许用户选择其选择的签核人。具体的，请参见图2，该方法包括：\n\n[0027]步骤S110：接收用户发送的签核请求，所述签核请求中包括所要选择的签核人。\n\n[0028]用户通过用户终端发起签核请求，并且确定需要其对该签核请求进行签核的签核人，则该签核请求中包括用户所要选择的签核人，可以理解的，签核请求中包括的所要选择的签核人为所要选择的签核人的相关身份信息。用户终端接收到用户发起的签核请求，将该签核请求发送给服务器100。\n\n[0029]于是，服务器100接收用户通过该用户终端发送的签核请求，。\n\n[0030]当然，进一步的，在本实施例中，还可以包括用户登录。在完成用户登录后，服务器100才接收用户发送的签核请求，使该用户在登录后方可发送签核请求。\n\n[0031]具体的，在步骤S110之前，还可以包括：接收用户的登录请求，所述登录请求中包括所述用户的第一身份标识以及用户输入的登录密码；判断所述第一身份标识与所述登录密码是否互相匹配，若是，允许用户登录。\n\n[0032]用户在用户终端输入登录帐号以及登录密码并触发登录请求。用户终端向服务器100发送登录请求，该登录请求中包括用户输入的登录密码以及表示用户唯一身份信息的第一身份标识。在本实施例中，该第一身份标识可以就是用户输入的登录帐号，也可以是根据登录帐号确定的与该登录帐号相互对应的第一身份标识。\n\n[0033]服务器100接收到登录请求后，对第一身份标识与登录密码进行匹配，判断该第一身份标识对应的登录密码是否是登录请求中的登录密码，若是，则登录请求中的第一身份标识与登录密码相匹配，允许用户登录，以使用户在成功登录后可以发起签核请求。\n\n[0034]当然，若登录请求中的第一身份标识与登录密码不匹配，则该用户无法登录该登录帐号，不能以该登录帐号发起签核请求，即不能向服务器100发送签核请求。\n\n[0035]另外，登录请求中也可以是包括登录帐号和登录密码，服务器100接收到登录请求后，根据登录帐号确定与该登录帐号对应的身份标识，再判断身份标识与登录密码的匹配性。\n\n[0036]步骤S120：根据所述签核请求，判断所述用户的签核人选择权限。\n\n[0037]服务器100接收到的签核请求，根据签核请求中的信息，判断发起该签核请求的用户的签核人选择权限。\n\n[0038]在本实施例提供的一种具体的实施方式中，如图3所示，签核请求中还包括所述用户的第一身份标识，该步骤120可以包括：\n\n[0039]步骤S121A：根据所述第一身份标识，查找所述第一身份标识对应的签核人。\n\n[0040]在服务器100的存储器101或者相应的数据库中，存储有第一身份标识以及与第一身份标识关联存储的该第一身份标识对应的签核人。第一身份标识对应的签核人为该第一身份标识对应的用户可以选择的签核人，并且，第一身份标识对应的签核人的数量由实际需求确定。\n\n[0041]服务器100接收到签核请求后，根据签核请求中的第一身份标识，查找与该第一身份标识关联存储的签核人。\n\n[0042]步骤S122A：判定查找到的所有签核人为所述签核人选择权限范围内的签核人。\n\n[0043]服务器100将根据第一身份标识查找到的所有签核人判定为发起签核请求的用户的签核人选择权限范围内的签核人。\n\n[0044]本实施例还提供了另一种实施方式。在该实施方式中，签核请求中包括所要选择的签核人的第二身份标识，即签核请求中包括的所要选择的签核人的身份信息为该签核人的第二身份标识，该第二身份标识可以唯一表示一个签核人。\n\n[0045]请参见图4，在本实施方式中，步骤S120的根据所述签核请求，判断所述用户的签核人选择权限可以包括：\n\n[0046]步骤S121B：根据所述签核人的第二身份标识，查找与所述第二身份标识对应的签核发起人。\n\n[0047]在服务器100的存储器101或者相应的数据库中，存储有第二身份标识以及与第二身份标识关联存储的该第二身份标识对应的签核发起人。第二身份标识对应的签核发起人为，可以选择该第二身份标识对应的签核人作为签核人的用户。并且，第二身份标识对应的签核发起人的数量由实际需求确定。\n\n[0048]服务器100接收到签核请求后，根据签核请求中的第二身份标识，可以查找到与第二身份标识对应的签核发起人。\n\n[0049]步骤S122B：若所述用户在查找到的所述签核发起人范围内，判定用户选择的签核人为所述签核人选择权限范围内的签核人。\n\n[0050]判断发起该签核请求的用户是否在查找到的签核发起人范围内。具体的判断方式可以是，将发起签核请求的用户的第一身份标识与查找到的所有签核发起人的身份标识进行匹配。若在查找到的签核发起人中存在与第一身份标识匹配的身份标识，则判定用户选择的签核人为所述签核人选择权限范围内的签核人。当然，若在查找到的签核发起人中不存在与第一身份标识匹配的身份标识，则判定用户选择的签核人不为所述签核人选择权限范围内的签核人。\n\n[0051]本实施例还提供了一种实施方式，在该实施方式中，签核请求中包括发起该签核请求的所述用户的级别以及所要选择的签核人的级别。如图5所示，该实施方式中对签核人选择权限的判断可以具体包括：\n\n[0052]步骤S121C：比较所述用户的级别以及所述签核人的级别。\n\n[0053]步骤S122C：若所述用户的级别与所述签核人的级别差值小于预设阈值，判定用户选择的签核人为所述签核人选择权限范围内的签核人。\n\n[0054]服务器100对用户的级别以及所要选择的签核人的级别进行比较。在该实施方式中，对每一个级别可以有一个量化值，如第一级别的量化值为1，第二级别的量化值为2等。对级别的比较可以通过不同级别的量化值的比较。当然，对两个级别的比较也可以是其他方式，在本实施例中并不做限定。\n\n[0055]若比较结果为用户的级别与所要选择的签核人的级别之间的差值小于预设阈值，则该签核人为发起签核请求的用户可以选择的签核人，判定用户选择的签核人为所述签核人选择权限范围内的签核人。\n\n[0056]当然，若比较结果为用户的级别与所要选择的签核人的级别之间的差值大于或等于预设阈值，该用户不具有选择该签核人的权限，即用户选择的签核人不为所述签核人选择权限范围内的签核人。\n\n[0057]步骤S130：若所要选择的签核人为所述签核人选择权限范围内的签核人，允许用户选择所述签核请求中的签核人。\n\n[0058]若签核请求中包括的用户所要选择的签核人在用户的签核人选择权限范围内，则表明该用户可以选择该签核人，此时，允许用户选择该签核请求中的签核人，即用户可以成功选择该所要选择的签核人作为其发送的签核请求的签核人。\n\n[0059]进一步的，在本实施例中，若用户所要选择的签核人不在所述签核人选择权限范围内，则拒绝所述用户选择所述签核请求中的签核人，即用户不能成功选择不在签核人选择权限范围内的作为签核人。\n\n[0060]第二实施例\n\n[0061]本实施例提供了一种签核请求处理装置200，如图6所示，所述装置包括：接收模块210，用于接收用户发送的签核请求，所述签核请求中包括所要选择的签核人；判断模块220，用于根据所述签核请求，判断所述用户的签核人选择权限；应答模块230，若所要选择的签核人为所述签核人选择权限范围内的签核人，用于允许用户选择所述签核请求中的签核人。\n\n[0062]进一步的，在本实施例的一种具体实施方式中，所述签核请求中还可以包括所述用户的第一身份标识，所述判断模块220包括：查找单元，用于根据所述第一身份标识，查找所述第一身份标识对应的签核人；判定单元，用于判定查找到的所有签核人为所述签核人选择权限范围内的签核人。\n\n[0063]另外，本实施例的另一种实施方式中，所述签核请求中包括所要选择的签核人的第二身份标识，所述判断模块220包括：查找单元，用于根据所述签核人的第二身份标识，查找与所述第二身份标识对应的签核发起人；判定单元，若所述用户在查找到的所述签核发起人范围内，用于判定用户选择的签核人为所述签核人选择权限范围内的签核人。\n\n[0064]本实施例还提供了一种实施方式，在该实施方式中，所述签核请求中包括所述用户的级别以及所要选择的签核人的级别，所述判断模块220包括：比较单元，用于比较所述用户的级别以及所述签核人的级别；判定单元，若所述用户的级别与所述签核人的级别差值小于预设阈值，用于判定用户选择的签核人为所述签核人选择权限范围内的签核人。\n\n[0065]进一步的，在本实施例中，若所要选择的签核人不在所述签核人选择权限范围内，应答模块230可以用于拒绝所述用户选择所述签核请求中的签核人。\n\n[0066]进一步的，本实施例提供的签核请求处理装置200可以在用户登录后才接收用户发送签核请求。于是，该装置200还可以包括登录模块，用于接收用户的登录请求，所述登录请求中包括所述用户的第一身份标识以及用户输入的登录密码；用于判断所述第一身份标识与所述登录密码是否互相匹配，以及当在第一身份标识与登录密码相匹配的情况下，允许用户登录。\n\n[0067]综上所述，本发明实施例提供的签核请求处理方法及装置，在接收到包括要选择的签核人的签核请求后，首先判断发送该签核请求的用户的签核人选择权限，若用户所要选择的签核人在该签核人选择权限范围内，则允许用户选择该签核人作为对该签核请求进行签核的签核人。使用户选择的签核人为签核人选择权限范围内的签核人，以避免用户选择签核人不正确造成签核流程不能顺利进行，影响签核效率，同时，也可以避免影响错误选择的签核人的工作。\n\n[0068]在本申请所提供的几个实施例中，应该理解到，所揭露的装置和方法，也可以通过其它的方式实现。以上所描述的装置实施例仅仅是示意性的，例如，附图中的流程图和框图显示了根据本发明的多个实施例的装置、方法和计算机程序产品的可能实现的体系架构、功能和操作。在这点上，流程图或框图中的每个方框可以代表一个模块、程序段或代码的一部分，所述模块、程序段或代码的一部分包含一个或多个用于实现规定的逻辑功能的可执行指令。也应当注意，在有些作为替换的实现方式中，方框中所标注的功能也可以以不同于附图中所标注的顺序发生。例如，两个连续的方框实际上可以基本并行地执行，它们有时也可以按相反的顺序执行，这依所涉及的功能而定。也要注意的是，框图和/或流程图中的每个方框、以及框图和/或流程图中的方框的组合，可以用执行规定的功能或动作的专用的基于硬件的系统来实现，或者可以用专用硬件与计算机指令的组合来实现。\n\n[0069]另外，在本发明各个实施例中的各功能模块可以集成在一起形成一个独立的部分，也可以是各个模块单独存在，也可以两个或两个以上模块集成形成一个独立的部分。\n\n[0070]所述功能如果以软件功能模块的形式实现并作为独立的产品销售或使用时，可以存储在一个计算机可读取存储介质中。基于这样的理解，本发明的技术方案本质上或者说对现有技术做出贡献的部分或者该技术方案的部分可以以软件产品的形式体现出来，该计算机软件产品存储在一个存储介质中，包括若干指令用以使得一台计算机设备(可以是个人计算机，服务器100，或者网络设备等)执行本发明各个实施例所述方法的全部或部分步骤。而前述的存储介质包括：U盘、移动硬盘、只读存储器(ROM，Read-Only Memory)、随机存取存储器(RAM，Random Access Memory)、磁碟或者光盘等各种可以存储程序代码的介质。需要说明的是，在本文中，诸如第一和第二、另一等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。\n\n[0071]以上所述仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。\n\n[0072]以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应所述以权利要求的保护范围为准。\n\n');
INSERT INTO `os_patent_instruction_text` VALUES (11145, 24083, '技术领域\n\n[0001]本发明涉及网络技术领域，涉及一种发起签核的方法，还涉及一种发起签核的设备。\n\n背景技术\n\n[0002]在现有技术中，文件的签核一般是人工来进行的，在具体的过程中，需要将相应的文件打印出来，并以人工的方式传递给各个需要签核的签核人处，操作流程繁琐，费时费力，效率低下。\n\n发明内容\n\n[0003]针对现有技术中的缺陷，本发明提出了一种发起签核的方法和设备，用以克服现有技术中缺陷，实现方便快捷的发起签核，提高签核的效率。\n\n[0004]具体的，本发明提出了以下具体的实施例：\n\n[0005]本发明实施例提出了一种发起签核的方法，应用于签核系统中，该方法包括：\n\n[0006]接收用户的多组选择指令，其中，各组选择指令中包括用于选择签核人的职位信息的第一选择指令和用于选择签核位置的第二选择指令；其中，各组选择指令在时间上存在先后顺序；\n\n[0007]针对各组选择指令，基于所述第一选择指令确定所选择的签核人的职位信息，同时基于所述第二选择指令确定所选择的签核位置；\n\n[0008]将所述签核位置设置为所述职位信息对应的签核人的签核位置；\n\n[0009]按照所述先后顺序将签核电子文档发送给各所述签核人。\n\n[0010]在一个具体的实施例中，所述签核系统中预设有签核人职位图标，各签核人职位图标与所述签核人的职位信息关联；\n\n[0011]各组选择指令中的第一选择指令，是通过以下方式获取的：\n\n[0012]接收用户点击所述签核人职位图标所生成的职位选择信号；其中，所述职位选择信号中包含有所选择签核人的职位信息；\n\n[0013]基于所述职位选择信号生成第一选择指令。\n\n[0014]在一个具体的实施例中，所述签核电子文档预设有多个签核位置；\n\n[0015]各组选择指令中的第二选择指令，是通过以下方式获取的：\n\n[0016]接收用户点击所述签核位置所生成的位置选择信号；其中，所述位置选择信息中包含有所选择签核位置的信息；\n\n[0017]基于所述位置选择信号生成第二选择指令。\n\n[0018]在一个具体的实施例中，所述“按照所述先后顺序将签核电子文档发送给各所述签核人”，包括：\n\n[0019]基于各组选择指令在时间上的先后顺序确定签核人进行签核的顺序以及当前需要进行签核的签核人，并将所述签核电子文档发送给确定的签核人；\n\n[0020]待当前的签核人签核完成，基于当前的签核人的签核生成新的签核电子文档；\n\n[0021]将新生成的签核电子文档发送给确定的下一位签核人。\n\n[0022]在一个具体的实施例中，该方法还包括：\n\n[0023]基于所述职位信息确定对应所述职位信息的各签核人的联系方式；\n\n[0024]针对各签核人，当签核电子文档停留在签核人的时间超过预设时间阈值，生成提示签核的信息；\n\n[0025]基于所述联系方式将所述信息发送给所述签核人，以提醒所述签核人进行签核。\n\n[0026]本发明实施例还提出了一种发起签核的设备，应用于签核系统中，该设备包括：\n\n[0027]接收模块，用于接收用户的多组选择指令，其中，各组选择指令中包括用于选择签核人的职位信息的第一选择指令和用于选择签核位置的第二选择指令；其中，各组选择指令在时间上存在先后顺序；\n\n[0028]确定模块，用于针对各组选择指令，基于所述第一选择指令确定所选择的签核人的职位信息，同时基于所述第二选择指令确定所选择的签核位置；\n\n[0029]设置模块，用于将所述签核位置设置为所述职位信息对应的签核人的签核位置；\n\n[0030]发送模块，用于按照所述先后顺序将签核电子文档发送给各所述签核人。\n\n[0031]在一个具体的实施例中，所述签核系统中预设有签核人职位图标，各签核人职位图标与所述签核人的职位信息关联；\n\n[0032]所述接收模块获取各组选择指令中的第一选择指令，包括：\n\n[0033]所述接收模块获取各组选择指令中的第一选择指令，是通过以下方式获取的：\n\n[0034]接收用户点击所述签核人职位图标所生成的职位选择信号；其中，所述职位选择信号中包含有所选择签核人的职位信息；\n\n[0035]基于所述职位选择信号生成第一选择指令。\n\n[0036]在一个具体的实施例中，所述签核电子文档预设有多个签核位置；\n\n[0037]所述接收模块获取各组选择指令中的第二选择指令，包括：\n\n[0038]所述接收模块接收用户点击所述签核位置所生成的位置选择信号；其中，所述位置选择信息中包含有所选择签核位置的信息；\n\n[0039]基于所述位置选择信号生成第二选择指令。\n\n[0040]在一个具体的实施例中，所述发送模块，用于：\n\n[0041]基于各组选择指令在时间上的先后顺序确定签核人进行签核的顺序以及当前需要进行签核的签核人，并将所述签核电子文档发送给确定的签核人；\n\n[0042]待当前的签核人签核完成，基于当前的签核人的签核生成新的签核电子文档；\n\n[0043]将新生成的签核电子文档发送给确定的下一位签核人。\n\n[0044]在一个具体的实施例中，该设备还包括：\n\n[0045]提醒模块，用于基于所述职位信息确定对应所述职位信息的各签核人的联系方式；\n\n[0046]针对各签核人，当签核电子文档停留在签核人的时间超过预设时间阈值，生成提示签核的信息；\n\n[0047]基于所述联系方式将所述信息发送给所述签核人，以提醒所述签核人进行签核。\n\n[0048]与现有技术相比，本发明提出了一种发起签核的方法和设备，应用于签核系统中，其中该方法包括：接收用户的多组选择指令，其中，各组选择指令中包括用于选择签核人的职位信息的第一选择指令和用于选择签核位置的第二选择指令；其中，各组选择指令在时间上存在先后顺序；\n\n[0049]针对各组选择指令，基于所述第一选择指令确定所选择的签核人的职位信息，同时基于所述第二选择指令确定所选择的签核位置；将所述签核位置设置为所述职位信息对应的签核人的签核位置；按照所述先后顺序将签核电子文档发送给各所述签核人。以此，使得发起签核地过程方便快捷，方便了签核发起用户的操作。\n\n附图说明\n\n[0050]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0051]图1为本发明实施例提出的一种发起签核的方法流程示意图；\n\n[0052]图2为本发明实施例提出的一种获取第一选择指令的方法的流程示意图；\n\n[0053]图3为本发明实施例提出的一种获取第二选择指令的方法的流程示意图；\n\n[0054]图4为本发明实施例提出的一种电子签核文档的界面示意图；\n\n[0055]图5为本发明实施例提出的一种发送签核电子文档的方法的流程示意图；\n\n[0056]图6为本发明实施例提出的一种发起签核的设备结构示意图；\n\n[0057]图7为本发明实施例提出的一种发起签核的设备结构示意图。\n\n具体实施方式\n\n[0058]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。通常在此处附图中描述和出示的本发明实施例的组件可以以各种不同的配置来布置和设计。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0059]针对现有技术中的缺陷，本发明人发现在实际的应用中，签核过程非常繁琐，效率低下，为此，本发明提出了一种发起签核的方法和设备，应用于签核系统中，具体应用于电子签核过程，用以电子签核过程的效率。\n\n[0060]具体的，本发明提出了以下具体的实施例：\n\n[0061]实施例1\n\n[0062]本发明实施例1公开了一种发起签核的方法，应用于签核系统中，如图1所示，该方法包括：\n\n[0063]步骤101、接收用户的多组选择指令，其中，各组选择指令中包括用于选择签核人的职位信息的第一选择指令和用于选择签核位置的第二选择指令；其中，各组选择指令在时间上存在先后顺序；\n\n[0064]步骤102、针对各组选择指令，基于所述第一选择指令确定所选择的签核人的职位信息，同时基于所述第二选择指令确定所选择的签核位置；\n\n[0065]步骤103、将所述签核位置设置为所述职位信息对应的签核人的签核位置；\n\n[0066]步骤104、按照所述先后顺序将签核电子文档发送给各所述签核人。\n\n[0067]在一个具体的实施例中，用户可以在一个空白的待签核的模板上进行操作，具体的例如可以自定义待签核的项目，例如请假，报销等等签核请求；此外，还需要选择签核人，在一个具体的实施例中，所述签核系统中预设有签核人职位图标，各签核人职位图标与所述签核人的职位信息关联；在此情况下，步骤101中，各组选择指令中的第一选择指令，如图2所示，是通过以下方式获取的：\n\n[0068]步骤11、接收用户点击所述签核人职位图标所生成的职位选择信号；其中，所述职位选择信号中包含有所选择签核人的职位信息；\n\n[0069]步骤12、基于所述职位选择信号生成第一选择指令。\n\n[0070]在此，以一个具体的例子来进行说明，签核系统可以搭载在一个具体的公司的网络系统中，并基于该公司的职位信息进行筛选，将某些职位作为签核人，后续基于所筛选出的职位信息与签核人职位图标进行关联，具体的，例如有签核人职位可以为“总经理”、“经理”；对应的可以选择写有签核人职位的图标进行关联；具体的，一个签核人职位图标对应一个职位。\n\n[0071]当要发起签核时，用户也即签核发起人会在显示界面依次点击多个签核人职位图标，每次点击都会生成对应的职位选择信号；例如点击了关于总经理的图标，就会生成包含有总经理的信息的职位选择信号；然后基于该职位选择信号生成第一选择指令，第一选择指令用于选择总经理进行签核。\n\n[0072]选择了签核人之后，需要为各签核人选择对应的签核位置，具体的，在一个具体的实施例中，所述签核电子文档预设有多个签核位置；由此，在步骤101中，各组选择指令中的第二选择指令，如图3所示，是通过以下方式获取的：\n\n[0073]步骤21、接收用户点击所述签核位置所生成的位置选择信号；其中，所述位置选择信息中包含有所选择签核位置的信息；\n\n[0074]步骤22、基于所述位置选择信号生成第二选择指令。\n\n[0075]而在一个具体的实施例中，所述签核电子文档预设有多个预设签核位置，如图4所示，为一种具体的签核电子文档的界面示意图，图4中有三个预设签核位置，分别为第一签核位置、第二签核位置、第三签核位置。\n\n[0076]在此情况下，例如用户在点击完签核人(例如为总经理)之后，该用户接下来通过鼠标或者以触控的方式点击了签核电子文档上的第三签核位置，由此会生成的位置选择信号，并由此生成第二选择指令，该第二选择指令用于将第三签核位置设置为所选择的总经理的签核位置。\n\n[0077]对于其他组选择指令，进行与上述相同的步骤；以此依次确定第一选择指令所确定的签核人的签核位置；后续在进行具体签核时，只要完成签核，签核人，例如总经理所签核的名字或者批注等会自动出现在对应的签核位置。\n\n[0078]在此以一个具体的例子来进行说明，用户点击签核人职位图标，第一下点击签核人职位图标(例如对应选择总经理作为签核人)，第二下点击签名位置(例如为位置1)；第三下点击签核人图标(例如对应选择经理作为签核人)，第四下点击签名位置(例如为位置2)；第五下点击签核人图标(例如对应选择部门经理作为签核人)，第六下点击签名位置(例如为位置3)。\n\n[0079]以此第1组选择指令中包括第一下点击(对应第一选择指令)与第二下点击(对应第二选择指令)所生成的指令；第2组选择指令中包括第三下点击(对应第一选择指令)与第四下点击(对应第二选择指令)所生成的指令；第3组选择指令与此类似，包括第五下点击(对应第一选择指令)与第六下点击(对应第二选择指令)所生成的指令；并以此类推，直到选择完毕。\n\n[0080]在获取到各组选择指令之后，需要进行关联，也即进行步骤103、具体的，也即将所述签核位置设置为所述签核人的签核位置。\n\n[0081]仍以上述为例来进行说明，针对第1组选择指令，总经理作为签核人，将位置1作为总经理的签核位置；对应的，针对第2组选择指令，将位置2作为经理的签核位置；针对第3组选择指令，将位置3作为部门经理的签核位置。\n\n[0082]在为各签核人设置了签核位置之后，需要将签核电子文档发送到各个签核人，也即进行步骤103，具体的步骤103、即“按照所述先后顺序将签核电子文档发送给各所述签核人”，如图5所示，包括：\n\n[0083]步骤31、基于各组选择指令在时间上的先后顺序确定签核人进行签核的顺序以及当前需要进行签核的签核人，并将所述签核电子文档发送给确定的签核人；\n\n[0084]步骤32、待当前的签核人签核完成，基于当前的签核人的签核生成新的签核电子文档；\n\n[0085]步骤33、将新生成的签核电子文档发送给确定的下一位签核人。\n\n[0086]在此，以一个具体的例子来进行说明，若按照各组选择指令在时间上的先后顺序设置签核的先后顺序，仍以上述为例来进行说明，时间的从先到后的顺序依次为:第1组选择指令、第2组选择指令、第3组选择指令；对应的签核人的顺序则依次分别为总经理、经理、部门经理。\n\n[0087]在此情况下，首先将签核电子文档发送给总经理进行签核，待总经理签核完成之后，基于总经理的签核，生成新的签核电子文档(例如，该签核电子文档中包含有总经理的签名)，并将新的签核电子文档发送给经理，经理在总经理签核的基础上进行签核，经理签核完成之后，一个具体的例子中，生成的新的签核电子文档中会包含有总经理以及经理的签名，然后会被发送给部门经理进行签核，以此类推，直到签核完成。\n\n[0088]在一个具体的实施例中，考虑到签核电子文档发送到签核人后，签核人可能会没注意到，因此为了提醒签核人，该方法还包括：\n\n[0089]基于所述职位信息确定对应所述职位信息的各签核人的联系方式；\n\n[0090]针对各签核人，当签核电子文档停留在签核人的时间超过预设时间阈值，生成提示签核的信息；\n\n[0091]基于所述联系方式将所述信息发送给所述签核人，以提醒所述签核人进行签核。\n\n[0092]在该具体的实施例中，查询对应职位信息的签核人的联系方式，以上述为例，根据需要查询对应总经理，经理，以及部门经理的联系方式，例如已经将签核电子文档发送给部门经理了，但过了很长时间，例如3天，部门经理人就没有进行签核，在此情况下，会基于获取的部门经理的联系方式，生成提示信息，来提醒部门经理及时进行签核。优选的联系方式为手机号，以此提示信息可以为短信。\n\n[0093]实施例2\n\n[0094]本发明实施例2公开了一种发起签核的设备，应用于签核系统中，如图6所示，该设备包括：\n\n[0095]接收模块201，用于接收用户的多组选择指令，其中，各组选择指令中包括用于选择签核人的职位信息的第一选择指令和用于选择签核位置的第二选择指令；其中，各组选择指令在时间上存在先后顺序；\n\n[0096]确定模块202，用于针对各组选择指令，基于所述第一选择指令确定所选择的签核人的职位信息，同时基于所述第二选择指令确定所选择的签核位置；\n\n[0097]设置模块203，用于将所述签核位置设置为所述职位信息对应的签核人的签核位置；\n\n[0098]发送模块204，用于按照所述先后顺序将签核电子文档发送给各所述签核人。\n\n[0099]在一个具体的实施例中，所述签核系统中预设有签核人职位图标，各签核人职位图标与所述签核人的职位信息关联；\n\n[0100]所述接收模块201获取各组选择指令中的第一选择指令，包括：\n\n[0101]所述接收模块202获取各组选择指令中的第一选择指令，是通过以下方式获取的：\n\n[0102]接收用户点击所述签核人职位图标所生成的职位选择信号；其中，所述职位选择信号中包含有所选择签核人的职位信息；\n\n[0103]基于所述职位选择信号生成第一选择指令。\n\n[0104]在一个具体的实施例中，所述签核电子文档预设有多个签核位置；\n\n[0105]所述接收模块201获取各组选择指令中的第二选择指令，包括：\n\n[0106]所述接收模块201接收用户点击所述签核位置所生成的位置选择信号；其中，所述位置选择信息中包含有所选择签核位置的信息；\n\n[0107]基于所述位置选择信号生成第二选择指令。\n\n[0108]在一个具体的实施例中，所述发送模块204，用于：\n\n[0109]基于各组选择指令在时间上的先后顺序确定签核人进行签核的顺序以及当前需要进行签核的签核人，并将所述签核电子文档发送给确定的签核人；\n\n[0110]待当前的签核人签核完成，基于当前的签核人的签核生成新的签核电子文档；\n\n[0111]将新生成的签核电子文档发送给确定的下一位签核人。\n\n[0112]在一个具体的实施例中，如图7所示，该设备还包括：\n\n[0113]提醒模块205，用于基于所述职位信息确定对应所述职位信息的各签核人的联系方式；\n\n[0114]针对各签核人，当签核电子文档停留在签核人的时间超过预设时间阈值，生成提示签核的信息；\n\n[0115]基于所述联系方式将所述信息发送给所述签核人，以提醒所述签核人进行签核。\n\n[0116]与现有技术相比，本发明提出了一种发起签核的方法和设备，应用于签核系统中，其中该方法包括：接收用户的多组选择指令，其中，各组选择指令中包括用于选择签核人的职位信息的第一选择指令和用于选择签核位置的第二选择指令；其中，各组选择指令在时间上存在先后顺序；针对各组选择指令，基于所述第一选择指令确定所选择的签核人的职位信息，同时基于所述第二选择指令确定所选择的签核位置；将所述签核位置设置为所述职位信息对应的签核人的签核位置；按照所述先后顺序将签核电子文档发送给各所述签核人；以此，使得发起签核地过程方便快捷，方便了签核发起用户的操作。\n\n[0117]本领域技术人员可以理解附图只是一个优选实施场景的示意图，附图中的模块或流程并不一定是实施本发明所必须的。\n\n[0118]本领域技术人员可以理解实施场景中的装置中的模块可以按照实施场景描述进行分布于实施场景的装置中，也可以进行相应变化位于不同于本实施场景的一个或多个装置中。上述实施场景的模块可以合并为一个模块，也可以进一步拆分成多个子模块。\n\n[0119]上述本发明序号仅仅为了描述，不代表实施场景的优劣。\n\n[0120]以上公开的仅为本发明的几个具体实施场景，但是，本发明并非局限于此，任何本领域的技术人员能思之的变化都应落入本发明的保护范围。\n\n', '技术领域\n\n[0001]本发明涉及网络技术领域，涉及一种发起签核的方法，还涉及一种发起签核的设备。\n\n背景技术\n\n[0002]在现有技术中，文件的签核一般是人工来进行的，在具体的过程中，需要将相应的文件打印出来，并以人工的方式传递给各个需要签核的签核人处，操作流程繁琐，费时费力，效率低下。\n\n发明内容\n\n[0003]针对现有技术中的缺陷，本发明提出了一种发起签核的方法和设备，用以克服现有技术中缺陷，实现方便快捷的发起签核，提高签核的效率。\n\n[0004]具体的，本发明提出了以下具体的实施例：\n\n[0005]本发明实施例提出了一种发起签核的方法，应用于签核系统中，该方法包括：\n\n[0006]接收用户的多组选择指令，其中，各组选择指令中包括用于选择签核人的职位信息的第一选择指令和用于选择签核位置的第二选择指令；其中，各组选择指令在时间上存在先后顺序；\n\n[0007]针对各组选择指令，基于所述第一选择指令确定所选择的签核人的职位信息，同时基于所述第二选择指令确定所选择的签核位置；\n\n[0008]将所述签核位置设置为所述职位信息对应的签核人的签核位置；\n\n[0009]按照所述先后顺序将签核电子文档发送给各所述签核人。\n\n[0010]在一个具体的实施例中，所述签核系统中预设有签核人职位图标，各签核人职位图标与所述签核人的职位信息关联；\n\n[0011]各组选择指令中的第一选择指令，是通过以下方式获取的：\n\n[0012]接收用户点击所述签核人职位图标所生成的职位选择信号；其中，所述职位选择信号中包含有所选择签核人的职位信息；\n\n[0013]基于所述职位选择信号生成第一选择指令。\n\n[0014]在一个具体的实施例中，所述签核电子文档预设有多个签核位置；\n\n[0015]各组选择指令中的第二选择指令，是通过以下方式获取的：\n\n[0016]接收用户点击所述签核位置所生成的位置选择信号；其中，所述位置选择信息中包含有所选择签核位置的信息；\n\n[0017]基于所述位置选择信号生成第二选择指令。\n\n[0018]在一个具体的实施例中，所述“按照所述先后顺序将签核电子文档发送给各所述签核人”，包括：\n\n[0019]基于各组选择指令在时间上的先后顺序确定签核人进行签核的顺序以及当前需要进行签核的签核人，并将所述签核电子文档发送给确定的签核人；\n\n[0020]待当前的签核人签核完成，基于当前的签核人的签核生成新的签核电子文档；\n\n[0021]将新生成的签核电子文档发送给确定的下一位签核人。\n\n[0022]在一个具体的实施例中，该方法还包括：\n\n[0023]基于所述职位信息确定对应所述职位信息的各签核人的联系方式；\n\n[0024]针对各签核人，当签核电子文档停留在签核人的时间超过预设时间阈值，生成提示签核的信息；\n\n[0025]基于所述联系方式将所述信息发送给所述签核人，以提醒所述签核人进行签核。\n\n[0026]本发明实施例还提出了一种发起签核的设备，应用于签核系统中，该设备包括：\n\n[0027]接收模块，用于接收用户的多组选择指令，其中，各组选择指令中包括用于选择签核人的职位信息的第一选择指令和用于选择签核位置的第二选择指令；其中，各组选择指令在时间上存在先后顺序；\n\n[0028]确定模块，用于针对各组选择指令，基于所述第一选择指令确定所选择的签核人的职位信息，同时基于所述第二选择指令确定所选择的签核位置；\n\n[0029]设置模块，用于将所述签核位置设置为所述职位信息对应的签核人的签核位置；\n\n[0030]发送模块，用于按照所述先后顺序将签核电子文档发送给各所述签核人。\n\n[0031]在一个具体的实施例中，所述签核系统中预设有签核人职位图标，各签核人职位图标与所述签核人的职位信息关联；\n\n[0032]所述接收模块获取各组选择指令中的第一选择指令，包括：\n\n[0033]所述接收模块获取各组选择指令中的第一选择指令，是通过以下方式获取的：\n\n[0034]接收用户点击所述签核人职位图标所生成的职位选择信号；其中，所述职位选择信号中包含有所选择签核人的职位信息；\n\n[0035]基于所述职位选择信号生成第一选择指令。\n\n[0036]在一个具体的实施例中，所述签核电子文档预设有多个签核位置；\n\n[0037]所述接收模块获取各组选择指令中的第二选择指令，包括：\n\n[0038]所述接收模块接收用户点击所述签核位置所生成的位置选择信号；其中，所述位置选择信息中包含有所选择签核位置的信息；\n\n[0039]基于所述位置选择信号生成第二选择指令。\n\n[0040]在一个具体的实施例中，所述发送模块，用于：\n\n[0041]基于各组选择指令在时间上的先后顺序确定签核人进行签核的顺序以及当前需要进行签核的签核人，并将所述签核电子文档发送给确定的签核人；\n\n[0042]待当前的签核人签核完成，基于当前的签核人的签核生成新的签核电子文档；\n\n[0043]将新生成的签核电子文档发送给确定的下一位签核人。\n\n[0044]在一个具体的实施例中，该设备还包括：\n\n[0045]提醒模块，用于基于所述职位信息确定对应所述职位信息的各签核人的联系方式；\n\n[0046]针对各签核人，当签核电子文档停留在签核人的时间超过预设时间阈值，生成提示签核的信息；\n\n[0047]基于所述联系方式将所述信息发送给所述签核人，以提醒所述签核人进行签核。\n\n[0048]与现有技术相比，本发明提出了一种发起签核的方法和设备，应用于签核系统中，其中该方法包括：接收用户的多组选择指令，其中，各组选择指令中包括用于选择签核人的职位信息的第一选择指令和用于选择签核位置的第二选择指令；其中，各组选择指令在时间上存在先后顺序；\n\n[0049]针对各组选择指令，基于所述第一选择指令确定所选择的签核人的职位信息，同时基于所述第二选择指令确定所选择的签核位置；将所述签核位置设置为所述职位信息对应的签核人的签核位置；按照所述先后顺序将签核电子文档发送给各所述签核人。以此，使得发起签核地过程方便快捷，方便了签核发起用户的操作。\n\n附图说明\n\n[0050]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0051]图1为本发明实施例提出的一种发起签核的方法流程示意图；\n\n[0052]图2为本发明实施例提出的一种获取第一选择指令的方法的流程示意图；\n\n[0053]图3为本发明实施例提出的一种获取第二选择指令的方法的流程示意图；\n\n[0054]图4为本发明实施例提出的一种电子签核文档的界面示意图；\n\n[0055]图5为本发明实施例提出的一种发送签核电子文档的方法的流程示意图；\n\n[0056]图6为本发明实施例提出的一种发起签核的设备结构示意图；\n\n[0057]图7为本发明实施例提出的一种发起签核的设备结构示意图。\n\n具体实施方式\n\n[0058]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。通常在此处附图中描述和出示的本发明实施例的组件可以以各种不同的配置来布置和设计。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0059]针对现有技术中的缺陷，本发明人发现在实际的应用中，签核过程非常繁琐，效率低下，为此，本发明提出了一种发起签核的方法和设备，应用于签核系统中，具体应用于电子签核过程，用以电子签核过程的效率。\n\n[0060]具体的，本发明提出了以下具体的实施例：\n\n[0061]实施例1\n\n[0062]本发明实施例1公开了一种发起签核的方法，应用于签核系统中，如图1所示，该方法包括：\n\n[0063]步骤101、接收用户的多组选择指令，其中，各组选择指令中包括用于选择签核人的职位信息的第一选择指令和用于选择签核位置的第二选择指令；其中，各组选择指令在时间上存在先后顺序；\n\n[0064]步骤102、针对各组选择指令，基于所述第一选择指令确定所选择的签核人的职位信息，同时基于所述第二选择指令确定所选择的签核位置；\n\n[0065]步骤103、将所述签核位置设置为所述职位信息对应的签核人的签核位置；\n\n[0066]步骤104、按照所述先后顺序将签核电子文档发送给各所述签核人。\n\n[0067]在一个具体的实施例中，用户可以在一个空白的待签核的模板上进行操作，具体的例如可以自定义待签核的项目，例如请假，报销等等签核请求；此外，还需要选择签核人，在一个具体的实施例中，所述签核系统中预设有签核人职位图标，各签核人职位图标与所述签核人的职位信息关联；在此情况下，步骤101中，各组选择指令中的第一选择指令，如图2所示，是通过以下方式获取的：\n\n[0068]步骤11、接收用户点击所述签核人职位图标所生成的职位选择信号；其中，所述职位选择信号中包含有所选择签核人的职位信息；\n\n[0069]步骤12、基于所述职位选择信号生成第一选择指令。\n\n[0070]在此，以一个具体的例子来进行说明，签核系统可以搭载在一个具体的公司的网络系统中，并基于该公司的职位信息进行筛选，将某些职位作为签核人，后续基于所筛选出的职位信息与签核人职位图标进行关联，具体的，例如有签核人职位可以为“总经理”、“经理”；对应的可以选择写有签核人职位的图标进行关联；具体的，一个签核人职位图标对应一个职位。\n\n[0071]当要发起签核时，用户也即签核发起人会在显示界面依次点击多个签核人职位图标，每次点击都会生成对应的职位选择信号；例如点击了关于总经理的图标，就会生成包含有总经理的信息的职位选择信号；然后基于该职位选择信号生成第一选择指令，第一选择指令用于选择总经理进行签核。\n\n[0072]选择了签核人之后，需要为各签核人选择对应的签核位置，具体的，在一个具体的实施例中，所述签核电子文档预设有多个签核位置；由此，在步骤101中，各组选择指令中的第二选择指令，如图3所示，是通过以下方式获取的：\n\n[0073]步骤21、接收用户点击所述签核位置所生成的位置选择信号；其中，所述位置选择信息中包含有所选择签核位置的信息；\n\n[0074]步骤22、基于所述位置选择信号生成第二选择指令。\n\n[0075]而在一个具体的实施例中，所述签核电子文档预设有多个预设签核位置，如图4所示，为一种具体的签核电子文档的界面示意图，图4中有三个预设签核位置，分别为第一签核位置、第二签核位置、第三签核位置。\n\n[0076]在此情况下，例如用户在点击完签核人(例如为总经理)之后，该用户接下来通过鼠标或者以触控的方式点击了签核电子文档上的第三签核位置，由此会生成的位置选择信号，并由此生成第二选择指令，该第二选择指令用于将第三签核位置设置为所选择的总经理的签核位置。\n\n[0077]对于其他组选择指令，进行与上述相同的步骤；以此依次确定第一选择指令所确定的签核人的签核位置；后续在进行具体签核时，只要完成签核，签核人，例如总经理所签核的名字或者批注等会自动出现在对应的签核位置。\n\n[0078]在此以一个具体的例子来进行说明，用户点击签核人职位图标，第一下点击签核人职位图标(例如对应选择总经理作为签核人)，第二下点击签名位置(例如为位置1)；第三下点击签核人图标(例如对应选择经理作为签核人)，第四下点击签名位置(例如为位置2)；第五下点击签核人图标(例如对应选择部门经理作为签核人)，第六下点击签名位置(例如为位置3)。\n\n[0079]以此第1组选择指令中包括第一下点击(对应第一选择指令)与第二下点击(对应第二选择指令)所生成的指令；第2组选择指令中包括第三下点击(对应第一选择指令)与第四下点击(对应第二选择指令)所生成的指令；第3组选择指令与此类似，包括第五下点击(对应第一选择指令)与第六下点击(对应第二选择指令)所生成的指令；并以此类推，直到选择完毕。\n\n[0080]在获取到各组选择指令之后，需要进行关联，也即进行步骤103、具体的，也即将所述签核位置设置为所述签核人的签核位置。\n\n[0081]仍以上述为例来进行说明，针对第1组选择指令，总经理作为签核人，将位置1作为总经理的签核位置；对应的，针对第2组选择指令，将位置2作为经理的签核位置；针对第3组选择指令，将位置3作为部门经理的签核位置。\n\n[0082]在为各签核人设置了签核位置之后，需要将签核电子文档发送到各个签核人，也即进行步骤103，具体的步骤103、即“按照所述先后顺序将签核电子文档发送给各所述签核人”，如图5所示，包括：\n\n[0083]步骤31、基于各组选择指令在时间上的先后顺序确定签核人进行签核的顺序以及当前需要进行签核的签核人，并将所述签核电子文档发送给确定的签核人；\n\n[0084]步骤32、待当前的签核人签核完成，基于当前的签核人的签核生成新的签核电子文档；\n\n[0085]步骤33、将新生成的签核电子文档发送给确定的下一位签核人。\n\n[0086]在此，以一个具体的例子来进行说明，若按照各组选择指令在时间上的先后顺序设置签核的先后顺序，仍以上述为例来进行说明，时间的从先到后的顺序依次为:第1组选择指令、第2组选择指令、第3组选择指令；对应的签核人的顺序则依次分别为总经理、经理、部门经理。\n\n[0087]在此情况下，首先将签核电子文档发送给总经理进行签核，待总经理签核完成之后，基于总经理的签核，生成新的签核电子文档(例如，该签核电子文档中包含有总经理的签名)，并将新的签核电子文档发送给经理，经理在总经理签核的基础上进行签核，经理签核完成之后，一个具体的例子中，生成的新的签核电子文档中会包含有总经理以及经理的签名，然后会被发送给部门经理进行签核，以此类推，直到签核完成。\n\n[0088]在一个具体的实施例中，考虑到签核电子文档发送到签核人后，签核人可能会没注意到，因此为了提醒签核人，该方法还包括：\n\n[0089]基于所述职位信息确定对应所述职位信息的各签核人的联系方式；\n\n[0090]针对各签核人，当签核电子文档停留在签核人的时间超过预设时间阈值，生成提示签核的信息；\n\n[0091]基于所述联系方式将所述信息发送给所述签核人，以提醒所述签核人进行签核。\n\n[0092]在该具体的实施例中，查询对应职位信息的签核人的联系方式，以上述为例，根据需要查询对应总经理，经理，以及部门经理的联系方式，例如已经将签核电子文档发送给部门经理了，但过了很长时间，例如3天，部门经理人就没有进行签核，在此情况下，会基于获取的部门经理的联系方式，生成提示信息，来提醒部门经理及时进行签核。优选的联系方式为手机号，以此提示信息可以为短信。\n\n[0093]实施例2\n\n[0094]本发明实施例2公开了一种发起签核的设备，应用于签核系统中，如图6所示，该设备包括：\n\n[0095]接收模块201，用于接收用户的多组选择指令，其中，各组选择指令中包括用于选择签核人的职位信息的第一选择指令和用于选择签核位置的第二选择指令；其中，各组选择指令在时间上存在先后顺序；\n\n[0096]确定模块202，用于针对各组选择指令，基于所述第一选择指令确定所选择的签核人的职位信息，同时基于所述第二选择指令确定所选择的签核位置；\n\n[0097]设置模块203，用于将所述签核位置设置为所述职位信息对应的签核人的签核位置；\n\n[0098]发送模块204，用于按照所述先后顺序将签核电子文档发送给各所述签核人。\n\n[0099]在一个具体的实施例中，所述签核系统中预设有签核人职位图标，各签核人职位图标与所述签核人的职位信息关联；\n\n[0100]所述接收模块201获取各组选择指令中的第一选择指令，包括：\n\n[0101]所述接收模块202获取各组选择指令中的第一选择指令，是通过以下方式获取的：\n\n[0102]接收用户点击所述签核人职位图标所生成的职位选择信号；其中，所述职位选择信号中包含有所选择签核人的职位信息；\n\n[0103]基于所述职位选择信号生成第一选择指令。\n\n[0104]在一个具体的实施例中，所述签核电子文档预设有多个签核位置；\n\n[0105]所述接收模块201获取各组选择指令中的第二选择指令，包括：\n\n[0106]所述接收模块201接收用户点击所述签核位置所生成的位置选择信号；其中，所述位置选择信息中包含有所选择签核位置的信息；\n\n[0107]基于所述位置选择信号生成第二选择指令。\n\n[0108]在一个具体的实施例中，所述发送模块204，用于：\n\n[0109]基于各组选择指令在时间上的先后顺序确定签核人进行签核的顺序以及当前需要进行签核的签核人，并将所述签核电子文档发送给确定的签核人；\n\n[0110]待当前的签核人签核完成，基于当前的签核人的签核生成新的签核电子文档；\n\n[0111]将新生成的签核电子文档发送给确定的下一位签核人。\n\n[0112]在一个具体的实施例中，如图7所示，该设备还包括：\n\n[0113]提醒模块205，用于基于所述职位信息确定对应所述职位信息的各签核人的联系方式；\n\n[0114]针对各签核人，当签核电子文档停留在签核人的时间超过预设时间阈值，生成提示签核的信息；\n\n[0115]基于所述联系方式将所述信息发送给所述签核人，以提醒所述签核人进行签核。\n\n[0116]与现有技术相比，本发明提出了一种发起签核的方法和设备，应用于签核系统中，其中该方法包括：接收用户的多组选择指令，其中，各组选择指令中包括用于选择签核人的职位信息的第一选择指令和用于选择签核位置的第二选择指令；其中，各组选择指令在时间上存在先后顺序；针对各组选择指令，基于所述第一选择指令确定所选择的签核人的职位信息，同时基于所述第二选择指令确定所选择的签核位置；将所述签核位置设置为所述职位信息对应的签核人的签核位置；按照所述先后顺序将签核电子文档发送给各所述签核人；以此，使得发起签核地过程方便快捷，方便了签核发起用户的操作。\n\n[0117]本领域技术人员可以理解附图只是一个优选实施场景的示意图，附图中的模块或流程并不一定是实施本发明所必须的。\n\n[0118]本领域技术人员可以理解实施场景中的装置中的模块可以按照实施场景描述进行分布于实施场景的装置中，也可以进行相应变化位于不同于本实施场景的一个或多个装置中。上述实施场景的模块可以合并为一个模块，也可以进一步拆分成多个子模块。\n\n[0119]上述本发明序号仅仅为了描述，不代表实施场景的优劣。\n\n[0120]以上公开的仅为本发明的几个具体实施场景，但是，本发明并非局限于此，任何本领域的技术人员能思之的变化都应落入本发明的保护范围。\n\n');
INSERT INTO `os_patent_instruction_text` VALUES (11146, 24084, '技术领域\n\n[0001]本发明涉及电子签批技术领域，具体而言，涉及一种电子签批安全管理方法及系统。\n\n背景技术\n\n[0002]对于公司内部签批流程，通常需要将待签批文件打印出来，然后给到各个签批人处进行签批签字盖章。这样的签批流程较为繁琐，工作效率低下。由此，电子签批应运而生。近年来，电子签批在企业流程、行业应用、移动支付和个人信息安全等各种场景中得到越来越多的应用。\n\n[0003]但现有的电子签批大多通过公共网络传输签批文件，缺乏对传输的签批文件的保护机制。对于企业来说，企业的财政开支状况、项目申请及研发文档等都是非常机密的材料，一些不法的竞争者经常通过技术手段窃取机密，使受害者遭受巨大的经济损失。\n\n发明内容\n\n[0004]本发明正是基于上述问题，提出了一种对签批文件具有保护机制的电子签批方法及系统。\n\n[0005]有鉴于此，本发明一方面提出了一种电子签批安全管理方法，包括：\n\n[0006]响应发起人的电子签批请求，获取所述发起人的级别及所述电子签批的待签核文件；\n\n[0007]比较所述发起人的级别和存储的一预设级别；\n\n[0008]当所述发起人的级别达到所述预设级别时，加密所述待签核文件。\n\n[0009]进一步地，还包括：\n\n[0010]响应发起人的电子签批请求，获取发起人设置的至少一签核人的签核顺序；\n\n[0011]根据所述签核顺序，生成文件传输路径。\n\n[0012]进一步地，还包括：\n\n[0013]当所述发起人的级别均低于所述预设级别时，根据所述文件传输路径建立一常规通道；\n\n[0014]在所述常规通道传输所述待签核文件至签核人端；\n\n[0015]当接收到来自签核人端的已签核文件时，关闭所述常规通道。\n\n[0016]进一步地，所述“加密所述待签核文件”包括：\n\n[0017]根据所述文件传输路径建立一常规通道；\n\n[0018]对所述常规通道进行加密，建立一加密通道；\n\n[0019]在所述加密通道传输所述待签核文件至签核人端；\n\n[0020]当接收到来自签核人端的已签核文件时，关闭所述加密通道。\n\n[0021]进一步地，所述“加密所述待签核文件”包括：\n\n[0022]根据所述文件传输路径建立一常规通道；\n\n[0023]对所述待签核文件加密；\n\n[0024]在所述常规通道传输所述加密的待签核文件至签核人端；\n\n[0025]接收来自签核人端的加密的已签核文件，根据存储的发起人和签核人之间关联的解密密钥，对所述加密的已签核文件解密；\n\n[0026]关闭所述常规通道。\n\n[0027]本发明另一方面还提供了一种电子签批安全管理系统，包括获取单元、存储器、比较单元和处理器。\n\n[0028]所述获取单元，用于响应发起人的电子签批请求，获取所述发起人的级别及所述电子签批的待签核文件。\n\n[0029]所述比较单元，用于比较所述发起人的级别和所述存储器存储的预设级别，生成比较结果。\n\n[0030]所述处理器，用于当所述发起人的级别达到所述预设级别时，加密所述待签核文件。\n\n[0031]进一步地，所述获取单元还用于响应发起人的电子签批请求获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。\n\n[0032]进一步地，还包括传输单元，所述传输单元包括通道建立模块、文件传输模块和通道关闭模块。通道建立模块，用于根据所述文件传输路径建立一常规通道。文件传输模块，用于在所述常规通道发送所述待签核文件至签核人端，及接收来自签核人端的已签核文件。通道关闭模块，用于关闭所述常规通道。\n\n[0033]进一步地，还包括传输单元，所述传输单元包括通道建立模块、加密模块、文件传输模块和通道关闭模块。通道建立模块，用于根据所述文件传输路径建立一常规通道。加密模块，用于对所述常规通道进行加密，建立一加密通道。文件传输模块，用于在所述加密通道发送所述待签核文件至签核人端，及接收来自签核人端的已签核文件。通道关闭模块，用于关闭所述加密通道。\n\n[0034]进一步地，还包括传输单元，所述传输单元包括通道建立模块，加密模块、文件传输模块、解密模块和通道关闭模块。通道建立模块，用于根据所述文件传输路径建立一常规通道。加密模块，用于对所述待签核文件加密。文件传输模块，用于在所述常规通道发送所述加密的待签核文件至签核人端，及接收来自签核人端的加密的已签核文件。解密模块，用于所述存储器存储的发起人和签核人之间关联的解密密钥，对所述加密的已签核文件解密。通道关闭模块，用于关闭所述常规通道。\n\n[0035]本发明实施例提供的电子签批安全管理方法及系统，自动识别电子签批发起人的级别，并根据存储的一预设级别判断该电子签批的重要性，对发起人的级别高于预设级别的电子签批加密传输，从而避免非法分子对重要信息的窃取，对用户造成不必要的损失。\n\n[0036]为使本发明的上述目的、特征和优点能更明显易懂，下文特举较佳实施例，并配合所附附图，作详细说明如下。\n\n附图说明\n\n[0037]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0038]图1示出了本发明实施例提供的一种电子签批安全管理方法的第一流程示意图；\n\n[0039]图2示出了本发明实施例提供的一种电子签批安全管理方法的第二流程示意图；\n\n[0040]图3示出了本发明实施例提供的一种电子签批安全管理系统的结构示意图。\n\n[0041]主要元件符号说明：\n\n[0042]100-电子签批安全管理系统；10-获取单元；20-存储器；30-比较单元；40-传输单元；41-通道建立模块；42-文件传输模块；43-通道关闭模块；44-通道加密模块；45-文件加密模块；46-文件解密模块；50-处理器。\n\n具体实施方式\n\n[0043]为了便于理解本发明，下面将参照相关附图对电子签批安全管理方法及系统进行更清楚、完整地描述。附图中给出了电子签批安全管理方法及系统的优选实施例。电子签批安全管理方法及系统可以通过许多不同的形式来实现，并不限于本文所描述的实施例。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0044]实施例1\n\n[0045]图1示出了本发明实施例提供的一种电子签批安全管理方法的流程示意图。如图1所示，本发明实施例提供的电子签批安全管理方法，包括：\n\n[0046]步骤S10，响应发起人的电子签批请求，获取所述发起人的级别及所述电子签批的待签核文件。\n\n[0047]具体地，响应发起人在用户终端的电子签批请求，获取发起所述电子签批的发起人的级别。所述用户终端可以是手机、电脑等。在注册账户后，用户可以通过安装在用户终端的电子签批软件或用户终端浏览器中的电子签批网页完成电子签批流程。根据发起人的职位级别等，可以设置所述电子签批为不同级别，如发起人为董事长，则所述发起人的级别为董事长。\n\n[0048]进一步地，响应发起人在用户终端的电子签批请求，获取发起人通过移动网络或无线网络上传的待签核文件。所述待签核文件是指合同、请假条、样品申请等需要至少一签核人签字的文件。\n\n[0049]进一步地，响应发起人的电子签批请求，获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。根据获取的签核顺序，生成对应的文件传输路径。所述文件传输路径是指待签核文件在不同传输节点间的流转路径。例如，一电子签批的签核顺序为物料部经理、财务部经理、研发部经理，则对应的文件传输路径为发起人端、物料部经理端、品质部经理端、研发部经理端、发起人端。\n\n[0050]步骤S20，比较所述发起人的级别和存储的一预设级别。\n\n[0051]具体地，获取服务器端存储的至少一预设级别。所述预设级别为区分待签核文件重要性的标准，如所述预设级别为A级经理。比较发起该电子签批的发起人的级别和该预设级别，生成比较结果。当所述发起人的级别均低于所述预设级别时，表示待签核文件重要性弱，对保密工作不做要求等；但当所述发起人的级别高于所述预设级别时，表示待签核文件重要性强，需要保密签核等，如当所述发起人的级别为董事长，预设级别为A级经理时，董事长级别高于A级经理级别，则表示待签核需保密签核。\n\n[0052]步骤S30，当所述发起人的级别达到所述预设级别时，加密所述待签核文件。\n\n[0053]具体地，当所述比较结果为所述发起人的级别均低于所述预设级别时，常规传输所述待签核文件。根据所述文件传输路径建立一常规通道。所述常规通道为不做加密、加扰等预处理的信号传输通道。根据发起人设置的签核顺序在常规通道传输待签核文件至每一签核人端。优选地，当接收到来自最后一签核人完成签批的已签核文件时，关闭所述常规通道，从而节约网络资源。\n\n[0054]进一步地，当所述比较结果为所述发起人的级别达到所述预设级别时，加密传输所述待签核文件。具体地，根据所述文件传输路径建立一常规通道。根据HTTPS协议(HyperText Transfer Protocol over Secure Socket Layer，基于SSL的超文本传输协议)、SSL协议(Secure Sockets Layer，安全套接层)、CA认证(Certificate Authority，认证授权)、VPN(Virtual Private Network，虚拟专用网)或RAR压缩加密等加密方式对所述常规通道加密，从而建立一加密通道。根据发起人设置的签核顺序在加密通道传输待签核文件至每一签核人端。优选地，当接收到来自最后一签核人完成签批的已签核文件时，关闭所述加密通道，从而节约网络资源。\n\n[0055]实施例2\n\n[0056]图2示出了本发明实施例提供的一种电子签批安全管理方法的流程示意图。如图2所示，本发明实施例提供的电子签批安全管理方法，包括：\n\n[0057]步骤S1，响应发起人的电子签批请求，获取所述发起人的级别及所述电子签批的待签核文件。\n\n[0058]具体地，响应发起人在用户终端的电子签批请求，获取发起所述电子签批的发起人的级别以及发起人通过移动网络或无线网络上传的待签核文件。所述用户终端可以是手机、电脑等。在注册账户后，用户可以通过安装在用户终端的电子签批软件或用户终端浏览器中的电子签批网页完成电子签批流程。\n\n[0059]步骤S2，响应发起人的电子签批请求，获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。\n\n[0060]需要说明的是，步骤S1和步骤S2的执行不分先后顺序。\n\n[0061]具体地，响应发起人的电子签批请求，获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。根据获取的签核顺序，生成对应的文件传输路径。\n\n[0062]步骤S3，比较所述发起人的级别和存储的一预设级别，当所述发起人的级别均低于所述预设级别时，执行步骤S4；当所述发起人的级别达到所述预设级别时，执行步骤S5。\n\n[0063]具体地，获取服务器端存储的至少一预设级别。所述预设级别为区分待签核文件重要性的标准。比较所述发起人的级别和该预设级别。当所述发起人的级别均低于所述预设级别时，表示待签核文件重要性弱，对保密工作不做要求等，执行步骤S4；当所述发起人的级别达到所述预设级别时，表示待签核文件重要性强，需要保密签核等，执行步骤S5。\n\n[0064]步骤S4，常规传输所述待签核文件。\n\n[0065]具体地，当所述发起人的级别均低于所述预设级别时，常规传输所述待签核文件。根据所述文件传输路径建立一常规通道。根据发起人设置的签核顺序在常规通道传输待签核文件至每一签核人端。优选地，当接收到来自最后一签核人完成签批的已签核文件时，关闭所述常规通道，从而节约网络资源。\n\n[0066]步骤S5，加密传输所述待签核文件。\n\n[0067]具体地，当所述发起人的级别达到所述预设级别时，加密传输所述待签核文件。本实施例中，加密传输所述待签核文件包括两种实施方式。一种实施方式为建立一加密通道，及在该加密通道传输所述待签核文件。具体地，根据所述文件传输路径建立一常规通道。根据HTTPS协议、SSL协议、CA认证、VPN或RAR压缩加密等加密方式对所述常规通道加密，从而建立一加密通道。根据发起人设置的签核顺序在加密通道传输待签核文件至每一签核人端。优选地，当接收到来自最后一签核人完成签批的已签核文件时，关闭所述加密通道，从而节约网络资源。\n\n[0068]另一种实施方式为建立一常规通道，对所述待签核文件加密，及在所述常规通道传输所述加密的待签核文件。具体地，根据所述文件传输路径建立一常规通道。根据SSH协议(SecureShell，安全外壳协议)、PGP协议(Pretty Good Privacy，安全加密)、RSA(非对称加密算法)或用户口令加密等加密方式对所述待签核文件加密。根据发起人设置的签核顺序在常规通道传输待签核文件至每一签核人端。当接收到来自最后一签核人完成签批的加密的已签核文件时，根据存储的解密密钥，对所述加密的已签核文件解密。所述解密密钥可以是发起人和签核人之间预约定的口令、密码等。优选地，当接收到来自最后一签核人完成签批的加密的已签核文件时，关闭所述常规通道，从而节约网络资源。这种方式对传输通道要求比较低，且文件加密技术相比通道加密技术更容易实现。\n\n[0069]实施例3\n\n[0070]图3示出了本发明实施例提供的一种电子签批安全管理系统的结构示意图。如图3所示，本发明实施例提供的一种电子签批安全管理系统100，包括获取单元10、存储器20、比较单元30、传输单元40和处理器50。获取单元10、存储器20、比较单元30和传输单元40均与处理器50通信连接。\n\n[0071]获取单元10用于响应发起人的电子签批请求，获取所述发起人的级别及所述电子签批的待签核文件，获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。\n\n[0072]具体地，处理器50控制获取单元10响应发起人的电子签批请求，获取发起所述电子签批的发起人的级别。同时，处理器50控制获取单元10获取发起人通过移动网络或无线网络上传的待签核文件。所述待签核文件是指合同、请假条、样品申请等需要至少一签核人签字的文件。进一步地，在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。处理器50控制获取单元10获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。所述文件传输路径是指待签核文件在不同传输节点间的流转路径。\n\n[0073]存储器20用于存储一预设级别。所述预设级别为区分待签核文件重要性的标准，如所述预设级别为A级经理。\n\n[0074]比较单元30用于比较电子签批的至少一签核人的最高级别和所述预设级别，生成比较结果。\n\n[0075]传输单元40用于传输所述待签核文件。\n\n[0076]本实施例中，传输单元40包括通道建立模块41、文件传输模块42和通道关闭模块43。通道建立模块41用于根据所述文件传输路径建立一常规通道。文件传输模块42用于在所述常规通道发送所述待签核文件至签核人端，及接收来自签核人端的已签核文件。通道关闭模块43用于关闭所述常规通道。\n\n[0077]进一步地，本实施例中，传输单元40还包括通道加密模块44。通道加密模块44用于对所述常规通道进行加密及安全认证，建立一加密通道。文件传输模块42还用于在所述加密通道发送所述待签核文件至签核人端，及接收来自签核人端的已签核文件。通道关闭模块43还用于关闭所述加密通道。\n\n[0078]处理器50用于根据所述比较结果控制传输单元40加密传输或常规传输所述待签核文件。\n\n[0079]当比较单元30生成的比较结果为发起所述电子签批的发起人的级别均低于存储器20存储的预设级别时，处理器50控制传输单元40常规传输所述待签核文件。具体地，处理器50控制通道建立模块41根据所述文件传输路径建立一常规通道，及控制文件传输模块42根据发起人设置的签核顺序在常规通道传输待签核文件至每一签核人端。优选地，当文件传输模块42接收到来自最后一签核人完成签批的已签核文件时，处理器50控制通道关闭模块43关闭所述常规通道，从而节约网络资源。\n\n[0080]当比较单元30生成的比较结果为所述发起人的级别达到存储器20存储的预设级别时，处理器50控制传输单元40加密传输所述待签核文件。具体地，处理器50控制通道建立模块41根据所述文件传输路径建立一常规通道，及控制通道加密模块44根据HTTPS协议、SSL协议、CA认证、VPN或RAR压缩加密等加密方式对所述常规通道加密，从而建立一加密通道。处理器50控制文件传输模块42根据发起人设置的签核顺序在加密通道传输待签核文件至每一签核人端。优选地，当文件传输模块42接收到来自最后一签核人完成签批的已签核文件时，处理器50控制通道关闭模块43关闭所述加密通道，从而节约网络资源。\n\n[0081]另一实施例中，传输单元40还包括文件加密模块45和文件解密模块46。文件加密模块45用于对所述待签核文件加密。文件传输模块42还用于在所述常规通道发送所述加密的待签核文件至签核人端，及接收来自签核人端的加密的已签核文件。文件解密模块46用于存储器20存储的发起人和签核人之间关联的解密密钥，对所述加密的已签核文件解密。\n\n[0082]相应地，当比较单元30生成的比较结果为所述发起人的级别达到存储器20存储的预设级别时，处理器50控制传输单元40加密传输所述待签核文件。具体地，处理器50控制通道建立模块41根据所述文件传输路径建立一常规通道，及控制文件加密模块45根据SSH协议、PGP机制、RSA算法或用户口令加密等加密方式对所述待签核文件加密。处理器50控制文件传输模块42根据发起人设置的签核顺序在常规通道传输待签核文件至每一签核人端。当文件传输模块42接收到来自最后一签核人完成签批的加密的已签核文件时，处理器50控制文件解密模块46根据存储器20存储的解密密钥，对所述加密的已签核文件解密。所述解密密钥可以是发起人和签核人之间预先约定的口令、密码等。优选地，当文件传输模块42接收到来自最后一签核人完成签批的加密的已签核文件时，处理器50控制通道关闭模块43关闭所述常规通道，从而节约网络资源。\n\n[0083]本发明实施例提供的电子签批安全管理方法及系统，自动识别电子签批的发起人的级别，并根据存储的一预设级别判断该电子签批的重要性，对发起人的级别高于预设级别的电子签批加密传输，从而避免非法分子对重要信息的窃取，对用户造成不必要的损失。\n\n[0084]本发明实施例所提供的系统，其实现原理及产生的技术效果和前述方法实施例相同，为简要描述，系统实施例部分未提及之处，可参考前述方法实施例中相应内容。\n\n[0085]在这里示出和描述的所有示例中，任何具体值应被解释为仅仅是示例性的，而不是为限制，因此，示例性实施例的其他示例可以具有不同的值。应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。\n\n[0086]在本申请所提供的几个实施例中，应该理解到，所揭露的装置可以通过其它的方式实现。以上所描述的装置实施例仅仅是示意性的，例如，所述单元的划分，仅仅为一种逻辑功能划分，实际实现时可以有另外的划分方式，又例如，多个单元或组件可以结合或者可以集成到另一个系统，或一些特征可以忽略，或不执行。另一点，所显示或讨论的相互之间的耦合或直接耦合或通信连接可以是通过一些通信接口，装置或单元的间接耦合或通信连接，可以是电性，机械或其它的形式。\n\n[0087]所述为分离部件说明的单元可以是或者也可以不是物理上分开的，为单元显示的部件可以是或者也可以不是物理单元，即可以位于一个地方，或者也可以分布到多个网络单元上。可以根据实际的需要选择其中的部分或者全部单元来实现本实施例方案的目的。\n\n[0088]另外，在本发明各个实施例中的各功能单元可以集成在一个处理单元中，也可以是各个单元单独物理存在，也可以两个或两个以上单元集成在一个单元中。\n\n[0089]以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应所述以权利要求的保护范围为准。\n\n', '技术领域\n\n[0001]本发明涉及电子签批技术领域，具体而言，涉及一种电子签批安全管理方法及系统。\n\n背景技术\n\n[0002]对于公司内部签批流程，通常需要将待签批文件打印出来，然后给到各个签批人处进行签批签字盖章。这样的签批流程较为繁琐，工作效率低下。由此，电子签批应运而生。近年来，电子签批在企业流程、行业应用、移动支付和个人信息安全等各种场景中得到越来越多的应用。\n\n[0003]但现有的电子签批大多通过公共网络传输签批文件，缺乏对传输的签批文件的保护机制。对于企业来说，企业的财政开支状况、项目申请及研发文档等都是非常机密的材料，一些不法的竞争者经常通过技术手段窃取机密，使受害者遭受巨大的经济损失。\n\n发明内容\n\n[0004]本发明正是基于上述问题，提出了一种对签批文件具有保护机制的电子签批方法及系统。\n\n[0005]有鉴于此，本发明一方面提出了一种电子签批安全管理方法，包括：\n\n[0006]响应发起人的电子签批请求，获取所述发起人的级别及所述电子签批的待签核文件；\n\n[0007]比较所述发起人的级别和存储的一预设级别；\n\n[0008]当所述发起人的级别达到所述预设级别时，加密所述待签核文件。\n\n[0009]进一步地，还包括：\n\n[0010]响应发起人的电子签批请求，获取发起人设置的至少一签核人的签核顺序；\n\n[0011]根据所述签核顺序，生成文件传输路径。\n\n[0012]进一步地，还包括：\n\n[0013]当所述发起人的级别均低于所述预设级别时，根据所述文件传输路径建立一常规通道；\n\n[0014]在所述常规通道传输所述待签核文件至签核人端；\n\n[0015]当接收到来自签核人端的已签核文件时，关闭所述常规通道。\n\n[0016]进一步地，所述“加密所述待签核文件”包括：\n\n[0017]根据所述文件传输路径建立一常规通道；\n\n[0018]对所述常规通道进行加密，建立一加密通道；\n\n[0019]在所述加密通道传输所述待签核文件至签核人端；\n\n[0020]当接收到来自签核人端的已签核文件时，关闭所述加密通道。\n\n[0021]进一步地，所述“加密所述待签核文件”包括：\n\n[0022]根据所述文件传输路径建立一常规通道；\n\n[0023]对所述待签核文件加密；\n\n[0024]在所述常规通道传输所述加密的待签核文件至签核人端；\n\n[0025]接收来自签核人端的加密的已签核文件，根据存储的发起人和签核人之间关联的解密密钥，对所述加密的已签核文件解密；\n\n[0026]关闭所述常规通道。\n\n[0027]本发明另一方面还提供了一种电子签批安全管理系统，包括获取单元、存储器、比较单元和处理器。\n\n[0028]所述获取单元，用于响应发起人的电子签批请求，获取所述发起人的级别及所述电子签批的待签核文件。\n\n[0029]所述比较单元，用于比较所述发起人的级别和所述存储器存储的预设级别，生成比较结果。\n\n[0030]所述处理器，用于当所述发起人的级别达到所述预设级别时，加密所述待签核文件。\n\n[0031]进一步地，所述获取单元还用于响应发起人的电子签批请求获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。\n\n[0032]进一步地，还包括传输单元，所述传输单元包括通道建立模块、文件传输模块和通道关闭模块。通道建立模块，用于根据所述文件传输路径建立一常规通道。文件传输模块，用于在所述常规通道发送所述待签核文件至签核人端，及接收来自签核人端的已签核文件。通道关闭模块，用于关闭所述常规通道。\n\n[0033]进一步地，还包括传输单元，所述传输单元包括通道建立模块、加密模块、文件传输模块和通道关闭模块。通道建立模块，用于根据所述文件传输路径建立一常规通道。加密模块，用于对所述常规通道进行加密，建立一加密通道。文件传输模块，用于在所述加密通道发送所述待签核文件至签核人端，及接收来自签核人端的已签核文件。通道关闭模块，用于关闭所述加密通道。\n\n[0034]进一步地，还包括传输单元，所述传输单元包括通道建立模块，加密模块、文件传输模块、解密模块和通道关闭模块。通道建立模块，用于根据所述文件传输路径建立一常规通道。加密模块，用于对所述待签核文件加密。文件传输模块，用于在所述常规通道发送所述加密的待签核文件至签核人端，及接收来自签核人端的加密的已签核文件。解密模块，用于所述存储器存储的发起人和签核人之间关联的解密密钥，对所述加密的已签核文件解密。通道关闭模块，用于关闭所述常规通道。\n\n[0035]本发明实施例提供的电子签批安全管理方法及系统，自动识别电子签批发起人的级别，并根据存储的一预设级别判断该电子签批的重要性，对发起人的级别高于预设级别的电子签批加密传输，从而避免非法分子对重要信息的窃取，对用户造成不必要的损失。\n\n[0036]为使本发明的上述目的、特征和优点能更明显易懂，下文特举较佳实施例，并配合所附附图，作详细说明如下。\n\n附图说明\n\n[0037]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0038]图1示出了本发明实施例提供的一种电子签批安全管理方法的第一流程示意图；\n\n[0039]图2示出了本发明实施例提供的一种电子签批安全管理方法的第二流程示意图；\n\n[0040]图3示出了本发明实施例提供的一种电子签批安全管理系统的结构示意图。\n\n[0041]主要元件符号说明：\n\n[0042]100-电子签批安全管理系统；10-获取单元；20-存储器；30-比较单元；40-传输单元；41-通道建立模块；42-文件传输模块；43-通道关闭模块；44-通道加密模块；45-文件加密模块；46-文件解密模块；50-处理器。\n\n具体实施方式\n\n[0043]为了便于理解本发明，下面将参照相关附图对电子签批安全管理方法及系统进行更清楚、完整地描述。附图中给出了电子签批安全管理方法及系统的优选实施例。电子签批安全管理方法及系统可以通过许多不同的形式来实现，并不限于本文所描述的实施例。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0044]实施例1\n\n[0045]图1示出了本发明实施例提供的一种电子签批安全管理方法的流程示意图。如图1所示，本发明实施例提供的电子签批安全管理方法，包括：\n\n[0046]步骤S10，响应发起人的电子签批请求，获取所述发起人的级别及所述电子签批的待签核文件。\n\n[0047]具体地，响应发起人在用户终端的电子签批请求，获取发起所述电子签批的发起人的级别。所述用户终端可以是手机、电脑等。在注册账户后，用户可以通过安装在用户终端的电子签批软件或用户终端浏览器中的电子签批网页完成电子签批流程。根据发起人的职位级别等，可以设置所述电子签批为不同级别，如发起人为董事长，则所述发起人的级别为董事长。\n\n[0048]进一步地，响应发起人在用户终端的电子签批请求，获取发起人通过移动网络或无线网络上传的待签核文件。所述待签核文件是指合同、请假条、样品申请等需要至少一签核人签字的文件。\n\n[0049]进一步地，响应发起人的电子签批请求，获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。根据获取的签核顺序，生成对应的文件传输路径。所述文件传输路径是指待签核文件在不同传输节点间的流转路径。例如，一电子签批的签核顺序为物料部经理、财务部经理、研发部经理，则对应的文件传输路径为发起人端、物料部经理端、品质部经理端、研发部经理端、发起人端。\n\n[0050]步骤S20，比较所述发起人的级别和存储的一预设级别。\n\n[0051]具体地，获取服务器端存储的至少一预设级别。所述预设级别为区分待签核文件重要性的标准，如所述预设级别为A级经理。比较发起该电子签批的发起人的级别和该预设级别，生成比较结果。当所述发起人的级别均低于所述预设级别时，表示待签核文件重要性弱，对保密工作不做要求等；但当所述发起人的级别高于所述预设级别时，表示待签核文件重要性强，需要保密签核等，如当所述发起人的级别为董事长，预设级别为A级经理时，董事长级别高于A级经理级别，则表示待签核需保密签核。\n\n[0052]步骤S30，当所述发起人的级别达到所述预设级别时，加密所述待签核文件。\n\n[0053]具体地，当所述比较结果为所述发起人的级别均低于所述预设级别时，常规传输所述待签核文件。根据所述文件传输路径建立一常规通道。所述常规通道为不做加密、加扰等预处理的信号传输通道。根据发起人设置的签核顺序在常规通道传输待签核文件至每一签核人端。优选地，当接收到来自最后一签核人完成签批的已签核文件时，关闭所述常规通道，从而节约网络资源。\n\n[0054]进一步地，当所述比较结果为所述发起人的级别达到所述预设级别时，加密传输所述待签核文件。具体地，根据所述文件传输路径建立一常规通道。根据HTTPS协议(HyperText Transfer Protocol over Secure Socket Layer，基于SSL的超文本传输协议)、SSL协议(Secure Sockets Layer，安全套接层)、CA认证(Certificate Authority，认证授权)、VPN(Virtual Private Network，虚拟专用网)或RAR压缩加密等加密方式对所述常规通道加密，从而建立一加密通道。根据发起人设置的签核顺序在加密通道传输待签核文件至每一签核人端。优选地，当接收到来自最后一签核人完成签批的已签核文件时，关闭所述加密通道，从而节约网络资源。\n\n[0055]实施例2\n\n[0056]图2示出了本发明实施例提供的一种电子签批安全管理方法的流程示意图。如图2所示，本发明实施例提供的电子签批安全管理方法，包括：\n\n[0057]步骤S1，响应发起人的电子签批请求，获取所述发起人的级别及所述电子签批的待签核文件。\n\n[0058]具体地，响应发起人在用户终端的电子签批请求，获取发起所述电子签批的发起人的级别以及发起人通过移动网络或无线网络上传的待签核文件。所述用户终端可以是手机、电脑等。在注册账户后，用户可以通过安装在用户终端的电子签批软件或用户终端浏览器中的电子签批网页完成电子签批流程。\n\n[0059]步骤S2，响应发起人的电子签批请求，获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。\n\n[0060]需要说明的是，步骤S1和步骤S2的执行不分先后顺序。\n\n[0061]具体地，响应发起人的电子签批请求，获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。根据获取的签核顺序，生成对应的文件传输路径。\n\n[0062]步骤S3，比较所述发起人的级别和存储的一预设级别，当所述发起人的级别均低于所述预设级别时，执行步骤S4；当所述发起人的级别达到所述预设级别时，执行步骤S5。\n\n[0063]具体地，获取服务器端存储的至少一预设级别。所述预设级别为区分待签核文件重要性的标准。比较所述发起人的级别和该预设级别。当所述发起人的级别均低于所述预设级别时，表示待签核文件重要性弱，对保密工作不做要求等，执行步骤S4；当所述发起人的级别达到所述预设级别时，表示待签核文件重要性强，需要保密签核等，执行步骤S5。\n\n[0064]步骤S4，常规传输所述待签核文件。\n\n[0065]具体地，当所述发起人的级别均低于所述预设级别时，常规传输所述待签核文件。根据所述文件传输路径建立一常规通道。根据发起人设置的签核顺序在常规通道传输待签核文件至每一签核人端。优选地，当接收到来自最后一签核人完成签批的已签核文件时，关闭所述常规通道，从而节约网络资源。\n\n[0066]步骤S5，加密传输所述待签核文件。\n\n[0067]具体地，当所述发起人的级别达到所述预设级别时，加密传输所述待签核文件。本实施例中，加密传输所述待签核文件包括两种实施方式。一种实施方式为建立一加密通道，及在该加密通道传输所述待签核文件。具体地，根据所述文件传输路径建立一常规通道。根据HTTPS协议、SSL协议、CA认证、VPN或RAR压缩加密等加密方式对所述常规通道加密，从而建立一加密通道。根据发起人设置的签核顺序在加密通道传输待签核文件至每一签核人端。优选地，当接收到来自最后一签核人完成签批的已签核文件时，关闭所述加密通道，从而节约网络资源。\n\n[0068]另一种实施方式为建立一常规通道，对所述待签核文件加密，及在所述常规通道传输所述加密的待签核文件。具体地，根据所述文件传输路径建立一常规通道。根据SSH协议(SecureShell，安全外壳协议)、PGP协议(Pretty Good Privacy，安全加密)、RSA(非对称加密算法)或用户口令加密等加密方式对所述待签核文件加密。根据发起人设置的签核顺序在常规通道传输待签核文件至每一签核人端。当接收到来自最后一签核人完成签批的加密的已签核文件时，根据存储的解密密钥，对所述加密的已签核文件解密。所述解密密钥可以是发起人和签核人之间预约定的口令、密码等。优选地，当接收到来自最后一签核人完成签批的加密的已签核文件时，关闭所述常规通道，从而节约网络资源。这种方式对传输通道要求比较低，且文件加密技术相比通道加密技术更容易实现。\n\n[0069]实施例3\n\n[0070]图3示出了本发明实施例提供的一种电子签批安全管理系统的结构示意图。如图3所示，本发明实施例提供的一种电子签批安全管理系统100，包括获取单元10、存储器20、比较单元30、传输单元40和处理器50。获取单元10、存储器20、比较单元30和传输单元40均与处理器50通信连接。\n\n[0071]获取单元10用于响应发起人的电子签批请求，获取所述发起人的级别及所述电子签批的待签核文件，获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。\n\n[0072]具体地，处理器50控制获取单元10响应发起人的电子签批请求，获取发起所述电子签批的发起人的级别。同时，处理器50控制获取单元10获取发起人通过移动网络或无线网络上传的待签核文件。所述待签核文件是指合同、请假条、样品申请等需要至少一签核人签字的文件。进一步地，在某些情况下，发起人发起的一电子签批同时需要多个签核人签字，则发起人需根据公司的签核流程，或签核人的职位、部门等设置签核人的签核顺序。处理器50控制获取单元10获取发起人设置的至少一签核人的签核顺序，及根据所述签核顺序生成文件传输路径。所述文件传输路径是指待签核文件在不同传输节点间的流转路径。\n\n[0073]存储器20用于存储一预设级别。所述预设级别为区分待签核文件重要性的标准，如所述预设级别为A级经理。\n\n[0074]比较单元30用于比较电子签批的至少一签核人的最高级别和所述预设级别，生成比较结果。\n\n[0075]传输单元40用于传输所述待签核文件。\n\n[0076]本实施例中，传输单元40包括通道建立模块41、文件传输模块42和通道关闭模块43。通道建立模块41用于根据所述文件传输路径建立一常规通道。文件传输模块42用于在所述常规通道发送所述待签核文件至签核人端，及接收来自签核人端的已签核文件。通道关闭模块43用于关闭所述常规通道。\n\n[0077]进一步地，本实施例中，传输单元40还包括通道加密模块44。通道加密模块44用于对所述常规通道进行加密及安全认证，建立一加密通道。文件传输模块42还用于在所述加密通道发送所述待签核文件至签核人端，及接收来自签核人端的已签核文件。通道关闭模块43还用于关闭所述加密通道。\n\n[0078]处理器50用于根据所述比较结果控制传输单元40加密传输或常规传输所述待签核文件。\n\n[0079]当比较单元30生成的比较结果为发起所述电子签批的发起人的级别均低于存储器20存储的预设级别时，处理器50控制传输单元40常规传输所述待签核文件。具体地，处理器50控制通道建立模块41根据所述文件传输路径建立一常规通道，及控制文件传输模块42根据发起人设置的签核顺序在常规通道传输待签核文件至每一签核人端。优选地，当文件传输模块42接收到来自最后一签核人完成签批的已签核文件时，处理器50控制通道关闭模块43关闭所述常规通道，从而节约网络资源。\n\n[0080]当比较单元30生成的比较结果为所述发起人的级别达到存储器20存储的预设级别时，处理器50控制传输单元40加密传输所述待签核文件。具体地，处理器50控制通道建立模块41根据所述文件传输路径建立一常规通道，及控制通道加密模块44根据HTTPS协议、SSL协议、CA认证、VPN或RAR压缩加密等加密方式对所述常规通道加密，从而建立一加密通道。处理器50控制文件传输模块42根据发起人设置的签核顺序在加密通道传输待签核文件至每一签核人端。优选地，当文件传输模块42接收到来自最后一签核人完成签批的已签核文件时，处理器50控制通道关闭模块43关闭所述加密通道，从而节约网络资源。\n\n[0081]另一实施例中，传输单元40还包括文件加密模块45和文件解密模块46。文件加密模块45用于对所述待签核文件加密。文件传输模块42还用于在所述常规通道发送所述加密的待签核文件至签核人端，及接收来自签核人端的加密的已签核文件。文件解密模块46用于存储器20存储的发起人和签核人之间关联的解密密钥，对所述加密的已签核文件解密。\n\n[0082]相应地，当比较单元30生成的比较结果为所述发起人的级别达到存储器20存储的预设级别时，处理器50控制传输单元40加密传输所述待签核文件。具体地，处理器50控制通道建立模块41根据所述文件传输路径建立一常规通道，及控制文件加密模块45根据SSH协议、PGP机制、RSA算法或用户口令加密等加密方式对所述待签核文件加密。处理器50控制文件传输模块42根据发起人设置的签核顺序在常规通道传输待签核文件至每一签核人端。当文件传输模块42接收到来自最后一签核人完成签批的加密的已签核文件时，处理器50控制文件解密模块46根据存储器20存储的解密密钥，对所述加密的已签核文件解密。所述解密密钥可以是发起人和签核人之间预先约定的口令、密码等。优选地，当文件传输模块42接收到来自最后一签核人完成签批的加密的已签核文件时，处理器50控制通道关闭模块43关闭所述常规通道，从而节约网络资源。\n\n[0083]本发明实施例提供的电子签批安全管理方法及系统，自动识别电子签批的发起人的级别，并根据存储的一预设级别判断该电子签批的重要性，对发起人的级别高于预设级别的电子签批加密传输，从而避免非法分子对重要信息的窃取，对用户造成不必要的损失。\n\n[0084]本发明实施例所提供的系统，其实现原理及产生的技术效果和前述方法实施例相同，为简要描述，系统实施例部分未提及之处，可参考前述方法实施例中相应内容。\n\n[0085]在这里示出和描述的所有示例中，任何具体值应被解释为仅仅是示例性的，而不是为限制，因此，示例性实施例的其他示例可以具有不同的值。应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。\n\n[0086]在本申请所提供的几个实施例中，应该理解到，所揭露的装置可以通过其它的方式实现。以上所描述的装置实施例仅仅是示意性的，例如，所述单元的划分，仅仅为一种逻辑功能划分，实际实现时可以有另外的划分方式，又例如，多个单元或组件可以结合或者可以集成到另一个系统，或一些特征可以忽略，或不执行。另一点，所显示或讨论的相互之间的耦合或直接耦合或通信连接可以是通过一些通信接口，装置或单元的间接耦合或通信连接，可以是电性，机械或其它的形式。\n\n[0087]所述为分离部件说明的单元可以是或者也可以不是物理上分开的，为单元显示的部件可以是或者也可以不是物理单元，即可以位于一个地方，或者也可以分布到多个网络单元上。可以根据实际的需要选择其中的部分或者全部单元来实现本实施例方案的目的。\n\n[0088]另外，在本发明各个实施例中的各功能单元可以集成在一个处理单元中，也可以是各个单元单独物理存在，也可以两个或两个以上单元集成在一个单元中。\n\n[0089]以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应所述以权利要求的保护范围为准。\n\n');
INSERT INTO `os_patent_instruction_text` VALUES (11147, 24085, '技术领域\n\n[0001]本发明涉及网络技术领域，特别涉及一种签核发起用户管理方法和设备。\n\n背景技术\n\n[0002]在现有技术中，文件的签核一般是人工来进行的，在具体的过程中，需要将相应的文件打印出来，并以人工的方式传递给各个需要签核的签核人处，操作流程繁琐，费时费力，效率低下；且当某位签核人不在的时候，就会耽搁整个流程的正常进行。\n\n[0003]为此，目前有提到有一种电子签核的方式，但这种方式安全性不高，影响用户的体验。\n\n发明内容\n\n[0004]针对现有技术中的缺陷，本发明提出了一种签核发起用户管理方法和设备，用以克服现有技术中的缺陷，提高电子签核的安全性，保障用户的体验。\n\n[0005]具体的，本发明提出了以下具体的实施例：\n\n[0006]本发明实施例提出了一种签核发起用户管理方法，应用于电子签核过程，包括：\n\n[0007]当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常；\n\n[0008]若判断结果为是，判断所述签核发起用户的网络行为是否存在风险；\n\n[0009]若判断结果为是，禁止所述签核发起用户在登录后发起任何操作。\n\n[0010]进一步的，在一个具体的实施例中，所述“判断所述签核发起用户的网络行为是否存在风险”，包括：\n\n[0011]获取所述签核发起用户在预设时间段内的网络行为；\n\n[0012]针对各个网络行为，评估各个网络行为所对应的风险值；\n\n[0013]综合所有风险值，确定总风险值；\n\n[0014]若总风险值大于预设风险阈值，判断所述签核发起用户的网络行为存在风险；\n\n[0015]若总风险值小于预设风险阈值，判断所述签核发起用户的网络行为不存在风险。\n\n[0016]进一步的，在一个具体的实施例中，所述“禁止所述签核发起用户在登录后发起任何操作”，包括：\n\n[0017]获取所述签核发起用户发送的登录请求中的账户信息；\n\n[0018]将所述账户信息中的账户加入操作黑名单中。\n\n[0019]进一步的，在一个具体的实施例中，所述登录环境具体包括登录IP；\n\n[0020]所述“当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常”，包括：\n\n[0021]当接收到签核发起用户的登录请求时，获取签核发起用户的登录IP；\n\n[0022]基于所述登录IP与预设的异常IP数据库中的IP确定所述登录IP的风险值；\n\n[0023]若风险值超过预设的风险阈值，确定所述登录环境异常；\n\n[0024]若风险值低过预设的风险阈值，确定所述登录环境不异常。\n\n[0025]进一步的，在一个具体的实施例中，所述登录环境具体包括登录终端；\n\n[0026]所述“当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常”，包括：\n\n[0027]获取所述签核发起用户发送登录请求的终端的终端信息；\n\n[0028]判断所述终端信息是否存在于预先存储的已验证终端信息数据库中；\n\n[0029]若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0030]若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0031]本发明实施例还提出了一种签核发起用户管理设备，应用于电子签核过程，包括：\n\n[0032]第一判断模块，用于当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常；\n\n[0033]第二判断模块，用于当第一判断模块的判断结果为是时，判断所述签核发起用户的网络行为是否存在风险；\n\n[0034]处理模块，用于当第二判断模块的判断结果为是时，禁止所述签核发起用户在登录后发起任何操作。\n\n[0035]进一步的，在一个具体的实施例中，所述第二判断模块，用于：\n\n[0036]获取所述签核发起用户在预设时间段内的网络行为；\n\n[0037]针对各个网络行为，评估各个网络行为所对应的风险值；\n\n[0038]综合所有风险值，确定总风险值；\n\n[0039]若总风险值大于预设风险阈值，判断所述签核发起用户的网络行为存在风险；\n\n[0040]若总风险值小于预设风险阈值，判断所述签核发起用户的网络行为不存在风险。\n\n[0041]进一步的，在一个具体的实施例中，所述处理模块，用于：\n\n[0042]获取所述签核发起用户发送的登录请求中的账户信息；\n\n[0043]将所述账户信息中的账户加入操作黑名单中。\n\n[0044]进一步的，在一个具体的实施例中，所述登录环境具体包括登录IP；\n\n[0045]所述第一判断模块，用于：\n\n[0046]当接收到签核发起用户的登录请求时，获取签核发起用户的登录IP；\n\n[0047]基于所述登录IP与预设的异常IP数据库中的IP确定所述登录IP的风险值；\n\n[0048]若风险值超过预设的风险阈值，确定所述登录环境异常；\n\n[0049]若风险值低过预设的风险阈值，确定所述登录环境不异常。\n\n[0050]进一步的，在一个具体的实施例中，所述登录环境具体包括登录终端；\n\n[0051]所述第一判断模块，用于：\n\n[0052]获取所述签核发起用户发送登录请求的终端的终端信息；\n\n[0053]判断所述终端信息是否存在于预先存储的已验证终端信息数据库中；\n\n[0054]若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0055]若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0056]与现有技术相比，本发明实施例提出了一种签核发起用户管理方法和设备，应用于电子签核过程，其中，该签核发起用户管理方法包括：当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常；若判断结果为是，判断所述签核发起用户的网络行为是否存在风险；若判断结果为是，禁止所述签核发起用户在登录后发起任何操作。以此，通过上述方法，提高了电子签核过程的安全性，保障了用户的使用体验。\n\n附图说明\n\n[0057]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0058]图1为本发明实施例提出的一种签核发起用户管理方法流程示意图；\n\n[0059]图2为本发明实施例提出的一种对登录环境是否异常进行评估的方法流程示意图；\n\n[0060]图3为本发明实施例提出的一种对登录环境是否异常进行评估的方法流程示意图；\n\n[0061]图4为本发明实施例提出的对签核发起用户的网络行为是否存在风险进行评估的方法流程示意图；\n\n[0062]图5为本发明实施例提出的一种签核发起用户管理设备的结构示意图。\n\n具体实施方式\n\n[0063]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。通常在此处附图中描述和出示的本发明实施例的组件可以以各种不同的配置来布置和设计。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0064]针对现有技术中的缺陷，本发明人发现在实际的应用中，签核发起用户出现的安全问题较大，为此，本发明提出了一种签核发起用户管理方法和设备，应用于电子签核过程，用以提高电子签核过程的安全性。\n\n[0065]具体的，本发明提出了以下具体的实施例：\n\n[0066]本发明实施例1提出了一种签核发起用户管理方法，应用于电子签核过程，如图1所示，包括以下步骤：\n\n[0067]步骤101、当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常；\n\n[0068]步骤102、若判断结果为是，判断所述签核发起用户的网络行为是否存在风险；\n\n[0069]步骤103、若判断结果为是，禁止所述签核发起用户在登录后发起任何操作。\n\n[0070]在一个具体的实施例中，例如在一个公司中的某个员工想请假，也即想发起一个签核申请，该员工就需要发起一个签核申请的流程，在该过程中，该员工就作为签核发起用户。而除了关于请假的签核申请以外，签核申请还可以有很多其他的实施例，例如关于报销的电子签核，以及关于升迁命令的电子签核等等，而对应的，发起签核过程的用户即为签核发起用户。\n\n[0071]签核发起用户首先需要登录，才能发起签核过程，因此签核发起用户会在一个登录界面输入账户，密码等登录信息，在一个具体的实施例中，输入账户以及密码的环境即为登录环境。而后续的签核申请也是在同样的环境中发起的，因此登录环境的安全性会影响到签核申请的安全性；为此，就需要对登录环境进行检测，以确定登录环境的异常程度，也即不安全的程度。\n\n[0072]在一个具体的实施例中，考虑到登录环境是网络的环境，由此IP作为一个很重要的网络标识，对所在网络环境的安全性具有很强的参考意义，正是考虑到这点，可以基于登录IP来对登录环境是否异常进行评估。一种具体的关于步骤101的实施例，其如图2所示，可以包括如下步骤：\n\n[0073]步骤11、当接收到签核发起用户的登录请求时，获取签核发起用户的登录IP；\n\n[0074]步骤12、基于所述登录IP与预设的异常IP数据库中的IP确定所述登录IP的风险值；\n\n[0075]步骤13、若风险值超过预设的风险阈值，确定所述登录环境异常；\n\n[0076]步骤14、若风险值低过预设的风险阈值，确定所述登录环境不异常。\n\n[0077]具体的，基于IP(Internet Protocol,网络之间互连的协议)来进行判断的，首先获取到签核发起用户所在登录环境的登录IP，而并在存储有异常IP的异常IP数据库中查询与该登录IP存在有关系的IP来确定登录IP的风险值。例如可以通过判断在异常IP数据库中与登录IP存在有直接连接的IP数量来进行判断登录IP的风险值，关于步骤101，所述登录环境具体包括登录IP；\n\n[0078]以上，在具体的实施例中，会预先获取到异常IP的数据，并基于该异常IP的数据生成异常IP数据库，具体的异常IP数据可以从关于安全的数据库中进行获取，以此异常IP会与例如诈骗等行为有直接或者间接的关系，以此会存在有风险。\n\n[0079]由此，通过判断签核发起用户发送登录请求时的登录IP是否为有风险的IP时通过判断登录IP是否存在于异常IP数据库中来进行的，若登录IP存在于异常IP数据库中,则说明登录IP是异常的IP，进而可以判断出登录环境异常，反之，则说明登录环境不异常，是正常的。\n\n[0080]此外，在一个其他具体的实施例中，例如还可以通过判断在异常IP数据库中与登录IP存在有直接连接的IP数量来进行判断登录IP的风险值，具体的，直接连接例如可以为在登录IP的网络场景下访问异常IP的网站；数量越多，对应的风险值越大。\n\n[0081]在另一个具体的实施例中，除了考虑来连接以外，还可以考虑具体的异常IP本身的危害性，对每个异常IP基于危害性授予危害权重，后续评估时，除了考虑数量以外，针对每个直接连接的异常IP，还需要考虑到该异常IP的危害权重，以此通过这两个因素来共同判断登录IP的风险值，一种具体的确定方式可以为，例如风险值可以为危害权重的值的和。\n\n[0082]而在确定了登录IP的风险值以后，基于该风险值与风险阈值的比较来确定登录环境是否异常。在一个具体的实施例中，例如风险值为1，风险阈值为5，则可以确定登录环境不异常。\n\n[0083]在另一个具体的实施例中，所述登录环境具体包括登录终端；在此情况下，步骤101，也即所述“当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常”，如图3所示，包括以下步骤：\n\n[0084]步骤21、获取所述签核发起用户发送登录请求的终端的终端信息；\n\n[0085]步骤22、判断所述终端信息是否存在于预先存储的已验证终端信息数据库中；\n\n[0086]步骤23、若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0087]步骤24、若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0088]在该具体的实施例中中，在事先会验证或者授权一批终端作为已验证终端，其对应的终端信息则形成已验证终端信息数据库，具体的终端信息可以包括有终端的标识，为终端设置的识别码等等。\n\n[0089]后续在进行验证时，提取到签核发起用户发送登录请求的终端的终端信息，并与已验证终端信息数据库中所存储的已验证终端信息进行匹配，若能匹配上，则说明签核发起用户所在的登录环境为已验证登录环境，也即登录环境不异常；反之，则可以确定签核发起用户所在的登录环境不是已验证登录环境，也即登录环境异常。\n\n[0090]以上，是对登录环境是否异常进行判断，若判断结果为登录环境不异常，则进行步骤104，也即允许签核发起用户发起签核申请等正常的操作流程。\n\n[0091]而若判断登录环境异常，则进行步骤103，也即判断所述签核发起用户的网络行为是否存在风险，具体的判断过程如图4所示，包括以下步骤：\n\n[0092]步骤31、获取所述签核发起用户在预设时间段内的网络行为；\n\n[0093]步骤32、针对各个网络行为，评估各个网络行为所对应的风险值；\n\n[0094]步骤33、综合所有风险值，确定总风险值；\n\n[0095]步骤34、若总风险值大于预设风险阈值，判断所述签核发起用户的网络行为存在风险。\n\n[0096]步骤35、若总风险值小于预设风险阈值，判断所述签核发起用户的网络行为不存在风险。\n\n[0097]以上，预设时间段可以为签核发起用户登录的时间段内，由于会对用户的网络行为一直进行监控，因此当确定了时间段后，可以提取该时间段内用户的网络行为，具体的会获取到多个网络行为，例如访问网站行为，支付行为等等，针对各个网络行为，进行分析评估，基于危险程度确定对应各个网络行为的风险值，例如访问明显包含有木马网站的行为就会具有很高的危险程度。\n\n[0098]在确定各个各个网络行为的风险值之后，进行综合，以确定总的风险值，具体的可以直接相加得到总风险值；例如共有3个风险值，分别为1.1、0.1、3.3，对应的总风险值则为：1.1+0.1+3.3＝4.5；还可以事先为各个网络行为设置权重，基于不同的网络行为，基于权重以及对应的风险值来共同确定总风险值；仍以上述为例来进行说明，3个风险值对应的权重分别为0.3、0.1、0.1，则对应的总风险值可以为0.3×1.1+0.1×0.1+0.1×3.3＝0.67。\n\n[0099]不同的总风险值的确定方式对应有不同的预设风险阈值，在此以总风险值为4.5为例来进行说明，若预设风险阈值为2，由于4.5＞2，因此可以判断签核发起用户的网络行为存在风险；而若是预设风险阈值为5，由于4.5＜5，可以判断签核发起用户的网络行为不存在风险。\n\n[0100]在步骤102的判断过程中，若确定签核发起用户的网络行为不存在风险，则允许签核发起用户按照正常流程发起签核过程以及其他的操作；而若确定签核发起用户的网络行为存在风险，则执行步骤103，即禁止所述签核发起用户在登录后发起任何操作。\n\n[0101]在一个具体的实施例中，禁止所述签核发起用户在登录后发起任何操作，包括：\n\n[0102]获取所述签核发起用户发送的登录请求中的账户信息；\n\n[0103]将所述账户信息中的账户加入操作黑名单中。\n\n[0104]在该具体的实施例中，操作黑名单的作用是存储在其上的账户无法执行登录后的任何操作，因此可以通过将签核发起用户对应的账户加入操作黑名单来禁止签核发起用户操作。此外，还可以有其他的方式，例如拒绝签核发起用户的登录，使得签核发起用户无法登录，自然无法执行登录后的任何操作。\n\n[0105]本发明实施例提出了一种签核发起用户管理方法和设备，应用于电子签核过程，其中，该签核发起用户管理方法包括：当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常；若判断结果为是，判断所述签核发起用户的网络行为是否存在风险；若判断结果为是，禁止所述签核发起用户在登录后发起任何操作。以此，通过上述方法，提高了电子签核过程的安全性，保障了用户的使用体验。\n\n[0106]为了对本发明进行进一步的说明，本发明实施例2还公开了一种签核发起用户管理设备，应用于电子签核过程，如图5所示，包括：\n\n[0107]第一判断模块201，用于当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常；\n\n[0108]第二判断模块202，用于当第一判断模块的判断结果为是时，判断所述签核发起用户的网络行为是否存在风险；\n\n[0109]处理模块203，用于当第二判断模块的判断结果为是时，禁止所述签核发起用户在登录后发起任何操作。\n\n[0110]在一个具体的实施例中，所述第二判断模块202，用于：\n\n[0111]获取所述签核发起用户在预设时间段内的网络行为；\n\n[0112]针对各个网络行为，评估各个网络行为所对应的风险值；\n\n[0113]综合所有风险值，确定总风险值；\n\n[0114]若总风险值大于预设风险阈值，判断所述签核发起用户的网络行为存在风险；\n\n[0115]若总风险值小于预设风险阈值，判断所述签核发起用户的网络行为不存在风险。\n\n[0116]在一个具体的实施例中，所述处理模块203，用于：\n\n[0117]获取所述签核发起用户发送的登录请求中的账户信息；\n\n[0118]将所述账户信息中的账户加入操作黑名单中。\n\n[0119]在一个具体的实施例中，所述登录环境具体包括登录IP；\n\n[0120]所述第一判断模块201，用于：\n\n[0121]当接收到签核发起用户的登录请求时，获取签核发起用户的登录IP；\n\n[0122]基于所述登录IP与预设的异常IP数据库中的IP确定所述登录IP的风险值；\n\n[0123]若风险值超过预设的风险阈值，确定所述登录环境异常；\n\n[0124]若风险值低过预设的风险阈值，确定所述登录环境不异常。\n\n[0125]在一个具体的实施例中，所述登录环境具体包括登录终端；\n\n[0126]所述第一判断模块201，用于：\n\n[0127]获取所述签核发起用户发送登录请求的终端的终端信息；\n\n[0128]判断所述终端信息是否存在于预先存储的已验证终端信息数据库中；\n\n[0129]若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0130]若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0131]与现有技术相比，本发明实施例提出了一种签核发起用户管理方法和设备，应用于电子签核过程，其中，该签核发起用户管理方法包括：当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常；若判断结果为是，判断所述签核发起用户的网络行为是否存在风险；若判断结果为是，禁止所述签核发起用户在登录后发起任何操作。以此，通过上述方法，提高了电子签核过程的安全性，保障了用户的使用体验。\n\n[0132]本领域技术人员可以理解附图只是一个优选实施场景的示意图，附图中的模块或流程并不一定是实施本发明所必须的。\n\n[0133]本领域技术人员可以理解实施场景中的装置中的模块可以按照实施场景描述进行分布于实施场景的装置中，也可以进行相应变化位于不同于本实施场景的一个或多个装置中。上述实施场景的模块可以合并为一个模块，也可以进一步拆分成多个子模块。\n\n[0134]上述本发明序号仅仅为了描述，不代表实施场景的优劣。\n\n[0135]以上公开的仅为本发明的几个具体实施场景，但是，本发明并非局限于此，任何本领域的技术人员能思之的变化都应落入本发明的保护范围。\n\n', '技术领域\n\n[0001]本发明涉及网络技术领域，特别涉及一种签核发起用户管理方法和设备。\n\n背景技术\n\n[0002]在现有技术中，文件的签核一般是人工来进行的，在具体的过程中，需要将相应的文件打印出来，并以人工的方式传递给各个需要签核的签核人处，操作流程繁琐，费时费力，效率低下；且当某位签核人不在的时候，就会耽搁整个流程的正常进行。\n\n[0003]为此，目前有提到有一种电子签核的方式，但这种方式安全性不高，影响用户的体验。\n\n发明内容\n\n[0004]针对现有技术中的缺陷，本发明提出了一种签核发起用户管理方法和设备，用以克服现有技术中的缺陷，提高电子签核的安全性，保障用户的体验。\n\n[0005]具体的，本发明提出了以下具体的实施例：\n\n[0006]本发明实施例提出了一种签核发起用户管理方法，应用于电子签核过程，包括：\n\n[0007]当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常；\n\n[0008]若判断结果为是，判断所述签核发起用户的网络行为是否存在风险；\n\n[0009]若判断结果为是，禁止所述签核发起用户在登录后发起任何操作。\n\n[0010]进一步的，在一个具体的实施例中，所述“判断所述签核发起用户的网络行为是否存在风险”，包括：\n\n[0011]获取所述签核发起用户在预设时间段内的网络行为；\n\n[0012]针对各个网络行为，评估各个网络行为所对应的风险值；\n\n[0013]综合所有风险值，确定总风险值；\n\n[0014]若总风险值大于预设风险阈值，判断所述签核发起用户的网络行为存在风险；\n\n[0015]若总风险值小于预设风险阈值，判断所述签核发起用户的网络行为不存在风险。\n\n[0016]进一步的，在一个具体的实施例中，所述“禁止所述签核发起用户在登录后发起任何操作”，包括：\n\n[0017]获取所述签核发起用户发送的登录请求中的账户信息；\n\n[0018]将所述账户信息中的账户加入操作黑名单中。\n\n[0019]进一步的，在一个具体的实施例中，所述登录环境具体包括登录IP；\n\n[0020]所述“当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常”，包括：\n\n[0021]当接收到签核发起用户的登录请求时，获取签核发起用户的登录IP；\n\n[0022]基于所述登录IP与预设的异常IP数据库中的IP确定所述登录IP的风险值；\n\n[0023]若风险值超过预设的风险阈值，确定所述登录环境异常；\n\n[0024]若风险值低过预设的风险阈值，确定所述登录环境不异常。\n\n[0025]进一步的，在一个具体的实施例中，所述登录环境具体包括登录终端；\n\n[0026]所述“当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常”，包括：\n\n[0027]获取所述签核发起用户发送登录请求的终端的终端信息；\n\n[0028]判断所述终端信息是否存在于预先存储的已验证终端信息数据库中；\n\n[0029]若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0030]若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0031]本发明实施例还提出了一种签核发起用户管理设备，应用于电子签核过程，包括：\n\n[0032]第一判断模块，用于当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常；\n\n[0033]第二判断模块，用于当第一判断模块的判断结果为是时，判断所述签核发起用户的网络行为是否存在风险；\n\n[0034]处理模块，用于当第二判断模块的判断结果为是时，禁止所述签核发起用户在登录后发起任何操作。\n\n[0035]进一步的，在一个具体的实施例中，所述第二判断模块，用于：\n\n[0036]获取所述签核发起用户在预设时间段内的网络行为；\n\n[0037]针对各个网络行为，评估各个网络行为所对应的风险值；\n\n[0038]综合所有风险值，确定总风险值；\n\n[0039]若总风险值大于预设风险阈值，判断所述签核发起用户的网络行为存在风险；\n\n[0040]若总风险值小于预设风险阈值，判断所述签核发起用户的网络行为不存在风险。\n\n[0041]进一步的，在一个具体的实施例中，所述处理模块，用于：\n\n[0042]获取所述签核发起用户发送的登录请求中的账户信息；\n\n[0043]将所述账户信息中的账户加入操作黑名单中。\n\n[0044]进一步的，在一个具体的实施例中，所述登录环境具体包括登录IP；\n\n[0045]所述第一判断模块，用于：\n\n[0046]当接收到签核发起用户的登录请求时，获取签核发起用户的登录IP；\n\n[0047]基于所述登录IP与预设的异常IP数据库中的IP确定所述登录IP的风险值；\n\n[0048]若风险值超过预设的风险阈值，确定所述登录环境异常；\n\n[0049]若风险值低过预设的风险阈值，确定所述登录环境不异常。\n\n[0050]进一步的，在一个具体的实施例中，所述登录环境具体包括登录终端；\n\n[0051]所述第一判断模块，用于：\n\n[0052]获取所述签核发起用户发送登录请求的终端的终端信息；\n\n[0053]判断所述终端信息是否存在于预先存储的已验证终端信息数据库中；\n\n[0054]若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0055]若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0056]与现有技术相比，本发明实施例提出了一种签核发起用户管理方法和设备，应用于电子签核过程，其中，该签核发起用户管理方法包括：当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常；若判断结果为是，判断所述签核发起用户的网络行为是否存在风险；若判断结果为是，禁止所述签核发起用户在登录后发起任何操作。以此，通过上述方法，提高了电子签核过程的安全性，保障了用户的使用体验。\n\n附图说明\n\n[0057]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0058]图1为本发明实施例提出的一种签核发起用户管理方法流程示意图；\n\n[0059]图2为本发明实施例提出的一种对登录环境是否异常进行评估的方法流程示意图；\n\n[0060]图3为本发明实施例提出的一种对登录环境是否异常进行评估的方法流程示意图；\n\n[0061]图4为本发明实施例提出的对签核发起用户的网络行为是否存在风险进行评估的方法流程示意图；\n\n[0062]图5为本发明实施例提出的一种签核发起用户管理设备的结构示意图。\n\n具体实施方式\n\n[0063]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。通常在此处附图中描述和出示的本发明实施例的组件可以以各种不同的配置来布置和设计。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0064]针对现有技术中的缺陷，本发明人发现在实际的应用中，签核发起用户出现的安全问题较大，为此，本发明提出了一种签核发起用户管理方法和设备，应用于电子签核过程，用以提高电子签核过程的安全性。\n\n[0065]具体的，本发明提出了以下具体的实施例：\n\n[0066]本发明实施例1提出了一种签核发起用户管理方法，应用于电子签核过程，如图1所示，包括以下步骤：\n\n[0067]步骤101、当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常；\n\n[0068]步骤102、若判断结果为是，判断所述签核发起用户的网络行为是否存在风险；\n\n[0069]步骤103、若判断结果为是，禁止所述签核发起用户在登录后发起任何操作。\n\n[0070]在一个具体的实施例中，例如在一个公司中的某个员工想请假，也即想发起一个签核申请，该员工就需要发起一个签核申请的流程，在该过程中，该员工就作为签核发起用户。而除了关于请假的签核申请以外，签核申请还可以有很多其他的实施例，例如关于报销的电子签核，以及关于升迁命令的电子签核等等，而对应的，发起签核过程的用户即为签核发起用户。\n\n[0071]签核发起用户首先需要登录，才能发起签核过程，因此签核发起用户会在一个登录界面输入账户，密码等登录信息，在一个具体的实施例中，输入账户以及密码的环境即为登录环境。而后续的签核申请也是在同样的环境中发起的，因此登录环境的安全性会影响到签核申请的安全性；为此，就需要对登录环境进行检测，以确定登录环境的异常程度，也即不安全的程度。\n\n[0072]在一个具体的实施例中，考虑到登录环境是网络的环境，由此IP作为一个很重要的网络标识，对所在网络环境的安全性具有很强的参考意义，正是考虑到这点，可以基于登录IP来对登录环境是否异常进行评估。一种具体的关于步骤101的实施例，其如图2所示，可以包括如下步骤：\n\n[0073]步骤11、当接收到签核发起用户的登录请求时，获取签核发起用户的登录IP；\n\n[0074]步骤12、基于所述登录IP与预设的异常IP数据库中的IP确定所述登录IP的风险值；\n\n[0075]步骤13、若风险值超过预设的风险阈值，确定所述登录环境异常；\n\n[0076]步骤14、若风险值低过预设的风险阈值，确定所述登录环境不异常。\n\n[0077]具体的，基于IP(Internet Protocol,网络之间互连的协议)来进行判断的，首先获取到签核发起用户所在登录环境的登录IP，而并在存储有异常IP的异常IP数据库中查询与该登录IP存在有关系的IP来确定登录IP的风险值。例如可以通过判断在异常IP数据库中与登录IP存在有直接连接的IP数量来进行判断登录IP的风险值，关于步骤101，所述登录环境具体包括登录IP；\n\n[0078]以上，在具体的实施例中，会预先获取到异常IP的数据，并基于该异常IP的数据生成异常IP数据库，具体的异常IP数据可以从关于安全的数据库中进行获取，以此异常IP会与例如诈骗等行为有直接或者间接的关系，以此会存在有风险。\n\n[0079]由此，通过判断签核发起用户发送登录请求时的登录IP是否为有风险的IP时通过判断登录IP是否存在于异常IP数据库中来进行的，若登录IP存在于异常IP数据库中,则说明登录IP是异常的IP，进而可以判断出登录环境异常，反之，则说明登录环境不异常，是正常的。\n\n[0080]此外，在一个其他具体的实施例中，例如还可以通过判断在异常IP数据库中与登录IP存在有直接连接的IP数量来进行判断登录IP的风险值，具体的，直接连接例如可以为在登录IP的网络场景下访问异常IP的网站；数量越多，对应的风险值越大。\n\n[0081]在另一个具体的实施例中，除了考虑来连接以外，还可以考虑具体的异常IP本身的危害性，对每个异常IP基于危害性授予危害权重，后续评估时，除了考虑数量以外，针对每个直接连接的异常IP，还需要考虑到该异常IP的危害权重，以此通过这两个因素来共同判断登录IP的风险值，一种具体的确定方式可以为，例如风险值可以为危害权重的值的和。\n\n[0082]而在确定了登录IP的风险值以后，基于该风险值与风险阈值的比较来确定登录环境是否异常。在一个具体的实施例中，例如风险值为1，风险阈值为5，则可以确定登录环境不异常。\n\n[0083]在另一个具体的实施例中，所述登录环境具体包括登录终端；在此情况下，步骤101，也即所述“当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常”，如图3所示，包括以下步骤：\n\n[0084]步骤21、获取所述签核发起用户发送登录请求的终端的终端信息；\n\n[0085]步骤22、判断所述终端信息是否存在于预先存储的已验证终端信息数据库中；\n\n[0086]步骤23、若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0087]步骤24、若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0088]在该具体的实施例中中，在事先会验证或者授权一批终端作为已验证终端，其对应的终端信息则形成已验证终端信息数据库，具体的终端信息可以包括有终端的标识，为终端设置的识别码等等。\n\n[0089]后续在进行验证时，提取到签核发起用户发送登录请求的终端的终端信息，并与已验证终端信息数据库中所存储的已验证终端信息进行匹配，若能匹配上，则说明签核发起用户所在的登录环境为已验证登录环境，也即登录环境不异常；反之，则可以确定签核发起用户所在的登录环境不是已验证登录环境，也即登录环境异常。\n\n[0090]以上，是对登录环境是否异常进行判断，若判断结果为登录环境不异常，则进行步骤104，也即允许签核发起用户发起签核申请等正常的操作流程。\n\n[0091]而若判断登录环境异常，则进行步骤103，也即判断所述签核发起用户的网络行为是否存在风险，具体的判断过程如图4所示，包括以下步骤：\n\n[0092]步骤31、获取所述签核发起用户在预设时间段内的网络行为；\n\n[0093]步骤32、针对各个网络行为，评估各个网络行为所对应的风险值；\n\n[0094]步骤33、综合所有风险值，确定总风险值；\n\n[0095]步骤34、若总风险值大于预设风险阈值，判断所述签核发起用户的网络行为存在风险。\n\n[0096]步骤35、若总风险值小于预设风险阈值，判断所述签核发起用户的网络行为不存在风险。\n\n[0097]以上，预设时间段可以为签核发起用户登录的时间段内，由于会对用户的网络行为一直进行监控，因此当确定了时间段后，可以提取该时间段内用户的网络行为，具体的会获取到多个网络行为，例如访问网站行为，支付行为等等，针对各个网络行为，进行分析评估，基于危险程度确定对应各个网络行为的风险值，例如访问明显包含有木马网站的行为就会具有很高的危险程度。\n\n[0098]在确定各个各个网络行为的风险值之后，进行综合，以确定总的风险值，具体的可以直接相加得到总风险值；例如共有3个风险值，分别为1.1、0.1、3.3，对应的总风险值则为：1.1+0.1+3.3＝4.5；还可以事先为各个网络行为设置权重，基于不同的网络行为，基于权重以及对应的风险值来共同确定总风险值；仍以上述为例来进行说明，3个风险值对应的权重分别为0.3、0.1、0.1，则对应的总风险值可以为0.3×1.1+0.1×0.1+0.1×3.3＝0.67。\n\n[0099]不同的总风险值的确定方式对应有不同的预设风险阈值，在此以总风险值为4.5为例来进行说明，若预设风险阈值为2，由于4.5＞2，因此可以判断签核发起用户的网络行为存在风险；而若是预设风险阈值为5，由于4.5＜5，可以判断签核发起用户的网络行为不存在风险。\n\n[0100]在步骤102的判断过程中，若确定签核发起用户的网络行为不存在风险，则允许签核发起用户按照正常流程发起签核过程以及其他的操作；而若确定签核发起用户的网络行为存在风险，则执行步骤103，即禁止所述签核发起用户在登录后发起任何操作。\n\n[0101]在一个具体的实施例中，禁止所述签核发起用户在登录后发起任何操作，包括：\n\n[0102]获取所述签核发起用户发送的登录请求中的账户信息；\n\n[0103]将所述账户信息中的账户加入操作黑名单中。\n\n[0104]在该具体的实施例中，操作黑名单的作用是存储在其上的账户无法执行登录后的任何操作，因此可以通过将签核发起用户对应的账户加入操作黑名单来禁止签核发起用户操作。此外，还可以有其他的方式，例如拒绝签核发起用户的登录，使得签核发起用户无法登录，自然无法执行登录后的任何操作。\n\n[0105]本发明实施例提出了一种签核发起用户管理方法和设备，应用于电子签核过程，其中，该签核发起用户管理方法包括：当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常；若判断结果为是，判断所述签核发起用户的网络行为是否存在风险；若判断结果为是，禁止所述签核发起用户在登录后发起任何操作。以此，通过上述方法，提高了电子签核过程的安全性，保障了用户的使用体验。\n\n[0106]为了对本发明进行进一步的说明，本发明实施例2还公开了一种签核发起用户管理设备，应用于电子签核过程，如图5所示，包括：\n\n[0107]第一判断模块201，用于当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常；\n\n[0108]第二判断模块202，用于当第一判断模块的判断结果为是时，判断所述签核发起用户的网络行为是否存在风险；\n\n[0109]处理模块203，用于当第二判断模块的判断结果为是时，禁止所述签核发起用户在登录后发起任何操作。\n\n[0110]在一个具体的实施例中，所述第二判断模块202，用于：\n\n[0111]获取所述签核发起用户在预设时间段内的网络行为；\n\n[0112]针对各个网络行为，评估各个网络行为所对应的风险值；\n\n[0113]综合所有风险值，确定总风险值；\n\n[0114]若总风险值大于预设风险阈值，判断所述签核发起用户的网络行为存在风险；\n\n[0115]若总风险值小于预设风险阈值，判断所述签核发起用户的网络行为不存在风险。\n\n[0116]在一个具体的实施例中，所述处理模块203，用于：\n\n[0117]获取所述签核发起用户发送的登录请求中的账户信息；\n\n[0118]将所述账户信息中的账户加入操作黑名单中。\n\n[0119]在一个具体的实施例中，所述登录环境具体包括登录IP；\n\n[0120]所述第一判断模块201，用于：\n\n[0121]当接收到签核发起用户的登录请求时，获取签核发起用户的登录IP；\n\n[0122]基于所述登录IP与预设的异常IP数据库中的IP确定所述登录IP的风险值；\n\n[0123]若风险值超过预设的风险阈值，确定所述登录环境异常；\n\n[0124]若风险值低过预设的风险阈值，确定所述登录环境不异常。\n\n[0125]在一个具体的实施例中，所述登录环境具体包括登录终端；\n\n[0126]所述第一判断模块201，用于：\n\n[0127]获取所述签核发起用户发送登录请求的终端的终端信息；\n\n[0128]判断所述终端信息是否存在于预先存储的已验证终端信息数据库中；\n\n[0129]若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0130]若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0131]与现有技术相比，本发明实施例提出了一种签核发起用户管理方法和设备，应用于电子签核过程，其中，该签核发起用户管理方法包括：当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常；若判断结果为是，判断所述签核发起用户的网络行为是否存在风险；若判断结果为是，禁止所述签核发起用户在登录后发起任何操作。以此，通过上述方法，提高了电子签核过程的安全性，保障了用户的使用体验。\n\n[0132]本领域技术人员可以理解附图只是一个优选实施场景的示意图，附图中的模块或流程并不一定是实施本发明所必须的。\n\n[0133]本领域技术人员可以理解实施场景中的装置中的模块可以按照实施场景描述进行分布于实施场景的装置中，也可以进行相应变化位于不同于本实施场景的一个或多个装置中。上述实施场景的模块可以合并为一个模块，也可以进一步拆分成多个子模块。\n\n[0134]上述本发明序号仅仅为了描述，不代表实施场景的优劣。\n\n[0135]以上公开的仅为本发明的几个具体实施场景，但是，本发明并非局限于此，任何本领域的技术人员能思之的变化都应落入本发明的保护范围。\n\n');
INSERT INTO `os_patent_instruction_text` VALUES (11148, 24086, '技术领域\n\n[0001]本发明涉及电子签批技术领域，具体而言，涉及一种电子签批用户管理方法及系统。\n\n背景技术\n\n[0002]对于公司内部签批流程，通常需要将待签批文件打印出来，然后给到各个签批人处进行签批签字盖章。这样的签批流程较为繁琐，工作效率低下。由此，电子签批应运而生。近年来，电子签批在企业流程、行业应用、移动支付和个人信息安全等各种场景中得到越来越多的应用。\n\n[0003]但现有的电子签批大多通过公共网络传输签批文件，对签批文件的签核缺乏保护机制。对于企业来说，企业的财政开支状况、项目申请及研发文档等都是非常机密的材料，一些不法的竞争者经常通过技术手段窃取机密，使受害者遭受巨大的经济损失。\n\n发明内容\n\n[0004]本发明正是基于上述问题，提出了一种对签批文件具有保护机制的电子签批用户管理方法及系统。\n\n[0005]有鉴于此，本发明一方面提出了一种电子签批用户管理方法，包括：\n\n[0006]响应用户的登录请求，检测所述电子签批的登录环境是否安全；\n\n[0007]当所述登录环境不安全时，随机生成及展示验证提示信息，获取及比较用户输入的验证信息和所述验证提示信息；\n\n[0008]当所述登录环境安全，或所述验证信息和所述验证提示信息一致时，响应用户的签核请求，显示待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0009]进一步地，步骤“响应用户的登录请求，检测所述电子签批的登录环境是否安全”包括：\n\n[0010]响应用户的登录请求，监测当前登录环境；\n\n[0011]判断监测到的所述登录环境是否满足服务器端预设的风险条件；\n\n[0012]当所述登录环境满足所述风险条件时，所述登录环境安全；反之，所述登录环境不安全。\n\n[0013]进一步地，步骤“当所述登录环境不安全时，随机生成及展示验证提示信息，获取及比较用户输入的验证信息和所述验证提示信息”包括：\n\n[0014]当所述登录环境不安全时，显示登录验证界面，获取用户在所述登录验证界面输入的登录信息；\n\n[0015]比较所述输入的登录信息和服务器端存储的该用户的登录信息；\n\n[0016]当所述输入的登录信息和所述存储的登录信息不一致时，生成及展示登录失败信息；\n\n[0017]当所述输入的登录信息和所述存储的登录信息一致时，响应用户的验证请求，随机生成及展示所述验证提示信息；\n\n[0018]获取用户在所述登录验证界面输入的验证信息，比较所述验证信息和所述验证提示信息。\n\n[0019]进一步地，步骤“当所述登录环境安全时，响应用户的签核请求，显示待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件”还包括：\n\n[0020]当所述登录环境安全时，显示登录界面，获取用户在所述登录界面输入的登录信息；\n\n[0021]比较所述输入的登录信息和服务器端存储的该用户的登录信息；\n\n[0022]当所述输入的登录信息和所述存储的登录信息不一致时，生成及展示登录失败信息；\n\n[0023]当所述输入的登录信息和所述存储的登录信息一致时，响应用户的签核请求，显示待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0024]进一步地，还包括：当所述验证信息和所述验证提示信息不一致时，生成及展示简略签核信息。\n\n[0025]本发明另一方面还提供了一种电子签批用户管理系统，包括检测单元、验证单元和签核单元。\n\n[0026]所述检测单元，用于响应用户的登录请求，检测所述电子签批的登录环境是否安全。\n\n[0027]所述验证单元，用于当所述登录环境不安全时，随机生成及展示验证提示信息，获取及比较用户输入的验证信息和所述验证提示信息。\n\n[0028]所述签核单元，用于当所述登录环境安全，或所述验证信息和所述验证提示信息一致时，响应用户的签核请求，显示待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0029]进一步地，所述电子签批用户管理系统还包括存储器，所述检测单元包括监测模块和判断模块。\n\n[0030]所述监测模块，用于响应用户的登录请求，监测当前登录环境。\n\n[0031]所述判断模块，用于判断监测到的所述登录环境是否满足所述存储器存储的风险条件。\n\n[0032]进一步地，所述电子签批用户管理系统还包括存储器、处理器和登录单元，所述登录单元包括获取模块、第一比较模块和第一提示模块。\n\n[0033]所述处理器，用于当所述登录环境安全时，显示登录界面，控制所述获取模块获取用户在所述登录界面输入的登录信息，或当所述登录环境不安全时，显示登录验证界面，控制所述获取模块获取用户在所述登录验证界面输入的登录信息。\n\n[0034]所述第一比较模块，用于比较所述输入的登录信息和所述存储器存储的该用户的登录信息。\n\n[0035]所述第一提示模块，用于当所述输入的登录信息和所述存储的登录信息不一致时，生成及展示登录失败信息。\n\n[0036]进一步地，所述验证单元包括验证模块、第二比较模块和第二提示模块。\n\n[0037]所述验证模块，用于当所述输入的登录信息和所述存储的登录信息一致时，响应用户的验证请求，随机生成及展示所述验证提示信息。\n\n[0038]所述第二比较模块，用于获取用户在所述登录验证界面输入的验证信息，比较所述验证信息和所述验证提示信息。\n\n[0039]所述第二提示模块，用于当所述验证信息和所述验证提示信息不一致时，生成及展示简略签核信息。\n\n[0040]进一步地，所述电子签批用户管理系统还包括处理器，\n\n[0041]所述处理器，用于当所述登录环境安全及所述输入的登录信息和所述存储的登录信息一致，或所述验证信息和所述验证提示信息一致时，控制签核单元响应用户的签核请求，显示所述待签核文件，响应用户对所述待签核文件的签核操作，生成所述已签核文件。\n\n[0042]本发明实施例提供的电子签批用户管理方法及系统，自动检测当前登录环境是否安全，当登录环境不安全时提示用户进行信息验证，用户只有验证通过才能完成签核行为，从而保证电子签批的安全性，避免非法分子对重要信息的窃取，对用户造成不必要的损失。\n\n[0043]为使本发明的上述目的、特征和优点能更明显易懂，下文特举较佳实施例，并配合所附附图，作详细说明如下。\n\n附图说明\n\n[0044]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0045]图1示出了本发明实施例提供的一种电子签批用户管理方法的第一流程示意图；\n\n[0046]图2示出了本发明实施例提供的一种电子签批用户管理方法的第二流程示意图；\n\n[0047]图3示出了本发明实施例提供的一种电子签批用户管理系统的结构示意图。\n\n[0048]主要元件符号说明：\n\n[0049]100-电子签批用户管理系统；10-存储器；20-处理器；30-检测单元；31-监测模块；32-判断模块；40-登录单元；41-获取模块；42-第一比较模块；43-第一提示模块；50-验证单元；51-验证模块；52-第二比较模块；53-第二提示模块；60-签核单元。\n\n具体实施方式\n\n[0050]为了便于理解本发明，下面将参照相关附图对电子签批用户管理方法及系统进行更清楚、完整地描述。附图中给出了电子签批用户管理方法及系统的优选实施例。电子签批用户管理方法及系统可以通过许多不同的形式来实现，并不限于本文所描述的实施例。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0051]实施例1\n\n[0052]图1示出了本发明实施例提供的一种电子签批用户管理方法的流程示意图。如图1所示，本发明实施例提供的电子签批用户管理方法，包括：\n\n[0053]步骤S10，响应用户的登录请求，检测所述电子签批的登录环境是否安全。\n\n[0054]具体地，响应用户的登录请求，监测用户当前登录环境，获取当前登录环境的属性信息。所述属性信息包括当前登录环境的网络接入信息，及当前登录终端的IP地址或硬件识别码等。所述网络包括需要认证和不需要认证的免费无线网络。\n\n[0055]进一步地，获取服务器端存储的一风险条件，所述风险条件包括安全网络信息，或该用户的历史登录信息等。所述历史登录信息包括该用户近期登录时间及登录终端的IP地址或硬件识别码等。判断监测到的所述登录环境是否满足服务器端预设的风险条件，当所述登录环境满足所述风险条件时，表示所述登录环境安全；反之，表示所述登录环境不安全。\n\n[0056]进一步地，比较所述登录环境的属性信息与所述风险条件是否匹配，当所述属性信息与所述风险条件匹配时，表示所述登录环境安全；反之，表示所述登录环境不安全。具体地，比较当前登录环境的网络接入信息与所述安全网络信息是否匹配，从而判断当前登录环境是否存在病毒、木马等及存在病毒、木马等的可能性；比较当前登录终端的IP地址或硬件识别码与该用户的历史登录信息是否匹配，从而判断当前登录环境是否为在用户常用登陆终端的登录或异地登录。当然，检测登录环境是否安全的方式还有很多，这里不再一一赘述。\n\n[0057]步骤S20，当所述登录环境不安全时，随机生成及展示验证提示信息，获取及比较用户输入的验证信息和所述验证提示信息。\n\n[0058]具体地，当所述登录环境不安全时，显示登录验证界面。所述登录验证界面包括登录信息输入框和验证信息输入框等。获取用户在所述登录验证界面输入的登录信息。所述登录信息可以是用户名和密码等。比较所述输入的登录信息和服务器端存储的该用户的登录信息。所述服务器端存储的该用户的登录信息为用户注册电子签批系统时预留的用户名、密码等信息。\n\n[0059]进一步地，当用户输入的登录信息和服务器端存储的登录信息不一致时，生成及展示登录失败信息。所述登录失败信息为用于提示用户名或密码不存在或错误的文本、语音或图片等信息。此时，用户无法浏览电子签批系统内任何信息，无法完成签核行为，从而保证电子签批的安全性。\n\n[0060]进一步地，当用户输入的登录信息和服务器端存储的登录信息一致时，响应用户的验证请求，随机生成及展示所述验证提示信息。所述验证提示信息为随机生成的文字、数字、字母、图形轨迹等，或前述项目的任一组合。获取用户在所述登录验证界面输入的验证信息，比较所述验证信息和所述验证提示信息。当所述验证信息和所述验证提示信息不一致时，生成及展示简略签核信息。所述简略签核信息为包括电子签批主题、发起人或发起时间的文本、语音或图片等信息。此时，用户只能浏览电子签批系统内简略签核信息，但不能了解电子签批的具体内容，无法完成签核行为，从而保证电子签批的安全性。\n\n[0061]步骤S30，当所述登录环境安全，或所述验证信息和所述验证提示信息一致时，响应用户的签核请求，显示待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0062]具体地，可以理解，用户只有在成功登录电子签批系统后才能完成签核行为，本实施例中，成功登录电子签批系统包括两种方式。一种方式为用户输入的验证信息和所述电子签批系统生成的验证提示信息一致。另一方式为登录环境安全且用户输入的登录信息和服务器端存储的登录信息一致。\n\n[0063]进一步地，当所述登录环境安全时，显示登录界面。所述登录界面包括用户登录信息输入框等。获取用户在所述登录界面输入的登录信息。比较所述输入的登录信息和服务器端存储的该用户的登录信息。当用户输入的登录信息和服务器端存储的登录信息不一致时，生成及展示登录失败信息。当用户输入的登录信息和服务器端存储的登录信息一致时，表示用户成功登录电子签批系统，用户可以完成签核行为。响应用户的签核请求，显示电子签批发起人上传的待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0064]进一步地，当用户输入的验证信息和所述电子签批系统生成的验证提示信息一致时，表示用户成功登录电子签批系统，用户可以完成签核行为。响应用户的签核请求，显示电子签批发起人上传的待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0065]实施例2\n\n[0066]图2示出了本发明实施例提供的一种电子签批用户管理方法的流程示意图。如图2所示，本发明实施例提供的电子签批用户管理方法，包括：\n\n[0067]步骤S1，响应用户的登录请求，监测当前登录环境。\n\n[0068]具体地，响应用户的登录请求，监测用户当前登录环境，获取当前登录环境的属性信息。所述属性信息包括当前登录环境的网络接入信息，及当前登录终端的IP地址或硬件识别码等。所述网络包括需要认证和不需要认证的免费无线网络。\n\n[0069]步骤S2，判断监测到的所述登录环境是否满足服务器端预设的风险条件，当所述登录环境满足所述风险条件时，执行步骤S31；反之，执行步骤S41。\n\n[0070]具体地，获取服务器端存储的一风险条件，所述风险条件包括安全网络信息，或该用户的历史登录信息等。所述历史登录信息包括该用户近期登录时间及登录终端的IP地址或硬件识别码等。判断监测到的所述登录环境是否满足服务器端预设的风险条件，当所述登录环境满足所述风险条件时，表示所述登录环境安全；反之，表示所述登录环境不安全。\n\n[0071]进一步地，比较所述登录环境的属性信息与所述风险条件是否匹配，当所述属性信息与所述风险条件匹配时，表示所述登录环境安全；反之，表示所述登录环境不安全。具体地，比较当前登录环境的网络接入信息与所述安全网络信息是否匹配，从而判断当前登录环境是否存在病毒、木马等，及存在病毒、木马等的可能性；比较当前登录终端的IP地址或硬件识别码与该用户的历史登录信息是否匹配，从而判断当前登录环境是否为在用户常用登陆终端的登录或异地登录。当然，检测登录环境是否安全的方式还有很多，在此不再一一赘述。\n\n[0072]步骤S31，当所述登录环境安全时，显示登录界面，获取用户在所述登录界面输入的登录信息。\n\n[0073]具体地，当所述登录环境安全时，显示登录界面。所述登录界面包括登录信息输入框等。获取用户在所述登录界面输入的登录信息。所述登录信息可以是用户名和密码等。\n\n[0074]步骤S32，比较所述输入的登录信息和服务器端存储的该用户的登录信息，当所述输入的登录信息和所述存储的登录信息一致时，执行步骤S5。\n\n[0075]具体地，比较用户输入的登录信息和服务器端存储的该用户的登录信息。所述服务器端存储的该用户的登录信息为用户注册电子签批系统时预留的用户名、密码等信息。当所述输入的登录信息和所述存储的登录信息一致时，用户成功登陆电子签批系统。可以理解，用户只有在成功登录电子签批系统后才能完成签核行为，从而保证电子签批的安全性。\n\n[0076]步骤S33，当所述输入的登录信息和所述存储的登录信息不一致时，生成及展示登录失败信息。\n\n[0077]具体地地，所述登录失败信息为用于提示用户名或密码不存在或错误的文本、语音或图片等信息。此时，用户无法浏览电子签批系统内任何信息，无法完成签核行为，从而保证电子签批的安全性。\n\n[0078]步骤S41，当所述登录环境不安全时，显示登录验证界面，获取用户在所述登录验证界面输入的登录信息。\n\n[0079]具体地，当所述登录环境不安全时，显示登录验证界面。所述登录验证界面包括登录信息输入框和验证信息输入框等。获取用户在所述登录验证界面输入的登录信息。所述登录信息可以是用户名和密码等。\n\n[0080]步骤S42，比较所述输入的登录信息和服务器端存储的该用户的登录信息。\n\n[0081]具体地，比较所述输入的登录信息和服务器端存储的该用户的登录信息。所述服务器端存储的该用户的登录信息为用户注册电子签批系统时预留的用户名、密码等信息。\n\n[0082]步骤S43，当所述输入的登录信息和所述存储的登录信息不一致时，生成及展示登录失败信息。\n\n[0083]具体地，所述登录失败信息为用于提示用户名或密码不存在或错误的文本、语音或图片等信息。此时，用户无法浏览电子签批系统内任何信息，无法完成签核行为，从而保证电子签批的安全性。\n\n[0084]步骤S44，当所述输入的登录信息和所述存储的登录信息一致时，响应用户的验证请求，随机生成及展示所述验证提示信息。\n\n[0085]具体地，当所述输入的登录信息和所述存储的登录信息一致时，表示用户输入的登录信息正确。但由于当前登陆环境不安全，为了保证电子签核的安全性，仍需进一步地认证才能进行签核行为。响应用户的验证请求，随机生成及展示所述验证提示信息。随机生成的文字、数字、字母、图形轨迹等，或前述项目的任一组合。\n\n[0086]步骤S45，获取用户在所述登录验证界面输入的验证信息，比较所述验证信息和所述验证提示信息，当所述验证信息和所述验证提示信息一致时，执行步骤S5。\n\n[0087]具体地，获取用户在所述登录验证界面输入的验证信息，比较所述验证信息和所述验证提示信息是否一致。当所述验证信息和所述验证提示信息一致时，用户成功登陆电子签批系统。可以理解，用户只有在成功登录电子签批系统后才能完成签核行为，从而保证电子签批的安全性。\n\n[0088]步骤S46，当所述验证信息和所述验证提示信息不一致时，生成及展示简略签核信息。\n\n[0089]具体地，当所述验证信息和所述验证提示信息不一致时，生成及展示简略签核信息。所述简略签核信息为包括电子签批主题、发起人或发起时间的文本、语音或图片等信息。此时，用户只能浏览电子签批系统内简略签核信息，但不能了解电子签批的具体内容，无法完成签核行为，从而保证电子签批的安全性。\n\n[0090]步骤S5，响应用户的签核请求，显示待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0091]具体地，可以理解，用户只有在成功登录电子签批系统后才能完成签核行为，本实施例中，成功登录电子签批系统包括两种方式。一种方式为用户输入的验证信息和所述电子签批系统生成的验证提示信息一致。另一方式为登录环境安全且用户输入的登录信息和服务器端存储的登录信息一致。换句话说，当所述登录环境安全及用户输入的登录信息和服务器端存储的登录信息一致，或用户输入的验证信息和所述电子签批系统生成的验证提示信息一致时，表示用户成功登录电子签批系统，用户可以完成签核行为。响应用户的签核请求，显示电子签批发起人上传的待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0092]实施例3\n\n[0093]图3示出了本发明实施例提供的一种电子签批用户管理系统的结构示意图。如图3所示，本发明实施例提供的一种电子签批用户管理系统100，包括存储器10、处理器20、检测单元30、登录单元40、验证单元50和签核单元60。\n\n[0094]检测单元30用于响应用户的登录请求，检测所述电子签批的登录环境是否安全。本实施例中，检测单元30包括监测模块31和判断模块32。\n\n[0095]监测模块31用于响应用户的登录请求，监测当前登录环境。\n\n[0096]具体地，处理器20响应用户的登录请求，控制监测模块31监测用户当前登录环境，获取当前登录环境的属性信息。所述属性信息包括当前登录环境的网络接入信息，及当前登录终端的IP地址或硬件识别码等。所述网络包括需要认证和不需要认证的免费无线网络。\n\n[0097]判断模块32用于判断监测到的所述登录环境是否满足存储器10存储的风险条件。\n\n[0098]具体地，处理器20响应用户的登录请求，获取存储器10存储的一风险条件。所述风险条件包括安全网络信息，或该用户的历史登录信息等。所述历史登录信息包括该用户近期登录时间及登录终端的IP地址或硬件识别码等。处理器20控制判断模块32判断监测到的所述登录环境是否满足所述风险条件。当所述登录环境满足所述风险条件时，表示所述登录环境安全；反之，表示所述登录环境不安全。\n\n[0099]进一步地，处理器20控制判断模块32比较所述登录环境的属性信息与所述风险条件是否匹配，当所述属性信息与所述风险条件匹配时，表示所述登录环境安全；反之，表示所述登录环境不安全。具体地，处理器20控制判断模块32比较当前登录环境的网络接入信息与所述安全网络信息是否匹配，从而判断当前登录环境是否存在病毒、木马等及存在病毒、木马等的可能性。处理器20控制判断模块32比较当前登录终端的IP地址或硬件识别码与该用户的历史登录信息是否匹配，从而判断当前登录环境是否为在用户常用登陆终端的登录或异地登录。当然，检测登录环境是否安全的方式还有很多，这里不再一一赘述。\n\n[0100]登录单元40用于获取及比较用户输入的登录信息和存储器10存储的该用户的登录信息。本实施例中，登录单元40包括获取模块41、第一比较模块42和第一提示模块43。\n\n[0101]获取模块41用于获取用户输入的登录信息。\n\n[0102]具体地，当所述登录环境安全时，处理器20控制获取模块41显示登录界面，及获取用户在所述登录界面输入的登录信息。所述登录界面包括登录信息输入框等。所述登录信息可以是用户名和密码等。\n\n[0103]进一步地，当所述登录环境不安全时，处理器20控制获取模块41显示登录验证界面，及获取用户在所述登录验证界面输入的登录信息。所述登录验证界面包括登录信息输入框和验证信息输入框等。\n\n[0104]第一比较模块42用于比较所述输入的登录信息和所述存储的该用户的登录信息。\n\n[0105]具体地，处理器20控制第一比较模块42比较用户输入的登录信息和存储器10存储的该用户的登录信息是否一致。存储器10存储的该用户的登录信息为用户注册电子签批系统时预留的用户名、密码等信息。\n\n[0106]第一提示模块43用于当所述输入的登录信息和所述存储的登录信息不一致时，生成及展示登录失败信息。\n\n[0107]具体地，当用户输入的登录信息和存储器10存储的登录信息不一致时，处理器20控制第一提示模块43生成及展示登录失败信息。所述登录失败信息为用于提示用户名或密码不存在或错误的文本、语音或图片等信息。此时，用户无法浏览电子签批系统内任何信息，无法完成签核行为，从而保证电子签批的安全性。\n\n[0108]验证单元50用于当所述登录环境不安全时，随机生成及展示验证提示信息，获取及比较用户输入的验证信息和所述验证提示信息。本实施例中，验证单元50包括验证模块51、第二比较模块52和第二提示模块53。\n\n[0109]验证模块51用于当所述输入的登录信息和所述存储的登录信息一致时，响应用户的验证请求，随机生成及展示所述验证提示信息。\n\n[0110]具体地，当所述输入的登录信息和所述存储的登录信息一致时，处理器20响应用户的验证请求，随机生成及展示所述验证提示信息。随机生成的文字、数字、字母、图形轨迹等，或前述项目的任一组合。\n\n[0111]第二比较模块52用于获取用户在所述登录验证界面输入的验证信息，比较所述验证信息和所述验证提示信息。\n\n[0112]具体地，处理器20控制第二比较模块52获取用户在所述登录验证界面输入的验证信息，及比较所述验证信息和所述验证提示信息是否一致。\n\n[0113]第二提示模块53用于当所述验证信息和所述验证提示信息不一致时，生成及展示简略签核信息。\n\n[0114]具体地，当所述验证信息和所述验证提示信息不一致时，处理器20控制第二提示模块53生成及展示简略签核信息。所述简略签核信息为包括电子签批主题、发起人或发起时间的文本、语音或图片等信息。此时，用户只能浏览电子签批系统内简略签核信息，但不能了解电子签批的具体内容，无法完成签核行为，从而保证电子签批的安全性\n\n[0115]签核单元60用于响应用户的签核请求，显示待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0116]具体地，当所述登录环境安全及用户输入的登录信息和存储器10存储的登录信息一致，或所述验证信息和所述验证提示信息一致时，处理器20控制签核单元60响应用户的签核请求，显示电子签批发起人上传的待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0117]本发明实施例提供的电子签批用户管理方法及系统，自动检测当前登录环境是否安全，当登录环境不安全时提示用户进行信息验证，用户只有验证通过才能完成签核行为，从而保证电子签批的安全性，避免非法分子对重要信息的窃取，对用户造成不必要的损失。\n\n[0118]本发明实施例所提供的系统，其实现原理及产生的技术效果和前述方法实施例相同，为简要描述，系统实施例部分未提及之处，可参考前述方法实施例中相应内容。\n\n[0119]在这里示出和描述的所有示例中，任何具体值应被解释为仅仅是示例性的，而不是为限制，因此，示例性实施例的其他示例可以具有不同的值。应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。\n\n[0120]在本申请所提供的几个实施例中，应该理解到，所揭露的装置可以通过其它的方式实现。以上所描述的装置实施例仅仅是示意性的，例如，所述单元的划分，仅仅为一种逻辑功能划分，实际实现时可以有另外的划分方式，又例如，多个单元或组件可以结合或者可以集成到另一个系统，或一些特征可以忽略，或不执行。另一点，所显示或讨论的相互之间的耦合或直接耦合或通信连接可以是通过一些通信接口，装置或单元的间接耦合或通信连接，可以是电性，机械或其它的形式。\n\n[0121]所述为分离部件说明的单元可以是或者也可以不是物理上分开的，为单元显示的部件可以是或者也可以不是物理单元，即可以位于一个地方，或者也可以分布到多个网络单元上。可以根据实际的需要选择其中的部分或者全部单元来实现本实施例方案的目的。\n\n[0122]另外，在本发明各个实施例中的各功能单元可以集成在一个处理单元中，也可以是各个单元单独物理存在，也可以两个或两个以上单元集成在一个单元中。\n\n[0123]以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应所述以权利要求的保护范围为准。\n\n', '技术领域\n\n[0001]本发明涉及电子签批技术领域，具体而言，涉及一种电子签批用户管理方法及系统。\n\n背景技术\n\n[0002]对于公司内部签批流程，通常需要将待签批文件打印出来，然后给到各个签批人处进行签批签字盖章。这样的签批流程较为繁琐，工作效率低下。由此，电子签批应运而生。近年来，电子签批在企业流程、行业应用、移动支付和个人信息安全等各种场景中得到越来越多的应用。\n\n[0003]但现有的电子签批大多通过公共网络传输签批文件，对签批文件的签核缺乏保护机制。对于企业来说，企业的财政开支状况、项目申请及研发文档等都是非常机密的材料，一些不法的竞争者经常通过技术手段窃取机密，使受害者遭受巨大的经济损失。\n\n发明内容\n\n[0004]本发明正是基于上述问题，提出了一种对签批文件具有保护机制的电子签批用户管理方法及系统。\n\n[0005]有鉴于此，本发明一方面提出了一种电子签批用户管理方法，包括：\n\n[0006]响应用户的登录请求，检测所述电子签批的登录环境是否安全；\n\n[0007]当所述登录环境不安全时，随机生成及展示验证提示信息，获取及比较用户输入的验证信息和所述验证提示信息；\n\n[0008]当所述登录环境安全，或所述验证信息和所述验证提示信息一致时，响应用户的签核请求，显示待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0009]进一步地，步骤“响应用户的登录请求，检测所述电子签批的登录环境是否安全”包括：\n\n[0010]响应用户的登录请求，监测当前登录环境；\n\n[0011]判断监测到的所述登录环境是否满足服务器端预设的风险条件；\n\n[0012]当所述登录环境满足所述风险条件时，所述登录环境安全；反之，所述登录环境不安全。\n\n[0013]进一步地，步骤“当所述登录环境不安全时，随机生成及展示验证提示信息，获取及比较用户输入的验证信息和所述验证提示信息”包括：\n\n[0014]当所述登录环境不安全时，显示登录验证界面，获取用户在所述登录验证界面输入的登录信息；\n\n[0015]比较所述输入的登录信息和服务器端存储的该用户的登录信息；\n\n[0016]当所述输入的登录信息和所述存储的登录信息不一致时，生成及展示登录失败信息；\n\n[0017]当所述输入的登录信息和所述存储的登录信息一致时，响应用户的验证请求，随机生成及展示所述验证提示信息；\n\n[0018]获取用户在所述登录验证界面输入的验证信息，比较所述验证信息和所述验证提示信息。\n\n[0019]进一步地，步骤“当所述登录环境安全时，响应用户的签核请求，显示待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件”还包括：\n\n[0020]当所述登录环境安全时，显示登录界面，获取用户在所述登录界面输入的登录信息；\n\n[0021]比较所述输入的登录信息和服务器端存储的该用户的登录信息；\n\n[0022]当所述输入的登录信息和所述存储的登录信息不一致时，生成及展示登录失败信息；\n\n[0023]当所述输入的登录信息和所述存储的登录信息一致时，响应用户的签核请求，显示待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0024]进一步地，还包括：当所述验证信息和所述验证提示信息不一致时，生成及展示简略签核信息。\n\n[0025]本发明另一方面还提供了一种电子签批用户管理系统，包括检测单元、验证单元和签核单元。\n\n[0026]所述检测单元，用于响应用户的登录请求，检测所述电子签批的登录环境是否安全。\n\n[0027]所述验证单元，用于当所述登录环境不安全时，随机生成及展示验证提示信息，获取及比较用户输入的验证信息和所述验证提示信息。\n\n[0028]所述签核单元，用于当所述登录环境安全，或所述验证信息和所述验证提示信息一致时，响应用户的签核请求，显示待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0029]进一步地，所述电子签批用户管理系统还包括存储器，所述检测单元包括监测模块和判断模块。\n\n[0030]所述监测模块，用于响应用户的登录请求，监测当前登录环境。\n\n[0031]所述判断模块，用于判断监测到的所述登录环境是否满足所述存储器存储的风险条件。\n\n[0032]进一步地，所述电子签批用户管理系统还包括存储器、处理器和登录单元，所述登录单元包括获取模块、第一比较模块和第一提示模块。\n\n[0033]所述处理器，用于当所述登录环境安全时，显示登录界面，控制所述获取模块获取用户在所述登录界面输入的登录信息，或当所述登录环境不安全时，显示登录验证界面，控制所述获取模块获取用户在所述登录验证界面输入的登录信息。\n\n[0034]所述第一比较模块，用于比较所述输入的登录信息和所述存储器存储的该用户的登录信息。\n\n[0035]所述第一提示模块，用于当所述输入的登录信息和所述存储的登录信息不一致时，生成及展示登录失败信息。\n\n[0036]进一步地，所述验证单元包括验证模块、第二比较模块和第二提示模块。\n\n[0037]所述验证模块，用于当所述输入的登录信息和所述存储的登录信息一致时，响应用户的验证请求，随机生成及展示所述验证提示信息。\n\n[0038]所述第二比较模块，用于获取用户在所述登录验证界面输入的验证信息，比较所述验证信息和所述验证提示信息。\n\n[0039]所述第二提示模块，用于当所述验证信息和所述验证提示信息不一致时，生成及展示简略签核信息。\n\n[0040]进一步地，所述电子签批用户管理系统还包括处理器，\n\n[0041]所述处理器，用于当所述登录环境安全及所述输入的登录信息和所述存储的登录信息一致，或所述验证信息和所述验证提示信息一致时，控制签核单元响应用户的签核请求，显示所述待签核文件，响应用户对所述待签核文件的签核操作，生成所述已签核文件。\n\n[0042]本发明实施例提供的电子签批用户管理方法及系统，自动检测当前登录环境是否安全，当登录环境不安全时提示用户进行信息验证，用户只有验证通过才能完成签核行为，从而保证电子签批的安全性，避免非法分子对重要信息的窃取，对用户造成不必要的损失。\n\n[0043]为使本发明的上述目的、特征和优点能更明显易懂，下文特举较佳实施例，并配合所附附图，作详细说明如下。\n\n附图说明\n\n[0044]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0045]图1示出了本发明实施例提供的一种电子签批用户管理方法的第一流程示意图；\n\n[0046]图2示出了本发明实施例提供的一种电子签批用户管理方法的第二流程示意图；\n\n[0047]图3示出了本发明实施例提供的一种电子签批用户管理系统的结构示意图。\n\n[0048]主要元件符号说明：\n\n[0049]100-电子签批用户管理系统；10-存储器；20-处理器；30-检测单元；31-监测模块；32-判断模块；40-登录单元；41-获取模块；42-第一比较模块；43-第一提示模块；50-验证单元；51-验证模块；52-第二比较模块；53-第二提示模块；60-签核单元。\n\n具体实施方式\n\n[0050]为了便于理解本发明，下面将参照相关附图对电子签批用户管理方法及系统进行更清楚、完整地描述。附图中给出了电子签批用户管理方法及系统的优选实施例。电子签批用户管理方法及系统可以通过许多不同的形式来实现，并不限于本文所描述的实施例。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0051]实施例1\n\n[0052]图1示出了本发明实施例提供的一种电子签批用户管理方法的流程示意图。如图1所示，本发明实施例提供的电子签批用户管理方法，包括：\n\n[0053]步骤S10，响应用户的登录请求，检测所述电子签批的登录环境是否安全。\n\n[0054]具体地，响应用户的登录请求，监测用户当前登录环境，获取当前登录环境的属性信息。所述属性信息包括当前登录环境的网络接入信息，及当前登录终端的IP地址或硬件识别码等。所述网络包括需要认证和不需要认证的免费无线网络。\n\n[0055]进一步地，获取服务器端存储的一风险条件，所述风险条件包括安全网络信息，或该用户的历史登录信息等。所述历史登录信息包括该用户近期登录时间及登录终端的IP地址或硬件识别码等。判断监测到的所述登录环境是否满足服务器端预设的风险条件，当所述登录环境满足所述风险条件时，表示所述登录环境安全；反之，表示所述登录环境不安全。\n\n[0056]进一步地，比较所述登录环境的属性信息与所述风险条件是否匹配，当所述属性信息与所述风险条件匹配时，表示所述登录环境安全；反之，表示所述登录环境不安全。具体地，比较当前登录环境的网络接入信息与所述安全网络信息是否匹配，从而判断当前登录环境是否存在病毒、木马等及存在病毒、木马等的可能性；比较当前登录终端的IP地址或硬件识别码与该用户的历史登录信息是否匹配，从而判断当前登录环境是否为在用户常用登陆终端的登录或异地登录。当然，检测登录环境是否安全的方式还有很多，这里不再一一赘述。\n\n[0057]步骤S20，当所述登录环境不安全时，随机生成及展示验证提示信息，获取及比较用户输入的验证信息和所述验证提示信息。\n\n[0058]具体地，当所述登录环境不安全时，显示登录验证界面。所述登录验证界面包括登录信息输入框和验证信息输入框等。获取用户在所述登录验证界面输入的登录信息。所述登录信息可以是用户名和密码等。比较所述输入的登录信息和服务器端存储的该用户的登录信息。所述服务器端存储的该用户的登录信息为用户注册电子签批系统时预留的用户名、密码等信息。\n\n[0059]进一步地，当用户输入的登录信息和服务器端存储的登录信息不一致时，生成及展示登录失败信息。所述登录失败信息为用于提示用户名或密码不存在或错误的文本、语音或图片等信息。此时，用户无法浏览电子签批系统内任何信息，无法完成签核行为，从而保证电子签批的安全性。\n\n[0060]进一步地，当用户输入的登录信息和服务器端存储的登录信息一致时，响应用户的验证请求，随机生成及展示所述验证提示信息。所述验证提示信息为随机生成的文字、数字、字母、图形轨迹等，或前述项目的任一组合。获取用户在所述登录验证界面输入的验证信息，比较所述验证信息和所述验证提示信息。当所述验证信息和所述验证提示信息不一致时，生成及展示简略签核信息。所述简略签核信息为包括电子签批主题、发起人或发起时间的文本、语音或图片等信息。此时，用户只能浏览电子签批系统内简略签核信息，但不能了解电子签批的具体内容，无法完成签核行为，从而保证电子签批的安全性。\n\n[0061]步骤S30，当所述登录环境安全，或所述验证信息和所述验证提示信息一致时，响应用户的签核请求，显示待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0062]具体地，可以理解，用户只有在成功登录电子签批系统后才能完成签核行为，本实施例中，成功登录电子签批系统包括两种方式。一种方式为用户输入的验证信息和所述电子签批系统生成的验证提示信息一致。另一方式为登录环境安全且用户输入的登录信息和服务器端存储的登录信息一致。\n\n[0063]进一步地，当所述登录环境安全时，显示登录界面。所述登录界面包括用户登录信息输入框等。获取用户在所述登录界面输入的登录信息。比较所述输入的登录信息和服务器端存储的该用户的登录信息。当用户输入的登录信息和服务器端存储的登录信息不一致时，生成及展示登录失败信息。当用户输入的登录信息和服务器端存储的登录信息一致时，表示用户成功登录电子签批系统，用户可以完成签核行为。响应用户的签核请求，显示电子签批发起人上传的待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0064]进一步地，当用户输入的验证信息和所述电子签批系统生成的验证提示信息一致时，表示用户成功登录电子签批系统，用户可以完成签核行为。响应用户的签核请求，显示电子签批发起人上传的待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0065]实施例2\n\n[0066]图2示出了本发明实施例提供的一种电子签批用户管理方法的流程示意图。如图2所示，本发明实施例提供的电子签批用户管理方法，包括：\n\n[0067]步骤S1，响应用户的登录请求，监测当前登录环境。\n\n[0068]具体地，响应用户的登录请求，监测用户当前登录环境，获取当前登录环境的属性信息。所述属性信息包括当前登录环境的网络接入信息，及当前登录终端的IP地址或硬件识别码等。所述网络包括需要认证和不需要认证的免费无线网络。\n\n[0069]步骤S2，判断监测到的所述登录环境是否满足服务器端预设的风险条件，当所述登录环境满足所述风险条件时，执行步骤S31；反之，执行步骤S41。\n\n[0070]具体地，获取服务器端存储的一风险条件，所述风险条件包括安全网络信息，或该用户的历史登录信息等。所述历史登录信息包括该用户近期登录时间及登录终端的IP地址或硬件识别码等。判断监测到的所述登录环境是否满足服务器端预设的风险条件，当所述登录环境满足所述风险条件时，表示所述登录环境安全；反之，表示所述登录环境不安全。\n\n[0071]进一步地，比较所述登录环境的属性信息与所述风险条件是否匹配，当所述属性信息与所述风险条件匹配时，表示所述登录环境安全；反之，表示所述登录环境不安全。具体地，比较当前登录环境的网络接入信息与所述安全网络信息是否匹配，从而判断当前登录环境是否存在病毒、木马等，及存在病毒、木马等的可能性；比较当前登录终端的IP地址或硬件识别码与该用户的历史登录信息是否匹配，从而判断当前登录环境是否为在用户常用登陆终端的登录或异地登录。当然，检测登录环境是否安全的方式还有很多，在此不再一一赘述。\n\n[0072]步骤S31，当所述登录环境安全时，显示登录界面，获取用户在所述登录界面输入的登录信息。\n\n[0073]具体地，当所述登录环境安全时，显示登录界面。所述登录界面包括登录信息输入框等。获取用户在所述登录界面输入的登录信息。所述登录信息可以是用户名和密码等。\n\n[0074]步骤S32，比较所述输入的登录信息和服务器端存储的该用户的登录信息，当所述输入的登录信息和所述存储的登录信息一致时，执行步骤S5。\n\n[0075]具体地，比较用户输入的登录信息和服务器端存储的该用户的登录信息。所述服务器端存储的该用户的登录信息为用户注册电子签批系统时预留的用户名、密码等信息。当所述输入的登录信息和所述存储的登录信息一致时，用户成功登陆电子签批系统。可以理解，用户只有在成功登录电子签批系统后才能完成签核行为，从而保证电子签批的安全性。\n\n[0076]步骤S33，当所述输入的登录信息和所述存储的登录信息不一致时，生成及展示登录失败信息。\n\n[0077]具体地地，所述登录失败信息为用于提示用户名或密码不存在或错误的文本、语音或图片等信息。此时，用户无法浏览电子签批系统内任何信息，无法完成签核行为，从而保证电子签批的安全性。\n\n[0078]步骤S41，当所述登录环境不安全时，显示登录验证界面，获取用户在所述登录验证界面输入的登录信息。\n\n[0079]具体地，当所述登录环境不安全时，显示登录验证界面。所述登录验证界面包括登录信息输入框和验证信息输入框等。获取用户在所述登录验证界面输入的登录信息。所述登录信息可以是用户名和密码等。\n\n[0080]步骤S42，比较所述输入的登录信息和服务器端存储的该用户的登录信息。\n\n[0081]具体地，比较所述输入的登录信息和服务器端存储的该用户的登录信息。所述服务器端存储的该用户的登录信息为用户注册电子签批系统时预留的用户名、密码等信息。\n\n[0082]步骤S43，当所述输入的登录信息和所述存储的登录信息不一致时，生成及展示登录失败信息。\n\n[0083]具体地，所述登录失败信息为用于提示用户名或密码不存在或错误的文本、语音或图片等信息。此时，用户无法浏览电子签批系统内任何信息，无法完成签核行为，从而保证电子签批的安全性。\n\n[0084]步骤S44，当所述输入的登录信息和所述存储的登录信息一致时，响应用户的验证请求，随机生成及展示所述验证提示信息。\n\n[0085]具体地，当所述输入的登录信息和所述存储的登录信息一致时，表示用户输入的登录信息正确。但由于当前登陆环境不安全，为了保证电子签核的安全性，仍需进一步地认证才能进行签核行为。响应用户的验证请求，随机生成及展示所述验证提示信息。随机生成的文字、数字、字母、图形轨迹等，或前述项目的任一组合。\n\n[0086]步骤S45，获取用户在所述登录验证界面输入的验证信息，比较所述验证信息和所述验证提示信息，当所述验证信息和所述验证提示信息一致时，执行步骤S5。\n\n[0087]具体地，获取用户在所述登录验证界面输入的验证信息，比较所述验证信息和所述验证提示信息是否一致。当所述验证信息和所述验证提示信息一致时，用户成功登陆电子签批系统。可以理解，用户只有在成功登录电子签批系统后才能完成签核行为，从而保证电子签批的安全性。\n\n[0088]步骤S46，当所述验证信息和所述验证提示信息不一致时，生成及展示简略签核信息。\n\n[0089]具体地，当所述验证信息和所述验证提示信息不一致时，生成及展示简略签核信息。所述简略签核信息为包括电子签批主题、发起人或发起时间的文本、语音或图片等信息。此时，用户只能浏览电子签批系统内简略签核信息，但不能了解电子签批的具体内容，无法完成签核行为，从而保证电子签批的安全性。\n\n[0090]步骤S5，响应用户的签核请求，显示待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0091]具体地，可以理解，用户只有在成功登录电子签批系统后才能完成签核行为，本实施例中，成功登录电子签批系统包括两种方式。一种方式为用户输入的验证信息和所述电子签批系统生成的验证提示信息一致。另一方式为登录环境安全且用户输入的登录信息和服务器端存储的登录信息一致。换句话说，当所述登录环境安全及用户输入的登录信息和服务器端存储的登录信息一致，或用户输入的验证信息和所述电子签批系统生成的验证提示信息一致时，表示用户成功登录电子签批系统，用户可以完成签核行为。响应用户的签核请求，显示电子签批发起人上传的待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0092]实施例3\n\n[0093]图3示出了本发明实施例提供的一种电子签批用户管理系统的结构示意图。如图3所示，本发明实施例提供的一种电子签批用户管理系统100，包括存储器10、处理器20、检测单元30、登录单元40、验证单元50和签核单元60。\n\n[0094]检测单元30用于响应用户的登录请求，检测所述电子签批的登录环境是否安全。本实施例中，检测单元30包括监测模块31和判断模块32。\n\n[0095]监测模块31用于响应用户的登录请求，监测当前登录环境。\n\n[0096]具体地，处理器20响应用户的登录请求，控制监测模块31监测用户当前登录环境，获取当前登录环境的属性信息。所述属性信息包括当前登录环境的网络接入信息，及当前登录终端的IP地址或硬件识别码等。所述网络包括需要认证和不需要认证的免费无线网络。\n\n[0097]判断模块32用于判断监测到的所述登录环境是否满足存储器10存储的风险条件。\n\n[0098]具体地，处理器20响应用户的登录请求，获取存储器10存储的一风险条件。所述风险条件包括安全网络信息，或该用户的历史登录信息等。所述历史登录信息包括该用户近期登录时间及登录终端的IP地址或硬件识别码等。处理器20控制判断模块32判断监测到的所述登录环境是否满足所述风险条件。当所述登录环境满足所述风险条件时，表示所述登录环境安全；反之，表示所述登录环境不安全。\n\n[0099]进一步地，处理器20控制判断模块32比较所述登录环境的属性信息与所述风险条件是否匹配，当所述属性信息与所述风险条件匹配时，表示所述登录环境安全；反之，表示所述登录环境不安全。具体地，处理器20控制判断模块32比较当前登录环境的网络接入信息与所述安全网络信息是否匹配，从而判断当前登录环境是否存在病毒、木马等及存在病毒、木马等的可能性。处理器20控制判断模块32比较当前登录终端的IP地址或硬件识别码与该用户的历史登录信息是否匹配，从而判断当前登录环境是否为在用户常用登陆终端的登录或异地登录。当然，检测登录环境是否安全的方式还有很多，这里不再一一赘述。\n\n[0100]登录单元40用于获取及比较用户输入的登录信息和存储器10存储的该用户的登录信息。本实施例中，登录单元40包括获取模块41、第一比较模块42和第一提示模块43。\n\n[0101]获取模块41用于获取用户输入的登录信息。\n\n[0102]具体地，当所述登录环境安全时，处理器20控制获取模块41显示登录界面，及获取用户在所述登录界面输入的登录信息。所述登录界面包括登录信息输入框等。所述登录信息可以是用户名和密码等。\n\n[0103]进一步地，当所述登录环境不安全时，处理器20控制获取模块41显示登录验证界面，及获取用户在所述登录验证界面输入的登录信息。所述登录验证界面包括登录信息输入框和验证信息输入框等。\n\n[0104]第一比较模块42用于比较所述输入的登录信息和所述存储的该用户的登录信息。\n\n[0105]具体地，处理器20控制第一比较模块42比较用户输入的登录信息和存储器10存储的该用户的登录信息是否一致。存储器10存储的该用户的登录信息为用户注册电子签批系统时预留的用户名、密码等信息。\n\n[0106]第一提示模块43用于当所述输入的登录信息和所述存储的登录信息不一致时，生成及展示登录失败信息。\n\n[0107]具体地，当用户输入的登录信息和存储器10存储的登录信息不一致时，处理器20控制第一提示模块43生成及展示登录失败信息。所述登录失败信息为用于提示用户名或密码不存在或错误的文本、语音或图片等信息。此时，用户无法浏览电子签批系统内任何信息，无法完成签核行为，从而保证电子签批的安全性。\n\n[0108]验证单元50用于当所述登录环境不安全时，随机生成及展示验证提示信息，获取及比较用户输入的验证信息和所述验证提示信息。本实施例中，验证单元50包括验证模块51、第二比较模块52和第二提示模块53。\n\n[0109]验证模块51用于当所述输入的登录信息和所述存储的登录信息一致时，响应用户的验证请求，随机生成及展示所述验证提示信息。\n\n[0110]具体地，当所述输入的登录信息和所述存储的登录信息一致时，处理器20响应用户的验证请求，随机生成及展示所述验证提示信息。随机生成的文字、数字、字母、图形轨迹等，或前述项目的任一组合。\n\n[0111]第二比较模块52用于获取用户在所述登录验证界面输入的验证信息，比较所述验证信息和所述验证提示信息。\n\n[0112]具体地，处理器20控制第二比较模块52获取用户在所述登录验证界面输入的验证信息，及比较所述验证信息和所述验证提示信息是否一致。\n\n[0113]第二提示模块53用于当所述验证信息和所述验证提示信息不一致时，生成及展示简略签核信息。\n\n[0114]具体地，当所述验证信息和所述验证提示信息不一致时，处理器20控制第二提示模块53生成及展示简略签核信息。所述简略签核信息为包括电子签批主题、发起人或发起时间的文本、语音或图片等信息。此时，用户只能浏览电子签批系统内简略签核信息，但不能了解电子签批的具体内容，无法完成签核行为，从而保证电子签批的安全性\n\n[0115]签核单元60用于响应用户的签核请求，显示待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0116]具体地，当所述登录环境安全及用户输入的登录信息和存储器10存储的登录信息一致，或所述验证信息和所述验证提示信息一致时，处理器20控制签核单元60响应用户的签核请求，显示电子签批发起人上传的待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0117]本发明实施例提供的电子签批用户管理方法及系统，自动检测当前登录环境是否安全，当登录环境不安全时提示用户进行信息验证，用户只有验证通过才能完成签核行为，从而保证电子签批的安全性，避免非法分子对重要信息的窃取，对用户造成不必要的损失。\n\n[0118]本发明实施例所提供的系统，其实现原理及产生的技术效果和前述方法实施例相同，为简要描述，系统实施例部分未提及之处，可参考前述方法实施例中相应内容。\n\n[0119]在这里示出和描述的所有示例中，任何具体值应被解释为仅仅是示例性的，而不是为限制，因此，示例性实施例的其他示例可以具有不同的值。应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。\n\n[0120]在本申请所提供的几个实施例中，应该理解到，所揭露的装置可以通过其它的方式实现。以上所描述的装置实施例仅仅是示意性的，例如，所述单元的划分，仅仅为一种逻辑功能划分，实际实现时可以有另外的划分方式，又例如，多个单元或组件可以结合或者可以集成到另一个系统，或一些特征可以忽略，或不执行。另一点，所显示或讨论的相互之间的耦合或直接耦合或通信连接可以是通过一些通信接口，装置或单元的间接耦合或通信连接，可以是电性，机械或其它的形式。\n\n[0121]所述为分离部件说明的单元可以是或者也可以不是物理上分开的，为单元显示的部件可以是或者也可以不是物理单元，即可以位于一个地方，或者也可以分布到多个网络单元上。可以根据实际的需要选择其中的部分或者全部单元来实现本实施例方案的目的。\n\n[0122]另外，在本发明各个实施例中的各功能单元可以集成在一个处理单元中，也可以是各个单元单独物理存在，也可以两个或两个以上单元集成在一个单元中。\n\n[0123]以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应所述以权利要求的保护范围为准。\n\n');
INSERT INTO `os_patent_instruction_text` VALUES (11149, 24087, '技术领域\n\n[0001]本发明涉及电子签批技术领域，具体而言，涉及一种电子签批用户管理方法及系统。\n\n背景技术\n\n[0002]对于公司内部签批流程，通常需要将待签批文件打印出来，然后给到各个签批人处进行签批签字盖章。这样的签批流程较为繁琐，工作效率低下。由此，电子签批应运而生。近年来，电子签批在企业流程、行业应用、移动支付和个人信息安全等各种场景中得到越来越多的应用。\n\n[0003]但现有的电子签批大多通过公共网络传输签批文件，对签批文件的签核缺乏保护机制。对于企业来说，企业的财政开支状况、项目申请及研发文档等都是非常机密的材料，一些不法的竞争者经常通过技术手段窃取机密，使受害者遭受巨大的经济损失。\n\n发明内容\n\n[0004]本发明正是基于上述问题，提出了一种对签批文件具有保护机制的电子签批用户管理方法及系统。\n\n[0005]有鉴于此，本发明一方面提出了一种电子签批用户管理方法，包括：\n\n[0006]响应用户的登录请求，检测所述电子签批的登录环境是否安全；\n\n[0007]当所述登录环境不安全时，获取及比较用户的识别信息和服务器端存储的该用户的识别信息；\n\n[0008]当所述登录环境安全，或所述获取的识别信息和所述存储的识别信息一致时，响应用户的签核请求，显示待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0009]进一步地，步骤“响应用户的登录请求，检测所述电子签批的登录环境是否安全”包括：\n\n[0010]响应用户的登录请求，监测当前登录环境；\n\n[0011]判断监测到的所述登录环境是否满足服务器端预设的风险条件；\n\n[0012]当所述登录环境满足所述风险条件时，所述登录环境安全；反之，所述登录环境不安全。\n\n[0013]进一步地，步骤“当所述登录环境不安全时，获取及比较用户的识别信息和服务器端存储的该用户的识别信息”包括：\n\n[0014]当所述登录环境不安全时，显示登录验证界面，获取用户在所述登录验证界面输入的登录信息；\n\n[0015]比较所述输入的登录信息和服务器端存储的该用户的登录信息；\n\n[0016]当所述输入的登录信息和所述存储的登录信息不一致时，生成及展示登录失败信息；\n\n[0017]当所述输入的登录信息和所述存储的登录信息一致时，响应用户的验证请求，获取及比较用户的识别信息和所述服务器端存储的该用户的识别信息。\n\n[0018]进一步地，步骤“当所述登录环境安全时，响应用户的签核请求，显示待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件”还包括：\n\n[0019]当所述登录环境安全时，显示登录界面，获取用户在所述登录界面输入的登录信息；\n\n[0020]比较所述输入的登录信息和服务器端存储的该用户的登录信息；\n\n[0021]当所述输入的登录信息和所述存储的登录信息不一致时，生成及展示登录失败信息；\n\n[0022]当所述输入的登录信息和所述存储的登录信息一致时，响应用户的签核请求，显示待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0023]进一步地，还包括：当所述获取的识别信息和所述存储的识别信息不一致时，生成及展示简略签核信息。\n\n[0024]本发明另一方面还提供了一种电子签批用户管理系统，包括存储器、检测单元、验证单元和签核单元。\n\n[0025]所述检测单元，用于响应用户的登录请求，检测所述电子签批的登录环境是否安全。\n\n[0026]所述验证单元，用于当所述登录环境不安全时，获取及比较用户的识别信息和所述存储器存储的该用户的识别信息。\n\n[0027]所述签核单元，用于当所述登录环境安全，或所述获取的识别信息和所述存储的识别信息一致时，响应用户的签核请求，显示待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0028]进一步地，所述检测单元包括监测模块和判断模块。\n\n[0029]所述监测模块，用于响应用户的登录请求，监测当前登录环境。\n\n[0030]所述判断模块，用于判断监测到的所述登录环境是否满足所述存储器存储的风险条件。\n\n[0031]进一步地，所述电子签批用户管理系统还包括存储器、处理器和登录单元，所述登录单元包括第一获取模块、第一比较模块和第一提示模块。\n\n[0032]所述处理器，用于当所述登录环境安全时，显示登录界面，控制所述第一获取模块获取用户在所述登录界面输入的登录信息，或当所述登录环境不安全时，显示登录验证界面，控制所述第一获取模块获取用户在所述登录验证界面输入的登录信息。\n\n[0033]所述第一比较模块，用于比较所述输入的登录信息和所述存储器存储的该用户的登录信息。\n\n[0034]所述第一提示模块，用于当所述输入的登录信息和所述存储的登录信息不一致时，生成及展示登录失败信息。\n\n[0035]进一步地，所述验证单元包括第二获取模块、第二比较模块和第二提示模块。\n\n[0036]所述第二获取模块，用于当所述输入的登录信息和所述存储的登录信息一致时，响应用户的验证请求，获取用户的识别信息。\n\n[0037]所述第二比较模块，用于比较所述获取的识别信息和所述存储器存储的该用户的识别信息。\n\n[0038]所述第二提示模块，用于当所述获取的识别信息和所述存储的识别信息不一致时，生成及展示简略签核信息。\n\n[0039]进一步地，所述电子签批用户管理系统还包括处理器，\n\n[0040]所述处理器，用于当所述登录环境安全及所述输入的登录信息和所述存储的登录信息一致，或所述获取的识别信息和所述存储的识别信息一致时，控制签核单元响应用户的签核请求，显示所述待签核文件，响应用户对所述待签核文件的签核操作，生成所述已签核文件。\n\n[0041]本发明实施例提供的电子签批用户管理方法及系统，自动检测当前登录环境是否安全，当登录环境不安全时提示用户进行信息验证，用户只有验证通过才能完成签核行为，从而保证电子签批的安全性，避免非法分子对重要信息的窃取，对用户造成不必要的损失。\n\n[0042]为使本发明的上述目的、特征和优点能更明显易懂，下文特举较佳实施例，并配合所附附图，作详细说明如下。\n\n附图说明\n\n[0043]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0044]图1示出了本发明实施例提供的一种电子签批用户管理方法的第一流程示意图；\n\n[0045]图2示出了本发明实施例提供的一种电子签批用户管理方法的第二流程示意图；\n\n[0046]图3示出了本发明实施例提供的一种电子签批用户管理系统的结构示意图。\n\n[0047]主要元件符号说明：\n\n[0048]100-电子签批用户管理系统；10-存储器；20-处理器；30-检测单元；31-监测模块；32-判断模块；40-登录单元；41-第一获取模块；42-第一比较模块；43-第一提示模块；50-验证单元；51-第二获取模块；52-第二比较模块；53-第二提示模块；60-签核单元。\n\n具体实施方式\n\n[0049]为了便于理解本发明，下面将参照相关附图对电子签批用户管理方法及系统进行更清楚、完整地描述。附图中给出了电子签批用户管理方法及系统的优选实施例。电子签批用户管理方法及系统可以通过许多不同的形式来实现，并不限于本文所描述的实施例。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0050]实施例1\n\n[0051]图1示出了本发明实施例提供的一种电子签批用户管理方法的流程示意图。如图1所示，本发明实施例提供的电子签批用户管理方法，包括：\n\n[0052]步骤S10，响应用户的登录请求，检测所述电子签批的登录环境是否安全。\n\n[0053]具体地，响应用户的登录请求，监测用户当前登录环境，获取当前登录环境的属性信息。所述属性信息包括当前登录环境的网络接入信息，及当前登录终端的IP地址或硬件识别码等。所述网络包括需要认证和不需要认证的免费无线网络。\n\n[0054]进一步地，获取服务器端存储的一风险条件，所述风险条件包括安全网络信息，或该用户的历史登录信息等。所述历史登录信息包括该用户近期登录时间及登录终端的IP地址或硬件识别码等。判断监测到的所述登录环境是否满足服务器端预设的风险条件，当所述登录环境满足所述风险条件时，表示所述登录环境安全；反之，表示所述登录环境不安全。\n\n[0055]进一步地，比较所述登录环境的属性信息与所述风险条件是否匹配，当所述属性信息与所述风险条件匹配时，表示所述登录环境安全；反之，表示所述登录环境不安全。具体地，比较当前登录环境的网络接入信息与所述安全网络信息是否匹配，从而判断当前登录环境是否存在病毒、木马等及存在病毒、木马等的可能性；比较当前登录终端的IP地址或硬件识别码与该用户的历史登录信息是否匹配，从而判断当前登录环境是否为在用户常用登陆终端的登录或异地登录。当然，检测登录环境是否安全的方式还有很多，这里不再一一赘述。\n\n[0056]步骤S20，当所述登录环境不安全时，获取及比较用户的识别信息和服务器端存储的该用户的识别信息。\n\n[0057]具体地，当所述登录环境不安全时，显示登录验证界面。所述登录验证界面包括登录信息输入框和验证信息输入框等。获取用户在所述登录验证界面输入的登录信息。所述登录信息可以是用户名和密码等。比较所述输入的登录信息和服务器端存储的该用户的登录信息。所述服务器端存储的该用户的登录信息为用户注册电子签批系统时预留的用户名、密码等信息。\n\n[0058]进一步地，当用户输入的登录信息和服务器端存储的登录信息不一致时，生成及展示登录失败信息。所述登录失败信息为用于提示用户名或密码不存在或错误的文本、语音或图片等信息。此时，用户无法浏览电子签批系统内任何信息，无法完成签核行为，从而保证电子签批的安全性。\n\n[0059]进一步地，当用户输入的登录信息和服务器端存储的登录信息一致时，响应用户的验证请求，获取用户的识别信息。所述识别信息为用户的指纹信息、录音信息、录像信息、手机或路由器等的硬件识别码或WIFI信息等。比较所述获取的识别信息和服务器端存储的该用户的识别信息。当所述获取的识别信息和服务器端存储的该用户的识别信息不一致时，生成及展示简略签核信息。所述简略签核信息为包括电子签批主题、发起人或发起时间的文本、语音或图片等信息。此时，用户只能浏览电子签批系统内简略签核信息，但不能了解电子签批的具体内容，无法完成签核行为，从而保证电子签批的安全性。\n\n[0060]步骤S30，当所述登录环境安全，或所述获取的识别信息和服务器端存储的该用户的识别信息一致时，响应用户的签核请求，显示待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0061]具体地，可以理解，用户只有在成功登录电子签批系统后才能完成签核行为，本实施例中，成功登录电子签批系统包括两种方式。一种方式为所述获取的识别信息和服务器端存储的该用户的识别信息一致。另一方式为登录环境安全且用户输入的登录信息和服务器端存储的登录信息一致。\n\n[0062]进一步地，当所述登录环境安全时，显示登录界面。所述登录界面包括用户登录信息输入框等。获取用户在所述登录界面输入的登录信息。比较所述输入的登录信息和服务器端存储的该用户的登录信息。当用户输入的登录信息和服务器端存储的登录信息不一致时，生成及展示登录失败信息。当用户输入的登录信息和服务器端存储的登录信息一致时，表示用户成功登录电子签批系统，用户可以完成签核行为。响应用户的签核请求，显示电子签批发起人上传的待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0063]进一步地，当获取的用户的识别信息和服务器端存储的该用户的识别信息一致时，表示用户成功登录电子签批系统，用户可以完成签核行为。响应用户的签核请求，显示电子签批发起人上传的待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0064]实施例2\n\n[0065]图2示出了本发明实施例提供的一种电子签批用户管理方法的流程示意图。如图2所示，本发明实施例提供的电子签批用户管理方法，包括：\n\n[0066]步骤S1，响应用户的登录请求，监测当前登录环境。\n\n[0067]具体地，响应用户的登录请求，监测用户当前登录环境，获取当前登录环境的属性信息。所述属性信息包括当前登录环境的网络接入信息，及当前登录终端的IP地址或硬件识别码等。所述网络包括需要认证和不需要认证的免费无线网络。\n\n[0068]步骤S2，判断监测到的所述登录环境是否满足服务器端预设的风险条件，当所述登录环境满足所述风险条件时，执行步骤S31；反之，执行步骤S41。\n\n[0069]具体地，获取服务器端存储的一风险条件，所述风险条件包括安全网络信息，或该用户的历史登录信息等。所述历史登录信息包括该用户近期登录时间及登录终端的IP地址或硬件识别码等。判断监测到的所述登录环境是否满足服务器端预设的风险条件，当所述登录环境满足所述风险条件时，表示所述登录环境安全；反之，表示所述登录环境不安全。\n\n[0070]进一步地，比较所述登录环境的属性信息与所述风险条件是否匹配，当所述属性信息与所述风险条件匹配时，表示所述登录环境安全；反之，表示所述登录环境不安全。具体地，比较当前登录环境的网络接入信息与所述安全网络信息是否匹配，从而判断当前登录环境是否存在病毒、木马等，及存在病毒、木马等的可能性；比较当前登录终端的IP地址或硬件识别码与该用户的历史登录信息是否匹配，从而判断当前登录环境是否为在用户常用登陆终端的登录或异地登录。当然，检测登录环境是否安全的方式还有很多，在此不再一一赘述。\n\n[0071]步骤S31，当所述登录环境安全时，显示登录界面，获取用户在所述登录界面输入的登录信息。\n\n[0072]具体地，当所述登录环境安全时，显示登录界面。所述登录界面包括登录信息输入框等。获取用户在所述登录界面输入的登录信息。所述登录信息可以是用户名和密码等。\n\n[0073]步骤S32，比较所述输入的登录信息和服务器端存储的该用户的登录信息，当所述输入的登录信息和所述存储的登录信息一致时，执行步骤S5。\n\n[0074]具体地，比较用户输入的登录信息和服务器端存储的该用户的登录信息。所述服务器端存储的该用户的登录信息为用户注册电子签批系统时预留的用户名、密码等信息。当所述输入的登录信息和所述存储的登录信息一致时，用户成功登陆电子签批系统。可以理解，用户只有在成功登录电子签批系统后才能完成签核行为，从而保证电子签批的安全性。\n\n[0075]步骤S33，当所述输入的登录信息和所述存储的登录信息不一致时，生成及展示登录失败信息。\n\n[0076]具体地地，所述登录失败信息为用于提示用户名或密码不存在或错误的文本、语音或图片等信息。此时，用户无法浏览电子签批系统内任何信息，无法完成签核行为，从而保证电子签批的安全性。\n\n[0077]步骤S41，当所述登录环境不安全时，显示登录验证界面，获取用户在所述登录验证界面输入的登录信息。\n\n[0078]具体地，当所述登录环境不安全时，显示登录验证界面。所述登录验证界面包括登录信息输入框和验证信息输入框等。获取用户在所述登录验证界面输入的登录信息。所述登录信息可以是用户名和密码等。\n\n[0079]步骤S42，比较所述输入的登录信息和服务器端存储的该用户的登录信息。\n\n[0080]具体地，比较所述输入的登录信息和服务器端存储的该用户的登录信息。所述服务器端存储的该用户的登录信息为用户注册电子签批系统时预留的用户名、密码等信息。\n\n[0081]步骤S43，当所述输入的登录信息和所述存储的登录信息不一致时，生成及展示登录失败信息。\n\n[0082]具体地，所述登录失败信息为用于提示用户名或密码不存在或错误的文本、语音或图片等信息。此时，用户无法浏览电子签批系统内任何信息，无法完成签核行为，从而保证电子签批的安全性。\n\n[0083]步骤S44，当所述输入的登录信息和所述存储的登录信息一致时，响应用户的验证请求，获取用户的识别信息。\n\n[0084]具体地，当所述输入的登录信息和所述存储的登录信息一致时，表示用户输入的登录信息正确。但由于当前登陆环境不安全，为了保证电子签核的安全性，仍需进一步地认证才能进行签核行为。响应用户的验证请求，获取用户的识别信息。所述识别信息为用户的指纹信息、录音信息、录像信息、手机或路由器等的硬件识别码或WIFI信息等。\n\n[0085]步骤S45，比较所述获取的识别信息和服务器端存储的该用户的识别信息，当所述获取的识别信息和服务器端存储的该用户的识别信息一致时，执行步骤S5。\n\n[0086]具体地，比较所述获取的识别信息和服务器端存储的该用户的识别信息是否一致。当所述获取的识别信息和服务器端存储的该用户的识别信息一致时，用户成功登陆电子签批系统。可以理解，用户只有在成功登录电子签批系统后才能完成签核行为，从而保证电子签批的安全性。\n\n[0087]步骤S46，当所述获取的识别信息和服务器端存储的该用户的识别信息不一致时，生成及展示简略签核信息。\n\n[0088]具体地，当所述获取的识别信息和服务器端存储的该用户的识别信息不一致时，生成及展示简略签核信息。所述简略签核信息为包括电子签批主题、发起人或发起时间的文本、语音或图片等信息。此时，用户只能浏览电子签批系统内简略签核信息，但不能了解电子签批的具体内容，无法完成签核行为，从而保证电子签批的安全性。\n\n[0089]步骤S5，响应用户的签核请求，显示待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0090]具体地，可以理解，用户只有在成功登录电子签批系统后才能完成签核行为，本实施例中，成功登录电子签批系统包括两种方式。一种方式为所述获取的用户的识别信息和服务器端存储的该用户的识别信息一致。另一方式为登录环境安全且用户输入的登录信息和服务器端存储的登录信息一致。换句话说，当所述登录环境安全及用户输入的登录信息和服务器端存储的登录信息一致，或所述获取的用户的识别信息和服务器端存储的该用户的识别信息一致时，表示用户成功登录电子签批系统，用户可以完成签核行为。响应用户的签核请求，显示电子签批发起人上传的待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0091]实施例3\n\n[0092]图3示出了本发明实施例提供的一种电子签批用户管理系统的结构示意图。如图3所示，本发明实施例提供的一种电子签批用户管理系统100，包括存储器10、处理器20、检测单元30、登录单元40、验证单元50和签核单元60。\n\n[0093]检测单元30用于响应用户的登录请求，检测所述电子签批的登录环境是否安全。本实施例中，检测单元30包括监测模块31和判断模块32。\n\n[0094]监测模块31用于响应用户的登录请求，监测当前登录环境。\n\n[0095]具体地，处理器20响应用户的登录请求，控制监测模块31监测用户当前登录环境，获取当前登录环境的属性信息。所述属性信息包括当前登录环境的网络接入信息，及当前登录终端的IP地址或硬件识别码等。所述网络包括需要认证和不需要认证的免费无线网络。\n\n[0096]判断模块32用于判断监测到的所述登录环境是否满足存储器10存储的风险条件。\n\n[0097]具体地，处理器20响应用户的登录请求，获取存储器10存储的一风险条件。所述风险条件包括安全网络信息，或该用户的历史登录信息等。所述历史登录信息包括该用户近期登录时间及登录终端的IP地址或硬件识别码等。处理器20控制判断模块32判断监测到的所述登录环境是否满足所述风险条件。当所述登录环境满足所述风险条件时，表示所述登录环境安全；反之，表示所述登录环境不安全。\n\n[0098]进一步地，处理器20控制判断模块32比较所述登录环境的属性信息与所述风险条件是否匹配，当所述属性信息与所述风险条件匹配时，表示所述登录环境安全；反之，表示所述登录环境不安全。具体地，处理器20控制判断模块32比较当前登录环境的网络接入信息与所述安全网络信息是否匹配，从而判断当前登录环境是否存在病毒、木马等及存在病毒、木马等的可能性。处理器20控制判断模块32比较当前登录终端的IP地址或硬件识别码与该用户的历史登录信息是否匹配，从而判断当前登录环境是否为在用户常用登陆终端的登录或异地登录。当然，检测登录环境是否安全的方式还有很多，这里不再一一赘述。\n\n[0099]登录单元40用于获取及比较用户输入的登录信息和存储器10存储的该用户的登录信息。本实施例中，登录单元40包括第一获取模块41、第一比较模块42和第一提示模块43。\n\n[0100]第一获取模块41用于获取用户输入的登录信息。\n\n[0101]具体地，当所述登录环境安全时，处理器20控制第一获取模块41显示登录界面，及获取用户在所述登录界面输入的登录信息。所述登录界面包括登录信息输入框等。所述登录信息可以是用户名和密码等。\n\n[0102]进一步地，当所述登录环境不安全时，处理器20控制第一获取模块41显示登录验证界面，及获取用户在所述登录验证界面输入的登录信息。所述登录验证界面包括登录信息输入框和验证信息输入框等。\n\n[0103]第一比较模块42用于比较所述输入的登录信息和所述存储的该用户的登录信息。\n\n[0104]具体地，处理器20控制第一比较模块42比较用户输入的登录信息和存储器10存储的该用户的登录信息是否一致。存储器10存储的该用户的登录信息为用户注册电子签批系统时预留的用户名、密码等信息。\n\n[0105]第一提示模块43用于当所述输入的登录信息和所述存储的登录信息不一致时，生成及展示登录失败信息。\n\n[0106]具体地，当用户输入的登录信息和存储器10存储的登录信息不一致时，处理器20控制第一提示模块43生成及展示登录失败信息。所述登录失败信息为用于提示用户名或密码不存在或错误的文本、语音或图片等信息。此时，用户无法浏览电子签批系统内任何信息，无法完成签核行为，从而保证电子签批的安全性。\n\n[0107]验证单元50用于当所述登录环境不安全时，获取及比较用户的识别信息和存储器10存储的该用户的识别信息。本实施例中，验证单元50包括第二获取模块51、第二比较模块52和第二提示模块53。\n\n[0108]第二获取模块51用于当所述输入的登录信息和所述存储的登录信息一致时，响应用户的验证请求，获取用户的识别信息。\n\n[0109]具体地，当所述输入的登录信息和所述存储的登录信息一致时，处理器20响应用户的验证请求，获取用户的识别信息。所述识别信息为用户的指纹信息、录音信息、录像信息、手机或路由器等的硬件识别码或WIFI信息等。\n\n[0110]第二比较模块52用于比较用户的识别信息和存储器10存储的该用户的识别信息。\n\n[0111]具体地，处理器20响应用户的验证请求，获取存储器10存储的该用户的识别信息，控制第二比较模块52比较第二获取模块51获取的该用户的识别信息和存储器10存储的该用户的识别信息是否一致。\n\n[0112]第二提示模块53用于当所述获取的识别信息和所述存储的该用户的识别信息不一致时，生成及展示简略签核信息。\n\n[0113]具体地，当所述获取的识别信息和所述存储的该用户的识别信息不一致时，处理器20控制第二提示模块53生成及展示简略签核信息。所述简略签核信息为包括电子签批主题、发起人或发起时间的文本、语音或图片等信息。此时，用户只能浏览电子签批系统内简略签核信息，但不能了解电子签批的具体内容，无法完成签核行为，从而保证电子签批的安全性\n\n[0114]签核单元60用于响应用户的签核请求，显示待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0115]具体地，当所述登录环境安全及用户输入的登录信息和存储器10存储的登录信息一致，或所述获取的识别信息和存储器10存储的该用户的识别信息一致时，处理器20控制签核单元60响应用户的签核请求，显示电子签批发起人上传的待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0116]本发明实施例提供的电子签批用户管理方法及系统，自动检测当前登录环境是否安全，当登录环境不安全时提示用户进行信息验证，用户只有验证通过才能完成签核行为，从而保证电子签批的安全性，避免非法分子对重要信息的窃取，对用户造成不必要的损失。\n\n[0117]本发明实施例所提供的系统，其实现原理及产生的技术效果和前述方法实施例相同，为简要描述，系统实施例部分未提及之处，可参考前述方法实施例中相应内容。\n\n[0118]在这里示出和描述的所有示例中，任何具体值应被解释为仅仅是示例性的，而不是为限制，因此，示例性实施例的其他示例可以具有不同的值。应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。\n\n[0119]在本申请所提供的几个实施例中，应该理解到，所揭露的装置可以通过其它的方式实现。以上所描述的装置实施例仅仅是示意性的，例如，所述单元的划分，仅仅为一种逻辑功能划分，实际实现时可以有另外的划分方式，又例如，多个单元或组件可以结合或者可以集成到另一个系统，或一些特征可以忽略，或不执行。另一点，所显示或讨论的相互之间的耦合或直接耦合或通信连接可以是通过一些通信接口，装置或单元的间接耦合或通信连接，可以是电性，机械或其它的形式。\n\n[0120]所述为分离部件说明的单元可以是或者也可以不是物理上分开的，为单元显示的部件可以是或者也可以不是物理单元，即可以位于一个地方，或者也可以分布到多个网络单元上。可以根据实际的需要选择其中的部分或者全部单元来实现本实施例方案的目的。\n\n[0121]另外，在本发明各个实施例中的各功能单元可以集成在一个处理单元中，也可以是各个单元单独物理存在，也可以两个或两个以上单元集成在一个单元中。\n\n[0122]以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应所述以权利要求的保护范围为准。\n\n', '技术领域\n\n[0001]本发明涉及电子签批技术领域，具体而言，涉及一种电子签批用户管理方法及系统。\n\n背景技术\n\n[0002]对于公司内部签批流程，通常需要将待签批文件打印出来，然后给到各个签批人处进行签批签字盖章。这样的签批流程较为繁琐，工作效率低下。由此，电子签批应运而生。近年来，电子签批在企业流程、行业应用、移动支付和个人信息安全等各种场景中得到越来越多的应用。\n\n[0003]但现有的电子签批大多通过公共网络传输签批文件，对签批文件的签核缺乏保护机制。对于企业来说，企业的财政开支状况、项目申请及研发文档等都是非常机密的材料，一些不法的竞争者经常通过技术手段窃取机密，使受害者遭受巨大的经济损失。\n\n发明内容\n\n[0004]本发明正是基于上述问题，提出了一种对签批文件具有保护机制的电子签批用户管理方法及系统。\n\n[0005]有鉴于此，本发明一方面提出了一种电子签批用户管理方法，包括：\n\n[0006]响应用户的登录请求，检测所述电子签批的登录环境是否安全；\n\n[0007]当所述登录环境不安全时，获取及比较用户的识别信息和服务器端存储的该用户的识别信息；\n\n[0008]当所述登录环境安全，或所述获取的识别信息和所述存储的识别信息一致时，响应用户的签核请求，显示待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0009]进一步地，步骤“响应用户的登录请求，检测所述电子签批的登录环境是否安全”包括：\n\n[0010]响应用户的登录请求，监测当前登录环境；\n\n[0011]判断监测到的所述登录环境是否满足服务器端预设的风险条件；\n\n[0012]当所述登录环境满足所述风险条件时，所述登录环境安全；反之，所述登录环境不安全。\n\n[0013]进一步地，步骤“当所述登录环境不安全时，获取及比较用户的识别信息和服务器端存储的该用户的识别信息”包括：\n\n[0014]当所述登录环境不安全时，显示登录验证界面，获取用户在所述登录验证界面输入的登录信息；\n\n[0015]比较所述输入的登录信息和服务器端存储的该用户的登录信息；\n\n[0016]当所述输入的登录信息和所述存储的登录信息不一致时，生成及展示登录失败信息；\n\n[0017]当所述输入的登录信息和所述存储的登录信息一致时，响应用户的验证请求，获取及比较用户的识别信息和所述服务器端存储的该用户的识别信息。\n\n[0018]进一步地，步骤“当所述登录环境安全时，响应用户的签核请求，显示待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件”还包括：\n\n[0019]当所述登录环境安全时，显示登录界面，获取用户在所述登录界面输入的登录信息；\n\n[0020]比较所述输入的登录信息和服务器端存储的该用户的登录信息；\n\n[0021]当所述输入的登录信息和所述存储的登录信息不一致时，生成及展示登录失败信息；\n\n[0022]当所述输入的登录信息和所述存储的登录信息一致时，响应用户的签核请求，显示待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0023]进一步地，还包括：当所述获取的识别信息和所述存储的识别信息不一致时，生成及展示简略签核信息。\n\n[0024]本发明另一方面还提供了一种电子签批用户管理系统，包括存储器、检测单元、验证单元和签核单元。\n\n[0025]所述检测单元，用于响应用户的登录请求，检测所述电子签批的登录环境是否安全。\n\n[0026]所述验证单元，用于当所述登录环境不安全时，获取及比较用户的识别信息和所述存储器存储的该用户的识别信息。\n\n[0027]所述签核单元，用于当所述登录环境安全，或所述获取的识别信息和所述存储的识别信息一致时，响应用户的签核请求，显示待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0028]进一步地，所述检测单元包括监测模块和判断模块。\n\n[0029]所述监测模块，用于响应用户的登录请求，监测当前登录环境。\n\n[0030]所述判断模块，用于判断监测到的所述登录环境是否满足所述存储器存储的风险条件。\n\n[0031]进一步地，所述电子签批用户管理系统还包括存储器、处理器和登录单元，所述登录单元包括第一获取模块、第一比较模块和第一提示模块。\n\n[0032]所述处理器，用于当所述登录环境安全时，显示登录界面，控制所述第一获取模块获取用户在所述登录界面输入的登录信息，或当所述登录环境不安全时，显示登录验证界面，控制所述第一获取模块获取用户在所述登录验证界面输入的登录信息。\n\n[0033]所述第一比较模块，用于比较所述输入的登录信息和所述存储器存储的该用户的登录信息。\n\n[0034]所述第一提示模块，用于当所述输入的登录信息和所述存储的登录信息不一致时，生成及展示登录失败信息。\n\n[0035]进一步地，所述验证单元包括第二获取模块、第二比较模块和第二提示模块。\n\n[0036]所述第二获取模块，用于当所述输入的登录信息和所述存储的登录信息一致时，响应用户的验证请求，获取用户的识别信息。\n\n[0037]所述第二比较模块，用于比较所述获取的识别信息和所述存储器存储的该用户的识别信息。\n\n[0038]所述第二提示模块，用于当所述获取的识别信息和所述存储的识别信息不一致时，生成及展示简略签核信息。\n\n[0039]进一步地，所述电子签批用户管理系统还包括处理器，\n\n[0040]所述处理器，用于当所述登录环境安全及所述输入的登录信息和所述存储的登录信息一致，或所述获取的识别信息和所述存储的识别信息一致时，控制签核单元响应用户的签核请求，显示所述待签核文件，响应用户对所述待签核文件的签核操作，生成所述已签核文件。\n\n[0041]本发明实施例提供的电子签批用户管理方法及系统，自动检测当前登录环境是否安全，当登录环境不安全时提示用户进行信息验证，用户只有验证通过才能完成签核行为，从而保证电子签批的安全性，避免非法分子对重要信息的窃取，对用户造成不必要的损失。\n\n[0042]为使本发明的上述目的、特征和优点能更明显易懂，下文特举较佳实施例，并配合所附附图，作详细说明如下。\n\n附图说明\n\n[0043]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0044]图1示出了本发明实施例提供的一种电子签批用户管理方法的第一流程示意图；\n\n[0045]图2示出了本发明实施例提供的一种电子签批用户管理方法的第二流程示意图；\n\n[0046]图3示出了本发明实施例提供的一种电子签批用户管理系统的结构示意图。\n\n[0047]主要元件符号说明：\n\n[0048]100-电子签批用户管理系统；10-存储器；20-处理器；30-检测单元；31-监测模块；32-判断模块；40-登录单元；41-第一获取模块；42-第一比较模块；43-第一提示模块；50-验证单元；51-第二获取模块；52-第二比较模块；53-第二提示模块；60-签核单元。\n\n具体实施方式\n\n[0049]为了便于理解本发明，下面将参照相关附图对电子签批用户管理方法及系统进行更清楚、完整地描述。附图中给出了电子签批用户管理方法及系统的优选实施例。电子签批用户管理方法及系统可以通过许多不同的形式来实现，并不限于本文所描述的实施例。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0050]实施例1\n\n[0051]图1示出了本发明实施例提供的一种电子签批用户管理方法的流程示意图。如图1所示，本发明实施例提供的电子签批用户管理方法，包括：\n\n[0052]步骤S10，响应用户的登录请求，检测所述电子签批的登录环境是否安全。\n\n[0053]具体地，响应用户的登录请求，监测用户当前登录环境，获取当前登录环境的属性信息。所述属性信息包括当前登录环境的网络接入信息，及当前登录终端的IP地址或硬件识别码等。所述网络包括需要认证和不需要认证的免费无线网络。\n\n[0054]进一步地，获取服务器端存储的一风险条件，所述风险条件包括安全网络信息，或该用户的历史登录信息等。所述历史登录信息包括该用户近期登录时间及登录终端的IP地址或硬件识别码等。判断监测到的所述登录环境是否满足服务器端预设的风险条件，当所述登录环境满足所述风险条件时，表示所述登录环境安全；反之，表示所述登录环境不安全。\n\n[0055]进一步地，比较所述登录环境的属性信息与所述风险条件是否匹配，当所述属性信息与所述风险条件匹配时，表示所述登录环境安全；反之，表示所述登录环境不安全。具体地，比较当前登录环境的网络接入信息与所述安全网络信息是否匹配，从而判断当前登录环境是否存在病毒、木马等及存在病毒、木马等的可能性；比较当前登录终端的IP地址或硬件识别码与该用户的历史登录信息是否匹配，从而判断当前登录环境是否为在用户常用登陆终端的登录或异地登录。当然，检测登录环境是否安全的方式还有很多，这里不再一一赘述。\n\n[0056]步骤S20，当所述登录环境不安全时，获取及比较用户的识别信息和服务器端存储的该用户的识别信息。\n\n[0057]具体地，当所述登录环境不安全时，显示登录验证界面。所述登录验证界面包括登录信息输入框和验证信息输入框等。获取用户在所述登录验证界面输入的登录信息。所述登录信息可以是用户名和密码等。比较所述输入的登录信息和服务器端存储的该用户的登录信息。所述服务器端存储的该用户的登录信息为用户注册电子签批系统时预留的用户名、密码等信息。\n\n[0058]进一步地，当用户输入的登录信息和服务器端存储的登录信息不一致时，生成及展示登录失败信息。所述登录失败信息为用于提示用户名或密码不存在或错误的文本、语音或图片等信息。此时，用户无法浏览电子签批系统内任何信息，无法完成签核行为，从而保证电子签批的安全性。\n\n[0059]进一步地，当用户输入的登录信息和服务器端存储的登录信息一致时，响应用户的验证请求，获取用户的识别信息。所述识别信息为用户的指纹信息、录音信息、录像信息、手机或路由器等的硬件识别码或WIFI信息等。比较所述获取的识别信息和服务器端存储的该用户的识别信息。当所述获取的识别信息和服务器端存储的该用户的识别信息不一致时，生成及展示简略签核信息。所述简略签核信息为包括电子签批主题、发起人或发起时间的文本、语音或图片等信息。此时，用户只能浏览电子签批系统内简略签核信息，但不能了解电子签批的具体内容，无法完成签核行为，从而保证电子签批的安全性。\n\n[0060]步骤S30，当所述登录环境安全，或所述获取的识别信息和服务器端存储的该用户的识别信息一致时，响应用户的签核请求，显示待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0061]具体地，可以理解，用户只有在成功登录电子签批系统后才能完成签核行为，本实施例中，成功登录电子签批系统包括两种方式。一种方式为所述获取的识别信息和服务器端存储的该用户的识别信息一致。另一方式为登录环境安全且用户输入的登录信息和服务器端存储的登录信息一致。\n\n[0062]进一步地，当所述登录环境安全时，显示登录界面。所述登录界面包括用户登录信息输入框等。获取用户在所述登录界面输入的登录信息。比较所述输入的登录信息和服务器端存储的该用户的登录信息。当用户输入的登录信息和服务器端存储的登录信息不一致时，生成及展示登录失败信息。当用户输入的登录信息和服务器端存储的登录信息一致时，表示用户成功登录电子签批系统，用户可以完成签核行为。响应用户的签核请求，显示电子签批发起人上传的待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0063]进一步地，当获取的用户的识别信息和服务器端存储的该用户的识别信息一致时，表示用户成功登录电子签批系统，用户可以完成签核行为。响应用户的签核请求，显示电子签批发起人上传的待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0064]实施例2\n\n[0065]图2示出了本发明实施例提供的一种电子签批用户管理方法的流程示意图。如图2所示，本发明实施例提供的电子签批用户管理方法，包括：\n\n[0066]步骤S1，响应用户的登录请求，监测当前登录环境。\n\n[0067]具体地，响应用户的登录请求，监测用户当前登录环境，获取当前登录环境的属性信息。所述属性信息包括当前登录环境的网络接入信息，及当前登录终端的IP地址或硬件识别码等。所述网络包括需要认证和不需要认证的免费无线网络。\n\n[0068]步骤S2，判断监测到的所述登录环境是否满足服务器端预设的风险条件，当所述登录环境满足所述风险条件时，执行步骤S31；反之，执行步骤S41。\n\n[0069]具体地，获取服务器端存储的一风险条件，所述风险条件包括安全网络信息，或该用户的历史登录信息等。所述历史登录信息包括该用户近期登录时间及登录终端的IP地址或硬件识别码等。判断监测到的所述登录环境是否满足服务器端预设的风险条件，当所述登录环境满足所述风险条件时，表示所述登录环境安全；反之，表示所述登录环境不安全。\n\n[0070]进一步地，比较所述登录环境的属性信息与所述风险条件是否匹配，当所述属性信息与所述风险条件匹配时，表示所述登录环境安全；反之，表示所述登录环境不安全。具体地，比较当前登录环境的网络接入信息与所述安全网络信息是否匹配，从而判断当前登录环境是否存在病毒、木马等，及存在病毒、木马等的可能性；比较当前登录终端的IP地址或硬件识别码与该用户的历史登录信息是否匹配，从而判断当前登录环境是否为在用户常用登陆终端的登录或异地登录。当然，检测登录环境是否安全的方式还有很多，在此不再一一赘述。\n\n[0071]步骤S31，当所述登录环境安全时，显示登录界面，获取用户在所述登录界面输入的登录信息。\n\n[0072]具体地，当所述登录环境安全时，显示登录界面。所述登录界面包括登录信息输入框等。获取用户在所述登录界面输入的登录信息。所述登录信息可以是用户名和密码等。\n\n[0073]步骤S32，比较所述输入的登录信息和服务器端存储的该用户的登录信息，当所述输入的登录信息和所述存储的登录信息一致时，执行步骤S5。\n\n[0074]具体地，比较用户输入的登录信息和服务器端存储的该用户的登录信息。所述服务器端存储的该用户的登录信息为用户注册电子签批系统时预留的用户名、密码等信息。当所述输入的登录信息和所述存储的登录信息一致时，用户成功登陆电子签批系统。可以理解，用户只有在成功登录电子签批系统后才能完成签核行为，从而保证电子签批的安全性。\n\n[0075]步骤S33，当所述输入的登录信息和所述存储的登录信息不一致时，生成及展示登录失败信息。\n\n[0076]具体地地，所述登录失败信息为用于提示用户名或密码不存在或错误的文本、语音或图片等信息。此时，用户无法浏览电子签批系统内任何信息，无法完成签核行为，从而保证电子签批的安全性。\n\n[0077]步骤S41，当所述登录环境不安全时，显示登录验证界面，获取用户在所述登录验证界面输入的登录信息。\n\n[0078]具体地，当所述登录环境不安全时，显示登录验证界面。所述登录验证界面包括登录信息输入框和验证信息输入框等。获取用户在所述登录验证界面输入的登录信息。所述登录信息可以是用户名和密码等。\n\n[0079]步骤S42，比较所述输入的登录信息和服务器端存储的该用户的登录信息。\n\n[0080]具体地，比较所述输入的登录信息和服务器端存储的该用户的登录信息。所述服务器端存储的该用户的登录信息为用户注册电子签批系统时预留的用户名、密码等信息。\n\n[0081]步骤S43，当所述输入的登录信息和所述存储的登录信息不一致时，生成及展示登录失败信息。\n\n[0082]具体地，所述登录失败信息为用于提示用户名或密码不存在或错误的文本、语音或图片等信息。此时，用户无法浏览电子签批系统内任何信息，无法完成签核行为，从而保证电子签批的安全性。\n\n[0083]步骤S44，当所述输入的登录信息和所述存储的登录信息一致时，响应用户的验证请求，获取用户的识别信息。\n\n[0084]具体地，当所述输入的登录信息和所述存储的登录信息一致时，表示用户输入的登录信息正确。但由于当前登陆环境不安全，为了保证电子签核的安全性，仍需进一步地认证才能进行签核行为。响应用户的验证请求，获取用户的识别信息。所述识别信息为用户的指纹信息、录音信息、录像信息、手机或路由器等的硬件识别码或WIFI信息等。\n\n[0085]步骤S45，比较所述获取的识别信息和服务器端存储的该用户的识别信息，当所述获取的识别信息和服务器端存储的该用户的识别信息一致时，执行步骤S5。\n\n[0086]具体地，比较所述获取的识别信息和服务器端存储的该用户的识别信息是否一致。当所述获取的识别信息和服务器端存储的该用户的识别信息一致时，用户成功登陆电子签批系统。可以理解，用户只有在成功登录电子签批系统后才能完成签核行为，从而保证电子签批的安全性。\n\n[0087]步骤S46，当所述获取的识别信息和服务器端存储的该用户的识别信息不一致时，生成及展示简略签核信息。\n\n[0088]具体地，当所述获取的识别信息和服务器端存储的该用户的识别信息不一致时，生成及展示简略签核信息。所述简略签核信息为包括电子签批主题、发起人或发起时间的文本、语音或图片等信息。此时，用户只能浏览电子签批系统内简略签核信息，但不能了解电子签批的具体内容，无法完成签核行为，从而保证电子签批的安全性。\n\n[0089]步骤S5，响应用户的签核请求，显示待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0090]具体地，可以理解，用户只有在成功登录电子签批系统后才能完成签核行为，本实施例中，成功登录电子签批系统包括两种方式。一种方式为所述获取的用户的识别信息和服务器端存储的该用户的识别信息一致。另一方式为登录环境安全且用户输入的登录信息和服务器端存储的登录信息一致。换句话说，当所述登录环境安全及用户输入的登录信息和服务器端存储的登录信息一致，或所述获取的用户的识别信息和服务器端存储的该用户的识别信息一致时，表示用户成功登录电子签批系统，用户可以完成签核行为。响应用户的签核请求，显示电子签批发起人上传的待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0091]实施例3\n\n[0092]图3示出了本发明实施例提供的一种电子签批用户管理系统的结构示意图。如图3所示，本发明实施例提供的一种电子签批用户管理系统100，包括存储器10、处理器20、检测单元30、登录单元40、验证单元50和签核单元60。\n\n[0093]检测单元30用于响应用户的登录请求，检测所述电子签批的登录环境是否安全。本实施例中，检测单元30包括监测模块31和判断模块32。\n\n[0094]监测模块31用于响应用户的登录请求，监测当前登录环境。\n\n[0095]具体地，处理器20响应用户的登录请求，控制监测模块31监测用户当前登录环境，获取当前登录环境的属性信息。所述属性信息包括当前登录环境的网络接入信息，及当前登录终端的IP地址或硬件识别码等。所述网络包括需要认证和不需要认证的免费无线网络。\n\n[0096]判断模块32用于判断监测到的所述登录环境是否满足存储器10存储的风险条件。\n\n[0097]具体地，处理器20响应用户的登录请求，获取存储器10存储的一风险条件。所述风险条件包括安全网络信息，或该用户的历史登录信息等。所述历史登录信息包括该用户近期登录时间及登录终端的IP地址或硬件识别码等。处理器20控制判断模块32判断监测到的所述登录环境是否满足所述风险条件。当所述登录环境满足所述风险条件时，表示所述登录环境安全；反之，表示所述登录环境不安全。\n\n[0098]进一步地，处理器20控制判断模块32比较所述登录环境的属性信息与所述风险条件是否匹配，当所述属性信息与所述风险条件匹配时，表示所述登录环境安全；反之，表示所述登录环境不安全。具体地，处理器20控制判断模块32比较当前登录环境的网络接入信息与所述安全网络信息是否匹配，从而判断当前登录环境是否存在病毒、木马等及存在病毒、木马等的可能性。处理器20控制判断模块32比较当前登录终端的IP地址或硬件识别码与该用户的历史登录信息是否匹配，从而判断当前登录环境是否为在用户常用登陆终端的登录或异地登录。当然，检测登录环境是否安全的方式还有很多，这里不再一一赘述。\n\n[0099]登录单元40用于获取及比较用户输入的登录信息和存储器10存储的该用户的登录信息。本实施例中，登录单元40包括第一获取模块41、第一比较模块42和第一提示模块43。\n\n[0100]第一获取模块41用于获取用户输入的登录信息。\n\n[0101]具体地，当所述登录环境安全时，处理器20控制第一获取模块41显示登录界面，及获取用户在所述登录界面输入的登录信息。所述登录界面包括登录信息输入框等。所述登录信息可以是用户名和密码等。\n\n[0102]进一步地，当所述登录环境不安全时，处理器20控制第一获取模块41显示登录验证界面，及获取用户在所述登录验证界面输入的登录信息。所述登录验证界面包括登录信息输入框和验证信息输入框等。\n\n[0103]第一比较模块42用于比较所述输入的登录信息和所述存储的该用户的登录信息。\n\n[0104]具体地，处理器20控制第一比较模块42比较用户输入的登录信息和存储器10存储的该用户的登录信息是否一致。存储器10存储的该用户的登录信息为用户注册电子签批系统时预留的用户名、密码等信息。\n\n[0105]第一提示模块43用于当所述输入的登录信息和所述存储的登录信息不一致时，生成及展示登录失败信息。\n\n[0106]具体地，当用户输入的登录信息和存储器10存储的登录信息不一致时，处理器20控制第一提示模块43生成及展示登录失败信息。所述登录失败信息为用于提示用户名或密码不存在或错误的文本、语音或图片等信息。此时，用户无法浏览电子签批系统内任何信息，无法完成签核行为，从而保证电子签批的安全性。\n\n[0107]验证单元50用于当所述登录环境不安全时，获取及比较用户的识别信息和存储器10存储的该用户的识别信息。本实施例中，验证单元50包括第二获取模块51、第二比较模块52和第二提示模块53。\n\n[0108]第二获取模块51用于当所述输入的登录信息和所述存储的登录信息一致时，响应用户的验证请求，获取用户的识别信息。\n\n[0109]具体地，当所述输入的登录信息和所述存储的登录信息一致时，处理器20响应用户的验证请求，获取用户的识别信息。所述识别信息为用户的指纹信息、录音信息、录像信息、手机或路由器等的硬件识别码或WIFI信息等。\n\n[0110]第二比较模块52用于比较用户的识别信息和存储器10存储的该用户的识别信息。\n\n[0111]具体地，处理器20响应用户的验证请求，获取存储器10存储的该用户的识别信息，控制第二比较模块52比较第二获取模块51获取的该用户的识别信息和存储器10存储的该用户的识别信息是否一致。\n\n[0112]第二提示模块53用于当所述获取的识别信息和所述存储的该用户的识别信息不一致时，生成及展示简略签核信息。\n\n[0113]具体地，当所述获取的识别信息和所述存储的该用户的识别信息不一致时，处理器20控制第二提示模块53生成及展示简略签核信息。所述简略签核信息为包括电子签批主题、发起人或发起时间的文本、语音或图片等信息。此时，用户只能浏览电子签批系统内简略签核信息，但不能了解电子签批的具体内容，无法完成签核行为，从而保证电子签批的安全性\n\n[0114]签核单元60用于响应用户的签核请求，显示待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0115]具体地，当所述登录环境安全及用户输入的登录信息和存储器10存储的登录信息一致，或所述获取的识别信息和存储器10存储的该用户的识别信息一致时，处理器20控制签核单元60响应用户的签核请求，显示电子签批发起人上传的待签核文件，响应用户对所述待签核文件的签核操作，生成已签核文件。\n\n[0116]本发明实施例提供的电子签批用户管理方法及系统，自动检测当前登录环境是否安全，当登录环境不安全时提示用户进行信息验证，用户只有验证通过才能完成签核行为，从而保证电子签批的安全性，避免非法分子对重要信息的窃取，对用户造成不必要的损失。\n\n[0117]本发明实施例所提供的系统，其实现原理及产生的技术效果和前述方法实施例相同，为简要描述，系统实施例部分未提及之处，可参考前述方法实施例中相应内容。\n\n[0118]在这里示出和描述的所有示例中，任何具体值应被解释为仅仅是示例性的，而不是为限制，因此，示例性实施例的其他示例可以具有不同的值。应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。\n\n[0119]在本申请所提供的几个实施例中，应该理解到，所揭露的装置可以通过其它的方式实现。以上所描述的装置实施例仅仅是示意性的，例如，所述单元的划分，仅仅为一种逻辑功能划分，实际实现时可以有另外的划分方式，又例如，多个单元或组件可以结合或者可以集成到另一个系统，或一些特征可以忽略，或不执行。另一点，所显示或讨论的相互之间的耦合或直接耦合或通信连接可以是通过一些通信接口，装置或单元的间接耦合或通信连接，可以是电性，机械或其它的形式。\n\n[0120]所述为分离部件说明的单元可以是或者也可以不是物理上分开的，为单元显示的部件可以是或者也可以不是物理单元，即可以位于一个地方，或者也可以分布到多个网络单元上。可以根据实际的需要选择其中的部分或者全部单元来实现本实施例方案的目的。\n\n[0121]另外，在本发明各个实施例中的各功能单元可以集成在一个处理单元中，也可以是各个单元单独物理存在，也可以两个或两个以上单元集成在一个单元中。\n\n[0122]以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应所述以权利要求的保护范围为准。\n\n');
INSERT INTO `os_patent_instruction_text` VALUES (11150, 24088, '技术领域\n\n[0001]本发明涉及网络技术领域，涉及一种发起签核的方法，还涉及一种发起签核的设备。\n\n背景技术\n\n[0002]在现有技术中，文件的签核一般是人工来进行的，在具体的过程中，需要将相应的文件打印出来，并以人工的方式传递给各个需要签核的签核人处，操作流程繁琐，费时费力，效率低下。\n\n发明内容\n\n[0003]针对现有技术中的缺陷，本发明提出了一种发起签核的方法和设备，用以克服现有技术中缺陷，实现方便快捷的发起签核，提高签核的效率。\n\n[0004]具体的，本发明提出了以下具体的实施例：\n\n[0005]本发明实施例提出了一种发起签核的方法，应用于签核系统中，该方法包括：\n\n[0006]接收用户的多个选择指令；其中，各所述选择指令对应所选择的签核人信息；各所述签核人对应设置有不同的权限的信息；\n\n[0007]基于权限从高到低的顺序为各所述签核人设置在签核电子文档上进行签核的签核位置；\n\n[0008]按照权限从高到低的顺序将所述签核电子文档发送给各所述签核人。\n\n[0009]在一个具体的实施例中，所述签核系统中预设有签核人图标，各签核人图标与所述签核人的信息关联；\n\n[0010]所述“接收用户的多个选择指令”，包括：\n\n[0011]接收用户依次点击所述签核人图标所生成的多个选择信号；\n\n[0012]基于各所述选择信号生成对应的选择指令。\n\n[0013]在一个具体的实施例中，所述签核电子文档预设有多个预设签核位置，各预设签核位置之间存在签核顺序；\n\n[0014]所述“基于权限从高到低的顺序为各所述签核人设置在签核电子文档上进行签核的签核位置”，包括：\n\n[0015]获取签核人的权限的信息；\n\n[0016]对权限从高到低进行排序；\n\n[0017]基于所述签核顺序与所述权限从高到低的顺序相同的原则，为各所述签核人在签核电子文档上的预设签核位置中选择对应的签核位置，以使得各所述签核人在与自身的信息关联的预设签核位置进行签核。\n\n[0018]在一个具体的实施例中，所述“按照权限从高到低的顺序将所述签核电子文档发送给各所述签核人”，包括：\n\n[0019]基于所述权限从高到低的顺序确定当前需要进行签核的签核人，并将所述签核电子文档发送给确定的签核人；\n\n[0020]待当前的签核人签核完成，基于当前的签核人的签核生成新的签核电子文档；\n\n[0021]将新生成的签核电子文档发送给确定的下一位签核人。\n\n[0022]在一个具体的实施例中，该方法还包括：\n\n[0023]获取各签核人的联系方式；\n\n[0024]针对各签核人，当签核电子文档停留在签核人的时间超过预设时间阈值，生成提示签核的信息；\n\n[0025]基于所述联系方式将所述信息发送给所述签核人，以提醒所述签核人进行签核。\n\n[0026]本发明实施例还提出了一种发起签核的设备，应用于签核系统中，该设备包括：\n\n[0027]接收模块，用于接收用户的多个选择指令；其中，各所述选择指令对应所选择的签核人信息；各所述签核人对应设置有不同的权限的信息；\n\n[0028]设置模块，用于基于权限从高到低的顺序为各所述签核人设置在签核电子文档上进行签核的签核位置；\n\n[0029]发送模块，用于按照权限从高到低的顺序将所述签核电子文档发送给各所述签核人。\n\n[0030]在一个具体的实施例中，所述签核系统中预设有签核人图标，各签核人图标与所述签核人的信息关联；\n\n[0031]所述接收模块，用于：\n\n[0032]接收用户依次点击所述签核人图标所生成的多个选择信号；\n\n[0033]基于各所述选择信号生成对应的选择指令。\n\n[0034]在一个具体的实施例中，所述签核电子文档预设有多个预设签核位置，各预设签核位置之间存在签核顺序；\n\n[0035]所述设置模块，用于：\n\n[0036]获取签核人的权限的信息；\n\n[0037]对权限从高到低进行排序；\n\n[0038]基于所述签核顺序与所述权限从高到低的顺序相同的原则，为各所述签核人在签核电子文档上的预设签核位置中选择对应的签核位置，以使得各所述签核人在与自身的信息关联的预设签核位置进行签核。\n\n[0039]在一个具体的实施例中，所述发送模块，用于：\n\n[0040]基于所述权限从高到低的顺序确定当前需要进行签核的签核人，并将所述签核电子文档发送给确定的签核人；\n\n[0041]待当前的签核人签核完成，基于当前的签核人的签核生成新的签核电子文档；\n\n[0042]将新生成的签核电子文档发送给确定的下一位签核人。\n\n[0043]在一个具体的实施例中，该设备还包括：\n\n[0044]提醒模块，用于获取各签核人的联系方式；\n\n[0045]针对各签核人，当签核电子文档停留在签核人的时间超过预设时间阈值，生成提示签核的信息；\n\n[0046]基于所述联系方式将所述信息发送给所述签核人，以提醒所述签核人进行签核。\n\n[0047]与现有技术相比，本发明提出了一种发起签核的方法和设备，应用于签核系统中，其中该方法包括：接收用户的多个选择指令；其中，各所述选择指令对应所选择的签核人的权限的信息；基于权限从高到低的顺序为各所述签核人设置在签核电子文档上进行签核的签核位置；按照权限从高到低的顺序将所述签核电子文档发送给各所述签核人；以此，使得发起签核地过程方便快捷，方便了签核发起用户的操作。\n\n附图说明\n\n[0048]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0049]图1为本发明实施例提出的一种发起签核的方法流程示意图；\n\n[0050]图2为本发明实施例提出的一种接收用户选择指令的方法的流程示意图；\n\n[0051]图3为本发明实施例提出的一种设置签核位置的方法的流程示意图；\n\n[0052]图4为本发明实施例提出的一种电子签核文档的界面示意图；\n\n[0053]图5为本发明实施例提出的一种发送签核电子文档的方法的流程示意图；\n\n[0054]图6为本发明实施例提出的一种发起签核的设备结构示意图；\n\n[0055]图7为本发明实施例提出的一种发起签核的设备结构示意图。\n\n具体实施方式\n\n[0056]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。通常在此处附图中描述和出示的本发明实施例的组件可以以各种不同的配置来布置和设计。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0057]针对现有技术中的缺陷，本发明人发现在实际的应用中，签核过程非常繁琐，效率低下，为此，本发明提出了一种发起签核的方法和设备，应用于签核系统中，具体应用于电子签核过程，用以电子签核过程的效率。\n\n[0058]具体的，本发明提出了以下具体的实施例：\n\n[0059]实施例1\n\n[0060]本发明实施例1公开了一种发起签核的方法，应用于签核系统中，如图1所示，该方法包括：\n\n[0061]步骤101、接收用户的多个选择指令；其中，各所述选择指令对应所选择的签核人信息；各所述签核人对应设置有不同的权限的信息；\n\n[0062]步骤102、基于权限从高到低的顺序为各所述签核人设置在签核电子文档上进行签核的签核位置；\n\n[0063]步骤103、按照权限从高到低的顺序将所述签核电子文档发送给各所述签核人。\n\n[0064]在一个具体的实施例中，所述签核系统中预设有签核人图标，各签核人图标与所述签核人的信息关联；在此情况下，步骤101，也即接收用户的多个选择指令，如图2所示，包括：\n\n[0065]步骤11、接收用户依次点击所述签核人图标所生成的多个选择信号；\n\n[0066]步骤12、基于各所述选择信号生成对应的选择指令。\n\n[0067]在此，以一个具体的例子来进行说明，签核系统可以搭载在一个具体的公司的网络系统中，并基于该公司的人员信息进行筛选，将某些人员作为签核人，后续基于所筛选出的人员信息与签核人图标进行关联，具体的，例如有签核人名为“张三”、“李四”；对应的可以选择写有签核人姓名的图标进行关联；具体的，一个签核人图标对应一个签核人。\n\n[0068]当要发起签核时，用户也即签核发起人会在显示界面依次点击多个签核人图标，每次点击都会生成对应的信号；例如先点击了关于张三的图标，然后点击了关于李四的图标；生成两个信号；然后基于这两个信号生成选择指令，选择指令用于选择签核人进行签核，在此，具体的选择过程以上述为例，则为：选择张三作为签核人进行签核，选择李四作为签核人进行签核。\n\n[0069]而各所述选择指令对应所选择的签核人信息；且各所述签核人对应设置有不同的权限的信息，例如权限可以通过权限值来进行标识，权限值的数值越大，代表权限越高，例如权限值为10的就比权限值为5的权限大，后续签核人的权限的信息是可以查询得到的。\n\n[0070]选择了签核人之后，需要为各签核人选择对应的签核位置，也即进行步骤102。\n\n[0071]而在一个具体的实施例中，所述签核电子文档预设有多个预设签核位置，各预设签核位置之间存在签核顺序；在此情况下，步骤102，也即“基于权限从高到低的顺序为各所述签核人设置在签核电子文档上进行签核的签核位置”，如图3所示，包括：\n\n[0072]步骤21、获取签核人的权限的信息；具体的，由于签核系统中会预存有各签核人的权限的信息，因此可以通过在签核系统中查询签核人得到。\n\n[0073]步骤22、对权限从高到低进行排序；\n\n[0074]步骤23、基于所述签核顺序与所述权限从高到低的顺序相同的原则，为各所述签核人在签核电子文档上的预设签核位置中选择对应的签核位置，以使得各所述签核人在与自身的信息关联的预设签核位置进行签核。\n\n[0075]如图4所示，为一种具体的签核电子文档的界面示意图，图4中有三个预设签核位置，按照签核的先后顺序，分别为第一签核位置、第二签核位置、第三签核位置；假设选择指令分别为：选择用户A进行签核的指令、选择用户B进行签核的指令、选择用户C进行签核的指令；在此情况下，首先分别获取到用户A、用户B、用户C的权限信息，例如用户A的权限最高，用户B的权限最低，用户C的权限处于用户A与用户B之间，在此情况下，按照权限从高到低，将第一签核位置设置为用户A的签核位置、将第二签核位置设置为用户C的签核位置、将第三签核位置设置为用户B的签核位置；后续在进行具体签核时，只要完成签核，用户的所签核的名字或者批注等会自动出现在对应的签核位置。\n\n[0076]在为各签核人设置了签核位置之后，需要将签核电子文档发送到各个签核人，也即进行步骤103，具体的步骤103、即“按照权限从高到低的顺序将所述签核电子文档发送给各所述签核人”，如图5所示，包括：\n\n[0077]步骤31、基于所述权限从高到低的顺序确定当前需要进行签核的签核人，并将所述签核电子文档发送给确定的签核人；\n\n[0078]步骤32、待当前的签核人签核完成，基于当前的签核人的签核生成新的签核电子文档；\n\n[0079]步骤33、将新生成的签核电子文档发送给确定的下一位签核人。\n\n[0080]在此，以一个具体的例子来进行说明，若按照权限从高到低的顺序设置签核的先后顺序，权限高的先签核，权限低的后签核，由此在一个具体的实施例中，由于权限从高到低的顺序为:签核人A、签核人B、签核人C,使得签核顺序依次为签核人A、签核人B、签核人C；在此情况下，首先将签核电子文档发送给签核人A进行签核，待签核人A签核完成之后，基于签核人A的签核，生成新的签核电子文档(例如，该签核电子文档中包含有签核人A的签名)，并将新的签核电子文档发送给签核人B，签核人B在签核人A签核的基础上进行签核，签核人B签核完成之后，一个具体的例子中，生成的新的签核电子文档中会包含有签核人A以及签核人B的签名，然后会被发送给签核人C进行签核，以此类推，直到签核完成。\n\n[0081]在一个具体的实施例中，考虑到签核电子文档发送到签核人后，签核人可能会没注意到，因此为了提醒签核人，该方法还包括：\n\n[0082]获取各签核人的联系方式；\n\n[0083]针对各签核人，当签核电子文档停留在签核人的时间超过预设时间阈值，生成提示签核的信息；\n\n[0084]基于所述联系方式将所述信息发送给所述签核人，以提醒所述签核人进行签核。\n\n[0085]在该具体的实施例中，例如已经将签核电子文档发送给用户D了，但过了很长时间，例如3天，用户D人就没有进行签核，在此情况下，会基于获取的用户D的联系方式，生成提示信息，来提醒用户D及时进行签核。优选的联系方式为手机号，以此提示信息可以为短信。\n\n[0086]实施例2\n\n[0087]本发明实施例2公开了一种发起签核的设备，应用于签核系统中，如图6所示，该设备包括：\n\n[0088]接收模块201，用于接收用户的多个选择指令；其中，各所述选择指令对应所选择的签核人信息；各所述签核人对应设置有不同的权限的信息；\n\n[0089]设置模块202，用于基于权限从高到低的顺序为各所述签核人设置在签核电子文档上进行签核的签核位置；\n\n[0090]发送模块203，用于按照权限从高到低的顺序将所述签核电子文档发送给各所述签核人。\n\n[0091]在一个具体的实施例中，所述签核系统中预设有签核人图标，各签核人图标与所述签核人的信息关联；\n\n[0092]所述接收模块201，用于：\n\n[0093]接收用户依次点击所述签核人图标所生成的多个选择信号；\n\n[0094]基于各所述选择信号生成对应的选择指令。\n\n[0095]在一个具体的实施例中，所述签核电子文档预设有多个预设签核位置，各预设签核位置之间存在签核顺序；\n\n[0096]所述设置模块202，用于：\n\n[0097]获取签核人的权限的信息；\n\n[0098]对权限从高到低进行排序；\n\n[0099]基于所述签核顺序与所述权限从高到低的顺序相同的原则，为各所述签核人在签核电子文档上的预设签核位置中选择对应的签核位置，以使得各所述签核人在与自身的信息关联的预设签核位置进行签核。\n\n[0100]在一个具体的实施例中，所述发送模块203，用于：\n\n[0101]基于所述先后顺序确定当前需要进行签核的签核人，并将所述签核电子文档发送给确定的签核人；\n\n[0102]待当前的签核人签核完成，基于当前的签核人的签核生成新的签核电子文档；\n\n[0103]将新生成的签核电子文档发送给确定的下一位签核人。\n\n[0104]在一个具体的实施例中，如图7所示，该设备还包括：\n\n[0105]提醒模块204，用于获取各签核人的联系方式；\n\n[0106]针对各签核人，当签核电子文档停留在签核人的时间超过预设时间阈值，生成提示签核的信息；\n\n[0107]基于所述联系方式将所述信息发送给所述签核人，以提醒所述签核人进行签核。\n\n[0108]与现有技术相比，本发明提出了一种发起签核的方法和设备，应用于签核系统中，其中该方法包括：接收用户的多个选择指令；其中，接收用户的多个选择指令；其中，各所述选择指令对应所选择的签核人信息；各所述签核人对应设置有不同的权限的信息；基于权限从高到低的顺序为各所述签核人设置在签核电子文档上进行签核的签核位置；按照权限从高到低的顺序将所述签核电子文档发送给各所述签核人；以此，使得发起签核地过程方便快捷，方便了签核发起用户的操作。\n\n[0109]本领域技术人员可以理解附图只是一个优选实施场景的示意图，附图中的模块或流程并不一定是实施本发明所必须的。\n\n[0110]本领域技术人员可以理解实施场景中的装置中的模块可以按照实施场景描述进行分布于实施场景的装置中，也可以进行相应变化位于不同于本实施场景的一个或多个装置中。上述实施场景的模块可以合并为一个模块，也可以进一步拆分成多个子模块。\n\n[0111]上述本发明序号仅仅为了描述，不代表实施场景的优劣。\n\n[0112]以上公开的仅为本发明的几个具体实施场景，但是，本发明并非局限于此，任何本领域的技术人员能思之的变化都应落入本发明的保护范围。\n\n', '技术领域\n\n[0001]本发明涉及网络技术领域，涉及一种发起签核的方法，还涉及一种发起签核的设备。\n\n背景技术\n\n[0002]在现有技术中，文件的签核一般是人工来进行的，在具体的过程中，需要将相应的文件打印出来，并以人工的方式传递给各个需要签核的签核人处，操作流程繁琐，费时费力，效率低下。\n\n发明内容\n\n[0003]针对现有技术中的缺陷，本发明提出了一种发起签核的方法和设备，用以克服现有技术中缺陷，实现方便快捷的发起签核，提高签核的效率。\n\n[0004]具体的，本发明提出了以下具体的实施例：\n\n[0005]本发明实施例提出了一种发起签核的方法，应用于签核系统中，该方法包括：\n\n[0006]接收用户的多个选择指令；其中，各所述选择指令对应所选择的签核人信息；各所述签核人对应设置有不同的权限的信息；\n\n[0007]基于权限从高到低的顺序为各所述签核人设置在签核电子文档上进行签核的签核位置；\n\n[0008]按照权限从高到低的顺序将所述签核电子文档发送给各所述签核人。\n\n[0009]在一个具体的实施例中，所述签核系统中预设有签核人图标，各签核人图标与所述签核人的信息关联；\n\n[0010]所述“接收用户的多个选择指令”，包括：\n\n[0011]接收用户依次点击所述签核人图标所生成的多个选择信号；\n\n[0012]基于各所述选择信号生成对应的选择指令。\n\n[0013]在一个具体的实施例中，所述签核电子文档预设有多个预设签核位置，各预设签核位置之间存在签核顺序；\n\n[0014]所述“基于权限从高到低的顺序为各所述签核人设置在签核电子文档上进行签核的签核位置”，包括：\n\n[0015]获取签核人的权限的信息；\n\n[0016]对权限从高到低进行排序；\n\n[0017]基于所述签核顺序与所述权限从高到低的顺序相同的原则，为各所述签核人在签核电子文档上的预设签核位置中选择对应的签核位置，以使得各所述签核人在与自身的信息关联的预设签核位置进行签核。\n\n[0018]在一个具体的实施例中，所述“按照权限从高到低的顺序将所述签核电子文档发送给各所述签核人”，包括：\n\n[0019]基于所述权限从高到低的顺序确定当前需要进行签核的签核人，并将所述签核电子文档发送给确定的签核人；\n\n[0020]待当前的签核人签核完成，基于当前的签核人的签核生成新的签核电子文档；\n\n[0021]将新生成的签核电子文档发送给确定的下一位签核人。\n\n[0022]在一个具体的实施例中，该方法还包括：\n\n[0023]获取各签核人的联系方式；\n\n[0024]针对各签核人，当签核电子文档停留在签核人的时间超过预设时间阈值，生成提示签核的信息；\n\n[0025]基于所述联系方式将所述信息发送给所述签核人，以提醒所述签核人进行签核。\n\n[0026]本发明实施例还提出了一种发起签核的设备，应用于签核系统中，该设备包括：\n\n[0027]接收模块，用于接收用户的多个选择指令；其中，各所述选择指令对应所选择的签核人信息；各所述签核人对应设置有不同的权限的信息；\n\n[0028]设置模块，用于基于权限从高到低的顺序为各所述签核人设置在签核电子文档上进行签核的签核位置；\n\n[0029]发送模块，用于按照权限从高到低的顺序将所述签核电子文档发送给各所述签核人。\n\n[0030]在一个具体的实施例中，所述签核系统中预设有签核人图标，各签核人图标与所述签核人的信息关联；\n\n[0031]所述接收模块，用于：\n\n[0032]接收用户依次点击所述签核人图标所生成的多个选择信号；\n\n[0033]基于各所述选择信号生成对应的选择指令。\n\n[0034]在一个具体的实施例中，所述签核电子文档预设有多个预设签核位置，各预设签核位置之间存在签核顺序；\n\n[0035]所述设置模块，用于：\n\n[0036]获取签核人的权限的信息；\n\n[0037]对权限从高到低进行排序；\n\n[0038]基于所述签核顺序与所述权限从高到低的顺序相同的原则，为各所述签核人在签核电子文档上的预设签核位置中选择对应的签核位置，以使得各所述签核人在与自身的信息关联的预设签核位置进行签核。\n\n[0039]在一个具体的实施例中，所述发送模块，用于：\n\n[0040]基于所述权限从高到低的顺序确定当前需要进行签核的签核人，并将所述签核电子文档发送给确定的签核人；\n\n[0041]待当前的签核人签核完成，基于当前的签核人的签核生成新的签核电子文档；\n\n[0042]将新生成的签核电子文档发送给确定的下一位签核人。\n\n[0043]在一个具体的实施例中，该设备还包括：\n\n[0044]提醒模块，用于获取各签核人的联系方式；\n\n[0045]针对各签核人，当签核电子文档停留在签核人的时间超过预设时间阈值，生成提示签核的信息；\n\n[0046]基于所述联系方式将所述信息发送给所述签核人，以提醒所述签核人进行签核。\n\n[0047]与现有技术相比，本发明提出了一种发起签核的方法和设备，应用于签核系统中，其中该方法包括：接收用户的多个选择指令；其中，各所述选择指令对应所选择的签核人的权限的信息；基于权限从高到低的顺序为各所述签核人设置在签核电子文档上进行签核的签核位置；按照权限从高到低的顺序将所述签核电子文档发送给各所述签核人；以此，使得发起签核地过程方便快捷，方便了签核发起用户的操作。\n\n附图说明\n\n[0048]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0049]图1为本发明实施例提出的一种发起签核的方法流程示意图；\n\n[0050]图2为本发明实施例提出的一种接收用户选择指令的方法的流程示意图；\n\n[0051]图3为本发明实施例提出的一种设置签核位置的方法的流程示意图；\n\n[0052]图4为本发明实施例提出的一种电子签核文档的界面示意图；\n\n[0053]图5为本发明实施例提出的一种发送签核电子文档的方法的流程示意图；\n\n[0054]图6为本发明实施例提出的一种发起签核的设备结构示意图；\n\n[0055]图7为本发明实施例提出的一种发起签核的设备结构示意图。\n\n具体实施方式\n\n[0056]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。通常在此处附图中描述和出示的本发明实施例的组件可以以各种不同的配置来布置和设计。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0057]针对现有技术中的缺陷，本发明人发现在实际的应用中，签核过程非常繁琐，效率低下，为此，本发明提出了一种发起签核的方法和设备，应用于签核系统中，具体应用于电子签核过程，用以电子签核过程的效率。\n\n[0058]具体的，本发明提出了以下具体的实施例：\n\n[0059]实施例1\n\n[0060]本发明实施例1公开了一种发起签核的方法，应用于签核系统中，如图1所示，该方法包括：\n\n[0061]步骤101、接收用户的多个选择指令；其中，各所述选择指令对应所选择的签核人信息；各所述签核人对应设置有不同的权限的信息；\n\n[0062]步骤102、基于权限从高到低的顺序为各所述签核人设置在签核电子文档上进行签核的签核位置；\n\n[0063]步骤103、按照权限从高到低的顺序将所述签核电子文档发送给各所述签核人。\n\n[0064]在一个具体的实施例中，所述签核系统中预设有签核人图标，各签核人图标与所述签核人的信息关联；在此情况下，步骤101，也即接收用户的多个选择指令，如图2所示，包括：\n\n[0065]步骤11、接收用户依次点击所述签核人图标所生成的多个选择信号；\n\n[0066]步骤12、基于各所述选择信号生成对应的选择指令。\n\n[0067]在此，以一个具体的例子来进行说明，签核系统可以搭载在一个具体的公司的网络系统中，并基于该公司的人员信息进行筛选，将某些人员作为签核人，后续基于所筛选出的人员信息与签核人图标进行关联，具体的，例如有签核人名为“张三”、“李四”；对应的可以选择写有签核人姓名的图标进行关联；具体的，一个签核人图标对应一个签核人。\n\n[0068]当要发起签核时，用户也即签核发起人会在显示界面依次点击多个签核人图标，每次点击都会生成对应的信号；例如先点击了关于张三的图标，然后点击了关于李四的图标；生成两个信号；然后基于这两个信号生成选择指令，选择指令用于选择签核人进行签核，在此，具体的选择过程以上述为例，则为：选择张三作为签核人进行签核，选择李四作为签核人进行签核。\n\n[0069]而各所述选择指令对应所选择的签核人信息；且各所述签核人对应设置有不同的权限的信息，例如权限可以通过权限值来进行标识，权限值的数值越大，代表权限越高，例如权限值为10的就比权限值为5的权限大，后续签核人的权限的信息是可以查询得到的。\n\n[0070]选择了签核人之后，需要为各签核人选择对应的签核位置，也即进行步骤102。\n\n[0071]而在一个具体的实施例中，所述签核电子文档预设有多个预设签核位置，各预设签核位置之间存在签核顺序；在此情况下，步骤102，也即“基于权限从高到低的顺序为各所述签核人设置在签核电子文档上进行签核的签核位置”，如图3所示，包括：\n\n[0072]步骤21、获取签核人的权限的信息；具体的，由于签核系统中会预存有各签核人的权限的信息，因此可以通过在签核系统中查询签核人得到。\n\n[0073]步骤22、对权限从高到低进行排序；\n\n[0074]步骤23、基于所述签核顺序与所述权限从高到低的顺序相同的原则，为各所述签核人在签核电子文档上的预设签核位置中选择对应的签核位置，以使得各所述签核人在与自身的信息关联的预设签核位置进行签核。\n\n[0075]如图4所示，为一种具体的签核电子文档的界面示意图，图4中有三个预设签核位置，按照签核的先后顺序，分别为第一签核位置、第二签核位置、第三签核位置；假设选择指令分别为：选择用户A进行签核的指令、选择用户B进行签核的指令、选择用户C进行签核的指令；在此情况下，首先分别获取到用户A、用户B、用户C的权限信息，例如用户A的权限最高，用户B的权限最低，用户C的权限处于用户A与用户B之间，在此情况下，按照权限从高到低，将第一签核位置设置为用户A的签核位置、将第二签核位置设置为用户C的签核位置、将第三签核位置设置为用户B的签核位置；后续在进行具体签核时，只要完成签核，用户的所签核的名字或者批注等会自动出现在对应的签核位置。\n\n[0076]在为各签核人设置了签核位置之后，需要将签核电子文档发送到各个签核人，也即进行步骤103，具体的步骤103、即“按照权限从高到低的顺序将所述签核电子文档发送给各所述签核人”，如图5所示，包括：\n\n[0077]步骤31、基于所述权限从高到低的顺序确定当前需要进行签核的签核人，并将所述签核电子文档发送给确定的签核人；\n\n[0078]步骤32、待当前的签核人签核完成，基于当前的签核人的签核生成新的签核电子文档；\n\n[0079]步骤33、将新生成的签核电子文档发送给确定的下一位签核人。\n\n[0080]在此，以一个具体的例子来进行说明，若按照权限从高到低的顺序设置签核的先后顺序，权限高的先签核，权限低的后签核，由此在一个具体的实施例中，由于权限从高到低的顺序为:签核人A、签核人B、签核人C,使得签核顺序依次为签核人A、签核人B、签核人C；在此情况下，首先将签核电子文档发送给签核人A进行签核，待签核人A签核完成之后，基于签核人A的签核，生成新的签核电子文档(例如，该签核电子文档中包含有签核人A的签名)，并将新的签核电子文档发送给签核人B，签核人B在签核人A签核的基础上进行签核，签核人B签核完成之后，一个具体的例子中，生成的新的签核电子文档中会包含有签核人A以及签核人B的签名，然后会被发送给签核人C进行签核，以此类推，直到签核完成。\n\n[0081]在一个具体的实施例中，考虑到签核电子文档发送到签核人后，签核人可能会没注意到，因此为了提醒签核人，该方法还包括：\n\n[0082]获取各签核人的联系方式；\n\n[0083]针对各签核人，当签核电子文档停留在签核人的时间超过预设时间阈值，生成提示签核的信息；\n\n[0084]基于所述联系方式将所述信息发送给所述签核人，以提醒所述签核人进行签核。\n\n[0085]在该具体的实施例中，例如已经将签核电子文档发送给用户D了，但过了很长时间，例如3天，用户D人就没有进行签核，在此情况下，会基于获取的用户D的联系方式，生成提示信息，来提醒用户D及时进行签核。优选的联系方式为手机号，以此提示信息可以为短信。\n\n[0086]实施例2\n\n[0087]本发明实施例2公开了一种发起签核的设备，应用于签核系统中，如图6所示，该设备包括：\n\n[0088]接收模块201，用于接收用户的多个选择指令；其中，各所述选择指令对应所选择的签核人信息；各所述签核人对应设置有不同的权限的信息；\n\n[0089]设置模块202，用于基于权限从高到低的顺序为各所述签核人设置在签核电子文档上进行签核的签核位置；\n\n[0090]发送模块203，用于按照权限从高到低的顺序将所述签核电子文档发送给各所述签核人。\n\n[0091]在一个具体的实施例中，所述签核系统中预设有签核人图标，各签核人图标与所述签核人的信息关联；\n\n[0092]所述接收模块201，用于：\n\n[0093]接收用户依次点击所述签核人图标所生成的多个选择信号；\n\n[0094]基于各所述选择信号生成对应的选择指令。\n\n[0095]在一个具体的实施例中，所述签核电子文档预设有多个预设签核位置，各预设签核位置之间存在签核顺序；\n\n[0096]所述设置模块202，用于：\n\n[0097]获取签核人的权限的信息；\n\n[0098]对权限从高到低进行排序；\n\n[0099]基于所述签核顺序与所述权限从高到低的顺序相同的原则，为各所述签核人在签核电子文档上的预设签核位置中选择对应的签核位置，以使得各所述签核人在与自身的信息关联的预设签核位置进行签核。\n\n[0100]在一个具体的实施例中，所述发送模块203，用于：\n\n[0101]基于所述先后顺序确定当前需要进行签核的签核人，并将所述签核电子文档发送给确定的签核人；\n\n[0102]待当前的签核人签核完成，基于当前的签核人的签核生成新的签核电子文档；\n\n[0103]将新生成的签核电子文档发送给确定的下一位签核人。\n\n[0104]在一个具体的实施例中，如图7所示，该设备还包括：\n\n[0105]提醒模块204，用于获取各签核人的联系方式；\n\n[0106]针对各签核人，当签核电子文档停留在签核人的时间超过预设时间阈值，生成提示签核的信息；\n\n[0107]基于所述联系方式将所述信息发送给所述签核人，以提醒所述签核人进行签核。\n\n[0108]与现有技术相比，本发明提出了一种发起签核的方法和设备，应用于签核系统中，其中该方法包括：接收用户的多个选择指令；其中，接收用户的多个选择指令；其中，各所述选择指令对应所选择的签核人信息；各所述签核人对应设置有不同的权限的信息；基于权限从高到低的顺序为各所述签核人设置在签核电子文档上进行签核的签核位置；按照权限从高到低的顺序将所述签核电子文档发送给各所述签核人；以此，使得发起签核地过程方便快捷，方便了签核发起用户的操作。\n\n[0109]本领域技术人员可以理解附图只是一个优选实施场景的示意图，附图中的模块或流程并不一定是实施本发明所必须的。\n\n[0110]本领域技术人员可以理解实施场景中的装置中的模块可以按照实施场景描述进行分布于实施场景的装置中，也可以进行相应变化位于不同于本实施场景的一个或多个装置中。上述实施场景的模块可以合并为一个模块，也可以进一步拆分成多个子模块。\n\n[0111]上述本发明序号仅仅为了描述，不代表实施场景的优劣。\n\n[0112]以上公开的仅为本发明的几个具体实施场景，但是，本发明并非局限于此，任何本领域的技术人员能思之的变化都应落入本发明的保护范围。\n\n');
INSERT INTO `os_patent_instruction_text` VALUES (11151, 24089, '技术领域\n\n[0001]本发明涉及电子信息的技术领域，具体而言，涉及一种电子核签方法及设备。\n\n背景技术\n\n[0002]传统的核签，是在纸质文件上签署姓名，代表签字者的授权和认可，这在日常的工作和生活中随处需要。目前，对于办公流程中常见的文件审批方式，是员工书面打印待审批文件、交给审批人手动签字、扫描该签字文件、发送传真或上传到邮件发送，作为线上审批证明文件使用。\n\n[0003]然而，这种传统的核签方式往往会受到地域和时间的限制，使得核签的便捷性和效率都大打折扣，也使得核签双方的业务往来和授权受到了限制。\n\n[0004]不过，随着自动化办公的普及，电子技术的不断发展，电子文件的签名模式走入人们的视线，通过核签电子文件，代表签字者的授权和认可，然而，在核签电子文件中，需要签字者对每一次的核签进行一次手写的签名，才能够将签名信息提取至电子文件中，整个过程比较繁琐，不够便利。而且，由于对签字者没有进一步的安全验证，所以还存在有一定的安全隐患。\n\n发明内容\n\n[0005]有鉴于此，本发明在于提供一种电子核签方法及设备，以便于在核签电子文件中更便捷，更安全。\n\n[0006]具体的，本发明提出了以下具体的实施例：\n\n[0007]本发明实施例提出了一种电子核签方法，其应用于电子核签过程，包括以下步骤：\n\n[0008]当用户处于登录状态时，判断是否有需要所述用户处理的核签请求；\n\n[0009]若判断结果为是，则发送所述核签请求至所述用户；\n\n[0010]当接收到所述用户的身份确认信息时，提取与所述用户相对应的签名信息对所述核签请求进行核签。\n\n[0011]进一步地，所述判断是否有需要所述用户处理的核签请求，具体包括：\n\n[0012]基于核签请求的当前流程所需要的核签人生成核签人数据库；\n\n[0013]判断所述用户是否存在于所述核签人数据库中。\n\n[0014]进一步地，当无法提取与所述用户相对应的签名信息时，向所述用户发送提示信息以提示所述用户录入签名信息。\n\n[0015]进一步地，所述用户的身份确认信息，具体包括所述用户的指纹信息。\n\n[0016]进一步地，所述用户的身份确认信息，具体包括所述用户的虹膜信息。\n\n[0017]本发明实施例还提出了一种电子核签设备，其应用于电子核签过程，包括：\n\n[0018]判断模块，用于：当用户处于登录状态时，判断是否有需要所述用户处理的核签请求；\n\n[0019]处理模块，用于：当判断结果为是时，则发送所述核签请求至所述用户；\n\n[0020]核签模块，用于：当接收到所述用户的身份确认信息时，提取与所述用户相对应的签名信息进行核签。\n\n[0021]进一步地，判断是否有需要所述用户处理的核签请求，所述判断模块，具体用于：\n\n[0022]基于核签请求的当前流程所需要的核签人生成核签人数据库；\n\n[0023]判断所述用户是否存在于所述核签人数据库中。\n\n[0024]进一步地，所述处理模块在无法提取与所述用户相对应的签名信息时，向所述用户发送提示信息以提示所述用户录入签名信息。\n\n[0025]进一步地，还包括指纹录入模块，用于录入所述用户的指纹信息。\n\n[0026]进一步地，还包括虹膜录入模块，用于录入所述用户的虹膜信息。\n\n[0027]本发明的一种电子核签方法及设备，其应用于电子核签过程，其中一种电子核签方法包括以下步骤：当用户处于登录状态时，判断是否有需要所述用户处理的核签请求；若判断结果为是，则发送所述核签请求至所述用户；当接收到所述用户的身份确认信息时，提取与所述用户相对应的签名信息对所述核签请求进行核签。因此，通过上述方法，通过接受用户的身份确认信息，提取与用户相对应的签名信息对文件进行电子核签，相当于在对用户进行了进一步的安全验证并成功后，便可自动提取出该用户的电子签名信息，提高了用户核签电子文件的便利性和安全性。\n\n附图说明\n\n[0028]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0029]图1是本发明较佳实施例提供的电子核签方法的流程图；\n\n[0030]图2是本发明较佳实施例提供的电子核签方法的流程图；\n\n[0031]图3是本发明较佳实施例提供的电子核签方法的流程图；\n\n[0032]图4是本发明较佳实施例提供的电子核签方法的流程图；\n\n[0033]图5是本发明较佳实施例提供的电子核签设备的连接示意图；\n\n[0034]图6是本发明较佳实施例提供的电子核签设备的连接示意图。\n\n[0035]图7是本发明较佳实施例提供的电子核签设备的连接示意图。\n\n具体实施方式\n\n[0036]在下文中，将更全面地描述本公开的各种实施例。本公开可具有各种实施例，并且可在其中做出调整和改变。然而，应理解：不存在将本公开的各种实施例限于在此公开的特定实施例的意图，而是应将本公开理解为涵盖落入本公开的各种实施例的精神和范围内的所有调整、等同物和/或可选方案。\n\n[0037]在下文中，可在本公开的各种实施例中使用的术语“包括”或“可包括”指示所公开的功能、操作或元件的存在，并且不限制一个或更多个功能、操作或元件的增加。此外，如在本公开的各种实施例中所使用，术语“包括”、“具有”及其同源词仅意在表示特定特征、数字、步骤、操作、元件、组件或前述项的组合，并且不应被理解为首先排除一个或更多个其它特征、数字、步骤、操作、元件、组件或前述项的组合的存在或增加一个或更多个特征、数字、步骤、操作、元件、组件或前述项的组合的可能性。\n\n[0038]在本公开的各种实施例中，表述“或”或“A或/和B中的至少一个”包括同时列出的文字的任何组合或所有组合。例如，表述“A或B”或“A或/和B中的至少一个”可包括A、可包括B或可包括A和B二者。\n\n[0039]在本公开的各种实施例中使用的表述(诸如“第一”、“第二”等)可修饰在各种实施例中的各种组成元件，不过可不限制相应组成元件。例如，以上表述并不限制所述元件的顺序和/或重要性。以上表述仅用于将一个元件与其它元件区别开的目的。例如，第一用户装置和第二用户装置指示不同用户装置，尽管二者都是用户装置。例如，在不脱离本公开的各种实施例的范围的情况下，第一元件可被称为第二元件，同样地，第二元件也可被称为第一元件。\n\n[0040]应注意到：如果描述将一个组成元件“连接”到另一组成元件，则可将第一组成元件直接连接到第二组成元件，并且可在第一组成元件和第二组成元件之间“连接”第三组成元件。相反地，当将一个组成元件“直接连接”到另一组成元件时，可理解为在第一组成元件和第二组成元件之间不存在第三组成元件。\n\n[0041]在本公开的各种实施例中使用的术语“用户”可指示使用电子装置的人或使用电子装置的装置(例如，人工智能电子装置)。\n\n[0042]在本公开的各种实施例中使用的术语仅用于描述特定实施例的目的并且并非意在限制本公开的各种实施例。如在此所使用，单数形式意在也包括复数形式，除非上下文清楚地另有指示。除非另有限定，否则在这里使用的所有术语(包括技术术语和科学术语)具有与本公开的各种实施例所属领域普通技术人员通常理解的含义相同的含义。所述术语(诸如在一般使用的词典中限定的术语)将被解释为具有与在相关技术领域中的语境含义相同的含义并且将不被解释为具有理想化的含义或过于正式的含义，除非在本公开的各种实施例中被清楚地限定。\n\n[0043]实施例1\n\n[0044]本发明实施例1提出了一种电子核签方法，其应用于电子核签过程，如图1所述，包括以下步骤：\n\n[0045]步骤101、当用户处于登录状态时，判断是否有需要所述用户处理的核签请求。\n\n[0046]具体地，在此通过一个具体的例子来对核签过程进行说明，在一个具体的实施例中，例如，当用户处于登录状态时，是指用户需要先进行登录，具体为需要发送登录请求，该登录请求可以包括有账户、密码等登录信息，而发起登录请求并通过登录验证的用户即为可以处理核签请求的用户。\n\n[0047]判断是否存在有需要该用户进行电子核签的请求，该请求可以是关于请假的电子核签流程，也可以是关于报销的电子核签流程，还可以是关于议会日程的电子核签流程等等。\n\n[0048]步骤102、若判断结果为是，则发送所述核签请求至所述用户；\n\n[0049]具体地，若步骤102中的判断结果为是，也即是存在有需要该用户进行处理的核签请求，则将所述核签请求发送至该用户。\n\n[0050]步骤103、当接收到所述用户的身份确认信息时，提取与所述用户相对应的签名信息对所述核签请求进行核签。\n\n[0051]具体地，当存在需要该用户进行处理的核签请求，并将所述核签请求发送至该用户后，接收到该用户的身份确认信息，即提取与该用户相对应的签名信息对所述核签请求进行核签。\n\n[0052]需要进一步说明的是，与该用户相对应的身份确认信息可以已录入于核签过程中所述涉及到的系统中，也可以未录入于该系统中。当该用户的身份确认信息未录入于系统中时，提示用户首先对身份确认信息进行录入。当系统中已录入有与该用户相对应的身份确认信息时，则将当前接收到的身份确认信息与已录入的该用户的身份确认信息进行比对，若比对无误，则提取与该用户相对应的签名信息对所述核签请求进行核签。\n\n[0053]在一个具体的实施例中，如图2所示，在该具体的实施例中，例如，存在有需要该用户进行处理的请假核签请求，将所述请假核签请求发送至该用户，该用户进行身份确认，当系统中未录入有与该用户相对应的身份确认信息时，提示用户录入身份确认信息，即步骤104；若系统中已录入有与该用户相对应的身份确认信息，则将当前接收到的身份确认信息与已录入的该用户的身份确认信息进行比对，即步骤105；若比对无误，则提取与该用户相对应的签名信息对所述请假核签请求进行核签，即步骤106；若比对比对错误，则拒绝提取与该用户相对应的签名信息，即步骤107。\n\n[0054]以上，关于步骤101中判断是否有需要所述用户处理的核签请求，具体包括以下步骤：\n\n[0055]步骤201、基于核签请求的当前流程所需要的核签人生成核签人数据库。\n\n[0056]具体地，基于核签请求的当前流程，是指一个核签请求可能需要数个流程，而基于核签请求的当前流程所需要的核签人生产核签人数据库，是指对所有核签请求的当前流程中需要的核签人生成一个当前核签人数据库。\n\n[0057]在一个具体的实施例中，如图3，以一具体的例子来进行说明，若当前流程有关于请假的核签请求，而该一个请假核签请求按流程顺序包括所属部门负责人A核签、人事部门负责人B核签、总经理C核签，而当前需要进行核签的核签人为总经理C，由此生成的核签人数据库中会只包括有总经理C的信息。\n\n[0058]以上是针对一个核签请求来进行的判断，若当前还有其他的核签请求，例如报销核签请求、议会流程核签请求等等，执行与上述请假核签请求相同的处理流程，生成对应的核签人数据库。\n\n[0059]步骤202、判断所述用户是否存在于所述核签人数据库中。\n\n[0060]具体地，在本实施例中，如图3，仍以上述为例进行说明，若当前处于登录状态的用户为总经理C，由于总经理C存在于当前核签人数据库中，则确定总经理C存在于所述核签人数据库中。\n\n[0061]而若是，若当前处于登录状态的用户为部门负责人A，由于不存在于所述核签人数据库中，因此可以确定部门负责人A不存在于所述核签人数据库中。\n\n[0062]当无法提取与所述用户相对应的签名信息时，向所述用户发送提示信息以提示所述用户录入签名信息。\n\n[0063]具体地，在一具体实施例中，如图4。\n\n[0064]步骤301、在接收到所述用户相对应的身份确认信息时，又无法提取到与所述用户相对应的签名信息时，就向所述用户发送提示信息，以提示所述用户录入签名信息。\n\n[0065]步骤302、在用户录入了签名信息后，再提取与该用户相对应的签名信息对所述核签请求进行核签。\n\n[0066]用户的身份确认信息，具体包括所述用户的指纹信息。\n\n[0067]具体地，用户的身份确认信息，是指接收到的用户的身份确认信息，是该用户的指纹信息。\n\n[0068]指纹信息识别率大，准确性高，还具有很高的唯一性，所以虹膜信息为用户的身份确认信息，在保证准确的同时还具有很高的安全性。\n\n[0069]用户的身份确认信息，具体包括所述用户的虹膜信息。\n\n[0070]具体地，用户的身份确认信息，是指接收到的用户的身份确认信息，是该用户的虹膜信息。\n\n[0071]虹膜信息识别率大，准确性高，还具有很高的唯一性，所以虹膜信息作为用户的身份确认信息，在保证准确的同时还具有很高的安全性。\n\n[0072]实施例2\n\n[0073]为了对本发明进行进一步的说明，本发明实施例2还公开了一种电子核签设备，其应用于电子核签过程，如图5所示，包括：\n\n[0074]判断模块401，用于：当用户处于登录状态时，判断是否有需要所述用户处理的核签请求；\n\n[0075]处理模块402，用于：当判断结果为是时，则发送所述核签请求至所述用户；\n\n[0076]核签模块403，用于：当接收到所述用户的身份确认信息时，提取与所述用户相对应的签名信息进行核签。\n\n[0077]具体地，若判断是否有需要所述用户处理的核签请求时，所述判断模块401，具体用于：\n\n[0078]基于核签请求的当前流程所需要的核签人生成核签人数据库；\n\n[0079]判断所述用户是否存在于所述核签人数据库中。\n\n[0080]具体地，若所述处理模块402在无法提取与所述用户相对应的签名信息时，所述处理模块402向所述用户发送提示信息以提示所述用户录入签名信息。\n\n[0081]具体地，还包括指纹录入模块404，如图6，用于录入所述用户的指纹信息。\n\n[0082]具体地，还包括虹膜录入模块405，如图7，用于录入所述用户的虹膜信息。\n\n[0083]本发明的一种电子核签方法及设备，其应用于电子核签过程，其中电子核签方法包括以下步骤：当用户处于登录状态时，判断是否有需要所述用户处理的核签请求；若判断结果为是，则发送所述核签请求至所述用户；当接收到所述用户的身份确认信息时，提取与所述用户相对应的签名信息对所述核签请求进行核签。因此，通过上述方法，通过接受用户的身份确认信息，提取与用户相对应的签名信息对文件进行电子核签，相当于在对用户进行了进一步的安全验证并成功后，便可自动提取出该用户的电子签名信息，提高了用户核签电子文件的便利性和安全性。\n\n[0084]本领域技术人员可以理解附图只是一个优选实施场景的示意图，附图中的模块或流程并不一定是实施本发明所必须的。\n\n[0085]本领域技术人员可以理解实施场景中的装置中的模块可以按照实施场景描述进行分布于实施场景的装置中，也可以进行相应变化位于不同于本实施场景的一个或多个装置中。上述实施场景的模块可以合并为一个模块，也可以进一步拆分成多个子模块。\n\n[0086]上述本发明序号仅仅为了描述，不代表实施场景的优劣。\n\n[0087]以上公开的仅为本发明的几个具体实施场景，但是，本发明并非局限于此，任何本领域的技术人员能思之的变化都应落入本发明的保护范围。\n\n', '技术领域\n\n[0001]本发明涉及电子信息的技术领域，具体而言，涉及一种电子核签方法及设备。\n\n背景技术\n\n[0002]传统的核签，是在纸质文件上签署姓名，代表签字者的授权和认可，这在日常的工作和生活中随处需要。目前，对于办公流程中常见的文件审批方式，是员工书面打印待审批文件、交给审批人手动签字、扫描该签字文件、发送传真或上传到邮件发送，作为线上审批证明文件使用。\n\n[0003]然而，这种传统的核签方式往往会受到地域和时间的限制，使得核签的便捷性和效率都大打折扣，也使得核签双方的业务往来和授权受到了限制。\n\n[0004]不过，随着自动化办公的普及，电子技术的不断发展，电子文件的签名模式走入人们的视线，通过核签电子文件，代表签字者的授权和认可，然而，在核签电子文件中，需要签字者对每一次的核签进行一次手写的签名，才能够将签名信息提取至电子文件中，整个过程比较繁琐，不够便利。而且，由于对签字者没有进一步的安全验证，所以还存在有一定的安全隐患。\n\n发明内容\n\n[0005]有鉴于此，本发明在于提供一种电子核签方法及设备，以便于在核签电子文件中更便捷，更安全。\n\n[0006]具体的，本发明提出了以下具体的实施例：\n\n[0007]本发明实施例提出了一种电子核签方法，其应用于电子核签过程，包括以下步骤：\n\n[0008]当用户处于登录状态时，判断是否有需要所述用户处理的核签请求；\n\n[0009]若判断结果为是，则发送所述核签请求至所述用户；\n\n[0010]当接收到所述用户的身份确认信息时，提取与所述用户相对应的签名信息对所述核签请求进行核签。\n\n[0011]进一步地，所述判断是否有需要所述用户处理的核签请求，具体包括：\n\n[0012]基于核签请求的当前流程所需要的核签人生成核签人数据库；\n\n[0013]判断所述用户是否存在于所述核签人数据库中。\n\n[0014]进一步地，当无法提取与所述用户相对应的签名信息时，向所述用户发送提示信息以提示所述用户录入签名信息。\n\n[0015]进一步地，所述用户的身份确认信息，具体包括所述用户的指纹信息。\n\n[0016]进一步地，所述用户的身份确认信息，具体包括所述用户的虹膜信息。\n\n[0017]本发明实施例还提出了一种电子核签设备，其应用于电子核签过程，包括：\n\n[0018]判断模块，用于：当用户处于登录状态时，判断是否有需要所述用户处理的核签请求；\n\n[0019]处理模块，用于：当判断结果为是时，则发送所述核签请求至所述用户；\n\n[0020]核签模块，用于：当接收到所述用户的身份确认信息时，提取与所述用户相对应的签名信息进行核签。\n\n[0021]进一步地，判断是否有需要所述用户处理的核签请求，所述判断模块，具体用于：\n\n[0022]基于核签请求的当前流程所需要的核签人生成核签人数据库；\n\n[0023]判断所述用户是否存在于所述核签人数据库中。\n\n[0024]进一步地，所述处理模块在无法提取与所述用户相对应的签名信息时，向所述用户发送提示信息以提示所述用户录入签名信息。\n\n[0025]进一步地，还包括指纹录入模块，用于录入所述用户的指纹信息。\n\n[0026]进一步地，还包括虹膜录入模块，用于录入所述用户的虹膜信息。\n\n[0027]本发明的一种电子核签方法及设备，其应用于电子核签过程，其中一种电子核签方法包括以下步骤：当用户处于登录状态时，判断是否有需要所述用户处理的核签请求；若判断结果为是，则发送所述核签请求至所述用户；当接收到所述用户的身份确认信息时，提取与所述用户相对应的签名信息对所述核签请求进行核签。因此，通过上述方法，通过接受用户的身份确认信息，提取与用户相对应的签名信息对文件进行电子核签，相当于在对用户进行了进一步的安全验证并成功后，便可自动提取出该用户的电子签名信息，提高了用户核签电子文件的便利性和安全性。\n\n附图说明\n\n[0028]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0029]图1是本发明较佳实施例提供的电子核签方法的流程图；\n\n[0030]图2是本发明较佳实施例提供的电子核签方法的流程图；\n\n[0031]图3是本发明较佳实施例提供的电子核签方法的流程图；\n\n[0032]图4是本发明较佳实施例提供的电子核签方法的流程图；\n\n[0033]图5是本发明较佳实施例提供的电子核签设备的连接示意图；\n\n[0034]图6是本发明较佳实施例提供的电子核签设备的连接示意图。\n\n[0035]图7是本发明较佳实施例提供的电子核签设备的连接示意图。\n\n具体实施方式\n\n[0036]在下文中，将更全面地描述本公开的各种实施例。本公开可具有各种实施例，并且可在其中做出调整和改变。然而，应理解：不存在将本公开的各种实施例限于在此公开的特定实施例的意图，而是应将本公开理解为涵盖落入本公开的各种实施例的精神和范围内的所有调整、等同物和/或可选方案。\n\n[0037]在下文中，可在本公开的各种实施例中使用的术语“包括”或“可包括”指示所公开的功能、操作或元件的存在，并且不限制一个或更多个功能、操作或元件的增加。此外，如在本公开的各种实施例中所使用，术语“包括”、“具有”及其同源词仅意在表示特定特征、数字、步骤、操作、元件、组件或前述项的组合，并且不应被理解为首先排除一个或更多个其它特征、数字、步骤、操作、元件、组件或前述项的组合的存在或增加一个或更多个特征、数字、步骤、操作、元件、组件或前述项的组合的可能性。\n\n[0038]在本公开的各种实施例中，表述“或”或“A或/和B中的至少一个”包括同时列出的文字的任何组合或所有组合。例如，表述“A或B”或“A或/和B中的至少一个”可包括A、可包括B或可包括A和B二者。\n\n[0039]在本公开的各种实施例中使用的表述(诸如“第一”、“第二”等)可修饰在各种实施例中的各种组成元件，不过可不限制相应组成元件。例如，以上表述并不限制所述元件的顺序和/或重要性。以上表述仅用于将一个元件与其它元件区别开的目的。例如，第一用户装置和第二用户装置指示不同用户装置，尽管二者都是用户装置。例如，在不脱离本公开的各种实施例的范围的情况下，第一元件可被称为第二元件，同样地，第二元件也可被称为第一元件。\n\n[0040]应注意到：如果描述将一个组成元件“连接”到另一组成元件，则可将第一组成元件直接连接到第二组成元件，并且可在第一组成元件和第二组成元件之间“连接”第三组成元件。相反地，当将一个组成元件“直接连接”到另一组成元件时，可理解为在第一组成元件和第二组成元件之间不存在第三组成元件。\n\n[0041]在本公开的各种实施例中使用的术语“用户”可指示使用电子装置的人或使用电子装置的装置(例如，人工智能电子装置)。\n\n[0042]在本公开的各种实施例中使用的术语仅用于描述特定实施例的目的并且并非意在限制本公开的各种实施例。如在此所使用，单数形式意在也包括复数形式，除非上下文清楚地另有指示。除非另有限定，否则在这里使用的所有术语(包括技术术语和科学术语)具有与本公开的各种实施例所属领域普通技术人员通常理解的含义相同的含义。所述术语(诸如在一般使用的词典中限定的术语)将被解释为具有与在相关技术领域中的语境含义相同的含义并且将不被解释为具有理想化的含义或过于正式的含义，除非在本公开的各种实施例中被清楚地限定。\n\n[0043]实施例1\n\n[0044]本发明实施例1提出了一种电子核签方法，其应用于电子核签过程，如图1所述，包括以下步骤：\n\n[0045]步骤101、当用户处于登录状态时，判断是否有需要所述用户处理的核签请求。\n\n[0046]具体地，在此通过一个具体的例子来对核签过程进行说明，在一个具体的实施例中，例如，当用户处于登录状态时，是指用户需要先进行登录，具体为需要发送登录请求，该登录请求可以包括有账户、密码等登录信息，而发起登录请求并通过登录验证的用户即为可以处理核签请求的用户。\n\n[0047]判断是否存在有需要该用户进行电子核签的请求，该请求可以是关于请假的电子核签流程，也可以是关于报销的电子核签流程，还可以是关于议会日程的电子核签流程等等。\n\n[0048]步骤102、若判断结果为是，则发送所述核签请求至所述用户；\n\n[0049]具体地，若步骤102中的判断结果为是，也即是存在有需要该用户进行处理的核签请求，则将所述核签请求发送至该用户。\n\n[0050]步骤103、当接收到所述用户的身份确认信息时，提取与所述用户相对应的签名信息对所述核签请求进行核签。\n\n[0051]具体地，当存在需要该用户进行处理的核签请求，并将所述核签请求发送至该用户后，接收到该用户的身份确认信息，即提取与该用户相对应的签名信息对所述核签请求进行核签。\n\n[0052]需要进一步说明的是，与该用户相对应的身份确认信息可以已录入于核签过程中所述涉及到的系统中，也可以未录入于该系统中。当该用户的身份确认信息未录入于系统中时，提示用户首先对身份确认信息进行录入。当系统中已录入有与该用户相对应的身份确认信息时，则将当前接收到的身份确认信息与已录入的该用户的身份确认信息进行比对，若比对无误，则提取与该用户相对应的签名信息对所述核签请求进行核签。\n\n[0053]在一个具体的实施例中，如图2所示，在该具体的实施例中，例如，存在有需要该用户进行处理的请假核签请求，将所述请假核签请求发送至该用户，该用户进行身份确认，当系统中未录入有与该用户相对应的身份确认信息时，提示用户录入身份确认信息，即步骤104；若系统中已录入有与该用户相对应的身份确认信息，则将当前接收到的身份确认信息与已录入的该用户的身份确认信息进行比对，即步骤105；若比对无误，则提取与该用户相对应的签名信息对所述请假核签请求进行核签，即步骤106；若比对比对错误，则拒绝提取与该用户相对应的签名信息，即步骤107。\n\n[0054]以上，关于步骤101中判断是否有需要所述用户处理的核签请求，具体包括以下步骤：\n\n[0055]步骤201、基于核签请求的当前流程所需要的核签人生成核签人数据库。\n\n[0056]具体地，基于核签请求的当前流程，是指一个核签请求可能需要数个流程，而基于核签请求的当前流程所需要的核签人生产核签人数据库，是指对所有核签请求的当前流程中需要的核签人生成一个当前核签人数据库。\n\n[0057]在一个具体的实施例中，如图3，以一具体的例子来进行说明，若当前流程有关于请假的核签请求，而该一个请假核签请求按流程顺序包括所属部门负责人A核签、人事部门负责人B核签、总经理C核签，而当前需要进行核签的核签人为总经理C，由此生成的核签人数据库中会只包括有总经理C的信息。\n\n[0058]以上是针对一个核签请求来进行的判断，若当前还有其他的核签请求，例如报销核签请求、议会流程核签请求等等，执行与上述请假核签请求相同的处理流程，生成对应的核签人数据库。\n\n[0059]步骤202、判断所述用户是否存在于所述核签人数据库中。\n\n[0060]具体地，在本实施例中，如图3，仍以上述为例进行说明，若当前处于登录状态的用户为总经理C，由于总经理C存在于当前核签人数据库中，则确定总经理C存在于所述核签人数据库中。\n\n[0061]而若是，若当前处于登录状态的用户为部门负责人A，由于不存在于所述核签人数据库中，因此可以确定部门负责人A不存在于所述核签人数据库中。\n\n[0062]当无法提取与所述用户相对应的签名信息时，向所述用户发送提示信息以提示所述用户录入签名信息。\n\n[0063]具体地，在一具体实施例中，如图4。\n\n[0064]步骤301、在接收到所述用户相对应的身份确认信息时，又无法提取到与所述用户相对应的签名信息时，就向所述用户发送提示信息，以提示所述用户录入签名信息。\n\n[0065]步骤302、在用户录入了签名信息后，再提取与该用户相对应的签名信息对所述核签请求进行核签。\n\n[0066]用户的身份确认信息，具体包括所述用户的指纹信息。\n\n[0067]具体地，用户的身份确认信息，是指接收到的用户的身份确认信息，是该用户的指纹信息。\n\n[0068]指纹信息识别率大，准确性高，还具有很高的唯一性，所以虹膜信息为用户的身份确认信息，在保证准确的同时还具有很高的安全性。\n\n[0069]用户的身份确认信息，具体包括所述用户的虹膜信息。\n\n[0070]具体地，用户的身份确认信息，是指接收到的用户的身份确认信息，是该用户的虹膜信息。\n\n[0071]虹膜信息识别率大，准确性高，还具有很高的唯一性，所以虹膜信息作为用户的身份确认信息，在保证准确的同时还具有很高的安全性。\n\n[0072]实施例2\n\n[0073]为了对本发明进行进一步的说明，本发明实施例2还公开了一种电子核签设备，其应用于电子核签过程，如图5所示，包括：\n\n[0074]判断模块401，用于：当用户处于登录状态时，判断是否有需要所述用户处理的核签请求；\n\n[0075]处理模块402，用于：当判断结果为是时，则发送所述核签请求至所述用户；\n\n[0076]核签模块403，用于：当接收到所述用户的身份确认信息时，提取与所述用户相对应的签名信息进行核签。\n\n[0077]具体地，若判断是否有需要所述用户处理的核签请求时，所述判断模块401，具体用于：\n\n[0078]基于核签请求的当前流程所需要的核签人生成核签人数据库；\n\n[0079]判断所述用户是否存在于所述核签人数据库中。\n\n[0080]具体地，若所述处理模块402在无法提取与所述用户相对应的签名信息时，所述处理模块402向所述用户发送提示信息以提示所述用户录入签名信息。\n\n[0081]具体地，还包括指纹录入模块404，如图6，用于录入所述用户的指纹信息。\n\n[0082]具体地，还包括虹膜录入模块405，如图7，用于录入所述用户的虹膜信息。\n\n[0083]本发明的一种电子核签方法及设备，其应用于电子核签过程，其中电子核签方法包括以下步骤：当用户处于登录状态时，判断是否有需要所述用户处理的核签请求；若判断结果为是，则发送所述核签请求至所述用户；当接收到所述用户的身份确认信息时，提取与所述用户相对应的签名信息对所述核签请求进行核签。因此，通过上述方法，通过接受用户的身份确认信息，提取与用户相对应的签名信息对文件进行电子核签，相当于在对用户进行了进一步的安全验证并成功后，便可自动提取出该用户的电子签名信息，提高了用户核签电子文件的便利性和安全性。\n\n[0084]本领域技术人员可以理解附图只是一个优选实施场景的示意图，附图中的模块或流程并不一定是实施本发明所必须的。\n\n[0085]本领域技术人员可以理解实施场景中的装置中的模块可以按照实施场景描述进行分布于实施场景的装置中，也可以进行相应变化位于不同于本实施场景的一个或多个装置中。上述实施场景的模块可以合并为一个模块，也可以进一步拆分成多个子模块。\n\n[0086]上述本发明序号仅仅为了描述，不代表实施场景的优劣。\n\n[0087]以上公开的仅为本发明的几个具体实施场景，但是，本发明并非局限于此，任何本领域的技术人员能思之的变化都应落入本发明的保护范围。\n\n');
INSERT INTO `os_patent_instruction_text` VALUES (11152, 24090, '技术领域\n\n[0001]本发明涉及网络技术领域，特别涉及一种签核发起用户管理方法和设备。\n\n背景技术\n\n[0002]在现有技术中，文件的签核一般是人工来进行的，在具体的过程中，需要将相应的文件打印出来，并以人工的方式传递给各个需要签核的签核人处，操作流程繁琐，费时费力，效率低下；且当某位签核人不在的时候，就会耽搁整个流程的正常进行。\n\n[0003]为此，目前有提到有一种电子签核的方式，但这种方式安全性不高，影响用户的体验。\n\n发明内容\n\n[0004]针对现有技术中的缺陷，本发明提出了一种签核发起用户管理方法和设备，用以克服现有技术中的缺陷，提高电子签核的安全性，保障用户的体验。\n\n[0005]具体的，本发明提出了以下具体的实施例：\n\n[0006]本发明实施例提出了一种签核发起用户管理方法，应用于电子签核过程，包括：\n\n[0007]当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；\n\n[0008]若检测结果为是，则对所述签核发起用户进行静态信息验证；\n\n[0009]若静态信息验证通过，则允许所述签核发起用户正常登录以便后续发起电子签核流程。\n\n[0010]进一步的，在一个具体的实施例中，所述静态信息包括：验证问题以及对应的答案；\n\n[0011]所述对所述签核发起用户进行静态信息验证，具体包括：\n\n[0012]提取所述签核发起用户预留的验证问题以及对应的答案；\n\n[0013]基于所述验证问题向所述签核发起用户进行验证，以获取到验证对应的反馈；\n\n[0014]若所述反馈与所述答案一致，则静态信息验证通过；\n\n[0015]若所述反馈与所述答案不一致，则静态信息验证不通过。\n\n[0016]进一步的，在一个具体的实施例中，所述静态信息包括：验证图片；\n\n[0017]所述对所述签核发起用户进行静态信息验证，具体包括：\n\n[0018]提取所述签核发起用户预留的验证图片；\n\n[0019]基于所述验证图片以及预留的其他图片生成包括验证图片在内的多个图片集；\n\n[0020]基于所述图片集对所述签核发起用户进行验证，以获取到验证时所选择的图片；\n\n[0021]若所选择的图片与所述验证图片一致，则静态信息验证通过；\n\n[0022]若所选择的图片与所述验证图片不一致，则静态信息验证不通过。\n\n[0023]进一步的，在一个具体的实施例中，所述登录环境具体包括登录IP；\n\n[0024]所述检测所述签核发起用户的登录环境是否异常，具体包括：\n\n[0025]获取所述签核发起用户发送登录请求时的登录IP；\n\n[0026]判断所述登录IP是否存在于预先存储的已验证IP数据库中；\n\n[0027]若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0028]若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0029]进一步的，在一个具体的实施例中，所述登录环境具体包括登录终端；\n\n[0030]所述检测所述签核发起用户的登录环境是否异常，具体包括：\n\n[0031]获取所述签核发起用户发送登录请求的终端的终端信息；\n\n[0032]判断所述终端信息是否存在于预先存储的已验证终端信息数据库中；\n\n[0033]若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0034]若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0035]本发明实施例还提出了一种签核发起用户管理设备，应用于电子签核过程，包括：\n\n[0036]检测模块，用于当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；\n\n[0037]验证模块，用于当检测结果为是时，对所述签核发起用户进行静态信息验证；\n\n[0038]处理模块，用于当静态信息验证通过时，允许所述签核发起用户正常登录以便后续发起电子签核流程。\n\n[0039]进一步的，在一个具体的实施例中，所述静态信息包括：验证问题以及对应的答案；\n\n[0040]所述验证模块，具体用于：\n\n[0041]提取所述签核发起用户预留的验证问题以及对应的答案；\n\n[0042]基于所述验证问题向所述签核发起用户进行验证，以获取到验证对应的反馈；\n\n[0043]若所述反馈与所述答案一致，则静态信息验证通过；\n\n[0044]若所述反馈与所述答案不一致，则静态信息验证不通过。\n\n[0045]进一步的，在一个具体的实施例中，所述静态信息包括：验证图片；\n\n[0046]所述验证模块，具体用于：\n\n[0047]提取所述签核发起用户预留的验证图片；\n\n[0048]基于所述验证图片以及预留的其他图片生成包括验证图片在内的多个图片集；\n\n[0049]基于所述图片集对所述签核发起用户进行验证，以获取到验证时所选择的图片；\n\n[0050]若所选择的图片与所述验证图片一致，则静态信息验证通过；\n\n[0051]若所选择的图片与所述验证图片不一致，则静态信息验证不通过。\n\n[0052]进一步的，在一个具体的实施例中，所述登录环境具体包括登录IP；\n\n[0053]所述检测模块，具体用于：\n\n[0054]获取所述签核发起用户发送登录请求时的登录IP；\n\n[0055]判断所述登录IP是否存在于预先存储的已验证IP数据库中；\n\n[0056]若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0057]若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0058]进一步的，在一个具体的实施例中，所述登录环境具体包括登录终端；\n\n[0059]所述检测模块，具体用于：\n\n[0060]获取所述签核发起用户发送登录请求的终端的终端信息；\n\n[0061]判断所述终端信息是否存在于预先存储的已验证终端信息数据库中；\n\n[0062]若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0063]若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0064]与现有技术相比，本发明实施例提出了一种签核发起用户管理方法和设备，应用于电子签核过程，其中，该签核发起用户管理方法包括：当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；若检测结果为是，则对所述签核发起用户进行静态信息验证；若静态信息验证通过，则允许所述签核发起用户正常登录以便后续发起电子签核流程。以此，通过上述方法，通过对签核发起用户进行验证，提高了电子签核过程的安全性，保障了用户的使用体验。\n\n附图说明\n\n[0065]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0066]图1为本发明实施例提出的一种签核发起用户管理方法流程示意图；\n\n[0067]图2为本发明实施例提出的一种检测签核发起用户的登录环境是否异常的方法流程示意图；\n\n[0068]图3为本发明实施例提出的一种检测签核发起用户的登录环境是否异常的方法流程示意图；\n\n[0069]图4为本发明实施例提出的一种检测签核发起用户的登录环境是否异常的方法的流程示意图；\n\n[0070]图5为本发明实施例提出的一种对签核发起用户进行静态信息验证的方法的流程示意图；\n\n[0071]图6为本发明实施例提出的一种对签核发起用户进行静态信息验证的方法的流程示意图；\n\n[0072]图7为本发明实施例提出的一种签核发起用户管理设备的结构示意图。\n\n具体实施方式\n\n[0073]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。通常在此处附图中描述和出示的本发明实施例的组件可以以各种不同的配置来布置和设计。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0074]针对现有技术中的缺陷，本发明人发现在实际的应用中，签核发起用户出现的安全问题较大，为此，本发明提出了一种签核发起用户管理方法和设备，应用于电子签核过程，用以提高电子签核过程的安全性。\n\n[0075]具体的，本发明提出了以下具体的实施例：\n\n[0076]实施例1\n\n[0077]本发明实施例1提出了一种签核发起用户管理方法，应用于电子签核过程，如图1所示，包括以下步骤：\n\n[0078]步骤101、当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常。\n\n[0079]具体的，在此通过一个具体的例子来对签核过程进行说明，在一个具体的实施例中，例如可以为请假，某公司的员工A想向公司请假，为此需要发起一个关于请假的电子签核流程，在该电子签核的过程中，员工A即为签核发起用户。\n\n[0080]而除了关于请假的电子签核以外，电子签核还可以有很多其他的实施例，例如关于报销的电子签核，以及关于升迁命令的电子签核等等，而对应的，发起签核过程的用户即为签核发起用户。\n\n[0081]签核发起用户首先需要登录，才能发起签核过程，因此签核发起用户会发送登录请求，具体的登录请求可以包括有账户，密码等登录信息，在一个具体的实施例中，输入账户以及密码的环境即为登录环境。\n\n[0082]在签核发起用户进行登录的过程中，也即发送登录请求时，对签核发起用户所在的登录环境进行检测，具体的检测是否异常；具体的检测方式有以下几种：\n\n[0083]方式1、在一个具体的实施例中，所述登录环境具体包括登录IP；\n\n[0084]由此，如图2所示，步骤101中的检测，也即所述检测所述签核发起用户的登录环境是否异常，具体包括：\n\n[0085]步骤11、获取所述签核发起用户发送登录请求时的登录IP；\n\n[0086]步骤12、判断所述登录IP是否存在于预先存储的异常IP数据库中；\n\n[0087]步骤13、若判断结果为是，则确定所述签核发起用户的登录环境异常；\n\n[0088]步骤14、若判断结果为否，则确定所述签核发起用户的登录环境不异常。\n\n[0089]以上，在具体的实施例中，会预先获取到异常IP的数据，并基于该异常IP的数据生成异常IP数据库，具体的异常IP数据可以从关于安全的数据库中进行获取，以此异常IP会与例如诈骗等行为有直接或者间接的关系，以此会存在有风险。\n\n[0090]由此，通过判断签核发起用户发送登录请求时的登录IP是否为有风险的IP,具体的，时通过判断登录IP是否存在于异常IP数据库中来进行的，若登录IP存在于异常IP数据库中,则说明登录IP是异常的IP，进而可以判断出登录环境异常，反之，则说明登录环境不异常，是正常的。\n\n[0091]方式2、在另一个具体的实施例中，所述登录环境具体包括登录IP；\n\n[0092]由此，如图3所示，所述检测所述签核发起用户的登录环境是否异常，具体包括：\n\n[0093]步骤21、获取所述签核发起用户发送登录请求时的登录IP；\n\n[0094]步骤22、判断所述登录IP是否存在于预先存储的已验证IP数据库中；\n\n[0095]步骤23、若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0096]步骤24、若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0097]在方式2中，具体的验证是基于IP来进行验证的，在签核发起用户发送登录请求时，获取到所在环境的IP(Internet Protocol,网络之间互连的协议)，而在事先，有基于分配的一批IP或者已验证过一批IP来形成了已验证IP数据库，由此进行判断所获取到的IP是否存在于已验证IP数据库中；若判断结果为是，则可以确定签核发起用户所在的登录环境为不异常，是安全的；反之，则可以确定签核发起用户所在的登录环境异常，是存在有风险的。\n\n[0098]方式3、所述登录环境具体包括登录终端；\n\n[0099]由此，如图4所示，所述检测所述签核发起用户的登录环境是否异常，具体包括：\n\n[0100]步骤31、获取所述签核发起用户发送登录请求的终端的终端信息；\n\n[0101]步骤32、判断所述终端信息是否存在于预先存储的已验证终端信息数据库中；\n\n[0102]步骤33、若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0103]步骤34、若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0104]方式3中的方式中，在事先会验证或者授权一批终端作为已验证终端，其对应的终端信息则形成已验证终端信息数据库，具体的终端信息可以包括有终端的标识，为终端设置的识别码等等。\n\n[0105]后续在进行验证时，提取到签核发起用户发送登录请求的终端的终端信息，并与已验证终端信息数据库中所存储的已验证终端信息进行匹配，若能匹配上，则说明签核发起用户所在的登录环境不异常，为正常环境；反之，则可以确定签核发起用户所在的登录环境异常，为存在有风险。\n\n[0106]在一个具体的应用场景中，除了分别对IP以及终端进行验证以外，还可以结合两者进行组合验证，例如可以结合方式1与方式3，还可以设置方式2与方式3的组合，在一个具体实施例中，可以设置只有当IP与终端都匹配上时，才验证通过；具体的验证过程可以基于实际的需要以及实际的环境进行设置，除了IP以及终端进行验证以外，还可以设置其他的验证方式，以及其他的组合验证方式。\n\n[0107]当步骤101中，检测的结果为否时，也即登录环境不异常，是正常的环境下时，可以允许所述签核发起用户正常登录以便后续发起电子签核流程。而所示检测结果为是时，则进行步骤102。\n\n[0108]步骤102、若检测结果为是，则对所述签核发起用户进行静态信息验证。\n\n[0109]具体的，如图5所示，在一个具体的实施例中，所述静态信息包括：验证问题以及对应的答案；\n\n[0110]所述对所述签核发起用户进行静态信息验证，具体包括：\n\n[0111]步骤41、提取所述签核发起用户预留的验证问题以及对应的答案；\n\n[0112]步骤42、基于所述验证问题向所述签核发起用户进行验证，以获取到验证对应的反馈；\n\n[0113]步骤43、若所述反馈与所述答案一致，则静态信息验证通过；\n\n[0114]步骤44、若所述反馈与所述答案不一致，则静态信息验证不通过。\n\n[0115]在该具体的实施例中，验证问题可以设置为例如“你的第一个宠物的名字”，对应的答案是之前签核发起用户自己填写的，例如为“小白”；还可以设置为“你最爱的人是谁”，对应的答案例如为“父母”等等，具体的可以预设有多个验证问题，对应的答案是用户填写的，也即只会有用户本人才知道答案。\n\n[0116]由此后续在进行静态信息验证时，可以向当前的签核发起用户显示一个或多个验证问题，需要当前的签核发起用户填写答案(也即验证对应的反馈)，来进行验证；而只有当填写的答案与预设的答案是一致时，验证才会通过。\n\n[0117]在一个具体的实施例中，例如有4个预设的验证问题，在实际的验证过程中，可以随机选取其中的3个来进行验证，只有当3个验证问题都回答正确时，才会验证通过。\n\n[0118]仍以上述为例来进行说明，在实际的验证过程中，可以随机选取其中的3个来进行验证，当右任意2个及以上的个验证问题回答正确时，就会验证通过。\n\n[0119]具体的，如图6所示，在一个具体的实施例中，所述静态信息包括：验证图片；\n\n[0120]所述对所述签核发起用户进行静态信息验证，具体包括：\n\n[0121]步骤51、提取所述签核发起用户预留的验证图片；\n\n[0122]步骤52、基于所述验证图片以及预留的其他图片生成包括验证图片在内的多个图片集；\n\n[0123]步骤53、基于所述图片集对所述签核发起用户进行验证，以获取到验证时所选择的图片；\n\n[0124]步骤54、若所选择的图片与所述验证图片一致，则静态信息验证通过；\n\n[0125]步骤55、若所选择的图片与所述验证图片不一致，则静态信息验证不通过。\n\n[0126]在该具体的实施例中，是采用的图片验证，具体的，事先会让签核发起用户预留有图片，该图片即为验证图片，具体的图片可以是签核发起用户上传的任意图片；后续需要验证时，基于签核发起用户预留的验证图片与其他的图片混在一起，形成一个图片集，例如验证图片为图片1，可以选取其他的与验证图片不一样的其他图片，例如可以选取其他的3个图片合在一起，形成一个包括4个图片的图片集，并展示给签核发起用户，指示让签核发起用户选择一个图片，只有当选取的图片为预留的验证图片时，才会验证通过。\n\n[0127]以上是以一个具体的例子来进行的说明，在另一个具体的实施例中，还可以在形成的图片集中设置有多张验证图片，此外，图片集中所包括的图片数量也是可以进行灵活调整的，而具体的验证也可以设置选取的图片与一定数量的验证图片一致即可。\n\n[0128]步骤103、若静态信息验证通过，则允许所述签核发起用户正常登录以便后续发起电子签核流程。\n\n[0129]以上，经过步骤101以及步骤102的检测以及验证，在登录环境异常的情况下，可以通过静态信息验证来确定是否允许签核发起用户正常登录以便后续发起电子签核流程，当静态信息验证通过时，说明签核发起用户处于正常状态，并没有发生被盗用身份等情况，因此可以按照正常的流程，在登录后发起电子签核。\n\n[0130]本发明实施例1提出了一种签核发起用户管理方法，应用于电子签核过程，包括：当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；若检测结果为是，则对所述签核发起用户进行静态信息验证；若静态信息验证通过，则允许所述签核发起用户正常登录以便后续发起电子签核流程。以此，通过上述方法，通过对签核发起用户进行验证，提高了电子签核过程的安全性，保障了用户的使用体验。\n\n[0131]实施例2\n\n[0132]为了对本发明进行进一步的说明，本发明实施例2还公开了一种签核发起用户管理设备，应用于电子签核过程，如图7所示，包括：\n\n[0133]检测模块201，用于当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；\n\n[0134]验证模块202，用于当检测结果为是时，对所述签核发起用户进行静态信息验证；\n\n[0135]处理模块203，用于当静态信息验证通过时，允许所述签核发起用户正常登录以便后续发起电子签核流程。\n\n[0136]具体的，所述静态信息包括：验证问题以及对应的答案；\n\n[0137]所述验证模块202，具体用于：\n\n[0138]提取所述签核发起用户预留的验证问题以及对应的答案；\n\n[0139]基于所述验证问题向所述签核发起用户进行验证，以获取到验证对应的反馈；\n\n[0140]若所述反馈与所述答案一致，则静态信息验证通过；\n\n[0141]若所述反馈与所述答案不一致，则静态信息验证不通过。\n\n[0142]具体的，所述静态信息包括：验证图片；\n\n[0143]所述验证模块202，具体用于：\n\n[0144]提取所述签核发起用户预留的验证图片；\n\n[0145]基于所述验证图片以及预留的其他图片生成包括验证图片在内的多个图片集；\n\n[0146]基于所述图片集对所述签核发起用户进行验证，以获取到验证时所选择的图片；\n\n[0147]若所选择的图片与所述验证图片一致，则静态信息验证通过；\n\n[0148]若所选择的图片与所述验证图片不一致，则静态信息验证不通过。\n\n[0149]具体的，所述登录环境具体包括登录IP；\n\n[0150]所述检测模块201，具体用于：\n\n[0151]获取所述签核发起用户发送登录请求时的登录IP；\n\n[0152]判断所述登录IP是否存在于预先存储的已验证IP数据库中；\n\n[0153]若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0154]若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0155]具体的，所述登录环境具体包括登录终端；\n\n[0156]所述检测模块201，具体用于：\n\n[0157]获取所述签核发起用户发送登录请求的终端的终端信息；\n\n[0158]判断所述终端信息是否存在于预先存储的已验证终端信息数据库中；\n\n[0159]若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0160]若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0161]与现有技术相比，本发明实施例提出了一种签核发起用户管理方法和设备，应用于电子签核过程，其中，该签核发起用户管理方法包括：当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；若检测结果为是，则对所述签核发起用户进行静态信息验证；若静态信息验证通过，则允许所述签核发起用户正常登录以便后续发起电子签核流程。以此，通过上述方法，通过对签核发起用户进行验证，提高了电子签核过程的安全性，保障了用户的使用体验。\n\n[0162]本领域技术人员可以理解附图只是一个优选实施场景的示意图，附图中的模块或流程并不一定是实施本发明所必须的。\n\n[0163]本领域技术人员可以理解实施场景中的装置中的模块可以按照实施场景描述进行分布于实施场景的装置中，也可以进行相应变化位于不同于本实施场景的一个或多个装置中。上述实施场景的模块可以合并为一个模块，也可以进一步拆分成多个子模块。\n\n[0164]上述本发明序号仅仅为了描述，不代表实施场景的优劣。\n\n[0165]以上公开的仅为本发明的几个具体实施场景，但是，本发明并非局限于此，任何本领域的技术人员能思之的变化都应落入本发明的保护范围。\n\n', '技术领域\n\n[0001]本发明涉及网络技术领域，特别涉及一种签核发起用户管理方法和设备。\n\n背景技术\n\n[0002]在现有技术中，文件的签核一般是人工来进行的，在具体的过程中，需要将相应的文件打印出来，并以人工的方式传递给各个需要签核的签核人处，操作流程繁琐，费时费力，效率低下；且当某位签核人不在的时候，就会耽搁整个流程的正常进行。\n\n[0003]为此，目前有提到有一种电子签核的方式，但这种方式安全性不高，影响用户的体验。\n\n发明内容\n\n[0004]针对现有技术中的缺陷，本发明提出了一种签核发起用户管理方法和设备，用以克服现有技术中的缺陷，提高电子签核的安全性，保障用户的体验。\n\n[0005]具体的，本发明提出了以下具体的实施例：\n\n[0006]本发明实施例提出了一种签核发起用户管理方法，应用于电子签核过程，包括：\n\n[0007]当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；\n\n[0008]若检测结果为是，则对所述签核发起用户进行静态信息验证；\n\n[0009]若静态信息验证通过，则允许所述签核发起用户正常登录以便后续发起电子签核流程。\n\n[0010]进一步的，在一个具体的实施例中，所述静态信息包括：验证问题以及对应的答案；\n\n[0011]所述对所述签核发起用户进行静态信息验证，具体包括：\n\n[0012]提取所述签核发起用户预留的验证问题以及对应的答案；\n\n[0013]基于所述验证问题向所述签核发起用户进行验证，以获取到验证对应的反馈；\n\n[0014]若所述反馈与所述答案一致，则静态信息验证通过；\n\n[0015]若所述反馈与所述答案不一致，则静态信息验证不通过。\n\n[0016]进一步的，在一个具体的实施例中，所述静态信息包括：验证图片；\n\n[0017]所述对所述签核发起用户进行静态信息验证，具体包括：\n\n[0018]提取所述签核发起用户预留的验证图片；\n\n[0019]基于所述验证图片以及预留的其他图片生成包括验证图片在内的多个图片集；\n\n[0020]基于所述图片集对所述签核发起用户进行验证，以获取到验证时所选择的图片；\n\n[0021]若所选择的图片与所述验证图片一致，则静态信息验证通过；\n\n[0022]若所选择的图片与所述验证图片不一致，则静态信息验证不通过。\n\n[0023]进一步的，在一个具体的实施例中，所述登录环境具体包括登录IP；\n\n[0024]所述检测所述签核发起用户的登录环境是否异常，具体包括：\n\n[0025]获取所述签核发起用户发送登录请求时的登录IP；\n\n[0026]判断所述登录IP是否存在于预先存储的已验证IP数据库中；\n\n[0027]若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0028]若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0029]进一步的，在一个具体的实施例中，所述登录环境具体包括登录终端；\n\n[0030]所述检测所述签核发起用户的登录环境是否异常，具体包括：\n\n[0031]获取所述签核发起用户发送登录请求的终端的终端信息；\n\n[0032]判断所述终端信息是否存在于预先存储的已验证终端信息数据库中；\n\n[0033]若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0034]若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0035]本发明实施例还提出了一种签核发起用户管理设备，应用于电子签核过程，包括：\n\n[0036]检测模块，用于当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；\n\n[0037]验证模块，用于当检测结果为是时，对所述签核发起用户进行静态信息验证；\n\n[0038]处理模块，用于当静态信息验证通过时，允许所述签核发起用户正常登录以便后续发起电子签核流程。\n\n[0039]进一步的，在一个具体的实施例中，所述静态信息包括：验证问题以及对应的答案；\n\n[0040]所述验证模块，具体用于：\n\n[0041]提取所述签核发起用户预留的验证问题以及对应的答案；\n\n[0042]基于所述验证问题向所述签核发起用户进行验证，以获取到验证对应的反馈；\n\n[0043]若所述反馈与所述答案一致，则静态信息验证通过；\n\n[0044]若所述反馈与所述答案不一致，则静态信息验证不通过。\n\n[0045]进一步的，在一个具体的实施例中，所述静态信息包括：验证图片；\n\n[0046]所述验证模块，具体用于：\n\n[0047]提取所述签核发起用户预留的验证图片；\n\n[0048]基于所述验证图片以及预留的其他图片生成包括验证图片在内的多个图片集；\n\n[0049]基于所述图片集对所述签核发起用户进行验证，以获取到验证时所选择的图片；\n\n[0050]若所选择的图片与所述验证图片一致，则静态信息验证通过；\n\n[0051]若所选择的图片与所述验证图片不一致，则静态信息验证不通过。\n\n[0052]进一步的，在一个具体的实施例中，所述登录环境具体包括登录IP；\n\n[0053]所述检测模块，具体用于：\n\n[0054]获取所述签核发起用户发送登录请求时的登录IP；\n\n[0055]判断所述登录IP是否存在于预先存储的已验证IP数据库中；\n\n[0056]若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0057]若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0058]进一步的，在一个具体的实施例中，所述登录环境具体包括登录终端；\n\n[0059]所述检测模块，具体用于：\n\n[0060]获取所述签核发起用户发送登录请求的终端的终端信息；\n\n[0061]判断所述终端信息是否存在于预先存储的已验证终端信息数据库中；\n\n[0062]若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0063]若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0064]与现有技术相比，本发明实施例提出了一种签核发起用户管理方法和设备，应用于电子签核过程，其中，该签核发起用户管理方法包括：当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；若检测结果为是，则对所述签核发起用户进行静态信息验证；若静态信息验证通过，则允许所述签核发起用户正常登录以便后续发起电子签核流程。以此，通过上述方法，通过对签核发起用户进行验证，提高了电子签核过程的安全性，保障了用户的使用体验。\n\n附图说明\n\n[0065]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0066]图1为本发明实施例提出的一种签核发起用户管理方法流程示意图；\n\n[0067]图2为本发明实施例提出的一种检测签核发起用户的登录环境是否异常的方法流程示意图；\n\n[0068]图3为本发明实施例提出的一种检测签核发起用户的登录环境是否异常的方法流程示意图；\n\n[0069]图4为本发明实施例提出的一种检测签核发起用户的登录环境是否异常的方法的流程示意图；\n\n[0070]图5为本发明实施例提出的一种对签核发起用户进行静态信息验证的方法的流程示意图；\n\n[0071]图6为本发明实施例提出的一种对签核发起用户进行静态信息验证的方法的流程示意图；\n\n[0072]图7为本发明实施例提出的一种签核发起用户管理设备的结构示意图。\n\n具体实施方式\n\n[0073]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。通常在此处附图中描述和出示的本发明实施例的组件可以以各种不同的配置来布置和设计。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0074]针对现有技术中的缺陷，本发明人发现在实际的应用中，签核发起用户出现的安全问题较大，为此，本发明提出了一种签核发起用户管理方法和设备，应用于电子签核过程，用以提高电子签核过程的安全性。\n\n[0075]具体的，本发明提出了以下具体的实施例：\n\n[0076]实施例1\n\n[0077]本发明实施例1提出了一种签核发起用户管理方法，应用于电子签核过程，如图1所示，包括以下步骤：\n\n[0078]步骤101、当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常。\n\n[0079]具体的，在此通过一个具体的例子来对签核过程进行说明，在一个具体的实施例中，例如可以为请假，某公司的员工A想向公司请假，为此需要发起一个关于请假的电子签核流程，在该电子签核的过程中，员工A即为签核发起用户。\n\n[0080]而除了关于请假的电子签核以外，电子签核还可以有很多其他的实施例，例如关于报销的电子签核，以及关于升迁命令的电子签核等等，而对应的，发起签核过程的用户即为签核发起用户。\n\n[0081]签核发起用户首先需要登录，才能发起签核过程，因此签核发起用户会发送登录请求，具体的登录请求可以包括有账户，密码等登录信息，在一个具体的实施例中，输入账户以及密码的环境即为登录环境。\n\n[0082]在签核发起用户进行登录的过程中，也即发送登录请求时，对签核发起用户所在的登录环境进行检测，具体的检测是否异常；具体的检测方式有以下几种：\n\n[0083]方式1、在一个具体的实施例中，所述登录环境具体包括登录IP；\n\n[0084]由此，如图2所示，步骤101中的检测，也即所述检测所述签核发起用户的登录环境是否异常，具体包括：\n\n[0085]步骤11、获取所述签核发起用户发送登录请求时的登录IP；\n\n[0086]步骤12、判断所述登录IP是否存在于预先存储的异常IP数据库中；\n\n[0087]步骤13、若判断结果为是，则确定所述签核发起用户的登录环境异常；\n\n[0088]步骤14、若判断结果为否，则确定所述签核发起用户的登录环境不异常。\n\n[0089]以上，在具体的实施例中，会预先获取到异常IP的数据，并基于该异常IP的数据生成异常IP数据库，具体的异常IP数据可以从关于安全的数据库中进行获取，以此异常IP会与例如诈骗等行为有直接或者间接的关系，以此会存在有风险。\n\n[0090]由此，通过判断签核发起用户发送登录请求时的登录IP是否为有风险的IP,具体的，时通过判断登录IP是否存在于异常IP数据库中来进行的，若登录IP存在于异常IP数据库中,则说明登录IP是异常的IP，进而可以判断出登录环境异常，反之，则说明登录环境不异常，是正常的。\n\n[0091]方式2、在另一个具体的实施例中，所述登录环境具体包括登录IP；\n\n[0092]由此，如图3所示，所述检测所述签核发起用户的登录环境是否异常，具体包括：\n\n[0093]步骤21、获取所述签核发起用户发送登录请求时的登录IP；\n\n[0094]步骤22、判断所述登录IP是否存在于预先存储的已验证IP数据库中；\n\n[0095]步骤23、若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0096]步骤24、若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0097]在方式2中，具体的验证是基于IP来进行验证的，在签核发起用户发送登录请求时，获取到所在环境的IP(Internet Protocol,网络之间互连的协议)，而在事先，有基于分配的一批IP或者已验证过一批IP来形成了已验证IP数据库，由此进行判断所获取到的IP是否存在于已验证IP数据库中；若判断结果为是，则可以确定签核发起用户所在的登录环境为不异常，是安全的；反之，则可以确定签核发起用户所在的登录环境异常，是存在有风险的。\n\n[0098]方式3、所述登录环境具体包括登录终端；\n\n[0099]由此，如图4所示，所述检测所述签核发起用户的登录环境是否异常，具体包括：\n\n[0100]步骤31、获取所述签核发起用户发送登录请求的终端的终端信息；\n\n[0101]步骤32、判断所述终端信息是否存在于预先存储的已验证终端信息数据库中；\n\n[0102]步骤33、若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0103]步骤34、若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0104]方式3中的方式中，在事先会验证或者授权一批终端作为已验证终端，其对应的终端信息则形成已验证终端信息数据库，具体的终端信息可以包括有终端的标识，为终端设置的识别码等等。\n\n[0105]后续在进行验证时，提取到签核发起用户发送登录请求的终端的终端信息，并与已验证终端信息数据库中所存储的已验证终端信息进行匹配，若能匹配上，则说明签核发起用户所在的登录环境不异常，为正常环境；反之，则可以确定签核发起用户所在的登录环境异常，为存在有风险。\n\n[0106]在一个具体的应用场景中，除了分别对IP以及终端进行验证以外，还可以结合两者进行组合验证，例如可以结合方式1与方式3，还可以设置方式2与方式3的组合，在一个具体实施例中，可以设置只有当IP与终端都匹配上时，才验证通过；具体的验证过程可以基于实际的需要以及实际的环境进行设置，除了IP以及终端进行验证以外，还可以设置其他的验证方式，以及其他的组合验证方式。\n\n[0107]当步骤101中，检测的结果为否时，也即登录环境不异常，是正常的环境下时，可以允许所述签核发起用户正常登录以便后续发起电子签核流程。而所示检测结果为是时，则进行步骤102。\n\n[0108]步骤102、若检测结果为是，则对所述签核发起用户进行静态信息验证。\n\n[0109]具体的，如图5所示，在一个具体的实施例中，所述静态信息包括：验证问题以及对应的答案；\n\n[0110]所述对所述签核发起用户进行静态信息验证，具体包括：\n\n[0111]步骤41、提取所述签核发起用户预留的验证问题以及对应的答案；\n\n[0112]步骤42、基于所述验证问题向所述签核发起用户进行验证，以获取到验证对应的反馈；\n\n[0113]步骤43、若所述反馈与所述答案一致，则静态信息验证通过；\n\n[0114]步骤44、若所述反馈与所述答案不一致，则静态信息验证不通过。\n\n[0115]在该具体的实施例中，验证问题可以设置为例如“你的第一个宠物的名字”，对应的答案是之前签核发起用户自己填写的，例如为“小白”；还可以设置为“你最爱的人是谁”，对应的答案例如为“父母”等等，具体的可以预设有多个验证问题，对应的答案是用户填写的，也即只会有用户本人才知道答案。\n\n[0116]由此后续在进行静态信息验证时，可以向当前的签核发起用户显示一个或多个验证问题，需要当前的签核发起用户填写答案(也即验证对应的反馈)，来进行验证；而只有当填写的答案与预设的答案是一致时，验证才会通过。\n\n[0117]在一个具体的实施例中，例如有4个预设的验证问题，在实际的验证过程中，可以随机选取其中的3个来进行验证，只有当3个验证问题都回答正确时，才会验证通过。\n\n[0118]仍以上述为例来进行说明，在实际的验证过程中，可以随机选取其中的3个来进行验证，当右任意2个及以上的个验证问题回答正确时，就会验证通过。\n\n[0119]具体的，如图6所示，在一个具体的实施例中，所述静态信息包括：验证图片；\n\n[0120]所述对所述签核发起用户进行静态信息验证，具体包括：\n\n[0121]步骤51、提取所述签核发起用户预留的验证图片；\n\n[0122]步骤52、基于所述验证图片以及预留的其他图片生成包括验证图片在内的多个图片集；\n\n[0123]步骤53、基于所述图片集对所述签核发起用户进行验证，以获取到验证时所选择的图片；\n\n[0124]步骤54、若所选择的图片与所述验证图片一致，则静态信息验证通过；\n\n[0125]步骤55、若所选择的图片与所述验证图片不一致，则静态信息验证不通过。\n\n[0126]在该具体的实施例中，是采用的图片验证，具体的，事先会让签核发起用户预留有图片，该图片即为验证图片，具体的图片可以是签核发起用户上传的任意图片；后续需要验证时，基于签核发起用户预留的验证图片与其他的图片混在一起，形成一个图片集，例如验证图片为图片1，可以选取其他的与验证图片不一样的其他图片，例如可以选取其他的3个图片合在一起，形成一个包括4个图片的图片集，并展示给签核发起用户，指示让签核发起用户选择一个图片，只有当选取的图片为预留的验证图片时，才会验证通过。\n\n[0127]以上是以一个具体的例子来进行的说明，在另一个具体的实施例中，还可以在形成的图片集中设置有多张验证图片，此外，图片集中所包括的图片数量也是可以进行灵活调整的，而具体的验证也可以设置选取的图片与一定数量的验证图片一致即可。\n\n[0128]步骤103、若静态信息验证通过，则允许所述签核发起用户正常登录以便后续发起电子签核流程。\n\n[0129]以上，经过步骤101以及步骤102的检测以及验证，在登录环境异常的情况下，可以通过静态信息验证来确定是否允许签核发起用户正常登录以便后续发起电子签核流程，当静态信息验证通过时，说明签核发起用户处于正常状态，并没有发生被盗用身份等情况，因此可以按照正常的流程，在登录后发起电子签核。\n\n[0130]本发明实施例1提出了一种签核发起用户管理方法，应用于电子签核过程，包括：当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；若检测结果为是，则对所述签核发起用户进行静态信息验证；若静态信息验证通过，则允许所述签核发起用户正常登录以便后续发起电子签核流程。以此，通过上述方法，通过对签核发起用户进行验证，提高了电子签核过程的安全性，保障了用户的使用体验。\n\n[0131]实施例2\n\n[0132]为了对本发明进行进一步的说明，本发明实施例2还公开了一种签核发起用户管理设备，应用于电子签核过程，如图7所示，包括：\n\n[0133]检测模块201，用于当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；\n\n[0134]验证模块202，用于当检测结果为是时，对所述签核发起用户进行静态信息验证；\n\n[0135]处理模块203，用于当静态信息验证通过时，允许所述签核发起用户正常登录以便后续发起电子签核流程。\n\n[0136]具体的，所述静态信息包括：验证问题以及对应的答案；\n\n[0137]所述验证模块202，具体用于：\n\n[0138]提取所述签核发起用户预留的验证问题以及对应的答案；\n\n[0139]基于所述验证问题向所述签核发起用户进行验证，以获取到验证对应的反馈；\n\n[0140]若所述反馈与所述答案一致，则静态信息验证通过；\n\n[0141]若所述反馈与所述答案不一致，则静态信息验证不通过。\n\n[0142]具体的，所述静态信息包括：验证图片；\n\n[0143]所述验证模块202，具体用于：\n\n[0144]提取所述签核发起用户预留的验证图片；\n\n[0145]基于所述验证图片以及预留的其他图片生成包括验证图片在内的多个图片集；\n\n[0146]基于所述图片集对所述签核发起用户进行验证，以获取到验证时所选择的图片；\n\n[0147]若所选择的图片与所述验证图片一致，则静态信息验证通过；\n\n[0148]若所选择的图片与所述验证图片不一致，则静态信息验证不通过。\n\n[0149]具体的，所述登录环境具体包括登录IP；\n\n[0150]所述检测模块201，具体用于：\n\n[0151]获取所述签核发起用户发送登录请求时的登录IP；\n\n[0152]判断所述登录IP是否存在于预先存储的已验证IP数据库中；\n\n[0153]若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0154]若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0155]具体的，所述登录环境具体包括登录终端；\n\n[0156]所述检测模块201，具体用于：\n\n[0157]获取所述签核发起用户发送登录请求的终端的终端信息；\n\n[0158]判断所述终端信息是否存在于预先存储的已验证终端信息数据库中；\n\n[0159]若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0160]若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0161]与现有技术相比，本发明实施例提出了一种签核发起用户管理方法和设备，应用于电子签核过程，其中，该签核发起用户管理方法包括：当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；若检测结果为是，则对所述签核发起用户进行静态信息验证；若静态信息验证通过，则允许所述签核发起用户正常登录以便后续发起电子签核流程。以此，通过上述方法，通过对签核发起用户进行验证，提高了电子签核过程的安全性，保障了用户的使用体验。\n\n[0162]本领域技术人员可以理解附图只是一个优选实施场景的示意图，附图中的模块或流程并不一定是实施本发明所必须的。\n\n[0163]本领域技术人员可以理解实施场景中的装置中的模块可以按照实施场景描述进行分布于实施场景的装置中，也可以进行相应变化位于不同于本实施场景的一个或多个装置中。上述实施场景的模块可以合并为一个模块，也可以进一步拆分成多个子模块。\n\n[0164]上述本发明序号仅仅为了描述，不代表实施场景的优劣。\n\n[0165]以上公开的仅为本发明的几个具体实施场景，但是，本发明并非局限于此，任何本领域的技术人员能思之的变化都应落入本发明的保护范围。\n\n');
INSERT INTO `os_patent_instruction_text` VALUES (11153, 24091, '技术领域\n\n[0001]本申请涉及互联网领域，具体而言，涉及一种签核请求处理方法及装置。\n\n背景技术\n\n[0002]在企业管理中，通常具有多种文件、单据、行政流程、货物出入库或者其他事项需要相关签核人进行签核。现有技术中，发起签核的用户通常可以直接对签核人进行选择，这样容易造成签核人选择随意，在签核人选择不正确的情况下，影响正常签核的效率。\n\n发明内容\n\n[0003]有鉴于此，本申请实施例提供了一种签核请求处理方法及装置，在接收到用户通过用户终端发送的签核请求后，判断用户具有的签核人选择权限，将签核人选择权限中的签核人名单发送给用户终端，以使用户可以进行选择的签核人仅为签核人名单中的签核人，确保签核人选择的正确性，改善上述问题。\n\n[0004]为了实现上述目的，本申请采用的技术方案如下：\n\n[0005]一种签核请求处理方法，所述方法包括：接收用户终端发送的签核请求；根据所述签核请求，判断所述用户终端对应的用户的签核人选择权限；将所述签核人选择权限中的签核人名单发送给所述用户终端，以使用户通过所述用户终端在所述签核人名单中选择签核人。\n\n[0006]一种签核请求处理装置，所述装置包括：第一接收模块，用于接收用户终端发送的签核请求；第一判断模块，用于根据所述签核请求，判断所述用户终端对应的用户的签核人选择权限；发送模块，用于将所述签核人选择权限中的签核人名单发送给所述用户终端，以使用户通过所述用户终端在所述签核人名单中选择签核人。\n\n[0007]本申请实施例提供的签核请求处理方法及装置，当接收到用户终端发送的签核请求后，首先判断用户终端对应的用户的签核人选择权限，并且将签核人选择权限中的签核人名单发送给用户终端，使用户可以通过用户终端选择的签核人为签核人名单中的签核人。该方法及装置使用户可以选择的签核人为其签核人选择权限内的签核人，避免选择到不在用户的签核人选择权限内的不正确的签核人。\n\n[0008]为使本申请的上述目的、特征和优点能更明显易懂，下文特举较佳实施例，并配合所附附图，作详细说明如下。\n\n附图说明\n\n[0009]为使本申请实施例的目的、技术方案和优点更加清楚，下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0010]图1示出了本申请实施例提供的服务器的结构示意图；\n\n[0011]图2示出了本申请第一实施例提供的签核请求处理方法的一种流程图；\n\n[0012]图3示出了本申请第一实施例提供的签核请求处理方法的另一种流程图；\n\n[0013]图4示出了本申请第一实施例提供的签核请求处理方法的又一种流程图；\n\n[0014]图5示出了本申请第二实施例提供的签核请求处理装置的功能模块图；\n\n[0015]图6示出了本申请第二实施例提供的签核请求处理装置的一种实施方式中第一判断模块的功能模块图；\n\n[0016]图7示出了本申请第二实施例提供的签核请求处理装置的另一种实施方式中第一判断模块的功能模块图。\n\n具体实施方式\n\n[0017]下面将结合本申请实施例中附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。通常在此处附图中描述和示出的本申请实施例的组件可以以各种不同的配置来布置和设计。因此，以下对在附图中提供的本申请的实施例的详细描述并非旨在限制要求保护的本申请的范围，而是仅仅表示本申请的选定实施例。基于本申请的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0018]应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。同时，在本申请的描述中，术语“第一”、“第二”等仅用于区分描述，而不能理解为指示或暗示相对重要性。\n\n[0019]如图1所示，是本申请服务器100的方框示意图。所述服务器100包括签核请求处理装置200、存储器101、存储控制器102、处理器103、外设接口104及其他。\n\n[0020]所述存储器101、存储控制器102、处理器103、外设接口104各元件相互之间直接或间接地电性连接，以实现数据的传输或交互。例如，这些元件相互之间可通过一条或多条通讯总线或信号线实现电性连接。所述签核请求处理装置200包括至少一个可以软件或固件(firmware)的形式存储于所述存储器101中或固化在所述服务器100的操作系统(operating system，OS)中的软件功能模块。所述处理器103用于执行存储器101中存储的可执行模块，例如所述签核请求处理装置200包括的软件功能模块或计算机程序。\n\n[0021]其中，存储器101可以是，但不限于，随机存取存储器(Random Access Memory，RAM)，只读存储器(Read Only Memory，ROM)，可编程只读存储器(Programmable Read-OnlyMemory，PROM)，可擦除只读存储器(Erasable Programmable Read-Only Memory，EPROM)，电可擦除只读存储器(Electric Erasable Programmable Read-Only Memory，EEPROM)等。其中，存储器101用于存储程序，所述处理器103在接收到执行指令后，执行所述程序，前述本申请实施例任一实施例揭示的流过程定义的服务器100所执行的方法可以应用于处理器103中，或者由处理器103实现。\n\n[0022]处理器103可能是一种集成电路芯片，具有信号的处理能力。上述的处理器103可以是通用处理器，包括中央处理器(Central Processing Unit，简称CPU)、网络处理器(Network Processor，简称NP)等；还可以是数字信号处理器(DSP)、专用集成电路(ASIC)、现成可编程门阵列(FPGA)或者其他可编程逻辑器件、分立门或者晶体管逻辑器件、分立硬件组件。可以实现或者执行本申请实施例中的公开的各方法、步骤及逻辑框图。通用处理器可以是微处理器或者该处理器103也可以是任何常规的处理器等。\n\n[0023]所述外设接口104将各种输入/输出装置耦合至处理器103以及存储器101。在一些实施例中，外设接口104，处理器103以及存储控制器102可以在单个芯片中实现。在其他一些实例中，他们可以分别由独立的芯片实现。\n\n[0024]可以理解的，图1所示的结构仅为示意，服务器100还可以包括比图1中所示更多或更少的组件，或者具有与图1所示不同的配置。图1中所示的各组件可以采用硬件、软件或其组合实现。\n\n[0025]第一实施例\n\n[0026]本申请实施例提供了一种签核请求处理方法，请参见图2，该方法包括：\n\n[0027]步骤S110：接收用户终端发送的签核请求。\n\n[0028]用户在进行行政审批、物品申购等申请流程中，通过用户终端向服务器100发送签核请求。可以理解的，用户可以通过安装于用户终端的客户端(如浏览器或第三方应用软件等)向服务器100发送签核请求。\n\n[0029]服务器100接收用户终端发送的签核请求。\n\n[0030]进一步的，在本实施例中，还可以包括用户登录。在完成用户登录相应的帐号后，服务器100才接收用户发送的签核请求，使该用户在登录后方可发送签核请求。\n\n[0031]具体的，在步骤S110之前，还可以包括：接收用户通过用户终端发送的登录请求，所述登录请求中包括所述用户终端对应的用户的身份标识以及用户输入的登录密码；判断所述身份标识与所述登录密码是否互相匹配，若是，允许用户登录。\n\n[0032]用户在用户终端输入登录帐号以及登录密码并触发登录请求。用户终端向服务器100发送登录请求，该登录请求中包括用户输入的登录密码以及表示用户唯一身份信息的身份标识。在本实施例中，该身份标识可以就是用户输入的登录帐号，也可以是根据登录帐号确定的与该登录帐号相互对应的身份标识。\n\n[0033]服务器100接收到登录请求后，对身份标识与登录密码进行匹配，判断该身份标识对应的登录密码是否是登录请求中的登录密码，若是，则登录请求中的身份标识与登录密码相匹配，允许用户登录，以使用户在成功登录后可以发起签核请求。\n\n[0034]当然，若登录请求中的身份标识与登录密码不匹配，则该用户无法登录该登录帐号，不能以该登录帐号发起签核请求，即不能向服务器100发送签核请求。\n\n[0035]另外，登录请求中也可以是包括登录帐号和登录密码，服务器100接收到登录请求后，根据登录帐号确定与该登录帐号对应的身份标识，再判断身份标识与登录密码的匹配性。\n\n[0036]当然，在本实施例中，具体的登录方式并不做限定。\n\n[0037]步骤S120：根据所述签核请求，判断所述用户终端对应的用户的签核人选择权限。\n\n[0038]服务器100接收到签核请求后，判断该用户终端对应的用户的签核人选择权限，即确定该用户可以选择哪些签核人对其签核请求进行签核。\n\n[0039]在本实施例提供的一种具体的实施方式中，所述签核请求中包括所述用户的身份标识。请参见图3，在该实施方式中，步骤S120可以包括：\n\n[0040]步骤S121A：根据所述身份标识，查找所述身份标识对应的签核人。\n\n[0041]在服务器100的存储器101或者相应的数据库中，存储有多个身份标识以及与每一个身份标识关联存储的该身份标识对应的签核人。在本实施例中，用户的身份标识对应的签核人为该身份标识对应的用户可以选择的签核人，并且，身份标识对应的签核人的数量由实际需求确定。\n\n[0042]服务器100接收到签核请求后，根据签核请求中的身份标识，查找与该身份标识关联存储的签核人，查找到的签核人即为该身份标识对应的签核人。\n\n[0043]步骤S122A：判定查找到的所有签核人为所述签核人选择权限范围内的签核人。\n\n[0044]服务器100判定查找到的与身份标识对应的所有签核人为该身份标识对应的用户的签核人选择权限范围内的签核人。\n\n[0045]本实例还提供了一种实施方式，在该实施方式中，所述签核请求中仍然包括所述用户的身份标识。具体的，如图4所示，该实施方式中，步骤S120中根据所述签核请求，判断所述用户终端对应的用户的签核人选择权限包括：\n\n[0046]步骤S121B：获取所述身份标识的权限值。\n\n[0047]在服务器100的存储器101或者相应的数据库中，可以存储每个身份标识的权限值，该权限值可以是表明该身份标识对应的用户的权限的一个量化值。权限值的具体确定在本实施例中并不做限定，可以是对该身份标识对应的用户做综合考量后获得的值，例如，该身份标识对应的用户所在部门、所在职位以及所涉及的业务等其中的一种或多种。\n\n[0048]权限值也可以仅仅是所述身份标识对应的用户所处的级别的级别值，该级别为用户的职级，由相关企业或者单位根据实际需要确定。例如，身份标识对应的用户的级别为第一级，其权限值可以为1。\n\n[0049]服务器100接收到签核请求后，根据签核请求中的身份标识获取存储的该身份标识的权限值。\n\n[0050]步骤S122B：查找与所述权限值的差值小于预设阈值的签核人。\n\n[0051]在服务器100的存储器101或者相应的数据库中，还可以存储签核人的权限值，该签核人可以对其他人发起的签核请求进行签核。可以理解的，存储方式可以是，存储签核人的身份标识，对应签核人的身份标识存储签核人的权限值。\n\n[0052]服务器100查找与获取到的权限值的差值小于预设阈值的签核人。具体查找方式可以是，求取每个签核人的权限值与获取到的权限值的差值，并且将得到的差值与预设阈值进行比较。则小于预设阈值的差值对应的签核人为查找到的与所述权限值的差值小于预设阈值的签核人。当然，在本实施例中，具体的查找方式并不做限定。\n\n[0053]并且，在本实施例中，预设阈值可以根据实际情况确定，根据实际需要的发起签核请求的用户的权限值与签核人的权限值的差值大小确定。\n\n[0054]步骤S123B：判定查找到的所有签核人为所述签核人选择权限范围内的签核人。\n\n[0055]服务器100判定查找到的所有签核人为发起签核请求的用户可以选择的签核人。\n\n[0056]步骤S130：将所述签核人选择权限中的签核人名单发送给所述用户终端，以使用户通过所述用户终端在所述签核人名单中选择签核人。\n\n[0057]该签核人名单为用户的签核人选择权限范围内的所有签核人的名单，服务器100将该签核人名单发送给用户终端，使用户通过所述用户终端在所述签核人名单中选择签核人。\n\n[0058]具体的，用户终端可以只能获得从服务器100发送的签核人名单，并且只显示接收到的服务器100发送的签核人名单中的签核人，则用户只能通过用户终端在签核人名单中进行签核人选择，使用户选择到的签核人都是用户选择权限范围内的签核人。\n\n[0059]当然，也不排除用户终端也可以预先存储有所有的签核人或者从服务器100获得所有的签核人，但是只显示签核人名单中的签核人。或者用户终端以不同的显示方式显示签核人名单中的签核人以及其他签核人，并且，只允许用户选择签核人名单中的签核人。例如，签核人名单中的签核人显示成可选的黑色，其他签核人显示成不可选的灰色。\n\n[0060]第二实施例\n\n[0061]本实施例提供了一种签核请求处理装置200，如图5所示，该装置200包括：第一接收模块210，用于接收用户终端发送的签核请求。第一判断模块220，用于根据所述签核请求，判断所述用户终端对应的用户的签核人选择权限。发送模块230，用于将所述签核人选择权限中的签核人名单发送给所述用户终端，以使用户通过所述用户终端在所述签核人名单中选择签核人。\n\n[0062]在本实施例提供的一种具体的实施方式中，所述签核请求中包括发起签核请求的用户的身份标识，具体的，如图6所示，在该实施方式中，第一判断模块220可以包括：查找单元221A，用于根据所述身份标识，查找所述身份标识对应的签核人；判定单元222A，用于判定查找到的所有签核人为所述签核人选择权限范围内的签核人。\n\n[0063]在本实施例提供的一种具体的实施方式中，所述签核请求中仍然包括发起签核请求的用户的身份标识，请参见图7，该第一判断模块220包括：权限值获取单元221B，用于获取所述身份标识的权限值；查找单元222B，用于查找与所述权限值的差值小于预设阈值的签核人；判定单元223B，用于判定查找到的所有签核人为所述签核人选择权限范围内的签核人。\n\n[0064]具体的，在本实施方式中，身份标识的权限值可以为该身份标识对应的用户所处的级别的级别值。\n\n[0065]进一步的，在该装置200中，在用户登录后接收签核请求，则，如图5所示，该装置200还可以包括：\n\n[0066]第二接收模块240，用于接收用户通过用户终端发送的登录请求，所述登录请求中包括所述用户终端对应的用户的身份标识以及用户输入的登录密码。第二判断模块250，用于判断所述身份标识与所述登录密码是否互相匹配，登录模块260，若所述第二判断模块判断结果为是，用于允许用户登录。\n\n[0067]综上所述，本申请实施例提供的签核请求处理方法及装置，在接收到用户通过用户终端发送的签核请求后，判断发送该签核请求的用户的签核人选择权限，并且将签核人选择权限中的签核人名单发送给用户终端，使用户只能在签核人名单中选择签核人，以使用户选择的签核人都是该用户的签核人选择权限范围内的签核人，避免用户选择签核人不正确造成签核流程不能顺利进行，影响签核效率，同时，也可以避免影响错误选择的签核人的工作。\n\n[0068]在本申请所提供的几个实施例中，应该理解到，所揭露的装置和方法，也可以通过其它的方式实现。以上所描述的装置实施例仅仅是示意性的，例如，附图中的流程图和框图显示了根据本申请的多个实施例的装置、方法和计算机程序产品的可能实现的体系架构、功能和操作。在这点上，流程图或框图中的每个方框可以代表一个模块、程序段或代码的一部分，所述模块、程序段或代码的一部分包含一个或多个用于实现规定的逻辑功能的可执行指令。也应当注意，在有些作为替换的实现方式中，方框中所标注的功能也可以以不同于附图中所标注的顺序发生。例如，两个连续的方框实际上可以基本并行地执行，它们有时也可以按相反的顺序执行，这依所涉及的功能而定。也要注意的是，框图和/或流程图中的每个方框、以及框图和/或流程图中的方框的组合，可以用执行规定的功能或动作的专用的基于硬件的系统来实现，或者可以用专用硬件与计算机指令的组合来实现。\n\n[0069]另外，在本申请各个实施例中的各功能模块可以集成在一起形成一个独立的部分，也可以是各个模块单独存在，也可以两个或两个以上模块集成形成一个独立的部分。\n\n[0070]所述功能如果以软件功能模块的形式实现并作为独立的产品销售或使用时，可以存储在一个计算机可读取存储介质中。基于这样的理解，本申请的技术方案本质上或者说对现有技术做出贡献的部分或者该技术方案的部分可以以软件产品的形式体现出来，该计算机软件产品存储在一个存储介质中，包括若干指令用以使得一台计算机设备(可以是个人计算机，服务器100，或者网络设备等)执行本申请各个实施例所述方法的全部或部分步骤。而前述的存储介质包括：U盘、移动硬盘、只读存储器(ROM，Read-Only Memory)、随机存取存储器(RAM，Random Access Memory)、磁碟或者光盘等各种可以存储程序代码的介质。需要说明的是，在本文中，诸如第一和第二、另一等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。\n\n[0071]以上所述仅为本申请的优选实施例而已，并不用于限制本申请，对于本领域的技术人员来说，本申请可以有各种更改和变化。凡在本申请的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本申请的保护范围之内。应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。\n\n[0072]以上所述，仅为本申请的具体实施方式，但本申请的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本申请的保护范围之内。因此，本申请的保护范围应所述以权利要求的保护范围为准。\n\n', '技术领域\n\n[0001]本申请涉及互联网领域，具体而言，涉及一种签核请求处理方法及装置。\n\n背景技术\n\n[0002]在企业管理中，通常具有多种文件、单据、行政流程、货物出入库或者其他事项需要相关签核人进行签核。现有技术中，发起签核的用户通常可以直接对签核人进行选择，这样容易造成签核人选择随意，在签核人选择不正确的情况下，影响正常签核的效率。\n\n发明内容\n\n[0003]有鉴于此，本申请实施例提供了一种签核请求处理方法及装置，在接收到用户通过用户终端发送的签核请求后，判断用户具有的签核人选择权限，将签核人选择权限中的签核人名单发送给用户终端，以使用户可以进行选择的签核人仅为签核人名单中的签核人，确保签核人选择的正确性，改善上述问题。\n\n[0004]为了实现上述目的，本申请采用的技术方案如下：\n\n[0005]一种签核请求处理方法，所述方法包括：接收用户终端发送的签核请求；根据所述签核请求，判断所述用户终端对应的用户的签核人选择权限；将所述签核人选择权限中的签核人名单发送给所述用户终端，以使用户通过所述用户终端在所述签核人名单中选择签核人。\n\n[0006]一种签核请求处理装置，所述装置包括：第一接收模块，用于接收用户终端发送的签核请求；第一判断模块，用于根据所述签核请求，判断所述用户终端对应的用户的签核人选择权限；发送模块，用于将所述签核人选择权限中的签核人名单发送给所述用户终端，以使用户通过所述用户终端在所述签核人名单中选择签核人。\n\n[0007]本申请实施例提供的签核请求处理方法及装置，当接收到用户终端发送的签核请求后，首先判断用户终端对应的用户的签核人选择权限，并且将签核人选择权限中的签核人名单发送给用户终端，使用户可以通过用户终端选择的签核人为签核人名单中的签核人。该方法及装置使用户可以选择的签核人为其签核人选择权限内的签核人，避免选择到不在用户的签核人选择权限内的不正确的签核人。\n\n[0008]为使本申请的上述目的、特征和优点能更明显易懂，下文特举较佳实施例，并配合所附附图，作详细说明如下。\n\n附图说明\n\n[0009]为使本申请实施例的目的、技术方案和优点更加清楚，下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0010]图1示出了本申请实施例提供的服务器的结构示意图；\n\n[0011]图2示出了本申请第一实施例提供的签核请求处理方法的一种流程图；\n\n[0012]图3示出了本申请第一实施例提供的签核请求处理方法的另一种流程图；\n\n[0013]图4示出了本申请第一实施例提供的签核请求处理方法的又一种流程图；\n\n[0014]图5示出了本申请第二实施例提供的签核请求处理装置的功能模块图；\n\n[0015]图6示出了本申请第二实施例提供的签核请求处理装置的一种实施方式中第一判断模块的功能模块图；\n\n[0016]图7示出了本申请第二实施例提供的签核请求处理装置的另一种实施方式中第一判断模块的功能模块图。\n\n具体实施方式\n\n[0017]下面将结合本申请实施例中附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。通常在此处附图中描述和示出的本申请实施例的组件可以以各种不同的配置来布置和设计。因此，以下对在附图中提供的本申请的实施例的详细描述并非旨在限制要求保护的本申请的范围，而是仅仅表示本申请的选定实施例。基于本申请的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本申请保护的范围。\n\n[0018]应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。同时，在本申请的描述中，术语“第一”、“第二”等仅用于区分描述，而不能理解为指示或暗示相对重要性。\n\n[0019]如图1所示，是本申请服务器100的方框示意图。所述服务器100包括签核请求处理装置200、存储器101、存储控制器102、处理器103、外设接口104及其他。\n\n[0020]所述存储器101、存储控制器102、处理器103、外设接口104各元件相互之间直接或间接地电性连接，以实现数据的传输或交互。例如，这些元件相互之间可通过一条或多条通讯总线或信号线实现电性连接。所述签核请求处理装置200包括至少一个可以软件或固件(firmware)的形式存储于所述存储器101中或固化在所述服务器100的操作系统(operating system，OS)中的软件功能模块。所述处理器103用于执行存储器101中存储的可执行模块，例如所述签核请求处理装置200包括的软件功能模块或计算机程序。\n\n[0021]其中，存储器101可以是，但不限于，随机存取存储器(Random Access Memory，RAM)，只读存储器(Read Only Memory，ROM)，可编程只读存储器(Programmable Read-OnlyMemory，PROM)，可擦除只读存储器(Erasable Programmable Read-Only Memory，EPROM)，电可擦除只读存储器(Electric Erasable Programmable Read-Only Memory，EEPROM)等。其中，存储器101用于存储程序，所述处理器103在接收到执行指令后，执行所述程序，前述本申请实施例任一实施例揭示的流过程定义的服务器100所执行的方法可以应用于处理器103中，或者由处理器103实现。\n\n[0022]处理器103可能是一种集成电路芯片，具有信号的处理能力。上述的处理器103可以是通用处理器，包括中央处理器(Central Processing Unit，简称CPU)、网络处理器(Network Processor，简称NP)等；还可以是数字信号处理器(DSP)、专用集成电路(ASIC)、现成可编程门阵列(FPGA)或者其他可编程逻辑器件、分立门或者晶体管逻辑器件、分立硬件组件。可以实现或者执行本申请实施例中的公开的各方法、步骤及逻辑框图。通用处理器可以是微处理器或者该处理器103也可以是任何常规的处理器等。\n\n[0023]所述外设接口104将各种输入/输出装置耦合至处理器103以及存储器101。在一些实施例中，外设接口104，处理器103以及存储控制器102可以在单个芯片中实现。在其他一些实例中，他们可以分别由独立的芯片实现。\n\n[0024]可以理解的，图1所示的结构仅为示意，服务器100还可以包括比图1中所示更多或更少的组件，或者具有与图1所示不同的配置。图1中所示的各组件可以采用硬件、软件或其组合实现。\n\n[0025]第一实施例\n\n[0026]本申请实施例提供了一种签核请求处理方法，请参见图2，该方法包括：\n\n[0027]步骤S110：接收用户终端发送的签核请求。\n\n[0028]用户在进行行政审批、物品申购等申请流程中，通过用户终端向服务器100发送签核请求。可以理解的，用户可以通过安装于用户终端的客户端(如浏览器或第三方应用软件等)向服务器100发送签核请求。\n\n[0029]服务器100接收用户终端发送的签核请求。\n\n[0030]进一步的，在本实施例中，还可以包括用户登录。在完成用户登录相应的帐号后，服务器100才接收用户发送的签核请求，使该用户在登录后方可发送签核请求。\n\n[0031]具体的，在步骤S110之前，还可以包括：接收用户通过用户终端发送的登录请求，所述登录请求中包括所述用户终端对应的用户的身份标识以及用户输入的登录密码；判断所述身份标识与所述登录密码是否互相匹配，若是，允许用户登录。\n\n[0032]用户在用户终端输入登录帐号以及登录密码并触发登录请求。用户终端向服务器100发送登录请求，该登录请求中包括用户输入的登录密码以及表示用户唯一身份信息的身份标识。在本实施例中，该身份标识可以就是用户输入的登录帐号，也可以是根据登录帐号确定的与该登录帐号相互对应的身份标识。\n\n[0033]服务器100接收到登录请求后，对身份标识与登录密码进行匹配，判断该身份标识对应的登录密码是否是登录请求中的登录密码，若是，则登录请求中的身份标识与登录密码相匹配，允许用户登录，以使用户在成功登录后可以发起签核请求。\n\n[0034]当然，若登录请求中的身份标识与登录密码不匹配，则该用户无法登录该登录帐号，不能以该登录帐号发起签核请求，即不能向服务器100发送签核请求。\n\n[0035]另外，登录请求中也可以是包括登录帐号和登录密码，服务器100接收到登录请求后，根据登录帐号确定与该登录帐号对应的身份标识，再判断身份标识与登录密码的匹配性。\n\n[0036]当然，在本实施例中，具体的登录方式并不做限定。\n\n[0037]步骤S120：根据所述签核请求，判断所述用户终端对应的用户的签核人选择权限。\n\n[0038]服务器100接收到签核请求后，判断该用户终端对应的用户的签核人选择权限，即确定该用户可以选择哪些签核人对其签核请求进行签核。\n\n[0039]在本实施例提供的一种具体的实施方式中，所述签核请求中包括所述用户的身份标识。请参见图3，在该实施方式中，步骤S120可以包括：\n\n[0040]步骤S121A：根据所述身份标识，查找所述身份标识对应的签核人。\n\n[0041]在服务器100的存储器101或者相应的数据库中，存储有多个身份标识以及与每一个身份标识关联存储的该身份标识对应的签核人。在本实施例中，用户的身份标识对应的签核人为该身份标识对应的用户可以选择的签核人，并且，身份标识对应的签核人的数量由实际需求确定。\n\n[0042]服务器100接收到签核请求后，根据签核请求中的身份标识，查找与该身份标识关联存储的签核人，查找到的签核人即为该身份标识对应的签核人。\n\n[0043]步骤S122A：判定查找到的所有签核人为所述签核人选择权限范围内的签核人。\n\n[0044]服务器100判定查找到的与身份标识对应的所有签核人为该身份标识对应的用户的签核人选择权限范围内的签核人。\n\n[0045]本实例还提供了一种实施方式，在该实施方式中，所述签核请求中仍然包括所述用户的身份标识。具体的，如图4所示，该实施方式中，步骤S120中根据所述签核请求，判断所述用户终端对应的用户的签核人选择权限包括：\n\n[0046]步骤S121B：获取所述身份标识的权限值。\n\n[0047]在服务器100的存储器101或者相应的数据库中，可以存储每个身份标识的权限值，该权限值可以是表明该身份标识对应的用户的权限的一个量化值。权限值的具体确定在本实施例中并不做限定，可以是对该身份标识对应的用户做综合考量后获得的值，例如，该身份标识对应的用户所在部门、所在职位以及所涉及的业务等其中的一种或多种。\n\n[0048]权限值也可以仅仅是所述身份标识对应的用户所处的级别的级别值，该级别为用户的职级，由相关企业或者单位根据实际需要确定。例如，身份标识对应的用户的级别为第一级，其权限值可以为1。\n\n[0049]服务器100接收到签核请求后，根据签核请求中的身份标识获取存储的该身份标识的权限值。\n\n[0050]步骤S122B：查找与所述权限值的差值小于预设阈值的签核人。\n\n[0051]在服务器100的存储器101或者相应的数据库中，还可以存储签核人的权限值，该签核人可以对其他人发起的签核请求进行签核。可以理解的，存储方式可以是，存储签核人的身份标识，对应签核人的身份标识存储签核人的权限值。\n\n[0052]服务器100查找与获取到的权限值的差值小于预设阈值的签核人。具体查找方式可以是，求取每个签核人的权限值与获取到的权限值的差值，并且将得到的差值与预设阈值进行比较。则小于预设阈值的差值对应的签核人为查找到的与所述权限值的差值小于预设阈值的签核人。当然，在本实施例中，具体的查找方式并不做限定。\n\n[0053]并且，在本实施例中，预设阈值可以根据实际情况确定，根据实际需要的发起签核请求的用户的权限值与签核人的权限值的差值大小确定。\n\n[0054]步骤S123B：判定查找到的所有签核人为所述签核人选择权限范围内的签核人。\n\n[0055]服务器100判定查找到的所有签核人为发起签核请求的用户可以选择的签核人。\n\n[0056]步骤S130：将所述签核人选择权限中的签核人名单发送给所述用户终端，以使用户通过所述用户终端在所述签核人名单中选择签核人。\n\n[0057]该签核人名单为用户的签核人选择权限范围内的所有签核人的名单，服务器100将该签核人名单发送给用户终端，使用户通过所述用户终端在所述签核人名单中选择签核人。\n\n[0058]具体的，用户终端可以只能获得从服务器100发送的签核人名单，并且只显示接收到的服务器100发送的签核人名单中的签核人，则用户只能通过用户终端在签核人名单中进行签核人选择，使用户选择到的签核人都是用户选择权限范围内的签核人。\n\n[0059]当然，也不排除用户终端也可以预先存储有所有的签核人或者从服务器100获得所有的签核人，但是只显示签核人名单中的签核人。或者用户终端以不同的显示方式显示签核人名单中的签核人以及其他签核人，并且，只允许用户选择签核人名单中的签核人。例如，签核人名单中的签核人显示成可选的黑色，其他签核人显示成不可选的灰色。\n\n[0060]第二实施例\n\n[0061]本实施例提供了一种签核请求处理装置200，如图5所示，该装置200包括：第一接收模块210，用于接收用户终端发送的签核请求。第一判断模块220，用于根据所述签核请求，判断所述用户终端对应的用户的签核人选择权限。发送模块230，用于将所述签核人选择权限中的签核人名单发送给所述用户终端，以使用户通过所述用户终端在所述签核人名单中选择签核人。\n\n[0062]在本实施例提供的一种具体的实施方式中，所述签核请求中包括发起签核请求的用户的身份标识，具体的，如图6所示，在该实施方式中，第一判断模块220可以包括：查找单元221A，用于根据所述身份标识，查找所述身份标识对应的签核人；判定单元222A，用于判定查找到的所有签核人为所述签核人选择权限范围内的签核人。\n\n[0063]在本实施例提供的一种具体的实施方式中，所述签核请求中仍然包括发起签核请求的用户的身份标识，请参见图7，该第一判断模块220包括：权限值获取单元221B，用于获取所述身份标识的权限值；查找单元222B，用于查找与所述权限值的差值小于预设阈值的签核人；判定单元223B，用于判定查找到的所有签核人为所述签核人选择权限范围内的签核人。\n\n[0064]具体的，在本实施方式中，身份标识的权限值可以为该身份标识对应的用户所处的级别的级别值。\n\n[0065]进一步的，在该装置200中，在用户登录后接收签核请求，则，如图5所示，该装置200还可以包括：\n\n[0066]第二接收模块240，用于接收用户通过用户终端发送的登录请求，所述登录请求中包括所述用户终端对应的用户的身份标识以及用户输入的登录密码。第二判断模块250，用于判断所述身份标识与所述登录密码是否互相匹配，登录模块260，若所述第二判断模块判断结果为是，用于允许用户登录。\n\n[0067]综上所述，本申请实施例提供的签核请求处理方法及装置，在接收到用户通过用户终端发送的签核请求后，判断发送该签核请求的用户的签核人选择权限，并且将签核人选择权限中的签核人名单发送给用户终端，使用户只能在签核人名单中选择签核人，以使用户选择的签核人都是该用户的签核人选择权限范围内的签核人，避免用户选择签核人不正确造成签核流程不能顺利进行，影响签核效率，同时，也可以避免影响错误选择的签核人的工作。\n\n[0068]在本申请所提供的几个实施例中，应该理解到，所揭露的装置和方法，也可以通过其它的方式实现。以上所描述的装置实施例仅仅是示意性的，例如，附图中的流程图和框图显示了根据本申请的多个实施例的装置、方法和计算机程序产品的可能实现的体系架构、功能和操作。在这点上，流程图或框图中的每个方框可以代表一个模块、程序段或代码的一部分，所述模块、程序段或代码的一部分包含一个或多个用于实现规定的逻辑功能的可执行指令。也应当注意，在有些作为替换的实现方式中，方框中所标注的功能也可以以不同于附图中所标注的顺序发生。例如，两个连续的方框实际上可以基本并行地执行，它们有时也可以按相反的顺序执行，这依所涉及的功能而定。也要注意的是，框图和/或流程图中的每个方框、以及框图和/或流程图中的方框的组合，可以用执行规定的功能或动作的专用的基于硬件的系统来实现，或者可以用专用硬件与计算机指令的组合来实现。\n\n[0069]另外，在本申请各个实施例中的各功能模块可以集成在一起形成一个独立的部分，也可以是各个模块单独存在，也可以两个或两个以上模块集成形成一个独立的部分。\n\n[0070]所述功能如果以软件功能模块的形式实现并作为独立的产品销售或使用时，可以存储在一个计算机可读取存储介质中。基于这样的理解，本申请的技术方案本质上或者说对现有技术做出贡献的部分或者该技术方案的部分可以以软件产品的形式体现出来，该计算机软件产品存储在一个存储介质中，包括若干指令用以使得一台计算机设备(可以是个人计算机，服务器100，或者网络设备等)执行本申请各个实施例所述方法的全部或部分步骤。而前述的存储介质包括：U盘、移动硬盘、只读存储器(ROM，Read-Only Memory)、随机存取存储器(RAM，Random Access Memory)、磁碟或者光盘等各种可以存储程序代码的介质。需要说明的是，在本文中，诸如第一和第二、另一等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。\n\n[0071]以上所述仅为本申请的优选实施例而已，并不用于限制本申请，对于本领域的技术人员来说，本申请可以有各种更改和变化。凡在本申请的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本申请的保护范围之内。应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。\n\n[0072]以上所述，仅为本申请的具体实施方式，但本申请的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本申请的保护范围之内。因此，本申请的保护范围应所述以权利要求的保护范围为准。\n\n');
INSERT INTO `os_patent_instruction_text` VALUES (11154, 24092, '技术领域\n\n[0001]本发明涉及网络技术领域，特别涉及一种签核发起用户管理方法和设备。\n\n背景技术\n\n[0002]在现有技术中，文件的签核一般是人工来进行的，在具体的过程中，需要将相应的文件打印出来，并以人工的方式传递给各个需要签核的签核人处，操作流程繁琐，费时费力，效率低下；且当某位签核人不在的时候，就会耽搁整个流程的正常进行。\n\n[0003]为此，目前有提到有一种电子签核的方式，但这种方式安全性不高，影响用户的体验。\n\n发明内容\n\n[0004]针对现有技术中的缺陷，本发明提出了一种签核发起用户管理方法和设备，用以克服现有技术中的缺陷，提高电子签核的安全性，保障用户的体验。\n\n[0005]具体的，本发明提出了以下具体的实施例：\n\n[0006]本发明实施例提出了一种签核发起用户管理方法，应用于电子签核过程，包括：\n\n[0007]当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；\n\n[0008]若判断结果为是，则当接收到对应所述签核发起用户的签核请求时，降低所述签核发起用户的权限，以使得所述签核发起用户无法对所述签核请求进行签核。\n\n[0009]进一步的，在一个具体的实施例中，该方法还包括：\n\n[0010]基于所述签核请求生成简略信息；\n\n[0011]将所述简略信息发送给所述签核发起用户。\n\n[0012]进一步的，在一个具体的实施例中，该方法还包括：\n\n[0013]基于对签核发起用户的登录环境是否异常的检测，生成提示信息；其中，所述提示信息中包括有权限受限的原因；\n\n[0014]将所述提示信息发送给所述签核发起用户。\n\n[0015]进一步的，在一个具体的实施例中，对签核请求进行签核对应设置有权限需求，对应不同签核请求的签核设置有不同的权限需要；\n\n[0016]所述“当接收到对应所述签核发起用户的签核请求时，降低所述签核发起用户的权限，以使得所述签核发起用户无法对所述签核请求进行签核”，包括：\n\n[0017]当接收到对应所述签核发起用户的签核请求时，判断签核所述签核请求所需要的权限；\n\n[0018]将所述签核发起用户的权限进行降低，降低后的权限低于签核所述签核请求所需要的权限。\n\n[0019]进一步的，在一个具体的实施例中，该方法还包括：\n\n[0020]若判断结果为否，则当接收到对应所述签核发起用户的签核请求时，指示所述签核发起用户对所述签核请求进行签核。\n\n[0021]本发明实施例还提出了一种签核发起用户管理设备，应用于电子签核过程，包括：\n\n[0022]检测模块，用于当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；\n\n[0023]处理模块，用于当判断结果为是，且接收到对应所述签核发起用户的签核请求时，降低所述签核发起用户的权限，以使得所述签核发起用户无法对所述签核请求进行签核。\n\n[0024]进一步的，在一个具体的实施例中，该设备还包括：\n\n[0025]通知模块，用于基于所述签核请求生成简略信息；\n\n[0026]将所述简略信息发送给所述签核发起用户。\n\n[0027]进一步的，在一个具体的实施例中，该设备还包括：\n\n[0028]提示模块，用于基于对签核发起用户的登录环境是否异常的检测，生成提示信息；其中，所述提示信息中包括有权限受限的原因；\n\n[0029]将所述提示信息发送给所述签核发起用户。\n\n[0030]进一步的，在一个具体的实施例中，对签核请求进行签核对应设置有权限需求，对应不同签核请求的签核设置有不同的权限需要；\n\n[0031]所述处理模块，用于：\n\n[0032]当接收到对应所述签核发起用户的签核请求时，判断签核所述签核请求所需要的权限；\n\n[0033]将所述签核发起用户的权限进行降低，降低后的权限低于签核所述签核请求所需要的权限。\n\n[0034]进一步的，在一个具体的实施例中，该设备还包括：\n\n[0035]指示模块，用于当判断结果为否，且接收到对应所述签核发起用户的签核请求时，指示所述签核发起用户对所述签核请求进行签核。\n\n[0036]与现有技术相比，本发明实施例提出了一种签核发起用户管理方法和设备，应用于电子签核过程，其中，该签核发起用户管理方法包括：当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；若判断结果为是，则当接收到对应所述签核发起用户的签核请求时，降低所述签核发起用户的权限，以使得所述签核发起用户无法对所述签核请求进行签核。。以此，通过上述方法，提高了电子签核过程的安全性，保障了用户的使用体验。\n\n附图说明\n\n[0037]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0038]图1为本发明实施例提出的一种签核发起用户管理方法流程示意图；\n\n[0039]图2为本发明实施例提出的一种检测签核发起用户的登录环境是否异常的方法流程示意图；\n\n[0040]图3为本发明实施例提出的一种检测签核发起用户的登录环境是否异常的方法流程示意图；\n\n[0041]图4为本发明实施例提出的一种检测签核发起用户的登录环境是否异常的方法的流程示意图；\n\n[0042]图5为本发明实施例提出的一种签核发起用户管理设备的结构示意图。\n\n具体实施方式\n\n[0043]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。通常在此处附图中描述和出示的本发明实施例的组件可以以各种不同的配置来布置和设计。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0044]针对现有技术中的缺陷，本发明人发现在实际的应用中，签核发起用户出现的安全问题较大，为此，本发明提出了一种签核发起用户管理方法和设备，应用于电子签核过程，用以提高电子签核过程的安全性。\n\n[0045]具体的，本发明提出了以下具体的实施例：\n\n[0046]实施例1\n\n[0047]本发明实施例1提出了一种签核发起用户管理方法，应用于电子签核过程，如图1所示，包括以下步骤：\n\n[0048]步骤101、当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；\n\n[0049]步骤102、若判断结果为是，则当接收到对应所述签核发起用户的签核请求时，降低所述签核发起用户的权限，以使得所述签核发起用户无法对所述签核请求进行签核。\n\n[0050]具体的，在此通过一个具体的例子来对签核过程进行说明，在一个具体的实施例中，例如可以为请假，某公司的员工A想向公司请假，为此需要发起一个关于请假的电子签核流程，在该电子签核的过程中，员工A即为签核发起用户。\n\n[0051]而除了关于请假的电子签核以外，电子签核还可以有很多其他的实施例，例如关于报销的电子签核，以及关于升迁命令的电子签核等等，而对应的，发起签核过程的用户即为签核发起用户，由于每个用户都可能发生签核的过程，也即成为签核发起用户，但与此同时也可能需要签核其他签核发起用户的签核请求，因此在自身所发起的签核过程中，该用户作为签核发起用户存在，而在别的用户所发起的签核过程中，则作为签核人存在在。\n\n[0052]签核发起用户首先需要登录，才能发起其他的操作流程，因此签核发起用户会发送登录请求，具体的登录请求可以包括有账户，密码等登录信息，在一个具体的实施例中，输入账户以及密码的环境即为登录环境。\n\n[0053]在签核发起用户进行登录的过程中，也即发送登录请求时，对签核发起用户所在的登录环境进行检测，具体的检测是否异常；具体的检测方式有以下几种：\n\n[0054]方式1、在一个具体的实施例中，所述登录环境具体包括登录IP；\n\n[0055]由此，如图2所示，步骤101中的检测，也即所述检测所述签核发起用户的登录环境是否异常，具体包括：\n\n[0056]步骤11、获取所述签核发起用户发送登录请求时的登录IP；\n\n[0057]步骤12、判断所述登录IP是否存在于预先存储的异常IP数据库中；\n\n[0058]步骤13、若判断结果为是，则确定所述签核发起用户的登录环境异常；\n\n[0059]步骤14、若判断结果为否，则确定所述签核发起用户的登录环境不异常。\n\n[0060]以上，在具体的实施例中，会预先获取到异常IP的数据，并基于该异常IP的数据生成异常IP数据库，具体的异常IP数据可以从关于安全的数据库中进行获取，以此异常IP会与例如诈骗等行为有直接或者间接的关系，以此会存在有风险。\n\n[0061]由此，通过判断签核发起用户发送登录请求时的登录IP是否为有风险的IP时通过判断登录IP是否存在于异常IP数据库中来进行的，若登录IP存在于异常IP数据库中,则说明登录IP是异常的IP，进而可以判断出登录环境异常，反之，则说明登录环境不异常，是正常的。\n\n[0062]方式2、在另一个具体的实施例中，所述登录环境具体包括登录IP；\n\n[0063]由此，如图3所示，所述检测所述签核发起用户的登录环境是否异常，具体包括：\n\n[0064]步骤21、获取所述签核发起用户发送登录请求时的登录IP；\n\n[0065]步骤22、判断所述登录IP是否存在于预先存储的已验证IP数据库中；\n\n[0066]步骤23、若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0067]步骤24、若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0068]在方式2中，具体的验证是基于IP来进行验证的，在签核发起用户发送登录请求时，获取到所在环境的IP(Internet Protocol,网络之间互连的协议)，而在事先，有基于分配的一批IP或者已验证过一批IP来形成了已验证IP数据库，由此进行判断所获取到的IP是否存在于已验证IP数据库中；若判断结果为是，则可以确定签核发起用户所在的登录环境为不异常，是安全的；反之，则可以确定签核发起用户所在的登录环境异常，是存在有风险的。\n\n[0069]方式3、所述登录环境具体包括登录终端；\n\n[0070]由此，如图4所示，所述检测所述签核发起用户的登录环境是否异常，具体包括：\n\n[0071]步骤31、获取所述签核发起用户发送登录请求的终端的终端信息；\n\n[0072]步骤32、判断所述终端信息是否存在于预先存储的已验证终端信息数据库中；\n\n[0073]步骤33、若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0074]步骤34、若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0075]方式3中的方式中，在事先会验证或者授权一批终端作为已验证终端，其对应的终端信息则形成已验证终端信息数据库，具体的终端信息可以包括有终端的标识，为终端设置的识别码等等。\n\n[0076]后续在进行验证时，提取到签核发起用户发送登录请求的终端的终端信息，并与已验证终端信息数据库中所存储的已验证终端信息进行匹配，若能匹配上，则说明签核发起用户所在的登录环境不异常，为正常环境；反之，则可以确定签核发起用户所在的登录环境异常，为存在有风险。\n\n[0077]在一个具体的应用场景中，除了分别对IP以及终端进行验证以外，还可以结合两者进行组合验证，例如可以结合方式1与方式3，还可以设置方式2与方式3的组合，在一个具体实施例中，可以设置只有当IP与终端都匹配上时，才验证通过；具体的验证过程可以基于实际的需要以及实际的环境进行设置，除了IP以及终端进行验证以外，还可以设置其他的验证方式，以及其他的组合验证方式。\n\n[0078]以上，若登录环境不异常，则执行步骤103、当接收到对应所述签核发起用户的签核请求时，指示所述签核发起用户对所述签核请求进行签核。\n\n[0079]允许签核发起用户在登录后执行其他的正常操作，而若是登录环境异常，则需要进行步骤102，也即当接收到对应所述签核发起用户的签核请求时，降低所述签核发起用户的权限，以使得所述签核发起用户无法对所述签核请求进行签核。\n\n[0080]在一个具体的实施例中，对签核请求进行签核对应设置有权限需求，对应不同签核请求的签核设置有不同的权限需要；由此，所述“当接收到对应所述签核发起用户的签核请求时，降低所述签核发起用户的权限，以使得所述签核发起用户无法对所述签核请求进行签核”，包括：\n\n[0081]当接收到对应所述签核发起用户的签核请求时，判断签核所述签核请求所需要的权限；\n\n[0082]将所述签核发起用户的权限进行降低，降低后的权限低于签核所述签核请求所需要的权限。\n\n[0083]在此一个具体例子来进行说明，例如判断接收到到需要签核发起用户签核的签核需求的权限为最高权限，而由于登录环境异常，会对签核发起用户的权限进行降低，例如降低为中等权限，在此情况下，由于权限不够，因此无法进行签核。\n\n[0084]以上是基于安全考虑，拒绝了签核发起用户的签核，但签核本身还是要进行的，因此该方法还包括：\n\n[0085]基于所述签核请求生成简略信息；\n\n[0086]将所述简略信息发送给所述签核发起用户。\n\n[0087]具体的，会生成简略信息，例如可以为“有您的一个关于xx的签核申请需要您处理”，以此来通知签核发起用户，便于该签核发起用户后续想办法进行签核。\n\n[0088]正是考虑到签核需要进行，因此该方法还包括：\n\n[0089]基于对签核发起用户的登录环境是否异常的检测，生成提示信息；其中，所述提示信息中包括有权限受限的原因；\n\n[0090]将所述提示信息发送给所述签核发起用户。\n\n[0091]具体的，提示信息可以为“由于登录环境异常，因此您的签核受限”，以此提醒签核发起用户后续可以更换登录环境，以顺利完成签核。\n\n[0092]本发明实施例1提出了一种签核发起用户管理方法，应用于电子签核过程，包括：当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；若判断结果为是，则当接收到对应所述签核发起用户的签核请求时，降低所述签核发起用户的权限，以使得所述签核发起用户无法对所述签核请求进行签核。以此，通过上述方法，提高了电子签核过程的安全性，保障了用户的使用体验。\n\n[0093]实施例2\n\n[0094]为了对本发明进行进一步的说明，本发明实施例2还公开了一种签核发起用户管理设备，应用于电子签核过程，如图5所示，包括：\n\n[0095]检测模块201，用于当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；\n\n[0096]处理模块202，用于当判断结果为是，且接收到对应所述签核发起用户的签核请求时，降低所述签核发起用户的权限，以使得所述签核发起用户无法对所述签核请求进行签核。\n\n[0097]具体的，在一个实施例中，签核发起用户管理设备还包括：\n\n[0098]通知模块，用于基于所述签核请求生成简略信息；\n\n[0099]将所述简略信息发送给所述签核发起用户。\n\n[0100]具体的，在一个实施例中，签核发起用户管理设备，还包括：\n\n[0101]提示模块，用于基于对签核发起用户的登录环境是否异常的检测，生成提示信息；其中，所述提示信息中包括有权限受限的原因；\n\n[0102]将所述提示信息发送给所述签核发起用户。\n\n[0103]具体的，在一个实施例中，对签核请求进行签核对应设置有权限需求，对应不同签核请求的签核设置有不同的权限需要；\n\n[0104]所述处理模块202，用于：\n\n[0105]当接收到对应所述签核发起用户的签核请求时，判断签核所述签核请求所需要的权限；\n\n[0106]将所述签核发起用户的权限进行降低，降低后的权限低于签核所述签核请求所需要的权限。\n\n[0107]具体的，在一个实施例中，签核发起用户管理设备，还包括：\n\n[0108]指示模块，用于当判断结果为否，且接收到对应所述签核发起用户的签核请求时，指示所述签核发起用户对所述签核请求进行签核。\n\n[0109]与现有技术相比，本发明实施例提出了一种签核发起用户管理方法和设备，应用于电子签核过程，其中，该签核发起用户管理方法包括：当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；若判断结果为是，则当接收到对应所述签核发起用户的签核请求时，降低所述签核发起用户的权限，以使得所述签核发起用户无法对所述签核请求进行签核。以此，通过上述方法，提高了电子签核过程的安全性，保障了用户的使用体验。\n\n[0110]本领域技术人员可以理解附图只是一个优选实施场景的示意图，附图中的模块或流程并不一定是实施本发明所必须的。\n\n[0111]本领域技术人员可以理解实施场景中的装置中的模块可以按照实施场景描述进行分布于实施场景的装置中，也可以进行相应变化位于不同于本实施场景的一个或多个装置中。上述实施场景的模块可以合并为一个模块，也可以进一步拆分成多个子模块。\n\n[0112]上述本发明序号仅仅为了描述，不代表实施场景的优劣。\n\n[0113]以上公开的仅为本发明的几个具体实施场景，但是，本发明并非局限于此，任何本领域的技术人员能思之的变化都应落入本发明的保护范围。\n\n', '技术领域\n\n[0001]本发明涉及网络技术领域，特别涉及一种签核发起用户管理方法和设备。\n\n背景技术\n\n[0002]在现有技术中，文件的签核一般是人工来进行的，在具体的过程中，需要将相应的文件打印出来，并以人工的方式传递给各个需要签核的签核人处，操作流程繁琐，费时费力，效率低下；且当某位签核人不在的时候，就会耽搁整个流程的正常进行。\n\n[0003]为此，目前有提到有一种电子签核的方式，但这种方式安全性不高，影响用户的体验。\n\n发明内容\n\n[0004]针对现有技术中的缺陷，本发明提出了一种签核发起用户管理方法和设备，用以克服现有技术中的缺陷，提高电子签核的安全性，保障用户的体验。\n\n[0005]具体的，本发明提出了以下具体的实施例：\n\n[0006]本发明实施例提出了一种签核发起用户管理方法，应用于电子签核过程，包括：\n\n[0007]当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；\n\n[0008]若判断结果为是，则当接收到对应所述签核发起用户的签核请求时，降低所述签核发起用户的权限，以使得所述签核发起用户无法对所述签核请求进行签核。\n\n[0009]进一步的，在一个具体的实施例中，该方法还包括：\n\n[0010]基于所述签核请求生成简略信息；\n\n[0011]将所述简略信息发送给所述签核发起用户。\n\n[0012]进一步的，在一个具体的实施例中，该方法还包括：\n\n[0013]基于对签核发起用户的登录环境是否异常的检测，生成提示信息；其中，所述提示信息中包括有权限受限的原因；\n\n[0014]将所述提示信息发送给所述签核发起用户。\n\n[0015]进一步的，在一个具体的实施例中，对签核请求进行签核对应设置有权限需求，对应不同签核请求的签核设置有不同的权限需要；\n\n[0016]所述“当接收到对应所述签核发起用户的签核请求时，降低所述签核发起用户的权限，以使得所述签核发起用户无法对所述签核请求进行签核”，包括：\n\n[0017]当接收到对应所述签核发起用户的签核请求时，判断签核所述签核请求所需要的权限；\n\n[0018]将所述签核发起用户的权限进行降低，降低后的权限低于签核所述签核请求所需要的权限。\n\n[0019]进一步的，在一个具体的实施例中，该方法还包括：\n\n[0020]若判断结果为否，则当接收到对应所述签核发起用户的签核请求时，指示所述签核发起用户对所述签核请求进行签核。\n\n[0021]本发明实施例还提出了一种签核发起用户管理设备，应用于电子签核过程，包括：\n\n[0022]检测模块，用于当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；\n\n[0023]处理模块，用于当判断结果为是，且接收到对应所述签核发起用户的签核请求时，降低所述签核发起用户的权限，以使得所述签核发起用户无法对所述签核请求进行签核。\n\n[0024]进一步的，在一个具体的实施例中，该设备还包括：\n\n[0025]通知模块，用于基于所述签核请求生成简略信息；\n\n[0026]将所述简略信息发送给所述签核发起用户。\n\n[0027]进一步的，在一个具体的实施例中，该设备还包括：\n\n[0028]提示模块，用于基于对签核发起用户的登录环境是否异常的检测，生成提示信息；其中，所述提示信息中包括有权限受限的原因；\n\n[0029]将所述提示信息发送给所述签核发起用户。\n\n[0030]进一步的，在一个具体的实施例中，对签核请求进行签核对应设置有权限需求，对应不同签核请求的签核设置有不同的权限需要；\n\n[0031]所述处理模块，用于：\n\n[0032]当接收到对应所述签核发起用户的签核请求时，判断签核所述签核请求所需要的权限；\n\n[0033]将所述签核发起用户的权限进行降低，降低后的权限低于签核所述签核请求所需要的权限。\n\n[0034]进一步的，在一个具体的实施例中，该设备还包括：\n\n[0035]指示模块，用于当判断结果为否，且接收到对应所述签核发起用户的签核请求时，指示所述签核发起用户对所述签核请求进行签核。\n\n[0036]与现有技术相比，本发明实施例提出了一种签核发起用户管理方法和设备，应用于电子签核过程，其中，该签核发起用户管理方法包括：当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；若判断结果为是，则当接收到对应所述签核发起用户的签核请求时，降低所述签核发起用户的权限，以使得所述签核发起用户无法对所述签核请求进行签核。。以此，通过上述方法，提高了电子签核过程的安全性，保障了用户的使用体验。\n\n附图说明\n\n[0037]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0038]图1为本发明实施例提出的一种签核发起用户管理方法流程示意图；\n\n[0039]图2为本发明实施例提出的一种检测签核发起用户的登录环境是否异常的方法流程示意图；\n\n[0040]图3为本发明实施例提出的一种检测签核发起用户的登录环境是否异常的方法流程示意图；\n\n[0041]图4为本发明实施例提出的一种检测签核发起用户的登录环境是否异常的方法的流程示意图；\n\n[0042]图5为本发明实施例提出的一种签核发起用户管理设备的结构示意图。\n\n具体实施方式\n\n[0043]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。通常在此处附图中描述和出示的本发明实施例的组件可以以各种不同的配置来布置和设计。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0044]针对现有技术中的缺陷，本发明人发现在实际的应用中，签核发起用户出现的安全问题较大，为此，本发明提出了一种签核发起用户管理方法和设备，应用于电子签核过程，用以提高电子签核过程的安全性。\n\n[0045]具体的，本发明提出了以下具体的实施例：\n\n[0046]实施例1\n\n[0047]本发明实施例1提出了一种签核发起用户管理方法，应用于电子签核过程，如图1所示，包括以下步骤：\n\n[0048]步骤101、当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；\n\n[0049]步骤102、若判断结果为是，则当接收到对应所述签核发起用户的签核请求时，降低所述签核发起用户的权限，以使得所述签核发起用户无法对所述签核请求进行签核。\n\n[0050]具体的，在此通过一个具体的例子来对签核过程进行说明，在一个具体的实施例中，例如可以为请假，某公司的员工A想向公司请假，为此需要发起一个关于请假的电子签核流程，在该电子签核的过程中，员工A即为签核发起用户。\n\n[0051]而除了关于请假的电子签核以外，电子签核还可以有很多其他的实施例，例如关于报销的电子签核，以及关于升迁命令的电子签核等等，而对应的，发起签核过程的用户即为签核发起用户，由于每个用户都可能发生签核的过程，也即成为签核发起用户，但与此同时也可能需要签核其他签核发起用户的签核请求，因此在自身所发起的签核过程中，该用户作为签核发起用户存在，而在别的用户所发起的签核过程中，则作为签核人存在在。\n\n[0052]签核发起用户首先需要登录，才能发起其他的操作流程，因此签核发起用户会发送登录请求，具体的登录请求可以包括有账户，密码等登录信息，在一个具体的实施例中，输入账户以及密码的环境即为登录环境。\n\n[0053]在签核发起用户进行登录的过程中，也即发送登录请求时，对签核发起用户所在的登录环境进行检测，具体的检测是否异常；具体的检测方式有以下几种：\n\n[0054]方式1、在一个具体的实施例中，所述登录环境具体包括登录IP；\n\n[0055]由此，如图2所示，步骤101中的检测，也即所述检测所述签核发起用户的登录环境是否异常，具体包括：\n\n[0056]步骤11、获取所述签核发起用户发送登录请求时的登录IP；\n\n[0057]步骤12、判断所述登录IP是否存在于预先存储的异常IP数据库中；\n\n[0058]步骤13、若判断结果为是，则确定所述签核发起用户的登录环境异常；\n\n[0059]步骤14、若判断结果为否，则确定所述签核发起用户的登录环境不异常。\n\n[0060]以上，在具体的实施例中，会预先获取到异常IP的数据，并基于该异常IP的数据生成异常IP数据库，具体的异常IP数据可以从关于安全的数据库中进行获取，以此异常IP会与例如诈骗等行为有直接或者间接的关系，以此会存在有风险。\n\n[0061]由此，通过判断签核发起用户发送登录请求时的登录IP是否为有风险的IP时通过判断登录IP是否存在于异常IP数据库中来进行的，若登录IP存在于异常IP数据库中,则说明登录IP是异常的IP，进而可以判断出登录环境异常，反之，则说明登录环境不异常，是正常的。\n\n[0062]方式2、在另一个具体的实施例中，所述登录环境具体包括登录IP；\n\n[0063]由此，如图3所示，所述检测所述签核发起用户的登录环境是否异常，具体包括：\n\n[0064]步骤21、获取所述签核发起用户发送登录请求时的登录IP；\n\n[0065]步骤22、判断所述登录IP是否存在于预先存储的已验证IP数据库中；\n\n[0066]步骤23、若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0067]步骤24、若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0068]在方式2中，具体的验证是基于IP来进行验证的，在签核发起用户发送登录请求时，获取到所在环境的IP(Internet Protocol,网络之间互连的协议)，而在事先，有基于分配的一批IP或者已验证过一批IP来形成了已验证IP数据库，由此进行判断所获取到的IP是否存在于已验证IP数据库中；若判断结果为是，则可以确定签核发起用户所在的登录环境为不异常，是安全的；反之，则可以确定签核发起用户所在的登录环境异常，是存在有风险的。\n\n[0069]方式3、所述登录环境具体包括登录终端；\n\n[0070]由此，如图4所示，所述检测所述签核发起用户的登录环境是否异常，具体包括：\n\n[0071]步骤31、获取所述签核发起用户发送登录请求的终端的终端信息；\n\n[0072]步骤32、判断所述终端信息是否存在于预先存储的已验证终端信息数据库中；\n\n[0073]步骤33、若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0074]步骤34、若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0075]方式3中的方式中，在事先会验证或者授权一批终端作为已验证终端，其对应的终端信息则形成已验证终端信息数据库，具体的终端信息可以包括有终端的标识，为终端设置的识别码等等。\n\n[0076]后续在进行验证时，提取到签核发起用户发送登录请求的终端的终端信息，并与已验证终端信息数据库中所存储的已验证终端信息进行匹配，若能匹配上，则说明签核发起用户所在的登录环境不异常，为正常环境；反之，则可以确定签核发起用户所在的登录环境异常，为存在有风险。\n\n[0077]在一个具体的应用场景中，除了分别对IP以及终端进行验证以外，还可以结合两者进行组合验证，例如可以结合方式1与方式3，还可以设置方式2与方式3的组合，在一个具体实施例中，可以设置只有当IP与终端都匹配上时，才验证通过；具体的验证过程可以基于实际的需要以及实际的环境进行设置，除了IP以及终端进行验证以外，还可以设置其他的验证方式，以及其他的组合验证方式。\n\n[0078]以上，若登录环境不异常，则执行步骤103、当接收到对应所述签核发起用户的签核请求时，指示所述签核发起用户对所述签核请求进行签核。\n\n[0079]允许签核发起用户在登录后执行其他的正常操作，而若是登录环境异常，则需要进行步骤102，也即当接收到对应所述签核发起用户的签核请求时，降低所述签核发起用户的权限，以使得所述签核发起用户无法对所述签核请求进行签核。\n\n[0080]在一个具体的实施例中，对签核请求进行签核对应设置有权限需求，对应不同签核请求的签核设置有不同的权限需要；由此，所述“当接收到对应所述签核发起用户的签核请求时，降低所述签核发起用户的权限，以使得所述签核发起用户无法对所述签核请求进行签核”，包括：\n\n[0081]当接收到对应所述签核发起用户的签核请求时，判断签核所述签核请求所需要的权限；\n\n[0082]将所述签核发起用户的权限进行降低，降低后的权限低于签核所述签核请求所需要的权限。\n\n[0083]在此一个具体例子来进行说明，例如判断接收到到需要签核发起用户签核的签核需求的权限为最高权限，而由于登录环境异常，会对签核发起用户的权限进行降低，例如降低为中等权限，在此情况下，由于权限不够，因此无法进行签核。\n\n[0084]以上是基于安全考虑，拒绝了签核发起用户的签核，但签核本身还是要进行的，因此该方法还包括：\n\n[0085]基于所述签核请求生成简略信息；\n\n[0086]将所述简略信息发送给所述签核发起用户。\n\n[0087]具体的，会生成简略信息，例如可以为“有您的一个关于xx的签核申请需要您处理”，以此来通知签核发起用户，便于该签核发起用户后续想办法进行签核。\n\n[0088]正是考虑到签核需要进行，因此该方法还包括：\n\n[0089]基于对签核发起用户的登录环境是否异常的检测，生成提示信息；其中，所述提示信息中包括有权限受限的原因；\n\n[0090]将所述提示信息发送给所述签核发起用户。\n\n[0091]具体的，提示信息可以为“由于登录环境异常，因此您的签核受限”，以此提醒签核发起用户后续可以更换登录环境，以顺利完成签核。\n\n[0092]本发明实施例1提出了一种签核发起用户管理方法，应用于电子签核过程，包括：当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；若判断结果为是，则当接收到对应所述签核发起用户的签核请求时，降低所述签核发起用户的权限，以使得所述签核发起用户无法对所述签核请求进行签核。以此，通过上述方法，提高了电子签核过程的安全性，保障了用户的使用体验。\n\n[0093]实施例2\n\n[0094]为了对本发明进行进一步的说明，本发明实施例2还公开了一种签核发起用户管理设备，应用于电子签核过程，如图5所示，包括：\n\n[0095]检测模块201，用于当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；\n\n[0096]处理模块202，用于当判断结果为是，且接收到对应所述签核发起用户的签核请求时，降低所述签核发起用户的权限，以使得所述签核发起用户无法对所述签核请求进行签核。\n\n[0097]具体的，在一个实施例中，签核发起用户管理设备还包括：\n\n[0098]通知模块，用于基于所述签核请求生成简略信息；\n\n[0099]将所述简略信息发送给所述签核发起用户。\n\n[0100]具体的，在一个实施例中，签核发起用户管理设备，还包括：\n\n[0101]提示模块，用于基于对签核发起用户的登录环境是否异常的检测，生成提示信息；其中，所述提示信息中包括有权限受限的原因；\n\n[0102]将所述提示信息发送给所述签核发起用户。\n\n[0103]具体的，在一个实施例中，对签核请求进行签核对应设置有权限需求，对应不同签核请求的签核设置有不同的权限需要；\n\n[0104]所述处理模块202，用于：\n\n[0105]当接收到对应所述签核发起用户的签核请求时，判断签核所述签核请求所需要的权限；\n\n[0106]将所述签核发起用户的权限进行降低，降低后的权限低于签核所述签核请求所需要的权限。\n\n[0107]具体的，在一个实施例中，签核发起用户管理设备，还包括：\n\n[0108]指示模块，用于当判断结果为否，且接收到对应所述签核发起用户的签核请求时，指示所述签核发起用户对所述签核请求进行签核。\n\n[0109]与现有技术相比，本发明实施例提出了一种签核发起用户管理方法和设备，应用于电子签核过程，其中，该签核发起用户管理方法包括：当接收到签核发起用户的登录请求时，检测所述签核发起用户的登录环境是否异常；若判断结果为是，则当接收到对应所述签核发起用户的签核请求时，降低所述签核发起用户的权限，以使得所述签核发起用户无法对所述签核请求进行签核。以此，通过上述方法，提高了电子签核过程的安全性，保障了用户的使用体验。\n\n[0110]本领域技术人员可以理解附图只是一个优选实施场景的示意图，附图中的模块或流程并不一定是实施本发明所必须的。\n\n[0111]本领域技术人员可以理解实施场景中的装置中的模块可以按照实施场景描述进行分布于实施场景的装置中，也可以进行相应变化位于不同于本实施场景的一个或多个装置中。上述实施场景的模块可以合并为一个模块，也可以进一步拆分成多个子模块。\n\n[0112]上述本发明序号仅仅为了描述，不代表实施场景的优劣。\n\n[0113]以上公开的仅为本发明的几个具体实施场景，但是，本发明并非局限于此，任何本领域的技术人员能思之的变化都应落入本发明的保护范围。\n\n');
INSERT INTO `os_patent_instruction_text` VALUES (11155, 24093, '技术领域\n\n[0001]本发明涉及网络技术领域，特别涉及一种签核发起用户管理方法和设备。\n\n背景技术\n\n[0002]在现有技术中，文件的签核一般是人工来进行的，在具体的过程中，需要将相应的文件打印出来，并以人工的方式传递给各个需要签核的签核人处，操作流程繁琐，费时费力，效率低下；且当某位签核人不在的时候，就会耽搁整个流程的正常进行。\n\n[0003]为此，目前有提到有一种电子签核的方式，但这种方式安全性不高。\n\n发明内容\n\n[0004]针对现有技术中的缺陷，本发明提出了一种签核发起用户管理方法和设备，用以克服现有技术中的缺陷，提高电子签核的安全性。\n\n[0005]具体的，本发明提出了以下具体的实施例：\n\n[0006]本发明实施例提出了一种签核发起用户管理方法，应用于电子签核过程，包括：\n\n[0007]当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常；\n\n[0008]若判断结果为是，对所述签核发起用户进行实时信息验证；\n\n[0009]基于实时信息验证的结果确定授予所述签核发起用户的权限。\n\n[0010]进一步的，在一个具体的实施例中，所述登录环境具体包括登录IP；\n\n[0011]所述判断所述签核发起用户的登录环境是否异常，包括：\n\n[0012]获取所述签核发起用户发送登录请求时的登录IP；\n\n[0013]判断所述登录IP是否存在于预先存储的已验证IP数据库中；\n\n[0014]若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0015]若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0016]进一步的，在一个具体的实施例中，所述登录环境具体包括登录终端；\n\n[0017]所述判断所述签核发起用户的登录环境是否异常，包括：\n\n[0018]获取所述签核发起用户发送登录请求的终端的终端信息；\n\n[0019]判断所述终端信息是否存在于预先存储的已验证终端信息数据库中；\n\n[0020]若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0021]若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0022]进一步的，在一个具体的实施例中，所述实时信息包括：实时视频信息、实时音频信息、实时指纹信息中一个或多个的任意组合；\n\n[0023]所述对所述签核发起用户进行实时信息验证，包括：\n\n[0024]提示所述签核发起用户提供实时信息；\n\n[0025]在获取到所述签核发起用户提供的实时信息之后，对所述签核发起用户的实时信息进行关于是否是所述签核发起用户本人的验证；\n\n[0026]获取实时信息验证的结果；其中所述实时信息验证的结果中包括通过验证的实时信息的数量。\n\n[0027]进一步的，在一个具体的实施例中，所述基于实时信息验证的结果确定授予所述签核发起用户的权限，包括：\n\n[0028]确定通过验证的实时信息的数量以及所有进行了验证的实时信息的数量；\n\n[0029]基于通过验证的实时信息的数量占所有进行了验证的实时信息的数量的比值确定授予所述签核发起用户的权限；其中比值越大，授予所述签核发起用户的权限越大。\n\n[0030]本发明实施例还提出了一种签核发起用户管理设备，应用于电子签核过程，包括：\n\n[0031]判断模块，用于当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常；\n\n[0032]验证模块，用于当判断结果为是时，对所述签核发起用户进行实时信息验证；\n\n[0033]处理模块，用于基于实时信息验证的结果确定授予所述签核发起用户的权限。\n\n[0034]进一步的，在一个具体的实施例中，所述登录环境具体包括登录IP；\n\n[0035]所述判断模块，用于：\n\n[0036]获取所述签核发起用户发送登录请求时的登录IP；\n\n[0037]判断所述登录IP是否存在于预先存储的已验证IP数据库中；\n\n[0038]若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0039]若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0040]进一步的，在一个具体的实施例中，所述登录环境具体包括登录终端；\n\n[0041]所述判断模块，用于：\n\n[0042]获取所述签核发起用户发送登录请求的终端的终端信息；\n\n[0043]判断所述终端信息是否存在于预先存储的已验证终端信息数据库中；\n\n[0044]若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0045]若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0046]进一步的，在一个具体的实施例中，所述实时信息包括：实时视频信息、实时音频信息、实时指纹信息中一个或多个的任意组合；\n\n[0047]所述验证模块，用于：\n\n[0048]提示所述签核发起用户提供实时信息；\n\n[0049]在获取到所述签核发起用户提供的实时信息之后，对所述签核发起用户的实时信息进行关于是否是所述签核发起用户本人的验证；\n\n[0050]获取实时信息验证的结果；其中所述实时信息验证的结果中包括通过验证的实时信息的数量。\n\n[0051]进一步的，在一个具体的实施例中，所述处理模块，用于：\n\n[0052]确定通过验证的实时信息的数量以及所有进行了验证的实时信息的数量；\n\n[0053]基于通过验证的实时信息的数量占所有进行了验证的实时信息的数量的比值确定授予所述签核发起用户的权限；其中比值越大，授予所述签核发起用户的权限越大。\n\n[0054]与现有技术相比，本发明实施例提出了一种签核发起用户管理方法和设备，应用于电子签核过程，其中，该签核发起用户管理方法包括：当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常；若判断结果为是，对所述签核发起用户进行实时信息验证；基于实时信息验证的结果确定授予所述签核发起用户的权限。以此，通过上述方法，通过对签核发起用户进行验证，提高了电子签核过程的安全性。\n\n附图说明\n\n[0055]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0056]图1为本发明实施例提出的一种签核发起用户管理方法流程示意图；\n\n[0057]图2为本发明实施例提出的一种判断登录环境是否异常的方法流程示意图；\n\n[0058]图3为本发明实施例提出的一种判断登录环境是否异常的方法流程示意图；\n\n[0059]图4为本发明实施例提出的一种签核发起用户管理设备的结构示意图。\n\n具体实施方式\n\n[0060]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。通常在此处附图中描述和出示的本发明实施例的组件可以以各种不同的配置来布置和设计。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0061]针对现有技术中的缺陷，本发明人发现在实际的应用中，签核发起用户出现的安全问题较大，为此，本发明提出了一种签核发起用户管理方法和设备，应用于电子签核过程，用以提高电子签核过程的安全性。\n\n[0062]具体的，本发明提出了以下具体的实施例：\n\n[0063]实施例1\n\n[0064]本发明实施例1提出了一种签核发起用户管理方法，应用于电子签核过程，如图1所示，包括以下步骤：\n\n[0065]步骤101、当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常。\n\n[0066]在此通过一个具体的例子来对签核过程进行说明，在一个具体的实施例中，例如签核请求可以为关于请假的签核请求，某公司的员工1想向公司请假，为此需要发起一个关于请假的签核请求，在该发起签核的过程中，员工1即为签核发起用户。\n\n[0067]而除了关于请假的签核请求以外，签核请求还可以有很多其他的实施例，例如关于报销的签核请求，以及关于升迁命令的签核请求等等，而对应的，发起签核过程的用户(也即发送签核请求的用户)即为签核发起用户。\n\n[0068]签核发起用户首先需要登录，才能发起签核过程，因此签核发起用户会发送登录请求，具体的登录请求可以包括有账户，密码等登录信息，在一个具体的实施例中，输入账户以及密码的环境即为登录环境。\n\n[0069]而考虑到登录环境的安全性直接影响到电子签核的安全性，由此，会对登录环境进行判断，具体的判断登录环境是否异常。\n\n[0070]以下对判断登录环境是否异常进行说明，具体的，对应的判断方式可以有多种，在此以下面两种为例来进行说明：\n\n[0071]方式1中，所述登录环境具体包括登录IP；\n\n[0072]由此，步骤101，也即所述判断所述签核发起用户的登录环境是否异常，具体的，如图2所示，可以包括以下步骤：\n\n[0073]步骤11、获取所述签核发起用户发送登录请求时的登录IP；\n\n[0074]步骤12、判断所述登录IP是否存在于预先存储的已验证IP数据库中；\n\n[0075]步骤13、若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0076]步骤14、若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0077]在方式1中，具体的验证是基于IP来进行验证的，在签核发起用户发送登录请求时，获取到所在环境的IP(Internet Protocol,网络之间互连的协议)，而在事先，有基于分配的一批IP或者已验证过一批IP来形成了已验证IP数据库，由此进行判断所获取到的IP是否存在于已验证IP数据库中；若判断结果为是，则可以确定签核发起用户所在的登录环境为已验证登录环境，也即登录环境不异常，是正常的；反之，则可以确定签核发起用户所在的登录环境不是已验证登录环境，也即是异常的。\n\n[0078]方式2中，所述登录环境具体包括登录终端；\n\n[0079]由此，步骤101，也即所述判断所述签核发起用户的登录环境是否异常，如图3所示，具体包括：\n\n[0080]步骤21、获取所述签核发起用户发送登录请求的终端的终端信息；\n\n[0081]步骤22、判断所述终端信息是否存在于预先存储的已验证终端信息数据库中；\n\n[0082]步骤23、若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0083]步骤24、若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0084]在方式2中，会事先会验证或者授权一批终端作为已验证终端，其对应的终端信息则形成已验证终端信息数据库，具体的终端信息可以包括有终端的标识，为终端设置的识别码等等。\n\n[0085]后续在进行验证时，提取到签核发起用户发送登录请求的终端的终端信息，并与已验证终端信息数据库中所存储的已验证终端信息进行匹配，若能匹配上，则说明签核发起用户所在的登录环境为已验证登录环境，也即登录环境不异常；反之，则可以确定签核发起用户所在的登录环境不是已验证登录环境，即登录环境异常。\n\n[0086]在一个具体的应用场景中，除了分别对IP以及终端进行验证以外，还可以结合两者进行组合验证，只有当IP与终端都匹配上时，才验证通过；具体的验证过程可以基于实际的需要以及实际的环境进行设置，除了IP以及终端进行验证以外，还可以设置其他的验证方式，以及其他的组合验证方式。\n\n[0087]以上，若判断结果为否，也即登录环境不异常，是正常环境，在此情况下可以授予签核发起用户全权，使得签核发起用户正常登录，并能正常发起电子签核的流程。而若是判断结果为是，也即登录环境异常，在此情况下，则需要进行进一步的操作，也即执行步骤102。\n\n[0088]步骤102、若判断结果为是，对所述签核发起用户进行实时信息验证。\n\n[0089]在一个具体的实施例中，所述实时信息可以包括：实时视频信息、实时音频信息、实时指纹信息中一个或多个的任意组合；\n\n[0090]所述对所述签核发起用户进行实时信息验证，具体包括：\n\n[0091]提示所述签核发起用户提供实时信息；\n\n[0092]在获取到所述签核发起用户提供的实时信息之后，对所述签核发起用户的实时信息进行关于是否是所述签核发起用户本人的验证；\n\n[0093]获取实时信息验证的结果；其中所述实时信息验证的结果中包括通过验证的实时信息的数量。\n\n[0094]具体的，关于实时视频信息的验证，可以提示签核发起用户上传实时的本人的视频信息，在获取到该视频信息之后，对视频信息进行人像识别，以确认是否是签核发起者本人，若判断结果为是，则可以确定实时视频信息的验证通过。\n\n[0095]关于语音验证，在一个具体的实施例中，需要在验证时签核发起用户即时读入一定文字的语音，例如该一定文字可以为：“我是xx”，在获取到语音后与预先存储的语音进行匹配，若能匹配上，则验证通过；若无法匹配上，则验证不通过。\n\n[0096]关于实时指纹信息的验证，与上述类似，通过实时获取到的指纹信息与预先存储的指纹信息进行匹配，若能匹配上，则验证通过；若无法匹配上，则验证不通过。\n\n[0097]通过以上的验证过程，可以确定验证通过的实时信息的数量，例如实时指纹信息与实时语音验证验证通过，但实时视频信息的验证没有通过，则通过的数量为2；而所示上述的验证全都通过，则通过的数量为3。以上是基于一个具体的实施例来进行的说明，具体的实时验证方式还可以有其他的方式，具体可基于需要进行设置。\n\n[0098]步骤103、基于实时信息验证的结果确定授予所述签核发起用户的权限。\n\n[0099]在一个具体的实施例中，步骤103、也即所述基于实时信息验证的结果确定授予所述签核发起用户的权限，具体包括：\n\n[0100]确定通过验证的实时信息的数量以及所有进行了验证的实时信息的数量；\n\n[0101]基于通过验证的实时信息的数量占所有进行了验证的实时信息的数量的比值确定授予所述签核发起用户的权限；其中比值越大，授予所述签核发起用户的权限越大。\n\n[0102]仍以对步骤102进行说明的例子来进行说明，若参与验证的实时信息地数量为3，而通过验证的实时信息有3个，也即全部通过验证，由此对应的比值为100％，在此情况下，授予签核发起用户全权，签核发起用户可以顺利登录，并正常发起签核过程。而若是通过验证的实时信息只有1个，对应的比值比较低，相应的，授予签核发起用户的权限就会受到影响，在一个具体的实施例中，例如权限分为最高权限，中等权限，最低权限，若比值比较低，被授予的权限可能会是最低权限。而不同的签核本身是有不同的权限要求，是否能发起签核的过程也是有权限要求的，因此若被授予的权限过低，将可能使得签核发起用户无法发起签核，或者无法发起权限需要无法被满足的签核。\n\n[0103]本发明实施例1提出了一种签核发起用户管理方法，应用于电子签核过程，包括：当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常；若判断结果为是，对所述签核发起用户进行实时信息验证；基于实时信息验证的结果确定授予所述签核发起用户的权限。以此，通过上述方法，通过对签核发起用户进行验证，提高了电子签核过程的安全性。\n\n[0104]实施例2\n\n[0105]为了对本发明进行进一步的说明，本发明实施例2还公开了一种签核发起用户管理设备，可以应用于电子签核过程，如图4所示，包括：\n\n[0106]判断模块201，用于当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常；\n\n[0107]验证模块202，用于当判断结果为是时，对所述签核发起用户进行实时信息验证；\n\n[0108]处理模块203，用于基于实时信息验证的结果确定授予所述签核发起用户的权限。\n\n[0109]具体的，在一个具体的实施例中，所述登录环境具体包括登录IP；\n\n[0110]所述判断模块201，具体用于：\n\n[0111]获取所述签核发起用户发送登录请求时的登录IP；\n\n[0112]判断所述登录IP是否存在于预先存储的已验证IP数据库中；\n\n[0113]若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0114]若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0115]具体的，在一个具体的实施例中，所述登录环境具体包括登录终端；\n\n[0116]所述判断模块201，具体用于：\n\n[0117]获取所述签核发起用户发送登录请求的终端的终端信息；\n\n[0118]判断所述终端信息是否存在于预先存储的已验证终端信息数据库中；\n\n[0119]若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0120]若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0121]具体的，在一个具体的实施例中，所述实时信息包括：实时视频信息、实时音频信息、实时指纹信息中一个或多个的任意组合；\n\n[0122]所述验证模块202，具体用于：\n\n[0123]提示所述签核发起用户提供实时信息；\n\n[0124]在获取到所述签核发起用户提供的实时信息之后，对所述签核发起用户的实时信息进行关于是否是所述签核发起用户本人的验证；\n\n[0125]获取实时信息验证的结果；其中所述实时信息验证的结果中包括通过验证的实时信息的数量。\n\n[0126]具体的，在一个具体的实施例中，所述处理模块203，具体用于：\n\n[0127]确定通过验证的实时信息的数量以及所有进行了验证的实时信息的数量；\n\n[0128]基于通过验证的实时信息的数量占所有进行了验证的实时信息的数量的比值确定授予所述签核发起用户的权限；其中比值越大，授予所述签核发起用户的权限越大。\n\n[0129]与现有技术相比，本发明实施例提出了一种签核发起用户管理方法和设备，应用于电子签核过程，其中，该签核发起用户管理方法包括：当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常；若判断结果为是，对所述签核发起用户进行实时信息验证；基于实时信息验证的结果确定授予所述签核发起用户的权限。以此，通过上述方法，通过对签核发起用户进行验证，提高了电子签核过程的安全性。\n\n[0130]本领域技术人员可以理解附图只是一个优选实施场景的示意图，附图中的模块或流程并不一定是实施本发明所必须的。\n\n[0131]本领域技术人员可以理解实施场景中的装置中的模块可以按照实施场景描述进行分布于实施场景的装置中，也可以进行相应变化位于不同于本实施场景的一个或多个装置中。上述实施场景的模块可以合并为一个模块，也可以进一步拆分成多个子模块。\n\n[0132]上述本发明序号仅仅为了描述，不代表实施场景的优劣。\n\n[0133]以上公开的仅为本发明的几个具体实施场景，但是，本发明并非局限于此，任何本领域的技术人员能思之的变化都应落入本发明的保护范围。\n\n', '技术领域\n\n[0001]本发明涉及网络技术领域，特别涉及一种签核发起用户管理方法和设备。\n\n背景技术\n\n[0002]在现有技术中，文件的签核一般是人工来进行的，在具体的过程中，需要将相应的文件打印出来，并以人工的方式传递给各个需要签核的签核人处，操作流程繁琐，费时费力，效率低下；且当某位签核人不在的时候，就会耽搁整个流程的正常进行。\n\n[0003]为此，目前有提到有一种电子签核的方式，但这种方式安全性不高。\n\n发明内容\n\n[0004]针对现有技术中的缺陷，本发明提出了一种签核发起用户管理方法和设备，用以克服现有技术中的缺陷，提高电子签核的安全性。\n\n[0005]具体的，本发明提出了以下具体的实施例：\n\n[0006]本发明实施例提出了一种签核发起用户管理方法，应用于电子签核过程，包括：\n\n[0007]当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常；\n\n[0008]若判断结果为是，对所述签核发起用户进行实时信息验证；\n\n[0009]基于实时信息验证的结果确定授予所述签核发起用户的权限。\n\n[0010]进一步的，在一个具体的实施例中，所述登录环境具体包括登录IP；\n\n[0011]所述判断所述签核发起用户的登录环境是否异常，包括：\n\n[0012]获取所述签核发起用户发送登录请求时的登录IP；\n\n[0013]判断所述登录IP是否存在于预先存储的已验证IP数据库中；\n\n[0014]若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0015]若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0016]进一步的，在一个具体的实施例中，所述登录环境具体包括登录终端；\n\n[0017]所述判断所述签核发起用户的登录环境是否异常，包括：\n\n[0018]获取所述签核发起用户发送登录请求的终端的终端信息；\n\n[0019]判断所述终端信息是否存在于预先存储的已验证终端信息数据库中；\n\n[0020]若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0021]若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0022]进一步的，在一个具体的实施例中，所述实时信息包括：实时视频信息、实时音频信息、实时指纹信息中一个或多个的任意组合；\n\n[0023]所述对所述签核发起用户进行实时信息验证，包括：\n\n[0024]提示所述签核发起用户提供实时信息；\n\n[0025]在获取到所述签核发起用户提供的实时信息之后，对所述签核发起用户的实时信息进行关于是否是所述签核发起用户本人的验证；\n\n[0026]获取实时信息验证的结果；其中所述实时信息验证的结果中包括通过验证的实时信息的数量。\n\n[0027]进一步的，在一个具体的实施例中，所述基于实时信息验证的结果确定授予所述签核发起用户的权限，包括：\n\n[0028]确定通过验证的实时信息的数量以及所有进行了验证的实时信息的数量；\n\n[0029]基于通过验证的实时信息的数量占所有进行了验证的实时信息的数量的比值确定授予所述签核发起用户的权限；其中比值越大，授予所述签核发起用户的权限越大。\n\n[0030]本发明实施例还提出了一种签核发起用户管理设备，应用于电子签核过程，包括：\n\n[0031]判断模块，用于当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常；\n\n[0032]验证模块，用于当判断结果为是时，对所述签核发起用户进行实时信息验证；\n\n[0033]处理模块，用于基于实时信息验证的结果确定授予所述签核发起用户的权限。\n\n[0034]进一步的，在一个具体的实施例中，所述登录环境具体包括登录IP；\n\n[0035]所述判断模块，用于：\n\n[0036]获取所述签核发起用户发送登录请求时的登录IP；\n\n[0037]判断所述登录IP是否存在于预先存储的已验证IP数据库中；\n\n[0038]若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0039]若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0040]进一步的，在一个具体的实施例中，所述登录环境具体包括登录终端；\n\n[0041]所述判断模块，用于：\n\n[0042]获取所述签核发起用户发送登录请求的终端的终端信息；\n\n[0043]判断所述终端信息是否存在于预先存储的已验证终端信息数据库中；\n\n[0044]若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0045]若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0046]进一步的，在一个具体的实施例中，所述实时信息包括：实时视频信息、实时音频信息、实时指纹信息中一个或多个的任意组合；\n\n[0047]所述验证模块，用于：\n\n[0048]提示所述签核发起用户提供实时信息；\n\n[0049]在获取到所述签核发起用户提供的实时信息之后，对所述签核发起用户的实时信息进行关于是否是所述签核发起用户本人的验证；\n\n[0050]获取实时信息验证的结果；其中所述实时信息验证的结果中包括通过验证的实时信息的数量。\n\n[0051]进一步的，在一个具体的实施例中，所述处理模块，用于：\n\n[0052]确定通过验证的实时信息的数量以及所有进行了验证的实时信息的数量；\n\n[0053]基于通过验证的实时信息的数量占所有进行了验证的实时信息的数量的比值确定授予所述签核发起用户的权限；其中比值越大，授予所述签核发起用户的权限越大。\n\n[0054]与现有技术相比，本发明实施例提出了一种签核发起用户管理方法和设备，应用于电子签核过程，其中，该签核发起用户管理方法包括：当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常；若判断结果为是，对所述签核发起用户进行实时信息验证；基于实时信息验证的结果确定授予所述签核发起用户的权限。以此，通过上述方法，通过对签核发起用户进行验证，提高了电子签核过程的安全性。\n\n附图说明\n\n[0055]为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。\n\n[0056]图1为本发明实施例提出的一种签核发起用户管理方法流程示意图；\n\n[0057]图2为本发明实施例提出的一种判断登录环境是否异常的方法流程示意图；\n\n[0058]图3为本发明实施例提出的一种判断登录环境是否异常的方法流程示意图；\n\n[0059]图4为本发明实施例提出的一种签核发起用户管理设备的结构示意图。\n\n具体实施方式\n\n[0060]下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。通常在此处附图中描述和出示的本发明实施例的组件可以以各种不同的配置来布置和设计。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。\n\n[0061]针对现有技术中的缺陷，本发明人发现在实际的应用中，签核发起用户出现的安全问题较大，为此，本发明提出了一种签核发起用户管理方法和设备，应用于电子签核过程，用以提高电子签核过程的安全性。\n\n[0062]具体的，本发明提出了以下具体的实施例：\n\n[0063]实施例1\n\n[0064]本发明实施例1提出了一种签核发起用户管理方法，应用于电子签核过程，如图1所示，包括以下步骤：\n\n[0065]步骤101、当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常。\n\n[0066]在此通过一个具体的例子来对签核过程进行说明，在一个具体的实施例中，例如签核请求可以为关于请假的签核请求，某公司的员工1想向公司请假，为此需要发起一个关于请假的签核请求，在该发起签核的过程中，员工1即为签核发起用户。\n\n[0067]而除了关于请假的签核请求以外，签核请求还可以有很多其他的实施例，例如关于报销的签核请求，以及关于升迁命令的签核请求等等，而对应的，发起签核过程的用户(也即发送签核请求的用户)即为签核发起用户。\n\n[0068]签核发起用户首先需要登录，才能发起签核过程，因此签核发起用户会发送登录请求，具体的登录请求可以包括有账户，密码等登录信息，在一个具体的实施例中，输入账户以及密码的环境即为登录环境。\n\n[0069]而考虑到登录环境的安全性直接影响到电子签核的安全性，由此，会对登录环境进行判断，具体的判断登录环境是否异常。\n\n[0070]以下对判断登录环境是否异常进行说明，具体的，对应的判断方式可以有多种，在此以下面两种为例来进行说明：\n\n[0071]方式1中，所述登录环境具体包括登录IP；\n\n[0072]由此，步骤101，也即所述判断所述签核发起用户的登录环境是否异常，具体的，如图2所示，可以包括以下步骤：\n\n[0073]步骤11、获取所述签核发起用户发送登录请求时的登录IP；\n\n[0074]步骤12、判断所述登录IP是否存在于预先存储的已验证IP数据库中；\n\n[0075]步骤13、若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0076]步骤14、若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0077]在方式1中，具体的验证是基于IP来进行验证的，在签核发起用户发送登录请求时，获取到所在环境的IP(Internet Protocol,网络之间互连的协议)，而在事先，有基于分配的一批IP或者已验证过一批IP来形成了已验证IP数据库，由此进行判断所获取到的IP是否存在于已验证IP数据库中；若判断结果为是，则可以确定签核发起用户所在的登录环境为已验证登录环境，也即登录环境不异常，是正常的；反之，则可以确定签核发起用户所在的登录环境不是已验证登录环境，也即是异常的。\n\n[0078]方式2中，所述登录环境具体包括登录终端；\n\n[0079]由此，步骤101，也即所述判断所述签核发起用户的登录环境是否异常，如图3所示，具体包括：\n\n[0080]步骤21、获取所述签核发起用户发送登录请求的终端的终端信息；\n\n[0081]步骤22、判断所述终端信息是否存在于预先存储的已验证终端信息数据库中；\n\n[0082]步骤23、若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0083]步骤24、若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0084]在方式2中，会事先会验证或者授权一批终端作为已验证终端，其对应的终端信息则形成已验证终端信息数据库，具体的终端信息可以包括有终端的标识，为终端设置的识别码等等。\n\n[0085]后续在进行验证时，提取到签核发起用户发送登录请求的终端的终端信息，并与已验证终端信息数据库中所存储的已验证终端信息进行匹配，若能匹配上，则说明签核发起用户所在的登录环境为已验证登录环境，也即登录环境不异常；反之，则可以确定签核发起用户所在的登录环境不是已验证登录环境，即登录环境异常。\n\n[0086]在一个具体的应用场景中，除了分别对IP以及终端进行验证以外，还可以结合两者进行组合验证，只有当IP与终端都匹配上时，才验证通过；具体的验证过程可以基于实际的需要以及实际的环境进行设置，除了IP以及终端进行验证以外，还可以设置其他的验证方式，以及其他的组合验证方式。\n\n[0087]以上，若判断结果为否，也即登录环境不异常，是正常环境，在此情况下可以授予签核发起用户全权，使得签核发起用户正常登录，并能正常发起电子签核的流程。而若是判断结果为是，也即登录环境异常，在此情况下，则需要进行进一步的操作，也即执行步骤102。\n\n[0088]步骤102、若判断结果为是，对所述签核发起用户进行实时信息验证。\n\n[0089]在一个具体的实施例中，所述实时信息可以包括：实时视频信息、实时音频信息、实时指纹信息中一个或多个的任意组合；\n\n[0090]所述对所述签核发起用户进行实时信息验证，具体包括：\n\n[0091]提示所述签核发起用户提供实时信息；\n\n[0092]在获取到所述签核发起用户提供的实时信息之后，对所述签核发起用户的实时信息进行关于是否是所述签核发起用户本人的验证；\n\n[0093]获取实时信息验证的结果；其中所述实时信息验证的结果中包括通过验证的实时信息的数量。\n\n[0094]具体的，关于实时视频信息的验证，可以提示签核发起用户上传实时的本人的视频信息，在获取到该视频信息之后，对视频信息进行人像识别，以确认是否是签核发起者本人，若判断结果为是，则可以确定实时视频信息的验证通过。\n\n[0095]关于语音验证，在一个具体的实施例中，需要在验证时签核发起用户即时读入一定文字的语音，例如该一定文字可以为：“我是xx”，在获取到语音后与预先存储的语音进行匹配，若能匹配上，则验证通过；若无法匹配上，则验证不通过。\n\n[0096]关于实时指纹信息的验证，与上述类似，通过实时获取到的指纹信息与预先存储的指纹信息进行匹配，若能匹配上，则验证通过；若无法匹配上，则验证不通过。\n\n[0097]通过以上的验证过程，可以确定验证通过的实时信息的数量，例如实时指纹信息与实时语音验证验证通过，但实时视频信息的验证没有通过，则通过的数量为2；而所示上述的验证全都通过，则通过的数量为3。以上是基于一个具体的实施例来进行的说明，具体的实时验证方式还可以有其他的方式，具体可基于需要进行设置。\n\n[0098]步骤103、基于实时信息验证的结果确定授予所述签核发起用户的权限。\n\n[0099]在一个具体的实施例中，步骤103、也即所述基于实时信息验证的结果确定授予所述签核发起用户的权限，具体包括：\n\n[0100]确定通过验证的实时信息的数量以及所有进行了验证的实时信息的数量；\n\n[0101]基于通过验证的实时信息的数量占所有进行了验证的实时信息的数量的比值确定授予所述签核发起用户的权限；其中比值越大，授予所述签核发起用户的权限越大。\n\n[0102]仍以对步骤102进行说明的例子来进行说明，若参与验证的实时信息地数量为3，而通过验证的实时信息有3个，也即全部通过验证，由此对应的比值为100％，在此情况下，授予签核发起用户全权，签核发起用户可以顺利登录，并正常发起签核过程。而若是通过验证的实时信息只有1个，对应的比值比较低，相应的，授予签核发起用户的权限就会受到影响，在一个具体的实施例中，例如权限分为最高权限，中等权限，最低权限，若比值比较低，被授予的权限可能会是最低权限。而不同的签核本身是有不同的权限要求，是否能发起签核的过程也是有权限要求的，因此若被授予的权限过低，将可能使得签核发起用户无法发起签核，或者无法发起权限需要无法被满足的签核。\n\n[0103]本发明实施例1提出了一种签核发起用户管理方法，应用于电子签核过程，包括：当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常；若判断结果为是，对所述签核发起用户进行实时信息验证；基于实时信息验证的结果确定授予所述签核发起用户的权限。以此，通过上述方法，通过对签核发起用户进行验证，提高了电子签核过程的安全性。\n\n[0104]实施例2\n\n[0105]为了对本发明进行进一步的说明，本发明实施例2还公开了一种签核发起用户管理设备，可以应用于电子签核过程，如图4所示，包括：\n\n[0106]判断模块201，用于当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常；\n\n[0107]验证模块202，用于当判断结果为是时，对所述签核发起用户进行实时信息验证；\n\n[0108]处理模块203，用于基于实时信息验证的结果确定授予所述签核发起用户的权限。\n\n[0109]具体的，在一个具体的实施例中，所述登录环境具体包括登录IP；\n\n[0110]所述判断模块201，具体用于：\n\n[0111]获取所述签核发起用户发送登录请求时的登录IP；\n\n[0112]判断所述登录IP是否存在于预先存储的已验证IP数据库中；\n\n[0113]若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0114]若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0115]具体的，在一个具体的实施例中，所述登录环境具体包括登录终端；\n\n[0116]所述判断模块201，具体用于：\n\n[0117]获取所述签核发起用户发送登录请求的终端的终端信息；\n\n[0118]判断所述终端信息是否存在于预先存储的已验证终端信息数据库中；\n\n[0119]若判断结果为是，则确定所述签核发起用户的登录环境不异常；\n\n[0120]若判断结果为否，则确定所述签核发起用户的登录环境异常。\n\n[0121]具体的，在一个具体的实施例中，所述实时信息包括：实时视频信息、实时音频信息、实时指纹信息中一个或多个的任意组合；\n\n[0122]所述验证模块202，具体用于：\n\n[0123]提示所述签核发起用户提供实时信息；\n\n[0124]在获取到所述签核发起用户提供的实时信息之后，对所述签核发起用户的实时信息进行关于是否是所述签核发起用户本人的验证；\n\n[0125]获取实时信息验证的结果；其中所述实时信息验证的结果中包括通过验证的实时信息的数量。\n\n[0126]具体的，在一个具体的实施例中，所述处理模块203，具体用于：\n\n[0127]确定通过验证的实时信息的数量以及所有进行了验证的实时信息的数量；\n\n[0128]基于通过验证的实时信息的数量占所有进行了验证的实时信息的数量的比值确定授予所述签核发起用户的权限；其中比值越大，授予所述签核发起用户的权限越大。\n\n[0129]与现有技术相比，本发明实施例提出了一种签核发起用户管理方法和设备，应用于电子签核过程，其中，该签核发起用户管理方法包括：当接收到签核发起用户的登录请求时，判断所述签核发起用户的登录环境是否异常；若判断结果为是，对所述签核发起用户进行实时信息验证；基于实时信息验证的结果确定授予所述签核发起用户的权限。以此，通过上述方法，通过对签核发起用户进行验证，提高了电子签核过程的安全性。\n\n[0130]本领域技术人员可以理解附图只是一个优选实施场景的示意图，附图中的模块或流程并不一定是实施本发明所必须的。\n\n[0131]本领域技术人员可以理解实施场景中的装置中的模块可以按照实施场景描述进行分布于实施场景的装置中，也可以进行相应变化位于不同于本实施场景的一个或多个装置中。上述实施场景的模块可以合并为一个模块，也可以进一步拆分成多个子模块。\n\n[0132]上述本发明序号仅仅为了描述，不代表实施场景的优劣。\n\n[0133]以上公开的仅为本发明的几个具体实施场景，但是，本发明并非局限于此，任何本领域的技术人员能思之的变化都应落入本发明的保护范围。\n\n');
INSERT INTO `os_patent_instruction_text` VALUES (12916, 22745, 'TECHNICAL FIELD\n\n[0001]The present invention relates to a rare-earth magnetic powder that can be used effectively to make a bonded magnet and to a bonded magnet made of such a magnetic powder. More particularly, the present invention relates to an R-T-B-C based rare-earth magnet in which carbon (C) is substituted for a portion of boron (B).\n\nBACKGROUND ART\n\n[0002]Currently, R-T-B based (where R is at least one of the rare-earth elements including Y, T is a transition metal including iron as its main ingredient, and B is boron) rare-earth magnets are extensively used as high-performance magnets in a broad variety of applications. In order to not just save, or at least use more efficiently, valuable natural resources but also cut down the manufacturing cost of the R-T-B based rare-earth magnets, it is important to make those R-T-B based rare-earth magnets recyclable.\n\n[0003]The grinding sludge and fine powder, which are produced during the manufacturing process of R-T-B based sintered magnets, are oxidizable so easily as to possibly ignite spontaneously within the air atmosphere. Accordingly, the sludge and fine powder are normally oxidized intentionally by incineration or any other suitable process so as to turn into chemically stabilized oxides. If those oxides are subjected to a chemical process such as acid dissolution, the rare-earth components thereof can be separated and extracted.\n\n[0004]Meanwhile, techniques of recycling final R-T-B based magnet products into the R-T-B based material alloy by re-melting or any other process are also under research and development.\n\n[0005]However, if the R-T-B based rare-earth magnets are re-melted, then oxygen can be sufficiently removed from the rare-earth magnets but the carbon content thereof rather increases. Other problems may also be caused by the re-melting technique.\n\n[0006]It has been generally believed that to improve the magnet performance and anticorrosiveness of R-T-B based rare-earth magnets, impurities such as oxygen and carbon should be eliminated from the magnets as much as possible. According to this point of view, the technique of removing those impurities is a key to making the R-T-B based rare-earth magnets recyclable more easily and more effectively.\n\n[0007]However, if a special process is required to remove oxygen and carbon, then the manufacturing cost will rise significantly and cannot be reduced effectively. This constitutes a serious obstacle to recycling the rare-earth magnets successfully.\n\n[0008]In attempting to recycle a rare-earth bonded magnet on the other hand, the bonded magnet may be separated into a magnetic powder and a binder resin, and then only the magnetic powder may be subjected to a recycling process. According to this technique, however, such a resin includes too much carbon component to prevent the carbon in the resin from depositing or sticking onto the magnetic powder. Thus, the magnetic powder collected from the bonded magnet should include a lot of carbon and other impurities. For that reason, the bonded magnets, as well as the rare-earth sintered magnets, also require a special carbon removal process, thus making the rare-earth bonded magnets non-recyclable.\n\n[0009]In order to overcome the problems described above, a primary object of the present invention is to provide an R-T-B-C based rare-earth alloy magnetic material, which includes carbon (C) as an indispensable element but can still exhibit excellent magnetic properties, while making rare-earth magnets recyclable.\n\nDISCLOSURE OF INVENTION\n\n[0010]An R-T-B-C based rare-earth alloy magnetic material according to the present invention (where R is at least one of the rare-earth elements including Y, T is a transition metal including iron as its main ingredient, B is boron, and C is carbon) includes a first compound phase with an R2Fe14B type crystal structure and a second compound phase having a diffraction peak at a site with an interplanar spacing d of 0.295 nm to 0.300 nm. An intensity ratio of the diffraction peak of the second compound phase to that of the first compound phase representing a (410) plane (and having an interplanar spacing of 0.214 nm) is at least 10%.\n\n[0011]In one preferred embodiment, the mole fraction of R is 25 wt % to 35 wt % of the overall magnetic material, the total mole fraction of B and C is 0.9 wt % to 1.1 wt % of the magnetic material, and the balance of the magnetic material is T.\n\n[0012]In another preferred embodiment, the ratio of the content of C (carbon) to the total content of B (boron) and C is 0.05 to 0.75.\n\n[0013]The first compound phase preferably has an average grain size of 10 nm to 500 nm.\n\n[0014]In another preferred embodiment, the R-T-B-C based rare-earth alloy magnetic material is obtained by a method including the steps of: making a rapidly solidified alloy by rapidly quenching a melt of the R-T-B-C based rare-earth alloy; and thermally treating and crystallizing the rapidly solidified alloy.\n\n[0015]T preferably includes Fe as its main ingredient but a portion of Fe may be replaced with at least one element selected from the group consisting of Co, Ni, Mn, Cr and Al.\n\n[0016]The R-T-B-C based rare-earth alloy magnetic material may further include, as an additive, at least one element selected from the group consisting of Si, P, Cu, Sn, Ti, Zr, V, Nb, Mo and Ga.\n\n[0017]A rare-earth alloy magnetic powder according to the present invention is obtained by pulverizing any of the R-T-B-C based rare-earth alloy magnetic materials described above.\n\n[0018]A bonded magnet according to the present invention is produced by processing the rare-earth alloy magnetic powder described above.\n\n[0019]A permanent magnet according to the present invention is produced by processing the rare-earth alloy magnetic powder described above.\n\n[0020]An inventive method of making an R-T-B-C based rare-earth alloy magnetic material includes the steps of: preparing a rapidly solidified alloy by rapidly quenching a melt of an R-T-B-C based rare-earth alloy (where R is at least one of the rare-earth elements including Y, T is a transition metal including iron as its main ingredient, B is boron, and C is carbon); and thermally treating and crystallizing the rapidly solidified alloy. The step of thermally treating results in producing a first compound phase with an R2Fe14B type crystal structure and a second compound phase having a diffraction peak at a site with an interplanar spacing d of 0.295 nm to 0.300 nm. An intensity ratio of the diffraction peak of the second compound phase to that of the first compound phase representing a (410) plane is at least 10%.\n\n[0021]Another inventive method of making an R-T-B-C based rare-earth alloy magnetic material includes the step of obtaining the R-T-B-C based rare-earth alloy magnetic material, including a first compound phase with an R2Fe14B type crystal structure and a second compound phase having a diffraction peak at a site with an interplanar spacing d of 0.295 nm to 0.300 nm, by rapidly quenching a melt of an R-T-B-C based rare-earth alloy (where R is at least one of the rare-earth elements including Y, T is a transition metal including iron as its main ingredient, B is boron, and C is carbon). An intensity ratio of the diffraction peak of the second compound phase to that of the first compound phase representing a (410) plane is at least 10%.\n\n[0022]A pulverizing process step is preferably performed before and/or after the step of thermally treating.\n\n[0023]An inventive method for producing a bonded magnet includes the steps of: preparing a powder of the R-T-B-C based rare-earth alloy magnetic material that has been obtained by one of the methods described above; and compounding the powder and a binder material together and molding the compound.\n\n[0024]Still another inventive method of making an R-T-B-C based rare-earth alloy magnetic material includes the steps of: preparing an R-T-B-C based rare-earth rapidly solidified alloy (where R is at least one of the rare-earth elements including Y, T is a transition metal including iron as its main ingredient, B is boron, and C is carbon) by melting and rapidly quenching and solidifying a collected and used R-T-B based rare-earth magnet; and thermally treating and crystallizing the R-T-B-C based rare-earth rapidly solidified alloy.\n\n[0025]In one preferred embodiment, the step of thermally treating results in producing a first compound phase with an R2Fe14B type crystal structure and a second compound phase having a diffraction peak at a site with an interplanar spacing d of 0.295 nm to 0.300 nm, and an intensity ratio of the diffraction peak of the second compound phase to that of the first compound phase representing a (410) plane is at least 10%.\n\n[0026]An inventive method for producing a bonded magnet includes the steps of: preparing a powder of the R-T-B-C based rare-earth alloy magnetic material that has been obtained by one of the methods described above; and compounding the powder and a binder material together and molding the compound.\n\nBRIEF DESCRIPTION OF DRAWINGS\n\n[0027]FIG. 1(a) is a cross-sectional view illustrating an overall configuration for an ultra rapid quenching machine for use in a method of making an R-T-B-C based rare-earth alloy magnetic material according to the present invention.\n\n[0028]FIG. 1(b) shows, on a larger scale, a portion of the machine to rapidly quench and solidify the alloy.\n\n[0029]FIG. 2 is a graph showing the XRD pattern of a rapidly solidified thin strip of mother alloy E yet to be thermally treated and crystallized, in which the abscissa represents the diffraction angle (2θ) and the ordinate represents the diffraction peak intensity.\n\n[0030]FIG. 3 is a graph showing the XRD pattern of a rapidly solidified thin strip of mother alloy G yet to be thermally treated and crystallized, in which the abscissa represents the diffraction angle (2θ) and the ordinate represents the diffraction peak intensity.\n\n[0031]FIG. 4 is a graph showing the XRD pattern of a thermally treated and crystallized alloy as Sample No. 22, in which the abscissa represents the diffraction angle (2θ) and the ordinate represents the diffraction peak intensity.\n\n[0032]FIG. 5 is a graph showing the XRD pattern of a thermally treated and crystallized alloy as Sample No. 8, in which the abscissa represents the diffraction angle (2θ) and the ordinate represents the diffraction peak intensity.\n\n[0033]FIG. 6 is a graph showing how the magnetic properties of an R-T-B-C based rare-earth alloy magnetic material represented by the formula Nd30.0Fe69.0B(1.0-X)CX (and thermally treated at 873 K for 300 seconds) changed with the carbon ratio X that fell within the range of 0 to 0.75.\n\n[0034]FIG. 7 is a graph similar to FIG. 6 and shows how the magnetic properties of an R-T-B-C based rare-earth alloy magnetic material represented by the formula Nd30.0Fe59.0Co10.0B(1.0-X)CX (and thermally treated at 873 K for 300 seconds) changed with the carbon ratio X that fell within the range of 0 to 0.75.\n\n[0035]FIG. 8 is a graph showing how the magnetic properties of an R-T-B-C based rare-earth alloy magnetic material represented by the formula Nd30.0Fe69.0B0.75C0.25 changed with the heat treatment temperature T that fell within the range of 873 K to 1,073 K (i.e., 600° C. to 800° C.).\n\n[0036]FIG. 9 is a graph showing how the peak intensity ratio of an R-T-B-C based rare-earth alloy magnetic material represented by either Nd30.0Fe69.0B0.75C0.25 or Nd30.0Fe69.0B0.50C0.50 changed with the heat treatment temperature T falling within a broad range.\n\nBEST MODE FOR CARRYING OUT THE INVENTION\n\n[0037]The present inventors analyzed an R-T-B based rare-earth magnetic material, including carbon (C) as its indispensable component, from various angles. As a result, the present inventors discovered that if a molten alloy satisfying a certain composition range was solidified by a rapid quenching process and then thermally treated in an appropriate temperature range, not only an R2Fe14B type compound with hard magnetic properties but also a previously unknown compound crystalline phase, having a diffraction peak at a site with an interplanar spacing d of 0.295 nm to 0.300 nm (e.g., around d=0.298 nm), were produced. The present inventors acquired the basic idea of the present invention from this discovery.\n\n[0038]However, if the amount of carbon in the alloy, the composition range of any other component, or the condition of the heat treatment process for crystallization is changed, then the compound crystalline phase, having a diffraction peak at a site with an interplanar spacing d of 0.295 nm to 0.300 nm (when CuKα is used as an X-ray source, around 2θ=30 degrees) is no longer produced at a detectible level. Such a compound crystalline phase will be referred to herein as a “second compound phase” for convenience sake. The crystal structure of this second compound phase has not yet been elucidated so far, but may well be regarded as playing an important role in improving magnetic properties.\n\n[0039]The present inventors discovered and confirmed via experiments that if the second compound phase was produced with the amount of carbon in the alloy, the composition ranges of other components and the conditions of the heat treatment process for crystallization adjusted appropriately and if the intensity ratio of the diffraction peak of the second compound phase to that of the R2Fe14B type compound phase representing a (410) plane (and having an interplanar spacing of 0.214 nm) was at least 10%, sufficiently good magnetic properties were achieved in practice. In order to achieve even better magnetic properties, this peak intensity ratio is preferably 30% or more, and even more preferably 50% or more.\n\n[0040]R-T-B-C based rare-earth alloy magnetic materials, to which carbon (C) is added intentionally, have already been reported. However, the second compound phase having such a diffraction peak has never been observed. The reason is believed to be as follows. Specifically, the second compound phase being produced is sensible to the composition of the material alloy or the heat treatment condition. Accordingly, if the rare-earth alloy magnetic material is made under normal conditions, then no second compound phase having such a diffraction peak will be produced. Or even if that compound phase is produced, its amount will be very small.\n\n[0041]According to the present invention, the second compound is produced by adding an appropriate amount of carbon to the material alloy such that carbon substitutes for a portion of boron in the alloy. Then, the magnetic properties such as the remanence thereof improve and the weather resistance thereof increases.\n\n[0042]In this manner, according to the present invention, the carbon component, which has been treated as an impurity, can be incorporated as an indispensable component. Thus, the present invention is applicable for use in recycling an R-T-B based sintered magnet or an R-T-B based bonded magnet. That is to say, a material alloy including carbon component can be obtained from the used and collected R-T-B based sintered or bonded magnet, and then efficiently processed into an R-T-B-C based rare-earth alloy magnetic material according to the present invention. A bonded magnet, in particular, normally uses a resin as a binder to bond magnetic powder particles together as described above. Thus, a carbon based substance often sticks strongly to the surface of the magnet. However, even such a magnet can also be used effectively as a material according to the present invention.\n\n[0043]It should be noted that the present inventors confirmed that the magnetic material of the present invention exhibited not only excellent magnetic properties but also good quality in weather resistance, for example.\n\n[0044]According to the present invention, the total amount of boron and carbon (i.e., (B+C)) is preferably 0.9 wt % to 1.1 wt %, while the carbon ratio (i.e., C/(B+C)) is preferably 0.05 to 0.75.\n\n[0045]Optionally, a portion of Fe included in the material of the present invention may be replaced with at least one element selected from the group consisting of Co, Ni, Mn, Cr and Al. Also, at least one element selected from the group consisting of Si, P, Cu, Sn, Ti, Zr, V, Nb, Mo and Ga may be added thereto.\n\n[0046]Hereinafter, preferred embodiments of the present invention will be described.\n\nMelt-Quenching Machine\n\n[0047]The machine shown in FIG. 1(a) includes a material alloy melting chamber 1 and a material alloy quenching chamber 2, in which a vacuum or an inert atmosphere is maintained at an adjustable pressure. Specifically, FIG. 1(a) illustrates an overall arrangement of the machine, while FIG. 1(b) illustrates a portion of the machine on a larger scale.\n\n[0048]As shown in FIG. 1(a), the melting chamber 1 includes: a melt crucible 3 to melt, at an elevated temperature, a material 20 that has been mixed to have a desired magnet alloy composition; a reservoir 4 with a teeming nozzle 5 at the bottom; and a mixed material feeder 8 to supply the mixed material into the melt crucible 3 while maintaining an airtight condition. The reservoir 4 stores the melt 21 of the material alloy therein and is provided with a heater (not shown) to maintain the temperature of the melt teemed therefrom at a predetermined level.\n\n[0049]The quenching chamber 2 includes a rotating chill roller 7 for rapidly quenching and solidifying the melt 21 that has been ejected through the teeming nozzle 5.\n\n[0050]In this machine, the atmosphere and pressure inside of the melting and quenching chambers 1 and 2 are controllable within prescribed ranges. For that purpose, atmospheric gas inlet ports 1b, 2b and 8b and outlet ports 1a, 2a and 8a are provided at appropriate positions of the machine. In particular, the gas outlet port 2a is connected to a pump to control the absolute pressure in the quenching chamber 2 within a range of vacuum to 80 kPa.\n\n[0051]The melt crucible 3 may define a desired tilt angle to pour the melt 21 through a funnel 6 into the reservoir 4. The melt 21 is heated in the reservoir 4 by the heater (not shown).\n\n[0052]The teeming nozzle 5 of the reservoir 4 is positioned on the boundary wall between the melting and quenching chambers 1 and 2 to drip the melt 21 from the reservoir 4 onto the surface of the chill roller 7, which is located under the nozzle 5. The orifice diameter of the teeming nozzle 5 may be 0.5 mm to 2.0 mm, for example. If the viscosity of the melt 21 is high, then the melt 21 cannot flow through the teeming nozzle 5 easily. In this embodiment, however, the pressure in the quenching chamber 2 is kept lower than the pressure in the melting chamber 1. Accordingly, an appropriate pressure difference is created between the melting and quenching chambers 1 and 2, and the melt 21 can be teemed smoothly. In addition, since the material alloy of the present invention includes carbon, the molten alloy has so low viscosity as to drip constantly enough.\n\n[0053]The chill roller 7 is preferably made of Cu, Fe or an alloy including Cu or Fe. This is because if the chill roller is made of a material other than Cu or Fe, the resultant rapidly solidified alloy cannot leave the chill roller easily and might wind around the roller. The chill roller 7 may have a diameter of 300 mm to 500 mm, for instance. The water-cooling capability of a water cooler provided inside of the chill roller 7 is calculated and adjusted based on the latent heat of solidification and the volume of the melt teemed per unit time.\n\n[0054]The machine shown in FIGS. 1(a) and 1(b) can rapidly solidify 10 kg of material alloy in 10 to 20 minutes, for example. The rapidly solidified alloy obtained in this manner is in the form of an alloy thin strip (or alloy ribbon) 22 with a thickness of 10 μm to 300 μm and a width of 2 mm to 3 mm, for example.\n\nMelt-Quenching Process\n\n[0055]First, the melt 21 of the material alloy, having the composition described above, is prepared and stored in the reservoir 4 of the melting chamber 1 shown in FIG. 1(a). In this preferred embodiment, carbon is introduced into the material alloy by adding ferrocarbon thereto. The material alloy may also be obtained from collected and used rare-earth sintered magnets or bonded magnets.\n\n[0056]Next, the melt 21 is dripped through the teeming nozzle 5 onto the water-cooled roller 7 to contact with, and be rapidly cooled and solidified by, the chill roller 7 within a low-pressure Ar atmosphere. In this case, an appropriate rapid solidification technique, making the cooling rate controllable precisely, is preferably adopted. In this embodiment, the melt 21 is preferably cooled at a rate of 102° C./s to 107° C./s.\n\n[0057]A period of time during which the melt 21 is quenched by the chill roller 7 is equivalent to an interval between a point in time the alloy contacted with the outer circumference of the rotating chill roller 7 and a point in time the alloy leaves the roller 7. In this period of time, the alloy has its temperature decreased to be solidified. Thereafter, the solidified alloy leaves the chill roller 7 and travels within the inert atmosphere. While the thin-strip alloy is traveling, the alloy has its heat dissipated into the atmospheric gas. As a result, the temperature of the alloy further drops.\n\n[0058]In this preferred embodiment, a rapidly solidified alloy including amorphous phases is obtained by controlling the roller surface velocity within the range of 5 m/s to 50 m/s. The reasons are as follows. Specifically, if the roller surface velocity is less than 5 m/s, then crystalline phases with excessively large sizes nucleate and grow and the desired microcrystalline structure cannot be formed. However, a roller surface velocity exceeding 50 m/s is normally hard to realize by mass producible equipment. Also, even if such a high roller surface velocity could be realized, the magnetic properties should not improve so dramatically. The roller surface velocity is more preferably 20 m/s to 50 m/s.\n\n[0059]In the present invention, the technique of rapidly quenching the melt is not limited to the single roller melt-spinning method described above. Examples of other applicable techniques include a twin roller method, a gas atomization method, a strip casting method, and a rapid quenching technique utilizing the roller and gas atomization methods in combination.\n\n[0060]According to the present invention, the material alloy includes carbon, and therefore amorphous phases can be created more efficiently. Thus, even though the cooling rate is relatively low, a rapidly solidified alloy including a lot of amorphous phases can still be produced with high reproducibility. For that reason, a magnetic alloy with excellent magnetic properties can be obtained even by a strip casting process, which ensures high mass productivity but a relatively low cooling rate among various rapid quenching techniques mentioned above.\n\nHeat Treatment\n\n[0061]In this preferred embodiment, the heat treatment is conducted within an argon atmosphere. Preferably, the alloy is heated at a temperature rise rate of 5° C./s to 200° C./s, maintained at a temperature of 550° C. to 750° C. for an amount of time of 30 seconds to 60 minutes, and then cooled to room temperature. This heat treatment results in crystal growth of the R2Fe14B crystalline phase and second compound phase in the amorphous phases.\n\n[0062]If the heat treatment temperature is lower than 550° C., then no R2Fe14B type crystalline phases will nucleate and the coercivity will be unnoticeably low. On the other hand, if the heat treatment temperature exceeds 750° C., the grain growth of the respective constituent phases will advance too much, thus decreasing the remanence Br and deteriorating the loop squareness of the demagnetization curve. For these reasons, the heat treatment temperature is preferably 550° C. to 750° C., more preferably 550° C. to 700° C.\n\n[0063]To prevent the alloy from being oxidized, the heat treatment is preferably conducted within an inert gas (e.g., Ar or N2 gas) atmosphere at a pressure of 50 kPa or less. The heat treatment may also be performed within a vacuum of 0.1 kPa or less.\n\n[0064]It should be noted that the thin strip of the rapidly solidified alloy may be coarsely cut or pulverized before subjected to the heat treatment.\n\n[0065]After thermally treated, the resultant magnetic material is finely pulverized to obtain a magnet powder. Then, various types of bonded magnets can be made from this powder by performing known process steps on this powder. In making a bonded magnet, the magnet powder of the present invention is compounded with an epoxy or nylon resin binder and then the compound is molded into a desired shape. In this case, a magnet powder of any other type (e.g., an Sm-T-N based magnet powder or hard ferrite magnet powder) may be mixed with the magnet powder of the present invention.\n\n[0066]Using the resultant bonded magnet, motors, actuators and other rotating machines can be produced.\n\n[0067]If the magnet powder is used to make an injection-molded bonded magnet, the powder is preferably pulverized to a mean particle size of 150 μm or less, more preferably 1 μm to 100 μm. On the other hand, if the magnet powder is used to make a compressed bonded magnet, the powder is preferably pulverized to a mean particle size of 300 μm or less, more preferably 50 μm to 200 μm, and even more preferably 50 μm to 150 μm with a bimodal size distribution.\n\nEXAMPLES\n\n[0068]First, mother alloys having the respective compositions shown in the following Table 1 were prepared by an induction melting process. A raw material with a purity of 99.5% or more was used for Nd, ferrocarbon including 3.0 mass % of carbon was used for carbon, and a raw material with a purity of 99.9% or more was used for each of the other components. The material alloy was melted in an alumina crucible within an Ar atmosphere.\n\n[0069]TABLE 1wt %SignNdFeCoBCM1M2A25.074.20.00.400.40B27.072.10.00.450.45C27.071.80.00.600.60D28.071.10.00.550.35E30.069.00.01.000.00F30.069.00.00.750.25G30.069.00.00.500.50H30.069.00.00.750.25I30.069.00.00.001.00J30.068.60.00.750.25Al: 0.40K30.068.20.00.750.25Al: 0.50Cu: 0.30L30.063.55.00.750.25Ga: 0.50M30.063.25.00.750.25Mo: 0.80N30.058.410.00.500.50Cr: 0.30Al: 0.30O35.063.80.00.600.60\n\n[0070]No carbon (C) was added to mother alloy E. In mother alloy I, boron (B) was entirely replaced with carbon (C). The content of Nd in mother alloy A was 25 wt %, which was the smallest among the mother alloys shown in Table 1. On the other hand, the content of Nd in mother alloy O was 35 wt %, which was larger than any other mother alloy shown in Table 1.\n\n[0071]The melt of each of these mother alloys A through O was rapidly cooled and solidified by a single roller process, thereby obtaining a thin strip of rapidly solidified alloy. A chill roller for use in the rapid quenching process was made of Cu, and was rotated at a peripheral velocity of 35 m/s. The mother alloy was melted in a quartz tube having an orifice with a diameter of 0.7 mm. The distance (or the gap) between the end of the orifice of the quartz tube and the roller surface was defined at 0.5 mm. The rapid quenching atmosphere was Ar gas at a pressure of 50 kPa. The Ar gas used had a differential pressure of 50 kPa to eject the melt strongly enough.\n\n[0072]FIGS. 2 and 3 are graphs each showing the XRD pattern of a rapidly solidified thin strip, which was measured with a CuKα radiation source before being thermally treated and crystallized. The abscissa represents the diffraction angle 2θ and the ordinate represents the diffraction intensity. Specifically, FIG. 2 relates to a comparative example in which mother alloy E including no additive carbon (C) was used, while FIG. 3 relates to an example of the present invention in which mother alloy G including an appropriate amount of carbon was used.\n\n[0073]Each of the rapidly solidified alloy thin strips obtained by the rapid quenching process included a lot of crystalline phases as can be seen from XRD data shown in FIGS. 2 and 3, and had a coercivity HcJ of 100 kA/m or less.\n\n[0074]Such a rapidly solidified alloy thin strip was pulverized with an agate mortar to a size of 500 μm or less, and then subjected to a heat treatment process for crystallization so as to be maintained at a temperature of 500° C. to 1,000° C. for 30 minutes within an Ar atmosphere. The thermally treated powders were subjected to magnetic property evaluation with a VSM and X-ray diffraction analysis. The results are shown in the following Table 2:\n\n[0075]TABLE 2Heat TreatmentMagneticDiffractionMotherTemperaturePropertiesaroundNo.Alloy(° C.)Br (T)HcJ (kA/m)d = 0.298 nm1B6000.90890◯2D6000.881140◯3F5600.77>1200⊚4F6100.78>1200⊚5F6500.761170⊚6F7000.731030⊚7G5700.74>1200⊚8G6000.71>1200⊚9H5800.74>1200⊚10H6200.701190⊚11H7000.701050⊚12J5700.78>1200⊚13J6500.79>1200⊚14K6100.79>1200⊚15L6100.76>1200⊚16M6000.72>1200⊚17N6000.70>1200⊚18N7000.68>1200⊚19C6000.78470Δ20A6000.67180X21O6000.61>1200⊚22E6000.73>1200X23I6000.50150X24G5000.42120X25G8000.35210Δ\n\n[0076]Table 2 shows the sign of the mother alloy used, heat treatment temperature, magnetic properties (such as remanence Br and coercivity HcJ) and presence or absence of a diffraction peak around d=0.298 nm (i.e., in the vicinity of 2θ=30.0 degrees) for each sample. On the rightmost column of Table 2, the double circle ⊚ indicates that a diffraction peak, of which the intensity was 80% or more of that of the R2Fe14B type crystalline phase representing a (410) plane (2θ=42.2 degrees), was observed around d=0.298 nm (i.e., in the vicinity of 2 θ=30.0 degrees). The single circle ◯ indicates that a diffraction peak, of which the intensity was 10% or more of that diffraction peak (2θ=42.2 degrees), was observed around d=0.298 nm (i.e., in the vicinity of 2θ=30.0 degrees). The open triangle Δ indicates that a diffraction peak, of which the intensity was 5% to 10% of that diffraction peak (2θ=42.2 degrees), was observed around d=0.298 nm (i.e., in the vicinity of 2θ=30.0 degrees). And the cross × indicates that no diffraction peaks were observed around d=0.298 nm.\n\n[0077]As can be seen from Table 2, when a diffraction peak with a sufficient intensity was observed around d=0.298 nm, excellent magnetic properties were achieved. On the other hand, if a rapidly solidified alloy was made from the melt of mother alloy E, to which no carbon was added at all, substantially no second compound phase was produced and its diffraction peak was not observed around d=0.298 nm even when the alloy was heated and crystallized at 600° C. after that.\n\n[0078]Also, even if a rapidly solidified alloy was made from mother alloy G with an appropriate composition, no diffraction peaks of the second compound phase were observed around d=0.298 nm and the magnetic properties were bad when the heat treatment for crystallization was conducted at a temperature of 500° C. or less or at a temperature of 800° C. or more.\n\n[0079]FIGS. 4 and 5 are graphs each showing the XRD pattern of the rapidly solidified thin strip that was already subjected to the heat treatment for crystallization. Specifically, FIG. 4 relates to Sample No. 22 as a comparative example in which mother alloy E including no additive carbon (C) was used, while FIG. 5 relates to Sample No. 8 as an example of the present invention in which mother alloy G including an appropriate amount of carbon was used.\n\n[0080]As can be seen from FIG. 5, in addition to a peak representing the R2Fe14B type compound with hard magnetic properties, another diffraction peak was clearly observed in Sample No. 8 at a site with an interplanar spacing d of 0.295 nm to 0.300 nm (i.e., around d=0.298 nm: 2θ=30.0 degrees). In FIG. 4 on the other hand, no diffraction peaks were observed around the interplanar spacing d=0.298 nm (i.e., in the vicinity of 2θ=30.0 degrees).\n\n[0081]In FIG. 5, the intensity ratio of the diffraction peak of the second compound phase (i.e., in the vicinity of 2θ=30.0 degrees) to that of the R2Fe14B type crystalline phase representing a (410) plane (i.e., 2θ=42.2 degrees) was 100% or more.\n\n[0082]Next, the relationship between the carbon (C) ratio X to the sum of boron (B) and carbon (C) and the magnetic properties will be described with reference to FIGS. 6 through 9.\n\n[0083]FIG. 6 shows how the magnetic properties of an R-T-B-C based rare-earth alloy magnetic material represented by the formula Nd30.0Fe69.0B(1.0-X)CX changed with the carbon ratio X that fell within the range of 0 to 0.75. In this case, the magnetic material', '技术领域 \n\n [0001] 稀土磁粉技术领域本发明涉及一种可以有效地用于制造粘结磁体的稀土磁粉以及由这种磁粉制成的粘结磁体。 更具体地,本发明涉及基于R-T-B-C的稀土磁体,其中碳(C)代替一部分硼(B)。 \n\n 背景技术 \n\n [0002] 目前,基于RTB的稀土磁体被广泛用作高性能磁体,其中RT是稀土元素,其中R是包括Y的稀土元素中的至少一种,T是以铁为主要成分的过渡金属,B是硼。 广泛的应用。 为了不仅节省或至少更有效地利用宝贵的自然资源,同时降低基于R-T-B的稀土磁体的制造成本,重要的是使那些基于R-T-B的稀土磁体可回收。 \n\n [0003] 在基于R-T-B的烧结磁体的制造过程中产生的研磨污泥和细粉易于氧化,以至于可能在空气中自燃。 因此,污泥和细粉通常通过焚烧或任何其他合适的方法被有意地氧化,从而变成化学稳定的氧化物。 如果对这些氧化物进行诸如酸溶解的化学处理,则可以分离和提取其稀土成分。 \n\n [0004] 同时,也正在研究通过再熔融或任何其他方法将最终的基于R-T-B的磁体产品再循环到基于R-T-B的材料合金中的技术。 \n\n [0005] 然而,如果将基于R-T-B的稀土磁体重新熔化,则可以从稀土磁体中充分除去氧,但是其碳含量反而增加了。 重熔技术也可能引起其他问题。 \n\n [0006] 通常认为,为了提高R-T-B系稀土类磁铁的磁铁性能和耐腐蚀性,应尽可能地从磁铁中除去氧和碳等杂质。 根据这种观点,去除那些杂质的技术是使基于R-T-B的稀土磁体更容易和更有效地回收的关键。 \n\n [0007] 然而,如果需要特殊的工艺来去除氧气和碳,则制造成本将显着增加并且不能有效地降低。 这对成功地回收稀土磁体构成了严重的障碍。 \n\n [0008] 另一方面,在尝试使稀土类粘结磁体回收时,可以将粘结磁体分离成磁粉和粘结剂树脂,然后可以仅对磁粉进行回收处理。 然而,根据该技术,这种树脂包含太多的碳成分,以防止树脂中的碳沉积或粘附在磁性粉末上。 因此,从粘结磁体收集的磁粉应包含许多碳和其他杂质。 因此,粘结磁体以及稀土类烧结磁体也需要特殊的除碳处理,因此稀土粘结磁体不可回收。 \n\n [0009] 为了克服上述问题,本发明的主要目的是提供基于RTBC的稀土合金磁性材料,其包含碳(C)作为必不可少的元素,但是仍然表现出优异的磁性能,同时使其稀有。 磁铁可回收。 \n\n 发明内容 \n\n [0010] 根据本发明的基于RTBC的稀土合金磁性材料(其中R为包括Y的稀土元素中的至少一种,T为以铁为主要成分的过渡金属,B为硼,C为碳 )包括带有R的第一化合物相 2 铁 14 B型晶体结构和第二化合物相,该第二化合物相在晶面间距d为0.295nm至0.300nm的部位处具有衍射峰。 第二化合物相的衍射峰与代表(410)面(并且具有0.214nm的晶面间距)的第一化合物相的衍射峰的强度比为至少10%。 \n\n [0011] 在一个优选的实施方案中,R的摩尔分数为整个磁性材料的25重量%至35重量%,B和C的总摩尔分数为磁性材料的0.9重量%至1.1重量%,并且 磁性材料是T。 \n\n [0012] 在另一个优选的实施方案中,C(碳)的含量与B(硼)和C的总含量之比为0.05至0.75。 \n\n [0013] 第一化合物相优选具有10nm至500nm的平均晶粒尺寸。 \n\n [0014] 在另一个优选的实施方案中,R-T-B-C基稀土合金磁性材料通过以下方法获得:通过快速淬火R-T-B-C基稀土合金的熔体来制备快速凝固的合金; 并对快速凝固的合金进行热处理和结晶。 \n\n [0015] T优选包含Fe作为其主要成分,但是Fe的一部分可以被选自由Co,Ni,Mn,Cr和Al组成的组中的至少一种元素代替。 \n\n [0016] 所述基于R-T-B-C的稀土合金磁性材料可以进一步包括选自Si,P,Cu,Sn,Ti,Zr,V,Nb,Mo和Ga的至少一种元素作为添加剂。 \n\n [0017] 本发明的稀土合金磁性粉末是通过将上述的R-T-B-C系稀土合金磁性材料中的任一种粉碎而得到的。 \n\n [0018] 通过加工上述稀土合金磁性粉末来制造根据本发明的粘结磁体。 \n\n [0019] 通过加工上述稀土合金磁性粉末来制造根据本发明的永磁体。 \n\n [0020] 制造基于RTBC的稀土合金磁性材料的发明方法包括以下步骤:通过快速淬火基于RTBC的稀土合金(其中R为至少一种稀土元素)的熔体来制备快速凝固的合金 包括Y,T是包括铁作为主要成分的过渡金属,B是硼,C是碳。 并对快速凝固的合金进行热处理和结晶。 热处理步骤导致产生具有R的第一化合物相 2 铁 14 B型晶体结构和第二化合物相,该第二化合物相在晶面间距d为0.295nm至0.300nm的部位处具有衍射峰。 第二化合物相的衍射峰与代表(410)面的第一化合物相的衍射峰的强度比为至少10%。 \n\n [0021] 制造基于R-T-B-C的稀土合金磁性材料的另一发明方法包括获得基于R-T-B-C的稀土合金磁性材料的步骤,所述含R-T-B-C的稀土合金磁性材料包括具有R的第一化合物相。 2 铁 14 通过快速淬火基于RTBC的稀土合金的熔体(其中R为至少一种R原子)的B型晶体结构和在平面间距d为0.295 nm至0.300 nm的位置处具有衍射峰的第二化合物相 包括Y的稀土元素,T为以铁为主要成分的过渡金属,B为硼,C为碳。 第二化合物相的衍射峰与代表(410)面的第一化合物相的衍射峰的强度比为至少10%。 \n\n [0022] 粉碎处理步骤优选在热处理步骤之前和/或之后进行。 \n\n [0023] 本发明的粘结磁体的制造方法包括以下步骤:制备通过上述方法之一获得的R-T-B-C基稀土合金磁性材料的粉末; 将粉末和粘合剂材料混合在一起并模制该化合物。 \n\n [0024] 制造基于RTBC的稀土合金磁性材料的另一种发明方法包括以下步骤:制备基于RTBC的稀土快速凝固合金(其中R为包括Y的稀土元素中的至少一种,T为过渡元素 以铁为主要成分,B为硼,C为碳的金属)通过熔融,快速淬火并固化回收后的RTB系稀土类磁铁而使其固化。  R-T-B-C基稀土快速凝固合金的热处理和结晶。 \n\n [0025] 在一个优选的实施方案中,热处理步骤导致产生具有R的第一化合物相。 2 铁 14 B型晶体结构和第二化合物相,该第二化合物相在晶面间距d为0.295nm至0.300nm的部位处具有衍射峰,并且第二化合物相与第一化合物相的衍射峰的强度比表示a。  (410)平面至少为10%。 \n\n [0026] 本发明的粘结磁体的制造方法包括以下步骤:制备通过上述方法之一获得的R-T-B-C基稀土合金磁性材料的粉末; 将粉末和粘合剂材料混合在一起并模制该化合物。 \n\n 附图说明 \n\n [0027] 图。  1( a 图1是示出用于根据本发明的制造R-T-B-C基稀土合金磁性材料的方法中的超快速淬火机的总体构造的截面图。 \n\n [0028] 图。  1( b )以更大的比例显示了机器的一部分,用于快速淬火和固化合金。 \n\n [0029] 图。 图2是示出了待热处理和结晶的母合金E的快速凝固的薄带的XRD图的图,其中横坐标表示衍射角(2θ),纵坐标表示衍射峰强度。 \n\n [0030] 图。 图3是示出待热处理和结晶的母合金G的快速凝固的薄带的XRD图案的图,其中横坐标表示衍射角(2θ),纵坐标表示衍射峰强度。 \n\n [0031] 图。 图4是示出作为样品No.22的经热处理且结晶的合金的XRD图案的图,其中横坐标表示衍射角(2θ),纵坐标表示衍射峰强度。 \n\n [0032] 图。 图5是示出作为样品No.8的经热处理且结晶的合金的XRD图案的图,其中横坐标表示衍射角(2θ),纵坐标表示衍射峰强度。 \n\n [0033] 图。 图6是表示式Nd所示的R-T-B-C系稀土合金磁性材料的磁特性的曲线图。 30.0 铁 69.0 乙 (1.0-X) C X  (并在873 K下热处理300秒)随碳比X的变化而变化,碳比X落在0至0.75的范围内。 \n\n [0034] 图。 图7是类似于图6的曲线图。 图6示出了由式Nd表示的R-T-B-C系稀土合金磁性材料的磁特性。 30.0 铁 59.0 有限公司 10.0 乙 (1.0-X) C X  (并在873 K下热处理300秒)随碳比X的变化而变化,碳比X落在0至0.75的范围内。 \n\n [0035] 图。 图8是表示式Nd所示的R-T-B-C系稀土合金磁性材料的磁特性的曲线图。 30.0 铁 69.0 乙 0.75 C 0.25  热处理温度T在873K〜1,073K(即600℃〜800℃)的范围内变化。 \n\n [0036] 图。 图9是表示以Nd为代表的R-T-B-C系稀土合金磁性材料的峰强度比的图。 30.0 铁 69.0 乙 0.75 C 0.25  或钕 30.0 铁 69.0 乙 0.50 C 0.50  热处理温度T在宽范围内变化。 \n\n 实施本发明的最佳模式 \n\n [0037] 本发明人从各种角度分析了包括碳(C)作为其必不可少的成分的基于R-T-B的稀土磁性材料。 结果,本发明人发现,如果通过快速淬火工艺使满足一定组成范围的熔融合金凝固,然后在适当的温度范围内进行热处理,则不仅R 2 铁 14 制备了具有硬磁特性但还具有未知化合物结晶相的B型化合物,该化合物的结晶峰在晶面间距d为0.295nm至0.300nm(例如,d = 0.298nm)的位置处具有衍射峰。 本发明人从该发现中获得了本发明的基本思想。 \n\n [0038] 但是,如果改变合金中的碳含量,任何其他成分的组成范围或结晶化热处理工艺的条件,则化合物晶相在晶面间距为d的位置具有衍射峰 不再以可检测的水平产生0.295 nm至0.300 nm的α(当CuKα用作X射线源时,约为2θ= 30度)。 为了方便起见,这种化合物结晶相在本文中将被称为“第二化合物相”。 到目前为止,尚未阐明该第二化合物相的晶体结构,但可以认为它在改善磁性方面起着重要作用。 \n\n [0039] 本发明人通过实验发现并确认,如果以合金中的碳量生成第二化合物相,则可以适当调整其他成分的组成范围和结晶化的热处理工艺条件,并且可以确定其强度比。 第二化合物相相对于R的衍射峰 2 铁 14 代表(410)面(且具有0.214nm的晶面间距)的B型化合物相至少为10%,实际上获得了足够好的磁性能。 为了获得更好的磁性能,该峰强度比优选为30%以上,甚至更优选为50%以上。 \n\n [0040] 已经报道了有意添加碳(C)的R-T-B-C基稀土合金磁性材料。 但是,从未观察到具有这种衍射峰的第二化合物相。 认为原因如下。 具体地,所产生的第二化合物相对材料合金的组成或热处理条件敏感。 因此,如果稀土合金磁性材料在正常条件下制成,则不会产生具有这种衍射峰的第二化合物相。 或者即使产生该复合相,其量也将非常小。 \n\n [0041] 根据本发明,通过向材料合金中添加适量的碳以使碳替代合金中的一部分硼来生产第二化合物。 然后,其剩磁等磁性能提高,并且其耐候性提高。 \n\n [0042] 以这种方式,根据本发明,可以将已经作为杂质处理的碳组分作为必不可少的组分引入。 因此,本发明可用于回收基于R-T-B的烧结磁体或基于R-T-B的粘结磁体。 也就是说,可以从使用和收集的R-T-B基烧结或粘结磁体中获得包括碳成分的材料合金,然后将其有效地加工成根据本发明的R-T-B-C基稀土合金磁性材料。 特别地,如上所述,粘结磁体通常使用树脂作为粘结剂将磁性粉末颗粒粘结在一起。 因此,碳基物质经常牢固地粘附在磁体表面上。 然而,甚至这种磁体也可以有效地用作根据本发明的材料。 \n\n [0043] 应当注意,本发明人证实,例如,本发明的磁性材料不仅表现出优异的磁性,而且表现出良好的耐候性。 \n\n [0044] 根据本发明,硼和碳的总量(即,(B + C))优选为0.9重量%至1.1重量%,而碳的比率(即,C /(B + C))优选为0.05。 到0.75。 \n\n [0045] 任选地,可以用选自由Co,Ni,Mn,Cr和Al组成的组中的至少一种元素代替本发明的材料中包括的一部分Fe。 另外,可以向其中添加选自由Si,P,Cu,Sn,Ti,Zr,V,Nb,Mo和Ga组成的组中的至少一种元素。 \n\n [0046] 在下文中,将描述本发明的优选实施例。 \n\n 熔体淬火机 \n\n [0047] 图1中所示的机器包括:  1( a )包括材料合金熔化室 1  和材料合金淬火室 2 ,其中真空或惰性气氛保持在可调压力下。 具体而言,  1( a )示出了机器的整体布置,而图2示出了机器的总体布置。  1( b )以更大的比例显示了机器的一部分。 \n\n [0048] 如图1所示。  1( a ),熔化室 1  包括:熔体坩埚 3  在高温下熔化一种材料 20  已混合以具有所需的磁铁合金成分; 一个水库 4  带吸嘴 5  在底部; 和混合材料给料机 8  将混合材料供应到熔融坩埚中 3  同时保持气密状态。 水库 4  储存熔体 21  在其中填充有材料合金,并设有加热器(未示出),以将从中收集的熔体的温度保持在预定水平。 \n\n [0049] 淬火室 2  包括旋转的冷却辊 7  用于快速淬火和固化熔体 21  通过吸嘴喷出的 5 。 \n\n [0050] 在这台机器中,熔化和淬火室内的气氛和压力 1  和 2  可控制在规定范围内。 为此,大气进气口 1 b , 2 b  和 8 b  和出口 1 a , 2 a  和 8 a  在机器的适当位置提供。 特别是出气口 2 a  连接到泵以控制淬火室中的绝对压力 2  在真空至80 kPa的范围内。 \n\n [0051] 熔体坩埚 3  可以定义所需的倾角以倾倒熔体 21  通过一个漏斗 6  进入水库 4 。 融化 21  在水箱中加热 4  通过加热器(未显示)。 \n\n [0052] 吸嘴 5  水库的 4  位于熔化室和淬火室之间的边界壁上 1  和 2  滴熔 21  从水库 4  到冷却辊的表面 7 ,位于喷嘴下方 5 。 充填喷嘴的孔口直径 5  例如,可以为0.5mm至2.0mm。 如果熔体的粘度 21  高,然后融化 21  不能流过吸嘴 5  容易。 然而,在该实施例中,淬火室中的压力 2  保持低于熔化室中的压力 1 。 因此,在熔化室和骤冷室之间产生了适当的压力差。 1  和 2 和融化 21  可以顺利地装满。 另外,由于本发明的材料合金包括碳,因此熔融合金具有如此低的粘度以至于足以不断滴落。 \n\n [0053] 冷却辊 7  优选由Cu,Fe或包含Cu或Fe的合金制成。 这是因为如果冷却辊由Cu或Fe以外的材料制成,则所得到的快速凝固的合金不能容易地离开冷却辊并且可能缠绕在辊上。 冷却辊 7  可以具有例如300mm至500mm的直径。 冷却辊内部装有水冷却器的水冷却能力 7  根据凝固潜热和每单位时间吸积的熔体体积计算和调整。 \n\n [0054] 图1至图3中所示的机器。  1( a )和 1 ( b )可以在10到20分钟内快速固化10公斤材料合金。 以这种方式获得的快速凝固的合金为合金薄带(或合金带)的形式 22  例如,具有10μm至300μm的厚度和2mm至3mm的宽度。 \n\n 熔融淬火过程 \n\n [0055] 一,融化 21  具有上述组成的材料合金的一部分被制备并存储在储罐中 4  熔化室的 1  如图所示。  1( a )。 在该优选实施例中,通过向其中添加铁碳将碳引入到材料合金中。 材料合金也可以从收集和使用的稀土烧结磁体或粘结磁体中获得。 \n\n [0056] 接下来,融化 21  通过吸嘴滴下 5  放在水冷辊上 7  与冷却辊接触并迅速冷却并固化 7  在低压Ar气氛中。 在这种情况下,优选采用适当的快速凝固技术,其使得冷却速率可精确控制。 在这个实施例中,熔体 21  最好以10的速度冷却 2 °C / s至10 7 °C /秒 \n\n [0057] 融化的一段时间 21  被冷却辊淬火 7  等于合金与旋转冷却辊的外周接触的时间点之间的间隔 7  合金及时离开辊子 7 。 在这段时间里,合金的温度降低到固化。 之后,凝固的合金离开冷却辊 7  并在惰性气氛中旅行。 当薄带合金移动时,合金的热量散发到大气中。 结果,合金的温度进一步下降。 \n\n [0058] 在该优选实施方式中,通过将辊表面速度控制在5m / s至50m / s的范围内,获得了包括非晶相的快速凝固的合金。 原因如下。 具体地,如果辊表面速度小于5m / s,则尺寸过大的结晶相成核并生长并且不能形成所需的微晶结构。 然而,通常难以通过可批量生产的设备实现超过50m / s的辊表面速度。 另外,即使可以实现如此高的辊表面速度,磁性能也不应如此显着地提高。 辊表面速度更优选为20m / s至50m / s。 \n\n [0059] 在本发明中,将熔体快速淬火的技术不限于上述的单辊熔体纺丝法。 其他适用技术的实例包括双辊法,气体雾化法,带铸法和结合使用辊和气体雾化法的快速淬火技术。 \n\n [0060] 根据本发明,材料合金包括碳,因此可以更有效地产生非晶相。 因此,即使冷却速率相对较低,仍可以以高再现性生产包括许多非晶相的快速凝固的合金。 因此,即使通过薄带连铸法也可以得到磁性优异的磁性合金,在上述各种急冷技术中,可以确保大量生产,但是冷却速度较低。 \n\n 热处理 \n\n [0061] 在该优选实施例中,热处理在氩气氛中进行。 优选地,以5℃/ s至200℃/ s的升温速率加热合金,并在550℃至750℃的温度下保持30秒至60秒的时间。 分钟,然后冷却至室温。 该热处理导致R的晶体生长 2 铁 14 B结晶相和第二化合物相处于非晶相。 \n\n [0062] 如果热处理温度低于550℃,则无R 2 铁 14 B型结晶相将成核,矫顽力会明显降低。 另一方面,如果热处理温度超过750℃,则各构成相的晶粒生长过大,因此剩磁B降低。 r  并使退磁曲线的环路矩形度恶化。 由于这些原因,热处理温度优选为550℃至750℃,更优选550℃至700℃。 \n\n [0063] 为了防止合金被氧化,优选在惰性气体(例如,Ar或N)中进行热处理。 2  50 kPa以下的气体。 热处理也可以在0.1kPa以下的真空内进行。 \n\n [0064] 应该注意的是,快速凝固的合金薄带在进行热处理之前可以粗切或粉碎。 \n\n [0065] 在热处理之后,将所得的磁性材料精细地粉碎以获得磁体粉末。 然后,可以通过对该粉末执行已知的处理步骤来由该粉末制造各种类型的粘结磁体。 在制造粘结磁体时,将本发明的磁体粉末与环氧或尼龙树脂粘合剂混合,然后将该化合物成型为期望的形状。 在这种情况下,可以将任何其他类型的磁体粉末(例如,基于Sm-T-N的磁体粉末或硬质铁氧体磁体粉末)与本发明的磁体粉末混合。 \n\n [0066] 使用所得的粘结磁体,可以生产电动机,致动器和其他旋转机械。 \n\n [0067] 如果使用磁体粉末来制造注射成型的粘结磁体,则优选将粉末粉碎至平均粒径为150μm或更小,更优选1μm至100μm。 另一方面,如果使用磁体粉末来制造压缩粘结磁体,则优选将粉末粉碎至300μm或更小的平均粒径,更优选50μm至200μm,甚至更优选50μm至150。 具有双峰尺寸分布的μm。 \n\n 例子 \n\n [0068] 首先,通过感应熔融法制备具有下表1所示的各组成的母合金。  Nd使用纯度为99.5%以上的原料,碳使用碳含量为3.0质量%的铁碳,其他成分分别使用纯度为99.9%以上的原料。 在Ar气氛中,将材料合金在氧化铝坩埚中熔融。 \n\n [0069] \n\n   表格1  重量%  标志 钕 铁 有限公司 B C M1 M2  A 25.0 74.2 0.0 0.40 0.40  B 27.0 72.1 0.0 0.45 0.45  C 27.0 71.8 0.0 0.60 0.60  D 28.0 71.1 0.0 0.55 0.35  E 30.0 69.0 0.0 1.00 0.00  F 30.0 69.0 0.0 0.75 0.25  G 30.0 69.0 0.0 0.50 0.50  H 30.0 69.0 0.0 0.75 0.25  I 30.0 69.0 0.0 0.00 1.00  J 30.0 68.6 0.0 0.75 0.25 铝:0.40  K 30.0 68.2 0.0 0.75 0.25 铝:0.50 铜:0.30  L 30.0 63.5 5.0 0.75 0.25 镓:0.50  M 30.0 63.2 5.0 0.75 0.25 钼:0.80  N 30.0 58.4 10.0 0.50 0.50 铬:0.30 铝:0.30  O 35.0 63.8 0.0 0.60 0.60 \n\n [0070] 未向母合金E中添加碳(C)。在母合金I中,硼(B)完全被碳(C)取代。 母合金A中的Nd含量为25wt%,是表1所示的母合金中最小的。另一方面,母合金O中的Nd含量为35wt%,比其他任何一种都大。 母合金见表1。 \n\n [0071] 这些母合金A至O中的每一种的熔体通过单辊工艺快速冷却并固化,从而获得快速固化的合金薄带。 用于快速淬火过程的冷却辊由Cu制成,并以35 m / s的圆周速度旋转。 将母合金在具有直径为0.7mm的孔的石英管中熔融。 石英管孔口的末端与辊子表面之间的距离(或间隙)定义为0.5 mm。 快速淬火气氛是压力为50kPa的Ar气。 所用的Ar气的压差为50 kPa,足以将熔体充分喷出。 \n\n [0072] 无花果 图2和图3是分别示出快速固化的薄带的XRD图案的图,其在进行热处理和结晶之前用CuKα辐射源测量。 横坐标表示衍射角2θ,纵坐标表示衍射强度。 具体而言, 图2涉及比较例,其中使用了不包含添加剂碳(C)的母合金E,而图3是使用了不添加碳(C)的母合金E的对比例。 图3涉及本发明的示例,其中使用了包括适量碳的母合金G。 \n\n [0073] 从快速淬火工艺获得的每个快速凝固的合金薄带包括许多结晶相,如从图1和2中所示的XRD数据可以看出的。  2和3,矫顽力H  J 100 kA / m或更小。 \n\n [0074] 用玛瑙研钵将这种快速固化的合金细带粉碎至500μm以下的尺寸,然后进行热处理以使其结晶化,以保持在500℃至1000℃的温度。 在Ar气氛中放置30分钟。 用VSM和X射线衍射分析对热处理过的粉末进行磁性能评估。 结果示于下表2: \n\n [0075] \n\n    表2  热处理 磁性 衍射  母亲 温度 物产 周围  没有。 合金 (°C) 溴(T) 立方英尺(kA / m) d = 0.298纳米  1 B 600 0.90 890 ◯  2 D 600 0.88 1140 ◯  3 F 560 0.77> 1200  ⊚  4 F 610 0.78> 1200  ⊚  5 F 650 0.76 1170 ⊚  6 F 700 0.73 1030 ⊚  7 G 570 0.74> 1200  ⊚  8 G 600 0.71> 1200  ⊚  9 H 580 0.74> 1200  ⊚  10 H 620 0.70 1190 ⊚  11 H 700 0.70 1050 ⊚  12 J 570 0.78> 1200  ⊚  13 J 650 0.79> 1200  ⊚  14 K 610 0.79> 1200  ⊚  15 L 610 0.76> 1200  ⊚  16 M 600 0.72> 1200  ⊚  17 N 600 0.70> 1200  ⊚  18 N 700 0.68> 1200  ⊚  19 C 600 0.78 470 Δ  20 A 600 0.67 180 X  21 O 600 0.61> 1200  ⊚  22 E 600 0.73> 1200  X  23 I 600 0.50 150 X  24 G 500 0.42 120 X  25 G 800 0.35 210 Δ \n\n [0076] 表2显示了所用母合金的符号,热处理温度,磁性能(例如剩磁B) r  和矫顽力H  J  )和每个样品在d = 0.298 nm附近(即2θ= 30.0度附近)是否存在衍射峰。 在表2的最右列,双圆圈⊚表示强度为R的80%以上的衍射峰。 2 铁 14 在d = 0.298nm附近(即在2θ= 30.0度附近)观察到代表(410)面(2θ= 42.2度)的B型结晶相。 单圆圈◯表示在d = 0.298nm附近(即在2θ= 30.0度附近)观察到强度为该衍射峰的10%以上(2θ= 42.2度)的衍射峰。 空心三角形Δ表示在d = 0.298nm附近(即,在2θ= 30.0度附近)观察到强度为该衍射峰的5%至10%(2θ= 42.2度)的衍射峰。  。 十字×表示在d = 0.298nm附近未观察到衍射峰。 \n\n [0077] 从表2可以看出,当在d = 0.298nm附近观察到具有足够强度的衍射峰时,获得了优异的磁性能。 另一方面,如果由母合金E的熔体制成完全不添加碳的快速凝固的合金,则基本上不产生第二化合物相,并且即使在d = 0.298nm附近也未观察到其衍射峰。 之后,将合金在600℃加热并结晶。 \n\n [0078] 另外,即使由具有适当组成的母合金G制成快速凝固的合金,在d = 0.298nm附近也未观察到第二化合物相的衍射峰,并且当在室温下进行结晶化热处理时磁性能差。  500℃以下或800℃以上的温度。 \n\n [0079] 无花果 图4和图5是分别示出已经进行了结晶热处理的快速固化的薄带的XRD图的图。 具体而言, 图4涉及作为比较例的22号样品,其中使用了不包含添加剂碳(C)的母合金E,而图4示出了作为比较例的样品E。 图5涉及作为本发明示例的8号样品,其中使用了包括适量碳的母合金G。 \n\n [0080] 从图可以看出,  5,除了代表R的峰 2 铁 14 在具有硬磁性的B型化合物中,在8号样品中在平面间距d为0.295nm至0.300nm(即,d = 0.298nm附近:2θ= 30.0度)的位置清楚地观察到另一个衍射峰。 在图 另一方面,在图4中,在平面间距d = 0.298nm附近(即在2θ= 30.0度附近)没有观察到衍射峰。 \n\n [0081] 在图 如图5所示,第二化合物相的衍射峰的强度比(即,在2θ= 30.0度附近)与R的强度比 2 铁 14 表示(410)面(即2θ= 42.2度)的B型结晶相为100%以上。 \n\n [0082] 接下来,将参照图2至图6描述碳(C)比X与硼(B)和碳(C)之和之间的关系以及磁性能。  6至9。 \n\n [0083] 图。 图6示出了由式Nd表示的R-T-B-C基稀土合金磁性材料的磁性能。 30.0 铁 69.0 乙 (1.0-X) C X  碳比X在0〜0.75的范围内变化。 在这种情况下,将磁性材料在873 K下热处理300秒。 在图 在图6中,横坐标表示外部磁场H ex  单位为MA / n,纵轴为特斯拉(T)的磁化强度J。 从图可以看出, 如图6所示,当X = 0.25时,获得了最佳的磁性,并且比根本没有添加碳的磁性材料更好。 \n\n [0084] 图。 图7是类似于图6的曲线图。 图6示出了由式Nd表示的R-T-B-C系稀土合金磁性材料的磁特性。 30.0 铁 59.0 有限公司 10.0 乙 (1.0-X) C X  碳比X在0〜0.75的范围内变化。 在这种情况下,磁性材料也在873 K热处理300秒。 从图可以看出, 如图7所示,在0.25至0.75的X范围内获得了足够好的磁性能。 \n\n [0085] 图。 图8示出了由式Nd表示的R-T-B-C基稀土合金磁性材料的磁性能。 30.0 铁 69.0 乙 0.75 C 0.25  热处理温度T在873K〜1,073K(即600℃〜800℃)的范围内变化。 从图可以看出, 如图8所示,当热处理温度为1,073K(或800℃)时,磁性能劣化。 \n\n [0086] 图。 图9表示以Nd为代表的R-T-B-C系稀土合金磁性材料的峰强度比。 30.0 铁 69.0 乙 0.75 C 0.25  或钕 30.0 铁 69.0 乙 0.50 C 0.50  热处理温度T在宽范围内变化。 从图可以看出,  9,比例(I 2.98 /一世 2.14 )的衍射峰强度I 2.98  第二化合物相(约2θ= 30.0度)对衍射峰强度I的影响 2.14  R的 2 铁 14 当热处理温度为约973K(或700℃)时,代表(410)面的B型结晶相最高。 \n\n 工业适用性 \n\n [0087] 根据本发明,提供了一种R-T-B-C系稀土合金磁性材料,其包含碳(C)但显示出优异的磁性。 因此,不管收集的稀土磁体是烧结磁体还是粘结磁体,都可以将收集的磁体再循环为磁性材料(细条或粉末形式)。 结果,可以更有效地利用宝贵的自然资源,并且可以显着降低磁体的制造成本。 \n\n [0088] 另外,添加剂碳降低稀土磁体的氧化反应性。 因此,磁体性能不会由于在制造过程中的发热或点火而劣化,或者不会危害制造过程的安全性。 此外,即使不在磁体表面上设置任何特殊的保护涂层以改善其耐候性,也可以使磁体随时间的劣化最小化。');
INSERT INTO `os_patent_instruction_text` VALUES (12917, 22746, 'TECHNICAL FIELD\n\n[0001]The present invention relates to a raw alloy for a permanent magnet for use in various types of motors, meters, sensors and loudspeakers, for example, and a method of making such a raw alloy. More particularly, the present invention relates to a raw alloy for a nanocomposite-type permanent magnet to be prepared by a strip casting process and a method of making such an alloy.\n\nBACKGROUND ART\n\n[0002]A nanocomposite-type permanent magnet, having a structure in which a hard magnetic phase such as R2Fe14B and soft magnetic phases such as Fe3B and α-Fe (i.e., high-magnetization ferromagnetic phases) are magnetically coupled together, is now under development as an R—Fe—B based magnet. A powder of a nanocomposite-type permanent magnet is compacted into a predetermined shape with a resin material, thereby forming an isotropic bonded magnet.\n\n[0003]In producing a nanocomposite magnet, a rapidly solidified alloy, having either an amorphous structure or at least a structure consisting mostly of an amorphous phase, is often used as a start material thereof. When subjected to a heat treatment, this rapidly solidified alloy is crystallized and eventually becomes a magnetic material having a nanocrystalline structure with an average crystal grain size of about 10−9 m to about 10−6 m.\n\n[0004]The structure of the heated and crystallized magnetic alloy heavily depends on the structure of the rapidly solidified alloy that is yet to be heated and crystallized. For that reason, to obtain a nanocomposite magnet having excellent magnetic properties, it is important how to define the conditions of rapidly cooling and solidifying a melt of the raw alloy because those conditions should determine the specific structure (e.g., the percentage of amorphous phase) of the resultant rapidly solidified alloy.\n\n[0005]A rapid cooling process to be performed with a machine such as that shown in FIG. 1 is known as a conventional method of preparing such a rapidly solidified alloy including a greater volume percentage of amorphous phase. In this process, a molten alloy is ejected out of a nozzle, having an orifice at the bottom, toward a rotating roller made of copper, for example, and rapidly cooled by the roller, thereby obtaining a thin-strip amorphized solidified alloy.\n\n[0006]Methods of this type have been researched and reported by universities and organizations that are engaged in the study of magnetic materials. However, a machine for use in those researches or reports is modeled just for experimental purposes so as to melt several tens to several hundreds grams of alloy inside of a nozzle and eject it out of the nozzle. That is to say, a machine having that low processing rate cannot mass-produce a raw alloy for a nanocomposite magnet.\n\n[0007]Thus, a method of achieving increased processing rates is described in Japanese Laid-Open Publications No. 2-179803, No. 2-247305, No. 2-247306, No. 2-247307, No. 2-247308, No. 2-247309 and No. 2-247310, for example.\n\n[0008]In this method, a molten alloy, which has been melted in a melting crucible, is poured into a container having an ejecting nozzle at the bottom, and then ejected out of the nozzle by applying a predetermined pressure onto the melt in the container (this method will be referred to herein as a “jet casting process”). By ejecting the melt through the nozzle while applying a pressure thereto in this manner, a stream of the melt (or a melt flow) having a relatively high flow rate can be ejected substantially perpendicularly toward around the top of the rotating roller. The ejected melt forms a puddle (i.e., a melt puddle) on the surface of the rotating roller. A portion of this puddle, which is in contact with the roller, is rapidly cooled and solidified, thereby forming a thin-strip rapidly solidified alloy.\n\n[0009]In the jet casting process described above, the molten alloy and the rotating roller have just a short contact length. Accordingly, the melt cannot be rapidly cooled and solidified completely on the rotating roller, and the alloy at a high temperature (e.g., 700° C. to 900° C.) is still cooled and solidified even after having peeled off the rotating roller and while traveling in the air. In the jet casting process, the cooling process is carried out in this manner, thereby amorphizing any of various types of alloys.\n\n[0010]In the jet casting process, however, if the processing rate is increased to an industrially mass-producible level (e.g., about 1.5 kg/min or more), the ejecting nozzle is worn out significantly with an increase in the feeding rate of the melt (or the melt ejecting velocity). As a result, the melt feeding rate is subject to change during the process, and the constant rapid cooling state cannot be maintained anymore. In addition, a huge nozzle cost should be needed in that case. Furthermore, since the melt ejecting velocity is limited by the nozzle diameter, it is difficult to increase the processing rate as intended.\n\n[0011]Also, in the jet casting process, the melt might be solidified at the nozzle and possibly clog the nozzle up. Accordingly, a mechanism for keeping the container with the nozzle at a predetermined temperature is needed. Furthermore, to keep the melt ejecting rate constant, a mechanism for controlling the pressure on the surface of the melt inside the container and the pressure on the outlet of the nozzle is also needed. As a result, the initial equipment cost and equipment operation cost are both expensive.\n\n[0012]Furthermore, to constantly achieve an appropriate cooling rate for an amorphous alloy by the jet casting process, the melt ejecting velocity needs to be relatively low (e.g., 1.5 kg/min or less). Thus, the jet casting process is not so productive. However, if the melt ejecting velocity is too high in the jet casting process, then no puddle might be formed on the surface of the roller but the melt might splash off, thus making the melt cooling rate inconstant.\n\n[0013]Also, in the jet casting process, a rapidly solidified alloy including a greater volume percentage of amorphous phase is obtained by ejecting a small amount of melt onto a roller that rotates at a relatively high velocity (e.g., at a peripheral velocity of 20 m/s or more). Thus, the resultant thin-strip rapidly solidified alloy typically has a thickness of 50 μm or less. It is difficult to collect a thin-strip alloy having such a small thickness so efficiently as to increase the tap density thereof sufficiently.\n\n[0014]On the other hand, a strip casting process is also known as another method of preparing a rapidly solidified alloy. In the strip casting process, a molten alloy is supplied from a melting crucible onto a shoot (or tundish) and then brought into contact with a chill roller, thereby making a rapidly solidified alloy. The shoot is a melt guiding means that controls the flow rate of the melt by temporarily reserving the melt thereon and rectifies the melt flow, thereby feeding the melt onto the chill roller constantly and continuously. The melt, which has come into contact with the outer circumference of the chill roller, moves along the circumference of the roller so as to be dragged by the rotating chill roller and cooled in the meantime.\n\n[0015]In the strip casting process, the melt and the outer circumference of the roller have a relatively long contact length in the circumferential direction of the roller. Thus, the melt can be cooled and solidified substantially completely on the roller.\n\n[0016]As described above, the strip casting process uses no ejecting nozzle unlike the jet casting process but feeds the molten alloy continuously onto the rotating roller by way of the shoot. Thus, the strip casting process is effective for mass production and can reduce the manufacturing cost.\n\n[0017]In the strip casting process, however, a large amount of molten alloy is fed onto the roller and the rapid cooling rate tends to be low. For these reasons, the strip casting process is not effective for preparing an amorphized solidified alloy. If the rapid cooling rate is low, then an alloy including a smaller volume percentage of amorphous phase (i.e., including a greater volume percentage of crystalline structure) is formed easily. If there is a greater volume percentage of crystalline structure in the alloy structure, the crystalline structure will grow excessively from the crystalline nuclei in the subsequent heat treatment for crystallization. As a result, a nanocomposite magnet having excellent magnetic properties cannot be obtained.\n\n[0018]For these reasons, the strip casting process is often used to make completely crystallized flakes of a metal (see Japanese Laid-Open Publication No. 8-229641, for example). A rapidly solidified alloy obtained in this manner is normally used as a raw alloy for a sintered magnet including an R2Fe4B phase as its main phase, and cannot be used as a raw alloy for a nanocomposite magnet.\n\n[0019]As described above, it has been difficult to make a raw alloy, including a greater volume percentage of amorphous structure, for a nanocomposite magnet highly productively and at a reduced cost.\n\n[0020]In order to overcome the problems described above, an object of the present invention is to provide a raw alloy for a nanocomposite-type permanent magnet having excellent magnetic properties at a reduced cost.\n\nDISCLOSURE OF INVENTION\n\n[0021]An inventive method of making a raw alloy for a magnet includes the steps of: preparing a molten alloy represented by Fe100-x-y-zRxQyMz, (where R is at least one element selected from the group consisting of Pr, Nd, Dy and Tb; Q is B and/or C; M is at least one element selected from the group consisting of Co, Al, Si, Ti, V, Cr, Mn, Ni, Cu, Ga, Zr, Nb, Mo, Ag, Pt, Au and Pb; and x, y and z satisfy 1 at %≦x[0022]In a preferred embodiment, the molten alloy is fed onto the chill roller at a feeding rate of at least 3 kg/min.\n\n[0023]In another preferred embodiment, the molten alloy is brought into contact with the chill roller by way of a shoot, which can control the flow of at least a portion of the molten alloy toward the chill roller. The shoot includes a plurality of melt drains, each of which is located in the vicinity of the chill roller and which has a predetermined teeming width as measured in the axial direction of the chill roller. Multiple thin-strip alloys are made from the molten alloy that has passed through the melt drains and contacted with the chill roller.\n\n[0024]In another preferred embodiment, the predetermined contact width is 0.5 cm to 10.0 cm.\n\n[0025]In another preferred embodiment, the thin-strip alloy has a metal structure that includes at least about 60 volume percent of amorphous structure.\n\n[0026]In another preferred embodiment, the method further includes the step of continuously crushing the thin-strip alloy and collecting the crushed alloy such that a tap density thereof becomes at least equal to 1 g/cm3.\n\n[0027]A magnet raw alloy according to the present invention is prepared by the method according to any of the preferred embodiments of the present invention described above. The raw alloy has a coercivity HcJ of at most 10 kA/m before being heated and crystallized.\n\n[0028]In a preferred embodiment, the raw alloy has a thickness of 70 μm to 250 μm.\n\n[0029]An inventive method of evaluating a raw alloy for a magnet includes the steps of: measuring the coercivity of a solidified alloy that has been obtained by rapidly cooling a melt of a magnetic alloy; and estimating the percentage of an amorphous phase to the solidified alloy based on the coercivity measured.\n\n[0030]Another inventive method of evaluating a raw alloy for a magnet includes the steps of: measuring the quantity of heat that has been generated by a solidified alloy, which was obtained by rapidly cooling a melt of a magnetic alloy, during its crystallization; and estimating the percentage of an amorphous phase to the solidified alloy based on the heat quantity measured.\n\n[0031]An inventive method of making a raw alloy for a magnet includes the steps of: estimating the percentage of an amorphous phase to the solidified alloy by one of the evaluating methods of the present invention; and heating and crystallizing the solidified alloy that has been prepared under such a condition that the estimated percentage of the amorphous phase becomes at least equal to a predetermined percentage.\n\nBRIEF DESCRIPTION OF DRAWINGS\n\n[0032]FIG. 1 is a side view illustrating a nozzle and a rotating roller for use in a conventional jet casting process.\n\n[0033]FIG. 2 is a cross-sectional view illustrating the overall configuration of a machine for use to make a rapidly solidified alloy by a strip casting process according to an embodiment of the present invention.\n\n[0034]FIG. 3 is a plan view showing the chill roller and the shoot of the machine shown in FIG. 2.\n\n[0035]FIG. 4 shows the thermal analysis curve of a pre-heat-treated sample powder prepared as an example.\n\n[0036]FIG. 5 shows the magnetic hysteresis loop of the pre-heat-treated sample powder prepared as the example.\n\n[0037]FIG. 6 shows a portion of FIG. 5 around the origin thereof on a larger scale.\n\nBEST MODE FOR CARRYING OUT THE INVENTION\n\n[0038]To obtain a raw alloy for a nanocomposite-type permanent magnet, which can exhibit excellent magnetic properties when subjected to heat treatment, at a reduced manufacturing cost, the present inventors carried out an extensive research on the method of preparing a rapidly solidified alloy including a greater volume percentage of amorphous phase. If the conventional jet casting process is adopted, a rapidly solidified alloy including a greater volume percentage of amorphous phase, which can be used effectively as a raw alloy for a nanocomposite-type permanent magnet, can be obtained. However, to achieve a processing rate at a mass-producible level by that method, various problems must be overcome as described above. Thus, the present inventors intentionally select a strip casting process although it would be more difficult to form the amorphous structure by the strip casting process than by the jet casting process, and carried out an extensive research on the method of preparing a solidified alloy, including a greater volume percentage of amorphous phase, by the strip casting process.\n\n[0039]As a result, the present inventors discovered that when the raw alloy had a composition represented by the general formula: Fe100-x-y-zRxQyMz (where R is at least one element selected from the group consisting of Pr, Nd, Dy and Tb; Q is B and/or C; M is at least one element selected from the group consisting of Co, Al, Si, Ti, V, Cr, Mn, Ni, Cu, Ga, Zr, Nb, Mo, Ag, Pt, Au and Pb; and x, y and z satisfy 1 at %≦x[0040]The present inventors further looked for specific preferred conditions for the rapid cooling process to increase the percentage of the amorphous phase in a situation where the molten alloy having the particular composition is rapidly cooled and solidified by the strip casting process.\n\n[0041]As a result, the present inventors discovered that where the molten alloy has the particular composition described above, a raw alloy for a permanent magnet powder, including at least 60 vol % of amorphous structure, can be obtained by a strip casting process in which the molten alloy is continuously fed onto a chill roller, rotating at a peripheral velocity of 3 m/s to less than 20 m/s, at a feeding rate per unit contact width of 0.2 kg/min/cm to 5.2 kg/min/cm. In addition, according to this method, the rapidly solidified alloy can also be prepared at a melt processing rate of 3 kg/min or more.\n\n[0042]In the present invention, the preferred melt feeding rate range is defined by the feeding rates per unit contact width as described above. The reason is as follows. In the strip casting process, the melt contacts with the chill roller so as to have a predetermined contact width in the axial direction of the chill roller. However, the cooling condition of the melt heavily depends on the melt feeding rate per unit contact width. It should be noted that the feeding rate per unit contact width is typically obtained by dividing the feeding rate (unit: kg/min) of the melt that is supplied onto a shoot as a melt guide by the width (unit: cm) of the drain of the shoot (i.e., the contact width of the melt). If the shoot has multiple drains, then the feeding rate per unit contact width is obtained by dividing the feeding rate of the melt being supplied onto the shoot by the sum of the widths of the respective drains.\n\n[0043]If the melt feeding rate per unit contact width is too high, then the melt is quenched by the chill roller at a decreased rate. As a result, a rapidly solidified alloy, which has not been amorphized sufficiently but consists mostly of crystallized structure, is made unintentionally. That is to say, a raw alloy suitably applicable to producing a nanocomposite magnet cannot be obtained. On the other hand, if the melt feeding rate is too low, then it would be difficult to bring the melt into contact with the chill roller appropriately by the strip casting process. Thus, according to the present invention, the feeding rate per unit contact width is defined to be 0.2 kg/min/cm to 5.2 kg/min/cm.\n\n[0044]Also, if the melt is brought into contact with the chill roller at three contact portions each having a contact width of about 2 cm as will be described later, the feeding rate is preferably defined to be at least about 0.5 kg/min/cm. Then, a processing rate of about 3 kg/min or more is achievable.\n\n[0045]As described above, the melt is fed at a feeding rate falling within the prescribed range onto the chill roller that rotates at a peripheral velocity falling within the particular range. In this manner, a rapidly solidified alloy, including a greater volume percentage of amorphous phase, can be manufactured with high productivity even by the strip casting process. The strip casting process uses no nozzle, which would otherwise increase the manufacturing cost significantly as in a jet casting process, for example. Accordingly, no nozzle cost is required and the problems caused by stoppage of the manufacturing process due to nozzle clogging are eliminated.\n\n[0046]Thereafter, the resultant rapidly solidified alloy is subjected to a heat treatment for crystallization (which will be sometimes referred to herein as a “heating/crystallizing process”) at a temperature of about 550° C. to about 750° C. In this manner, a nanocomposite-type permanent magnet, which includes at least 90% of crystalline structure where soft magnetic phases such as α-Fe phase and/or Fe3B phase and a compound having an R2Fe14B crystalline structure coexist, has an average crystal grain size of 10 nm to 50 nm, and exhibits excellent magnetic properties, can be obtained.\n\n[0047]Hereinafter, specific embodiments of the present invention will be described with reference to the accompanying drawings.\n\n[0048]FIG. 2 illustrates a melt quenching machine 1 for use to prepare a rapidly solidified alloy by a strip casting process according to a preferred embodiment of the present invention. The melt quenching machine 1 includes: a main chamber 10 in which either a vacuum or a reduced-pressure inert atmosphere can be created; and a sub-chamber 30, which is connected to the main chamber 10 by way of an openable/closable shutter 28.\n\n[0049]In the main chamber 10, provide are a melting crucible 12 for melting a raw alloy therein, a chill roller 14 for rapidly cooling and solidifying the molten alloy 3 that has been fed from the melting crucible 12, a shoot (or tundish) 16 as a melt guiding means for guiding the molten alloy 3 from the melting crucible 12 onto the chill roller 14, and a collecting means 20 for collecting a thin-strip alloy that has been solidified by, and peeled off, the chill roller 14.\n\n[0050]The melting crucible 12 can feed the melt 3, prepared by melting the raw alloy, onto the shoot 16 at a substantially constant feeding rate. This feeding rate is arbitrarily adjustable by controlling the operation of tilting the melting crucible 12, for example.\n\n[0051]The outer circumference of the chill roller 14 is made of a good thermal conductor (e.g., copper). The roller 14 may have a diameter of 30 cm to 100 cm and a width of 15 cm to 100 cm. The roller 14 can be rotated at a predetermined rotational velocity by a motor (not shown). By controlling this rotational velocity, the peripheral velocity of the chill roller 14 is arbitrarily adjustable. The cooling rate achieved by this melt quenching machine 1 is controllable within a range of about 102 K/sec to about 2×104 K/sec by selecting an appropriate rotational velocity for the chill roller 14, for example.\n\n[0052]The end 16a of the shoot 16 is located at such a position as defining an angle θ with a line that connects together the top of the chill roller 14 and the center of the roller. The melt 3, which has been poured onto the shoot 16, is fed onto the chill roller 14 due to its own weight by way of the end 16a. \n\n[0053]The shoot 16, made of a ceramic, for example, can rectify the flow of the melt 3 by decreasing the flow velocity of the melt 3 to such a degree as to temporarily reserve the flow of the melt 3 that is being continuously fed from the melting crucible 12 at a predetermined flow rate. This rectification effect can be further increased with a dam plate for selectively damming back the surface flow of the melt 3 that has been poured onto the shoot 16.\n\n[0054]By using this shoot 16, the melt 3 can be teemed so as to have a substantially uniform thickness along a certain width in the length direction (or the axial direction) of the chill roller 14. In addition, the shoot 16 can also adjust the temperature of the melt 3 that is about to reach the chill roller 14. The temperature of the melt 3 on the shoot 16 is preferably higher than the liquidus temperature thereof by about 100 K or more. This is because if the temperature of the melt 3 is too low, then initial crystals, which will affect the properties of the resultant rapidly solidified alloy, might locally nucleate and remain in the rapidly solidified alloy. The temperature of the melt on the shoot 16 is controllable by adjusting the temperature of the melt that is being teemed from the melting crucible 12 toward the shoot 16 or the heat capacity of the shoot 16 itself, for example. If necessary, a shoot heater (not shown) may be provided specially for this purpose.\n\n[0055]FIG. 3 shows the shoot 16 of this embodiment. The shoot 16 of this embodiment includes multiple drains 16b, which are spaced apart from each other by a predetermined gap W2, at the end 16a thereof that is disposed so as to face the outer circumference of the chill roller 14. The width W1 (i.e., the teeming width) of these drains 16b is preferably defined to be 0.5 cm to 10.0 cm, more preferably 1.5 cm to 4.0 cm. In this embodiment, the teeming width W1 is defined at 2 cm. The melt 3, which has been poured onto the shoot 16, then contacts with the chill roller 14 while substantially maintaining the same width W1 in the axial direction A of the chill roller 14. After having contacted with the chill roller 14 at the teeming width W1, the melt 3 moves on the circumference of the roller as the chill roller 14 rotates (i.e., is brought upward by the chill roller 14). During this movement, the melt 3 is cooled by the chill roller 14. It should be noted that to prevent the melt from leaking through the gap, the distance between the end 16a of the shoot 16 and the chill roller 14 is preferably defined to be 3 mm or less.\n\n[0056]The gap W2 between adjacent drains is preferably defined to be 1 cm to 10 cm. If the melt contact region (or melt cooling region) between the melt and the outer circumference of the chill roller 14 is divided into multiple portions in this manner, then the melt that has been teemed from each drain 16b can be cooled effectively. As a result, even if the melt is poured onto the shoot 16 at an increased feeding rate, the desired cooling rate can also be achieved, and a rapidly solidified alloy, including at least 60 vol % of amorphous structure, can also be obtained. Consequently, the processing rate can be increased and the rapidly solidified alloy for a nanocomposite magnet can be mass-produced.\n\n[0057]It should be noted that the shoot 16 does not have to have the configuration described above. Alternatively, the shoot 16 may have only a single drain or a greater teeming width.\n\n[0058]Referring back to FIG. 2, the molten alloy 3 that has been solidified on the outer circumference of the chill roller 14 then leaves the chill roller 14 as a thin-strip solidified alloy 3a. The solidified alloy 3a peeled is crushed by, and collected in, the collector 20.\n\n[0059]The collector 20 includes a rotary blade 22 for use to crush the thin-strip solidified alloy 3a. The rotary blade includes multiple cutting edges that are made of a stainless steel, for example, and is rotated at a velocity of about 500 rpm to about 1,000 rpm by a motor (not shown). The thin-strip solidified alloy 3a, which has been peeled off the chill roller 14, is guided by a guide member 24 onto the rotary blade 22. The solidified alloy 3a to be prepared by the strip casting process of this embodiment is relatively thick (e.g., 70 μm to 250 μm). Accordingly, compared to a relatively thin solidified alloy obtained by the jet casting process, the solidified alloy 3a can be crushed by the rotary blade 22 more easily.\n\n[0060]Also, since the thin-strip solidified alloy 3a is relatively thick as described above, the solidified alloy 5 that has been crushed by the rotary blade 22 has an aspect ratio that is even closer to one. Accordingly, the crushed solidified alloy 5 can be stored in the collector box 26 at a high tap density. The solidified alloy 5 is preferably collected at a tap density of at least 1 g/cm3. Then, the collection work can be performed more efficiently.\n\n[0061]When the crushed solidified alloy 5 stored in the collector box 26 reaches a predetermined amount, the collector box 26 is transported by some transporting means (not shown) such as a belt conveyer to the sub-chamber 30. In this case, before the shutter 28 is opened, a vacuum or a reduced-pressure inert atmosphere is preferably created in the sub-chamber 30 as well as in the main chamber 10. Then, the vacuum or reduced-pressure state inside the main chamber 10 can be maintained. After the collector box 26 has been brought out from the main chamber 10, the shutter 28 is closed to keep the main chamber 10 airtight.\n\n[0062]Thereafter, the collector box 26 is covered with a lid 32 by a mechanism (not shown) inside the sub-chamber 30. The crushed alloy 5 that has been stored airtight inside the collector box 26 in this manner is taken out by opening an openable/closable shutter 34.\n\n[0063]As described above, the strip casting process does not use any nozzle unlike the jet casting process. That is to say, the strip casting process does not experience any of various problems associated with the jet casting process. Specifically, in the strip casting process, the melt ejecting speed is not limited by the diameter of the nozzle or the melt is not solidified at the nozzle, either, to clog the nozzle up with the unintentionally solidified alloy. Thus, the strip casting process is very effective for mass production. Furthermore, no nozzle heating equipment or no melt head pressure control mechanism is needed. As a result, the initial equipment cost and equipment operation cost are greatly reduced advantageously.\n\n[0064]Also, in the jet casting process, the nozzle is not recyclable and therefore should be disposed of once used even though it usually needs a high processing cost to form the nozzle. In contrast, the strip casting process allows a repeated use of the shoot, thus requiring a much lower equipment operation cost.\n\n[0065]Furthermore, in the strip casting process of the present invention, the roller can be rotated at a relatively low velocity and the weight of the molten alloy teemed can be increased as compared to the jet casting process. Thus, the resultant thin strip can be thickened and can be collected easily.\n\nReasons Why this Composition is Preferred\n\n[0066]The rare earth element R is an element indispensable for R2Fe14B, which is a hard magnetic phase needed to exhibit permanent magnet properties. In the present invention, R includes at least one element selected from the group consisting of Pr, Nd, Dy and Tb. However, to control the amorphous formability and the crystallization temperature, any other rare earth element may be substituted for a portion of R. The mole fraction of R should not be lower than 1 at % because the coercivity could not be increased so effectively at an R mole fraction of less than 1 at %. However, if the R mole fraction is 6 at % or more, then no hard magnetic R2Fe14B phase will be produced and the coercivity will decrease significantly. In view of these considerations, the mole fraction x of R preferably satisfies 1≦x[0067]Q is B (boron) and/or C (carbon). B is an indispensable element for an iron-based boride such as a soft magnetic Fe3B phase and the hard magnetic R2Fe14B phase, which are main phases of a nanocomposite-type permanent magnet material. If the mole fraction y of B is out of 15–30 at % range, then the permanent magnet properties are not achievable. For that reason, the B mole fraction y preferably satisfies 15≦y≦30. As used herein, “Fe3B” includes Fe3.5B, which is almost non-distinguishable from Fe3B.\n\n[0068]Furthermore, if B is lower than 15 at %, then the amorphous formability of the melt would decrease significantly. In that case, if a rapidly solidified alloy is prepared by a strip casting process as in the present invention, the amorphous phase will not be formed sufficiently. Even when such a rapidly solidified alloy is heated and crystallized, no metal structure having good magnet properties can be obtained. It should be noted that C may be substituted for up to 50% of B because the magnetic properties or metal structure would not be affected by the substitution.\n\n[0069]The balance of the raw alloy, other than the elements described above, may be Fe alone, a portion of which may be replaced with Co, though. Then, the loop squareness of the demagnetization curve will improve and the maximum energy product (BH)max will increase. Furthermore, a portion of Fe may also be replaced with at least one element that is selected from the group consisting of Al, Si, V, Cr, Mn, Ni, Cu, Ga, Zr, Nb, Mo, Ag, Ta, W, Pt, Au and Pb because permanent magnet properties are also improvable then. However, if the total mole fraction z of the at least one substituent to be selected from the group consisting of Co, Al, Si, V, Cr, Mn, Ni, Cu, Ga, Zr, Nb, Mo, Ag, Ta, W, Pt, Au and Pb, contributing to achieving these effects, exceeds 7 at %, then the magnetization would decrease. Thus, a preferred z range is 0≦z≦7 at %. Also, since more remarkable effects are achieved when z is 0.5 at % or more, a more preferred z range is 0.5≦z≦7 at %.\n\nReasons Why these Manufacturing Conditions are Preferred\n\n[0070]In the present invention, a molten alloy having the particular composition described above is rapidly cooled and solidified by a strip casting process to be carried out with the melt quenching machine 1 shown in FIG. 2, thereby obtaining a thin-strip alloy. The molten alloy is fed onto a chill roller, which is rotating at a peripheral velocity of 3 m/s to less than 20 m/s in a vacuum or a reduced-pressure inert gas atmosphere, at a feeding rate per unit contact width of 0.2 kg/min/cm to 5.2 kg/min/cm. In this manner, a rapidly solidified alloy, including at least 60 vol % of amorphous structure, can be prepared. By subjecting the raw alloy including the amorphous structure at such a high percentage to a heating/crystallizing process, a nanocomposite-type magnet, exhibiting good magnetic properties, can be obtained.\n\n[0071]The following is the reasons why the chill roller preferably has a peripheral velocity of 3 m/s to less than 20 m/s as described above. Specifically, if the peripheral velocity of the roller is less than 3 m/s, then the cooling ability would be too low to obtain a rapidly solidified alloy including at least 60 vol % of amorphous structure. On the other hand, if the peripheral velocity of the roller is 20 m/s or more, then it would be difficult to move the melt upward on the roller. In that case, the cooled alloy would scatter as thin flakes, thus making it hard to collect them. The best peri', '技术领域 \n\n [0001] 本发明涉及一种例如在各种类型的电动机,仪表,传感器和扬声器中使用的用于永磁体的原材料合金,以及制造这种原材料合金的方法。 更具体地,本发明涉及一种通过带材铸造法制备的用于纳米复合型永磁体的原料合金及其制造方法。 \n\n 背景技术 \n\n [0002] 纳米复合型永磁体,具有其中诸如R的硬磁相的结构 2 铁 14 硼和软磁性相,如铁 3 B和α-Fe(即高磁化铁磁性相)磁性耦合在一起,目前正在发展为基于R-Fe-B的磁体。 用树脂材料将纳米复合型永磁体的粉末压制成预定形状,从而形成各向同性粘结磁体。 \n\n [0003] 在生产纳米复合磁体时,通常将具有非晶态结构或至少具有主要由非晶态相组成的结构的快速凝固的合金用作其起始材料。 当进行热处理时,该快速凝固的合金结晶并最终成为具有纳米晶体结构的磁性材料,其平均晶粒尺寸约为10 −9 米至约10  -6 米 \n\n [0004] 加热和结晶的磁性合金的结构在很大程度上取决于尚未被加热和结晶的快速凝固的合金的结构。 因此,为了获得具有优异磁性能的纳米复合磁体,重要的是确定快速冷却和凝固原料合金熔体的条件,因为这些条件应确定特定的结构(例如,非晶相的百分比) 所得快速凝固合金的含量。 \n\n [0005] 用诸如图1中所示的机器执行的快速冷却过程被执行。 已知一种常规的制备这种快速凝固的合金的方法,该合金包括较大体积百分比的非晶相。 在该过程中,熔融合金从底部具有孔的喷嘴朝着例如由铜制成的旋转辊喷出,并由该辊快速冷却,从而获得薄带非晶化的凝固合金。 \n\n [0006] 从事磁性材料研究的大学和组织已经研究和报道了这种类型的方法。 但是,用于这些研究或报告的机器只是为了实验目的而建模,以便在喷嘴内部熔化数十至数百克的合金并将其喷出喷嘴。 也就是说,具有低加工速度的机器不能大量生产用于纳米复合磁体的原料合金。 \n\n [0007] 因此,在日本特开平2-179803号,第2-247305号,第2-247306号,第2-247307号,第2-247308号,第2号中描述了一种实现提高处理速度的方法。  -247309和No.2-247310。 \n\n [0008] 在这种方法中,将已在熔融坩埚中熔化的熔融合金倒入底部具有喷嘴的容器中,然后通过在容器中的熔体上施加预定压力将其从喷嘴中喷出(此方法 该方法在本文中将被称为“喷射铸造工艺”)。 通过以这种方式向喷嘴施加压力的同时通过喷嘴喷射熔体,具有相对较高流速的熔体流(或熔体流)可以基本上垂直地朝向旋转辊的顶部周围喷射。 排出的熔体在旋转辊的表面上形成熔池(即熔池)。 与辊接触的该熔池的一部分被快速冷却并固化,从而形成薄带快速固化的合金。 \n\n [0009] 在上述的喷射铸造工艺中,熔融合金和旋转辊的接触长度短。 因此,熔体不能在旋转辊上快速冷却并完全固化,并且即使从旋转辊上剥离后,高温(例如700℃至900℃)的合金仍然冷却并固化。 在空中旅行时。 在喷射铸造工艺中,以这种方式进行冷却工艺,从而使各种合金中的任何一种非晶化。 \n\n [0010] 然而,在喷射铸造过程中,如果将加工速率提高到工业上可批量生产的水平(例如,约1.5 kg / min或更高),则随着熔体进料速率的增加,喷嘴将严重磨损。  (或熔体喷射速度)。 结果,在该过程中熔体进料速率会发生变化,并且不能再保持恒定的快速冷却状态。 另外,在这种情况下,需要大量的喷嘴成本。 此外,由于熔体的喷射速度受喷嘴直径的限制,因此难以如所期望的那样提高处理速度。 \n\n [0011] 同样,在喷射铸造过程中,熔体可能在喷嘴处凝固,并可能堵塞喷嘴。 因此,需要一种用于将带有喷嘴的容器保持在预定温度的机构。 此外,为了保持熔体喷射速率恒定,还需要用于控制容器内部熔体表面上的压力和喷嘴出口上的压力的机构。 结果,初始设备成本和设备运行成本均很昂贵。 \n\n [0012] 此外,为了通过喷射铸造工艺恒定地获得用于非晶态合金的合适的冷却速率,熔体喷射速度需要相对较低(例如1.5kg / min或更小)。 因此,喷射铸造工艺不是很有效。 但是,如果在喷射铸造过程中熔体的喷射速度太高,则在辊的表面上可能不会形成熔池,但是熔体可能会溅出,从而使熔体冷却速率不稳定。 \n\n [0013] 另外,在喷射铸造工艺中,通过将少量的熔体喷射到以相对较高的速度(例如,以20m / m的圆周速度旋转)的辊上来获得包括较大体积百分比的非晶相的快速凝固的合金。  s或更多)。 因此,所得的薄带快速凝固合金通常具有50μm或更小的厚度。 难以有效地收集具有如此小的厚度的薄带合金以充分增加其振实密度。 \n\n [0014] 另一方面,带钢铸造法也被称为制备快速凝固合金的另一种方法。 在薄带连铸工艺中,将熔融合金从熔融坩埚供应到枝条(或中间包)上,然后与冷却辊接触,从而制得快速凝固的合金。 枝条是熔体引导装置,其通过将熔体暂时保留在其上并校正熔体流动来控制熔体的流速,从而将熔体恒定且连续地供给到冷却辊上。 与冷却辊的外周接触的熔体沿着辊的周向移动,以被旋转的冷却辊拖拉并同时被冷却。 \n\n [0015] 在带材浇铸过程中,熔融物和辊的外周在辊的圆周方向上具有相对长的接触长度。 因此,熔体可以在辊上基本完全冷却和固化。 \n\n [0016] 如上所述,与喷射铸造法不同,带材铸造法不使用喷嘴,而是通过射流将熔融合金连续地供给到旋转辊上。 因此,带钢铸造工艺对于批量生产有效,并且可以降低制造成本。 \n\n [0017] 然而,在带钢铸造工艺中,大量的熔融合金被供给到辊上,并且快速冷却速率趋于降低。 由于这些原因,带钢铸造工艺对于制备非晶化的凝固合金是无效的。 如果快速冷却速率低,则容易形成包含较小体积百分比的非晶相(即,包含较大体积百分比的晶体结构)的合金。 如果在合金结构中存在较大体积百分比的晶体结构,则在随后的用于结晶的热处理中,晶体结构将从晶体核过度生长。 结果,不能获得具有优异磁性能的纳米复合磁体。 \n\n [0018] 由于这些原因,带材铸造工艺通常用于制造金属的完全结晶的薄片(例如,参见日本特开平8-229641号公报)。 通常将以此方式获得的快速凝固的合金用作包含R的烧结磁体的原料合金。 2 铁 4 B相是其主要相,不能用作纳米复合磁体的原料合金。 \n\n [0019] 如上所述,难以高生产率且低成本地制造用于纳米复合磁体的包含更大体积百分比的非晶结构的原料合金。 \n\n [0020] 为了克服上述问题,本发明的目的是提供一种用于磁性复合材料的永磁体的原料合金,该原料合金具有优良的磁性能且降低了成本。 \n\n 发明内容 \n\n [0021] 制造用于磁体的原始合金的发明方法包括以下步骤:制备以Fe为代表的熔融合金  100 x yz [R x 问 y 中号 z ,(其中R是选自Pr,Nd,Dy和Tb的至少一种元素; Q是B和/或C; M是选自Co,Al,Si,Ti的至少一种元素 ; V,Cr,Mn,Ni,Cu,Ga,Zr,Nb,Mo,Ag,Pt,Au和Pb;并且x,y和z满足1 at%≤x [0022] 在一个优选的实施方案中,将熔融合金以至少3kg / min的进料速率进料到冷却辊上。 \n\n [0023] 在另一个优选的实施方式中,熔融合金通过射流与冷却辊接触,该射流可以控制熔融合金的至少一部分向冷却辊的流动。 枝条包括多个熔体排放口,每个熔体排放口位于冷却辊的附近,并且具有沿冷却辊的轴向测量的预定的发芽宽度。 多种薄带合金是由已通过熔体排出口并与冷却辊接触的熔融合金制成的。 \n\n [0024] 在另一个优选的实施方案中,预定的接触宽度是0.5cm至10.0cm。 \n\n [0025] 在另一个优选的实施方案中,薄带合金具有包括至少约60体积%的非晶态结构的金属结构。 \n\n [0026] 在另一个优选实施例中,该方法还包括以下步骤:连续地破碎薄带合金并收集破碎的合金,使得其振实密度至少等于1g / cm。 3 。 \n\n [0027] 通过上述根据本发明的任何优选实施方式的方法制备根据本发明的磁体原料合金。 原料合金的矫顽力H  J 在加热和结晶之前最大为10 kA / m。 \n\n [0028] 在优选的实施方式中,原料合金的厚度为70μm至250μm。 \n\n [0029] 本发明的评估磁体原料合金的方法包括以下步骤:测量已通过快速冷却磁性合金的熔体获得的凝固合金的矫顽力; 并且基于所测量的矫顽力来估计非晶相相对于凝固合金的百分比。 \n\n [0030] 评估磁体原料合金的另一种发明方法包括以下步骤:测量由凝固合金产生的热量,该凝固合金是通过在其结晶过程中快速冷却磁性合金的熔融液而获得的;以及 根据测得的热量估算非晶相相对于凝固合金的百分比。 \n\n [0031] 本发明的制造磁体原料合金的方法包括以下步骤:通过本发明的一种评估方法,估算非晶相相对于凝固合金的百分比; 然后,在使非晶相的推定比例至少为规定比例以上的条件下,使所制备的凝固合金加热结晶化。 \n\n 附图说明 \n\n [0032] 图。 附图说明图1是示出在传统的喷射铸造工艺中使用的喷嘴和旋转辊的侧视图。 \n\n [0033] 图。 图2是示出根据本发明的实施例的用于通过带材铸造工艺制造快速凝固的合金的机器的整体构造的剖视图。 \n\n [0034] 图。 图3是示出图2中所示的机器的冷却辊和射钉的平面图。  2。 \n\n [0035] 图。 图4显示了作为实例制备的预热处理样品粉末的热分析曲线。 \n\n [0036] 图。 图5示出了作为示例制备的预热处理样品粉末的磁滞回线。 \n\n [0037] 图。 图6示出图5的一部分。 图5围绕其原点进行了较大的缩放。 \n\n 实施本发明的最佳模式 \n\n [0038] 为了以降低的制造成本获得在热处理时表现出优异的磁性能的用于纳米复合型永磁体的原料合金,本发明人对包括以下成分的快速凝固合金的制备方法进行了广泛研究。 非晶相的体积百分比更大。 如果采用常规的喷射铸造方法,则可以获得包含较大体积百分比的非晶相的快速凝固的合金,其可以有效地用作纳米复合型永磁体的原料合金。 然而,为了通过该方法实现可大规模生产的处理速率,如上所述,必须克服各种问题。 因此,本发明人有意地选择带材铸造工艺,尽管通过带材铸造工艺比通过喷射铸造工艺更难以形成非晶结构,并且对制备凝固合金的方法进行了广泛的研究,包括 通过薄带连铸工艺获得更大体积百分比的非晶相。 \n\n [0039] 结果,本发明人发现,当原料合金具有由通式:Fe表示的组成时,  100 x yz [R x 问 y 中号 z  (其中R是选自Pr,Nd,Dy和Tb的至少一种元素; Q是B和/或C; M是选自Co,Al,Si,Ti的至少一种元素,  V,Cr,Mn,Ni,Cu,Ga,Zr,Nb,Mo,Ag,Pt,Au和Pb;且x,y和z满足1 at%≤x [0040] 本发明人进一步寻找快速冷却工艺的特定优选条件,以在具有特定组成的熔融合金通过带钢铸造工艺快速冷却并固化的情况下增加非晶相的百分比。 \n\n [0041] 结果,本发明人发现,在熔融合金具有上述特定组成的情况下,可以通过带材浇铸工艺获得永磁体粉末的原材料合金,该原材料粉末包括至少60vol%的非晶态结构,其中 将熔融合金连续进料到冷却辊上,以3 m / s的圆周速度旋转到小于20 m / s,以每单位接触宽度0.2 kg / min / cm到5.2 kg / min / cm的进料速度旋转 。 另外,根据该方法,也可以以3kg / min以上的熔融加工速度制备快速凝固的合金。 \n\n [0042] 在本发明中,优选的熔体进料速率范围由如上所述的每单位接触宽度的进料速率限定。 原因如下。 在带钢浇铸过程中,熔体与冷却辊接触,从而在冷却辊的轴向上具有预定的接触宽度。 然而,熔体的冷却条件在很大程度上取决于每单位接触宽度的熔体进料速率。 应当注意的是,每单位接触宽度的进料速度通常是通过将作为熔体引导物供给到枝条上的熔体的进料速度(单位:kg / min)除以熔体的宽度(单位:cm)而获得的。 枝条的流失(即熔体的接触宽度)。 如果枝条具有多个排水口,则通过将供应到枝条上的熔体的进料速率除以各个排水孔的宽度之和来获得每单位接触宽度的进料速率。 \n\n [0043] 如果每单位接触宽度的熔体进料速率太高,则熔体通过冷却辊以降低的速率淬火。 结果,无意中制造了没有充分非晶化但主要由结晶组织组成的快速凝固的合金。 也就是说,无法获得适用于制造纳米复合磁体的原料合金。 另一方面,如果熔体进料速率太低,则将难以通过带材浇铸工艺使熔体适当地与冷却辊接触。 因此,根据本发明,每单位接触宽度的进料速度被定义为0.2kg / min / cm至5.2kg / min / cm。 \n\n [0044] 另外,如后所述,如果使熔体在三个接触部分与冷却辊接触,每个接触部分的接触宽度为约2cm,则后述的供给速度优选为至少约0.5kg / min / cm。 然后,可获得约3kg / min或更高的处理速率。 \n\n [0045] 如上所述,将熔体以落入规定范围内的进给速率进给到以落入特定范围内的圆周速度旋转的冷却辊上。 以这种方式,即使通过带材浇铸工艺也可以以高生产率制造包括较大体积百分比的非晶相的快速凝固的合金。 带钢铸造工艺不使用喷嘴,否则将大大增加制造成本,例如在喷射铸造工艺中。 因此,不需要喷嘴成本,并且消除了由于喷嘴堵塞而导致的制造过程停止所引起的问题。 \n\n [0046] 之后,将所得的快速凝固的合金在约550℃至约750℃的温度下进行热处理以进行结晶化(有时在本文中称为“加热/结晶化处理”)。  ,一种纳米复合型永磁体,包括至少90%的晶体结构,其中软磁性相(例如α-Fe相和/或Fe) 3 B相和具有R的化合物 2 铁 14 可以获得B晶体结构并存,其平均晶粒尺寸为10nm至50nm,并且表现出优异的磁性。 \n\n [0047] 在下文中,将参照附图描述本发明的具体实施例。 \n\n [0048] 图。 图2示出了熔体淬火机 1  根据本发明的一个优选实施方案,用于通过带材浇铸法制备快速凝固的合金的合金。 熔体淬火机 1  包括:一个主室 10  在其中可以形成真空或减压的惰性气氛; 和一个子室 30 ,它连接到主腔 10  通过可打开/可关闭的百叶窗 28 。 \n\n [0049] 在主室 10 ,提供一个熔化的坩埚 12  用于在其中熔化原料合金的冷却辊 14  用于快速冷却和固化熔融合金 3  从熔化的坩埚喂入的 12 ,芽(或中间包) 16  作为引导熔融合金的熔体引导装置 3  从熔化的坩埚 12  放在冷却辊上 14 以及收集手段 20  用于收集已由冷却辊固化并剥落的薄带合金 14 。 \n\n [0050] 熔化的坩埚 12  可以喂熔体 3 通过将原始合金熔化而制成, 16  以基本恒定的进料速度。 通过控制倾斜坩埚的操作,可以任意调节进料速度 12 , 例如。 \n\n [0051] 冷却辊的外圆周 14  由良好的热导体(例如铜)制成。 滚筒 14  可以具有30cm至100cm的直径和15cm至100cm的宽度。 滚筒 14  可以通过电动机(未示出)以预定的旋转速度旋转。 通过控制该旋转速度,冷却辊的圆周速度 14  可任意调节。 该熔体淬火机达到的冷却速度 1  可控制在大约10的范围内 2  K /秒至2×10 4  通过为冷却辊选择合适的转速来达到K / sec 14 , 例如。 \n\n [0052] 结束 16 a  拍摄 16  位于与将冷却辊的顶部连接在一起的线限定角度θ的位置 14  和滚筒的中心。 融化 3 ,已经倒在笋上了 16 ,送入冷却辊 14  由于自己的重量通过结束 16 a.  \n\n [0053] 拍摄 16 例如,由陶瓷制成的可以纠正熔体的流动 3  通过降低熔体的流速 3  达到暂时保留熔体流动的程度 3  从熔化的坩埚不断进料 12  以预定的流速。 该整流作用可以通过挡板来进一步提高,该挡板用于选择性地阻止熔体的表面流动。 3  倒在笋上 16 。 \n\n [0054] 通过拍摄 16 ,融化 3  可以在冷却辊的长度方向(或轴向)上沿一定宽度涂满一层大致均匀的厚度 14 。 另外,拍 16  也可以调节熔体的温度 3  即将到达冷却辊 14 。 熔体温度 3  拍摄中 16  优选其液相线温度比其液相线温度高约100K或更高。 这是因为如果熔化温度 3  如果过低,那么将影响所得快速凝固合金性能的初始晶体可能会局部成核并保留在快速凝固合金中。 枝条上的熔体温度 16  通过调节从熔化坩埚中流出的熔化物的温度可控制温度 12  朝着拍摄 16  或芽的热容量 16  本身,例如。 如有必要,可以为此目的专门提供一个射灯加热器(未显示)。 \n\n [0055] 图。  3显示拍摄 16  这个实施例。 拍摄 16  该实施例的实施例包括多个排水口 16 b 彼此隔开预定的间隙W 2 , 在最后 16 a  设置成面对冷却辊的外周 14 。 宽度W 1  (即充水宽度) 16 b  最好将其定义为0.5cm至10.0cm,更优选1.5cm至4.0cm。 在本实施例中,充填宽度W 1  定义为2厘米。 融化 3 ,已经倒在笋上了 16 ,然后与冷却辊接触 14  基本上保持相同的宽度W 1  在冷却辊的轴向A上 14 。 接触冷却辊后 14  在装满宽度W处 1 ,融化 3  随着冷却辊在辊的圆周上移动 14  旋转(即,由冷却辊向上推动) 14 )。 在运动中,融化 3  由冷却辊冷却 14 。 应该注意的是,为防止熔体通过间隙泄漏,末端之间的距离 16 a  拍摄 16  和冷却辊 14  最好将其定义为3mm或更小。 \n\n [0056] 间隙W 2  相邻排水管之间的距离优选地被定义为1cm至10cm。 如果熔体与冷却辊的外圆周之间的熔体接触区域(或熔体冷却区域) 14  以此方式分为多个部分,然后从每个排水口吸出的熔体 16 b  可以有效地冷却。 结果,即使将熔体倒在枝条上 16  以增加的进料速率,也可以实现所需的冷却速率,并且还可以获得包括至少60vol%的非晶态结构的快速凝固的合金。 因此,可以提高处理速度,并且可以大量生产用于纳米复合磁体的快速凝固的合金。 \n\n [0057] 要注意的是拍 16  不必具有上述配置。 或者,拍摄 16  可能只有一个排水口或更大的排水口宽度。 \n\n [0058] 回到图。  2,熔融合金 3  在凝固辊的外圆周上已经凝固的 14  然后离开冷却辊 14  作为薄带凝固合金 3 a 。 凝固合金 3 a  被去皮的东西被收集器压碎并收集在收集器中 20 。 \n\n [0059] 收藏者 20  包括一个旋转刀片 22  用于破碎薄带凝固合金 3 a 。 旋转刀片包括例如由不锈钢制成的多个切削刃,并且通过电动机(未示出)以约500rpm至约1,000rpm的速度旋转。 薄带凝固合金 3 a ,它已经从冷却辊上剥离了 14 ,由引导成员引导 24  到旋转刀片上 22 。 凝固合金 3 a  通过该实施方式的带材浇铸法制备的合金相对较厚(例如70μm至250μm)。 因此,与通过喷射铸造法获得的较薄的凝固合金相比,该凝固合金 3 a  可以被旋转刀片压碎 22  更容易。 \n\n [0060] 此外,由于薄带凝固合金 3 a  如上所述相对较厚,凝固的合金 5  被旋转刀片压碎的 22  纵横比甚至更接近1。 因此,粉碎的凝固合金 5  可以存放在收集盒中 26  高抽头密度 凝固合金 5  最好以至少1 g / cm的振实密度收集 3 。 然后,可以更有效地执行收集工作。 \n\n [0061] 当凝固合金破碎时 5  存放在收集箱中 26  达到预定量,收集箱 26  通过诸如皮带输送机之类的一些运输工具(未示出)被运输到副室 30 。 在这种情况下,在快门之前 28  打开,优选在子腔室中形成真空或减压惰性气氛 30  以及在主舱中 10 。 然后,主室内的真空或减压状态 10  可以维持。 后集尘箱 26  从主室出来 10 ,百叶窗 28  关闭以保持主腔室 10  密闭。 \n\n [0062] 之后,收集箱 26  盖上盖子 32 通过子腔室内的机制(未显示) 30 。 压碎的合金 5  密闭存储在收集箱内 26  通过打开可打开/关闭的百叶窗以这种方式取出 34 。 \n\n [0063] 如上所述,与喷射铸造法不同,带材铸造法不使用任何喷嘴。 也就是说,带钢铸造过程不会遇到与喷射铸造过程相关的各种问题。 具体地,在带材铸造工艺中,熔体的喷射速度不受喷嘴直径的限制,或者熔体在喷嘴处也不固化,从而使喷嘴被无意地凝固的合金堵塞。 因此,带钢铸造工艺对于批量生产非常有效。 此外,不需要喷嘴加热设备或熔融头压力控制机构。 结果,有利地大大降低了初始设备成本和设备运行成本。 \n\n [0064] 而且,在喷射铸造工艺中,喷嘴不可回收,因此即使通常需要高处理成本来形成喷嘴,也应一次性使用后将其丢弃。 相比之下,带材浇铸工艺允许重复使用枪shoot,因此需要低得多的设备运行成本。 \n\n [0065] 此外,在本发明的带钢铸造工艺中,与喷射铸造工艺相比,辊子可以以相对较低的速度旋转,并且可以增加所浇铸的熔融合金的重量。 因此,可以使所得的薄带变厚并且可以容易地收集。 \n\n 首选此组合物的原因 \n\n [0066] 稀土元素R是R不可缺少的元素 2 铁 14 B,它是显示永磁体特性所需的硬磁相。 在本发明中,R包括选自Pr,Nd,Dy和Tb的至少一种元素。 但是,为了控制非晶态的可成形性和结晶温度,可以用任何其他稀土元素代替R的一部分。R的摩尔分数不应低于1 at%,因为不能有效地提高矫顽力。  R摩尔分数小于1at%。 但是,如果R摩尔分数为6原子%以上,则没有硬磁R。 2 铁 14 会产生B相,矫顽力会大大降低。 考虑到这些考虑,R的摩尔分数x优选满足1≤x [0067] Q是B(硼)和/或C(碳)。  B是软磁性Fe等铁系硼化物必不可少的元素 3 B相和硬磁R 2 铁 14 B相是纳米复合型永磁体材料的主要相。 如果B的摩尔分数y在%范围之外超出15–30,则永磁体性能无法实现。 因此,B摩尔分数y优选满足15≤y≤30。 如本文所用,“铁 3 B”包括铁 3.5 B,几乎与铁没有区别 3 B. \n\n [0068] 此外,如果B低于15原子%,那么熔体的非晶态可成形性将显着降低。 在那种情况下,如果通过如本发明中的薄带连铸法制备快速凝固的合金,则非晶相将不能充分形成。 即使将这种快速凝固的合金加热并结晶,也无法获得具有良好磁体性能的金属结构。 应注意的是,C最多可以取代B的50%,因为磁性或金属结构不会受到取代的影响。 \n\n [0069] 除了上述元素之外,原料合金的其余部分可以仅是Fe,不过一部分可以用Co代替。 然后,退磁曲线的环路矩形度将得到改善,并且最大能量积(BH)  最高 将增加。 此外,一部分Fe也可以被选自Al,Si,V,Cr,Mn,Ni,Cu,Ga,Zr,Nb,Mo,Ag,Ta,W中的至少一种元素代替。  ,Pt,Au和Pb,因为那时永磁体的性能也得到改善。 但是,如果至少一个取代基的总摩尔分数z选自Co,Al,Si,V,Cr,Mn,Ni,Cu,Ga,Zr,Nb,Mo,Ag,Ta, 有助于实现这些效果的W,Pt,Au和Pb超过7 at%,则磁化强度将降低。 因此,优选的z范围是0≤z≤7at%。 此外,由于当z为0.5at%以上时获得更显着的效果,因此更优选的z范围为0.5≤z≤7at%。 \n\n 首选这些制造条件的原因 \n\n [0070] 在本发明中,具有上述特定组成的熔融合金通过带材浇铸工艺快速冷却和固化,以用熔融淬火机进行。 1  如图所示。 如图2所示,从而获得薄带合金。 将熔融合金送入冷却辊,冷却辊在真空或减压惰性气体气氛中以3 m / s的圆周速度旋转至小于20 m / s,以每单位接触宽度的进给速度为 0.2 kg / min / cm至5.2 kg / min / cm。 以这种方式,可以制备包括至少60vol%的非晶态结构的快速凝固的合金。 通过以高百分比对包括非晶态结构的原料合金进行加热/结晶处理,可以获得表现出良好磁性能的纳米复合型磁体。 \n\n [0071] 以下是如上所述的冷却辊优选具有3m / s至小于20m / s的圆周速度的原因。 具体地,如果辊的圆周速度小于3m / s,则冷却能力将太低而不能获得包含至少60vol%的非晶结构的快速凝固的合金。 另一方面,如果辊的圆周速度为20m / s或更大,则将难以在辊上向上移动熔体。 在这种情况下,冷却的合金会散落成薄片,从而很难收集它们。 最佳圆周速度例如随冷却辊的特定结构或材料或熔体进料速度而变化。 但是,一般而言,如果圆周速度高,则所得的薄带合金将非常薄,笨重且难以处理。 另一方面,如果圆周速度低,则难以获得足够的冷却速度。 然而,如果降低熔体进料速率以提高冷却速率,则生产率将下降并且带钢铸造工艺的优势将降低。 考虑到这些考虑,冷却辊的圆周速度优选为5m / s至15m / s,更优选为6m / s至10m / s。 \n\n [0072] 如上所述,如上所述,每单位接触宽度的进给速度优选为5.2kg / min / cm以下的原因如下。 具体地,如果进料速率超过5.2kg / min / cm,则不能达到预定的冷却速率,并且不能获得期望的包括至少60vol%的非晶结构的快速凝固的合金。 每单位接触宽度的进给速度的优选范围可随辊的特定圆周速度或结构而变化。 例如,每单位接触宽度的进料速度优选为4.0kg / min / cm或更小,更优选为3.0kg / min / cm或更小。 \n\n [0073] 另外,由于以下原因,每单位接触宽度的进料速度优选为至少0.2kg / min / cm。 具体地,如果进料速率小于0.2kg / min / cm,则不能以足够的流量将熔体稳定地供应到冷却辊上,不能确保熔体与辊之间的良好接触,并且熔池不能 在冷却辊上不断形成。 因此,薄带快速凝固的合金将形成碎片。 也就是说,原料合金将被迅速冷却和不均匀地固化。 当快速冷却状态以这种方式变化时,不能恒定地获得所需的用于纳米复合磁体的快速凝固的合金,包括预定体积百分比的非晶结构。 \n\n [0074] 此外,如果整个机器的熔体进料速率(或加工速率)小于3kg / min,则生产率差并且不能以成本有效的方式供应材料。 因此,整个机器的熔体进料速度优选为至少3kg / min。 然而,为了获得如此高的生产率,需要谨慎选择枝条的形状以及冷却辊的形状和圆周速度,以使每分钟至少可以处理3千克熔体,同时提供熔体进料的条件。 如上所述,满足每单位接触宽度为0.2kg / min / cm至5.2kg / min / cm 2的要求。 \n\n [0075] 例如,假设一个包含三个排水口的枝条 16 b  如图2所示,使用具有2cm(充填)宽度的(充填​​)宽度。  3.在这种情况下,即使以3.0 kg / min的进料速度将熔体供应到枝条上,每单位接触宽度的熔体进料速度也将为0.5 kg / min / cm(= 3.0(kg / min)÷  (2×3)(厘米))。 因此,可以看出,可以恒定地获得包括高百分比的非晶态结构的快速凝固的合金。 \n\n [0076] 另外,本发明人发现,当使用直径为约30cm至约50cm,宽度为约50cm的Cu辊并以5m / s至10m / s的圆周速度旋转时,进给 每单位接触宽度的最大速率优选为约0.5kg / min / cm至约3.0kg / min / cm。 在那种情况下,如果使用具有适当形状的芽,那么也可以以5kg / min至15kg / min的进料速度进行快速冷却过程。 \n\n [0077] 例如,通过适当地确定枝条(中间包)的形状,熔融物排泄物的宽度和数量以及熔融物进料速率,所得的薄带快速凝固合金可具有在优选范围内的平均厚度和宽度。 薄带快速凝固合金的宽度优选为15mm至80mm。 同样,薄带合金可能不会太薄或太厚。 如果凝固的合金太薄,则其振实密度将很低,并且难以按预期收集合金。 然而,如果凝固的合金太厚,则该合金可能已经以互不相同的冷却速率在熔体/辊接触表面和自由表面(即熔体表面)上冷却了。 也就是说,围绕自由表面的一部分合金可能已经以不足的速度冷却。 考虑到这些考虑,薄带合金的厚度优选为70μm至250μm,更优选为100μm至200μm。 \n\n [0078] 在室中形成减压惰性气氛的情况下,如果在铸造过程中惰性气氛的压力过高,则在冷却辊处于冷却状态时,辊周围的惰性气体可能会无意间被吸收到合金中。 高速旋转。 在这种情况下,无法实现所需的恒定冷却状态。 另一方面,如果惰性气氛的压力太低,则离开辊子的薄带合金将不能被惰性气体足够快地冷却。 因此,薄带合金将过度结晶,并且不能获得包含更大体积百分比的非晶相的合金。 在这种情况下,通过加热/结晶过程获得的合金将具有劣化的磁性能。 考虑到这些考虑,优选将惰性气体控制为具有1kPa至50kPa的压力。 \n\n 快速凝固合金的评估方法 \n\n [0079] 如上所述,如果在通过带铸工艺获得的金属结构中具有更大体积百分比的晶体结构,则在随后的热处理过程中,晶体部分将过度生长,从而不利地影响磁性能。 因此,重要的是通过薄带连铸法获得包含更大体积百分比的非晶相的合金。 为了实现该目的,有效地定量估计非晶相相对于实际获得的快速凝固的合金的百分比是有效的。 \n\n [0080] 本发明人发现,通过粉碎薄带状铸造合金并通过热分析获得结晶过程中产生的热量来定量估计非晶相的体积百分比的方法是一种简单但高度精确的方法。 因此,本发明人决定采用这种方法。 \n\n [0081] 如以下实施例所述,根据该评估方法,发现当Fe 3 B相作为主相产生的热量为28J / g或更高,通过随后的加热/结晶过程获得的磁体粉末表现出良好的磁性。 在主相结晶过程中,以过大的冷却速度获得的合金产生的热量约为45 J / g,假定该热量为100%非晶态。 因此,产生的热量为28J / g以上实质上意味着该合金具有包含至少60vol%的非晶结构的金属结构。 \n\n [0082] 本发明人还发现,通过粉碎薄带状铸造合金并测量其矫顽力来定量估计非晶相的体积百分比的方法是一种简单但高度精确的方法。 因此,本发明人决定采用这种方法。 \n\n [0083] 据信非晶态结构几乎没有矫顽力。 因此,如果实际获得的薄带快速凝固合金具有低矫顽力H  J ,则该合金可被认为包括较大体积百分比的非晶相。 更具体地,如果待进行加热/结晶处理的合金具有矫顽力H  J 如果在10kA / m以下,则随后通过加热/结晶过程获得的磁体粉末表现出良好的磁性。 因此,本发明人认为矫顽力H  J 优选为10kA / m或更小。 \n\n 实施例和比较例 \n\n [0084] 以如下方式混合各材料以获得具有下表1中的No.1至11表示的各种组成的原料合金。然后,在表1所示的铸造条件下对原料合金进行带钢铸造工艺。 随后,将每种所得合金粉碎,以获得20g已过筛至150μm或更小的尺寸的粉末。 以这种方式,获得了待评估的合金粉末(或样品粉末)。 对这些待评估的合金粉末进行热分析和磁性能评估。 使用差示扫描量热仪(DSC)进行热分析(即,对结晶过程中产生的热量的测量)。 具体地,在550℃至650℃的温度范围内以40℃的粉末以10℃/ min的升温速率进行测量。另一方面,使用a对磁性进行评价。 振动样品磁力计(VSM)。 具体地,以最大磁场强度为1.6MA / m对50mg粉末进行评估。 \n\n [0085] \n\n    表格1  制造条件  滚轴 熔化 每 压力  合金成分(%) 周边设备 喂食 联系 铸造  R M 速度 率 宽度 大气层  钕 B 有限公司 Cr 铁 (多发性硬化症) (公斤/分钟) (公斤/分钟/厘米) (千帕)  例子 1 4.5 18.5 0.0 0.0 77.0 6 8 2.0 8  2 4.5 18.5 2.0 2.0 73.0 8 8 2.0 8  3 4.8 18.5 2.2 2.2 72.3 6 12 3.0 8  4 4.5 17.0 3.0 0.0 75.5 8 12 3.0 8  5 4.5 18.0 0.0 3.0 74.5 6 8 2.0 8  6 3.8 18.5 3.0 0.8 74.0 8 8 2.0 8  7 5.0 18.0 3.0 3.0 71.0 6 12 3.0 8  8 5.5 18.5 5.0 5.0 66.0 8 12 3.0 8  通讯 9 4.8 10.0 2.2 2.2 80.8 8 8 2.0 8  10 4.5 18.5 2.0 2.0 73.0 1 6 1.0 8  11 3.8 18.5 3.0 0.8 74.0 8 35 5.8 8 \n\n [0086] 关于No.1〜11的各试样粉末(试样),主相(Fe,Fe)产生的热量(J / g) 3 在下表2中示出了通过热分析获得的结晶期间和热处理之前的B化合物相)以及热处理之前的矫顽力(kA / m)。磁性(即剩磁B) r ,矫顽力H  J 和最大能量积(BH)  最高 表2还示出了通过在表2所示的热处理温度下对这些样品粉末进行30分钟的热处理而获得的永磁体粉末。 \n\n [0087] \n\n    表2  预热处理 预热  热分析结果 治疗 热 后热处理  热量(J / g) 矫顽力 治疗 磁性能  主相产生 H J 温度 Br H J(BH)  最高   结晶期间 (kA / m) (°C) (T) (kA / m)(千焦/米 3 )   例子 1 33.1 3.9 640 0.95 280 71  2 37.4 3.9 690 1.00 370 89  3 28.1 4.5 680 0.97 400 83  4 31.8 4.2 630 0.96 300 76  5 35.3 4.1 660 0.93 355 79  6 39.6 3.9 630 1.03 280 85  7 30.3 4.7 700 0.85 500 74  8 33.5 4.5 710 0.80 620 73  通讯  9 12.8 95.3 680 0.73 340 42  10 3.4 302.6 690 0.54 220 31  11 7.9 265.9 630 0.66 200 34 \n\n [0088] 图。 图4示出了通过对热处理后表现出良好的磁性的样品进行热分析而获得的热分析曲线。 在此热分析曲线中,对于在升温过程中发生结晶的两种类型的相,可以识别出随着结晶产生的热量的峰值。 通过获得该第一峰的面积来计算表2中所示的在结晶过程中产生的热量的每一个。 从表2中可以看出,代表本发明实例的样品编号1至8中的每一个在通过热分析获得的其主相结晶期间产生的热量大于28J / g。 因此,这些样品中的每一个都可以被认为包括至少60体积%的非晶相。 \n\n [0089] 图。 图5示出了在热处理之后表现出良好的磁性的样品的磁滞回线。 图。 图6示出图5的一部分。  5在原点附近较大比例。 作为磁性能评价的结果,表示本发明的实施例的样品No.1至样品8的矫顽力均小于10kA / m。 被认为在铸造过程之后包括至少60vol%的非晶相的这些样品中的每一个,即使在经历了用于结晶的热处理之后,也表现出良好的磁性能。 \n\n [0090] 另一方面,代表比较例的样品9至11中的每个在其主相的结晶过程中产生少量的热量并且具有高的矫顽力。 认为这些代表比较例的样品中的每一个都包括处于铸态的至多30vol%的非晶相。 至于9号样品,由于其原始合金具有低含量的B和低的非晶可成形性,非晶态相在所得快速凝固合金中所占的百分比较低。 在10号和11号样品中,无定形相的百分比也很低。 这可能是因为辊的圆周速度过低或熔体供给速度过高导致无法获得足够的冷却速度。 而且,即使在经受了用于结晶的热处理之后,这些代表比较例的样品中的每一个仍表现出劣化的磁性能,这与代表本发明示例的样品编号1至8相反。 这可能是因为,即使在热处理之前,大量存在于那些样品中的结晶相也会由于热处理而过度生长。 \n\n [0091] 这些测量结果表明,作为热处理后表现出良好磁性能的永磁体粉末,原料合金优选主要由非晶相组成。 根据本发明,通过采用特定的组成范围和适当的制造条件,可以通过具有成本效益的带钢铸造工艺而不是传统的喷射铸造工艺来获得包括至少60vol%的非晶相的原材料合金。 有效地进行批量生产。 \n\n 工业适用性 \n\n [0092] 根据本发明,提供了一种通过带材铸造法制造纳米复合型磁体用原材料合金的方法。 通过将该方法用于工业生产,可以以比常规方法更低的成本制备纳米复合型磁体原料合金。 在本发明中采用的带钢铸造工艺要求降低的制造成本,并且对于大量生产是有效的。 因此,可以以较低的成本提供显示出优异的磁性能,任何硬铁氧体磁体都无法实现的永磁体粉末。');
INSERT INTO `os_patent_instruction_text` VALUES (12918, 22747, NULL, NULL);
INSERT INTO `os_patent_instruction_text` VALUES (12919, 22748, 'BACKGROUND OF THE INVENTION\n\n[0001]1. Field of the Invention\n\n[0002]The present invention relates to an R—Fe—B rare-earth magnet and a method of producing the same.\n\n[0003]2. Description of Related Art\n\n[0004]In the prior art, neodymium (Nd) and/or praseodymium (Pr) have primarily been used as the rare-earth element R of an R—Fe—B rare-earth magnet because the use of these rare-earth elements provides particularly desirable magnetic properties.\n\n[0005]In recent years, the variety of applications of R—Fe—B magnets has expanded, and the Nd and Pr consumption is increasing rapidly. Accordingly, there is a strong demand to improve the efficiency of use of Nd and Pr, which are precious natural resources, and for reducing the material cost of an R—Fe—B magnet.\n\n[0006]The simplest way to reduce the Nd and Pr consumption is to substitute Nd and Pr with another rare-earth element that functions similarly to Nd and Pr. It is known in the art, however, that the magnetic properties, such as magnetization, deteriorate when a rare-earth element other than Nd and Pr is added to an R—Fe—B rare-earth magnet. Therefore, rare-earth elements other than Nd and Pr have rarely been used in R—Fe—B rare-earth magnets.\n\n[0007]For example, when an R—Fe—B alloy is made by melting and solidifying a material alloy with Yttrium (Y), a rare-earth element, being added to the material along with Nd, Y is taken into the main phase of the alloy. The main phase of an R—Fe—B alloy principally has a tetragonal R2Fe14B type crystalline structure. It is known in the art that the highest magnetization is exhibited when R is Nd and/or Pr (and dysprosium (Dy), terbium (Tb), etc., substituting part of Nd and/or Pr). When R in the R2Fe14B crystalline structure forming the main phase is substituted either partially or entirely with a rare-earth element such as Y, the magnetization substantially decreases.\n\n[0008]An R—Fe—B magnet with cerium (Ce), a rare-earth element like Nd and Pr, added thereto is disclosed in the report of Proc. 16th Inter. Workshop on Rare Earth Magnets and their Applications, 2000. P99. According to the report, the residual magnetic flux density or remanence Br decreases linearly due to the addition of Ce.\n\n[0009]In view of the above, it is believed that the addition of any magnetization-decreasing rare-earth element R, other than Nd, Pr, Dy, and Tb, should be avoided as much as possible.\n\n[0010]Nd and/or Pr not only form a main phase but also exist in a grain boundary phase, and play an important roll of forming a liquid phase in a sintering process. However, Nd and/or Pr existing in a grain boundary phase form a non-magnetic phase and do not contribute to the improvement of magnetization. In other words, a part of Nd and/or Pr is always consumed for the formation of a non-magnetic phase, failing to directly contribute to the magnetic properties.\n\n[0011]In order to efficiently use Nd and/or Pr so as to effectively achieve desirable magnetic properties, it is preferred that most of Nd and/or Pr is taken into the R2Fe14B crystal phase. However, techniques for realizing this did not exist in the prior art.\n\n[0012]In the prior art, a part of Fe in the main phase having a tetragonal R2Fe14B crystalline structure is substituted with cobalt (Co) by adding Co to a material alloy in order to improve the heat resistance of an R—Fe—B rare-earth magnet. When a part of Fe is substituted with Co, the Curie temperature of the main phase increases, whereby desirable magnetic properties can be exhibited even at higher temperatures.\n\n[0013]In recent years, in some fields of art such as motors for use in automobiles, there is a demand for a magnet having a higher performance and hence a demand for the use of an R—Fe—B rare-earth magnet having a higher performance than that of a ferrite magnet. However, the heat resistance of an R—Fe—B rare-earth magnet is not sufficient for use under a high temperature environment such as those experienced by a motor in an automobile. Accordingly, there is a strong demand for further improving the heat resistance of R—Fe—B rare-earth magnets.\n\n[0014]It is believed that in order to further improve the heat resistance of an R—Fe—B rare-earth magnet, it is preferable to add more Co. However, Co added to a material alloy not only substitutes Fe in the main phase of a sintered magnet but also exists in a grain boundary phase to form an NdCo2 compound and/or a PrCO2 compound therein. Thus, a part of Co added is not used for substituting Fe but is wasted in the grain boundary phase. Another problem is that the above compounds are a ferromagnetic substance and thus decreases the coercive force of the sintered magnet. Therefore, simply increasing the amount of Co to be added is not an effective way to substitute Fe in the main phase, and doing do can substantially decrease the coercive force of an R—Fe—B rare-earth magnet.\n\nSUMMARY OF THE INVENTION\n\n[0015]It is therefore an object of this invention to provide a rare-earth sintered magnet exhibiting desirable magnetic properties in which the amount of Nd and/or Pr forming a non-magnetic phase in a grain boundary phase is reduced, and a method of producing the same.\n\n[0016]Another object of the present invention is to provide a rare-earth sintered magnet in which added Co is efficiently taken into the main phase, thereby exhibiting desirable magnetic properties, and a method of producing the same.\n\n[0017]A rare-earth sintered magnet of this invention has a composition of (R1x+R2y)T100-x-y-zQz (R1 is at least one element selected from the group consisting of all rare-earth elements excluding La (lanthanum), Y (yttrium) and Sc (scandium); R2 is at least one element selected from the group consisting of La, Y and Sc; T is at least one element selected from the group consisting of all transition elements; and Q is at least one element selected from the group consisting of B and C), and includes, as a main phase, a crystal grain of an Nd2Fe14B crystalline structure, wherein: molar fractions x, y and z satisfy 8≦x≦18 at %, 0.1≦y≦3.5 at % and 3≦z≦20 at %, respectively; and a concentration of R2 is higher in at least a part of a grain boundary phase than in the crystal grain.\n\n[0018]In a preferred embodiment, the molar fractions x and y satisfy 0.01≦y/(x+y)≦0.23.\n\n[0019]In a preferred embodiment, R2 includes at least Y (yttrium).\n\n[0020]In a preferred embodiment, an amount of oxygen is in a range of 2000 ppm by weight to 8000 ppm by weight.\n\n[0021]A method of producing a rare-earth sintered magnet, according to the invention, includes the steps of: preparing a powder of a rare-earth alloy having a composition of (R1x+R2y)T100-x-y-zQz (R1 is at least one element selected from the group consisting of all rare-earth elements excluding La, Y and Sc; R2 is at least one element selected from the group consisting of La, Y and Sc; T is at least one element selected from the group consisting of all transition elements; and Q is at least one element selected from the group consisting of B and C), wherein molar fractions x, y and z satisfy 8≦x≦18 at %, 0.1≦y≦3.5 at % and 3≦z≦20 at %, respectively; and sintering the rare-earth alloy powder, wherein R2 existing in a main phase crystal grain of an Nd2Fe14B crystalline structure in the rare-earth alloy before sintering is diffused into a grain boundary phase in the sintering step, whereby a concentration of R2 is higher in at least a part of the grain boundary phase than in the crystal grain.\n\n[0022]In a preferred embodiment, an amount of oxygen included in the rare-earth alloy powder is in a range of 2000 ppm by weight to 8000 ppm by weight.\n\n[0023]In a preferred embodiment, R1 existing in the grain boundary phase in the rare-earth alloy before sintering is diffused into the main phase crystal grain in the sintering step.\n\n[0024]In a preferred embodiment, an oxide of R2 is formed in the grain boundary phase in the sintering step.\n\n[0025]In a preferred embodiment, the sintering step includes a first step of maintaining the rare-earth alloy powder at a temperature in a range of 650 to 1000° C. for 10 to 240 minutes, and a second step of further sintering the rare-earth alloy powder at a temperature higher than that used in the first step.\n\n[0026]In a preferred embodiment, the rare-earth alloy powder is obtained through pulverization in a gas whose oxygen concentration is controlled.\n\n[0027]In a preferred embodiment, the rare-earth alloy powder is obtained through pulverization in a gas whose oxygen concentration is controlled to be 20000 ppm or less by volume.\n\n[0028]In a preferred embodiment, an average particle diameter (FSSS particle size) of the rare-earth alloy powder is 5 μm or less.\n\n[0029]Another inventive rare-earth sintered magnet has a composition of (R1x+R2y)(T1p+T2q)100-x-y-z-rQzMr (R1 is at least one element selected from the group consisting of all rare-earth elements excluding La (lanthanum), Y (yttrium) and Sc (scandium); R2 is at least one element selected from the group consisting of La, Y and Sc; T1 is Fe; T2 is at least one element selected from the group consisting of all transition elements excluding Fe; Q is at least one element selected from the group consisting of B and C; and M is at least one element selected from the group consisting of Al, Ga, Sn and In), and includes, as a main phase, a crystal grain of an Nd2Fe14B crystalline structure, wherein: molar fractions x, y, z, p, q and r satisfy 8≦x+y≦18 at %, 0[0030]In a preferred embodiment, the molar fraction y satisfies 0.5[0031]In a preferred embodiment, R2 includes at least Y (yttrium).\n\n[0032]In a preferred embodiment, T2 includes at least Co (cobalt).\n\n[0033]In a preferred embodiment, an amount of oxygen is in a range of 2000 ppm by weight to 8000 ppm by weight.\n\n[0034]Another inventive method of producing a rare-earth sintered magnet includes the steps of: preparing a powder of a rare-earth alloy having a composition of (R1x+R2y)(T1p+T2q)100-x-y-z-rQzMr (R1 is at least one element selected from the group consisting of all rare-earth elements excluding La (lanthanum), Y (yttrium) and Sc (scandium); R2 is at least one element selected from the group consisting of La, Y and Sc; T1 is Fe; T2 is at least one element selected from the group consisting of all transition elements excluding Fe; Q is at least one element selected from the group consisting of B and C; and M is at least one element selected from the group consisting of Al, Ga, Sn and In), and including, as a main phase, a crystal grain of an Nd2Fe14B crystalline structure, wherein: molar fractions x, y, z, p, q and r satisfy 8≦x+y≦18 at %, 02Fe14B crystalline structure in the rare-earth alloy before sintering is diffused into a grain boundary phase in the sintering step, whereby a concentration of R2 is higher in at least a part of the grain boundary phase than in the crystal grain.\n\n[0035]In a preferred embodiment, an amount of oxygen included in the rare-earth alloy powder is in a range of 2000 ppm by weight to 8000 ppm by weight.\n\n[0036]In a preferred embodiment, R1 existing in the grain boundary phase in the rare-earth alloy before sintering is diffused into the main phase crystal grain in the sintering step.\n\n[0037]In a preferred embodiment, an oxide of R2 is formed in the grain boundary phase in the sintering step.\n\n[0038]In a preferred embodiment, the sintering step includes a first step of maintaining the rare-earth alloy powder at a temperature in a range of 650 to 1000° C. for 10 to 240 minutes, and a second step of further sintering the rare-earth alloy powder at a temperature higher than that used in the first step.\n\n[0039]In a preferred embodiment, the rare-earth alloy powder is obtained through pulverization in a gas whose oxygen concentration is controlled.\n\n[0040]In a preferred embodiment, the rare-earth alloy powder is obtained through pulverization in a gas whose oxygen concentration is controlled to be 20000 ppm or less by volume.\n\n[0041]In a preferred embodiment, an average particle diameter (FSSS particle size) of the rare-earth alloy powder is 5 μm or less.\n\nBRIEF DESCRIPTION OF THE DRAWINGS\n\n[0042]FIG. 1A to FIG. 1C are schematic diagrams of main phase crystal grains and a grain boundary phase, wherein FIG. 1A illustrates the microstructure of a material alloy, FIG. 1B illustrates the microstructure during a sintering process, and FIG. 1C illustrates the microstructure of a sintered magnet;\n\n[0043]FIG. 2 is a graph illustrating an example of a temperature profile in a hydrogen pulverization process that may suitably be used in the present invention;\n\n[0044]FIG. 3 is a graph illustrating the relationship between the Y, La and Ce contents and the residual magnetic flux density Br for sintered magnets each having a composition of Nd11.8RE′2.4Fe79.7B6.1 (where RE′ is Y, La or Ce);\n\n[0045]FIG. 4A is a backscattering electron image of Sintered Magnet A (Nd11.8Y2.4Fe79.7B6.1), FIG. 4B is a Y mapping image of Sintered Magnet A, and FIG. 4C is a schematic diagram illustrating the microstructure of Sintered Magnet A;\n\n[0046]FIG. 5A is a backscattering electron image of Sintered Magnet B (Nd11.8La2.4Fe79.7B6.1), FIG. 5B is an La mapping image of Sintered Magnet B, and FIG. 5C is a schematic diagram illustrating the microstructure of Sintered Magnet B;\n\n[0047]FIG. 6A is a backscattering electron image of Sintered Magnet C (Nd11.8Ce2.4Fe79.7B6.1), FIG. 6B is a Ce mapping image of Sintered Magnet C, and FIG. 6C is a schematic diagram illustrating the microstructure of Sintered Magnet C;\n\n[0048]FIG. 7A to FIG. 7D are schematic diagrams of main phase crystal grains and a grain boundary phase, wherein FIG. 7A illustrates the microstructure of a material alloy, FIG. 7B and FIG. 7C each illustrate the microstructure during a sintering process, and FIG. 7D illustrates the microstructure of a sintered magnet;\n\n[0049]FIG. 8 is a graph illustrating the relationship among the Curie point (Curie temperature), the Y content and the Co content, with the vertical axis of the graph representing the Curie temperature and the horizontal axis representing the Y content;\n\n[0050]FIG. 9 is a graph illustrating the relationship among the coercive force Hcj, the Y content and the Co content, with the vertical axis of the graph representing the coercive force and the horizontal axis representing the Co content;\n\n[0051]FIG. 10A is a backscattering electron image of a material alloy, and FIG. 10B to FIG. 10F are mapping images of the material alloy for Nd, Dy, Co, Fe and Y, respectively; and\n\n[0052]FIG. 11A is a backscattering electron image of a sintered magnet, and FIG. 11B to FIG. 11F are mapping images of the sintered magnet for Nd, Dy, Co, Fe and Y, respectively.\n\nDETAILED DESCRIPTION OF THE INVENTION\n\n[0053]In a first embodiment of the present invention, Y, La and/or Sc are added, in addition to Nd, and these elements are concentrated in a grain boundary phase, so that an amount of Nd that would otherwise be consumed for the formation of a non-magnetic phase in the grain boundary phase is diffused from the grain boundary phase into the main phase crystal grains. In this way, Nd is efficiently used as a constituent element of the main phase (Nd2Fe14B phase) providing hard magnetism. The term “Nd2Fe14B phase” as used herein includes a phase in which a part of Nd is substituted with Pr, Dy and/or Tb.\n\n[0054]In a rare-earth magnet of the present invention, a large amount of Nd exists in the Nd2Fe14B phase, which is the main phase, while Y, La and/or Sc play the roll of Nd in the grain boundary phase. Thus, it is possible to reduce the amount of Nd (Pr) to be used with substantially no decrease in the magnetization.\n\n[0055]According to an experiment conducted by the present inventors, Y exists primarily in the main phase, thereby decreasing the magnetization, in the stage of a material alloy such as an ingot cast alloy or a strip cast alloy. The experiment also reveals that the concentration of Y in the main phase of an ingot cast alloy is higher than that of a strip cast alloy, since a cooling rate by an ingot casting method (less than 102° C./sec) is lower than that by a strip casting method (102° C./sec or more). A feature of the present invention lies in that Y in the main phase is concentrated in the grain boundary phase through a sintering process after making a powder of such a material alloy.\n\n[0056]Initially, the feature of the present invention will be described with reference to FIG. 1A to FIG. 1C.\n\n[0057]FIG. 1A to FIG. 1C are schematic diagrams of main phase crystal grains and a grain boundary phase, illustrating how Nd and Y are diffused and distributed through a sintering process from the material alloy stage.\n\n[0058]First, as illustrated in FIG. 1A, in the mother alloy stage, Y and Nd are both taken in the crystal grains of Nd2Fe14B, and Y and Nd exist at the site of rare earth element of Nd2Fe14B.\n\n[0059]When the mother alloy is made by an ingot casting method, the Y concentration in the grain boundary phase is lower than that in the crystal grains, and an Nd-rich phase is formed in the grain boundary phase. When the mother alloy is made by a strip casting method, R2 such as Y exists also in the grain boundary, but this is due to a non-equilibrium state. R2 existing in the grain boundary also has the same effect in subsequent steps as that of R2 existing in the main phase.\n\n[0060]According to the present invention, Y is diffused from the inside of the crystal grains (main phase) into the grain boundary phase through the sintering process. During the sintering process, an oxide of Y is formed in the grain boundary phase, as illustrated in FIG. 1B. At this time, Nd is diffused in the opposite direction. As a result, the Y concentration in the grain boundary phase increases to be greater than that in the crystal grains. As a result, the amount of Y contained in the main phase decreases, as illustrated in FIG. 1C, thereby increasing the magnetization.\n\n[0061]It is believed that in order to realize the mutual diffusion of Y and Nd as described above, an appropriate amount of oxygen needs to be present in the grain boundary phase during the sintering process. This is because the present invention causes the diffusion as described above utilizing the fact that Y more stably combines with oxygen to form an oxide than Nd. For such an introduction of oxygen into the grain boundary phase, it is preferred to slightly oxidize the powder particle surface in the pulverization step, for example.\n\n[0062]The first embodiment of the present invention will now be described in greater detail.\n\nMaterial Alloy\n\n[0063]First, a rare-earth alloy having a composition of (R1x+R2y)T100-x-y-zQz is prepared. In the composition, R1 is at least one element selected from the group consisting of all rare-earth elements excluding Y (yttrium), La (lanthanum) and Sc (scandium); R2 is at least one element selected from the group consisting of La, Y and Sc; T is at least one element selected from the group consisting of all transition elements; Q is at least one element selected from the group consisting of B and C; and the molar fractions x, y and z satisfy 8≦x≦18 at %, 0.1≦y≦3.5 at % and 3≦z≦20 at %, respectively.\n\n[0064]For example, an ingot casting method or a quenching method (a strip casting method or a centrifugal casting method) may be used for making such an alloy. As an example, a method of making a material alloy by using a strip casting method will now be described.\n\n[0065]First, an alloy having a composition as shown above is melted in a high frequency melting process in an argon atmosphere to obtain a molten alloy. After maintaining the molten alloy at 1350° C., the molten alloy is rapidly cooled by a single chill roll method so as to obtain a solidified alloy in the form of flakes having a thickness of about 0.3 mm, for example. The cooling conditions include, for example, a roll circumferential speed of about 1 m/sec, a cooling rate of 500° C./sec and a sub-cooling degree of 2000° C. The rapidly cooled alloy thus obtained is pulverized into flakes having a size of 1 to 10 mm before the hydrogen pulverization process. A method of producing a raw material alloy by a strip casting method is disclosed in, for example, U.S. Pat. No. 5,383,978, the disclosure of which is hereby incorporated by reference.\n\n[0066]As noted above, Y exists in the Nd2Fe14B main phase in such a material alloy stage.\n\nFirst Pulverization Step\n\n[0067]The material alloy that has been coarsely pulverized into flakes is filled into a plurality of raw material packs (made of stainless steel, for example) and mounted on a rack. Then, the rack with the raw material packs mounted thereon is inserted into a hydrogen furnace. Then, the hydrogen furnace is closed and a hydrogen embrittlement process (hereinafter referred to also as “a hydrogen pulverization process”) is started. The hydrogen pulverization process is performed in accordance with a temperature profile illustrated in FIG. 2, for example. In the example of FIG. 2, an evacuation process I is performed for 0.5 hour, after which a hydrogen occlusion process II is performed for 2.5 hours. In the hydrogen occlusion process II, a hydrogen gas is supplied into the furnace so as to turn the inside of the furnace into a hydrogen atmosphere. At this time, the hydrogen pressure is preferably about 200 to about 400 kPa.\n\n[0068]Then, a dehydrogenation process III is performed for 5.0 hours under a depressurized atmosphere of about 0 to about 3 Pa, after which a material alloy cooling process IV is performed for 5.0 hours while supplying an argon gas into the furnace.\n\n[0069]In the cooling process IV, while the atmosphere temperature in the furnace is relatively high (e.g., greater than 100° C.), the material alloy is cooled by supplying an inert gas at normal temperature into the hydrogen furnace. Then, after the material alloy temperature has decreased to a relatively low level (e.g., 100° C. or less), an inert gas that has been cooled below normal temperature (e.g., about 10° C. lower than room temperature) is supplied into the hydrogen furnace. It is preferred, in terms of the cooling efficiency, to cool the material alloy in this way. The amount of the argon gas to be supplied may be set to about 10 to about 100 Nm3/min.\n\n[0070]It is preferred that after the temperature of the material alloy has decreased to be about 20 to about 250° C., an inert gas of a generally normal temperature (a temperature that is lower than room temperature by 50° C. or less) is supplied into the hydrogen furnace, allowing the temperature of the material alloy to reach a normal temperature level. In this way, it is possible to avoid dew condensation in the furnace occurring when the hydrogen furnace is opened. When moisture is present in the furnace due to dew condensation, the moisture is frozen/vaporized in the evacuation process, thereby making it difficult to increase the degree of vacuum and increasing the period of time required for the evacuation process I.\n\n[0071]It is preferred that the coarsely-pulverized alloy powder obtained through the hydrogen pulverization process is taken out of the hydrogen furnace under an inert atmosphere so that the coarsely pulverized powder does not contact the atmospheric air. In this way, the coarsely pulverized powder is prevented from being oxidized and generating heat, and the magnetic properties of the magnet are improved. Then, the coarsely-pulverized material alloy is filled into a plurality of raw material packs and mounted on a rack.\n\n[0072]Through the hydrogen pulverization process, the rare-earth alloy is pulverized to a size of about 0.1 to several millimeters, with the average particle diameter being 500 μm or less. It is preferred that after the hydrogen pulverization process, the embrittled material alloy is cracked into finer powder and cooled by using a cooling device such as a rotary cooler. When the material is taken out at a relatively high temperature, the duration of the cooling process using a rotary cooler, or the like, can be increased accordingly.\n\n[0073]Through the hydrogen pulverization process, the material alloy is cracked at R (rare earth metal)-rich portions thereof due to hydrogen occlusion. As a result, a large amount of rare earth metal is exposed on the surface of the coarsely pulverized powder, and the coarsely pulverized powder in this state is very likely to be oxidized.\n\nSecond Pulverization Process\n\n[0074]Next, the coarsely pulverized powder that has been made in the first pulverization process is finely pulverized by using a jet mill. A cyclone classifier is connected to the jet mill used in the present embodiment.\n\n[0075]The jet mill receives a supply of the rare-earth alloy (coarsely pulverized powder) that has been coarsely pulverized in the first pulverization process, and the rare-earth alloy is pulverized in the pulverizer. The powder that has been pulverized in the pulverizer is collected in a collection tank via the cyclone classifier.\n\n[0076]The process will now be described in greater detail.\n\n[0077]The coarsely pulverized powder is introduced into the pulverizer and is flung up in the pulverizer by a rapid flow of an inert gas injected from an internal nozzle. Thus, the coarsely pulverized powder flies around in the pulverizer along with the rapid gas flow so as to be finely pulverized through collision between powder particles being pulverized.\n\n[0078]The finely pulverized powder particles ride an upward gas flow so as to be introduced into a classification rotor. Then, the powder particles are classified by the classification rotor. Coarse powder particles cannot go out of the classification rotor and the coarse powder particle are pulverized again in the pulverizer. Those powder particles that have been pulverized to a particle diameter less than or equal to a pre-determined particle diameter are introduced into the classifier main body of the cyclone classifier. In the classifier main body, relatively large powder particles having a particle diameter equal to or greater than the predetermined particle diameter are deposited into the collection tank provided in the bottom, while super fine powder particles are discharged through a discharge pipe along with the inert gas flow.\n\n[0079]In the present embodiment, a slight amount of oxygen (20000 ppm or less by volume; e.g., about 10000 ppm by volume) is mixed with the inert gas introduced into the jet mill. In this way, the surface of the finely pulverized powder is oxidized to an appropriate degree so that rapid oxidization/heat generation does not occur when the finely pulverized powder contacts the air atmosphere.\n\n[0080]It is believed that oxidization of the powder particle surface plays an important roll in the diffusion of Y from the main phase into the grain boundary phase in the sintering process. According to a study by the present inventors, it is preferred that the amount of oxygen in the powder is adjusted to be in the range of 2000 to 8000 ppm (by weight).\n\n[0081]As described above, the hydrogen pulverization process produces a coarsely pulverized powder whose particle surface is very likely to be oxidized. As a result, a finely pulverized powder made from the hydrogen-treated powder provides a preferable effect upon the Y diffusion from the crystal grain into the grain boundary.\n\n[0082]Moreover, in order to diffuse Y from the inside of the particles into the grain boundary phase, it is preferred that the average particle diameter of the powder (FSSS particle size) is 5 μm or less, more preferably, 4 μm or less. When the particle diameter is greater than 5 μm, Y needs to diffuse over an excessive distance, thereby increasing the amount of Y remaining in the crystal grains (main phase), and thus decreasing the magnetization.\n\n[0083]The pulverizer is not limited to a jet mill, but may be an attritor or a ball mill.\n\nPress-Compaction\n\n[0084]In the present embodiment, a lubricant in an amount of 0.3 wt %, for example, is added and mixed in the magnetic powder obtained as described above in a rocking mixer so as to cover the surface of the alloy powder particles with the lubricant. The lubricant may be a lubricant obtained by diluting a fatty acid ester with a petroleum solvent. In the present embodiment, methyl caproate is used as a fatty acid ester and isoparaffin as a petroleum solvent. The weight ratio between methyl caproate and isoparaffin is, for example, 1:9. Such a liquid lubricant covers the surface of the powder particles, thereby preventing the particles from being oxidized while improving the orientation property during a pressing process and facilitating the removal of the compact following a pressing process (by making the density of the compact uniform so as to prevent the compact from being broken apart or cracked).\n\n[0085]The type of lubricant is not limited to the above. Instead of methyl caproate, the fatty acid ester may be, for example, methyl caprylate, methyl laurylate, methyl laurate, or the like. The solvent may be a petroleum solvent such as isoparaffin, a naphthenic solvent, or the like. The lubricant may be added at any timing, i.e., before the fine pulverization by the jet mill, during the fine pulverization or after the fine pulverization. A solid dry lubricant such as zinc stearate may be used instead of, or in addition to, a liquid lubricant.\n\n[0086]The magnetic powder obtained as described above is then compacted in an orientation magnetic field by using a known compacting apparatus.\n\nSintering Process\n\n[0087]A step of maintaining the powder compact at a temperature in the range of 650 to 1000° C. for 10 to 24 minutes, and a step of further sintering the powder compact at a higher temperature (e.g., 1000 to 1100° C.), are performed successively. During the sintering process, particularly, during a period in which a liquid phase is produced (while the temperature is in the range of 650 to 1000° C.), Nd starts to be melted, and mutual diffusion occurs between Y, existing primarily in the main phase crystal grains, and Nd, existing in the grain boundary phase. Specifically, Y diffuses from the main phase into the grain boundary phase under a diffusion-driving force that is in proportion to the concentration gradient between the inside of the main phase crystal grains and the grain boundary phase (corresponding to “the difference between the Y concentration in the main phase and that in the liquid phase”), whereas Nd diffuses in the opposite direction, i.e., from the grain boundary phase into the main phase.\n\n[0088]Since Y having diffused into the grain boundary phase combines with oxygen existing in the grain boundary phase so as to be turned into an oxide and consumed, the Y concentration gradient to be the diffusion-driving force is maintained. Since Y more stably forms an oxide than Nd, Y diffuses from the main phase into the liquid phase while Nd diffuses from the liquid phase into the main phase.\n\n[0089]In order to sufficiently diffuse Y into the grain boundary phase so that a large amount of Nd existing in the grain boundary phase is taken into the main phase, it is preferred that the amount of oxygen in the powder is controlled in the range of 2000 to 8000 ppm (by weight) as described above. When the amount of oxygen is less than 2000 ppm (by weight), Y is not sufficiently diffused into the grain boundary phase, leaving a large amount of Y in the main phase, thereby decreasing the magnetization. When the amount of oxygen is greater than 8000 ppm (by weight), rare-earth elements are consumed by oxide formation, thereby reducing the amount of rare-earth element that contributes to the liquid phase formation. In such a case, the density of the sintered body decreases, or the magnetic properties deteriorate. Preferably a thin oxide layer is formed on the powder particle surface. By sintering the powder in which the amount of oxygen is controlled as above, a sintered magnet whose oxygen concentration is in a range 2000 to 8000 ppm by weight can be produced.\n\n[0090]When the amount of residual hydrogen existing in the alloy after the hydrogen pulverization is too high, a sintering process does not proceed appropriately. However, according to this embodiment, the amount of hydrogen in the powder particle can be reduced into a range from 5 to 100 ppm by weight during the heat treatment at a temperature of 650 to 1000° C.\n\n[0091]Also in a case where La and/or Sc are added, it is possible to suppress the consumption, in the grain boundary phase, of a rare-earth element, such as Nd or Pr, that is indispensable', '发明背景 \n\n [0001] 1.发明领域 \n\n [0002] R-Fe-B稀土磁体及其制造方法技术领域本发明涉及一种R-Fe-B稀土磁体及其制造方法。 \n\n [0003] 2.相关技术描述 \n\n [0004] 在现有技术中,钕(Nd)和/或ase(Pr)主要被用作R-Fe-B稀土磁体的稀土元素R,因为使用这些稀土元素提供了特别期望的 磁性。 \n\n [0005] 近年来,R-Fe-B磁体的应用范围不断扩大,Nd和Pr的消耗量迅速增加。 因此,强烈需要提高作为珍贵的自然资源的Nd和Pr的利用效率,并降低R-Fe-B磁体的材料成本。 \n\n [0006] 减少Nd和Pr消耗的最简单方法是用另一种稀土元素替代Nd和Pr,稀土元素的功能类似于Nd和Pr。 然而,在本领域中已知,当将除了Nd和Pr以外的稀土元素添加到R-Fe-B稀土磁体中时,诸如磁化的磁性能劣化。 因此,在R-Fe-B系稀土类磁铁中很少使用Nd和Pr以外的稀土类元素。 \n\n [0007] 例如,当通过用钇(Y)将稀土元素与Nd一起添加到材料中来熔化和固化材料合金来制造R-Fe-B合金时,Y进入合金的主相。 合金。  R-Fe-B合金的主相主要具有四方R 2 铁 14 B型晶体结构。 在本领域中已知,当R为Nd和/或Pr(以及((Dy),ter(Tb)等代替Nd和/或Pr的一部分)时,表现出最高的磁化强度。 当R在R中 2 铁 14 形成主相的B晶体结构被稀土元素例如Y部分或全部取代,磁化强度显着降低。 \n\n [0008] 在Proc的报告中公开了一种具有铈(Ce)的稀土硼铁磁体,稀土元素如Nd和Pr被添加到其中。  16th国际米兰 稀土磁体及其应用研讨会,2000年。P99。 根据报告,剩余磁通密度或剩磁B r  由于添加铈,线性降低。 \n\n [0009] 鉴于以上情况,认为应尽可能避免添加除Nd,Pr,Dy和Tb以外的任何磁化强度减小的稀土元素R。 \n\n [0010] Nd和/或Pr不仅形成主相,而且还存在于晶界相中,并且在烧结过程中起形成液相的重要作用。 但是,存在于晶界相中的Nd和/或Pr形成非磁性相,无助于磁化的提高。 换句话说,Nd和/或Pr的一部分由于非磁性相的形成而总是被消耗,不能直接有助于磁性。 \n\n [0011] 为了有效地使用Nd和/或Pr以便有效地获得期望的磁性能,优选将Nd和/或Pr中的大部分引入R中。 2 铁 14 B晶相。 然而,在现有技术中不存在用于实现此目的的技术。 \n\n [0012] 在现有技术中,主相中的一部分Fe具有四方R 2 铁 14 为了提高R-Fe-B系稀土类磁铁的耐热性,通过在材料合金中添加Co,将B的晶体结构置换为钴(Co)。 当一部分Fe被Co取代时,主相的居里温度升高,从而即使在更高的温度下也可以表现出期望的磁性。 \n\n [0013] 近年来,在一些领域中,例如用于汽车中的电动机,需要具有更高性能的磁体,因此需要使用具有更高性能的R-Fe-B稀土磁体。 比铁氧体磁铁 然而,R-Fe-B稀土磁体的耐热性不足以在高温环境下使用,例如在汽车中的电动机所经历的环境下。 因此,强烈需要进一步提高R-Fe-B稀土类磁体的耐热性。 \n\n [0014] 可以认为,为了进一步提高R-Fe-B系稀土类磁铁的耐热性,优选添加更多的Co。然而,添加到材料合金中的Co不仅在a的主相中代替Fe。 烧结磁体,但也存在于晶界相中形成NdCo 2  化合物和/或PrCO 2  化合物。 因此,添加的一部分Co不用于代替Fe,而浪费在晶界相中。 另一个问题是上述化合物是铁磁性物质,因此降低了烧结磁体的矫顽力。 因此,简单地增加Co的添加量并不是在主相中替代Fe的有效方法,并且这样做实际上可以降低R-Fe-B稀土磁体的矫顽力。 \n\n 发明内容 \n\n [0015] 因此,本发明的目的是提供一种具有理想的磁性的稀土类烧结磁体,其中减少了在晶界相中形成非磁性相的Nd和/或Pr的量,并提供了一种制备这种磁体的方法。 相同。 \n\n [0016] 本发明的另一个目的是提供一种稀土烧结磁体及其制造方法,其中稀土元素被有效地吸收到主相中,从而表现出理想的磁性能。 \n\n [0017] 本发明的稀土类烧结磁铁的组成为(R1 x + R2 y T 100 x yz 问 z  (R1是选自除La(镧),Y(钇)和Sc(scan)以外的所有稀土元素中的至少一种元素; R2是选自由La,Y和L组成的组中的至少一种元素。  Sc; T是选自由所有过渡元素组成的组中的至少一种元素;并且Q是选自由B和C组成的组中的至少一种元素,并且包括Nd的晶粒作为主相。 2 铁 14 B.晶体结构,其中:摩尔分数x,y和z分别满足8≤x≤18at%,0.1≤y≤3.5at%和3≤z≤20at%。  R 2的浓度在至少一部分晶界相中比在晶粒中高。 \n\n [0018] 在一个优选的实施方案中,摩尔分数x和y满足0.01≤y/(x + y)≤0.23。 \n\n [0019] 在一个优选的实施方案中,R 2至少包括Y(钇)。 \n\n [0020] 在一个优选的实施方案中,氧的量为2000重量ppm至8000重量ppm。 \n\n [0021] 根据本发明的稀土烧结磁体的制造方法包括以下步骤:制备具有(R1)组成的稀土合金粉末。 x + R2 y T 100 x yz 问 z  (R1是选自除La,Y和Sc以外的所有稀土元素组成的组中的至少一种元素; R2是选自La,Y和Sc组成的组中的至少一种元素; T是选自以下的至少一种元素 Q为选自B和C的至少一种元素,其中摩尔分数x,y和z满足8≤x≤18at%,0.1≤y≤3.5at  %和3≤z≤20at%; 烧结稀土合金粉末,其中R 2存在于Nd的主相晶粒中 2 铁 14 烧结前的稀土类合金中的B晶体结构在烧结步骤中扩散到晶界相中,因此R 2的浓度在至少一部分晶界相中比在晶粒中高。 \n\n [0022] 在一个优选的实施方案中,稀土合金粉末中所含的氧的量在按重量计2000ppm至按重量计8000ppm的范围内。 \n\n [0023] 在优选的实施方式中,在烧结前的稀土类合金中存在于烧结前的晶界相中的R 1扩散到主相晶粒中。 \n\n [0024] 在一个优选的实施方案中,在烧结步骤中在晶界相中形成R 2的氧化物。 \n\n [0025] 在一个优选的实施方式中,烧结步骤包括将稀土合金粉末在650至1000℃的温度下保持10至240分钟的第一步骤,以及进一步烧结稀土的第二步骤。 合金粉末的温度高于第一步中使用的温度。 \n\n [0026] 在优选的实施方式中,稀土类合金粉末是通过在控制氧浓度的气体中进行粉碎而得到的。 \n\n [0027] 在优选的实施方式中,稀土类合金粉末是通过在氧气浓度被控制为20000ppm以下的气体中进行粉碎而得到的。 \n\n [0028] 在优选的实施方式中,稀土类合金粉末的平均粒径(FSSS粒径)为5μm以下。 \n\n [0029] 另一种本发明的稀土烧结磁体具有(R1 x + R2 y )(T1 p + T2 q )  100 xy-z-r 问 z 中号 r  (R1是选自除La(镧),Y(钇)和Sc(scan)以外的所有稀土元素中的至少一种元素; R2是选自由La,Y和L组成的组中的至少一种元素。  Sc; T1为Fe; T2为选自除Fe以外的所有过渡元素组成的组中的至少一种元素; Q为选自B和C组成的组中的至少一种元素; M为选自上述元素中的至少一种元素。  (由Al,Ga,Sn和In组成的组),并且包括Nd的晶粒作为主相。 2 铁 14 B晶体结构,其中:摩尔分数x,y,z,p,q和r满足8≤x+y≤18at%,0 [0030] 在一个优选的实施方案中,摩尔分数y满足0.5 [0031] 在一个优选的实施方案中,R 2至少包括Y(钇)。 \n\n [0032] 在一个优选的实施方案中,T 2至少包括Co(钴)。 \n\n [0033] 在一个优选的实施方案中,氧的量为2000重量ppm至8000重量ppm。 \n\n [0034] 生产稀土烧结磁体的另一种发明方法包括以下步骤:制备具有(R1)组成的稀土合金粉末。 x + R2 y )(T1 p + T2 q )  100 xy-z-r 问 z 中号 r  (R1是选自除La(镧),Y(钇)和Sc(scan)以外的所有稀土元素中的至少一种元素; R2是选自由La,Y和L组成的组中的至少一种元素。  Sc; T1为Fe; T2为选自除Fe以外的所有过渡元素组成的组中的至少一种元素; Q为选自B和C组成的组中的至少一种元素; M为选自上述元素中的至少一种元素。  (由Al,Ga,Sn和In组成的组),并且包括Nd的晶粒作为主相 2 铁 14 B晶体结构,其中:摩尔分数x,y,z,p,q和r满足8≤x+y≤18at%,0 2 铁 14 烧结前的稀土类合金中的B晶体结构在烧结步骤中扩散到晶界相中,因此R 2的浓度在至少一部分晶界相中比在晶粒中高。 \n\n [0035] 在一个优选的实施方案中,稀土合金粉末中所含的氧的量在按重量计2000ppm至按重量计8000ppm的范围内。 \n\n [0036] 在优选的实施方式中,在烧结前的稀土类合金中存在于烧结前的晶界相中的R 1扩散到主相晶粒中。 \n\n [0037] 在一个优选的实施方案中,在烧结步骤中在晶界相中形成R 2的氧化物。 \n\n [0038] 在一个优选的实施方式中,烧结步骤包括将稀土合金粉末在650至1000℃的温度下保持10至240分钟的第一步骤,以及进一步烧结稀土的第二步骤。 合金粉末的温度高于第一步中使用的温度。 \n\n [0039] 在优选的实施方式中,稀土类合金粉末是通过在控制氧浓度的气体中进行粉碎而得到的。 \n\n [0040] 在优选的实施方式中,稀土类合金粉末是通过在氧气浓度被控制为20000ppm以下的气体中进行粉碎而得到的。 \n\n [0041] 在优选的实施方式中,稀土类合金粉末的平均粒径(FSSS粒径)为5μm以下。 \n\n 附图的简要说明 \n\n [0042] 图。 参照图1A至图1B。 图1C是主相晶粒和晶界相的示意图。 附图说明图1A示出了材料合金的微观结构。 图1B示出了烧结过程中的微观结构,图1B示出了烧结过程中的微观结构。 图1C示出了烧结磁体的微观结构; \n\n [0043] 图。 图2是表示可以适用于本发明的氢粉碎工序中的温度分布的一个例子的图。 \n\n [0044] 图。 图3是表示Y,La和Ce的含量与组成为Nd的烧结磁铁的剩磁通密度Br之间的关系的图。 11.8 回覆\' 2.4 铁 79.7 乙 6.1  (其中RE\'是Y,La或Ce); \n\n [0045] 图。 图4A是烧结磁铁A的后向散射电子像(Nd 11.8 ÿ 2.4 铁 79.7 乙 6.1 ), 图。 图4B是烧结磁铁A的Y映射图。 图4C是表示烧结磁铁A的组织的示意图。 \n\n [0046] 图。 图5A是烧结磁铁B(Nd 11.8 啦 2.4 铁 79.7 乙 6.1 ), 图。 图5B是烧结磁铁B的La映射图。 图5C是表示烧结磁铁B的组织的示意图。 \n\n [0047] 图。 图6A是烧结磁铁C(Nd 11.8 策 2.4 铁 79.7 乙 6.1 ), 图。 图6B是烧结磁铁C的Ce映射图。 图6C是表示烧结磁铁C的组织的示意图。 \n\n [0048] 图。 参照图7A至图7B。 图7D是主相晶粒和晶界相的示意图。 图7A示出了材料合金的微观结构。 7 B和图。 图7C分别示出了烧结过程中的微观结构。 图7D示出了烧结磁体的微观结构。 \n\n [0049] 图。 图8是表示居里点(居里温度),Y含量和Co含量之间的关系的图,图的纵轴表示居里温度,横轴表示Y含量。 \n\n [0050] 图。 图9是示出矫顽力H之间的关系的图。  cj Y含量和Co含量,曲线图的纵轴表示矫顽力,横轴表示Co含量。 \n\n [0051] 图。 图10A是材料合金的背散射电子图像,图10B是材料合金的背散射电子图像。 参照图10B至图10B。 图10F分别是Nd,Dy,Co,Fe和Y的材料合金的映射图。 和 \n\n [0052] 图。 图11A是烧结磁铁的反向散射电子像。 参照图11B至图11B。 图11F分别是Nd,Dy,Co,Fe和Y的烧结磁体的映射图像。 \n\n 具体实施方式 \n\n [0053] 在本发明的第一实施方案中,除了Nd之外,还添加了Y,La和/或Sc,并且这些元素集中在晶界相中,使得否则会消耗一部分Nd用于形成Nd。 晶界相中的非磁性相从晶界相扩散到主相晶粒中。 这样,Nd被有效地用作主相的组成元素(Nd 2 铁 14 B相)提供强磁性。 术语“钕 2 铁 14 本文所用的“ B相”包括其中Nd的一部分被Pr,Dy和/或Tb取代的相。 \n\n [0054] 在本发明的稀土磁体中,Nd中存在大量的Nd。 2 铁 14 B相是主相,而Y,La和/或Sc在晶界相中扮演Nd的角色。 因此,可以在实质上不降低磁化的情况下减少Nd(Pr)的使用量。 \n\n [0055] 根据本发明人进行的实验,在诸如锭铸合金或带铸合金的材料合金阶段,Y主要存在于主相中,从而降低了磁化强度。 实验还表明,由于采用铸锭法的冷却速度(小于10℃),铸锭合金主相中的Y浓度高于带钢铸造合金中的Y浓度。 2 °C / sec)低于带钢铸造法(10 2 °C /秒或更高)。 本发明的特征在于,在制造这种材料合金的粉末之后,通过烧结工艺将主相中的Y集中在晶界相中。 \n\n [0056] 首先,将参考图2描述本发明的特征。 参照图1A至图1B。 1 C。 \n\n [0057] 图。 参照图1A至图1B。 图1C是主相晶粒和晶界相的示意图,示出了Nd和Y如何通过烧结过程从材料合金阶段扩散和分布。 \n\n [0058] 首先,如图2中所示, 如图1A所示,在母合金阶段,Y和Nd都被带入Nd的晶粒中 2 铁 14 B,并且Y和Nd存在于Nd2Fe14B的稀土元素的位置。 \n\n [0059] 当通过铸锭法制造母合金时,晶界相中的Y浓度低于晶粒中的Y浓度,并且在晶界相中形成富Nd相。 当通过条带铸造法制造母合金时,在晶界中也存在诸如Y的R 2,但这是由于非平衡状态。 存在于晶界中的R 2在后续步骤中也具有与存在于主相中的R 2相同的效果。 \n\n [0060] 根据本发明,Y通过烧结过程从晶粒内部(主相)扩散到晶界相中。 如图3所示,在烧结过程中,在晶界相中形成了Y的氧化物。 1 B.此时,Nd向相反方向扩散。 结果,晶界相中的Y浓度增加到大于晶粒中的Y浓度。 结果,如图2所示,主相中包含的Y的量减少。  1C,从而增加了磁化强度。 \n\n [0061] 据信,为了实现如上所述的Y和Nd的相互扩散,在烧结过程中需要在晶界相中存在适量的氧。 这是因为本发明利用Y比Nd更稳定地与氧结合形成氧化物的事实,如上所述地引起扩散。 为了将氧引入到晶界相中,例如,优选在粉碎步骤中使粉末颗粒表面略微氧化。 \n\n [0062] 现在将更详细地描述本发明的第一实施例。 \n\n 材质:铝合金 \n\n [0063] 首先,组成为(R1 x + R2 y T 100 x yz 问 z  准备好了。 组成中,R 1为选自除Y(钇),La(镧)和Sc(scan)以外的所有稀土元素中的至少一种元素。  R 2为选自La,Y和Sc中的至少一种元素。  T是选自所有过渡元素中的至少一个元素;  Q是选自B和C的至少一种元素; 摩尔分数x,y和z分别满足8≤x≤18at%,0.1≤y≤3.5at%和3≤z≤20at%。 \n\n [0064] 例如,可以使用铸锭法或淬火法(带式铸造法或离心铸造法)来制造这种合金。 作为示例,现在将描述通过使用带铸法制造材料合金的方法。 \n\n [0065] 首先,将具有上述组成的合金在氩气气氛中以高频熔融工艺进行熔融以获得熔融合金。 在将熔融合金保持在1350℃之后,通过单冷辊法将熔融合金快速冷却,从而获得例如厚度约为0.3mm的薄片状的固化合金。 冷却条件包括例如辊圆周速度为约1m / sec,冷却速率为500℃/ sec和过冷度为2000℃。如此获得的快速冷却的合金被粉碎成薄片。 在氢粉碎过程之前具有1至10mm的尺寸。 例如,在美国专利No.5,837,641中公开了一种通过带式铸造法生产原材料合金的方法。 美国专利号5,383,978,其公开内容通过引用结合于此。 \n\n [0066] 如上所述,Y存在于Nd中 2 铁 14 B主相处于这种材料的合金阶段。 \n\n 第一步粉碎 \n\n [0067] 将粗粉碎成薄片的原料合金填充到多个原材料包(例如,由不锈钢制成)中,并安装在架子上。 然后,将其上装有原料包的架子插入氢气炉中。 然后,关闭氢炉,开始氢脆化处理(以下也称为“氢粉碎处理”)。 氢粉碎处理根据图2所示的温度曲线进行。  2,举例。 在图的示例中, 参照图2,抽空过程I进行0.5小时,然后吸氢过程II进行2.5小时。 在氢吸留工序II中,向炉内供给氢气,以使炉内成为氢气气氛。 此时,氢压力优选为约200至约400kPa。 \n\n [0068] 然后,在约0至约3Pa的减压气氛下进行脱氢处理III 5.0小时,之后,在向炉内供给氩气的同时进行原料合金冷却处理IV 5.0小时。 \n\n [0069] 在冷却过程IV中,虽然炉中的气氛温度相对较高(例如,大于100℃),但是通过将常温下的惰性气体供应到氢炉中来冷却原料合金。 然后,在材料合金温度降低到相对较低的水平(例如,100°C或更低)之后,供应已冷却至低于正常温度(例如,比室温低约10°C)的惰性气体。 进入氢气炉。 就冷却效率而言,优选以此方式冷却材料合金。 所供应的氩气的量可以设置为大约10至大约100Nm。 3 /分钟。 \n\n [0070] 优选地,在材料合金的温度降低到大约20至大约250℃之后,通常是常温(比室温低50℃或更低的温度)的惰性气体。 供应到氢气炉中,使材料合金的温度达到常温水平。 这样,可以避免在打开氢炉时在炉中发生结露。 当由于结露而在炉中存在水分时,水分在抽空过程中冻结/蒸发,从而使得难以增加真空度并增加抽空过程I所需的时间。 \n\n [0071] 优选将通过氢粉碎法得到的粗粉碎合金粉末在惰性气氛下从氢炉中取出,以使粗粉碎粉末不与大气接触。 以这种方式,防止了粗粉碎的粉末被氧化并产生热量,并且改善了磁体的磁性能。 然后,将粗粉碎的材料合金填充到多个原料包中并安装在架子上。 \n\n [0072] 通过氢粉碎处理,将稀土合金粉碎至约0.1至几毫米的大小,平均粒径为500μm或更小。 优选在氢粉碎处理之后,将脆化的材料合金裂化成更细的粉末,并通过使用诸如旋转冷却器的冷却装置进行冷却。 当在相对较高的温度下取出材料时,可以相应地增加使用旋转冷却器等的冷却过程的持续时间。 \n\n [0073] 通过氢粉碎过程,由于氢的吸附,原料合金在其富含R(稀土金属)的部分破裂。 结果,大量的稀土金属暴露在粗粉碎粉末的表面上,并且在这种状态下的粗粉碎粉末很可能被氧化。 \n\n 第二次粉碎过程 \n\n [0074] 接着,将第一粉碎工序中制得的粗粉碎粉通过使用喷射式粉碎机进行微粉碎。 旋风分级机连接到本实施例中使用的气流粉碎机。 \n\n [0075] 喷射式粉碎机接收在第一粉碎工序中被粗粉碎的稀土类合金(粗粉碎粉)的供给,在粉碎机中将稀土类合金粉碎。 在粉碎机中粉碎的粉末通过旋风分级机收集在收集罐中。 \n\n [0076] 现在将更详细地描述该过程。 \n\n [0077] 将粗粉碎的粉末引入粉碎机中,并通过从内部喷嘴注入的惰性气体的快速流动在粉碎机中将其粗抛。 因此,粗粉碎的粉末与快速气流一起在粉碎机中飞来飞去,从而通过被粉碎的粉末颗粒之间的碰撞而被精细地粉碎。 \n\n [0078] 细粉碎的粉末颗粒沿向上的气流流动,从而被引入分级转子中。 然后,通过分级转子将粉末颗粒分级。 粗粉颗粒不能从分级转子中出来,粗粉颗粒再次在粉碎机中粉碎。 将已被粉碎成小于或等于预定粒径的那些粉末颗粒引入旋风分级器的分级器主体中。 在分级机主体中,将具有等于或大于预定粒径的相对较大的粉末颗粒沉积到设置在底部的收集槽中,同时将超细粉末颗粒与惰性气体一起通过排出管排出。 流。 \n\n [0079] 在本实施方式中,将少量的氧气(20000ppm以下,例如约10000ppm以下)与导入喷射式粉碎机的惰性气体混合。 以此方式,细粉的表面被氧化至适当的程度,使得当细粉接触空气时不会发生快速的氧化/发热。 \n\n [0080] 可以认为,在烧结过程中,粉末颗粒表面的氧化在Y从主相向晶界相的扩散中起重要作用。 根据本发明人的研究,优选将粉末中的氧的量调节为2000至8000ppm(重量)。 \n\n [0081] 如上所述,氢粉碎过程产生了其颗粒表面很可能被氧化的粗粉碎粉末。 结果,由氢处理的粉末制成的细粉对Y从晶粒向晶界的扩散提供了优选的效果。 \n\n [0082] 此外,为了使Y从颗粒内部扩散到晶界相中,优选粉末的平均粒径(FSSS粒径)为5μm以下,更优选为4μm以下。 当粒径大于5μm时,Y需要扩散过大的距离,从而增加了残留在晶粒(主相)中的Y的量,从而降低了磁化强度。 \n\n [0083] 粉碎机不限于喷射磨,而可以是磨碎机或球磨机。 \n\n 压实 \n\n [0084] 在本实施方式中,例如在摇动混合器中,将例如0.3重量%的润滑剂添加至如上所述获得的磁性粉末中并进行混合,以用润滑剂覆盖合金粉末颗粒的表面。 润滑剂可以是通过用石油溶剂稀释脂肪酸酯而获得的润滑剂。 在本实施方式中,己酸甲酯用作脂肪酸酯,异链烷烃用作石油溶剂。 己酸甲酯与异链烷烃之间的重量比为例如1:9。 这样的液体润滑剂覆盖粉末颗粒的表面,从而防止颗粒被氧化,同时提高了压制过程中的取向性,并促进了压制过程之后的压块的去除(通过使压块的密度均匀,从而 以防止压块破碎或破裂)。 \n\n [0085] 润滑剂的类型不限于上述。 代替己酸甲酯,脂肪酸酯可以是例如辛酸甲酯,月桂酸甲酯,月桂酸甲酯等。 溶剂可以是石油溶剂,例如异链烷烃,环烷溶剂等。 润滑剂可以在任何时间添加,即在通过气流粉碎机进行细粉碎之前,在细粉碎期间或在细粉碎之后。 可以使用固体干润滑剂例如硬脂酸锌代替液体润滑剂或除液体润滑剂之外使用。 \n\n [0086] 然后通过使用已知的压紧设备将如上所述获得的磁性粉末在定向磁场中压紧。 \n\n 烧结工艺 \n\n [0087] 将粉末压块在650至1000℃的温度下保持10至24分钟的步骤,以及进一步在较高温度(例如1000至1100℃)下烧结粉末压块的步骤, 依次执行。 在烧结过程中,特别是在产生液相的时期(温度在650至1000℃的范围内)期间,Nd开始熔化,并且Y之间发生相互扩散,主要存在于 主相晶粒和Nd存在于晶界相中。 具体地,Y在与主相晶粒的内部和晶界相之间的浓度梯度成比例的扩散驱动力下从主相扩散到晶界相(相当于“ Y之差 主相和液相中的浓度”),而Nd沿相反方向扩散,即从晶界相扩散到主相中。 \n\n [0088] 扩散到晶界相中的Y与存在于晶界相中的氧结合而成为氧化物而被消耗,因此,维持了作为扩散驱动力的Y浓度梯度。 由于Y比Nd更稳定地形成氧化物,因此Y从主相扩散到液相中,而Nd从液相扩散到主相中。 \n\n [0089] 为了使Y充分扩散到晶界相中,从而使存在于晶界相中的大量Nd进入主相,优选将粉末中的氧量控制在2000〜200nm的范围内。 如上所述,为8000ppm(重量)。 当氧的量小于2000ppm(重量)时,Y没有充分扩散到晶界相中,在主相中留下大量的Y,从而降低了磁化强度。 当氧的量大于8000ppm(按重量计)时,稀土元素通过氧化物形成而被消耗,从而减少了有助于液相形成的稀土元素的量。 在这种情况下,烧结体的密度降低,或者磁性降低。 优选地,在粉末颗粒表面上形成薄的氧化物层。 通过烧结氧量如上述那样控制的粉末,可以制造氧浓度为2000〜8000重量ppm的烧结磁铁。 \n\n [0090] 氢粉碎后,合金中残留的氢过多时,不能适当地进行烧结。 然而,根据该实施方案,在650至1000℃的温度下的热处理期间,粉末颗粒中的氢的量可以减少至5至100重量ppm的范围。 \n\n [0091] 同样在添加La和/或Sc的情况下,可以抑制在晶界相中对主相必不可少的稀土元素如Nd或Pr的消耗。 主相的高磁化强度,从而提供表现出期望的磁性的稀土类烧结磁铁。 \n\n 例 \n\n [0092] 使用如上所述的本发明的制造方法,由添加有稀土元素的Y,La和Ce以及稀土元素的Nd的材料合金来制造烧结磁铁。 材料合金是通过铸锭法制成的(冷却速度:小于10 2 ℃/秒)。 \n\n [0093] 图。 图3示出Y,La和Ce含量与剩磁通密度或剩磁Br之间的关系。 每个烧结磁铁的成分为Nd 11.8 回覆\' 2.4 铁 79.7 乙 6.1,  RE\'是Y,La或Ce。 \n\n [0094] 从图可以看出,  3,当添加Ce作为RE\'时,B r  随着Ce含量的增加线性降低。 相反,当添加Y或La作为RE\'时,B基本上没有减少。 r  在Y或La含量为约3.5at%或更低的区域中观察到。 特别是,当添加Y时,B的减少 r  γ非常小,表示作为添加元素,Y比La更优选。 \n\n [0095] 从图5的图表可以做出以下假设。 3 。 当RE\'含量为3.5at%以下时,Y或La存在于晶界相中,并且元素Y和La基本上都不进入主相,因此磁化强度不会降低。 当RE′的含量大于3.5at%时,过量的Y或La不能扩散到晶界相中,因此包含在主相中,由此磁化强度的降低明显地处于明显水平。 在Ce的情况下,随着Ce含量的增加,磁化强度线性降低。 认为这是因为即使少量的Ce也被带入主相。 \n\n [0096] 然后,通过使用EPMA(电子探针微量分析仪)分别观察具有以下组成的烧结磁体A至C的微观结构。 \n\n [0097] \n\n     烧结磁铁A:钕 11.8 ÿ 2.4 铁 79.7 乙 6.1   烧结磁铁B:钕 11.8 啦 2.4 铁 79.7 乙 6.1   烧结磁铁C:钕 11.8 策 2.4 铁 79.7 乙 6.1  \n\n [0098] 图。 请参照图4A至图4。 图4C是分别示出磁体A的微观结构的背向散射电子图像,荧光X射线图像和示意图。 参照图5A至图5B。 5 C和图。 参照图6A至图6。 图6C分别是用于磁体B和C的磁体。 在图1中所示的。 如图4A所示。 5 A和图。 在图6A中,亮区域表示晶界相,暗区域表示主相。 如图1的荧光X射线图像中所示, 4 B和图。 在图5B中,Y和La以大量且基本均匀的量存在于晶界相中,这表明Y和La已经与主相分离并集中在晶界相中。 相反,如图3所示, 如图6B所示,Ce在烧结磁体上基本均匀地存在,并且未观察到Ce在晶界相中的浓度。 \n\n [0099] 根据本发明人进行的各种实验,优选组合物中的摩尔分数x和y(R1 x + R2 y T 100 x yz 问 z  满足0.01≤y/(x + y)≤0.23。 \n\n 实施例2 \n\n [0100] 现在将描述本发明的第二实施例。 在本实施例中,除了Nd和/或Pr之外,还添加了Y,La和/或Sc,并且这些元素集中在晶界相中,使得一定量的过渡金属例如Co会被添加。 在晶界相中形成铁磁性化合物所消耗的能量被吸收到主相晶粒中。 这样,主相中的铁(Nd 2 铁 14 提供强磁性的B相有效地被Co等取代。 \n\n [0101] 如果在本发明中添加Co,则Nd中存在大量的Co。 2 铁 14 B期,这是主要阶段。 相反,如果如现有技术那样大量添加Co而不添加Y,La或Sc,则在晶界相中也存在大量Co,从而在晶界相中形成铁磁性化合物。 如上所述,当大量铁磁化合物(例如NdCo) 2  由于在晶界相中形成Cu,因此不仅减少了有助于主相的居里温度上升的Co量,而且整体上降低了磁体的矫顽力。 \n\n [0102] 然而,在本发明中,Y,La和/或Sc集中在晶界相中,降低了Co在晶界相中的浓度,从而Nd 3 比NdCo更可能产生Co 2 。 自钕 3 Co是非磁性化合物,它不会降低烧结磁体的矫顽力。 \n\n [0103] 此外,在本发明中,由于Y,La和/或Sc集中在晶界相中,因此有效地将大量的Nd或Pr吸收到主相中,从而可以减少Nd的量。 或在不显着降低磁化强度的情况下使用Pr。 \n\n [0104] 根据本发明人进行的实验,在诸如锭铸合金或淬火合金(带铸合金)的材料合金阶段,Y最初存在于主相中,从而降低了磁化强度。 本发明的特征在于,在制造这种材料合金的粉末之后,通过烧结工艺将主相中的Y集中在晶界相中。 \n\n [0105] 接下来,将参考图5描述根据本实施例的磁体的特征。 参照图7A至图7B。 7 D. \n\n [0106] 图。 参照图7A至图7B。 图7D是主相晶粒和晶界相的示意图,示出了Nd,Y和Co如何通过烧结过程从材料合金阶段扩散和分布。 \n\n [0107] 首先,如图2中所示, 如图7A所示,在母合金阶段,Y和Nd都被吸收到主相晶粒中,形成Nd 2 铁 14 B期,这是主要阶段。 晶界相中的Y浓度低于晶粒中的Y浓度,并且在晶界相中形成了富Nd相。  Co存在于主相和晶界相中。 \n\n [0108] 在诸如带钢铸造合金的快速冷却的合金中,由于不平衡状态,诸如Y的R 2也存在于晶界相中。 存在于晶界中的R 2在后续步骤中也具有与存在于主相中的Y相同的作用。 \n\n [0109] 根据本发明,Y通过烧结过程从晶粒内部(主相)扩散到晶界相中,从而在晶界相中产生Y的氧化物。 7 B.此时,Nd向相反方向扩散。 结果,如图8所示,可以将晶界相中的Y浓度增加到大于主相晶粒中的Y浓度,从而减少了主相中包含的Y的量。 如图7C所示,从而增加了磁化强度。 通过Y和Nd的相互扩散,晶界相变成富Y相,Co也进入主相。 \n\n [0110] 据信,为了实现如上所述的Y和Nd(和Co)的相互扩散,在烧结过程中需要在晶界相中存在适量的氧。 这是因为如上所述,本发明引起扩散,并且依赖于以下事实:Y比Nd更稳定地与氧结合形成氧化物。 为了将氧引入到晶界相中,例如,优选在粉碎步骤中使粉末颗粒表面略微氧化。 \n\n [0111] 现在将更详细地描述本发明的第二实施例。 \n\n 材质:铝合金 \n\n [0112] 首先,组成为(R1 x + R2 y )(T1 p + T2 q )  100 xy-z-r 问 z 中号 r  准备好了。 组成中,R 1为选自La(镧),Y(钇)和Sc(scan)以外的所有稀土元素中的至少一种元素。  R 2为选自La,Y和Sc中的至少一种元素。  Ti是Fe; Ti是Fe。  T 2为选自除Fe以外的所有过渡元素中的至少一种元素。  Q是选自B和C的至少一种元素;  M是选自Al,Ga,Sn和In中的至少一种元素。 并且摩尔分数x,y,z,p,q和r满足8≤x+y≤18at%,0 100 -x-y-z-r是满意的。 \n\n [0113] 例如,可以使用铸锭法或淬火法(带式铸造法或离心铸造法)来制造这种合金。 作为示例,现在将描述通过使用带铸法制造材料合金的方法。 \n\n [0114] 首先,将具有上述组成的合金在氩气气氛中以高频熔融工艺进行熔融以获得熔融合金。 在将熔融合金保持在1350℃之后,通过单冷辊法将熔融合金快速冷却,从而获得例如厚度约为0.3mm的薄片状的固化合金。 冷却条件包括例如辊圆周速度为约1m / sec,冷却速率为500℃/ sec和过冷度为200℃。如此获得的快速冷却的合金被粉碎成薄片。 在氢粉碎过程之前具有1至10mm的尺寸。 例如,在美国专利No.5,837,641中公开了一种通过带式铸造法生产原材料合金的方法。  5,383,978。 \n\n [0115] 如上所述,Y存在于Nd中 2 铁 14 B主相处于这种材料的合金阶段。 \n\n 第一步粉碎 \n\n [0116] 将粗粉碎成薄片的原料合金填充到多个原材料包(例如,由不锈钢制成)中,并安装在架子上。 然后,将其上装有原料包的架子插入氢气炉中。 然后,关闭氢气炉并开始氢气粉碎过程。 氢粉碎处理根据图2所示的温度曲线进行。  2,举例。 在图的示例中, 参照图2,抽空过程I进行0.5小时,然后吸氢过程II进行2.5小时。 在氢吸留工序II中,向炉内供给氢气,以使炉内成为氢气气氛。 此时,氢压力优选为约200至约400kPa。 \n\n [0117] 然后,在约0至约3Pa的减压气氛下进行脱氢处理III 5.0小时,之后,在向炉内供给氩气的同时进行原料合金冷却处理IV 5.0小时。 \n\n [0118] 在冷却过程IV中,虽然炉中的气氛温度相对较高(例如,大于100℃),但是通过将常温下的惰性气体供应到氢炉中来冷却原料合金。 然后,在材料合金温度降低到相对较低的水平(例如,100°C或更低)之后,供应已冷却至低于正常温度(例如,比室温低约10°C)的惰性气体。 进入氢气炉。 就冷却效率而言,优选以此方式冷却材料合金。 所供应的氩气的量可以设置为大约10至大约100Nm。 3 /分钟。 \n\n [0119] 优选的是,在材料合金的温度降低至约20至约25℃之后,通常为常温(比室温低5℃以下的温度)的惰性气体。 供应到氢气炉中,使材料合金的温度达到常温水平。 这样,可以避免在打开氢炉时在炉中发生结露。 当由于结露而在炉中存在水分时,水分在抽空过程中冻结/蒸发,从而使得难以增加真空度并增加抽空过程I所需的时间。 \n\n [0120] 优选将通过氢粉碎法得到的粗粉碎合金粉末在惰性气氛下从氢炉中取出,以使粗粉碎粉末不与大气接触。 以这种方式,防止了粗粉碎的粉末被氧化并产生热量,并且改善了磁体的磁性能。 然后,将粗粉碎的材料合金填充到多个原料包中并安装在架子上。 \n\n [0121] 通过氢粉碎处理,将稀土合金粉碎至约0.1至几毫米的大小,平均粒径为500μm或更小。 优选地,在氢粉碎过程之后,将脆化的材料合金研磨成更细的粉末并且通过使用诸如旋转冷却器的冷却装置来冷却。 当在相对较高的温度下取出材料时,可以相应地增加使用旋转冷却器等的冷却过程的持续时间。 \n\n [0122] 大量的Nd暴露在通过氢粉碎工艺制得的粗粉碎粉末的表面上,并且在这种状态下的粗粉碎粉末很可能被氧化。 \n\n 第二次粉碎过程 \n\n [0123] 接着,将第一粉碎工序中制得的粗粉碎粉通过使用喷射式粉碎机进行微粉碎。 旋风分级机连接到本实施例中使用的气流粉碎机。 \n\n [0124] 喷射式粉碎机接收在第一粉碎工序中被粗粉碎的稀土类合金(粗粉碎粉)的供给,在粉碎机中将稀土类合金粉碎。 在粉碎机中粉碎的粉末通过旋风分级机收集在收集罐中。 \n\n [0125] 现在将更详细地描述该过程。 \n\n [0126] 将粗粉碎的粉末引入粉碎机中,并通过从内部喷嘴注入的惰性气体的快速流动在粉碎机中将其粗抛。 因此,粗粉碎的粉末与快速气流一起在粉碎机中飞来飞去,从而通过被粉碎的粉末颗粒之间的碰撞而被精细地粉碎。 \n\n [0127] 细粉碎的粉末颗粒沿向上的气流流动,从而被引入分级转子中。 然后,通过分级转子对粉末颗粒进行分级,并且再次将粗粉末颗粒粉碎。 将已被粉碎成小于或等于预定粒径的那些粉末颗粒引入旋风分级器的分级器主体中。 在分级机主体中,将具有等于或大于预定粒径的相对较大的粉末颗粒沉积到设置在底部的收集槽中,同时将超细粉末颗粒与惰性气体一起通过排出管排出。 流。 \n\n [0128] 在本实施例中,少量氧气(20000ppm或更少,按体积计;例如约10000ppm)与引入喷射磨的惰性气体混合。 以此方式,细粉的表面被氧化至适当的程度,使得当细粉接触空气时不会发生快速的氧化/发热。 \n\n [0129] 可以认为,在烧结过程中,粉末颗粒表面的氧化在Y从主相向晶界相的扩散中起重要作用。 根据本发明人的研究,优选将粉末中的氧的量调节为2000至8000ppm(重量)。 \n\n [0130] 此外,为了使Y从颗粒内部扩散到晶界相中,优选粉末的平均粒径(FSSS粒径)为5μm以下,更优选为4μm以下。 当粒径大于5μm时,Y需要扩散过大的距离,从而增加了残留在晶粒(主相)中的Y的量,从而降低了磁化强度。 \n\n 压实 \n\n [0131] 在本实施方式中,例如在摇动混合器中,将例如0.3重量%的润滑剂添加至如上所述获得的磁性粉末中并进行混合,以用润滑剂覆盖合金粉末颗粒的表面。 润滑剂可以是通过用石油溶剂稀释脂肪酸酯而获得的润滑剂。 在本实施方式中,己酸甲酯用作脂肪酸酯,异链烷烃用作石油溶剂。 己酸甲酯与异链烷烃之间的重量比为例如1:9。 这样的液体润滑剂覆盖粉末颗粒的表面,从而防止颗粒被氧化,同时提高了压制过程中的取向性,并促进了压制过程之后的压块的去除(通过使压块的密度均匀,从而 以防止压块破碎或破裂)。 \n\n [0132] 润滑剂的类型不限于上述。 代替己酸甲酯,脂肪酸酯可以是例如辛酸甲酯,月桂酸甲酯,月桂酸甲酯等。 溶剂可以是石油溶剂,例如异链烷烃,环烷溶剂等。 润滑剂可以在任何时间添加,即在通过气流粉碎机进行细粉碎之前,在细粉碎期间或在细粉碎之后。 可以使用固体干润滑剂例如硬脂酸锌代替液体润滑剂或除液体润滑剂之外使用。 \n\n [0133] 然后通过使用已知的压紧设备将如上所述获得的磁性粉末在定向磁场中压紧。 \n\n 烧结工艺 \n\n [0134] 将粉末压块在650至1000℃的温度下保持10至24分钟的步骤,以及进一步在较高温度(例如1000至1100℃)下烧结粉末压块的步骤, 依次执行。 在烧结过程中,特别是在产生液相的时期(温度在650至1000℃的范围内)期间,Nd开始熔化,并且Y之间发生相互扩散,主要存在于 主相晶粒和Nd主要存在于晶界相中。 具体地,Y在与主相晶粒的内部和晶界相之间的浓度梯度成比例的扩散驱动力下从主相扩散到晶界相(相当于“ Y之差 主相和液相中的浓度”),而Nd沿相反方向扩散,即从晶界相扩散到主相中。 \n\n [0135] 根据该实施例,其中氧的量按重量计在2000ppm至8000ppm的范围内的烧结磁体。 烧结磁铁中的氢量为5〜100重量ppm,这是因为在650〜1000℃的温度下的热处理中,粉末粒子中的残留氢量减少。 \n\n [0136] 扩散到晶界相中的Y与存在于晶界相中的氧结合而成为氧化物而被消耗,因此,维持了作为扩散驱动力的Y浓度梯度。 由于Y比Nd更稳定地形成氧化物,因此Y从主相扩散到液相中,而Nd从液相扩散到主相中。 此时,晶界相变成富Y相,因此Co由于体积比而进入主相,部分地取代了Fe。 \n\n [0137] 为了使Y充分扩散到晶界相中,从而使存在于晶界相中的大量的Nd,Co等成为主相,优选控制粉末中的氧量。 如上所述,其在2000至8000ppm(重量)的范围内。 当氧的量小于2000重量ppm时,Y没有充分扩散到晶界相中,在主相中留下大量的Y,从而降低了磁化强度。 当氧的量大于8000重量ppm时,稀土元素通过氧化物形成而被消耗,从而减少了有助于液相形成的稀土元素的量。 在这种情况下,由于主相比例的降低,烧结密度可能降低,或者磁性能可能降低。 \n\n [0138] 在添加La和/或Sc的情况下,也可以通过将这些元素集中在晶界相中来抑制Co,a等过渡金属元素在晶界相中的消耗。 主相必不可少的稀土元素,例如Nd或Pr。 \n\n 合金成分中每种元素的描述 \n\n [0139] 稀土元素R1可以具体是选自from(Pr),钕(Nd),sa(Sm),g(Gd),ter(Tb),(Dy),中的至少一种元素。  (Ho),(Er),th(TM)和(Lu)。 为了获得足够的磁化度,优选的是,稀土元素R1的50原子%以上由Pr和Nd之一或两者组成。 \n\n [0140] 当稀土元素(R1 + R2)的总量小于8原子%时,由于α-Fe相的析出,矫顽力可能降低。 当稀土元素(R1 + R2)的总量大于18原子%时,除了预期的四方Nd以外,可能析出大量的富含R的第二相。 2 铁 14 B化合物,从而降低磁化强度。 因此,稀土元素(R1 + R2)的总量优选为总量的8at%至18at%。 \n\n [0141] T 2可以适当地使用除Co以外的诸​​如Ni,V,Cr,Mn,Cu,Zr,Nb和Mo的过渡金属元素。 两种过渡金属元素T1和T2之一的T1(即Fe)的含量优选为50at%或更多。 当Fe的含量小于50at%时,Nd的饱和磁化强度 2 铁 14 B化合物本身减少。 在本发明中,R2位于晶界相中,从而将添加的T2有效地吸收到主相中。 由于R 2在晶界相中不再形成大量不希望的化合物,因此与现有技术相比,可以增加R 2的含量。 在本发明中,可以将T 2含量提高至20at%。 \n\n [0142] Q是B和/或C,并且对于稳定沉淀四方Nd必不可少 2 铁 14 B晶体结构。 当Q含量小于3原子%时,R 2 Ť 17  相析出,从而降低矫顽力并显着恶化退磁曲线的矩形度。 当Q含量大于20at%时,磁化度低的第二相析出。 因此,Q含量优选在3至20at%的范围内。 \n\n [0143] 为了进一步提高粉末的磁各向异性,可以使用附加元素M。 附加元素M可以适当地是选自Al,Ga,Sn和In的至少一种元素。 可替代地,可以根本不添加附加元素M。 如果添加,则优选添加的附加元素M的量为3原子%以下。 当要添加的附加元素M的量大于3原子%时,沉淀第二相而不是铁磁相,从而降低了磁化强度。 尽管为了获得具有各向同性的磁粉的目的而不需要附加元素M,但是为了增加固有矫顽力,可以添加Al,Cu,Ga等。 \n\n 例 \n\n [0144] 现在将描述本发明的第二实施例的示例。 \n\n [0145] 在本例中,以(R1 x + R2 y )(T1 p + T2 q )  100 xy-z-r 问 z 中号 r  制备了R 1为Nd和Dy,R 2为Y(钇),T 1为Fe,T 2为Co,Q为B(硼),M为Cu和Al的化合物。 调整每种组合物以使其包含5至10原子%的Nd,4至原子%的Dy,0至5原子%的Y,0至6原子%的Co,6原子%的B,0.2原子%的Cu,  Al为0.4原子%,其余为Fe。 \n\n [0146] 在Ar气氛中将每种合金组合物加热至约1400℃以获得熔融合金,并将熔融合金倒入水冷模具中。 冷却熔融合金以获得厚度为约5mm的凝固合金。 \n\n [0147] 在使固化的合金吸氢之后,将其抽空至大气并加热至约600℃,使其变脆(氢粉碎工序)。 通过氢粉碎处理,由合金组成物得到了粗粉。 通过喷射磨将粗粉碎的粉末细粉碎,从而制成平均粒径(FSSS粒径)为约3.5μm的粉末。 含有约10000ppm(体积)的氧气的氮气用作喷射磨中的粉碎气氛。 \n\n [0148] 将如此获得的每种粉末在100MPa(兆帕)下压制以获得尺寸为55mm×25mm×20mm的压块。 在压制过程中,在垂直于压制方向的方向上施加定向磁场,以使粉末定向。 \n\n [0149] 然后,将粉末在Ar气氛中烧结。 烧结温度为1060℃,烧结时间为约4小时。 \n\n [0150] 评价由此获得的每个烧结磁体的居里点和矫顽力。 \n\n [0151] 图。 图8为示出居里温度(居里点)与Co含量为3at%和6at%的Y含量之间的关系的图。 图。 图9是示出矫顽力H之间的关系的图。  cj Y含量的Co含量为0原子%,1原子%,3原子%和5原子%。 \n\n [0152] 首先,从图2可以看出, 如图8所示,当居里温度随着Y含量从0at%增加而升高时,在一定水平上基本上饱和。  Co含量越高,饱和度越高。 从图2可以确认。 由图8可知,通过添加Y,Co的居里温度上升效果提高。 \n\n [0153] 另一方面, 图9表示以下。 \n\n [0154] 当不添加Y时,矫顽力随着Co含量的增加而迅速降低。 相反,当添加适当量的Y时,可以在不降低矫顽力的情况下增加Co含量。 换句话说,添加Y使得可以增加Co含量以充分提高居里温度,同时避免矫顽力的显着降低。 \n\n [0155] 参考图。 如图9所示,当不添加Y时,当Co含量超过约2at%时,矫顽力显着降低。 可以认为这是因为钕钴的量 2  如果不添加Y,则随着Co含量的增加,在晶界相中形成的(铁磁性化合物)(铁磁性化合物)增加。 \n\n [0156] 对于低的Co含量,在不添加Y的情况下的矫顽力与在Y含量为1at%的情况下的矫顽力没有实质性的差异。 然而,对于约3at%或更高的Co含量,不添加Y的矫顽力随着Co含量的增加而显着降低,而添加Y的矫顽力与Co含量无关地保持在基本恒定的水平。 这是因为NdCo的量 2  通过添加Y的作用,将在晶界相中形成的(铁磁性化合物)抑制为较低的水平。但是,如果Y含量过多(例如5原子%以上),则Y量变多。 晶界相中的氧化物增加,矫顽力降低。 根据本发明人进行的实验,Y含量范围优选为0。 [0157] 通过优化Y含量,可以将Co含量提高至20at%。 在本发明中,Co含量范围优选为0。 [0158] 接下来,分别具有Nd组成的锭合金和烧结磁体的微观结构 10 镝 4 ÿ 2 铁 71 有限公司 7 乙 6  通过使用EPMA(电子探针微量分析仪)观察。 \n\n [0159] 图。 参照图10A至图10B。 图10F是晶锭合金的背散射电子图像和荧光X射线图像。 参照图11A至图11B。 图11F是烧结磁体的反向散射电子图像和荧光X射线图像。 \n\n [0160] 在图1所示的反向散射电子图像中, 10 A和图。 在图11A中,亮区表示晶界相,暗区表示主相晶粒。 \n\n [0161] 图。 参照图10B至图10B。 10 F和图。 参照图11B至图11B。 图11F分别是Nd,Dy,Co,Fe和Y的荧光X射线图像。 \n\n [0162] 从图2之间的比较可以看出, 10 A和图。 如图10B所示,在锭合金阶段的晶界相中存在大量的Nd。 从图2之间的比较可以看出, 10 A和图。 如图10D所示,在该阶段,在晶界相中也存在大量的Co。 相反,从图2之间的比较可以看出, 10 A和图。 如图10F所示,在主相中存在大量的Y。 \n\n [0163] 从图3可以看出,在烧结磁体阶段中,在晶界相中存在大量Y(集中)。 从图11F的比较可以看出,大量的Co被带入主相。 11 A和图。 11 D. \n\n [0164] 因此,可以看出,由于Y通过烧结而集中在晶界相中,因此Co从晶界相向主相移动。 在主相中,Fe被Co取代,从而导致居里温度升高。 如现有技术那样,在晶界相中存在大量Co的情况下,存在大量NdCo。 2 在烧结过程后形成铁磁性物质。 相反,在本发明中,由于Y的作用,晶界相中的Co浓度显着降低,从而基本上没有NdCo。 2 在晶界相中形成作为铁磁性物质的α,并且抑制了矫顽力的降低。 \n\n [0165] 组成中的摩尔分数x和y(R1 x + R2 y )(T1 p + T 2 q )  100 xy-z-r 问 z 中号 r  满足0.01≤y/(x + y)≤0.23。 \n\n [0166] R-Fe-B磁体的问题在于,由于稀土元素R容易被氧化,因此其抗腐蚀性差,从而使磁性能劣化。 认为由于以下原因,R-Fe-B磁体的耐腐蚀性差。 存在于R-Fe-B磁体的晶界中的Nd和/或Pr与大气中的水分反应形成氢氧化物。 氢氧化物的形成导致晶界中的体积膨胀,因此局部产生强应力,从而导致磁体的某些部分中的晶粒脱离。 氧化和/或腐蚀很可能从发生这种晶粒分离的位置发生。 \n\n [0167] 本发明人评估了本发明的稀土烧结磁体的耐腐蚀性。 耐腐蚀性评价中使用的样品的组成(%)如下表1所示。 \n\n [0168] \n\n    表格1  钕 Y B 铁 Al Cu  样品1 14.32 0 1.0 平衡 0.2 0.1  样品2 13.72 0.74 1.0 平衡 0.2 0.1  样品3 12.80 1.57 1.0 平衡 0.2 0.1  样品4  11.46 2.96 1.0 平衡 0.2 0.1 \n\n [0169] 对磁体样品1至4进行耐腐蚀性测试,其中将样品在2atm,125℃和85%的相对湿度的加速测试环境下保持24小时。 根据因腐蚀而产生的晶粒脱离量来评价耐腐蚀性的程度。 \n\n [0170] 测试的结果是,样品1和样品2之间没有显着差异。但是,样品3的颗粒脱离量约为样品1的1/2,样品4的颗粒脱离量约为1/5。 样本1中的一个。 \n\n [0171] 添加到样品中的Y与氧气强烈结合,并以氧化物形式稳定存在而不会形成氢氧化物。 因此,据信如果在晶界中存在Y,则由于氢氧化物的形成而引起的体积膨胀不易发生,因此也不易发生晶粒脱离。 这是通过添加Y获得的特殊效果,不能通过添加La而不是Y获得。 \n\n [0172] 根据本发明,Y等扩散到晶界相中,从而可以有效地利用对于主相必不可少的诸如Nd或Pr的稀土元素,而不会浪费这种元素。 元素在晶界相中的存在,从而将主相的磁化保持在高水平,从而提供了具有期望的磁性能的稀土类烧结磁体。 \n\n [0173] 此外,根据本发明,诸如Y的稀土元素R2位于晶界相中,从而可以有效地获得有助于改善主相的磁性能的元素(诸如Co或Ni)。 进入主相而不会在晶界相中浪费这种元素。 此外,也可以将对于Nd或Pr等主相必不可少的稀土元素作为主相。 因此,可以在实现这些元素的有效利用的同时进一步改善诸如耐热性的磁性能。 \n\n [0174] 尽管已经在优选实施例中描述了本发明,但是对于本领域技术人员将显而易见的是,可以以多种方式修改所公开的发明,并且可以采用除了以上具体阐述和描述的实施例之外的许多实施例。 因此,所附权利要求书旨在覆盖落入本发明的真实精神和范围内的本发明的所有修改。');
INSERT INTO `os_patent_instruction_text` VALUES (12920, 22749, 'TECHNICAL FIELD\n\n[0001]The present invention relates to a method and apparatus for compacting a powder and a method for producing a magnet. More particularly, the present invention relates to a powder compacting method and apparatus that can be used effectively to compact a rare earth alloy powder and also relates to a method for producing a magnet out of a rare earth alloy powder.\n\nBACKGROUND ART\n\n[0002]A powder compacting technique is used to manufacture various types of parts to be made of a ceramic or a metal. For example, a sintered body of a ceramic or a metal is manufactured by sintering a compact that has been obtained in a predetermined shape by subjecting a powder material to a powder compaction process. By subjecting the sintered bodies to a finishing process thereafter to adjust the sizes and shapes thereof, final products are obtained.\n\n[0003]Generally speaking, the quality of a sintered body (in terms of physical properties or configuration) is determined by the quality of a compact. Also, the compactability depends on the particle size distribution or the particle shapes of the powder material. For these reasons, various powder compacting methods have been proposed so far to obtain a compact of quality.\n\n[0004]For example, a sintered magnet of a rare earth alloy may be produced by performing the process steps of:[0005](1) melting a material metal at a high temperature to obtain an ingot of a rare earth alloy with a predetermined composition;[0006](2) pulverizing this alloy ingot to obtain a rare earth alloy powder of a small size;[0007](3) compacting the resultant alloy powder (to the surface of which a lubricant is added depending on the necessity) under a magnetic field to obtain a compact in a predetermined shape;[0008](4) sintering this compact at a high temperature (e.g., about 1,000° C. or more) to obtain a sintered magnet;[0009](5) further subjecting the resultant sintered magnet to a heat treatment called an “aging treatment” to improve the magnetic properties thereof; and[0010](6) grinding the surface of the sintered magnet to adjust the sizes and shapes thereof.\n\n[0011]In compacting an alloy (or magnet) powder material for use to produce the magnet described above, the orientation directions of the alloy particles need to be aligned with a predetermined direction under a magnetic field. It is known that a rare earth sintered magnet with excellent magnetic properties can be obtained by using an alloy powder that has been prepared by a strip casting process. However, it is particularly difficult to obtain a compact of quality from this alloy powder. This is because the alloy powder obtained by a strip casting process or any other rapid cooling process has a small mean particle size (e.g., about 2 μm to about 5 μm), a narrow particle size distribution and a low flowability (or compactability). It should be noted that the “mean particle size” means herein a mass median diameter unless stated otherwise.\n\n[0012]To produce a rare earth sintered magnet with excellent magnetic properties, the present inventors tested various conventional powder compacting methods to discover that those methods had the following problem. This problem will be described with reference to FIGS. 13(b) and 13(c). It should be noted that the feature of an inventive powder compacting method as shown in FIG. 13(a) will be described later.\n\n[0013]Suppose an alloy powder material, prepared by a strip casting process, is loaded into a cavity and pressed by an upper punch and a lower punch (typically made of a metal (e.g., SUS 304)) in accordance with a normal uniaxial compacting method (typically a die-pressing method). In that case, if the alloy powder material 10 has a fill density (or loading weight) distribution as shown in FIG. 13(b) (where H indicates a high density and L indicates a low density), then the resultant compact 20 should also have a non-uniform density distribution corresponding to the fill density distribution. Also, even if the cavity is filled with the alloy powder material at a sufficiently uniform density, the alloy powder material may still show some variation in its fill density when subjected to a magnetic field alignment process during the pressing process. Such a variation is caused by the field strength (or flux density) distribution during the magnetic field alignment process. A higher pressure is normally applied to a portion with a higher fill density. Accordingly, when the alloy powder material is subjected to the pressing process, such a variation in its density is amplified. And if such a density variation is significant, then the compact may crack, chip or deform as a result.\n\n[0014]Furthermore, when the compact 20 with such a non-uniform density distribution is sintered, the resultant sintered body 30 should be further deformed. This is because there is a correlation between the rate of shrinkage of the compact 20 through the sintering process and the density of the compact 20. That is to say, the shrinkage rate changes with the density distribution. This problem is particularly noticeable in a compact with a low density. Also, a thin compact is considerably affected by the distribution in the shrinkage rate, easily cracks or chips, and is likely deformed significantly.\n\n[0015]On the other hand, it is known that a quality compact of a magnetic powder material can be obtained by a rubber pressing method. In this method, a magnetic powder material is loaded into a mold made of rubber and then immersed in a liquid medium such that a hydrostatic pressure is applied to the magnetic powder material by way of the rubber mold. According to this rubber pressing method, a pressure can be applied isotropically to the magnetic powder material. Thus, even if the magnetic powder material that has been loaded into the mold has a non-uniform density distribution, a compact with a uniform density distribution can still be obtained. Unfortunately, though, the rubber pressing method is a sort of hydrostatic pressure pressing process with very low productivity and is hard to apply industrially.\n\n[0016]Thus, to increase the low productivity of the rubber pressing process, Japanese Patent Gazette for Opposition No. 55-26601 proposes a parallel die-pressing method in which a pre-molded rubber container is put into a die, filled with an alloy powder, and then pressure is applied thereto in the same direction as the magnetic field. In the pressing method disclosed in Japanese Patent Gazette for Opposition No. 55-26601, however, if a powder material with a low fill density, which has been loaded by a natural loading technique, for example, is pressed, then the resultant compact likely cracks, chips or deforms.\n\n[0017]To overcome such a problem, Japanese Laid-Open Publication No. 4-363010 proposes a method of die-pressing a magnetic powder material that has been loaded into a mold, having at least a rubber side surface and a bottom, at a high density (which is at least 1.2 times as high as the natural fill density). According to this method, however, the magnetic powder material 10 likely has a non-uniform fill density distribution while being loaded into such a rubber mold at a high density. Thus, the resultant compact 20 can have a uniform compact density as shown in FIG. 13(c). But since the outer shape of the compact 20 reflects its fill density distribution, it is difficult to obtain a compact in a predetermined shape. For that reason, to process a sintered body 30, obtained from such a compact 20, into the predetermined shape, all of the surfaces of the sintered body 30 must be machined. Also, this method requires high-density filling. Accordingly, when a magnetic powder with a small mean particle size and a narrow particle size distribution (e.g., a rare earth alloy powder obtained by a strip casting process) is used, the powder easily sticks together, thus causing a significant variation in fill density. As a result, the problem becomes even more noticeable.\n\n[0018]As described above, none of the conventional techniques can compact a powder material with a non-uniform fill density distribution at a high productivity with cracking, chipping or deformation of the compact minimized. In particular, none of those techniques can compact a powder material with a low fill density (e.g., the rare earth alloy powder material described above) at a high productivity.\n\n[0019]In order to overcome the problems described above, an object of the present invention is to provide a powder compacting method and apparatus that can make a compact with a uniform density distribution at a high productivity even from a powder material with a non-uniform fill density distribution, and a method for producing a magnet by using them.\n\nDISCLOSURE OF INVENTION\n\n[0020]A powder compacting method according to the present invention includes the steps of: providing a powder material; loading the powder material into a cavity; uniaxially pressing the powder material, which has been loaded into the cavity, between two opposed press surfaces, thereby obtaining a compact, wherein at least one of the two press surfaces is deformed elastically under a compacting pressure when contacting with the powder material in the cavity; and unloading the compact from the cavity.\n\n[0021]In one preferred embodiment, the at least one press surface is the surface of a resin layer.\n\n[0022]In another preferred embodiment, the resin layer has a Shore A hardness of 25 to 95.\n\n[0023]In another preferred embodiment, in the uniaxially pressing step, just one of the two press surfaces is deformed elastically under the compacting pressure.\n\n[0024]In another preferred embodiment, the loading step includes the step of measuring the powder material with the cavity.\n\n[0025]In another preferred embodiment, the loading step includes the step of filling the cavity with the powder material at a relative density of 0.20 to 0.35.\n\n[0026]In another preferred embodiment, the uniaxially pressing step includes the step of uniaxially pressing the powder material to a volume that is 0.5 to 0.65 time as large as the content volume of the cavity.\n\n[0027]In another preferred embodiment, the compact satisfies D≦|S1/2|/3, where D is the thickness (mm) of the compact as measured in a press axis direction in the uniaxially pressing step and S is the area (mm2) of each of the two press surfaces.\n\n[0028]An inventive method for producing a magnet includes the steps of: providing a powder material including a rare earth alloy powder; loading the powder material into a cavity; uniaxially pressing the powder material, which has been loaded into the cavity, between two opposed press surfaces, thereby obtaining a compact, wherein at least one of the two press surfaces is deformed elastically under a compacting pressure when contacting with the powder material in the cavity; and unloading the compact from the cavity.\n\n[0029]In one preferred embodiment, the at least one press surface is the surface of a resin layer.\n\n[0030]In another preferred embodiment, the resin layer has a Shore A hardness of 25 to 90.\n\n[0031]In another preferred embodiment, in the uniaxially pressing step, just one of the two press surfaces is deformed elastically under the compacting pressure.\n\n[0032]In another preferred embodiment, the loading step includes the step of measuring the powder material with the cavity.\n\n[0033]In another preferred embodiment, the loading step includes the step of filling the cavity with the powder material at a relative density of 0.20 to 0.35.\n\n[0034]In another preferred embodiment, the uniaxially pressing step includes the step of uniaxially pressing the powder material to a volume that is 0.5 to 0.65 time as large as the content volume of the cavity.\n\n[0035]In another preferred embodiment, the compact satisfies D≦|S1/2|/3, where D is the thickness (mm) of the compact as measured in a press axis direction in the uniaxially pressing step and S is the area (mm2) of each of the two press surfaces.\n\n[0036]In another preferred embodiment, the method further includes the step of aligning the rare earth alloy powder by applying a magnetic field thereto perpendicularly to the press axis direction during the uniaxially pressing step.\n\n[0037]In another preferred embodiment, in the uniaxially pressing step, the press axis direction is defined vertically, the two press surfaces consist of an upper press surface and a lower press surface, the side surface of the cavity is defined by an inner surface of a die, and the bottom of the cavity is defined by the lower press surface.\n\n[0038]In another preferred embodiment, the method further includes the steps of: sintering the compact to obtain a sintered body; and finishing the surface of the sintered body. The surface finishing step includes the step of selectively grinding only a surface of the sintered body that contacted with the at least one press surface in the uniaxially pressing step.\n\n[0039]A powder compacting apparatus according to the present invention is provided to uniaxially press a powder material that has been loaded into a cavity. The apparatus includes: a die having an inner surface that defines the side surface of the cavity; a lower punch having a lower press surface that defines the bottom of the cavity; and an upper punch having an upper press surface that is opposed to the lower press surface. In uniaxially pressing the powder material, which has been loaded into the cavity, between the lower and upper press surfaces, at least one of the lower and upper press surfaces is selectively deformed elastically under a compacting pressure among the inner surface, the lower press surface and the upper press surface that define the cavity.\n\n[0040]In one preferred embodiment, the at least one press surface is the surface of a resin layer.\n\n[0041]In another preferred embodiment, the resin layer has a Shore A hardness of 25 to 90.\n\n[0042]In another preferred embodiment, just one of the lower and upper press surfaces is deformed elastically under the compacting pressure.\n\n[0043]In another preferred embodiment, the upper press surface is deformed elastically under the compacting pressure.\n\n[0044]In another preferred embodiment, the upper press surface is the surface of a resin layer, and the upper punch includes a member for preventing the resin layer from expanding in a horizontal direction, which is perpendicular to the press axis direction, under the compacting pressure.\n\n[0045]In another preferred embodiment, the upper punch includes a concave portion to receive the resin layer, and the side surface of the concave portion prevents the resin layer from expanding in the horizontal direction that is perpendicular to the press axis direction under the compacting pressure.\n\n[0046]In another preferred embodiment, the upper punch includes a resin layer, a portion of which changes its hardness in the press axis direction, and the upper press surface is the surface of the resin layer.\n\n[0047]In another preferred embodiment, the resin layer includes: a first resin layer with a first hardness; and a second resin layer with a second hardness that is lower than the first hardness, and the upper press surface is the surface of the first resin layer.\n\nBRIEF DESCRIPTION OF DRAWINGS\n\n[0048]FIG. 1 is a flowchart showing a powder compacting method according to the present invention.\n\n[0049]FIG. 2 schematically illustrates a cross-sectional structure of a compacting apparatus 100 according to the present invention, wherein: FIG. 2(a) illustrates a state in which a powder material 10 has just been loaded into a cavity; FIG. 2(b) illustrates a state in which a compacting pressure is applied thereto; and FIG. 2(c) illustrates a state in which a compact 20 is unloaded.\n\n[0050]FIG. 3(a) is a perspective view schematically illustrating a powder compacting apparatus 200 according to an embodiment of the present invention, and FIG. 3(b) is a schematic cross-sectional view of the powder compacting apparatus 200.\n\n[0051]FIG. 4 is an exploded perspective view schematically illustrating an upper punch 205 to be provided for the powder compacting apparatus 200.\n\n[0052]FIG. 5 is an exploded perspective view schematically illustrating another upper punch 405 for use in a powder compacting apparatus according to the present invention.\n\n[0053]FIG. 6 schematically illustrates another upper punch 505 for use in a powder compacting apparatus according to the present invention, wherein: FIG. 6(a) is a cross-sectional view thereof; and FIG. 6(b) is a plan view thereof.\n\n[0054]FIG. 7 is a cross-sectional view schematically illustrating another upper punch 605 for use in a powder compacting apparatus according to the present invention.\n\n[0055]FIGS. 8(a) and 8(b) schematically illustrate a cross-sectional structure of the compacting apparatus that is performing a compacting process with the upper punch 605 shown in FIG. 7.\n\n[0056]FIG. 9 is a cross-sectional view schematically illustrating another upper punch 705 for use in a powder compacting apparatus according to the present invention.\n\n[0057]FIG. 10(a) shows the results of estimated variations in the size of sintered bodies obtained by the method for producing a magnet according to the invention along with the results that were estimated for sintered bodies obtained by the conventional manufacturing process.\n\n[0058]FIG. 10(b) is a schematic representation showing a method for estimating a size variation.\n\n[0059]FIG. 11(a) shows the outer peripheral shape of a sintered body, which was obtained by using a resin layer with a Shore A hardness of 70.\n\n[0060]FIG. 11(b) shows the outer peripheral shape of a sintered body, which was obtained by using an upper punch with no resin layer.\n\n[0061]FIG. 12 schematically shows how to obtain the outer peripheral shapes shown in FIGS. 11(a) and 11(b).\n\n[0062]FIGS. 13(a), 13(b) and 13(c) illustrate the features of various powder compacting methods, wherein:\n\n[0063]FIG. 13(b) shows a method that uses a normal die; and\n\n[0064]FIG. 13(c) shows a rubber molding method.\n\n[0065]FIG. 13(c) shows a method that uses a normal die.\n\nBEST MODE FOR CARRYING OUT THE INVENTION\n\n[0066]Hereinafter, embodiments of a powder compacting method and apparatus according to the present invention will be described with reference to the accompanying drawings.\n\n[0067]As shown in the flowchart of FIG. 1, a powder compacting method according to an embodiment of the present invention includes: the step S10 of providing a powder material; the step S20 of loading the powder material into a cavity; the step S30 of uniaxially pressing the powder material with at least one of two press surfaces deformed elastically under a compacting pressure; and the step S40 of unloading a compact from the cavity. In the uniaxially pressing step S30, at least one of two opposed press surfaces, contacting with the powder material in the cavity, is deformed elastically under the compacting pressure.\n\n[0068]That is to say, in the powder compacting method of the present invention, at least one of the two press surfaces (i.e., both or one of the two press surfaces) is deformed elastically under the compacting pressure, whereas at least the side surface of the cavity is not deformed elastically under the compacting pressure but substantially maintains its original shape during the pressing process. Even if the powder material in the cavity has a non-uniform fill density distribution, the non-uniform fill density distribution is counterbalanced with the elastic deformation of the at least one press surface, thereby applying a uniform pressure to the powder material. For example, as shown in FIG. 13(a), portions of the compact 20 corresponding to low-fill-density portions of the powder material 10 (i.e., as indicated by L in FIGS. 13(a) through 13(c)) are thinner than the other portion of the compact 20 corresponding to a high-fill-density portion of the powder material 10 (as indicated by H in FIGS. 13(a) through 13(c)) as measured in a press axis direction (i.e., perpendicularly to the press surfaces). That is to say, the non-uniform fill density distribution is transformed into a non-uniform thickness distribution of the compact 20, thus uniformizing the density of the compact 20. According to the powder pressing method of the present invention, even a rare earth alloy powder, having a fill density that is low enough to have its orientation directions aligned under a magnetic field sufficiently, can be pressed into a compact with a uniform density distribution at a high productivity.\n\n[0069]Furthermore, the surface to counterbalance the non-uniform fill density distribution is just the surface that has been in contact with the elastically deformed press surface. Thus, at most two opposed surfaces should counterbalance that non-uniform fill density distribution. Accordingly, when just one of the two press surfaces is supposed to be elastically deformed, just one surface of the compact 20 has counterbalanced the non-uniform fill density distribution and the other surface of the compact 20 (i.e., the surface that has been in contact with the non-elastically-deformed press surface) has a predetermined shape (typically a flat shape) as shown in FIG. 13(a). This is because the other surface is defined by the side surface of the cavity and the other press surface that are substantially not deformed elastically under the compacting pressure.\n\n[0070]As described above, the compact 20 obtained by the powder compacting method of the present invention has a uniform density distribution, and therefore, hardly chips, cracks, or deforms. Furthermore, the compact 20 shrinks uniformly even during the sintering process, thus creating almost no chipping, cracking or deformation in the sintered body 30. Thus, high-quality compacts can be obtained at a high productivity. In addition, the powder pressing method of the present invention can also process a powder material with a relatively low fill density. Thus, the method of the present invention can be used effectively to prepare a compact to be processed into a rare earth sintered magnet.\n\n[0071]Furthermore, even though the compact shrinks through the sintering process, the compact can still maintain a predetermined outer shape as defined by the side surface of the cavity. Accordingly, it is just the surface of the compact, which has been in contact with the elastically deformed press surface, that needs to be processed (e.g., grinded) by a subsequent finishing process. Thus, even in a situation where both of the two press surfaces are supposed to be deformed elastically, only the two opposed surfaces of the compact should be processed, but the side surface of the compact does not have to be processed. For example, if a compact with six sides is obtained by a conventional compacting method, all of those six sides need to be processed. In contrast, according to the powder compacting method of the present invention, at most two sides need to be processed, thus increasing the throughput significantly. Furthermore, the processing margin (or grinding margin) can be decreased, thus increasing the yield of the material, too. In particular, in the situation where just one of the two press surfaces is supposed to be deformed elastically as shown in FIG. 13(a), only one surface needs to be subjected to the finishing process. As a result, the productivity can be further increased.\n\n[0072]The powder compacting method described above may be carried out with the powder compacting apparatus 100 shown in FIG. 2, for example. FIGS. 2(a), 2(b) and 2(c) schematically illustrate a cross-sectional structure of the compacting apparatus 100. FIG. 2(a) illustrates a state in which a powder material 10 has just been loaded into a cavity 112; FIG. 2(b) illustrates a state in which a compacting pressure is applied thereto; and FIG. 2(c) illustrates a state in which a compact 20 is unloaded.\n\n[0073]The powder compacting apparatus 100 includes: a die 110 with an inner surface 110a that defines the side surface of the cavity 112; a lower punch 130 with a lower press surface 130a that defines the bottom of the cavity 112; and an upper punch 140 with an upper press surface 140a that is opposed to the lower press surface 130a. If necessary, the powder compacting apparatus 100 may further include a magnetic field generating coil 206 to align the particles of a rare earth alloy powder, for example, under a magnetic field during the pressing process.\n\n[0074]In this powder compacting apparatus 100, only the upper press surface 140a, not the inner surface 110a or the lower press surface 130a, is deformed elastically under a compacting pressure while the powder material 10 is being pressed uniaxially. The lower and upper punches 130 and 140 can be freely inserted into, and removed from, the opening 112 of the die 110 with a predetermined clearance allowed with respect to the inner surface 110a. The opening and the cavity are identified herein by the same reference numeral.\n\n[0075]In the following example, only the upper press surface 140a is deformed elastically. Naturally, only the lower press surface 130a may be deformed elastically. Alternatively, both the lower and upper press surfaces 130a and 140a may be deformed elastically. However, just one of the lower and upper press surfaces 130a and 140a is preferably deformed elastically because the subsequent finishing process can be simplified in that case. That is to say, to obtain a compact in a predetermined shape by the subsequent surface finishing process, one of the two surfaces may be used as a reference plane for the surface finish and only the other surface may be processed (e.g., grinded).\n\n[0076]The powder compacting apparatus 100 may be the same as a known die-pressing apparatus except that just the upper press surface 140a is selectively deformed elastically under a compacting pressure to be applied in the uniaxial pressing process among the surfaces that define the cavity 112 and the upper press surface 140a (i.e., the surfaces that contact with the powder material during the pressing process). The die 110, the lower punch 130 and the base 144 of the upper punch 140 may be made of a metal (e.g., SUS 304). Also, the die 110 and the lower and upper punches 130 and 140 may be driven hydraulically.\n\n[0077]The press surface 140a to be deformed elastically under the compacting pressure may be formed by providing a pressure medium layer 142 having an appropriate mechanical property (which is well represented by its Shore hardness) on the surface of the metallic base 144. The pressure medium layer 142 does not always have to be a solid but may also be a liquid which is hermetically packed in an appropriate bag. Nevertheless, it is still convenient to use a solid layer. For example, a resin layer is preferably used as the pressure medium layer 142. A resin having a Shore A hardness of 25 to 90 is preferably used as a material for the resin layer. A resin layer with a Shore A hardness of 60 to 85 is particularly preferred. Specifically, the resin layer is preferably made of a urethane resin including urethane rubber.\n\n[0078]Hereinafter, the operation of the powder compacting apparatus 100 and the powder compacting method of the present invention will be described with reference to FIGS. 2(a) through 2(c).\n\n[0079]First, as shown in FIG. 2(a), the powder material 10 is loaded into the cavity 112. The powder may be loaded by any of various known methods. However, the powder compacting apparatus and method of the present invention can be used effectively to compact the powder material 10 that has been loaded there at a low fill density (or to form a thin compact among other things). Thus, a loading method to be preferably adopted for that purpose will be described. The powder material to be used is not particularly limited. This is because according to the powder compacting method of the present invention, a quality compact can be obtained even from a powder material with particularly poor flowability (i.e., loadability and/or compactability).\n\n[0080]A material including the rare earth alloy powder (e.g., an R—Fe—B based alloy powder) prepared by the strip casting process mentioned above may be used as the powder material. To increase the flowability (i.e., loadability and compactability), a powder material, in which a lubricant has been added in a predetermined amount (e.g., at most 0.12 wt % of aliphatic ester) to the surface of a rare earth alloy powder with a predetermined particle size (of 2 μm to 6 μm, for example), is typically used. Optionally, it is not impossible to use a material obtained by granulating a rare earth alloy powder with a lubricant or a binder. However, such a material is not preferred because a higher magnetic field is needed to decompose the granulated particles into primary particles and thereby align those rare earth alloy powder particles under a magnetic field. Also, if carbon, included in the lubricant or binder to be added to the rare earth alloy powder, is left in the sintered body, then that carbon may deteriorate the magnetic properties. For that reason, the amount of those additives is preferably as small as possible, generally speaking. It is one of the reasons why a rare earth alloy powder is hard to compact into a desired shape that the amount of the additive such as the lubricant is limited in this manner.\n\n[0081]The process step of loading the powder material may be carried out by using either a sieve or a feeder box as disclosed in Japanese Patent Publication for Opposition No. 59-40560, Japanese Laid-Open Publication No. 10-58198, Japanese Utility Model Publication No. 63-110521 and Japanese Laid-Open Publication No. 2000-248301. By adopting such a loading technique, the powder can be loaded at a fill density that is low enough to have its orientation directions aligned under the magnetic field.\n\n[0082]Particularly when a powder material with poor flowability (or fill density) such as a rare earth alloy powder prepared by a strip casting process should be loaded, the method disclosed in Japanese Laid-Open Publication No. 2000-248301, which was filed by the applicant of the present application, is preferably used. In that method, a feeder box with an opening at the bottom is positioned over a cavity and a bar member is horizontally reciprocated on the bottom of the feeder box, thereby feeding an alloy powder material from the feeder box into the cavity. In this manner, the alloy powder can be loaded from the feeder box into the cavity sequentially (i.e., beginning with a part of the powder near the bottom) at an equal pressure. As a result, the cavity can be filled with the powder at a relatively uniform density without causing any lumps or bridges.\n\n[0083]To obtain a thin compact, a powder material in an amount corresponding to the inner volume of the cavity is preferably measured with the cavity in the loading process step. For example, if the bar member is reciprocated over the cavity as in the method described above, then the cavity can be filled with the powder material that has been fed thereto with the excessive portion thereof sliced off. Thus, the cavity can be filled with the predetermined amount of powder material relatively uniformly. It should be noted that if the powder material is loaded by such a method, then a non-uniform loading weight (or fill density) distribution is likely formed on the surface of the powder material loaded (i.e., on the upper surface of the cavity) in the direction in which the bar member is going back and forth. Accordingly, if such a powder material is uniaxially pressed by using a conventional die-pressing apparatus in which no press surfaces are deformed elastically under the compacting pressure, then the resultant compact should have a non-uniform density distribution and may chip, crack or deform. However, according to the powder pressing method of the present invention, a compact with a uniform density distribution can be obtained. In forming a thin compact, in particular, the non-uniform fill density distribution near the surface of the powder material should have significant effects. Thus, the present invention is particularly effective in such a situation.\n\n[0084]According to any of the various loading techniques described above, the powder material can be loaded into the cavity at a relative density of 0.20 to 0.35. As used herein, the “relative density” means the ratio of the fill density of the powder material to the true density thereof. If the powder material is measured with the cavity, the fill density thereof is given by dividing the', '技术领域 \n\n [0001] 本发明涉及用于压实粉末的方法和设备以及用于制造磁体的方法。 更具体地,本发明涉及可以有效地压实稀土合金粉末的粉末压实方法和设备,并且还涉及由稀土合金粉末制造磁体的方法。 \n\n 背景技术 \n\n [0002] 粉末压实技术用于制造各种类型的由陶瓷或金属制成的零件。 例如,通过对粉末材料进行粉末压实处理来烧结以预定形状获得的成型体来制造陶瓷或金属的烧结体。 之后,通过对烧结体进行精加工以调节其尺寸和形状,获得了最终产品。 \n\n [0003] 一般而言,烧结体的质量(就物理性质或构造而言)由压坯的质量决定。 同样,可压实性取决于粉末材料的粒度分布或颗粒形状。 由于这些原因,迄今为止已经提出了各种粉末压实方法以获得质量压实。 \n\n [0004] 例如,可以通过执行以下工艺步骤来生产稀土合金烧结磁体:   [0005](1)在高温下熔融原料金属以获得具有预定组成的稀土合金锭;[0006] (2)将该合金锭粉碎,得到小尺寸的稀土合金粉末。[0007] (3)在磁场下将所得合金粉末(根据需要在其表面上添加润滑剂)压制成型,从而得到预定形状的压块;[0008] (4)在高温(例如约1000℃以上)下烧结该成形体,得到烧结磁铁。[0009] (5)进一步对所得的烧结磁铁进行称为“时效处理”的热处理,以改善其磁性能;和[0010] (6)对烧结磁体的表面进行研磨以调节其尺寸和形状。  \n\n [0011] 在压实用于制造上述磁体的合金(或磁体)粉末材料时,合金颗粒的取向方向需要在磁场下与预定方向对准。 众所周知,通过使用通过薄带连铸法制备的合金粉末,可以获得具有优异磁性的稀土烧结磁体。 然而,从这种合金粉末获得质量压块特别困难。 这是因为通过带式铸造工艺或任何其他快速冷却工艺获得的合金粉末具有小的平均粒径(例如,约2μm至约5μm),窄的粒径分布和低的流动性(或可压实性)。 应当注意,除非另外说明,否则“平均粒径”在本文中是指质量中值直径。 \n\n [0012] 为了生产具有优异磁性能的稀土烧结磁体,本发明人测试了各种常规粉末压制方法,以发现这些方法具有以下问题。 将参考图3至图6描述该问题。  13( b )和 13 ( c )。 应当注意的是,如图1所示的本发明的粉末压实方法的特征是具有如下特征。  13( a )将在后面描述。 \n\n [0013] 假设将通过带钢铸造工艺制备的合金粉末材料加载到型腔中,并按照常规单轴压紧方法通过上冲头和下冲头(通常由金属(例如SUS 304)制成)进行压制( 通常是压模方法)。 在这种情况下,如果合金粉末材料 10  具有填充密度(或装载重量)分布,如图2所示。  13( b )(其中H表示高密度,L表示低密度),则所得压坯 20  还应具有与填充密度分布相对应的非均匀密度分布。 而且,即使腔室以足够均匀的密度填充有合金粉末材料,当在加压过程中经受磁场对准过程时,合金粉末材料仍可能显示出其填充密度的一些变化。 这种变化是由磁场对准过程中的场强(或磁通密度)分布引起的。 通常将较高的压力施加到具有较高填充密度的部分。 因此,当对合金粉末材料进行压制处理时,其密度的这种变化被放大。 并且,如果这种密度变化很大,则压块可能因此破裂,碎裂或变形。 \n\n [0014] 此外,当紧凑 20  以这种不均匀的密度分布进行烧结,得到的烧结体 30  应该进一步变形。 这是因为成型体的收缩率之间存在相关性。 20  通过烧结过程和压块的密度 20 。 也就是说,收缩率随密度分布而变化。 该问题在低密度的压块中特别明显。 而且,薄的成形体受收缩率分布的影响很大,容易破裂或碎裂,并且可能显着变形。 \n\n [0015] 另一方面,已知可以通过橡胶压制方法获得磁性粉末材料的质量压块。 在该方法中,将磁性粉末材料加载到由橡胶制成的模具中,然后浸入液体介质中,从而通过橡胶模具将静水压力施加到磁性粉末材料上。 根据该橡胶压制方法,可以向磁性粉末材料各向同性地施加压力。 因此,即使已装入模具中的磁性粉末材料具有不均匀的密度分布,仍可以获得具有均匀密度分布的压坯。 然而,不幸的是,橡胶压制方法是一种静液压压制方法,其生产率非常低,并且难以在工业上应用。 \n\n [0016] 因此,为了提高橡胶压制工艺的低生产率,日本反对公报第55-26601号提出了一种平行模压方法,其中将预成型的橡胶容器放入装有合金粉末的模具中, 然后以与磁场相同的方向对其施加压力。 但是,在日本专利公报第55-26601号中所公开的压制方法中,如果对例如通过自然加载技术加载的填充密度低的粉末材料进行压制,则很可能产生压块。 裂纹,碎裂或变形。 \n\n [0017] 为了克服这种问题,日本特开平4-363010号公报提出了一种以高密度模压已装载到至少具有橡胶侧面和底部的模具中的磁性粉末材料的方法。  (至少是自然填充密度的1.2倍)。 然而,根据该方法,磁性粉末材料 10  当以高密度加载到这种橡胶模具中时,填充密度分布可能会不均匀。 因此,最终的紧凑型 20  如图1所示,它可以具有均匀的致密密度。  13( c )。 但由于外形紧凑 20  反映其填充密度分布,难以获得预定形状的压块。 因此,要加工烧结体 30 ,从如此紧凑的结构中获得 20 制成预定形状的烧结体的所有表面 30  必须加工。 另外,该方法需要高密度填充。 因此,当使用平均粒径小且粒径分布窄的磁性粉末(例如,通过薄带连铸法获得的稀土合金粉末)时,该粉末容易粘在一起,从而导致填充密度的显着变化。  。 结果,问题变得更加明显。 \n\n [0018] 如上所述,没有一种常规技术能够以高生产率将具有不均匀填充密度分布的粉末材料压实,同时使压块的破裂,碎裂或变形最小化。 特别地,这些技术都不能以高生产率压实填充密度低的粉末材料(例如上述稀土合金粉末材料)。 \n\n [0019] 为了克服上述问题,本发明的目的是提供一种粉末压实方法和设备,其甚至可以由填充密度不均匀的粉末材料以高生产率制造具有均匀密度分布的压坯。 分布,以及通过使用它们制造磁体的方法。 \n\n 发明内容 \n\n [0020] 根据本发明的粉末压实方法包括以下步骤:提供粉末材料;和 将粉末材料装入腔中; 在两个相对的挤压表面之间单轴挤压已装入腔体中的粉末材料,从而获得压块,其中,当与腔体中的粉末材料接触时,两个挤压表面中的至少一个在压紧压力下发生弹性变形 ; 并从型腔中卸载压块。 \n\n [0021] 在一优选实施例中,至少一个压制表面是树脂层的表面。 \n\n [0022] 在另一个优选的实施方案中,树脂层的肖氏A硬度为25至95。 \n\n [0023] 在另一个优选实施例中,在单轴压制步骤中,两个压制表面中的仅一个在压制压力下弹性变形。 \n\n [0024] 在另一个优选的实施方案中,加载步骤包括用空腔测量粉末材料的步骤。 \n\n [0025] 在另一个优选实施例中,加载步骤包括以相对密度为0.20至0.35用粉末材料填充空腔的步骤。 \n\n [0026] 在另一个优选的实施方案中,单轴压制步骤包括将粉末材料单轴压制为腔体容纳体积的0.5至0.65倍的体积的步骤。 \n\n [0027] 在另一个优选的实施方式中,压块满足D≤| S 1/2 | / 3,其中D是单轴压制步骤中沿压制轴方向测得的压块厚度(mm),S是面积(mm) 2 )的两个按压面中的每个。 \n\n [0028] 本发明的磁铁的制造方法包括以下步骤:提供包括稀土合金粉末的粉末材料; 将粉末材料装入腔中; 在两个相对的挤压表面之间单轴挤压已装入腔体中的粉末材料,从而获得压块,其中,当与腔体中的粉末材料接触时,两个挤压表面中的至少一个在压紧压力下发生弹性变形 ; 并从型腔中卸载压块。 \n\n [0029] 在一优选实施例中,至少一个压制表面是树脂层的表面。 \n\n [0030] 在另一个优选的实施方案中,树脂层的肖氏A硬度为25至90。 \n\n [0031] 在另一个优选实施例中,在单轴压制步骤中,两个压制表面中的仅一个在压制压力下弹性变形。 \n\n [0032] 在另一个优选的实施方案中,加载步骤包括用空腔测量粉末材料的步骤。 \n\n [0033] 在另一个优选实施例中,加载步骤包括以相对密度为0.20至0.35用粉末材料填充空腔的步骤。 \n\n [0034] 在另一个优选的实施方案中,单轴压制步骤包括将粉末材料单轴压制为腔体容纳体积的0.5至0.65倍的体积的步骤。 \n\n [0035] 在另一个优选的实施方式中,压块满足D≤| S 1/2 | / 3,其中D是单轴压制步骤中沿压制轴方向测得的压块厚度(mm),S是面积(mm) 2 )的两个按压面中的每个。 \n\n [0036] 在另一个优选实施例中,该方法还包括通过在单轴压制步骤期间垂直于压制轴方向施加磁场而使稀土合金粉末取向的步骤。 \n\n [0037] 在另一个优选实施例中,在单轴压制步骤中,压制轴线方向垂直地限定,两个压制表面由上压制表面和下压制表面组成,腔的侧面由模具的内表面限定。  ,模腔的底部由下压力表面定义。 \n\n [0038] 在另一个优选的实施方案中,该方法进一步包括以下步骤:烧结压块以获得烧结体;和 并完成烧结体的表面处理。 表面精加工步骤包括在单轴压制步骤中仅选择性地研磨烧结体的与至少一个压制表面接触的表面的步骤。 \n\n [0039] 提供根据本发明的粉末压实设备,以单轴压制已经装载到腔中的粉末材料。 该设备包括:模具,该模具具有限定腔的侧表面的内表面; 下冲头具有下压力表面,该下压力表面限定空腔的底部; 上冲头具有与下压力面相对的上压力面。 在下,上挤压表面之间单轴挤压已装入腔中的粉末材料时,下和上挤压表面中的至少一个在压紧压力下在内表面,下挤压表面之间弹性地变形。 以及定义腔体的上压力机表面。 \n\n [0040] 在一优选实施例中,至少一个压制表面是树脂层的表面。 \n\n [0041] 在另一个优选的实施方案中,树脂层的肖氏A硬度为25至90。 \n\n [0042] 在另一优选实施例中,下压制表面和上压制表面中的仅一个在压紧压力下弹性变形。 \n\n [0043] 在另一个优选实施例中,上压榨表面在压紧压力下弹性变形。 \n\n [0044] 在另一个优选实施例中,上压制表面是树脂层的表面,并且上冲头包括用于防止树脂层在压紧压力下沿垂直于压制轴线方向的水平方向膨胀的构件。 \n\n [0045] 在另一个优选实施方式中,上冲头包括用于容纳树脂层的凹部,并且该凹部的侧面防止了在压紧压力下树脂层在垂直于压力轴方向的水平方向上膨胀。 \n\n [0046] 在另一个优选实施例中,上冲头包括树脂层,其一部分在压制轴线方向上改变其硬度,并且上压制表面是树脂层的表面。 \n\n [0047] 在另一个优选的实施方案中,树脂层包括:具有第一硬度的第一树脂层;和具有第一硬度的第一树脂层。 第二树脂层具有比第一硬度低的第二硬度,并且上按压表面是第一树脂层的表面。 \n\n 附图说明 \n\n [0048] 图。 图1是示出根据本发明的粉末压实方法的流程图。 \n\n [0049] 图。 图2示意性地示出了压实设备的截面结构。 100  根据本发明,其中:  2( a )表示粉末材料的状态 10  刚被装进一个洞里; 图。  2( b )示出了向其施加压紧压力的状态; 和图。  2( c )表示一种状态 20  已卸载。 \n\n [0050] 图。  3( a )是示意性地示出粉末压制装置的透视图 200  根据本发明的一个实施例,  3( b )是粉末压制装置的示意性截面图 200 。 \n\n [0051] 图。 图4是示意性地示出上冲头的分解立体图。 205  为粉末压实设备提供 200 。 \n\n [0052] 图。 图5是示意性地示出另一上冲头的分解立体图。 405  用于根据本发明的粉末压实设备中。 \n\n [0053] 图。 图6示意性地示出了另一上冲头 505  用于根据本发明的粉末压实设备中,其中:  6( a )是其剖视图; 和图。  6( b )是其平面图。 \n\n [0054] 图。 图7是示意性地示出另一上冲头的剖视图。 605  用于根据本发明的粉末压实设备中。 \n\n [0055] 无花果 8( a )和 8 ( b )示意性地示出了利用上冲头进行压实处理的压实装置的截面结构 605  如图所示。  7。 \n\n [0056] 图。 图9是示意地表示另一上冲头的剖视图。 705  用于根据本发明的粉末压实设备中。 \n\n [0057] 图。  10( a )示出了通过根据本发明的磁体的制造方法获得的烧结体的尺寸的估计变化的结果,以及通过常规制造方法获得的烧结体的估计结果。 \n\n [0058] 图。  10( b )是示出用于估计尺寸变化的方法的示意图。 \n\n [0059] 图。  11( a )表示通过使用肖氏A硬度为70的树脂层获得的烧结体的外周形状。 \n\n [0060] 图。  11( b )表示通过使用没有树脂层的上冲头获得的烧结体的外周形状。 \n\n [0061] 图。 图12示意性地示出了如何获得图11至图11中所示的外周形状。  11( a )和 11 ( b )。 \n\n [0062] 无花果 13( a ), 13 ( b )和 13 ( c )说明了各种粉末压实方法的特征,其中: \n\n [0063] 图。  13( b )显示了使用普通模具的方法; 和 \n\n [0064] 图。  13( c )显示了橡胶成型方法。 \n\n [0065] 图。  13( c )显示了使用普通模具的方法。 \n\n 实施本发明的最佳模式 \n\n [0066] 在下文中,将参照附图描述根据本发明的粉末压实方法和设备的实施例。 \n\n [0067] 如图2的流程图所示, 参照图1,根据本发明实施例的粉末压实方法包括:步骤S 10  提供粉末材料的方法; 步骤 20  将粉末材料装入空腔的步骤; 步骤 30  通过压制压力使弹性变形的两个挤压面中的至少一个单轴挤压粉末材料的方法; 和步骤S 40  从腔体中取出压坯的过程。 在单轴压制步骤S中 30 因此,与模腔中的粉末材料接触的两个相对的压制表面中的至少一个在压制压力下弹性变形。 \n\n [0068] 也就是说,在本发明的粉末压制方法中,两个压制表面中的至少一个(即,两个压制表面中的一个或两个)在压制压力下弹性变形,而至少压制表面的侧面被压制。 空腔在压紧压力下不会弹性变形,而是在压制过程中基本上保持其原始形状。 即使腔体中的粉末材料具有不均匀的填充密度分布,该不均匀的填充密度分布也与至少一个压榨表面的弹性变形平衡,从而向粉末材料施加均匀的压力。 例如,如图2所示,  13( a ),契约的一部分 20  对应于粉末材料的低填充密度部分 10  (即,如图13中的L所示( a )通过 13 ( c ))比粉盒的其他部分薄 20  对应于粉末材料的高填充密度部分 10  (如图13中的H所示( a )通过 13 ( c ))沿压制轴方向(即垂直于压制表面)测量。 也就是说,填充密度的不均匀分布被转换为压块的厚度不均匀分布 20 ,从而使坯块的密度均匀 20 。 根据本发明的粉末压制方法,即使填充密度足够低以使得其取向方向在磁场下充分对准的稀土合金粉末也可以被压制成具有均匀密度分布的压坯。 高生产率。 \n\n [0069] 此外,用于抵消填充密度分布不​​均匀的表面只是与弹性变形的挤压表面接触的表面。 因此,至多两个相对的表面应抵消该不均匀的填充密度分布。 因此,当假定两个挤压表面中的仅一个弹性变形时,压块的仅一个表面 20  抵消了填充密度分布的不均匀和压坯的另一个表面 20  如图2所示,(即,已经与非弹性变形的压制表面接触的表面)具有预定形状(通常是平坦形状)。  13( a )。 这是因为另一个表面由空腔的侧面和另一个压紧表面限定,它们在压紧压力下基本上不会弹性变形。 \n\n [0070] 如上所述,紧凑 20  通过本发明的粉末压制方法获得的粉末具有均匀的密度分布,因此几乎不碎裂,破裂或变形。 此外,紧凑 20  即使在烧结过程中也均匀地收缩,因此在烧结体中几乎不会产生碎裂,破裂或变形 30 。 因此,可以以高生产率获得高质量的压块。 另外,本发明的粉末压制方法还可以处理填充密度较低的粉末材料。 因此,本发明的方法可以有效地用于制备将被加工成稀土烧结磁体的压块。 \n\n [0071] 此外,即使压块在烧结过程中收缩,压块仍可以保持由空腔的侧面限定的预定外部形状。 因此,只有成型体的表面已经与弹性变形的压制表面接触,才需要通过随后的精加工来进行处理(例如,研磨)。 因此,即使在假定两个挤压表面都发生弹性变形的情况下,也应仅加工压坯的两个相对表面,而不必加工压坯的侧面。 例如,如果通过常规压紧方法获得具有六个侧面的压块,则需要处理所有六个侧面。 相反,根据本发明的粉末压实方法,至多需要加工两个侧面,因此显着提高了生产率。 此外,可以减少加工余量(或研磨余量),从而也提高了材料的产量。 特别地,在假定两个压紧表面之一仅发生弹性变形的情况下,如图2所示,该压紧表面可以被压缩。  13( a ),仅需对一个表面进行精加工。 结果,可以进一步提高生产率。 \n\n [0072] 上述粉末压实方法可以用粉末压实装置进行。 100  如图所示。  2,举例。 无花果 2( a ), 2 ( b )和 2 ( c )示意性地示出了压实装置的截面结构 100 。 图。  2( a )表示粉末材料的状态 10  刚被装进一个洞 112 ; 图。  2( b )示出了向其施加压紧压力的状态; 和图。  2( c )表示一种状态 20  已卸载。 \n\n [0073] 粉末压实装置 100  包括:一个模具 110  带有内表面 110 a  定义空腔的侧面 112 ; 下拳 130  压机表面较低 130 a  定义空腔的底部 112 ; 和上拳 140  带有上压面 140 a  与下压面相对 130 a 。 如有必要,粉末压实设备 100  可以进一步包括磁场产生线圈 206  例如在压制过程中在磁场下使稀土合金粉末的颗粒排列。 \n\n [0074] 在该粉末压实装置中 100 ,只有上压面 140 a ,而不是内表面 110 a  或下压面 130 a 粉末材料在压制压力下发生弹性变形 10  单轴被压。 上下冲头 130  和 140  可以自由地插入开口或从开口中取出 112  死的 110  相对于内表面具有预定的间隙 110 a 。 开口和腔在此由相同的附图标记表示。 \n\n [0075] 在以下示例中,仅上压力机表面 140 a  弹性变形。 自然,只有下压面 130 a  可能会弹性变形。 或者,下压面和上压面 130 a  和 140 a  可能会弹性变形。 但是,上下压力面之一 130 a  和 140 a  由于在这种情况下可以简化随后的精加工过程,因此优选地使该材料弹性变形。 也就是说,为了通过随后的表面精加工工艺获得预定形状的压块,可以将两个表面之一用作表面精加工的参考平面,并且可以仅加工(例如研磨)另一个表面。 \n\n [0076] 粉末压实装置 100  可以与已知的模压设备相同,除了只是上压机表面 140 a  在压制压力下有选择地弹性变形,以在限定腔的表面之间的单轴压制过程中施加 112  和上压面 140 a  (即在压制过程中与粉末材料接触的表面)。 死 110 ,下拳 130  和基地 144  上冲头 140  可以由金属(例如,SUS 304)制成。 还有,死 110  上下拳 130  和 140  可以液压驱动。 \n\n [0077] 压面 140 a  通过设置压力介质层,可以在压紧压力下弹性变形。 142  在金属基材表面上具有适当的机械性能(用肖氏硬度很好地表示) 144 。 压力介质层 142  并非总是必须是固体,而是也可以是密封包装在适当袋子中的液体。 尽管如此,使用固体层仍然很方便。 例如,树脂层优选用作压力介质层。 142 。 优选将肖氏A硬度为25至90的树脂用作树脂层的材料。 特别优选肖氏A硬度为60〜85的树脂层。 具体地,树脂层优选由包括聚氨酯橡胶的聚氨酯树脂制成。 \n\n [0078] 在下文中,粉末压实设备的操作 100  参照图1至图6,对本发明的粉体的压粉方法及本发明的粉体压粉方法进行说明。  2( a )通过 2 ( c )。 \n\n [0079] 首先,如图3所示,  2( a ),粉状物料 10  被装入空腔 112 。 可以通过各种已知方法中的任何一种来装载粉末。 然而,本发明的粉末压实设备和方法可以有效地用于压实粉末材料。 10  以较低的填充密度装填在那里(或形成薄的压块)。 因此,将描述为此目的优选采用的加载方法。 使用的粉末材料没有特别限制。 这是因为根据本发明的粉末压制方法,即使是由流动性(即负载性和/或压制性)特别差的粉末材料也可以获得高质量的压块。 \n\n [0080] 可以将包括通过上述的带铸法制备的稀土合金粉末的材料(例如,基于R-Fe-B的合金粉末)用作粉末材料。 为了增加流动性(即负载性和致密性),在粉末材料中,以预定量(例如,最多0.12 wt%的脂肪族酯)添加润滑剂到稀土合金粉末的表面。 通常使用预定的粒度(例如2μm至6μm)。 任选地,并非不可能使用通过将稀土合金粉末与润滑剂或粘合剂制粒而获得的材料。 然而,这种材料不是优选的,因为需要更高的磁场来将造粒的颗粒分解成初级颗粒,从而使那些稀土合金粉末颗粒在磁场下取向。 另外,如果包含在润滑剂或粘合剂中的,要添加到稀土合金粉末中的碳残留在烧结体中,则该碳可能使磁性能劣化。 因此,一般而言,这些添加剂的量优选尽可能少。 以这种方式限制添加剂如润滑剂的量是稀土合金粉末难以压制成所需形状的原因之一。 \n\n [0081] 装载粉末材料的工艺步骤可以通过使用筛子或进料箱来进行,如日本专利公开第59-40560号,日本专利公开第10-58198号,日本实用新型公开中所述。  63-110521号和日本特开2000-248301号。 通过采用这种加载技术,可以以足够低的填充密度加载粉末,以使其取向方向在磁场下对准。 \n\n [0082] 特别地,当应当装载流动性(或填充密度)差的粉末材料(例如通过带式铸造工艺制备的稀土合金粉末)时,该方法在由日本专利申请公开第2000-248301号中公开。 优选使用本申请的申请人。 在该方法中,将在底部具有开口的供料器箱定位在腔体上方,并且将杆构件在该供料器箱体的底部水平地往复运动,从而将合金粉末材料从该供料器箱供入腔体中。 以这种方式,合金粉末可以以相等的压力从供料箱顺序地(即,从一部分粉末开始靠近底部)装载到型腔中。 结果,可以以相对均匀的密度用粉末填充空腔,而不会引起任何结块或桥接。 \n\n [0083] 为了获得薄的压坯,优选在装载过程步骤中利用腔来测量与腔的内部体积相对应的量的粉末材料。 例如,如果如上述方法使条形构件在腔体上往复运动,则腔体可以填充有已被供给到其上的粉末材料,而多余的部分被切成薄片。 因此,腔可以相对均匀地填充有预定量的粉末材料。 应当注意,如果通过这种方法装载粉末材料,则在装载的粉末材料的表面上(即,在空腔的上表面上)可能形成不均匀的装载重量(或填充密度)分布。  )沿着杆构件来回的方向移动。 因此,如果使用传统的压模设备对这种粉末材料进行单轴压制,其中压制表面在压制压力下不会使压制表面发生弹性变形,那么所得的压块应具有不均匀的密度分布,并且可能会碎裂,破裂或变形。  。 然而,根据本发明的粉末压制方法,可以获得具有均匀密度分布的压坯。 特别是在形成薄的压块时,粉末材料表面附近的不均匀填充密度分布应具有显着效果。 因此,本发明在这种情况下特别有效。 \n\n [0084] 根据上述各种加载技术中的任何一种,粉末材料可以以0.20至0.35的相对密度加载到腔体中。 如本文所用,“相对密度”是指粉末材料的填充密度与其真实密度的比率。 如果用空腔测量粉末材料,则其填充密度是通过将空腔中粉末材料的质量除以空腔的内部体积而得出的。 以这样的相对密度加载的粉末材料即使在通过带铸法制备的稀土合金粉末的情况下,也可以在磁场下使其取向方向充分地取向。 \n\n [0085] 接下来,如图2所示,将其设置为0。  2( b ),降低上冲头 140 ,例如粉末材料 10  已经加载到腔中 112  在上下按压面之间单轴按压 130 a  和 140 a 。 在该单轴压制步骤中,将通常以0.20至0.35的相对密度装载的粉末材料单轴压制。 结果,可获得具有0.5至0.7的相对密度(即,压坯的生坯密度与其真实密度之比)的压坯。 压实压力可以在50kgf / cm的范围内 2  至5,000 kgf / cm 2  (即在4.9 MPa至490 MPa的范围内)。 例如,如果使用通过薄带连铸法制备的稀土合金粉末(例如,R-Fe-B基合金粉末),则压制压力优选在500kgf / cm的范围内。 2  至1,000 kgf / cm 2  (即49 MPa至98 MPa的范围)。 在那种情况下,可以获得密度为真实密度的约52%至约62%的压块。 \n\n [0086] 可选地,在开始单轴压制过程之前,可以将润滑剂(可以与应用于稀土合金粉末表面的润滑剂相同)喷涂到粉末材料上 10  在腔中 112  并在上冲头的表面上 140 。 作为树脂层的材料,特别优选聚氨酯树脂。 142  因为氨基甲酸酯树脂表现出适当的肖氏硬度,优异的耐磨性和良好的耐润滑剂性。 \n\n [0087] 在此单轴压制过程中,上压制表面 140 a 可能是树脂层的表面 142 例如,由于粉末材料的填充密度分布不​​均匀而导致压力分布不均匀而导致弹性变形 10 。 另一方面,下压面 130 a  和内表面 110 a  开场 112  死的 110 可能由SUS制成的,即使那些表面与粉末材料接触,也基本上不会在压紧压力下发生弹性变形。 10 。 因此,粉末材料的底部和侧面 10  被压实保持其预定形状。 但只是其表面与上压机表面接触 140 a  变形以抵消不均匀的密度分布的方式。 因此,最终的紧凑型 20  具有均匀的密度分布,并且其碎裂,破裂或变形可被最小化。 \n\n [0088] 尤其是,即使所得的压坯足够薄以满足D≤| S 1/2 | / 3(其中D是沿压制轴方向测量的压块厚度(mm),S是面积(mm) 2 )),仍然可以充分减少其碎裂或破裂。 树脂层的厚度 142  优选的是,其最大密度是成形体的厚度D(mm)的两倍。 树脂层的厚度 142  压块的厚度不应大于压块厚度D(mm)的两倍,因为在这种情况下不能有效地传递压力。 树脂层的厚度 142  作为树脂层,没有特别限定。 142  可以抵消不均匀的填充密度分布。 但是,树脂层的厚度 142 至少为成形体的厚度D(mm)的三分之一。 这是因为树脂层太薄 142  可能无法充分有效地用作压力介质。 \n\n [0089] 应当注意,为了使稀土合金粉末颗粒在磁场下取向,在单轴压制过程中将磁场施加在外部。 例如,可以垂直于单轴挤压方向施加大约0.8MA / m至大约1.3MA / m的磁场。 在施加如此高的对准磁场的情况下,如果所使用的模具的饱和磁化强度低于所装载的粉末,则在对准过程中粉末被吸引到对准方向上的腔体两端(即其侧面) 处理。 以这种方式,粉末的填充密度可在施加对准磁场时进一步变化。 即使这样,根据本发明也可以得到密度均匀的压粉体。 \n\n [0090] 接下来,得到的紧凑型 20  从型腔中卸载。 可以通过各种已知技术中的任何一种来执行该处理步骤。 但是,由流动性差的材料(例如通过带式浇铸工艺制备的稀土合金粉末材料)制成的密度相对较低的压坯(其生坯密度为其真实密度的50%至70%), 很脆。 因此,优选从腔体卸载这种压块。 112  通过压紧技术,其中模具 110  在上下压榨面之间保持一定压力(例如压实压力的约1%至约20%)降低 130 a  和 140 a  这样的紧凑的表面 20  已经与内表面接触 110 a  开场 112  如图3所示被暴露。  2( c )。 在这种情况下,只有上压力机表面 140 a  优选地,弹性变形。 这是因为如果要弹性变形的挤压表面是树脂层的表面,则树脂层的表面将不会像金属表面那样紧密地粘附到成型体上。 因此,可以避免压粉体牢固地粘附在树脂层上而被模具上的树脂层抬起的情况。 也就是说,压块不会掉落和碎裂或破裂。 另外,如果下压面 130 a  弹性变形,然后压块的底部 20  会有些不平。 在这种情况下,粉饼底部的部分 20  将位于比模具上表面低的位置 110 。 因此,紧凑 20  从型腔中卸下时容易碎裂或破裂 112 。 \n\n [0091] 另外,如果上压面 140 a  由树脂层的表面定义 142 ,树脂层 142  离开了空腔 112  在压紧压力下,在垂直于压力机轴线方向的水平方向上,膨胀剂也膨胀。 由于树脂层的这种变形 142 ,紧凑 20  可能会在其周围破裂或破裂。 为了最大程度地减少碎裂或龟裂,提供了防止树脂层的部件 142  优选设置在水平方向(即,垂直于压力机轴线方向)上扩展的角速度。 例如,树脂层 142  优选地被安装在凹部中,该凹部设置在基座中 144 ,使树脂层表面变形 142  (对应压机表面 140 a 通过凹部的壁使在垂直于压力机轴线方向的方向上的最小化)减小。 相反,树脂层 142  优选的是,仅允许凹部内部的压力仅在挤压轴线方向上变形。 \n\n [0092] 在下文中,将描述通过带式铸造工艺制备的用于制造基于R-Fe-B的合金粉末的烧结磁体的方法的实施方式。 \n\n [0093] 首先,具有以下成分的合金薄片:剩余量为30重量%的Nd,1.0重量%的B,1.2重量%的Dy,0.2重量%的Al,0.9重量%的Co和Fe,以及不可避免的杂质。 通过带材铸造法制备(例如参见美国专利号5,383,978)。 更具体地,已经通过已知方法制备的合金,以使其具有包括30重量%的Nd,1.0重量%的B,1.2重量%的Dy,0.2重量%的Al,0.9重量%的Co, 铁和不可避免的杂质作为余量通过高频熔化工艺熔化以获得熔化物。 作为稀土合金,不仅具有这种组成的合金,而且具有具有在美国专利No.5,816,337中公开的组成的合金。 美国专利4,770,723或4,792,368可被有效地使用。 \n\n [0094] 将该稀土合金的熔体加热至1350°C,并保持在该温度,然后在单辊上以约1 m / sec的圆周速度,500°C / min的冷却速度以及 200℃的过冷速度,由此获得厚度为0.3mm的合金薄片。 通过进行吸氢处理使该合金薄片脆化,从而得到合金粗粉。 然后,通过在氮气气氛中用喷射磨机将合金粗粉细粉碎,从而获得平均粒径为3.5μm的合金粉。 这种合金粉末的真实密度为7.5 g / cm 3 。 优选通过日本专利申请No.11-62848中公开的设备和方法进行细粉碎过程。 通过快速冷却工艺(例如带钢铸造工艺)(以10的冷却速率)制备的合金细粉 2  至10 4 ℃/秒),具有窄的粒径分布并且显示出差的可压实性,但是仍然可以有效地用作具有良好磁性能的磁体的材料。 \n\n [0095] 接下来,为了改善以这种方式获得的合金粉末的流动性(即,负载性和/或致密性),在合金粉末的表面上涂覆润滑剂。 例如,脂族酯可用作润滑剂并用石油溶剂稀释。 可以在摇动混合器中将混合物以0.5重量%至5.0重量%(基于润滑剂)添加至所得合金粉末,从而用润滑剂涂覆合金粉末的表面。 己酸甲酯可用作脂肪族酯,异链烷烃可用作石油溶剂。 己酸甲酯与异链烷烃的重量比可以为1:9。 \n\n [0096] 然而,润滑剂不限于任何特定类型。 例如,可以使用用任何溶剂稀释的任何脂族酯。 优选的脂族酯的例子不仅包括己酸甲酯,而且包括辛酸甲酯,月桂酸甲酯和月桂酸甲酯。 作为溶剂,可以使用石油溶剂如异链烷烃和环烷溶剂。 脂族酯和溶剂可以以1:20至1:1的重量比混合。 代替液体润滑剂或除了液体润滑剂之外,还可以使用固体润滑剂,例如硬脂酸锌。 当使用液体润滑剂时,可以不使用溶剂。 \n\n [0097] 可以适当地确定要添加的润滑剂的重量。 然而,为了提高可压实性和磁性能,待压实的粉末材料优选包括相对于合金粉末的总重量不大于0.12wt%的润滑剂。 \n\n [0098] 接下来,使用粉末压制设备进行单轴压制工艺 200  根据本发明的一个实施例,如图1和2所示。  3( a )和 3 ( b )。 图。  3( a )是粉末压实装置的示意性透视图 200  和图。  3( b )是粉末压制装置的示意性截面图 200 。 \n\n [0099] 粉末压实装置 200  包括粉末材料进料机构 300 。 模具 202  与基板相邻设置 201 。 一死 202 a  安装在模具中 202  并设有一个开口(模具孔) 202 b  贯穿死 202 a  垂直。 下拳 203  设置在该模具孔的下方 202 b  以便在模孔内自由地上下移动 202 b 。 空腔 204  具有任意内部体积的是由内表面定义的 204 a  这个死穴的 202 b  和压机表面 203 a  下冲头 203 。 在所示的示例中,薄矩形腔 204  被定义为。 空腔 204  例如,可以具有80mm的长边长度,52.2mm的短边长度和16mm的深度。 \n\n [0100] 将合金粉末送入型腔后 204  通过使用粉末材料进料机构 300 一拳 205  被引入空腔 204 ,并将合金粉末材料单轴挤压在挤压表面之间 205 a  上冲头 205  和压机表面 203 a  下冲头 203 ,从而形成合金粉末材料的压块。 一对磁场产生线圈 206  位于模具的两侧 202 a  垂直于单轴挤压方向并平行于空腔的长边方向施加磁场 204  如图2中箭头B所示。  3( a )。 \n\n [0101] 死 202 a ,下拳 203  和基地 214  上冲头 205  由不锈钢制成(例如SUS 304)。 树脂层 212  上冲头 205  由肖氏A硬度为75至80的聚氨酯树脂制成。  2( a )通过 2 ( c ),此树脂层 212  根据填充密度分布,在压实压力下弹性体变形,从而获得具有均匀密度的压实体。 \n\n [0102] 在此示例中,使用粉末材料进料机制的加载技术 300  使用在日本特开2000-248301号公报中公开的方法。 但是,本发明绝不限于这种装载技术,而是可以通过各种其他方法中的任何一种来装载粉末材料。 \n\n [0103] 粉末物料进给机构 300  包括一个接驳盒 310  在基板上 201 。 该馈线盒 310  由气缸杆驱动 311 a  气缸的 311  以便在模具上方的位置之间来回移动 202 a  和待机位置。 供应商 330  用于供应接驳盒 310  进料箱待机位置附近装有稀土合金粉末 310 。 \n\n [0104] 接驳杯 331  放在天平上 332  供应商 330  使合金粉末材料一点一点地落入进料杯中 331  通过振动槽 333 。 该测量操作是在进纸器盒中进行的 310  消失了 202 a 。 当接驳箱 310  回到待机位置,进纸匣 310  由机器人再次提供 334 。 放入进料杯的合金粉末材料的重量 331  设定为等于从进料箱中取出的合金粉末材料的重量 310  通过一次按压操作。 也就是说,给料箱中合金粉末材料的重量 310  始终保持不变。 由于恒定数量的合金粉末材料始终存储在进料箱中 310 ,对滴入型腔的粉末材料施加恒定压力 204  因为引力。 结果,将恒定重量的合金粉末材料加载到型腔中 204 。 \n\n [0105] 摇床 320 ,位于进纸匣内 310 固定在两个支撑杆上 312  通过连接杆 322 a 。 两个支撑杆 312  平行延伸穿过一对侧壁 310 a ,面向进纸匣的方向 310  是往复的。 这两个支撑杆的两端 312  用连接件拧紧 313 。 第二气缸 315  固定在固定件上 314 ,它附着在侧壁的外表面 310 a  在图的右侧。  3( b )。 气缸轴 315 a  气缸的 315  固定在连接件上 313  在右手侧。 通过供气管供气 315 b  到气缸的两端 315 ,气缸轴 315 a  可以往复运动,从而使振动器往复运动 320 。 \n\n [0106] 上下一对酒吧成员 321  提供给振动筛 320  从而平行于水平方向即垂直于腔体长边方向的方向延伸 204 。 这些律师 321  可以是圆柱棒,每个圆柱棒具有例如0.3mm至7mm的直径的圆形横截面。 上下一对酒吧成员 321  由支持成员组合在一起 322  变成框架形状。 通过气缸轴的往复运动 315 a  气缸的 315 ,这些酒吧成员 321  也可以在进纸匣内水平地来回移动 310 。 酒吧成员的音调 321  在它们移动的方向上测得的值基本上等于空腔的长边长度 204 。 下对酒吧成员 321  设置成使得其下端位于围绕腔的模具的表面上0.2mm至5mm 204 。 还有吧员 321 以及支持成员 322 ,由不锈钢制成(例如SUS 304)。 \n\n [0107] 安N 2  供气管 323  将惰性气体供应到进料箱 310  连接到右侧侧壁中心上方的点 310 a  进纸匣的 310 。 以高于大气压的压力供应惰性气体,以保持进料箱内部的惰性气体气氛 310 。 因此,即使在往复振动器之间产生一些摩擦 320  和合金粉末材料,不应发生烧结。 另外,即使是接驳箱 310  夹在进料箱底部之间的合金粉末材料移动 310  和基板 201 ,摩擦也不应引起点火。 此外,即使在进料箱中的粉末颗粒之间产生了一些摩擦 310  由于进纸匣的运动 310 ,也不应触发。 \n\n [0108] 盖子 310 d  提供以关闭粉末存储 310 接驳盒A 310  密闭。 在供应合金粉末材料时,该盖 310 d  在图5中向右移动。  3( a )使粉末存储的上表面 310 一开。 为此,第三个气缸 317  驱动并打开盖子 310 d  为侧壁提供 310 b ,它位于图的正面。  3( a )。 气缸 317  和盖子 310 d  通过固定构件连接在一起 318  彼此搞砸了 为了保持惰性气体气氛,此盖 310 d  通常位于粉末存储上方 310 接驳盒A 310 。 仅在供应粉末时,盖子 310 d  向右移动。 应当注意,在盖的另一侧上设有导向装置(未示出)。 310 d 与第三个气缸相对 317 ,让盖子 310 d  由第三气缸驱动和打开 317  平稳地移动。 通过供气管供气 317 b  到气缸的两端 317 ,驱动气缸轴(未显示),从而打开或关闭盖子 310 d.  \n\n [0109] 另外,板成员 319 由氟树脂制成的厚度为5毫米的螺丝钉与进纸匣的底部固定在一起 310  这样就不会有合金粉末材料吞入进料箱 310  或基板 1  (或模具 202 ),通过滑动进纸器盒在它们之间的间隙中 310  在基板上 201  与氟树脂板构件 319  插在他们之间。 \n\n [0110] 在下文中,将描述如何利用该粉末材料进给机构执行粉末进给操作。 300 。 \n\n [0111] 首先,通过氮气引入惰性气体 2  供气管 323  入粉仓 310 接驳盒A 310 。 在这种状态下,盖子 310 d  进纸匣的 310  打开,从而进给预定量的合金粉末材料,该材料已由机器人测量 334  带接驳杯 331 ,入粉仓 310 A.一旦提供了合金粉末材料,盖子 310 d  关闭以保持粉末存储器内的惰性气体气氛 310 A.应该注意的是,惰性气体总是被供应到粉末存储器中 310 A,不只是在送纸箱内 310  在空腔上移动 204 ,从而将潜在的合金粉末材料烧成最小。 或者,也可以将Ar或He用作惰性气体。 \n\n [0112] 在这种状态下,气缸 311  开始驱动进纸器盒 310  朝向空腔 204  死的 202 。 在这种情况下 310  由酒吧成员驱动 321  位于进给方向的前端,则进给箱中的合金粉末材料不会向进给方向的后端移动 310  动作。 因此,合金粉末材料可以被运送到腔体中 204  不均匀性最小化。 \n\n [0113] 后进纸匣 310  位于空腔上方 204  这样,进料箱中的合金粉末材料 310  被加载到空腔中 204  在惰性气体气氛中,同时水平移动棒构件 321  例如,在供纸盒内部五到十五次 310 。 律师协会成员的最终休息位置 321  应该最终定位在水平移动之后,并定义为所有这些杆成员 321  远离开口 204 a  腔的 204 。 以此方式,合金粉末材料可以被供应到腔体中 204  例如,在相对均匀的填充密度下,不存在着火的风险。 但是,应该指出的是,律师团成员 321  切下从型腔溢出的多余合金粉末材料 204 。 因此,在已经加载到型腔中的合金粉末材料的表面上形成痕迹(即,加载重量或填充密度的不均匀分布)。 204  在酒吧成员的方向上 321  已移动(即与进纸匣的方向相同 310  已出动)。 为了使这种不均匀分布最小化,杆构件的移动方向 321  最好是空腔的短边方向 204 。 \n\n [0114] 接下来,在将合金粉末材料加载并供应到型腔中之后 204 ,酒吧成员 321  移向进纸匣后退方向的前端 310 从而防止在(向后)移动方向的前端的合金粉末材料向(向后)移动方向的后端向后退。 之后,进纸匣 310  向后驱动,上冲头 205  降低,从而压实型腔中的合金粉末材料 204 。 同时,合金粉末材料被新供应到供料箱中 310 。 压制过程将在后面详细描述。 \n\n [0115] 通过重复执行这些操作,可以连续地单轴挤压合金粉末材料。 在上述示例中,只有一个空腔 204  提供。 但是,即使在多个腔体的情况下,也可以使用相同的过程 204  提供。 但是,在那种情况下,有多个律师会员 321 最好以基本上对应于多个腔体的间距的间距设置。 204  在进纸匣的方向上测量 310  动作。 \n\n [0116] 以此方式,可以利用型腔来测量合金粉末材料。 204 ,并且可以装入空腔 204 ,等于腔体内部体积的量 204 。 在这种情况下,填充密度可以为2.2 g / cm 3  至2.3克/厘米 3  填充率(即相对密度与真实密度之比)可以为0.29至0.31。 \n\n [0117] 在下文中,将描述单轴压制过程。 \n\n [0118] 在该优选实施例中,通过降低上冲头 205 ,粉末材料在上下压力表面之间单轴挤压 205 a  和 203 a 。 在此单轴压制过程中,仅上压制表面 205 a  发生弹性变形,但内表面 204 a  模具孔的 202 b  和下压面 203 a  尽管所有这些表面都与粉末材料接触,但它们基本上不会弹性变形。 \n\n [0119] 上冲头的结构 205  将参考图2进行描述。 图4 图4是上冲头的分解立体图。 205 。 \n\n [0120] 上拳 205  包括树脂层 212  和基地 214 。 树脂层的表面 212  定义上压力机表面 205 a 。 基地 214  由不锈钢(例如SUS 304)制成,而树脂层 212  由肖氏A硬度(根据ISO 868)为75至80的氨基甲酸酯树脂制成。由Nihon Ciba Geigy Limited生产的热固性氨基甲酸酯树脂Ureol可用作氨基甲酸酯树脂。 \n\n [0121] 树脂层 212  包括平板部分 212 a  和锚部分 212 b 。 锚部分 212 b  安装在孔中 214 c  基地的 214  并可能固定在基座上 214  必要时用粘合剂。 锚部分 212 b  为了提供足够的强度,优选提供它们,但是也可以省略。 基地 214  如图所示。  4包括身体 214 a  和结束部分 214 b  具有树脂层的表面 212  是安全的。 可选地,这些部分可以组合在一起。 \n\n [0122] 树脂层的厚度 212  (即平板部分的厚度 212 a )可能约为5毫米。 每个锚定部分 212 b  可以具有例如约5mm的直径和约10mm的高度的圆柱形状。 平板部分 212 a  和锚部分 212 b  集成在一起。 这样的树脂层 212  例如,可以通过流延工艺由上述热固性聚氨酯树脂制成。 \n\n [0123] 该树脂层 212  肖氏A硬度为75至80。因此,如果以660 kgf / cm的压力压制合金粉末材料 2  (即64.7 MPa),树脂层 212  根据合金粉末材料的不均匀填充密度分布弹性变形,从而在合金粉末材料上施加均匀的压力。 通过施加压力预定的时间,密度为4.1 g / cm的压块 3  可以获得。 也就是说,粉末可以压实到腔体内部体积的约50% 204  这种单轴压制过程的结果。 可以通过常规技术控制该单轴压制过程。 \n\n [0124] 单轴压制完成后,模具 202  压实压力保持在33 kgf / cm时降低 2  (即3.24MPa),从而使成型体的侧面露出。 之后,上拳 205  抬起以卸载粉盒。 在这种情况下,树脂层的附着力 212  (即上压力机表面 205 a )的压实度要比不锈钢平面(即下压面)弱 203 a )到紧凑型。 因此,压坯永远不会随上冲头上升 205  永不掉落或掉落。 \n\n [0125] 在压紧技术中,当压坯被夹在上下冲头之间时从模孔中取出,当上冲头 205  离开腔 204 ,压块从内表面施加的压力释放 204 a  腔的 204 。 结果,由于压制体的回弹力,树脂层 212  在水平方向或垂直于压力机轴方向扩展。 这种膨胀会拉动与树脂层接触的成型体的表面 212 ,因此有时会导致坯块周围碎裂。 \n\n [0126] 但是,使用上冲头 405  如图所示。  5代替上拳 205  如图所示。 参照图4,可以使由树脂层的变形引起的碎裂最小化。 \n\n [0127] 上拳 405  包括树脂层 412  和一个基地 414 。 树脂层的表面 412  定义上压力机表面 205 a 。 基地 414  由不锈钢(例如SUS 304)制成,而树脂层 412  由邵氏A硬度为75至80的聚氨酯树脂制成。 \n\n [0128] 树脂层 412  包括平板部分 412 a  和锚部分 412 b 。 侧面 412 c  平板部分的 412 a  相对于压力机表面定义约60度的锥角 405 a.  \n\n [0129] 基地 414  包括凹入部分 414 d  接收树脂层 412  在其中。 锚部分 412 b  树脂层 412  安装在孔中 414 c  基地的 414  并可能固定在基座上 414  必要时用粘合剂。 基地 414  如图所示。  5包括身体 414 a  和结束部分 414 b  具有树脂层的表面 412  是安全的。 可选地,这些部分可以组合在一起。 \n\n [0130] 如果树脂层 412  被引入凹部 414 d  基地的 414  这样,凹部的侧面 414 d  可以防止树脂层 412  由于在压紧过程中被压制的压块的回弹力,在水平方向或垂直于压制轴线方向上的膨胀不发生。 \n\n [0131] 或者,上拳 505  如图1和2中示意性所示。  6( a )和 6 ( b )也可以使用。 上拳 505  包括一个基地 514 ,树脂层 512  和变形最小化部分 515 设置为基本围绕树脂层 512  (压机表面除外 505 a )。 最小变形部 515  由具有比树脂层的材料高的弹性模量的材料(例如树脂或金属)制成 512 。 因此,变形最小化部分 515  最小化树脂层 512  由于被压制的压块的回弹力,在水平方向或垂直于压制轴线方向上的膨胀不发生。 \n\n [0132] 作为另一种选择,上拳 605  如图2示意性所示。 也可以使用7。 上拳 605  包括一个基地 614  由不锈钢(例如SUS 304)和树脂层制成 612  具有多层结构。 \n\n [0133] 树脂层 612  包括第一树脂层 612 a  第二树脂层 612 b ,它们彼此堆叠在基座上 614  硬度值互不相同。 具体而言,第一树脂层的硬度 612 a  高于第二树脂层 612 b 。 因此,第一树脂层 612 a  在本文中将被称为“硬树脂层” 612 a  第二树脂层 612 b  在本文中将被称为“软树脂层” 612 b 。 硬质树脂层 612 a  由邵氏A硬度为70至90的聚氨酯树脂制成,而柔软的树脂层 612 b  由肖氏A硬度为25至60的聚氨酯树脂制成。  7,硬质树脂层表面 612 a  定义上压力机表面 605 a  在这个树脂层中 612 。 \n\n [0134] 如上所述,当从腔中抽出上冲头时,树脂层可沿水平方向或垂直于压力轴方向膨胀。 为了最大程度地减少这种膨胀,上冲 405  和 505  如图所示。 图5和图6所示的实施例包括高硬度变形最小化部分,以容纳树脂层的外围。 然而,当采用这些布置中的任何一种时,挤压表面的外围和中央区域在挤压轴线方向上具有彼此不同的弹性模量。 对已加载到型腔中的合金粉末施加均匀的压力可能不是优选的。 \n\n [0135] 相反,当上拳 605  包括树脂层 612  具有如图1所示的多层结构。 使用图7所示的树脂层的弹性模量 612  可以在整个压机表面上均匀化 605 a 。 因此,所得压块可以具有更均匀的密度。 \n\n [0136] 另外,在上拳 605 ,上压面 605 a  与压块接触是由硬质树脂层的表面定义的 612 a  和软树脂层 612 b  在硬质树脂层之间设置 612 a  和基地 614 。 通过采用这种布置,即使树脂层 612  上冲头沿水平方向或垂直于压机轴线方向扩展 605  从模腔中取出树脂层的表面 612  (即硬质树脂层的表面 612 a )不会因该扩展而损坏,或者紧凑型将不会碎裂。 \n\n [0137] 无花果 8( a )和 8 ( b )显示粉末材料 10  可以用上冲头压实 605 。 如图1所示。  8( a ),当对粉末材料施加压力时 10  在型腔中,柔软的树脂层 612 b  根据粉末的填充密度的变化弹性变形。 但是,由于硬树脂层 612 a  提供软树脂层 612 b  不会过度变形。 因此,在压制表面上不会与压块接触(即在硬质树脂层的表面上)形成过度的凹凸。 612 a )。 \n\n [0138] 应当注意,压实过程中压制表面的形状可以通过调节硬质树脂层的厚度比例来控制。 612 a  相对于软树脂层 612 b , 例如。 如果粉末的填充密度变化不大,则硬质树脂层 612 a  例如,可以具有相对较小的厚度。 \n\n [0139] 而上拳 605  通过降低模具从型腔中取出 110  以这种方式进行压实处理之后,树脂层 612 a  和 612 b  如图1所示,由于压块的回弹力或树脂层本身的膨胀,它们将沿水平方向或垂直于压制轴线方向延伸。  8( b )。 \n\n [0140] 然而,与压块接触的压制表面没有过度变形。 因此,即使上述的膨胀力作用在按压面上,也不会损坏成型体或树脂层。 另外,还可以有利地从冲头中取出压块。 \n\n [0141] 另外,由于软树脂层 612 b  提供硬树脂层的膨胀力 612 a  可能会放松。 在压实过程中,软树脂层 612 b  变形很大,但硬质树脂层 612 a  变形程度很小。 因此,可以减少硬质树脂层本身的膨胀。 因此,硬树脂层表面上的应力 612 a  (即,压制表面)可以被减少并且该表面的裂纹可以被最小化。 结果,可以防止压块碎裂。 \n\n [0142] 在上述示例中,两个树脂层 612 a  和 612 b  被使用。 或者,树脂层 612  具有多层结构的树脂层可以由三个或更多个具有彼此不同的硬度值的树脂层组成。 另一种选择是上拳 705  具有树脂层 712  如图1所示,也可以使用硬度沿压制轴方向逐渐变化的材料。  9.在这种情况下,树脂层的硬度 712  最好从表面逐渐减小 705 a  树脂层 712  朝向接合面 705 b  树脂层之间 712  和基地 714 。 \n\n [0143] 而且,当如上所述利用包括树脂层的上冲头进行压实处理时,粉末材料可以在易于变形的薄布构件(即,能够随着织物的弹性变形而改变其形状的构件)之后被压实。 树脂层)被夹在树脂层的表面和粉末材料之间。 通过以这种方式执行压紧过程,压紧体将不与树脂层的表面直接接触,因此,可以减小它们之间的粘附性。 作为布构件,可以使用通常在湿式成型法中使用的滤布(例如毡)。 \n\n [0144] 在上述的单轴压制过程中,由磁场产生线圈施加约1.3MA / m的磁场 206  垂直于单轴挤压方向(即挤压轴方向)。 \n\n [0145] 在以这种方式获得的成形体中,很少发生碎裂,破裂或变形,并且在磁场下合金粉末颗粒的取向方向也已经充分对准。 \n\n [0146] 例如,以这种方式获得的成型体在约1,000℃至约1,180℃的温度下烧结约1至2小时。 然后,在约450℃至约800℃的温度下对所得的烧结体进行时效处理约1至8小时,从而获得基于R-Fe-B的烧结磁体。 为了减少烧结磁体中所含的碳量并由此改善其磁性,优选在对成形体进行烧结处理之前,将覆盖合金粉末表面的润滑剂烧掉。 可以在约200℃至约600℃的温度和约2Pa的压力下进行约3至6小时的烧除工艺。 \n\n [0147] 通过本发明的磁体制造方法获得具有均匀密度分布的成型体。 因此,压粉体在烧结过程中几乎不碎裂,破裂或变形。 结果,可以以高生产率生产表现出优异磁性能的烧结磁体。 \n\n [0148] 在下文中,将参照图3至图6描述本发明的粉末压制方法的效果。  10( a )和 10 ( b )。 图。  10( a )示出了通过根据上述实施例的磁体的制造方法获得的烧结体的尺寸的估计变化的结果以及对于通过常规制造工艺获得的烧结体的估计结果。 图。  10( b )是示出用于估计尺寸变化的方法的示意图。 \n\n [0149] 在制造代表本发明实例的烧结体时,上冲头 205  如图所示。  4被用作粉末压实设备的上冲头 200 。 另一方面,在制造代表传统示例的烧结体时,具有冲压表面的上冲头由不锈钢(SUS 304)制成并且不包括树脂层。 212  被用来代替上拳 205  粉末压实设备的 200 。 \n\n [0150] 在图 10( a ),横坐标表示树脂层的肖氏A硬度 212  右图所示为没有树脂层的打孔结果(即传统示例)。 另一方面,图3的纵坐标是0。  10( a )表示尺寸变化Rav(mm)。 \n\n [0151] 作为树脂层的材料 212 分别使用肖氏A硬度为25的硅橡胶,肖氏A硬度为60、70和90的聚氨酯橡胶以及肖氏A硬度超过100的树脂(例如Jurakon™)。 \n\n [0152] 通过以下方式获得尺寸变化R。 \n\n [0153] 首先,如图3所示,  10( b ), 15  为每个烧结体设置测量点 30 ,以及在磁场方向(三个点),供料器移动方向(五个点)和厚度方向中的每个方向上测得的最大和最小厚度之间的差(在本文中称为变化R)  (15分)。 对于五个烧结体中的每一个,在各个方向上获得这些尺寸变化R。 30  将其平均值作为尺寸变化Rav。 \n\n [0154] 从图可以清楚地看出:  10( a ),当使用肖氏A硬度为90以下的树脂层时,与没有使用树脂层的情况或使用树脂层的情况相比,在磁场方向和进料方向上的尺寸变化Rav较小。 使用肖氏A硬度超过100的材料。 相反,在使用肖氏A硬度为90以下的树脂层的情况下,厚度方向的尺寸变化Rav增大。 这些结果表明,在单轴压制过程中,肖氏A硬度为90以下的树脂层根据填充密度分布的不均匀而弹性变形。 另外,在使用肖氏A硬度超过100的树脂层(例如,Jurakon TM)的情况下,厚度方向的尺寸变化Rav与未设置树脂层的情况几乎相同。 因此,可以看出肖氏A硬度超过100的树脂层在压制过程中几乎没有弹性变形,并且没有充分地抵消填充密度分布的不均匀。 \n\n [0155] 此外,如果使用肖氏A硬度为70以下的树脂层,则尺寸变化量Rav大致恒定,在磁场方向和进料方向上的值较小,而在厚度方向上的尺寸变化量Rav随着厚度的增加而增大。 肖氏A硬度降低。 也就是说,当使用肖氏A硬度为70的树脂层时,在磁场方向和进料方向上的尺寸变化Rav足够小,并且在厚度方向上的尺寸变化Rav可以相对较小。 因此,据信树脂层的肖氏A硬度的优选范围优选由肖氏A硬度70作为其中心值,即60至85。 \n\n [0156] 图。  11( a )显示了烧结体的外部(外围)形状,该烧结体是通过使用沿压力轴方向观察到的肖氏A硬度为70的树脂层获得的。 图。  11( b )示出了沿相同方向观察时通过使用没有树脂层的上冲头获得的烧结体的外周形状。 \n\n [0157] 在每个附图中。  11( a )和 11 ( b ),粗线表示其关联的烧结体的外周形状与预定的外周形状的偏差,如实线所示。 该偏差在此被夸大了五倍。 获得每个烧结体的外周形状作为仪器的痕迹 60 沿图2中箭头所示方向移动。 例如,如图12所示,在保持与烧结体的侧面接触的同时 30  如图 12 \n\n [0158] 如当在图1和图2中所示的结果是 11( a )和 11 ( b 相互比较,通过本发明的制造方法获得的烧结体比通过传统的制造方法获得的烧结体畸变小得多。 这些结果表明,通过使用适当的可弹性变形的树脂层进行单轴压制工艺,可以获得具有均匀密度的成型体。 \n\n [0159] 可以看出,在通过本发明的制造方法获得的烧结体中,仅在压制过程中已经与弹性可变形压制表面接触的一个表面是不平坦的,而其另一表面具有预定的形状(即, 平面)。 因此,仅通过研磨已经与可弹性变形的压制表面接触的表面,就可以获得具有预定尺寸和形状的烧结体。 相比之下,通过常规制造方法获得的烧结体的所有表面都严重变形,如图1所示。  11( b )。 因此,为了获得具有预定尺寸和形状的烧结体,需要对所有这些表面进行加工。 因此,根据本实施例的制造过程,仅需要处理一个表面并且可以增加产量。 另外,可以减少加工余量(或研磨余量),并且材料的产率也增加。 \n\n 工业适用性 \n\n [0160] 本发明提供了一种粉末压实方法,其甚至可以由填充密度分布不​​均匀的粉末材料以高生产率制造具有均匀密度分布的压坯,并且还提供一种可以有效地用于搬运的粉末压实装置。 推出了这种粉末压实方法。 特别地,根据本发明的粉末压制方法,可以由流动性低的粉末材料以高生产率获得薄的压块。 \n\n [0161] 例如,仅通过使树脂层的常规单轴压制(即模压)的压制表面具有适当的硬度,就可以容易地获得本发明的粉末压制装置。 因此,可以容易地实施本发明。 \n\n [0162] 此外,本发明的粉末压制方法使得可以由通过带式铸造工艺制备的稀土合金粉末生产具有均匀密度的压块。 因此,本发明提供了以高生产率生产稀土烧结磁体的方法。');
INSERT INTO `os_patent_instruction_text` VALUES (12921, 22750, NULL, NULL);
INSERT INTO `os_patent_instruction_text` VALUES (12922, 22751, 'BACKGROUND OF THE INVENTION\n\n1. Field of the Invention\n\nThe present invention relates to a method for cutting a rare earth alloy, a method for manufacturing a rare earth magnet, and a wire-saw machine. More particularly, the present invention relates to a method for cutting a rare earth alloy using a sawing-wire with abrasive grains fixed to a core wire, and a method for manufacturing a rare earth magnet and a wire-saw machine adopting this cutting method.\n\n2. Description of Related Art\n\nRare earth alloys have been used as strong magnet materials, for example. Rare earth magnets, obtained by magnetizing rare earth alloys, are suitably used as magnets for voice coil motors used for positioning a magnetic head of a magnetic recording apparatus, for example.\n\nConventionally, for cutting ingots (including sintered bodies) of rare earth alloys, a technique of slicing an ingot with a rotary slicing blade, for example, has been adopted. This technique using a slicing blade, however, requires an undesirably large cutting margin because the cutting edge of the slicing blade is comparatively thick. This reduces the yield of the rare earth alloy materials and therefore raises the cost of rare earth alloy products (rare earth magnets, for example).\n\nA cutting method using a sawing wire is known as a method requiring a smaller cutting margin than the method using a slicing blade. For example, Japanese Laid-Open Patent Publication No. 11-198020 discloses that hard and brittle materials such as silicon, glass, neodymium, and ferrite can be cut using a sawing wire with abrasive super-fine grains fixed to the circumference of a high-strength core wire via a bond layer (hereinafter, this type of wire is called an “abrasive grain-fixed wire”).\n\nThe manufacture cost of rare earth magnets will be widely reduced if an ingot of a rare earth alloy can be cut using an abrasive grain-fixed wire as described above to produce a large number of plates having a predetermined thickness simultaneously with a reduced cutting margin. However, no report has ever been made on success of cutting of a rare earth alloy using an abrasive grain-fixed wire in a mass-production scale.\n\nThe present inventors have examined the above matter in various aspects and found that a main reason for the failure of cutting of a rare earth alloy using an abrasive grain-fixed wire in a mass-production scale is that the mechanical properties of a rare earth alloy, in particular, a rare earth alloy produced by a sintering method (hereinafter, referred to as a “rare earth sintered alloy”) are greatly different from those of silicon and the like. Specifically, a rare earth sintered alloy, which is rather brittle as a whole and has a main phase (i.e., R2Fe14B crystal grain) having a relatively high hardness and a grain boundary phase causing ductile fracture, is hard to be cut, unlike the hard and brittle material such as silicon. In other words, a rare earth sintered alloy exhibits high cutting resistance and as a result generates a large amount of heat, compared with the material such as silicon. In addition, the specific gravity of a rare earth alloy is about 7.5, which is large compared with that of silicon and the like, indicating that saw dust (sludge) generated by the cutting are settled and not easily discharged from a cut portion.\n\nIn view of the above, in order to cut a rare earth alloy efficiently with high machining precision, it is necessary to sufficiently reduce the cutting resistance and also efficiently release heat generated during the cutting, that is to say, efficiently cool a cut portion. It is also necessary to efficiently discharge saw dust generated by the cutting.\n\nThe cutting resistance can be reduced and heat generated during the cutting can be dissipated efficiently, by supplying a coolant (also called a “cutting fluid”) excellent in lubricity to a cut portion of a rare earth alloy. According to the results of experiments conducted by the present inventors, by wetting a sawing wire with a sufficient amount of an oil-base coolant, the coolant can be sufficiently delivered to a narrow cut portion by the traveling wire (see U.S. patent application Ser. No. 09/662,136, for example).\n\nHowever, use of an oil-base coolant has the following problems. It costs high to dispose of waste of the oil-base coolant to ensure not to cause environmental disruption. Also, it is difficult to separate saw dust (i.e., magnetic particles) from the waste and thus difficult to reuse the waste and the saw dust. In consideration of these, it appears suitable to use water (or a water-soluble liquid) as the coolant. However, since water is low in viscosity (1.0 mm2/s), a sufficient amount of water is not allowed to adhere to a traveling wire, and therefore it is not possible to deliver a sufficient amount of water to a cut portion even when the wire is wet with water.\n\nJapanese Laid-Open Patent Publication No. 11-198020 discloses that a coolant is allowed to adhere to an abrasive grain-fixed wire without fail even when the wire is traveling at high speed (for example, 2000 m/min) by making the wire travel in the coolant overflowing a coolant reservoir. However, according to experiments conducted by the present inventors, when a rare earth alloy is cut with a sawing wire that is traveling in overflowing water (as disclosed in Japanese Laid-Open Patent Publication No. 11-198020, for example), there arise problems that abrasive grains drop off and, in an extreme case, the wire snaps. These problems occurred even when the wire travel speed was as low as about 800 m/min, for example. This is probably because a sufficient amount of water was not delivered to a cut portion even by adopting the above method.\n\nFrom another examination by the present inventors, it has been found that when a coolant containing water as the main component is used, abrasive grains tend to drop off the wire due to contact friction between adjacent windings of the wire on a reel bobbin around which the wire is wound (this phenomenon is sometimes called shedding or detachment).\n\nThe reason is found as follows. The coolant containing water as the main component is low in adhesion to the wire so as to be easily shaken off and also easily evaporates, compared with an oil-base coolant. Therefore, only a small amount of coolant, or virtually no coolant, is kept adhering to the wire when the wire is wound around the reel bobbin. With lack of a sufficient amount of coolant, it is unable to reduce heat generation, as well as mechanical friction force, due to friction between adjacent wire windings. In other words, it is presumed that although the coolant is supplied to the wire at the cut portion, the coolant on the wire is flung off during the travel of the wire before the wire is wound around the reel bobbin.\n\nThe inter-wire friction mechanically damages abrasive grains, even though it does not cause shedding of abrasive grains, resulting in reducing cutting precision and cutting efficiency. In a worse case, the bond layer may be peeled off together with the abrasive grains fixed thereto. In other words, when a coolant containing water as the main component is used, the life of the wire is shortened due to the inter-wire friction on the reel bobbin. Since an abrasive grain-fixed wire is comparatively expensive, it is desirable to make the life of the wire longer for at least reduction of the cost for the cutting.\n\nIt has also been found that the wire snaps with high frequency when a coolant containing water as the main component is used, compared with the case of using an oil-base coolant. This also shortens the life of the wire.\n\nSUMMARY OF THE INVENTION\n\nAn object of the present invention is to provide a method for cutting a rare earth alloy with an abrasive grain-fixed wire, permitting use of a coolant containing water as the main component. Another object of the present invention is to make longer the life of a sawing wire of a wire-saw machine used for cutting a rare earth alloy using a coolant containing water as the main component. Yet another object of the present invention is to provide a wire-saw machine suitably usable for a cutting method as described above. Still another object of the present invention is to provide a method for manufacturing a rare earth magnet adopting the method for cutting a rare earth alloy described above, as well as a voice coil motor including a rare earth magnet manufactured by this method.\n\nThe method for cutting a rare earth alloy according to the first aspect of the present invention is a method for cutting a rare earth alloy using a wire with abrasive grains fixed to a core wire, including the step of cutting the rare earth alloy with the wire traveling in a state that a portion of the rare earth alloy to be cut with the wire is immersed in a coolant containing water as the main component, the coolant having a surface tension at 25° C. in a range of 25 mN/m to 60 mN/m.\n\nThe coolant preferably contains a water-soluble synthetic lubricant and water in a weight 10 times to 50 times as large as the weight of the synthetic lubricant.\n\nThe coolant may contain a surfactant and water in a weight 10 times to 50 times as large as the weight of the surfactant.\n\nThe coolant may contain an antifoaming agent.\n\nThe coolant preferably has a pH of 8 to 11, more preferably 9 or more.\n\nThe coolant may contain an anticorrosive.\n\nIn a preferred embodiment, the abrasive grains are fixed via a resin layer formed on the outer circumference of the core wire.\n\nIn another preferred embodiment, the average distance between the adjacent abrasive grains in a direction of travel of the wire is in a range of 150% to 600% of the average particle size of the abrasive grains, and the average height of portions of the abrasive grains protruding from the surface of the resin layer is in the range of 10 μm to 40 μm.\n\nThe average particle size D of the abrasive grains preferably satisfies the relationship 20 μm≦D≦60 μm.\n\nPreferably, in the step of cutting, the portion of the rare earth alloy to be cut with the wire is immersed in the coolant contained in a reservoir, and the coolant is supplied into the reservoir from the bottom of the reservoir and also from an opening of the reservoir, so that the coolant is kept overflowing from the opening.\n\nThe amount of overflow of the coolant per minute is preferably 50% or more of the volume of the reservoir.\n\nIn the step of cutting, the amount of the coolant supplied into the reservoir from the opening is preferably greater than the amount of the coolant supplied from the bottom.\n\nPreferably, in the step of cutting, curtain-like flows of a gas or the coolant are formed above the sides of the opening of the reservoir crossing the wire travel direction, so that the coolant is suppressed from overflowing from the opening of the reservoir.\n\nPreferably, the wire is driven by a roller, the roller includes a polymer layer having a guide groove formed therein, the guide groove has a pair of slopes at least one of which has an angle of 50 degrees or more with respect to the surface of the roller, and the wire travels along a space between the pair of slopes.\n\nThe rare earth alloy may be a R—Fe—B rare earth sintered alloy, and it may be a Nd—Fe—B rare earth sintered alloy.\n\nThe method for manufacturing a rare earth magnet according to the first aspect of the present invention includes the steps of: producing a rare earth magnet sintered body from rare earth alloy powder; and dividing the sintered body into a plurality of rare earth magnets by any of the methods for cutting a rare earth alloy according to the first aspect of the present invention described above.\n\nThe voice coil motor according to the first aspect of the present invention includes a rare earth magnet manufactured by the method for manufacturing a rare earth magnet according to the first aspect described above. The thickness of the rare earth magnet may be in a range of 0.5 mm to 3.0 mm.\n\nThe method for cutting a rare earth alloy according to the second aspect of the present invention is a method for cutting a rare earth alloy using a wire with abrasive grains fixed to a core wire, including the steps of: allowing the wire wound around a reel bobbin to travel between a plurality of rollers; supplying a first coolant containing water as the main component to portions of the wire wound around the reel bobbin or portions of the wire traveling near the reel bobbin; and cutting the rare earth alloy with the traveling wire while a second coolant containing water as the main component is supplied to a portion of the rare earth alloy to be cut with the wire.\n\nThe first coolant preferably has a coefficient of dynamic friction against the rare earth alloy at 25° C. of 0.3 or less.\n\nThe second coolant preferably has a coefficient of dynamic friction against the rare earth alloy at 25° C. in a range of 0.1 to 0.3.\n\nThe first coolant is preferably supplied to the wire by spraying.\n\nIn a preferred embodiment, the abrasive grains are fixed via a resin layer formed on the outer circumference of the core wire.\n\nThe resin is preferably a phenol resin, an epoxy resin, or a polyimide resin.\n\nIn a preferred embodiment, the average distance between the adjacent abrasive grains in a direction of travel of the wire is in a range of 150% to 600% of the average particle size of the abrasive grains, and the average height of portions of the abrasive grains protruding from the surface of the resin layer is in a range of 10 μm to 40 μm.\n\nThe first coolant may be higher in viscosity than the second coolant.\n\nThe first coolant and the second coolant preferably have a temperature in a range of 15° C. to 35° C.\n\nPreferably, each of the plurality of rollers includes a polymer layer having a guide groove formed therein, the guide groove has a pair of slopes at least one of which has an angle of 50 degrees or more with respect to the surface of the roller, and the wire travels along a space between the pair of slopes.\n\nThe rare earth alloy may be a R—Fe—B rare earth sintered alloy, and it may be a Nd—Fe—B rare earth sintered alloy.\n\nThe method for manufacturing a rare earth magnet according to the second aspect of the present invention includes the steps of: producing a rare earth magnet sintered body from rare earth alloy powder; and dividing the sintered body into a plurality of rare earth magnets by any of the methods for cutting a rare earth alloy according to the second aspect of the present invention described above.\n\nThe voice coil motor according to the second aspect of the present invention includes a rare earth magnet manufactured by the method for manufacturing a rare earth magnet according to the second aspect described above. The thickness of the rare earth magnet may be in a range of 0.5 mm to 3.0 mm.\n\nThe wire-saw machine according to the second aspect of the present invention includes: a wire with abrasive grains fixed to a core wire; a reel bobbin around which the wire is wound; a plurality of rollers for unwinding the wire wound around the reel bobbin to allow the wire to travel; a device for supplying a first coolant to a portion of a cut object to be cut with the wire; and a device for supplying a second coolant to portions of the wire wound around the reel bobbin or portions of the wire traveling near the reel bobbin.\n\nThe device for supplying the second coolant preferably includes a sprayer.\n\nPreferably, each of the plurality of rollers includes a polymer layer having a guide groove formed therein, the guide groove has a pair of slopes at least one of which has an angle of 50 degrees or more with respect to the surface of the roller, and the wire travels along a space between the pair of slopes.\n\nAnother wire-saw machine according to the present invention includes: a wire with abrasive grains fixed to a core wire; a reel bobbin around which the wire is wound; a plurality of rollers for unwinding the wire wound around the reel bobbin to allow the wire to travel; and a device for supplying a coolant to a portion of a cut object to be cut with the wire, wherein each of the plurality of rollers includes a polymer layer having a guide groove formed therein, the guide groove has a pair of slopes at least one of which has an angle of 50 degrees or more with respect to the surface of the roller, and the wire travels along a space between the pair of slopes.\n\nThe tension of the wire traveling between the plurality of rollers is preferably in a range between 25 N and 35 N.\n\nBRIEF DESCRIPTION OF THE DRAWINGS\n\nFIG. 1 is a diagrammatic view of a wire-saw machine 100 suitably used for implementing the method for cutting a rare earth alloy of an embodiment of the present invention.\n\nFIG. 2 is a diagrammatic view of a cutting section and its surrounds of the wire-saw machine 100 of FIG. 1.\n\nFIG. 3 is a diagrammatic cross-sectional view of a sawing wire 20 suitably used for implementing the method for cutting a rare earth alloy of the embodiment of the present invention.\n\nFIG. 4 is a diagrammatic view of a wire-saw machine 200 suitably used for implementing the method for cutting a rare earth alloy of another embodiment of the present invention.\n\nFIG. 5 is a diagrammatic view of a structure for supplying a coolant to a sawing wire 20 wound around a reel bobbin 40a, 40b of the wire-saw machine 200.\n\nFIG. 6 is a diagrammatic cross-sectional view of a roller suitably used for the wire-saw machines 100 and 200.\n\nFIG. 7 is a diagrammatic cross-sectional view of a conventional roller.\n\nDETAILED DESCRIPTION OF THE INVENTION\n\nHereinafter, the method for cutting a rare earth alloy and the method for manufacturing a rare earth magnet according to the first aspect of the present invention will be described.\n\nThe cutting method according to the first aspect is a method for cutting a rare earth alloy using a wire with abrasive grains (typically, diamond abrasive grains) fixed to a core wire (typically, a piano wire). The cutting method includes a process step of cutting a rare earth alloy with the wire traveling in the state that the portion of the rare earth alloy to be cut with the wire is immersed in a water-soluble coolant having a surface tension at 25° C. in the range of 25 mN/m to 60 mN/m. A coolant of which the coefficient of dynamic friction against a rare earth alloy at 25° C. is 0.1 to 0.3 may also be used.\n\nIn the method for cutting a rare earth alloy according to the first aspect of the present invention, in which cutting of a rare earth alloy with the abrasive grain-fixed wire is performed in the state that the cut portion of the rare earth alloy is immersed in a coolant having a surface tension in the range of about 25 mN/m to about 60 mN/m (about 25 dyn/cm to about 60 dyn/cm) at 25° C., efficient cooling of the wire is possible. This is presumably because the coolant having a surface tension falling within the above range is excellent in wettability (or conformability) for the rare earth alloy and/or the wire, compared with water, and therefore, the coolant infiltrates (i.e., penetrates) into the cut portion with good efficiency. The cut portion is the portion of the rare earth alloy coming into contact with the wire and cut with the wire. This portion is also called a cut groove. Also, naturally, the coolant containing water as the main component exhibits high cooling efficiency because it is high in specific heat compared with an oil-base coolant (for example, mineral oil). The “coolant containing water as the main component” as used herein refers to a coolant in which water occupies 70 wt. % or more of the entire liquid.\n\nA suitable coolant for use in the method for cutting a rare earth alloy of the present invention may also be determined by the coefficient of dynamic friction against the rare earth alloy. A coolant having a coefficient of dynamic friction at 25° C. in the range of about 0.1 to about 0.3 exhibits the function/effect equivalent to those exhibited by the coolant having a surface tension within the range specified above. The coefficient of dynamic friction is considered as an indicator of lubricity provided by the coolant for the cut portion, while the surface tension is considered as an indicator of infiltration of the coolant into the cut portion. It is known that there is a qualitative correlation between the surface tension and the coefficient of dynamic friction.\n\nThe surface tension of the coolant is measured with a known de Nouy tensiometer. The coefficient of dynamic friction of the coolant against a rare earth alloy is measured with a Masuda-type “four-ball friction tester” often used in Japan as a basic tester. Herein, in both cases (i.e., the surface tension and the coefficient of dynamic friction), measured values at 25° C. are adopted as values characterizing the coolant.\n\nNote that the coefficient of dynamic friction specified in the embodiments to follow is a value measured with a four-ball friction tester using iron balls. A R—Fe—B rare earth alloy (R is an element selected from the rare earth elements and Y; an example of the R—Fe—B rare earth alloy is an alloy containing Nd2Fe14B intermetallic compound as the main phase) used in the embodiments contains iron in the largest amount among the constituent elements. Therefore, the coefficient of dynamic friction of the coolant measured with the tester using iron balls can be a value very close to and thus adopted as the coefficient of dynamic friction of the coolant against the rare earth alloy. This close relationship was confirmed experimentally. The compositions and preparation methods of rare earth alloys suitably used for rare earth magnets are described in U.S. Pat. Nos. 4,770,723 and 4,792,368, for example. The contents of U.S. Pat. Nos. 4,770,723 and 4,792,368 are incorporated herein by reference. In the typical composition of R—Fe—B rare earth alloy, Nd or Pr is mainly used as R, Fe may be partially replaced by a transition element (e.g., Co), and B may be replaced by C.\n\nAlthough the coolant usable for the cutting method of the present invention was specified by the surface tension or the coefficient of dynamic friction measured at 25° C., the temperature of the coolant when actually used is not limited to 25° C. To obtain the effect of the present invention, however, it is preferable to use the coolant temperature-controlled to fall within the range of 15° C. to 35° C., more preferably within the range of 20° C. to 30° C., further more preferably within the range of 20° C. to 25° C. As is well known, the surface tension and coefficient of dynamic friction of a coolant depend on the temperature. Therefore, if the temperature of the coolant is excessively out of the above temperature range, the coolant will exhibit a state considerably resembling the state observed when the surface tension and dynamic friction of the coolant fall outside the respective ranges described above. This deteriorates cooling or cutting efficiency.\n\nBy using the coolant described above, abnormal temperature rise of the wire is suppressed, and this suppresses/prevents abnormal shedding of abrasive grains and snapping of the wire (i.e., wire breakage). As a result, degradation in machining precision is prevented, and also the life of the wire can be made longer than conventionally allowed. This enables reduction in manufacturing cost.\n\nThe coolant described above is prepared by adding a surfactant and a synthetic lubricant to water. The surface tension and the coefficient of dynamic friction can adjusted to predetermined values by appropriately selecting the types and added amounts of these additives. Since the coolant containing water as the main component is comparatively low in viscosity, saw dust of the rare earth alloy can be easily separated from sludge generated during the cutting, by use of a magnet, and thus the coolant can be reused. In addition, the problem of environmental disruption due to disposal of a coolant is prevented. Moreover, since the amount of carbon contained in the sludge is small, a magnet that will be produced using saw dust separated from the sludge as a raw material can exhibit improved magnetic properties.\n\nWhen the wire travels at high speed during the cutting, the coolant may foam in some cases, causing reduction in cooling efficiency. This reduction in cooling efficiency due to foaming of the coolant can be suppressed by using a coolant containing an antifoaming agent. Corrosion of the rare earth alloy can be suppressed by using a coolant having a pH in the range of 8 to 11. The pH of the coolant is more preferably 9 or more. Oxidation of the rare earth alloy can be suppressed by using a coolant containing an anticorrosive. These additives may be appropriately adjusted in consideration of the type of the rare earth alloy, the cutting conditions, and the like.\n\nAs the sawing wire, a wire with diamond abrasive grains fixed thereto with a resin is suitably used. More specifically, diamond abrasive grains are fixed to the outer circumference of a core wire (typically, a piano wire) with a resin. As the resin, phenol resins, epoxy resins, and polyimide resins are preferably used. These resins are high in adhesion strength to the outer circumference of a piano wire (hard steel wire), and also excellent in wettability (infiltration) for the coolant as will be described later. This type of wire is inexpensive compared with a wire produced by electrodeposition (electro-plating), and thus the cost required for the cutting of the rare earth alloy can be reduced. The core wire is not limited to a piano wire, but may be made of an alloy such as Ni—Cr and Fe—Ni, a metal having a high melting point, such as W and Mo, or a bundle of high-strength fibers such as nylon fibers. The material for the abrasive grains is not limited to diamond, but may be SiC, B, C, CBN (cubic boron nitride), or the like.\n\nTo ensure the advantage that the cutting margin is small, the outer diameter of the sawing wire is preferably 0.3 mm or less, more preferably 0.25 mm or less. The lower limit of the outer diameter of the wire is determined in consideration that a sufficient strength is secured, and to ensure that abrasive grains having a predetermined size are fixed to the core wire with sufficient strength, the diameter of the core wire is preferably about 0.12 mm to about 0.20 mm, more preferably about 0.15 mm to about 0.2 mm. The average particle size D of abrasive grains preferably satisfies 20 μm≦D≦60 μm, more preferably 30 μm≦D≦60 μm, particularly preferably 40 μm≦D≦60 μm, from the standpoint of cutting efficiency. From the standpoint of cutting efficiency and discharge efficiency of saw dust (sludge), the average distance between adjacent abrasive grains is preferably in the range of 150% to 600% of the average particle size D of abrasive grains, and the average height of the portions of the abrasive grains protruding from the surface of the resin layer is preferably in the range of 10 μm to 40 μm, more preferably in the range of 15 μm to 40 μm. The wire described above is available from general wire manufacturers (for example, Allied Material Corp.) by specifying the above conditions.\n\nBy using the wire described above, good cutting efficiency is attained and the discharge efficiency of saw dust (i.e., sludge) improves. This enables cutting at a comparatively high travel speed (for example, 1000 m/min). Moreover, since the wire is cooled efficiently with the coolant described above, the cutting of the rare earth alloy can be performed with high machining precision stably over a long period of time. By using the coolant containing water as the main component, the wire travel speed can be set higher by 20 to 30% (for example, at 1100 m/min to 1200 m/min) than that in the case of using an oil-base coolant, to optimize the cutting efficiency.\n\nThe coolant containing water as the main component used in the cutting method of the present invention is low in viscosity (kinematic viscosity: about 1 mm2/s), and therefore low in discharge efficiency of saw dust, compared with an oil-base coolant (kinematic viscosity: generally 5 mm2/s or more). To increase the discharge efficiency of saw dust, during the cutting process, the cut portion is preferably kept immersed in the coolant filled in a reservoir. Also, the coolant is preferably supplied from the top opening of the reservoir, in addition to being supplied from the bottom thereof, so that the coolant is kept overflowing from the opening of the reservoir.\n\nSaw dust discharged into the low-viscosity coolant easily settle down, hardly floating in the surface portion of the coolant near the opening of the reservoir. In order to cut the rare earth alloy while the cut portion thereof is kept immersed in the coolant, the wire is placed so that it travels in the surface portion of the coolant near the opening of the reservoir. Therefore, the amount of saw dust is small in the portion of the coolant in which the wire travels, and thus the coolant supplied to the cut portion contains only a small amount of saw dust. In particular, since the coolant is supplied from the top opening of the reservoir to keep the coolant overflowing from the opening, it is ensured that the amount of saw dust in the coolant supplied to the cut portion is small. In addition, saw dust attaching to the wire can be automatically washed away by the flow of the coolant supplied from the opening of the reservoir. The amount of the coolant overflowing for one minute is preferably 50% or more of the volume of the reservoir. The amount of the coolant supplied from the opening is preferably greater than the amount of the coolant supplied from the bottom of the reservoir.\n\nCurtain-like flows of the coolant (or gas flow) may be formed above the sides of the opening of the reservoir crossing the wire travel direction, so that the coolant is suppressed from overflowing from the opening of the reservoir and thus the liquid level of the overflowing coolant is raised beyond the wall of the reservoir. This results in a larger amount of coolant being supplied to the surroundings of the cut portion and thus enables further reduction of the amount of saw dust in the coolant. The delivery pressure of the coolant required to generate the flow of the coolant is preferably in the range of 0.2 MPa (2 kgf/cm2) to 1.0 MPa (10 kgf/cm2), more preferably in the range of 0.4 MPa (4 kgf/cm2) to 0.6 MPa (6 kgf/cm2). If the delivery pressure is lower than the above range, the effect may not be satisfactory, and if it exceeds the above range, the wire may bend resulting in degradation in machining precision.\n\nPreferably, the coolant is also supplied to a pair of main rollers placed on both sides of the reservoir for regulating the wire travel position, among main rollers provided for the travel of the wire. With this supply of the coolant to these main rollers, a polymer layer (for example, an organic polymer layer such as a polyurethane rubber layer) having grooves for guiding the wire, formed on the surface of each of the main rollers, is prevented from temperature rise. In addition, saw dust (or sludge) attaching to or staying on the wire or the guide grooves can be washed away. This prevents the wire travel position from deviating and the wire from slipping off the groove.\n\nThe coolant can be reused (used in a circulating system, for example) by collecting the dirty liquid composed of the coolant and sludge including saw dust of the rare earth alloy, generated during the cutting process, and separating the saw dust of the rare earth alloy from the sludge with a magnet. Since the coolant containing water as the main component is low in viscosity as described above, the saw dust can be easily separated. By separating the saw dust of the rare earth alloy, also, the waste coolant can be easily disposed of without entailing damage to the environment. Moreover, since the amount of carbon, which is not easily separated from a R—Fe—B alloy (R is selected from the rare earth elements and Y), is small as described above, the saw dust can be remelted and recycled as a raw material for the rare earth alloy. That is, since the coolant contains water as the main component, it is easy to reduce the carbon content of a rare earth alloy that will be produced by recycling the saw dust. Thus, a raw material usable as a material for rare earth magnets can be obtained. For separation of saw dust from sludge, the method disclosed in U.S. patent application Ser. No. 09/662,136 by the applicant of the present invention, for example, may be used.\n\nThe cutting method', '背景技术\n\n1.发明领域\n\n稀土合金的切割方法，稀土类磁铁的制造方法以及线锯机技术领域本发明涉及稀土合金的切断方法，稀土类磁铁的制造方法以及线锯机。更具体地，本发明涉及一种使用锯线切割稀土合金的方法，该锯线具有固定到芯线的磨粒，以及制造稀土磁体的方法和采用该切割方法的线锯机。\n\n2.相关技术描述\n\n例如，稀土合金已被用作强磁体材料。通过磁化稀土合金获得的稀土磁体适合用作例如用于定位磁记录装置的磁头的音圈电动机的磁体。\n\n传统上，为了切割稀土合金的铸锭（包括烧结体），已经采用了例如用旋转切片刀片切割铸锭的技术。然而，使用切片刀片的这种技术需要不希望的大切割余量，因为切片刀片的切割边缘相对较厚。这降低了稀土合金材料的产量，因此提高了稀土合金产品（例如稀土磁体）的成本。\n\n使用锯线的切割方法已知为需要比使用切片刀片的方法更小的切割余量的方法。例如，日本公开专利公报No.11-198020公开了可以使用锯线切割诸如硅，玻璃，钕和铁氧体的硬脆材料，其中磨料超细晶粒固定在高的圆周上。 - 通过粘合层的强度芯线（下文中，这种类型的线称为“磨粒固定线”）。\n\n如果可以使用如上所述的磨粒固定线切割稀土合金的铸锭以产生大量具有预定厚度的板同时具有减小的切削余量，则稀土磁体的制造成本将大大降低。但是，迄今为止还没有关于使用大规模生产规模的磨粒固定线切割稀土合金的成功的报道。\n\n本发明人已经在各个方面研究了上述问题，并发现在批量生产规模中使用磨粒固定线切割稀土合金失败的主要原因是稀土合金的机械性能。特别是，通过烧结法制造的稀土合金（以下称为“稀土烧结合金”）与硅等大大不同。具体而言，稀土烧结合金整体上相当脆，并且具有相对高硬度和引起韧性断裂的晶界相的主相（即，R2Fe14B晶粒）难以切割，与硬质不同和脆性材料，如硅。换句话说，与诸如硅的材料相比，稀土烧结合金表现出高切削阻力并因此产生大量的热量。另外，稀土合金的比重约为7.5，与硅等相比较大，表明切割产生的锯屑（污泥）沉降，不易从切割部分排出。\n\n鉴于上述情况，为了以高加工精度有效地切割稀土合金，必须充分降低切削阻力并且还有效地释放切削期间产生的热量，也就是说，有效地冷却切削部分。还必须有效地排出由切割产生的锯屑。\n\n通过向稀土合金的切割部分供应润滑性优异的冷却剂（也称为“切削液”），可以降低切削阻力并且可以有效地消散切削过程中产生的热量。根据本发明人进行的实验结果，通过用足够量的油基冷却剂润湿锯线，冷却剂可以通过行进线充分地输送到狭窄的切割部分（参见美国专利申请系列No.例如，第09 / 662,136号）。\n\n然而，使用油基冷却剂具有以下问题。处理废油基冷却剂的成本很高，以确保不会造成环境破坏。而且，难以将锯屑（即，磁性颗粒）与废物分离，因此难以再利用废物和锯屑。考虑到这些，似乎适合使用水（或水溶性液体）作为冷却剂。然而，由于水的粘度低（1.0mm2 / s），所以不允许足够量的水粘附到移动的导线上，因此即使当水不能将足够量的水输送到切割部分时也是如此。电线被水弄湿了。\n\n日本公开专利公报No.11-198020公开了即使当电线通过制造电线高速行进（例如，2000m / min）时也允许冷却剂粘附到磨粒固定线上。在冷却剂溢出的冷却剂中移动。然而，根据本发明人进行的实验，当用在溢流水中行进的锯线切割稀土合金时（例如，如日本公开专利公报No.11-198020中所公开的），出现了磨料颗粒脱落的问题，在极端情况下，导线会卡住。例如，即使当线移动速度低至约800米/分钟时，也会出现这些问题。这可能是因为即使采用上述方法也没有足够量的水输送到切割部分。\n\n从本发明人的另一个检查中发现，当使用含有水作为主要成分的冷却剂时，由于在卷轴筒管上的相邻线圈之间的接触摩擦，磨粒倾向于从线上掉落。导线缠绕（这种现象有时称为脱落或脱落）。\n\n原因如下。与油基冷却剂相比，含有水作为主要成分的冷却剂与金属丝的附着力低，从而容易被抖落并且容易蒸发。因此，当线缠绕在线轴上时，仅有少量冷却剂或几乎没有冷却剂粘附在线上。由于缺少足够量的冷却剂，由于相邻线绕组之间的摩擦，它不能减少热量产生以及机械摩擦力。换句话说，假设尽管冷却剂在切割部分处被供应到线材，但是在线材缠绕在卷线筒管上之前，线材上的冷却剂在线材行进期间被甩掉。\n\n线间摩擦机械地损坏磨粒，即使它不会导致磨粒脱落，导致切削精度和切削效率降低。在更坏的情况下，粘合层可以与固定在其上的磨粒一起剥离。换句话说，当使用含有水作为主要成分的冷却剂时，由于卷轴筒管上的线间摩擦，导线的寿命缩短。由于磨粒固定线比较昂贵，因此希望使线的寿命更长，以至少降低切割成本。\n\n还发现，与使用油基冷却剂的情况相比，当使用含有水作为主要成分的冷却剂时，线材以高频率卡扣。这也缩短了电线的寿命。\n\n发明内容\n\n本发明的目的是提供一种用磨粒固定线切割稀土合金的方法，允许使用含有水的冷却剂作为主要成分。本发明的另一个目的是延长使用含有水的冷却剂作为主要成分的用于切割稀土合金的线锯机的锯线的寿命。本发明的又一个目的是提供一种适用于如上所述的切割方法的线锯机。本发明的又一个目的是提供一种采用上述稀土合金切割方法制造稀土磁体的方法，以及包括通过该方法制造的稀土磁体的音圈电机。\n\n根据本发明第一方面的稀土合金的切割方法是使用固定在芯线上的磨粒的线切割稀土合金的方法，包括用线切割稀土合金的步骤在用导线切割的一部分稀土合金浸入含有水作为主要成分的冷却剂中的状态下行进，冷却剂在25℃下的表面张力为25mN / m至60 mN / m。\n\n冷却剂优选含有水溶性合成润滑剂和水，其重量是合成润滑剂重量的10倍至50倍。\n\n冷却剂可含有表面活性剂和水，其重量是表面活性剂重量的10倍至50倍。\n\n冷却剂可含有消泡剂。\n\n冷却剂的pH优选为8至11，更优选为9或更高。\n\n冷却剂可含有防腐蚀剂。\n\n在优选实施例中，磨粒通过形成在芯线外周上的树脂层固定。\n\n在另一个优选的实施方案中，相邻磨料颗粒在金属丝行进方向上的平均距离为磨粒平均粒度的150％至600％，以及磨料部分的平均高度从树脂层的表面突出的颗粒在10μm至40μm的范围内。\n\n磨粒的平均粒径D优选满足20μm≤D≤60μm的关系。\n\n优选地，在切割步骤中，将待切割的稀土合金部分浸入容纳在容器中的冷却剂中，并且冷却剂从容器的底部并且还从开口供应到容器中。储液器的一部分，使冷却剂保持从开口溢出。\n\n每分钟冷却剂的溢流量优选为储液器容积的50％或更多。\n\n在切割步骤中，从开口供应到储存器中的冷却剂的量优选地大于从底部供应的冷却剂的量。\n\n优选地，在切割步骤中，气体或冷却剂的帘状流动形成在与导线行进方向交叉的储存器的开口的侧面上方，从而抑制冷却剂从储存器的开口溢出。\n\n优选地，所述线材由辊子驱动，所述辊子包括聚合物层，所述聚合物层具有形成在其中的引导槽，所述引导槽具有一对斜面，所述斜面中的至少一个相对于所述表面具有50度或更大的角度。滚轮，导线沿着这对斜面之间的空间行进。\n\n稀土合金可以是R-Fe-B稀土烧结合金，也可以是Nd-Fe-B稀土烧结合金。\n\n根据本发明第一方面的稀土磁体的制造方法包括以下步骤：由稀土合金粉末制造稀土磁体烧结体;并且，通过上述根据本发明第一方面的切削稀土合金的任何方法将烧结体分成多个稀土磁体。\n\n根据本发明第一方面的音圈电机包括通过根据上述第一方面的稀土磁体的制造方法制造的稀土磁体。稀土磁体的厚度可以在0.5mm至3.0mm的范围内。\n\n根据本发明的第二方面的用于切割稀土合金的方法是使用具有固定到芯线的磨粒的线切割稀土合金的方法，包括以下步骤：允许缠绕在卷轴上的线梭芯在多个辊子之间行进;将包含水作为主要成分的第一冷却剂供应到缠绕在卷轴筒管上的线材部分或者在卷筒筒管附近行进的部分线材;用行进线切割稀土合金，同时将含有水作为主要成分的第二冷却剂供给到待切割的稀土合金的一部分中。\n\n第一冷却剂优选在25℃下对稀土合金的动摩擦系数为0.3或更小。\n\n第二冷却剂优选在25℃下具有相对于稀土合金的动摩擦系数，其在0.1至0.3的范围内。\n\n优选通过喷涂将第一冷却剂供应到线材。\n\n在优选实施例中，磨粒通过形成在芯线外周上的树脂层固定。\n\n树脂优选为酚醛树脂，环氧树脂或聚酰亚胺树脂。\n\n在一个优选的实施方案中，相邻磨料颗粒在金属丝的行进方向上的平均距离在磨料颗粒的平均颗粒尺寸的150％至600％的范围内，并且磨料的部分的平均高度从树脂层的表面突出的颗粒在10μm至40μm的范围内。\n\n第一冷却剂的粘度可以高于第二冷却剂。\n\n第一冷却剂和第二冷却剂优选具有15℃至35℃的温度。\n\n优选地，所述多个辊中的每一个包括聚合物层，所述聚合物层具有形成在其中的引导槽，所述引导槽具有一对斜面，所述斜面中的至少一个相对于所述辊的表面具有50度或更大的角度，并且电线沿着这对斜坡之间的空间行进。\n\n稀土合金可以是R-Fe-B稀土烧结合金，也可以是Nd-Fe-B稀土烧结合金。\n\n根据本发明第二方面的稀土磁体的制造方法包括以下步骤：由稀土合金粉末制造稀土磁体烧结体;并且，通过上述根据本发明第二方面的切削稀土合金的任何方法将烧结体分成多个稀土磁体。\n\n根据本发明第二方面的音圈电机包括通过根据上述第二方面的稀土磁体的制造方法制造的稀土磁体。稀土磁体的厚度可以在0.5mm至3.0mm的范围内。\n\n根据本发明第二方面的线锯机包括：具有固定到芯线的磨粒的线;卷线筒绕线绕线筒;多个辊子，用于展开缠绕在卷轴筒管上的线材，以允许线材行进;用于将第一冷却剂供给到待切割物体的一部分的装置;以及用于将第二冷却剂供应到缠绕在卷轴筒管上的线材部分或者在卷筒筒管附近行进的部分线材的装置。\n\n用于供应第二冷却剂的装置优选地包括喷雾器。\n\n优选地，所述多个辊中的每一个包括聚合物层，所述聚合物层具有形成在其中的引导槽，所述引导槽具有一对斜面，所述斜面中的至少一个相对于所述辊的表面具有50度或更大的角度，并且电线沿着这对斜坡之间的空间行进。\n\n根据本发明的另一种线锯机包括：具有固定到芯线的磨粒的线;卷线筒绕线绕线筒;多个辊子，用于展开缠绕在卷轴筒管上的线材，以允许线材行进;用于向所述待切割物体的一部分供应冷却剂的装置，其中所述多个辊子中的每一个包括其中形成有引导槽的聚合物层，所述引导槽具有至少一个斜面其中，相对于辊的表面具有50度或更大的角度，并且线沿着这对斜面之间的空间行进。\n\n在多个辊之间行进的线的张力优选地在25N和35N之间的范围内。\n\n附图的简要说明\n\n图。图1是适用于实施本发明实施方案的稀土合金切割方法的线锯机100的示意图。\n\n图。图2是图1的线锯机100的切割部分及其周围的示意图。 1。\n\n图。图3是适用于实施本发明实施方案的稀土合金切割方法的锯线20的示意性横截面图。\n\n图。图4是适用于实施本发明另一实施例的稀土合金切削方法的线锯机200的示意图。\n\n图。图5是用于将冷却剂供应到缠绕在线锯机200的卷轴线轴40a，40b上的锯线20的结构的示意图。\n\n图。图6是适用于线锯机100和200的辊的示意性剖视图。\n\n图。图7是传统辊的示意性剖视图。\n\n具体实施方式\n\n在下文中，将描述根据本发明第一方面的稀土合金的切割方法和稀土磁体的制造方法。\n\n根据第一方面的切割方法是使用具有固定到芯线（通常是钢琴线）的磨粒（通常为金刚石磨粒）的线切割稀土合金的方法。切割方法包括切割稀土合金的工艺步骤，其中导线在待用导线切割的稀土合金部分浸入表面张力为25℃的水溶性冷却剂的状态下行进。在25 mN / m至60 mN / m的范围内。也可以使用在25℃下对稀土合金的动摩擦系数为0.1至0.3的冷却剂。\n\n在根据本发明第一方面的稀土合金的切割方法中，在浸渍稀土合金的切割部分的状态下进行用磨粒固定线切割稀土合金在25℃下具有约25mN / m至约60mN / m（约25dyn / cm至约60dyn / cm）的表面张力的冷却剂中，可以有效地冷却电线。这可能是因为表面张力落在上述范围内的冷却剂与水相比，稀土合金和/或金属丝的润湿性（或顺应性）优异，因此，冷却剂渗透（即渗透）到切割部分效率高。切割部分是稀土合金与金属丝接触并用金属丝切割的部分。该部分也称为切槽。而且，当然，含有水作为主要成分的冷却剂表现出高的冷却效率，因为与油基冷却剂（例如，矿物油）相比，其具有高的比热。这里使用的“含有水作为主要成分的冷却剂”是指其中水占70重量％的冷却剂。整个液体的％或更多。\n\n用于切割本发明的稀土合金的方法的合适的冷却剂也可以通过对稀土合金的动摩擦系数来确定。在25℃下具有约0.1至约0.3范围内的动摩擦系数的冷却剂表现出与表面张力在上述范围内的冷却剂所表现出的功能/效果相当的功能/效果。动摩擦系数被认为是由切割部分的冷却剂提供的润滑性的指标，而表面张力被认为是冷却剂渗入切割部分的指示。已知在表面张力和动摩擦系数之间存在定性相关性。\n\n用已知的de Nouy张力计测量冷却剂的表面张力。冷却剂对稀土合金的动摩擦系数用日本常用的Masuda型“四球摩擦试验机”作为基本试验机测量。这里，在两种情况下（即，表面张力和动摩擦系数），采用25℃下的测量值作为表征冷却剂的值。\n\n注意，在下面的实施例中规定的动摩擦系数是使用铁球的四球摩擦测试仪测量的值。在实施例中使用的AR-Fe-B稀土合金（R是选自稀土元素和Y的元素; R-Fe-B稀土合金的一个例子是含有Nd2Fe14B金属间化合物作为主相的合金）含有构成元素中含量最多的铁。因此，使用铁球测试仪测量的冷却剂的动摩擦系数可以是非常接近的值，因此被用作冷却剂对稀土合金的动摩擦系数。通过实验证实了这种密切的关系。适用于稀土磁体的稀土合金的组合物和制备方法描述于美国专利No.4,522,587中。例如，美国专利号4,770,723和4,792,368。美国专利的内容美国专利4,770,723和4,792,368在此引入作为参考。在R-Fe-B稀土合金的典型组成中，Nd或Pr主要用作R，Fe可以部分地被过渡元素（例如Co）取代，B可以被C代替。\n\n尽管可用于本发明的切割方法的冷却剂由在25℃下测量的表面张力或动摩擦系数确定，但实际使用时冷却剂的温度不限于25℃。然而，在本发明的效果中，优选使用温度控制的冷却剂在15℃至35℃的范围内，更优选在20℃至30℃的范围内，进一步更优选地，在20℃至25℃的范围内。众所周知，冷却剂的表面张力和动摩擦系数取决于温度。因此，如果冷却剂的温度过度超出上述温度范围，则冷却剂将呈现与当冷却剂的表面张力和动摩擦落在上述各个范围之外时观察到的状态非常相似的状态。这会降低冷却或切割效率。\n\n通过使用上述冷却剂，抑制了线的异常温度升高，并且这抑制/防止了磨粒的异常脱落和线的卡扣（即，断线）。结果，防止了加工精度的降低，并且还可以使线的寿命比常规允许的更长。这使得能够降低制造成本。\n\n通过向水中添加表面活性剂和合成润滑剂来制备上述冷却剂。通过适当地选择这些添加剂的类型和添加量，可以将表面张力和动摩擦系数调节到预定值。由于含有水作为主要成分的冷却剂的粘度相对较低，因此稀土合金的锯屑可以通过使用磁铁容易地与切割过程中产生的污泥分离，因此可以重复使用冷却剂。另外，防止了由于处理冷却剂而导致的环境破坏问题。此外，由于污泥中含有的碳量少，因此使用从作为原料的污泥中分离出的锯屑生产的磁铁可以表现出改善的磁特性。\n\n当在切割期间线材以高速行进时，冷却剂可能在某些情况下发泡，导致冷却效率降低。通过使用含有消泡剂的冷却剂，可以抑制由于冷却剂的起泡导致的冷却效率的降低。通过使用pH值在8至11范围内的冷却剂，可以抑制稀土合金的腐蚀。冷却剂的pH更优选为9或更高。通过使用含有防腐蚀剂的冷却剂，可以抑制稀土合金的氧化。考虑到稀土合金的类型，切削条件等，可以适当地调节这些添加剂。\n\n作为锯线，适合使用具有用树脂固定在其上的金刚石磨粒的线材。更具体地，金刚石磨粒用树脂固定到芯线（通常是钢琴线）的外周。作为树脂，优选使用酚醛树脂，环氧树脂和聚酰亚胺树脂。这些树脂对钢琴丝（硬钢丝）的外周具有高粘合强度，并且对于冷却剂的润湿性（渗透性）也是优异的，这将在后面描述。与通过电沉积（电镀）制造的线材相比，这种类型的线材便宜，因此可以降低切割稀土合金所需的成本。芯线不限于钢琴线，而是可以由诸如Ni-Cr和Fe-Ni的合金，具有高熔点的金属（诸如W和Mo）或一束高强度纤维制成。如尼龙纤维。用于磨粒的材料不限于金刚石，而可以是SiC，B，C，CBN（立方氮化硼）等。\n\n为了确保切割余量小的优点，锯线的外径优选为0.3mm或更小，更优选为0.25mm或更小。考虑到确保足够的强度来确定线材外径的下限，并且为了确保具有预定尺寸的磨粒以足够的强度固定到芯线上，芯线的直径优选为约0.12mm至约0.20mm，更优选约0.15mm至约0.2mm。从切削效率的观点来看，磨粒的平均粒径D优选满足20μm≤D≤60μm，更优选30μm≤D≤60μm，特别优选40μm≤D≤60μm。从锯屑（污泥）的切割效率和排出效率的观点来看，相邻磨粒之间的平均距离优选地在磨粒的平均粒径D的150％至600％的范围内，并且平均高度为从树脂层表面突出的磨粒的部分优选在10μm至40μm的范围内，更优选在15μm至40μm的范围内。通过指定上述条件，可以从通用电线制造商（例如，Allied Material Corp.）获得上述电线。\n\n通过使用上述金属丝，可以获得良好的切割效率，并且锯屑（即污泥）的排出效率提高。这使得能够以相对高的行进速度（例如，1000米/分钟）进行切割。此外，由于利用上述冷却剂有效地冷却线材，因此可以长时间稳定地以高加工精度进行稀土合金的切割。通过使用含有水的冷却剂作为主要成分，可以将导线行进速度设定为比使用油基的情况高20％至30％（例如，1100m / min至1200m / min）。冷却液，以优化切割效率。\n\n在本发明的切割方法中使用的含有水作为主要成分的冷却剂的粘度低（运动粘度：约1mm 2 / s），因此与油基冷却剂相比，锯屑的排出效率低（运动粘度：通常为5mm 2 / s或更高）。为了提高锯屑的排出效率，在切割过程中，切割部分优选地保持浸没在填充在贮存器中的冷却剂中。而且，冷却剂优选地从储存器的顶部开口供应，除了从其底部供应之外，使得冷却剂保持从储存器的开口溢出。\n\n排出到低粘度冷却剂中的锯屑容易沉降，几乎不会漂浮在储液器开口附近的冷却剂的表面部分中。为了切割稀土合金，同时将其切割部分保持浸入冷却剂中，放置金属丝使其在储存器开口附近的冷却剂的表面部分中行进。因此，在电线行进的冷却剂部分中锯屑的量很小，因此供给切割部分的冷却剂仅含有少量的锯屑。特别地，由于冷却剂从贮存器的顶部开口供应以保持冷却剂从开口溢出，因此确保供应到切割部分的冷却剂中的锯屑量小。另外，附着在电线上的锯屑可以通过从贮存器的开口供应的冷却剂的流动自动冲洗掉。溢出一分钟的冷却剂的量优选为储存器体积的50％或更多。从开口供应的冷却剂的量优选地大于从储存器的底部供应的冷却剂的量。\n\n冷却剂（或气流）的帘状流可以形成在与导线行进方向交叉的储存器的开口的侧面上方，从而抑制冷却剂从储存器的开口溢出并因此抑制冷却剂从液体的开口溢出。溢出的冷却剂升高到储液器的壁之外。这导致更大量的冷却剂被供应到切割部分的周围，因此能够进一步减少冷却剂中的锯屑量。产生冷却剂流动所需的冷却剂的输送压力优选在0.2MPa（2kgf / cm2）至1.0MPa（10kgf / cm2）的范围内，更优选在0.4MPa（4kgf / g）的范围内。 cm2）至0.6MPa（6kgf / cm2）。如果输送压力低于上述范围，则效果可能不令人满意，并且如果超过上述范围，则线材可能弯曲，导致加工精度降低。\n\n优选地，冷却剂还被供应到放置在储存器两侧的一对主辊，用于调节金属丝行进的主辊中的金属丝行进位置。通过向这些主辊供应冷却剂，防止形成在每个主辊的表面上的具有用于引导线的凹槽的聚合物层（例如，诸如聚氨酯橡胶层的有机聚合物层）温度上升。另外，可以冲洗附着或停留在电线或引导槽上的锯屑（或污泥）。这可以防止电线行程位置偏离并且电线从槽中滑落。\n\n冷却剂可以通过收集由冷却剂和污泥组成的脏液体（例如在循环系统中使用），包括在切割过程中产生的稀土合金的锯屑，以及分离稀土的锯屑。来自污泥的合金用磁铁。如上所述，由于含有水作为主要成分的冷却剂粘度低，因此可以容易地分离锯屑。通过分离稀土合金的锯屑，废冷却剂也可以容易地处理而不会对环境造成损害。此外，由于如上所述，不容易从R-Fe-B合金（R选自稀土元素和Y）中分离出的碳量很小，因此锯屑可以重新熔化并再循环使用。稀土合金的原料。也就是说，由于冷却剂含有水作为主要成分，因此容易降低通过回收锯屑而产生的稀土合金的碳含量。因此，可以获得可用作稀土磁体材料的原料。为了从污泥中分离锯屑，在美国专利申例如，可以使用本发明的申请人的美国专利申请09 / 662,136。\n\n本发明的切削方法适用于切削难切削的稀土烧结合金，特别是切削R-Fe-B稀土烧结合金。通过本发明的切割方法切割稀土合金的切割片经过表面处理和磁化以提供稀土磁体。可以在切割过程之前或之后执行磁化过程。由R-Fe-B稀土烧结合金制成的稀土磁体适合用作用于定位磁头的音圈电动机的材料。特别地，本发明的切割方法适用于切割美国专利No.4,522,588中公开的R-Fe-B稀土烧结磁体（合金）。与本申请的受让人签订的美国专利4,770,723和4,792,368。其中，本发明的切削方法适用于切削和制造主要由钕（Nd），铁（Fe）和硼（B）作为主要成分的稀土烧结磁体（合金），并具有由具有四方结构和粘性富Nd晶界相的Nd2Fe14B金属间化合物形成的硬质相（主相）（下文中，该磁体称为“钕磁体（合金）”）。钕磁铁的典型例子是住友特种金属株式会社制造的NEOMAX（商品名）。\n\n通过采用根据本发明第一方面的切割方法，可以高精度地有效地切割稀土合金。因此，例如，用于定位磁头的音圈电动机的小稀土磁体（例如，厚度：0.5mm至3.0mm）可以高精度地有效地制造。\n\n接下来，将描述根据本发明第二方面的稀土合金的切割方法和稀土磁体的制造方法。\n\n根据本发明第二方面的稀土合金的切割使用锯线（磨粒固定线），其具有固定到芯线（通常是钢琴线）的磨粒（通常是金刚石磨粒）。 。缠绕在卷轴筒管上的线材在多个辊子之间行进，稀土合金（工件）下降到并压靠在行进的线材上以切割成片。在切割期间，将具有水作为主要成分的冷却剂（第二冷却剂）供应到要用线切割的稀土合金部分。而且，以水为主要成分的冷却剂（第一冷却剂）被供应到缠绕在卷轴筒管上的线材部分和在卷筒筒管附近行进的线材部分。\n\n在根据本发明第二方面的实施例中，当冷却剂卷绕在卷轴筒管上时，冷却剂也被供应到线材。由于卷轴筒管上的相邻线圈之间的摩擦，这减少了热量产生以及机械摩擦力。结果，由于减少了对线材的机械损伤，因此抑制了切割精度和切割效率的降低，并且使线材的寿命更长。供应到切割部分的冷却剂（第二冷却剂）和该冷却剂的供应方式优选地与根据本发明第一方面的实施例中采用的相同。\n\n第一冷却剂优选在25℃下对稀土合金的动摩擦系数为0.3或更小，更优选0.15或更小。第二冷却剂优选在25℃下具有相对于稀土合金的动摩擦系数，其在0.1至0.3的范围内。\n\n尽管可用于本发明的切割方法的第一和第二冷却剂由在25℃下测量的动摩擦系数确定，但实际使用时冷却剂的温度不限于25℃。为了获得该效果然而，在本发明的范围内，优选使用温度控制的冷却剂在15℃至35℃的范围内，更优选在20℃至30℃的范围内，进一步更优选在20℃至25℃的范围内。\n\n通过使用具有上述动摩擦系数的冷却剂，有效地防止了线的异常温度升高，从而有效地抑制/防止了磨粒的异常脱落和线的卡扣。结果，防止了加工精度的降低，并且还可以使线的寿命比常规允许的更长。这使得能够降低制造成本。\n\n上述效果适用于供给到缠绕在一对卷轴筒管上的线材部分的第一冷却剂和在卷筒筒管附近行进的部分和供应到切割部分的第二冷却剂。因此，可以使用普通的冷却剂作为第一和第二冷却剂。或者，第一冷却剂可具有高于第二冷却剂的粘度，使得第一冷却剂容易地粘附到缠绕在卷轴筒管周围或在卷筒筒管附近行进的线材部分。作为第一和第二冷却剂，可以使用粘度范围为1mPa.s至50mPa.s（运动粘度：1mm 2 / s至50mm 2 / s）的冷却剂。为了增强第一冷却剂与线的粘附性，优选使用粘度为5mPa·s或更高（运动粘度：5mm 2 / s或更高）的冷却剂。冷却剂的粘度可通过控制与上述水混合的润滑剂的浓度来调节。\n\n第一冷却剂不一定通过整个切割过程供应，而是可以间歇地供应，只要缠绕在卷轴筒管上的线的部分可以保持用足够量的冷却剂润湿即可。注意，含有水作为主要成分的冷却剂（特别是含有链烷醇胺等的冷却剂）比油基冷却剂对树脂的不利影响更大。因此，当使用经由树脂层固定有磨粒的线材时，冷却剂的量优选尽可能小。考虑到这一点，冷却剂优选地被供应到缠绕在卷轴筒管上的线材的部分或者通过喷射或滴落在卷筒筒管附近行进。喷涂是特别优选的，因为这允许仅将少量冷却剂供应到缠绕在卷轴筒管周围的线材部分。冷却剂的供应量可以根据线的类型，长度，行进速度等适当地确定。例如，它可以在50ml / min至500ml / min的范围内。但是要注意，如果使用对水基冷却剂具有优异耐受性的锯线，例如电沉积线（例如，通过Ni镀层固定有磨粒的线），则可以浸入整个卷筒筒管。在冷却液中。\n\n在根据本发明第一和第二方面的实施例中，在每个辊子的聚合物层中形成的每个导向槽可以具有一对斜面，其中至少一个斜面具有等于或等于的角度。相对于辊子的表面超过50度，辊子的表面是与辊子的轴线平行的平面。通过采用这种结构，可以抑制沿着一对斜面之间的空间行进的线材在使用含有水作为主要成分的冷却剂时易于发生的卡合。当然，这对斜面中的两个优选地相对于辊的表面具有等于或大于50度的角度。在辊之间行进的线的张力优选地在25N和35N之间的范围内。\n\n（实施例1）\n\n在下文中，将参考相关附图更详细地描述用于切割本发明的稀土合金的方法的实施方案。在本实施例中，将描述用于切割用于制造上述钕磁体的钕磁体烧结体的方法。\n\n首先，将简要描述制造钕（Nd-Fe-B）烧结磁体的方法。作为磁体材料的稀土合金可以通过美国专利No.4,522,587中详细公开的任何方法生产。例如，上述的美国专利号4,770,723和4,792,368。\n\n材料金属以预定的摩尔分数比例精确地缩放，然后在真空或氩气气氛中通过高频感应熔化方法在坩埚中熔化。将熔融材料金属浇铸到水冷模具中，从而以预定比率制备原料合金。然后将原料合金粉碎以制备平均粒度为约3μm至约4μm的细粉。随后，将细粉末放入模具组件中并在磁场中进行压制压制。如果需要，在将细粉末与润滑剂混合之后进行该压制成型。将所得到的压块在约1000℃至约1200℃下进行烧结，以形成钕磁体烧结体。之后，在约600℃下进行时效处理，以增加磁体的矫顽力。可以以这种方式制备稀土烧结体。烧结体的尺寸例如为30mm×50mm×50mm。\n\n对得到的烧结体进行切割加工，形成多个薄板（这些板有时称为“基板”和“晶片”）。通过研磨精制所得烧结体薄板以调节尺寸和形状，然后进行表面处理以改善长期可靠性。然后进行磁化，并且在通过测试过程之后，完成钕永磁体。可以在切割过程之前执行磁化。\n\n在下文中，将参考图1和图2描述本发明的切割方法。 1至3。\n\n图。图1示意性地示出了适用于实施本发明实施方案的稀土合金切割方法的线锯机100的结构。\n\n线锯机100具有三个主辊10a，10b和10c以及一对卷轴筒40a和40b。放置在包含冷却剂的贮存器30下方的主辊10a用作驱动辊，并且放置在贮存器30两侧的主辊10b和10c用作从动辊。锯线20从一个卷轴绕线管40a放出并绕另一个绕线管40b缠绕，反之亦然，沿交替方向行进（所谓的双（梭）驱动方法）。通过将导线缠绕在卷轴筒40a上的时间设定得比卷绕在卷筒上的时间长，可以在导线20的交替行进期间向卷筒筒40a供应新的导线20部分。梭芯40b。例如，电线20的行进速度在600米/分钟至1500米/分钟的范围内，而供应新部分电线的速率在1米/分钟至5米/分钟的范围内。例如，分钟。\n\n线20布置成150行，例如，在主辊10a，10b和10c之间。为了限定线20的线的行进位置，在聚合物层（例如，诸如聚氨酯橡胶层的有机聚合物层）中形成用于引导线20的凹槽（例如，深度：约0.6mm）。形成在每个主辊10a，10b和10c的表面上。线20的相邻线之间的距离由引导槽的间距确定，引导槽的间距又由要切割工件的板的厚度确定。由硅氧烷弹性体等制成的无机聚合物层也可用作聚合物层。\n\n横向器42a和42b分别放置在卷轴筒40a和40b附近，用于调节卷取位置。五个引导辊44和一个张紧辊46放置在从每个卷轴筒管40a和40b到主辊10a的路线上，用于引导线20并且还调节线20的张力。线20的张力根据各种条件（切割长度，切割速度，线移动速度等）适当地改变。例如，它设定在20N至40N的范围内。\n\n如上所述制造的烧结体工件50以如下方式放置在线锯机100中。\n\n多个工件50通过例如由环氧树脂制成的粘合剂（未示出）彼此粘合，以一个堆叠在另一个上，形成多个块。这些块固定在铁质工作板54上，碳基板52介于它们之间。工作板54，工件块50和碳基板52也用粘合剂（未示出）彼此粘合。在切割工件50之后，通过金属丝20切割碳基板52，直到工作板54停止下降。也就是说，碳基板54用作用于保护工作板54的模拟件。\n\n在该实施例中，当在线20的行进方向上测量时，每个块的尺寸设计为约100mm。因此，在所示的示例中，用线20切割的长度约为200mm。在该实施例中，工件50被分组为如上所述的多个块。然而，当在线移动方向上测量时块的尺寸随着冷却剂的表面张力和线移动速度而变化。构成一个块的工件50的数量和布置也随着每个工件50的尺寸而变化。因此，考虑到这些因素，工件50应该适当地分组成最佳尺寸的块。\n\n如上所述放置的工件50通过设置有马达58的升降机降低并压靠在行进线20上以切割成片。工件50的下降速度例如设定在20mm / hr至50mm / hr的范围内，尽管它可以随条件而变化。\n\n存储在冷却剂贮存器60中的冷却剂通过排出泵62泵送到管道63中。管道63在中间分成下管道64和上管道66.下管道64和上管道66设有阀门63b和63a分别用于调节冷却剂到管道的流动。下管道64与设置在贮存器30底部的下喷嘴64a连通，贮存器30用于浸没切割部分。上部管道66与上部喷嘴66a，66b和66c连通，用于从贮存器30的开口和上部喷嘴66d和66e供应冷却剂，用于冷却主辊10b和10c。\n\n贮存器30通过上喷嘴66a，66b和66c以及下喷嘴64a接收冷却剂的供应。至少在切割过程中，冷却剂保持从贮存器30的开口溢出，如图2中的箭头F所示。从贮存器30溢出的冷却剂被引导到收集容器72中，收集盘70放置在贮存器30下方并被收集。收集的冷却剂通过循环管道76用排出泵74泵出到冷却剂贮存器60中。过滤器78放置在循环管道76的某处，用于分离和除去收集的冷却剂中的锯屑。收集方式不限于上述方式，而是可以提供通过使用磁力分离锯屑的机构（例如，参见美国专利申请序列号09 / 662,136）。\n\n参考图1。参照图2，将更详细地描述根据本发明的切割方法。\n\n贮存器30具有辅助壁32，辅助壁32沿着其侧壁形成在开口处，延伸以穿过线的行进方向。辅助壁32由塑料板（例如丙烯酸板）制成，并且当线未加载时靠近线移动位置放置，如图2中的虚线所示。当工件50下降并与导线20接触以进行切割时，导线20弯曲，如图2中的实线所示。如图2所示，允许切割部分浸入贮存器30中的冷却剂中。当金属丝20更加弯曲时，辅助壁32被金属丝20切割得更深，形成狭缝。一旦用线20切割达到稳定状态，弯曲量就变得恒定。现在，线20在穿过形成在辅助壁32中的狭缝的同时继续切割工件50.这样，形成在辅助壁32中的狭缝用于调节线20的线的行进位置并有助于稳定性。的加工精度。\n\n储存器30具有例如约35升（L）的体积。在翻边过程中，冷却剂通过下喷嘴64a以约30L / min的流速供应到贮存器30中，并且还经由上喷嘴66a，66b和66c以约90L的流速供应。因此，冷却剂保持从贮存器30的开口溢出。如果仅考虑向导线20供应冷却剂，则冷却剂不一定溢出，因为导线20在切割期间弯曲，如图所示。图。但是，为了提高锯屑的排出效率，本实施方式中的钕磁铁烧结体优选采用上述结构。\n\n为了提高锯屑的排出效率，减少切割部分附近的冷却剂中含有的锯屑量是有效的。为了确保足够的排放效率，冷却剂优选地每隔一分钟溢出储存器50％的容积。新鲜冷却剂优选地从贮存器30的开口供给比从其底部更多。由于使用含有水作为主要成分的低粘度冷却剂，释放到冷却剂中的锯屑容易沉降。如果冷却剂以较大的量从贮存器30的底部供应，则沉降锯尘将不利地被迫向上浮动以在切割部分附近浮动。\n\n为了增加从切口部分附近的开口供应的新鲜冷却剂的比例，优选的是将储存器30的区域中的冷却剂的量增加到行进线20的位置之上。除了从其底部供应来自贮存器30的开口的新鲜冷却剂，并且保持冷却剂从开口溢出之外，可以减少供应到切割部分的冷却剂中的锯屑量。此外，通过从贮存器30的开口供应的冷却剂的流动，可以自动冲洗附着到电线20的锯屑。\n\n除了由线20形成的狭缝之外的辅助壁32用作贮存器30的侧壁，由此冷却剂的液面S保持在升高状态。通过从储存器30的开口的侧面上的喷嘴66b和66c供应的冷却剂形成帘状流，该冷却剂穿过储存器30的开口的侧面，从而抑制冷却剂从储存器30的开口溢出，从而冷却剂的液面S比储液器30的辅助壁32膨胀得高。结果，在切割部分周围供应更大量的冷却剂，因此可以进一步减少冷却剂中的锯屑量。用于形成上述冷却剂流的输送压力优选在0.2MPa（2kgf / cm 2）至1.0MPa（10kgf / cm 2）的范围内，更优选在0.4MPa（4kgf / cm 2）至0.6MPa（6kgf / cm2）。如果输送压力低于上述范围，则可能无法获得足够的效果。如果超过上述范围，则线20可能会摆动，结果，加工精度可能降低。\n\n优选地，冷却剂也被供应到主辊10b和10c，主辊10b和10c调节线20的行进位置。通过向主辊10b和10c供应冷却剂，聚合物层（例如，聚氨酯层）具有在每个主辊10b和10c的表面上形成的用于引导线20的线的凹槽被抑制温度升高。另外，可以冲洗附着或停留在电线20或引导槽上的锯屑（或污泥）。这防止了导线移动位置偏离并且导线20从凹槽中滑落。这也提供了提高放电效率的效果。\n\n添加到含有水作为主要成分的冷却剂中的表面活性剂的实例包括：作为阴离子类型，脂肪酸衍生物如脂肪酸皂和环烷酸皂，硫酸酯如长链醇硫酸酯和动物和植物磺化油。油和磺酸如石油磺酸盐;作为非离子型，聚氧乙烯如聚氧乙烯烷基苯基醚和聚氧乙烯单脂肪酸酯，多元醇如脱水山梨糖醇单脂肪酸酯，和烷醇酰胺如脂肪酸二乙醇酰胺。具体而言，通过添加约2重量％。可以将化学溶液型JP-0497N（由Castrol Ltd.制造）的％，水，表面张力和动摩擦系数调节到相应的预定范围内。\n\n合成润滑剂的实例包括合成溶液型，合成乳液型和合成可溶型润滑剂。其中，优选合成溶液型润滑剂。具体地，可以使用SYNTILO 9954（由Castrol Ltd.制造）和＃830和＃870（由Yushiro Chemical Industry Co.，Ltd。制造）。在任何一种情况下，通过添加约2重量％。 ％至10重量％可以将表面张力（或动摩擦系数）的润滑剂％调节到优选的范围内。\n\n通过添加防腐蚀剂可以防止稀土合金的腐蚀。特别地，在切割R-Fe-B稀土合金时，pH优选设定为8至11，更优选9或更高。防腐剂的实例包括：作为有机类型，诸如油酸酯和苯甲酸酯的羧酸盐和诸如三乙醇胺的胺;和无机类型，磷酸盐，硼酸盐，钼酸盐，钨酸盐和碳酸盐。\n\n作为有色金属防腐剂，可以使用诸如苯并三唑的氮化物化合物。作为防腐剂，可以使用甲醛供体如六氢三嗪。\n\n作为消泡剂，可以使用硅氧烷乳液。添加消泡剂具有减少冷却剂的发泡，改善冷却剂的渗透，改善冷却效果，防止线20的温度升高，以及减少异常温度升高和线20的异常摩擦的趋势的效果。 。\n\n参考图1。参照图3，将描述适用于本实施例的锯线20的结构。注意，在图在图3中，简化了导线20相对于单点划线所示的中心线的下半部分。\n\n作为线材20，适合使用的是具有金刚石磨粒24的金属丝，金刚石磨粒24通过树脂层26固定到芯线（钢琴线）22的外周。作为树脂，酚醛树脂，环氧树脂或聚酰亚胺优选使用树脂。这些树脂对钢琴丝（硬钢丝）的外周具有高粘合强度，并且对于上述冷却剂的润湿性（渗透性）也是优异的。\n\n线20的优选示例是外径为0.24mm的线，其中平均粒径为约45μm的金刚石磨粒通过树脂固定到具有约0.18mm直径的钢琴线22的外周。层26由酚醛树脂制成。从锯屑（污泥）的切削效率和排出效率的观点来看，相邻磨粒之间在钢丝行进方向（轴向方向;平行于图3中的单点划线的方向）上的平均距离优选为在磨粒的平均粒径D的150％至600％的范围内。特别地，优选地，具有小平均粒径D的磨粒以平均粒间距离放置在磨粒的平均粒径D的150％至400％的范围内。通过这种放置，可以减少各个磨粒上的负荷。从酚醛树脂层26的表面突出的磨粒部分的平均高度优选在10μm至40μm的范围内。所得到的线材20在磨粒22之间具有适当尺寸的空间28（也称为“碎屑袋”），这有助于提供良好的切割效率和良好的排出效率。\n\n（实施例2）\n\n参照图1，对本发明的实施方式2的稀土合金的切断方法进行说明。 4。\n\n图。图4示意性地示出了适用于实施本发明实施例2的稀土合金切削方法的线锯机200的结构。\n\n除了实施例1的线锯机100的部件之外，线锯机200还包括喷雾器80a和80b，用于将冷却剂分别供应到缠绕在卷轴筒40a和40b周围的线20的部分。在本实施方式中，由于使用了用树脂固定有磨粒的线材20，因此采用喷雾来有效地向线材20供给少量的冷却剂。\n\n如图1所示。例如，如图5所示，冷却剂（例如200ml / min）和空气（例如0.4MPa）被送到喷雾器80a，80b的喷嘴，使得冷却剂可以喷洒在喷雾器80a，80b的整个部分上。线20围绕卷轴筒40a，40b缠绕（芯外径：170mm，高度：340mm，例如）。作为冷却剂，通常使用存储在冷却剂贮存器60中的冷却剂，这将在后面描述，并且通过带有排出泵的管道泵送到喷雾器80a和80b中。或者，可以通过提供单独的冷却剂储存器来使用与供应到切割部分的冷却剂不同的冷却剂，以将冷却剂供应到喷雾器80a和80b。\n\n可以限制喷射冷却剂的区域以减少冷却剂对线的损坏和/或减少所使用的冷却剂的量。可以提供一种机构，用于选择性地将冷却剂供应到正在进行卷绕（或退绕）操作的区域，从而与所示的横动器42a，42b的运动同步地产生线20的相邻绕组之间的摩擦。在图1中特别是线材20的磨粒通过摩擦损坏线材20的树脂层。如实施例1中所述，线20沿交替方向行进。因此，当行进方向反转时，线20产生强烈的张力。\n\n用于供应冷却剂的装置不限于图示的喷雾器80a和80b，而是可以使用下落装置等。当要供应相对大量的冷却剂时，可以在每个卷轴筒管40a和40b下方设置收集盘，用于收集和再利用过量的冷却剂。优选在冷却剂的收集路径上设置过滤器和/或磁力分离器，以分离和除去收集的冷却剂中包含的锯屑。\n\n在该实施例中，冷却剂在缠绕在卷轴筒管上之后喷射在线上。或者，可以在卷绕在卷轴筒管上之前立即将冷却剂供应到线材。当导线的两个绕组中的至少一个彼此接触是湿的时，可以减少对固定到其上的磨料颗粒的损坏。\n\n由导线20的相邻绕组之间的相互摩擦引起的损坏也取决于导线20的张力。因此，优选地提供一种机构，用于减小绕线轴40a，40b绕线20的张力。作为降低卷绕张力的机构，可以使用日本公开专利公报No.9-29607,9-314548,10-166353和10-277914中公开的机构。卷轴筒40a和40b处的卷绕张力优选为15N或更小。为了避免卷轴筒40a和40b上的缠绕线通过下垂或滑落而脱出或排序，卷绕张力优选为4N或更大。如果它小于4N，则树脂可能会脱落。\n\n使用上述线锯机200，实际上用Allied Material Corp.制造的线切割钕磁铁合金，满足实施例1中讨论的规格，并检查切割效果。在最大行进速度为1100米/分钟，张力为30N，切割速度为40毫米/小时，新鲜电线供给率为2的条件下，电线交替地沿相反方向行进进行切割。 m / min，使用由Yushiro Chemical Industry Co.，Ltd。制造的＃830的约10％的水溶液（温度：23℃）作为以200ml / min的供应速率喷射到卷轴筒管的冷却剂。 。结果，在操作期间脱落的磨粒量和树脂层的比例减少到当没有冷却剂喷射到卷轴筒40a和40b时观察到的约三分之一（线长：38km） ）。当调节Yushiro＃830的浓度以获得动摩擦系数为0.1至0.13，表面张力为33至36mN / m，粘度为1至4mPa的冷却剂时，获得基本相同的结果。 s（运动粘度为1至4 mm2 / s）。\n\n如上所述，在实施例2中，当在线锯机中使用含有水的冷却剂作为主要成分来切割稀土合金时，可以延长线的寿命。尽管通过将本实施例的特征与实施例1的切割方法相结合可以获得最佳效果，但是可以以不同的方式执行向切割部分供应冷却剂。\n\n在下文中，将描述实施例1的线锯机100和实施例2的线锯机200的主辊10a，10b和10c的优选结构。\n\n当使用含有水作为主要成分的冷却剂时，与使用油基冷却剂时相比，线材卡合的速度高，即，线材在短时间内易于卡扣。根据各方面的检查结果，认为其原因如下。与油基冷却剂相比，水基冷却剂的润滑性低，因此不能充分地减小金属丝与辊的引导槽的斜面之间的摩擦。磨粒可能会咬住辊子导向槽斜面的表面。结果，扭力施加到线材上。\n\n通过采用以下结构可以抑制线20的卡扣。图。图6示意性地示出了形成在辊10a的聚合物层10P中的引导槽10G的横截面形状，其中引导槽10G的一对斜面10S相对于50度或更大的角度（倾斜角）具有50度或更大的角度。辊10a的表面10T。如图所示，构成引导槽10G的斜面10S优选地相对于辊10a的表面10T具有50度或更大的角度。然而，只要斜面10S中的至少一个相对于表面10T具有50度或更大的角度，就可以获得抑制卡扣发生的效果。\n\n相反，传统的辊子采用如图1所示的结构。例如，如图7所示，引导槽10G的斜面10S相对于辊的表面具有45度或更小的角度。稀土合金具有导致脆性断裂的主相和引起韧性断裂的晶界相，其切削阻力高。而且，由于稀土合金的比重大，因此锯屑（或污泥）的排出效率差。由于这些原因，通常采用这种结构以确保从引导槽10G有效和充分地排出污泥。然而，在斜面10S具有45度或更小的倾斜角的引导槽10G中，在斜面10S和线20之间产生大的摩擦，这倾向于引起线20的卡扣。在线20沿交替方向行进的情况下，当行进方向反转时，线20产生强烈的张力。\n\n使用线锯机100评估线的卡扣次数，用于在斜面10S的倾斜角度不同的多组辊10a，10b和10c。聚氨酯橡胶层用作聚合物层10P，并且约10％的Yushiro＃830的水溶液用作冷却剂。将实施例1中使用的稀土烧结磁体的工件连续切割300小时，并测量在该操作期间线20咬合的次数。结果在下面的表1中示出为斜面10S的倾斜角度与卡合的次数之间的关系。\n\n表1倾斜角度（度）3040505560657080捕捉次数1211333345\n\n如表1所示，通过将引导槽10G的斜面10S的倾斜角设定为50度或更大，减少了卡扣的次数。这可能是因为当倾斜角为50度或更大时，由于斜面10S和线20之间的摩擦而施加到线20的扭转减小。当倾斜角为70度或更大时，卡扣的次数趋于略微增加，可能是因为污泥的排出效率降低。根据该实验的结果，发现引导槽10G的斜面10S的倾斜角优选地在50度和80度之间的范围内，更优选地在50度和65度之间的范围内。如果倾斜角超过80度，则线20从引导槽10G脱离的可能性增加。引导槽10G优选地具有弯曲底部10B，弯曲底部10B的曲率半径略小于线20的半径。\n\n线20卡扣的次数也取决于在辊之间行进的线20的张力。上面的表1示出了当线20的张力为30N时获得的结果。当线20的张力在25N和35N之间的范围内时，获得基本相同的重新适应。\n\n因此，根据本发明，提供了一种用磨粒固定线切割稀土合金的方法，这可以通过使用含有水的冷却剂作为主要成分来实现。而且，根据本发明，通过减少对固定在电线和电线本身上的磨粒的损坏，可以延长电线的寿命。此外，根据本发明，提供了适合用于上述切割方法的线锯机。\n\n通过采用本发明的切削方法，可以以较小的切削余量以高加工精度切削稀土合金。因此，可以使稀土金属合金的昂贵材料的损失最小化。此外，可以容易地实现冷却剂的再循环，其对环境友好并且还降低了废液处理的成本。这样可以降低加工稀土金属合金的成本，从而实现合金切割产品的低成本制造，例如用于定位磁头的音圈电动机的稀土磁体。\n\n尽管在上述实施例中举例说明了线锯机100和200，但是本发明可以应用于采用单卷轴筒的环形线锯机（参见日本特开平11-198018号公报）。 ， 例如）。\n\n虽然已经在优选实施例中描述了本发明，但是对于本领域技术人员来说显而易见的是，可以以多种方式修改所公开的发明，并且可以采用除了上面具体陈述和描述的实施例之外的许多实施例。因此，所附权利要求旨在覆盖落入本发明的真正精神和范围内的本发明的所有修改。');
INSERT INTO `os_patent_instruction_text` VALUES (12923, 22752, 'TECHNICAL FIELD\n\n[0001]The present invention relates to a method for producing a granulated powder of an R—Fe—B alloy and a method for producing an R—Fe—B alloy sintered body using the granulated powder.\n\nBACKGROUND ART\n\n[0002]A sintered magnet (permanent magnet) of a rare earth alloy is generally produced by compacting powder of the rare earth alloy, sintering the resultant powder compact and subjecting the sintered body to aging. At present, two types of magnets, samarium-cobalt magnets and neodymium-iron-boron magnets, are extensively used in various fields. Among others, neodymium-iron-boron magnets (hereinafter, referred to as “R—Fe—B magnets” where R is any of the rare earth elements including Y, Fe is iron and B is boron) are higher in maximum energy product than any of other various types of magnets, and yet relatively inexpensive. Therefore, the R—Fe—B magnets find positive applications to various types of electronic appliances.\n\n[0003]The R—Fe—B sintered magnet is essentially composed of a major phase of an R2Fe14B compound of tetragonal system, an R-rich phase made of Nd and the like, and a B-rich phase. A transition metal such as Co and Ni may substitute for part of Fe, and carbon (C) may substitute for part of boron (B). R—Fe—B sintered magnets to which the present invention is suitably applied are described in U.S. Pat. Nos. 4,770,723 and No. 4,792,368, for example.\n\n[0004]To prepare an R—Fe—B alloy from which the magnet described above is produced, an ingot casting process has been conventionally employed. In a normal ingot casting process, rare earth metal, electrolytic iron and a ferroboron alloy as starting materials are subjected to high-frequency melting, and the resultant melt is cooled relatively slowly in a casting mold, to thereby obtain an alloy ingot.\n\n[0005]Recently, a rapid cooling process such as a strip casting process and a centrifugal casting process has attracted much attention in the art. In the rapid cooling process, a molten alloy is brought into contact with a single roll, a twin roll, a rotating disk, the inner wall of a rotating cylindrical casting mold or the like, to permit comparatively rapid cooling of the molten alloy and in this way, prepare a solidified alloy thinner than an alloy ingot from the molten alloy (hereinafter, such a solidified alloy is called “alloy flakes”). The alloy flakes prepared by such a rapid cooling process normally have a thickness in the range of about 0.03 mm to about 10 mm. According to the rapid cooling process, the molten alloy starts to be solidified from a surface thereof brought into contact with the chill roll (roll contact surface), and crystals grow in a columnar shape in the thickness direction from the roll contact surface. The resultant rapidly solidified alloy, prepared by the strip casting process or the like, has a structure essentially composed of an R2Fe14B crystalline phase, having a minor-axis size of about 0.1 μm to about 100 μm and a major-axis size of about 5 μm to about 500 μm, and an R-rich phase dispersed in the grain boundary between the R2Fe14B crystalline phases. The R-rich phase is a non-magnetic phase including a rare earth element R in a relatively high concentration, and has a thickness (corresponding to the width of the grain boundary) of about 10 μm or less.\n\n[0006]Compared to an alloy prepared by the conventional ingot casting process (die casting process) (hereinafter, such an alloy is called an “ingot alloy”), the rapidly solidified alloy has been cooled in a relatively shorter time (cooling rate: 102° C./sec to 104° C./sec). Accordingly, the rapidly solidified alloy has features that the structure is fine and the crystal grain size is small. In addition, the area of the grain boundary is large and the R-rich phase is dispersed broadly in the grain boundary. Therefore, the rapidly solidified alloy has another feature of excelling in the dispersiveness of the R-rich phase. By using the rapidly solidified alloy having these features, a magnet with excellent magnetic properties can be produced.\n\n[0007]An alloy preparation method called a Ca reduction process (or reduction-diffusion process) is also known. This process includes the following steps. First, metal calcium (Ca) and calcium chloride (CaCl) are added to either a mixed powder including at least one kind of rare earth oxide, iron powder, pure boron powder and at least one kind of ferroboron powder and boron oxide at a predetermined ratio or a mixed powder including alloy powders or mixed oxides of these constituent elements at a predetermined ratio. The resultant mixture is subjected to reduction-diffusion treatment in an inert atmosphere. The resultant reaction product is put into a slurry state, and the slurry is then treated with water, to thereby obtain a solid of an R—Fe—B alloy.\n\n[0008]A block of a solid alloy is herein called an “alloy block”. The “alloy block” will be any of various forms of solid alloys including not only solidified alloys obtained by cooling melts of an alloy ingot prepared by the conventional ingot casting process, alloy flakes prepared by the rapid cooling process such as the strip casting process and the like, but also a solid alloy prepared by the Ca reduction process.\n\n[0009]An alloy powder to be compacted is obtained by coarsely pulverizing an alloy block in any form by a hydrogen pulverization process, for example, and/or any of various mechanical milling processes (for example, using a disk mill), and finely pulverizing the resultant coarse powder (mean particle size: 10 μm to 500 μm, for example) by a dry milling process using a jet mill, for example.\n\n[0010]The R—Fe—B alloy powder to be compacted should preferably have a mean particle size of 1.5 μm to 5 μm from the standpoint of the resultant magnetic properties. “The mean particle size” of a powder herein refers to a mass median diameter (MMD) unless otherwise specified. A powder having such a small mean particle size is however poor in flowability and compactibility (including cavity loading capability and compressibility), and thus poor in productivity.\n\n[0011]To solve the above problem, coating alloy powder particles with a lubricant has been examined. For example, Japanese Laid-Open Patent Publication No. 08-111308 and its corresponding U.S. Pat. No. 5,666,635 (Assignee: Sumitomo Special Metals Co., Ltd.) disclose the following technique. A lubricant of at least one kind of fatty ester in a liquid form is added in an amount of 0.02 mass % to 5.0 mass % to a rough powder of an R—Fe—B alloy having a mean particle size of 10 μm to 500 μm, and the resultant mixture is pulverized with a jet mill using an inert gas, to prepare a fine powder having a mean particle size of 1.5 μm to 5 μm.\n\n[0012]A lubricant improves the flowability and compactibility of powder, and also functions as a binder for imparting rigidity (strength) to a compact. The lubricant however remains in a sintered body as residual carbon causing degradation of magnetic properties, and is therefore required to have good removability. For example, Japanese-Laid Open Patent Publication No. 2000-306753 discloses, as a lubricant having good removability, a depolymerized polymer, a mixture of a depolymerized polymer and a hydrocarbon-based solvent, and a mixture of a depolymerized polymer, a low-viscosity mineral oil and a hydrocarbon-based solvent.\n\n[0013]Use of a lubricant described above contributes to some degree of improvement, but fails in imparting sufficient compactibility. In particular, a powder prepared by the strip casting process, which is not only small in mean particle size but also narrow in particle size distribution, is especially poor in flowability. This causes problems such that the amount of powder loaded in a cavity tends to vary beyond an acceptable range, and that the loading density in the cavity tends to lack uniformity. As a result, the mass and size of the resultant compact may vary beyond an acceptable range, and chips and fractures may be formed in the compact.\n\n[0014]As another method for improving the flowability and compactibility of a R—Fe—B alloy powder, use of a granulated powder has been attempted.\n\n[0015]For example, Japanese Laid-Open Patent Publication No. 63-237402 discloses that compactibility can be improved by use of a granulated powder obtained by adding a mixture of a paraffin mixture that is in the liquid state at room temperature and an aliphatic carboxylic acid in an amount of 0.4 to 4.0 mass % with respect to a powder, and kneading and then granulating the resultant mixture. A method using polyvinyl alcohol (PVA) as a granulating agent is also known. Like the lubricant, the granulating agent functions as a binder imparting strength to a compact.\n\n[0016]The granulating agent disclosed in Japanese Laid-Open Patent Publication No. 63-237402 described above is poor in removability. Therefore, in the case of production of an R—Fe—B sintered magnet, the magnetic properties disadvantageously degrade due to carbon remaining in a sintered body.\n\n[0017]In the method using PVA, a granulated powder prepared by a spray dryer process using PVA has strong binding force. The resultant granulated powder is too rigid to disintegrate under application of an external magnetic field. Therefore, alloy particles (crystals) fail to be sufficiently aligned in the magnetic field, and as a result, no anisotropic magnet excellent in magnetic properties is obtainable.\n\n[0018]PVA is also poor in removability. Therefore, carbon derived from PVA tends to remain in the resultant magnet, causing degradation in magnetic properties. Debindering may be performed in a hydrogen atmosphere. Even with this treatment, however, it is difficult to sufficiently remove the carbon. Also, due to the excessively strong binding force of PVA, the granulated powder fails to disintegrate under application of a magnetic field and therefore finds difficulty in being aligned.\n\n[0019]As described above, although various granulating agents have been examined so far, there has not yet been succeeded in development of a granulating agent that has moderate binding force and is excellent in removability. Under this circumstance, a method permitting industrial-scale production of a granulated powder suitably usable for production of an R—Fe—B sintered body has not yet been attained.\n\n[0020]Needs for smaller/thinner magnets with higher performance have grown. In this situation, development of a method permitting production of small/thin magnets with high performance with high production efficiency is desired. In general, when an R—Fe—B alloy sintered body (or a magnet obtained by magnetizing the alloy sintered body) is machined, the magnetic properties of the machined product degrade due to machining strain. This degradation of the magnetic properties is not negligible for small magnets. In view of this, as the magnet is smaller, it is desired more strongly that a sintered body in a final use shape should be produced with a level of size accuracy high enough to substantially require no machining. Under this circumstance, also, the demand for an R—Fe—B alloy powder material excellent in flowability and compactibility has been increasingly intensified.\n\nDISCLOSURE OF INVENTION\n\n[0021]In view of the above problems, a main object of the present invention is providing a method for producing a granulated powder of an R—Fe—B alloy excellent in flowability and compactibility and also in binder removability, and a method for producing a high-quality R—Fe—B alloy sintered body with high production efficiency.\n\n[0022]To attain the object described above, the method for producing a granulated powder of an R—Fe—B alloy of the present invention includes the steps of: preparing an R—Fe—B alloy powder; and granulating the powder using at least one kind of granulating agent selected from a group consisting of normal paraffins, isoparaffins and depolymerized oligomers, to prepare a granulated powder.\n\n[0023]The mean particle size of the powder is preferably in a range of 1.5 μm to 5 μm.\n\n[0024]The mean molecular weight of the at least one kind of granulating agent is preferably in a range of 120 to 500.\n\n[0025]Further preferably, the at least one kind of granulating agent is normal paraffin and/or isoparaffin having a boiling point in a range of 80° C. to 250° C.\n\n[0026]In the step of granulating, the at least one kind of granulating agent is preferably added in an amount of 0.1 mass % to 50 mass % with respect to the mass of the granulated powder.\n\n[0027]The granulated powder is preferably prepared by a fluidized bed granulation process.\n\n[0028]The mean particle size of the granulated powder is preferably in a range of 0.05 mm to 3.0 mm, further preferably in a range of 0.1 mm to 2.0 mm.\n\n[0029]To attain the object described above, the method for producing an R—Fe—B alloy sintered body of the present invention includes the steps of: producing a granulated powder by the method for producing a granulated powder of an R—Fe—B alloy described above; compacting an R—Fe—B alloy powder material including the granulated powder in a state of being aligned under application of a magnetic field, to form a compact; and sintering the compact.\n\n[0030]The step of sintering is the step of heating the compact in an inert gas atmosphere or in a vacuum, and can also serve as the step of removing the granulating agent.\n\n[0031]The powder material substantially includes only the granulated powder.\n\n[0032]The R—Fe—B alloy sintered body produced by the method described above may be magnetized, to obtain an R—Fe—B sintered magnet excellent in magnetic properties.\n\nBRIEF DESCRIPTION OF DRAWINGS\n\n[0033]FIG. 1 is a flowchart showing the method for producing an R—Fe—B alloy sintered body of the present invention.\n\n[0034]FIG. 2 is a diagrammatic view of granulation equipment 10 used for production of an R—Fe—B alloy granulated powder of the present invention.\n\n[0035]FIG. 3 is a graph showing the relationship between the magnetic flux density of the aligning magnetic field and the remanence of the resultant sintered magnet, for granulated powders in Example 12 and Comparative Examples 6 and 9.\n\nBEST MODE FOR CARRYING OUT THE INVENTION\n\n[0036]Hereinafter, the method for producing an R—Fe—B alloy sintered body of an embodiment of the present invention will be described with reference to the accompanying drawings. In the following embodiment, features of the present invention will be described exemplifying a method for producing a sintered magnet using an R—Fe—B alloy powder prepared by the strip casting process. However, the present invention is in no way limited to this specific embodiment, but an R—Fe—B alloy powder prepared by any other process may be used.\n\n[0037]As shown in FIG. 1, the method for producing an R—Fe—B alloy sintered body of the present invention includes: step S1 of preparing a powder of an R—Fe—B alloy; step S2 of granulating the resultant powder with at least one kind of granulating agent selected from a group consisting of normal paraffins, isoparaffins and depolymerized oligomers, to produce a granulated powder; step S3 of compacting an R—Fe—B alloy powder material including the granulated powder in a state of being aligned under application of a magnetic field, to form a compact; and step S4 of sintering the compact. The resultant sintered body may be magnetized in a known way to obtain an R—Fe—B sintered magnet. The magnetization may be performed at an arbitrary time point after the sintering. For example, it may be performed immediately before use of the sintered magnet by the user.\n\n[0038]Although only the granulated powder prepared in the manner described above is preferably used as the R—Fe—B alloy powder material to be compacted from the standpoint of the flowability, a mixture of the granulated powder and a primary particle powder (pre-granulation material powder) may also be used. However, the flowability degrades with increase of the percentage of the primary particle powder. To sufficiently secure the effect of improving the flowability by granulation, therefore, substantial use of only the granulated powder is preferred. In the case of mixing the primary particle powder with the granulated powder, the primary particles are preferably coated with a lubricant. By coating the primary particles with a lubricant, the flowability of the R—Fe—B powder material can be improved, and also oxidation of the R—Fe—B alloy can be prevented.\n\n[0039]Note that as used herein, a powder material to be compacted, including not only the “R—Fe—B alloy powder” but also the granulating agent and the lubricant, is called the “R—Fe—B alloy powder material”, as being distinguished from the “R—Fe—B alloy powder” substantially composed of powder of only an R—Fe—B alloy (an oxide layer on the surface may be included).\n\n[0040]As described above, the flowability and compactibility are improved by granulating an R—Fe—B alloy powder using any of normal paraffins, isoparaffins and depolymerized oligomers or a mixture thereof. For example, by granulating a powder (primary particles) having a mean particle size in the range of 1.5 μm to 5 μm into a granulated powder having a mean particle size in the range of 0.05 mm to 3 mm, the flowability and compactibility are significantly improved. Such a granulated powder has moderate rigidity permitting no disintegration occurring during transportation and loading. Therefore, a predetermined amount of the powder material can be loaded in a cavity stably and uniformly. Also, since the granulated powder has moderate rigidity, it disintegrates into the primary particles under application of an aligning magnetic field of 0.1 T to 0.8 T, and the primary particles are aligned in the magnetic field. A higher aligning magnetic field (for example, 2 T) may be applied. In addition, the resultant compact hardly has chips and fractures.\n\n[0041]All of the granulating agents mentioned above are excellent in removability. They can be easily removed during sintering in an atmosphere of an inert gas such as argon gas (including rare gas and nitrogen gas) or in a vacuum. Therefore, with no degradation in magnetic properties due to residual carbon, a sintered magnet having excellent magnetic properties is obtained.\n\n[0042]As described above, with use of the granulated powder described above, R—Fe—B alloy sintered bodies excellent in magnetic properties with a reduced variation in mass (that is, loading amount) can be produced with high production efficiency\n\n[0043]The method for producing a magnet of the R—Fe—B alloy sintered body of the embodiment of the present invention will be described in the order of the steps.\n\n[0044]First, R—Fe—B alloy flakes are prepared by the strip casting process (see U.S. Pat. No. 5,383,978, for example). Specifically, an R—Fe—B alloy prepared by a known method is subjected to high-frequency melting to obtain a molten alloy. As the R—Fe—B alloy, those having compositions described in U.S. Pat. No. 4,770,723 and No. 4,792,368 can be suitably used, in addition to that described above.\n\n[0045]The molten alloy is held at 1350° C., and then rapidly cooled on a single roll under the conditions of a roll circumferential velocity of about 1 m/sec, a cooling rate of 500° C./sec and a supercooling temperature of 200° C., to obtain alloy flakes having a thickness of 0.3 mm. The alloy flakes are then allowed to occlude hydrogen to be made brittle, to thereby obtain a rough alloy powder. The rough alloy powder is finely pulverized with a jet mill in a nitrogen gas atmosphere, to obtain an alloy powder (primary particles) having a mean particle size of 1.5 μm to 5 μm and a BET specific surface of about 0.45 m2/g to about 0.55 m2/g, for example. The true density of the alloy powder is 7.5 g/cm3.\n\n[0046]The alloy powder obtained is then granulated.\n\n[0047]As the granulating agent, used is at least one kind of granulating agent selected from normal paraffins, isoparaffins and depolymerized oligomers. Naturally, a mixture of these agents may be used. Examples of preferred depolymerized oligomers include a copolymer of isobutylene and normal butylene, a homopolymer of isobutylene, a homopolymer or copolymer of alkyl methacrylate (for example, methyl methacrylate, ethyl methacrylate, propyl methacrylate, butyl methacrylate, isobutyl methacrylate and tertiary butyl methacrylate), and a homopolymer or copolymer of alkylene glycol (for example, ethylene glycol and propylene glycol). The depolymerized oligomer has a comparatively large number of branch structures in molecules, and for this reason, is considered having a comparatively high viscosity and moderate binding force.\n\n[0048]In addition to the granulating agent described above, a terpene resin (for example, rosin, a terpene phenol resin and a dimmer of limonene) or an aliphatic resin (for example, polymers of butylene, pentene and the like) may be added to improve the binding force. The added amount of such a resin is preferably in the range of 0.05 mass % to 1.0 mass %.\n\n[0049]The granulating agents described above have lubricity and moderate binding force, and also are excellent in removability. The mean molecular weight of the granulating agents is preferably in the range of 120 to 500. A granulating agent of which the mean molecular weight is below 120 is weak in binding force, finding difficulty in providing a stable granulated powder. A granulating agent of which the mean molecular weight exceeds 500 has a large amount of carbon remaining in the resultant sintered body, and this disadvantageously degrades the magnetic properties. The mean molecular weight is more preferably in the range of 140 to 450.\n\n[0050]Among the normal paraffins and isoparaffins, a material preferred with respect to the boiling point can be specified. One having a boiling point in the range of 80° C. to 250° C. is preferred. One having a boiling point below 80° C. is weak in binding force, finding difficulty in providing a stable granulated powder. One having a boiling point exceeding 250° C. has a large amount of carbon remaining in the resultant sintered body, and this disadvantageously degrades the magnetic properties. As for the normal paraffins and isoparaffins, therefore, one having a mean molecular weight in the range of 140 to 450 or a boiling point of 100° C. to 230° C. is further preferred. By addition of a comparatively small amount of such a material, a sufficient effect will be obtained.\n\n[0051]Naturally, in the case of using a mixture of two or more kinds of normal paraffins, isoparaffins and depolymerized oligomers, the respective components should preferably satisfy the conditions described above.\n\n[0052]The added amount of the granulating agent used for preparation of the granulating powder is preferably in the range of 0.1 mass % to 50 mass % with respect to the mass of a powder. If the added amount of the granulating agent is below 0.1 mass %, the powder (primary particles) fail to be granulated. If it exceeds 50 mass %, the binding force becomes so strong that disintegration of the granulating powder under application of a magnetic field is difficult. In addition, the amount of carbon remaining in the resultant sintered body is large, causing degradation in magnetic properties. The added amount of the granulating agent is more preferably 0.1 mass % to 10 mass %, further more preferably 0.2 mass % to 10 mass %.\n\n[0053]The granulating step is executed by any of various known processes. For example, an agitating granulation process, a vibrating granulation process, a tumbling granulation process, a fluidized bed granulation process and the like may be used. Among others, the fluidized bed granulation process is preferred, in which the resultant granulated powder has a particle shape close to a sphere and also has moderate rigidity. A granulated powder in a near-spherical shape is excellent in flowability and compactibility. The rigidity of the granulated powder, which may also be affected by the granulating agent, will cause a problem if it is excessively high or low as described above.\n\n[0054]Granulation equipment 10 for granulating a powder by the fluidized bed granulation process is diagrammatically shown in FIG. 2. The granulation equipment 10 includes an air blower 1, a thermostat/humidistat 2, a fluidization tank 3, switch valves 4 and an inverse pressure blower 6. As such granulation equipment 10, a swing processor from Fuji Paudal Co., Ltd. can be suitably used.\n\n[0055]First, with an airflow supplied from the air blower 1, normal fluidization is performed in the fluidization tank 3. The air flows as shown by the solid arrows in FIG. 2 under positive pressure (fluidization stage). Thereafter, by switching the switch valves 4, the air flows as shown by the dashed lines in FIG. 2 with the inverse pressure blower 6 (compaction stage). In the compaction stage, a powder layer is formed and compressed with a downward airflow, increasing the rigidity of a granulated powder. The powder layer formed in the compaction stage is then broken with an upward airflow, and by an abrasion function of the fluidized air, formed into a granulated powder in a near-spherical shape. The switch valves 4 may be repeatedly switched. By controlling the air amount and the repetition cycle, the rigidity of the granulated powder can be adjusted. In addition, by controlling the duration of the granulating step, the mean particle size of the granulated powder can be adjusted.\n\n[0056]The mean particle size of the granulated powder is preferably in the range of 0.05 mm to 3.0 mm. In general, the amount of primary particles included in the granulated powder is miniscule, and also the amount of tertiary or higher-order particles is very small. Therefore, the mean particle size of the secondary particles can be substantially regarded as representing the mean particle size of the granulated powder. Herein, as the mean particle size of the granulated powder, the mean particle size of the secondary particles as measured from microscopic observation is used. If the mean particle size of the granulated powder is below 0.05 mm, the effect of improving the flowability is small. Therefore, it is difficult to obtain a compact uniform in density. If the mean particle size of the granulated powder exceeds 3 mm, uniform loading of the powder in a cavity is difficult. Therefore, it is difficult to obtain a uniform compact with sufficient density. The mean particle size of the granulated powder is more preferably in the range of 0.1 mm to 2.0 mm.\n\n[0057]The resultant granulated powder is then compacted to produce a compact. Herein, assume that a compact is produced using only a granulated powder. Any of known press equipment may be used for the compaction. Typically, a uniaxial press is used in which powder in a cavity of a die (die hole) is compacted with upper and lower punches. The granulated powder is transported per batch with a highly airtight container with nitrogen gas filled or flown therein.\n\n[0058]The granulated powder is loaded into a cavity of a die of a uniaxial press. This loading can be realized by a method using a sieve, or any of methods using a feeder box described in Japanese Patent Publication for Opposition No. 59-40560, Japanese Laid-Open Patent Publication No. 10-58198, Japanese Laid-Open Utility Model Publication No. 63-110521 and Japanese Laid-Open Patent Publication No. 2000-248301 (these methods are collectively called a “drop method” in some cases due to their use of gravity drop).\n\n[0059]In the case of producing a small compact, in particular, the granulated powder is preferably metered using the cavity to correspond to the volume of the capacity. For example, during loading of the granulated powder into the cavity, the granulated powder may be leveled off from the cavity with a bar member of a feeder box reciprocating above the cavity. By this way of loading, a predetermined amount of granulated powder can be loaded comparatively uniformly.\n\n[0060]Once the granulated powder is loaded in the cavity, the upper punch of the uniaxial press is lowered, and a magnetic field is applied after the opening of the cavity is closed, to allow the granulated powder to disintegrate into primary particles and also the primary particles to be aligned in the magnetic field. The granulated powder according to the present invention, which has moderate rigidity, disintegrates under a comparatively weak magnetic field of 0.1 T to 0.8 T. For securing a sufficient degree of alignment, however, a magnetic field of 0.5 T to 1.5 T is desirable. The magnetic field is applied in the direction perpendicular to the compacting direction. Under the application of the magnetic field in this way, the powder material is uniaxially compacted with the upper and lower punches at a pressure of 98 MPa, for example. As a result, a compact with a relative density (=density of the compact/true density) of 0.5 to 0.7 is obtained. The direction of the magnetic field may be parallel with the compacting direction if this is appropriate. A static magnetic field or a pulse magnetic field may be used as the aligning magnetic field.\n\n[0061]The compact obtained is then sintered at a temperature of about 1000° C. to about 1180° C., for example, in a vacuum or in an inert gas atmosphere (compressed, preferably) for about one to six hours. The granulating agent according to the present invention, which is excellent in removability, is substantially removed during this sintering. That is to say, the sintering step can serve as the debindering step. Alternatively, the debindering step may be provided separately before the sintering step. For example, the debindering step may be performed at a temperature of about 200° C. to about 800° C. in a compressed inert gas atmosphere at a pressure of about 2 Pa for about three to six hours.\n\n[0062]The resultant sintered body is subjected to aging at a temperature of about 450° C. to about 800° C., for example, for about one to eight hours, to obtain an R—Fe—B sintered magnet. The R—Fe—B sintered magnet is finally completed by magnetization at a subsequent arbitrary stage.\n\n[0063]According to the present invention, in which a granulated powder excellent in flowability and compactibility is used as described above, the powder can be loaded into the cavity uniformly with a reduced variation in loading amount. Therefore, variations are small in the mass and size of the compacts obtained by the compaction. Also, chips and fractures are less formed in the compacts. In addition, degradation in magnetic properties, which may occur if the granulating agent remains in the sintered body, is suppressed. Therefore, a sintered magnet excellent in magnetic properties can be attained. In this way, according to the present invention, a high-quality R—Fe—B alloy sintered magnet can be produced with high production efficiency.\n\nEXAMPLES\n\n[0064]Hereinafter, examples of the present invention will be described.\n\n[0065]An R—Fe—B alloy powder was prepared in the following manner. A molten alloy was prepared using 99.9% purity electrolytic iron, a ferroboron alloy containing 19.8% of B, and Nd and Dy having a purity of 99.7% or more as the starting materials. The molten alloy obtained was subjected to the strip casting process, to obtain R—Fe—B alloy flakes having a composition of 14.5 at. % of Nd, 0.5 at. % of Dy, 78.8 at. % of Fe and 6.2 at. % of B. The flakes obtained were finely pulverized in an inert gas atmosphere (for example, N2 gas at a gas pressure of 58.8 MPa) with a jet mill, to obtain a fine powder having a mean particle size of 3 μm.\n\n[0066]A granulated powder was produced by the fluidized bed granulation process (using a swing processor from Fuji Paudal Co., Ltd., for example). Various kinds of granulating agents were used for the granulation. The compositions and amounts of the granulating agents used for production of granulated powders in Examples 1 to 16 are shown in Tables 1 and 2. The compositions of granulating agents used for production of granulated powders in Comparative Examples 1 to 9 are shown in Table 3. The granulation using PVA as the granulating agent in Comparative Examples 6, 7 and 8 was performed with a spray dryer. In Comparative Example 9, no granulation was performed, but fine powder was used as it was.\n\n[0067]The granulated powder obtained was loaded into cavities of 20 mm long×15 mm wide×10 mm deep by a method using a feeder box described above, and then uniaxia', '技术领域 \n\n [0001] R-Fe-B合金的造粒粉体的制造方法及使用该造粒粉的R-Fe-B合金烧结体的制法。 \n\n 背景技术 \n\n [0002] 稀土合金的烧结磁体(永磁体)通常是通过将稀土合金粉末压制,烧结所得粉末压块并使烧结体时效而制备的。 目前,two磁体,钴钴磁体和钕铁硼磁体这两种磁体已广泛应用于各个领域。 其中,钕铁硼磁体(以下称为“ R-Fe-B磁体”,其中R为包括Y的任何稀土元素,Fe为铁,B为硼)的最大能量乘积高于 其他各种类型的磁铁中的任何一种,而且价格相对便宜。 因此,R-Fe-B磁体在各种类型的电子设备中都有积极的应用。 \n\n [0003] R-Fe-B烧结磁体基本上由R的主相组成 2 铁 14 四方晶系的B化合物,由Nd等构成的富R相和富B相。 诸如Co和Ni的过渡金属可以替代部分Fe,而碳(C)可以替代部分硼(B)。 适用于本发明的R-Fe-B烧结磁体在美国专利No. 例如,第4,770,723号和第4,792,368号。 \n\n [0004] 为了制备由其制造上述磁体的R-Fe-B合金,通常采用铸锭法。 在通常的铸锭铸造工艺中,将作为起始原料的稀土金属,电解铁和铁硼合金进行高频熔融,并且将所得的熔体在铸模中相对缓慢地冷却,从而获得合金铸锭。 \n\n [0005] 近来,诸如带材铸造工艺和离心铸造工艺的快速冷却工艺已在本领域引起了很多关注。 在快速冷却过程中,使熔融合金与单辊,双辊,旋转盘,旋转的圆筒形铸模的内壁等接触,以允许相对快速地冷却熔融合金,并且 这样,从熔融合金制备比合金锭薄的固化合金(以下,将该固化合金称为“合金薄片”)。 通过这种快速冷却工艺制备的合金薄片通常具有约0.03mm至约10mm的厚度。 根据快速冷却过程,熔融合金从与冷却辊接触的表面(辊接触表面)开始固化,并且晶体从辊接触​​表面在厚度方向上以圆柱状生长。 通过带钢浇铸法等制备的所得快速凝固合金具有基本上由R构成的结构。 2 铁 14 B结晶相,具有约0.1μm至约100μm的短轴尺寸和约5μm至约500μm的长轴尺寸,并且富R相分散在R之间的晶界中 2 铁 14 B晶相。 富R相是包括相对较高浓度的稀土元素R的非磁性相,并且具有约10μm或更小的厚度(对应于晶界的宽度)。 \n\n [0006] 与通过常规的铸锭法(压铸法)制备的合金(以下,称为“锭合金”)相比,快速固化的合金在较短的时间内被冷却(冷却速度:10) 2 °C /秒至10 4 ℃/秒)。 因此,快速凝固的合金具有组织细且晶粒尺寸小的特征。 另外,晶界的面积大,富R相广泛地分散在晶界中。 因此,快速凝固的合金在富R相的分散性方面具有优异的另一特征。 通过使用具有这些特征的快速凝固的合金,可以制造具有优异的磁性能的磁体。 \n\n [0007] 还已知一种称为Ca还原过程(或还原扩散过程)的合金制备方法。 此过程包括以下步骤。 首先,将金属钙(Ca)和氯化钙(CaCl)以预定的比例添加到包括至少一种稀土氧化物,铁粉,纯硼粉以及至少一种铁硼硼粉和氧化硼的混合粉末中。 可以以预定的比例混合或混合这些粉末,或者包括这些构成元素的合金粉末或混合氧化物。 将所得混合物在惰性气氛中进行还原-扩散处理。 将所得反应产物置于淤浆状态,然后将淤浆用水处理,从而获得R-Fe-B合金的固体。 \n\n [0008] 固态合金块在本文中被称为“合金块”。  “合金块”将是各种形式的固体合金中的任何一种,不仅包括通过冷却由常规的铸锭工艺制备的合金铸锭的熔体获得的凝固合金,还包括通过诸如带钢铸造工艺的快速冷却工艺和通过快速冷却工艺制备的合金薄片。 等等,也可以是通过Ca还原工艺制备的固态合金。 \n\n [0009] 通过例如通过氢粉碎工艺和/或各种机械研磨工艺(例如,使用盘磨机)中的任何一种粗粉碎任何形式的合金块并将其细粉碎,从而获得要压实的合金粉末。 粗粉末(例如,平均粒径:10μm至500μm)通过使用喷射磨的干磨工艺进行。 \n\n [0010] 从所得磁性能的观点来看,待压实的R-Fe-B合金粉末应优选具有1.5μm至5μm的平均粒径。 除非另有说明,否则本文中粉末的“平均粒度”是指质量中值直径(MMD)。 然而,具有如此小的平均粒径的粉末的流动性和致密性(包括空腔加载能力和可压缩性)差,因此生产率差。 \n\n [0011] 为了解决上述问题,已经研究了用润滑剂涂覆合金粉末颗粒。 例如,日本公开专利公报No.08-111308及其相应的美国专利No. 美国专利第5,666,635号(受让人:住友特殊金属有限公司)公开了以下技术。 将液体形式的至少一种脂肪酯的润滑剂以0.02质量%至5.0质量%的量添加到平均粒径为10μm至500μm的R-Fe-B合金的粗粉中。 然后,使用惰性气体通过气流粉碎机将所得混合物粉碎,以制备平均粒径为1.5μm至5μm的细粉。 \n\n [0012] 润滑剂改善了粉末的流动性和致密性,并且还充当了用于赋予成型体刚性(强度)的粘合剂。 但是,润滑剂以残留的碳的形式残留在烧结体中,导致磁性降低,因此需要具有良好的去除性。 例如,日本特开2000-306753号公报公开了作为脱模性良好的润滑剂的解聚聚合物,解聚聚合物与烃系溶剂的混合物,以及解聚聚合物的混合物,  -粘度矿物油和烃基溶剂。 \n\n [0013] 使用上述润滑剂有助于一定程度的改进,但是不能赋予足够的压实性。 特别地,通过带式浇铸法制备的粉末不仅平均粒径小而且粒径分布窄,其流动性特别差。 这引起问题,使得腔中装载的粉末的量倾向于变化超过可接受的范围,并且腔中的装载密度倾向于缺乏均匀性。 结果,所得压块的质量和尺寸可能会超出可接受的范围,并且会在压块中形成碎屑和裂缝。 \n\n [0014] 作为改善R-Fe-B合金粉末的流动性和致密性的另一种方法,已尝试使用粒状粉末。 \n\n [0015] 例如,日本特开昭63-237402号公报公开了通过使用将在室温下为液态的石蜡混合物与脂肪族羧酸的混合物添加而成的造粒粉,可以提高致密性。 相对于粉末为0.4〜4.0质量%的量,捏合后造粒。 使用聚乙烯醇(PVA)作为造粒剂的方法也是已知的。 像润滑剂一样,制粒剂也起粘合剂的作用,使压坯具有强度。 \n\n [0016] 在上述日本特开昭63-237402号公报中公开的造粒剂的除去性差。 因此,在制造R-Fe-B烧结磁体的情况下,由于残留在烧结体中的碳,磁特性不利地降低。 \n\n [0017] 在使用PVA的方法中,通过使用PVA的喷雾干燥法制备的粒状粉末具有强的结合力。 所得粒状粉末太硬而不能在施加外部磁场下崩解。 因此,合金颗粒(晶体)不能在磁场中充分取向,结果,不能获得磁性能优异的各向异性磁体。 \n\n [0018] PVA的可去除性也很差。 因此,源自PVA的碳倾向于保留在所得磁体中,导致磁性能下降。 脱粘结剂可在氢气氛中进行。 然而,即使进行这种处理,也难以充分除去碳。 另外,由于PVA的过强的结合力,造粒的粉末在施加磁场的作用下不能崩解,因此难以对准。 \n\n [0019] 如上所述,尽管到目前为止已经研究了各种制粒剂,但是尚未成功开发具有中等结合力并且可除去性优异的制粒剂。 在这种情况下,尚未获得允许工业规模生产适合用于制造R-Fe-B烧结体的造粒粉末的方法。 \n\n [0020] 对具有更高性能的更小/更薄的磁体的需求已经增长。 在这种情况下,期望开发一种允许以高性能和高生产效率来生产小/薄磁体的方法。 通常,当加工R-Fe-B合金烧结体(或通过使合金烧结体磁化而获得的磁体)时,由于加工应变,加工产品的磁性能降低。 对于小磁体,磁性的这种降低是不可忽略的。 鉴于此,随着磁体的变小,更强烈地期望最终使用形状的烧结体应当以足够高的尺寸精度水平被生产以基本上不需要机械加工。 在这种情况下,对流动性和致密性优异的R-Fe-B合金粉末材料的需求也日益增加。 \n\n 发明内容 \n\n [0021] 鉴于上述问题,本发明的主要目的是提供一种流动性和致密性以及粘合剂除去性优异的R-Fe-B合金造粒粉的制造方法以及高纯度的R-Fe-B合金的造粒方法。 高品质R-Fe-B合金烧结体,生产效​​率高。 \n\n [0022] 为了达到上述目的,本发明的R-Fe-B合金造粒粉的制造方法包括以下步骤:制备R-Fe-B合金粉;和 然后,使用选自正链烷烃,异链烷烃和解聚的低聚物中的至少一种制粒剂将其制粒,制成造粒粉。 \n\n [0023] 粉末的平均粒径优选在1.5μm至5μm的范围内。 \n\n [0024] 至少一种造粒剂的平均分子量优选在120至500的范围内。 \n\n [0025] 进一步优选地,所述至少一种造粒剂是沸点在80℃至250℃范围内的正链烷烃和/或异链烷烃。 \n\n [0026] 在造粒步骤中,优选以相对于造粒粉末的质量为0.1质量%〜50质量%的量添加至少一种造粒剂。 \n\n [0027] 造粒的粉末优选通过流化床造粒工艺制备。 \n\n [0028] 造粒粉末的平均粒径优选在0.05mm至3.0mm的范围内,进一步优选在0.1mm至2.0mm的范围内。 \n\n [0029] 为了达到上述目的,本发明的R-Fe-B合金烧结体的制造方法包括以下步骤:通过所述的R-Fe-B合金造粒粉的制造方法来制造造粒粉。 以上; 在施加磁场的状态下,将包含粒状粉末的R-Fe-B合金粉末材料压制成形,以形成成型体; 并烧结成型体。 \n\n [0030] 烧结步骤是在惰性气体气氛中或真空中加热压块的步骤,并且还可以用作除去粒化剂的步骤。 \n\n [0031] 粉末材料基本上仅包括粒状粉末。 \n\n [0032] 可以对通过上述方法制造的R-Fe-B合金烧结体进行磁化,以获得磁性优异的R-Fe-B烧结磁体。 \n\n 附图说明 \n\n [0033] 图。 图1是示出本发明的R-Fe-B合金烧结体的制造方法的流程图。 \n\n [0034] 图。 图2是造粒设备的示意图。 10  用于生产本发明的R-Fe-B合金粒状粉末的粉末。 \n\n [0035] 图。 图3是表示实施例12以及比较例6、9的造粒粉的取向磁场的磁通密度与所得烧结磁铁的剩磁之间的关系的图。 \n\n 实施本发明的最佳模式 \n\n [0036] 以下,参照附图,对本发明的实施方式的R-Fe-B合金烧结体的制造方法进行说明。 在以下的实施方式中,以使用通过薄带连铸法制备的R-Fe-B合金粉末制造烧结磁铁的方法为例,对本发明的特征进行说明。 然而,本发明决不限于该具体实施方式,而是可以使用通过任何其他方法制备的R-Fe-B合金粉末。 \n\n [0037] 如图1所示。 参照图1,本发明的R-Fe-B合金烧结体的制备方法包括:步骤S 1  制备R-Fe-B合金粉末的方法; 脚步 2  用至少一种选自正构链烷烃,异链烷烃和解聚的低聚物的造粒剂对所得粉末进行制粒,以制得造粒粉末; 脚步 3  将包含粒状粉末的R-Fe-B合金粉末材料在施加磁场的状态下压紧以形成压块的方法; 和步骤S 4  烧结体的制造。 可以以已知的方式将所得的烧结体磁化以获得R-Fe-B烧结磁体。 可以在烧结后的任意时间点进行磁化。 例如,可以在使用者使用烧结磁体之前立即执行。 \n\n [0038] 从流动性的观点出发,虽然优选仅将以上述方式制备的造粒粉末用作压实的R-Fe-B合金粉末材料,但是该造粒粉末和一次颗粒粉末的混合物(预造粒材料 粉末)也可以使用。 然而,随着初级颗粒粉末的百分比的增加,流动性降低。 因此,为了充分确保通过造粒改善流动性的效果,优选仅使用造粒粉末。 在将初级颗粒粉末与造粒粉末混合的情况下,初级颗粒优选涂覆有润滑剂。 通过用润滑剂涂覆一次颗粒,可以改善R-Fe-B粉末材料的流动性,并且还可以防止R-Fe-B合金的氧化。 \n\n [0039] 注意,如本文中所使用的,不仅包括“ R-Fe-B合金粉末”而且包括制粒剂和润滑剂的待压实的粉末材料被称为“ R-Fe-B合金粉末材料”,例如 与“ R-Fe-B合金粉末”不同的是,“ R-Fe-B合金粉末”主要由仅R-Fe-B合金的粉末构成(可以包括表面上的氧化物层)。 \n\n [0040] 如上所述,通过使用正链烷烃,异链烷烃和解聚的低聚物或它们的混合物中的任一种将R-Fe-B合金粉末造粒来改善流动性和致密性。 例如,通过将平均粒径在1.5μm至5μm范围内的粉末(初级颗粒)造粒为平均粒径在0.05mm至3mm范围内的造粒粉末,流动性和致密性显着提高。 改善。 这样的粒状粉末具有适度的刚性,从而在运输和装载期间不会发生崩解。 因此,可以将预定量的粉末材料稳定且均匀地装载在腔体中。 另外,由于造粒粉末具有适度的刚性,因此在施加0.1T至0.8T的取向磁场的情况下其崩解成初级颗粒,并且初级颗粒在磁场中取向。 可以施加更高的对准磁场(例如2 T)。 另外,所得的成形体几乎没有碎屑和断裂。 \n\n [0041] 上述所有造粒剂的除去性均优异。 在诸如氩气(包括稀有气体和氮气)之类的惰性气体气氛中或在烧结过程中,可以很容易地除去它们。 因此,不会因残留碳而导致磁特性下降,而获得了磁特性优异的烧结磁铁。 \n\n [0042] 如上所述,通过使用上述造粒粉,可以高生产效率地制造磁特性优异且质量(即,装载量)变化少的R-Fe-B合金烧结体。 \n\n [0043] 将按照步骤顺序描述本发明的实施方式的R-Fe-B合金烧结体的磁体的制造方法。 \n\n [0044] 首先,通过带式铸造工艺制备R-Fe-B合金薄片(例如,参见美国专利号5,383,978)。 具体地,将通过已知方法制备的R-Fe-B合金进行高频熔融以获得熔融合金。 作为R-Fe-B合金,具有在美国专利No.5,816,641中描述的那些。 除了上述之外,还可以适当地使用美国专利4,770,723和4,792,368。 \n\n [0045] 将熔融合金保持在1350℃,然后在约1m / sec的辊圆周速度,500℃/ sec的冷却速率和200的过冷温度的条件下在单辊上快速冷却。  ,得到厚度为0.3mm的合金薄片。 然后使合金薄片吸留氢以使其变脆,从而获得粗糙的合金粉末。 将粗合金粉末用喷射磨在氮气气氛中细粉碎,以获得平均粒径为1.5μm至5μm且BET比表面积为约0.45m的合金粉末(一次颗粒)。 2 / g至约0.55 m 2 / g,例如。 合金粉末的真实密度为7.5 g / cm 3 。 \n\n [0046] 然后将获得的合金粉末造粒。 \n\n [0047] 作为造粒剂,使用选自正构烷烃,异链烷烃和解聚的低聚物中的至少一种造粒剂。 自然地,可以使用这些试剂的混合物。 优选的解聚低聚物的实例包括异丁烯和正丁烯的共聚物,异丁烯的均聚物,甲基丙烯酸烷基酯的均聚物或共聚物(例如,甲基丙烯酸甲酯,甲基丙烯酸乙酯,甲基丙烯酸丙酯,甲基丙烯酸丁酯,甲基丙烯酸异丁酯和甲基丙烯酸叔丁酯), 以及亚烷基二醇(例如,乙二醇和丙二醇)的均聚物或共聚物。 解聚的低聚物在分子中具有较多的支链结构,因此,被认为具有较高的粘度和适度的结合力。 \n\n [0048] 除了上述制粒剂之外,可以添加萜烯树脂(例如,松香,萜烯酚树脂和柠檬烯的二聚体)或脂族树脂(例如,丁烯,戊烯等的聚合物)来改进。 约束力。 这种树脂的添加量优选在0.05质量%至1.0质量%的范围内。 \n\n [0049] 上述制粒剂具有润滑性和适度的结合力,并且可除去性也优异。 造粒剂的平均分子量优选在120至500的范围内。平均分子量低于120的造粒剂的结合力较弱,难以提供稳定的造粒粉末。 平均分子量超过500的造粒剂在所得的烧结体中残留大量碳,这不利地降低了磁性。 平均分子量更优选在140至450的范围内。 \n\n [0050] 在正链烷烃和异链烷烃中,可以指定相对于沸点优选的材料。 优选沸点在80℃至250℃范围内的一种。 沸点低于80℃的一种结合力弱,难以提供稳定的粒状粉末。 沸点超过250℃的一种碳具有大量残留在所得烧结体中的碳,这不利地降低了磁性。 因此,对于正链烷烃和异链烷烃,更优选平均分子量在140至450范围内或沸点在100℃至230℃的范围内。 通过添加相对少量的这种材料,将获得足够的效果。 \n\n [0051] 自然地,在使用两种或更多种正链烷烃,异链烷烃和解聚的低聚物的混合物的情况下,各个组分应优选满足上述条件。 \n\n [0052] 相对于粉末的质量,用于制备造粒粉的造粒剂的添加量优选在0.1质量%〜50质量%的范围内。 如果造粒剂的添加量低于0.1质量%,则粉末(一次粒子)不能造粒。 如果超过50质量%,则结合力变得如此强,以至于在施加磁场下造粒粉末难以崩解。 另外,残留在所得烧结体中的碳量很大,导致磁性能下降。 造粒剂的添加量更优选为0.1质量%〜10质量%,进一步优选为0.2质量%〜10质量%。 \n\n [0053] 造粒步骤通过各种已知方法中的任何一种来执行。 例如,可以使用搅拌造粒工序,振动造粒工序,翻滚造粒工序,流化床造粒工序等。 其中,优选流化床造粒方法,其中所得的造粒粉末具有接近球形的颗粒形状并且还具有适度的刚性。 接近球形的粒状粉末的流动性和致密性优异。 如上所述,如果过高或过低,则造粒粉的刚度也可能受到造粒剂的影响,这将引起问题。 \n\n [0054] 制粒设备 10  通过流化床制粒方法制粒粉末的示意图如图1所示。  2.制粒设备 10  包括一个鼓风机 1 ,恒温器/湿度调节器 2 ,流化罐 3 ,开关阀 4  和反压鼓风机 6 。 这样的造粒设备 10 可以适当使用Fuji Paudal Co.,Ltd.的摆动处理器。 \n\n [0055] 首先,由鼓风机提供气流 1 ,在流化罐中进行正常流化 3 。 空气如图1中的实线箭头所示流动。  2在正压力下(流态化阶段)。 之后,通过切换开关阀 4 空气如图1中的虚线所示那样流动。  2带反压鼓风机 6 (压缩阶段)。 在压实阶段,形成粉末层并通过向下的气流对其进行压缩,从而提高了造粒粉末的刚度。 然后,在压实阶段形成的粉末层随着向上的气流而破裂,并且由于流化空气的磨损作用而破碎,形成为近球形的粒状粉末。 切换阀 4  可能会反复切换。 通过控制空气量和重复周期,可以调节造粒粉末的刚度。 另外,通过控制造粒步骤的持续时间,可以调节造粒粉末的平均粒径。 \n\n [0056] 造粒粉末的平均粒度优选在0.05mm至3.0mm的范围内。 通常,造粒粉末中包含的一次颗粒的量很小,并且三次或更高级颗粒的量也非常小。 因此,次级颗粒的平均粒径可以基本上视为代表造粒粉末的平均粒径。 在此,作为造粒粉的平均粒径,使用通过显微镜观察测得的二次粒子的平均粒径。 如果造粒粉末的平均粒径小于0.05mm,则改善流动性的效果小。 因此,难以获得致密的密度均匀。 如果造粒粉末的平均粒度超过3mm,则难以将粉末均匀地填充在腔中。 因此,难以获得具有足够密度的均匀压块。 造粒粉末的平均粒径更优选在0.1mm至2.0mm的范围内。 \n\n [0057] 然后将所得粒状粉末压实以产生压块。 在此,假设仅使用粒状粉末来制造成形体。 可以使用任何已知的压机设备进行压实。 通常,使用单轴压机,其中通过上下冲头将模腔(模孔)中的粉末压实。 用高度气密的容器每批运输造粒的粉末,该容器中充入或流动有氮气。 \n\n [0058] 将造粒的粉末装载到单轴压机的模腔中。 该装载可以通过使用筛子的方法或使用日本专利公开号59-40560,日本专利公开号10-58198,日本专利申请公开中描述的使用供料箱的任何方法来实现。 公开号为63-110521的模型和公开号为2000-248301的日本待审专利(在某些情况下,由于使用重力下落,这些方法统称为“下落法”)。 \n\n [0059] 特别地,在生产小的压块的情况下,优选使用腔来计量粒状粉末以对应于容量的体积。 例如,在将粒状粉末装载到空腔中的过程中,可以通过在该空腔上方往复运动的给料箱的杆构件将粒状粉末从空腔中拉平。 通过这种装载方式,可以比较均匀地装载预定量的粒状粉末。 \n\n [0060] 一旦将粒状粉末装入腔体中,就降低单轴压机的上冲头,并在封闭腔体的开口后施加磁场,以使粒状粉末既分解为初级颗粒,又分解为初级颗粒 在磁场中对齐。 具有适度刚性的本发明的造粒粉末在0.1T至0.8T的相对弱的磁场下崩解。然而,为了确保足够的取向度,期望0.5T至1.5T的磁场。 在垂直于压实方向的方向上施加磁场。 在以这种方式施加磁场的情况下,粉末材料通过例如上冲头和下冲头在例如98MPa的压力下被单轴压实。 结果,获得具有0.5至0.7的相对密度(=压坯的密度/真密度)的压坯。 如果合适的话,磁场的方向可以平行于压实方向。 静磁场或脉冲磁场可以用作对准磁场。 \n\n [0061] 然后例如在真空中或在惰性气体气氛中(优选压缩)在约1000℃至约1180℃的温度下将获得的压块烧结约1-6小时。 在该烧结过程中,基本上除去了可除去性极好的本发明的造粒剂。 也就是说,烧结步骤可以用作脱粘结剂步骤。 或者,可以在烧结步骤之前单独提供脱粘结剂步骤。 例如,脱粘合剂步骤可以在压缩的惰性气体气氛中,在约2Pa的压力下,在约200℃至约800℃的温度下进行约三至六小时。 \n\n [0062] 将得到的烧结体在例如约450℃〜约800℃的温度下进行例如约1〜8小时的时效处理,从而得到R-Fe-B系烧结磁铁。  R-Fe-B烧结磁体最终在随后的任意阶段通过磁化完成。 \n\n [0063] 根据本发明,如上所述,通过使用流动性和密实性优异的造粒粉,能够以减少的装填量不均一的方式将其均匀地装填到型腔内。 因此,通过压实获得的压坯的质量和尺寸的变化很小。 而且,在压坯中较少形成碎屑和裂缝。 另外,抑制了如果造粒剂残留在烧结体中可能发生的磁性能下降。 因此,可以获得磁性优异的烧结磁体。 以这种方式,根据本发明,可以以高生产效率来生产高质量的R-Fe-B合金烧结磁体。 \n\n 例子 \n\n [0064] 在下文中,将描述本发明的示例。 \n\n [0065] 以下列方式制备R-Fe-B合金粉末。 使用纯度为99.9%的电解铁,含有19.8%的B的铁硼合金,以及纯度为99.7%以上的Nd和Dy作为原料来制备熔融合金。 对获得的熔融合金进行带坯铸造工艺,以获得组成为14.5at。的R-Fe-B合金薄片。 钕的百分比,0.5 at。  Dy的百分比,为78.8at。 铁的百分比和6.2 at。  B.%的薄片在惰性气体气氛(例如N 2  用喷射研磨机在气体压力为58.8 MPa的条件下,将其制成平均粒径为3μm的细粉。 \n\n [0066] 通过流化床造粒法(例如,使用来自Fuji Paudal Co.,Ltd。的回转处理器)生产粒状粉末。 各种造粒剂用于造粒。 实施例1〜16中用于制造造粒粉的造粒剂的组成和量示于表1和表2。比较例1〜9中用于制造造粒粉的造粒剂的组成示于表3。 比较例6、7和8中,使用PVA作为造粒剂的造粒是通过喷雾干燥机进行的。 在比较例9中,不进行造粒,而直接使用微粉。 \n\n [0067] 通过使用上述给料箱的方法将获得的造粒粉末装载到长20mm×宽15mm×深10mm的腔中,然后单轴压实(在施加取向磁场(0.8的条件下在98MPa的压力下)。  T)垂直于压实方向)。 在整个实施例和比较例中,这些加载步骤和压实步骤在相同条件下进行。 \n\n [0068] 将所得的成形体在Ar气氛中在1060℃下烧结约4小时,然后在600℃下进行1小时熟化,从而获得烧结体。 然后将烧结体在2387kA / m下磁化以获得烧结磁体。 对于每个实施例和比较例,总共生产了50个样品。 \n\n [0069] 压实步骤之后的工艺步骤在整个实施例1至15和对比例1至9中基本相同,除了在对比例6、7和8中在氢气气氛中于1060℃在4小时下进行烧结。 其中PVA用作制粒剂。 原因是在Ar气氛中通过烧结不能充分除去PVA。 \n\n [0070] 以上述方式制造实施例和比较例中的烧结磁体。 在上述生产过程中,评估了以下项目。 \n\n [0071] 评估造粒能力,以确定是否通过上述方法成功制造了造粒粉末,以及在运输和装载过程中获得的造粒粉末是否崩解。 评价结果示于表1和表2中,其中将满足所有这些点的粒状粉末给予◯,尽管存在一些问题,将Δ赋予具有实用性的粒状粉末,将具有低实用性的粒状粉末给予X。 实用性。 \n\n [0072] 根据残留在烧结体中的碳量和烧结磁体的磁性能来评价可除去性。 评价结果示于表1和表2中,其中○表示由于烧结体中残留有碳而导致磁性能劣化小的粒状粉末,△表示具有实用性的粒状粉末,尽管磁性能劣化为△。  X为实用性低的粒状粉末,由于烧结体中残留有碳,因此显示出磁性能显着降低,因此X被忽略不计。 \n\n [0073] 对于实施例12以及比较例6和9中的造粒粉,评价了成形体质量的变化(%)和负载量的变化(σ)。 由{(最大质量-最小质量)/平均质量(n = 50)}×100(%)计算压块的质量变化。 加载量的变化(σ)表示50个压块质量分布的标准偏差。 结果示于表4。 \n\n [0074] 对于实施例12以及比较例6和9中的粒状粉末,还评价了磁场取向性,其中,将在压实步骤中施加的取向磁场的磁通密度从0.1T改变为0.4T,并且 0.8 T,并评价所得烧结磁体的磁性能(剩磁Br和内聚力iHc)。 评价结果示于表4和图5。 图3 图3是通过在x轴上绘制取向磁场的磁通密度和在y轴上绘制所得烧结体的剩磁的曲线图。 关于其他实施例和比较例,将取向磁场的磁通密度设定为0.8T,所得烧结体的磁性能的评价结果​​示于表5、6和7。 \n\n [0075] \n\n   表格1  组成  造粒  代理人  (分子  重量)/  质量% Ex. 1 Ex. 2 Ex. 3 Ex. 4 Ex. 5 Ex. 6 Ex. 7 Ex. 8  正常 100 100 90 — — — 95 —  石蜡(140)  正常 — — 10 — — — — —  石蜡(300)  异链烷烃 — — — 100 90 90 — —  (140)  异链烷烃 — — — — 10 10 5 —  (300)  聚丁烯 — — — — — — — 100  (200)  聚丁烯 — — — — — — — —  (300)  聚丁烯 — — — — — — — —  (500)  加额 10.0 5.0 1.0 5.0 0.5 3.0 1.0 3.0  (质量%)  制粒 ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯  能力  可移动性 ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ \n\n [0076] \n\n    表2  组成  造粒  代理人  (分子  重量)/ Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex.  质量% 9 10 11 12 13 14 15 16  正常 50 — — 30 30 30 30 30  石蜡(140)  正常 — — — — — — — —  石蜡(300)  异链烷烃 — 95 95 65 65 65 65 65  (140)  异链烷烃 — — — — — — — —  (300)  聚丁烯 50 — — — — — — —  (200)  聚丁烯 — — — 5 5 5 5 5  (300)  聚丁烯 — 5 5 — — — — —  (500)  添加 3.0 1.0 7.0 2.0 10.0 30.0 50.0 65.0  量  (质量%)  制粒 ◯ ◯ ◯ ◯ ◯ ◯ ◯ Δ  能力  可移动性 ◯ ◯ ◯ ◯ ◯ ◯ ◯ Δ \n\n [0077] \n\n    表3  组成  造粒  代理人  (分子  重量)/ 通讯 通讯 通讯 通讯 通讯 通讯 通讯 通讯 通讯  质量% Ex. 1 Ex. 2 Ex. 3 Ex. 4 Ex. 5 Ex. 6 Ex. 7 Ex. 8 Ex. 9  正己烷(86) 100 90 50 90 — — — — —  聚丁烯(650) — 10 50 — 3 — — — —  聚丁烯(1000) — — — 10 — — — — —  液体石蜡 — — — — 97 — — — —  聚乙烯基 — — — — — 100 100 100 —  酒精(PVA)  加额 2.0 5.0 5.0 2.0 2.0 2.0 5.0 10.0 0.0  (质量%)  制粒 X ◯ ◯ ◯ ◯ ◯ ◯ ◯ X  能力  可移动性 ◯ X X X X X X X ◯ \n\n [0078] \n\n    表4  例子12 比较例 9 比较例 6  对齐 0.1 0.4 0.8 0.1 0.4 0.8 0.1 0.4 0.8  磁性  场(T)  溴(T) 1.20 1.26 1.34 1.21 1.26 1.35 0.60 0.85 1.22  iHc(kA / m) 1261 1185 1139 1240 1200 1135 1250 1211 1145  变化 5.4 14.6 4.6  的质量  紧凑型(%)  变化 0.18 0.33 0.16  加载(σ) \n\n [0079] \n\n    表5  项目 Ex. 1 Ex. 2 Ex. 3 Ex. 4 Ex. 5 Ex. 6 Ex. 7 Ex. 8  溴(T) 1.34 1.35 1.34 1.34 1.35 1.34 1.34 1.34  iHc(kA / m) 1135 1142 1140 1149 1133 1145 1151 1153 \n\n [0080] \n\n    表6  项目 Ex. 9 Ex. 10 Ex. 11 Ex. 12 Ex. 13 Ex. 14 Ex. 15 Ex. 16  溴(T) 1.34 1.34 1.34 1.34 1.34 1.34 1.34 1.30  iHc(kA / m) 1148 1140 1154 1139 1144 1146 1151 1121 \n\n [0081] \n\n    表7  项目 Com.Ex.  1个 Com.Ex.  6 Com.Ex.  9  溴(T) 1.35 1.22 1.35  iHc(kA / m)  1138 1145 1135 \n\n [0082] 将描述表1、2和3中所示的结果。 发现在实施例1至16中显示出适当的造粒能力,其使用正构烷烃(平均分子量:140,沸点:170℃),正构烷烃(平均分子量:300,沸点:315℃)  ),异链烷烃(平均分子量:140,沸点:166℃),异链烷烃(平均分子量:300,沸点:277℃),作为异丁烯和正丁烯的共聚物的聚丁烯(平均分子量)。 相对于合金粉末为0.5质量%〜65质量%的添加量,作为造粒剂的聚丁烯(平均分子量:300)和/或聚丁烯(平均分子量:500)(表1、2)。  )。 \n\n [0083] 相反,在其中以2.0质量%的量添加正己烷(分子量:86,沸点69℃)作为造粒剂的比较例1中,稳定的造粒粉末的制备失败(表3)  。 在没有添加造粒剂的比较例9中,造粒粉末的制备也失败了。 使用聚丁烯(分子量:650),聚丁烯(分子量:1000),液体石蜡(烷基环烷烃的混合物作为主要成分,沸点:300℃),在比较例2至8中显示出良好的造粒能力。 相对于合金粉末为2.0质量%〜10质量%的添加量和/或PVA作为造粒剂。 然而,在这些比较例中,可去除性差并且磁性能显着降低。 特别地,比较例2、3、4、5、7和8的可移除性显着差,结果不能提供烧结体。 因此,表7未包含这些比较例的评价结果​​。 使用添加量为2.0质量%的PVA的比较例6的剩磁Br低。 \n\n [0084] 作为各种造粒剂的检查结果,发现造粒剂的平均分子量优选在120至500的范围内,更优选在140至450的范围内。如果平均分子量过大 如果粒径小,则结合力弱,因此难以提供稳定的造粒粉末。 相反,如果平均分子量过大,则残留在烧结体中的碳量很大,导致磁性能下降。 在正链烷烃和异链烷烃中,可以指定相对于沸点优选的材料。 优选沸点在80℃至250℃范围内的一种。 因此,对于正构链烷烃和异链烷烃,进一步优选平均分子量在140至450范围内或沸点在100℃至230℃范围内的链烷烃和异链烷烃。 通过添加相对少量的这种材料,将获得足够的效果。 \n\n [0085] 检查制粒剂的添加量的优选范围。 在表1和表2所示的实施例1〜16中,由于造粒剂的结合力过强,因此在造粒磁场中,以65质量%的比例添加了造粒剂的造粒粉未充分崩解。 另外,在上述Ar气氛中的烧结过程中,粘合剂(即,造粒剂)没有被充分除去。 由于这些原因,推测其磁性能低于实施例1至15中的磁性能。作为各种检查的结果,发现造粒剂的添加量应优选在0.1质量%至50.0的范围内。 质量%以制备具有适度刚性的粒状粉末,该粉末具有在运输和装载期间抗崩解但在取向磁场下允许崩解的能力。 造粒剂的添加量更优选在0.2质量%〜10质量%的范围内,进一步优选在0.5质量%〜5质量%的范围内。 \n\n [0086] 本发明的造粒粉末具有优异的流动性和适度的刚性。 将参考表4和图6对此进行说明。  3。 \n\n [0087] 从表4可以明显看出,实施例12中压块的质量变化为5.4%,与不造粒的比较例9中的14.6%相比有显着改善。 这也适用于负载量的变化(σ)。 实施例12中的负载量的变化(σ)为0.18,与比较例9中的0.33相比显示出显着的改善。这表明通过造粒改善了流动性。 \n\n [0088] 自然地,造粒还改善了可压实性。 与比较例9相比,所得成形体中的碎屑和破裂的百分比显着较低。在其他实施例中也观察到了造粒的效果。 \n\n [0089] 从表4所示的结果还发现,通过比较例6中使用PVA作为造粒剂的造粒,改善了流动性和致密性。 但是,如上所述,比较例6中的造粒粉的结合力过强,这从取向磁场的强度与所得烧结体的磁特性之间的关系也可以看出。 \n\n [0090] 如表4和图6所示,在表1中示出了与图1相同的符号。 由图3可知,实施例12的剩磁Br与使用非造粒粉末的比较例9大致相同,可知在取向磁场的磁通密度为0.1T,0.4T的情况下,粉末为0.3T。 另外,比较例6的剩磁Br随着取向磁场的磁通密度的降低而显着降低。 原因是,虽然实施例12中的造粒粉末在0.1T以上的取向磁场下大致完全崩解为一次颗粒,但是比较例6中的造粒粉末即使在0.8T的取向磁场下也不能充分崩解。 在较弱的磁场下,崩解的颗粒状粉末的百分比显着降低。 \n\n 工业适用性 \n\n [0091] 根据本发明,使用可除去性优异的造粒剂来制造刚性适中的造粒粉。 因此,通过使用本发明的造粒粉,可以高生产率地制造磁特性优异的R-Fe-B合金烧结磁铁。');
INSERT INTO `os_patent_instruction_text` VALUES (12924, 22753, 'BACKGROUND OF THE INVENTION\n\n[0001]1. Field of the Invention\n\n[0002]The present invention relates to a rare earth alloy sintered compact for use in, for example, an R—Fe—B based sintered magnet and a method of making such a sintered compact.\n\n[0003]2. Description of the Related Art\n\n[0004]A rare earth alloy sintered magnet (permanent magnet) is normally produced by compacting a powder of a rare earth alloy, sintering the resultant compact and then subjecting the sintered compact to an aging treatment. Permanent magnets currently used extensively in various fields of applications include a samarium-cobalt (Sm—Co) based magnet and a neodymium-iron-boron (Nd—Fe—B) based magnet. Among other things, an R—Fe—B based magnet (where R is at least one element selected from the rare earth elements including yttrium (Y) and is typically neodymium (Nd), Fe is iron and B is boron) is used more and more often in various types of electronic appliances. This is because an R—Fe—B based magnet exhibits a maximum energy product (BH)max that is higher than any of various other types of magnets and yet is relatively inexpensive.\n\n[0005]An R—Fe—B based sintered magnet includes a main phase consisting essentially of a tetragonal R2Fe14B compound, an R-rich phase including Nd, for example, and a B-rich phase. In an R—Fe—B based sintered magnet, a portion of Fe may be replaced with a transition metal element such as Co or Ni and a portion of B may be replaced with C. An R—Fe—B based sintered magnet, to which various preferred embodiments of the present invention are applicable, is described in U.S. Pat. Nos. 4,770,723 and 4,792,368, for example.\n\n[0006]In the prior art, an R—Fe—B based alloy has been prepared as a material for such a magnet by an ingot casting process. In an ingot casting process, normally, rare earth metal, electrolytic iron and ferroboron alloy as respective start materials are melted by an induction heating process, and then the melt obtained in this manner is cooled relatively slowly in a casting mold, thereby preparing an alloy ingot.\n\n[0007]Recently, a rapid cooling process such as a strip casting process or a centrifugal casting process has attracted much attention in the art. In a rapid cooling process, a molten alloy is brought into contact with, and relatively rapidly cooled and solidified by, the outer or inner surface of a single chill roller or a twin chill roller, a rotating chill disk or a rotating cylindrical casting mold, thereby making a rapidly solidified alloy, thinner than an alloy ingot, from the molten alloy. The rapidly solidified alloy prepared in this manner will be herein referred to as an “alloy flake”. The alloy flake produced by such a rapid cooling process normally has a thickness of about 0.03 mm to about 10 mm. According to the rapid cooling process, the molten alloy starts to be solidified from a surface thereof that has been in contact with the surface of the chill roller. That surface of the molten alloy will be herein referred to as a “roller contact surface”. Thus, in the rapid cooling process, columnar crystals grow in the thickness direction from the roller contact surface. As a result, the rapidly solidified alloy, made by a strip casting process or any other rapid cooling process, has a structure including an R2Fe14B crystalline phase and an R-rich phase. The R2Fe14B crystalline phase usually has a minor-axis size of about 0.1 μm to about 100 μm and a major-axis size of about 5 μm to about 500 μm. On the other hand, the R-rich phase, which is a non-magnetic phase including a rare earth element R at a relatively high concentration, is dispersed in the grain boundary between the R2Fe14B crystalline phases.\n\n[0008]Compared to an alloy made by the conventional ingot casting process or die casting process (such an alloy will be herein referred to as an “ingot alloy”), the rapidly solidified alloy has been cooled and solidified in a shorter time (i.e., at a cooling rate of about 102° C./sec to about 104° C./sec). Accordingly, the rapidly solidified alloy has a finer structure and a smaller average crystal grain size. In addition, in the rapidly solidified alloy, the grain boundary thereof has a greater area and the R-rich phase is dispersed broadly and thinly in the grain boundary. Thus, the rapidly solidified alloy also excels in the dispersiveness of the R-rich phase. Because the rapidly solidified alloy has the above-described advantageous features, a magnet with excellent magnetic properties can be made from the rapidly solidified alloy.\n\n[0009]An alternative alloy preparation method called “Ca reduction process (or reduction diffusion process)” is also known in the art. This process includes the processing and manufacturing steps of: adding metal calcium (Ca) and calcium chloride (CaCl) to either the mixture of at least one rare earth oxide, iron powder, pure boron powder and at least one of ferroboron powder and boron oxide at a predetermined ratio or a mixture including an alloy powder or mixed oxide of these constituent elements at a predetermined ratio; subjecting the resultant mixture to a reduction diffusion treatment within an inert atmosphere; diluting the reactant obtained to make a slurry; and then treating the slurry with water. In this manner, a solid of an R—Fe—B based alloy can be obtained.\n\n[0010]It should be noted that any block of a solid alloy will be herein referred to as an “alloy block”. The “alloy block” may be any of various forms of solid alloys that include not only solidified alloys obtained by cooling a melt of a material alloy either slowly or rapidly (e.g., an alloy ingot prepared by the conventional ingot casting process or an alloy flake prepared by a rapid cooling process such as a strip casting process) but also a solid alloy obtained by the Ca reduction process.\n\n[0011]An alloy powder to be compacted is obtained by performing the processing and manufacturing steps of: coarsely pulverizing an alloy block in any of these forms by a hydrogen pulverization process, for example, and/or any of various mechanical grinding processes (e.g., using a ball mill or attritor); and finely pulverizing the resultant coarsely pulverized powder (with a mean particle size of about 10 μm to about 500 μm) by a dry pulverization process using a jet mill, for example. The alloy powder to be compacted preferably has a mean particle size of about 1.5 μm to about 7 μm to achieve sufficient magnetic properties. It should be noted that the “mean particle size” of a powder herein refers to a mass median diameter (MMD) unless stated otherwise.\n\n[0012]An R—Fe—B based alloy powder is easily oxidizable, which is disadvantageous. A method of forming a thin oxide film on the surface of a rare earth alloy powder to avoid this problem was disclosed in Japanese Patent Gazette for Opposition No. 6-6728, which was originally filed by Sumitomo Special Metals Co., Ltd. on Jul. 24, 1986.\n\n[0013]According to another known method, the surface of a rare earth alloy powder may also be coated with a lubricant for that purpose. It should be noted that a rare earth alloy powder with no oxide film or lubricant coating thereon, a rare earth alloy powder covered with an oxide film and a rare earth alloy powder coated with a lubricant will all be referred to as a “rare earth alloy powder” collectively for the sake of simplicity. However, when the “composition of a rare earth alloy powder” is in question, the composition is that of the rare earth alloy powder itself, not the combination of the powder and the oxide film or lubricant coating.\n\n[0014]An R—Fe—B based sintered magnet produced by any of the methods described above does exhibit excellent magnetic properties. However, compared to a ferrite magnet, for example, a higher magnetizing field is needed to produce the R—Fe—B based sintered magnet. For example, when a motor including an R—Fe—B based sintered magnet is formed, a rare earth alloy sintered compact may be embedded in a portion of the motor and then magnetized by using a coil of the motor, for example (see Japanese Laid-Open Publication No. 11-113225, for example). In that situation, it is sometimes difficult to apply a magnetizing field with a sufficiently high strength to the sintered compact. An insufficiently magnetized magnet will exhibit inferior magnetic properties. Among other things, the remanence Br thereof may decrease considerably. In addition, such a magnet is easily demagnetized by heat, for example.\n\n[0015]For example, Kanekiyo et al. described in Journal of Magnetics Society of Japan, Vol. 16, pp. 143–146 (1992) that the magnetization characteristic of an R—Fe—B based sintered magnet can be improved by adding Mo, V or Co to its material alloy.\n\n[0016]Also, Japanese Laid-Open Publication No. 6-96928 discloses that the coercivity of an R—Fe—B based sintered magnet can be increased, and the demagnetization thereof can be decreased, by substituting Dy and/or Tb for a portion of Nd near the surface of an Nd2Fe14B intermetallic compound as a main phase.\n\n[0017]However, the present inventors discovered and confirmed via experiments that other magnetic properties (the remanence Br, in particular) of the conventional magnets still decreased even when any of the above-described elements was added or substituted. Also, even if those other magnetic properties do not deteriorate, it is difficult to mass-produce the magnets because the elements to be added or substituted are rare and expensive.\n\n[0018]In addition, it is known that if the average grain size of crystal grains that makes up a rare earth alloy sintered compact is decreased, the resultant magnet will exhibit increased coercivity. However, once the average crystal grain size is decreased, the magnetization characteristic of the sintered compact will deteriorate disadvantageously. Furthermore, once the particle size of the powder to be sintered is decreased, the powder becomes less easy to handle and shows a lower degree of orientation (i.e., degree of crystallographic orientation) during the compaction process.\n\nSUMMARY OF THE INVENTION\n\n[0019]In order to overcome the problems described above, preferred embodiments of the present invention provide an R—Fe—B based rare earth alloy sintered compact that is sufficiently magnetizable upon the application of a lower magnetizing field, and a method of making such a sintered compact.\n\n[0020]A preferred embodiment of the present invention provides a method of making a rare earth alloy sintered compact that preferably includes a main phase having a composition represented by the general formula: (LR1-xHRx)2T14A, where T is either Fe alone or a mixture of Fe and at least one transition metal element other than Fe, A is either boron alone or a mixture of boron and carbon, LR is at least one light rare earth element, HR is at least one heavy rare earth element and 01-uHRu)2T14A (where 0≦u1-vHRv)2T14A (where x1-xHRx)2T14A, thereby obtaining a mixed powder to be sintered, and (c) sintering the mixed powder to be sintered.\n\n[0021]In one preferred embodiment of the present invention, the step (a) preferably includes the step of preparing a third rare earth alloy material including a main phase having a composition represented by (LR1-wHRw)2T14A (where u[0022]In another preferred embodiment, the step (a) preferably includes the step of preparing the multiple types of rare earth alloy materials that each include: about 25 mass % to about 40 mass % of rare earth element R (where R=LR1-xHRx); about 0.6 mass % to about 1.6 mass % of A; and T, a very small amount of additive and inevitably contained impurities as the balance.\n\n[0023]In still another preferred embodiment, the step (a) preferably includes the step of preparing the multiple types of rare earth alloy materials so that each of the rare earth alloy materials has an R mole fraction which is different from an average R mole fraction of the rare earth alloy materials by an amount that is no greater than about 20%.\n\n[0024]In yet another preferred embodiment, the step (b) preferably includes the step of obtaining the mixed powder to be sintered that includes about 30 mass % or more of a rare earth alloy material having an HR mole fraction lower than an average HR mole fraction of the multiple types of rare earth alloy materials.\n\n[0025]In yet another preferred embodiment, the step (a) preferably includes the step of preparing the first rare earth alloy material that includes a main phase having a composition substantially represented by (LR)2T14A.\n\n[0026]In this particular preferred embodiment, the step (b) preferably includes the step of obtaining the mixed powder to be sintered that includes about 30 mass % or more of the first rare earth alloy material.\n\n[0027]More preferably, the step (b) includes the step of obtaining the mixed powder to be sintered that includes about 50 mass % or more of the first rare earth alloy material.\n\n[0028]In yet another preferred embodiment, the step (a) preferably includes the step of preparing the multiple types of rare earth alloy materials by a rapid cooling process such as a strip casting process.\n\n[0029]In yet another preferred embodiment, the step (b) preferably includes the step of obtaining the mixed powder to be sintered that has a mean particle size of about 1.5 μm to about 7.0 μm.\n\n[0030]In yet another preferred embodiment, the step (c) preferably includes the step of sintering the mixed powder at least twice at substantially different sintering temperatures.\n\n[0031]A rare earth alloy sintered compact according to a preferred embodiment of the present invention preferably includes a main phase that has an average composition represented by the general formula: (LR1-xHRx)2T14A, where T is either Fe alone or a mixture of Fe and at least one transition metal element other than Fe, A is either boron alone or a mixture of boron and carbon, LR is at least one light rare earth element, HR is at least one heavy rare earth element and 01-pHRp)2T14A (where 0≦p1-qHRq)2T14A (where x[0032]In one preferred embodiment of the present invention, the main phases of the first and second types are preferably randomly dispersed in each said crystal grain.\n\n[0033]In another preferred embodiment of the present invention, each of the crystal grains preferably further includes a third main phase that has an HR mole fraction that is higher than that of the main phases of the first type but lower than that of the main phases of the second type.\n\n[0034]In still another preferred embodiment, the crystal grains preferably have an average grain size of about 1.5 μm to about 20 μm.\n\n[0035]In yet another preferred embodiment, the main phases of the first type preferably have a composition substantially represented by (LR)2T14A.\n\n[0036]A rare earth alloy sintered compact according to another preferred embodiment of the present invention is preferably made by the method according to any of the preferred embodiments described above.\n\n[0037]A rare earth sintered magnet according to a preferred embodiment of the present invention is preferably produced by magnetizing the rare earth alloy sintered compact according to any of the preferred embodiments described above.\n\n[0038]In one preferred embodiment of the present invention, the rare earth alloy sintered compact has preferably been magnetized by applying a magnetic field having a strength of about 1.6 MA/m to about 1.9 MA/m.\n\n[0039]Other features, elements, processes, steps, characteristics and advantages of the present invention will become more apparent from the following detailed description of preferred embodiments of the present invention with reference to the attached drawings.\n\nBRIEF DESCRIPTION OF THE DRAWINGS\n\n[0040]FIG. 1 is a graph showing how the magnetization characteristics of sintered compacts representing comparative examples (in which rare earth elements are dispersed uniformly) depend on the amount of Dy added.\n\n[0041]FIG. 2 is a graph showing the magnetization characteristics of sintered compacts representing specific examples of preferred embodiments of the present invention (in which rare earth elements are dispersed non-uniformly).\n\n[0042]FIGS. 3A and 3B are EPMA photographs respectively showing the concentration profiles of Nd and Dy in the sintered magnet representing Comparative Example No. 3 (5Dy).\n\n[0043]FIGS. 4A and 4B are EPMA photographs respectively showing the concentration profiles of Nd and Dy in the sintered magnet representing Example No. 1 (0 Dy+10 Dy).\n\n[0044]FIG. 5 is an EPMA photograph showing a back-scattered electron image of the sintered magnet that represents Example No. 1 (0Dy+10Dy) shown in FIGS. 4A and 4B and indicating Dy-rich and Dy-poor phases by black and white dashed circles, respectively.\n\n[0045]FIG. 6 is a polarizing microscope photograph showing a cross section of a sintered compact representing a specific example of the present invention.\n\n[0046]FIG. 7 is an EPMA photograph showing a back-scattered electron image of the sintered compact representing the specific example of the present invention.\n\n[0047]FIG. 8A is an EPMA photograph showing the La ray intensity distribution of Nd; and\n\n[0048]FIG. 8B is an EPMA photograph showing the concentration profile of Nd that was obtained by scanning the sintered compact with an electron beam along the two lines in the photograph.\n\n[0049]FIG. 9A is an EPMA photograph showing the La ray intensity distribution of Dy; and\n\n[0050]FIG. 9B is an EPMA photograph showing the concentration profile of Dy that was obtained by scanning the sintered compact with an electron beam along the two lines in the photograph.\n\n[0051]FIG. 10 schematically illustrates the microcrystalline structure of the sintered compact representing a specific example of preferred embodiments of the present invention.\n\nDETAILED DESCRIPTION OF PREFERRED EMBODIMENTS\n\n[0052]Hereinafter, preferred embodiments of a rare earth alloy sintered compact, a sintered magnet obtained by magnetizing the sintered compact and methods of making the sintered compact and the sintered magnet according to the present invention will be described with reference to the accompanying drawings.\n\n[0053]An R—Fe—B based alloy sintered compact according to a preferred embodiment of the present invention includes a main phase having a composition represented by the general formula (LR1-xHRx)2T14A, where T is either Fe alone or a mixture of Fe and at least one transition metal element other than Fe; A is either boron alone or a mixture of boron and carbon; LR is at least one light rare earth element; and HR is at least one heavy rare earth element. LR and HR will be herein labeled as “R” collectively.\n\n[0054]The light rare earth element LR is preferably selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu and Gd and preferably includes at least one of Nd and Pr. The heavy rare earth element HR is preferably selected from the group consisting of Y, Tb, Dy, Ho, Er, Tm, Yb and Lu and preferably includes at least one element selected from the group consisting of Dy, Ho and Tb. Examples of the transition metal elements include Ti, V, Cr, Mn, Fe, Co and Ni. T is preferably either Fe alone or Fe that has been partially replaced with at least one of Ni and Co.\n\n[0055]According to a preferred embodiment of the present invention, the magnetization characteristic is improved by substituting HR (which is preferably at least one element selected from the group consisting of Dy, Ho and Tb) for a portion of LR (which is preferably at least one element selected from the group consisting of Nd and Pr) to be included in R of a rare earth sintered magnet that will include a main phase represented by R2Fe14B. Thus, the main phase of the rare earth alloy sintered compact according to the preferred embodiment of the present invention preferably has a composition satisfying the inequality of 0[0056]Generally speaking, the magnetic properties of a rare earth sintered magnet depend heavily on not only its composition but also its microcrystalline structure (i.e., the construction or size of its phase or crystal structure). This microcrystalline structure in turn varies greatly with the composition and manufacturing method. Thus, the present inventors carried out experiments to determine how the microcrystalline structure and magnetic properties of a rare earth alloy sintered compact change with the specific type of manufacturing method adopted.\n\n[0057]The results of the experiments conducted by the present inventors revealed that the magnetization characteristic of a rare earth alloy sintered compact including a main phase having a composition represented by the general formula described above and a relatively high HR mole fraction was superior to that of a rare earth alloy sintered compact including a main phase with no HR (i.e., x=0) but that other magnetic properties (the remanence Br, in particular) thereof were inferior. That is to say, the present inventors discovered and confirmed via the experiments that as the HR mole fraction of a material alloy powder having a composition represented by (LR1-xHRx)2T14A (where 0r thereof decreased.\n\n[0058]However, when the present inventors performed the processing and manufacturing steps of: preparing multiple types of rare earth alloy materials including respective main phases having mutually different HR mole fractions; obtaining a mixed powder to be sintered by mixing those rare earth alloy materials with each other so that the resultant sintered compact includes a main phase having an average composition represented by (LR1-xHRx)2T14A; and compacting and sintering the mixed powder, the resultant rare earth alloy sintered compact exhibited a magnetization characteristic better than the sintered compact having a main phase that is entirely represented by (LR1-xHRx)2T14A. In this case, the multiple types of rare earth alloy materials included first and second rare earth alloy materials. The first rare earth alloy material included a main phase having a composition represented by (LR1-uHRu)2T14A (where 0≦u1-vHRv)2T14A (where x1-xHRx)2T14A. In other words, according to this preferred embodiment of the inventive manufacturing method, a magnetization characteristic at substantially the same level is achievable with the amount of HR reduced. Eventually, the unwanted deterioration of the magnetic properties, which would otherwise be caused when the HR mole fraction is increased, is suppressible according to preferred embodiment of the present invention.\n\n[0059]If a rare earth element R, including LR and HR, is included at respective mole fractions R1 and R2 (in atomic percentages) in the first and second rare earth alloy materials, ΔR=|R1−R2| is preferably about 20% or less of (R1+R2)/2. The reason is as follows. Specifically, if the R mole fractions of the first and second rare earth alloy materials are different from each other by more than about 20% of the average R mole fraction, then the variation in R mole fraction will easily reach a non-negligible level during the manufacturing process. When three or more types of rare earth alloy materials having mutually different HR mole fractions are used, the R mole fraction of each of these materials is preferably different from their average R mole fraction by no greater than about 20%.\n\n[0060]Furthermore, as the R mole fraction of a rare earth alloy increases, normally the temperature at which the rare earth alloy exhibits a transition into its liquid phase tends to decrease. Thus, if ΔR exceeds about 20%, then a plurality of rare earth alloy materials, turning into their liquid phases at substantially different temperatures, coexist in the same mixture. In that case, a sintered compact having the desired microcrystalline structure, in which HR-rich and HR-poor main phases are dispersed non-uniformly in a single crystal grain, cannot be obtained. As a result, improvement of the magnetization characteristic might be insufficient. Particularly when a rare earth alloy material having a relatively high HR mole fraction has an excessively high R mole fraction, the H-rich main phase will become a continuous phase. That is to say, the microcrystalline structure in which the HR-rich and HR-poor main phases are dispersed non-uniformly cannot be obtained or an abnormal grain growth is brought about. As a result, the magnetization characteristic cannot be improved as effectively. Accordingly, the R mole fraction of a rare earth alloy material having a relatively high HR mole fraction is preferably set lower than that of a rare earth alloy material having a relatively low HR mole fraction.\n\n[0061]Also, to obtain the desired microcrystalline structure in which multiple HR-poor main phases and multiple HR-rich main phases are dispersed non-uniformly in a single crystal grain, a mixed powder to be sintered, including about 30 mass % or more of a rare earth alloy material having an HR mole fraction lower than the average HR mole fraction of the multiple rare earth alloy materials, is preferably used. However, the mixed powder should not include the rare earth alloy material having a relatively low HR mole fraction at more than about 80 mass %. This is because the number of crystal grains including no HR-rich main phases will increase too much in that unwanted situation.\n\n[0062]In the general formula (LR1-xHRx)2T14A, the mole fraction x is preferably about 0.05 to about 0.75. The reason is as follows. Specifically, if x is less than about 0.05, the expected improvement of the magnetization characteristic might be insufficient. However, if x exceeds about 0.75, the magnetic properties might deteriorate considerably. On the other hand, in the general formula (LR1-vHRv)2T14A representing the main phase of the HR-rich material, v is preferably about 0.75 or less. This is because if v was greater than about 0.75, an abnormal structure might be formed and the magnetic properties might deteriorate significantly. It should be noted that to achieve good enough magnetic properties, the multiple types of rare earth alloy materials including respective main phases with mutually different HR mole fractions each preferably includes: about 25 mass % to about 40 mass % of rare earth element R (where R=LR1-xHRx); about 0.6 mass % to about 1.6 mass % of A; and T, a very small amount of additive and inevitably contained impurities as the balance. The very small amount of additive is preferably at least one element selected from the group consisting of Al, Cu, Ga, Cr, Mo, V, Nb and Mn. The total amount of the additive(s) is preferably about 1 mass % or less.\n\n[0063]The present inventors analyzed the microcrystalline structure of the resultant rare earth alloy sintered compact in detail with an electron microscope and an electron probe micro analyzer (EPMA). As a result, the present inventors confirmed that multiple types of main phases with those different HR mole fractions were dispersed in the sintered compact obtained by the method of this preferred embodiment. Thus, the present inventors confirmed that the sintered compact included a main phase having a composition represented by (LR1-pHRp)2T14A (where 0≦p1-qHRq)2T14A (where x[0064]Furthermore, the present inventors compared the effects achieved by various compositions with each other. As a result, the present inventors discovered that the greater the difference in HR mole fraction between the main phases in the sintered compact, the better the magnetization characteristic. That is to say, a material including a main phase having a composition substantially represented by (LR)2T14A (i.e., a material that includes substantially no HR but may include a very small amount of HR as an impurity) is preferably used as the HR-poor material. When such a material including substantially no HR is used as the HR-poor material, the HR-rich material may include HR at a relatively high mole fraction. Thus, the difference in HR mole fraction between the main phases in the sintered compact can be increased. Furthermore, the material including substantially no HR is preferably included at about 30 mass % or more, and more preferably at about 50 mass % or more, in the mixed powder to be sintered.\n\n[0065]It is possible not to use that material including substantially no HR. As an alternative, the material including substantially no HR and a rare earth alloy material including a main phase having a composition represented by (LR1-wHRw)2T14A (where u[0066]Next, it will be described generally how to compound n (where n>2) types of rare earth alloy materials having mutually different HR mole fractions with each other. Suppose the HR mole fractions in the n types of alloy materials (which are each given as a mass percentage ratio by dividing the mass percentage of HR by the total mass percentage of LR and HR) are identified by HR1, HR2, HR3, . . . , and HRn, the HR mole fraction in the alloy material with the desired composition is identified by HRx and the respective mass percentages of the n types of alloy materials are identified by W1, W2, W3, . . . , and Wn. In that case, the respective rare earth alloy materials should be mixed so that the HR mole fractions and the mass percentages satisfy the following Equation (1):\n\nHR1·W1+HR2·W2+HR3·W3 . . . +HRn·Wn=HRx  (1)\n\n[0067]In this case, if a rare earth alloy material including substantially no HR (i.e., HR1=0) is used as the HR-poor material, then a rare earth alloy material having a high HR mole fraction, which will improve the magnetization characteristic greatly, may be used as the HR-rich material. As a result, a rare earth alloy sintered compact, in which the HR mole fractions of the main phases are significantly different from each other, can be obtained. To use a rare earth alloy material having an even higher HR mole fraction and/or to use an even greater amount of rare earth alloy material having a high HR mole fraction, the rare earth alloy material including substantially no HR is preferably included at about 30 mass % or more, and more preferably about 50 mass % or more, in the mixed powder.\n\n[0068]Each of the alloy materials for use to make the rare earth alloy sintered compact according to preferred embodiments of the present invention may be prepared by the known method described above. However, to improve the magnetic properties thereof as much as possible, an alloy flake made by a rapid cooling process such as a strip casting process is preferably used. See U.S. Pat. No. 5,666,635, for example.\n\n[0069]When the alloy materials including respective main phases having mutually different HR mole fractions are weighed and mixed, those alloy materials may be in the form of alloy flakes, alloy powders prepared by coarsely pulverizing the alloy flakes or alloy powders obtained by finely pulverizing the coarsely pulverized alloy powders. In the last two cases, the coarsely pulverized powders preferably have a mean particle size of about 10 μm to about 500 μm. To prevent the alloy materials from being oxidized, however, the alloy materials to be weighed and mixed are preferably the alloy flakes or coarsely pulverized alloy powders rather than the finely pulverized alloy powders. Accordingly, the mixing and pulverizing steps may be performed at the same time. Naturally, the respective rare earth alloy materials in the form of alloy flakes, coarsely pulverized powders or finely pulverized powders are preferably subjected to a composition analysis before their mixing ratio is determined.\n\n[0070]The mixed alloy powder to be finally compacted preferably has a mean particle size of about 1 μm to about 10 μm, more preferably from about 1.5 μm to about 7 μm. If necessary, the surface of the mixed alloy powder may be coated with a lubricant to prevent the powder from being oxidized and/or to increase the flowability or compactability thereof. Optionally, the mixed alloy powder may be granulated to increase the flowability or compactability thereof.\n\n[0071]The mixed alloy powder may be pressed and compacted using motorized presses at a compacting pressure of about 0.2 ton/cm2 to about 2.0 ton/cm2 (i.e., from about 1.96×104 kPa to about 1.96×105 kPa) while being oriented under a magnetic field of about 0.2 MA/m to about 4 MA/m. Next, the resultant compact is sintered at a temperature of about 1,000° C. to about 1,100° C. for approximately 1 hour to approximately 5 hours either within an inert gas (e.g., rare gas or nitrogen gas) atmosphere or within a vacuum. The sintered compact obtained is then subjected to an aging treatment at a temperature of about 450° C. to about 8', '发明背景\n\n[0001]1.发明领域\n\n[0002]本发明涉及一种用于例如R-Fe-B基烧结磁体的稀土合金烧结体,以及制造这种烧结体的方法。\n\n[0003]2.相关技术的描述\n\n[0004]通常通过压实稀土合金的粉末,烧结所得紧凑的粉末,然后使烧结的紧凑件进行老化处理来生产稀土合金烧结磁体(永磁体)。目前在各种应用领域广泛使用的永磁体包括钐 - 钴(SM-CO)基磁体和基于钕 - 铁 - 硼(Nd-Fe-B)的磁体。在其他情况下,R-Fe-B基磁体(其中R是选自稀土元素的至少一个元素,包括钇(Y),通常是钕(Nd),Fe是铁,B是硼)更多更常见于各种类型的电子设备。这是因为R-Fe-B基磁铁表现出最大的能量产品(BH)max 这高于各种其他类型的磁体,但却相对便宜。\n\n[0005]R-Fe-B基烧结磁体包括基本上由四方R构成的主阶段2Fe.14B化合物,富含R的相,包括Nd,例如富含B的相。在基于R-Fe-B的烧结磁体中,可以用诸如CO或Ni的过渡金属元件代替Fe的一部分,并且B的一部分可以用C. R-Fe-B基烧结磁体代替适用于本发明的各种优选实施例,在美国专利No.例如,4,770,723和4,792,368。\n\n[0006]在现有技术中,通过铸锭浇铸方法制备R-Fe-B基合金作为这种磁体的材料。在铸锭铸造过程中,通常,稀土金属,电解铁和硼钨酮合金作为各自的起始材料被感应加热过程熔化,然后以这种方式获得的熔体在铸造模具中相对缓慢地冷却,从而制备合金锭。\n\n[0007]最近,诸如条带铸造工艺或离心铸造过程的快速冷却过程引起了本领域的许多关注。在快速冷却过程中,通过单个冷却辊或双冷却辊,旋转冷却盘或旋转圆柱铸造模具接触,熔融合金,熔融合金,熔融合金和相对快速地冷却和固化,旋转冷却盘或旋转圆柱铸造模具,由此从熔融合金中制备快速凝固的合金,比合金锭更薄。以这种方式制备的快速凝固的合金在此将被称为“合金薄片”。通过这种快速冷却过程产生的合金薄片通常具有约0.03mm至约10mm的厚度。根据快速冷却过程,熔融合金开始从已经与冷却辊的表面接触的表面固化。熔融合金的表面将在此称为“滚子接触表面”。因此,在快速冷却过程中,柱状晶体从辊接触​​表面沿厚度方向生长。结果,快速凝固的合金,由条带铸造工艺或任何其他快速冷却过程制成,具有包括R的结构2Fe.14B结晶相和富含R相。 r.2Fe.14B结晶相通常具有约0.1μm至约100μm的次轴尺寸,并且主轴尺寸为约5μm至约500μm。另一方面,作为包括稀土元素R以相对高浓度的非磁相的R富型相分散在R之间的晶界中。2Fe.14b结晶相。\n\n[0008]与传统的铸锭铸造工艺或压铸过程制成的合金相比(这种合金在本文中称为“铸造合金”),在较短的时间内被冷却并固化了快速凝固的合金(即,在a冷却速度约为102°C./sec到大约104°C./sec)。因此,快速凝固的合金具有更细的结构和较小的平均晶粒尺寸。另外,在快速凝固的合金中,其晶界具有更大的区域,并且R-富相位在晶界中宽且薄薄地分散。因此,快速凝固的合金也擅长R-富相的分散性。因为快速凝固的合金具有上述有利特征,所以可以由具有优异磁性的磁体由快速凝固的合金制成。\n\n[0009]替代合金制备方法,称为“Ca还原过程(或还原扩散过程)”也是本领域已知的。该方法包括:将金属钙(Ca)和氯化钙(CaCl)添加到至少一种稀土氧化物,铁粉,纯硼粉末和氧化硼至少一种的混合物中的加工和制造步骤以预定的比例或混合物,包括这些组成元素的合金粉末或这些组成元素的混合氧化物以预定的比率;使所得混合物在惰性气氛中进行减少扩散处理;稀释所得制备浆料的反应物;然后用水处理浆液。以这种方式,可以获得R-Fe-B基合金的固体。\n\n[0010]应该注意的是,固体合金的任何块将被称为“合金块”。 “合金块”可以是各种形式的固体合金中的任何一种,其不仅包括通过冷却或迅速地冷却材料合金(例如,由常规铸锭铸造工艺或合金薄片制备的合金铸锭而获得的凝固合金通过快速冷却过程制备,例如条带铸造工艺,但也是通过Ca还原过程获得的固体合金。\n\n[0011]通过进行处理和制造步骤来获得待压制的合金粉末:例如通过氢粉碎过程(例如,使用A的任何各种机械研磨方法中的任何一种,粗糙地粉碎合金块球磨机或托特);通过使用喷射磨机,通过干粉碎方法将所得粗粉碎的粉末(平均粒度为约10μm至约500μm的平均粒度为约10μm至约500μm)。待压制的合金粉末优选具有约1.5μm至约7μm的平均粒度,以获得足够的磁性。应当注意,本文粉末的“平均粒子尺寸”是指质量中值直径(MMD),除非另有说明。\n\n[0012]R-Fe-B基合金粉末容易氧化,这是不利的。在稀土合金粉末表面上形成薄氧化物膜以避免该问题的日本专利宪报公开了对6-6728号的日本专利公报,其最初由Jul上的Sumitomo特殊金属有限公司提起。24,986。\n\n[0013]根据另一种已知的方法,稀土合金粉末的表面也可以用润滑剂涂覆润滑剂。应当注意,稀土合金粉末在没有氧化物薄膜或润滑剂涂层上,覆盖着涂有氧化膜的稀土合金粉末和涂有润滑剂的稀土合金粉末将全部称为“稀土合金”粉末“为了简单起见。然而,当“稀土合金粉末的组成”是有问题的,该组合物是稀土合金粉末本身的组合物,而不是粉末和氧化膜或润滑剂涂层的组合。\n\n[0014]通过上述任何方法生产的R-Fe-B基烧结磁体确实表现出优异的磁性。然而,与铁氧体磁体相比,例如,需要更高的磁化场来生产基于RF-B基烧结磁体。例如,当形成包括R-Fe-B基烧结磁体的电动机时,稀土合金烧结体可以嵌入电动机的一部分中,然后通过使用电动机的线圈磁化,例如(参见日本例如,公开发布No.11-113225)。在这种情况下,有时难以施加磁化领域,其具有足够高的强度的烧结结构。不充分的磁化磁铁将表现出较差的磁性。除此之外,剩余br 它可能会显着降低。另外,例如,这种磁铁容易被热量释放。\n\n[0015]例如,Kanekiyo等人。在日本磁性学会杂志中描述,Vol。如图16所示,PP。143-146(1992)通过将Mo,V或Co加入其材料合金,可以提高R-Fe-B基烧结磁体的磁化特性。\n\n[0016]此外,日本公开公开No.6-96928公开了可以增加R-Fe-B基烧结磁体的矫顽力,并且可以通过代替ND的一部分的Dy和/或Tb来降低其去磁靠近一个nd的表面2Fe.14B金属间化合物作为主阶段。\n\n[0017]然而,本发明人通过其他磁性(剩余B)来发现和确认r特别地,即使添加或取代任何上述元素,常规磁体也仍然降低。而且,即使那些其他磁性不劣化,难以大量生产磁体,因为待加入或被替代的元素是稀有且昂贵的。\n\n[0018]另外,众所周知,如果弥补稀土合金烧结体的晶粒的平均晶粒尺寸降低,所得磁体将表现出增加的矫顽力。然而,一旦平均晶粒尺寸减小,烧结体的磁化特性将不利地恶化。此外,一旦待烧结的粉末的粒度降低,粉末在压实过程中变得越来越容易处理并且显示出较低程度的取向程度(即晶形取向程度)。\n\n发明概述\n\n[0019]为了克服上述问题,本发明的优选实施方案提供了一种基于R-Fe-B基础稀土合金烧结体,其在施加下磁化场时足够磁化,以及制造这种烧结压缩的方法。\n\n[0020]本发明的一个优选实施方案提供了制备稀土合金烧结体的方法,其优选包括具有由通式表示的组合物的主相:(LR1-x人力资源x的)2T.14A,其中T是单独的Fe或Fe的混合物和除Fe以外的至少一种过渡金属元素,A是单独的硼或硼和碳的混合物,LR是至少一个轻稀土元素,HR是在至少一个重稀土元素和0 1-u人力资源u的)2T.14a(其中0≤u1-v人力资源v的)2T.14a(其中x 1-x人力资源x的)2T.14A,从而获得待烧结的混合粉末,(c)烧结混合粉末烧结。\n\n[0021]在本发明的一个优选实施方案中,步骤(a)优选包括制备第三稀土合金材料的步骤,包括具有由(LR的组合物的主相1-w人力资源w的)2T.14一个(你在哪里[0022]在另一个优选的实施方案中,步骤(a)优选包括制备多种稀土合金材料的步骤,每个稀土合金材料包括:约25质量%至约40质量%的稀土元素R(其中R = LR1-x人力资源x);约0.6质量%至约1.6质量%;和T,非常少量的添加剂和不可避免地含有杂质作为平衡。\n\n[0023]在又一个优选的实施方案中,步骤(a)优选包括制备多种类型的稀土合金材料的步骤,使得每个稀土合金材料具有R摩尔分数,其与平均R摩尔分数不同稀土合金材料的量不大于约20%。\n\n[0024]在又一个优选的实施方案中,步骤(b)优选包括获得待烧结的混合粉末的步骤,其包括约30质量%或更多的稀土合金材料,其具有低于平均HR摩尔分数的HR摩尔分数多种稀土合金材料。\n\n[0025]在又一个优选的实施方案中,步骤(a)优选包括制备第一稀土合金材料的步骤,该步骤包括具有基本上表示的组合物的主阶段(LR)2T.14一种。\n\n[0026]在该特定优选的实施方案中,步骤(b)优选包括获得待烧结的混合粉末的步骤,其包括约30质量%或更多的第一稀土合金材料。\n\n[0027]更优选地,步骤(b)包括获得待烧结的混合粉末的步骤,其包括约50质量%或更多的第一稀土合金材料。\n\n[0028]在又一个优选的实施方案中,步骤(a)优选包括通过快速冷却过程制备多种稀土合金材料的步骤,例如条带铸造工艺。\n\n[0029]在又一个优选的实施方案中,步骤(b)优选包括获得待烧结的混合粉末的步骤,其平均粒径为约1.5μm至约7.0μm。\n\n[0030]在又一个优选的实施方案中,步骤(c)优选包括在基本上不同的烧结温度下至少两次烧结混合粉末的步骤。\n\n[0031]根据本发明优选实施方案的稀土合金烧结体优选包括具有由通式表示的平均组成的主阶段:(LR1-x人力资源x的)2T.14A,其中T是单独的Fe或Fe的混合物和除Fe以外的至少一种过渡金属元素,A是单独的硼或硼和碳的混合物,LR是至少一个轻稀土元素,HR是在至少一个重稀土元素和0 1-p人力资源p的)2T.14a(其中0≤p1-q人力资源q的)2T.14一个(其中x [0032]在本发明的一个优选实施方案中,第一和第二类型的主相优选在每个所述晶粒中随机分散。\n\n[0033]在本发明的另一个优选实施方案中,每个晶粒优选地还包括第三主相,所述第三主阶段具有高于第一类型的主要相的HR摩尔级分,但低于主阶段的主要阶段第二种类型。\n\n[0034]在另一个优选的实施方案中,晶粒的平均晶粒尺寸优选为约1.5μm至约20μm。\n\n[0035]在又一个优选的实施方案中,第一类的主要相优选具有基本上表示的组合物(LR)2T.14一种。\n\n[0036]根据本发明另一个优选实施方案的稀土合金烧结体是优选通过根据上述任何优选实施方案的方法进行的。\n\n[0037]根据本发明优选实施方案的稀土烧结磁体优选通过根据上述任何优选实施方案磁化稀土合金烧结体。\n\n[0038]在本发明的一个优选实施例中,稀土合金烧结体优选通过施加强度为约1.6mA / m至约1.9mA / m的磁场而磁化。\n\n[0039]根据附图的附图,本发明的其他特征,元件,工艺,步骤,特征和优点将变得更加明显。\n\n附图的简要说明\n\n[0040]图附图说明图1是表示代表比较例(其中均匀地分散的稀土元素)的烧结块的磁化特性如何取决于添加的量。\n\n[0041]图图2是表示表示本发明优选实施方案的具体实例的烧结体的磁化特性的图(其中稀土元素不均匀地分散)。\n\n[0042]图。图3A和3B是分别表示表示比较例3(50)的烧结磁体中Nd和Dy的浓度谱的EPMA照片。\n\n[0043]图。图4A和4B分别是表示表示实施例1(0 DY +1​​0μD)的烧结磁体中Nd和Dy的浓度谱的EPMA照片。\n\n[0044]图图5是表示烧结磁体的背散射​​电子图像的EPMA照片,其表示图1和2中所示的实施例1(0dy + 10Dy)。图4A和4B分别表示通过黑白虚线圆圈的富含富含较差的阶段。\n\n[0045]图图6是表示表示本发明的具体实例的烧结体的横截面的偏振显微镜照片。\n\n[0046]图图7是表示表示本发明具体实施例的烧结体的背散射​​电子图像的EPMA照片。\n\n[0047]图图8A是显示ND的La Ray强度分布的EPMA照片;和\n\n[0048]图图8B是显示通过沿着照片中的两条线扫描具有电子束而通过扫描烧结体而获得的ND的浓度曲线的EPMA照片。\n\n[0049]图图9A是显示DY的LA RAY强度分布的EPMA照片;和\n\n[0050]图图9B是显示通过沿着照片中的两条线扫描烧结体而通过用电子束扫描烧结体而获得的Dy的浓度曲线的EPMA照片。\n\n[0051]图图10示意性地示出了表示本发明优选实施例的具体实例的烧结体的微晶结构。\n\n优选实施方案的详细描述\n\n[0052]在下文中,将参考附图描述通过磁化烧结的紧凑件获得的烧结磁体的稀土合金烧结体的优选实施方案,将参考附图描述根据本发明的烧结体和制造烧结体和烧结磁体。\n\n[0053]根据本发明优选实施方案的R-Fe-B基合金烧结体包括具有由通式表示的组合物(LR1-x人力资源x的)2T.14a,其中t是单独的Fe或Fe的Fe和至少一个过渡金属元素的混合物; A是单独的硼或硼和碳的混合物; LR是至少一个轻稀土元素; HR至少是一个重稀土元素。 LR和HR将在此标记为“R”。\n\n[0054]光稀土元素LR优选选自La,Ce,Pr,Nd,PM,Sm,Eu和Gd,优选包括Nd和Pr中的至少一个。重稀土元素HR优选选自Y,Tb,Dy,HO,ER,Tm,Yb和Lu,优选包括选自Dy,Ho和Tb的至少一种元素。过渡金属元素的实例包括Ti,V,Cr,Mn,Fe,Co和Ni。 T是单独的Fe或已被Ni和Co.的至少一种部分替换的Fe。\n\n[0055]根据本发明的优选实施方案,通过代替HR(其优选地至少一个元素,所述磁化特性改善了LR的一部分(优选为至少一个)选自Nd和Pr)的元素包括在稀土烧结磁体中的r中,该磁铁将包括由r表示的主阶段2Fe.14B.因此,根据本发明优选实施方案的稀土合金烧结体的主相优选具有满足0 [0056]一般而言,稀土烧结磁体的磁性不仅依赖于其组合物,而且依赖于其微晶结构(即其相或晶体结构的结构或尺寸)。这种微晶结构又与组合物和制造方法变化很大。因此,本发明人进行了实验以确定稀土合金的微晶结构和磁性如何与采用的特定类型的制造方法进行紧凑的变化。\n\n[0057]本发明人进行的实验结果表明,稀土合金烧结体的磁化特性包括具有上述通式表示的组合物的主相和相对高的HR摩尔级分优于稀有的组合物地球合金烧结体,包括没有HR的主相(即,X = 0),但其他磁性(剩余Br特别是其较差。也就是说,本发明人通过实验发现和证实,作为具有由(LR的组合物的材料合金粉末的HR摩尔级分)(LR1-x人力资源x的)2T.14(其中0 r 其降低。\n\n[0058]然而,当本发明人进行加工和制造步骤时:制备多种类型的稀土合金材料,包括具有相互不同的HR摩尔级分的各个主要相;通过将那些稀土合金材料彼此混合,获得混合粉末,使得所得烧结体包括具有由(LR的平均组成的主阶段(LR1-x人力资源x的)2T.14一种;并压实和烧结混合粉末,所得稀土合金烧结体具有比具有完全由(LR1-x人力资源x的)2T.14答:在这种情况下,多种类型的稀土合金材料包括第一和第二稀土合金材料。第一稀土合金材料包括具有由(LR的组合物的主相1-u人力资源u的)2T.14一个(其中0≤u1-v人力资源v的)2T.14a(其中x 1-x人力资源x的)2T.14答:换句话说,根据本发明的制造方法的这个优选实施例,可以实现基本相同的水平的磁化特性,其数量降低。最终,根据本发明的优选实施方案,当HR摩尔分数增加时,将导致磁性的不希望的磁性劣化,否则会抑制。\n\n[0059]如果在第一和第二稀土合金材料中的各自的摩尔级分R1和R 2(以原子百分比)上包括稀土元素R,包括LR和HR,则ΔR= | R1-R2 |优选约20%或更少(R1 + R2)/ 2。原因如下。具体地,如果第一和第二稀土合金材料的R摩尔级分彼此不同,则彼此的平均R摩尔分数的约20%不同,则R摩尔分数的变化将容易地达到不可忽略的水平制造过程。当使用具有相互不同的HR摩尔级分的三种或更多种类型的稀土合金材料时,这些材料中的每一种的R摩尔级分优选不同于其平均R摩尔分数不大于约20%。\n\n[0060]此外,随着稀土合金的R摩尔分数增加,通常稀土合金在其液相中表现出过渡的温度趋于降低。因此,如果ΔR超过约20%,则多个稀土合金材料,在基本上不同的温度下转入它们的液相,在相同的混合物中共同。在这种情况下,不能获得具有所需微晶结构的烧结体,其中HR富含HR和HR差的主要相在单晶晶中不均匀地分散。结果,对磁化特性的改进可能不足。特别是当具有相对高的HR摩尔级分具有过高的R摩尔级分的稀土合金材料时,H-富含H-的主阶段将成为连续相。也就是说,不能获得富含HR的HR和HR差的主要相的微晶结构不能均匀地分散或产生异常晶粒生长。结果,磁化特性不能有效地改善。因此,具有相对高的HR摩尔级分的稀土合金材料的R摩尔分数优选地设定得低于具有相对低的HR摩尔级分的稀土合金材料的摩尔级。\n\n[0061]此外,为了获得所需的微晶结构,其中多个HR差的主要相和多个HR的主要相在单晶晶中不均匀地分散,待烧结的混合粉末,包括约30质量%或更多的a优选使用具有低于多重稀土合金材料的平均HR摩尔分数的HR摩尔级分的稀土合金材料。然而,混合粉末不应包括稀土合金材料,其具有相对低的HR摩尔级分,大于约80质量%。这是因为包括没有人力资源的主要阶段的晶粒的数量会在不需要的情况下增加太多。\n\n[0062]在通式(LR1-x人力资源x的)2T.14A,摩尔分数X优选为约0.05至约0.75。原因如下。具体地,如果X小于约0.05,则磁化特性的预期改善可能不足。然而,如果x超过约0.75,则磁性可能会显着恶化。另一方面,在通式中(LR1-v人力资源v的)2T.14A代表富含HR的材料的主阶段,V优选为约0.75或更小。这是因为如果V大于约0.75,则可能形成异常结构,并且磁性可能会显着恶化。应该注意的是,为了实现足够良好的磁性,多种类型的稀土合金材料,包括相互不同的HR摩尔级分,各自优选包括:约25质量%至约40质量%的稀土元素R(其中r = lr.1-x人力资源x);约0.6质量%至约1.6质量%;和T,非常少量的添加剂和不可避免地含有杂质作为平衡。非常少量的添加剂优选为选自Al,Cu,Ga,Cr,Mo,V,Nb和Mn的至少一种元素。添加剂的总量优选为约1质量%以下。\n\n[0063]本发明人用电子显微镜和电子探针微分析仪(EPMA)分析了所得稀土合金烧结紧凑的微晶结构。结果,本发明人证实,通过该优选实施方案的方法获得的烧结体分散在烧结体中的多种主要相。因此,本发明人证实烧结体包括具有由(LR的组合物的主阶段1-p人力资源p的)2T.14(其中0≤p1-q人力资源q的)2T.14一个(其中x [0064]此外,本发明人比较了各种组合物彼此实现的效果。结果,本发明人发现,烧结体中主相之间的HR摩尔分数差异越大,磁化特性越好。也就是说,包括具有基本上表示的组合物的主阶段的材料(LR)2T.14A(即,包括基本上没有HR但可以包括杂质的非常少量的HR的材料,作为HR差的材料。当包括基本上没有HR的这种材料用作HR差的材料时,HR富含物质可以包括相对高摩尔级分的HR。因此,可以增加烧结体中的主相之间的HR摩尔分数的差异。此外,在混合粉末中,包括基本上没有HR的材料优选包括在约30质量%以上,更优选为约50质量%以上。\n\n[0065]可以不使用包括基本上没有人力资源的材料。作为替代方案,包括基本上没有HR和稀土合金材料的材料,包括具有由(LR的组合物的主阶段)(LR1-w人力资源w的)2T.14A(其中U [0066]接下来,通常将描述如何用彼此相互不同的HR摩尔级分的稀土合金材料进行化合物N(其中N> 2)类型。假设N型合金材料中的HR摩尔级分(每个通过将Hr的质量百分比除以LR和HR的总质量百分比)来鉴定为LR和HR的总质量百分比)1,人力儿2,人力儿3。 。 。 ,人力资源n,通过HR鉴定具有所需组合物的合金材料中的HR摩尔级分x 和N种合金材料的相应质量百分比由W鉴定1,W.2,W.3。 。 。和W.n。在这种情况下,应混合各自的稀土合金材料,使得HR摩尔级分和质量百分比满足以下等式(1):\n\n人力资源1·W.1+小时2·W.2+小时3·W.3 。 。 。 +小时n·W.n=小时x(1)\n\n[0067]在这种情况下,如果稀土合金材料,包括基本上没有HR(即HR1= 0)用作HR差的材料,然后是具有高HR摩尔级分的稀土合金材料,这将大大提高磁化特性,可以用作富有的HR材料。结果,可以获得一种稀土合金烧结结构,其中主要相的HR摩尔级分彼此显着不同。为了使用具有甚至更高的HR摩尔级分的稀土合金材料和/或使用具有高HR摩尔级分的稀土合金材料的甚至更大的稀土合金材料,稀土合金材料,包括基本上没有HR的稀土合金材料优选包括约30在混合粉末中,质量%或更高,更优选约50质量%以上。\n\n[0068]用于制备根据本发明优选实施方案的稀土合金烧结体的每种合金材料可以通过上述已知方法制备。然而,为了尽可能地改善其磁性,优选使用通过快速冷却过程所制造的诸如条带铸造工艺的合金薄片。见美国专利No.。例如,美国专利号5,666,635。\n\n[0069]当将包括具有相互不同的HR摩尔级分的相应主要相的合金材料称重并混合时,那些合金材料可以是合金薄片的形式,通过通过细细粉碎粗粉碎而获得的合金薄片或合金粉末制备的合金粉末合金粉末。在最后两种情况下,粗粉碎的粉末优选具有约10μm至约500μm的平均粒度。然而,为了防止合金材料被氧化,因此待称量和混合的合金材料优选是合金薄片或粗粉碎的合金粉末而不是细粉碎的合金粉末。因此,可以同时进行混合和粉碎步骤。当然,优选在测定它们的混合比之前进行合金薄片形式的相应稀土合金材料,粗粉碎的粉末或细细粉碎的粉末在其混合比之前进行组成分析。\n\n[0070]最终压实的混合合金粉末优选具有约1μm至约10μm的平均粒度,更优选为约1.5μm至约7μm。如果需要,可以用润滑剂涂覆混合合金粉末的表面,以防止粉末被氧化和/或增加其流动性或其紧凑性。任选地,混合合金粉末可以造粒以增加其流动性或其紧凑性。\n\n[0071]可以使用电动压力机在约0.2吨/厘米的压力下压制和压实混合合金粉末2 约2.0吨/厘米2 (即,约1.96×104 KPA至约1.96×105 KPA)在约0.2mA / m至约4mA / m的磁场下定向。接下来,将所得块在约1,000℃至约1,100℃的温度下烧结约1小时至约5小时,或者在惰性气体(例如,稀有气体或氮气)气氛中或真空内。然后在约450℃至约800℃的温度下获得所得烧结的紧凑型在约450℃至约800℃的温度下约1小时至约8小时。以这种方式,获得R-Fe-B基合金烧结体。\n\n[0072]任选地,在将绿色块在约1,000℃的温度下烧结至约1,000℃之前,可以在约800℃至约900℃的温度下预烧结在约900℃的温度下约1在惰性气体(例如,稀有气体或氮气)气氛中或真空内的小时至约4小时。通过在各自的烧结温度下进行多个烧结工艺步骤,其彼此不同约100℃至约200℃,可以防止HR的主阶段过度扩散。结果,可以有效地形成所需的微晶结构,其中富含HR的和HR差的主相是不均匀分散的。此外,在这种情况下抑制了晶粒的异常生长。结果,可以有利地形成烧结体,包括平均晶粒尺寸为约1.5μm至约20μm的晶粒,以表现出优异的磁性。特别优选通过熔化并将粉末的初级颗粒与待烧结的粉末的初级颗粒组合(具有约1.5μm的平均粒度为约1.5μm至约1.5μm的初级颗粒,形成包括平均晶粒尺寸至约17μm的晶粒的烧结体。 7μm)在烧结过程中为基本单个晶体。\n\n[0073]而且,为了减少包含在烧结体中的碳的量,从而改善其磁性,覆盖合金粉末表面的润滑剂可以在烧结绿色块之前加热和蒸发。该润滑剂加热和汽化步骤的条件可以随着润滑剂的类型而变化。例如,该处理步骤可以在约100℃至约800℃的温度下进行约3小时至大约6小时的减压气氛。\n\n[0074]通过磁化所得烧结体,完成烧结磁体。该磁化处理步骤可以在烧结处理步骤完成之后在任意时间点执行。例如,磁化步骤有时在烧结的结构嵌入诸如电动机的装置之后进行。在这种情况下,烧结体可以通过使用电动机的线圈磁化,例如,如日本公开公开No.11-113225中所公开的。然而,由于装置施加的一些结构约束,磁化场的强度可以限制。通常,需要约2 mA / m或更高的磁化区域来磁化r2Fe.14B基于B的稀土烧结紧凑。为了完全磁化烧结压缩,通常需要约2.5mA / m或更高的磁化区域。\n\n[0075]本发明的优选实施方案提供了一种稀土合金烧结体,其在施加下磁化场时实现约98%或更多的磁化百分比(其强度随磁体的操作点而变化但约为5%比常规的一个约20%,例如约1.6mA / m至约1.9 mA / m)和制造这种烧结结构的方法。\n\n例子\n\n[0076]在下文中,将通过说明性实施例描述根据本发明优选实施方案的稀土合金烧结体和用于制造烧结磁体的方法。然而,应该注意,本发明决不限于以下具体实施例。\n\n[0077]五种类型的稀土合金粉末,每种碱性组合物,其基本组合物包括约32.1质量%的Nd和Pr,约1.0质量%的B,约0.9质量%的Co,约0.2质量%,约0.1质量%制备Cu和Fe,不可避免地含有杂质作为平衡,并且其中代替Nd和Pr(即,示例性LRS)的一部分被取代的Dy(即,示例性HR)。在这五种类型的稀土合金粉末中,Dy分别包括约0质量%,约2.5质量%,约5质量%,约7质量%,约10质量%。基于这些Dy质量百分比,这些稀土合金粉末将在此鉴定为0dy,2.50,50,7ds和10dy。\n\n[0078]为了获得这五种类型的稀土合金粉末,首先,通过条带铸造方法制备具有相互不同的摩尔级分的各自组合物的合金薄片,然后通过氢粉碎过程粗略地粉碎。以这种方式,获得粗粉碎的合金粉末。接下来,在氮气气氛中使用喷射磨削液体粉碎这些粗粉碎的合金粉末,从而获得平均粒径为约4.0μm的合金粉末。在该具体实施例中,称量具有相互不同的摩尔级分的合金材料并在细粉碎步骤中混合。或者,如上所述,这些合金材料也可以称重和混合在合金薄片或粗地粉碎粉末的形式中。\n\n[0079]在该具体实例中,将待烧结的混合粉末,其中将0〜10ds混合在一种比例中,并将其烧结的另一个混合粉末,其中0dy,50和10ds以1-1个的比例混合准备好两种样品。为了方便起见,这些样品将被称为实施例1和2。\n\n[0080]接下来,将这些混合粉末压制并压实在约0.8吨/厘米的压实压力下2 (相当于约7.84×104 KPA)在约0.96mA / m的取向磁场下施加约0.96mA / m(相当于约1.2吨),从而获得垂直尺寸为约40mm的绿色压块,水平尺寸为约30mm,高度为约20mm。取向磁场垂直施加(即,垂直于压实方向)。随后,在减压AR气氛中,这些绿色块在约1,050℃下烧结约4小时,然后将烧结体在约500℃下进行老化处理约1小时。此后,将这些烧结体加工成测试样品,尺寸为约5.4mm×约12mm×约12mm。接下来,使用脉冲磁化器,搜索线圈和浮动计,在施加约0mA / m至约2.5mA / m的磁化区域下评价烧结体的磁性。最后在约3.2mA / m的磁化场(相当于约4℃)的磁化区域最终磁化这些烧结体。\n\n[0081]此外,通过单独进行0〜2.50,50,70和10ds(即,分别表示比较例1至5,分别)作为实施例1和2的方法,产生五个烧结磁体。\n\n[0082]下表1显示了在待烧结的稀土合金粉末上进行的成分分析结果,所述实施例1和2和比较例1至5:\n\n[0083]\n\n  表格1 nd +. 作品 Prdy BCO. AlCU. Comp。10dy. 32.1 0.0 1.0 0.90 0.2 0.1 Comp。22.5dy. 29.5 2.5 1.0 0.92 0.2 0.1 Comp。3.50. 26.9 5.0 1.0 0.90 0.2 0.1 Comp。4.7ds. 25.1 7.0 1.0 0.90 0.2 0.1 Comp。5.10d 22.0 10.0 1.0 0.91 0.2 0.1 前任。10dy:10dy = 1:1 27.0 5.01 1.0 0.90 0.2 0.1 前任。20dy:5dy:10dy = 1:1:1 27.0 5.03 1.0 0.90 0.2 0.1\n\n[0084]而且,所获得的烧结体的磁化特性示于图1和2中。如图1和2所示,虽然所得烧结磁体的磁性如下表2所示:\n\n[0085]\n\n  表2.  Br HCB(BH)max HCJ 作品 (T)(ka / m)(kj / m3的)(ka / m) Comp。10dy. 1.40 1016 375 1034 Comp。22.5dy. 1.32 1012 336 1379 Comp。3.50. 1.26 971 305 1758 Comp。4.7ds. 1.20 929 278 2070 Comp。5.10d 1.13 876 247 2507 前任。10dy:10dy = 1:1 1.27 983 313 1760 前任。20dy:5dy:10dy = 1:1:1 1.27 980 310 1756\n\n[0086]从图2所示的结果清楚地看出。如图1所示,添加的Dy的量越大,较弱的磁化场待施加以达到足够的磁化百分比。图2中所示的磁化百分比。图1是用假定为100%的约3.2mA / m(相当于约4t)的磁化百分比以磁化百分比测量的相对值。\n\n[0087]以这种方式,通过代替HR的LR部分,可以提高磁化特性。本发明人认为,原因是饱和磁化强度由r表示的相位2T.14在这种情况下减少了增加了有效的磁化领域HEFF。也就是说,有效的磁化场Heff由Hex-N·表示,其中n是退磁因子。因此,随着饱和磁化减小,有效的磁化场HEFF增加。\n\n[0088]看烧结磁体的磁性,其代表比较例1至5,如表2所示,可以看出添加的Dy量越大,J矫顽力H越大cJ。但是,也可以看到剩余br,b顽固hcB 和最大能源产品(BH)max 随着DY的增加,所有均降低。\n\n[0089]如图1所示。如图2所示,代表实施例No.1和2的烧结块的磁化特性优于代表比较例3的烧结体的烧结体。还可以看出,实施例No.1(0dy + 10dy)的磁化特性优于实施例No.2(0dy + 5ds + 10dy)。因此,通过烧结多种稀土合金粉末的混合物而获得的烧结体,包括具有相互不同的摩尔级分的各个主要相的混合物,该磁化特性优于通过烧结稀土合金粉末所获得的烧结结构的磁化特性由单一组合物表示的主阶段(即,具有单个摩尔分数)。\n\n[0090]此外,将表示实施例1和2的烧结磁体的磁性与表示比较例3号的烧结磁体的磁性相比,这些磁体具有相当的磁性,如表2所示。\n\n[0091]可以理解,根据本发明的优选实施方案,与具有单个组合物的烧结体相比(即比较例3)相比,将待加入的染黄量可实现类似的磁化特性。因此,最终抑制了否则是由添加Dy引起的磁性的劣化。\n\n[0092]在下文中,根据本发明优选实施例的烧结磁体的微晶结构及其表示比较例的烧结磁体的微晶结构将参照图4和图5描述。 3a,3B,4一种,4乐队5。\n\n[0093]首先,将参考图1和2描述代表比较例3的烧结磁体的微晶结构。 3a和3b。图。图3A和3B是EPMA照片,其显示包括在烧结磁体中的稀土元素的浓度曲线,其代表比较例3(50)。具体地,图。图3A显示了从Lα射线强度分布获得的Nd的浓度分布,而图3B显示了从Lα射线强度分布获得的Dy的浓度分布。\n\n[0094]从图1中可以容易地看出。如图3A所示,Nd不均匀地分散。这是因为该烧结磁体具有微晶结构,包括主要阶段,该主阶段基本上由四方r构成2Fe.14B化合物,例如由Nd制成的富含Nd的主相,以及通常在基于R-Fe-B的烧结磁体中观察到的B质主阶段。另一方面,如图2所示。如图3B所示,Dy在烧结磁体的主要相中基本均匀地分布。\n\n[0095]接下来,将参考图1和2描述表示实施例1的烧结磁体的微晶结构。 4a和4b。图。图4A和4B是表示包括在烧结磁体中的稀土元素的浓度曲线的EPMA照片,表示实施例No.1(0dy + 10Dy)。具体而言,图4A和4B示出了Nd和Dy的浓度分布,并且对应于图1和2。图3A和3B分别。然而,图1和2的放大功率。图4a和4b是与图4和图5的一半。 3a和3b。\n\n[0096]从图中可以看出。如图4A所示,如图4所示,ND不均匀地分散。 3a。另一方面,比较图1和2中所示的轮廓。如图3B和4B所示,Dy在图1所示的烧结磁体的主相中更均匀地分散。图4B比图4所示的对应物。 3B。本发明人认为,由于使用粉末(0dy)的混合物,包括粉末(0dy)的混合物,包括没有的粉末和粉末(10Dy),包括较大量的Dy的粉末而不是目标组合物。在烧结磁体中也观察到类似的非均匀分散体,表示实施例2号。\n\n[0097]接下来,将参考图4描述。 5如何分布Dy与微晶结构的形式有关。图图5是表示图1和图2中所示的例子1(0dy + 10dy)的烧结磁体的背散射​​电子图像的EPMA照片。 4a和4b。图2中所示的照片。如图5所示,在相同的视野中拍摄。 4a和4b。\n\n[0098]如图1所示。如图5所示,表示实施例1的烧结磁体包括黑划线圆圈和Dy-差的主要阶段所示的富含Dy的主要相位,如白色虚线圆圈所示。烧结磁体具有微晶结构,其中这些富含富含的较差的主相是不均匀分散的。\n\n[0099]在下文中,将参考图1和图2进一步详细描述代表本发明优选实施例的具体示例的烧结体的微晶结构。 6,7那8一种,8B,9一种,9乐队10。通过使混合粉末进行烧结制备如下所述的烧结体,其中,其中两种稀土合金粉末,包括约0.5质量%和约9.5质量%的Dy,相对于具有该的整个稀土合金基本组合物(其将分别称为0.50和9.5ds),以一度的比例混合,与实施例1号相同。该烧结体表现出基本相同的磁性和磁化特性作为表示实施例1的烧结体。\n\n[0100]图图6是表示以这种方式获得的烧结结构的横截面的偏振显微镜照片。图图7是显示烧结体的背散射​​电子图像的EPMA照片。图。 8a,8B,9A和9B是EPMA照片,其显示烧结结构中包含的稀土元素的浓度曲线。具体地,图。图8A显示了Nd的Lα射线强度分布。图图8B示出了通过沿照片中的两条线扫描具有电子束而通过扫描烧结体而获得的ND的浓度分布。图图9A显示了Dy的Lα射线强度分布。图图9B示出了通过沿着照片中的两条线用电子束扫描烧结体而获得的Dy的浓度分布。图1和图2中所示的照片。在与图1所示的相同的视野中拍摄图8A至9B。图7.图。图10示意性地示出了根据在烧结体上的观察结果的结果的烧结体的微晶结构。\n\n[0101]从图1所示的偏振显微镜照片(具有约20μm的等级)可以看出。如图6所示,表示该具体实施例的烧结体基本上由平均晶粒尺寸为约5μm至约20μm的晶粒组成。这些晶粒中的大部分具有约5μm至约17μm的颗粒尺寸。这些晶粒几乎是单晶,并且观察到以显示对应于其定向方向的对比度。\n\n[0102]看着图2中所示的背散射电子图像(具有约3μm的等级)。如图7所示,可以看出,尺寸小于晶粒(尺寸为约5μm至约20μm)的一些结构单元。从图1和2中所示的照片可以看出。图8A和8B中,烧结的紧凑型也存在富含ND的主要相(即,白色图像部分)和ND差的主要阶段(即,黑色图像部分)。这些主要阶段的尺寸为约3μm至约5μm。以相同的方式,从图1和2中所示的照片可以看出。图9A和9B中,烧结的紧凑型也存在富含Dy的主要相(即,白色图像部分)和Dy-差的主要相(即,黑色图像部分)。比较图1和图2中所示的照片。彼此彼此彼此,可以看出,Nd的主要阶段与Dy-差的主要阶段基本相同,并且Nd差的主要阶段与富含Dy的主要阶段基本相同。此外,还可以看出,在烧结的结构中进一步存在具有Nd-富含(Dy-Port)和Nd差(Dy-Rich)主相之间的中间浓度的主相。\n\n[0103]考虑到这些结果,认为该具体示例的烧结结构具有微晶结构,例如图2中示意性地示出的微晶结构。 10。\n\n[0104]如图1所示。如图10所示,烧结体包括多个晶粒10a那10b 和10c 平均晶粒尺寸为约5μm至约20μm。这些晶粒中的每一个10a那10b 和10c 几乎是具有基本上对齐的取向的单晶。而且,这些晶粒中的每一个10a那10b 和10c 被认为是由于烧结诱导的粉末生长的粉末诱导的粉末颗粒的烧结而形成。因此,晶粒10a那10b 和10c 每个都包括Dy-Pord和富含Dy的主要阶段12和14第一和第二种类型,以反映待烧结的粉末的颗粒结构。此外,第三个主阶段16在两种类型的主要相之间也形成了中间体摩尔分数12和14具有相互不同的摩尔分数。这个第三个主阶段16被认为是由于在烧结过程中扩散的结果而形成。如在晶粒内示意性地示出10a 在图1中。 10,一些较差的主要阶段12还有一些富含粪的主要阶段14直接接触彼此,而不会插入第三个主阶段16它们之间。这些主要阶段已经生长,以使其晶格基本上彼此匹配,从而形成晶粒10a那10b 和10c 每个基本上由单晶组成。\n\n[0105]相应晶粒的尺寸和中间相的尺寸16在每个晶粒内部形成,取决于恰好含量的材料粉末混合或如何烧结混合粉末。然而,本发明人认为,任何烧结的紧凑,表现出优异的磁性和磁化特性,都应具有如图1所示的微晶结构。 10。\n\n[0106]目前尚不清楚为什么包括具有相互不同的组合物的多种主要相的本发明的烧结体具有比包含单个组成的主相的烧结体表现出磁化特性。然而,据信原因如下。\n\n[0107]富含Dy的主要相在低磁化场下磁化,从而增加有助于磁化Dy差的主要阶段的有效磁化场。因此,即使表观磁化场低,烧结体也会充分地磁化,这可能是可能的。另一个可想而想的原因是通过烧结的紧凑型本身的微晶结构促进了磁化,其中易于磁化的主相围绕难以磁化的主要相均匀地分散。\n\n[0108]应当注意,在烧结的紧凑型被磁化之后,每个晶粒中包括的Dy的富含差和差的主要相的磁矩表现得像单晶的磁矩。因此,如果甚至通过显微镜,晶粒之间的边界不肯定可识别,例如,可以认为具有对应于单晶的磁矩的磁性矩的富含富较差的主相的组,可以被视为作为晶粒。\n\n[0109]上述各种优选的实施方案提供了一种基于R-Fe-B基稀土合金烧结体,其在较低磁化场中充分磁化,以及制造这种烧结体的方法。\n\n[0110]因此,根据本发明的优选实施方案,通过在现有技术中添加相同的HR(例如,Dy),通过添加相同的HR(例如,Dy)来显着改善磁化特性。换句话说,即使在减少添加剂HR的量时,也可以实现类似的磁化特性。因此,防止了将通过添加HR而引起的磁性的劣化。\n\n[0111]此外,根据本发明的优选实施例,通过添加比现有技术的较少量的HR(例如,Dy)可实现传统水平的磁化特性。因此,可以显着降低相对昂贵的HR所需的量。\n\n[0112]因此,本发明可以有效地使用,以使磁体来自足够高的磁化场不适用的材料(例如,通过使用电动机的线圈在磁化之前应该嵌入电动机中的磁体,例如)。\n\n[0113]应当理解,前述描述仅是本发明的说明。在不脱离本发明的情况下,本领域技术人员可以设计各种替代和修改。因此,本发明旨在包括落入所附权利要求的范围内的所有这些替代,修改和变化。');
INSERT INTO `os_patent_instruction_text` VALUES (12925, 22754, '【0001】\n\n【発明の属する技術分野】\n\n本発明は、耐塩水性磁石合金粉、その製造方法及びそれを用いて得られるボンド磁石用樹脂組成物、ボンド磁石又は圧密磁石に関し、さらに詳しくは、塩水に触れる環境下でも錆が発生しない耐塩水性磁石合金粉、その製造方法及びそれを用いて得られるボンド磁石用樹脂組成物、ボンド磁石又は圧密磁石に関するものである。\n\n【0002】\n\n【従来の技術】\n\n近年、フェライト磁石、アルニコ磁石、希土類磁石などが、一般家電製品、通信·音響機器、医療機器、一般産業機器をはじめとする種々の製品にモーターやセンサーなどとして組込まれ、使用されている。これら磁石は、主に焼結法で製造されるが、脆く、薄肉化しにくいため複雑形状への成形は困難であり、また焼結時に15〜20%も収縮するため寸法精度を高められず、研磨等の後加工が必要で、用途面で大きな制約を受けている。\n\n【0003】\n\nこれに対し、ボンド磁石(樹脂結合型磁石)は、ポリアミド樹脂、ポリフェニレンサルファイド樹脂などの熱可塑性樹脂、あるいは、エポキシ樹脂、ビス·マレイミドトリアジン樹脂、不飽和ポリエステル樹脂、ビニルエステル樹脂などの熱硬化性樹脂をバインダーとし、これに磁石合金粉を充填して容易に製造できるため、新しい用途開拓が繰り広げられている。\n\n【0004】\n\n希土類元素を含む鉄系の磁石合金粉を、樹脂バインダーと混練してボンド磁石を製造する場合、磁石合金粉を数μm程度に粉砕する必要がある。粉砕は不活性ガスまたは有機溶媒中で行うが、粉砕後の磁石合金粉は極めて活性であり、大気に触れると急激に酸化が進み磁気特性を劣化させるので、微粉砕後に、僅かな酸素を不活性雰囲気に導入して徐酸化する方法が採られている。\n\n【0005】\n\nこうしたボンド磁石の中でも、特に、希土類元素を含む鉄系磁石合金粉を用いたボンド磁石は、塩水中で錆が発生しやすいため、例えば、成形体表面に熱硬化性樹脂等のコーティング膜を形成することで発錆を抑制したり、また、特開2000-208321号公報に開示されているように、成形体表面にリン酸塩含有塗料による被覆処理を施すことで発錆を抑制している。しかし、上記方法で作製された磁石合金粉でも塩水中のような腐食性の厳しい環境下では、錆の抑制に対して十分に満足できるものではなかった。\n\n【0006】\n\n従来、磁石合金粉を被膜処理する場合、粉砕溶媒中にリン酸を添加し、希土類や鉄のリン酸塩を合金粉表面に生成させる方法が検討されている。しかし、この方法で作製した磁石合金粉は、高温高湿度の環境下では磁気特性の低下が非常に少ないものの、これを用いて作製したボンド磁石を塩水中に24時間浸漬すると、赤錆の発生を多少は低減できるが完全になくすことはできなかった。\n\n【0007】\n\n近年、家電機器用モーター、自動車用センサーやモーターにおいて、海外で部品を組み立てるため船などによる輸送が必要となり、その使用環境、輸送環境がさらに厳しくなり、また機器を小型化するため、上記課題とともに磁気特性にも優れたものが要求されている\n\n。\n\n【0008】\n\n前記のような希土類元素を含む鉄系磁石合金粉から得られるボンド磁石の磁気特性は、これら用途に使用するには不十分であり、希土類元素を含む鉄系磁石合金粉の耐塩水性を早期に改善し、ボンド磁石の磁気特性を向上させることが強く望まれていた。\n\n【0009】\n\nまた、ボンド磁石よりもエネルギー積を高めるためには、磁石体の見かけ密度を、その磁石合金粉の真密度に近づけることが必要である。先に述べた焼結法がその解決方法として一般的な製造方法となるが、その他にも熱間圧縮成形法で圧密化する方法もある。たとえば、液体急冷法で製造されたネオジム-鉄-ほう素系磁石合金粉をホットプレスすることによって、最大エネルギー積が112kJ/m3程度の等方性圧密磁石が製造されている。\n\n【0010】\n\nまた、サマリウム-鉄-窒素系磁石合金粉では、およそ600℃以上に加熱するとサマリウム-鉄-窒素系化合物が分解するため、「粉体および粉末冶金」47号(2000)第801頁に示された等方性熱間圧縮成形法(HIP)、特開平6-077027号公報に開示された衝撃圧縮法、特開2000-294415号公報に開示された通電粉末圧延法が検討されている。\n\n【0011】\n\nこれらの圧密磁石においても、磁気特性に優れた磁石は得られるものの、その使用環境、輸送環境などの過酷化は、ボンド磁石の場合と同様であり、耐塩水性を改善する必要があった。また、従来の磁石合金粉を用いて圧密磁石を製造する場合には、サマリウム-鉄-窒素系化合物の分解、脱窒素あるいは磁石合金粉粒子同士の金属結合による粒子間磁気的相互作用が強まるためか、圧密磁石の保磁力が低く実用材としてはまだ不十分である。\n\n【0012】\n\n【発明が解決しようとする課題】\n\n本発明の目的は、前述した従来技術の問題点に鑑み、塩水に触れる環境下で錆が発生しない耐塩水性磁石合金粉、その製造方法及びそれを用いて得られるボンド磁石用樹脂組成物、ボンド磁石又は圧密磁石を提供することにある。\n\n【0013】\n\n【問題を解決するための手段】\n\n本発明者らは、上記課題を解決するために鋭意研究を重ねた結果、希土類元素を含む鉄系の磁石合金粉に、鉄と希土類元素の金属リン酸塩、及びアルミニウム、亜鉛、マンガン、銅又はカルシウムから選ばれた1種以上の金属リン酸塩の2種類が複合化した金属リン酸塩被膜を形成すると、該被膜が塩水を遮断し、磁石合金粉の発錆を抑制する耐塩水性に優れた磁石合金粉が得られることを見出し、本発明を完成するに至った。\n\n【0014】\n\n即ち、本発明の第1の発明によれば、平均粒径20μmを超える希土類元素を含む鉄系磁石合金粉を、リン酸を含む有機溶媒中で平均粒径8μm以下に粉砕した後に、引き続いて、このリン酸溶液にアルミニウム、亜鉛、マンガン、銅又はカルシウムから選ばれた1種以上の金属の酸化物、複合酸化物、リン酸塩、又はリン酸水素化合物を添加し、該溶液を攪拌することにより、希土類元素を含む鉄系磁石合金粉からなる磁石粉末(A)の磁石合金粉の表面上に、鉄と希土類元素の金属リン酸塩(b-1)、及びアルミニウム、亜鉛、マンガン、銅又はカルシウムから選ばれた1種以上の金属リン酸塩(b-2)からなる複合金属リン酸塩被膜(B)が均一に形成されており、かつ、金属リン酸塩(b-2)の金属成分が、複合金属リン酸塩被膜(B)の金属成分に対して30重量%以上である複合金属リン酸塩被膜を形成することを特徴とする耐塩水性磁石合金粉の製造方法が提供される。\n\n【0015】\n\nまた、本発明の第2の発明によれば、第1の発明において、複合金属リン酸塩被膜(B\n\n)の厚さが、5〜100nmであることを特徴とする耐塩水性磁石合金粉の製造方法が提供される。\n\n【0019】\n\nまた、本発明の第3の発明によれば、第1又は2の発明において、有機溶媒が、N,N-ジメチルホルムアミド、ホルムアミド、2-メトキシエタノール、エタノール、メタノール又はイソプロピルアルコールから選ばれた1種以上であることを特徴とする耐塩水性磁石合金粉の製造方法が提供される。\n\n【0020】\n\nまた、本発明の第4の発明によれば、第1〜3のいずれかの発明において、リン酸塩溶液を形成する金属成分が、希土類元素を含む鉄系磁石合金粉に対して、0.01〜1mol/kg(粉末重量当たり)の割合で添加されることを特徴とする耐塩水性磁石合金粉の製造方法が提供される。\n\n【0021】\n\nさらに、本発明の第5の発明によれば、第1〜4のいずれかの発明において、リン酸は、希土類元素を含む鉄系磁石合金粉に対して、0.1〜2mol/kg(粉末重量当たり)の割合で添加されることを特徴とする耐塩水性磁石合金粉の製造方法が提供される。\n\n【0025】\n\n【発明の実施の形態】\n\n以下、本発明の耐塩水性磁石合金粉、その製造方法及びそれを用いたボンド磁石用樹脂組成物、ボンド磁石又は圧密磁石について詳細に説明する。\n\n【0026】\n\n1.耐塩水性磁石合金粉\n\n本発明の耐塩水性磁石合金粉は、希土類元素を含む鉄系磁石合金粉からなる磁石合金粉(A)の表面に、特定な金属リン酸塩が複合化した被膜(B)を形成してなる耐塩水性磁石合金粉である。\n\n【0027】\n\nA  磁石合金粉\n\n磁石合金粉は、希土類元素を含む鉄系磁石合金の粉末であれば、特に制限されない。希土類-鉄系磁石合金粉としては、例えば、希土類-鉄-ほう素系、希土類-鉄-窒素系などの各種磁石合金粉を使用でき、中でも希土類-鉄-窒素系の磁石合金粉が好適である。希土類元素としては、Sm、Nd、Pr、Y、La、Ce、またはGd等が挙げられ、単独若しくは混合物として使用できる。これらの中では、特にSm又はNdを5〜40at.%、Feを50〜90at.%含有するものが好ましい。\n\n【0028】\n\n希土類-鉄系磁石合金粉には、フェライト、アルニコなど、ボンド磁石や圧密磁石の原料となる各種磁石合金粉を混合してもよく、異方性磁石合金粉だけでなく、等方性磁石合金粉も対象となるが、異方性磁場(HA)が、4.0MA/m以上の磁石合金粉が好ましい。\n\n【0029】\n\nまた、ボンド磁石や圧密磁石の原料となるため、磁石合金粉の平均粒径は、8μm以下、特に5μm以下であることが望ましい。平均粒径が8μmを超えると、成形性が悪化するので好ましくない。\n\n【0030】\n\nB  複合金属リン酸塩被膜\n\n本発明の磁石合金粉は、その表面が鉄と希土類元素の金属リン酸塩(b-1)、及びアルミニウム、亜鉛、マンガン、銅又はカルシウムのいずれか1種以上を含む金属のリン酸塩(b-2)が複合化した被膜で均一に被覆されている。ここで、均一に被覆されるとは、磁石合金粉表面の80%以上、好ましくは85%以上、さらに好ましくは90%以上が複合金属リン酸塩被膜で覆われていることをいう。\n\n【0031】\n\n金属リン酸塩(b-1)は、リン酸サマリウム、リン酸鉄などで、これは磁石合金粉を構成する希土類や鉄にリン酸が反応して形成されたものである。\n\n一方、金属リン酸塩(b-2)は、例えば、リン酸アルミニウム、リン酸亜鉛、リン酸マンガン、リン酸銅、リン酸カルシウム又はこれらが2種以上複合した金属塩などである。これらアルミニウム、亜鉛、マンガン、銅およびカルシウム以外に、クロム、ニッケル、マグネシウムなどの金属リン酸塩が含まれていてもかまわない。\n\n【0032】\n\n金属リン酸塩(b-1)と、金属リン酸塩(b-2)とが複合化した金属リン酸塩は、樹脂バインダーとの結合力を高め、磁石合金粉の耐塩水性を高める成分である。但し、充分な耐塩水性を得るためには、金属リン酸塩(b-2)の金属成分、すなわちアルミニウム、亜鉛、マンガン、銅又はカルシウムから選択された1種以上が、複合金属リン酸塩被膜(B)の金属成分に対して、30重量%以上、特に50重量%以上、より好ましくは80重量%以上含まれた複合金属リン酸塩とする。\n\n【0033】\n\n複合金属リン酸塩被膜は、平均で5〜100nmの厚さが必要である。平均厚さが5nm未満であると十分な耐塩水性が得られず、一方、100nmを越えると磁気特性が低下し、またボンド磁石を作製する際には混練性や成形性が低下する。\n\n【0034】\n\nこの磁石合金粉を樹脂バインダーと混合してボンド磁石を作製した場合、海水の塩分濃度付近である5%塩水中に24時間浸漬しても、ボンド磁石に赤錆は全く生じない。また磁石合金粉を圧密化した磁石についても、同様に高い耐塩水性を示す。\n\n【0035】\n\n2.耐塩水性磁石合金粉の製造方法\n\n本発明の耐塩水性磁石合金粉を製造するには、希土類元素を含む鉄系磁石合金粉を、一段階で複合リン酸塩化するか、二段階で複合リン酸塩化するかで区別される二通りの方法がある。\n\n【0036】\n\n希土類元素を含む鉄系磁石合金粉を、一段階で複合リン酸塩化する方法とは、平均粒径20μmを超える希土類元素を含む鉄系磁石合金粉を、有機溶媒中で、平均粒径8μm以下に粉砕する際、少なくともアルミニウム、亜鉛、マンガン、銅又はカルシウムから選ばれた1種以上の金属の酸化物、複合酸化物、リン酸塩又はリン酸水素化合物と、リン酸を添加した後、該溶液を攪拌する方法である。\n\n【0037】\n\n先ず、平均粒径20μmを超える希土類元素を含む鉄系磁石合金の粉末に、有機溶媒を加え、磁石合金粉の粉砕前、あるいは粉砕中に、アルミニウム、亜鉛、マンガン、銅又はカルシウムから選ばれた1種以上の酸化物、リン酸塩又はリン酸水素化合物の1種以上からなる金属成分を添加する。該金属成分がリン酸塩又はリン酸水素化合物以外の場合、及びリン酸塩又はリン酸水素化合物が有機溶媒に溶解し難い場合には、リン酸を添加して、攪拌を続ける。攪拌は、通常1〜180分間続行する。\n\n【0038】\n\n金属成分は、アルミニウム、亜鉛、マンガン、銅又はカルシウムなどのイオンの供給源であり、有機溶媒に溶け金属イオンを生成する酸化物、複合酸化物、リン酸塩又はリン酸水素化合物などの金属化合物である。\n\n【0039】\n\n有機溶媒としては、特に制限はなく、2-メトキシエタノール、イソプロピルアルコール、エタノール、トルエン、メタノール、ヘキサン等のいずれか1種または2種以上の混合物を用いると良い。但し、メタノールは、リン酸と速やかに反応してエステル化し、良好な被覆が形成されるのを妨げる恐れがあるので取り扱いには注意を要する。\n\n【0040】\n\n前記の金属成分が容易に金属イオンを生成し、磁石合金粉の溶解を適度に調整するために\n\nは、N,N-ジメチルホルムアミド、ホルムアミド等の極性溶媒を混合することが望ましい。また、磁石合金粉の溶解を促進するために、有機溶媒に水や酸を混合しても良い。\n\n【0041】\n\nアルミニウム化合物としては、アルミニウムイオンの供給源となり、有機溶媒に溶ける化合物であれば、特に制限されず、例えば、酢酸アルミニウム、硫酸アルミニウム、塩化アルミニウム、塩化アルミニウムアンモニウム、安息香酸アルミニウム、炭酸アルミニウム、エチルアセト酢酸アルミニウム、ぎ酸アルミニウム、水酸化アルミニウム、硝酸アルミニウム、ナフテン酸アルミニウム、オレイン酸アルミニウム、しゅう酸アルミニウム、酸化アルミニウム、リン酸アルミニウム、リン酸水素アルミニウム、塩化カリウムアルミニウム、ステアリン酸アルミニウム、硫化アルミニウム、フタロシアニンアルミニウム、又は酒石酸アルミニウムが例示される。特に好ましいのは、リン酸アルミニウム、あるいはリン酸水素アルミニウムである。\n\n【0042】\n\n亜鉛化合物としては、亜鉛イオンの供給源となり、有機溶媒に溶ける化合物であれば、特に制限されず、例えば、酢酸亜鉛、硫酸亜鉛、塩化亜鉛、塩化亜鉛アンモニウム、安息香酸亜鉛、炭酸亜鉛、エチルアセト酢酸亜鉛、ぎ酸亜鉛、水酸化亜鉛、硝酸亜鉛、ナフテン酸亜鉛、オレイン酸亜鉛、しゅう酸亜鉛、酸化亜鉛、リン酸亜鉛、リン酸亜鉛四水和物、リン酸水素亜鉛、リン酸亜鉛カルシウム、塩化カリウム亜鉛、ステアリン酸亜鉛、硫化亜鉛、フタロシアニン亜鉛、又は酒石酸亜鉛が例示される。特に好ましいのは、酸化亜鉛、リン酸亜鉛四水和物、或いはリン酸水素亜鉛である。\n\n【0043】\n\nマンガン化合物としては、マンガンイオンの供給源となり、有機溶媒に溶ける化合物であれば、特に制限されず、例えば、酢酸マンガン、硫酸マンガン、塩化マンガン、塩化マンガンアンモニウム、安息香酸マンガン、炭酸マンガン、エチルアセト酢酸マンガン、ぎ酸マンガン、水酸化マンガン、硝酸マンガン、ナフテン酸マンガン、オレイン酸マンガン、しゅう酸マンガン、酸化マンガン、リン酸マンガン、リン酸水素マンガン、塩化カリウムマンガン、ステアリン酸マンガン、硫化マンガン、フタロシアニンマンガン、又は酒石酸マンガンが例示される。特に好ましいのは、酸化マンガン、或いはリン酸水素マンガンである。\n\n【0044】\n\nまた、銅化合物としては、銅イオンの供給源となり、有機溶媒に溶ける化合物であれば、特に制限されず、例えば、酢酸銅、硫酸銅、塩化銅、塩化銅アンモニウム、安息香酸銅、炭酸銅、エチルアセト酢酸銅、ぎ酸銅、水酸化銅、硝酸銅、ナフテン酸銅、オレイン酸銅、しゅう酸銅、酸化銅、リン酸銅、リン酸水素銅、塩化カリウム銅、ステアリン酸銅、硫化銅、フタロシアニン銅、または酒石酸銅などが用いられる。特に好ましいのは、酸化銅(I)、或いはリン酸水素銅である。\n\n【0045】\n\nさらに、カルシウム化合物としては、カルシウムイオンの供給源となり、有機溶媒に溶ける化合物であれば、特に制限されず、例えば、酢酸カルシウム、硫酸カルシウム、塩化カルシウム、塩化カルシウムアンモニウム、安息香酸カルシウム、炭酸カルシウム、エチルアセト酢酸カルシウム、ぎ酸カルシウム、水酸化カルシウム、硝酸カルシウム、ナフテン酸カルシウム、オレイン酸カルシウム、しゅう酸カルシウム、酸化カルシウム、リン酸カルシウム、リン酸水素カルシウム、塩化カリウムカルシウム、ステアリン酸カルシウム、硫化カルシウム、フタロシアニンカルシウム、又は酒石酸カルシウムが例示される。特に好ましいのは、酸化カルシウム、或いはリン酸水素カルシウムである。\n\n【0046】\n\n金属成分であるアルミニウム、亜鉛、マンガン、銅又はカルシウムから選ばれた1種以上の金属の酸化物、複合酸化物、リン酸塩又はリン酸水素化合物は、粉砕する磁石合金粉の粒径、表面積等に合わせて最適量を添加するが、該磁石合金粉に対して、0.01〜1mol/kg(粉末重量当たり)とする。すなわち、0.01mol/kg未満であると磁\n\n石合金粉の表面が十分に被覆されないために耐塩水性が改善されず、1mol/kgを超えると磁化の低下が著しくなり、磁石としての性能が低下する。\n\n【0047】\n\n上記の金属化合物は、溶媒中でイオン化し、磁石合金粉の成分である希土類金属や鉄が溶媒へ溶け出すにともない、磁石合金粉の表面で反応して金属リン酸塩が複合した被膜を形成する。\n\n【0048】\n\nリン酸としては、金属化合物と反応して金属リン酸塩を生成するオルトリン酸をはじめ、亜リン酸、次亜リン酸、ピロリン酸、直鎖状のポリリン酸、環状のメタリン酸が使用できる。また、リン酸アンモニウム、リン酸アンモニウムマグネシウムなども使用できる。これら化合物は、単独でも複数種を組み合わせてもよく、通常、キレート剤、中和剤などと混合して処理剤とされる。\n\n【0049】\n\nこれらのうち、オルトリン酸が好ましい性能を発揮するが、その理由は、これが上記の金属化合物と反応しやすく、希土類系金属を成分とする磁石合金粉の表面に保護膜を形成しやすいためと考えられる。\n\n【0050】\n\nリン酸は、磁石合金粉の粒径、表面積等に合わせて最適量を添加するが、通常は、粉砕する磁石合金粉に対して0.1〜2mol/kg(粉末重量当たり)であり、好ましくは0.15〜1.5mol/kg、さらに好ましくは0.2〜0.4mol/kgである。\n\n【0051】\n\nすなわち、0.1mol/kg未満であると、磁石合金粉の表面が十分に被覆されないために耐塩水性が改善されず、また大気中で乾燥させると酸化·発熱して磁気特性が極端に低下する。2mol/kgを超えると、磁石合金粉との反応が激しく起こって磁石合金粉が溶解する。\n\n【0052】\n\nリン酸の濃度は、特に制限されず、無水リン酸、50〜99%リン酸水溶液(例えば、85%リン酸水溶液、75%リン酸水溶液)などが用いられる。なお、有機溶剤も、特に制限はなく、通常はエタノールまたはイソプロピルアルコール等のアルコール類、ケトン類、低級炭化水素類、芳香族類、またはこれらの混合物が用いられる。但し、メタノールは、リン酸と速やかに反応してエステル化し、良好な被覆が形成されるのを妨げる恐れがあるので取り扱いには注意を要する。\n\n【0053】\n\n金属成分を添加する時期は、磁石粉末を粉砕する際で有れば、いつでも良く、粉砕前に溶媒に溶かしておき、粉砕途中に一度に添加する方法、粉砕中、徐々に添加する方法などが用いられる。\n\n【0054】\n\nこれによって、粉砕中に溶けだした希土類元素、鉄など磁石を構成する元素がリン酸塩を形成し、これに添加した金属化合物も反応しあって、複合金属リン酸塩が磁石合金粉を被覆する。この反応が完結し、充分な膜厚の被膜を形成するには、金属化合物の種類などにもよるが、1〜180分間、好ましくは3〜150分、さらに好ましくは5〜60分の攪拌(粉砕)、保持時間が必要である。\n\n【0055】\n\n平均粒径20μmを超える鉄系磁石合金粗粉は、平均粒径8μm以下、好ましくは1〜5μmまで粉砕される。\n\n【0056】\n\n複合リン酸塩被膜を形成させる第二の方法は、先ず、リン酸を含む有機溶媒に磁石合金粉を配合して該合金粉を粉砕し、次に、このリン酸塩溶液に金属化合物を添加して攪拌する方法である。\n\n【0057】\n\n有機溶媒の種類、リン酸や金属成分の添加量などは、前記第一の方法と同じ条件が採用される。第二の方法であれば、耐塩水性に優れる金属リン酸塩(b-2)が、金属リン酸塩(b-1)よりも後に形成されるので、さらに良好な複合金属リン酸塩被膜が得られるので一層有利である。\n\n【0058】\n\n上記のうち、いずれかの湿式処理法で被覆処理された磁石合金粉は、その後に加熱し乾燥することで、表面の被膜が磁石合金粉に定着する。すなわち、処理溶液と磁石合金粉は、被膜形成後に、100〜500℃の真空オーブン中で1〜30時間乾燥させる。不活性ガス中または真空中で加熱処理を施すことが好ましい。100℃未満で加熱処理を施すと、磁石合金粉の乾燥が十分進まずに、安定な表面被膜の形成が阻害され、また、500℃を超える温度で加熱処理を施すと、磁石合金粉が熱的なダメージを受け、保磁力がかなり低くなるという問題がある。\n\n【0059】\n\n金属リン酸塩被膜を形成した耐塩水性磁石合金粉には、必要に応じて、さらにシラン系、アルミネート系、チタネート系など各種のカップリング剤やアビエチン酸系化合物などから選択された1種以上を用いて被覆してもよい。\n\n【0060】\n\n3.ボンド磁石用樹脂組成物及びボンド磁石\n\n本発明のボンド磁石は、金属リン酸塩を被覆した耐塩水性磁石合金粉に、熱可塑性樹脂や熱硬化性樹脂を樹脂バインダーとして配合することで容易に製造できる。\n\n【0061】\n\n樹脂バインダーは、磁石粉末の結合材として働く成分であり、ポリアミド樹脂、ポリフェニレンサルファイド樹脂などの熱可塑性樹脂、あるいは、エポキシ樹脂、ビス·マレイミドトリアジン樹脂、不飽和ポリエステル樹脂、ビニルエステル樹脂、硬化反応型シリコーンゴムなどの熱硬化性樹脂が使用できるが、特に熱可塑性樹脂が好ましい。\n\n【0062】\n\n熱可塑性樹脂は、特に制限されず、従来樹脂バインダーとして公知のものを使用できる。\n\n熱可塑性樹脂の具体例としては、6ナイロン、6、6ナイロン、11ナイロン、12ナイロン、6、12ナイロン、芳香族系ナイロン、これらの分子を一部変性した変性ナイロン等のポリアミド樹脂;直鎖型ポリフェニレンサルファイド樹脂、架橋型ポリフェニレンサルファイド樹脂、セミ架橋型ポリフェニレンサルファイド樹脂;低密度ポリエチレン、線状低密度ポリエチレン樹脂、高密度ポリエチレン樹脂、超高分子量ポリエチレン樹脂、ポリプロピレン樹脂、エチレン-酢酸ビニル共重合樹脂、エチレン-エチルアクリレート共重合樹脂、アイオノマー樹脂、ポリメチルペンテン樹脂;ポリスチレン樹脂、アクリロニトリル-ブタジエン-スチレン共重合樹脂、アクリロニトリル-スチレン共重合樹脂;ポリ塩化ビニル樹脂、ポリ塩化ビニリデン樹脂、ポリ酢酸ビニル樹脂、ポリビニルアルコール樹脂、ポリビニルブチラール樹脂、ポリビニルホルマール樹脂;メタクリル樹脂;ポリフッ化ビニリデン樹脂、ポリ三フッ化塩化エチレン樹脂、四フッ化エチレン-六フッ化プロピレン共重合樹脂、エチレン-四フッ化エチレン共重合樹脂、四フッ化エチレン-パーフルオロアルキルビニルエーテル共重合樹脂、ポリテトラフルオロエチレン樹脂;ポリカーボネート樹脂、ポリアセタール樹脂、ポリエチレンテレフタレート樹脂、ポリブチレンテレフタレート樹脂、ポリフェニレンオキサイド樹脂、ポリアリルエーテルアリルスルホン樹脂、ポリエーテルスルホン樹脂、ポリエーテルエーテルケトン樹脂、ポリアリレート樹脂、芳香族ポリエステル樹脂、酢酸セルロース樹脂、前出の各樹脂系エラストマー等が挙げられ、これらの単重合体や他種モノマーとのランダム共重合体、ブロック共重合体、グラフト共重合体、他の物質による末端基変性品等が挙げられる。\n\n【0063】\n\nこれら熱可塑性樹脂は、得られるボンド磁石に所望の機械的強度が得られる範囲で、溶融粘度や分子量が低いものが望ましい。また、熱可塑性樹脂の形状は、パウダー状、ビーズ状、ペレット状等、特に限定されないが、磁石合金粉と均一に混合される点で、パウダー\n\n状が望ましい。\n\n【0064】\n\n熱可塑性樹脂の配合量は、磁石合金粉100重量部に対して、通常5〜100重量部、好ましくは5〜50重量部である。熱可塑性樹脂の配合量が5重量部未満であると、組成物の混練抵抗(トルク)が大きくなったり、流動性が低下して磁石の成形が困難となり、一方、100重量部を超えると、所望の磁気特性が得られない。\n\n【0065】\n\n熱硬化性樹脂であれば、その取扱い性、ポットライフの面から2液型が有利であり、2液を混合後は、常温から200℃までの温度で硬化しうるものが好ましい。その反応機構は、一般的な付加重合型でも縮重合型であってもよい。また、必要に応じて過酸化物等の架橋反応型モノマーやオリゴマーを添加しても差し支えない。\n\n【0066】\n\nこれらは、反応可能な状態にあれば、重合度や分子量に制約されないが、硬化剤や他の添加剤等との最終混合状態で、ASTM100型レオメーターで測定した150℃における動的粘度が500Pa·s以下、好ましくは400Pa·s以下、特に好ましくは、100〜300Pa·sである。動的粘度が500Pa·sを超えると、成形時に著しい混練トルクの上昇、流動性の低下を招き、成形困難になるので好ましくない。一方、動的粘度が小さくなりすぎると、磁石粉末と樹脂バインダーが成形時に分離しやすくなるため、0.5Pa·s以上であることが望ましい。\n\n【0067】\n\n樹脂バインダーは、磁石合金粉100重量部に対して、3〜50重量部の割合で添加される。添加量は7〜30重量部、さらには、10〜20重量部がより好ましい。3重量部未満では、著しい混練トルクの上昇、流動性の低下を招いて、成形困難になり、一方、50重量部を超えると、所望の磁気特性が得られないので好ましくない。\n\n【0068】\n\n本発明における樹脂バインダーには、滑剤、紫外線吸収剤、難燃剤や種々の安定剤等を添加できる。\n\n【0069】\n\n滑剤としては、例えば、パラフィンワックス、流動パラフィン、ポリエチレンワックス、ポリプロピレンワックス、エステルワックス、カルナウバ、マイクロワックス等のワックス類;ステアリン酸、1,2-オキシステアリン酸、ラウリン酸、パルミチン酸、オレイン酸等の脂肪酸類;ステアリン酸カルシウム、ステアリン酸バリウム、ステアリン酸マグネシウム、ステアリン酸リチウム、ステアリン酸亜鉛、ステアリン酸アルミニウム、ラウリン酸カルシウム、リノール酸亜鉛、リシノール酸カルシウム、2-エチルヘキソイン酸亜鉛等の脂肪酸塩(金属石鹸類);ステアリン酸アミド、オレイン酸アミド、エルカ酸アミド、ベヘン酸アミド、パルミチン酸アミド、ラウリン酸アミド、ヒドロキシステアリン酸アミド、メチレンビスステアリン酸アミド、エチレンビスステアリン酸アミド、エチレンビスラウリン酸アミド、ジステアリルアジピン酸アミド、エチレンビスオレイン酸アミド、ジオレイルアジピン酸アミド、N-ステアリルステアリン酸アミド等の脂肪酸アミド類;ステアリン酸ブチル等の脂肪酸エステル;エチレングリコール、ステアリルアルコール等のアルコール類;ポリエチレングリコール、ポリプロピレングリコール、ポリテトラメチレングリコール、及びこれら変性物からなるポリエーテル類;ジメチルポリシロキサン、シリコングリース等のポリシロキサン類;弗素系オイル、弗素系グリース、含弗素樹脂粉末といった弗素化合物;窒化珪素、炭化珪素、酸化マグネシウム、アルミナ、二酸化珪素、二硫化モリブデン等の無機化合物粉体が挙げられる。これらの滑剤は、一種単独でも二種以上組み合わせても良い。該滑剤の配合量は、磁石合金粉100重量部に対して、通常0.01〜20重量部、好ましくは0.1〜10重量部である。\n\n【0070】\n\n紫外線吸収剤としては、フェニルサリシレート等のベンゾフェノン系;2-(2’-ヒドロキシ-5’-メチルフェニル)ベンゾトリアゾール等のベンゾトリアゾール系;蓚酸ア\n\nニリド誘導体などが挙げられる。\n\n【0071】\n\nまた、安定剤としては、ビス(2、2、6、6-テトラメチル-4-ピペリジル)セバケート、ビス(1、2、2、6、6-ペンタメチル-4-ピペリジル)セバケート、1-[2-{3-(3,5-ジ-第三ブチル-4-ヒドロキシフェニル)プロピオニルオキシ}エチル]-4-{3-(3、5-ジ-第三ブチル-4-ヒドロキシフェニル)プロピオニルオキシ}-2、2、6、6-テトラメチルピペリジン、8-ベンジル-7、7、9、9-テトラメチル-3-オクチル-1、2、3-トリアザスピロ[4、5]ウンデカン-2、4-ジオン、4-ベンゾイルオキシ-2、2、6、6-テトラメチルピペリジン、こはく酸ジメチル-1-(2-ヒドロキシエチル)-4-ヒドロキシ-2、2、6、6-テトラメチルピペリジン重縮合物、ポリ[[6-(1、1、3、3-テトラメチルブチル)イミノ-1、3、5-トリアジン-2、4-ジイル][(2、2、6、6-テトラメチル-4-ピペリジル)イミノ]ヘキサメチレン[[2、2、6、6-テトラメチル-4-ピペリジル)イミノ]]、2-(3、5-ジ-第三ブチル-4-ヒドロキシベンジル)-2-n-ブチルマロン酸ビス(1、2、2、6、6-ペンタメチル-4-ピペリジル)等のヒンダード·アミン系安定剤のほか、フェノール系、ホスファイト系、チオエーテル系などの抗酸化剤等が挙げられる。これらの安定剤も、一種単独でも二種以上組み合わせても良い。該安定剤の配合量は、磁石合金粉100重量部に対して、通常0.01〜5重量部、好ましくは0.05〜3重量部である。\n\n【0072】\n\n混合方法は、特に限定されず、例えば、リボンブレンダー、タンブラー、ナウターミキサー、ヘンシェルミキサー、スーパーミキサー、プラネタリーミキサー等の混合機、或いはバンバリーミキサー、ニーダー、ロール、ニーダールーダー、単軸押出機、二軸押出機等の混練機が使用できる。\n\n【0073】\n\n次いで、上記のボンド磁石用組成物は、熱可塑性樹脂の場合、その溶融温度で加熱溶融された後、所望の形状を有する磁石に成形される。その際、成形法としては、従来からプラスチック成形加工等に利用されている射出成形法、押出成形法、射出圧縮成形法、射出プレス成形法、トランスファー成形法等の各種成形法が挙げられるが、これらの中では、特に射出成形法、押出成形法、射出圧縮成形法、及び射出プレス成形法が好ましい。\n\n【0074】\n\n熱硬化性樹脂は、混合時の剪断発熱等によって硬化が進まないよう、剪断力が弱く、かつ冷却機能を有する混合機を使用することが好ましい。混合により組成物が塊状化するので、これを射出成形法、圧縮成形法、押出成形法、圧延成形法、或いはトランスファー成形法等により成形する。\n\n【0075】\n\nこうして得られたボンド磁石は、実用上重要な高温環境下で複合金属リン酸塩被膜に欠陥部が生じにくく、塩水の影響を受けることがない。従来は、サマリウム-鉄-窒素系合金磁石のような核発生型の保磁力発現機構を示す磁石合金粉末で、一部にでもこのような欠陥領域が生じると著しく保磁力が低下する問題があったが、本発明によれば、このような問題点が完全に克服される。\n\n【0076】\n\n4.圧密磁石\n\n本発明の耐塩水性磁石合金粉を用いて、圧密磁石を製造する方法は、特に限定されず、高い圧縮力がかけられ、見かけ密度を真密度の85%以上としうる方法であればよい。見かけ密度が85%未満では磁気特性が低く、また、磁石合金粉の劣化要因である酸素や水分の経路となるオープンポアによって耐塩水性が低下する。\n\n本発明の磁石合金粉は、そのままで高い耐塩水性を示すが、圧密磁石のオープンポアを無くすことによって、さらに高い耐塩水性を実現できる。\n\n【0077】\n\nなお、本発明のサマリウム-鉄-窒素系磁石合金粉から圧密磁石を製造する場合には、上記の耐塩水性以外に磁気特性、特に磁石の保磁力が改善される。圧密化するとき、サマリウム-鉄-窒素系化合物の分解や脱窒素を防止するとともに、粒子間に非磁性体のリン酸塩被膜が均一に存在するため保磁力の低下を防ぐことができる。\n\n【0078】\n\n【実施例】\n\n以下、実施例及び比較例を挙げて本発明を具体的に説明するが、本発明は、これら実施例によって何ら限定されるものではない。\n\n【0079】\n\n(1)成分\n\n磁石合金粉\n\n·Sm-Fe-N系磁石合金粉[住友金属鉱山(株)製、平均粒径:30μm]\n\n有機溶媒\n\n·イソプロピルアルコール(IPA)[関東化学(株)製]\n\n·N,N-ジメチルホルムアミド(DMF)[関東化学(株)製]\n\n添加剤(被膜成分)\n\n·酸化亜鉛[関東化学(株)製]\n\n·リン酸亜鉛四水和物[関東化学(株)製]\n\n·リン酸アルミニウム[関東化学(株)製]\n\n·酸化マンガン[関東化学(株)製]\n\n·酸化銅(I)[関東化学(株)製]\n\n·酸化カルシウム[関東化学(株)製]\n\nリン酸\n\n·85%オルトリン酸水溶液[商品名:りん酸、関東化学(株)製]\n\n【0080】\n\n(2)被覆された磁石合金粉の特性、性能の測定、評価。\n\n·被膜厚さ及び金属リン酸塩(b-2)被膜の複合リン酸塩被膜(B)に対する金属成分の比率\n\n得られた磁石合金粉試料の断面をFE-TEM(電界放出型透過電子顕微鏡)で観察し、被膜厚さを測定した。また、被膜組成分析を、TEM-EDX(エネルギー分散型蛍光X線分析装置)で行い、金属リン酸塩(b-2)被膜の複合リン酸塩被膜(B)に対する金属成分の比率を求めた。\n\n【0081】\n\n·耐塩水性\n\n得られた磁石合金粉試料とナイロン12を、200℃のラボプラストミル中で30分混練し、空冷後、各組成物をプラスチック粉砕機により粉砕してそれぞれ成形用ペレットとした。得られたペレットを射出成形機にて7mm方向に560kA/mの配向磁界をかけながら、φ10mm×7mmの円柱状希土類系磁石を製造した。これを5%NaCl水溶液中に成形体の半分までつかるようにして浸漬後、室温にて24時間放置し、錆の発生の有無を目視観察した。\n\n【0082】\n\n·磁気特性評価\n\n上記の円柱状希土類系磁石試料の磁気特性を、チオフィー型自記磁束計にて常温で測定した。磁気特性のうち残留磁化(Br)の結果を表1、表2に示す。\n\n【0083】\n\n[実施例1〜7]\n\n容器内部を窒素で置換したアトライタを用い、回転数200rpmで、還元磁石合金粉(Sm-Fe-N系)1kgを1.5kgの有機溶媒中で2時間粉砕し、平均粒径3μmの磁石合金粉を作製した。表1の記載に従って所定量の85%オルトリン酸水溶液、酸化物、リン酸塩などを合金粉に添加、攪拌した。その後、磁石合金粉を真空中150℃で4時\n\n間乾燥させた。得られた磁石合金粉の被膜厚さを測定し、金属リン酸塩(b-2)被膜の複合リン酸塩被膜(B)に対する金属成分の比率を求め、表1の結果を得た。\n\n次に、得られた磁石合金粉を用いて、磁粉体積率が60%となるように、12ナイロンを添加し、ラボプラストミルで混練後に、200℃にて射出成形してボンド磁石を作製した。得られた磁石試料の磁化を上記方法で測定し、表1の結果を得た。\n\n【0084】\n\n【表1】\n\n\n\n【0085】\n\n[比較例1〜4]\n\n添加剤を用いないか、添加剤やリン酸の量を変えて、上記の実施例と同様にして、磁石合金粉を処理した。結果を表1に示した。\n\n【0086】\n\n[実施例8〜14]\n\n実施例1〜7で用いた磁石合金粉10gを、窒素雰囲気下でアルミニウムカプセルに充填し、1600kA/mの配向磁界をかけながら50MPaで一軸加圧した。次に、この圧粉体をカプセルごと450℃、30min.、200MPaで等方性熱間圧縮法(HIP)で成形した。圧力媒体として窒素ガスを用いた。得られた磁石試料の磁化を測定し、表2の結果を得た。ここで見かけ密度は、真密度を7.67g/ccとした相対密度で表している。\n\n【0087】\n\n【表2】\n\n\n\n【0088】\n\n[比較例5〜8]\n\n比較例1〜4で用いた磁石合金粉から、実施例8〜14に示した方法により等方性熱間圧縮法(HIP)で成形して圧密磁石を作製した。結果を表2に示した。\n\n【0089】\n\n表1から、本発明の磁石合金粉を成形して得られたボンド磁石は、磁石合金粉の表面が適切な厚さの複合金属リン酸塩被膜によって均一に保護されているため、磁化が0.7T以上であり、かつ5%塩水中でも錆の発生がないことが分かる。\n\nまた、表2から、本発明の磁石合金粉を見かけ密度85%以上に圧密化して得られた圧密磁石は、磁石合金粉の表面が適切な厚さの複合金属リン酸塩被膜によって均一に保護されているため、磁化が1.2T以上と十分高く、5%塩水中でも錆が見られないことが分かる。\n\nこれに対して、比較例のボンド磁石、圧密磁石は、金属リン酸塩被膜が複合化されていないか、被膜の厚さが適切ではないので、磁化、保磁力が小さいか、錆が発生することが分かる。\n\n【0090】\n\n【発明の効果】\n\n以上説明したように、本発明の磁石合金粉は、その表面を特定の金属リン酸塩が複合化した被膜によって均一に保護されているため、従来法により得られる磁石合金粉とは異なり、塩水に触れる環境下で錆が発生しない。この磁石合金粉を用いれば、耐塩水性ボンド磁石および圧密磁石の製造が可能となり、その工業的価値は極めて大きい。', '【0001】\n\n技术领域\n\n本发明涉及耐盐磁体合金粉末,制造方法,以及使用相同,粘结磁铁或紧凑型磁铁获得的粘合磁体的树脂组合物,以及甚至不会产生生锈的耐盐性在接触盐水的环境中。磁铁合金粉末,制造方法和粘结的磁体树脂组合物,粘合磁铁或使用该磁磁体。\n\n【0002】\n\n发明背景\n\n近年来,铁氧体磁铁,Alnico磁铁,稀土磁铁等内置为电动机或传感器,例如电机或传感器,包括一般家用电器,通信,声学设备,医疗设备,一般工业设备等,使用。这些磁铁主要由烧结产生,但它们是脆性的,并且它们难以薄,并且难以增加复杂形状的形状,因为它在烧结过程中缩小了15%至20%。后处理需要抛光等,对涂布表面具有重要限制。\n\n【0003】\n\n另一方面,粘结磁体(树脂偶联磁体)是热塑性树脂,例如聚酰胺树脂,聚苯硫醚树脂或热固性特性,例如环氧树脂,双马来酰亚胺树脂,不饱和聚酯树脂,乙烯基酯树脂等。由于树脂是粘合剂,并且磁铁合金粉末可以填充和容易制造,新的应用开发展开。\n\n【0004】\n\n当含有稀土元素的铁基磁体合金粉末用树脂粘合剂捏合以产生粘合磁体时,需要将磁体合金粉末研磨至约几μm。研磨在惰性气体或有机溶剂中进行,但磨削后的磁体合金粉末是极其活性的,并且当触及气氛时,氧化迅速提前,磁性降低,因此不处理轻微的氧气。采用一种引入和缓慢氧化的方法。\n\n【0005】\n\n在这些粘合磁体中,特别地,使用含有稀土元素的铁基磁体合金粉末的粘合磁体易于在盐水中生锈,从而在模制体的表面上形成诸如热固性树脂的涂膜。如在JP-A-2000-208321中通过抑制生锈并在日本专利公开No.2000-208321中公开,通过在模塑体的表面上施加含磷酸盐的涂料来抑制突出突出。。然而,即使在上述磁铁合金粉末的方法中,即使在盐水腐蚀的情况下,对于抑制锈病也没有充分令人满意。\n\n【0006】\n\n通常,在涂覆磁体合金粉末的情况下,将磷酸加入研磨溶剂中,并研究了在合金粉末表面上产生稀土或磷酸铁磷酸盐的方法。但是,尽管通过该方法生产的磁性合金粉末在高温高湿度环境中磁性度极低,但是当使用该粘合磁铁浸入盐水中24小时时,红色锈的发生稍微不可能减少但没有完全消除。\n\n【0007】\n\n近年来,在家用电器的电动机的情况下,汽车和汽车电机,船舶的运输等都需要在海外组装零件,并且使用环境和运输环境变得更加严重,而且为了使装置小型化,具有上述问题。磁特性也需要\n\n。\n\n【0008】\n\n由如上所述的含有稀土元素的铁基磁体合金粉末获得的粘合磁体的磁性不足用于这些应用,含有稀土元素的铁基磁性合金粉末的耐盐性早期改善强烈希望改善粘合磁体的磁性。\n\n【0009】\n\n而且,为了增加能量产物而不是粘合磁体,必须使磁体的表观密度接近磁体合金粉末的真实密度。尽管上述烧结方法是作为溶液方法的一般制造方法,但是还存在一种与热压缩成型方法合并的方法。例如,通过液态淬火方法制造的钕 - 铁 - 孔磁性合金粉末,具有热压,最大能量产品为112 kJ / m3制造了一定程度的各向同性致密磁体。\n\n【0010】\n\n此外,在钐 - 铁 - 氮基磁性合金粉末中,当加热至约600℃或更高时,拆卸钐 - 铁 - 氮基化合物,使“粉末和粉末冶金”47(2000)研究了各向同性热压缩成型方法(HIP),JP-A-6-077027和JP-A-2000-294415中公开的各向同性热压缩模塑方法(HIP),JP-A-6-077027和导电粉末压力应力的静电热压缩方法。\n\n【0011】\n\n即使在这些紧凑的磁体中,也可以获得磁性特性优异的磁体,诸如操作环境和运输环境的粗糙化与键合磁体的磁体相同,并且有必要改善耐盐性。另外,在使用常规磁体合金粉末制造紧凑型磁铁的情况下,钐 - 铁 - 氮基化合物的分解,金属键之间的金属键之间的金属键之间的反硝化或金属键合,或者固结磁铁的矫顽力低并且实际的材料仍然不足。\n\n【0012】\n\n本发明要解决的问题\n\n本发明的目的是提供一种耐盐磁性合金粉末,其中在上述现有技术的环境中不会发生锈病,以及用于制造与制造方法的防水的方法和通过使用获得的粘合磁体它和粘合磁体​​树脂组合物。它是提供磁铁或紧凑型磁体。\n\n【0013】\n\n[解决问题的手段]\n\n本发明人深入研究以解决上述问题,由于勤奋的研究,含有稀土元素的铁基磁铁合金粉末,金属磷酸盐和铝,锌,锰,铜,当两种金属磷酸薄膜时形成从钙的一个或多个金属磷酸盐形成,膜块盐水并抑制磁体合金粉的锈蚀,已经发现可以获得优异的磁体合金粉末,并且已经完成了本发明。\n\n【0014】\n\n也就是说,根据本发明的第一发明,在含有稀土元素超过20μm的稀土元素的铁基磁体合金粉末在含有磷酸,铝,锌,锰,铜,铜的有机溶剂中粉碎至平均粒径为8μm或更小的,在磷酸溶液之后,加入选自钙,复合氧化物,磷酸盐或磷酸盐化合物的一种或多种金属的氧化物,并搅拌溶液,磁体粉末(A)的磁体粉末(A)由含有稀土元素的铁基磁性合金粉末组成,铁和稀土元素的金属磷酸盐(B-1)(B-1),以及铝,锌,锰,铜或钙的复合金属磷酸盐涂层(B)由选自一种或多种金属磷酸盐(B-2),金属磷酸盐(B-2)的金属组分组成。但30重量%或更多的金属组分复合金属磷酸涂层(B)形成复合金属磷酸盐涂料耐盐磁铁膜粉末制造方法提供。\n\n【0015】\n\n此外,根据本发明的第二发明,在第一发明中,复合金属磷酸涂层(B\n\n用于耐盐性的薄膜粉末,其特征在于厚度为5至100nm)。制造方法提供。\n\n【0019】\n\n此外,3根据本发明,1或2在本发明中,有机溶剂是选自N,N-二甲基甲酰胺,甲酰胺,2-甲氧基乙醇,乙醇,甲醇或异丙醇中的一种或多种。提供。\n\n【0020】\n\n此外,4根据本发明,1到3中的一个在本发明的发明中,形成磷酸盐溶液的金属组分以0.01至1mol / kg(每粉末重量)的速率加入含有稀土元素的铁基磁性合金粉末。一种生产含水的方法提供磁铁合金粉末。\n\n【0021】\n\n此外,这是5根据本发明,1到4中的一个在本发明的发明中,以0.1至2mol / kg(粉末重量)的比例加入含有稀土元素的铁基磁性合金粉末的比例。提供。\n\n【0025】\n\n发明内容\n\n在下文中,将详细描述本发明的耐盐磁体合金粉末,制造该方法,以及使用该制造方法,以及粘结的磁性树脂组合物,键合磁铁或紧凑型磁铁。\n\n【0026】\n\n1.耐盐磁铁\n\n本发明的耐盐性耐磁体合金粉末形成涂层(B),其中特定金属磷酸盐在磁体合金粉末(A)的表面上是复合材料,该磁性合金粉末(A)由含有稀土的铁基磁铁合金粉末组成元素。它是一种耐盐磁性合金粉末。\n\n【0027】\n\n磁铁金粉\n\n磁体合金粉末没有特别限制,只要它是含有稀土元素的铁基磁体合金的粉末即可。作为稀土 - 铁基磁性合金粉末,例如稀土 - 铁 - 硼系统,稀土 - 铁 - 氮系统等,可以使用各种磁铁合金粉末,如稀土 - 铁氮系统,其中,优选稀土铁 - 铁系统的磁铁粉末。是。稀土元素包括SM,Nd,Pr 2,Y,La,Ce,Gd等,并且可以单独使用或作为混合物使用。其中,特别优选的是,SM或Nd为5至40.%,Fe,50至90at。%优选。\n\n【0028】\n\n希土類-鉄系磁石合金粉には、フェライト、アルニコなど、ボンド磁石や圧密磁石の原料となる各種磁石合金粉を混合してもよく、異方性磁石合金粉だけでなく、等方性磁石合金粉も対象となるが、異方性磁場(HA)が、4.0MA/m以上の磁石合金粉が好ましい。\n\n【0029】\n\nまた、ボンド磁石や圧密磁石の原料となるため、磁石合金粉の平均粒径は、8μm以下、特に5μm以下であることが望ましい。平均粒径が8μmを超えると、成形性が悪化するので好ましくない。\n\n【0030】\n\nB 複合金属リン酸塩被膜\n\n本発明の磁石合金粉は、その表面が鉄と希土類元素の金属リン酸塩(b-1)、及びアルミニウム、亜鉛、マンガン、銅又はカルシウムのいずれか1種以上を含む金属のリン酸塩(b-2)が複合化した被膜で均一に被覆されている。ここで、均一に被覆されるとは、磁石合金粉表面の80%以上、好ましくは85%以上、さらに好ましくは90%以上が複合金属リン酸塩被膜で覆われていることをいう。\n\n【0031】\n\n金属リン酸塩(b-1)は、リン酸サマリウム、リン酸鉄などで、これは磁石合金粉を構成する希土類や鉄にリン酸が反応して形成されたものである。\n\n一方、金属リン酸塩(b-2)は、例えば、リン酸アルミニウム、リン酸亜鉛、リン酸マンガン、リン酸銅、リン酸カルシウム又はこれらが2種以上複合した金属塩などである。これらアルミニウム、亜鉛、マンガン、銅およびカルシウム以外に、クロム、ニッケル、マグネシウムなどの金属リン酸塩が含まれていてもかまわない。\n\n【0032】\n\n金属リンリン(B-1)と,金属リン酸塩(b-2)とがとが合金した金属リン酸塩は,树脂バインダーとの结は,树脂バインダーとの合力を高度,磁石合金の耐塩水性を高分成分是。但し、充分な耐塩水性を得るためには、金属リン酸塩(b-2)の金属成分、すなわちアルミニウム、亜鉛、マンガン、銅又はカルシウムから選択された1種以上が、複合金属リン酸塩被膜(B)の金属成分に対して、30重量%以上、特に50重量%以上、より好ましくは80重量%以上含まれた複合金属リン酸塩とする。\n\n【0033】\n\n複合金属リン酸塩被膜は、平均で5〜100nmの厚さが必要である。平均厚さが5nm未満であると十分な耐塩水性が得られず、一方、100nmを越えると磁気特性が低下し、またボンド磁石を作製する際には混練性や成形性が低下する。\n\n【0034】\n\nこの磁石合金粉を樹脂バインダーと混合してボンド磁石を作製した場合、海水の塩分濃度付近である5%塩水中に24時間浸漬しても、ボンド磁石に赤錆は全く生じない。また磁石合金粉を圧密化した磁石についても、同様に高い耐塩水性を示す。\n\n【0035】\n\n2.耐塩水性磁石合金粉の製造方法\n\n本発明の耐塩水性磁石合金粉を製造するには、希土類元素を含む鉄系磁石合金粉を、一段階で複合リン酸塩化するか、二段階で複合リン酸塩化するかで区別される二通りの方法がある。\n\n【0036】\n\n希土類元素を含む鉄系磁石合金粉を、一段階で複合リン酸塩化する方法とは、平均粒径20μmを超える希土類元素を含む鉄系磁石合金粉を、有機溶媒中で、平均粒径8μm以下に粉砕する際、少なくともアルミニウム、亜鉛、マンガン、銅又はカルシウムから選ばれた1種以上の金属の酸化物、複合酸化物、リン酸塩又はリン酸水素化合物と、リン酸を添加した後、該溶液を攪拌する方法である。\n\n【0037】\n\n先ず、平均粒径20μmを超える希土類元素を含む鉄系磁石合金の粉末に、有機溶媒を加え、磁石合金粉の粉砕前、あるいは粉砕在〜に、アルミニウム、亜鉛、マンガン、銅又はカルシウムから選ばれた1種以上の酸化物、リン酸塩又はリン酸水素化合物の1種以上からなる金属成分を添加する。該金属成分がリン酸塩又はリン酸水素化合物以外の場合、及びリン酸塩又はリン酸水素化合物が有機溶媒に溶解し難い場合には、リン酸を添加して、攪拌を続ける。攪拌は、通常1〜180分間続行する。\n\n【0038】\n\n金属成分は、アルミニウム、亜鉛、マンガン、銅又はカルシウムなどのイオンの供給源であり、有機溶媒に溶け金属イオンを生成する酸化物、複合酸化物、リン酸塩又はリン酸水素化合物などの金属化合物である。\n\n【0039】\n\n有機溶媒としては、特に制限はなく、2-メトキシエタノール、イソプロピルアルコール、エタノール、トルエン、メタノール、ヘキサン等のいずれか1種または2種以上の混合物を用いると良い。但し、メタノールは、リン酸と速やかに反応してエステル化し、良好な被覆が形成されるのを妨げる恐れがあるので取り扱いには注意を要する。\n\n【0040】\n\n前記の金属成分が容易に金属イオンを生成し、磁石合金粉の溶解を適度に調整するために\n\nは、N,N-ジメチルホルムアミド、ホルムアミド等の極性溶媒を混合することが望ましい。また、磁石合金粉の溶解を促進するために、有機溶媒に水や酸を混合しても良い。\n\n【0041】\n\nアルミニウム化合物としては、アルミニウムイオンの供給源となり、有機溶媒に溶ける化合物であれば、特に制限されず、例えば、酢酸アルミニウム、硫酸アルミニウム、塩化アルミニウム、塩化アルミニウムアンモニウム、安息香酸アルミニウム、炭酸アルミニウム、エチルアセト酢酸アルミニウム、ぎ酸アルミニウム、水酸化アルミニウム、硝酸アルミニウム、ナフテン酸アルミニウム、オレイン酸アルミニウム、しゅう酸アルミニウム、酸化アルミニウム、リン酸アルミニウム、リン酸水素アルミニウム、塩化カリウムアルミニウム、ステアリン酸アルミニウム、硫化アルミニウム、フタロシアニンアルミニウム、又は酒石酸アルミニウムが例示される。特に好ましいのは、リン酸アルミニウム、あるいはリン酸水素アルミニウムである。\n\n【0042】\n\n亜鉛化合物としては、亜鉛イオンの供給源となり、有機溶媒に溶ける化合物であれば、特に制限されず、例えば、酢酸亜鉛、硫酸亜鉛、塩化亜鉛、塩化亜鉛アンモニウム、安息香酸亜鉛、炭酸亜鉛、エチルアセト酢酸亜鉛、ぎ酸亜鉛、水酸化亜鉛、硝酸亜鉛、ナフテン酸亜鉛、オレイン酸亜鉛、しゅう酸亜鉛、酸化亜鉛、リン酸亜鉛、リン酸亜鉛四水和物、リン酸水素亜鉛、リン酸亜鉛カルシウム、塩化カリウム亜鉛、ステアリン酸亜鉛、硫化亜鉛、フタロシアニン亜鉛、又は酒石酸亜鉛が例示される。特に好ましいのは、酸化亜鉛、リン酸亜鉛四水和物、或いはリン酸水素亜鉛である。\n\n【0043】\n\nマンガン化合物としては、マンガンイオンの供給源となり、有機溶媒に溶ける化合物であれば、特に制限されず、例えば、酢酸マンガン、硫酸マンガン、塩化マンガン、塩化マンガンアンモニウム、安息香酸マンガン、炭酸マンガン、エチルアセト酢酸マンガン、ぎ酸マンガン、水酸化マンガン、硝酸マンガン、ナフテン酸マンガン、オレイン酸マンガン、しゅう酸マンガン、酸化マンガン、リン酸マンガン、リン酸水素マンガン、塩化カリウムマンガン、ステアリン酸マンガン、硫化マンガン、フタロシアニンマンガン、又は酒石酸マンガンが例示される。特に好ましいのは、酸化マンガン、或いはリン酸水素マンガンである。\n\n【0044】\n\nまた、銅化合物としては、銅イオンの供給源となり、有機溶媒に溶ける化合物であれば、特に制限されず、例えば、酢酸銅、硫酸銅、塩化銅、塩化銅アンモニウム、安息香酸銅、炭酸銅、エチルアセト酢酸銅、ぎ酸銅、水酸化銅、硝酸銅、ナフテン酸銅、オレイン酸銅、しゅう酸銅、酸化銅、リン酸銅、リン酸水素銅、塩化カリウム銅、ステアリン酸銅、硫化銅、フタロシアニン銅、または酒石酸銅などが用いられる。特に好ましいのは、酸化銅(I)、或いはリン酸水素銅である。\n\n【0045】\n\nさらに、カルシウム化合物としては、カルシウムイオンの供給源となり、有機溶媒に溶ける化合物であれば、特に制限されず、例えば、酢酸カルシウム、硫酸カルシウム、塩化カルシウム、塩化カルシウムアンモニウム、安息香酸カルシウム、炭酸カルシウム、エチルアセト酢酸カルシウム、ぎ酸カルシウム、水酸化カルシウム、硝酸カルシウム、ナフテン酸カルシウム、オレイン酸カルシウム、しゅう酸カルシウム、酸化カルシウム、リン酸カルシウム、リン酸水素カルシウム、塩化カリウムカルシウム、ステアリン酸カルシウム、硫化カルシウム、フタロシアニンカルシウム、又は酒石酸カルシウムが例示される。特に好ましいのは、酸化カルシウム、或いはリン酸水素カルシウムである。\n\n【0046】\n\n金属成分であるアルミニウム、亜鉛、マンガン、銅又はカルシウムから選ばれた1種以上の金属の酸化物、複合酸化物、リン酸塩又はリン酸水素化合物は、粉砕する磁石合金粉の粒径、表面積等に合わせて最適量を添加するが、該磁石合金粉に対して、0.01〜1mol/kg(粉末重量当たり)とする。すなわち、0.01mol/kg未満であると磁\n\n石合金粉の表面が十分に被覆されないために耐塩水性が改善されず、1mol/kgを超えると磁化の低下が著しくなり、磁石としての性能が低下する。\n\n【0047】\n\n上记の金属化合物は,溶媒中でイオン化,磁石料金粉の成分である希土金属や鉄が溶媒にともない,磁石合金粉のでして金属リンがが反応て金粉酸塩が复した酸塩做。\n\n【0048】\n\n作为磷酸,可以使用与金属化合物反应的正磷酸,以产生金属磷酸盐,磷酸,次磷酸,焦磷酸,线性多磷酸,环状偏磷酸可以使用。也可以使用磷酸铵,磷酸铵镁等。这些化合物可以单独或组合组合,并且通常与螯合剂,中和剂等混合待处理。\n\n【0049】\n\n其中,虽然正磷酸表现出优选的性能,但原因是,这容易与上述金属化合物反应,并且可以容易地在含有稀土化金属的磁体组合粉末表面上形成保护膜。有可能。\n\n【0050】\n\n将磷酸添加到磁体合金粉末,表面积等的粒度中,但通常为粉碎磁体合金粉末的0.1至2mol / kg(每粉末重量),优选为0.15〜5mol / kg,更优选为0.2至0.4mol / kg。\n\n【0051】\n\n也就是说,如果它小于0.1摩尔/千克,则磁体合金粉末的表面不充分涂覆,并且耐盐性不会改善,并且当在大气中干燥时,氧化/加热极低,磁性属性极为减少。如果超过2 mol / kg,则剧烈使磁性合金粉末的反应溶解溶解磁体合金粉末。\n\n【0052】\n\n磷酸的浓度没有特别限制,使用无水磷酸,50至99%的磷酸水溶液(例如,85%磷酸水溶液,75%磷酸水溶液)等。另外,有机溶剂没有特别限制,但使用醇如乙醇或异丙醇等,酮,低碳氢化合物,芳烃或其混合物。然而,甲醇需要注意处理,因为它可以用磷酸酯化,以防止良好的涂层形成良好的涂层。\n\n【0053】\n\n如果添加金属组分,如果磁体粉末研磨,则在研磨前溶剂总是良好的,在溶剂中熔化,以及在研磨过程中加入一次的方法,逐渐加入的方法等。\n\n【0054】\n\n结果,构成磁铁在研磨过程中溶解的元件,构成诸如铁的磁铁的元件形成磷酸盐,并加入其中的金属化合物也是反应的,并且复合金属磷酸盐覆盖磁性合金粉末。。为了完成反应并形成足够的膜厚度的涂层,取决于金属化合物的类型,优选3至150分钟,优选3至150分钟,更优选为5至60分钟。研磨,保留时间是必需的。\n\n【0055】\n\n超过平均粒径为20μm的铁基磁铁合金粗粉末粉碎至8μm或更小,优选1至5μm的平均粒径。\n\n【0056】\n\n形成复合磷酸盐涂层的第二种方法首先含有含有磷酸的有机溶剂中的磁性合金粉末,以赋予合金粉末,然后将金属化合物加入该磷酸盐溶液中。它是一种搅拌方法。\n\n【0057】\n\n有机溶剂的类型,磷酸和金属组分的添加量等是与第一种方法相同的条件。在第二种方法中,盐度电阻优异的金属磷酸盐(B-2)比金属磷酸盐(B-1)形成,因此更好的复合金属磷酸盐涂层是更有利的,因为它是获得的。\n\n【0058】\n\n其中,涂有任何湿法加工方法的涂覆的磁铁合金粉末,然后加热和干燥以将表面的表面固定到磁体合金粉末。即,在膜形成后,将处理溶液和磁性合金粉末在真空烘箱中在真空烘箱中干燥1至30小时。优选在惰性气体或真空中进行热处理。当热处理在小于100℃时施加热处理时,磁体合金粉末的干燥足够进展,并且抑制稳定表面涂层的形成,并在大于500℃的温度下进行热处理,磁铁合金粉末是热的。存在通过接受损坏而显着降低的矫顽力。\n\n【0059】\n\n在必要时,形成形成金属磷酸盐涂层的耐盐磁性合金粉末,例如,从各种偶联剂如硅烷,铝酸盐系统和钛酸钛体系中选择,并且可以使用从各种偶氮系统中选择一种或多种类型。\n\n【0060】\n\n3.粘结磁体树脂组合物和粘合磁体\n\n通过将热塑性树脂或热固性树脂作为树脂粘合剂混合到涂有金属磷酸盐的耐盐磁体合金粉末,可以容易地制造本发明的粘合磁体。\n\n【0061】\n\n树脂粘合剂是用作磁体粉末的粘合剂的组分,热塑性树脂,例如聚酰胺树脂,聚苯硫醚树脂或环氧树脂,双 - 马来酰亚胺树脂,不饱和聚酯树脂,乙烯基酯树脂,固化反应型可以使用热固性树脂,例如硅橡胶,但特别是热塑性树脂是优选的。\n\n【0062】\n\n热塑性树脂没有特别限制,可以使用那些称为常规树脂粘合剂的那些。\n\n热塑性树脂的具体实例包括6个尼龙,6,6尼龙,11尼龙,12尼龙,6,12尼龙,芳族尼龙,聚酰胺树脂,如改性尼龙与这些分子;线性型聚苯硫醚树脂,可交联的聚苯硫醚树脂,半交联聚苯硫醚树脂;低密度聚乙烯,线性低密度聚乙烯树脂,高密度聚乙烯树脂,超高分子量聚乙烯树脂,聚丙烯树脂,乙烯 - 乙酸乙酯共聚物树脂树脂乙烯 - 乙基丙烯酸酯共聚物树脂,离聚物树脂,聚甲基戊烯树脂;聚苯乙烯树脂,丙烯腈 - 丁二烯 - 苯乙烯共聚物树脂,丙烯腈 - 苯乙烯共聚物树脂;聚氯乙烯树脂,聚氯乙烯树脂,聚乙酸乙烯酯树脂聚乙烯醇树脂,聚乙烯丁酯树脂,聚乙烯基正规树脂;甲基丙烯树脂;聚偏二氟乙烯树脂,聚偏其乙烯氯化物树脂,乙烯 - 六水合丙烯共聚树脂,乙烯 - 四亚磷酸酯共聚树脂,乙烯 - 全氟烷基乙烯基醚共聚物树脂,聚四氟乙烯树脂;聚碳酸酯树脂,聚缩醛树脂,聚对苯二甲酸乙二醇酯树脂,聚亚苯二甲酸乙二醇酯树脂,聚亚芳基醚烯丙基砜树脂可提及聚醚砜树脂,聚醚醚酮树脂,聚芳基甲酸盐树脂,芳族聚酯树脂,乙酸纤维素树脂和上述各种树脂的弹性体。可提及与其他物质等的共聚物,接枝共聚物,末端组改性产物等。\n\n【0063】\n\n这些热塑性树脂优选在所需的粘合磁体中获得所需机械强度的范围内具有低熔体粘度和分子量。另外,热塑性树脂的形状没有特别限制,例如粉末状,串珠,颗粒形状,但在磁铁合金粉末均匀混合的点中,它是粉末。\n\n形状是理想的。\n\n【0064】\n\n相对于100重量份的磁性合金粉末,热塑性树脂的混合量通常为5至100重量份,优选5至50重量份。如果热塑性树脂的混合量小于5重量份,则组合物的捏合电阻(扭矩)变大,流动性降低,并且磁体的模塑变得困难,并且如果它超过100重量份,不能获得所需的磁性。\n\n【0065】\n\n如果是热固性树脂,则两种液体形式是有利的,从可操作性和罐寿命中有利,并且在混合两个液体之后,可以在常温至200℃的温度下固化的那些。反应机理可以是一般添加聚合型或缩合聚合物。另外,即使必要时,也可以加入交联反应型单体如过氧化物或低聚物。\n\n【0066】\n\n这些不限于聚合或分子量,但在固化剂的最终混合状态和其他添加剂等中,用ASTM 100 leometer测量的150℃下的动态粘度·S或更低,优选为400Pa·s或更少,特别优选为100至300Pa·s。当动态粘度超过500Pa·s时,不是优选的,因为它导致显着的捏合扭矩,流动性降低,并且变得难以模具。另一方面,如果动态粘度变得太小,则希望在模塑时容易分离磁粉和树脂粘合剂,所以希望为0.5Pa·s或更高。\n\n【0067】\n\n相对于100重量份的磁性合金粉末,以3至50重量份的比例加入树脂粘合剂。添加量更优选为7至30重量份,更优选为10至20重量份。如果它小于3重量份,则提高了显着的捏合扭矩,减少了流动性的降低,并且难以模塑,而如果它超过50重量份,则不优选所需的磁性特性不获得。\n\n【0068】\n\n在本发明的树脂粘合剂中,可以加入润滑剂,紫外线吸收剂,阻燃剂,各种稳定剂等。\n\n【0069】\n\n润滑剂是,例如,石蜡,液体石蜡,聚乙烯蜡,聚丙烯蜡,酯蜡,karuna血管,微针等;硬脂酸,1,2-氧性酸,月桂酸,棕榈酸,油酸等。脂肪酸;硬脂酸钙,硬脂酸钡,硬脂酸镁,硬脂酸锂,硬脂酸锌,硬脂酸钙,硬脂酸钙,格里啉酸钙,光胆酸,酚酸,锌蓖麻油酸,2-乙基己烷锌等(金属肥皂)捕获;硬脂酸酰胺,糖酸酯,赤铁矿酰胺,棕榈酸酰胺,月桂酸酰胺,羟基二酯酰胺,亚甲基双硬脂酸酰胺,乙烯双硬脂酸酰胺,乙二醇酰胺,脂肪酸酰胺,脂肪酸酰酰己二酰胺酰胺。酰胺,乙烯双覆盖酰胺,Dioleryl己二酸酰胺,N-硬脂酸酰胺;脂肪酸酯如硬脂酸丁酯;乙二醇,醇,如硬脂醇;聚乙二醇;聚乙二醇,聚荷芳基二醇和聚醚组成改性剂;聚硅氧烷如二甲基聚硅氧烷,硅氧烷租赁;氟化合物如氟基油,氟基润滑脂,含氟粉末,氮化硅,也包括碳化硅,氧化镁,氧化铝,二氧化硅,二氧化硅等无机化合物粉末和二硫化钼。这些润滑剂可以与两种或更多种或更多种或更多种或更多种。相对于100重量份的磁性合金粉末,锁定剂的混合量通常为0.01至20重量份,优选0.1至10重量份。\n\n【0070】\n\n作为紫外线吸收剂,苯并三唑体系如苯甲酮体系,如苯胱氨酸酯; 2-(2\'-羟基-5\'-甲基苯基)苯并三唑等;\n\n可以提及硝化镍衍生物等。\n\n【0071】\n\n此外,作为稳定剂,双(2,2,6,6-四甲基-4-哌啶基)Spacate,BIS(1,2,2,6,6,6-五甲基-4-哌啶基)Spacate,1- [ 2  -  {3-(3,5-二叔 - 丁基-4-羟基苯基)丙酰氧基}乙基] -4- {3-(3,5-二叔 - 丁基-4-羟基苯基)丙酰氧基} -2, 2,6,6-四甲基哌啶,8-苄基-7,7,9,9-四甲基-3-辛基-1,2,3-Triosa螺纹[4,5] Undecan-2,4-二酮,4-苯甲酰氧基-2,2,6,6-四甲基哌啶,二甲基-1-(2-羟乙基)-4-羟基-2,2,2,6,6-四甲基哌啶缩聚物,聚氯乙烯[[[6-(1,1,3, 3-四甲基丁基)氨基-1,3,5-三嗪-2,4-二基] [(2,2,6,6-四甲基-4-哌啶基)咪诺]六亚甲基[[2,2,6,6-四甲基-4-哌啶基)亚氨基]],2-(3,5-二叔 - 丁基-4-羟基苄基)-2-N-除了受阻胺基稳定剂,如双(1,2,2,可列举出6,6-五甲基-4-哌啶基),可列举出抗氧化剂,如酚,亚磷酸盐和硫醚体系等。。这些稳定剂也可以与两种以上组合。相对于100重量份的磁性合金粉末,稳定剂的复合量通常为0.01至5重量份,优选0.05至3重量份。\n\n【0072】\n\n混合方法没有特别限制,例如,带搅拌器,翻转器,虹膜混合器,Henshell混合器,混合器,例如超级混合器,行星混合器或撞击器,捏合机,卷筒,卷筒,a捏合机舵,单螺杆挤出机,可以使用捏合机,例如双螺杆挤出机。\n\n【0073】\n\n接下来,将粘合的磁体组合物形成为在加热并在其熔化温度下熔化后具有所需形状的磁体。当时,作为模塑方法,各种成型方法,如注射成型方法,挤出成型方法,注射压缩成型方法,注射压缩成型方法,注射压缩成型方法,注射压缩法,注射压制成型方法,转印成型方法,通常用作模塑方法,以及各种模塑方法,如注射压缩成型方法和转移模塑方法。其中,特别是注塑方法,挤出成型方法,注射压缩成型方法和注射压制成型方法是优选的。\n\n【0074】\n\n热固性树脂优选使用具有弱剪切力并且具有冷却功能的混合器,使得固化不根据混合时的剪切发热等进行。由于组合物通过混合浓缩,因此通过注射成型方法,压缩成型方法,挤出方法,轧制成型方法,转印成型方法等模制。\n\n【0075】\n\n由此获得的粘合磁体不会引起缺陷,使复合金属磷酸涂层在实际上重要的高温环境中并且不影响盐水。传统上,在磁体合金粉末中,显示诸如钐 - 铁 - 氮基合金磁铁的成核型矫顽力表达机制,存在存在这种缺陷面积在某些情况下发生这种问题的问题缺陷区域。然而,根据本发明,这些问题是完全克服的。\n\n【0076】\n\n4.争夺磁铁\n\n制造紧凑型磁体的方法没有特别限制,施加高压缩力,表观密度可以是具有高压缩力的方法。如果表观密度小于85%,则磁性较低,通过开放的泊来降低耐盐性,即氧气和水分的路径是磁体合金粉末的降解因子。\n\n尽管本发明的磁体合金粉末表现出高耐盐性,但是通过消除固结磁体的开口孔可以实现更高的耐盐性。\n\n【0077】\n\n另外,在从本发明的钐 - 铁 - 氮基磁性合金粉末制造紧凑型磁体的情况下,改善了磁性特性,特别是磁体的矫顽力,特别是所述耐盐性。当固结时,可以防止降解沙铵 - 铁 - 氮的化合物和反硝化,并且非磁性磷酸盐涂层在颗粒之间均匀存在,从而可以防止矫顽力劣化。\n\n【0078】\n\n【例子】\n\n在下文中,将通过实施例和比较例具体描述本发明,但本发明不受这些实施例的限制。\n\n【0079】\n\n(1)组件\n\n磁铁金粉\n\n·SM-FE-N基磁性合金粉末[Sumitomo金属矿业有限公司,平均粒径:30μm]\n\n有机溶剂\n\n·异丙醇(IPA)[KANTO Chemical Co.,Ltd。]\n\nN,N-二甲基甲酰胺(DMF)[Kanto Chemical Co.,Ltd。]\n\n添加剂(涂料组分)\n\n氧化锌【Kanto Chemical Co.,Ltd。]\n\n·磷酸锌四水合物[Kanto Chemical Co.,Ltd。]\n\n·磷酸铝【KANTO化工有限公司]\n\nMangan氧化物[凯托化工有限公司制造]\n\n铜氧化铜(I)【Kanto Chemical Co.,Ltd。]\n\n·氧化钙[Kanto Chemical Co.,Ltd。]\n\n磷酸\n\n·85%酸酐水溶液[产品名称:磷酸,由Kanto Chemical Co.,Ltd。制造]\n\n【0080】\n\n(2)测量特性,涂层磁性合金粉的性能,评价。\n\n·金属厚度和金属磷酸盐(B-2)金属组分复合复合磷酸涂层(B)\n\n用Fe-TEM(场发射型透射电子显微镜)观察所获得的磁体组合粉末样品的横截面以测量膜厚度。此外,通过TEM-EDX(能量分散型荧光X射线分析仪进行涂料组合物分析,并测定金属磷酸盐(B-2)涂层的金属组分与复合磷酸盐涂层(B)的比率。\n\n【0081】\n\n·梅勒抵抗\n\n将所得磁体组合粉末样品和尼龙12在泡杆磨机中在200℃下捏合30分钟,并在空气冷却后,通过塑料破碎机粉碎每个组合物并用作模塑颗粒。通过注射成型机在7mm方向上,在7mm方向上以10mm×7mm的对准磁场产生10mm×7mm的圆柱形稀土基磁体。将其浸入5%的NaCl水溶液中至一半的成型体中,使得在室温下静置24小时,目视观察到生锈的存在或不存在。\n\n【0082】\n\n·磁性表征评估\n\n通过智能型自束在常温下测量上述圆柱形稀土基磁体样品的磁性。表1和2显示了磁性特性的残余磁化强度(Br)的结果。\n\n【0083】\n\n例1到7\n\n将1kg还原磁体合金粉末(SM-FE-N系统)的磁体混合物在1kg还原磁体合金粉末(SM-FE-N系统)的有机溶剂中研磨2小时,其转速为200 RPM使用其中容器内部被氮气替换的蒸汽机,平均粒径为3μm。我制作它。根据表1的描述将预定量的85%正磷酸盐水溶液,氧化物,磷酸盐等加入合金粉末中并搅拌。之后,磁铁合金粉末在150℃的真空下在4点钟处为4点钟\n\n干燥干燥。测量所得磁体组合粉末的膜厚度,并测定金属组分与金属磷酸盐(B-2)涂层的复合磷酸盐涂层(B)的比率,得到表1的结果。\n\n次に、得られた磁石合金粉を用いて、磁粉体積率が60%となるように、12ナイロンを添加し、ラボプラストミルで混練後に、200℃にて射出成形してボンド磁石を作製した。得られた磁石試料の磁化を上記方法で測定し、表1の結果を得た。\n\n【0084】\n\n【表格1】\n\n\n\n【0085】\n\n[比較例1〜4]\n\n添加剤を用いないか、添加剤やリン酸の量を変えて、上記の実施例と同様にして、磁石合金粉を処理した。结果如表1所示。\n\n【0086】\n\n[実施例8〜14]\n\n実施例1〜7で用いた磁石合金粉10gを、窒素雰囲気下でアルミニウムカプセルに充填し、1600kA/mの配向磁界をかけながら50MPaで一軸加圧した。次に、この圧粉体をカプセルごと450℃、30min.、200MPaで等方性熱間圧縮法(HIP)で成形した。圧力媒体として窒素ガスを用いた。得られた磁石試料の磁化を測定し、表2の結果を得た。ここで見かけ密度は、真密度を7.67g/ccとした相対密度で表している。\n\n【0087】\n\n[表2]\n\n\n\n【0088】\n\n[比较例5-8]\n\n比較例1〜4で用いた磁石合金粉から、実施例8〜14に示した方法により等方性熱間圧縮法(HIP)で成形して圧密磁石を作製した。结果显示在表2中。\n\n【0089】\n\n表1から、本発明の磁石合金粉を成形して得られたボンド磁石は、磁石合金粉の表面が適切な厚さの複合金属リン酸塩被膜によって均一に保護されているため、磁化が0.7T以上であり、かつ5%塩水中でも錆の発生がないことが分かる。\n\nまた、表2から、本発明の磁石合金粉を見かけ密度85%以上に圧密化して得られた圧密磁石は、磁石合金粉の表面が適切な厚さの複合金属リン酸塩被膜によって均一に保護されているため、磁化が1.2T以上と十分高く、5%塩水中でも錆が見られないことが分かる。\n\nこれに対して、比較例のボンド磁石、圧密磁石は、金属リン酸塩被膜が複合化されていないか、被膜の厚さが適切ではないので、磁化、保磁力が小さいか、錆が発生することが分かる。\n\n【0090】\n\n【发明效果】\n\n以上説明したように、本発明の磁石合金粉は、その表面を特定の金属リン酸塩が複合化した被膜によって均一に保護されているため、従来法により得られる磁石合金粉とは異なり、塩水に触れる環境下で錆が発生しない。この磁石合金粉を用いれば、耐塩水性ボンド磁石および圧密磁石の製造が可能となり、その工業的価値は極めて大きい。');
INSERT INTO `os_patent_instruction_text` VALUES (12926, 22755, 'TECHNICAL FIELD\n\n[0001]The present invention relates to a copper plating solution and a method for copper plating, which stably provide a uniform copper plating film excellent in adhesion on the surface of an article to be plated, such as rare earth metal-based permanent magnet.\n\nBACKGROUND ART\n\n[0002]Rare earth metal-based permanent magnets such as R—Fe—B based permanent magnets, which are represented by Nd—Fe—B based permanent magnet, possess high magnetic properties and are now utilized in various fields. In particular, bonded magnets using magnetic powder and resin binders as the principal components are excellent in dimensional precision and can be easily tailored into desired shapes or into monolithic molding. Therefore, a variety of shaped bonded magnets such as ring-shaped magnet are used widely in electronic appliances and the like.\n\n[0003]However, rare earthmetal-based permanent magnets contain metallic species (particularly R) prone to oxidative corrosion under the atmosphere. Thus, in case they are used without applying surface treatment, corrosion proceeds from the surface due to the effect of acids, alkalis, water, and the like that are slightly present in air, and rust generates as a result. This causes deterioration or fluctuation in magnetic properties. Moreover, in case rust generates on magnets assembled in devices such as magnetic circuits, it is feared that rust is scattered to contaminate peripheral components. Accordingly, in case of using rare earthmetal-based permanent magnets, it is required to impart corrosion resistance to the magnet.\n\n[0004]Various methods are proposed to present for imparting corrosion resistance to an article to be plated, e.g., a rare earth metal-based permanent magnet, and a method of forming copper plating film on a surface of an article to be plated by electroless plating method is one of such methods.\n\n[0005]In the copper plating method using electroless plating method, generally employed is the chemical reduction plating method, which comprises adding a reducing agent in a copper plating solution containing copper sulfate and ethylenediaminetetraacetic acid as the principal components, and then, by using the reducing agent, selectively depositing copper ions in the copper plating solution on a catalyst-activated surface of the article to be plated. According to this method, the copper deposition reaction continues so long as the copper deposit remains catalytically active with respect to the oxidation reaction of the reducing agent. Thus, a copper plating film of desired film thickness can be formed on the surface of the article to be plated in accordance with the time duration of immersing the article in the copper plating solution. In this method, formaldehyde is generally used as the reducing agent in an alkaline bath condition.\n\n[0006]As a method for forming a copper plating film on the surface of an article to be plated, the copper plating method employing chemical reduction plating method as described above is of high practical value. However, in case of the reductive deposition reaction using formaldehyde, gaseous hydrogen generates according to the reaction mechanism. The bubbles of gaseous hydrogen negatively influence the adhesion of copper plating film onto the articles to be plated, particularly those having concave portions such as voids on the surface, such as bonded magnets. Moreover, in case of the articles to be plated that undergo hydrogen embrittlement, such as rare earth metal-based permanent magnets, gaseous hydrogen casts unfavorable effects to the articles themselves.\n\n[0007]Accordingly, an object of the present invention is to provide a copper plating solution and a method for copper plating that stably allow formation of a uniform copper plating film excellent in adhesion on the surface of an article to be plated, such as rare earth metal-based permanent magnet.\n\nDISCLOSURE OF THE INVENTION\n\n[0008]In the light of the aforementioned circumstances, the present inventors have made extensive studies, and instead of the chemical reduction plating method using a reducing agent such as formaldehyde, they paid attention to the classical ion exchange method, in which copper deposits are formed on the surface of the article to be plated without using any reducing agent, and is based on the exchange reaction of metallic ions. As the copper plating solutions for use in the ion exchange method, known is such containing copper sulfate and ethylenediaminetetraacetic acid as the principal components; however, since the solution is acidic with the pH value in a range of from 4 to 5, it is not applicable to rare earthmetal-based permanent magnets that are not stable under acidic conditions. It is possible to adjust the pH of the solution in a neutral region by adding sodium hydroxide and the like; however, it has been found that, in case such copper plating solution is used by adjusting the pH of the solution in a neutral region, there occurs problems as such that the growth rate of the copper plating film by the deposition of copper becomes too low, or that the resulting plating film suffers inferior adhesion properties with respect to the rare earth metal-based permanent magnet. Accordingly, further studies have been conducted, and it has been found that, by adding sulfite in a copper plating solution containing copper sulfate and ethylenediaminetetraacetic acid as the principal components, with the content of each of the components adjusted to a predetermined composition and the pH adjusted in a predetermined range, the resulting copper plating solution is applicable to articles such as rare earth metal-based permanent magnets, and that it is capable of stably forming a uniform copper plating film excellent in adhesion on the surface of the article to be plated.\n\n[0009]The present invention has been made based on the above findings, and the copper plating solution according to the present invention is, characterized by that it comprises 0.03 mol/L to 0.5 mol/L of copper sulfate, 0.05 mol/L to 0.7 mol/L of ethylenediaminetetraacetic acid and 0.02 mol/L to 0.3 mol/L of sulfite, and has a pH adjusted to 5.0 to 8.5.\n\n[0010]The copper plating solution is characterized by that it is a copper plating solution as described above wherein the sulfite is sodium sulfite and/or potassium sulfite.\n\n[0011]The method for copper plating an article to be plated according to the present invention is, characterized by that it comprises using the copper plating solutions as described above.\n\n[0012]The method for copper plating is characterized by that it is a copper plating method as described above wherein the copper plating method is electroless plating method.\n\n[0013]The method for copper plating is characterized by that it is a copper plating method as described above wherein the article to be plated is a rare earth metal-based permanent magnet.\n\n[0014]The method for copper plating is characterized by that it is a copper plating method as described above wherein the rare earth metal-based permanent magnet is a bonded magnet.\n\n[0015]The method for copper plating is characterized by that it is a copper plating method as described above wherein the bonded magnet is ring-shaped.\n\nBEST MODE FOR CARRYING OUT THE INVENTION\n\n[0016]In the copper plating solution of the present invention, the concentration of copper sulfate is confined in a range of from 0.03 mol/L to 0.5 mol/L. If the concentration should be lower than 0.03 mol/L, there is fear of impairing the copper deposition efficiency; on the other hand, if the concentration should exceed 0.5 mol/L, copper sulfate tends to precipitate easily, and it may be mixed in the copper plating film that is formed on the surface of the article to be plated.\n\n[0017]The concentration of ethylenediaminetetraacetic acid is confined in a range of from 0.05 mol/L to 0.7 mol/L. If the concentration should be lower than 0.05 mol/L, there is fear that the copper ions in the copper plating solution cannot be sufficiently complexed as to cause copper precipitation; on the other hand, if the concentration should exceed 0.7 mol/L, it is feared to result in the formation of an uneven copper plating film.\n\n[0018]As the sulfite, for instance, sodium sulfite or potassium sulfite is used either alone or as a mixture of both. The concentration of the sulfite is confined in a range of from 0.02 mol/L to 0.3 mol/L. If the concentration should be lower than 0.02 mol/L, there is fear of impairing the copper deposition efficiency, and dark brown colored impurities may be mixed in the formed copper plating film; on the other hand, if the concentration should exceed 0.3 mol/L, it is feared to result in the formation of an uneven copper plating film.\n\n[0019]The reason for limiting the pH of the copper plating solution of the present invention in a range of from 5.0 to 8.5 is as follows. If the pH should be lower than 5.0, it is feared that difficulties might be found on applying the solution to articles to be plated such as rare earth metal-based permanent magnets that are not stable under acidic conditions; on the other hand, if the pH should exceed 8.5, there is fear of impairing the adhesiveness of the copper plating film on the article to be plated. If necessary, the pH of the copper plating solution of the present invention may be adjusted by using a known pH adjusting agent such as sulfuric acid, sodium hydroxide, potassium hydroxide, and the like.\n\n[0020]If necessary, known additives may be added in a proper concentration to the copper plating solution of the present invention. For instance, 0.01 mol/L to 0.2 mol/L of sodium tartarate and the like may be added with the purpose of improving stability of the bath containing a complex of copper ion and sulfite or a complex of copper ion and ethylenediaminetetraacetic acid, or 0.2 mol/L to 0.6 mol/L of sodium sulfate and the like may be added as a conductor to the copper plating solution.\n\n[0021]Furthermore, hydrogensulfite such as sodium hydrogensulfite may be used in the place of the sulfite, and by adjusting pH in the range of from 5.0 to 8.5, the chemical equilibrium between the concentration of the sulfite and the concentration of the hydrogensulfite is made to act so that the concentration of the sulfite can be elevated as such that the concentration of the sulfite in the copper plating solution should be adjusted in a range of from 0.02 mol/L to 0.3 mol/L.\n\n[0022]The copper plating solution of the present invention can be applied to a copper plating method using electrolytic plating method. However, it is practically more valuable in case it is applied to a copper plating method using electroless plating method in the point that a uniform copper plating film with excellent adhesion properties is stably formed on the surface of an article to be plated.\n\n[0023]More specifically, since the copper plating solution of the present invention is free from formaldehyde, unfavorable effects of generating gaseous hydrogen on forming copper plating films by electroless plating method can be avoided. Thus, a uniform copper plating film excellent in adhesion can be formed with superior coverage on the surface of an article to be plated having concave portions such as voids on the surface, such as bonded magnets, and no embrittlement is caused on rare earth metal-based permanent magnets.\n\n[0024]From the viewpoint of assuring favorable operability in case of applying the copper plating solution of the present invention to copper plating method using electroless plating method, the process is preferably carried out in a temperature range of from 25° C. to 70° C. and for a duration of 30 minutes to 90 minutes.\n\n[0025]As the articles to be plated to which the copper plating solution of the present invention is favorably applied, as rare earth metal-based permanent magnets, particularly as bonded magnets, mentioned are the follows.\n\n[0026]A bonded magnet may be a magnetically isotropic bonded magnet or a magnetically anisotropic bonded magnet so long as the bonded magnet contains magnetic powder and resin binders as the principal components. In addition to the magnets that are bonded and shaped by using a resin binder, those bonded and shaped by using a metallic binder or an inorganic binder are included in the bonded magnets above. Furthermore, the binder may contain fillers.\n\n[0027]Bonded magnets differing in compositions and crystal structures are known, and the invention is applicable to all of these.\n\n[0028]For instance, there can be mentioned an anisotropic R—Fe—B based bonded magnet as disclosed in Japanese Patent Laid-Open No. 92515/1997, a Nd—Fe—B based nanocomposite magnet having a soft magnetic phase (e.g., α-Fe and Fe3B) and a hard magnetic phase (Nd2Fe14B) as disclosed in Japanese Patent Laid-Open No. 203714/1996, or a bonded magnet using an isotropic Nd—Fe—B based magnetic powder (e.g., MQP-B (trade name) produced by MQI corp.) prepared by a widely used conventional melt quenching process.\n\n[0029]Further included are the R—Fe—N based bonded magnets expressed by (Fe1−xRx)1−yNy (0.07≦x≦0.3, 0.001≦y≦0.2) as disclosed in Japanese Patent Publication No. 82041/1993.\n\n[0030]The magnetic powder constituting the bonded magnet can be obtained by methods such as a dissolution and milling process which comprises melting a rare earth metal-based permanent magnet alloy, subjecting it to a casting treatment to produce an ingot, and pulverizing the ingot; a sintered-product pulverizing process which comprises producing a sintered magnet and then pulverizing the sintered magnet; a reduction and diffusion process which produces a magnetic powder directly by the Ca reduction; a rapid solidification process which comprises producing a ribbon foil of a rare earth metal-based permanent magnet alloy by a melting jet caster, and pulverizing and annealing the ribbon foil; an atomizing process which comprises melting a rare earth metal-based permanent magnet alloy, powdering the alloy by atomization and subjecting the powdered alloy to a heat treatment; and a mechanical alloying process which comprises powdering a starting metal, finely pulverizing the powdered metal and subjecting the finely pulverized metal to a heat treatment, and the like.\n\n[0031]Furthermore, the magnetic powder constituting the R—Fe—N based bonded magnet may be obtained by a gas nitrided process, which comprises pulverizing a rare earth metal-based permanent magnet alloy, nitriding the pulverizing alloy in gaseous nitrogen or gaseous ammonia, and then finely pulverizing the resulting alloy.\n\n[0032]As a method for applying magnetic anisotropy to bulk and magnetic powder, there can be employed a hot working and crushing method (Japanese Patent Publication No. 20242/1992), which comprises sintering an alloy powder obtained by rapid solidification process at low temperatures by means of hot pressing and the like, and then crushing a bulk magnetic body to which magnetic anisotropy is imparted by means of hot swaging; a packed rolling method (Japanese Patent Publication No. 2596835), which comprises directly feeding and sealing an alloy powder obtained by rapid solidification process in a metallic vessel, and then imparting magnetic anisotropy to the powder by plastic working such as hot rolling; a method of hot working and crushing the ingot (Japanese Patent Publication No. 66892/1995), which comprises hot plastic working an alloy ingot, and then obtaining a magnetic powder having imparted thereto magnetic anisotropy by crushing; and an HDDR method (Japanese Patent Publication No. 82575/1994), which comprises occluding hydrogen in rare earth metal-based permanent magnet alloy by heating the alloy in hydrogen, followed by dehydrogenation treatment, and then cooling to obtain a magnetic powder.\n\n[0033]As the methods for imparting magnetic anisotropy, they are not only limited to the combinations of the starting alloy and the means for rendering the powder anisotropy above, but also employable are other methods in which the starting material and methods are properly combined.\n\n[0034]As compositions of the magnetic powder available from the methods above, mentioned are, for instance, those containing 8% by atomic (at %) to 30 at % of R (where, R contains at least one type selected from rare earth elements inclusive of Y, preferably, is based on light rare earth elements such as Nd and Pr, or is a mixture with Nd, Pr, and the like), 2 at % to 28 at % of B (where, a part of B may be replaced by C), and 65 at % to 84 at % of Fe (where, a part of Fe may be replaced by at least one of Co and Ni, provided that Co accounts for 50% or less of Fe, and Ni accounts for 8% or less of Fe).\n\n[0035]In order to increase the coercive force and the corrosion resistance of the resulting bonded magnet, at least one of the following elements can be added into the starting powder: 3.5 at % or less of Cu, 2.5 at % or less of S, 4.5 at % or less of Ti, 15 at % or less of Si, 9.5 at % or less of V, 12.5 at % or less of Nb, 10.5 at % or less of Ta, 8.5 at % or less of Cr, 9.5 at % or less of Mo, 9.5 at % or less of W, 3.5 at % or less of Mn, 9.5 at % or less of Al, 2.5 at % or less of Sb, 7 at % or less of Ge, 3.5 at % or less of Sn, 5.5 at % or less of Zr, 5.5 at% or less of Hf, 8.5 at % or less of Ca, 8.5 at % or less of Mg, 7 at % or less of Sr, 7 at % or less of Ba, 7 at % or less of Be, and 10 at % or less of Ga.\n\n[0036]Preferably, the composition for the magnetic powder for use in the Nd—Fe—B based nanocomposite magnet contains from 1 at % to 10 at % of R, 5 at % to 28 at % of B, and substantially Fe for balance.\n\n[0037]In case resin binder is used as the binder for use in the production of bonded magnet, any resin suitable for the molding method can be selected. For instance, as the resin suitable for compression molding, there can be mentioned an epoxy resin, phenolic resin, and diallyl phthalate, and the like. As the resin suitable for injection molding, mentioned are polyamide resins such as 6-nylon and 12-nylon, polyphenylene sulfide, and polybutylene phthalate, and the like. As the resins suitable for extrusion molding and rolling, mentioned are poly(vinyl chloride), acrylonitrile-butadiene rubber, chlorinated polyethylene, natural rubber, chlorosulfonated polyethylene, and thermoplastic elastomer, and the like.\n\n[0038]Various methods for producing bonded magnets are known; for instance, generally employed is a compression molding comprising mixing at a predetermined blending ratio, the magnetic powder and resin binder, together with a silane-based or titanium-based coupling agent, a lubricant for facilitating molding, a binding agent for resin and inorganic fillers, if necessary, followed by kneading and compression molding, and then heating the resulting molding to cure the resin. Also employed in general are injection molding, extrusion molding, and rolling.\n\n[0039]Another film may be laminated on the surface of the copper plating film thus formed by using the copper plating solution of the present invention to further impart corrosion resistance and functionality to the article. In forming a nickel plating film on the surface of the bonded magnet, by forming a copper plating film by using the copper plating solution of the present invention as a base film under a nickel plating film, not only the magnet base can be prevented from being corroded by the nickel plating solution, but a nickel plating film can be formed with excellent adhesion. Furthermore, the surface of a copper plating film formed by using the copper plating solution of the present invention may be subjected to oxidation treatment according to black-color copper oxide method using a chemical conversion treatment solution such as alkaline potassium persulfate solution, such that a layer of cupric oxide film may be formed to render the surface highly anti-corrosive even in case the article is immersed in a highly corrosive oxidative electrolytic solution.\n\nEXAMPLES\n\n[0040]The invention is described in further detail by referring to examples below, but it should be understood that the invention is not limited thereby.\n\nExample 1\n\n[0041]An alloy powder prepared by rapid solidification process, consisting of particles having an average particle diameter of 150 μm and containing 12% by atomic (at %) of Nd, 77 at % of Fe, 6 at % of B, and 5 at % of Co, was kneaded with epoxy resin added at a concentration of 2 wt %. The resulting mixture was compression molded under a pressure of 7 ton/cm2, and was cured at 170° C. for 1 hour to obtain a Nd—Fe—B based ring-shaped bonded magnet (denoted hereinafter as “magnet test piece A”) 31.0 mm in outer diameter, 28.5 mm in inner diameter, and 4.0 mm in height. The magnet test piece A was subjected to barrel polishing to remove the surface contaminated layer, and was degreased with a 0.1 mol/L of sodium hydroxide aqueous solution to be subjected to the following experiments.\n\n[0042]copper plating solutions differing in concentration of sudium sulfite were prepared by varying the addition of sodium sulfite in a solution containing 0.1 mol/L of copper sulfate, 0.15 mol/L of ethylenediaminetetraacetic acid, and 0.5 mol/L of sodium sulfate, and the pH of the solution was adjusted to 6.9 using sodium hydroxide. The magnet test piece A was immersed into the copper plating solution heated to 60° C. while varying the time duration of immersion to form a copper plating film on the surface of the magnet test piece A according to electroless plating method. The results are given in Table 1.\n\n[0043]TABLE 1The change in copper plating film thickness (μm) with changingconcentration of sodium sulfite and immersion time duration.ImmersiontimeConcentration of sodium sulfiteduration(mol/L)(minutes)00.040.080.120.160.20300.20.70.80.80.80.8600.31.21.71.71.71.7900.51.52.02.02.02.0(unit: μm)\n\n[0044]Table 1 clearly reads that, by adding sodium sulfite in The copper plating solution, the film thickness of the copper plating film formed on the surface of the magnet test piece A increases with increasing concentration of sodium sulfite and with increasing time duration of immersion up to a sodium sulfite concentration of 0.08 mol/L. The copper plating film formed on the surface of the magnet test piece A using the copper plating solution containing sodium sulfite exhibited clear pink color, and the copper plating film remained free of peeling off when subjected to cross cutting using a cutter, showing excellent adhesion to the surface of the magnet test piece A. By adding sodium sulfite in the copper plating solution, in the process of forming the copper plating film, the results thus obtained was believed in the attribution to the effect of sodium sulfite functioning as a reaction stabilizer, which stabilized monovalent copper ion (Cu1+) by forming a complex of Cu1+ with sulfurous acid, and thereby allowing efficient and stable ion exchange reaction to take place.\n\nExample 2\n\n[0045]An alloy powder prepared by rapid solidification process, consisting of particles having an average particle diameter of 150 μm and containing 12 at % of Nd, 77 at % of Fe, 6 at % of B, and 5 at % of Co, was kneaded with epoxy resin added at a concentration of 2 wt %. The resulting mixture was compression molded under a pressure of 7 ton/cm2, and was cured at 170° C. for 1 hour to obtain a Nd—Fe—B based ring-shaped bonded magnet (denoted hereinafter as “magnet test piece B”) 30.2 mm in outer diameter, 28.0 mm in inner diameter, and 4.0 mm in height. The magnet test piece B was subjected to barrel polishing to remove the surface contaminated layer, and was degreased with a 0.1 mol/L of sodium hydroxide aqueous solution to be subjected to the following experiments.\n\n[0046]A copper plating solution was prepared by adding sodium sulfite in an amount to yield a concentration of 0.12 mol/L in a solution containing 0.1 mol/L of copper sulfate, 0.15 mol/L of ethylenediaminetetraacetic acid, and 0.5 mol/L of sodium sulfate, and the pH of the solution was adjusted to 6.9 by using sodium hydroxide. The magnet test piece B thus obtained was immersed into the copper plating solution heated to 60° C. for 60 minutes to form a copper plating film on the surface of the magnet test piece B according to electroless plating method.\n\n[0047]The copper plating film formed on the surface of the magnet test piece B exhibited clear pink color with a film thickness of 1.7 μm, and the copper plating film remained free of peeling off when subjected to cross cutting using a cutter, showing excellent adhesion to the surface of the magnet test piece B.\n\nExample 3\n\n[0048]A copper plating film was formed on the surface of magnet test piece B by using the same copper plating solution and by performing electroless plating method under the same conditions as in Example 2, except for changing the addition of sodium sulfite, such that the concentration thereof would become 0.04 mol/L instead of 0.12 mol/L.\n\n[0049]The copper plating film formed on the surface of the magnet test piece B exhibited clear pink color with a film thickness of 1.2 μm, and the copper plating film remained free of peeling off when subjected to cross cutting using a cutter, showing excellent adhesion to the surface of the magnet test piece B.\n\nComparative Example 1\n\n[0050]A copper plating film was formed on the surface of magnet test piece B by using the same copper plating solution and by performing electroless plating method under the same conditions as in Example2, except for not adding any sodium sulfite, instead of adding sodium sulfite to a concentration of 0.12 mol/L.\n\n[0051]The copper plating film formed on the surface of the magnet test piece B was an impurity-containing dark brown colored film of 0.3 μm in thickness. Apart of the copper plating film peeled off when subjected to cross cutting using a cutter.\n\nComparative Example 2\n\n[0052]A copper plating film was formed on the surface of magnet test piece B by using the same copper plating solution and by performing electroless plating method under the same conditions as in Example 2, except for adjusting the pH to 3.8 by using sulfuric acid instead of adjusting the pH to 6.9 by using sodium hydroxide.\n\n[0053]However, a part of the surface of the magnet test piece B remained free of formation of copper plating film, and the copper plating film peeled off when subjected to cross cutting using a cutter.\n\nExample 4\n\n[0054]A copper plating solution was prepared by adding potassium sulfite in an amount to yield a concentration of 0.08 mol/L in a solution containing 0.1 mol/L of copper sulfate, 0.15 mol/L of ethylenediaminetetraaceticacid, 0.5mol/L of sodium sulfate, and 0.1 mol/L of sodium tartarate, and the pH of the solution was adjusted to 6.9 by using sodium hydroxide. The magnet test piece B subjected to barrel polishing for removal of the surface contaminated layer, and degreased with a 0.1 mol/L of sodium hydroxide aqueous solution was immersed into the thus obtained copper plating solution heated to 60° C. for 60 minutes to form a copper plating film on the surface of the magnet test piece B according to electroless plating method.\n\n[0055]The copper plating film formed on the surface of the magnet test piece B exhibited clear pink color with a film thickness of 1.7 μm, and the copper plating film remained free of peeling off when subjected to cross cutting using a cutter, showing excellent adhesion to the surface of the magnet test piece B.\n\nComparative Example 3\n\n[0056]A copper plating solution was prepared by adding 150 mL of 37% formaldehyde solution per 1 L of solution containing 0.1 mol/L of copper sulfate, 0.15 mol/L of ethylenediaminetetraacetic acid, 0.1 mol/L of sodium tartarate, and 0.1 mol/L of sodium sulfite, and the pH of the solution was adjusted to 10 by using sodium hydroxide. The magnet test piece B subjected to barrel polishing for removal of the surface contaminated layer, and degreased with a 0.1 mol/L of sodium hydroxide aqueous solution was immersed into the thus obtained copper plating solution heated to 30° C. for 30 minutes to form a copper plating film on the surface of the magnet test piece B according to electroless plating method. The copper plating solution was continuously stirred, such that the copper plating film should not result in an impurity-containing dark brown colored film.\n\n[0057]As a result, a clear pink colored copper plating film was formed on the outer surface of the magnet test piece B, but the copper plating film was insufficiently formed on the inner surface, thereby leaving out non-plated portions (exposed magnet grain portions) . Accordingly, red colored rusts were found to form on the magnet test piece B several hours later. This was due to gaseous hydrogen generated by the reduction deposition reaction of formaldehyde, which bubbles prevented copper plating film from being formed satisfactorily on the inner surface.\n\nExample 5\n\n[0058]A copper plating solution was prepared by adding sodium sulfite in an amount to yield a concentration of 0.2 mol/L in a solution containing 0.1 mol/L of copper sulfate, 0.15 mol/L of ethylenediaminetetraacetic acid, and 0.5 mol/L of sodium sulfate, and the pH of the solution was adjusted to 7 by using sodium hydroxide. The magnet test piece A subjected to barrel polishing for removal of the surface contaminated layer, and degreased with a 0.1 mol/L of sodium hydroxide aqueous solution was immersed into the thus obtained copper plating solution heated to 60° C. for 60 minutes to form a copper plating film on the surface of the magnet test piece A according to electroless plating method. The copper plating film formed on the surface of the magnet test piece A exhibited clear pink color with a film thickness of 1.7 μm.\n\n[0059]The magnet test piece A with the copper plating film formed on the surface was rinsed with water and dried, and a nickel plating film was formed on the surface of the copper plating film by performing electrolytic plating method in a nickel plating solution containing 0.91 mol/L of nickel sulfate, 0.19 mol/L of nickel chloride, and 0.57 mol/L of boric acid and its pH adjusted to 4 by using nickel carbonate, at a bath temperature of 50° C., a current density of 1.2 A/dm2, and a time duration of 120 minutes. Thus was formed a nickel plating film of 19 μm in thickness on the surface of the copper plating film.\n\n[0060]The magnet test piece A having a nickel plating film on the surface with copper plating film interposed was rinsed with water and dried, and was subjected to accelerated corrosion resistant test by allowing to stand for 50 hours under a high temperature and high humidity condition of 80° C. and 90% relative humidity. No changes and no rust generation were found on the surface of the nickel plating film.\n\nComparative Example 4\n\n[0061]A nickel plating film of 24 μm in thickness was formed directly on the surface of the magnet test piece A by using the same nickel plating solution as that used in Example 5 and by performing electrolytic plating method, at a bath temperature of 50° C., a current density of 1.2 A/dm2, and a time duration of 150 minutes.\n\n[0062]The magnet test piece A having a nickel plating film formed on the surface thus obtained was rinsed with water and dried, and was subjected to accelerated corrosion resistant test by allowing to stand for 50 hours under a high temperature and high humidity condition of 80° C. and 90% relative humidity. As a result, cracks and bulging were found to occur, and numerous red-brown colored rusts generated on the surface of the nickel plating film.\n\nINDUSTRIAL APPLICABILITY\n\n[0063]The copper plating solution of the present invention is applicable to an article to be plated such as a rare earth metal-based permanent magnet, and it stably provides a uniform copper plating film excellent in adhesion on the surface of the article.\n\n[0064]More specifically, since the copper plating solution of the present invention is free from formaldehyde, unfavorable effects of generating gaseous hydrogen on forming copper plating films by electroless plating method can be avoided. Thus, a uniform copper plating film excellent in adhesion can be formed with superior coverage on the surface of an article to be plated having concave portions such as voids on the surface, such as bonded magnets, and no embrittlement is caused on rare earth metal-based permanent magnets.', '技术领域 \n\n [0001] 铜镀液和铜镀覆方法技术领域本发明涉及一种铜镀液和铜镀覆方法,其稳定地提供在诸如稀土金属类永磁体的待镀物品的表面上具有优异粘附性的均匀铜镀膜。 \n\n 背景技术 \n\n [0002] 以基于Nd-Fe-B的永磁体为代表的基于稀土金属的永磁体,例如基于R-Fe-B的永磁体,具有高的磁性,并且现在被用于各个领域。 特别地,使用磁性粉末和树脂粘合剂作为主要成分的粘结磁体具有优异的尺寸精度,并且可以容易地定制成期望的形状或整体成型。 因此,诸如环形磁体之类的各种形状的粘结磁体被广泛用于电子设备等中。 \n\n [0003] 然而,稀土金属基永磁体包含在大气下易于氧化腐蚀的金属物质(特别是R)。 因此,在不进行表面处理的情况下使用时,由于空气中少量存在的酸,碱,水等的影响,腐蚀从表面进行,从而产生生锈。 这导致磁性能的劣化或波动。 而且,如果在组装在诸如磁路的装置中的磁体上产生生锈,则担心生锈会散开以污染外围部件。 因此,在使用稀土金属类永磁体的情况下,需要赋予磁体耐腐蚀性。 \n\n [0004] 提出了用于赋予被镀物例如稀土金属类永磁体耐腐蚀性的各种方法,并且是通过化学镀法在被镀物的表面上形成铜镀膜的方法。 这种方法之一。 \n\n [0005] 在使用化学镀方法的铜镀方法中,通常采用化学还原镀方法,其包括在以硫酸铜和乙二胺四乙酸为主要成分的镀铜溶液中添加还原剂,然后通过使用还原剂, 在待镀制品的催化剂活化表面上的铜镀液中选择性地沉积铜离子。 根据该方法,只要铜沉积物相对于还原剂的氧化反应保持催化活性,铜沉积反应就继续进行。 因此,根据将物品浸入铜镀液中的时间,可以在被镀物品的表面上形成期望的膜厚的铜镀膜。 在该方法中,通常在碱性浴条件下将甲醛用作还原剂。 \n\n [0006] 作为在被镀物的表面上形成铜镀膜的方法,如上所述的采用化学还原镀覆法的铜镀覆方法具有较高的实用价值。 然而,在使用甲醛的还原沉积反应的情况下,根据反应机理产生气态氢。 气态氢气泡不利地影响镀铜膜在待镀物品上的附着力,特别是那些在表面上具有凹入部分如空隙的空间,例如粘结磁体。 此外,在待镀覆的物品经受氢脆的情况下,例如稀土金属基永磁体,气态氢对物品本身产生不利的影响。 \n\n [0007] 因此,本发明的目的是提供一种铜镀液和铜镀方法,其能够稳定地在待镀物品例如稀土金属表面上形成粘附力极好的均匀铜镀膜。 基永磁体。 \n\n 发明内容 \n\n [0008] 鉴于上述情况,本发明人进行了广泛的研究,并且代替使用诸如甲醛的还原剂的化学还原镀覆方法,他们关注了经典的离子交换方法,其中在沉积物上形成铜沉积。 无需使用任何还原剂即可电镀的物品表面,其基于金属离子的交换反应。 作为用于离子交换法的镀铜溶液,已知以硫酸铜和乙二胺四乙酸为主要成分的溶液。 但是,由于溶液是酸性的,pH值为4至5,因此不适用于在酸性条件下不稳定的稀土金属类永磁体。 通过添加氢氧化钠等,可以在中性区域调节溶液的pH。 然而,已经发现,在通过在中性区域中调节溶液的pH来使用这种镀铜溶液的情况下,会出现如下问题:由于沉积铜而导致镀铜膜的生长速率太低。 或者,相对于稀土金属类永磁体,所得镀膜的粘合性较差。 因此,已经进行了进一步的研究,并且发现,通过在包含硫酸铜和乙二胺四乙酸作为主要成分的镀铜溶液中添加亚硫酸盐,将每种成分的含量调节至预定的组成和pH。 如果将其调整为规定的范围,则能够将铜镀液应用于稀土类永磁体等物品,并且能够在被镀物的表面上稳定地形成附着性优异的均匀的铜镀膜。  。 \n\n [0009] 基于上述发现完成了本发明,并且根据本发明的镀铜溶液的特征在于,其包含0.03mol / L至0.5mol / L的硫酸铜,0.05mol / L至0.7mol / L。  L的乙二胺四乙酸和0.02mol / L至0.3mol / L的亚硫酸盐,且pH调节至5.0至8.5。 \n\n [0010] 镀铜溶液的特征在于它是如上所述的镀铜溶液,其中亚硫酸盐是亚硫酸钠和/或亚硫酸钾。 \n\n [0011] 根据本发明的用于对待镀物品进行镀铜的方法,其特征在于,其包括使用如上所述的镀铜溶液。 \n\n [0012] 镀铜的方法的特征在于,它是如上所述的镀铜方法,其中镀铜方法是化学镀方法。 \n\n [0013] 镀铜的方法的特征在于,它是如上所述的镀铜方法,其中,待镀物品是稀土金属基永磁体。 \n\n [0014] 镀铜的方法的特征在于,它是如上所述的镀铜方法,其中稀土金属基永磁体是粘结磁体。 \n\n [0015] 镀铜方法的特征在于,其是如上所述的粘结磁体为环状的镀铜方法。 \n\n 实施本发明的最佳模式 \n\n [0016] 在本发明的镀铜溶液中,硫酸铜的浓度被限制在0.03mol / L至0.5mol / L的范围内。 如果浓度低于0.03mol / L,则有可能损害铜的沉积效率。 另一方面,如果浓度超过0.5mol / L,则硫酸铜容易析出,有可能混入在被镀物的表面形成的铜镀膜中。 \n\n [0017] 乙二胺四乙酸的浓度限制在0.05mol / L至0.7mol / L的范围内。 如果浓度低于0.05mol / L,则担心镀铜溶液中的铜离子不能充分络合而引起铜析出。 另一方面,如果浓度超过0.7mol / L,则可能导致形成不均匀的镀铜膜。 \n\n [0018] 作为亚硫酸盐,例如,可以单独使用亚硫酸钠或亚硫酸钾或将二者混合使用。 亚硫酸盐的浓度被限制在0.02mol / L至0.3mol / L的范围内。 如果浓度低于0.02mol / L,则有可能损害铜的沉积效率,并且在形成的镀铜膜中可能混入深褐色的杂质。 另一方面,如果浓度超过0.3mol / L,则可能导致形成不均匀的镀铜膜。 \n\n [0019] 将本发明的镀铜溶液的pH限制在5.0至8.5的原因如下。 如果pH应低于5.0,则担心在将溶液施加到待镀物品上时会发现困难,例如在酸性条件下不稳定的稀土金属基永磁体。 另一方面,如果pH超过8.5,则有可能损害镀铜膜在被镀物上的密合性。 如果需要,可以通过使用已知的pH调节剂例如硫酸,氢氧化钠,氢氧化钾等来调节本发明的镀铜溶液的pH。 \n\n [0020] 如果需要,可以以适当的浓度将已知的添加剂添加到本发明的镀铜溶液中。 例如,可以添加0.01mol / L至0.2mol / L的酒石酸钠等,以提高包含铜离子与亚硫酸盐的络合物或铜离子与乙二胺四乙酸的络合物或0.2的浴液的稳定性。 可以将mol / L至0.6mol / L的硫酸钠等作为导体添加到铜镀液中。 \n\n [0021] 另外,可以代替亚硫酸氢盐使用亚硫酸氢钠等亚硫酸氢盐,通过将pH调整为5.0〜8.5,从而使亚硫酸盐浓度与亚硫酸氢盐浓度之间的化学平衡起作用。 可以提高亚硫酸盐的浓度,使得应该将镀铜溶液中亚硫酸盐的浓度调节在0.02mol / L至0.3mol / L的范围内。 \n\n [0022] 本发明的镀铜溶液可以应用于使用电解镀覆法的镀铜方法。 然而,在将其应用于使用化学镀方法的铜镀覆方法的情况下,在稳定地在待镀覆的物品的表面上稳定地形成具有优异粘附性的均匀铜镀膜这一点上,它实际上更有价值。 \n\n [0023] 更具体地,由于本发明的铜镀液不含甲醛,因此可以避免在通过化学镀法形成铜镀膜时产生气态氢的不利影响。 因此,可以在具有凹入部分(例如粘结磁铁等表面上的空隙)的被镀物品的表面上形成具有优异覆盖率的均匀附着力优异的铜镀膜,并且不会在稀土金属上引起脆化。 基永磁体。 \n\n [0024] 从确保将本发明的铜镀覆溶液应用于使用化学镀方法的铜镀覆方法的情况下的良好操作性的观点出发,该处理优选在25℃至70℃的温度范围内进行。 持续30分钟到90分钟。 \n\n [0025] 作为有利地应用本发明的铜镀覆溶液的待镀物品,以下提及作为稀土金属基永磁体,特别是作为粘结磁体。 \n\n [0026] 粘结磁体可以是磁各向同性粘结磁体或磁各向异性粘结磁体,只要该粘结磁体包含磁性粉末和树脂粘合剂作为主要成分即可。 除了通过树脂粘结剂粘结和成形的磁体之外,在上述粘结磁体中还包括通过使用金属粘结剂或无机粘结剂粘结和成形的磁体。 此外,粘合剂可包含填料。 \n\n [0027] 组成和晶体结构不同的粘结磁体是已知的,并且本发明可应用于所有这些。 \n\n [0028] 例如,可以提及如日本专利公开No.92515 / 1997中公开的各向异性的基于R-Fe-B的粘结磁体,具有软磁相(例如,α-Fe-B的Nd-Fe-B的纳米复合磁体)。 铁和铁 3 B)和硬磁相(Nd 2 铁 14 B)如日本专利公开号203714/1996中所公开的,或者是使用通过以下方法制备的使用各向同性的基于Nd-Fe-B的等向性Nd-Fe-B基磁粉(例如,MQI corp。生产的MQP-B(商品名))制成的粘结磁体 广泛使用的常规熔体淬火工艺。 \n\n [0029] 还包括由(Fe表示的R-Fe-N基粘结磁体 1−x [R x )  1−y ñ y  如日本专利公开号82041/1993中所公开的(0.07≤x≤0.3,0.001≤y≤0.2)。 \n\n [0030] 构成粘结磁铁的磁粉可以通过以下方法获得:溶解和研磨工艺,该方法包括将稀土金属基永磁体合金熔融,对其进行铸造处理以生产铸锭,然后将其粉碎。 烧结产物粉碎过程,包括制造烧结磁体然后将所述烧结磁体粉碎。 还原和扩散过程,通过Ca还原直接产生磁粉; 一种快速固化方法,其包括通过熔融喷射铸造法生产稀土金属基永磁合金的带状箔,并将所述带状箔粉碎并退火; 雾化过程包括:熔化稀土金属基永磁合金,通过雾化使合金粉末化,并对粉末状合金进行热处理; 以及机械合金化方法,其包括将原料金属粉末化,将粉末状金属细粉碎并对其进行热处理等。 \n\n [0031] 此外,构成R-Fe-N基粘结磁体的磁粉可以通过气体氮化法获得,该方法包括将稀土金属基永磁体粉碎,在气态氮或气态氨中对粉碎的合金进行氮化,然后 精细粉碎所得合金。 \n\n [0032] 作为对块状和磁性粉末施加磁各向异性的方法,可以采用热加工和粉碎方法(日本专利公开第20242/1992号),该方法包括通过低温烧结通过快速凝固工艺获得的合金粉末。 进行热压等,然后通过热锻压碎具有磁各向异性的块状磁体。 填充轧制法(日本专利公开第2596835号),其包括将通过快速凝固工艺获得的合金粉末直接进料并密封在金属容器中,然后通过诸如热轧的塑性加工使粉末具有磁各向异性; 一种热加工和粉碎锭的方法(日本专利公开号68992/1995),该方法包括对合金锭进行热塑性加工,然后通过粉碎获得具有磁各向异性的磁性粉末。 以及HDDR法(日本专利公开号82575/1994),其包括通过在氢气中加热该合金,然后对其进行脱氢处理,然后冷却以获得磁性粉末,从而将稀土吸留在稀土金属基永磁合金中。 \n\n [0033] 作为赋予磁各向异性的方法,不仅限于起始合金和上述赋予粉末各向异性的手段的组合,还可以使用适当组合起始原料和方法的其他方法。 \n\n [0034] 作为可通过上述方法获得的磁性粉末的组成,例如,提及的是包含R的原子百分比为8原子%至30原子%的那些(其中,R至少包含一种选自稀土元素的类型,包括 Y优选地基于轻稀土元素,例如Nd和Pr,或者是与Nd,Pr等的混合物,B的2原子%至28原子%(其中,B的一部分可以被替换)  C)和65at%至84at%的Fe(其中,Fe的一部分可以被Co和Ni中的至少一种代替),前提是Co占Fe的50%或更少,而Ni占8 铁的百分比或更少)。 \n\n [0035] 为了提高所得到的粘结磁铁的矫顽力和耐腐蚀性,可以在原料粉末中添加以下元素中的至少一种:Cu:3.5at%以下,S:2.5at%以下,4.5at%。  Ti的%或更少,Si的15原子%或更少,V的9.5原子%或更少,Nb的12.5原子%或更少,Ta的10.5原子%或更少,Cr的8.5原子%或更少,Cr 9.5原子%或更少。  Mo以下,W为9.5at%以下,Mn为3.5at%以下,Al为9.5at%以下,Sb为2.5at%以下,Ge为7at%以下,Ge为3.5at%以下。  Sn,Zr 5.5 at%以下,Hf 5.5 at%以下,Ca 8.5 at%以下,Mg 8.5 at%以下,Sr 7 at%以下,Ba 7 at%以下 的Be为7at%以下,Ga为10at%以下。 \n\n [0036] 优选地,用于基于Nd-Fe-B的纳米复合磁体中的磁性粉末的组合物包含1at%至10at%的R,5at%至28at%的B以及基本上为平衡的Fe。 \n\n [0037] 在使用树脂粘合剂作为用于生产粘结磁体的粘合剂的情况下,可以选择适合于成型方法的任何树脂。 例如,作为适合于压缩成型的树脂,可以提及环氧树脂,酚醛树脂和邻苯二甲酸二烯丙基酯等。 作为适用于注射成型的树脂,可以举出例如6-尼龙和12-尼龙等聚酰胺树脂,聚苯硫醚和邻苯二甲酸丁二醇酯等。 作为适合于挤出成型和压延的树脂,提及的有聚(氯乙烯),丙烯腈-丁二烯橡胶,氯化聚乙烯,天然橡胶,氯磺化聚乙烯和热塑性弹性体等。 \n\n [0038] 产生粘结磁体的各种方法是已知的。 例如,通常使用的压缩模制包括以预定的混合比将磁粉和树脂粘合剂与基于硅烷的或基于钛的偶合剂,促进模制的润滑剂,用于树脂和无机的粘合剂的混合。 如果需要,填充料,然后捏合和压模,然后加热所得模制品以固化树脂。 通常还使用注射成型,挤出成型和轧制。 \n\n [0039] 通过使用本发明的镀铜溶液,可以在由此形成的镀铜膜的表面上层压另一膜,以进一步赋予制品耐腐蚀性和功能性。 在粘结磁铁的表面上形成镍镀膜时,通过使用本发明的铜镀液作为基底膜在镍镀膜下形成铜镀膜,不仅可以防止磁铁基 被镀镍溶液腐蚀,但是可以形成具有优异粘附性的镀镍膜。 此外,通过使用本发明的铜镀液形成的铜镀膜的表面可以使用碱性过硫酸钾溶液等化学转化处理液,根据黑色氧化铜法,通过黑色氧化铜法进行氧化处理。 即使将制品浸入高腐蚀性的氧化电解溶液中,也可以形成一层氧化铜膜层以使表面高度抗腐蚀。 \n\n 例子 \n\n [0040] 通过参考以下实施例更详细地描述本发明,但是应当理解,本发明不限于此。 \n\n 例子1 \n\n [0041] 通过快速凝固工艺制备的合金粉末,该合金粉末由平均粒径为150μm,且含有12原子%(原子%)的Nd,77原子%的Fe,6原子%的B和5原子%的Nd的颗粒组成 将Co以添加有2wt%浓度的环氧树脂捏合。 在7吨/厘米2的压力下将所得混合物压塑。 2 然后,在170℃下固化1小时,从而得到外径31.0mm,内径28.5mm,Nd-Fe-B类环状粘结磁铁(以下,称为“磁铁试验片A”)。 高度为4.0毫米。 将磁体测试片A进行滚筒抛光以去除表面污染层,并用0.1mol / L的氢氧化钠水溶液脱脂以进行以下实验。 \n\n [0042] 通过改变在含有0.1 mol / L硫酸铜,0.15 mol / L乙二胺四乙酸和0.5 mol / L硫酸钠的溶液中的亚硫酸钠的添加量和pH值来制备亚硫酸钠浓度不同的镀铜溶液 用氢氧化钠将溶液的总和调节至6.9。 根据化学镀方法,将磁体测试片A浸入加热至60℃的铜镀液中,同时改变浸渍时间,以在磁体测试片A的表面上形成铜镀膜。 结果在表1中给出。 \n\n [0043] \n\n    表格1  铜镀膜厚度(μm)随变化而变化  亚硫酸钠浓度和浸泡时间。  浸没  时间 亚硫酸钠浓度  持续时间 (摩尔/升)  (分钟) 0 0.04 0.08 0.12 0.16 0.20  30 0.2 0.7 0.8 0.8 0.8 0.8  60 0.3 1.2 1.7 1.7 1.7 1.7  90 0.5 1.5 2.0 2.0 2.0 2.0  (单位:μm)  \n\n [0044] 表1清楚地表明,通过在亚铜镀液中添加亚硫酸钠,在磁铁试片A的表面上形成的亚铜镀膜的膜厚随着亚硫酸钠浓度的增加和浸入时间的延长而增加。 亚硫酸钠浓度为0.08 mol / L。 使用含有亚硫酸钠的镀铜溶液在磁体试验片A的表面上形成的镀铜膜呈现出清晰的粉红色,并且当使用切割机进行横切时,该镀铜膜保持没有剥落的剥离,显示出优异的粘附性。 据信,通过在铜镀液中添加亚硫酸钠,在形成铜镀膜的过程中,将得到的结果归因于亚硫酸钠起反应稳定剂的作用, 稳定了单价铜离子(Cu 1+ )通过形成铜的络合物 1+  用亚硫酸,因此可以进行有效和稳定的离子交换反应。 \n\n 例子2 \n\n [0045] 将由平均粒径为150μm的,包含12at%的Nd,77at%的Fe,6at%的B和5at%的Co的由快速凝固工艺制备的合金粉末与 以2重量%的浓度添加环氧树脂。 在7吨/厘米2的压力下将所得混合物压塑。 2 并在170℃下固化1小时,从而获得外径30.2mm,内径28.0mm的Nd-Fe-B类环状粘结磁体(以下称为“磁体试验片B”), 高度为4.0毫米。 对磁体试验片B进行滚筒抛光以去除表面污染层,并用0.1mol / L的氢氧化钠水溶液脱脂以进行以下实验。 \n\n [0046] 通过在含有0.1 mol / L硫酸铜,0.15 mol / L乙二胺四乙酸和0.5 mol / L硫酸钠的溶液中添加一定量的亚硫酸钠以制备浓度为0.12 mol / L的铜电镀液 ,通过使用氢氧化钠将溶液的pH调节至6.9。 将如此获得的磁体测试片B浸入加热至60℃的铜镀液中60分钟,以根据化学镀方法在磁体测试片B的表面上形成铜镀膜。 \n\n [0047] 形成在磁体试验片B的表面上的镀铜膜呈现出透明的粉红色,膜厚为1.7μm,并且当使用切割机进行横切时,该镀铜膜没有剥落,显示出优异的附着力。 磁体测试件B的表面。 \n\n 例子3 \n\n [0048] 通过使用相同的镀铜溶液并在与实施例2相同的条件下通过化学镀方法在磁体测试片B的表面上形成镀铜膜,不同之处在于改变亚硫酸钠的添加使其浓度。 从原来的0.12 mol / L变为0.04 mol / L。 \n\n [0049] 在磁体试验片B的表面上形成的镀铜膜呈现出透明的粉红色,膜厚为1.2μm,并且当使用切割机进行横切时,该镀铜膜没有剥落,显示出优异的附着力。 磁体测试件B的表面。 \n\n 比较例1 \n\n [0050] 通过使用与实施例2相同的镀铜溶液并在与实施例2相同的条件下进行化学镀覆方法,在磁体试验片B的表面上形成镀铜膜,不同之处在于不添加亚硫酸钠,而是向亚硫酸氢钠中添加亚硫酸钠。 浓度为0.12 mol / L。 \n\n [0051] 形成在磁体试验片B的表面上的铜镀膜为厚度为0.3μm的含杂质的暗褐色膜。 使用切割机进行横切时,铜镀膜的一部分剥离。 \n\n 比较例2 \n\n [0052] 通过使用相同的镀铜溶液并在与实施例2相同的条件下通过化学镀方法在磁体测试片B的表面上形成镀铜膜,不同之处在于,使用硫酸代替调节pH至3.8。 用氢氧化钠将pH调至6.9。 \n\n [0053] 但是,磁体试验片B的表面的一部分没有形成镀铜膜,在使用切割机进行横切时,铜镀膜剥离。 \n\n 例子4 \n\n [0054] 通过在包含0.1mol / L的硫酸铜,0.15mol / L的乙二胺四乙酸,0.5mol / L的硫酸钠和0.5mol / L的硫酸盐的溶液中添加一定量的亚硫酸钾以产生0.08mol / L的浓度来制备镀铜溶液。  0.1 mol / L酒石酸钠,使用氢氧化钠将溶液的pH调节至6.9。 将经过滚筒抛光以除去表面污染层并用0.1mol / L的氢氧化钠水溶液脱脂的磁体测试片B浸入由此获得的加热至60℃的铜镀液中60分钟以形成。 根据化学镀方法在磁体测试片B的表面上镀铜膜。 \n\n [0055] 形成在磁体试验片B的表面上的镀铜膜呈现出透明的粉红色,膜厚为1.7μm,并且当使用切割机进行横切时,该镀铜膜没有剥落,显示出优异的附着力。 磁体测试件B的表面。 \n\n 比较例3 \n\n [0056] 每1 L含0.1 mol / L硫酸铜,0.15 mol / L乙二胺四乙酸,0.1 mol / L酒石酸钠和0.1 mol / L的溶液中加入150 mL 37%甲醛溶液,即可制得镀铜溶液。 溶液的pH值用氢氧化钠调节至10。 将经过滚筒抛光以除去表面污染层并用0.1mol / L的氢氧化钠水溶液脱脂的磁体测试片B浸入由此获得的加热至30℃的镀铜溶液中30分钟以形成 根据化学镀方法在磁体测试片B的表面上镀铜膜。 连续搅拌镀铜溶液,以使镀铜膜不会产生含杂质的深棕色膜。 \n\n [0057] 结果,在磁体试验片B的外表面上形成了透明的粉红色的铜镀膜,但是在内表面上形成的铜镀膜不足,从而留下了未镀部分(露出的磁粒部分)。  。 因此,数小时后发现在磁铁试验片B上形成红色的锈。 这是由于甲醛的还原沉积反应所产生的气态氢,其气泡阻止了内表面令人满意地形成镀铜膜。 \n\n 例子5 \n\n [0058] 通过在包含0.1mol / L的硫酸铜,0.15mol / L的乙二胺四乙酸和0.5mol / L的硫酸钠的溶液中添加一定量的亚硫酸钠来制备镀铜溶液,以使其浓度为0.2mol / L。  ,并通过使用氢氧化钠将溶液的pH调节至7。 将经过滚筒抛光以除去表面污染层并用0.1mol / L的氢氧化钠水溶液脱脂的磁体测试片A浸入由此获得的加热至60℃的镀铜溶液中60分钟以形成 根据化学镀方法在磁体测试片A的表面上镀铜膜。 形成在磁体试验片A的表面上的镀铜膜呈现出透明的粉红色,膜厚为1.7μm。 \n\n [0059] 将表面形成有铜镀膜的磁体试验片A用水冲洗并干燥,并且通过在包含0.91mol / mol的镍镀液中进行电解镀覆法,在铜镀膜的表面上形成镍镀膜。  L的硫酸镍,0.19 mol / L的氯化镍和0.57 mol / L的硼酸,并通过使用碳酸镍在50℃的浴温下将其pH值调节至4,电流密度为1.2 A / dm 2 ,持续时间为120分钟。 由此在铜镀膜的表面上形成厚度为19μm的镍镀膜。 \n\n [0060] 用水漂洗其表面上具有镀镍膜的镍测试片A,并将其用水冲洗并干燥,并通过在80℃的高温高湿条件下放置50小时进行加速耐腐蚀性测试。  °C和90%相对湿度。 在镀镍膜的表面上没有发现变化并且没有生锈。 \n\n 比较例4 \n\n [0061] 通过使用与实施例5中使用的镀镍溶液相同的镀镍溶液并在50℃的浴温下进行电解镀覆法,直接在磁体测试片A的表面上形成厚度为24μm的镀镍膜。  ,电流密度为1.2 A / dm 2 ,持续时间为150分钟。 \n\n [0062] 用水漂洗并干燥在其表面上形成有镍镀膜的磁体试验片A,并通过在80℃的高温高湿条件下放置50小时进行加速耐腐蚀性试验。 和90%的相对湿度。 结果,发现出现裂纹和鼓起,并且在镍镀膜的表面上产生许多红褐色的锈蚀。 \n\n 工业适用性 \n\n [0063] 本发明的镀铜溶液可应用于诸如稀土金属基永磁体的待镀制品,并且其稳定地提供了在制品表面上具有优异粘附性的均匀镀铜膜。 \n\n [0064] 更具体地,由于本发明的铜镀液不含甲醛,因此可以避免在通过化学镀法形成铜镀膜时产生气态氢的不利影响。 因此,可以在具有凹入部分(例如粘结磁铁等表面上的空隙)的被镀物品的表面上形成具有优异覆盖率的均匀附着力优异的铜镀膜,并且不会在稀土金属上引起脆化。 基永磁体。');
INSERT INTO `os_patent_instruction_text` VALUES (12927, 22756, '【0001】\n\n【発明の属する技術分野】\n\n本発明は、永久磁石の製造に用いられる急冷合金の製造方法に関する。特に、急冷条件を精密に制御することによって微細な結晶相を適切に形成することが必要な急冷合金の製造方法に関し、ソフト磁性相とハード磁性相とが磁気的に結合したナノコンポジット磁石に適している。\n\n【0002】\n\n【従来の技術】\n\n現在、R-Fe-B系磁石として、R2Fe14Bなどのハード磁性相と、Fe3B(Fe3.5Bを含む)やα-Feなどのソフト磁性相(高磁化強磁性相)とが磁気的に結合された組織構造を有するナノコンポジット型永久磁石が開発されている。ナノコンポジット型永久磁石の粉末は、樹脂材料を用いて所定の形状に固められることによって等方性ボンド磁石として用いられる。\n\n【0003】\n\nナノコンポジット磁石を製造する場合、出発原料として、非晶質組織、または非晶質相を多く含む組織を有する急冷合金(「急冷凝固合金」とも称されている。)を用いることが多い。通常、この急冷合金は、急冷直後においては非晶質相を含むものであり、熱処理によって充分に結晶化し、最終的には平均結晶粒径が10-9m〜10-6m程度の微細組織を有する磁性材料となる。\n\n【0004】\n\n結晶化のための熱処理後における磁性合金の組織構造は、結晶化熱処理前における急冷合金の組織構造に大きく依存する。このため、急冷合金中に析出した結晶相の種類および平均サイズや急冷合金中に含まれる非晶質相の割合などが最終的な磁石特性に重要な影響を与える。このような急冷合金の組織構造は、合金溶湯の急冷条件によって変化するため、優れた磁気特性を有するナノコンポジット磁石などの永久磁石を作製するには、急冷条件の制御が重要になる。\n\n【0005】\n\n従来、急冷合金を作製する方法としては、図1に示すような装置を用いた液体急冷方法が知られている。この方法では、底部にオリフィスを有するノズルから、銅などによって形成される冷却ロール上に溶融合金を噴射し、これを急冷することによって非晶質化された薄帯状の凝固合金を作製する。\n\n【0006】\n\nこのような方法については、これまで、磁性材料を研究する大学や機関によって研究および報告がなされてきた。ただし、ここで用いられている装置は、数10g〜数100g程度の合金をノズル内で溶解し、噴射する実験規模のものに過ぎず、このように処理量の少ない装置ではナノコンポジット磁石用の原料合金を量産することができない。\n\n【0007】\n\nまた、処理量を増加させた方法が、例えば、特開平2-179803号公報、特開平2-247305号公報、特開平2-247306号公報、特開平2-247307号公報、特開平2-247308号公報、特開平2-247309号公報、特開平2-247310号公報などに記載されている。\n\n【0008】\n\nこの方法では、溶解炉内で溶融した合金溶湯を、底部に噴射ノズルを有した容器内に注ぎ入れた後、容器内の溶湯に一定の圧力を加えることによって溶湯をノズルから冷却ロールの表面に向けて噴射させている(以下、この方法を「メルトスピニング法」と呼ぶ)。このように圧力をかけながらノズルを介して溶湯を噴射させることで、比較的速い流速を有する溶湯の条(溶湯の流れ)を冷却ロールの最上部付近に略垂直に噴射させることができ\n\nる。噴射された溶湯は、冷却ロールの表面上でパドル(湯溜まり)を形成し、このパドルのロール接触面が急冷され、薄帯状の急冷合金が作製される。\n\n【0009】\n\n上述のメルトスピニング法では、合金溶湯と冷却ロールとの接触長さが短いため、冷却ロール上では急冷が完了せず、冷却ロールから剥離した後の高温状態(例えば700℃〜900℃)の合金が飛行中にも冷却される。このため、急冷条件を精密に制御するには、冷却ロールの周速度を調節するだけでは充分ではなく、溶湯の噴射圧や急冷雰囲気ガスの圧力などを調整し、最適な急冷条件を見つけ出す必要がある。\n\n【0010】\n\nしかしながら、メルトスピニング法の場合、工業量産に対応できる程度(例えば、約1.5kg/分以上)にまで処理量を増加させると、溶湯供給量(溶湯噴射速度)の増加に伴って噴射ノズルの消耗が激しくなる。これによって、処理中に溶湯供給量が変動するため、急冷条件も変化し、安定した急冷状態を維持することができなくなる。\n\n【0011】\n\nなお、ロール周速度を例えば20m/秒を超える値に設定し、ほぼ完全に非晶質化した急冷合金を作製する場合は、急冷条件が多少変動しても急冷合金の組織構造に大きな変化はあらわれない。これに対し、ロール周速度を5m/秒以上20m/秒以下の範囲内に設定し、ナノメートルサイズの微細な結晶相を50体積%以上含む急冷合金を作製しようとする場合は、急冷条件が変動して冷却が不充分にしか行われないと、結晶相が粗大化するため、磁石特性が劣化する。逆に、冷却が過度に進むと、非晶質相の体積比率が大きくなり(例えば50%以上)、その後の熱処理によって適切な磁石組織を得ることが困難になる場合がある。また、作製された急冷合金の平均厚さが50μm以上になると、急冷条件の変動に起因する磁気特性のばらつきが大きくなりやすくなる。\n\n【0012】\n\nこのように急冷磁石の種類によっては、急冷条件を狭い範囲内において制御することが極めて重要になるが、メルトスピニング法による場合は、急冷条件が変動しやすいという問題がある。\n\n【0013】\n\n急冷合金を作製する他の方法としては、ストリップキャスト法が知られている。ストリップキャスト法では、溶解炉から合金溶湯を案内手段(シュート)上に供給し、シュート上の合金溶湯を冷却ロールと接触させることによって急冷合金を作製する。シュートは、溶湯を一時的に貯湯するように溶湯の流速を制御するとともにその流れを整流し、それにより、冷却ロールへの溶湯の安定した連続供給を実現する溶湯案内手段である。冷却ロールの外周表面に接触した溶湯は、回転する冷却ロールに引きずられるようにしてロール周面に沿って移動し、この過程において冷却される。\n\n【0014】\n\nストリップキャスト法では、ロール周方向における溶湯とロール外周面との接触長さが比較的長いため、溶湯の冷却はロール上で略完了する。また、ストリップキャスト法ではメルトスピニング法のような噴射ノズルを用いず、シュートを介して冷却ロール上への合金溶湯の連続的な供給を行うため、大量生産に適しており、製造コストの低下を実現することが可能である。\n\n【0015】\n\n【発明が解決しようとする課題】\n\nしかしながら、結晶組織を均一に微細化する必要のあるナノコンポジット磁石用急冷合金をストリップキャスト法によって作製するには、ロール周速度を従来のストリップキャスト法で採用していたロール周速度よりも速める必要がある。ロール周速度を速めないと、結晶相が粗大化し、最終的な磁石特性が劣化するからである。このため、ストリップキャスト法でナノコンポジット磁石用急冷合金を作製する場合は、メルトスピニング法による場合と同様に高速で冷却ロールを回転させる必要があり、合金溶湯の急冷条件を精密に制御することが難しくなる。\n\n【0016】\n\n以上説明したように、メルトスピニング法およびストリップキャスト法のいずれの急冷方法を採用する場合でも、急冷条件を精密に制御して、所望の組織構造を有する急冷合金を再現性良く作製することは難しく、特にナノコンポジット磁石の急冷合金として品質の優れたものを安定的に量産することが困難であった。\n\n【0017】\n\n本発明は上記事情に鑑みてなされたものであり、その目的とするところは、良好な組織を有する急冷合金を安定的に量産するための製造方法を提供することにある。\n\n【0018】\n\n【課題を解決するための手段】\n\n本発明による急冷合金の製造方法は、回転する冷却ロールに対して合金の溶湯を接触させることにより、前記合金を急冷し、それによって結晶相を含有する合金を得る急冷合金の製造方法であって、前記合金を加熱して、前記合金の溶湯を作製する工程と、前記合金の溶湯を前記冷却ロールに供給する工程と、前記合金の溶湯が凝固してゆく過程において、移動しつつある前記合金が放射する赤外線を検知することにより、合金温度を測定する工程と、前記合金温度に基づいて急冷条件を調節する工程とを包含する。\n\n【0019】\n\n本発明による急冷合金の製造方法は、回転する冷却ロールに対して合金の溶湯を接触させることにより、前記合金を急冷し、それによって結晶相を含有する合金を得る急冷合金の製造方法であって、前記合金を加熱して、前記合金の溶湯を作製する工程と、前記合金の溶湯を前記冷却ロールに供給する工程と、前記合金の溶湯が凝固してゆく過程において、移動しつつある前記合金が放射する赤外線を検知することにより、少なくとも第1の位置における合金温度と第2の位置における合金温度とを測定する工程と、前記第1の位置における合金温度と前記第2の位置における合金温度との差ΔTが所定範囲内に含まれるように急冷条件を調節する工程とを包含する。\n\n【0020】\n\nある好ましい実施形態において、前記第1の位置は、前記合金の凝固が開始する前の位置であり、前記第2の位置は、前記冷却ロールから剥離した後の空中である。\n\n【0021】\n\nある好ましい実施形態において、前記合金が放射する赤外線の検知は、赤外線カメラによって行う。\n\n【0022】\n\nある好ましい実施形態において、前記赤外線カメラは、前記合金の溶湯が凝固してゆく過程において、移動しつつある前記合金の上方に配置されている。\n\n【0023】\n\nある好ましい実施形態において、前記第1および第2の位置は、それぞれ、前記赤外線カメラによる撮像エリア内から選択された第1および第2の領域内に含まれており、前記第1の領域内で最高の温度が前記第1の位置における合金温度とされ、前記第2の領域内で最高の温度が前記第2の位置における合金温度とされる。\n\n【0024】\n\nある好ましい実施形態において、前記第2の位置における前記合金の移動速度は、2m/秒以上である。\n\n【0025】\n\nある好ましい実施形態において、前記急冷条件は、前記合金を加熱するときの加熱量、前記合金を前記冷却ロールに供給する単位時間当たりの量、および前記冷却ロールの周速度のいずれかを含んでいる。\n\n【0026】\n\nある好ましい実施形態において、前記急冷条件を調節する工程は、前記差ΔTが前記所定範囲内に含まれない場合に、前記合金を加熱するときの加熱量および/または前記合金を前記冷却ロールに供給する単位時間当たりの量を変化させる第1工程と、前記第1工程を\n\n行ったにもかかわらず前記差ΔTが前記所定範囲内に含まれない場合に、前記冷却ロールの周速度を変化させる第2工程とを包含する。\n\n【0027】\n\nある好ましい実施形態において、前記合金の組成式は、(Fe1-mTm)100-x-y-zQxRyMz(TはCoおよびNiからなる群から選択された1種以上の元素、QはBおよびCからなる群から選択された1種以上の元素、RはLaおよびCeを実質的に含まない1種以上の希土類金属元素、Mは、Al、Si、Ti、V、Cr、Mn、Cu、Zn、Ga、Zr、Nb、Mo、Ni、Hf、Ta、W、Pt、Pb、AuおよびAgからなる群から選択された少なくとも1種の金属元素)で表現されており、組成比率x、y、z、およびmが、それぞれ、10≦x≦30at%、2≦y【0028】\n\nある好ましい実施形態において、前記冷却工程は、内径1mmを越えるノズルオリフィスを用いて前記合金溶湯を前記冷却ロールの表面に向けて噴射する工程を含む。\n\n【0029】\n\nある好ましい実施形態において、前記冷却工程は、案内面が水平方向に対して1〜80°の角度を形成する案内手段上に前記合金溶湯を供給し、前記冷却ロールとの接触領域に前記合金溶湯を移動させる工程を含む。\n\n【0030】\n\nある好ましい実施形態において、前記冷却工程は、前記案内手段により、前記合金溶湯の流れを複数条に分離し、各条の幅を前記冷却ロールの軸線方向に沿って所定の大きさに調節することを包含する。\n\n【0031】\n\nある好ましい実施形態において、前記第2の位置における合金温度は、前記複数条の少なくとも1つの条について測定した温度である。\n\n【0032】\n\nある好ましい実施形態において、前記第2の位置における合金温度は、前記複数条に含まれる幾つかの条について測定した温度の平均値である。\n\n【0033】\n\n本発明による永久磁石の製造方法は、上記いずれかの急冷合金を用意する工程と、前記急冷合金を加熱する工程と、前記急冷合金の粉末を用いて成形体を作製する工程とを包含する。\n\n【0034】\n\n【発明の実施の形態】\n\n本発明による急冷合金の製造方法は、合金の溶湯を作製する工程と、合金の溶湯を冷却ロールに供給する工程と、合金の溶湯が凝固してゆく過程において、移動しつつある合金が放射する赤外線を検知することにより、合金温度を測定する工程と、合金温度に基づいて急冷条件を調節する工程とを包含している。\n\n【0035】\n\n本発明の好ましい態様によると、移動しつつある前記合金が放射する赤外線を検知することにより、少なくとも第1の位置における合金温度と第2の位置における合金温度とを測定し、第1の位置における合金温度と第2の位置における合金温度との差ΔTが所定範囲内に含まれるように急冷条件を調節する。ここで言う「移動しつつある合金」とは、凝固した状態にある合金のみを指すのではなく、溶湯状態にある合金や急冷によって凝固しつつある合金をも広く含むものとする。また、本明細書における「急冷条件」とは、ロール上での急冷条件のみならず、急冷装置の各種運転パラメータ(溶湯温度、急冷室内の雰囲気の種類/圧力、ロールへの溶湯供給レートなど)を広く含むものとする。\n\n【0036】\n\n合金の発する赤外線を検知するために赤外線カメラを用いれば、撮像エリア内を高速で移\n\n動し、上限に揺れ動く合金薄帯の温度を適確に検出することができる。赤外線カメラは、撮像エリア内の物体が放射する赤外線をCCDなどの受光素子によって受け、光電変換により、赤外線強度に応じた電位を出力する装置である。赤外線カメラによれば、撮像エリア内の多数のポイントにおける物体の温度分布をリアルタイムで検知することができる。測定可能なポイントは、受光素子の有効画素数に相当する。この有効画素数が例えば水平100×垂直100の赤外線カメラを用いると、撮像エリア内の10000ポイントにおける物体温度を同時に検知することができる。このため、高速で移動しつつある合金を撮像エリア内に配置すれば、溶湯状態から凝固状態に変化する過程にある合金の温度を正確に知ることができる。本発明に用いる赤外線カメラの有効画素数は、水平300×垂直300以上であることが好ましい。\n\n【0037】\n\nこのようにして合金が出す赤外線を検知することにより、急冷開始前における合金溶湯の温度T1と、急冷過程における合金の温度T2とを測定すれば、急冷過程で生じた温度差ΔT(=T1-T2)をリアルタイムで計測することが可能となる。一般に、冷却開始前における合金溶湯の温度(出湯温度)は、所定範囲内に制御しやすいが、急冷過程における合金温度は変動しやすく、所定範囲内に制御することが難しい。特に溶湯供給レートが1kg/秒を超えて大きくなると、溶湯から冷却ロールへ大きな熱移動が生じるため、冷却ロールの表面温度が過度に上昇して抜熱効果が低下する傾向がある。このため、出湯温度(T1)が略一定に保持されていても、T2が上昇しやすく、ΔT(=T1-T2)が経時的に変化する可能性がある。ΔTのばらつきは、急冷合金の組織構造のばらつきを招き、最終的には磁石特性を劣化させる。\n\n【0038】\n\n本発明では、高速(5m/秒以上)で移動しつつある合金の放射する赤外線を検知することにより、ΔTが所定範囲内に維持されるように急冷条件を制御する。具体的には、ΔTが予め設定された範囲から外れた場合、急冷条件を左右する制御パラメータを変化させることにより、ΔTが設定範囲内に収まるようにする。\n\n【0039】\n\n急冷条件を左右する制御パラメータとしては、合金を溶湯化するときの加熱量(ヒータ出力)、溶湯供給レート、冷却ロールの周速度などがあげられる。これらのパラメータを適切に制御することにより、ΔTのばらつきを減少させ、ΔTの標準偏差σを小さく(例えば20℃未満)に抑えることができるので、均一な組織を有する急冷合金を再現性良く製造することができる。\n\n【0040】\n\nΔTを求めるために必要な温度T1およびT2のうち、温度T1は、溶湯が冷却ロールに接触する直前に測定することが好ましい。メルトスピニング法の場合は、ノズルの先端と冷却ロール表面との間における溶湯温度を測定するか、あるいは、タンディッシュ坩堝内の出湯ノズル真上に位置する部分の溶湯温度を測定し、その温度をT1と設定すればよい。また、ストリップキャスト法による場合は、例えば、シュートの先端部付近(冷却ロール側)における溶湯温度を測定し、T1と設定することができる。\n\n【0041】\n\n一方、温度T2は、ある程度の冷却が進行したと考えられる位置で測定すればよく、その位置はΔTが適切な大きさとなるように選択される。例えば、冷却ロールの表面周速度が比較的速い場合は、合金薄帯が冷却ロールの表面から離れ、冷却雰囲気中を飛行している途中の温度を測定し、温度T2とすることが好ましい。ただし、冷却ロールの周速度が比較的遅い場合は、合金が冷却ロールの表面から離れる前においても充分な冷却が行われ得るため、冷却ロール上にある合金の温度を測定し、その温度をT2としてもよい。\n\n【0042】\n\n以下、本発明の好ましい実施形態を説明する。\n\n【0043】\n\n(実施形態1)\n\n本実施形態では、例えば、図1に示す急冷装置(メルトスピニング装置)を用いて原料合金を製造する。酸化しやすい希土類元素RやFeを含む原料合金を作製する場合、酸化を防ぐため、不活性ガス雰囲気中で合金製造工程を実行することが好ましい。不活性ガスとしては、ヘリウムまたはアルゴン等の希ガスや窒素を用いることができる。なお、窒素は希土類元素Rと比較的に反応しやすいため、ヘリウムまたはアルゴンなどの希ガスを用いることが好ましい。\n\n【0044】\n\n図1の装置は、真空または不活性ガス雰囲気を保持し、その圧力を調整することが可能な原料合金の溶解室1および急冷室2を備えている。図1(a)は全体構成図であり、図1(b)は、一部の拡大図である。\n\n【0045】\n\n図1(a)に示されるように、溶解室1は、所望の磁石合金組成になるように配合された原料20を高温にて溶解する溶解炉3と、底部に出湯ノズル5を有する貯湯容器4と、大気の進入を抑制しつつ配合原料を溶解炉3内に供給するための配合原料供給装置8とを備えている。貯湯容器4は原料合金の溶湯21を貯え、その出湯温度を所定のレベルに維持できる加熱装置(不図示)を有している。\n\n【0046】\n\n急冷室2は、出湯ノズル5から出た溶湯21を急冷凝固するための回転冷却ロール7を備えている。更に本実施形態では、急冷室2に赤外線カメラを配置し、図1(b)に示す位置P1およびP2における合金温度を測定する。\n\n【0047】\n\nこの装置においては、溶解室1および急冷室2内の雰囲気およびその圧力が所定の範囲に制御される。そのために、雰囲気ガス供給口1b、2b、および8bとガス排気口1a、2a、および8aとが装置の適切な箇所に設けられている。特にガス排気口2aは、急冷室2内の絶対圧を30kPa〜常圧(大気圧)の範囲内(好ましくは100kPa以下)に制御するため、ポンプに接続されている。溶解室1の圧力を変化させることにより、ノズル5から出る溶湯の噴射圧を調節することができる。\n\n【0048】\n\n溶解炉3は傾動可能であり、ロート6を介して溶湯21を貯湯容器4内に適宜注ぎ込む。溶湯21は貯湯容器4内において不図示の加熱装置によって加熱される。\n\n【0049】\n\n貯湯容器4の出湯ノズル5は、溶解室1と急冷室2との隔壁に配置され、貯湯容器4内の溶湯21を下方に位置する冷却ロール7の表面に流下させる。出湯ノズル5のオリフィス径は、1.0mm以上4.0mm以下の範囲内(例えば2.8mm)に設定される。溶湯21の粘性が大きい場合、溶湯21は出湯ノズル5内を流れにくくなり、急冷合金の厚さばらつきを招きやすいが、本実施形態では、オリフィス径を従来に比べて拡大するとともに、急冷室2を溶解室1よりも充分に低い圧力状態に保持しているため、溶解室1と急冷室2との間に大きな圧力差(10kPa以上の差圧)が形成され、溶湯21の出湯がスムーズに実行される。\n\n【0050】\n\n上記の装置を用い、本実施形態では以下の手順で急冷合金を作製する。\n\n【0051】\n\nまず、所望の組成式で表現される原料合金の溶湯21を作製し、図1の溶解室1の貯湯容器4に貯える。次に、この溶湯21は出湯ノズル5から減圧Ar雰囲気中の水冷ロール7上に出湯され、冷却ロール7との接触によって急冷され、凝固する。\n\n【0052】\n\n急冷直後における(熱処理前)の急冷合金に含まれる結晶相の体積比率を50%以上にするには、合金溶湯の冷却速度を1×102〜108℃/秒とすることが好ましく、1×102〜1×106℃/秒とすることが更に好ましい。\n\n【0053】\n\n合金の溶湯21が冷却ロール7によって冷却される時間は、回転する冷却ロール7の外周表面に合金が接触してから離れるまでの時間に相当し、その間に、合金の温度は低下し、過冷却液体状態になる。その後、過冷却状態の合金は冷却ロール7から離れ、不活性雰囲気中を飛行する。合金は薄帯状で飛行している間に雰囲気ガスに熱を奪われる結果、その温度は更に低下する。本実施形態では、雰囲気ガスの圧力を30kPa〜常圧の範囲内に設定しているため、雰囲気ガスによる抜熱効果が強まる。\n\n【0054】\n\n次に、図2を参照しながら、本実施形態で行う温度制御の一例を説明する。\n\n【0055】\n\nまず、出湯を開始した後、赤外線カメラを用いて位置P1における合金温度(溶湯温度)T1および位置P2における合金温度(急冷合金温度)T2を測定し、T1-T2=ΔTを算出する(S1)。\n\n【0056】\n\n次に、ΔTが基準範囲内にあるか否かを判断し(S2)、ΔTが基準範囲内にある場合、その条件で出湯を続け、必要な量の急冷合金が得られたならば、最終的に出湯を停止する。ここで、ΔTが基準範囲から外れた場合、貯湯容器4に設けた加熱装置(不図示)を用いて溶湯温度T1を変化させる(S3)。より詳細には、冷却ロールによる冷却能力が低下するなどして測定温度T2が徐々に上昇していった結果、ΔTが基準から外れた場合は、加熱装置の発熱量を低下させることによって溶湯温度T1を下降させる。このような処理を行った後、所定時間が経過すると、あらためて測定したT1およびT2からΔTを求め直す(S4)。このΔTが基準範囲内に収まれば(S5)、その条件で急冷を続ける。ただし、T1が低下しすぎると、溶湯粘度が上昇し、出湯が不安定になるため、T1の下限値は合金の液相線温度よりも50℃以上高い値に設定することが好ましい。\n\n【0057】\n\n上記の方法で溶湯温度T1を調節しても、ΔTが基準範囲内に収まらない場合は、ロール表面速度(周速度)を調節する(S6)。より詳細には、溶湯供給量を一定に保持する場合において、ΔTを小さくするときは、ロール表面速度を低下させ、ΔTを大きくするにはロール表面速度を増加させる。この処理を行った後、あらためて測定したT1およびT2からΔTを求め直す(S7)。このΔTが基準範囲内に収まれば、その条件で急冷を続ける(S8)。\n\n【0058】\n\n許容される範囲でロール表面速度を調節しても、ΔTが基準範囲内に収まらない場合は、再度、溶湯温度T1を変化させ、上述したプロセスを繰り返す。\n\n【0059】\n\nなお、ここで説明した手順は温度制御の一例に過ぎない。上記の例では、ΔTが所望範囲から外れた場合に、まず溶湯温度を調節しているが、溶湯温度の代わりに、または溶湯温度に加えて、溶湯供給レートを調節するようにしても良い。\n\n【0060】\n\n更に、ΔTではなく、T1およびT2の測定値の変動を別個に検知して、適当な急冷条件を調節するようにしてもよい。例えば、ΔTから所望の範囲内にあっても、T1が設定温度から許容できない程度ずれた場合は、前述の加熱装置の出力を調節するなどして出湯温度を制御することができる。なお、出湯温度は、溶解炉3の傾動角度を調節することによって貯湯容器4内に供給する溶湯の量を変化させても制御することができる。\n\n【0061】\n\n(実施形態2)\n\n以下、ストリップキャスト法を採用する場合について説明する。この場合、図3に示すストリップキャスト装置を用いることができる。図3の装置は、内部を不活性ガス雰囲気での減圧状態にすることができる不図示のチャンバ内に配置される。このストリップキャスティング装置は、合金原料を溶解するための溶解炉41と、溶解炉41から供給される合金溶湯43を急冷·凝固させるための冷却ロール47と、溶解炉41から冷却ロール47\n\nに溶湯43を導くシュート(案内手段)45とを備えている。\n\n【0062】\n\n溶解炉41には、合金原料を溶融するための高周波コイル(加熱装置)が備え付けられており、合金原料を溶融することによって作製した溶湯43をシュート45に対して略一定の供給量で供給することができる。この供給量は、溶解炉41を傾ける動作を制御することなどによって、任意に調節することができる。また、溶解炉41内で溶融した溶湯の温度は、高周波コイルに印加する高周波パワーを調節することによって制御可能である。\n\n【0063】\n\n冷却ロール47は、その外周面が銅などの熱伝導性の良好な材料から形成されており、例えば、直径30cm〜100cmで幅が15cm〜100cmの寸法を有する。冷却ロール47は、不図示の駆動装置によって所定の回転速度で回転することができる。この回転速度を制御することによって、冷却ロール47の周速度を任意に調節することができる。このストリップキャスティング装置による冷却速度は、冷却ロール47の回転速度などを選択することにより、約102℃/秒〜約105℃/秒の範囲で制御可能である。\n\n【0064】\n\nシュート45の溶湯を案内する面は、水平方向に対して角度(傾斜角度)αで傾斜し、シュート45の先端部と冷却ロールの表面との距離は数mm以下に保たれる。そして、シュート45は、その先端部と冷却ロール47の中心とを結ぶ線が水平方向に対して角度β(0°≦β≦90°)を形成するように配置される。シュート45の傾斜角度αは、1°≦α≦80°であることが好ましく、5°≦α≦60°の関係を満足することが更に好ましい。角度βは、10°≦β≦55°の関係を満足することが好ましい。\n\n【0065】\n\nシュート45上に供給された溶湯43は、シュート45の先端部から冷却ロール47の表面に対して供給され、冷却ロール47の表面に溶湯のパドル46を形成する。\n\n【0066】\n\nシュート45は、溶解炉41から所定の流量で連続的に供給される溶湯43を一時的に貯湯するようにして流速を遅延し、溶湯43の流れを整流することができる。シュート45に供給された溶湯43における溶湯表面部の流れを選択的に堰き止めることができる堰き止め板を設ければ、整流効果を更に向上させることができる。シュート45を用いることによって、冷却ロール47の胴長方向(軸線方向:紙面に垂直)において、一定幅にわたって略均一な厚さに広げた状態で、溶湯43を供給することができる。シュート45の溶湯案内面の傾斜角度αを調節することにより、溶湯供給速度を微調整できる。溶湯は、その自重により、シュート45の傾斜した案内面を流れ、水平方向(X軸方向)に平行な運動量成分をもつ。シュート45の傾斜角度αを大きくするほど、溶湯の流速は速くなり、運動量も大きくなる。\n\n【0067】\n\nシュート45は、上記の機能に加え、冷却ロール47に達する直前の溶湯3の温度を調整する機能をも有する。シュート45自体の熱容量などを調節する目的でシュート加熱装置を設けてもよい。\n\n【0068】\n\nシュート45は、冷却ロール47の外周面に対向するように配置された端部において、冷却ロールの軸線方向に沿って所定の間隔だけ離して設けられた複数の排出部を有していることが好ましい。この排出部の幅(溶湯の1つの流れの幅)は、好適には5mm〜30mmに設定され、より好適には7mm〜20mmに設定される。溶湯の流れの幅は、上記排出部の位置から離れるにつれ、横方向に広がる傾向があるが、シュート45に複数の排出部を設け、複数の溶湯流れを形成する場合は、隣接する溶湯流れが相互に接触しないようにすることが好ましい。このように、複数の溶湯流れを略平行に形成し、かつ、各溶湯流れの幅を規制することにより、全体としての溶湯供給量を大きくしながら、急冷合金の厚さばらつきを低減する効果が高められる。\n\n【0069】\n\nシュート45上に供給された溶湯43は、冷却ロール47の軸線方向に沿って、各排出部の幅と略同一幅を有して冷却ロール47と接触する。その後、冷却ロール47に所定の出湯幅で接触した溶湯43は、冷却ロール47の回転に伴って(冷却ロール47に引き上げられるようにして)ロール周面上を移動し、この移動過程において冷却される。\n\n【0070】\n\n本実施形態では、赤外線カメラを用い、図3に示す位置P1および位置P2で合金温度を測定する。赤外線カメラは、急冷装置の上部に配置し、複数条の溶湯流れを撮像エリア内にとらえることが好ましい。そうすることにより、複数条の合金について、各々の温度を検知することが可能となるからである。また、赤外線カメラと合金とを結ぶラインが、冷却ロールの回転軸と略垂直な関係にあると、冷却ロールの表面から剥離した合金薄帯が上限に揺れ動いても、温度計測が容易になる利点もある。\n\n【0071】\n\nなお、出湯温度を測定する位置P1は、溶解炉41からシュート45に注ぎ込む部分に限定されず、シュート45の先端部(冷却ロールの近傍)であっても良い。位置P1およびP2で合金温度を測定した後、実施形態1について述べた手順と同様の手順に従って急冷条件の制御を行う。\n\n【0072】\n\nなお、上記の図1および図3に示すような装置を用いて、本発明による急冷合金の製造方法を実施する場合、組成式が(Fe1-mTm)100-x-y-zQxRyMz(TはCoおよびNiからなる群から選択された1種以上の元素、QはBおよびCからなる群から選択された1種以上の元素、RはLaおよびCeを実質的に含まない1種以上の希土類金属元素、Mは、Al、Si、Ti、V、Cr、Mn、Cu、Zn、Ga、Zr、Nb、Mo、Ni、Hf、Ta、W、Pt、Pb、AuおよびAgからなる群から選択された少なくとも1種の金属元素)で表現される急冷合金を作製することができる。ここで、組成比率x、y、z、およびmは、それぞれ、10≦x≦30at%、2≦y【0073】\n\nこのような組成の急冷合金を作製する場合、非晶質相および平均粒径50nm以下の結晶相を含む急冷合金を作成することによって磁石特性に優れたナノコンポジット磁石を得ることができる。\n\n【0074】\n\nこのような組成のナノコンポジット磁石用急冷合金を作製する場合、T1-T2=ΔTを350℃以上800℃以下の目標値(例えば420℃)に設定する必要がある。この理由は、ΔTが350℃未満になると、冷却速度が遅すぎ、粗大なα-Feを含む組織が形成されるため、磁気特性の劣化を招くからであり、またΔTが800℃を超えると、急冷合金が略完全に非晶質化してしまう結果、その後に熱処理を行っても、優れた磁石特性を発現させることができないからである。\n\n【0075】\n\nΔTの目標値を本明細書では「設定温度差TO」と表現することにする。本発明における温度制御は、ΔTが設定温度差TOに対して±10℃以下の範囲内に入るように行うことが好ましい。そうすることにより、ΔTの標準偏差σを20℃未満に抑えることができる。ΔTの標準偏差σが20℃以上になると、急冷合金の金属組織にばらつきが大きくなり、所望の磁石特性を再現性良く実現することができなくなる。ΔTの標準偏差σのより好ましい値は15℃未満であり、12℃未満とすることが更に好ましい。\n\n【0076】\n\n[合金組成]\n\n本発明の急冷合金製造方法を適用してナノコンポジット磁石を作製する場合、上記の合金組成が好ましい理由を以下に説明する。\n\n【0077】\n\n上記の組成式におけるQはB(ほう素)またはC(炭素)の1種または2種である。Qの\n\n組成比率xが10at%未満になると、液体急冷法を用いても過冷却液体状態が得られず、平滑性の高い急冷合金を製造することができない。また、xが30at%を超えると、R2Fe14B型化合物相が充分に析出せず、硬磁気特性が発現しない。このため、Qの組成比率xは10at%以上30at%以下の範囲内に設定することが好ましい。xの更に好ましい範囲は、10at%以上20at%以下であり、さらに好ましい範囲は、10.5at%以上20at%以下である。なお、Qに占めるC割合は50%未満であることが好ましい。Bは、Fe3Bなどの鉄基硼化物の必須構成要素であるため、これらの化合物をソフト磁性相として含むナノコンポジット磁石を作製する場合には、Qの占めるBの比率が少ないと、ソフト磁性相の含有量が小さくなる。なお、本明細書において「Fe3B」は、Fe3Bと識別しにくいFe3.5Bも含むものとする。\n\n【0078】\n\n希土類元素Rは、永久磁石特性を発現するために必要なハード磁性相であるR2Fe14Bに必須の元素である。本発明におけるRは、PrおよびNd、Dy、Tbの1種または2種以上を含むことが好ましい。ただし、アモルファス生成能や結晶化温度を調整する目的で、これら以外の他の希土類元素で一部を置換してもよい。Rの組成比yは2at%を下回ると保磁力発現の効果が少なく好ましくない。一方、Rの組成比yが10at%を超えると、鉄および鉄基硼化物が析出しないため、ナノコンポジット組織が形成されず、高い磁化が得られない。このため、yの好ましい範囲は、2at%以上10at%未満である。yのより好ましい範囲は、3at%以上9.5at%以下であり、さらに好ましい範囲は4at%以上9.2at%以下である。\n\n【0079】\n\n上記元素の含有残余をFeで占め、また、Feの一部をCoで置換することで減磁曲線の角形性が改善され最大エネルギー積(BH)maxを向上させることができる。\n\n【0080】\n\n更に、Al、Si、Ti、V、Cr、Mn、Cu、Zn、Ga、Zr、Nb、Mo、Ni、Hf、Ta、W、Pt、Pb、AuおよびAgからなる群から選択された少なくとも1種の金属元素Mを添加しても良い。これらの添加元素Mの組成比率zが10at%を超える場合、磁化の低下を招来するため、好ましい範囲は0≦z≦10at%である。より好ましいzの範囲は、0.1≦z≦5at%である。\n\n【0081】\n\n【実施例】\n\n本実施例ではメルトスピニング装置を用い、以下のようにして合金溶湯の急冷を行った。\n\n【0082】\n\nまず、Nd8.5Fe77B11C1Ti2.5(at%)の合金組成となるように、純度99.5%以上のNd、Fe、B、C、およびTiの材料を用いて総量が20kgとなるように秤量し、溶解坩堝内に投入した。\n\n【0083】\n\n高周波加熱法により溶解坩堝内で合金溶湯を作製した後、溶解坩堝を傾転し、下方に位置するタンディッシュに合金溶湯を注いだ。タンディッシュは底部に内径2.0mmφのノズルを有しているため、合金溶湯はノズルから下方に排出される。タンディッシュに設けられたモリブデンヒータ(加熱装置)によって溶湯温度を1250℃に調節した。なお、本実施例では、タンディッシュ内に挿入した熱電対で溶湯温度を実測した。原料の溶解は圧力が35kPaのアルゴン雰囲気下において行った。\n\n【0084】\n\n溶湯は、ノズルの下方15mmの位置にある銅製ロールの外周面に供給され、急冷された。ロールは、その外周面の温度が室温程度に維持されるように内部が冷却されながら高速で回転する。このため、ノズルから出た合金溶湯はロール周面に接触して熱を奪われつつ、周速度方向に飛ばされることになる。合金溶湯は、ノズルを介して連続的にロール表面上に噴出するため、急冷によって凝固した合金は薄帯状に延びたリボンの形態を持つことになる。\n\n【0085】\n\n本実施例で採用する冷却ロール法(単ロール法)の場合、冷却速度はロール周速度および単位時間当たりの溶湯流下量によって規定される。本実施例では、溶湯供給レートを約4kg/分とし、ロール表面速度を13m/秒に設定した。その結果、平均厚さが63μmの急冷合金が得られた。\n\n【0086】\n\nこのとき、ノズルから出る溶湯およびロールから剥離する急冷合金の温度をニコン製赤外線カメラ(名称:サーマルビジョンLAIRD-3ASH)にて測定した。\n\n【0087】\n\n上記の赤外線カメラを用いて温度測定を行った撮像エリアを図4に示す。ΔT=T1-T2のT1には、上述したように熱電対で測定した溶湯温度(1250℃)を用いる。ただし、赤外線カメラを用いて図4の領域A0内における温度を測定し、その測定値を出湯温度T1として用いてもよい。\n\n【0088】\n\n本実施例では、溶湯温度T1および冷却過程における合金温度T2が、それぞれ、1200〜1300℃および400〜500℃となるため、ΔTが500℃を超える。本実施例で用いる赤外線カメラの場合、精度の高い測定が可能な温度範囲は500℃以下である。このため、1つの赤外線カメラを用いて温度測定を行うときは、溶湯温度T1および合金温度T2の両方を検知することが困難とので、溶湯温度T1の測定は熱電対で行うことにした。本実施例の条件とは異なってΔTが比較的小さい場合や、2つの赤外線カメラを用いて温度測定を行うる場合は、溶湯温度T1も合金温度T2も赤外線カメラで測定することが可能である。この場合は、領域A0内の多数の測定ポイントにおける温度を測定し、そのなかで最高値を示す温度をT1とすればよい。\n\n【0089】\n\n一方、T2には、領域A1〜A3内の多数の測定ポイントにおける温度を測定し、各領域A1〜A3における最高温度を用いる。冷却ロールから離れた合金薄帯は、高速で矢印方向に飛行してゆく際、上下に激しく揺れるが、揺れ動く合金薄帯の位置が各領域A1〜A3の上端·下端を外れることがほとんど生じないように各領域A1〜A3の垂直(上下)方向サイズが決定されている。また、各領域A1〜A3の水平方向サイズは、合金温度が冷却によって大きく低下することのない範囲に設定される。本実施例では、領域A1〜A3の各々が水平50画素×垂直130画素のサイズを割り当てている。\n\n【0090】\n\n本実施例で用いた赤外線カメラの仕様を以下の表1に示す。\n\n【0091】\n\n【表1】\n\n\n\n【0092】\n\n図5は、領域A1、A2、A3内を通過する急冷合金の温度変化を示している。縦軸が合金温度T(℃)、横軸が測定開始後の経過時間(秒)である。図5からわかるように、領域A3では合金温度の変動が大きいが、領域A1およびA2では、合金温度の変動が少なく安定している。領域A3における合金温度の変動が激しく生じている理由は、この位置\n\nにおける合金薄帯の上下動が激しく、しばしば合金薄帯が領域A3から外れるためであると考えられる。領域A3の垂直方向サイズを拡大すれば、激しい温度変動を抑制することが可能であるが、測定画素数が増えるため、領域内の最高温度を決定するために必要な演算処理に長い時間を要する弊害がある。\n\n【0093】\n\n以上のことから、領域A3での測定温度をT2として用いることは好ましくない。このため、本実施例では、領域A1の温度変化に基づいて、タンデッシュを加熱するモリブデンヒータの発熱量および溶湯供給レートを調節し、溶湯温度と急冷合金温度との差ΔTを400〜440℃の値に設定する制御を行った。なお、本実施例では、冷却ロールの表面周速度を13m/秒に固定した。温度測定の位置が一定の場合、好ましいΔTの値は、冷却ロールの周速度などに依存して変化する。\n\n【0094】\n\nなお、比較例として、上記の制御を行なわず、ΔTの標準偏差σが20℃以上となるようにした。比較例では、出湯温度T1を一定に保持したが、溶湯供給レートの制御は行わなかった。\n\n【0095】\n\n得られたΔTと標準偏差σの値を表2に示す。\n\n【0096】\n\n【表2】\n\n\n\n【0097】\n\n表2からわかるように、適正な制御を行った実施例では、標準偏差σが20℃以下に抑えられた。また、実施例のσ/ΔTは、いずれも、5%以下であったが、比較例におけるσ/ΔTは5%を越えていた。急冷条件を安定させるためには、σ/ΔTが5%以下となるようにすることが好ましい。\n\n【0098】\n\n上記方法で得られた急冷合金を600μm以下のサイズに粉砕した後、Ar流気中で700℃、15分の熱処理を行った。その結果、微細なNd2Fe14B相を主相とする永久磁石粉が得られた。永久磁石粉の磁気特性に関する測定結果と、透過型電子顕微鏡で観察した平均結晶粒径およびその標準偏差を表3に示す。\n\n【0099】\n\n【表3】\n\n\n\n【0100】\n\n表3からわかるように、比較例に比べて実施例における平均結晶粒径のばらつき(標準偏差)が小さく、残留磁束密度Brおよび(BH)maxなどの磁石特性についても、実施例が\n\nより高い値を示している。\n\n【0101】\n\n【発明の効果】\n\n本発明によれば、急冷過程における合金の温度変化を精密に制御することができるため、磁石特性に優れたナノコンポジット磁石用急冷合金を安定して製造することができる。その結果、磁石特性に優れたナノコンポジット磁石を量産することが可能となる。\n\n【図面の簡単な説明】\n\n【図1】(a)は、本発明による急冷合金を製造する方法に用いる装置の全体構成例を示す断面図であり、(b)は急冷凝固が行われる部分の拡大図である。\n\n【図2】温度制御の一例を示すフローチャートである。\n\n【図3】本発明による急冷合金の製造に用いることのできるストリップキャスト装置の構成を示す図である。\n\n【図4】本発明の実施例における温度測定領域A1〜A3を示す図である。\n\n【図5】図4における領域A1〜A3での測定温度の経時変化を示すグラフである。\n\n【符号の説明】\n\n1b、2b、8b、および9b  雰囲気ガス供給口\n\n1a、2a、8a、および9a  ガス排気口\n\n1    溶解室\n\n2    急冷室\n\n3    溶解炉\n\n4    貯湯容器\n\n5    出湯ノズル\n\n6    ロート\n\n7    回転冷却ロール\n\n21    溶湯\n\n22    合金薄帯\n\n41  溶解炉\n\n43  合金溶湯\n\n45  シュート(案内手段)\n\n47  冷却ロール', '【0001】\n\n技术领域\n\n本发明涉及一种制造用于生产永磁体的淬火合金的方法。特别地,对于通过精确地控制淬火条件来制造需要适当形成细晶相的淬火合金的方法,它适用于纳米复合材料,其中软磁和硬磁相是磁耦合的。\n\n【0002】\n\n发明背景\n\n目前,作为R-Fe-B磁铁,R2Fe.14硬磁相如B和Fe3B(FE.3.5具有组织结构的纳米复合活性磁体,其中包括诸如B的软磁相(高磁化铁磁相)或α-Fe已经开发。使用树脂材料以预定的形状固化,使用纳米复合材料永磁体的粉末作为各向同性键磁体。\n\n【0003】\n\n当制造纳米复合磁体时,它通常用作原料,无定形组织或淬火合金(也称为含有大量非晶组织或无定形相的淬火凝结合金“)。通常,该淬火合金是猝灭后立即含有无定形相的合金,并且通过热处理充分结晶,并且最终平均晶粒尺寸为10。-9m到10-6它变成了具有约M的细组织的磁性材料。\n\n【0004】\n\n热处理后磁性合金的组织结构主要取决于结晶热处理之前淬火合金的组织结构。因此,在淬火合金中沉淀的结晶相的类型和淬火合金中所含的无定形相的比对最终磁体特性具有重要作用。由于这种淬火合金的组织结构根据合金熔融金属的淬火条件而变化,因此淬火条件的控制对于生产具有优异磁特性的纳米复合磁体来制备永磁体。\n\n【0005】\n\n通常,作为制造淬火合金的方法,使用如图1所示的装置的液体猝灭方法。1是已知的。在该方法中,从具有底部的孔口的喷嘴注入熔融合金,在通过铜等形成的冷却辊上注射熔融合金,并且通过淬火产生非结晶的凝血合金。\n\n【0006】\n\n已经研究了这些方法,并通过学习磁性材料的大学和机构研究和报道。然而,本文使用的装置在喷嘴和喷射秤中仅是10g至几百g的合金,使得在这种用于纳米复合磁体的装置中的加工量是原料合金不能质量的 - 产生的。\n\n【0007】\n\n此外,在处理量增加的方法是例如JP-A-2-179803,JP-A-2-247305,JP-A-2-247306,JP-A-2-247307,JP- A-2-247308在JP-A-2-247309中描述了JP-A-2-247309,JP-A-2-247310。\n\n【0008】\n\n在该方法中,在将熔融炉中的熔融合金熔入熔融炉中的熔融合金到底部的容器中之后,通过向熔融金属添加恒压,熔融金属位于冷却辊的表面上容器。它被注入(下文中称为“熔体纺丝方法”)。通过将熔融金属通过喷嘴喷射在这种方式的同时,可以在冷却辊的顶部基本上垂直地注射具有相对较快的流速(熔融金属流动)的熔融金属的保护。\n\n。注入的熔融金属在冷却辊表面上形成桨(热水库),淬火桨叶的辊接触表面以产生薄的淬火合金。\n\n【0009】\n\n在上述熔融纺丝方法中,由于合金熔融金属和冷却辊之间的接触长度短,因此在冷却辊上没有完成淬火,并且在从冷却辊剥离后的高温状态(例如,700 ℃至900°C)合金化。在飞行期间冷却。因此,为了精确控制淬火条件,调节冷却辊的外围速度是不足的,并且需要调节熔融金属的压力和淬火气氛气体的压力,以及最佳需要找到淬火条件。是。\n\n【0010】\n\n然而,在熔体纺丝方法的情况下,如果治疗量增加到工业批量生产程度(例如,约1.5千克/分钟以上),注射喷嘴的比例随着增加的增加熔融金属供应量(熔融金属喷射率)严重。结果,熔融金属的量在加工过程中波动,因此也可以改变淬火条件,并且不能保持稳定的骤冷状态。\n\n【0011】\n\n当辊圆周速度设定为大于20m / s的值,并且产生基本上完全的非无量主的快速冷合金,即使骤冷条件略微发生变化,淬火合金的组织结构的大变化也是如此它没有出现。另一方面,当辊圆周速度设定在5m / s以上且20m / s或更高的范围内时,当产生含有50%体积或更高的淬火合金或更高的淬火合金时,执行淬火条件。如果晶相通过波动和冷却而粗糙,磁体特性降低。相反,如果冷却过度进行,则非晶相的体积比增加(例如,50%以上),并且随后的热处理可能难以获得适当的磁体结构。另外,当制造的快速冷合金的平均厚度为50μm以上时,可以容易地增加由于淬火条件的变化引起的磁特性的变化。\n\n【0012】\n\n如上所述,取决于淬火磁体的类型,控制窄范围内的淬火条件变得非常重要,但在熔体纺丝方法的情况下,存在淬火条件可能波动的问题。\n\n【0013】\n\n另一种制备淬火合金的方法称为条带铸造方法。在条带铸造方法中,从熔融炉向引导装置(射击)供应合金熔融金属,通过使合金熔融金属与冷却辊接触,产生淬火合金。斜槽控制熔融金属的流速,以临时存储熔融金属并整流流动,从而熔融金属导向装置,其实现稳定地连续供给熔融金属与冷却辊。与冷却辊的外周表面接触的熔融金属被拖动到旋转冷却辊,并沿辊圆周表面移动并在该过程中冷却。\n\n【0014】\n\n在条形铸造方法中,由于熔融金属和辊圆周方向上的外周表面之间的接触长度相对长,因此熔融金属的冷却基本上在辊上完成。另外,在条形铸造方法中,不使用喷嘴如熔融纺丝方法,以及在冷却辊上的合金熔融金属的连续供应,适用于批量生产,制造成本降低可以实现。\n\n【0015】\n\n本发明要解决的问题\n\n然而,为了通过条带铸造方法生产需要均匀地小型化晶体结构的纳米复合磁体的淬火合金,辊周速度需要比传统条带铸造方法所采用的辊圆周速度更快。如果辊圆周速度不加速,则晶相粗糙,并且最终磁体特性降低。因此,在通过条带铸造方法制造用于纳米复合磁体的淬火合金的情况下,必须以高速旋转冷却辊,如熔体纺丝方法的情况下,并且可以精确地控制淬火条件合金熔融金属。这将是困难的。\n\n【0016】\n\n如上所述,即使采用熔体纺丝方法和熔体铸造方法的淬火方法,难以精确地控制淬火条件,以制备具有所需组织结构的快速冷却合金,并且可重复地稳定地难以达到质量产生质量优良的质量作为纳米复合磁体的淬火合金,尤其是纳米复合材料磁体。\n\n【0017】\n\n本发明已经鉴于上述情况,本发明的目的是提供一种用于稳定地产生具有良好组织的淬火合金的制造方法。\n\n【0018】\n\n[解决问题的手段]\n\n根据本发明的淬火合金制造淬火合金的方法是通过使合金的熔融金属相对于旋转冷却辊与旋转冷却辊接触,从而产生淬火合金,从而获得含有晶相的合金的淬火合金。 ,补充合金在将合金的熔融金属供应到冷却辊的过程中,以及通过检测辐射的红外辐射来移动的合金的熔融金属,它包括测量合金温度和基于合金温度调节淬火条件的步骤。\n\n【0019】\n\n根据本发明的淬火合金制造淬火合金的方法是通过使合金的熔融金属相对于旋转冷却辊与旋转冷却辊接触,从而产生淬火合金,从而获得含有晶相的合金的淬火合金。 ,补充合金正在进行在将合金的熔融金属供应到冷却辊的过程中,以及通过检测发射的红外辐射来移动的合金的熔融金属,测量合金温度的步骤至少第一位置和合金温度在第二位置;第一位置处的合金温度和第二位置处的合金温度包括调节骤冷条件的过程,使得差ΔT包括在预定范围内。\n\n【0020】\n\n在一个优选实施例中,第一位置是在开始合金的凝固之前的位置,并且在从冷却辊剥离后第二位置是空气。\n\n【0021】\n\n在一个优选实施例中,由合金发出的红外检测由红外相机进行。\n\n【0022】\n\n在一个优选实施例中,红外相机在凝固合金的熔融金属的过程中设置在移动合金上方。\n\n【0023】\n\n在一个优选实施例中,第一和第二位置均包含在由红外相机选择的第一和第二区域中,并且在第一区域中,最高温度是第一位置的合金温度,最高第二区域中的温度是第二位置的合金温度。\n\n【0024】\n\n在一个优选实施例中,合金在第二位置处的移动速度为2米/秒或更高。\n\n【0025】\n\n在一个优选的实施方案中,隔离条件包括加热合金时的加热量,每单位时间将合金供应到冷却辊的每单位时间的量,以及冷却辊的周向速度。。\n\n【0026】\n\n在一个优选的实施方案中,当差ΔT不包括在预定范围内时,在加热合金时提供调节排出条件的步骤。在预定范围内时,加热合金。改变每单位时间量的第一步单位时间,第一步\n\n即使差ΔT不包括在预定范围内,它也包括改变冷却辊的圆周速度的第二步骤。\n\n【0027】\n\n在一个优选的实施方案中,合金的组合式式是(Fe)1-mT.m的)100-x-y-z问:xR.yM.z(t是选自Co和Ni的组中的一个或多个元素,Q是选自B和C组成的一个或多个元素,并且R基本上不含La和Ce。上述稀土金属元素, M由Al,Si,Ti,V,Cr,Mn,Cu,Zn,Ga,Zr,Nb,Mo,Ni,Hf,Ta,W,Pt,Pb,Au和Ag表示,它由至少一种金属表示从组中选择的元素,以及组合物比率X,Y,Z和M为10≤x≤30,%,2≤y【0028】\n\n在一个优选的实施方案中,冷却步骤包括使用在内径超过1mm的喷嘴孔将合金熔融金属喷射到冷却辊的表面的步骤。\n\n【0029】\n\n在一个优选的实施方案中,冷却过程将合金熔融金属供应到引导装置上,以相对于水平方向形成1至80°的角度,以及带冷却辊的接触面积中的合金熔融金属。包含步骤移动。\n\n【0030】\n\n在一个优选的实施方案中,冷却过程将合金熔融金属的流动通过引导装置分离成多个区域,并且沿着冷却辊的轴向调节每种类型的宽度至预定尺寸。包括。\n\n【0031】\n\n在一个优选的实施方案中,第二位置处的合金温度是针对多个状态中的至少一个测量的温度。\n\n【0032】\n\n在一个优选的实施方案中,第二位置处的合金温度是对多种制品中包含的一些物品测量的温度的平均值。\n\n【0033】\n\n根据本发明的制造永磁体的制造方法包括制备上述任何快速冷却合金的步骤,以及加热紧固合金的步骤,以及使用快速金金属粉末制备模制体的过程。\n\n【0034】\n\n发明内容\n\n根据本发明的淬火合金的制造方法发出了生产合金的熔融金属的步骤,以及将合金的熔融金属供应到冷却辊的步骤,并且在该过程中发出了移动的合金凝固合金的熔融金属。通过检测红外光,测量合金温度的步骤及基于合金温度调节淬火条件的步骤。\n\n【0035】\n\n根据本发明的优选实施例,通过检测由移动合金发射的红外线,测量至少第一位置的合金温度和第二位置处的合金温度,并且在第一位置调节骤冷条件因此,合金温度与第二位置处的合金温度之间的差ΔT包括在预定范围内。这里,“移动合金”不仅意味着凝固状态的合金,而且还意味着通过合金固化的合金,并通过淬火通过淬火固化的合金。此外,本说明书中的“淬火条件”不仅是辊上的淬火条件,而且还为淬火器(熔融金属温度,淬火室中大气的类型/压力以及供水率的各种操作参数。卷等)它应广泛包括在内。\n\n【0036】\n\n如果用于检测由合金发出的红外光,则图像高速高速\n\n可以适当地检测待摇曳于上限的合金带的温度。红外相机是通过诸如CCD的光接收元件接收由成像区域中的物体发射的物体发射的红外辐射,并通过光电转换输出根据红外强度的电位。根据红外相机,可以实时检测成像区域中大量点处对象的温度分布。可测量点对应于光接收元件的有效像素的数量。当有效像素的数量是例如水平100×垂直100时,可以同时检测到成像区域中10000点处的物体温度。因此,如果以高速移动的合金设置在成像区域中,则可以精确地叙述从熔融金属状态改变到凝固状态的过程中合金的温度。本发明中使用的红外相机的有效像素的数量优选为300或更多的水平300×垂直。\n\n【0037】\n\n通过检测所出现合金的红外线,在淬火开始之前测量合金熔融金属的温度T1和淬火过程中的合金温度T2,温度差ΔT(= T1-T2)可以是实时测量。通常,尽管合金熔融金属(水温)的温度在预定范围内容易被控制在预定范围内,但淬火过程中的合金温度容易波动,并且难以在预定范围内控制。特别地,当熔融金属供应速率大于1kg / s时,从熔融金属产生大的传热,从而冷却辊的表面温度趋于过度升高,热提取效果趋于降低。因此,即使加热温度(T1)保持基本恒定,T2可能上升,ΔT(= T1-T2)可能随时间变化。 ΔT的变化涉及淬火合金的组织结构的变化,并最终降低磁体特性。\n\n【0038】\n\n在本发明中,通过检测高速(5m / s或更高)移动的合金的发射红外辐射,控制骤冷条件,使得ΔT保持在预定范围内。具体地,当ΔT从预定范围中出来时,通过改变影响骤冷条件的控制参数,ΔT落在设定范围内。\n\n【0039】\n\n作为影响骤冷条件的控制参数,提及熔融金属供应速率,冷却辊的透射率等的加热量(加热器输出)。通过适当地控制这些参数,可以降低ΔT的变化并抑制ΔT的标准偏差σ(例如,小于20℃),因此它用具有均匀组织的淬火合金制造,并可再现做。\n\n【0040】\n\n在获得ΔT所需的温度T1和T2中,优选在熔融金属接触冷却辊之前测量温度T1。在熔体纺丝方法的情况下,测量喷嘴的尖端和冷却辊表面之间的熔融金属温度,或者测量直接位于中间包坩埚上方的部分的熔融金属温度,并且可以是温度设置为t1。此外,在条带铸造方法的情况下,例如,可以测量喷射尖端(冷却辊侧)处的熔融金属温度,并且可以设定T1。\n\n【0041】\n\n另一方面,可以在被认为具有一定程度的冷却程度的位置测量温度T2,并且选择该位置,使得ΔT是适当的尺寸。例如,当冷却辊的表面圆周速度相对较快时,合金带与冷却辊的表面分离,优选测量冷却气氛期间的温度,并且优选设定温度T2。然而,如果冷却辊的周向速度相对较慢,即使在离开冷却辊的表面之前也可以进行足够的冷却,因此测量冷却辊上的合金的温度,并且温度为T2。他们可以是。\n\n【0042】\n\n在下文中,将描述本发明的优选实施例。\n\n【0043】\n\n实施例1\n\n在本实施例中,例如,使用图1所示的淬火装置(熔融纺丝装置)制造原料合金。当生产含有稀土元素R和易氧化的Fe的原料合金时,优选在惰性气体气氛中进行合金制造方法,以防止氧化。作为惰性气体,可以使用惰性气体或诸如氦气或氩气的氮气。另外,由于氮气与稀土元素R相对容易地反应,因此优选使用稀有气体,例如氦气或氩气。\n\n【0044】\n\n图1的装置包括:图1包括原料合金熔化室1和能够保持真空或惰性气体气氛并调节压力的快速冷却室2。图。图1A是整体配置图。图1B是局部放大的视图。\n\n【0045】\n\n如图1所示。如图1A所示,熔化室1溶解在高温下混合为所需的磁铁合金组合物,以及在底部的热水供应喷嘴5的热水储存容器中的料理材料20。4和加工原料供应装置8,用于在抑制大气进入的同时将配合材料供应到熔融炉3。热储水容器4存储原料合金的熔融金属21,并具有加热装置(未示出),其可以将水分温度保持在预定水平。\n\n【0046】\n\n淬火室2设置有旋转冷却辊7,用于快速固化从出口喷嘴5发射的熔融金属21。此外,在本实施例中,红外相机设置在淬火室2中,并且在图1B中所示的位置P1和P2中的合金温度。\n\n【0047】\n\n在该装置中,在预定范围内控制熔融室1和淬火室2中的气氛和其压力。为此,在装置的适当位置处提供气氛气体供应端口1b,2b和8b和气体排气口1a,2a和8a。特别地,气体排气口2a连接到泵,因为淬火室2中的绝对压力在30kPa至常压(大气压)(优选为100kPa或更小)的范围内。通过改变增溶剂1的压力,可以调节来自喷嘴5的熔融金属的喷射压力。\n\n【0048】\n\n熔化炉3倾斜,并且熔融金属21经由根部6适当地倒入热水储存容器4中。熔融金属21通过热水储存容器4中的加热装置(未示出)加热。\n\n【0049】\n\n热水储存容器4的热水供应喷嘴5设置在熔化室1和淬火室2之间的隔板中,并将熔融金属21流下在热水储存容器4中流到冷却辊的表面7位于向下。热水供应喷嘴5的孔口直径设定为1.0mm或更大且4.0mm或更小(例如2.8mm)的范围内。当熔融金属21的粘度大时,熔融金属21在出口喷嘴5中不太可能流动,并且易于引起淬火合金的厚度,但在本实施例中,孔口直径扩展与现有技术相比。由于压力状态足够低于熔化室1,因此在熔化室1和淬火室2和热水之间形成大的压力差(差压为10kPa或更高)供应熔融金属21平滑地进行。\n\n【0050】\n\n在本实施例中,在本实施例中制造淬火合金。\n\n【0051】\n\n首先,由所需组合物式表示的原料合金的熔融金属21被制备,并储存在图1的增叠器1的热蓄水容器4中。接下来,熔融金属21在减压AR气氛中从供水喷嘴5加热到水冷却辊7上,通过与冷却辊7的接触淬火,并凝固。\n\n【0052】\n\n为了使淬火后的淬火合金(在热处理前)中含有的晶相的体积比,合金熔融金属的冷却速率为1×102〜十8它最好是℃/秒,1×102〜1×106进一步优选为℃/秒。\n\n【0053】\n\n通过冷却辊7冷却合金的熔融金属21的时间对应于接触旋转冷却辊7的外周表面以离开合金的时间,在此期间合金的温度降低,和合金的温度降低。它变成液态。此后,从冷却辊7分离过冷状态的合金并在惰性气氛中飞行。由于合金而被剥夺到大气气体的作用,而温度进一步减少,同时在批乐器中飞行。在本实施例中,由于大气气体的压力设定为30kPa至常压,因此加强了大气气体的散热效果。\n\n【0054】\n\n接下来,将参考图4描述在本实施例中执行的温度控制的示例。\n\n【0055】\n\n首先,在开始热水之后,使用红外相机测量位置P2处的合金温度(熔融金属温度)T1和位置P2处的合金温度(淬火合金温度)T2,以及T1-T2计算=ΔT(S1)。\n\n【0056】\n\n接下来,确定Δt是否在参考范围内(S2),如果ΔT在参考范围内,则在该条件下继续热水,并且如果获得必要量的淬火合金,则最终停止热供水。这里,当Δt出在参考范围时,使用设置在热水储存容器4(S3)中的加热装置(未示出)来改变熔融金属温度T1。更具体地,由于冷却辊减小冷却能力的结果,测量温度T2逐渐上升,并且如果ΔT超出参考,则通过降低加热装置的热值来熔融金属温度。降低T1 。在这样的处理之后,当经过预定时间时,从T1和T2再次获得ΔT(S4)。如果该ΔT在参考范围内(S5),则在该条件下继续淬火。但是,如果T1过低,则熔融金属粘度增加,由于热水变得不稳定,因此T1的下限值优选设定为50℃或更高的液相温度。合金。\n\n【0057】\n\n即使通过上述方法调节熔融金属温度T1,如果ΔT不在参考范围内,则调节辊表面速度(外围速度)(S6)。更具体地,当熔融金属供应量保持恒定时,当减小ΔT时,辊表面速度降低并且辊表面速度增加以增加ΔT。在此过程之后,从T1和T2再次获得ΔT(S7)。如果该ΔT落入参考范围内,则在该条件下继续淬火(S8)。\n\n【0058】\n\n如果在可接受的范围内调节辊表面速度,则如果ΔT不配合在参考范围内,则重复熔融金属温度T1,重复上述过程。\n\n【0059】\n\n这里描述的程序只是温度控制的一个例子。在上面的例子中,当ΔT超出所需范围时,首先调节熔融金属温度,而不是熔融金属温度,可以调节熔融金属供应速率而不是熔融金属温度。\n\n【0060】\n\n此外,代替Δt,可以单独检测T1和T2的测量值的变化以调整适当的骤降条件。例如,即使它在ΔT的期望范围内,如果T1从设定温度移位到不可接受的量,则可以调节加热装置的输出以控制输出温度。另外,即使通过调节熔化炉3的倾斜角度改变提供给热储水容器4中的熔融金属的熔融金属的量,也可以控制供水温度。\n\n【0061】\n\n实施例2.\n\n在下文中,将描述采用条带铸造方法的情况。在这种情况下,图3所示的条形铸件装置包括:可以使用图3所示的条带铸造装置。图1的装置。图3所示的设置在腔室(未示出)中,其可以在惰性气体气氛中处于压力还原状态。条带铸造装置是用于淬火和凝结从熔化炉41供应的合金原料和从熔炼炉47供应的合金熔炉41的合金炉41的冷却辊47\n\n提供通向熔融金属43的射击(引导装置)45。\n\n【0062】\n\n熔融炉41配备有用于熔化合金原料的高频线圈(加热装置),并提供通过将合金原料熔化为斜槽45基本恒定的供应量而产生的熔融金属43.能够。通过控制倾斜熔化炉41等的操作,可以通过任意调整该供电量。此外,通过调节施加到高频线圈的高频功率,可以控制在熔炉41中熔化的熔融金属的温度。\n\n【0063】\n\n冷却辊47由具有诸如铜的良好导热率的材料形成,并且具有15cm至100cm的宽度,例如,直径为30cm至100cm。冷却辊47可以通过驱动装置(未示出)以预定的旋转速度旋转。通过控制这种转速,可以任意调节冷却辊47的外围速度。通过选择冷却辊47等的转速,条带铸件装置的冷却速度为约10。2°C / s至约105它可控制在°C./sec的范围内。\n\n【0064】\n\n用于引导斜槽45的熔融金属的表面与相对于水平方向的角度(倾斜角)α倾斜,并且斜槽45的尖端与冷却辊的表面之间的距离保持在几毫米处或更少。然后,斜槽45设置成使得连接尖端部分和冷却辊47的中心的线相对于水平方向形成角度β(0°≤β≤90°)。斜槽45的倾斜角α优选为1°≤α≤80°,更优选为5°≤α≤60°。角度β优选地满足10°≤β≤55°的关系。\n\n【0065】\n\n在滑槽45上供应的熔融金属43从斜槽45的尖端供应到冷却辊47的表面,并在冷却辊47的表面上形成熔融金属的桨叶46。\n\n【0066】\n\n拍摄45可以通过临时将从熔融炉41连续供应到预定流速的熔融金属43延迟流速,并且可以整流熔融金属43的流动。如果提供了一种能够选择性地阻挡熔融金属表面部分在供应到斜槽45的熔融金属表面部分的流动的阻挡板,则可以进一步提高整流效果。通过使用斜槽45,熔融金属43可以在厚度延伸到冷却辊47的体长(轴向:垂直)中厚度延伸到基本均匀的厚度的状态。通过调节斜槽45的熔融金属引导表面的倾斜角α,可以精细调节熔融金属供应速率。熔融金属通过其自身重量流过斜槽45的倾斜引导表面,并且具有平行于水平方向(X轴方向)的运动量。斜槽45的倾斜角α越大,熔融金属的流速越快,动量越大。\n\n【0067】\n\n滑槽45还具有在除了上述功能之外在到达冷却辊47之前立即调节熔融金属3的温度的功能。可以提供喷射加热装置,以便调节滑槽45本身的热量等。\n\n【0068】\n\n斜槽45具有多个排出部分,其沿着沿着冷却辊的轴向设置在设置为面向冷却辊47的外周表面的端部的预定间隔。优选。排出部分的宽度(熔融金属的一个流动宽度)优选设定为5mm至30mm,更优选为7mm至20mm。熔体流动的宽度倾向于在横向方向上延伸,当它远离放电单元的位置时,但是当拍摄45设置有多个放电单元时,并且当形成多个熔融流时,相邻的熔融金属流优选地,它不彼此接触。如上所述,通过形成多个基本平行的熔融流动,并调节每个熔融流的宽度,降低淬火合金的厚度同时增加总熔融金属供应量的效果。它增强了。\n\n【0069】\n\n在斜槽45上提供的熔融金属43沿冷却辊47的轴向与冷却辊47接触。此后,与冷却辊47接触的熔融金属43保持在辊周表面上(使得冷却辊47可以拉到冷却辊47),并在该运动过程中冷却。。\n\n【0070】\n\n在本实施例中,在图2所示的位置P1和位置P2处测量合金温度。3使用红外相机。红外相机优选地放置在淬火装置的顶部,并且优选地捕获多个聚结磁通流入成像区域。通过这样做,可以检测多个合金的每个温度。另外,当连接红外相机和合金的线基本上垂直地连接到冷却辊的旋转轴时,即使用冷却辊的表面的合金稀释条带摇动上限,使温度测量的优点是制造温度测量。不知何故。\n\n【0071】\n\n注意,用于测量供水温度的位置P1不限于从熔化炉41倒到斜槽45的部分,并且可以是斜槽45的尖端部分(靠近冷却辊)。在定位位置P1和P2处测量合金温度之后,在类似于实施例1所述的过程之后,控制淬火条件。\n\n【0072】\n\n另外,当使用如图1所示的装置进行根据本发明的淬火合金制造淬火合金的方法,如图1和图1所示。如图3所示,组合式式是(Fe1-mT.m的)100-x-y-z问:xR.yM.z(t是选自Co和Ni的组中的一个或多个元素,Q是选自B和C组成的一个或多个元素,并且R基本上不含La和Ce。上述稀土金属元素, M由Al,Si,Ti,V,Cr,Mn,Cu,Zn,Ga,Zr,Nb,Mo,Ni,Hf,Ta,W,Pt,Pb,Au和Ag是由至少一个表示的淬火合金可以生产选自该组的金属元素。这里,组合物比率X,Y,Z和M以%,2≤y【0073】\n\n当生产这种组合物的淬火合金时,通过产生含有非晶相的淬火合金和平均粒径为50nm或更小的晶相可以获得磁体特性优异的纳米复合磁体。\n\n【0074】\n\n当产生这种组合物的纳米复合磁体的淬火合金时,需要将T1-T2 =ΔT设定为350℃或更高和800℃或更低的目标值(例如,420℃) 。这原因是,当Δt小于350℃时,冷却速率太慢,并且形成含有粗α-Fe的组织,这导致磁性的劣化,并且如果Δt超过800℃。这是因为即使淬火合金基本上完全完全无体化并随后热处理,也不能表达优异的磁体特性。\n\n【0075】\n\nΔT的目标值是“设定温差T”O表达。在本发明中温度控制,ΔT设定温差TO优选在±10℃或更低的范围内进入。通过这样做,ΔT的标准偏差σ可以抑制到小于20℃。当ΔT的标准偏差σ为20℃或更高时,淬火合金的金属结构的变化变大,并且不能以良好的再现性实现所需的磁体特性。 ΔT的标准偏差σ的更优选值小于15℃,更优选小于12℃。\n\n【0076】\n\n[合金组成]\n\n当施加本发明的淬火合金制造方法以产生纳米复合磁体时,下面描述了上述合金组合物优选的原因。\n\n【0077】\n\nQ在上述组合物式中是B(硼)或C(碳)中的一种或两种。问:\n\n当组合物比x小于10at%时,即使使用液体淬火方法,也不能获得过冷液态,并且不能制造高度平滑的淬火合金。此外,如果x超过30%,2Fe.14B型化合物相没有充分沉淀,并且不出现硬磁性。因此,优选将Q的组成比x在10at%或更高的范围内设定在10at%或更低的范围内。更优选的X范围为10at%以上,20at%或更少,更优选的范围为10.5,%以上,20at%以下。优选地,Q占据的C比率小于50%。 B是FE.3由于这些化合物是必需的组分,例如B,在产生含有这些化合物的纳米复合磁体作为软磁相的情况下,当Q占据的B的比率小时,软磁相的含量变小。变小。此外,“Fe3b“是fe3b很难识别b3.5B也包括在内。\n\n【0078】\n\n稀土元素R是表达永磁特性所需的硬磁相2Fe.14这是B的重要因素。本发明中的R优选包含PR和ND,DY,TB中的一种或多种。然而,为了调节非晶发电能力和结晶温度,一些其他稀土元素可以被其他稀土元素代替。如果R的组成比y小于2at%,则矫顽力表达的作用是不优选的。另一方面,如果R的组成比y超过10at以%,铁和铁基硼化物不沉淀,则不形成纳米复合组织,并且不能获得高磁化。因此,y的优选范围为2at%或更高,小于10at%。更优选的y范围为3at%以上,9.5at%以下,更优选的范围为4at%以上,9.2at%以下。\n\n【0079】\n\n元素的包含残余物被Fe,部分Fe被CO占用,以提高退磁曲线的大规模,以及最大能量产品(BH)max可以改善。\n\n【0080】\n\n此外,选自Al,Si,Ti,V,Cr,Mn,Cu,Zn,Ga,Zr,Nb,Mo,Ni,Hf,Ta,W,Pt,Pb,Au和可以添加物种的Ag金属元素m。当这些添加剂元素M的组成比Z超过10at%时,优选的范围为0≤z≤10,因为磁化减小。更优选的Z范围为0.1≤z≤5at%。\n\n【0081】\n\n【例子】\n\n在该实施方案中,使用熔融纺丝装置,并如下淬火合金熔融金属。\n\n【0082】\n\n第一,nd.8.5Fe.77B.11C1TI.2.5使用99.5%以上的纯度的材料称量Nd,Fe,B,C和Ti的总共99.5%或更多,并将其引入溶解坩埚中。\n\n【0083】\n\n在通过高频加热方法坩埚中制备合金熔融金属后,将溶解的坩埚倾斜,并将合金熔融金属倒入向下定位的中间包中。由于中间包在底部具有2.0mmφ的内径的喷嘴,因此合金熔融金属从喷嘴向下排出。通过在中间包中提供的钼加热器(加热装置)将熔融金属温度调节至1250℃。在本实施例中,通过插入中间包中的热电偶测量熔融金属温度。原料的溶解在氩气氛下进行,压力为35kPa。\n\n【0084】\n\n将熔融金属供应到铜辊的外周表面在喷嘴的下部15mm的下部15mm处并淬火。辊在冷却时以高速旋转,使得外周表面的温度保持在约室温。因此,从喷嘴发射的合金熔融金属与辊周表面接触,以在圆周速度方向上剥离热量。由于合金熔融金属通过喷嘴连续地喷射到辊表面上,因此通过淬火凝固的合金将具有在薄带中延伸的带的形式。\n\n【0085】\n\n在该实施例中采用的冷却辊方法(单辊方法)的情况下,冷却速率由辊周速度和每单位时间流畅的流动量限定。在该实施例中,熔融金属供应速率设定为约4kg / min,并且辊表面速度设定为13m / s。结果,获得平均厚度为63μm的淬火合金。\n\n【0086】\n\n此时,通过尼康红外相机(名称:热视力莱尔德 -  3.ASH)测量从熔融金属剥离的淬火合金的温度和从喷嘴剥离。\n\n【0087】\n\n使用上述红外相机进行温度测量的成像区域如图2所示。对于ΔT= T1-T2的T1,使用通过如上所述的热电偶测量的熔融金属温度(1250℃)。然而,图2的区域A0中的温度可以包括:可以使用红外相机测量图4所示的测量值,并且测量值可以用作加热温度T1。\n\n【0088】\n\n在该实施方案中,由于熔融金属温度T1和冷却过程中的合金温度T2分别为1200至1300℃和400至500℃,因此ΔT超过500℃。在本实施例中使用的红外相机的情况下,能够高精度测量的温度范围为500℃或更低。因此,当使用一个红外相机进行温度测量时,难以检测熔融金属温度T1和合金温度T2,因此通过热电偶进行熔融金属温度T1的测量。与该实施例的条件不同,当Δt相对较小时,或者当使用两个红外相机进行温度测量时,熔融金属温度T1也可以用红外相机测量合金温度T2。。在这种情况下,可以测量区域A0中大量测量点处的温度,并且指示最高值的温度可以是T1。\n\n【0089】\n\n另一方面,T2测量区域A1至A3的大量测量点处的温度,并且使用每个区域A1至A3中的最高温度。远离冷却辊的合金带在高速上沿箭头的方向飞行,剧烈摇摆在上部和下部,但摇摆合金薄带的位置几乎不会从每个上端和下端移除区域A1至A3。结果,确定每个区域A1至A3的垂直(上下)方向尺寸。此外,每个区域A1至A3的水平方向尺寸被设定为通过冷却不显着减少合金温度的范围。在本实施例中,区域A1至A3中的每一个被分配水平50像素×垂直130像素的尺寸。\n\n【0090】\n\n本例中使用的红外相机的规格如下表1所示。\n\n【0091】\n\n【表格1】\n\n\n\n【0092】\n\n图。图5示出了通过区域A1,A2和A3的淬火合金的温度变化。垂直轴是合金温度T(℃),水平轴是测量开始后的经过时间(秒)。从图5中可以看出,在区域A3中,合金温度的波动大,但在区域A1和A2中,合金温度的波动小且稳定。这个职位是为什么A3的合金温度波动的原因是剧烈的\n\n据认为,合金带的上部和下部运动是严重的,并且通常是因为合金带偏离区域A3。如果扩展区域A3的垂直尺寸,则可以抑制强烈的温度波动,但是测量的像素的数量增加,需要长时间才能确定该区域中最高温度所需的算术处理。存在不利影响。\n\n【0093】\n\n从上面,不优选使用区域A3中的测量温度作为T2。因此,在本实施例中,基于区域A1的温度变化调节钼加热器加热杆和熔融金属供应速率的热值,以及熔融金属温度与淬火合金温度之间的差ΔT进行400至440℃。进行控制以设定为值。在本实施例中,冷却辊的表面圆周速度固定为13米/秒。如果温度测量的位置是恒定的,则优选ΔT的值根据冷却辊的圆周速度而变化。\n\n【0094】\n\n另外,作为比较例,进行上述控制,ΔT的标准偏差为20℃或更高。在比较例中,热水温度T1保持恒定,但不进行熔融金属供给率的控制。\n\n【0095】\n\n所获得的ΔT和标准偏差σ的值如表2所示。\n\n【0096】\n\n[表2]\n\n\n\n【0097】\n\n从表2中可以看出,在适当控制的实施例中,标准偏差σ被抑制到20℃或更小。另外,尽管该示例的所有σ/ΔT为5%或更低,但比较例中的σ/ΔT超过5%。为了稳定淬火条件,优选使σ/ΔT为5%或更低。\n\n【0098】\n\n通过上述方法获得的快速冷凝合金被研磨成600μm以下的尺寸,然后在700℃下在AR流动下进行热处理15分钟。结果,很好的nd2Fe.14获得永磁面粉,其使B相作为主阶段。表3显示了永磁面粉的磁性特性的测量结果和通过透射电子显微镜观察的平均晶粒尺寸和标准偏差。\n\n【0099】\n\n[表3]\n\n\n\n【0100】\n\n从表3中可以看出,实施例中平均晶粒尺寸的变化(标准偏差)小于比较例的变化​​(标准偏差),以及残留磁通密度Br(bh)max磁铁特性的示例,例如\n\n显示了更高的值。\n\n【0101】\n\n【发明效果】\n\n根据本发明,由于可以精确地控制淬火过程中合金的温度变化,因此可以稳定地制造用于磁体特性优异的纳米复合材料磁体的淬火合金。结果,可以大量生产磁体特性优异的纳米复合材料磁体。\n\n[简要描述;简介]\n\n【图1】(a)是示出根据本发明的用于制造淬火合金的制造方法的装置的整体配置的整体构造的示例的横截面图,并且(b)是执行淬火凝固的部分的放大视图。\n\n【图2】图3是表示温度控制的一个例子的流程图。\n\n图3.图3是表示可用于制造根据本发明的淬火合金的带铸件的结构的图。\n\n图4.图3是表示本发明的一个例子中的温度测量区域A1至A3的图。\n\n图5.图3是表示图1中的区域A1至A3中的测量温度的时间依赖性变化的图。\n\n[标志的说明]\n\n1B,2B,8B和9B大气供气口\n\n1A,2A,8A和9A气排气口\n\n1增溶剂\n\n2突然冷却室\n\n3熔炉\n\n4个热水储存容器\n\n五家热水供应喷嘴\n\n6 roat.\n\n7旋转冷却辊\n\n21熔融金属\n\n22合金带\n\n41熔炉\n\n43合金溶剂\n\n45次(指导意味着)\n\n47冷却辊');
INSERT INTO `os_patent_instruction_text` VALUES (12928, 22757, 'BACKGROUND OF THE INVENTION\n\n[0001]1. Field of the Invention\n\n[0002]The present invention generally relates to a method for producing a permanent magnet, for use in, for example, motors and actuators of various types. More particularly, the present invention relates to a method for producing an iron-based rare earth alloy nanocomposite magnet including multiple ferromagnetic phases.\n\n[0003]2. Description of the Related Art\n\n[0004]Recently, it has become more and more necessary to further improve the performance of, and further reduce the size and weight of, consumer electronic appliances, office automation appliances and various other types of electronic equipment. For these purposes, a permanent magnet for use in each of these appliances is required to maximize its performance to weight ratio when operated as a magnetic circuit. For example, a permanent magnet with a remanence Br of about 0.5 T or more is now in high demand. Hard ferrite magnets have been used widely because magnets of this type are relatively inexpensive. However, the hard ferrite magnets cannot achieve the high remanence Br of about 0.5 T or more.\n\n[0005]An Sm—Co based magnet, produced by a powder metallurgical process, is currently known as a typical permanent magnet that achieves the high remanence Br of about 0.5 T or more. However, the Sm—Co based magnet is expensive, because Sm and Co are both expensive materials.\n\n[0006]Examples of other high-remanence magnets include an Nd—Fe—B based sintered magnet produced by a powder metallurgical process and an Nd—Fe—B based rapidly solidified magnet produced by a melt quenching process. An Nd—Fe—B based sintered magnet is disclosed in Japanese Laid-Open Publication No. 59-46008, for example, and an Nd—Fe—B based rapidly solidified magnet is disclosed in Japanese Laid-Open Publication No. 60-9852, for instance.\n\n[0007]The Nd—Fe—B based sintered magnet is mainly composed of relatively inexpensive Fe (typically at about 60 wt % to about 70 wt % of the total weight), and is much less expensive than the Sm—Co based magnet. Nevertheless, it is still expensive to produce the Nd—Fe—B based sintered magnet. This is partly because huge equipment and a great number of manufacturing and processing steps are required to separate and purify, or to obtain by reduction reaction, Nd, which usually accounts for about 10 at % to about 15 at % of the magnet. Also, a powder metallurgical process normally requires a relatively large number of manufacturing and processing steps by its nature.\n\n[0008]Compared to an Nd—Fe—B based sintered magnet formed by a powder metallurgical process, an Nd—Fe—B based rapidly solidified magnet can be produced at a lower cost by a melt quenching process. This is because an Nd—Fe—B based rapidly solidified magnet can be produced through relatively simple process steps of melting, melt quenching and heat treating. However, to obtain a permanent magnet of melt-quenched materials in bulk, a bonded magnet should be formed by compounding a magnet powder, made from a rapidly solidified alloy, with a resin binder. Accordingly, the magnet powder normally accounts for at most about 80 volume % of the molded bonded magnet. Also, a rapidly solidified alloy, formed by a melt quenching process, is magnetically isotropic.\n\n[0009]For these reasons, an Nd—Fe—B based rapidly solidified magnet produced by a melt quenching process has a remanence Br that is lower than that of a magnetically anisotropic Nd—Fe—B based sintered magnet produced by a powder metallurgical process.\n\n[0010]As disclosed in Japanese Laid-Open Publication No. 1-7502, a technique of adding, in combination, at least one element selected from the group consisting of Zr, Nb, Mo, Hf, Ta and W and at least one more element selected from the group consisting of Ti, V and Cr to the material alloy effectively improves the magnetic properties of an Nd—Fe—B based rapidly solidified magnet. When these elements are added to the material alloy, the magnet has increased coercivity HcJ and anticorrosiveness. However, the only known effective method of improving the remanence Br is increasing the density of the bonded magnet. Also, where an Nd—Fe—B based rapidly solidified magnet includes a rare earth element at about 6 at % or more, a melt spinning process, in which a melt of its material alloy is ejected against a chill roller, has often been used in the prior art to rapidly cool and solidify the material alloy at an increased rate.\n\n[0011]As for an Nd—Fe—B based rapidly solidified magnet, an alternative magnet material was proposed by R. Coehoorn et al., in J. de Phys, C8, 1998, pp. 669–670. The Coehoorn material has a composition including a rare earth element at a relatively low mole fraction (i.e., around Nd3.8Fe77.2B19, where the subscripts are indicated in atomic percentages) and an Fe3B type compound as its main phase. This permanent magnet material is obtained by heating and crystallizing an amorphous alloy that has been prepared by a melt quenching process. Also, the crystallized material has a metastable structure in which a soft magnetic Fe3B phase and a hard magnetic Nd2Fe14B phase coexist and in which crystal grains of very small sizes (typically on the order of several nanometers) are distributed finely and uniformly as a composite of these two crystalline phases. For that reason, a magnet made from such a material is called a “nanocomposite magnet”. It was reported that such a nanocomposite magnet has a remanence Br as high as about 1 T or more. But the coercivity HcJ thereof is relatively low, i.e., from about 160 kA/m to about 240 kA/m. Accordingly, this permanent magnet material is applicable only when the operating point of the magnet is about 1 or more.\n\n[0012]It has been proposed that various metal elements be added to the material alloy of a nanocomposite magnet to improve the magnetic properties thereof. See, for example, Japanese Laid-Open Publication No. 3-261104, U.S. Pat. No. 4,836,868, Japanese Laid-Open Publication No. 7-122412, PCT International Publication No. WO 003/03403 and W. C. Chan et. al., “The Effects of Refractory Metals on the Magnetic Properties of α-Fe/R2Fe14B-type Nanocomposites”, IEEE Trans. Magn. No. 5, INTERMAG. 99, Kyongiu, Korea, pp. 3265–3267, 1999. However, none of these proposed techniques are reliable enough to always obtain a sufficient “characteristic value per cost”. More specifically, none of the nanocomposite magnets produced by these techniques achieve a coercivity that is high enough to actually use it in various applications. Thus, none of these magnets can exhibit commercially viable magnetic properties.\n\nSUMMARY OF THE INVENTION\n\n[0013]In order to overcome the problems described above, preferred embodiments of the present invention provide a method for producing an iron-based alloy permanent magnet with excellent magnetic properties at a low cost and also provide a permanent magnet that achieves a coercivity HcJ that is high enough to actually use the magnet in various applications (e.g., HcJ≧about 550 kA/m) while maintaining a remanence Br of about 0.80 T or more.\n\n[0014]An iron-based rare earth alloy nanocomposite magnet according to a preferred embodiment of the present invention has a composition represented by the general formula (Fe1-mTm)100-x-y-zQxRyTiz, where T is at least one element selected from the group consisting of Co and Ni, Q is at least one element selected from the group consisting of B and C, and R is at least one rare earth element including substantially no La or Ce. The mole fractions x, y, z and m preferably satisfy the inequalities of: 10 at %2T14Q type compound having an average grain size of about 20 nm to about 200 nm and a ferromagnetic iron-based boride that exists in a grain boundary between the crystal grains of the R2T14Q type compound. The ferromagnetic iron-based boride is preferably dispersed in the grain boundary or present in the form of a film over the grain boundary to cover the surface of the crystal grains of the R2T14Q type compound at least partially.\n\n[0015]In a preferred embodiment of the present invention, the mole fractions x, y and z satisfy the inequalities of: 10 at %[0016]In another preferred embodiment of the present invention, the magnet includes crystalline phases, including the R2T14Q type compound and the ferromagnetic iron-based boride, at about 95 vol % or more in total and amorphous phases at about 5 vol % or less.\n\n[0017]More particularly, the magnet preferably includes the R2T14Q type compound at about 65 vol % to about 85 vol %.\n\n[0018]In still another preferred embodiment of the present invention, the crystal grains of the R2T14Q type compound have a Ti concentration of about 2 at % or less while a Ti concentration in the grain boundary between the crystal grains of the R2T14Q type compound is higher than the Ti concentration inside the crystal grains of the R2T14Q type compound.\n\n[0019]Specifically, the Ti concentration in the grain boundary between the crystal grains of the R2T14Q type compound is preferably about 7 at % or more.\n\n[0020]In an additional preferred embodiment of the present invention, the ferromagnetic iron-based boride has an average size of about 50 nm or less as measured along the thickness of the grain boundary.\n\n[0021]In yet another preferred embodiment of the present invention, the ferromagnetic iron-based boride is present in the form of a film having an average thickness of about 20 nm or less over the grain boundary between the crystal grains of the R2T14Q type compound.\n\n[0022]In a further preferred embodiment of the present invention, the ferromagnetic iron-based boride is dispersed in the grain boundary between the crystal grains of the R2T14Q type compound and has an average major axis length of about 1 nm to about 50 nm.\n\n[0023]In another preferred embodiment of the present invention, on an arbitrary cross section of the magnet, the crystal grains of the R2T14Q type compound have an average size that is greater than an average size of the ferromagnetic iron-based boride.\n\n[0024]In yet another preferred embodiment of the present invention, the mole fractions x and z satisfy the inequalities of 10 at %[0025]In an additional preferred embodiment of the present invention, the iron-based boride includes Fe3B and/or Fe23B6.\n\n[0026]In yet another preferred embodiment of the present invention, the magnet is in the shape of a thin strip having a thickness of about 10 μm to about 300 μm.\n\n[0027]In yet another preferred embodiment of the present invention, the magnet has been pulverized into powder particles. In this particular preferred embodiment, the powder particles preferably have a mean particle size of about 30 μm to about 250 μm.\n\n[0028]In yet another preferred embodiment of the present invention, the magnet has hard magnetic properties as represented by a remanence Br of about 0.80 T or more, a maximum energy product (BH)max of about 100 kJ/m3 or more and a coercivity HcJ of about 480 kA/m or more.\n\n[0029]More specifically, the magnet preferably has hard magnetic properties as represented by a remanence Br of about 0.85 T or more and a maximum energy product (BH)max of about 120 kJ/m3 or more.\n\n[0030]A bonded magnet according to a preferred embodiment of the present invention is obtained by molding a magnet powder, including a powder of the iron-based rare earth alloy magnet according to any of the preferred embodiments of the present invention described above, with a resin binder.\n\n[0031]Other features, elements, steps, characteristics and advantages of the present invention will become more apparent from the following detailed description of preferred embodiments thereof with reference to the attached drawings.\n\nBRIEF DESCRIPTION OF DRAWINGS\n\n[0032]FIGS. 1A and 1B schematically illustrate the structure of an iron-based rare earth alloy nanocomposite magnet according to a preferred embodiment of the present invention.\n\n[0033]FIG. 2A is a cross-sectional view illustrating an overall arrangement for a melt quenching machine for use to make a rapidly solidified alloy for the iron-based rare earth alloy magnet according to preferred embodiments of the present invention; and\n\n[0034]FIG. 2B illustrates part of the machine shown in FIG. 2A, where a melt is quenched and rapidly solidified, to a larger scale.\n\n[0035]FIG. 3 is a graph showing the demagnetization curve of a sample representing an example of preferred embodiments of the present invention.\n\n[0036]FIG. 4 is a graph showing the X-ray diffraction patterns of the sample that has been annealed.\n\n[0037]FIG. 5 is a photograph that was taken of an example of preferred embodiments of the present invention at a power of about 125,000 by observing the micro metal structure of the annealed sample with a transmission electron microscope.\n\n[0038]FIG. 6 is a photograph showing an FIM image that was taken of the example of preferred embodiments of the present invention by observing the metal structure of a needle-like sample with an atom probe field-ion microscope (APFIM).\n\n[0039]FIG. 7 is a graph showing the cumulative concentration profiles of Nd, B and Ti as measured in the depth direction for sample No. 2.\n\n[0040]FIG. 8A is a graph showing relationships between the Ti concentrations and the Nd concentrations in the regions Nos. 1 to 12 shown in FIG. 7; and\n\n[0041]FIG. 8B is a graph showing relationships between the Ti concentrations and the B concentrations in the regions Nos. 1 to 12 shown in FIG. 7.\n\nDETAILED DESCRIPTION OF PREFERRED EMBODIMENTS\n\n[0042]An iron-based rare earth alloy magnet according to a preferred embodiment of the present invention is a nanocomposite magnet formed by rapidly cooling and solidifying a melt of a rare earth-iron-boron based material alloy including Ti. This rapidly solidified alloy includes nanocrystalline phases. If necessary, the rapidly solidified alloy is heated and further crystallized.\n\n[0043]Generally speaking, if the mole fraction of a rare earth element R is set lower than about 10 at %, then an R2Fe14B phase, contributing to hard magnetic properties, decreases its volume percentage. In addition, an α-Fe phase nucleates earlier than the R2Fe14B phase, and easily increases its grain size excessively. Since the α-Fe phase has high magnetization, the magnetization of the resultant magnet increases as a whole. However, since the magnet includes the excessively large α-Fe phase, the loop squareness of its demagnetization curve deteriorates and its coercivity also decreases. In the prior art, attempts were made to increase the coercivity by decreasing the size of each and every crystalline phase (including the α-Fe phase that easily has an excessively large size) with the addition of some metal element. However, the resultant coercivity was still insufficient.\n\n[0044]The present inventors discovered and confirmed via experiments that if an appropriate amount of Ti is added to a material alloy including a rare earth element R at less than about 10 at % and B at about 10 at % to about 17 at %, then crystal grains of an R2T14Q type compound and an iron-based boride can be nucleated earlier and faster than the Fe phase in the molten alloy being cooled and solidified with the nucleation and excessive grain growth of the α-Fe prevented. The present inventors also discovered that by nucleating and growing the hard magnetic phase faster and earlier than the soft magnetic phase in this manner, nuclei of the iron-based boride with ferromagnetic properties can be created in the grain boundary between the R2T14Q crystals. Accordingly, if the ferromagnetic iron-based boride is grown in the crystallization process of the material alloy so as to cover the surface of the R2T14Q crystal grains without increasing the interfacial energy, then the iron-based boride, grown from the multiple nuclei, are dispersed temporarily but will soon be partially combined together on the surface of the R2T14Q crystal grains. As a result, the iron-based boride will form a sort of film or layer in the end. In this manner, the surface of the R2T14Q crystal grains is covered with the film of the iron-based boride at least partially.\n\n[0045]Preferred embodiments of the present invention provide a nanocomposite structure in which the R2T14Q crystal grains serving as a hard magnetic phase are separated from each other by a thin film of the iron-based boride serving as a soft magnetic phase (with an average thickness of about 20 nm or less) and/or fine particles thereof (with a major-axis size of about 1 nm to about 50 nm). That is to say, along the grain boundary of the R2T14Q crystal grains, the soft and hard magnetic phases are magnetically coupled together through exchange interactions. The exchange coupling between the hard and soft magnetic phases is produced mainly in their interface. Since the soft magnetic phase is present in the form of a film to cover the hard magnetic phase, the magnetic moment of most of the soft phase is magnetically constrained and therefore excellent magnetic properties are achievable. As a result, a structure that can function as an exchange spring magnet is formed. The present inventors also discovered that this magnetic coupling has been weakened by a weakmagnetic phase or a non-magnetic phase existing in the grain boundary.\n\n[0046]FIGS. 1A and 1B schematically illustrate the structure of a nanocomposite magnet according to a preferred embodiment of the present invention. Specifically, FIG. 1A is a cross-sectional view schematically illustrating the R2Fe14B and grain boundary phases in the magnet of this preferred embodiment. As shown in FIG. 1A, an iron-based boride (Fe—B) is present in the grain boundary phase. FIG. 1B is a perspective view illustrating the R2Fe14B phase and the iron-based boride. As shown in FIG. 1B, the iron-based boride is finely dispersed, and/or combined together like a film or layer, in the grain boundary, thereby partially covering the surface of the R2Fe14B phase. In other words, the iron-based boride existing in the grain boundary of the R2Fe14B phase is partially continuously arranged and partially discontinuously arranged.\n\n[0047]In this manner, according to preferred embodiments of the present invention, an iron-based boride with ferromagnetic properties is grown in the grain boundary or sub-boundary between the R2T14Q crystal grains so as to cover the surface of the R2T14Q crystal grains at least partially. As a result, a unique nanocomposite magnet structure, in which a fine (or thin) iron-based boride is present in the grain boundary or sub-boundary between the R2T14Q crystal grains, can be obtained. The term “grain boundary” used herein refers not only to “grain boundary” in the strict sense but also to any “sub-boundary”.\n\n[0048]The results of experiments conducted by the present inventors revealed that particularly when the iron-based boride with ferromagnetic properties formed a thin film over the surface of R2T14Q crystal grains in the grain boundary thereof, a nanocomposite magnet with excellent magnetic properties is obtained. In preferred embodiments of the present invention, the soft magnetic phase, existing thinly in the grain boundary, preferably accounts for about 10 vol % to about 40 vol % of the entire magnet.\n\n[0049]A structure like this is realized by nucleating and growing the R2T14Q crystal grains faster and earlier than crystal grains of other soft magnetic phases through the addition of Ti and then by precipitating the iron-based boride in the gap (or in the grain boundary) between the R2T14Q crystal grains. That is to say, it is not until the R2T14Q crystal grains have been sufficiently nucleated and grown that the soft magnetic phase is allowed to grow in the grain boundary thereof. Accordingly, the grain growth of the soft magnetic phase in the grain boundary portion is constrained by the R2T14Q crystal grains. The crystal lattice of the soft magnetic phase that has been formed in this manner does not match with that of the hard magnetic phase. The structure of this nanocomposite magnet is different from that of an Fe3B/R2Fe14B type nanocomposite magnet in this respect also. Specifically, in an Fe3B/R2Fe14B type nanocomposite magnet, including about 2 at % to about 6 at % of rare earth element R and about 15 at % to about 20 at % of boron (B), soft magnetic Fe3B phase and hard magnetic R2Fe14B phase are formed through a phase transformation process. That is to say, the soft magnetic Fe3B phase precipitates before the hard magnetic R2Fe14B phase nucleates. In that case, the soft magnetic phase cannot be present in the film shape. Thus, the crystal lattice of Fe3B is observed as partially matching with that of R2Fe14B.\n\n[0050]In the preferred embodiments of the present invention, as R2T14Q crystal grains nucleate and grow, Ti, which has been distributed substantially uniformly in a molten alloy, is forced into, and condensed in, the grain boundary of the R2T14Q crystal grains. The present inventors believe the reason is that Ti cannot exist in a chemically stabilized state inside the R2T14Q crystal grains. According to the experimental data collected by the present inventors, the Ti condensed in the grain boundary phase existed at a concentration of about 5 at % to about 30 at % in the grain boundary. However, it was not clear exactly in what form Ti existed in the grain boundary phase.\n\n[0051]Hereinafter, an iron-based rare earth alloy magnet according to preferred embodiments of the present invention will be described in further detail.\n\n[0052]In various preferred embodiments of the present invention, the iron-based rare earth alloy magnet preferably has a composition represented by the general formula: (Fe1-mTm)100-x-y-zQxRyTiz. In this formula, T is preferably at least one element selected from the group consisting of Co and Ni, Q is preferably at least one element selected from the group consisting of B and C, and R is preferably at least one rare earth element including substantially no La or Ce. The mole fractions x, y, z and m preferably satisfy the inequalities of 10 at %2T14Q type compound and a ferromagnetic iron-based boride that have been magnetically coupled together through exchange interaction. The ferromagnetic iron-based boride has preferably grown to form a film in the grain boundary between the R2T14Q crystal grains and cover the surface of the R2T14Q crystal grains as a whole.\n\n[0053]The iron-based rare earth alloy magnet according to this preferred embodiment of the present invention preferably includes a rare earth element at less than about 10 at %. However, the iron-based boride with ferromagnetic properties has precipitated in the grain boundary of the main phase. Accordingly, the magnet can exhibit comparable (or even increased) magnetization (or remanence Br) and improved loop squareness of the demagnetization curve compared to a magnet that does not contain Ti.\n\n[0054]In the iron-based rare earth alloy magnet according to the present preferred embodiment of the present invention, the crystal grains of its main phase with ferromagnetic properties are thinly covered with the iron-based boride as a soft magnetic phase. Accordingly, the crystal grains of these two main phases are magnetically coupled together through exchange interaction. Consequently, the alloy as a whole can exhibit excellent loop squareness in its demagnetization curve.\n\n[0055]The iron-based rare earth alloy magnet according to this preferred embodiment of the present invention preferably includes iron-based borides and α-Fe that have saturation magnetizations approximately equal to, or even higher than, that of the R2T14Q (typically, Nd2Fe14B) phase. Examples of the iron-based borides include Fe3B (with a saturation magnetization of about 1.5 T) and Fe23B6 (with a saturation magnetization of about 1.6 T). In this case, the Nd2Fe14B phase has a saturation magnetization of about 1.6 T and the α-Fe phase has a saturation magnetization of about 2.1 T.\n\n[0056]Normally, where the mole fraction x of B is greater than about 10 at % and the mole fraction y of the rare earth element R is about 6 at % to about 8 at %, R2Fe23B3 is produced unless Ti is added. However, even when a material alloy with such a composition is used, the addition of Ti can produce R2Fe14B, Fe23B6 and Fe3B, not R2Fe23B3, in preferred embodiments of the present invention. These iron-based borides contribute to increasing the magnetization. It should be noted that “Fe3B” herein includes Fe35B, which is hard to distinguish from Fe3B.\n\n[0057]In various preferred embodiments of the present invention, the rapidly solidified alloy has either a structure in which almost no α-Fe phase with an excessively large grain size has precipitated but an R2T14Q type phase with a very small grain size exists instead, or a structure in which an R2T14Q type phase with a very small grain size and an amorphous phase coexist. As used herein, the term “amorphous phase” means not only a phase in which the atomic arrangement is sufficiently disordered, but also a phase including embryos for crystallization, extremely small crystalline regions (size: several nanometers or less), and/or atomic clusters. More specifically, the term “amorphous phase” refers to any phase having a crystal structure that cannot be defined by X-ray diffraction analysis or TEM observation. Stated otherwise, any phase having a crystal structure clearly identifiable by X-ray diffraction analysis or TEM observation will be herein referred to as a “crystalline phase”.\n\n[0058]In the prior art, if a molten alloy with a composition similar to that of the preferred embodiments of the present invention (i.e., a composition including all the elements included in the inventive composition but Ti) is cooled relatively slowly, the resultant alloy will have a structure in which a lot of α-Fe phase has grown coarsely. Thus, when the alloy is heated and crystallized after the cooling, the α-Fe phase will increase its grain size excessively. Once soft magnetic phases, including the α-Fe phase, have grown too much, the magnetic properties of the alloy deteriorate significantly, thus making it virtually impossible to produce a quality permanent magnet from such an alloy.\n\n[0059]Only when Ti is added to the material alloy, the hard magnetic phase will nucleate and grow faster and earlier than any other phase and then an iron-based boride with ferromagnetic properties will precipitate in the grain boundary between the crystal grains of the main phase. Thereafter, the iron-based boride precipitated will soon be partially combined together to form a continuous film. As a result, a structure in which the surface of the crystal grains of the main phase is thinly covered with that film is formed.\n\n[0060]If any of the other metal elements (e.g., Nb, V, Cr, etc.), excluding Ti, is added, the grain growth of the α-Fe phase advances remarkably in a relatively high temperature range in which the α-Fe phase grows rapidly, and the magnetization direction of the α-Fe phase cannot be effectively constrained by the exchange coupling between the α-Fe and hard magnetic phases. As a result, the demagnetization curve will have greatly deteriorated loop squareness. It should be noted that even if Nb, Mo or W is added instead of Ti, good hard magnetic properties, including superior loop squareness of the demagnetization curve, are achievable by thermally annealing the alloy in a relatively low temperature range where no α-Fe phase precipitates. In an alloy that has been annealed at such a low temperature, however, R2Fe14B crystalline particles would be dispersed in non-magnetic amorphous phases and the alloy does not have large remanence Br. Also, if the alloy is annealed at an even higher temperature, then the α-Fe phase nucleates and grows out of the amorphous phases. Unlike the situation where Ti is added, the α-Fe phase rapidly grows and increases its grain size excessively after its nucleation. As a result, the magnetization direction of the α-Fe phase cannot be effectively constrained anymore by the exchange coupling between the α-Fe and hard magnetic phases, and the loop squareness of the demagnetization curve deteriorates considerably.\n\n[0061]On the other hand, where V or Cr is added instead of Ti, the magnetic moment of these additive metal elements is coupled anti-ferromagnetically to the magnetic moment of Fe to form a solid solution, thus decreasing the magnetization significantly.\n\n[0062]In contrast, where Ti is added to the material alloy, the crystallization kinetics of the α-Fe phase is slowed down, i.e., it takes a longer time for the α-Fe phase to nucleate and grow. Thus, the present inventors believe that the Nd2Fe14B phase starts to nucleate and grow before the α-Fe phase has grown coarsely. For that reason, if Ti is added, crystal grains of the Nd2Fe14B phase can be grown sufficiently and distributed uniformly before the α-Fe phase has grown too much.\n\n[0063]Accordingly, only when Ti is added, the crystal grain coarsening of the α-Fe phase is minimized as intended, and therefore, iron-based borides with ferromagnetic properties can be obtained. Furthermore, Ti, as well as B and C, plays an important role as an element that delays the crystallization of Fe initial crystals (i.e., γ-Fe that will be transformed into α-Fe) and thereby facilitates the production of a supercooled liquid during the melt quenching process. Thus, even if a melt of the material alloy including Ti is rapidly cooled and solidified at a relatively low cooling rate of about 102° C./sec to about 105° C./sec, a rapidly solidified alloy, in which the α-Fe phase with an excessively large grain size has not precipitated but which includes the nanocrystalline R2Fe14B phase at about 60 vol % or more (and sometimes iron-based borides as well), can be obtained.\n\nPreferred Composition\n\n[0064]Q may be either B (boron) only or a combination of B and C (carbon). The ratio of C to Q is preferably about 0.25 or less.\n\n[0065]If the mole fraction x of Q is about 10 at % or less, then it is difficult to make the desired rapidly solidified alloy, in which the nanocrystalline R2Fe14B and amorphous phases coexist, at the low cooling rate of about 102° C./sec to about 104° C./sec. Also, even if the rapidly solidified alloy is annealed after that, the resultant HcJ of the alloy will be less than about 400 kA/m. In addition, a strip casting process, which is one of the most cost-effective techniques among various rapid cooling methods, cannot be adopted in that case, and the price of the resultant permanent magnet product increases unintentionally. On the other hand, if the mole fraction x of Q exceeds about 17 at %, then the iron-based boride will start to nucleate almost simultaneously with the R2Fe14B phase, and will grow excessively in the end. As a result, the desired nanocomposite structure, in which the iron-based boride phase is distributed uniformly in, or present in the form of a film disposed over the grain boundary of the R2Fe14B phase, cannot be obtained, and the resultant magnetic properties deteriorate.\n\n[0066]In view of these considerations, the mole fraction x of Q is preferably greater than about 10 at % and equal to or less than about 17 at %. A more preferable upper limit of x is about 16 at % and an even more preferable upper limit of x is about 15 at %.\n\n[0067]The (atomic) ratio p of C to Q preferably ranges from about 0 to about 0.25. To achieve the effects expected from the additive C, the C ratio p is preferably equal to or greater than about 0.01. The reason is as follows. If p is much smaller than about 0.01, then almost no expected effects are achievable even if C is added. On the other hand, if p is far greater than about 0.25, then the volume percentage of the α-Fe phase produced increases too much, thereby causing deterioration of the resultant magnetic properties. The lower limit of the ratio p is preferably about 0.02, while the upper limit thereof is preferably about 0.20. More preferably, the ratio p is from about 0.02 to about 0.17.\n\n[0068]R is at least one element selected from the rare earth elements (including yttrium). Preferably, R includes substantially no La or Ce. This is because if La or Ce is included, R (typically Nd) included in the R2Fe14B phase is replaced with La or Ce, thus decreasing the coercivity and deteriorating the loop squareness of the demagnetization curve. However, the magnetic properties will not be affected so seriously if a very small percentage (i.e., about 0.5 at % or less) of La or Ce exists as an', '发明背景 \n\n [0001] 1.发明领域 \n\n [0002] 本发明总体上涉及一种用于例如在各种类型的电动机和致动器中使用的永磁体的制造方法。 更具体地,本发明涉及一种用于制造包括多个铁磁相的铁基稀土合金纳米复合磁体的方法。 \n\n [0003] 2.相关技术的描述 \n\n [0004] 近来,变得越来越有必要进一步改善消费电子设备,办公自动化设备和各种其他类型的电子设备的性能,并进一步减小其尺寸和重量。 为了这些目的,需要在这些电器的每一种中使用的永磁体在作为磁路工作时最大化其性能重量比。 例如,剩磁为B的永磁体 r  现在对约0.5 T或更高的需求量很大。 由于这种类型的磁体相对便宜,因此硬铁氧体磁体已被广泛使用。 但是,硬铁氧体磁体无法实现高剩磁B r  约为0.5 T或更多。 \n\n [0005] 目前,通过粉末冶金工艺生产的基于Sm-Co的磁体是获得高剩磁B的典型永磁体。 r  约为0.5 T或更多。 然而,基于Sm-Co的磁体是昂贵的,因为Sm和Co都是昂贵的材料。 \n\n [0006] 其他高剩磁磁体的实例包括通过粉末冶金工艺生产的Nd-Fe-B基烧结磁体和通过熔融淬火工艺生产的Nd-Fe-B基快速凝固磁体。 例如,在日本特许公开第59-46008号中公开了一种基于Nd-Fe-B的烧结磁体,并且在日本特许公开第60-9852号中公开了一种基于Nd-Fe-B的快速凝固磁体。  , 例如。 \n\n [0007] Nd-Fe-B基烧结磁体主要由相对便宜的Fe(通常占总重量的约60wt%至约70wt%)组成,并且比Sm-Co基磁体便宜得多。 然而,生产基于Nd-Fe-B的烧结磁体仍然很昂贵。 这部分是因为需要大量的设备以及大量的制造和加工步骤来分离和纯化或通过还原反应获得Nd,Nd通常占磁体的约10at%至约15at%。 同样,粉末冶金工艺由于其性质,通常需要相对大量的制造和加工步骤。 \n\n [0008] 与通过粉末冶金工艺形成的基于Nd-Fe-B的烧结磁体相比,可以通过熔融淬火工艺以较低的成本生产基于Nd-Fe-B的快速凝固磁体。 这是因为可以通过相对简单的熔融,熔融淬火和热处理工艺步骤来生产基于Nd-Fe-B的快速凝固磁体。 然而,为了获得散装熔融淬火材料的永磁体,应该通过将由快速凝固的合金制成的磁体粉末与树脂粘合剂混合来形成粘结磁体。 因此,磁体粉末通常占模制粘结磁体的至多约80体积%。 而且,通过熔融淬火工艺形成的快速凝固的合金是磁各向同性的。 \n\n [0009] 由于这些原因,通过熔融淬火工艺生产的基于Nd-Fe-B的快速凝固磁体具有剩磁B r  其比通过粉末冶金法制造的磁各向异性Nd-Fe-B基烧结磁体的磁体低。 \n\n [0010] 如日本特开平1-7502号公报中所公开的,一种技术是将选自Zr,Nb,Mo,Hf,Ta和W的至少一种元素和选自至少一种的其他元素组合起来添加的技术。 从Ti,V和Cr组成的组到材料合金,都可以有效地改善Nd-Fe-B基快速凝固磁体的磁性能。 将这些元素添加到材料合金中后,磁体的矫顽力H增加 J 和防腐性。 但是,提高剩磁B的唯一已知有效方法 r  正在增加粘结磁铁的密度。 另外,在基于Nd-Fe-B的快速凝固的磁体中,稀土元素的含量为约6at%以上时,通常使用熔融纺丝法,将其材料合金的熔融液喷射到冷却辊上。 在现有技术中,可以快速提高材料的冷却和凝固速度。 \n\n [0011] 对于Nd-Fe-B基快速凝固磁体,R。Coehoorn等人在J. de Phys,C8,1998,pp。669-670中提出了另一种磁体材料。  Coehoorn材料的成分包括相对较低摩尔分数(即Nd左右)的稀土元素 3.8 铁 77.2 乙 19 ,其中下标以原子百分比表示)和Fe 3 B型化合物为主要相。 该永磁体材料是通过加热和结晶已经通过熔融淬火工艺制备的非晶态合金而获得的。 另外,结晶材料具有亚稳态结构,其中软磁性Fe 3 B相和硬磁Nd 2 铁 14 B相共存,并且其中非常小的尺寸(通常为几纳米量级)的晶粒作为这两个结晶相的复合物精细而均匀地分布。 因此,将由这种材料制成的磁体称为“纳米复合磁体”。 据报道,这种纳米复合磁体的剩磁为B。 r  高达约1 T或更高。 但是矫顽力H J 其相对较低,即约160kA / m至约240kA / m。 因此,仅当磁体的工作点为大约1以上时,该永磁体材料才适用。 \n\n [0012] 已经提出将各种金属元素添加到纳米复合磁体的材料合金中以改善其磁性。 参见,例如,日本特开平3-261104号美国专利No. 美国专利号4,836,868,日本专利公开号7-122412,PCT国际公开号WO 003/03403和W.C.Chan等人。 等人,“难熔金属对α-Fe/ R磁性的影响 2 铁 14 B型纳米复合材料”,IEEE Trans。 真是的 第5号,INTERMAG。  99,Kyongiu,韩国,第3265至3267页,1999年。但是,这些提议的技术都没有足够可靠的技术来始终获得足够的“单位成本特征值”。 更具体地说,通过这些技术生产的纳米复合磁体中没有一个具有足够高的矫顽力以实际在各种应用中使用。 因此,这些磁体都不能表现出商业上可行的磁性。 \n\n 发明内容 \n\n [0013] 为了克服上述问题,本发明的优选实施方式提供了一种以低成本生产具有优异磁性能的铁基合金永磁体的方法,并且还提供了一种具有矫顽力H的永磁体。 J 足够高,可以在各种应用中实际使用磁铁(例如,H  J ≥550 kA / m),同时保持剩磁B r  约为0.80 T或更高。 \n\n [0014] 根据本发明优选实施方式的铁基稀土合金纳米复合磁体具有由通式(Fe 1-m Ť m )  100 x yz 问 x [R y 钛 z 其中,T是选自由Co和Ni组成的组中的至少一种元素,Q是选自由B和C组成的组中的至少一种元素,并且R是基本上不包含La或Ce的至少一种稀土元素。 摩尔分数x,y,z和m优选满足以下不等式:10 at% 2 Ť 14 具有R的晶粒之间的晶界中存在的平均晶粒尺寸为约20 nm至约200 nm和强磁性铁基硼化物的Q型化合物 2 Ť 14 Q型化合物。 铁磁性铁基硼化物优选分散在晶界中或以膜的形式存在于晶界上以覆盖R的晶粒的表面 2 Ť 14 Q型化合物至少部分地。 \n\n [0015] 在本发明的一个优选实施方案中,摩尔分数x,y和z满足以下不等式:10at% [0016] 在本发明的另一个优选实施方案中,磁体包括结晶相,包括R。 2 Ť 14 Q型化合物和铁磁性铁基硼化物的总量为约95体积%以上,非晶相为约5体积%以下。 \n\n [0017] 更特别地,磁体优选地包括R 2 Ť 14 Q型化合物的含量为约65体积%至约85体积%。 \n\n [0018] 在本发明的又一优选实施方式中,R的晶粒 2 Ť 14 Q型化合物具有约2at%或更低的Ti浓度,而R的晶粒之间的晶界中的Ti浓度 2 Ť 14 Q型化合物高于R晶粒内部的Ti浓度 2 Ť 14 Q型化合物。 \n\n [0019] 具体而言,R的晶粒之间的晶界中的Ti浓度 2 Ť 14 Q型化合物优选为约7at%或更高。 \n\n [0020] 在本发明的另一个优选实施方案中,铁磁性铁基硼化物的平均尺寸沿晶粒边界的厚度测量为约50nm或更小。 \n\n [0021] 在本发明的又一优选实施方式中,铁磁性铁基硼化物以在R的晶粒之间的晶界上的平均厚度为约20nm或更小的膜的形式存在。 2 Ť 14 Q型化合物。 \n\n [0022] 在本发明的另一个优选实施方式中,铁磁性铁基硼化物分散在R的晶粒之间的晶界中。 2 Ť 14 Q型化合物,并且具有约1nm至约50nm的平均长轴长度。 \n\n [0023] 在本发明的另一个优选实施方式中,在磁体的任意截面上,R的晶粒 2 Ť 14 Q型化合物的平均尺寸大于铁磁性铁基硼化物的平均尺寸。 \n\n [0024] 在本发明的又一个优选实施方案中,摩尔分数x和z满足不等式10at%。 [0025] 在本发明的另一个优选实施方案中,铁基硼化物包括Fe。 3 硼和/或铁 23 乙 6 。 \n\n [0026] 在本发明的又一优选实施例中,磁体为薄条状,其厚度为约10μm至约300μm。 \n\n [0027] 在本发明的另一个优选实施方案中,将磁铁粉碎成粉末颗粒。 在该特别优选的实施方案中,粉末颗粒优选具有约30μm至约250μm的平均粒径。 \n\n [0028] 在本发明的又一优选实施例中,磁体具有剩磁B表示的硬磁性能。 r  大约0.80 T或更高,最大能量积(BH)  最高 约100 kJ / m 3  或更高,矫顽力H J 约为480 kA / m或更高。 \n\n [0029] 更具体地,磁体优选具有由剩磁B表示的硬磁性能。 r  约0.85 T或更高,并且最大能量积(BH)  最高 约120 kJ / m 3  或者更多。 \n\n [0030] 通过将包括根据上述本发明的任何一个优选实施方式的铁基稀土合金磁体的粉末的磁体粉末与树脂粘合剂一起成型来获得根据本发明的一个优选实施方式的粘结磁体。  。 \n\n [0031] 通过以下参考附图对本发明的优选实施例的详细描述,本发明的其他特征,要素,步骤,特征和优点将变得更加明显。 \n\n 附图说明 \n\n [0032] 无花果 图1A和1B示意性地示出了根据本发明的优选实施方式的铁基稀土合金纳米复合磁体的结构。 \n\n [0033] 图。 图2A是示出根据本发明的优选实施方式的用于制造用于铁基稀土合金磁体的快速凝固的合金的熔融淬火机的整体布置的剖视图; 和 \n\n [0034] 图。 图2B示出了图1A所示的机器的一部分。 在图2A中,将熔体骤冷并快速固化至更大的规模。 \n\n [0035] 图。 图3是表示本发明的优选实施方式的一个例子的样品的退磁曲线的图。 \n\n [0036] 图。 图4是示出已经退火的样品的X射线衍射图的图。 \n\n [0037] 图。 图5是通过用透射电子显微镜观察退火样品的微金属结构以约125,000的倍数拍摄的本发明的优选实施方式的示例的照片。 \n\n [0038] 图。 图6是示出通过用原子探针场离子显微镜(APFIM)观察针状样品的金属结构而拍摄的本发明的优选实施方式的示例的FIM图像的照片。 \n\n [0039] 图。 图7是示出在2号样品的深度方向上测量的Nd,B和Ti的累积浓度分布的图。 \n\n [0040] 图。 图8A是示出图7所示的区域1至12中的Ti浓度和Nd浓度之间的关系的图。  7; 和 \n\n [0041] 图。 图8B是示出图7所示的区域1至区域12中的Ti浓度与B浓度之间的关系的图。  7。 \n\n 具体实施方式 \n\n [0042] 根据本发明优选实施方式的铁基稀土合金磁体是通过快速冷却并固化包括Ti的稀土-铁-硼基材料合金的熔体而形成的纳米复合磁体。 这种快速凝固的合金包括纳米晶相。 如果需要,将快速凝固的合金加热并进一步结晶。 \n\n [0043] 一般而言,如果将稀土元素R的摩尔分数设定为低于约10at%,则R 2 铁 14 有助于硬磁性能的B相会降低其体积百分比。 此外,α-Fe相比R形核早 2 铁 14 B相,并且容易过度增加其晶粒尺寸。 由于α-Fe相具有高的磁化强度,因此最终磁体的磁化强度总体上增加。 但是,由于磁铁的α-Fe相过大,因此其消磁曲线的环矩形性变差,矫顽力也降低。 在现有技术中,试图通过添加一些金属元素来减小每个结晶相(包括容易具有过大尺寸的α-Fe相)的尺寸来增加矫顽力。 但是,所得矫顽力仍然不足。 \n\n [0044] 本发明人通过实验发现并证实,如果将适量的Ti添加到包括小于约10原子%的稀土元素R和约10原子%至约17原子%的B的材料合金中,则晶粒 R的 2 Ť 14 与冷却和凝固的熔融合金中的Fe相相比,Q型化合物和铁基硼化物可以更快地成核,并且可以防止α-Fe的成核。 本发明人还发现,通过以这种方式比软磁性相更快地且更早地使硬磁性相成核并生长,可以在R之间的晶界中产生具有铁磁性的铁基硼化物的核。 2 Ť 14 Q晶体。 因此,如果在材料合金的结晶过程中生长铁磁性铁基硼化物以覆盖R的表面 2 Ť 14 Q晶粒在不增加界面能的情况下,由多核生长的铁基硼化物暂时分散,但很快会在R的表面部分结合在一起 2 Ť 14 Q晶粒。 结果,铁基硼化物最终将形成某种膜或层。 这样,R的表面 2 Ť 14 Q晶粒至少部分地被铁基硼化物的膜覆盖。 \n\n [0045] 本发明的优选实施方案提供了一种纳米复合结构,其中R 2 Ť 14 用作硬磁相的Q晶粒通过用作软磁相的铁基硼化物薄膜(平均厚度约为20 nm或更小)和/或其细颗粒(具有 长轴尺寸约为1纳米至50纳米)。 也就是说,沿着R的晶界 2 Ť 14 Q晶粒,软磁性相和硬磁性相通过交换相互作用而磁耦合在一起。 硬磁性相和软磁性相之间的交换耦合主要在它们的界面中产生。 由于软磁性相以覆盖硬磁性相的膜的形式存在,所以大部分软磁性相的磁矩都受到磁约束,因此可获得优异的磁性能。 结果,形成了可以用作交换弹簧磁体的结构。 本发明人还发现,该磁耦合已经被存在于晶界中的弱磁相或非磁相所削弱。 \n\n [0046] 无花果 图1A和1B示意性地示出了根据本发明优选实施方式的纳米复合磁体的结构。 具体而言, 图1A是示意性地示出R的截面图。 2 铁 14 该优选实施方式的磁体中的B和晶界相。 如图1所示。 如图1A所示,在晶界相中存在铁基硼化物(Fe-B)。 图。 图1B是示出R的立体图。 2 铁 14 B相与铁基硼化物。 如图1所示。 如图1B所示,铁基硼化物在晶界中被精细地分散和/或像膜或层结合在一起,从而部分覆盖了R的表面 2 铁 14 B相。 换句话说,存在于R的晶界中的铁基硼化物 2 铁 14 B相部分连续地布置,部分不连续地布置。 \n\n [0047] 以这种方式,根据本发明的优选实施方案,在R之间的晶界或亚界中生长具有铁磁性的铁基硼化物。 2 Ť 14 Q晶粒覆盖R的表面 2 Ť 14 Q晶粒至少部分地。 结果,形成了独特的纳米复合磁体结构,其中细(或薄)铁基硼化物存在于R之间的晶界或子界中 2 Ť 14 可以获得Q晶粒。 在此使用的术语“晶粒边界”不仅严格地指“晶粒边界”,而且还指任何“子边界”。 \n\n [0048] 本发明人进行的实验结果表明,特别是当具有铁磁性的铁基硼化物在R的表面上形成薄膜时。 2 Ť 14 在其晶界中的Q晶粒,获得具有优异磁性能的纳米复合磁体。 在本发明的优选实施方式中,软磁相薄地存在于晶界中,优选占整个磁体的约10vol%至约40vol%。 \n\n [0049] 这样的结构是通过成核并生长R来实现的 2 Ť 14 通过添加Ti,然后通过在R之间的间隙(或晶界)中沉淀铁基硼化物,使Q晶粒比其他软磁相的晶粒更快,更早。 2 Ť 14 Q晶粒。 也就是说,直到R 2 Ť 14 Q晶粒已经充分成核并生长,从而允许软磁相在其晶界中生长。 因此,R限制了晶界部分中的软磁相的晶粒生长。 2 Ť 14 Q晶粒。 以这种方式形成的软磁相的晶格与硬磁相的晶格不匹配。 这种纳米复合磁铁的结构不同于铁的结构 3 黑白 2 铁 14 在这方面B型纳米复合磁体也是如此。 具体来说,在铁中 3 黑白 2 铁 14 B型纳米复合磁体,包括约2 at%至约6 at%的稀土元素R和约15 at%至约20 at%的硼(B),软磁性Fe 3 B相和硬磁R 2 铁 14 B相通过相变过程形成。 也就是说,软磁铁 3 B相在硬磁R之前析出 2 铁 14 B相成核。 在这种情况下,软磁性相不能以膜状存在。 因此,铁的晶格 3 观察到B与R部分匹配 2 铁 14 B. \n\n [0050] 在本发明的优选实施方式中,作为R 2 Ť 14 Q晶粒成核并生长,已基本均匀分布在熔融合金中的Ti进入R的晶界并凝结在其中 2 Ť 14 Q晶粒。 本发明人认为原因是Ti不能以化学稳定状态存在于R内部。 2 Ť 14 Q晶粒。 根据本发明人收集的实验数据,在晶界相中冷凝的Ti以约5at%至约30at%的浓度存在于晶界中。 但是,不清楚晶界相中Ti以何种形式存在。 \n\n [0051] 在下文中,将进一步详细描述根据本发明优选实施方式的铁基稀土合金磁体。 \n\n [0052] 在本发明的各种优选实施方式中,铁基稀土合金磁体优选具有由以下通式表示的组成: 1-m Ť m )  100 x yz 问 x [R y 钛 z 。 在该式中,T优选为选自由Co和Ni组成的组中的至少一种元素,Q优选为选自由B和C组成的组中的至少一种元素,并且R优选为至少包括以下元素的稀土元素: 没有La或Ce。 摩尔分数x,y,z和m优选满足不等式10 at% 2 Ť 14 Q型化合物和铁磁性铁基硼化物通过交换相互作用而磁耦合在一起。 优选地,铁磁性铁基硼化物已经生长以在R之间的晶界中形成膜。 2 Ť 14 Q晶粒并覆盖R的表面 2 Ť 14 Q晶粒整体。 \n\n [0053] 根据本发明该优选实施方案的铁基稀土合金磁体优选包含小于约10at%的稀土元素。 但是,具有铁磁性的铁基硼化物在主相的晶界中析出。 因此,磁体可以表现出可比(甚至增加)的磁化强度(或剩磁B)。 r ),并且与不含Ti的磁铁相比,退磁曲线的环路矩形度更高。 \n\n [0054] 在根据本发明的本优选实施方式的铁基稀土合金磁体中,其具有铁磁性能的主相的晶粒被作为软磁相的铁基硼化物稀薄地覆盖。 因此,这两个主相的晶粒通过交换相互作用而磁耦合在一起。 因此,合金整体上在其退磁曲线中可表现出优异的回圈矩形度。 \n\n [0055] 根据本发明的该优选实施方式的铁基稀土合金磁体优选包括具有约等于或什至高于R的饱和磁化强度的铁基硼化物和α-Fe。 2 Ť 14 Q(通常为Nd 2 铁 14 B)阶段。 铁基硼化物的实例包括Fe 3 B(饱和磁化强度约为1.5 T)和Fe 23 乙 6  (饱和磁化强度约为1.6 T)。 在这种情况下,钕 2 铁 14 B相的饱和磁化强度约为1.6 T,α-Fe相的饱和磁化强度约为2.1T。 \n\n [0056] 通常,当B的摩尔分数x大于约10原子%且稀土元素R的摩尔分数y为约6原子%至约8原子%时,R 2 铁 23 乙 3  除非添加Ti,否则会产生杂质。 但是,即使使用具有这种组成的合金材料,添加Ti也会产生R 2 铁 14 硼铁 23 乙 6  和铁 3 B,不是R 2 铁 23 乙 3 在本发明的优选实施例中。 这些铁基硼化物有助于增加磁化强度。 应该指出的是,“铁 3 B”在此包括Fe 35 B,很难与铁区分开 3 B. \n\n [0057] 在本发明的各种优选实施方式中,快速凝固的合金具有几乎没有沉淀出具有过大晶粒尺寸的α-Fe相的结构,或者具有 2 Ť 14 取而代之的是存在具有非常小的晶粒尺寸的Q型相或R 2 Ť 14 晶粒尺寸非常小的Q型相与非晶相共存。 如本文所用,术语“非晶相”不仅是指其中原子排列充分无序的相,而且还包括包括用于结晶的胚,极小的晶体区域(尺寸:几纳米或更小)和/或原子的相。 集群。 更具体地,术语“非晶相”是指具有不能通过X射线衍射分析或TEM观察定义的晶体结构的任何相。 换句话说,具有通过X射线衍射分析或TEM观察可清楚识别的晶体结构的任何相在本文中将被称为“结晶相”。 \n\n [0058] 在现有技术中,如果具有与本发明的优选实施方案的组成相似的组成的熔融合金(即,包括除了Ti以外的本发明的组成中包括的所有元素的组成),则所得合金将具有 α-Fe相大量生长的组织。 因此,当合金在冷却后被加热并结晶时,α-Fe相将过度增加其晶粒尺寸。 一旦软磁相(包括α-Fe相)生长过多,合金的磁性能就会大大降低,因此实际上不可能从这种合金生产出优质的永磁体。 \n\n [0059] 仅当将Ti添加到材料合金中时,硬磁相才会成核并比任何其他相更快地生长,并且比任何其他相更早地生长,然后具有铁磁特性的铁基硼化物将沉淀在主相晶粒之间的晶界中。 此后,沉淀的铁基硼化物将很快部分结合在一起,形成连续的膜。 结果,形成其中主相的晶粒表面被该膜薄覆盖的结构。 \n\n [0060] 如果添加除Ti之外的任何其他金属元素(例如,Nb,V,Cr等),则α-Fe相的晶粒生长在α-Fe相的相对较高的温度范围内显着地进行。  α-Fe相和硬磁性相之间的交换耦合不能有效地限制α-Fe相的磁化方向。 结果,退磁曲线将大大降低环路矩形度。 应该注意的是,即使添加Nb,Mo或W代替Ti,也可以通过在相对较低的温度范围内对合金进行热退火来获得良好的硬磁性能,包括优异的去磁曲线的环路矩形度,而α-Fe 相沉淀。 但是,在如此低温下退火的合金中,R 2 铁 14 B结晶颗粒会分散在非磁性非晶相中,并且合金的剩磁不大 r 。 同样,如果合金在更高的温度下退火,则α-Fe相会形核并从非晶相中生长出来。 与添加Ti的情况不同,成核后,α-Fe相迅速生长并过度增大其晶粒尺寸。 结果,α-Fe相的磁化方向不再被α-Fe和硬磁相之间的交换耦合有效地约束,并且退磁曲线的环路矩形度显着恶化。 \n\n [0061] 另一方面,在添加V或Cr而不是Ti的情况下,这些添加金属元素的磁矩与Fe的磁矩反铁磁耦合以形成固溶体,从而显着降低了磁化强度。 \n\n [0062] 相反,在向材料合金中添加Ti的情况下,α-Fe相的结晶动力学变慢,即,α-Fe相成核并生长需要更长的时间。 因此,本发明人认为Nd 2 铁 14 B相开始成核并在α-Fe相粗大生长之前生长。 因此,如果添加Ti,则Nd的晶粒 2 铁 14 在α-Fe相生长过多之前,B相可以充分生长并均匀分布。 \n\n [0063] 因此,仅当添加Ti时,α-Fe相的晶粒粗大化就如所希望的那样最小,因此,可以获得具有铁磁特性的铁基硼化物。 此外,Ti,B和C作为延缓Fe初始晶体(即将转变为α-Fe的γ-Fe)结晶从而促进过冷液体生成的元素起着重要作用。 在熔体淬火过程中。 因此,即使包括Ti的材料合金的熔体以约10的相对较低的冷却速率快速冷却并固化。 2 °C /秒至约10 5 °C / sec,一种快速凝固的合金,其中具有过大晶粒尺寸的α-Fe相尚未析出,但包含纳米晶R 2 铁 14 可获得约60vol%或更高的B相(有时也包括铁基硼化物)。 \n\n 首选组成 \n\n [0064] Q可以是仅B(硼)或B和C(碳)的组合。  C与Q之比优选为约0.25或更小。 \n\n [0065] 如果Q的摩尔分数x为约10at%或更小,则难以制备期望的快速凝固的合金,其中纳米晶体R 2 铁 14 在大约10的低冷却速率下B和非晶相共存 2 °C /秒至约10 4 °C /秒 而且,即使此后对快速凝固的合金进行退火,所得的H J 合金的金属含量小于约400kA / m。 另外,在这种情况下,不能采用作为各种快速冷却方法中最具成本效益的技术之一的带钢铸造工艺,并且所产生的永磁体产品的价格无意中增加了。 另一方面,如果Q的摩尔分数x超过约17 at%,则铁基硼化物将几乎与R一起成核。 2 铁 14 B期,并且最终会过度增长。 结果,所需的纳米复合结构,其中铁基硼化物相均匀地分布或以薄膜形式存在于R的晶界上 2 铁 14 无法获得B相,并且所得到的磁性能劣化。 \n\n [0066] 考虑到这些考虑,Q的摩尔分数x优选大于约10原子%且等于或小于约17原子%。  x的更优选上限为约16at%,x的更优选上限为约15at%。 \n\n [0067] C与Q的(原子)比p优选为约0至约0.25。 为了获得添加剂C所期望的效果,C比p优选等于或大于约0.01。 原因如下。 如果p远小于约0.01,则即使添加C也几乎无法获得预期的效果。 另一方面,如果p远大于约0.25,则产生的α-Fe相的体积百分比增加太多,从而导致所得磁性能的劣化。 比率p的下限优选为约0.02,而其上限优选为约0.20。 比p更优选为约0.02至约0.17。 \n\n [0068] R是选自稀土元素(包括钇)中的至少一种元素。 优选地,R基本不包括La或Ce。 这是因为如果包含La或Ce,则R中包含R(通常为Nd) 2 铁 14 B相被La或Ce取代,从而降低了矫顽力并降低了退磁曲线的环路矩形度。 但是,如果存在极少量(即约0.5at%或更少)的La或Ce作为不可避免地包含的杂质,则磁性能不会受到如此严重的影响。 因此,本文中的“基本上不含La(Ce)”或“基本上不含La(Ce)”是指La(Ce)的含量为约0.5at%以下。 更具体地,R优选包括Pr或Nd作为必不可少的元素,其一部分可以被Dy和/或Tb代替。 如果R的摩尔分数y小于约6原子%,则具有纳米晶体R的细晶粒 2 铁 14 实现矫顽力所需的B结构不能充分结晶,因此所需的高矫顽力H J 不能获得约480kA / m或更大的电流。 另一方面,如果R的摩尔分数y等于或大于约10 at%,则具有铁磁性能和α-Fe相的铁基硼化物的百分比会降低,而富R的非硼化物的百分比则降低。 磁相反而增加。 结果,不能形成预期的纳米复合结构并且磁化强度下降。 由于这些原因,稀土元素R的摩尔分数y优选等于或大于约6原子%但小于约10原子%(例如,约7原子%至约9.5原子%),更优选为 约7.5at%至约9.3at%,甚至更优选约8.0at%至约9.0at%。 尽管在本发明的优选实施方案中,稀土元素R的摩尔分数y低,但是添加剂Ti使R成为可能。 2 铁 14 B相比其他任何相更早地成核并生长。 因此,可以有效地使用熔融合金中包含的R来制造R。 2 铁 14 B相和R的浓度在R的晶界部分将较低 2 铁 14 B相。 结果,晶界相中的R浓度变为约0.5at%或更低,这比硬磁相中的约11at%的R浓度低得多。 以这种方式,R可以有效地用于形成硬磁相(例如,R 2 铁 14 B相)。 因此,即使R的摩尔分数y小于约10 at%,并且硬磁相(例如R 2 铁 14 B相占全部合金的约65at%至约85at%,即硬磁相仍可以通过交换相互作用与存在于晶界中的软磁相磁性耦合。 结果,获得了优异的硬​​磁性能。 应注意的是,每个组成相(例如R)的体积百分比 2 铁 14 B相在此通过穆斯堡尔光谱法测量。 \n\n [0069] 为了获得上述效果,Ti是必不可少的。 添加剂Ti增加矫顽力H  J ,剩磁B r  和最大能量积(BH)  最高 并改善退磁曲线的环路矩形度。 \n\n [0070] 如果Ti的摩尔分数z小于约0.5at%,则不能充分实现添加剂Ti预期的那些效果。 然而,如果Ti的摩尔分数z超过约6原子%,则即使在合金已经被加热和结晶之后,残留在合金中的非磁性相的体积百分比也会增加,并且剩磁B r  可能下降。 此外,如果Ti的摩尔分数z超过约6 at%,则TiB 2  在熔融合金中会产生熔体,因此难以进行预期的熔体淬火过程。 考虑到这些考虑,Ti的摩尔分数z优选为约0.5原子%至约6原子%。 更优选的z范围的下限为约1.0at%,其上限为约5at%。 更优选的z范围的上限为约4at%。 \n\n [0071] 而且,Q的摩尔分数x越高,越可能形成包括过量百分比的Q(例如,硼)的非晶相。 因此,也由于这个原因,优选将Ti的摩尔分数z设置得更高。  Ti对B具有很强的亲和力,并且在膜状晶界相中冷凝。 但是,如果Ti的摩尔分数z与B的摩尔分数x的比率太高,则Fe中将不存在Ti。 3 B晶界相不再存在,但将并入R中 2 铁 14 B化合物,因此可能降低磁化强度。 但是,如果z / x比率太低,则会大量产生富含B的非磁性非晶相。 本发明人通过实验发现并证实,优选将摩尔分数x和z控制为满足0.05≤z/x≤0.4的不等式,更优选满足0.1≤z/x≤0.35的不等式,甚至更优选满足 满足不等式0.13≤z/x-≤0.3。 \n\n [0072] 除了元素B,C,R和Ti之外,材料合金的其余部分可以单独是Fe。 可替代地,可以选择选自Co和Ni的至少一种过渡金属元素T来代替Fe的一部分,因为在这种情况下也可以实现期望的硬磁性能。 但是,如果铁中至少有50%的铁被T取代,则剩余的B r  不能获得约0.7T或更大的T。 因此,Fe的置换比例优选为约0%〜约50%。 同样,通过用Co代替一部分Fe,去磁曲线的环路矩形度得到改善,R的居里温度 2 铁 14 B相增加,因此增加了合金的热阻。 可被Co替代的Fe的百分比优选为约0.5%至约40%。 \n\n [0073] 为了获得各种期望的优点和效果,可以以约0原子%至约10原子%的摩尔分数添加金属元素M。  M是选自Al,Si,V,Cr,Mn,Cu,Zn,Ga,Zr,Nb,Mo,Hf,Ta,W,Pt,Pb,Au和Ag的至少一种元素。 \n\n [0074] 在下文中,将参考附图描述本发明的特定优选实施例。 \n\n 熔体淬火机 \n\n [0075] 在该优选实施例中,使用诸如图1和2所示的熔融淬火机制备材料合金。  2A和2B。 合金制备过程在惰性气氛中进行,以防止包含易于氧化的稀土元素R和Fe的原料合金被氧化。 惰性气体可以是例如氦或氩的稀有气体或氮气。 氦或氩的稀有气体比氮气更可取,因为氮气会相对容易地与稀土元素R反应。 \n\n [0076] 图1中所示的机器包括: 图2A包括材料合金熔化室 1  和材料合金淬火室 2 ,其中在可调压力下形成真空或惰性气氛。 具体而言, 图2A示出了机器的整体布置,而图2B示出了机器的总体布置。 图2B以更大的比例示出了机器的一部分。 \n\n [0077] 如图1所示。  2A,熔化室 1  包括一个熔化的坩埚 3 ,一个熔池 4  带吸嘴 5  在底部和一个密封的混合材料进料器 8 。 材料合金 20 已准备好具有所需的磁铁合金成分并由进料器提供 8 在熔化的坩埚中熔化 3  在高温下。 融化 21  材料合金的 20  倒入水库 4 ,其设有用于保持熔体温度的加热器(未显示) 21  从那里以预定水平装满。 \n\n [0078] 淬火室 2  包括旋转的冷却辊 7  用于快速冷却和固化熔体 21  通过浇注喷嘴注入的 5 。 \n\n [0079] 在这台机器中,熔化和淬火室内的气氛和压力 1  和 2  被控制在规定范围内。 为此,大气进气口 1 b , 2 b  和 8 b  和出口 1 a , 2 a  和 8 a  在机器的适当位置提供。 特别是出气口 2 a  连接到泵以控制淬火室内的绝对压力 2  在约30kPa至约大气压的范围内。 \n\n [0080] 熔化的坩埚 3  可以倾斜到所需的角度以倒入熔体 21  通过一个漏斗 6  进入水库 4 。 融化 21  在水库里 4  由加热器(未示出)加热。 \n\n [0081] 吸嘴 5  水库的 4  位于熔化室和淬火室之间的边界壁上 1  和 2  倒入熔体 21  从水库 4  到冷却辊的表面 7 ,位于喷嘴下方 5 。 喷嘴孔口直径 5  例如,可以为约0.5mm至约2.0mm。 如果熔体的粘度 21  高,然后融化 21  不能流过喷嘴 5  容易。 然而,在该优选实施例中,淬火室内的压力 2  保持低于熔化室内的压力 1 。 因此,在熔化室和淬火室之间存在适当的压力差。 1  和 2 和融化 21  可以顺利地装满。 \n\n [0082] 为了获得良好的导热性,冷却辊 7  可以由铝合金,铜合金,碳钢,黄铜,钨,钼或青铜或其他合适的材料制成。 但是,压路机 7  铜优选由Cu制成,因为Cu以合理的成本实现了足够的机械强度。 滚筒直径 7  例如,可以为约300mm至约500mm。 滚筒内部装有水冷却器的水冷却能力 7  根据凝固潜热和每单位时间吸积的熔体体积计算和控制温度。 \n\n [0083] 图1至图3中所示的机器。 例如,图2A和2B所示的合金可在约10至约20分钟内快速固化约10kg的材料合金。 以这种方式获得的快速凝固的合金为薄条(或合金带)的形式 22  具有约10μm至约300μm的厚度和约2mm至约3mm的宽度。 \n\n 熔体淬火工艺 \n\n [0084] 一,融化 21  制备由上述通式表示的材料合金,并将其储存在储罐中 4  熔化室的 1  如图所示。  2A。 接下来,融化 21  通过浇注喷嘴注入 5  放在水冷的冷却辊上 7  与辊接触并迅速冷却并固化 7  在减压的Ar气氛中。 在这种情况下,需要采用适当的快速凝固技术来精确控制冷却速度。 \n\n [0085] 在该优选实施例中,通过使R成核,所得磁体可以容易地具有其期望的微观结构。 2 Ť 14 Q型相是在熔融合金冷却时非常经常产生晶核的高温范围内的硬磁相。 因此,R 2 Ť 14 在铸态(即,尚未退火)的快速凝固合金中,可以包含约60体积%以上的Q型相。 为了获得这种结构,熔融合金优选以约1×10的速率淬火。 2 °C /秒至约1×10 8 ℃/秒,更优选约1×10 2 °C /秒至约1×10 6 °C /秒 \n\n [0086] 熔融合金的时间间隔 21  被冷却辊淬火 7  等于从熔融合金开始算起的时间 21  到达旋转冷却辊的圆周 7  以及何时淬火合金 22  离开滚筒 7 。 同时,合金的温度降低,变成过冷液体。 之后,过冷合金离开辊子 7  并在惰性气氛中旅行。 当薄带合金移动时,合金的热量散发到大气中。 结果,合金的温度进一步下降。 根据本发明的优选实施例的这个例子,将大气压的压力控制在大约30kPa到大约大气压的范围内。 因此,合金的热量可以更有效地散发到大气中,并且R 2 Ť 14  Q型相,例如Nd 2 铁 14 B相可以在合金中成核并细小且均匀地生长。 应当指出的是,除非已经向材料合金中添加了适量的Ti,否则在快速凝固的合金中α-Fe相会成核并更快地生长,从而使所得的磁体性能劣化。 \n\n [0087] 在该优选实施例中,辊的表面速度 7  将温度调节到约10m / sec至约30m / sec的范围,并且大气压力优选等于或大于约30kPa,以增加由大气引起的二次冷却效果。 以这种方式,快速凝固的合金,包括约60vol%或更多的R 2 Ť 14 制备平均晶粒尺寸小至约50nm或更小的Q型相。 \n\n [0088] 根据本发明的各种优选实施方式,快速冷却熔体的技术不限于上述的单辊熔体纺丝方法。 其他适用技术的实例包括双辊法,气体雾化法,不需要使用喷嘴或孔口来控制流量的带钢铸造法,以及结合使用辊和雾化法的快速冷却技术。 \n\n [0089] 在这些快速冷却技术中,带钢铸造方法导致较低的冷却速度,约为10 2 °C /秒至约10 5 °C /秒 根据该优选实施方式,通过向原料合金中添加适当量的Ti,即使通过带铸法也可以得到快速凝固的合金,其中大部分具有不具有Fe初晶的结构。 条带铸造方法的工艺成本可以是任何其他快速冷却方法的一半或更少。 因此,当制备大量快速凝固的合金时,带材铸造法比单辊法有效得多,并且适用于批量生产。 但是,如果不向材料合金中添加Ti,或者向其中添加Mn,Mo,Ta和/或W来代替Ti,则即使在快速凝固的情况下,也将产生包含大量Fe初始晶体的金属结构。 通过带钢铸造法制备的合金。 因此,无法获得所需的微观结构。 \n\n 热处理 \n\n [0090] 在该优选实施例中,热处理(退火)在氩气气氛中进行。 优选地,以约5℃/秒至约20℃/秒的升温速率加热合金,并在约550℃至约850℃的温度下保持一段时间。 约30秒至约20分钟,然后冷却至室温左右。 该热处理导致在剩余的非晶相中亚稳相的成核和/或晶体生长,从而形成纳米复合纳米晶结构。 根据本发明的优选实施方式,纳米晶体R 2 铁 14 B相(例如Nd 2 铁 14 B相)已经占铸态快速凝固合金的约60体积%或更多,尚待退火。 因此,当在上述条件下进行热处理时,除纳米晶Nd以外的软磁相 2 铁 14 B相(例如α-Fe相和其他结晶相)不会太大地增加其尺寸,并且会在纳米晶Nd之间的晶界中精细而均匀地分布 2 铁 14 B粒。 热处理结束后,纳米晶R 2 铁 14 B(例如Nd 2 铁 14 B)相将占退火合金的约65vol%至约85vol%。 \n\n [0091] 如果热处理温度低于约550℃,则即使在热处理之后,仍可能残留许多非晶相,并且取决于快速冷却过程的条件,所得矫顽力可能未达到期望水平。 另一方面,如果热处理温度超过约850℃,则各构成相的晶粒生长过快,从而剩磁B降低。 r  并使退磁曲线的环路矩形度恶化。 由于这些原因,热处理温度优选为约550℃至约850℃,更优选为约570℃至约820℃。 \n\n [0092] 在本发明的该优选实施方式中,足够量的Nd 2 铁 14 B相在快速凝固的合金中均匀且细微地结晶。 因此,即使快速凝固的合金不被退火,凝固的合金本身也可以表现出足够好的磁体性能。 也就是说,用于结晶的热处理对于本发明不是必不可少的。 然而,为了进一步改善磁体性能,优选进行热处理。 另外,即使在比常规方法更低的温度下进行热处理,仍可以充分改善磁体性能。 \n\n [0093] 为了防止合金被氧化,优选在惰性气体(例如,Ar或N)中进行热处理。 2  气体)的压力约为50 kPa或更低。 或者,也可以在约1.0kPa以下的真空中进行热处理。 \n\n [0094] 在热处理之前,快速凝固的合金可能包含亚稳相,例如铁 3 硼铁 23 乙 6  和R 2 铁 23 乙 3  R以外的阶段 2 铁 14 B相和非晶相。 在这种情况下,热处理完成后,R 2 铁 23 乙 3  相将消失。 取而代之的是铁基硼化物(例如Fe 23 乙 6 ),其饱和磁化强度大约等于或什至高于R 2 铁 14 可以生长B相或α-Fe相。 \n\n [0095] 经过该热处理的所得磁体合金包含R 2 Ť 14 Q型相位(例如,R 2 铁 14 B相)在约65体积%至约85体积%。 更具体地,如果R的摩尔分数y为约9at%,则R 2 Ť 14 Q型相占整个合金的约75体积%。 但是如果R的摩尔分数y降至约8 at%,则R 2 Ť 14 Q型相占整个合金的约68体积%。 另一方面,磁体还包括约10vol%至约35vol%的软磁相。 \n\n [0096] 此外,结晶相,包括R 2 Ť 14 Q型化合物和铁磁性铁基硼化物的总量约占95体积%以上,而非晶态相占整个合金的约5体积%以下。 \n\n [0097] 在本发明的优选实施方式中,即使软磁性相如铁基硼化物保留在所得的退火合金中,那些软磁性相也以覆盖硬磁性相的薄膜的形式存在。 因此,由于软磁性相和硬磁性相通过交换相互作用而磁耦合在一起,因此仍可获得优异的磁性能。 \n\n [0098] 根据本发明的优选实施方式,晶界相主要由铁基硼化物(例如Fe 3 B)具有铁磁特性,并且还包括具有铁磁特性的α-Fe相和其他附加相。 更具体地,铁基硼化物占晶界相的约70体积%以上。 但是,在晶界相中几乎不存在诸如Nd的稀土元素R。 相反,稀土元素R有效地用于产生硬磁相。 除非将适量的Ti加入到具有小于约10at%的R摩尔分数y和大于约10at%的Q摩尔分数x的组合物中,否则不能获得这样的纳米晶结构。 换句话说,如果添加任何其他金属元素代替Ti,则得到的晶界相(如果有)将是具有低磁化强度的非晶相。 因此,将难以由这种合金制造具有良好性能的纳米复合磁体。 另外,即使将Ti添加到Q摩尔分数x为约10at%或更小的材料合金中,也不会在晶界中形成具有高磁化强度的软磁相。 因此,所得磁体不能是通过其复合相的交换耦合表现出优异的磁体性能的纳米复合磁体。 \n\n [0099] 热处理后,R 2 Ť 14 Q型相需要具有约300nm或更小的平均晶粒尺寸,其是单个磁畴尺寸。  R的平均晶粒度 2 Ť 14 Q型相优选为约20nm至约200nm,更优选为约20nm至约100nm。 \n\n [0100] 另一方面,如果铁基硼化物的薄膜的平均厚度大于约50nm,则各组成相之间的交换相互作用减弱,从而使退磁曲线的环矩形性变差并降低(BH  )  最高 。 这就是为什么在晶界的厚度方向上测得的铁基硼化物相的平均尺寸(即膜的平均厚度)优选为约50nm或更小,更优选为约30nm或更小,甚至 更优选约20nm或更小。 \n\n [0101] 应该注意的是,快速凝固的合金薄带在进行热处理之前可以被粗切或粉碎。 热处理后,将得到的磁性合金细粉碎,得到磁铁粉末。 然后,可以通过对该粉末进行已知的处理步骤来由该磁体粉末制造各种类型的粘结磁体。 在制造粘结磁体时,将铁基稀土合金的磁体粉末与环氧树脂或尼龙树脂粘合剂混合,然后模制成所需的形状。 此时,可以将任何其他类型的磁体粉末(例如,Sm-Fe-N型磁体粉末或硬铁氧体磁体粉末)与纳米复合磁体粉末混合。 \n\n [0102] 使用能产生树脂的粘结磁体,可以生产电动机,执行器和其他旋转机械。 \n\n [0103] 当将根据本发明的该优选实施方式的磁体粉末用于注射成型粘结磁体时,优选将所述磁体粉末粉碎成具有约200μm或更小,更优选约30μm至约150的平均粒径。 微米 另一方面,如果将该磁体粉末用于压制的粘结磁体,则优选将该磁体粉末粉碎成平均粒径为约300μm或更小,更优选为约30μm至约250μm,甚至更优选为约3μm。  50μm至约200μm,具有双峰尺寸分布。 \n\n [0104] 应当注意的是,如果对以这种方式获得的磁体粉末进行表面处理(例如,耦合处理,转化涂层或镀覆),则无论粉末如何模制,用于粘结磁体的粉末都可以提高其成型性。  。 另外,所得到的粘结磁体可以具有提高的耐腐蚀性和耐热性。 或者,一旦通过将磁体粉末模制成期望的形状而形成粘结磁体之后,也可以对磁体的表面进行处理,例如用塑料或转化涂层覆盖或镀覆。 这是因为与对磁铁粉末进行表面处理的情况一样,也可以提高粘结磁铁的耐腐蚀性和耐热性。 \n\n 例子 \n\n 例子1 \n\n [0105] 称重纯度约为99.5%以上的材料B,Fe,Ti和Nd,以具有以Nd表示的合金组成。 9 铁 78.7 乙 10.3 钛 2  (下标以原子百分比表示),总重量约为30 g。 然后,将混合物注入石英坩埚中。 \n\n [0106] 石英坩埚的底部有一个直径约为0.8毫米的孔。 因此,将包含这些材料的合金在石英坩埚中熔融,从而成为材料合金的熔体,然后将其倾倒通过孔。 通过感应加热法在氩气氛中以约35kPa的压力使原料合金熔融。 在本发明优选实施方案的该具体实例中,熔体的温度为约1500℃。 \n\n [0107] 用约26.7kPa的氩气对熔体的表面加压,从而将熔体喷射到铜冷却辊的外周上,该铜冷却辊位于孔下方约0.7mm。 辊在内部冷却的同时高速旋转,以使其外周温度保持在室温附近。 因此,已经从孔口倾倒下来的熔体与冷却辊的表面接触以使其热量消散,同时被迫在旋转的冷却辊上快速移动。 熔体通过孔连续排出到辊的表面上。 因此,快速凝固的合金为细长的薄带(或带)的形状,其宽度为约2mm至约3mm,厚度为约20μm至约50μm。 \n\n [0108] 在此示例中采用的(单)辊方法中,冷却速度由辊的圆周速度和每单位时间浇注的熔体的重量决定,该速度取决于孔的直径(或横截面积) 和熔体上的压力。 在本实施例中,进料速度为约0.5kg / min至约1kg / min,辊表面速度为约20m / sec。 \n\n [0109] 通过CuKα特征X射线分析通过​​该快速冷却过程获得的快速凝固的合金结构。 结果,代表Nd的衍射峰 2 铁 14 B相几乎无法识别出光晕图案。 因此,本发明人证实了纳米晶Nd 2 铁 14 B相存在于快速凝固的合金的非晶相中。 \n\n [0110] 接着,将该快速固化的合金在氩气中退火。 具体而言,将快速固化的合金在约660℃下保持约10分钟,然后冷却至室温。 此后,用振动样品磁力计(VSM)测量退火合金的磁性能。 结果示于下表1: \n\n [0111] \n\n    表格1  磁性能  组成 Br H J(BH)  最高   (原子百分比) (T) (kA / m)(千焦/米 3)  钕 9 铁 78.7 乙 10.3 钛 2  0.88 722.57 121.0 \n\n [0112] 图。 图3示出了该样品的退磁曲线。 \n\n [0113] 用CuKα特征X射线分析退火后的合金组织时,晕圈图案消失了,但衍射峰代表了Nd。 2 铁 14 硼铁 23 乙 6  观察到α-Fe相。 图。 图4示出了退火合金的粉末X射线衍射图。 \n\n [0114] 接下来,用透射电子显微镜(TEM)分析退火的微金属结构。 结果,观察到平均粒径为约150nm的晶粒和平均粒径为约20nm的细晶粒。 细晶粒存在于先前晶粒之间的晶界中。 图。 图5是TEM照片,其示出了在约125,000的功率下的退火合金的暗场图像。 \n\n [0115] 接下来,通过TEM-EDX分析通过TEM观察到的晶粒的合金组成。 结果,将平均粒径约为150nm的晶粒鉴定为Nd。 2 铁 14 B.但是,在Nd之间的晶界中存在平均晶粒尺寸为约20nm的细晶粒的相。 2 铁 14 B晶粒,无法识别。 因此,可以看出,铁基硼化物要么以非常小的颗粒的形式分散在晶界中,要么以薄膜(或层)的形式存在。 \n\n [0116] 接下来,将退火的合金机械抛光并加工成棱柱状的棒状样品。 此外,通过电解抛光技术将该棒状样品的末端削尖成针状。 然后,用原子探针场离子显微镜(APFIM)分析该针状样品的金属结构。 结果,本发明人不仅鉴定出Nd, 2 铁 14 B相为主要相,但也为铁基硼化物和极少量的Fe。 本发明人还发现,铁基硼化物中Ti的浓度约为Nd中Ti的浓度的三倍。 2 铁 14 B相。 \n\n [0117] 绘制了通过APFIM分析计数的离子累积数。 当绘制的离子总数达到约12,700时,停止APFIM分析,以获取针状样品末端的FIM图像。 图。 图6显示了此FIM图像。 \n\n [0118] 图2中所示的图像的中心位于中心。 图6对应于探针孔。 所获得的FIM图像显示出明亮的岛状区域分散在黑暗的区域中。 考虑到拍摄该图像的条件,暗矩阵可被视为代表Nd 2 铁 14 B相,而亮岛状区域可被视为代表铁基硼化物相。 也就是说,可以看出,硼化物相精细地分散在退火合金中。 但是,用TEM无法分析非常小的铁基硼化物相的组成。 \n\n [0119] 为了更准确地检测铁基硼化物的三维分布,需要在其深度方向上以相对较短的间隔连续拍摄多个针状样品的FIM图像。 然后,需要对获得的FIM图像进行处理以使其在深度方向上排列。 \n\n [0120] TEM和FIM图像均显示,铁基硼化物相的横截面尺寸约为10 nm。 因此,如果钕基中存在铁基硼化物 2 铁 14 B晶粒,则其相应已通过TEM鉴定。 然而,根据本发明人进行的实验结果,无法确定这些相。 这些结果表明钕基铁中不存在铁基硼化物 2 铁 14 B晶粒,但要么细分散在Nd之间的晶界 2 铁 14 B晶粒或以覆盖Nd的部分连续薄膜的形式存在 2 铁 14 B晶粒。 \n\n [0121] 如果观察到这种多孔膜形状的铁基硼化物为TEM或FIM图像,则观察到铁基硼化物为相互分离的尺寸为约1nm至约20nm的细晶粒。 在钕的任意横截面上 2 铁 14 B晶粒和铁基硼化物。 \n\n [0122] 在本发明的优选实施例中,当熔融合金快速凝固时,R 2 铁 14 B相首先结晶,然后铁基硼化物相结晶。 因此,本发明人认为,铁基硼化物相将从R的表面成核并生长。 2 铁 14 B晶粒,作为不均匀的原子核分散在无定形基体中。 本发明人还认为,已经在R的表面成核的铁基硼化物相。 2 铁 14 B晶粒会以覆盖R表面的方式生长 2 铁 14 B晶粒防止界面能量的增加。 结果,部分铁基硼化物相将结合在一起形成覆盖R的膜 2 铁 14 B晶粒至少部分地。 \n\n [0123] 以这种方式,本发明的优选实施方案提供了一种新颖的纳米复合磁体结构,其中R 2 铁 14 具有硬磁性的B晶粒被具有软磁性的铁基硼化物膜覆盖。 本发明人相信,由于这种独特的结构,该磁体表现出优异的磁性能。 \n\n 例子2 \n\n [0124] 对于下表2中所示的No.1至No.8的每个样品,分别称重纯度为约99.5%或更高的材料B,C,Fe,Ti,V,Cr和Nd,以使每个样品具有总重量。 约30克 然后,将混合物注入石英坩埚中。 在表2中,“ bal”是指余额。 \n\n [0125] \n\n    表2  热  治疗  合金成分 温度 Br H J(BH)  最高   (在 %) (°C) (T) (kA / m)(千焦/米 3 )   E 1钕 8.5 铁  巴尔 乙 12 C 2 钛 4  740 0.80 1018.7 105.5  X 2钕 9 铁  巴尔 乙 11 钛 2  720 0.87 730.2 119.4  A 3钕 8.5 铁  巴尔 乙 11 C 1 钛 2.5  700 0.90 923.2 124.6  M 4钕 8.2 铁  巴尔 乙 12 C 1 钛 3  720 0.87 843.8 113.1  P 5钕 8.8 铁  巴尔 乙 12.4 C 1.6 钛 4 铌 1  720 0.81 1012.4 104.6  C 6钕 9 铁  巴尔 乙 11 铬 2  720 0.72 713.6 87.9  O 7钕 8.1 铁  巴尔 乙 11 C 1 V 7  780 0.63 1003.5 77.4  M 8钕 7.7 铁  巴尔 乙 14 铬 6  770 0.59 1036.8 63.0 \n\n [0126] 石英坩埚的底部有一个直径约为0.8毫米的孔。 因此,将包含这些材料的合金在石英坩埚中熔融以成为合金的熔体,然后将其倾倒通过孔。 通过感应加热法在氩气氛中熔融原料合金。 在该第二具体示例中,将熔体的温度设定为约1400℃。 \n\n [0127] 用约30kPa的Ar气对熔体的表面加压,从而将熔体喷射到位于孔口下方的铜冷却辊的外周上。 在本实施例中,进料速度为约0.4kg / min,辊表面速度为约20m / sec。 以这种方式,获得了具有约1.0mm的宽度和约50μm的厚度的薄带快速凝固合金。 \n\n [0128] 通过粉末XRD分析来分析这种快速凝固的合金结构。 结果,本发明人证实了快速凝固的合金由非晶相组成。 \n\n [0129] 接下来,将快速凝固的合金切成约20 mm的长度,然后在Ar气中退火。 通过将每个样品在表2所示的温度下保持约10分钟来进行该退火处理。 \n\n [0130] 对退火后的合金结构进行粉末XRD分析。 结果,代表Nd的衍射峰 2 铁 14 硼铁 3 硼和铁 23 乙 6  观察到相。 此外,当用透射电子显微镜分析合金的金属结构时,证实了Nd 2 铁 14 硼和铁 3 B相共存于合金中。 具体来说,钕 2 铁 14 B相以晶粒形式存在,平均晶粒尺寸约为50 nm至150 nm,而Fe 3 B相存在于Nd的晶界区域 2 铁 14 B相。 晶界区的厚度为几纳米至约20纳米。 \n\n [0131] 用振动样品磁力计(VSM)测量各个样品的磁性能。 结果也显示在表2中。 \n\n [0132] 接下来,Nd中的Ti浓度 2 铁 14 B相通过APFIM分析测量。 具体地,将退火的快速凝固的合金机械抛光并加工成棱柱状的棒状样品。 此外,通过电解抛光技术将该棒状样品的末端削尖成针状。 然后,用APFIM分析法分析针状样品的金属结构。 \n\n [0133] 图。 图7示出了在2号样品的深度方向上测量的Nd,B和Ti的累积浓度分布。 在图7中,在深度方向上绘制了通过APFIM分析计数的离子的累积数。 具体地,计数的原子数在深度方向上增加的范围对应于原子存在的区域。 另一方面,计数的原子数在深度方向上恒定的范围对应于不存在原子的区域。 \n\n [0134] 图2所示的图。 图7中的电极具有多个节点,在每个节点处代表Nd,B或Ti离子计数的曲线的斜率改变。 在这些节点处将测量Nd,B和Ti浓度的范围划分为1至12号区域,从而计算这些1至12号区域中Nd,B和Ti的浓度。 计算在图2至图4中示出。  8A和8B。 具体而言,图2所示的曲线图的纵轴为纵轴。 图8A表示Ti浓度,其横坐标表示Nd浓度。 另一方面,图3中所示的曲线的纵坐标是0。  8B表示Ti浓度,其横坐标表示B浓度。 \n\n [0135] 从图可以看出, 如图8A所示,在Nd浓度为约8原子%至约14原子%的区域中,Ti浓度为约2原子%以下。 自从钕 2 铁 14 在Nd浓度为约8at%至约14at%的区域中存在B相,可以看出Nd中的Ti浓度 2 铁 14 B相为约2原子%以下。 \n\n [0136] 另一方面,在B浓度为约25原子%至约35原子%的区域中,Ti浓度为约7原子%或更高,如从图2中可见。  8B。 由于铁基硼化物存在于具有约25at%至约35at%的B浓度的区域(即晶界区域)中,因此可以看出,Ti在晶界区域(或晶界)中的浓度 相)约为7 at%或更高。 \n\n [0137] 通过上述方法对各个样品测得的一种或多种添加剂金属M(即Ti,Cr和/或V)的浓度示于下表3中: \n\n [0138] \n\n    表3  M浓度(%) 钕 2 铁 14 乙  晶界相  范例 1 1.7 9.1  2 1.6 8.3  3 1.8 8.5  4 1.9 8.6  5 1.8 8.9  通讯  6 2.7 4.2  7 4.4 5.7  8 3.8 5.4 \n\n [0139] 从表3中可以看出,在本发明的优选实施方式中的每个添加了Ti的具体例子中,Nd的晶粒中Ti的浓度 2 铁 14 B型化合物为约2原子%以下。 另外,Nd之间的晶界中的Ti浓度 2 铁 14 B晶粒大于约8 at%,远高于Nd中的Ti晶粒 2 铁 14 B晶粒本身。 此外,Nd之间的Ti浓度差 2 铁 14 B(右 2 铁 14 B)相和晶界相高达约6at%或更多。 另一方面,在其中添加Cr或V的每个比较例中,Nd中Cr或V的浓度 2 铁 14 B相大于约2at%。 \n\n [0140] Nd中添加剂M(例如Ti)的浓度 2 铁 14 B型化合物超过约2 at%,则Nd的磁化强度 2 铁 14 B晶粒大大减少。 为了避免这种磁化强度降低,Nd中的Ti浓度 2 铁 14 B晶粒优选为约2原子%以下,更优选为约1.8原子%以下。  Nd中的Ti浓度 2 铁 14 B晶粒最优选为约1.65at%或更低,以进一步增加磁化强度。 \n\n [0141] 比较例的晶界区域中的Cr或V的浓度与本发明的优选实施方式的实施例的晶界区域中的Ti的浓度没有太大不同。 但是,由于在比较例中未添加Ti,因此比较例的结构与本发明的优选实施方式的例完全不同。 就是说,期望的结构,其中具有高磁化强度的铁基硼化物精细分散或以膜的形式存在于Nd的细晶界相中 2 铁 14 在任何比较例中都不应形成B晶粒。 原因在于,由于在比较例中未添加Ti,因此Nd的晶粒 2 铁 14 B型化合物的成核速度不能早于α-Fe相。 \n\n [0142] 而且,在其中添加Cr或V而不是Ti的比较例中,在晶界区域中产生的磁化强度高的铁基硼化物不是很多,而是Nd。 2 铁 14 在那里产生了包含大量Cr或V的B相。 结果,磁化强度降低,剩磁B r  所得磁体的最大磁化强度小于约0.8 T. \n\n [0143] 如上所述,根据本发明的优选实施方式的铁基稀土合金磁体具有独特的结构,其中存在于晶界区域中的铁基硼化物覆盖具有硬磁性的晶粒。 因此,铁基稀土合金磁体也表现出改善的耐腐蚀性。 一般来说,铁基稀土合金磁铁包括 2 Ť 14 除非经过某种处理,否则具有硬磁性能的Q型相显示出较差的抗氧化性和抗腐蚀性。 这是因为R 2 Ť 14 Q型相包括高浓度的易氧化的稀土元素R。 然而,在本发明的优选实施方式中,R的晶粒 2 Ť 14 Q型化合物在R浓度低的晶界区域被铁基硼化物覆盖。 因此,氧化或腐蚀在晶界区域停止,并且可靠地防止了过度的氧化或腐蚀。 另外,以较高浓度存在于晶界区域中的Ti也有助于提高抗氧化性和耐腐蚀性。 这是因为Ti是化学稳定性高的金属元素。 此外,该结构还可以适当地调节交换耦合,从而实现了矫顽力和剩磁良好平衡的优异磁体。 \n\n [0144] 根据本发明的各种优选实施方式,包括添加剂Ti的材料合金的熔体被快速冷却并固化,从而实现了表现出优异的磁性能,包括高矫顽力和高磁化强度的永磁体,同时减小了最小磁导率。 磁铁中包含所需量的稀土元素。 \n\n [0145] 另外,根据本发明的各种优选实施方式,即使通过熔融淬火工艺以降低的冷却速率制备快速凝固的合金,Ti的添加也有效地防止了在熔融淬火工艺中α-Fe相的沉淀。  。 因此,可以采用导致相对较低的冷却速度并且适合于批量生产的带钢铸造方法或熔融淬火工艺,从而有利地降低了制造成本。 \n\n [0146] 应当理解,以上描述仅是对本发明的说明。 在不脱离本发明的情况下,本领域技术人员可以设计出各种替代和修改。 因此,本发明旨在涵盖落入所附权利要求书范围内的所有这样的替代,修改和变化。');
INSERT INTO `os_patent_instruction_text` VALUES (12929, 22758, '【0001】\n\n【発明の属する技術分野】\n\n本発明は、希土類磁石用焼結体の製造方法に関し、特に、R-Fe-B系磁石用の焼結体の製造方法に関する。\n\n【0002】\n\n【従来の技術】\n\n希土類合金の焼結磁石(永久磁石)は、一般に、希土類合金の粉末をプレス成形し、得られた粉末の成形体を焼結し、時効処理することによって製造される。焼結体を磁石にするための着磁は、時効処理の後の任意の段階で実行される。本明細書における「希土類合金焼結体」は、着磁前の焼結体および着磁された焼結体(すなわち焼結磁石)のいずれも含むものとする。\n\n【0003】\n\n現在、サマリウム·コバルト系磁石と、ネオジム·鉄·ボロン系磁石の二種類が各分野で広く用いられている。なかでも、ネオジム·鉄·ボロン系磁石(以下、「R-Fe-B系磁石」と称する。RはYを含む希土類元素、Feは鉄、Bはボロンである。)は、種々の磁石の中で最も高い最大磁気エネルギー積を示し、価格も比較的安いため、各種電子機器へ積極的に採用されている。\n\n【0004】\n\nR-Fe-B系焼結磁石は、主にR2Fe14Bの正方晶化合物からなる主相、Nd等から\n\nなるRリッチ相、およびBリッチ相から構成されている。なお、Feの一部がCoやNiなどの遷移金属と置換されてもよく、Bの一部がCで置換されてもよい。本発明が好適に適用されるR-Fe-B系焼結磁石は、例えば、米国特許第4,770,723号および米国特許第4,792,368号の明細書に記載されている。\n\n【0005】\n\nこのような磁石となるR-Fe-B系合金を作製するために、従来は、インゴット鋳造法(金型鋳造法)が用いられてきた。一般的なインゴット鋳造法によると、出発原料である希土類金属、電解鉄およびフェロボロン合金を高周波溶解し、得られた溶湯を鋳型内で比較的ゆっくりと冷却することによって合金インゴットが作製される。\n\n【0006】\n\n近年、合金の溶湯を単ロール、双ロール、回転ディスク、または回転円筒鋳型の内面などと接触させることによって、比較的速く冷却し、合金溶湯から、インゴットよりも薄い凝固合金(「合金フレーク」と称することにする。)を作製するストリップキャスト法や遠心鋳造法に代表される急冷法が注目されている。このような急冷法によって作製された合金片の厚さは、一般に、約0.03mm以上約10mm以下の範囲にある。急冷法によると、合金溶湯は冷却ロールに接触した面(ロール接触面)から凝固し始め、ロール接触面から厚さ方向に結晶が柱状に成長してゆく。その結果、ストリップキャスト法などによって作製された急冷合金は、短軸方向のサイズが約0.1μm以上約100μm以下で、長軸方向のサイズが約5μm以上約500μm以下のR2Fe14B結晶相と、R2Fe14B結晶相の粒界に分散して存在するRリッチ相とを含有する組織を持つにいたる。Rリッチ相は希土類元素Rの濃度が比較的高い非磁性相である。\n\n【0007】\n\n急冷合金は、従来のインゴット鋳造法によって作製された合金(インゴット合金)に比較して相対的に短い時間(冷却速度:102℃/秒以上、104℃/秒以下)で冷却されているため、組織が微細化され、結晶粒径が小さいという特徴を有している。また、粒界の面積が広く、Rリッチ相は粒界内に広く広がっているため、Rリッチ相の分散性にも優れるという利点がある。これらの特徴が故に、急冷合金を用いることによって、優れた磁気特性を有する磁石を製造することができる。\n\n【0008】\n\nまた、Ca還元法(あるいは還元拡散法)と呼ばれる方法も知られている。この方法は以下の工程を含む。まず、希土類酸化物のうちの少なくとも1種と、鉄粉および純ボロン粉と、フェロボロン粉およびホウ素酸化物のうちの少なくとも1種とを所定の割合で含む混合粉末、あるいは上記構成元素の合金粉または混合酸化物を所定の割合で含む混合粉末に、金属カルシウム(Ca)および塩化カルシウム(CaCl)を混合し、不活性ガス雰囲気下で還元拡散処理を施す。得られた反応生成物をスラリー化し、これを水処理することによって、R-Fe-B系合金の固体が得られる。\n\n【0009】\n\nなお、本明細書においては、固体合金の塊を「合金塊」と呼び、従来のインゴット鋳造法によって得られる合金インゴットおよびストリップキャスト法などの急冷法によって得られる合金フレークなどの溶湯を冷却して得られた凝固合金だけでなく、Ca還元法によって得られる固体合金など、種々の形態の固体合金を含むものとする。\n\n【0010】\n\nプレス成形に供される合金粉末は、これらの合金塊を、例えば水素化粉砕法および/または種々の機械的粉砕法(例えば、フェザーミル、パワーミルやディスクミルが用いられる)で粉砕し、得られた粗粉末(例えば、平均粒径10μm〜500μm)を例えばジェットミルを用いた乾式粉砕法で微粉砕することによって得られる。プレス成形に供せられる合金粉末の平均粒径は、磁気特性の観点から、1.5μm〜7μmの範囲内にあることが好ましい。なお、粉末の「平均粒径」は、特にことわらない限り、ここでは、質量中位径(mass median diameter:MMD)を指すことにする。微粉砕は、ボールミルやアトライターを用いても行うことが出来る。\n\n【0011】\n\nなお、希土類合金粉末は、酸化されやすいという問題がある。この問題を回避するために、例えば、希土類合金粉末の表面に薄い酸化膜を形成する方法が知られている。また希土類合金粉末の表面を潤滑剤で被覆する方法も知られている。なお、本明細書において、希土類合金粉末、表面に酸化膜が形成された希土類合金粉末および潤滑剤で表面が被覆された希土類合金粉末も簡単さのために「希土類合金粉末」と呼ぶ。但し、「希土類合金粉末の組成」は、上記の酸化膜や潤滑剤を含まないこととする。\n\n【0012】\n\n上述の希土類焼結磁石の原料価格は、R-Fe-B系磁石と言えども、比較的高いので、コストの低減および資源の有効利用の観点から、希土類合金焼結体の不良品を、再溶融することなく原料として再利用することが検討されている。\n\n【0013】\n\n例えば、特許第2746818号公報には、Nd-Fe-B系焼結磁石合金のスクラップを粉砕することによって得られた粉末(以下「スクラップ粉末」ということもある。)に、酸化分を補う希土類合金粉末(上記公報中の「合金B」)を混合することによって、スクラップ粉末の焼結性を改善し、再利用する方法が開示されている。\n\n【0014】\n\nまた、特開平11-329811号公報には、R-Fe-B系磁石のスクラップ粉末に、酸洗浄およびCa還元処理などを施すことによって、Nd2Fe14B相を主相とする合金粉末を作製し、この粉末の焼結性を改善するための組成調整用合金粉末を混合することによって、スクラップ粉末を利用する方法が開示されている。\n\n【0015】\n\n【発明が解決しようとする課題】\n\nしかしながら、上述の方法はいずれも目的の希土類合金焼結体を製造するための合金粉末と本質的に異なる組成の合金粉末(合金B粉末または組成調整用合金粉末)を用意する必要があり、製造プロセス全体を複雑化するという問題がある。上述の合金B粉末または組成調整用合金粉末は、これらだけを用いて希土類磁石用の焼結体を製造することが難しく、仮に磁石にできたとしても大幅に特性の低いものとなる。\n\n【0016】\n\n本発明は、上記の諸点に鑑みてなされたものであり、本発明の主な目的は、従来よりも効率よく希土類合金焼結体を原料として再利用することができる、希土類合金焼結体の製造方法を提供することにある。\n\n【0017】\n\n【課題を解決するための手段】\n\n本発明による希土類磁石用焼結体の製造方法は、(a)希土類合金焼結体を水素化粉砕法を用いて粗粉砕することによって、第1粗粉末を作製する工程と、(b)前記第1粗粉末を微粉砕することによって、第1微粉末を作製する工程と、(c)希土類合金原料の合金塊を粉砕することによって第2微粉末を作製する工程と、(d)前記第1微粉末と前記第2微粉末とを含む混合粉末を焼結する工程とを包含し、前記第1微粉末および前記第2微粉末はいずれも、(LR1-xHRx)2T14A(Tは、Fe、またはFeとFe以外の遷移金属元素の少なくとも1種との混合物、Aはボロンまたはボロンと炭素との混合物、LRは軽希土類元素の少なくとも1種、HRは重希土類元素の少なくとも1種、0≦x【0018】\n\n前記第1微粉末および前記第2微粉末は、いずれも、25質量%〜40質量%の希土類元素R(R=LR1-xHRx)と、0.6質量%〜1.6質量%のAとを含むことが好ましい。RおよびA以外の残部は、Tおよび微量添加元素と不可避不純物を含む。微量添加元素は、Al、Cu、Ga、Cr、Mo、V、NbおよびMnの少なくとも1種であることが好ましい。添加量は微量添加物の合計が1質量%以下であることが好ましい。最終的に得られる希土類磁石用焼結体が含む希土類元素Rの含有率は34質量%以下が好ましく、3\n\n3質量%以下であることがさらに好ましい。\n\n【0019】\n\n前記希土類合金焼結体および前記希土類合金原料の合金塊は、いずれも、(LR1-xHRx)2T14Aで表される化合物を80体積%以上含有することが好ましい。\n\n【0020】\n\n前記混合粉末中における前記第1微粉末の質量分率は、前記第2微粉末の質量の0.1%以上10%以下の範囲内にあることが好ましい。\n\n【0021】\n\n前記第1微粉末の主相の前記組成式中のxの値と前記第2微粉末の主相の前記組成式中のxの値が互いに異なる場合は、前記混合粉末中における前記第1微粉末の質量分率は、前記第2微粉末の質量の5%未満であることが好ましい。磁気特性の観点からは、3%未満であることがさらに好ましい。\n\n【0022】\n\n工程(a)において、前記希土類合金焼結体は、それぞれが50g以下の複数の塊として、水素化粉砕法による粗粉砕に供されることが好ましい。\n\n【0023】\n\n工程(c)は、前記合金塊を粗粉砕することによって第2粗粉末を作製する工程と、前記第2粗粉末を微粉砕することによって前記第2微粉末を作製する工程とを包含し、前記第1粗粉末と前記第2粗粉末とを混合した後、前記第1粗粉末および前記第2粗粉末を微粉砕することによって、前記第1微粉末と前記第2微粉末との混合粉末が作製されることが好ましい。\n\n【0024】\n\nあるいは、工程(c)が、前記合金塊を粗粉砕することによって第2粗粉末を作製する工程と、前記第2粗粉末を微粉砕することによって前記第2微粉末を作製する工程とを包含し、前記合金塊と前記希土類合金焼結体と混合した状態で水素化粉砕することによって前記第1粗粉末と前記第2粗粉末との混合粗粉末を作製する工程と、前記混合粗粉末を微粉砕することによって、前記第1微粉末と前記第2微粉末との混合粉末が作製されるプロセスを採用してもよい。\n\n【0025】\n\n工程(c)における前記合金塊は、前記希土類合金原料の溶湯から急冷法によって作製されたものであることが好ましい。\n\n【0026】\n\n前記希土類合金焼結体として、希土類磁石用焼結体の不良品を用いることができる。\n\n【0027】\n\n【発明の実施の形態】\n\n以下、本発明による希土類合金焼結体の製造方法の実施形態を説明する。\n\n【0028】\n\n本発明による希土類磁石用焼結体の製造方法は、(a)希土類合金焼結体を水素化粉砕法を用いて粗粉砕することによって、第1粗粉末を作製する工程と、(b)第1粗粉末を微粉砕することによって、第1微粉末を作製する工程と、(c)希土類合金原料の溶湯を冷却することによって得られた合金塊を粉砕することによって第2微粉末を作製する工程と、(d)第1微粉末と第2微粉末とを含む混合粉末を焼結する工程とを包含する。第1微粉末および第2微粉末はいずれも、(LR1-xHRx)2T14Aで表される組成の主相を有する。\n\n【0029】\n\n本明細書においては、R-Fe-B系合金焼結体の主相の組成を上記の様に、(LR1-xHRx)2T14Aという組成式で表すことにする。Tは、Fe、またはFeとFe以外の遷移金属元素の少なくとも1種との混合物、Aはボロンまたはボロンと炭素との混合物、LRは軽希土類元素の少なくとも1種、HRは重希土類元素の少なくとも1種である。また、LRとHRとをまとめてRで表記する。\n\n【0030】\n\n軽希土類元素LRは、La、Ce、Pr、Nd、Pm、Sm、Eu、Gdなどであり、NdおよびPrの少なくとも1種を含むことが好ましい。重希土類元素HRは、Y、Tb、Dy、Ho、Er、Tm、Yb、Luなどであり、Dy、HoおよびTbの内から選ばれる少なくとも1種を含むことが好ましい。なお、軽希土類元素LRに対する重希土類元素HRの置換量(原子数比)を示すxは0≦x【0031】\n\nまた、遷移金属元素はTi、V、Cr、Mn、Fe、Co、Niなどであり、Tは、Fe、またはFeの一部がNiおよびCoの少なくとも一方で置換されたものが好ましい。\n\n【0032】\n\n磁気特性に優れた焼結磁石を得るためには、第1微粉末および第2微粉末は、いずれも、25質量%〜40質量%の希土類元素R(R=LR1-xHRx)と、0.6質量%〜1.6質量%のAとを含むことが好ましい。RおよびA以外の残部は、Tおよび微量添加元素と不可避不純物を含む。微量添加元素は、Al、Cu、Ga、Cr、Mo、V、NbおよびMnの少なくとも1種であることが好ましい。添加量は微量添加物の合計が1質量%以下であることが好ましい。さらに、希土類合金焼結体および前記希土類合金原料の合金塊は、いずれも、(LR1-xHRx)2T14Aで表される化合物を80体積%以上含有することが好ましい。なお、希土類合金原料の溶湯を冷却することによって得られた合金塊は、焼結工程を経ていないので、通常その酸素含有率は質量基準で1000ppm以下である。\n\n【0033】\n\n本発明による希土類合金焼結体の製造方法においては、希土類合金焼結体から作製される第1微粉末と混合した状態で、希土類磁石用焼結体の製造に用いられる第2微粉末は、特別な組成を有する必要が無く、それだけを用いて目的とする希土類磁石用焼結体の製造に供せられるものである。\n\n【0034】\n\n例えば、第2微粉末は、第1微粉末の原料となる希土類合金焼結体を製造するための微粉末であってもよいし、異なってもよい。希土類合金焼結体は、種々の用途に応じて、その配合組成が調整されている。一般に、希土類合金焼結体の製造工場では、種々のグレードの希土類合金焼結体が製造される。例えば、上記組成式中のxの値を変化させることによって、残留磁束密度Brまたは保磁力iHcが異なる希土類合金焼結体を製造することができる。このような製造工場では、上記組成式中のxの値が異なるそれぞれのグレード用の合金塊が用意され、目的のグレードの希土類合金焼結体が製造される。従って、製造工場内には、種々のグレードの合金塊と焼結体(良品および不良品)が存在する。第1微粉末および第2微粉末の材料として、互いに同じグレード用の材料を用いてもよいし、異なるグレードの材料を用いてもよい。もちろん、目的とする希土類焼結磁石の磁気特性を所望の範囲内におさめるために、第1微粉末および第2微粉末の組成と配合量を適宜調節する。\n\n【0035】\n\n但し、焼結体の組成は、焼結過程などでその構成元素(特に希土類元素)が酸化されるために、その原料微粉末の組成と異なる。焼結体を粉砕することによって作製された第1微粉末は、希土類元素が酸化によって消費されているので、液相焼結性が低い傾向にある。上述した従来の再利用方法は、焼結体から作製される原料の焼結性の低さを補うために、合金B(特許第2746818号公報)や組成調整用合金粉末(特開平11-329811号公報)を混合している。\n\n【0036】\n\nこれに対し本発明では、再生原料の焼結性が低い場合には、第1微粉末の配合量を抑制することによって対応する。具体的には、混合粉末中における第1微粉末の質量分率は、第2微粉末の質量の0.1%以上10%以下の範囲内に設定することが好ましい。第1微粉末(再生原料微粉末)の第2微粉末(新原料微粉末)に対する質量分率を10%以下に設\n\n定すれば、十分な焼結性(例えば、十分な焼結体密度が得られる)を確保することが可能で、十分な磁気特性を有する焼結磁石を製造することができる。第1微粉末の第2微粉末に対する質量分率が10%を超えると、焼結性の低下に起因する焼結体密度の低下および焼結体中の酸素含有率の上昇によって、残留磁束密度Brまたは保磁力iHcが低下することがある。一方、第1微粉末の配合比率が低くなると、再利用効率(主にコスト低減効果)が低下するので、第1微粉末の第2微粉末に対する質量分率は0.1%以上であることが好ましい。\n\n【0037】\n\n第1微粉末の主相の組成式中のxの値と第2微粉末の主相の組成式中のxの値が互いに異なる場合、すなわち、上述の例において異なるグレードの焼結体を用いて第1微粉末を作製した場合、混合粉末中における第1微粉末の質量分率は、第2微粉末の質量の5%未満であることが好ましく、磁気特性の観点からは3%未満であることがさらに好ましい。なお、第1微粉末として複数の組成が互いに異なる粉末を用いてもよいし、第2微粉末としても複数の組成が互いに異なる粉末を用いてもよい。また、これらを混合(粗粉末の段階または微粉末の段階)する前に、それぞれの組成を分析し、その結果に基づいて配合量を決めることが好ましい。また、最終的に得られる希土類磁石用焼結体が含む希土類元素Rの含有率は34質量%以下が好ましく、33質量%以下であることがさらに好ましい。\n\n【0038】\n\n次に、本発明による希土類合金焼結体の製造方法において、希土類合金焼結体から第1微粉末を作製する方法を具体的に説明する。\n\n【0039】\n\n希土類合金焼結体から第1微粉末を作製するために、まず粗粉末を作製する。通常、合金塊から微粉末を作製する場合にも、一旦粗粉末を作製した後、それを微粉砕することによって微粉末を作製する。これは、希土類合金粉末はプレス成形性が低いため、所望の粒度分布を有する微粉末を効率良く製造するためである。粗粉砕法としては、水素化粉砕法または機械的な粉砕法が採用されている。本発明による製造方法では、水素化粉砕法を用いて焼結体を粗粉砕する。水素化粉砕法を用いると希土類元素が水素化されるので、他の機械的粉砕法による場合に比べて、その後の工程で希土類元素が酸化されることが抑制される。従って、希土類合金焼結体を原料として再利用することによる酸素含有率の増加を抑制することができる。また、水素化された希土類元素が焼結過程で脱水素化されることによって金属化し液相となるため、焼結性も向上する。水素化粉砕法を用いると機械的粉砕法に比べて、粗粉砕および微粉砕時の生産性が数倍向上するという利点が得られる。水素化粉砕は、例えば、希土類合金焼結体を1MPa以下の水素ガス雰囲気に約0.5時間〜約10時間さらすことによって実行されることが好ましい。\n\n【0040】\n\n水素化粉砕法とは、希土類合金原料(典型的には合金塊)が水素ガス雰囲気にさらされると、希土類元素の水素化物を生成し、この水素化過程で起こる体積膨張によって合金塊中に微細なクラックが発生する、という現象を利用した粉砕法である。従って、希土類元素の一部が酸化されてしまっている焼結体の粉砕に工業的に用いることは難しいと考えられていた。しかしながら、本発明者が検討した結果、焼結体の粗粉砕にも十分利用できることが分かった。さらに、効率よく焼結体を粗粉砕するためには、水素化粉砕する焼結体(比重約7.5g)は、約50g以下の塊であることが好ましい。焼結体の個々の質量が50gを超える大きさ(例えば、25mm×24mm×11mm以上)であると、焼結体の全体を粗粉砕することができず、焼結体の中心に未粉砕部分が残ることがある。焼結体を完全に粗粉砕するためには、個々の質量が約25g以下の塊として水素粉砕に供することが好ましい。焼結体の不良品の重さが約50gを超える場合には、機械的に粉砕(例えばジョークラッシャーを用いて)することが好ましい。\n\n【0041】\n\n水素化粉砕によって得られた粗粉末(第1粗粉末)を、必要に応じてさらに機械粉砕(例えばディスクミルを用いて)した後、ジェットミルを用いた乾式粉砕法で微粉砕する。得\n\nられる微粉末(第1微粉末)の平均粒径は、1.5μm〜7μmの範囲内にあることが好ましい。ジェットミルを用いた乾式粉砕法を用いる場合には、酸素を多く含む1μm以下の微粉末を部分的に除去することが望ましい。\n\n【0042】\n\n粗粉末をジェットミルを用いて微粉砕する工程は、第2微粉末(新原料微粉末)を作製するための微粉砕工程と同一工程で実行することができる。第2微粉末は、上述したように、所定の組成の合金塊を水素化粉砕法などを用いて粗粉砕し、得られた粗粉末(第2粗粉末)を、必要に応じてさらに機械粉砕(例えばディスクミルを用いて)した後、ジェットミルを用いた乾式粉砕法で微粉砕することによって作製される。また、第2微粉末の平均粒径も1.5μm〜7μmの範囲内にあることが好ましい。従って、第1粗粉末と第2粗粉末とを乾式混合(例えばロッキングミキサを用いて)した後、得られた混合粗粉をジェットミルで微粉砕することによって、第1微粉末と第2微粉末との混合物を得ることができる。なお、必要に応じて、乾式混合工程や微粉砕工程において、潤滑剤を添加し、第1および第2微粉末の表面を潤滑剤で覆ってもよい。\n\n【0043】\n\nもちろん、第1粗粉末および第2粗粉末を作製するための水素化粉砕工程およびその後の工程を同一の工程で実行してもよい。すなわち、水素化粉砕前に第1粗粉末の原料(例えば焼結体の塊)と第2粗粉末の原料を(例えばストリップキャスト合金塊)を混合しておき、この混合物を同一工程で水素化粉砕することによって混合粗粉を作製してもよい。いずれにしても、酸化を抑制するために、第1微粉末および第2微粉末を作製する前に、これらの材料を混合することが好ましい。\n\n【0044】\n\nなお、第2微粉末としては、急冷法によって作製されたものを用いることが好ましい。急冷法によって作製された第2微粉末を用いると、磁気特性に優れるだけでなく、焼結性に優れるので、第1微粉末の低い焼結性を補う効果が高いからである。急冷法によって作製された第2微粉末の焼結性が高い原因は、インゴット法で作製された微粉末よりも、Rリッチ相が表面に細かく分散しているためと推測される。\n\n【0045】\n\nまた、第1微粉末および第2微粉末の酸素含有率は低いことが好ましい。酸素含有率が高すぎると、上記の配合比の範囲内であっても、所望の磁気特性が得られないことがある。第1微粉末の酸素含有率は1500ppmから10000ppmの範囲内にあり、第2微粉末の酸素含有率は1500ppmから7000ppmの範囲内にあることが好ましい。但し、第1微粉末の酸素含有率が上記範囲を超える場合であっても、第2微粉末として酸素含有率の低い材料を選べば、十分な磁気特性が得られる場合もある。目標の磁気特性を考慮して、第1微粉末の配合量を設定すればよい。\n\n【0046】\n\n以下、公知の方法に従って、混合粉末をプレス成形することによって所望の形状の成形体を形成し、必要に応じて追加される脱バインダ処理を経て、成形体を焼結した後、時効処理を施すことによって、焼結体が得られる。\n\n【0047】\n\n混合粉末のプレス成形は、例えば、電動プレスを用い、約0.2MA/m〜4MA/mの磁界中で配向させつつ、0.2ton/cm2〜2.0ton/cm2(1.96×104kPa〜1.96×105kPa)の圧力で行なわれる。\n\n【0048】\n\n得られる成形体を、例えば約1000℃〜約1100℃の温度で、不活性ガス(希ガスや窒素ガス)雰囲気下、または真空中で、約1〜約5時間焼結する。得られた焼結体を、例えば約450℃〜約800℃の温度で、約1〜約8時間時効処理することによって、R-Fe-B系合金焼結体が得られる。時効処理は省略しても良い。なお、焼結体に含まれる炭素の量を減らし、磁気特性を向上するために、上記焼結工程の前に、必要に応じて、合金粉末の表面を覆う潤滑剤を加熱除去してもよい。加熱除去(脱バインダ)工程は、潤滑\n\n剤の種類にもよるが、例えば、約100℃から約600℃の温度で、減圧雰囲気下で、約0.5時間〜約6時間実行される。なお、約1000℃〜約1100℃の温度で焼結する前に、一旦、成形体を約800℃〜約950℃で約0.1〜2.0時間保持し、水素化された希土類元素を含む成形体から水素を放出させることによって、焼結性を向上させることができる。\n\n【0049】\n\n得られた焼結体を着磁することによって、焼結磁石が完成する。着磁工程は、焼結工程後の任意の時点で実行することが可能である。焼結体は、必要に応じて、仕上げ加工(例えば面取り)および表面処理(例えばめっき)を経て完成される。本発明の製造方法によって製造された希土類合金焼結体は、第2微粉末(新規原料粉末)だけを用いて製造した焼結体とほぼ同等の特性を有し得る。\n\n【0050】\n\n以下、本発明による希土類合金焼結体および焼結磁石の製造方法について、実施例を挙げて説明するが、本発明は以下の実施例によって何ら限定されるものではない。\n\n【0051】\n\n第1微粉末(再生原料粉末)は、希土類合金焼結体の不良品(約500g、約50mm×38mm×35mm)から作製した。ここで、水素化粉砕に供する前に、上記焼結体をジョークラッシャーを用いて機械的に粉砕し、得られた塊の大きさ(質量)ごとに水素化粉砕(0.2MPa水素ガス雰囲気中に3時間保持)し、得られた粗粉末をディスクミル(例えば、ギャップ幅0.3mm)でさらに粉砕した後、ジェットミルで微粉砕(微粉末の平均粒径:約4.5μm)することによって、それぞれ第1微粉末(表1中の試料No.1〜5)を得た。なお、焼結体を粉砕せずに水素化粉砕に供した試料は、完全に粉砕することができず、焼結体の中心付近に未粉砕部分(芯)が残存した。\n\n【0052】\n\n第2微粉末を作製するための合金塊は、所定の組成を有する合金フレークをストリップキャスト法で製造した。合金フレーク中の酸素含有率は320ppmであった。この合金フレークを水素化粉砕法で粉砕することによって第2粗粉末を得た。この第2粗粉末をさらにディスクミルで粉砕した後、ジェットミルを用いて微粉砕することによって、平均粒径が約4.5μmの第2微粉末を得た。なお、第1微粉末および第2微粉末を作製するためのジェットミル粉砕は、希土類元素の酸化を抑制するために、僅かに酸素を含む窒素ガス雰囲気中で行った。なお、第1微粉末の原料として用いた焼結体も、第2微粉末と同様の製法により作製した微粉末を用いて形成したものである。ジェットミルによる粉砕工程は、特開2002-33206号公報および米国特許出願No.09/851、423号に開示されている。\n\n【0053】\n\n第1微粉末と第2微粉末の組成を表2に示す。なお、第1微粉末の組成は、ディスクミルで粉砕した後の分析値を示し、試料No.1〜5の全て測定誤差範囲内で略同じ組成を有していた。表2中の数値は質量%で、表に記載していない残部は、Feおよび不可避不純物である。\n\n【0054】\n\n試料No.1〜5の第1微粉末を第2微粉末に対して5質量%混合して得られた混合粉末を用いて、焼結体を作製した。また、第2微粉末だけを用いて焼結体を作製した(試料No.6)。\n\n【0055】\n\nプレス成形工程以降のプロセスは以下の条件で実行した。\n\n【0056】\n\n上述の混合粉末(試料No.1〜5)および第2微粉末(試料No.6)をプレス成形(プレス圧力0.8ton/cm2(7.84×104kPa)、配向磁界0.96MA/m(1.2T))することによって、成形体(縦40mm×横30mm×高さ20mm)を得た。なお、配向磁界の方向は圧縮方向に垂直な方向である。この成形体を、減圧Ar雰\n\n囲気中に900℃で1時間保持し脱水素処理したのち、1050℃で4時間、焼結した。得られた焼結体に500℃で1時間の時効処理を施した後、5.4mm×12mm×12mmの試験片に加工した。得られた焼結磁石の磁気特性をB-Hトレーサを用いて評価した。それぞれ得られた焼結磁石(焼結体)の密度および磁気特性を表1に示す。\n\n【0057】\n\n表1の結果から分かるように、水素化粉砕に供する焼結体の塊の質量が50gを超えると磁気特性(保磁力)が低下する。さらに、焼結体の塊の質量が70gを超えると、焼結体密度までも低下する。この焼結体密度および磁気特性の低下は、微粉砕粉の中に本来混ざるべきでない粗粉末が混入し、その結果、焼結性が低下するとともに、粗大な結晶粒が生成されたためと考えられる。それに対し、焼結体の塊の質量が50g以下であると、第2微粉末だけを用いた場合とほぼ同等の磁気特性が得られた。さらに、25g以下の塊を用いると、第2微粉末だけを用いた場合と実質的に同じ磁気特性が得られた。このことから、水素化粉砕に供する焼結体の塊の質量は、50g以下であることが好ましく、25g以下であることがさらに好ましい。すなわち、焼結体の塊の質量が50g以下であると、水素化粉砕工程において焼結体の中心付近まで水素化粉砕され、その後の微粉砕工程(例えば、ジェットミルを用いる)において微粉末中に硬い粗粉末が残存することを防止することができる。なお、微粉砕工程の後で残存する粗粉末を除去する工程を設けても良い。通常、焼結体は質量基準で3500ppmから6500ppmの酸素を含んでいる。\n\n【0058】\n\nさらに、焼結体の結晶粒(主相)の大きさは、20μm以下であることが好ましい。結晶粒の大きさが20μmを超えるとジェットミルによる粉砕性が低下するという問題が発生する。\n\n【0059】\n\n第1微粉末の配合量が5質量%の混合粉を用いた場合の結果を表1に示したが、他の配合量について検討した結果を表3に示す。第1微粉末としては、表1の試料No.5と同じものを用いた。表3から明らかなように、第1微粉末の配合量が15質量%を超えると、焼結密度および磁気特性が低下するのに対し、10質量%以下であると、第2微粉末だけを用いて作製した場合と同等の磁気特性が得られた。\n\n【0060】\n\n【表1】\n\n\n\n【0061】\n\n【表2】\n\n\n\n【0062】\n\n【表3】\n\n\n\n【0063】\n\n【発明の効果】\n\n本発明によると、従来よりも効率よく希土類合金焼結体を原料として再利用することができる希土類合金焼結体の製造方法が提供される。本発明による希土類合金焼結体の製造方法では、希土類合金焼結体から作製される再生原料粉末(第1微粉末)を利用するために特別な組成の希土類合金を作製する必要がないので、現存の製造プロセスを煩雑にすることなく容易に実行される。', '【0001】\n\n【本发明所属的技术领域】\n\n本发明涉及稀土磁体用烧结体的制造方法，特别是涉及R - Fe - B系磁体用的烧结体的制造方法。\n\n【0002】\n\n【以往的技术】\n\n稀土类合金的烧结磁铁（永久磁铁）一般通过对稀土类合金的粉末进行冲压成形，并对所得到的粉末的成形体进行烧结、时效处理来制造。用于使烧结体成为磁铁的磁化在时效处理后的任意阶段执行。本说明书中的“稀土合金烧结体”包括磁化前的烧结体及被磁化的烧结体（即烧结磁铁）中的任一种。\n\n【0003】\n\n目前，在各领域中广泛使用钐（钐）、钴系磁铁和钕时铁及硼系磁铁这两种。其中，优选使用钕或硼系磁铁（以下，称为“ R - Fe - B系磁铁” 。R为含有Y的稀土类元素，Fe为铁，B为硼。）表示各种磁铁中最高的最大磁能积，价格也比较便宜，因此积极地应用于各种电子设备。\n\n【0004】\n\nR - Fe - B系烧结磁铁主要是R - Fe - B系烧结磁铁2Fe14B的由正方晶化合物构成的主相、Nd等\n\n由R富集相和B富集相构成。需要说明的是，Fe的一部分可以与Co 、Ni等过渡金属置换，B的一部分也可以被C取代。适用本发明的R - Fe - B系烧结磁铁例如记载于美国专利第4770723号及美国专利第4792368号的说明书中。\n\n【0005】\n\n为了制作成为这样的磁铁的R - Fe - B系合金，以往使用铸锭铸造法（模具铸造法）。根据一般的铸锭铸造法，将作为起始原料的稀土类金属、电解铁及硼铁合金高频熔化，将得到的熔液在铸模内比较缓慢地冷却，由此制作合金锭。\n\n【0006】\n\n近年来，通过使合金的熔融金属与单辊、双辊、旋转盘或旋转圆筒铸模的内表面等接触，比较快速地冷却，从合金熔液中，称为比锭薄的凝固合金（称为“合金薄片” 。）的带铸法、以离心铸造法为代表的急冷法。通过这样的骤冷法制作的合金片的厚度通常在约0.03 mm以上约10mm以下的范围。根据急冷法，合金熔液从与冷却辊接触的面（辊接触面）开始凝固，结晶从辊接触面沿厚度方向呈柱状成长。其结果，通过薄带连铸法等制作的骤冷合金的短轴方向的尺寸为约0.1 μ m以上约100 μ m以下，长轴方向的尺寸为约5 μ m以上约500 μ m以下的R2Fe14B结晶相和R结晶相2Fe14即，具有含有在B结晶相的晶界分散存在的富R相的组织。富R相是稀土元素R的浓度比较高的非磁性相。\n\n【0007】\n\n骤冷合金与通过现有的铸锭铸造法制作的合金（铸锭合金）相比，相对较短的时间（冷却速度：102℃ /秒以上、10 ℃ /秒以上4℃ /秒以下）冷却，因此具有组织微细化、结晶粒径小的特征。另外，晶界的面积大，富R相在晶界内广泛扩散，因此具有富R相的分散性也优异的优点。因此，通过使用骤冷合金，能够制造具有优异的磁特性的磁铁。\n\n【0008】\n\n另外，还已知有被称为Ca还原法（或还原扩散法）的方法。该方法包括以下的工序。首先，在以规定比例含有稀土类氧化物中的至少1种、铁粉和纯硼粉和硼铁粉和硼氧化物中的至少1种的混合粉末、或者以规定比例含有上述构成元素的合金粉或混合氧化物的混合粉末中使用，混合金属钙（Ca）和氯化钙（CaCl），在惰性气体气氛下实施还原扩散处理。将得到的反应产物浆料化，将其进行水处理，由此得到R - Fe - B系合金的固体。\n\n【0009】\n\n需要说明的是，在本说明书中，将固体合金的块称为“合金块” ，不仅包含通过以往的铸锭铸造法得到的合金锭和通过薄带连铸法等急冷法得到的合金薄片等熔融金属而得到的凝固合金，还包含通过Ca还原法得到的固体合金等各种形态的固体合金。\n\n【0010】\n\n供于压制成型的合金粉末可以通过将这些合金块例如利用氢化粉碎法和/或各种机械粉碎法（例如，使用球磨机、功率磨机或盘式粉碎机）粉碎，将得到的粗粉末（例如平均粒径10 μ m ～ 500 μ m）用例如使用气流粉碎机的干式粉碎法进行微粉碎而得到。从磁特性的观点出发，供于压制成型的合金粉末的平均粒径优选在1.5 μ m ～ 7 μ m的范围内。需要说明的是，粉末的“平均粒径”只要没有特别说明，在此，以质量中位径（mass median diameter：MMD）。微粉碎可以使用球磨机或磨碎机进行。\n\n【0011】\n\n另外，稀土合金粉末存在容易被氧化的问题。为了避免该问题，例如已知在稀土合金粉末的表面形成薄的氧化膜的方法。另外，还已知用润滑剂覆盖稀土合金粉末的表面的方法。另外，在本说明书中，为了简化稀土合金粉末、表面形成有氧化膜的稀土合金粉末和用润滑剂覆盖了表面的稀土合金粉末，称为“稀土合金粉末” 。其中，“稀土合金粉末的组成”不包含上述的氧化膜或润滑剂。\n\n【0012】\n\n上述稀土类烧结磁铁的原料价格虽说是R - Fe - B系磁铁也比较高，因此从成本的降低以及资源的有效利用的观点出发，正在研究将稀土类合金烧结体的不合格品作为原料再利用而不再熔融。\n\n【0013】\n\n例如，在日本专利第2746818号公报中公开了通过将Nd - Fe - B系烧结磁铁合金的废料粉碎而得到的粉末（以下也称为“废料粉末” 。）中，公开了通过混合补充氧化成分的稀土合金粉末（上述公报中的“合金B ”）来改善废料粉末的烧结性，进行再利用的方法。\n\n【0014】\n\n另外，在日本特开平11 - 329811号公报中，通过对R - Fe - B系磁铁的废料粉末实施酸洗和Ca还原处理等，从而使Nd - Fe - B系磁铁的废料粉末含有Nd2Fe14公开了通过制作以B相为主相的合金粉末，并混合用于改善该粉末的烧结性的组成调整用合金粉末来利用废料粉末的方法。\n\n【0015】\n\n【发明所要解决的课题】\n\n但是，上述方法均需要准备与用于制造目标稀土类合金烧结体的合金粉末在本质上不同组成的合金粉末（合金B粉末或组成调整用合金粉末），存在使制造工艺整体复杂化的问题。上述的合金B粉末或组成调整用合金粉末难以仅使用它们来制造稀土类磁铁用的烧结体，即使能够制成磁铁，特性也大幅降低。\n\n【0016】\n\n本发明是鉴于上述各点而完成的，本发明的主要目的在于提供一种能够比以往更高效地将稀土合金烧结体作为原料进行再利用的稀土合金烧结体的制造方法。\n\n【0017】\n\n【用于解决课题的手段】\n\n本发明的稀土磁体用烧结体的制造方法通过使用氢化粉碎法对（a）稀土合金烧结体进行粗粉碎而得到，通过对制作第1粗粉末的工序和（b）所述第1粗粉末进行微粉碎来进行，包含制作第1微粉末的工序、（c）将稀土合金原料的合金块粉碎而制作第2微粉末的工序、（d）烧结包含所述第1微粉末和所述第2微粉末的混合粉末的工序，所述第1微粉末和所述第2微粉末均为（LR1-xHRx）2T14A（T为Fe 、或Fe与Fe以外的过渡金属元素的至少1种的混合物，A为硼或硼与碳的混合物，LR为轻稀土元素的至少1种，HR为重稀土元素的至少1种，0 ≤ x ＜ 1）所表示的组成的主相，由此实现上述目的。\n\n【0018】\n\n上述第1微粉末和上述第2微粉末均为25质量％ ～ 40质量％的稀土类元素R（R ＝ LR1-xHRx）和0.6质量％ ～ 1.6质量％的A 。R和A以外的余量含有T和微量添加元素和不可避免的杂质。微量添加元素优选为Al 、Cu 、Ga 、Cr 、Mo 、V 、Nb及Mn中的至少1种。添加量优选微量添加物的合计为1质量％以下。最终得到的稀土磁体用烧结体含有的稀土元素R的含有率优选为34质量％以下，3为3\n\n3进一步优选为质量％以下。\n\n【0019】\n\n上述稀土合金烧结体及上述稀土合金原料的合金块均为（LR1-xHRx）2T14优选含有80体积％以上的由A表示的化合物。\n\n【0020】\n\n优选所述混合粉末中的所述第1微粉末的质量分率在所述第2微粉末的质量的0.1 ％以上且10 ％以下的范围内。\n\n【0021】\n\n在所述第1微粉末的主相的所述组成式中的x的值与所述第2微粉末的主相的所述组成式中的x的值互不相同的情况下，优选所述混合粉末中的所述第1微粉末的质量分率小于所述第2微粉末的质量的5 ％ 。从磁特性的观点出发，进一步优选小于3 ％ 。\n\n【0022】\n\n在工序（a）中，上述稀土合金烧结体优选分别作为50g以下的多个块，供于采用氢化粉碎法的粗粉碎。\n\n【0023】\n\n工序（c）包括通过对所述合金块进行粗粉碎来制作第2粗粉末的工序和通过对所述第2粗粉末进行微粉碎来制作所述第2微粉末的工序，将上述第1粗粉末和上述第2粗粉末混合后，对上述第1粗粉末和上述第2粗粉末进行微粉碎，由此得到上述第1粗粉末和上述第2粗粉末，优选制作所述第1微粉末与所述第2微粉末的混合粉末。\n\n【0024】\n\n或者，工序（c）包括通过对所述合金块进行粗粉碎来制作第2粗粉末的工序和通过对所述第2粗粉末进行微粉碎来制作所述第2微粉末的工序，通过在将所述合金块和所述稀土合金烧结体混合的状态下进行氢化粉碎来制作所述第1粗粉末和所述第2粗粉末的混合粗粉末的工序、和对所述混合粗粉末进行微粉碎，从而形成所述混合粗粉末，也可以采用制作所述第1微粉末与所述第2微粉末的混合粉末的工艺。\n\n【0025】\n\n工序（c）中的所述合金块优选为从所述稀土合金原料的熔液通过骤冷法制作的合金块。\n\n【0026】\n\n作为上述稀土类合金烧结体，可以使用稀土类磁铁用烧结体的不合格品。\n\n【0027】\n\n【发明的实施方式】\n\n以下，对本发明的稀土合金烧结体的制造方法的实施方式进行说明。\n\n【0028】\n\n本发明的稀土磁体用烧结体的制造方法通过使用氢化粉碎法对（a）稀土合金烧结体进行粗粉碎而得到，通过对制作第1粗粉末的工序和（b）第1粗粉末进行微粉碎来进行，包含制作第1微粉末的工序、（c）通过将通过冷却稀土合金原料的熔液而得到的合金块粉碎来制作第2微粉末的工序、（d）烧结包含第1微粉末和第2微粉末的混合粉末的工序。第1微粉末和第2微粉末均为（LR1-xHRx）2T14具有由A表示的组成的主相。\n\n【0029】\n\n在本说明书中，如上所述，将R - Fe - B系合金烧结体的主相的组成设为（LR1-xHRx）2T14A）的组成式表示。T为Fe 、或Fe与Fe以外的过渡金属元素中的至少1种的混合物，A为硼或硼与碳的混合物，LR为轻稀土元素的至少1种，HR为重稀土元素中的至少1种。另外，LR和HR统称为R 。\n\n【0030】\n\n轻稀土元素LR为La 、Ce 、Pr 、Nd 、Pm 、Sm 、Eu 、Gd等，优选含有Nd及Pr中的至少1种。重稀土元素HR为Y 、Tb 、Dy 、Ho 、Er 、Tm 、Yb 、Lu等，优选含有选自Dy 、Ho和Tb中的至少1种。另外，表示重稀土元素HR相对于轻稀土元素LR的置换量（原子数比）的x在0 ≤ x ＜ 1的范围内，也可以不含有重稀土元素HR 。\n\n【0031】\n\n另外，过渡金属元素为Ti 、V 、Cr 、Mn 、Fe 、Co 、Ni等，T优选为Fe 、或Fe的一部分被Ni和Co中的至少一者取代。\n\n【0032】\n\n为了得到磁特性优异的烧结磁铁，第1微粉末和第2微粉末均为25质量％ ～ 40质量％的稀土类元素R（R ＝ LR1-xHRx）和0.6质量％ ～ 1.6质量％的A 。R和A以外的余量含有T和微量添加元素和不可避免的杂质。微量添加元素优选为Al 、Cu 、Ga 、Cr 、Mo 、V 、Nb及Mn中的至少1种。添加量优选微量添加物的合计为1质量％以下。进而，稀土合金烧结体及上述稀土合金原料的合金块均为（LR1-xHRx）2T14优选含有80体积％以上的由A表示的化合物。需要说明的是，通过冷却稀土合金原料的熔液而得到的合金块不经过烧结工序，因此通常其含氧率以质量基准计为1000ppm以下。\n\n【0033】\n\n在本发明的稀土类合金烧结体的制造方法中，在与由稀土类合金烧结体制作的第一微粉末混合的状态下，用于稀土类磁铁用烧结体的制造的第二微粉末不需要具有特别的组成，仅使用其而供于作为目标的稀土类磁铁用烧结体的制造。\n\n【0034】\n\n例如，第2微粉末可以是用于制造成为第1微粉末的原料的稀土合金烧结体的微粉末，也可以不同。稀土合金烧结体根据各种用途来调整其配合组成。通常，在稀土类合金烧结体的制造工厂中，制造各种等级的稀土类合金烧结体。例如，通过使上述组成式中的x的值变化，能够制造剩余磁通密度Br或矫顽力iHc不同的稀土合金烧结体。在这样的制造工厂中，准备上述组成式中的x的值不同的各个等级用的合金块，制造目标等级的稀土类合金烧结体。因此，在制造工厂内存在各种等级的合金块和烧结体（合格品及不合格品）。作为第1微粉末和第2微粉末的材料，可以使用彼此相同的等级用的材料，也可以使用不同等级的材料。当然，为了将作为目标的稀土类烧结磁铁的磁特性抑制在所期望的范围内，适当调节第一微粉末和第二微粉末的组成和配合量。\n\n【0035】\n\n但是，烧结体的组成在烧结过程等中其构成元素（特别是稀土类元素）被氧化，因此与该原料微粉末的组成不同。通过将烧结体粉碎而制作的第1微粉末由于稀土类元素因氧化而被消耗，因此存在液相烧结性低的倾向。上述以往的再利用方法为了弥补由烧结体制作的原料的烧结性的低，而混合合金B（日本专利第2746818号公报）、组成调整用合金粉末（日本特开平11 - 329811号公报）。\n\n【0036】\n\n与此相对，在本发明中，在再生原料的烧结性低的情况下，通过抑制第1微粉末的配合量来应对。具体而言，混合粉末中的第1微粉末的质量分率优选设定在第2微粉末的质量的0.1 ％以上且10 ％以下的范围内。将第1微粉末（再生原料微粉末）相对于第2微粉末（新原料微粉末）的质量分率设为10 ％以下\n\n如果恒定，则能够确保充分的烧结性（例如，能够得到充分的烧结体密度），能够制造具有充分的磁特性的烧结磁铁。若第1微粉末相对于第2微粉末的质量分率超过10 ％ ，则由于烧结性的降低所引起的烧结体密度的降低及烧结体中的氧含有率的上升，有时剩余磁通密度Br或矫顽力iHc降低。另一方面，若第1微粉末的配合比率变低，则再利用效率（主要是成本降低效果）降低，因此第1微粉末相对于第2微粉末的质量分率优选为0.1 ％以上。\n\n【0037】\n\n在第1微粉末的主相的组成式中的x的值与第2微粉末的主相的组成式中的x的值互不相同的情况下，即，在上述例子中使用不同等级的烧结体来制作第一微粉末的情况下，混合粉末中的第1微粉末的质量分率优选小于第2微粉末的质量的5 ％ ，从磁特性的观点出发，进一步优选小于3 ％ 。另外，作为第1微粉末，可以使用多种组成互不相同的粉末，作为第2微粉末，也可以使用多个组成互不相同的粉末。另外，优选在将它们混合（粗粉末的阶段或微粉末的阶段）之前，对各自的组成进行分析，并基于其结果来决定配合量。另外，最终得到的稀土类磁铁用烧结体含有的稀土元素R的含有率优选为34质量％以下，进一步优选为33质量％以下。\n\n【0038】\n\n接着，对在本发明的稀土类合金烧结体的制造方法中，由稀土类合金烧结体制作第一微粉末的方法进行具体说明。\n\n【0039】\n\n为了由稀土合金烧结体制作第一微粉末，首先制作粗粉末。通常，在由合金块制作微粉末的情况下，也先制作粗粉末后，将其进行微粉碎，由此制作微粉末。这是由于稀土合金粉末的冲压成形性低，因此能够高效地制造具有所希望的粒度分布的微粉末。作为粗粉碎法，采用氢化粉碎法或机械粉碎法。在本发明的制造方法中，使用氢化粉碎法对烧结体进行粗粉碎。若使用氢化粉碎法，则稀土类元素被氢化，因此与利用其他的机械粉碎法的情况相比，能够抑制在之后的工序中稀土类元素被氧化。因此，能够抑制因将稀土类合金烧结体作为原料再利用而导致的氧含有率的增加。另外，被氢化的稀土类元素在烧结过程中被脱氢化而成为液相，因此烧结性也提高。使用氢化粉碎法时，与机械粉碎法相比，可得到粗粉碎及微粉碎时的生产率提高数倍的优点。加氢粉碎优选例如通过将稀土类合金烧结体在1MPa以下的氢气气氛中暴露约0.5小时～约10小时来执行。\n\n【0040】\n\n氢化粉碎法是利用稀土合金原料（典型的是合金块）暴露于氢气气氛时，生成稀土元素的氢化物，利用在该氢化过程中引起的体积膨胀而在合金块中产生微细的裂纹这样的现象的粉碎法。因此，认为难以在工业上使用稀土类元素的一部分被氧化的烧结体的粉碎。但是，本发明人进行了研究，结果可知，也能够充分地利用于烧结体的粗粉碎。进而，为了高效地对烧结体进行粗粉碎，优选进行氢化粉碎的烧结体（比重约7.5 g）为约50g以下的块。若烧结体的各个质量为超过50g的大小（例如25mm × 24mm × 11mm以上），则无法对烧结体的整体进行粗粉碎，有时会在烧结体的中心残留未粉碎部分。为了将烧结体完全粗粉碎，优选作为各个质量为约25g以下的块供于氢粉碎。在烧结体的不合格品的重量超过约50g的情况下，优选机械粉碎（例如使用颚式破碎机）。\n\n【0041】\n\n将通过氢化粉碎得到的粗粉末（第1粗粉末）根据需要进一步进行机械粉碎（例如使用盘磨机）后，利用使用喷射磨机的干式粉碎法进行微粉碎。得到\n\n所得到的微粉末（第1微粉末）的平均粒径优选在1.5 μ m ～ 7 μ m的范围内。在使用使用了气流粉碎机的干式粉碎法的情况下，优选部分地除去含有较多氧的1 μ m以下的微粉末。\n\n【0042】\n\n使用喷射磨机对粗粉末进行微粉碎的工序可以在与用于制作第二微粉末（新原料微粉末）的微粉碎工序相同的工序中执行。如上所述，使用氢化粉碎法等对规定组成的合金块进行粗粉碎，将所得到的粗粉末（第2粗粉末）根据需要进一步进行机械粉碎（例如使用盘磨机）后，通过使用气流粉碎机的干式粉碎法进行微粉碎来制作。另外，第2微粉末的平均粒径也优选在1.5 μ m ～ 7 μ m的范围内。因此，通过将第1粗粉末和第2粗粉末进行干式混合（例如使用摇摇混合器）后，利用气流粉碎机对得到的混合粗粉进行微粉碎，能够得到第1微粉末与第2微粉末的混合物。需要说明的是，根据需要，在干式混合工序、微粉碎工序中，也可以添加润滑剂，用润滑剂覆盖第一微粉末及第二微粉末的表面。\n\n【0043】\n\n当然，也可以在同一工序中执行用于制作第1粗粉末和第2粗粉末的氢化粉碎工序和其后的工序。即，也可以在氢化粉碎前预先混合第1粗粉末的原料（例如烧结体的块）和第2粗粉末的原料（例如薄带连铸合金块），将该混合物在同一工序中进行氢化粉碎，由此制作混合粗粉。总之，为了抑制氧化，优选在制作第1微粉末和第2微粉末之前混合这些材料。\n\n【0044】\n\n另外，作为第2微粉末，优选使用通过骤冷法制作的微粉末。这是因为，若使用通过骤冷法制作的第2微粉末，则不仅磁特性优异，而且烧结性优异，因此补偿第1微粉末的低烧结性的效果高。推测是由于通过骤冷法制作的第2微粉末的烧结性高的原因在于，与通过锭法制成的微粉末相比，富R相微细地分散于表面。\n\n【0045】\n\n另外，优选第1微粉末和第2微粉末的氧含有率低。若氧含有率过高，则即使在上述的配合比的范围内，有时也无法得到所期望的磁特性。第一微粉末的氧含有率在1500ppm至10000ppm的范围内，第二微粉末的氧含有率优选在1500ppm至7000ppm的范围内。但是，即使在第1微粉末的氧含有率超过上述范围的情况下，如果选择氧含有率低的材料作为第2微粉末，则有时也能够得到充分的磁特性。只要考虑目标的磁特性来设定第一微粉末的配合量即可。\n\n【0046】\n\n以下，按照公知的方法，通过对混合粉末进行压制成型而形成所期望的形状的成型体，经过根据需要追加的脱粘合剂处理，对成型体进行烧结后，实施时效处理，由此得到烧结体。\n\n【0047】\n\n混合粉末的压制成型例如使用电动压力机，在约0.2 MA / m ～ 4MA / m的磁场中取向，并且0.2 ton / cm2〜2.0ton/cm2（1.96×104kPa〜1.96×105kPa）的压力进行。\n\n【0048】\n\n将得到的成型体在例如约1000 ℃ ～约1100 ℃的温度下，在惰性气体（稀有气体或氮气）气氛下或真空中烧结约1 ～约5小时。将所得到的烧结体在例如约450 ℃ ～约800 ℃的温度下进行约1 ～约8小时时效处理，由此得到R - Fe - B系合金烧结体。也可以省略时效处理。需要说明的是，为了减少烧结体中所含的碳的量、提高磁特性，可以在上述烧结工序之前根据需要加热除去覆盖合金粉末的表面的润滑剂。加热除去（脱粘合剂）工序是润滑的\n\n虽然也取决于试剂的种类，但例如在约100 ℃至约600 ℃的温度下，在减压气氛下，约0.5小时～约6小时。需要说明的是，在约1000 ℃ ～约1100 ℃的温度下烧结前，暂时将成型体在约800 ℃ ～约950 ℃下保持约0.1 ～ 2.0小时，从含有氢化的稀土元素的成型体释放氢，由此能够提高烧结性。\n\n【0049】\n\n通过对所得到的烧结体进行磁化，完成烧结磁铁。磁化工序可以在烧结工序后的任意时刻执行。烧结体根据需要经过精加工（例如倒角）和表面处理（例如镀敷）而完成。通过本发明的制造方法制造的稀土合金烧结体可以具有与仅使用第2微粉末（新原料粉末）制造的烧结体大致同等的特性。\n\n【0050】\n\n以下，列举实施例对本发明的稀土合金烧结体及烧结磁铁的制造方法进行说明，但本发明不受以下实施例的任何限定。\n\n【0051】\n\n第1微粉末（再生原料粉末）由稀土合金烧结体的不合格品（约500g 、约50mm × 38mm × 35mm）制作。在此，在供于氢化粉碎之前，使用，使用颚式破碎机对上述烧结体进行机械粉碎，并将其机械粉碎，对每个得到的块的大小（质量）进行氢化粉碎（在0.2 MPa氢气气氛中保持3小时），将所得粗粉末用盘磨机（例如，间隙宽度0.3 mm）进一步粉碎后，用气流粉碎机进行微粉碎（微粉末的平均粒径：约4.5 μ m），分别得到第1微粉末（表1中的试样No.1 ～ 5）。需要说明的是，未将烧结体粉碎而供于氢化粉碎的试样不能完全粉碎，在烧结体的中心附近残留有未粉碎部分（芯）。\n\n【0052】\n\n用于制作第二微粉末的合金块通过薄带连铸法制造具有规定组成的合金薄片。合金薄片中的氧含有率为320ppm 。将该合金薄片用氢化粉碎法粉碎，由此得到第2粗粉末。将该第2粗粉末进一步用盘式粉碎机粉碎后，使用气流粉碎机进行微粉碎，由此得到平均粒径为约4.5 μ m的第2微粉末。需要说明的是，用于制作第一微粉末和第二微粉末的喷射式粉碎机为了抑制稀土类元素的氧化，在少量含有氧的氮气气氛中进行。另外，作为第1微粉末的原料使用的烧结体也是使用通过与第2微粉末同样的制法制作的微粉末而形成的。利用气流粉碎机的粉碎工序公开于日本特开2002 - 33206号公报和美国专利申请No.09 / 851 、423号中。\n\n【0053】\n\n将第1微粉末和第2微粉末的组成示于表2 。需要说明的是，第一微粉末的组成表示用盘式粉碎机粉碎后的分析值，在试样No.1 ～ 5的全部测定误差范围内具有大致相同的组成。表2中的数值为质量％ ，表中未记载的余量为Fe和不可避免的杂质。\n\n【0054】\n\n使用相对于第2微粉末混合5质量％的试样No.1 ～ 5的第1微粉末而得到的混合粉末，制作烧结体。另外，仅使用第2微粉末来制作烧结体（试样No.6）。\n\n【0055】\n\n冲压成形工序以后的工艺在以下的条件下执行。\n\n【0056】\n\n对上述的混合粉末（试样No.1 ～ 5）和第二微粉末（试样No.6）进行冲压成形（冲压压力0.8 ton / cm2（7.84×104kPa）、取向磁场0.96 MA / m（1.2 T）），由此得到成形体（纵40mm ×横30mm ×高20mm）。另外，取向磁场的方向是与压缩方向垂直的方向。将该成形体在减压Ar氛围中进行\n\n在环境中以900 ℃保持1小时进行脱氢处理后，在1050 ℃下烧结4小时。对得到的烧结体在500 ℃实施1小时的时效处理后，加工成5.4 mm × 12mm × 12mm的试验片。使用B - H示踪器来评价得到的烧结磁铁的磁特性。将分别得到的烧结磁铁（烧结体）的密度和磁特性示于表1 。\n\n【0057】\n\n由表1的结果可知，当供于氢化粉碎的烧结体的块的质量超过50g时，磁特性（矫顽力）降低。进而，若烧结体的块的质量超过70g ，则烧结体密度也降低。认为该烧结体密度和磁特性的降低混入微粉碎粉中本来不应该混合的粗粉末，其结果，烧结性降低，并且生成粗大的晶粒。与此相对，烧结体的块的质量为50g以下时，得到了与仅使用第2微粉末的情况大致同等的磁特性。进而，若使用25g以下的块，则得到与仅使用第2微粉末的情况实质上相同的磁特性。因此，供于氢化粉碎的烧结体的块的质量优选为50g以下，更优选为25g以下。即，若烧结体的块的质量为50g以下，则在氢化粉碎工序中被氢化粉碎至烧结体的中心附近，能够防止在其后的微粉碎工序（例如，使用喷射磨机）中微粉末中残留较硬的粗粉末。需要说明的是，也可以设置除去微粉碎工序后残存的粗粉末的工序。通常，烧结体以质量基准含有3500ppm ～ 6500ppm的氧。\n\n【0058】\n\n进而，烧结体的晶粒（主相）的大小优选为20 μ m以下。若晶粒的大小超过20 μ m ，则会产生喷射磨机的粉碎性降低的问题。\n\n【0059】\n\n将使用第1微粉末的配合量为5质量％的混合粉的情况下的结果示于表1 ，将对其他配合量进行研究的结果示于表3 。作为第一微粉末，使用与表1的试样No.5相同的粉末。由表3可知，如果第1微粉末的配合量超过15质量％ ，则烧结密度和磁特性降低，相对于此，如果为10质量％以下，则得到了与仅使用第2微粉末制作的情况同等的磁特性。\n\n【0060】\n\n【表1】\n\n\n\n【0061】\n\n【表2】\n\n\n\n【0062】\n\n【表3】\n\n\n\n【0063】\n\n【发明效果】\n\n根据本发明，提供能够比以往更高效地将稀土合金烧结体作为原料进行再利用的稀土合金烧结体的制造方法。在本发明的稀土类合金烧结体的制造方法中，由于不需要为了利用由稀土类合金烧结体制作的再生原料粉末（第一微粉末）而制作特别组成的稀土合金，因此能够在不使现存的制造工艺繁杂的情况下容易地执行。');
INSERT INTO `os_patent_instruction_text` VALUES (12930, 22759, 'BACKGROUND OF THE INVENTION\n\n[0001]1. Field of the Invention\n\n[0002]The present invention relates to a method of making a sintered body for a rare earth magnet, and more particularly, the present invention relates to a method of making a sintered body for use in, for example, an R—Fe—B type magnet.\n\n[0003]2. Description of the Related Art\n\n[0004]A rare earth alloy sintered magnet (permanent magnet) is normally produced by compacting a powder of a rare earth alloy, sintering the resultant compact and then subjecting the sintered body to an aging treatment. To be a sintered magnet, the sintered body may be magnetized at an arbitrary time after having been subjected to the aging treatment. It should be noted that the “rare earth alloy sintered body” used herein means either a sintered body to be magnetized or a sintered body that has already been magnetized (i.e., a sintered magnet) according to the context.\n\n[0005]Permanent magnets currently used extensively in various applications include a samarium-cobalt (Sm—Co) type magnet and a neodymium-iron-boron (Nd—Fe—B) type magnet. Among other things, an R—Fe—B type magnet (where R is at least one element selected from the rare earth elements including yttrium (Y) and is typically neodymium (Nd), Fe is iron and B is boron) is used more and more often in various types of electronic appliances. This is because an R—Fe—B type magnet exhibits a maximum energy product (BH)max that is higher than any of various other types of magnets and yet, the R—Fe—B type magnet is relatively inexpensive.\n\n[0006]An R—Fe—B type sintered magnet includes a main phase consisting essentially of a tetragonal R2Fe14B compound, an R-rich phase including Nd, for example, and a B-rich phase. In an R—Fe—B type sintered magnet, a portion of Fe may be replaced with a transition metal element such as Co or Ni and a portion of B may be replaced with C. An R—Fe—B type sintered magnet, to which various preferred embodiments of the present invention are applicable, is described in U.S. Pat. Nos. 4,770,723 and 4,792,368, for example.\n\n[0007]In the prior art, an R—Fe—B type alloy has been prepared as a material for such a magnet by an ingot casting process. In an ingot casting process, normally, rare earth metal, electrolytic iron and ferroboron alloy as respective start materials are melted by an induction heating process, and then the melt obtained in this manner is cooled relatively slowly in a casting mold, thereby preparing an alloy ingot.\n\n[0008]Recently, a rapid quenching process such as a strip casting process or a centrifugal casting process has attracted much attention in the art. In a rapid quenching process, a molten alloy is brought into contact with, and relatively rapidly cooled and solidified by, the outer or inner surface of a single chill roller or a twin chill roller, a rotating chill disk or a rotating cylindrical casting mold, thereby making a rapidly solidified alloy, which is thinner than an alloy ingot, from the molten alloy. The rapidly solidified alloy prepared in this manner will be herein referred to as an “alloy flake”. The alloy flake produced by such a rapid quenching process normally has a thickness of about 0.03 mm to about 10 mm. According to the rapid quenching process, the molten alloy starts to be solidified from a surface thereof that has been in contact with the surface of the chill roller. That surface of the molten alloy will be herein referred to as a “roller contact surface”. Thus, in the rapid quenching process, columnar crystals grow in the thickness direction from the roller contact surface. As a result, the rapidly solidified alloy, made by a strip casting process or any other rapid quenching process, has a structure including an R2Fe14B crystalline phase and an R-rich phase. The R2Fe14B crystalline phase usually has a minor-axis size of about 0.1 μm to about 100 μm and a major-axis size of about 5 μm to about 500 μm. On the other hand, the R-rich phase, which is a non-magnetic phase including a rare earth element R at a relatively high concentration, is dispersed in the grain boundary between the R2Fe14B crystalline phases.\n\n[0009]Compared to an alloy made by the conventional ingot casting process or die casting process (such an alloy will be herein referred to as an “ingot alloy”), the rapidly solidified alloy has been quenched and solidified in a shorter time (i.e., at a quench rate of about 102° C./sec to about 104° C./sec). Accordingly, the rapidly solidified alloy has a finer structure and a smaller average crystal grain size. In addition, in the rapidly solidified alloy, the grain boundary thereof has a greater area and the R-rich phase is dispersed broadly and thinly in the grain boundary. Thus, the rapidly solidified alloy also excels in the dispersiveness of the R-rich phase. Because the rapidly solidified alloy has the above-described advantageous features, a magnet with excellent magnetic properties can be made from the rapidly solidified alloy.\n\n[0010]An alternative alloy preparation method called “Ca reduction process (or reduction/diffusion process)” is also known in the art. This process includes the processing and manufacturing steps of: adding metal calcium (Ca) and calcium chloride (CaCl) to either the mixture of at least one rare earth oxide, iron powder, pure boron powder and at least one of ferroboron powder and boron oxide at a predetermined ratio or a mixture including an alloy powder or mixed oxide of these constituent elements at a predetermined ratio; subjecting the resultant mixture to a reduction/diffusion treatment within an inert atmosphere; diluting the reactant obtained to make a slurry; and then treating the slurry with water. In this manner, a solid of an R—Fe—B type alloy can be obtained.\n\n[0011]It should be noted that any small block of a solid alloy will be herein referred to as an “alloy block”. The “alloy block” may be any of various forms of solid alloys that include not only solidified alloys obtained by cooling a melt of a material alloy either slowly or rapidly (e.g., an alloy ingot prepared by the conventional ingot casting process or an alloy flake prepared by a quenching process such as a strip casting process) but also a solid alloy obtained by the Ca reduction process.\n\n[0012]An alloy powder to be compacted is obtained by performing the processing steps of: coarsely pulverizing an alloy block in any of these forms by a hydrogen pulverization process, for example, and/or any of various mechanical milling processes (e.g., using a feather mill, power mill or disk mill); and finely pulverizing the resultant coarse powder (with a mean particle size of about 10 μm to about 500 μm) by a dry milling process using a jet mill, for example. The alloy powder to be compacted preferably has a mean particle size of about 1.5 μm to about 7 μm to achieve sufficient magnetic properties. It should be noted that the “mean particle size” of a powder herein refers to a mass median diameter (MMD) unless stated otherwise. The coarse powder may also be finely pulverized by using a ball mill or attritor.\n\n[0013]A rare earth alloy powder is easily oxidizable, which is disadvantageous. A method of forming a thin oxide film on the surface of a rare earth alloy powder to avoid this problem was disclosed in Japanese Patent Gazette for Opposition No. 6-6728, which was originally filed by Sumitomo Special Metals Co., Ltd. on Jul. 24, 1986. According to another known method, the surface of a rare earth alloy powder may also be coated with a lubricant for that purpose. It should be noted that a rare earth alloy powder with no oxide film or lubricant coating thereon, a rare earth alloy powder covered with an oxide film and a rare earth alloy powder coated with a lubricant will all be referred to as a “rare earth alloy powder” collectively for the sake of simplicity. However, when the “composition of a rare earth alloy powder” is in question, the composition is that of the rare earth alloy powder itself, not the combination of the powder and the oxide film or lubricant coating.\n\n[0014]Generally speaking, the material cost of the rare earth sintered magnet is relatively high. This is also true of an R—Fe—B type magnet including a lot of Fe as an inexpensive material. Thus, to cut down the material cost of the rare earth sintered magnet and not to waste valuable natural resources, methods of recycling defective rare earth alloy sintered bodies without remelting the sintered bodies have been researched and developed recently.\n\n[0015]For example, Japanese Patent Publication No. 2746818 discloses a method of recycling a powder obtained by pulverizing the scrap of an Nd—Fe—B type alloy for a sintered magnet (which powder will be herein referred to as a “scrap powder”). In this method, the scrap powder of the Nd—Fe—B type alloy is mixed with a rare earth alloy powder (which is called “alloy B” in Japanese Patent Publication No. 2746818) to compensate for the oxidized portions of the material alloy and thereby improve the sinterability of the scrap powder.\n\n[0016]Another method of recycling a scrap powder of an R—Fe—B type magnet is disclosed in Japanese Laid-Open Publication No. 11-329811. In that alternative method, an alloy powder, including an Nd2Fe14B phase as its main phase, is prepared by subjecting the scrap powder of the R—Fe—B type magnet to acid cleaning and Ca reduction processes, for example, and then mixed with a composition controlling alloy powder to improve the sinterability thereof.\n\n[0017]According to these conventional recycling methods, however, an alloy powder, having a composition that is essentially different from that of the alloy powder as a material for the intended rare earth alloy sintered body, should be prepared. That is to say, since the “alloy B” powder or the composition controlling alloy powder needs to be prepared, the overall manufacturing process is adversely complicated. In addition, it is difficult to make a sintered body for a rare earth magnet from the alloy B powder or the composition controlling alloy powder alone. Also, even if a magnet could be made from such a powder, the magnetic properties of that magnet would be significantly inferior to the desired magnetic properties.\n\nSUMMARY OF THE INVENTION\n\n[0018]In order to overcome the problems described above, preferred embodiments of the present invention provide a method of making a rare earth alloy sintered body by recycling a defective rare earth alloy sintered body more efficiently.\n\n[0019]A preferred embodiment of the present invention provides a method of making a sintered body for a rare earth magnet. The method preferably includes the steps of (a) preparing a first coarse powder by coarsely pulverizing a rare earth alloy sintered body by a hydrogen pulverization process, (b) preparing a first fine powder by finely pulverizing the first coarse powder, (c) preparing a second fine powder by pulverizing an alloy block of a rare earth alloy material and (d) sintering a mixed powder including the first and second fine powders. Each of the first and second fine powders preferably includes a main phase having a composition represented by the general formula: (LR1-xHRx)2T14A, where T is either Fe alone or a mixture of Fe and at least one transition metal element other than Fe; A is either boron alone or a mixture of boron and carbon; LR is at least one light rare earth element; HR is at least one heavy rare earth element; and 0≦x[0020]In one preferred embodiment of the present invention, the steps (b) and (c) preferably respectively include the steps of preparing the first and second fine powders each including about 25 mass % to about 40 mass % of rare earth element(s) R (where R=LR1-xHRx) and about 0.6 mass % to about 1.6 mass % of A. The balance of the first or second fine powder, other than R and A, preferably includes T, a very small amount of additive(s) and inevitably contained impurities. The very small amount of additive(s) is preferably at least one element selected from the group consisting of Al, Cu, Ga, Cr, Mo, V, Nb and Mn. The total amount of the additive(s) is preferably about 1 mass % or less. The resultant sintered body for a rare earth magnet preferably includes the rare earth element(s) R at about 34 mass % or less, more preferably at about 33 mass % or less.\n\n[0021]In another preferred embodiment, the steps (a) and (c) preferably include the step of preparing the rare earth alloy sintered body and the step of preparing the alloy block of the rare earth alloy material, respectively. Each of the rare earth alloy sintered body and the alloy block of the rare earth alloy material preferably includes a compound represented by (LR1-xHRx)2T14A at about 80 vol % or more.\n\n[0022]In still another preferred embodiment, the method preferably further includes the step of making the mixed powder in which the mass of the first fine powder corresponds to about 0.1% to about 10% of the mass of the second fine powder.\n\n[0023]In this particular preferred embodiment, the steps (b) and (c) preferably respectively include the steps of preparing the first and second fine powders such that a mole fraction x in the formula representing the main phase of the first fine powder is different from a mole fraction x in the formula representing the main phase of the second fine powder. And the method preferably further includes the step of making the mixed powder in which the mass of the first fine powder corresponds to less than about 5% of the mass of the second fine powder. To achieve sufficient magnetic properties, the mass of the first fine powder more preferably corresponds to less than about 3% of the mass of the second fine powder.\n\n[0024]In still another preferred embodiment, the step (a) preferably includes the steps of crushing the rare earth alloy sintered body into a plurality of blocks, each having a mass of about 50 g or less and coarsely pulverizing each of the plurality of blocks by the hydrogen pulverization process.\n\n[0025]In yet another preferred embodiment, the step (c) preferably includes the steps of preparing a second coarse powder by coarsely pulverizing the alloy block of the rare earth alloy material and producing the second fine powder by finely pulverizing the second coarse powder. And the method preferably further includes the steps of making a mixed powder of the first and second coarse powders, and producing the mixed powder of the first and second fine powders by finely pulverizing the mixed powder of the first and second coarse powders.\n\n[0026]Alternatively, the step (c) may include the steps of preparing a second coarse powder by coarsely pulverizing the alloy block of the rare earth alloy material and producing the second fine powder by finely pulverizing the second coarse powder. The method may further include the steps of subjecting a mixture of the alloy block of the rare earth alloy material and the rare earth alloy sintered body to the hydrogen pulverization process to make a mixed coarse powder of the first and second coarse powders and producing the mixed powder of the first and second fine powders by finely pulverizing the mixed coarse powder.\n\n[0027]In yet another preferred embodiment, the step (c) preferably includes the step of preparing the alloy block by solidifying a melt of the rare earth alloy material by a quenching process.\n\n[0028]In yet another preferred embodiment, the step (a) preferably includes the step of coarsely pulverizing a defective sintered body for a rare earth magnet as the rare earth alloy sintered body.\n\n[0029]Other features, elements, processes, steps, characteristics and advantages of the present invention will become more apparent from the following detailed description of preferred embodiments of the present invention.\n\nDETAILED DESCRIPTION OF PREFERRED EMBODIMENTS\n\n[0030]Hereinafter, preferred embodiments of the present invention will be described. The following specific preferred embodiments of the present invention relate to a method of making a sintered body for a rare earth magnet.\n\n[0031]A method of making a sintered body for a rare earth magnet according to a preferred embodiment of the present invention preferably includes the steps of: (a) preparing a first coarse powder by coarsely pulverizing a rare earth alloy sintered body by a hydrogen pulverization process; (b) preparing a first fine powder by finely pulverizing the first coarse powder; (c) preparing a second fine powder by pulverizing an alloy block that has been obtained by cooling a melt of a rare earth alloy material; and (d) sintering a mixed powder including the first and second fine powders. Each of the first and second fine powders includes a main phase having a composition represented by (LR1-xHRx)2T14A.\n\n[0032]The composition of a main phase of an R—Fe—B type alloy sintered body is herein represented by the general formula (LR1-xHRx)2T14A, where T is either Fe alone or a mixture of Fe and at least one transition metal element other than Fe, A is either boron alone or a mixture of boron and carbon, LR is at least one light rare earth element, and HR is at least one heavy rare earth element. LR and HR will be herein labeled as “R” collectively.\n\n[0033]The light rare earth element LR is preferably selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu and Gd and preferably includes at least one of Nd and Pr. The heavy rare earth element HR is preferably selected from the group consisting of Y, Tb, Dy, Ho, Er, Tm, Yb and Lu and preferably includes at least one element selected from the group consisting of Dy, Ho and Tb. The mole fraction x, indicating, as an atomic ratio, how much of the light rare earth element LR is replaced with the heavy rare earth element HR, is preferably equal to or greater than about zero and less than about one. That is to say, the main phase of the R—Fe—B type alloy sintered body may include no heavy rare earth element HR.\n\n[0034]Examples of the transition metal elements include Ti, V, Cr, Mn, Fe, Co and Ni. T is preferably either Fe alone or Fe that has been partially replaced with at least one of Ni and Co.\n\n[0035]To realize a sintered magnet exhibiting excellent magnetic properties, each of the first and second fine powders preferably includes about 25 mass % to about 40 mass % of rare earth element(s) R (where R=LR1-xHRx) and about 0.6 mass % to about 1.6 mass % of A. The balance of the first or second fine powder, other than R and A, includes T, a very small amount of additive(s) and inevitably contained impurities. The very small amount of additive(s) is preferably at least one element selected from the group consisting of Al, Cu, Ga, Cr, Mo, V, Nb and Mn. The total amount of the additive(s) is preferably about 1 mass % or less. Each of the rare earth alloy sintered body and the alloy block of the rare earth alloy material preferably includes a compound represented by (LR1-xHRx)2T14A at about 80 vol % or more. It should be noted that the alloy block, obtained by cooling and solidifying a melt of the rare earth alloy material, normally has an oxygen content of about 1,000 ppm or less on a mass basis. This is because the alloy block has not gone through the sintering process yet.\n\n[0036]In the method of making a sintered body for a rare earth magnet according to this preferred embodiment of the present invention, the second fine powder is used to make the sintered body for a rare earth magnet after having been mixed with the first fine powder that has been made from the rare earth alloy sintered body. Unlike the prior art, the second fine powder does not have to have a special composition and can be used to make the sintered body for a rare earth magnet by itself.\n\n[0037]In this case, the second fine powder may be either the same as, or different from, a fine powder that was used to make the rare earth alloy sintered body to be a material for the first fine powder. The reason is as follows. Generally speaking, the alloy composition of a rare earth alloy sintered body is adjusted to various applications. Accordingly, in a manufacturing factory, rare earth alloy sintered bodies of various grades are produced. For example, by changing the mole fraction x in the general formula described above, a number of different types of rare earth alloy sintered bodies, exhibiting mutually different remanences Br or coercivities iHc, can be produced. For that purpose, alloy blocks, having mutually different x mole fractions associated with those grades, are prepared in the manufacturing factory to obtain a rare earth alloy sintered body of the desired grade. Thus, there are alloy blocks and sintered bodies of various grades (i.e., good and bad products) in the manufacturing factory. In this preferred embodiment, the materials of the first and second fine powders may be either of the same grade or of mutually different grades. In any case, to achieve good enough magnetic properties, falling within the desired ranges, for the rare earth sintered magnet in the end, the compositions and the mixing ratio of the first and second fine powders need to be controlled appropriately.\n\n[0038]It should be noted, however, that the composition of a sintered body is usually somewhat different from that of its fine material powder. This is because the constituents (the rare earth element(s) thereof, in particular) of the material powder are oxidized during the sintering process, for example. The first fine powder, obtained by pulverizing the sintered body, tends to exhibit low liquid phase sinterability because the rare earth elements thereof have been oxidized and consumed. Thus, in the conventional recycling methods described above, the alloy B (as described in Japanese Patent Publication No. 2746818) or the composition controlling alloy powder (as described in Japanese Laid-Open Publication No. 11-329811) is mixed to compensate for the low sinterability of that recycled material obtained by pulverizing the sintered body.\n\n[0039]In contrast, according to preferred embodiments of the present invention, if the recycled material exhibits low sinterability, then the mass percentage (i.e., the mixing ratio) of the first fine powder relative to the second fine powder is reduced. More specifically, in the mixed powder, the mass of the first fine powder preferably corresponds to about 0.1% to about 10% of that of the second fine powder. The reason is as follows. If the mass percentage of the first fine powder (i.e., fine powder of the recycled material) relative to the second fine powder (i.e., fine powder of a brand new material) is equal to about 10 mass % or less, then the sinterability (e.g., the sintered density) of the mixed powder will be high enough to produce a sintered magnet with practical magnetic properties. However, once the mass percentage of the first fine powder relative to the second fine powder exceeds about 10 mass %, the sinterability of the mixed powder declines, thus decreasing the sintered density and increasing the oxygen content of the sintered body. As a result, the remanence Br or coercivity iHc of the sintered body may decrease. On the other hand, if the mass percentage of the first fine powder relative to the second fine powder is too low, then the recycling will not be so advantageous particularly in terms of the cost effectiveness. For that reason, the mass percentage of the first fine powder relative to the second fine powder is preferably at least equal to or greater than about 0.1 mass %.\n\n[0040]If the mole fraction x in the main phase of the first fine powder as represented by the general formula is different from that in the main phase of the second fine powder as also represented by the same formula (i.e., if the first fine powder is obtained from a sintered body of a different grade), then the mass percentage of the first fine powder relative to the second fine powder is preferably less than about 5 mass %, more preferably less than about 3 mass % to achieve sufficiently good magnetic properties. It should be noted that the first and/or second fine powder(s) may be made up of a plurality of powders with mutually different compositions. In that case, before those powders with different compositions are mixed either as coarse powders or as fine powders, the compositions of those powders are preferably analyzed and the mixing ratio thereof is preferably determined based on the result of the composition analysis. The resultant sintered body for a rare earth magnet preferably includes the rare earth element(s) R at about 34 mass % or less, more preferably at about 33 mass % or less.\n\n[0041]Next, it will be described specifically how to prepare the first fine powder from the rare earth alloy sintered body in the method of making a sintered body for a rare earth magnet according to this preferred embodiment of the present invention.\n\n[0042]To obtain the first fine powder from the rare earth alloy sintered body, first, the rare earth alloy sintered body is coarsely pulverized. Normally, when a fine powder is obtained from an alloy block or flake, the alloy block or flake is also coarsely pulverized once and then finely pulverized. This is done to obtain a fine powder having a desired particle size distribution efficiently because a rare earth alloy powder often has low compactability. As the methods of coarse pulverization, a hydrogen pulverization process or a mechanical milling process is usually used. In the manufacturing process of this preferred embodiment, the sintered body is coarsely pulverized by a hydrogen pulverization process. In the hydrogen pulverization process, the rare earth element is hydrogenated, and therefore, will not be oxidized in the subsequent manufacturing and processing steps so much as other mechanical milling processes. As a result, even though the rare earth alloy sintered body is recycled as a magnet material, the oxygen content of the resultant powder will not increase so much. Also, in the sintering process, the hydrogenated rare earth element will be dehydrogenated to turn into a metal and enter a liquid phase. As a result, the sinterability thereof also increases. Furthermore, according to the hydrogen pulverization process, the productivity of the coarse and fine pulverization processes is several times as high as that of the mechanical milling process. The hydrogen pulverization process is preferably carried out by exposing the rare earth alloy sintered body to a hydrogen gas atmosphere at a pressure of about 1 MPa or less for about 0.5 hour to about 10 hours.\n\n[0043]The hydrogen pulverization process is a pulverization technique that utilizes the phenomenon that very small cracks are created in the rare earth alloy material (typically an alloy block) due to the volume expansion of the alloy material being exposed to a hydrogen gas atmosphere. This expansion is caused by the hydrogenation of the rare earth element in the alloy material. Accordingly, it has been believed that it is difficult to successfully apply this technique industrially to pulverizing a sintered magnet including a rare earth element that has already been partially oxidized. However, the present inventors discovered and confirmed via experiments that this hydrogen pulverization technique is also applicable sufficiently effectively to coarsely pulverizing such a sintered body. Also, to coarsely pulverize the sintered body more efficiently, the sintered body (with a specific gravity of about 7.5 g/cm3, for example), to be subjected to the hydrogen pulverization process is preferably a block having a mass of about 50 g or less. This is because if each block of the sintered body is large enough to have a mass of greater than about 50 g (e.g., having approximate dimensions of 25 mm×24 mm×11 mm or more), then the sintered body may not be coarsely pulverized completely but unpulverized portions may be left at the center of the sintered body. Thus, to coarsely pulverize the sintered body completely, each block to be subjected to the hydrogen pulverization process preferably has a mass of about 25 g or less. If the defective sintered body to be pulverized has a weight of greater than about 50 g, then that sintered body is preferably crushed mechanically with a jaw crusher, for example.\n\n[0044]The coarse powder (i.e., the first coarse powder) obtained by the hydrogen pulverization process is further milled mechanically if necessary using a disk mill, for example. Thereafter, the first coarse powder is finely pulverized by a dry milling technique using a jet mill. The resultant fine powder (i.e., the first fine powder) preferably has a mean particle size of about 1.5 μm to about 7 μm. When such a dry milling process is carried out using a jet mill, fine powder particles, containing a lot of oxygen, are preferably removed partially.\n\n[0045]The processing step of finely pulverizing the first coarse powder with a jet mill and the processing step of obtaining the second fine powder from a brand new material may be carried out simultaneously using the same machine. As described above, the second fine powder is obtained by performing the processing steps of coarsely pulverizing an alloy block having a predetermined composition by a hydrogen pulverization process, for example, further milling mechanically the resultant coarse powder (i.e., the second coarse powder) using a disk mill, for example, if necessary, and then finely pulverizing the second coarse powder by a dry milling technique using a jet mill. The second fine powder also preferably has a mean particle size of about 1.5 μm to about 7 μm. Accordingly, by dry-mixing the first and second coarse powders using a rocking mixer, for example, and then finely pulverizing the resultant mixture of the coarse powders using the jet mill, a mixed powder of the first and second fine powders can be obtained. It should be noted that in the dry-mixing and finely pulverizing processing steps, a lubricant may be added to the powders when needed so that the surface of the first and second fine powders is coated with the lubricant.\n\n[0046]It is naturally possible to obtain a mixture of the first and second coarse powders by the same hydrogen pulverization process and then obtain the mixture of the first and second fine powders by the same dry milling process. That is to say, the material of the first coarse powder (e.g., a block of a sintered body) and the material of the second coarse powder (e.g., a block of a strip cast alloy) may be mixed with each other in advance, and then the mixture may be subjected to the hydrogen pulverization process to obtain the mixture of the first and second coarse powders. In any case, to minimize the unwanted oxidation, these materials are preferably mixed with each other before pulverized into the first and second fine powders.\n\n[0047]The material (i.e., the alloy block having the predetermined composition) of the second fine powder is preferably prepared by a quenching process. This is because if the second fine powder is obtained from a rapidly solidified alloy block (or flake), then not only the magnetic properties but also the sinterability of the second fine powder are excellent. Accordingly, the second fine powder can effectively compensate for the low sinterability of the first fine powder. The second fine powder, obtained from a rapidly solidified alloy block, exhibits superior sinterability probably because an R-rich phase should be dispersed on the surface of the second fine powder more thinly and broadly than a fine powder obtained from an ingot alloy that had been cast into a mold.\n\n[0048]Also, the first and second fine powders preferably have low oxygen contents. This is because if the oxygen contents thereof are too high, the desired magnetic properties may be unachievable even though the mixing ratio of the first and second fine powders falls within the above-specified range. Specifically, the first fine powder preferably has an oxygen content of about 1,500 ppm to about 10,000 ppm while the second fine powder preferably has an oxygen content of about 1,500 ppm to about 7,000 ppm. However, even if the oxygen content of the first fine powder exceeds this range, sufficiently good magnetic properties may be achieved by selecting a material having a low oxygen content as the second fine powder. Anyway, the mixing ratio of the first fine powder to the second fine powder is preferably determined in consideration of the desired magnetic properties.\n\n[0049]Once the intended mixed powder is obtained, the subsequent manufacturing and processing steps may be performed by known', '发明背景\n\n[0001]1.发明领域\n\n[0002]本发明涉及制备稀土磁体的烧结体的方法,更具体地,本发明涉及制备烧结体用于例如R-Fe-B型磁体的方法。\n\n[0003]2.相关技术的描述\n\n[0004]稀土合金烧结磁体(永磁体)通常通过压实稀土合金的粉末,烧结所得紧凑,然后使烧结体进行老化处理。作为烧结磁体,烧结体可以在经受老化处理后在任意时间下磁化。应该注意的是,本文使用的“稀土合金烧结体”是指待磁化的烧结体或已经根据上下文被磁化(即烧结磁体)的烧结体。\n\n[0005]目前在各种应用中广泛使用的永磁体包括钐 - 钴(SM-CO)型磁铁和钕 - 铁 - 硼(ND-Fe-B)型磁体。在其他情况下,R-Fe-B型磁体(其中R是选自稀土元素的至少一个元素,包括钇(Y),通常是钕(Nd),Fe是铁,B是硼)使用更多更常见于各种类型的电子设备。这是因为R-Fe-B型磁铁表现出最大的能量产品(BH)max 这高于各种其他类型的磁体,然而,R-Fe-B型磁体相对便宜。\n\n[0006]R-Fe-B型烧结磁体包括主要相位,基本上由四方R组成2Fe.14B化合物,富含R的相,包括Nd,例如富含B的相。在R-Fe-B型烧结磁体中,可以用诸如CO或Ni的过渡金属元素代替Fe的一部分,并且B的一部分可以用C. R-Fe-B型烧结磁体代替适用于本发明的各种优选实施例,在美国专利No.例如,4,770,723和4,792,368。\n\n[0007]在现有技术中,通过铸锭铸造方法制备R-Fe-B型合金作为这种磁体的材料。在铸锭铸造工艺中,通常,稀土金属,电解铁和硼酸合金作为各自的起始材料被感应加热过程熔化,然后以这种方式获得的熔体在铸模中相对缓慢地冷却,从而制备合金锭。\n\n[0008]最近,诸如条带铸造工艺或离心铸造过程的快速淬火过程引起了本领域的许多关注。在快速淬火过程中,通过单个冷却辊或双冷却辊,旋转冷却盘或旋转圆柱形铸造模具,熔融合金与单个冷却辊或双冷却辊的外表面接触和相对迅速冷却和固化。由此,从熔融合金中制备比合金锭更薄的凝固合金。以这种方式制备的快速固化合金将在此称为“合金薄片”。通过这种快速淬火过程产生的合金薄片通常具有约0.03mm至约10mm的厚度。根据快速淬火过程,熔融合金开始从已经与冷却辊的表面接触的表面固化。熔融合金的表面将被称为“辊接触表面”。因此,在快速淬火过程中,柱状晶体从辊子接触表面沿厚度方向生长。结果,通过条带铸造工艺或任何其他快速淬火过程制造的快速凝固的合金具有包括r的结构2Fe.14B结晶相和富含R相。 r.2Fe.14B结晶相通常具有约0.1μm至约100μm的次轴尺寸,并且主轴尺寸为约5μm至约500μm。另一方面,富含R的富型相,其是包括稀土元素R以相对高浓度的非磁性相,分散在R之间的晶界中2Fe.14B结晶相。\n\n[0009]与传统铸锭铸造工艺或压铸过程制成的合金相比(这种合金在本文中称为“铸造合金”),在较短的时间内淬火并凝固了快速固化的合金(即,淬火率约为102°C./sec到大约104°C./sec)。因此,快速固化的合金具有更细的结构和较小的平均晶粒尺寸。另外,在快速凝固的合金中,其晶界具有更大的区域,并且R-富相位在晶界中宽且薄薄地分散。因此,快速凝固的合金也擅长R-富相的分散性。因为快速凝固的合金具有上述有利特征,所以可以由具有优异磁性的磁体由快速凝固的合金制成。\n\n[0010]替代合金制备方法,称为“Ca还原过程(或还原/扩散过程)”在本领域中也已知。该方法包括:将金属钙(Ca)和氯化钙(CaCl)加入至少一种稀土氧化物,铁粉,纯硼粉末和氧化硼至少一种的混合物中的加工和制造步骤以预定的比例或包含具有预定比例的包括合金粉末或这些组成元素的混合氧化物的预定比例。使所得混合物在惰性气氛中进行减少/扩散处理;稀释得到的反应物制成浆液;然后用水处理浆料。以这种方式,可以获得R-Fe-B型合金的固体。\n\n[0011]应注意,任何小块的固体合金都将被称为“合金块”。 “合金块”可以是各种形式的固体合金中的任何一种,其不仅包括通过冷却或迅速地冷却材料合金(例如,由常规铸锭铸造工艺或合金薄片制备的合金铸锭而获得的凝固合金由淬火过程制备,例如条带铸造过程),而且通过Ca还原过程获得的固体合金。\n\n[0012]通过进行处理步骤来获得待压制的合金粉末:例如通过氢粉碎过程(例如,使用羽毛磨)(例如,使用羽毛磨)中的任何一种粗粉碎,电厂或盘式磨机);通过使用喷射磨机,通过使用喷射磨机将所得粗粉末(平均粒度为约10μm至约500μm的平均粒径为约10μm至约500μm)。要压实的合金粉末优选具有约1.5μm至约7μm的平均粒度,以获得足够的磁性。应当注意,本文粉末的“平均粒子尺寸”是指质量中值直径(MMD),除非另有说明。粗粉末也可以通过使用球磨机或磨料来细化。\n\n[0013]稀土合金粉末易于氧化,这是不利的。在稀土合金粉末表面上形成薄氧化物膜以避免该问题,用于反对6-6728号,最初由Jul上的Sumitomo特殊金属有限公司提交。根据另一种已知方法,稀土合金粉末的表面也可用润滑剂涂覆有此目的。应当注意,稀土合金粉末在没有氧化物膜或润滑剂涂层上,覆盖着涂有氧化膜的稀土合金粉末和涂覆有润滑剂的稀土合金粉末将所有都被称为“稀土合金” “为了简单起见,粉末是典型的。然而,当“稀土合金粉末的组成”是有问题的,组合物是稀土合金粉末本身的组合物,而不是粉末和氧化膜或润滑剂涂层的组合。\n\n[0014]一般而言,稀土烧结磁体的材料成本相对较高。这也是如此,包括大量Fe作为廉价材料的R-Fe-B型磁铁也是如此。因此,为了减少稀土烧结磁体的材料成本而不是浪费宝贵的自然资源,已经研究并最近研究过不重新切割烧结体的缺陷稀土合金烧结体的方法。\n\n[0015]例如,日本专利公开No.2746818公开了一种通过粉碎烧结磁体的Nd-Fe-B型合金的废料来再循环粉末的方法(本文将在本文中称为“废粉”)。在该方法中,Nd-Fe-B型合金的废粉与稀土合金粉末(其在日本专利公开No.2746818中的稀土合金粉末(其称为“合金B”)混合以补偿材料合金的氧化部分从而改善废粉的烧结性。\n\n[0016]在日本公开公开No.1-329811中公开了再循环R-Fe-B型磁体的废粉的另一种方法。在这种替代方法中,合金粉末,包括ND2Fe.14B相作为其主阶段,通过使R-Fe-B型磁体的废粉对酸洗和Ca还原过程进行,然后与组合物控制合金粉末混合以改善其烧结性。\n\n[0017]然而,根据这些常规的再循环方法,应制备具有基本上与合金粉末作为预期稀土合金烧结体的材料基本不同的合金粉末的合金粉末。也就是说,由于需要制备“合金B”粉末或组合物控制合金粉末,因此整体制造过程不利复杂。此外,难以单独从合金B粉末或组合物控制合金粉末制备稀土磁体的烧结体。而且,即使可以由这种粉末制成磁体,该磁铁的磁性将显着差不等于所需的磁性。\n\n发明概述\n\n[0018]为了克服上述问题,本发明的优选实施方案提供了通过更有效地再循环缺陷稀土合金烧结体制备稀土合金烧结体的方法。\n\n[0019]本发明的一个优选实施方案提供了制备烧结体的稀土磁体的方法。该方法优选包括通过氢粉碎过程粗粉碎稀土合金烧结体制备稀土合金烧结体,通过精细粉碎第一粗粉,(c)制备,制备第一细粉末,制备第一粗粉末的步骤。(b)制备通过粉碎稀土合金材料的合金块和(d)烧结混合粉末,包括第一和第二细粉末,是第二细粉末。第一和第二细粉末中的每一个优选包括具有由通式表示的组合物的主相:(LR1-x人力资源x)2T.14a,其中t是单独的Fe或Fe和Fe以外的至少一个过渡金属元素的混合物; A单独的硼或硼和碳的混合物; LR是至少一个轻稀土元素;人力资源是至少一个重稀土元素;和0≤x[0020]在本发明的一个优选实施方案中,步骤(b)和(c)优选分别包括制备第一和第二细粉末的步骤,每个步骤包括约25质量%至约40质量%的稀土元素r (其中r = lr1-x人力资源x)和A的约0.6质量%至约1.6质量%。除R和A之外的第一或第二细粉末的平衡,优选包括T,非常少量的添加剂和不可避免地含有杂质。非常少量的添加剂优选为选自Al,Cu,Ga,Cr,Mo,V,Nb和Mn的至少一种元素。添加剂的总量优选为约1质量%或更低。用于稀土磁体的所得烧结体优选地包括约34质量%以下的稀土元素R,更优选为约33质量%或更低。\n\n[0021]在另一个优选的实施方案中,步骤(a)和(c)优选包括分别制备稀土合金烧结体的步骤和制备稀土合金材料的合金块的步骤。稀土合金烧结体和稀土合金材料的合金块优选包括由(LR1-x人力资源x)2T.14一个大约80克拉%或更多。\n\n[0022]在又一个优选的实施方案中,该方法优选地还包括制备所述混合粉末的步骤,其中所述第一细粉末的质量对应于所述第二细粉末质量的约0.1%至约10%。\n\n[0023]在该特定优选的实施方案中,步骤(b)和(c)优选包括制备第一和第二细粉末的步骤,使得表示第一细粉末的主阶段的公式中的摩尔分数X不同于a摩尔分数X在表示第二细粉末的主相的配方中。该方法优选还包括制备所述混合粉末的步骤,其中所述第一细粉末的质量对应于所述第二细粉末的质量的小于约5%。为了获得足够的磁性,第一细粉末的质量更优选对应于第二细粉末质量的小于约3%。\n\n[0024]在又一个优选的实施方案中,步骤(a)优选地包括将稀土合金烧结体挤成多个块的步骤,每个块具有约50g或更小的质量,并且通过粗略地粉碎多个块中的每一个块氢粉碎过程。\n\n[0025]在又一个优选的实施方案中,步骤(c)优选包括通过粗地粉碎稀土合金材料的合金块并通过精细粉碎第二粗粉末制备第二细粉末的步骤制备第二粗粉末。该方法优选地还包括制备第一和第二粗粉末的混合粉末的步骤,并通过细化第一和第二粗粉末的混合粉末制备第一和第二细粉末的混合粉末。\n\n[0026]或者,步骤(c)可以包括通过粗地粉碎稀土合金材料的合金块并通过细细粉碎第二粗粉末制备第二细粉末的步骤制备第二粗粉末。该方法还可包括使稀土合金材料的合金块和稀土合金烧结体的合金块的混合物进行氢粉碎过程的步骤,以制备第一和第二粗粉末的混合粗粉末,并产生混合的粉末通过精细粉碎混合粗粉末的第一和第二细粉末的粉末。\n\n[0027]在又一个优选的实施方案中,步骤(c)优选包括通过通过淬火过程固化稀土合金材料的熔体来制备合金块的步骤。\n\n[0028]在又一个优选的实施方案中,步骤(a)优选包括作为稀土合金烧结体作为稀土磁体粗地粉碎缺陷烧结体的步骤。\n\n[0029]根据本发明优选实施例的以下详细描述,本发明的其他特征,元件,过程,步骤,特征和优点将变得更加明显。\n\n优选实施方案的详细描述\n\n[0030]在下文中,将描述本发明的优选实施例。本发明的以下具体优选实施方案涉及制备稀土磁体的烧结体的方法。\n\n[0031]根据本发明优选实施方案的制备烧结体的方法优选包括以下步骤:(a)通过通过氢粉碎过程粗粉碎稀土合金烧结体制备第一粗粉末; (b)通过精细粉碎第一粗粉制备第一细粉末; (c)通过粉碎通过冷却稀土合金材料的熔体而获得的合金块制备第二细粉末; (D)烧结混合粉末,包括第一和第二细粉末。第一和第二细粉末中的每一个包括具有由(LR的组合物)的主相1-x人力资源x)2T.14一种。\n\n[0032]R-Fe-B型合金烧结体的主相的组成在本文中由通式(LR)表示1-x人力资源x)2T.14A,其中T是单独的Fe或Fe的混合物和除Fe之外的至少一个过渡金属元素,A是硼单独的或硼和碳的混合物,LR是至少一个轻稀土元素,而HR是至少一个重稀土元素。 LR和HR将在此标记为“R”。\n\n[0033]光稀土元素LR优选选自La,Ce,Pr,Nd,PM,Sm,Eu和Gd,优选包括Nd和Pr中的至少一个。重稀土元素HR优选选自Y,Tb,Dy,HO,ER,Tm,Yb和Lu,并且优选包括选自Dy,Ho和Tb的至少一种元素。摩尔分数X,表示作为原子比,用重稀土元素HR代替多少光稀土元素LR,优选等于或大于约零且小于约1。也就是说,R-Fe-B型合金烧结体的主阶段可包括不含重质稀土元素HR。\n\n[0034]过渡金属元素的实例包括Ti,V,Cr,Mn,Fe,Co和Ni。 T优选为单独的Fe或已被Ni和Co.的至少一种部分替换的Fe。\n\n[0035]为了实现具有优异磁性的烧结磁体,第一和第二细粉末中的每一个优选包括约25质量%至约40质量%的稀土元素(S)R(其中R = LR1-x人力资源x)和A的约0.6质量%至约1.6质量%。除R和A之外的第一或第二细粉末的平衡包括T,非常少量的添加剂和不可避免地含有杂质。非常少量的添加剂优选为选自Al,Cu,Ga,Cr,Mo,V,Nb和Mn的至少一种元素。添加剂的总量优选为约1质量%或更低。稀土合金烧结体和稀土合金材料的合金块优选包括由(LR1-x人力资源x)2T.14一个大约80克拉%或更多。应当注意,通过冷却和固化稀土合金材料的熔体而获得的合金块通常具有约1,000ppm或更低的氧含量。这是因为合金块还没有通过烧结过程。\n\n[0036]在根据本发明的本优选实施方案的制备烧结体的烧结体的方法中,第二细粉末用于与第一细粉末混合后使烧结体用于稀土磁体。是由稀土合金烧结体制成的。与现有技术不同,第二细粉末不必具有特殊的组合物,并且可用于自身制成稀土磁体的烧结体。\n\n[0037]在这种情况下,第二细粉末可以与用于使稀土合金烧结体的细粉末的细粉相同或不同,以使稀土合金烧结体成为第一细粉末的材料。原因如下。一般而言,将稀土合金烧结体的合金组成调节到各种应用。因此,在制造工厂中,产生各种等级的稀土合金烧结体。例如,通过改变上述通式中的摩尔分数X,许多不同类型的稀土合金烧结体,展示相互不同的流动Br 或铸造IH.c,可以制作。为此目的,在制造工厂中制备具有与这些等级相关的相互不同的X摩尔级分的合金块,以获得所需等级的稀土合金烧结体。因此,在制造厂中有各种等级(即良好和坏产品)的合金块和烧结体。在该优选实施方案中,第一和第二细粉末的材料可以是相同的等级或相互不同的等级。在任何情况下,为了达到足够的磁性,落在所需范围内,对于稀土烧结磁体,最终的组合物和第一和第二细粉末的混合比率需要适当地控制。\n\n[0038]然而,应该注意的是,烧结体的组成通常与其精细材料粉末的组成有些不同。这是因为在烧结过程中,该成分(特别是其稀土元素,特别是其稀土元素)在烧结过程中被氧化。通过粉碎烧结体获得的第一细粉末倾向于表现出低液相烧结性,因为其稀土元素已被氧化和消耗。因此,在上述常规再循环方法中,合金B(如日本专利公开No.2746818中所述)或组合物控制合金粉末(如日本公开公开No.11-329811中所述)混合以补偿通过粉碎烧结体获得的再循环材料的低烧结性。\n\n[0039]相反,根据本发明的优选实施方案,如果再循环材料表现出低的顺序性,则减少了第一细粉末相对于第二细粉末的质量百分比(即混合比)。更具体地,在混合粉末中,第一细粉末的质量优选对应于第二细粉末的约0.1%至约10%。原因如下。如果第一细粉末的质量百分比(即再循环材料的细粉末)相对于第二细粉末(即,全新的新材料的细粉末)等于约10质量%或更低,则是烧结性(例如,混合粉末的烧结密度将足够高,以产生具有实际磁性的烧结磁体。然而,一旦相对于第二细粉末的第一细粉末的质量百分比超过约10质量%,则混合粉末的烧结性下降,从而降低烧结密度并增加烧结体的氧含量。结果,剩余br 或胁迫IH.c 烧结体可能会降低。另一方面,如果第一细粉末相对于第二细粉末的质量百分比太低,则在成本效益方面,再循环不会是如此有利的。因此,相对于第二细粉末的第一细粉末的质量百分比优选至少等于或大于约0.1质量%。\n\n[0040]如果由通式所示的第一细粉末的主相中的摩尔分数x不同于第二细粉末的主相中的相同配方(即,如果获得第一细粉末)从不同等级的烧结体中,然后相对于第二细粉末的第一细粉末的质量百分比优选小于约5质量%,更优选小于约3质量%,以达到足够良好的磁性。应注意,第一和/或第二细粉末可以由具有相互不同的组合物的多种粉末组成。在这种情况下,在将具有不同组合物的那些粉末作为粗粉末或作为细粉末混合之前,优选分析这些粉末的组合物,并且优选基于组成分析的结果确定其混合比。用于稀土磁体的所得烧结体优选地包括约34质量%以下的稀土元素R,更优选为约33质量%或更低。\n\n[0041]接下来,将具体描述根据本发明优选实施例的制备稀土磁体的烧结体的方法中如何从稀土合金烧结体中制备第一细粉末。\n\n[0042]为了从稀土合金烧结体中获得第一细粉末,首先,稀土合金烧结体粗粉碎。通常,当从合金块或薄片获得细粉末时,合金块或薄片也粗糙地粉碎一次,然后精细地粉碎。这样做是为了获得有效地具有所需粒度分布的细粉末,因为稀土合金粉末经常具有较低的紧凑性。作为粗粉化的方法,通常使用氢粉碎过程或机械研磨过程。在该优选实施方案的制造方法中,烧结体通过氢粉碎方法粗略地粉碎。在氢粉碎过程中,稀土元素氢化,因此,在随后的制造和加工步骤中不会被氧化,作为其他机械研磨过程。结果,即使稀土合金烧结体被再循环为磁体材料,所得粉末的氧含量也不会增加。而且,在烧结过程中,氢化稀土元素将脱氢以变成金属并进入液相。结果,其烧结性也增加。此外,根据氢粉碎过程,粗粉碎过程的生产率是机械研磨过程的几倍。优选通过将稀土合金烧结体暴露于约1MPa或更小的压力将稀土合金烧结体暴露于氢气气氛约0.5小时至约10小时来进行氢粉碎方法。\n\n[0043]氢粉碎过程是一种粉碎技术,其由于合金材料的体积膨胀暴露于氢气气氛而在稀土合金材料(通常是合金块)中产生非常小的裂缝的现象。这种膨胀是由合金材料中稀土元素的氢化引起的。因此,已经据信,难以在工业上成功地应用这种技术,以粉碎包括已经部分氧化的稀土元素的烧结磁体。然而,本发明人通过实验发现和确认,即该氢粉碎技术也适用于充分有效地粗地粉碎这种烧结体。而且,为了更有效地粗糙地粉碎烧结体,烧结体(具有约7.5g / cm的比重3例如)待进行氢粉碎过程的优选是具有约50g或更低的质量的嵌段。这是因为如果烧结体的每个块足够大以具有大于约50g的质量(例如,具有25mm×24mm×11mm或更大的近似尺寸),则烧结体可能不粗略完全但粉碎的粉碎部分可以留在烧结体的中心。因此,为了完全粗略地粉碎烧结体,将待氢粉碎过程的每个嵌段优选具有约25g或更小的质量。如果待粉碎的有缺陷的烧结体的重量大于约50g,则烧结体优选地用钳口破碎机机械地压碎。\n\n[0044]例如,如果需要使用盘式磨机,通过氢粉碎过程获得的粗粉末(即第一粗粉末)。此后,使用喷射磨机通过干磨技术细细粉碎第一粗粉末。得到的细粉末(即,第一细粉末)优选具有约1.5μm至约7μm的平均粒度。当使用喷射磨机进行这种干铣过程时,优选部分地除去含有大量氧的细粉颗粒。\n\n[0045]用喷射磨机将第一粗粉末精细粉碎的加工步骤和从品牌新材料获得第二细粉末的加工步骤可以同时使用相同的机器进行。如上所述,通过执行通过氢粉碎过程的合金块粗地粉碎具有预定组合物的合金块的处理步骤来获得第二细粉末,例如,使用所得粗粉(即,第二粗粉)进一步研磨例如,如有必要,一种磁盘磨机,然后通过使用喷射磨机通过干磨技术精细地粉碎第二粗粉末。第二细粉末也优选具有约1.5μm至约7μm的平均粒度。因此,通过使用摇摆混合器干混第一和第二粗粉末,然后使用喷射磨机将所得奶粉的所得混合物精细粉碎,可以获得第一和第二细粉末的混合粉末。应当注意,在干混和细细的粉碎处理步骤中,可以在需要时向粉末中加入润滑剂,使得第一和第二细粉末的表面涂覆有润滑剂。\n\n[0046]它自然可以通过相同的氢粉碎方法获得第一和第二粗粉末的混合物,然后通过相同的干铣过程获得第一和第二细粉末的混合物。也就是说,第一粗粉末(例如,烧结体块)的材料和第二粗粉末的材料(例如,条带铸造合金的块)可以预先混合,然后可以对混合物进行氢粉碎方法,得到第一和第二粗粉末的混合物。在任何情况下,为了最小化不需要的氧化,这些材料优选在粉碎成第一和第二细粉末之前彼此混合。\n\n[0047]通过淬火方法制备第二细粉末的材料(即具有预定组合物的合金嵌段)。这是因为如果从快速凝固的合金块(或薄片)获得第二细粉末,则不仅磁性特性而且还具有优异的第二细粉末的烧结性。因此,第二细粉末可以有效地补偿第一细粉末的低烧结性。从迅速凝固的合金嵌段获得的第二细粉末,可能是优异的烧结性,可能是富含R的阶段,其应更加薄而分散在第二细粉末的表面上,而不是由铸锭合金所获得的细粉末分散铸成模具。\n\n[0048]而且,第一和第二细粉末优选具有低氧含量。这是因为,即使第一和第二细粉的混合比在上述范围内落在上述范围内,如果其氧含量太高,所需的磁性可能是不可索取的。具体地,第一细粉末优选具有约1,500ppm至约10,000ppm的氧含量,而第二细粉末优选具有约1,500ppm至约7,000ppm的氧含量。然而,即使第一细粉末的氧含量超过该范围,也可以通过选择具有低氧含量作为第二细粉末的材料来实现足够好的磁性。无论如何,考虑到所需的磁性,优选确定第一细粉末与第二细粉末的混合比。\n\n[0049]一旦获得预期的混合粉末,就可以通过已知技术进行随后的制造和处理步骤。具体地,压制混合粉末并压实以获得所需形状的压块。接下来,如有必要,将紧凑型进行粘合剂去除方法,烧结过程和老化处理,从而获得烧结体。\n\n[0050]可以在大约0.2吨/厘米的压实压力下压制混合粉末和压实。2 约2.0吨/厘米2 (即,约1.96×104 KPA至约1.96×105 KPA)同时与约0.2mA / m至约4mA / m的定向磁场对齐。\n\n[0051]接下来,将所得结构紧凑在约1,000℃至约1,100℃的温度下烧结约1小时至约5小时,或者在惰性气体(例如,稀有气体或氮气)气氛中或真空内。然后将获得的烧结体在约450℃至约800℃的温度下进行老化处理约1小时至约8小时。任选地,可以省略老化处理。以这种方式,获得R-Fe-B型合金烧结体。而且,为了减少烧结体中包含的碳量,从而改善其磁性,覆盖合金粉末表面的润滑剂可以在烧结绿色块之前加热和蒸发。该润滑剂加热/蒸发处理步骤(即,粘合剂去除处理步骤)的条件可以随着润滑剂的类型而改变。例如,该处理步骤可以在约100℃至约600℃的温度下进行约0.5小时至在减压气氛中的约6小时。应该注意的是,如果将绿色结构保持在约800℃至约950℃的温度下约0.1小时至约2.0小时,然后在约1,000℃的温度下烧结至约1,100°然后,氢可以从包括氢化稀土元素的绿色紧凑型释放。结果,绿色紧凑型可以改善其顺序。\n\n[0052]接下来,通过磁化所得烧结体,完成烧结磁体。该磁化处理步骤可以在烧结处理步骤完成之后在任意时间点执行。如有必要,通过经受精加工(例如,倒角)工艺和表面处理(例如,电镀)来完成烧结磁体。由该优选实施方案的制造方法制备的稀土磁体的烧结体可以表现出与已经由第二细粉末(即,全新材料粉末)制成的烧结体的磁性。只要。\n\n[0053]在下文中,将通过具体实施例描述制备用于稀土磁体的烧结体和用于制造烧结磁体的方法的方法。应注意,本发明绝不限于以下说明性示例。\n\n[0054]由缺陷的稀土合金烧结体制成第一细粉末(即再循环材料的粉末)(重量约为500克,50mm×38mm×35mm的近似尺寸)。在该具体的例子中,烧结体在经受氢粉碎过程之前用钳口破碎机机械地压碎。然后,将所得嵌段分为多个基团(即,样品No.1至5),其质量块,并且每组块通过氢粉碎过程粗略地粉碎,其中块在氢气气氛中保持在a压力约为0.2MPa约3小时。接下来,使用例如间隙宽度为约0.3mm的光盘磨机进一步研磨所得粗粉末。此后,用喷射磨机将研磨的粉末精细地粉碎,以平均粒度为约4.5μm。以这种方式,获得第一细粉末。下表1中所示的每个样品1至5是以这种方式获得的第一细粉末。\n\n[0055]\n\n  表格1 块质量(g)烧结剩磁矫顽力 样本(方面:密度 BrIHC. 不。mm×mm×mm)(g / cm3) (T)(ka / m)  1 250 (40 × 30 × 28) 7.42 1.15 1476  2 100 (30 × 30 × 15) 7.48 1.16 1496  3  70 (30 × 28 × 11) 7.55 1.17 1515  4  50 (25 × 24 × 11) 7.55 1.17 1560  5  25 (20 × 20 × 8)  7.55 1.17 1576  6 — 7.55 1.17 1578\n\n应注意,经过氢粉碎过程的样品烧结体而不预先在机械上被压碎的情况下不能完全粉碎。因此,无垫层化部分(核心)仍然围绕烧结体的中心。\n\n[0056]作为由此制备第二细粉末的合金块,通过带浇铸过程制备具有预定组合物的合金薄片。合金薄片的氧含量为约320ppm。通过氢粉碎过程粉碎合金薄片,从而获得第二粗粉。接下来,将第二粗粉用盘式磨机进一步研磨,然后用喷射磨机细细地粉碎。以这种方式,获得平均粒径为约4.5μm的第二细粉末。应当注意,在具有非常低的氧含量的氮气气氛中进行射流铣削加工步骤,以减少稀土元素的氧化。还应注意,用作第一细粉末材料的烧结体由通过通过相同制造和加工步骤制备的细粉制成的,作为获得第二细粉末的细粉末。日本公开公开No.2002-33206和美国专利No.5,199,480中公开了使用喷射磨机的粉碎过程。美国专利号6,491,765,其通过引用并入本文。\n\n[0057]以这种方式获得的第一和第二细粉末的组合物如下表2所示:\n\n[0058]\n\n  表2. 样本r(nd + pr)dyCO. B Al铜 O C 1st 罚款 29.2 2.6 0.9 1.0 0.2 0.16200 ppm.550 ppm. 粉末 2nd 罚款 28.5 3.3 0.9 1.1 0.3 0.155000 ppm.450 ppm. 粉末\n\n应当注意,通过分析刚刚通过盘式磨机研磨的粉末的组成来获得第一细粉末的组成。所有样品1至5都有大致相同的成分,并且它们之间的差异落在耐受性范围内。在表2中,表示组合物的数值以质量百分比表示,并且在表2中未描述的第一或第二细粉末的平衡包括Fe和不可避免地含有杂质。\n\n[0059]接下来,将第一细粉末的每个样品1至5与第二细粉末混合,使得第一细粉末的质量对应于第二细粉末的约5%。然后,由该混合粉末制成烧结体。另一种烧结体也仅作为来自第二细粉末的6种样品。\n\n[0060]在完成压实过程之后,随后的制造和处理步骤在以下条件下进行。\n\n[0061]具体地,将混合粉末(对应于样品1至5)和第二细粉末(样品No.6)压制并压实在约0.8吨/厘米的压实压力下2 (相当于约7.84×104 KPA)在约0.96mA / m的定向磁场下施加约0.96mA / m(相当于约1.2吨),从而获得垂直尺寸为约40mm的绿色块,水平尺寸为约30mm,高度约20mm。定向磁场基本上垂直于压实方向施加。随后,将这些绿色块保持在约900℃的减压AR气氛中约1小时,从而从中除去氢,然后在约1,050℃下烧结约4小时。此后,将烧结体在约500℃下进行老化处理约1小时。最后,将这些烧结体加工成测试样品,近似尺寸为5.4mm×12mm×12mm。接下来,使用B-H示踪剂,评价所得烧结磁体的磁性。所得烧结磁体(或压块)的密度和磁性也在表1中示出。\n\n[0062]从表1中所示的结果可以看出,当要经受氢粉碎过程的烧结体块的质量超过约50g时,其磁性(即矫顽力)劣化。并且当烧结体块的质量进一步增加到大于约70克以上时,烧结密度也降低。据信烧结密度和磁性降低的原因是应该将意外的粗粉末混合到细粉末中以劣化烧结性并产生过大的晶粒。相反,如果烧结体块的质量为约50g或更小,则所得磁性的磁性与仅通过使用第二细粉末获得的物质相当。并且当烧结体块的质量减少至约25g或更小时,所得磁性基本上与仅使用第二细粉末实现的磁性基本相同。从这些结果中可以清楚地看出,要受到氢粉碎过程的烧结体块的质量优选为约50g或更低,更优选约25g或更小。具体地,当烧结体块的质量为约50g或更小时,烧结体块可以通过氢粉碎过程几乎粉碎到芯。结果,例如,在细粉末中没有硬粗粉末颗粒将通过随后的细细粉碎处理步骤,例如使用喷射磨机获得。如有必要,即使在细细粉碎处理步骤之后,也可以留下可以留下的粗粉颗粒的处理步骤也可以另外进行。应注意,烧结体通常包括约3,500ppm至约6,500ppm的氧气重量。\n\n[0063]此外,烧结体的晶粒(即主阶段)优选具有约20μm或更小的尺寸。这是因为如果烧结体的晶粒的尺寸大于约20μm,则例如,这种烧结体的粗粉末不能通过喷射磨机细细地粉碎。\n\n[0064]当第一细粉与第二细粉末的混合比约为约5质量%时,获得表1中所示的结果。下表3显示了烧结体的密度和磁性如何随混合比而改变。\n\n[0065]\n\n  表3 混合烧结密度剩磁矫顽力 比率(g / cm3)B.r (t)IHC(KA / M) 15质量% 7.51 1.15 1498 10质量% 7.53 1.17 1561 5质量% 7.55 1.17 1576 0质量% 7.55 1.17 1578\n\n在表3中,表1中所示的样品5用作第一细粉末。从表3中所示的结果可以清楚地看出,当混合比率超过约10质量%时,烧结密度和磁性均减少。另一方面,如果混合率为约10质量%或更低,则应使用仅通过使用第二细粉末获得的磁性几乎相同。\n\n[0066]上述各种优选实施例提供了一种制备稀土磁体的烧结体的方法,同时更有效地再循环缺陷的稀土合金烧结体。在根据本发明的优选实施方案的制备稀土磁体的烧结体的方法中,不需要制备具有特殊组合物的稀土合金,以便使用再循环材料粉末(即,通过粉碎缺陷的稀土合金烧结体获得的第一细粉末。因此,可以容易地进行本发明的优选实施例而不使电流的制造方法复杂化。\n\n[0067]应当理解,前述描述仅是本发明的说明性。在不脱离本发明的情况下,本领域技术人员可以设计各种替代和修改。因此,本发明旨在包括落入所附权利要求的范围内的所有这些替代,修改和变化。');
INSERT INTO `os_patent_instruction_text` VALUES (12931, 22760, '【0001】\n\n【発明の属する技術分野】\n\n本発明は、R-Fe-B系のナノコンポジット急冷合金から作製されるバルク磁石およびその製造方法に関する。\n\n【0002】\n\n【従来の技術】\n\nR-Fe-B系永久磁石は、種々の磁石のなかで最大磁気エネルギー積が最も高く、種々の用途に利用されている。\n\n【0003】\n\nR-Fe-B系永久磁石は、メルトスピニング法などの急冷法を用いて作製された急冷合金を粉砕して得られる急冷合金粉末を結合剤と混合したボンド磁石として用いられる。しかしながら、ボンド磁石では、急冷合金粉末の体積分率を80%以上に高めることが難しいため、磁気特性が制限される。\n\n【0004】\n\nボンド磁石よりも急冷合金粉末の体積分率が高い磁石として、バルク磁石(「フルデンス磁石」と呼ばれることもある)が知られている。例えば、R-Fe-B系バルク磁石として、MQI社から、MQ2(等方性磁石)およびMQ3(異方性磁石)が市販されている。これらのバルク磁石は、磁性相としてNd2Fe14B型結晶構造を有する硬磁性相だけを有し、急冷合金粉末を熱間成形(例えばホットプレス)などの方法で高密度化することにより製造される。\n\n【0005】\n\n一方、近年、いわゆるナノコンポジット磁石(「交換スプリング磁石」または単に「スプ\n\nリング磁石」と呼ばれることもある。)の高性能化が進んでいる。ナノコンポジット磁石は、Nd2Fe14B相などの硬磁性相と、α-Fe相や鉄基硼化物相(例えば、Fe3B相やFe23B6相)などの軟磁性相とが、ナノメートルオーダーで組織を形成した磁石であり、高い磁化を得ることができる。本明細書において、硬磁性相として、少なくともNd2Fe14B型結晶構造を有する硬磁性相を含み、α-Fe相や鉄基硼化物相などの少なくとも1種の軟磁性相を含むナノコンポジット磁石をR-Fe-B系ナノコンポジット磁石ということにする。R-Fe-B系ナノコンポジット磁石も、メルトスピニングなどの急冷法を用いて作製された急冷合金を粉砕して得られる急冷合金粉末から製造される。なお、ナノコンポジットバルク磁石は、その原料である急冷合金粉末がナノコンポジット組織を有している必要はなく、最終的なバルク成形体がナノコンポジット組織を有していれば良い。本明細書において、最終的にナノコンポジット磁石となり得る急冷合金粉末のことを「ナノコンポジット磁石用急冷合金粉末」と呼ぶことがある。\n\n【0006】\n\nR-Fe-B系ナノコンポジット磁石は、MQ粉に代表される従来のR-Fe-B系永久磁石よりも希土類元素の含有率が低く(典型的には10原子%未満)、そのために比較的安価であるという利点がある。また、従来のR-Fe-B系永久磁石では、Nd2Fe14B相の粒界にNdに富んだ相(すなわち、Nd2Fe14B相の化学量論組成よりもNdの含有率の高い相)が存在するのに対し、R-Fe-B系ナノコンポジット磁石には、このような希土類元素の含有率が高い相が存在しないので、磁石自身の耐食性が比較的優れるという利点を有している。従って、R-Fe-B系ナノコンポジット磁石は、従来のR-Fe-B系永久磁石よりも簡易な表面処理でも十分な耐食性を得ることができると期待される。\n\n【0007】\n\n【発明が解決しようとする課題】\n\nしかしながら、R-Fe-B系ナノコンポジット磁石のバルク磁石は、まだ市販されるに至っていない。\n\n【0008】\n\nその主な原因の一つは、ナノコンポジット磁石用急冷合金粉末を用いて十分に緻密なバルク成形体を形成することが困難なことにある。これは、従来のR-Fe-B系永久磁石の製造過程においては、上述した希土類元素の含有率が高い相が熱間成形時に液相となり、この液相がバルク成形体の緻密化に寄与するのに対し、R-Fe-B系ナノコンポジット磁石の製造過程においては液相が形成されないためと考えられる。\n\n【0009】\n\nさらに、ナノコンポジット磁石用急冷合金粉末を用いてある程度の密度のバルク成形体が得られても、バルク成形体の表面に多くの空隙や孔が形成されると、バルク成形体に表面処理を施して表面に被膜を形成しても、耐食性を十分に向上できないことがある。これは、単純にバルク成形体の密度の問題ではなく、空隙や孔の分布に依存することを種々の実験から見出した。\n\n【0010】\n\n本発明はかかる諸点に鑑みてなされたものであり、その主な目的は、R-Fe-B系ナノコンポジット磁石のバルク成形体の密度を向上させるとともに、耐食性に優れたR-Fe-B系のナノコンポジットバルク磁石およびその製造方法を提供することにある。\n\n【0011】\n\n【課題を解決するための手段】\n\n本発明によるバルク磁石の製造方法は、少なくとも1種の硬磁性相および少なくとも1種の軟磁性相を有するナノコンポジットバルク磁石の製造方法であって、粒径が53μm以下の第1粒子を10質量%以上含む、R-Fe-B系の急冷合金粉末を準備する工程と、前記急冷合金粉末を熱間成形することによってバルク成形体を得る工程とを包含することを特徴とする。\n\n【0012】\n\n前記急冷合金粉末は、粒径が106μm超の第2粒子を含み、前記第2粒子のうちの個数百分率で60%以上の粒子のアスペクト比が0.4以上であることが好ましい。\n\n【0013】\n\nある好ましい実施形態において、前記急冷合金粉末を準備する工程は、合金溶湯を急冷することによって、厚さが60μm以上300μm以下の急冷合金を作製する工程と、前記急冷合金を粉砕する工程とを包含する。\n\n【0014】\n\n前記急冷合金粉末の質量基準の粒度分布は、少なくとも2つのピークを有し、前記少なくとも2つのピークは、106μm以下にある少なくとも1つのピークを含むことが好ましい。\n\n【0015】\n\nある実施形態において、前記バルク成形体はα-Fe相を含む。あるいは、前記バルク成形体は鉄基硼化物相を含んでもよい。\n\n【0016】\n\nある好ましい実施形態において、前記バルク成形体に表面処理を行う工程をさらに包含する。\n\n【0017】\n\n本発明によるバルク磁石は、上記のいずれかの製造方法によって製造されることを特徴とする。\n\n【0018】\n\n好ましい実施形態において、バルク磁石は、バルク成形体と、前記バルク成形体の表面に形成された被膜とを有する。前記被膜の厚さは5μm以下であることが好ましい。\n\n【0019】\n\n【発明の実施の形態】\n\n本発明のナノコンポジットバルク磁石の製造方法は、粒径が53μm以下の第1粒子を10質量%以上含むR-Fe-B系ナノコンポジット磁石用急冷合金粉末を準備する工程と、この急冷合金粉末を熱間成形することによってバルク成形体を得る工程とを包含する。\n\n【0020】\n\n本発明に用いられるR-Fe-B系ナノコンポジット磁石用急冷合金粉末としては、希土類元素(イットリウムを含む)から選ばれる少なくとも1種の元素、鉄または鉄と他の遷移金属元素と、硼素または硼素と炭素とを主成分とし、希土類元素の含有率が10原子%未満のものを好適に用いることができる。\n\n【0021】\n\nさらに、本発明に用いられるR-Fe-B系ナノコンポジット磁石用急冷合金粉末は、所定の組成の希土類合金の溶湯をメルトスピニング法などの急冷法を用いて作製された急冷合金粉末を加熱処理することによって製造されるものが好ましい。最終的なバルク磁石における組織は、平均結晶粒径が500nm以下の硬磁性相と軟磁性相とを有するナノコンポジット組織を形成していることが好ましい。\n\n【0022】\n\n最終的なバルク磁石における硬磁性相は、Nd2Fe14B型結晶構造を有する硬磁性相(簡単のために単に「Nd2Fe14B相」ということもある。)であり、軟磁性相は、α-Fe相および/または鉄基硼化物相(例えば、Fe3B相やFe23B6相)などである。\n\n【0023】\n\nここで、軟磁性相として結晶化によって鉄基硼化物相を形成する材料を用いる場合、結晶化が進んだ合金粉末を用いてバルク成形体を形成すると、緻密化の困難さに起因して、表面の空隙を減少させることが困難となるので、非晶質を含む合金粉末(例えば、非晶質の体積%が30%以上)を用いることが好ましい。\n\n【0024】\n\nこのような急冷合金粉末の組成は、組成式T100-x-yQxRy(Tは、Feまたは、CoおよびNiからなる群から選択された少なくとも1種の元素とFeとを含む遷移金属元素\n\n、QはBおよびCからなる群から選択されたすくなくとも1種の元素、Rは希土類元素(Yを含む)の内でLaおよびCeを実質的に含まない少なくとも1種の希土類金属元素)で表され、組成比率xおよびyが、それぞれ、10原子%≦x≦30原子%、1原子%≦yZr、Nb、Mo、Hf、Ta、W、Pt、Pb、Auからなる群から選択される少なくとも1種の元素などで置換してもよく、また、不可避不純物を含むことがある。\n\n【0025】\n\n一方、軟磁性相として結晶化によってα-Fe相を形成する材料は、α-Fe相がバルク成形体の緻密化に寄与するため、本発明により好適に用いることができる。\n\n【0026】\n\nこのような急冷合金粉末の組成は、組成式T100-x-yQxRy(Tは、Feまたは、CoおよびNiからなる群から選択された少なくとも1種の元素とFeとを含む遷移金属元素、QはBおよびCからなる群から選択されたすくなくとも1種の元素、Rは希土類元素(Yを含む)の内でLaおよびCeを実質的に含まない少なくとも1種の希土類金属元素)で表され、組成比率xおよびyが、それぞれ、3原子%≦xZr、Nb、Mo、Hf、Ta、W、Pt、Pb、Auからなる群から選択される少なくとも1種の元素などで置換してもよく、また、不可避不純物を含むことがある。\n\n【0027】\n\nさらに、硬磁性相の体積比率が小さい場合、めっきなどによって硬磁性相が優先的に腐食され、ナノコンポジット磁石の磁気特性の発現に必要な、硬磁性相と軟磁性相との間の交換相互作用が十分に得られなくなるので、本発明の効果は、硬磁性相の体積比率が高い(例えば、60%以上)ナノコンポジット磁石において顕著に得られる。\n\n【0028】\n\n以上の観点から、本発明に用いられるR-Fe-B系ナノコンポジット磁石用急冷合金粉末の組成としては、上記組成式において、5原子%≦x≦15原子%、5原子%≦y【0029】\n\n上述の組成を有し、最終的に上述の組織を形成するナノコンポジット磁石用急冷合金粉末が、粒径が53μm以下の第1粒子を10質量%以上含むように調整する。これは、急冷法によって得られた急冷合金を、必要に応じて、粉砕および/または分級などによって粒度分布を調節することによって得られる。\n\n【0030】\n\nバルク成形体の作製に供される急冷合金粉末に、粒径が53μm以下の第1粒子を10質量%以上含ませることによって、バルク成形体の密度を高めることが出来るとともに、バルク成形体中に形成される空隙(孔を含む)の分布が均一となり、バルク成形体の表面に形成される空隙が少なく且つ小さくなる。その結果、バルク成形体に表面処理を施し被膜を形成することによって、耐食性に優れたバルク磁石が得られる。\n\n【0031】\n\n特に、本発明によるバルク磁石にめっき法や電着塗装法等の湿式表面処理法を用いて被膜を形成する場合、バルク成形体の表面に形成される空隙が少なく且つ小さいので、処理液が被膜の下に残存することによる耐食性の低下の問題が抑制される。樹脂塗装法を用いる\n\n場合には、空隙に残存する溶剤が蒸発する際に被膜にピンホールが形成されることが抑制される。また、蒸着法などの薄膜堆積法を採用する場合には、バルク成形体の空隙部分における被覆不良によって被膜にピンホールが形成されることが抑制される。\n\n【0032】\n\n本発明に用いる急冷合金粉末は、粒径が106μm超の第2粒子を含み、第2粒子のうちの個数百分率で60%以上の粒子のアスペクト比が0.4以上であることが好ましい。以下にこの理由を説明する。\n\n【0033】\n\nMQ粉に代表される従来のR-Fe-B系急冷合金粉末は、アスペクト比(短軸の長/長軸の長さ)が0.3未満であったが、熱間成形過程で液相を形成するため、十分に緻密なバルク成形体が得られた。すなわち、従来のR-Fe-B系バルク磁石の製造においては、その原料となる急冷合金粉末のアスペクト比は緻密性を向上させる重要な因子ではなかった。しかしながら、上述したように、ナノコンポジット磁石用急冷合金粉末は、熱間成形過程で液相を形成しないため、アスペクト比が緻密性に影響することがわかった。\n\n【0034】\n\nそこで、種々検討した結果、急冷合金粉末に含まれる粒径が106μm超の第2粒子のうちの個数百分率で60%以上の粒子のアスペクト比が0.4以上となるように調整することによって、緻密性を向上できることがわかった。粒径が106μm超の粒子にアスペクト比が0.4以上の粒子を含ませると、圧粉体(粉末成形体)中に形成される空隙の分布が均一になり、この空隙に、上述の第1粒子が分配される結果、熱間成形によってより緻密なバルク成形体が得られるものと考えられる。さらに、第2粒子の70%以上の粒子のアスペクト比が0.4以上であることがより好ましい。\n\n【0035】\n\nなお、急冷合金粉末中の粒径が106μm超の第2粒子のアスペクト比は、JIS  Z8801準拠のふるいを用いて、粒径が106μm以下の粒子を取り除いた後、電子顕微鏡など、粒子形状がわかる装置を用いて、個々の粒子のアスペクト比を計測し、(アスペクト比が0.4以上の粒子数/計測した粒子の総数)から求めた。\n\n【0036】\n\nなお、急冷合金粉末の平均粒径は、緻密性の観点から、300μm以下が好ましく、50μm以上200μm以下の範囲にあることがさらに好ましい。また、急冷合金粉末の95質量%以上の粒径が300μm以下であることが好ましい。\n\n【0037】\n\nまた、急冷合金粉末の質量基準の粒度分布が少なくとも2つのピークを有し、そのうちの少なくとも一方が106μm以下にあるように、粒度分布を調整すると、緻密性をさらに向上することが出来る。なお、質量基準の粒度分布は、JIS  Z8801準拠のふるいを用いて求める。\n\n【0038】\n\n上述のようなアスペクト比の粒子を含む急冷合金粉末は、メルトスピニング法やストリップキャスト法を用いて、合金溶湯を急冷することによって、厚さが60μm以上300μm以下の急冷合金を作製し、得られた急冷合金を粉砕することによって、効率的に作製することができる。なお、粒径が小さなものほどアスペクト比が大きくなる傾向にあるので、106μm超の粒子の60%(個数百分率)の以上の粒子のアスペクト比が0.4以上となるように粉砕すれば、106μm以下の粒子の60%(個数百分率)超の粒子のアスペクト比が0.4以上となる。粉砕は、例えば、パワーミル装置で粒径が約850μm以下となるまで急冷合金を粗粉砕した後、ピンディスクミル装置によって粒径が約150μm〜約300μmとなるまで粉砕する。\n\n【0039】\n\nまた、ガスアトマイズ法を用いてナノコンポジット磁石用急冷合金粉末を作製してもよい。ガスアトマイズ法を用いて合金溶湯から合金粉末を作製する場合は、急冷によって、アスペクト比が0.4以上の粒状の粉末粒子が得られるため、その後に粉砕工程を別途行う\n\n必要は無い。なおガスアトマイズ法による場合は、冷却が粉末粒子の内部にまで均質に達成されるように粉末粒子のサイズを150μm以下に調節することが好ましい。\n\n【0040】\n\nなお、バルク成形体の形成に供される急冷合金粉末は、急冷したものをそのまま用いても良いし、適宜、結晶化のための熱処理を施してから用いても良い。粉砕や粒度調整は、熱処理の前でも後でも良い。また、熱処理を施した粉末と熱処理を施していない粉末とを混合して用いても良い。\n\n【0041】\n\n上述のように準備したナノコンポジット磁石用急冷合金粉末を熱間成形することによって、バルク成形体を作製する。このとき、急冷合金粉末に、10体積%未満の金属粉末(例えば、Al)や無機粉末(例えば、ガラス、酸化ケイ素)を混合しても良い。\n\n【0042】\n\n熱間成形の方法としては、放電プラズマ焼結法やホットプレス法などを採用することができる。また、目的とするバルク成形体の形状に応じて、圧縮成形、押出し成形などを適宜併用することができる。\n\n【0043】\n\n放電プラズマ焼結法は、例えば、図1に示す放電プラズマ焼結装置を用いて実行することができる。\n\n【0044】\n\nこの装置は、水冷チャンバ26と、その内部に位置する焼結ダイス27と、この焼結ダイス27内の粉体に圧力を与えるための上部パンチ28aおよび下部パンチ28bとを備えている。上部パンチ28aおよび下部パンチ28bは、特殊加圧機構29によって押圧されるとともに、特殊焼結電源31によって粉体に通電を行うことができるように構成されている。特殊焼結電源31は、上部パンチ電極30aおよび下部パンチ電極30bを介して、ダイス27内の粉体に電力を投じ、放電プラズマを形成する。特殊加圧機構29および特殊焼結電源31は制御装置32によって制御される。焼結ダイス27、上部パンチ28aおよび下部パンチ28bの材料としては、カーボン、超硬合金などの公知の材料を用いることが出来る。\n\n【0045】\n\nこのような装置を用いて行う放電プラズマ焼結法では、直流電流とパルス電流列とを重ねて流し、それによって、アーク放電に移行する直前の過度アーク放電現象を利用するため、加圧下で効果的な焼結を行うことができる。より詳しくは、圧粉体粒子間隙に直接パルス状の電気エネルギーを投入し、火花放電によって瞬時に発生する高温プラズマのエネルギーを焼結に利用する。そのため、急速昇温が可能であり、原料粉末の粒成長を制御しやすい。このように放電プラズマ焼結法は、短時間で緻密な焼結体を形成するのに適しているため、本発明のようにナノコンポジットバルク成形体を作製する上で好適である。\n\n【0046】\n\nこのような装置によって10MPa以上の圧力を急冷合金粉末に印加すれば、400℃〜850℃程度の焼結温度で良質のバルク成形体を得ることができる。最適な圧力範囲は、急冷合金粉末の組成によって異なるが、50MPa以上500MPa以下の範囲にあることが好ましい。\n\n【0047】\n\n本発明では、上述のような急冷合金粉末を用いているので、合金真密度の90%以上の密度を有するバルク成形体を得ることができ、さらに、バルク成形体の表面に形成される孔は少なく且つ小さい。従って、このようにして得られたバルク成形体に表面処理を行うことによって、耐食性に優れたバルク磁石が得られる。\n\n【0048】\n\nなお、熱間押出し成形法などを用いて、バルク成形体に塑性加工を施すことにより、磁気異方性を付与することができる。また、バルク成形体にさらに熱処理を施すことによって、磁気特性を最適化してもよい。さらに、最終的に必要とされる寸法精度を得たり、ある\n\nいは、バルク成形体の表面の酸化層を除去するために、研削などの種々の加工を施しても良い。\n\n【0049】\n\n表面処理方法としては、公知の方法を広く用いることができる。表面処理によって形成される保護膜は、無機材料(金属、セラミック、無機高分子など)でも有機材料(低分子、高分子など)や無機·有機複合材料を用いることもできる。これらの保護膜は、用いる材料に応じて、種々の方法で形成することができる。\n\n【0050】\n\n例えば、金属膜は、めっき法(電解めっきおよび無電解めっき法など)や種々の薄膜堆積技術(真空蒸着法、イオンプレーティング法、スパッタ法、イオンビーム法など)さらに、SnやZnなどの低融点の溶融金属に浸漬し冷却する方法などを採用することができる。金属被膜としては、アルミニウム、チタニウム、ニッケル、銅、クロムおよびこれらを含む合金を用いて形成することが好ましく、バルク磁石を装置に固定する際に用いる接着剤との接着性、表面清浄性など、用途に応じて適宜選択すればよい。\n\n【0051】\n\nセラミックス材料の膜は、金属膜と同様に薄膜堆積技術を用いて形成しても良いし、ゾルゲル法を利用する場合の処理液やアルカリ珪酸塩水溶液などを使用し、ディッピング法やスプレー法などを用いて形成しても良い。また、電気泳動電着法などを採用しても良い。\n\n【0052】\n\n樹脂膜は、有機高分子材料を用いて、電着塗装、スプレー塗装、静電塗装、ディップ塗装、ロールコート法などの種々の方法を用いて形成できる。また、同様の方法で、無機高分子材料(例えばシリコーン樹脂)の膜を形成することもできる。\n\n【0053】\n\nまた、カップリング剤(シラン系、チタネート系、アルミネート系、ジルコネート系など)やベンゾトリアゾールなどの低分子量有機材料を用いて保護膜を形成することもできる。これらの低分子有機材料は、溶液としてバルク成形体に種々の方法で付与することができる。\n\n【0054】\n\nまた、種々の方法で微粒子を被着(堆積)することによって保護膜を形成することもできる。微粒子としては、Al、Zn、Ni、Cu、Fe,Co,Sn,Pb,Au,Agなどの金属微粒子、SiO2、Al2O3、ZrO2、MgO、TiO2、ムライト、チタン酸塩、けい酸塩などの金属酸化物および複合金属酸化物(ガラスを含む)、TiN、AlN,BN、TiC、TiCN、TiB2などのセラミック微粒子、ポリテトラフルオロエチレン、アクリル樹脂などの樹脂微粒子、カーボンブラックやMoS2などが挙げられる。\n\n【0055】\n\nなお、これらの微粒子をバルク成形体の表面に固定するために、必要に応じてバインダを用いてもよい。バインダの材料としては、クロム酸やモリブデン酸、リン酸およびこれらの塩などの無機材料、カップリング剤などの低分子量有機化合物、有機樹脂などの高分子化合物などを用いることができる。\n\n【0056】\n\nバルク成形体の表面に微粒子を固定する方法としては、予め微粒子とバインダを混合したものをスプレー法やディッピング法などの塗布法を用いてもよいし、バルク成形体の表面に予め形成したバインダ層に微粒子を機械的な力を利用して付着させても良い。また、必要に応じて、加熱処理を施し、微粒子をさらに強固にバルク成形体表面に固着させても良い。\n\n【0057】\n\n保護膜は成形上がりのバルク成形体に新たな膜として形成するだけでなく、バルク成形体の表面を改質することによって形成してもよい。バルク成形体表面における磁粉との反応を利用してもよい。例えば、リン酸処理、リン酸亜鉛処理、リン酸マンガン処理、リン酸カルシウム処理、リン酸クロメート処理、クロム酸処理、ジルコニウム酸処理、タングス\n\nテン酸処理、モリブデン酸処理などの種々の化成処理を挙げることができる。\n\n【0058】\n\nここで本発明におけるバルク成形体中の希土類元素(典型的にはNd)の含有率が低いので、鉄鋼の分野で一般に用いられている化成処理を用いても、十分な耐食性を得ることができる。\n\n【0059】\n\nさらには、バルク成形体の表面を種々の方法で酸化することによって適当な厚さの酸化膜を形成してもよい。ここで、本発明におけるナノコンポジット磁石は、本質的に、希土類元素に富んだ相(典型的にはNdリッチ相)を含まないため、耐食性、特に湿潤下での耐食性に優れた酸化膜を形成することができる。\n\n【0060】\n\nまた、上述したように、本発明のバルク成形体は本質的に空隙を少なくできるため、耐食性に優れ、且つ、各種表面処理に適しているが、過酷な環境で使用される場合などには、磁石の信頼性をさらに向上するために、種々の封孔処理を行っても良い。\n\n【0061】\n\nまた、上述した表面処理は適宜組み合わせてもよく、例えば、異なる材料を用いて積層膜を形成してもよい。\n\n【0062】\n\n上述したように、本発明によるナノコンポジットバルク成形体は、希土類元素の含有率が従来のMQ2やMQ3に比べて少ないために本質的に耐食性が優れる上に、成形体の表面に形成される空隙が少なく且つ小さいので、従来よりも薄い被膜を形成しても、従来よりも優れた耐食性が得られ、特に、被膜の厚さが5μm以下の場合に優れた効果を発揮する。このように被膜の厚さを小さくできることにより、モータなどに組み込んだ際の磁気的なギャップを減少させて、エネルギー効率の高いモータを得ることが可能となる。\n\n【0063】\n\nまた、メッキなどの湿式表面処理を行う場合、ナノコンポジットバルク成形体の構成成分が処理液中に溶出する量が、MQ2やMQ3磁石よりも少ないので、処理液の管理·交換のための工程を削減することできる利点も得られる。\n\n【0064】\n\n【実施例】\n\n(実施例A)\n\n絶対圧力が30kPaのアルゴン雰囲気中で、厚さ5〜15μmのクロムめっき層を形成した直径350mmの銅合金性冷却ロールを15m/minの周速度で回転し、メルトスピニング法(単ロール法)によって、Nd5.5Fe66B18.5Co5Cr5の組成(原子比)を有する急冷合金の薄帯を作製した。\n\n【0065】\n\n得られた急冷合金薄帯の結晶構造をX線回折で測定した結果、薄帯のほぼ100%が非晶質であった。\n\n【0066】\n\n上記急冷合金の薄帯をパワーミルおよびピンディスクミルを用いて粉砕した後、JIS  Z8801準拠の標準ふるいを用いて分級し、表1のように粒度調整を行い、実施例1、2および比較例1の急冷合金粉末とした。\n\n【0067】\n\n【表1】\n\n\n\n【0068】\n\nそれぞれの粉末を構成する粒子のうち、粒径が106μmを超える粒子200個について、電子顕微鏡でアスペクト比を求めた結果、0.4以上のものが、実施例1は91%、実施例2は約62.5%、比較例1は52%であった。\n\n【0069】\n\n実施例1、2および比較例1のサンプル11.78gを以下の方法で熱間圧縮成形を行うことにより、直径20mm、高さの5mm(狙い寸法)円形状のバルク磁石とした。\n\n【0070】\n\n熱間圧縮成形装置としては、図1に示した放電プラズマ焼結装置を用い、超硬合金製のダイスとパンチを使用した。\n\n【0071】\n\n合金粉末を金型に投入し、放電プラズマ焼結装置にセットし、装置内を1Pa以下に減圧した後、196MPaの加圧下で放電プラズマ焼結(パルス通電焼結)を行った。\n\n【0072】\n\nなお、放電プラズマ焼結時の温度は、超硬合金製のダイスに穴を開け、熱電対を挿入して測定した。\n\n【0073】\n\nパルス通電焼結による昇温速度は40℃/minとし、その後、670℃で5分間保持し、その後通電を止めて放冷した。得られたバルク成形体は、合金真密度の94%の密度に緻密化されていた。\n\n【0074】\n\n上記バルク成形体10個をバレル研磨し、表面の酸化層を除去した後、直径2mmのスチールボールといっしょに耐熱プラスチック製のバレル治具に投入した。上記バレルを回転数5rpmで、硝酸ナトリウム0.2mol/L、硫酸1.5vol%からなる液温30℃の処理液に4分間浸漬した後、直ちに1μS/cm以下のイオン交換水で30秒間超音波洗浄し、その後速やかにめっきを開始した。\n\n【0075】\n\nその後、硫酸ニッケル·6水和物240g/L、塩化ニッケル·6水和物45g/L、ホウ酸30g/L、光沢剤として2-ブチン-1、4ジオールを0.2g/L、サッカリン1g/L用いたpH=4.2(炭酸ニッケルで調整)、液温50℃のめっき浴を使用し、電流密度0.2A/dm2で100分間電解めっきを行い、ニッケルめっき被膜を形成し\n\nたのち、磁石をバレルから取り出し、水洗を行った。蛍光X線膜厚計で測定しためっき被膜の膜厚(磁石5個の平均値)を表2に示す。\n\n【0076】\n\n得られた磁石10個を80℃90%の高温高湿下に500時間放置したあとの磁石の外観を調査した。なお、外観は目視で、発錆、被膜のフクレなどの異常は認められなかったものを合格とした。結果を表2に示す。\n\n【0077】\n\n表2から明らかなように、53μm以下の粒子の含有率が少ない合金粉末を用いた比較例に比べ、53μm以下の粒子を10質量%以上含む実施例のバルク磁石の耐食性が優れていることがわかる。\n\n【0078】\n\n特に、実施例1に用いた合金粉末は、粒径が106μm超の粒子のうちアスペクト比が0.4を超える粒子の割合が多く、さらに、その質量基準の粒度分布に2つのピークを有し、且つ、一方のピークが106μm以下にあり、その結果、バルク成形体の表面に形成される孔がさらに少なく且つ小さいため、優れた耐食性を示している。\n\n【0079】\n\n【表2】\n\n\n\n【0080】\n\nまた、実施例1の磁石について高温高湿下放置前後における磁石特性をBHトレーサを用いて評価した。結果を表3に示す。高温高湿放置による磁気特性の低下はほとんど見られなかった。\n\n【0081】\n\n【表3】\n\n\n\n【0082】\n\n(実施例B)\n\nNd:8.9原子%、B:12.6原子%、Ti:3.0原子%、C:4原子%、Nb:1原子%、残部Feの合金組成になるように配合した原料5kgを坩堝内に投入した後、50kPaに保持したAr雰囲気中にて高周波誘導加熱により合金溶湯を得た。\n\n【0083】\n\nストリップキャスト法を用いて急冷合金を得た。具体的には、坩堝を傾転することによって、上記合金溶湯をシュートを介して、ロール表面周速度14m/秒にて回転する純銅製の冷却ロール(直径250mm)上に供給し、合金溶湯を急冷した。なお、ロールに溶湯を供給する際には、シュート上で溶湯を2条に分流し、その際の溶湯の供給速度は坩堝の傾転角度を調整することにより、1条あたり1.3kg/分に調整した。\n\n【0084】\n\n得られた急冷合金の平均厚さは85μmでその標準偏差はδは13μmであった。得られた急冷合金の一部を850μm以下に粉砕した後、フープベルト炉を用い、Ar粒気下、ベルト送り速度100mm/分にて780℃に保持した炉内へ粉末を20g/分の供給速度で投入することによって熱処理を施した磁粉の結晶構造を粉末X線回折法を用いて解析した結果、Nd2Fe14B相とFe23B6相およびα-Fe相から構成されていた。\n\n【0085】\n\n次に、上記急冷合金ピンディスクミルを用いて粉砕した後、JIS  Z8801の標準ふるいを用いて分級を行った後、表4のような粒度分布を持つ磁粉になるように調整した。\n\n【0086】\n\n【表4】\n\n\n\n【0087】\n\n実施例3および比較例2のサンプル11.78gを以下の方法で熱間圧縮成形を行うことにより、直径20mm、高さの5mm(狙い寸法)の円柱状のバルク磁石とした。\n\n【0088】\n\n熱間圧縮成形装置としては、放電プラズマ焼結装置を用い、超硬合金製のダイスとパンチを使用した。\n\n【0089】\n\n粉末を金型に投入し、放電プラズマ焼結装置にセットし、装置内を1Pa以下に減圧した後、300MPaの加圧下で放電プラズマ焼結(パルス通電焼結)を行った。\n\n【0090】\n\nなお、放電プラズマ焼結時の温度は、超硬合金製のダイスに穴を開け、熱電対を挿入して測定した。\n\n【0091】\n\nパルス通電焼結による昇温速度は100℃/minとし、その後、780℃で5分間保持し、その後通電を止めて放冷した。\n\n【0092】\n\n上記バルク成形体10個に対して投射材としてアランダム♯180(新東ブレーター製)を用いて、ショットブラストを行い、上記バルク成形体の表面の酸化層を除去した。\n\n【0093】\n\n▲1▼モノメチルトリエトキシシラン、▲2▼液相法で作製した平均粒径25nmのSiO2微粒子をメタノールで分散したもの、▲3▼水、▲4▼イソプロピルアルコールをそれぞれ用意し、▲1▼から▲4▼の各成分を用いて、ゾルゲル法にて表面処理液を調整した。モノメチルトリエトキシシランとSiO2は重量比で等量(ただし、モノメチルトリエトキシシランはSiO2換算したもの)とし、これらをあわせて15質量%の溶液(溶媒は上記メタノール+イソプロピルアルコール)となるようにした。また、モノメチルトリエトキシシランと水の比を1:2.4とし、粘度が1.3cPとなるように処理液を調整した。\n\n【0094】\n\n上記バルク成形体の表面に上記処理液を塗布し、200℃×20min熱処理を行った。得られた被膜の膜厚(破断面の電子顕微鏡観察で測定)を表4に示す。\n\n【0095】\n\n得られた磁石5個を80℃、90%の高温高湿下に100時間放置したあとの磁石の外観を調査した。なお、外観は目視で、発錆、被膜のフクレなどの異常は認められなかったものを合格とした。結果を表5に示す。\n\n【0096】\n\n【表5】\n\n\n\n【0097】\n\n(実施例C)\n\n実施例3と同様の方法で放電プラズマ焼結を行ったバルク成形体10個に対して投射材としてアランダムA♯180(新東ブレ-タ-製)を用いて、ショットブラストを行い、上記バルク成形体の表面の酸化層を除去した。\n\n【0098】\n\n蒸着装置(真空槽の内容積が2.2m3で、ステンレス製メッシュ金網で作製された円筒形バレルを回転させるとともに、ワイヤー状金属蒸着材料を溶融蒸発部に供給しながら蒸着処理が行えるもの:例えば、特開2001-32062号公報の図1と同様の構成)の円筒形バレルに磁石体を投入し、真空槽内を全圧が1.0×10-3Pa以下になるまで真空排気した後、アルゴンガスを真空槽内の全圧が1Paになるように導入した。\n\n【0099】\n\nその後、バレルの回転軸を1.5rpmで回転させながら、バイアス電圧-500Vの条件下、15分間グロー放置によるスパッタリングを行って磁石表面を清浄化した。\n\n【0100】\n\n続いて、バレルの回転軸を1.5rpmで回転させながら、上記アルゴンガス雰囲気で、バイアス電圧-100Vの条件下、蒸着材料としてアルミニウムワイヤーを用い、これを加熱してイオン化し、5分間イオンブレーティング法にてバルク成形体の表面にアルミニウム被膜を形成した。\n\n【0101】\n\n蛍光X線膜厚計で測定したアルミニウム被膜の膜厚(磁石5個の平均値)は10.5μmであった。\n\n【0102】\n\nその後、表面アルミニウム被膜を有するバルク磁石をブラスト加工装置に投入し、N2ガスからなる加圧気体とともに、投射材としてGB-AG(新東ブレ-ター製)を用い、投\n\n射圧0.2MPaにて15分間噴射して、ピーニング処理を行った。\n\n【0103】\n\n得られた磁石を80℃、90%の高温高湿下に2000時間放置したが、発錆、被膜のフクレなどの異常は認められなかった。また、得られた磁石を、嫌気性接着剤(ロックタイト366、ヘンケルジャパン製)を用いて、鋳鉄製の治具に接着し、圧縮せん断接着試験を行った結果、28.5MPaであった。この値は本接着剤の硬化後の破壊強度に相当しており、本発明によるバルク磁石は優れた接着性を有していることが分かった。\n\n【0104】\n\n【発明の効果】\n\n上述したように、本発明によると、R-Fe-B系ナノコンポジットバルク磁石の密度が向上するとともに、バルク成形体の表面に形成される空隙が少なく且つ小さくなるので、耐食性が向上する。従って、このバルク成形体に表面処理を施すことにより、従来より薄い被膜で、従来と同等以上の耐食性を有するバルク磁石が得られる。\n\n【図面の簡単な説明】\n\n【図1】本発明に好適に用いられる放電プラズマ焼結装置の構成を示す模式図である。\n\n【符号の説明】\n\n26  水冷チャンバ\n\n27  焼結ダイス\n\n28a  上部パンチ\n\n28b  下部パンチ\n\n29  特殊加圧機構\n\n30a  上部パンチ電極\n\n30b  下部パンチ電極\n\n31  特殊焼結電源\n\n32  制御装置', '【0001】\n\n技术领域\n\n本发明涉及由R-Fe-B系统的纳米复合淬火合金制成的散装磁体及其制造方法。\n\n【0002】\n\n发明背景\n\nR-Fe-B基永磁体是各种磁铁中的最高磁能产品,用于各种应用。\n\n【0003】\n\n基于RF-B基永磁体用作粘合磁体,其中通过研磨使用淬火方法制备的快速冷却合金而获得的淬火合金粉末与诸如熔融纺丝方法的快速冷却合金与粘合剂混合。然而,由于难以将淬火合金粉末的体积分数增加到80%或更高,因此磁性受到限制。\n\n【0004】\n\n散装磁体(有时称为“全致密磁体”可以被称为具有比粘合磁体的高容积骤冷合金粉末的磁体。例如,MQ2(各向异性磁体)和MQ3(各向异性磁体)可作为R-Fe-B基体磁体商购获得。这些散装磁铁是Nd作为磁阶段2Fe.14它仅具有具有B型晶体结构的硬磁相,并且在诸如热成型(例如热压)的方法中,通过高密度的淬火合金粉末制造。\n\n【0005】\n\n同时,近年来,所谓的纳米复合材料磁铁(“更换弹簧磁铁”或简单地“SP\n\n它可以称为环磁体。高性能)已经进行了进展。纳米复合磁铁是ND2Fe.14硬磁相,如B和α-Fe和铁基硼阶段(例如,Fe3B阶段和FE23B.6诸如相的软磁相是通过纳米级形成组织的磁体,并且可以获得高磁化。在本说明书中,至少ND作为硬磁相2Fe.14含有具有B型晶体结构的硬磁相,并且含有至少一种软磁相的纳米复合磁体,例如α-Fe相或铁基硼化物相,称为R-Fe-B.纳米复合磁体。基于R-Fe-B的纳米复合材料也由通过使用淬火方法如熔体纺丝制备的快速冷合金而获得的淬火合金粉末制成。另外,纳米复合体磁体不必具有淬火合金粉末,该粉末是原料的淬火合金粉末,并且末端的堆积体可以具有纳米复合材料结构。在本说明书中,最终是纳米复合磁体的淬火合金粉末可以称为“用于纳米复合磁体的淬火合金粉末”。\n\n【0006】\n\nR-Fe-B纳米复合磁体低于由MQ粉末代表的常规R-Fe-B永磁体(通常小于10原子%),因此比较它是便宜的优点。此外,在传统的R-Fe-B永久磁铁中,ND2Fe.14ND富相(即,ND2Fe.14虽然具有比B相的组成具有更高的Nd含量的相位,但是在R-Fe-B纳米复合磁体中没有这样的稀土元素含量高的相位。因为,由于耐腐蚀性磁铁本身比较优秀。因此,预期即使使用比传统的R-Fe-B基永磁体更简单,R-Fe-B纳米复合磁体也可以获得足够的耐腐蚀性。\n\n【0007】\n\n本发明要解决的问题\n\n然而,R-Fe-B纳米复合磁体的散装磁铁尚未销售。\n\n【0008】\n\n其主要原因之一是,难以使用用于纳米复合磁体的淬火合金粉末形成足够密集的散装体。在这种情况下,在制造常规R-Fe-B永磁体的过程中,上述稀土元素的相位是热成型时的液相,并且该液相有助于散装成型物体的致密化。在为了做,认为液相未在制造R-Fe-B纳米复合磁体的过程中形成。\n\n【0009】\n\n此外,即使使用用于纳米复合磁体的淬火合金粉末获得一定密度的块状成型体,也在散装成型体的表面上形成大的空隙或孔,并且将表面处理施加到散装成型体上。即使在表面上形成薄膜,也可以不充分改善耐腐蚀性。这只是从各种实验中发现它取决于空隙和孔的分布,而不是散装成型体的密度。\n\n【0010】\n\n考虑到本发明,提供了本发明的目的,并且提供了纳米复合体磁体的主要目的以及其制造方法。\n\n【0011】\n\n[解决问题的手段]\n\n根据本发明的散装磁体的制造方法是制造具有至少一种硬磁相和至少一个软磁相的纳米复合体磁体的方法,以及粒径为53μm的第一颗粒的10质量质量或者较少的特征在于它包括制备R-Fe-B基骤冷合金粉末的步骤,包括或大于或等于或大于%,以及热形成纯金属粉末的步骤。\n\n【0012】\n\n纯净的金属粉末优选包括粒径大于106μm的第二颗粒,颗粒的纵横比为60%以上的粒子优选为第二颗粒的​​数百分比0.4或更高。\n\n【0013】\n\n在一个优选的实施方案中,制备纯净金属粉末的步骤通过快速冷却合金熔融金属来包围,以及产生厚度为60μm或更大且300μm或更小的淬火合金的步骤以及步骤研磨纯净和冷合金。做。\n\n【0014】\n\n纯净金粉末的质量参照的粒度分布具有至少两个峰,并且至少两个峰优选含有至少一个峰,在106μm或更小。\n\n【0015】\n\n在一个实施方案中,散装成型体包括α-Fe相。或者,散装体可以包括铁基硼化阶段。\n\n【0016】\n\n在一个优选的实施方案中,该方法还包括对散装成型体的表面处理步骤。\n\n【0017】\n\n根据本发明的散装磁体的特征在于它通过任何上述制造方法制备。\n\n【0018】\n\n在优选实施例中,散装磁体具有堆积成型体和形成在散装成型体的表面上的涂层。涂层的厚度优选为5μm或更小。\n\n【0019】\n\n发明内容\n\n用于制备本发明的纳米复合体磁体的方法制备用于R-Fe-B纳米复合磁体的淬火合金粉末,其含有10质量%以上的粒径为53μm以上且淬火的合金粉末。它包括通过热成型获得散装成型体的方法。\n\n【0020】\n\n作为用于本发明的R-Fe-B纳米复合材料的淬火合金粉末,主要组成,至少一种选择从稀土元素(包括钇),硼或硼和碳的其他元素,铁或铁和其他过渡金属元素并且可以适当地使用稀土元素含量的含量的那些。\n\n【0021】\n\n此外,本发明中使用的用于R-Fe-B纳米复合材料的快速冷却的合金粉末使用淬火方法如熔融纺丝方法加热稀土合金的稀土合金的熔融金属。通过做制造的是优选的。优选的是,终堆磁体中的组织形成具有硬磁相的纳米复合材料结构和具有500nm或更小的平均晶粒尺寸的软磁相。\n\n【0022】\n\n最终散装磁铁中的硬磁相是ND2Fe.14具有B型晶体结构的硬磁阶段(简单地为简单的ND2Fe.14还有一个p阶段。 ,软磁相是α-Fe相和/或铁基硼相阶段(例如,Fe3B阶段和FE23B.6阶段等。\n\n【0023】\n\n这里,当通过结晶形成铁基硼化物相的材料作为软磁相时,由于致密化的难度,可以使用合金粉末的堆积成型体形成堆积成型体,因此难以减少表面上的空隙,因此优选使用含有无定形的合金粉末(例如,无定形体积%以上)。\n\n【0024】\n\n这种淬火合金粉末的组成是100-x-y问:xR.y(t是含有选自Fe或Co和Ni的至少一种元素和Fe的过渡金属元素\n\n,Q是一个具有一个元素的表,其中包含B和C的组中,并且R是至少一个稀土金属元素,其基本上不含La和Ce在稀土元素(Y)内。组成比x优选满足10原子%≤x≤30原子%,1原子%≤yZr,Nb,Mo,Hf,Ta,w,pt,pb和au选自选自Au的至少一种元素,并且还可以含有不可避免的杂质。\n\n【0025】\n\n另一方面,根据本发明可以适当地使用用于通过结晶形成α-Fe相的材料,因为α-Fe相有助于散装成型体的致密化。\n\n【0026】\n\n这种淬火合金粉末的组成是100-x-y问:xR.y(t是含有至少一个选自Fe或Co和Ni的元素和Fe的过渡金属元素,Q是选自B和C的单个元素。由至少一种稀土金属表示基本上没有La和Ce在稀土元素(包括Y)中的元件,以及组分比x和y都是3个原子%≤xZr,Nb,Mo,Hf,Ta,w,pt,pb和au选自选自Au的至少一种元素,并且还可以含有不可避免的杂质。\n\n【0027】\n\n此外,当硬磁相的体积比小时,由于电镀等优先腐蚀硬磁相,并且在硬磁相和硬磁相之间更换,以表达纳米复合材料的磁性磁铁。由于不充分获得效果,因此在纳米复合磁体中具有高体积比的纳米复合磁性(例如60%以上)显着获得本发明的效果。\n\n【0028】\n\n从上述观点来看,作为用于本发明的R-Fe-B纳米复合磁体的快速冷却合金粉末的组合物,在上述组合物中,5原子%≤X≤15原子%,5原子%≤y【0029】\n\n上述组合物具有上述组合物,最后,调节形成上述组织的纳米复合磁体的淬火合金粉末,以含有粒径为53μm或更小的第一颗粒的10质量%或更多。这是通过根据需要通过破碎和/或分类来调节粒度分布来获得的。\n\n【0030】\n\n通过含有粒径为53μm或更小的粒径为53μm或更小的10质量%或更多的颗粒,该淬料合金粉末是由散装成型体产生的,可以增加散装成型体的密度和散装成型体形成的空隙(包括孔)的分布变得均匀,并且在散装成型体的表面上形成的空隙小且小。结果,通过将表面处理施加到散装成型体上,可以获得耐腐蚀性优异的散装磁体。\n\n【0031】\n\n特别地,在根据本发明的散装磁体中使用湿表面处理方法的诸如电镀方法或电沉积涂覆方法形成涂层的情况下,涂覆加工液,因为在表面上形成的空隙散装成型体积小而小。抑制了剩余剩余剩余腐蚀性降低的问题。使用树脂涂层方法\n\n在一些情况下,抑制当残留在空隙中蒸发的溶剂时在膜中形成针孔。此外,在采用薄膜沉积方法的情况下,诸如气相沉积方法的薄膜沉积方法,因此抑制了由于散装成型体的空隙部分中的涂层破坏而在涂层中形成针孔。\n\n【0032】\n\n用于本发明的淬火合金粉末优选含有粒径大于106μm的第二颗粒,并且60%以上的颗粒的纵横比优选为第二颗粒的​​数百分比0.4或更高。以下原因如下所述。\n\n【0033】\n\n由MQ粉末表示的常规R-Fe-B型淬火合金粉末具有小于0.3的纵横比(短轴的长度/长轴长度),但在热成型过程中形成液相。确保充分密集的散装成型体。也就是说,在制造传统的R-Fe-B基体磁体中,淬火合金粉末的纵横比是原料的不是提高紧凑性的重要因素。然而,如上所述,发现用于纳米复合磁体的快速冷却的合金粉末影响纵横比的密度,因为它在热成形过程中不形成液相。\n\n【0034】\n\n因此,由于各种检查的结果,通过将粒径为106μm的粒径大于106μm的粒径的颗粒的百分比调节60%或更多粒子的纵横比,其致力于它可以提升。当粒径为0.4或更大的纵横比大于106μm的颗粒中时,在管(粉末成型体)中形成的空隙的分布变得均匀,并且在该空隙中上述第一颗粒。作为分布的结果,认为可以通过热成型获得更致密的堆积成型体。此外,更优选的是,70%或更多的第二颗粒的​​纵横比为0.4或更高。\n\n【0035】\n\n在淬火合金粉末中粒径为106μm的第二颗粒的​​纵横比JIS Z8801.在去除粒径为106μm或更小的颗粒后,使用表示颗粒形状,例如电子显微镜的装置测量各个颗粒的纵横比,并且(纵横比为0.4或更多)颗粒)从测量的颗粒的数量/总数确定。\n\n【0036】\n\n从密度的观点来看,猝灭合金粉末的平均粒径优选为300μm或更小,更优选在50μm至200μm的范围内。此外,优选的是95质量%或更多的淬火合金粉末的粒径为300μm或更小。\n\n【0037】\n\n另外,当骤冷合金粉末的质量分布的粒度分布具有至少两个峰时,其中至少一个是它们中的至少一个是106μm或更小,可以进一步改善细度。质量标准的粒度分布是JIS Z8801.用柔顺的筛子问。\n\n【0038】\n\n含有如上所述的纵横比颗粒的淬火合金粉末使用熔融纺丝方法和条带铸造方法,通过淬火产生厚度为60μm以上且300μm的淬火合金,并获得。它可以有效地生产研磨淬火合金。另外,由于粒径较大的纵横比较大,因此如果上述颗粒的上述颗粒的纵横比为0.4或更大,则为106μm或更小。粒子超过60%的颗粒(数百分比)的纵横比为0.4或更高。例如,研磨是在动力轧机装置中粉碎淬火合金直到粒径为约850μm或更小,然后研磨约150μm至约300μm的粒径。\n\n【0039】\n\n另外,可以使用气体雾化方法制造用于纳米复合材料磁体的淬火合金粉末。当使用气体雾化法从合金熔融法产生合金粉末时,通过淬火可以获得纵横比为0.4或更高的普通粉末颗粒,随后进行粉碎过程。\n\n没有必要。在气体雾化方法的情况下,优选将粉末颗粒的尺寸调节至150μm或更小,使得冷却均匀地实现,直到粉末颗粒的内部。\n\n【0040】\n\n另外,可以淬灭经受堆积成型体的形成的淬火合金粉末,或者可以适当地进行热处理以用于结晶。在热处理之前,研磨和粒度调节可能在后面。另外,可以将进行热处理的粉末混合并与不热处理的粉末混合使用。\n\n【0041】\n\n通过如上所述制备的纳米复合磁体的热形成散装合金粉末制备块状成型体。此时,可以将金属粉末(例如,Al)或无机粉末(例如,玻璃,氧化硅)与淬火合金粉末混合。\n\n【0042】\n\n作为热成型的方法,可以采用排出等离子体烧结方法,热压法等。另外,可以根据靶散装成型体的形状适当地使用压缩成型,挤出成型等。\n\n【0043】\n\n例如,可以使用图1所示的放电等离子体烧结装置来执行放电等离子体烧结方法。\n\n【0044】\n\n该装置包括水冷室26和位于其中的烧结模27和上冲头28a,用于在烧结模27中向粉末和下冲头28b施加压力。上冲头28a和下冲头28b被特殊的压力机构29压制,并且构造成使得粉末可以通过特殊烧结电源31通电。特殊的烧结电源31经由上冲头电极30a和下冲头电极30b将电力施加到模具27中的粉末,以形成放电等离子体。特殊的压力机构29和特殊烧结电源31由控制装置32控制。作为烧结模具27的材料,可以使用上冲头28a和下冲头28b,已知的已知材料,例如碳和硬质合金。\n\n【0045】\n\n在使用这种装置进行的放电等离子体烧结方法中,DC电流和脉冲电流柱被叠加,从而使用在过渡到电弧放电之前的过度电弧放电现象,在压力下效果。可以进行烧结。更具体地,脉冲电能直接插入管颗粒间隙中,并且通过火花放电瞬间产生的高温等离子体的能量用于烧结。因此,可以快速升高,易于控制原料粉末的晶粒生长。因此,由于放电等离子体烧结方法适合于在短时间内形成致密的烧结体,所以它适用于如本发明中那样生产纳米复合堆积体模塑体。\n\n【0046】\n\n如果通过这种装置将10MPa或更多的压力施加到淬火合金粉末,则可以在约400℃至850℃的烧结温度下获得高质量的堆积体模塑体。最佳压力范围根据淬火合金粉末的组成而变化,但优选在50MPa或更高的范围内和500MPa或更小的范围内。\n\n【0047】\n\n在本发明中,由于使用如上所述的快速冷却的合金粉末,密度为90%或更多的合金的块状模塑体是90%以上的密度,并且在散装的表面上形成的孔模塑体积小而小。因此,通过对如此获得的块状模塑体进行表面处理,可以获得耐腐蚀性优异的散装磁体。\n\n【0048】\n\n注意,可以使用热挤出成型方法等通过塑料加工来赋予磁各向异性。此外,可以通过对散装成型体的进一步热处理来优化磁性。此外,最终需要所需的尺寸精度\n\n为了除去散装成型体的表面上的氧化层,可以进行诸如研磨的各种加工。\n\n【0049】\n\n作为表面处理方法,可以广泛使用已知方法。通过表面处理形成的保护膜也可以使用无机材料(金属,陶瓷,无机聚合物等)或有机材料(低分子量,聚合物等)或无机有机复合材料。这些保护膜可以根据所用材料以各种方式形成。\n\n【0050】\n\n例如,金属膜是电镀方法(电解镀层和无电镀方法等)和各种薄膜沉积技术(真空蒸发,离子电镀方法,溅射,离子束法等),低SN和Zn 。可以采用浸渍和冷却以熔融熔点的熔融点冷却的方法。 The metal film is preferably formed using aluminum, titanium, nickel, copper, chromium, and alloys including these, It may be appropriately selected according to the application.\n\n【0051】\n\n陶瓷材料的膜可以使用如金属膜中的薄膜沉积技术形成,并在使用溶胶 - 凝胶法,浸渍法和喷涂方法等的情况下使用处理液或碱硅酸盐溶液等可以使用。另外,可以采用电核化电沉积方法等。\n\n【0052】\n\n可以使用各种方法形成树脂膜,例如电沉积涂层,喷涂,静电涂层,浸涂,使用有机聚合物材料的辊涂法。另外,无机聚合物材料(例如,硅树脂)也可以通过相同的方法形成。\n\n【0053】\n\n另外,可以使用低分子量有机材料(例如偶联剂)(硅烷,钛酸盐系统,铝酸盐系统,锆酸盐系统等)或苯并三唑来形成保护膜。这些低分子量有机材料可以以各种方式施用为散装成型体。\n\n【0054】\n\n另外,可以通过以各种方式沉积(沉积)微粒来形成保护膜。微粒是金属细颗粒,如Al,Zn,Ni,Cu,Fe,Co,Sn,Pb,Au,Ag,SiO2,al.2O.3,zro2,mgo,tio2金属氧化物和复合金属氧化物,如莫来石,钛酸盐,硅酸盐和锡,锡,AlN,Bn,Tic,Ticn,Tib2陶瓷微粒如聚四氟乙烯,树脂细颗粒如丙烯酸树脂,炭黑和MOS2等等。\n\n【0055】\n\n另外,为了将这些颗粒固定到散装成型体的表面上,可以根据需要使用粘合剂。作为粘合剂,铬酸,钼酸,磷酸,无机材料如盐,低分子量有机化合物,如偶联剂,可用的聚合物化合物如有机树脂等。\n\n【0056】\n\n作为将块状成型体的表面上固定细颗粒的方法,可以预先使用诸如喷射方法或浸渍方法的涂布方法,并且可以是喷涂方法或浸渍方法的涂布方法所用,或者预先形成在散装成型体的表面上的粘合剂层。可以使用机械力沉积微粒。此外,如果需要,可以进行热处理,并且细颗粒可以进一步牢固地固定到散装成型体的表面上。\n\n【0057】\n\n保护膜不仅可以在模制的堆积体中形成为新膜,而且可以通过重整散装成型体的表面来形成。可以使用与散装成型体的表面上的磁性粉末的反应。例如,磷酸处理,磷酸锌处理,磷酸锰处理,磷酸钙处理,磷酸钙处理,铬酸处理,锆酸治疗,刺血管\n\n可以提及各种化学转化处理,例如古酸处理和钼酸处理。\n\n【0058】\n\n这里,由于本发明的块状成型体中稀土元素(通常是Nd)的含量为低,即使钢领域通常使用的化学转换过程,也可以获得足够的耐腐蚀性。\n\n【0059】\n\n此外,可以通过以各种方式氧化块状成型体的表面来形成合适的厚度的氧化。这里,由于本发明中的纳米复合磁体基本上是富含稀土元素的相(通常是Nd富相),因此形成耐腐蚀性优异的氧化膜,特别是在润湿下的耐腐蚀性。可以。\n\n【0060】\n\n另外,如上所述,由于本发明的块状模塑体可以基本上不那么空隙,因此耐腐蚀性和适用于各种表面处理的优异,但是当在恶劣环境中使用时,可以执行各种密封处理进一步提高磁铁的可靠性。\n\n【0061】\n\n此外,可以适当地组合上述表面处理,例如,可以使用不同的材料形成层压膜。\n\n【0062】\n\n如上所述,根据本发明的纳米复合堆积体模塑体基本上形成在模塑体的表面上,因为与传统的MQ2和MQ3相比,稀土元素的含量基本优异。由于小薄膜是形成的,即使进一步形成薄膜,也可以获得与之前的耐腐蚀性,当涂层的厚度为5μm或更小时,其更优异,并且特别优异的效果。通过降低涂层的厚度,可以在结合到电动机等中时减小磁隙,以获得具有高能量效率的电动机。\n\n【0063】\n\n另外,当进行诸如电镀的湿表面处理时,在处理液中洗脱的纳米复合堆积体模塑体的组分量小于MQ2和MQ3磁体,因此管理和更换可以的处理液体优势也得到减少。\n\n【0064】\n\n【例子】\n\n(例A)\n\n在具有30kPa绝对压力的氩气氛中,厚度为5至15μm厚的350mm厚的铜合金冷却辊,350mm直径的铜合金冷却辊以15m / min的圆周速度旋转,和熔融纺丝方法(单辊法),ND5.5Fe.66B.18.5CO.5CR.5制备具有组合物(原子比)的淬火合金的带。\n\n【0065】\n\n由于测量所得快速冷合金薄带的晶体结构具有X射线衍射,但几乎100%的带是无定形的。\n\n【0066】\n\n使用电源轧机和销盘式磨机粉碎快速冷合金的色带后,JIS Z8801.使用基于标准的标准筛分类分类,并且如表1所示进行粒度调节,使用实施例1,2和比较例1的淬火合金粉末。\n\n【0067】\n\n【表格1】\n\n\n\n【0068】\n\n在构成每个粉末的颗粒中,用粒径为大于106μm的电子显微镜测定纵横比,并且由于获得纵横比,0.4或更高,为91%,实施例2是大约62.5%。%,对比例1为52%。\n\n【0069】\n\n实施例1和2和比较例1的样品11.78g通过以下方法是热压缩模塑,直径为20mm和5mm高形散装磁体。\n\n【0070】\n\n作为热压缩成型设备,使用图1所示的放电等离子体烧结装置的碳化物碳化物骰子和冲头。使用了1个。\n\n【0071】\n\n将合金粉末加入模具中,在放电等离子体烧结装置中设置,并且该装置的内部还原为1Pa或更小,然后在196MPa的压力下进行排出等离子体烧结(脉冲冷凝烧结)。\n\n【0072】\n\n另外,排出等离子体烧结时的温度是碳化物碳化物骰子中的孔,并插入并测量热电偶。\n\n【0073】\n\n由于脉冲传导引起的升温速率为40℃/米,然后在670℃下保持5分钟,然后停止通电并使其冷却。将得到的堆积成型体致密于94%的合金成型密度的密度。\n\n【0074】\n\n上述10个块状模塑物是桶并在表面上除去氧化层,然后用直径为2mm的钢球用耐热的塑料桶夹具。在浸入0.2mol / L硝酸钠和1.5Vol%硫酸的处理溶液以5rpm的转速下浸渍后,将桶浸入30℃的液体温度下4分钟,然后用超声波清洗离子交换的水为1μs/ cm或更小30秒。之后,我开始电镀。\n\n【0075】\n\n此后,硫酸镍,6水合物240g / L,氯化镍,6水合物45g / L,30g / L硼酸,2-丁炔-1,4二醇,为闪亮,0.2g / L,糖精1g / L使用pH = 4.2(用碳酸镍调节),在液体温度为50℃,电流密度0.2a / dm的镀玻璃2电解电镀100分钟,形成镀镍膜\n\n但是,将磁铁从枪管中除去并用水洗涤。通过用荧光X射线膜厚度计测量,在表2中示出了镀膜的膜厚度(磁体的5平均值)。\n\n【0076】\n\n研究了磁体在高温下留下10的磁体80℃的高湿度下90%以保持500小时。此外,外观在视觉上,通过,未观察到诸如生锈和涂层幸存的异常。结果显示在表2中。\n\n【0077】\n\n从表2中明显看出,与使用少量53颗粒的合金粉末相比,含有53μm或更小的含有53μm或更小的含有53μm或更小的颗粒的含有10质量%或更多颗粒的耐腐蚀性优异μm或更少。识别。\n\n【0078】\n\n特别地,实施例1中使用的合金粉末具有大部分颗粒的粒径为粒径为106μm的颗粒的纵横比,并且在粒径分布的粒度分布中进一步具有两个峰值。,一个峰值为106μm或更小,结果,所示的耐腐蚀性较小,因为在散装成型体的表面上形成的孔较小且小。\n\n【0079】\n\n[表2]\n\n\n\n【0080】\n\n此外,使用实施例1的磁体的BH示踪剂评估高温高湿度的高温高湿度之前和高湿度之前和之后的磁体特性。结果显示在表3中。由于忽略了高温和高湿度,磁性几乎没有降低。\n\n【0081】\n\n[表3]\n\n\n\n【0082】\n\n(例b)\n\nND:8.9原子%,B:12.6原子%,Ti:3.0原子%,C:4原子%,Nb:1原子%,加入5kg原料中混合到Ar气氛中剩余Fe的合金组合物通过高频感应加热获得50kPa,合金熔融金属获得。\n\n【0083】\n\n使用带材铸造方法获得淬火合金。具体地,通过倾斜坩埚,在纯铜冷却辊(直径250mm的直径)上供应合金熔融金属,其通过斜槽旋转辊表面圆周速度14m / sec,并且合金熔融金属淬火。另外,当向辊供应熔融金属时,熔融金属被分成两个区域,然后当时熔融金属的供应速率调节坩埚的倾斜角度为每种制品1.3千克/分钟。它被调整了。\n\n【0084】\n\n所得快速冷的合金的平均厚度为85μm,其标准偏差为13μm。在研磨850μm或更小的快速冷却合金的一部分后,将粉末供应到在780℃下以780℃保持在箍带炉的炉子,皮带进给速度为100mm / min。作为a通过以速度引入速度处理热处理的磁粉晶体结构的结果2Fe.14B和FE23B.6它由阶段和α-Fe阶段组成。\n\n【0085】\n\n接下来,在使用上述快速电流销盘式磨机粉碎后,JIS Z8801.使用标准筛进行分类,然后调节至具有粒度分布的磁粉,如表4所示。\n\n【0086】\n\n表4.\n\n\n\n【0087】\n\n实施例3和比较例2的样品11.78g以下列方法是热压缩成型,并且直径为20mm和5mm高度(瞄准尺寸)的圆柱形堆积磁体。\n\n【0088】\n\n作为热压缩成型设备,使用导电等离子体烧结装置,并使用稠碳碳化物骰子和冲头。\n\n【0089】\n\n将粉末加入模具中,并设定放电等离子体烧结装置,并且该装置的内部降低至1Pa或更小,并且在300MPa的压力下进行放电等离子体烧结(脉冲导通烧结)。\n\n【0090】\n\n另外,排出等离子体烧结时的温度是碳化物碳化物骰子中的孔,并插入并测量热电偶。\n\n【0091】\n\n由于脉冲传导引起的升温速率为100℃/米,然后在780℃下保持5分钟,然后停止激励并使其冷却。\n\n【0092】\n\n使用Arlandm#180(由新的Toho断路器制造)进行喷射爆炸,作为10个块状模制品的投影材料,除去散装成型体的表面上的氧化物层。\n\n【0093】\n\n▲1▼单甲基三氧基硅烷,▲2▼SiO 2,平均粒径为25nm的液相法制备2将颗粒分散在甲醇,▲3▼水,▲4▼异丙醇分别制备,并通过溶胶 - 凝胶法调节表面处理溶液,每个溶液法使用{圆圈(1)}}至{圆圈( 1)}。单甲基三乙氧西硅烷和SiO.2相当于重量比(但单甲基三乙氧基硅烷是SiO2作为转换的东西,溶液为15质量%(溶剂是上述甲醇+异丙醇)。此外,将处理液调节至1:2.4,单甲基三乙氧基硅烷与1:2.4的比例和1.3cc的粘度。\n\n【0094】\n\n将处理液施加到堆积成型体的表面,并进行200℃×20分钟的热处理。表4显示所得涂层的膜厚度(通过裂缝表面的电子显微镜测量)。\n\n【0095】\n\n研究了在高温和高湿度下获得100小时的50小时在得到的90%得到的90%获得的磁体之后的磁体的外观。此外,外观在视觉上,通过,未观察到诸如生锈和涂层幸存的异常。结果显示在表5中。\n\n【0096】\n\n[表5]\n\n\n\n【0097】\n\n(示例c)\n\n使用Arlandm A#180(由新的东方Brata制造)作为投影材料作为投影材料而以与实施例3中相同的方式进行排出的等离子体,以及表面的氧化层来执行除去散装成型体。\n\n【0098】\n\n气相沉积设备(真空罐​​的内部体积为2.2米3除了旋转由不锈钢网格金网产生的圆柱形筒之外,可以在例如将线状金属气相沉积材料供应到熔体蒸发单元的同时进行气相沉积工艺,例如,在图1的情况下,在相同配置的圆柱形筒中,引入磁体,真空罐中的总压力为1.0×10。-3在抽空之前直到PA或更小,将真空罐中的总压力引入1Pa。\n\n【0099】\n\n此后,在1.5rpm下旋转桶的旋转轴线,通过发光将溅射15分钟进行15分钟,以清洁磁体表面。\n\n【0100】\n\n随后,在1.5RPM的旋转轴的同时,在偏置电压-100V的条件下,使用作为气相沉积材料的铝线,将其加热并电离5分钟。在铝涂层形成铝涂层通过该方法散装成型体的表面。\n\n【0101】\n\n通过荧光X射线膜厚计测量的铝涂层(平均值为5磁体的薄膜厚度为10.5μm。\n\n【0102】\n\n此后,将具有表面铝涂层的散装磁铁引入喷砂装置中,N2使用GB-AG(新的东部断路器)作为投影材料,具有由气体组成的压力,\n\n在0.2MPa的入射压力下进行输给工艺15分钟。\n\n【0103】\n\n将得到的磁铁在高温和高湿度下留下90%高温和90%,但观察到诸如生锈和涂层绒毛的异常。而且,使用厌氧粘合剂(岩石日本制造的岩石紧密366)粘附所获得的磁铁粘附到铸铁夹具上,并且进行了压缩剪切粘附试验28.5MPa。该值对应于固化粘合剂后的断裂强度,并且已发现根据本发明的散装磁体具有优异的粘附性。\n\n【0104】\n\n【发明效果】\n\n如上所述,根据本发明,改善了R-Fe-B基纳米复合体磁体的密度,并且在散装成型体的表面上形成的空隙减小并降低,因此耐腐蚀性得到改善。因此,通过对该堆积成型体进行进行,块磁铁具有等于或高于传统的耐腐蚀性是薄膜。\n\n[简要描述;简介]\n\n【图1】图3是表示在本发明中适合使用的放电等离子体烧结装置的结构的示意图。\n\n[标志的说明]\n\n26水冷却室\n\n27烧结骰子\n\n28A顶级拳\n\n28b下拳\n\n29特殊加压机制\n\n30A上冲头电极\n\n30B下冲头电极\n\n31种特种烧结电源\n\n32控制设备');
INSERT INTO `os_patent_instruction_text` VALUES (12932, 22761, '【技術分野】\n\n【0001】\n\n本発明は、希土類磁石およびその製造方法に関する。\n\n【背景技術】\n\n【0002】\n\n現在、希土類磁石としては、サマリウム·コバルト系磁石とネオジム·鉄·硼素系磁石の二種類が各分野で広く用いられている。なかでもネオジム·鉄·硼素系磁石は、種々の磁石の中で最も高い磁気エネルギー積を示し、価格も比較的安いため、各種電子機器へ積極的に採用されている。\n\n【0003】\n\nネオジム·鉄·硼素系磁石は、Nd2Fe14B型結晶を主相とする磁石であるが、より一般的に「R-T-B系磁石」と称される場合がある。ここで、Rは希土類元素および/またはY(イットリウム)、TはFeを主とするNiやCoで代表される遷移金属元素、Bは硼素である。ただし、Bの一部は、C、N、Al、Si、および/またはPなどの元\n\n素によって置換され得るため、本明細書では、B、C、N、Al、Si、およびPからなる群から選択された少なくとも1種の元素を「Q」と表記し、「ネオジム·鉄·硼素系磁石」と称されている希土類磁石を広く「R-T-Q系希土類磁石」と記載する。R-T-Q系希土類磁石では、R2T14Q結晶粒が主相を構成している。\n\n【0004】\n\nR-T-Q系希土類磁石用原料合金の粉末は、当該原料合金の粗粉砕を行う第1粉砕工程と、原料合金の微粉砕を行う第2粉砕工程とを含む方法によって作製されることが多い。例えば、第1粉砕工程では水素脆化処理によって原料合金を数百μm以下のサイズに粗く粉砕した後、第2粉砕工程では、粗粉砕された原料合金(粗粉砕粉)をジェットミル粉砕装置などによって平均粒径が数μm程度のサイズに細かく粉砕する。\n\n【0005】\n\n磁石用原料合金自体の作製方法には大きく分けて2種類ある。第1の方法は、所定組成の合金溶湯を鋳型に入れ、比較的ゆっくりと冷却するインゴット鋳造法である。第2の方法は、所定組成の合金溶湯を単ロール、双ロール、回転ディスク、または回転円筒鋳型等に接触させて急速に冷却し、合金溶湯からインゴット合金よりも薄い凝固合金を作製するストリップキャスト法や遠心鋳造法に代表される急冷法である。\n\n【0006】\n\nこの急冷法による場合、合金溶湯の冷却速度は、例えば101℃/秒以上104℃/秒以下の範囲にある。そして、急冷法によって作製された急冷合金の厚さは、0.03mm以上10mm以下の範囲にある。合金溶湯は冷却ロールの接触した面(ロール接触面)から凝固し、ロール接触面から厚さ方向に結晶が柱状(針状)に成長してゆく。その結果、上記急冷合金は、短軸方向サイズが3μm以上10μm以下で長軸方向サイズが10μm以上300μm以下のR2T14Q結晶相と、R2T14Q結晶相の粒界に分散して存在するRリッチ相(希土類元素Rの濃度が相対的に高い相)とを含有する微細結晶組織を持つにいたる。Rリッチ相は希土類元素Rの濃度が比較的に高い非磁性相であり、その厚さ(粒界の幅に相当する)は10μm以下である。\n\n【0007】\n\n急冷合金は、従来のインゴット鋳造法(金型鋳造法)によって作製された合金(インゴット合金)に比較して、相対的に短時間で冷却されているため、組織が微細化され、結晶粒径が小さい。また、結晶粒が微細に分散して粒界の面積が広く、Rリッチ相は粒界内を薄く広がっているため、Rリッチ相の分散性にも優れ、焼結性が向上する。このため、特性の優れたR-T-Q系希土類焼結磁石を製造する場合には、その原料として、急冷合金が使用されるようになってきている。\n\n【0008】\n\n希土類合金(特に急冷合金)に水素ガスをいったん吸蔵させ、いわゆる水素粉砕処理によって粗粉砕を行う場合(本明細書では、このような粉砕方法を「水素脆化処理」と称する)、粒界に位置するRリッチ相が水素と反応し、膨張するため、Rリッチ相の部分(粒界部分)から割れる傾向にある。そのため、希土類合金を水素粉砕することによって得られた粉末の粒子表面にはRリッチ相が現われやすくなる。また、急冷合金の場合は、Rリッチ相が微細化されており、その分散性も高いため、水素粉砕粉の表面にはRリッチ相が特に露出しやすい。\n\n【0009】\n\n上記の水素脆化処理による粉砕方法は、例えば米国特許出願09/503,738に開示されており、これをここに援用する。\n\n【0010】\n\nこのようなR-T-Q系希土類磁石の保磁力を高めるため、希土類Rの一部をDy、Tb、および/またはHoで置換する技術が知られている。なお、本明細書では、Dy、Tb、およびHoからなる群から選択された少なくとも1種の元素をRHと表記することとする。\n\n【発明の開示】\n\n【発明が解決しようとする課題】\n\n【0011】\n\nしかしながら、R-T-Q系希土類磁石用原料合金に添加したRHは、合金溶湯の急冷後、主相であるR2T14Q相にだけではなく、粒界相にもほぼ一様に存在することになる。このような粒界相に存在するRHは、保磁力の向上に寄与しないという問題がある。\n\n【0012】\n\nまた、粒界にRHが多く存在することにより焼結性が低下するとう問題もある。この問題は、原料合金に占めるRHの割合が1.5原子%以上の場合に大きくなり、この割合が2.0原子%以上になると顕著なものとなる。\n\n【0013】\n\nまた、急冷凝固合金の粒界相部分は、水素脆化処理および微粉砕工程によって超微粉(粒径:1μm以下)となりやすく、かりに微粉末にならなかったとしても、露出した粉末表面を構成しやすい。超微粉は、酸化や発火の問題を引き起こしやすく、また、焼結にも悪影響を与えるため、粉砕工程中に除去される。粒径1μm以上の粉末粒子の表面に露出している希土類は酸化されやすく、また、RHはNdやPrよりも酸化されやすいため、合金の粒界相中に存在したRHは、安定な酸化物を形成してしまい、主相の希土類元素Rと置換することなく、粒界相に偏析した状態を維持しやすい。\n\n【0014】\n\n以上のことから、急冷合金中のRHのうち、その粒界相に存在する部分は保磁力向上のために有効利用されないという問題がある。RHは、希少な元素であり、価格も高いため、資源の有効利用や製造コストの低下という観点から、上述のような無駄を排除することが強く求められている。\n\n【0015】\n\n特開昭61-253805号公報は、Dyを酸化物の形態で添加し、焼結時に主相の表面に拡散させることにより、小量のDyで高い保磁力を得る技術を開示している。しかし、この技術によれば、保磁力に寄与しないDy酸化物が粒界相に残存するため、Dyの使用量を充分に低減することはできない。\n\n【0016】\n\n特開平3-236202号公報は、Dyに加えてSnを添加することにより、粒界相に存在するDyを主相へ濃縮する技術を開示している。しかし、この技術によれば、磁性に寄与しないSnの存在によって主相の存在比率が低下し、飽和磁化が低下するという問題がある。また、Dyが酸化物として粒界相に残存してしまうため、Dyを主相へ濃縮する効果は小さい。\n\n【0017】\n\nさらに、Dy、Tb、Ho等の重希土類元素を用いることなく、Al、Cu、Cr、Ga、Nb、Mo、V等を添加することによって保磁力を向上させることも従来から提案されてきたが、いずれの元素添加も磁性に寄与しない相の生成を招くため、飽和磁化が低下したり、主相そのものの磁化が低下したりするという問題があった。\n\n【0018】\n\nなお、特開平5-33076号公報には、合金鋳塊に対して、400℃以上900℃以下の熱処理を施すことにより、主相結晶の配向方向を特定の方位に向ける技術を開示している。\n\n【0019】\n\n特開平8-264363号公報は、ストリップキャスト法で製造した合金に対して800℃以上1100℃以下の温度で熱処理を施した後、粉砕後の粒度分布を改善することにより、磁気特性を向上する技術を開示している。しかし、このような温度で熱処理を行うと、ストリップキャスト法の利点である微細組織が失われるため、粉末の粒度分布が同じ場合、保磁力は低下する。また、焼結性も低下すると考えられる。\n\n【0020】\n\n特開平10-36949号は、ストリップキャスト法で合金溶湯を冷却する際、合金温\n\n度が800℃から600℃に低下する温度領域では、冷却速度を毎分1℃以下に制限し、徐冷を行う技術を開示している。この方法によれば、主相の比率が高まり、焼結磁石の残留磁化が向上することと記載されているが、保磁力の向上については何も記載していない。\n\n【0021】\n\n本発明者の実験によると、特に合金溶湯を急冷することによって急冷凝固合金を作製する場合、元素RHが粒界相に多く存在するということがわかった。これは、元素RHが主相における希土類元素Rの格子位置(サイト)に収まる前に溶湯の凝固プロセスが完了してしまうために生じる現象であると思われる。従って、ストリップキャスト法などによって作製した急冷凝固合金を微粉砕する前に水素脆化処理を行うと、粒界相に多く存在するRHが無駄に失われ、RHの利用効率がいっそう低下してしまうという問題がある。また、粒界相系合金に含まれるRHが多くなると、焼結性が低下するため、焼結温度を上昇させる必要がある。\n\n【0022】\n\n本発明はかかる諸点に鑑みてなされたものであり、その主な目的は、Dy、Tb、およびHoを有効に活用して、保磁力を効果的に向上させたR-Fe-Q系希土類磁石を提供することにある。\n\n【0023】\n\n本発明の他の目的は、R-Fe-Q系希土類磁石用原料合金およびその粉末の製造方法、ならびに当該合金粉末を用いた焼結磁石の製造方法を提供することにある。\n\n【課題を解決するための手段】\n\n【0024】\n\n本発明によるR-T-Q系希土類磁石は、主相としてR2T14Q相(Rは希土類元素、Tは遷移金属元素、QはB、C、N、Al、Si、およびPからなる群から選択された少なくとも1種の元素)を含有するR-T-Q系希土類永久磁石であって、希土類元素として、NdおよびPrからなる群から選択された少なくとも1種のRL、ならびに、Dy、Tb、およびHoからなる群から選択された少なくとも1種のRHを含有し、前記RHは、含有希土類元素全体の10原子%以上を占め、しかも、R2T14Q相に含まれるRHの原子数比率が含有希土類元素全体に占めるRHの原子数比率より大きい。\n\n【0025】\n\nある好ましい実施形態において、R2T14Q相に含まれるRHの原子数比率は含有希土類元素全体に占めるRHの原子数比率の1.1倍より大きい。\n\n【0026】\n\nある好ましい実施形態において、希土類元素Rは全体の11原子%以上17原子%以下、遷移金属元素Tは全体の75原子%以上84原子%以下、元素Qは全体の5原子%以上8原子%以下である。\n\n【0027】\n\nある好ましい実施形態において、Ti、V、Cr、Mn、Ni、Cu、Zn、Ga、Zr、Nb、Mo、In、Sn、Hf、Ta、W、およびPbからなる群から選択された少なくとも1種の添加元素Mを含有する。\n\n【0028】\n\n本発明によるR-T-Q系希土類磁石用原料合金は、主相としてR2T14Q相(Rは希土類元素、Tは遷移金属元素、QはB、C、N、Al、Si、およびPからなる群から選択された少なくとも1種の元素)を含有するR-T-Q系希土類永久磁石用原料合金であって、希土類元素として、NdおよびPrからなる群から選択された少なくとも1種のRL、ならびに、Dy、Tb、およびHoからなる群から選択された少なくとも1種のRHを含有し、R2T14Q相は、短軸方向サイズが3μm以上10μm以下で長軸方向サイズが10μm以上300μm以下の針状結晶であり、前記RHは、含有希土類元素全体の10原子%以上を占め、しかも、R2T14Q相におけるRHの濃度がR2T14Q相以外の相におけるRHの濃度よりも高い。この原料合金は、全体の80体積%以上のR2T14Q相を含ん\n\nでいることが好ましい。\n\n【0029】\n\n本発明によるR-T-Q系希土類磁石用原料合金の製造方法は、R-T-Q系希土類合金(Rは希土類元素、Tは遷移金属元素、QはB、C、N、Al、Si、およびPからなる群から選択された少なくとも1種の元素)であって、希土類元素Rとして、NdおよびPrからなる群から選択された少なくとも1種のRLと、Dy、Tb、およびHoからなる群から選択された少なくとも1種のRHとを含有する合金の溶湯を用意する工程と、前記合金の溶湯を急冷して、凝固合金を作製する冷却工程と、前記急冷凝固合金を400℃以上800℃未満の温度範囲で5分以上12時間以下保持する熱処理工程とを包含する。\n\n【0030】\n\nある好ましい実施形態において、前記冷却工程は、回転する冷却ロールによって前記合金の溶湯を冷却する工程を包含する。\n\n【0031】\n\nある好ましい実施形態において、前記冷却工程は、前記合金の溶湯を101℃/秒以上104℃/秒以下の冷却速度で冷却する工程を包含する。\n\n【0032】\n\nある好ましい実施形態において、前記冷却工程は、ストリップキャスト法によって行う。\n\n【0033】\n\n本発明によるR-T-Q系希土類磁石用原料合金粉末の製造方法は、上記いずれかの製造方法によって製造されたR-T-Q系希土類磁石用原料合金を水素脆化法によって脆化させる工程と、前記脆化されたR-T-Q系希土類磁石用原料合金を粉砕する工程とを包含する。\n\n【0034】\n\nある好ましい実施形態において、前記R-T-Q系希土類磁石用原料合金を粉砕する工程では、不活性ガスの高速気流を用いて前記R-T-Q系希土類磁石の微粉砕を実行する。\n\n【0035】\n\nある好ましい実施形態において、前記酸素の濃度は0.05体積%以上3体積%以下に調節されている。\n\n【0036】\n\n本発明による焼結磁石の製造方法は、上記いずれかに記載の製造方法によって製造されたR-T-Q系希土類磁石用原料合金粉末の成形体を作製する工程と、前記成形体を焼結する工程とを包含する。\n\n【0037】\n\nある好ましい実施形態において、前記R-T-Q系希土類磁石用原料合金粉末は、希土類元素Rの含有量が異なる複数種類の原料合金粉末から構成されている。\n\n【発明の効果】\n\n【0038】\n\n本発明によれば、保磁力向上目的で添加したDyなどの重希土類元素RHのうち、粒界部分に位置するRHを比較的低温の熱処理で主相中に濃縮するとともに、RHの酸化による粒界相への再分布を抑制することにより、希少な重希土類元素RHを無駄なく有効に活用して保磁力を効果的に向上させることが可能である。\n\n【発明を実施するための最良の形態】\n\n【0039】\n\n本発明では、まず、R-T-Q系希土類合金(Rは希土類元素、Tは遷移金属元素、QはB、C、N、Al、Si、およびPからなる群から選択された少なくとも1種の元素)の溶湯を用意する。このR-T-Q系希土類合金は、希土類元素Rとして、NdおよびPrからなる群から選択された少なくとも1種のRLと、Dy、Tb、およびHoからなる群から選択された少なくとも1種のRHとを含有している。次に、上記組成の合金溶湯を\n\n急冷して急冷凝固合金を作製する。\n\n【0040】\n\n本発明者は、このような急冷凝固合金を400℃以上800℃未満の温度範囲で5分以上12時間以下のあいだ保持することにより、急冷凝固合金の粒界相中に位置したRHを主相へ移動させ、主相に濃縮できることを見出し、本発明を想到するに到った。\n\n【0041】\n\n本発明者の実験によると、400℃以上800℃未満という比較的低い温度範囲でRHを粒界相から主相へ移動させるには、急冷凝固合金の組織構造が微細であることが必要である。そのような微細な組織構造をもつ急冷凝固合金は、ストリップキャスト法などの急冷法により、合金溶湯を101℃/秒以上104℃/秒以下の速度で冷却して作製することが好ましい。急冷速度は、102℃/秒以上であることが更に好ましい。なお、ストリップキャスト法による急冷合金の作製方法は、米国特許5,383,978に開示されており、これをここに援用する。\n\n【0042】\n\n従来、インゴット法で作製された合金に対しては、高温で長時間の熱処理を施すことにより、合金中に存在する不要なα-Feの量を低減することが試みられていた。しかし、ストリップキャスト法などの急冷法で作製した合金は、α-Feをほとんど含んでおらず、そのような熱処理は不要であり、また、急冷合金はインゴット合金に比べて結晶組織が微細であることが利点であるため、結晶組織の粗大化を引き起こす可能性のある熱処理を急冷合金に施すことは好ましくないとの技術常識が存在していた。\n\n【0043】\n\n本発明者は、このような技術常識にとらわれることなく、適切な温度範囲で熱処理を行い、そのような熱処理によれば、粒界に存在していたRHを主相に濃縮し、保磁力を効率的に向上させ得ることを見出した。\n\n【0044】\n\nまた、本発明者の実験によると、保磁力の向上のためには、上記急冷凝固合金を粉砕するに際して雰囲気の酸素濃度を適切に制御することが極めて重要であることもわかった。特に、微粉砕工程の前に水素脆化処理を行う場合、粉末表面に粒界相部分が露出しやすいため、微粉砕工程を不活性ガス中で行い、しかも、不活性ガス中の酸素濃度を1体積%以下に調節することが好ましい。雰囲気ガス中の酸素濃度が1体積%を超えて高くなりすぎると、微粉砕工程中に粉末粒子が酸化され、希土類元素の一部が酸化物の生成に消費されてしまう。希土類磁石用原料合金粉末中において磁性に寄与しない希土類酸化物が多く生成されると、主相であるR2T14Q系結晶相の存在比率が低下するため、磁石特性が劣化することになる。また、粒界でRHの酸化物が生成されやすくなり、主相中のRHの濃度が低下する。\n\n【0045】\n\nこのような微粉砕は、ジェットミル、アトライタ、ボールミルなどの粉砕装置を用いて行うことができる。なお、ジェットミルによる粉砕は、米国出願09/851,423に開示されており、これをここに援用する。\n\n【0046】\n\n以下、本発明の好ましい実施形態を説明する。\n\n【0047】\n\nまず、R-T-Q系希土類合金の溶湯を用意する。希土類元素Rとして、NdおよびPrからなる群から選択された少なくとも1種のRLと、Dy、Tb、およびHoからなる群から選択された少なくとも1種のRHとを含有している。ここで、充分な保磁力向上効果を得るため、希土類元素全体の中に占めるRHの原子数比率(モル比)を10%以上に設定する。\n\n【0048】\n\n好ましい実施形態において、希土類元素Rの含有量は、合金全体の11原子%以上17原子%以下であり、保磁力向上に寄与するRHは、希土類元素R全体の10原子%以上を\n\n占める。\n\n【0049】\n\n遷移金属元素Tは、Feを主成分(T全体の50原子%以上)とし、その残部はCoおよび/またはNiなどの遷移金属元素を含んでいてもよい。遷移金属元素Tの含有量は、合金全体の75原子%以上84原子%以下である。\n\n【0050】\n\n元素Qは、Bを主成分として含み、正方晶のNd2Fe14B結晶構造中のB(硼素)と置換し得る元素であるC、N、Al、Si、およびPからなる群から選択された少なくとも1種を含んでいても良い。元素Qの含有量は、合金全体の5原子%以上8原子%以下である。\n\n【0051】\n\n合金には、上記主要元素のほかに、Ti、V、Cr、Mn、Ni、Cu、Zn、Ga、Zr、Nb、Mo、In、Sn、Hf、Ta、W、およびPbからなる群から選択された少なくとも1種の添加元素Mが添加されていてもよい。\n\n【0052】\n\n上記組成の原料合金の溶湯を、ストリップキャスト装置の冷却ロールの表面と接触させることにより、急冷凝固させる。冷却ロールの回転速度(表面周速度)の好ましい範囲は0.3m/秒以上10m/秒以下である。これにより、合金の溶湯を101℃/秒以上104℃/秒以下の冷却速度で急冷することができる。\n\n【0053】\n\nこのようにして作製された急冷合金(ストリップキャスト合金)中には、主相としてR2T14Q相(Rは希土類元素、Tは遷移金属元素、QはB、C、N、Al、Si、およびPからなる群から選択された少なくとも1種の元素)が形成されている。R2T14Q相は、短軸方向サイズが3μm以上10μm以下であり、長軸方向サイズが10μm以上300μm以下の針状結晶である。急冷直後の状態(as-spun)では、R2T14Q相におけるRHの濃度がR2T14Q相以外の相(粒界相など)におけるRHの濃度と略同レベルにある。\n\n【0054】\n\n次に、ストリップキャスト法で得られた急冷凝固合金に対して、400℃以上800℃未満の温度範囲で5分以上12時間以下保持する熱処理工程を行う。熱処理の好ましい温度範囲は400℃以上700℃以下、より好ましい温度範囲は500℃以上650℃以下である。この熱処理は、いったん元素の拡散が生じない温度(例えば300℃程度)まで冷却した原料合金を更に急冷装置とは別の炉で加熱することによって行うことが好ましい。\n\n【0055】\n\n上記熱処理を施すことにより、粒界相部分に存在したRHは、主相であるR2T14Q相に移動し、R2T14Q相中に濃縮される。その結果、R2T14Q相におけるRHの濃度は、R2T14Q相以外の相におけるRHの濃度よりも高い合金が得られる。\n\n【0056】\n\n次に、上記熱処理後の合金を水素脆化法によって脆化させた後、ジェットミル装置などの粉砕機を用いて粉砕し、微粉末化する。得られた乾式粉末の平均粒径(F.S.S.S.粒径)は、例えば3.0〜4.0μmである。ジェットミル装置では、所定量の酸素が導入された不活性ガスの高速気流を用いて原料合金を粉砕する。不活性ガス中の酸素濃度は1体積%以下に調節することが好ましい。より好ましい酸素濃度は0.1体積%以下である。\n\n【0057】\n\n本発明において、このように粉砕時の雰囲気中酸素濃度を制限する理由は、粒界相から主相へ移動させたRHが酸化によって再び粒界相部分に移動·析出しないようにするためである。粉末中に酸素が多く含まれると、Dy、Tb、Hoなどの重希土類元素RHは、酸素と結合してより安定な酸化物を生成する傾向がある。本発明で用いる合金組織では、\n\n酸素は主相中よりも粒界相に多く分布するため、主相中のRHは再び粒界相へ拡散し、そこで酸化物生成に消費されるものと考えられる。このようにして主相中からRHが流出すると、保磁力の十分な向上を実現できないため、粉砕工程および次に説明する焼結工程では、粉末の酸化を適切に抑制することが望ましい。\n\n【0058】\n\n次に、粉体プレス装置を用い、上記粉末を配向磁界中で圧縮し、所望の形状に成形する。こうして得られた粉末成形体を10-4Pa以上106Pa以下の不活性ガス雰囲気下で焼結する。このように酸素濃度を所定レベル以下に制限した雰囲気中にて焼結工程を実行することにより、焼結体(焼結磁石)に含まれる酸素の濃度を0.3質量%以下にすることが望ましい。\n\n【0059】\n\n(実施例)\n\nまず、質量比率で22%Nd-10%Dy-0.25%Al-0.05%Cu-1.0%B-残部Feの組成を有する合金の溶湯をストリップキャスト法で急冷することにより、上記組成の急冷凝固合金(合金A)を作製した。また、比較例として、インゴット法で合金(合金B)を作製した。図1および図2は、それぞれ、合金AおよびBの組織を示す模式図である。添付の図面では、Dyがドットとして模式的に図示されている。図1に示すように、合金AではDyが主相および粒界相に一様に存在している。図1および図2の対比からわかるように、粒界相に存在するDyの量は、合金Bよりも合金Aの場合の方が多い。\n\n【0060】\n\n次に、これらの合金AおよびBに対して、600℃で1時間の熱処理をAr雰囲気中で行った。熱処理前後における上記合金の組織を、それぞれ、図3および図4に示す。図3および図4に示すように、合金Aでは、粒界相に存在するDyの濃度が低下している。これは、粒界相に存在したDyが上記熱処理によって主相へ移動し、主相に濃縮されたためである。\n\n【0061】\n\n参考のため、合金Aに対して、800℃で1時間の熱処理をAr雰囲気中で行った。この場合、図5に示すように、Dyは粒界相から主相へ移動し、主相に濃縮されているが、主相を構成する結晶粒が幾分大きくなっている。\n\n【0062】\n\n次に、上記合金に対して水素脆化処理(粗粉砕)を施した後、ジェットミル装置を用いた気流式微粉砕を行い、合金粉末を作製した。ジェットミル装置内の粉砕雰囲気は窒素ガスであり、粉砕雰囲気中の酸素濃度は0.1体積%以下に調節した。その後、粉末プレス装置を用い、上記合金粉末を配向磁界中で圧縮成形し、合金粉末の成形体を作製した。その後、粉末成形体に対して、真空焼結および時効処理を行い、焼結磁石を作製した。\n\n【0063】\n\n図6は、合金Aの粉末から作製した焼結磁石の組織を示している。図からわかるように、Dyは主相中に濃縮された状態のままである。\n\n【0064】\n\n一方、比較例として、600℃で1時間の熱処理を省略した合金Aから作製した焼結磁石の組織を図7に示す。この図からわかるように、粒界相に酸化物が生成されている。この酸化物中には酸化したDyが比較的多く存在しており、その分、主相中のDy濃度が低下している。\n\n【0065】\n\n表1は、600℃で1時間の熱処理を行った合金Aに含まれる各元素について、以下の各段階における合金の組成比率(質量比)を示している。\n\n·水素脆化処理前の原料合金\n\n·ジェットミル装置による微粉砕工程直後の合金粉末\n\n·焼結工程終了後の焼結体\n\n【0066】\n\n【表1】\n\n\n\n【0067】\n\n表1から、粉砕前よりも微粉砕後および焼結後の状態でDyの比率が増加していることがわかる。これは、微粉砕工程中に原料合金の粒界相が超微粉末粒子となって粉末外に除去されたため、粒界相に位置していたNdやPrの一部が消失したのに対し、粒界相から主相に濃縮されたDyは、そのような消失を免れたため、相対的に含有比率が向上したことを意味している。\n\n【0068】\n\n表1に示される焼結体の磁気特性は、表2に示す通りであった。\n\n【0069】\n\n【表2】\n\n\n\n【0070】\n\nこの焼結体における主相中の希土類元素の構成比と、焼結体全体における希土類元素の構成比を表3に示す。\n\n【0071】\n\n【表3】\n\n\n\n【0072】\n\nここで、主相に含まれる希土類元素中において、Dyの占める原子数比率をNmとし、焼結磁石全体に含まれる希土類元素中において、Dyの占める原子数比率をNtとする。表3に示す例では、Nm/Ntが1.17であり、Dyが主相に濃縮されていることがわかる。このようにNm/Ntが1.15以上となることが好ましい。\n\n【0073】\n\nなお、主相におけるDyの原子数比率(Nm)は、EPMAによる定量分析で得た値であり、焼結磁石全体に占めるDyの原子数比率(Nt)は、化学分析の結果得られた値である。\n\n【0074】\n\n以下に示す表4は、600℃で1時間の熱処理を行わなかった合金A(比較例)について、以下の各段階における合金の組成比率(質量比)を示している。\n\n·水素脆化処理前の原料合金\n\n·ジェットミル装置による微粉砕工程直後の合金粉末\n\n·焼結工程終了後の焼結体\n\n【0075】\n\n【表4】\n\n\n\n【0076】\n\n表4からわかるように、粉砕工程後、Dyの組成比率が原料合金における場合よりも低下している。これは、熱処理を省略した結果、粒界相に残留したDyが水素脆化処理および微粉砕工程を経るうちに超微粉末粒子となって粉末から除去されたためであると考えられる。\n\n【0077】\n\n表4に示される焼結体の磁気特性は、表5に示す通りであった。\n\n【0078】\n\n【表5】\n\n\n\n【0079】\n\n表5から、比較例の磁気特性(特に保磁力)が表2に示す磁気特性よりも劣っていることがわかる。\n\n【0080】\n\nこの焼結体(比較例)における主相中の希土類元素の構成比と、焼結体全体における希土類元素の構成比を表6に示す。\n\n【0081】\n\n【表6】\n\n\n\n【0082】\n\n表6から、Nm/Ntは1.1よりも少なく、Dyは主相に濃縮された状態にあるとはいえないことがわかる。Dyが主相に濃縮したというためには、Nm/Ntが1.1以上であることが必要である。\n\n【0083】\n\nなお、上記結果は、いずれも、酸素濃度を0.1体積%以下に調節した不活性気流を用いたジェットミル装置による粉砕を行った後、粉末の酸化をできるだけ抑制した環境で速やかに焼結した場合に得られたものである。\n\n【0084】\n\n以下、ジェットミル装置による微粉砕後、粉末を大気中で30分放置し、成形および焼結工程を実行した比較例について、上記と同様の測定を行ったので、その結果を説明する。\n\n【0085】\n\n以下に示す表7は、600℃1時間の熱処理を行った合金Aに含まれる各元素について、以下の各段階における合金の組成比率(質量比)を示している。\n\n·大気中での放置後における合金粉末\n\n·焼結工程終了後の焼結体\n\n【0086】\n\n【表7】\n\n\n\n【0087】\n\n表7から、酸素の比率が前述した例における場合よりも倍増していることがわかる。表7に示される焼結体の磁気特性は、表8に示す通りであった。\n\n【0088】\n\n【表8】\n\n\n\n【0089】\n\n表8からわかるように、前述した例に比較して磁気特性が劣化している。この焼結体における主相中の希土類元素の構成比と、焼結体全体における希土類元素の構成比を表9に示す。\n\n【0090】\n\n【表9】\n\n\n\n【0091】\n\n表9から、主相においてDyが含有希土類元素中に占める原子数比率(Nm)は、焼結磁石全体においてDyが含有希土類元素中に占める原子数比率(Nt)とほとんど等しいことがわかる。このことから、粉末粒子の表面に付着した酸素は、焼結時に粒界でDyと結合し、Dyを主相から粒界相に向けて拡散させる働きを行うものと考えられる。従って\n\n、熱処理によってDyを主相に濃縮した場合でも、水素脆化処理および微粉砕工程でDyの酸化が進行した場合、主相におけるDy濃度が低下してしまうことになる。このような主相におけるDy濃度の低下は、酸素濃度を適切に制御しない雰囲気で微粉砕を行った場合にも生じる。\n\n【0092】\n\n本発明では、前述のように、微粉砕工程時における酸素濃度を適切な範囲に調節しているため、Dyの粒界への拡散を抑制し、効率的に保磁力向上を達成することができる。\n\n【産業上の利用可能性】\n\n【0093】\n\n本発明によれば、保磁力向上目的で添加したDyなどの重希土類元素RHのうち、粒界部分に位置するRHを比較的低温の熱処理で主相中に濃縮するとともに、RHの酸化による粒界相への再分布を抑制することにより、希少な重希土類元素RHを無駄なく有効に活用して保磁力を効果的に向上させることが可能である。\n\n【図面の簡単な説明】\n\n【0094】\n\n【図1】急冷合金(合金A)の組織を示す模式図である。\n\n【図2】インゴット合金(合金B)の組織を示す模式図である。\n\n【図3】急冷合金(合金A)に対して、600℃1時間の熱処理をAr雰囲気中で行った後の合金組織を示す図である。\n\n【図4】インゴット合金(合金B)に対して、600℃1時間の熱処理をAr雰囲気中で行った後の合金組織を示す図である。\n\n【図5】急冷合金(合金A)に対して、800℃1時間の熱処理をAr雰囲気中で行った後の合金組織を示す図である。\n\n【図6】600度1時間の熱処理を施した急冷合金(合金A)の粉末から作製した焼結磁石の組織の組織を示す図である。\n\n【図7】比較例として、600℃1時間の熱処理を省略した急冷合金(合金A)の粉末から作製した焼結磁石の組織を示す図である。', '技术领域\n\n[0001]\n\n稀土磁铁及其制造方法技术领域本发明涉及稀土磁铁及其制造方法。\n\n发明背景\n\n[0002]\n\n目前，作为稀土磁体，两种钐·钴型磁体和钕·铁·硼型磁体广泛用于各种领域。其中，钕 - 铁 - 硼磁铁，磁铁各种中最高的磁能积，价格相对较低，并积极采取各种电子设备。\n\n[0003]\n\n钕 - 铁 - 硼磁体，钕 2 铁 14 是B型磁体的主相结晶，更一般地称为“RTB磁铁”可以参考。这里，R表示稀土类元素和/或Y（钇），T是由镍或Co为代表的过渡金属元素，其主要由铁，B是硼。然而，一些B的，C，N，铝，硅，和/或由元素如P，此处，B，C，N，铝，硅，和选自P的基团取代选择被称为“Q”的至少一种元素，它广泛地描述了稀土磁体被称为“基于钕 - 铁 - 硼磁铁”，“基于RTQ稀土磁体称为”。的R-T-Q基稀土磁铁，R  2 Ť 14 构成主相问的晶粒。\n\n[0004]\n\n对于磁铁粉末的R-T-Q的稀土材料的合金包括执行所述原料合金的粗粉碎的第一研磨步骤，它通常是由该方法和用于铣削材料合金的第二粉碎步骤中产生。例如，通过后氢脆处理在所述第一研磨步骤中粗粉碎原料合金到几百微米或更小的大小，在第二研磨步骤，将粗粉碎的原料合金（粗粉碎粉）喷射磨粉碎机如将其精细粉碎至平均粒径约几μm的尺寸。\n\n[0005]\n\n大致有两种制造磁铁用原料合金的方法。第一种方法是铸锭铸造方法，其中将具有预定组成的熔融合金放入模具中并相对缓慢地冷却。第二方法中，具有规定组成的熔融合金单辊，双辊，旋转盘，或与该模具这样快速冷却接触旋转圆柱体，带坯连铸，从合金熔液产生比坯料合金薄凝固合金，方法和以离心铸造方法为代表的快速冷却方法。\n\n[0006]\n\n如果通过淬火方法，该熔融合金的冷却速度，例如，在10  1 ℃/秒10  4 ℃/秒或更小。通过快速冷却方法生产的快速凝固合金的厚度在0.03mm以上至10mm以下的范围内。熔融合金从与冷却辊（辊接触面）的表面接触凝固，从辊接触面滑动的厚度方向的晶体生长成柱状（针状）。其结果是，该急冷凝固合金具有10微米或更300μm的或更小为3μm或10μm以下ř 2 Ť 14  Q结晶相的短的轴向尺寸的纵向尺寸，R  2 其被本发明的含一个（稀土类元素R的浓度相对较高的相）分散在Q中的结晶相的晶粒边界t  14 富R相它具有精细的晶体结构。富R相是浓度为稀土类元素R的相对高的非磁性相，（对应于晶界的宽度），其厚度为10μm或更小。\n\n[0007]\n\n淬冷合金，相对于传统的铸锭铸造法（铸造模具）通过（锭合金）制成的合金，因为它是在一段相对较短的时间冷却，组织越细，晶粒尺寸很小。此外，晶粒被微细地分散在晶界的面积很大，由于富R相在晶界扩散薄薄地，富R相的分散性优异，烧结性得到改善。因此，当制造具有优异性能的R-T-Q稀土烧结磁体时，使用淬火合金作为其原料。\n\n[0008]\n\n稀土合金一次使其夹带氢的气体（特别是急冷合金）中，由所谓的氢粉碎工序中，晶界进行粗粉碎时（本说明书中，这样的研磨方法被称为“氢脆处理”）由于定位的富R相与氢反应并膨胀，因此倾向于从富R相（晶界部分）的部分断裂。因此，富氢相倾向于出现在通过氢稀释稀土合金获得的粉末颗粒的表面上。此外，如果急冷凝固合金是，富R相微细化，因为高的分散性及其趋向于露出富R相特别是在氢粉碎粉末的表面上。\n\n[0009]\n\n通过上述氢脆化处理的研磨方法公开在例如美国专利申请09 / 503,738中，该专利申请通过引用结合到本文中。\n\n[0010]\n\n这样为了提高R-T-Q的稀土磁铁的矫顽力，用于置换稀土 -  [R的Dy，Tb和/或Ho是已知的一部分的技术。在本说明书中，选自Dy，Tb和Ho的至少一种元素表示为R  H  。\n\n发明内容\n\n发明内容\n\n[0011]\n\n然而，R添加到基于稀土磁体ħ熔融合金的淬火之后，这是主要的R相 2 Ť 14 不仅在Q阶段，而且在晶界阶段。存在这样的晶界相中存在的R  H 对提高矫顽力没有贡献的问题。\n\n[0012]\n\n另外，由于在晶界处存在许多R  H ，烧结性劣化。此问题，R  H的比例占据的原料合金时，会增加超过1.5原子％，涉及到该比例等于或大于2.0原子％而突出。\n\n[0013]\n\n另外，急冷凝固合金，氢脆处理和研磨步骤超细（粒径：1微米或更小）的晶界相部分和趋于，即使没有暂时成细粉末，并构成露出粉末表面便宜。超细粉末往往会引起氧化和着火问题并对烧结产生不利影响，因此在研磨过程中会被除去。露出的粒径为1μm或更多的粉末颗粒的表面上的稀土元素容易氧化和，R ħ为容易比Nd和Pr氧化，存在于合金中的晶界相将R ħ是原因，以形成稳定的氧化物，而不在主相中取代了稀土类元素R，很容易保持在晶界相被分离的状态。\n\n[0014]\n\n的R从上面，在急冷凝固合金ħ中，存在于晶界相部分还没有有效地用于提高矫顽力的问题。 [R ħ是一种罕见的元件，由于价格高，从降低在有效利用和资源的制造成本的观点来看，强烈要求消除浪费如上所述。\n\n[0015]\n\nJP 61-253805公开了以氧化物的形式添加的Dy，通过在烧结过程中扩散到主相的表面上，公开了一种用于获得具有一个小的Dy高矫顽力的技术。然而，根据该技术，由于镝氧化物没有贡献的矫顽力保持在晶界相，则不可能充分地降低的Dy的量。\n\n[0016]\n\nJP-3-236202公开了通过除了镝添加Sn，公开了一种用于浓缩的Dy存在于晶界相到主相的技术。然而，根据该技术，在主相的存在比率是由锡，没有贡献到磁性的存在而降低，存在饱和磁化强度降低的问题。另外，Dy被保持到晶界相作为氧化物，Dy的浓缩的主相的效果小。\n\n[0017]\n\n此外，镝，铽，而不使用重稀土元素何等，铝，铜，铬，镓，铌，钼，也已经提出了通过添加V等提高矫顽力，因为它会导致添加各元素的生成来无助于磁性相，或降低了饱和磁化强度，其自身的磁化主相不利地降低。\n\n[0018]\n\n顺便提及，日本专利特开5-33076号公报中，合金锭，通过400℃的热处理或更高900℃或以下，公开了一种用于在一个特定的方向引导所述主相结晶的取向方向。\n\n[0019]\n\nJP-8-264363中公开了在800℃下热处理或更高1100℃温度通过带铸法制备的合金下面之后，通过提高颗粒大小分布研磨后，为了提高磁特性公开了技术。然而，当热处理在这样的温度，对于微结构是带铸法的优点丧失，当粉末的粒度分布是相同的，矫顽力降低。另外，认为烧结性也降低。\n\n[0020]\n\nJP-A-10-36949，在通过带坯连铸方法冷却该熔融合金，将温度区域，其中合金温度下降到600℃，从800℃，以限制每分钟或更少1℃的冷却速率，进行逐渐冷却公开了技术。根据该方法，提高主相的比例，描述了在烧结磁铁的剩余磁化，以改善，未描述关于矫顽力的改善任何东西。\n\n[0021]\n\n根据由本发明人进行的实验中，产生由特定淬火的急冷凝固合金时，熔融合金，元件R   ħ  存在于晶界阶段。这个元件R ħ似乎是发生是因为熔融金属凝固过程中会的拟合到在主相中的稀土类元素R（位点）的晶格位置之前完成的现象。因此，当通过粉碎这样的带坯连铸方法制造的急冷凝固合金之前氢脆过程时，R   ħ发生在多晶界相存在R  H 的利用效率进一步降低的问题。此外，当R ħ通常包含在晶界相合金，由于烧结性下降，有必要提高烧结温度。\n\n[0022]\n\n本发明是鉴于这样的心而作出的，它是一个主要目的，镝，Tb和Ho和有效利用，的R-Fe-Q稀土类磁铁的有效改善矫顽力它是提供。\n\n[0023]\n\n本发明的另一个目的是提供一种制备R-Fe-Q稀土原料合金的方法和用于磁体的粉末，以及使用该合金粉末的烧结磁体的制造方法。\n\n发明内容\n\n[0024]\n\nRTQ基于根据本发明的稀土类磁铁，R  2 Ť 14  Q相位作为主相（R为稀土类元素，T是过渡金属元素，Q为B，C，至少一种选自N，Al，Si和P的元素，其中稀土元素是选自Nd和Pr中的至少一种元素。 H 选自R  L 和Dy，Tb和Ho，其中R  H ，占总含量稀土元素的超过10％（原子），而且，R  2 Ť 14  Q包含在R相ħ大于R  H 的原子数与所含的全部稀土元素的比例。\n\n[0025]\n\n在某些优选的实施方案中，R  2 Ť 14 řħ载于Q相位中的总含量稀土类元素R的原子数的比大于 H 原子比的1.1倍。\n\n[0026]\n\n在某些优选的实施方案中，稀土类元素R整个11原子％以上17原子％以下，过渡金属元素T 75原子％84原子总％或更少，元件Q是小于8原子％的总数的5原子％或更多它是。\n\n[0027]\n\n在某些优选的实施方案中，钛，钒，铬，锰，镍，铜，锌，镓，锆，铌，钼，铟，锡，铪，钽，钨，和至少一种选自由Pb组成的组中选择的附加要素M.\n\n[0028]\n\n对于RTQ原料合金根据本发明的稀土磁铁，R  2 Ť 14  Q相位作为主相（R为稀土类元素，T是过渡金属元素，Q为B ，选自C，N，Al，Si和P）中的至少一种元素，其中稀土元素选自Nd和Pr。至少一个R选自  →和，镝，铽，并且至少一个R选自何ħ，R  2 Ť 14  Q相位，短轴向尺寸纵向尺寸为3μm或10微米或300微米以下或10μm的无针是结晶的，将R ħ，占总含量稀土元素的超过10％（原子），而且，R  2 Ť 14  Q相位高于R  2  T  14  Q阶段以外的相中R  H 的浓度高。该原料合金优选含有80体积％以上的R  2  T  14  Q相作为整体。\n\n[0029]\n\n根据本发明选择的稀土磁铁制造用于RTQ的原料合金的方法，RTQ基稀土合金（R是稀土类元素，T是过渡金属元素，Q为B，C，N，铝，硅，和选自P的和的至少一种元素）表示，是作为稀土类元素R，R  L选自Nd和Pr和组成的组中，由Dy，Tb和Ho组成中的至少一个选自含有选择制备至少一个R ħ和熔融合金的步骤，通过淬火合金，使得凝固的合金的冷却步骤中，所述的熔体它包括在温度范围低于800℃400℃以上急冷凝固合金保持超过12小时5分钟以上的热处理工序。\n\n[0030]\n\n在优选的实施方案中，冷却步骤包括用旋转的冷却辊冷却合金的熔融合金。\n\n[0031]\n\n在某些优选的实施方案中，冷却步骤中，在10  1 ℃/秒10  4 ℃/秒的冷却速率冷却所述合金的熔液的工序它包括。\n\n[0032]\n\n在优选的实施方案中，冷却步骤通过带铸法进行。\n\n[0033]\n\n根据本发明的稀土磁铁制造用于RTQ原料合金粉末的方法包括脆化RTQ稀土材料的合金磁铁的所述的制造方法由氢脆工艺制造的一个的步骤中脆化并研磨用于RTQ系统稀土磁体的原料合金。\n\n[0034]\n\n在某些优选的实施方案中，在粉碎为一个磁铁的R-T-Q的稀土材料的合金的工序，和执行与惰性气体的高速气流的R-T-Q基稀土磁体的研磨。\n\n[0035]\n\n在优选的实施方案中，将氧浓度调节至0.05体积％或更高且3体积％或更低。\n\n[0036]\n\n了根据本发明的制造烧结磁铁的制造方法包括：准备的成型体的步骤RTQ基于稀土材料的合金粉末为根据上述的任一项所述的制造方法制造的磁体，以及烧结所述成形体它包括。\n\n[0037]\n\n在一个优选的实施方案中，磁体的-T-Q-的R稀土材料的合金粉末中，稀土元素的含量R是来自不同种材料的合金粉末形成。\n\n发明效果\n\n[0038]\n\n根据本发明，重稀土元素（Dy等）中在提高矫顽力对象R ħ，相对低的温度 -  [R 加入的H 位于晶界用在热处理中，R ħ通过抑制晶界相的重分布浓缩的主相因，氧化稀土类元素R ħ能够有效地利用而不浪费，有效地提高矫顽力。\n\n具体实施方式本发明时\n\n[0039]\n\n在本发明中，首先，RTQ基稀土合金的（R是稀土元素，T是过渡金属元素，Q为B，C，N，铝，硅，和选自P的组中选出的至少一种元素）准备熔融金属。的RTQ稀土合金作为稀土类元素R，和至少一个R选自Nd和Pr →组成的组中，被选择的Dy，Tb中的，并选自何并且至少有一种R  H 。接下来，将具有上述组成的合金熔体淬火以制备快速凝固的合金。\n\n[0040]\n\n本发明人已经发现，通过在这样的快速凝固温度范围低于400℃的合金或更高800℃的12个小时或更少超过5分钟之间保持，定位于晶界相的急冷凝固合金 -  [R  H 可以移动到主相并浓缩到主相，并且本发明已经发现。\n\n[0041]\n\n根据由本发明人的实验，为了在相对低的温度范围低于400℃以上800℃的移动将R ħ以从晶界相的主相，所述急冷凝固合金的组织结构有必要好。快速凝固具有这样的微细组织结构，骤冷法合金，如带坯连铸法，10中的熔融合金 1 ℃/秒10  4 ℃/秒速度不超过100米/秒。淬火速率更优选为10  2 ℃/秒或更高。在美国专利No.5,383,978中公开了一种通过带铸法制造快速凝固合金的方法，该专利在此引用作为参考。\n\n[0042]\n\n以往，对于所制造的合金锭的方法，通过在高温下进行长时间的热处理，已经尝试以减少不需要的α-铁存在于该合金中的量。然而，合金通过淬火法，例如带材铸造方法不包括大部分的α-铁，这种热处理产生是不必要的，骤冷合金晶体结构是精细与铸锭合金相比技术常识是，对快速凝固的合金进行热处理是不可取的，这可能导致晶体结构的粗化。\n\n[0043]\n\n本发明人，而不会被这样的技术知识，在合适的温度范围内的热处理的束缚，根据这种热处理，R，在的晶界存在ħ主相位和矫顽力可以有效地提高。\n\n[0044]\n\n此外，根据由本发明人进行的，为了提高矫顽力的实验中，还发现，粉碎急冷凝固合金时，适当地控制在气氛中的氧浓度是极为重要的。特别地，研磨步骤之前进行氢脆处理时，由于晶界相部分到粉末表面倾向于暴露执行在惰性气体中粉碎步骤，而且，所述惰性气体中的氧浓度优选将其调节至1体积％或更低。如果气氛气体中的氧浓度变得过高的体积将超过1％时，粉末颗粒在研磨过程中氧化，稀土元素的一部分被消耗以生成氧化物。稀土氧化物的存在无助于磁性的稀土类磁铁材料的合金粉末大量产生时，主R相 2 Ť 14  Q基于结晶相随着比率降低，磁体特性恶化。 [R 的同时，容易地制造氧化物ħ在晶界处，R ħ的主相中浓度降低。\n\n[0045]\n\n这种精细粉碎可以使用粉碎机如喷射磨机，磨碎机，球磨机等进行。顺便提及，通过喷射式粉碎机的粉碎在美国申请09 / 851,423中公开，其通过引用并入本文。\n\n[0046]\n\n在下文中，将描述本发明的优选实施例。\n\n[0047]\n\n首先，制备R  -  T  -  Q稀土合金熔体。作为稀土类元素R，R中的至少一个 L选自Nd和Pr 组成的组中和，镝，铽和由何组成的组中选择的至少一个R  H 。这里，为了获得足够的矫顽力改善效果，R  H 的原子数（摩尔比）与整个稀土元素的比率设定为10％或更多。\n\n[0048]\n\n在优选的实施方案中，稀土元素R的含量为整个合金的11原子％以上且17原子％以下，并且有助于提高矫顽力的R  H 为10。它至少占原子％。\n\n[0049]\n\n过渡金属元素T可以含有Fe作为主要成分（T作为整体的50原子％以上），其余可以含有过渡金属元素，例如Co和/或Ni。过渡金属元素T的含量为整个合金的75at％以上且84at％以下。\n\n[0050]\n\n元素Q含有B作为主要成分，是在四方Nd  2  Fe  14  B晶体结构C中可以取代B（硼）的元素，并且可以含有选自N，Al，Si和P中的至少一种。元素Q的含量为整个合金的5原子％以上且8原子％以下。\n\n[0051]\n\n的合金中选择，除了上述主要元素，钛，钒，铬，锰，镍，铜，锌，镓，锆，铌，钼，铟，锡，铪，钽，钨，和选自铅可以添加至少一种附加元素M.\n\n[0052]\n\n使具有上述组成的原料合金的熔体与带式铸造设备的冷却辊的表面接触，以快速固化。冷却辊的转速（表面圆周速度）的优选范围是0.3米/秒或更大且10米/秒或更小。结果，合金的熔体可以以10  1 ℃/ s或更高且10  4 ℃/秒的冷却速率淬火。\n\n[0053]\n\n在以这种方式生产的淬火合金（带铸合金）中，R    2  T  14  Q相（R作为稀土元素，T是过渡金属元素，Q是选自B，C，N，Al，Si和P）中的至少一种元素。 [R  2 Ť 14  Q相位，短轴尺寸为3微米或10微米或更小，它是大于10μm纵向尺寸为300μm或更小的针头。在紧接在后面的快速冷却（初纺），R  2 Ť 14 中的R Q相ħř的浓度为2 Ť 14 它是在一个基本上浓度 -  [R ħ比（晶界相，等）Q相位以外的相位。\n\n[0054]\n\n接着，通过带坯连铸法得到的急冷凝固合金，保持超过12小时的温度范围内低于400℃5分钟以上或更高800℃的热处理步骤..热处理的优选温度范围为400℃以上且700℃以下，更优选的温度范围为500℃以上且650℃以下。该热处理优选通过加热在一个单独的炉中进行一次骤冷装置将冷却的原料合金在其中扩散不会在元件（例如，300℃左右）发生的温度。\n\n[0055]\n\n通过进行热处理，R是存在于晶界相部分ħ是主要R相 2 Ť 14 在Q相它移动并集中在R  2  T  14  Q阶段。其结果是，R的浓度 2 Ť 14 中的R Q相ħ是，R  2 Ť可以获得高于Q相以外的相中的R  H 浓度的合金。\n\n[0056]\n\n接下来，通过氢脆化方法使热处理后的合金脆化，然后使用粉碎机如喷射磨机装置粉碎，使其成为细粉末。所得干燥粉末的平均粒径（FS SS粒径）为例如3.0至4.0μm。在喷射式粉碎机装置中，通过使用惰性气体的高速气流将原料合金粉碎，其中引入预定量的氧气。优选将惰性气体中的氧浓度调节至1体积％或更低。更优选的氧浓度为0.1体积％或更低。\n\n[0057]\n\n在本发明中，之所以这样研磨过程中限制所述气氛中的氧浓度，则移动R从晶界相移入主相ħ是再次晶界相部分地由氧化，它是为了防止降水。当多的氧气包含在粉末，镝，铽，重稀土类元素R ħ，如何，往往会产生与氧结合更稳定的氧化物。在本发明中使用的合金结构中，氧气扩散到许多分布在晶界相比主相，R在主相中ħ再次是晶界相，其中，所产生的氧化它被认为是消耗的。以这种方式，当将R  H +从主相和流出，不能在矫顽力得到充分的改善，在烧结步骤中所述粉碎工序和所述下，氧化物粉末正确期望抑制它。\n\n[0058]\n\n接下来，使用粉末压制设备，粉末在取向磁场中被压缩并形成所需的形状。由此获得的粉末压块在10  -4  Pa或更高且10  6  Pa或更低的惰性气体气氛中烧结。通过在大气中，其被限制为预定水平或更少这样进行烧结过程中的氧浓度，理想的是包含在所述烧结体（烧结磁体）0.3质量％以下的氧浓度。\n\n[0059]\n\n（实施例）\n\n首先，通过淬火具有一个组合物中的熔融合金22％的Nd-10％的Dy-0.25％的Al-0.05％的Cu-1.0％B-余量的Fe在带式铸造法的质量比，具有上述组成的快速凝固合金的术语（合金A）制备。作为比较例，通过铸锭法制造合金（合金B）。图1和2分别是显示合金A和B的结构的示意图。在附图中，Dy示意性地显示为点。如图1所示，在合金A中，Dy在主相和晶界相均匀存在。从图1和图2之间的比较可以看出，在合金A的情况下，晶界相中存在的Dy的量大于在合金B中的量。\n\n[0060]\n\n接着，将合金A和B在Ar气氛中在600℃下热处理1小时。热处理之前和之后的合金结构分别示于图3和4中。如图3和图4所示，在合金A中，存在于晶界相中的Dy的浓度降低。这是因为存在于晶界相中的Dy通过热处理迁移到主相并且在主相中浓缩。\n\n[0061]\n\n作为参考，将合金A在Ar气氛中在800℃下进行1小时的热处理。在这种情况下，如图5所示，Dy从晶界相移动到主相并且在主相中集中，但是构成主相的晶粒稍微更大。\n\n[0062]\n\n接下来，对上述合金进行氢脆化处理（粗粉碎），并使用喷射磨机进行气流型精细粉碎以制备合金粉末。喷射式粉碎机中的粉碎气氛为氮气，研磨气氛中的氧浓度调整为0.1体积％以下。之后，使用粉末压制设备，在取向磁场中将合金粉末压缩成型，以制备合金粉末的成型体。之后，对粉末压块进行真空烧结和时效处理，以制备烧结磁体。\n\n[0063]\n\n图6显示了由合金A粉末制成的烧结磁体的结构。可以看出，Dy仍然集中在主要阶段。\n\n[0064]\n\n另一方面，作为比较例，图7示出了由合金A制造的烧结磁体的结构，其中省略了在600℃下热处理1小时。从该图中可以看出，在晶界相中产生氧化物。在该氧化物中存在相对大量的氧化Dy，并且主相中的Dy浓度相应地降低。\n\n[0065]\n\n表1示出了在600℃下热处理1小时的合金A中包含的每种元素的以下各阶段中的合金的组成比（质量比）。\n\n·氢脆处理前的材料合金\n\n·通过喷射磨机装置进行精细粉碎处理后的合金粉末\n\n - 烧结过程完成后的烧结体\n\n[0066]\n\n[表1]\n\n[0067]\n\n从表1可以看出，Dy的比例在精细粉碎后和烧结后的状态下比在研磨前增加。这是因为，原料合金的晶界相已在研磨过程中一超细粉末颗粒粉末中除去的，而Nd和Pr，将其定位于晶界相的一部分丢失时， Dy从晶界相凝聚到主相避免了这种消失，这意味着含量比相对提高。\n\n[0068]\n\n表1中所示的烧结体的磁性能如表2所示。\n\n[0069]\n\n[表2]\n\n[0070]\n\n表3表示该烧结体中主相中的稀土元素和整个烧结体中的稀土元素的组成比。\n\n[0071]\n\n[表3]\n\n[0072]\n\n在此，其被包括在所述主相中的稀土类元素，原子数比，使通过Dy和N 米占据，其中包含在整个烧结磁铁的稀土类元素，所占据的Dy的数量的原子数比N  t 。在表3所示的例子中，发现N  m  / N  t 为1.17，并且Dy在主相中浓缩。这样，N  m  / N  t 优选为1.15以上。\n\n[0073]\n\n在主相中的Dy的原子数比（N 米）是由EPMA，镝与整个烧结磁铁的原子比进行定量分析而得到的值（N  t ）是化学分析结果得到的值。\n\n[0074]\n\n下面的表4示出了在600℃下未经受1小时热处理的合金A（比较例）的以下各阶段中的合金的组成比（质量比）。\n\n·氢脆处理前的材料合金\n\n·通过喷射磨机装置进行精细粉碎处理后的合金粉末\n\n - 烧结过程完成后的烧结体\n\n[0075]\n\n[表4]\n\n[0076]\n\n从表4可以看出，在研磨步骤之后，Dy的组成比低于原料合金的情况。这是省略热处理的结果，大概是因为镝残留在晶界相已被从粉末中除去变得超细粉末颗粒，同时经历氢脆过程和粉碎处理。\n\n[0077]\n\n表4中所示的烧结体的磁性如表5所示。\n\n[0078]\n\n[表5]\n\n[0079]\n\n从表5可以看出，比较例的磁特性（特别是矫顽力）不如表2所示的磁特性。\n\n[0080]\n\n该烧结体（比较例）中的主相中的稀土元素的构成比和烧结体中的稀土元素的构成比示于表6中。\n\n[0081]\n\n[表6]\n\n[0082]\n\n从表6可以看出，N  m  / N  t 小于1.1，并且不能说Dy在主相中浓缩。为了使Dy在主相中浓缩，N  m  / N  t 必须为1.1或更大。\n\n[0083]\n\n上述结果表明，当任一，使用惰性气体流用喷射磨粉碎后低于0.1体积％调整氧浓度，迅速在抑制粉末的唯一可能的氧化的环境中烧结它是在获得。\n\n[0084]\n\n在下文中，通过喷射式粉碎机微粉碎后，静置在空气中，执行模制和烧结步骤的比较例30分钟的粉末，由于是如上述那样进行的测量中，将描述的结果。\n\n[0085]\n\n表7以下所示，对于包含在所述合金A中的每个元素进行加热处理600℃1小时，它显示了在每个阶段中该合金的组成比（质量比）如下。\n\n·离开大气后的合金粉末\n\n - 烧结过程完成后的烧结体\n\n[0086]\n\n[表7]\n\n[0087]\n\n从表7可以看出，与上述实施例中的情况相比，氧的比例加倍。表7中所示的烧结体的磁性能如表8所示。\n\n[0088]\n\n[表8]\n\n[0089]\n\n从表8可以看出，与上述例子相比，磁特性恶化。该主体相中的稀土元素的构成比和该烧结体中的烧结体中的稀土元素的构成比示于表9中。\n\n[0090]\n\n[表9]\n\n[0091]\n\n在整个烧结磁铁（表9，原子百分数的Dy是在包含在主相中的稀土元素的数目（N 米），其具有的Dy的原子百分比包含稀土元素Ñ t ）。因此，附着在粉末颗粒的表面上的氧气与镝在烧结过程中晶粒间界相结合，它被认为是执行功能朝向从主相的Dy的晶界相扩散。因此，即使当的Dy在通过热处理主相中的浓度，如果的Dy在氢脆处理和研磨步骤中的氧化已进行，从而使的Dy在主相中浓度降低。当在不适当控制氧浓度的气氛中进行精细粉碎时，也会发生主相中Dy浓度的这种降低。\n\n[0092]\n\n在本发明中，如上所述，由于在在适当范围内的研磨步骤调节的氧浓度，能够抑制扩散的Dy的晶界，实现有效的矫顽力提高。\n\n[工业适用性]\n\n[0093]\n\n根据本发明，重稀土元素（Dy等）中在提高矫顽力对象R ħ，相对低的温度 -  [R 加入的H 位于晶界用在热处理中，R ħ通过抑制晶界相的重分布浓缩的主相因，氧化稀土类元素R ħ能够有效地利用而不浪费，有效地提高矫顽力。\n\n附图说明\n\n[0094]\n\n图1是显示快速凝固合金（合金A）的结构的示意图。\n\n图2是表示铸锭合金（合金B）的结构的示意图。\n\n图3是表示使快速凝固的合金（合金A）在Ar气氛中在600℃下热处理1小时后的合金组织的图。\n\n图4是表示在Ar气氛中在600℃下热处理铸锭合金（合金B）1小时后的合金组织的图。\n\n图5是表示在Ar气氛中使快速凝固的合金（合金A）在800℃下热处理1小时后的合金组织的图。\n\n图6是表示由在600℃下热处理1小时的快速凝固合金（合金A）的粉末制成的烧结磁体的结构的结构的图。\n\n图7是表示由快速凝固合金（合金A）的粉末制造的烧结磁体的结构的视图，其中作为比较例，省略了在600℃下热处理1小时。');
INSERT INTO `os_patent_instruction_text` VALUES (12933, 22762, 'TECHNICAL FIELD\n\n[0001]The present invention relates to a rare earth magnet, and a production method thereof.\n\nBACKGROUND ART\n\n[0002]Presently, two kinds of rare earth magnets: samarium/cobalt-based magnet, and a neodymium/iron/boron-based magnet are widely used in various fields. The neodymium, iron/boron-based magnet exhibits the highest magnetic energy product of various kinds of magnets, and the price thereof is relatively low, so that the neodymium/iron/boron-based magnet is positively adopted in various electronic equipments.\n\n[0003]The neodymium/iron/boron-based magnet is a magnet having Nd2Fe14B crystals as a main phase, and, in some cases, the magnet is more generally referred to as “an R-T-B magnet” Herein, R is a rare earth element and/or Y (yttrium), T is mainly Fe and a transition metal represented by Ni and Co, and B is boron. An element such as C, N, Al, Si, and/or P can be substituted for part of B, so that, in this specification, at least one element selected from the group consisting of B, C, N, Al, Si, and P is denoted by “Q”, and a rare earth magnet referred to as “a neodymium/iron/boron-based magnet” is widely referred to as “an R-T-Q rare earth magnet”. In the R-T-Q rare earth magnet, R2T14Q crystal grains constitute a main phase.\n\n[0004]Powder of a material alloy for the R-T-Q rare earth magnet is often prepared by a method including a first pulverization process in which the material alloy is coarsely pulverized, and a second pulverization process in which the material alloy is finely pulverized. For example, in the first pulverization process, the material alloy is coarsely pulverized so as to have a size of several hundreds of micrometers or less by hydrogen decrepitation process. Thereafter, in the second pulverization process, the coarsely-pulverized material alloy (coarsely-pulverized powder) is finely pulverized so as to have an average particle diameter of about several micrometers by means of a jet mill pulverization apparatus, or the like.\n\n[0005]There are two general kinds of methods for preparing a material alloy for a magnet. The first method is an ingot casting method in which a molten alloy of predetermined composition is put into a casting mold, and is relatively slowly cooled. The second method is a rapid solidification method represented by a strip casting method, a centrifugal casting method, or the like in which a molten alloy of predetermined composition comes into contact with a single roll, a twin roll, a rotating disk, a rotating cylindrical casting mold, or the like, and is rapidly cooled, so that a solidified alloy thinner than an ingot alloy is prepared from the molten alloy.\n\n[0006]In the case of the rapid solidification method, the cooling speed of the molten alloy is in the range of, for example, not less than 101° C./sec. nor more than 104° C./sec. The thickness of the quenched alloy prepared by the rapid solidification method is in the range of not less than 0.03 mm nor more than 10 mm. As for the molten alloy, a face thereof which is brought into contact with a cooling roll (a roll contact face) is sequentially solidified. Thus, crystals are grown into a columnar shape (a needle-like shape) from the roll contact face in the thickness direction. As a result, the rapidly solidified alloy has a fine-crystal structure including an R2T14Q crystal phase having a short axis size of not smaller than 3 μm nor larger than 10 μm and a long axis size of not smaller than 10 μm nor larger than 300 μm, and an R-rich phase (a phase in which the concentration of a rare earth element R is relatively high) which dispersedly exists in a grain boundary of the R2T14Q crystal phase. The R-rich phase is a nonmagnetic phase in which the concentration of the rare earth element R is relatively high, and the thickness thereof (corresponding to the width of the grain boundary) is 10 μm or less.\n\n[0007]The rapidly solidified alloy is cooled in a relatively short time, so that the structure is made to be fine and a crystal grain size is small, as compared with an alloy (an ingot alloy) prepared by a conventional ingot casting method (a mold casting method). In addition, an area of the grain boundary is wide because crystal grains are finely dispersed, and the R-rich phase is superior in dispersibility because the R-rich phase is thinly spread in the grain boundary, so that the degree of sintering is improved. Therefore, in the case where an R-T-Q rare earth sintered magnet with superior properties is to be produced, the rapidly solidified alloy is used as the material.\n\n[0008]In the case where a hydrogen gas is once occluded in a rare earth alloy (especially in a quenched alloy), and the coarse pulverization is performed by a so-called hydrogen pulverization process (in this specification, such a pulverization method is referred to as “a hydrogen decrepitation process”), an R-rich phase positioned in a grain boundary reacts with hydrogen, and expanded, so that cracks tend to occur from a portion of the R-rich phase (the grain boundary portion). Therefore, the R-rich phase frequently appears in a grain surface of powder obtained by the hydrogen pulverization of the rare earth alloy. In the case of the rapidly solidified alloy, the R-rich phase is made to be fine, and the dispersibility is high, so that the R-rich phase is especially exposed in the surface of the power obtained by hydrogen pulverization.\n\n[0009]The above-described pulverization method by means of the hydrogen decrepitation process is disclosed in U.S. Pat. No. 6,403,024 which is incorporated in this specification.\n\n[0010]In a known technique, in order to increase the coercive force of such an R-T-Q rare earth magnet, Dy, Tb, and/or Ho is substituted for part of rare earth element R. In this specification, at least one element selected from the group consisting of Dy, Tb, and Ho is denoted by RH.\n\n[0011]However, the element RH added to a material alloy for an R-T-Q rare earth magnet uniformly exists not only in an R2T14Q phase as a main phase but also in a grain boundary phase, after the rapid solidification of molten alloy. The element R existing in the grain boundary phase involves a problem that the element RH does not contribute to the increase in the coercive force.\n\n[0012]There is another problem that the existence of a lot of element RH in the grain boundary deteriorates the degree of sintering. The problem is serious when the ratio of the element RH in the material alloy is 1.5 at % or more, and the problem is remarkable in the case where the ratio is 2.0 at % or more.\n\n[0013]A grain boundary phase portion of the rapidly solidified alloy is easily made into super fine powder (particle diameter: 1 μm or less) by the hydrogen decrepitation process and the fine pulverization process. Even if the portion is not made into fine powder, an exposed powder surface can be easily constructed. Such super fine powder may easily cause problems of oxidation and ignition, and badly affect the sintering, so that the super fine powder is removed during the pulverization process. The rare earth element exposed on the surface of a powder grain having a particle diameter of 1 μm or more is easily oxidized. In addition, the element RH is easily oxidized, as compared with Nd and Pr, so that the element RH existing in the grain boundary phase of the alloy forms a stable oxide and is not substituted for the rare earth element R as the main phase. Thus, a segregated condition is easily maintained in the grain boundary phase.\n\n[0014]As described above, there is a problem that, in the element RH in the quenched alloy, a portion existing in the grain boundary phase is not effectively used for the purpose of improving the coercive force. The element RH is a rare element, and is expensive. For these reasons, in views of the effective use of the resources and the reduction in production cost, it is strongly required that the above-mentioned waste is avoided.\n\n[0015]Japanese Laid-Open Patent Publication No. 61-253805 discloses a technique in which Dy is added in the form of an oxide, and the Dy is dispersed in a surface of the main phase during the sintering, so that high coercive force can be obtained with a small amount of Dy. According to the technique, however, a Dy oxide which does not contribute to the coercive force remains in the grain boundary phase, so that the use amount of Dy cannot be sufficiently reduced.\n\n[0016]Japanese Laid-Open Patent Publication No. 3-236202 discloses a technique in which Sn is added, in addition to Dy, so that Dy existing in the grain boundary phase is concentrated into the main phase. The technique, however, involves a problem that the existence ratio of the main phase is lowered due to the existence of Sn which does not contribute to the magnetic properties, thereby lowering the saturation magnetization. In addition, the Dy remains in the grain boundary phase as an oxide, so that the effect that Dy is concentrated into the main phase is little.\n\n[0017]A technique in which the coercive force is improved by adding Al, Cu, Cr, Ga, Nb, Mo, V, or the like without using any heavy rare earth element such as Dy, Tb, or Ho is conventionally proposed. However, the addition of any of the elements results in the generation of a phase which does not contribute to the magnetic properties, so that there exist problems such as that the saturation magnetization is lowered, or that the magnetization of the main phase is lowered.\n\n[0018]Japanese Laid-Open Patent Publication No. 5-33076 discloses a technique in which thermal treatment at temperatures of not lower than 400° C. nor higher than 900° C. is performed for an alloy cast block, so that the aligning direction of the main phase crystals are directed to a specified orientation.\n\n[0019]Japanese Laid-Open Patent Publication No. 8-264363 discloses a technique in which after thermal treatment at temperatures of not lower than 800° C. nor higher than 1100° C. is performed for an alloy produced by a strip casting method, grain distribution after pulverization is improved, so that the magnetic properties are improved. However, if the thermal treatment at such temperatures is performed, the fine structure which is an advantage of the strip casting method is lost, so that the coercive force is lowered in the case where the grain distribution of powder is the same. It is considered that the degree of sintering is also lowered.\n\n[0020]Japanese Laid-Open Patent Publication No. 10-36949 discloses a technique in which, when a molten alloy is cooled by the strip casting method, the cooling speed is limited to be 1° C./min. or less in the temperature range in which the alloy temperature lowers from 800° C. to 600° C., so as to perform slow cooling. According to this method, it is described that the ratio of main phase is increased, and the residual magnetization of the sintered magnet is improved. However, the improvement in coercive force is not described.\n\n[0021]According to the experiments of the inventors, it was found that, especially when a rapidly solidified alloy was produced by rapidly solidifying a molten alloy, much existed in the grain boundary phase. It is considered that the phenomenon occurs because the solidifying process of the molten alloy is completed before the element RH is fallen in a lattice position (site) of the rare earth element R in the main phase. Accordingly, if the hydrogen decrepitation process is performed before the rapidly solidified alloy produced by the strip casting method or the like is finely pulverized, a lot of element RH existing in the grain boundary phase is wastefully lost. Thus, there is a problem that the use efficiency of the element RH is further lowered. In addition, when the element RH included in the alloy in the grain boundary phase is increased, the degree of sintering is lowered, so that it is necessary to increase the sintering temperature.\n\n[0022]The present invention has been conducted in view of the above-described prior-art. A main object of the present invention is to provide an R—Fe-Q rare earth magnet with effectively improved coercive force while Dy, Tb, and Ho is effectively used.\n\n[0023]Another objective of the present invention is to provide a production method of a material alloy for an R—Fe-Q rare earth magnet, and powder thereof, and a production method of a sintering magnet using the alloy powder.\n\nDISCLOSURE OF INVENTION\n\n[0024]The rare earth permanent magnet of the present invention is a rare earth permanent magnet containing an R2T14Q phase (R is a rare earth element, T is a transition metal element, and Q is at least one element selected from the group consisting of B, C, N, Al, Si, and P) as a main phase, wherein the rare earth element contains at least one kind of element RL selected from the group consisting of Nd and Pr, and at least one kind of element RH selected from the group consisting of Dy, Tb, and Ho, the element RH accounts for 10 at % or more of the total of the contained rare earth element, and a mole fraction of the element RH included in the R2T14Q phase is larger than a mole fraction of the element RH in the total of the contained rare earth element.\n\n[0025]In a preferred embodiment, the mole fraction of the element RH included in the R2T14Q phase is larger than 1.1 times of the mole fraction of the element RH in the total of the contained rare earth element.\n\n[0026]In a preferred embodiment, the rare earth element R is 11 at % or more and 17 at % or less of the total, the transition metal element T is 75 at % or more and 84 at % or less of the total, and the element Q is 5 at % or more and 8 at % or less of the total.\n\n[0027]In a preferred embodiment, the rare earth permanent magnet further contains at least one additive element M selected from the group consisting of Ti, V, Cr, Mn, Ni, Cu, Zn, Ga, Zr, Nb, Mo, In, Sn, Hf, Ta, W, and Pb.\n\n[0028]The material alloy for an R-T-Q rare earth permanent magnet of the present invention is a material alloy for the R-T-Q rare earth permanent magnet containing an R2T14Q phase (R is a rare earth element, T is a transition metal element, and Q is at least one element selected from the group consisting of B, C, N, Al, Si, and P) as a main phase, wherein the rare earth element contains at least one kind of element RL selected from the group consisting of Nd and Pr, and at least one kind of element RH selected from the group consisting of Dy, Tb, and Ho, the R2T14Q phase is a needle-like crystal having a size in a short axis direction of not less than 3 μm nor more than 10 μm, and a size in a long axis direction of not less than 10 μm nor more than 300 μm, and the element RH accounts for 10 at % or more of the total of the contained rare earth element, and a concentration of the element RH in the R2T14Q phase is higher than a concentration of the element RH in phases other than the R2T14Q phase. The material alloy preferably includes the R2T14Q phase at 80 vol % or more.\n\n[0029]The production method of the present invention is a production method of a material alloy for an R-T-Q rare earth magnet comprising: a step of preparing a molten alloy of an R-T-Q rare earth alloy (R is a rare earth element, T is a transition metal element, and Q is at least one element selected from the group consisting of B, C, N, Al, Si, and P), the rare earth element R containing at least one kind of element RL selected from the group consisting of Nd and Pr, and at least one kind of element RH selected from the group consisting of Dy, Tb, and Ho; a cooling step of rapidly solidifying the molten alloy, thereby producing a rapidly solidified alloy; and a thermal treatment step of holding the quenched and solidified alloy in a temperature range of 400° C. or higher and lower than 800° C. for a period of not shorter than 5 minutes nor longer than 12 hours.\n\n[0030]In a preferred embodiment, the cooling step including a step of cooling the molten alloy by using a rotating cooling roll.\n\n[0031]In a preferred embodiment, the cooling step includes a step of cooling the molten alloy at a cooling speed of not lower than 101° C./sec. nor higher than 104° C./sec.\n\n[0032]In a preferred embodiment, the cooling step is performed by a strip casting method.\n\n[0033]The production method of the present invention is a production method of material alloy powder for an R-T-Q rare earth magnet comprising the steps of: embrittling a material alloy for the R-T-Q based rare earth magnet produced by the above-decribed production method by a hydrogen decrepitation method; and pulverizing the embrittled material alloy for the R-T-Q based rare earth magnet.\n\n[0034]In a preferred embodiment, in the step of pulverizing the R-T-Q rare earth magnet, fine pulverization of the R-T-Q rare earth magnet is performed by using a high-speed flow of an inert gas.\n\n[0035]In a preferred embodiment, a concentration of the oxygen is adjusted to be not lower than 0.05 vol. %, nor higher than 3 vol. %.\n\n[0036]The production method of the present invention is a production method of a sintered magnet comprising the steps of: producing a compaction of the material alloy powder for the R-T-Q rare earth magnet produced by the above-described production method; and sintering the compaction.\n\n[0037]In a preferred embodiment, the material alloy powder for the R-T-Q rare earth magnet is constituted by a plurality of kinds of material alloy powders including different contents of rare earth element R.\n\nBRIEF DESCRIPTION OF DRAWINGS\n\n[0038]FIG. 1 is a schematic diagram illustrating a structure of a rapidly solidified alloy (alloy A)\n\n[0039]FIG. 2 is a schematic diagram illustrating a structure of an ingot alloy (alloy B).\n\n[0040]FIG. 3 is a diagram illustrating an alloy structure after thermal treatment at 600° C. for 1 hour is performed for the quenched alloy (alloy A) in an Ar atmosphere.\n\n[0041]FIG. 4 is a diagram illustrating an alloy structure after thermal treatment at 600° C. for 1 hour is performed for the ingot alloy (alloy B) in an Ar atmosphere.\n\n[0042]FIG. 5 is a diagram illustrating an alloy structure after thermal treatment at 800° C. for 1 hour is performed for the quenched alloy (alloy A) in an Ar atmosphere.\n\n[0043]FIG. 6 is a diagram illustrating a structure of a sintered magnet produced from powder of the rapidly solidified alloy (alloy A) for which the thermal treatment at 600° C. for 1 hour is performed.\n\n[0044]FIG. 7 is a diagram illustrating a structure of a sintering magnet produced from powder of the rapidly solidified alloy (alloy A) for which the thermal treatment at 600° C. for 1 hour is omitted, as a comparative example.\n\nBEST MODE FOR CARRYING OUT THE INVENTION\n\n[0045]In the present invention, first, a molten alloy of an R-T-Q rare earth alloy (R is a rare earth element, T is a transition metal element, and Q is at least one element selected from the group consisting of B, C, N, Al, Si, and P) is prepared. The R-T-Q rare earth alloy contain, as the rare earth element R, at least one kind of element RL selected from the group consisting of Nd and Pr, and at least one kind of element RH selected from the group consisting of Dy, Tb, and Ho. Next, the molten alloy having the above-mentioned composition is rapidly solidified, so as to produce a rapidly solidified alloy.\n\n[0046]The inventors of the present invention found that the element RH positioned in the grain boundary phase of the rapidly solidified alloy was moved into the main phase by holding the rapidly solidified alloy in the temperature range of 400° C. or higher and lower than 800° C. for a period of not shorter than 5 minutes nor longer than 12 hours, so that the element RH could be concentrated in the main phase, and the inventors invented the present invention.\n\n[0047]According to the experiments of the inventors, in order to move element RH from the grain boundary phase to the main phase in a relatively low temperature range of 400° C. or higher and lower than 800° C., it is necessary that the structure of the rapidly solidified alloy is fine. It is preferred that the rapidly solidified alloy having such a fine structure be produced by cooling a molten alloy at a speed of not lower than 101° C./sec. nor higher than 104° C./sec. by means of a rapidly solidifying method such as a strip casting method. More preferably, the rapidly solidifying speed is 102° C./sec. or higher. The production method of a quenched alloy by the strip casting method is disclosed in U.S. Pat. No. 5,383,978, which is incorporated in this specification.\n\n[0048]Conventionally, it was tried that thermal treatment at high temperatures for a long time was performed for an alloy produced by an ingot method, so as to reduce an amount of unnecessary α-Fe existing in the alloy. However, the alloy produced by the rapidly solidifying method such as the strip casting method included almost no α-Fe, so that such thermal treatment was not required. In addition, the rapidly solidified alloy had an advantage that the crystal structure was fine, as compared with the ingot alloy. Thus, there existed a technical common sense that the thermal treatment which might cause the crystal structure to be coarse was not preferable for the rapidly solidified alloy.\n\n[0049]The inventors were free from such a technical common sense, and found that thermal treatment in an appropriate temperature range could concentrate element RH existing in the grain boundary into the main phase, so as to efficiently improve the coercive force.\n\n[0050]According to the experiments by the inventors, in order to improve the coercive force, it was found that it was extremely important to control the oxygen concentration in an atmosphere when the rapidly solidified alloy was pulverized. Especially when the hydrogen decrepitation process is performed before the fine pulverization process, the fine pulverization process is preferably performed in an inert gas because the grain boundary phase portion is easily exposed on the powder surface, and the oxygen concentration in the inert gas is preferably adjusted to be 1 vol. % or less. If the oxygen concentration in the atmospheric gas becomes high so as to exceed 1 vol. %, the powder grains are oxidized during the fine pulverization process, and part of the rare earth elements is disadvantageously consumed for the generation of oxide. If a lot of rare earth oxides which do not contribute to the magnetic properties are generated in the material alloy powder for the rare earth magnet, the existence ratio of the R2T14Q based crystal phase as the main phase is lowered, so that the magnetic properties are deteriorated. In addition, an oxide of the element RH is easily generated in the grain boundary, so that the concentration of the element RH in the main phase is lowered. p Such fine pulverization can be performed by using a pulverization apparatus such as a jet mill, an attriter, or a ball mill. The pulverization by a jet mill is disclosed in U.S. Pat. No. 6,491,765 which is incorporated in this specification.\n\n[0051]Hereinafter preferred embodiments of the present invention will be described.\n\n[0052]First, a molten alloy of R-T-Q rare earth alloy is prepared. The rare earth element R contains at least one kind of element RL selected from the group consisting of Nd and Pr, and at least one kind of element RH selected from the group of Dy, Tb, and Ho. In order to attain an effect of sufficiently improving the coercive force, the mole fraction (mole ratio) of element RH in the whole of the rare earth element is set to be 10% or more.\n\n[0053]In a preferred embodiment, the content of the rare earth element R is not less than 11 at % nor more than 17 at % of the whole of the alloy. The element RH which contributes to the improvement in the coercive force accounts for 10 at % or more of the whole of the rare earth element R.\n\n[0054]The transition metal element T includes Fe as a main component (50 at % or more of the total of T), and the residual portion may include a transition metal element Co and/or Ni, or the like. The content of the transition metal element T is not less than 75 at % nor more than 84 at % of the whole of the alloy.\n\n[0055]The element Q contains B as a main component, and may contain at least one element selected from the group consisting C, N, Al, Si, and P which can be substituted for B (boron) in an Nd2Fe14B crystal structure of tetragonal system. The content of the element Q is not less than 5 at % nor more than 8 at % of the whole of the alloy.\n\n[0056]To the alloy, at least one additive element M selected from the group consisting of Ti, V, Cr, Mn, Ni, Cu, Zn, Ga, Zr, Nb, Mo, In, Sn, Hf, Ta, W, and Pb may be added, in addition to the above-mentioned main elements.\n\n[0057]The molten alloy of the material alloy having the above-mentioned composition is brought into contact with a surface of a cooling roll of a strip casting apparatus, so as to rapidly solidify the molten alloy. A preferred range of the rotation speed (a surface peripheral velocity) of the cooling roll is not lower than 0.3 m/sec. nor higher than 10 m/sec. Accordingly, the molten alloy can be quenched at a cooling speed of not lower than 101° C./sec. nor higher than 104° C./sec.\n\n[0058]In the rapidly solidified alloy (the strip cast alloy) which is prepared in the above-described manner, an R2T14Q phase is formed as a main phase (R is a rare earth element, T is a transition metal element, and Q is at least one element selected from the group consisting of B, C, N, Al, Si, and P). The R2T14Q phase is a needle-like crystal having a size in a short axis direction of not smaller than 3 μm nor larger than 10 μm, and having a size in a long axis direction of not smaller than 10 μm nor larger than 300 μm. In a condition immediately after the rapidly solidifying (as-spun), the concentration of the element RH in the R2T14Q phase is substantially at the same level as the concentration of the element RH in other phases than the R2T14Q phase (such as a grain boundary phase).\n\n[0059]Next, for the rapidly solidified alloy obtained by the strip casting method, thermal treatment process in which the alloy is held at temperatures in the range of 400° C. or higher and lower than 800° C. for a period of time of not shorter than 5 minutes nor longer than 12 hours is performed. A preferred temperature range of the thermal treatment is not lower than 400° C. nor higher than 700° C., and a more preferably temperature range is not lower than 500° C. nor higher than 650° C. The thermal treatment is preferably performed in such a manner that the material alloy which is once cooled to a temperature at which the dispersion of element does not occur (about 300° C., for example) is heated again in a furnace other than the rapidly solidifying apparatus.\n\n[0060]By way of the above-mentioned thermal treatment, the element RH existing in the grain boundary phase is moved to the R2T14Q phase as the main phase, and concentrated in the R2T14Q phase. As a result, in the obtained alloy, the concentration of the element RH in the R2T14Q phase is higher than the concentration of the element RH in other phases than R2T14Q phase.\n\n[0061]Next, the alloy after the thermal treatment is embrittled by a hydrogen decrepitation method. Thereafter, the alloy is pulverized into fine powder by using a pulverization apparatus such as a jet mill. An average particle size (FSSS particle size) of the obtained dry-type powder is about 3.0 to 4.0 μm. In the jet mill, the material alloy is pulverized by using high-speed flow of an inert gas into which a predetermined amount of oxygen is introduced. The oxygen concentration in the inert gas is preferably adjusted to be 1 vol. % or less. More preferably, the oxygen concentration is 0.1 vol. % or less.\n\n[0062]In the present invention, the reason why the oxygen concentration in the atmosphere for the pulverization is limited is that the element RH moved from the grain boundary phase to the main phase is not moved again to the grain boundary phase portion nor deposited there by the oxidation. If a lot of oxygen is included in the powder, the heavy rare earth element RH such as Dy, Tb, and Ho is tend to be coupled with oxygen so as to generate a stable oxide. In the alloy structure used in the present invention, oxygen is more distributed in the grain boundary phase than in the main phase. Therefore, it is considered that element RH in the main phase is dispersed again to the grain boundary phase, and consumed for the generation of oxide. If element RH flows out of the main phase, the sufficient improvement in the coercive force cannot be realized, so that in the pulverization process and a sintering process which will be described next, it is desired that the oxidation of powder be appropriately suppressed.\n\n[0063]Next, by using a powder press apparatus, the powder is compressed in an alignment magnetic field, so as to form a desired shape. The thus-obtained powder compaction is sintered in an inert gas atmosphere of not lower than 10−4 Pa nor more than 106 Pa. It is desired that the sintering process is performed in the atmosphere in which the oxygen concentration is limited to be a predetermined level or less, so that the oxygen concentration included in a sintered body (a sintered magnet) is 0.3 mol % or less.\n\nEMBODIMENTS\n\n[0064]First, a molten alloy having a composition of 22% Nd-10% Dy-0.25% Al-0.05% Cu-1.0% B-the residual portion Fe in mass ratios was rapidly solidified by a strip casting method, so as to produce a quenched and solidified alloy with the above-mentioned composition (alloy A). As a relative example, an alloy (alloy B) was produced by an ingot method. FIG. 1 and FIG. 2 are schematic diagrams showing structures of the alloy A and the alloy B, respectively. In the attached figures, Dy is schematically shown as dots. As shown in FIG. 1, in the alloy A, Dy uniformly exists in the main phase and the grain boundary phase. As is seen from the comparison between FIG. 1 and FIG. 2, the amount of Dy existing in the grain boundary phase is larger in the alloy A than in the alloy B.\n\n[0065]Next, for the alloys A and B, thermal treatment at 600° C. for 1 hour was performed in an Ar atmosphere. Structures of the alloys before and after the thermal treatment are shown in FIG. 3 and FIG. 4, respectively. As shown in FIG. 3 and FIG. 4, in the alloy A, the concentration of Dy existing in the grain boundary phase is lowered. This is because Dy existing in the grain boundary phase is moved to the main phase by the thermal treatment, and concentrated in the main phase.\n\n[0066]For reference purposes, for the alloy A, thermal treatment at 800° C. for 1 hour was performed in an Ar atmosphere. In this case, as shown in FIG. 5, Dy is moved from the grain boundary phase to the main phase, and concentrated in the main phase. However, the size of crystal grains constituting the main phase is increased to some extent.\n\n[0067]Next, after the hydrogen decrepitation process (coarse pulverization) was performed for the alloys, fine pulverization of airflow type using a jet mill was performed, so as to produce alloy powder. The pulverizing atmosphere in the jet mill was a nitrogen gas, and the oxygen concentration in the pulverization atmosphere was adjusted to be 0.1 vol. % or less. Thereafter, with a powder press apparatus, the alloy powder was compressed and compacted in an alignment magnetic field, so as to produce a compacted body of alloy powder. Thereafter, for the powder compaction, vacuum sintering and aging treatment were performed, so as to manufacture a sintered magnet.\n\n[0068]FIG. 6 shows a structure of a sintered magnet manufactured from the powder of the alloy A. As is seen from the figure, Dy is still concentrated in the main phase.\n\n[0069]On the other hand, as a comparative example, a structure of a sintered magnet manufactured from the alloy A for which the thermal treatment at 600° C. for 1 hour is omitted is shown in FIG. 7. As is seen from the figure, an oxide is generated in the grain boundary phase. In the oxide, a relatively large amount of Dy which is oxidized exists, so that the Dy concentration in the main phase is lowered.\n\n[0070]Table 1 shows composition ratios (mass ratios) of the alloy in the following respective stages, in respective elements included in the alloy A for which the thermal treatment at 600° C. for 1 hour is performed.[0071]Material alloy before hydrogen decrepitation process[0072]Alloy powder immediately after fine pulverization process by a jet mill[0073]Sintered body after the completion of sintering process\n\n[0074]TABLE 1NdPrDyFeCoCuAlBOM', '技术领域\n\n[0001]稀土磁体及其制备方法技术领域本发明涉及稀土磁体及其制备方法。\n\n背景技术\n\n[0002]目前,两种稀土磁铁:钐/钴基磁铁,钕/铁/硼基磁铁广泛用于各种领域。钕,基于铁/硼的磁体具有各种磁体的最高磁能产物,其价格相对较低,因此钕/铁/硼基磁体在各种电子设备中呈正采用。\n\n[0003]基于钕/铁/硼的磁铁是具有ND的磁铁2Fe.14B晶体作为主相,并且在某些情况下,磁体在本文中更通常被称为“RTB磁体”,R是稀土元素和/或Y(钇),T主要是Fe和过渡金属由Ni和Co表示,B是硼。诸如C,N,Al,Si和/或P的元素可以代替B的一部分,因此,在本说明书中,至少一种选自B,C,N,Al,Si的组的至少一种元素并且P由“Q”表示,并且称为“钕/铁/硼基磁体”的稀土磁体被广泛称为“RTQ稀土磁体”。在R-T-Q稀土磁铁中,R2T.14Q晶粒构成主阶段。\n\n[0004]用于R-T-Q稀土磁铁的材料合金的粉末通常通过包括第一粉碎过程的方法制备,其中材料合金粗地粉碎,以及第二粉碎过程,其中材料合金是细微粉碎的。例如,在第一粉碎过程中,材料合金粗地粉碎,以便具有氢气衰减过程的数百微米或更小的尺寸。此后,在第二粉碎过程中,粗粉碎的材料合金(粗粉碎的粉末)被精细粉碎,以借助于喷射磨机粉碎装置等具有约几微米的平均粒径。\n\n[0005]为磁铁制备材料合金有两种常规方法。第一方法是一种铸锭铸造方法,其中将预定组合物的熔融合金放入铸模中,并且相对缓慢冷却。第二种方法是由条带铸造方法,离心铸造方法等表示的快速凝固方法,其中预定组合物的熔融合金与单辊,双辊,旋转盘,旋转圆柱形接触铸模等,并迅速冷却,从而由熔融合金制备比铸锭合金的固化合金薄。\n\n[0006]在快速凝固方法的情况下,熔融合金的冷却速度在例如不小于10的范围内1°C./sec。也不超过10个4°C./sec。通过快速凝固方法制备的淬火合金的厚度在不小于0.03mm,也不大于10mm。对于熔融合金,依次固化,其与冷却辊(辊接触面)接触的面部。因此,晶体从厚度方向上从辊接触面生长成柱状形状(针状形状)。结果,快速凝固的合金具有细晶结构,包括r2T.14Q晶相的短轴尺寸不小于3μm,也不大于10μm,长轴尺寸不小于10μm,也不大于300μm,以及富级相(其中浓度的相位)一种稀土元素R是相对较高的),其分散在R的晶界中2T.14Q晶相。 R富族的相是非磁性相,其中稀土元素R的浓度相对较高,并且其厚度(对应于晶界的宽度)为10μm或更小。\n\n[0007]快速凝固的合金在相对较短的时间内冷却,使得结构是细的,并且与通过传统铸锭铸造方法制备的合金(铸锭合金)相比,晶粒尺寸小(模具铸造方法)。此外,晶粒边界的区域宽,因为晶粒被精细分散,并且R-的相位在分散性上优异,因为富型相位在晶界中稀薄地展开,因此烧结程度提高了烧结程度。因此,在待制备具有优异性质的R-T-Q稀土烧结磁体的情况下,使用快速凝固的合金作为材料。\n\n[0008]在稀土合金(特别是在淬火合金中)封闭氢气的情况下,通过所谓的氢粉碎过程(在本说明书中,这种粉碎方法称为粗粉碎“氢衰减过程”),位于晶界中的R富相位与氢气反应并膨胀,从而从富型相(晶界部分)的一部分发生裂缝倾向于发生裂缝。因此,R富型相位经常出现在通过稀土合金的粉煤化获得的粉末的晶粒表面中。在快速凝固的合金的情况下,使R富型相对于细,分散性高,使得富氢的相尤其暴露在通过氢粉碎得到的功率的表面中。\n\n[0009]通过氢气减排方法公开了上述粉碎方法在美国专利No.在本说明书中包含的美国专利号6,403,024。\n\n[0010]在已知的技术中,为了增加这种RTQ稀土磁体的矫顽力,Dy,Tb和/或Ho被取代为稀土元素R的一部分。在本说明书中,至少一种选自该组的元素由dy,tb和ho组成由r表示H。\n\n[0011]但是,元素rH 添加到R-T-Q稀土磁铁的材料合金不仅存在于r中2T.14Q相作为主阶段,而且在晶界相中,在熔融合金的快速凝固后。存在于晶界阶段的元素R涉及元素R的问题H 没有促进胁迫的增加。\n\n[0012]还有另一个问题是很多元素r的存在H 在晶界中,烧结程度恶化。当元素r的比率时,问题是严重的H 在材料合金中为1.5at%以上,在该比率为2.0at%以上的情况下,问题是显着的。\n\n[0013]通过氢衰减过程和细粉化方法容易地将快速固化合金的晶界相部分容易地制成超细粉(粒径:1μm或更小)。即使该部分未制成细粉末,也可以容易地构造暴露的粉末表面。这种超细粉末可能很容易导致氧化和点火问题,并且严重影响烧结,从而在粉碎过程中除去超细粉末。暴露在粒径为1μm或更大的粉末颗粒表面上暴露的稀土元素易于氧化。另外,元素rH 与Nd和Pr相比,容易氧化,使元素rH 存在于合金的晶界相中,形成稳定的氧化物,并未取代稀土元素R作为主阶段。因此,在晶界相中容易保持隔离条件。\n\n[0014]如上所述,存在一个问题,在元素r中H 在淬火合金中,为了改善矫顽力,没有有效地使用在晶界相中存在的部分。元素R.H 是一个稀有元素,很昂贵。出于这些原因,在有效利用资源和降低生产成本的观点中,强烈要求避免上述废物。\n\n[0015]日本公开专利公开No.61-253805公开了一种以氧化物形式添加Dy的技术,并且在烧结期间,Dy分散在主相的表面中,因此可以获得高矫顽力少量Dy。然而,根据该技术,不贡献矫顽力的Dy氧化物残留在晶界相中,使得Dy的使用量不能充分降低。\n\n[0016]日本公开专利公开No.3-236202公开了一种方法,除Dy外,还添加了Sn的技术,使得存在于晶粒边界相中的Dy浓缩到主阶段。然而,该技术涉及由于不贡献磁性的SN的存在而降低了主阶段的存在比率的问题,从而降低了饱和磁化强度。另外,Dy保留在晶界相中作为氧化物,使得Dy浓缩到主阶段的效果几乎没有。\n\n[0017]通常提出通过添加Al,Cu,Cr,Ga,Nb,Mo,V等通过添加Al,Cu,Cr,Ga,Nb,Mo,V等来改善矫顽力的技术。然而,任何元素的添加导致不贡献磁性的相位的产生,从而存在存在诸如饱和磁化的问题降低,或者主相的磁化降低。\n\n[0018]日本公开专利公开No.5-33076公开了一种技术,其中对于合金铸块,对不低于400℃的温度不低于400℃的热处理。主相晶被引导至指定的方向。\n\n[0019]日本公开专利公开No.8-264363公开了一种技术,其中在不低于800℃的温度下的热处理后,对于通过带钢铸造方法,晶粒分布产生的合金进行的合金进行了高于1100℃。在粉碎后得到改善之后,使磁性变化得到改善。然而,如果执行这种温度的热处理,则丢失具有条带铸造方法的优点的微结构损失,从而在粉末的晶粒分布的情况下降低矫顽力。认为烧结程度也降低。\n\n[0020]日本公开专利公开No.10-36949公开了一种技术,其中当通过条带铸造方法冷却熔融合金时,冷却速度限制为1℃/米。在合金温度从800℃降低至600℃的温度范围内或更少,以便进行缓慢的冷却。根据该方法,描述了主阶段的比率增加,并且改善了烧结磁体的残余磁化。然而,未描述矫顽力的改善。\n\n[0021]根据发明人的实验,发现,特别是当通过快速固化熔融合金制备快速固化的合金时,在晶粒边界相中存在。认为,由于熔融合金的固化过程在元素r之前完成了这种现象H 在主阶段的稀土元素r的晶格位置(遗址)下降。因此,如果在带铸造方法等的快速凝固合金之前进行氢转化处理,则在碎屑铸造方法等的速度粉碎,则大量元素RH 存在于晶界阶段的浪费损失。因此,存在元素R的使用效率的问题H 进一步降低。另外,当元素rH 包括在晶界相的合金中增加,烧结程度降低,因此需要增加烧结温度。\n\n[0022]鉴于上述现有技术进行了本发明。本发明的主要目的是提供一种R-Fe-Q稀土磁铁,有效地使用时,有效地改善了矫顽力,而有效地使用Dy,Tb和Ho。\n\n[0023]本发明的另一个目的是提供一种用于R-Fe-Q稀土磁体的材料合金的生产方法,以及使用合金粉末的烧结磁体的制造方法。\n\n发明内容\n\n[0024]本发明的稀土永磁体是含有R的稀土永磁体2T.14Q相(R是稀土元素,T是过渡金属元素,并且Q是选自B,C,N,Al,Si和P的基团的至少一个元素,作为主阶段,其中稀土元素至少包含一种元素rL 选自由ND和PR组成的组,至少一种元素R.H 选自DY,TB和HO,元素R.H 占包含稀土元素总量的10%或更多,以及元素r的摩尔分数H 包括在r2T.14Q相位大于元素R的摩尔分数H 总共含有稀土元素。\n\n[0025]在一个优选的实施方案中,元素R的摩尔分数H 包括在r2T.14Q相位大于元素摩尔摩尔分数的1.1倍H 总共含有稀土元素。\n\n[0026]在优选的实施方案中,稀土元素R为11at%以上,并且总量的17个以%或更少,过渡金属元素T为75at%以上,84个以%或更少的总量,元件Q为5at%以上,总数为8%或更少。\n\n[0027]在优选的实施方案中,稀土永磁体还含有至少一种选自Ti,V,Cr,Mn,Ni,Cu,Zn,Ga,Zr,Nb,Mo,In,Sn,的添加剂元素M. HF,​​TA,W和PB。\n\n[0028]本发明的R-T-Q稀土永磁体的材料合金是含有R-T-Q稀土永磁体的材料合金2T.14Q相(R是稀土元素,T是过渡金属元素,并且Q是选自B,C,N,Al,Si和P的基团的至少一个元素,作为主阶段,其中稀土元素至少包含一种元素rL 选自由ND和PR组成的组,至少一种元素R.H 选自DY,TB和HO,r2T.14Q相是针状晶体,其尺寸在短轴方向上的尺寸不小于3μm,且长度为10μm,尺寸在不小于10μm,或超过300μm的长轴方向上尺寸元素R.H 占含有稀土元素总数的%或更多的10%或更多,并占元素r的浓度H 在r.2T.14Q相高于元素r的浓度H 在除了r以外的阶段2T.14q阶段。材料合金优选包括r2T.14q期为80克拉%以上。\n\n[0029]本发明的制备方法是RTQ稀土磁体的材料合金的制造方法,包括:制备RTQ稀土合金的熔融合金的步骤(R是稀土元素,T是过渡金属元件并且Q是选自B,C,N,Al,Si和P)的至少一个元素,稀土元素R至少包含一种元素R.L 选自由ND和PR组成的组,至少一种元素R.H 选自DY,TB和HO;快速固化熔融合金的冷却步骤,从而产生快速凝固的合金;和在400℃或更高且低于800℃的温度范围内保持淬火和凝固合金的热处理步骤,不超过5分钟,也不长于12小时。\n\n[0030]在优选实施例中,冷却步骤包括通过使用旋转冷却辊冷却熔融合金的步骤。\n\n[0031]在优选的实施方案中,冷却步骤包括以不低于10的冷却速度冷却熔融合金的步骤1°C./sec。也不高于104°C./sec。\n\n[0032]在优选实施例中,冷却步骤由带材铸造方法进行。\n\n[0033]本发明的制造方法是用于RTQ稀土磁体的材料合金粉末的生产方法,包括以下步骤:通过通过氢分配方法采用上述生产方法产生的基于RTQ的稀土磁铁的材料合金;并粉碎基于R-T-Q稀土磁铁的脆性材料合金。\n\n[0034]在优选实施例中,在粉碎R-T-Q稀土磁体的步骤中,通过使用惰性气体的高速流动进行R-T-Q稀土磁体的细粉化。\n\n[0035]在优选的实施方案中,调节氧气的浓度不低于0.05体积。 %,也不高于3卷。 %。\n\n[0036]本发明的制造方法是烧结磁体的制造方法,包括以下步骤:通过上述生产方法生产的R-T-Q稀土磁体的材料合金粉末的压实;并烧结压实。\n\n[0037]在优选的实施方案中,R-T-Q稀土磁体的材料合金粉末由多种材料合金粉末构成,包括稀土元素R的不同含量。\n\n图纸简述\n\n[0038]如图。附图说明图1是表示快速固化合金(合金A)的结构的示意图\n\n[0039]如图。图2是示出铸锭合金(合金B)的结构的示意图。\n\n[0040]如图。图3是表示在600℃下热处理后的合金结构的图。在AR气氛中对淬火合金(合金A)进行1小时。\n\n[0041]如图。图4是表示在600℃下热处理后的合金结构的图。在AR气氛中对铸造合金(合金B)进行1小时。\n\n[0042]如图。图5是表示在800℃下热处理后的合金结构的图,在AR气氛中对淬火合金(合金A)进行1小时。\n\n[0043]如图。图6是示出由快速固化合金(合金A)的粉末产生的烧结磁体的结构的图,其中进行了600℃的热处理1小时。\n\n[0044]如图。图7是表示省略了由快速固化合金(合金A)的粉末制成的烧结磁体的结构的图,省略了在600℃下的热处理1小时。\n\n实施本发明的最佳方式\n\n[0045]在本发明中,首先,RTQ稀土合金的熔融合金(R是稀土元素,T是过渡金属元件,并且Q是选自B,C,N的组中的至少一个元素,准备al,si和p)。 R-T-Q稀土合金含有稀土元素R,至少一种元素R.L 选自由ND和PR组成的组,至少一种元素R.H 选自DY,TB和HO的组。接下来,迅速凝固具有上述组合物的熔融合金,以产生快速凝固的合金。\n\n[0046]本发明的发明人发现元素R.H 定位在快速凝固的合金的晶界相中通过在400℃或更高的温度范围和低于800℃的温度范围内储存快速凝固的合金而移动到主相中。一段时间不超过5分钟也没有长超过12小时,使元素rH 可以集中在主阶段,发明人发明了本发明。\n\n[0047]根据发明人的实验,为了移动元件rH 从晶界相到相对低的温度范围内的主相400℃或更高,低于800℃,需要快速固化的合金的结构是细的。优选的是,具有这种精细结构的快速固化合金通过以不低于10的速度冷却熔融合金来制备1°C./sec。也不高于104°C./sec。借助于诸如条带铸造方法的快速凝固方法。更优选地,快速凝固的速度为102°C./sec。或更高。通过条带铸造方法淬火合金的制造方法公开在美国专利No.5,512中。 No.5,383,978,其掺入本说明书中。\n\n[0048]通常,尝试了通过铸锭法生产的合金进行高温的热处理,以减少合金中存在的不必要的α-Fe。然而,通过快速固化方法生产的合金,例如条带铸造方法包括几乎没有α-Fe,因此不需要这种热处理。此外,与铸锭合金相比,迅速凝固的合金具有优点:晶体结构细晶体结构细。因此,对于快速凝固的合金,存在导致晶体结构可能导致晶体结构粗糙的热处理的技术常识。\n\n[0049]发明人没有这种技术常识,发现在适当的温度范围内的热处理可以浓缩元素rH 存在于晶界进入主阶段,以便有效地改善矫顽力。\n\n[0050]根据本发明人的实验,为了改善矫顽力,发现当粉碎快速固化的合金时,控制大气中的氧浓度非常重要。特别是当在细粉碎过程之前进行氢转储过程时,细粉碎过程优选在惰性气体中进行,因为晶界相位部分容易暴露在粉末表面上,并且优选调节惰性气体中的氧浓度是1卷。 % 或更少。如果大气气体中的氧浓度变高,则超过1 Vol。 %,粉末晶粒在细粉化过程中被氧化,并且部分稀土元素不利地消耗氧化物。如果在用于稀土磁铁的材料合金粉末中产生的大量稀土氧化物,用于稀土磁铁的材料合金粉末,则r的存在比2T.14基于Q基晶相随着主阶段降低,从而磁性变差。另外,元素r的氧化物H 在晶界中容易产生,使元素浓度rH 在主阶段降低。 P这样的细粉化可以通过使用诸如喷射磨机,吸引器或球磨机的粉碎装置来执行。喷射磨机的粉碎公开在美国专利No.4,522,587中。本说明书中的美国专利号6,491,765。\n\n[0051]下面将描述本发明的优选实施例。\n\n[0052]首先,制备R-T-Q稀土合金的熔融合金。稀土元素R至少包含一种元素rL 选自由ND和PR组成的组,至少一种元素R.H 选自DY,TB和HO组。为了实现充分改善矫顽力的效果,元素R的摩尔分数(摩尔比)H 在整个稀土元素中设定为10%以上。\n\n[0053]在优选的实施方案中,稀土元素R的含量不小于整个合金的%也不大于11at%,也不大于17%。元素R.H 这有助于胁迫力的改善占整个稀土元素R的%或更多的10%或更多。\n\n[0054]过渡金属元件T包括Fe作为主要成分(50at%以上的T),并且残留部分可包括过渡金属元素Co和/或Ni等。过渡金属元素T的含量不小于整个合金%的%,也不大于84%。\n\n[0055]元素Q含有B作为主要成分,并且可以含有选自C,N,Al,Si和P的组中的至少一种元素,其可以在ND中取代B(硼)2Fe.14四方系统的B晶体结构。元素Q的含量不小于整个合金%的%也不大于8%。\n\n[0056]对于合金,至少一种选自Ti,V,Cr,Mn,Ni,Cu,Zn,Ga,Zr,Nb,Mo,In,Sn,HF,Ta,W和Pb的添加剂元素M.除了上述主要元素之外,还可以添加。\n\n[0057]具有上述组合物的材料合金的熔融合金与条带铸造设备的冷却辊的表面接触,以便快速固化熔融合金。冷却辊的旋转速度(表面圆周速度)的优选范围不低于0.3米/秒。也不高于10米/秒。因此,熔融合金可以以不低于10的冷却速度淬灭1°C./sec。也不高于104°C./sec。\n\n[0058]在以上述方式制备的快速凝固的合金(条形铸合金)中,A r2T.14Q相形成为主相(R是稀土元素,T是过渡金属元素,并且Q是选自B,C,N,Al,Si和P)中选自的至少一个元素。 r.2T.14Q相是针状晶体,其尺寸在短轴方向上的尺寸不小于3μm,也不大于10μm,并且长轴方向的尺寸不小于10μm,也不大于300μm。在快速凝固(尽可能旋转)后立即的条件,元素r的浓度H 在r.2T.14Q相基本上与元素R的浓度相同的水平H 在其他阶段而不是r2T.14Q相(例如晶界阶段)。\n\n[0059]接下来,对于通过条带铸造方法获得的快速凝固合金,在400℃或更高的温度下和低于800℃的温度下保持合金的热处理过程。一段时间不短超过5分钟,也没有超过12小时。热处理的优选温度范围不低于400℃,也不高于700℃,更优选温度范围不低于500℃,也不高于650℃。热处理优选以这样的方式进行:一旦冷却到元素的分散不发生的温度(例如,例如,在除了快速固化装置之外的炉中再次加热而被冷却到该温度的方式。\n\n[0060]通过上述热处理,元素rH 在晶界阶段存在于r2T.14q阶段作为主阶段,并集中在r中2T.14q阶段。结果,在所获得的合金中,元素r的浓度H 在r.2T.14Q相高于元素r的浓度H 在其他阶段而不是阶段2T.14q阶段。\n\n[0061]接下来,热处理后的合金被氢析衰减方法脆化。此后,通过使用诸如喷射磨机的粉碎装置将合金粉碎成细粉末。所得干式粉末的平均粒度(FSSS粒径)约为3.0至4.0μm。在喷射磨机中,通过使用惰性气体的高速流动粉碎材料合金,其中引入预定量的氧气。惰性气体中的氧浓度优选将其调节为1体积。 % 或更少。更优选地,氧浓度为0.1体积。 % 或更少。\n\n[0062]在本发明中,为粉碎机大气中的氧浓度有限的原因是元件rH 从晶界相移动到主相位不会再次移动到晶界相位或通过氧化沉积在那里。如果粉末中包含大量氧气,则重稀土元素rH 如Dy,Tb和Ho倾向于与氧气偶联,以产生稳定的氧化物。在本发明中使用的合金结构中,氧气比在主阶段中分布在晶界相中。因此,它被认为是元素rH 在主阶段再次分散到晶界相,并消耗氧化物的产生。如果元素R.H 流出主阶段,不能实现矫顽力的足够改善,从而在接下来将描述的粉碎过程和烧结过程中,期望适当地抑制粉末的氧化。\n\n[0063]接下来,通过使用粉末压榨装置,粉末在取向磁场中被压缩,以形成所需的形状。将如此获得的粉末压实烧结在不低于10的惰性气体气氛中−4 PA也不超过106 PA。期望烧结过程在氧浓度被限制为预定水平或更小的大气中进行,从而包括在烧结体(烧结磁体)中的氧浓度为0.3摩尔%或更低。\n\n实施方式\n\n[0064]首先,通过条带铸造方法迅速凝固22%Nd-10%DY-0.25%Al-0.05%Cu-1.0%B-残留部分Fe的组合物的熔融合金。用上述组合物(合金A)淬火和凝固合金。作为相对实例,通过铸锭法生产合金(合金B)。如图。参照图1和图1。图2是示出合金A和合金B的结构的示意图。在附图中,Dy示意性地显示为点。如图1所示。如图1所示,在合金A中,Dy均匀地存在于主相和晶界相中。从图4之间的比较看。参照图1和图1。如图2所示,在晶界相中存在的Dy的量在合金B中的晶界相较大。\n\n[0065]接下来,对于合金A和B,在AR气氛中进行600℃的热处理1小时。热处理前后的合金的结构如图2所示。图3和图3。 4分别。如图1所示。图3和图3。如图4所示,在合金A中,降低了晶界相中存在的Dy的浓度。这是因为晶界相中存在的Dy通过热处理移动到主相,并浓缩在主阶段。\n\n[0066]出于参考目的,对于合金A,在AR气氛中进行800℃的热处理1小时。在这种情况下,如图所示。如图5所示,Dy从晶界相移动到主相,并浓缩在主阶段。然而,构成主阶段的晶粒的尺寸在一定程度上增加。\n\n[0067]接下来,在对合金进行氢转储过程(粗粉碎)之后,进行使用喷射磨机进行气流式的细粉碎,以产生合金粉末。喷射磨机中的粉碎气氛是氮气,粉碎气氛中的氧浓度调节至0.1体积。 % 或更少。此后,用粉末压榨机装置,将合金粉末压缩并压实在对准磁场中,以产生压实的合金粉末体。此后,对于粉末压实,进行真空烧结和老化处理,以制造烧结磁体。\n\n[0068]如图。图6示出了由合金A的粉末制成的烧结磁体的结构。如从图中所见,Dy仍然集中在主阶段。\n\n[0069]另一方面,作为比较例,省略了由600℃下热处理1小时的合金A制造的烧结磁体的结构。从图中看出,在晶界相中产生氧化物。在氧化物中,存在氧化的相对大量的Dy,使得主相中的Dy浓度降低。\n\n[0070]表1显示了以下各个阶段中合金的组合物比(质量比),其各自的合金A中包含在600℃的热处理1小时的合金A中。 [0071]氢气衰减过程中的材料合金[0072]射流研磨机后立即合金粉末[0073]烧结过程后烧结体\n\n[0074]\n\n  表格1 n PrdyFe.CO.铜 Al B O 材料 17.5 5.04 9.82 64.3 0.91 0.05 0.25 1.01 0.03 后 17.1 4.90 9.90 64.8 0.90 0.05 0.25 1.00 0.26 美好的 粉碎 化 烧结 17.0 4.90 9.90 64.9 0.91 0.05 0.25 1.00 0.28 身体\n\n[0075]从表1中,发现与粉碎前的比例相比,在细粉化后和烧结后的条件下的染量与烧结之后的比率。这意味着以下。由于在细粉化过程中,将材料合金的晶界阶段除以粉末作为超细粉末颗粒的粉末,因此消除了在晶界相中定位的Nd和Pr的一部分。相反,从这种消除中排除了从晶界相中浓缩到主相中的my,因此含量比相对增加。\n\n[0076]表1中所示的烧结体的磁性如表2所示。\n\n[0077]\n\n  表2.  Br HCB HCJ(BH)max  (T)(ka / m)(ka / m)(kj / m3)  1.118 879.1 2347 245.3\n\n[0078]烧结体中主相中的稀土元素的构成比和整个烧结体中稀土元素的构成比例示于表3中。\n\n[0079]\n\n  表3 n Prdy 主要阶段 53.15 13.31 33.53 全部的 55.18 16.28 28.52\n\n[0080]在本文中,在主阶段中包含的稀土元素中,Dy的摩尔分数由n表示m,并且烧结磁体总量的稀土元素中的摩尔分数由n表示t。在表3所示的示例中,nm/ N.t 是1.17,看来Dy浓缩。优选的是nm/ N.t 是1.15或更多。\n\n[0081]主阶段摩尔分数(nm)通过EPMA通过定量分析获得的值。烧结磁铁总量的摩尔分数(nt)是通过化学分析获得的值。\n\n[0082]下面显示的表4显示,对于在下列相应阶段中未进行(比较例),合金的组合物比(对比例),合金的组成比(质量比)的合金A显示。 [0083]氢气衰减过程中的材料合金[0084]射流研磨机后立即合金粉末[0085]烧结过程后烧结体\n\n[0086]\n\n  表4. n PrdyFe.CO.铜 Al B O 材料 17.5 5.04 9.82 64.3 0.91 0.05 0.25 1.01 0.03 后 17.1 4.94 9.81 64.9 0.91 0.05 0.24 1.00 0.24 美好的 粉碎 化 烧结 17.1 4.93 9.82 64.9 0.90 0.05 0.24 1.00 0.27 身体\n\n[0087]从表4中所见,在粉碎过程之后,与材料合金中的组成比相比,降低了Dy的组成比。理由被认为如下。由于省略了热处理,因此将晶界相的Dy留在晶界相中,并通过氢折叠过程和细粉化方法从粉末中除去。\n\n[0088]表4中所示的烧结体的磁性如表5所示。\n\n[0089]\n\n  表5.  HCB  HCJ (BH)max B.r(t)(ka / m)(ka / m)(kj / m3)  1.106 876.7 2220 240.5\n\n[0090]从表5中,发现比较例的磁性(尤其是矫顽力)差不等于表2中所示的磁性。\n\n[0091]烧结体(比较例)中主相中的稀土元素的构成比和稀土元素总量的烧结体中的总成分比例示于表6中。\n\n[0092]\n\n  表6. n Prdy 主要阶段 54.09 15.02 30.89 全部的 55.40 16.35 28.24\n\n[0093]从表6中,发现nm/ N.t 小于1.1,发现Dy不称为Dy在一个浓缩在主阶段的条件下。为了说,Dy集中在主阶段,是必要的m/ N.t 是1.1或更多。\n\n[0094]可以在使用惰性气体流动的喷射磨机粉碎后,使用氧气浓度调节为0.1Vol的情况下,在粉碎后,可以获得所有上述结果。 %或更少,烧结立即在粉末氧化尽可能多的环境中进行\n\n[0095]在比较例中,在喷射磨机细细粉碎后,将粉末留在空气中30分钟,并进行压实和烧结过程。对比较例进行了与上述相同的测量。结果将在下面描述。\n\n[0096]下面显示的表7显示,对于包含在600℃的热处理的合金A中的各种元素,在以下各个阶段中进行1小时的热处理,组成比(质量比)。 [0097]合金粉末在空气中留下[0098]烧结过程后烧结体\n\n[0099]\n\n  表7. n PrdyFe.CO.铜 Al B O 美好的 16.9 4.87 9.89 64.6 0.89 0.04 0.24 0.99 0.54 粉末 烧结 16.9 4.89 9.90 64.6 0.90 0.04 0.25 1.00 0.53 身体\n\n[0100]从表7中,发现与上述情况相比,氧的比例加倍。表7中所示的烧结体的磁性如表8所示。\n\n[0101]\n\n  表8.  Br HCB  HCJ (BH)max  (T)(ka / m)(ka / m)(kj / m3)  1.101 864.2 2109 237.8\n\n[0102]如从表8所见,与上述示例相比,磁性变差。表9中示出了烧结体中烧结体中主相和稀土元素的构成比的稀土元素的构成比。\n\n[0103]\n\n  表9. n Prdy 主要阶段 54.80 16.05 29.15 全部的 55.06 16.31 28.63\n\n[0104]从表9开始,发现摩尔分数(nm)主相中含有的稀土元素中的Dy基本上等于摩尔分数(nt)在烧结磁体的总共含有稀土元素中的Dy。从结果中,认为附着在粉末颗粒表面的氧气被认为是附着在粉末颗粒表面的氧气与烧结中的晶界处的Dy耦合,从而执行分散的功能从主阶段到晶界阶段。因此,即使在其中的Dy通过热处理集中在主相中的情况下,如果Dy组成的氧化中的氢爆裂过程和微粉碎工序的进行,在主相中的Dy的浓度被不利地降低。在在不适当控制氧浓度的大气中进行细粉碎的情况下,在主阶段中的Dy浓度的降低也发生。\n\n[0105]在本发明中,如上所述,在适当的范围内调节细粉化过程中的氧浓度,从而抑制了Dy进入晶界的分散,可以有效地实现矫顽力的改善。\n\n工业实用性\n\n[0106]根据本发明,重稀土元素rH 例如Dy添加了改善矫顽力,元素rH 在晶界部分中定位在晶界部分中通过热处理在相对低的温度下浓缩,并且由于元素R的氧化而重新分布到晶界相中H 被抑制,使重稀土元素rH 在没有任何废物的情况下,可以有效地使用这是罕见的,并且可以有效地改善矫顽力。');
INSERT INTO `os_patent_instruction_text` VALUES (12934, 22763, 'TECHNICAL FIELD\n\n[0001]The present invention relates to an apparatus that can be used effectively to subject a block of a rare earth alloy to a hydrogenation process such as a hydrogen pulverization process, and also relates to a method for producing a rare earth sintered magnet using the apparatus.\n\nBACKGROUND ART\n\n[0002]A rare earth sintered magnet is produced by pulverizing a magnetic alloy into an alloy powder, compacting the alloy powder to obtain a green compact, sintering the green compact and then subjecting the sintered body to an aging treatment. Rare earth sintered magnets currently used extensively in various fields of applications include a samarium-cobalt (Sm—Co) type magnet and a neodymium-iron-boron type magnet (which will be herein referred to as an “R—T—(M)—B type magnet” but is also called an “R—Fe—B type magnet” normally). Among other things, the R—T—(M)—B type magnet is used more and more often in various types of electronic appliances. This is because the R—T—(M)—B type magnet exhibits a maximum energy product (BH)max that is higher than any of various other types of magnets, and yet is relatively inexpensive.\n\n[0003]In the general formula R—T—(M)—B of the neodymium-iron-boron type magnet, R is at least one of the rare earth elements including yttrium (Y) and is typically neodymium (Nd), T is either iron (Fe) alone or a mixture of Fe and a transition metal element, M is at least one additive, and B is either boron alone or a mixture of boron and carbon. More particularly, T is preferably either Fe alone or a mixture of Fe and at least one of Ni and Co. In the latter case, Fe preferably accounts for about 50 at % or more of T. The additive M is preferably at least one element selected from the group consisting of Al, Ti, Cu, V, Cr, Ni, Ga, Zr, Nb, Mn, Mo, In, Sn, Hf, Ta and W, and preferably accounts for about 1 mass % or less of the entire magnet. Also, where B is a mixture of boron and carbon, boron preferably accounts for about 50 at % or more of the mixture. R—T—(M)—B type sintered magnets, to which various preferred embodiments of the present invention are applicable, are described in U.S. Pat. Nos. 4,770,723 and 4,792,368, for example, which are hereby incorporated by reference.\n\n[0004]In the prior art, an R—T—(M)—B type alloy has been prepared as a material for such a magnet by an ingot casting process. In an ingot casting process, normally, rare earth metal, electrolytic iron and ferroboron alloy as respective starting materials are melted by an induction heating process, and then the melt obtained in this manner is cooled relatively slowly in a casting mold, thereby preparing an alloy ingot.\n\n[0005]Recently, a rapid cooling process such as a strip casting process or a centrifugal casting process has attracted much attention in the art. In a rapid cooling process, a molten alloy is brought into contact with, and relatively rapidly cooled and solidified by, the outer or inner surface of a single chill roller or a twin chill roller, a rotating chill disk or a rotating cylindrical casting mold, thereby making a rapidly solidified alloy, which is thinner than an alloy ingot, from the molten alloy. The rapidly solidified alloy prepared in this manner will be herein referred to as an “alloy flake”. The alloy flake produced by such a rapid cooling process normally has a thickness of about 0.03 mm to about 10 mm. According to the rapid cooling process, the molten alloy starts to be solidified from a surface thereof that has been in contact with the surface of the chill roller. That surface of the molten alloy will be herein referred to as a “roller contact surface”. Thus, in the rapid cooling process, columnar crystals grow in the thickness direction from the roller contact surface. As a result, the rapidly solidified alloy, made by a strip casting process or any other rapid cooling process, has a structure including an R2Fe14B crystalline phase and an R-rich phase. The R2Fe14B crystalline phase usually has a minor-axis size of about 0.1 μm to about 100 μm and a major-axis size of about 5 μm to about 500 μm. On the other hand, the R-rich phase, which is a non-magnetic phase including a rare earth element R at a relatively high concentration, is dispersed in the grain boundary between the R2Fe14B crystalline phases.\n\n[0006]Compared to an alloy made by the conventional ingot casting process or die casting process (such an alloy will be herein referred to as an “Ingot alloy”), the rapidly solidified alloy has been cooled and solidified in a shorter time (i.e., at a cooling rate of about 102° C./sec to about 104° C./sec). Accordingly, the rapidly solidified alloy has a finer structure and a smaller average crystal grain size. In addition, in the rapidly solidified alloy, the grain boundary thereof has a greater area and the R-rich phase is dispersed broadly and thinly in the grain boundary. Thus, the rapidly solidified alloy also excels in the dispersiveness of the R-rich phase. Because the rapidly solidified alloy has the above-described advantageous features, a magnet with excellent magnetic properties can be made from the rapidly solidified alloy.\n\n[0007]An alternative alloy preparation method called “Ca reduction process (or reduction-diffusion process)” is also known in the art. This process includes the steps of adding metal calcium (Ca) and calcium chloride (CaCl) to either the mixture of at least one rare earth oxide, iron powder, pure boron powder and at least one of ferroboron powder and boron oxide at a predetermined ratio or a mixture including an alloy powder or mixed oxide of these constituent elements at a predetermined ratio, subjecting the resultant mixture to a reduction-diffusion treatment within an inert atmosphere, diluting the reactant obtained to make a slurry, and then treating the slurry with water. In this manner, a solid of an R—T—(M)—B type alloy can be obtained.\n\n[0008]It should be noted that any small block of a solid alloy will be herein referred to as an “alloy block”. The “alloy block” may be any of various forms of solid alloys that include not only solidified alloys obtained by cooling a melt of a material alloy either slowly or rapidly (e.g., an alloy ingot prepared by the conventional ingot casting process or an alloy flake prepared by a quenching process such as a strip casting process) but also a solid alloy obtained by the Ca reduction process.\n\n[0009]An alloy powder to be compacted is obtained by performing the steps including coarsely pulverizing an alloy block in any of these forms by a hydrogen pulverization process, for example, and/or any of various mechanical milling processes (e.g., using a feather mill, power mill or disk mill), and finely pulverizing the resultant coarse powder (with a mean particle size of about 10 μm to about 1000 μm) by a dry milling process using a jet mill, for example. The alloy powder to be compacted preferably has a mean particle size of about 1.5 μm to about 7 μm to achieve sufficient magnetic properties. It should be noted that the “mean particle sizes” of a powder herein refers to a mass median diameter (MMD) unless stated otherwise. The coarse powder may also be finely pulverized by using a ball mill or attritor.\n\n[0010]The hydrogen pulverization process is a pulverization technique that utilizes the phenomenon that very small cracks are created in the rare earth alloy material (typically an alloy block) due to the volume expansion of the alloy material being exposed to a hydrogen gas atmosphere. This expansion is caused by the hydrogenation of the rare earth element that is included in the alloy material. Compared to the mechanical milling process, the hydrogen pulverization process increases the productivity and reduces the oxidation of the rare earth element in the subsequent processing and manufacturing steps. When a rapidly solidified alloy is used as the material alloy block, the alloy block can be coarsely pulverized by the hydrogen pulverization process to a size of about 1 mm or less (typically to a mean particle size of about 10 μm to about 1000 μm). On the other hand, where the material alloy block is an alloy ingot or a solid alloy that has been prepared by the reduction-diffusion process, the coarse powder obtained will have a mean particle size of about 1 cm.\n\n[0011]In the prior art, the hydrogen pulverization of an R—T—(M)—B type alloy is normally performed by filling a container, made of a stainless steel such as SUS304, with rare earth material alloy blocks and then subjecting the alloy blocks to hydrogen absorption and hydrogen desorption processes inside a hydrogen furnace.\n\n[0012]Specifically, first, the alloy blocks, stored in the container, are loaded into the hydrogen furnace, where a reduced-pressure atmosphere is created. Next, a hydrogen gas is supplied into the hydrogen furnace, thereby making the alloy blocks occlude (or absorb) hydrogen. In this hydrogen occlusion (or absorption) process, the rare earth element included in the alloy blocks is hydrogenated. The hydrogenated portions of the alloy blocks expand their volumes, thereby creating cracks there. Subsequently, after a predetermined amount of time has passed, the hydrogen gas is exhausted from the hydrogen furnace to create a reduced-pressure atmosphere inside the furnace. At the same time, the furnace is also heated to make the hydrogenated portions of the alloy blocks desorb hydrogen. Thereafter, an inert gas is introduced into the furnace, thereby cooling the resultant coarse powder. In this cooling process, to cool the coarse powder with the inert gas more efficiently, a gaseous flow may be produced inside the hydrogen furnace by a fan provided inside the hydrogen furnace. Also, to increase the efficiency of this cooling process, a container (hydrogen pulverization case) as disclosed by the applicant of the present application in U.S. Pat. No. 6,247,660 B1, which is hereby incorporated by reference, is preferably used.\n\n[0013]In the conventional hydrogen pulverization process, however, the hydrogen furnace cannot always maintain a completely airtight condition inside it. Thus, particularly while the hydrogen furnace has a reduced pressure inside, oxygen in the air should flow into the hydrogen furnace easily. But if oxygen is present inside the hydrogen furnace, then the rare earth element is oxidized, thus deteriorating the magnetic properties of sintered magnets to be obtained. For that reason, to minimize this unwanted oxidation, the gases should be introduced into, and exhausted from, the hydrogen furnace as quickly as possible. Also, to increase the productivity, the coarse powder needs to be cooled by the inert gaseous flow in the shortest possible time.\n\n[0014]However, in the conventional hydrogen pulverization process, if the gases are introduced or exhausted in too short a time or if the inert gas is supplied at an excessively high flow rate into the hydrogen furnace for the purpose(s) of minimizing the disadvantageous oxidation and/or increasing the cooling rate (or productivity), then the coarse powder, obtained by the hydrogen pulverization process, might be blown off and scattered inside the hydrogen furnace. The scattered powder is mostly composed of relatively small particles, which include the rare earth element at a rather high percentage. Accordingly, if these small particles are scattered, then the overall composition of the coarse powder inside the container is different from the intended or desired composition. As a result, the desired magnetic properties may not be achieved. Also, those powder particles, which have been blown off, scattered and left at various locations inside the hydrogen furnace, may be oxidized when the hydrogen furnace is opened and exposed to the air. In that case, those oxidized alloy powder particles may be mixed with a coarse powder of the next batch during the next hydrogen pulverization process. Then, a defective coarse powder like this may result in a partially incompletely sintered body (i.e., decrease in sintered density). That is to say, the scattering of those small powder particles in the hydrogen pulverization process adversely decreases the yield of the material. Furthermore, if a portion of the hydrogen furnace is made of carbon, then the amount of carbon included in the rare earth alloy material (i.e., the coarse powder) may increase, thus possibly deteriorating the magnetic properties of the resultant sintered magnets.\n\n[0015]Nevertheless, if the gases are introduced or exhausted, or the gaseous flow is produced, at rates that are too low to cause scattering of the small powder particles, then it takes too much time to cool the coarse powder obtained, thus decreasing the throughput. In addition, since a lot of air (or oxygen) should enter the furnace, the resultant magnetic properties may deteriorate, or in the worst-case scenario, the material might ignite.\n\n[0016]Among other things, the powder particles, obtained by subjecting a block of a rapidly solidified alloy to such a hydrogen pulverization process, are relatively fine and easily oxidizable and many of them are small powder particles that are easily scattered inside the furnace. Also, those fine powder particles are normally packed densely enough inside the container, and cannot be ventilated so easily with the inert gaseous flow. That is to say, those fine powder particles cannot be cooled so efficiently. Accordingly, to cool the fine powder particles almost as efficiently as coarse powder particles, the inert gas should be supplied at a relatively high flow rate because of this reason also. Thus, the above-described problems caused by the unintentional scattering of powder particles are particularly significant in a hydrogen pulverization process of an alloy block obtained by a rapid cooling process.\n\n[0017]These problems arise not only in the hydrogen pulverization process of a rare earth alloy block but also in any other hydrogenation process (e.g., HDDR process carried out to prepare a powder for an anisotropic bonded magnet).\n\nDISCLOSURE OF INVENTION\n\n[0018]In order to overcome the problems described above, preferred embodiments of the present invention provide an apparatus for subjecting a rare earth alloy to a hydrogenation process by which unwanted oxidation of the rare earth element is minimized sufficiently and productivity is increased significantly, and also provide a method for producing a rare earth sintered magnet using such an apparatus.\n\n[0019]A preferred embodiment of the present invention provides an apparatus for subjecting a rare earth alloy block to a hydrogenation process. The apparatus preferably includes a casing, a gas inlet port, a gas outlet port, a member arranged to produce a gaseous flow, and a windbreak plate. The casing preferably defines an inner space for receiving a container. The container preferably includes an upper opening and preferably stores the rare earth alloy block therein. A hydrogen gas and an inert gas are preferably introduced into the inner space through the gas inlet port and preferably exhausted from the inner space through the gas outlet port. A gaseous flow is preferably produced inside the inner space. The windbreak plate is preferably disposed upstream with respect to the gaseous flow that has been produced inside the inner space and preferably reduces a flow rate of the gaseous flow that has been produced near the upper opening of the container.\n\n[0020]In one preferred embodiment of the present invention, the container preferably further includes a bottom surface and side surfaces, and the windbreak plate preferably includes a shielding portion and at least one opening. The shielding portion is preferably located at a vertical level corresponding to that of the upper opening of the container. The at least one opening is preferably opposed to at least one of the side surfaces of the container.\n\n[0021]In this particular preferred embodiment, the container preferably includes at least one hollow pipe. The hollow pipe preferably connects together two of the side surfaces of the container and preferably has an inner surface that is substantially continuous with the two side surfaces. The two side surfaces are preferably opposed to the windbreak plate.\n\n[0022]More specifically, the at least one opening of the windbreak plate is preferably disposed so as to face the at least one hollow pipe.\n\n[0023]In still another preferred embodiment, the apparatus may further include a second windbreak plate. The second windbreak plate preferably includes a shielding portion that covers the upper opening of the container.\n\n[0024]In that case, the second windbreak plate preferably has at least one opening.\n\n[0025]Another preferred embodiment of the present invention provides an apparatus for subjecting a rare earth alloy block to a hydrogenation process. The apparatus preferably includes a casing, a member arranged to supply a gas and a windbreak plate. The casing preferably defines an inner space for receiving a container. The container preferably includes an upper opening and preferably stores the rare earth alloy block therein. An atmosphere inside the inner space is preferably controllable to a reduced-pressure state. A gas is preferably supplied into the inner space. The windbreak plate preferably reduces a flow rate of a gaseous flow that has been produced near the upper opening of the container.\n\n[0026]Still another preferred embodiment of the present invention provides a method for producing a rare earth sintered magnet. The method preferably includes the steps of preparing a container, which includes an upper opening and which stores a rare earth alloy block therein, pulverizing the rare earth alloy block into a coarse powder by performing a hydrogen pulverization process using the apparatus according to any of the preferred embodiments of the present invention described above, making a fine powder from the coarse powder, and compacting the fine powder to obtain a green compact and sintering the green compact.\n\n[0027]In one preferred embodiment of the present invention, the rare earth alloy block is preferably a rare earth alloy flake that has been obtained by subjecting a melt of a rare earth alloy to a quenching process.\n\n[0028]Other features, elements, characteristics, steps and advantages of the present invention will become more apparent from the following detailed description of preferred embodiments with reference to the attached drawings.\n\nBRIEF DESCRIPTION OF DRAWINGS\n\n[0029]FIG. 1 is a top view schematically illustrating a structure of a hydrogen pulverizer 100 according to a preferred embodiment of the present invention.\n\n[0030]FIG. 2 is a side view schematically illustrating the structure of the hydrogen pulverizer 100 shown in FIG. 1.\n\n[0031]FIG. 3 is a front view schematically illustrating the structure of the hydrogen pulverizer 100 shown in FIG. 1.\n\n[0032]FIG. 4 is a top view schematically illustrating the arrangement of containers 10 in the hydrogen pulverizer 100.\n\n[0033]FIG. 5 is a side view schematically illustrating the arrangement of the containers 10 in the hydrogen pulverizer 100.\n\n[0034]FIG. 6 is a front view schematically illustrating the arrangement of the containers 10 in the hydrogen pulverizer 100.\n\n[0035]FIG. 7A is a perspective view illustrating one of the containers 10 for use to store rare earth alloy blocks therein in various preferred embodiments of the present invention.\n\n[0036]FIG. 7B is a side view of the container 10, over which a cover 18 is disposed additionally, as viewed in the direction indicated by the arrow A in FIG. 7A.\n\n[0037]FIG. 8 is a plan view schematically illustrating a structure of a windbreak plate 50 provided for the hydrogen pulverizer 100.\n\n[0038]FIG. 9 is a graph showing an exemplary temperature profile for a hydrogen pulverization process.\n\nBEST MODE FOR CARRYING OUT THE INVENTION\n\n[0039]Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. In the following specific preferred embodiments, the present invention will be described as being applied to a hydrogen pulverization process of a rare earth alloy block. However, the present invention is in no way limited to the illustrative embodiments to be described below.\n\n[0040]FIGS. 1, 2 and 3 respectively illustrate a top view, a side view and a front view of a hydrogen pulverizer (which will also be herein referred to as a “hydrogen furnaces”) 100 according to a preferred embodiment of the present invention.\n\n[0041]The hydrogen pulverizer 100 includes a casing 30, gas inlet and outlet ports 32 and 34, a fan 40 and a windbreak plate 50. The casing 30 defines an inner space 20 in which multiple containers 10 (see FIG. 7, for example), including rare earth alloy blocks, are received. A hydrogen gas and an inert gas are introduced through the gas inlet port 32 into the inner space 20 and exhausted from the inner space 20 through the gas outlet port 34. The fan 40 is used as a member arranged to produce a gaseous flow inside the inner space 20. The windbreak plate 50 is disposed upstream with respect to the gaseous flow that has been produced inside the inner space 20. The windbreak plate 50 is provided to reduce a flow rate of the gaseous flow that has been produced around the upper opening 10a of each container 10. As used herein, the “gaseous flow” refers to the flow of an atmospheric gas that is present inside the inner space 20. The gaseous flow means the dynamic flow of any gas, no matter what type the gas is or what composition the gas has. It should be noted that the “strength” of the gaseous flow is herein represented by the flow rate or the pressure of the gaseous flow.\n\n[0042]As will be described in detail later with reference to FIG. 8, the windbreak plate 50 includes a shielding portion 50b at a vertical level corresponding to that of the upper opening 10a of one of the containers 10 that have been stored in the inner space 20. The windbreak plate 50 also includes at least one opening 50a that is opposed to a side surface 12 of the container 10. Thus, the windbreak plate 50 decreases the flow rate of the gaseous flow that has been produced around the upper opening 10a of the container 10 but increases that of the gaseous flow that has been produced around the side surface 12 of the container 10. Accordingly, it is possible to prevent the powder stored in the container 10 from being blown off by the gaseous flow that has been produced around the upper opening 10a thereof.\n\n[0043]The structure of the hydrogen pulverizer 100 will be described in further detail with reference to FIGS. 1, 2 and 3.\n\n[0044]As shown in FIGS. 1 and 2, the hydrogen pulverizer 100 preferably includes the casing 30 and a lid 36, which is opened and closed to load and unload the containers 10 into/from the inner space 20 of the casing 30 through an opening 30a of the casing 30. The inner space 20 to receive the containers 10 may be defined around the center of the casing 30 as a region in which the temperature, the pressure of the atmospheric gas and the flow rate of the gaseous flow are controlled to respective predetermined ranges. The casing 30 and the lid 36 are preferably made of a stainless steel such as SUS304L, SUS316 or SUS316L to decrease the brittleness to hydrogen. Also, the casing 30 preferably has an inner volume of about 3.0 m3 to about 5.2 m3.\n\n[0045]Inside the casing 30, a tube 22 and front and rear caps 24a and 24b are provided. The tube 22 may be made of a heat insulator (e.g., carbon) and has front and rear openings 22a and 22b. The front opening 22a is provided behind the front cap 24a, while the rear opening 22b is provided behind the rear cap 24b. The front and rear caps 24a and 24b are preferably made of the same heat insulator as the tube 22, and are opened and closed by opening/closing cylinders 25a and 25b, respectively. In FIG. 1, the front and rear caps 24a and 24b are illustrated as being closed over the one-dot chain (centerline) and opened under the one-dot chain.\n\n[0046]When the tube 22 and the front and rear caps 24a and 24b are closed, the tube 22 and the front and rear openings 22a and 22b form a hermetically sealed space, in which a heater 26 is provided to heat the inner space 20. As shown in FIG. 3, this heater 26 is disposed around the entire inner circumference of the tube 22 to heat the inner space 20 almost uniformly. The heater 26 may be made of carbon graphite, which has sufficient resistance to a hydrogen gas. As also shown in FIG. 3, upper and lower thermocouples 28a and 28b are provided to monitor the temperature of the inner space 20. By adjusting the quantity of electrical power supplied from electrodes 26a to the heater 26 in response to the outputs of the thermocouples 28a and 28b, the temperature inside the inner space 20 is controllable. It should be noted that the electrodes 26a also function as members for supporting the heater 26 thereon.\n\n[0047]The containers 10, including the rare earth alloy blocks, are mounted onto a rack 15 (see FIG. 4, for example), which is then loaded into the inner space 20. The hydrogen pulverizer 100 includes bottom guide rollers 62 for supporting the bottom of the rack 15 and rolling the rack 15 thereon as shown in FIG. 2, and also includes side guides 64 as shown in FIG. 1. By using these rollers 62 and guides 64, the rack 15 can be guided to a predetermined position inside the inner space 20. That is to say, the “inner space”20 is the space that is surrounded with the heater 26 and defined to store the rack 15 therein as described above. Optionally, multiple racks 15 may be loaded into this hydrogen pulverizer 100 and subjected to the hydrogen pulverization process simultaneously. The number of the containers 10 to be mounted on each rack 15 and the sizes of each rack 15 may be changed appropriately in view of the work efficiency to be achieved. In this preferred embodiment, four layers of three containers 10 are preferably mounted on each of the three racks 15 and then the three racks 15 are loaded into the inner space 20 one after another as shown in FIGS. 4, 5 and 6. That is to say, numerous rare earth alloy blocks, stored in the thirty-six containers 10 in total, are simultaneously subjected to the hydrogen pulverization process.\n\n[0048]Through the gas inlet port 32 of the casing 30, a hydrogen gas and an inert gas (e.g., Ar or He gas) are supplied into the casing 30. The gas inlet port 32 is connected to a cooler (not shown), which controls the temperatures of the gases supplied into the casing 30. The gases introduced are changed from one stage of the hydrogen pulverization process to another by operating valves (not shown), for example. On the other hand, the gas outlet port 34 is connected to an exhaust unit (not shown) such as a Roots pump or a hydraulic pump so that the gases are exhausted from the casing 30 through the gas outlet port 34. These gas introducing and exhausting members may be arranged as disclosed in Japanese Laid-Open Publication No. 2000-303107 (corresponding to U.S. Pat. No. 6,403,024, which is hereby incorporated by reference), for example. The hydrogen pulverizer 100 according to this preferred embodiment is preferably a batch processing type. However, the effects of the present invention are also achieved by providing the windbreak plate for an apparatus of a continuous processing type (e.g., continuous vacuum furnace FS series produced by ULVAC Corporation).\n\n[0049]As used herein, the “inert gas” may include reactive gases (e.g., oxygen gas and/or nitrogen gas) at very small percentages. However, the percentages of the oxygen gas and the nitrogen gas included in the “inert gas” are preferably no greater than about 5 mol % and no greater than about 20 mol %, respectively, and are more preferably about 1 mol % or less and about 4 mol % or less, respectively.\n\n[0050]The type and pressure of the atmospheric gas that is created inside the casing 30 are controllable according to a predefined program by adjusting the flow rates of the gases to be supplied into, and exhausted from, the casing 30. Also, the temperature of the atmospheric gas created inside the hydrogen pulverizer 100 is controllable by operating the heater 26 in accordance with a preset temperature profile while monitoring the output of a temperature sensor provided inside the furnace. The flow rate of the atmospheric gas is controlled by the fan 40 and the temperature of the atmospheric gas may be decreased by a cooler (cooling pipes) 42 disposed between the fan 40 and the inner space 20. Furthermore, the temperature of the inert gas may also be controlled by the cooler (not shown) connected to the gas inlet port 32. Such temperature controls may be performed by a controller (not shown).\n\n[0051]By turning the fan 40, a gaseous flow is produced as indicated by the arrows under the centerline in FIG. 1. This is because the gas that has been introduced through the gas inlet port 32 (see FIG. 2) into the gap between the casing 30 and the tube 22 has its channel limited by the tube 22, front and rear caps 24a and 24b and channel limiting walls 44a and 44b. \n\n[0052]The lid 36 of the hydrogen pulverizer 100 is closed at least during the hydrogen pulverization process, thereby keeping the space inside the casing 30 completely sealed hermetically during the hydrogen pulverization process. While the containers 10 (i.e., the racks 15) are being loaded or unloaded into/from this hydrogen pulverizer 100, the lid 36 of the hydrogen pulverizer 100 is lifted up by a driving mechanism (not shown), thereby exposing the opening 30a of the hydrogen pulverizer 100. FIG. 1 illustrates a state in which the lid 36 is closed. Since the casing 30 and the lid 36 have a mechanical strength high enough to resist both increased-pressure and reduced-pressure states inside the furnace, any of various types of hydrogenation processes can be carried out safely inside this hydrogen pulverizer 100.\n\n[0053]In this preferred embodiment, a number of containers 10, each having approximate dimensions of 300 mm×150 mm×500 mm, for example, are mounted onto the racks 15, which are then loaded into the inner space 20 as shown in FIGS. 4, 5 and 6. FIGS. 4, 5 and 6 are respectively a top view, a side view and a front view schematically illustrating the arrangement of the containers 10 that have been stored inside the inner space 20. These containers 10 that have been mounted on the racks 15 are spaced apart from each other both horizontally and vertically so as to allow the gas to flow easily between adjacent ones of the containers 10.\n\n[0054]The containers 10 and the racks 15 are preferably made of a stainless steel such as SUS304L, which exhibits desired low brittleness to hydrogen. The containers 10 are typically boxes and are preferably relatively shallow (e.g., having a depth of about 10 cm or less) to hydrogenate the rare earth alloy blocks uniformly. Also, even if the containers 10 are relatively deep boxes, the alloy blocks are preferably packed into the containers 10 so as to have a depth of about 10 cm as measured from the surface thereof. This is done to expose the widest possible surface area (preferably the entire area) of the alloy blocks to the hydrogen atmosphere uniformly. The reason is that if a shallow container 10 were filled with a lot of alloy blocks, then it might be difficult to subject those alloy blocks to the hydrogen pulverization process uniformly. Each of the racks 15 for supporting the containers 10 thereon preferably has a sufficient mechanical strength and preferably exposes the respective sides of the containers 10 as much as possible to maximize the area of the bottom or side surfaces of the containers 10 in which heat is directly exchanged with the atmospheric gas.\n\n[0055]The container 10 for storing the rare earth alloy blocks therein is preferably such as that shown in FIG. 7A and disclosed in U.S. Pat. No. 6,247,660 B1, which is hereby incorporated by reference.\n\n[0056]The body 11 of the container 10 preferably is a substantially rectangular parallelepiped box (with approximate dimensions of 500 mm×185 mm×85 mm, for example) having an elongated upper opening 10a to increase the mass-productivity. As shown in FIG. 7A, a partition 15 is provided at the approximate center of the body 11. To increase the heat transfer and dissipation effects, three hollow pipes 14, having an outer diameter of about 12 mm and an inner diameter of about 9 mm, are attached to the shorter side surfaces 12 of the conta', '技术领域 \n\n [0001] 稀土烧结磁体的制造方法技术领域本发明涉及一种能够有效地对稀土合金块进行氢粉碎等氢化处理的设备,并且涉及使用该设备的稀土烧结磁体的制造方法。 \n\n 背景技术 \n\n [0002] 通过将磁性合金粉碎成合金粉末,压实合金粉末以获得生坯,烧结生坯,然后对烧结体进行时效处理,来制造稀土烧结磁体。 当前在各种应用领域中广泛使用的稀土烧结磁体包括sa钴(Sm-Co)型磁体和钕铁硼型磁体(在本文中将其称为“ RT-(M)”  -B型磁铁”,但通常也称为“ R-Fe-B型磁铁”。 其中,RT-(M)-B型磁体越来越多地用于各种类型的电子设备中。 这是因为RT-(M)-B型磁体表现出最大的能量积(BH) 最高  它比任何其他类型的磁体都高,但相对便宜。 \n\n [0003] 在钕铁硼型磁体的通式RT-(M)-B中,R为包括钇(Y)的稀土元素中的至少一种,并且通常为钕(Nd),T为铁中的任一种。  (Fe)单独或Fe和过渡金属元素的混合物,M为至少一种添加剂,并且B为单独的硼或硼和碳的混合物。 更特别地,T优选为单独的Fe或Fe与Ni和Co中的至少一种的混合物。在后一种情况下,Fe优选占T的约50原子%以上。添加剂M优选为至少一种元素。 选自Al,Ti,Cu,V,Cr,Ni,Ga,Zr,Nb,Mn,Mo,In,Sn,Hf,Ta和W组成的组,并且优选地占约1质量%以下。 整个磁铁。 另外,当B是硼和碳的混合物时,硼优选占混合物的约50at%或更多。 适用于本发明的各种优选实施方式的RT-(M)-B型烧结磁体在美国专利No. 例如,第4,770,723号和第4,792,368号美国专利,通过引用将其合并于此。 \n\n [0004] 在现有技术中,已经通过铸锭法将RT-(M)-B型合金制备为用于这种磁体的材料。 在锭铸法中,通常,通过感应加热法将作为起始原料的稀土金属,电解铁和硼铁合金熔融,然后将这样得到的熔体在铸模中相对缓慢地冷却,从而制备合金。 锭。 \n\n [0005] 近来,诸如带材铸造工艺或离心铸造工艺的快速冷却工艺已在本领域引起了很多关注。 在快速冷却过程中,熔融合金与单个冷却辊或双冷却辊,旋转的冷却盘或旋转的圆柱形铸模的外表面或内表面接触并相对快速地冷却和固化, 从而由熔融合金制成比合金锭薄的快速凝固的合金。 以这种方式制备的快速凝固的合金在本文中将被称为“合金薄片”。 通过这种快速冷却过程产生的合金薄片通常具有约0.03mm至约10mm的厚度。 根据快速冷却过程,熔融合金从已经与冷却辊的表面接触的表面开始固化。 熔融合金的该表面在本文中将被称为“辊接触表面”。 因此,在快速冷却过程中,柱状晶体从辊接触​​表面沿厚度方向生长。 结果,通过带钢铸造工艺或任何其他快速冷却工艺制成的快速凝固合金具有包括R的结构。 2 铁 14 B晶相和富R相。  R 2 铁 14 B结晶相通常具有约0.1μm至约100μm的短轴尺寸和约5μm至约500μm的长轴尺寸。 另一方面,富含R的相分散在R之间的晶界中,该富含R的相是包括相对较高浓度的稀土元素R的非磁性相。 2 铁 14 B晶相。 \n\n [0006] 与通过传统的铸锭工艺或压铸工艺制成的合金(在本文中将这种合金称为“铸锭合金”)相比,快速凝固的合金在较短的时间内(即在 冷却速度约10 2 °C /秒至约10 4 ℃/秒)。 因此,快速凝固的合金具有较细的组织和较小的平均晶粒尺寸。 另外,在快速凝固的合金中,其晶界具有更大的面积,并且富R相在晶界中广泛而稀疏地分散。 因此,快速凝固的合金在富R相的分散性方面也优异。 因为快速凝固的合金具有上述有利特征,所以可以由快速凝固的合金制成具有优异的磁性能的磁体。 \n\n [0007] 在本领域中还已知一种替代的合金制备方法,称为“ Ca还原过程(或还原-扩散过程)”。 该方法包括将金属钙(Ca)和氯化钙(CaCl)以预定的比例添加到至少一种稀土氧化物,铁粉,纯硼粉以及铁硼硼粉和氧化硼中的至少一种的混合物中的步骤。 或以预定比例包含这些构成元素的合金粉末或混合氧化物的混合物,在惰性气氛中对所得混合物进行还原-扩散处理,稀释所得反应物以制成浆液,然后用水处理浆液 。 以这种方式,可以获得RT-(M)-B型合金的固体。 \n\n [0008] 应当注意,固体合金的任何小块在本文中将被称为“合金块”。  “合金块”可以是各种形式的固体合金中的任何一种,其不仅包括通过缓慢地或快速地冷却材料合金的熔融物而获得的凝固合金(例如,通过常规的铸锭工艺制备的合金铸锭或合金薄片)。 通过淬火工艺(例如带钢铸造工艺)制备的合金,以及通过钙还原工艺获得的固态合金。 \n\n [0009] 通过执行以下步骤来获得待压实的合金粉末,该步骤包括例如通过氢粉碎工艺和/或各种机械研磨工艺(例如,使用羽毛磨机,电 粉碎机或盘式粉碎机),例如使用喷射式粉碎机通过干磨法将所得的粗粉(平均粒径为约10μm至约1000μm)精细粉碎。 待压实的合金粉末优选具有约1.5μm至约7μm的平均粒径,以实现足够的磁性能。 应当注意,除非另有说明,否则本文中粉末的“平均粒径”是指质量中值直径(MMD)。 也可以通过使用球磨机或磨碎机将粗粉细粉碎。 \n\n [0010] 氢粉碎法是利用由于暴露于氢气气氛的合金材料的体积膨胀而在稀土合金材料(通常为合金块)中产生非常小的裂纹的现象的粉碎技术。 该膨胀是由合金材料中包含的稀土元素的氢化引起的。 与机械研磨过程相比,氢粉碎过程在随后的加工和制造步骤中提高了生产率并减少了稀土元素的氧化。 当将快速凝固的合金用作材料合金块时,可以通过氢粉碎工艺将合金块粗粉碎至约1mm或更小的尺寸(通常至约10μm至约1000μm的平均粒径)。  。 另一方面,当材料合金块是通过还原-扩散工艺制备的合金锭或固态合金时,所获得的粗粉将具有约1cm的平均粒径。 \n\n [0011] 在现有技术中,RT-(M)-B型合金的氢粉碎通常通过用稀土材料合金块填充由诸如SUS304之类的不锈钢制成的容器然后对合金块进行处理来进行。 氢炉内部的氢吸收和氢解吸过程。 \n\n [0012] 具体地,首先,将储存在容器中的合金块装载到氢炉中,在氢炉中产生减压气氛。 接下来,将氢气供应到氢气炉中,从而使合金块吸留(或吸收)氢气。 在该氢吸留(或吸收)过程中,合金块中包含的稀土元素被氢化。 合金块的氢化部分扩大了它们的体积,从而在那里产生了裂纹。 随后,在经过预定的时间之后,将氢气从氢气炉中排出,以在炉内产生减压气氛。 同时,炉子也被加热以使合金块的氢化部分解吸氢。 此后,将惰性气体引入炉中,从而冷却所得的粗粉。 在该冷却过程中,为了用惰性气体更有效地冷却粗粉,可以通过设置在氢气炉内部的风扇在氢气炉内部产生气流。 另外,为了提高该冷却过程的效率,本申请的申请人在美国专利No.5,235,038中公开了一种容器(氢粉碎箱)。 优选使用美国专利号6,247,660 B1,其通过引用并入本文。 \n\n [0013] 然而,在常规的氢粉碎过程中,氢炉不能总是保持其内部完全气密的状态。 因此,特别是在氢炉内部具有减压的情况下,空气中的氧气应该容易地流入氢炉。 但是,如果氢炉中存在氧气,则稀土元素会被氧化,从而使所获得的烧结磁体的磁性能变差。 因此,为了最大程度地减少这种有害的氧化,应尽快将气体引入氢炉并从氢炉中排出。 另外,为了提高生产率,需要在尽可能短的时间内通过惰性气流冷却粗粉。 \n\n [0014] 然而,在常规的氢粉碎过程中,如果气体在太短的时间内被引入或排出,或者如果惰性气体以过高的流速被供应到氢炉中,则是为了使不利的氧化和最小化。  /或提高冷却速度(或生产率),则可能将通过氢粉碎过程获得的粗粉吹散并散布在氢炉内。 分散的粉末主要由相对较小的颗粒组成,这些颗粒包含相当高百分比的稀土元素。 因此,如果这些小颗粒被分散,则容器内部的粗粉的总体组成与预期或期望的组成不同。 结果,可能无法实现期望的磁性能。 而且,当氢炉打开并暴露在空气中时,已经吹散,散布并留在氢炉内部各个位置的那些粉末颗粒可能被氧化。 在那种情况下,那些氧化的合金粉末颗粒可以在下一个氢粉碎过程中与下一批的粗粉末混合。 然后,像这样的有缺陷的粗粉可能导致烧结体部分不完全(即,烧结密度降低)。 也就是说,那些小的粉末颗粒在氢粉碎过程中的散布不利地降低了材料的产率。 此外,如果氢炉的一部分由碳制成,则稀土合金材料(即,粗粉)中所含的碳的量可能增加,从而可能使所得烧结磁体的磁性能劣化。 \n\n [0015] 然而,如果以太低的速率引入或排出气体或产生气流,则不会引起小粉末颗粒的散布,那么将花费太多时间来冷却所获得的粗粉,从而降低了通过量。 此外,由于大量空气(或氧气)应进入熔炉,因此最终的磁性能可能会下降,或者在最坏的情况下,材料可能会着火。 \n\n [0016] 其中,通过对快速凝固的合金块进行这样的氢粉碎处理而获得的粉末颗粒相对细且易于氧化,并且它们中的许多是小的粉末颗粒,其易于散布在炉内。 而且,那些细粉颗粒通常在容器内部足够密集地堆积,并且不能通过惰性气体流轻易地通风。 也就是说,那些细粉颗粒不能如此有效地冷却。 因此,为使细粉末颗粒几乎与粗粉末颗粒一样有效地冷却,由于该原因,惰性气体也应以相对较高的流量供给。 因此,由粉末颗粒的无意散布引起的上述问题在通过快速冷却过程获得的合金块的氢粉碎过程中特别显着。 \n\n [0017] 这些问题不仅在稀土合金块的氢粉碎过程中,而且在任何其他氢化过程(例如为制备各向异性粘结磁体的粉末而进行的HDDR过程)中也出现。 \n\n 发明内容 \n\n [0018] 为了克服上述问题,本发明的优选实施方式提供了一种用于使稀土合金进行氢化处理的设备,通过该设备,使稀土元素的有害氧化充分地最小化,并且生产率显着提高,并且还提供了一种方法。 用这种设备生产稀土烧结磁体的方法。 \n\n [0019] 本发明的一个优选实施方案提供了一种用于对稀土合金块进行氢化处理的设备。 该设备优选地包括壳体,进气口,排气口,布置成产生气流的构件以及防风板。 壳体优选地限定用于容纳容器的内部空间。 该容器优选地包括上部开口,并且优选地在其中存储稀土合金块。 氢气和惰性气体优选通过进气口被引入内部空间,并且优选通过排气口从内部空间排出。 优选在内部空间内部产生气流。 防风板优选相对于内部空间内部产生的气流设置在上游,并且优选减小容器的上部开口附近产生的气流的流速。 \n\n [0020] 在本发明的一个优选实施方式中,所述容器优选还包括底表面和侧表面,并且所述防风板优选包括遮蔽部和至少一个开口。 遮蔽部分优选地位于与容器的上部开口的高度相对应的竖直高度处。 至少一个开口优选地与容器的至少一个侧面相对。 \n\n [0021] 在该特定的优选实施例中,容器优选地包括至少一个中空管。 中空管优选地将容器的两个侧表面连接在一起,并且优选地具有与两个侧表面基本连续的内表面。 两个侧面优选与防风板相对。 \n\n [0022] 更具体地,防风板的至少一个开口优选地布置成面对至少一个中空管。 \n\n [0023] 在又一个优选实施例中,该设备可以进一步包括第二防风板。 第二防风板优选包括覆盖容器的上部开口的屏蔽部。 \n\n [0024] 在这种情况下,第二防风板优选具有至少一个开口。 \n\n [0025] 本发明的另一个优选实施方案提供了一种用于对稀土合金块进行加氢处理的设备。 该设备优选地包括壳体,布置成供应气体的构件和防风板。 壳体优选地限定用于容纳容器的内部空间。 该容器优选地包括上部开口,并且优选地在其中存储稀土合金块。 内部空间内的气氛优选地可控制为减压状态。 优选将气体供应到内部空间中。 防风板优选地减小已经在容器的上部开口附近产生的气流的流速。 \n\n [0026] 本发明的又一优选实施方式提供了一种稀土烧结磁体的制造方法。 该方法优选地包括以下步骤:制备容器,该容器包括上部开口并在其中存储稀土合金块;通过使用根据任何一项的装置的氢粉碎工艺,将稀土合金块粉碎成粗粉。 上述本发明的优选实施方案,由粗粉制得细粉,并压实该细粉以获得生压坯并烧结该生压坯。 \n\n [0027] 在本发明的一个优选的实施方式中,稀土合金块优选为稀土合金薄片,其通过对稀土合金的熔体进行淬火处理而获得。 \n\n [0028] 通过以下参考附图对优选实施例的详细描述,本发明的其他特征,要素,特征,步骤和优点将变得更加明显。 \n\n 附图说明 \n\n [0029] 图。 图1是示意地表示氢粉碎机的结构的俯视图。 100  根据本发明的优选实施例。 \n\n [0030] 图。 图2是示意地表示氢粉碎机的结构的侧视图。 100  如图所示。  1。 \n\n [0031] 图。 图3是示意地表示氢粉碎机的结构的主视图。 100  如图所示。  1。 \n\n [0032] 图。 图4是示意性地表示容器的配置的俯视图。 10  在氢气粉碎机中 100 。 \n\n [0033] 图。 图5是示意性地表示容器的配置的侧视图。 10  在氢气粉碎机中 100 。 \n\n [0034] 图。 图6是示意地表示容器的配置的主视图。 10  在氢气粉碎机中 100 。 \n\n [0035] 图。 图7A是示出其中一个容器的透视图。 10  在本发明的各种优选实施方式中,用于在其中存储稀土合金块的材料。 \n\n [0036] 图。 图7B是容器的侧视图 10 ,封面 18  另外,从图1中的箭头A所示的方向观察时,还配置有其他的部件。  7A。 \n\n [0037] 图。 图8是示意地表示防风板的结构的俯视图。 50  提供给氢气粉碎机 100 。 \n\n [0038] 图。 图9是示出用于氢粉碎过程的示例性温度曲线的图。 \n\n 实施本发明的最佳模式 \n\n [0039] 在下文中,将参考附图描述本发明的优选实施例。 在以下具体的优选实施方式中,将本发明描述为应用于稀土合金块的氢粉碎工艺。 然而,本发明决不限于以下描述的说明性实施例。 \n\n [0040] 无花果 1, 2  和 3  氢粉碎机(在本文中也称为“氢气炉”)的俯视图,侧视图和正视图 100  根据本发明的优选实施例。 \n\n [0041] 氢气粉碎机 100  包括一个外壳 30 ,进气口和出气口 32  和 34 , 风扇 40  和防风板 50 。 肠衣 30  定义一个内部空间 20  在多个容器中 10  (例如,参见图7)包括稀土合金块。 通过进气口引入氢气和惰性气体 32  进入内部空间 20  并从内部空间筋疲力尽 20  通过出气口 34 。 风扇 40  用于布置为在内部空间内部产生气流的构件 20 。 防风板 50  相对于内部空间内部产生的气流布置在上游 20 。 防风板 50  设置为减小在上部开口周围产生的气流的流速 10 a  每个容器的 10 。 如本文所用,“气体流”是指内部空间内部存在的大气气体的流。 20 。 气体流是指任何气体的动态流,无论该气体是什么类型或该气体具有什么成分。 应当注意,气流的“强度”在本文中由气流的流速或压力表示。 \n\n [0042] 如后面将参考图2详细描述的那样。  8,防风板 50  包括屏蔽部分 50 b  在与上开口对应的垂直高度 10 a  其中一个容器 10  储存在内部空间中 20 。 防风板 50  还包括至少一个开口 50 a  与侧面相对 12  容器的 10 。 因此,防风板 50  降低上部开口周围产生的气流的流速 10 a  容器的 10  但增加了在侧面周围产生的气流的流量 12  容器的 10 。 相应地,可以防止粉末存储在容器中 10  不会被上部开口周围产生的气流吹走 10 a  其。 \n\n [0043] 氢气粉碎机的结构 100  将参考图1至图4进一步详细描述。  1, 2  和 3 。 \n\n [0044] 如图所示。  1和2,氢气粉碎机 100  最好包括外壳 30  和一个盖子 36 ,可以打开和关闭以装载和卸载容器 10  进入/离开内部空间 20  外壳的 30  通过一个开口 30 a  外壳的 30 。 内部空间 20  接收容器 10  可以在套管中心周围定义 30  作为将温度,大气压的压力和气流的流量控制在预定范围内的区域。 肠衣 30  和盖子 36  优选地,它们由诸如SUS304L,SUS316或SUS316L的不锈钢制成,以减小对氢的脆性。 另外,外壳 30  优选具有约3.0 m的内部体积 3  至约5.2 m 3 。 \n\n [0045] 机壳内 30 , 一个管子 22  和前后盖 24 a  和 24 b  提供。 管子 22  可以由隔热材料(例如碳)制成,并具有前后开口 22 a  和 22 b 。 前开口 22 a  位于前盖后面 24 a ,而后方开口 22 b  在后盖后面 24 b 。 前后盖 24 a  和 24 b  最好由与管子相同的绝热材料制成 22 ,并且通过打开/关闭气缸来打开和关闭 25 a  和 25 b , 分别。 在图 1,前后盖 24 a  和 24 b  图示为在单点链(中心线)上关闭,在单点链下打开。 \n\n [0046] 当管 22  以及前后盖 24 a  和 24 b  被关闭,管 22  以及前后开口 22 a  和 22 b  形成一个密封的空间,其中有一个加热器 26  提供加热内部空间 20 。 如图1所示。  3,这个加热器 26  围绕管的整个内圆周布置 22  加热内部空间 20  几乎统一。 加热器 26  可以由具有足够耐氢气性的碳石墨制成。 同样如图2所示,  3,上下热电偶 28 a  和 28 b  提供监视内部空间的温度 20 。 通过调节电极提供的电量 26 a  到加热器 26  响应热电偶的输出 28 a  和 28 b ,内部空间的温度 20  是可控的。 应该注意的是电极 26 a  还用作支撑加热器的构件 26  在其上。 \n\n [0047] 容器 10 ,包括稀土合金块,被安装在机架上 15  (例如,参见图4),然后将其加载到内部空间中 20 。 氢气粉碎机 100  包括底部导辊 62  用于支撑机架的底部 15  并滚动机架 15  如图2所示,在其上。 2 ,还包括侧导板 64  如图 1.使用这些滚筒 62  和指南 64 , 机架 15  可以被引导到内部空间内的预定位置 20 。 也就是说,“内部空间” 20  是加热器包围的空间 26  并定义为存放机架 15  如上所述。 可选地,多个机架 15  可以装到这个氢气粉碎机中 100  并同时进行氢气粉碎过程。 容器数 10  可以安装在每个机架上 15  以及每个机架的尺寸 15  考虑到要实现的工作效率可以适当地改变。 在该优选实施例中,四层三个容器 10  最好安装在三个机架的每个机架上 15  然后是三个架子 15  被装载到内部空间 20  如图1和2所示一个接一个。  4, 5  和 6 。 也就是说,在36个容器中存储了许多稀土合金块 10  总而言之,同时进行氢粉碎过程。 \n\n [0048] 通过进气口 32  外壳的 30 ,将氢气和惰性气体(例如Ar或He气体)供应到外壳中 30 。 进气口 32  连接到冷却器(未显示),该冷却器控制供应到外壳中的气体的温度 30 。 例如,通过操作阀(未示出)将引入的气体从氢粉碎过程的一个阶段改变为另一阶段。 另一方面,出气口 34  连接到诸如罗茨泵或液压泵的排气单元(未示出),以便从壳体中排出气体 30  通过出气口 34 。 例如,这些气体引入和排出构件可以如日本特开2000-303107号公报(对应于美国专利第6,403,024号,其通过引用并入本文)中所公开的那样布置。 氢气粉碎机 100  根据该优选实施例,优选地是批处理类型。 但是,通过提供一种用于连续处理类型的设备(例如,ULVAC Corporation生产的连续真空炉FS系列)的防风板,也可以实现本发明的效果。 \n\n [0049] 如本文所用,“惰性气体”可以非常小的百分比包括反应性气体(例如,氧气和/或氮气)。 然而,包含在“惰性气体”中的氧气和氮气的百分比分别优选地不大于大约5摩尔%并且不大于大约20摩尔%,并且更优选地为大约1摩尔%以下并且 分别为约4mol%或更少。 \n\n [0050] 套管内部产生的大气气体的类型和压力 30  通过调节要输入到壳体和从壳体中排出的气体的流速,可以根据预定义程序进行控制 30 。 另外,氢气粉碎机内部产生的大气温度 100  可通过操作加热器来控制 26  根据预设的温度曲线,同时监视设置在炉内的温度传感器的输出。 大气的流量由风扇控制 40  并且可以通过冷却器(冷却管)降低大气温度 42  置于风扇之间 40  和内部空间 20 。 此外,惰性气体的温度也可以由连接到气体入口的冷却器(未示出)控制。 32 。 这样的温度控制可以由控制器(未示出)执行。 \n\n [0051] 通过转动风扇 40 产生气流,如图2中线下方的箭头所示。  1.这是因为已通过进气口引入的气体 32  (见图2)插入外壳之间的间隙 30  和管 22  管道受管限制 22 ,前后盖 24 a  和 24 b  和通道限制壁 44 a  和 44 b.  \n\n [0052] 盖子 36  氢气粉碎机的 100  至少在氢粉碎过程中关闭,从而保持壳体内的空间 30  在氢气粉碎过程中完全密封。 当容器 10  (即,机架 15 )正在从这台氢气粉碎机中装载或卸载 100 , 盖子 36  氢气粉碎机的 100  通过驱动机构(未示出)将其抬起,从而露出开口 30 a  氢气粉碎机的 100 。 图。 图1示出了盖的状态 36  已经关了。 自肠衣 30  和盖子 36  具有足够高的机械强度以抵抗炉内的升高和降低状态的机械强度,可以在该氢气粉碎机内安全地进行各种类型的加氢过程 100 。 \n\n [0053] 在该优选实施例中,许多容器 10 分别安装在机架上的大约300mm×150mm×500mm尺寸 15 ,然后将其装入内部空间 20  如图所示。  4, 5  和 6 。 无花果 4, 5  和 6  图2是分别示意性地示出容器的布置的俯视图,侧视图和正视图。 10  储存在内部空间中的 20 。 这些容器 10  已经安装在机架上 15  在水平和垂直方向上彼此隔开,以使气体易于在相邻容器之间流动 10 。 \n\n [0054] 容器 10  和架子 15  它们优选由不锈钢制成,例如SUS304L,其表现出对氢的期望的低脆性。 容器 10  稀土合金块通常是箱形的,并且优选相对较浅(例如,具有约10cm或更小的深度)以均匀地氢化稀土合金块。 另外,即使容器 10  如果是相对较深的盒子,最好将合金块包装到容器中 10  从其表面测量的深度约为10厘米。 这样做是为了使合金块的最大可能表面积(最好是整个区域)均匀地暴露于氢气氛中。 原因是如果容器较浅 10  合金块充满了很多合金块,那么可能很难对这些合金块进行均匀的氢粉碎过程。 每个机架 15  用于支撑容器 10  其上优选地具有足够的机械强度,并且优选地暴露容器的相应侧面。 10 尽可能地扩大容器底部或侧面的面积 10  其中热量直接与大气交换。 \n\n [0055] 容器 10  用于存放稀土合金块的材料最好如图1所示。 在图7A中公开并在美国专利No. 美国专利号6,247,660 B1,其通过引用并入本文。 \n\n [0056] 身体 11  容器的 10  优选地是具有长形的上开口的基本上长方体的盒子(例如,具有大约500mm×185mm×85mm的尺寸) 10 a  以提高批量生产能力。 如图1所示。  7A,隔断 15  设置在身体的大致中心 11 。 为了增加热传递和散热效果,三个空心管 14 具有约12mm的外径和约9mm的内径的U形件被附接到较短的侧表面 12  容器主体的 11  在其中间垂直高度附近。 具体地,如图1所示,  7A,这三个管道 14  延伸通过分区 15  沿容器主体的长度 11 和它们的空心末端 14 a  分别装有开口 12 b  较短的侧面 12  容器的 10 。 此外,还有六个中空管 14 具有约10mm的外径和约8mm的内径的U形管被附接到较长的侧表面 12  容器主体的 11  以便延伸到三个空心管 14  在较短的侧面之间 12 。 具体地,如图1所示,  7A,这六个管道 14  有空心的末端 14 a  配有相应的开口 12 b  较长的侧面 12  容器的 10 。 也就是说,在图1所示的优选实施例中,该实施例包括: 如图7A所示,这九个空心管中的每一个 14  有一个内表面 14 a ,与相关的侧面基本连续 12 。 应当注意,空心管的空心端和内表面在此用相同的附图标记表示。 14 a 。 而且,在图1所示的优选实施例中,  7A,空心端 14 a  空心管的 14  基本上与开口齐平 12 b  侧面的 12  容器的 10 。 另外,两端 14 a  空心管的 14  可能会从侧面突出 12  容器的 10 。 无论如何,空气应该能够进入空心管 14  通过空心的末端 14 a 。 应该注意的是侧面 12  容器的 10 基本上垂直于内部空间中产生气流的方向延伸 20  流动(即较长的侧面 12  在图1所示的优选实施例中,  7),显着促进热传递和散热。 因此,空心管 14  至少应在这些较长的侧面之间 12  但不必在另一个较短的侧面之间 12 。 \n\n [0057] 另外,增加容器的机械强度 10 ,侧面的上边缘 12  容器主体的 11  最好设有一个加强片 13  例如,优选地由铜制成。 此外,容器主体的底部 11  最好用加固的下部框架包围 17 。 容器主体 11 ,空心管 14 , 划分 15  和加强下框架 17  还优选由不锈钢制成,例如SUS304L,其表现出期望的对氢的低脆性。 为了获得更高的热导率,这些部件优选地由具有约2.35W / cm·deg或更高的热导率的材料(例如,铜或铝合金)制成。 \n\n [0058] 这样的容器 10  安装在机架上 15  如图所示。  4, 5 和 6 。 从这些图中可以看出,这些容器 10  排列成较长的侧面 12  与正面相对,即较长的侧面 12  基本上垂直于内部空间中产生的气流的方向延伸 20  如图3中的箭头所示流动。  5, \n\n [0059] 防风板 50  放在机架前面 15  最接近开口 30 a 。 穿过防风板的气体 50 ,在容器周围流动 10  已经安装在机架上 15 。 \n\n [0060] 以下,防风板之间的位置关系 50  和容器 10  储存在内部空间中 20  将参考图2进行描述。  8。 \n\n [0061] 如图1所示。  8,防风板 50  包括开口 50 a  和屏蔽部分 50 b  (即防风板的其余部分 50  除了开口 50 a )。 在容器周围产生气流 10  堆叠在架子上的多层(在本实施例中为四层) 15 ,开口 50 a  在与那些层相对应的相应垂直高度处提供“ A”。 而且,如图2所示,  8,多个开口 50 a  优选地,为每个水平设置,使得侧面 12  的容器 10  每一层中的气体尽可能均匀地暴露于气流中。 \n\n [0062] 另外,为了减小在上部开口周围产生的气流的流量 10 a  每个容器的 10 ,防风板 50  最好设置成使其开口 50 a  不要面对上开口 10 a  的容器 10 。 更具体地说,防风板 50  布置成每个开口的上端 50 a  位于大致等于或低于上开口的垂直高度的位置 10 a  相关容器的 10  而且每个开口的下端 50 a  位于垂直高度,基本上等于或高于其相关容器底部的高度 10 。 \n\n [0063] 通常,防风板 50  布置成每个开口 50 a  其面向侧面的垂直中心 12  相关容器的 10 。 如果容器 10  包括空心管 14  在其侧面之间延伸 12  与防风板相对的 50 ,然后是空心端 14 a  每个空心管的 14  优选地位于其相关开口的上端和下端之间 50 a 。 就是说,如图2所示。  8,空心端 14 a  每个空心管的 14  容器的 10  优选地位于垂直宽度W内 1  由其相关开口的上下两端定义 50 a 。 另外,当空心端 14 a  每个空心管的 14  位于侧面的中间垂直高度 12  容器的 10 ,此宽度W 1  优选为垂直宽度V的大约三分之一或更小 1  侧面的 12 ,更优选垂直宽度V的大约四分之一或更小 1 。 通常,每个开口的上端之间的垂直高度差 50 a  和上部的开口 10 a  相关容器的 10  优选地大约等于或小于垂直宽度W 1  开场 50 a 。 如果该高度差太小,则在开口周围产生的气流 10 a  流速会过高。 然后,合金粉末颗粒从容器中意外散落 10 可能没有得到足够的预防。 \n\n [0064] 另一方面,水平宽度W 2  每个开口 50 a  不必足够大以包含所有与之相关的空心端 14 a 。 也就是说,有些空心的末端 14 a  可能不会面对任何开口 50 a 。 而是宽度W 2  需要定义,以便可以将气流提供给与其关联的容器 10  基本上均匀并且足够的气体流量可以流经其相关的中空管 14 。 \n\n [0065] 如上所述,氢粉碎机 100  优选实施例的结构包括防风板 50  具有屏蔽部分 50 b  位于与上开口对应的垂直高度的位置 10 a  的容器 10  在其中存储稀土合金块。 因此,当在内部空间中产生气流时 20 ,气流在上部开口附近的流速将降低 10 a  的容器 10 。 因此,可以防止或至少减少通过氢粉碎过程获得的合金粉末颗粒的吹散。 结果,合金粉末储存在容器中 10  其整体组成不会有太大变化,从而提高了材料的收率。 当所得的烧结体(或稀土烧结磁体)的稀土元素含量控制在约29.5质量%至约32.0质量%(更特别是约31.0质量%以下)时,该效果特别显着。 \n\n [0066] 此外,即使将气体供应到内部空间中 20  在增加的流速(或速度)下,仍可以缩短处理时间(即,交换气体和/或冷却粉末所花费的时间),并且可以提高产量。 这是因为在上部开口附近产生的气流的流量 10 a  每个容器的 10 根据该优选实施例,可以减小现有技术中足够高的水平以吹散粉末。 此外,散布并留在壳体内部各个位置的合金粉末颗粒的数量要少得多 30 。 因此,即使内部空间 20  外壳的 30  如果将其暴露在空气中,并且这些粉末颗粒被氧化,则着火的风险会大大降低,并且可以更安全地进行氢气粉碎过程。 \n\n [0067] 在氢气粉碎机中 100  根据上述优选实施例,加热器 26  设置在进气口和排气口之间 32  和 34  位于内部空间下方和上方的空间 20 分别如图1所示。  2.因此,在内部空间中垂直产生的气流 20  被加热器削弱 26 ,而仅沿加热器的长度会产生强气流 26  (即在内部空间的水平方向 20 )。 因此,为了减弱这种强烈的气流,防风板 50  只能放在容器前面 10  (即,使其与侧面相对 12  的容器 10 )。 \n\n [0068] 但是,当内部空间内也垂直产生强气流时 20  (例如,没有加热器时 26 ),最好在上部开口上方进一步设置另一个防风板 10 a  容器的 10 。 例如,如图2所示, 在图7B中,盖(即防风板) 18  可以设置为与上开口重叠 10 a  容器的 10  并防止粉末颗粒被强烈的垂直气流吹走。 为了提高气流产生的热交换效率,盖板 18  最好包括孔 19 。 还有差距 19 a  最好在盖之间定义 18  和侧面的顶部 12  容器主体的 11 。 取决于内部空间内部产生的气流的方向 20 ,防风板 50  可从氢气粉碎机中省去 100  和封面 18  可以用作唯一的防风板。 \n\n 烧结磁铁的制造方法 \n\n [0069] 在下文中,根据本发明优选实施方式的烧结磁体的制造方法,包括通过使用氢粉碎机进行的氢粉碎工艺。 100  将描述上面描述的。 在下面的特定优选实施例中,通过快速冷却工艺获得的合金块(或薄片)用作烧结磁体的材料合金。 这是因为上述根据本发明的优选实施方式的氢粉碎机特别有效地适用于对这种快速凝固的合金进行氢粉碎处理。 \n\n [0070] 首先,通过已知的薄带连铸法制备具有期望组成的用于RT-(M)-B型磁体的材料合金,然后将其存储在预定的容器中。 通过带铸工艺制备的这种材料合金的厚度优选地为约0.03mm至约10mm。 该带铸合金优选包含R 2 Ť 14 具有短轴尺寸为约0.1μm至约100μm和长轴尺寸为约5μm至约500μm且富R相的B晶粒,其分散在R之间的晶界中 2 Ť 14 B晶粒。 富R相的厚度优选为约10μm或更小。 在进行氢粉碎处理之前,优选将原料合金粗粉碎成平均粒径为约1mm至约10mm的薄片。 在美国专利No.5,426,641中公开了一种通过带式铸造工艺制造材料合金的方法。 例如美国专利号5,383,978,其通过引用并入本文。 与通过锭铸造法制备的合金锭相比,通过这样的快速冷却法制备的合金薄片通过氢粉碎法被粉碎成更细的颗粒。 因此,根据上述本发明的优选实施方式的防风板特别有效地应用于这种合金薄片。 \n\n [0071] 接下来,将粗粉碎的材料合金薄片装入容器中 10 ,然后将其安装到机架上 15 。 此后,通过使用物料运输机,例如货架 15  在其上的容器 10  已安装的运输到氢粉碎机的前面 100  然后装入氢气粉碎机 100 。 \n\n [0072] 随后,盖子 36  氢气粉碎机的 100  关闭以开始氢粉碎过程。 氢粉碎处理可以根据图2所示的温度曲线进行。 以图9为例。 在图1所示的优选实施例的具体示例中, 参照图9,首先,进行约0.5小时的真空泵工艺步骤I,其中在氢气粉碎机中产生约1Pa至约10Pa的真空。 100 。 接下来,进行吸氢工序II约2.5小时。 在吸氢工序II中,向壳体内供给氢气。 30  在内部空间创造氢气氛 20 。 在该工艺步骤中,氢气的压力优选为约200Pa至约400kPa。 由于合金薄片中夹杂着氢,因此内部空间的温度 20  一旦增加到约300°C \n\n [0073] 随后,在约0Pa至约3Pa的减压下进行脱氢工艺步骤III约5.0小时。 该脱氢工艺步骤III是在试管中进行的 22  用前后盖密封 24 a  和 24 b  和内部空间 20  由加热器加热至约550℃ 26 。 此后,在将氩气供应到壳体中的情况下,对所得粗粉进行约5.0小时的冷却处理步骤IV。 30 。 \n\n [0074] 在冷却步骤IV中,当内部空间中的大气温度 20  仍然相对较高(例如,超过100℃),将室温下的氩气供应到壳体中 30 ,从而冷却粗粉。 在此冷却过程中,前后盖 24 a  和 24 b  打开,以便可以将氩气供应到内部空间 20  管内 22 。 此后,当粗粉的温度达到相对较低的水平(例如,约100℃以下)时,已被冷却至比室温低的温度(例如,比室温低约10℃)的氩气。  (°C。) 30  考虑到冷却效率。 可以以约10Nm的流速供应氩气。 3 /分钟。 到约100 Nm 3 /分钟。 \n\n [0075] 一旦粗粉的温度降低到大约20℃到大约25℃,优选地将大约在室温下(其低于室温不超过5℃)的氩气供应到容器中。 内部空间 20  将粗粉冷却至室温左右。 这样,外壳内不会产生冷凝水 30  当盖子 36  氢气粉碎机的 100  打开。 机壳内的冷凝水 30  应该被淘汰。 原因是如果机壳内有水 30  由于凝结,水在真空泵工艺步骤I中会冻结或蒸发,从而花费太多时间来完成真空泵工艺步骤I。 \n\n [0076] 氢气粉碎过程完成后,容器 10  (或机架 15 )最好从氢气粉碎机中卸出 100  例如,通过本申请的申请人在日本特开2000-303107号公报中所描述的方法进行处理。 \n\n [0077] 在氢气粉碎机中 100  根据上述本发明的优选实施方式,防风板 50  相对于内部空间内部产生的气流位于上游 20  容器在哪里 10  包括稀土合金薄片。 也就是说,防风板 50  放在机架前面 15 。 因此,当气体被引入内部空间或从内部空间排出时产生的气流将不会吹散或散布粉末颗粒。 20  或当向内部空间供应惰性气体时 20  冷却粗粉。 例如,当每个容器 10  如果装满约20公斤至约25公斤的合金薄片,粉状颗粒将被吹散并散开,从而损失约20克至约30克的防风板 50 。 相反,通过使用氢气粉碎机 100  包括防风板 50 ,粉末的损失量可以减少到仅约2g至约3g。 在不使用防风板的情况下,将吹散和损失的粉末量减少到大约2 g至大约3 g 50 ,内部空间内部产生的气流 20  应该被削弱。 然后,吞吐量应该降低,这是不利的。 而且,本发明人测量了烧结体中的碳含量,所述烧结体中的碳含量是通过烧结在有和没有挡风板的情况下制备的粗粉而获得的。 10 , 分别。 结果,当防风板 50  如果未提供,则烧结体的平均碳浓度为约470ppm。 另一方面,当防风板 50  如果提供,则烧结体的平均碳浓度降低至约450ppm。 \n\n [0078] 此后,已经冷却至大约室温的粗粉例如使用喷射磨机进一步研磨,从而制成材料的细粉。 接下来,将粘合剂(或润滑剂)与该细粉混合,然后使用压实机将混合物压制成所需的形状。 以这种方式,获得了压坯。 然后,对生压坯进行一系列的制造和处理步骤,包括去除粘合剂,烧结,冷却和时效处理,从而生产稀土合金烧结磁体。 \n\n [0079] 本发明人通过实验发现并证实了当氢粉碎机 100  使用根据本发明优选实施方案的方法,不仅可以减少由于分散的氧化粉末颗粒的不希望的混合物而导致不完全烧结的部分,而且可以降低烧结体的碳浓度。 \n\n [0080] 已经描述了本发明的各种优选实施例被应用于带钢铸造合金。 然而,本发明不限于此。 可替代地,本发明可有效地用于粉碎已经通过离心铸造工艺快速冷却和固化的合金,例如,如日本特开平9-31609号公报中所公开的。 \n\n [0081] 在上述优选实施例中,防风板 50  是板状的成员。 然而,防风板仅需减小气流的流速,并且还可以具有格子或网状的形状,作为多个条的组合。 另外,在上述优选实施方式中,防风板 50  为机架提供 15 。 或者,防风板 50  也可以形成容器侧面的组成部分 10 。 此外,在上述优选实施例中,容器 10  安装在机架上 15  然后装进内部空间 20  氢气粉碎机的 100 。 可选地,容器 10  也可以直接装进内部空间 20 。 在那种情况下,那些容器 10  优选地,例如使用间隔器在水平方向和垂直方向上彼此间隔开,以允许气体容易地在相邻的容器之间流动。 10 。 还应注意,尽管根据上述优选实施方式的氢粉碎机使用具有底面和侧面的盒子作为容器。 10 在本发明中也可以使用杯形容器,其底表面和侧表面结合在一起。 \n\n 工业适用性 \n\n [0082] 本发明的各种优选实施方式提供了一种用于使稀土合金经受氢化工艺的设备,通过该氢化工艺,充分地减少了稀土元素的不希望的氧化并且极大地提高了生产率,并且还提供了一种用于制造稀土烧结磁体的方法。 随着生产力的提高。 \n\n [0083] 根据本发明的各种优选实施方式的氢化装置可以有效地用于在稀土烧结磁体的制造过程中通过氢粉碎技术来粉碎稀土合金块,从而提高了材料的产率和产量。 该设备特别有效地适用于通过快速冷却工艺制备的稀土合金块的氢粉碎工艺。 \n\n [0084] 应当理解,以上描述仅是对本发明的说明。 在不脱离本发明的情况下,本领域技术人员可以设计出各种替代和修改。 因此,本发明旨在涵盖落入所附权利要求书范围内的所有这样的替代,修改和变化。');
INSERT INTO `os_patent_instruction_text` VALUES (12935, 22764, 'TECHNICAL FIELD\n\n[0001]The present invention relates to a method for producing rare earth sintered magnets.\n\nBACKGROUND ART\n\n[0002]Rare earth sintered magnets currently used extensively in various fields of applications include a samarium-cobalt (Sm—Co) type magnet and a neodymium-iron-boron type magnet (which will be herein referred to as an “R-T-(M)-B type magnet”). Among other things, the R-T-(M)-B type magnet (where R is at least one of the rare earth elements including yttrium (Y) and is typically neodymium (Nd), T is either Fe alone or a mixture of Fe, Co and/or Ni, M is at least one additive selected from the group consisting of Al, Ti, Cu, V, Cr, Ni, Ga, Zr, Nb, Mo, In, Sn, Hf, Ta and W, and B is either boron alone or a mixture of boron and carbon), is used more and more often in various types of electronic appliances. This is because the R-T-(M)-B type magnet exhibits a maximum energy product (BH)max that is higher than any of various other types of magnets, and yet is relatively inexpensive.\n\n[0003]A rare earth sintered magnet is produced by pulverizing a rare earth alloy into an alloy powder, pressing and compacting the alloy powder under a magnetic field to obtain a green compact (as-pressed compact) and then sintering the green compact in a sintering furnace. If the rare earth element such as neodymium to be included in the R-T-(M)-B type magnet is oxidized during the sintering process, the resultant magnetic properties deteriorate significantly. Thus, to avoid the disadvantageous oxidation, the atmosphere inside the sintering furnace is normally a vacuum or a reduced-pressure inert atmosphere of Ar, He, or any other inert gas. In sintering multiple green compacts, those green compacts are loaded into a hermetically sealable sintering case (which is also called a “sintering pack”) and then the sintering case, including those green compacts, is heated in its entirety to increase the productivity. Also, when a great number of green compacts are to be sintered simultaneously, a sintering case, equipped with a number of sintering base plates piled up like shelves, is used. In that case, the as-pressed green compacts are arranged on the sintering base plates and then those plates are stored like shelves inside the sintering case.\n\n[0004]For example, green compacts 95 to be processed into sintered magnets for a motor are sintered after having been arranged inside a sintering case 9 as shown in FIGS. 3A and 3B.\n\n[0005]In the example illustrated in FIGS. 3A and 3B, the sintering case 9 includes a bottom container 90 and a cover 92 to be fitted with the bottom container 90. The bottom container 90 includes a bottom plate 90a and a sidewall 90b. Inside the bottom container 90, a number of sintering base plates 94 are vertically piled up with a predetermined gap provided between them by spacers 96. The sintering case 9 is heated up to an elevated temperature of about 1,000° C. or more, for example, during the sintering process. Accordingly, the bottom container 90 and the cover 92 are both made of a material with high thermal resistance (e.g., molybdenum or SUS310).\n\n[0006]The sidewall 90b of the bottom container 90 surrounds the periphery of the sintering base plates 94 and supports the cover 92 thereon at the upper edge thereof. The space surrounded with the sidewall 90b (i.e., storage space) has a horizontal dimension (i.e., a width) that is slightly greater than the width of the sintering base plates 94. The difference may be on the order of several millimeters to several centimeters. In any case, this sintering case 9 is designed so as to have a narrow gap between the sintering base plates 94 and the sidewall 90b. This narrow gap is adopted to store the greatest possible number of green compacts 95 inside the sintering case 9 simultaneously as efficiently as possible. This is because the narrower the gap, the greater the width of the sintering base plates 94 can be. In addition, when the gap between the sintering base plates 94 and the sidewall 90b is small, even if the sintering case 9 is vibrated during its transportation, for example, the sintering base plates 94 cannot move inside the sintering case 9 so much as to collapse the spacers 96 on the sintering base plates 94 unintentionally.\n\n[0007]As shown in FIGS. 4A through 4C, each of the green compacts 95 has curved surfaces including a concave surface 95a and a convex surface 95b. When the green compact 95 shown in FIG. 4A is viewed along a plane that crosses the concave and convex surfaces 95a and 95b at right angles, the cross section of the compact 95 has a shape including two arcs. For example, the concave and convex surfaces 95a and 95b may constitute respective portions of two cylindrical surfaces having mutually different radii of curvature. In that case, the outer radius defined by the convex surface 95b may be greater than the inner radius defined by the concave surface 95a. A green compact having such a shape is called a “curved green compact” or an “arched green compact”. As shown in FIG. 4A, this green compact 95 includes two curved surfaces (i.e., the concave and convex surfaces 95a and 95b, which will be herein also referred to as “principal surfaces”) that are opposed to each other; two side surfaces 95d that are opposed to each other with the two curved surfaces 95a and 95b interposed between them; and two end surfaces 95c that cross both the curved surfaces 95a and 95b and the side surfaces 95d substantially at right angles. The principal surfaces 95a and 95b are greater in area than any of the other surfaces of the green compact 95. Typically, the end surfaces (or bottoms) 95c are smaller in area than any other surface of the green compact 95.\n\n[0008]The green compacts 95 of such a shape are mounted on each of the sintering base plates 94 so as not to contact with each other, e.g., so that the horizontal edges of the concave surface 95a or the center of the convex surface 95b is in contact with the sintering base plate 94 as shown in FIGS. 4B and 4C. These arrangements are used to prevent the green compacts 95 from turning over in the manufacturing and processing step of mounting the green compacts 95 on the sintering base plate 94 or loading the sintering base plate 94 into the case 9, for example. For that purpose, the green compacts 95 are arranged to have their center of mass located at the lowest possible level (i.e., so that their top is located at the lowest possible level) when mounted on the sintering base plate 94. To increase the degree of orientation, the green compacts 95 (e.g., green compacts to be processed into R-T-(M)-B type magnets, in particular) have a green density that is lower than that of green compacts to be processed into ferrite magnets. The green compacts 95 to be processed into R-T-(M)-B magnets may have a green density of about 3.9 g/cm3 to about 5.0 g/cm3, for example. Accordingly, these green compacts 95 are very brittle and easily crack or chip on impact with something hard (e.g., the instant they fall or are dropped). Thus, these green compacts 95 should be arranged so as not to turn over so easily. It should be noted that the green compacts 95 arranged on the same sintering base plate 94 may have been either subjected to the compaction process individually or obtained by cutting and dividing a single green compact into multiple smaller bodies.\n\n[0009]Furthermore, if the green compacts 95 that have been mounted directly on the sintering base plate 94 are sintered, then the resultant sintered bodies 95 and the sintering base plate 94 may sometimes be partially fused together unintentionally. This is because the rare earth element such as Nd included in the R-T-(M)-B type alloy powder and a metal element included in the sintering base plate 94 may cause a eutectic reaction at a temperature that is equal to or lower than the sintering temperature. If the base plate 94 and the sintered bodies 95 are partially fused together, the size of the green compacts 95 being sintered does not decrease smoothly with the sintering process, thus possibly cracking or chipping the resultant sintered bodies 95. Also, even if the base plate 94 and the sintered bodies 95 are not fused together, non-uniform friction may be created between the base plate 94 and the sintered bodies 95, thus also possibly cracking the sintered bodies 95 on their surface that is in contact with the sintering base plate94.\n\n[0010]Thus, to prevent the sintering base plate 94 and the sintered bodies 95 from being fused together, the surface of the sintering base plate 94 is coated with a bedding powder (not shown) according to a known technique so that the green compacts 95 can be sintered on the bedding powder (see, for example, Japanese Laid-Open Publication No. 4-154903). The bedding powder needs to be a powder of a material that exhibits low reactivity with the green compacts 95 and high chemical stability at an elevated temperature. When the green compacts 95 include a rare earth metal, the bedding powder may be a powder of a material exhibiting low reactivity with the rare earth metal, e.g., a powder of a rare earth oxide such as neodymium oxide or yttrium oxide. By using such a bedding powder, the sintering base plate 94 and the sintered bodies 95 are not fused together, and therefore, portions of the sintered bodies 95 that are in contact with the base plate 94 are neither damaged (e.g., cracked) nor deformed.\n\n[0011]However, if multiple green compacts 95 are arranged inside the sintering case 9 as shown in FIGS. 3A and 3B, then the number of green compacts 95 that can be stored inside the sintering case 9 at the same time is relatively small, and the sintering process cannot be performed so efficiently. Specifically, when the flat-plate green compacts 95 are mounted so as to have their center of mass located at the lowest possible level, the projection area of each of those green compacts 95 on the base plate 94 is rather great, thus decreasing the number of green compacts 95 that can be arranged within a limited area. As used herein, the “projection area” of each green compact 95 means the area that is covered by the green compact 95 on the base plate 94.\n\n[0012]Also, if the green compacts 95 are mounted as shown in FIG. 4B or 4C, each of these green compacts 95 is in contact with the base plate 94 in just a narrow area. Then, as the sintering process advances, the (frictional) stress that is created due to the shrinkage of the green compact 95 will be concentrated on the contact portions. In that case, even if the bedding powder is used as described above, the sintered body 95 is still damaged or deformed often by the frictional stress that is created.\n\n[0013]Furthermore, when the green compact 95 is mounted as shown in FIG. 4C, portions located around the center of the convex surface 95b of the compact 95 are damaged or deformed. Thus, it is impossible to remove only the damaged or deformed portion of the sintered body 95 and use the remaining portion thereof. On the other hand, when the green compact 95 is mounted as shown in FIG. 4B, the concave surface 95a of the compact 95 has its horizontal edges deformed. This concave surface 95a has a shape that should not be deformed to fit the resultant sintered magnet on the rotor shaft of a motor. Accordingly, it is also difficult to remove only the deformed portions therefrom and process the remaining portion into a predetermined shape for a sintered magnet. That is to say, if any of the sintered bodies that have been mounted as shown in FIG. 4B or 4C becomes defective, then the defective sintered body cannot be used anymore, thus decreasing the yield of sintered magnets significantly.\n\n[0014]On the other hand, Japanese Laid-Open Publication No. 61-125114 discloses a technique of reducing the number of defective (e.g., warped or deformed) sintered bodies in making relatively thin rare earth sintered magnets. According to the technique disclosed in Japanese Laid-Open Publication No. 61-125114, a green compact having a small thickness is sandwiched between a pair of thicker green compacts that is made of the same material, and has the same shape, as the former green compact. Also, according to the technique, a powder of a material that does not react with the green compacts easily is interposed between these green compacts and/or between the green compact and the base plate when needed.\n\n[0015]In the method disclosed in Japanese Laid-Open Publication No. 61-125114, however, not only the thin green compact but also two other thicker green compacts should be prepared to obtain a single sintered body of the desired small thickness, thus decreasing the yield of the rare earth alloy powder material. Also, according to such a technique, it is difficult to increase the number of green compacts 95 that can be loaded into the sintering case 9 at the same time. Furthermore, in sintering the green compacts 95 having a shape such as that shown in FIG. 4A, it is difficult to sufficiently reduce the damage or deformation of the resultant sintered bodies 95 due to the frictional stress created by the shrinkage of the green compacts 95 being sintered. It is rather understandable that the frictional stress, which is created between the lowest one of the green compacts stacked and the base plate, would be increased to further damage or deform the resultant sintered body, because the total mass of the vertically stacked green compacts is applied to the lowest green compact that is in contact with the base plate.\n\n[0016]As described above, the green compact of a rare earth alloy powder has a great specific gravity (e.g., a green compact of an R-T-(M)-B type alloy powder has a specific gravity of about 3.9 g/cm3 or more) and is very brittle. Accordingly, when a frictional stress is created due to the shrinkage of the green compact being sintered (which loses as much as about 40% or more of its volume), the sintered body is easily damaged or deformed. Particularly when a green compact is mounted so as to have its center of mass located at a low level and to have a small area of contact with the base plate as shown in FIG. 4B or 4C, the resultant sintered body is damaged or deformed very easily. In addition, it is also difficult to store such green compacts efficiently inside a sintering case.\n\nDISCLOSURE OF INVENTION\n\n[0017]In order to overcome the problems described above, preferred embodiments of the present invention provide a method for producing rare earth sintered magnets that minimizes the number of damaged or deformed sintered bodies and greatly increases productivity.\n\n[0018]A preferred embodiment of the present invention provides a method for producing rare earth sintered magnets. The method preferably includes the steps of pressing and compacting an alloy powder for the rare earth sintered magnets, thereby preparing a plurality of green compacts, arranging the green compacts on a receiving plane in a direction in which a projection area of each of the green compacts onto the receiving plane is not maximized, and heating the green compacts, thereby sintering the green compacts and obtaining a plurality of sintered bodies.\n\n[0019]In one preferred embodiment of the present invention, the step of arranging the green compacts preferably includes the step of arranging the green compacts on the receiving plane in a direction in which the projection area of each of the green compacts onto the receiving plane is minimized.\n\n[0020]In another preferred embodiment of the present invention, the step of pressing and compacting an alloy powder preferably includes the step of preparing a plurality of green compacts each having at least one curved surface, and the step of arranging the green compacts preferably includes the step of arranging the green compacts on the receiving plane so that the at least one curved surface of each of the green compacts crosses the receiving plane substantially at right angles.\n\n[0021]In still another preferred embodiment, the step (a) preferably includes the step of preparing a plurality of green compacts each having: two principal surfaces that are opposed to each other; two side surfaces that are opposed to each other with the two principal surfaces interposed therebetween; and two end surfaces that cross both the principal surfaces and the side surfaces substantially at right angles. The step (b) preferably includes the step of arranging the green compacts on the receiving plane so that one of the two end surfaces of each of the green compacts contacts with the receiving plane.\n\n[0022]In yet another preferred embodiment, the step of pressing and compacting an alloy powder preferably includes the step of pressing and compacting the alloy powder under an aligning magnetic field, and the step of arranging the green compacts preferably includes the step of arranging the green compacts on the receiving plane so that orientation directions of the alloy powder are substantially parallel to the receiving plane.\n\n[0023]In yet another preferred embodiment, the step of pressing and compacting an alloy powder preferably includes the step of preparing the green compacts having a green density of about 4.1 g/cm3 to about 4.5 g/cm3.\n\n[0024]In yet another preferred embodiment, the step arranging the green compacts preferably includes the step of arranging the green compacts on the receiving plane so that the green compacts are in contact with each other in a horizontal direction (which is typically substantially parallel to the thickness direction of the green compacts).\n\n[0025]In this particular preferred embodiment, the step of arranging the green compacts preferably includes the step of arranging the green compacts, which have already been magnetized, on the receiving plane so that the green compacts attract each other via a magnetic force produced between the green compacts.\n\n[0026]Alternatively or additionally, the step of arranging the green compacts may include the step of applying an anti-fusing agent to at least portions of the green compacts and arranging the green compacts on the receiving plane so that the green compacts come into contact with each other via the anti-fusing agent. Typically, the anti-fusing agent is applied to a portion of each of the green compacts.\n\n[0027]Specifically, the anti-fusing agent preferably includes a powder of Y2O3. More specifically, the Y2O3 powder preferably has a mean particle size of about 1 μm to about 10 μm, more preferably about 3 μm to about 5 μm.\n\n[0028]In this particular preferred embodiment, the step of arranging the green compacts preferably includes the step of applying slurry, in which the Y2O3 powder is dispersed in an organic solvent, to the portions of the green compacts.\n\n[0029]In yet another preferred embodiment, the method may further include the step of removing a portion of each of the sintered bodies, which portion has been in contact with the receiving plane, and a surrounding portion thereof.\n\n[0030]Another preferred embodiment of the present invention provides a sintered magnet for use in a motor. The magnet is preferably produced by the method according to any of the preferred embodiments of the present invention described above.\n\n[0031]Other features, elements, characteristics, steps and advantages of the present invention will become more apparent from the following detailed description of preferred embodiments with reference to the attached drawings.\n\nBRIEF DESCRIPTION OF DRAWINGS\n\n[0032]FIGS. 1A and 1B are respectively a cross-sectional view and a plan view schematically illustrating how green compacts 95 may be arranged in a sintering process step of a method for producing rare earth sintered magnets according to a preferred embodiment of the present invention.\n\n[0033]FIG. 2 is a perspective view illustrating how adjacent ones of the green compacts 95 shown in FIGS. 1A and 1B may be arranged.\n\n[0034]FIGS. 3A and 3B are respectively a cross-sectional view and a plan view schematically illustrating a known arrangement of the green compacts 95 in a sintering process step of a conventional method for producing rare earth sintered magnets.\n\n[0035]FIGS. 4A, 4B and 4C illustrate what problems are caused by the known arrangement of the green compacts 95 in the sintering process step, wherein FIG. 4A is a perspective view of the green compact 95 to be processed into a sintered magnet for a motor, and FIGS. 4B and 4C are cross-sectional views schematically illustrating how the green compact 95 may be mounted on a base plate 94.\n\nBEST MODE FOR CARRYING OUT THE INVENTION\n\n[0036]Hereinafter, preferred embodiments of the present invention will be described as being applied to a method for producing R-T-(M)-B type sintered magnets for use in a motor, for example. It should be noted, however, that the present invention is not limited to the following specific preferred embodiments but is broadly applicable to a method for producing rare earth sintered magnets of any of various other types.\n\n[0037]A method for producing rare earth sintered magnets according to various preferred embodiments of the present invention is mainly characterized by the manufacturing and processing step of sintering green compacts. Accordingly, the following description of preferred embodiments of the present invention will be focused on this sintering process step and the description of other manufacturing and processing steps, which may be carried out by known techniques, will be omitted herein.\n\n[0038]A method for producing rare earth sintered magnets according to a preferred embodiment of the present invention preferably includes the steps of pressing and compacting an alloy powder for the rare earth sintered magnets, thereby preparing a plurality of green compacts, arranging the green compacts on a receiving plane in a direction in which a projection area of each of the green compacts onto the receiving plane is not maximized, and heating the green compacts, thereby sintering the green compacts and obtaining a plurality of sintered bodies.\n\n[0039]In the step of arranging the green compacts, the green compacts are preferably stored in a case having the receiving plane. The sintering step preferably includes the step of heating the case, including the green compacts therein, in its entirety. When such a sintering case is used, the atmosphere for the sintering process step can be more uniform, for example.\n\n[0040]In this method, the step of arranging the green compacts may be carried out by using the sintering case 9 shown in FIGS. 3A and 3B, for example. In the drawings to be referred to in the following description, each member having substantially the same function as the counterpart shown in FIG. 3A, 3B, 4A, 4B or 4C will be identified by the same reference numeral and the description thereof will be omitted herein.\n\n[0041]In one preferred embodiment of the present invention, the green compacts 95 to be processed into sintered magnets for a motor may be arranged as shown in FIGS. 1A, 1B and 2.\n\n[0042]In this preferred embodiment, the green compacts 95 may have an outer diameter of about 22.13 mm, a width of about 26.14 mm, a thickness of about 9.73 mm and a height of about 45 mm in the arrangement shown in FIGS. 1A and 1B, for example. In the sintering case 9, the bottom plate (i.e., the flat-plate portion) 90a of the bottom container 90 thereof may have approximate dimensions of 270 mm×305 mm×1 mm (thickness), while the cover 92 thereof may have approximate outer dimensions of 280 mm×315 mm×70 mm (height) and a thickness of about 1.5 mm, for example. The bottom container 90 and the cover 92 may be made of a material that can resist the heat generated in the sintering and other process steps, e.g., stainless steel or a refractory metal such as molybdenum. For example, the sintering case 9 may be made of SUS310. In that case, the case 9 is not deformed due to the heat so much as a case 9 made of SUS304.\n\n[0043]In the preferred embodiment illustrated in FIGS. 1A and 1B, the green compacts 95 are arranged on the sintering base plate 94 that has been mounted on the bottom plate 90a of the bottom container 90. Alternatively, the sintering base plate 94 may be omitted and the green compacts 95 may be mounted directly on the bottom plate 90a of the bottom container 90. That is to say, either the surface of the base plate 94 or that of the bottom plate 90a functions as a surface that receives the green compacts 95 thereon. The sintering base plate 94 is preferably used because a large number of green compacts 95 can be arranged thereon easily. The sintering base plate 94 may have approximate dimensions of 250 mm×300 mm×1 mm (thickness), for example. The sintering base plate 94 is preferably made of molybdenum. This is because molybdenum has low reactivity with the green compacts and exhibits good thermal conductivity and thermal resistance. The receiving plane of this sintering base plate 94 preferably has an average surface roughness Ra of about 1 μm to about 50 μm.\n\n[0044]In this preferred embodiment, the green compacts 95 are arranged on the base plate 94 in a direction in which the projection area of each of the green compacts 95 onto the base plate 94 is minimized, unlike the arrangement shown in FIGS. 4A and 4B. According to such an arrangement, a greater number of green compacts 95 can be arranged within the same limited area. Naturally, it is most efficient to arrange the green compacts 95 in the direction in which the projection area of each green compact 95 onto the base plate 94 is minimized. However, the green compacts 95 may also be arranged in any other direction as long as the projection area of each green compact 95 onto the base plate 94 is not maximized. This is because unless the projection area is maximized, the projection area decreases to a certain degree and the green compacts 95 can be stored in the case 9 more efficiently. If the green compacts95 having a substantially flat-plate shape are arranged so as to have their center of mass located at a low level as in the prior art, then the projection area of each green compact 95 onto the base plate 94 is maximized as described above. In contrast, in this preferred embodiment of the present invention, the green compacts 95 are arranged so as to have minimized projection areas.\n\n[0045]When these green compacts 95 have curved surfaces (i.e., the concave surface 95a and convex surface 95b) like the green compacts 95 to be processed into sintered magnets for use in a motor, the green compacts 95 are preferably arranged so that their curved surface(s) 95a and/or 95b cross(es) the surface of the base plate 94 substantially at right angles. As shown in FIGS. 4A, 4B and 4C, the green compact 95 has a substantially flat-plate shape and the curved surfaces 95a and 95b as its opposed principal surfaces. If such a green compact 95 is mounted on the base plate 94 so that the curved surface 95a or 95b thereof is opposed to the surface of the base plate 94, then the area of contact between the green compact 95 and the base plate 94 is small, a greater frictional stress is created due to the shrinkage of the green compact 95 being sintered and the resultant sintered body is damaged or deformed to a greater degree as already described with reference to FIGS. 4B and 4C. In contrast, if the green compact 95 is mounted on the base plate 94 so that a flat surface thereof (e.g., the bottom 95c) is in contact with the surface of the base plate 94 as shown in FIGS. 1A, 1B and 2, then the area of contact between the green compact 95 and the base plate 94 increases and a smaller frictional stress is created due to the shrinkage of the green compact 95 being sintered. Furthermore, the amount of maximum shrinkage in the contact area between the green compact 95 and the base plate 94 (i.e., the maximum value of one-dimensional lengths decreasing) is smaller than the arrangement shown in FIGS. 3A and 3B. Thus, the frictional stress decreases because of this reason also. To prevent the green compact 95 and the base plate 94 from being fused together unintentionally, a bedding powder is preferably interposed between the green compact 95 and the base plate 94.\n\n[0046]However, if the green compact 95 is mounted on the base plate 94 with its bottom 95c facedown as shown in FIG. 2, then the green compact 95 will have a center of mass located at a higher level and will fall down more easily. Also, in that case, it is much more troublesome to arrange a great number of green compacts 95 in such a position. The quasi-flat-plate green compact 95 illustrated in FIG. 2 falls down particularly easily. This is because its center of mass easily shifts from its bottom 95c even when the green compact 95 leans only slightly. Accordingly, where the green compacts 95 should be mounted on the base plate 94 with their bottom 95c facedown, the green compacts 95 are preferably arranged thereon so as to come into contact with each other horizontally (typically, in a direction that is substantially parallel to the surface of the base plate 94 and substantially parallel to the thickness direction of the green compacts 95).\n\n[0047]Particularly if the green compacts 95 have been magnetized (e.g., if the green compacts 95 have acquired remanent magnetization during the compaction process carried out under a magnetic field), then the green compacts 95 attract each other via a magnetic force produced between them. As a result, the green compacts 95 can be arranged in a row stably. The green compacts 95 to be processed into sintered magnets for use in a motor acquire remanent magnetization M while being subjected to a compaction process under an aligning magnetic field, and attract each other via the remanent magnetization M as shown in FIG. 2. The magnitude of the remanent magnetization M (i.e., remanence) is preferably from about 0.002 T to about 0.006 T. The green compact, which has been obtained by compacting a material alloy powder under an aligning magnetic field to make an anisotropic sintered magnet as described above, is preferably demagnetized incompletely so as to retain a certain degree of remanent magnetization.\n\n[0048]Also, as shown in FIG. 2, the direction of the remanent magnetization M (which will be herein also referred to as the “orientation direction” of the green compacts or alloy powder) is preferably substantially parallel to the direction in which the green compacts 95 are arranged, i.e., a substantially horizontal direction (typically, substantially parallel to the surface of the base plate 94). The green compacts 95 exhibit anisotropic magnetic properties. Accordingly, the green compacts 95 being sintered shrink at a relatively high rate in a direction that is substantially parallel to the magnetization direction thereof. For that reason, to minimize the amount of shrinkage, which is obtained by multiplying the shrinkage rate by the length, the green compacts 95 have preferably been magnetized in a direction defined by the shortest one of the three dimensions of the green compacts 95. For example, the quasi-flat-plate green compacts 95 have preferably been magnetized in the thickness direction as shown in FIG. 2. However, the direction of the remanent magnetization M is not limited to the thickness direction but may be any other direction as long as the green compacts 95 can be magnetized in such a manner as to attract each other. For instance, if the green compacts 95 to be arranged as shown in FIG. 2 have been magnetized in the height direction (i.e., vertically), then the green compacts 95 may be arranged in such a manner as to alternate their magnetization directions in the direction in which the green compacts 95 are arranged, i.e., so that the magnetization direction of one of the green compacts 95 is opposite to that of a horizontally adjacent one of them. Then, the green compacts 95 can also attract each other.\n\n[0049]On the other hand, if there is no need to apply any aligning magnetic field during the process step of preparing the green compacts (e.g., in making green compacts for isotropic magnets), a magnetic field may also be applied afterward to the as-pressed, green compacts 95 so that the green compacts 95 will have a remanence falling within the range specified above.\n\n[0050]It should be noted that to arrange the green compacts 95 as stably as possible, the number of green compacts 95 that make up each row is preferably determined appropriately in accordance with the shape of the green compacts 95 to be obtained. More specifically, to increase the stability of the row of green compacts 95, the number of green', '技术领域 \n\n [0001] 稀土烧结磁铁的制造方法技术领域本发明涉及稀土烧结磁铁的制造方法。 \n\n 背景技术 \n\n [0002] 当前在各种应用领域中广泛使用的稀土烧结磁体包括sa钴(Sm-Co)型磁体和钕铁硼型磁体(在本文中称为“ RT-(M)-B” 磁铁”)。 其中,RT-(M)-B型磁体(其中R为包括钇(Y)的稀土元素中的至少一种,通常为钕(Nd),T为单独的Fe或Fe的混合物,  Co和/或Ni,M是选自Al,Ti,Cu,V,Cr,Ni,Ga,Zr,Nb,Mo,In,Sn,Hf,Ta和W以及B中的至少一种添加剂。 是单独的硼还是硼和碳的混合物),越来越多地用于各种类型的电子设备中。 这是因为R-T-(M)-B型磁体表现出最大能量积(BH) 最高  它比任何其他类型的磁体都高,但相对便宜。 \n\n [0003] 通过将稀土合金粉碎成合金粉末,在磁场下将合金粉末压制并压实以获得生坯(压制坯),然后在烧结炉中烧结生坯,来制造稀土烧结磁体。 如果在烧结过程中氧化R-T-(M)-B型磁体中包含的稀土元素,如钕,则其磁性能会大大降低。 因此,为了避免不利的氧化,烧结炉内的气氛通常是Ar,He或任何其他惰性气体的真空或减压惰性气氛。 在烧结多个生压坯时,将那些生压坯装载到可气密密封的烧结盒中(也称为“烧结包”),然后将包括那些生压坯的烧结盒整体加热以提高生产率。 另外,当要同时烧结大量的生坯时,使用装配有像架子一样堆积的许多烧结基板的烧结箱。 在这种情况下,将压制的生坯布置在烧结基板上,然后将这些板像架子一样存储在烧结箱内。 \n\n [0004] 例如,绿色契约 95  被加工成电动机用的烧结磁铁之后,将其布置在烧结箱内进行烧结 9  如图所示。  3A和3B。 \n\n [0005] 在图1至图4所示的示例中, 在图3A和3B中,烧结盒 9  包括一个底部容器 90  和封面 92  装有底部容器 90 。 底部容器 90  包括一个底板 90 a  和侧壁 90 b 。 在底部容器内 90 ,许多烧结基板 94  垂直堆叠,并通过垫片在它们之间提供预定间隙 96 。 烧结盒 9  例如在烧结过程中,将其加热至约1,000℃或更高的高温。 因此,底部容器 90  和封面 92  两者均由具有高耐热性的材料制成(例如,钼或SUS310)。 \n\n [0006] 侧壁 90 b  底部容器的 90  包围烧结基板的外围 94  并支持封面 92  在其上边缘。 侧壁包围的空间 90 b  (即储存空间)的水平尺寸(即宽度)略大于烧结基板的宽度 94 。 差异可以在几毫米到几厘米的数量级上。 无论如何,这种烧结情况 9  设计成在烧结基板之间具有狭窄的间隙 94  和侧壁 90 b 。 这种狭窄的间隙可用于存储尽可能多的生坯 95  烧结盒内 9  尽可能高效地同时进行。 这是因为,间隙越窄,则烧结基板的宽度越大。 94  可。 另外,当烧结基板之间的间隙 94  和侧壁 90 b  很小,即使烧结的情况 9  在运输过程中振动,例如,烧结基板 94  不能在烧结盒内移动 9  以至于破坏了垫片 96  在烧结基板上 94  无意间。 \n\n [0007] 如图所示。 在图4A至4C中,每个生坯 95  具有包括凹面的弯曲表面 95 a  和凸面 95 b 。 当绿色紧凑 95  如图所示。 沿着与凹凸面交叉的平面观察图4A 95 a  和 95 b  成直角时,压块的横截面 95  具有包括两个弧的形状。 例如,凹凸表面 95 a  和 95 b  可以构成两个具有彼此不同的曲率半径的圆柱面的各个部分。 在这种情况下,由凸面定义的外半径 95 b  可能大于凹面所定义的内半径 95 a 。 具有这种形状的生坯被称为“弯曲的生坯”或“拱形的生坯”。 如图1所示。  4A,这种绿色紧凑型 95  包括两个曲面(即,凹面和凸面 95 a  和 95 b ,在本文中也称为“主表面”,彼此相对; 两个侧面 95 d  两个曲面彼此相对的 95 a  和 95 b  插在他们之间; 和两个端面 95 c  穿过两个曲面 95 a  和 95 b  和侧面 95 d  基本上成直角。 主面 95 a  和 95 b  面积大于生坯的任何其他表面 95 。 通常,端面(或底部) 95 c  面积小于生坯的任何其他表面 95 。 \n\n [0008] 绿色契约 95  如此形状的玻璃被安装在每个烧结基板上 94  以免彼此接触,例如使凹面的水平边缘 95 a  或凸面的中心 95 b  与烧结基板接触 94  如图所示。  4B和4C。 这些布置用于防止压坯 95  从安装压粉坯的制造和加工步骤中翻过来 95  在烧结基板上 94  或装入烧结基板 94  进入案件 9 , 例如。 为此,绿色压坯 95  当安装在烧结基板上时,它们的质心位于尽可能低的水平(即,使其顶部位于尽可能低的水平) 94 。 为了增加方向度,绿色压实 95  (例如,要被加工成R-T-(M)-B型磁体的生坯)的生坯密度低于要被加工成铁氧体磁体的生坯的生坯密度。 绿色契约 95  被加工成R-T-(M)-B磁体的生坯密度可能约为3.9 g / cm 3  至约5.0 g / cm 3 , 例如。 因此,这些绿色契约 95  它们非常脆,很容易因硬物(例如跌落或掉落的瞬间)而破裂或撞击。 因此,这些绿色契约 95  应该布置得不会轻易翻身。 应该注意的是绿色压粉 95  布置在同一烧结基板上 94  可能已单独进行压实处理,也可能是通过将单个生压坯切割并分成多个较小的物体而获得的。 \n\n [0009] 此外,如果绿色压实 95  直接安装在烧结基板上的 94  烧结,然后得到烧结体 95  和烧结基板 94 有时可能会无意间部分融合在一起。 这是因为R-T-(M)-B型合金粉末中包含的Nd等稀土元素和烧结基板中包含的金属元素 94  可能在等于或低于烧结温度的温度下引起共晶反应。 如果底板 94  和烧结体 95  被部分融合在一起,生坯的大小 95  被烧结不能随烧结过程的进行而平稳地减少,因此可能使所得的烧结体破裂或碎裂 95 。 另外,即使基板 94  和烧结体 95  如果没有融合在一起,则基板之间可能会产生不均匀的摩擦 94  和烧结体 95 ,因此也可能使烧结体破裂 95  在其与烧结基板接触的表面上 94 。 \n\n [0010] 因此,防止烧结基板 94  和烧结体 95  不会熔合在一起,烧结基板的表面 94  根据已知技术,用床上用品粉末(未示出)涂覆粉尘,从而使压坯 95  可以将其烧结在床上用品粉末上(例如,参见日本特开平4-154903号公报)。 床上用品粉末必须是与生坯表现出低反应性的材料的粉末 95  高温下化学稳定性高。 当绿色压实时 95  由于床上用品粉末包括稀土金属,因此其粉末可以是与稀土金属具有低反应性的材料的粉末,例如诸如氧化钕或氧化钇的稀土氧化物的粉末。 通过使用这样的垫层粉末,烧结基板 94  和烧结体 95  没有融合在一起,因此,部分烧结体 95  与底板接触的 94  既不损坏(例如,破裂)也不变形。 \n\n [0011] 但是,如果有多个绿色契约 95  布置在烧结箱内 9  如图所示。  3A和3B,然后是生坯数量 95  可以存放在烧结盒内 9  同时,它相对较小,并且不能如此有效地执行烧结过程。 具体而言,当平板坯压实时 95  的安装要使其质心位于尽可能最低的水平,即这些压粉坯的投影面积 95  在基板上 94  相当大,因此减少了生坯的数量 95  可以安排在有限的区域内。 如本文所用,每个生坯的“投影区域” 95  表示绿色契约所覆盖的区域 95  在基板上 94 。 \n\n [0012] 另外,如果绿色压实 95  如图1所示安装。  4B或 4 C,这些绿色契约中的每一个 95  与基板接触 94  在狭窄的区域。 然后,随着烧结过程的进行,由于生坯的收缩而产生的(摩擦)应力 95  将集中在接触部分上。 在这种情况下,即使如上所述使用垫层粉,烧结体 95  仍然会因所产生的摩擦应力而损坏或变形。 \n\n [0013] 此外,当绿色紧凑 95  如图1所示安装。 在图4C中,位于凸面中心附近的部分 95 b  契约的 95  损坏或变形。 因此,不可能仅去除烧结体的损坏或变形的部分 95  并使用其剩余部分。 另一方面,当绿色紧凑时 95  如图1所示安装。  4B,凹面 95 a  契约的 95  其水平边缘变形。 这个凹面 95 a  其形状不应变形,以使其与电动机的转子轴匹配。 因此,也难以仅从其中去除变形部分并将剩余部分加工成用于烧结磁体的预定形状。 就是说,如果已经如图1所示安装了任何一个烧结体,则将其安装在烧结体上。  4B或 4 C变得有缺陷,则不能再使用有缺陷的烧结体,从而大大降低了烧结磁体的产量。 \n\n [0014] 另一方面,日本特开昭61-125114号公报公开了一种在制作比较薄的稀土类烧结磁铁时,减少不良(例如翘曲或变形)的烧结体的数量的技术。 根据日本特开昭61-125114号公报中公开的技术,将厚度小的生坯夹在一对由相同材料制成且形状相同的较厚的生坯之间。 绿色紧凑。 而且,根据该技术,在需要时,在这些生坯之间和/或在生坯与基板之间插入不容易与生坯反应的材料的粉末。 \n\n [0015] 然而,在日本特开昭61-125114号公报中公开的方法中,不仅要制备薄的生坯,而且还要制备另外两个较厚的生坯,以获得所需的小厚度的单个烧结体,从而降低了成品率。 的稀土合金粉末材料。 另外,根据这种技术,难以增加生坯的数量。 95  可以装入烧结盒中 9  同时。 此外,在烧结生坯时 95  具有如图1所示的形状。 如图4A所示,难以充分减少所得烧结体的损坏或变形。 95  由于生坯收缩产生的摩擦应力 95  被烧结。 可以理解的是,由于垂直堆叠的生坯的总质量为,在堆叠的最低的生坯中的一个与基板之间产生的摩擦应力会增加,以进一步损坏或使所得烧结体变形。 应用于与底板接触的最低的生坯。 \n\n [0016] 如上所述,稀土合金粉末的生坯具有较大的比重(例如,R-T-(M)-B型合金粉末的生坯具有约3.9g / cm的比重。 3  或更多),并且非常脆弱。 因此,当由于烧结的生坯的收缩而产生摩擦应力(其损失多达其体积的约40%或更多)时,烧结体容易损坏或变形。 特别地,如图1所示,当安装压粉坯以使其质心位于较低水平并且与基板的接触面积较小时。  4B或 4 C,所得的烧结体非常容易损坏或变形。 另外,也难以将这样的生坯有效地存储在烧结壳体内。 \n\n 发明内容 \n\n [0017] 为了克服上述问题,本发明的优选实施方式提供了一种用于生产稀土烧结磁体的方法,该方法使损坏或变形的烧结体的数量最小化并且大大提高了生产率。 \n\n [0018] 本发明的一个优选实施方案提供了一种用于生产稀土烧结磁体的方法。 该方法优选包括以下步骤:压制和压实用于稀土烧结磁体的合金粉末,从而制备多个生坯,将生坯沿每个生坯的投影区域的方向布置在接收平面上。 不能最大程度地增大在接收面上的厚度,并且加热生坯,从而烧结生坯并获得多个烧结体。 \n\n [0019] 在本发明的一个优选实施例中,布置生坯的步骤优选包括以下步骤:将生坯在每个生坯在接收平面上的投影面积最小的方向上布置在接收平面上。 \n\n [0020] 在本发明的另一个优选实施方案中,压制和压实合金粉末的步骤优选地包括制备多个均具有至少一个弯曲表面的生坯的步骤,并且布置生坯的步骤优选地包括以下步骤: 将生压坯布置在接收平面上,使得每个生压坯的至少一个弯曲表面基本上成直角与接收平面相交。 \n\n [0021] 在又一个优选的实施方案中,步骤(a)优选包括制备多个生压块的步骤,每个生压块具有:两个彼此相对的主表面;和彼此相对的主表面。 彼此相对的两个侧表面,两个主表面介于两个侧表面之间。 并且,两个与主表面和侧面交叉的端面大致成直角。 步骤(b)优选包括以下步骤:将生坯布置在接收平面上,使得每个生坯的两个端面之一与接收平面接触。 \n\n [0022] 在又一优选实施例中,压制和压实合金粉末的步骤优选包括在对准磁场下压制和压实合金粉末的步骤,并且布置生坯的步骤优选包括将生坯布置在其上的步骤。 合金粉末的取向方向基本上平行于接收平面。 \n\n [0023] 在又一个优选的实施方案中,压制和压实合金粉末的步骤优选地包括制备具有约4.1g / cm的生坯密度的生坯的步骤。 3  至约4.5 g / cm 3 。 \n\n [0024] 在又一优选实施例中,布置生坯的步骤优选地包括以下步骤:将生坯布置在接收平面上,以使生坯在水平方向(通常基本平行于厚度方向)上彼此接触。 的绿色契约)。 \n\n [0025] 在该特定的优选实施例中,布置生坯的步骤优选地包括以下步骤:将已经磁化的生坯布置在接收平面上,使得生坯通过生坯之间产生的磁力相互吸引。  。 \n\n [0026] 替代地或附加地,布置生坯的步骤可以包括以下步骤:将抗熔剂施加到生坯的至少一部分上,并将生坯布置在接收平面上,以使生坯彼此接触。 通过防熔剂。 通常,将抗熔剂施加到每个生压坯的一部分上。 \n\n [0027] 具体地,抗熔剂优选包括Y粉末。 2 Ø 3 。 更具体地说,Y 2 Ø 3  粉末优选具有约1μm至约10μm,更优选约3μm至约5μm的平均粒度。 \n\n [0028] 在该特定的优选实施例中,布置生坯的步骤优选包括施加浆料的步骤,其中Y 2 Ø 3  粉末分散在有机溶剂中,到达生坯的各个部分。 \n\n [0029] 在又一个优选实施例中,该方法可以进一步包括以下步骤:去除每个烧结体的一部分,该部分已经与接收平面接触;以及该部分的周围部分。 \n\n [0030] 本发明的另一个优选实施例提供了一种用于电动机的烧结磁体。 磁体优选通过根据上述本发明的任何优选实施方式的方法来制造。 \n\n [0031] 通过以下参考附图对优选实施例的详细描述,本发明的其他特征,要素,特征,步骤和优点将变得更加明显。 \n\n 附图说明 \n\n [0032] 无花果 图1A和图1B分别是示意性地示出压粉机的横截面图和平面图。 95 在根据本发明的优选实施方式的用于生产稀土烧结磁体的方法的烧结工艺步骤中,可以布置金属氧化物-铝。 \n\n [0033] 图。 图2是示出相邻的压粉体如何相互接触的立体图。 95  如图所示。 可以布置图1A和1B。 \n\n [0034] 无花果 图3A和图3B分别是示意性地示出生坯的已知布置的截面图和平面图。 95  在用于生产稀土烧结磁体的常规方法的烧结工艺步骤中。 \n\n [0035] 无花果 4A, 4 B和 4 C说明了由生坯的已知布置引起的问题 95  在烧结工艺步骤中,其中 图4A是生坯的透视图 95  图2是将其加工成电动机用的烧结磁铁的图。 图4B和图4C是示意性地示出生坯的状态的剖视图。 95  可以安装在基板上 94 。 \n\n 实施本发明的最佳模式 \n\n [0036] 在下文中,将描述本发明的优选实施例应用于例如用于电动机的R-T-(M)-B型烧结磁体的制造方法。 然而,应注意,本发明不限于以下特定的优选实施方案,而是可广泛地应用于生产各种其他类型的稀土烧结磁体的方法。 \n\n [0037] 根据本发明的各种优选实施方式的稀土烧结磁体的制造方法的主要特征在于烧结生坯的制造和加工步骤。 因此,本发明的优选实施方式的以下描述将集中于该烧结工艺步骤,并且在这里将省略对可以通过已知技术进行的其他制造和处理步骤的描述。 \n\n [0038] 根据本发明的优选实施方式的稀土烧结磁体的制造方法优选包括以下步骤:压制和压实用于稀土烧结磁体的合金粉末,从而制备多个生坯,将生坯布置在接收体上。 在未将每个生坯在接收面上的投影面积最大化的方向上进行平整,并加热生坯,从而烧结生坯并获得多个烧结体。 \n\n [0039] 在布置生坯的步骤中,优选将生坯存储在具有接收平面的壳体中。 烧结步骤优选包括整体加热包括生压坯的壳体的步骤。 当使用这种烧结壳体时,例如,用于烧结工艺步骤的气氛可以更均匀。 \n\n [0040] 在该方法中,可以通过使用烧结盒来进行生坯的布置步骤。 9  如图所示。 例如,图3A和3B。 在以下描述中将参考的附图中,每个构件具有与图1所示的对应构件基本相同的功能。  3A, 3 B, 4 一种, 4 B或 4 C将由相同的附图标记标识,并且这里将省略其描述。 \n\n [0041] 在本发明的一个优选实施方式中,生坯 95  如图1和2所示,可以布置成被加工成用于电动机的烧结磁体。  1A, 1 B和 2 。 \n\n [0042] 在该优选实施例中,生坯 95  在图1和图2所示的布置中,该部件可以具有约22.13mm的外径,约26.14mm的宽度,约9.73mm的厚度和约45mm的高度。 例如,图1A和1B。 在烧结情况下 9 ,底板(即平板部分) 90 a  底部容器的 90  其盖子的尺寸可能约为270 mm×305 mm×1 mm(厚度) 92  例如,其外部尺寸可以为大约280mm×315mm×70mm(高度),并且可以具有大约1.5mm的厚度。 底部容器 90  和封面 92 可以由能够抵抗在烧结和其他工艺步骤中产生的热量的材料制成,例如,不锈钢或诸如钼的难熔金属。 例如烧结盒 9  可能由SUS310制成。 在这种情况下 9  不会因高温而变形 9  由SUS304制成。 \n\n [0043] 在图1和图2所示的优选实施例中,图1示出了一个实施例。  1A和1B,绿色压坯 95  布置在烧结基板上 94  已经安装在底板上 90 a  底部容器的 90 。 或者,烧结基板 94  可以省略,绿色契约 95  可以直接安装在底板上 90 a  底部容器的 90 。 也就是说,基板的任一表面 94  或底板的 90 a  用作接收生坯的表面 95  在其上。 烧结基板 94  最好使用,因为大量的生坯 95  可以很容易地安排在上面。 烧结基板 94  例如,可以具有大约250mm×300mm×1mm(厚度)的尺寸。 烧结基板 94  优选地由钼制成。 这是因为钼与生坯的反应性低,并且具有良好的导热性和耐热性。 该烧结基板的接收平面 94  优选具有约1μm至约50μm的平均表面粗糙度Ra。 \n\n [0044] 在该优选实施例中,生坯 95  布置在底板上 94  在每个生坯的投影区域的方向上 95  放在基板上 94  与图1和图2所示的布置不同,该布置被最小化。  4A和4B。 根据这样的布置,更多的生坯 95  可以安排在同一有限区域内。 自然,布置生坯是最有效的 95  在每个生坯的投影区域的方向上 95  放在基板上 94  被最小化。 然而,绿色契约 95  也可以沿任何其他方向排列,只要每个生坯的投影面积 95  放在基板上 94  没有最大化。 这是因为,除非最大程度地增大投影面积,否则投影面积会减小到一定程度并且压坯 95  可以存放在箱子里 9  更有效率。 如果绿色压实 95  设置成具有大致平板形状,使其质心如现有技术中那样位于较低水平,然后每个生坯的投影区域 95  放在基板上 94  如上所述最大化。 相反,在本发明的该优选实施方式中,生坯 95  布置成具有最小的投影面积。 \n\n [0045] 当这些绿色契约 95  具有曲面(即凹面) 95 a  和凸面 95 b )就像绿色的粉饼 95  被加工成用于电机的烧结磁铁,生坯 95  优选布置成使得它们的弯曲表面 95 a  和/或 95 b  穿过基板表面 94  基本上成直角。 如图所示。  4A, 4 B和 4 C,绿色紧凑 95  具有大致平板形状和弯曲表面 95 a  和 95 b  作为其相对的主表面。 如果这样的绿色契约 95  安装在基板上 94  使曲面 95 a  要么 95 b  其与基板的表面相对 94 ,则生坯之间的接触面积 95  和基板 94  很小,由于生坯的收缩而产生更大的摩擦应力 95  如已经参考图1至图4所描述的那样,在进行烧结时,所得的烧结体更大程度地损坏或变形。  4B和4C。 相反,如果绿色紧凑 95 安装在基板上 94  使其表面平坦(例如,底部 95 c )与基板表面接触 94  如图所示。  1A, 1 B和 2 ,则生坯之间的接触面积 95  和基板 94  由于生坯的收缩而增加并且产生较小的摩擦应力 95  被烧结。 此外,生坯之间的接触面积最大收缩量 95  和基板 94  (即,一维长度的最大值减小)小于图1和图2所示的布置。  3A和 3 B.因此,由于该原因,摩擦应力也减小。 防止绿色压实 95  和基板 94  为了避免意外地将它们熔合在一起,最好在生坯之间插入床上用品粉末。 95  和基板 94 。 \n\n [0046] 但是,如果绿色紧凑 95  安装在基板上 94  底部 95 c  如图所示,面朝下。  2,然后绿色紧凑 95  质心位于较高的位置,并且更容易掉落。 而且,在这种情况下,布置大量的生坯比较麻烦。 95  在这样的位置。 准平板生坯 95  如图所示。  2特别容易掉落。 这是因为其质心很容易从其底部偏移 95 c  即使绿色紧凑 95  仅略微倾斜。 因此,绿色压实的地方 95  应该安装在基板上 94  与他们的底部 95 c  面朝下,绿色紧凑 95  最好在其上布置成水平地(通常在基本上平行于基板表面的方向上)彼此接触。 94  并且基本平行于生坯的厚度方向 95 )。 \n\n [0047] 特别是如果绿色压实 95  已被磁化(例如,如果绿色压坯 95  在磁场下的压实过程中获得了剩余的磁化强度),然后生坯 95  通过它们之间产生的磁力相互吸引。 结果,绿色压坯 95  可以稳定地连续排列。 绿色契约 95  被加工成电动机用的烧结磁铁的同时,在对准磁场下进行压紧处理的同时,获得剩余磁化强度M,并通过剩余磁化强度M相互吸引,如图2所示。  2.剩余磁化强度M(即剩磁)的大小优选为大约0.002T至大约0.006T。生压坯,其是通过在取向磁场下将材料合金粉末压制成各向异性的烧结磁体而获得的。 如上所述,最好将其完全消磁,以保持一定程度的剩余磁化强度。 \n\n [0048] 而且,如图2所示, 在图2中,剩余磁化方向M(在此也称为生坯或合金粉末的“取向方向”)优选基本平行于生坯的方向。 95  布置,即,基本上水平的方向(通常,基本上平行于基板的表面) 94 )。 绿色契约 95  表现出各向异性的磁性。 因此,生坯 95  烧结的α-β在基本上平行于其磁化方向的方向上以较高的速率收缩。 因此,为了将收缩率乘以长度而获得的收缩量最小化,压粉坯 95  最好在生坯的三个尺寸中最短的一个所定义的方向上被磁化 95 。 例如,准平板生坯 95 如图3所示,优选在厚度方向上将其磁化。  2.然而,剩磁M的方向不限于厚度方向,而可以是任何其他方向,只要生坯即可。 95  可以彼此吸引的方式被磁化。 例如,如果绿色压实 95  如图1所示布置。  2个在高度方向(即垂直)上被磁化,然后生坯 95  可以以这样的方式布置:在生坯的方向上交替改变它们的磁化方向。 95  排列,即生坯之一的磁化方向 95  与其中一个水平相邻的对象相反。 然后,绿色契约 95  也可以互相吸引。 \n\n [0049] 另一方面,如果在制备生坯的过程步骤中不需要施加任何对准磁场(例如,在制造各向同性磁体的生坯时),则随后也可以将磁场施加到压制件上。  ,绿色粉饼 95  这样绿色压实 95  剩磁将在上述指定范围内。 \n\n [0050] 应该注意的是,要安排生坯 95  尽可能稳定的压坯数量 95  最好根据生坯的形状适当地确定组成每一行的 95  获得。 更具体地说,增加一排压坯的稳定性 95 ,绿色压坯的数量 95  彼此接触需要足够大以防止一排生坯的重心 95  即使将行振动或倾斜到预期的程度,也不会轻易地从行的底部移动。 \n\n [0051] 如果绿色压实 95  排列成彼此相邻,然后压坯 95  可能会在烧结过程中无意间融合在一起。 为了避免这种不希望的情况,优选将抗熔剂施加到至少生坯压实的那些部分。 95  彼此接触。 也就是说,绿色压粉 95  优选地,它们之间夹有抗熔剂彼此接触。 \n\n [0052] 与传统的寝具粉末一样,抗熔剂也优选由对生坯表现出低反应性的材料制成。 95 例如稀土氧化物。 其中,抗熔剂优选包括Y粉末。 2 Ø 3 。 这是因为 2 Ø 3  具有高的化学稳定性,并且在烧结稀土合金粉末的生坯时几乎不被还原。 他们 2 Ø 3  粉末优选具有约1μm至约10μm,并且更优选约3μm至约5μm的平均粒度。 \n\n [0053] 可以将抗熔剂施加到生坯的预定部分上 95  通过用抗熔剂(例如Y粉末) 2 Ø 3 )分散在有机溶剂中。 有机溶剂优选为挥发性高的溶剂,例如,基于烃的溶剂如异链烷烃或基于低级醇的溶剂如乙醇。 当Y粉 2 Ø 3  用作抗熔剂,浆料中的Y 2 Ø 3  粉末以约20 g / l的浓度分散在异链烷烃中,可用刷子或喷雾器施用。 如果浆料具有这样的浓度,则可以通过用刷子仅一次将浆料施加到那些部分上而充分地防止不希望的定影。 如果需要,可以改变浆液的浓度(例如,在约10g / l至约800g / l的范围内)或施加更多次。 \n\n [0054] 可选地,绿色压粉 95  可以浸入浆料中。 但是,由于必须将大量有机溶剂吸收到生坯中,因此该技术不是优选的。 95 增加残留在所得烧结体中的碳量。 因此,优选将防熔剂选择性地施加到生坯的预定部分。 95  例如,通过刷那些部分。 另外,当使用浓度落在上述指定范围内的易挥发浆料时,无需执行干燥处理步骤。 \n\n [0055] 例如,在图1和图2所示的常规布置中,  3A和3B,只有100个绿色紧凑型 95  可以安装在四个基板上 94  (即25个绿色契约 95  每个基板)在烧结盒内 9  可以容纳底板 94  具有大约300mm×260mm的尺寸。 相比之下,根据图1至图4所示的布置,可以将图1中的箭头A表示为0。  1A和1B,多达130个生坯 95  可以安装在单个基板上 94 。 在图1至图4所示的布置中, 在图1A和1B中,相邻两排生坯之间的间隙 95  优选为约10mm或更大,并且烧结壳体的内壁之间的间隙 9  生坯行优选为约20mm以上。 这些间隙留给工人以安装生坯 95  在基板上 94  足够容易,并且可以根据需要进行更改。 \n\n [0056] 根据该优选实施例的布置,生坯 95  可以布置在烧结盒内 9  比传统的安排更有效率。 此外,生坯产生的摩擦应力 95  还可以减少被烧结的材料,从而使所得烧结体的损坏或变形最小。 \n\n [0057] 但是,取决于生坯的形状,大小或方向 95 ,烧结体 95  可能在底部弯曲 95 c  其。 例如,如果绿色压实 95  相对较高或沿高度方向(即垂直)定向,则生坯 95  可能会在高度方向上更大程度地收缩。 或底部 95 c  和绿色压粉的周围部分 95  由于其自身的重量,它们的垂直横截面形状可能会变形为梯形形状。 例如,当压力约为20 g / cm 2  或更多应用在底部 95 c  的绿色契约 95 ,绿色契约 95  可能在那里变形。 在这种情况下,绿色压实 95  可以这么说,被压碎了,底部扩大了 95 c 。 不过,如果绿色压实 95  如在该优选实施例中那样布置,仅底部 95 c  和绿色压粉的周围部分 95  如上所述变形。 因此,通过去除(例如,切割或磨削)仅那些变形的部分,例如,烧结体的其余部分。 95  仍可以使用,从而提高了材料(或烧结体)的产量。 考虑到生坯的选定形状,当预计很难避免这种变形时 95 ,绿色契约 95  可以将其形成为具有比所需的更大的尺寸,以便通过从其中去除不必要的变形部分来容易地应对变形。 以这种方式,也可以获得所需尺寸的烧结体。 \n\n [0058] 在图1至图4所示的示例中,  1A, 1 B和 2 ,绿色契约 95  布置在底板上 94  以便有他们的底部 95 c  与基板接触 94 。 或者,根据生坯的形状 95 ,绿色契约 95  也可以安排在那里以使其侧面 95 d  与基板接触 94 。 但是,仍然最优选安排生坯 95  在基板上 94  与他们的底部 95 c  面朝下,使每个绿色压坯的投影面积 95  放在基板上 94  被最小化。 \n\n [0059] 因此,根据上述本发明的各种优选实施方式,可以以更高的产率获得烧结体,并且例如可以更有效地生产用于电动机的烧结磁体。 根据本发明优选实施方式的稀土烧结磁体的生产方法可以特别有效地用于制备形状与最终获得的烧结磁体非常相似的烧结体。 \n\n [0060] 在上述的优选实施例中,要被加工成用于电动机的烧结磁体的生坯例如具有具有彼此不同的曲率半径的内弯曲表面和外弯曲表面。 然而,自然地可以将本发明应用于具有内部和外部弯曲表面且具有大致相等的曲率半径的生坯。 即使在这种替代的优选实施例中,每个生坯与烧结壳体的接收平面之间的接触面积也小于两个相邻生坯之间的接触面积。 此外,本发明同样适用于薄板生坯,该生坯具有大致长方体形状(例如,对于IMP电动机),并且粉末沿生坯的厚度方向取向。 \n\n [0061] 在上述优选实施例中,生坯被布置在烧结壳的水平接收平面上,使得这些生坯的底部(即,与烧结壳的接收平面接触的平面)和一个平面 生压坯彼此接触的表面(即生压坯的侧表面)以直角交叉。 然而,本发明不限于那些特定的优选实施例。 例如,在生坯的底部倾斜的情况下,即,生坯的底部和生坯彼此接触的平面(即,生坯的侧面)不交叉时 可以以直角使用烧结盒,该烧结盒具有一个接收平面,该接收平面限定了使生坯水平接触的角度。 例如,这种接收平面可以是具有锯齿形横截面的基板的粗糙表面。 然后,也可以将生坯稳定地布置在接收平面上。 \n\n [0062] 对根据本发明优选实施方式的稀土烧结磁体的制造方法中使用的稀土合金粉末没有特别限制。 例如,如美国专利No.5,816,641中公开的R-T-(M)-B型稀土合金粉末。 可以使用第4,770,723号或第4,792,368号。 一种R-T-(M)-B型稀土合金粉末,它是通过如美国专利No.5,420,641所述的带式浇铸工艺制备的。 例如,特别优选美国专利号5,383,978,以获得良好的磁性能。 美国专利No. 以上确定的美国专利号4,770,723、4,792,368和5,383,978通过引用并入本文。 压实过程可以通过各种已知技术中的任何一种来执行。 生坯密度通常约为3.9 g / cm 3  至约5.0 g / cm 3  通常约为4.1 g / cm 3  至约4.4 g / cm 3 。 \n\n [0063] 为了获得足够好的磁性能和致密性,用于生产根据本发明的优选实施方式的稀土烧结磁体的稀土合金粉末优选具有约2μm至约2μm的平均粒径(即FSSS粒径)。 约10μm,更优选约3μm至约6μm。 另外,生坯密度优选为约4.1g / cm。 3  至约4.5 g / cm 3 。 原因如下。 如果绿色密度低于约4.1 g / cm 3 ,则烧结的生坯可能会发生相当大的变形。 另一方面,如果绿色密度超过约4.5 g / cm 3 ,那么磁性粉末将表现出降低的取向度。 设置在基板上的生坯的垂直长度(即,高度)优选至多约70mm。 当高度为大约25mm或更大时,在本发明的优选实施例中采用的布置特别有效。 \n\n [0064] 存放在烧结箱中后 9 以上述方式,生坯 95  通过加热烧结盒进行烧结 9  全部。 烧结过程也可以通过已知技术进行,并且其条件可以根据要生产的稀土烧结磁体的类型来优化。 例如,绿色契约 95  可以通过以下制造和加工步骤烧结。 \n\n [0065] 首先,至少是烧结盒 9  将其装入设置在烧结设备入口处的制备室中,然后将制备室气密密封。 接下来,出于抗氧化目的,将准备室抽空至约2 Pa的压力。 \n\n [0066] 然后,烧结盒 9  被运送到燃尽室,在那里压实生坯 95  在约100°C至约600°C的温度和约2 Pa的压力下进行约1至6个小时的粘合剂去除过程。进行粘合剂去除过程以挥发并去除润滑剂( 或粘合剂)在烧结之前覆盖磁性粉末的表面。 为了在压制过程中改善磁性粉末的取向,在将粉末压制和压实之前,将润滑剂与磁性粉末混合。 润滑剂存在于磁性粉末的颗粒之间。 \n\n [0067] 脱胶过程完成后,进行烧结 9  被运送到烧结室,在那里生坯压实 95  在减压气氛(例如,具有约2Pa压力的Ar气)中,在约1,000℃至约1,100℃下烧结约2至5小时。 此后,烧结盒 9  被输送到冷却室,在那里烧结体被冷却直到烧结箱的温度 9  达到大约室温。 \n\n [0068] 最后是烧结案例 9  将其从冷却室中取出,然后装入时效处理炉中,在那里对烧结体进行常规时效处理。 老化处理可以在约2Pa的惰性气氛(例如氩气)中在约400℃至约600℃的温度下进行约1至5小时。 \n\n 工业适用性 \n\n [0069] 上面描述的本发明的各种优选实施例提供了一种用于生产稀土烧结磁体的方法,该方法使损坏或变形的烧结体的数量最小化并且极大地提高了生产率。 而且,即使任何烧结体已经部分变形,变形的部分也可以被去除而其余部分仍可以使用,因此有利地提高了材料的产量。 根据本发明的优选实施方式的稀土烧结磁体的制造方法可以特别有效地用于制造例如具有用于电动机的曲面的准平板烧结磁体。 \n\n [0070] 应当理解,以上描述仅是对本发明的说明。 在不脱离本发明的情况下,本领域技术人员可以设计出各种替代和修改。 因此,本发明旨在涵盖落入所附权利要求书范围内的所有这样的替代,修改和变化。');
INSERT INTO `os_patent_instruction_text` VALUES (12936, 22765, 'Technisches Gebiet\n\n[0001] Die vorliegende Erfindung bezieht sich auf eine Vorrichtung, die auf wirksame Weise dazu verwendet werden kann, einen Block einer Seltenerdmetall-Legierung einem Hydrierungsverfahren, beispielsweise einem Wasserstoff-Pulverisierungsverfahren, zu unterziehen.\n\nTechnischer Hintergrund\n\n[0002] Eine gattungsgemäße Vorrichtung ist aus der DE 100 07 449 A1 bekannt. Dieser Stand der Technik offenbart eine Vorrichtung zur Durchführung eines Wasserstoff-Pulverisierungsverfahrens bei Seltenerdmetall-Legierungsmaterial. Die Vorrichtung umfasst einen hermetisch verschließbaren Wasserstoffofen mit einer Öffnung, um den Wasserstoffofen mit dem Seltenerdmetall-Legierungsmaterial zu Be- und Entladen. Des Weiteren umfasst die Vorrichtung eine Einrichtung zum Einleiten eines Inertgases in den Wasserstoffofen.\n\n[0003] Die DE 24 48 714 A1 offenbart ein Verfahren zum Behandeln von Herstellungsgegenständen, wobei die Gegenstände innerhalb eines ersten Behälters angeordnet sind, welcher in einem zweiten Behälter vorgesehen ist. Ein Inneres des ersten Behälters ist über eine Öffnung mit dem zweiten Behälter verbunden. Nach einem Evakuieren des zweiten Behälters wird ein Druckgas von einer äußeren Quelle in den ersten Behälter zugeführt, so dass der Innendruck des ersten Behälters höher ist als der Innendruck des zweiten Behälters. Dadurch ergibt sich ein Gasstrom von dem ersten Behälter in den zweiten Behälter. Um einen kontinuierlichen Gasstrom von dem ersten Behälter zum zweiten Behälter zu bewirken, wird eine kontinuierliche Gaszufuhr in den ersten Behälter bereitgestellt.\n\n[0004] Die EP 0 992 309 A2 offenbart ein Verfahren zur Wasserstoffpulverisierung von Seltenerdmetall-Material. In einem ersten Verfahrensschritt wird das Seltenerdmetall-Material in einen Behälter gegeben, welcher mit hohlen Rohren durchsetzt ist, welche zwei Seitenflächen des Behälters miteinander verbinden. Anschließend wird das Seltenerdmetall-Material mithilfe von Wasserstoff pulverisiert.\n\n[0005] Ein Seltenerdmetall-Sintermagnet wird hergestellt durch Pulverisieren einer magnetischen Legierung zu einem Legierungspulver, Pressen des Legierungspulvers zur Herstellung eines Grünlings (Vorpresslings), Sintern des Grünlings und anschließendes Durchführen einer Alterungsbehandlung mit dem Sinterkörper. Die Seltenerdmetall-Sintermagnete, die derzeit in großem Umfang auf verschiedenen Anwendungsgebieten eingesetzt werden, umfassen einen Magneten vom Samarium-Kobalt(Sm-Co)-Typ und ein Magneten vom Neodym-Eisen-Bor-Typ (der hier nachstehend als ”ein Magnet vom R-T-(M)-B-Typ” bezeichnet wird, normalerweise auch als ”Magnet vom R-Fe-B-Typ” bezeichnet). Unter anderem wird der Magnet vom R-T-(M)-B-Typ immer häufiger in verschiedenen Typen von elektronischen Geräten verwendet. Dies ist darauf zurückzuführen, dass der Magnet vom R-T(M)-B-Typ ein maximales Energieprodukt (BH)max aufweist, das höher ist als dasjenige verschiedener anderer Magnet-Typen und dennoch relativ billig ist.\n\n[0006] In der allgemeinen Formel R-T-(M)-B des Magneten vom Neodym-Eisen-Bor-Typ steht R für mindestens eines der Seltenerdmetallelemente einschließlich Yttrium (Y) und in der Regel für Neodym (Nd), T steht entweder für Eisen (Fe) allein oder für eine Mischung aus Fe und einem Übergangsmetallelement, M steht für mindestens ein Additiv (einen Zusatz) und B steht entweder für Bor allein oder für eine Mischung von Bor und Kohlenstoff. Insbesondere steht T vorzugsweise entweder für Fe allein oder für eine Mischung von Fe und mindestens einem Vertreter aus der Gruppe Ni und Co. In dem zuletzt genannten Fall macht Fe vorzugsweise etwa 50 Atom-% oder mehr von T aus. Das Additiv (der Zusatz) M steht vorzugsweise für mindestens ein Element, ausgewählt aus der Gruppe, die besteht aus Al, Ti, Cu, V, Cr, Ni, Ga, Zr, Nb, Mn, Mo, In, Sn, Hf, Ta und W, und macht vorzugsweise etwa 1 Massenprozent oder weniger des gesamten Magneten aus. Wenn B für eine Mischung von Bor und Kohlenstoff steht, macht Bor vorzugsweise etwa 50 Atom-% oder mehr der Mischung aus. Sintermagneten vom R-T-(M)-B-Typ, auf die verschiedene bevorzugte Ausführungsformen der vorliegenden Erfindung anwendbar sind, sind beispielsweise in den US-Patenten Nr. 4 770 723 und 4 792 368 beschrieben, auf deren Inhalt hier Bezug genommen wird.\n\n[0007] In dem Stand der Technik wurde eine Legierung vom R-T-(M)-B-Typ hergestellt als ein Material für einen solchen Magneten durch Anwendung eines Barren-Gießverfahrens. Bei einem Barren-Gießverfahren werden normalerweise ein Seltenerdmetall, elektrolytisches Eisen und eine Ferrobor-Legierung als die jeweiligen Ausgangsmaterialien durch Anwendung eines Induktionserhitzungsverfahrens geschmolzen und dann wird die auf diese Weise erhaltene Schmelze verhältnismäßig langsam in einer Gießform abgekühlt, wodurch ein Legierungsbarren erhalten wird.\n\n[0008] Neuerdings hat ein schnelles Abkühlungsverfahren, beispielsweise ein Bandgießverfahren oder ein Schleudergießverfahren, viel Aufmerksamkeit in dem Stand der Technik gefunden. Bei einem schnellen Abkühlungsverfahren wird eine geschmolzene Legierung in Kontakt gebracht und verhältnismäßig schnell abgekühlt und verfestigt mit der äußeren oder inneren Oberfläche einer einzigen Abschreckungswalze oder einer Zwillings-Abschreckungswalze, einer rotierenden Abschreckungsscheibe oder einer sich drehenden zylindrischen Gießform, wodurch aus der geschmolzenen Legierung eine schnell erstarrte Legierung hergestellt wird, die dünner ist als ein Legierungsbarren. Die auf diese Weise hergestellte, schnell erstarrte Legierung wird nachstehend als ”Legierungsflake” bezeichnet. Der durch Anwendung eines solchen schnellen Abkühlungsverfahrens hergestellte Legierungsflake hat normalerweise eine Dicke von etwa 0,03 bis etwa 10 mm. Bei dem schnellen Abkühlungsverfahren beginnt die geschmolzene Legierung von der Oberfläche her fest zu werden, die mit der Oberfläche der Abschreckungswalze in Kontakt steht. Diese Oberfläche der geschmolzenen Legierung wird nachstehend als ”Walzenkontakt-Oberfläche” bezeichnet. Bei dem schnellen Abkühlungsverfahren wachsen kolumnare (stengelige) Kristalle in der Dickenrichtung, ausgehend von der Walzenkontakt-Oberfläche. Als Folge davon hat die schnell erstarrte Legierung, die unter Anwendung eines Bandgießverfahrens oder eines anderen schnellen Abkühlungsverfahrens hergestellt worden ist, eine Struktur (ein Gefüge), die (das) eine kristalline R2Fe14B-Phase und eine R-reiche Phase umfasst. Die kristalline R2Fe14B-Phase weist in der Regel eine Nebenachse in der Größe von etwa 0,1 bis etwa 100 um und eine Hauptachse in der Größe von etwa 5 bis etwa 500 um auf. Andererseits ist die R-reiche Phase, die eine nicht-magnetische Phase darstellt, die ein Seltenerdmetallelement R in einer verhältnismäßig hohen Konzentration enthält, in der Korngrenze zwischen den kristallinen R2Fe14B-Phasen dispergiert.\n\n[0009] Im Vergleich zu einer Legierung, die nach dem konventionellen Barrengießverfahren oder Formgießverfahren hergestellt worden ist (eine solche Legierung wird nachstehend als ”Barrenlegierung” bezeichnet) ist die schnell erstarrte Legierung innerhalb einer kürzeren Zeitspanne abgekühlt und verfestigt worden (d. h. mit einer Abkühlungsgeschwindigkeit von etwa 102°C/s bis etwa 104°C/s). Daher hat die schnell erstarrte Legierung eine feinere Struktur (ein feineres Gefüge) und eine kleinere durchschnittliche Kristallkorngröße. Außerdem hat in der schnell erstarrten Legierung die Korngrenze eine größere Fläche (Bereich) und die R-reiche Phase ist breit und dünn in der Korngrenze dispergiert. Die schnell erstarrte Legierung weist somit außerdem eine ausgezeichnete Dispersität (Verteilung) der R-reichen Phase auf. Da die schnell erstarrte Legierung die vorstehend beschriebenen vorteilhaften Merkmale aufweist, kann aus der schnell erstarrten Legierung ein Magnet mit ausgezeichneten magnetischen Eigenschaften hergestellt werden.\n\n[0010] Aus dem Stand der Technik ist auch ein alternatives Legierungherstellungsverfahren bekannt, das als ”Ca-Reduktionsverfahren (oder als Reduktions-Diffusions-Verfahren)” bekannt ist. Dieses Verfahren umfassen die Stufen der Zugabe von Calciummetall (Ca) und Calciumchlorid (CaCl) entweder zu der Mischung aus mindestens einem Seltenerdmetalloxid, Eisenpulver, reinem Borpulver und mindestens einem Vertreter aus der Gruppe Ferroborpulver und Boroxid in einem vorgegebenen Mengenanteil oder zu einer Mischung, die ein Legierungspulver oder ein gemischtes Oxid aus diesen Aufbauelementen in einem vorgegebenen Verhältnis enthält, die Durchführung einer Reduktions-Diffusions-Behandlung mit der resultierenden Mischung innerhalb einer inerten Atmosphäre, das Verdünnen des erhaltenen Reaktanten zur Herstellung einer Aufschlämmung und die anschließende Behandlung der Aufschlämmung mit Wasser. Auf diese Weise kann ein Feststoff aus einer Legierung vom R-T-(M)-B-Typ erhalten werden.\n\n[0011] Es sei darauf hingewiesen, dass jeder kleine Block aus einer festen Legierung nachstehend als ”Legierungsblock” bezeichnet wird. Der ”Legierungsblock” kann irgendeine von verschiedenen Formen von festen Legierungen haben, die nicht nur verfestigte Legierungen, die durch langsames oder schnelles Abkühlen einer Schmelze einer Werkstoff-Legierung hergestellt worden sind (beispielsweise ein Legierungsbarren, der durch Anwendung des konventionellen Barrengießverfahrens hergestellt worden ist, oder ein Legierungsflake, der durch Anwendung eines Abschreckungsverfahrens, beispielsweise eines Bandgießverfahrens, hergestellt worden ist), sondern auch eine feste Legierung umfasst, die durch Anwendung des Ca-Reduktionsverfahrens hergestellt worden ist.\n\n[0012] Ein Legierungspulver, das gepresst werden soll, wird erhalten durch Durchführung von Stufen, die umfassen das grobe Pulverisieren eines Legierungsblockes in irgendeiner dieser Formen durch Anwendung beispielsweise eines Wasserstoff-Pulverisierungsverfahrens und/oder irgendeines der verschiedenen mechanischen Mahlverfahren (beispielsweise durch Verwendung einer Federmühle, einer Hochleistungsmühle oder einer Scheibenmühle) und das feine Pulverisieren des resultierenden groben Pulvers (mit einer mittleren Teilchengröße von etwa 10 bis etwa 1000 um) durch Anwendung eines trockenen Mahlverfahrens unter Verwendung beispielsweise einer Strahlmühle. Das Legierungspulver, das gepresst werden soll, weist vorzugsweise eine mittlere Teilchengröße von etwa 1,5 bis etwa 7 um auf, um ausreichende magnetische Eigenschaften zu erzielen. Es sei darauf hingewiesen, dass sich der hier verwendete Ausdruck ”mittlere Teilchengröße eines Pulvers” auf den massenmittleren Durchmesser (MMD) bezieht, wenn nichts anderes angegeben ist. Das grobe Pulver kann auch durch Verwendung einer Kugelmühle oder einer Reibmühle fein pulverisiert werden.\n\n[0013] Das Wasserstoff-Pulverisierungsverfahren ist eine Pulverisierungsmethode, bei der das Phänomen ausgenutzt wird, wonach sehr kleine Risse in dem Seltenerdmetall-Legierungsmaterial (in der Regel ein Legierungsblock) erzeugt werden als Folge der Volumenausdehnung des Legierungsmaterials, das einer Wasserstoffgas-Atmosphäre ausgesetzt wird. Diese Ausdehnung wird hervorgerufen durch die Hydrierung des Seltenerdmetallelements, das in dem Legierungsmaterial enthalten ist. Im Vergleich zu dem mechanischen Mahlverfahren wird durch das Wasserstoff-Pulverisierungsverfahren die Produktivität erhöht und die Oxidation des Seltenerdmetallelements in den sich daran anschließenden Verarbeitungs- und Herstellungsstufen vermindert. Wenn eine schnell erstarrte Legierung als Werkstoff-Legierungsblock verwendet wird, kann der Legierungsblock durch das Wasserstoff-Pulverisierungsverfahren bis auf eine Größe von etwa 1 mm oder weniger (in der Regel bis auf eine mittlere Teilchengröße von etwa 10 bis etwa 1000 um) grob pulverisiert werden. Andererseits weist dann, wenn der Werkstoff-Legierungsblock ein Legierungsbarren oder eine feste Legierung ist, die durch Anwendung des Reduktions-Diffusions-Verfahrens hergestellt worden ist, das erhaltene grobe Pulver eine mittlere Teilchengröße von etwa 1 cm auf.\n\n[0014] In dem Stand der Technik wird die Wasserstoff-Pulverisierung einer Legierung vom R-T-(M)-B-Typ normalerweise durchgeführt durch Füllen eines Behälters, hergestellt aus einem rostfreien Stahl wie SUS 304, mit Seltenerdmetall-Werkstofflegierungsblöcken und anschließende Durchführung von Wasserstoffabsorptions- und Wasserstoffdesorptions-Verfahren mit den Legierungsblöcken im Innern eines Wasserstoffofens.\n\n[0015] Insbesondere werden zuerst die Legierungsblöcke, die in dem Behälter gelagert sind, in einen Wasserstoffofen eingeführt, in dem eine unter vermindertem Druck stehende Atmosphäre erzeugt wird. Danach wird ein Wasserstoffgas in den Wasserstoffofen eingeleitet, wodurch dafür gesorgt wird, dass die Legierungsblöcke Wasserstoff einschließen (oder absorbieren). Bei diesem Wasserstoffeinschluss (oder -Absorptions)-Verfahren wird das in den Legierungsblöcken enthaltene Seltenerdmetallelement hydriert. Die hydrierten Anteile der Legierungsblöcke dehnen sich in ihrem Volumen aus, wodurch darin Risse erzeugt werden. Anschließend wird nach Ablauf einer vorgegebenen Zeitspanne das Wasserstoffgas aus dem Wasserstoffofen abgelassen, wodurch im Innern des Ofens eine Unterdruck-Atmosphäre erzeugt wird. Gleichzeitig wird auch der Ofen erhitzt, um zu bewirken, dass die hydrierten Anteile der Legierungsblöcke den Wasserstoff desorbieren. Danach wird ein Inertgas in den Ofen eingeleitet, wodurch das resultierende grobe Pulver abgekühlt wird. Bei diesem Abkühlungsverfahren kann zum wirksameren Abkühlen des groben Pulvers mit dem Inertgas im Innern des Wasserstoffofens durch ein Gebläse, das innerhalb des Wasserstoffofens vorgesehen ist, ein Gasstrom erzeugt werden. Zur Erhöhung des Wirkungsgrades dieses Abkühlungs-Verfahrens wird außerdem vorzugsweise ein Behälter (ein Wasserstoff-Pulverisierungsgehäuse) verwendet, wie es vom Anmelder der vorliegenden Anmeldung in dem US-Patent Nr. 6 247 660 B1 beschrieben ist, auf dessen Inhalt hier Bezug genommen wird.\n\n[0016] Bei dem konventionellen Wasserstoff-Pulverisierungsverfahren kann jedoch nicht immer ein vollständig luftdichter Zustand im Innern des Wasserstoffofens aufrechterhalten werden. Daher kann insbesondere während des Zeitraums, während der der Wasserstoffofen im Innern eine Unterdruck-Atmosphäre aufweist, leicht Sauerstoff der Luft in den Wasserstoffofen einströmen. Wenn jedoch Sauerstoff im Innern des Wasserstoffofens vorhanden ist, wird das Seltenerdmetallelement oxidiert, wodurch die magnetischen Eigenschaften der Sintermagneten, die daraus hergestellt werden sollen, beeinträchtigt werden. Aus diesem Grund sollten die Gase, um diese unerwünschte Oxidation zu minimieren, so schnell wie möglich in den Wasserstoffofen eingeführt und aus diesem so schnell wie möglich abgezogen werden. Um die Produktivität zu erhöhen, muss außerdem das grobe Pulver durch den inerten Gasstrom in der kürzest möglichen Zeit abgekühlt werden.\n\n[0017] Bei dem konventionellen Wasserstoff-Pulverisierungsverfahren kann jedoch dann, wenn die Gase innerhalb einer zu kurzen Zeitspanne eingeleitet oder abgezogen werden oder wenn das Inertgas mit einer übermäßig hohen Strömungsgeschwindigkeit in den Wasserstoffofen eingeleitet wird, um die nachteilige Oxidation zu minimieren und/oder die Abkühlungsgeschwindigkeit (oder Produktivität) zu erhöhen, das grobe Pulver, das durch das Wasserstoff-Pulverisierungsverfahren erhalten wird, weggeblasen und im Innern des Wasserstoffofens zerstreut werden. Das zerstreute Pulver besteht meistens aus verhältnismäßig kleinen Teilchen, die das Seltenerdmetallelement in einem ziemlich hohen Prozentsatz enthalten. Wenn diese kleinen Teilchen zerstreut werden, dann ist die Gesamtzusammensetzung des groben Pulvers im Innern des Behälters verschieden von der beabsichtigten oder gewünschten Zusammensetzung. Als Folge davon können die gewünschten magnetischen Eigenschaften nicht erzielt werden. Außerdem können die Pulverteilchen, die verblasen, zerstreut und an verschiedenen Stellen im Innern des Wasserstoffofens zurückgelassen worden sind, oxidiert werden, wenn der Wasserstoffofen geöffnet und der Luft ausgesetzt wird. In diesem Falle können diese oxidierten Legierungspulver-Teilchen mit einem groben Pulver der nächsten Charge während des darauffolgenden Wasserstoff-Pulverisierungsverfahrens gemischt werden. Dann kann ein fehlerhaftes grobes Pulver wie dieses zu einem teilweise unvollständig gesinterten Körper (d. h. zu einer Abnahme der Sinterdichte) führen. Das heißt, durch die Zerstreuung der kleinen Pulverteilchen in dem Wasserstoff-Pulverisierungsverfahren wird die Ausbeute des Materials in nachteiliger Weise vermindert. Außerdem kann dann, wenn ein Teil des Wasserstoffofens aus Kohlenstoff hergestellt ist, die Menge des in dem Seltenerdmetall-Legierungsmaterial enthaltenen Kohlenstoffs (d. h. des groben Pulvers) zunehmen, wodurch möglicherweise die magnetischen Eigenschaften der resultierenden Sintermagnete beeinträchtigt (verschlechtert) werden.\n\n[0018] Wenn andererseits die Gase mit zu niedrigen Geschwindigkeiten eingeleitet oder abgezogen werden oder der Gasstrom in einer zu niedrigen Geschwindigkeit gebildet wird, um eine Zerstreuung der kleinen Pulverteilchen zu bewirken, dauert es viel zu lange, um das erhaltene grobe Pulver abzukühlen, wodurch der Durchsatz herabgesetzt wird. Da außerdem eine Menge Luft (oder Sauerstoff) in den Ofen gelangen kann, können die resultierenden magnetischen Eigenschaften beeinträchtigt (verschlechtert) werden oder im schlimmsten Fall kann sich das Material entzünden.\n\n[0019] Unter anderem sind die Pulverteilchen, die erhalten werden, wenn man einen Block aus einer schnell abgekühlten Legierung einem solchen Wasserstoff-Pulverisierungsverfahren unterzieht, verhältnismäßig fein und leicht oxidierbar und viele von ihnen sind kleine Pulverteilchen, die im Innern des Ofens leicht zerstreut werden können. Außerdem sind diese feinen Pulverteilchen normalerweise im Innern des Behälters ausreichend dicht gepackt und können nicht so leicht mit dem Inertgasstrom belüftet werden. Das heißt, diese feinen Pulverteilchen können nicht ausreichend abgekühlt werden. Um die feinen Pulverteilchen fast ebenso wirksam wie grobe Pulverteilchen abzukühlen, muss daher das Inertgas auch aus diesem Grund mit einer verhältnismäßig hohen Strömungsrate eingeleitet werden. Die vorstehend beschriebenen Probleme, die durch das unbeabsichtigte Zerstreuen der Pulverteilchen hervorgerufen werden, sind somit in einem Wasserstoff-Pulverisierungsverfahren eines Legierungsblockes, der durch ein schnelles Abkühlungsverfahren hergestellt worden ist, besonders signifikant.\n\n[0020] Diese Probleme entstehen nicht nur in dem Wasserstoff-Pulverisierungsverfahren eines Seltenerdmetall-Legierungsblockes, sondern auch bei einem anderen Hydrierungsverfahren (beispielsweise bei dem HDDR-Verfahren, das durchgeführt wird zur Herstellung eines Pulvers für einen anisotrop gebundenen Magneten).\n\nBeschreibung der Erfindung\n\n[0021] Die vorstehend beschriebenen Probleme werden gelöst durch eine Vorrichtung mit den Merkmalen des Anspruchs 1, mit welcher eine Seltenerdmetall-Legierung einem Hydrierungs-Verfahren unterzogen wird, wodurch eine unerwünschte Oxidation des Seltenerdmetallelements ausreichend minimiert wird und die Produktivität signifikant erhöht wird. Bevorzugte Ausführungsformen sind in den abhängigen Ansprüchen angegeben.\n\n[0022] Weitere Merkmale, Elemente, Charakteristika, Stufen und Vorteile der vorliegenden Erfindung gehen aus der nachfolgenden detaillierten Beschreibung bevorzugter Ausführungsformen unter Bezugnahme auf die beiliegenden Zeichnungen hervor.\n\nKurze Beschreibung der Zeichnungen\n\n[0023] Fig. 1 zeigt eine Draufsicht, die in schematischer Form den Aufbau eines Wasserstoffpulverisators 100 gemäß einer bevorzugten Ausführungsform der vorliegenden Erfindung erläutert;\n\n[0024] Fig. 2 zeigt eine Seitenansicht, die in schematischer Form die Struktur des Wasserstoffpulverisators 100, wie er in Fig. 1 dargestellt ist, erläutert;\n\n[0025] Fig. 3 zeigt eine Frontansicht, die in schematischer Form den Aufbau des in Fig. 1 gezeigten Wasserstoffpulverisators 100 erläutert;\n\n[0026] Fig. 4 zeigt eine Draufsicht, die in schematischer Form die Anordnung von Behältern 10 in dem Wasserstoffpulverisator 100 erläutert;\n\n[0027] Fig. 5 zeigt eine Seitenansicht, die in schematischer Form die Anordnung von Behältern 10 in dem Wasserstoffpulverisator 100 erläutert;\n\n[0028] Fig. 6 zeigt eine Frontansicht, die in schematischer Form die Anordnung der Behältern 10 in dem Wasserstoffpulverisator 100 erläutert;\n\n[0029] Fig. 7A zeigt eine perspektivische Ansicht, die einen der Behälter 10, die für die Lagerung von Seltenerdmetall-Legierungsblöcken verwendet werden, in verschiedenen bevorzugten Ausführungsformen der vorliegenden Erfindung erläutert;\n\n[0030] Fig. 7B zeigt eine Seitenansicht des Behälters 10, über dem zusätzlich ein Deckel 18 angeordnet ist, der in der durch den Pfeil A in der Fig. 7A angezeigten Richtung betrachtet wird;\n\n[0031] Fig. 8 zeigt eine ebene Draufsicht, die in schematischer Form einen Aufbau einer Windschutzplatte 50 erläutert, die in dem Wasserstoff-Pulverisator 100 vorgesehen ist; und\n\n[0032] Fig. 9 stellt ein Diagramm dar, das ein beispielhaftes Temperaturprofil für ein Wasserstoff-Pulverisierungsverfahren zeigt.\n\nBeste Art der Durchführung der Erfindung\n\n[0033] Nachstehend werden bevorzugte Ausführungsformen der vorliegenden Erfindung unter Bezugnahme auf die beiliegenden Zeichnungen beschrieben. In den folgenden spezifischen bevorzugten Ausführungsformen wird die vorliegende Erfindung beschrieben unter Bezugnahme auf die Durchführung eines Wasserstoff-Pulverisierungsverfahrens bei einem Seltenerdmetall-Legierungsblock. Die vorliegende Erfindung ist jedoch keineswegs auf die nachstehend beschriebenen erläuternden Ausführungsformen beschränkt.\n\n[0034] Die Fig. 1, Fig. 2 und Fig. 3 zeigen jeweils eine Draufsicht, eine Seitenansicht und eine Frontansicht eines Wasserstoff-Pulverisators (der hier auch als ”Wasserstoffofen” bezeichnet wird) 100 gemäß einer bevorzugten Ausführungsform der vorliegenden Erfindung.\n\n[0035] Der Wasserstoff-Pulverisator 100 umfasst ein Gehäuse 30, eine Gaseinlass-Öffnung 32 und eine Gasauslass-Öffnung 34, ein Gebläse 40 und eine Windschutzplatte 50. Das Gehäuse 30 begrenzt einen inneren Hohlraum 20, in dem mehrere Behälter 10 (vgl. z. B. Fig. 7) enthalten sind, die Seltenerdmetall-Legierungsblöcke enthalten. Ein Wasserstoffgas und ein Inertgas werden durch die Gaseinlass-Öffnung 32 in den inneren Hohlraum 20 eingeleitet und aus dem inneren Hohlraum 20 durch die Gasauslass-Öffnung 34 abgezogen. Das Gebläse 40 wird als Einrichtung verwendet, die vorgesehen ist, um im Innern des inneren Hohlraums 20 einen Gasstrom zu erzeugen. Die Windschutzplatte 50 ist stromaufwärts in Bezug auf den Gasstrom angeordnet, der im Innern des inneren Hohlraums 20 erzeugt worden ist. Die Windschutzplatte 50 ist vorgesehen, um die Strömungsgeschwindigkeit des Gasstromes, der um die obere Öffnung 10a jedes Behälters 10 herum erzeugt worden ist, zu vermindern. Der hier verwendete Ausdruck ”Gasstrom” bezieht sich auf den Strom eines Atmosphärengases, das im Innern des inneren Hohlraums 20 vorhanden ist. Unter dem Gasstrom ist der dynamische Strom eines Gases zu verstehen, unabhängig vom Typ des Gases und unabhängig von der Zusammensetzung des Gases. Es sei darauf hingewiesen, dass der Ausdruck ”Stärke” des Gasstromes sich hier auf die Strömungsgeschwindigkeit oder den Druck des Gasstromes bezieht.\n\n[0036] Wie weiter unten unter Bezugnahme auf die Fig. 8 im Detail beschrieben, umfasst die Windschutzplatte 50 einen Abschirmungs-Abschnitt 50b in einer vertikalen Höhe, die derjenigen der oberen Öffnung 10a eines der Behälter 10 entspricht, die in dem inneren Hohlraum 20 gelagert sind. Die Windschutzplatte 50 umfasst außerdem mindestens eine Öffnung 50a, die einer Seitenfläche 12 des Behälters 10 gegenüberliegt. Die Windschutzplatte 50 vermindert somit die Strömungsgeschwindigkeit des Gasstromes, der um die obere Öffnung 10a des Behälters 10 herum erzeugt worden ist, erhöht jedoch den Gasstrom, der um die Seitenfläche 12 des Behälters 10 herum erzeugt worden ist. Es ist daher möglich, das Verblasen des Pulvers, das in dem Behälter 10 gelagert ist, durch den Gasstrom, der um die obere Öffnung 10a herum erzeugt worden ist, zu verhindern.\n\n[0037] Der Aufbau des Wasserstoffpulverisators 100 wird nachstehend unter Bezugnahme auf die Fig. 1, Fig. 2 und Fig. 3 näher beschrieben.\n\n[0038] Wie in den Fig. 1 und Fig. 2 dargestellt, umfasst der Wasserstoffpulverisator 100 vorzugsweise das Gehäuse 30 und einen Deckel 36, der geöffnet und geschlossen wird, um die Behälter 10 in den inneren Hohlraum 20 des Gehäuses 30 durch eine Öffnung 30a in dem Gehäuse 30 einzuführen und daraus zu entfernen. Der innere Hohlraum 20 für die Aufnahme der Behälter 10 kann durch das Zentrum des Gehäuses 30 definiert sein als ein Bereich, in dem die Temperatur, der Druck des Atmosphärengases und die Strömungsgeschwindigkeit des Gasstromes auf die jeweils vorgegebenen Bereiche eingestellt werden. Das Gehäuse 30 und der Deckel 36 sind vorzugsweise aus einem rostfreien Stahl wie SUS 304L, SUS 316 oder SUS 316L gefertigt, um die Sprödigkeit gegenüber Wasserstoff zu verringern. Außerdem weist das Gehäuse 30 vorzugsweise ein Innenvolumen von etwa 3,0 m3 bis etwa 5,2 m3 auf.\n\n[0039] Im Innern des Gehäuses 30 sind ein Rohr 22 und vordere und hintere Abdeckungen (Deckel) 24a und 24b vorgesehen. Das Rohr 22 kann aus einem Wärmeisolator (z. B. Kohlenstoff) hergestellt sein und vordere und hintere Öffnungen 22a und 22b aufweisen. Die vordere Öffnung 22a ist hinter der Frontabdeckung 24a angeordnet, während die hintere Öffnung 22b hinter der hinteren Abdeckung 24b angeordnet ist. Die vorderen und hinteren Abdeckungen 24a und 24b sind vorzugsweise aus dem gleichen Wärmeisolator wie das Rohr 22 hergestellt und sie werden geöffnet und geschlossen durch Öffnungs/Schließ-Zylinder 25a bzw. 25b. In der Fig. 1 sind die vorderen und hinteren Abdeckung 24a und 24b oberhalb der strichpunktierten Linie (Mittellinie) im geschlossenen Zustand und unterhalb der strichpunktierten Linie im geöffneten Zustand dargestellt.\n\n[0040] Wenn das Rohr 22 und die vorderen und hinteren Abdeckung 24a und 24b geschlossen sind, bilden das Rohr 22 und die vorderen und hinteren Öffnungen 24a und 24b einen hermetisch verschlossenen Hohlraum, in dem eine Heizeinrichtung 26 vorgesehen ist, um den inneren Hohlraum 20 zu erhitzen. Wie in Fig. 3 dargestellt, ist diese Heizeinrichtung 26 um den gesamten inneren Umfang des Rohres 22 herum angeordnet, um den inneren Hohlraum 20 möglichst gleichmäßig zu erhitzen. Die Heizeinrichtung 26 kann aus Kohlenstoffgraphit bestehen, der eine gegenüber Wasserstoffgas ausreichende Beständigkeit aufweist. Wie ebenfalls in der Fig. 3 gezeigt, sind die oberen und unteren Thermoelemente 28a und 28b vorgesehen, um die Temperatur im inneren Hohlraum 20 zu überwachen. Durch Einstellung der Menge der aus den Elektroden 26a der Heizeinrichtung 26 entsprechend den Output-Signalen der Thermoelemente 28a und 28b zugeführten elektrischen Energie ist die Temperatur im Innern des inneren Hohlraums 20 steuerbar. Es sei darauf hingewiesen, dass die Elektroden 26a auch als Elemente zum Tragen der Heizeinrichtung 26 darauf dienen.\n\n[0041] Die Behälter 10, welche die Seltenerdmetall-Legierungsblöcke enthalten, sind auf einem Gestellt 15 befestigt (vgl. z. B. Fig. 4), das dann in den inneren Hohlraum 20 eingeführt wird. Der Wasserstoffpulverisator 100 umfasst Bodenführungsrollen 26, die den Boden des Gestells 15 tragen und auf denen das Gestellt rollt, wie in Fig. 2 dargestellt, und er umfasst außerdem Seitenführungen 64, wie in Fig. 1 dargestellt. Durch Verwendung dieser Rollen 62 und Führungen 64 kann das Gestell 15 zu einer vorgegebenen Position im Innern des inneren Hohlraums 20 transportiert werden. Das heißt, der ”innere Hohlraum” 20 ist der Hohlraum, der von der Heizeinrichtung 26 umgeben ist und in dem das Gestell 15, wie vorstehend beschrieben, abgestellt (gelagert) wird. Gegebenenfalls können mehrere Gestelle 15 in diesen Wasserstoffpulverisator 100 eingeführt und gleichzeitig dem Wasserstoffpulverisierungs-Verfahren unterworfen werden. Die Anzahl der Behälter 10, die auf jedem Gestell 15 befestigt sind, und die Größe jedes Gestells 15 können in geeigneter Weise unter Berücksichtigung des Arbeitswirkungsgrades, der erzielt werden soll, geändert werden. Bei dieser bevorzugten Ausführungsform sind vier Schichten von drei Behältern 10 vorzugsweise auf jedem der drei Gestelle 15 befestigt und dann werden die drei Gestelle 15 in den inneren Hohlraum 20 nacheinander eingeführt, wie in den Fig. 4, Fig. 5 und Fig. 6 dargestellt. Das heißt, zahlreiche Seltenerdmetall-Legierungsblöcke, die in den insgesamt 36 Behältern 10 enthalten sind, werden gleichzeitig dem Wasserstoffpulverisierungs-Verfahren unterworfen.\n\n[0042] Durch die Gaseinlass-Öffnung 32 des Gehäuses 30 werden ein Wasserstoffgas und ein Inertgas (z. B. Ar- oder He-Gas) in das Gehäuse 30 eingeleitet. Die Gaseinlass-Öffnung 32 steht mit einem Kühler (nicht dargestellt) in Verbindung, der die Temperaturen der dem Gehäuse 30 zugeführten Gase steuert. Die eingeleiteten Gase werden von einer Stufe des Wasserstoffpulverisierungs-Verfahrens zu einer anderen geändert beispielsweise durch Betätigung von Ventilen (nicht dargestellt). Andererseits steht die Gasauslass-Öffnung 34 mit einer Abzugs-Einheit (nicht dargestellt), beispielsweise einer Roots-Pumpe oder einer hydraulischen Pumpe, in Verbindung, sodass die Gase durch die Gasauslass-Öffnung 34 aus dem Gehäuse 30 abgezogen werden. Diese Gaseinleitungs- und Gasabzugs-Elemente können so angeordnet sein, wie in der offengelegten japanische Patentpublikation Nr. 2000-303 107 beschrieben (die der US-Patentanmeldung Nr. 09/503 738 entspricht, auf deren Inhalt hier Bezug genommen wird). Der Wasserstoffpulverisator 100 gemäß dieser bevorzugten Ausführungsform ist vorzugsweise ein solcher vom Batch-Typ. Die Effekte der vorliegenden Erfindung werden aber auch erzielt durch Bereitstellung einer Windschutzplatte für eine Vorrichtung vom kontinuierlichen Typ (beispielsweise einem kontinuierlichen Vakuumofen der FS-Reihe, hergestellt von der Firma ULVAC Corporation).\n\n[0043] Das hier verwendete ”Inertgas” kann reaktionsfähige Gase (z. B. Sauerstoffgas und/oder Stickstoffgas) in sehr geringen Prozentsätzen enthalten. Die Prozentsätze des Sauerstoffgases und des Stickstoffgases, die in dem ”Inertgas” enthalten sind, betragen jedoch vorzugsweise nicht mehr als etwa 5 Mol-% bzw. nicht mehr als etwa 20 Mol-% und besonders bevorzugt etwa 1 Mol-% oder weniger bzw. etwa 4 Mol-% oder weniger.\n\n[0044] Die Art und der Druck des Atmosphärengases, das im Innern des Gehäuses 30 erzeugt wird, sind steuerbar entsprechend einem vorgegebenen Programm durch Einstellung der Strömungsgeschwindigkeiten der Gase, die in das Gehäuse 30 eingeleitet und aus diesem abgezogen werden sollen. Außerdem ist die Temperatur des im Innern des Wasserstoffpulverisators 100 erzeugten Atmosphärengases steuerbar durch Betätigung der Heizeinrichtung 26 entsprechend einem vorher festgelegten Temperaturprofil, während gleichzeitig das Output-Signal eines Temperatursensors, der im Innern des Ofens vorgesehen ist, überwacht wird. Die Strömungsgeschwindigkeit des Atmosphärengases wird gesteuert durch das Gebläse 40 und die Temperatur des Atmosphärengases kann durch einen Kühler (durch Kühlrohre) 42 herabgesetzt werden, die zwischen dem Gebläse 40 und dem inneren Hohlraum 20 angeordnet sind. Außerdem kann die Temperatur des Inertgases auch gesteuert werden durch den Kühler (nicht dargestellt), der mit der Gaseinlassöffnung 32 in Verbindung steht. Diese Temperaturkontrollen können mittels einer Kontrolleinrichtung (nicht dargestellt) durchgeführt werden.\n\n[0045] Durch das Gebläse 40 wird ein Gasstrom erzeugt, wie er durch die Pfeile unterhalb der Mittellinie in der Fig. 1 angezeigt ist. Dies ist darauf zurückzuführen, dass das Gas, das durch die Gaseinlass-Öffnung 32 (vgl. Fig', '技术领域\n\n  [0001] 稀土合金的装置技术领域本发明涉及一种可以有效地用于对稀土合金的铸锭进行氢化处理例如氢粉碎处理的装置。\n\n 技术背景\n\n  [0002] 从DE 100 07 449 A1中已知一种通用设备。 该现有技术公开了一种用于对稀土合金材料进行氢粉碎工艺的设备。 该设备包括可气密密封的氢炉,该氢炉具有用于用稀土合金材料加载和卸载氢炉的开口。 此外,该设备包括用于将惰性气体引入氢气炉的设备。\n\n  [0003]  DE 24 48 714 A1公开了一种用于处理制品的方法,该制品被布置在设置在第二容器中的第一容器内。 第一容器的内部经由开口连接至第二容器。 在抽空第二容器之后,将压缩气体从外部源供应到第一容器中,使得第一容器的内部压力高于第二容器的内部压力。 这导致气体从第一容器流入第二容器。 为了使从第一容器到第二容器的连续气体流,在第一容器中提供连续的气体供应。\n\n  [0004]  EP 0 992 309 A2公开了一种用于氢粉碎稀土材料的方法。 在第一步骤中,将稀土金属材料放入容器中,中空管通过该容器连接容器的两个侧面。 然后,使用氢气将稀土材料粉碎。\n\n  [0005] 通过将磁性合金粉碎成合金粉末,压制该合金粉末以制造生坯(预压坯),烧结该生坯,然后对烧结体进行时效处理,来制造稀土类烧结磁体。 目前广泛用于各种应用领域的稀土金属烧结磁体包括sa钴(Sm-Co)型磁体和钕铁硼型磁体(以下称为“磁体”)。  RT-(M)-B型”,通常也称为“ R-Fe-B型磁铁”。 其中,R-T-(M)-B型磁体越来越多地用于各种类型的电子设备中。 这是因为R-T(M)-B型磁铁的最大能量乘积(BH)max 它比其他各种磁体都高,但相对便宜。\n\n  [0006] 在钕铁硼类型磁体的通式RT-(M)-B中,R代表包括钇(Y)的稀土金属元素中的至少一种,通常代表钕(Nd),T代表任一铁(Fe  )单独或代表Fe和过渡金属元素的混合物,M代表至少一种添加剂(添加物),B代表单独的硼或代表硼和碳的混合物。 特别地,T优选为单独的Fe或Fe与选自Ni和Co中的至少一种的混合物。在后一种情况下,Fe优选构成T的约50原子%以上。 添加剂(添加物)M优选表示选自Al,Ti,Cu,V,Cr,Ni,Ga,Zr,Nb,Mn,Mo,In,Sn,Hf,以及N中的至少一种元素。  Ta和W,并且优选为整个磁体的约1质量%或更少。 当B是硼和碳的混合物时,硼优选占混合物的约50原子百分比或更多。 适用于本发明的各种优选实施方式的R-T-(M)-B型烧结磁体例如在美国专利第4,770,723号和第4,792,368号中进行了描述,其内容通过引用并入本文。 \n\n[0007] 在现有技术中,已经通过使用铸锭法生产了R-T-(M)-B型合金作为用于这种磁体的材料。 在铸锭过程中,通常通过感应加热法将稀土金属,电解铁和铁硼合金作为各自的起始原料熔化,然后将得到的熔体在铸模中相对缓慢地冷却,从而获得合金铸锭。\n\n  [0008] 近来,在现有技术中,诸如带式浇铸法或离心式浇铸法之类的快速冷却方法受到了很多关注。 在快速冷却过程中,使熔融合金与单淬火辊或双淬火辊,旋转淬火盘或旋转圆柱铸模的外表面或内表面接触并相对快速地冷却和固化,从而使熔融合金迅速固化成一个 制成的合金比合金锭薄。 以这种方式生产的快速凝固的合金在下文中被称为“合金薄片”。 使用这种快速冷却工艺生产的合金薄片的厚度通常为约0.03至约10mm。 在快速冷却过程中,熔融合金从与淬火辊表面接触的表面开始凝固。 熔融合金的该表面在下文中被称为“辊接触表面”。 在快速冷却过程中,柱状(柱状)晶体从辊接触​​表面沿厚度方向生长。 结果,使用流延铸造法或其他快速冷却方法制造的快速凝固的合金具有晶体R 2的结构。  Fe 14 包括B相和R富相。 晶体R 2  Fe 14  B相通常具有约0.1至约100μm的量级的短轴和约5至约500μm的尺寸的长轴。 另一方面,富含R的相是在结晶R 2之间的晶界中,所述富含R的相是包含相对较高浓度的稀土元素R的非磁性相。  Fe 14  B相分散。\n\n  [0009] 与通过常规铸锭法或压铸法生产的合金(以下称为“合金”)相比,快速固化的合金在较短的时间内(即冷却速率约为10℃)进行了冷却和固化。  2°C / s至约10 4°C / s)。 因此,快速凝固的合金具有较细的组织(较细的织构)和较小的平均晶粒尺寸。 另外,在快速凝固的合金中,晶界具有较大的面积(面积),并且富R相广泛且稀疏地分散在晶界中。 因此,快速凝固的合金也具有富R相的优异的分散性(分布)。 由于快速凝固的合金具有上述优点,因此可以由快速凝固的合金制造具有优异磁性能的磁体。 \n\n[0010] 从现有技术中还已知一种被称为“ Ca还原过程(或称为还原-扩散过程)”的替代合金生产过程。 该方法包括以下步骤:将钙金属(Ca)和氯化钙(CaCl)以预定比例添加到至少一种稀土金属氧化物,铁粉,纯硼粉和选自铁硼硼粉和氧化硼中的至少一种的混合物中,或者添加到以下混合物中: 含有预定比例的合金粉末或这些构成元素的混合氧化物,将所得混合物在惰性气氛中进行还原-扩散处理,将所得反应物稀释成浆料,然后用水进行处理。 以这种方式,可以获得R-T-(M)-B型合金固体。\n\n  [0011] 应当注意,以下将每个小的固态合金锭称为“合金锭”。  “合金锭”可以采用各种形式的固体合金,而不仅可以是通过缓慢或快速冷却材料合金(例如,使用常规锭铸造工艺制造的合金锭)的熔体而制成的凝固合金, 或通过使用淬火法(例如带钢铸造法)生产的合金薄片),但也包括通过使用Ca还原法生产的固态合金。\n\n  [0012] 通过执行以下步骤来获得待压制的合金粉末,该步骤包括通过使用例如氢粉碎工艺和/或各种机械研磨工艺中的任何一种(例如,使用弹簧磨机,高性能磨机)将这些形状的合金锭粗粉碎。 或使用圆盘研磨机),并通过使用例如喷射式研磨机的干磨法将所得的粗粉(平均粒径为约10至约1000μm)精细地粉碎。 为了获得足够的磁性能,被压制的合金粉末优选具有约1.5至约7μm的平均粒径。 应当注意,除非另有说明,否则本文所用的术语“粉末的平均粒径”是指质量中值直径(MMD)。 粗粉也可以通过使用球磨机或磨碎机细粉碎。\n\n  [0013] 氢粉碎法是利用以下现象的粉碎法:当暴露于氢气气氛时,由于合金材料的体积膨胀,在稀土合金材料(通常为合金锭)中产生非常小的裂纹。 这种膨胀是由合金材料中所含稀土元素的氢化引起的。 与机械研磨工艺相比,氢粉碎工艺可提高生产率,并减少后续加工和制造步骤中稀土元素的氧化。 当将快速凝固的合金用作原料合金锭时,可以通过氢粉碎法将合金锭粗粉碎至约1mm以下(通常为平均粒径约10至约1000μm)。  。 另一方面,当原料合金锭为通过还原扩散法制造的合金锭或固态合金时,所得的粗粉的平均粒径为约1cm。\n\n  [0014] 在现有技术中,RT-(M)-B型合金的氢粉碎通常通过用稀土材料合金锭填充由诸如SUS 304之类的不锈钢制成的容器然后进行氢吸收和氢脱附来进行。  -在氢气炉内对合金块进行处理。 \n\n[0015] 特别地,首先将储存在容器中的合金锭引入氢气炉中,在氢气炉中产生减压气氛。 然后将氢气引入氢气炉,使合金锭捕获(或吸收)氢气。 在该氢吸留(或吸收)过程中,合金锭中包含的稀土元素被氢化。 合金锭的氢化部分在体积上膨胀,从而在其中产生裂纹。 然后,在经过预定时间之后,从氢气炉释放氢气,从而在炉内产生负压气氛。 同时,还加热炉,以使合金块的氢化部分解吸氢。 之后,将惰性气体引入炉中,由此冷却所得的粗粉。 在该冷却方法中,为了用氢炉内部的惰性气体更有效地冷却粗粉,可以通过设置在氢炉内部的风扇来产生气流。 为了提高该冷却过程的效率,还优选使用如本申请的受让人在美国专利No.6,247,660 B1中描述的容器(氢粉碎箱),其内容通过引用并入本文。\n\n  [0016] 然而,在常规的氢粉碎方法中,不能总是在氢炉内部保持完全气密的状态。 因此,特别是在氢炉内部为负压气氛的期间,空气中的氧气容易流入氢炉。 但是,如果氢炉内存在氧气,则稀土元素被氧化,从而使由其制成的烧结磁体的磁性能劣化。 因此,为了使这种不希望的氧化最小化,应该将气体尽快地引入到氢炉中或从氢炉中抽出。 为了提高生产率,还必须在尽可能短的时间内通过惰性气流冷却粗粉。\n\n  [0017] 然而,在常规的氢粉碎过程中,如果在太短的时间内引入或抽出气体,或者如果惰性气体以过高的流速引入到氢炉中,以最大程度地减少不利的氧化和/或冷却速率(或 生产率),将通过氢粉碎过程获得的粗粉吹散并散布在氢炉内。 散布的粉末主要由相对较小的颗粒组成,这些颗粒包含相当高百分比的稀土元素。 当这些小颗粒分散时,容器内部的粗粉的总体组成将与预期或期望的组成不同。 结果,不能获得期望的磁性能。 另外,当氢炉打开并暴露于空气中时,已经吹散,散布并留在氢炉内部各个地方的粉末颗粒可能被氧化。 在这种情况下,这些氧化的合金粉末颗粒可以在随后的氢粉碎过程中与下一批的粗粉末混合。 然后,像这样的有缺陷的粗粉可能导致烧结体的部分不完全(即,烧结密度的降低)。 即,在氢粉碎过程中细粉颗粒的散布不利地降低了材料的产率。 另外,如果氢炉的一部分由碳制成,则稀土合金材料中所含的碳(即粗粉)的量可能增加,从而可能导致所得烧结磁体的磁性能劣化。 \n\n[0018] 另一方面,如果以太低的速度引入或排出气体,或者以太低的速度形成气流以致使小粉末颗粒分散,那么冷却所得的粗粉将花费很长时间,从而降低了产量。  。 另外,由于大量的空气(或氧气)会进入熔炉,因此,可能会削弱(变差)所产生的磁性能,或者在最坏的情况下,材料会着火。\n\n  [0019] 其中,通过对快速冷却的合金的铸锭进行这种氢粉碎处理而获得的粉末颗粒相对细并且易于氧化,并且它们中的许多是小的粉末颗粒,其易于分散在炉内。 另外,这些细粉颗粒通常充分密实地包装在容器内部,并且不容易用惰性气体流充气。 即,这些细粉颗粒不能充分冷却。 为了使细粉颗粒几乎与粗粉颗粒一样有效地冷却,因此,出于这个原因,还必须以较高的流速引入惰性气体。 因此,由粉末颗粒的无意飞散引起的上述问题在通过快速冷却工艺制造的合金铸锭的氢粉碎工艺中特别重要。\n\n  [0020] 这些问题不仅在稀土合金锭的氢粉碎过程中,而且在另一氢化过程中(例如,HDDR过程被产生以生产用于各向异性结合的磁体的粉末)也出现。\n\n 发明内容\n\n  [0021] 通过具有权利要求1的特征的设备解决了上述问题,通过该设备对稀土合金进行氢化处理,从而使稀土元素的不期望的氧化充分地最小化,并且生产率显着提高。 在从属权利要求中给出了优选实施例。\n\n  [0022] 通过以下参考附图对优选实施例的详细描述,本发明的其他特征,要素,特征,阶段和优点将变得明显。\n\n 附图的简要说明\n\n  [0023]  图。 图1是示意性地表示氢粉碎机100的结构的平面图。 根据本发明的优选实施例进行说明;\n\n  [0024]   图。 图2为示意性地表示氢粉碎机的结构的侧视图。 就像他在 图。中所做的那样。 图1被说明,解释;\n\n  [0025]   图。 图3以示意形式示出了 图。中的结构的正视图。 图1显示氢粉碎机100 解释\n\n  [0026]   图。 图4是以示意形式示出容器10的布置的平面图。 在氢气粉碎机100中。 解释\n\n  [0027]   图。 图5是示意性地表示容器10的配置的侧视图。 在氢气粉碎机100中。 解释\n\n  [0028]   图。 图6是示意性地表示容器10的配置的主视图。 在氢气粉碎机100中。 解释\n\n  [0029]   图。 图7A是示出容器10之一的透视图。 在本发明的各种优选实施方案中,其用于存储稀土合金锭。\n\n  [0030]   图。 图7B示出了容器10的侧视图。  ,其上的封面18 排列,由 图。中的箭头A指示。 观看图7A; \n\n[0031]   图。 图8是示意性地表示挡风玻璃50的结构的平面图。 解释说是在氢粉碎机中100 提供; 和\n\n  [0032]   图。 图9是示出用于氢粉碎过程的示例性温度曲线的图。\n\n 实施发明的最佳方式\n\n  [0033] 下面将参考附图描述本发明的优选实施例。 在以下具体的优选实施方式中,将参考对稀土合金锭进行氢粉碎工艺来描述本发明。 然而,本发明决不限于以下描述的说明性实施例。\n\n  [0034]   图。  1, 图。  2和 图。 图3示出了氢粉碎机(在这里也称为“氢炉”)的平面图,侧视图和正视图。 根据本发明的优选实施例。\n\n  [0035] 氢气粉碎机100 包括外壳30  ,进气口32 和出气口34  ,鼓风机40 和挡风玻璃50  。 房屋30 界定内部空腔20  ,其中几个容器10  (例如,参见 图。7)包含稀土合金块。 氢气和惰性气体通过进气口32引入。 进入内腔20 并从内腔引入20 通过出气口开口34 扣除。 鼓风机40 用作提供给内腔20内部的设备。 产生气流。 防风板50 相对于内腔20内部的气流位于上游。 已生成。 防风罩50 提供“ A”来确定围绕上部开口流动的气流的流量。 每个容器的10 已经产生减少。 如本文所用,术语“气流”是指在内腔内部流动的大气的气流。 可用。 气体流应理解为气体的动态流,而不管气体的类型和气体的成分如何。 应当注意,术语气流的“强度”在此是指气流的流速或压力。\n\n  [0036] 如下参考 图。 参照图8详细描述,防风板包括50 屏蔽段 50b 垂直高度等于上部开口 10a的高度。  10容器之一。 对应于内腔20中的那个。 被存储。 防风板50 还包括至少一个开口 50a 对应于侧面12 容器10的容器。 对面。 挡风玻璃50 因此降低了上部开口周围的气流的流量 10a 容器10的容器。 周围会产生气体,但是会增加侧面12周围的气流。 容器10的容器。 已经产生了。 因此可以防止容器中的粉末10 通过围绕上开口 10a的气流来存储。 已经产生来防止。\n\n  [0037] 氢气粉碎机的结构100 下面将参考 图。进行讨论。  1, 图。  2和 图。 图3更详细地描述。 \n\n[0038] 如 图。中所示。  1和 图。 如图2所示,氢粉碎机包括100 最好是外壳30 和盖子36 打开和关闭容器10的容器。 进入内腔20 房屋30 通过 30a开头。 在30的情况下。 引入并从中删除。 内腔20 用于容纳容器10 可以通过外壳的中心30 将“温度”定义为将温度,大气压力和气流的流速设置为各自的预定范围的范围。 房屋30 和封面36 它们优选由不锈钢制成,例如SUS  304公升  ,SUS 316 或SUS  316升 制造以减少对氢的脆性。 外壳还具有30 优选地,内部体积为约3.0m 3 高达5.2 m 3 上。\n\n  [0039] 外壳内30 是22管道。 和前后盖(盖) 24a 和 24b 预期的。 管道22 可以由绝热材料(例如碳)制成,并且前后开口 22a 和 22b 展示。 前开口 22a 位于封面 24a的后面。 同时在后部开口 22b排列。 后盖 24b后面。 被安排。 前后盖板 24a 和 24b 最好由与22管相同的绝热材料制成。 然后通过打开/关闭气缸 25a打开和关闭它们。 或 25b  。 在 图。中。  1是前盖和后盖 24a 和 24b 在关闭状态下虚线(中心线)上方和在打开状态下虚线下方显示。\n\n  [0040] 当管道22 以及前盖和后盖 24a 和 24b 闭合,形成管道22 和前后开口 24a 和 24b 一个密封的空腔,其中的加热器26 提供给内腔20 加热。 如 图。  3,此加热器为26 围绕管道的整个内圆周22 围绕内腔排列20 尽可能均匀地加热。 加热器26 可以由具有足够耐氢气性的碳石墨制成。 同样在 图。中。  3,顶部和底部热电偶是 28a 和 28b 提供给内腔中的温度20 监视。 通过调整电极的数量 26a 加热器26 根据热电偶 28a的输出信号。 和 28b 所供应的电能是内腔内部的温度20 可控的 应当注意,电极 26a 也可作为携带加热装置26的元件。 服务于它。 \n\n[0041] 容器10 包含稀土合金铸锭的机架上15 附件(例如 图。4),然后将其插入内腔20 介绍。 氢气粉碎机100 包括地板导辊26 那就是机架15的底部。 并在框架上滚动,如 图。  2,并且还包括侧导板64  ,如 图。中所示。 显示了1个。 通过使用这些角色62 和导游64 框架15 到内部空腔内的预定位置20 被运输。 也就是说,“内腔” 20 是由加热器26创建的空腔。 被包围,并且框架15 如上所述,被停放(存储)。 如有必要,几个机架15 放入此氢制粉机100 并同时进行氢气粉碎过程。 容器数10 在每个15机架上。 以及每个机架的大小15 考虑到要实现的工作效率,可以适当更改。 在该优选实施例中,三个容器的四层是10 最好在三个机架中的每个机架上15 然后附加三个框架15 进入内腔20 一个接一个地介绍,例如 图。  4, 图。  5和 图。 所示为6。 这意味着,总共36个容器10中包含许多稀土合金块。 同时进行氢气粉碎过程。\n\n  [0042] 通过进气口32 房屋30 将氢气和惰性气体(例如Ar或He气体)引入壳体30 启动。 进气口32 连接到冷却器(未显示),该冷却器控制壳体30的温度。 控制供应的气体。 引入的气体例如通过操作阀(未示出)从氢粉碎过程的一个阶段改变到另一阶段。 另一方面,出气口34竖立。 与抽气单元(未显示)连接,例如罗茨泵或液压泵,以便气体通过出气口34 从房屋30 减去。 这些气体入口和出口构件可以如日本特开2000-303 107号公报(与美国专利申请09/503 738号相对应)中所述的那样布置,其内容通过引用并入本文。 氢气粉碎机100 根据该优选实施例,它优选地是间歇式的。 但是,通过提供一种用于连续型设备(例如,ULVAC Corporation制造的FS系列连续真空炉)的防风罩,也可以实现本发明的效果。\n\n  [0043] 此处使用的“惰性气体”可以以非常小的百分比包含反应性气体(例如氧气和/或氮气)。 然而,“惰性气体”中所含的氧气和氮气的百分比分别优选地不大于约5mol%和不大于约20mol%,并且更优选地为约1mol%或更少。 约4摩尔%或更少。 \n\n[0044] 壳体内的大气气体的类型和压力30 可以根据预设程序通过调节进入壳体的气体的流量30进行控制。 发起并退出。 另外,氢粉碎机内部的温度为100 通过操作加热装置26可控制产生的大气气体。 根据预定的温度曲线,同时监测设置在炉内的温度传感器的输出信号。 大气的流量由风扇40控制。 大气温度可通过冷却器(通过冷却管)42确定。 在风扇40之间。 和内腔20 被安排。 另外,惰性气体的温度也可以通过连接到进气口32的冷却器(未显示)进行控制。 已连接。 这些温度控制可以通过控制装置(未示出)来进行。\n\n  [0045] 通过鼓风机40 如 图。中心线下方的箭头所示,将产生气流。 显示1。 这是因为气体流经进气口32  (参见 图。2)插入外壳30之间的空间。 和管道22 已经引入,通过管道22在通道中流动。  ,封面和封底 24a 和 24b 是有限的,并且在穿过壁 44a的通道中流动。 和 44b 是有限的。\n\n  [0046] 封面36 氢粉粉碎机的100 至少在氢粉化过程中,关闭壳体,从而使壳体内部的空腔30 在进行氢粉碎过程时,将其保持在完全密封的状态。 而容器10  (即,机架15)放入此氢气粉碎机10 从此装载或卸载,封面36 氢粉粉碎机100 由驱动机构(未显示)抬起,打开 30a 氢制粉机的100 被暴露。   图。 图1说明盖36的状态。 封闭的是。 自住房30 和封面36 具有足够高的机械强度,足以承受炉子内部的超压和负压条件,这种氢粉碎机100可以进行各种类型的加氢处理。 安全地进行。\n\n  [0047] 在该优选实施例中,一系列容器是10  ,例如,在机架15上,每个尺寸大约为300 mm×150 mm×500 mm。 然后,如 图。所示。  4, 图。  5和 图。  6,进入内腔20 被介绍。   图。  4, 图。  5和 图。 图6分别以平面图,侧视图和正视图以示意形式示出了容器10的布置。 解释内部空腔的内部20 被存储。 这些容器10 在架子上的15 容器在水平方向和垂直方向上都相互隔开一定距离,以便相邻容器之间的气体10 可以轻松流动。 \n\n[0048] 容器10 和机架15 它们优选由不锈钢制成,例如SUS  304公升 产生的产品,其对氢的脆性低。 容器10 通常,它们是盒状的,并且优选地是相对较浅的(例如,约10cm或更深),以便能够均匀地水合稀土合金锭。 即使容器10 代表相对较深的盒子,合金块最好放在10的容器中。 填充,使它们从表面开始的深度约为10厘米。 这是通过将合金锭的最大可能表面积(最好是总表面积)均匀地暴露于氢气氛中来实现的。 这样做的原因是,如果使用扁平容器10 由于填充了许多合金锭,可能很难对这些合金锭进行均匀的氢粉碎过程。 每个机架15 用于容纳容器10 优选地具有足够的机械强度,并且优选地放置容器的各个侧面10 容器底部或侧面的自由表面10 与大气中的气体直接进行热交换,以尽可能地最大化。\n\n  [0049] 容器10 稀土合金锭的储存优选为 图。中所述的一种。 参见图7A,并在美国专利号6,247,660 B1中进行了描述,其内容通过引用合并于此。 \n\n[0050] 正文11 容器10的容器。 最好是一个基本上矩形的平行六面体盒子(例如,具有大约500mm×185mm×85mm的尺寸),该盒子具有一个细长的顶部开口 10a 以提高批量生产率。 如 图。 图7A大约位于主体的中心11 细分15 预期的。 为了增加热传递和散热效果,在较短的侧面上设置了12 容器主体的11 三个空心管14大约在其垂直高度的中间。 附连件的外径为约12mm,内径为约9mm。 如 图。 在图7A中,这三个管道特别地延伸14 由15细分。 沿容器主体的长度11 并且其开放端 14a 打开相应的开口 12b 较短的侧面12 容器10的容器。  。 还有另外六个中空管14 在较长的侧面12上的外径约为10毫米,内径约为8毫米。 容器主体的11 连接,使其在三个中空管14上延伸。 在较短的侧面之间12 延伸。 特别是,这六个管道通向14  ,如 图。中所示。 如图7A所示,其开口端 14a 进入相应的开口 12b 在较长的侧面12 容器10的容器。  。 也就是说,对于 图。中的那个。 在图7A中,这九个空心导管中的每一个都具有14 内表面 14a 它基本上与相关的侧面12形成一个单元。  。 应该注意的是,空心管的开口端和内表面在此用相同的附图标记 14a表示。 被指定。 它们还会导致 图。 图7A所示的优选实施例示出了开口端 14a 的空心管14 基本上在开口 12b中。 侧面的12 容器10的容器。  。 或者,末端可以是 14a 的中空管14 通过页面表面12 容器10的容器。 突出。 无论如何,空气应通过开口端 14a 放入14的空心管中。 可以进入。 应当注意,侧面12 容器10的容器。 它们基本上垂直于在内部空腔中流动的气流的方向20 产生热量的流动(即,在较长侧面12的方向上。在 图。7中说明的优选实施例中)对热量的传递和散热起很大作用。 因此,空心管应14 至少在这些较长的侧面之间12 可以提供,但它们不必位于其他较短的侧面12之间。 存在。 \n\n[0051] 增加容器的机械强度10 最好是侧面12的上边缘。 容器主体的11 带有加固带13  ,最好是z。  B.由铜组成。 此外,容器主体的底部为11 最好从增强的下框架17中获得。 环绕。 容器主体11 喜爱空心管14的人。  ,细分15 和加固的下框架17 它们也优选地由不锈钢制成,例如。  B.SUS  304公升 所生产的产品具有所需的对氢的低脆性。 为了获得更高的导热率,这些元件优选地由导热率约为2.35W / cm×deg或更高的材料制成(例如,由铜或铝合金制成)。\n\n  [0052] 这些容器10 在机架上15  ,如 图。中所示。  4, 图。  5和 图。 所示为6。 从这些图中可以看出,这些容器是10 排列,使其较长的侧面12 面对前方d。  H。 较长的侧面12 基本上垂直于空腔内部流动的气流的方向延伸。 如 图。中的箭头所示,已生成流。 显示5。\n\n  [0053] 防风板50 在框架15的前面。   30a的开头。 最接近,排列。 挡风玻璃上的气体50 发生过,容器周围流过10 放在架子上15 被附上。\n\n  [0054] 下图显示了挡风玻璃50的位置之间的关系。 和容器10 在内腔20中。 参照 图。存储。  8个描述。\n\n  [0055] 如 图。中所示。 如图8所示,防风罩包括50 开口 50a 和屏蔽部分 50b  (即挡风玻璃50的部分。与开口 50a分开的部分)。 在容器周围产生气流10 在机架15上以多层(在此优选实施例中为四层)周围。 排列,开口是 50a 布置在与这些层相对应的各个垂直高度处。 如 图。中所示。 如图8所示,最好有几个开口 50a 为每个级别提供侧边12 容器10 在每个班次中尽可能均匀地暴露在气流中。\n\n  [0056] 确定围绕上开口的气流的流量 10a 每个容器10的数量。 已经生成,挡风玻璃50 还优选地布置成使得其开口 50a 上部开口 10a 容器10 不面对面。 特别是,挡风玻璃是50 排列应使每个开口的上端 50a 布置在垂直高度上的垂直高度基本上等于或低于上开口 10a的高度。 分配的容器10的数量。 并且每个开口的下端 50a 容器的垂直高度等于或高于相关容器的底部10  。 \n\n[0057] 防风罩通常为50 这样安排,使每个开口 50a 侧面的垂直中心12相同。 关联容器10的容器。 对面。 如果容器10 中空管15 它在其侧面12之间延伸。 扩展挡风玻璃50的挡风玻璃。 相反,则开放(空心)端为 14a 每个中空管14 最好在其关联的开口 50a的上下两端之间。 安排。 也就是说,如 图。所示。 在图8中,空心(开口)端是 14a 任何14空心管。 容器10的容器。 优选地通过其相关开口 50a的上下两端位于垂直宽度W1内。 被定义为。 当空心端 14a 任何14空心管。 在侧面的垂直高度中间12 容器10的容器。 布置宽度W1优选约为侧面12的垂直宽度V1的三分之一或更小。  ,尤其是垂直宽度V1的大约四分之一或更小。 通常,每个开口顶部之间的垂直高度差为 50a 和顶部开口 10a 与其关联的容器10 最好大约等于或小于开口 50a的垂直宽度W1。  。 如果该高度差过小,则在开口10a周围产生的气流的流速过高。 然后合金粉末颗粒从容器中的不希望有的散布10 无法充分预防。\n\n  [0058] 另一方面,每个开口的水平宽度W2允许为 50a 大小不足以容纳其所有关联的空心端 14a 包括。 也就是说,某些空心端 14a 不得为 50a之一。 对面。 而是必须定义宽度W2,以使气流在其关联的容器10中基本均匀。 可以提供足够的气体,并且要有足够的气流通过其相关的中空管14 可以流动。\n\n  [0059] 如上所述,氢粉碎机包括100 在该优选实施例中,防风板50  ,屏蔽部分 50b 设置在与上开口 10a对应的垂直高度上。 容器10 其中存储了稀土合金锭。 因此,如果气体在内腔中流动20 产生气体时,上部开口周围的气流 10a 容器10 降低流速。 因此,可以防止或至少最小化在氢粉碎过程中获得的合金粉末颗粒被吹散。 结果,容器中的整体组成10 储存的合金粉末变化不大,因此材料的产率提高。 当所得烧结体(或稀土金属烧结磁体)的稀土金属含量设定为约29.5质量%至约32.0质量%(更优选为约31.0质量%以下)时,该效果特别显着。 \n\n[0060] 此外,即使气体通过内腔20 如果以增加的流速供给,则可以进一步缩短处理时间(即,交换气体和/或冷却粉末所需的时间),并且可以提高产量。 这是由于以下事实:上部开口周围的流速 10a 每个容器的10 在该优选实施例中,可以减少周围产生的气流,该气流足够高以吹走根据现有技术的粉末。 此外,合金粉末颗粒散布在壳体内的不同位置30 留下的数量要少得多。 因此,即使内腔20 外壳30 暴露在空气中,这些粉末颗粒被氧化,着火的风险显着降低,并且氢粉碎过程可以更安全地进行。\n\n  [0061] 在氢气粉碎机中100 根据上述优选实施例,加热器是26 进气口之间32 和出气口34 排列在内部空腔20之下或之上。 按照 图。的顺序排列。 显示了2个。 这样,在内腔中垂直的气流20 由加热器26生成。 减弱,而强劲的气流仅沿着加热器26的长度流动。  (即在内腔20的水平方向上)。 因此,使用防风板50来减弱这种强气流。 仅在容器10的前面。 布置(即使其面向容器10的侧面12)。\n\n  [0062] 但是,当强气体在垂直方向上在内腔内部流动时20 如果产生热风(例如,如果没有加热装置26),则另外的防风板优选在上部开口 10a上方。 容器10的容器。 预期的。 例如,如 图。中所示。 在图7A中,盖子(即防风罩)18 布置为使其与顶部开口 10a相遇。 容器10的容器。 重叠并防止粉末颗粒被强烈的垂直气流吹走。 为了提高气流产生的热交换效率,盖子上装有18 最好是孔19  。 另外,18优选在盖子之间。 并且侧面的顶部12 容器主体的11 空格 19a 预期的。 取决于内部空腔内部的气流的方向20 已创建,防风罩50 来自氢粉碎机100 可以省略,封面18 可以用作唯一的防风板。\n\n 烧结磁铁的制造方法\n\n  [0063] 以下通过实例描述不构成本发明的一部分的烧结磁体的制造方法。 该方法包括使用上述氢粉碎机100进行的氢粉碎工艺。  。 在以下描述的方法中,通过快速冷却工艺获得的合金锭(或合金薄片)被用作烧结磁体的原料合金。 原因是如上所述的根据本发明优选实施方式的氢粉碎机特别有效地适用于对这种快速凝固的合金进行氢粉碎处理。 \n\n[0064] 首先,通过已知的流延法生产具有期望组成的用于R-T-(M)-B型磁体的合金材料,然后将其存储在预定的容器中。 通过带钢铸造法生产的这种材料合金的厚度优选地为大约0.03至大约10mm。 该铸造带状合金优选包含R 2  T 14  B晶粒的短轴尺寸为约0.1至约100μm,长轴尺寸为约5至约500μm,并且在R 2之间的晶界中包含富R相。  T 14  B晶粒分散。 富R相的厚度优选为约10μm或更小。 在对材料合金进行氢粉碎处理之前,优选将其粗粉碎成平均粒径为约1至约10mm的薄片。 例如,在美国专利第5,383,978号中描述了一种使用流延铸造法制备活性成分合金的方法,该专利的内容通过引用结合于此。 与通过铸锭法制造的合金铸锭相比,通过氢粉碎法将通过使用这种快速冷却法制造的合金薄片研磨成更细的颗粒。 因此,根据上述本发明的优选实施方式的挡风玻璃板特别有效地适用于这种合金薄片。\n\n  [0065] 然后将粗粉碎的材料合金薄片放入10容器中。 填充,然后将其放在机架上15 附上。 然后,使用物料运输机,例如,机架15 在其上的容器10 已安装在氢粉碎机10的前面。 然后运入氢气粉碎机10 邀请。\n\n  [0066] 然后覆盖36 氢粉碎机100 关闭以开始氢气粉碎过程。 氢粉碎过程可以例如对应于 图。中的过程。 可以执行图9所示的温度曲线。 在 图。中的特定示例中。 参照图9,真空泵工艺阶段I首先进行约0.5小时,其中在氢气粉碎机100中的真空度为约1至约10Pa。 被生产。 此后,进行氢吸藏阶段II约2.5小时。 在氢吸收过程的第二阶段,外壳30 将氢气供应到内腔20的内部。 创造氢气气氛。 在该工艺阶段,氢气压力优选为约200Pa至约400kPa。 由于所有合金薄片都包含氢,因此内腔20中的温度会升高。 一次至约300°C\n\n  [0067] 此后,在约0至约3Pa的减压下进行脱氢工艺阶段III约5.0小时。 在管道22的同时执行该脱水过程步骤III。 前后盖 24a 和 24b 密闭,内部空腔20 使用加热装置26 加热到大约550°C。 此后,用所得粗粉进行约5.0小时的冷却工艺阶段IV,使氩气流入壳体30 被喂养。 \n\n[0068] 在冷却过程IV中,如果内腔中的大气温度变为20 仍然相对较高(例如超过100°C),室温下的氩气进入壳体30 引发,由此将粗粉冷却。 在此冷却过程中,前盖和后盖为 24a 和 24b  打开,使氩气流入内腔20 内管22 可以吃饱 此后,当粗粉的温度达到相对较低的值(例如,大约100°C或更低)时,已将氩气冷却到低于室温的温度(例如,大约50°C的温度) 低于室温10°C),最好在外壳30中。 开始增加冷却效果。 氩气可以约10 Nm 3的流速流动。  /分钟至约100 Nm 3  /分钟\n\n  [0069] 一旦将粗粉的温度降低至约20至约25℃,优选将约室温(其温度不低于室温不超过5℃)的氩气添加至内腔20 进料以将粗粉冷却至约室温。 这样,外壳30内部就不会发生冷凝。 在封面36上。 氢粉碎机100的形式。 打开。 外壳内的冷凝物30 应该被淘汰。 原因是表壳内是否有水30 由于冷凝而产生的碳氢化合物会在真空泵工艺阶段I中冻结或蒸发,这会花费太多时间才能完成真空泵工艺阶段I.\n\n  [0070] 氢粉碎过程完成后,容器变为10  (或机架15)最好来自氢气粉碎机100 使用例如日本专利申请公开第2000-303 107号中描述的方法卸载。 \n\n[0071] 在氢气粉碎机100中。 根据上述本发明的优选实施例,挡风玻璃板是50 上游,基于气流,即内部空腔20 已创建其中容器10的容器。 存放含有稀土合金的薄片。 也就是说,挡风玻璃50 在框架15的前面。 安排。 因此,粉末颗粒不会被气流吹走或散落,如果气体进入内腔20,则会发生这种情况。 如果惰性气体会进入内腔20,则将被引入或撤出。 将开始冷却粗粉。 如果每个容器10 装有约20至约25公斤的合金薄片,没有挡风玻璃50 粉末颗粒被吹走并散落,从而损失约20至约30克。 相反,通过使用氢气粉碎机100 保持挡风玻璃50 包含的粉末损失量可以减少到仅约2至约3克。 在没有挡风玻璃的情况下,将吹散的粉末量减少到大约2至3 g,50 使用内部空腔的内部20 产生的气流减弱。 然后吞吐量将降低,这是不利的。 另外,本发明的发明人确定了在有和没有挡风玻璃的情况下通过烧结粗粉而获得的烧结体中的碳含量50 已经制成。 结果,发现挡风玻璃50 不希望的是,该烧结体的平均碳浓度为约470ppm。 另一方面,当挡风玻璃50时。 如果存在,则烧结体的平均碳浓度降低至约450ppm。\n\n  [0072] 此后,已冷却至约室温的粗粉使用例如喷射磨机进一步研磨,从而由该材料制成细粉。 随后,将粘合剂(或润滑剂)与该细粉混合,然后使用压力机将混合物压制成所需的形状。 以这种方式,获得了生坯(预压坯)。 之后,对生压坯进行一系列的制造和处理步骤,例如去除粘合剂,烧结,冷却和时效处理,从而获得稀土合金烧结磁体。\n\n  [0073] 本发明的发明人通过实验发现并证实了当氢粉碎机100时。 根据本发明的优选实施方案,使用不均匀的粉末,不仅由于分散的氧化粉末颗粒的不期望的混合而导致不完全烧结的部件,而且可以降低烧结体的碳浓度。 \n\n[0074] 上面已经描述了应用于带材铸造合金的各种方法。 可替代地,该方法还可以有效地应用于粉碎已经通过离心铸造法快速冷却和固化的合金,例如,如日本专利特开平9-31609号中所述。 在上述优选实施例中,防风罩是50 板状元素。 防风板仅具有降低气流的速度的任务,因此也可以具有栅格或网状的形状,作为多个杆的组合。 另外,在上述优选实施例中,挡风玻璃板为50 用于15的机架。 预期的。 或者,防风板50 也是容器10侧面的​​组成部分。 形成。 此外,在上述优选实施例中,容器10 在机架上15 附着,然后进入内腔20 氢制粉机的100 介绍。 如有必要,容器10 也直接进入内腔20 将介绍。 在这种情况下,这些容器具有10 然而,优选地,使用间隔件在水平和垂直方向上彼此间隔一定距离,以便例如允许气体在相邻的容器之间平缓地流动。 启用。 还应当注意,尽管在根据上述优选实施方式的氢粉碎机中,具有底面和侧面作为容器的盒10 根据本发明,如果使用杯状容器,则可以使用杯状容器,其底面和侧面彼此结合。\n\n 工业适用性\n\n  [0075] 本发明的各种优选实施方式提供了一种设备,利用该设备可以对稀土合金进行氢化处理,从而充分地使稀土元素的不期望的氧化最小化并且极大地提高生产率。\n\n  [0076] 通过在制造稀土烧结磁体的过程中采用氢粉碎法,可以有效地将根据本发明的各种优选实施方案的氢化装置应用于粉碎稀土合金锭,从而提高材料的产率和产量。 该设备特别有效地适用于通过快速冷却工艺制造的稀土合金锭的氢粉碎工艺。\n\n  [0077] 不言而喻,前面的描述仅是对本发明的说明。 在不脱离本发明的范围的情况下,本领域技术人员可以做出各种替换和修改。 因此,本发明包括在所附权利要求的范围内的所有这样的替代,修改和变更。');
INSERT INTO `os_patent_instruction_text` VALUES (12937, 22766, '【0001】\n\n【発明の属する技術分野】\n\n本発明は永久磁石を用いて磁界を形成する装置に関する。\n\n【0002】\n\n【従来の技術】\n\n近年、磁気特性の高い永久磁石が開発されてきており、モータなどの各種機器において利用されている。このような永久磁石としては、例えば、希土類磁石があり、そのなかでもネオジム·鉄·ボロン系磁石は、高い磁気エネルギー積を示し、かつ、価格も比較的安いため、多くの用途が見込まれている。\n\n【0003】\n\n機器において永久磁石を用いる場合、磁石のサイズや配置などを適切に選択することによって、所望の磁界を形成することが重要である。例えば、所定の方向における磁束密度の大きさが急激に変化する磁界を形成することが望ましい場合がある。\n\n【0004】\n\n【発明が解決しようとする課題】\n\n例えば、磁気冷凍装置は、強磁性体や常磁性体に対して磁界の印加と無印加とを繰り返すことによって冷却を行なうが、強い磁界が発生している領域と、磁界がほとんど発生していない領域とが近接して設けられることが望ましい。この場合、上述のように強度が急激に変化する磁界を形成することが望ましいが、永久磁石を用いてこのような磁界を形成しようとした場合、強い磁界を形成するために強力な磁石を用いると、その近傍の領域の磁界強度も高くなる。従って、強い磁界が形成される領域と、磁界がほとんど形成されない領域とを近接して設けることは困難であった。\n\n【0005】\n\n本発明は、上記問題点を解決するためになされたものであり、所定の場所において磁束密度が急激に変化する磁界を形成することができる磁界形成装置を提供することを目的とする。\n\n【0006】\n\n【課題を解決するための手段】\n\n本発明の磁界形成装置は、ヨーク材と、それぞれがN極とS極とを有し、前記ヨーク材に\n\n固定され磁気回路を形成する第1の一対の磁石であって、前記第1の一対の磁石のうちの一方の磁石のN極から前記第1の一対の磁石のうちの他方の磁石のS極に向かう第1の磁束を発生する第1の一対の磁石と、それぞれがN極とS極とを有し、前記第1の一対の磁石の近傍において前記第1の一対の磁石に対して並列して配置されるように前記ヨーク材に固定され、磁気回路を形成する第2の一対の磁石であって、前記第2の一対の磁石のうちの一方の磁石のN極から前記第2の一対の磁石のうちの他方の磁石のS極に向かう第2の磁束を発生する第2の一対の磁石とを備え、所定の面における前記第1の磁束の向きと、前記第2の磁束の向きとが逆向きである。\n\n【0007】\n\nなお、前記所定の面は、典型的には、前記第1の一対の磁石のN極およびS極ならびに前記第2の一対の磁石のN極およびS極に対向する面である。\n\n【0008】\n\n好ましい実施形態において、前記第1の一対の磁石のそれぞれの磁化方向は、前記第1の一対の磁石のそれぞれが前記ヨーク材に対して固定される面のそれぞれに対して略垂直であり、前記第2の一対の磁石のそれぞれの磁化方向は、前記第2の一対の磁石のそれぞれが前記ヨーク材に対して固定される面のそれぞれに対して略垂直である。\n\n【0009】\n\n好ましい実施形態において、前記第1の一対の磁石に対向するように間隔を開けて設けられた第3の一対の磁石をさらに備え、前記第1の一対の磁石と、前記第3の一対の磁石とによって、互いに反発する磁界が形成される。\n\n【0010】\n\n好ましい実施形態において、前記第2の一対の磁石に対向するように間隔を開けて設けられた第4の一対の磁石をさらに備え、前記第2の一対の磁石と前記第4の一対の磁石とは互いに反発する磁界を形成する。\n\n【0011】\n\n好ましい実施形態において、前記第1の一対の磁石の各々の体積は、前記第2の一対の磁石の各々の体積の2倍以上である。\n\n【0012】\n\n好ましい実施形態において、前記第1の一対の磁石のうちの一方の磁石と、前記第1の一対の磁石のうちの他方の磁石との間に設けられ、前記第1の一対の磁石が形成する前記第1の磁束と平行な方向に磁化方向を有する第5の磁石をさらに有する。\n\n【0013】\n\n好ましい実施形態において、前記第5の磁石は、前記第1の一対の磁石のうちの一方の磁石のN極部分と、第1の一対の磁石のうちの他方の磁石のS極部分との間において設けられ、前記第5の磁石のN極が前記一方の磁石のN極部分と対向し、かつ、前記第5の磁石のS極が前記他方の磁石のS極部分と対向する。\n\n【0014】\n\n好ましい実施形態において、前記第5の磁石は、前記第1の一対の磁石より保磁力が高い。\n\n【0015】\n\n【発明の実施の形態】\n\n以下、図面を参照しながら本発明の実施形態を説明する。\n\n【0016】\n\n(実施形態1)\n\n図1は、実施形態1の磁界形成装置100の構成を示す斜視図である。磁界形成装置100は、炭素鋼などの高透磁率の磁性体材料から形成された断面コ字型のヨーク材10と、ヨーク材10の下部内側面10L上に固定された、一対のメイン磁石12aおよび12bと、同じく下部内側面10L上に固定された一対のサブ磁石14aおよび14bとを備えている。通常、メイン磁石12a、12bの体積はサブ磁石14a、14bの体積よりも大きいことが好ましい。\n\n【0017】\n\nなお、図1には、メイン磁石12aおよび12bとサブ磁石14aおよび14bとの間に間隙が設けられた形態を示しているが、これらは互いに接するように配置されていても良い。また、メイン磁石12aとメイン磁石12b、および、サブ磁石14aとサブ磁石14bは、それぞれ、密着していなくともよい。\n\n【0018】\n\nまた、ヨーク材10の上部内側面10Uには、一対のメイン磁石12aおよび12bにギャップを開けて対向するように設けられた一対の対向メイン磁石16aおよび16bが固定されている。また、上部内側面10Uには、一対のサブ磁石14aおよび14bにギャップを開けて対向するように設けられた一対の対向サブ磁石18aおよび18bも固定されている。メイン磁石12aおよび12bと対向メイン磁石16aおよび16bとの間およびサブ磁石14aおよび14bと対向サブ磁石18aおよび18bとの間には、空間20が設けられている。\n\n【0019】\n\nメイン磁石12aおよび12b、ならびにメイン磁石16aおよび16bは、それぞれ、第1の一対の磁石または第3の一対の磁石に相当する。また、サブ磁石14aおよび14b、ならびにサブ磁石18aおよび18bは、それぞれ、第2の一対の磁石または第4の一対の磁石に相当する。\n\n【0020】\n\nなお、これらの磁石としては、表面をアルミニウムやニッケルなどで覆った希土類焼結磁石を用いることができ、ヨーク材10への固定は接着剤を用いて行なわれる。メイン磁石12aおよび12bおよび対向メイン磁石16aおよび16bとしては、例えば、住友特殊金属社製のNEOMAX-44H(HcJ:1273kA/m)を用いることができ、サブ磁石14aおよび14bおよび対向サブ磁石18aおよび18bとしてはNEOMAX-50を用いることができる。\n\n【0021】\n\nまた、ヨーク材10は、上部内側面10Uおよび下部内側面10Lを含む部分が磁性体材料によって形成されていればよく、必ずしも全体が磁性体材料で一体的に形成されている必要はない。\n\n【0022】\n\n一対のメイン磁石12aおよび12bは、ヨーク10の下部内側面10Lに対して垂直な方向(z軸方向)において、互いに対して逆向きに磁化されており、磁気回路を形成している。これによって、一方のメイン磁石12aのN極から、他方のメイン磁石12bのS極に向かう磁束が形成される。この磁束のx-y面における射影(磁束の向き)は矢印A1で示される方向である。\n\n【0023】\n\nまた、一対の対向メイン磁石16aおよび16bのそれぞれは、上部内側面10Uに対して垂直な方向(z軸方向)において、互いに対して逆向きに磁化されており、磁気回路を形成している。また、対向メイン磁石16aおよび16bのそれぞれは、メイン磁石12aおよび12bのそれぞれに対して、同じ極同士が対向するように磁化されている。すなわち、メイン磁石12aのN極と対向メイン磁石16aのN極とが対向し、メイン磁石12bのS極と対向メイン磁石16bのS極とが対向する。これによって、メイン磁石12aおよび12bと対向メイン磁石16aおよび16bとの間で反発する磁界が形成されている。\n\n【0024】\n\nこのようにして、メイン磁石12aおよび12bと対向メイン磁石16aおよび16bとの間の空間20では、図に示すx-y面(水平面)内においてx軸方向に発生する磁束A1を主とする磁界が形成される。\n\n【0025】\n\nまた、サブ磁石14aおよび14bは、ヨーク10の下部内側面10Lに垂直な方向(z\n\n軸方向)において、互いに対して逆向きに磁化されており、磁気回路を形成している。ただし、これらの磁石14aおよび14bは、メイン磁石12aおよび12bが発生させる磁束と逆向きの磁束を発生させるように磁化されている。これによって、一方のサブ磁石14bのN極から、他方のサブ磁石14aのS極に向かって、x-y面への射影が矢印A2で示されるような方向に進む磁束が形成される。メイン磁石12a、12bとサブ磁石14a、14bの磁石との間で磁石どうしが対向する面の間隔(Y軸方向の距離)は、0.5mm以上5mm以下の範囲に設定することが好ましい。\n\n【0026】\n\n対向サブ磁石18aおよび18bのそれぞれは、サブ磁石14aおよび14bのそれぞれに対して同じ極同士が対向するように磁化されており、これらによって反発する磁界が形成される。これにより、x-y面(水平面)内において磁束A1と逆向きに発生する磁束A2を主とする磁界が形成される。\n\n【0027】\n\nこのように、空間20における水平面(x-y面)において、メイン磁石12aおよび12bがx軸方向に沿う第1の方向に強い磁界を形成するとともに、サブ磁石14aおよび14bがx軸方向に沿い第1の方向とは反対向きの第2の方向に或る程度の強さを有する磁石を形成することで、そのx軸方向における磁束密度がy軸方向(メイン磁石およびサブ磁石によって形成される磁束とほぼ直交する方向)に沿って急激に変化する磁界が形成される。つまり、メイン磁石12aおよび12bのy軸方向における奥側では、x軸方向の磁束密度が大きいが、メイン磁石12aおよび12bとサブ磁石14aおよび14bとの間の位置では、これらの磁石が形成する磁界が干渉する(打ち消しあう)ことによって、x軸方向の磁束密度が低下する。これにより、y軸方向に沿って強い勾配をもった磁界が形成される。\n\n【0028】\n\nなお、残留磁束密度が略等しい磁石材料を用いる場合、メイン磁石12aおよび12bの体積は、サブ磁石14aおよび14bの体積の2倍以上であることが望ましい。これは、メイン磁石12aおよび12bが形成する磁界の強度を、サブ磁石14aおよび14bが形成する磁界の強度よりも十分に大きくするためである。所定の領域では十分に強く、かつ、その近傍の領域では非常に弱いような磁界を形成するためには、上述のようにメイン磁石12aおよび12bとサブ磁石14aおよび14bとの体積差を或る程度大きくとることが望ましい。\n\n【0029】\n\nなお、メイン磁石12aおよび12bとサブ磁石14aおよび14bとの下部内側面10Lにおける配置は、図2(a)に示すように全ての磁石が接するような配置でもよいし、図2(b)に示すように、全てが間隔を開けて配置されていてもよい。また、図2(c)に示すように、磁石の端面が円形の磁石(すなわち円柱状の磁石)を用いて構成されていてもよい。\n\n【0030】\n\nまた、ヨークの下部内側面10Lおよび上部内側面10Uは、1つの平坦な面である必要はなく、図2(d)に示すように、段差を有していてもよい。さらに、曲面であってもよい。\n\n【0031】\n\n(実施形態2)\n\n図3は、実施形態2の磁界形成装置200の構成を示す斜視図である。磁界形成装置200が、実施形態1の磁界形成装置100と異なる主な点は、一方のメイン磁石12aと他方のメイン磁石12bとの間の位置に、さらなるサブ磁石22が設けられている点である。さらなるサブ磁石22としては、メイン磁石12a、12bよりも保磁力が高い住友特殊金属社製のNEOMAX-39SH(HcJ:1671kA/m)を使用することができる。このさらなるサブ磁石22は、第5の磁石に相当する。\n\n【0032】\n\n図4は、下側のメイン磁石12aおよび12bと、サブ磁石22とを示す斜視図である。図示するように、サブ磁石22は、メイン磁石12aとメイン磁石12bとの境界に形成された切り欠き部12cにおいて、その切り欠き部12cの上半分のみに設けられており、メイン磁石12aとメイン磁石12bとによって挟まれている。また、このサブ磁石22の磁化方向は、水平面(x-y面)において、メイン磁石12aおよび12bによって形成される磁束の方向A1と略平行な方向であり、メイン磁石12aのN極部分と、サブ磁石22のN極とが対向し、かつ、メイン磁石12bのS極部分とサブ磁石22のS極とが対向している。なお、ここでは、N極とS極とを有する磁石において、S極よりもN極に近い部分をN極部分と呼び、N極よりもS極に近い部分をS極部分と呼んでいる。また、図には、サブ磁石22を2つの磁石から構成した場合を示しているが、サブ磁石22は1つの磁石から構成されていても良い。なお、サブ磁石22を2つの磁石から構成すれば、左右に対称な磁界を形成しやすいという利点が得られる。\n\n【0033】\n\n次に、図5(a)および(b)を参照しながら、このサブ磁石22の機能を説明する。図5(a)は、サブ磁石22を設けない場合のメイン磁石12aおよび12b(および対向メイン磁石16aおよび16b)が形成する磁束を表す磁力線を示し、図5(b)は、サブ磁石22を設けた場合の磁力線を示す。\n\n【0034】\n\n図5(a)に示すように、サブ磁石22を設けない場合、メイン磁石12aおよび12bの中央部Cから離れたところで発生する磁束(磁力線M1)は、空間20のz軸方向(高さ方向)中央部20’付近を通るのに対し、中央部Cの近傍で発生する磁束(磁力線M2)は、空間20における磁石表面に近い領域を通ることになる。このような磁界を形成している場合、空間20の中央部20’における磁束密度を向上することは困難である。\n\n【0035】\n\nこれに対し、サブ磁石22を設けた場合、サブ磁石22のN極と、メイン磁石12a(または対向メイン磁石16a)のN極部分とが反発し合うので、中央部Cから離れたところで発生する磁束(磁力線M1)だけでなく、中央部Cの近傍で発生する磁束(磁力線M2)も、空間20の中央部20’を通るようになる。これによって、空間20の中央部20’における磁束密度を特に向上させることができる。\n\n【0036】\n\nなお、このようにサブ磁石22を設ける場合、上述のようにメイン磁石12aとの間で反発する磁界を形成するためには、サブ磁石22を切り欠き部12cの上半分(すなわち、メイン磁石12aのN極部分に対応する部分)だけに設けることが望ましい。このため、サブ磁石22の高さh2は、メイン磁石12aの高さh1の50%以下であることが好ましい。ただし、磁束を空間20の中央部20’に集めるという効果を得るためには、サブ磁石22は或る程度の体積を有している必要があり、メイン磁石12aの高さh1の10%以上であることが望ましい。なお、サブ磁石22の高さは、メイン磁石12aの高さh1の10%〜66%程度であれば磁束を強めるための磁石として有効に機能する。また、サブ磁石22によって、メイン磁石12aおよび12bの中央付近の磁束を有効に利用するようにするためには、サブ磁石の幅W2を、メイン磁石全体の幅W1の1%〜30%に設定することが望ましい。\n\n【0037】\n\n以上のように構成された磁界形成装置200によって形成される磁界を図6に示す。図に示すように、メイン磁石12aおよび12bがx軸方向において形成する磁界は、サブ磁石22によって強められるため、この部分では比較的高い磁界を形成することができるとともに、サブ磁石14aおよび14bの近傍では、磁界が干渉するため、x軸方向にはほとんど磁界が形成されない。従って、急激に強度が変化する磁界を形成することが可能になる。\n\n【0038】\n\nなお、サブ磁石22は、メイン磁石12aおよび12bよりも保磁力が高いことが望まし\n\nい。サブ磁石22は、体積が比較的小さく、形成する磁界の強度は小さいため、メイン磁石12aおよび12bからの磁界の影響を強く受けるが、この影響によって、サブ磁石22の減磁が生じることを防止するためである。\n\n【0039】\n\n(実施例および比較例)\n\n図7は、サブ磁石14aおよび14bまたは22を有さない磁界形成装置(比較例)、実施形態1の磁界形成装置100(実施例1)および実施形態2の磁界形成装置200(実施例2)にそれぞれを用いた場合における、x軸方向の磁束密度をy軸方向に沿って位置を変えて測定したときのグラフを示す。なお、グラフに示す位置P1は、メイン磁石12aおよび12bのサブ磁石14側の端面に対応している。また、グラフに示す位置P2は、サブ磁石14aおよび14bが設けられている位置に相当する。なお、グラフでは、グラフの右側がメイン磁石12aおよび12b側を表し、グラフの左側がサブ磁石14aおよび14b側を表している。また、磁束密度の測定は、図3に示すように、メイン磁石12aおよび12bの中央を通り、空間20の高さ方向中央部の高さにおいて、y方向に沿って破線Brで示す方向を測定している。磁束密度の測定は、ベル社製のガウスメータを用いて測定した。\n\n【0040】\n\nグラフからわかるように、比較例では、メイン磁石によって強い磁束密度が得られる代わりに、メイン磁石から離れた点においても、比較的強い磁束密度が観察され、磁束密度を十分に低下させることができない。この比較例では、メイン磁石の端部において、1mmあたり0.04Tの低下が生じるような傾斜の小さい磁界しか形成できなかった。\n\n【0041】\n\nこれに対して実施例1では、サブ磁石14aおよび14bの影響で、メイン磁石12aおよび12bの比較的近くであっても、磁束密度をほとんど0にすることができる。\n\n【0042】\n\nさらに、実施例2では、サブ磁石22の影響によって、メイン磁石12aおよび12b側の磁束密度を比較的高くできるとともに、サブ磁石22が設けられた位置の近傍においても比較的高い磁束密度が得られる。また、サブ磁石14aおよび14bの影響で、サブ磁石22から少し離れたところでは、磁束密度を十分に低下させることができている。測定の結果、実施例2では、メイン磁石12aおよび12bの端部(すなわち、サブ磁石22が設けられた部分)の近傍において、1mmあたり0.08Tの低下が生じるような傾斜の大きい磁界を形成することができた。このようにして、強い磁束密度を有する領域と、弱い磁束密度を有する領域とを、近接して設けることが可能になっている。\n\n【0043】\n\n【発明の効果】\n\n本発明の磁界形成装置によれば、所定の領域において磁束密度が高く、所定の領域の近傍の領域においては磁束密度が非常に小さい、強度の勾配の大きい磁界を形成することが可能である。\n\n【図面の簡単な説明】\n\n【図1】本発明の実施形態1に係る磁界形成装置の構成を示す斜視図である。\n\n【図2】本発明の実施形態1に係る磁界形成装置の別の構成を示す図である。\n\n【図3】本発明の実施形態2に係る磁界形成装置の構成を示す斜視図である。\n\n【図4】本発明の実施形態2に係る磁界形成装置の一部の構成を示す斜視図である。\n\n【図5】本発明の実施形態2に係る磁界形成装置において形成される磁界を説明するための側面図である。\n\n【図6】本発明の実施形態2に係る磁界形成装置において形成される磁界を示す平面図である。\n\n【図7】比較例、実施例1、および実施例2における磁束密度を測定したグラフである。\n\n【符号の説明】\n\n100、200  磁界形成装置\n\n10  ヨーク材\n\n12aおよび12b  メイン磁石\n\n14aおよび14b  サブ磁石\n\n16aおよび16b  対向メイン磁石\n\n18aおよび18b  対向サブ磁石\n\n20  空間\n\n22  さらなるサブ磁石', '【0001】\n\n技术领域\n\n本发明涉及一种用于使用永磁体形成磁场的装置。\n\n【0002】\n\n发明背景\n\n近年来,已经开发出具有高磁性的永磁体,并用于诸如电动机的各种装置中。这种永磁体例如是稀土磁铁,其中钕 - 铁和硼基磁体显示出高磁性能量产品,并且由于价格相对较低,因此预计这么多的应用存在。\n\n【0003】\n\n当在装置中使用永磁体时,通过适当地选择磁体的尺寸和布置来形成所需的磁场是重要的。例如,可能希望形成磁场,其中磁通密度在预定方向上的幅度迅速地改变。\n\n【0004】\n\n本发明要解决的问题\n\n例如,尽管磁制冷装置通过重复磁场和顺磁体来执行冷却,但是它承受冷却,但是发生了强磁场的区域,并且磁场几乎没有发生。这是理想的区域是提供邻近。在这种情况下,如上所述,希望形成强度快速改变的磁场,但是当试图使用永磁体形成这种磁场时,使用强大的磁体形成强磁场和附近区域的磁场强度也高。因此,难以提供形成强磁场的区域,并且几乎不紧密地形成磁场的区域。\n\n【0005】\n\n已经制作本发明以解决上述问题,并且本发明的目的是提供一种能够形成磁场的磁场形成装置,其磁通密度在预定地点迅速变化。\n\n【0006】\n\n[解决问题的手段]\n\n本发明的磁场形成装置具有轭材料和N电极和S杆,以及轭材料​​。\n\n形成磁路的第一对磁体并形成磁路,以及从第一对磁体的N极的第一一体磁体的另一个磁体的另一个磁体的S杆是第一对磁体,这是第一对磁体产生第一朝向第一磁通量的磁通量具有n极和S杆,并平行于第一对磁体附近的第一对磁体。它是固定在吊架上的第二对磁体以便布置,并形成磁路,第二对磁体中的第二一对磁杆到第二磁通量在预定表面中的第一磁通量的第一磁通量,以及第一磁通量的第二磁通量在预定表面中,方向是反向的。\n\n【0007】\n\n预定表面通常是与第二对磁体的N极和S杆相对的表面和第二对磁体的S杆。\n\n【0008】\n\n在优选实施例中,第一对磁体中的每一个的磁化方向基本垂直于相对于磁轭材料固定的每个面,每个面部是固定的,每个磁体相对于轭材料,每个第二对的磁化方向磁体基本垂直于第二对磁体的每个面。\n\n【0009】\n\n在优选实施例中,还包括第三对磁体,该磁体设置有间隔开的间隔,所述第一对磁体,所述第一对磁体和所述第三对磁体形成彼此倍频的磁场。\n\n【0010】\n\n在优选实施例中,还包括第四对磁体,其设置有间隔开的间隔,以面向第二对磁体,以及第二对磁体和第四磁体。形成彼此重新封装的磁场。\n\n【0011】\n\n在优选实施例中,第一对磁体中的每一个的体积大于第二对磁体的每个体积的两倍。\n\n【0012】\n\n在优选实施例中,第一对磁体和第一对磁体的另一个磁体中的一个设置成形为形成第一对磁体,第五磁体进一步在平行于第一磁通量的方向上具有磁化方向。\n\n【0013】\n\n在优选实施例中,第五磁体位于第一对磁体的一个磁体的N极部分和第一对磁体的另一个磁体的S杆部分之间。在第五磁铁的N极,n第五磁体的杆与一个磁体的N极部分相对,并且第五磁体的南极面向另一个磁体的S杆部分。\n\n【0014】\n\n在优选实施例中,第五磁体具有高于第一对磁体的矫顽力。\n\n【0015】\n\n发明内容\n\n在下文中,将参考附图描述本发明的实施例。\n\n【0016】\n\n实施例1\n\n图。图1是示出第一实施例的磁场形成装置100的结构的透视图。磁场形成装置100是固定在由诸如碳钢的高渗透磁性材料形成的横截面消隐轮10上的一对主磁体12a,以及固定在下部内侧表面101上的一对主磁体12a磁轭10和12b的磁轭10和12b,一对亚磁体14a和14b固定在下内侧表面10l上。通常,主磁体12a和12b的体积优选地大于亚磁体14a和14b的体积。\n\n【0017】\n\n虽然图图1示出了一种形式,其中在主磁体12a和12b和副磁体14a和14b之间设置间隙,它们可以设置成彼此接触。此外,主磁体12a,主磁体12b和副磁体14a和副磁铁14b可以不靠近接触。\n\n【0018】\n\n此外,在轭材料10的上部内侧表面10u上,固定为打开和面对一对主磁体12a和12b的一对相对的主磁体16a和16b是固定的。此外,在上部内侧表面10U上,还固定了一对相对的子磁体18a和18b,其设置为打开和面对一对亚磁体14a和14b。空间20设置在主磁体12a和12b和相对的主磁体16a和16b之间以及副磁体14a和14b之间以及相对的副磁体18a和18b之间。\n\n【0019】\n\n主磁体12a和12b,以及主磁体16a和16b分别对应于第一对磁体或第三磁体。而且,副磁体14a和14b和副磁体18a和18b分别对应于第二对磁体或第四颗磁体。\n\n【0020】\n\n另外,由于这些磁体,可以使用覆盖有铝或镍的稀土烧结磁体,并且使用粘合剂将固定到轭材料10。主磁体12a和12b和相对的主磁体16a和16b包括由Sumitomo特殊金属制造的NeoMax-44h。cJ:可以使用1273 ka / m),并且NeoMax-50可用作亚磁体14a和14b和相对的副磁体18a和18b。\n\n【0021】\n\n另外,磁轭材料10可以由磁性材料材料形成,包括上内侧表面10u和下内侧表面10L,并且整体不一定必须由磁性材料材料整体形成。\n\n【0022】\n\n一对主磁体12a和12b在垂直于磁轭10的下内侧表面10L的方向(z轴方向)上彼此相反的方向磁化,并形成磁路。结果,形成从一个主磁体12a的n极到另一个主磁体12b的s杆的磁通量。该磁通量的XY平面中的突起(磁通量)是箭头A1所示的方向。\n\n【0023】\n\n而且,一对相对的主磁体16a和16b中的每一个在垂直于上内侧表面10u的方向(z轴方向)上彼此相反地磁化,并形成磁路。而且,每个相对的主磁体16a和16b被磁化成面部的每个主磁体12a和12b以面对相同的杆。也就是说,主磁体12a的n极和相对主磁体16a的n杆彼此面对,并且主磁体12b的S杆和相对主磁体16b的S杆彼此面对。这形成了磁场,其在主磁体12a和12b和相对的主磁体16a和16b之间排斥。\n\n【0024】\n\n以这种方式,在主磁体12a和12b之间的空间20和面对主磁体16a和16b之间,磁场主要基于所示XY表面(水平面)中的X轴方向上产生的磁通量A1在图中形成。它将完成。\n\n【0025】\n\n而且,副磁体14a和14b垂直于磁轭10的下内侧表面10L(z\n\n在轴向方向上,它相对于彼此磁磁化,并且形成磁路。然而,这些磁体14a和14b被磁化以产生与由主磁体12a和12b产生的磁通量相对的磁通量。结果,磁通量由一个子磁体14b的n极形成到另一个子磁体14a的S杆,以及磁通量进入箭头A2中的突起的突起的方向。主磁体12a和12b之间的距离和副磁体14a和14b的磁体(y轴方向的距离)的表面的表面(y轴方向上的距离)优选地是设定在0.5毫米或以上,5毫米或更小范围内。\n\n【0026】\n\n每个相对的子磁体18a和18b被磁化成面部的副磁体14a和14b,使得形成彼此面对的相同磁极,并且形成由此被拒绝的磁场。结果,形成磁场主基磁通A2,其在与XY表面(水平面)中的磁通A1相反的方向上产生。\n\n【0027】\n\n如上所述,在空间20中的水平平面(XY平面)中,主磁体12a和12b沿X轴方向沿第一方向上呈磁场强,沿X-沿X-形成副磁铁14a和14b轴方向1通过在与方向相反的第二方向上形成具有一定程度的强度的磁体,X轴方向上的磁通密度是Y轴方向(由主磁体和子磁铁形成的磁通量)并且磁通量沿基本正交的方向形成快速改变的磁场。也就是说,在主磁体12a和12b的Y轴方向的后侧,x轴方向上的磁通密度大,但在主磁体12a和12b和副磁体14a之间的位置处并且,通过干扰磁场,这些磁体形成X轴方向上的磁通密度。这形成了沿Y轴方向具有强斜率的磁场。\n\n【0028】\n\n在使用具有基本上等同的磁通密度的磁体材料的情况下,期望主磁体12a和12b的体积大于子磁体14a和14b的体积的两倍。这是因为由主磁体12a和12b形成的磁场的强度足够大于由副磁体14a和14b形成的磁场的强度。为了在预定区域中形成非常弱的磁场,并且在附近的区域中,主磁体12a和12b以及子​​磁铁14a和14b是各种各样的,需要更大的程度。\n\n【0029】\n\n主磁体12a和12b的下部内侧表面10L中的布置和副磁体14a和14b可以是如图2所示的所有磁体所示的布置。2(b) 。如图所示,所有可以间隔和安排。此外,如图2所示。如图2C所示,磁体的端面可以使用圆形磁铁(即,圆柱形磁体)来配置。\n\n【0030】\n\n此外,下内侧表面10和轭的上部侧表面10u不一必须是一个平坦表面,并且可以具有如图2(d)所示的步骤。此外,它可以是弯曲的表面。\n\n【0031】\n\n实施例2.\n\n图。图3是示出第二实施例的磁场形成装置200的结构的透视图。与第一实施例的磁场形成装置100不同的主要点是主磁体12a设置在一个主磁体12a和另一个主磁体12b之间,并且提供另外的子磁体22。是。附加的子磁铁22包括由Sumitomo特殊金属公司制造的NeoMAX-39SH(H),其具有比主磁体12a和12b更高的矫顽力。cJ:可以使用1671 ka / m。该另外的子磁体22对应于第五磁体。\n\n【0032】\n\n图。图4是示出下主磁体12a和12b和子磁体22的透视图。如图所示,子磁体22仅设置在形成在主磁体12a和主磁体12b之间的边界处的凹口12c中的凹口12c的第二半部分中,以及它夹在的主磁铁12a和主磁铁12a由磁铁12b。此外,子磁体22的磁化方向是水平平面(XY平面),并且是基本平行于由主磁体12a和12b形成的磁通量的方向a1的方向,以及主的n极部分磁体12a和副磁体的22面的n极和主磁体12b的S杆部分和子磁铁22的s杆相对。这里,在具有n杆和S杆的磁体中,靠近n极的部分也被称为n极部分或靠近n极的部分,并且还参考靠近s杆的部分作为S杆部分。此外,尽管示出了子磁体22由两个磁体22构成的情况,但是副磁铁22可以由一个磁体组成。如果子磁体22由两个磁铁组成,则可以获得有利的优点:对称磁场容易形成在左右上。\n\n【0033】\n\n接下来,将参考图4和图5描述子磁体22的功能。图5(a)和5(b)。图5(a)示出了当未提供子磁体22时,表示由主磁体12a和12b(以及相对的主磁体16a和16b)形成的磁通量的磁场线。图5(b)显示了子磁体22.在提供时显示磁场线。\n\n【0034】\n\n如图1所示。如图5A所示,当不提供子磁体22时,从主磁体12a和12b的中心部分C产生的磁通(磁力线M1)是Z轴方向(高度方向)空间20在中央部分20\'附近的同时,在中心部分C附近产生的磁通量(磁力线M2)通过靠近空间20的表面的区域。当形成这样的磁场时,难以改善空间20的中央部分20\'中的磁通密度。\n\n【0035】\n\n另一方面,当提供子磁体22时,副磁铁22的n极和主磁体12a(或计数器主磁体16a)的n极部分是收回的,因此它是从中央产生的C.不仅磁通量(磁力线M1)而且还可以通过中央部分C附近产生的磁通量(磁力线M2)穿过空间20的中心部分20\'。因此,可以特别提高空间20的中心部分20\'中的磁通密度。\n\n【0036】\n\n当以这种方式设置副磁体22时,为了形成如上所述的主磁体12a之间的磁场,磁磁铁22是凹口12c的上半部分(即,主磁铁12a它期望仅提供对应于N极部分的部分。因此,子磁体22的高度H2优选地是主磁体12a的高度H1的50%或更小。然而,为了获得收集空间20的中心部分20\'处的磁通量的效果,副磁体22需要具有一定的容积,并且主磁铁12a的高度H1中的10%或更多是可取的。子磁体22的高度有效地用作用于加强磁通量的磁体,如果它是主磁体12a的高度H1的约10%至66%。此外,为了有效地使用主磁体12a和12b的中心附近的磁通量,子磁体22将子磁铁的宽度W2设置为整个主磁铁的宽度W1的1%至30%是可取的。\n\n【0037】\n\n由如上所述配置的磁场形成装置200形成的磁场如图2所示。如图所示,由亚磁体22增强由主磁体12a和12b形成的由主磁体12a和12b形成的磁场,从而可以在该部分中形成相对高的磁场,以及副磁体14a并且在附近的14b,由于磁场干扰,几乎没有磁场在x轴方向上形成。因此,可以快速形成强度变化的磁场。\n\n【0038】\n\n优选胁迫性胁迫高于主磁体12a和12b的矫顽力\n\n胃。子磁体22是相对较小的体积并且具有要形成的磁场的小强度,因此它们受到来自主磁体12a和12b的磁场的强烈影响,但由于这种效果可防止出现退磁的发生子磁铁22.要做。\n\n【0039】\n\n示例和比较例\n\n图7是没有子磁体14a和14b或22的磁场形成装置(比较例),以及第一实施例的磁场形成装置100(示例1)和磁场形成装置200(例2)第二实施例。图。图7示出了当使用时沿y轴方向沿y轴方向改变x轴方向上的磁通密度时的曲线图。图中所示的位置P1对应于副磁体14侧的主磁体12a和12b的端面。此外,图中所示的位置P2对应于提供亚磁体14a和14b的位置。在图中,曲线图的右侧表示主磁体12a和12b,并且曲线图的左侧表示副磁体14a和14b。此外,如图2所示。如图3所示,磁通密度的测量穿过主磁体12a和12b的中心,并测量由虚线Br沿着y方向上的y方向指示的方向。空间20.正在做。使用由铃声制成的高斯测量磁通密度测量。\n\n【0040】\n\n从图中可以看出,在比较例中,在比较例中,代替获得强磁通密度,也观察到远离主磁体的点处的相对强的磁通密度,并且磁通密度不能充分降低。在该比较示例中,在主磁体的末端,只能形成由于一个mm而减小的小磁场减小0.04T。\n\n【0041】\n\n另一方面,在第一实施例中,即使主磁体12a和12b相对靠近亚磁体14a和14b的影响,磁通密度几乎可以是0。\n\n【0042】\n\n此外,在第二实施例中,由于子磁体22的影响,主磁体12a和12b侧的磁通密度可以相对较高,并且可以在位置附近获得相对高的磁通密度提供子磁铁22。。此外,由于副磁体14a和14b的影响,可以在距离磁磁体22的略微距离处充分降低磁通密度。作为测量的结果,在第二实施例中,形成主磁体12a和12b的端部(即,提供子磁铁22的部分)形成为形成大磁场,使得0.08 t的滴度是每毫米生成。我能够。以这种方式,可以提供具有强磁通密度的区域和具有弱磁通密度的区域紧密接近。\n\n【0043】\n\n【发明效果】\n\n根据本发明的磁场形成装置,可以在预定区域中形成具有高磁通密度的磁场,并且在预定区域附近的区域中具有非常小的磁通密度的磁场。\n\n[简要描述;简介]\n\n【图1】图3是表示本发明的实施方式1的磁场形成装置的结构的立体图。\n\n【图2】图3是表示本发明的实施方式1的磁场形成装置的另一结构的图。\n\n图3.图3是表示本发明的实施方式2的磁场形成装置的结构的立体图。\n\n图4.图3是表示本发明的实施方式2的磁场形成装置的一部分的结构的立体图。\n\n图5.图3是说明在本发明的实施方式2的磁场形成装置中形成的磁场的侧视图。\n\n6.图3是表示在本发明的实施方式2的磁场形成装置中形成的磁场的俯视图。\n\n图7.图3是测量比较例,实施例1和实施例2中的磁通密度的曲线图。\n\n[标志的说明]\n\n100,200磁场形成装置\n\n10个轭材料\n\n12A和12B主磁铁\n\n14A和14B子磁铁\n\n16A和16B面向主磁铁\n\n图18A和18B面向子磁体\n\n20个空间\n\n22个另外的亚磁铁');
INSERT INTO `os_patent_instruction_text` VALUES (12938, 22767, '【0001】\n\n【発明の属する技術分野】\n\n本発明は、粉末プレス装置および磁石の製造方法に関し、特に、希土類焼結磁石の製造方法およびそれに用いられる粉末プレス装置に関する。\n\n【0002】\n\n【従来の技術】\n\n現在、希土類焼結磁石として、希土類·コバルト系磁石と希土類·鉄·ボロン系磁石の二種類が各分野で広く用いられている。なかでも希土類·鉄·ボロン系磁石(以下、「R-\n\nT-(M)-B系磁石」と称する。RはYを含む希土類元素、TはFeまたはFeとCoおよび/またはNiとの混合物、Mは添加元素(例えば、Al、Ti、Cu、V、Cr、Ni、Ga、Zr、Nb、Mo、In、Sn、Hf、Ta、Wの少なくとも1種)、Bはボロンまたはボロンと炭素との混合物である。)は、種々の磁石の中で最も高い最大磁気エネルギー積を示し、価格も比較的安いため、各種電子機器へ積極的に採用されている。\n\n【0003】\n\n希土類焼結磁石の用途が広がるにつれ、多種多様な形状を持つ磁石を製造することが求められる。例えば高性能モータを製造するには、湾曲した面を持つ強力な異方性磁石が複数個必要である。このような異方性磁石を製造するには、磁界中で配向させた磁性粉末をプレスして、所望形状を持つ粉末成形体を作製する必要がある。モータ等の高性能の回転機には、断面がC字形または弓形の形状を持つ薄板磁石が複数個使用されている。回転機の性能を向上させるためには、磁石の磁力を強くするだけでは不充分であり、磁石の形状および磁石表面近傍における磁界の分布を設計通りのものとする必要がある。\n\n【0004】\n\n【発明が解決しようとする課題】\n\n従来、プレス装置における一対のパンチの加圧面(プレス面)の形状を湾曲させて、それによって粉末成形体の所望の湾曲面を付与してきた。従来のパンチは例えば超硬合金(例えばWC-Ni系)を用いて形成され、加圧面は鏡面加工されている。\n\n【0005】\n\nしかしながら、本発明者の実験によると、配向磁界中で磁性粉末を一軸プレスする際に、加圧面に鏡面加工された曲面が存在すると、磁性粉末の配向に乱れが生じ、その結果、充分な磁石特性が発揮されないことがわかった。この問題は、特に、プレス方向と配向磁界の向きが略同一方向である場合に顕著である。\n\n【0006】\n\n配向乱れが生じた成形体から永久磁石を作製し、その永久磁石によってモータを製造すると、モータのトルクに無視できないレベルのコギング(cogging)が発生してしまう。コギングトルクは、モータの磁気回路中の磁気抵抗がロータの回転位置に応じて変化することが原因で生じるトルク変動である。このトルク変動の大きさは通常小さいが、パワーステアリングなどのモータにトルクコギングが現れると、操作者によって敏感に感知されるという問題がある。このコギングトルクは、磁石の凸側(モータのコイル対向面側)において配向乱れが発生している場合により顕著となる。\n\n【0007】\n\n磁界によって配向させられた磁石粉末を一軸プレスする際に、磁性粉末の配向に乱れが生じるという上述の問題は、加圧面が湾曲している場合に限られず、一対の加圧面のうちのいずれか一方が、プレス方向に対して傾斜した領域を含む場合に発生し、種々の形状の磁石の製造において発生する。\n\n【0008】\n\nまた、磁性粉末をキャビティに充填する方法として、摺り切り法が広く用いられている。例えば特開2000-248301号公報に記載されているように、フィーダボックス(またはフィーダカップ)をキャビティ上にスライドさせ、フィーダボックス内の粉末の自重を利用してキャビティ内に充填し、フィーダボックス13内に設けたアジテータ(または「シェーカー」とも呼ばれる)などの加圧手段で充填され磁性粉末の上部を下方に加圧していた(例えば、特開2000-248301号公報参照)。\n\n【0009】\n\nこの摺り切り法を用いて充填された磁性粉末の表面は、ダイの表面(すなわちキャビティの底面)と平行にならず、アジテータの移動方向(またはフィーダボックスの移動方向)に沿って傾斜したり、うねりが形成されることがある。このような場合には、互いに平行な加圧面で磁性粉末をプレスする場合においても、上側加圧面(上パンチの表面)の少なくとも一部の領域は、磁性粉末の表面に対して傾斜した状態で接することになる。このような状態で、磁界配向させられた磁性粉末をプレスすると、上述したのと同様に、磁性粉\n\n末の圧縮に伴う移動によって加圧面の近傍の磁性粉末粒子の配向が乱れるという問題が発生する。\n\n【0010】\n\n本発明はかかる諸点に鑑みてなされたものであり、その目的は、磁性粉末の配向の乱れが抑制された磁性粉末成形体の作製に適したプレス装置を提供することおよび、磁性粉末の配向の乱れが抑制された磁石の製造方法を提供することにある。\n\n【0011】\n\n【課題を解決するための手段】\n\n本発明によるプレス装置は、キャビティを形成する貫通孔を有するダイと、前記キャビティ内に充填された磁性粉末をプレスするための第1加圧面および第2加圧面と、前記キャビティ内の前記磁性粉末に配向磁界を印加する磁界発生手段とを備えたプレス装置であって、前記第1および第2加圧面の少なくとも一方の加圧面は、ビッカース硬度が200超450以下の第1の材料で形成された第1領域を有することを特徴とし、そのことによって上記目的が達成される。\n\n【0012】\n\n前記少なくとも一方の加圧面は、前記第1の材料よりもビッカース硬度が高い第2の材料で形成された第2領域をさらに有してもよい。\n\n【0013】\n\nある実施形態において、前記少なくとも一方の加圧面は、プレス方向に対して傾斜した領域を含む。\n\n【0014】\n\n前記第1および第2の材料の透磁率は、1.01以下であることが好ましく、1.001以下であることが更に好ましい。\n\n【0015】\n\n前記第1の材料は、BeCu合金であることが好ましい。\n\n【0016】\n\n前記BeCu合金は、96.9質量%以上98.2質量%以下のCuと、1.6質量%以上2.0質量%以下のBeを含むことが好ましい。\n\n【0017】\n\nある実施形態において、前記少なくとも一方の加圧面は、湾曲した面である。\n\n【0018】\n\n本発明による磁石の製造方法は、磁性粉末を用意するする工程と、前記磁性粉末をキャビティ内に充填する工程と、前記キャビティ内の前記磁性粉末に配向磁界を印加することによって、前記磁性粉末を配向させる工程と、前記配向させられた磁性粉末を互いに対向する一対の加圧面の間で一軸プレスすることによって成形体を形成する工程であって、前記一対の加圧面の少なくとも一方は、前記充填された磁性粉末の表面および/またはプレス方向に対して傾斜した領域を含み、前記少なくとも一方の加圧面は、ビッカース硬度が200超450以下の第1の材料で形成された第1領域を有する、一軸プレス工程とを包含することを特徴とし、そのことによって上記目的が達成される。\n\n【0019】\n\n前記少なくとも一方の加圧面は、前記第1の材料よりもビッカース硬度が高い第2の材料で形成された第2領域をさらに有してもよい。\n\n【0020】\n\n前記第1および第2の材料の透磁率は、1.01以下であることが好ましく、1.001以下であることが更に好ましい。\n\n【0021】\n\n前記第1の材料は、BeCu合金であることが好ましい。\n\n【0022】\n\n前記BeCu合金は、96.9質量%以上98.2質量%以下のCuと、1.6質量%以上2.0質量%以下のBeを含むことが好ましい。\n\n【0023】\n\nある実施例において、前記少なくとも一方の加圧面は、湾曲した面である。\n\n【0024】\n\n前記一軸プレス工程は、断面がC字形または弓形の成形体を形成する工程であってもよい。\n\n【0025】\n\n好ましい実施形態において、前記磁性粉末は、摺り切り法によって前記キャビティに充填される。前記磁性粉末の平均粒径(FSSS粒径)は2μm以上10μm以下であることが好ましい。\n\n【0026】\n\nある実施形態において、前記配向磁界の方向は、前記プレス方向に平行である。前記配向磁界の強度は、0.5MA/m以上2.0MA/m以下であることが好ましい。前記配向磁界は、静磁界であっても良いし、パルス磁界であってもよい。\n\n【0027】\n\nある好ましい実施形態において、前記磁性粉末は、希土類合金粉末を含む。\n\n【0028】\n\n本発明によるモータは、上記のいずれかの製造方法によって製造された磁石を備える。\n\n【0029】\n\n【発明の実施の形態】\n\n本発明によるプレス装置は、キャビティ内で磁界配向させられた磁性粉末粒子を加圧する一対の加圧面の内の少なくとも一方の加圧面がビッカース硬度が200超450以下の材料(第1の材料)で形成された領域(第1領域)を有している。加圧面の第1領域は上記の範囲の硬度を有するので、磁性粉末粒子を加圧する際の力によって塑性変形し、加圧面の第1領域に磁性粉末粒子の形状に対応した微小な凹凸が形成される。加圧面の第1領域に形成された微小な凹凸は、磁性粉末粒子を捕らえて、その移動を妨げるように作用する。従って、配向乱れが生じやすい領域の加圧面を第1領域とすれば、加圧面の第1領域の近傍の磁性粉末粒子の配向乱れが抑制され、成形体内の粉末粒子を配向磁界の方向に平行に揃えることができる。少なくとも一方の加圧面が第1領域を有していればよく、第1領域以外の領域(第2領域)は第1の材料よりもビッカース硬度が高い材料(第2の材料)で形成してもよい。\n\n【0030】\n\n加圧面の近傍の磁性粉末粒子の配向乱れは、磁気的相互作用によって成形体内部の磁性粉末粒子にまで影響し、成形体内部の粉末粒子の配向方向が配向磁界の向きとは平行でなくなり、最終的な焼結磁石の磁気特性の低下を招くが、本発明によると、磁性粉末粒子の配向乱れを防止することができる。\n\n【0031】\n\n特に、配向磁界の方向とプレス方向とが一致する、いわゆる平行プレスにおいては、加圧面からの力によって、磁性粉末粒子は、プレス方向と直交する方向に移動させられやすく、その結果生じる配向乱れが焼結磁石の磁気特性に与える影響も大きいので、本発明のプレス装置を用いる効果が大きい。\n\n【0032】\n\nキャビティ内に充填された磁性粉末粒子が加圧面から受ける力によって移動しやすいのは、加圧面がプレス方向に対して傾斜した領域を有する場合、例えば、加圧面がプレス方向に対して傾斜した面である場合や、湾曲した面である場合である。なお、「加圧面がプレス方向に対して傾斜している」とは加圧面がプレス方向に直交していないことを意味する。\n\n【0033】\n\n特に、モータ用焼結磁石など、断面がC字形や弓形の形状を有するの成形体を製造する場合、一対の加圧面の両方が湾曲面であり、且つ、加圧面の形状(プレス方向における断面形状)は互いに異なるので、両方の加圧面において配向乱れが発生しやすい。このような\n\n場合には、両方の加圧面を上記範囲のビッカース硬度を有する材料で形成することが好ましい。\n\n【0034】\n\n一対の加圧面が互いに平行な平坦な面であっても、キャビティ内に充填された磁性粉末の表面が平坦でない場合には、加圧面が磁性粉末の表面に対して傾斜した状態で接することになるが、上記の範囲のビッカース硬度を有する材料で形成された加圧面を用いることによって、磁性粉末粒子の配向乱れを抑制することができる。従って、量産性に優れた摺り切り法を用いて磁性粉末材料をキャビティに充填した場合などに本発明の効果が得られる。\n\n【0035】\n\nなお、加圧面を形成している材料のビッカース硬度が450を超えると、十分に塑性変形することができず、配向乱れを抑制する効果が十分に得られなくなるおそれがある。また、ビッカース硬度が200以下であると成形体の外形が所定の形状からずれるので、成形体の外形を整えるための後加工に要する時間が増えたり、あるいは、加圧面の寿命が短くなるなどの問題が発生するおそれがある。成形体の形状精度、パンチ(加圧面)の寿命などを考慮すると、ビッカース硬度が250以上の材料を用いることがさらに好ましい。\n\n【0036】\n\n加圧面を透磁率が1.01以下の材料を用いて形成すると、この材料によって配向磁界が影響されないので、所定の方向の配向磁界をキャビティ内の磁石粉末に印加することができる。加圧面を形成する材料の透磁率は、1.001以下であることが更に好ましい。これに対し、例えば、SUS304(透磁率1.02〜1.06程度)を用いると、磁束密度がキャビティの中央部で高くなり、この部分に磁石粉末が集まり、配向乱れが発生しやすくなる。BeCu合金、特に、96.9質量%以上98.2質量%以下のCuと、1.6質量%以上2.0質量%以下のBeを含むBeCu合金を好適に用いることができる。\n\n【0037】\n\nBeCu合金は、超硬合金に比べ安いという利点もある。また、加圧面はプレス過程で塑性変形するので、その面を鏡面加工する必要が無く、放電加工等による形状加工肌の材料をそのまま用いることができるので、さらにコストを低減することができる。また、BeCuは機械加工性に優れるので、少量多品種の磁石を製造するためのパンチの材料に適している。なお、BeCuを用いても1000ショット程度のプレス成形を繰り返し実行することができる。\n\n【0038】\n\n以下、図面を参照しながら、本発明の実施形態を説明する。以下の実施形態では、一対の加圧面の両方が湾曲面である場合を例示するが、本発明はこの例に限られない。\n\n【0039】\n\n[プレス装置]\n\n図1(a)および(b)は、本実施形態の粉体プレス装置10の主要部を示している。図示されているプレス装置10は、キャビティを形成するための貫通孔(ダイホール)12aを有するダイ12と、貫通孔内において磁性粉末18を圧縮するための上パンチ14および下パンチ16とを備えている。上パンチ14の先端部の圧縮軸を含む断面形状は凸形状であり、下パンチ16の先端部の断面形状は凹形状である。ダイ12、上パンチ14、および下パンチ16から構成される金型セットは、不図示の駆動装置に接続され、プレス工程に必要な上下運動を行う。本実施形態におけるプレス装置10の基本的な動作は、公知のプレス装置の動作と同様にして実行される。\n\n【0040】\n\n本実施形態で使用する金型セットの形状は、図2に示すように弓形形状を持つ薄板希土類磁石20を製造するように設計されている。この希土類磁石20は、図2の矢印Aで示される方向(プレス方向)に平行に着磁される。図2に示される希土類磁石20は、例えば、モータやその他の回転機の部品として使用され得る。モータに用いられる場合、磁石20の形状は、コギングトルク低減のため、スキューが発生するように設計されることが好\n\nましい。\n\n【0041】\n\n再び図1(a)を参照する。\n\n【0042】\n\nキャビティは、下パンチ16の上部がダイ12の貫通孔12aに部分的に挿入された状態で下パンチ16の上部に形成され、このキャビティ内に磁性粉末18が充填される。キャビティは、下パンチ16の加圧面16aと貫通孔12aの内面とによって規定される成形空間である。\n\n【0043】\n\nキャビティ内への粉末充填は、内部に磁性粉末が充填されたフィーダボックス(不図示)をキャビティ上に移動させ、フィーダボックスの底(開口部)からキャビティ内に粉末を落下させることによって行う。重力落下だけでは粉末を均一に充填できないために、フィーダボックス内に設けたシェーカー(不図示)を水平方向に駆動して磁性粉末18をキャビティ内に押しこむことが好ましい(上記特開2000-248301号公報参照)。\n\n【0044】\n\nフィーダボックスがキャビティ上から退去する際、フィーダボックスの底部エッジによって磁性粉末18の上部をすり切り、それによって、成形すべき所定量の粉末18をキャビティ内へ精度良く充填することができる。このときに、充填された磁性粉末18の表面がダイ12の表面に対して部分的に傾斜することがある。\n\n【0045】\n\nプレス装置10に特徴的な点は、上パンチ14の加圧面14aと下パンチ16の加圧面16aは、BeCu合金(例えば、住友特殊金属製のBC-2)で形成されている。BeCu合金は200超450以下のビッカース硬度を有し、その透磁率は1.001以下の非磁性材料である。96.9質量%以上98.2質量%以下のCuと1.6質量%以上2.0質量%以下のBeを含むBeCu合金は、上記のビッカース硬度および透磁率の範囲を満足する。\n\n【0046】\n\n本実施形態のプレス装置10は、加圧面14aおよび16aの全領域がBeCu合金で形成されているので、後に詳述するように、磁性粉末18の配向乱れを効果的に抑制することができる。ここでは、加圧面14aおよび16aの全領域がBeCu合金で形成されている例を示すが、加圧面14aまたは16aの少なくとも一方の加圧面がBeCu合金で形成された領域(第1領域)を有せば、磁性粉末18の配向乱れを抑制する効果が得られる。\n\n【0047】\n\nなお、加圧面14aおよび16aの全領域がBeCu合金で形成する場合であっても、加圧面14aおよび16aがBeCu合金で形成されていればよく、上パンチ14および下パンチ16の全体をBeCu合金で形成する必要は無い。但し、十分な塑性変形量を得るためには、加圧面を含む厚さが2mm程度以上の部分をBeCu合金で形成することが好ましい。通常、所定の形状の加圧面をBeCu合金ブロックから形成すれば、上記条件は容易に満足される。BeCu合金は弾性を有しているので、上パンチ14および/または下パンチ16の側面と貫通孔12aの側面との間に5μmから60μm程度のクリアランスを設けることが好ましい。\n\n【0048】\n\nキャビティ内に磁性粉末18が充填された後、上パンチ14が降下し始める。上パンチ14の加圧面14aは、図1(b)に示されるように、下方の粉末18の上面を押圧する。磁性粉末18が上パンチ14、下パンチ16、およびダイ12によって完全に密閉された状態になった後、キャビティ内の粉末18に対して、不図示の磁界発生用コイルが配向磁界を印加する。磁束は上パンチ14および下パンチ16の内部に導かれ、キャビティ内部における配向磁界の向きは、プレス方向(上パンチの動作方向)に平行となる。この配向磁界によって、加圧されつつある粉末の粒子は磁界の向きに配向する。配向磁界の強度は\n\n、0.5MA/m以上2.0MA/m以下であることが好ましい。配向磁界は、静磁界であっても良いし、パルス磁界であってもよい。\n\n【0049】\n\n粉末に対して配向磁界が印加された状態で、上パンチ14および下パンチ16によってキャビティ内の磁性粉末が圧縮成形され、それによって粉末成形体24が形成される。プレス工程の過程では、加圧されている磁性粉末18の粒子は、その位置に応じて異なる応力(圧力)を受けることになる。成形体24が形成された後、上パンチ14が上昇し、下パンチ16が成形体24を押し上げることによって、成形体24がダイホール12aから抜き出される。\n\n【0050】\n\n図3(a)は、従来のプレス装置によるプレス工程の初期段階における磁性粉末の粒子18aの配向状態を模式的に示している。図3(b)は、そのプレス工程の後期段階における粉末粒子18aの配向状態を模式的に示している。\n\n【0051】\n\n配向磁界中に置かれた磁性粉末の個々の粒子18aは、配向磁界の向きに配向するとともに、他の粉末粒子18aと磁気的に強く結合している。その結果、図3(a)に示されるように、複数の粉末粒子18aが配向磁界の向きに沿って一列に配向する。配向磁界を印加しながら、上パンチ14’と下パンチ16’との距離を減少させると、パンチ面14a’および16a’が曲面を有しているため、加圧されつつある粉末の各部に不均一な圧力(応力)が加わる。加圧面14a’および16a’が、はるかに硬い超硬合金で形成され、鏡面加工された平滑面であると、図3(b)に示されるように、平滑な加圧面14a’および16a’上を粉末粒子が横方向(プレス方向に直角な成分を含む方向)に滑り、その結果、配向の向きがずれてしまうことになる。\n\n【0052】\n\nこれに対し、本実施形態では、図4(a)および(b)に示されるように、加圧面近傍での粉末粒子の滑りを抑制し、それによって配向の乱れを防止することができる。これは、上下パンチ14および16のBeCu合金で形成された加圧面14aおよび16aが、粉末粒子18aから受ける力によって塑性変形する。その結果、図5に模式的に示すように、BeCu合金で作製されている下パンチ16の加圧面16aには、微小な凹凸が形成される。この凹凸を表面粗度Raで表すと、0.05μm〜12.5μmの範囲内にある。図5には加圧面16aを示しているが、加圧面14aにも同様の凹凸が形成される。加圧面14aおよび16aに形成された微小な凹凸が粉末粒子18aの滑りを抑制することで、配向の乱れを防止することができる。\n\n【0053】\n\n前述したように、磁界中の磁性粉末粒子18aは相互に磁気結合しているため、キャビティ内部における粉末粒子の運動も、加圧面14aおよび16a近傍における粉末粒子の運動に強く影響される。このため、加圧面14aおよび16aがそれに接触する粉末粒子18aの形状に応じて塑性変形するだけで、キャビティ内の粉末粒子18aの全てについて、その配向度の低下を抑制することができる。\n\n【0054】\n\nなお、得られた成形体24の表面には、加圧面14aおよび16aの凹凸が転写されることになるが、必要に応じて、その後に磁石表面を研磨することによって、転写構造を容易に除去し平滑化することができる。\n\n【0055】\n\n上記の実施形態では、加圧面14aおよび16aの全領域をBeCu合金で形成したが、図6(a)から(d)に示すように、加圧面16aの一部の領域(第1領域)16bをBeCu合金で形成し、他の領域(第2領域)16cを非磁性超硬合金(例えばWC-Ni、ビッカース硬度:1200、透磁率:1.0003)または高マンガン鋼(ビッカース硬度:460、透磁率:1.004)で形成しても良い。もちろん、加圧面14aについても加圧面16a同様に第1領域と第2領域とを設けても良い。\n\n【0056】\n\n第2の領域16cを形成する材料のビッカース硬度は第1領域を形成する材料よりも高く、450超であってよもよく、好ましくは、700以上である。ビッカース硬度が700以上の材料を用いると、連続使用による磨耗などが少ないので、第1領域だけを形成し直すことによって、繰り返し利用することができる。なお、上述したように、加圧面16aは透磁率が1.01以下の材料で形成されていることが好ましいので、第2領域16cも透磁率が1.01以下の材料を用いることが好ましい。もちろん、透磁率は1.001以下であることが更に好ましい。\n\n【0057】\n\n加圧面16aにおける第1領域16bおよび第2領域16cの配置は、種々のパターンであってよく、例えば、図6(a)〜(d)に示すパターンを例示することができる。図6(a)に示したように、複数の小さな島状の第1領域16bを加圧面16aの前面に均一に配置してもよいし、図6(b)〜(d)に示すように、磁性粒子の配向乱れが生じやすい領域に、選択的に、あるいは、集中的に、第1領域16bを配置しても良い。複数の第1領域16bを設ける場合は、個々の第1領域16bの大きさや形状には特に制限は無く、加圧面16aの形成方法に応じて適宜設定すればよい。\n\n【0058】\n\n磁性粒子の配向乱れの発生しやすい領域は、加圧面16a(および/または加圧面14a)の形状、配向磁界の方向とプレス方向との関係、さらには摺り切り法を用いて充填する際のアジテータの移動方向などによって異なるので、これらに応じて、第1領域16bを設ける領域を設定すればよい。なお、例示した平行プレスにおいては、加圧面16aのうち傾斜角が大きい周辺領域において配向乱れが生じやすいので、図6(b)から(d)では、加圧面16aのそのような領域に第1領域16bを設けている。ここで、加圧面16aの傾斜角は、プレス方向に直交する面(一般的には水平面)を基準面として求められる。\n\n【0059】\n\n加圧面16aに第1領域16bを形成する方法は、例えば、第2領域16cを形成する材料(例えば非磁性超硬合金)で下パンチ16の本体部分を形成した後で、第1領域16bとなる部分に穴または溝を形成し、その穴または溝にBeCu合金を圧入あるいは溶接する方法を用いることが出来る。なお、粉末粒子の配向乱れを抑制するためには、第1領域16bを形成するBeCu合金の厚さは、数μm程度以上あればよく、十分な塑性変形量を得るためには2mm以上あることが好ましい。第1領域16bを形成する方法などに応じて、適宜設定すればよい。\n\n【0060】\n\nなお、モータに用いられるC字形や弓形の成形体を作製する場合には、上述したように、成形体の凸面側を形成する加圧面16aの少なくとも一部をBeCu合金で形成すれば、配向乱れを抑制することによるコギングトルクの低減効果を得ることができる。\n\n【0061】\n\n[合金粉末の製造方法]\n\n本発明は、希土類焼結磁石の製造に好適に用いられ、特に、R-T-(M)-B系の高性能希土類焼結磁石の製造において効果的である。\n\n【0062】\n\n公知のストリップキャスト法を用いてR-T-(M)-B系希土類磁石合金の鋳片を作製する。具体的には、まず、Nd:30wt%、B:1.0wt%、Dy:1.2wt%、Al:0.2wt%、Co:0.9wt%、残部Feおよび不可避不純物からなる組成の合金を高周波溶解によって溶融し、合金溶湯を形成する。この合金溶湯を1350℃に保持した後、単ロール法によって、合金溶湯を急冷し、厚さ0.3mmのフレーク状合金鋳塊を得ることができる。このときの急冷条件は、例えば、ロール周速度約1m/秒、冷却速度500℃/秒、過冷度180℃とする。急冷速度は、102℃/秒〜104℃/秒に設定される。\n\n【0063】\n\nこのようにして形成された急冷合金の厚さは0.03mm以上10mm以下の範囲にある。この合金は、短軸方向サイズが0.1μm以上100μm以下で長軸方向サイズが5μm以上500μm以下のR2T14B結晶粒と、R2T14B結晶粒の粒界に分散して存在するRリッチ相とを含有し、Rリッチ相の厚さは10μm以下である。ストリップキャスト法による原料合金の製造方法は、例えば、米国特許第5,383,978に開示されている。R-T-(M)-B系希土類磁石用合金粉末は、細長い(アスペクト比が大きい)形状を有しているので、圧縮時における流動性(成形性)が悪い。\n\n【0064】\n\n次に、粗粉砕された原料合金を複数の原料パックに充填し、ラックに搭載する。この後、前述の原料搬送装置を用いて、原料パックが搭載されたラックを水素炉の前まで搬送し、水素炉の内部へ挿入する。そして、水素炉内で水素粉砕処理を開始する。原料合金は水素炉内で加熱され、水素粉砕処理を受ける。粉砕後、原料合金の温度が常温程度に低下してから原料の取り出しを行うことが好ましい。しかし、高温状態(例えば40〜80℃)のまま原料を取り出しても、原料が大気と接触しないようにすれば、特に深刻な酸化は生じない。水素粉砕によって、希土類合金は0.1〜1.0mm程度の大きさに粉砕される。なお、合金は、水素粉砕処理の前において、平均粒径1〜10mmのフレーク状に粗粉砕されていることが好ましい。\n\n【0065】\n\n水素粉砕後、ロータリクーラ等の冷却装置によって、脆化した原料合金をより細かく粉砕するとともに冷却することが好ましい。比較的高い温度状態のまま原料を取り出す場合は、ロータリクーラ等による冷却処理の時間を相対的に長くすれば良い。\n\n【0066】\n\nロータリクーラ等によって室温程度にまで冷却された原料粉末に対して、ジェットミルなどの粉砕装置を用いて更なる粉砕処理を行い、原料の微粉末を製造する。磁気特性等の観点から、微粉末の平均粒径(FSSS粒径)は2μm以上10μm以下であることが好ましい。本実施形態では、ジェットミルを用いて窒素ガス雰囲気中で微粉砕し、平均粒径が約3.5μmの合金粉末を得る。この窒素ガス雰囲気中の酸素量は10000ppm程度に低く抑えることが好ましい。このようなジェットミルは、特公平6-6728号公報に記載されている。微粉砕時における雰囲気ガス中に含まれる酸化性ガス(酸素や水蒸気)の濃度を制御し、それによって、微粉砕後における合金粉末の酸素含有量(重量)を6000ppm以下に調整することが好ましい。希土類合金粉末中の酸素量が6000ppmを超えて多くなりすぎると、磁石中に非磁性酸化物の占める割合が増加し、最終的な焼結磁石の磁気特性が劣化してしまうからである。\n\n【0067】\n\n次に、この合金粉末に対し、ロッキングミキサー内で潤滑剤を例えば0.3wt%添加·混合し、潤滑剤で合金粉末粒子の表面を被覆する。潤滑剤としては、脂肪酸エステルを石油系溶剤で希釈したものを用いることができる。本実施形態では、脂肪酸エステルとしてカプロン酸メチルを用い、石油系溶剤としてはイソパラフィンを用いる。カプロン酸メチルとイソパラフィンの重量比は、例えば1:9とする。このような液体潤滑剤は、粉末粒子の表面を被覆し、粒子の酸化防止効果を発揮するとともに、プレス時の配向性および粉末成形性(成形体の抜き出し易さ)を向上させる機能を発揮する。\n\n【0068】\n\nなお、潤滑剤の種類は上記のものに限定されるわけではない。脂肪酸エステルとしては、カプロン酸メチル以外に、例えば、カプリル酸メチル、ラウリル酸メチル、ラウリン酸メチルなどを用いても良い。溶剤としては、イソパラフィンに代表される石油系溶剤やナフテン系溶剤等を用いることができる。潤滑剤添加のタイミングは任意であり、微粉砕前、微粉砕中、微粉砕後の何れであっても良い。液体潤滑剤に代えて、あるいは液体潤滑剤とともに、ステアリン酸亜鉛などの固体(乾式)潤滑剤を用いても良い。\n\n【0069】\n\nなお、本方法で製造した粉末は粒度分布がシャープであるため流動性が悪く、配向方向と同方向に圧縮すると、一般に、プレス時に配向が乱れやすい傾向にある。また、脂肪酸エステルなどの潤滑剤の添加によって各粒子の配向が容易に達成されやすくなるが、粉末流動性が悪くなるため、プレスに伴って配向の乱れが生じやすくなる。さらに、高い磁気特性を得るために、例えば0.8T〜2.0Tの高い配向磁界を印加すると、その配向乱れが顕著となる。従って、本実施形態の場合、BeCu合金で形成された加圧面を有するプレス装置を用いる効果が顕著に発揮される。\n\n【0070】\n\n[希土類磁石の製造方法]\n\nまず、図1に示すプレス装置を用い、上述の方法で作製した磁性粉末を配向磁界中で成形する。このプレス成形が終了した後、形成された粉末成形体は下パンチ16によって押し上げられ、プレス装置の外部へ取り出される。この時点における成形体の表面(加圧面14aおよび16aに接触していた面)には、プレス工程において加圧面14aおよび加圧面16aに形成された微小な凹凸を反映したパターンが転写されている。本実施形態によれば、図4(b)に示されるように、配向に乱れの少ない粉末成形体が得られる。\n\n【0071】\n\nなお、成形体をダイから取り出すときの離型性を高めるために、粉末充填の前に、加圧面に対して離型剤を塗布·散布しておいてもよい。離型剤としては、脂肪酸エステルを溶剤で希釈したものが好適に用いられる。脂肪酸エステルとしては、具体的には、カプロン酸メチル、カプリル酸メチル、ラウリル酸メチル、ラウリン酸メチルなどが挙げられる。溶剤としては、イソパラフィンに代表される石油系溶剤などを用いることができ、脂肪酸エステル:溶剤を1:20〜1:1の重量比で混合したものが用いられる。脂肪酸としてアラキジン酸が1.0wt%以下で含まれていてもよい。\n\n【0072】\n\n次に、成形体は、焼結用台板(厚さ:0.5〜3mm)に載せられる。台板は、例えばモリブデン材料から形成されている。成形体24は、台板とともに焼結ケースへ搭載される。成形体24を搭載した焼結ケースは焼結炉内に移送され、その炉内で公知の焼結処理を受ける。成形体は焼結プロセスを経て、焼結体に変化する。\n\n【0073】\n\n次に、必要に応じて焼結体の表面に対する研磨加工を行う。焼結直後における焼結体の表面には、加圧面14aおよび16aの微小な凹凸に対応した表面パターンが残存している。この表面パターンの一部または全部が研磨工程によって除去してもよい。研磨加工の後、または研磨加工に代えて、焼結体表面を樹脂膜等によって覆う工程を実行しても良い。このようにして、最終的な製品、すなわち希土類磁石が製造される。\n\n【0074】\n\n以上、モータ等の回転機に好適に用いられ得る形状の希土類磁石について、本発明の実施形態を説明してきたが、本発明は、これに限定されるものではない。\n\n【0075】\n\n図2に示される磁石は、上面および下面がともに湾曲しているが、何れか一方の面だけが湾曲している場合でも、本発明の効果が充分に得られる。その場合、湾曲していない平坦面を形成する側のパンチ加圧面は、従来と同じ材料(例えば超硬合金)を用いて構成されていても良い。\n\n【0076】\n\nまた、図1(a)を参照しながら説明したように、摺り切り充填法によってキャビティに充填された磁性粉末18の表面は、ダイ12の表面に対して平坦にならず、ある方向に偏ったり、うねりを生じたりする。このような場合には、一対の加圧面が互いに平行な平坦な面であっても、加圧面が磁性粉末の表面に対して傾斜した状態で接することになるので、従来の超硬合金等を鏡面加工された加圧面を用いると配向乱れの問題が発生する。しかしながら、BeCuを用いて形成された加圧面を有するプレス装置を用いると、上述したのと同様のメカニズムで、磁性粉末粒子の配向乱れを抑制することができる。\n\n【0077】\n\n(実施例および比較例)\n\n図1に示したように、BeCu合金(例えば、住友特殊金属製のBC-2)で形成された加圧面14aおよび16aを有するパンチを備えたプレス装置10を用いて希土類合金粉末に対するプレス成形を行った。本実施例では、図2の矢印B方向に沿って測定した長さが40mm、矢印A方向に沿って計測した厚さが中央部で7mm、端部で4mm、矢印AおよびBの両方に垂直な方向に沿って測定した幅が35mmのサイズを持つ成形体を作製した。成形体密度は4.30g/cm3とし、配向磁界(約1MA/m)はプレス方向(矢印A)に対して平行に印加した。その後、成形体に対して、アルゴン雰囲気のもと、1050℃で2時間の焼結処理を実行し、磁石を作製した。この磁石に対して着磁処理を行った後、磁石表面近傍における磁束密度分布を測定した。\n\n【0078】\n\n比較のため、従来の超硬合金を用いて形成された加圧面を有するパンチを備えたプレス装置によっても、同様のプレス工程を行い、比較例の磁石を作製した。\n\n【0079】\n\n本実施例について測定された磁束密度分布は、比較例の磁束密度分布に比べて優れたものであり、配向度の低下に起因する分布の異常は観察されなかった。\n\n【0080】\n\n次に、本実施例の磁石を用いて作製したモータについて、コギングトルクを測定した。測定結果を図7(a)に示す。比較のため、比較例の磁石から構成したモータについてもコギングトルクを測定した。測定結果を図7(b)に示す。\n\n【0081】\n\n図7(a)および図7(b)から明らかなように、本実施例のモータのコギングトルクは、比較例のモータのコギングトルクよりも充分に小さい。本発明によってモータのコギングトルクが低減する理由は、プレス工程中に成形体中に配向乱れが生じにくくなったことにある。\n\n【0082】\n\n【発明の効果】\n\n本発明のプレス装置によれば、加圧面の少なくとも一部が適度なビッカース硬度を有する材料から形成されているので、配向磁界中で粉末プレスを実行する際、粉末粒子が加圧面上を滑ることが抑制され、それによって粉末配向の乱れを防止することができる。\n\n【0083】\n\nこのようなプレス装置を用いて形成された粉末成形体では、均一な配向が達成され、この成形体を用いて作製した希土類磁石は優れた磁気特性を有する。\n\n【0084】\n\n本発明の方法によって製造した磁石を用いてモータを組み立てると、コギングトルクを低減することができる。\n\n【図面の簡単な説明】\n\n【図1】(a)および(b)は、実施形態の粉体プレス装置10の主要部を示す模式図である。\n\n【図2】本発明の実施形態で製造する弓形形状希土類磁石の斜視図である。\n\n【図3】(a)は、従来のプレス装置によるプレス工程の初期段階における粉末の状態を模式的に示す断面図であり、(b)は、そのプレス工程の後期段階における粉末の状態を模式的に示す断面図である。\n\n【図4】(a)は、実施形態のプレス装置によるプレス工程の初期段階における粉末の状態を模式的に示す断面図であり、(b)は、そのプレス工程の後期段階における粉末の状態を模式的に示す断面図である。\n\n【図5】実施形態のプレス装置のプレス工程後の下パンチ16を模式的に示す斜視図である。\n\n【図6】(a)から(d)は、本発明の実施形態で用いられる下パンチ16を模式的に示\n\nす斜視図である。\n\n【図7】(a)は、実施例の磁石を用いて作製したモータについてのコギングトルクを示すグラフであり、(b)は、比較例の磁石から構成したモータについてのコギングトルクを示すグラフである。\n\n【符号の説明】\n\n10      プレス装置\n\n12      ダイ\n\n14      上パンチ\n\n14a    上パンチの加圧面\n\n16a    下パンチの加圧面\n\n16      下パンチ\n\n18      キャビティ\n\n20      弓形磁石\n\n24      成形体', '【0001】\n\n技术领域\n\n本发明涉及一种粉末压机设备和制造磁铁的方法,以及更具体地涉及制造稀土类烧结磁体的制造方法和粉末压机用于此。\n\n【0002】\n\n发明背景\n\n目前,有两种类型的稀土元素,钴基磁体和稀土 - 铁和基于硼的磁体的被广泛用作稀土烧结磁体。其中,稀土,铁,硼基磁体(下文中称为“R-\n\nT-(M)-B-B莫雷特埃切。 R是含Y的稀土元素,T是Fe或者Fe和CO和/或Ni,M是添加元素(例如,铝,钛,铜,钒,铬,镍,镓,锆,铌的混合物,沫,在铟,锡,铪,钽,W)的至少一种,B为硼或硼和碳的混合物。由于价格是在不同的磁体最高的最大磁能积,并且价格也比较低,所以它们被积极采取各种电子设备。\n\n【0003】\n\n稀土的应用烧结磁体差,需要生产具有各种形状的磁体。例如,为了产生高性能的电动机,多个具有曲面强大各向异性磁体是必需的。为了制造这样的各向异性磁铁,有必要按在磁场中定向,以产生具有所需形状的粉末成形体的磁性粉末。多个具有C形或弓形形状薄板磁体被用作高性能旋转电机如电动机。为了改善旋转机械的性能,它是通过加强磁铁的magnetity不足,有必要设计附近的磁体的形状和磁铁的表面的磁场的分布。\n\n【0004】\n\n本发明要解决的问题\n\n以往,在冲压装置的一对冲头的压力面(压制表面)的形状已被弯曲,由此施加一粉末成形体的所需曲面。常规冲头利用形成,例如,硬质合金(例如,WC-Ni系),以及加压表面是镜面加工。\n\n【0005】\n\n然而,根据本发明人的实验,当磁性粉末的弯曲表面是当存在时的磁性粉末在取向磁场按压第一轴线,所述磁性粉末的取向的紊乱发生,并且作为结果,足够的磁铁原来的特性不施加。此问题是特别显着的时候按方向的方向与取向磁场基本相同。\n\n【0006】\n\n当永磁体从在其中取向紊乱发生的成型体生产的,和电动机是由它的永久磁铁制造,该齿槽的电平不能由产生所述马达的转矩忽略。齿槽转矩是发生由于在电机的磁路磁阻根据转子的旋转位置而变化的扭矩波动。尽管这种扭矩波动的大小通常较小,有一个问题,即当转矩在电动机诸如动力转向齿槽出现时,它是向操作者敏感。当取向混乱对磁体(电动机的线圈相对面侧)的凸侧时发生此齿槽转矩变得更加显着。\n\n【0007】\n\n当单轴压制面向磁铁粉末的磁铁粉末中,当加压表面是弯曲的上述问题,即扰动是由磁性粉末的取向造成的没有限制,并且任何一对加压面。另一方面的,发生时相对于按压方向倾斜的区域中产生,发生在磁体的各种形状的制造。\n\n【0008】\n\n另外,作为填充空腔到空腔的方法,一个方法slearing被广泛使用。例如,如在JP-A-2000-248301,供料箱(或馈送器杯)中描述的滑动在腔和填充在使用供料箱的粉末的重量的空腔中,和供料箱13的上磁性粉末的一部分被向下压力装置如搅拌器加压(或称为“振动筛”)在内部设置(参见,例如,JP-A-2000-248301)。\n\n【0009】\n\n填充有本slearing方法的磁性粉末的表面不平行于所述管芯的表面(即,空腔的底部),以及沿着所述搅拌器的运动的方向(或供料箱的方向上),A倾斜膨胀可以形成。在这种情况下,至少在至少上压力表面(上冲头表面)的至少一部分即使在这样的情况下倾斜相对于所述磁性粉末的表面的上压力表面(上冲头表面)的一部分磁性粉末被压在表面相互平行的压力,这将是在接触。在这样的状态下,当磁性粉末是由面向被压磁场,磁性粉末,如上所述\n\n一个问题,即压力面附近的磁性粉末颗粒的取向是由于端部的端部的端部干扰由于运动。\n\n【0010】\n\n本发明是鉴于这些问题而完成的,并且本发明的目的是提供一种适合于制造磁性粉末成形体,其中所述磁性粉末的取向的紊乱被抑制,的取向的推压装置本发明的磁性粉末的目的是提供一种制造在其中的干扰得到抑制的磁体的方法。\n\n【0011】\n\n[解决问题的手段]\n\n根据本发明的压力装置是具有贯通孔形成在所述腔的腔体和用于挤压填充在空腔中的磁性粉末的第一加压表面和第二加压表面,并且所述磁性粉末的模具。提供的冲压装置一磁场发生装置用于施加取向磁场,并且所述第一和第二加压表面中的至少一个是具有200或少于450。它的特征是具有第一区域中的维氏硬度,由第一材料形成,其实现由上述目的得以实现。\n\n【0012】\n\n的至少一个加压表面可以进一步包括具有更高的维氏硬度比所述第一材料的第二材料形成的第二区域。\n\n【0013】\n\n在一个实施例中,至少一个加压表面包括相对于按压方向倾斜的区域。\n\n【0014】\n\n所述第一和第二材料的磁导率优选为1.01或以下,更优选为1.001或更小。\n\n【0015】\n\n所述第一材料优选为BECU合金。\n\n【0016】\n\n所述BECU合金优选含有质量以上和98.2%96.9质量%以下的Cu和1.6%为按质量计以上且2.0质量%以下。\n\n【0017】\n\n在一个实施例中,至少一个加压表面是弯曲表面。\n\n【0018】\n\n根据本发明的磁铁的制造方法是指制备磁性粉末和填充磁性粉末进入空腔,并通过在腔中施加定向磁场的磁性粉末的磁性粉末的步骤的步骤。形成的步骤成型体通过一个轴按压定向,并且定向磁性粉末的步骤是通过单轴所述一对加压表面,所述一对加压面中的至少一个之间压制而形成为相对于倾斜表面上和/或按A区域磁性粉末的方向,并且所述至少一个加压表面具有具有200或更小的维氏硬度的第一材料形成的第一区域,它的特点是包括一个单轴压制步骤,其取得由上述目的是实现。\n\n【0019】\n\n的至少一个加压表面可以进一步包括具有更高的维氏硬度比所述第一材料的第二材料形成的第二区域。\n\n【0020】\n\n所述第一和第二材料的磁导率优选为1.01或以下,更优选为1.001或更小。\n\n【0021】\n\n所述第一材料优选为BECU合金。\n\n【0022】\n\n所述BECU合金优选含有质量以上和98.2%96.9质量%以下的Cu和1.6%为按质量计以上且2.0质量%以下。\n\n【0023】\n\n在一个实施例中,至少一个加压表面是弯曲表面。\n\n【0024】\n\n单轴压制步骤可以是形成一个C形的一个步骤或弓形模塑制品。\n\n【0025】\n\n在一个优选的实施例中,磁性粉末填充与由滑移方法的空腔中。磁性粉末的平均粒径(FSSS粒径)优选为2μm以上且10μm以下。\n\n【0026】\n\n在一个实施例中,取向磁场的方向是平行于压力机方向。定向磁场的强度优选为0.5毫安/ m以上且2.0毫安/ m以下。取向磁场可以是静磁场或脉冲磁场。\n\n【0027】\n\n在一个优选的实施例中,磁性粉末包括稀土合金粉末。\n\n【0028】\n\n根据本发明的电动机包括由上述任何一种制造方法所制造的磁铁。\n\n【0029】\n\n发明内容\n\n根据本发明的压制装置是具有通过在腔内(第一材料)中的磁场导向的磁性粉末状颗粒加压而获得的一对加压表面的压力表面的材料的压力表面,其具有由腔体(第一材料)中的磁场磁性粉末状颗粒获得形成一个区域(第一区域)。由于压力表面的第一区域在上述范围内具有硬度,因此在加压磁粉颗粒时的力塑性变形塑性变形,并且对应于磁粉颗粒的形状的微小不规则形成加压表面的第一个区域。它将完成。在加压表面的第一区域形成的微小不均匀性作用以捕获磁粉颗粒并干扰运动。因此,如果可能发生取向湍流的区域的压力表面,则抑制了加压表面的第一区域附近的磁粉颗粒的对准障碍,并且模制体中的粉末颗粒平行到定向磁场的方向。可以对齐。至少一个加压表面可以具有第一区域,并且除了第一区域之外的区域(第二区域)由具有较高的维氏硬度的材料(第二材料)形成而不是第一材料。它也很好。\n\n【0030】\n\n加压表面附近的磁粉颗粒的对准干扰通过磁相互作用影响模制体内的磁粉颗粒,并且模塑主体内的粉末颗粒的取向方向与所取向的方向不平行磁场取向。尽管最终烧结磁体的磁性减少,但根据本发明,可以防止磁粉颗粒的取向障碍。\n\n【0031】\n\n特别地,在所谓的并联压机中,其中取向磁场的方向与按压表面匹配,磁粉颗粒在与压力机方向正交的方向上容易地移动,并且产生的取向干扰是因为影响烧结磁体的磁特性也很大,使用本发明的压制装置的效果很大。\n\n【0032】\n\n当填充在腔中的磁粉颗粒通过从加压表面接收的力容易地移动时,当压力表面具有相对于压力机方向倾斜的区域,例如,所压加压表面相对于的表面倾斜压力方向是弯曲表面或弯曲表面的情况。注意,“按压表面相对于压力方向倾斜”是指加压表面与压力机方向不正交。\n\n【0033】\n\n特别地,在制造具有C形或弧形的模制体的情况下,例如用于电动机的烧结磁体,一对加压表面都是弯曲表面,以及加压表面的形状(交叉在压力方向上的截面)由于形状彼此不同,因此在加压表面中可能发生对准干扰。像这样\n\n在一些情况下,优选形成在上述范围内具有维氏硬度的加压表面。\n\n【0034】\n\n即使一对加压表面彼此平行,填充在腔中的磁粉的表面也不是平坦的,并且加压表面相对于表面与磁性粉末的表面接触磁粉。虽然它变成了,但是通过使用由上述范围内的维氏硬度的材料形成的加压表面,可以抑制磁粉颗粒的对准湍流。因此,当使用优异的质量生产率优异地填充磁粉材料时,可以获得本发明的效果。\n\n【0035】\n\n如果形成压力表面的材料的维氏硬度超过450,则不能充分塑性变形,并且可能无法充分获得抑制取向扰动的效果。另外,当维氏硬度为200或更小时,模制体的外形偏离预定形状,因此在调节模制体的外部形状之后加工所需的时间增加,或加压表面的寿命缩短了。有问题的风险。进一步优选的是考虑到模制体的形状精度,冲头(加压表面)等的寿命,使用具有250或更大的维氏硬度的材料。\n\n【0036】\n\n当使用具有1.01或更小的渗透性的材料形成加压表面时,取向磁场不受该材料的影响,使得可以将预定方向上的定向磁场施加到腔内的磁体粉末。形成加压表面的材料的渗透率更优选为1.001或更低。另一方面,当使用SUS304(约1.02至1.06个渗透率)时,磁通密度在腔的中心部分处变高,并且在该部分收集磁体粉末,并且可能对准干扰发生。 BECU合金,特别是Cu为96.9质量%以上和98.2质量%以下,并且可以适当地使用含有1.6质量%以上的1.6质量%和2.0质量%以下的Becu合金。\n\n【0037】\n\nBECU合金也具有比硬质合金便宜的优点。此外,由于压力表面在按压过程中塑性变形,因此不需要镜面表面,并且可以根据其使用放电加工的形状加工皮肤的材料,并且可以进一步降低成本。此外,由于Becu在机械中非常出色,因此它适用于生产小体积多种磁体的冲头材料。此外,即使使用ECCU,也可以重复按压成形约1000次截图。\n\n【0038】\n\n在下文中,将参考附图描述本发明的实施例。在以下实施例中,尽管这两对加压表面都是弯曲表面,但是本发明不限于该示例。\n\n【0039】\n\n按设备\n\n图。图1A和1B示出了本实施例的粉末压榨装置10的主要部分。所示的压制装置10包括具有用于形成腔的通孔(管孔)12a的芯片12,以及用于将磁粉18压缩在通孔中的上冲头14和下冲头16。有。包括上冲头14的尖端的压缩轴的横截面形状是凸形的,并且下冲头16的尖端的横截面形状是凹形的。由下冲头16组成的模具12,上冲头14和模具组连接到驱动装置(未示出),并且执行压制过程所需的垂直移动。以与已知的压力机装置的操作相同的方式执行本实施例中的压力装置10的基本操作。\n\n【0040】\n\n在本实施例中使用的模具组的形状被设计为制造具有弧形形状的薄板稀土磁体20,如图2所示。稀土磁体20平行于图1的箭头A所示的方向(压力方向)磁化。图2中所示的稀土磁体20包括:例如,可以使用例如电动机或其他旋转机器的部件。当在电动机中使用时,磁体20的形状优选地设计成使歪斜产生齿槽扭矩\n\n浑。\n\n【0041】\n\n再次参考图1(a)。\n\n【0042】\n\n腔在下冲头16的顶部形成在下冲头16的上部部分地插入管芯12通孔12a中,并且磁粉18填充在腔中。腔是由下冲头16的压力表面16a和通孔12a的内表面限定的模制空间。\n\n【0043】\n\n通过移动填充有磁性粉末的馈电箱(未示出)来执行填充到腔中的粉末,并将粉末从进料箱(开口)的底部落入腔体。由于粉末下降仅均匀地填充粉末,因此优选地驱动在水平方向上的送料箱中设置的振动器(未示出),以将磁粉18推入腔中(第二级200-248301见还。\n\n【0044】\n\n当馈线箱从腔缩回时,可以用磁粉末18的上部处理进料器箱的顶部边缘,从而精确地将预定量的粉末18填充到腔中。此时,填充的磁粉末18的表面可以相对于模具12的表面部分倾斜。\n\n【0045】\n\n就按压装置10而言,上冲头14的压力表面14a和下冲头16的压力表面16a由BECU合金(例如,由Sumitomo特殊金属制成的BC-2)形成。 Becu合金的维氏硬度超过200或小于450,其渗透性是1.001或更小的非磁性材料。 96.9质量%以上和98.2质量%或更低的Cu和1.6重量%或更多,体积%或更低的Becu合金满足上述维氏硬度和渗透率范围。\n\n【0046】\n\n由于加压表面14a和16a的整个区域由Becu合金形成,所以本实施例的压制装置10可以有效地抑制磁粉18的对准障碍,如稍后详细描述的。这里,尽管加压表面14a和16a的整个区域由Becu合金形成,但是由Becu合金(第一区域)形成加压表面14a或16a的至少一个的加压表面换句话说可以获得抑制磁性粉末18的对准障碍。\n\n【0047】\n\n即使加压表面14a和16a的整个区域由becu合金形成,加压表面14a和16a也可以由becu合金形成,并且整个上冲头14和下冲头16是becu合金。有不需要形成。然而,为了获得足够的塑性变形量,优选形成厚度为约2mm或更大的厚度与BECU合金的部分。通常,如果由Becu合金块形成预定形状的压力表面,则容易满足上述条件。由于BECU合金具有弹性,因此优选的是在上冲头14和/或下冲头16侧和通孔12a的侧表面之间提供约5μm至60μm的间隙。\n\n【0048】\n\n在填充磁性粉末18之后,上冲头14开始落下。上冲头14的压力表面14a按压下粉末18的上表面,如图2所示。1(b)。在磁粉末18完全由上冲头14完全密封之后,将磁场产生线圈(未示出)施加到腔内的粉末18,以及磁场产生线圈(未示出)施加面向导向的磁场。磁通量被引导到上冲头14和下冲头16的内部,并且腔内的对准磁场的取向平行于压力方向(上冲头的操作方向)。该定向磁场导致粉末的颗粒加压以定向磁场取向。面向磁场的强度是\n\n0.5mA / m以上优选为2.0 mA / m以下。取向磁场可以是静态磁场或脉冲磁场。\n\n【0049】\n\n利用施加到粉末的对准磁场,腔中的磁粉被上冲头14和下冲头16压缩,由此形成粉末成型体24。在按压步骤的过程中,压力施加的磁粉末18的颗粒根据其位置接收不同的应力(压力)。在形成成型体24之后,上冲头14上升,并且通过推动模制体24的下冲头16从模具孔12a提取模制体24。\n\n【0050】\n\n图。图3A示意性地示出了通过传统的压制装置在按压过程的初始阶段处的磁性粉末的粒子18a的对准状态。图。图3B示意性地示出了在压力机的后期级级粉末颗粒18a的对准状态。\n\n【0051】\n\n放置在定向磁场中的磁性粉末的各个颗粒18a在取向磁场的取向上取向,并且磁性强烈地连接到另一个粉末颗粒18a。结果,如图2所示。如图3A所示,多个粉末颗粒18a沿着定向磁场的取向成一排。当上冲头14\'和下冲头16\'之间的距离在施加定向磁场时减小,冲头表面14a\'和16a\'具有弯曲表面,因此它们不是均匀的压力(应力)。加压表面14a\'和16a\'是由较多的静重的含可,并且如图3(b)所示,如图3(b)所示,如图3(b)所示,光滑的加压表面14a\'和16a\'粉末颗粒载玻片在横向(包括在压力机方向上右倾斜的部件的方向),结果,取向的取向被移位。\n\n【0052】\n\n另一方面,在本实施例中,如图1和图2所示。如图4(a)和4(b)所示,可以抑制加压表面附近的粉末颗粒的滑动,从而防止对取向的干扰。这塑性通过从粉末颗粒18a接收的力由上冲头14和下冲头14和16的Becu合金形成的加压表面14a和16a变形。结果,如图2所示。如图5所示,在由Becu合金制造的下冲头16的压力表面16a上形成微小的不规则性。当这种不均匀性由表面粗糙度Ra表示时,它的范围为0.05μm至12.5μm。尽管压力表面16a如图2所示。如图5所示,在压力表面14a上形成相同的不均匀性。在加压表面14a和16a上形成的微小不均匀性抑制了粉末颗粒18a的滑动,以防止对取向的干扰。\n\n【0053】\n\n如上所述,由于磁场中的磁性粉末颗粒18a相互磁耦合,所以粉末颗粒内的粉末颗粒在腔内的运动也受到加压表面14a和16a附近的粉末颗粒的运动的强烈影响。因此,可以仅通过根据压力表面14a和16a与压力表面14a接触的形状,仅通过塑性变形来抑制相对于腔体中的所有粉末颗粒18a的对准程度的降低。 16a。\n\n【0054】\n\n另外,尽管在所获得的模制体24的表面上传递压力机14a和16a的不均匀性,但是如果需要,通过抛光磁体的表面来容易地除去转印结构。可以平滑。\n\n【0055】\n\n在上述实施例中,加压表面14a和16a的整个区域由Becu合金形成,但如图1和2所示。如图6(a)至(d)所示,加压表面16a的一部分区域(第一区域)16b由Becu合金形成,其他区域(第二区域)16c是非磁性硬质合金(例如WC-Ni,Vickers硬度:1200,渗透率:1.0003)或高锰钢(Vickers硬度:460,它可以通过渗透率形成:1.004)。当然,也对于压力表面14a,第一区域和第二区域可以设置为压力表面14a。\n\n【0056】\n\n形成第二区域16c的材料的维氏硬度高于形成第一区域的材料,超过450,优选700或更高。当使用具有700或更大的维氏硬度的材料时,由于连续使用而磨损很小,因此可以通过仅加强第一区域来重复使用。如上所述,由于优选的是,压力表面16a由具有1.01或更小的渗透性的材料形成,因此优选使用磁导率为1.01或更小的材料。当然,更优选渗透率为1.001或更低。\n\n【0057】\n\n在加压表面16a中的第一区域16b和第二区域16c的布置可以是各种图案,例如,图1和2中所示的图案。可以举例说明图6(a)至6(d)。如图1所示。如图6A所示,多个小岛状的第一区域16b可以均匀地布置在加压表面16a的前表面上,并且如图6所示,如图6所示,如图6所示,如图6所示,如图6(b)所示,第一区域16b可以在可能发生磁性颗粒的取向扰动的区域中选择性地或强烈地设置。当提供多个第一区域16b时,各个第一区域16b的尺寸和形状没有特别限制,并且可以根据形成加压表面16a的方法适当地设定。\n\n【0058】\n\n易于对准磁性颗粒的对准湍流的区域是加压表面16a(和/或压力表面14a)的形状,取向磁场与搅拌器之间的关系使用阈值方法填充时。它可能是不同的取决于运动方向在第一个平行压机中,在压力表面16a中的倾斜角度大的外围区域中可能发生对准干扰,使得第一图中的第一区域。6(b)至(d),是第一个区域加压表面16a是设置区域16b。这里,加压表面16a的倾斜角度被确定为与压力机方向正交的参考表面(通常是水平面)。\n\n【0059】\n\n在压力表面16a上形成第一区域16b的方法例如,在形成下冲头16的主体部分之后,具有形成第二区域16c的材料(例如,非磁性硬质合金)和第一区域在一部分中形成图16B和孔或凹槽,并且可以使用将BECU合金压配或焊接到孔或凹槽的方法。为了抑制粉末颗粒的取向障碍,形成第一区域16b的BECU合金的厚度约为几μm或更大,并且存在2mm或更大,以获得足够的塑性变形量。优选。可以根据形成第一区域16b的方法来适当地设置。\n\n【0060】\n\n在制造在电动机中使用的C形或弧形成型体的情况下,如上所述,当形成成型体的凸起表面侧的至少一部分由Becu合金形成时,当由Becu合金形成定向受到干扰。可以通过抑制获得齿槽扭矩缩减效果。\n\n【0061】\n\n[制造合金粉末的方法]\n\n本发明适用于稀土烧结磁体的制造,并且在R-T-(M)-B系统的高性能稀土烧结磁体的制造中特别有效。\n\n【0062】\n\n基于R-T-(M)-B的稀土磁铁合金的铸造片是使用已知的带材铸造方法生产的。具体而言,首先,Nd:30wt%,B:1.0wt%,Dy:1.2wt%,Al:0.2wt%,Co:0.9wt%,残留的Fe和不可避免的杂质,通过高频溶解熔化并形成合金熔融金属。在1350℃下握住合金熔融金属后,可以通过单辊方法淬灭合金熔融金属,并且可以获得厚度为0.3mm的片状合金锭。此时的淬火条件例如是约1m / s的辊圆速,冷却速率为500℃/秒,以及180℃的过冷。淬火速度为102°C / s至104它设置为°C。/秒。\n\n【0063】\n\n由此形成的快速冷却合金的厚度在0.03mm或更大和10mm或更小的范围内。该合金是短轴方向尺寸为0.1μm以上且100μm或更小,并且长轴方向尺寸为5μm以上且500μm或更小。2T.14B晶粒和r2T.14B含有分散在晶粒晶粒晶界中的R富型相,R-富相的厚度为10μm或更小。通过条带铸造方法生产原料合金的方法公开了例如美国专利No.5,522,517中。美国专利号5,383,978。由于基于R-T-(M)-B的稀土磁体的合金粉末是细长的(具有大纵横比),因此压缩时的流动性(可成形性)差。\n\n【0064】\n\n接下来,粗糙地挤压的原料合金填充有多个进料包并安装在齿条上。此后,使用上述原料转移装置,安装原料包的齿条被输送到氢炉的前部并插入氢气炉的内部。然后,在氢反应器中开始氢研磨处理。原料合金在氢气炉中加热并进行氢气破碎。研磨后,优选在原料合金的温度降低至常常温后取出原料。然而,即使在高温状态(例如,40至80℃)的同时除去原料,原料不接触大气,发生特别严重的氧化。通过氢研磨,将稀土合金研磨成约0.1至1.0mm的尺寸。合金优选在氢研磨过程之前在1至10mm的平均粒径的薄片中粗粉碎。\n\n【0065】\n\n在磨削之后,优选的是通过诸如旋转冷却器的冷却装置更精细地研磨脆性原料合金。当用相对较高的温度状态取出原料时,通过转子冷却或类似物的冷却处理可能相对长。\n\n【0066】\n\n使用磨削装置诸如喷射磨机的研磨方法,例如通过转子冷却器等冷却到约室温的原料粉末的喷射磨机进行,制造原料的细粉。从磁性等的观点出发,细粉的平均粒径(FSSS粒径)优选为2μm以上且10μm或更小。在本实施例中,使用喷射磨机粉碎氮气气氛,得到平均粒径为约3.5μm的合金粉末。该氮气气氛中的氧气量优选降低至约10000ppm。在日本专利公开No.6-6728中描述了这种喷射厂。在粉碎时,优选控制在大气气体中包含的氧化气体(氧气和水蒸气)的浓度,从而在微量研磨至6000ppm或更小之后调节合金粉末的氧含量(重量)。如果稀土合金粉末中的氧气量超过6000ppm,则磁体中的非磁性氧化物的比例增加,最终烧结磁体的磁特性降低。\n\n【0067】\n\n接下来,对于该合金粉末,加入润滑剂,混合,混合,混合,混合在摇摆混合器中,并且合金粉末颗粒的表面涂有润滑剂。作为润滑剂,可以使用通过用石油溶剂稀释脂肪酸酯而获得的那些。在本实施方案中,甲基丙烯酸甲酯用作脂肪酸酯,并且异戊烷用作石油基溶剂。甲基己酸对异戊烷的重量比例如是1:9。这种液体润滑剂被粉末颗粒的表面覆盖,表现出颗粒的抗氧化效果,并且表现出在压制时改善取向和粉末成形性(易于提取的模塑体的易于提取的功能。。\n\n【0068】\n\n润滑剂的类型不限于上述。作为脂肪酸酯,除甲基己酸之外,例如,可以使用甲基纤维素,月桂酸甲酯,月桂酸甲酯等。作为溶剂,可以使用由异戊烷烃,环烷溶剂等表示的石油溶剂。润滑剂添加的定时是任意的,并且可以在研磨和粉碎过程中碾磨。或者,可以使用固体(干燥)润滑剂,例如锌硬脂酸锌代替液体润滑剂或用液体润滑剂。\n\n【0069】\n\n另外,由于通过该方法制造的粉末是更清晰的,流动性差,并且当它在与对准方向上的相同方向上压缩时,在压制时,取向趋于转动。另外,尽管通过加入诸如脂肪酸酯的润滑剂可以容易地实现每种颗粒的取向,但是粉末流动性劣化,从而用压机发生取向扰动。此外,为了获得高磁性,例如,当施加0.8t至2.0 T的高导向磁场时,对准干扰变得显着。因此,在本实施例的情况下,使用由Becu合金形成的加压表面的压制装置的效果显着。\n\n【0070】\n\n[制造稀土磁铁的方法]\n\n首先,使用图1所示的按压装置。使用图1所示的图1,通过上述方法制备的磁粉在定向磁场中模制。在压制成形完成之后,所形成的粉末成型体被下冲头16推向并且被提取到压制装置的外部。反射压力表面14a的图案和在按压步骤中形成在加压表面16a上形成的微小不规则性在该点上传递到模塑主体的表面。根据本实施例,如图2所示,如图4B所示,获得具有较小扰动的粉末模制体。\n\n【0071】\n\n为了提高模具从模具的剥离性,可以在粉末填充之前施加脱模剂并散射到加压表面。作为脱模剂,适当使用通过用溶剂稀释脂肪酸酯而获得的。脂肪酸酯的具体实例包括甲基己酸,甲基夹甲酸甲酯,月桂酸甲酯,月桂酸甲酯等。作为溶剂,可以使用由异丙烷烃代表的石油溶剂,并使用脂肪酸酯:用重量比为1:20至1:1混合。阿拉基酸可以作为脂肪酸含有1.0wt%或更低的脂肪酸。\n\n【0072】\n\n接下来,将模塑主体放置在烧结底板上(厚度:0.5至3mm)。基板由例如钼材料形成。模制体24与底板一起安装在烧结盒上。安装有模制体24的烧结壳体被转移到烧结炉中并经受炉子中已知的烧结过程。模塑体通过烧结工艺变为烧结体。\n\n【0073】\n\n接下来,根据需要在烧结体的表面上进行抛光。在烧结后立即在烧结体的表面上,对应于加压表面14a和16a的微小不均匀性的表面图案。可以通过抛光过程去除一些或全部表面图案。在抛光或代替抛光过程之后,可以进行树脂膜等覆盖烧结体的表面的步骤。以这种方式,最终产品,即制造稀土磁铁。\n\n【0074】\n\n如上所述,尽管已经相对于具有可以适合用于诸如电动机的旋转机器的形状的稀土磁体描述了本发明的实施例,但是本发明不限于此。\n\n【0075】\n\n图2中所示的磁体。图2所示的磁体与上表面和下表面一起弯曲,但是即使只有一个表面是弯曲的,也是完全获得本发明的效果。在这种情况下,形成形成非弯曲平坦表面的侧面的冲压加压表面可以使用与现有技术中的相同的材料(例如,粘合的硬质合金)构成。\n\n【0076】\n\n此外,如参考图1所述所述。如图1A所示,通过滑动填充方法填充在腔体中的磁粉18的表面在模具12的表面上不平坦,并且在一定方向上偏置。,产生波浪。在这种情况下,即使一对加压表面是彼此平行的平坦表面,压力表面也会与磁粉的表面接触,使得常规硬质合金等。如果镜面朝向镜面的加压表面使用,发生对准干扰问题。然而,使用具有使用BECU形成的加压表面的压制装置,可以通过如上所述的相同机制抑制磁粉颗粒的对准障碍。\n\n【0077】\n\n示例和比较例\n\n如图1所示。如图1所示,使用用于稀土合金粉末的压制成型使用压制装置10,所述压制装置10设置有冲头,所述冲头具有由BECU合金形成的加压表面14a和16a(例如,由Sumitomo特殊金属制成的BC-2制成BC-2)。去了。在该实施例中,沿着图2的箭头B方向测量的长度。如图2所示,沿箭头测量的厚度在4mm处的中心处为7mm,末端为4mm,两者箭头A和B是垂直的模制体,其尺寸为35mm,沿方向测量的尺寸为35mm。成型密度为4.30克/厘米3定向磁场(约1mA / m)平行于压力机(箭头A)。此后,相对于模塑体,烧结处理在1050℃下进行2小时,并产生磁体。在相对于该磁体的磁化处理之后,测量磁体表面附近的磁通密度分布。\n\n【0078】\n\n为了进行比较,通过设置有具有由常规硬质合金形成的压力平面的冲头的压力机进行相同的按压步骤,并制备比较例的磁体。\n\n【0079】\n\n测量为该示例测量的磁通密度分布优于比较例的磁通密度分布,并且没有观察到由于取向的降低而产生的分布。\n\n【0080】\n\n接下来,测量使用该示例的磁体制造的电动机测量齿槽扭矩。测量结果如图7(a)所示。为了比较,还测量由比较例的磁体组成的电动机测量齿槽扭矩。测量结果如图7(b)所示。\n\n【0081】\n\n从图中可以看出。如图7A和7B所示,本实施例的电动机的齿槽扭矩足够小于比较例的电动机的齿槽扭矩。根据本发明减少了电动机的齿槽扭矩的原因,在压制过程中难以在模制体中引起对准干扰。\n\n【0082】\n\n【发明效果】\n\n根据本发明的压制装置,由于加压表面的至少一部分由具有适当的维氏硬度的材料形成,所以当粉末压榨机在定向磁场执行时,粉末颗粒在加压表面上滑动。可以抑制,从而防止粉末取向的干扰。\n\n【0083】\n\n在使用这种压制装置形成的粉末成型体中,实现均匀的取向,并且使用该模制体制造的稀土磁体具有优异的磁性。\n\n【0084】\n\n当使用通过本发明的方法制造的磁体组装电动机时,可以减少齿槽扭矩。\n\n[简要描述;简介]\n\n【图1】(a)和(b)是示出实施例的粉末按压装置10的主要部分的示意图。\n\n【图2】图。图1是在本发明的实施例中制造的弧形形状稀土磁体的透视图。\n\n图3.(a)是通过传统的压制装置示意性地示出粉末在压制过程的早期阶段的状态的横截面图,并且(b)是示意性地示出后续阶段的粉末状态的横截面新闻过程。这是一个数字。\n\n图4.(a)是通过实施方式的按压装置示意性地示出压制过程的早期阶段的粉末状态的截面图,(b)示意性地示出了在压力机过程的后续阶段的粉末状态。它是剖面图。\n\n图5.图3是在实施例的按压装置的按压过程之后示出了较低冲头16的透视图。\n\n6.(a)至(d)示意性地示出了本发明实施例中使用的下冲头16\n\n这是一个透视图。\n\n图7.(a)是表示使用示例性磁体制造的电动机的齿槽扭矩的曲线图,(b)是表示由比较例的磁体组成的电动机的齿槽扭矩的曲线图。\n\n[标志的说明]\n\n10新闻设备\n\n12染料\n\n14拳\n\n14A穿孔\n\n16A较低的冲压压力表面\n\n16个较低的拳头\n\n18腔\n\n20臂磁铁\n\n24个模制的身体');
INSERT INTO `os_patent_instruction_text` VALUES (12939, 22768, '【0001】\n\n【発明の属する技術分野】\n\n本発明は、焼結磁石の製造方法に関する。\n\n【0002】\n\n【従来の技術】\n\n希土類焼結磁石は、希土類磁石用合金(原料合金)を粉砕して形成した合金粉末をプレス成形した後、焼結工程、時効熱処理工程、および加工工程などを経て作製される。現在、希土類焼結磁石としては、希土類·コバルト系磁石と希土類·鉄·ホウ素系磁石の二種類が各分野で広く用いられている。なかでも希土類·鉄·ホウ素系磁石(以下、「R-Fe-B系磁石」と称する。Rは希土類元素およびイットリウムからなる群から選択された少なくとも1種の元素、Feは鉄、Bはホウ素である)は、種々の磁石の中で最も高い磁気エネルギー積を示し、価格も比較的安いため、各種電子機器へ積極的に採用されている。なお、Feの一部は、Coなどの遷移金属元素と置換されていても良い。また、ホウ素の半分までは炭素で置換されていても良い。\n\n【0003】\n\n所望の形状を有する焼結磁石を作製するには、まず、R-Fe-B系希土類磁石粉末をプレス装置で圧縮成形することにより、最終的な磁石製品よりも大きいサイズの成形体を作製する。そして、成形体を焼結工程によって焼結体にした後、超硬合金製ブレードソーまたは回転砥石などによって焼結体を研削加工し、所望の形状を付与することが行われている。例えば、まずブロック形状を有する焼結体を作製した後、その焼結体をブレードソーなどでスライスすることによって複数のプレート状焼結体部分を切り出すことが行われている。\n\n【0004】\n\n【発明が解決しようとする課題】\n\nしかしながら、R-Fe-B系磁石などの希土類合金磁石の焼結体は極めて硬くて脆い上に、加工負荷が大きいため、高精度の研削加工は困難な作業であり、加工時間が長くかかる。このため、加工工程が製造コスト増加の重要な原因となっている。\n\n【0005】\n\nこのような問題を解決するため、焼結前の成形体(グリーン)を研削加工することが提案されている(特開平8-64451号公報および特開平8-181028号公報)。\n\n【0006】\n\n上記特開平8-64451号公報は、弓形フェライト磁石用成形体を回転砥石や回転ブラシで面取りする技術を開示している。この技術を酸化反応性の高いR-Fe-B系磁石用の粉末成形体に適用すると、回転砥石や回転ブラシと成形体との間で摩擦熱が発生するため、成形体中の希土類元素や鉄が大気雰囲気中の酸素や水分と急激に反応し、最悪の場合、成形体の発火が生じるおそれがあり、そのような事態に陥らない場合でも磁石の磁気特性が劣化してしまうことになる。\n\n【0007】\n\n特開平8-181028号公報は、グリーン加工時における成形体の酸化を防止するため、鉱物油、合成油、または植物油中に成形体を浸漬し、その状態の成形体を回転する加工刃で切断加工する技術を開示している。\n\n【0008】\n\nしかし、この特開平8-181028号公報に記載されている技術によれば、切断後、焼結前に成形体から鉱物油などを除去する脱脂工程が不可欠であり、脱脂が不十分な場合、油に含まれる炭素が焼結過程で不純物として機能し、磁石特性を劣化させてしまう。\n\n【0009】\n\nまた、上記のブレードソーなどを用いた加工方法による場合、成形体の切断代が大きく、材料の歩留まりが悪いという問題もある。\n\n【0010】\n\n本発明はかかる諸点に鑑みてなされたものであり、その主な目的は、加工負荷を低減し、しかも、成形体の発熱を抑えることができるような加工工程を行う焼結磁石の製造方法を提供することにある。\n\n【0011】\n\n【課題を解決するための手段】\n\n本発明による焼結磁石の製造方法は、焼結磁石の製造方法であって、磁石粉末の成形体を作製する工程と、ワイヤソーを用いて前記成形体を加工する工程と、前記成形体を焼結する工程とを包含する。\n\n【0012】\n\n好ましい実施形態において、前記ワイヤソーは、0.05mm以上3.0mm以下の外径を有するワイヤと、前記ワイヤに固定された砥粒とを有している。\n\n【0013】\n\n好ましい実施形態において、前記成形体を加工する工程は、前記成形体を複数の部分にスライスする工程を含む。\n\n【0014】\n\n好ましい実施形態において、前記成形体を加工する工程は、前記成形体を前記ワイヤソーに対して相対的に移動することによって切断面を形成しながら前記成形体をスライスする工程と、前記切断面に沿って再度ワイヤソーを相対移動させる工程とを包含する。\n\n【0015】\n\n好ましい実施形態においては、前記成形体を加工する工程における前記相対移動は水平面内で行なわれ、前記スライス工程によって得られた前記複数の部分を鉛直方向に引き離す工程をさらに包含する。\n\n【0016】\n\n好ましい実施形態においては、前記成形体を加工する工程の後、前記複数の部分の間隙に溶着防止粉を置く工程を更に包含する。\n\n【0017】\n\n好ましい実施形態においては、酸素濃度がモル比で全体の5%以上18%以下に調節された不活性ガス雰囲気中で前記成形体を加工する工程を行うことを特徴とする。\n\n【0018】\n\n好ましい実施形態においては、少なくとも前記ワイヤソーの前記成形体と接触する部分に切削液(「潤滑液」ともいう。)が付与された状態で、前記成形体を加工する工程を行うことを特徴とする。\n\n【0019】\n\n前記切削液は、炭化水素系有機溶媒を含むことが好ましく、前記炭化水素系溶剤はイソパラフィンを含むことが好ましい。\n\n【0020】\n\n前記切削液は、溶着防止粉を含む分散液であることがさらに好ましい。\n\n【0021】\n\n好ましい実施形態において、前記切削液は、浸漬法、滴下法または噴霧法を用いて、前記ワイヤソーに付与される。\n\n【0022】\n\n好ましい実施形態においては、切削液中において前記成形体を加工する工程を行う。\n\n【0023】\n\n好ましい実施形態において、前記成形体を作製する工程は、前記磁石粉末に潤滑剤を添加する工程を含んでいる。\n\n【0024】\n\n好ましい実施形態において、前記磁石粉末は、0.001Tから0.1Tの残留磁化を有する。\n\n【0025】\n\n好ましい実施形態において、前記磁石粉末は、R-T-B系希土類合金(Rは希土類元素およびイットリウムからなる群から選択された少なくとも1種の元素、Tは鉄を必ず含む遷移金属元素、Bはホウ素である)の粉末である。また、磁石粉末の平均粒径(FSSS粒径)は2.0μm〜8.0μmの範囲にあることが好ましい。\n\n【0026】\n\n【発明の実施の形態】\n\n本発明では、磁石粉末の成形体を焼結前にワイヤソーを用いて加工する。ワイヤソーとは、一方向または双方向に走行するワイヤを、加工すべき成形体に押し付け、ワイヤと成形体との間にある砥粒によって成形体を加工する技術である。\n\n【0027】\n\n本発明者は、酸化しやすい希土類合金磁石粉末の成形体を焼結前において加工する場合において、上記のワイヤを用いることにより、通常の回転刃などによって発生する発熱·発火の問題を回避できることを見出し、本発明を想到するに到った。\n\n【0028】\n\n本発明の好ましい実施形態では、表面に砥粒が固着されたワイヤを用いる。ワイヤ芯線は、引っ張り強度の高い材料から形成されることが好ましく、例えば、硬鋼線(ピアノ線)、Ni-CrやFe-Niなどの合金、WやMoなどの高融点金属、またはナイロン繊維を束ねたものから形成される。また、ワイヤが太すぎると、切断代が大きくなるため、材料の歩留まりが低下してしまう。逆にワイヤが細すぎると、加工負荷によってワイヤが切断してしまうおそれがある。さらに、切断抵抗を増加させるため、発熱·発火の原因となる。このため、本発明で用いるワイヤの外径は、0.05mm以上3.0mm以下に設定されることが好ましい。より好ましいワイヤの外径は、0.1mm以上1.0mm以下である。なお、ここでいうワイヤソーとは、切込方向における幅が3.0mm以下の切断手段を広く意味し、例えば、この幅が3.0mm以下のバンドソー等を含むものとする。\n\n【0029】\n\n一方、砥粒はダイヤモンド、SiC、またはアルミナなどの高硬度材料から形成されてい\n\nることが好ましく、その粒径は、典型的には10μm以上1000μm以下である。砥粒は、樹脂膜などの結合層によってワイヤ芯線の表面に固着されていることが好ましい。樹脂膜としては、フェノール樹脂、エポキシ樹脂やポリイミド樹脂を用いることができる。樹脂膜の厚さは、0.02mm〜1.0mm程度である。\n\n【0030】\n\nなお、結合層として樹脂膜の代わりに金属膜などを用いて砥粒を固着してもよい。例えば、電着法(電気めっき法)によって砥粒を固着したワイヤ(「電着砥粒ワイヤ」と呼ばれることがある。)は、樹脂層で砥粒を固着したワイヤよりも砥粒の突き出し量(砥粒が結合層の表面から突出している部分の高さ)を大きく出来るので、切削屑(切り粉またはスラッジ)の排出性に優れるので好ましい。また、十分な強度が得られるのであれば、拠り線を用いてもよい。拠り線を用いると切削屑の排出性をさらに向上することが出来る。なお、後述するように、切削屑の排出性を高めるために切削液を用いる場合には、切削液に対する耐性の観点からも、電着砥粒ワイヤを用いることが好ましい。\n\n【0031】\n\n砥粒の平均粒径Dは、切削効率の観点から、30μm≦D≦1000μmの関係を満足することが好ましく、特に、40μm≦D≦200μmの関係を満足することが好ましい。また、切削効率と切削屑の排出効率の観点からは、ワイヤソーの走行方向における、互いに隣接する砥粒間の平均距離は砥粒の平均粒径Dの200〜600%の範囲内にあることが好ましく、且つ、突き出し量は、15μm〜500μmの範囲内にあることが好ましい。\n\n【0032】\n\nなお、プレス時に印加する配向磁界によって成形体は磁化される。この磁化を取り除くことを目的として成形体に脱磁処理を施しても、0.001T〜0.1T程度の残磁が存在することになる。残磁をこれよりも小さくすることはできるが、そのためには工程数が増加するので、量産上好ましくない。成形体が残磁を有する結果、成形体をワイヤソーで切断するとき、切断代を小さくすると、切削屑が残磁によって切断面に付着してしまうため、成形体どうしを分離することが困難になる。このような問題を避けるには、0.1mm以上の切断代を設けることが好ましい。\n\n【0033】\n\nまた、砥粒が表面に固着されていないワイヤ(遊離砥粒型ワイヤ)を用いてもよいが、その場合は、砥粒が表面に固着されているワイヤ(固定砥粒型ワイヤ)を用いるよりも切削屑が排出され難く、切断溝(切削溝)内に相対的にたまりやすく、上記の残磁によって切断面に付着する切削屑が増える可能性がある。このため、固定砥粒型ワイヤを用いる方が、成形体どうしを分離しやすく、好ましい。\n\n【0034】\n\n成形体を複数の部分にスライスする場合に成形体どうしを分離しやすくするために、一旦形成された切断面に沿って再度ワイヤソーを相対移動させてもよい。このよう切断面に沿って再度ワイヤソーを通過させることによって、成形体どうしの間隙に残存した切削屑が排出され、欠けを発生させることなく、成形体を分離することが可能になる。ワイヤソー切断面に沿って再び通過させるために、1回目の切断によって形成された溝(複数の成形体の間隙)を保持することが好ましい。\n\n【0035】\n\nまた、切断加工工程における切削屑の排出性を向上するために、少なくともワイヤソーの成形体と接触する部分に切削液が付与された状態で成形体を切削加工してもよい。ワイヤソーに切削液を付与することによって、切削屑がワイヤソーに付着しやすくなり、且つ、切削屑(粉)どうしが凝集しやすくなるため、より多くの切削屑がワイヤソーに付着し、切削部から排出される。\n\n【0036】\n\nなお、未焼結の成形体は、機械的な強度が低いので、切削液を用いると壊れやすくなることが懸念されたが、本発明者の実験によると、切削液を用いることによる強度低下に起因\n\nする歩留まりの低下は認められなかった。むしろ、切削液を用いることによって切削屑の排出性が向上し、成形体どうしをより高い確率で分離することが可能となった結果、製造工程を簡略すること、および/または製造歩留まりを向上することが出来る。\n\n【0037】\n\n例えば、上面と下面とが互いに曲率の異なるアーチ状の成形体を切断加工する場合、成形体を支持台に載置した状態で鉛直方向を含む面内に切断面を形成するように切断(縦切り)した後、切断された成形体どうしを分離する工程を特に行うことなく、そのままの状態で焼結しても、成形体どうしの溶着の発生率は低く、十分な製造歩留まりを得ることができる。\n\n【0038】\n\n切削液としては、成形体の酸化を避けるために、非水系の切削液(有機溶剤または油系切削液)を用いることが好ましく、焼結磁石中に炭素として残留し難い、炭化水素系有機溶媒を用いることが好ましい。特に、飽和炭化水素系溶媒(例えば、イソパラフィンやノルマルパラフィン)は、容易に除去されるので、好ましい。さらに、切断後の成形体どうしの溶着をより効率的に防止するために、切削液に溶着防止粉を分散した分散液を用いても良い。\n\n【0039】\n\n切削液は、浸漬法、滴下法または噴霧法を用いてワイヤソーに付与してもよいし、成形体の加工を切削液中で行ってもよい。\n\n【0040】\n\n以下、図面を参照しながら、本発明の実施形態を説明する。\n\n【0041】\n\n(実施形態1)\n\n図1は、本発明に好適に用いられる実施形態1のワイヤソー装置の一構成例を示している。図示されている装置は、加工対象の成形体(グリーン)1を支持し、上下(z軸方向)に駆動する駆動装置2と、複数のロール3a、3b、3c、および3dとを備えている。\n\n【0042】\n\nワイヤソー4は、上述の砥粒がワイヤに固着されたものであり、ロール3a〜3dに巻かれ、y軸に平行な方向に走行する。ワイヤソー4は、x軸方向に等間隔で配列され、その配列間隔(ワイヤピッチ)は、ブロック状の成形体1から切り出す各プレート状部分のサイズ(厚さ)によって任意に設定される。本発明が好適に適用される用途において、ワイヤピッチは、例えば約1mm以上約30mm以下の範囲内に設定される。\n\n【0043】\n\nワイヤソー4に用いるワイヤの外径は、ワイヤ強度および切断代を考慮すると、0.05mm以上3.0mm以下の範囲内に設定することが好ましい。なお、焼結後の硬い焼結体をワイヤソー4で切断しようとすると、ワイヤには20〜40N程度の張力が印加されることになる。これに対して、本発明では、焼結前の柔らかい成形体1を加工するため、ワイヤに印加すべき張力も0.1〜10N程度と比較的低くてすむため、切断抵抗が小さく、比較的酸素濃度の高い雰囲気でも発火や酸化の問題なく成形体の切断·加工が可能となる。\n\n【0044】\n\nワイヤソー4には、加工時、イソパラフィンやエチルアルコールなどの有機溶剤を切削液として供給してもよい。ただし、切削液の供給は必須ではないが、後述するように、切削屑の排出性を向上することができる。\n\n【0045】\n\nワイヤソー4のy軸方向速度(vy)を、本明細書では「ワイヤ送り速度」と称することとする。所定のワイヤ送り速度で走行するワイヤソー4に対して成形体1を押し付けることにより、成形体1を切削し、複数の部分に切断·分割(スライス)することができる。成形体1をワイヤ4に押し付けてゆく速度(vz)は、図示されている例では、駆動装置のz軸方向の駆動速度に対応し、これを本明細書では「切込速度」と称することにする。\n\nこの切込速度が速いほど、加工に要する時間が短縮される。\n\n【0046】\n\nワイヤ送り速度および切込速度は、後述する実施例の説明から明らかなように、加工負荷の値に大きく影響する。加工負荷を実用上適切な範囲に収めるには、切込速度を例えば30mm/min以上1200mm/min以下に設定することが好ましく、30mm/min以上800mm/min以下に設定することが更に好ましい。\n\n【0047】\n\nなお、ワイヤソー4は一定の方向に走行させるだけではなく、y軸方向に沿って往復動作(レシプロカル動作)を行うようにしてもよい。この場合は、例えば複数のワイヤを張った矩形の枠体をエアシリンダなどによってy軸方向に直線的に往復動作させれば良い。また、エアシリンダの代わりに、モータとクランクを組み合わせた装置を採用しても良い。\n\n【0048】\n\n図2は、従来の焼結体を切断する場合と、本発明による焼結前の成形体を切断する場合について、製造工程の違いを説明するフローチャートである。図2に示されるように、従来例では、まず、原料粉末を用意する工程、粉末をプレスする工程、成形体を焼結する工程、焼結体を切断する工程、切断された各焼結体部品に対して表面処理を施す工程などの各工程を行う必要があった。これに対して本発明では、プレス工程の後、焼結工程前に、成形体(グリーン)を切断し、最終磁石製品に近い形状とサイズを持つ成形体部分を作製する。このように本発明では、焼結体よりも著しく柔らかくて加工しやすい状態にある成形体(グリーン)を切断するため、切断加工に要する時間が大幅に短縮される。\n\n【0049】\n\nなお、本発明によれば、ワイヤソーと成形体との接触面積が従来の回転刃などを用いた場合の接触面積に比べて小さく、摩擦による発熱量が極めて少ない。例えば、従来の回転刃の場合、接触面積が1000〜10000mm2程度となるような場合でも、本発明によれば、接触面積を5〜50mm2程度に抑えることができる。このため、大気雰囲気中においてワイヤソー加工を行っても、希土類合金粉末の酸化や発火の問題を充分に回避できる。\n\n【0050】\n\nただし、本発明による場合でも、よりいっそう磁石粉末の酸化を抑制し、高性能の磁石特性を実現するためには、磁石粉末の酸素濃度が重量比率で3000ppmを超える場合には、酸素濃度がモル比で全体の10%以上15%以下に調節された不活性ガス雰囲気中でワイヤソー加工を行うことが好ましい。特に、酸素濃度が重量比率で全体の3000ppm以下となるような低酸素の磁石粉末を用いて成形体を作製する場合は、磁石粉末の酸化反応性が著しく強いため、上記よりも厳しく酸素濃度が制限された環境(例えば酸素濃度がモル比率で2%以下の不活性ガス雰囲気中)でワイヤソー加工を行うことが望ましい。酸素濃度を上記の範囲内に制御することは、切断加工を行う装置のまわりを部分的に囲えば可能であり、ワイヤソー装置のまわりを大気雰囲気から完全に分離することなく実現できる。このように気体中で成形体を切断する場合には、雰囲気をコントロールすることが好ましい。\n\n【0051】\n\nまた上述のように気体中で乾式成形体を加工する場合には、磁石粉末に対して成形前に固体または液体の潤滑剤(例えば脂肪酸エステル)を添加しておくことが好ましい。粉末表面に形成される潤滑剤の膜によって酸化が防止されるからである。また、成形体を作製した後で、加工前に成形体に潤滑剤を十分にしみこませてもよい。このような潤滑剤は、後の焼結工程において容易に成形体から除去できるものが好ましい。\n\n【0052】\n\nなお、従来の回転刃を用いる場合は、切断代が大きく(例えば幅0.5mm以上)、切削加工部分から切削屑が粉塵化して周囲に飛散することがあった。飛散した切削屑が発火すると、極めて危険である。しかし、本発明によるワイヤソーを用いる場合は、切削屑の飛散を大きく抑制することができるので、安全に作業を行うことができる。\n\n【0053】\n\nまた、本発明によるワイヤソー加工は、イソパラフィンに代表される飽和炭化水素系溶剤などの有機溶媒中において実行しても良い。このような有機溶媒中であれば、脱脂が容易であるため、特別の脱脂工程を導入することなく、標準的な焼結プロセスにおいて、成形体中から除去される。このため、有機溶媒中の炭素が焼結磁石の磁気特性を劣化させるという問題も生じない。\n\n【0054】\n\n次に、本発明による実施形態1の実施例を説明する。\n\n【0055】\n\n本実施例では、図3に示すように、3列に配置したワイヤソーにより、下方から上昇する成形体(グリーン)を大気雰囲気中で切断した。ワイヤソーのワイヤ外径(線径)は0.24mmとし、ワイヤピッチは5mmとした。加工対象の成形体(グリーン)は、26質量%(Nd+Pr)、5質量%Dy、1質量%B、1質量%Co、0.2質量%Al、0.1質量%Cu、残部Feの合金組成を有する磁石粉末(FSSS粒径:3.0〜3.2μm)を公知のプレス装置を用いて成形したものである。磁界配向させるための印加磁界は1.2T程度とした。成形体は略直方体の形状を有し、そのサイズは高さ15mm×幅41.7mm×奥行き66.2mmであった。\n\n【0056】\n\nワイヤソーに対する成形体の配置関係は、各ワイヤと成形体との接触部長さが41.7mmとなるように設定した。また、不図示のロードセルにより、成形体上昇時に成形体がワイヤソーから受ける加工負荷(下方向に向かう負荷)を測定した。また、この実験では、ワイヤ送り速度および切込速度を100〜150m/minの範囲で変化させ、また、切込速度を150〜420mm/minの範囲で変化させた。\n\n【0057】\n\n図4は、加工負荷の成形密度依存性を示すグラフである。なお、図4に示す例では、ワイヤ送り速度を150m/minとし、切込速度を150mm/minとした。\n\n【0058】\n\n図4から、成形密度の増加に伴って加工負荷が増大していることがわかる。ただし、成形密度が小さくなりすぎると、成形体の強度が低下し、成形体の割れや欠けが生じやすくなるという問題が生じるため、成形密度は最低でも3.6g/cm3以上は必要である。種々の観点から、好ましい成形密度の範囲は3.8g/cm3以上5.0g/cm3以下である。焼結後の磁気特性と成形体の割れや欠けの発生による歩留まりを考慮すると、成形体の密度は4.0g/cm3以上4.7g/cm3以下であることがさらに好ましい。なお、磁石粉末(合金材料)の真密度は、7.5g/cm3である。\n\n【0059】\n\n図5は、加工負荷のワイヤ送り速度依存性を示すグラフである。ここでは、切込速度を150mm/minとした。また、図6は、上記潤滑剤を添加した場合における加工負荷の切込速度依存性を示すグラフである。ここでは、ワイヤ送り速度を150m/minとした。\n\n【0060】\n\n図5からは、ワイヤ送り速度を速くするほど、加工負荷が低減されることがわかり、図6からは、切込速度を遅くするほど、加工負荷が低減されることがわかる。ワイヤ送り速度や切込速度を不適切なレベルに設定してしまうと、加工負荷が大きくなりすぎる結果、成形体の切断面が荒れてしまう。具体的には、加工負荷が大きくなると、切断面にソーマークが形成され、表面に無視できない凹凸が発生する。従って、焼結後の加工に掛かる工数が増加する。また、切断後の成形体のエッジ部に欠けが発生する割合が増加する。\n\n【0061】\n\n図7(a)は、切断面の焼結後における面精度(「うねり」または「表面粗度」)と成形密度との関係を示すグラフである。ここでは、ワイヤ送り速度を150m/minとし、切込速度を150mm/minとした。図7(b)は、切断面のうねり測定範囲(約32\n\nmm)を示す斜視図であり、図7(c)は、うねりの測定データ(段差データ)を示すグラフである。図7(a)のグラフは、図7(c)のデータに基づいて作成されたものである。\n\n【0062】\n\n図7(a)からわかるように、成形密度が高い(例えば4.3g/cm3以上)ほど、焼結体の面精度は良くなることがわかる。\n\n【0063】\n\n次に、本発明の方法によって焼結前の成形体に対する切断加工を行った実施例と、焼結後に切断加工を行った比較例について、最も適切な面精度を得ることができた切込速度とワイヤ送り速度を記載する。\n\n【0064】\n\n【表1】\n\n\n\n【0065】\n\n表1から明らかなように、本発明のように柔らかい成形体に対するワイヤソー切断を行う場合は、比較的遅いワイヤ送り速度でも、比較例に対する200倍以上の切込速度を達成することができた。切込速度の向上は、加工負荷の低下によって得られたものであり、工程時間の短縮に直結する。\n\n【0066】\n\n次に、本発明の実施例について、焼結や研磨による寸法の変化を以下の表2に記載する。\n\n【0067】\n\n【表2】\n\n\n\n【0068】\n\nワイヤソーによる切断加工直後における成形体の厚さ(図1のx方向サイズ)を4.76mmとした。このサイズは、ワイヤピッチ(5mm)からワイヤ外径(0.24mm)を引くことにより求めた計算値である。\n\n【0069】\n\n焼結によって成形体の厚さは30%近く収縮し、研磨によって焼結体の厚さは更に0.1mm程度小さくなった。焼結による収縮はプレス中に印加した配向磁界の向きに最も顕著に生じる。なお、本実施例では、成形体の厚さ方向に磁界を印加し、粉末の配向を行っていた。\n\n【0070】\n\n従来、焼結による収縮が起きた後の焼結体を切断加工していたため、その切断代が焼結体の厚さに占める比率が大きかった。これに対し、本発明では収縮する前の成形体を切断するため、用いるワイヤの外径が等しい場合でも、成形体の厚さに占める切断代の比率は相対的に小さくなる。このことは、切断加工によって失われる材料をできるたけ少なくし、材料の歩留まり(利用効率)の向上に大きく寄与する結果となる。\n\n【0071】\n\n次に、図8を参照しながら、ワイヤソーで成形体をスライスした場合の好ましい焼結方法(焼結時における成形体の配置方法)を説明する。\n\n【0072】\n\n図8に示すように、ワイヤソーで切断分離された成形体の各切断面を近接させた状態で焼結工程を行うと、切断面が相互に溶着するという問題が生じやすい。切断代が小さいと、このような溶着は特に生じやすくなる。焼結による溶着を避けるため、切断面の間隙に例えばY2O3粉末などの溶着防止粉を置くことが好ましい。溶着防止粉は、磁石の希土類元素と反応しにくい材料から形成されたものであれば良く、Y2O3粉末に限定されない。例えば、Al2O3やCなどの粉末やフレークを用いても良い。\n\n【0073】\n\nまた、ワイヤソーによる切断の後、図8の下方に示すように、各切断面の間隙を広げるよう配置したり、別々に焼結工程を行ったりしてもよい。この場合、焼結台上に配置する成形体どうしの間隔は0.1mm以上に広げることが望ましい。\n\n【0074】\n\n(実施形態2)\n\n図9は、本発明に好適に用いられる実施形態2のワイヤソー装置20を備える磁石用粉末成形体作製装置100の構成例を示している。\n\n【0075】\n\n磁石用粉末成形体作製装置100は、プレス成形装置10とワイヤソー装置20とを備えている。磁石用粉末成形体作製装置100は、さらに、プレス装置10からワイヤソー装置20へ成形体1を搬送するためのベルト16と、ワイヤソー装置20でスライスされた成形体1aを焼結ケース50に搬送するための搬送用ベルト42と、搬送用ベルト16からワイヤソー装置20へ成形体1を搬送し、ワイヤソー装置20から搬送用ベルト42にスライスされた成形体1aを搬送するための搬送装置30とを備えている。\n\n【0076】\n\n磁石用粉末成形体作製装置100は、少なくともワイヤソー装置20の周囲の雰囲気中の酸素濃度を低下させるために、例えば、窒素ガスで空気を置換できるように、保護壁70で囲まれている。ここでは、搬送ベルト16の途中から焼結ケース50までを保護壁70で囲い、窒素ガスを保護壁70内に供給することによって、酸素濃度を上述した範囲内に制御している。\n\n【0077】\n\n次に、磁石用粉末成形体作製装置100の動作を説明する。\n\n【0078】\n\nプレス成形装置10は、上パンチ14aと、下パンチ14bと、ダイ14cと、これらを動作させる機構および制御機構(いずれも不図示)を有している。ダイ14cの貫通孔と下パンチ14bの上面で形成されるキャビティ内に、フィーダボックス12を用いて磁粉を落下充填し、上パンチ14aと下パンチ14bとによって一軸プレスすることによって成形体1を作製する。なお、プレス成形装置10は、磁気回路(不図示)を有し、プレス成形中に配向磁界を磁粉に印加することができる構成を有してもよい。配向磁界の方向は、プレス方向と平行であってもよいし、プレス方向に直交する方向であってもよい。また、プレス成形装置10に、脱磁磁界を発生させる磁気回路(不図示)を設けてもよい。\n\n【0079】\n\nプレス成形装置10によって作製された成形体1は、搬送ベルト16によって、ワイヤソー装置20が配置されている保護壁70内に移送される。この搬送ベルト16に脱磁磁界発生用の磁気回路(不図示)を配置したり、成形体1に窒素ガスなど不活性ガスを吹き付ける機構を設けることによって、成形体1に付着した磁粉を除去するようにしてもよい。\n\n【0080】\n\n搬送ベルト16で保護壁70内に運ばれた成形体1は、搬送装置30のアーム34によって、載置台28上に設けられたワイヤソー装置20にセットされる。搬送装置30は、レ\n\nール32に2つのアーム34および36を有し、アーム34および36はそれぞれ、例えばマグネットチャック(磁気吸着保持機構)によって、成形体1またはスライスされた成形体1aを着脱(保持/開放)する。アーム34および36は、それぞれ互いに独立に上下方向に移動することができとともに、レール32に沿って移動する。アーム34および36の動作は例えばシーケンサによって制御され、互いに独立に制御されてもよいし、連動して制御されてもよい。アーム34および36は、例えば、エアーシリンダを用いて成形体1を挟持するようにしてもよい。\n\n【0081】\n\n後に詳述するように、成形体1は、ワイヤソー装置20によって、水平方向にスライスされ、複数の成形体1aに加工される。モータ26でボールねじ27を駆動することによって成形体保持装置22をワイヤソーユニット24に対して相対移動させ、成形体1をワイヤソーユニット24のワイヤソー24bで切断する。モータ26の回転速度を変えることによって、成形体1のワイヤソー24bに対する相対速度(切込速度)を調節することができる。得られた複数の成形体1aは、アーム34によって吸着保持され、ワイヤソー装置20から載置台28上の退避位置へ移送される。\n\n【0082】\n\n載置台28上の退避位置に置かれた成形体1aは、アーム36によって、上面を吸着保持され、一枚ずつ分離されながら、搬送用ベルト42上に配置されたトレイ44上に移送される。本実施形態では、水平方向に切断面が形成されるように成形体1をスライス(切断)しているので、アーム36によって成形体1aの上面(あるいは切断面)を吸着し、アーム36を鉛直方向に移動させると、切断面に垂直な力だけが作用し、切断面に対してせん断力が実質的に発生しないので、成形体1aに欠けが発生することを抑制することができる。\n\n【0083】\n\n次に、所定の枚数の成形体1aがトレイ44に収容された後、トレイ44は、搬送ベルト42によって、焼結ケース50内に搬送される。焼結ケース50は、複数の支持棒52によって形成された複数段の収納棚を有しており、リフト60の上下運動によって、搬送ベルト42からトレイ44を受容するように、収容棚の高さが調節される。\n\n【0084】\n\n焼結ケース50内に所定数のトレイ44を収容した後、焼結ケース50は、焼結炉へ搬送される。以下、実施形態1と同様の工程を経て、焼結磁石が作製される。\n\n【0085】\n\n次に、図10および図11を参照しながら、実施形態2のワイヤソー装置20の構造と動作を詳細に説明する。\n\n【0086】\n\nワイソー装置20は、成形体保持装置22とワイヤソーユニット24とを有している。\n\n【0087】\n\n成形体保持装置22は、図11に示すように、底板22aと、背面板22bと、2枚に側面板22cとを有している。背面板22bは、成形体1を切断し終わったワイヤソーを収容するための溝26を有している。溝26はワイヤソーを完全に収容できるだけの大きさ(幅および深さ)を有している。溝26を形成しておかないと、背面板22bに達したワイヤソーが上下方向にずれたり、背面板22bと成形体1aとの間に間隙が形成されたりすることによって、成形体1の切断終端部に欠けが発生することがある。2枚の側面板22cのそれぞれには、ワイヤソー通過用のスリット23が設けられており、切断工程に亘って成形体1およびスライスされた成形体1aを一対の側面板22cの間に挟持している。\n\n【0088】\n\n成形体1は、成形体保持装置22の底板22a上に置かれ、一対の側面板22cに挟持され、且つ、背面板22bで支持されながら、ワイヤソーユニット24に対して相対移動させられる。背面板22bと側面板22cは、例えば、図示していないエアシリンダ等によ\n\nって成形体1を挟持し、切断後に解放する。\n\n【0089】\n\nワイヤソーユニット24は、図10に示したように、3本の固定砥粒ワイヤソー24bが張設されたフレーム24aを有し、フレーム24aは、載置台28に設けられたレール25によって摺動可能に保持されている。フレーム24aは、モータ24cに連結されたクランク24dに接続されており、モータ24cの回転に従ってレール25に沿って図中に矢印Aで示したように往復運動する。\n\n【0090】\n\n成形体1を成形体保持装置22で保持しながら、往復運動しているワイヤソー24bに対して図中の矢印Bの方向に相対的に移動させる。すなわち、ワイヤソー24bは、成形体保持装置22の側面板22cのスリット23を通過しながら、背面板22bの溝26にまで到達し、成形体1は切断され、複数の成形体1aとなる。この後、さらに、切断された成形体1aを成形体保持装置22によって保持した状態で、ワイヤソー24bを往復運動させながら成形体保持装置22を逆方向に移動(退避)させる(図中の矢印B参照)。このように、ワイヤソー24bを切断面(複数の成形体1aの間隙)に沿って再び通過させることによって、切断面に残存している切削屑を除去する。\n\n【0091】\n\nワイヤソー24bの直径は比較的小さく、切削屑の排出性が低いので、成形体1aの間に多くの切削屑が残存し、成形体1a同志が密着し、容易に分離できないことがある。特に、配向磁界を印加して成形された成形体の磁粉は残留磁化を有しているので、切削屑の排出性が低い。このような状態で、成形体1aを分離すると、成形体1aに欠けが発生することがあるが、上述のように、切断面に沿ってワイヤソー24bを再度通過させることによって、成形体1a同志の間隙に残存した切削屑が除去され、欠けを発生させることなく、成形体1aを分離することが可能になる。すなわち、上述したように、マグネットチャックを用いて成形体1aの上面を吸着保持し、上方に引き上げるだけで、成形体1aを一枚ずつ分離することが可能になる。\n\n【0092】\n\nなお、2回目のワイヤソー24bの通過は、切削屑の除去が目的であるので、切断時のワイヤソー24bの通過速度(切込速度)よりも速くしてもよい。2回目のワイヤソー24bの通過速度が遅すぎると切削屑の排出効果が十分に得られないことがあるので、切断時の通過速度と同等もしくはそれ以上の速度で通過させることが好ましい。なお、2回目のワイヤソー24bの通過方向は、切断時と逆にする必要は必ずしもないが、成形体保持装置22を次の成形体1を受容するための位置に戻す工程を兼ねることができるので、切断時と逆にすることが好ましい。\n\n【0093】\n\nここでは、成形体1とワイヤソー24bとを水平面内で相対移動させることによって切断する構成を例示したが、これに限られず、例えば、実施形態1のように、成形体1とワイヤソー24bとを鉛直面内で相対移動する構成においても、ワイヤソー24bを切断面に対して再度通過させることによる効果を得ることができる。\n\n【0094】\n\nフレーム24aに張設されるワイヤソー24bの本数に制限は無く、また、ワイヤソー24bの張力(例えば、0.05N〜10N)は、成形体1の硬さ(加工しやすさ)や切込速度等に応じて適宜設定できる。成形体保持装置22の移動速度(切込速度)は、ワイヤソー24bの太さ、送り速度(走行速度)、張力および成形体1の硬さ等に応じて適宜設定される。適切に調節すると、切断面を平滑にすることができ、研磨工程等の工数を削減することができる。\n\n【0095】\n\nここでは、モータ24cとクランク24dとを用いてワイヤソー24bを往復運動させたが、ワイヤソー24bを走行させる方法はこれに限らず公知の種々の方法を用いることができる。例えば、大型のワイヤソー装置のように長いワイヤを往復走行させても良いし、\n\n一方向に走行させてもよい。また、エンドレスワイヤソーを用いることもできる。成形体1は切断されやすく、ワイヤソーの磨耗は少ないので、新線の供給も不可欠ではなく、種々の駆動方法を用いることができる。\n\n【0096】\n\nただし、例示したように、成形体1aとワイヤソー24bとを水平面内で相対的に移動し、ワイヤソー24bを水平面内で往復運動させると、切断によって生じる切削屑が機構部分(すなわち、モータ24c、クランク24d、モータ26およびボールねじ27)に飛散することが無いので、装置のメインテナンスが容易になるという利点がある。残留磁化を有する磁粉が機構部分に飛散すると除去することが困難であり、機構部分の破損の原因となることもある。また、成形体1を水平面内で切断すると、上述したように、成形体1aにせん断力を加えることなく分離することができるという利点も得られる。\n\n【0097】\n\nプレス装置10で成形された成形体1は、搬送装置30によって、所定位置の成形体保持装置20にセットされるが、アーム34に回転機構を設けておくと、成形体1の任意の面に平行に切断することが可能になる。すなわち、成形体1の配向磁界の方向と切断面の方向を任意にできる。例えば、平行プレス法で成形された成形体1をそのまま成形体保持装置22にセットすると、残留磁化と直交する面内で切断することになるが、アーム34に鉛直面内で90°回転できる機構を設けると、残留磁化と平行な面内で切断することになる。あるいは、直角プレス法で成形された成形体1を残留磁化に直交する面内で切断することもできる。\n\n【0098】\n\n(実施形態3)\n\n図12は、本発明の実施形態3による焼結磁石の製造方法に好適に用いられる実施形態3のワイヤソー装置40の構成例を示している。\n\n【0099】\n\n図12に示したワイヤソー装置40は、切削液付与装置5を有する点において図1に示したワイヤソー装置と異なる。図1に示したワイヤソー装置と実質的に同じ機能を有する構成要素は共通の参照符号で示し、ここではその説明を省略する。\n\n【0100】\n\nワイヤソー装置40においては、切削液付与装置5によってワイヤソー4に切削液が付与された後、ワイヤソー4が成形体1と接触し、切断加工が行われる。切削液付与装置5は、切削液6を保持する容器5aと、容器5aから溢れた切削液を回収するパン5bとを備えている。切削液6は、容器5aの上部開口部から溢れる状態に維持され、容器5aの側面に設けられたスリット内を走行するワイヤソー4に付与される。\n\n【0101】\n\nここでは、切削液として、焼結磁石中に炭素として残留し難い、飽和炭化水素系溶媒(典型的にはイソパラフィンおよびノルマルパラフィン)を用いる。飽和炭化水素系溶媒の平均分子量は、120〜500の範囲内にあることが好ましい。平均分子量が120を下回るものは結合力が弱く、切削屑を効率的に凝集させることが難しい。また、平均分子量が500を超えるものは、焼結体中に残存する炭素量が多くなり、磁気特性を低下させるので好ましくない。平均分子量が140〜450の範囲内にあるものがさらに好ましい。\n\n【0102】\n\n飽和炭化水素系溶媒については、沸点で好ましい材料を特定することもでき、沸点が80℃〜250℃の範囲内にあるものが好ましい。沸点が80℃を下回るものは結合力が弱く、切削屑を効率的に凝集させることが難しく、沸点が250℃を超えるものは、焼結体中に残存する炭素量が多くなり磁気特性を低下させるので好ましくない。また、沸点が80℃を下回るものは、揮発性が高いので、作業環境を汚染しやすいという観点からも好ましくない。飽和炭化水素系溶媒としては、平均分子量が140〜450の範囲内にあるものまたは沸点が100℃〜230℃の範囲内にあるものがさらに好ましく、比較的少量でも、切削屑を効果的に凝集させ、排出することができる。特に、イソパラフィンは容易に除\n\n去され、焼結体中に残留する炭素量を低くできるので好ましい。以下に示す実施例では、(引火点:49℃、粘度:1.2mm2/sec、分子量:140〜150、沸点:166℃(初留温度)のイソパラフィンを用いた。\n\n【0103】\n\nさらに、切断後の成形体どうしの溶着をより効率的に防止するために、切削液に溶着防止粉を分散した分散液を用いても良い。ここでは、溶着防止粉としてY2O3粉末(イットリア粉末)を用いる。もちろん、溶着防止粉は、Y2O3粉末に限定されず、Al2O3やCなどの粉末やフレークを用いても良い。切削液中に分散させる溶着防止粉の量は、適宜設定されるが、例えば、10g/L以上500g/L以下の範囲に設定される。\n\n【0104】\n\n切削液中に溶着防止粉を分散させ、この分散液をワイヤソー4に供給するためには、図12の容器5a内に溶着防止粉が滞留しないように、分散液を撹拌することが好ましい。ワイヤソー4の表面に切削液とともに付着した溶着防止粉は、切断過程で形成される切断面に付着し、その後の焼結工程に成形体どうしが溶着することをより効果的に防止することができる。\n\n【0105】\n\n図12に示したワイヤソー装置40を用いた実施例について、切削液を用いることによって排出性が向上する効果を説明する。切削液としてイソパラフィンのみを用いた例と、イソパラフィンにイットリアを分散させた例(イットリア濃度:200g/L)と、切削液を用いない通常切断の例とを比較検討した。\n\n【0106】\n\n成形体1として、図12に示したような上面と下面とが互いに曲率の異なるアーチ状の成形体を用いた。成形体1の形成に用いた磁石粉末は、例えば、実施形態1の実施例と同じである。成形密度は4.2g/cm3である。\n\n【0107】\n\n上述の成形体1を駆動装置2の支持台に載置した状態で鉛直方向を含む面内に切断面を形成するように切断(縦切り)した。ワイヤソー4として、電着砥粒ワイヤソー(外径0.257mm、砥粒径40〜60μm)を用いて、ワイヤ送り速度230m/秒、切り込み速度150mm/minの条件で切断した。\n\n【0108】\n\nその後、切断された成形体どうしを分離する工程を特に行うことなく、切断後の状態のままで焼結工程を行った。得られた焼結体(切断された成形体)どうしの溶着の発生率および割れの発生率を評価した結果を表3に示す。サンプル数は、それぞれ約150個である。\n\n【0109】\n\nなお、焼結工程は、例えば約1000℃〜約1100℃の温度で、不活性ガス(希ガスや窒素ガス)雰囲気下、または真空中で、約1〜5時間実行される。必要に応じて、得られた焼結体を、例えば約450℃〜約800℃の温度で、約1〜8時間時効処理を行っても良い。なお、焼結体に含まれる炭素の量を減らし、磁気特性を向上するために、上記焼結工程の前に、必要に応じて、合金粉末に添加した潤滑剤や切断工程で用いた切削液を加熱除去してもよい。加熱除去工程は、潤滑剤や切削液の種類にもよるが、例えば、約 100℃から600℃の温度で、減圧雰囲気下で、約3時間〜約6時間実行される。ここでは、500℃で2時間とした。\n\n【0110】\n\n【表3】\n\n\n\n【0111】\n\n表3の結果からわかるように、ワイヤソー4に切削液を付与した状態で切断することによって、切削液を用いない通常切断に比べて、溶着率が大きく低減している。このように、切削液を付与することによって、製造歩留まりを向上出来ることがわかる。なお、割れの発生率には大きな差が認められないのは、切削液を付与することによって成形体の強度が低下しないためと考えられる。\n\n【0112】\n\nまた、表3に示したように、切削液を用いることによって、通常切断に比べ切断負荷が上昇している。これは、切削液が付与されたワイヤソー4を用いることによって、切削屑がワイヤソー4の表面に凝集して付着し、ワイヤソー4に引きずられて切断部から排出されるためであると考えられる。\n\n【0113】\n\nなお、切削液を用いることによって切断負荷が上昇したとは言え、その切断負荷の大きさは約30gf程度であり、非常に小さい負荷である。従って、図12に示したような異形状の成形体で、支持台と接触する部分の面積が小さく、切削負荷によって、変形や欠けなどが発生しやすい成形体であっても、高い歩留まりで切断することができる。このように、最終的な焼結磁石の形状に近い成形体を高い歩留まりで切断できるので、外形を整えるための後工程を省略あるいは後工程の時間を短くすることができる。\n\n【0114】\n\nまた、切断時の成形体に掛かる負荷(摩擦抵抗)を低減するために、図13に示すワイヤソー装置50を用いても良い。\n\n【0115】\n\nワイヤソー装置50では、略鉛直方向に走行しているワイヤソー4に対して、成形体1を略水平方向(図13中に白抜き矢印で示す。)に相対移動させることによって、鉛直方向を含む面内に切断面を形成するように切断することができる。従って、走行するワイヤソー4と成形体4とが接触する面積(切断部の長さ)が、図12のワイヤソー装置40を用いる場合よりも短いので、成形体1に対する負荷より低減することができ、よりスムーズな切断面が得られる。\n\n【0116】\n\nワイヤソーの走行方向4や成形体1の相対移動方向は、図12および図13に示した例に限られず、成形体1の形状などに応じて、適宜設定すればよい。なお、上述したように、切断部の長さが短くなる方向で切断することによって、スムーズな切断面が得られるので好ましい。\n\n【0117】\n\nまた、ワイヤソー装置50は、ケース9内にワイヤソーの駆動部と湿式集塵機7とを有している。このように、切断加工を行う位置の下部にワイヤソーの駆動部を配置することによって、切断加工およびそれに伴う工程(例えば成形体1の搬送など)を行う空間を十分に確保できる。また、図13に示したような湿式集塵機を用いて切削屑を回収液8に集めることによって、作業環境の汚染を防止することが出来る。ケース9内は、窒素ガスで置換することが好ましい。\n\n【0118】\n\n本実施形態3においては、浸漬法によって、切削液をワイヤソー4に付与する方法を例示したが、滴下法や噴霧法を用いてもよく、これらを組み合わせてもよい。さらに、切削液中に成形体を保持し、切削液中で切断加工を行っても良い。但し、切削液の処理などの問題があるので、少量の切削液で十分な効果が得られるように、浸漬法、滴下法や噴霧法を用いることが好ましい。また、浸漬法、滴下法や噴霧法によって切削液をワイヤソーに付与する構成は比較的簡単に構造または装置で実現できるので、例えば、実施形態2のワイヤソー装置20(図10)に適用することも出来る。\n\n【0119】\n\n上記実施形態において好適に用いられるR-Fe-B系希土類磁石粉末は、例えば、以下のような工程を経て作製される。\n\n【0120】\n\nまず、公知のストリップキャスト法を用いてR-Fe-B系希土類磁石合金の鋳片を作製する。具体的には、まず所望の組成の合金を高周波溶解によって溶融し、合金溶湯を形成する。この合金溶湯を1350℃に保持した後、単ロール法によって、合金溶湯を急冷し、厚さ約0.3mmのフレーク状合金鋳塊を得ることができる。このときの急冷条件は、例えば、ロール周速度約1m/秒、冷却速度500℃/秒、過冷度200℃とする。\n\n【0121】\n\nこのようにして形成された急冷合金の厚さは0.03mm以上10mm以下の範囲にある。この合金は、短軸方向サイズが0.1μm以上100μm以下で長軸方向サイズが5μm以上500μm以下のR2T14B結晶粒と、R2T14B結晶粒の粒界に分散して存在するRリッチ相とを含有し、Rリッチ相の厚さは10μm以下である。ストリップキャスト法による原料合金の製造方法は、例えば、米国特許第5,383,978に開示されている。\n\n【0122】\n\n次に、粗粉砕された原料合金を複数の原料パックに充填し、ラックに搭載する。この後、前述の原料搬送装置を用いて、原料パックが搭載されたラックを水素炉の前まで搬送し、水素炉の内部へ挿入する。そして、水素炉内で水素粉砕処理を開始する。原料合金は水素炉内で加熱され、水素粉砕処理を受ける。粉砕後、原料合金の温度が常温程度に低下してから原料の取り出しを行うことが好ましい。しかし、高温状態(例えば40〜80℃)のまま原料を取り出しても、原料が大気と接触しないようにすれば、特に深刻な酸化は生じない。水素粉砕によって、希土類合金は0.1〜1.0mm程度の大きさに粗粉砕される。なお、合金は、水素粉砕処理の前において、平均粒径1〜10mmのフレーク状に粗粉砕されていることが好ましい。\n\n【0123】\n\n水素粉砕後、ロータリクーラ等の冷却装置によって、脆化した原料合金をより細かく解砕するとともに冷却することが好ましい。比較的高い温度状態のまま原料を取り出す場合は、ロータリクーラ等による冷却処理の時間を相対的に長くすれば良い。\n\n【0124】\n\nロータリクーラ等によって室温程度にまで冷却された原料粉末に対して、ジェットミルなどの粉砕装置を用いて更なる粉砕処理を行い、原料の微粉末を製造する。上記の実施形態では、ジェットミルを用いて窒素ガス雰囲気中で微粉砕し、平均粒径(FSSS粒径)が3.0〜3.2μmの磁石粉末を得た。この窒素ガス雰囲気中の酸素量は10000ppm程度に低く抑えることが好ましい。このようなジェットミルは、特公平6-6728号公報に記載されている。微粉砕時における雰囲気ガス中に含まれる酸化性ガス(酸素や水蒸気)の濃度を制御し、それによって、微粉砕後における磁石粉末の酸素含有量(重量)を6000ppm以下に調整することが好ましく、3000ppm以下に調整することがさらに好ましい。磁石粉末中の酸素量が6000ppmを超えて多くなりすぎると、磁石中に非磁性酸化物の占める割合が増加し、最終的な焼結磁石の磁気特性が劣化してしまうからである。\n\n【0125】\n\n次に、この磁石粉末に対し、ロッキングミキサー内で潤滑剤を例えば0.3質量%添加·混合し、潤滑剤で磁石粉末粒子の表面を被覆する。潤滑剤としては、脂肪酸エステルを石油系溶剤で希釈したものを用いることができる。上述の実施形態では、脂肪酸エステルとしてカプロン酸メチルを用い、石油系溶剤としてはイソパラフィンを用いる。カプロン酸メチルとイソパラフィンの重量比は、例えば1:9とする。このような液体潤滑剤は、磁石粉末粒子の表面を被覆し、粒子の酸化防止効果を発揮するとともに、プレスに際して成形体の密度を均一化し、配向の乱れを抑制する機能を発揮する。\n\n【0126】\n\nなお、潤滑剤の種類は上記のものに限定されるわけではない。脂肪酸エステルとしては、カプロン酸メチル以外に、例えば、カプリル酸メチル、ラウリル酸メチル、ラウリン酸メチルなどを用いても良い。溶剤としては、イソパラフィンに代表される石油系溶剤やナフテン系溶剤等を用いることができる。潤滑剤添加のタイミングは任意であり、微粉砕前、微粉砕中、微粉砕後の何れであっても良い。液体潤滑剤に代えて、あるいは液体潤滑剤とともに、ステアリン酸亜鉛などの固体(乾式)潤滑剤を用いても良い。\n\n【0127】\n\n上記磁石粉末は、0.5MA/m以上1.5MA/mの配向磁界を圧縮方向に垂直または平行に印加された状態で、公知のプレス装置により成形される。\n\n【0128】\n\n以上、酸化しやすく、加工しにくいR-Fe-B系焼結磁石について本発明を説明してきたが、本発明を他の材料からなる希土類焼結磁石や他の焼結磁石に適用することも可能である。\n\n【0129】\n\nまた、成形体を切断する例を説明したが、ワイヤソーに対して成形体をNC制御によって2次元または3次元的に相対移動させながら切削加工することによって、成形体の外形加工に利用することもできる。これによって、弓形形状やかまぼこ形状等、任意の形状に成形体を切り出すことができる。\n\n【0130】\n\n【発明の効果】\n\n本発明によれば、焼結前の比較的柔らかい状態の成形体を細いワイヤソーで加工するため、加工負荷を低減し、しかも、成形体の発熱を抑えることができる。このため、酸化しやすい磁石粉末を用いて磁石を製造する場合でも、最終的な磁石特性を劣化させることなく、加工のための時間を大幅に短縮でき、製造コストを大きく低減することができる。また、従来の回転刃による場合に比べて切断代を低減できるため、材料の歩留まりが向上する。\n\n【図面の簡単な説明】\n\n【図1】本発明に好適に用いられるワイヤソー装置の一構成例を示している。\n\n【図2】従来の焼結体を切断する場合と、本発明による焼結前の成形体を切断する場合について、製造工程数の違いを説明するフローチャートである。\n\n【図3】本発明の実施例で用いたワイヤソーの構成を模式的に示す斜視図である。\n\n【図4】磁石粉末中に液体潤滑剤を添加した場合について、加工負荷の成形密度依存性を示すグラフである。\n\n【図5】潤滑剤を添加した場合における加工負荷のワイヤ送り速度依存性を示すグラフである。\n\n【図6】潤滑剤を添加した場合における加工負荷の切込速度依存性を示すグラフである。\n\n【図7】(a)は、磁石粉末中に潤滑剤を添加した場合について、切断面の焼結後における面精度(うねり)と成形密度との関係を示すグラフであり、(b)は、切断面のうねり測定範囲(約32mm)を示す斜視図であり、(c)は、うねりの測定データ(段差データ)を示すグラフである。\n\n【図8】本発明においてワイヤソーで成形体をスライスした場合の好ましい焼結方法を説明する図面である。\n\n【図9】本発明に好適に用いられるワイヤソー装置を備える成形体加工装置の構成を模式的に示す図である。\n\n【図10】本発明に好適に用いられる他のワイヤソー装置の構成を模式的に示す図である。\n\n【図11】ワイヤソー装置が備える成形体保持装置の構成を模式的に示す分解斜視図である。\n\n【図12】本発明の実施形態3において好適に用いられるワイヤソー装置40の構成を模式的に示す図である。\n\n【図13】本発明の実施形態3において好適に用いられる他のワイヤソー装置50の構成を模式的に示す図である。\n\n【符号の説明】\n\n1:成形体(グリーン)\n\n2:駆動装置\n\n3a、3b、3c、3d:ロール\n\n4:ワイヤソー\n\n5:切削液付与装置\n\n6:切削液', '【0001】\n\n技术领域\n\n本发明涉及一种制造烧结磁体的方法。\n\n【0002】\n\n发明背景\n\n通过压制通过粉碎稀土磁铁(原料合金)(原料合金)而形成的合金粉末制备稀土烧结磁体,然后进行烧结步骤,老化热处理步骤和加工步骤。目前,两种类型的稀土烧结磁铁广泛用于稀土和钴磁铁和稀土 - 铁和硼基磁体的每个领域。其中,稀土,铁,基于硼基磁体(以下称为“R-Fe-B基磁体”。R是选自稀土元素和钇中的至少一种元素,Fe是铁, B是硼的原因是,最高磁能产品在各种磁体中示出,价格也相对较低,因此它被主动采用各种电子设备。 Fe的一部分可以用诸如CO的过渡金属元素代替。此外,它可以被碳代替硼的一半。\n\n【0003】\n\n为了生产具有所需形状的烧结磁体,首先,通过用压缩装置压缩成型R-Fe-B基稀土磁粉,具有比最终磁体产品更大的模制体。。然后,在通过烧结工艺将模塑体制成烧结体之后,通过由硬质合金或旋转磨轮等制成的刀片源研磨烧结体,并且施加所需的形状。例如,在制造具有块状的烧结体之后,通过用叶片等切割烧结体切出多个板状烧结体部分。\n\n【0004】\n\n本发明要解决的问题\n\n然而,由于诸如R-Fe-B基磁体的稀土合金磁体的烧结体非常坚硬且易碎,因此难以高精度研磨,并且处理时间更长。因此,处理过程是制造成本增加的重要来源。\n\n【0005】\n\n为了解决这样的问题,已经提出在烧结之前研磨模塑体(绿色)(日本专利公开No.8-64451和JP-A-8-181028)。\n\n【0006】\n\n上述日本专利申请公开No.8-64451公开了一种用于倒倒弧形铁氧体磁体紧凑型具有旋转磨轮或旋转刷的技术。当该技术应用于具有高氧化反应性的R-Fe-B基磁体的粉末成型体时,在旋转砂轮,旋转刷和模制体之间产生摩擦热,因此稀有的地球元素和熨斗在大气中急剧和水分响应,是最坏的情况,有可能发生模制体的烧制,即使它不含有这样的情况,磁体的磁特性也会降低。。\n\n【0007】\n\n日本专利申请公开No.8-181028,为了防止在绿色工艺时氧化成型体,将模塑主体浸入矿物油,合成油或植物油中,并模塑通过加工的刀片切割体,该固定刀片在该状态下旋转模制体。公开了处理。\n\n【0008】\n\n然而,根据该JP-A-8-181028中描述的技术,在切割之后,从模塑体中除去矿物油等的脱脂步骤是必要的,并且如果脱脂不足,则油功能中包含的碳含量作为烧结过程中的杂质,并且磁体特性劣化。\n\n【0009】\n\n另外,在使用上述刀片源的处理方法的情况下,还存在模塑体的切割费大的问题,并且材料的产量很差。\n\n【0010】\n\n鉴于此类点,已经提出了本发明,并且其主要目的是提供。\n\n【0011】\n\n[解决问题的手段]\n\n根据本发明的制造烧结磁体的方法是制造烧结磁体的方法,以及制造磁体粉末的模制体的步骤,以及使用电线锯加工模塑体的过程,以及模制的方法身体。包含连接步骤。\n\n【0012】\n\n在优选实施例中,线锯具有外径为0.05mm或更大且3.0mm或更小的导线,并且固定到电线的研磨颗粒。\n\n【0013】\n\n在优选实施例中,处理模制的过程包括将模制体切成多个部件。\n\n【0014】\n\n在优选实施例中,处理模制体的过程是通过相对于线锯移动模制体和沿切割表面来切割成型体的同时切割成型体的步骤。它包括相对于涉及的过程电线再次锯。\n\n【0015】\n\n在优选实施例中,在处理模制体的处理过程中的相对运动在水平面中执行并且还包括离开由切片步骤在垂直方向上获得的多个部分的步骤。\n\n【0016】\n\n在优选实施例中,在处理模制体的过程之后,进一步包括将防焊粉末放置在多个部件的间隙中的过程。\n\n【0017】\n\n在优选的实施方案中,其特征在于,在惰性气体气氛中加工模塑体的过程,其中氧浓度调节至总计5%或更高,18%或更低。\n\n【0018】\n\n在优选实施例中,其特征在于,在将切割流体(也称为“润滑流体”)的状态下施加到与电线锯的模制体接触的部分的状态下进行加工模制体的过程。 。\n\n【0019】\n\n切割流体优选含有烃基的有机溶剂,烃基溶剂优选含有异戊烷。\n\n【0020】\n\n进一步优选切削液是含有抗电解粉末的分散体。\n\n【0021】\n\n在优选实施例中,使用浸渍方法,滴加方法或喷涂方法将切割流体施加到线锯。\n\n【0022】\n\n在优选实施例中,该过程在切割流体过程中进行。\n\n【0023】\n\n在一个优选的实施方案中,制造模塑主体的步骤包括将润滑剂添加到磁体粉末的步骤。\n\n【0024】\n\n在优选的实施方案中,磁体粉末的残余磁化为0.001t至0.1t。\n\n【0025】\n\n在一个优选的实施方案中,磁体粉末是R-T-B基稀土合金(R是选自稀土元素和钇中的至少一个元素,T是过渡金属元素,B是硼)它是粉末的此外,磁体粉末的平均粒径(FSSS粒径)优选在2.0μm至8.0μm的范围内。\n\n【0026】\n\n发明内容\n\n在本发明中,使用在烧结之前使用电线锯加工磁体粉末的模制品。电线锯是一种用于将模塑主体压制成型体以在一个方向上或双向处理的构成体,并通过导线和模制体之间的磨粒来处理模制体。\n\n【0027】\n\n本发明人的发明人是易于氧化的稀土合金磁体粉末的模制体在烧结之前加工,允许由正常旋转叶片等引起的发热和点火问题。标题,它到达本发明的上下文。\n\n【0028】\n\n在本发明的一个优选实施例中,具有磨粒的导线固定到表面上。线芯线优选地由具有高抗拉强度的材料形成,例如,硬钢丝(钢琴线),诸如Ni-Cr,Fe-Ni,诸如W或Mo的高熔点金属的合金,或尼龙纤维。它由捆绑形成。另外,如果电线太厚,切割费增加,因此材料的产量减小。相反,如果电线太薄,则可以通过处理负荷切割线。此外,由于切削抗性增加,因此导致发热和点火。因此,本发明中使用的导线的外径优选设定为0.05mm以上且3.0mm或更小。更优选的线的外径为0.1mm或更大,1.0mm或更小。这里,导线锯是宽的,即切割方向的宽度为3.0mm或更小为3.0mm或更小,并且包括例如宽度为3.0mm或更小的带锯。\n\n【0029】\n\n另一方面,研磨晶粒由高硬度材料形成,例如金刚石,SiC或氧化铝\n\n优选地,其粒度通常为10μm以上且1000μm或更小。磨粒优选通过诸如树脂膜的粘合层固定到线芯的表面上。作为树脂膜,可以使用酚醛树脂,环氧树脂和聚酰亚胺树脂。树脂膜的厚度为约0.02mm至1.0mm。\n\n【0030】\n\n另外,可以使用金属膜等而不是作为粘合层的树脂膜固定磨粒。例如,通过电沉积方法(电镀方法)可以称为“电沉积晶粒线”的电线(有时称为“电沉积晶粒线”,并且磨料谷物的突出量比其固定有磨料晶粒的磨料磨粒可以很大,优选的是,在切割碎片(切割粉末或污泥)的可放电方面是优异的,因为它可以很大。而且,如果可以获得足够的强度,可以使用线。当使用该线时,可以进一步改善切割废物的可放电。如稍后所述,当切削液用于增强切割废物的放电时,优选从对切割液体的抗性的观点来看,使用电沉积颗粒线。\n\n【0031】\n\n从切割效率的观点来看,磨粒的平均粒径D优选地满足30μm≤d≤1000μm的关系,更具体地,优选满足40μm≤d≤200μm之间的关系。此外,从切割效率和切割碎片的观点来看,线锯的行进方向上的相邻研磨剂之间的平均距离在磨粒的平均粒径D的200至600%的范围内。优选地,突出量在15μm至500μm的范围内。\n\n【0032】\n\n模塑主体被在按压时施加的定向磁场磁化。即使模塑主体被用于去除该磁化的目的,也存在约0.001吨至0.1t的残余磁性。尽管可以使残留磁数小于这一点,但是由于过程的数量增加,这不是优选的。由于具有剩余磁场,当用线锯切割成型体时,如果切割费减小,切割物质通过剩余磁源将切割物粘附到切割表面上,因此难以分离成型体。。为了避免这样的问题,优选提供0.1mm或更大的肉排。\n\n【0033】\n\n另外,可以使用其中磨料颗粒未固定到表面的线(自由磨料型线),但在这种情况下,晶粒而不是固定到表面切割碎片的线(固定磨料型线)不太可能出院,并且切割槽(切割槽)可以相对容易受到切割槽的影响,并且粘附到切割表面的切割废料可以通过上述残留磁源增加。因此,优选使用固定的磨料型线,这易于分离成型体。\n\n【0034】\n\n当模制体切成多个部件时,线锯可以沿着切割表面相对移动,一旦形成以使其容易分离成型体。通过沿着切割表面再次通过线锯,留在模制体的间隙中的切割肉汤被排出,并且可以分离成型体而不产生芯片。优选地保持由第一切口形成的凹槽(多个模制的间隙)沿着线锯部分再次通过。\n\n【0035】\n\n此外,为了改善切割过程中的切割废料的放电,可以在将切割液施加到与金属锯的模制体接触的部分的状态下切割成型体。通过将切削液施加到电线锯上,切割乳房容易粘附到电线锯上,并且切割乳房(粉末)可以容易地聚集,因此更多的切割废料粘附到钢丝锯和切割部分的排放物中它将完成。\n\n【0036】\n\n此外,由于机械强度低,机械强度低,但担心使用切割溶液的使用可能很容易损坏,而是根据本发明的实验,通过使用切割溶液来源的强度减小\n\n没有观察到产量下降。相反,通过使用切削液,切割围绕的放电性能得到改善,模制体可以通过更高的概率分离,制造过程的简单性和/或改善其可以完成的制造产量。\n\n【0037】\n\n例如,当将顶表面和下表面切割并加工成具有不同曲率的不同拱形模制品时,执行切割,使得切割表面形成在包括模塑主体的状态下的垂直方向的平面中放置在支撑件上(切割后垂直),即使将切割体分离的过程被分离,即使它是烧结的,也使得模制体焊接的发生率低,并且制造产量充足获得。可以。\n\n【0038】\n\n作为切削液,优选使用非水切割溶液(有机溶剂或油基切削液)以避免模塑主体的氧化,并且难以纳入烧结磁体中的碳,烃基有机溶剂。优选使用。特别地,饱和烃溶剂(例如,异烷烃和正常的石蜡)是优选的,因为它们易于除去。此外,为了防止在切割之后更有效地焊接成型体,可以使用其中消除粉末分散在切割液中的分散液体。\n\n【0039】\n\n切割流体可以使用浸渍方法,滴定方法或喷涂方法施加到线锯,或者可以在切削液中进行模制体的处理。\n\n【0040】\n\n在下文中,将参考附图描述本发明的实施例。\n\n【0041】\n\n实施例1\n\n图。图1示出了根据适用于本发明的第一实施例的导线锯装置的配置示例的示例。所示的装置设置有待处理(绿色)1的驱动装置(绿色)1,并驱动到上部和下部(z轴方向),以及多个辊3a,3b,3c和3d。\n\n【0042】\n\n在电线锯4中,上述研磨颗粒固定到导线上,并且缠绕在辊3a至3d并在平行于y轴的方向上行进。线锯4以X轴方向的相等间隔布置,并且布置间隔(线间距)由从堵塞的模制体1切割的每个板状部分的尺寸(厚度)任意设定。在适当施加本发明的应用中,例如,在约1mm或更大约30mm或更小的范围内设定线间距。\n\n【0043】\n\n考虑到导线强度和切割电荷,用于线锯4的导线的外径优选地设定在0.05mm至3.0mm的范围内。当通过线锯4切割烧结后的硬烧结体时,将约20至40n的张力施加到电线上。另一方面,在本发明中,为了在烧结之前处理软成型体1,施加到电线的张力在0.1至10n下也相对较低,因此切割抗性小,相对氧气即使具有高气氛的浓度,也可以切割和加工模塑体而没有出点火和氧化的任何问题。\n\n【0044】\n\n在线锯4中,可以在加工时将诸如异丙烷烃或乙醇的有机溶剂作为切割液体供应。然而,尽管切削液的供应不是必需的,但是如后面所述,可以提高切割肉汤的可放电。\n\n【0045】\n\n钢丝锯4的Y轴方向速度(vy)在本文中称为“送丝速度”。通过以预定的送丝速率行进的线锯4向压制成型体1,可以将模制体1切割和切割成多个部件。将模制的主体1压到电线4(V.z在所示的示例中,所示的示例对应于驱动器的Z轴方向上的驱动速度,在此被称为“切换速度”。\n\n切割速度越快,处理所需的时间越短。\n\n【0046】\n\n线反馈速度和切口速率大大影响了处理负荷的值,从稍后描述的实施例的描述中显而易见。为了在适当的范围内拟合处理负荷,切割速率优选设定为例如30mm / min或更高,1200mm / min,更优选为30mm / min或更高,800mm / min。\n\n【0047】\n\n线锯4可以不仅沿一定方向行进,而且可以沿着Y轴方向执行往复操作(往复操作)。在这种情况下,例如,具有多个线的矩形框架可以通过气缸等在Y轴方向上线性往复运动。而且,代替气缸,可以采用具有电动机和曲柄的装置。\n\n【0048】\n\n图2是用于切割根据本发明在烧结之前的成型体的切割的情况的流程图,并切断了制造过程的差异。如图1所示。如图2所示,在传统例子中,首先,制备原料粉末的步骤,按下粉末的步骤,烧结模制体的步骤,以及切割烧结体的步骤,以及切割烧结体。有必要执行每个步骤,例如对部件进行零件的过程。另一方面,在本发明中,在压制步骤之后,在烧结过程之前切割成型体(绿色),并且制造具有靠近最终磁铁产品的形状和尺寸的模制体部分。因此,在本发明中,为了切割显着柔软且易于加工的模制体(绿色),切割所需的时间显着降低。\n\n【0049】\n\n根据本发明,当使用传统的旋转刀片等时,线锯和模制体之间的接触面积小于接触面积,并且由于摩擦引起的热量量非常小。例如,在传统的旋转刀片的情况下,接触面积为1000至10000mm2根据本发明,根据本发明,接触面积为5至50mm。2它可以抑制到程度。因此,即使在大气中进行线锯处理,也可以充分避免稀土合金粉末的氧化和点火问题。\n\n【0050】\n\n然而,即使在本发明的情况下,即使在本发明的情况下,抑制磁体粉末的氧化,并且减小了磁体粉末的氧化,并且当磁体粉末的氧浓度超过3000ppm的重量比时,氧浓度是摩尔。优选在惰性气体气氛中进行线锯加工,调节至10%或更高,15%或更少的比率。特别地,在使用缺氧磁体粉末制造模塑体的情况下,用重量比为3000ppm或更小,磁体粉末的氧化反应性显着强烈,因此氧浓度比氧气浓度更严重上面。希望用有限的环境进行线锯加工(例如,惰性气体气氛以摩尔比为2%以下的氧浓度为2%以下)。控制上述范围内的氧浓度是可以部分地包围执行切割处理的装置,并且可以在不完全将线锯装置与大气中分离的情况下实现。当以这种方式切割成型体时,优选控制大气。\n\n【0051】\n\n此外,在如上所述在气体中加工干成型制品的情况下,优选在成型到磁体粉末之前在模塑之前加入固体或液体润滑剂(例如,脂肪酸酯)。这是因为通过在粉末表面上形成的润滑剂的膜防止氧化。另外,在制造模制体之后,在加工之前可以充分地排放到模制体之后。这种润滑剂优选是可以在随后的烧结步骤中容易地从模塑体中除去的润滑剂。\n\n【0052】\n\n在使用传统的旋转叶片的情况下,切割费可以大(例如,0.5mm),并且切割废物可以灰尘并散布在切割部分周围。散落切割肉汤火灾时是非常危险的。然而,在使用根据本发明的线锯的情况下,可以大大抑制切割围绕的散射,因此可以安全地执行工作。\n\n【0053】\n\n另外,根据本发明的线锯方法可以在有机溶剂中进行,例如由异戊烷代表的饱和烃溶剂。在这样的有机溶剂中,由于脱脂容易,在标准烧结过程中从模塑体中除去,而不引入特殊的脱脂步骤。因此,没有问题是有机溶剂中的碳使烧结磁体的磁性降低。\n\n【0054】\n\n接下来,将描述根据本发明的第一实施例的实施例。\n\n【0055】\n\n在本实施例中,如图2所示。如图3所示,从下面升高的模制体(绿色)通过设置在三排中的线锯切割在空气气氛中。线锯的线外径(线径)为0.24mm,线间距为5mm。要加工的模塑体(绿色)为26质量%(ND + PR),5重量%,1重量%B,1重量%CO,0.2重量%,0.1重量%Cu,和残留Fe的合金组成。使用已知的压制装置形成磁体粉末(FSSS粒径:3.0至3.2μm)。用于磁场取向的施加磁场约为1.2吨。模制体具有大致矩形的形状,其尺寸为15mm高度×41.7mm宽×66.2mm深度。\n\n【0056】\n\n在每个线和模制体之间的接触部分长度中,模制体与金属锯的布置关系设定为41.7mm。另外,通过称重电池(未示出),测量在模制体上升时经受电线锯的处理负荷(加载向下方向)。此外,在该实验中,导线进给速率和切口速率在100-150米/分钟的范围内,切口速率在150至420mm / min的范围内变化。\n\n【0057】\n\n图。图4是表示处理负荷的模制密度依赖性的图。在图4所示的示例中,如图4所示,送丝速率为150米/分钟,切口率为150毫米/分钟。\n\n【0058】\n\n从图4中可以看出。在图4中,随着模塑密度的增加,处理负荷增加。然而,如果模塑密度变得太小,则模塑密度为至少3.6g / cm,因为存在成型体的强度降低并且模制体的裂缝变得可能发生的问题。3这些是必要的。从各种各样的视角,优选的成形密度范围为3.8g / cm3超过5.0g / cm3它在下面。考虑到烧结后的磁性和由于模制体的裂缝和碎裂的发生而产生的产率,模塑体的密度为4.0g / cm3超过4.7g / cm3更优选地,如下。磁体粉末(合金材料)的真实密度为7.5g / cm3这是。\n\n【0059】\n\n图。图5是表示处理负荷的送料速率依赖性的曲线图。这里,切口速率为150毫米/分钟。图。图6是示出添加润滑剂时处理负荷的切口速率依赖性的曲线图。这里,送丝速率为150米/分钟。\n\n【0060】\n\n从图5中,应当理解,随着送丝速度的增加,处理负荷减小,并且随着切割速度从图5减小,处理负荷减小。当导线进给速率和切口速率设定为不适当的电平时,由于处理负荷导致模制体的切割表面大致缓慢。具体地,当加工负荷增加时,在切割表面上形成锯片,并且在表面上不能忽略不均匀性。因此,烧结后施加到处理的步骤的数量增加。另外,切割后模塑主体的边缘部分的碎裂速率增加。\n\n【0061】\n\n图。图7A是示出表面精度(“波纹”或“表面粗糙度”)之间的关系的曲线图,以及切割表面烧结后的模制密度。这里,送料速率为150米/分钟,切口速率为150毫米/分钟。图。图7(b)显示了切割表面的波纹测量范围(约32\n\n图3是表示MM的透视图,图7(c)是表示波动的测量数据(步骤数据)的图。图2的曲线图。基于图7的数据创建图7A。7C。\n\n【0062】\n\n从图1中可以看出。如图7(a)所示,模塑密度高(例如,4.3g / cm3如上所述,可以看出烧结体的表面精度变得更好。\n\n【0063】\n\n接下来,对于通过本发明方法和烧结后已经切割的比较例在烧结之前,可以获得作为最合适的表面精度的切削速度。并且在烧结后已经切割的比较例。和描述了送丝速率。\n\n【0064】\n\n【表格1】\n\n\n\n【0065】\n\n如表1所示,当导线锯切粘合到如本发明中的软成型体中,即使在相对较慢的送入速率下,也可以实现比较例的切口率的200多倍。通过减少加工负荷的降低而改善切口率,并且与缩短过程时间直接相关。\n\n【0066】\n\n接下来,对于本发明的实施例,烧结和抛光尺寸的变化描述于下表2中。\n\n【0067】\n\n[表2]\n\n\n\n【0068】\n\n由线锯切割后立即模制体的厚度设定为4.76mm。该尺寸是通过从线间距(5mm)中拉出线外径(0.24mm)而获得的计算值。\n\n【0069】\n\n通过烧结将模塑主体的厚度接近30%,烧结体的厚度进一步降低约0.1mm。烧结收缩在压力机中施加的方向磁场中最为明显。在本实施例中,在模塑主体的厚度方向上施加磁场以定向粉末。\n\n【0070】\n\n通常,由于进行了烧结后烧结后的烧结体进行,因此切割电荷与烧结体厚度的比率大。另一方面,为了在本发明中收缩之前切割模制体,即使使用的线的外径相等,也占据了模制体的厚度的切割费比相对较小。这导致通过切割丢失的材料减少并且大大有助于提高材料的产量(利用效率)。\n\n【0071】\n\n接下来,参考图1.如图8所示,当模制体由线锯切割时,优选的烧结方法(在烧结时布置成型体的方法)。\n\n【0072】\n\n如图1所示。如图8所示,当在彼此靠近导线锯的模制体切断的每个切割表面的状态下进行烧结过程时,存在切割表面彼此接口的问题。如果断开是小的,则特别可能发生这种焊接。对于切割表面的间隙,以避免烧结焊接,例如y2O.3优选放置抗焊接粉末,例如粉末。抗焊粉末只要由难以与磁铁的稀土元素反应的材料形成2O.3不限于粉末。例如,al2O.3可以使用粉末和诸如C等薄片。\n\n【0073】\n\n另外,在由线锯切割之后,如下图所示。如图8所示,可以设置为扩散的每个切割表面的间隙,或者可以分开地执行烧结过程。在这种情况下,期望设置在烧结台上的模制物体之间的距离扩散到0.1mm或更大。\n\n【0074】\n\n实施例2.\n\n图。图9示出了适用于适用于本发明的第二实施例的具有线锯装置20的磁体的粉末模制体制造装置100的配置示例。\n\n【0075】\n\n用于磁体的粉末模制体制造装置100包括压制成形装置10和线锯装置20。磁体粉末成型装置100还传送带16,用于将模制体1从压制装置10输送到线锯装置20,并且用线锯装置20切成烧结壳体50的模制体1a成型体图1从传送带42从传送带16输送到线锯装置20,并且模制体1从线锯装置20和传送装置30设置,用于将切割成型的模制体1a输送到输送装置皮带42.ing。\n\n【0076】\n\n用于磁体的粉末成型装置100由保护壁70包围,使得空气可以用氮气代替,以至少将气丝锯装置20周围的大气中的氧浓度降低。这里,通过通过保护壁70从输送带16的中间烧结并将氮气向保护壁70供应氧气浓度在上述范围内控制氧气浓度。\n\n【0077】\n\n接下来,将描述用于磁体的粉末模制设备100的操作。\n\n【0078】\n\n压制成型装置10具有上冲头14a,下冲头14b,模具14c,用于操作这些的机构,以及控制机构(两者都未示出)。使用进料器箱12使用馈线12通过上冲头14a和在模具14c的上表面上形成的空腔中的上冲​​头14a制造成型体1和制造模制体1的磁粉末。 。压制成形装置10可以具有磁路(未示出),并且可以具有能够在压模期间将定向磁场施加到磁性粉末的结构。定向磁场的方向可以平行于压力机方向,或者可以与压力机方向正交。此外,可以在压制成形装置10中提供用于产生退磁磁场的磁路(未示出)。\n\n【0079】\n\n由压制成形装置10制造的模制体1由输送带16传送到保护壁70中,在该保护壁70中设置有线锯装置20。通过布置用于在输送带16中产生去磁磁场的磁路(未示出),并且模制体1设置有用于吹送惰性气体的机构,例如氮气,附接到模制体的磁粉1被删除。可能是\n\n【0080】\n\n通过传送带16进入保护壁70的模制体1被传送装置30的臂34设定为设置在安装台28上的线锯装置20。转移装置30是\n\n臂34和36具有两个臂34和36,例如借助于例如磁体卡盘(磁吸附保持机构),去除和拆卸(保持/打开)模制体1或切片成型体1a 。臂34和36可以彼此垂直地移动,并沿轨道32移动。臂34和36的操作可以例如由定序器控制并由彼此独立地控制或者互锁。臂34和36可以例如使用气缸保持模制体1。\n\n【0081】\n\n如稍后将详细描述的,模制体1由线锯装置20水平切成并加工成多个模制物体1a。通过电动机26驱动滚珠丝杠27,模制的主体保持装置22相对于导线锯单元24移动,并且由线锯单元24的线锯24b切割成型体1。通过改变电动机26的旋转速度,可以将相对速度(切割速率)调节到模制体1的线锯24b。多个形成的模制件1a被臂34吸附并保持并从线锯装置20转移到安装台28上的缩回位置。\n\n【0082】\n\n放置在安装台28上的缩回位置的模制体1a被转移到设置在运输带42上的托盘44上,同时逐个通过臂36分离并一个接一个地分开。在本实施例中,由于模制体1是切片(切割),使得切割表面形成在水平方向上,所以模制体1a的上表面(或切割表面)被臂36吸附,并且臂36在沿方向移动时垂直地垂直,垂直于切割平面作用的力并且剪切力基本上不会产生切割表面上的剪切力,从而可以抑制模制体1a中的缺陷。\n\n【0083】\n\n接下来,在将预定数量的模制物体1a容纳在托盘44中之后,托盘44通过运输带42输送到烧结壳体50中。烧结壳体50具有由多个支撑杆52形成的多个储存架,并且调节了通过升程60的垂直移动从传送带42接收托盘44的存储架的高度。\n\n【0084】\n\n在容纳烧结壳体50中的预定数量的托盘44之后,烧结壳体50被传送到烧结炉。在下文中,通过与第一实施例相同的过程产生烧结磁体。\n\n【0085】\n\n接下来,将参考图4和图5详细描述第二实施例的线锯装置20的结构和操作。10和11。\n\n【0086】\n\nWiso装置20具有模制的主体保持装置22和线锯单元24。\n\n【0087】\n\n如图1所示。如图11所示,模制体保持装置22具有底板22a,后板22b和两个侧板22c。背板22b具有用于接收已经切割成型体1的线锯的凹槽26。凹槽26尽可能多地具有尺寸(宽度和深度)以容纳电线锯。如果没有形成凹槽26,则通过在后板22b和模制体1a之间形成间隙,由后板22b到达的线锯在垂直方向上或成型体1的切割端。可能是碎片。两个侧表面板22c中的每一个设置有用于通道通道的狭缝23,并且模制体1和切片模制体1a夹在切割过程中的一对侧板22c之间。有。\n\n【0088】\n\n模制体1放置在模制体保持装置22的底板22a上,并且相对于导线锯单元24保持,同时夹在一对侧面平面22c之间并由后板22b支撑。后板22B和侧板22C例如是未示出的气缸等。\n\n切割后模制体1夹在并释放。\n\n【0089】\n\n如图1所示。如图10所示,线锯单元24具有由三个固定磨料线锯24b拉伸的框架24a,并且框架24a可通过设置在安装台28上的轨道25滑动它。框架24a连接到连接到电动机24c的曲柄24d,并且根据电动机24c的旋转,如箭头A沿轨道22所示往复运动。\n\n【0090】\n\n在用模制体保持装置22保持模制体1的同时,相对于图中箭头B中的方向往复运动的导线24b相对于图中的箭头B的方向移动。也就是说,在穿过模制体保持装置22的侧表面板22c的狭缝23的同时,线锯24b到达后板22b的槽26,并且切割成型体1并成为多个模制1a 。此后,模制的主体保持装置22在反向方向上移动(缩回),同时通过模制的主体保持装置22(图中的箭头B箭头B)递送切割成型体1a的同时往复运动。如上所述,通过沿着切割表面(多个模制件1a的间隙)再次通过线锯24b,去除残留在切割表面上的切割废物。\n\n【0091】\n\n由于线锯24b的直径相对较小并且切割肉汤的放电低,因此许多切割轴可以保留在模制体1a之间,并且模制体1a不能容易地拆卸并且不能容易地分离。特别地,由于通过施加定向磁场的模制体的磁粉具有残余磁化,因此切割肉汤的可放电低。在这样的状态下,当模制体1a被分离时,在模制体1a中可能发生碎裂,但如上所述,通过沿着切割表面再次通过线锯24b,留在间隙中的模制体1a伴随切割被移除,并且可以分离成型体1a而不会引起碎裂。也就是说,如上所述,模制体1a的上表面被磁体卡盘吸附并保持,并且通过向上拉动,模制体1a可以逐个分开。\n\n【0092】\n\n由于第二线锯24b的通过是移除切割肉汤的目的,因此可以比切割时的线锯24b的通过速度(切割速度)更快。如果第二线锯24b的通道速度太慢,则可以不充分获得切割废料的放电效果,因此优选的是在切割时以等于或高于通过速度的速度通过。另外,尽管第二线锯24b的通过方向不一定是不需要反转切割时间的情况,但是模制的主体保持装置22可以组合以返回到接收下一个模制体1的位置。优选反转突破。\n\n【0093】\n\n这里,尽管通过移动模制体1和相对于水平面的线锯24b来举例说明,但是本发明不限于此,并且如第一实施例所示,模制体1和线锯24b也在平面中的配置中垂直垂直地,可以通过再次相对于切割表面通过导线锯24b来获得效果。\n\n【0094】\n\n没有限制拉伸到框架24a的线锯24b的数量,并且线锯24b的张力(例如,0.05 n至10 n)是模制体1的硬度(易于处理)切换速度。它可以适当设置。模制体保持装置22的移动速度(切割率)根据线锯24b的厚度适当地设定,进给速度(行进速度),模制体1的硬度等。正确调整,可以平滑切割表面,并且可以降低诸如抛光过程的步数。\n\n【0095】\n\n这里,尽管使用电动机24c和曲柄24d往复运动,但是曲线锯24d的方法不限于此,并且可以使用各种已知方法。例如,可以像大线锯装置一样往复电线,\n\n它可能在一个方向上运行。此外,也可以使用无尽的线锯。由于模制体1易于切割,因此线锯的磨损很小,因此新线的供应不是必需的,并且可以使用各种驱动方法。\n\n【0096】\n\n然而,如图所示,当模制体1a和线锯24b相对于水平面移动时,并且线锯24b在水平面中往复运动时,由切割产生的切割废物是一种机构(即,电动机24c,曲柄。)。由于24d,电动机26和滚珠丝杠27上没有散射,因此有一个优点是设备的维护。当散射在机构部分中时,难以拆下具有残余磁化的磁粉,这可能导致机构部分损坏。另外,当模制体1在水平面中切割时,如上所述,还可以获得优点,即可以在不添加剪切力的情况下分离成型体1a。\n\n【0097】\n\n由按压装置10形成的模制体1在通过传送装置30处以预定位置设定为模制体保持装置20,但是当旋转机构设置在臂34上时,模制体1是可以的平行切割。也就是说,模制体1的定向磁场的方向和切割表面的方向可以是任意的。例如,当由并联压制方法形成的模制体1被设定为模制的主体保持装置22时,它将被切割在与残余磁化的平面中,但是可以在其上旋转90°的机构臂34中的垂直表面将在平行于残余磁化的平面中切割。或者,可以在与残余磁化强度正交的平面中切割由直角压力法形成的模制体1。\n\n【0098】\n\n实施例3.\n\n图。图12示出了适用于根据本发明第三实施例的烧结磁体的制造方法的第三实施例的线锯装置40的配置示例。\n\n【0099】\n\n图1所示的线锯装置40包括:图12所示的线锯装置与图12所示的线锯装置不同。如图1所示,提供切割流体施加装置5。具有与图1所示的线锯装置具有基本相同的功能的部件。通过公共附图标记表示图1所示,这里省略其描述。\n\n【0100】\n\n在线锯装置40中,在通过切割流体施加装置5施加切割流体到线锯4之后,线锯4接触模制体1并进行切割。切割流体施加装置5包括用于保持切割流体6的容器5a和用于回收从容器5a溢出的切削液的面包5b。切削液6保持在容器5a的上部开口上,并且施加到在设置在容器5a的侧表面上的狭缝中行进的线锯4。\n\n【0101】\n\n这里,饱和烃溶剂(通常是异戊烷和正常的石蜡)用作烧结磁体中作为碳的切削液。饱和烃溶剂的平均分子量优选在120至500的范围内。难以使组合的力能够有效地聚集,平均分子量为120。此外,平均分子量超过500增加了烧结体中剩余的碳的量,并且由于磁特性降低,因此不是优选的。更优选地,平均分子量在140至450的范围内。\n\n【0102】\n\n对于饱和烃基溶剂,还可以鉴定沸点优选材料,优选在80℃至250℃的范围内。沸点小于80℃的沸点是薄弱的,并且难以有效地聚集垃圾,并且沸点大于250℃,烧结体中残留的碳量增加并降低磁性属性。它不是优选的,因为它已经完成。另外,由于沸点小于80℃,因此由于挥发性高,因此从易于污染工作环境的观点来看,它不是优选的。作为饱和烃基溶剂,平均分子量在140至450或沸点的范围内更优选在100℃至230℃的范围内。可以排出。特别是,异戊烷很容易\n\n优选地,因为除去烧结体中残留的碳含量。在下面所示的实施例中,(闪点:49℃,粘度:1.2毫米2/秒,分子量:140-150,沸点:使用166℃的异戊烷(第一温度)。\n\n【0103】\n\n此外,为了防止在切割之后更有效地焊接成型体,可以使用其中消除粉末分散在切割液中的分散液体。在这里,凋粉粉是2O.3使用粉末(yttria粉末)。当然,湿润的粉末是y2O.3不限于粉末,al2O.3可以使用粉末和诸如C等薄片。适当地设定分散在切割溶液中的焊接粉末的量,但是例如设定为例如10g / L或更高,500g / L或更低的范围。\n\n【0104】\n\n为了将抗焊粉末分散在切割溶液中,并将分散体供应到线锯4中,优选搅拌分散体,使得防焊粉末不会停留在图1的容器5a中。与切削液一起附接到线锯4的切削液的抗焊粉末可以附接到在切割过程中形成的切割表面,并且可以更有效地防止模制的身体焊接到随后的烧结步骤中。。\n\n【0105】\n\n将使用图1所示的线锯装置40描述通过使用切割液来改善可放电能力的效果。比较了仅使用异戊烷作为切割溶液的实例,其中炔锥叶片分散在异烷烃(yTTRIA浓度:200g / L)中的实例和常规切割的实例。\n\n【0106】\n\n作为模塑主体1,使用具有不同曲率的不同曲率的拱形成型体,如图2所示。使用12。例如,用于形成模制体1的磁体粉末与第一实施例的实施例相同。成型密度为4.2克/厘米3这是。\n\n【0107】\n\n将上述模制体1(垂直达到)切割,以便在包括安装驱动装置2的状态下在包括垂直方向的平面中形成切割表面。使用电沉积晶丝锯(外径0.257mm,磨料粒径40至60μm),在送丝速率为230m / s的条件下切割锯条4,送送速度为230m / s的条件,换速度为150mm / min。\n\n【0108】\n\n此后,用后切割状态进行烧结过程,而不特别地执行分离切割形成的体的过程。评估焊接发生率的结果和所得烧结体(切割形成)的裂缝发生率的结果如表3所示。样品的数量分别为约150个。\n\n【0109】\n\n烧结步骤例如在惰性气体(惰性气体或氮气)气氛下,或在约1000℃的温度下真空进行约1至5小时。如果需要,所得烧结体可以在约450℃至约800℃的温度下老化约1至8小时。另外,为了减少烧结体中含有的碳量并在烧结过程中提高磁性特性,必要时,在润滑剂和切割过程中使用的切削液加入合金粉末。可以除去。加热除去步骤也例如在约100℃至600℃的温度下进行,例如,在约100℃至600℃的温度下进行。例如,约3小时到大约6个小时。在这里,在500℃下为2小时。\n\n【0110】\n\n[表3]\n\n\n\n【0111】\n\n从表3的结果可以看出,与正常切割相比,焊接比大大减少,而不通过切割切割流体使用切割流体。如上所述,可以看出,通过施加切割流体可以改善制造产率。另外,认为,通过施加切割液体的裂缝发生率,认为模制体的强度不会降低,因此不识别出大差异。\n\n【0112】\n\n此外,如表3所示,通过使用切削液,与正常切割相比,切割负荷增加。这被认为是因为通过使用施加切割液体的线锯4,切割废物凝聚并粘附到线锯4的表面上,并且被拖动到线锯4并从切割部分排出。\n\n【0113】\n\n尽管通过使用切削液增加了切割负荷,但切割负荷的尺寸约为30gF,并且是非常小的负载。因此,通过支撑架接触小的部分的变型,与支撑架接触的区域很小,并且即使是高产率,也可能发生变形或碎裂,即使是模制体这很容易变形或削减。可以做。如上所述,由于可以用高产率切割靠近最终烧结磁体的形状的模制体,因此可以缩短工艺后的时间或者可以缩短步进过程的时间。\n\n【0114】\n\n此外,为了在切割时减小施加到模制体的负载(摩擦阻力),图2中所示的线锯装置50包括:可以使用图13所示的线锯装置50。\n\n【0115】\n\n在线锯装置50中,模制体1基本上是水平的(图13中的白色箭头表示,图13中的白色箭头表示在图13中的白色箭头)相对于沿基本垂直方向行进的线锯4(由图1中的白色箭头表示) 。13),并且包括垂直方向的表面可以断开以形成切割表面。因此,由于行驶线锯4和模制体4的面积(切割部分的长度)短于图1的电线锯装置40时的面积短。使用12,它可以从负载降低成型体1,获得更平滑的切割表面。\n\n【0116】\n\n在行进方向4和模制体1中的线锯的相对移动方向不限于图1和2中所示的示例。如图12和13所示,可以根据模制体1的形状或类似物适当地设定。如上所述,通过在切割部分的长度缩短的方向上,优选平滑切割表面,因为获得了平滑的切割表面。\n\n【0117】\n\n此外,线锯装置50在壳体9中具有线锯的驱动部分和湿式集尘器7。如上所述,通过将线锯的驱动单元布置在设置切割过程的位置的下部,可以确保切割的空间和伴随的过程(例如,模制体1的传送)充分地。另外,通过使用湿式集尘器将切割废物收集到回收液8中,可以防止工作环境的污染,如图2所示。壳体9的内部优选地被氮气取代。\n\n【0118】\n\n在第三实施例中,示出了通过浸没方法将切削液施加到线锯4的方法,但可以使用滴滴方法或喷射方法,并且可以使用这些方法。此外,模制体可以保持在切削液中,并且可以在切割流体中进行切割。然而,由于存在诸如切削液的处理的问题,因此优选使用浸渍方法,滴滴方法或喷涂方法,从而可以用少量切削液获得足够的效果。另外,由于通过浸入方法将切削液施加到电线锯的配置,因此通过结构或装置相对容易地实现滴加方法或喷涂方法,例如,也可以施加到线锯上可以完成第二实施例的装置20(图10)。\n\n【0119】\n\n在上述实施方案中适用于上述实施方案的R-Fe-B基稀土磁体粉末是通过以下步骤制备的。\n\n【0120】\n\n首先,采用已知的带钢铸造方法生产R-Fe-B基稀土磁铁合金的铸造。具体而言,首先,通过高频溶解熔化所需组合物的合金以形成合金熔融金属。在将合金熔融金属保持在1350℃后,可以通过单辊方法淬灭合金熔融金属,并且可以获得厚度为约0.3mm的片状合金锭。此时的淬火条件例如是约1m / s的辊圆速,冷却速率为500℃/秒,以及200℃的过磁轴。\n\n【0121】\n\n由此形成的快速冷却合金的厚度在0.03mm或更大和10mm或更小的范围内。该合金是短轴方向尺寸为0.1μm以上且100μm或更小,并且长轴方向尺寸为5μm以上且500μm或更小。2T.14B晶粒和r2T.14B含有分散在晶粒晶粒晶界中的R富型相,R-富相的厚度为10μm或更小。通过条带铸造方法生产原料合金的方法公开了例如美国专利No.5,522,517中。美国专利号5,383,978。\n\n【0122】\n\n接下来,粗糙地挤压的原料合金填充有多个进料包并安装在齿条上。此后,使用上述原料转移装置,安装原料包的齿条被输送到氢炉的前部并插入氢气炉的内部。然后,在氢反应器中开始氢研磨处理。原料合金在氢气炉中加热并进行氢气破碎。研磨后,优选在原料合金的温度降低至常常温后取出原料。然而,即使在高温状态(例如,40至80℃)的同时除去原料,原料不接触大气,发生特别严重的氧化。通过氢研磨,稀土合金大致被压碎成约0.1至1.0mm的大小。合金优选在氢研磨过程之前在1至10mm的平均粒径的薄片中粗粉碎。\n\n【0123】\n\n在磨削之后,优选通过诸如旋转冷却器的冷却装置更精细地压碎脆性原料合金。当用相对较高的温度状态取出原料时,通过转子冷却或类似物的冷却处理可能相对长。\n\n【0124】\n\n使用磨削装置诸如喷射磨机的研磨方法,例如通过转子冷却器等冷却到约室温的原料粉末的喷射磨机进行,制造原料的细粉。在上述实施方案中,使用喷射磨机的氮气气氛中平均粒径(FSSS粒度)的磁体粉末在氮气气氛中为3.0至3.2μm。该氮气气氛中的氧气量优选降低至约10000ppm。在日本专利公开No.6-6728中描述了这种喷射厂。在粉碎时,优选控制大气气体中包含的氧化气体(氧气和水蒸气)的浓度,从而在微量研磨至6000ppm或更低的情况下调节磁体粉末的氧含量(重量),更优选地,调整到3000 ppm或更少。如果磁体粉末中的氧气量超过6000ppm,则磁体中的非磁性氧化物的比例增加,并且最终烧结磁体的磁特性降低。\n\n【0125】\n\n接下来,对于该磁体粉末,在锁定混合器中加入润滑剂,混合,例如0.3质量%,磁体粉末颗粒的表面涂有润滑剂。作为润滑剂,可以使用通过用石油溶剂稀释脂肪酸酯而获得的那些。在上述实施方案中,甲基丙烯酸甲酯用作脂肪酸酯,并且异丙烷烃用作基于石油的溶剂。甲基己酸对异戊烷的重量比例如是1:9。这种液体润滑剂覆盖磁体粉末颗粒的表面,表现出颗粒的抗氧化效果,并在压制时施加均匀的模塑主体密度的功能,并抑制取向的干扰。\n\n【0126】\n\n润滑剂的类型不限于上述。作为脂肪酸酯,除甲基己酸之外,例如,可以使用甲基纤维素,月桂酸甲酯,月桂酸甲酯等。作为溶剂,可以使用由异戊烷烃,环烷溶剂等表示的石油溶剂。润滑剂添加的定时是任意的,并且可以在研磨和粉碎过程中碾磨。或者,可以使用固体(干燥)润滑剂,例如锌硬脂酸锌代替液体润滑剂或用液体润滑剂。\n\n【0127】\n\n磁体粉末在垂直或平行于压缩方向上施加0.5mA / m或更多和1.5mA / m的状态下的已知压榨装置形成。\n\n【0128】\n\n如上所述,尽管已经相对于易于氧化的R-Fe-B基烧结磁体描述了本发明,但已经描述了本发明,但是也可以应用稀土烧结磁铁其他材料和其他烧结磁铁。有可能。\n\n【0129】\n\n此外,尽管已经证明了模制体切断的示例,但是也可以通过通过NC控制通过NC控制将模制体两维或三维切割到电线锯来使用它来用于模制体的外形处理。可以。结果,模制体可以切割成任意形状,例如弧形形状或MABO形状。\n\n【0130】\n\n【发明效果】\n\n根据本发明,由于在用细线锯处理烧结之前的相对柔软的状态模制体,因此可以减小处理负荷并且可以抑制模制体的发热。因此,即使当使用易于氧化的磁铁粉末制造磁铁时,也可以显着缩短处理的时间,而不会降低最终磁体特性,并且可以大大降低制造成本。另外,由于与传统的旋转叶片相比,可以降低切割成本,因此提高了材料的产率。\n\n[简要描述;简介]\n\n【图1】示出了适用于本发明的线锯装置的配置示例的示例。\n\n【图2】图3是解释关于切割传统烧结体的壳体的制造过程的数量的差异以及根据本发明在烧结之前切割成型体的情况的差异。\n\n图3.图3是示意性地示出了本发明的示例中使用的线锯的结构的立体图。\n\n图4.图3是表示将液体润滑剂加入磁体粉末的壳体依赖性的形成密度依赖性的曲线图。\n\n图5.图3是表示添加润滑剂时处理负荷的送料速率依赖性的曲线图。\n\n6.图3是表示添加润滑剂时处理负荷的切割速率依赖性的曲线图。\n\n图7.(a)是表示切割表面烧结后表面精度(波动)和模制密度之间的关系的图,(b)是切割表面的波纹。图3是表示测量范围的透视图(约32毫米),(c)是表示波动的测量数据(步骤数据)的图形。\n\n图8.图5是用于说明在本发明中的锯切锯中切割成型体的情况下的优选烧结方法的图。\n\n图9图3是示意性地示出了模制体处理装置的结构,该模制的体处理装置设置有用于本发明的金属锯装置。\n\n图10.图3是示意性地示出了适用于本发明的另一种线锯装置的结构的图。\n\n11.它是一种分解的透视图,其通常示出了在线锯装置中设置的模制体保持装置的结构。\n\n12.图3是示意性地示出了本发明的实施方式3的线锯装置40的结构的图。\n\n图13.图3是示意性地示出了本发明的实施方式3的另一丝锯装置50的结构。\n\n[标志的说明]\n\n1:模压体(绿色)\n\n2:驱动装置\n\n3A,3B,3C,3D:滚动\n\n4:线条\n\n5:切割流体施用装置\n\n6:切割液体');
INSERT INTO `os_patent_instruction_text` VALUES (12940, 22769, '【0001】\n\n【発明の属する技術分野】\n\n本発明は、希土類磁石の着磁方法に関し、特に、回転機のロータに固定して用いられる希土類磁石の着磁に好適な着磁方法に関する。\n\n【0002】\n\n【従来の技術】\n\n現在、希土類磁石として、希土類·コバルト系磁石と希土類·鉄·ボロン系磁石の二種類が各分野で広く用いられている。\n\n【0003】\n\nなかでも希土類·鉄·ボロン系磁石(以下、「R-T-(M)-B系磁石」と称する。RはYを含む希土類元素、TはFeまたはFeとCoおよび/またはNiとの混合物、Mは添加元素(例えば、Al、Ti、Cu、V、Cr、Ni、Ga、Zr、Nb、Mo、In、Sn、Hf、Ta、Wの少なくとも1種)、Bはボロンまたはボロンと炭素との混合物である。)は、種々の磁石の中で最も高い最大磁気エネルギー積を示し、価格も比較的安いため、各種電子機器へ積極的に採用されている。\n\n【0004】\n\n例えば、高いエネルギー効率を得るため、あるいは、小型軽量化のためなどの目的で、種々の回転機(モータなど)に希土類磁石が用いられている。例えば、特開2000-41372号公報には、図5に示すような可動磁石型直流トルクモータ10が開示されている。\n\n【0005】\n\nこの直流トルクモータ10は、軸3を中心にした円柱状の鉄心(例えば軟鉄)4の周囲に永久磁石5および6が円筒状に固着されたロータ1と、略コ字形状であって、その端部にはそれぞれロータ1と所定の空隙を保って対向する第1磁極部7、第2磁極部8が形成され、基部(図中上方)にはコイル9が巻き付けられた、ステータ2とを有している。ここで、ステータ2は、例えば、飽和磁束密度1.6T(テスラ)以上の電磁鋼帯を重ね合わせたものである。\n\n【0006】\n\n上記公報に開示されている永久磁石5および6はそれぞれ半円筒形(弓形)の永久磁石であって、互いに逆方向に磁化されている。例えば、磁石5は、表面(外周面)側がN極で、裏面(内面)側がS極とされ、一方、磁石6は、表面(外周面)側がS極で、裏面(内面)側がN極とされている。磁石5および6に代えて、一体に成形された円筒状の磁石(不図示)を用いることもできる。\n\n【0007】\n\n【発明が解決しようとする課題】\n\n上述のモータ10のロータに用いられる磁石5および6を円筒状に配置された状態で着磁したり、あるいは、一体に形成された円筒状の磁石を着磁する際に、従来のように、径方向に一回の磁界印加で着磁すると、互いに逆方向に磁化される領域(図5の磁石5および磁石6に相当)の境界部分が十分に着磁されないという問題があることが分かった。このような不完全に着磁された磁石では、平均磁束密度が低下したり、所望の表面磁束密度が得られる角度範囲が狭くなったりする。さらに、表面磁束密度の角度分布(軸周り)において境界部分の付近に極値が生じ、表面磁束密度の変化のリニアリティが低下する結果、回転機の角度を精度良く調整することが困難であったり、回転機の性能が十分に発揮されないことがある。\n\n【0008】\n\n本発明は、上記諸点に鑑みてなされたものであり、その目的の1つは、互いに逆方向磁化された領域を形成するように円筒状に配置された磁石を着磁する際に、領域付近を従来よりも確実に所定の方向に着磁させる着磁方法を提供することにある。また、そのような着磁方法で着磁された磁石およびそれを用いた高性能な回転機、特に、角度調整を精度良く行える回転機を提供することを他の目的とする。\n\n【0009】\n\n【課題を解決するための手段】\n\n本発明による希土類磁石の着磁方法は、円筒を形成するように配置された希土類磁石を用意する工程と、前記希土類磁石に第1外部磁界を印加することによって、前記円筒の内側から外側に向かって磁化されている第1領域と外側から内側に向かって磁化されている第2領域とを形成する第1着磁工程と、前記第1領域と前記第2領域との境界に、前記第1着磁工程で印加されていた外部磁界成分の方向と0°超50°未満の角度をなす方向の外部磁界成分が印加されるように第2外部磁界を印加する第2着磁工程とを包含し、そのことによって上記目的が達成される。\n\n【0010】\n\n好ましい実施形態では、前記希土類磁石は、前記円筒の軸を中心に磁気回路に対して相対的に回転可能なように支持され、前記磁気回路に対する相対位置が第1の位置で前記第1着磁工程が実行され、前記希土類磁石を前記軸を中心に前記磁気回路に対して前記相対的に回転させた後、前記第2着磁工程が実行される。\n\n【0011】\n\n好ましい実施形態では、前記円筒の円周にそって、前記第1領域と前記第2領域とを1つずつ有する2極磁石が形成される。\n\n【0012】\n\n前記第1領域と前記第2領域との境界に、前記第1着磁工程で印加される外部磁界成分の方向と前記第2着磁工程で印加される外部磁界成分の方向とが成す角は、20°以上40°以下であることが好ましく、25°以上35°以下であることが更に好ましい。\n\n【0013】\n\n前記第1外部磁界と前記第2外部磁界の強度は実質的に互いに等しいことが好ましい。例えば、第1外部磁界と第2外部磁界とを同じ磁気回路を用いて同じ条件で生成し、希土類磁石の磁気回路に対する相対位置(軸の周りの角度)だけを変えることが好ましい。磁気回路としては公知の種々の磁気回路を用いることができる。\n\n【0014】\n\n前記希土類磁石は、ラジアル配向異方性焼結磁石であることが好ましい。\n\n【0015】\n\n本発明による希土類磁石は、上記いずれかの着磁方法を用いて着磁されているので、優れた磁気特性を有する。\n\n【0016】\n\n本発明による希土類磁石は、円筒状の希土類磁石であって、円筒の内側から外側に向かって磁化されている第1領域と、外側から内側に向かって磁化されている第2領域とを有し、前記第1領域と前記第2領域との境界において、表面磁束密度が極値をとらず連続的に変化する。\n\n【0017】\n\n好ましい実施形態において、前記第1領域または前記第2領域において、表面磁束密度が最大値をとる角度範囲が120°以上140°以下である。\n\n【0018】\n\n好ましい実施形態において、表面磁束密度が零の点から最大値をとるまでの角度範囲が、20°以上30°以下である。\n\n【0019】\n\n本発明による回転機は、上記の製造方法で製造された希土類磁石を備えているので、優れた特性を有しており、バルブ開度制御装置などに好適に用いられる。\n\n【0020】\n\n【発明の実施の形態】\n\n以下、図面を参照しながら、本発明による希土類磁石の着磁方法の実施形態を説明するが、本発明は以下の実施形態に限られない。\n\n【0021】\n\n本発明による希土類磁石の着磁方法は、図1(a)および(b)に示すように、少なくとも2回の着磁工程を含んでいる。\n\n【0022】\n\nまず、円筒22aを形成するように配置された希土類磁石(簡単さのために着磁前のものも磁石と称する)22を用意する。希土類磁石22は、一体に形成された希土類磁石であっても良いし、また、複数の弓形磁石を円柱状のロータの表面に固定したものでもよい(工程(a))。\n\n【0023】\n\n次に、希土類磁石22に第1外部磁界H1を印加することによって、円筒22aの内側から外側に向かって磁化されている第1領域R1と外側から内側に向かって磁化されている第2領域R2とを形成する(工程(b))。このとき、希土類磁石22の第1領域R1と第2領域R2との境界部分BRの磁化方向は、安定しない。特に、ラジアル配向の異方性希土類焼結磁石では、結晶粒がラジアル方向に配向しているので、境界部分BRの結晶粒はその配向方向に直交する方向(すなわち、円筒22aに対する接線方向)の着磁磁界を受けることになり、良好に着磁されない。従来は、この着磁工程だけが実行されていた。\n\n【0024】\n\n本発明の着磁方法では、さらに、第1領域R1と第2領域との境界部分BRに、第1着磁工程で印加されていた外部磁界成分の方向(ここではH1で代表)と0°超50°未満の角度をなす方向の外部磁界成分(ここではH2で代表)が印加されるように第2外部磁界H2を印加する(工程(c))。この第2外部磁界H2によって境界部分BRの結晶粒の磁化方向が定まる。第1外部磁界H1と第2外部磁界H2の強度は実質的に等しいことが\n\n好ましい。なお、この第1着磁工程および/または第2着磁工程は複数回実行してもよい。外部磁界H1およびH2の強度は、用いる希土類磁石に応じて適宜設定されるが、ラジアル配向R-T-(M)-B系磁石の場合は、2T〜4Tに設定される。\n\n【0025】\n\nなお、図1(a)および(b)では、簡単のために、希土類磁石22の全体に同じ方向の外部磁界H1またはH2が印加されている様子を示したが、必ずしもその必要はない。例えば、境界部分BRと各領域R1およびR2との中心付近とでは違う向きの外部磁界成分が印加されても良い。\n\n【0026】\n\n以下では、磁気特性に優れ、表面磁束密度(最大値)の平坦性に優れるラジアル配向したR-T-(M)-B系異方性焼結磁石を用いた例を説明する。ここで用いたラジアルリング磁石(図2の参照符号112)は、例えば以下のようにして作製される。\n\n【0027】\n\nまず、ストリップキャスト法(米国特許5、383、987号の明細書参照)などの急冷法(冷却速度102〜104℃/sec)によって希土類合金粉末を作製する。この粉末をキャビティ内の磁界強度が0.4MA/m以上の配向磁界下でプレス成形し、密度3.5g/cm3以上の成形体を作製する。得られた成形体を焼結(Ar雰囲気下1000℃〜1100℃、2〜5時間)し、さらに時効処理(400℃〜600℃、3〜7時間)を施すことによってラジアルリング磁石を作製する。このラジアルリング磁石の形状は、例えば、外径29mmφ、内径25mmφ、高さ12mmである。なお、ラジアルリング磁石は公知の方法で製造されるので、ここではその製造方法の詳細な説明は省略する(例えば、特開2001-192705号公報参照)。なお、ラジアルリング磁石は、複数の弓形磁石(成形体)をリング状(円筒状)に接着することによって形成しても良い。勿論,この場合においても、最終的に得られるラジアルリング磁石における磁粉の配向がラジアル配向となるように設定され、焼結磁石はリングの中心から半径方向に磁気異方性を有する。\n\n【0028】\n\n本実施形態では、図2に示す着磁装置100を用いて着磁を行った。\n\n【0029】\n\n着磁装置100は、軸103に固定された円柱状のロータ110と、ロータ110に対して外部磁界を発生する磁気回路120(120aおよび120b)とを有している。軸103は、支持台130によって回転可能なように支持されている。後述するように、着磁されるラジアルリング磁石112と磁気回路120との相対位置を軸103を中心に所定の回転度(θ)で変更するために、例えば、所定の角度で設けた溝をクランプした回転機構132を設けても良い。このように段階的に所定の角度ずつ回転する機構を設けることによって、回転角θの制御を容易に且つ再現性よく実行することができる。\n\n【0030】\n\n磁気回路120は、ヨーク122(122aおよび122b)を有し、ヨーク122にはコンデンサ電源(不図示)に接続されているコイル124(124aおよび124b)が巻かれている。円柱状のロータ110の外周に円筒状のラジアルリング磁石112が配置されている。磁気回路120aおよび120bは、ラジアルリング磁石112に対して、所定の方向の外部磁界(例えば、図1にH1およびH2)を発生する。なお、磁気回路120として、空芯コイルなど他の公知の磁気回路を用いてもよい。また、磁気回路の磁極の形状を適宜変更することによって、4極以上のラジアルリング磁石を着磁することも出来る。\n\n【0031】\n\nまず、ラジアルリング磁石112が軸103に対して第1の位置にある状態で、磁気回路120aおよび120bから所定の外部磁界(約3T)を印加した。第1の位置は任意の位置であってよい。\n\n【0032】\n\nこの第1着磁工程だけを実行することによって得られたラジアルリング磁石112の表面磁束密度Bg(T:テスラ)の角度依存性をホール素子プローブを備えたガウスメータを用いて測定した結果を図3(a)に示す。なお、測定角度は、得られたラジアルリング磁石112のN極領域(外周に向かって磁化されている領域R1)とS極領域(内周に向かって磁化されている領域R2)の境界線(N領域の中心S領域の中心とを結ぶ線に直交する線と等価)と、ラジアルリング磁石112の中心軸とを通る方向を0°とした。\n\n【0033】\n\n次に、第1着磁工程を実行した後で、第1の位置に対して、軸103の周り一定の角度θだけラジアルリング磁石112を回転させた第2の位置で、第1着磁工程と同じ外部磁界を印加した。回転角θを20°および40°としたときに得られたラジアルリング磁石112の表面磁束密度Bgの角度依存性を図3(b)に示す(20°と40°とでは同じ結果となった)。また、回転角θを30°としたときに得られたラジアルリング磁石112の表面磁束密度Bgの角度依存性を図3(c)に示した。\n\n【0034】\n\n図3(a)〜(c)に示したように、ラジアルリング磁石の円周に沿った表面磁束密度Bgは、第1領域R1と第2領域R2との境界部分BR(図1参照)において、その値が零を取り、その後、第1領域R1および第2領域R2のそれぞれにおいて、その値(絶対値)が増大し最大値を取った後、平坦領域を経て、境界部分BRにおいて再び零となる。なお、厳密にいうと、第1領域R1および第2領域R2のそれぞれにおける最大値は極大値であり、平坦領域における表面磁束密度Bgの値は最大値(極大値)よりも僅かに小さい値となる。ここでは、第1領域R1および第2領域R2のそれぞれにおける2つの極大値間の平坦領域を表面磁束密度Bが最大値を取る「最大値領域」と称することにする。\n\n【0035】\n\nまず、図3(a)のグラフから明らかなように、一回だけの着磁工程では、第1領域R1と第2領域R2との境界部分BR(図1参照)が十分に着磁されていないので、表面磁束密度Bgが最大値をとる最大値領域の角度範囲(50°〜150°および220°〜330°)が狭く、また、平均磁束密度も低い。さらに、境界部分BR付近では表面磁束密度Bgが連続的に変化せず、極値(極大値および極小値)を取っている。また、境界部分BR付近では、表面磁束密度Bgが零の点から最大値を取るまでの角度範囲が30°を超えている。\n\n【0036】\n\nこのように、第1着磁工程でだけで着磁すると、表面磁束密度Bgの最大値領域の角度範囲は、第1領域R1および第2領域R2のそれぞれにおいて、120°未満と比較的狭く、且つ、第1領域R1と第2領域R2との境界部分BRにおける表面磁束密度Bgの変化に極値が現れるので、このような特性を有するラジアルリング磁石122を用いて、例えば回転機を構成すると、エネルギー効率が低いばかりでなく、大きな振動を発生する。さらに、このようなラジアルリング磁石を用いて精密な位置(角度)センサを作ることは困難である。\n\n【0037】\n\nこれに対し、本発明の着磁方法を用いて得られたラジアルリング磁石の特性は、図3(b)および(c)に示したように、図3(a)に比べて、表面磁束密度Bgが最大値をとる角度範囲が広く、平均磁束密度も高くなっていることが分かる。最大領域の角度範囲は、図3(b)に示した例では、30°〜150°および210°〜330°であり、図3(c)に示した例では、20°〜150°および195°〜330°である。\n\n【0038】\n\nまた、第1領域R1と第2領域R2との境界部分BR付近においては、表面磁束密度が単調に増加または減少しており、図3(a)で見られた極値(極大値または極小値)は存在しない。特に、図3(c)に示した回転角θを30°とした場合のラジアルリング磁石112は、最大値をとる角度範囲が広く、平均磁束密度も高い。さらに、第1領域R1と第2領域R2との境界部分BR付近での表面磁束密度Bgの変化も非常に滑らかであること\n\nが分かる。\n\n【0039】\n\nこのように、第1着磁工程と第2着磁工程とを実行することによって、表面磁束密度Bgの最大値領域の角度範囲が120°以上140°以下で、表面磁束密度Bgが零の点から最大値を取るまでの角度範囲が20°以上30°以下のラジアルリング磁石を得ることができる。また、このラジアルリング磁石の表面磁束密度Bgは、第1領域R1と第2領域R2との境界部分BR付近において極値を取ることなく単調に増加または減少し、表面磁束密度Bgの変化のリニアリティが高い。\n\n【0040】\n\n図4に、回転角θを変えて得られた種々のラジアルリング磁石112の表面磁束密度Bgが最大値をとる角度範囲と、表面磁束密度が最大値の半分以上の値をとる角度範囲とをそれぞれ360度で除した値を回転角θに対しプロットした結果を示す。なお、回転角θ=0°は、第1着磁工程のみを実行した場合を示し、回転角θを50°としたときには、θ=0°の場合とほぼ同じ結果が得られた。\n\n【0041】\n\n図4のグラフから明らかなように、本発明による着磁方法を採用し、回転角θを0°超50°未満とすることによって、表面磁束密度Bgが最大値をとる角度範囲および最大値の半分の値をとる角度範囲が、従来の着磁方法(図4中の回転角θ=0°に相当)に比べ増加していることが分かる。さらに、回転角θが20°以上40°以下の範囲とすることによって、図3(b)に示したように、第1領域R1と第2領域R2との境界部分BRにおける表面磁束密度Bgの変化に極値が現れず、連続的にスムーズに変化する。更に、回転角θを30°±5°以内とすることによって、境界部分BRにおける表面磁束密度Bgの変化がさらにスムーズとなる。回転角θが約30°のときに、図3(c)に示したように、表面磁束密度Bが最もスムーズに変化する。\n\n【0042】\n\nこのように、本発明による着磁方法を用いると、互いに反対方向に磁化された領域(第1領域R1と第2領域R2)の境界部分BRが従来よりも確実に着磁されたラジアルリング磁石が得られる。このようなラジアルリング磁石を用いて、図5に示したような回転機を構成すると、エネルギー効率が高く、振動の発生が少ない回転機が得られる。このような回転機は、例えば、特開2000-41372号公報に開示されているような、スロットルバルブの制御装置などの角度を高い精度で制御することが要求される用途に好適に用いられる。\n\n【0043】\n\n【発明の効果】\n\n本発明によると、互いに逆方向磁化された領域を形成するように円筒状に配置された磁石を着磁する際に、領域の境界付近を従来よりも確実に所定の方向に着磁させる着磁方法が提供される。また、そのような着磁方法で着磁された磁石を用いることによって、高性能な回転機が提供される。本発明による希土類磁石を用いると、モータやアクチュエータ等のトルクリップルが低減され、且つ、エネルギー効率も向上する。\n\n【0044】\n\n特に、ラジアル配向したR-T-(M)-B系焼結磁石を本発明の着磁方法を用いて着磁することによって得られる磁石は、高性能な回転機や高精度の位置(角度)検出用のセンサに好適に用いられる。勿論、本発明には、希土類焼結磁石に限られず、ボンド磁石をはじめ種々の希土類磁石の着磁にも用いられる。\n\n【図面の簡単な説明】\n\n【図1】(a)および(b)は、本発明による希土類磁石の着磁方法を模式的に示す図であり、(a)に示した第1着磁工程の後で、(b)に示した第2着磁工程が実行される。\n\n【図2】本発明の実施形態による着磁方法を実行するために用いられる着磁装置100を模式的に示す図である。\n\n【図3】(a)から(c)は、ラジアルリング磁石の表面磁束密度Bgの角度依存性をし\n\nめすグラフであり、(a)は従来の着磁方法によるものを示し、(b)および(c)は本発明によるものをそれぞれ示す。\n\n【図4】回転角θによるラジアルリング磁石の磁気特性の違いを説明するためのグラフである。\n\n【図5】本発明による希土類磁石が好適に用いられる公知の回転機を示す図である。\n\n【符号の説明】\n\n22  希土類磁石\n\n22a  円筒\n\n100  着磁装置\n\n103  軸\n\n110  ロータ\n\n112  ラジアルリング磁石\n\n120、120a、120b  磁気回路\n\n122、122a、122b  ヨーク\n\n124a、124b  コイル\n\n130  支持台\n\n132  回転機構\n\nH1、H2  外部磁界', '[0001]\n\n 发明领域\n\n 稀土磁体的磁化方法技术领域本发明涉及稀土磁体的磁化方法，尤其涉及适于通过固定在旋转机械的转子上而使用的稀土磁体的磁化的方法。\n\n   [0002]\n\n [现有技术]\n\n 目前，稀土钴磁体和稀土铁硼磁体这两种稀土磁体广泛应用于各个领域。\n\n   [0003]\n\n 其中，稀土-铁-硼磁体（以下称为“ RT-（M）-B磁体”。R是含有Y的稀土元素，T是Fe或Fe和Co和/或Ni，M的混合物 是添加元素（例如，Al，Ti，Cu，V，Cr，Ni，Ga，Zr，Nb，Mo，In，Sn，Hf，Ta，W中的至少一种），B是硼或硼和碳。 是一种混合物。）在各种磁体中具有最高的最大磁能积，并且其价格相对较低，因此它积极地用于各种电子设备中。\n\n   [0004]\n\n 例如，出于获得高能量效率或用于小型化和轻量化的目的，稀土磁体用于各种旋转机器（电动机等）中。 例如，日本特开2000-41372号公报公开了如图1所示的可动磁铁型DC转矩电动机10。\n\n   [0005]\n\n DC转矩电动机10具有转子1，该转子1在以轴3为中心的圆筒状的铁心（例如软铁）4的周围固定有呈圆筒状的永磁铁5、6，呈大致U字状。 在端部分别形成有以预定的间隙面对转子1的第一磁极部7和第二磁极部8，在定子2的基部（图中的上侧）上卷绕有线圈9的定子2。 有 在此，定子2例如是饱和磁通密度为1.6T（特斯拉）以上的电磁钢带的层叠体。\n\n   [0006]\n\n 在上述出版物中公开的永磁体5和6是半圆柱形（弓形）永磁体，并且沿相反的方向磁化。 例如，磁体5在前表面（外周表面）侧具有N极，在背面（内表面）侧具有S极，而磁体6在前表面（外周表面）侧具有S极，而在背表面（内表面）侧具有N极。 已经完成了。 代替磁体5和6，可以使用整体模制的圆柱形磁体（未示出）。\n\n   [0007]\n\n [本发明要解决的问题]\n\n 如上所述，在电动机10的转子中使用的磁体5和6以圆筒状排列的状态被磁化，或者如常规情况那样，当磁化一体形成的圆柱形磁体时， 发现当在施加单个磁场的情况下沿径向磁化时，沿相反方向磁化的区域（对应于图5中的磁体5和磁体6）之间的边界没有被充分磁化。  。 在这种不完全磁化的磁体中，平均磁通密度降低并且获得期望的表面磁通密度的角度范围变窄。 此外，在表面磁通密度的角度分布（围绕轴线）中，在边界附近产生极值，并且表面磁通密度的变化的线性减小。  ，旋转机械的性能可能无法充分发挥。\n\n   [0008]\n\n 鉴于上述要点而做出本发明，并且本发明的目的之一是使布置成圆柱形的磁体磁化，以在该区域附近形成沿相反方向磁化的区域。 本发明提供一种磁化方法，该磁化方法用于比以前更可靠地沿预定方向磁化磁体。 本发明的另一个目的是提供一种通过这种磁化方法磁化的磁体以及使用该磁体的高性能旋转机，尤其是能够精确地调节角度的旋转机。\n\n   [0009]\n\n [解决问题的手段]\n\n 根据本发明的磁化稀土磁体的方法包括以下步骤：制备布置成形成圆柱体的稀土磁体，并向稀土磁体施加第一外部磁场，以使磁体从圆柱体的内部指向外部。 第一磁化步骤，在第一区域和第二区域之间的边界处形成从第一区域的外侧到内侧磁化的第二区域，该第二区域被第一磁化步骤磁化。 包括施加第二外部磁场的第二磁化步骤，使得沿与在磁化步骤中施加的外部磁场分量的方向形成大于0°且小于50°的角度的方向施加外部磁场分量。 然而，由此实现上述目的。\n\n   [0010]\n\n 在一个优选实施例中，稀土磁体被支撑为可相对于磁路绕圆柱体的轴线旋转，并且在相对于磁路的相对位置被磁化的第一磁极是第一位置。 执行该步骤，并且在使稀土磁体相对于磁路绕轴旋转之后执行第二磁化步骤。\n\n   [0011]\n\n 在一优选实施例中，沿圆柱体的圆周形成具有第一区域和第二区域中的每个区域的两极磁体。\n\n   [0012]\n\n 在第一区域和第二区域之间的边界处，由在第一磁化步骤中施加的外部磁场分量的方向与在第二磁化步骤中施加的外部磁场分量的方向形成的角度为 20°以上且40°以下，更优选25°以上且35°以下。\n\n   [0013]\n\n 优选的是，第一外部磁场和第二外部磁场的强度大致相等。 例如，优选的是在相同条件下使用相同的磁路产生第一外部磁场和第二外部磁场，并且仅改变稀土磁体相对于磁路的相对位置（围绕轴线的角度）。 作为磁路，可以使用各种已知的磁路。\n\n   [0014]\n\n 稀土磁体优选为径向各向异性烧结磁体。\n\n   [0015]\n\n 由于根据本发明的稀土磁体通过上述任何一种磁化方法被磁化，因此其具有优异的磁特性。\n\n   [0016]\n\n 根据本发明的稀土磁体是圆柱形稀土磁体，并且具有从圆柱体的内部磁化到外部的第一区域，以及从外部磁化到内部的第二区域。 在第一区域和第二区域之间的边界处，表面磁通密度连续变化而不取极值。\n\n   [0017]\n\n 在优选的实施方式中，在第一区域或第二区域中，表面磁通密度具有最大值的角度范围为120°以上且140°以下。\n\n   [0018]\n\n 在优选的实施方式中，从表面磁通密度为零的点到最大值的角度范围为20°以上且30°以下。\n\n   [0019]\n\n 由于根据本发明的旋转机包括通过上述制造方法制造的稀土磁体，因此其具有优异的特性并且适合用于阀开度控制装置等。\n\n   [0020]\n\n 具体实施方式\n\n 在下文中，将参照附图描述根据本发明的用于磁化稀土磁体的方法的实施例，但是本发明不限于以下实施例。\n\n   [0021]\n\n 如图1（a）和1（b）所示，根据本发明的用于磁化稀土磁体的方法包括至少两个磁化步骤。\n\n   [0022]\n\n 首先，准备布置成形成圆柱体22a的稀土磁体（磁化之前的磁体也被称为磁体）22。 稀土磁体22可以是一体形成的稀土磁体，或者可以是固定在圆筒形转子的表面上的多个弓形磁体（步骤（a））。\n\n   [0023]\n\n 接下来，通过对稀土磁体22施加第一外部磁场H1，从圆柱体22a的内部向外部磁化的第一区域R1和从外部向内部磁化的第二区域R2。  （步骤（b））。 此时，稀土磁体22在第一区域R1和第二区域R2之间的边界部分BR的磁化方向不稳定。 特别地，在径向取向的各向异性取向稀土烧结磁体中，晶粒沿径向取向，因此边界部分BR的晶粒在与取向方向正交的方向（即，与圆柱体22a的切线方向）上。 它受到磁化磁场，并且磁化不好。 通常，仅执行该磁化步骤。\n\n   [0024]\n\n 此外，在本发明的磁化方法中，在第一区域R1与第二区域之间的边界部分BR中，在第一磁化步骤中施加的外部磁场分量的方向（在此以H1表示）为0°。 施加第二外部磁场H2，使得施加在形成小于50°的角度的方向上的外部磁场分量（在此由H2表示）（步骤（c））。 该第二外部磁场H2确定边界部分BR处的晶粒的磁化方向。 优选的是，第一外部磁场H1和第二外部磁场H2的强度大致相等。 可以多次执行第一磁化步骤和/或第二磁化步骤。 根据所使用的稀土磁体适当地设定外部磁场H1和H2的强度，但是在径向取向R-T-（M）-B系磁体的情况下，将它们设定为2T至4T。\n\n   [0025]\n\n 在图1（a）和1（b）中，为简单起见，将相同方向的外部磁场H1或H2施加到整个稀土磁体22上，但这并不总是必要的。 例如，可以在边界部分BR以及区域R1和R2的中心附近施加不同方向的外部磁场分量。\n\n   [0026]\n\n 在下文中，将描述其中使用具有优异的磁性能和表面磁通密度（最大值）的平坦度的径向R-T-（M）-B各向异性烧结磁体的示例。 例如，此处使用的径向环形磁体（图2中的附图标记112）例如如下制造。\n\n   [0027]\n\n 首先，通过诸如带铸法的淬火方法（冷却速率102至104℃/秒）来生产稀土合金粉末（参见美国专利号5,383,987的说明书）。 将该粉末在型腔中在磁场强度为0.4MA / m以上的取向磁场下进行压制成型，从而制成密度为3.5g / cm3以上的成型体。 通过将所得的成形体（在Ar气氛下1000〜1100℃，2〜5小时）进行烧结并进一步进行时效处理（400〜600℃，3〜7小时），从而制作出径向环状的磁铁。  。 该径向环形磁体的形状例如是外径为29mmφ，内径为25mmφ，高度为12mm。 由于径向环形磁体是通过已知方法制造的，因此在此省略了对制造方法的详细描述（例如，参考日本特开2001-192705号公报）。 径向环形磁体可以通过将多个弓形磁体（成型体）以环形（圆柱形）的形式结合而形成。 当然，同样在这种情况下，将最终获得的径向环形磁体中的磁性颗粒的取向设定为径向取向，并且烧结磁体在从环形中心起的径向方向上具有磁各向异性。\n\n   [0028]\n\n 在本实施方式中，使用图1所示的磁化装置100进行磁化。\n\n   [0029]\n\n 磁化装置100具有：固定在轴103上的圆筒状的转子110；以及相对于转子110产生外部磁场的磁路120（120a，120b）。 轴103由支撑基座130可旋转地支撑。 如后所述，例如，为了使磁化的径向环形磁铁112和磁路120的相对位置以相对于轴103的规定的旋转度（θ）变化，例如形成有以规定的角度设置的槽。 可以提供夹紧的旋转机构132。 通过以这种方式提供用于将旋转角度旋转预定角度的机构，可以容易且可再现地控制旋转角度θ。 \n\n [0030]\n\n 磁路120具有磁轭122（122a和122b），并且连接到电容器电源（未示出）的线圈124（124a和124b）缠绕在磁轭122上。 圆柱形径向环形磁体112布置在圆柱形转子110的外周上。 磁路120a和120b相对于径向环形磁体112沿预定方向（例如，图1中的H1和H2）产生外部磁场。 作为磁路120，可以使用诸如空心线圈之类的另一种已知的磁路。 此外，通过适当地改变磁路的磁极的形状，可以磁化具有四个或更多磁极的径向环形磁体。\n\n   [0031]\n\n 首先，在径向环形磁体112相对于轴103处于第一位置的情况下，从磁路120a和120b施加预定的外部磁场（大约3T）。 第一位置可以是任何位置。\n\n   [0032]\n\n 图3示出了测量径向环形磁体112的表面磁通密度Bg（T：特斯拉）的角度依赖性的结果，该径向环形磁体112通过使用配备有霍尔元件探针的高斯计仅执行该第一磁化步骤而获得。 如图（a）所示。 测量角是所获得的径向环形磁体112的N极区域（朝向外周磁化的区域R1）和S极区域（朝向内周磁化的区域R2）之间的分界线。 穿过N区域的中心和与连接S区域的中心的线正交的线和径向环形磁体112的中心轴的方向为0°。\n\n   [0033]\n\n 接下来，在执行第一磁化步骤之后，在第二位置处执行第一磁化步骤，在该第二位置中，径向环形磁体112绕轴103相对于第一位置旋转恒定角度θ。 施加了相同的外部磁场。 在图3（b）中示出了在将旋转角θ设为20°和40°时得到的径向环形磁铁112的表面磁通密度Bg的角度依赖性（在20°和40°下也得到相同的结果）。  ）。 此外，图3（c）示出了当旋转角θ为30°时获得的径向环形磁体112的表面磁通密度Bg的角度依赖性。\n\n   [0034]\n\n 如图3（a）至（c）所示，沿径向环形磁体的圆周的表面磁通密度Bg位于第一区域R1和第二区域R2之间的边界部分BR（见图1）。  ，其值取零，然后，在第一区域R1和第二区域R2的每一个中，其值（绝对值）增大并取最大值，然后穿过平坦区域并在边界部分BR再次变为零。 成为 严格来说，第一区域R1和第二区域R2中的最大值是最大值，并且平坦区域中的表面磁通密度Bg的值是略小于最大值（最大值）的值。 成为 在此，将第一区域R1和第二区域R2各自的两个最大值之间的平坦区域称为表面磁通密度B为最大值的“最大值区域”。\n\n   [0035]\n\n 首先，从图3（a）的曲线图中可以清楚地看出，第一区域R1和第二区域R2之间的边界部分BR（见图1）在磁化过程中仅被磁化一次。 因此，表面磁通密度Bg具有最大值的最大值区域的角度范围（50°至150°和220°至330°）狭窄，并且平均磁通密度也低。 此外，表面磁通密度Bg在边界部分BR附近不连续变化，并且具有极值（最大值和最小值）。 此外，在边界部分BR附近，从表面磁通密度Bg为零的点到最大值的角度范围超过30°。\n\n   [0036]\n\n 因此，当仅在第一磁化步骤中被磁化时，表面磁通密度Bg的最大值区域的角度范围相对较窄，在第一区域R1和第二区域R2中的每一个小于120°， 此外，由于在第一区域R1和第二区域R2之间的边界部分BR中的表面磁通密度Bg的变化中出现极值，因此，例如，当配置旋转机时，使用具有这种特性的径向环形磁体122。  ，不仅能耗低，而且会产生很大的振动。 此外，使用这种径向环形磁体难以制造精确的位置（角度）传感器。\n\n   [0037]\n\n 另一方面，如图3（b）和（c）所示，使用本发明的磁化方法得到的径向环形磁铁的特性与图3（a）相比，表面磁通密度大。 可以看出，Bg取最大值的角度范围较宽，平均磁通密度也较高。 在图3（b）所示的示例中，最大面积的角度范围为30°至150°和210°至330°，在图3（c）所示的示例中为20°至150°和195°。 它介于°和330°之间。\n\n   [0038]\n\n 此外，在第一区域R1和第二区域R2之间的边界部分BR附近，表面磁通密度单调增加或减少，并且在图3（a）中看到极值（最大值或最小值）。  ）不存在。 特别地，在图3（c）所示的旋转角θ为30°的情况下的径向环形磁铁112中，最大角度范围宽且平均磁通密度高。 此外，可以看出，在第一区域R1和第二区域R2之间的边界部分BR附近的表面磁通密度Bg的变化也非常平滑。\n\n   [0039]\n\n 以这种方式，通过执行第一磁化步骤和第二磁化步骤，表面磁通密度Bg的最大值区域的角度范围为120°以上且140°以下，并且表面磁通密度Bg为零的点。 可以获得角度范围为20°以上且30°以下的径向环形磁体，直到获得最大值。 此外，该径向环形磁体的表面磁通密度Bg在第一区域R1和第二区域R2之间的边界部分BR附近以及表面磁通密度Bg的变化的线性方面不取极值，而单调增加或减少。 高。\n\n   [0040]\n\n 图4示出了角度范围，其中通过改变旋转角度θ而获得的各种径向环形磁体112的表面磁通密度Bg具有最大值，并且其中表面磁通密度具有最大值的一半或更大的值的角度范围。 相对于旋转角度θ绘制除以360度的值的结果如下。 旋转角θ＝ 0°表示仅执行第一磁化步骤的情况，并且当旋转角θ为50°时，获得与在θ＝ 0°的情况下几乎相同的结果。\n\n   [0041]\n\n 从图4的曲线清楚可见，通过采用根据本发明的磁化方法，并且通过将旋转角θ设置为大于0°且小于50°，表面磁通密度Bg具有角度范围的最大值和最大值。 可以看出，与常规磁化方法相比，占据该值一半的角度范围增大了（对应于图4中的旋转角度θ＝ 0°）。 另外，如图3（b）所示，通过将旋转角θ设定在20°以上且40°以下的范围内，第一区域R1与第二区域R2之间的边界部分BR的表面磁通密度Bg为： 极值不会出现在更改中，而是连续且平滑地更改。 此外，通过将旋转角θ设定在30°±5°以内，边界部分BR处的表面磁通密度Bg的变化变得更平滑。 如图3（c）所示，当旋转角θ为约30°时，表面磁通密度B最平滑地变化。\n\n   [0042]\n\n 如上所述，当使用根据本发明的磁化方法时，与常规情况相比，其中沿相反方向磁化的区域（第一区域R1和第二区域R2）的边界部分BR被更可靠地磁化的径向环形磁体。 获得。 当使用这样的径向环形磁体来构成如图5所示的旋转机械时，可获得具有高能量效率和较小振动的旋转机械。 这样的旋转机优选用于需要高精度的角度控制的日本特开2000-41372号公报中公开的节气门控制装置等用途。\n\n   [0043]\n\n [本发明的效果]\n\n 根据本发明，当磁化圆柱形磁体以形成沿彼此相反的方向磁化的区域时，与之前相比，沿预定方向更可靠地磁化了区域之间的边界附近。 提供了一种方法。 此外，通过使用通过这种磁化方法磁化的磁体来提供高性能的旋转机械。 当使用根据本发明的稀土磁体时，减小了电动机，致动器等的转矩脉动并且提高了能量效率。\n\n   [0044] \n\n 特别地，通过使用本发明的磁化方法使径向取向的RT-（M）-B烧结磁体磁化而获得的磁体是高性能的旋转机械或高精度的位置（角度）检测。 它适合用作传感器。 当然，本发明不限于稀土烧结磁体，而是可以用于磁化包括粘结磁体的各种稀土磁体。\n\n [附图简述]\n\n 图1A和图1B是示意性地表示本发明的稀土类磁铁的磁化方法的图。 执行所示的第二磁化步骤。\n\n 图2是示意性示出用于执行根据本发明实施例的磁化方法的磁化装置100的图。\n\n [图3]（a）至（c）是示出径向环形磁体的表面磁通密度Bg的角度依赖性的曲线图，（a）示出常规磁化方法，并且（b）和（  c）示出了根据本发明的各个实施例。\n\n 图4是用于说明径向环形磁体的磁特性随旋转角θ而变化的曲线图。\n\n 图5是示出其中优选使用根据本发明的稀土磁体的已知旋转机械的图。\n\n [符号说明]\n\n 22个稀土磁铁\n\n 22A气缸\n\n 100充磁器\n\n 103轴\n\n 110转子\n\n 112径向环形磁铁\n\n 120、120a，120b磁路\n\n 122、122a，122b轭\n\n 124a，124b线圈\n\n 130个支持\n\n 132旋转机构\n\n H1，H2外部磁场');
INSERT INTO `os_patent_instruction_text` VALUES (12941, 22770, 'TECHNICAL FIELD\n\n[0001]The present invention relates to a method for manufacturing a sintered magnet.\n\nBACKGROUND ART\n\n[0002]A rare earth sintered magnet is manufactured by pulverizing a rare earth magnetic alloy (material alloy) into alloy powder, compacting the alloy powder to obtain a green compact, sintering the green compact and subjecting the sintered body to an aging treatment, machining and other such processes. Currently, as rare earth sintered magnets, two types of magnets, rare earth-cobalt type magnets and rare earth-iron-boron type magnets, are used extensively in various fields of applications. Among others, rare earth-iron-boron type magnets (which will be referred to herein as “R—Fe—B type magnets” wherein R is at least one type of element selected from the group consisting of rare earth elements and yttrium, Fe is iron, and B is boron) are used more and more often in various types of electronic appliances because the R—Fe—B type magnets exhibit a magnetic energy product that is higher than any of other various types of magnets and yet are relatively inexpensive. A transition metal element such as Co may be substituted for a portion of Fe. Also, carbon may be substituted for up to one half of boron.\n\n[0003]To manufacture a sintered magnet having a desired shape, R—Fe—B type rare earth magnet powder (i.e., rare earth alloy powder) is first compacted with a press, to obtain a green compact having a size that is larger than that of a final magnet product. The green compact is sintered, and the resultant sintered body is ground or cut with a cemented carbide saw blade, a rotary grindstone or the like to render the sintered body to have a desired shape. For example, a sintered body is first manufactured as a block, and the block is then sliced with a saw blade or the like to obtain a plurality of sintered plates.\n\n[0004]A sintered body of a rare earth alloy magnet such as a R—Fe—B type magnet is very rigid and brittle and has a large machining load. Therefore, high-precision grinding of such a sintered body requires hard work and takes long time. For this reason, the machining process is a major cause of increases in the production cost and time thereof.\n\n[0005]To solve the above problem, grinding of a green compact before sintering has been proposed, for example, in Japanese Laid-Open Patent Publication No. 8-64451 and No. 8-181028.\n\n[0006]Japanese Laid-Open Patent Publication No. 8-64451 discloses a technique of chamfering a green compact for a bow ferrite magnet with a rotary grindstone or a rotary brush. If this technique is applied to a green compact for a R—Fe—B type magnet that is highly susceptible to oxidation, the following problem may occur. Friction heat is generated between a rotary grindstone or a rotary brush and the green compact, and this may cause rapid reaction of a rare earth element and iron in the green compact with oxygen and water in the atmosphere. As a result, ignition of the green compact may possibly occur in the worse case. Even if the worst case is avoided, the magnetic properties of the magnet will be deteriorated.\n\n[0007]Japanese Laid-Open Patent Publication No. 8-181028 discloses a technique of preventing oxidation of a green compact during machining thereof, in which the green compact is immersed in mineral oil, synthetic oil or plant oil, and is cut with a rotating blade in the immersed state.\n\n[0008]This technique indispensably requires a process step for removing the mineral oil or other substances from the green compact after the cutting and before sintering. If degreasing is insufficient, carbon contained in the oil acts as an impurity in the sintering process, and this deteriorates the magnetic properties.\n\n[0009]In addition, in the cutting with a saw blade and the like, a large cutting clearance is required for the green compact, and this decreases the yield of the material.\n\nDISCLOSURE OF INVENTION\n\n[0010]In order to overcome the problems described above, preferred embodiments of the present invention provide a method for manufacturing a sintered magnet in which the machining load is greatly reduced and heat generation in the green compact is minimized.\n\n[0011]The method for manufacturing a sintered magnet according to preferred embodiments of the present invention includes the steps of producing a green compact of powder for the sintered magnet, machining the green compact with a wire-saw, and sintering the green compact.\n\n[0012]In a specific preferred embodiment of the present invention, the wire-saw includes a wire having an outer diameter in a range of about 0.05 mm to about 3.0 mm and abrasive grains fixed to the wire.\n\n[0013]In another preferred embodiment of the present invention, the step of machining the green compact includes the step of slicing the green compact into a plurality of parts.\n\n[0014]The step of machining the green compact preferably includes the steps of slicing the green compact while forming cut surfaces by relatively moving the green compact with respect to the wire-saw, and relatively moving the wire-saw again along the cut surfaces.\n\n[0015]Preferably, the relative movement in the step of machining the green compact is performed in a horizontal plane, and the method may further include the step of separating the plurality of parts obtained in the step of slicing the green compact in a substantially perpendicular direction.\n\n[0016]Preferably, the method further includes the step of applying anti-fusing powder to a gap between the plurality of parts after the step of machining the green compact.\n\n[0017]In a preferred embodiment of the present invention, the step of machining the green compact is performed in an inert gas atmosphere having an oxygen concentration in a range of about 5% to about 18% in mole ratio.\n\n[0018]In another preferred embodiment of the present invention, the step of machining the green compact is performed with a cutting fluid (or liquid lubricant) applied to at least a portion of the wire-saw that contacts the green compact.\n\n[0019]The cutting fluid preferably includes a hydrocarbon base organic solvent.\n\n[0020]The hydrocarbon base solvent preferably includes isoparaffin.\n\n[0021]Preferably, the cutting fluid is a dispersion that includes anti-fusing powder.\n\n[0022]Preferably, the cutting fluid is applied to the wire-saw by immersion, dropping or spraying, or other suitable process.\n\n[0023]The green compact may be machined in the cutting fluid.\n\n[0024]In a preferred embodiment of the present invention, the step of producing a green compact includes the step of adding a lubricant to the powder for the sintered magnet.\n\n[0025]In another preferred embodiment of the present invention, the powder for the sintered magnet has residual magnetization in a range of about 0.001 T to about 0.1 T.\n\n[0026]In still another preferred embodiment of the present invention, the powder for the sintered magnet is powder of a R-T-B type rare earth alloy (R is at least one type of element selected from the group consisting of rare earth elements and yttrium, T is a transition metal element including iron, and B is boron). The average particle size (FSSS particle size) of the powder for the sintered magnet is preferably in the range of about 2.0 μm to about 8.0 μm.\n\n[0027]Other features, elements, characteristics, steps and advantages of the present invention will become more apparent from the following detailed description of preferred embodiments with reference to the attached drawings.\n\nBRIEF DESCRIPTION OF DRAWINGS\n\n[0028]FIG. 1 illustrates an exemplary construction of a wire-saw machine suitably used for preferred embodiments of the present invention.\n\n[0029]FIG. 2 is a flowchart distinguishing the cutting of a green compact before sintering according to preferred embodiments of the present invention from the conventional cutting of a sintered body, with respect to the number of manufacturing steps.\n\n[0030]FIG. 3 is a perspective view diagrammatically illustrating a wire-saw used in an example of preferred embodiments of the present invention.\n\n[0031]FIG. 4 is a graph showing the compaction density dependence of the machining load observed when a cutting fluid is added to powder for the sintered magnet.\n\n[0032]FIG. 5 is a graph showing the wire feed speed dependence of the machining load observed when a lubricant is added.\n\n[0033]FIG. 6 is a graph showing the cutting speed dependence of the machining load observed when a lubricant is added.\n\n[0034]FIG. 7A is a graph showing the relationship between the profile irregularity (wave) of a cut surface after sintering and the compaction density.\n\n[0035]FIG. 7B is a perspective view illustrating a wave measurement range (about 32 mm) on the cut surface of FIG. 7A.\n\n[0036]FIG. 7C is a graph showing measurement data (step data) of the wave of FIG. 7A.\n\n[0037]FIG. 8 illustrates preferred ways of sintering of a green compact sliced with a wire-saw according to preferred embodiments of the present invention.\n\n[0038]FIG. 9 is a diagrammatic illustration of compact machining system including a wire-saw machine suitably used for preferred embodiments of the present invention.\n\n[0039]FIG. 10 is a diagrammatic illustration of another wire-saw machine suitable for use in preferred embodiments of the present invention.\n\n[0040]FIG. 11 is a diagrammatic exploded perspective view of a compact holding device of the wire-saw machine.\n\n[0041]FIG. 12 is a diagrammatic illustration of a wire-saw machine 40 suitably used in Preferred Embodiment 3 of the present invention.\n\n[0042]FIG. 13 is a diagrammatic illustration of a wire-saw machine 50 suitably used in Preferred Embodiment 3 of the present invention.\n\nBEST MODE FOR CARRYING OUT THE INVENTION\n\n[0043]According to the present invention, a green compact of powder for a sintered magnet is machined by wire-sawing before sintering. The wire-sawing is a technique of machining a green compact, in which a wire traveling in one direction or in opposite directions is pressed against the green compact to be machined so that the green compact is machined with abrasive grains existing between the wire and the green compact.\n\n[0044]The inventors of the present invention discovered that in the machining of a green compact of rare earth alloy powder which is susceptible to oxidation before sintering, the problem of heat generation and ignition that may occur when a normal rotary blade or other such tool is used, can be avoided by using the wire described above. The present invention has been developed based on this and other discoveries.\n\n[0045]In a preferred embodiment of the present invention, a wire with abrasive grains fixed to the surface thereof is preferably used. The core wire is preferably made of a material having high tensile strength. For example, the core wire may be made of a hard-drawn metal wire (piano wire), an alloy such as Ni—Cr and Fe—Ni, a metal having a high melting point such as W and Mo, or a bundle of nylon fibers. If the wire is excessively thick, the cutting clearance is large and this decreases the yield of the material. On the contrary, if the wire is excessively thin, the wire may possibly break due to the machining load. Moreover, the cutting resistance increases and this may cause heat generation and ignition. In consideration of the above, the outer diameter of the wire used according to preferred embodiments of the present invention is preferably in the range of about 0.05 mm to about 3.0 mm, more preferably in the range of about 0.1 mm to about 1.0 mm. The wire-saw as used herein broadly includes a cutting member having a width in the cutting direction of about 3.0 mm or less, including, for example, a band-saw having a width (or height) of about 3.0 mm or less.\n\n[0046]The abrasive grains are preferably made of a material having high hardness, such as diamond, SiC and alumina The particle size is typically in the range of about 10 μm to about 1000 μm. The abrasive grains are preferably fixed to the surface of the core wire via a bonding layer such as a resin layer. As the resin layer, a phenol resin, an epoxy rein or a polyimide resin may be used. The thickness of the resin layer is preferably about 0.02 mm to about 1.0 mm.\n\n[0047]As the bonding layer, a metal layer may be used in place of the resin layer for fixing the abrasive grains. For example, a wire with abrasive grains fixed thereto by electrodeposition or electroplating (hereinafter, also called “electrodeposited grain wire”) is preferred for its excellent discharge efficiency of saw dust (powder or sludge). That is, the protruding amount of abrasive grains (the height of a portion of the abrasive grains protruding from the surface of the bonding layer) can be made larger when the electrodeposited grain wire is used than when a wire with abrasive grains fixed via a resin layer is used. If sufficient strength is secured, a stranded wire may be used. Use of a stranded wire can further improve the discharge efficiency of saw dust. In the case of using a cutting fluid for improvement of the discharge efficiency of saw dust as will be described later, the electrodeposited grain wire should preferably be used from the standpoint of resistance to the cutting fluid, in addition to the excellent discharge efficiency described above.\n\n[0048]The average particle size D of the abrasive grains preferably satisfies the relationship 30 μm≦D≦1000 μm. In particular, it preferably satisfies the relationship 40 μm≦D≦200 μm. From the standpoint of the cutting efficiency and the discharge efficiency of saw dust, the average distance between adjacent abrasive grains in the wire-saw travel direction is preferably in the range of about 200% to about 600% of the average particle size D, and the protruding amount is preferably in the range of about 15 μm to about 500 μm.\n\n[0049]The green compact is magnetized by an aligning magnetic field applied during compaction. Even when demagnetization is performed for the green compact for removing the magnetization, remanent magnetization of about 0.001 T to about 0.1 T still remains. Although further reduction of the remanent magnetization is possible, this increases the number of process steps and thus, is undesirable in mass production. Due to the remanent magnetization of the green compact, if the cutting clearance is small during cutting of the green compact with a wire-saw, saw dust attaches to cut surface and this makes it difficult to separate cut pieces of the green compact from each other. To avoid this problem, the cutting clearance is preferably about 0.1 mm or more.\n\n[0050]A wire with no abrasive grains fixed to the surface thereof (free grain wire) may be used. When using this type of wire, however, saw dust is less easily discharged and relatively easily settled in a cut groove than when using a wire with abrasive grains fixed to the surface thereof (fixed grain wire). As a result, a larger amount of saw dust may attach to the cut surface due to the remanent magnetization described above. For this reason, use of a fixed grain wire is preferred, with which separation of cut pieces of the green compact is easier.\n\n[0051]During slicing of the green compact into a plurality of pieces, the wire-saw may be relatively moved again along the once-formed cut surface to facilitate separation of the sliced pieces. By this re-passing of the wire-saw along the cut surface, saw dust remaining in the gap between the sliced pieces of the green compact can be discharged, and thus, the sliced pieces can be separated without occurrence of chipping. It is preferable to keep the gap between the sliced compact pieces for re-passing the wire-saw along the cut surface.\n\n[0052]To improve the discharge efficiency of saw dust during the cutting process, the green compact may be cut with a cutting fluid applied to at least a portion of the wire-saw coming into contact with the green compact. By the application of a cutting fluid to the wire-saw, saw dust attaches to the wire-saw more easily, and also saw dust particles cling together more easily. As a result, a larger amount of saw dust attaches to the wire-saw and is discharged from the cut portion.\n\n[0053]There was a concern that a non-sintered compact, which is low in mechanical strength, might be more easily broken with a cutting fluid. According to experiments conducted by the present inventors, however, there was observed no reduction in yield due to decreased strength that may be caused by use of a cutting fluid. On the contrary, the discharge efficiency of saw dust improves by use of a cutting fluid and cut pieces of the green compact can be separated from each other with high probability. As a result, the production process is greatly simplified, and the production yield is greatly improved.\n\n[0054]For example, in cutting of a green compact in an arch shape of which the top and bottom surfaces have different curvatures, the green compact is cut so as to form cut surfaces in the plane including the substantially perpendicular direction when the green compact is placed on a support base (vertical cutting). Cut pieces of the green compact can be sintered as they are without being subjected to a process of separating the cut pieces from each other. Even by this direct sintering, the incidence of fusing of the compact pieces to each other is low. Therefore, a sufficient production yield is secured.\n\n[0055]As a cutting fluid, a nonaqueous cutting fluid (organic solvent or oil-base fluid) is preferably used to prevent oxidation of the green compact. A preferred cutting fluid is a hydrocarbon base organic solvent that is not apt to remain in the sintered magnet as carbon. In particular, a saturated hydrocarbon base solvent (for example, isoparaffin and normal paraffin) is preferred because this type of solvent is easily removed. Moreover, a dispersion with anti-fusing powder dispersed in the cutting fluid may be used to ensure further effective prevention of fusing between the compact pieces after cutting.\n\n[0056]The cutting fluid may be applied to the wire-saw by immersion, dropping or spraying, or other process. Otherwise, the green compact may be immersed in the cutting fluid and cut in the immersed state.\n\n[0057]Hereinafter, various preferred embodiments of the present invention will be described with reference to the relevant drawings.\n\n[0058]FIG. 1 illustrates an exemplary construction of a wire-saw machine according to Preferred Embodiment 1 of the present invention. The illustrated machine includes a drive device 2 supporting a green compact 1 to be machined for driving upward and downward (in the z-axis direction) and a plurality of rolls 3a, 3b, 3c and 3d. \n\n[0059]A wire-saw 4, including a wire and abrasive grains fixed to the wire as described above, is wound in lines around the rolls 3a to 3d and travels in the direction that is substantially parallel to the y-axis. The lines of the wire-saw 4 are preferably arranged at substantially equal pitches in the x-axis direction, and the pitch of the arrangement (wire pitch) is arbitrarily determined depending on the size (thickness) of plates cut from the green compact 1 as a block. In a preferred embodiment of the present invention, the wire pitch is preferably about 1 mm to about 30 mm.\n\n[0060]The outer diameter of the wire used for the wire-saw 4 is preferably in the range of about 0.05 mm to about 3.0 mm in consideration of the wire strength and the cutting clearance. If a rigid sintered body is cut with the wire-saw 4, a tension as large as about 20 N to about 40 N will be applied to the wire. According to preferred embodiments of the present invention, however, in which the soft green compact 1 before sintering is machined, a comparatively small tension of about 0.1 N to about 10 N is applied to the wire, and thus the cutting resistance is small. Therefore, the green compact can be cut and machined without causing a problem of ignition and oxidation even in an atmosphere having a comparatively high oxygen concentration.\n\n[0061]An organic solvent such as isoparaffin and ethyl alcohol may be applied to the wire-saw 4 as a cutting fluid during the machining. The application of the cutting fluid is not required, but can improve the discharge efficiency of saw dust as will be described later.\n\n[0062]The speed (Vy) of the wire-saw 4 in the y-axis direction is herein referred to as the “wire feed speed”. The green compact 1 is pressed against the wire-saw 4 traveling at a predetermined wire feed speed, to be cut/divided (sliced) into a plurality of pieces. The speed (Vz) at which the green compact 1 is pressed against the wire-saw 4, which corresponds to the driving speed of the drive device in the z-axis direction in the illustrated example, is herein referred to as the “cutting speed”. As the cutting speed is higher, the time required for machining is shorter.\n\n[0063]The wire feed speed and the cutting speed are largely influenced by the value of the machining load as will be evident from examples to be described later. To put the machining load in a practically appropriate range, the cutting speed is preferably in the range of about 30 mm/min to about 1200 mm/min, more preferably about 30 mm/min to about 800 mm/min.\n\n[0064]The wire-saw 4 may travel in a fixed direction or may reciprocate in the y-axis directions. In the latter case, a plurality of wires stretched over a substantially rectangular frame may be reciprocated linearly in the y-axis directions with an air cylinder or other suitable device. In place of the air cylinder, a device including a motor and a crank may be used.\n\n[0065]FIG. 2 is a flowchart distinguishing the cutting of a green compact before sintering according to preferred embodiments of the present invention from the conventional cutting of a sintered body, with respect to the number of manufacturing steps. As shown in FIG. 2, in the conventional process, it is necessary to perform the steps of preparing material powder, compacting the powder, sintering a green compact, cutting a sintered body, and subjecting cut pieces of the sintered body to surface treatment and other steps. In the process according to preferred embodiments of the present invention, after the compaction, the green compact is cut before sintering to make compact pieces having a shape and size close to those of final magnet products. In this way, according to preferred embodiments of the present invention, the green compact, which is very soft and easily machined compared with the sintered body, is cut. This greatly reduces the time required for the cutting.\n\n[0066]According to preferred embodiments of the present invention, the contact area of the wire-saw with the green compact is small compared with the contact area of a conventional rotary blade with the green compact, and therefore the amount of heat generation due to friction is extremely small. For example, the contact area is as large as about 1000 mm2 to about 10000 mm2 in the case of using a conventional rotary blade, and the contact area is reduced to about 5 mm2 to about 50 mm2 according to preferred embodiments of the present invention. Thus, the problem of ignition and oxidation of rare earth alloy powder is reliably prevented even when wire-saw machining is performed in a normal atmosphere.\n\n[0067]Note however that, to further suppress oxidation of magnet powder and attain high magnet properties, it is preferable to perform wire-saw machining in an inert gas atmosphere having an oxygen concentration of about 10% to about 15% in mole ratio when the oxygen concentration of the magnet powder exceeds approximately 3000 ppm by weight. In particular, when magnet powder having a low oxygen concentration of about 3000 ppm or less by weight is used for production of a green compact, the magnet powder exhibits significantly high oxidation reactivity. In this case, therefore, the wire-saw machining is desirably performed in an environment in which the oxygen concentration is more strictly limited than that described above (for example, in an inert gas atmosphere having an oxygen concentration of about 2% or less in mole ratio). Control of the oxygen concentration to within the range described above is possible by partially surrounding the machine for cutting, which is realized without the necessity of completely isolating the surroundings of the wire-saw machine from the atmosphere. In this way, when the green compact is cut in a gaseous atmosphere, the atmosphere is preferably controlled.\n\n[0068]In addition, when a green compact is machined in a gaseous atmosphere as described above, a solid or cutting fluid (for example, a fatty ester) is preferably added to the magnet powder before compaction. With a film of the lubricant formed on the surface of the powder, oxidation of the powder is prevented. Alternatively, after production of a green compact, the green compact may be sufficiently impregnated with the lubricant before machining. As such a lubricant, preferred is a lubricant that can be easily removed from the green compact in the sintering process at a later stage.\n\n[0069]In the conventional cutting with a rotary blade, the cutting clearance is large (for example, about 0.5 mm or more in width) and this causes sawdust to fly from the cut portion into the surroundings as dust particles in some cases. This will be very dangerous if such flying saw dust ignites. By using the wire-saw according to preferred embodiments of the present invention, flying of saw dust is greatly minimized and eliminated, thus safe manufacturing is ensured.\n\n[0070]The wire-saw processing according to preferred embodiments of the present invention may also be performed in an organic solvent such as a saturated hydrocarbon base solvent represented by isoparaffin in the immersed state. Degreasing of such an organic solvent is easy. Therefore, the green compact can be degreased in a normal sintering process without the necessity of providing a special degreasing process. Thus, the problem that carbon in the organic solvent deteriorates the magnetic properties of the sintered magnet does not occur.\n\n[0071]Hereinafter, an example of Preferred Embodiment 1 of the present invention will be described.\n\n[0072]In this example, as shown in FIG. 3, a green compact moving upward from a lower position was cut with a wire-saw arranged in three lines in the atmosphere. The outer diameter of the wire (line diameter) of the wire-saw was approximately 0.24 mm and the wire pitch was approximately 5 mm. The green compact to be machined was produced with a known press from magnet powder (FSSS particle size: about 3.0 μm to about 3.2 μm) of an alloy including about 26% by mass of (Nd+Pr), about 5% by mass of Dy, about 1% by mass of B, about 1% by mass of Co, about 0.2% by mass of Al, about 0.1% by mass of Cu and the balance of Fe. The magnet powder was aligned in a magnetic field during the compaction. The applied magnetic field was about 1.2 T. The resultant green compact was in a roughly rectangular shape having approximate dimensions of 15 mm high×41.7 mm wide×66.2 mm depth.\n\n[0073]The position of the green compact with respect to the wire-saw was determined so that the length of the contact portion of the green compact with each wire was about 41.7 mm. The machining load (load applied downward) received by the green compact from the wire-saw during the upward movement of the green compact was measured with a load cell. In the experiment, the wire feed speed was varied in the range of about 100 m/min to about 150 m/min. The cutting speed was varied in the range of about 150 m/min to about 420 mm/min.\n\n[0074]FIG. 4 is a graph showing the compaction density dependence of the machining load. In the measurement shown in FIG. 4, the wire feed speed was about 150 m/min and the cutting speed was about 150 mm/min.\n\n[0075]From FIG. 4, it is seen that the machining load increases with increase of the compaction density. Note however that if the compaction density is excessively low, the green compact decreases in strength and will easily cause cracking and chipping. To avoid this problem, the compaction density is preferably about 3.6 g/cm3 or more at a minimum. From various standpoints, the compaction density is preferably in the range of about 3.8 g/cm3 to about 5.0 g/cm3. In consideration of the magnetic properties after sintering and the yield in relation to cracking and chipping of the green compact, the density of the green compact is more preferably in the range of about 4.0 g/cm3 to about 4.7 g/cm3. The true density of the magnet powder (alloy material) is about 7.5 g/cm3.\n\n[0076]FIG. 5 is a graph showing the wire feed speed dependence of the machining load. In this measurement, the cutting speed was about 150 mm/min. FIG. 6 is a graph showing the cutting speed dependence of the machining load observed when the lubricant described above was added. In this measurement, the wire feed speed was about 150 m/min.\n\n[0077]From FIG. 5, it is seen that the machining load decreases with increases in the wire feed speed. From FIG. 6, it is seen that the machining load decreases with decreases in the cutting speed. If the wire feed speed and the cutting speed are set at values in inappropriate levels, the machining load may become excessively large and, as a result, the cut surface of the green compact may be roughened. To state specifically, when the machining load is large, saw mark is formed on the cut surface making the surface uneven to a measurable level. This results in an increase of the number of process steps required for machining after sintering, and also causes an increase of the incidence of chipping at edges of the green compact after cutting.\n\n[0078]FIG. 7A is a graph showing the relationship between the profile irregularity (“wave” or “surface roughness”) of the cut surface after sintering and the compaction density. In this measurement, the wire feed speed was about 150 m/min and the cutting speed was about 150 mm/min. FIG. 7B is a perspective view illustrating the wave measuring range (about 32 mm) on the cut surface, and FIG. 7C is a graph showing measurement data (step data) of the wave. The graph of FIG. 7A was prepared based on the data of FIG. 7C.\n\n[0079]As is seen in FIG. 7A, as the compaction density is higher (for example, about 4.3 g/cm3 or more), the profile irregularity of the sintered body improves.\n\n[0080]Hereinafter, an example of cutting a green compact before sintering according to preferred embodiments of the present invention will be described together with a comparative example of cutting a sintered body, to examine the cutting speed and the wire feed speed capable of providing the most appropriate profile irregularity.\n\n[0081]TABLE 1Cutting speedWire feed speed(mm/min)(m/min)Cutting of green compact150150Cutting of sintered body0.67800\n\n[0082]As is apparent from Table 1, in the cutting of a soft green compact with the wire-saw according to preferred embodiments of the present invention, the cutting speed of more than approximately 200 times as high as that in the comparative example was achieved even under a comparative low wire feed speed. This improvement of the cutting speed, achieved by the reduced machining load, leads to reduction of the process time.\n\n[0083]Table 2 below shows changes in size with sintering and grinding in the example according to preferred embodiments of the present invention.\n\n[0084]TABLE 2Thickness ofCompactioncut compactThickness ofThickness afterdensitypieces (mm)sintered body (mm)grinding (mm)4.14.763.433.334.33.503.414.53.563.45\n\n[0085]The thickness of cut pieces of the green compact immediately after the cutting with the wire-saw (size in the x-axis direction in FIG. 1) was about 4.76 mm, a value determined by subtracting the wire outer diameter (about 0.24 mm) from the wire pitch (about 5 mm).\n\n[0086]By sintering the compact pieces, the thickness decreased by nearly 30%, and further by grinding the sintered body, the thickness decreased by about 0.1 mm. The shrinkage of the green compact by sintering was most significant in the direction of the aligning magnetic field applied during the compaction. In this example, the magnetic field had been applied in the thickness direction of the green compact to align the powder.\n\n[0087]In the conventional cutting, a sintered body already subjected to shrinkage by sintering was cut. Therefore, the ratio of the cutting clearance to the thickness of the sintered body was large. On the contrary, in the cutting according to preferred embodiments of the present invention, in which a green compact before shrinkage is cut, the ratio of the cutting clearanc', '技术领域 \n\n [0001] 烧结磁铁的制造方法技术领域本发明涉及烧结磁铁的制造方法。 \n\n 背景技术 \n\n [0002] 通过将稀土磁性合金(原料合金)粉碎成合金粉末,压实合金粉末以获得生坯,烧结生坯并对烧结体进行时效处理,机械加工等,来制造稀土烧结磁体。 流程。 当前,作为稀土烧结磁体,两种类型的磁体,稀土-钴型磁体和稀土-铁-硼型磁体在各种应用领域中被广泛使用。 其中,稀土-铁-硼型磁体(在本文中称为“ R-Fe-B型磁体”,其中R为选自稀土元素和钇,Fe中的至少一种元素 是铁,而B是硼),因为R-Fe-B型磁铁的磁能积高于任何其他各种类型的磁铁,而且相对便宜,因此越来越多地用于各种类型的电子设备中 。 诸如Co的过渡金属元素可以代替一部分Fe。 同样,碳最多可以取代一半的硼。 \n\n [0003] 为了制造具有期望形状的烧结磁体,首先用压机将R-Fe-B型稀土磁体粉末(即,稀土合金粉末)压实,以获得尺寸大于压实粉末的生坯。 最终磁铁产品。 烧结生坯,并用硬质合金锯片,旋转磨石等研磨或切割所得的烧结体,以使烧结体具有所需的形状。 例如,首先将烧结体制造成块状,然后用锯条等将块状切片以获得多个烧结板。 \n\n [0004] 稀土合金磁体的烧结体,例如R-Fe-B型磁体,非常坚硬,易碎,并且加工负荷大。 因此,对这种烧结体进行高精度的磨削需要艰苦的工作并且需要很长时间。 由于这个原因,机加工工艺是增加其生产成本和时间的主要原因。 \n\n [0005] 为了解决上述问题,例如在日本特开平8-64451号公报和特开平8-181028号公报中提出了在烧结前对生坯进行磨削的方案。 \n\n [0006] 日本公开专利公报第8-64451号公开了一种用旋转磨石或旋转刷对弓形铁氧体磁体的生坯进行倒角的技术。 如果将该技术应用于高度易氧化的R-Fe-B型磁体的生坯,则可能发生以下问题。 旋转砂轮或旋转刷与生坯之间会产生摩擦热,这可能导致生坯中的稀土元素和铁与大气中的氧气和水快速反应。 结果,在更坏的情况下可能会生坯的着火。 即使避免了最坏的情况,磁体的磁性能也会变差。 \n\n [0007] 日本特开平8-181028号公报公开了一种防止生坯在加工过程中氧化的技术,其中,将生坯浸入矿物油,合成油或植物油中,并用旋转刀片切割。 沉浸状态。 \n\n [0008] 该技术必不可少地需要在切割之后和烧结之前从生坯中除去矿物油或其他物质的工艺步骤。 如果脱脂不充分,则油中所含的碳在烧结过程中成为杂质,从而使磁特性劣化。 \n\n [0009] 另外,在用锯片等进行的切割中,生坯需要大的切割间隙,这降低了材料的产量。 \n\n 发明内容 \n\n [0010] 为了克服上述问题,本发明的优选实施方式提供了一种用于制造烧结磁体的方法,其中极大地降低了加工负荷并且使生坯中的发热最小化。 \n\n [0011] 根据本发明优选实施方式的烧结磁体的制造方法包括以下步骤:生产用于烧结磁体的粉末的生坯,用线锯机加工该生坯,以及烧结该生坯。 \n\n [0012] 在本发明的特定优选实施例中,线锯包括外径在大约0.05mm至大约3.0mm范围内的线和固定到该线的磨料颗粒。 \n\n [0013] 在本发明的另一个优选实施例中,加工生坯的步骤包括将生坯切成多个部分的步骤。 \n\n [0014] 加工生坯的步骤优选包括以下步骤:在相对于线锯相对地移动生坯并且沿切面再次相对地移动线锯的同时,在形成切割表面的同时对生坯进行切片。 \n\n [0015] 优选地,在加工生坯的步骤中的相对运动是在水平面内进行的,并且该方法可以进一步包括以下步骤:将在将生坯切片的步骤中获得的多个部分沿基本垂直的方向分离。 \n\n [0016] 优选地,该方法还包括在对生坯进行机械加工的步骤之后将抗熔粉末施加到多个部分之间的间隙的步骤。 \n\n [0017] 在本发明的一个优选实施方案中,加工生坯的步骤在惰性气体气氛中进行,该惰性气体气氛的氧浓度在摩尔比为约5%至约18%的范围内。 \n\n [0018] 在本发明的另一优选实施例中,通过施加到与生坯接触的线锯的至少一部分上的切削液(或液体润滑剂)来执行加工生坯的步骤。 \n\n [0019] 切削液优选包括烃基有机溶剂。 \n\n [0020] 烃基溶剂优选包括异链烷烃。 \n\n [0021] 优选地,切削液是包括抗熔粉末的分散体。 \n\n [0022] 优选地,通过浸入,滴入或喷涂或其他合适的方法将切削液施加到线锯上。 \n\n [0023] 压坯可以在切削液中加工。 \n\n [0024] 在本发明的优选实施方案中,生产生坯的步骤包括将润滑剂添加到用于烧结磁体的粉末中的步骤。 \n\n [0025] 在本发明的另一个优选实施方案中,用于烧结磁体的粉末具有在约0.001T至约0.1T范围内的剩余磁化强度。 \n\n [0026] 在本发明的又一个优选实施方案中,用于烧结磁体的粉末是RTB型稀土合金的粉末(R是选自稀土元素和钇的至少一种元素,T是过渡态。 金属元素,包括铁,而B为硼)。 用于烧结磁体的粉末的平均粒度(FSSS粒度)优选在约2.0μm至约8.0μm的范围内。 \n\n [0027] 通过以下参考附图对优选实施例的详细描述,本发明的其他特征,要素,特征,步骤和优点将变得更加明显。 \n\n 附图说明 \n\n [0028] 图。 图1示出了适用于本发明的优选实施例的线锯机的示例性构造。 \n\n [0029] 图。 图2是根据制造步骤的数量来区分根据本发明的优选实施例的在烧结之前对生坯的切割与对烧结体的常规切割的流程图。 \n\n [0030] 图。 图3是示意性地示出在本发明的优选实施例的示例中使用的线锯的立体图。 \n\n [0031] 图。 图4是示出当将切削液添加到用于烧结磁体的粉末中时观察到的加工负荷的压实密度依赖性的曲线图。 \n\n [0032] 图。 图5是示出当添加润滑剂时观察到的加工负荷的焊丝进给速度依赖性的曲线图。 \n\n [0033] 图。 图6是示出当添加润滑剂时观察到的加工负荷的切削速度依赖性的曲线图。 \n\n [0034] 图。 图7A是示出烧结后的切割面的轮廓不均(波)与压缩密度之间的关系的图。 \n\n [0035] 图。 图7B是示出图6A的切割表面上的波测量范围(约32mm)的透视图。 7 一种。 \n\n [0036] 图。 图7C是示出图6A的波的测量数据(步长数据)的图。 7 一种。 \n\n [0037] 图。 图8示出了根据本发明的优选实施例的烧结用线锯切成的生坯的优选方式。 \n\n [0038] 图。 图9是包括适用于本发明的优选实施例的线锯机的紧凑型加工系统的示意图。 \n\n [0039] 图。 图10是适用于本发明的优选实施例的另一线锯机的示意图。 \n\n [0040] 图。 图11是线锯机的紧凑的保持装置的示意性分解透视图。 \n\n [0041] 图。 图12是线锯机的示意图。 40  适用于本发明的优选实施方式3。 \n\n [0042] 图。 图13是线锯机的示意图。 50  适用于本发明的优选实施方式3。 \n\n 实施本发明的最佳模式 \n\n [0043] 根据本发明,在烧结之前通过线锯加工用于烧结磁体的粉末的生坯。 线锯是一种加工生坯的技术,其中将沿一个方向或相反方向行进的金属丝压在要加工的生坯上,从而用在金属丝和金属丝之间存在的磨粒加工生坯。 绿色紧凑。 \n\n [0044] 本发明的发明人发现,在烧结之前容易氧化的稀土合金粉末的生坯的机加工中,当使用普通的旋转刀片或其他此类工具时,可能会发生发热和着火的问题, 通过使用上述电线可以避免。 基于该发现和其他发现而开发了本发明。 \n\n [0045] 在本发明的优选实施方式中,优选使用在表面固定有磨粒的线。 芯线优选地由具有高拉伸强度的材料制成。 例如,芯线可以由硬拉金属线(钢琴线),诸如Ni-Cr和Fe-Ni的合金,诸如W和Mo的具有高熔点的金属或者由一束金属制成。 尼龙纤维。 如果导线过粗,则切削间隙会很大,这会降低材料的成品率。 相反,如果金属丝太细,则金属丝可能会由于加工负荷而断裂。 此外,切削阻力增加,并且这可能导致发热和着火。 考虑到上述情况,根据本发明的优选实施方式使用的电线的外径优选在约0.05mm至约3.0mm的范围内,更优选在约0.1mm至约1.0mm的范围内。 如本文中所使用的线锯大致包括在切割方向上具有约3.0mm或更小的宽度的切割构件,包括例如具有约3.0mm或更小的宽度(或高度)的带锯。 \n\n [0046] 磨料颗粒优选地由具有高硬度的材料制成,例如金刚石,SiC和氧化铝。粒径通常在约10μm至约1000μm的范围内。 磨粒优选通过诸如树脂层的结合层固定到芯线的表面。 作为树脂层,可以使用酚醛树脂,环氧树脂或聚酰亚胺树脂。 树脂层的厚度优选为约0.02mm至约1.0mm。 \n\n [0047] 作为结合层,可以使用金属层代替树脂层来固定磨粒。 例如,优选通过电沉积或电镀将磨粒固定在其上的线(在下文中,也称为“电沉积线”),因为其锯屑(粉末或污泥)的排出效率优异。 即,与使用通过树脂固定了磨粒的线相比,使用电沉积磨粒线时,可以增大磨粒的突出量(从结合层的表面突出的磨粒的一部分的高度)。 使用层。 如果确保足够的强度,则可以使用多股线。 使用绞合线可以进一步提高锯末的排放效率。 如后所述,在使用切削液提高锯屑的排出效率的情况下,除了上述的优异的排出效率以外,从对切削液的耐性的观点出发,优选使用电沉积颗粒线。  。 \n\n [0048] 磨粒的平均粒径D优选满足30μm≤D≤1000μm的关系。 特别地,优选满足关系40μm≤D≤200μm。 从锯屑的切割效率和排出效率的观点来看,在线锯行进方向上相邻磨料颗粒之间的平均距离优选在平均粒径D的约200%至约600%的范围内,并且 突出量优选在约15μm至约500μm的范围内。 \n\n [0049] 通过压实过程中施加的对齐磁场将生压坯磁化。 即使当对生坯进行去磁以去除磁化时,仍残留约0.001T至约0.1T的剩余磁化强度。 尽管可以进一步减小剩余磁化强度,但这增加了处理步骤的数量,因此在批量生产中是不希望的。 由于生坯的剩余磁化,如果在用线锯切割生坯的过程中切割间隙较小,则锯屑附着在切割表面上,这使得很难将生坯的切割件彼此分离。  。 为了避免该问题,切削间隙优选为约0.1mm以上。 \n\n [0050] 可以使用表面没有固定磨粒的线(自由线)。 然而,当使用这种类型的线材时,与使用在表面上固定有磨粒的线材(固定的线材)相比,锯末不容易被排出并且相对容易地沉积在切槽中。 结果,由于上述的剩余磁化,大量的锯末可能附着在切割表面上。 因此,优选使用固定的谷粒线,由此容易分离生坯的切块。 \n\n [0051] 在将生坯切成多块的过程中,线锯可以再次沿着曾经形成的切割表面相对移动,以促进切成薄片的分离。 通过使线锯沿着切断面再次通过,能够将残留在生坯的切片之间的间隙中的锯末排出,因此能够将切片分离而不会产生碎屑。 最好保持切成薄片的压块之间的间隙,以使线锯沿切割表面重新通过。 \n\n [0052] 为了在切割过程中提高锯屑的排出效率,可以用施加到与该生坯接触的线锯的至少一部分上的切削液来切割该生坯。 通过向线锯施加切削液,锯屑更容易附着在线锯上,并且锯屑更容易粘在一起。 结果,大量的锯末附着在线锯上并从切口部分排出。 \n\n [0053] 人们担心机械强度低的非烧结体可能更容易被切削液破坏。 然而,根据本发明人进行的实验,没有观察到由于使用切削液可能引起的强度降低而导致成品率降低。 相反,通过使用切削液可以提高锯末的排出效率,并且可以将生坯的切块彼此分离的可能性很高。 结果,极大地简化了生产过程,并且极大地提高了产量。 \n\n [0054] 例如,在切割具有顶部和底部表面具有不同曲率的拱形的生坯时,将生坯切割成当将生坯放置在其上时在包括基本垂直方向的平面中形成切割表面。 支撑底座(垂直切割)。 压坯的切块可以原样烧结,而无需经受切块彼此分离的过程。 即使通过这种直接烧结,紧密块彼此融合的可能性也很低。 因此,确保了足够的产量。 \n\n [0055] 作为切削液,为了防止生坯氧化,优选使用非水切削液(有机溶剂或油基流体)。 优选的切削液是烃基有机溶剂,其不易于以碳的形式残留在烧结磁体中。 特别地,优选饱和烃基础溶剂(例如,异链烷烃和正链烷烃),因为这种类型的溶剂易于除去。 此外,可以使用在切削液中分散有抗熔粉末的分散液,以确保进一步有效地防止切削后的压块之间的熔合。 \n\n [0056] 可以通过浸入,滴入或喷涂或其他方法将切削液施加到线锯上。 否则,生坯可能浸没在切削液中并以浸没状态被切开。 \n\n [0057] 在下文中,将参考相关附图描述本发明的各种优选实施例。 \n\n [0058] 图。 图1示出了根据本发明的优选实施例1的线锯机的示例性构造。 所示机器包括驱动装置 2  支持绿色契约 1  被加工成用于上下驱动(沿z轴方向)和多个辊 3 a , 3 b , 3 c  和 3 d.  \n\n [0059] 线锯 4 包括金属丝和如上所述固定在金属丝上的磨料颗粒被缠绕成线 3 a  至 3 d  并沿基本平行于y轴的方向行进。 线锯的线 4  最好在x轴方向上以大致相等的间距排列,并且根据从生坯切出的板的尺寸(厚度)任意确定排列的间距(线间距)。 1  作为一个块。 在本发明的优选实施例中,导线节距优选为约1mm至约30mm。 \n\n [0060] 线锯所用线的外径 4  考虑到线的强度和切割间隙,优选在约0.05mm至约3.0mm的范围内。 如果用线锯切割刚性烧结体 4 然后,将大至约20 N至约40 N的张力施加到金属丝上。 然而,根据本发明的优选实施方案,其中软生坯 1  在加工烧结之前,将大约0.1N至大约10N的较小的张力施加到金属丝上,因此切削阻力较小。 因此,即使在氧浓度相对较高的气氛中,也可以在不引起着火和氧化的问题的情况下切割和加工生坯。 \n\n [0061] 可以将有机溶剂(例如异链烷烃和乙醇)应用于线锯 4  在加工过程中用作切削液。 不需要施加切削液,但是如后所述,可以提高锯屑的排出效率。 \n\n [0062] 速度(V y )的线锯 4  沿y轴方向的“焊丝进给速度”在本文中称为“焊丝进给速度”。 绿色契约 1  压在钢丝锯上 4  以预定的送丝速度行进,被切割/分割(切成多段)。 速度(V z )绿色紧凑 1  压在钢丝锯上 4 在所示的示例中,将与驱动装置在z轴方向上的驱动速度相对应的速度称为“切割速度”。 切削速度越高,加工所需的时间越短。 \n\n [0063] 从后述的例子可知,焊丝进给速度和切削速度在很大程度上受到加工负荷的值的影响。 为了使加工负荷在实用上合适的范围内,切削速度优选在约30mm / min至约1200mm / min的范围内,更优选在约30mm / min至约800mm / min的范围内。 \n\n [0064] 线锯 4  可以沿固定方向行进或可以在y轴方向上往复运动。 在后一种情况下,可以利用气缸或其他合适的装置使在大致矩形的框架上拉伸的多根线在y轴方向上线性地往复运动。 代替气缸,可以使用包括电动机和曲柄的装置。 \n\n [0065] 图。 图2是根据制造步骤的数量来区分根据本发明的优选实施例的在烧结之前对生坯的切割与对烧结体的常规切割的流程图。 如图1所示。 参照图2,在常规方法中,需要执行以下步骤:制备原料粉末,压实粉末,烧结生压坯,切割烧结体,以及对烧结体的切割件进行表面处理等步骤。 在根据本发明的优选实施方式的方法中,在压实之后,在烧结之前切割生坯,以制造具有与最终磁体产品的形状和尺寸接近的形状和尺寸的压块。 以此方式,根据本发明的优选实施方式,与烧结体相比,非常压实且容易加工的生坯被切割。 这大大减少了切割所需的时间。 \n\n [0066] 根据本发明的优选实施例,线锯与生坯的接触面积比常规旋转刀片与生坯的接触面积小,因此,由于摩擦而产生的热量非常大。 小。 例如,接触面积大约为1000毫米 2  到约10000毫米 2  在使用常规旋转刀片的情况下,接触面积减小到约5 mm 2  到约50毫米 2  根据本发明的优选实施例。 因此,即使在正常环境下进行线锯加工时,也可靠地防止了稀土合金粉末的着火和氧化的问题。 \n\n [0067] 然而,要注意的是,为了进一步抑制磁体粉末的氧化并获得高的磁体性能,优选在氧气浓度为摩尔比约10%至约15%的惰性气体气氛中进行线锯加工。 磁铁粉末的重量百分比超过约3000ppm。 特别地,当具有按重量计约3000ppm或更低的低氧浓度的磁体粉末用于生坯的生产时,该磁体粉末表现出明显高的氧化反应性。 因此,在这种情况下,希望在氧浓度比上述严格限制氧的环境中(例如,在氧浓度为约2%以下的惰性气体气氛中)进行线锯加工。 摩尔比)。 通过部分地包围切割机,可以将氧浓度控制在上述范围内,这实现了而不必将线锯机的周围环境与大气完全隔离。 以此方式,当在气体气氛中切割生坯时,优选控制气氛。 \n\n [0068] 另外,当如上所述在气体气氛中对生坯进行机械加工时,优选在压实之前将固体或切削液(例如脂肪酯)添加至磁体粉末。 通过在粉末的表面上形成润滑剂膜,防止了粉末的氧化。 可替代地,在生坯的生产之后,可以在加工之前用润滑剂充分地浸渍生坯。 作为这样的润滑剂,优选在以后的烧结工序中容易从生坯中除去的润滑剂。 \n\n [0069] 在利用旋转刀片的常规切割中,切割间隙大(例如,宽度约为0.5mm或更大),并且这在某些情况下导致锯屑以灰尘颗粒的形式从切割部分飞到周围。 如果这种飞行看到灰尘点燃,这将是非常危险的。 通过使用根据本发明的优选实施例的线锯,极大地最小化和消除了锯末的飞扬,从而确保了安全的制造。 \n\n [0070] 根据本发明的优选实施方式的线锯加工还可以在有机溶剂如以异链烷烃为代表的饱和烃基溶剂中以浸渍状态进行。 这种有机溶剂容易脱脂。 因此,可以在正常的烧结过程中对生坯进行脱脂,而无需提供特殊的脱脂过程。 因此,不会发生有机溶剂中的碳使烧结磁铁的磁特性劣化的问题。 \n\n [0071] 以下,将描述本发明的优选实施例1的示例。 \n\n [0072] 在该示例中,如图2所示, 如图3所示,用布置在大气中的三行的线锯切割从下部位置向上移动的生坯。 线锯的线的外径(线径)约为0.24mm,线距约为5mm。 待加工的生坯用已知的压机由包含约26质量%的(Nd + Pr),约5%质量的Nb的合金的磁体粉末(FSSS粒度:约3.0μm至约3.2μm)的合金制成。  Dy,约1质量%的B,约1质量%的Co,约0.2质量%的Al,约0.1质量%的Cu和余量的Fe。 在压制过程中将磁铁粉末在磁场中对准。 施加的磁场为约1.2T。所得的压粉坯为大致矩形形状,其近似尺寸为15mm高×41.7mm宽×66.2mm深。 \n\n [0073] 确定生坯相对于线锯的​​位置,以使生坯与每条线的接触部分的长度为约41.7mm。 用测力传感器测量在生坯向上运动期间由生坯从线锯承受的加工载荷(向下施加的载荷)。 在实验中,送丝速度在约100m / min至约150m / min的范围内变化。 切割速度在约150m / min至约420mm / min的范围内变化。 \n\n [0074] 图。 图4是示出加工负荷的压实密度依赖性的曲线图。 在图9所示的测量中, 如图4所示,焊丝进给速度为约150m / min,切割速度为约150mm / min。 \n\n [0075] 从图。 由图4可知,加工负荷随着压实密度的增加而增加。 但是请注意,如果压实密度过低,则生压坯的强度会降低,并容易引起破裂和碎裂。 为了避免该问题,压实密度优选为约3.6g / cm。 3  或更多。 从各种观点来看,压实密度优选在约3.8g / cm的范围内。 3  至约5.0 g / cm 3 。 考虑到烧结后的磁性能以及与生坯的破裂和碎裂有关的产率,生坯的密度更优选在约4.0g / cm的范围内。 3  至约4.7 g / cm 3 。 磁铁粉末(合金材料)的真实密度约为7.5 g / cm 3 。 \n\n [0076] 图。 图5是示出加工负荷的焊丝进给速度依赖性的曲线图。 在该测量中,切割速度为约150mm / min。 图。 图6是示出当添加上述润滑剂时观察到的加工负荷的切削速度依赖性的曲线图。 在该测量中,焊丝进给速度为约150m / min。 \n\n [0077] 从图。 由图5可见,加工负荷随着焊丝进给速度的增加而减小。 从图。 由图6可知,随着切削速度的降低,加工负荷降低。 如果将焊丝进给速度和切割速度设定为不适当的值,则加工负荷可能变得过大,结果,生坯的切割面可能会变粗糙。 具体地讲,当加工负荷大时,在切割面上形成锯痕,使表面不平整到可测量的水平。 这导致烧结后机加工所需的处理步骤的数量增加,并且还导致切割后的生坯的边缘处碎裂的发生率增加。 \n\n [0078] 图。 图7A是示出烧结后的切割面的轮廓不均(“波”或“表面粗糙度”)与压实密度之间的关系的图。 在该测量中,焊丝进给速度为约150m / min,切割速度为约150mm / min。 图。 图7B是表示切割面上的波测量范围(约32mm)的立体图。 图7C是示出波的测量数据(步长数据)的图。 图的图。 基于图7的数据准备图7A的数据。 7 C。 \n\n [0079] 如图1所示, 如图7A所示,当压实密度较高时(例如,约4.3 g / cm 3  以上,则烧结体的轮廓不均改善。 \n\n [0080] 在下文中,将描述根据本发明的优选实施方式的在烧结前切割生坯的示例以及切割烧结体的比较例,以检查能够提供最合适轮廓的切割速度和送丝速度。 不规则。 \n\n [0081] \n\n   表格1  切割速度 送丝速度  (毫米/分钟) (米/分钟)  切割绿色压坯 150 150  切割烧结体 0.67 800 \n\n [0082] 从表1中可以明显看出,在根据本发明的优选实施方式的用线锯切割软生坯的过程中,即使在低温下也可以实现比比较例高约200倍的切割速度。 比较低的送丝速度。 通过降低加工负荷实现了切削速度的提高,从而缩短了加工时间。 \n\n [0083] 下表2示出了在根据本发明的优选实施方式的实例中,随着烧结和研磨的尺寸变化。 \n\n [0084] \n\n    表2  厚度  压实 切紧凑 厚度 厚度后  密度 件(毫米) 烧结体(mm) 磨削(mm)  4.1 4.76 3.43 3.33  4.3 3.50 3.41  4.5 3.56 3.45 \n\n [0085] 刚用线锯切割后的生坯的切割片的厚度(图1中的x轴方向的尺寸)为约4.76mm,该值是通过减去线外径(约0.24mm)而确定的。 距线距(约5毫米)。 \n\n [0086] 通过烧结这些致密片,厚度减小了近30%,并且进一步通过研磨该烧结体,厚度减小了约0.1mm。 通过烧结,生坯的收缩在压实期间施加的取向磁场的方向上最显着。 在该示例中,已经在生坯的厚度方向上施加了磁场以对准粉末。 \n\n [0087] 在常规切割中,切割已经通过烧结而收缩的烧结体。 因此,切削间隙与烧结体的厚度之比大。 相反,在根据本发明的优选实施方式的切割中,其中在切割收缩之前的生压坯,当金属丝具有相同的外径时,切割间隙与生压坯的厚度的比率相对较小。  。 这可以使通过切割浪费的材料量最小化,从而有助于提高材料的产量(使用效率)。 \n\n [0088] 在下文中,参考图2。 参照图8,将描述烧结用线锯切成的生坯的优选方式(在烧结过程中切成薄片的片的布置方式)。 \n\n [0089] 如图1所示。 如图8所示,如果用线锯切开的紧凑片以彼此紧密面对的切割面进行烧结,则切割面趋于彼此融合(或焊接)。 当切削间隙小时,更容易发生这种定影问题。 为了避免烧结引起的熔合,优选提供诸如Y的反熔合粉末。 2 Ø 3  切割表面之间的缝隙中有粉末。 这样的抗熔粉末不限于Y 2 Ø 3  粉末,但可由任何与磁铁的稀土元素抗反应的材料制成。 例如,铝粉或薄片 2 Ø 3  可以使用C和C,或者也可以使用其他合适的材料。 \n\n [0090] 可替代地,如图1的下部所示,在用线锯切割之后,可以将紧凑的块放置在它们之间具有扩大的空间的情况下,或者可以将它们分开地烧结。 8 。 在这些情况下,相邻的成形体之间的间隔优选为约0.1mm以上。 \n\n [0091] 图。 图9示出了磁体粉末压块生产系统的示例性构造。 100  包括线锯机 20  根据本发明的优选实施例2。 \n\n [0092] 磁铁粉紧凑生产系统 100  包括压实机 10  和线锯机 20 。 磁铁粉紧凑生产系统 100  还包括皮带输送机 16  用于运输绿色压坯 1  从压实机 10  到线锯机 20 ,皮带输送机 42  用于运输切片的小块 1 a  从线锯机 20  到烧结盒 50 和转移机 30  用于转移生坯 1  从皮带输送机 16  到线锯机 20  并传送紧凑的零件 1 a  从线锯机 20  到皮带输送机 42 。 \n\n [0093] 磁铁粉紧凑生产系统 100  带有防护墙 70  以便用氮气代替空气,例如至少降低线锯机周围的氧气浓度 20 。 在所示示例中,系统距离皮带输送机中途的区域 16  到烧结盒 50  防护墙封闭 70 ,然后将氮气送入保护墙所围成的区域 70  使氧浓度控制在上述范围内。 \n\n [0094] 在下文中,磁铁粉坯生产系统的运行 100  将进行描述。 \n\n [0095] 压实机 10  包括上拳 14 a 一拳 14 b  和一个死 14 c ,以及用于操作这些组件的机制和控制机制(均未显示)。 磁铁粉末掉入由模具通孔限定的空腔中 14 c  下冲头的上表面 14 b  使用进纸匣 12 ,使空腔中充满磁铁粉末。 用上下冲头单轴压粉 14 a  和 14 b ,生产绿色压坯 1 。 压实机 10  磁粉可以具有磁路(未示出),以使得在压实期间向磁体粉末施加对准磁场。 对准磁场的方向可以基本平行于或基本垂直于按压方向。 压实机 10  电磁线圈还可以设有用于产生退磁场的磁路(未示出)。 \n\n [0096] 绿色契约 1  由压实机生产 10  用皮带输送机运输 16  到保护墙封闭的区域 70  其中线锯机 20  已安装。 皮带输送机 16 可以设置有用于产生退磁场的磁路(未示出)或用于向生坯喷射诸如氮气的惰性气体的机构。 1 ,用于去除附着在生坯上的磁铁粉末 1 。 \n\n [0097] 在保护墙封闭的区域内 70 ,绿色紧凑 1  转移到线锯机 20 ,安装在平台上 28 ,用手臂 34  转移机的 30  并放置在适当的位置。 转移机 30  有两臂 34  和 36  在轨道上 32 。 手臂 34  和 36  按住/释放绿色契约 1  或切成薄片的小块 1 a  例如,带有电磁吸盘(磁性吸引力保持机构)。 手臂 34  和 36  可单独垂直移动,也可沿轨道移动 32 。 武器的运作 34  和 36  由定序器控制,例如,单独地或组合地。 手臂 34  和 36  否则可能会抓住绿色压坯 1  例如带有气缸。 \n\n [0098] 绿色契约 1  由线锯机水平切片 20  分成多个小块 1 a  如稍后将详细描述的。 紧凑的夹持装置 22  相对于线锯单元相对移动 24  切绿色压实 1  带线锯 24 b  线锯单元的 24 。 压坯的相对速度(切割速度) 1  关于线锯 24 b  可以通过改变电动机的转速来调节 26 。 所得的多个致密件 1 a  被手臂吸引并握住 34 ,并移至平台上的后退位置 28 。 \n\n [0099] 紧凑的作品 1 a  在平台上的后退位置 28  被手臂吸引并握住 36  每个小块的顶面一个接一个地转移到一个托盘上 44  放在皮带输送机上 42  一一分开。 在该优选实施例中,生坯 1  被切片(切割)以具有水平切割表面。 因此,通过吸引每个紧凑块的顶面(或切割面) 1 a  到手臂 36  并移动手臂 36  基本上垂直于重力方向(沿重力方向),仅垂直于切割表面的力起作用,并且基本上没有剪切力作用在切割表面上。 这样可以防止小块碎裂 1 a.  \n\n [0100] 预定数量的紧凑块之后 1 a  放在托盘上 44 , 托盘 44  被运送到烧结盒中 50  带式输送机 42 。 烧结盒 50  具有多个机架,每个机架由多个支撑杆制成。 机架的高度通过升降机的垂直移动进行调整 60  以便接收托盘 44  从皮带输送机 42 。 \n\n [0101] 放置预定数量的托盘后 44  在烧结情况下 50 ,烧结盒 50  被运送到烧结炉。 随后,执行与优选实施例1中描述的那些类似的处理步骤以完成烧结磁体的制造。 \n\n [0102] 线锯机的构造和操作 20  将参考图1至图6详细描述优选实施例2中的实施例。  10和11。 \n\n [0103] 线锯机 20  包括紧凑的固定装置 22  和线锯单元 24 。 \n\n [0104] 如图1所示。  11,紧凑的保持装置 22  有底板 22 a 背板 22 b  和两个侧板 22 c 。 背板 22 b  有凹槽 26  用于在切割生坯之后容纳线锯 1 。 每个凹槽 26 其大小(宽度和深度)足够大,可以完全容纳线锯。 没有凹槽 26 ,已到达背板的线锯 22 b  可能会垂直移位和/或可能在背板之间形成间隙 22 b  和紧凑的作品 1 a ,导致在生坯的切割端部出现碎裂 1 。 两侧板 22 c  有缝 23  用于线锯的通过,并将生坯夹在中间 1  和切成薄片的小块 1 a  在整个切割过程之间。 \n\n [0105] 绿色契约 1  放在底板上 22 a  紧凑的保持装置的 22 ,被两个侧板夹在中间 22 c ,并且相对于线锯单元相对移动 24  同时被背板支撑 22 b 。 背板 22 b  和侧板 22 c  握住绿色契约 1  例如用一个气缸(未显示),然后松开小块 1 a  切割后。 \n\n [0106] 线锯机 24  有一个框架 24 a  在其上的三个固定谷物线锯 24 b  如图2所示,拉伸 10 。 框架 24 a  可滑动地连接到导轨 25  安装在车站上 28 。 框架 24 a  连接到曲柄 24 d  耦合到电机 24 c  沿着铁轨往复运动 25  随着电机的旋转 24 c  沿图1中箭头A所示的方向。 10 。 \n\n [0107] 绿色契约 1  由小型保持装置保持 22  相对于往复线锯相对移动 24 b  沿图2中箭头B所示的方向。 10 。 具体来说,线锯 24 b  沿着缝隙穿过 23  侧板的 22 c  紧凑的保持装置的 22  最终到达凹槽 26  背板的 22 b ,绿色紧凑 1  被切成多个小块 1 a 。 紧凑的保持装置 22 ,它仍然保留着紧凑的碎片 1 a 然后,在钢丝锯同时沿相反方向移动(退回)(参见图10中的箭头B)。 24 b  正在往复运动。 通过钢丝锯的重新通过 24 b  沿切面(多个紧密块之间的间隙) 1 a ),可将残留在切割面上的锯末可靠地清除掉。 \n\n [0108] 由于线锯的直径 24 b  相对较小,因此,锯末的排出效率低,在致密片之间残留大量锯末 1 a 。 这可能会导致相邻的压块之间紧密接触 1 a ,并且很难分离出紧凑的碎片 1 a  彼此之间。 特别地,通过施加取向磁场而形成的生压坯的磁体粉末具有残留的磁化强度,这降低了放电效率。 如果紧凑块 1 a  在这种状态下彼此分离,可能会在紧凑的零件中发生碎裂 1 a 。 通过线锯的重新通过 24 b  沿切割面,锯屑残留在紧凑块之间的间隙中 1 a  去除,因此,紧凑的碎片分离 1 a  彼此之间可能不会发生碎裂。 即,如上所述,致密件 1 a  只需握住每个紧凑块的顶面即可将它们彼此分开 1 a  通过用电磁吸盘吸引并向上提起紧凑的块。 \n\n [0109] 线锯第二次通过的速度 24 b  去除锯屑的速度可能高于线锯的通过速度(切割速度) 24 b  在切割过程中。 线锯的第二次通过 24 b  优选以基本上等于或高于切割过程中的通过速度的速度进行切削,因为如果第二次通过的速度太低,则可能无法获得足够的锯屑排出效果。 线锯第二次通过的方向 24 b  不一定与切削过程中的方向相反,但相反的方向是优选的,因为沿相反方向的第二次通过还可以用作恢复紧凑型夹持装置的过程 22  到原始位置以接收下一个绿色契约 1 。 \n\n [0110] 在所示的示例中,绿色契约 1  和钢丝锯 24 b  在水平面上彼此相对移动以进行切割。 重新通过线锯获得的效果 24 b  沿着上述切割面的切割也可以通过将生坯压实的应用获得 1  和钢丝锯 24 b  例如,如在优选实施例1中那样,在大致垂直的平面内彼此相对地运动。 \n\n [0111] 线锯数量 24 b  伸展在框架上 24 a  不限。 线锯的张力 24 b  (例如,约0.05N至约10N)可以根据硬度(容易加工),切削速度和其他因素适当地设定。 紧凑型握持装置的移动速度 22  (切割速度)可以根据线锯的厚度适当设定 24 b ,进给速度(行进速度),张力,生坯的硬度 1  和其他功能。 通过适当的调整,可以使切割表面光滑,并且可以减少诸如研磨的处理步骤。 \n\n [0112] 在所示的示例中,线锯 24 b  用马达往复运动 24 c  和曲柄 24 d 。 或者,线锯 24 b  可以通过各种已知方式中的任何一种来旅行。 例如,可以使长丝沿与大型线锯机相同的方向或一个方向行进。 否则,可以使用环形线锯。 由于绿色紧凑 1  可以通过减少线锯的磨损来轻松地切割锯齿,不必提供新的锯齿。 这使得可以使用各种驱动方法。 \n\n [0113] 防止切割过程中产生的锯屑飞到机械零件(包括电机)上 24 c ,曲柄 24 d ,马达 26  和滚珠丝杠 27 )通过小块的相对运动 1 a  和钢丝锯 24 b  在水平面和线锯的往复运动 24 b  如上所述在水平面中。 其优点在于,机器的维护容易。 如果具有剩余磁化强度的磁铁粉末飞到机械零件上,则这种粉末难以去除并且可能导致机械零件损坏。 绿色压坯的切割 1  在水平面上的优点还在于紧凑的部件 1 a  如上所述,它们可以彼此分开而不产生剪切力。 \n\n [0114] 绿色契约 1  由压实机形成 10  放置在紧凑的固定装置中 20  通过转移机安装到位 30 。 如果目标 34  设有旋转机构,可以切割生坯 1  在基本平行于生坯的任意表面的方向上 1 。 换句话说,可以相对于生坯中的对准磁场的方向任意地确定切割表面。 1 。 例如,当绿色紧凑 1  通过基本平行的压制生产的产品被放置在紧凑的固定装置中 22  实际上,绿色契约 1 将在基本上垂直于剩余磁化强度的平面上切割。 但是,通过提供手臂 34  通过能够在垂直面上旋转90°C的机制,压坯 1  可以在基本上平行于剩余磁化强度的平面上切割金属氧化物。 否则,绿色紧凑 1  可以在基本上垂直于残余磁化的平面上切割通过基本上垂直的压制产生的应力。 \n\n [0115] 图。 图12示出了线锯机的示例性构造。 40  适用于本发明的实施方式3的烧结磁铁的制造方法。 \n\n [0116] 线锯机 40  如图所示。 图12所示的线锯机与图12所示的线锯机不同。  1是润滑剂涂敷装置 5  提供。 具有与图1中所示的线锯机基本相同的功能的部件包括: 与图1相同的部分用相同的附图标记表示,并且省略其重复描述。 \n\n [0117] 中线锯机 40 ,切削液 6  应用于线锯 4  通过润滑剂施加装置 5  线锯之前 4  接触到绿色压坯 1  用于切割。 润滑剂施加装置 5  最好包括一个容器 5 a  用于保留切削液 6  和平底锅 5 b  用于收集从容器溢出的切削液 5 a 。 切削液 6  从容器的顶部开口处保持溢出状态 5 a ,应用于线锯的一部分 4  穿过在容器侧面形成的缝隙 5 a.  \n\n [0118] 在该优选实施方式中,作为切削液,优选使用不易于以碳的形式残留在烧结磁铁中的饱和烃基溶剂(通常为异链烷烃和正构烷烃)。 饱和烃基溶剂的平均分子量优选在约120至约500的范围内。平均分子量小于约120的溶剂的内聚力弱,因此难以有效地将锯末结合在一起。 如果使用平均分子量超过约500的溶剂,则残留在烧结体中的碳量将很大,这不利地降低了烧结体的磁性能。 平均分子量更优选在约140至约450的范围内。 \n\n [0119] 沸点还可以用于指定饱和烃基础溶剂的优选材料。 沸点在约80℃至约250℃的范围内的饱和烃基溶剂是优选的。 沸点小于约80℃的溶剂的内聚力弱,因此难以将锯末有效地粘结在一起。 如果使用沸点超过约250℃的溶剂,则残留在烧结体中的碳的量将很大,这不利地降低了烧结体的磁性能。 沸点小于约80℃的溶剂的挥发性高,因此,除了上述原因之外,从容易污染工作环境的观点出发,这种溶剂也是不利的。 作为饱和烃基溶剂,更优选平均分子量在约140至约450的范围内或沸点在约100℃至约230℃的范围内的溶剂。 仅相对少量的这种溶剂可以表现出有效结合锯末和排出锯末的效果。 特别地,异链烷烃是优选的,因为它可以容易地除去并且因此可以使残留在烧结体中的碳量减少。 异石蜡(闪点:49°C,粘度:1.2毫米 2 / sec,分子量:140至150,沸点:166℃(初始沸点)用于稍后描述的该优选实施方案的实例中。 为了有效地防止切块之间的熔合,可以使用在切削液中分散有抗熔粉的分散液。 在此优选实施例中,Y 2 Ø 3  粉末(氧化钇粉末)优选用作抗熔粉末。 反熔粉不限于Y 2 Ø 3  粉末,但铝粉和薄片 2 Ø 3 ,C和其他合适的材料也可以使用。 可以适当地确定分散在切削液中的抗熔粉末的量。 例如,优选在约10g / L至约500g / L的范围内。 \n\n [0120] 将抗熔粉末分散在切削液中,然后将所得的分散液施加到线锯上 4 ,优选搅拌分散液以避免将反熔粉末保留在容器中 5 a  如图所示。 12 。 应用于丝锯表面的防熔粉末 4  切削液与切削液一起附着在切削过程中形成的切削表面上,并有效地防止了在随后的烧结过程中切削体之间的熔合。 \n\n [0121] 在使用线锯机的示例中,将描述通过使用切削液提高放电效率的效果。 40  如图所示。 12 。 在一个实施例中仅使用异链烷烃作为切削液,在另一个实施例中将氧化钇分散在异链烷烃中(氧化钇浓度:200g / L)。 将这些示例与不使用切削液的正常切削情况进行了比较。 \n\n [0122] 作为绿色的契约 1 如图3所示,是包括具有不同曲率的顶表面和底表面的拱形生坯。 12 。 用于形成生坯的磁铁粉 1  与优选实施方式1中的示例中使用的相同。压实密度为约4.2g / cm 3 。 \n\n [0123] 绿色契约 1  将上述生坯切成在生坯成形体上在包括大致垂直方向的平面上形成切面。 1  放在驱动设备的支撑基座上 2  (垂直切割)。 切割优选使用电沉积的谷物线锯(外径:约0.257mm,磨粒的粒径:约40μm至约60μm)作为线锯进行。 4  在大约230 rn / sec的送丝速度和大约150 mm / min的切割速度的条件下。 \n\n [0124] 此后,将切割的压块直接进行烧结,而无需进行将压块彼此分离的特殊处理。 评价了所得的烧结体(切割成形体)之间的熔合率和破裂的发生率。 评价结果示于下表3。 每个示例的样本数约为150。 \n\n [0125] 注意,烧结过程在惰性气体气氛(稀有气体和氮气)中或在真空下在约1000℃至约1100℃的温度下进行约1小时至约5小时。 根据需要,可以将所得的烧结体在约450℃至约800℃下进行例如约1小时至约8小时的时效处理。 为了减少烧结体中所含的碳的量以改善磁性,可以根据需要在烧结过程之前通过加热除去添加到合金粉末中的润滑剂和用于切削过程的切削液。 尽管这些条件取决于润滑剂和切削液的类型,但是在减压的气氛中在约100℃至约600℃的温度下进行约3小时至约6小时的去除润滑剂的加热。 在该优选实施方式中,加热在约500℃下进行约两个小时。 \n\n [0126] \n\n    表3  正常  切割液 切割 仅异链烷烃 异链烷烃+氧化钇  线 异链烷烃 没有 已应用 已应用  州 伊特里亚 没有 没有 已应用  切削负荷(gf) 8.3 28.8 31.5  定影率(%) 44.4 2.5 1.3  开裂率(%)  2.5 0.8 10.0 \n\n [0127] 从表3可以明显看出,通过使用线锯进行切割,熔合率大大降低。 4 与不使用切削液的普通切削相比,使用了切削液。 这表明通过施加切削液可以提高产量。 至于开裂率,没有观察到很大的差异,这可能是因为生坯的强度不会因施加切削液而降低。 \n\n [0128] 如表3所示,与普通切削相比,切削液的切削增加切削负荷。 这可能是因为锯屑颗粒附着在线锯的表面上 4  施加有切削液并通过线锯将其带离切削部分 4  作为线锯 4  旅行。 \n\n [0129] 尽管使用切削液会增加切削负荷,但约0.30 gf的负荷仍然很小。 因此,即使是如图3所示的异型生坯,也可以高收率地进行切割。 如图12所示,在与支撑基座接触的部分的面积较小,并且由于切削负荷而易于产生变形,碎裂和其他缺陷。 因此,由于可以以高成品率地切割形状接近最终烧结磁体的形状的生坯,因此可以省略后续的成形工序,或者可以缩短该工序所需的时间。 \n\n [0130] 线锯机 50  如图所示。 另外,图13所示的压粉机也可以用于减少切割时对生坯施加的负荷(耐摩擦性)。 \n\n [0131] 中线锯机 50 ,绿色紧凑 1  相对于线锯沿水平方向(图13中空心箭头所示)大致相对移动 4  大致沿垂直方向移动,从而使绿色压实 1  切割是在包括基本垂直方向的平面中形成切割表面的切割。 在这种情况下,生坯的面积 1  接触行进的钢丝锯 4  (切口部分的长度)小于使用线锯机的情况下的长度 40  如图所示。 12 。 因此,施加到生坯的负载 1  较小,因此切割表面更加光滑。 \n\n [0132] 线锯的行进方向 4  和生坯相对运动的方向 1  不限于图1和2中所示的那些。 压片的形状如图12和图13所示,但可以根据压粉坯的形状适当确定。 1  和其他合适的因素。 如上所述,在能够缩短切口部的长度的方向上进行切割是优选的,因为可以获得光滑的切割面。 \n\n [0133] 线锯机 50  包括线锯驱动部分和湿式集尘器 7  在箱子里 9 。 通过将线锯驱动部设置在如图所示的示例中的切割位置处,可以确保足够的空间用于切割过程以及与切割过程相关的过程(例如生坯的运输)。 1 )。 锯屑收集在收集液中 8  如图2所示,在湿式集尘器中,在集尘器中安装有吸尘器。 13 。 通过这种集尘,防止了工作环境的污染。 在这种情况下,最好用氮气代替大气 9 。 \n\n [0134] 在优选实施例3中,将切削液施加到线锯上 4  通过浸泡。 可替代地,可以使用滴,喷雾或它们的组合。 否则,生压坯可能会保留在切削液中并以浸没状态被切削。 然而,该方法在处理切削液和其他材料方面存在问题。 因此,为了用少量的切削液获得足够的效果,优选使用任何浸渍,滴落和喷涂方法。 通过浸渍,滴落或喷涂将切削液施加到线锯上,可以通过结构或装置比较容易地实现。 因此,这适用于线锯机 20  例如,在优选实施例2中(图10)。 \n\n [0135] 在上述优选实施方式中优选使用的R-Fe-B稀土磁体粉末可以通过以下工艺步骤来制备。 \n\n [0136] 首先,通过已知的带铸技术制备R-Fe-B稀土磁体合金的铸造薄片。 具体地,通过高频熔化工艺熔化具有期望组成的合金,从而获得合金的熔化物。 将熔融合金保持在约1350℃,然后通过单辊工艺快速淬火,以获得厚度为约0.3mm的合金的薄片状铸锭。 在辊的圆周表面速度为约1m /秒,冷却速度为约500℃/秒的条件下进行快速淬火处理。 过冷温度为200°C。 \n\n [0137] 以这种方式制备的快速凝固的合金的厚度在约0.03mm至约10mm的范围内。 合金包含R 2 Ť 14 B晶粒和富R相分散在R的晶界周围 2 Ť 14 B晶粒。  R的大小 2 Ť 14 B晶粒在短轴方向和长轴方向上分别为约0.1μm至约100μm和约5μm至约500μm。 富R相的厚度优选为约10μm或更小。 在美国专利No.5,828,641中公开了一种通过带铸技术制造材料合金的方法。 例如,美国专利号5,383,978。 美国专利No. 美国专利号5,383,978通过引用并入本文。 \n\n [0138] 接下来,将片状铸造合金锭填充到材料包中,然后将其装入机架。 此后,使用材料运输器将装有材料包的架子运输到氢炉的前部,然后引入到氢炉中。 将原料合金加热并在炉内进行氢粉碎过程。 以此方式粗粉碎的原料合金优选在合金的温度降低到大约室温之后卸载。 然而,即使在合金的温度仍然很高(例如,在约40℃至约80℃的范围内)时卸载材料合金,除非暴露出合金,否则合金也不会被如此严重地氧化。 空气。 作为该氢粉碎过程的结果,稀土合金被粗粉碎成约0.1mm至约1.0mm的尺寸。 如上所述,在进行该氢粉碎处理之前,优选将原料合金更粗地粉碎成平均粒径在约1mm至约10mm之间的薄片。 \n\n [0139] 在通过该氢粉碎工艺将原料合金粗粉碎之后,优选将脆化的合金更细地粉碎,并使用旋转式冷却器等冷却机进行冷却。 如果卸载的材料仍然具有相对较高的温度,则可以将材料冷却更长的时间。 \n\n [0140] 此后,将已经通过旋转冷却器冷却到大约室温的原料粉末进一步更细地粉碎以制成细粉。 在所示的优选实施例中,在氮气环境中使用喷射磨将材料粉末精细地粉碎,从而获得平均直径(FSSS粒径)为约3.0μm至约3.2μm的磁体粉末。 在该氮气环境中氧气的浓度应优选低至约10,000ppm。 例如,在日本专利公开第6-6728号中公开了用于这种方法的喷射磨。 更具体地,通过控制包含在细粉状磁铁粉末中的氧化性气体(氧气或水蒸气)的浓度,优选将其微粉化的磁铁粉末中所含的氧气的重量设为约6,000ppm以下,更优选设为约3000ppm以下。 用于精细粉碎过程的环境气体。 这是因为,如果稀土类磁铁粉末中所含的氧的重量超过约6,000ppm,则所得到的烧结磁铁中的非磁性氧化物的合计含量通常过高而无法获得优异的磁特性。 \n\n [0141] 随后,在摇摆混合器中将润滑剂(例如,以约0.3质量%)添加到该磁体粉末中并与之混合,从而用润滑剂覆盖磁体粉末颗粒的表面。 作为润滑剂,可以使用用石油溶剂稀释的脂肪族酯。 在所示的实例中,己酸甲酯用作脂族酯,异链烷烃用作石油溶剂。 己酸甲酯和异链烷烃可以例如以约1:9的重量比混合。 像这样的切削液将不仅通过覆盖粉末颗粒的表面来防止粉末颗粒的氧化,而且还将通过在压制过程中使压坯的密度均匀来消除生坯的无序取向。 \n\n [0142] 应当注意,润滑剂不限于示例类型。 例如,作为脂肪族酯的己酸甲酯可以用辛酸甲酯,月桂酸甲酯或月桂酸甲酯代替。 可用溶剂的实例包括石油溶剂,例如异链烷烃和环烷溶剂。 可以在任意时间添加润滑剂,包括在精细粉碎之前,之中或之后。 代替切削液或除切削液之外,还可以使用诸如硬脂酸锌的固体(干)润滑剂。 \n\n [0143] 通过使用已知的压力机在大致平行于或基本上垂直于压力方向施加的对准磁场下以约0.5MA / m至约1.5MA / m的范围压实磁体粉末。 \n\n [0144] 易氧化且难以机械加工的R-Fe-B型烧结磁体被用于本发明的描述。 本发明还适用于由其他材料制成的稀土烧结磁体和其他烧结磁体。 \n\n [0145] 在以上描述中,切割了压坯。 本发明还适用于生坯的轮廓加工,其中,生坯在NC控制下相对于线锯相对地以二维或三维运动的同时被加工。 通过该机械加工,可以将生坯切割成弓形和桶形等任意形状。 \n\n [0146] 根据本发明的优选实施例,在烧结之前用较窄的线锯加工较软的生坯。 这减少了加工负荷,并使生坯中的热量最小化。 因此,即使在由易氧化的磁体粉末制造磁体的情况下,也可以显着缩短加工所需的时间,并且可以在不降低最终磁性能的情况下极大地降低生产成本。 另外,与使用常规旋转刀片的情况相比,可以减小切割间隙。 这提高了材料的产量。 \n\n [0147] 应当理解,以上描述仅是对本发明的说明。 在不脱离本发明的情况下,本领域技术人员可以设计出各种替代和修改。 因此,本发明旨在涵盖落入所附权利要求书范围内的所有这样的替代,修改和变化。');
INSERT INTO `os_patent_instruction_text` VALUES (12942, 22771, '[0001] Die vorliegende Erfindung bezieht sich auf ein Verfahren zur Herstellung eines Sintermagneten.\n\nTechnischer Hintergrund\n\n\n\n[0002] Ein Seltenerdmetall-Sintermagnet wird hergestellt durch Pulverisieren einer Seltenerdmetall-Magnetlegierung (Ausgangslegierung) zueinem Legierungspulver, Pressen (Verdichten) des Legierungspulvers zur Herstellung eines Vorpresslings (Grünlings), Sintern des Vorpresslingsund Durchführung einer Alterungsbehandlung mit dem Sinterkörper, maschinelle Bearbeitung und andere derartige Verfahren. Derzeit werden aufverschiedenen Anwendungsgebieten in großem Umfang als Seltenerdmetall-Sintermagnete zwei Magnet-Typen verwendet, nämlich Magnete vomSeltenerdmetall-Kobalt-Typ und Magnete vom Seltenerdmetall-Eisen-Bor-Typ. Unter anderem werden Magnete vom Seltenerdmetall-Eisen-Bor-Typ\n\n\n\n(nachstehend als \"Magnete vom \"R-Fe-B-Typ\" bezeichnet, worin R für mindestens einen Element-Typ, ausgewählt aus der Gruppe, die besteht ausElementen der Seltenen Erden und Yttrium, Fe für Eisen und B für Bor stehen) immer häufiger in verschiedenen Typen von elektronischen Gerätenverwendet, weil die Magnete vom R-Fe-B-Typ ein magnetisches Energieprodukt aufweisen, das höher ist als bei verschiedenen anderen Magnet-Typenund diese dennoch verhältnismäßig billig sind. Ein Teil des Fe kann durch ein Übergangsmetall-Element, wie z.B. Co, ersetzt sein. Außerdem kann biszu der Hälfte des Bors durch Kohlenstoff ersetzt sein.\n\n\n\n[0003] Zur Herstellung eines Sintermagneten mit der gewünschten Gestalt wird zuerst ein Seltenerdmetall-Magnetpulver vom R-Fe-B-Typ (d.h. einSeltenerdmetall-Legierungspulver) mit einer Presse verdichtet zur Herstellung eines Vorpresslings (Grünlings), der eine Größe hat, die größer ist alsdiejenige des fertigen Magnetprodukts. Der Vorpressling wird gesintert und der resultierende Sinterkörper wird geschliffen oder zerschnitten mit einemSinterhartmetall-Sägeblatt, einem rotierenden Schleifstein oder dgl., um dem Sinterkörper die gewünschte Gestalt zu geben. Beispielsweise wird einSinterkörper zuerst in Form eines Blockes hergestellt und der Block wird dann mit einem Sägeblatt oder dgl. zerschnitten zur Herstellung einer Vielzahlvon Sinterplatten.\n\n\n\n[0004] Ein Sinterkörper aus einem Seltenerdmetall-Legierungsmagneten z.B. einem Magneten vom R-Fe-B-Typ ist sehr steif und spröde und führt zueiner hohen maschinellen Bearbeitungsbelastung. Deshalb ist das Präzisionsschleifen eines solchen Sinterkörpers mit einer harten Arbeit verbundenund dauert lang. Aus diesem Grund ist das Bearbeitungsverfahren eine Hauptursache für den Anstieg der Produktionskosten und der Produktionszeit.Aufgabe der Frfindung ist die Behebung dieses Problems.\n\n\n\n[0005] Um das oben genannte Problem zu lösen, wurde beispielsweise in JP 08181028 A und JP 08064451 A das Schleifen eines Vorpresslings vordem Sintern vorgeschlagen.\n\n\n\n[0006] In der JP 08064451 A ist ein Verfahren zum Abfasen (Abschrägen) eines Vorpresslings für einen gekrümmten Ferritmagneten mit einemrotierenden Schleifstein oder einer rotierenden Bürste beschrieben. Wenn dieses Verfahren auf einen Vorpressling für einen Magneten vom R-Fe-B-Typ angewendet wird, der leicht einer Oxidation unterliegt, kann das folgende Problem auftreten. Zwischen einem Schleifstein oder einer rotierendenBürste und dem Vorpressling entsteht Reibungswärme und dies kann zu einer schnellen Reaktion eines Seltenerdmetallelements und von Eisen in demVorpressling mit Sauerstoff und Wasser in der Atmosphäre führen. Als Folge davon kann im schlimmsten Fall möglicherweise eine Entzündung desVorpresslings auftreten. Selbst wenn der schlimmste Fall vermieden wird, werden die magnetischen Eigenschaften des Magneten beeinträchtigt.\n\n\n\n[0007] In der JP 08181028 A ist ein Verfahren beschrieben, bei dem die Oxidation eines Vorpresslings während der maschinellen Bearbeitungdesselben verhindert wird, in dem der Vorpressling in Mineralöl, synthetisches Öl oder Pflanzenöl eingetaucht und im eingetauchten Zustand mit einerrotierenden Klinge zerschnitten wird.\n\n\n\n[0008] Bei diesem Verfahren ist es unerlässlich, eine Verfahrensstufe zur Entfernung des Mineralöls oder anderer Substanzen von dem Vorpresslingnach dem Zerschneiden und vor dem Sintern desselben durchzuführen. Wenn die Entfettung unzureichend ist, wirkt der in dem Öl enthalteneKohlenstoff als Verunreinigung in dem Sinterverfahren und dadurch werden die magnetischen Eigenschaften beeinträchtigt.\n\n\n\n[0009] Außerdem ist zum Schneiden mit einem Sägeblatt oder dgl. ein großer Schneide-Zwischenraum in dem Vorpressling erforderlich, wodurch dieMaterialausbeute herabgesetzt wird.\n\n\n\n[0010] Ferner, sind aus der DE 100 45 770 A1, der EP 0 983 831 A2 und der DE 101 57 433 A1 Verfahren bekannt, bei welchen Drahtsägen an fertiggesinterten Magneten angewandt werden.\n\n\n\n[0011] Aus der JP 611 25 114 A und der DE 42 06 007 A1 ist außerdem die Anwendung von Sinter-Trennmitteln bekannt.\n\nBeschreibung der Erfindung\n\n\n\n[0012] Um die vorstehend beschriebenen Probleme zu überwinden, betrifft die vorliegende Erfindung gemäß bevorzugten Ausführungsformen einVerfahren zur Herstellung eines Sintermagneten, bei dem die maschinelle Bearbeitungsbelastung stark vermindert ist und die Wärmebildung in demVorpressling minimiert ist.\n\n\n\n[0013] Das Verfahren zur Herstellung eines Sintermagneten gemäß bevorzugten Ausführungsformen der vorliegenden Erfindung umfasst die StufenHerstellung eines Vorpresslings (Grünlings) aus einem Pulver für den Sintermagneten, maschinelle Bearbeitung des Vorpresslings mit einer Drahtsägeund Sintern des Vorpresslings.\n\n\n\n[0014] Bei einer spezifischen bevorzugten Ausführungsform der Erfindung umfasst die Drahtsäge einen Draht mit einem Außendurchmesser in einemBereich von etwa 0,05 bis etwa 3,0 mm und Schleifkörner, die an dem Draht befestigt sind.\n\n\n\n[0015] Bei einer anderen bevorzugten Ausführungsform der vorliegenden Erfindung umfasst die Stufe der maschinellen Bearbeitung desVorpresslings das Zerschneiden des Vorpresslings zu einer Vielzahl von Teilen.\n\n\n\n[0016] Die Stufe der maschinellen Bearbeitung des Vorpresslings umfasst vorzugsweise das Zerschneiden des Vorpresslings bei gleichzeitigerBildung von Schnittoberflächen durch relatives Bewegen des Vorpresslings gegenüber der Drahtsäge und relatives Bewegen der Drahtsäge entlang derSchnittoberflächen.\n\n\n\n[0017] Vorzugsweise erfolgt die relative Bewegung in der Stufe der maschinellen Bearbeitung des Vorpresslings in einer horizontalen Ebene unddas Verfahren kann ferner umfassen die Trennung der Vielzahl von Teilen, die in der Stufe Vorzugsweise umfasst das Verfahren ferner eine Stufezum Aufbringen eines Antifusionspulvers auf einen Zwischenraum zwischen der Vielzahl von Teilen nach der Stufe der maschinellen Bearbeitung desVorpresslings.\n\n\n\n[0018] Bei einer bevorzugten Ausführungsform der Erfindung wird die Stufe der maschinellen Bearbeitung des Vorpresslings in einerInertgasatmosphäre mit einer Sauerstoff-Konzentration in einem Bereich von etwa 5 bis etwa 18 % Mol-verhältnis durchgeführt.\n\n\n\n[0019] Bei einer anderen bevorzugten Ausführungsform der vorliegenden Erfindung wird die maschinelle Bearbeitung des Vorpresslings mit einerSchneidflüssigkeit (oder einem flüssigen Schmiermittel) durchgeführt, die auf mindestens einen Teil der Drahtsäge aufgebracht wird, der mit demVorpressling in Kontakt kommt.\n\n\n\n[0020] Die Schneidflüssigkeit umfasst vorzugsweise ein organisches Lösungsmittel auf Kohlenwasserstoffbasis. Das Lösungsmittel aufKohlenwasserstoffbasis umfasst vorzugsweise Isoparaffin.\n\n\n\n[0021] Die Schneidflüssigkeit ist eine Dispersion, die vorzugsweise ein Antifusionspulver enthält. Vorzugsweise wird die Schneidflüssigkeit durchEintauchen, Auftropfen oder Aufsprühen oder unter Anwendung irgendeines anderen geeigneten Verfahrens auf die Drahtsäge aufgebracht.\n\n\n\n[0022] Der Vorpressling kann in der Schneidflüssigkeit maschinell bearbeitet werden.\n\n\n\n[0023] Bei einer bevorzugten Ausführungsform der vorliegenden Erfindung umfasst die Stufe der Herstellung eines Vorpresslings die Stufe derZugabe eines Schmiermittels zu dem Pulver für den Sintermagneten.\n\n\n\n[0024] Bei einer anderen bevorzugten Ausführungsform der vorliegenden Erfindung weist das Pulver für den Sintermagneten eine\n\nRestmagnetisierung in einem Bereich von etwa 0,001 bis etwa 0,1 T auf.\n\n\n\n[0025] Bei noch einer anderen bevorzugten Ausführungsform der vorliegenden Erfindung ist das Pulver für den Sintermagneten ein Pulver auseiner Seltenerdmetall-Legierung vom R-T-B-Typ (worin R steht für mindestens einen Element-Typ, ausgewählt wird aus der Gruppe, die besteht ausSeltenerdmetallen und Yttrium, T steht für ein Übergangsmetall einschließlich Eisen und B steht für Bor). Die durchschnittliche Teilchengröße (FSSS-Teilchengröße) des Pulvers für den Sintermagneten liegt vorzugsweise in dem Bereich von etwa 2,0 bis etwa 8,0 &mgr;m.\n\n\n\n[0026] Weitere Merkmale, Elemente, Charakteristika, Stufen und Vorteile der vorliegenden Erfindung gehen aus der nachfolgenden detailliertenBeschreibung bevorzugter Ausführungsformen unter Bezugnahme auf die beiliegenden Zeichnungen hervor.\n\nKurze Beschreibung der Zeichnungen\n\n\n\n[0027] Fig. 1 erläutert einen beispielhaften Aufbau einer Drahtsäge-Vorrichtung, die zweckmäßig für bevorzugte Ausführungsformen dervorliegenden Erfindung verwendet wird;\n\n\n\n[0028] Fig. 2 stellt ein Fließdiagramm dar, in dem die Unterschiede zwischen dem Zerschneiden eines Vorpresslings vor dem Sintern gemäßbevorzugten Ausführungsformen der vorliegenden Erfindung und dem konventionellen Zerschneiden eines Sinterkörpers im Hinblick auf die Anzahl derHerstellungsstufen dargestellt sind;\n\n\n\n[0029] Fig. 3 zeigt eine perspektivische Ansicht, die in schematischer Form eine in einem Beispiel von bevorzugten Ausführungsformen derErfindung verwendete Drahtsäge erläutert;\n\n\n\n[0030] Fig. 4 stellt ein Diagramm dar, das die Abhängigkeit der Pressdichte von der Bearbeitungsbelastung erläutert, die festzustellen ist, wenn eineSchneidflüssigkeit dem Pulver für den Sintermagneten zugesetzt wird;\n\n\n\n[0031] Fig. 5 stellt ein Diagramm dar, das die Abhängigkeit der Draht-Zuführungsgeschwindigkeit von der Bearbeitungsbelastung erläutert, diefestzustellen ist, wenn ein Schmiermittel zugegeben wird;\n\n\n\n[0032] Fig. 6 stellt ein Diagramm dar, das die Abhängigkeit der Schnittgeschwindigkeit von der Bearbeitungsbelastung erläutert, die festzustellen ist,wenn ein Schmiermittel zugegeben wird;\n\n\n\n[0033] Fig. 7A stellt ein Diagramm dar, das die Beziehung zwischen der Profil-Unregelmäßigkeit (Wellenbildung) einer Schnittoberfläche nach demSintern und der Pressdichte erläutert;\n\n\n\n[0034] Fig. 7B erläutert in Form einer perspektivischen Ansicht einen Wellenmessbereich (etwa 32 mm) auf der Schnittoberfläche gemäß Fig. 7A;\n\n\n\n[0035] Fig. 7C stellt ein Diagramm dar, das die Messdaten (Stufendaten) der Welle gemäß Fig. 7A erläutert;\n\n\n\n[0036] Fig. 8 erläutert eine bevorzugte Art der Sinterung eines Vorpresslings, der mit einer Drahtsäge gemäß bevorzugten Ausführungsformen dervorliegenden Erfindung zerschnitten worden ist;\n\n\n\n[0037] Fig. 9 stellt eine schematische Darstellung dar, die das Presslingsbearbeitungssystem einschließlich einer Drahtsäge-Vorrichtung erläutert,die zweckmäßig für bevorzugte Ausführungsformen der Erfindung verwendet wird;\n\n\n\n[0038] Fig. 10 zeigt in schematischer Darstellung eine weitere Drahtsäge-Vorrichtung, die für die Verwendung in bevorzugten Ausführungsformender vorliegenden Erfindung geeignet ist;\n\n\n\n[0039] Fig. 11 zeigt eine schematische Ansicht einer Presslings-Halteeinrichtung der Drahtsäge-Vorrichtung in Form einer explodiertenperspektivischen Darstellung;\n\n\n\n[0040] Fig. 12 stellt eine schematische Erläuterung einer Drahtsäge-Vorrichtung 40  dar, die zweckmäßig in der bevorzugten Ausführungsform 3 dervorliegenden Erfindung verwendet wird; und\n\n\n\n[0041] Fig. 13 stellt eine schematische Darstellung einer Drahtsäge-Vorrichtung 50  dar, die zweckmäßig in der bevorzugten Ausführungsform 3 dervorliegenden Erfindung verwendet wird.\n\nBeste Art der Durchführung der Erfindung\n\n\n\n[0042] Erfindungsgemäß wird ein Vorpressling aus einem Pulver für einen Sintermagneten maschinell bearbeitet durch Behandlung mit einerDrahtsäge vor dem Sintern. Das Sägen mit einer Drahtsäge ist ein Verfahren der maschinellen Bearbeitung eines Vorpresslings, bei dem ein in einerRichtung oder in zwei entgegengesetzen Richtungen laufender Draht gegen den zu bearbeitenden Vorpressling gepresst wird, sodass der Vorpresslingmit den Schleifmittelkörnern, die zwischen dem Draht und dem Vorpressling vorliegen, bearbeitet wird.\n\n\n\n[0043] Die Erfinder der vorliegenden Erfindung haben gefunden, dass bei der maschinellen Bearbeitung eines Vorpresslings aus einemSeltenerdmetall-Legierungspulver, das vor dem Sintern einer Oxidation unterliegen kann, das Problem der Entstehung von Wärme und eineEntzündung, die auftreten können, wenn ein normales rotierende Sägeblatt oder ein anderes derartiges Werkzeug verwendet wird, vermieden werdenkann durch Verwendung des oben genannten Drahtes. Die vorliegende Erfindung wurde auf der Basis dieser und anderer Erkenntnisse entwickelt.\n\n\n\n[0044] Bei einer bevorzugten Ausführungsform der vorliegenden Erfindung wird ein Draht mit Schleifkörnern, die an der Oberfläche desselbenfixiert sind, bevorzugt verwendet. Der Kerndraht besteht vorzugsweise aus einem Material mit einer hohen Zugfestigkeit. Beispielsweise kann derKerndraht hergestellt sein aus einem kaltgezogenen Metalldraht (Pianodraht), einer Legierung, wie z.B. Ni-Cr und Fe-Ni, einem Metall mit einemhohen Schmelzpunkt, wie z.B. W und Mo, oder einem Bündel von Nylonfasern. Wenn der Draht übermäßig dick ist, ist der Schneide-Zwischenraum(Schneidespalt) groß und dadurch wird die Materialausbeute vermindert. Wenn dagegen der Draht übermäßig dünn ist, kann der Draht als Folge derBelastung bei der Bearbeitung brechen. Darüber hinaus nimmt der Schneidewiderstand zu und dies kann zur Entstehung von Wärme und zu einerEntzündung führen. Unter Berücksichtigung der vorstehenden Angaben liegt der Außendurchmesser des bei bevorzugten Ausführungsformen derErfindung verwendeten Drahtes vorzugsweise in dem Bereich von etwa 0,05 bis etwa 3,0 mm, insbesondere in dem Bereich von etwa 0,1 bis etwa 1,0mm. Die hier verwendete Drahtsäge umfasst allgemein ein Schneideelement mit einer Breite in der Schneiderichtung von etwa 3,0 mm oder weniger,wie z.B. eine Bandsäge mit einer Breite (oder Höhe) von etwa 3,0 mm oder weniger.\n\n\n\n[0045] Die Schleifkörner bestehen vorzugsweise aus einem Material mit einer hohen Härte, beispielsweise Diamant, SiC und Aluminiumoxid. DieTeilchengröße liegt in der Regel in dem Bereich von etwa 10 bis etwa 1000 &mgr;m. Die Schleifkörner sind vorzugsweise an der Oberfläche desKerndrahtes befestigt mittels einer Bindungsschicht, beispielsweise einer Harzschicht. Als Harzschicht kann ein Phenolharz, ein Epoxyharz oder einPolyimidharz verwendet werden. Die Dicke der Harzschicht beträgt vorzugsweise etwa 0,02 bis etwa 1,0 mm.\n\n\n\n[0046] Als Bindungsschicht kann auch eine Metallschicht anstelle der Harzschicht zum Fixieren der Schleifkörner verwendet werden. So istbeispielsweise ein Draht mit Schleifkörnern, die durch Elektroabscheidung oder Elektroplattierung (nachstehend auch als \"Draht mit elektrischabgeschiedenen Körnern\" bezeichnet) daran befestigt worden sind, bevorzugt wegen seines ausgezeichneten Austragsvermögens für den Sägestaub(Pulver oder Schlamm). Das heißt, der herausragende Teil der Schleifkörner (die Höhe des Abschnitts der Schleifkörner, der aus der Oberflächeder Bindungsschicht herausragt) kann größer gemacht werden, wenn ein Draht mit elektrisch abgeschiedenen Körnern verwendet wird als wenn einDraht mit Schleifkörnern verwendet wird, die mittels einer Harzschicht daran befestigt worden sind. Wenn eine ausreichende Festigkeit gewährleistetist, kann ein Draht verwendet werden, der aus mehreren Teildrähten besteht. Durch die Verwendung eines mehrdrahtigen Drahtes kann derAustragswirkungsgrad für den Sägestaub (Die Sägespäne) noch weiter verbessert werden. Im Falle der Verwendung einer Schneidflüssigkeit zurVerbesserung des Austragswirkungsgrades für den Sägestaub, wie weiter unten beschrieben, sollte vom Standpunkt der Beständigkeit gegen dieSchneidflüssigkeit aus betrachtet zusätzlich zu dem vorstehend beschriebenen ausgezeichneten Austragswirkungsgrad ein Draht mit elektrischabgeschiedenen Körnern bevorzugt verwendet werden.\n\n\n\n[0047] Die durchschnittliche Teilchengröße D der Schleifkörner genügt vorzugsweise der Beziehung 30 &mgr;m # D # 1000 &mgr;m.Insbesondere genügt sie vorzugsweise der Beziehung 40 &mgr;m # D # 200 &mgr;m. Vom Standpunkt des Schneide-Wirkungsgrades und desAustragswirkungsgrades für den Sägestaub aus betrachtet sollte der durchschnittliche Abstand zwischen benachbarten Schleifkörnern in derLaufrichtung der Drahsäge vorzugsweise in dem Bereich von etwa 200 bis etwa 600 % der durchschnittlichen Teilchengröße D liegen und dieherausragende Höhe sollte vorzugsweise in dem Bereich von etwa 15 bis etwa 500 &mgr;m liegen.\n\n\n\n[0048] Der Vorpressling (Grünling) wird magnetisiert durch ein ausrichtendes Magnetfeld, das während des Pressens (Verdichtens) angelegt wird.Selbst wenn für den Vorpressling (Grünling) eine Demagnetisierung\n\ndurchgeführt wird, um eine Magnetisierung zu entfernen, verbleibt eine remanente Magnetisierung von etwa 0,001 bis etwa 0,1 T. Obgleich eineweitere Verringerung der remanenten Magnetisierung möglich ist, wird dadurch die Anzahl der Behandlungsstufen erhöht und dies ist somit bei derMassenproduktion unerwünscht. Wegen der remanenten Magnetisierung des Vorpresslings (Grünlings) haftet dann, wenn der Schneidezwischenraumwährend des Schneidens des Vorpresslings (Grünlings) mit einer Drahtsäge eng ist, der Sägestaub an der Schnittoberfläche und dadurch wirddie Trennung der abgeschnittenen Stücke des Vorpresslings (Grünlings) voneinander erschwert. Um dieses Problem zu vermeiden, beträgt derSchneidezwischenraum vorzugsweise etwa 0,1 mm oder mehr.\n\n\n\n[0049] Es kann auch ein Draht ohne an der Oberfläche desselben fixierte Schleifkörner (ein von Schleifkörnern freier Draht) verwendet werden. BeiVerwendung dieses Draht-Typs wird jedoch der Sägestaub weniger leicht ausgetragen und setzt sich verhältnismäßig leicht in einer Schnittrille ab alsbei Verwendung eines Drahtes, der Schleifkörner aufweist, die an der Oberfläche desselben fixiert sind (Draht mit fixierten Körnern). Als Folge davonkann eine größere Menge Sägestaub an der Schnittfläche haften wegen der vorstehend beschriebenen remanenten Magnetisierung. Aus diesem Grundist die Verwendung eines Drahtes mit daran fixierten Schleifkörnern bevorzugt, bei der die Trennung der zerschnittenen Stücke des Vorpresslings(Grünlings) leichter ist.\n\n\n\n[0050] Während des Zerschneidens des Vorpresslings (Grünlings) in eine Vielzahl von Stücken kann die Drahtsäge erneut verhältnismäßig leichtentlang der einmal gebildeten Schnittfläche bewegt werden, wodurch die Trennung der abgeschnittenen Stücke erleichtert wird. Durch dieses erneuteDurchlaufenlassen der Drahtsäge entlang der Schnittfläche kann der Sägestaub, der in dem Zwischenraum zwischen den abgeschnittenen Stücken desVorpresslings zurückbleibt, ausgetragen werden, und auf diese Weise können die zerschnittenen Stücke voneinander getrennt werden, ohne dass einAbsplittern auftritt. Vorzugsweise wird der Zwischenraum zwischen den abgeschnittenen Stücken des Vorpresslings aufrechterhalten, um die Drahtsägeentlang der Schnittoberfläche erneut laufen zu lassen.\n\n\n\n[0051] Um den Austragswirkungsgrad für den Sägestaub während des Schneideverfahrens zu verbessern, kann der Vorpressling (Grünling) mit einerSchneidflüssigkeit geschnitten werden, die mindestens auf einen Teil der Drahtsäge aufgebracht wird, der mit dem Vorpressling in Kontakt kommt.Durch Aufbringen einer Schneidflüssigkeit auf die Drahtsäge haftet der Sägestaub leichter an der Drahtsäge und außerdem haften die Staubteilchenleichter aneinander. Als Folge davon haftet eine größere Menge des Sägestaubs an der Drahtsäge und wird aus dem abgeschnittenen Abschnittausgetragen.\n\n\n\n[0052] Es bestand die Befürchtung, dass ein nicht gesinterter Pressling, der eine geringe mechanische Festigkeit aufweist, durch Verwendungeiner Schneidflüssigkeit leichter zerbricht. Bei Versuchen, die von den Erfindern der vorliegenden Erfindung durchgeführt wurden, wurde jedoch keineAbnahme der Ausbeute als Folge einer verminderten Festigkeit festgestellt, die durch die Verwendung einer Schneidflüssigkeit hervorgerufen seinkönnte. Dagegen wird der Austragswirkungsgrad von Sägestaub durch die Verwendung einer Schneidflüssigkeit verbessert und die abgeschnittenenTeile des Vorpresslings können mit hoher Wahrscheinlichkeit voneinander getrennt werden. Als Folge davon wird das Herstellungsverfahren starkvereinfacht und die Produktionsausbeute stark verbessert.\n\n\n\n[0053] So wird beispielsweise beim Schneiden eines Vorpresslings in Form eines Bogens, bei dem die oberen und unteren Oberflächenunterschiedliche Krümmungen haben, der Vorpressling so geschnitten, dass Schnittflächen in der Ebene entstehen, einschließlich derjenigen inim Wesentlichen senkrechter Richtung, wenn der Vorpressling auf eine Trägerunterlage gelegt wird (vertikales Schneiden). Die abgeschnittenenStücke des Vorpresslings können so wie sie erhalten werden gesintert werden, ohne dass ein Verfahren zur Trennung der abgeschnittenen Stückevoneinander durchgeführt wird. Selbst bei diesem direkten Sintern ist das Auftreten einer Verschmelzung (Fusion) der Presslingsstücke aneinandergering. Deshalb ist eine ausreichende Produktionsausbeute gewährleistet.\n\n\n\n[0054] Als Schneidflüssigkeit wird vorzugsweise eine nicht-wässrige Schneidflüssigkeit (eine Flüssigkeit auf Basis eines organischen Lösungsmittelsoder eines Öls) verwendet, um eine Oxidation des Vorpresslings zu verhindern. Eine bevorzugte Schneidflüssigkeit ist ein organisches Lösungsmittelauf Basis eines Kohlenwasserstoffs, das nicht in dem Sintermagneten als Kohlenstoff zurückbleiben kann. Bevorzugt ist insbesondere ein Lösungsmittelauf Basis eines gesättigten Kohlenwasserstoffs (wie z.B. Isoparaffin und n-Paraffin), weil dieser Lösungsmittel-Typ leich entfernbar ist. Darüber hinauskann eine Dispersion mit einem in der Schneidflüssigkeit dispergierten Antifusionspulver verwendet werden, um eine noch wirksamere Verhinderungder Fusion (des Verschweißens) zwischen den Presslingsstücken nach dem Schneiden zu gewährleisten.\n\n\n\n[0055] Die Schneidflüssigkeit kann durch Eintauchen, Auftropfen oder Aufsprühen oder nach irgendeinem anderen Verfahren auf die Drahtsägeaufgebracht werden. Im übrigen kann der Vorpressling auch in die Schneidflüssigkeit eingetaucht und im eingetauchten Zustand zerschnitten werden.\n\n\n\n[0056] Nachstehend werden verschiedene bevorzugte Ausführungsformen der vorliegenden Erfindung unter Bezugnahme auf die relevantenZeichnungen beschrieben.\n\n\n\n[0057] Fig. 1 erläutert einen beispielhaften Aufbau einer Drahtsäge-Vorrichtung gemäß einer bevorzugten Ausführungsform 1 der vorliegendenErfindung. Die erläuterte Vorrichtung umfasst eine Antriebseinrichtung 2  , die einen Vorpressling 1  trägt, der bearbeitet werden soll, für das Antreibenin Aufwärtsrichtung und in Abwärtsrichtung (in Richtung der z-Achse) sowie eine Vielzahl von Walzen 3a  , 3b  , 3c  und 3d  .\n\n\n\n[0058] Eine Drahtsäge 4  , die einen Draht und Schleifkörner umfasst, die wie vorstehend angegeben an dem Draht fixiert sind, wird in Linienum die Walzen 3a  bis 3d  herumgewickelt und läuft in der Richtung, die im Wesentlichen parallel zur y-Achse ist. Die Linien der Drahtsäge 4  sindvorzugsweise in im Wesentlichen gleichen Abständen in Richtung der x-Achse angeordnet und der Abstand der Anordnung (der Drahtabstand) wirdwillkürlich festgelegt in Abhängigkeit von der Größe (Dicke) der Platten, die von dem Vorpressling (Grünling) 1  in Form eines Blockes abgeschnittenwerden. Bei einer bevorzugten Ausführungsform der vorliegenden Erfindung beträgt der Drahtabstand vorzugsweise etwa 1 bis etwa 30 mm.\n\n\n\n[0059] Der Außendurchmesser des für die Drahtsäge 4  verwendeten Drahtes liegt vorzugsweise in dem Bereich von etwa 0,05 bis etwa 3,0 mmunter Berücksichtigung der Drahtfestigkeit und des Schneide-Zwischenraums (Schneide-Spalts). Wenn ein starrer Sinterkörper mit der Drahtsäge4  zerschnitten wird, wirkt eine Kraft (Spannung) von bis zu etwa 20 bis etwa 40 N auf den Draht ein. Bei bevorzugten Ausführungsformen dervorliegenden Erfindung, bei denen jedoch der weiche Vorpressling 1  vor dem Sintern maschinell bearbeitet wird, wird eine verhältnismäßig geringeSpannung (Kraft) von etwa 0,1 bis etwa 10 N an den Draht angelegt und somit ist der Schneidewiderstand gering. Der Vorpressling kann daherzerschnitten und maschinell bearbeitet werden, ohne dass ein Problem in bezug auf eine Entzündung und eine Oxidation auftritt, selbst in einerAtmosphäre, die eine verhältnismäßig hohe Sauerstoff-Konzentration aufweist.\n\n\n\n[0060] Auf die Drahtsäge 4  kann als Schneidflüssigkeit während der maschinellen Bearbeitung ein organisches Lösungsmittel, wie z.B. Isoparaffinund Ethylalkohol, aufgebracht werden. Das Aufbringen der Schneidflüssigkeit ist nicht erforderlich, kann jedoch den Austragswirkungsgrad vonSägestaub, wie weiter unten beschrieben, verbessern.\n\n\n\n[0061] Die Geschwindigkeit (Vy) der Drahtsäge 4  in Richtung der y-Achse wird hier als \"Draht-Zuführungsgeschwindigkeit\" bezeichnet. DerVorpressling (Grünling) 1  wird gegen die Drahtsäge 4  gepresst, die mit einer vorher festgelegten Drahtzuführungsgeschwindigkeit läuft, um in eineVielzahl von Stücken zerschnitten/zerteilt zu werden. Die Geschwindigkeit (Vz) bei der der Vorpressling 1  gegen die Drahtsäge 4  gepresst wird, die derAntriebsgeschwindigkeit der Antriebseinrichtungen in Richtung der z-Achse in dem erläuterten Beispiel entspricht, wird hier als \"Schnittgeschwindigkeit\"bezeichnet. Je höher die Schnittgeschwindigkeit ist, umso kürzer ist die zum maschinellen Bearbeiten erforderliche Zeit.\n\n\n\n[0062] Die Drahtzuführungsgeschwindigkeit und die Schnittgeschwindigkeit werden in großem Umfang beeinflusst durch den Wert derBearbeitungsbelastung, wie aus den weiter unten beschriebenen Beispielen hervorgeht. Um die Bearbeitungsbelastung in einen für die Praxisgeeigneten Bereich zu bringen, liegt die Schnittgeschwindigkeit vorzugsweise in dem Bereich von etwa 30 bis etwa 1200 mm/min, besonders bevorzugtvon etwa 30 bis etwa 800 mm/min.\n\n\n\n[0063] Die Drahtsäge 4  kann in einer festgelegten Richtung laufen oder sie kann in Richtung der y-Achse sich hin- und herbewegen. Im zuletztgenannten Fall kann eine Vielzahl von Drähten, die über einen im Wesentlichen rechteckigen Rahmen gespannt sind, in Richtung der y-Achse linearhin- und herbewegt werden mit einem Luftzylinder oder einer anderen geeigneten Einrichtung. Anstelle des Luftzylinders kann eine Einrichtungverwendet werden, die einen Motor und eine Kurbel umfasst.\n\n\n\n[0064] Die Fig. 2 zeigt in Form eines Fließdiagramms die Unterschiede zwischen dem Schneiden eines Vorpresslings vor dem Sintern gemäßbevorzugten Ausführungsformen der vorliegenden Erfindung und dem konventionellen Schneiden eines Sinterkörpers in bezug auf die Anzahl derBearbeitungsstufen. Wie in der Fig. 2 dargestellt, ist es bei einem konventionellen Verfahren erforderlich, die Stufen durchzuführen: Herstellung desAusgangsmaterial-Pulvers, Verdichten (Pressen) des Pulvers, Sintern eines Vorpresslings, Zerschneiden ei\n\nnes Sinterkörpers und Durchführung einer Oberflächenbehandlung mit den abgeschnittenen Stücken des Sinterkörpers und weitere Stufen. In demVerfahren gemäß bevorzugten Ausführungsformen der vorliegenden Erfindung wird der Vorpressling nach dem Pressen (Verdichten) zerschnitten,bevor er gesintert wird, zur Herstellung von Presslingsstücken mit einer Gestalt und Größe, die nahe bei denjenigen der fertigen Magnetprodukte liegen.Auf diese Weise wird bei den bevorzugten Ausführungsformen der Erfindung der Vorpressling (Grünling), der sehr weich ist und im Vergleich zu demSinterkörper leicht bearbeitet werden kann, zerschnitten. Dadurch wird die zum Zerschneiden erforderliche Zeit stark verkürzt.\n\n\n\n[0065] Bei bevorzugten Ausführungsformen der vorliegenden Erfindung ist die Kontaktfläche zwischen der Drahtsäge und dem Vorpressling kleinim Vergleich zu der Kontaktfläche einer konventionellen rotierenden Klinge mit dem Vorpressling, und deshalb ist die Menge der durch die Reibungerzeugten Wärme extrem gering. Beispielsweise beiträgt die Kontaktfläche bis zu etwa 1000 bis etwa 10 000 mm2 im Falle der Verwendung einerkonventionellen rotierenden Klinge und die Kontaktfläche ist vermindert auf etwa 5 bis etwa 50 mm2 bei den bevorzugten Ausführungsformen dervorliegenden Erfindung. Auf diese Weise werden die Probleme der Entzündung und einer Oxidation des Seltenerdmetall-Legierungspulvers zuverlässigauch dann verhindert, wenn die Bearbeitung mit einer Drahtsäge in einer normalen Atmosphäre durchgeführt wird.\n\n\n\n[0066] Es sei jedoch darauf hingewiesen, dass zur weiter Unterdrückung der Oxidation des Magnetpulvers und zur Erzielung guter\n\nMagneteigenschaften es bevorzugt ist, die Bearbeitung mit einer Drahtsäge in einer Inertgasatmosphäre mit einer Sauerstoff-Konzentration von etwa 10bis etwa 15 Mol-% durchzuführen, wenn die Sauerstoff-Konzentration des Magnetpulvers etwa 3000 Gew.-ppm übersteigt. Insbesondere dann, wennein Magnetpulver, das eine niedrige Sauerstoff-Konzentration von etwa 3000 Gew.-ppm oder weniger aufweist, zur Herstellung eines Vorpresslings(Grünlings) verwendet wird, weist das Magnetpulver eine signifikant hohe Oxidationsreaktionsfähigkeit auf. In diesem Fall wird deshalb die Bearbeitungmit der Drahtsäge zweckmäßig in einer Umgebung durchgeführt, in der die Sauerstoff-Konzentration strenger begrenzt ist als vorstehend beschrieben(z.B. in einer Inertgasatmosphäre mit einer Sauerstoff-Konzentration von etwa 2 Mol-% oder weniger). Die Kontrolle der Sauerstoff-Konzentration aufeinen Wert innerhalb des vorstehend angegebenen Bereiches ist möglich durch eine partielle Verkleidung der Vorrichtung zum Schneiden, die erreichtwird, ohne dass eine vollständige Isolierung der Verkleidung der Drahtsägen-Vorrichtung gegenüber der Atmosphäre erforderlich ist. Auf diese Weisewird dann, der Vorpressling in einer Gasatmosphäre zerschnitten wird, die Atmosphäre vorzugsweise kontrolliert (gesteuert).\n\n\n\n[0067] Außerdem wird dann, wenn ein Vorpressling in einer Gasatmosphäre wie vorstehend beschrieben maschinell bearbeitet wird, demMagnetpulver vor dem Verdichten (Pressen) vorzugsweise ein Feststoff oder eine Schneidflüssigkeit (z.B. ein Fettsäureester) zugesetzt. Mit einemFilm aus dem Schmiermittel auf der Oberfläche des Pulvers wird ein Oxidation des Pulvers verhindert. Alternativ kann nach der Herstellung einesVorpresslings der Vorpressling vor der maschinellen Bearbeitung mit dem Schmiermittel ausreichend imprägniert werden. Als ein solches Schmiermittelbevorzugt ist ein Schmiermittel, das von dem Vorpressling in dem Sinterverfahren in einer späteren Stufe leicht entfernt werden kann.\n\n\n\n[0068] Beim konventionellen Zerschneiden mit einer rotierenden Klinge ist der Schneide-Zwischenraum bzw. -spalt breit (beispielsweise etwa 0,5mm breit oder breiter) und dies führt zu Sägestaub (Sägespänen) der von dem abgeschnittenen Teil in einigen Fällen sich in der Umgebung in Formvon Sägespänen verteilt. Dies ist sehr gefährlich, wenn sich diese fliegenden Sägespänen entzünden. Durch die Verwendung der Drahtsäge gemäßbevorzugten Ausführungsformen der vorliegenden Erfindung wird das Umherfliegen von Sägestaub (Sägespänen) stark minimiert und eliminiert und aufdiese Weise eine sichere Bearbeitung gewährleistet.\n\n\n\n[0069] Die Behandlung mit einer Drahtsäge gemäß bevorzugten Ausführungsformen der vorliegenden Erfindung kann auch in einem organischenLösungsmittel, beispielsweise einem Lösungsmittel auf Basis eines gesättigten Kohlenwasserstoffs, dargestellt durch Isoparaffin, im untergetauchtenZustand durchgeführt werden. Die Entfernung eines solchen organischen Lösungsmittels ist leicht. Deshalb kann der Vorpressling in einem normalenSinterverfahren l', '烧结磁铁的制造方法本发明涉及烧结磁铁的制造方法。\n\n技术背景\n\n\n\n[0002]一种稀土类烧结磁体通过粉碎稀土类磁体合金（启动合金）向合金粉末，压制的合金粉末的（压实）用于制造成形体（生坯）中制备，烧结Vorpresslingsund进行时效处理，以烧结体，机械加工，和其它这样的流程。大规模目前aufverschiedenen应用被用作稀土烧结磁体，两个磁性类型，即磁铁vomSeltenerdmetall  - 钴型磁体，以及稀土 - 铁 - 硼型。其中，稀土 - 铁 - 硼型磁铁\n\n\n\n（以下简称R-Fe-B基型“的的磁铁””，其中R是选自稀土和钇的ausElementen的组中选择的至少一种类型的元素，铁铁，B是硼）总是在各种类型的使用，因为具有R-Fe-B型，其比各种其它磁Typenund的较高的磁能量积磁体电子装置的这些相对便宜共同爱好。Fe的一部分，由过渡金属元素例如Co，并且高达一半的硼可以被碳取代。\n\n[0003]为了生产具有所需形状的烧结磁体是稀土磁粉由具有尺寸较大的第一R-Fe-B型（即einSeltenerdmetall合金粉末）与压实用于制造压坯（生坯）的压是成品磁性产品的。将预制件烧结并用硬质合金锯片，旋转磨石等研磨或切割所得烧结体，以使烧结体具有所需形状。例如，首先以块的形式制备烧结体，然后用锯片等切割块以制造多个烧结板。\n\n\n\n一种稀土合金磁铁的烧结体，例如R-Fe-B型磁铁非常坚硬且易碎，导致高加工负荷。因此，这种烧结体的精密研磨与辛勤工作相关并且需要很长时间。因此，加工过程是生产成本和生产时间增加的主要原因，本发明的任务是解决这个问题。\n\n[0005]为了解决上述问题，迄今为止已提出了烧结例如，JP 08181028和JP 08064451 A切口绿色部分。\n\n\n\n[0006] JP 08064451描述了一种用于倒角（倒角）的压坯的用于与旋转磨石或旋转刷弯曲的铁氧体磁体的方法。当这个方法被应用到生坯为其容易经历氧化的R-Fe-B型磁体，可能会出现以下问题。磨石或旋转刷和生坯之间产生的摩擦热，这可能导致的稀土元素和铁的快速反应在与大气中的氧和水demVorpressling。结果，在最坏的情况下可能发生预压的炎症。即使避免了最坏的情况，也会损害磁铁的磁特性。\n\n\n\n[0007]在JP 08181028 A中所述的方法，其中相同的加工过程中防止了压粉体的氧化，在矿物油，合成油或植物油浸渍，生坯和切断在浸渍状态下用旋转刀片。\n\n[0008]在该方法中，以进行处理步骤以从Vorpresslingnach除去矿物油或其它物质相同的在烧结之前的切割是必不可少的。当脱脂不充分时，油中所含的碳在烧结过程中充当杂质，从而损害磁性。\n\n\n\n[0009]也有必要用锯刀片等切割中，在生坯大量切割间隙，从而dieMaterialausbeute降低。\n\n\n\n[0010]此外，从DE 100 45 770 A1已知的，公知的EP 0983831 A2和DE 101 57 433 A1的方法，其中用于完全烧结磁体的线锯。\n\n\n\n从JP 611 25 114 A和DE 42 06 007 A1也已知使用烧结脱模剂。\n\n发明描述\n\n\n\n[0012]为了克服上述问题所描述的问题，根据用于制造烧结磁体，其中，加工负荷大大降低和产生的热量被最小化demVorpressling的方法的优选实施方案本发明。\n\n[0013]用于生产根据本发明的优选实施例的烧结磁体的方法，包括制备生坯（生坯）的用于烧结磁体制成的粉末的步骤，加工所述生坯用Drahtsägeund烧结生压坯。\n\n\n\n[0014]在本发明的一个特定优选实施例，线锯包括具有范围为约0.05的外径至约3.0mm和磨料颗粒，其被附接到所述线的导线。\n\n\n\n在本发明的另一个优选实施例中，加工预制坯的步骤包括将预制坯切割成多个部分。\n\n\n\n[0016]加工生坯优选包括：通过相对于相对移动生坯到线锯和相对地移动所述金属丝沿derSchnittoberflächen锯切割生坯在锯割面的同时延长埃尔比勒的步骤。\n\n\n\n[0017]优选地，所述相对运动发生在加工生坯在水平面内，并且该方法可以进一步包括所述多个部分中的分离，包括在所述阶段优选地进一步包括的方法的Stufezum施加抗融合粉末之间的空间的步骤预压加工阶段后的各种零件。\n\n[0018]在本发明的一个优选实施方案中，进行加工生坯在einerInertgasatmosphäre具有的范围内的氧浓度为约5至约18％摩尔比的步骤。\n\n\n\n[0019]在本发明的另一个优选实施方案中，具有切削液（或液体润滑剂）中进行时，其被施加到锯金属丝，其与demVorpressling接触的至少一部分的压粉体的机械加工。\n\n\n\n切削液优选包含烃基有机溶剂。烃类溶剂优选包含异链烷烃。\n\n\n\n切削液是优选含有抗融合粉末的分散液。优选地，通过浸渍，滴落或喷涂或使用任何其他合适的方法将切削液施加到线锯上。\n\n\n\n预压坯可以在切削液中加工。\n\n\n\n在本发明的一个优选实施方案中，制备预制坯的步骤包括向烧结磁铁用粉末中加入润滑剂的步骤。\n\n在本发明的另一个优选实施方案中，用于烧结磁体的粉末具有a\n\n残余磁化强度在约0.001至约0.1T的范围内。\n\n\n\n[0025]在本发明的又一优选实施例中，烧结磁体粉末的粉末是OFA稀土合金RTB型（其中，R是选自ausSeltenerdmetallen和钇的组中的至少一种元素的T是包含铁的过渡金属，B是硼。用于烧结磁体的粉末的平均粒度（FSSS粒径）优选在约2.0至约8.0μm的范围内。\n\n\n\n[0026]其它特征，元素，特性，本发明的步骤和优点将变得参照附图优选实施例的以下详细描述而显而易见。\n\n附图简要说明\n\n\n\n图1示出了适用于本发明优选实施例的线锯装置的示例性结构;\n\n\n\n。[0028]图2示出了流程图，其中烧结前的生坯的切割之间的差异，根据本发明和常规切削的烧结体相对于所示derHerstellungsstufen数量的优选实施例;\n\n图3是示意性地示出在本发明的优选实施例的示例中使用的线锯的透视图。\n\n\n\n图4是说明将切削液添加到烧结磁铁用粉末时的加压密度与加工负荷的关系的图。\n\n\n\n图5是说明添加润滑剂时的送丝速度对检测的加工负荷的依赖性的图。\n\n\n\n图6是说明添加润滑剂时的切削速度与加工负荷的关系的图。\n\n\n\n图7A是说明烧结后的切割面的轮廓不均匀（起伏）与压制密度之间的关系的图。\n\n\n\n图7B以透视图的形式示出了图7A的切割表面上的轴测量范围（约32mm）;\n\n\n\n图7C是说明图7A的波的测量数据（步骤数据）的图。\n\n图8示出了根据本发明优选实施例的用线锯烧结预成型切割的优选方式。\n\n\n\n图9是说明包括适用于本发明优选实施例的线锯装置的紧凑型处理系统的示意图。\n\n\n\n图10是适用于本发明优选实施例的另一种线锯装置的示意图。\n\n\n\n图11是线锯装置的紧凑保持装置的示意图，以分解透视图的形式;\n\n\n\n图12是适用于本发明优选实施例3的线锯装置40的示意图。和\n\n\n\n图13是适用于本发明优选实施例3的线锯装置50的示意图。\n\n实施本发明的最佳方式\n\n根据本发明，由烧结磁体用粉末制成的预制件通过在烧结之前用线锯处理来加工。用线锯锯切是一种加工预压坯的方法，其中沿一个方向或两个相反方向运行的线压在待加工的预压坯上，使得预压坯用线和预压坯之间存在的磨粒加工。是。\n\n本发明的发明人已经发现，当加工在烧结之前可能经历氧化的稀土合金粉末的预压坯时，在正常旋转锯片时可能发生的热量和点火的问题。或者通过使用上述电线可以避免任何其他这样的工具。基于这些和其他发现开发了本发明。\n\n在本发明的一个优选实施方案中，优选使用具有固定在其表面上的磨粒的线材。芯线优选由具有高拉伸强度的材料制成。例如，芯线可以由冷拔金属线（钢琴线），合金（例如铝合金）制成。 Ni-Cr和Fe-Ni，一种高熔点金属，例如W和Mo，或一束尼龙纤维。如果导线过厚，则切削间隙（切削间隙）变大，从而降低了材料成品率。另一方面，如果导线过薄，则导线在加工过程中可能会因应力而断裂。此外，切割阻力增加，这可能导致产生热量和点火。鉴于上述情况，在本发明的优选实施方案中使用的线材的外径优选在约0.05至约3.0mm的范围内，更优选在约0.1至约1.0mm的范围内。这里使用的线锯通常包括切割元件，该切割元件在切割方向上的宽度为约3.0mm或更小，例如，带锯的宽度（或高度）约为3.0mm或更小。\n\n磨粒优选由具有高硬度的材料制成，例如金刚石，SiC和氧化铝。粒度通常在约10至约1000微米的范围内。磨粒优选通过粘合层（例如树脂层）附着到芯线的表面上。作为树脂层，可以使用酚醛树脂，环氧树脂或聚酰亚胺树脂。树脂层的厚度优选为约0.02至约1.0mm。\n\n作为粘合层，可以使用金属层代替树脂层来固定磨粒。因此istbeispielsweise与磨粒的金属丝通过电沉积或电镀（以下，也称为“丝与电晶”）已经被附接到其上，由于其优异的Austragsvermögens为锯屑（粉末或浆料）的优选的。也就是说，磨料颗粒（从接合层的表面突出的磨粒的部分的高度）的突出部分可以变得更大时具有电沉积晶粒的线是当一个导线与在其上通过树脂层的手段磨粒使用比用于已被附上。如果确保足够的强度，则可以使用由多个子线组成的线。通过使用多线电线，可以进一步提高锯末（锯末）的排出效率。在使用切割流体用于改进的锯末的Austragswirkungsgrades的情况下，如下面所描述的，应该向所述切割的视图液中，除了上述的优异的放电效率是从电阻的观点来看，与电沉积晶粒的线被优选使用。\n\n[0047]磨料颗粒的平均粒径d优选满足关系30微米＃d＃1000微米m.Insbesondere它优选满足关系40微米＃d＃200微米。从切割效率和desAustragswirkungsgrades用于视图锯末的观点来看，相邻的磨料颗粒之间的平均间距应derLaufrichtung的Drahsäge优选是在大约200的范围内的平均粒径d和dieherausragende高度的约600％应优选在约的范围内15至约500μm。\n\n\n\n通过在压制（压实）期间施加的对准磁场使压坯磁化。即使对于压坯的去磁也是如此\n\n以去除的磁化保持约0.001一个剩余磁化至约0.1 T.虽然剩磁的进一步减少是可能的，其特征在于处理步骤的数量增加，因此这是不期望的生产如下。因为生坯（生坯）的剩磁容易，当压坯（生坯）的切割过程中切割间隙是紧密地与线锯，切割表面上的锯屑，从而压坯（生坯）的切断片的wirddie分离使得彼此困难。为了避免这个问题，切割间隙优选为约0.1mm或更大。\n\n而且，可以使用没有固定在其表面上的磨粒的线（没有磨粒的线）。 BeiVerwendung该线类型，但是，锯屑不易发生，并且相对容易地以切槽从alsbei使用具有磨粒，其被固定在相同的表面上的（电线固定晶粒）的导线。结果，由于上述剩余磁化，更大量的锯末可能粘附到切割表面上。对于此Grundist使用的电线的具有固定于此优选的磨粒，其中所述生坯（生坯）的切断片的分离更容易。\n\n\n\n[0050]在压坯（生坯）的在多片的切断，一旦形成切割表面的线锯可以沿着再次相对容易地移动，从而有利于切割片的分离。通过这种erneuteDurchlaufenlassen导线沿着锯屑，这仍然在切割块desVorpresslings可以排出之间的空间的切割表面所看到的，并且以这种方式切割块能够从彼此分离时不会发生einAbsplittern这一点。优选地，保持预制件的切割件之间的间隙以沿着切割表面重新运行线锯。\n\n[0051]为了在切割过程中，以提高对锯末放电效率，压坯（生坯）可以与被施加到接触kommt.Durch生坯的线锯的至少一部分上施加切削液向切削液切割线锯，锯屑更容易粘到线锯上，并且灰尘颗粒也更容易粘在一起。结果，较大量的锯屑附着在线锯上并从切割部分排出。\n\n\n\n担心通过使用切削液，具有低机械强度的非烧结体更容易破碎。然而，在本发明的发明人进行的实验中，由于使用切削液可能产生的强度降低，没有发现产率降低。与此相反，锯屑排出效率通过使用切削液和生坯的abgeschnittenenTeile改进可以彼此以高概率被分离。结果，大大简化了制造过程，大大提高了产量。\n\n[0053]例如，切削成圆弧形式的生坯，其中，不同的曲率的上表面和下表面的情况下，生坯切割，使得在平面截面面积出现，包括那些在基本垂直的方向时，在支撑台的生坯放置（垂直切割）。预成形体的切割片可以在获得它们时进行烧结，而无需执行将切割片彼此分离的方法。即使在这种直接烧结中，压块的熔合的发生也是相互依赖的。因此，确保了足够的产量。\n\n\n\n作为切削液，优选使用非水切削液（有机溶剂基流体或油）来防止预压坯的氧化。优选的切削液是烃类有机溶剂，其不能作为碳保留在烧结磁体中。特别优选的是饱和烃类溶剂（如异链烷烃和正链烷烃），因为这种溶剂类型易于除去。在分散具有分散在切削液antifusing加入粉末可以用于保证切割后的紧凑件之间的甚至更有效Verhinderungder融合（焊接）。\n\n可以通过浸渍，滴落或喷涂或通过任何其他方法将切削液施加到线锯上。此外，预压坯也可以浸入切削液中并在浸入状态下切削。\n\n\n\n在下文中，将参考相关附图描述本发明的各种优选实施例。\n\n\n\n图1示出了根据本发明优选实施例1的线锯装置的示例性结构。图示的装置包括一驱动装置2，它带有一个压坯1是用于Antreibenin向上方向和向下的方向将被处理（在z轴的方向）和多个辊3a，3b，3c和3d的。\n\n\n\n如上所述，包括金属丝和固定在金属丝上的磨粒的线锯4绕辊3a至3d缠绕成线，并沿基本平行于y轴的方向延伸。线的线锯4优选地布置在基本相等的间隔在x轴的方向和布置（线间距）的间距任意取决于尺寸的生坯（生片）的板（厚度）1的形式来确定一块。在本发明的一个优选实施例中，线间距优选为约1至约30mm。\n\n考虑到线强度和切割间隙（切割间隙），用于线锯4的线的外径优选在约0.05至约3.0mm的范围内。当用线锯4切割刚性烧结体时，高达约20至约40N的力（应力）作用在线上。在优选的实施方案中，然而，其中，所述软生坯1的约0.1在本发明中，相对geringeSpannung（力）的烧结之前机加工至约10 N被施加到导线，从而切削阻力低。因此，即使在氧浓度相对较高的气氛中，也可以在没有点火和氧化问题的情况下切割和加工预压坯。\n\n\n\n在线锯4上，作为加工过程中的切削液，可以使用有机溶剂如有机溶剂。异链烷烃和乙醇。不需要施加切削液，但可以提高锯屑的排出效率，如下所述。\n\n线锯4在y轴方向上的速度（Vy）在此称为“送丝速度”。压坯1压在线锯4上，线锯4以预定的送丝速度运行以被切割/分成多个片。其中，所述生坯1被压在金属丝的速度（1/2）锯4其中驱动的derAntriebsgeschwindigkeit装置对应于在图示的例子中的z轴的方向，在本文中被称为“平均速度”简称。切削速度越高，加工所需的时间越短。\n\n\n\n焊丝进给速度和切削速度在很大程度上受加工负荷值的影响，这将从下面描述的例子中理解。为了使加工负荷达到实用范围，切削速度优选在约30至约1200mm / min的范围内，更优选约30至约800mm / min。\n\n\n\n线锯4可以沿固定方向延伸或者可以沿y轴方向往复运动。在后一种情况下，在大致矩形框架上拉伸的多根线可以用气缸或其他合适的装置在y轴方向上线性往复运动。代替气缸，可以使用包括发动机和曲柄的装置。\n\n[0064]图2示出了根据本发明和现有的切削的烧结体相对于烧结前的生坯的切割之间的差的数量，在流程图的形式的优选实施例的加工步骤。 。如图2所示，需要在以往的方法来进行的步骤：制备desAusgangsmaterial粉末，压实粉末的（推压），烧结生坯，切割EI\n\nNes烧结体，用烧结体的切片和其他阶段进行表面处理。在根据本发明的优选实施例的方法中，生坯压制（压缩）它被烧结之前，优选的用于生产具有形状和尺寸与最终磁铁制品的紧凑件后被切除接近liegen.Auf这种方式，在本发明的实施例，生坯，非常柔软并且与烧结体相比可以容易地加工，切割。这大大缩短了切割所需的时间。\n\n在本发明的优选实施例中，与传统旋转叶片与预压坯的接触面积相比，线锯和预压坯之间的接触面积小，因此，由摩擦产生的热量非常小。例如，在使用传统旋转叶片的情况下，接触面积贡献高达约1000至约10,000mm 2，并且在本发明的优选实施例中接触面积减小至约5至约50mm 2。这样，即使在普通气氛中用线锯加工，也可以可靠地防止稀土合金粉末的点燃和氧化问题。\n\n\n\n然而，应该注意，进一步抑制磁粉的氧化并实现良好\n\n磁特性，优选的是，如果磁性粉末的氧浓度超过按重量计约3000ppm的具有约10的氧浓度的惰性气体气氛中进行用钢丝锯加工至约15摩尔％。特别是，当使用氧浓度低至约3,000ppm（重量）或更低的磁粉制备生坯时，磁粉具有显着高的氧化反应性。因此，在这种情况下，Bearbeitungmit线锯方便地在其中如上所述（例如，在惰性气体气氛中具有约2摩尔％或更低的氧浓度）的氧浓度被严格限制的环境中进行。通过实现切割装置的部分包覆，可以将氧浓度控制在上述范围内的值，而不需要将线锯装置的包层与大气完全隔离。这样，当在气体气氛中切割预压坯时，优选控制气氛。\n\n另外，当如上所述在气体气氛中加工预压坯时，优选在压制（压制）之前将固体或切削液（例如脂肪酸酯）添加到磁粉中。用粉末表面上的润滑剂薄膜防止了粉末的氧化。或者，在制造预压坯之后，可在机加工之前用润滑剂充分浸渍预压坯。作为这样的润滑剂，优选在后期的烧结工序中能够容易地从预成型体中除去的润滑剂。\n\n\n\n在使用旋转刀片的传统切割中，切割间隙宽（例如，约0.5mm宽或更宽）并且这导致切割部分的锯屑（锯屑）在某些情况下在环境中以锯末的形式分布。当这些飞锯屑点燃时，这是非常危险的。通过使用根据本发明优选实施例的线锯，锯屑（锯末）的飞行被极大地最小化并消除，从而确保安全加工。\n\n根据本发明优选实施方案的线锯处理也可以在有机溶剂中进行，例如，在浸没状态下由异链烷烃代表的饱和烃溶剂。除去这种有机溶剂很容易。因此，在常规烧结过程中，生坯可以容易地脱脂，而不需要进行特殊的脱脂过程。因此，不会出现有机溶剂中的碳影响烧结磁体的磁性的问题。\n\n\n\n下面将描述根据本发明的优选实施例1的示例。\n\n\n\n在这个例子中，如图3所示，在大气中设置从下部向上移动的生坯，线锯排成三行\n\n切割。线锯的外径（线直径）约为0.24mm，线距约为5mm。使用已知的磁粉压机（FSSS粒径：约3.0至约3.2μm）由含有约26质量％（Nd + Pr）的合金制成预压机，约5质量％Dy，约1质量％B，约1质量％Co，约0.2质量％Al和约0.1质量％Cu，余量Fe。在压制（压制）期间，磁粉在磁场中排列。施加的磁场约为1.2T。所得的预制棒具有略呈方形的形状，其尺寸约为15mm（高）×41.7mm（宽）×66.2mm（深）。\n\n设定预压坯相对于线锯的​​位置，使得预压坯与每根线的接触部分的长度约为41.7mm。由预紧凑引起的加工负载（向下的力或负载）\n\n\n\n在用于称重传感器确定预压坯向上运动期间操作的线锯。在该实验中，焊丝进给速率在约100至约150m / min的范围内变化。切割速度在约150至约420mm / min的范围内变化。\n\n\n\n图4是表示根据加工负荷的压缩密度的曲线图。在图4所示的测量中，送丝速度约为150米/分钟，切割速度约为150毫米/分钟。\n\n从图4可以看出，加工负荷随着压力密度的增加而增加。然而，应该注意的是，如果压制密度过低，则预制坯的强度降低并且可能发生破裂和碎裂。为了避免这个问题，压缩密度优选为至少约3.6g / cm 3或更高。从各种观点来看，致密密度优选在约3.8至约5.0g / cm 3的范围内。考虑到烧结后的磁性和预压坯的裂化和破碎的产率，预压坯的密度特别优选在约4.0至约4.7g / cm 3的范围内。磁粉（合金材料）的真密度约为7.5g / cm 3。\n\n图5是表示焊丝进给速度对加工负荷的依赖性的图。在该测量中，切割速度为约150mm / min。图6是表示当加入上述润滑剂时切削速度对加工负荷的依赖性的曲线图。在该测量中，送丝速度约为150米/分钟。\n\n\n\n从图5可以看出，加工负荷随着送丝速度的增加而减小。从图6可以看出，加工负荷随着切削速度的降低而降低。如果焊丝进给速度和切削速度被设定在不合适的范围内，则加工负荷变得过大，结果，预制坯的切割表面可以被粗糙化。更具体地，当加工负荷大时，在切割表面上形成锯痕，使得表面不均匀达到可测量的值。这导致烧结后处理所需的工艺步骤数量的增加，并且这也导致切割后预压坯边缘处碎裂的发生率增加。\n\n图7A是显示烧结后界面的轮廓不规则性（“波浪形”或“粗糙”表面）与压制密度之间的关系的图。在该测量中，送丝速度约为150米/分钟，切割速度约为150毫米/分钟。图7B示出了显示在切割表面和所述图上的轴部（约32mm）的测量的透视图。图7C是示出了波状表面的测量数据（电平数据）的图。图7A的图是在图7C的数据的基础上进行的。\n\n\n\n从图7A中可以看出，当致密密度较高（例如，约4.3g / cm 3或更高）时，烧结体的轮廓不规则性变得更好。\n\n\n\n[0079]下面描述切割烧结前成形体的一个例子，根据与切削的烧结体，为了的比较例对本发明一起的优选实施例，以检查是否dieSchnittgeschwindigkeit和导线\n\n进给速度能够提供最合适的不规则轮廓。表1\n\n切削速度（mm / min）送丝速度（m / min）\n\n切割预制件150 150\n\n切割烧结体0.67 800\n\n\n\n[0080]正如从表1可明显看出，切割软预制件与所述电线时锯根据本发明达到了，切割速度的优选的实施方案中，小于约200更是倍高，在demVergleichsbeispiel，即使在比较低的焊丝进给速度。通过减小的加工负荷实现的切削速度的这种改进导致加工时间的缩短。\n\n\n\n下表2显示了根据本发明优选实施方案的实施例中烧结和研磨的尺寸变化。表2\n\n压制密度压实材料切割件厚度（mm）烧结体厚度（mm）研磨后厚度（mm）\n\n4.1 4.76 3.43 3.33\n\n4.3 3.50 3.41\n\n3.45\n\n4,5 3,56\n\n\n\n用线锯切割后的预压坯切割件的厚度（x轴方向的尺寸符合\n\n\n\n图1）为约4.76mm，通过从线间距（约5mm）减去外线直径（约0.24mm）确定的值。\n\n通过烧结致密块，厚度减小约30％，并且通过进一步研磨烧结体，厚度减小约0.1mm。通过烧结使预制坯的收缩在压制期间施加的对准磁场的方向上最显着。在该实例中，在预制坯的厚度方向上施加磁场以使粉末对准。\n\n\n\n在传统的切割中，已经通过烧结收缩的烧结体被切割，因此，切割间隙与烧结体的厚度之间的比率大。与此相反，在根据优选实施例的切割，本发明之间的比率，其中，生坯由收缩的切割间隙和压坯的厚度相对较小时，导线可以具有相同的外径hat.Dadurch量之前切切割产生的废料被最小化，这有助于提高材料的产量（利用效率）。\n\n\n\n接下来，参考图8，将描述烧结由线锯切割的预成形体的优选方式（在烧结过程中切割成形体的布置的种类）。\n\n如图8所示，当由线锯切割的压块在它们的切割表面彼此靠近的同时被烧结时，切割表面被熔化（或焊接在一起）。当切割间隙小时，更可能发生这种融合干涉。为了避免烧结熔化，优选在切割表面之间的空间中引入抗熔粉末，例如，Y.sub.2 O3粉末。\n\n\n\n带上。这种抗熔融粉末不限于Y 2 O 3粉末，而是可以由任何能够抵抗与磁体的稀土元素反应的材料制成。例如，可以使用Al 2 O 3和C的粉末或薄片，或者可以使用任何其他合适的材料。\n\n\n\n或者，在用线锯切割之后，紧凑件可以在它们之间以较宽的距离布置，或者它们可以单独烧结，如图2的下部所示。在这些情况下，相邻的紧凑片之间的间隙优选为约0.1mm或更大。\n\n[0089]图9示出了磁性粉末压块制造系统100，其包括根据本发明的优选实施例2中的线锯装置20的示例性构造。\n\n\n\n[0090]磁性粉末成形体制造系统100包括推压装置10和所述线锯装置20 .The磁性粉末压块制造系统100还包括一个传送带16用于输送derVerdichtungsvorrichtung 10的预压1到线锯装置20，传送带42用于传输线的截止紧凑片1a锯装置20的烧结壳体50和一个通过引导装置30传送在传送带16的预压1到线锯装置20和用于传送所述线锯装置20的紧凑件1a传送带42。\n\n\n\n[0091]磁性粉末压块生产系统100由保护壁70包围，从而使空气可以通过氮气来代替，以减少例如在钢丝锯装置20的附近的至少的氧浓度在demerläuterten例如，从传送带16的中心到保护壁70 umgebenund氮气的烧结壳体50内的系统的区域被引入到与保护壁70的区域中，以允许在上述范围内的氧浓度的控制。\n\n[0092]接着，将磁性粉末压块的制造系统100的动作进行说明。\n\n\n\n[0093]按装置10包括上模14a和下模14b和与这些组件的操作的机构和控制机构的模具14C一起（两者都未示出）。磁性粉末是在充满由模具14c的贯通孔和下模14b的，在其中使用Beschickungsbox12的上表面限定的腔，使得所述腔填充有磁性粉末。将粉末单轴具有产生生坯（生坯）的上下冲头14a和14b压紧。1按压装置10可包括一个磁路（未示出），其允许在压制期间定向磁场的磁铁粉末的应用。 desausrichtenden磁场的方向可以基本平行或基本垂直于加压方向。按压装置10可以是（未示出）配备有用于产生退磁磁场的磁路。\n\n由压力设备10产生的生坯1由传送带16传送到由安装有线锯装置20的保护壁70围绕的区域。传送带16可以设置有用于产生消磁磁场的磁路（未示出），或者可以设置有用于喷射惰性气体的机构，例如，用于喷射惰性气体的机构。 Vorpressling 1上装有氮气，用于去除附着在Vorpressling1上的磁性粉末。\n\n\n\n[0095]由保护壁70部分设置在电线传送到生坯1所包围的区域内的通过引导装置30和锯单元20，aufeiner平台28固定，放置在正确的位置，借助于一个臂34的。传送装置30在轨道32上具有两个臂34和36。臂34和36例如利用磁性卡盘（磁吸引保持机构）保持或释放预制件1或切口压块1a。臂34和36分别是垂直的并且也可沿轨道32移动。臂34和36的操作由定序装置控制，例如，单独或组合。顺便提及，臂34和36可以例如通过气缸连接到预压实机1。\n\n通过线锯装置20将预制件1水平切割成多个紧凑件1a，如下面更详细地描述的。紧凑型保持装置22相对于线锯单元24移动，以利用线锯单元24的线锯24b切割压坯1。可以通过改变电动机26的转速来调节预制件1相对于线锯24b的相对速度（切割速度）。所产生的多个卡瓦1a被臂34吸引并保持，并被输送到平台28上的缩回位置。\n\n\n\n[0097]在平台28上的缩回位置的紧凑件1a被undfestgehalten通过每个致密片的上表面上吸引到臂36顺序地并且它们被分别依次转移到板44，其被布置在传送带42在该优选实施例中，切割（切割）预制件1以具有水平切割表面。通过经由臂36紧固各紧凑部1a的上表面（或横截面面积）并基本上垂直移动臂36（在重力的方向上）仅作用的垂直作用力，以切断面和有基本上不产生剪切力相对于所述切割表面。这防止了压块1a的分裂。\n\n在将预定数量的压块1a放置在板44上之后，板44通过传送带42传送到烧结壳体50中。烧结壳体50具有多个齿条，每个齿条包括多个支撑杆。通过垂直移动升降机60来调节机架的高度，以允许板44被传送器42拾取。\n\n\n\n在将预定数量的板44插入烧结壳体50中之后，将烧结壳体50输送到烧结炉中。随后，执行与关于优选实施例1描述的处理步骤类似的处理步骤，以完成烧结磁体的制造。\n\n\n\n下面将参考图10和11详细描述优选实施例2中的线锯装置20的结构和操作。\n\n\n\n线锯装置20包括小型保持装置22和线锯单元24。\n\n如图11所示，紧凑型保持器22具有底板22a，后板22b和两个侧板22c。后板22b具有凹槽26，用于在切割预压机1之后接收线锯。每个凹槽26具有足以完全容纳线锯的尺寸（宽度和深度）。在没有凹槽26的情况下，到达后板22b的线锯可以垂直移位和/或在后板22b和紧凑件1a之间可以形成间隙，导致在压坯1的切割端部分中发生碎裂。两个侧板22c具有槽23，用于使线锯通过并在切割过程中将预压坯1和切断的压块1a夹在其间。\n\n预制件1放置在紧凑保持装置22的底板22a上，夹在两个侧板22c之间，并且在由后板22b支撑的同时相对于线锯单元24移动板22b和侧板22c用例如气缸（未示出）保持预压坯，并在切割后释放压块1a。\n\n\n\n线锯单元24具有框架24a，具有固定到其上的颗粒24b的三个线锯在框架24a上伸展，如图10所示。框架24a可滑动地安装在轨道25上，轨道25设置在站28上。框架24与曲柄24d连通，曲柄24d连接到电动机24c并沿着轨道25往复运动，同时电动机24c沿图1中箭头A所示的方向旋转。\n\n由紧凑型保持装置22保持的预压坯1相对于往复式线锯24b沿图1中箭头B所示的方向移动。具体地，线锯24b沿着紧凑保持装置22的侧板22c的狭缝23延伸，并最终到达后板22b的凹槽26，其中压块1被切割成多个紧凑件1a。然后，仍然保持紧凑件1a的紧凑保持装置22沿相反方向（向后移动）移动（见图10中的箭头B），同时线锯24b往复运动。通过沿切割表面（多个紧凑件1a之间的空间）运行线锯24b，可靠地去除残留在切割表面上的锯屑。\n\n[0106]由于线锯24b的直径比较小，因此锯屑的排出效率低，大量的小型片之间保持Säbestaub1a中回来。这可能会导致相邻Presslingsstücken1a之间的紧密接触和紧凑件1a相互的分离复杂化。特别地，所述生坯的磁粉，derunter施加定向磁场已经形成，剩余磁化强度，这恶化了Austragswirkungsgrad.Wenn在该状态下紧凑片1a分离，在紧凑型件碎裂1A能够再次auftreten.Durch使线锯24B沿其一直保持在denPresslingsstücken1A之间的空间，移除并以这种方式紧凑件1a的分离是可能彼此发生在没有einAbsplittern那的锯屑切割表面。即，如上述那样，紧凑件可各自紧凑片1a通过与磁性夹持组件紧固和仅通过粘贴顶面抬起紧凑片分离1A向上。\n\n[0107]线材的第二通道的速度锯24切割时，以除去锯末（木屑）比dieZuführungsgeschwindigkeit（切削速度）的线锯24b的可能较高。该线锯24b的第二通道优选与速度，这是切割时比通过率基本上等于或更高，因为如果第二遍的速度太低，不足以锯末（刨花）可被排放到进行。线锯24b的第二通道的方向不一定是相对desZerschneidens期间的方向，相反的方向，但是，优选使用的，因为在相反的方向上的第二通道还用作该过程的紧凑保持的重新回归在装置22用于接收下一个模具1的原始位置。\n\n\n\n在所示的示例中，生坯1和线锯24b在水平面中相对于彼此移动以进行切割。上面通过导线的重新执行的所描述的锯沿切断面24，也可以由一个应用程序，其中，所述生坯1台线锯可相对于图24B在一个基本垂直的方向，如在优选实施例1图彼此移动，来实现的。\n\n在框架24a上伸展的线锯24h的数量不受限制。线锯24b的张力（例如，约0.05N至约10N）可以根据硬度（加工的容易性），切割速度和其他因素适当地设定。紧凑-保持的移动速度装置22（切割速度）可以在依赖于线锯的厚度相同的方式来调整部24bderZuführungsgeschwindigkeit（传输速度）的电压，的生坯1个其他特性的硬度。通过适当的调整，可以使切割表面光滑并且处理阶段的数量例如是多少。通过研磨，可以减少。\n\n\n\n在所示的示例中，线锯24b与马达24c和曲柄24d一起往复运动。或者，线锯24b可以通过各种已知的方式启动。例如，长线可以在与大规模的线锯装置相反的方向或方向上运动。此外，可以使用环形线锯。由于预压坯1可以在减少线锯磨损的情况下容易地切割，因此不一定需要进给新线材。这允许使用各种驱动方法。\n\n切割过程中产生的锯末（锯屑）通过相对运动防止飞向机械部件（包括电机24c，曲柄24d，电机26和滚珠螺杆27）。如上所述，在水平面中压制件1a和线锯24b以及线锯24b在水平面中的往复运动。这是有利的，因为机器的维护容易。如果是磁铁\n\n当含有剩余磁化的粉末飞到机械部件时，该粉末难以去除并且可能导致机械部件的破损。如上所述，在水平面上切割预制坯1也是有利的，因为压制件1a可以彼此分离而不产生剪切力。\n\n由压力设备10制造的预压坯1插入由传动装置30安装在适当位置的压紧保持装置20中。当臂34设有一个旋转机构，因此能够切断生坯1的方向基本上平行于Vorpresslings1的任何表面。换句话说，切割表面可以相对于预制坯1中的对准磁场的方向任意设定。例如，如果压坯1被布置在紧凑的保持装置22，例如，获得基本上平行压制制备的wordenist，生坯1被切断的平面内大致垂直于所述剩余磁化强度。然而，利用一种机制，允许在垂直平面90°的旋转装备的臂34时，压坯1能在平面切割基本上平行于Restmagnetisierungverläuft。另外，基本上通过垂直压制制造的预压坯1可以在基本垂直于剩余磁化的平面中切割。\n\n图12示出了适用于根据本发明优选实施例3的烧结磁体的制造方法的线锯装置40的示例性结构。\n\n\n\n图12中所示的线锯装置40与图1中所示的线锯装置的不同之处在于提供了润滑剂施加装置5。具有与图1中所示的线锯装置基本相同的功能的部件用相同的附图标记表示，并且省略其重复的描述。\n\n\n\n在线锯装置40中，在线锯4与待切割的预压坯1接触之前，借助于润滑剂涂敷器5将切削液6施加到线锯4上。润滑剂施加装置5优选地包括用于接收润滑液6的容器5a和用于收集来自容器5a的切削液溢出的盘5b。切削液6在容器5a的上部开口上方保持溢流状态，以便应用于线锯4的部分穿过设置在容器5a的侧表面中的狭缝。\n\n[0116]在本实施方式（异链烷烃通常和正链烷烃），为切削液，优选使用基于饱和烃的溶剂不容易残留在烧结磁体的碳。基于饱和烃的溶剂的Dasdurchschnittliche分子量优选为约120至约500的溶剂以小于约120的平均分子量的范围内具有低的内聚，并执行由此在有效结合锯末（木屑）的难度。当使用平均分子量大于约500的溶剂时，烧结体中残留的碳量大，这不利地改变了烧结体的磁性。平均分子量更优选为约140至约450。\n\n沸点也可用于表示饱和烃基溶剂的优选材料。沸点为约80至约250℃的饱和烃基溶剂是优选的。沸点低于约80℃的溶剂具有低内聚力，因此难以有效地粘合锯末。如果具有溶剂的沸点高于约250℃更高时，在烧结体中残留碳的量是大的，由此烧结体的磁特性劣化的问题。沸点低于约80℃的溶剂是高挥发性的，因此从易于污染的工作环境的观点来看，这种溶剂是不利的。由于上面给出的原因。作为基于饱和烃的溶剂更优选是一个具有在约140范围内的平均分子量约450或具有约100的沸点范围由约230℃只有相对少量的这种溶剂可以具有有效地粘合锯末（锯末）和排出锯末的效果。异链烷烃是特别优选的，因为它可以容易地除去，因此可以保持烧结体中残留的碳量低。在该优选实施例的示例下面的本发明的描述，异链烷烃（闪点49℃，粘度：140到150，沸点166℃（初始沸腾温度）：1.2毫米2 /秒，分子量）中的溶液使用。为了有效地防止切片的压实材料之间的熔合（焊接）可以使用分散在切削液中的具有抗熔融粉末的分散体。在该优选实施方案中，优选使用Y 2 O 3粉末（氧化钇粉末）作为抗混合粉末。然而，抗真菌粉末不限于Y 2 O 3粉末，也可以使用Al 2 O 3，C和其它合适材料的粉末和薄片。可以适当地确定分散在切削液中的反熔丝粉末的量。例如，它优选在约10至约500g / L的范围内。\n\n[0118]为了在切削液中的抗融合粉末分散和施加在电线上的所得分散锯4，分散wirddie优选搅拌以防止反熔在容器5a中的粉末如示于图12的保持。的到所述线的表面锯4与切削液一起施用抗熔合粉末粘附到desZerschneidens过程中产生的切割表面，并有效地防止在后续的烧结工序中的切紧凑片之间的融合（焊接）。\n\n\n\n下面将通过使用图12中所示的线锯装置40的示例来描述通过使用切削液来提高排出效率的效果。作为切削液仅仅Isoparaffinverwendet在一个示例中，而在另一个例子中，钇氧化物分散在异链烷烃（氧化钇浓度为200g / L）。将这些实施例与不使用切削液的正常切削的情况进行比较。\n\n\n\n作为预制件1，使用具有如图12所示的不同曲率的上表面和下表面的片状预制件。用于制造预制坯1的磁粉与参考优选实施例1的实施例中使用的磁粉相同。致密密度约为4.2g / cm3。\n\n[0121]上述切断这样形成的，其中包括在基本竖直的平面时生坯1 2（垂直切割）放置在支撑基座驱动装置的平面该切断面描述的生坯1。切削优选进行利用线锯具有固定与其电沉积晶粒（外径约0.257毫米，约40的磨粒粒度为约60微米），其为电线的约230米/秒的焊丝进给速度的条件和有关的切割速度下锯4 150毫米/分钟。此后，直接烧结切割的粒料，而不进行将粒料彼此分离的特殊方法。评价所得烧结体（切割压块）之间的熔合（焊接）的发生和它们中的裂缝的发生。评价结果如下表3所示。每个实例的样品数量约为150。\n\n[0122]应当指出的是，进行在约1000℃至约1100℃的惰性气体中（稀有气体和氮气）或真空下进行持续约1至约5小时的烧结过程。所得的烧结体werden.Um的可老化一段例如约1至约8小时，根据需要，在经受约800℃约450，包含在所述烧结体的碳的量，以便改善磁特性降低如果需要，在进行烧结过程之前，可以通过加热除去添加到合金粉末中的润滑剂和切割过程中使用的切削液。以除去润滑剂中的加热是在约100℃的温度在轻松的气氛为约3至约6小时〜约600℃，虽然这些条件下，润滑剂的种类和切削液的类型依赖。在该优选实施方案中，加热在约500℃下进行约2小时。\n\n表3\n\n\n\n从表3中可以明显看出，与不使用切削液的正常切削相比，当使用已经施加切削液的线锯4进行切削时，熔化率急剧下降。这表明通过施加切削液可以提高产量。至于开裂率，可能没有太大差别，可能是因为预应力的强度不会因切削液的施加而降低。\n\n\n\n从表3中可以明显看出，与正常切割相比，通过切削液切削，切削负荷增加。这很可能是因为锯末颗粒粘附在其上施加切削液的线锯4的表面上，并且当线锯4移动时通过线锯4从切割部分带走。\n\n尽管在使用切削液时切削负荷增加，但是约30gf的负荷仍然非常低。因此，可以以高产率切割如图12所示的复杂形状的预制件，该预制件在与支撑基座接触的区域中具有小的面积并且易于变形，碎裂和开裂。由于切削负荷而产生其他缺陷。因此，由于可以高产率地切割具有与待制造的成品烧结磁体的形状接近的形状的预成型件，因此可以省略随后的成型工艺或者可以缩短执行该工艺的时间。\n\n如图13所示的线锯装置50也可用于减少在切割期间作用在预制件上的载荷（摩擦阻力）。\n\n\n\n[0127]在该线锯设备50中，一个预型体1是大致在水平方向上（由图13中的空心箭头示出）相对于电线4，它运行大致在垂直方向上，从而使压坯1被下切在包括基本垂直平面的平面中形成切割表面。在这种情况下，预成型体1，其与derlaufenden线连通的表面锯4接触（切削部分的长度）比在利用线锯40的情况下更小，如在图12dargestellt ..因此，施加到压坯1的力较小，因此切割表面更平滑。\n\n\n\n[0128]金属丝的行进方向看到4和生坯1的相对移动的方向不限于那些如示于图12和图13中，但可以适当地确定视印前1的形状和其他因素。如上所述，在可以缩短切割部分的长度的方向上切割是优选的，因为获得了光滑的表面。\n\n线锯装置50包括线锯驱动部分和壳体9内的湿式灰尘收集器7。通过用于切割，例如在图示的例子中提供的位置的金属丝驱动部，能够提供用于在切割过程足够的空间和一个过程，是相关的切割过程（例如，用于生坯1的运输）配置。锯屑（锯末）被收集在湿式集尘器中的收集液8中，如图13所示。这种集尘可以防止污染工作环境。壳体9中的气氛优选地用氮气代替。\n\n\n\n在优选实施例3中，通过浸渍将切削液施加到线锯4上。或者，可以使用空气滴注，喷雾或其组合。顺便提及，预成型件可以保持在切削液中并在浸入状态下切割。\n\n然而，在该方法中，出现了切削液和其他材料的处理问题。因此，为了用少量切削液获得足够的效果，优选使用浸渍，滴落和喷射方法中的一种。通过浸渍，滴落或喷射将切削液施加到线锯上可以通过相对小的结构或装置容易地实现。因此，这适用于线锯装置20（图10），例如，在优选实施例2中。\n\n优选用于上述优选实施方案的R-Fe-B稀土金属磁性粉末可通过使用以下工艺步骤制备：\n\n第一Gießflocken的R-Fe-B系稀土类合金材料通过公知的带材铸件Verfahrens.Insbesondere熔化来制备，获得了具有通过使用高频熔解法，从而形成合金的熔体所需要的组成的合金。熔融合金被保持在约1350℃，然后用快速淬火用于制造由厚度快速淬火的约0.3 mm.The方法的合金薄片状成型块单辊法这样的条件下进行辊的周向表面速度约为1m / s，冷却速率约为500℃/ s，过冷温度为200℃。\n\n以这种方式生产的快速凝固合金的厚度在约0.03至约10mm的范围内。该合金包含R2T14B晶粒和分布在R2T14B晶粒的晶界周围的富R相。 R2T14B晶粒的尺寸分别在短轴和长轴方向上为约0.1至约100μm和约5至约500μm。富R相的厚度优选为约10μm或更小。例如，在美国专利No.5,383,978中描述了通过带式浇铸方法制造起始合金的方法，该专利的内容通过引用结合在此。\n\n[0134]此后，在材料包片状铸造合金块被填充，这是werden.Danach然后装入到框架，装载有使用材料转运输送到氢炉的前部的材料包装，然后引入氢炉的帧，将起始合金在炉内加热并进行氢粉碎过程。以这种方式粗粉碎的起始合金优选在合金温度降至约室温后取出。然而，如果在合金的温度仍然很高起始合金被排出（例如，在约40至约80℃的范围内），是没有那么强，当它经受nichtder空气氧化合金。作为该氢粉碎工艺的结果，将稀土合金粗粉碎至约0.1至约1.0mm的粒径。如上所述，起始合金优选粗粉碎成之前将其进行氢粉碎处理具有约1至约10mm之间的平均粒径的薄片。\n\n在通过该氢粉碎方法粗粉碎起始合金之后，优选使用诸如旋转冷却器的冷却装置将脆性合金细碎并冷却。如果排出的材料仍然具有相对高的温度，则可以将材料冷却更长的时间。\n\n\n\n然后，将已经通过旋转冷却器冷却至约室温的起始粉末细粉碎，以制备细粉末。在所示的优选实施例中，使用粉末细粉碎磁粉\n\n在氮气环境下的喷射磨机中，获得平均粒径（FSSS粒径）为约3.0至约3.2μm的磁粉。该氮气环境中的氧浓度应优选仅为约10,000ppm。例如，在日本专利公开No.6-6728中描述了用于这种方法的喷射磨机。特别是，氧的重量优选包含在微细粉碎的磁铁粉末应为约6000 ppm以下，更优选为约3000ppm或通过调节浓度einesoxidierenden气体少（即，氧或水蒸汽），其周围的气体在用于精细粉碎包括在内。这是因为，当稀土金属磁性粉末中含有的氧的重量超过约6000ppm时，所得烧结磁体中非磁性氧化物的总百分比通常太高而不能获得改善的磁性能。\n\n[0137]随后，润滑剂（例如，在按质量计约0.3％的量），并用在einemRüttelmischer磁性粉末，从而使磁性粉末颗粒的表面涂覆有润滑剂混合。作为润滑剂，可以使用用石油溶剂稀释的脂肪族酯。在所示的实施例中，己酸甲酯用作脂族酯，异链烷烃用作石油溶剂。己酸甲酯和异链烷烃可以以例如约1：9的重量比混合在一起。像这样的切削液不仅防止氧化derPulver粒子通过覆盖其表面，而且还通过在压制过程中标准化的粒料的密度消除了生坯的不安取向。\n\n\n\n应注意，润滑剂不限于示例类型。例如，作为脂族酯的己酸甲酯可以用辛酸甲酯，月桂酸甲酯或月桂酸甲酯代替。有用溶剂的实例包括石油溶剂，例如，异链烷烃和环烷烃溶剂。润滑剂可以在任何时间加入，例如在精细粉碎之前，期间或之后。代替切削液或除了切削液之外，还可以使用固体（干燥）润滑剂，例如硬脂酸锌。\n\n使用定向磁场基本上垂直于所施加的按压方向的范围为约0.5平行于或基本至约1.5 MA /米下以已知压机压制[0139]所述的磁铁粉末。\n\n\n\n[0140]对于本发明的描述是R-Fe-B型烧结磁体，其容易被氧化和几乎不能maschinellbearbeitet使用。但是，本发明也适用于由其他材料制成的稀土烧结磁体和其它烧结磁体。\n\n\n\n在以上描述中，切割预压坯。本发明也可以适用于生坯的轮廓加工，其中，所述生坯，同时相对地移动二维或者相对于线锯三维einerNC控制加工。通过这个过程中，生坯可定制，以任何形状，诸如弧形形状和鼓状的形状。\n\n根据本发明的优选实施例，在用窄线锯烧结之前处理相对柔软的预压坯。由此，减少了加工负荷，并且预压坯中的发热也被最小化。因此，即使在由对氧化敏感的磁粉制造磁铁时，也可以显着缩短加工所需的时间，并且还可以大大降低生产成本。在不损害最终磁性的情况下。另外，与使用传统旋转叶片的情况相比，可以减小切割间隙（切割间隙）。这提高了材料产量。\n\n应注意，以上描述仅是对本发明的说明。在不脱离本发明的范围的情况下，本领域技术人员可以做出各种替换和修改。因此，本发明包括\n\n还包括落入所附权利要求范围内的所有替代，修改和变型。');
INSERT INTO `os_patent_instruction_text` VALUES (12943, 22772, 'TECHNICAL FIELD \n\n[0001]The present invention relates to a magnetizing method for a rare earth magnet, and more particularly to a magnetizing method suitable for magnetizing a rare earth magnet which is used in a fixed condition to a rotor in a rotating machine.\n\nBACKGROUND ART \n\n[0002]Presently, as rare earth magnets, two kinds of magnets, i.e., rare earth/cobalt-based magnets and rare-earth/iron/boron-based magnets are widely used in various fields.\n\n[0003]Among them, the rare-earth/iron/boron-based magnets (hereinafter, referred to as “R-T-(M)-B magnets”, R is a rare earth element including Y, T is Fe or a mixture of Fe with Co and/or Ni, M is an additive element (at least one of Al, Ti, Cu, V, Cr, Ni, Ga, Zr, Nb, Mo, In, Sn, Hf, Ta, W, for example), and B is boron or a mixture of boron with carbon) exhibit the highest maximum magnetic energy product in various kinds of magnets, and they are relatively cheep. For these reasons, the R-T-(M)-B magnets are actively adopted to various electronic equipments.\n\n[0004]For example, in order to attain high energy efficiency, or for the purposes of miniaturization, weight reduction, and the like, the rare earth magnets are used in various rotating machines (such as motors). For example, Japanese Laid-Open Patent Publication No. 2000-41372 discloses a moving-magnet type direct-current torque motor 10 as shown in FIG. 5.\n\n[0005]The direct-current torque motor 10 includes a rotor 1 in which permanent magnets 5 and 6 are cylindrically fixed around a cylindrical iron core (soft iron, for example) 4 having an axis 3 as the center, and a stator 2 having a substantially “C” shape in which a first magnetic pole portion 7 and a second magnetic pole portion 8 disposed oppositely while keeping a predetermined gap with the rotor 1 in end portions thereof, respectively, are formed, and a coil 9 is wound around a base portion (in an upper portion of the figure). The stator 2 is formed by superposing flat rolled magnetic steel sheets and strip having a saturation magnetic flux density of 1.6 T (tesla) or more, for example.\n\n[0006]The permanent magnets 5 and 6 disclosed in the above-identified publication are permanent magnets each having a semi-cylindrical shape (segment), and are magnetized in directions opposite to each other. For example, in the magnet 5, a front face (an outer circumference) side is the N pole, and a back face (an inner circumference) side is the S pole. On the other hand, in the magnet 6, a front face (an outer circumference) side is the S pole, and a back face (an inner circumference) side is the N pole. Instead of the magnets 5 and 6, a cylindrical magnet (not shown) which is integrally compacted can be used.\n\n[0007]It was found that when the magnets 5 and 6 used in a rotor of the above-mentioned motor 10 were magnetized in a condition where they were disposed in a cylindrical manner, or an integrally formed cylindrical magnet was magnetized, a conventional magnetization in which a magnetic field was applied once in a diametrical direction caused a problem that a boundary portion between regions magnetized in directions opposite to each other (corresponding to the magnets 5 and 6 in FIG. 5) was not sufficiently magnetized. In such a magnet which is insufficiently magnetized, an average magnetic flux density is reduced and an angle range in which a desired surface magnetic flux density is obtained is narrowed. In addition, in an angle distribution (around an axis) of the surface magnetic flux density, an extremal value occurs in the vicinity of the boundary portion, and a linearity of the variation in the surface magnetic flux density is lowered. As a result, it may be difficult to adjust the angle of a rotating machine with good precision, or the performance of the rotating machine may not be sufficiently exercised.\n\nDISCLOSURE OF INVENTION \n\n[0008]The present invention has been conducted in view of the above-mentioned prior art. One of objects of the present invention is to provide a magnetizing method of, when a magnet which is disposed in a cylindrical manner is magnetized so as to form regions magnetized in directions opposite to each other, magnetizing the vicinity of the regions in a predetermined direction more surely than in the prior art. Another object of the present invention is to provide a magnet magnetized by such a magnetizing method and a high-performance rotating machine employing the magnet, especially a rotating machine in which adjustment of angle can be performed with good precision.\n\n[0009]The magnetizing method for a rare earth magnet according to the present invention includes: a step of preparing a rare earth magnet disposed for forming a cylinder; a first magnetizing step of applying a first external magnetic field to the rare earth magnet, thereby forming a first region magnetized from an inner side to an outer side of the cylinder and a second region magnetized from the outer side to the inner side; and a second magnetizing step of applying a second external magnetic field in such a manner that an external magnetic field component in a direction for forming an angle of more than 0° and less than 50° with respect to an external magnetic field component applied in the first magnetizing step is applied to a boundary between the first region and the second region, thereby attaining the above-mentioned objects.\n\n[0010]In a preferred embodiment, the rare earth magnet is supported in a relatively rotatable manner around an axis of the cylinder with respect to a magnetic circuit, the first magnetizing step is performed in a first position which is a relative position to the magnetic circuit, and the second magnetizing step is performed after the rare earth magnet is relatively rotated around the axis with respect to the magnetic circuit.\n\n[0011]In a preferred embodiment, a two-pole magnet having the first region and the second region one by one along a circumference of the cylinder is formed.\n\n[0012]Preferably, an angle formed by a direction of the external magnetic field component applied in the first magnetizing step and a direction of the external magnetic field component applied in the second magnetizing step to the boundary between the first region and the second region is 20° or more and 40° or less. More preferably, the angle is 25° or more and 35° or less.\n\n[0013]Preferably, strengths of the first external magnetic field and the second external magnetic field are substantially equal to each other. For example, preferably, the first external magnetic field and the second external magnetic field are generated in the same conditions by using one and the same magnetic circuit, and only the relative positions thereof (angles around the axis) with respect to the magnetic circuit of the rare earth magnet are changed. As the magnetic circuit, various types of known magnetic circuits can be used.\n\n[0014]Preferably, the rare earth magnet is a diametrically oriented anisotropic sintered magnet.\n\n[0015]The rare earth magnet according to the invention is magnetized by using any one of the above-mentioned magnetizing methods, so that the magnet has superior magnetic properties.\n\n[0016]The rare earth magnet according to the invention is a cylindrical rare earth magnet including: a first region magnetized from an inner side to an outer side of the cylinder; and a second region magnetized from the outer side to the inner side, wherein a surface magnetic flux density continuously varies without taking an extremal value at an boundary between the first region and the second region.\n\n[0017]In a preferred embodiment, an angle range in which the surface magnetic flux density takes the maximum value is 120° or more and 140° or less in the first region or in the second region.\n\n[0018]In a preferred embodiment, an angle range in which the surface magnetic flux density increases from a zero point up to the maximum value is 20° or more and 30° or less.\n\n[0019]The rotating machine according to the present invention is provided with the rare earth magnet produced by the above-mentioned production method, so that the rotating machine has superior properties, and is suitable used for a valve opening control apparatus, or the like.\n\nBRIEF DESCRIPTION OF DRAWINGS \n\n[0020]FIGS. 1(a) and (b) are diagrams schematically showing a magnetizing method for a rare earth magnet according to the present invention, and after a first magnetizing step shown in (a), a second magnetizing step shown in (b) is performed.\n\n[0021]FIG. 2 is a view schematically showing a magnetizing apparatus 100 used for performing a magnetizing method in an embodiment of the present invention.\n\n[0022]FIGS. 3(a) to (c) are graphs showing dependence on angles of a surface magnetic flux density Bg of a radial ring magnet, (a) shows the dependence by a conventional magnetizing method, and (b) and (c) show the dependencies by the method according to the present invention.\n\n[0023]FIG. 4 is a graph for explaining a difference in magnetic properties of a radial ring magnet depending on a rotation angle θ.\n\n[0024]FIG. 5 is a view showing a known rotating machine in which a rare earth magnet according to the present invention is suitably used.\n\nBEST MODE FOR CARRYING OUT THE INVENTION \n\n[0025]Hereinafter, with reference to the drawings, an embodiment of a magnetizing method for a rare earth magnet according to the present invention will be described. The present invention is, however, not limited to the embodiment described below.\n\n[0026]The magnetizing method for the rare earth magnet according to the present invention includes at least two magnetizing steps as shown in FIGS. 1(a) and (b).\n\n[0027]First, a rare earth magnet (for simplicity, one before magnetization is also referred to as “a magnet”) 22 disposed so as to form a cylinder 22a is prepared. The rare earth magnet 22 may be a rare earth magnet integrally formed, or may be a magnet in which a plurality of segment magnets are fixed to a surface of a columnar rotor (Step (a)).\n\n[0028]Next, by applying a first external magnetic field H1 to the rare earth magnet 22, a first region R1 magnetized from an inner side to an outer side of the cylinder 22a and a second region R2 magnetized from the outer side to the inner side are formed (Step (b)). At this time, the direction of magnetization of a boundary portion BR between the first region R1 and the second region R2 of the rare earth magnet 22 is not stable. Especially in an anisotropic rare earth sintered magnet of a diametrical orientation, crystal grains are oriented in a diametrical direction, so that crystal grains in the boundary portion BR are affected by a magnetizing magnetic field in a direction perpendicular to the direction of orientation (that is, a direction of tangent with respect to the cylinder 22a). Thus, the crystal grains in the boundary portion BR are not sufficiently magnetized. Conventionally, only this magnetizing step was performed.\n\n[0029]In the magnetizing method of the present invention, a second external magnetic field H2 is additionally applied so that an external magnetic field component (herein represented by H2) in a direction forming an angle of more than 0° and less than 50° with a direction of the external magnetic field component (herein represented by H1) applied in the first magnetizing step is applied to the boundary portion BR between the first region R1 and the second region R2 (Step (c)). Depending on the second external magnetic field H2, the direction of magnetization of the crystal grains in the boundary portion BR. The strengths of the first external magnetic field H1 and the second external magnetic field H2 are preferably substantially equal to each other. The first magnetizing step and/or the second magnetizing step may be performed a plurality of times. The strengths of the external magnetic fields H1 and H2 are appropriately set in accordance with the rare earth magnet to be employed, but the strengths are set to be 2 T to 4 T in the case of a diametrical orientation R-T-(M)-B magnet.\n\n[0030]In FIGS. 1(a) and (b), for simplicity, a condition in which the external magnetic field H1 or H2 in the same direction is applied to the whole of the rare earth magnet 22 is shown, but the condition is not necessarily required. For example, external magnetic field components in different directions may be applied to the boundary portion BR and to the vicinity of the center of the respective regions R1 and R2.\n\n[0031]Hereinafter, an embodiment employing a diametrical orientation R-T-(M)-B anisotropic sintered magnet with superior flatness in the surface magnetic flux density (the maximum value) will be described. The radial ring magnet (the reference numeral 112 in FIG. 2) employed in the embodiment will be manufactured in the following manner, for example.\n\n[0032]First, rare earth alloy powder is prepared by a quenching method (the cooling rate of 102 to 104°C./sec.) such as strip casting (see the specification of U.S. Pat. No. 5,383,978). The powder is compacted by pressing under an aligning magnetic field having a magnetic field intensity in the cavity of 0.4 MA/m or more, thereby forming a compacted body with a density of 3.5 g/cm3 or more. The obtained compacted body is sintered (in an Ar atmosphere at 1000° C. to 1100° C. for 2 to 5 hours), and is subjected to an aging (at 400° C. to 600° C. for 3 to 7 hours), thereby forming a radial ring magnet. A shape of the radial ring magnet has, for example, an outer diameter of 29 mmΦ, an inner diameter of 25 mmΦ, and a height of 12 mm. The radial ring magnet is produced by a known method, so that the detailed description of the production method is omitted (see Japanese Laid-Open Patent Publication No. 2001-192705, for example). The radial ring magnet may be formed in such a manner that a plurality of segment magnets (compacted bodies) are bonded so as to have a ring shape (a cylindrical shape). It is understood that, also in this case, the orientation of magnetic particle in the finally obtained radial ring magnet is set to be diametrical orientation, and the sintered magnet has the magnetic anisotropy in a diametrical direction from the center of the ring.\n\n[0033]In this embodiment, the magnetization is performed by using a magnetizing apparatus 100 shown in FIG. 2.\n\n[0034]The magnetizing apparatus 100 includes a columnar rotor 110 fixed to a shaft 103, and a magnetic circuit 120 (120a and 120b) for generating an external magnetic field for the rotor 110. The shaft 103 is supported in a rotatable manner by means of a supporting base 130. As described below, in order to change relative positions of the radial ring magnet 112 to be magnetized and the magnetic circuit 120 by a predetermined degree of rotation (θ) with the shaft 103 as a center, a rotating mechanism 132 in which grooves provided at predetermined angles are clamped may be provided. By providing such a mechanism gradually rotating by a predetermined angle, the control of the rotation angle θ can be easily performed with good reproducibility.\n\n[0035]The magnetic circuit 120 has a yoke 122 (122a and 122b). On the yoke 122, a coil 124 (124a and 124b) connected to a capacitor power supply (not shown) is wound. On an outer circumference of the columnar rotor 110, a cylindrical radial ring magnet 112 is disposed. The magnetic circuits 120a and 120b generate an external magnetic field in a predetermined direction (H1 and H2 in FIG. 1, for example) for the radial ring magnet 112. As the magnetic circuit 120, another known magnetic circuit such as an air-core coil may be employed. In addition, by appropriately changing the shapes of magnetic poles of the magnetic circuit, a radial ring magnet having four or more poles can be magnetized.\n\n[0036]First, in a condition where the radial ring magnet 112 was in a first position with respect to the shaft 103, a predetermined external magnetic field (about 3 T) was applied from the magnetic circuits 120a and 120b. The first position may be an arbitrary position.\n\n[0037]FIG. 3(a) shows the dependence on angles of the surface magnetic flux density Bg (T: tesla) of the radial ring magnet 112 obtained by performing the first magnetizing step only, measured by a Gauss meter with a Hall element probe. As for measuring angles, a direction passing through a boundary line (equivalent to a line rectangularly crossing a line linking the center of an N region to the center of an S region) between the N-pole region of the obtained radial ring magnet 112 (a region R1 magnetized toward the outer circumference) and the S-pole region (a region R2 magnetized toward the inner circumference), and through a center axis of the radial ring magnet 112 was 0°.\n\n[0038]Next, after the implementation of the first magnetizing step, in the second position reached by rotating the radial ring magnet 112 by a predetermined angle θ around the shaft 103 with respect to the first position, an external magnetic field which is the same as that-in the first magnetizing step was applied. FIG. 3(b) shows the dependence on angles of the surface magnetic flux density Bg of the radial ring magnet 112 obtained at the rotation angles θ of 20° and 40° (the same results were obtained at 20° and 40°). FIG. 3(c) shows the dependence on angles of the surface magnetic flux density Bg of the radial ring magnet 112 obtained at the rotation angle of 30°.\n\n[0039]As shown in FIGS. 3(a) to (c), the surface magnetic flux density Bg along the circumference of the radial ring magnet takes the value of 0 in the boundary portion BR between the first region R1 and the second region R2 (see FIG. 1), and thereafter, the value (an absolute value) is increased up to the maximum value in each of the first region R1 and the second region R2. Thereafter, the value experiences a flat area, and becomes zero in the boundary portion BR again. Strictly, the maximum value in each of the first region R1 and the second region R2 is the maximal value, and the value of the surface magnetic flux density Bg in the flat area is slightly smaller than the maximum value (the maximal value). Herein, the flat area between the two maximal values in the first region R1 and the second region R2, respectively, is referred to as “a maximum-value area” in which the surface magnetic flux density Bg takes the maximum value.\n\n[0040]First, as is apparent from the graph of FIG. 3(a), the boundary portion BR between the first region R1 and the second region R2 (see FIG. 1) is not sufficiently magnetized by only one magnetizing process, so that the angle ranges of the maximum-value area in which the surface magnetic flux density Bg takes the maximum value (50° to 150°, and 220° to 330°) are narrow. In addition, an average magnetic flux density is low. Moreover, the surface magnetic flux density Bg is not continuously varied in the vicinity of the boundary portion BR, but takes the extremal value (the maximal value and the minimal value). In the vicinity of the boundary portion BR, the angle range from the zero point to the maximum value of the surface magnetic flux density Bg exceeds 30°.\n\n[0041]As described above, if the magnetization is performed only by the first magnetizing step, the angle range of the maximum-value area of the surface magnetic flux density Bg is less than 120° which is relatively narrow in each of the first region R1 and the second region R2. In addition, the extremal value appears in the variation of the surface magnetic flux density Bg in the boundary portion BR between the first region R1 and the second region R2. Therefore, if a rotating machine is configured, for example, by using the radial ring magnet 122 having the above-described properties, not only the energy efficiency is low, but also large vibration occurs. Moreover, it is difficult to produce a precise position (angle) sensor with such a radial ring magnet.\n\n[0042]On the other hand, as shown in FIGS. 3(b) and (c), it is found that, as for the properties of the radial ring magnet obtained by the magnetizing method of the present invention, the angle range in which the surface magnetic flux density Bg takes the maximum value is wide, and the average magnetic flux density is high. The angle range of the maximum area is 30° to 150° and 210° to 330° in the example shown in FIG. 3(b), and 20° to 150° and 195° to 330° in the example shown in FIG. 3(c).\n\n[0043]In the vicinity of the boundary portion BR between the first region R1 and the second region R2, the surface magnetic flux density monotonically increases or decreases, so that the extremal value (the maximal value or the minimal value) seen in FIG. 3(a) does not exist. Especially, in the radial ring magnet 112 in the case where the rotation angle θ is 30° shown in FIG. 3(c), the angle range taking the maximum value is wide and the average magnetic flux density is high. In addition, it is found that the variation of the surface magnetic flux density Bg in the vicinity of the boundary portion BR between the first region R1 and the second region R2 is very smooth.\n\n[0044]As described above, by performing the first magnetizing step and the second magnetizing step, a radial ring magnet having the angle range of the maximum value area of the surface magnetic flux density Bg of 120° to 140° and the angle range in which the surface magnetic flux density Bg increases from the zero point up to the maximum value of 20° to 30° can be obtained. The surface magnetic flux density Bg of the radial ring magnet monotonically increases or decreases without taking the extremal value in the vicinity of the boundary portion BR between the first region R1 and the second region R2, so that the linearity of the variation of the surface magnetic flux density Bg is high.\n\n[0045]FIG. 4 shows the results by plotting values obtained by dividing the angle range in which the surface magnetic flux density Bg of various radial ring magnets 112 obtained by changing the rotation angle θ takes the maximum value and the angle range in which the surface magnetic flux density takes a value which is the half or more of the maximum value by 360 degrees, with respect to the rotation angle θ. The rotation angle θ=0° shows the case where only the first magnetizing step is performed. When the rotation angle θ was 50°, substantially the same results as those in the case of θ=0° could be obtained.\n\n[0046]As is apparent from the graph in FIG. 4, it is found that, by adopting the magnetizing method of the present invention and setting the rotation angle θ so as to be more than 0° and less than 50°, the angle range in which the surface magnetic flux density Bg takes the maximum value and the angle range in which the surface magnetic flux density takes a value which is the half of the maximum value are increased as compared with the prior-art magnetizing method (corresponding to the rotation angle θ=0° in FIG. 4). In addition, by setting the rotation angle θ to be in the range of 20° to 40°, as shown in FIG. 3(b), there appears no extremal value in the variation of the surface magnetic flux density Bg in the boundary portion BR between the first region R1 and the second region R2, and the surface magnetic flux density varies continuously and smoothly. In addition, by setting the rotation angle θ to be 30°±5°, the variation of the surface magnetic flux density Bg in the boundary portion BR is more smooth. As shown in FIG. 3(c), when the rotation angle θ is about 30°, the surface magnetic flux density Bg is most smoothly varied.\n\n[0047]As described above, by the magnetizing method according to the present invention, a radial ring magnet in which a boundary portion BR between regions magnetized in directions opposite to each other (the first region R1 and the second region R2) is magnetized more surely than in the prior art can be obtained. If a rotating machine as shown in FIG. 5 is configured by using such a radial ring magnet, the obtained rotating machine has high energy efficiency and less vibration. Such a rotating machine is suitably used for an application in which angles are required to be controlled with high precision such as a control apparatus for a slot value, as disclosed in Japanese Laid-Open Patent Publication\n\nINDUSTRIAL APPLICABILITY \n\n[0048]According to the present invention, a magnetizing method in which, when magnets disposed in a cylindrical manner so as to form regions magnetized in directions opposite to each other are to be magnetized, the vicinity of the boundary between the regions is magnetized in a predetermined direction more surely than in the prior art can be provided. In addition, by using a magnet magnetized by such a magnetizing method, a rotating machine with high performance can be provided. When a rare earth magnet according to the present invention is used, torque ripple in a motor, an actuator, or the like is reduced, and the energy efficiency is improved.\n\n[0049]Especially, a magnet obtained by magnetizing a diametrical orientation R-T-(M)-B sintered magnet by the magnetizing method of the present invention is suitably used in a high-performance rotating machine or a high-precision sensor for detecting a position (an angle). It is understood that the present invention is not limited to the rare earth sintered magnet, and the present invention can be used for magnetizing various rare earth magnets such as a bonded magnet.', '技术领域 \n\n [0001] 稀土磁体的磁化方法技术领域本发明涉及稀土磁体的磁化方法,更具体地,涉及适合于将在固定条件下使用的稀土磁体磁化到旋转机械中的转子的磁化方法。 \n\n 背景技术 \n\n [0002] 当前,作为稀土磁体,两种磁体,即稀土/钴基磁体和稀土/铁/硼基磁体被广泛用于各个领域。 \n\n [0003] 其中,稀土/铁/硼基磁体(以下称为“ RT-(M)-B磁体”,R为包括Y的稀土元素,T为Fe或Fe与Co的混合物 和/或Ni,M是添加元素(例如,Al,Ti,Cu,V,Cr,Ni,Ga,Zr,Nb,Mo,In,Sn,Hf,Ta,W中的至少一种),和 B是硼或硼与碳的混合物)在各种磁体中表现出最高的最大磁能积,并且相对较便宜。 由于这些原因,R-T-(M)-B磁体被积极地用于各种电子设备。 \n\n [0004] 例如,为了获得高能量效率,或者出于小型化,减轻重量等的目的,稀土磁体被用于各种旋转机器(例如电动机)中。 例如,日本特开2000-41372号公报公开了一种动磁式直流转矩电动机。 10  如图 5, \n\n [0005] 直流转矩电动机 10  包括一个转子 1  在其中永磁体 5  和 6  围绕圆柱形铁芯(例如软铁)以圆柱形方式固定 4  有轴 3  以中心和定子 2  具有大致“ C”形,其中第一磁极部分 7  和第二磁极部分 8  相对设置,同时与转子保持预定间隙 1  在其端部分别形成有线圈 9  围绕基部(在图的上部)缠绕。 定子 2  例如,通过将具有1.6T(特斯拉)或更高的饱和磁通密度的扁平轧制电磁钢板和带材叠置而形成“薄板”。 \n\n [0006] 永磁体 5  和 6  在上述出版物中公开的永磁体分别是半圆柱形(扇形),并且在彼此相反的方向上被磁化。 例如在磁铁 5 正面(外周)侧为N极,背面(内周)侧为S极。 另一方面,在磁铁 6 正面(外周)侧为S极,背面(内周)侧为N极。 代替磁铁 5  和 6 可以使用整体压紧的圆柱形磁体(未示出)。 \n\n [0007] 人们发现,当磁铁 5  和 6  用于上述电动机的转子 10  在以圆筒状配置的状态下将它们磁化,或者将整体形成的圆筒形磁体磁化,常规的磁化是沿径向一次施加磁场的磁化引起了在磁化方向上的区域之间的边界部分的问题。 彼此相对(对应于磁铁 5  和 6  在图。  5)没有充分磁化。 在这种磁化不充分的磁体中,平均磁通密度降低并且获得期望的表面磁通密度的角度范围变窄。 另外,在表面磁通密度的角度分布(围绕轴线)中,在边界部分附近出现极值,并且表面磁通密度的变化的线性降低。 结果,可能难以以高精度调节旋转机的角度,或者旋转机的性能可能无法充分发挥。 \n\n 发明内容 \n\n [0008] 鉴于上述现有技术进行了本发明。 本发明的一个目的是提供一种磁化方法,当以圆柱形方式布置的磁体被磁化以形成沿彼此相反的方向磁化的区域时,沿预定方向磁化该区域的附近。 比现有技术更确定。 本发明的另一个目的是提供一种通过这种磁化方法磁化的磁体以及使用该磁体的高性能旋转机械,尤其是能够高精度地进行角度调整的旋转机械。 \n\n [0009] 根据本发明的稀土磁体的磁化方法包括:准备用于形成圆柱体的稀土磁体的步骤; 第一磁化步骤,其向稀土磁体施加第一外部磁场,从而形成从圆柱体的内侧向外侧磁化的第一区域和从外侧向内侧磁化的第二区域。 第二磁化步骤,其以如下方式施加第二外部磁场:使得外部磁场分量在相对于施加在所述磁场中的外部磁场分量形成大于0°且小于50°的角度的方向上。 对第一区域和第二区域之间的边界施加第一磁化步骤,从而实现上述目的。 \n\n [0010] 在一个优选实施例中,稀土磁石相对于磁路以相对于圆柱体的轴线相对可旋转的方式被支撑,第一磁化步骤在相对于磁路的相对位置的第一位置进行,并且 在稀土磁体相对于磁路绕轴相对旋转之后,执行第二磁化步骤。 \n\n [0011] 在一个优选的实施方式中,形成具有沿着圆柱体的圆周一个第一区域和第二区域一个接一个的两极磁体。 \n\n [0012] 优选地,由在第一磁化步骤中施加的外部磁场分量的方向与在第二磁化步骤中施加的外部磁场分量的方向与第一区域和第二区域之间的边界形成的角度为20°或20°。 大于等于40° 更优选地,该角度为25°以上且35°以下。 \n\n [0013] 优选地,第一外部磁场和第二外部磁场的强度基本上彼此相等。 例如,优选地,通过使用一个和相同的磁路,在相同的条件下产生第一外部磁场和第二外部磁场,并且仅相对于磁路的相对位置(围绕轴线的角度)。 稀土磁铁变了。 作为磁路,可以使用各种已知的磁路。 \n\n [0014] 优选地,稀土磁体是直径定向的各向异性烧结磁体。 \n\n [0015] 通过使用上述磁化方法中的任何一种来磁化根据本发明的稀土磁体,使得该磁体具有优异的磁性能。 \n\n [0016] 根据本发明的稀土磁体是圆柱形稀土磁体,其包括:从圆柱体的内侧磁化到外侧的第一区域;以及从圆柱体的内侧到外侧磁化的第一区域。 从外侧到内侧磁化的第二区域,其中表面磁通密度连续变化,而在第一区域和第二区域之间的边界处不取极值。 \n\n [0017] 在优选的实施方式中,在第一区域或第二区域中,表面磁通密度成为最大值的角度范围为120°以上且140°以下。 \n\n [0018] 在优选的实施方式中,表面磁通密度从零点增加到最大值的角度范围为20°以上且30°以下。 \n\n [0019] 本发明的旋转机具备通过上述制造方法制造的稀土类磁铁,因此,旋转机具有优异的特性,适合用于阀开度控制装置等。 \n\n 附图说明 \n\n [0020] 无花果 1( a )和( b 图2是示意性地表示本发明的稀土类磁铁的磁化方法的图,图1是表示第1磁化步骤后的图。 a ),第二磁化步骤( b )。 \n\n [0021] 图。 图2是示意性地表示磁化装置的图。 100  在本发明的实施例中,用于执行磁化方法的磁头。 \n\n [0022] 无花果 3( a ) 至 ( c )是示出径向环形磁体的表面磁通密度Bg的角度依赖性的曲线图, a )显示了常规磁化方法的依赖性,并且( b )和( c )示出了根据本发明的方法的依赖性。 \n\n [0023] 图。 图4是用于说明径向环形磁体的磁性能随旋转角θ而变化的曲线图。 \n\n [0024] 图。 图5是示出其中适当地使用根据本发明的稀土磁体的已知旋转机械的视图。 \n\n 实施本发明的最佳模式 \n\n [0025] 在下文中,参考附图,将描述根据本发明的用于稀土磁体的磁化方法的实施例。 但是,本发明不限于以下说明的实施方式。 \n\n [0026] 根据本发明的稀土磁体的磁化方法包括至少两个磁化步骤,如图1和2所示。  1( a )和( b )。 \n\n [0027] 首先,稀土磁体(为简单起见,在磁化之前也称为“磁体”) 22  布置成形成圆柱体 22 a  准备好了。 稀土磁铁 22  可以是一体形成的稀土类磁铁,也可以是将多个扇形磁铁固定于圆柱状转子的表面的磁铁(工序(a))。 \n\n [0028] 接下来,通过施加第一外部磁场H 1  到稀土磁铁 22 ,第一个区域R 1  从圆柱体的内侧磁化到外侧 22 a  和第二区域R 2  形成从外侧到内侧磁化的(步骤(b))。 此时,第一区域R之间的边界部分BR的磁化方向 1  和第二个区域R 2  稀土磁铁 22  不稳定。 特别是在直径方向的各向异性稀土烧结磁体中,晶粒沿直径方向取向,因此边界部分BR中的晶粒在垂直于取向方向的方向上(即,即 ,相对于圆柱体的切线方向 22 a )。 因此,边界部分BR中的晶粒没有被充分磁化。 常规上,仅执行该磁化步骤。 \n\n [0029] 在本发明的磁化方法中,第二外部磁场H 2  附加地施加使得外部磁场分量(在此由H表示 2 )在与外部磁场分量的方向(此处用H表示)成大于0°且小于50°的角度的方向上 1 将在第一磁化步骤中施加的)施加到第一区域R之间的边界部分BR 1  和第二个区域R 2  (步骤(c))。 取决于第二外部磁场H 2 边界部分BR中的晶粒的磁化方向。 第一外部磁场H的强度 1  第二外部磁场H 2  优选彼此基本相等。 可以多次执行第一磁化步骤和/或第二磁化步骤。 外部磁场的强度H 1  和H 2 根据所使用的稀土磁体适当地设定“β”,但是在径向取向R-T-(M)-B磁体的情况下,将强度设定为2T至4T。 \n\n [0030] 在图。  1( a )和( b )为简单起见,其中外部磁场H 1  或H 2  以相同的方向应用于整个稀土磁体 22  显示了,但条件不是必需的。 例如,可以将不同方向上的外部磁场分量施加到边界部分BR和各个区域R的中心附近。 1  和R 2 。 \n\n [0031] 在下文中,将描述采用径向取向R-T-(M)-B各向异性烧结磁体的实施例,该磁体在表面磁通密度(最大值)方面具有优异的平坦度。 径向环形磁铁(参考数字 112  在图。 例如,将以以下方式制造在该实施例中采用的2)。 \n\n [0032] 首先,通过淬火方法制备稀土合金粉末(冷却速率为10 2  至10 4 °C / sec。)(例如带钢铸造)(请参见美国专利5,383,978的规范)。 通过在腔内的磁场强度为0.4MA / m以上的取向磁场下加压来压实粉末,从而形成密度为3.5g / cm的压实体。 3  或者更多。 将得到的成形体烧结(在Ar气氛中,在1000℃〜1100℃下进行2〜5小时),并进行时效处理(在400℃〜600℃下进行3〜7小时)。  ),从而形成径向环形磁铁。 径向环形磁体的形状例如具有29mmΦ的外径,25mmΦ的内径和12mm的高度。 径向环形磁体是通过已知方法制造的,因此省略了该制造方法的详细描述(例如,参见日本公开专利公报第2001-192705号)。 放射状环形磁体可以以如下方式形成:将多个分段磁体(压缩体)结合成具有环形(圆柱形)的形状。 可以理解的是,在这种情况下,最终获得的径向环形磁体中的磁性粒子的取向也被设定为径向取向,并且烧结磁体具有从环的中心沿直径方向的磁各向异性。 \n\n [0033] 在该实施例中,通过使用磁化设备来执行磁化。 100  如图所示。  2。 \n\n [0034] 充磁设备 100  包括圆柱转子 110  固定在轴上 103 和磁路 120  ( 120 a  和 120 b )产生转子的外部磁场 110 。 轴 103  通过支撑基座可旋转地支撑 130 。 如下所述,为了改变径向环形磁铁的相对位置 112  被磁化和磁路 120  轴旋转预定角度(θ) 103  旋转机构为中心 132  可以提供其中夹有以预定角度设置的凹槽的方式。 通过提供这样一种以预定角度逐渐旋转的机构,可以容易地以良好的再现性来执行旋转角θ的控制。 \n\n [0035] 磁路 120  a 122  ( 122 a  和 122 b )。 在轭上 122 线圈 124  ( 124 a  和 124 b 连接到电容器电源(未显示)的)缠绕。 在圆柱状转子的外周上 110 ,圆柱状径向环形磁铁 112  被处置。 磁路 120 a  和 120 b  产生预定方向的外部磁场(H 1  和H 2  在图。  1,例如)为径向环形磁铁 112 。 作为磁路 120 可以使用诸如空心线圈之类的另一种已知的磁路。 另外,通过适当地改变磁路的磁极的形状,可以使具有四个以上的磁极的径向环形磁体磁化。 \n\n [0036] 首先,在径向环形磁铁的情况下 112  相对于轴处于第一位置 103 ,从磁路施加了预定的外部磁场(约3 T) 120 a  和 120 b 。 第一位置可以是任意位置。 \n\n [0037] 图。  3( a )表示径向环形磁铁的表面磁通密度Bg(T:特斯拉)与角度的关系 112  通过仅执行第一个磁化步骤获得的结果,该结果由带有霍尔元件探头的高斯计测量。 至于测量角度,在获得的径向环形磁体的N极区域之间通过边界线的方向(相当于与将N区域的中心与S区域的中心连接的线矩形相交的线) 112  (区域R 1  朝着外周磁化)和S极区域(区域R 2  朝内圆周磁化),并通过径向环形磁铁的中心轴 112  是0°。 \n\n [0038] 接下来,在执行第一磁化步骤之后,通过旋转径向环形磁体到达第二位置 112  绕轴以预定角度θ旋转 103  对于第一位置,施加与第一磁化步骤中相同的外部磁场。 图。  3( b )表示径向环形磁铁的表面磁通密度Bg对角度的依赖性 112  在20°和40°的旋转角θ处获得(在20°和40°处获得相同的结果)。 图。  3( c )表示径向环形磁铁的表面磁通密度Bg对角度的依赖性 112  以30°的旋转角度获得。 \n\n [0039] 如图所示。  3( a ) 至 ( c ),沿径向环形磁体的圆周的表面磁通密度Bg在第一区域R之间的边界部分BR中取值为0 1  和第二个区域R 2  (参见图1),然后,在每个第一区域R中将该值(绝对值)增加到最大值。 1  和第二个区域R 2 。 之后,该值经历平坦区域,并且在边界部分BR中再次变为零。 严格地,每个第一区域R中的最大值 1  和第二个区域R 2  是最大值,在平坦区域中的表面磁通密度Bg的值略小于最大值(最大值)。 这里,第一区域R中的两个最大值之间的平坦区域 1  和第二个区域R 2 分别称为“最大值区域”,其中表面磁通密度Bg取最大值。 \n\n [0040] 首先,如从图1的图表显而易见的,  3( a ),第一区域R之间的边界部分BR 1  和第二个区域R 2  (参见图1)仅通过一个磁化处理就不能充分磁化,从而表面磁通密度Bg取最大值的最大值区域的角度范围(50°至150°,以及220°至220°)。  330°)很窄。 另外,平均磁通密度低。 此外,表面磁通密度Bg在边界部分BR附近不是连续变化的,而是取极值(最大值和最小值)。 在边界部分BR的附近,从零点到表面磁通密度Bg的最大值的角度范围超过30°。 \n\n [0041] 如上所述,如果仅通过第一磁化步骤进行磁化,则表面磁通密度Bg的最大值区域的角度范围小于120°,这在每个第一区域R中相对较窄。 1  和第二个区域R 2 。 另外,极值出现在第一区域R之间的边界部分BR中的表面磁通密度Bg的变化中。 1  和第二个区域R 2 。 因此,例如在使用径向环形磁铁构成旋转机械的情况下 122 具有上述特性的不仅能量效率低,而且产生大的振动。 而且,用这种径向环形磁体难以制造精确的位置(角度)传感器。 \n\n [0042] 另一方面,如图1至图4所示。  3( b )和( c ),发现通过本发明的磁化方法获得的径向环形磁体的性能,表面磁通密度Bg取最大值的角度范围宽,并且平均磁通密度 高。 在图2所示的示例中,最大区域的角度范围是30°至150°和210°至330°。  3( b 在图1所示的例子中,为20°〜150°,195°〜330°。  3( c )。 \n\n [0043] 在第一区域R之间的边界部分BR附近 1  和第二个区域R 2 因此,表面磁通密度单调增加或减少,因此,在图3中看到的极值(最大值或最小值)被增大。  3( a ) 不存在。 特别是在径向环形磁铁中 112  在旋转角θ为图30所示的30°的情况下,  3( c ),取最大值的角度范围宽,平均磁通密度高。 另外,发现第一区域R之间的边界部分BR附近的表面磁通密度Bg的变化。 1  和第二个区域R 2  很顺利 \n\n [0044] 如上所述,通过执行第一磁化步骤和第二磁化步骤,径向环形磁体具有120°至140°的表面磁通量密度Bg的最大值区域的角度范围和表面在其中的角度范围。 磁通密度Bg从零点增加到最大值20°至30°。 径向环形磁铁的表面磁通密度Bg在第一区域R之间的边界部分BR附近不取极值的情况下单调增加或减少。 1  和第二个区域R 2 因此,表面磁通密度Bg的变化的线性高。 \n\n [0045] 图。 图4示出了通过将各个径向环形磁铁的表面磁通密度Bg划分成角度范围而得到的值进行绘制而得到的结果。 112  相对于旋转角θ,通过使旋转角θ变化而得到的最大值为最大值,并且表面磁通密度为最大值的一半以上360度的角度范围。 旋转角θ= 0°表示仅执行第一磁化步骤的情况。 当旋转角度θ为50°时,可以获得与在θ= 0°的情况下基本相同的结果。 \n\n [0046] 从图2中的曲线可以明显看出。 由图4可知,通过采用本发明的磁化方法,将旋转角度θ设定为大于0°且小于50°,表面磁通密度Bg为最大的角度范围。 与现有的磁化方法相比(对应于图4中的旋转角θ= 0°),增大了磁通量的值和表面磁通密度取最大值的一半的角度范围。 另外,通过将旋转角度θ设置在20°至40°的范围内,如图2所示,可以将旋转角θ设置在20°至40°之间。  3( b ),在第一区域R之间的边界部分BR中表面磁通密度Bg的变化没有极值。 1  和第二个区域R 2 ,表面磁通密度连续且平滑地变化。 另外,通过将旋转角度θ设置为30°±5°,边界部分BR中的表面磁通密度Bg的变化更加平滑。 如图1所示。  3( c ),当旋转角θ约为30°时,表面磁通密度Bg最平滑地变化。 \n\n [0047] 如上所述,通过根据本发明的磁化方法,形成一种径向环形磁体,其中沿彼此相反的方向磁化的区域(第一区域R)之间的边界部分BR 1  和第二个区域R 2 磁化强度比现有技术更可靠。 如果旋转机器如图1所示, 通过使用这样的径向环形磁铁构成图5所示的结构,所得到的旋转电机的能量效率高且振动少。 这样的旋转机适合用于要求高精度控制角度的应用中,例如用于狭缝值的控制装置,如日本公开专利公报中所公开的那样。 \n\n 工业适用性 \n\n [0048] 根据本发明,一种磁化方法,其中,当以圆柱形方式布置的磁体形成在彼此相反的方向上被磁化的区域时,被磁化时,区域之间的边界附近在预定方向上被磁化。 可以比现有技术更确定地提供。 另外,通过使用通过这种磁化方法磁化的磁体,可以提供高性能的旋转机械。 当使用根据本发明的稀土磁体时,减小了电动机,致动器等中的转矩脉动,并且提高了能量效率。 \n\n [0049] 尤其是,通过本发明的磁化方法将径向取向的RT-(M)-B烧结磁体磁化而获得的磁体适合用于高性能旋转机械或高精度传感器中以检测位置(角度)。  )。 应当理解,本发明不限于稀土烧结磁体,并且本发明可以用于磁化各种稀土磁体,例如粘结磁体。');
INSERT INTO `os_patent_instruction_text` VALUES (12944, 22773, '【0001】\n\n【発明の属する技術分野】\n\n本発明は、高耐食性や絶縁性などの各種機能を希土類系永久磁石に付与することができる、公害問題がなく、地球環境に優しい永久磁石の製造方法に関する。\n\n【0002】\n\n【従来の技術】\n\nNd-Fe-B系永久磁石に代表されるR-Fe-B系永久磁石やSm-Fe-N系永久磁石に代表されるR-Fe-N系永久磁石などの希土類系永久磁石は、資源的に豊富で安価な材料が用いられ、かつ、高い磁気特性を有していることから、特にR-Fe-B系永久磁石は今日様々な分野で使用されている。\n\nしかしながら、希土類系永久磁石は反応性の高い希土類元素:Rを含むため、大気中で酸化腐食されやすく、何の表面処理をも行わずに使用した場合には、わずかな酸やアルカリや水分などの存在によって表面から腐食が進行して錆が発生し、それに伴って、磁石特性の劣化やばらつきを招く。さらに、錆が発生した磁石を磁気回路などの装置に組み込んだ場合、錆が飛散して周辺部品を汚染する恐れがある。\n\n上記の点に鑑み、希土類系永久磁石に耐食性を付与する目的で、その表面に耐食性被膜としての樹脂被膜を形成することが古くから行われている。\n\nこれまで、希土類系永久磁石の表面に樹脂被膜を形成する場合、被膜成分となる樹脂を有機溶剤に溶解して調製した塗液を電着塗装法、スプレー塗装法、浸漬塗装法、ロールコート法などによって磁石の表面に塗布した後、熱処理を行うことで樹脂被膜とする方法が採用されてきた。このような塗液を使用した樹脂被膜形成方法は、工程が簡易であることなどの点において非常に利用価値が高いものである。しかしながら、この方法は、熱処理による樹脂被膜形成過程において有機溶剤が被膜から蒸発することで被膜にピンホールが発生しやすいといった問題や塗液の歩留まりが悪いといった問題があることから、得られる樹脂被膜の耐食性被膜としての性能の点やコストの点において満足できる方法とはいえないものである。また、地球環境の改善を図る点においても、有機溶剤を使用するこの方法は望ましいものではない。従って、このような塗液を使用した樹脂被膜形成方法の代替方法として、粉体塗料を使用して静電粉体塗装により希土類系永久磁石の表面に樹脂被膜を形成する方法が既に提案されている(特開平11-238620号公報)。\n\n【0003】\n\n【発明が解決しようとする課題】\n\n粉体塗料を使用して静電粉体塗装により希土類系永久磁石の表面に樹脂被膜を形成する方法は、静電塗装ガンなどによりマイナスに帯電させた粉体塗料を静電引力で希土類系永久磁石の表面に塗着させた後、熱処理を行うことで粉体塗料を溶融させて樹脂被膜とする方法であり、塗液を使用した樹脂被膜形成方法に比較して形成される樹脂被膜が耐食性に優れること、磁石の表面に塗着しなかった粉体塗料は回収して再利用ができるので無駄がなく歩留まりがよいこと、有機溶剤を使用しないので公害問題がないことなどの点において優れた方法であるが、昨今の希土類系永久磁石に要求される高耐食性を満足させるためにはさらなる改善を必要とする。\n\nまた、近年、希土類系永久磁石には、その適用分野に応じて高耐食性のみならず絶縁性などの各種機能が要求されており、希土類系永久磁石に各種機能を付与することができる優れた方法が切望されている。\n\nそこで本発明は、高耐食性や絶縁性などの各種機能を希土類系永久磁石に付与することができる、公害問題がなく、地球環境に優しい永久磁石の製造方法を提供することを目的とする。\n\n【0004】\n\n【課題を解決するための手段】\n\n本発明者は上記の点に鑑みて種々の検討を行った結果、無機質微粒子と樹脂とからなる粉体塗料を使用して静電粉体塗装により希土類系永久磁石の表面に無機質微粒子分散樹脂被膜を形成することで、上記の目的を達成することができることを知見した。\n\n【0005】\n\n本発明は上記の知見に基づいてなされたものであり、本発明の永久磁石の製造方法は、請求項1記載の通り、無機質微粒子と樹脂とからなる粉体塗料であって、無機質微粒子として平均粒径が0.01μm〜20μmである亜鉛微粒子を25重量%〜95重量%含有し、平均粒度が10μm〜50μmである個々の粉体の表面に亜鉛微粒子が露出して存在\n\nする粉体塗料を使用して静電粉体塗装により希土類系永久磁石の表面に無機質微粒子分散樹脂被膜を形成することを特徴とする。\n\n  また、請求項2記載の製造方法は、請求項1記載の製造方法において、樹脂がエポキシ樹脂であることを特徴とする。\n\n  また、請求項3記載の製造方法は、請求項1または2記載の製造方法において、無機質微粒子分散樹脂被膜の膜厚が10μm〜50μmであることを特徴とする。\n\nまた、本発明の永久磁石は、請求項4記載の通り、請求項1記載の製造方法にて製造されたことを特徴とする。\n\n【0006】\n\n【発明の実施の形態】\n\n本発明の永久磁石の製造方法は、無機質微粒子と樹脂とからなる粉体塗料を使用して静電粉体塗装により希土類系永久磁石の表面に無機質微粒子分散樹脂被膜を形成することを特徴とするものである。樹脂を有機溶剤に溶解して得られた溶液に無機質微粒子を分散させて調製した塗液を使用した無機質微粒子分散樹脂被膜の形成方法は既に知られているが、本発明の方法によって形成される無機質微粒子分散樹脂被膜は、希土類系永久磁石の表面に対する密着性に優れることに加え、塗液を使用する方法によって形成される無機質微粒子分散樹脂被膜よりも、樹脂被膜中に分散させた無機質微粒子がより高くその機能を発揮するというこれまでの知見からは予期することができなかった効果を奏する。\n\n【0007】\n\n粉体塗料の構成成分となる無機質微粒子は、希土類系永久磁石に対して付与しようとする機能に応じて適宜選択される。例えば、高耐食性の付与を目的とする場合、亜鉛微粒子やアルミニウム微粒子やマグネシウム微粒子などを選択すればよい。これらの金属微粒子は希土類系永久磁石の表面素地よりも電位が卑であるので、これらの金属微粒子を分散させた樹脂被膜を希土類系永久磁石の表面に形成した場合、樹脂被膜中の金属微粒子が電気化学的犠牲防食作用を発揮することで、被膜全体として希土類系永久磁石に高耐食性を付与することができる。また、絶縁性の付与を目的とする場合、SiO2やAl2O3などの金属酸化物の微粒子を樹脂被膜中に分散させればよい。また、アナターゼ型TiO2微粒子を樹脂被膜中に分散させれば、希土類系永久磁石に光触媒機能を付与することができる。\n\n【0008】\n\n無機質微粒子の平均粒径は0.01μm〜20μmであることが望ましい。平均粒径が0.01μm未満であると、無機質微粒子の凝集が起こりやすくなるので、個々の粉体中において無機質微粒子を均一分散させることが困難になり、ひいては希土類系永久磁石の表面に無機質微粒子が均一分散した樹脂被膜を形成することが困難になることで希土類系永久磁石に高耐食性を付与することができなくなる恐れがあるからである。一方、平均粒径が20μmを超えると、形成される被膜の膜厚が厚くなりすぎることから、優れた寸法精度を有する小型磁石の提供や磁石の有効体積の確保が困難になる恐れがあるからである。\n\n【0009】\n\n粉体塗料の構成成分となる樹脂としては、エポキシ樹脂、アクリル樹脂、ポリエステル樹脂、ポリアミド樹脂、ポリイミド樹脂、ポリアミドイミド樹脂など、一般的に粉体塗料の構成成分として使用される樹脂が挙げられるが、中でもエポキシ樹脂は耐食性や取扱性の点で優れた樹脂であり、ポリイミド樹脂は絶縁性や耐ガス性や耐熱性の点で優れた樹脂であることから、これらの樹脂は本発明において好適に採用される。\n\n【0010】\n\n粉体塗料中における無機質微粒子の含有量は25重量%〜95重量%であることが望ましい。25重量%未満であると、樹脂被膜中に無機質微粒子を分散させることによる効果が十分に発揮されない恐れがある一方、95重量%を超えると、樹脂被膜の本質的な機能が損なわれたり、被膜の平滑性が損なわれたりすることで、希土類系永久磁石に目的とする機能を付与することができなくなる恐れがあるからである。\n\n【0011】\n\n無機質微粒子と樹脂とからなる粉体塗料は、自体公知の粉体塗料製造技術、即ち、例えば\n\n、原料となる無機質微粒子と樹脂に、必要に応じて、樹脂硬化剤(エポキシ樹脂を採用する場合には芳香族アミンや酸無水物やジシアンジアミド誘導体などが一般的に使用される)、各種の添加剤、触媒などを均一混合した後、溶融分散、冷却、粉砕、篩分工程を経て製造される。このようにして製造される粉体塗料の平均粒度は10μm〜50μmであることが望ましい。理由は、後述するように、希土類系永久磁石の表面に形成される無機質微粒子分散樹脂被膜の膜厚は10μm〜50μmであることが望ましく、このような膜厚の被膜を形成するのに都合がよいからである。\n\n【0012】\n\n無機質微粒子と樹脂とからなる粉体塗料を使用した静電粉体塗装は、自体公知の静電粉体塗装技術によって行えばよい。また、例えば、特開平11-57592号公報に記載された電解流動静電粉体塗装技術によれば、希土類系永久磁石の表面全体に無機質微粒子分散樹脂被膜を均一に形成することができる。このようにして形成される無機質微粒子分散樹脂被膜の膜厚は10μm〜50μmであることが望ましい。膜厚が10μm未満であると、無機質微粒子分散樹脂被膜としての性能が十分に発揮されない恐れがある一方、膜厚が50μmを超えると、優れた寸法精度を有する小型磁石の提供や磁石の有効体積の確保が困難になる恐れがあるからである。\n\n【0013】\n\nなお、本発明の方法によって形成された無機質微粒子分散樹脂被膜を表面に有する希土類系永久磁石は、例えば、エポキシ系接着剤やアクリル系接着剤などの有機系接着剤を使用して磁気回路などの装置に組み込まれて使用されるが、樹脂被膜中に無機質微粒子を分散させると、樹脂被膜の表面の濡れ性やアンカー効果が向上するので、本発明の製造方法によれば、樹脂被膜と有機系接着剤との優れた接着性を獲得することもできる。\n\n【0014】\n\n【実施例】\n\n本発明を以下の実施例によってさらに詳細に説明するが、本発明はこれに限定して解釈されるものではない。\n\nなお、以下の実験は、例えば、米国特許4770723号公報や米国特許4792368号公報に記載されているようにして、公知の鋳造インゴットを粉砕し、微粉砕後に成形、焼結、熱処理、表面加工を行うことによって得られた14Nd-79Fe-6B-1Co組成(at%)の縦15mm×横10mm×高さ2mm寸法の焼結磁石(以下、磁石体試験片と称する)を使用して行った。\n\n【0015】\n\n実施例1:\n\n公知の粉体塗料製造技術に従い、ビスフェノールA型エポキシ樹脂(エピコート1002:油化シェル社製)13重量%と、樹脂硬化剤であるジシアンジアミド誘導体(アラルダイトHT-2844:旭チバ社製)7重量%と、平均粒径が4μmの亜鉛微粒子(ジンクダスト♯3:堺化学社製)80重量%を均一混合した後、溶融分散、冷却、粉砕、篩分工程を経て、亜鉛微粒子の含有量が80重量%であって平均粒度が25μmの粉体塗料を製造した。\n\n公知の静電粉体塗装技術に従い、エタノール中で3分間超音波洗浄を行って表面脱脂した後、真空中にて100℃で10分間乾燥した磁石体試験片の表面に、静電塗装ガンによりマイナスに帯電させた粉体塗料を静電引力で塗着させた後、大気中にて180℃で15分間熱処理を行って焼付けし、磁石体試験片の表面に膜厚が約30μmの亜鉛微粒子分散エポキシ樹脂被膜(被膜中における亜鉛微粒子の分散量は80重量%)を形成した。\n\n以上のようにして得られた亜鉛微粒子分散エポキシ樹脂被膜を表面に有する磁石体試験片に対し、35℃の5%塩水を噴霧する耐食性試験を行ったところ、100時間経過後においても発錆は観察されなかった(n=10)。\n\n【0016】\n\n比較例1:\n\nエタノール中で3分間超音波洗浄を行って表面脱脂した後、真空中にて100℃で10分\n\n間乾燥した磁石体試験片の表面に、平均粒径が4μmの亜鉛微粒子を含有するエポキシ樹脂塗液(エポローバル:ローバル社製)をスプレー塗装法によって塗布した後、大気中にて180℃で15分間熱処理を行って焼付けし、磁石体試験片の表面に膜厚が約30μmの亜鉛微粒子分散エポキシ樹脂被膜(被膜中における亜鉛微粒子の分散量は96重量%)を形成した。\n\n以上のようにして得られた亜鉛微粒子分散エポキシ樹脂被膜を表面に有する磁石体試験片に対し、35℃の5%塩水を噴霧する耐食性試験を行ったところ、全てのサンプルにおいて48時間経過後に発錆が観察された(n=10)。\n\n【0017】\n\n比較例2:\n\n公知の静電粉体塗装技術に従い、エタノール中で3分間超音波洗浄を行って表面脱脂した後、真空中にて100℃で10分間乾燥した磁石体試験片の表面に、静電塗装ガンによりマイナスに帯電させたエポキシ樹脂からなる粉体塗料(ビリューシアEP1000:日本ペイント社製)を静電引力で塗着させた後、大気中にて180℃で15分間熱処理を行って焼付けし、磁石体試験片の表面に膜厚が約30μmのエポキシ樹脂被膜を形成した。\n\n以上のようにして得られたエポキシ樹脂被膜を表面に有する磁石体試験片に対し、35℃の5%塩水を噴霧する耐食性試験を行ったところ、全てのサンプルにおいて24時間経過後に発錆が観察された(n=10)。\n\n【0018】\n\n実施例1および比較例1において形成された亜鉛微粒子分散エポキシ樹脂被膜は、被膜中に水分が浸入した場合、希土類系永久磁石の表面素地と亜鉛微粒子との間で腐食電池が形成され、希土類系永久磁石の表面素地よりも電位が卑な亜鉛微粒子が希土類系永久磁石に代わって腐食する、即ち、亜鉛微粒子が電気化学的犠牲防食作用を発揮することに加え、溶出した亜鉛が水分や炭酸ガスなどと反応して生成した亜鉛化合物が被膜表面や被膜中に存在する空隙を埋め尽くして被膜を緻密化することで外部からの腐食因子の浸入を阻止し、よって、被膜全体として高耐食性を希土類系永久磁石に付与するものである。\n\nここで驚くべきことに、実施例1において形成された亜鉛微粒子分散エポキシ樹脂被膜の方が比較例1において形成された亜鉛微粒子分散エポキシ樹脂被膜よりも亜鉛微粒子の分散量が少ないにもかかわらずより高い耐食性を希土類系永久磁石に付与することができた。このような結果になった理由としては次のような要因が考えられる。即ち、比較例1の亜鉛微粒子分散エポキシ樹脂塗液中の亜鉛微粒子は、エポキシ樹脂で被覆されたような状態で存在するので、形成された被膜中においては、希土類系永久磁石の表面素地と亜鉛微粒子との接触部が比較的少ないと思われる。しかしながら、実施例1の粉体塗料では個々の粉体の表面に亜鉛微粒子が露出して存在しており(この事実は粉体塗料の表面EPMA分析にて本発明者が確認している)、このような粉体塗料を使用して静電粉体塗装により形成された被膜中においては、希土類系永久磁石の表面素地と亜鉛微粒子との接触部が多いと思われ、よって、亜鉛微粒子の電気化学的犠牲防食作用が如何なく発揮されたことが考えられる。また、希土類系永久磁石の表面素地と亜鉛微粒子との接触部が多いことは、磁石の表面に対する被膜の密着性を向上させ、磁石の表面への水分の到達を効果的に阻止することに寄与していると考えられる。さらに、比較例1においては、熱処理による樹脂被膜形成過程において有機溶剤が被膜から蒸発することで被膜にピンホールが発生することが考えられるが、有機溶剤を使用しない実施例1においては原理上このような現象が起こらないことも要因の一つとして考えられる。\n\n【0019】\n\n【発明の効果】\n\n本発明によれば、高耐食性や絶縁性などの各種機能を希土類系永久磁石に付与することができる、公害問題がなく、地球環境に優しい永久磁石の製造方法が提供される。', '【0001】\n\n技术领域\n\n本発明は、高耐食性や絶縁性などの各種機能を希土類系永久磁石に付与することができる、公害問題がなく、地球環境に優しい永久磁石の製造方法に関する。\n\n【0002】\n\n发明背景\n\n由ND-Fe-B永磁体和稀土的永磁体表示的基于R-Fe-B的永磁体如SM-Fe-N永磁体代表的R-Fe-N永磁体是资源,因为丰富而廉价使用材料并具有高磁性,R-Fe-B永磁体特别用于当今各个领域。\n\nしかしながら、希土類系永久磁石は反応性の高い希土類元素:Rを含むため、大気中で酸化腐食されやすく、何の表面処理をも行わずに使用した場合には、わずかな酸やアルカリや水分などの存在によって表面から腐食が進行して錆が発生し、それに伴って、磁石特性の劣化やばらつきを招く。此外,如果锈生成的磁铁被结合到诸如磁路的装置中,则锈蚀可以散射到污染的外围部件。\n\n上記の点に鑑み、希土類系永久磁石に耐食性を付与する目的で、その表面に耐食性被膜としての樹脂被膜を形成することが古くから行われている。\n\nこれまで、希土類系永久磁石の表面に樹脂被膜を形成する場合、被膜成分となる樹脂を有機溶剤に溶解して調製した塗液を電着塗装法、スプレー塗装法、浸漬塗装法、ロールコート法などによって磁石の表面に塗布した後、熱処理を行うことで樹脂被膜とする方法が採用されてきた。このような塗液を使用した樹脂被膜形成方法は、工程が簡易であることなどの点において非常に利用価値が高いものである。しかしながら、この方法は、熱処理による樹脂被膜形成過程において有機溶剤が被膜から蒸発することで被膜にピンホールが発生しやすいといった問題や塗液の歩留まりが悪いといった問題があることから、得られる樹脂被膜の耐食性被膜としての性能の点やコストの点において満足できる方法とはいえないものである。また、地球環境の改善を図る点においても、有機溶剤を使用するこの方法は望ましいものではない。従って、このような塗液を使用した樹脂被膜形成方法の代替方法として、粉体塗料を使用して静電粉体塗装により希土類系永久磁石の表面に樹脂被膜を形成する方法が既に提案されている(特開平11-238620号公報)。\n\n【0003】\n\n本发明要解决的问题\n\n粉体塗料を使用して静電粉体塗装により希土類系永久磁石の表面に樹脂被膜を形成する方法は、静電塗装ガンなどによりマイナスに帯電させた粉体塗料を静電引力で希土類系永久磁石の表面に塗着させた後、熱処理を行うことで粉体塗料を溶融させて樹脂被膜とする方法であり、塗液を使用した樹脂被膜形成方法に比較して形成される樹脂被膜が耐食性に優れること、磁石の表面に塗着しなかった粉体塗料は回収して再利用ができるので無駄がなく歩留まりがよいこと、有機溶剤を使用しないので公害問題がないことなどの点において優れた方法であるが、昨今の希土類系永久磁石に要求される高耐食性を満足させるためにはさらなる改善を必要とする。\n\nまた、近年、希土類系永久磁石には、その適用分野に応じて高耐食性のみならず絶縁性などの各種機能が要求されており、希土類系永久磁石に各種機能を付与することができる優れた方法が切望されている。\n\nそこで本発明は、高耐食性や絶縁性などの各種機能を希土類系永久磁石に付与することができる、公害問題がなく、地球環境に優しい永久磁石の製造方法を提供することを目的とする。\n\n【0004】\n\n[解决问题的手段]\n\n本発明者は上記の点に鑑みて種々の検討を行った結果、無機質微粒子と樹脂とからなる粉体塗料を使用して静電粉体塗装により希土類系永久磁石の表面に無機質微粒子分散樹脂被膜を形成することで、上記の目的を達成することができることを知見した。\n\n【0005】\n\n本発明は上記の知見に基づいてなされたものであり、本発明の永久磁石の製造方法は、請求項1記載の通り、無機質微粒子と樹脂とからなる粉体塗料并且,锌细颗粒暴露于平均粒径为0.01μm至20μm的单个粉末的表面,作为无机细颗粒,并且锌细颗粒暴露在平均粒度为10的单独粉末的表面上μm至50μm。存在\n\n粉末涂料を使用して静電粉体塗装により希土類系永久磁石の表面に無機質微粒子分散樹脂被膜を形成することを特徴とする。\n\n魔鬼索赔2描述的制造方法是1記載の製造方法において、樹脂がエポキシ樹脂であることを特徴とする。\n\n魔鬼索赔3記載の製造方法は、請求項1或者2記載の製造方法において、無機質微粒子分散樹脂被膜の膜厚が10μm〜50μmであることを特徴とする。\n\nまた、本発明の永久磁石は、請求項4記載の通り、請求項1記載の製造方法にて製造されたことを特徴とする。\n\n【0006】\n\n发明内容\n\n本発明の永久磁石の製造方法は、無機質微粒子と樹脂とからなる粉体塗料を使用して静電粉体塗装により希土類系永久磁石の表面に無機質微粒子分散樹脂被膜を形成することを特徴とするものである。樹脂を有機溶剤に溶解して得られた溶液に無機質微粒子を分散させて調製した塗液を使用した無機質微粒子分散樹脂被膜の形成方法は既に知られているが、本発明の方法によって形成される無機質微粒子分散樹脂被膜は、希土類系永久磁石の表面に対する密着性に優れることに加え、塗液を使用する方法によって形成される無機質微粒子分散樹脂被膜よりも、樹脂被膜中に分散させた無機質微粒子がより高くその機能を発揮するというこれまでの知見からは予期することができなかった効果を奏する。\n\n【0007】\n\n粉体塗料の構成成分となる無機質微粒子は、希土類系永久磁石に対して付与しようとする機能に応じて適宜選択される。例えば、高耐食性の付与を目的とする場合、亜鉛微粒子やアルミニウム微粒子やマグネシウム微粒子などを選択すればよい。これらの金属微粒子は希土類系永久磁石の表面素地よりも電位が卑であるので、これらの金属微粒子を分散させた樹脂被膜を希土類系永久磁石の表面に形成した場合、樹脂被膜中の金属微粒子が電気化学的犠牲防食作用を発揮することで、被膜全体として希土類系永久磁石に高耐食性を付与することができる。また、絶縁性の付与を目的とする場合、SiO2和al.2O.3などの金属酸化物の微粒子を樹脂被膜中に分散させればよい。また、アナターゼ型TiO2微粒子を樹脂被膜中に分散させれば、希土類系永久磁石に光触媒機能を付与することができる。\n\n【0008】\n\n無機質微粒子の平均粒径は0.01μm〜20μmであることが望ましい。平均粒径が0.01μm未満であると、無機質微粒子の凝集が起こりやすくなるので、個々の粉体中において無機質微粒子を均一分散させることが困難になり、ひいては希土類系永久磁石の表面に無機質微粒子が均一分散した樹脂被膜を形成することが困難になることで希土類系永久磁石に高耐食性を付与することができなくなる恐れがあるからである。一方、平均粒径が20μmを超えると、形成される被膜の膜厚が厚くなりすぎることから、優れた寸法精度を有する小型磁石の提供や磁石の有効体積の確保が困難になる恐れがあるからである。\n\n【0009】\n\n粉体塗料の構成成分となる樹脂としては、エポキシ樹脂、アクリル樹脂、ポリエステル樹脂、ポリアミド樹脂、ポリイミド樹脂、ポリアミドイミド樹脂など、一般的に粉体塗料の構成成分として使用される樹脂が挙げられるが、中でもエポキシ樹脂は耐食性や取扱性の点で優れた樹脂であり、ポリイミド樹脂は絶縁性や耐ガス性や耐熱性の点で優れた樹脂であることから、これらの樹脂は本発明において好適に採用される。\n\n【0010】\n\n粉体塗料中における無機質微粒子の含有量は25重量%〜95重量%であることが望ましい。25重量%未満であると、樹脂被膜中に無機質微粒子を分散させることによる効果が十分に発揮されない恐れがある一方、95重量%を超えると、樹脂被膜の本質的な機能が損なわれたり、被膜の平滑性が損なわれたりすることで、希土類系永久磁石に目的とする機能を付与することができなくなる恐れがあるからである。\n\n【0011】\n\n無機質微粒子と樹脂とからなる粉体塗料は、自体公知の粉体塗料製造技術、即ち、例えば\n\n、原料となる無機質微粒子と樹脂に、必要に応じて、樹脂硬化剤(エポキシ樹脂を採用する場合には芳香族アミンや酸無水物やジシアンジアミド誘導体などが一般的に使用される)、各種の添加剤、触媒などを均一混合した後、溶融分散、冷却、粉砕、篩分工程を経て製造される。このようにして製造される粉体塗料の平均粒度は10μm〜50μmであることが望ましい。理由は、後述するように、希土類系永久磁石の表面に形成される無機質微粒子分散樹脂被膜の膜厚は10μm〜50μmであることが望ましく、このような膜厚の被膜を形成するのに都合がよいからである。\n\n【0012】\n\n無機質微粒子と樹脂とからなる粉体塗料を使用した静電粉体塗装は、自体公知の静電粉体塗装技術によって行えばよい。また、例えば、特開平11-57592号公報に記載された電解流動静電粉体塗装技術によれば、希土類系永久磁石の表面全体に無機質微粒子分散樹脂被膜を均一に形成することができる。このようにして形成される無機質微粒子分散樹脂被膜の膜厚は10μm〜50μmであることが望ましい。膜厚が10μm未満であると、無機質微粒子分散樹脂被膜としての性能が十分に発揮されない恐れがある一方、膜厚が50μmを超えると、優れた寸法精度を有する小型磁石の提供や磁石の有効体積の確保が困難になる恐れがあるからである。\n\n【0013】\n\nなお、本発明の方法によって形成された無機質微粒子分散樹脂被膜を表面に有する希土類系永久磁石は、例えば、エポキシ系接着剤やアクリル系接着剤などの有機系接着剤を使用して磁気回路などの装置に組み込まれて使用されるが、樹脂被膜中に無機質微粒子を分散させると、樹脂被膜の表面の濡れ性やアンカー効果が向上するので、本発明の製造方法によれば、樹脂被膜と有機系接着剤との優れた接着性を獲得することもできる。\n\n【0014】\n\n【例子】\n\n本発明を以下の実施例によってさらに詳細に説明するが、本発明はこれに限定して解釈されるものではない。\n\nなお、以下の実験は、例えば、米国特許4770723号公報や米国特許4792368号公報に記載されているようにして、公知の鋳造インゴットを粉砕し、微粉砕後に成形、焼結、熱処理、表面加工を行うことによって得られた14Nd-79Fe-6B-1Co組成(at%)の縦15mm×横10mm×高さ2mm寸法の焼結磁石(以下、磁石体試験片と称する)を使用して行った。\n\n【0015】\n\n例1:\n\n公知の粉体塗料製造技術に従い、ビスフェノールA型エポキシ樹脂(エピコート1002:油化シェル社製)13重量%と、樹脂硬化剤であるジシアンジアミド誘導体(アラルダイトHT-2844:旭チバ社製)7重量%と、平均粒径が4μmの亜鉛微粒子(ジンクダスト♯3:堺化学社製)80重量%を均一混合した後、溶融分散、冷却、粉砕、篩分工程を経て、亜鉛微粒子の含有量が80重量%であって平均粒度が25μmの粉体塗料を製造した。\n\n公知の静電粉体塗装技術に従い、エタノール中で3分間超音波洗浄を行って表面脱脂した後、真空中にて100℃で10分間乾燥した磁石体試験片の表面に、静電塗装ガンによりマイナスに帯電させた粉体塗料を静電引力で塗着させた後、大気中にて180℃で15分間熱処理を行って焼付けし、磁石体試験片の表面に膜厚が約30μmの亜鉛微粒子分散エポキシ樹脂被膜(被膜中における亜鉛微粒子の分散量は80重量%)を形成した。\n\n以上のようにして得られた亜鉛微粒子分散エポキシ樹脂被膜を表面に有する磁石体試験片に対し、35℃の5%塩水を噴霧する耐食性試験を行ったところ、100時間経過後においても発錆は観察されなかった(n=10)。\n\n【0016】\n\n比较例1:\n\nエタノール中で3分間超音波洗浄を行って表面脱脂した後、真空中にて100℃で10分\n\n間乾燥した磁石体試験片の表面に、平均粒径が4μmの亜鉛微粒子を含有するエポキシ樹脂塗液(エポローバル:ローバル社製)をスプレー塗装法によって塗布した後、大気中にて180℃で15分間熱処理を行って焼付けし、磁石体試験片の表面に膜厚が約30μmの亜鉛微粒子分散エポキシ樹脂被膜(被膜中における亜鉛微粒子の分散量は96重量%)を形成した。\n\n以上のようにして得られた亜鉛微粒子分散エポキシ樹脂被膜を表面に有する磁石体試験片に対し、35℃の5%塩水を噴霧する耐食性試験を行ったところ、全てのサンプルにおいて48時間経過後に発錆が観察された(n=10)。\n\n【0017】\n\n比较例2:\n\n公知の静電粉体塗装技術に従い、エタノール中で3分間超音波洗浄を行って表面脱脂した後、真空中にて100℃で10分間乾燥した磁石体試験片の表面に、静電塗装ガンによりマイナスに帯電させたエポキシ樹脂からなる粉体塗料(ビリューシアEP1000:日本ペイント社製)を静電引力で塗着させた後、大気中にて180℃で15分間熱処理を行って焼付けし、磁石体試験片の表面に膜厚が約30μmのエポキシ樹脂被膜を形成した。\n\n以上のようにして得られたエポキシ樹脂被膜を表面に有する磁石体試験片に対し、35℃の5%塩水を噴霧する耐食性試験を行ったところ、全てのサンプルにおいて24時間経過後に発錆が観察された(n=10)。\n\n【0018】\n\n実施例1および比較例1において形成された亜鉛微粒子分散エポキシ樹脂被膜は、被膜中に水分が浸入した場合、希土類系永久磁石の表面素地と亜鉛微粒子との間で腐食電池が形成され、希土類系永久磁石の表面素地よりも電位が卑な亜鉛微粒子が希土類系永久磁石に代わって腐食する、即ち、亜鉛微粒子が電気化学的犠牲防食作用を発揮することに加え、溶出した亜鉛が水分や炭酸ガスなどと反応して生成した亜鉛化合物が被膜表面や被膜中に存在する空隙を埋め尽くして被膜を緻密化することで外部からの腐食因子の浸入を阻止し、よって、被膜全体として高耐食性を希土類系永久磁石に付与するものである。\n\nここで驚くべきことに、実施例1において形成された亜鉛微粒子分散エポキシ樹脂被膜の方が比較例1において形成された亜鉛微粒子分散エポキシ樹脂被膜よりも亜鉛微粒子の分散量が少ないにもかかわらずより高い耐食性を希土類系永久磁石に付与することができた。このような結果になった理由としては次のような要因が考えられる。即ち、比較例1の亜鉛微粒子分散エポキシ樹脂塗液中の亜鉛微粒子は、エポキシ樹脂で被覆されたような状態で存在するので、形成された被膜中においては、希土類系永久磁石の表面素地と亜鉛微粒子との接触部が比較的少ないと思われる。しかしながら、実施例1の粉体塗料では個々の粉体の表面に亜鉛微粒子が露出して存在しており(この事実は粉体塗料の表面EPMA分析にて本発明者が確認している)、このような粉体塗料を使用して静電粉体塗装により形成された被膜中においては、希土類系永久磁石の表面素地と亜鉛微粒子との接触部が多いと思われ、よって、亜鉛微粒子の電気化学的犠牲防食作用が如何なく発揮されたことが考えられる。また、希土類系永久磁石の表面素地と亜鉛微粒子との接触部が多いことは、磁石の表面に対する被膜の密着性を向上させ、磁石の表面への水分の到達を効果的に阻止することに寄与していると考えられる。さらに、比較例1においては、熱処理による樹脂被膜形成過程において有機溶剤が被膜から蒸発することで被膜にピンホールが発生することが考えられるが、有機溶剤を使用しない実施例1においては原理上このような現象が起こらないことも要因の一つとして考えられる。\n\n【0019】\n\n【发明效果】\n\n本発明によれば、高耐食性や絶縁性などの各種機能を希土類系永久磁石に付与することができる、公害問題がなく、地球環境に優しい永久磁石の製造方法が提供される。');
INSERT INTO `os_patent_instruction_text` VALUES (12945, 22774, '【0001】\n\n【発明の属する技術分野】\n\n本発明は、MR(Magnetoresistive)ヘッド、GMR(Giant Magnetoresistive)ヘッド、MRAM(Magnetic Random Access Memory)等の製造プロセスにおいて、これらを形成するためのウェハ基板等を磁場中で熱処理する炉、及びそれを用いた熱処理方法に関する。\n\n【0002】\n\n【従来の技術】\n\n磁気ヘッドは一般に基板上に複数の強磁性層が積層された構造を有する。例えばGMRヘッドは強磁性層間に非磁性絶縁層が形成された構造を有する。またMRAMヘッドは基板側から順に反強磁性層、固定磁性層、非磁性導電層及びフリー磁性層とした構造を有する。固定磁性層は全体的に一方向に磁化されている。\n\n【0003】\n\n固定磁性層を一方向に磁化するためには、基板上に磁性薄膜を形成した後、磁場中で熱処理を行なう必要がある。通常0.5 T(テスラ)以上の配向磁場を印加する必要があり、固定磁性層の材質によっては1.0 Tを超える配向磁場が必要である。ウェハ基板に配向磁場を印加しながら熱処理するために、図15や特開2001-135543号公報に示すような真空熱処理炉がある。この真空熱処理炉は、冷却管112を備えた磁場発生用コイル113と、コイル113の内側に設けられた高周波コイル114と、高周波コイル114の内側に設けられた複数のウェハ基板110を保持する真空容器106とからなる。\n\n【0004】\n\nしかしながら、この磁場中熱処理炉の磁場発生手段は電磁石からなり、1.0 T以上の磁場を発生するためにはコイルに500〜800Aという大電流を流す必要があり、安全性の面から好ましくない。また大電流を用いるための設備が必要であるのみならず、磁場発生用に高額の電気代がかかり、また大電流により発生した熱を除去するために大量の冷却水を使用しなければならない。これらのために処理コストは高くならざるを得ない。さらに上記構成では漏洩磁束が非常に大きいために、人体に与える危険性を考慮すると設備スペース以外に安全確保のための大きな空きスペースを作らねばならないだけでなく、周囲の電子機器への影響を抑えるため装置を鉄やパーマロイ等の磁性体で囲う必要がある。\n\n【0005】\n\n超伝導コイルを用いると、大量の電力を使用しないで磁場を発生させることができる。超伝導コイルを用いる場合、電磁石に比べ励磁電流消費は抑えられるものの、超伝導状態を維持するため液体窒素又はヘリウムを常時消費しなければならず、運転コストが高い。また超伝導コイルを用いる方式では、磁場が変動すると局部的に超伝導状態が常伝導状態になってコイルが発熱し、放置すると装置全体の超伝導状態がくずれてしまう。さらに超伝導コイルは数T〜数10 Tの強磁場を発生できるが、電磁石と同様にその磁場強度に比例して強い漏洩磁場の範囲も広くなる。そのため、電磁石と同じ漏洩磁場の問題がある。\n\n【0006】\n\n励磁電流を使用しないで磁場強度を得るものとして、例えば”Journal of Applied Physics Vol. 86, No. 11, 1 December 1999” 及び “Journal of Applied Physics Vol. 64, No. 10, 15 November 1988”、及び特開平6-224027号に開示されたハルバッハ型磁気回路がある。このハルバッハ型磁気回路は磁化方向が異なる複数の永久磁石を組み合わせて合成磁場に方向性を持たせることができる。\n\n【0007】\n\n【発明が解決しようとする課題】\n\n被熱処理品が磁気抵抗膜を有するウェハ基板の場合、磁気抵抗効果を安定的に向上させるためには通常1.0 T以上と大きな磁場が必要であるのみならず、磁場を磁性膜の磁化方向に対して平行かつ均一にする必要がある。しかしながら従来の電磁石を有する熱処理炉では、磁性膜と平行な均一磁場を発生させることができなかった。\n\nまた、ハルバッハ型磁気回路をこのような熱処理炉に用いた例はなく、効率化の面や磁気回路の構成等についての具体的な検討がなく技術的な問題があった。\n\n【0008】\n\n本発明の目的は、1.0 T以上の均一な平行磁場を発生する磁気回路を用いて安全性が高く小型で高精度の磁場中熱処理炉を提供することである。\n\n本発明のもう一つの目的は、かかる磁場中熱処理炉を用いた被熱処理品の磁場中熱処理方法を提供することである。\n\n【0009】\n\n【課題を解決するための手段】\n\n複数の被熱処理品を一度に磁場中熱処理する場合、被熱処理品を加熱する手段の外周に空冷、水冷、ヒートシンクなどの冷却手段を設けること、磁場発生手段として永久磁石セグメントを用いたハルバッハ型磁気回路とすること、望ましい永久磁石セグメントの分割数があること、磁気回路の軸方向長さが一定以上必要であること、磁場発生手段と被熱処理品の望ましい相対位置関係があること等の知見により、熱処理中被熱処理品の径方向に高精度で均一な平行磁場を印加することができることを発見し、本発明に想到した。\n\n【0010】\n\n本発明の磁場中熱処理炉は、異なる磁化方向を有する永久磁石セグメントを隣接させてリング状に組み合わせ、そのリング状に組み合わせたものの中央空洞部の直径方向に磁束が流れるようにした1つのリング状永久磁石組立体からなる磁場発生手段と、前記リング状永久磁石組立体の中央空洞部内に配置されるとともに、前記中央空洞部内の外周側から順に、冷却手段と、加熱手段と、複数の被熱処理品を保持する熱処理用保持具を含む熱処理容器とを備えた熱処理手段とを具備し、\n\n前記リング状永久磁石組立体は120mm以上の内径、300mm以上の外径及び400mm以上の軸線方向長さを有し、前記リング状永久磁石組立体を構成する各永久磁石セグメントは1.1T以上の残留磁束密度及び1114kA/m(14kOe)以上の保磁力を有し、前記中央空洞部の直径方向に1.0T以上の平行磁場を発生させるとともに前記中央空洞部における磁場均一度を15%以内にしたことを特徴とする。\n\n【0011】\n\n前記磁場中熱処理炉において、熱処理容器は真空容器であることが好ましい。\n\n前記磁場中熱処理炉において、前記冷却手段は前記磁場発生手段の少なくとも表面温度を80℃以下に冷却する能力を有していることが必要である。\n\n前記冷却手段は冷却液が流れる冷却管と、前記冷却管の外周で前記リング状永久磁石組立体の内側に設けられたヒートシンク部材とを有することが好ましい。\n\n前記磁場中熱処理炉において、磁束密度の均一度が10%以内の磁場中で熱処理を行うために前記磁場発生手段の軸線方向磁場中心と、前記熱処理容器内に挿入される複数の被熱処理品の集合体の軸線方向中心とがほぼ一致しており、前記リング状永久磁石組立体の軸線方向長さを500mm以上にすることにより前記中央空洞部における磁場均一度を10%以内及び磁場のねじれ(スキュー)角を2度以内にすることが好ましい。\n\nリング状永久磁石組立体の磁極分割数は、中央空洞部に発生する磁場精度(磁場のねじれ、均一性)の点から12分割以上が好ましい。磁石の製造コストや組立性から12分割が最も好ましい。\n\nまた、漏洩磁束を低減するためには前記リング状永久磁石組立体は半径方向の外側ほど軸線方向に短いのがより好ましい。\n\n前記リング状永久磁石組立体の軸線方向長さHと外径Dとは2≦D/H≦10の要件を満たすのが好ましい。\n\n【0012】\n\n本発明の磁場中熱処理方法は、異なる磁化方向を有する永久磁石セグメントを隣接させてリング状に組み合わせ、そのリング状に組み合わせたものの中央空洞部の直径方向に磁束が流れるようにした1つのリング状永久磁石組立体からなる磁場発生手段と、前記リング状永久磁石組立体の中央空洞部内に配置されるとともに、前記中央空洞部内の外周側から順に、冷却手段と、加熱手段と、複数の被熱処理品を保持する熱処理用保持具を含む熱処理容器とを備えた熱処理手段とを具備する磁場中熱処理炉を用いて、複数の被熱処理品\n\nを同時に熱処理する方法であって、\n\n前記リング状永久磁石組立体は120mm以上の内径、300mm以上の外径及び400mm以上の軸線方向長さを有し、前記リング状永久磁石組立体を構成する各永久磁石セグメントは1.1T以上の残留磁束密度及び1114kA/m(14kOe)以上の保磁力を有し、前記中央空洞部の直径方向に1.0T以上の平行磁場を発生させるとともに前記中央空洞部における磁場均一度を15%以内にしたものであり、\n\n複数の前記被熱処理品を積み重ねた熱処理用保持具を前記熱処理容器内に挿入し、前記リング状永久磁石組立体の中央空洞部内に位置せしめ、前記中央空洞部内に所定の磁場を存在させた状態で、前記加熱手段により前記熱処理容器内の被熱処理品を熱処理するとともに、前記冷却手段により前記磁場発生手段を冷却し、前記被熱処理品の熱処理が完了後、複数の熱処理品を前記熱処理容器から取り出すことを特徴とする。\n\n【0013】\n\n本発明の方法において、前記被熱処理品が表面に磁性膜を形成したウェハ基板である場合は、熱処理前の磁性膜に印加された磁気的な影響を除去するために磁性膜の磁気特性が無くなる温度(強磁性膜ではキュリー点及び反強磁性膜ではネール点)以上まで加熱することが好ましい。\n\n本発明の方法において、複数の前記被熱処理品の集合体の軸線方向中心が前記磁場発生手段の軸線方向磁場中心とほぼ一致する位置で、前記被熱処理品集合体を前記熱処理容器内に保持することが好ましい。\n\n本発明の方法において、前記熱処理容器内を実質的に真空にした状態で熱処理を行うことが好ましい。\n\n本発明の方法において、前記磁場発生手段の表面温度を80℃以下に冷却することが好ましい。\n\n【0014】\n\n本発明において、リング状永久磁石組立体を構成する各永久磁石セグメントが12分割で構成され、軸方向長さが400mm以上あるリング状永久磁石組立体による磁場発生手段を有し、リング状永久磁石組立体の中央空洞部内に挿入する被熱処理品をウェハ基板となし、当該ウェハ基板に形成された反強磁性または磁性膜について、その磁気特性が無くなる温度(キュリー温度またはネール温度)以上まで加熱し熱処理を行うための磁場中熱処理炉とその磁場中熱処理方法とするのが好ましい。\n\n【0015】\n\n【発明の実施の形態】\n\n以下、本発明の技術手段と実施形態についてさらに説明する。\n\n図1に示すように、本発明の磁場中熱処理炉は、熱処理容器6と加熱手段5からなる熱処理手段の外周に、冷却手段3を介してリング状永久磁石組立体1を設けてなるので、軸(高さ)方向の比較的限られた範囲に対して水平面内で一方向の均一磁場を低コストで安定的に発生させることができる。これによって、比較的薄くて大径(例えば6-8インチ又はそれ以上)の磁性膜ウェハ基板Aを複数枚一度に熱処理するのに好適である。ここで被熱処理品は熱処理開始前から均一な平行磁場に配置されて磁性膜に均一な方向に磁気的な異方性を持たせることができる。最終的にはウェハ基板に形成された反強磁性膜または磁性膜について、その磁気特性が無くなる温度(キュリー温度またはネール温度)以上まで加熱し熱処理を行うため、当初磁場中に挿入配置されたときの磁場の影響は実質的には関係ない。\n\n上記リング状永久磁石組立体1は互いに異なる磁化方向に配向した複数の永久磁石セグメントをリング状に組み合わせたものである。永久磁石セグメントが特にNd-Fe-B系希土類永久磁石を用いるものは熱による減磁などの影響が大きいため、磁気特性を変動させないようにするためには磁場発生手段の表面温度が80℃以下になるように冷却構造や断熱構造を永久磁石に対して働くように加熱手段と磁場発生手段の間に設置することが有効であり、これにより中央空洞内の磁場特性を一定に保つことができ、安定した熱処理性能を得ることが出来る。\n\n【0016】\n\nリング状永久磁石組立体1は、中央空洞部内に直径方向に磁束が流れるように構成している。中央空洞部内に流れる磁束の磁場精度(均一度及び磁場のねじれ)は、リング状永久磁石組立体1の内径と外径及び軸方向長さ(高さ)によりほぼ決まる。ここで、熱処理すべきウェハの直径を例えば30 mmとすると、ウェハ外周と真空容器6の内壁との隙間を10 mm確保する場合、真空容器6の内径は50 mmとなる。真空容器6の壁厚は例えば5 mmであり、ヒータ5の厚さは例えば5 mmであり、冷却手段3の厚さは例えば20 mmであるので、各部材間のクリアランスの合計を10 mmとして、リング状永久磁石組立体1の内径は120 mmである。また、永久磁石の残留磁束密度Brが1.45 Tとすると、中央空洞部20内の磁場強度が1 Tを超えるには、図5に示すようにリング状永久磁石組立体1の内径D0が120 mmの場合に、リング状永久磁石組立体の外径Dは300 mm以上であるのが好ましく、またその軸線方向長さHは100 mm以上であるのが好ましいことが分かる。磁場強度をシミュレーションにより計算した結果、図5に示すように磁場強度はリング状永久磁石組立体1の軸線方向長さに応じて変化し、リング状永久磁石組立体1が軸線方向長さが短くなると中央空洞部20内の磁場強度は小さくなることが分かった。この結果から分かるように、中央空洞部20内の磁束密度を1 T以上とするためには、軸線方向長さは最低でも100 mm以上は必要である。\n\n図6に軸線方向長さと中央空洞部20内の磁場均一度の関係を示すシミュレーション結果を示す。この例ではリング状永久磁石組立体1の内径D0は200 mm、外径を右上に示す300〜1000mmに変えた場合のものである。図6は上記の結果を支持しており、軸線方向長さに応じて磁場均一度も向上することが分かる。例えば外径に関係なく軸線方向長さを400mm以上にすることにより磁場均一度は15%以内、500mm以上で10%以内にでき、磁場のねじれ(スキュー)角は2度以内にできる。\n\n【0017】\n\n他方、リング状永久磁石組立体1に使用する永久磁石は、1.1T以上の残留磁束密度及び1114kA/m(14kOe)以上の保磁力を有し、かつ軸線方向長さHと外径Dとは2≦D/H≦10の要件を満たすのが好ましい。この比D/Hが大きいほど、均一な磁場が軸線方向により広範囲に発生する。この範囲内であれば、リング状永久磁石組立体1全体の重量を少なくして大きな磁場を発生させることができる。\n\nまた、漏洩磁束を低減するために、リング状永久磁石組立体1を半径方向の外側ほど短くすることにより、軸線方向の漏洩磁場をより低減できることが分かった。このような構造により、リング状磁気回路の漏洩磁束を小さくすることができ、磁気回路の小型化及び軽量化が可能となる。\n\n【0018】\n\n本発明の磁場中熱処理炉において、熱処理手段は、図1に示すように鏡面を有するケース内に設けられた冷却管4を有する冷却手段3と、石英ガラス内に埋設された電気ヒータ等からなる加熱手段5と、透明な石英ガラスからなる真空容器6とを具備し、真空容器6内には被熱処理品Aを複数枚載置した熱処理用保持具10が挿入される。この熱処理手段により、リング状永久磁石組立体1からなる磁場発生手段の磁場中心と被熱処理品A集合体の中心を一致させ易い。また加熱手段5と磁場発生手段との間に冷却手段3があるので、磁場発生手段の表面温度を80℃以下にして永久磁石への熱影響が遮断される。そのため被熱処理品である磁性膜のキュリー温度及びネール温度により異なるが、概略300〜500 ℃前後の熱処理温度にもかかわらず、永久磁石は熱劣化しない。なお熱処理手段を窒素ガス等の非酸化性雰囲気下に置いても良い。\n\n【0019】\n\nリング状永久磁石組立体1に用いる永久磁石としては、Baフェライト系磁石、Srフェライト系磁石、La及びCo添加のフェライト系磁石等のフェライト磁石の他に、Nd-Fe-B系磁石、Sm-Co系磁石、Sm-Fe-N系磁石等の希土類系磁石等が挙げられるが、特に高い残留磁束密度を有するNd-Fe-B系磁石が好ましい。永久磁石は焼結磁石に限らずボンド磁石でも良い。Nd-Fe-B系磁石は耐熱温度が低いので従来の熱処理炉に用いるのは困難であったが、熱処理手段と磁場発生手段との間に冷却手段3を設けることにより本発明の磁場中熱処理炉\n\nに適用可能になった。\n\n【0020】\n\n以下、本発明を図面に示す実施例に基づいて説明する。\n\n(実施例1)\n\n図1に示す本発明の磁場中熱処理炉の磁場発生手段は、リング状永久磁石組立体1を構成する永久磁石セグメントをいずれも1.4 Tの残留磁束密度及び1192 kA/mの保磁力を有するNd-Fe-B系永久磁石により形成した。図2はリング状永久磁石組立体1の横断面構造を示す。\n\nこの例では、リング状永久磁石組立体1は、磁化方向が異なる3種類の扇状永久磁石セグメント11, 12, 13を周方向に全部で12個配列することにより形成されている。扇状永久磁石セグメント11, 12, 13は同一形状を有するので、扇形の中心角は30°、また磁極の磁化方向位相角は60°である。なお各永久磁石セグメント11, 12, 13の水平断面形状を扇形とする代わりに、台形にしても良い。\n\nリング状永久磁石組立体1における複数の永久磁石セグメントは、磁化方向が磁束の流れとほぼ一致するとともに、中央空洞部内を直径方向に磁束が流れるようにリング状に組み合わされている。このため、リング状永久磁石組立体1の合成磁場(矢印で示す)は中央空洞部20に半径方向に印加される。\n\nこの例では、リング状永久磁石組立体1の内径D0は350 mm、外径Dは900 mm、軸方向長さ(高さ)Hは600 mmであった。\n\n【0021】\n\n本実施例の熱処理手段は、鏡面となるように内面をメッキ処理したステンレス板を有する水冷手段3と、真空容器6内の被熱処理品Aを加熱する電気ヒータ5と、電気ヒータ5の内側に設けられた内径約220 mmの石英ガラスからなる真空容器6とを具備する。水冷手段3内に冷却管4が備えられている。水冷手段3は水冷管4の他にヒートシンク板を有しても良く、ヒートシンク板は水冷管4とリング状永久磁石組立体1との間に設けられる。真空中の加熱は主として輻射熱によるため、真空容器6を構成する石英ガラスは透明であるのが好ましい。被熱処理品Aとして6〜8 インチのウェハ基板が想定されることから、真空容器6の内径は170〜220 mmであるのが好ましい。\n\n真空容器6の一端はシール部材7により密封され、他端はシール用雄ネジ部8とシール用雌ネジ部9により密封されている。シール用雌ネジ部9の軸19には被熱処理品Aを真空容器6のほぼ中央部に保持するための熱処理用保持具10が備えられている。\n\n熱処理用保持具10は、例えば磁性膜が形成されたウェハ基板を載置するためのトレーを約3〜6 mm間隔で25枚程度軸線方向に配置した構造を有する。熱処理用保持具10は真空容器6内で水平面内に回転自在である。磁場印加方向調整のために被熱処理品Aが合成磁場と常に同方向となるように熱処理用保持具10を回転させるのが好ましい。\n\n熱処理用保持具10の上端、中央及び下端に備えられた熱電対により温度を測定し、電気ヒータ5の温度をPID制御する。シール部7には吸気口が備えられている。排気口は真空容器6上部に設けられ真空ポンプ(図示せず)と接続しており、真空容器6内を真空状態に維持する。例えば、被熱処理品Aが磁性薄膜を形成した基板の場合、約1×10-5〜1×10-6Paの真空状態で熱処理するのが好ましい。吸気口は窒素ガスボンベと接続されており、必要に応じて真空容器6内を不活性雰囲気にする。\n\n複数の強磁性層膜と反強磁性層膜に非磁性絶縁層を介して積層した磁性膜を備えた複数のウェハ基板を熱処理用保持具10のトレー上に配列し、真空容器6内に挿入する。このとき、積み重ねた基板全体の中心をリング状永久磁石組立体1の軸方向長さの中心と一致させる。\n\nシール用雄ネジ部8にシール用雌ネジ部9を螺着させて真空容器6内を気密状態にした後、真空ポンプにより真空容器6内を排気し、1×10-5〜1×10-6Paの真空度とした。\n\n【0022】\n\n次に、図14の熱処理工程図で示すように電気ヒータ5により300℃まで200℃/minで加熱する。他方冷却管4には冷却水を流しリング状永久磁石組立体1の電気ヒータ側の外周表面温度を80℃以下に維持する。300℃にウェハ基板を保ちながらウェハ表面に酸化膜が生成\n\nしないように窒素ガスをパージし、ウェハ基板上に生成された強磁性膜のキュリー温度でかつ反強磁性膜のネール温度以上の温度、例えば300℃±3%の温度に30-60分間保持しアニールする。その後窒素ガスのパージと排気を行いながら真空容器6内の温度を80℃/minで冷却し、ウェハ温度が150℃以下になったところでウェハを炉内から取り出す。ここで、ウェハ温度が降温時、すなわちキュリー温度及びネール温度を通過するときに一方向に均一な磁場が印加されていれば、磁性膜はその方向に磁気的に配向し、その温度以下では磁性膜は磁場の影響は受けない。よって、当初空洞部内に磁場が存在していてもウェハの磁性膜にとって実質的な問題はない。\n\nなお本明細書において用語「磁場中熱処理」を用いているが、この熱処理は「アニーリング」と呼ぶことができるものである。\n\n【0023】\n\n次に表1から、中央空洞部20内の磁場は軸線方向磁場中心で± 5.7% 以内と均一であることが確認された。また図4に示すように、ウェハ基板が備えられるリング状永久磁石組立体の中央空洞部20の中心から半径100mm内の磁束密度Y成分の変化を見た。横軸は磁石厚みで軸線方向中心からの距離を示している。Y=0〜100mmの半径範囲内で1Tで且つ磁場均一度10%以内にあるのは± 100 mmの範囲であることが分かる。また最大地点(Y=100)では±120mmで10%以下の均一な磁場強度が得られた。各測定位置の磁場スキュー角度は全て2°以内であった。このような磁場中熱処理を行なったウェハ基板を用いて形成した磁気ヘッドの磁気特性は良好であり、不良率は0であった。\n\n磁気回路端面より軸線方向に350 mm離れた位置での漏洩磁場は10 m T以下と小さく、また磁気回路側面から1 m離れた位置での漏洩磁場も1 m T以下と小さかった。\n\n【0024】\n\n【表1】\n\n\n\n注 (1) 磁束密度の均一度は(Tmax- Tmin) / Tmaxにより算出。\n\n【0025】\n\n(実施例2)\n\nGMR薄膜用磁場中熱処理を行うため、1.40〜1.50Tの磁場を発生するためには磁場発生手段であるリング状磁石組立体を、内径220mm、外径900mm、軸方向長さ600mmにて円周方向に12分割した磁極で構成することにより、6インチのウェハ基板にて、ウェハ基板のスタック高さ160mmの範囲にて、磁場均一度3%以内、磁場のスキュー角(ねじれ角)1°以内を達成した。\n\n【0026】\n\n(比較例1)\n\nヒータを中央空洞部ではなく、軸方向でリング磁気回路外に出る位置に備えた。それ以外は実施例1と同様にして実験を行った。熱処理台の各位置において温度分布にバラツキが発生し、各磁気ヘッドの磁気特性にもバラツキが発生した。\n\n【0027】\n\n(比較例2)\n\n冷却管と断熱手段を外し、それ以外は実施例1と同様に実験を行なった。熱処理台の各位置において温度分布のバラツキは発生しなかったが、熱処理中のヒータの熱により内リン\n\nグ磁気回路の永久磁石が減磁してしまい、十分な磁場強度を得ることができなかった。\n\n【0028】\n\n(実施例3)\n\n図3では、リング状永久磁石組立体の軸線方向長さ(高さ)について半径方向の外側に向かって徐々に短くなる構成とした。この構造により、軸線方向の漏洩磁場をより低減することができる。これによりリング状永久磁石組立体の小型化及び軽量化が可能であり、磁場中熱処理炉全体を低くすることができる。\n\n【0029】\n\nリング状永久磁石組立体1の内径が大きくなるに従い、磁気回路の各永久磁石セグメントは一個の永久磁石片で構成することが困難となる。そのため、複数の永久磁石片を組み合わせて各永久磁石セグメントを構成するのが好ましい。リング状磁気回路の永久磁石セグメントの一例を図7に示す。この例では永久磁石セグメントは半径方向に配列された3つの永久磁石片からなるが、一般に2個以上の永久磁石片を使用すればよい。内側の永久磁石片は外半径Ra及び軸線方向長さLaを有し、中央の永久磁石片は内半径Ra、外半径Rb及び軸線方向長さLbを有し、外側の永久磁石片は内半径Rb、外半径Rc及び軸線方向長さLcを有する。各永久磁石片の軸線方向長さはLa > Lb > Lcであり、外側に向かって段々短くなる。\n\n【0030】\n\n図8は、第1の永久磁石片41及び第2の永久磁石片42を組み合わせた永久磁石セグメントの例を示す。図示の例では第1及び第2の永久磁石片41, 42をそれぞれ2つずつ組合せているが、奇数個組合せても良い。図中の矢印は各永久磁石片の磁化方向を示す。\n\n小さな永久磁石セグメントの場合、1個の永久磁石片で構成できる。漏洩磁場を低減するために、例えば図9(a)及び図9 (b)に示すように、永久磁石の軸線方向断面をほぼ台形にするのが好ましい。\n\n上記各実施例では、磁化方向が異なる3種類の永久磁石を組合せてリング状永久磁石組立体に使用したが、図10に示すように磁化方向が異なる2種類の永久磁石43, 44により磁気回路を構成することもできる。\n\n【0031】\n\nまた、このリング状永久磁石組立体は等分割された永久磁石セグメントの磁極をリング状に配置して構成されるが、この分割する磁極数は多いほど理想的なハルバッハ型磁気回路に近づくが、この磁気回路を製品化するにおいて無限に分割数を増やすことは磁極を構成する磁石において様々な種類の磁化方向をもつ磁石を製造しなくてはならないため、磁石の加工コストが増大し磁気回路の製造コストが高くなってしまう。\n\n図11は磁極分割数と磁場均一度の関係を示すシミュレーション結果である。縦軸に磁場均一度を、横軸に分割数を示している。リング状永久磁石組立体の中央空洞部の内径200mmの中心から直径120mm内の磁場均一度について調べた。軸方向高さは150mmから数種変化させ、また外径も数種変化させた。しかしその傾向は変わらなかった。このデータが示すように12分割以上では均一度の向上は見込めないことが分かった。\n\n図12は磁極分割数とスキュー角(ねじれ角)の関係を示すシミュレーション結果である。縦軸にスキュー角を、横軸に分割数を示している。リング状永久磁石組立体の中央空洞部の内径、外径、軸方向高さ等の条件は図11と同一としている。このデータが示すように12分割以上では均一度の向上は見込めないことが分かった。\n\n図13は中央空洞部の軸方向距離と磁束密度の関係を磁極数8個と12個の場合の比較を示す試験結果である。120 mmの内径及び200 mmの外径を有するリング状永久磁石組立体の中央空洞部の磁場(T)を空洞部中心からの距離をパラメータに測定した。縦軸に磁束密度を、横軸に中心からの軸線方向距離を示している。このデータより中央空洞部20の磁場は、一周の永久磁石セグメントの数が12個の場合は8個の場合よりも5%程度大きいことが分かった。\n\n以上のことより、磁気特性上や組立性などを含めたパフォーマンスから最適な分割数は12個である。\n\n【0032】\n\n【発明の効果】\n\n本発明の磁場中熱処理炉では、複数枚の磁性膜基板のような被熱処理品に均一な平行磁場を印加できるので、熱処理した磁性膜基板の品質が一様に安定する。本発明の磁場中熱処理炉はまた漏洩磁場が小さいため磁気シールドの必要性がなく、装置全体を小型化することができる。また磁場発生用電力を必要としないため、設備コスト及び運転コストを低減することができるのみならず、磁場発生用コイルの発熱に伴う問題もない。\n\nリング状永久磁石組立体の中央空洞部内に設ける冷却手段には、熱処理温度による永久磁石の特性劣化を起こさない量の冷却水を流せば良い。従って、本発明の磁場中熱処理炉は運転コストが低い。\n\nまた、磁場発生用コイルに通電する大電力が不必要であるため、電源設備コスト等が省け設置スペースも少なくて良い。さらには漏洩磁束は電流を用いて磁場を発生させるものより遥かに小さく、周囲の作業者に与える影響は皆無であり、製造工程におけるライン構成も容易になる。これらを加味すると設備コストのみだけではなく、ライン構成が容易でコンパクト、運転コストも大幅に低減できる省エネルギーな磁場中真空熱処理を提供できる。\n\n【図面の簡単な説明】\n\n【図1】本発明の磁場中熱処理炉の一例を示す要部断面図である。\n\n【図2】本発明の磁場中熱処理炉に用いるリング状永久磁石組立体の一例を示す要部横断面図である。\n\n【図3】リング状永久磁石組立体の他の例を示す要部断面図である。\n\n【図4】リング状永久磁石組立体の軸線方向に沿った中央空洞部内の磁場強度分布を示すグラフである。\n\n【図5】リング状永久磁石組立体の外径及び軸線方向長さに対する中央空洞部内の磁束密度の依存性を示すグラフである。\n\n【図6】リング状永久磁石組立体の軸線方向長さに対する中央空洞部内の磁場均一度を示すグラフである。\n\n【図7】複数の永久磁石片からなる永久磁石セグメントの一例を示す平面図及び断面図である。\n\n【図8】複数の永久磁石片からなる永久磁石セグメントの他の例を示す平面図である。\n\n【図9】永久磁石セグメントの断面形状の一例を示す平面図及び断面図である。\n\n【図10】磁化方向が異なる2種類の永久磁石からなるリング状永久磁石組立体の一例を示す平面図である。\n\n【図11】磁極分割数と磁場均一度の関係を示すグラフである。\n\n【図12】磁極分割数とスキュー角(ねじれ角)の関係を示すグラフである。\n\n【図13】周方向に8個の永久磁石セグメントからなるリング状永久磁石組立体と12個の永久磁石セグメントからなるリング状永久磁石組立体について、リング状永久磁石組立体の中央空洞部内の軸線上の磁束密度とリング状永久磁石組立体の中心からの軸線方向距離との関係を示すグラフである。\n\n【図14】磁場中熱処理の一例を示す工程図である。\n\n【図15】電磁石を有する従来の磁場中熱処理炉を示す概略断面図である。\n\n【符号の説明】\n\n1、1A:リング状永久磁石組立体、3:冷却手段、4:水冷管\n\n5:加熱手段(ヒータ)、6:熱処理容器(真空容器)、7:シール部\n\n8:シール雄ネジ部、9:シール雌ネジ部、10:熱処理用保持具\n\n110:保持部材、112:冷却構造、113:コイル、114:高周波コイル\n\n20:中央空洞部、11、12、13:永久磁石セグメント\n\n40:分割型永久磁石、41、42、43、44:セグメント磁石(小磁石)', '【0001】\n\n技术领域\n\n本发明,MR(磁阻)头部,GMR(巨磁阻)头部,MRAM(磁性随机存取存储器)等,用于热处理的热处理晶片基板等,及其本发明涉及一种用于形成它们的晶片基板等。使用热处理方法。\n\n【0002】\n\n发明背景\n\n磁头通常具有这样的结构,其中多个铁磁层层叠在基板上。例如,GMR头具有这样的结构,其中在铁磁层之间形成非磁性绝缘层。 MRAM头具有这样的结构,其中防陶芥子层,固定磁性层,非磁性导电层和自由磁性层由基板侧制成。固定磁性层通常在一个方向上磁化。\n\n【0003】\n\n为了在一个方向上磁化固定磁性层,在基板上形成磁性薄膜之后,必须在磁场中进行热处理。通常,需要施加0.5吨(Tesla)或更多的定向磁场,并且根据固定磁性层的材料,需要超过1.0 t的定向磁场。为了在将定向磁场施加到晶片衬底的同时进行热处理,存在真空热处理炉,如图15所示。15和日本专利申请公开No.2001-135543。该真空热处理炉保持一个磁场产生线圈113,磁场产生线圈113设置有冷却管112和设置在线圈113内部的高频线圈114,以及保持设置在高频线圈114内部的多个晶片板110的真空。a容器106由。\n\n【0004】\n\n然而,磁场中的热处理炉的磁场产生装置由电磁铁制成,并且为了产生1.0 t或更大的磁场,从表面上不优选为500至800a的大电流安全。此外,不仅需要使用大电流的设备,而且还必须用于磁场产生的高电量,并且必须使用大量的冷却水来除去高电流产生的热量。为此,处理成本必须高。此外,在上述配置中,由于泄漏磁通量非常大,因此不仅需要为设备空间制造用于保护安全性的大型空位空间,因为考虑到设备空间的风险,还可以减少影响在周围的电子设备上。因此,必须用诸如铁或渗透组织的磁体围绕装置。\n\n【0005】\n\n利用超导线圈,可以在不使用大量功率的情况下产生磁场。当使用超导线圈时,与电磁铁相比,可以抑制激发电流消耗,但是必须始终消耗液氮或氦以保持超导状态,并且操作成本高。此外,在使用超导线圈的方法中,当磁场波动时,局部传导超导状态,线圈产生热量,并留下整个装置的超导状态。此外,尽管超导线圈可以产生几十多个T的铁磁场,但是如在电磁铁中,强泄漏磁场的范围与其磁场强度成比例地宽。因此,存在与电磁铁相同的泄漏磁场的问题。\n\n【0006】\n\n励磁电视流を使用ししで磁场强度强度得るとして,例えば“应用物理卷。1999年12月11日,第11卷,第11卷”及び“应用物理卷。64,1988年11月15日第10号”,和JP-A-6-224027中公开的Halbach型磁路。 Halbach型磁路可以组合具有不同磁化方向的多个永磁体,以向合成磁场提供方向性。\n\n【0007】\n\n本发明要解决的问题\n\n在具有磁阻膜的晶片衬底的情况下,为了稳定地改善磁阻效果,不仅需要1.0吨或更大并且需要大的磁场,但是磁场用于磁膜的磁化方向。有必要平行和均匀。然而,在具有常规电磁铁的热处理炉中,不能产生平行于磁性膜的均匀磁场。\n\n另外,没有示例在其中用于这种热处理炉使用HALBACH型磁路,并且在不考虑效率的表面和磁路的结构的情况下存在技术问题。\n\n【0008】\n\n本发明的一个目的是使用磁路提供高度安全和高精度的磁场热处理炉,该磁路产生1.0tt或更大的均匀平行磁场。\n\n本发明的另一个目的是提供一种使用这种磁场使用热处理炉的热处理产品的磁场的热处理方法。\n\n【0009】\n\n[解决问题的手段]\n\n当多次在磁场中进行热处理多个热处理的产品时,冷却装置如空气冷却,水冷,散热器,例如加热,水冷,散热器等。它是一个电路,数字所需永磁体段的分割,并且磁路的轴向长度是一定水平所需的,并且磁场生成装置与热处理产品之间的所需位置关系是所需的相对位置关系。在热处理的热处理产品的径向中,发现可以施加高精度和均匀的平行磁场,并构思了本发明。\n\n【0010】\n\n本发明的磁场中的热处理炉是不同的磁化方向有永磁体段邻近的结合在环形,环形的中心腔一种磁场产生装置,由一个环状永磁体组件组成,使得磁通量在直径方向上流动,以及环状永磁组件的中心空腔随着那在中央腔外部圆周按照、设置有热处理容器的冷却装置,加热装置和热处理装置,包括保持多个热处理产品的热处理夹具死亡,\n\n环形永磁组件的内径为120mm或更大,外径为300mm或更大,轴向长度为400mm或更大,以及构成环形永磁组件的每个永磁段是1.1 T或更多残留物。它具有磁通密度和1114ka / m(14只koe)或更高的矫顽力,在中心腔的直径方向上产生1.0 t或更多的平行磁场,以及磁场中央空心部分的均匀性在15%以内。它的特点是。\n\n【0011】\n\n在磁场期间的热处理炉中,热处理容器优选为真空容器。\n\n在磁场中的热处理炉中,冷却装置需要能够冷却磁场产生装置的至少表面温度至80℃或更小。\n\n优选的是,冷却装置包括冷却管,冷却剂流过,以及在冷却管的外周上设置在环状永磁组件内的散热器构件。\n\n在磁场热处理炉中,为了在磁场内的磁场内的磁场内的10%内热处理,磁场产生装置的轴向磁场中心和插入的多个热量处理产品热处理容器轴颈的轴颈几乎匹配随着环状永磁组件的轴向长度为500mm或更大,中央腔中的磁场均匀性在10%之内,磁场的扭曲(歪斜)拐角在2度内。优选地。\n\n从中央空心部分产生的磁场精度(磁场的扭曲和均匀性)的观点来看,环形永磁组件的磁极分割的数量优选为12划分或更多。从磁铁的制造成本12分钟,最优选。\n\n此外,为了减少泄漏磁通,环状永磁组件径向的更优选地,轴向较短。\n\n优选地,轴向长度H和环状永磁组件的外径D满足2≤d/h≤10的要求。\n\n【0012】\n\n发明磁场热处理方法不同的磁化方向有永磁体段邻近的结合在环形,环形的中心腔一种磁场产生装置,由一个环状永磁体组件组成,使得磁通量在直径方向上流动,以及环状永磁组件的中心空腔随着那在中央腔外部圆周按照、使用磁场中的热处理炉的多个热处理产品,包括热处理装置,包括热处理容器,该热处理容器包括保持握住握住多个热处理夹具的热处理容器的热处理容器的热处理容器保持多个加热过程\n\n一种热处理方法,同时,\n\n环形永磁组件的内径为120mm或更大,外径为300mm或更大,轴向长度为400mm或更大,以及构成环形永磁组件的每个永磁段是1.1 T或更多残留物。具有磁通密度和1114ka / m(14ko)或更大的矫顽力,在中心腔的直径方向上产生1.0 t或更多的平行磁场,以及磁场均匀性中央腔在15%以内。是,\n\n具有多个热处理产品的热处理夹具插入热处理容器中并定位在环状永磁组件的中心空腔中。、在中央腔部分中存在预定磁场的状态下,通过加热装置热处理热处理容器中的热处理产品,并且通过冷却装置冷却磁场产生装置。、其特征在于,在完成热处理产品的热处理之后,从热处理容器中取出多个热处理产物。。\n\n【0013】\n\n在本发明中在方法中如果热处理产物是晶片基板,其中在表面上形成热处理产品,温度(使磁性膜的磁性特性消失的铁磁性膜以除去在热量之前施加到磁性薄膜的磁效果然后,治疗,在居里点和反铁磁膜中优选加热到钉点)或更高。\n\n在本发明中在方法中优选的是,热处理的产品组件在热处理容器中保持在多个热处理产物的组件的轴向中心基本上与磁场产生装置的轴向磁场匹配的位置。\n\n在本发明中在方法中优选在热处理容器内部基本上真空的状态下进行热处理。\n\n在本发明中在方法中,磁场产生装置的表面温度为80°C或更少冷却优选地。\n\n【0014】\n\n发明在,构成环状永磁组件的每个永磁体段由12个部门组成,并且具有由长度为400mm或更大的环状永磁组件的磁场产生装置,以及环形永磁体组装没有待插入中央中空部分的热处理处理的产物由晶片衬底制成,并且对于在晶片基板上形成的反铁磁体或磁性膜,通过加热至温度(居里温度或钉子)进行热处理温度)或更多。磁场磁场和热处理方法的热处理炉它是优选的。\n\n【0015】\n\n发明内容\n\n在下文中,将进一步描述本发明的技术装置和实施例。\n\n如图1所示。如图1所示,本发明的磁场中的热处理炉通过冷却装置3在热处理单元3的外周上设有环形永磁组件1,其由热处理制成容器6和加热装置5,使得提供环形永磁组件1。可以在相对于轴线(高度)的相对有限的范围内以低成本稳定地产生单向均匀磁场。方向。这适用于一次热处理多个磁膜晶片衬底A的多个磁膜晶片衬底A一次相对薄的磁膜晶片衬底A。这里,热处理产品可以在热处理开始之前设置在均匀的平行磁场中,以允许磁性各向异性均匀向磁膜。最后,对于在晶片基板上形成的反铁磁膜或磁性膜,消除温度(曲线温度或指甲温度)以进行加热以进行热处理,并且当进行热处理时,在初始磁场中布置在初始磁场中的影响磁场的基本上是相关的。\n\n环状永磁体组件1与以环形状以不同的磁化方向为定向的多个永磁体段组合。由于永磁体段特别受热电磁体的影响,例如ND-Fe-B基稀土永磁体,因此磁场产生装置的表面温度为80℃或更低,以防止磁特性。安装冷却结构和隔热结构是有效的,以相对于永磁体工作,这允许中心腔中的磁场特性保持恒定。可以获得稳定的热处理性能。\n\n【0016】\n\n环状永磁体组件1构造成使得磁通量在中心腔中的直径方向上流动。流入中心腔的磁通量的磁场精度(均匀性和磁场的捻线)几乎由环状永磁组件1的内径和外径和轴向长度(高度)决定。这里,当待热处理的晶片的直径是例如30mm时,当真空容器6的晶片外周和内壁之间的间隙是时,真空容器6的内径为50mm固定10毫米。真空容器6的壁厚例如为5mm,加热器5的厚度是例如5mm,并且冷却装置3的厚度例如为20mm,因此总计每个构件之间的间隙为10毫米。环形永磁组件1的内径为120mm。此外,当永磁体的残留磁通密度Br为1.45t时,中央腔20中的磁场强度超过1t,如图2所示。如图5所示,环形永磁组件的内径d 10如果环状永磁组件的外径D为120mm,则优选的是,环形永磁组件的外径D优选为300mm或更大,并且轴向长度H优选为100mm或更多的。作为通过模拟计算磁场强度的结果,如图2所示。如图5所示,根据环形永磁组件1的轴向长度,磁场强度变化,环形永磁组件1短在轴向方向上。发现中心腔20中的磁场强度变小。从该结果可以看出,为了将中心腔20到1 T或更大的磁通密度设定,轴向长度至少为100mm或更大。\n\n图。图6示出了示出轴向沿轴向长度与中心腔20中的磁场均匀性之间的关系的模拟结果。在该示例中,环形永磁组件1的内径d0是200mm,外径改变为300至1000mm的情况,如右上所示。图。图6示出了上述结果被支撑,并且根据轴向长度也改善了磁场均匀性。例如,通过在轴向400mm或更大的情况下设置轴向,无论外径如何,磁场均匀性都可以在15%以内,并且在500mm或更大的10%之内,以及扭曲(歪斜)角度磁场可以在2度内。\n\n【0017】\n\n另一方面,用于环状永磁体组件1的永磁体具有1.1 T或更高的残留磁通密度,矫顽力为1114ka / m(14只koe),以及轴长H和外径D优选满足2≤d/h≤10的要求。比/小时越大,沿轴向宽范围内发生均匀的磁场。在该范围内,可以减小环状永磁体组装1的重量以产生大磁场。\n\n此外,为了减小泄漏通量,环形永磁组件1径向的发现通过使外侧缩短,可以进一步降低轴向泄漏磁场。这种结构允许减小环形磁路的泄漏通量,并且可以降低磁路的尺寸和重量。\n\n【0018】\n\n在本发明的磁场中的热处理炉中,热处理装置由冷却装置3组成,冷却装置3具有设置在具有镜面的壳表面的冷却管4,如图1所示。1,以及嵌入的电加热器一种石英玻璃。提供由透明石英玻璃制成的加热装置5和真空容器6,以及放置多个热处理产品A的热处理保持器10插入真空容器6中。借助于该热处理装置,磁场生成装置的中心容易匹配由环形永磁组件1和装配剂处理产品的中心组成的磁场产生装置。此外,由于冷却装置3在加热装置5和磁场产生装置之间,因此磁场产生装置的表面温度在80℃或更小,并且挡板上的热效应被阻挡。因此,尽管取决于居里温度和磁性膜的磁性膜的灯光温度,但是尽管热处理温度为约300至500℃,但永磁体不会产生热劣化。热处理装置可以放置在非氧化气氛如氮气中。\n\n【0019】\n\n作为用于环形永磁组件1的永磁体,除了诸如BA铁氧体磁体的铁氧体磁体之外,SR铁氧体磁体,诸如铁氧体磁铁的铁氧体磁体,例如铁氧体基磁体,SM - 尽管虽然提到了基于Co基磁体和稀土基磁体,但是被提及诸如SM-Fe-N基磁体,但特别高的残余磁通密度优选为ND-Fe-B基磁体。永磁体不限于烧结磁体,而且是粘结磁体。由于ND-Fe-B基磁体具有低耐热温度,因此难以将其用在传统的热处理炉中,而是通过在热处理装置和磁场产生装置之间提供冷却装置3,本发明磁场的热处理炉\n\n它变得适用于。\n\n【0020】\n\n在下文中,将基于附图中所示的实施例描述本发明。\n\n(例1)\n\n图2中所示的本发明磁场的热处理炉的磁场产生装置。图1是具有1.4 T的残余磁通密度的Nd,以及1192k / m的矫顽力,具有构成环的永磁体段- 状永磁组件1. -FE-B由永磁体形成。图。图2示出了环状永磁组件1的横截面结构。\n\n在该示例中,环形永磁组件1通过在圆周方向上在圆周方向上布置三种类型的扇形永磁体段11,12和13而形成。由于扇形永磁区段11,12和13具有相同的形状,因此扇形中心角是30°,并且磁极的磁化方向相角为60°。注意,每个永磁区段11,12,13或13的水平横截面形状可以是梯形而不是扇形。\n\n环状永磁组件1中的多个永磁体段在环形中组合,使得磁通量在中央腔中的直径方向上流动,基本上与磁通量的流程一致。因此,环形永磁组件1的合成磁场(由箭头表示)径向施加到中心腔20。\n\n在该示例中,环形永磁组件1的内径d0350毫米,外径D为900 mm,轴向长度(高度)H为600mm。\n\n【0021】\n\n该实施例的热处理装置是水冷装置3,水冷装置3具有不锈钢板,其中镀在其中镀覆以镜面,以及用于在真空中加热热处理产品A的电加热器5的电加热器5容器6和电加热器5的内部提供了由大约220mm的石英玻璃组成的真空容器6,提供内径。冷却管4设置在水冷装置3中。除水冷管4之外,水冷装置3还可以具有散热片,并且散热板设置在水冷管4和环状永磁组件1之间。真空加热主要优选优选辐射热,并且构成真空容器6的石英玻璃优选是透明的。由于假设6至8英寸的晶片基板作为热处理产品A,因此真空容器6的内径优选为170至220mm。\n\n真空容器6的一端由密封构件7密封,另一端由密封的阳螺纹部分8和密封阴螺纹部分9密封以密封。密封阴螺纹部分9的轴19设置有热处理保持器10,用于在真空容器6的基本中心部分处保持加热热处理产品A.\n\n热处理保持器10具有用于安装晶片基板的托盘,其中形成磁性膜的托盘以约3至6mm的间隔放置在约3至6mm的间隔。热处理保持器10可在真空容器6中的水平面中旋转。优选的是旋转热处理保持器10,使得热处理产品A总是具有合成磁场,以便调节磁场施加方向。\n\n通过提供在热处理保持器10的上端的热电偶测量温度,提供在下端的热电偶,并且电加热器5的温度是PID控制。密封部分7设置有进气口。排气口设置在真空容器6的顶部上,并连接到真空泵(未示出),并将真空容器6的内部保持在真空状态。例如,在基材的情况下,其中热处理产品A由磁性薄膜形成约1×10-5〜1×10-6优选在Pa的真空中进行热处理。进气口连接到氮气气缸,如果需要,真空容器6是惰性气氛。\n\n设置有多个铁磁层膜中的非磁性绝缘层层叠的磁性膜的多个晶片基板和反铁磁层膜布置在热处理保持器10的托盘上并插入真空容器6中。此时,整个堆叠基板的中心与环状永磁组件1的轴向长度的中心一致。\n\n密封膜部分9拧到密封凸形螺纹部分8以进行密封后,真空容器6持久,然后真空泵在真空容器6,1×10中排出真空泵-5〜1×10-6PA的真空度。\n\n【0022】\n\n接下来,如图2的热处理处理图所示。如图14所示,电加热器5在200℃/min至300℃/米中加热至300℃。另一方面,冷却管4保持在环状永磁组件1的电加热器侧的外周表面温度,在80℃或更小。在晶片表面上形成氧化物膜,同时将晶片基板保持在300℃。\n\n吹扫氮气,以便不做并保持在晶片衬底上产生的铁磁膜的温度,并且在低于反铁磁膜的指甲温度的温度下,例如,在300℃±3%的温度下30-60分钟退火。此后,在80℃/米中冷却真空容器6中的温度,同时排气氮气的吹扫,当晶片温度变为150℃或更低时,将晶片从炉中移除。这里,当晶片温度透过时施加磁场以单向,即居里温度和指甲温度,磁膜在该方向上磁导向,低于该温度的温度是磁性的薄膜不会影响磁场。因此,即使最初存在在中空部分中的磁场,对于晶片的磁膜而言也没有实质的问题。\n\n尽管在本说明书中使用术语“热处理”,但是这种热处理可以称为“退火”。\n\n【0023】\n\n接下来,从表1中,确认中心腔20中的磁场在轴向磁场的中心的±5.7%内均匀。此外,如图4所示,从由晶片基板提供的环形永磁组件的中心腔部分20的中心腔部分20的中心观察到半径为100mm的磁通密度Y分量的变化。横轴表示与磁铁厚度的轴向中心的距离。可以看出,在y = 0至100mm的径向范围内,并且在磁场均匀的10%内在±100mm之内。另外,在最大点(Y = 100)处,获得均匀的磁场强度为10%或更小的±120mm。每个测量位置的磁场歪斜角度在2°内。使用通过这种磁场执行的晶片基板形成的磁头的磁性是好的,并且缺陷率为为零。\n\n距离磁路端面350mm的位置处的泄漏磁场小至10mt或更小,并且距离磁路侧的位置1m处的漏磁场也小于1 mt或较少的。\n\n【0024】\n\n【表格1】\n\n\n\n注意(1)磁通密度的均匀性(tmax-T.min/ T.max计算出\n\n【0025】\n\n(例2)\n\n为了在GMR薄膜的磁场期间进行热处理,环形磁体组件是磁场产生装置,内径为220mm,外径为900mm,轴向长度为600mm为了通过将磁极分成12英寸晶片衬底的磁极构成将1.40至1.50 t产生1.40至1.50 t的磁场,在晶片衬底的堆叠高度的范围内,堆叠中的160mm的范围内晶片基板的高度,在磁场的3%内,磁场(扭转角)的歪斜角度(扭曲角)1°实现。\n\n【0026】\n\n比较例1\n\n加热器不是中央腔,而是在轴向方向上沿轴向提供。除此之外,以与实施例1相同的方式进行实验。在热处理表的每个位置处的温度分布中发生变化,并且在每个磁头的磁性特性中发生变化。\n\n【0027】\n\n比较例2.\n\n除去冷却管和隔热装置,除了与实施例1中相同的方式进行实验。尽管在热处理台的每个位置处不发生温度分布的变化,但是在热处理期间加热器的热量插入热处理。\n\n几何电路的永磁体被剥离,无法获得足够的磁场强度。\n\n【0028】\n\n(例3)\n\n在图1中。在图3中,环状永磁组件的轴向长度(高度)的径向的它已经逐渐缩短到外面。该结构可以进一步减小轴向泄漏磁场。结果,可以小型化和减小环状永磁体组件,并减少磁场中的整个热处理炉。\n\n【0029】\n\n随着环形永磁组件1的内径增加,磁路的每个永磁体段变得难以由一个永磁件构成。因此,优选将多个永磁件组合以构成每个永磁体段。环形磁路的永磁段的一个例子如图2所示。在该示例中,永磁体段由三个径向布置的永磁件组成,但通常可以使用两个或更多个永磁件。内永磁件具有外半径Ra和轴向长度La,中央永磁件具有内半径Ra,外半径Rb和轴向长度LB,外部永磁件是内半径具有RB ,外半径RC和轴向长度LC。每个永磁件的轴向长度是LA> LB> LC,朝向外部变得更慢。\n\n【0030】\n\n图。图8示出了永磁体段的示例,其中组合第一永磁件41和第二永磁体42。在所示的示例中,第一和第二永磁件41和第二永磁件41和42组合为两个,但是可以组合奇数。图中的箭头表示每个永磁件的磁化方向。\n\n在小永磁体段的情况下,它可以配置有一个永磁件。为了减少泄漏磁场,例如,如图1和图2所示。如图9A和9B所示,优选使永磁体的轴向横截面大致梯形。\n\n在上述每个实施例中,组合具有不同磁化方向的三种类型的永磁体,并用于环形永磁组件,但如图10所示,如图10所示,两种类型的永磁体43,44具有不同的磁化方向也可以配置。\n\n【0031】\n\n此外,尽管通过在环形中布置相等分开的永磁段的磁极来构造环形永磁组件,但是待分割的磁极的数量越大,较近理想的哈巴赫型磁路。为了增加该磁路中的分裂的数量,不需要在构成磁极的磁体中制造具有各种类型的磁化方向的磁体的偏移,因此磁体的加工成本增加和磁性电路制造成本将很高。\n\n图。图11示出了示出磁极划分的数量与磁场均匀性之间的关系的仿真结果。垂直轴表示磁场均匀性的程度,横轴表示划分的数量。直径120mm的磁场均匀,从环状永磁组件的中心腔的中心腔的内径为200mm的中心检查。轴向高度从150 mm变为几种物种,外径也改变了几种。但那趋势没有改变。已经发现,随着该数据指示的数据,预期不能提高均匀性的提高。\n\n图。图12示出了示出磁极划分的数量与歪斜角度(扭转角)之间的关系的仿真结果。歪斜角度在垂直轴上示出,并且在水平轴上示出了划分的数量。环形永磁组件的中心中空部分的内径,外径,外径轴向高度的条件与图1中的相同。已经发现,随着该数据指示的数据,预期不能提高均匀性的提高。\n\n图。图13是表示中心腔的轴向距离的8或12的比较和磁通密度的测试结果。测量与120mm的内径为120mm的环形永磁组件的中心腔的中心的距离,并对参数测量200mm的外径。垂直轴表示磁通密度,从水平轴上的中心轴向距离。从该数据中,当永久性永磁体段的数量为12时,发现中心腔20的磁场为约5%以上的8例。\n\n从以上,从包括磁特性和组装的性能,最佳分裂数为12。\n\n【0032】\n\n【发明效果】\n\n在本发明的磁场中的热处理炉中,可以施加均匀的平行磁场,例如多个磁性膜基板,从而均匀稳定地稳定地稳定的热处理磁性膜基板的质量。本发明的磁场中的热处理炉还具有小的泄漏磁场,因此不需要磁屏蔽,并且整个装置可以小型化。此外,由于不需要磁场产生功率,因此不仅可以减少设备成本和操作成本,但是磁场生成线圈的发热没有问题。\n\n设置在环状永磁组件的中心腔中的冷却装置可以通过由于热处理温度而不会导致永磁体的特性劣化的冷却水流。因此,本发明的磁场中的热处理炉是低的。\n\n另外,由于不需要提供给磁场生成线圈的大功率,因此可以减小电源设备成本,并且安装空间可能很小。此外,泄漏磁通量远小于使用电流产生的磁场,并且对周围工人没有影响,并且促进了制造过程中的线组成。除了这些,不仅可以容易且紧凑的节能磁场中的设备成本,还可以在节能磁场中进行真空热处理。\n\n[简要描述;简介]\n\n【图1】它是主要部分剖视图,其示出了本发明的磁场中的热处理炉的示例。\n\n【图2】它是主要部分横截面图,其示出了用于本发明的磁场的热处理炉的环形永磁组件的示例。\n\n图3.它是主要部分剖视图,其示出了环状永磁组件的另一个例子。\n\n图4.图3是表示沿着环状永磁组件的轴向的中心腔中的磁场强度分布的曲线图。\n\n图5.图3是表示中心腔相对于环状永磁组件的外径和轴向长度的外径的曲线图。\n\n6.图3是表示环状永磁组件的轴向长度的中心腔中的磁场均匀性的曲线图。\n\n图7.图2是表示由多个永磁件组成的永磁体段的示例的俯视图和剖视图。\n\n图8图3是表示由多个永磁件组成的永磁体段的另一示例的俯视图。\n\n图9图3是表示永磁体段的横截面形状的一例的俯视图和剖视图。\n\n图10.图2是表示由具有不同磁化方向的两种永磁体组成的环形永磁组件的俯视图。\n\n11.图3是表示磁极划分的数量与磁场均匀程度之间的关系的图。\n\n12.图3是表示磁极划分的数量与歪斜角度(扭转角)之间的关系的图。\n\n图13.对于由八个永磁体段和12个永磁体段组成的环状永磁体组件,在圆周方向上,环状永磁组件的中心空腔中的轴线上的磁通密度是表示与轴向距离的关系的图从环形永磁组件的中心。\n\n14.图3是示出磁场中的热处理的示例的过程图。\n\n图15.图3是表示具有电磁铁的传统磁场中的热处理炉的示意性剖视图。\n\n[标志的说明]\n\n1,1A:环状永磁组件,3:冷却装置,4:水冷管\n\n5:加热装置(加热器),6:热处理容器(真空容器),7:密封\n\n8:密封雄螺纹部分,9:密封母螺纹部分,10:热处理支架\n\n110:保持构件,112:冷却结构,113:线圈,114:高频线圈\n\n20:中央腔,11、12、13:永磁体段\n\n40:分离永磁体,41,42,43,44:区段磁铁(小磁铁)');
INSERT INTO `os_patent_instruction_text` VALUES (12946, 22775, '[0001]This application is a Divisional of U.S. patent application Ser. No. 09/986,390 filed Nov. 8, 2001, currently pending.\n\nBACKGROUND OF THE INVENTION\n\n[0002]1. Field of the Invention\n\n[0003]The present invention generally relates to a method for producing a permanent magnet that is applicable for use in motors and actuators of various types, and more particularly, the present invention relates to an iron-based rare earth magnet including multiple ferromagnetic phases and a method for producing such a novel magnet.\n\n[0004]2. Description of the Related Art\n\n[0005]Recently, it has become more and more necessary to further improve the performance of, and further reduce the size and weight of, consumer electronic appliances, office automation appliances and various other types of electric equipment. For these purposes, a permanent magnet for use in each of these appliances is required to maximize its performance to weight ratio when operated as a magnetic circuit. For example, a permanent magnet with a remanence Br of 0.5 T or more is now in high demand. Hard ferrite magnets have been used widely because magnets of this type are relatively inexpensive. However, the hard ferrite magnets cannot achieve the high remanence Br of 0.5 T or more.\n\n[0006]An Sm—Co type magnet, produced by a powder metallurgical process, is currently known as a typical permanent magnet that achieves the high remanence Br of 0.5 T or more. However, the Sm—Co type magnet is expensive, because Sm and Co are both expensive materials\n\n[0007]As for the Nd—Fe—B type magnet on the other hand, the magnet is mainly composed of relatively inexpensive Fe (typically at about 60 wt % to 70 wt % of the total weight), and is much less expensive than the Sm—Co type magnet Examples of other high-remanence magnets include an Nd—Fe—B type sintered magnet produced by a powder metallurgical process and an Nd—Fe—B type rapidly solidified magnet produced by a melt quenching process. An Nd—Fe—B type sintered magnet is disclosed in Japanese Laid-Open Publication No. 59-46008, for example, and an Nd—Fe—B type rapidly solidified magnet is disclosed in Japanese Laid-Open Publication No. 60-9852, for instance. Nevertheless, it is still expensive to produce the Nd—Fe—B type magnet. This is partly because huge equipment and a great number of manufacturing and processing steps are required to separate and purify, or to obtain by reduction reaction, Nd, which usually accounts for 10 at % to 15 at % of the magnet. Also, a powder metallurgical process normally requires a relatively large number of manufacturing and processing steps by its nature.\n\n[0008]Compared to an Nd—Fe—B type sintered magnet formed by a powder metallurgical process, an Nd—Fe—B type rapidly solidified magnet can be produced at a lower cost by a melt quenching process. This is because an Nd—Fe—B type rapidly solidified magnet can be produced through relatively simple process steps of melting, melt quenching and heat treating. However, to obtain a permanent magnet in bulk by a melt quenching process, a bonded magnet should be formed by compounding a magnet powder, made from a rapidly solidified alloy, with a resin binder. Accordingly, the magnet powder normally accounts for at most about 80 volume % of the molded bonded magnet. Also, a rapidly solidified alloy, formed by a melt quenching process, is magnetically isotropic\n\n[0009]For these reasons, an Nd—Fe—B type rapidly solidified magnet produced by a melt quenching process has a remanence Br lower than that of a magnetically anisotropic Nd—Fe—B type sintered magnet produced by a powder metallurgical process\n\n[0010]As disclosed in Japanese Laid-Open Publication No. 1-7502, a technique of adding, in combination, at least one element selected from the group consisting of Zr, Nb, Mo, Hf, Ta and W and at least one more element selected from the group consisting of Ti, V and Cr to the material alloy effectively improves the magnetic properties of an Nd—Fe—B type rapidly solidified magnet. When these elements are added to the material alloy, the magnet has increased coercivity HcJ and anticorrosiveness. However, the only known effective method of improving the remanence Br is increasing the density of the bonded magnet. Also, where an Nd—Fe—B type rapidly solidified magnet includes a rare earth alloy at 6 at % or more, a melt spinning process, in which a melt of its material alloy is ejected against a chill roller, has often been used in the prior art to rapidly cool and solidify the material alloy at an increased rate.\n\n[0011]As for an Nd—Fe—B type rapidly solidified magnet, an alternative magnet material was proposed by R. Coehoorn et al., in J. de Phys, C8, 1998, pp. 669-670. The Coehoorn material has a composition including a rare earth element at a relatively low mole fraction (i.e., around Nd38Fe772B19, where the subscripts are indicated in atomic percentages); and an Fe3B phase as its main phase. This permanent magnet material is obtained by heating and crystallizing an amorphous alloy that has been prepared by a melt quenching process. Also, the crystallized material has a metastable structure in which soft magnetic Fe3B and hard magnetic Nd2Fe14B phases coexist and in which crystal grains of very small sizes (i.e., on the order of several nanometers) are distributed finely and uniformly as a composite of these two crystalline phases For that reason, a magnet made from such a material is called a “nanocomposite magnet” It was reported that such a nanocomposite magnet has a remanence Br as high as 1 T or more. But the coercivity HcJ thereof is relatively low, i e., in the range from 160 kA/m to 240 kA/m. Accordingly, this permanent magnet material is applicable only when the operating point of the magnet is 1 or more\n\n[0012]It has been proposed that various metal elements be added to the material alloy of a nanocomposite magnet to improve the magnetic properties thereof. See, for example, Japanese Laid-Open Publication No. 3-261104, Japanese Patent Publication No. 2727505, Japanese Patent Publication No. 2727506, PCT International Publication No. WO 003/03403 and W. C. Chan et. al., “The Effects of Refractory Metals on the Magnetic Properties of α—Fe/R2Fe14B-type Nanocomposites”, IEEE Trans. Magn. No. 5, INTERMAG. 99, Kyongiu, Korea, pp. 3265-3267, 1999. However, none of these proposed techniques are reliable enough to always obtain a sufficient “characteristic value per cost”. More specifically, none of the nanocomposite magnets produced by these techniques realizes a coercivity high enough to actually use it in various applications. Thus, none of these magnets can exhibit commercially viable magnetic properties.\n\nSUMMARY OF THE INVENTION\n\n[0013]In order to overcome the problems described above, preferred embodiments of the present invention provide a method for producing an iron-based alloy permanent magnet with excellent magnetic properties at a low cost, and provide a permanent magnet that achieves a coercivity HcJ that is high enough to actually use the magnet in various applications (e.g., HcJ≧600 kA/m) while maintaining a remanence Br of about 0.8 T or more.\n\n[0014]According to a preferred embodiment of the present invention, a method of making a material alloy for an iron-based rare earth magnet includes the step of preparing a melt of an iron-based rare earth material alloy having a composition represented by the general formula (Fe1-mTm)100-x-y-z-n(B1-pCp)xRyTizMn. In this formula, T is at least one element selected from the group consisting of Co and Ni; R is at least one element selected from the group consisting of Y (yttrium) and the rare earth elements; and M is at least one element selected from the group consisting of Al, Si, V, Cr, Mn, Ni, Cu, Zn, Ga, Zr, Nb, Mo, Ag, Hf, Ta, W, Pt, Au and P. The mole fractions x, y, z, m, n and p preferably satisfy the inequalities of: 10 at %2Fe14B phase.\n\n[0015]In one preferred embodiment of the present invention, the cooling step may include the step of adjusting a flow width of the melt to a predetermined size in an axial direction of the chill roller using the guide\n\n[0016]In another preferred embodiment of the present invention, the rapidly solidified alloy may be made within a reduced-pressure atmosphere.\n\n[0017]Then, the atmospheric gas preferably has its pressure controlled at between about 0.13 kPa and about 100 kPa.\n\n[0018]In still another preferred embodiment, the rapidly solidified alloy produced in the cooling step may include the R2Fe14B phase at about 60 volume percent or more.\n\n[0019]In yet another preferred embodiment, in the cooling step, a surface velocity of the chill roller may be controlled at between about 5 m/sec and about 26 m/sec, and a feeding rate per unit width of the melt may be controlled at about 3 kg/min/cm or less.\n\n[0020]In yet another preferred embodiment, the method may include the step of forming a structure in which three or more crystalline phases, including at least the R2Fe14B phase and α—Fe and ferromagnetic iron-based boride phases, exist; an average crystal grain size of the R2Fe14B phase is between about 20 nm and about 200 nm; and an average crystal grain size of the α—Fe and boride phases is between about 1 nm and about 50 nm.\n\n[0021]In yet another preferred embodiment, an iron-based boride phase with ferromagnetic properties may exist around a grain boundary or sub-boundary of the R2Fe14B phase.\n\n[0022]Preferably, the structure is formed by subjecting the rapidly solidified alloy to a heat treatment for crystallization After the heat treatment, the R2Fe14B phase constitutes about 65 vol % to about 85 vol % of the alloy.\n\n[0023]In that case, the heat treatment preferably includes a step of keeping the rapidly solidified alloy heated to a temperature between about 550° C. and about 850° C. for approximately 30 seconds or more.\n\n[0024]More preferably, the method further includes the step of pulverizing the rapidly solidified alloy before subjecting the rapidly solidified alloy to the heat treatment.\n\n[0025]In yet another preferred embodiment, the iron-based boride phase may include Fe3B and/or Fe23B6.\n\n[0026]In yet another preferred embodiment, the element M always includes Nb. In this particular preferred embodiment, the melt of the material alloy including Nb has a liquidus temperature lower by about 10° C. or more than that of another iron-based rare earth magnet material alloy that has substantially the same composition as the material alloy including Nb but that includes substantially no Nb.\n\n[0027]More specifically, the material alloy preferably includes Nb in an amount between about 0.1 at % and about 3 at %.\n\n[0028]In yet another preferred embodiment, an atomic ratio p of C in the general formula preferably satisfies the inequality of 0.01≦p[0029]In yet another preferred embodiment, before the melt is fed onto the guide, the melt preferably has its kinematic viscosity controlled at approximately 5×10−6 m2/sec or less.\n\n[0030]Where 0.01≦p[0031]In that case, the compound phase that precipitates first while the melt is being rapidly cooled and solidified in the cooling step may be a titanium boride compound.\n\n[0032]In yet another preferred embodiment, the cooling step may be performed by rotating the chill roller, which preferably has a centerline roughness Ra of about 20 μm or less on its surface, at a surface velocity of approximately 10 m/sec or more.\n\n[0033]In yet another preferred embodiment, a melt flow quenching rate, at which each flow of the melt is rapidly cooled and solidified by the chill roller in the cooling step, may be controlled at about 0.7 kg/min or more but less than about 4 kg/min.\n\n[0034]In yet another preferred embodiment, each flow of the melt may have its width controlled in the cooling step by the guide at about 5 mm or more but less than about 20 mm.\n\n[0035]In yet another preferred embodiment, the melt may have its kinematic viscosity controlled at approximately 5×10−6 m2/sec or less.\n\n[0036]In yet another preferred embodiment, the guide may have its surface temperature kept at approximately 300° C. or more so that the melt has a kinematic viscosity of no greater than about 50×10−6 m2/sec\n\n[0037]In yet another preferred embodiment, the rapidly solidified alloy may have a thickness of between about 50 μm and about 200 μm.\n\n[0038]In yet another preferred embodiment, the guide may be made of a material that includes Al2O3 at about 80 volume percent or more.\n\n[0039]In yet another preferred embodiment, the chill roller may include a base made of a material with a thermal conductivity of approximately 50 W/m/K or more.\n\n[0040]In that case, the base of the chill roller is preferably made of carbon steel, tungsten, iron, copper, molybdenum, beryllium or a copper alloy, or other suitable material.\n\n[0041]Optionally, the base of the chill roller may have its surface plated with chromium, nickel or a mixture thereof, or other suitable material.\n\n[0042]Another preferred embodiment of the present invention provides a method for producing an iron-based permanent magnet that includes the steps of preparing the material alloy for the iron-based rare earth magnet by the inventive method of making a material alloy according to the preferred embodiments of the present invention described above, and subjecting the material alloy for the iron-based rare earth magnet to a heat treatment.\n\n[0043]In another preferred embodiment of the present invention, an inventive method for producing a bonded magnet includes the steps of preparing a powder of the material alloy for the iron-based rare earth magnet by the inventive method of making a material alloy or a powder of the iron-based permanent magnet by the inventive method for producing an iron-based permanent magnet according to the preferred embodiments described above, and processing the powder into the bonded magnet\n\n[0044]A rapidly solidified alloy according to various preferred embodiments of the present invention preferably has a composition represented by the general formula Fe1-mTm)100-x-y-z-nQxRyTizMn. In this formula, T is at least one element selected from the group consisting of Co and Ni; Q is at least one element selected from the group consisting of B and C; R is a rare earth element; and M is at least one element selected from the group consisting of Al, Si, V, Cr, Mn, Ni, Cu, Zn, Ga, Zr, Nb, Mo, Hf, Ta, W, Pt, Pb, Au and Ag. The mole fractions x, y, z, m and n preferably satisfy the inequalities of: 10 at %[0045]In one preferred embodiment of the present invention, the crystal structure may include a ferromagnetic boride phase with an average crystal grain size of between about 1 nm and about 50 nm, and an R2Fe14B phase with an average crystal grain size of between about 20 nm and about 200 nm.\n\n[0046]In another preferred embodiment of the present invention, an amorphous portion is interposed between the crystal structures on the two surfaces.\n\n[0047]In this particular preferred embodiment, the alloy preferably has a thickness of about 80 μm or more\n\n[0048]Another rapidly solidified alloy according to a preferred embodiment of the present invention has a composition represented by the general formula\n\n[0049](Fe1-mTm)100-x-y-z-nQxRyTizMn. In this formula, T is at least one element selected from the group consisting of Co and Ni; Q is at least one element selected from the group consisting of B and C, R is a rare earth element; and M is at least one element selected from the group consisting of Al, Si, V, Cr, Mn, Cu, Zn, Ga, Zr, Nb, Mo, Hf, Ta, W, Pt, Pb, Au and Ag. The mole fractions x, y, z, m and n preferably satisfy the inequalities of: 10 at %[0050]A magnet powder according to a preferred embodiment of the present invention has a composition represented by the general formula (Fe1-mTm)100-x-y-z-nQxRyTizMn. In this formula, T is at least one element selected from the group consisting of Co and Ni; Q is at least one element selected from the group consisting of B and C; R is a rare earth element; and M is at least one element selected from the group consisting of Al, Si, V, Cr, Mn, Cu, Zn, Ga, Zr, Nb, Mo, Hf, Ta, W, Pt, Pb, Au and Ag. The mole fractions x, y, z, m and n preferably satisfy the inequalities of: 10 at % [0051]Other features, elements, processes, steps, characteristics and advantages of the present invention will become more apparent from the following detailed description of preferred embodiments of the present invention with reference to the attached drawings.\n\nBRIEF DESCRIPTION OF THE DRAWINGS\n\n[0052]FIG. 1 illustrates the arrangement of an exemplary strip caster preferably used in various preferred embodiments of the present invention.\n\n[0053]FIG. 2 illustrates the structure of a nanocomposite magnet produced by methods of preferred embodiments of the present invention.\n\n[0054]FIG. 3 illustrates the arrangement of another exemplary strip caster preferably used in various preferred embodiments of the present invention.\n\n[0055]FIG. 4 is a perspective view illustrating a shoot (or exemplary guiding means) for use to guide a molten alloy in the strip caster of preferred embodiments of the present invention.\n\n[0056]FIG. 5 illustrates how the centerline roughness Ra at the surface of a chill roller for use in a strip casting process affects a molten alloy being rapidly cooled and solidified.\n\n[0057]FIG. 6 illustrates how the centerline roughness Ra at the surface of a chill roller for use in a melt spinning process affects a molten alloy being rapidly cooled and solidified.\n\n[0058]FIG. 7A is a cross-sectional view illustrating the structure of a rapidly solidified R-T-B type alloy that has been formed by a strip casting process with Ti added thereto\n\n[0059]FIG. 7B is a cross-sectional view illustrating the structure of a known rapidly solidified R-T-B type alloy that has been formed by a strip casting process with no Ti added thereto.\n\n[0060]FIG. 8 is a graph illustrating the results of DTA carried out on samples Nos. 2 and 6.\n\n[0061]FIG. 9 is a graph illustrating the results of DTA carried out on samples Nos. 8 and 14.\n\n[0062]FIG. 10 is a graph illustrating the powder XRD patterns of the samples Nos. 8 and 14 yet to be heat-treated (i.e., in an as-cast state).\n\n[0063]FIG. 11 is a graph illustrating the XRD patterns of Nd9Fe73B12.6C1.4Ti4 (i.e., an example of the present invention where p=0.1) and Nd9Fe73B7C7Ti4 (i.e., a comparative example where p=0.5) before the heat treatment.\n\n[0064]FIG. 12 is a graph illustrating the demagnetization curves of Nd9Fe73B12.6C1.4Ti4 and Nd9Fe73B7C7Ti4 representing the example of a preferred embodiment of the present invention and comparative example, respectively.\n\n[0065]FIG. 13 is a graph illustrating the powder XRD patterns of “as-cast” rapidly solidified alloy and “as-annealed (or heat-treated)” alloy for an example of a preferred embodiment of the present invention.\n\n[0066]FIG. 14 is a graph illustrating the demagnetization curves of “as-cast” rapidly solidified alloy and “as-annealed (or heat-treated)” alloy as measured with a vibrating sample magnetometer for an example of a preferred embodiment of the present invention.\n\n[0067]FIG. 15 is a graph illustrating the mass increase percentages of the inventive nanocomposite magnet powder and conventional rapidly solidified magnet powders when these powders are heated.\n\n[0068]FIG. 16 is a graph illustrating the densities of compacts for a bonded magnet, which were formed using nanocomposite magnet powders with mutually different particle size distributions.\n\n[0069]FIG. 17 is an exploded perspective view schematically illustrating a construction of a stepping motor 100 including a permanent magnet rotor as a preferred embodiment of the present invention.\n\n[0070]FIGS. 18A through 18D are cross-sectional views illustrating a bonded-magnet-integrated, rotor 200 and a manufacturing process thereof in accordance with the preferred embodiment of the present invention.\n\n[0071]FIG. 19 is a schematic representation illustrating the configuration of a magnet-embedded rotor 300 as another preferred embodiment of the present invention.\n\n[0072]FIGS. 20A and 20B are perspective views schematically illustrating a structure of a rotary encoder 411 as still another preferred embodiment of the present invention.\n\n[0073]FIGS. 21A and 21B are cross-sectional views schematically illustrating a structure of an electrophotograph process cartridge 501, including a magnetic roller 507, as yet another preferred embodiment of the present invention.\n\nDETAILED DESCRIPTION OF PREFERRED EMBODIMENTS\n\n[0074]In an inventive method for producing a permanent magnet, a melt of an iron-based alloy, including Fe, B, R (which is at least one of the rare earth elements including Y) and Ti, is rapidly cooled by a strip casting process within a low-pressure atmosphere, thereby making a rapidly solidified alloy including a micro-crystalline R2Fe14B phase. The rapidly solidified alloy may then be heat-treated to crystallize amorphous portions remaining in the rapidly solidified alloy.\n\n[0075]A strip casting process is a technique of making a thin strip of rapidly solidified alloy by bringing a melt of an alloy into contact with the surface of a chill roller and rapidly cooling and solidifying the melt. According to preferred embodiments of the present invention, the melt is rapidly cooled and solidified using a chill roller that rotates faster than that used for a known strip casting process. Compared to a melt spinning process in which a melt of an alloy is ejected through a nozzle orifice onto the surface of a chill roller, the strip casting process results in a lower cooling rate. However, the strip casting process excels in mass productivity because this process provides a thin-strip of rapidly solidified alloy with relatively large width and thickness.\n\n[0076]According to preferred embodiments of the present invention, either a crystal structure including a microcrystalline R2Fe14B phase or a structure in which a microcrystalline R2Fe14B phase and amorphous phases coexist can be formed in the rapidly solidified alloy almost without precipitating a soft magnetic α—Fe phase therein Thus, the excessive grain growth of the R2Fe14B phase is prevented and the average crystal grain size thereof can be between about 20 nm and about 150 nm even after the rapidly solidified alloy has been heat-treated As a result, a high-performance composite permanent magnet, in which fine crystal grains of the soft magnetic phases such as the α—Fe phase are distributed, can be obtained. In addition, the fine crystal grains of the soft magnetic phases exist around the grain boundaries or sub-boundaries of the R2Fe14B phase, thus greatly improved exchange interactions among the respective constituent phases.\n\n[0077]In the prior art, even when one tries to obtain a rapidly solidified alloy comprised of a lot of R2Fe14B phase by rapidly cooling a molten alloy with a composition similar to that of preferred embodiments of the present invention (i.e., a composition including all the elements included in the inventive composition but Ti), the resultant alloy will have a structure in which a lot of α—Fe phase has grown coarsely. Thus, when the alloy is heated and crystallized after that, the α—Fe phase will increase its grain size excessively. Once soft magnetic phases, including the α—Fe phase, have grown too much, the magnetic properties of the alloy deteriorate significantly, thus making it virtually impossible to produce a quality permanent magnet from such an alloy.\n\n[0078]Particularly with a material alloy containing boron at a relatively high percentage and rare earth element R at a relatively low percentage (less than 10 at %) like the alloy of preferred embodiments of the present invention, even if a melt of such an alloy is cooled at a low rate, crystalline phases like the R2Fe14B phase cannot be produced so easily according to conventional methods In the prior art, even if one tries to make a rapidly solidified alloy including the R2Fe14B phase at 60 volume % or more by decreasing the cooling rate of the melt sufficiently, not only the R2Fe14B phase but also the α—Fe phase or its precursor will precipitate excessively Thus, when that alloy is heated and crystallized after that, the α—Fe phase will further grow to greatly deteriorate the magnet properties of the alloy.\n\n[0079]Thus, it is widely believed in the art that the best way of obtaining a nanocomposite magnet with a high coercivity is to cool a melt of an alloy at an increased rate by a melt spinning process to amorphize most of the alloy first and then forming a highly fine and uniform structure by heating and crystallizing the amorphous phases. This is because they took it for granted that to obtain a nanocomposite structure in which fine crystal grains are distributed uniformly, there should be no other alternative but crystallizing the amorphous phases through an easily controllable heat treatment process.\n\n[0080]Based on this popular belief, W. C. Chan et al., reported a technique of obtaining Nd2Fe14B and α—Fe phases with grain sizes on the order of several tens nm. According to Chan\'s technique, the amorphous former La is added to a material alloy. Next, the material alloy is melt-spun to obtain a rapidly solidified alloy mainly composed of amorphous phases. And then the alloy is heated and crystallized to nucleate and grow both the Nd2Fe14B and α—Fe phases simultaneously. See W. C. Chan et al., “The Effects of Refractory Metals on the Magnetic Properties of α—Fe/R2Fe14B-type Nanocomposites”, IEEE Trans. Magn. No.5, INTERMAG. 99, Kyongiu, Korea, pp. 3265-3267, 1999. This article also teaches that adding a refractory metal element such as Ti in a very small amount (e.g., 2 at %) improves the magnetic properties and that the mole fraction of Nd, rare earth element, is preferably increased from about 9.5 at % to about 11.0 at % to reduce the grain sizes of the Nd2Fe14B and α—Fe phases The refractory metal is added to suppress borides like R2Fe23B3 and Fe3B from being produced and to make a magnet consisting essentially of Nd2Fe14B and α—Fe phases.\n\n[0081]According to the Chan \'s technique, the rapidly solidified alloy for a nanocomposite magnet is prepared by a melt spinning process in which a molten alloy is ejected through a nozzle onto the surface of a chill roller that is rotating at a high velocity. The melt spinning process is suitably effective to make an amorphous rapidly solidified alloy because a process of this type ensures an extremely high cooling rate.\n\n[0082]In contrast, according to preferred embodiments of the present invention, a molten alloy is cooled by a strip casting process at a cooling rate lower than that achieved by the known melt spinning process. However, the additive Ti can suppress not only the nucleation of the γ—Fe phase (which transforms into α—Fe on cooling) during the rapid solidification process but also the grain growth of soft magnetic phases like the α—Fe phase during the heating/crystallizing process. As a result, a rapidly solidified alloy, in which fine crystal grains of the R2Fe14B phase are distributed uniformly, can be obtained.\n\n[0083]According to preferred embodiments of the present invention, even though the material alloy used preferably includes a rare earth element at a relatively low percentage (e.g., less than about 10 at %), a permanent magnet, exhibiting high magnetization (or remanence) and coercivity and showing excellent loop squareness in its demagnetization curve, can be mass produced.\n\n[0084]According to preferred embodiments of the present invention, the coercivity can be increased by making the Nd2Fe14B phase nucleate and grow faster and earlier in the cooling process so that the Nd2Fe14B phase increases its volume percentage and yet by suppressing the grain coarsening of the soft magnetic phases. Also, the magnetization can be increased probably because the additive Ti can produce a boride phase (e.g., ferromagnetic iron-based borides) from a B-rich non-magnetic amorphous phase existing in the rapidly solidified alloy and can reduce the volume percentage of the non-magnetic amorphous phase remaining in the heated and crystallized alloy.\n\n[0085]Hereinafter, the iron-based rare earth alloy magnet of preferred embodiments of the present invention will be described in further detail.\n\n[0086]First, a melt of an iron-based rare earth material alloy, having a composition represented by the general formula (Fe1-mTm)100-x-y-z-n(B1-pCp)xRyTizMN, is prepared. In this formula, T is at least one element selected from the group consisting of Co and Ni; R is at least one element selected from the group consisting of Y (yttrium) and the rare earth elements; and M is at least one element selected from the group consisting of Al, Si, V, Cr, Mn, Cu, Zn, Ga, Zr, Nb, Mo, Ag, Hf, Ta, W, Pt, Au and Pb. The mole fractions x, y, z, m, n and p preferably satisfy the inequalities of:\n\n[0087]10 at %[0088]6 at %≦y[0089]0.5 at %≦z≦12 at %;\n\n[0090]0≦m≦0.5;\n\n[0091]0 at %≦n≦10 at %; and\n\n[0092]0≦p≦0.25, respectively\n\n[0093]Next, a cooling step is carried out Specifically, the melt of the material alloy is rapidly cooled by a strip casting process within a reduced pressure atmosphere, thereby making a rapidly solidified alloy including an R2Fe14B phase with a small average crystal grain size (e g , about 150 nm or less) at approximately 60 volume percent or more.\n\n[0094]The rapidly solidified alloy obtained this way is then heated and crystallized if necessary to form a nanocomposite structure including R2Fe14B and ferromagnetic iron-based boride phases. As the soft magnetic phases, a microcrystalline α—Fe phase may also be included in addition to the iron-based boride phase. The melt is rapidly cooled and the rapidly solidified alloy is heated and crystallized under such conditions that the R2Fe14B phase will have an average crystal grain size of about 20 nm to about 200 nm and the boride and α—Fe phases will have an average crystal grain size of about 1 nm to about 50 nm in the nanocomposite structure.\n\n[0095]According to preferred embodiments of the present invention, the additive Ti can contribute to producing a lot of R2Fe14B phase preferentially while the molten alloy is being rapidly cooled and solidified.\n\n[0096]In the resultant magnet, the R2Fe14B phase has an average crystal grain size that is greater than that of the iron-based boride or α—Fe phase. Even though the hard magnetic R2Fe14B phase has a relatively large average grain size, the soft magnetic phases like the α—Fe phase have a sufficiently small average grain size. Accordingly, these constituent phases are magnetically coupled together through exchange interactions and the magnetization direction of the soft magnetic phases is constrained by the hard magnetic phase. Consequently, the alloy as a whole exhibits excellent loop squareness in its demagnetization curve.\n\n[0097]In preferred embodiments of the present invention, if various process conditions, including alloy composition, alloy cooling rate and heat treatment temperature, are controlled appropriately, iron-based boride and α—Fe phases with a saturation magnetization equal to, or even higher than, that of the R2Fe14B phase can be produced. Examples of the iron-based borides produced include Fe3B (with a saturation magnetization of about 1.5 T) and Fe23B6 (with a saturation magnetization of about 1.6 T). In this case, the R2Fe14B phase has a saturation magnetization of about 1.6 T where R is Nd, and the α—Fe phase has a saturation magnetization of about 2.1 T.\n\n[0098]In preferred embodiments of the inventive process, those ferromagnetic iron-based borides are easily produced. The reason is that when a rapidly solidified alloy, mostly composed of the R2Fe14B phase, is made, the amorphous phases existing in the solidified alloy should contain excessive amounts of boron. Accordingly, when the alloy is heated and crystallized, that excessive boron will bond to other elements easily, thus nucleating and growing those borides profusely. However, if that boron, contained in the amorphous phases, bonds to other elements and produces compounds with a low magnetization before the heat treatment, then the magnet as a whole will have significantly decreased magnetization. As used herein, the term “amorphous phase” means not only a phase in which the atomic arrangement is sufficiently disordered, but also a phase containing embryos for crystallization, extremely small crystalline regions (size: several nanometers or less), and/or atomic cluster', '[0001] 本申请是美国专利申请序列号3,049,049的分部。  2001年11月8日提交的第09 / 986,390号美国专利,目前待审。 \n\n 发明背景 \n\n [0002] 1.发明领域 \n\n [0003] 本发明总体上涉及一种适用于各种类型的电动机和致动器的永磁体的制造方法,更具体地,本发明涉及一种包括多个铁磁相的铁基稀土磁体及其制造方法。 生产这种新颖的磁铁。 \n\n [0004] 2.相关技术的描述 \n\n [0005] 近来,变得越来越有必要进一步改善消费电子设备,办公自动化设备和各种其他类型的电气设备的性能,并进一步减小其尺寸和重量。 为了这些目的,需要在这些电器的每一种中使用的永磁体在作为磁路工作时最大化其性能重量比。 例如,剩磁为B的永磁体 r  现在对0.5 T或更高的需求量很大。 由于这种类型的磁体相对便宜,因此硬铁氧体磁体已被广泛使用。 但是,硬铁氧体磁体无法实现高剩磁B r  0.5 T或更多。 \n\n [0006] 目前,通过粉末冶金工艺生产的Sm-Co型磁体是获得高剩磁B的典型永磁体。 r  0.5 T或更多。 但是,Sm-Co型磁铁价格昂贵,因为Sm和Co都是昂贵的材料 \n\n [0007] 另一方面,对于Nd-Fe-B型磁体,该磁体主要由相对便宜的Fe(通常占总重量的约60wt%至70wt%)组成,并且比Sm-便宜得多。  Co型磁体其他高剩磁磁体的示例包括通过粉末冶金工艺生产的Nd-Fe-B型烧结磁体和通过熔融淬火工艺生产的Nd-Fe-B型快速凝固磁体。 例如,在日本特许公开第59-46008号中公开了一种Nd-Fe-B型烧结磁体,并且在日本特许公开第60-9852号中公开了一种Nd-Fe-B型快速凝固磁体。  , 例如。 尽管如此,生产Nd-Fe-B型磁体仍然很昂贵。 这部分是因为需要大量的设备以及大量的制造和加工步骤来分离和纯化或通过还原反应获得Nd,Nd通常占磁体的10at%至15at%。 同样,粉末冶金工艺由于其性质,通常需要相对大量的制造和加工步骤。 \n\n [0008] 与通过粉末冶金法形成的Nd-Fe-B型烧结磁体相比,可以通过熔融淬火工艺以较低的成本生产Nd-Fe-B型快速凝固磁体。 这是因为可以通过相对简单的熔融,熔融淬火和热处理的工艺步骤来制造Nd-Fe-B型快速凝固的磁体。 然而,为了通过熔融淬火工艺获得大块永磁体,应该通过将由快速凝固的合金制成的磁体粉末与树脂粘合剂混合来形成粘结磁体。 因此,磁体粉末通常占模制粘结磁体的至多约80体积%。 而且,通过熔融淬火工艺形成的快速凝固合金是各向同性的 \n\n [0009] 由于这些原因,通过熔融淬火工艺生产的Nd-Fe-B型快速凝固磁体具有剩磁B r  低于通过粉末冶金工艺生产的磁各向异性Nd-Fe-B型烧结磁体 \n\n [0010] 如日本特开平1-7502号公报中所公开的,一种技术是将选自Zr,Nb,Mo,Hf,Ta和W的至少一种元素和选自至少一种的其他元素组合起来添加的技术。 从Ti,V和Cr组成的组到材料合金,有效地改善了Nd-Fe-B型快速凝固磁体的磁性能。 将这些元素添加到材料合金中后,磁体的矫顽力H增加 J 和防腐性。 但是,提高剩磁B的唯一已知有效方法 r  正在增加粘结磁铁的密度。 此外,在Nd-Fe-B型快速凝固磁体包括含量为6at%或更高的稀土合金的情况下,通常使用熔体纺丝工艺将其材料合金的熔体喷射到冷却辊上。 现有技术以增加的速率快速冷却和固化材料合金。 \n\n [0011] 对于Nd-Fe-B型快速凝固的磁体,R.Coehoorn等人在J.de Phys,C8,1998,pp.669-670中提出了替代的磁体材料。  Coehoorn材料的成分包括相对较低摩尔分数(即Nd左右)的稀土元素 38 铁 772 乙 19 ,其中下标以原子百分比表示); 和一个铁 3 B相为主要相。 该永磁体材料是通过加热和结晶已经通过熔融淬火工艺制备的非晶态合金而获得的。 而且,结晶材料具有亚稳态结构,其中软磁性Fe 3 B和硬磁钕 2 铁 14 B相共存,并且其中非常小的尺寸(即,几纳米量级)的晶粒作为这两个晶相的复合物精细而均匀地分布。因此,由这种材料制成的磁体被称为“ 纳米复合磁体”据报道,这种纳米复合磁体具有剩磁B r  高达1 T或更高。 但是矫顽力H J 其相对较低,即在160kA / m至240kA / m的范围内。 因此,该永磁体材料仅在磁体的工作点为1以上时适用。 \n\n [0012] 已经提出将各种金属元素添加到纳米复合磁体的材料合金中以改善其磁性。 参见例如日本特开平3-261104号公报,日本特开平2727505号公报,日本特开平2727506号公报,PCT国际公开第WO 003/03403号以及W.C.Chan等人。 等人,“难熔金属对α-Fe/ R磁性的影响 2 铁 14 B型纳米复合材料”,IEEE Trans。 真是的 第5号,INTERMAG。  99,Kyongiu,韩国,第3265-3267页,1999年。但是,这些提议的技术都没有足够可靠的技术来始终获得足够的“每项成本的特性值”。 更具体地,通过这些技术生产的纳米复合磁体中没有一个实现足够高的矫顽力以实际在各种应用中使用。 因此,这些磁体都不能表现出商业上可行的磁性。 \n\n 发明内容 \n\n [0013] 为了克服上述问题,本发明的优选实施方式提供了一种以低成本生产具有优异磁性能的铁基合金永磁体的方法,并提供了一种具有矫顽力H的永磁体。 J 足够高,可以在各种应用中实际使用磁铁(例如,H  J ≧600 kA / m),同时保持剩磁B r  约0.8 T或更多。 \n\n [0014] 根据本发明的优选实施方式,一种用于制造铁基稀土磁体的材料合金的方法包括以下步骤:制备具有由通式(1)表示的组成的铁基稀土材料合金的熔体。 铁 1-m Ť m )  100 xy-z-n (B 1-p C p ) x [R y 钛 z 中号 n 。 式中,T为选自Co和Ni中的至少一种元素。  R是选自Y(钇)和稀土元素中的至少一种元素。  M是选自Al,Si,V,Cr,Mn,Ni,Cu,Zn,Ga,Zr,Nb,Mo,Ag,Hf,Ta,W,Pt,Au和P中的至少一种元素。 摩尔分数x,y,z,m,n和p优选满足以下不等式:10 at% 2 铁 14 B相。 \n\n [0015] 在本发明的一个优选实施例中,冷却步骤可以包括以下步骤:使用引导件将熔体在冷却辊的轴向上的流动宽度调节至预定尺寸。 \n\n [0016] 在本发明的另一个优选实施方案中,可以在减压气氛中制备快速凝固的合金。 \n\n [0017] 然后,优选将大气压力控制在约0.13kPa至约100kPa之间。 \n\n [0018] 在又一个优选的实施方案中,在冷却步骤中生产的快速凝固的合金可以包括R 2 铁 14 B相为约60体积%以上。 \n\n [0019] 在又一个优选的实施方案中,在冷却步骤中,冷却辊的表面速度可以控制在约5m / sec至约26m / sec之间,并且熔体的每单位宽度的进料速率可以控制在约5m / sec至约26m / sec之间。  3 kg / min / cm以下。 \n\n [0020] 在又一个优选实施方案中,该方法可以包括形成其中三个或更多个结晶相至少包括R的结构的步骤。 2 铁 14 存在B相,α-Fe和铁磁性铁基硼化物相;  R的平均晶粒尺寸 2 铁 14 B相在约20nm至约200nm之间。  α-Fe和硼化物相的平均晶粒尺寸在约1nm至约50nm之间。 \n\n [0021] 在又一个优选的实施方案中,具有铁磁性的铁基硼化物相可以存在于R的晶界或亚界附近。 2 铁 14 B相。 \n\n [0022] 优选地,通过对快速凝固的合金进行热处理以结晶化来形成组织,在热处理之后,R 2 铁 14 B相占合金的约65vol%至约85vol%。 \n\n [0023] 在那种情况下,热处理优选包括将快速凝固的合金加热至约550℃至约850℃之间的温度约30秒以上的步骤。 \n\n [0024] 更优选地,该方法还包括在对快速凝固的合金进行热处理之前将快速凝固的合金粉碎的步骤。 \n\n [0025] 在又一个优选的实施方案中,铁基硼化物相可以包括Fe。 3 硼和/或铁 23 乙 6 。 \n\n [0026] 在又一优选实施例中,元素M总是包括Nb。 在该特定的优选实施方式中,包含Nb的材料合金的熔体的液相线温度比具有与包含以下内容的材料合金基本相同的组成的另一铁基稀土磁体材料合金的液相线温度低约10℃或更高。  Nb,但基本上不包含Nb。 \n\n [0027] 更具体地,材料合金优选地包括Nb,其含量在大约0.1at%至大约3at%之间。 \n\n [0028] 在又一优选实施方式中,通式中C的原子比p优选满足0.01≤p的不等式。 [0029] 在又一个优选的实施方案中,在将熔体进料到引导件上之前,优选将熔体的运动粘度控制在大约5×10。  -6 米 2 /秒或更少。 \n\n [0030] 0.01≤p [0031] 在那种情况下,在熔体在冷却步骤中快速冷却并固化的同时首先沉淀的化合物相可以是硼化钛化合物。 \n\n [0032] 在又一优选实施例中,冷却步骤可以通过旋转冷却辊来执行,该冷却辊优选地以大约10m / sec或更大的表面速度在其表面上具有大约20μm或更小的中心线粗糙度Ra。 \n\n [0033] 在又一个优选的实施方案中,可以将熔体的骤冷速率控制在约0.7kg / min或更大但小于约4kg,在该速率下,熔体的每个流在冷却步骤中被冷却辊快速冷却并固化。  /分钟。 \n\n [0034] 在又一个优选的实施方案中,在冷却步骤中,熔体的每个流的宽度可以通过引导件控制在约5mm或更大但小于约20mm。 \n\n [0035] 在又一个优选的实施方案中,熔体的运动粘度可以控制在大约5×10。  -6 米 2 /秒或更少。 \n\n [0036] 在又一个优选实施例中,引导件的表面温度可以保持在大约300℃或更高,使得熔体的运动粘度不大于大约50×10。  -6 米 2 /秒 \n\n [0037] 在又一个优选实施例中,快速凝固的合金的厚度可以在大约50μm至大约200μm之间。 \n\n [0038] 在又一个优选实施例中,引导件可以由包括Al的材料制成。 2 Ø 3  约占80%(体积)或更高。 \n\n [0039] 在又一优选实施例中,冷却辊可包括由导热率约为50W / m / K或更高的材料制成的基座。 \n\n [0040] 在那种情况下,冷却辊的基底优选由碳钢,钨,铁,铜,钼,铍或铜合金或其他合适的材料制成。 \n\n [0041] 可选地,冷却辊的基部的表面可以镀铬,镍或其混合物或其他合适的材料。 \n\n [0042] 本发明的另一个优选实施方案提供了一种生产铁基永磁体的方法,该方法包括以下步骤:通过根据本发明的优选实施方案的本发明的制备材料合金的方法,制备用于铁基稀土磁体的材料合金。 以上,对本发明的铁基稀土类磁铁用合金材料进行了热处理。 \n\n [0043] 在本发明的另一个优选实施方案中,本发明的用于制造粘结磁体的方法包括以下步骤:通过本发明的用于制造铁基稀土磁体的材料合金的粉末或该材料的粉末来制备该材料合金的粉末。 通过根据上述优选实施方式的用于生产铁基永磁体并将粉末加工成粘结磁体的本发明方法的铁基永磁体 \n\n [0044] 根据本发明的各种优选实施方式的快速凝固的合金优选具有由通式Fe表示的组成。 1-m Ť m )  100 xy-z-n 问 x [R y 钛 z 中号 n 。 式中,T为选自Co和Ni中的至少一种元素。  Q是选自B和C的至少一种元素;  R是稀土元素;  M是选自Al,Si,V,Cr,Mn,Ni,Cu,Zn,Ga,Zr,Nb,Mo,Hf,Ta,W,Pt,Pb,Au和Ag的至少一种元素。  。 摩尔分数x,y,z,m和n优选满足以下不等式:10 at% [0045] 在本发明的一个优选实施方案中,晶体结构可以包括平均晶粒尺寸在约1nm至约50nm之间的铁磁硼化物相,以及R。 2 铁 14 具有约20nm至约200nm的平均晶粒尺寸的B相。 \n\n [0046] 在本发明的另一个优选实施方案中,在两个表面上的晶体结构之间插入了非晶部分。 \n\n [0047] 在该特定的优选实施方式中,合金的厚度优选为约80μm或更大。 \n\n [0048] 根据本发明的优选实施方式的另一种快速凝固的合金具有由通式表示的组成 \n\n [0049] (铁 1-m Ť m )  100 xy-z-n 问 x [R y 钛 z 中号 n 。 式中,T为选自Co和Ni中的至少一种元素。  Q是选自B和C中的至少一种元素,R是稀土元素;  M是选自Al,Si,V,Cr,Mn,Cu,Zn,Ga,Zr,Nb,Mo,Hf,Ta,W,Pt,Pb,Au和Ag中的至少一种元素。 摩尔分数x,y,z,m和n优选满足以下不等式:10 at% [0050] 根据本发明的优选实施方式的磁体粉末具有由通式(Fe 1-m Ť m )  100 xy-z-n 问 x [R y 钛 z 中号 n 。 式中,T为选自Co和Ni中的至少一种元素。  Q是选自B和C的至少一种元素;  R是稀土元素;  M是选自Al,Si,V,Cr,Mn,Cu,Zn,Ga,Zr,Nb,Mo,Hf,Ta,W,Pt,Pb,Au和Ag中的至少一种元素。 摩尔分数x,y,z,m和n优选满足以下不等式:10 at% [0051] 通过以下参考附图对本发明的优选实施例的详细描述,本发明的其他特征,要素,过程,步骤,特征和优点将变得更加明显。 \n\n 附图的简要说明 \n\n [0052] 图。 图1示出了优选用于本发明的各种优选实施例中的示例性带材连铸机的布置。 \n\n [0053] 图。 图2示出了通过本发明的优选实施方式的方法生产的纳米复合磁体的结构。 \n\n [0054] 图。 图3示出了优选地在本发明的各种优选实施例中使用的另一示例性带材连铸机的布置。 \n\n [0055] 图。 图4是示出在本发明的优选实施方式的带材连铸机中用于引导熔融合金的凸出物(或示例性引导装置)的透视图。 \n\n [0056] 图。 图5示出了用于带材铸造工艺的激冷辊表面处的中心线粗糙度Ra如何影响快速冷却和固化的熔融合金。 \n\n [0057] 图。 图6示出了用于熔体纺丝工艺的冷却辊表面处的中心线粗糙度Ra如何影响迅速冷却并固化的熔融合金。 \n\n [0058] 图。 图7A是示出通过带钢铸造工艺形成并添加了Ti的快速凝固的R-T-B型合金的结构的截面图。 \n\n [0059] 图。 图7B是示出通过带钢铸造工艺形成的不添加Ti的已知快速凝固的R-T-B型合金的结构的截面图。 \n\n [0060] 图。 图8是示出对样品2和6进行的DTA的结果的图。 \n\n [0061] 图。 图9是示出对样品8和样品14进行DTA的结果的图。 \n\n [0062] 图。 图10是示出还没有进行热处理(即,处于铸态)的样品编号8和14的粉末XRD图案的图。 \n\n [0063] 图。 图11是示出Nd的XRD图案的图。 9 铁 73 乙 12.6 C 1.4 钛 4  (即p = 0.1的本发明示例)和Nd 9 铁 73 乙 7 C 7 钛 4  (即,p = 0.5的比较例)。 \n\n [0064] 图。 图12是示出Nd的退磁曲线的图。 9 铁 73 乙 12.6 C 1.4 钛 4  和钕 9 铁 73 B7C 7 钛 4  分别代表本发明优选实施例的例子和比较例。 \n\n [0065] 图。 图13是示出用于本发明的优选实施例的示例的“铸态”快速凝固合金和“退火(或热处理)”合金的粉末XRD图案的图。 \n\n [0066] 图。 图14是示出了对于本发明的优选实施例的示例,利用振动样品磁力计测量的“铸态”快速凝固合金和“退火(或热处理)”合金的退磁曲线的曲线图。 \n\n [0067] 图。 图15是示出当本发明的纳米复合磁体粉末和常规的快速固化的磁体粉末被加热时的质量增加百分比的曲线图。 \n\n [0068] 图。 图16是示出使用具有相互不同的粒径分布的纳米复合磁体粉末形成的用于粘结磁体的压块的密度的图。 \n\n [0069] 图。 图17是示意性地示出步进电动机的构造的分解立体图。 100  包括永磁体转子作为本发明的优选实施例。 \n\n [0070] 无花果 图18A至图18D是示出结合了磁体的转子的剖视图。 200  根据本发明的优选实施例的方法及其制造方法。 \n\n [0071] 图。 图19是表示磁铁内置转子的结构的示意图。 300  作为本发明的另一个优选实施例。 \n\n [0072] 无花果 图20A和20B是示意性地示出旋转编码器的结构的透视图。 411  作为本发明的又一优选实施例。 \n\n [0073] 无花果 图21A和21B是示意性地示出电子照相处理盒的结构的截面图。 501 ,包括磁辊 507 作为本发明的又一优选实施例。 \n\n 具体实施方式 \n\n [0074] 在本发明的用于制造永磁体的方法中,通过带钢铸造工艺快速冷却包括Fe,B,R(其为包括Y的稀土元素中的至少一种)和Ti的铁基合金的熔体。 在低压气氛中,从而制成包含微晶R的快速凝固合金 2 铁 14 B相。 然后可以对快速凝固的合金进行热处理以使残留在快速凝固的合金中的非晶部分结晶。 \n\n [0075] 带材铸造工艺是通过使合金的熔体与冷却辊的表面接触并快速冷却并固化该熔体来制造快速凝固的合金薄带的技术。 根据本发明的优选实施例,使用比已知的带材铸造工艺所使用的旋转速度更快的冷却辊来快速冷却和固化熔体。 与其中通过喷嘴孔将合金的熔体喷射到冷却辊的表面上的熔体纺丝工艺相比,带铸工艺导致较低的冷却速率。 但是,带钢铸造工艺在批量生产方面表现出色,因为该工艺提供了快速凝固的合金薄带,具有相对较大的宽度和厚度。 \n\n [0076] 根据本发明的优选实施方案,包括微晶R的晶体结构 2 铁 14 B相或微晶R的结构 2 铁 14 在几乎不析出软磁性α-Fe相的情况下,几乎可以在快速凝固的合金中共存B相和非晶相并存。 2 铁 14 即使在对快速凝固的合金进行热处理之后,也可以防止B相并且其平均晶粒尺寸可以在约20nm至约150nm之间。结果,得到了高性能复合永磁体,其中细晶粒为 可以获得诸如α-Fe相的软磁相。 另外,在R的晶界或子界附近存在软磁性相的微细晶粒。 2 铁 14 B相,因此大大改善了各个组成相之间的交换相互作用。 \n\n [0077] 在现有技术中,即使试图获得由很多R组成的快速凝固的合金 2 铁 14 通过快速冷却具有类似于本发明的优选实施方式的组成的熔融合金(即,包括除了Ti之外的包括在本发明的组成中的所有元素的组成)的B相,所得合金将具有其中许多 α-Fe相的α粗大地生长。 因此,当此后加热和结晶合金时,α-Fe相将过度增加其晶粒尺寸。 一旦软磁相(包括α-Fe相)生长过多,合金的磁性能就会大大降低,因此实际上不可能从这种合金生产出优质的永磁体。 \n\n [0078] 像本发明的优选实施方式的合金一样,特别是与硼含量相对较高的硼和稀土元素R含量相对较低(小于10at%)的材料合金一样,即使这种合金的熔体被冷却也是如此。 低速结晶相 2 铁 14 根据常规方法,不能轻易地产生B相。在现有技术中,即使人们试图制造一种包含R的快速凝固的合金, 2 铁 14 通过充分降低熔体的冷却速度,使B相达到60体积%以上 2 铁 14 B相以及α-Fe相或它的前体会过多地沉淀,因此,当该合金被加热并结晶后,α-Fe相将进一步生长,从而大大降低合金的磁性能。 \n\n [0079] 因此,在本领域中广泛认为,获得具有高矫顽力的纳米复合磁体的最佳方法是通过熔融纺丝工艺以增加的速率冷却合金熔体,以首先使大部分合金非晶化,然后形成 通过加热和结晶无定形相,获得高度精细和均匀的结构。 这是因为他们认为获得微细晶粒均匀分布的纳米复合结构是理所当然的,除了通过易于控制的热处理工艺使非晶相结晶外,没有其他选择。 \n\n [0080] 基于这种普遍的信念,W。C. Chan等人报道了一种获得Nd的技术。 2 铁 14 B和α-Fe相的晶粒尺寸为几十纳米。 根据Chan的技术,将非晶态的前者La添加到材料合金中。 接下来,将原料合金熔融纺丝以获得主要由非晶相组成的快速凝固的合金。 然后将合金加热并结晶以形核并长大Nd 2 铁 14 B和α-Fe相同时发生。 参见W. C. Chan等人,“难熔金属对α-Fe/ R磁性的影响 2 铁 14 B型纳米复合材料”,IEEE Trans。 真是的 5号,INTERMAG。  99,Kyongiu,韩国,第3265-3267页,1999年。该文章还教导说,添加极少量(例如2 at%)的难熔金属元素(如Ti)可改善磁性能,并且Nd的摩尔分数 ,稀土元素,最好从约9.5原子%增加到约11.0原子%,以减小Nd的晶粒尺寸 2 铁 14 B和α-Fe相添加难熔金属以抑制硼化物(如R) 2 铁 23 乙 3  和铁 3 产生B并制成基本上由Nd组成的磁铁 2 铁 14 B和α-Fe相。 \n\n [0081] 根据Chan的技术,用于纳米复合磁体的快速凝固的合金是通过熔融纺丝工艺制备的,其中熔融合金通过喷嘴喷射到高速旋转的冷却辊的表面上。 熔体纺丝工艺对于制造非晶态快速凝固的合金是适当有效的,因为这种类型的工艺确保了极高的冷却速度。 \n\n [0082] 相反,根据本发明的优选实施例,通过带材铸造工艺以比通过已知的熔融纺丝工艺获得的冷却速率低的冷却速率来冷却熔融合金。 但是,添加剂Ti不仅可以抑制快速凝固过程中γ-Fe相的成核(冷却时转变为α-Fe),而且还可以抑制加热期间像α-Fe相这样的软磁性相的晶粒长大 /结晶过程。 结果,形成快速凝固的合金,其中R的细晶粒 2 铁 14 B相分布均匀,可获得。 \n\n [0083] 根据本发明的优选实施例,即使所使用的材料合金优选地包括相对较低百分比(例如,小于约10原子%)的稀土元素,表现出高磁化(或剩磁)和矫顽力的永磁体 可以大量生产,并且在其退磁曲线中显示出出色的环路矩形度。 \n\n [0084] 根据本发明的优选实施方式,可以通过使Nd增加矫顽力。 2 铁 14 B相成核并在冷却过程中更快,更早地生长,从而使Nd 2 铁 14 B相增加了其体积百分比,并且还通过抑制了软磁相的晶粒粗化。 同样,可以增加磁化强度,这可能是因为添加剂Ti可以从快速凝固的合金中存在的富含B的非磁性非晶态相中生成硼化物相(例如,铁磁性铁基硼化物),并且可以减小合金中硼的体积百分比。 非磁性无定形相保留在加热和结晶的合金中。 \n\n [0085] 在下文中,将进一步详细描述本发明的优选实施方式的铁基稀土合金磁体。 \n\n [0086] 首先,是具有通式(Fe 1-m Ť m )  100 xy-z-n (B 1-p C p ) x [R y 钛 z 中号 N ,准备好了。 式中,T为选自Co和Ni中的至少一种元素。  R是选自Y(钇)和稀土元素中的至少一种元素。  M是选自Al,Si,V,Cr,Mn,Cu,Zn,Ga,Zr,Nb,Mo,Ag,Hf,Ta,W,Pt,Au和Pb的至少一种元素。 摩尔分数x,y,z,m,n和p优选满足以下不等式: \n\n [0087] 10 at% [0088] 6 at%≦y [0089] 0.5at%≤z≤12at%; \n\n [0090] 0≤m≤0.5; \n\n [0091] 0 at%≦n≦10 at%; 和 \n\n [0092] 0≦p≦0.25 \n\n [0093] 接下来,进行冷却步骤,具体地,通过带钢铸造工艺在减压气氛中将原料合金的熔体快速冷却,从而制成包含R的快速凝固的合金。 2 铁 14 具有约60体积%或更大的平均晶体晶粒尺寸(例如,约150nm或更小)的B相。 \n\n [0094] 然后将以此方式获得的快速凝固的合金加热并结晶,以形成包含R的纳米复合结构。 2 铁 14 B和铁磁性铁基硼化物相。 作为软磁性相,除了铁基硼化物相之外,还可以包括微晶α-Fe相。 熔体被快速冷却,快速凝固的合金在这样的条件下被加热和结晶: 2 铁 14 在纳米复合结构中,B相将具有约20nm至约200nm的平均晶粒尺寸,并且硼化物相和α-Fe相将具有约1nm至约50nm的平均晶粒尺寸。 \n\n [0095] 根据本发明的优选实施方案,添加剂Ti可以有助于产生大量的R。 2 铁 14 当熔融合金被快速冷却和固化时,B相优选。 \n\n [0096] 在合成磁体中,R 2 铁 14 B相的平均晶粒尺寸大于铁基硼化物或α-Fe相的平均晶粒尺寸。 即使硬磁R 2 铁 14 B相具有相对较大的平均晶粒尺寸,软磁性相如α-Fe相具有足够小的平均晶粒尺寸。 因此,这些组成相通过交换相互作用而磁耦合在一起,并且软磁性相的磁化方向受到硬磁性相的约束。 因此,合金总体上在其退磁曲线中表现出优异的环状矩形性。 \n\n [0097] 在本发明的优选实施例中,如果适当地控制包括合金成分,合金冷却速率和热处理温度的各种工艺条件,则饱和磁化强度等于或什至更高的铁基硼化物和α-Fe相。  R的 2 铁 14 可以产生B相。 产生的铁基硼化物的例子包括Fe 3 B(饱和磁化强度约为1.5 T)和Fe 23 乙 6  (饱和磁化强度约为1.6 T)。 在这种情况下,R 2 铁 14 B相的饱和磁化强度约为1.6 T,其中R为Nd,而α-Fe相的饱和磁化强度约为2.1T。 \n\n [0098] 在本发明方法的优选实施方案中,容易生产那些铁磁性的铁基硼化物。 原因是当快速凝固的合金中,大部分由R组成 2 铁 14 制成B相后,凝固合金中存在的非晶相应含有过量的硼。 因此,当合金被加热和结晶时,过量的硼将容易与其他元素结合,从而使那些硼化物成核并大量生长。 但是,如果非晶态相中所含的硼与其他元素结合并在热处理之前生成低磁化强度的化合物,则整个磁体的磁化强度将大大降低。 如本文所用,术语“非晶相”不仅指原子排列充分无序的相,还指包含用于结晶的胚,极小的晶体区域(尺寸:几纳米或更小)和/或原子的相。 集群。 更具体地,术语“非晶相”是指具有通过X射线衍射分析或TEM观察不能定义的晶体结构的任何相,否则,具有通过X射线衍射分析或TEM观察可清楚地识别的晶体结构的任何相。 在本文中将“结晶相”称为“结晶相”。 \n\n [0099] 本发明人通过实验发现并证实,仅当添加Ti时,与诸如V,Cr,Mn,Nb或Mo的任何其他金属元素添加剂相反,磁化强度不会降低而是会增加。  ,退磁曲线的环路矩形度比上述任何元素的环形矩形度要好得多。 因此,本发明人相信Ti在抑制和最小化具有低磁化强度的硼化物中起着关键作用。 特别地,当具有由本发明的优选实施方式限定的组成的材料合金中包含相对少量的B和Ti时,在对合金进行热处理时,具有铁磁特性的铁基硼化物将容易生长。 在这种情况下,非磁性非晶相中包含的硼将被吸收到铁基硼化物中。 因此,保留在加热和结晶的合金中的非磁性非晶态相会降低其体积百分比,而铁磁性晶相则会增加其体积百分比,从而增加剩磁B r 。 \n\n [0100] 此外,在添加Ti的情况下,α-Fe相的晶粒生长被抑制并最小化,并且实现了优异的硬​​磁性能。 另外,R以外的铁磁相 2 铁 14 可以生成B和α-Fe相,因此可以在合金中形成包含三个或更多铁磁相的结构。相反,其中任何其他金属元素(例如Nb,V,Cr等)(不含Ti) 添加α-Fe相的晶粒生长在α-Fe相迅速生长且α-Fe相的磁化方向不能被α之间的交换耦合有效地约束的较高温度范围内显着地进行。  -铁和硬磁相。 结果,退磁曲线将大大降低环路矩形度。 \n\n [0101] 应该注意的是,即使在添加Nb,Mo或W而不是Ti的情况下,通过在没有α-Fe相的较低温度范围内对合金进行热处理,也可以获得良好的硬磁性能,包括优异的去磁曲线的环形矩形性 沉淀。 但是,在如此低的温度下进行了热处理的合金中,R 2 铁 14 B结晶颗粒将分散在非磁性非晶相中,并且该合金不具有纳米复合磁体结构。 同样,如果合金在更高的温度下进行热处理,则α-Fe相会形核并从非晶相中生长出来。 与添加Ti的情况不同,成核后,α-Fe相迅速生长并过大地增大了晶粒尺寸。 结果,通过α-Fe与硬磁性相之间的交换耦合,不再能够有效地约束α-Fe相的磁化方向,并且退磁曲线的环路矩形度显着恶化。 \n\n [0102] 另一方面,在添加V或Cr而不是Ti的情况下,这些添加金属元素中的任一个与Fe反铁磁耦合以形成固溶体,从而大大降低了磁化强度。 \n\n [0103] 相反,在向材料合金中添加Ti的情况下,α-Fe相的结晶动力学变慢,即α-Fe相成核并生长需要更长的时间。因此,本发明人认为 钕 2 铁 14 在α-Fe相开始粗大生长之前,B相开始成核并生长。 因此,添加Ti时,Nd的晶粒 2 铁 11 在α-Fe相生长过多之前,B相可以充分生长并均匀分布。 \n\n [0104] 因此,仅当添加Ti时,α-Fe相的晶粒粗大化被充分抑制且最小化,因此,可以获得具有铁磁性的铁系硼化物。 此外,Ti和B和C在熔化淬火过程中作为延迟Fe初始晶体(即将转变为α-Fe的γ-Fe)结晶的元素起着重要作用,从而有助于 生产过冷的液体。 因此,即使包括Ti的合金的熔体以大约10到10之间的相对较低的冷却速率被快速冷却并固化。 2 °C /秒和大约10 4 °C / sec,一种快速凝固的合金,其中晶粒尺寸过大的α-Fe相尚未析出,但包含微晶R 2 铁 14 可获得约60%(体积)或更高的B相(有时也包括铁基硼化物)。 \n\n [0105] 在本发明的优选实施例中,是一种带材浇铸工艺,其中将熔体直接通过射孔(即上述示例性导向装置)倒入冷却辊上,而无需使用喷嘴孔口控制熔体的流速, 优选地被采用。 因此,与需要使用喷嘴孔口控制流量的熔体纺丝工艺相比,本发明的工艺具有更高的生产率和成本效益。 为了使R-Fe-B型稀土合金的熔体在即使通过薄带连铸法也可实现的冷却速度范围内非晶化,通常优选以约10原子%以上添加B(硼)。 因此,即使快速凝固的合金已经加热并结晶,高B浓度的非磁性非晶相也将保留在金属合金结构中。 也就是说,不能获得均匀的微晶结构。 结果,铁磁相的体积百分比减小并且磁化强度下降。 但是,如果如本发明的优选实施方式中那样添加Ti,则观察到上述现象。 结果,产生了具有高饱和磁化强度的铁基硼化物,并且磁化强度出乎意料地增加。 \n\n 首选组成 \n\n [0106] 如果B和C的总摩尔分数x为约10at%或更小,则难以制备期望的快速凝固的合金,其中微晶R 2 铁 14 B和非晶相共存,冷却速度大约为10 2 °C /秒至约10 5 °C /秒 而且,即使在此之后对合金进行热处理,所得到的矫顽力也不会很高。 另外,当摩尔分数x为约10at%或更低时,不再产生具有高饱和磁化强度的铁基硼化物。 铁基硼化物中包含的硼与Ti结合形成化学稳定的化合物。 因此,铁基硼化物的百分比越高,所得磁体的耐蚀性越高。 由于这些原因,x应优选大于约10at%。 另一方面,如果B和C的总摩尔分数x超过约25at%,则即使在合金已经被加热和结晶之后,残留在合金中的非晶相的体积百分比也会增加。  α-Fe相的饱和磁化强度比任何其他组成相都高,不利地减小了,剩磁B r  结果减少了。 考虑到这些考虑,B和C的总摩尔分数x优选大于约10原子%且等于或小于约25原子%,更优选大于约10原子%且等于或小于约17原子。 在 % \n\n [0107] C与B和C的(原子)比p优选在约0至约0.25之间。 为了获得添加剂C所期望的效果,C比p应优选等于或大于约0.01。 原因如下。 如果p远小于约0.01,则即使添加C也几乎无法获得预期的效果。 另一方面,如果p远大于约0.25,则产生的α-Fe相的体积百分比增加太多,从而导致所得磁性能的劣化。 比率p的下限优选为约0.02,而其上限优选为约0.20。 比p更优选在约0.08至约0.15之间。 \n\n [0108] R是选自稀土元素(包括Y)中的至少一种元素。 优选地,R优选地基本上不包括La或Ce。 这是因为如果包含La或Ce,则R中包含R(通常为Nd) 2 铁 14 B相应替换为La或Ce,从而降低退磁曲线的矫顽力和环路矩形度。 但是,如果存在极少量(即约0.5at%或更少)的La或Ce作为不可避免地包含的杂质,则磁性能不会受到如此严重的影响。 因此,本文中的“基本上不含La(Ce)”或“基本上不含La(Ce)”是指La(Ce)的含量为约0.5at%以下。 \n\n [0109] 更具体地,R优选包括Pr或Nd作为必不可少的元素,其一部分可以用Dy和/或Tb代替。如果R的摩尔分数y小于约6at%,则具有微晶R的细晶粒 2 铁 14 实现矫顽力所需的B结构不能充分结晶,因此所需的高矫顽力H J 另一方面,如果R的摩尔分数y等于或大于约10原子%,则具有铁磁性能的铁基硼化物的百分比降低,而富B的非磁相的百分比降低。 相反增加。 结果,不能形成预期的纳米复合结构并且磁化强度下降。 由于这些原因,稀土元素R的摩尔分数y优选等于或大于约6原子%但小于约10原子%(例如,从约6原子%至约9.5原子%),更优选为 约8原子%至约9.3原子%,最优选约8.3原子%至约9.0原子%。 \n\n [0110] 当熔融合金被快速冷却和固化时,添加剂Ti有效地有助于使硬磁相比软磁相更早地成核和生长。 另外,添加剂Ti增加矫顽力H  J ,剩磁B r  和最大能量积(BH)  最高 并改善退磁曲线的环路矩形度。 \n\n [0111] 如果Ti的摩尔分数z小于约0.5at%,则即使添加Ti也不能完全获得上述效果。 然而,如果Ti的摩尔分数z超过约12原子%,则即使在合金已经被加热和结晶之后,残留在合金中的非晶相的体积百分比也会增加,并且剩磁B r  减少。 考虑到这些考虑,Ti的摩尔分数z优选在约0.5原子%至约12原子%的范围内。 更优选的z范围的下限为约10at%,其上限为约6at%。甚至更优选的z范围的上限为约5at%。 \n\n [0112] 而且,B和C的总摩尔分数x越高,越可能形成无定形相,例如包括过量百分比的硼。 因此,同样由于这个原因,应当优选将Ti的摩尔分数z设置得更高。  Ti对B具有很强的亲和力,并且在硬磁相的晶界周围凝聚。 但是,如果Ti的摩尔分数z与B的摩尔分数x的比率太高,则Ti将不再存在于晶界周围,而是将结合到R中。 2 铁 14 B化合物,因此可能降低磁化强度。 但是,如果z / x比率太低,则会大量产生富含B的非磁性非晶相。 本发明人通过实验证实,优选控制摩尔分数x和z以满足0.05≤z/x≤0.4的不等式,更优选满足0.1≤z/x≤0.35的不等式,甚至更优选满足 不等式为0.13≤z/x≤0.3。 \n\n [0113] 为了实现各种期望的优点和效果,可以添加金属元素M。  M是选自Al,Si,V,Cr,Mn,Cu,Zn,Ga,Zr,Nb,Mo,Hf,Ta,W,Pt,Pb,Au和Ag的至少一种元素。 \n\n [0114] 除了元素B,C,R,Ti和M之外,材料合金的其余部分可以单独是Fe。 另外,也可以用选自Co和Ni中的至少一种过渡金属元素T代替Fe的一部分,因为在这种情况下也可以得到期望的硬磁特性。 但是,如果铁中至少有50%的铁被T取代,则剩余的B r  因此,无法获得约0.7T以上的铁,因此,Fe的置换率优选为约0%〜约50%。另外,通过将Co置换为一部分Fe,可以使去磁曲线的环状矩形性提高,并且居里(Curie)  R的温度 2 铁 14 B相增加,因此增加了合金的热阻。 可被Co替代的Fe的百分比优选在约0.5%至约40%的范围内。 \n\n [0115] 在下文中,将参考附图详细描述本发明的优选实施例的具体示例。 \n\n [0116] 将描述本发明的第一特定优选实施例。 \n\n [0117] 在该优选实施例中,优选使用图1所示的带铸机制备快速凝固的合金。 1 。 合金制备过程在惰性气体气氛中进行,以防止包含易于氧化的稀土元素R和Fe的原料合金被氧化。 惰性气体可以是例如氦或氩的稀有气体或氮气,或其他合适的气体。 氦或氩的稀有气体比氮气更可取,因为氮气相对容易地与稀土元素R反应。 \n\n [0118] 图1所示的带材连铸机包括: 将图1所示的装置布置在腔室(未示出)中,在该腔室中可形成减压惰性气氛。 如图1所示。 如图1所示,带材连铸机优选包括熔化坩埚。 1  港口拥挤 2  底部有一个冷却辊 7 ,包括落水管的指南 4  和拍摄 5 和刮刀气雾 9 。 首先,将材料合金在熔融坩埚中熔融 1 。 接下来,融化 3  通过装满端口排干 2  然后通过落水管引导 4  然后射击 5  放在冷却辊上 7  以便在其上迅速冷却并固化 3 ,已在冷却辊上迅速固化 7 ,然后离开滚筒 7  细条 8  作为滚筒 7  旋转。 刮刀气雾 9  提供用于制造薄带合金 8  容易从冷却辊上剥离 7 。 \n\n [0119] 熔化的坩埚 1  用于喂入熔体 3 通过将材料合金熔化而制成, 5  以基本恒定的进料速度。 通过倾斜熔化坩埚可以任意控制进料速度 1  例如以期望的角度。 水落管 4  它不是必不可少的部件,但可以省略。 在这种情况下,融化 3  可以直接从熔化的坩埚中倒出 1  拍摄 5 。 \n\n [0120] 冷却辊的外圆周 7  最好由导热性相对较好的材料(例如铜)制成。 滚筒 7  可以优选具有约30cm至约100cm的直径和约15cm至约100cm的宽度。 滚筒 7  可以通过电动机(未示出)以预定的速度旋转。 通过控制该旋转速度,冷却辊的表面速度 7  可任意调节。 该带材连铸机实现的冷却速度可控制在约1×10的范围内 2 °C /秒至约1×10 5 通过选择适当的冷却辊转速来达到°C / sec 7 , 例如。 \n\n [0121] 芽的表面 5  在其上融化 3  被引导形成相对于水平面X的倾斜角α。枝条远端之间的距离 5  和冷却辊的表面 7  最好在几毫米或更小范围内 5  布置成使得连接芽远端的线 5  到冷却辊的中心 7  相对于水平面X形成角度β(0≤β≤90度)。枝条的倾斜角α 5  角度β优选地在大约1度至大约80度之间,更优选地在大约5度至大约60度之间。角度β优选地在大约10度至大约55度之间。 \n\n [0122] 倒入嫩芽后 5 ,融化 3  从拍摄的尽头将充满 5  到冷却辊的表面 7 从而形成熔池 6  在其上。 \n\n [0123] 拍摄 5  可以纠正熔体的流动 3  通过延迟熔体的流速 3  达到暂时保留熔体流动的程度 3 从熔化的坩埚不断进料 1  以预定的流速。 该整流作用可以通过挡板来进一步提高,该挡板用于选择性地阻止熔体的表面流动。 3  倒在笋上 5 。 通过拍摄 5 ,融化 3  可以在冷却辊的长度方向上进行修整,使其具有基本恒定的宽度 7 。 如本文所用,冷却辊的“纵向” 7  相当于辊子的轴向 7  (即,纸面指示的方向)。 还有,融化 3  被撒满的东西可以散布成具有基本均匀的厚度。 如果熔化引导面的芽 5  通过调节其倾斜角α,可以很好地控制熔体的进料速度。 由于自身重量,熔体 3  顺着枝条倾斜的导向面流下 5 。 因此,融化 3  具有基本平行于水平(即,X轴)方向的动量。 也就是说,芽的倾斜角α越大 5 ,熔体的流速越高 3  而且其势头更大 \n\n [0124] 另外,拍 5  也可以调节熔体的温度 3  即将到达冷却辊 7 。 熔体温度 3  拍摄中 5  优选为比其液相线温度高约100℃或更高。这是因为如果熔体的温度 3  太低,则TiB的初始晶体 2 例如,其将影响所得快速凝固合金的性能,其可能局部成核并保留在快速凝固合金中。 另外,如果融化的温度 3  太低,那么融化 3  应该增加其粘度并更可能飞溅。 熔化温度 5  可通过调节熔体温度来控制 3  从熔化的坩埚中充满 1  朝着拍摄 5  或芽的热容量 5  本身,例如。 如有必要,可以为此目的专门提供一个射灯加热器(未显示)。 \n\n [0125] 拍摄 5  该优选实施例的优选地包括多个排水口,它们在冷却辊的轴向上以规则的间隔彼此间隔开。 7 ,在其面对冷却辊外周的远端 7 。 这些排放口中的每一个的宽度(对应于每个熔体流的宽度)优选地在约0.5cm至约10.0cm的范围内,更优选地在约0.7cm至约4.0cm的范围内。 在本优选实施例中,每个熔体流在其相应的排出口处具有约1cm的宽度。 应当注意的是,随着熔体流远离其相关的排水口,每个熔体流都倾向于横向增加其宽度。 芽上有多个排水口的地方 5  为了形成多股熔体流(如在本优选实施例中所做的那样),每对相邻的熔体流不应相互接触 \n\n [0126] 融化后 3  已经倒在笋上了 5 ,融化 3  分离成多个熔体流,以使每个熔体流在冷却辊轴向上的宽度与其相关联的排水口的宽度基本相同 7  然后,每个熔体流都与冷却辊接触 7 。 之后,每次熔体流动 3 ,它已经装满冷却辊 7  以预定宽度在辊子的圆周表面上向上移动 7  作为滚筒 7  旋转。 这样,熔体流动 3  与滚筒一起移动时迅速冷却 7 。 应该注意的是,为防止熔体泄漏,枝条远端之间的距离 5  和冷却辊 7  应当优选为约3mm或更小,更优选为约0.4mm至约0.7mm。 \n\n [0127] 每对相邻的排水管之间的间隔优选在约1cm至约10cm之间。 这样,熔体 3  可以与冷却辊的外周接触 7  在彼此分开的位置。 然后,可以有效地冷却通过其相关联的排水口流入的每种熔体流。 因此,即使融化 3  倒在笋上 5  以增加的速率,可以实现所需的冷却速率。 \n\n [0128] 要注意的是拍 5  不必具有上述配置。 或者,拍摄 5  可能只有一个排水口,或者每个熔体流都可能以增加的宽度装满。 拍摄的其他修改 5  也可以根据需要制成。 \n\n [0129] 融化后 3  已在旋转冷却辊的外周迅速固化 7 ,快速凝固的合金离开冷却辊 7  作为薄带凝固合金 8 。 在本优选实施例中,已经通过相关联的一个排水管灌注的每个熔体流被固化为预定宽度的条。 然后,凝固的合金 8  被收集器(未示出)压碎并收集。 \n\n [0130] 如上所述,与熔融纺丝工艺不同,带钢铸造工艺不使用任何喷嘴。 也就是说,带钢铸造过程不会遇到与熔融纺丝过程相关的各种问题中的任何一个。 具体地,在带材浇铸过程中,熔体的喷射速度不受喷嘴直径的限制,或者熔体在喷嘴处也不会凝固,从而使喷嘴意外地被凝固的合金堵塞。 因此,带钢铸造工艺对于批量生产非常有效。 此外,不需要喷嘴加热设备或熔融头压力控制机构。 结果,有利地大大降低了初始设备和设备运行成本。 \n\n [0131] 而且,在熔体纺丝工艺中,喷嘴不可回收,因此即使通常需要很高的加工成本来形成喷嘴,喷嘴也应一次性使用后丢弃。 相比之下,带材浇铸工艺允许重复使用枪shoot,因此需要低得多的设备运行成本。 \n\n [0132] 此外,在带材浇铸过程中,与熔融纺丝过程相比,冷却辊可以较低的速度旋转,并且所浇铸的熔融物的重量可以增加。 因此,所得的薄带快速凝固合金可以较厚。 \n\n [0133] 然而,在带钢铸造过程中,熔融合金不会强烈地喷射到冷却辊的表面上。 7  以大约10 m / sec或更高的相对较高的表面速度旋转,很难形成熔池 6  在冷却辊表面 7  足够稳定而且,由于不使用喷嘴,因此熔体施加到辊表面上的压力很低。因此,在熔体应进入的区域中,在熔体和辊表面之间可能会产生很小的间隙。 与滚筒表面紧密接触。 因此,通过带材浇铸工艺确保的熔体/辊表面接触不如通过熔体纺丝工艺确保的熔体/辊表面接触。 稍后将进一步详细描述这种不良的接触问题及其解决方法。 \n\n [0134] 在本优选实施例中,熔体进料速率的上限(即,每单位时间加工的熔体的重量)被定义为熔体表面接触面积的每单位宽度的进料速率。 在带钢铸造工艺中,熔体与冷却辊接触,从而在冷却辊的轴向上具有预定的接触宽度。 因此,熔体淬火条件很大程度上取决于每单位接触宽度的熔体进料速率。 \n\n [0135] 如果熔体进料速率太高,则熔体由冷却辊以降低的速率淬火。 结果,无意地制造了没有充分地非晶化或纳米结晶但是包括过大的体积百分比和过大的粒径的结晶组织的快速凝固的合金。 也就是说,无法获得适用于制造纳米复合磁体的材料合金。 因此,根据本发明的优选实施方式,每单位接触宽度(cm)的进给速度(kg / min)优选为约3kg / min / cm或更小。 \n\n [0136] 同样,在使三个熔体流与冷却辊接触以使每个熔体流具有约2cm的接触宽度的情况下,进料速率应优选为约0 5 kg / min / cm或更大。 然后,实现约3 kg / min或更高的处理速度 \n\n [0137] 在本优选实施例中,将熔体以落入规定范围内的进给速率装到冷却辊上,该冷却辊以落入特定范围内的表面速度旋转。 以这种方式,即使通过带铸工艺也可以以高生产率制造期望的快速凝固的合金。 带式铸造工艺不使用任何喷嘴,例如,与喷射铸造工艺一样,这大大增加了工艺成本。 因此,不需要喷嘴成本,并且消除了由于喷嘴堵塞而导致的生产过程停止所引起的问题。 \n\n [0138] 在本优选实施例中,冷却辊的表面速度可以为约5m / sec以上,但是优选小于约20m / sec。 原因如下。 如果辊表面速度小于约5m / sec,则辊的冷却能力太低而不能获得所需的快速凝固的合金。 另一方面,如果辊表面速度为约20m / sec以上,则辊难以使熔体上升。 取而代之的是,冷却并凝固的合金将散布成薄片状,因此可能难以按预期收集合金。 辊的最佳表面速度随冷却辊的结构或材料以及熔体的进料速度而变化。 但是,如果表面速度太高,则所得的薄带合金将非常薄。 当条带太薄时,其以低密度堆积并且在腔室中占据较大体积。 更糟糕的是,如果表面速度过高,则将细条状合金粉碎后得到的磁铁粉末的颗粒将变扁平,因此,当成型这种磁铁粉末时,磁铁粉末的流动性也会降低。 因此,可以以减小的百分比用这种磁体粉末填充模腔。 结果,所得到的磁体具有降低的磁体粉末百分比并且表现出劣化的性能。 另一方面,如果表面速度太低,则难以获得足够高的冷却速率。 考虑到这些方面,冷却辊的表面速度优选为约5m / sec至约20m / sec,更优选为约6m / sec至约15m / sec,甚至更优选为约10m / sec。  m / sec和约');
INSERT INTO `os_patent_instruction_text` VALUES (12947, 22776, '【0001】\n\n【発明の属する技術分野】\n\n本発明は、冷媒や潤滑油に長時間曝されるモータに組み込まれて使用されたりするなど、冷媒や潤滑油の存在下を使用環境とするアルカリ珪酸塩被膜を表面に有する希土類系永久磁石の当該被膜の劣化防止方法に関する。\n\n【0002】\n\n【従来の技術】\n\nNd-Fe-B系永久磁石に代表されるR-Fe-B系永久磁石やSm-Fe-N系永久磁石に代表されるR-Fe-N系永久磁石などの希土類系永久磁石は、資源的に豊富で安価な材料が用いられ、かつ、高い磁気特性を有していることから、特にR-Fe-B系永久磁石は今日様々な分野で使用されている。\n\nしかしながら、希土類系永久磁石は反応性の高い希土類金属:Rを含むため、大気中で酸化腐食されやすく、何の表面処理をも行わずに使用した場合には、わずかな酸やアルカリや水分などの存在によって表面から腐食が進行して錆が発生し、それに伴って、磁石特性の劣化やばらつきを招く。さらに、錆が発生した磁石を磁気回路などの装置に組み込んだ場合、錆が飛散して周辺部品を汚染する恐れがある。\n\n従って、希土類系永久磁石の表面にアルカリ珪酸塩被膜を耐食性被膜として形成することが古くから行われている。\n\n【0003】\n\n【発明が解決しようとする課題】\n\nところで、冷蔵庫や空調機などの冷凍機の冷凍サイクルを構成する圧縮機に適用されるモータは、圧力変化が激しく、また、100℃以上の高温にもなる冷媒(密閉型圧縮機においては冷凍機油として潤滑油が通常混合される)に長時間曝されて使用される。従って、例えば、このような過酷な環境で使用されるモータに組み込まれる希土類系永久磁石の表面に形成される耐食性被膜は、長期に渡って劣化することなく高い耐食性を発揮するものであることが必要である。\n\nまた、潤滑油に長時間曝されて使用される自動車部品に適用されるモータにおいても、潤滑油は自動車の使用環境によっては100℃以上の温度変化を伴うことから、過酷な使用環境にある。従って、例えば、このようなモータに組み込まれる希土類系永久磁石の表面に形成される耐食性被膜も、長期に渡って劣化することなく高い耐食性を発揮するものであることが必要である。\n\n【0004】\n\nアルカリ珪酸塩被膜は古くから知られている耐食性被膜の一つであり、日常の環境で使用される希土類系永久磁石の表面に形成される耐食性被膜としては十分な機能を発揮する。しかしながら、冷媒や潤滑油に長時間曝されるモータに組み込まれて使用されたりするなど、冷媒や潤滑油の存在下を使用環境とする希土類系永久磁石の表面に形成される耐食性被膜としてはその機能は十分なものではなく、このような過酷な使用環境においては、早期に被膜の劣化が起こって磁石の表面から被膜が剥離したりして、安定した耐食性を発揮することができなくなる。\n\nそこで本発明は、冷媒や潤滑油の存在下を使用環境とするアルカリ珪酸塩被膜を表面に有\n\nする希土類系永久磁石を当該環境で使用するに際し、当該被膜の劣化を防止して長期に渡って高い耐食性を発揮せしめる方法を提供することを目的とする。\n\n【0005】\n\n【課題を解決するための手段】\n\n本発明者らは、上記の点に鑑みて種々の検討を行った結果、アルカリ珪酸塩被膜中に熱硬化性樹脂を均一分散させることで、アルカリ珪酸塩と熱硬化性樹脂とが相俟って均質な三次元的ネットワーク構造を形成し、冷媒や潤滑油の存在下を使用環境とする場合においても被膜の劣化を効果的に防止することができることを見出した。なお、米国特許第6174609号公報には、3重量%〜10重量%のアルカリ珪酸塩と90重量%〜97重量%の熱硬化性樹脂を構成成分とする被膜を表面に有する希土類系永久磁石が開示されているが、当該公報には本発明者らによるこのような知見に関する記載や示唆はない。\n\n【0006】\n\n本発明は上記の知見に基づいてなされたものであり、本発明のアルカリ珪酸塩被膜の劣化防止方法は、請求項1記載の通り、絶対圧力範囲が0.1MPa〜5MPaで温度範囲が-30℃〜200℃になる冷媒(冷凍機油として潤滑油が混合されていてもよい)の存在下を使用環境とするアルカリ珪酸塩被膜を表面に有する希土類系永久磁石を当該環境で使用するに際し、被膜中に、ソープフリー水溶性エマルジョン樹脂として処理液に分散されていた熱硬化性樹脂を、0.1重量%〜50重量%の含量で均一分散させることを特徴とする。\n\nまた、本発明のアルカリ珪酸塩被膜の劣化防止方法は、請求項2記載の通り、-30℃〜200℃の温度範囲において少なくとも100℃以上の温度変化を伴う潤滑油の存在下を使用環境とするアルカリ珪酸塩被膜を表面に有する希土類系永久磁石を当該環境で使用するに際し、被膜中に、ソープフリー水溶性エマルジョン樹脂として処理液に分散されていた熱硬化性樹脂を、0.1重量%〜50重量%の含量で均一分散させることを特徴とする。\n\nまた、請求項3記載の方法は、請求項1または2記載の方法において、アルカリ珪酸塩被膜が珪酸リチウムを構成成分とすることを特徴とする。\n\nまた、請求項4記載の方法は、請求項3記載の方法において、アルカリ珪酸塩被膜が更に珪酸ナトリウムを構成成分とすることを特徴とする。\n\nまた、請求項5記載の方法は、請求項4記載の方法において、被膜中におけるナトリウム含量が10重量%以下であることを特徴とする。\n\nまた、請求項6記載の方法は、請求項1乃至5のいずれかに記載の方法において、熱硬化性樹脂がアクリル変性エポキシ樹脂であることを特徴とする。\n\nまた、請求項7記載の方法は、請求項1乃至6のいずれかに記載の方法において、磁石単位表面積当たりの被膜付着量が0.01g/m2〜5g/m2であることを特徴とする。\n\nまた、請求項8記載の方法は、請求項1乃至7のいずれかに記載の方法において、水分を含む冷媒および/または潤滑油であることを特徴とする。\n\nまた、請求項9記載の方法は、請求項1記載の方法において、冷媒がHFC系冷媒であることを特徴とする。\n\n【0007】\n\n【発明の実施の形態】\n\n本発明のアルカリ珪酸塩被膜の劣化防止方法は、アルカリ珪酸塩被膜中に熱硬化性樹脂を均一分散させることを特徴とするものであり、かかる構成により、例えば、冷媒や潤滑油に長時間曝されるモータに当該被膜を表面に有する希土類系永久磁石を組み込んで使用しても、当該被膜は長期に渡って劣化することなく高い耐食性を発揮する。\n\n【0008】\n\nアルカリ珪酸塩被膜は、その構成成分として珪酸リチウムが好適に使用される。珪酸リチウムを構成成分とする被膜は、一般式:Li2O·nSiO2で表される珪酸リチウムの水溶液から形成されるものであり、耐食性に優れるという特性を本質的に有する。前記一般\n\n式中におけるnはモル比(SiO2/Li2O)を意味し、通常、nが1.5〜10の範囲にあるものが使用される。\n\n【0009】\n\nアルカリ珪酸塩被膜は、珪酸リチウムのみを構成成分とするものであってもよいが、珪酸リチウムに加えて更に珪酸ナトリウム(水ガラス)や珪酸カリウムや珪酸アンモニウムなどを構成成分とするものであってもよい。中でも珪酸ナトリウムを被膜の構成成分とすることで、被膜形成時の良好な造膜性および磁石との強固な密着性を確保することが可能となる。また、珪酸ナトリウムを被膜の構成成分とすれば、被膜に外傷やクラックなどが存在していても、珪酸ナトリウムが水にわずかに溶解して当該部分に浸透固化し、自己修復的耐食作用を発揮する。珪酸ナトリウムを被膜の構成成分とする場合、被膜中のその含量はナトリウム含量として10重量%以下にすることが望ましく、5重量%以下にすることがより望ましい。10重量%を越えると形成される被膜の耐水性に悪影響を及ぼすことがあり、これに起因して被膜の劣化を招く恐れがあるからである。\n\n【0010】\n\nアルカリ珪酸塩被膜中に均一分散させる熱硬化性樹脂としては、例えば、ポリエステル樹脂、アクリル樹脂、エポキシ樹脂、ウレタン樹脂、これらの変性樹脂(後述するアクリル変性エポキシ樹脂など)などが挙げられる。熱硬化性樹脂は被膜中に0.1重量%〜50重量%の含量で均一分散させることが望ましい。0.1重量%未満であると熱硬化性樹脂を均一分散させる効果が十分に発揮されない恐れがあるからである。一方、50重量%を越えると本質的に被膜の耐油性や耐湿性が劣ったり、被膜と磁石の表面との密着性が劣ったりする恐れがあることに加え、特に急激な温度変化を伴う場合などにおいて早期に被膜の劣化が起こって磁石の表面から被膜が剥離したりする恐れがあるからである。被膜中に均一分散させる熱硬化性樹脂の含量は、望ましくは1重量%〜30重量%であり、より望ましくは5重量%〜20重量%である。\n\n【0011】\n\nアルカリ珪酸塩被膜中に熱硬化性樹脂を均一分散させる方法としては、例えば、アルカリ珪酸塩水溶液に熱硬化性樹脂を均一分散させた処理液を調製し、この処理液を磁石の表面にスプレー塗装したり、処理液中に磁石を浸漬して浸漬塗装を行ったりした後、60℃〜300℃の温度条件下で1分間〜120分間加熱乾燥することで、アルカリ珪酸塩と熱硬化性樹脂を構成成分とする被膜を形成する方法が挙げられる。アルカリ珪酸塩被膜中に熱硬化性樹脂を均一分散させるためには、処理液中に熱硬化性樹脂を均一分散させることが肝要である。また、大量生産を念頭に置いた場合、調製される処理液は保存安定性に優れ、液寿命(ポットライフ)が長いことが理想である。以上の点に鑑みれば、アルカリ珪酸塩水溶液中に分散させる熱硬化性樹脂は、乳化剤(界面活性剤)が添加されていないソープフリー水溶性エマルジョン樹脂が望ましい。アルカリ珪酸塩水溶液はアルカリ性を呈するので(pH10〜pH13:このようなpHは磁石腐食の問題を生じさせることがなく作業環境上の面においても望ましい)、熱硬化性樹脂を乳化剤(特にノニオン系界面活性剤)が添加された水溶性エマルジョン樹脂として分散させた場合、液中においてエマルジョン破壊が生じて樹脂のゲル化が起こることが多いため、熱硬化性樹脂が均一分散した処理液を調製することが困難となり、その結果、アルカリ珪酸塩被膜に熱硬化性樹脂を均一分散させることができなくなる恐れがあるからである。また、このような処理液は当然のことながら以上のような現象に起因して液寿命の点においても劣るからである。\n\n【0012】\n\n熱硬化性樹脂としてアクリル変性エポキシ樹脂をソープフリー水溶性エマルジョン樹脂としてアルカリ珪酸塩水溶液中に分散させて調製した処理液は、処理液中におけるアクリル変性エポキシ樹脂の均一分散性に優れるようである。従って、この処理液を使用した場合、アルカリ珪酸塩被膜中においてアクリル変性エポキシ樹脂が均一分散し、優れた被膜劣化防止効果を発揮する。なお、アクリル変性エポキシ樹脂とは、ビスフェノール型エポキシ樹脂とカルボキシル基含有アクリル樹脂を反応させることにより得られる樹脂を意味する(必要ならば特開平6-136317号公報を参照のこと)。ビスフェノール型エポキ\n\nシ樹脂としては、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、ノボラック型エポキシ樹脂、これらのエポキシ樹脂とアクリル酸、メタクリル酸、ポリカルボン酸、これらの酸無水物、脂肪酸、ポリエーテルポリオール、ポリエステルポリオール、ポリアミドアミンなどを反応させた変性エポキシ樹脂などが挙げられる。カルボキシル基含有アクリル樹脂は、アクリル酸、メタクリル酸、クロトン酸、イタコン酸、マレイン酸、フマル酸などの重合性不飽和カルボン酸を必須モノマー成分とするアクリル共重合体である。カルボキシル基含有アクリル樹脂の重合には、重合性不飽和カルボン酸以外に、その他のモノマー成分として、例えば、スチレン、2-メチルスチレンなどのスチレン系モノマー、アクリル酸メチル、アクリル酸エチル、アクリル酸イソプロピル、アクリル酸n-ブチル、アクリル酸イソブチルなどのアクリル酸エステルモノマー、メタクリル酸メチル、メタクリル酸エチル、メタクリル酸イソプロピル、メタクリル酸n-ブチル、メタクリル酸イソブチルなどのメタクリル酸エステルモノマーなどのうち一種または二種以上が使用される。熱硬化性樹脂は、メラミン樹脂やフェノール樹脂などの架橋硬化剤を必要に応じて含有していてもよい。本発明においては、アクリル変性エポキシ樹脂とメラミン樹脂とからなるソープフリー水溶性エマルジョン樹脂が好適に使用される。\n\n【0013】\n\n例えば、アルカリ珪酸塩被膜中に熱硬化性樹脂を0.1重量%〜50重量%の含量で均一分散させるための好適な処理液としては、熱硬化性樹脂をソープフリー水溶性エマルジョン樹脂として0.1重量%〜5重量%、望ましくは0.5重量%〜3重量%含み、アルカリ珪酸塩を2重量%〜30重量%含む処理液が挙げられ、この組成範囲内でアルカリ珪酸塩被膜中に均一分散させる熱硬化性樹脂が所望量となるように適宜調整することが望ましい。なお、アルカリ珪酸塩として更に珪酸ナトリウムを処理液中に含ませる場合は、処理液中におけるナトリウム含量が1重量%以下となるようにすることが望ましい。\n\n【0014】\n\n熱硬化性樹脂を均一分散させたアルカリ珪酸塩被膜は、磁石単位表面積当たりの被膜付着量が0.01g/m2以上(膜厚にして15nm程度以上)となるように形成することが望ましい。0.01g/m2よりも少ないと耐食性被膜としての機能を十分に発揮できない恐れがあるからである。なお、被膜付着量の上限は特段限定されるものではないが、被膜付着量が多すぎると磁石の表面全体に対する均一付着性の確保が困難になり、接着剤をはじめとする有機樹脂との接着性に悪影響を及ぼす恐れがある。従って、以上の観点からは被膜付着量の上限は5g/m2とすることが望ましい。\n\n【0015】\n\n本発明に適用される希土類系永久磁石としては、例えば、R-Fe-B系永久磁石やR-Fe-N系永久磁石などの公知の希土類系永久磁石が挙げられる。中でも、R-Fe-B系永久磁石は、前述のように、磁気特性が高く、量産性や経済性に優れている上に、被膜との優れた密着性を有する点において望ましいものである。これらの希土類系永久磁石における希土類元素(R)は、Nd、Pr、Dy、Ho、Tb、Smのうち少なくとも1種、あるいはさらに、La、Ce、Gd、Er、Eu、Tm、Yb、Lu、Yのうち少なくとも1種を含むものが望ましい。\n\nまた、通常はRのうち1種をもって足りるが、実用上は2種以上の混合物(ミッシュメタルやジジムなど)を入手上の便宜などの理由によって使用することもできる。\n\nさらに、Al、Ti、V、Cr、Mn、Bi、Nb、Ta、Mo、W、Sb、Ge、Sn、Zr、Ni、Si、Zn、Hf、Gaのうち少なくとも1種を添加することで、保磁力や減磁曲線の角型性の改善、製造性の改善、低価格化を図ることが可能となる。また、Feの一部をCoで置換することによって、得られる磁石の磁気特性を損なうことなしに温度特性を改善することができる。\n\nなお、本発明に適用される希土類系永久磁石は、焼結磁石であってもボンド磁石であってもよい。\n\n【0016】\n\n熱硬化性樹脂を均一分散させたアルカリ珪酸塩被膜を表面に有する希土類系永久磁石は、\n\n例えば、冷蔵庫や空調機などの冷凍機の冷凍サイクルを構成する圧縮機に適用されるモータや自動車部品に適用されるモータなどに組み込まれて使用されるが、当該被膜は、HFC系冷媒(R410A、R407C、R134a、R125など)やHCFC系冷媒(R22、R32など)などの各種の冷媒、鉱物油やエステル油やエーテル油などの各種の潤滑油(冷凍機油)に長時間曝されても劣化することなく高い耐食性を発揮する。また、冷媒や潤滑油が水分を含む場合、当該水分が磁石の腐食を直接的に促進せしめたりすることがあるが、このような場合においても、アルカリ珪酸塩被膜中に熱硬化性樹脂を均一分散させることで磁石の腐食を効果的に防止することができる。\n\n【0017】\n\n【実施例】\n\n本発明を以下の実施例によってさらに詳細に説明するが、本発明はこれに限定されるものではない。\n\n【0018】\n\n実施例A:\n\n例えば、米国特許4770723号公報や米国特許4792368号公報に記載されているようにして、公知の鋳造インゴットを粉砕し、微粉砕後に成形、焼結、熱処理、表面加工を行うことによって得られた14Nd-79Fe-6B-1Co組成(at%)の縦30mm×横20mm×高さ3mm寸法の平板状焼結磁石(以下、磁石体試験片と称する)の表面に各種のアルカリ珪酸塩被膜を以下のようにして形成した。\n\n【0019】\n\n1.処理液の調製とその保存安定性\n\nアルカリ珪酸塩として珪酸リチウム(Li2O·nSiO2:n=4.5)と珪酸ナトリウム(Na2O·nSiO2:n=3)を合計10重量%含むアルカリ珪酸塩水溶液(珪酸リチウムと珪酸ナトリウムは重量比が4:1であり、ナトリウム含量は0.4重量%)に熱硬化性樹脂としてアクリル変性エポキシ樹脂とメラミン樹脂とからなるソープフリー水溶性エマルジョン樹脂(エポキシ当量300〜1500,固形分50重量%,粘度(30℃)300MPa·s〜400MPa·s:特開平6-136317号公報に基づいて調製)を添加し、スターラーにて混合攪拌することで表1に示す3種類の処理液を調製した(処理液3は樹脂無添加)。得られた処理液は、いずれもpHが11〜12であり、40℃にて1年間保存しても樹脂分散性は良好で優れた保存安定性を示した。\n\n【0020】\n\n【表1】\n\n\n\n【0021】\n\n2.アルカリ珪酸塩被膜の形成と被膜の詳細\n\nアセトンで超音波洗浄することにより表面に付着している磁性粉を除去した磁石体試験片を、調製してから3時間経過後の各処理液中に浸漬した。その後、磁石体試験片を処理液中から引き上げて200℃で20分間加熱乾燥して磁石体試験片の表面にアルカリ珪酸塩被膜を形成した。なお、被膜付着量はエアワイピングのワイピング圧を調整することにより調整した。以上の方法で形成された被膜の詳細について表2に示す。\n\n【0022】\n\n【表2】\n\n\n\n【0023】\n\n3.冷媒に対する効果(その1)\n\n1個のアルカリ珪酸塩被膜が表面に形成された磁石体試験片(以下、サンプルと称する)とサンプルが全没する容量のポリオールエステル系冷媒機油(エステル油)を容量100mLの圧力容器(ポータブルリアクターTVS-1型:耐圧硝子工業社製の商品名)に収容し、容器の蓋を締結した。容器内をロータリーポンプを使用して10分間真空引きした後、HFC系冷媒R410Aを140℃保持時に絶対圧力が5MPaとなるような封入量で封入した。なお、上記の冷凍機油は、その油中水分量が500ppmとなるようにカールフィッシャー水分計を用いて調整したものを使用した。\n\n恒温装置に圧力容器を収容し、140℃にて1000時間保持した後、圧力容器からサンプルを取り出した。このようにして得られたサンプル10個についてJISH8504に記載の引き剥がし試験方法に準じてセロテープ(登録商標:ニチバン社製)を使用した引き剥がし試験を行い、被膜の劣化の有無を被膜の剥離の有無によって評価した。結果を表2に示す。表2から明らかなように、サンプル3については10個とも被膜の劣化によるクラックが多数発生し、磁石表面と被膜との密着性が失われたことに起因する被膜の一部剥離が見られた。しかしながら、サンプル1,2については10個とも被膜にクラックは発生せず、被膜の剥離は見られなかった。また、サンプル1,2については、上記の試験前後における磁束変化は0.5%未満と少ないものであった。\n\n【0024】\n\n4.冷媒に対する効果(その2)\n\n1個のサンプル2とサンプル2が全没する容量のポリオールエステル系冷媒機油(エステル油)を容量100mLの圧力容器(ポータブルリアクターTVS-1型:耐圧硝子工業社製の商品名)に収容し、容器の蓋を締結した。容器内をロータリーポンプを使用して10分間真空引きした後、HFC系冷媒R410Aを110℃保持時に絶対圧力が1.3MPaとなるような封入量で封入した。なお、上記の冷凍機油は、その油中水分量が2000ppmとなるようにカールフィッシャー水分計を用いて調整したものを使用した。\n\n恒温装置に圧力容器を収容し、110℃にて1000時間保持した後、圧力容器からサンプルを取り出した。このようにして得られたサンプル10個についてJISH8504に記載の引き剥がし試験方法に準じてセロテープ(登録商標:ニチバン社製)を使用した引き剥がし試験を行い、被膜の劣化の有無を被膜の剥離の有無によって評価したところ、10個とも被膜にクラックは発生せず、被膜の剥離は見られなかった。また、上記の試験前後における磁束変化は0.5%未満と少ないものであった。\n\n【0025】\n\n5.潤滑油に対する効果\n\nサンプル1,3について、次の実験を行った。市販のオートマチックトランスミッションフリュード(ATF)オイル(Castrol社製)にサンプルを浸漬し、150℃に加熱して150時間保持した後に50℃に急冷して50時間保持するというサイクルを6回行った後、ATFオイル中からサンプルを取り出した。無作為に抽出した10個の外観検査を行った。その結果、サンプル3については10個とも被膜の劣化によるクラックが多\n\n数発生した。しかしながら、サンプル1については10個とも被膜にクラックは発生しなかった。電子線マイクロアナライザー(EPMA:島津製作所社製)を使用して磁石体試験片の破断面観察を行ったところ、サンプル3については10個とも一部において炭素拡散が見られ、磁石体試験片の表面が潤滑油により腐食されていることが判明した。しかしながら、サンプル1については10個とも炭素拡散は見られず、潤滑油による磁石体試験片の表面の腐食はなかったことから、サンプル1の被膜は潤滑油による腐食作用を効果的に防止するものであった。また、サンプル1については、上記の試験前後における磁束変化は0.5%未満と少ないものであった。\n\n【0026】\n\n【発明の効果】\n\n本発明によれば、冷媒や潤滑油の存在下を使用環境とするアルカリ珪酸塩被膜を表面に有する希土類系永久磁石を当該環境で使用するに際し、当該被膜の劣化を防止して長期に渡って高い耐食性を発揮せしめる方法が提供される。', '【0001】\n\n技术领域\n\n本发明是一种稀土基永磁体,其在制冷剂或润滑油存在下使用制冷剂或润滑油的碱性硅酸盐涂层,例如掺入制冷剂或润滑油中,并在存在下使用制冷剂或润滑油。该方法涉及防止膜劣化的方法。\n\n【0002】\n\n发明背景\n\n由ND-Fe-B永磁体和稀土的永磁体表示的基于R-Fe-B的永磁体如SM-Fe-N永磁体代表的R-Fe-N永磁体是资源,因为丰富而廉价使用材料并具有高磁性,R-Fe-B永磁体特别用于当今各个领域。\n\n然而,由于基于稀土的永磁体包括高反应性稀土金属:R,易于在大气中腐蚀,并且当使用时没有任何表面处理,小酸,碱和水分等。腐蚀从表面进行了腐蚀,引起锈蚀,随之而来,它导致磁体特性的劣化和变化。此外,如果锈生成的磁铁被结合到诸如磁路的装置中,则锈蚀可以散射到污染的外围部件。\n\n因此,可以在稀土的永磁体的表面上形成碱性硅酸盐涂层作为耐腐蚀涂层。\n\n【0003】\n\n本发明要解决的问题\n\n顺便说一下,施加到压缩机的电动机构成冰箱或空调的制冷循环,例如冰箱或空调器是密封式压缩机中的密封压缩机中的制冷剂油),其严重和高于100的高温℃,作为润滑油通常混合,它是长时间使用的。因此,例如,在这种苛刻的环境中结合在这种恶劣环境中的稀土永磁体的表面上形成的耐腐蚀性膜在于它在很长一段时间内没有降解的情况下发挥高耐腐蚀性。是必要的。\n\n同样在应用于用于长时间暴露于润滑油的汽车零部件的电动机中,润滑油是由于100°C或更高的温度变化而根据汽车的操作环境而更高的操作环境。因此,例如,在这种电动机中结合在这种电动机中的稀土永磁体的表面上形成的耐腐蚀性膜也是必要的,以表现出高耐腐蚀性而不会随着时间的推移而劣化。\n\n【0004】\n\n碱性硅酸盐涂层是旧的耐腐蚀涂层之一,并且表现出足够的功能,作为在日常环境中使用的稀土永磁体的表面上形成的耐腐蚀涂层。然而,由于在稀土永磁体的表面上形成的耐腐蚀性涂层,其在制冷剂或润滑油的存在下使用,例如掺入电动机中以暴露于制冷剂或润滑油长时间的润滑油时间,它形成在稀土永磁体的表面上。该功能不足,并且在这种严重的使用环境中,涂层的劣化早期发生,以从磁体的表面上剥离涂层,并且不能发挥稳定的耐腐蚀性。\n\n因此,本发明具有碱性硅酸盐涂层,其在制冷剂或表面上的润滑油存在下使用。\n\n本发明的一个目的是提供一种防止薄膜劣化并在环境中使用稀土永磁体在长时间内表现出高耐腐蚀性的方法。\n\n【0005】\n\n[解决问题的手段]\n\n作为各种研究的看法,碱性硅酸盐和热固性树脂作为各种研究组合了热固性树脂。已经发现即使在形成均匀时,也可以有效地防止涂层的劣化三维网络结构并在制冷剂或润滑油的存在下使用。此外,在美国专利No.4,522,587中,在美国专利No.6,174,609中,具有具有3%至10重量%的碱硅酸盐的热固性树脂和90%至97重量%的涂层的稀土永磁体是组分。尽管公开了出版物未描述并建议本发明人这样的结果。\n\n【0006】\n\n本发明已经基于上述结果进行,并且预防本发明的碱硅酸盐涂层的降解的方法如权利要求1所述,所述温度范围为-30℃,在绝对压力范围内0.1MPa至5MPa。在薄膜中,当使用具有碱性硅酸盐涂层的稀土永磁体,在制冷剂存在于为-200℃的表面上使用碱性硅酸盐涂层(润滑油可以混合为a冰箱油)用于环境中,在、将处理溶液分散为无皂水溶性乳液树脂它已经是热固性树脂、其特征在于它以0.1%至50重量%的含量均匀分散。\n\n另外,本发明的碱硅酸盐涂层的劣化预防方法如权利要求2所述,并且在润滑油存在下,温度范围内的温度变化为至少100℃或更大 - 在使用稀土永磁体的涂层中使用碱性硅酸盐涂层的涂层中的环境,在环境中使用环境30°C至200℃。、将处理溶液分散为无皂水溶性乳液树脂它已经是热固性树脂、其特征在于它以0.1%至50重量%的含量均匀分散。\n\n4.根据权利要求3的方法的特征在于,在根据权利要求1或2的方法中,碱性硅酸盐涂层的特征在于硅酸锂是组分。\n\n5.根据权利要求4所述的方法的特征在于,在根据权利要求3所述的方法中,碱性硅酸盐涂层还包含硅酸钠作为组分。\n\n6.根据权利要求5所述的方法的特征在于,在根据权利要求4所述的方法中,膜中的钠含量为10重量%或更少。\n\n7.根据权利要求6所述的方法,其特征在于,所述热固性树脂是根据权利要求1至5中任一项的方法中的丙烯酸改性的环氧树脂。\n\n8.根据权利要求7的方法是根据权利要求1至6中任一项所述的方法,其中每个磁体表面区域的涂层粘附量为0.01g / m。2〜5克/米2它的特征在于它是。\n\n根据权利要求8的方法的特征在于,在根据权利要求1至7中任一项的方法中,它是含有水分和/或润滑油的制冷剂。\n\n10.根据权利要求9所述的方法的特征在于,所述制冷剂是根据权利要求1所述的方法是基于HFC的制冷剂。\n\n【0007】\n\n发明内容\n\n本发明的碱硅酸盐涂层的劣化防止方法的特征在于,热固性树脂均匀地分散在碱硅酸盐涂层中,并且根据这种构造,例如,即使a,也可以长时间地暴露于制冷剂和润滑油。具有薄膜的稀土基永磁体在薄膜的表面上提供,薄膜在随时间随时间而没有降解的耐腐蚀性。\n\n【0008】\n\n硅酸锂适合用作碱硅酸盐涂层。含硅酸锂作为组分的涂料是通式:李2o·nsio.2它由由表示的硅酸锂水溶液形成,并且特性基本上具有优异的耐腐蚀性。一般的\n\n在式n中是摩尔比(SIO2/李2这通常意味着通常使用1.5至10的范围内。\n\n【0009】\n\n在碱硅酸盐膜中,只有硅酸锂可以是组分,但除硅酸锂外,硅酸钠(水玻璃),硅酸钠,硅酸钠,硅酸钠等用作组分。它也很好。其中,通过将硅酸钠设置为薄膜的组分,可以在薄膜形成时确保良好的膜形成性能和磁体之间的强粘合。另外,如果硅酸钠是涂层的组分,即使在薄膜中存在创伤或裂缝,硅酸钠也会略微溶解在水中,渗透到部分,并展示自修复耐腐蚀性。当硅酸钠是涂层的组分时,希望将涂层中的含量以10重量%或更少作为钠含量制备,更优选为5重量%或更少。当超过10重量%时,可能对待形成的膜的耐水性产生不利影响,这可能导致膜的劣化。\n\n【0010】\n\n将待均匀分散在碱硅酸盐涂层中的热固性树脂的实例包括聚酯树脂,丙烯酸树脂,环氧树脂,聚氨酯树脂,改性树脂(后面描述的丙烯酸改性环氧树脂等)等。热固性树脂以0.1%至50重量%的含量均匀地均匀地分散在涂层中。如果小于0.1重量%,则可能不充分证明均匀分散热固性树脂的效果。另一方面,如果超过50重量%,则涂层的耐油性和防潮性,薄膜与磁体的表面之间的粘合可以不如涂层的表面而差不等磁体的表面,特别是如果存在快速温度变化,这是因为薄膜的劣化可能早期发生,并且膜可以从磁体的表面上剥离。将待均匀分散在薄膜中的热固性树脂的含量理想地是1%至30重量%,更优选为5%至20重量%。\n\n【0011】\n\n作为将热固性树脂均匀地分散在碱硅酸盐涂层中的方法,例如,制备热固性树脂均匀地分散在碱性硅酸盐溶液中的加工溶液,并将该处理溶液喷在磁体的表面上。如果将磁铁浸入处理液体和浸涂并浸渍,加热和干燥1分钟至120分钟,在60℃至300℃的温度条件下,碱硅酸盐和热固性树脂是形成a的方法提及成膜组分。为了将热固性树脂均匀地分散在碱硅酸盐涂层中,重要的是将热固性树脂均匀地分散在处理液中。此外,如果考虑到批量生产,则待准备的加工解决方案是液体寿命(盆栽)较长且更长的理想选择。鉴于上述点,分散在碱硅酸盐溶液中的热固性树脂优选是没有乳化剂(表面活性剂)的皂水溶性乳液树脂。由于碱硅酸盐溶液表现出碱性(pH10至pH13:这种pH不会引起磁体腐蚀的问题),因此,热固性树脂也是期望的),并且热固性树脂乳化(特别是当活性剂分散时的非离子界面添加水溶性乳液树脂,由于可热固化树脂均匀分散,因为在液体中发生乳液分解,并且通常引起树脂的凝胶化。它变得困难,结果是因为有可能的是热固性的可能性树脂不能均匀地分散在碱硅酸盐涂层中。此外,这种加工液是由于上述现象引起的上述现象的自然。\n\n【0012】\n\n通过将丙烯酸修饰的环氧树脂作为热固性树脂分散作为皂的游离水溶性乳液树脂制备的处理液,并通过将丙烯酸改性的环氧树脂分散在处理液中来制备。因此,当使用该处理液时,丙烯酸改性的环氧树脂均匀地分散在碱硅酸盐涂层中,并且表现出优异的涂层劣化效果。丙烯酸修饰的环氧树脂是指通过使双酚型环氧树脂和含羧基的丙烯酸树脂反应获得的树脂(如果需要,请参见JP-A-6-136317)。双酚型环氧树脂\n\nPhysalll包括双酚A环氧树脂,双酚F型环氧树脂,脱胶环氧树脂,环氧树脂,丙烯酸,甲基丙烯酸,多元羧酸,这些酸酐,脂肪酸,聚醚多元醇,聚酯的改性环氧树脂具有多元醇,a聚酰胺胺等反应等等。含羧基的丙烯酸树脂是具有丙烯酸,甲基丙烯酸,螯合酸,衣康酸,马来酸,富马酸等的丙烯酸共聚物是具有必需单体组分的丙烯酸共聚物。除了含羧基的丙烯酸树脂的聚合之外,除了可聚合不饱和羧酸之外的其他单体组分,例如苯乙烯单体如苯乙烯,2-甲基苯乙烯,丙烯酸甲酯,丙烯酸乙酯,丙烯酸酯异丙基。,丙烯酸正丁酯,丙烯酸酯单体如丙烯酸酯,甲基丙烯酸甲酯,甲基丙烯酸甲酯,甲基丙烯酸,甲基丙烯酸正叔丁酯,甲基丙烯酸正丁酯,甲基丙烯酸酯单体如甲基丙烯酸己酸酯等。或2种以上。热固性树脂可根据需要含有交联固化剂,例如三聚氰胺树脂或酚醛树脂。在本发明中,适当使用包含丙烯酸改性的环氧树脂和三聚氰胺树脂的皂化的水溶性乳液树脂。\n\n【0013】\n\n例如,作为在碱硅酸盐涂层中均匀分散在0.1%至50重量%的含量为0.1%至50重量%的合适的处理溶液中,热固性树脂为0.1重量%,为肥皂水溶性乳液树脂。6%重量,优选0.5重量%至3重量%,包括含有2%至30重量%的碱硅酸盐的处理溶液,并在该组合物范围内均匀地分散在碱硅酸盐涂层中的热固化。它是理想的适当地调整所需的量。另外,当处理液中进一步含有硅酸钠作为碱性硅酸盐时,所以希望处理液中的钠含量为1重量%或更少。\n\n【0014】\n\n具有均匀分散的热固性树脂的碱性硅酸盐涂层是0.01g涂覆磁体单元表面积。2如上所述,希望形成为约15nm或更大的形式。 0.01克/米2如果它较小,则可能无法充分表现出耐腐蚀膜的功能。尽管涂层粘合量的上限没有特别限制,但是难以将均匀的粘附性固定到磁体的整个表面上,并且与包含粘合剂的有机树脂的粘附可能对性别产生不利影响。因此,从上述观点来看,涂层粘合量的上限为5克/米2是理想的。\n\n【0015】\n\n施加到本发明的稀土基永磁体的实例包括已知的稀土基永磁体,例如基于R-Fe-B基的永磁体和R-Fe-N永磁体。其中,如上所述,如上所述,如上所述,希望它具有优异的粘附性,并且具有优异的质量生产率和经济性。这些稀土永磁体中的稀土元素(R)是Nd,Pr,Dy,Dy,Ho,Tb,Sm和La,Ce,Gd,ER,欧盟,Tm,Yb,Lu中的至少一种,是理想的包括至少一个Y.\n\n另外,尽管它通常足够的RS,两个或更多个混合物(例如混合金属,Dijim等)可以用于实际使用,但为方便起见。\n\n此外,通过添加Al,Ti,V,Cr,Mn,Bi,Nb,Ta,Mo,W,Sb,Ge,Sn,Zr,Ni,Si,Zn,HF和Ga,也是可能的提高胁迫力的大规模和退磁曲线,提高可制造性,降低价格。此外,通过用CO替换FE的一部分,可以提高温度特性而不会影响所得磁体的磁性。\n\n注意,施加到本发明的稀土基永磁体可以是烧结磁体或粘合磁体。\n\n【0016】\n\n一种稀土基永磁体,其具有碱性硅酸盐涂层,其中热固性树脂均匀地分散在表面上,\n\n例如,尽管将涂层结合到施加到电动机或汽车部件的电动机中,其施加到构成冰箱或空调的制冷循环的压缩机上,但涂层是基于HFC的制冷剂(R410A,R407C,R134A,R125等),例如HCFC制冷剂(R22,R32等)在不进行的情况下表现出高耐腐蚀性。此外,当制冷剂或润滑油含有水时,水分可以直接促进磁体的腐蚀,但即使在这种情况下,也可以在碱硅酸盐涂层中均匀。通过分散,磁铁的腐蚀可以腐蚀有效预防。\n\n【0017】\n\n【例子】\n\n尽管将通过以下实施例更详细地描述本发明,但是本发明不限于此。\n\n【0018】\n\n示例a:\n\n例如,如美国专利No.4,770,723或美国专利No.4,792,368中所描述的,通过在细磨后形成,烧结,热处理和表面处理获得14个,14nd。-79Fe-6b -1 CO组合物(以%)垂直30mm×水平20mm×高度3mm尺寸型型烧结磁体(下文中称为磁体样品),其形成了各种碱性硅酸盐涂层。\n\n【0019】\n\n1.制备治疗溶液及其储存稳定性\n\n硅酸锂作为碱硅酸盐(李2o·nsio.2:n = 4.5)和硅酸钠(Na2o·nsio.2(n = 3)含有10重量%(硅酸锂和硅酸钠的碱硅酸盐的溶液为4:1重量比,钠含量为0.4重量%),为热固性树脂和三聚氰胺作为热固性树脂SORP-用树脂制成的游离水溶性乳液树脂(环氧当量300至1500,固体含量为50重量%,粘度(30°C)300 MPa·S至400MPa·S:JP-A-6-136317)和三个通过用搅拌器混合和搅拌制备表1中所示的处理溶液的类型(处理液3而无树脂)。所得的处理液具有11至12的pH为11至12,即使在40℃下储存一年,树脂分散性也表现出良好且优异的储存稳定性。\n\n【0020】\n\n【表格1】\n\n\n\n【0021】\n\n2.形成碱性硅酸盐涂层和薄膜细节\n\n通过在制备后3小时后将通过超声波清洗除去粘附到表面的磁粉而获得的磁性型试验片,在每种处理溶液中浸入每个处理溶液中。此后,将磁体试验片拉出处理液体并加热加热并在200℃下干燥20分钟以在磁体样本的表面上形成碱硅酸盐涂层。通过调节空气擦拭的擦拭压力来调节涂层粘合量。以上述方法形成的涂层的细节示于表2中。\n\n【0022】\n\n[表2]\n\n\n\n【0023】\n\n3.对制冷剂的影响(1)\n\n多元醇酯制冷剂油(酯油)用多元醇酯制冷剂油(酯油),其中磁铁型试验片形成在表面上(以下称为样品)和样品在表面上螺纹的样品(便携式电压)TVS-1类型:它已在商品名“交易到体外公司”中,并进入集装箱盖子。在使用旋转泵用旋转泵吸尘器10分钟后,将HFC基制冷剂R410a在140℃下以140℃封闭在冷冻量,使得绝对压力为5MPa。使用卷发型水分计调节上述冰箱油,使油的水含量为500ppm。\n\n将压力容纳在恒温装置中,并在140℃下保持1000小时,然后从压力容器中取出样品。对于以这种方式获得的10个样品,根据测试方法使用JISH 8504中描述的果皮试验方法,使用CEROTAPE(由Nichiban Co.,Ltd。制造)和存在或不存在的剥离测试剥离薄膜的劣化。通过存在或不存在评估。结果显示在表2中。从表2中明显看出,对于样品3产生由于薄膜的劣化而导致的大量裂缝,并且观察到由于磁体表面的损失和涂层引起的涂层的一些剥离。。然而,对于样品1和2,在膜中没有裂缝未发生裂缝,并且不会观察到涂层的剥离。此外,对于样品1和2,上述试验前后的磁通量变化小于0.5%。\n\n【0024】\n\n4.对制冷剂的影响(2)\n\n1样品2和样品2是所有竞争压力容器(酯油),容量为100毫升压力容器(便携式反应器TVS-1类型:由击穿电压玻璃行业制造的商品名),签署了集装箱盖。在使用旋转泵的容器中吸尘10分钟后,基于HFC的制冷剂R410a以封闭的量封闭,使得当发生1000℃时绝对压力为1.3MPa。上述冰箱油用于使用卷曲的Fischer水分表,使油的水含量为2000ppm。\n\n将压力容器容纳在恒温装置中并在110℃下保持1000小时,并从压力容器中取出样品。对于以这种方式获得的10个样品,根据测试方法使用JISH 8504中描述的果皮试验方法,使用CEROTAPE(由Nichiban Co.,Ltd。制造)和存在或不存在的剥离测试剥离薄膜的劣化。当通过存在或不存在评估时,在膜中没有发生裂缝,未观察到薄膜的剥离。此外,上述试验前后的磁通量变化小于0.5%。\n\n【0025】\n\n5.对润滑油的影响\n\n对样品1和3进行以下实验。将样品浸入市售的自动变速器(ATF)油(ATF)油(由Castrol制造)中,加热至150℃并在50℃下保持150小时,然后快速冷却至50°C的循环并持续50小时,采样从ATF油中取出。随机提取10个目视检查。结果,由于涂层与十个样品3的劣化,存在许多裂缝\n\n该数字是生成的。然而,对于样品1,薄膜中没有发生裂缝。通过使用磁体样本的断裂表面进行电子束微量分析仪(EPMA:由Shimadzu Corporation制造),并且部分碳扩散部分有10个样品3,并且已经发现表面腐蚀的磁体样本润滑油。然而,由于除样品1中没有观察到碳扩散,因此没有观察到碳扩散,并且磁体试验片的表面没有腐蚀,因此样品1的膜有效地防止润滑油腐蚀作用。满足。此外,对于样品1,上述试验前后的磁通量变化小于0.5%。\n\n【0026】\n\n【发明效果】\n\n根据本发明,当使用具有制冷剂或润滑油的碱基硅酸盐涂层的稀土基永磁体时,在环境中使用具有表面上的表面的稀土基永磁体,劣化预防薄膜并随着时间的推移。提供了一种用于施加高耐腐蚀性的方法。');
INSERT INTO `os_patent_instruction_text` VALUES (12948, 22777, '【0001】\n\n【発明の属する技術分野】\n\n本発明は希土類磁石の皮膜形成方法に係わるもので、従来に比べ安価でかつ耐蝕性の良好な希土類磁石を得るものに係わる。\n\n【0002】\n\n【従来の技術】\n\n皮膜形成方法については、従来Ni等のメッキや下記のような樹脂による皮膜形成方法が用いられてきた。▲1▼電着塗装方法:電荷を持つ樹脂粉体が懸濁された液体に部品を浸漬し、外部電源により部品に電圧を印加することにより、電荷を持った樹脂粉体が部品にひきつけられ、部品を樹脂粉体で覆い、その後、樹脂粉体で覆われた部品を加熱し、樹脂粉体を溶融または/および架橋して部品の表面に皮膜を形成するもの。▲2▼静電塗装方法:電荷を持つ樹脂粉体を飛散させた空間に、電圧が印加された部品を置くことにより、樹脂粉体を部品に引き付けて部品に樹脂粉体皮膜を形成し、その後、樹脂粉体皮膜が形成された部品を加熱し、樹脂粉体を溶融または/および架橋して部品の表面に皮膜を形成するもの。▲3▼スプレー塗装方法:樹脂を溶媒で希釈し、これをスプレーで部品に吹き付けることにより皮膜を形成した後、溶媒を蒸発させ、樹脂を溶融または/および架橋して部品に皮膜を形成するもの。▲4▼浸漬塗装方法:粘度の低い樹脂液あるいは粘度の高い樹脂の場合は溶媒で希釈して粘度を下げた樹脂液の槽内に部品を浸漬して、部品の表面に樹脂を付着させ、その後、樹脂を溶融または/および架橋して皮膜を形成するもの。\n\n【0003】\n\nしかしながら、上述したような従来の皮膜形成方法は、以下に記載するような課題を有する。まず電着塗装方法においては部品を電極につけるための作業が必要であり、また電極を取り付けた部分には膜が形成されないので、皮膜形成後、その部分に樹脂を盛り付けるためのタッチアップと呼ばれる作業が必要となる。これらの作業は、人手または複雑な動きをするロボット等の導入が必要であり、従って、皮膜形成のための費用の増大を来すことになる。さらに、使用済みの電着液は産業廃棄物として処理しなくてはならない等の問題がある。静電塗装方法においても前記電着塗装方法と同じく部品を取り付ける問題があり、また粉体が飛散するため粉塵爆発等の危険性があり粉塵飛散防止や爆発防止のために大掛かりな装置が必要となる。また、スプレー塗装方法では皮膜の膜厚がスプレーガンの操作に大きく依存するので、膜厚が不均一になりやすい。部品のひとつの面にスプレーした後、他の面にスプレーするために部品をひっくり返す操作が必要である。スプレー化するために樹脂を多量の溶媒で希釈しなければならず、また塗布後、この溶媒を蒸発させる工程で公害対策処理が必要となる。また、浸漬塗装方法では、浸漬浴槽から部品を取り出し際の液だれ、液だまりが不可避的に発生し、また逆に液が付着しないか極端に薄いところができやすく、皮膜形成方法としては他の方法に比べ信頼性が低い。\n\n【0004】\n\nこれらの従来の塗膜形成方法のもつ問題点を対策する一方法として、例えば特開平6-154698号公報に開示されている様に、皮膜形成物質と下地との結合剤を混合した材料を、バレルなどの混合方法を用いて、下地表面に塗布する方法が開示されている。しかし、この方法では、下地表面にこの混合物が均一な膜厚で付着せず、また皮膜と下地を結合させるために下地を加熱すると、結合剤のみが融解または蒸発するが、皮膜形成物質は十分に融解して一様な皮膜とならず、粒子の積層凝集しただけの構造をもつ皮膜となる。この結果、この方法で形成された皮膜は、粒界が皮膜内に存在するために、外部からの水分などを十分に遮断することができず、磁石の耐食性を確保することができない。この様な粒界の発生量を低減させるための技術として、皮膜形成のための金属粒子の代わりに燐片状のアルミニウム金属箔をカプリング剤に混合した溶液に磁石を浸漬し、皮膜となる成分を磁石表面に形成する方法が特開平10-226890号公報に開示されている。しかし、この方法では皮膜成分が付着した磁石を、乾燥工程の後、バレルタンクに入れ、ステンレス球で磁石表面に衝撃をあたえることにより、皮膜成分の密着力を高め、さらにカプリ\n\nング剤の除去と言う工程を経るため、工程が長く複雑となり、膜厚にばらつきが発生しやすく、特に磁石角部と平面部の間の膜厚差が大きく、磁石の各場所で均一に耐食性を高めることが難しい問題がある。\n\n【0005】\n\n【発明が解決しようとする課題】\n\nよって本発明は、前述した従来の技術に内在している前記欠点に鑑み、これを解決するべく提案されたものであって、簡単な工程により低コストで必要十分な密着性を有する希土類磁石用の耐食性皮膜を形成する方法を提供することを目的とする。\n\n【0006】\n\n【課題を解決するための手段】\n\n本発明は、サンドブラストないしはショットピーニング等においてショット粒径を小さくして行くと、噴射速度が増大すると共に、被加工物たる永久磁石の噴射面に発熱が生じ、噴射表面温度が噴射速度の増加に伴って上昇することを利用したものであり、この際に永久磁石の表面に磁石硬度より低い硬度を有する直径20〜200μの金属または酸化物粒子を皮膜形成材料として用い、そのショットを噴射速度50m/sec以上で噴射し、希土類磁石の表面付近の温度を変態点以上に上昇させることを特徴とする。固体粒子などの繰り返し衝突により材料表面が機械的に損傷を受け、その一部が脱離していく現象はエロージョンと呼ばれているが、微小な単体金属、または合金などの球状物体からなるショットをエアや不活性ガスを用いた気流式の吹き付け加工機により相対的に非常に大きな永久磁石の平らな部分に衝突させると、衝突した粒子は磁石表面で跳ね返るが、衝突後は速度が遅くなる。衝突前後の粒子の運動エネルギーの差は熱エネルギーとなり、これにより粒子が高温に加熱され溶融する。そしてこの溶融した粒子が永久磁石の表面に膜状の堆積層を形成することを確認した。これは、固体粒子衝突がエロージョンを初期には一部引き起こすものの、吹き付け条件により、その後に成膜工程、すなわちショットコーテイングを生じることによる。被衝突物である希土類永久磁石の各面に均等に粒子を噴射することで希土類永久磁石の表面全体に一様な皮膜を形成させることができる。\n\n【0007】\n\nつまり、本発明は、希土類磁石の皮膜形成方法において、希土類磁石の硬度より低い硬度を有し、所定の組成からなる金属であって、直径が0.02mmから0.6mmまでの範囲である粒子を、空気または高圧不活性ガスまたは空気と高圧不活性ガスの混合物を用いて吹付けることによって、50〜2000m/sの範囲の速度で希土類磁石の表面に衝突させ、前記希土類磁石と粒子の衝突時のエネルギーにより粒子自身が融解して前記希土類磁石の表面に付着して皮膜を形成することを特徴とするものである。さらには、希土類磁石の皮膜形成方法において、Al2O3、Zr、Cr、Niのいずれかであって、直径が0.02mmから0.6mmまでの範囲である第1の粒子を、空気または高圧不活性ガスまたは空気と高圧不活性ガスの混合物を用いて吹付けることによって、50〜2000m/sの範囲の速度で希土類磁石の表面に衝突させて希土類磁石表面を清浄化すると共に希土類磁石表面に下地膜を形成し、その後希土類磁石の硬度より低い硬度を有し、前記第1の粒子とは異なる組成からなる金属であって、直径が0.02mmから0.6mmまでの範囲である第2の粒子を、空気または高圧不活性ガスまたは空気と高圧不活性ガスの混合物を用いて吹付けることによって、50〜2000m/sの範囲の速度で希土類磁石の表面に衝突させ、前記希土類磁石と粒子の衝突時のエネルギーにより粒子自身が融解して前記下地膜上に当該下地膜とは異なる組成の皮膜を形成し、複数の組成で積層された多層膜を形成することができる。多層構造であればこの下地膜の厚さは10μm以下であっても十分な耐蝕性を確保できる。\n\n【0008】\n\n本発明の希土類磁石とはR-T(-M)-B(-C)系、Sm-Co系、R-T(-M)-N(-B)系等を主に指すがそれ以外のものであっても効果は本発明と同様のものが得られるのは当然である。ここでRとはYを含む希土類元素のうちの1種または2種以上、Tは遷移金属、MはTi、V、Cr、W、Mn、Ga、Al、Sn、Ta、Nb、Siの\n\n1種以上を指すものである。\n\n【0009】\n\n【発明の実施の形態】\n\n(実施例1)\n\n本発明の実施したときの詳細を次に述べる。まず固定ガン方式のショットブラスト機を用い、ノズルの先端から元圧0.2〜1.0MPaの空気を高速で噴出させた。そのとき、粒子径10〜600μの、Al2O3,Zr,Ni,Cu,Sn、Zn,Crの各単体金属粒子を個別にこの空気流にのせて、100〜200m/秒で被処理物である永久磁石に吹き付けた。もちろん、吹き付けられる粒子の速度は高速であるほど、粒子の運動エネルギーは高まり、皮膜の形成は容易となる。しかし、あまりに粒子の速度が速いと、粒子の衝突時に磁石表面の温度が高温になりすぎ、磁石表面の組織を変質させてしまう可能性がある。従って、最適な粒子の速度は、50m/秒〜2000m/秒の範囲にあることが望ましい。この粒子速度の範囲では、磁石表面の温度上昇は500〜900℃の範囲に抑えられるため、磁石表面は1〜10μmの範囲の深さで高温になるが、それより深層部では温度上昇は進まないため、磁石の磁気特性を低下させるようことは無い。ここで用いた永久磁石はNdFeB系をベースとし、それに磁気特性を確保するために微量の添加元素(Co,Dy,Tb,Al,Nb,Cu,Cr,Eu)を必要に応じて加えたことによる試料を用いた。磁石の形状として、15x45x3mmのブロック磁石、外径30x内径10x厚2mmの薄肉形リング磁石、30x50x10mmの大型ブロック磁石、35x40x8mm、内R150mm、外R158mmのアークセグメント磁石を用いた。\n\n【0010】\n\n吹き付け角度は、試料の面に噴射流が垂直にあたるようにし、ノズル先端から試料表面までの距離は100〜200mmであった。ショットに使用したノズルの直径は2mmであり、材質は超鋼材を用いた。ショットに要した時間は各面につき20秒であった。この条件のもとで、磁石上に形成された皮膜の膜厚を次の表1に示す。\n\n【0011】\n\n【表1】\n\n\n\n【0012】\n\n表1の結果が示す様に、磁石表面にはCu,Sn,Zn、Crでは実用的に十分な厚さの膜が形成されたが、他の元素では膜厚が薄く形成された。磁石表面に形成された皮膜の膜厚の分布は、今回実施した3種類の磁石の形状の違いによる影響はなかった。形成された皮膜の下地磁石との密着強度は、引張試験によると100〜250kg/cm2の範囲にあり、皮膜の密着強度としては実用的に十分な範囲であった。\n\n【0013】\n\n(実施例2)\n\n各磁石の表面をAl2O3にてあらかじめショットブラストをかけ、表面状態を一様にした後、Al2O3以外の金属を噴射し皮膜の形成を確認した。これは、Al2O3粒子を磁石に吹き付けた場合、皮膜はわずかの厚みにしか形成されず、むしろブラスト効果により、磁石表面が研磨され、Al2O3の吹き付け前に比べて均一な表面状態が得られることを確認できたためである。このような現象は、Al2O3のほかに、Zr,Cr、Niでもみられるため、これらの材質をあらかじめ永久磁石表面に吹き付けることにより、表面清浄の効果を得ることができる。また、これらの材質では非常に薄い膜が磁石表面に形成されることから、異種材質による多層膜の形成を行うことも可能である。本実施例の場合、Al2O3の噴射時間は、各磁石とも20秒であり、その他の金属の噴射時間もそれ\n\nぞれ20秒である。この結果、得られた皮膜の材質別膜厚を表2に示す。\n\n【0014】\n\n【表2】\n\n\n\n【0015】\n\n表2の結果が示す様に、Al2O3粒子をあらかじめ磁石表面に照射しても、その後につける金属膜の膜厚には大きな差は見られなかった。しかし、Al2O3の事前照射により、磁石表面の付着物がとれ、凹凸の変化も小さくなったため、金属膜をつけた際の膜厚のばらつきは、Al2O3を照射しない場合に比較し、8μm→3μmと低下した。形成された皮膜の膜厚分布は、実施例1の場合と同様に、磁石の形状による差異はなかった。皮膜の密着強度は100〜200kg/cm2の範囲にあり、実施例1の場合にくらべ改善されたことを確認した。\n\n【0016】\n\n(実施例3)\n\n固定ガン方式のショットブラスト機を用い、ノズルの先端から元圧0.2〜1.0MPaの空気を高速で噴出させた。第一の粒子として粒子径10〜600μmのNi合金を用いた。この金属粒子を前記ショットブラス機により100〜200m/sで被処理物である永久磁石に吹き付け、膜厚8μmのNi膜を得た。その後、第二の粒子として粒子径10〜600μmのCu合金を用いた。第一の粒子と同様に希土類磁石の表面に吹き付けることで膜厚12μmの膜を形成した。これにより希土類磁石の表面にNi-Cuからなる多層膜を形成した。\n\n【0017】\n\n【発明の効果】\n\n本発明は、上記の説明の内容からわかるとおり、ショットブラスト機のような低価格で簡便な構造の設備を用いるのみで、磁石表面に皮膜を形成させることができ、膜形成工程を短時間で完了させることができるため、従来の皮膜形成方法に比較して、大変に低コストで磁石表面に保護膜を形成させることができる。', '【0001】\n\n技术领域\n\n本発明は希土類磁石の皮膜形成方法に係わるもので、従来に比べ安価でかつ耐蝕性の良好な希土類磁石を得るものに係わる。\n\n【0002】\n\n发明背景\n\n皮膜形成方法については、従来Ni等のメッキや下記のような樹脂による皮膜形成方法が用いられてきた。▲1▼電着塗装方法:電荷を持つ樹脂粉体が懸濁された液体に部品を浸漬し、外部電源により部品に電圧を印加することにより、電荷を持った樹脂粉体が部品にひきつけられ、部品を樹脂粉体で覆い、その後、樹脂粉体で覆われた部品を加熱し、樹脂粉体を溶融または/および架橋して部品の表面に皮膜を形成するもの。▲2▼静電塗装方法:電荷を持つ樹脂粉体を飛散させた空間に、電圧が印加された部品を置くことにより、樹脂粉体を部品に引き付けて部品に樹脂粉体皮膜を形成し、その後、樹脂粉体皮膜が形成された部品を加熱し、樹脂粉体を溶融または/および架橋して部品の表面に皮膜を形成するもの。▲3▼スプレー塗装方法:樹脂を溶媒で希釈し、これをスプレーで部品に吹き付けることにより皮膜を形成した後、溶媒を蒸発させ、樹脂を溶融または/および架橋して部品に皮膜を形成するもの。▲4▼浸漬塗装方法:粘度の低い樹脂液あるいは粘度の高い樹脂の場合は溶媒で希釈して粘度を下げた樹脂液の槽内に部品を浸漬して、部品の表面に樹脂を付着させ、その後、樹脂を溶融または/および架橋して皮膜を形成するもの。\n\n【0003】\n\nしかしながら、上述したような従来の皮膜形成方法は、以下に記載するような課題を有する。まず電着塗装方法においては部品を電極につけるための作業が必要であり、また電極を取り付けた部分には膜が形成されないので、皮膜形成後、その部分に樹脂を盛り付けるためのタッチアップと呼ばれる作業が必要となる。これらの作業は、人手または複雑な動きをするロボット等の導入が必要であり、従って、皮膜形成のための費用の増大を来すことになる。さらに、使用済みの電着液は産業廃棄物として処理しなくてはならない等の問題がある。静电器装药方法においても前前电源着装配方法变得。また、スプレー塗装方法では皮膜の膜厚がスプレーガンの操作に大きく依存するので、膜厚が不均一になりやすい。部品のひとつの面にスプレーした後、他の面にスプレーするために部品をひっくり返す操作が必要である。スプレー化するために樹脂を多量の溶媒で希釈しなければならず、また塗布後、この溶媒を蒸発させる工程で公害対策処理が必要となる。また、浸漬塗装方法では、浸漬浴槽から部品を取り出し際の液だれ、液だまりが不可避的に発生し、また逆に液が付着しないか極端に薄いところができやすく、皮膜形成方法としては他の方法に比べ信頼性が低い。\n\n【0004】\n\nこれらの従来の塗膜形成方法のもつ問題点を対策する一方法として、例えば特開平6-154698号公報に開示されている様に、皮膜形成物質と下地との結合剤を混合した材料を、バレルなどの混合方法を用いて、下地表面に塗布する方法が開示されている。しかし、この方法では、下地表面にこの混合物が均一な膜厚で付着せず、また皮膜と下地を結合させるために下地を加熱すると、結合剤のみが融解または蒸発するが、皮膜形成物質は十分に融解して一様な皮膜とならず、粒子の積層凝集しただけの構造をもつ皮膜となる。この結果、この方法で形成された皮膜は、粒界が皮膜内に存在するために、外部からの水分などを十分に遮断することができず、磁石の耐食性を確保することができない。この様な粒界の発生量を低減させるための技術として、皮膜形成のための金属粒子の代わりに燐片状のアルミニウム金属箔をカプリング剤に混合した溶液に磁石を浸漬し、皮膜となる成分を磁石表面に形成する方法が特開平10-226890号公報に開示されている。しかし、この方法では皮膜成分が付着した磁石を、乾燥工程の後、バレルタンクに入れ、ステンレス球で磁石表面に衝撃をあたえることにより、皮膜成分の密着力を高め、さらにカプリ\n\nング剤の除去と言う工程を経るため、工程が長く複雑となり、膜厚にばらつきが発生しやすく、特に磁石角部と平面部の間の膜厚差が大きく、磁石の各場所で均一に耐食性を高めることが難しい問題がある。\n\n【0005】\n\n本发明要解决的问题\n\nよって本発明は、前述した従来の技術に内在している前記欠点に鑑み、これを解決するべく提案されたものであって、簡単な工程により低コストで必要十分な密着性を有する希土類磁石用の耐食性皮膜を形成する方法を提供することを目的とする。\n\n【0006】\n\n[解决问题的手段]\n\n本発明は、サンドブラストないしはショットピーニング等においてショット粒径を小さくして行くと、噴射速度が増大すると共に、被加工物たる永久磁石の噴射面に発熱が生じ、噴射表面温度が噴射速度の増加に伴って上昇することを利用したものであり、この際に永久磁石の表面に磁石硬度より低い硬度を有する直径20〜200μの金属または酸化物粒子を皮膜形成材料として用い、そのショットを噴射速度50m/sec以上で噴射し、希土類磁石の表面付近の温度を変態点以上に上昇させることを特徴とする。固体粒子などの繰り返し衝突により材料表面が機械的に損傷を受け、その一部が脱離していく現象はエロージョンと呼ばれているが、微小な単体金属、または合金などの球状物体からなるショットをエアや不活性ガスを用いた気流式の吹き付け加工機により相対的に非常に大きな永久磁石の平らな部分に衝突させると、衝突した粒子は磁石表面で跳ね返るが、衝突後は速度が遅くなる。衝突前後の粒子の運動エネルギーの差は熱エネルギーとなり、これにより粒子が高温に加熱され溶融する。そしてこの溶融した粒子が永久磁石の表面に膜状の堆積層を形成することを確認した。これは、固体粒子衝突がエロージョンを初期には一部引き起こすものの、吹き付け条件により、その後に成膜工程、すなわちショットコーテイングを生じることによる。被衝突物である希土類永久磁石の各面に均等に粒子を噴射することで希土類永久磁石の表面全体に一様な皮膜を形成させることができる。\n\n【0007】\n\nつまり、本発明は、在稀土磁铁的膜形成方法中,低于稀土磁体的硬度的硬度由预定的组合物制成金属であって、直径が0.02mmから0.6mmまでの範囲である粒子を、空気または高圧不活性ガスまたは空気と高圧不活性ガスの混合物を用いて吹付けることによって、50〜2000m/sの範囲の速度で希土類磁石の表面に衝突させ、前記希土類磁石と粒子の衝突時のエネルギーにより粒子自身が融解して前記希土類磁石の表面に付着して皮膜を形成することを特徴とするものである。而且,在形成稀土磁铁的方法中,Al2O3,zr,cr,ni也是如此であって、直径が0.02mmから0.6mmまでの範囲である第1の粒子を、空気または高圧不活性ガスまたは空気と高圧不活性ガスの混合物を用いて吹付けることによって、50〜2000m/sの範囲の速度で希土類磁石の表面に衝突させて希土類磁石表面を清浄化すると共に希土類磁石表面に下地膜を形成し、その後它的硬度低于稀土磁铁的硬度,并且由与第一颗粒不同的组成组成金属であって、直径が0.02mmから0.6mmまでの範囲である第2の粒子を、空気または高圧不活性ガスまたは空気と高圧不活性ガスの混合物を用いて吹付けることによって、50〜2000m/sの範囲の速度で希土類磁石の表面に衝突させ、前記希土類磁石と粒子の衝突時のエネルギーにより粒子自身が融解して前記下地膜上に当該下地膜とは異なる組成の皮膜を形成し、複数の組成で積層された多層膜を形成することができる。多層構造であればこの下地膜の厚さは10μm以下であっても十分な耐蝕性を確保できる。\n\n【0008】\n\n本発明の希土類磁石とはR-T(-M)-B(-C)系、Sm-Co系、R-T(-M)-N(-B)系等を主に指すがそれ以外のものであっても効果は本発明と同様のものが得られるのは当然である。ここでRとはYを含む希土類元素のうちの1種または2種以上、Tは遷移金属、MはTi、V、Cr、W、Mn、Ga、Al、Sn、Ta、Nb、Siの\n\n1種以上を指すものである。\n\n【0009】\n\n发明内容\n\n(例1)\n\n本発明の実施したときの詳細を次に述べる。まず固定ガン方式のショットブラスト機を用い、ノズルの先端から元圧0.2〜1.0MPaの空気を高速で噴出させた。そのとき、粒子径10〜600μの、Al2O.3Zr,Ni,Cu,Sn,Sn,Zn和Cr的单个金属颗粒被单独喷洒到永磁体中,该活体是待处理在100至200米/秒的物体。当然,随着吹颗粒的速度高速,颗粒的动能增加,并且薄膜的形成变得容易。然而,当粒子速度太快时,在颗粒的碰撞时磁体表面的温度变得太高,并且磁体表面的组织可以降低。因此,希望最佳粒度在50m / s至2000m / s的范围内。在粒子速度范围内,磁体的表面的温度升高被抑制到500至900℃的范围内,因此磁体的表面在1至10μm的深度处变为高温,但温度升高在更深的部分中进展。没有这样的东西可以减少磁体的磁性。这里使用的永磁体基于NDFEB系统,加入少量添加剂元素(CO,Dy,Tb,Al,Nb,Cu,Cr,Eu),以确保必要的磁性。通过使用使用样品。作为磁铁的形状,块磁铁为15×45×3mm,外径30×内径10×厚度2 mm环磁体,大块块30×50×10mm,35×40×使用8mm,内部R150mm和外部R158mm的弧形段磁铁。\n\n【0010】\n\n喷射角垂直装配到样品的表面上,并且从喷嘴尖端到样品表面的距离为100至200mm。用于喷射的喷嘴的直径为2毫米和是的,材料使用超钢。每场镜头所花费的时间为20秒。在这种情况下,在磁体上形成的涂层的膜厚度示于下表1中。\n\n【0011】\n\n【表格1】\n\n\n\n【0012】\n\n由于表1的结果显示了在Cu,Sn,Zn和Cr中的Cu,Sn,Zn和Cr中具有大量足够厚度的薄膜,膜厚度与其他元件薄薄地形成。由于这次进行的三种类型的磁体的形状差异,在磁体的表面上形成的膜的膜厚度的分布没有效果。根据拉伸试验,用基础磁体的形成涂层的粘合强度为100至250kg / cm2它在薄膜的范围内,其实际上是薄膜的粘合强度就足够了。\n\n【0013】\n\n(例2)\n\n每个磁铁表面2O.3在拍摄后提前爆炸和均匀的表面状况,Al2O.3除了注射以外的金属以确认薄膜的形成。这是al2O.3当颗粒被吹入磁体时,薄膜仅形成为轻微的厚度,而是由于爆破效果,磁体表面被抛光,并且Al2O.3这是因为它证实可以在喷涂之前获得均匀的表面状况。这种现象是al2O.3此外,由于还可以看到Zr,Cr和Ni,因此可以通过预先将这些材料喷射到永磁表面中来获得表面清洁的影响。另外,由于具有这些材料的磁体表面上形成非常薄膜,因此也可以通过不同材料形成多层膜。在这个例子的情况下,al2O.3每个磁体的喷射时间为20秒,而其他金属的喷射时间也是如此\n\n这是20秒。结果,所得薄膜材料的膜厚度示于表2中。\n\n【0014】\n\n[表2]\n\n\n\n【0015】\n\n结果表2显示,al2O.3即使将颗粒预先照射到磁体表面,在随后附着的金属膜的膜厚度下也没有发现显着差异。但是2O.3通过预先照射磁体表面,取磁体表面的粘附性,并且不均匀的变化也降低,因此当附着金属膜时,膜厚度的变化是Al。2O.3与不照射照射的情况相比,它用8μm→3μm降低。由于在实施例1的情况下,由于磁体的形状,所形成膜的膜厚度分布没有差异。涂层的粘合强度为100至200kg / cm2它在范围内,确认在实施例1的情况下提高了这种情况。\n\n【0016】\n\n(例3)\n\n固定枪喷丸机用于将空气从喷嘴的尖端喷射到0.2至1.0MPa的速度。使用粒径为10至600μm的Ni合金作为第一颗粒。将该金属颗粒喷涂到永磁体,该永磁体是通过喷射黄铜机以100至200米/秒处理的过程物体。厚度获得8μMNI膜。此后,使用粒径为10至600μm的Cu合金作为第二颗粒。通过喷涂稀土磁铁表面以及第一颗粒的膜厚度12μm膜它是形成的。结果,在稀土磁体的表面上形成由Ni-Cu制成的多层膜。\n\n【0017】\n\n【发明效果】\n\n根据本发明,从上述描述的含量可以看出,通过使用诸如射击喷砂机的低价装置,才能在磁体的表面上形成涂层,并且可以形成薄膜在短时间内。由于可以完成,与传统的成膜方法相比,可以以非常低的成本以非常低的成本形成保护膜。');
INSERT INTO `os_patent_instruction_text` VALUES (12949, 22778, '【0001】\n\n【発明の属する技術分野】\n\n本発明は、R-Fe-B系希土類磁石および当該磁石用合金粉末、ならびにその製造方法に関する。ここで、Rは希土類元素、Feは鉄、Bはホウ素であり、本明細書における「希土類」とは、周期表3A族のうち、スカンジウム(Sc)およびイットリウム(Y)にランタノイドを加えた17元素の総称を言い、希土類元素Rは、この希土類に含まれる少なくとも1種の元素である。\n\n【0002】\n\n【従来の技術】\n\n希土類焼結磁石は、希土類磁石用合金(原料合金)を粉砕して形成した合金粉末をプレス成形した後、焼結工程および時効熱処理工程を経て作製される。現在、希土類焼結磁石としては、サマリウム·コバルト系磁石と希土類·鉄·ホウ素系磁石の二種類が各分野で広く用いられている。なかでも希土類·鉄·ホウ素系磁石(以下、「R-Fe-B系希土類磁石」と称する。)は、種々の永久磁石の中で最も高い磁気エネルギー積を示し、価格も比較的安いため、各種電子機器へ積極的に採用されている。R-Fe-B系希土類磁石は、R2Fe14B型結晶構造を有する化合物からなる主相と、この主相の粒界部分に位置する粒界相とを有している。なお、Feの一部は、Coなどの遷移金属元素と置換されていても良いし、Bの一部はC(炭素)によって置換されていも良い。簡単化のため、このような元素置換が部分的に行われた磁石も、本明細書では「R-Fe-B系希土類磁石」と称することにする。\n\n【0003】\n\nR-Fe-B系希土類磁石用の原料合金粉末は、原料合金の粗粉砕を行う第1粉砕工程と、原料合金の微粉砕を行う第2粉砕工程とを含む方法によって作製されることがある。その場合、第1粉砕工程では、水素吸蔵現象を利用し、原料合金を脆化させ、例えば数百μm以下のサイズに粗く粉砕した後、第2粉砕工程では、粗粉砕された合金(粗粉砕粉)をジェットミル装置などによって平均粒径が数μm程度のサイズに細かく粉砕する。このような粉砕方法は、特許文献1に開示されている。\n\n【0004】\n\n原料合金自体の作製方法には大きく分けて2種類ある。第1の方法は、原料合金の溶湯を鋳型に入れ、比較的ゆっくりと冷却するインゴット鋳造法である。第2の方法は、合金の溶湯を単ロール、双ロール、回転ディスク、または回転円筒鋳型などに接触させることにより急速に冷却し、合金溶湯からインゴット合金よりも薄い凝固合金を作製するストリップキャスト法や遠心鋳造法に代表される急冷法である。ストリップキャスト法は、例えば特許文献2に記載されている。\n\n【0005】\n\nこのような急冷法による場合、合金溶湯の平均冷却速度は102℃/秒以上2×104℃/秒以下の範囲にある。従って、本明細書では、合金溶湯を102℃/秒以上2×104℃/秒以下の平均冷却速度で急冷して作製した合金を「急冷合金」と称することとする。ストリップキャスト法などの急冷法によって作製される急冷合金の厚さは、0.03mm以上10mm以下の範囲にある。合金溶湯は冷却ロールの接触した面(ロール接触面)から凝固し、ロール接触面から厚さ方向に結晶が柱状に成長してゆく。その結果、上記急冷合金は、短軸方向サイズが0.1μm以上100μm以下で長軸方向サイズが5μm以上500μm以下のR2Fe14B型結晶構造を有する結晶相(以下、「R2Fe14B型結晶相」と略記する場合がある)と、R2Fe14B結晶相の粒界部分に分散して存在するRリッチ相(希土類元素Rの濃度が相対的に高い相)などを含有する微細結晶組織を有するようになる。Rリッチ相は希土類元素Rの濃度が比較的に高い非磁性相であり、その厚さ(任意断\n\n面における粒界相の幅に相当する)は10μm以下である。\n\n【0006】\n\n急冷合金は、従来のインゴット鋳造法(金型鋳造法)によって作製された合金(インゴット合金)に比較して、相対的に短時間で冷却されているため、組織が微細化され、結晶粒径が小さい。また、結晶粒が微細に分散して粒界の面積が広く、Rリッチ相は粒界内を薄く広がっているため、Rリッチ相の分散性にも優れる。\n\n【0007】\n\nこのような急冷合金を前述の方法で粉砕した後、粉末をプレス装置で圧縮成形し、粉末の成形体を作製する。この成形体を焼結することにより、R-Fe-B系希土類磁石を得ることができる。\n\n【0008】\n\nR-Fe-B系急冷合金の粉末成形体は、例えば1000〜1100℃の温度で焼結される。焼結過程は、粉末中に含まれる比較的融点の低いRリッチ相が液相に変化することで促進される。1000〜1100℃という高温領域で焼結が進行することによって焼結体が形成された後、引き続いて焼結体の冷却が行われる。このとき、焼結磁石の特性を高めるには、平均冷却速度を100℃/分以上に早めることによって、液相化していた粒界相を非晶質化することが行われている。焼結体温度を焼結温度から室温にまで低下させる際に、冷却速度を調節することや付加的な熱処理を行うことは、例えば、特許文献3〜13に記載されている。\n\n【0009】\n\nR-Fe-B系希土類焼結磁石の保磁力発現機構はニュークリエーション型であるため、粒界相の状態が保磁力に強く影響する。従来より、焼結直後の平均冷却速度が遅すぎると、粒界相が完全に結晶化してしまい、保磁力が低下することが知られている。すなわち、保磁力の高い焼結磁石を量産するためには、粒界相を完全に非晶質化する必要があり、焼結体を室温レベルにまで冷却する際の平均冷却速度を100℃/分以上にすることが行われている。\n\n【0010】\n\n特にCoを原料合金に添加した場合は、焼結後の平均冷却速度が遅いと、Nd(Fe1-xCox)2などの強磁性化合物(x=0.5〜0.7)が粒界相中に析出するため、保磁力が低下してしまうことがある。こうして生成された強磁性化合物は、900℃を超える高温熱処理を加えることによって非磁性化される場合があるが、このような高温熱処理を行えば、焼結体の粒成長が進行するため、結果的に保磁力が低下してしまうことになる。\n\n【0011】\n\n一方、従来より、磁石特性を改善する目的で、焼結体に対する400〜500℃程度の熱処理(時効処理)が行われている。焼結直後における焼結体の粒界には微細な凹凸が存在し、保磁力の向上を妨げているが、このような焼結体に対して400〜500℃程度の熱処理を行えば、粒界相と主相の界面がスムーズなものに変化するため、保磁力が向上する。\n\n【0012】\n\n【特許文献1】\n\n特公平6-6728号公報\n\n【特許文献2】\n\n米国特許第5,383,978号明細書\n\n【特許文献3】\n\n特開昭60-77961号公報\n\n【特許文献4】\n\n特開昭60-182107号公報\n\n【特許文献5】\n\n特開昭60-184626号公報\n\n【特許文献6】\n\n特開昭61-87825号公報\n\n【特許文献7】\n\n特開昭61-81605号公報\n\n【特許文献8】\n\n特開昭61-252604号公報\n\n【特許文献9】\n\n特開昭61-264133号公報\n\n【特許文献10】\n\n特開平1-232704号公報\n\n【特許文献11】\n\n特公平2-16368号公報\n\n【特許文献12】\n\n特許第2720040号明細書\n\n【特許文献13】\n\n特許第2948223号明細書\n\n【0013】\n\n【発明が解決しようとする課題】\n\nしかし、急冷合金から作製した粉末の成形体を焼結した場合は、400〜500℃程度の熱処理を付加的に行っても保磁力の改善効果は十分ではなく、更に高い保磁力を達成するためには、粒界相の詳細な分析と改質が求められている。\n\n【0014】\n\n本発明はかかる諸点に鑑みてなされたものであり、その主な目的は、遷移金属の強磁性化合物が析出しやすい急冷合金を用いながら保磁力の向上した希土類焼結磁石およびその製造方法を提供することにある。\n\n【0015】\n\n【課題を解決するための手段】\n\n本発明の希土類焼結磁石は、R2Fe14B型結晶構造を有する化合物(Rは希土類元素)からなる主相と、前記主相の粒界部分に位置する粒界相とを有する希土類焼結磁石であって、前記粒界相は、前記主相の表面を薄く覆う非晶質層部分と、前記非晶質層部分によって挟まれた領域に存在する非磁性結晶層部分とを含んでいる。\n\n【0016】\n\n好ましい実施形態では、任意断面において前記非磁性結晶層部分が前記粒界相中に占める面積の割合が20%以上である。\n\n【0017】\n\n好ましい実施形態において、前記主相の平均粒径は、1.5μm以上20μm以下である。\n\n【0018】\n\n好ましい実施形態において、前記非磁性結晶層部分は遷移金属元素を含んでいる。\n\n【0019】\n\n好ましい実施形態において、MnおよびSiの含有濃度が1質量%以下に調節されている。\n\n【0020】\n\n好ましい実施形態において、前記粒界相の平均厚さは、1nm以上100nm以下である。\n\n【0021】\n\n好ましい実施形態において、原料合金は急冷合金である。\n\n【0022】\n\n本発明による希土類焼結磁石の製造方法は、R2Fe14B型結晶構造を有する化合物(Rは希土類元素)からなる主相と、前記主相の粒界部分に位置する粒界相とを有する希土類焼結磁石の製造方法であって、R-Fe-B系急冷合金の粉末を用意する工程と、前記粉\n\n末を1000℃以上1100℃以下の温度T1で焼結することによって焼結体を形成する工程と、前記焼結体を温度T1から50℃/分以下の平均冷却速度で冷却することにより、前記焼結体の温度を400℃以上900℃以下の温度T2にまで低下させる工程と、前記焼結体に対する温度T2での熱処理を0.01時間以上100時間以下の間実行する工程とを含む。\n\n【0023】\n\n本発明による他の希土類焼結磁石の製造方法は、R2Fe14B型結晶構造を有する化合物(Rは希土類元素)からなる主相と、前記主相の粒界部分に位置する粒界相とを有する希土類焼結磁石の製造方法であって、R-Fe-B系急冷合金の粉末を用意する工程と、前記粉末を1000℃以上1100℃以下の温度T1で焼結することによって焼結体を形成する工程と、前記焼結体を温度T1から冷却することにより、前記焼結体の温度を400℃を下回る温度に低下させる工程と、前記焼結体を加熱することにより、400℃以上900℃以下の温度T2よりも高い温度T3まで前記焼結体の温度を上昇させる工程と、前記焼結体を温度T3から50℃/分以下の平均冷却速度で冷却することにより、前記焼結体の温度を温度T2にまで低下させる工程と、前記焼結体に対する温度T2での熱処理を0.01時間以上100時間以下の間実行する工程とを含む。\n\n【0024】\n\n本発明による更に他の希土類焼結磁石の製造方法は、R2Fe14B型結晶構造を有する化合物(Rは希土類元素)からなる主相と、前記主相の粒界部分に位置する粒界相とを有する希土類焼結磁石の製造方法であって、R2Fe14B型結晶構造を有する化合物からなる主相と、前記主相の粒界部分に位置する非晶質の粒界相とを有する焼結体を用意する工程と、前記焼結体を400℃以上900℃以下の温度T2よりも高い温度T3に加熱した後、50℃/分以下の平均冷却速度で冷却することにより、前記焼結体の温度を400℃以上900℃以下の温度T2にまで低下させ、その温度での熱処理を0.01時間以上100時間以下の間実行する工程とを含む。\n\n【0025】\n\n前記R-Fe-B系急冷合金の粉末を用意する工程は、原料合金の溶湯を102℃/秒以上2×104℃/秒以下の平均冷却速度で冷却することによって急冷合金を作製する工程と、前記急冷合金を粉砕する工程とを包含する。\n\n【0026】\n\n好ましい実施形態において、前記原料合金の溶湯は、ストリップキャスト法によって冷却される。\n\n【0027】\n\n好ましい実施形態において、前記急冷合金を粉砕する工程は、水素処理によって前記急冷合金を脆化する工程を含んでいる。\n\n【0028】\n\n【発明の実施の形態】\n\n本発明者は、急冷合金粉末の成形体を焼結した後に焼結体を冷却する過程を制御すること(制御冷却)によって、従来得られなかった新規な構造を有する粒界相を形成し、それによって保磁力の向上が可能になることを見出し、本発明を想到するに至った。\n\n【0029】\n\nまず、図1(a)から(c)を参照しながら、本発明の基本的な特徴を説明する。\n\n【0030】\n\n図1(a)は、従来の焼結工程における典型的な温度プロファイルを示している。図示する例では、焼結温度T1が1080℃であり、温度T1での保持時間が6時間である。温度T1における6時間の熱処理により、粉末成形体は焼結し、焼結体が形成される。この時点での焼結体温度はT1であり、粒界部分は液相状態にある。この後、急冷によって焼結体温度はT1から急速に低下させられる。このときの平均冷却速度は通常100℃/分以上、典型的には150℃/分程度に設定され、焼結体の粒界相は非晶質化する。図2(a)は、非晶質化した粒界相を有する従来の希土類焼結磁石の組織構造を模式的に示す断\n\n面図である。\n\n【0031】\n\n図1(b)は、本発明で採用する焼結および制御冷却の温度プロファイルの一例を示している。本発明では、1000℃以上1100℃以下の温度T1で所定時間の焼結を行った後、温度T1から50℃/分以下(好ましくは30℃/分以下)の平均冷却速度で徐冷し、焼結体の温度を400℃以上900℃以下の温度T2に低下させる。そして、その温度T2での熱処理を所定時間行った後、室温レベルにまで冷却する。温度T2で熱処理後の平均冷却速度は、100℃/分を超える速度で急速に行ってもよい。\n\n【0032】\n\n図1(b)に示す例では、温度T1は1080℃、温度T2は630℃であり、温度T1から温度T2への冷却に6時間かけている。このときの平均冷却速度は1.25℃/分である。また、温度T2での熱処理は12時間実行している。\n\n【0033】\n\n急冷合金粉末を焼結した後、このようにゆっくりと冷却することにより、焼結体の粒界部分は、図2(b)に示すような構造を有するものとなる。すなわち、R2Fe14B型結晶構造を有する化合物(Rは希土類元素)からなる主相の表面を薄く覆う非晶質層部分(厚さ:例えば0.1nm〜10nm)と、非晶質層部分によって挟まれた領域に存在する結晶層部分(厚さ:例えば1nm〜10nm)とを含む構造(層状構造)を有する粒界相が形成される。非晶質層部分は、希土類元素を相対的に多く含む領域であり、結晶層部分は遷移金属を含む非磁性領域である。上記の非晶質層部分および結晶層部分の厚さは、結晶粒界の三重点近傍を除いた領域における厚さであり、粒界相の平均厚さは、例えば1.2nm以上30nm以下となる。三重点近傍における厚さは、それぞれ、1000nmに達する場合があり、三重点を考量すると、粒界相全体の平均厚さは、1nm以上100nm以下となる。\n\n【0034】\n\n焼結後に急冷を行った場合は、図2(a)に示すように、粒界相が非晶質化するとともに、例えばNdCo2などの遷移金属の強磁性化合物または強磁性元素が析出する。特に、本発明のように粉末を急冷合金から作製した場合は、遷移金属の強磁性化合物が粒界相中に析出しやすい。ストリップキャスト法などによって作製される急冷合金では、原料合金の溶湯が凝固するまでの時間が短いため、溶湯中に含まれていた遷移金属の分布が完全な平衡状態に達する前に凝固が完了してしまう。その結果、遷移金属が粒界相中に多く存在し、強磁性の化合物を形成しやすくなる。\n\n【0035】\n\n一方、本発明によれば、急冷合金粉末を用いて焼結体を作製しているにもかかわらず、冷却過程の温度プロファイルを適切に制御することにより、粒界相中に存在する遷移金属を粒界相中央部に位置する非磁性化合物として濃縮することができ、その結果、磁石の保磁力を向上させることができる。特に、本発明では、粒界相の全てが結晶化しておらず、主相の表面を薄い非晶質層が覆っているため、逆磁区の発生が抑えられ、従来の粒界相を備えた焼結磁石よりも高い保磁力が発現すると考えられる。\n\n【0036】\n\nなお、温度T1から温度T2まで焼結体を単調に冷却する変わりに、温度T1での焼結と温度T2での熱処理の間に、図1(c)に示すような再過熱処理を行ってもよい。\n\n【0037】\n\n図1(c)は、本発明で採用する他の焼結工程の熱処理プロファイル例を示している。この例では、焼結後、いったん400℃を下回る低い温度(典型的には室温レベル)まで焼結体温度を低下させる。このときの平均冷却速度は従来のように100℃/分を超えてもよい。次に、温度T2を超える温度T3(800℃以上1000℃以下の範囲に設定される)まで焼結体を再加熱し、所定の時間保持した後、50℃/分以下の平均冷却速度で焼結体を冷却(制御冷却)し、焼結体温度をT2に低下させ、温度T2て所定時間保持する。図1(c)の例では、温度T3は750℃であり、温度T3での保持時間は8時間、温\n\n度T2は630℃であり、温度T2での保持時間は12時間である。\n\n【0038】\n\n図1(c)に示す温度プロファイルのうち、再過熱処理を行う前の焼結に関する部分は、図1(a)に示す温度プロファイルと同様であるため、焼結後、400℃を下回る低い温度(典型的には室温レベル)まで焼結体温度を低下させた時点では、焼結体の粒界相の全体が非晶質化しており、従来の焼結体と同様の状態にある。図1(c)の例では、このような焼結体に対して、再加熱処理および制御冷却処理を連続的に行うことにより、粒界相の構成を、上述した構造(非晶質層部分に囲まれた領域に非磁性結晶部分が存在する構造)に変化させることができる。言い換えると、このような再加熱処理を、市場に出回っている焼結磁石に対して行うことにより、その焼結磁石の粒界相の構造を変化させ、本発明の焼結磁石を得ることが可能にある。\n\n【0039】\n\n800℃〜1000℃の再加熱処理を行っている間に焼結体の粒界部分は液相化し、原子が拡散する。そして、その後の徐冷過程で粒界相の中央部に非磁性の結晶部分が成長する。このとき、粒界相中に存在した遷移金属は粒界相中央部の非磁性結晶中に取り込まれるため、保磁力低下の原因となる強磁性化合物は形成されなくなる。更に、その後の温度T2での熱処理により、強磁性化合物の非磁性化が更に進行し、非磁性化合物が安定化すると考えられる。\n\n【0040】\n\nこのような再加熱処理および制御冷却の過程で生じている現象と同様の現象が、図1(b)に示す熱処理(制御冷却過程)でも生じていると考えられる。両者の間にある相違点は、一度非晶質化した粒界相を液相化するか否かの点にある。\n\n【0041】\n\nなお、図2(b)に示す粒界相と主相との界面はスムーズではないが、更に、430℃以上600℃以下の範囲での公知の時効処理を行うことにより、主相と粒界相との界面の形状をスムーズにすることが可能である。図2(c)は、時効処理後における粒界相およびその近傍を模式的に示している。このような時効処理によって界面が整合すると、更に保磁力が向上することになる。\n\n【0042】\n\n以下、図面を参照しながら、本発明の好ましい実施形態を説明する。\n\n【0043】\n\n[原料合金]\n\nまず、図3に示す単ロール式ストリップキャスター(急冷装置)を用いて、所望の組成を有するR-Fe-B系磁石用合金の原料合金を用意する。図3の急冷装置は、その内部を真空状態もしくは不活性ガス雰囲気での減圧状態にすることができる急冷室1を有しており、急冷室1の内部には、合金原料を溶解し、合金溶湯2を形成するための溶解炉3と、溶解炉3から供給される合金溶湯2を急冷·凝固させるための冷却ロール5と、溶解炉3から冷却ロール5に合金溶湯3を導くシュート(タンディッシュ)4と、凝固して冷却ロール5から剥離した薄帯状の合金7を回収するための回収容器8とが設けられている。\n\n【0044】\n\n溶解炉3は、合金原料を溶融することによって作製した溶湯2をシュート4に対して略一定の供給量で供給することができる。この供給量は、溶解炉3を傾ける動作を制御することなどによって、任意に調節することができる。\n\n【0045】\n\n冷却ロール5は、その外周面が銅などの熱伝導性の良好な材料から形成されており、例えば直径30cm〜100cmで幅が15cm〜100cmの寸法を有する。冷却ロール5の冷却はロール内部に通水することによって行なわれる。冷却ロール5は、不図示の駆動装置によって所定の回転速度で回転することができる。この回転速度を制御することによって、冷却ロール5の周速度を任意に調節することができる。この急冷装置による平均冷却速度は、冷却ロール5の回転速度などを選択することにより、例えば102℃/秒〜2\n\n×104℃/秒の範囲で制御可能である。\n\n【0046】\n\nシュート4の先端部は、冷却ロール5の最頂部とロールの中心とを結ぶ線に対してある程度の角度θを持った位置に配置される。シュート4上に供給された合金溶湯2は、シュート4の先端部から冷却ロール5に供給される。\n\n【0047】\n\nシュート4は、セラミックス等で構成され、溶解炉3から所定の流量で連続的に供給される合金溶湯2を一時的に貯湯するようにして流速を遅延し、合金溶湯2の流れを整流することができる。\n\n【0048】\n\nシュート4を用いることによって、冷却ロール5の胴長方向(軸線方向)において、一定幅にわたって略均一な厚さに広げた状態で、合金溶湯2を供給することができる。シュート4は上記機能に加え、冷却ロール5に達する直前の合金溶湯2の温度を調整する機能をも有する。シュート4上における合金溶湯2の温度は、液相線温度よりも100℃以上高い温度であることが望ましい。合金溶湯2の温度が低すぎると、急冷後の合金特性に悪影響を及ぼす初晶が局所的に核発生し、これが凝固後に残存してしまうことがあるからである。シュート4上での溶湯滞留温度は、溶解炉3からシュート4に注ぎ込む時点での溶湯温度やシュート3自体の熱容量などを調節によって制御することができるが、必要に応じてシュート加熱設備(不図示)を設けても良い。\n\n【0049】\n\n上記の急冷装置を用いて、例えばNd:33質量%、Dy:1.0質量%、Co:1.0質量%、B:1.0質量%、残部Feおよび不可避不純物(MnおよびSiは0.1質量%以下)からなる組成の合金を溶融し、合金溶湯を形成する。この合金溶湯を1350℃に保持した後、冷却ロールの表面と接触させ、合金溶湯を急冷し、厚さ約0.1〜5mmのフレーク状合金鋳塊を得た。このときの急冷条件は、ロール周速度約1〜3m/秒、平均冷却速度102〜2×104℃/秒とした。\n\n【0050】\n\nこうして作製した急冷合金鋳片を、次の水素粉砕前に1〜10mmの大きさのフレーク状に粉砕する。なお、ストリップキャスト法による原料合金の製造方法は、例えば米国特許第5,383,978号明細書にも開示されている。\n\n【0051】\n\n[第1粉砕工程]\n\n上記のフレーク状に粗く粉砕された原料合金鋳片を複数の原料パック(例えばステンレス鋼製)に充填し、ラックに搭載する。この後、原料パックが搭載されたラックを水素炉の内部へ挿入する。次に、水素炉の蓋体を閉じて、水素脆化処理(以下、「水素粉砕処理」と称する場合がある)工程を開始する。水素粉砕処理は、例えば図4に示す温度プロファイルに従って実行する。図4の例では、まず真空引き過程Iを0.5時間実行した後、水素吸蔵過程IIを2.5時間実行する。水素吸蔵過程IIでは、炉内に水素ガスを供給し、炉内を水素雰囲気にする。そのときの水素圧力は、200〜400kPa程度が好ましい。\n\n【0052】\n\n続いて、0〜3Pa程度の減圧下で脱水素過程IIIを5.0時間実行した後、アルゴンガスを炉内に供給しつつ、原料合金の冷却過程IVを5.0時間実行する。\n\n【0053】\n\n冷却過程IVにおいて炉内の雰囲気温度が比較的に高い段階(例えば、100℃を超えるとき)では、常温の不活性ガスを水素炉の内部に供給し、冷却する。その後、原料合金温度が比較的低いレベルに低下した段階(例えば、100℃以下のとき)で、常温よりも低い温度(例えば室温マイナス10℃程度)に冷却した不活性ガスを水素炉10内部に供給することが冷却効率の観点から好ましい。アルゴンガスの供給量は、10〜100Nm3/min程度にすればよい。\n\n【0054】\n\n原料合金の温度が20〜25℃程度にまで低下したら、ほぼ常温(室温よりも低いが、室温との差が5℃以下の範囲の温度)の不活性ガスを水素炉内部に送風し、原料の温度が常温レベルに達するのを待つことが好ましい。こうすることによって、水素炉の蓋体を開放した際に、炉内部で結露が生じる事態を避けることができる。結露によって炉内部に水分が存在していると、真空引き工程でその水分が凍結·気化するため、真空度を上昇させにくくなり、真空引き過程Iに要する時間が長くなってしまうので好ましくない。\n\n【0055】\n\n水素粉砕後の粗粉砕合金粉末を水素炉から取り出す際、粗粉砕粉が大気と接触しないように、不活性雰囲気下で取り出し動作を実行することが好ましい。そうすれば、粗粉砕粉が酸化·発熱することが防止され、磁石の磁気特性が向上するからである。次に、粗粉砕された原料合金は複数の原料パックに充填され、ラックに搭載される。\n\n【0056】\n\n上記水素処理によって、希土類合金は例えば0.1mm〜数mm程度の大きさに粉砕され、その平均粒径は500μm以下となる。水素粉砕後、脆化した原料合金をロータリクーラなどの冷却装置によって、より細かく解砕するともに冷却することが好ましい。比較的高い温度状態のまま原料を取り出す場合は、ロータリクーラなどによる冷却処理の時間を相対的に長くすれば良い。\n\n【0057】\n\n水素粉砕により作製した粗粉砕粉の表面には、Nd等の希土類元素が多く露出しており、非常に酸化されやすい状態にある。次の微粉砕工程の前に、ステアリン酸亜鉛を粉砕補助剤として0.04質量%程度添加する。\n\n【0058】\n\n[第2粉砕工程]\n\n次に、第1粉砕工程で作製された粗粉砕粉に対してジェットミル装置を用いて微粉砕を実行する。本実施形態では、超微粉除去に適したサイクロン分級機が粉砕機に接続されている。\n\n【0059】\n\n以下、図5を参照しながら、ジェットミル装置を用いて行う微粉砕工程(第2粉砕工程)を詳細に説明する。\n\n【0060】\n\n図示されるジェットミル装置10は、第1粉砕工程で粗く粉砕された希土類合金(被粉砕物)を供給する原料投入機12と、原料投入機12から投入された被粉砕物を粉砕する粉砕機14と、粉砕機14で被粉砕物を粉砕して得られた粉体を分級するサイクロン分級機16と、サイクロン分級機16によって分級された所定の粒度分布を有する粉末を集める回収タンク18とを備えている。\n\n【0061】\n\n原料投入機12は、被粉砕物を収容する原料タンク20と、原料タンク20からの被粉砕物の供給量をコントロールするモータ22と、モータ22に接続されたスパイラル状の供給機(スクリューフィーダ)24とを有している。\n\n【0062】\n\n粉砕機14は、縦長の略円筒状の粉砕機本体26を有しており、粉砕機本体26の下部には、不活性ガス(例えば窒素)を高速で噴出させるノズルを取り付けるための複数のノズル口28が設けられている。粉砕機本体26の側部には、粉砕機本体26内に被粉砕物を投入するための原料投入パイプ30が接続されている。\n\n【0063】\n\n原料投入パイプ30には、供給する被粉砕物を一旦保持し粉砕機14内部の圧力を閉じ込めるためのバルブ32が設けられており、バルブ32は、一対の上バルブ32aと下バルブ32bとを有している。供給機24と原料投入パイプ30とはフレキシブルパイプ34によって連結されている。\n\n【0064】\n\n粉砕機14は、粉砕機本体26の内部上方に設けられた分級ロータ36と、粉砕機本体26の外部上方に設けられモータ38と、粉砕機本体26の上方に設けられた接続パイプ40とを有している。モータ38は分級ロータ36を駆動し、接続パイプ40は分級ロータ36で分級された粉体を粉砕機14の外部に排出する。\n\n【0065】\n\n粉砕機14は、支持部となる複数の脚部42を備えている。粉砕機14の外周近傍には基台44が配設され、粉砕機14は、脚部42によって基台44上に載置される。本実施形態では、粉砕機14の脚部42と基台44との間には、ロードセルなどの重量検出器46が設けられる。この重量検出器46からの出力に基づいて、制御部48はモータ22の回転数を制御し、それによって被粉砕物の投入量をコントロールすることができる。\n\n【0066】\n\nサイクロン分級機16は、分級機本体64を有し、分級機本体64の内部には、排気パイプ66が上方から挿入されている。分級機本体64の側部には、分級ロータ36で分級された粉体を導入する導入口68が設けられ、導入口68はフレキシブルパイプ70によって接続パイプ40と接続されている。分級機本体64の下部には取出口72が設けられ、この取出口72に所望の微粉砕粉末の回収タンク18が接続されている。\n\n【0067】\n\nフレキシブルパイプ34および70は、樹脂もしくはゴムなどによって構成されたもの、または剛性の高い材料を蛇腹状もしくはコイル状に構成することによって柔軟性を持つように構成されたものであることが好ましい。このような柔軟性のあるパイプ34および70を用いると、原料タンク20、供給機24、分級機本体64、および回収タンク18の重量変化が粉砕機14の脚部42には伝達されない。そのため、脚部42に設けた重量検出器46によって重量を検出すれば、粉砕機14内に滞留した被粉砕物の重量やその変化量を正確に検知でき、粉砕機14内に供給する被粉砕物の量を正確に制御することができる。\n\n【0068】\n\n次に、上記のジェットミル装置10による粉砕方法を説明する。\n\n【0069】\n\nまず、被粉砕物を原料タンク20に投入する。原料タンク20内の被粉砕物は、供給機24によって粉砕機14へ供給される。このとき、モータ22の回転数を制御することによって被粉砕物の供給量を調節することができる。供給機24から供給される被粉砕物は、バルブ32において一旦堰き止められる。ここで一対の上バルブ32a、下バルブ32bは、交互に開閉動作を行っている。すなわち、上バルブ32aが開のとき、下バルブ32bは閉状態となり、上バルブ32aが閉状態のとき、下バルブ32bは開状態となる。このように一対のバルブ32a、32bを交互に開閉することによって、粉砕機14内の圧力が原料投入機12側に漏れないようにすることができる。その結果、被粉砕物は、上バルブ32aが開状態となったときに一対の上バルブ32aと下バルブ32bとの間に供給される。そして、次に下バルブ32bが開状態となったときに、原料投入パイプ30に導かれ、粉砕機14内に導入されることになる。バルブ32は制御回路48とは別のシーケンス回路(図示せず)によって高速に駆動され、被粉砕物が粉砕機14内に連続的に供給される。\n\n【0070】\n\n粉砕機14内に導入された被粉砕物は、ノズル口28からの不活性ガスの高速噴射によって粉砕機14内に巻き上げられ、装置内で高速気流とともに旋回する。そして、被粉砕物同士の相互衝突によって細かく粉砕される。\n\n【0071】\n\nこのようにして微粉砕された粉末粒子は上昇気流に乗って分級ロータ36に導かれ、分級ロータ36で分級され、粗い粉体は再度粉砕されることになる。一方、所定粒径以下に粉砕された粉体は、接続パイプ40、フレキシブルパイプ70を経由して導入口68からサイクロン分級機16の分級機本体64内に導入される。分級ロータ36を用いることによ\n\nり、粒度分布のピークを示す粒径よりも粒径の大きな粉末粒子を効率的に除去することができる。最終的に得られる粉末中に粒径10μmを超える粗い粉末粒子が多く存在していると、焼結磁石の保磁力が低下してしまうため、分級ロータ36を用いて粒径10μmを超える粉末粒子を低減することが好ましい。本実施形態では、最終的に得られる粉末において、粒径10μmを超える粒子の粉末全体の粒子体積の10%以下に調節している。\n\n【0072】\n\n分級機本体16内では、所定粒径以上の相対的な大きな粉末粒子が下部に設置された回収タンク18に堆積されるが、超微粉は不活性ガス気流とともに排気パイプ66から外部に排出される。本実施形態では、排気パイプ66を通じて超微粉を除去し、それによって回収タンク18で捕集する粉末に占める超微粉(粒径:1.0μm以下)の体積比率を低減する。好ましい実施形態において、超微粉(粒径:1.0μm以下)の体積比率は10%以下に調節される。\n\n【0073】\n\nこのようにしてRリッチな超微粉が取り除かれると、焼結磁石中の希土類元素Rが酸素との結合に消費される量を少なくし、磁石特性を向上させることができる。\n\n【0074】\n\n上述のように本実施形態では、ジェットミル装置(粉砕機14)の後段に接続する分級機としてブローアップ付きのサイクロン分級機16を用いている。このようなサイクロン分級機16によれば、所定粒径以下の超微粉は回収タンク18に捕集されることなく反転上昇し、パイプ66から装置外へ排出される。\n\n【0075】\n\nパイプ66から装置外へ取り除く微粉の粒径は、サイクロンの各部パラメータを適切に規定し、不活性ガス流の圧力を調整することによって制御することができる。\n\n【0076】\n\n本実施形態によれば、平均粒径(FSSS粒径)が例えば4.0μm以下であり、しかも、粒径1.0μm以下の超微粉の体積が粉末全体の体積の10%以下である合金粉末を得ることができる。\n\n【0077】\n\n粉砕工程における酸化をできる限り抑制するためには、微粉砕を行う際に用いる高速気流ガス(不活性ガス)中の酸素量を、例えば1000〜20000体積ppm程度の範囲内に抑えることが好ましく、5000〜10000体積ppm程度に低く抑えることが更に好ましい。高速気流ガス中の酸素濃度を制御する微粉砕方法は、特公平6-6728号公報に記載されている。\n\n【0078】\n\n上述のように微粉砕時における雰囲気中に含まれる酸素の濃度を制御することによって、微粉砕後における合金粉末の酸素含有量を全体の6000質量ppm以下に調整することが好ましい。希土類合金粉末中の酸素量含有量が6000質量ppmを超えて多くなりすぎると、焼結磁石中において非磁性酸化物の占める割合が増加し、最終的な焼結磁石の磁気特性が劣化してしまうからである。\n\n【0079】\n\nなお、本実施形態では、Rリッチな超微粉を適切に除去しているため、微粉砕時の不活性ガス雰囲気中における酸素濃度を調節することによって、粉末の酸素濃度を6000質量ppm以下に制御することが可能であるが、もしもRリッチ超微粉の除去を実行せずに、超微粉の体積比率が全体の10%を超えてしまうと、如何に不活性ガス雰囲気中の酸素濃度を低減しても最終的に得られる粉末中の酸素濃度は6000質量ppmを超えてしまうことになる。ただし、大気雰囲気で粉末を成形する場合には、成形体の酸化·発熱を抑制するため、粉末に3500質量ppm以上の酸素を含有させることが好ましい。\n\n【0080】\n\nなお、本実施形態では図5に示す構成を備えたジェットミル装置10を用いて第2粉砕工程を実行したが、本発明はこれに限定されず、他の構成を備えたジェットミル装置、ある\n\nいはその他のタイプの微粉砕装置(例えばアトライタやボールミル粉砕機)を用いてもよい。また、超微粉を除去するための分級機として、サイクロン分級機以外の分級機を用いても良い。\n\n【0081】\n\n[潤滑剤の添加]\n\n上記の方法で作製した原料合金の粉末に対して、脂肪酸エステルなどを主成分とする液体潤滑剤やバインダを添加する。例えばロッキングミキサーなどの装置を用い、不活性雰囲気中で潤滑剤を例えば0.15〜5.0質量%添加·混合することが好ましい。脂肪酸エステルとしては、カプロン酸メチル、カプリル酸メチル、ラウリン酸メチルなとが挙げられる。重要な点は、後の工程で潤滑剤が揮発し、除去され得ることにある。また、潤滑剤それ自体が合金粉末と均一に混合しにくい固形状のものである場合は、溶剤で希釈して用いれば良い。溶剤としては、イソパラフィンに代表される石油系溶剤やナフテン系溶剤等を用いることができる。潤滑剤添加のタイミングは任意であり、微粉砕前、微粉砕中、微粉砕後の何れであっても良い。液体潤滑剤は、粉末粒子の表面を被覆し、粒子の酸化防止効果を発揮する。また、液体潤滑剤は、プレスに際して成形体の密度を均一化して粉末粒子間の摩擦を低減し、圧縮性を改善するとともに、配向の乱れを抑制する機能をも発揮する。また、ステアリン酸亜鉛などの固体潤滑剤を用いる場合、微粉砕前に添加し、粉砕時に混合することができる。この混合は、微粉砕後にロッキングミキサーで行ってもよい。\n\n【0082】\n\n[プレス成形]\n\n次に、公知のプレス装置を用い、上述の方法で作製した磁性粉末を配向磁界中で成形する。本実施形態では、磁界中での配向性を高めるため、プレス圧力を5〜100MPa、好ましくは15〜40MPaの範囲内に調節する。プレス成形が終了した後、粉末の成形体は下パンチによって押し上げられ、プレス装置の外部へ取り出される。\n\n【0083】\n\n次に、成形体は、例えばモリブデン材料から形成された焼結用台板に載せられて台板とともに焼結ケースへ搭載される。焼結体を搭載した焼結ケースは焼結炉内に移送され、その炉内で焼結工程を行う。\n\n【0084】\n\n本実施形態における焼結工程は、バッチ炉や連続炉の何れを用いて行っても良い。本発明の好ましい実施形態では、図1(b)および(c)に示すようなプロファイルで成形体(焼結体)の温度が変化するように焼結炉のヒータや冷却機構を制御する。\n\n【0085】\n\nなお、図1(b)および(c)に示す温度プロファイルは、本発明で採用しえる一例に過ぎない。温度T1およびT3に保持する時間は、それぞれ、0.5〜100時間および0.01〜100時間の範囲内で適宜決定される。なお、温度T2での保持時間は、前述の通り、0.01時間以上100時間以下の範囲内で設定され、好ましくは、0.5時間以上50時間以下に設定される。\n\n【0086】\n\nまた、焼結温度T1に昇温するまでの温度プロファイルは、図1(b)および(c)に示すようなものに限定されず、焼結温度T1に達する前の温度で所定時間保持するような複数ステップの熱処理を行ってもよい。本発明にとって重要な点は、液相化された粒界相の冷却プロセスを制御することによって図2(b)に示す構造の粒界相を形成することにある。なお、焼結温度T1における保持時間を短くして主相の粒成長を抑制するため、焼結温度T1に達する前に800℃前後の温度で所定時間(例えば0.5〜6時間)だけ脱水素工程を行うことが好ましい。\n\n【0087】\n\n焼結のための熱処理を行うときの炉内の雰囲気は、成形体の粉末と反応しにくいガス(アルゴンガスなどの不活性ガス)が用いられる。また、雰囲気ガスの圧力は大気圧よりも低く設定されることが好ましく、例えば17Pa以下に減圧される。\n\n【0088】\n\n本実施形態の焼結工程の後、最終的に室温レベルまで冷却された焼結体に対しては、その後、切断加工、研磨加工、保護膜堆積などの処理が適宜実施される。\n\n【0089】\n\n[合金組成]\n\n希土類元素Rとして、具体的には、Pr、Nd、Sm、Gd、Tb、Dy、Ho、Er、Tm、Luの少なくとも一種類の元素を用いることが好ましい。充分な磁化を得るには、希土類元素Rのうちの50原子%以上がPrまたはNdの何れかまたは両方によって占められることが好ましい。\n\n【0090】\n\n希土類元素Rが8原子%を下回ると、α-Fe相の析出によって保磁力が低下するおそれがある。また、希土類元素Rが18原子%を超えると、目的とする正方晶R2Fe14B型化合物以外にRリッチの第2相が多く析出し、磁化が低下するおそれがある。このため、希土類元素Rは、全体の8〜18原子%の範囲内にあることが好ましい。\n\n【0091】\n\n磁石特性向上のため、Feの一部をCoで置換しても良い。Coの添加は、特に急冷合金を用いる場合に粒界相における強磁性化合物の析出を招いて保磁力低下を引き起こしやすいが、本発明によれば、0.5原子%以上のCo添加をした場合でも、強磁性のCo化合物はほとんど形成されず、保磁力の向上が実現する。Feと置換する遷移金属元素として、Co以外に、Ni、V、Cr、Mn、Cu、Zr、Mb、Moなどの遷移金属元素が用いられ得る。遷移金属元素全体のうち、Feの占める割合は50原子%以上であることが好ましい。Feの割合が50原子%を下回ると、Nd2Fe14B型化合物の飽和磁化そのものが減少するからである。\n\n【0092】\n\nBおよび/またはCは、正方晶Nd2Fe14B型結晶構造を安定的に析出するために必須である(特にBは必須である)。Bおよび/またはCの添加量が3原子%未満ではR2T17相が析出するため保磁力が低下し、減磁曲線の角型性が著しく損なわれる。また、Bおよび/またはCの添加量が20原子%を超えると、磁化の小さな第2相が析出してしまう。\n\n【0093】\n\n粉末の磁気的な異方性をより高めるためには、他の添加元素Mを付与してもよい。添加元素Mとしては、Al、Ti、V、Cr、Ni、Ga、Zr、Nb、Mo、In、Sn、Hf、Ta、Wからなる群から選択された少なくとも1種類の元素が好適に使用される。このような添加元素Mは全く添加されなくても良い。添加する場合は、添加量を3原子%以下にすることが好ましい。添加量が3原子%を超えると、強磁性ではなく第2相が析出して磁化が低下するからである。なお、磁気的に等方性の磁粉を得るには添加元素Mは不要だが、固有保磁力を高めるためにAl、Cu、Ga等を添加してもよい。\n\n【0094】\n\n[実施例と比較例]\n\n本実施例では、33質量%のNd、1.0質量%のDy、1.0質量%のCo、1.0質量%のB、およびFe(残余)を含有する合金の溶湯をストリップキャスト法で冷却凝固させた。\n\n【0095】\n\n上記の急冷合金を、前述した粉砕方法によって粉砕し、平均粒径(FSSS粒度)2.8〜4.0μm程度の微粉砕粉を作製した。粒度分布の測定は、sympatec社製の粒度分布測定装置(品番HELOS Particle Size Analyzer)を用いて行った。この粒度分布測定装置は、高速スキャンされるレーザビームが粒子によって遮れたときに透過光量の減少が生じることを利用し、レーザビームが粒子を通過するのに要した時間から粒径を直接的に求めることができる。\n\n【0096】\n\n次に、これらの粉末に対して、0.3質量%のカプロン酸メチルを石油系溶剤で希釈したものを添加し、混合してから、金型プレス装置によってプレス成形することにより、横20mm×縦20mm×高さ10mmのサイズを持つ粉末成形体を作製した。ブレス圧力は約35MPaとして、成形密度は4.5g/cm3とした。プレスに際し、1軸圧縮方向に対して垂直な方向の配向磁界(1.0MA/m)を印加した。\n\n【0097】\n\nプレス後、アルゴン雰囲気(圧力:2Pa)中で成形体を焼結した。焼結条件は以下の通りである。\n\n【0098】\n\n室温から温度T1(=1080℃)の昇温速度:3℃/分)\n\n温度T1での保持時間:6時間\n\n温度T1から温度T2(=630℃)への冷却速度:1.25℃/分)\n\n温度T2での保持時間:12時間\n\n温度T2から室温の冷却速度:80℃/分)\n\n【0099】\n\n本実施例で得られた焼結磁石の保磁力iHcは、1232kA/m、残留磁束密度Brは1.35Tであった。\n\n【0100】\n\n次に、比較例として、同じ条件で作製した粉末成形体を用い、以下の熱処理条件で焼結工程を行った。\n\n【0101】\n\n室温から温度T1(=1080℃)の昇温速度:3℃/分)\n\n温度T1での保持時間:6時間\n\n温度T1から室温(=20℃)の冷却速度:80℃/分)\n\n時効処理:温度630℃で12時間\n\n【0102】\n\nこうして得られた比較例の焼結磁石の保磁力は、iHcが1159kA/m、残留磁束密度Brが1.35Tであった。\n\n【0103】\n\n実施例と比較例とを比べると、保磁力は同等だが、実施例では保磁力が約6%向上していることがわかる。\n\n【0104】\n\n実施例および比較例の焼結磁石について、透過電子顕微鏡(TEM)による観察を行った。図6および図7は、それぞれ、実施例および比較例についてのTEM写真である。TEM写真に示す部位1および3は主相領域を示し、部位2は粒界を示している。図6のTEM写真からわかるように、実施例の粒界相には、主相に接する側に非晶質層部分(厚さ:0.1nm〜10nm)が存在するとともに、非晶質層部分によって挟まれた領域(粒界相の中央部)に結晶層部分(厚さ:1nm〜10nm)が存在している。これに対して、図7のTEM写真からわかるように、比較例の粒界相は全体的に非晶質である。この非晶質層部分および結晶層部分の厚さは、結晶粒界の三重点を含まない場合の値であり、三重点近傍では、それぞれ、1000nmに達する場合がある。\n\n【0105】\n\n本実施例のTEM写真を解析したところ、本発明による希土類焼結磁石の任意断面においては、非磁性結晶層部分が粒界相中に占める面積の割合が20%以上であり、主相の平均粒径は、1.5μm以上20μm以下であった。粒界相の平均厚さは、1nm以上100nm以下であった。\n\n【0106】\n\nなお、本明細書における主相の平均結晶粒径は、JIS H0501に規定される方法によって測定した値を示している。\n\n【0107】\n\n【発明の効果】\n\n本発明によれば、焼結後の熱処理を最適化することにより、粒界相中に存在する遷移金属が非磁性化合物として粒界相中心部で結晶化し、その周囲に非晶質層が形成される。このような構造の粒界相は、逆磁区の発生を抑えるため、保磁力が向上した希土類磁石が提供される。\n\n【図面の簡単な説明】\n\n【図1】(a)は、従来技術における焼結工程の温度プロファイルを示すグラフであり、(b)は、本発明の第1の態様における焼結工程の温度プロファイルを示すグラフであり、(c)は、本発明の第2の態様における焼結工程の温度プロファイルを示すグラフである。各グラフとも、縦軸が温度、横軸が時間を示している。\n\n【図2】(a)は、従来の希土類焼結磁石における粒界相およびその近傍を模式的に示す断面図でり、(b)は、本発明の希土類焼結磁石における粒界相およびその近傍を模式的に示す断面図であり、(c)は本発明の焼結磁石の時効処理後における粒界相およびその近傍を模式的に示す断面図ある。\n\n【図3】本発明の実施形態に好適に用いられる単ロール式ストリップキャスターの構成を示す図である。\n\n【図4】本発明における粗粉砕工程で実行する水素粉砕処理の温度プロファイルの一例を示すグラフである。\n\n【図5】本発明における微粉砕工程を行うために好適に用いられるジェットミル装置の構成を示す断面図である。\n\n【図6】本発明の実施例における焼結磁石の断面組織構造を示すTEM写真である。\n\n【図7】比較例における焼結磁石の断面組織構造を示すTEM写真である。\n\n【符号の説明】\n\n1    急冷室\n\n2    合金溶湯\n\n3    溶解炉\n\n4    シュート(タンディッシュ)\n\n5    冷却ロール\n\n7    急冷凝固合金\n\n8    回収容器\n\n10    ジェットミル装置\n\n12    原料投入機\n\n14    粉砕機\n\n16    サイクロン分級機\n\n18    回収タンク\n\n20    原料タンク\n\n22    モータ\n\n24    供給機(スクリューフィーダ)\n\n26    粉砕機本体\n\n28    ノズル口\n\n30    原料投入パイプ\n\n32    バルブ\n\n32a  上バルブ\n\n32b  下バルブ\n\n34    フレキシブルパイプ\n\n36    分級ロータ\n\n38    モータ\n\n40    接続パイプ\n\n42    脚部\n\n44    基台\n\n46    重量検出器\n\n48    制御部\n\n64    分級機本体\n\n66    排気パイプ\n\n68    導入口\n\n70    フレキシブルパイプ\n\n72    取出口', '【0001】\n\n技术领域\n\n本发明涉及一种基于R-Fe-B的稀土磁铁和用于磁体的合金粉末,以及制造方法。这里,R是稀土元素,Fe是铁,B是硼,本说明书中的“稀土”在第3A组中加入钪(SC)和钇(Y)中。稀土元素R是一个元素的通用术语,稀土元素R是该稀土化的至少一个元素。\n\n【0002】\n\n发明背景\n\n通过烧结过程和通过研磨稀土磁铁(原料合金)形成的合金粉末之后,通过烧结过程和老化热处理工艺进行稀土烧结磁体。目前,两种类型的钐 - 钴磁铁和稀土 - 铁和硼基磁体被广泛用作稀土烧结磁体。其中,稀土,铁,硼型磁体(下文中称为“R-Fe-B基稀土磁铁”)表示各种永磁体中的最高磁能产品,价格相对较低。它是积极的采用各种电子设备。 R-Fe-B基稀土磁铁是2Fe.14由具有B型晶体结构的化合物和位于该主阶段的晶界部分的晶界相的主相。 Fe的一部分可以被诸如CO的过渡金属元素代替,或者B的一部分可以被C(碳)取代。为简单起见,部分进行这种元素取代的磁体在本文中也称为“R-Fe-B基稀土磁体”。\n\n【0003】\n\n用于R-Fe-B基稀土磁体的原料合金粉末可以通过包括粉碎原料合金的第一研磨步骤的方法和将原料合金精细粉碎的第二研磨步骤产生。。在这种情况下,在第一研磨步骤中,原料合金使用氢储存现象脆化,然后大致地磨削到几百μm或更小的尺寸,然后在第二磨削过程中大致挤压合金(粗磨)粉末通过喷射磨机装置等通过刷新磨削几μm的平均粒径等来精细研磨。在专利文献1中公开了这种研磨方法。\n\n【0004】\n\n原料合金本身有两种主要类型的制造方法。第一方法是一种铸锭铸造方法,其将原料合金的熔融金属放置在模具中并相对缓慢冷却。第二种方法是条形铸造方法,可快速冷却合金的熔融金属,单辊,双辊,旋转盘或旋转圆柱形模板等,并产生比铸锭合金更薄的凝固合金由离心铸造方法表示的合金熔融金属和淬火法。条带铸造方法例如在专利文献2中描述。\n\n【0005】\n\n在这种淬火的情况下,合金熔融金属的平均冷却速率为102°C / s或更多2×104它在°/秒或更小的范围内。因此,在本说明书中,合金熔融金属是102°C / s或更多2×104通过以℃的平均冷却速率淬火制备的合金,或者较少的平均冷却速率被称为“淬火合金”。通过淬火制造的淬火合金的厚度诸如条带铸造方法的厚度为0.03mm或更大且10mm或更小。合金熔融金属从冷却辊的接触表面(辊接触表面)凝固,并且晶体从辊接触​​表面沿厚度方向生长。结果,快速冷却合金是长轴方向尺寸为0.1μm以上且100μm或更小,并且长轴方向尺寸为5μm以上且500μm或更小。2Fe.14具有B型晶体结构的晶相(下文中,“r2Fe.14在B型晶相“)和2Fe.14B提供微晶结构,其含有富含R的相(相对高浓度的稀土元素R),其分散在晶相的晶界部分中。富含R的相是具有相对高浓度的稀土元素R,其厚度的非磁性相(可选)\n\n平面中的晶界相的宽度为10μm或更小。\n\n【0006】\n\n由于与传统铸锭铸造方法(模塑铸造)产生的合金(铸锭合金)相比,淬火合金在相对短的时间内冷却,因此组织最小化并且晶粒尺寸小。另外,由于晶粒被精细分散并且晶界的面积宽,并且R-富相位薄并蔓延到晶界中,因此R-富相位的分散性也是优异的。\n\n【0007】\n\n在通过上述方法共享这种淬火合金之后,粉末被压制装置压缩和模制,以制备粉末的模制体。通过烧结模制体,可以获得R-Fe-B基稀土磁体。\n\n【0008】\n\nR-Fe-B淬火合金的粉末成型体在1000至1100℃的温度下烧结。烧结过程是通过粉末中含有的相对熔点的低R-富型相变为液相而促进了烧结过程。在烧结在1000至1100℃的高温区域中进行后,形成烧结体,然后随后进行烧结体的冷却。此时,为了增强烧结磁体的特性,平均冷却速率增加到液相的液相阶段的含量。当烧结体温度从烧结温度降低到室温时,例如,在专利文献3至13中描述,以调节冷却速率并执行额外的热处理。\n\n【0009】\n\n由于R-Fe-B基稀土烧结磁体的矫顽力表达机制是新生型,因此晶界相的状态强烈影响矫顽力。通常,如果烧结后的平均冷却速率太慢,则已知晶界相完全结晶,并且矫顽力降低。也就是说,为了大量生产具有高矫顽力的烧结磁体,晶界相需要完全无态,并且当烧结体冷却到室温水平时,平均冷却速率为100℃。它已经完成等于或多于一个。\n\n【0010】\n\n特别地,如果将CO添加到原料合金中,烧结后的平均冷却速率是缓慢的,ND(Fe1-xCO.x的)2由于诸如(X = 0.5至0.7)的铁磁性化合物在晶界相中沉淀,因此可以减少矫顽力。由此产生的这种铁磁性化合物可以通过加入900℃以上的高温热处理而非磁性,但是如果进行这种高温热处理,则烧结体的晶粒生长导致胁迫将减少矫顽力。\n\n【0011】\n\n另一方面,为了改善磁体特性的目的,进行约400至500℃的热处理(老化处理)用于烧结体。在烧结后立即在烧结体的晶界中存在细微不均匀,防止矫顽力的改善,但是如果热处理在约400至500℃下进行此类烧结材料,因此基础设施与基础设施之间的界面以来主相位变化为平滑的方式,改善了矫顽力。\n\n【0012】\n\n专利文献1\n\n典型的公众假期6-6728\n\n专利文献2.\n\n美国专利号5,383,978\n\n专利文献3.\n\nJP 60-77961.\n\n专利文献4.\n\nJP-A-60-182107\n\n专利文献5.\n\nJP 60-184626.\n\n专利文献6.\n\nJP 61-87825\n\n专利文献7.\n\nJP 61-81605.\n\n[专利文献8]\n\nJP-A-61-252604\n\n[专利文献9]\n\nJP-A-61-264133\n\n专利文献10.\n\n未审查 - 日本专利No.1-232704\n\n[专利文献11]\n\n特刊2-16368\n\n专利文献12.\n\n专利号2720040\n\n专利文献13.\n\n专利No.2948223\n\n【0013】\n\n本发明要解决的问题\n\n然而,当烧结由淬火合金制备的粉末的模塑制品时,即使热处理约400至500℃的热处理也不足,矫顽力的改善效果也不充分,并且更高的矫顽力实现。需要详细分析和修改晶界阶段。\n\n【0014】\n\n本发明已经鉴于这些要点,以及它的主要目的\n\n【0015】\n\n[解决问题的手段]\n\n本发明的稀土烧结磁体是2Fe.14具有由B型晶体结构(R是稀土元素)组成的主相的颗粒结合磁体和位于主相的晶界部分的晶界相,并且晶界相是非磁性的晶体层部分包含在主相面的非晶体层部分中,并且存在于由非晶层部分夹在中间的区域中的非磁性晶体层部分。\n\n【0016】\n\n在优选实施例中,任意横截面中的非磁性晶体层部分占据其中非磁性晶体层部分的面积的比例是20%或更多。\n\n【0017】\n\n在优选的实施方案中,主阶段的平均粒度为1.5μm以上且20μm或更小。\n\n【0018】\n\n在优选实施例中,非磁性晶体层部分包括过渡金属元件。\n\n【0019】\n\n在优选的实施方案中,Mn和Si的含量浓度调节至1重量%或更少。\n\n【0020】\n\n在优选的实施方案中,晶界相的平均厚度为1nm以上且100nm或更小。\n\n【0021】\n\n在优选的实施方案中,原料合金是淬火合金。\n\n【0022】\n\n根据本发明的稀土烧结磁体的制造方法是2Fe.14一种制造具有包含B型晶体结构(R是稀土元素)的主相的稀土烧结磁体的方法和具有位于主阶段的晶界部分的晶界相的稀土烧结磁体, R-Fe-制备B基淬火合金和粉末的粉末\n\n通过在1000℃或更高且1100℃的温度T1处烧结通过烧结形成烧结体,烧结体以温度T1至50℃/ min / min或更低的平均冷却速率冷却。该将烧结体温度降低到400℃以上温度T2的步骤为400℃或更高,并且相对于烧结体的温度T 2的热处理在0.01或更短时间内进行超过100小时或更短时间。\n\n【0023】\n\n根据本发明的制造其他稀土烧结磁体的方法是2Fe.14一种制造具有包含B型晶体结构(R是稀土元素)的主相的稀土烧结磁体的方法和具有位于主阶段的晶界部分的晶界相的稀土烧结磁体, R-FE-通过在1000℃或更高和1100℃或更低的温度下烧结粉末,通过烧结粉末的粉末的粉末和粉末形成烧结体的步骤。从温度T1冷却。根据将烧结体温度降低到低于400℃的温度的步骤,温度T3高于400℃以上的温度T2和900℃或更低,通过将烧结体以50℃/米或更低的平均冷却速率冷却烧结体,提高温度和将烧结体温度降低到温度T2的步骤的步骤。热处理相对于T2的温度T2包括执行大于0.01小时并且小于100小时的步骤。\n\n【0024】\n\n制造根据本发明的其他稀土烧结磁体的方法是2Fe.14一种制造具有由B型晶体结构(R是稀土元素)组成的主相的稀土烧结磁体的方法和具有位于主阶段的晶界部分的晶界相的稀土烧结磁体。2Fe.14制备烧结体的步骤,其具有由具有B型晶体结构的化合物和位于主相的晶界部分的化合物,以及400℃或更多的烧结体组成的烧结体。加热到高于900℃的温度T2的温度T3后,烧结体的温度通过冷却以平均冷却速率冷却至400℃或更高的温度T2。 50℃/ min或更少。包括在该温度下进行0.01小时或更长时间和100小时或更短的热处理。\n\n【0025】\n\n制备R-Fe-B淬火合金的粉末是原料合金的10个熔融金属2°C / s或更多2×104通过以℃/秒或更低的平均冷却速率冷却,制备淬火合金的步骤和研磨快速冷却合金的步骤。\n\n【0026】\n\n在优选的实施方案中,原料合金的熔融金属通过条带铸造方法冷却。\n\n【0027】\n\n在一个优选的实施方案中,研磨紧固合金的步骤包括通过氢处理的紧固合金的脆化。\n\n【0028】\n\n发明内容\n\n本发明人形成晶界相,该晶界相通过控制烧结在烧结淬火合金粉末(受控冷却)的成型体之后冷却烧结体的过程来尚未通过常规获得的新颖结构,已经发现矫顽力可以改进,并引入了本发明。\n\n【0029】\n\n首先,将参考图1和图2描述本发明的基本特征。1(a)至(c)。\n\n【0030】\n\n图。图1(a)显示了常规烧结过程中的典型温度曲线。在所示的示例中,烧结温度T1是1080℃,温度T1的保持时间为6小时。由于温度T1的六小时热处理,粉末成型体烧结以形成烧结体。此时的烧结体温是T1,并且晶界部分处于液相状态。此后,通过淬火从T1快速降低烧结体温。此时的平均冷却速率通常设定为至少100℃或更高,通常为约150℃/ min -/mination,并且烧结体的晶界相是无体化的。图。图2A示意性地示出了具有非晶态晶界相的传统稀土烧结磁体的组织结构\n\n这是一个表面视图。\n\n【0031】\n\n图。图1(b)示出了本发明采用的烧结和控制冷却的温度曲线的示例。在本发明中,在1000℃或更高和1100℃或更低的温度T1的温度T1的预定时间烧结,温度T1至50℃/ min或更低(优选为30℃/ m min /分钟或更少)在平均冷却速率下缓慢冷却,烧结体的温度降低至400℃或更高的温度T2和900℃或更低。然后,进行该温度T2的热处理进行预定时间,然后冷却到室温水平。在温度T2处的热处理之后的平均冷却速率可以以高于100℃/毫米的速率快速进行。\n\n【0032】\n\n在图1所示的示例中,如图1(b)所示,温度T1为1080℃,温度T2为630℃,并且温度T1施加到从温度T1冷却至温度T2 6小时。此时的平均冷却速率为1.25°C/min。另外,在温度T2处进行热处理12小时。\n\n【0033】\n\n在烧结骤冷的合金粉末之后,烧结体的晶界面具有如图2(b)所示的结构。以这种方式冷却。那是,r2Fe.14具有B型晶体结构(R是稀土元素)的化合物,非晶层部分(厚度:,例如0.1nm至10nm)和由非晶层部分夹在中的区域。具有结构的晶界相形成包含存在的晶体层部分(厚度:,例如,1nm至10nm)的层状结构。非晶层部分是含有相对大量的稀土元素的区域,晶体层部分是含有过渡金属的非磁性区域。上述非晶层部分和晶体层部分的厚度在不包括晶界附近的区域中的厚度,并且晶界相的平均厚度是例如1.2nm或更大且30nm或少。三角点附近的厚度分别可以达到1000nm,并且当注意到三射点时,整个晶粒边界相的平均厚度为1nm或更大,100nm或更小。\n\n【0034】\n\n在烧结后淬火,如图2所示。如图2A所示,晶界相是无体化,例如NDCO2过渡金属的铁磁性化合物或铁磁性元件,例如沉淀物。特别地,当粉末由淬火合金制成如本发明中,过渡金属的铁磁化合物在晶界相中容易沉淀。在通过条带铸造方法生产的淬火合金中,直到原料合金的熔融金属较短,因此在达到过渡金属的分布之前完成熔融金属中包含的过渡金属的分布完成完整的均衡状态。它将是。结果,晶界相中存在许多过渡金属,并且易于形成铁磁性化合物。\n\n【0035】\n\n另一方面,根据本发明,即使使用淬火合金粉末制造烧结体,通过适当地控制冷却过程的温度曲线,通过适当地控制晶界相中存在的过渡金属。它可以集中作为一个位于晶界相的中心的非磁性化合物,结果,可以改善磁体的矫顽力。特别地,在本发明中,由于所有颗粒边界相没有结晶并且主相的表面被覆盖,因此抑制了反向幅度的发生,并且提供了传统的晶界相。据信更高矫顽力比烧结磁铁表示。\n\n【0036】\n\n另外,在烧结体从温度T1单调的情况下单调的情况下,如图1所示的重新热处理。在烧结期间在温度T1和热处理期间进行图1(c)温度t2。它也很好。\n\n【0037】\n\n图。图1C示出了本发明中使用的另一烧结过程的热处理轮廓的一个例子。在该示例中,在烧结之后,将烧结体温度降至低于400℃以下的低温(通常在室温水平)。此时的平均冷却速率可能超过现有技术中的100℃/米。接下来,将烧结体重新加热至温度T3(设定为800℃或更高,1000℃或更低),并且在保持预定时间后,平均冷却速率为50°C /最小或更少的固结被冷却(受控冷却),并且烧结体温还原为T2,并且温度T2保持预定时间。在图1的示例中如图1(c)所示,温度T3为750℃,温度T3的保持时间为8小时\n\nT2度T2为630℃,温度T2的保持时间为12小时。\n\n【0038】\n\n在图1所示的温度剖视图中,如图1(c)所示,在执行重新热处理之前与烧结相关的部分与图1所示的温度曲线相同,如图1(a)所示的温度曲线相同,所以在烧结后,低温低于400 ℃。当烧结体温降低到(通常是室温水平)时,烧结体的整个晶界相是无体化的,并且与常规烧结体相同。在图1的示例中,如图1(c)所示,通过连续地执行再加热处理和相对于这种烧结体的冷却处理来进行晶界相的结构,上述结构(无定形层部分是非磁性晶体部分在被包围的地区变化。换句话说,这种再加热过程是在烧结磁体上进行的,并且烧结磁体的晶界相的结构改变,并且本发明的烧结磁体是可能的。\n\n【0039】\n\n虽然进行了800℃至1000℃的再加热处理,但烧结体的晶界面是液相,并且原子被扩散。然后,在随后的逐渐冷却过程中,非磁性晶体部分在晶界相的中心部分处生长。此时,由于存在于晶界相中的过渡金属在晶界相位部分处的非磁性晶体中,因此不形成导致矫顽力减小的铁磁化合物。此外,认为铁磁性化合物的非磁性化合物进一步通过随后温度T2的热处理进一步进行,并且稳定非磁性化合物。\n\n【0040】\n\n考虑到与这种再加热处理和控制冷却过程中产生的现象相同的现象也在图2所示的热处理(控制冷却过程)中产生。1(b)。两者之间的差异是它们是否是液相作为非晶晶界相。\n\n【0041】\n\n虽然图2B所示的晶界相和主阶段之间的界面和主阶段之间的界面不平滑,主相和晶界通过在430℃或更高和600℃或更低的情况下进行已知的老化处理可以平滑相位界面的形状。图。图2C示意性地示出了老化处理后的晶界相及其附近。当通过这样的老化过程对准界面时,进一步提高矫顽力。\n\n【0042】\n\n在下文中,将参考附图描述本发明的优选实施例。\n\n【0043】\n\n[原料合金]\n\n首先,使用图1所示的单辊式条带脚轮(骤冷装置)制备具有所需组合物的R-Fe-B基磁体合金的原料合金。图3的淬火装置。图3的淬火室1具有真空状态或惰性气体气氛的真空或惰性气体气氛,并溶解淬火室1内的合金原料,并合金冷却辊5以便快速冷却和固化从熔化炉3和从熔化炉3的冷却辊5供应的熔融金属2,以及来自熔化炉3的冷却辊5(Tan盘4和回收容器8,用于收集薄形合金7剥离从冷却辊5提供。\n\n【0044】\n\n熔融炉3可以提供通过将合金原料熔化具有相对于斜槽4的基本恒定的供应量而产生的熔融金属2。通过控制倾斜熔化炉3等的操作可以通过任意调整该供电量。\n\n【0045】\n\n冷却辊5由具有诸如铜的良好导热率的材料形成,并且在直径为30cm至100cm至100cm的直径为15cm至100cm的尺寸。冷却辊5的冷却通过穿过辊来进行。冷却辊5可以通过驱动装置(未示出)以预定的旋转速度旋转。通过控制这种转速,可以任意调节冷却辊5的外围速度。通过选择冷却辊5等的旋转速度,淬火装置的平均冷却速率是例如10的。2°C /秒〜2\n\n×104它可控制在°C./sec的范围内。\n\n【0046】\n\n滑槽4的尖端设置在相对于连接冷却辊5的顶部和辊的中心的线具有一定程度的角度θ的位置。在滑槽4上提供的合金熔融金属2从斜槽4的尖端供应到冷却辊5。\n\n【0047】\n\n滑槽4由陶瓷等组成,并且通过临时将从熔化炉3连续供应的合金熔融金属2暂时延迟流速,并且可以完成整流合金熔融2 2的流动。\n\n【0048】\n\n通过使用滑槽4,可以在冷却辊5(轴向)在固定宽度上延伸到基本均匀的厚度的状态下供应合金熔融金属2。斜槽4还具有在除了上述功能之外在到达冷却辊5之前立即调节合金熔融金属2的温度的功能。期望在斜槽4上的合金熔融金属2的温度高于比液体温度高至少100℃。如果合金熔融金属2的温度过低,则在淬火后对合金特性产生不利影响的初级晶体在局部成核,这可能在凝结后保持。斜槽4上的熔融金属停留温度可以在从熔炼炉3倒入斜槽4时控制熔融金属温度和喷射3本身的热量,而是根据需要进行拍摄加热设备(未示出)你可能有一个)。\n\n【0049】\n\n使用上述淬火装置,例如,Nd:33重量%,Dy:1.0重量%,CO:1.0重量%,B:1.0重量%,残留的Fe和不可避免的杂质(Mn和Si为0.1%质量或更少)组合物的组合物熔化以形成合金熔融金属。将合金熔融金属保持在1350℃,与冷却辊的表面接触,淬灭熔融合金,并获得类似的合金铸锭。此时的淬火条件为辊圆周速度的约1至3米/秒,平均冷却速度102〜2×104°C. /秒。\n\n【0050】\n\n将如此制备的快速冷轧合金板坯在下一个氢研磨之前研磨成1至10mm的薄片。通过条带铸造方法制造原料合金的方法也公开了例如美国专利No.5,512。美国专利号5,383,978。\n\n【0051】\n\n[第一次研磨过程]\n\n在上述薄片中大致压碎的原料合金板粗地填充到多个原料包(例如,不锈钢)中并安装在齿条上。此后,将安装原料包的齿条插入氢气的内部。接下来,关闭氢反应器的盖子,开始氢气脆化步骤(下文中有时称为“氢碎过程”)。例如,根据图1所示的温度曲线进行氢研磨工艺。在图1的示例中如图4所示,在真空拉伸处理I在执行0.5小时之后,进行储氢过程II的2.5小时。在储氢过程II中,在炉内供应氢气,使炉子成为氢气氛。当时的氢气压力优选为约200至400kPa。\n\n【0052】\n\n随后,在将脱氢过程III在约0至3Pa的减压下运行后,在将氩气供应到炉中时,将原料合金的冷却过程IV进行5.0小时。\n\n【0053】\n\n在冷却过程IV处,在相对高的气氛温度(例如,当大于100℃)中,惰性气体的常温供应到氢反应器的内部并冷却。此后,在原料合金温度的相对较低水平的含量低于常温(例如,约100℃以下)的惰性气体低于常温(例如,约100℃或更低),并且将惰性气体冷却至低于普通温度的温度(例如,约合室温减去10℃)优选提供冷却效率的观点。 Allgon气体供应量为10至100nm3它可能是约/分钟。\n\n【0054】\n\n当原料合金的温度下降至约20至25℃时,它几乎常温(低于室温,但室温范围内的温度低于氢反应器,而原料优选等待温度的温度达到常温水平。通过这样做,当氢反应器的盖子打开时,可以避免在炉内发生冷凝的情况。如果通过冷凝在炉中存在水,则在真空拉伸过程中冷冻并蒸发水含量,从而增加了真空度,这是不可取的,因为真空拉法所需的时间我变长。\n\n【0055】\n\n当从氢反应器中除去氢研磨后的粗磨合金粉末时,优选在惰性气氛下进行去除操作,使得粗粉末粉末不接触大气。然后,防止它氧化和加热粗粉和发热,并且改善了磁体的磁特性。接下来,粗糙的原料合金填充在多个进料包中并安装在齿条上。\n\n【0056】\n\n通过上述氢处理,稀土合金接地为例如约0.1mm至几毫米的尺寸,平均粒径为500μm或更小。在氢气破碎之后,优选通过诸如旋转冷却器的冷却装置冷却纤维的原料合金。当用相对较高的温度状态取出原料时,通过转子层压器等冷却处理的时间相对较长。\n\n【0057】\n\n在通过氢研磨生产的粗粉末粉末表面上,暴露大量稀土元素,如Nd,并且非常氧化。在下一次研磨步骤之前,将硬脂酸锌作为研磨助剂加入至约0.04质量%。\n\n【0058】\n\n[第二磨练]\n\n接下来,使用喷射磨机装置相对于在第一研磨过程中制造的粗粉末粉末进行细细粉碎。在本实施例中,适用于超细粉末去除的旋风分类器连接到破碎机。\n\n【0059】\n\n在下文中,将参考图4详细描述使用喷射磨机装置进行的细碎步骤(第二研磨步骤)。\n\n【0060】\n\n所示的喷射铣削装置10是一种破碎机,该破碎机供应在第一研磨过程中大致粉碎的稀土合金(研磨),以及从原料输入装置12 14和收集罐18研磨冠部的破碎机收集通过研磨机14的粉末研磨粉末而获得的粉末,以及收集罐18,该收集罐18收集其具有由旋风分子分级器16的预定粒度分布的粉末。\n\n【0061】\n\n原料输入装置12控制要压碎的材料的供应量,并且电动机22从原料罐20控制产品的供应量,以及连接到电动机22的螺旋供应机器(螺丝车架)有24个。\n\n【0062】\n\n研磨机14具有纵向基本上圆柱形的破碎机主体26,并且在破碎机主体26的底部,多个喷嘴,用于高速连接惰性气体(例如,氮气)。提供嘴部28。在破碎机主体26的侧面上,连接用于将压碎产品插入破碎机主体26的原料输入管30。\n\n【0063】\n\n原料输入管30设置有阀32,用于临时保持供应的研磨材料并将压力限制在破碎机14内,并且阀32具有一对上阀32a和下阀32b。正在进行中。进料器24和原料输入管30通过柔性管34连接。\n\n【0064】\n\n研磨机14设置有设置在破碎机主体26和外部电动机38上方的分级转子36和设置在研磨机主体26上方的连接管40和连接管40。电动机38驱动分级转子36,并且连接管40用分级的转子36将研磨的粉末排出到研磨机14的外部。\n\n【0065】\n\n研磨机14设置有用作支撑件的多个腿42。底座44设置在破碎机14的外周附近,并且破碎机14通过腿部42放置在基部44上。在本实施例中,在破碎机14和基部44的腿部42之间提供诸如载荷电池的权重检测器46。基于来自权重检测器46的输出,控制单元48控制电动机22的旋转速度,从而控制钻孔产品的输入量。\n\n【0066】\n\n旋风分级器16具有分级器主体64,并且排气管66从分级器主体64上方插入。入口68设置在分级器主体64的一侧,入口68,用于用分级转子36引入分级粉末,并且入口68通过柔性管70连接到连接管40。移除口72设置在分级器主体64的下部,并且所需粉碎粉末的回收罐18连接到出口72。\n\n【0067】\n\n柔性管34和70优选地配置成通过在波纹管或线圈形状中构造材料或刚性材料或刚性材料来具有柔韧性。利用这种柔性管34和70,原料罐20,供应机24,分级器主体64和回收罐18的重量变化不会被传递到破碎机14的腿部42。因此,如果在腿部42中设置的重量检测器46检测重量,则可以精确地检测在破碎机14中染色的重量和其变化量,并且供应破碎机14。该可以准确控制物体量。\n\n【0068】\n\n接下来,将描述通过上述喷射磨机装置10的研磨方法。\n\n【0069】\n\n首先,将要压碎的产品引入原料罐20中。在原料罐20中挤压的产品通过进料器24供应到破碎机14。此时,可以通过控制电动机22的旋转速度来调节钻孔产品的供应量。从供应装置24供应的钻孔材料被阀32暂时阻挡。这里,该对上阀32a和下阀32b交替地执行打开和关闭操作。也就是说,当上阀32a打开时,下阀32b关闭,并且当上阀32a处于关闭状态时,下阀32b打开。通过以这种方式替代地打开和关闭一对阀32a和32b,破碎机14中的压力不能泄漏到原料输入装置12侧。结果,当上阀32a打开时,在上阀32a和下阀32b之间供应待挤压的产品。然后,当下阀32b打开时,将其被引导到原料输入管30并引入破碎机14。阀32通过与控制电路48分开的序列电路(未示出)以高速驱动,并且将压碎的产品连续地供应到破碎机14中。\n\n【0070】\n\n引入破碎机14的钻孔材料通过从喷嘴端口28的高速注入惰性气体并在装置中的快速空气流枢转,在破碎机14中卷绕在破碎机14中。然后,通过研磨之间的相互碰撞来精细地压碎。\n\n【0071】\n\n因此,细碎的粉末颗粒在上游流上乘以分级的转子36并由分级转子36分类,并且粗粉末将再次被压碎。另一方面,通过连接管40和柔性管70从入口68引入在预定粒度或更小之下粉碎的粉末的粉末。通过使用分类转子36\n\n可以有效地除去具有较大粒径的粉末颗粒,比粒径指示粒度分布的峰值。如果在最终获得的粉末中存在大量粗粉颗粒10μm的粒径,则烧结磁体的矫顽力降低,使得使用分类转子36的粒径大于10μm的粒径。它是优选减少。在本实施方案中,在最终获得的粉末中,将其调节至颗粒总粉末的颗粒体积的10%或更少,超过粒径为10μm。\n\n【0072】\n\n在分类器主体16中,在安装在下部的回收罐18上沉积具有预定粒径或更多的相对大的粉末颗粒,但是超细粉末与排气管66排出到排气管66惰性气体空气流量。。在本实施例中,通过排气管66除去超细粉末,这降低了占据由回收罐18收集的粉末的超细粉末(粒径:1.0μm或更小)的体积比。在优选的实施方案中,超细粉末的体积比(粒径:1.0μm或更小)调节至10%或更低。\n\n【0073】\n\n因此,当除去R富氢的超细粉末时,烧结磁体中的稀土元素R的量通过与氧键合而消耗,并且可以提高磁体特性。\n\n【0074】\n\n如上所述,在本实施例中,使用作为连接到射流器件14的后续阶段的分类器的旋转旋流器分类器16。根据这种旋风分离器16,倒置具有预定粒径或更小的高血清粉末而不被收集在回收罐18中,并且从管66排出到装置中。\n\n【0075】\n\n通过适当地限定旋风的相应部分参数并调节惰性气体流的压力,可以通过适当地限定从管66从管66移除到装置的外部的细粉末的粒度。\n\n【0076】\n\n根据本实施方案,平均粒径(FSSS粒径)例如为4.0μm以下,粒径为1.0μm以下的超细粉末的体积是具有10%体积的合金粉末或少量粉末的总体积。能够。\n\n【0077】\n\n为了尽可能地抑制研磨过程中的氧化,优选抑制在执行细粉化时使用的高速空气流气体(惰性气体)中的氧气量,例如,在大约的范围内1000〜20000体积PPM,更优选抑制5000至10000体积PPM的低。在日本专利公开No.6-6728中描述了用于控制快速气流气体中的氧浓度的细碎方法。\n\n【0078】\n\n如上所述,通过在细粉碎时控制大气中所含的氧的浓度,优选在细磨后调节合金粉末的氧含量,达到6000质量ppm或更小。如果稀土合金粉末中的氧含量大于6000质量ppm,则烧结磁体中的非磁性氧化物的比例增加,并且最终烧结磁体的磁特性劣化,这是因为它将。\n\n【0079】\n\n在本实施方案中,由于富含R的超细粉末被适当地除去,因此通过在粉碎时调节惰性气体气氛中的氧浓度来控制粉末的氧浓度为6000质量%或更少。虽然它是可以做,如果超细粉末的体积比超过总量的10%而不进行R富含R的超细粉末,则它降低了惰性气体气氛中的氧浓度。所得粉末中的氧浓度也超过6000% PPM。然而,在空气气氛中模塑粉末的情况下,优选含有具有3500质量ppm或更多的粉末以抑制模塑体的氧化和发热的氧气。\n\n【0080】\n\n在本实施例中,使用具有图5所示的配置的喷射磨机装置10进行第二研磨处理。如图5所示,本发明不限于此,并且具有另一种构造的喷射磨机装置。\n\n可以使用其他类型的精细研磨装置(例如,变速器和球磨机)。此外,作为用于去除超细粉末的分类器,可以使用除旋风分类器之外的分类器。\n\n【0081】\n\n[添加润滑剂]\n\n将液体润滑剂或具有脂肪酸酯或粘合剂的粘合剂加入到通过上述方法产生的原料合金的粉末中。例如,优选使用诸如锁定混合器的装置加入和混合润滑剂,例如0.15至5.0质量%。脂肪酸酯的实例包括甲基己酸,甲基纤维素和月桂酸甲酯。重要点是润滑剂可以在后面的步骤中挥发和除去。另外,当润滑剂本身是与合金粉末均匀混合的固相片时,可以通过用溶剂稀释来使用。作为溶剂,可以使用由异戊烷烃,环烷溶剂等表示的石油溶剂。润滑剂添加的定时是任意的,并且可以在研磨和粉碎过程中碾磨。液体润滑剂覆盖粉末颗粒的表面以施加颗粒的抗氧化效果。另外,液体润滑剂具有降低粉末颗粒之间的摩擦程度并通过在压制时穿过模塑体的密度来改善可压缩性并抑制取向的干扰。另外,当使用固体润滑剂如锌硬脂酸锌时,可以在粉碎并混合在研磨时添加。可以在细磨后用锁定混合器进行该混合。\n\n【0082】\n\n[压制成型]\n\n接下来,使用已知的压制装置,并且通过上述方法制备的磁粉在定向磁场中模制。在本实施例中,压力压力在5至100MPa,优选15至40MPa的范围内调节,以增加磁场的取向。在完成压制完成之后,粉末的模制体被下部冲头推向并被提取到压制装置的外部。\n\n【0083】\n\n接下来,模制体安装在由例如钼材料形成的烧结底板上,并且与板板一起安装在烧结盒上。安装有烧结体的烧结壳体被转移到烧结炉中,并且在炉中进行烧结过程。\n\n【0084】\n\n可以使用批炉或连续炉中的任何一种来执行本实施例中的烧结步骤。在本发明的一个优选实施例中,控制烧结炉的加热器或冷却机构,使得模制体(烧结体)的温度在图1和2中所示的轮廓中变化。1(b)和1(c) 。\n\n【0085】\n\n图1和图2中所示的温度分布包括:图1(b)和(c)仅仅是采用本发明的示例。在温度T1和T3处保持的时间在0.5至100小时和0.01至100小时的范围内。温度T2处的保持时间设定在0.01小时至100小时的范围内,并且优选设定为0.5小时以上且50小时或更短。\n\n【0086】\n\n此外,温度曲线直到烧结温度T1的温度升高不限于图1和2中所示的那些。在达到烧结温度T1之前,在图1B和1C中,并在温度下保持预定时间。多个步骤的热处理可以进行。本发明的一个重要点是通过控制液相的冷却过程来形成图1所示结构的晶界相。为了在烧结温度T1处缩短保持时间并抑制主相的晶粒生长,在到达烧结温度T1之前通过预定时间(例如,0.5至6小时)的脱氢过程。优选地。\n\n【0087】\n\n在炉内的大气中进行烧结时,使用气体(诸如氩气的惰性气体),其难以与模塑主体的粉末反应。大气气体的压力优选设定为低于大气压,并且减少到例如17Pa或更小。\n\n【0088】\n\n在本实施例的烧结步骤之后,在最终冷却至室温水平的烧结体上适当地进行诸如切割处理,抛光和保护膜沉积的处理。\n\n【0089】\n\n[合金组成]\n\n作为稀土元素R,具体地说,优选使用PR,Nd,Sm,Gd,Tb,Dy,Ho,Er,Tm和Lu的至少一个元素。为了获得足够的磁化,优选的是,PR或Nd中的任何或两种稀土元素R占据50个原子%。\n\n【0090】\n\n当稀土元素R小于8原子%时,可以通过α-Fe相的沉淀来降低矫顽力。另外,当稀土元素R超过18原子%时,目标四方r2Fe.14除了B型化合物之外,还有可能的是R的第二阶段大而且可以减少磁化。因此,稀土元素R优选在整体的8至18原子%的范围内。\n\n【0091】\n\n可以用CO代替Fe来改善磁体特性。当使用淬火合金时,加入CO特别易于在晶界相中沉淀铁磁性化合物,但根据本发明,即使进行0.5原子%以上,也几乎没有形成了大多数铁磁性CO化合物并且实现了胁迫性改善。作为用Fe代替的过渡金属元件,除CO之外,还可以使用诸如Ni,V,Cr,Mn,Cu,Zr,Mb,Mo的过渡金属元素。在整个过渡金属元素中,Fe的比例优选为50原子%以上。如果FE的百分比低于50原子%,则ND2Fe.14这是因为B型化合物的饱和磁化强度变化。\n\n【0092】\n\nb和/或c是四方nd2Fe.14必须稳定地沉淀B型晶体结构(尤其是B是必需的)。添加B和/或C添加的少于3个原子%2T.17由于相沉积物,矫顽力降低,并且消失曲线的大致性显着受损。另外,当B和/或C的添加量超过20原子%时,沉积磁化的较小的第二阶段。\n\n【0093】\n\n可以赋予另一种添加剂元素M以进一步增强粉末的磁各向异性。作为添加剂元素M,适当使用选自Al,Ti,V,Cr,Ni,Ga,Zr,Nb,Mo,Ga,Zr,Nb,Mo,In,Sn,HF,Ta和W的基团中的至少一种元素。。这些添加剂元素M根本不能加入。添加添加时,添加量优选为3原子%或更小。当添加量超过3原子%时,它不是铁磁性而是铁磁性而是减少第二相沉积物和磁化。为了获得磁各向同性磁粉,可以添加添加剂元素M,但可以添加Al,Cu,Ga等以增加本质矫顽力。\n\n【0094】\n\n[实施例和比较例]\n\n在该实施例中,用条带铸造方法冷却含有33重量%的Nd,1.0重量%的Dy,1.0重量%,1.0重量%(重量),1.0重量%(重量)的合金的熔融金属,并用条带铸造法冷却。\n\n【0095】\n\n通过上述研磨方法粉碎上述淬火合金,制备平均粒径(FSSS粒径)的细碎粉末约为2.8至4.0μm。使用由Sympatec制造的粒度分布测量装置(部件号HeloS粒度分析仪)进行粒度分布的测量。该粒度分布测量装置利用激光束从通过颗粒被封堵的激光束被颗粒阻挡时,激光束从通过颗粒时所需的时间通过颗粒。可以确定。\n\n【0096】\n\n接下来,对于这些粉末,用石油溶剂稀释0.3%重量的甲基0.3质量%的甲基,并通过模具压模装置压制成型,20mm横向20mm×粉末成型体。产生10毫米高度的大小。祝福压力约为35 MPa,模塑密度为4.5克/厘米3据说。在压制时,施加垂直于1轴压缩方向的方向上的定向磁场(1.0mA / m)。\n\n【0097】\n\n按下后,将模塑体烧结在氩气氛中(压力:2Pa)。烧结条件如下。\n\n【0098】\n\n加热温度T1(= 1080°C)的温度:3°C / min)\n\n在温度下保持时间t1:6小时\n\n从温度T1到温度T2的冷却速率(= 630°C):1.25°C / min)\n\n在温度下保持时间t2:12小时\n\n温度T2:80°C / min的冷却速率从温度T2:80°C / min)\n\n【0099】\n\n在该实施例中获得的烧结磁体的矫顽力IHC为1232ka / m,并且残余磁通密度Br为1.35吨。\n\n【0100】\n\n接下来,作为比较例,使用在相同条件下制造的粉末成型体,并且在以下热处理条件下进行烧结步骤。\n\n【0101】\n\n加热温度T1(= 1080°C)的温度:3°C / min)\n\n在温度下保持时间t1:6小时\n\n温度T1至室温冷却速度(= 20°C):80°C / min)\n\n尝试处理:温度630°C时12小时\n\n【0102】\n\n由此获得的比较例的烧结磁体的矫顽力为1159ka / m,残留磁通密度Br为1.35t。\n\n【0103】\n\n与实施例和比较例相比,矫顽力是等同的,但在该实施方案中,可以看出,矫顽力得到约6%。\n\n【0104】\n\n对于实施例和比较例的烧结磁体,观察到通过透射电子显微镜(TEM)的观察。图6和7分别是实施例和比较例的TEM照片。 TEM照片中所示的部分1和3显示主相位区域,并且部位2表示晶界。从图1的TEM照片可以看出。如图6所示,非晶层部分(厚度:0.1nm至10nm)存在于与主相接触的侧面上,并且由非晶层部分晶体层部分(厚度:1nm至10nm)存在于夹层区域(晶界相的中心部分)中。另一方面,从图1的TEM照片可以看出。如图7所示,比较例的晶界阶段通常是无定形的。无定形层部分和晶体层部分的厚度是当不包括晶界的三重点并且在三点附近时,分别可以达到1000nm。\n\n【0105】\n\n当分析本实施例的TEM照片时,根据本发明的稀土烧结磁体的任意横截面,非磁性晶体层部分占据晶界中的区域的比率为20%或更高,粒度为1.5μm以上且20μm以下的主阶段的平均值。晶界相的平均厚度为1nm以上且100nm或更小。\n\n【0106】\n\n本说明书中主相的平均晶粒尺寸表示通过JIS H0501中定义的方法测量的值。\n\n【0107】\n\n【发明效果】\n\n根据本发明,通过优化烧结后的热处理,存在于晶界相中的过渡金属在晶界相中结晶为非磁性化合物,并且在其周围形成非晶层。它将完成。这种晶界相设置有稀土磁体,其中改善矫顽力以抑制反向磁域的发生。\n\n[简要描述;简介]\n\n【图1】(a)是表示现有技术中烧结过程的温度曲线的曲线图,(b)是表示本发明的第1方面的烧结过程的温度曲线的图表,(c)是表示本发明的第2方面中烧结过程的温度曲线的图。每个图也显示时间,水平轴表示时间。\n\n【图2】(a)是示意性地示出常规稀土烧结磁体的晶界相和附近的横截面图,(b)通常是本发明的稀土烧结磁体中的晶界相及其附近。6是(c)中所示的横截面图,(c)是示意性地示出了本发明的烧结磁体的老化处理之后的晶界相及其附近的横截面图。\n\n图3.图3是表示本发明的实施方式适用于本发明的单辊型条脚轮的结构的图。\n\n图4.图3是表示在本发明的粗磨方法中进行的氢研磨过程的温度曲线的一例的曲线图。\n\n图5.图3是表示在本发明中适当用于执行粉碎方法的喷射磨机的结构的剖视图。\n\n6.图3是表示本发明的一个例子中烧结磁体的横截面结构结构的TEM照片。\n\n图7.图3是表示比较例中烧结磁体的横截面组织结构的TEM照片。\n\n[标志的说明]\n\n1淬火室\n\n2合金熔融金属\n\n3熔炉\n\n4拍(中间包)\n\n5冷却辊\n\n7淬火凝固合金\n\n8恢复的容器\n\n10喷枪设备\n\n12原料输入机\n\n14个破碎机\n\n16个旋风分类机\n\n18恢复坦克\n\n20原料坦克\n\n22个电机\n\n24供应机器(螺丝FIDER)\n\n26磨床\n\n28个喷嘴口\n\n30原料输入管\n\n32阀门\n\n32A阀门\n\n在32B阀门下\n\n34个柔性管道\n\n36级路由器\n\n38个电机\n\n40个连接管道\n\n42腿\n\n44基地\n\n46重量探测器\n\n48控制单位\n\n64级机器主机\n\n66排气管道\n\n68入口\n\n70个柔性管道\n\n72出口');
INSERT INTO `os_patent_instruction_text` VALUES (12950, 22779, '【0001】\n\n【発明の属する技術分野】\n\n本発明は、磁石用粉末のプレス成形装置および磁石用粉末成形体の製造方法に関し、特に、磁石用粉末にパルス磁界を印加することができるプレス成形装置およびそのようなプレス装置を用いた磁石用粉末成形体の製造方法に関する。\n\n【0002】\n\nなお、本明細書において、「磁石用粉末」とは、焼結磁石の製造に用いられる合金粉末(例えば希土類合金粉末)だけでなく、ボンド磁石の製造に用いられる合金粉末と樹脂粉末との混合粉末などを含むものとする。\n\n【0003】\n\n【従来の技術】\n\n以下、希土類焼結磁石を例に従来の製造方法を説明する。\n\n【0004】\n\n現在、希土類焼結磁石として、希土類·コバルト系磁石と希土類·鉄·ボロン系磁石の二種類が各分野で広く用いられている。なかでも希土類·鉄·ボロン系磁石(以下、「R-T-(M)-B系磁石」と称する。RはYを含む希土類元素、TはFeまたはFeとCoおよび/またはNiとの混合物、Mは添加元素(例えば、Al、Ti、Cu、V、Cr、Ni、Ga、Zr、Nb、Mo、In、Sn、Hf、Ta、Wの少なくとも1種)、Bは\n\nボロンまたはボロンと炭素との混合物である。)は、種々の磁石の中で最も高い最大磁気エネルギー積を示し、価格も比較的安いため、各種電子機器へ積極的に採用されている。\n\n【0005】\n\n希土類合金を用いた焼結磁石は、例えば、以下の工程を経て製造されている。\n\n【0006】\n\n(1)原料金属を高温で溶解し、所定の組成の希土類合金塊を得る。\n\n【0007】\n\n(2)この合金塊を粉砕して、磁石用粉末としての微小な希土類合金粉末を得る。\n\n【0008】\n\n(3)得られた磁石用粉末を磁界中でプレス成形することによって所定の形状の成形体を得る。\n\n【0009】\n\n(4)この成形体を高温(例えば約1000℃以上)で焼結し、焼結磁石を得る。\n\n【0010】\n\n(5)得られた焼結磁石の磁気特性を高めるために、さらに時効処理と呼ばれる熱処理を行う。\n\n【0011】\n\n(6)この焼結磁石の表面を研磨し、寸法と形状を整える。\n\n【0012】\n\n特性に優れた焼結磁石(特に異方性磁石)を製造するためには、成形体を形成する過程において、磁石用粉末を高度に配向させることが望まれる。\n\n【0013】\n\n磁石用粉末の配向度を向上させるために、磁石用粉末の表面に潤滑剤を付与したり、配向磁界の強度を高くするなどの試みがなされている。\n\n【0014】\n\nしかしながら、潤滑剤の付与による配向度の向上には限界があり、十分な配向度を得るに至っていない。また、潤滑剤の量を多くすると、最終的な焼結磁石中に残存する炭素量が増加し、磁気特性が低下するという問題がある。また、印加する静磁界の強度を強くすると、磁界発生用コイルの発熱量が増大し、生産性が低下する。\n\n【0015】\n\nそこで、磁石用粉末の配向度を向上するために、従来の静磁界に代えて、パルス磁界を利用する方法が提案されている(例えば、特許文献1)。\n\n【0016】\n\n【特許文献1】\n\n特開平5-234789号公報\n\n【特許文献2】\n\n特開平7-283057号公報\n\n【0017】\n\n【発明が解決しようとする課題】\n\nしかしながら、パルス磁界を印加すると、渦電流の問題が発生し、生産性の向上を阻害する。\n\n【0018】\n\n一般に、プレス成形中に配向磁界を印加する工程を採用する場合、キャビティ(成形空間)内の磁石用粉末に印加される配向磁界の方向や強度が、ダイスやパンチによって影響されないように、透磁率が1.01未満の非磁性金属材料(例えば、SUS304や高マンガン鋼)を用いて形成されている。これらの非磁性金属材料は、導電性(例えば、SUS304や高マンガン鋼の比抵抗は約70μΩ·cm程度)を有しているので、パルス磁界が印加されると、渦電流が発生する。なお、金型を絶縁性セラミックスで形成することも考えられる(例えば、特許文献2)が、セラミックスは加工性が乏しいので、金型(ダイスやパンチ)の材料として好ましくない。\n\n【0019】\n\nまた、磁石用粉末をプレス装置のキャビティ(成形空間)内に供給する方法としては、フィーダボックス(給粉箱またはフィーダカップ)をキャビティ上にスライドさせ、フィーダボックス内の粉末の自重を利用してキャビティ内に落下させる方法(自然充填法と呼ばれることもある)や、さらにフィーダボックスに設けたアジテータなどによって粉末を加圧しながらキャビティ内に充填する方法(例えば、特開2000-248301号公報参照)が好適に用いられる。\n\n【0020】\n\nフィーダボックスを用いた充填法によれば、粉末をキャビティ内に確実に充填でき、さらに、フィーダボックスの底部等による「摺り切り」によって充填粉末の体積をほぼ一定に制御できるという利点がある。さらに、このような充填方法を用いることによって、磁界配向が可能な程度の低密度充填を実現することができる。\n\n【0021】\n\n上述したフィーダボックス等を用いて、キャビティの体積に応じた磁石用粉末を計量しながら充填する方法(「摺り切り法」ということもある。)を採用する場合、キャビティの上端部開口部を含む面上を磁石用粉末が収容されたフィーダボックスが移動する。すなわち、ダイスの上端部を内包する開口部を有するダイプレートが、その上面がダイスの上端面と実質的に同一面を形成するように配置され、フィーダボックスは、ダイプレートの上面およびダイスの上端面の上を移動する。\n\n【0022】\n\nこのダイプレートも従来は、SUS304(以下、単にSUSということもある。)や高マンガン鋼などの非磁性金属材料を用いて形成されていたため、プレス成形工程においてパルス磁界を利用すると、ダイプレートにも渦電流が発生し、温度が上昇する。ダイプレートの温度が上昇すると、希土類合金粉末が酸化され磁気特性が低下するという問題が発生したり、ひどい場合には、発火する危険すらあるため、ダイプレートの温度が低下するまで、プレス工程を中断する必要が生じ、製造効率の低下を招いていた。\n\n【0023】\n\nまた、渦電流による逆磁界によって、ダイプレートおよび/またはダイスが急激に振動し、騒音を発生することもあり、作業環境を悪化させるという問題もある。\n\n【0024】\n\n本発明は、上記諸点に鑑みてなされたものであり、その主な目的は、パルス磁界を用いて従来よりも効率良く磁石用粉末成形体を製造する方法およびそのような製造方法に好適に用いられるプレス成形装置を提供することにある。\n\n【0025】\n\n【課題を解決するために手段】\n\n本発明のプレス成形装置は、キャビティを形成するための貫通孔を有するダイスと、前記ダイスの少なくとも上端部を内包する開口部を有し、前記ダイスの上端面と実質的に同一面を形成する上面を有するダイプレートであって、絶縁体で形成されており、前記上面が平滑面であるダイプレートと、前記キャビティ内に充填された磁石用粉末をプレスするための上パンチおよび下パンチと、前記キャビティ内の前記磁石用粉末に対してパルス磁界を印加するための磁界発生装置とを有し、そのことによって上記目的が達成される。\n\n【0026】\n\n前記ダイプレートの前記上面のビッカース硬度は450超であることが好ましい。\n\n【0027】\n\n前記ダイプレートは、セラミックまたはガラスから形成されていることが好ましい。ある好ましい実施形態において、前記ダイプレートは結晶化ガラスから形成されている。\n\n【0028】\n\n前記ダイプレートの厚さは10mm以下であることが好ましく、強度の観点から、2mm以上であることが好ましい。\n\n【0029】\n\n前記ダイプレートは、前記ダイスの端部から少なくとも20mm以上の領域を占めていることが好ましい。\n\n【0030】\n\n前記ダイプレートは、前記磁界発生装置が有するコイル部に実質的に接するように設けられていることが好ましい。\n\n【0031】\n\n前記ダイスは円筒形であり、前記ダイプレートの前記開口部は円形であり、前記ダイスと前記ダイプレートとの間のクリアランスは0.2mm以下であることが好ましい。\n\n【0032】\n\n本発明による磁石用粉末成形体の製造方法は、上記のいずれかの磁石用粉末のプレス成形装置を用意する工程と、前記ダイプレート上を移動する給粉装置を用いて、前記磁石用粉末を摺り切り法で、前記キャビティ内に前記磁石用粉末を充填する工程と、前記上パンチおよび下パンチを用いて前記キャビティ内の前記磁石用粉末をプレスする工程と、前記プレス工程において、前記磁石用粉末が所定の密度にプレスされた状態で、前記パルス磁界を印加する工程とを包含し、そのことによって上記目的を達成することができる。\n\n【0033】\n\n前記パルス磁界は、交番減衰磁界であることが好ましい。ある好ましい実施形態において、前記パルス磁界は、0.5msec以上10msec以下の時間で最高磁界強度に到達する。前記パルス磁界の最高磁界強度は、前記キャビティの中心において2T以上10T以下であることが好ましい。\n\n【0034】\n\nある好ましい実施形態において、前記磁石用粉末は希土類合金粉末であって、前記所定の密度は、3.6g/cm3以上4.0g/cm3以下である。\n\n【0035】\n\n【発明の実施の形態】\n\n以下、図面を参照しながら、本発明の実施形態による磁石用粉末のプレス成形装置の構成および動作ならびにそれを用いた磁石用粉末成形体の製造方法を説明する。以下では、磁石用粉末として、希土類合金粉末を用いた例を説明するが、本発明はこれに限られない。\n\n【0036】\n\n実施形態によるプレス成形装置100の構造を模式的に図1に示す。プレス成形装置100は、キャビティを形成するための貫通孔を有するダイス20と、ダイス20の少なくとも上端部を内包する開口部30aを有し、ダイス20の上端面と実質的に同一面を形成するように配置されたダイプレート30と、キャビティ内に充填された磁石用粉末をプレスするための上パンチ10Aおよび下パンチ10Bと、キャビティ内の磁石用粉末に対してパルス磁界を印加するための磁界発生装置40と有する。なお、ダイス20は、ベース54に例えばねじによって固定されている。\n\n【0037】\n\nプレス装置100が有するダイプレート30は、絶縁体で形成されており、上面が平滑面である。ダイプレート30が絶縁体で形成されているので、磁界発生装置40のコイル部40bによってパルス磁界が印加されても、ダイプレート30に渦電流が発生しないので、温度の上昇や、振動の発生が起こらない。ダイプレート30の大きさは、フィーダボックス80内の粉末が接触する部分よりも大きい。\n\n【0038】\n\nダイプレート30はパルス磁界によって渦電流が発生しない程度、あるいは、渦電流が発生してもダイプレート30の温度が上昇しない程度の絶縁性を有していればよく、比抵抗は、1×Ω·cm以上であることが好ましい。勿論、配向磁界の大きさや方向に影響を与えないように透磁率は1.01未満であることが好ましく、1.001未満であることがさらに好ましい。\n\n【0039】\n\nダイプレート30の上面は、平滑面であるので、フィーダボックス80が移動しても、磁\n\n石用粉末である希土類合金粉末が上面に残留し難く、酸化された希土類合金粉末が成形体中に混入することが抑制される。このような利点を得るためには、ダイプレート30の上面の平滑度は、平均粗さRaが1.0以下であることが好ましい。さらに、フィーダボックス80の底部80aなどとの摩擦によって平滑度が低下しないように、ダイプレートの上面のビッカース硬度Hvは450超であることが好ましく、700以上であることがさらに好ましい。\n\n【0040】\n\nまた、ダイプレート30は、その上面の上をフィーダボック80が移動しても変形しない程度の弾性率を有していることが好ましい。\n\n【0041】\n\nこれらの条件を満足する材料として、セラミックやガラスを挙げることができる。特に、結晶化ガラス(例えば、日本電気硝子社製のN-11)を好適に用いることができる。日本電気硝子社製のN-11は、ビッカース硬度Hv:800、ヤング率:90、000N/mm2、比抵抗:12.7Ω·cm(室温)、透磁率:1.001未満の物性値を有している。\n\n【0042】\n\nまた、単一の材料で上記特性を満足できない場合は、材料を複合化あるいは積層して用いても良い。また、所望の硬度や平滑性を実現するために、表面に被膜を形成しても良い。平滑性に優れ、且つ、耐磨耗性に優れる被膜として、ダイヤモンドライクカーボン(DLC)膜を例示することができる。\n\n【0043】\n\nなお、フィーダボックス80は、ダイプレート30上だけでなく、フィーダプレート60上も移動する。フィーダプレート60はダイプレート30と一体に形成しても良いし、パルス磁界の影響を受けない位置に配置される場合には、従来と同様に、SUSなどの金属材料を用いて形成してもよい。\n\n【0044】\n\nダイス20および上パンチ10Aおよび下パンチ10Bは、公知の材料で形成されている。従来技術の説明で述べたように、これらの材料は、透磁率が1.01以下の非磁性材料で形成されることが好ましい。また、場合によっては、絶縁性の材料で形成することもできる(上記特許文献2)。また、パンチの内部に冷却水等を用いて冷却する機構を設けても良い(例えば、特開2000-223336号公報)。さらに、ダイス20と下パンチ10Bとの間にかみこまれた粉末を除去するため、および/またはダイス20と下パンチ10Bとの摺動面を冷却するために、特許第3193912号公報に記載されているように、ダイス20と下パンチ10Bとの間にガスを噴出する機構を設けても良い。噴出するガスは、空気または不活性ガス(例えば窒素ガス)であり、また、このガスに潤滑剤を混合してもよい。\n\n【0045】\n\n次に、図2(a)〜(d)を参照しながら、本発明の実施形態による希土類合金粉末の成形体の製造方法を説明する。ここで、円筒状の成形体14bを製造する例を説明する。\n\n【0046】\n\nダイス20は、コア部20aと円筒部20bとを有している。コア部20aと円筒部20bとの間隙に、キャビティが規定される。上パンチ10Aおよび下パンチ10Bは、このキャビティ内を上下に移動し、キャビティ内に充填された希土類合金粉末をプレスする。ここでは、ダイス20、上パンチ10Aおよび下パンチ10Bとして、高マンガン鋼(比透磁率:1.001未満、比抵抗:約70μΩ·cm)を用いて作製されたものを用いた。円筒部20bの内径は約20mm、コア部の直径は約10mmで、高さが約40mmの円筒形の成形体を作製する。\n\n【0047】\n\nダイプレート30には、上述の結晶化ガラスN-11を用いて形成されたものを用いた。ダイプレート30は円形の開口部30aを有し、ダイス20の円筒部20bの上端部を内\n\n嵌するように配置され、且つ、その上面はダイス20の上端面と実質的に面一となるように配置されている。なお、ダイプレート30の開口部30aとダイス20とのクリアランスは、0.1mm(少なくとも0.2mm以下)に設定してある。これは、フィーダボックス80を用いて摺り切り法によって、希土類合金粉末をキャビティ内に充填する過程で、希土類合金粉末がこのクリアランス部に侵入しないためである。ダイス20の外形を円筒形にし、開口部30aを円形にすると、ダイス20とダイプレート30とが一点のみで接触するようにできるので、クリアランスを小さく設定することができる。\n\n【0048】\n\nなお、必要に応じて、このクリアランスに侵入した希土類合金粉末をガス圧等を用いて除去するための機構を設けてもてもよい(例えば、上記特許第3193912号公報参照)。\n\n【0049】\n\nまた、磁界発生装置40で発生した熱をダイプレート30に伝えないために、磁界発生装置40の支持板40aの上面とダイプレート30の下面との間に1μm以上のクリアランスを設けることが好ましい。\n\n【0050】\n\n希土類合金粉末12としては、R-Fe-B系希土類合金が好適に用いられる。希土類合金の組成および製造方法は、例えば、米国特許第4,770,723号および米国特許第4,792,368号に記載されている。R-Fe-B系希土類合金の典型的な組成では、RとしてNdまたはPrが主に用いられ、Feは部分的に遷移元素(例えばCo)に部分的に置換されてもよく、BはCによって置換されてもよい。ここでは、急冷法で作製したNd-Fe-B系凝固合金(密度7.5g/cm3)をジェットミルで粉砕することによって得られた平均粒径(FSSS粒径)1.5μm〜8μmの範囲内の粉末を用いる。合金粉末の表面は、例えば、ステアリン酸亜鉛などの潤滑剤で被覆しておくことが好ましい。\n\n【0051】\n\nまず、図2(a)に示すように、希土類合金粉末12が収容されたフィーダボックス80をダイプレート30の上面上を移動させ、図2(b)に示すように、キャビティを覆うように配置する。この後、希土類合金粉末12の自重を利用し、あるいは、フィーダボックス80に設けられたアジテータ(不図示)を用いて加圧しながら、希土類合金粉末12をキャビティ内に充填する。摺り切り法を用いると、キャビティ内に適当な見掛け密度(例えば2.0g/cm3〜2.5g/cm3)で合金粉末を充填することができる。\n\n【0052】\n\n続いて、上パンチ10Aおよび/または下パンチ10Bを昇降させることによって、キャビティ内の希土類合金粉末を一軸プレスする。典型的には上パンチ10Aを下降させるが、上パンチ10Aを下降させるとともに下パンチ10Bを上昇させてもよい。\n\n【0053】\n\nここで、希土類合金粉末(最終的な成形体が得られる前の合金粉末を「仮成形体」ということもある。仮成形体はキャビティから取り出した状態で形状を維持できないものも含む。)14aが所定の密度に到達した時点で、磁界発生装置40によってパルス磁界を印加する。希土類合金粉末14aの密度が低い時点でパルス磁界を印加しても配向の効果が低い。希土類合金粉末14aの密度が3.6g/cm3以上4.0g/cm3以下の時点、パルス磁界を印加する。\n\n【0054】\n\n希土類合金粉末の密度が所定の範囲にある時点でパルス磁界を印加するという動作を確実に実行するためには、上パンチ10Aおよび/または下パンチ10Bのストロークを制御し、仮成形体の密度が所定密度に到達した時点で一旦上パンチ10Aおよび/または下パンチ10Bのストロークを停止することが好ましい。この停止期間にパルス磁界を印加し、その後、最終的な成形体を得るためのプレス工程を再開すればよい。\n\n【0055】\n\nパルス磁界としては、0.5msec以上10msec以下の時間で最高磁界強度に到達する磁界を用いることが好ましい。例えば、図3(a)に示すようなプロファイルを有する交番減衰磁界(例えば、最高磁界強度:5T、減衰率80%、パルス幅:0.002秒)を好適に用いることができる。パルス磁界を用いると短時間で配向することが可能で、交番減衰磁界を用いることによって成形体の残磁を低減することができる。パルス磁界の強度は、用いる材料の保磁力に依存するが、2T以上10T以下の範囲にあることが好ましい。なお、交番減衰磁界に代えて、図3(b)に示すような単調減衰磁界を用いてもよい。また、パルスピーク強度が変化しない交番磁界を用いてもよい。また、パルス磁界は複数回印加してもよいし、パルス磁界の印加後に静磁界を印加してもよい。なお、減衰磁界を用いない場合は、脱磁磁界をさらに印加することが好ましい。成形体の残磁が大きいと、成形体の表面に粉末が付着したり、あるいは成形体同士が密着したりするので、ハンドリングしにくくなる。\n\n【0056】\n\n本実施形態のプレス装置100は、結晶化ガラスから形成されたダイプレート30を有しているので、パルス磁界を印加しても、渦電流を発生せず、温度が上昇しない。非接触温度計を用いて、従来のSUS製ダイプレートを用いた場合の温度上昇の違いを説明する。\n\n【0057】\n\nパルス磁界(最高磁界強度:5T、減衰率80%、パルス幅:0.002秒)を3回連続印加し、その後1分間休止するというサイクルを繰り返しながら、ダイプレート30の表面温度の変化を調べた(室温23℃)。従来のSUS製を用いた場合、1サイクル目から温度上昇が認められ、5サイクルで約10℃上昇し、10サイクル後には45℃付近まで上昇した。これに対し、結晶化ガラスから形成されたダイプレートを用いた場合には、僅かな温度上昇(ダイスの温度上昇に起因すると思われる)が認められたが、10サイクル後も約27℃であり、実質的に問題のないレベルであった。\n\n【0058】\n\nこのように、本発明によるプレス成形装置100を用いると、パルス磁界を印加しても、希土類合金粉末が接触する部分のうち渦電流が発生する部分の面積を小さくすることができるので、温度上昇を抑制でき、成形サイクルタイムを短くすることができる。ダイプレート30は、ダイス20の端部から少なくとも20mm以上の領域を占めていることが好ましい。\n\n【0059】\n\nなお、所定の強度で所定の方向(ここではプレス方向に平行)のパルス磁界を希土類合金粉末に均一に印加するためには、図2(c)に示したように、希土類合金粉末14aは磁界発生装置40のコイル部40bの中心に位置することが好ましい。一方、下パンチ10Bのストロークは装置によって固定されている。従って、種々の大きさの成形体をプレス成形するためのマージンを確保するためには、ダイプレート30の厚さは薄いことが好ましく、10mm以下であることが好ましい。但し、あまり薄いと強度が低下するので厚さは2mm以上あることが好ましい。また、あまり薄いとコイル部40bで発生した熱を十分に絶縁(断熱)できず、粉末に熱が伝達されることがあるので、ダイプレート30の厚さは2mm以上あることが好ましい。\n\n【0060】\n\n磁界発生装置40は、一般に、図1に示したように、コイル部40bを支持するための支持板40aを有している。この支持板40aは樹脂材料で形成されていることが多いが、この支持板40aを上述した結晶化ガラスなどを用いて形成することによって、支持板40aをダイプレート30として用いることができる。このような構成を採用すると、ダイプレート30が磁界発生装置40のコイル部40bと実質的に接するように配置されるので、成形マージンを大きくできる利点が得られる。なお、コイル部40bにおける発熱が激しい場合には、ダイプレート30とコイル部40bとの間に断熱材を介在させてもよい。\n\n【0061】\n\nパルス磁界を印加した後、最終的な成形体の密度が、例えば4.0g/cm3〜4.5g/cm3となるように再度加圧し、成形体14bを得る。図2(d)に示すように、例えば、ダイス20を降下させることによって、成形体14bを取り出す。\n\n【0062】\n\n得られた成形体14bは、公知の方法で焼結される。Nd-Fe-B系焼結合金は、例えば、成形体14bをAr雰囲気中で約1050℃で5.5時間の焼結処理を行い、その後Ar雰囲気中で約500℃で3時間の時効処理を行うことによって得られる。\n\n【0063】\n\n上記の実施形態では、本発明を希土類合金粉末のプレス成形に適用した例を示したが、希土類合金粉末と樹脂粉末とを混合したボンド磁石用粉末のプレス成形にも適用することができる。\n\n【0064】\n\n【発明の効果】\n\n上述したように、本発明によると、パルス磁界を用いて従来よりも効率良く磁石用粉末成形体を製造する方法およびそのような製造方法に好適に用いられるプレス成形装置が提供される。\n\n【図面の簡単な説明】\n\n【図1】本発明の実施形態によるプレス成形装置100の構造を模式的に示す斜視図である。\n\n【図2】(a)〜(d)は、本発明の実施形態による希土類磁石用粉末成形体の製造方法における工程を説明するための模式的な断面図である。\n\n【図3】(a)および(b)は、本発明の実施形態による希土類磁石用粉末成形体の製造方法において好適に用いられるパルス磁界のプロファイルを示す図である。\n\n【符号の説明】\n\n10A  上パンチ\n\n10B  下パンチ\n\n20  ダイス\n\n20a  コア部\n\n20b  円筒部\n\n30  ダイプレート\n\n30a  ダイプレートの開口部\n\n40  磁界発生装置\n\n40a  支持板\n\n40b  コイル部\n\n52  支柱\n\n54  ベースプレート\n\n60  フィーダプレート\n\n80  フィーダボックス\n\n80a  フィーダボックスの底部', '【0001】\n\n技术领域\n\n本发明涉及一种用于磁体粉末的压制成形装置及其用于磁体的粉末成型体的方法,特别是一种能够将脉冲磁场施加到磁体粉末和磁体的压制成形装置这种压制装置该方法涉及制造粉末成型体的方法。\n\n【0002】\n\n在本说明书中,“磁体粉末”不仅是用于制造烧结磁体的合金粉末(例如,稀土合金粉末),而且还用于生产粘合磁体的合金粉末和树脂粉末粉末的混合等包括。\n\n【0003】\n\n发明背景\n\n在下文中,将通过稀土烧结磁体来描述常规制造方法。\n\n【0004】\n\n目前,两种类型的稀土,基于钴基磁铁和稀土 - 基铁和硼基磁体被广泛用作稀土烧结磁体。其中,稀土,铁,硼基磁体(下文中称为“RT-(M)-B基磁体”。R是含有Y,T的稀土元素,是Fe或Fe和Co的混合物/或Ni,m是添加元素(例如,Al,Ti,Cu,V,Cr,Ni,Ga,Zr,Nb,Mo,In,Sn,Hf,Ta,W,B),B是\n\n它是硼或硼和碳的混合物。由于价格是各种磁铁中最大的最大磁能产品,价格相对较低,因此它们被积极采用各种电子设备。\n\n【0005】\n\n使用稀土合金的烧结磁铁例如通过以下步骤制造。\n\n【0006】\n\n(1)将原料金属溶解在高温下,得到预定组合物的稀土合金质量。\n\n【0007】\n\n(2)该合金质量研磨,得到一定的稀土合金粉末作为磁体的粉末。\n\n【0008】\n\n(3)通过将所获得的磁场压制在磁场中获得具有预定形状的模制体。\n\n【0009】\n\n(4)模塑体在高温(例如约1000℃以上)处烧结以获得烧结磁体。\n\n【0010】\n\n(5)进一步进行称为老化过程的热处理以增加所得烧结磁体的磁性。\n\n【0011】\n\n(6)抛光烧结磁体的表面,调节尺寸和形状。\n\n【0012】\n\n为了产生特性优异的烧结磁体(尤其是各向异性磁体),希望在形成模塑主体的过程中高度定向磁体粉末。\n\n【0013】\n\n为了提高磁体的粉末的比对程度,试图将润滑剂赋予粉末表面的润滑剂,或者增加取向磁场的强度。\n\n【0014】\n\n然而,由于润滑剂的施用而改善取向程度的限制,并且尚未达到足够的取向。另外,如果润滑剂的量增加,则存在剩余的最终烧结磁体的碳量增加的问题,并且磁特性降低。另外,当加强施加的静磁场的强度时,对磁场生成线圈的热量增加,并且生产率降低。\n\n【0015】\n\n因此,为了提高磁体的粉末的取向程度,提出了一种使用脉冲磁场的方法而不是传统的静磁场(例如,专利文献1)。\n\n【0016】\n\n专利文献1\n\n未审查 - 日本专利No.5-234789\n\n专利文献2.\n\n日本专利申请公开号7-283057\n\n【0017】\n\n本发明要解决的问题\n\n然而,施加脉冲磁场会导致涡流问题以防止提高生产率。\n\n【0018】\n\n通常,当在压模期间施加施加定向磁场的步骤时,渗透率使得施加到腔体(模塑空间)中施加到磁体的定向磁场的方向和强度不受骰子或冲头的影响。使用具有小于1.01的非磁性金属材料(例如,SUS304和高锰钢)形成。由于这些非磁性金属材料具有导电(例如,SUS304和高锰钢的比电阻约为70μΩ·cm),因此当施加脉冲磁场时产生涡电流。还可以想到,形成具有绝缘陶瓷(例如,专利文献2)的模具,因为陶瓷是可加工性差,因此作为模具(模具或冲头)的材料是不可取的。\n\n【0019】\n\n另外,作为向压制装置的腔(模制空间)供给瓷器的粉末的方法,馈线(进料箱或进料杯)滑到腔体并使用进料器中的粉末的重量盒通过通过在进料箱或饲养者箱中提供的搅拌器的搅拌器或者一种方法通过加压粉末来加压粉末,通过加压粉末,通过加压粉末来加压粉末,通过在进料箱中提供的搅拌器或提供一种方法进一步压制粉末(参见JP 2000-248301)。\n\n【0020】\n\n根据使用进料箱的填充方法,粉末可以可靠地填充在腔体中,进一步地,有一个优点是,由于馈线箱的底部,填充粉末的体积可以基本恒定的“滑动”等等。此外,通过使用这种填充方法,可以实现可以是磁场取向的低密度填充。\n\n【0021】\n\n当使用上述馈线等时,使用根据腔体的体积(例如“滑动方法”)填充磁体粉末的方法,包括腔的上端开口馈线容纳磁体的粉末在表面上移动。也就是说,具有含有模具的上端的开口的模板被布置成使得上表面与模具的上端表面基本相同,并且馈线盒高于上表面和模具的骰子盘子。在末端脸上移动。\n\n【0022】\n\n这种饮食通常也传统上,SUS304(以下有时称为SUS)和非磁性金属材料如高锰钢,因此当在压制成形过程中使用脉冲磁场时,脉冲磁场用于死。涡流也发生并且温度升高。随着模板的温度升高,存在稀土合金粉末被氧化并且磁性可能劣化,如果它易碎,则进行压制过程,直到模板的温度降低。它是必要的中断,导致制造效率降低。\n\n【0023】\n\n而且,由于涡流引起的逆磁场,模具板和/或骰子振动迅速振动,并且产生噪声,并且还存在工作环境恶化的问题。\n\n【0024】\n\n鉴于上述几点进行了本发明,并且本发明的主要目的是适用于使用脉冲磁场的常规更有效地制造磁体的粉末成型体,以及它是这样的制造方法提供压制成形装置。\n\n【0025】\n\n[解决问题的手段]\n\n本发明的压制成形装置具有具有用于形成空腔的通孔的模具,以及包含模具的至少一个上端的开口,并且与骰子的上端表面具有基本相同的表面。模具具有上表面并且由绝缘体形成的板,上表面是膜片,以及用于压制填​​充在腔体中的磁体的冲头和下冲头。通过具有磁场发生器已经实现了上述目的用于将脉冲磁场施加到腔内的磁性马铃薯粉末。\n\n【0026】\n\n优选地,模板的上表面的维氏硬度大于450。\n\n【0027】\n\n模板优选由陶瓷或玻璃形成。在一个优选实施例中,模板由结晶玻璃形成。\n\n【0028】\n\n模具板的厚度优选为10mm或更小,并且从强度的观点来看,优选为2mm或更大。\n\n【0029】\n\n模板优选地从模具的末端占据至少20mm的面积。\n\n【0030】\n\n优选地,模具板基本上与磁场发生器的线圈部分接触。\n\n【0031】\n\n骰子是圆柱形的,并且模板的开口是圆形的,并且模具和模板之间的间隙优选为0.2mm或更小。\n\n【0032】\n\n根据本发明的磁体的制造方法是制备用于任何上述磁体粉末的压制成型装置的步骤和在模板上移动的粉末装置,以及磁性石粉在填充腔中的磁性土豆粉末的步骤中,使用上冲头和下冲头将磁性石粉压在腔中,以及上述磁体以预定密度压制的步骤包括施加脉冲磁场的步骤,该步骤可以实现上述物体。\n\n【0033】\n\n优选地,脉冲磁场是交替的衰减磁场。在一个优选实施例中,脉冲磁场在0.5毫秒或更高的时间和10毫秒或更小的时间达到最高磁场强度。脉冲磁场的最大磁场强度优选在腔中心处为2T或更大,10t或更小。\n\n【0034】\n\n在一个优选的实施方案中,磁性马铃薯粉是稀土合金粉末,预定密度为3.6g / cm3超过4.0g / cm3它在下面。\n\n【0035】\n\n发明内容\n\n在下文中,参考附图,将描述根据本发明的实施方案的用于磁体的粉末模制设备的方法及使用它的制造粉末成型体的方法。在下文中,使用稀土合金粉末的示例描述为磁体的粉末,但是本发明不限于此。\n\n【0036】\n\n根据该实施例的压制成形装置100的结构示意性地示于图2中。压模装置100具有芯片20,该模具20具有通孔,用于形成腔体的通孔和容纳芯片20的上端的开口30a,并且形成与模具20的上端表面基本相同的表面是磁场的用于将脉冲磁场施加到腔中的磁体中的粉末,上冲头10a和下冲头10b,用于按压布置在腔体的模板30和下冲头10b,以及腔室中的磁体粉末具有发电机40。模具20通过例如螺钉固定到基部54。\n\n【0037】\n\n压制装置100的模板30由绝缘体形成,上表面是光滑的表面。由于模板30由绝缘体形成,所以即使磁场产生装置40的线圈部分40b施加脉冲磁场,也没有在模板30中发生涡流,因此温度升高和发生发生振动。它不会发生。模板30的尺寸大于馈电箱80触点中的粉末的部分。\n\n【0038】\n\n模板30可具有绝缘体,其不会导致由于脉冲磁场引起的涡流,或者即使发生涡流,并且模板30的温度不会增加,则电阻为1×Ω厘米或更优选。当然,渗透率优选小于1.01,以免影响定向磁场的大小和方向,更优选小于1.001。\n\n【0039】\n\n由于模板30的上表面是光滑的表面,因此即使馈线盒80移动,\n\n稀土合金粉末是石粉的稀土合金粉末,难以保持在上表面上,并且抑制了将氧化稀土合金粉末混合到模制体中。为了获得这样的优点,模板30的上表面的平滑度优选地具有1.0或更小的平均粗糙度Ra。此外,模具板的上表面上的维氏硬度HV大于450,使得由于进料箱80的底部80a的摩擦而不会降低平滑度,更优选为700或更高。\n\n【0040】\n\n此外,优选的是,由于进料箱80在其上表面上移动,因此模具板30具有诸如变形的弹性模量。\n\n【0041】\n\n可以提及陶瓷和玻璃作为满足这些条件的材料。特别地,可以适当地使用结晶玻璃(例如,由Nippon电玻璃制造的N-11)。 N-11由Nippon Electric Girls制造,维克斯硬度HV:800,杨氏循环:90,000 N / mm2,染料特异性电阻:12.7Ω·cm(室温),渗透率小于1.001。\n\n【0042】\n\n另外,当对单个材料不能满足上述特性时,可以组合或层压材料。此外,为了实现期望的硬度和平滑度,可以在表面上形成膜。菱形碳(DLC)膜可以例示为光滑度优异,耐磨性优异的涂层。\n\n【0043】\n\n进料箱80不仅移动在模板30上,还可以在馈送板60上移动。进料板60可以与模板30一体地形成,或者当设置在脉冲磁场不受影响的位置时,可以使用诸如SUS和常规的金属材料形成馈线板60。好。\n\n【0044】\n\n骰子20和上冲头10a和下冲头10b由已知材料形成。如现有技术描述所述,这些材料优选由渗透性为1.01或更小的非磁性材料形成。在一些情况下,它可以由绝缘材料(上述上述)形成。此外,可以使用冲头内的冷却水等提供机构(例如,JP-A-2000-223336)。此外,在专利No.3193912中描述以除去在模具20和下冲头10b之间获得的粉末和/或冷却/或骰子20的滑动表面和下冲头10b。可以提供给弹出模具20和下冲头10b之间的气体。待喷射的气体是空气或惰性气体(例如氮气),并且可以将润滑剂与这种气体混合。\n\n【0045】\n\n接下来,参考图1和图2.如图2(a)至2(d)所示,将描述根据本发明的实施例的制造稀土合金粉末的模制体的方法。这里,将描述制造圆柱形模制体14b的示例。\n\n【0046】\n\n模具20具有芯部20a和圆柱形部分20b。腔在芯部20a和圆柱形部分20b之间的间隙中限定。上冲头10a和下冲头10b向上和向下移动腔内的内部,然后按填充在腔体中的稀土合金粉末。这里,作为模具20,使用高锰钢制备的上冲头10a和下冲头10b(1.001的相对渗透率,特异性电阻:约70μΩ·cm)。圆柱形部分20b的内径约为20mm,芯部的直径约为10mm,并且产生高度为约40mm的圆柱形模制体。\n\n【0047】\n\n使用上述结晶玻璃N-11形成模板30。衍射30具有圆形开口30a,并且模具20的圆柱形部分20b的上端\n\n它布置成适合,并且其上表面基本上大于模具20的上端面。模板30和模具20的开口30a之间的间隙设定为0.1mm(至少0.2mm或更小)。这是因为稀土合金粉末在通过馈线通过衬垫方法填充腔体的过程中不会渗透到该间隙部分中。当模具20的外形是圆柱形的并且开口30a是圆形的,模具20和模板30可以仅与一个点接触,使得间隙可以设置较小。\n\n【0048】\n\n另外,根据需要,使用气体压力等提供用于去除侵入该间隙的稀土合金粉末的机制(例如,参见上述专利3193912)。\n\n【0049】\n\n此外,由于磁场发生器40产生的热量不传递到管芯板30,因此优选的是在磁场发生器40的支撑板40a的上表面之间提供1μm或更大的间隙。模板30的下表面。\n\n【0050】\n\n作为稀土合金粉末12,适当使用R-Fe-B基稀土合金。稀土合金的组合物和制造方法描述于例如美国专利No.4,522,517中。No.4,770,723和4,792,368。在R-Fe-B基稀土合金的典型组合物中,Nd或Pr主要用作R,并且可以部分地由过渡元件(例如CO)部分地替换,B是C.它可以被替换。这里,通过淬火法制备的基于ND-Fe-B的聚集合金(密度为7.5g / cm)3通过在喷射磨机中研磨的1.5μm至8μm的粉末。合金粉末的表面优选用诸如硬脂酸锌如锌的润滑剂涂覆。\n\n【0051】\n\n首先,如图2A所示,供料箱80,其中所述稀土类合金粉末12容纳上移动模头板30的上表面和设置成覆盖空腔,如图2(B)。做。此后,在使用稀土类合金粉末12的重量或使用搅拌器(未示出)在供料箱80中的稀土类合金粉末12的重量被填充在腔体中。在空腔中使用slearing方法,适当的表观密度(例如为2.0g /厘米3〜2.5克/厘米3可填充合金粉末。\n\n【0052】\n\n随后,通过升高和降低上冲头10A和/或所述下冲头10B,在空腔中的稀土类合金粉末单轴压制。典型地,该上冲头10A可以被降低,但上冲头10A可以被降低和下冲头10B可以增加。\n\n【0053】\n\n这里,稀土合金粉(获得最终成型体之前合金粉末也被称为“暂时形状”。临时模具主体还包括一个不能与空腔保持的形状。)图14A当预定密度在达到时,磁场发生器40施加脉冲磁场。当当稀土合金粉末14a的密度低施加脉冲磁场时,取向的效果低。稀土合金粉末14a的密度为3.6克/厘米3超过4.0g / cm3脉冲磁场施加的下方。\n\n【0054】\n\n为了可靠地执行在当稀土合金粉末的密度是在预定范围内的时间施加的脉冲磁场的动作,使上冲头10a的行程和/或所述下冲头10b的控制,而临时形式的密度是优选的是,停止上冲头10A和/或所述下冲头10B达到预定的密度时的行程。脉冲磁场可在此停止期间被施加,然后压制步骤可以恢复以获得最终成型体。\n\n【0055】\n\n作为脉冲磁场,最好是使用一个磁场,该磁场到达0.5毫秒或者更长时间和10毫秒或更少的时间的最高的磁场强度。例如,具有如图轮廓的交变衰减磁场3A(例如,高的磁场强度:5T,80%的衰减率,脉冲宽度:0.002秒)。可以适当地使用。通过使用脉冲磁场,能够在很短的时间来使,并且可以通过使用交变衰减磁场被减小成形体的剩磁磁化。脉冲磁场的强度取决于所使用的材料的矫顽力,但优选为2T的范围以上,10T以下。相反的交变衰减磁场,可以使用如在图3B中所示的单调阻尼字段。可替换地,不可使用的交变磁场,其脉冲峰值强度的变化。此外,脉冲磁场可以施加多次,或静态磁场可在脉冲磁场的施加之后施加。当不使用阻尼磁场中,优选进一步施加消磁的磁场。如果剩磁成型体的大时,粉末附着于模制体的表面上,或模制体被带入与彼此紧密接触,所以它变得难以处理。\n\n【0056】\n\n由于本实施例的压装置100具有结晶化玻璃构成的模具板30,即使一个脉冲施加磁场时,不产生涡流,并且温度不增加。使用非接触式温度计,在使用常规的SUS模具板的情况下,温度上升的不同点进行说明。\n\n【0057】\n\n脉冲磁场(高磁场强度:5T,衰减率80%,脉冲宽度:0.002秒)的施加三次,然后同时重复暂停的循环1分钟,检查模具板30的表面温度的变化(室温23℃)。当使用常规的SUS,从第一周期观察到温度上升,在5个周期升高约10℃,上升至约45℃10个循环之后。在另一方面,当结晶化玻璃构成的模具板时,微小的温度上升(被认为是由于模具的温度上升),观察到,但它是约27℃10个循环后,这是一个基本上难以置信的水平。\n\n【0058】\n\n如上所述,当根据本发明的冲压成形装置100的使用,即使一个脉冲磁场被施加,其中,所述部分之中产生的涡电流的部分的区域,其中所述稀土类合金粉末是在接触时,温度上升增加。可被抑制,并且,成型周期时间可以缩短。模具板30优选地占据从模具20的端部至少20mm以上的区域。\n\n【0059】\n\n为了在预定的方向均匀地施加脉冲磁场(在此,平行于压方向)在预定方向(在此,如示于图2(C)中,稀土合金粉末14A是磁场它优选为在所述发电机40的线圈部40b的中心。在另一方面,下冲头10b的行程由装置固定的。因此,为了确保一个余量用于按压各种尺寸的模制体,模具板30的厚度优选是薄的,优选为10毫米或更小。然而,该厚度优选为2mm以上,则强度越低,强度较低。此外,当过薄时,由线圈部40b所产生的热量不能充分地绝缘(绝缘),并且热被传递到粉末,从而在模具板30的厚度优选为2mm以上。\n\n【0060】\n\n磁场发生器40通常具有用于支撑所述线圈部40b如图支撑板40a。尽管支撑板40a由树脂材料的通常形成,支撑板40a可通过使用上述结晶化玻璃或类似物形成支撑板40a被用作模板30。当这样的结构的情况下,占空30被设置基本上与磁场发生器40的线圈部40b接触,从而能够获得的优点。当热量产生在线圈部40b是严重,隔热材料可以在模具板30和线圈部40b之间。\n\n【0061】\n\n施加脉冲磁场后,最终成型体的密度为,例如,4.0克/厘米3约为4.5克/厘米3再次更换成型,得到成型体14b。如图2D中所示,例如,模制体14b通过降低模具20取出。\n\n【0062】\n\n所得成型体14b由公知的方法进行烧结。例如,所述的Nd-Fe-B基烧结合金进行在Ar气氛中在大约1050℃下进行约1050℃烧结处理,然后用于在3小时执行在约500℃下的时效处理AR氛围。它可以通过获得。\n\n【0063】\n\n另外,在上述实施方式中,对将本发明适用于稀土类合金粉末的压制成型的例子,它也可以适用于按与稀土合金粉末和树脂粉末混合的粘结磁体粉末的成型。\n\n【0064】\n\n【发明效果】\n\n如上所述,根据本发明,提供了一种用于制造压粉成型体的磁体更有效地使用脉冲磁场和适用于这种制造方法的冲压成形装置的方法。\n\n[简要描述;简介]\n\n【图1】它是通常示出了按本发明的该实施例成形装置100的结构的立体图。\n\n【图2】(A) - (d)是用于演示过程中的粉末成形体的制造方法,用于根据本发明的一个实施方式的稀土类磁铁的示意性横截面图。\n\n图3.(A)和(B)是示出在制造粉末成形体为根据本发明的一个实施方式的稀土类磁铁的方法适当地使用脉冲磁场的分布。\n\n[标志的说明]\n\n10A冲\n\n10B下冲\n\n20骰子\n\n20A核心俱乐部\n\n20B圆筒部\n\n30个模具板\n\n30A迪板开口\n\n40磁场发生器\n\n40A支持董事会\n\n40B线圈部\n\n52个职位\n\n54底板\n\n60进给器板\n\n80送电箱\n\n底部80A输送盒');
INSERT INTO `os_patent_instruction_text` VALUES (12951, 22780, '【0001】\n\n【発明の属する技術分野】\n\nこの発明は磁界発生装置に関し、より特定的には、指などの身体の一部分や小動物、食物の中身を検査するための小型のMRI装置等に用いられる、永久磁石式磁界発生装置に関する。\n\n【0002】\n\n【従来の技術】\n\n最近、MRI装置等に用いられる永久磁石式の磁界発生装置として、0.8T以上といった高磁界を発生させる磁界発生装置が使用されつつある。しかし、永久磁石は常に磁界を発生させるため、磁界発生装置の中心磁界強度が向上するほど漏洩磁界による事故等が心配される。\n\n【0003】\n\n本件出願人は、この種の磁界発生装置の一例を提案している(特許文献1参照。)。\n\nこの従来技術では、磁石として、その主面に対して平行または垂直な磁化方向を有する磁石が、生産性を向上させる点からも使用されている。しかし、この場合、磁界発生装置の一部において、磁化方向が90度変化してしまう等、磁化方向が急に変化することによって漏洩磁界が発生してしまい、たとえばハルバッハ型の磁界発生装置のように漏洩磁界を小さくすることができず、当該磁界発生装置を医療機器や測定機器としてのMRI装置に用いた場合、使用上·作業上の問題がある。\n\n【0004】\n\n【特許文献1】\n\n特開2001-70280号公報\n\n【0005】\n\n【発明が解決しようとする課題】\n\nこのような磁界発生装置をMRI装置に用いる場合には、装置本体(磁気回路)の中心から1m以内の漏洩磁界が0.5mTであることが要求される。\n\nそのための一番簡単な方法は、装置本体自体を鉄やパーマロイ等の高透磁率のシールド部材で覆うことである。\n\nしかし、良好な中心磁界強度が得られかつ漏洩磁界を十分に抑制するためには、シールド部材の厚みやシールド部材と装置本体との間隔が重要となる。シールド部材の厚みを大きくすればシールド効果は大きくなるが、その分磁界発生装置全体の重量が大きくなってしまい、床の強度の関係から設置場所がより限定されてしまう。\n\n【0006】\n\nそれゆえに、この発明の主たる目的は、装置自体の重量化を抑制しつつ、漏洩磁界を抑制し中心磁界強度を向上できる、磁界発生装置を提供することである。\n\n【0007】\n\n【課題を解決するための手段】\n\n【0009】\n\n  上述の目的を達成するために、請求項1に記載の磁界発生装置は、磁界強度が0.8T以上2.0T以下の磁界発生空間をその内周側に有するように複数の永久磁石を用いて環状に構成される装置本体、装置本体の外周に永久磁石表面から離して設けられる飽和磁化1.5T以上のシールド部材、および永久磁石とシールド部材との間に設けられる飽和磁化が0.2T以下の介挿部材を備える。\n\n【0010】\n\n請求項2に記載の磁界発生装置は、請求項1に記載の磁界発生装置において、永久磁石はその主面に対して平行または垂直に磁化されていることを特徴とする。\n\n請求項3に記載の磁界発生装置は、請求項1または2に記載の磁界発生装置において、永久磁石はR-Fe-B系磁石であることを特徴とする。\n\n【0014】\n\n請求項1に記載の磁界発生装置のように、装置本体の磁石とシールド部材との間に飽和磁化が0.2T以下の部材を設ければ、装置本体とシールド部材とによって磁束が短絡することを抑制でき、漏洩磁界を抑制できる。\n\nシールド部材として飽和磁化1.5T以上の磁性部材を用いることによって、漏洩磁界をより効果的に抑制できる。また、このような磁性部材を用いれば、磁路を実質的に太くする効果も大きくなるので、磁気飽和を抑制でき中心磁界強度をより効果的に向上できる。\n\n装置本体の磁界発生空間に0.8T以上2.0T以下の磁界を発生させるとそれに応じて漏洩磁界も大きくなるが、請求項1に記載の磁界発生装置では、このような強磁界を発生させる場合であっても漏洩磁界を効果的に抑制できる。\n\n【0015】\n\n装置本体に用いられる各磁石として、その主面に対して平行または垂直に磁化されている磁石を用いれば、装置本体(磁気回路)において磁束の向きが急激に変化する部分が生じ、漏洩磁界が発生する。しかし、請求項2に記載の磁界発生装置では、所定の位置に所定のシールド部材を設けることによって、このような漏洩磁界を効果的に抑制できる。\n\n【0016】\n\n用いられる磁石がR-Fe-B系磁石である場合には、強力な磁界が発生しそれに応じて漏洩磁界も大きくなるが、請求項3に記載の磁界発生装置では、このような場合であっても漏洩磁界を効果的に抑制できる。\n\n【0017】\n\n【発明の実施の形態】\n\n以下、図面を参照して、この発明の実施形態について説明する。\n\n図1〜図3を参照して、この発明の一実施形態の磁界発生装置10は装置本体12を含む。装置本体12は、直方体形状または略直方体形状の複数の永久磁石を用いて略直方体状に形成され、たとえば470mm×440mm×423mmの外径寸法を有する。装置本体12に用いられる各永久磁石は、その(永久磁石の)平面状の主面に対して略平行または略垂直に磁化されており、たとえば異方性R-Fe-B系焼結磁石(RはYを含む希土類元素)からなる。\n\n【0018】\n\n装置本体12は一対の直方体状の永久磁石14aおよび14bを含む。\n\n永久磁石14aの周囲(側面)には、直方体状の永久磁石16a,18aおよび略直方体状の永久磁石20aおよび22aが設けられ、永久磁石14aは永久磁石16a,18a,20aおよび22aと接し磁気的に結合される。このとき、永久磁石16aと18aとは永久磁石14aを挟んで対向配置され、さらに、永久磁石20aと22aとは永久磁石14a,16aおよび18aを挟んで対向配置される。\n\n【0019】\n\n同様に、永久磁石14bの周囲(側面)には、直方体状の永久磁石16b,18bおよび略直方体状の永久磁石20bおよび22bが設けられ、永久磁石14bは永久磁石16b,18b,20bおよび22bと接し磁気的に結合される。このとき、永久磁石16bと18bとは永久磁石14bを挟んで対向配置され、さらに、永久磁石20bと22bとは永久磁石14b,16bおよび18bを挟んで対向配置される。永久磁石18bは、図3(b)に示すように永久磁石16bと対をなすように、図1でいえば強磁性体28bの後方側面かつ永久磁石18aの下方に設けられる。\n\n【0020】\n\nまた、永久磁石20aと20bとの間には永久磁石24が、永久磁石22aと22bとの間には永久磁石26がそれぞれ設けられる。これによって永久磁石14aと14bとの間に空隙が形成される。\n\n【0021】\n\nこのように複数の永久磁石が環状に配置されることによって、図3(a)に示すような磁気回路A1およびA2が形成される。図3(a)は図2のB-B断面(永久磁石14a上面を通る縦断面)を示す図解図である。\n\nなお、永久磁石14aと14bとは同寸法であり、永久磁石16a,16b,18aおよび18bは同寸法であり、永久磁石20a,20b,22aおよび22bは同寸法であり、永久磁石24と26とは同寸法である。\n\n【0022】\n\nさらに、永久磁石14aの下面および永久磁石14bの上面には、それぞれ強磁性体28aおよび28bが設けられる。\n\nこの実施形態において、「強磁性体」とは、飽和磁化が1.0T以上の部材をいう。\n\n強磁性体28aおよび28bとしては、たとえば電磁軟鉄や、JIS:S15Cまたはパーメンジュール等が用いられる。強磁性体28aおよび28bの幅および奥行きは、この実施形態では永久磁石14aおよび14bと同一である。\n\n強磁性体28aの下面は、永久磁石16a,18a,20aおよび22aの下面と面一になるように形成される。したがって、強磁性体28aは、磁界発生空間32(後述)近傍でありかつ磁束が通過する箇所に、永久磁石に埋め込まれるように配置される。同様に、強磁性体28bの上面は、永久磁石16b,18b,20bおよび22bの上面と面一になるように形成される。したがって、強磁性体28bは、磁界発生空間32近傍でありかつ磁束が通過する箇所に、永久磁石に埋め込まれるように配置される。その結果、強磁性体28aは互いに磁化方向の異なる複数の永久磁石14a,16a,18aおよび20aおよび22aと磁気的に結合(面接触)している。強磁性体28bについても同様である。なお、磁界発生空間32の磁束の向きと、永久磁石14a,14bの磁化方向とのなす角度は5度未満であり、略同一方向となっている。このように構成することによって、磁界発生空間32の磁界強度を向上させることができる。\n\n【0023】\n\nさらに、強磁性体28aの下面には磁極片30aが、強磁性体28bの上面には磁極片30bがそれぞれ設けられる。したがって、強磁性体28aは永久磁石14aと磁極片30aとの間に挟まれ、強磁性体28bは永久磁石14bと磁極片30bとの間に挟まれる。磁極片30aと30bとの間に磁界発生空間32が形成される。この実施形態では、磁界発生空間32において、磁極片30aと30bとのギャップG1は90mmに設定される。この磁界発生空間32の磁界強度は0.8T〜2.0Tである。\n\n【0024】\n\n図3(b)は図2のC-C断面(永久磁石24,26を通る横断面)を示す図解図であり、強磁性体28b上に環状突起を含む磁極片30bが配置された状態を示す。磁極片30b(環状突起)と永久磁石24,26とのギャップG2,G3は、3mm以上好ましくは5mm以上に設定され、磁束の短絡と均一性の劣化とを防止している。また、図3(b)に示すように、磁極片30b(環状突起)の外周面に囲まれる面積は、強磁性体28bの上面の面積よりも小さくされ、強磁性体28bによってより効率的に磁束を集められるようにしている。磁極片30a側においても同様に構成される。\n\n【0025】\n\nこのようにして装置本体12は、複数の永久磁石を用いて磁界発生空間32を有するように環状に構成される。\n\n【0026】\n\nなお、図面において、永久磁石中に描かれた実線矢印は磁石の磁化方向を示す。○(マル)の中に×(バツ印)が描かれた記号は、その記号が示された面から垂直に永久磁石に貫入する方向に磁化されていることを示す。また、○(マル)の中に·(中黒)が描かれた記号は、永久磁石からその記号が示された面を垂直に突き出る方向に磁化されていることを示す。\n\n【0027】\n\nまた、図1に示すように、強磁性体28aの周りの各永久磁石14a,16a,18a,20aおよび22aの磁化方向は、強磁性体28aから見ると外向きに、すなわち強磁性体28a側がS極となるように形成される。したがって、強磁性体28aは強力な磁極片として機能する。一方、強磁性体28bの周りの各永久磁石14b,16b,18b,20bおよび22bの磁化方向は、強磁性体28bに向かうように形成される。したがって、強磁性体28bは強力な磁極片として機能する。磁束は、磁極片30bから磁極片30aに向かって発生する。\n\n【0028】\n\n装置本体12の外周には、それぞれ板状のシールド部材34a,36a,38aおよび40aが設けられる。すなわち、装置本体12の上面にはシールド部材34aが、装置本体\n\n12の下面にはシールド部材36aが、装置本体12の一方側面にはシールド部材38aが、装置本体12の他方側面にはシールド部材40aが、それぞれ設けられる。シールド部材34a,36a,38aおよび40aは、飽和磁化が1.5T以上のたとえば鉄やパーマロイからなる板状の磁性部材からなる。シールド部材34a,36a,38aおよび40aの一方主面には、それぞれ飽和磁化(4πIs)が0.2T以下の介挿部材34b,36b,38bおよび40bが形成される。これらの介挿部材は、たとえばステンレス鋼、SUS304、アルミニウム等で構成される。これらの介挿部材の飽和磁化(4πIs)は0.1T以下である。\n\n【0029】\n\nそして、図2および図3(a)に示すように、介挿部材34b,36b,38bおよび40bが内側に来るようにシールド部材34a,36a,38aおよび40aがそれぞれ装置本体12の外周に配置され、これによって装置本体12がシールドされる。\n\n【0030】\n\nこのとき、装置本体12の永久磁石表面からシールド部材34a〜40a表面までの間隔(たとえば図3(a)においてシールド部材38aについてXで示す:介挿部材34b〜40bの厚さに相当)は、装置本体12の外寸最大値(この実施形態では幅寸法470mm)の10%以下、シールド部材34a〜40aの厚さ(たとえば図3(a)においてシールド部材38aについてYで示す)は、装置本体12の外寸最大値の10%以下に設定されることが望ましい。\n\nこの実施形態では、装置本体12の永久磁石表面からシールド部材34a〜40a表面までの間隔は0mm以上35mm以下、シールド部材34a〜40aの厚さは5mm以上35mm以下とすることが望ましい。\n\n【0031】\n\nまた、磁界発生方向の外側、つまり永久磁石14a,14bの外側においては、漏洩磁界が大きくなるが、この領域では、永久磁石14a表面からシールド部材34a表面までの間隔、永久磁石14b表面からシールド部材36a表面までの間隔、およびシールド部材34a,36aの厚さは、それぞれ、装置本体12の磁界発生方向の外寸(この実施形態では高さ寸法423mmに相当)の10%以下に設定されることがより望ましい。\n\n【0032】\n\nこのような磁界発生装置10によれば、シールド部材34a〜40aを装置本体12の永久磁石表面から0mm以上35mm以下離して設け、かつシールド部材34a〜40aの厚さを5mm以上35mm以下に設定することによって、装置自体の重量化を抑制しつつ、漏洩磁界を抑制しシールド効果および中心磁界強度を向上できる。\n\n【0033】\n\nまた、装置本体12の寸法に拘わらず、装置本体12の永久磁石表面からシールド部材34a〜40a表面までの間隔を装置本体12の外寸最大値の10%以下、シールド部材34a〜40aの厚さを装置本体12の外寸最大値の10%以下に設定すれば、上述と同様の効果が得られる。\n\n【0034】\n\nさらに、シールド部材34a〜40aとして飽和磁化1.5T以上の磁性部材を用いることによって、漏洩磁界をより効果的に抑制できる。また、このような磁性部材を用いれば、磁路を実質的に太くする効果も大きくなるので、磁気飽和を抑制でき中心磁界強度をより効果的に向上できる。\n\n【0035】\n\n装置本体12の磁界発生空間32に0.5T以上の強磁界を発生させる場合、または、装置本体12に用いられる各永久磁石としてその主面に対して平行または垂直に磁化されている磁石が用いられる場合やR-Fe-B系焼結磁石が用いられる場合であっても、所定の位置に所定のシールド部材34a〜40aを設けることによって漏洩磁界を効果的に抑制できる。\n\n【0036】\n\nまた、装置本体12の永久磁石とシールド部材34a〜40aとの間に介挿部材34b〜40bを設ければ、装置本体12とシールド部材34a〜40aとによって磁束が短絡することを抑制でき、漏洩磁界を抑制できる。\n\n【0037】\n\nこのような磁界発生装置10を用いた一実験例について説明する。\n\nこの実験例では、シールド部材34a〜40aとして鉄板を用いた。\n\nこの実験例では、シールド部材34a〜40aと装置本体12との間隔を変化させて、各位置にシールド部材34a〜40aを配置したときの磁界発生装置10の中心磁界強度および漏洩磁界0.5mTラインを測定した。また、シールド部材34a〜40aと装置本体12との間隔が0mm、35mm、40mmの各場合について、磁界発生装置10全体の重量を測定した。この実験を、シールド部材34a〜40aの厚さを5mmから40mmまで5mm刻みで厚くしていき各厚さにおいて行った。\n\n【0038】\n\nここで、「中心磁界強度」とは、磁界発生空間32の中心部における磁界の強さをいう。「漏洩磁界0.5mTライン」は、装置本体12の中心部から装置本体12の永久磁石14a上方において漏洩磁界が0.5mTとなる位置までの距離で表され、この値が小さいほど漏洩磁界が小さいことになる。\n\n因みに、シールド部材がない場合には磁界発生装置の中心磁界強度は1.053Tであり、漏洩磁界0.5mTラインは1.3mであった。\n\n【0039】\n\n図4〜図11からわかるように、シールド部材34a〜40aの厚さが大きくなるほど、中心磁界強度が向上し漏洩磁界を抑制できる。これは、磁路として機能するシールド部材34a〜40aが厚く(太く)なるほど磁束を通し易く磁気飽和を抑制できるからである。\n\n【0040】\n\nなお、図4および図5に示すように、シールド部材34a〜40aの厚さが比較的小さいときには、シールド部材34a〜40aを装置本体12の永久磁石表面に近づけすぎるより多少離して配置する方が中心磁界強度が大きくなる。これは、シールド部材34a〜40aが装置本体12の永久磁石表面に近づきすぎると磁束が短絡しやすくなるからである。\n\nしかし、図4〜図11に示すように、シールド部材34a〜40aと装置本体12の永久磁石表面との間隔が35mmを超えると、中心磁界強度を向上させる効果が小さくなる。\n\n【0041】\n\nまた、図4を参照して、シールド部材34a〜40aの厚さが5mm未満であればシールド部材を設けない場合と比べても中心磁界強度および漏洩磁界がさほど変わらずシールド機能もさほど向上せず効果的でないと考えられる。\n\n一方、図11に示すように、シールド部材34a〜40aの厚さが35mmを超えると磁界発生装置10自体の重量が大きくなりすぎる。また、シールド効果も向上しない。\n\n【0042】\n\nしたがって、シールド部材34a〜40aを装置本体12の外周において永久磁石表面から0mm以上35mm以下離して設け、かつシールド部材34a〜40aの厚さを5mm以上35mm以下に設定することが望ましく、この場合、装置自体の重量化を抑制しつつ、漏洩磁界を抑制しシールド効果および中心磁界強度を向上できる。\n\n【0043】\n\nなお、この発明は、介挿部材34b〜40bを用いずに、シールド部材34a〜40aと装置本体12との間に隙間を設ける場合にも適用できる。\n\n上述の実施形態では、シールド部材は装置本体12の外周の四面を覆うように設けられたが、これに限定されず、装置本体12の外周全面(六面)を覆うように設けられてもよい。\n\nこの発明が適用される環状型の磁界発生装置としては、磁界発生装置10のような箱型の\n\n装置だけでなく、特願2001-86098号に開示されたハルバッハ型磁界発生装置(磁気回路)のようにリング状に磁石を配置した装置であってもよい。\n\n【0044】\n\n【発明の効果】\n\nこの発明によれば、装置自体の重量化を抑制しつつ、漏洩磁界を抑制しシールド効果および中心磁界強度を向上できる。\n\n【図面の簡単な説明】\n\n【図1】この発明の一実施形態を示す分解斜視図である。\n\n【図2】この発明の一実施形態を示す斜視図である。\n\n【図3】(a)は図2に示す実施形態のB-B断面を示す図解図であり、(b)は図2に示す実施形態のC-C断面を示す図解図である。\n\n【図4】(a)はシールド部材の厚さが5mmの場合の実験結果を示すテーブルであり、(b)はそのグラフである。\n\n【図5】(a)はシールド部材の厚さが10mmの場合の実験結果を示すテーブルであり、(b)はそのグラフである。\n\n【図6】(a)はシールド部材の厚さが15mmの場合の実験結果を示すテーブルであり、(b)はそのグラフである。\n\n【図7】(a)はシールド部材の厚さが20mmの場合の実験結果を示すテーブルであり、(b)はそのグラフである。\n\n【図8】(a)はシールド部材の厚さが25mmの場合の実験結果を示すテーブルであり、(b)はそのグラフである。\n\n【図9】(a)はシールド部材の厚さが30mmの場合の実験結果を示すテーブルであり、(b)はそのグラフである。\n\n【図10】(a)はシールド部材の厚さが35mmの場合の実験結果を示すテーブルであり、(b)はそのグラフである。\n\n【図11】(a)はシールド部材の厚さが40mmの場合の実験結果を示すテーブルであり、(b)はそのグラフである。\n\n【符号の説明】\n\n10      磁界発生装置\n\n12      装置本体\n\n14a,14b,16a,16b,18a,18b,20a,20b,22a,22b,24,26      永久磁石\n\n28a,28b      強磁性体\n\n30a,30b      磁極片\n\n32      磁界発生空間\n\n34a,36a,38a,40a      シールド部材\n\n34b,36b,38b,40b      介挿部材', '【0001】\n\n技术领域\n\n磁场发生器技术领域本发明涉及一种磁场发生器,更具体地涉及用于用于检查诸如手指,小MRI设备等的主体的一部分的小MRI装置等的永磁型磁场发生器。检查食物的内容。\n\n【0002】\n\n发明背景\n\n最近,产生诸如0.8t或更多的高磁场的磁场发生器用作用于MRI设备等的永磁型磁场发生器。然而,由于永磁体始终产生磁场,因此磁场发生器的核心磁场强度得到改善,因此由于泄漏磁场等引起的事故担心。\n\n【0003】\n\n申请人提出了这种类型的磁场发生器的示例(参见专利文献1)。\n\n在该现有技术中,从提高生产率的观点来看,磁体也以平行的或垂直于它们的主表面平行或垂直于它们的主表面的磁体。然而,在这种情况下,在磁场发生器的一部分中,磁化方向变为90度,并且磁化方向突然改变,并且例如产生泄漏磁场,例如Harbach型磁场发生器。如果不能降低泄漏磁场,则磁场发生器用作医疗装置或MRI设备作为测量装置,在使用和工作中存在问题。\n\n【0004】\n\n专利文献1\n\nJP 2001-70280.\n\n【0005】\n\n本发明要解决的问题\n\n当这种磁场发生器用于MRI设备时,需要距离器件主体(磁路)的中心1米内的泄漏磁场为0.5mt。\n\n最简单的方法是用高渗透屏蔽构件(例如铁或渗透)覆盖器件本身。\n\n然而,为了获得良好的中央磁场强度并且充分地抑制漏磁场,屏蔽构件和屏蔽构件之间的距离和装置主体是重要的。如果屏蔽构件的厚度增加,则屏蔽效果变大,但是整个磁场发生器的重量变大,并且安装位置进一步受到地板强度之间的关系。\n\n【0006】\n\n因此,本发明的主要目的是提供一种磁场发生器,其可以抑制泄漏磁场,并在抑制器件本身的加权时提高中央磁场强度。\n\n【0007】\n\n[解决问题的手段]\n\n【0009】\n\n实现上述目标宣称1描述的磁场发生器磁场强度为0.8吨以上2.0吨或更小磁场产生空间它在内圆周侧作为使用多个永磁体设备主体由环形构成,在装置主体的周边上从永磁体的表面释放提供1.5 T或更多饱和磁化的屏蔽构件,和永恒的在磁体和屏蔽构件之间提供的饱和磁化为0.2吨或更少干涉它包括成员。\n\n【0010】\n\n宣称2描述的磁场发生器到1在描述的磁场发生器中,永恒的磁体的特征在于它被磁化或垂直于其主表面磁化。\n\n宣称3描述的磁场发生器或者2在磁场发生器中永恒的磁铁是R-Fe-B基磁体。\n\n【0014】\n\n宣称1据抑制漏磁场中描述的磁场发生器的磁场发生器。\n\n通过使用具有1.5 T或更大的饱和磁化强度的磁性构件作为屏蔽构件,可以更有效地抑制漏磁场。此外,如果使用这种磁性构件,则增加磁路基本增厚的效果,从而可以抑制磁饱和度并且可以进一步有效地提高中心磁场强度。\n\n当在装置主体的磁场产生空间中产生0.8t或更大和2.0t或更小的磁场时,泄漏磁场也相应地增加,但在根据权利要求1的磁场发生器中,在这种情况下即使存在,也可以有效地抑制泄漏磁场。\n\n【0015】\n\n作为用于设备主体的每个磁体,如果使用磁体或垂直磁化到主表面,则在器件体(磁路)中迅速发生磁通量变化的部分,并且发生漏磁场。但是,索赔2在本发明中描述的磁场发生器中,通过在预定位置提供预定的屏蔽构件,可以有效地抑制这种泄漏磁场。\n\n【0016】\n\n当使用的磁体是R-Fe-B磁体时,产生强大的磁场,并且泄漏磁场也相应地增加。3在这种情况下描述的磁场发生器中,即使在这种情况下,也可以有效地抑制泄漏磁场。\n\n【0017】\n\n发明内容\n\n在下文中,将参考附图描述本发明的实施例。\n\n参见图1和图2.如图1-3所示,根据本发明的实施例的磁场发生器10包括器件主体12。装置主体12使用矩形平行六面体形状或基本上矩形的主体形状的多个永磁体形成在大致矩形的平行六面体形状中,并且具有470mm×440mm×423mm的外径尺寸。用于器件12的每个永磁体基本上平行或基本垂直于永磁体的平面主表面磁化,例如各向异性R-Fe-B的烧结磁体(R由含有Y的稀土元素组成)。\n\n【0018】\n\n装置主体12包括一对矩形平行秒形永磁体14a和14b。\n\n永磁体14a设置有长方体的永像纤维16a,18a和基本矩形的永磁体20a和22a,并且永磁体14a与永磁体16a,18a,20a和22a接触。它耦合到。此时,永磁体16a和18a与永磁体14a彼此相对地设置,并且永磁体20a和22a与永磁体14a,16a和18a相对地设置。\n\n【0019】\n\n类似地,长方体永久磁体16b,18b和大致矩形的永磁体20b和22b设置在永磁体14b上,并且永磁体14b是永磁体16b,18b,20b和22b。它被连接到连接在磁力接触中。此时,永磁体16b和18b与永磁体14b彼此相对设置,并且永磁体20b和22b与永磁体14b,16b和18b彼此相对地设置。永磁体18b如图2所示。如图3B所示,如图1所示。铁磁体永磁体18a和永磁体18a的后侧和下方。\n\n【0020】\n\n此外,永磁体24分别设置在永磁体22a和22b之间的永磁体20a和20b之间。这在永磁体14a和14b之间形成气隙。\n\n【0021】\n\n通过这种方式,多个永磁体环形地布置,由此形成如图2所示的磁电路A1和A2。形成图3A。图。图3A是示出图1的BB横截面(穿过所述永磁体14A的上表面)的BB横截面(纵向截面)的说明图。\n\n永磁体14a和14b与永磁体16a,16b,18a和18b相同,并且永磁体20a,20b,22a和22b尺寸相同,并且永磁体24和26是相同的尺寸。\n\n【0022】\n\n此外,铁磁体28a和28b分别设置在永磁体14a的下表面和永磁体14b的下表面上。\n\n在该实施例中,“铁磁”是指具有1.0tt或更高的饱和磁化强度的构件。\n\n作为铁磁性物质28a和28b,例如,电磁软铁,JIS:S15C或杠杆E。在该实施例中,铁磁素28a和28b的宽度和深度与永磁体14a和14b相同。\n\n铁磁体28a的下表面形成为与永磁体16a,18a,20a和22a的下表面齐平。因此,铁磁体28a设置成嵌入永磁体中,该位置处于磁场产生空间32(稍后描述)处于附近并且磁通量通过。类似地,铁磁体28b的上表面形成为与永磁体16b,18b,20b和22b的上表面齐平。因此,将铁磁体28B设置成嵌入磁场产生空间32附近的永磁体中,并且磁通量通过。结果,铁磁体28a用具有不同磁化方向的多个永磁体14a,16a,18a和20a和22a磁耦合(表面接触)。这同样适用于铁磁体28b。磁场产生空间32的磁通量的取向和永磁体14a和14b之间的角度小于5度,这基本相同。通过以这种方式配置,可以提高磁场产生空间32的磁场强度。\n\n【0023】\n\n此外,磁极片30a设置在铁磁体28a的下表面上,并且磁极件30b设置在铁磁体28b的上表面上。因此,铁磁体28a夹在永磁体14a和磁极件30a之间,并且铁磁体28b夹在永磁体14b和磁极件30b之间。在极片30a和30b之间形成磁场产生空间32。在该实施例中,磁极片30a和30b之间的间隙G1在磁场产生空间32中设定为90mm。磁场产生空间32的磁场强度为0.8t至2.0t。\n\n【0024】\n\n图。图3B是示出图3B的CC横截面(穿过永磁体24和26)的横截面的说明图。图2示出了包括环形突起的磁极件30b设置在铁磁体上的状态28B。磁极片30B(环形突起)和永磁体24和26之间的间隙G2和G3设定为3mm或更大,优选为5mm或更大,并防止磁通量的短路和均匀性的劣化。此外,如图3B所示,如图3B所示,由磁极件30b的外周表面(环形突起)围绕的区域小于铁磁体28b的上表面的面积,更有效地通过铁磁体主体28B。收集磁通量。这同样适用于磁极件30a侧。\n\n【0025】\n\n因此,装置主体12被环形地配置成具有使用多个永磁体的磁场产生空间32。\n\n【0026】\n\n在附图中,在永磁体中绘制的实心箭头表示磁体的磁化方向。 X(布线标记)在(MAR)中绘制的符号表示符号在永磁体垂直地从所示的表面垂直磁化。而且,在(MAL)中绘制(MAL)的符号表示从永磁体的所示表面的平面沿垂直示出的指示表面的方向磁化。\n\n【0027】\n\n此外,如图2所示。如图1所示,在铁磁体28a周围围绕铁磁体28a的每个永磁体14a,16a,18a,20a和22a的磁化方向是向外的,即铁磁体28a侧是S它形成为杆。因此,铁磁体28a用作强大的极靴。另一方面,围绕铁磁体28b围绕铁磁体28b的每个永磁体14b,16b,18b,20b和22b的磁化方向形成为面对铁磁体28b。因此,铁磁体28b用作强大的极靴。磁通量由磁极件30b朝向磁极销30a产生。\n\n【0028】\n\n板状屏蔽构件34a,36a,38a和40a分别设置在装置主体12的外周上。也就是说,屏蔽构件34a是装置主体12的上表面上的装置主体\n\n在12的下表面上,屏蔽构件36a在装置主体12的一个侧表面上设置有屏蔽构件38a,并且屏蔽构件40a设置在装置主体12的另一侧表面上。屏蔽构件34a,36a,38a和40a由板状磁性构件制成,由例如铁或渗透合金制成,例如饱和磁化强度为1.5 t或更大。在屏蔽构件34a,36a,38a和40a的主表面上,形成具有0.2 t或更小的饱和磁化强度(4πis)的间隙层34b,36b,38b和40b。这些内插构件由例如不锈钢,SUS304,铝等形成。这些内插构件的饱和磁化强度(4πis)为0.1吨或更小。\n\n【0029】\n\n然后,如图1和图2所示。如图2和3A所示,屏蔽构件34a,36a,38a和40a设置在装置主体12的外周上,使得内部构件34b,36b,38b和40b向内。因此,装置主体12被屏蔽。\n\n【0030】\n\n此时,从装置主体12的永磁体12到屏蔽构件34a至40a的距离(例如,屏蔽构件38a在图3a中的x表示),内插构件34b的厚度至40b)是装置主体12的外部尺寸(在该实施例中,宽度尺寸470mm)为10%或更少,屏蔽构件34a至40a的厚度(例如,由屏蔽构件38a表示图。图3A)是设备主体是希望设定为最大尺寸的10%或更少。\n\n在该实施例中,期望设备主体12的永磁体12的永磁表面与屏蔽构件34a至40a的表面之间的距离,以及屏蔽构件34a至40a的厚度5毫米或以上35毫米或更小。\n\n【0031】\n\n此外,尽管泄漏磁场在磁场产生方向的外侧的外侧增加,即,永磁体14a和14b在该区域中增加,但是从永磁体14a的表面到表面的表面屏蔽构件34a,来自永磁体14b的表面的屏蔽构件。到达36a表面的距离和屏蔽构件34a,36a的厚度设定为磁场产生方向的轮廓的10%或更少装置主体12(相当于该实施例中的高度尺寸423mm)更期望。\n\n【0032】\n\n根据这种磁场产生装置10,屏蔽构件34a至40a与装置主体12的永磁体表面分开设置,超过0mm或更大,35mm或更小,以及屏蔽构件的厚度如图34A至40A所示,设定为5mm或更大,35mm或更小。通过这样做,同时抑制装置本身的加权,可以抑制漏磁场,并且可以提高屏蔽效果和中央磁场强度。\n\n【0033】\n\n此外,无论设备主体12的尺寸如何,从设备主体12的永磁体12到屏蔽构件34a到40a表面的距离是主体12的最大值的10%或更少的10%或更少如果设定为装置主体12的最大尺寸的10%或更少的10%或更少,则屏蔽构件34a至40a的厚度,可以获得与上述相同的效果。\n\n【0034】\n\n此外,通过使用具有1.5 T或更大的饱和磁化强度的磁性构件作为屏蔽构件34a至40a,可以更有效地抑制漏磁场。此外,如果使用这种磁性构件,则增加磁路基本增厚的效果,从而可以抑制磁饱和度并且可以进一步有效地提高中心磁场强度。\n\n【0035】\n\n在设备主体12的磁场产生空间32中,或者作为用于装置主体12的每个永磁体,或者用于装置主体12的每个永磁体,或者将磁铁用作0.5t或更多的每个永磁体。或者磁化或垂直磁化到主表面是使用。在使用R-Fe-B基烧结磁体的情况下,通过在预定位置提供预定的屏蔽构件34a至40a,可以有效地抑制泄漏磁场。\n\n【0036】\n\n另外,当插值构件34b至40b设置在设备主体12的永磁体之间和屏蔽构件34a至40a之间时,可以通过器件主体12和屏蔽抑制磁通的短路构件34a至40a,并且可以抑制磁场泄漏。\n\n【0037】\n\n将描述使用这种磁场发生器10的一个实验例。\n\n在该实验例中,使用铁板作为屏蔽构件34a至40a。\n\n在该实验例中,当屏蔽构件34a至40a设置在每个时,屏蔽构件34a至40a和装置主体12之间的距离和装置主体12之间的距离,磁场发生器10的磁场强度和漏磁场位置是0.5 mt线。它是测量的。此外,为屏蔽构件34a至40a和装置主体12的每种情况测量整个磁场发生器10的重量。在屏蔽构件34a至40a厚度为5mm至40mm的每个厚度中进行该实验并且变厚。\n\n【0038】\n\n这里,“中心磁场强度”是指磁场产生空间32的中心处的磁场的强度。 “泄漏磁场0.5mt线”由装置主体12的中心表示到泄漏磁场在漏磁场在永磁体上方0.5吨的位置处的漏磁场为0.5mt的位置14A的装置主体12,值越小,漏磁场越小。变成。\n\n顺便提及,当没有屏蔽构件时,磁场发生器的中心磁场强度为1.053T,漏磁场0.5 mt线为1.3米。\n\n【0039】\n\n从图1和图2可以看出。如图4至11所示,随着屏蔽构件34a至40a的厚度增加,可以提高中心磁场强度并且可以抑制漏磁场。这是因为磁通量可以容易地穿过屏蔽构件34a至40a,其用作厚度(厚)的磁路。\n\n【0040】\n\n如图1和图2所示。如图4和5所示,当屏蔽构件34a至40a的厚度相对较小时,屏蔽构件34a至40a以略微分开的方式放置在稍微靠近器件12的永磁体表面的略微分开的方式放置中央磁场强度增加。这是因为当屏蔽构件34a至40a接近设备主体12的永磁面时,磁通量容易短路。\n\n然而,如图1和图2所示。如图4至11所示,当屏蔽构件34a至40a的距离和装置主体12的永磁体表面超过35mm时,改善中央磁场强度的效果减小。\n\n【0041】\n\n此外,参考图1.如图4所示,如果屏蔽构件34a至40a的厚度小于5mm,与屏蔽构件没有的情况相比,中央磁场强度和泄漏磁场不得不尽可能多提供,屏蔽功能不尽可能多。它被认为是有效的。\n\n另一方面,如图2所示。如图11所示,当屏蔽构件34a至40a的厚度超过35mm时,磁场发生器10本身的重量变得太大。而且,屏蔽效果没有改善。\n\n【0042】\n\n因此,希望在装置主体12的外周处的永磁体表面设定屏蔽构件34a至0mm或更大,并且设定屏蔽构件34a的厚度在这种情况下,40A至5mm或更大,35mm或更小,同时抑制器件本身的加权,可以抑制漏磁场,并且可以提高屏蔽效果和中心磁场强度。\n\n【0043】\n\n本发明还可以应用于在屏蔽构件34a至40a和装置主体12之间设置间隙而不使用干预构件34b至40b的情况。\n\n在上述实施例中,设置屏蔽构件以覆盖设备主体12的外周的四个侧面,但不限于此,并且可以提供以覆盖整个外表面(六脚侧)设备主体12。\n\n作为应用本发明的环形磁场发生器,盒式型磁场发生器10\n\n不仅是该装置,而且还是一种装置,其中磁铁设置在日本专利申请No.2001-86098中公开的哈巴赫型磁场发生器(磁路)中的环形中。\n\n【0044】\n\n【发明效果】\n\n根据本发明,可以在抑制装置本身的加权的同时抑制泄漏磁场,并且可以改善屏蔽效果和中心磁场强度。\n\n[简要描述;简介]\n\n【图1】图3是表示本发明的一个实施方式的分解透视图。\n\n【图2】图3是表示本发明的一个实施方式的透视图。\n\n图3.(a)是示出图1所示实施例的BB横截面的说明性图。图2中示出了图2所示实施例的CC横截面的说明性图。\n\n图4.(a)是显示当屏蔽构件的厚度为5mm时的实验结果的表格,并且(b)是其图形。\n\n图5.(a)是表示当屏蔽构件的厚度为10mm时的实验结果的表格,并且(b)是其图形。\n\n6.(a)是表示当屏蔽构件的厚度为15mm时的实验结果,并且(b)是其图形的表。\n\n图7.(a)是表示屏蔽构件的厚度为20mm的实验结果的表格,并且(b)是其图形。\n\n图8.(a)是表示当屏蔽构件的厚度为25mm时的实验结果的表格,并且(b)是其图形。\n\n图9(a)是表示当屏蔽构件的厚度为30mm时的实验结果的表格,并且(b)是其图形。\n\n图10.(a)是表示当屏蔽构件的厚度为35mm时的实验结果的表格,并且(b)是其图形。\n\n11.(a)是表示当屏蔽构件的厚度为40mm时的实验结果的表格,并且(b)是其图形。\n\n[标志的说明]\n\n10磁场发生器\n\n12个设备机身\n\n图14A,14B,16A,16B,18A,18B,20A,20B,22A,22B,24,26永磁体\n\n28A,28B铁磁性\n\n30A,30B极靴\n\n32磁场产生空间\n\n34A,36A,38A,40A屏蔽构件\n\n34B,36B,38B,40B插值');
INSERT INTO `os_patent_instruction_text` VALUES (12952, 22781, 'Technisches Gebiet\n\n[0001] Die vorliegende Erfindung bezieht sich auf eine Pulverpressvorrichtung sowie auf ein Verfahren zur Herstellung eines Magneten. Die vorliegende Erfindung bezieht sich insbesondere auf ein Verfahren zur Herstellung eines Seltenerdmetall-Sintermagneten und auf eine Pulverpressvorrichtung zur Herstellung eines solchen Magneten.\n\nTechnischer Hintergrund\n\n[0002] Seltenerdmetall-Sintermagnete, die derzeit für verschiedene Anwendungszwecke eingesetzt werden, umfassen Magnete auf Seltenerdmetall-Kobalt-Basis und Magnete auf Seltenerdmetall-Eisen-Bor-Basis. Unter anderem werden die Magnete auf Seltenerdmetall-Eisen-Bor-Basis (nachstehend als ”Magnete auf R-T-(M)-B-Basis”, worin R für eines der Elemente der Seltenen Erden einschließlich Y, T entweder für Fe allein oder für eine Mischung von Fe, Co und/oder Ni, M für ein Zusatzelement (z. B. mindestens eines aus der Gruppe Al, Ti, Cu, V, Cr, Ni, Ga, Zr, Nb, Mo, In, Sn, Hf, Ta und W) und B entweder für Bor allein oder für eine Mischung von Bor und Kohlenstoff stehen) immer häufiger in verschiedenen elektronischen Geräten verwendet. Der Grund ist der, dass ein Magnet auf R-T-(M)-B-Basis ein höheres maximales Energieprodukt aufweist als irgendeiner der verschiedenen anderen Typen von Magneten und dennoch verhältnismäßig billig ist.\n\n[0003] Da die Verwendung solcher Seltenerdmetall-Sintermagnete zunimmt, wird es in steigendem Umfang erforderlich, Magnete in verschiedenen Formen herzustellen. So ist beispielsweise zur Herstellung eines Hochleistungs-Motors eine Reihe von starken anisotropen Magneten mit einer gekrümmten Oberfläche erforderlich. Zur Herstellung eines solchen anisotropen Magneten muss ein Pulver-Pressling durch Pressen eines Magnetpulvers, das unter einem Magnetfeld ausgerichtet worden ist, zu der gewünschten Gestalt verdichtet bzw. gepresst werden. In einer rotierenden Hochleistungs-Vorrichtung, z. B. in einem Motor, wird eine Vielzahl von dünnen Plattenmagneten mit einem C-förmigen oder Bogen-förmigen Querschnitt verwendet. Die Leistung einer solchen rotierenden Vorrichtung kann durch bloße Erhöhung der magnetischen Kraft der Magnete nicht in ausreichendem Maße verbessert werden. Zusätzlich muss die resultierende Magnetgestalt und Magnetfeld-Verteilung in der Nähe der Magnet-Oberfläche entsprechend gestaltet werden.\n\n[0004] Bei dem Stand der Technik weist ein Paar von Stempeln einer Pressvorrichtung gekrümmte Pressoberflächen auf, wodurch ein Pulverpressling mit den gewünschten gekrümmten Oberflächen erhalten wird. Die konventionellen Stempel können aus einem Sinterhartmetall (z. B. einer Legierung auf WC-Ni-Basis) hergestellt sein und ihre Pressoberflächen können hochglanzpoliert sein.\n\n[0005] Die Erfinder der vorliegenden Erfindung haben jedoch gefunden und durch Versuche bestätigt, dass dann, wenn die Pressoberflächen hochglanzpolierte gekrümmte Oberflächen waren, während ein magnetisches Pulver uniaxial unter einem ausrichtenden Magnetfeld gepresst wurde, die Ausrichtung des magnetischen Pulvers gestört war und die resultierende magnetische Kraft nicht so gut war. Dieses Problem ist bemerkenswert insbesondere dann, wenn die Pressrichtung im Wesentlichen die gleiche ist wie die Richtung des ausrichtenden Magnetfeldes.\n\n[0006] Wenn Permanentmagnete aus einem solchen Pressling mit einer gestörten Orientierung (Ausrichtung) hergestellt und zur Herstellung eines Motors verwendet werden, dann entsteht im Drehmoment des Motors eine nicht vernachlässigbare Zahnbildung. Bei dieser ”Drehmoment-Zahnung” handelt es sich um eine Drehmoment-Schwankung, die resultiert aus einer Änderung (Schwankung) des magnetischen Widerstandes des magnetischen Kreises eines Motors in Abhängigkeit von der Rotationsposition eines Rotors. Die Grölte dieser Drehmomentschwankung ist in der Regel gering. Wenn jedoch das Drehmomentzahnungs-Phänomen in einem Servo-gesteuerten Motor auftritt, dann kann diese Schwankung für einige Antriebs-Einrichtungen sehr empfindlich sein. Diese Drehmomentzahnung ist umso ausgeprägter, je stärker eine gestörte Orientierung (Ausrichtung) in dem konvexen Teil jedes Magneten (d. h. in einem Abschnitt des einer Spule gegenüberliegenden Motors) auftritt.\n\n[0007] Das oben genannte Problem, dass ein magnetisches Pulver, das unter einem Magnetfeld ausgerichtet worden ist und dann uniaxial gepresst wird, eine gestörte Orientierung (Ausrichtung) aufweisen kann, tritt nicht nur dann auf, wenn die Pressoberflächen gekrümmt sind, sondern auch dann, wenn eine der beiden Pressoberflächen eine Region aufweist, die gegenüber der Pressrichtung schräg (geneigt) ist. Dieses Phänomen tritt während des Verfahrens zur Herstellung von Magneten in jeder der verschiedenen Formen auf.\n\n[0008] Als Verfahren zum Füllen eines Form-Hohlraums mit einem magnetischen Pulver wird auch häufig eine Slicing-Methode angewendet. Beispielsweise wird, wie in der offengelegten japanischen Patentpublikation Nr. 2000-248 301 beschrieben, eine Beschickungsbox (oder ein Beschickungsbecher) über einen Pressform-Hohlraum geschoben, ein Pulver in der Beschickungsbox wird in den Hohlraum entleert unter Ausnutzung des Gewichtes des Pulvers selbst und der obere Teil des eingefüllten magnetischen Pulvers wird durch irgendeine Presseinrichtung, wie z. B. einen Rührer (auch als ”Rüttler” bezeichnet) innerhalb der Beschickungsbox 13 nach unten gepresst.\n\n[0009] Die Oberfläche eines magnetischen Pulvers, das unter Anwendung einer solchen Slicing-Methode eingefüllt wird, ist jedoch nicht immer parallel zu der Oberfläche einer Form (d. h. zu dem Boden des Form-Hohlraums), sondern kann entweder geneigt (schräg) zu der Richtung, in welcher der Rührer (oder der Beschickungskasten) sich bewegt, oder sogar gewunden (windschief) sein. In diesem Fall kommt selbst dann, wenn das magnetische Pulver zwischen zwei zueinander parallelen Pressoberflächen gepresst wird, mindestens ein Teil der oberen Pressoberfläche (d. h. der Oberfläche des oberen Stempels) mit der Oberfläche des magnetischen Pulvers schräg (unter einer Neigung) in Kontakt. Wenn das magnetische Pulver, das unter dem Magnetfeld ausgerichtet worden ist, in einem solchen Zustand gepresst wird, dann weisen auch die magnetischen Pulverteilchen in der Nähe der Pressoberfläche eine gestörte Orientierung (Ausrichtung) auf als Folge der Bewegung des gepressten magnetischen Pulvers, wie vorstehend beschrieben.\n\n[0010] Zudem ist aus der DE 100 19 831 A1 ein Sinterstempel, eine Pulverpressvorrichtung und ein Pulverpressverfahren zur Herstellung eines Magneten aus einem Seltenerdmetall-Legierungspulver bekannt. Aus der JP 09306767 A ist ein Verfahren zur Herstellung eines anisotropen Permanentmagnetes bekannt. Des Weiteren ist aus der JP 10270276 A eine Vorrichtung zur Herstellung eines Ferritmagneten aus einem Pulver bekannt.\n\nBeschreibung der Erfindung\n\n[0011] Um die vorstehend beschriebenen Probleme zu überwinden, besteht ein Ziel der vorliegenden Erfindung darin, eine Pressvorrichtung zur Verfügung zu stellen, mit der ein Magnetpulver wie gewünscht gepresst werden kann, sowie ein Verfahren zur Herstellung eines Magneten anzugeben, wobei die Störung in der Orientierung (Ausrichtung) des magnetischen Pulvers minimiert wird.\n\n[0012] Eine erfindungsgemäße Pressvorrichtung umfasst eine Pressform mit einer durchgehenden Öffnung, die einen Hohlraum begrenzt; eine erste Pressoberfläche und eine zweite Pressoberfläche zum Pressen eines in den Hohlraum eingefüllten magnetischen Pulvers; und eine ein Magnetfeld erzeugende Einrichtung zum Anlegen eines ausrichtenden Magnetfeldes an das magnetische Pulver in dem Formhohlraum. Mindestens eine der ersten und zweiten Pressoberflächen weist eine erste Region auf, die aus einem ersten Material mit einer Vickers-Härte hergestellt ist, die > 200, jedoch ≤ 450 beträgt, wodurch das vorstehend beschriebene Ziel erreicht wird.\n\n[0013] Die mindestens eine Pressoberfläche kann außerdem eine zweite Region auf weisen, die aus einem zweiten Material mit einer höheren Vickers-Härte als das erste Material hergestellt ist.\n\n[0014] Bei einer bevorzugten Ausführungsform weist die mindestens eine Pressoberfläche eine Region auf, die gegenüber einer Pressrichtung schräg (geneigt) ist.\n\n[0015] Die ersten und zweiten Materialien weisen vorzugsweise Permeabilitäten von 1,01 oder weniger, besonders bevorzugt von 1,001 oder weniger, auf.\n\n[0016] Bei dem ersten Material handelt es sich vorzugsweise um eine Be Cu-Legierung. Die Be Cu-Legierung umfasst vorzugsweise 96,9 bis 98,2 Massenprozent Cu und 1,6 bis 2,0 Massenprozent Be.\n\n[0017] Bei einer bevorzugten Ausführungsform ist die mindestens eine Pressoberfläche gekrümmt. Ein erfindungsgemäßes Verfahren zur Herstellung eines Magneten gemäß der vorliegenden Erfindung umfasst die folgenden Stufen: \n\nHerstellung eines magnetischen Pulvers; \n\nEinfüllen des magnetischen Pulvers in einen Pressform-Hohlraum; \n\nAusrichten des magnetischen Pulvers durch Anlegen eines ausrichtenden Magnetfeldes an das magnetische Pulver in dem Pressform-Hohlraum; und \n\nuniaxiales Pressen des ausgerichteten magnetischen Pulvers zwischen zwei einander gegenüberliegenden Pressoberflächen zur Herstellung eines Presslings.\n\n[0018] Mindestens eine der beiden Pressoberflächen weist eine Region auf, die in Bezug auf die Oberfläche des eingefüllten magnetischen Pulvers und/oder in Bezug auf eine Pressrichtung schräg (geneigt) ist und außerdem eine erste Region aufweist, die aus einem ersten Material mit einer Vickers-Härte hergestellt ist, die > 200, jedoch ≤ 450 beträgt, wodurch das vorstehend beschriebene Ziel erreicht wird.\n\n[0019] Die mindestens eine Pressoberfläche kann außerdem eine zweite Region aufweisen, die aus einem zweiten Material mit einer höheren Vickers-Härte als das erste Material hergestellt ist.\n\n[0020] Die ersten und zweiten Materialien weisen vorzugsweise Permeabilitäten von 1,01 oder weniger, insbesondere von 1,001 oder weniger, auf.\n\n[0021] Bei dem ersten Material handelt es sich vorzugsweise um eine BeCu-Legierung. Die BeCu-Legierung umfasst vorzugsweise 96,9 bis 98,2 Massenprozent Cu und 1,6 bis 2,0 Massenprozent Be.\n\n[0022] Bei einer bevorzugten Ausführungsform ist die mindestens eine Pressoberfläche gekrümmt.\n\n[0023] Die Stufe des uniaxialen Pressens kann die Stufe der Herstellung eines Presslings mit einem C- oder Bogen-förmigen Querschnitt sein.\n\n[0024] Bei einer anderen bevorzugten Ausführungsform wird das magnetische Pulver unter Anwendung einer Slicing-Methode in den Pressform-Hohlraum eingefüllt. Das magnetische Pulver hat vorzugsweise eine mittlere Teilchengröße (d. h. eine FSS-Teilchengröße) von 2 bis 10 μm.\n\n[0025] Bei noch einer anderen bevorzugten Ausführungsform verläuft das ausrichtende Magnetfeld parallel zu der Pressrichtung. Das ausrichtende Magnetfeld hat vorzugsweise eine Stärke von 0,5 bis 2,0 MA/m. Das ausrichtende Magnetfeld kann entweder ein statisches Magnetfeld oder ein Impuls-Magnetfeld (gepulstes Magnetfeld) sein.\n\n[0026] Bei noch einer anderen bevorzugten Ausführungsform umfasst das magnetische Pulver ein Seltenerdmetall-Legierungspulver.\n\n[0027] Ein erfindungsgemäßer Motor umfasst einen Magneten, der nach einem der vorstehend beschriebenen Verfahren hergestellt worden ist.\n\nKurze Beschreibung der Zeichnungen\n\n[0028] Fig. 1(a) und Fig. 1(b) zeigen in Form einer schematischen Darstellung den Hauptabschnitt einer Pulverpressvorrichtung 10 gemäß einer bevorzugten Ausführungsform der Erfindung;\n\n[0029] Fig. 2 stellt eine perspektivische Ansicht eines Seltenerdmetall-Bogen-Magneten dar, der nach einer bevorzugten Ausführungsform der vorliegenden Erfindung hergestellt werden soll;\n\n[0030] Fig. 3(a) zeigt eine Querschnittsansicht, die in schematischer Form den Zustand eines Pulvers während einer frühen Stufe einer Pressverfahrensstufe zeigt, die unter Verwendung einer konventionellen Pressvorrichtung durchgeführt wird; und\n\n[0031] Fig. 3(b) stellt eine Querschnittsansicht dar, die in schematischer Form den Zustand des Pulvers während einer späten Stufe der Pressverfahrensstufe erläutert;\n\n[0032] Fig. 4(a) stellt eine Querschnittsansicht dar, die in schematischer Form den Zustand eines Pulvers während einer frühen Stufe einer Pressverfahrensstufe erläutert, die unter Verwendung einer Pressvorrichtung gemäß einer bevorzugten Ausführungsform der Erfindung durchgeführt wird, und\n\n[0033] Fig. 4(b) zeigt eine Querschnittsansicht, die in schematischer Form den Zustand des Pulvers während einer späten Stufe der Pressverfahrensstufe erläutert;\n\n[0034] Fig. 5 stellt eine perspektivische Ansicht dar, die in schematischer Form erläutert, wie der untere Stempel 16 der Pressvorrichtung gemäß einer bevorzugten Ausführungsform der Erfindung nach der Pressverfahrensstufe aussieht;\n\n[0035] Fig. 6(a), Fig. 6(b), Fig. 6(c) und Fig. 6(d) stellen perspektivische Ansichten dar, die in schematischer Form die unteren Stempel (16) erläutern, die bei verschiedenen bevorzugten Ausführungsformen der Erfindung verwendet werden können;\n\n[0036] Fig. 7(a) stellt ein Diagramm dar, welches das gezahnte Drehmoment eines Motors zeigt, der mit einem Magneten hergestellt wurde, der ein spezifisches Beispiel für die vorliegende Erfindung darstellt, und Fig. 7(b) stellt ein Diagramm dar, welches das gezahnte Drehmoment eines Motors zeigt, der mit einem Magneten hergestellt wurde, der ein Vergleichsbeispiel darstellt.\n\nBeste Art der Durchführung der Erfindung\n\n[0037] In einer erfindungsgemäßen Pressvorrichtung weist mindestens eine der beiden Pressoberflächen zum Pressen von magnetischen Pulverteilchen, die in einem Pressform-Hohlraum unter einem magnetischen Feld ausgerichtet sind, eine Region (erste Region) auf, die aus einem Material (ersten Material) mit einer Vickers-Härte von > 200, jedoch ≤ 450, hergestellt ist. Da sie eine Härte innerhalb dieses Bereiches aufweist, wird die erste Region der Pressoberfläche unter dem Einfluss der Kraft beim Pressen der magnetischen Pulverteilchen plastisch verformt, wodurch in der ersten Region der Pressoberfläche feine Unebenheiten entstehen, die den Formen der magnetischen Pulverteilchen entsprechen. Die feinen Unebenheiten, die in der ersten Region der Pressoberfläche entstehen, funtionieren in der Weise, dass sie die magnetischen Pulverteilchen festhalten und verhindern, dass sie sich bewegen. Wenn ein Teil der Pressoberfläche, auf der die Orientierung (Ausrichtung) häufig gestört ist, die erste Region umfasst, kann daher die Störung der Orientierung (Ausrichtung) der magnetischen Pulverteilchen in der Nähe der ersten Region der Pressoberfläche minimiert werden und die Pulverteilchen in dem Pressling können parallel zu der Richtung des ausrichtenden Magnetfeldes ausgerichtet werden. in diesem Fall kann mindestens eine der beiden Pressoberflächen die erste Region aufweisen. Eine von der ersten Region verschiedene Region (d. h. eine zweite Region) kann aus einem Material (d. h. einem zweiten Material) mit einer höheren Vickers-Härte als das erste Material hergestellt sein.\n\n[0038] Die Störung der Orientierung (Ausrichtung) der magnetischen Pulverteilchen in der Nähe der Pressoberfläche beeinflusst auch sogar die magnetischen Pulverteilchen im Innern eines Presslings als Folge von magnetischen Wechselwirkungen. Infolgedessen ist die Orientierungsrichtung der Pulverteilchen im Innern des Presslings nicht mehr parallel zur Richtung des ausrichtenden Magnetfeldes und die magnetischen Eigenschaften des resultierenden Sintermagneten werden schlechter. Erfindungsgemäß kann jedoch eine solche Störung in Bezug auf die Orientierung (Ausrichtung) von magnetischen Pulverteilchen minimiert werden.\n\n[0039] Insbesondere in einem so genannten ”parallelen Press-Verfahren”, bei dem die Richtung des ausrichtenden Magnetfeldes die gleiche ist wie die Pressrichtung, bewegen sich die magnetischen Pulverteilchen leicht senkrecht zu der Pressrichtung als Folge der von den Pressoberflächen ausgeübten Kraft. Die daraus resultierende Störung der Orientierung (Ausrichtung) beeinflusst stark die magnetischen Eigenschaften des Sintermagneten. Die erfindungsgemäße Pressvorrichtung kann somit besonders wirksam in dieser Situation eingesetzt werden.\n\n[0040] Die magnetischen Pulverteilchen, die in den Pressfrom-Hohlraum eingefüllt worden sind, sind unter dem Einfluss der Kraft, die von den Pressoberflächen ausgeübt wird, besonders leicht beweglich, wenn die Pressoberflächen eine Region aufweisen, die in Bezug auf die Pressrichtung schräg (geneigt) ist (z. B. dann, wenn die Pressoberflächen selbst in Bezug auf die Pressrichtung schräg (geneigt) sind) oder wenn die Pressoberflächen gekrümmt sind. Es sei darauf hingewiesen, dass der Ausdruck ”die Pressoberflächen sind in Bezug auf die Pressrichtung schräg (geneigt)” bedeutet, dass die Pressoberflächen nicht senkrecht zu der Pressrichtung verlaufen.\n\n[0041] Insbesondere dann, wenn ein Pressling mit einem C- oder Bogen-förmigen Querschnitt (beispielsweise ein Sintermagnet für einen Motor) hergestellt wird, sind die beiden Pressoberflächen beide gekrümmt und weisen untereinander verschiedene Formen (d. h. Querschnittsgestalten in der Pressrichtung) auf. Daher ist die Orientierung (Ausrichtung) häufig auf beiden Pressoberflächen gestört. In diesem Fall werden vorzugsweise beide Pressoberflächen aus einem Material mit einer Vickers-Härte hergestellt, die innerhalb des oben angegebenen Bereiches liegt.\n\n[0042] Selbst wenn die beiden Pressoberflächen zueinander parallele ebene Flächen darstellen, kann es sein, dass die Oberfläche des magnetischen Pulvers, das in den Presshohlraum eingefüllt worden ist, nicht flach (eben) ist. In diesem Fall sind die Pressoberflächen, die mit den Oberflächen des magnetischen Pulvers in Kontakt stehen, ebenfalls schräg (geneigt). Aber selbst wenn das so ist, kann durch Verwendung von Pressoberflächen, die aus einem Material mit einer Vickers-Härte hergestellt sind, die innerhalb des oben angegebenen Bereiches liegt, die Störung der Orientierung (Ausrichtung) der magnetischen Pulverteilchen ebenfalls minimiert werden. Daher werden die Effekte der vorliegenden Erfindung auch dann erzielt, wenn der Pressform-Hohlraum beispielsweise unter Anwendung eines Massen-Slicing-Verfahrens mit dem magnetischen Pulvermaterial gefüllt wird.\n\n[0043] Es sei darauf hingewiesen, dass dann, wenn das Material der Pressoberflächen eine Vickers-Härte von über 450 hat, die Pressoberflächen möglicherweise nicht gut genug plastisch verformt werden, um die Effekte der Minimierung der Störung der Orientierung vollständig zu erzielen. Wenn jedoch die Vickers-Härte 200 oder weniger beträgt, dann kann die Form des resultierenden Presslings etwas verschieden sein von der vorgegebenen Form. Es kann daher etwas länger dauern, um die anschließende Verfahrensstufe der Umformung des Presslings durchzuführen, oder die Lebensdauer der Pressoberflächen kann kürzer sein als erwartet. Unter Berücksichtigung der Präzision der Form des Presslings und der Lebensdauer der Stempel (oder Pressoberflächen) wird ein Material mit einer Vickers-Härte von mindestens 250 besonders bevorzugt verwendet.\n\n[0044] Wenn die Pressoberflächen aus einem Material mit einer Permeabilität von 1,01 oder weniger hergestellt sind, dann wird das ausreichende Magnetfeld durch dieses Material überhaupt nicht beeinflusst. Somit kann ein ausrichtendes Magnetfeld mit einer vorgegebenen Richtung an das Materialpulver innerhalb des Pressform-Hohlraums angelegt werden. Besonders bevorzugt weist das Material der Pressoberflächen eine Permeabilität von 1,001 oder weniger auf. Wenn dagegen die Pressoberflächen aus einem rostfreien Stahl auf Cr-Ni-Basis (einem SUS 304-Stahl nach den JIS Standards mit einer Permeabilität von etwa 1,02 bis etwa 1,06) hergestellt sind, dann ist die Flussdichte um das Zentrum des Pressform-Hohlraum herum verhältnismäßig hoch, das Magnetpulver wird in Richtung auf diese Region konzentriert und die Orientierung (Ausrichtung) wird leicht gestört. Vorzugsweise wird eine BeCu-Legierung (unter anderem eine BeCu-Legierung, die 96,9 bis 98,2 Massenprozent Cu und 1,6 bis 2,0 Massenprozent Be umfasst) verwendet.\n\n[0045] Eine BeCu-Legierung ist auch weniger teuer als ein Sinterhartmetall. Da die Pressoberflächen als Folge des Pressverfahrens plastisch verformt werden, besteht keine Notwendigkeit, diese Oberflächen auf Hochglanz zu polieren. Daher kann ein Material, das gerade beispielsweise durch eine elektrische Entladung geformt worden ist, so wie es erhalten wird verwendet werden, wodurch die Herstellungskosten auf vorteilhafte Weise weiter gesenkt werden. Auch ist eine BeCu-Legierung leicht maschinell bearbeitbar und kann wirksam als Material für die Stempel zur Herstellung von zahlreichen Arten von Magneten in geringen Mengen verwendet werden. Es sei darauf hingewiesen, dass selbst dann, wenn die BeCu-Legierung verwendet wird, das Pressverfahren wiederholt, beispielsweise für zu etwa 1000 Zyklen (Schüsse), durchgeführt werden kann.\n\n[0046] Nachstehend werden bevorzugte Ausführungsformen der vorliegenden Erfindung unter Bezugnahme auf die beiliegenden Zeichnungen beschrieben. Bei den nachstehend erläuterten bevorzugten Ausführungsformen wird angenommen, dass die beiden Pressoberflächen beide gekrümmt sind. Die vorliegende Erfindung ist jedoch keineswegs auf diese spezifischen bevorzugten Ausführungsformen beschränkt.\n\nPressvorrichtung\n\n[0047] Die Fig. 1(a) und Fig. 1(b) erläutern den Hauptabschnitt einer Pulverpressvorrichtung 10 gemäß dieser bevorzugten Ausführungsform der Erfindung. Die Pressvorrichtung 10, wie sie in Fig. 1 dargestellt ist, umfasst eine Pressform 12 mit einer durchgehenden Öffnungen (d. h. einer Formöffnung) 12a, die einen Hohlraum begrenzt, und einen oberen Stempel 14 und einen unteren Stempel 16 zum Pressen eines magnetischen Pulvers 18 innerhalb der durchgehenden Öffnung. Das Ende des oberen Stempels 14 einschließlich seiner Kompressionsachse weist eine konvexe Querschnittsform auf, während das Ende des unteren Stempels 16 eine konkave Querschnittsform hat. Ein Pressform-Aufbau, bestehend aus der Pressform 12, dem oberen Stempel 14 und dem unteren Stempel 16 steht mit einer Antriebs-Einrichtung (nicht dargestellt) in Verbindung, um so eine vertikale Bewegung, wie sie für ein Pressverfahren erforderlich ist, durchzuführen. Die Pressvorrichtung 10 gemäß dieser bevorzugten Ausführungsform der Erfindung arbeitet im Prinzip auf die gleiche Weise wie jede bekannte Pressvorrichtung.\n\n[0048] Die Form des Pressform-Aufbaus für die Verwendung bei dieser bevorzugten Ausführungsform ist so gestaltet, dass ein bogenförmiger dünner Platten-Seltenerdmetallmagnet 20 hergestellt wird wie in Fig. 2 dargestellt. Dieser Seltenerdmetallmagnet 20 ist parallel zu dem Pfeil A, wie er in Fig. 2 angegeben ist (d. h. in der Pressrichtung), magnetisiert. Der Seltenerdmetallmagnet 20, wie er in Fig. 2 dargestellt ist, kann als Teil eines Motors oder irgendeiner anderen rotierenden Vorrichtung verwendet werden. Wenn der Magnet 20 für einen Motor verwendet wird, ist die Form des Magneten 20 vorzugsweise so gestaltet, dass eine schräge (schiefe Ebene) entsteht und dadurch ein gezahntes Drehmoment vermindert wird.\n\n[0049] Wie in der Fig. 1(a) dargestellt, wird der Hohlraum über dem oberen Abschnitt des unteren Stempels 16, der teilweise in die durchgehende Öffnung 12a der Pressform 12 eingeführt worden ist, gebildet und mit dem magnetischen Pulver 18 gefüllt. Der Hohlraum ist ein Pressraum, der begrenzt wird durch die Pressoberfläche 16a des unteren Stempels 16 und die innere Oberfläche der durchgehenden Öffnung 12a.\n\n[0050] Das Pulver wird in den Hohlraum eingefüllt durch Transportieren einer Beschickungsbox (nicht dargestellt), die mit dem magnetischen Pulver gefüllt ist, bis sie über dem Hohlraum angeordnet ist, und Einfüllen des Pulvers in den Hohlraum durch Öffnen des Bodens der Beschickungsbox. Der Hohlraum kann nicht mit dem Pulver gleichförmig gefüllt werden, indem man das Pulver einfach aufgrund seiner Schwerkraft hineinfallen lässt. Daher wird das magnetische Pulver 18 vorzugsweise in den Hohlraum hineingepresst durch Antreiben eines Rüttlers (nicht dargestellt), der im Innern der Beschickungsbox horizontal vorgesehen ist (vgl. die oben genannte offengelegte japanische Publikation Nr. 2000-248 301).\n\n[0051] Während die Beschickungsbox aus der Position über dem Pressform-Hohlraum zurückgezogen wird, wird die Oberseite des magnetischen Pulvers 18 mit dem Bodenrand der Beschickungsbox abgestreift, wodurch eine vorgegebene genaue Menge an Pulver 18, das gepresst werden soll, in den Formhohlraum eingefüllt wird. Jedoch kann die Oberfläche des eingefüllten magnetischen Pulvers 18 in Bezug auf die Oberfläche der Pressform 12 teilweise schräg (geneigt) sein.\n\n[0052] Diese Pressvorrichtung 10 ist dadurch gekennzeichnet, dass die Pressoberflächen 14a und 16a der oberen und unteren Stempel 14 und 16 aus einer BeCu-Legierung (beispielsweise aus BC-2, hergestellt von der Firma Sumitomo Special Metals Co., Ltd.) hergestellt sind. Die BeCu-Legierung ist ein nicht-magnetisches Material mit einer Vickers-Härte von > 200, jedoch ≤ 450 und einer Permeabilität von 1,001 oder weniger. Eine BeCu-Legierung, die 96,9 bis 98,2 Massenprozent Cu und 1,6 bis 2,0 Massenprozent Be enthält, ist ausreichend, um diese Vickers-Härte- und Permeabilitäts-Bereiche zu erzielen.\n\n[0053] In der Pressvorrichtung 10 gemäß dieser bevorzugten Ausführungsform sind die Pressoberflächen 14a und 16a vollständig aus der BeCu-Legierung hergestellt. Daher kann die Störung der Orientierung des magnetischen Pulvers 18 wirksam minimiert werden, wie weiter unten beschrieben. in diesem Beispiel sind die Pressoberflächen 14a und 16a vollständig aus der BeCu-Legierung hergestellt. Die Effekte der Verminderung der Störung der Orientierung des magnetischen Pulvers 18 sind jedoch nur erzielbar, wenn mindestens eine der beiden Pressoberflächen 14a und 16a eine Region (d. h. eine erste Region) aufweist, die aus der BeCu-Legierung hergestellt ist.\n\n[0054] Es sei darauf hingewiesen, dass selbst dann, wenn die Pressoberflächen 14a und 16a vollständig aus der BeCu-Legierung hergestellt sind, nur die Pressoberflächen 14a und 16a, nicht jedoch die gesamten oberen und unteren Stempel 14 und 16 aus der BeCu-Legierung hergestellt sein müssen. Dennoch sind zur Erzielung eines ausreichenden Grades einer plastischen Verformung Abschnitte mit einer Dicke von etwa 2 mm oder mehr, welche die Pressoberflächen umfassen, vorzugsweise aus der BeCu-Legierung hergestellt. Normalerweise werden diese Bedingungen leicht erfüllt, wenn die Pressoberflächen, die vorgegebene Formen haben, aus einem BeCu-Legierungsblock hergestellt sind. Da die BeCu-Legierung eine gewisse Elastizität aufweist, ist zwischen den seitlichen Oberflächen des oberen Stempels 14 und dem durchgehenden Loch 12a und/oder zwischen den seitlichen Oberflächen des unteren Stempels 16 und durchgehenden Loch 12a vorzugsweise ein Spielraum von etwa 5 bis 60 μm vorgesehen.\n\n[0055] Wenn der Pressform-Hohlraum mit dem magnetischen Pulver 18 gefüllt worden ist, beginnt sich der obere Stempel 14 abzusenken. Die Pressoberfläche 14a des oberen Stempels 14 presst die obere Oberfläche des darunterliegenden Pulvers 18, wie in der Fig. 1(b) dargestellt. Nachdem das magnetische Pulver 18 durch den oberen Stempel 14, den unteren Stempel 16 und die Pressform 12 eingeschlossen ist, wird mittels einer ein magnetisches Feld erzeugenden Spule (nicht dargestellt) ein ausrichtendes Magnetfeld an das Pulver 18 in dem Hohlraum angelegt. Der magnetische Fluss wird in die oberen und unteren Stempel 14 und 16 gelenkt, wodurch die Richtung des ausrichtenden Magnetfeldes innerhalb des Hohlraums identisch gemacht wird (d. h. identisch mit der Richtung, in welcher der obere Stempel arbeitet). Unter diesem ausrichtenden Magnetfeld werden die gepressten Pulverteilchen auf die Richtung des Magnetfeldes ausgerichtet. Das ausrichtende Magnetfeld hat vorzugsweise eine Stärke von 0,5 bis 2,0 MA/m. Das ausrichtende Magnetfeld kann entweder ein statisches Magnetfeld oder ein Impuls-Magnetfeld sein.\n\n[0056] Nach dem Anlegen des ausrichtenden Magnetfeldes an das Pulver wird das magnetische Pulver innerhalb des Hohlraumes gepresst und verdichtet durch die oberen und unteren Stempel 14 und 16, wodurch ein Pulver-Pressling 24 hergestellt wird. Im Verlaufe dieses Pressverfahrens wirken auf das gepresste magnetische Pulver 18 verschiedene Kräfte (oder Drucke) ein, je nach ihrer Anordnung. Nachdem der Pressling 24 erhalten worden ist, wird der obere Stempel 14 angehoben und der untere Stempel 16 schiebt den Pressling 24 nach oben, wodurch der Pressling 24 aus der Pressform-Öffnung 12a herausgenommen wird.\n\n[0057] Die Fig. 3(a) erläutert in schematischer Form, wie die magnetischen Pulverteilchen 18a in der Anfangsstufe eines Pressverfahrens, das unter Verwendung einer konventionellen Pressvorrichtung durchgeführt wird, orientiert (ausgerichtet) werden. Andererseits erläutert die Fig. 3(b) in schematischer Form, wie die magnetischen Pulverteilchen 18a in der späten Stufe des Pressverfahrens ausgerichtet (orientiert) werden.\n\n[0058] Die jeweiligen magnetischen Pulverteilchen 18a werden unter dem ausrichtenden Magnetfeld nicht nur in Richtung auf die Richtung des ausrichtenden Magnetfeldes orientiert, sondern sie werden auch mechanisch fest miteinander verbunden. Als Folge davon werden die Pulverteilchen 18a auf die Richtung des ausrichtenden Magnetfeldes wie in der Fig. 3(a) dargestellt ausgerichtet. Wenn der Abstand zwischen den oberen und unteren Stempeln 14\' und 16\' unter dem angelegten ausrichtenden Magnetfeld abnimmt, wirken ungleichförmige Drucke (oder Kräfte) auf die jeweiligen Abschnitte des gepressten Pulvers ein, weil die Stempeloberflächen 14a und 16a\' gekrümmt sind. Wenn jedoch die Pressoberflächen 14a\' und 16a\' aus einem viel härteren Sintercarbid-Metall mit hochglanzpolierten glatten Oberflächen hergestellt sind, dann gleiten die Pulverteilchen auf den glatten Pressoberflächen 14a\' und 16a\' in seitlicher Richtung (d. h. in Richtungen, die eine Komponente senkrecht zu der Pressrichtung aufweisen). Als Folge davon wird die Orientierung (Ausrichtung) gestört, wie in Fig. 3(b) darstellt.\n\n[0059] Im Gegensatz dazu ist bei dieser bevorzugten Ausführungsform dieses Gleiten der Pulverteilchen in der Nähe der Pressoberflächen stark vermindert, wodurch die Störung der Orientierung minimiert wird, wie in den Fig. 4(a) und Fig. 4(b) dargestellt. Der Grund ist folgender: die Pressoberflächen 14a und 16a (hergestellt aus der BeCu-Legierung) der oberen und unteren Stempel 14 und 16 werde unter dem Einfluss der Kräfte, die auf die Pulverteilchen 18a einwirken, plastisch verformt. Als Folge davon entsteht auf der BeCu-Legierungs-Pressoberfläche 16a des unteren Stempels 16 eine feine Unebenheit, wie in Fig. 5 schematisch dargestellt. Diese Unebenheit äußert sich in einer Oberflächenrauheit Ra von 0,05 bis 12,5 μm. Die Pressoberfläche 16a ist in Fig. 5 erläutert. Es entsteht jedoch eine ähnliche Unebenheit auch auf der Pressoberfläche 14a. Diese feinen Unebenheiten, die auf den Pressoberflächen 14a und 16a entstehen, vermindern das Gleiten der Pulverteilchen 18a in signifikantem Umfang, wodurch die Störung der Orientierung (Ausrichtung) minimiert wird.\n\n[0060] Wie vorstehend beschrieben, werden die magnetischen Pulverteilchen 18a unter dem Einfluss des Magnetfeldes magnetisch aneinander gekoppelt. Daher überwiegt die Bewegung der Pulverteilchen im Innern des Hohlraums gegenüber derjenigen der Pulverteilchen in der Nähe der Pressoberflächen 14a und 16a. Aus diesem Grund kann gerade durch die plastische Verformung der Pressoberflächen 14a und 16a entsprechend der Gestalt der Pulverteilchen 18a, die mit den Pressoberflächen 14a und 16a in Kontakt kommen, die Abnahme des Ausrichtungsgrades für alle Pulverteilchen 18a innerhalb des Hohlraums minimiert werden.\n\n[0061] Es sei darauf hingewiesen, dass die Unebenheit der Pressoberflächen 14a und 16a auf die Oberfläche des resultierenden Presslings 24 übertragen wird. Durch anschließendes Polieren der Oberfläche des Magneten, je nach Bedarf, können jedoch diese übertragenen Muster leicht entfernt werden und die Magnet-Oberfläche kann geglättet werden.\n\n[0062] Bei der vorstehend beschriebenen bevorzugten Ausführungsform sind die Pressoberflächen 14a un', '技术领域\n\n  [0001] 粉末压制装置和磁体的制造方法技术领域本发明涉及粉末压制装置和磁体的制造方法。 更具体地,本发明涉及一种用于制造稀土烧结磁体的方法以及一种用于制造这种磁体的粉末压制设备。\n\n 技术背景\n\n  [0002] 当前用于各种用途的稀土烧结磁体包括稀土钴基磁体和稀土铁硼基磁体。 其中,稀土-铁-硼基磁体(以下称为“ RT-(M)-B-基磁体”),其中R代表包括Y,T的稀土元素之一,其单独代表Fe或代表Fe。  Fe,Co和/或Ni,M的混合物,用于其他元素(例如,Al,Ti,Cu,V,Cr,Ni,Ga,Zr,Nb,Mo,In,Sn,Hf,  Ta和W)和B要么单独代表硼,要么代表硼和碳的混合物)越来越多地用于各种电子设备中。 原因是基于R-T-(M)-B的磁体具有比各种其他类型的磁体中的任一种更高的最大能量乘积,但是相对便宜。\n\n  [0003] 随着这种稀土烧结磁体的使用增加,越来越需要制造各种形状的磁体。 例如,需要一系列具有弯曲表面的强各向异性磁体来制造高性能电机。 为了制造这样的各向异性磁体,必须通过压制已经在磁场下对准的磁性粉末将压粉体压缩成期望的形状。 在重型旋转设备中,例如 在电动机中,使用了具有C形或弧形横截面的多个薄板磁体。 仅通过增加磁体的磁力不能充分改善这种旋转装置的性能。 另外,必须相应地设计最终的磁体形状和磁体表面附近的磁场分布。\n\n  [0004] 在现有技术中,挤压装置的一对冲头具有弯曲的挤压表面,从而获得具有期望的弯曲表面的粉末压块。 常规冲头可以由硬质合金(例如,WC-Ni基合金)制成,并且它们的挤压表面可以镜面抛光。\n\n  [0005] 然而,本发明的发明人发现并通过实验证实,当在对准磁场下单向压制磁粉的同时,压制表面为镜面弯曲的曲面时,磁粉的取向受到干扰并且所产生的磁力没有 很好。 当按压方向与对准磁场的方向基本相同时,该问题特别显着。\n\n  [0006] 如果永磁体由这种具有受干扰的取向(对准)的压块制成并且用于制造电动机,则电动机的转矩中会出现不可忽略的齿形。 该“转矩齿”是由电动机的磁路的磁阻根据转子的旋转位置的变化(变动)引起的转矩变动。 该转矩波动的最大通常很小。 但是,当在伺服控制电动机中出现转矩齿槽现象时,这种波动对某些驱动设备可能非常敏感。 在每个磁体的凸部(即,在电动机的面对线圈的部分)中发生的取向(对准)越混乱,该转矩齿槽越明显。 \n\n[0007] 上述问题是,在磁场下取向然后单轴压制的磁粉不仅在压制表面弯曲时还会在取向表面(取向)上产生干扰(取向)。 两个挤压表面中的一个具有相对于挤压方向倾斜(倾斜)的区域。 在制造各种形式的磁体的过程中会发生这种现象。\n\n  [0008] 作为用磁性粉末填充模腔的方法,通常也使用切片法。 例如,如日本特开2000-248 301号公报所述,将装载箱(或装载杯)在模腔上滑动,利用粉末本身和粉末的重量将装载箱内的粉末倒入腔内。 填充的磁粉的上部通过诸如 B.装箱13中的搅拌器(也称为“振动器”)。 按下。\n\n  [0009] 但是,使用这种切片方法填充的磁粉表面并不总是与模具表面平行(即与模具腔体的底部平行),而是可以相对于模具的方向倾斜(倾斜)。 搅拌器(或装载箱)移动的位置,甚至是弯曲的(弯曲的)。 在这种情况下,即使在彼此平行的两个挤压表面之间挤压磁粉,上挤压表面的至少一部分(即上冲头的表面)也至少倾斜地(倾斜)地与磁粉表面接触。 当在这种状态下对已经在磁场下取向的磁粉进行挤压时,如上所述,由于被挤压的磁粉的运动,在挤压表面附近的磁粉颗粒也具有干扰的取向(取向)。  。\n\n  [0010] 此外,DE 100 19 831 A1公开了一种用于由稀土合金粉末制造磁体的烧结模,粉末压制装置和粉末压制方法。 根据JP 09306767,已知一种用于制造各向异性永磁体的方法。 此外,由JP 10270276A已知一种由粉末制造铁氧体磁体的装置。\n\n 发明内容\n\n  [0011] 为了克服上述问题,本发明的一个目的是提供一种压制设备,利用该压制设备可以根据需要压制磁性粉末,以及一种制造磁体的方法,其中取向(取向 )的磁性粉末被最小化。\n\n  [0012] 根据本发明的压制装置包括压制模具,该压制模具具有界定腔的通孔; 第一挤压表面和第二挤压表面,用于挤压填充在腔体中的磁粉。 磁场产生装置,用于向模腔中的磁性粉末施加对准磁场。 第一和第二挤压表面中的至少一个具有第一区域,该第一区域由维氏硬度大于200但≤450的第一材料制成,从而实现了上述目的。\n\n  [0013] 至少一个压榨表面还可以具有由第二材料制成的第二区域,该第二材料具有比第一材料更高的维氏硬度。\n\n  [0014] 在一个优选的实施方式中,至少一个挤压表面具有相对于挤压方向倾斜(倾斜)的区域。\n\n  [0015] 第一材料和第二材料的渗透率优选为1.01或更小,特别优选为1.001或更小。\n\n  [0016] 第一材料优选是Be Cu合金。 所述Be Cu合金优选包含96.9至98.2质量%的Cu和1.6至2.0质量%的Be。\n\n  [0017] 在一优选实施例中,至少一个挤压表面是弯曲的。 根据本发明的用于制造根据本发明的磁体的方法包括以下步骤:\n\n 制造磁性粉末; \n\n将磁性粉末填充到模腔中;\n\n 通过向模腔中的磁粉施加对准磁场来对准磁粉; 和\n\n 在两个相对的挤压表面之间单轴挤压取向的磁性粉末以产生压块。\n\n  [0018] 两个挤压表面中的至少一个具有相对于填充的磁性粉末的表面和/或相对于挤压方向倾斜(倾斜)的区域,并且还具有由具有维氏硬度的第一材料制成的第一区域。  ≥200但≤450,从而达到上述目的。\n\n  [0019] 至少一个压榨表面还可以具有第二区域,该第二区域由第二材料制成,该第二材料具有比第一材料更高的维氏硬度。\n\n  [0020] 第一材料和第二材料的渗透率优选为1.01或更小,特别是1.001或更小。\n\n  [0021] 第一材料优选是BeCu合金。  BeCu合金优选包含96.9至98.2质量%的Cu和1.6至2.0质量%的Be。\n\n  [0022] 在一优选实施例中,至少一个挤压表面是弯曲的。\n\n  [0023] 单轴压制步骤可以是制造具有C形或弓形横截面的压块的步骤。\n\n  [0024] 在另一优选实施例中,使用切片方法将磁性粉末填充到模腔中。 磁性粉末的平均粒径(FSS粒径)优选为2〜10μm。\n\n  [0025] 在又一优选实施例中,对准磁场平行于按压方向。 取向磁场的强度优选为0.5〜2.0MA / m。 对准磁场可以是静磁场或脉冲磁场(脉冲磁场)。\n\n  [0026] 在另一个优选的实施方案中,磁性粉末包括稀土合金粉末。\n\n  [0027] 根据本发明的电动机包括磁体,该磁体已经通过上述方法之一制造。\n\n 附图的简要说明\n\n  [0028]  图。  1(a)和 图。 图1(b)示意性地示出了粉末压制设备10的主要部分。 根据本发明的优选实施例;\n\n  [0029]   图。 图2是根据本发明的优选实施例制造的稀土金属电弧磁体的透视图。\n\n  [0030]   图。 图3(a)是示意性地表示使用现有的加压装置进行的加压处理阶段的初期的粉体的状态的剖视图。 和\n\n  [0031]   图。 图3(b)是示意地表示加压工序的后期的粉末状态的剖视图。\n\n  [0032]   图。 图4(a)是示意性地说明使用根据本发明的优选实施方式的加压装置进行的加压处理阶段的初期的粉末的状态的剖视图。\n\n  [0033]   图。 图4(b)是示意性地说明加压工序的后期中的粉末的状态的剖视图。\n\n  [0034]   图。 图5是示意性地说明下冲头16的方式的立体图。 根据本发明的优选实施例的压制装置在压制处理阶段之后看起来像。\n\n  [0035]   图。  6(a), 图。  6(b), 图。  6(c)和 图。 图6(d)是透视图,其以示意性形式示出了可以在本发明的各种优选实施方式中使用的下模(16)。 \n\n[0036]   图。 图7(a)是示出由磁体制成的电动机的齿转矩的图,该磁体是本发明的具体示例,并且 图。 图7(b)是示出作为比较例的由磁体制成的电动机的齿转矩的曲线图。\n\n 实施发明的最佳方式\n\n  [0037] 在根据本发明的挤压装置中,用于挤压磁性粉末颗粒的两个挤压表面中的至少一个在磁场下在挤压模腔中排列,具有由维氏硬度的材料(第一材料)制成的区域(第一区域)。 确定> 200,但≤450。 由于其硬度在该范围内,因此在压制磁性粉末颗粒时受力的作用下,压制表面的第一区域发生塑性变形,从而在压制表面的第一区域中产生了与磁粉颗粒的形状相对应的细微凹凸。 出现在压制表面的第一区域中的细小凸起起到将磁性粉末颗粒保持在适当位置并防止其移动的作用。 因此,当压制表面的经常受到取向(取向)干扰的部分包括第一区域时,可以使压制表面的第一区域附近的磁性粉末颗粒和成形体中的粉末颗粒的取向(取向)干扰最小化。 可以平行于对准磁场的方向对准。 在这种情况下,两个挤压表面中的至少一个可以具有第一区域。 除第一区域之外的区域(即第二区域)可以由维氏硬度比第一材料高的材料(即第二材料)制成。\n\n  [0038] 压粉表面附近的磁性粉末颗粒的取向(取向)的紊乱也由于磁相互作用而甚至影响成形体内的磁性粉末颗粒。 结果,压粉体内的粉末颗粒的取向方向不再与取向磁场的方向平行,并且所得到的烧结磁体的磁性能劣化。 然而,根据本发明,可以将对磁性粉末颗粒的取向(取向)的这种干扰最小化。\n\n  [0039] 特别地,在取向磁场的方向与挤压方向相同的所谓的“平行挤压法”中,磁性粉末颗粒由于从挤压表面施加的力而容易垂直于挤压方向移动。 取向(对准)的结果扰动极大地影响了烧结磁体的磁性能。 因此,根据本发明的挤压装置可以在这种情况下特别有效地使用。\n\n  [0040] 当压制表面具有相对于压制方向倾斜的区域时,填充到压制模具腔中的磁性粉末颗粒特别容易在压制表面施加的力的影响下移动。  (例如,当按压表面本身相对于按压方向倾斜(倾斜)时)或当按压表面弯曲时。 应当注意的是,表述“挤压表面相对于挤压方向倾斜(倾斜)”是指挤压表面不垂直于挤压方向。\n\n  [0041] 特别地,当制造具有C形或弧形横截面的压块(例如,用于电动机的烧结磁体)时,两个压紧表面都弯曲并且具有彼此不同的形状(即,压紧方向上的横截面形状)。 因此,在两个挤压表面上的取向(对准)经常受到干扰。 在这种情况下,两个挤压表面优选地由维氏硬度在上述范围内的材料制成。 \n\n[0042] 即使两个挤压表面是彼此平行的平坦表面,填充到挤压腔中的磁性粉末的表面也可能不是平坦的。 在这种情况下,与磁性粉末的表面接触的挤压表面也倾斜(倾斜)。 然而,即使这样,通过使用维氏硬度在上述范围内的材料制成的压制表面,也可以使磁性粉末颗粒的取向(取向)的干扰最小。 因此,例如,即使当使用大量切片方法用磁性粉末材料填充模腔时,也可以获得本发明的效果。\n\n  [0043] 应当注意,如果压制表面的材料具有大于450的维氏硬度,则压制表面可能不会充分良好地塑性变形以完全实现最小化取向干扰的效果。 然而,如果维氏硬度为200或更小,则所得压块的形状可能与预定形状略有不同。 因此,可能需要花费更长的时间来执行使成形体成形的后续处理步骤,否则压榨表面的寿命可能比预期的要短。 考虑到压坯的形状的精确度和冲头(或压制表面)的寿命,特别优选使用维氏硬度至少为250的材料。\n\n  [0044] 如果压制表面由磁导率等于或小于1.01的材料制成,则足够的磁场将完全不受该材料的影响。 因此,可以将具有预定方向的对准磁场施加到模腔内的材料粉末。 压榨表面的材料特别优选具有1.001或更小的渗透率。 另一方面,如果挤压表面是由Cr-Ni基不锈钢(根据JIS标准的SUS 304钢,导磁率约为1.02至1.06)制成的,则磁通密度在模具中心附近 -在相对较高的腔附近,磁粉朝该区域集中,并且容易干扰取向(取向)。 优选使用BeCu合金(包括包含96.9至98.2质量%的Cu和1.6至2.0质量%的Be的BeCu合金)。\n\n  [0045]  BeCu合金也比硬质合金便宜。 由于压制过程导致压制表面发生塑性变形,因此无需将这些表面抛光至高光泽度。 因此,可以使用例如通过放电刚形成的材料来获得,从而有利地进一步降低了制造成本。 另外,BeCu合金易于加工并且可以有效地用作用于少量制造各种磁体的模具材料。 应该注意的是,即使当使用BeCu合金时,也可以重复地执行压制过程,例如,最多进行约1000次循环(喷丸)。\n\n  [0046] 下面将参考附图描述本发明的优选实施例。 在下面说明的优选实施例中,假定两个挤压表面都是弯曲的。 但是,本发明决不限于这些特定的优选实施例。\n\n 压紧装置 \n\n[0047]   图。  1(a)和 图。 图1(b)说明了粉末压制设备的主要部分。 根据本发明的该优选实施例。 压紧装置10 如 图。中所示。 如图1所示,管芯包括12 其开口(即模具开口) 12a 划定了一个腔,然后是上冲头14 和较低的邮票16 用于压制18磁粉。 在通孔内。 上部标记的结尾14 包括其压缩轴的截面形状为凸形,而下部冲头的末端为16 具有凹形的横截面形状。 压模结构,由压模12组成。  ,上部标记14 较低的标记16 为了执行加压过程所需的垂直运动,驱动器P1连接到驱动装置(未示出)。 压紧装置10 根据本发明的该优选实施例的原理上,其原理与任何已知的压紧装置相同。\n\n  [0048] 设计用于该优选实施例中的模具组件的形状,使得弓形薄板稀土磁体20 按照 图。制造。 显示了2个。 此稀土磁铁20 与箭头A平行,如 图。所示。  2(即在按压方向)被磁化。 稀土磁铁20 就像他在 图。中所做的那样。 可以将图2中的电动机用作电动机或任何其他旋转装置的一部分。 当磁铁20 用于电动机时,磁铁的形状为20 最好将其设计成产生一个倾斜的(倾斜的平面),从而减小带齿的转矩。\n\n  [0049] 如 图。中所示。 如图1(a)所示,下冲头上部上方的空腔变为16 部分插入通孔 12a 模具12 已被引入,形成并与磁粉18 填充。 空腔是由压紧表面 16a界定的压紧空间。 下标16的值。 和通孔的内表面 12a  。\n\n  [0050] 通过运输填充有磁性粉末的装载箱(未显示),直到将其放置在空腔上,然后通过打开装载箱的底部将粉末填充到空腔中,将粉末填充到空腔中。 仅仅通过使粉末由于重力而落入空腔中,就不能将粉末均匀地填充到空腔中。 因此,磁粉变为18 优选地,通过驱动水平地设置在装载箱内部的振动器(未示出)而将其压入空腔中(参见上述日本特开2000-248 301号公报)。\n\n  [0051] 当从模腔上方撤出装载箱时,磁性粉末的顶部变为18 用装料箱的底部边缘剥离,以产生预定精确量的粉末18 将要被压入的模腔填充。 但是,填充的磁粉表面可能18 相对于模具的表面12 局部倾斜(倾斜)。 \n\n[0052] 此压紧装置10 其特征在于,挤压表面 14a 和 16a 上下邮票14 和16 由BeCu合金制成(例如,住友特殊金属有限公司制造的BC-2)。  BeCu合金是一种非磁性材料,维氏硬度> 200但≤450,磁导率小于或等于1.001。 包含96.9质量%至98.2质量%的Cu和1.6质量%至2.0质量%的Be的BeCu合金足以实现这些维氏硬度和磁导率范围。\n\n  [0053] 在冲压设备中10 根据该优选实施例,挤压表面为 14a 和 16a 完全由BeCu合金制成。 因此,磁粉的取向受到干扰18 可以如下所述有效地最小化。 在此示例中,压榨表面为 14a 和 16a 完全由BeCu合金制成。 减少磁粉18取向干扰的效果。 但是,只有两个压紧表面中的至少一个 14a才能实现。 和 16a 具有由BeCu合金制成的区域(即,第一区域)。\n\n  [0054] 应该注意的是,即使施压面 14a 和 16a 完全由BeCu合金制成,只有压制表面 14a 和 16a 但不是整个上下邮票14 和16 必须由BeCu合金制成。 然而,为了获得足够程度的塑性变形,构成挤压表面的厚度约为2mm或更大的部分优选地由BeCu合金制成。 通常,如果具有预定形状的压制表面由BeCu合金锭制成,则容易满足这些条件。 由于BeCu合金具有一定的弹性,因此上冲头的侧面之间存在14 通孔 12a 和/或下冲头的侧面之间16 和通孔 12a 优选地,提供约5至60μm的余量。\n\n  [0055] 当模腔内带有磁性粉末18 填充完毕后,开始上打孔14 降低。 压榨表面 14a 上面的邮票14 按压下面的粉末的顶部表面18  ,如 图。中所示。  1(b)。 后磁粉18 通过上面的标记14  ,下部标记16 和死12 包括一个磁场产生线圈(未显示),用于对粉末18施加对准磁场。 适用于型腔。 磁通量位于上下标14中。 和16 从而使腔内对准磁场的方向相同(即与上冲头操作的方向相同)。 在该定向磁场下,压制的粉末颗粒在磁场方向上定向。 取向磁场的强度优选为0.5〜2.0MA / m。 对准磁场可以是静磁场或脉冲磁场。 \n\n[0056] 在对粉末施加取向磁场后,将磁性粉末压入型腔内部,并通过上下冲头14压实。 和16  ,制成粉末颗粒24 将被生产。 在此压制过程中,18作用在压制的磁粉上。 不同的力(或压力)取决于它们的布置。 后颗粒24 已获得,上一个打孔器变为14 并降低邮票16 推动颗粒24 向上,从而使颗粒24 从模具开口 12a 被取出。\n\n  [0057]   图。 图3(a)以示意图形式解释了磁性粉末颗粒 18a如何。 在使用常规压制装置执行的压制过程的初始阶段,可将其定向(对准)。 另一方面, 图。解释。 图3(b)以示意图形式,如磁性粉末颗粒 18a 在压制过程的后期对齐(定向)。\n\n  [0058] 各个磁性粉末颗粒 18a 它们不仅在对准磁场下沿对准磁场的方向取向,而且彼此机械牢固地连接。 结果,粉末颗粒变为 18a 在对准磁场的方向上,如 图。所示。 图3(a)对齐。 如果上下冲头之间的距离为14\' 和16\' 在施加的对准磁场下减小,由于压模表面 14a,不均匀的压力(或力)作用在压粉的各个部分上。 和 16a\' 是弯曲的。 但是,当按压表面 14a\'时。 和 16a\' 由硬得多的硬质合金金属制成,具有高度抛光的光滑表面,然后粉末颗粒在光滑的压制表面上滑动 14a\' 和 16a\' 沿横向方向(即,具有垂直于挤压方向的分量的方向)。 结果,如 图。那样,方向(对齐)受到干扰。 图3(b)表示。\n\n  [0059] 相反,在该优选实施例中,如 图。中那样,极大地减少了粉末颗粒在挤压表面附近的滑动,从而使取向的干扰最小。  4(a)和 图。  4(b)。 原因如下:挤压表面 14a 和 16a  (由BeCu合金制成)的上部和下部印章14 和16 受到作用在粉末颗粒 18a上的力的影响。 动作,塑性变形。 结果,在BeCu合金压制表面上产生了 16a 较低的邮票16的标签。 如 图。中的小凸起。 图5示意性地示出。 这种不均匀度以0.05至12.5μm的表面粗糙度Ra表示。 压机表面 16a 在 图。中。  5解释。 但是,在挤压表面 14a上也会出现类似的不平整。  。 这些出现在印刷机表面上的细小凸起 14a 和 16a 产生时,减少粉末颗粒的滑动 18a 在很大程度上,从而使定向(对准)的破坏最小化。\n\n  [0060] 如上所述,磁性粉末颗粒变为 18a 在磁场的影响下彼此磁耦合。 因此,腔室内的粉末颗粒的运动大于在压紧表面附近的粉末颗粒的运动 14a 和 16a  。 因此,压榨表面的塑性变形 14a 和 16a 相应的粉末颗粒形状 18a 压机表面 14a 和 16a 接触后,所有 18a粉末粉末的取向度都会降低。 可以在型腔内最小化。 \n\n[0061] 应当注意,挤压表面的不平整度 14a 和 16a 在所得颗粒的表面上24 被传输。 然而,通过随后根据需要抛光磁体的表面,可以容易地去除这些转印的图案并且可以平滑磁体的表面。\n\n  [0062] 在上述优选实施例中,挤压表面是 14a 和 16a 完全由BeCu合金制成。 或者,如 图。中所示。  6(a)至 图。 如图6(d)所示,一个或多个区域(即一个或多个第一区域) 16b 按压表面 16a 由BeCu合金制成,而一个或多个其他区域(即第二区域) 16c 由非磁性硬质合金金属(例如,维氏硬度为1200,磁导率为1,0003的WC-Ni)或高合金锰钢(维氏硬度为460,磁导率为1.004)制成 。 挤压表面可以自然地 14a 就像压机表面 16a 还包含第一和第二区域。\n\n  [0063] 第二区域的材料的维氏硬度 16c 可以大于第一区域的材料的碳原子数,可以超过450,优选700或更高。 如果使用维氏硬度为700以上的材料,则即使连续使用也几乎不磨损,并且可以仅在第一区域变形的情况下反复使用。 如上所述,按压表面是 16a 优选地,由具有1.01或更小的磁导率的材料制成。 因此,第二个区域也是 16c 优选地,由具有1.01或更小的磁导率的材料制成。 渗透率特别优选为1.001或更小。\n\n  [0064] 在压榨面上 16a 第一个和第二个区域可以是 16b 和 16c 以各种模式的形式出现,例如 图。中的模式。  6(a)至 图。  6(d)。 特别是,如 图。中所示。 在图6(a)中,多个第一区域 16b 以压机表面 16a前面的小岛的形式出现。 统一安排。 或者,如 图。中所示。  6(b)至 图。 在图6(d)中,一个或多个第一区域 16b 可以选择性地或集中地布置磁性粒子的取向(取向)容易受到干扰的位置。 当多个第一区域 16b 如果提供,每个第一区域的大小和形状均受 16b的限制。 没有特别的限制,但是可以根据制造挤压表面的方法适当地确定。  。\n\n  [0065] 磁性粒子的取向(取向)容易受到干扰的区域根据按压表面的形状而偏移 16a  (和/或挤压表面 14a)使用切片方法装入粉末时,对齐磁场的方向和挤压方向与搅拌器移动的方向之间的关系。 因此,第一或更多个第一区域的布置可以是 16b 确定时要考虑这些因素。 在说明的平行挤压方法中,特别是在挤压表面的周边区域中的取向(对准)变为 16a 在大倾角时特别容易受到干扰。 因此,在 图。中。  6(b)至 图。 图6(d)示出了第一区域 16b的示例。 在压机表面 16a的此类区域中。 意。 在这种情况下,按压表面的倾斜角度为 16a 由垂直于压制方向的平面(通常是水平面)定义,该平面用作参考平面。 \n\n[0066] 一个或多个第一个区域( 16b)可以位于压机表面上 16a 使用例如以下步骤。 特别是下部冲头的主体部分16 来自一个或多个第二区域的材料 16c  (例如,由非磁性硬质合金制成)。 然后,可以在作为第一个区域 16b的区域中制作孔或凹槽。 应采取行动,然后将BeCu合金注入其中,或者将其焊接到孔或凹槽中。 为了使粉末颗粒的取向(取向)干扰最小化,BeCu合金的第一个区域 16b 形式的厚度至少为几微米。 为了获得足够程度的塑性变形,BeCu合金的厚度优选为2mm以上。  BeCu合金的厚度可以以合适的方式确定,例如通过用于制造第一区域的特定方法 16b  。\n\n  [0067] 当制造用于发动机的C形或拱形压块时,压紧表面的至少一部分变为 16a  ,其形成压块的凸面,优选由BeCu合金制成。 然后,可以最小化定向的干扰并且可以有效地减小齿转矩。\n\n 生产合金粉末的方法\n\n  [0068] 本发明可以有效地应用于稀土金属烧结磁体的制造,并且在基于R-T-(M)-B基的高性能稀土金属烧结磁体的制造中特别有效。\n\n  [0069]  R-T-(M)-B基稀土磁体合金铸造薄片是通过已知的流延铸造法生产的。 特别地,具有由30重量%的Nd,1.0重量%的B,1.2重量%的Dy,0.2重量%的Al,0.9重量%的Al组成的合金。 通过使用高频熔化法熔化%Co和Fe以及余下的不可避免的杂质,从而获得熔化的合金。 将熔融合金保持在1350℃,然后通过单辊法快速冷却,以获得0.3毫米厚的铸造合金薄片。 在这种情况下,快速冷却过程的条件包括辊的圆周速度约为1 m / s,冷却速度为500°C / min和过冷却速度为180°C / min。 快速冷却速率定义为10 2 到10 4  °C /秒\n\n  [0070] 以这种方式获得的快速凝固的合金具有0.03至10mm的厚度。 合金中的R 2  T 14  B晶粒的短轴尺寸为0.1μm至100μm,长轴尺寸为5至500μm,并且富R相出现在R 2的晶界处。  T 14  B晶粒分散。 富R相的厚度为10μm或更小。 例如,在美国专利第5,383,978号中描述了一种使用带材铸造法制造合金材料的方法。 基于R-T-(M)-B的稀土磁体合金粉末具有细长的形状,所述细长的形状具有高的纵横比并且在压制过程中流动性(或压制性)差。 \n\n[0071] 然后将粗粉状的合金材料倒入材料包中,然后将其放在架子上。 此后,使用材料运输器将装有材料包的搁板运输到氢炉的前部,然后引入到氢炉中。 然后,在氢炉中开始氢粉碎过程。 即,将合金材料加热并在氢炉内进行氢粉碎处理。 以这种方式粗粉碎的合金材料在温度授权降低到大约室温后取出。 但是,如果在合金温度仍然很高时(例如,在40至80℃的范围内)将合金材料从炉中取出,则除非合金暴露于空气中,否则合金将不会被大量氧化。 作为该氢粉碎过程的结果,稀土合金被粉碎成约0.1至约1.0mm的粒径。 如上所述,在对该合金材料进行氢粉碎处理之前,已将其粗粉碎成平均粒径为1至10mm的薄片。\n\n  [0072] 在使用该氢粉碎法将合金材料粉碎后,优选将脆性提高的合金进一步粉碎,并使用冷却装置等冷却装置进行粉碎。  B.旋转冷却器,已冷却。 如果从熔炉中取出的物料仍处于较高温度,则应使用旋转冷却器将物料冷却相当长的时间。\n\n  [0073] 此后,使用旋转式冷却器冷却至室温附近的温度的粉末材料使用诸如粉碎机的粉碎机进行更精细的粉碎。  B.喷射磨以生产细粉材料。 考虑到所得的磁性,细粉的平均粒径(FSSS粒径)优选为2至10μm。 在该优选实施方案中,使用喷射磨在氮气气氛中将粉末材料精细地粉碎以获得平均粒径为约3.5μm的合金粉末。 在该氮气气氛中的氧浓度优选仅为约10,000ppm。 例如在日本专利公报第6-6728号中描述了这种喷射磨。 特别地,优选通过控制用于细粉碎过程的气体气氛中的氧化性气体(即氧气或水蒸气)的浓度,将细粉碎的合金粉末中所含的氧的重量调整为6000ppm以下。 原因是,如果稀土合金粉末中所含的氧的重量超过6000ppm,则所得到的烧结磁铁中的非磁性氧化物的合计含量过高而无法获得良好的磁性。\n\n  [0074] 然后添加0.3重量%的润滑剂,并在振动混合器中与合金粉末混合,结果合金粉末颗粒的表面被润滑剂覆盖。 作为润滑剂,可以使用用石油溶剂稀释的脂肪酸酯。 在该优选实施方案中,己酸甲酯用作脂肪酸酯,异链烷烃用作石油溶剂。 己酸甲酯和异链烷烃可以例如以1:9的重量比相互混合。 这种润滑剂不仅防止粉末颗粒通过覆盖其表面而被氧化,而且还改善了压制粉末的取向度和粉末可压制性(即,可以容易地取出所得的压块)。 \n\n[0075] 应当注意,润滑剂不限于示例给出的类型。 例如,己酸甲酯作为脂肪酸酯可以被辛酸甲酯,月桂酸甲酯或月桂酸甲酯代替。 优选的溶剂的实例包括石油溶剂,例如异链烷烃和环烷溶剂。 可以在任何时间添加润滑剂:在精细粉碎过程之前,之中或之后。 固体(干)润滑剂,例如 B.硬脂酸锌,也可以代替或补充液体润滑剂。\n\n  [0076] 应当注意,通过该方法生产的粉末具有窄的粒度分布,因此具有良好的流动性。 因此,如果沿与粉末取向方向相同的方向挤压粉末,则在挤压过程中仅略微干扰了取向。 通过添加润滑剂等。  B.脂肪酸酯,各个粉末颗粒可以更容易地排列,但是它们的流动性变差。 结果,容易受到按压的影响。 当施加例如0.8至2.0T的高取向磁场以获得高磁性能时,这种取向差变得更加明显。 在这种情况下,根据该优选实施方式,通过使用具有由BeCu合金制成的加压表面的加压装置,可以获得明显的效果。\n\n 稀土磁体的制造方法\n\n  [0077] 首先,使用 图。中描述的方法制备通过上述方法生产的磁性粉末。 在对准磁场下按压(压缩)图1。\n\n  [0078] 在以这种方式压制并压实粉末之后,用下部冲头得到的粉末压块变为16 向上推并从压紧装置中卸下。 此时,表示按压面的微小凹凸的图案为 14a 和 16a 在压制过程中在压坯表面(已与压制表面 14a和 16a接触)上复制。 在该优选实施例中,如 图。中那样,可以获得具有几乎不受干扰的取向(取向)的粉末压块。  4(b)。\n\n  [0079] 为了能够更轻松,顺畅地从压模中取出压块,可以在倒粉之前,在压模表面上完全或部分地涂上脱模剂。 脱模剂优选通过用溶剂稀释脂肪酸酯而获得。 优选的脂肪酸酯的实例特别包括己酸甲酯,辛酸甲酯,月桂酸甲酯和月桂酸甲酯。 可以使用石油溶剂如异链烷烃作为溶剂,脂肪酸酯和溶剂可以以1:20至1:1的重量比混合。 任选地,脂肪酸可包含1.0重量%或更少的花生酸。\n\n  [0080] 然后将压块放在烧结板上(厚度为0.5到3 mm)。 该板可以例如由钼材料组成。 颗粒24 板上的金属被插入烧结盒中。 颗粒24的烧结壳体。 装载的金属被运送到烧结炉,并在其中进行已知的烧结过程。 作为该烧结过程的结果,从压坯获得烧结体。\n\n  [0081] 此后,如果需要,对烧结体的表面进行抛光。 在烧结体的表面上是反映压榨表面的细微不平整度的表面图案 14a 和 16a 对应,仍然可用。 这些表面图案中的一些或全部可以通过使用抛光工艺去除。 在该抛光工序之后或代替该抛光工序,也可以进行例如用树脂膜覆盖烧结体的表面的工序。 以这种方式,获得了最终产品或稀土磁体。 \n\n[0082] 上面已经参照具有可成功地用于电动机或其他旋转装置中的形状的稀土磁体描述了本发明的优选实施例。 但是,本发明决不限于这些特定的优选实施例。\n\n  [0083] 在 图。中。 如图2所示,磁体的上下表面都是弯曲的。 然而,当两个表面中的仅一个是弯曲的时,也可以完全实现本发明的效果。 在这种情况下,冲头的用于形成非弯曲的平坦表面的压制表面可以由与常规材料相同的材料(例如,硬质合金金属)制成。\n\n  [0084] 另外,如已经参考 图。 在图1(a)中,磁性粉末的表面18 已使用切片填充方法将其填充到型腔中,而不平行于模具的表面12 但可以向某个方向倾斜(倾斜)或倾斜(缠绕)。 在这种情况下,即使两个挤压表面是彼此平行的平坦表面,与磁性粉末的表面接触的那些挤压表面也向其倾斜。 因此,当使用通过镜面抛光制成的常规压制表面,例如硬质合金金属时,会出现取向混乱的问题。 然而,通过使用具有由BeCu合金制成的压制表面的压制装置,可以通过与上述相同的机构来使磁性粉末颗粒的取向(取向)的干扰最小化。\n\n 实例和比较例\n\n  [0085] 用挤压机10挤压稀土合金粉末。 压制和压实,其中包括压制表面 14a 和 16a   图。中,由BeCu合金制成(例如,住友特殊金属有限公司(Sumitomo Special Metals Co.,Ltd。)制造的BC-2)。 显示了1个。 在该示例中,制造了压实体,使得其长度为40 mm(在 图。中由箭头B指示的方向上测量)。 在图2中,沿箭头A所示方向测得的其中央部分的厚度为7mm,沿垂直于箭头A和B两者的方向测得的宽度为35mm,以具有4的压缩密度。  30克/厘米3 达到。 在挤压方向(即,沿箭头A)上施加约1MA / m的对准磁场。 之后,在氩气气氛中在1050℃下将成型体烧结2小时以获得磁体。 将该磁铁磁化,然后在磁铁表面附近获得磁通密度分布。\n\n  [0086] 为了比较,用具有由传统的硬质合金制成的压制表面的压制装置进行了类似的压制过程,以制造磁体作为比较例。\n\n  [0087] 本发明实施例获得的通量密度分布优于比较例,并且没有显示出由于取向度降低而引起的任何异常分布。\n\n  [0088] 确定了使用该示例的磁体制成的电动机的齿转矩曲线。 结果在 图。中。  7(a)。 为了比较,还确定了包含比较例的磁体的电动机的齿转矩曲线。 结果在 图。中。  7(b)。\n\n  [0089] 如 图。中所示。  7(a)和 图。  如图7(b)所示,与比较例的电动机相比,本发明的电动机的转矩齿足够小。 根据本发明的电动机的转矩齿减小的原因是,当使用挤压方法时,成形体中的取向(对准)几乎不被打扰。\n\n 工业适用性 \n\n[0090] 在根据本发明的挤压装置中,其挤压表面的至少一部分由具有合适的维氏硬度的材料制成。 因此,当粉末在取向磁场下被挤压时,可以防止粉末颗粒在挤压表面上滑动,从而使粉末的取向(取向)的干扰最小。\n\n  [0091] 使用这种压制装置制成的粉末压块具有均匀的取向,并且由这种压块制成的稀土磁体具有优异的磁性能。\n\n  [0092] 如果使用根据本发明的方法制造的磁体来制造电动机,则可以减小转矩曲线的齿。');
INSERT INTO `os_patent_instruction_text` VALUES (12953, 22782, 'TECHNICAL FIELD\n\n[0001]The present invention relates to a powder press machine and a method for producing a magnet. More particularly, the present invention relates to a method for producing a rare-earth sintered magnet and a powder press machine for producing such a magnet.\n\nBACKGROUND ART\n\n[0002]Rare-earth sintered magnets currently used extensively in various applications include rare-earth-cobalt based magnets and rare-earth-iron-boron based magnets. Among other things, the rare-earth-iron-boron based magnets (which will be referred to herein as “R-T-(M)-B based magnets”, where R is one of the rare-earth elements including Y, T is either Fe alone or a mixture of Fe, Co and/or Ni, M is an additive element (e.g., at least one of Al, Ti, Cu, V, Cr, Ni, Ga, Zr, Nb, No, In, Sn, Hf, Ta and W) and B is either boron alone or a mixture of boron and carbon) are used more and more often in various electronic appliances. This is because an R-T-(M)-B based magnet exhibits a higher maximum energy product than any of various other types of magnets and yet is relatively inexpensive.\n\n[0003]As the applications of those rare-earth sintered magnets expand, it becomes increasingly necessary to produce magnets in various shapes. For example, to produce a high-performance motor, a number of strong anisotropic magnets with a curved surface are required. To produce such an anisotropic magnet, a powder compact needs to be compacted into a desired shape by pressing a magnetic powder that has been aligned under a magnetic field. A high-performance rotating machine such as a motor uses a plurality of thin-plate magnets with a C- or arched cross section. The performance of such a rotating machine cannot be improved sufficiently just by increasing the magnetic force of the magnets. In addition, the resultant magnet shape and magnetic field distribution in the vicinity of the magnet surface also have to be just as designed.\n\n[0004]In the prior art, the pair of punches of a press machine has curved press surfaces, thereby obtaining a powder compact with desired curved surfaces. The conventional punches may be made of a cemented carbide (e.g., a WC—Ni based alloy) and the press surfaces thereof may be mirror polished.\n\n[0005]However, the present inventors discovered and confirmed via experiments that if the press surfaces were mirror-polished curved surfaces while a magnetic powder was uniaxially pressed under an aligning magnetic field, then the orientation of the magnetic powder was disturbed and the resultant magnet performance was not so good. This problem is quite noticeable particularly when the pressing direction is substantially the same as the direction of the aligning magnetic field.\n\n[0006]If permanent magnets are made of such a compact with the disturbed orientation and used to produce a motor, then a non-negligible degree of cogging will be created in the torque of the motor. The “torque cogging” is a torque variation resulting from a variation in the magnetic resistance of the magnetic circuit of a motor with the rotational position of a rotor. The magnitude of this torque variation is usually small. However, if the cogging torque phenomenon occurs in a power steering motor, for example, then that variation could be quite sensible to some drivers. This torque cogging becomes even more perceivable when there is such disturbed orientation in the convex portion of each magnet (i.e., a portion of the motor facing a coil).\n\n[0007]The above-mentioned problem that a magnetic powder, which has been aligned under a magnetic field and is now being pressed uniaxially, can have disturbed orientation arises not only when the press surfaces are curved but also when one of the two press surface has a region that is tilted with respect to the pressing direction. This phenomenon occurs during the manufacturing process of magnets in any of various shapes.\n\n[0008]Also, a slicing technique is often used as a method for filling a cavity with a magnetic powder. For example, as disclosed in Japanese Laid-Open Publication No. 2000-248301, a feeder box (or a feeder cup) is slid over a cavity, a powder in the feeder box is loaded into the cavity by utilizing the weight of the powder itself, and the upper portion of the loaded magnetic powder is pressed downward by some pressing means such as an agitator (also called a “shaker”) provided within the feeder box 13.\n\n[0009]However, the surface of a magnetic powder that has been loaded by such a slicing technique is not always parallel to the surface of a die (i.e., the bottom of the cavity) but may be either tilted in the direction in which the agitator (or the feeder box) moves or even winding. In that case, even if the magnetic powder is pressed between two mutually parallel press surfaces, at least a portion of the upper press surface (i.e., the surface of the upper punch) contacts with the surface of the magnetic powder obliquely. If the magnetic powder that has been aligned under the magnetic field is pressed in such a state, then the magnetic powder particles in the vicinity of the press surface will also have disturbed orientation due to the movement of the compressed magnetic powder just as described above.\n\nDISCLOSURE OF INVENTION\n\n[0010]In order to overcome the problems described above, an object of the present invention is to provide a press machine to make a magnetic powder compact just as intended, and a method for producing a magnet, with the disturbance in the orientation of the magnetic powder minimized.\n\n[0011]A press machine according to the present invention includes: a die with a through hole that defines a cavity; a first press surface and a second press surface for pressing a magnetic powder loaded in the cavity; and magnetic field generating means for applying an aligning magnetic field to the magnetic powder in the cavity. At least one of the first and second press surfaces has a first region, which is made of a first material having a Vickers hardness that is higher than 200 but equal to or lower than 450, thereby achieving the object described above.\n\n[0012]The at least one press surface may further have a second region, which is made of a second material having a higher Vickers hardness than the first material.\n\n[0013]In one preferred embodiment, the at least one press surface has a region which is tilted with respect to a pressing direction.\n\n[0014]The first and second materials preferably have permeabilities of 1.01 or less, more preferably 1.001 or less.\n\n[0015]The first material is preferably a BeCu alloy.\n\n[0016]The BeCu alloy preferably includes 96.9 mass % to 98.2 mass % of Cu and 1.6 mass % to 2.0 mass % of Be.\n\n[0017]In one preferred embodiment, the at least one press surface is curved.\n\n[0018]A method for producing a magnet according to the present invention includes the steps of: preparing a magnetic powder; loading the magnetic powder into a cavity; aligning the magnetic powder by applying an aligning magnetic field to the magnetic powder in the cavity; and uniaxially pressing the aligned magnetic powder between two opposed press surfaces to make a compact. At least one of the two press surfaces has a region that is tilted with respect to the surface of the magnetic powder loaded and/or a pressing direction and also has a first region, which is made of a first material with a Vickers hardness that is higher than 200 but equal to or lower than 450, thereby achieving the object described above.\n\n[0019]The at least one press surface may further have a second region, which is made of a second material having a higher Vickers hardness than the first material.\n\n[0020]The first and second materials preferably have permeabilities of 1.01 or less, more preferably 1.001 or less.\n\n[0021]The first material is preferably a BeCu alloy.\n\n[0022]The BeCu alloy preferably includes 96.9 mass % to 98.2 mass % of Cu and 1.6 mass % to 2.0 mass % of Be.\n\n[0023]In one preferred embodiment, the at least one press surface is curved.\n\n[0024]The step of uniaxially pressing may be the step of making a compact with a C- or arched cross section.\n\n[0025]In another preferred embodiment, the magnetic powder is loaded into the cavity by a slicing technique. The magnetic powder preferably has a mean particle size (i.e., FSS particle size) of 2 μm to 10 μm.\n\n[0026]In still another preferred embodiment, the aligning magnetic field is parallel to the pressing direction. The aligning magnetic field preferably has a strength of 0.5 MA/m to 2.0 MA/m. The aligning magnetic field may be either a static magnetic field or a pulse magnetic field.\n\n[0027]In yet another preferred embodiment, the magnetic powder includes a rare-earth alloy powder.\n\n[0028]A motor according to the present invention includes a magnet produced by one of the methods described above.\n\nBRIEF DESCRIPTION OF DRAWINGS\n\n[0029]FIGS. 1(a) and 1(b) are schematic representations showing the main portion of a powder press machine 10 according to a preferred embodiment.\n\n[0030]FIG. 2 is a perspective view of an arched rare-earth magnet to be produced as a preferred embodiment of the present invention.\n\n[0031]FIG. 3(a) is a cross-sectional view schematically illustrating the state of a powder during an early stage of a pressing process step being performed by a conventional press machine, and FIG. 3(b) is a cross-sectional view schematically illustrating the state of the powder during a late stage of the pressing process step.\n\n[0032]FIG. 4(a) is a cross-sectional view schematically illustrating the state of a powder during an early stage of a pressing process step being performed by a press machine according to a preferred embodiment, and FIG. 4(b) is a cross-sectional view schematically illustrating the state of the powder during a late stage of the pressing process step.\n\n[0033]FIG. 5 is a perspective view schematically illustrating how the lower punch 16 of the press machine according to the preferred embodiment looks like after the pressing process step.\n\n[0034]FIGS. 6(a), 6(b), 6(c) and 6(d) are perspective views schematically illustrating lower punches 16 which may be used in various preferred embodiments of the present invention.\n\n[0035]FIG. 7(a) is a graph showing the cogging torque of a motor that was produced with a magnet representing a specific example of the present invention, and FIG. 7(b) is a graph showing the cogging torque of a motor that was produced with a magnet representing a comparative example.\n\nBEST MODE FOR CARRYING OUT THE INVENTION\n\n[0036]In a press machine according to the present invention, at least one of the two press surfaces thereof for pressing magnetic powder particles, which are aligned in a cavity under a magnetic field, has a region (first region) which is made of a material (first material) with a Vickers hardness that is higher than 200 but equal to or lower than 450. Having a hardness falling within this range, the first region of the press surface is deformed plastically under the force pressing the magnetic powder particles, thereby creating fine unevenness corresponding to the shapes of the magnetic powder particles in the first region of the press surface. The fine unevenness that has been formed in the first region of the press surface functions so as to catch the magnetic powder particles and prevent them from moving. Accordingly, if a portion of the press surface on which the orientation is often disturbed includes the first region, the disturbance in the orientation of the magnetic powder particles in the vicinity of the first region of the press surface can be minimized and the powder particles in the compact can be aligned parallel to the direction of the aligning magnetic field. In this case, at least one of the two press surfaces may have the first region. The region other than the first region (i.e., a second region) may be made of a material (i.e., a second material) with a higher Vickers hardness than the first material.\n\n[0037]The disturbance in the orientation of magnetic powder particles in the vicinity of the press surface also affects even magnetic powder particles inside of a compact due to magnetic interactions. As a result, the orientation direction of the powder particles inside of the compact becomes no longer parallel to the direction of the aligning magnetic field and the magnetic properties of the resultant sintered magnet deteriorate. However, according to the present invention, such disturbance in the orientation of magnetic powder particles can be minimized.\n\n[0038]Particularly, in a so-called “parallel pressing” process in which the direction of the aligning magnetic field is the same as the pressing direction, the magnetic powder particles easily move perpendicularly to the pressing direction due to the force applied from the press surfaces. The resultant disturbance in orientation seriously affects the magnetic properties of the sintered magnet. Thus, the press machine of the present invention can be used particularly effectively in that situation.\n\n[0039]The magnetic powder particles that have been loaded into the cavity are movable especially easily under the force applied from the press surfaces when the press surfaces have a region that is tilted with respect to the pressing direction (e.g., when the press surfaces themselves are tilted with respect to the pressing direction) or when the press surfaces are curved. It should be noted that the phrase “the press surfaces are tilted with respect to the pressing direction” means that the press surfaces are not perpendicular to the pressing direction.\n\n[0040]Particularly when a compact having a C- or arched cross section (e.g., a sintered magnet for a motor) is made, the two press surfaces are both curved and have mutually different shapes (i.e., their cross-sectional shapes as taken in the pressing direction). Accordingly, the orientation is often disturbed on both of the two press surfaces. In that case, both of the two press surfaces are preferably made of a material with a Vickers hardness falling within the range described above.\n\n[0041]Even if the two press surfaces are mutually parallel flat planes, the surfaces of the magnetic powder that has been loaded into the cavity may not be flat. In that case, the press surfaces in contact with the surfaces of the magnetic powder are also tilted. Even so, by using press surfaces that are made of a material with a Vickers hardness falling within the range specified above, the disturbance in the orientation of the magnetic powder particles can also be minimized. Accordingly, the effects of the present invention are achieved when the cavity is filled with the magnetic powder material by a mass-producible slicing technique, for example.\n\n[0042]It should be noted that if the material of the press surfaces had a Vickers hardness exceeding 450, then the press surfaces could not be plastically deformed well enough to achieve the effects of minimizing the orientation disturbance fully. However, if the Vickers hardness were 200 or less, then the shape of the resultant compact would be somewhat different from the predetermined shape. Accordingly, it might take a longer time to carry out the subsequent process step of reshaping the compact or the life of the press surfaces might be shorter than expected. Considering the shape precision of the compact and the life of the punches (or press surfaces), a material with a Vickers hardness of at least 250 is more preferably used.\n\n[0043]If the press surfaces are made of a material with a permeability of 1.01 or less, then the aligning magnetic field is not affected by this material at all. Thus, an aligning magnetic field with a predetermined direction can be applied to the magnet powder within the cavity. More preferably, the material of the press surfaces has a permeability of 1.001 or less. In contrast, if the press surfaces are made of a Cr—Ni based stainless steel (SUS 304 according to JIS standards and having a permeability of about 1.02 to about 1.06), for example, then the flux density will be relatively high around the center of the cavity, the magnet powder will be concentrated toward that region, and the orientation will be disturbed easily. A BeCu alloy (among other things, a BeCu alloy including 96.9 mass % to 98.2 mass % of Cu and 1.6 mass % to 2.0 mass % of Be) is preferably used.\n\n[0044]A BeCu alloy is also less expensive than a cemented carbide. Also, since the press surfaces are deformed plastically as a result of the pressing process, there is no need to mirror-polish those surfaces. Accordingly, a material that has just been shaped by an electrical discharge, for example, may be used as it is, thus further cutting down the cost advantageously. Furthermore, the BeCu alloy is also machinable easily and can be used effectively as a material for the punches for producing numerous sorts of magnets in small quantities. It should be noted that even when the BeCu alloy is used, the pressing process could be carried out repeatedly up to about 1,000 shots, for example.\n\n[0045]Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. In the following illustrative preferred embodiments, the two press surfaces are both supposed to be curved. However, the present invention is in no way limited to those specific preferred embodiments.\n\nPress Machine\n\n[0046]FIGS. 1(a) and 1(b) illustrate the main portion of a powder press machine 10 according to this preferred embodiment. The press machine 10 shown in FIG. 1 includes a die 12 with a through hole (i.e., die hole) 12a to define a cavity and an upper punch 14 and a lower punch 16 for compressing a magnetic powder 18 within the through hole. The end of the upper punch 14, including its compression axis, has a convex cross-sectional shape, while the end of the lower punch 16 has a concave cross-sectional shape. A die set, consisting of the die 12, upper punch 14 and lower punch 16, is connected to a driver (not shown) so as to perform a vertical motion as required for a pressing process. The press machine 10 of this preferred embodiment operates in basically the same way as any known press machine.\n\n[0047]The shape of the die set for use in this preferred embodiment is designed so as to produce an arched thin-plate rare-earth magnet 20 as shown in FIG. 2. This rare-earth magnet 20 is magnetized parallel to the arrow A shown in FIG. 2 (i.e., in the pressing direction). The rare-earth magnet 20 shown in FIG. 2 may be used as a part of a motor or any other rotating machine. When the magnet 20 is used for a motor, the shape of the magnet 20 is preferably designed so as to produce a skew and thereby reduce cogging torque.\n\n[0048]Look at FIG. 1(a) again.\n\n[0049]The cavity is formed over the upper portion of the lower punch 16 that has been partially inserted into the through hole 12a of the die 12, and is filled with the magnetic powder 18. The cavity is a compacting space to be defined by the press surface 16a of the lower punch 16 and the inner surface of the through hole 12a. \n\n[0050]The powder is loaded into the cavity by transporting a feeder box (not shown), which is filled with the magnetic powder, to over the cavity and dropping the powder into the cavity through the bottom (opening) of the feeder box. The cavity cannot be filled with the powder uniformly just by letting the powder drop due to its gravitation. Accordingly, the magnetic powder 18 is preferably stuffed into the cavity by driving a shaker (not shown), provided inside of the feeder box, horizontally (see Japanese Laid-Open Publication No. 2000-248301 mentioned above).\n\n[0051]While the feeder box is retreating from over the cavity, the top of the magnetic powder 18 is sliced off with the bottom edge of the feeder box, thereby loading a predetermined amount of powder 18 to be compacted into the cavity highly precisely. In the meantime, the surface of the magnetic powder 18 loaded may be partially tilted with respect to the surface of the die 12.\n\n[0052]This press machine 10 is characterized in that the press surfaces 14a and 16a of the upper and lower punches 14 and 16 are made of a BeCu alloy (e.g., BC-2 produced by Sumitomo Special Metals Co., Ltd). The BeCu alloy is a non-magnetic material with a Vickers hardness higher than 200 but equal to or lower than 450 and a permeability of 1.001 or less. A BeCu alloy including 96.9 mass % to 98.2 mass % of Cu and 1.6 mass % to 2.0 mass % of Be satisfies these Vickers hardness and permeability ranges.\n\n[0053]In the press machine 10 of this preferred embodiment, the press surfaces 14a and 16a are fully made of the BeCu alloy. Accordingly, the disturbance in the orientation of the magnetic powder 18 can be minimized effectively as will be described later. In this example, the press surfaces 14a and 16a are completely made of the BeCu alloy. However, the effects of reducing the disturbance in the orientation of the magnetic powder 18 are achievable if at least one of the two press surfaces 14a and 16a has a region that is made of the BeCu alloy (i.e., a first region).\n\n[0054]It should be noted that even when the press surfaces 14a and 16a are fully made of the BeCu alloy, just the press surfaces 14a and 16a, not the whole upper and lower punches 14 and 16, need to be made of the BeCu alloy. Nevertheless, to achieve a sufficient degree of plastic deformation, portions with a thickness of about 2 mm or more, including the press surfaces, are preferably made of the BeCu alloy. Normally, if the press surfaces having predetermined shapes are made of a BeCu alloy block, these conditions are satisfied easily. Since the BeCu alloy has some elasticity, a clearance of about 5 μm to about 60 μm is preferably provided between the side surfaces of the upper punch 14 and through hole 12a and/or between the side surfaces of the lower punch 16 and through hole 12a. \n\n[0055]When the cavity has been filled with the magnetic powder 18, the upper punch 14 starts to be lowered. The press surface 14a of the upper punch 14 presses the upper surface of the underlying powder 18 as shown in FIG. 1(b). After the magnetic powder 18 has been completely enclosed by the upper punch 14, lower punch 16 and die 12, a magnetic field generating coil (not shown) applies an aligning magnetic field to the powder 18 in the cavity. The magnetic flux is lead into the upper and lower punches 14 and 16, thereby making the direction of the aligning magnetic field within the cavity identical with the pressing direction (i.e., the direction in which the upper punch operates). Under this aligning magnetic field, the powder particles being pressed are aligned with the direction of the magnetic field. The aligning magnetic field preferably has a strength of 0.5 MA/m to 2.0 MA/m. The aligning magnetic field may be either a static magnetic field or a pulse magnetic field.\n\n[0056]With the aligning magnetic field applied to the powder, the magnetic powder within the cavity is compressed and compacted by the upper and lower punches 14 and 16, thereby making a powder compact 24. In the course of this pressing process, the particles of the magnetic powder 18 being pressed receive different stresses (or pressures) depending on their locations. After the compact 24 has been obtained, the upper punch 14 will be raised and the lower punch 16 will push the compact 24 upward, thereby extracting the compact 24 from the die hole 12a. \n\n[0057]FIG. 3(a) schematically illustrates how the magnetic powder particles 18a are oriented in the initial stage of a pressing process performed by a conventional press machine. On the other hand, FIG. 3(b) schematically illustrates how the magnetic powder particles 18a are oriented in the late stage of the pressing process.\n\n[0058]The respective magnetic powder particles 18a under the aligning magnetic field are not only oriented toward the direction of the aligning magnetic field but also are strongly coupled together magnetically. As a result, the powder particles 18a are aligned with the direction of the aligning magnetic field as shown in FIG. 3(a). As the distance between the upper and lower punches 14′ and 16′ is decreased with the aligning magnetic field applied, non-uniform pressures (or stresses) are applied to the respective portions of the powder being pressed because the punch surfaces 14a′ and 16a′ are curved. However, if the press surfaces 14a′ and 16a′ are made of a much harder cemented carbide and are mirror-polished smooth surfaces, then the powder particles will slide on the smooth press surfaces 14a′ and 16a′ laterally (i.e., directions including a component perpendicular to the pressing direction). As a result, the orientation is disturbed as shown in FIG. 3(b).\n\n[0059]In contrast, according to this preferred embodiment, such sliding of the powder particles in the vicinity of the press surfaces is reduced significantly, thereby minimizing the disturbance of the orientation as shown in FIGS. 4(a) and 4(b). The reason is as follows. The press surfaces 14a and 16a (made of the BeCu alloy) of the upper and lower punches 14 and 16 are deformed plastically under the forces received from the powder particles 18a. As a result, as schematically shown in FIG. 5, fine unevenness is created on the BeCu alloy press surface 16a of the lower punch 16. This unevenness is represented by a surface roughness Ra of 0.05 μm to 12.5 μm. The press surface 16a is illustrated in FIG. 5. However, a similar unevenness is created on the press surface 14a, too. Such fine unevenness created on the press surfaces 14a and 16a reduce the sliding of the powder particles 18a significantly, thereby minimizing the disturbance of the orientation.\n\n[0060]As described above, the magnetic powder particles 18a are magnetically coupled together under the magnetic field. Accordingly, the motion of the powder particles inside of the cavity is dominated by that of the powder particles in the vicinity of the press surfaces 14a and 16a. For that reason, just by deforming the press surfaces 14a and 16a plastically in accordance with the shapes of the powder particles 18a contacting with the press surfaces 14a and 16a, the decrease in the degree of alignment can be minimized for all of the powder particles 18a within the cavity.\n\n[0061]It should be noted that the unevenness of the press surfaces 14a and 16a is transferred onto the surface of the resultant compact 24. However, by polishing the surface of the magnet after that depending on the necessity, such transferred patterns can be removed easily and the magnet surface can be smoothed out.\n\n[0062]In the preferred embodiment described above, the press surfaces 14a and 16a are fully made of the BeCu alloy. Alternatively, as shown in FIGS. 6(a) through 6(d), some region(s) (i.e., first region(s)) 16b of the press surface 16a may be made of the BeCu alloy, while the other region(s) (i.e., second region(s)) 16c may be made of a non-magnetic cemented carbide (e.g., WC—Ni with a Vickers hardness of 1,200 and a permeability of 1.0003) or a high manganese steel (with a Vickers hardness of 460 and a permeability of 1.004). Naturally, the press surface 14a, as well as the press surface 16a, may also include the first and second regions.\n\n[0063]The Vickers hardness of the material of the second region 16c may be higher than that of the material of the first region, may exceed 450, and is preferably 700 or more. If a material with a Vickers hardness of 700 or more is used, then the material is hardly worn out even with continuous use and may be used over and over again by reforming the first region only. As described above, the press surface 16a is preferably made of material with a permeability of 1.01 or less. Accordingly, the second region 16c is also preferably made of a material with a permeability of 1.01 or less. The permeability is more preferably 1.001 or less.\n\n[0064]On the press surface 16a, the first and second regions 16b and 16c may be arranged in various patterns including those illustrated in FIGS. 6(a) through 6(d), for example. Specifically, as shown in FIG. 6(a), a plurality of first regions 16b may be uniformly arranged as small islands on the front of the press surface 16a. Alternatively, as shown in FIGS. 6(b) through 6(d), the first region(s) 16b may be either selectively provided or concentrated where the orientation of the magnetic particles is easily disturbed. If a plurality of first regions 16b are provided, the size and shape of each first region 16b are not particularly limited but may be appropriately determined according to the method of forming the press surface 16a. \n\n[0065]The region where the orientation of the magnetic particles is easily disturbed shifts according to the shape of the press surface 16a (and/or the press surface 14a), the relationship between the direction of the aligning magnetic field and the pressing direction, and the direction in which an agitator moves when the powder is loaded by the slicing technique. Accordingly, the location(s) of the first region(s) 16b may be determined in view of these factors. In the illustrated parallel pressing process, the orientation is disturbed particularly easily in the peripheral regions of the press surface 16a with large tilt angles. Accordingly, in the examples illustrated in FIGS. 6(b) through 6(d), the first regions 16b are provided in such regions of the press surface 16a. In this case, the tilt angle of the press surface 16a is defined with a plane perpendicular to the pressing direction (which is normally a horizontal plane) used as a reference plane.\n\n[0066]The first region(s) 16b may be provided on the press surface 16a by the following method, for example. Specifically, the body portion of the lower punch 16 may be formed with the material of the second region(s) 16c (e.g., a non-magnetic cemented carbide). Then, holes or grooves may be provided in the regions to be the first regions 16b and then the BeCu alloy may be injected into, or welded with, those holes or grooves. To minimize the disturbance in the orientation of the powder particles, the BeCu alloy making the first regions 16b may have a thickness of at least several μm. To achieve a sufficient degree of plastic deformation, the thickness of the BeCu alloy is preferably 2 mm or more. The thickness of the BeCu alloy may be appropriately determined by the specific method of forming the first regions 16b, for example.\n\n[0067]In forming a C- or arched compact for use in a motor, at least a portion of the press surface 16a that will make the convex surface of the compact is preferably made of the BeCu alloy. Then, the orientation disturbance can be minimized and the cogging torque can be reduced effectively.\n\nMethod of Making Alloy Powder\n\n[0068]The present invention can be used effectively to produce a rare-earth sintered magnet and is particularly effective in producing an R-T-(M)-B based high-performance rare-earth sintered magnet.\n\n[0069]Cast flakes of an R-T-(M)-B based rare-earth magnet alloy are prepared by a known strip-casting process. Specifically, an alloy, having a composition consisting of 30 wt % of Nd, 1.0 wt % of B, 1.2 wt % of Dy, 0.2 wt % of Al, 0.9 wt % of Co and Fe and inevitable impurities as the balance, is melted by a high-frequency melting process, thereby obtaining a molten alloy. The molten alloy is maintained at 1,350° C. and then rapidly cooled by a single roller process to obtain alloy cast flakes with a thickness of 0.3 mm. In this case, the conditions of the rapid cooling process include a roller peripheral velocity of about 1 m/s, a cooling rate of 500° C./min and a supercooling rate of 180° C. The rapid cooling rate is defined at 102° C./s to 104° C./s.\n\n[0070]The rapidly solidified alloy obtained in this manner has a thickness of 0.03 mm to 10 mm. The alloy includes R2T14B crystal grains with a minor-axis size of 0.1 μm to 100 μm and a major-axis size of 5 μm to 500 μm and R-rich phases dispersed on the grain boundary of the R2T14B crystal grains. The thickness of the R-rich phases is 10μm or less. A method of making a material alloy by the strip-casting process is disclosed in U.S. Pat. No. 5,383,978, for example. The R-T-(M)-B based rare-earth magnet alloy powder has an elongated shape with a high aspect ratio and exhibits poor flowability (or compactibility) in the compressing process.\n\n[0071]Next, the coarsely pulverized material alloy is loaded into material packs, which are subsequently put on a rack. Thereafter, the rack loaded with the material packs is transported to the front of a hydrogen furnace using a material transporter and then', '技术领域 \n\n [0001] 粉末压制机及磁铁的制造方法技术领域本发明涉及粉末压制机及磁铁的制造方法。 更具体地,本发明涉及一种稀土烧结磁体的制造方法以及一种用于制造这种磁体的粉末压制机。 \n\n 背景技术 \n\n [0002] 当前广泛用于各种应用中的稀土烧结磁体包括基于稀土钴的磁体和基于稀土铁硼的磁体。 其中,基于稀土-铁-硼的磁体(在本文中将被称为“基于RT-(M)-B的磁体”,其中R是包括Y的稀土元素之一,T是 单独的Fe或Fe,Co和/或Ni,M的混合物是添加元素(例如,Al,Ti,Cu,V,Cr,Ni,Ga,Zr,Nb,No,In,Sn中的至少一种 Hf,Ta和W)和B要么是单独的硼,要么是硼和碳的混合物)越来越多地用于各种电子设备中。 这是因为基于R-T-(M)-B的磁体比各种其他类型的磁体具有更高的最大能量乘积,但是相对便宜。 \n\n [0003] 随着这些稀土烧结磁体的应用扩展,越来越需要生产各种形状的磁体。 例如,为了生产高性能的电动机,需要许多具有弯曲表面的强各向异性磁体。 为了生产这样的各向异性磁体,需要通过压制已经在磁场下对准的磁性粉末来将粉末压块压制成期望的形状。 诸如电动机的高性能旋转机器使用多个具有C形或弓形横截面的薄板磁体。 仅通过增加磁体的磁力不能充分地改善这种旋转机器的性能。 另外,磁体表面附近的最终磁体形状和磁场分布也必须与设计相同。 \n\n [0004] 在现有技术中,压机的一对冲头具有弯曲的压制表面,从而获得具有期望的弯曲表面的粉末压块。 常规的冲头可以由硬质合金(例如,WC-Ni基合金)制成,并且其冲压表面可以被镜面抛光。 \n\n [0005] 然而,本发明人通过实验发现并证实,如果压制表面是镜面抛光的弯曲表面,而在取向磁场下单向压制磁粉,则磁粉的取向受到干扰并且所得的磁体性能不会 超好的。 特别是当按压方向与对准磁场的方向基本相同时,这个问题就非常明显。 \n\n [0006] 如果永磁体由这种具有受干扰的取向的紧凑体制成并用于制造电动机,则电动机的转矩将产生不可忽略的齿槽效应。  “转矩齿槽效应”是由电动机的磁路的磁阻随着转子的旋转位置的变化而引起的转矩变化。 该转矩变化的大小通常很小。 但是,例如,如果在动力转向电机中出现齿槽转矩现象,那么这种变化对于某些驾驶员可能就非常敏感。 当在每个磁体的凸部(即,电动机的面对线圈的部分)中存在这种扰动的取向时,该转矩齿槽效应变得更加明显。 \n\n [0007] 上面提到的问题是,已经在磁场下对准并且现在被单轴压制的磁粉可能具有受干扰的取向,这不仅在压制表面弯曲时而且在两个压制表面之一具有区域时也会出现。 相对于按压方向倾斜。 在各种形状的磁体的制造过程中都会发生这种现象。 \n\n [0008] 另外,切片技术通常用作用磁性粉末填充空腔的方法。 例如,如日本特开2000-248301号公报中所公开的,将供料盒(或供料杯)在腔体上滑动,利用粉末的重量将供料盒中的粉末装载到腔体中 本身,被装载的磁性粉末的上部通过设置在供料箱13内的诸如搅拌器(也称为“摇床”)的一些按压装置向下按压。 \n\n [0009] 但是,通过这种切片技术加载的磁粉表面并不总是平行于模具的表面(即腔体的底部),而是可以沿搅拌器的方向倾斜(或 进纸匣)移动甚至缠绕。 在那种情况下,即使在两个相互平行的压紧表面之间压制磁粉,上压紧表面的至少一部分(即,上冲头的表面)也倾斜地与磁粉的表面接触。 如果在这种状态下对已经在磁场下对准的磁粉进行加压,则如上所述,由于压缩磁粉的运动,加压表面附近的磁粉颗粒也将受到干扰。 \n\n 发明内容 \n\n [0010] 为了克服上述问题,本发明的目的是提供一种压制机,该压制机能够按期望地使磁粉致密化,并且提供了一种磁体的制造方法,其使磁粉取向的干扰最小化。  。 \n\n [0011] 根据本发明的压力机包括:具有限定腔的通孔的模具; 第一挤压表面和第二挤压表面,用于挤压装载在腔体中的磁粉。 磁场产生装置,用于向空腔中的磁性粉末施加对准磁场。 第一和第二挤压表面中的至少一个具有第一区域,该第一区域由维氏硬度高于200但等于或低于450的第一材料制成,从而实现了上述目的。 \n\n [0012] 至少一个压制表面可以进一步具有第二区域,该第二区域由具有比第一材料更高的维氏硬度的第二材料制成。 \n\n [0013] 在一个优选的实施方式中,至少一个挤压表面具有相对于挤压方向倾斜的区域。 \n\n [0014] 第一材料和第二材料的渗透率优选为1.01或更小,更优选为1.001或更小。 \n\n [0015] 第一材料优选是BeCu合金。 \n\n [0016] BeCu合金优选包含96.9质量%至98.2质量%的Cu和1.6质量%至2.0质量%的Be。 \n\n [0017] 在一优选的实施方式中,至少一个压榨表面是弯曲的。 \n\n [0018] 根据本发明的磁体的制造方法包括以下步骤:制备磁粉;以及将磁粉制备成粉末。 将磁粉装入腔中; 通过向腔中的磁粉施加对准磁场来对准磁粉; 并在两个相对的压制表面之间单轴压制取向的磁粉以制成致密物。 两个压制表面中的至少一个具有相对于加载的磁性粉末的表面和/或压制方向倾斜的区域,并且还具有第一区域,该第一区域由维氏硬度为 大于200但等于或小于450,从而实现上述目的。 \n\n [0019] 至少一个压制表面可以进一步具有第二区域,该第二区域由具有比第一材料更高的维氏硬度的第二材料制成。 \n\n [0020] 第一材料和第二材料的渗透率优选为1.01或更小,更优选为1.001或更小。 \n\n [0021] 第一材料优选是BeCu合金。 \n\n [0022] BeCu合金优选包含96.9质量%至98.2质量%的Cu和1.6质量%至2.0质量%的Be。 \n\n [0023] 在一种优选的实施方式中,至少一个挤压面是弯曲的。 \n\n [0024] 单轴压制的步骤可以是制造具有C形或拱形横截面的压块的步骤。 \n\n [0025] 在另一个优选的实施方案中,通过切片技术将磁性粉末装载到空腔中。 磁性粉末优选具有2μm至10μm的平均粒度(即,FSS粒度)。 \n\n [0026] 在又一优选实施例中,对准磁场平行于按压方向。 对准磁场的强度优选为0.5MA / m至2.0MA / m。 对准磁场可以是静磁场或脉冲磁场。 \n\n [0027] 在又一优选实施方式中,磁性粉末包括稀土合金粉末。 \n\n [0028] 根据本发明的电动机包括通过上述方法之一制造的磁体。 \n\n 附图说明 \n\n [0029] 无花果 1( a )和 1 ( b )是粉末压制机主要部分的示意图 10  根据优选实施例。 \n\n [0030] 图。 图2是作为本发明的优选实施方式制造的弓形稀土类磁铁的立体图。 \n\n [0031] 图。  3( a 图1是示意性地示出在通过传统压机进行的压制处理步骤的早期阶段中的粉末的状态的截面图,图3是示意性地示出在压制步骤的早期阶段的粉末的状态的剖视图。  3( b 图2是示意性地示出在加压处理步骤的后期阶段的粉末状态的截面图。 \n\n [0032] 图。  4( a 图1是示意性地示出根据优选实施例的在通过压制机执行的压制处理步骤的早期阶段中的粉末的状态的截面图,并且 4( b 图2是示意性地示出在加压处理步骤的后期阶段的粉末状态的截面图。 \n\n [0033] 图。 图5是示意性地示出下冲头如何如何的透视图 16  在优选的实施方式中,压制机的外观看起来像在压制工序之后。 \n\n [0034] 无花果 6( a ), 6 ( b ), 6 ( c )和 6 ( d )是示意性地示出下冲头的透视图 16  可以在本发明的各种优选实施方式中使用。 \n\n [0035] 图。  7( a 图2是表示由磁体制成的电动机的齿槽转矩的曲线图,该齿槽转矩代表本发明的具体示例。  7( b )是表示由磁铁制成的电动机的齿槽转矩的曲线图,该电动机的齿槽转矩代表比较例。 \n\n 实施本发明的最佳模式 \n\n [0036] 在根据本发明的压制机中,用于压制磁性粉末颗粒的两个压制表面中的至少一个在磁场下在空腔中排列,该压制表面具有由材料制成的区域(第一区域)( 维氏硬度大于200但等于或小于450的维氏硬度。在此范围内,压制表面的第一区域在压制磁性粉末颗粒的力作用下发生塑性变形,从而产生精细的 与压制表面的第一区域中的磁性粉末颗粒的形状相对应的不均匀性。 在压制表面的第一区域中形成的细微不平度起着捕获磁性粉末颗粒并防止其移动的作用。 因此,如果压制表面的经常受到取向干扰的部分包括第一区域,则可以使压制表面的第一区域附近的磁性粉末颗粒的取向扰动最小化,并且可以将粉末状的粉末压入。 压块可以平行于对准磁场的方向对准。 在这种情况下,两个挤压表面中的至少一个可以具有第一区域。 除第一区域之外的区域(即第二区域)可以由维氏硬度比第一材料高的材料(即第二材料)制成。 \n\n [0037] 压粉表面附近的磁性粉末颗粒的取向的扰动也由于磁性相互作用而影响成形体内部的均匀磁性粉末颗粒。 结果,压粉体内的粉末颗粒的取向方向不再与取向磁场的方向平行,并且所得烧结磁体的磁性能劣化。 但是,根据本发明,可以使磁性粉末颗粒的取向的这种干扰最小化。 \n\n [0038] 特别地,在取向磁场的方向与加压方向相同的所谓的“平行加压”过程中,磁性粉末颗粒由于从加压表面施加的力而容易垂直于加压方向移动。 由此产生的取向扰动严重影响了烧结磁体的磁性能。 因此,本发明的压力机可以在这种情况下特别有效地使用。 \n\n [0039] 当压紧表面具有相对于压紧方向倾斜的区域时(例如,当压紧表面自身倾斜时),已经加载到腔体中的磁性粉末颗粒在压紧表面施加的力的作用下特别容易移动。 相对于压制方向)或压制表面弯曲时。 应当注意,短语“压制表面相对于压制方向倾斜”是指压制表面不垂直于压制方向。 \n\n [0040] 尤其是当制造具有C形或弓形横截面的压块(例如,用于电动机的烧结磁体)时,两个压制表面都弯曲并且具有相互不同的形状(即,在压制中采用的横截面形状 方向)。 因此,在两个压制表面的两个表面上的取向常常被打乱。 在那种情况下,两个挤压表面均优选由维氏硬度落入上述范围内的材料制成。 \n\n [0041] 即使两个压制表面是彼此平行的平面,已经装入腔中的磁性粉末的表面也可能不是平坦的。 在这种情况下,与磁性粉末的表面接触的挤压表面也倾斜。 即使这样,通过使用由维氏硬度在上述范围内的材料制成的压制表面,也可以使磁性粉末颗粒的取向的干扰最小化。 因此,当通过例如可大量生产的切片技术用磁性粉末材料填充空腔时,可以实现本发明的效果。 \n\n [0042] 应当注意,如果压制表面的材料具有超过450的维氏硬度,则压制表面将不能充分良好地塑性变形以达到充分减小取向干扰的效果。 然而,如果维氏硬度为200或更小,则所得压块的形状将与预定形状有些不同。 因此,可能需要更长的时间来执行使成形体成形的后续处理步骤,或者压榨表面的寿命可能比预期的要短。 考虑到压坯的形状精度和冲头(或压制表面)的寿命,更优选使用维氏硬度至少为250的材料。 \n\n [0043] 如果压制表面由磁导率等于或小于1.01的材料制成,则对准磁场完全不受该材料的影响。 因此,可以将具有预定方向的对准磁场施加到腔体内的磁体粉末。 更优选地,压制表面的材料的磁导率为1.001或更小。 相反,例如,如果压制表面由Cr-Ni基不锈钢(根据JIS标准的SUS 304,并且具有约1.02至约1.06的磁导率)制成,则通量密度将在中心附近相对较高。 在空腔的内部,磁铁粉末将向该区域集中,并且容易干扰取向。 优选使用BeCu合金(其中,BeCu合金包括96.9质量%至98.2质量%的Cu和1.6质量%至2.0质量%的Be)。 \n\n [0044] BeCu合金也比硬质合金便宜。 另外,由于压制过程导致压制表面塑性变形,因此不需要镜面抛光那些表面。 因此,可以原样使用刚刚通过放电成型的材料,因此有利地进一步降低了成本。 此外,BeCu合金还易于加工,并且可以有效地用作冲头的材料,以少量生产多种磁体。 应当注意,即使当使用BeCu合金时,例如也可以重复地进行压制工艺,直到大约1000次。 \n\n [0045] 在下文中,将参考附图描述本发明的优选实施例。 在下面的说明性优选实施例中,两个挤压表面都假定是弯曲的。 然而,本发明决不限于那些特定的优选实施例。 \n\n 压机 \n\n [0046] 无花果 1( a )和 1 ( b )展示了粉末压制机的主要部分 10  根据该优选实施例。 压机 10  如图所示。  1个包含模具 12  有通孔(即模孔) 12 a  定义型腔和上冲头 14  和一个较低的拳 16  用于压缩磁粉 18  在通孔内。 上拳尾 14 ,包括其压缩轴,具有凸的横截面形状,而下冲头的末端 16  具有凹形的横截面形状。 模具,由模具组成 12 ,上拳 14  下拳 16 连接到驱动器(未示出)上,以执行加压过程所需的垂直运动。 压机 10  该优选实施例的第二实施例以与任何已知压机基本相同的方式操作。 \n\n [0047] 设计用于该优选实施例中的模具的形状,以便产生弓形的薄板稀土磁体。 20  如图 2.这种稀土磁铁 20  平行于图1所示的箭头A被磁化。  2(即按方向)。 稀土磁铁 20  如图所示。 可以将图2中的电动机用作电动机或任何其他旋转机械的一部分。 当磁铁 20  用于电动机,磁铁的形状 20  最好设计成产生偏斜从而减小齿槽转矩。 \n\n [0048] 看图。  1( a )。 \n\n [0049] 空腔形成在下冲头的上部上方 16  已经部分插入通孔的 12 a  死的 12 ,并充满了磁粉 18 。 空腔是由压榨表面限定的压实空间 16 a  下冲头 16  和通孔的内表面 12 a.  \n\n [0050] 通过将填充有磁性粉末的进料箱(未示出)运送到空腔上方,并通过进料箱的底部(开口)将粉末滴入空腔中,从而将粉末装载到空腔中。 仅仅通过使粉末由于重力而掉落,就不能将粉末均匀地填充到空腔中。 因此,磁粉 18  优选地,通过水平驱动设置在进料箱内部的振动器(未示出)将砂纸塞入腔中(参见上述日本特开2000-248301号公报)。 \n\n [0051] 当进纸器盒从腔体上方退回时,磁性粉末的顶部 18  用进料箱的底部边缘切成薄片,从而装入预定量的粉末 18  高度精确地压实到型腔中 同时,磁粉的表面 18  负载可能会相对于芯片的表面部分倾斜 12 。 \n\n [0052] 此压机 10  其特点是压力机表面 14 a  和 16 a  上下冲头 14  和 16 由BeCu合金制成(例如,住友特殊金属有限公司生产的BC-2)。  BeCu合金是维氏硬度大于200但等于或小于450且磁导率小于或等于1.001的非磁性材料。 包含96.9质量%至98.2质量%的Cu和1.6质量%至2.0质量%的Be的BeCu合金满足这些维氏硬度和磁导率范围。 \n\n [0053] 中压机 10  在这个优选实施例中,压力机表面 14 a  和 16 a  完全由BeCu合金制成。 因此,磁粉取向的干扰 18  如将在后面描述的那样,可以有效地最小化“最小化”。 在此示例中,压力机表面 14 a  和 16 a  完全由BeCu合金制成。 但是,减少磁粉取向干扰的效果 18  如果两个压机表面中的至少一个是可实现的 14 a  和 16 a  具有由BeCu合金制成的区域(即,第一区域)。 \n\n [0054] 应该注意的是,即使压机表面 14 a  和 16 a  完全由BeCu合金制成,只是压制表面 14 a  和 16 a ,而不是整个上下拳 14  和 16 ,必须由BeCu合金制成。 然而,为了获得足够程度的塑性变形,包括压制表面的厚度约为2mm或更大的部分优选地由BeCu合金制成。 通常,如果具有预定形状的压制表面由BeCu合金块制成,则容易满足这些条件。 由于BeCu合金具有一定的弹性,因此优选在上冲头的侧面之间设置约5μm至约60μm的间隙。 14  和通孔 12 a  和/或下冲头的侧面之间 16  和通孔 12 a.  \n\n [0055] 当空腔中充满了磁粉后 18 ,上拳 14  开始降低。 压面 14 a  上冲头 14  按压底层粉末的上表面 18  如图 1( b )。 后磁粉 18  已完全被上冲头封闭 14 下冲头 16  死了 12 ,磁场产生线圈(未显示)向粉末施加对准磁场 18  在腔中。 磁通量进入上下冲头 14  和 16 因此,使腔内对准磁场的方向与按压方向(即,上冲头的操作方向)相同。 在该对准磁场下,被压制的粉末颗粒与磁场方向对准。 对准磁场的强度优选为0.5MA / m至2.0MA / m。 对准磁场可以是静磁场或脉冲磁场。 \n\n [0056] 通过将对准磁场施加到粉末上,空腔中的磁性粉末被上下冲头压缩和压实 14  和 16 从而使粉末紧凑 24 。 在压制过程中,磁性粉末的颗粒 18  被按压的位置不同,它们承受的压力也不同。 后紧凑 24  已经获得,上拳 14  将被抬起,下部冲头 16  将推紧凑 24  向上,从而提取压块 24  从模具孔 12 a.  \n\n [0057] 图。  3( a )示意性地说明了磁性粉末颗粒 18 a  在常规压制机执行的压制过程的初始阶段中,它们被定向。 另一方面,  3( b )示意性地说明了磁性粉末颗粒 18 a  在压榨过程的后期阶段进行定位。 \n\n [0058] 各个磁性粉末颗粒 18 a  在对准磁场下的磁场不仅朝向对准磁场的方向取向,而且还牢固地磁性耦合在一起。 结果,粉末颗粒 18 a  如图3所示,它们与对准磁场的方向对准。  3( a )。 作为上下冲头之间的距离 14 \'和 16 ′随着施加的对准磁场而减小,由于冲压表面使不均匀的压力(或应力)施加到被压粉末的各个部分上 14 a \'和 16 a \'是弯曲的。 但是,如果压力机表面 14 a \'和 16 a \'由硬度更高的硬质合金制成,并且是镜面抛光的光滑表面,然后粉末颗粒将在光滑的压榨表面上滑动 14 a \'和 16 a 横向”(即,包括垂直于挤压方向的分量的方向)。 结果,如图3所示,取向受到干扰。  3( b )。 \n\n [0059] 相反,根据该优选实施例,粉末颗粒在压制表面附近的这种滑动被显着减小,从而使取向的干扰最小化,如图3和4所示。  4( a )和 4 ( b )。 原因如下。 压机表面 14 a  和 16 a  (由BeCu合金制成)上下冲头 14  和 16  在粉末颗粒承受的力作用下发生塑性变形 18 a 。 结果,如图2中示意性所示。  5,在BeCu合金压制表面上产生细微的不均匀性 16 a  下冲头 16 。 该不均匀度由0.05μm至12.5μm的表面粗糙度Ra表示。 压面 16 a  在图2中示出。  5.但是,在压力机表面也会产生类似的不平整 14 a 也一样 在压机表面上产生的细微不平整 14 a  和 16 a  减少粉末颗粒的滑动 18 a  显着地减小取向的干扰。 \n\n [0060] 如上所述,磁性粉末颗粒 18 a  在磁场下被磁耦合在一起。 因此,腔室内的粉末颗粒的运动主要由压制表面附近的粉末颗粒的运动决定。 14 a  和 16 a 。 因此,只需使压机表面变形即可 14 a  和 16 a  塑性地根据粉末颗粒的形状 18 a  与压机表面接触 14 a  和 16 a ,可以将所有粉末颗粒的取向度降低降至最低 18 a  在腔内。 \n\n [0061] 应当注意,压制表面的不平整 14 a  和 16 a  被转移到所得压块的表面上 24 。 但是,此后根据需要对磁体的表面进行抛光,可以容易地去除这样的转印图案,并且可以使磁体表面平滑。 \n\n [0062] 在上述优选实施例中,压制表面 14 a  和 16 a  完全由BeCu合金制成。 替代地,如图1至图4所示,图1和图2示出了本发明的实施例。  6( a )通过 6 ( d ),某些区域(即第一个区域) 16 b  压榨面的 16 a  可由BeCu合金制成,而其他区域(即第二区域) 16 c  可以由非磁性硬质合金(例如维氏硬度为1200,磁导率为1.0003的WC-Ni)或高锰钢(维氏硬度为460,磁导率为1.004)制成。 自然,压机表面 14 a 以及压机表面 16 a ,也可以包括第一和第二区域。 \n\n [0063] 第二区域材料的维氏硬度 16 c  可以比第一区域的材料高,可以超过450,并且优选为700以上。 如果使用维氏硬度为700或更高的材料,则即使连续使用也几乎不会磨损该材料,并且可以仅通过重整第一区域来重复使用该材料。 如上所述,压力机表面 16 a  最好是用磁导率为1.01或更小的材料制成。 因此,第二区域 16 c  还优选地由渗透性为1.01或更小的材料制成。 渗透率更优选为1.001或更小。 \n\n [0064] 在压机表面 16 a ,第一和第二区域 16 b  和 16 c  可以以包括在图1和图2中图示的那些的各种图案来布置。  6( a )通过 6 ( d ), 例如。 具体地,如图1所示,  6( a ),多个第一区域 16 b  可以均匀地排列为压机表面前面的小岛 16 a 。 替代地,如图1至图4所示,图1和图2示出了本发明的实施例。  6( b )通过 6 ( d ),第一个区域 16 b  可以选择性地提供或集中在容易干扰磁性粒子的取向的位置。 如果有多个第一区域 16 b  提供了每个第一区域的大小和形状 16 b  不特别限制,但是可以根据形成压制表面的方法适当地确定。 16 a.  \n\n [0065] 磁性粒子的取向容易受到干扰的区域根据挤压表面的形状而移动 16 a  (和/或压榨表面 14 a ),对准磁场的方向与挤压方向之间的关系以及通过切片技术装载粉末时搅拌器移动的方向之间的关系。 因此,第一区域的位置 16 b  可以根据这些因素来确定。 在所示的平行压制过程中,在压制表面的周边区域中特别容易干扰取向。 16 a  具有大的倾斜角度。 因此,在图1至图3所示的示例中,图2示出了示例。  6( b )通过 6 ( d ),第一个区域 16 b  设置在压力机表面的此类区域中 16 a 。 在这种情况下,压力面的倾斜角度 16 a  用垂直于按压方向的平面(通常是水平面)定义基准平面。 \n\n [0066] 第一个地区 16 b  可以设置在压力机表面 16 a  例如,通过以下方法。 具体而言,下冲头的主体部分 16  可以由第二区域的材料形成 16 c  (例如非磁性硬质合金)。 然后,可以在将成为第一区域的区域中设置孔或凹槽。 16 b  然后可以将BeCu合金注入或焊接到这些孔或凹槽中。 为了最大程度地减少粉末颗粒取向的干扰,BeCu合金成为第一个区域 16 b  可以具有至少几μm的厚度。 为了获得足够程度的塑性变形,BeCu合金的厚度优选为2mm以上。  BeCu合金的厚度可以通过形成第一区域的具体方法适当确定。 16 b , 例如。 \n\n [0067] 在形成用于电动机的C形或拱形压块时,压榨表面的至少一部分 16 a  使压块的凸面成为可能的材料最好由BeCu合金制成。 然后,可以使取向干扰最小化并且可以有效地减小齿槽转矩。 \n\n 合金粉末的制造方法 \n\n [0068] 本发明可有效地用于生产稀土烧结磁体,并且在生产基于R-T-(M)-B的高性能稀土烧结磁体方面特别有效。 \n\n [0069] R-T-(M)-B基稀土磁铁合金的铸造薄片是通过已知的带铸工艺制备的。 具体地,熔化具有由30重量%的Nd,1.0重量%的B,1.2重量%的Dy,0.2重量%的Al,0.9重量%的Co和Fe以及余量为不可避免的杂质组成的合金 通过高频熔融工艺,从而获得熔融合金。 将熔融合金保持在1350℃,然后通过单辊工艺快速冷却以获得厚度为0.3mm的合金铸造薄片。 在这种情况下,快速冷却过程的条件包括约1m / s的辊圆周速度,500℃/ min的冷却速率和180℃的过冷却速率。快速冷却速率定义为10。 2 °C / s至10 4 °C /秒 \n\n [0070] 以这种方式获得的快速凝固的合金具有0.03mm至10mm的厚度。 合金包含R 2 Ť 14 B晶粒的短轴尺寸为0.1μm至100μm,长轴尺寸为5μm至500μm,富R相分散在R的晶界上 2 Ť 14 B晶粒。 富R相的厚度为10μm或更小。 在美国专利No.5,426,641中公开了一种通过带铸法制造材料合金的方法。 例如,美国专利号5,383,978。  R-T-(M)-B基稀土磁体合金粉末具有细长的形状和高的长径比,并且在压缩过程中表现出差的流动性(或致密性)。 \n\n [0071] 接下来,将粗粉碎的合金材料装入材料包中,然后将其放在架子上。 此后,使用材料运输器将装有材料包的架子运输到氢炉的前部,然后引入到氢炉中。 然后,在氢炉中开始氢粉碎过程。 也就是说,将原料合金加热并在氢炉内进行氢粉碎处理。 以这种方式粗粉碎的原料合金优选在合金温度降低到大约室温之后卸载。 然而,即使在合金温度仍然很高时(例如,在40℃至80℃的范围内)卸载材料合金,除非合金暴露于高温下,合金也不会被如此严重地氧化。 空气。 作为该氢粉碎过程的结果,稀土合金被粉碎成约0.1mm至约1.0mm的尺寸。 如上所述,在进行该氢粉碎处理之前,优选将原料合金更粗地粉碎成平均粒径为1mm至10mm的薄片。 \n\n [0072] 通过该氢粉碎工序将原料合金粉碎后,优选将脆性提高的合金粉碎得更细,并使用例如旋转式冷却器等冷却机进行冷却。 如果卸载的物料仍具有较高的温度,则应使用旋转冷却器将物料冷却相当长的时间。 \n\n [0073] 之后,将已经通过旋转冷却器冷却至室温附近的原料粉末进一步通过粉碎机例如喷射式粉碎机进一步细化以制备细的原料粉末。 考虑到所得的磁性能,细粉优选具有2μm至10μm的平均粒径(即,FSSS粒径)。 在该优选实施方式中,使用喷射磨在氮气气氛中将原料粉末精细地粉碎,从而获得平均粒径为约3.5μm的合金粉末。 该氮气气氛中的氧浓度优选低至约10,000ppm。 例如,在日本专利公报第6-6728号中公开了这种喷射式粉碎机。 更具体地,优选通过控制用于精细粉碎过程的大气中的氧化性气体(即,氧气或水蒸气)的浓度,来将包含在精细粉碎的合金粉末中的氧气的重量调整为6,000ppm以下。 这是因为,如果稀土类合金粉末中所含的氧的重量超过6,000ppm,则非磁性氧化物相对于所得到的烧结磁铁的合计百分比过高而无法获得良好的磁特性。 \n\n [0074] 随后,将0.3重量%的润滑剂添加到该合金粉末中并在摇动混合器中混合,从而用润滑剂涂覆合金粉末颗粒的表面。 作为润滑剂,可以使用用石油溶剂稀释的脂肪酸酯。 在该优选实施方案中,己酸甲酯用作脂肪酯,异链烷烃用作石油溶剂。 己酸甲酯和异链烷烃可以例如以1:9的重量比混合。 这种液体润滑剂不仅通过覆盖其表面防止粉末颗粒的氧化,而且还改善了被压制的粉末的排列程度和粉末的致密性(即,可以多么容易地除去所得的致密物)。 \n\n [0075] 应当注意,润滑剂不限于示例类型。 例如,作为脂肪酯的己酸甲酯可以用辛酸甲酯,月桂酸甲酯或月桂酸甲酯代替。 优选的溶剂的实例包括石油溶剂,例如异链烷烃和环烷溶剂。 可以在任何时间添加润滑剂:在精细粉碎过程之前,同时或之后。 代替液体润滑剂或除了液体润滑剂之外,还可以使用固体(干)润滑剂,例如硬脂酸锌。 \n\n [0076] 应当指出,用这种方法制得的粉末具有尖锐的粒度分布,因此显示出差的流动性。 因此,如果粉末在与其取向方向相同的方向上被压缩,则在压制过程中倾向于容易干扰取向。 另外,通过添加润滑剂例如脂肪酯,可以使各粉末粒子更容易取向,但是流动性降低。 结果,由于按压而容易干扰取向。 此外,如果例如施加0.8T至2.0T的高取向磁场以实现高磁性能,则这种取向扰动变得更加明显。 在那种情况下,根据该优选实施例,通过使用具有由BeCu合金制成的压制表面的压制机,可以实现显着的效果。 \n\n 稀土磁铁的制造方法 \n\n [0077] 首先,通过上述方法制备的磁性粉末由图1所示的压制机压实。  1在对准磁场下。 在以这种方式压制和压实粉末之后,通过下冲头将所得粉末压块向上推 16  并从此压机中取出。 此时,反映出印刷表面上的细微不均匀的图案 14 a  和 16 a  在压制过程中已转移到压块表面(与压制表面接触的表面)上 14 a  和 16 a )。 根据该优选实施方式,如图2所示,可以获得几乎没有取向的粉末成形体。  4( b )。 \n\n [0078] 为了更容易且更平稳地从模具中释放压块,可以在将粉末装载到压制表面上之前全部或部分地涂覆脱模剂。 脱模剂优选通过用溶剂稀释脂肪酯而获得。 具体地,优选的脂肪酯的实例包括己酸甲酯,辛酸甲酯,月桂酸甲酯和月桂酸甲酯。 可以使用石油溶剂如异链烷烃作为溶剂。 并且脂肪酯和溶剂可以以1:20至1:1的重量比混合。 任选地,脂肪酸可以包括1.0重量%或更少的花生酸。 \n\n [0079] 接下来,将压块放置在烧结板上(厚度为0.5mm至3mm)。 该板可以由例如钼材料制成。 契约 24  板上的金属被装入烧结盒中。 装有压坯的烧结箱 24  将其运送到烧结炉中并在烧结炉中进行已知的烧结工艺。 作为该烧结过程的结果,压块变成烧结体。 \n\n [0080] 此后,如果需要,对烧结体的表面进行抛光。 在烧结体的表面上,对应于压制表面上的细微凹凸的表面图案 14 a  和 16 a  仍然离开。 这些表面图案的一部分或全部可以通过抛光工艺去除。 在该抛光处理之后或代替该抛光处理,例如,也可以执行用树脂膜覆盖烧结体的表面的处理。 以这种方式,获得了最终产品或稀土磁体。 \n\n [0081] 已经描述了本发明的优选实施例被应用于具有可在电动机或任何其他旋转机械中有效使用的形状的稀土磁体。 然而,本发明决不限于那些特定的优选实施例。 \n\n [0082] 在图1所示的磁体中, 如图2所示,其上表面和下表面都是弯曲的。 然而,即使两个表面中的仅一个是弯曲的,也可以完全实现本发明的效果。 在那种情况下,冲头的形成非弯曲的平坦表面的压制表面可以由与传统的相同的材料制成(例如,硬质合金)。 \n\n [0083] 另外,如已经参考图2描述的那样。  1( a ),磁粉表面 18  通过切片填充技术加载到型腔中的材料可能不平行于模具的表面 12  但朝某个方向或绕组倾斜。 在这种情况下,即使两个挤压表面是相互平行的平面,那些与磁性粉末表面接触的挤压表面也会向其倾斜。 因此,如果使用例如通过对硬质合金进行镜面抛光而获得的传统压制表面,则出现取向干扰问题。 然而,通过使用具有由BeCu合金制成的压制表面的压制机,可以通过与上述相同的机构使磁性粉末颗粒的取向的干扰最小化。 \n\n 示例和比较示例 \n\n [0084] 用压制机压制并压实稀土合金粉末 10  包括压机表面 14 a  和 16 a  如图2所示,由BeCu合金制成(例如,住友特殊金属有限公司生产的BC-2)。 在该示例中,制造压块以使其具有沿图1中的箭头B所示的方向测量的40mm的长度。 在图2中,沿箭头A所示的方向在其中央部分的厚度为7mm,沿垂直于箭头A和B的两个方向在厚度为35mm的宽度下具有致密的密度。  4.30克/厘米 3 。 沿按压方向(即,沿箭头A)施加约1MA / m的对准磁场。 其后,在氩气气氛中将成形体在1050℃下烧结2小时,从而制成磁体。 将该磁体磁化,然后获得磁体表面附近的磁通密度分布。 \n\n [0085] 为了比较的目的,用包括由常规硬质合金制成的压制表面的压制机进行了类似的压制工艺,从而将磁体制成为比较例。 \n\n [0086] 该实施例获得的通量密度分布优于比较例,并且没有显示出由于取向度降低而引起的异常分布。 \n\n [0087] 测量了使用该示例的磁体产生的电动机的齿槽转矩。 结果示于图3。  7( a )。 为了比较,还测量了包括比较例的磁体的电动机的齿槽转矩。 结果示于图3。  7( b )。 \n\n [0088] 从图3和图4所示的结果可以清楚地看出。  7( a )和 7 ( b ),该示例的电动机的齿槽转矩比比较示例的电动机的齿槽转矩足够小。 通过本发明减小电动机的齿槽转矩的原因是,在压制过程中,在成形体中不太可能干扰取向。 \n\n 工业适用性 \n\n [0089] 在本发明的压机中,其压机表面的至少一部分由具有足够的维氏硬度的材料制成。 因此,当粉末在取向磁场下被挤压时,可以防止粉末颗粒在挤压表面上滑动,从而使粉末取向的干扰最小。 \n\n [0090] 通过使用这种压机获得的粉末压块实现均匀的排列,并且由这种压块制成的稀土磁体显示出优异的磁性能。 \n\n [0091] 如果使用通过本发明的方法生产的磁体构造电动机,则可以减小齿槽转矩。');
INSERT INTO `os_patent_instruction_text` VALUES (12954, 22783, '【0001】\n\n【発明の属する技術分野】\n\n本発明は、減磁によって特性の変化し得る永久磁石を含む磁気回路を対象とする磁場解析方法および磁場解析装置に関する。また、本発明は、このような磁場解析方法および装置\n\nを用いて行う永久磁石の製造方法にも関している。\n\n【0002】\n\n【従来の技術】\n\n近年、磁気回路の設計効率向上や小型化を検討するため、コンピュ-タ·シミュレ-ション技術を用いた磁場解析が行われている。このような磁場解析は、種々の形状を備えた永久磁石を多数の微小要素(メッシュ)に分けて評価する有限要素法などの方法を用いて行われる。このような磁場解析技術の向上に伴い、磁気回路内での磁束密度分布やフラックス量を高い精度で計算することが可能になってきた。従来の磁場解析方法は、例えば非特許文献1に記載されている。\n\n【0003】\n\n【非特許文献1】\n\n谷口  康人、他4名、“スキューを考慮した永久磁石モータの三次元磁界解析”、[online]、[平成14年10月2日検索]インターネット\n\n【0004】\n\n【発明が解決しようとする課題】\n\n希土類永久磁石を加熱すると、その磁化が減少する(減磁)。一方、フェライト磁石では、冷却によって減磁が発生する。このような減磁には、常温に戻すと回復する「可逆減磁」と回復しない「不可逆減磁」がある。可逆減磁の量は、磁石の温度に応じて線形的に変化し、その割合を可逆温度係数と言う。一方、不可逆減磁は、加熱または冷却によって減少した磁化のうち、室温に戻しても回復しない減磁のことを言う。\n\n【0005】\n\n例えば100℃で永久磁石を使用した場合において、不可逆減磁が発生した後、磁石温度を常温(20℃)へ低下させても、磁石の磁化は減少したままであり、完全には回復しない。このような減磁が生じると、磁石のヒステリシスカーブ(履歴曲線)の形状が変化することになる。\n\n【0006】\n\n永久磁石を用いた磁気回路について磁場解析を行う場合は、永久磁石の減磁を考慮した磁場解析が必要になる。しかしながら、従来の減磁評価方法では、与えられた動作条件(温度や外部磁場)のもとで永久磁石に減磁が発生するか否かだけが判定されていた。この点を図1から図3を参照しつつ説明する。\n\n【0007】\n\n図1は、板状の永久磁石を示している。図示されている永久磁石は、その厚さ方向に磁化されている。図2は、この永久磁石による磁束線を模試的に示す断面図である。図2からわかるように、磁石の端部近傍からのびる磁束線の磁路は、磁石中央部から伸びる磁束線の磁路に比べて相対的に短い。\n\n【0008】\n\n永久磁石が着磁された後、その永久磁石にはN極とS極が発生するため,図2に示すように、永久磁石の外部ではN極からS極に向かう磁束(磁束線)が形成される。このとき、永久磁石の内部においても、N極からS極に向かう磁束が形成されている。磁石内部に形成される磁束は、永久磁石を減磁させる向きに働くため、このような磁束による磁界は反磁界(自己減磁界)と称されている。反磁界は、N極とS極が近づく程、大きくなる。図1に示す板状の永久磁石の場合、板の面積に対する板厚の比が小さくなるほど、反磁界は大きくなる。\n\n【0009】\n\n図3は、図1に示す永久磁石の減磁曲線(Demagnetization curve)の一部を模式的に示すグラフである。ここで「減磁曲線」とは、永久磁石が飽和磁束密度または飽和磁気分極を示す状態から磁界を単調に変化させて得られる履歴曲線のうち、第2象限および第3象限の部分を意味している。図3では、縦軸が磁束密度B、横軸が外部磁界Hのグラフであ\n\nり、第2象限の部分のみを示している。なお、図3のグラフでは、直線で近似された減磁曲線が描かれているが、本願明細書では、磁石の履歴曲線が少なくとも一部に直線部分を含むような場合でも、その履歴曲線を「B-Hカーブ」と称することとする。\n\n【0010】\n\n図3のグラフでは、 HYPERLINK \"http://member.nifty.ne.jp/BS3/Magnet/\" \\l \"DmgField\" 反磁界Hdに対応するB-Hカーブ上の点( HYPERLINK \"http://member.nifty.ne.jp/BS3/Magnet/Term.html\" \\l \"WorkPoint\" 動作点)が示されている。この動作点における磁束密度の値はBmであり、動作点とグラフの原点とを結ぶ直線は「 HYPERLINK \"http://member.nifty.ne.jp/BS3/Magnet/Term.html\" \\l \"LoadLine\" 動作線」と呼ばれている。動作線の傾きの絶対値は、 HYPERLINK \"http://member.nifty.ne.jp/BS3/Magnet/\" \\l \"Pcoef\" パーミアンス係数Pcと呼ばれている。磁束密度Bmは、 HYPERLINK \"http://member.nifty.ne.jp/BS3/Magnet/\" \\l \"Pcoef\" パーミアンス係数Pcに依存する数値のひとつである。\n\n【0011】\n\n反磁界Hdは、永久磁石に対する外部磁界の有無に係わらず存在するため、外部磁界の印加が無い状態で永久磁石から外部に発生する磁束の密度は、動作点に対応する磁束密度Bmに等しい。一般に、永久磁石の動作点は、磁石の形状や周囲の状況によって変化すると言われているが、厳密には、永久磁石の内部の位置によっても異なる。すなわち永久磁石のパーミアンス係数Pcは、永久磁石の内部において一様ではなく、永久磁石内の位置に応じて異なる値を有している。\n\n【0012】\n\n図2に示すように、磁路が短くなるほど、反磁界Hdは小さく、パーミアンス係数Pcが大きくなるのに対して、磁路が長くなるほど反磁界Hdは大きく、パーミアンス係数Pcは小さくなる。このため、図1に示す形状の永久磁石のパーミアンス係数Pcは、磁石中央部で最も低く、磁石のコーナー部分で最も高くなる。図1において、Pc(min)は、パーミアンス係数Pcが最小となる部位を示し、Pc(max)は、パーミアンス係数Pcが最大となる部位を示している。\n\n【0013】\n\nこのように永久磁石のパーミアンス係数Pcは、永久磁石の内部の位置に応じて異なる。一方、減磁はパーミアンス係数Pcが最小となる部分から発生する。このため、従来の磁場解析法では、コンピュータ·シミュレーションにより、磁石内の各部位(多数の有限要素)について磁束密度Bmを計算し、磁束密度Bmが最も小さくなる部位のパーミアンス係数Pc(min)を算出していた。そして、このようなパーミアンス係数Pc(min)を示す動作線と、使用温度におけるB-Hカーブと比較することにより、この部位が減磁し得るか否かを判断していた。次に、図4を参照しながら、このような従来の減磁評価方法を説明する。\n\n【0014】\n\n図4は、ある永久磁石の常温(20度)におけるB-Hカーブ(実線)と、100℃におけるB-Hカーブ(点線)を示すグラフである。各温度におけるB-Hカーブのデータは、コンピュータのメモリ内に格納され、永久磁石の形状などに関するデータが入力された後、有限要素法によって磁石内の各部位における動作線が特定される。\n\n【0015】\n\n図4のグラフには、2種類の磁石Cおよび磁石Dに関する2本の動作線が示されている。動作線Cは、磁石Cの内部で最もパーミアンス係数Pcが低い部位の動作線であり、動作線Dは、磁石Dの内部で最もパーミアンス係数Pcが低い部位の動作線であると仮定する。また、簡単化のため、B-Hカーブは、磁石Cおよび磁石Dで共通であると仮定する。\n\n【0016】\n\n図4からわかるように、動作線Cと20℃のB-Hカーブおよび100℃のB-Hカーブとの各交点は、いずれも、対応するB-Hカーブの変極点(クニック点)より上側に位置している。このため、パーミアンス係数Pc(min)が大きな磁石Cは、100℃の使\n\n用環境でも減磁しないと評価される。\n\n【0017】\n\n一方、パーミアンス係数Pc(min)が相対的に小さな磁石Dの動作線と20℃のB-Hカーブとの交点は、そのB-Hカーブの変極点(クニック点)より上側に位置しているが、100℃のB-Hカーブとの交点は、そのB-Hカーブの変極点(クニック点)より下側に位置している。このことから、パーミアンス係数Pc(min)が小さな磁石Dは、20℃で減磁しないが、100℃で減磁すると判定される。\n\n【0018】\n\nこのようにして行う従来の磁場解析法によれば、永久磁石内で最もパーミアンス係数の低い部分が減磁するか否かのみを評価していたため、例えば、パーミアンス係数の最も低い部分が永久磁石全体に占める割合が極めて小さく、現実には減磁の問題がほとんど生じないように場合でも、「減磁が発生する」と判定されることがあった。\n\n【0019】\n\nまた、減磁が生じた後の磁束密度分布がどのようになるのかについて、従来の磁場解析方法は何の回答を与えることもできなかった。すなわち、従来の磁場解析方法では、磁石毎に減磁の有無だけを判定していたため、減磁によってフラックス量や磁束密度分布がどのように変化するかを数値解析で求めることができないという問題があった。\n\n【0020】\n\n本発明は、かかる事情に鑑みてなされたものであり、その主な目的は、永久磁石について減磁が生じるか否かだけではなく、減磁後における磁束密度分布などの算出することができる磁場解析方法および装置を提供する。\n\n【0021】\n\n【課題を解決するための手段】\n\n本発明の磁場解析方法は、第1の温度T1における永久磁石のB-Hカーブデータに基づいて、前記永久磁石内の複数の部位におけるパーミアンス係数および/または前記パーミアンス係数に依存する数値を算出するステップと、前記第1の温度T1とは異なる第2の温度T2における前記永久磁石のB-Hカーブデータと前記パーミアンス係数または前記数値とに基づいて、前記第2の温度T2で使用した後の永久磁石における修正B-Hカーブデータを、前記複数の部位の各々について算出するステップとを含む。\n\n【0022】\n\n好ましい実施形態において、前記修正B-Hカーブデータとして、前記第2の温度T2とは異なる温度における修正B-Hカーブデータを算出する。\n\n【0023】\n\n好ましい実施形態において、前記修正B-Hカーブデータを計算機のメモリ内に格納するステップを更に含んでいる。\n\n【0024】\n\n本発明の磁場解析装置は、選択された永久磁石に関する複数の温度におけるB-Hカーブデータを格納するメモリ手段と、演算手段と、を備えた磁場解析装置であって、前記演算手段は、前記メモリ手段に格納されている第1の温度T1における前記永久磁石のB-Hカーブデータに基づいて前記永久磁石内の複数の部位におけるパーミアンス係数および/または前記パーミアンス係数に依存する数値を算出するステップと、前記メモリ手段に格納されている前記第1の温度T1とは異なる第2の温度T2における前記永久磁石のB-Hカーブデータと前記パーミアンス係数または前記数値とに基づいて、前記第2の温度T2で使用した後の永久磁石における修正B-Hカーブデータを、前記複数の部位の各々について算出するステップとを実行する。\n\n【0025】\n\n好ましい実施形態において、前記演算手段は、前記修正B-Hカーブデータを前記メモリ手段に格納する。\n\n【0026】\n\n本発明の磁場解析用プログラムは、コンピュータに対して、第1の温度T1における永久\n\n磁石のB-Hカーブデータに基づいて、前記永久磁石内の複数の部位におけるパーミアンス係数および/または前記パーミアンス係数に依存する数値を算出するステップと、前記第1の温度T1とは異なる第2の温度T2における前記永久磁石のB-Hカーブデータと前記パーミアンス係数または前記数値とに基づいて、前記第2の温度T2で使用した後の永久磁石における修正B-Hカーブデータを、前記複数の部位の各々について算出するステップとを実行させる。\n\n【0027】\n\n好ましい実施形態では、コンピュータに対して、前記修正B-Hカーブデータとして、前記第2の温度T2とは異なる温度における修正B-Hカーブデータを算出させる。\n\n【0028】\n\n好ましい実施形態では、コンピュータに対して、前記修正B-Hカーブデータを計算機のメモリ内に格納するステップを更に実行させる。\n\n【0029】\n\n本発明の磁場解析用追加モジュールプログラムは、磁場解析用プログラムが、コンピュータに対して、第1の温度T1における永久磁石のB-Hカーブデータに基づいて、前記永久磁石内の複数の部位におけるパーミアンス係数および/または前記パーミアンス係数に依存する数値を算出するステップを実行させた後、前記第1の温度T1よりも高い第2の温度T2における前記永久磁石のB-Hカーブデータと前記パーミアンス係数または前記数値とに基づいて、前記第2の温度T2で使用した後の永久磁石における修正B-Hカーブデータを、前記複数の部位の各々について算出するステップをコンピュータに実行させる。\n\n【0030】\n\n好ましい実施形態では、コンピュータに対して、前記修正B-Hカーブデータとして、前記第2の温度T2とは異なる温度における修正B-Hカーブデータを算出させる。\n\n【0031】\n\n好ましい実施形態では、コンピュータに対して、前記修正B-Hカーブデータを計算機のメモリ内に格納するステップを更に実行させる。\n\n【0032】\n\n本発明の磁気回路の製造方法は、上記いずれかの磁場解析方法によって、前記第2の温度T2で減磁した後における複数の永久磁石を含む磁気回路について磁場解析を行うステップと、前記磁場解析の結果に基づいて、前記複数の永久磁石から選択された永久磁石を含む磁気回路を作製するステップとを包含する。\n\n【0033】\n\n【発明の実施の形態】\n\n本発明では、永久磁石の内部においてパーミアンス係数が最小になる部分のみに着目するのではなく、計算によって求めた永久磁石内の各部位におけるパーミアンス係数に基づいて、減磁後における永久磁石内の各部位におけるB-Hカーブを算出する。熱減磁が生じ得るような比較的高い温度(例えば100℃)での環境下で永久磁石を使用した場合、永久磁石の内部における位置によって熱減磁の有無や程度は異なる。本発明では、永久磁石内の各部位におけるB-Hカーブを算出することにより、算出された多数のB-Hカーブに基づいて適切な磁場解析を行うことが可能になる。なお、上記の使用温度である「100℃」は、一例に過ぎず、予め設定された複数の温度におけるB-Hカーブデータが存在する限り、その温度から選択された任意の温度での減磁効果を見積もることができる。このような減磁効果の程度(減磁率)の見積もりは、ロック現象などによって減磁が発生しやすい永久磁石モータの磁気回路を設計する上で非常に有用である。\n\n【0034】\n\n以下、図面を参照しながら、本発明の実施形態を説明する。\n\n【0035】\n\n本実施形態では、有限要素を用いて磁場解析を行う。\n\n【0036】\n\nまず、図5を参照して、本実施形態における手順の概略を説明する。\n\n【0037】\n\n最初のステップ(STEP1)として、与えられた磁石材料および磁石形状などの条件のもとで、常温(第1の温度T1:例えば20℃)における磁場解析を行うこ。この磁場解析により、磁石各部位における磁束密度Bmを抽出し、これに対応するパーミアンス係数を算出する。このとき、公知の磁場解析方法を用いることができる。磁場解析用のコンピュータソフトウエアとしては、例えば日本総合研究所製の商品名「JMAG」を用いることができる。このような初期的な磁場解析は、解析の対象となる永久磁石を多数の微細要素に分ける有限要素法によって好適に実行される。公知の磁場解析方法または磁場解析装置を用いて永久磁石内の各有限要素における磁束密度Bmが算出されると、この値(Bm)からパーミスアンス係数Pcが求まる。有限要素法によって磁石を微細な部分に分割する場合の分割数(有限要素の数=メッシュの数)は、例えば1000個のオーダーに設定される。このステップにおける初期の磁場解析には、通常の磁場解析で用いられる常温でのB-Hカーブデータが用いられる。このようなデータは、市販の磁場解析用ソフトウエアに付随するデータベースに含まれているが、磁場解析用ソフトウエアのユーザが、別途、B-Hカーブデータを作製し、データベースとして用いる場合もある。\n\n【0038】\n\n次に、算出された磁石各部位(各有限要素)におけるパーミアンス係数Pcと磁石の使用温度(第2の温度T2:例えば100℃)に基づいて、少なくとも磁石の一部で熱減磁が生じた後の磁石各部位におけるB-Hカーブへ修正する(STEP2)。この場合の「修正」とは、減磁後のB-Hカーブに関するデータを生成することを意味している。\n\n【0039】\n\nこの後、各部位における修正後のB-Hカーブに基づいて、熱減磁の生じる第2の温度T2とは異なる温度(例えば常温20℃)における磁場解析を実行する。この段階における磁場解析は、上記の磁場解析用ソフトウエアのデータベースに含まれるB-Hカーブデータではなく、修正後のB-Hカーブデータに基づいて行う点に特徴を有している。\n\n【0040】\n\nなお、減磁発生の有無および減磁の程度は、反磁界Hdと温度に依存するが、常温20℃で行う初期解析の際に磁石中の磁束密度を求めた時点で反磁界Hdの影響が考慮されている、言い換えると、永久磁石には、形状や位置によって異なる反磁界Hdが及んでいるが、この反磁界Hdに応じて異なる磁束密度Bmが既に求まっている。このため、STEP2の段階で、磁石内の各有限要素について減磁によるB-Hカーブの修正を行うときには、温度による熱減磁だけを考慮すればよい。\n\n【0041】\n\n次に、STEP3の段階では、STEP2の段階で算出したB-Hカーブに関するデータ(修正B-Hカーブデータ)を磁石の各有限要素について入力する。その後、例えば20℃(第3の温度T3)における磁場解析を行う。この磁場解析がSTEP1の磁場解析と異なる点は、次の点にある。すなわち、STEP1の磁場解析では、磁石内の各有限要素に対して共通のB-Hカーブデータを用いるが、STEP3の磁場解析では、磁石内の各有限要素について、個別に熱減磁の影響を考慮して修正したB-Hカーブデータを用いる。\n\n【0042】\n\n次に、図6を参照しながら、熱減磁後のB-Hカーブデータ(修正B-Hカーブデータ)を生成する方法をより詳細に説明する。\n\n【0043】\n\nB-Hカーブデータの修正は、初期解析によって得られた各部位(各有限要素)における「パーミアンス係数Pc」および「永久磁石の使用温度T2」に基づき、次の手順で実行する。なお、ここでは、T2=100℃での使用により、熱減磁が発生したと仮定する。この場合の温度T2は、第1の温度T1よりも高いが、フェライトなどの冷却で減磁が生じる磁石を対象とする場合の温度T2は第1の温度T1よりも低く設定される。\n\n【0044】\n\n(STEPI)  まず、前述したように、20℃のB-Hカーブ(A1-B1\n\n-C1-D1)を表すデータに基づいて磁場解析を行い、各有限要素におけるパーミアンス係数Pcを計算する。20℃のB-Hカーブデータは、磁場解析用ソフトウエアのデータベースから読み取る。また、計算によって得たパーミアンス係数Pcは、対応する有限要素に関連付けてコンピュータのメモリに格納する。\n\n【0045】\n\n(STEPII)  次に、100℃のB-Hカーブ(A2-B2-C2-D2)\n\nを表すデータを磁場解析用ソフトウエアのデータベースから読み取る。\n\n【0046】\n\n(STEPIII)  各有限要素について、100℃のB-Hカーブ(A2-B2-C2-D2)とパーミアンス係数Pcに対応する動作線との交点(B3)を求める。\n\n【0047】\n\n(STEPIV)  予めデータベース内に格納されている透磁率μrecの値を用いて、熱減磁が発生した温度(100℃)での等価的な残留磁束密度Br(A3)を算出する。この残留磁束密度Br(A3)も各有限要素について求められる。\n\n【0048】\n\n(STEPV)  減磁が発生した温度(100℃)での等価的なBr(A3)\n\nおよび温度係数を用いて計算することにより、磁石温度を常温20℃(=T3)に戻した時の残留磁束道度Br(A4)を求める。この残留磁束密度Br(A4)も、各有限要素について求められる。\n\n【0049】\n\n(STEPVI)  常温20℃に戻した時のBr(A4)および透磁率μrecを\n\n用いて、常温20℃に戻した後のB-Hカーブ(A4-B4-C1-D1)を表すデータを生成する。このようにして得られたB-Hカーブデータが「修正後のB-Hカーブデータ」であり、磁石内の有限要素の各々について算出される。修正後B-Hカーブデータはデータベースに追加され、追加データに基づいて公知の手法で磁場解析を行えば、熱減磁後における任意の温度T3での残留磁束密度分布などを、既存の磁場解析用ソフトウエアを用いて容易に算出することができるようになる。\n\n【0050】\n\n上記磁場解析における各手順は、上記計算(演算)をコンピュータに実行させるプログラムをコンピュータにインストールし、そのプログラムを動作させることにより実行される。このようなプログラムは、修正B-Hカーブデータを生成し、データベースに追加するための追加モジュールを公知の磁場解析用ソフトウエアプログラムと組み合わせることによって容易に作製される。\n\n【0051】\n\nこのようなプログラムがインストールされた磁場解析装置は、選択された永久磁石に関する複数の温度におけるB-Hカーブデータをデータベースとして格納しているメモリ手段と、演算手段とを備えている。この演算手段は、メモリ手段に格納されている第1の温度T1における永久磁石のB-Hカーブデータに基づいて、その永久磁石内の複数の部位におけるパーミアンス係数を算出するステップと、メモリ手段に格納されている第1の温度T1とは異なる第2の温度T2における永久磁石のB-Hカーブデータとパーミアンス係数に基づいて、減磁後のの永久磁石における修正B-Hカーブデータを複数の部位の各々について算出するステップとを実行することになる。なお、上記のステップで、パーミアンス係数そのものを算出する代わりに、パーミアンス係数に依存する数値(例えばパーミアンス係数に比例した数値)を算出しても同様の計算を行うことが可能である。また、これらのパラメータの中に逆磁界を含めて計算を行うことも可能でアクティブマトリクス基板。\n\n【0052】\n\n本発明の磁場解析方法および装置によれば、熱減磁の生じ得る環境で磁気回路を使用する\n\n場合の磁場解析を複数の永久磁石モデルについて実行し、その磁場解析の結果に基づいて永久磁石を適切に選択することにより、優れた磁気回路を低コストで作製することが可能となる。\n\n【0053】\n\n【実施例】\n\n本実施例では、以下に示す磁石サンプルのフラックス、減磁量、および磁束密度分布を本発明の磁場解析方法によって算出し、実測値と比較した。\n\n【0054】\n\n[磁石サンプル]\n\n·磁石材質:住友特殊金属製の希土類永久磁石(商品名:NEOMAX-40BH)(Br=1.309T)\n\n·磁石寸法:厚さ5mm×縦25mm×横79mm\n\n·磁石の数:2個(磁石サンプルAと磁石サンプルB)\n\nなお、磁石の磁化方向が磁石の厚さ方向に平行となるように磁化を行った。本実施例では、希土類磁石を使用したため、減磁は常温よりも高い温度で発する。\n\n【0055】\n\n本発明による磁場解析方法の計算で得た値と、実測で得た値とを比較する際、図7に示す検証モデルを用い、図7に示す位置での磁束密度などを比較の対象とした。\n\n【0056】\n\n図8(a)は、計算および測定によって得られたフラックス量の温度依存性を示している。図8(a)のグラフでは、横軸が永久磁石の使用温度、縦軸がフラックス量を示している。一方、図8(b)は、計算および測定によって得られた減磁率の温度依存性を示している。図8(b)のグラフでは、横軸が永久磁石の使用温度、縦軸が減磁率を示している。グラフ中、計算値は●で示され、サンプルAおよびBの実測値については、それぞれ、△および□で示されている。\n\n【0057】\n\nこれらの結果を下記の表1にまとめる。\n\n【0058】\n\n【表1】\n\n\n\n【0059】\n\n図8および表1からわかるように、計算値は実測値と高い精度で一致した。特に、減磁率の計算値と実測値の差は約2(%)であり、本発明によって減磁解析を精度良く行えることを確認した。\n\n【0060】\n\n次に、計算および実測で得られた磁束密度の分布を説明する。\n\n【0061】\n\n図9(i)は、図7に示す磁石中央部における20℃での磁束密度分布を示し、図9(ii)は、磁石中央部における100℃での磁束密度分布を示している。図10(i)は、磁石端部近傍における20℃での磁束密度分布を示し、図10(ii)は、磁石端部近傍\n\nにおける100℃での磁束密度分布を示している。\n\n【0062】\n\n図9および図10から明らかなように、減磁後の磁束密度分布について、実測値と高い精度で一致する計算値が得られることを確認した。\n\n【0063】\n\nなお、図9または図10の(i)および(ii)とを比較することにより、磁石の両端では100℃でも磁束密度はほとんど低下していないのに、中央部では磁束密度が低下していることがわかる。すなわち、同一の磁石サンプル内においても、磁石の両端に近い部分のようにパーミアンス係数が大きい部分では100℃でも熱減磁が生じないにもかかわらず、磁石中央部などのようにパーミアンス係数が小さい部分では熱減磁が大きく進んでいることを計算と実測の両方で確認できた。\n\n【0064】\n\n【発明の効果】\n\n本発明によれば、永久磁石内の各微小要素における熱減磁後のB-Hカーブを再定義(修正)することにより、今まで行われていなかった減磁後の磁場解析が可能となる。すなわち、永久磁石について減磁が生じるか否かだけではなく、減磁後における磁束密度分布などの算出することが可能となる。このため、適切な永久磁石を選択して低コストで磁気回路を作製することが可能となる。\n\n【図面の簡単な説明】\n\n【図1】厚さ方向に磁化された直方体形状の永久磁石を示す斜視図である。\n\n【図2】図1の永久磁石による磁束線を模試的に示す断面図である。\n\n【図3】図1に示す永久磁石の減磁曲線(Demagnetization curve)の一部を模式的に示すグラフである。\n\n【図4】ある永久磁石の常温(20度)におけるB-Hカーブ(実線)と、100℃におけるB-Hカーブ(点線)を示すグラフである。\n\n【図5】本発明の磁場解析方法の概略を示すフローチャートである。\n\n【図6】本発明の磁場解析方法によるB-Hカーブの修正方法を説明するための図である。\n\n【図7】本発明の実施例で使用する検証モデルを示す図である。\n\n【図8】(a)は、計算および測定によって得られたフラックス量の温度依存性を示すグラフであり、(b)は、計算および測定によって得られた減磁率の温度依存性を示すグラフである。\n\n【図9】(i)は、磁石中央部における20℃での磁束密度分布を示すグラフであり、(ii)は、磁石中央部における100℃での磁束密度分布を示すグラフである。\n\n【図10】(i)は、磁石表面近傍における20℃での磁束密度分布を示すグラフであり、(ii)は、磁石表面近傍における100℃での磁束密度分布を示すグラフである。', '【0001】\n\n技术领域\n\n磁场分析方法和磁场分析器技术领域本发明涉及一种用于磁场的磁场分析方法和磁场分析器,其包括永磁体可以通过去磁的改变特性。而且,本发明是一种磁场分析方法和装置\n\n它还涉及一种制造永磁体的方法。\n\n【0002】\n\n发明背景\n\n近年来,为了研究磁路的设计效率和小型化,进行了使用计算机仿真技术的磁场分析。使用诸如有限元方法的方法进行这种磁场分析,该方法评估具有各种形状的永磁体进入大量分钟元素(网格)。由于这种磁场分析技术改进,因此可以高精度地计算磁路中的磁通密度分布和通量。例如,在非专利文献1中描述了传统的磁场分析方法。\n\n【0003】\n\n[非专利文献1]\n\nTaniguchi Yasuhon,4其他,“考虑歪斜的永磁电机三维磁场分析”,[在线],[搜索2002年10月2日] Internet \n\n【0004】\n\n本发明要解决的问题\n\n加热稀土永磁体会降低其磁化(退磁)。另一方面,在铁氧体磁体中,通过冷却发生去磁。这种去磁性是“不可逆磁磁磁化”,其在恢复到正常温度时不会回收以恢复。可逆退磁量根据磁体的温度线性而变化,并且该比率被称为可逆温度系数。另一方面,不可逆的去磁明明是指即使在通过加热或冷却减少的磁化之​​间返回到室温,也没有回收的去磁噪声。\n\n【0005】\n\n例如,当在100℃下使用永磁体时,在发生不可逆的去磁时,磁体温度降低到常温(20℃),并且磁体的磁化仍然减小并且不会完全恢复。当发生这种去磁时,磁铁的滞后曲线(滞后曲线)的形状将改变。\n\n【0006】\n\n当使用永磁电路对磁路进行磁场分析时,需要考虑考虑永磁体的退磁的磁场分析。然而,在传统的去磁评估方法中,在给定的操作条件(温度和外部磁场)下,仅在永磁体中发生去磁,已经确定了是否发生了去磁。将参考图1和图2描述该点。1到3。\n\n【0007】\n\n图。图1示出了板状永磁体。所示的永磁体在厚度方向上磁化。图。图2是沿着该永磁体的磁通线的形式截取的剖视图。从图1中可以看出。如图2所示,与从磁体的中心部分延伸的磁通管线的磁路相比,从磁体的末端附近的磁通量线的磁路相对较短。\n\n【0008】\n\n在永磁体被磁化之后,由于在永磁体中产生N杆和S杆,如图2所示,如图2所示,从N杆到S杆的磁通量(磁通线)形成在永久的外部磁铁。它将完成。此时,在永磁体内形成来自N极到S杆的磁通量。由于在磁体内部形成的磁通量在使永磁体的方向上工作,因此通过这种磁通量的磁场被称为抗磁场(自剥离场)。抗磁场随着N极并且S杆接近而增加。在图1所示的板状永磁体的情况下,如图1所示,随着板的面积的比率变小,抗磁场变大。\n\n【0009】\n\n图。图3是示意性地示出图1中所示的永磁体的去磁曲线的一部分的曲线图。这里,“退出曲线”是指第二象限和第三象限,在通过从永磁体指示饱和磁通密度或饱和磁极化的状态来单调磁场而获得的历史曲线。ING。在图1中。如图3所示,垂直轴是磁通密度B,水平轴是外部磁场H的曲线图\n\n第二象限的一部分仅显示。在图3的图表中。如图3所示,尽管绘制了近似由直线的退磁曲线被绘制,但历史曲线的历史曲线,其中磁体的历史曲线包含至少一部分。它将被称为“BH曲线“。\n\n【0010】\n\n在图3的图形中,超链接\" * http://member.nifty.ne.jp/bs3/magnet/\" \\ l \" dmgfield \" point对应于高清的曲线上的bh曲线(超链接*# * http://member.nifty.ne.jp/bs3/magnet/term.html\" \\ l \"工作点\"操作点)。该操作点处的磁通密度的值是BM,连接操作点的直线和图形的原点是“超链接*”http://member.nifty.ne.jp/bs3/magnet/ term.html \" \\ l \" loadline \" motion行“。操作线倾斜的绝对值称为超链接* * http://member.nifty.ne.jp/bs3/magnet/\" \\ l \" pcoef \" permeas系数pc。磁通量密度Bm是根据超链接\" http://member.nifty.ne.jp/bs3/magnet/\" \\ l \" pcoef \"渗透系数pc的数字之一。\n\n【0011】\n\n由于抗磁场高清存在于相对于永磁体相对于外部磁场的存在或不存在,因此从永磁体产生的磁通量的密度等于相应的磁通密度BM到了操作点。通常,据说,据说永磁体的操作点根据磁铁的形状或周围情况而改变,但严格地根据永磁体内的位置而不同。也就是说,永磁体的渗透系数Pc在永磁体内不均匀,并且根据永磁体中的位置具有不同的值。\n\n【0012】\n\n如图1所示。如图2所示,随着磁路变短,非磁场HD很小,并且渗透系数PC增加,磁路越大,防磁场高清越大,允许越小系数PC。因此,图2中所示形状的永磁体允许系数PC。如图1所示,如图1所示,图1中的中心部分是磁体的中心部分和磁体的最大拐角部分。在图1中。如图1所示,PC(min)表示渗算系数PC被最小化的部分,并且PC(MAX)指示渗算系数PC最大的部分。\n\n【0013】\n\n因此,永磁体的渗透系数PC根据永磁体的位置而不同。另一方面,从易抑制系数PC最小化的部分发生去磁。因此,在传统的磁场分析方法中,通过计算机仿真计算磁体中的每个部分(许多有限元)的磁通密度Bm,以及磁通密度的部分的允许系数PC(min) BM是最小的。它是计算的。并且,通过比较显示这种渗透系数PC(min)的操作线,将该部分与使用温度的BH曲线进行比较,判断是否可以被脱磁。接下来,将参考图4描述这种传统的退磁评估方法。\n\n【0014】\n\n图。图4是在100℃下在永磁体的常温(20度)的常温(20度)处的BH曲线(实线)的曲线图。每个温度的BH曲线的数据存储在计算机的存储器中,并且在输入的永磁体等的形状之后,通过有限元方法指定磁体中的每个部分的操作线。\n\n【0015】\n\n图4的图表。图4示出了两种类型的磁体C和D的操作线。操作线C是磁型系数PC的部分的工作线,其中磁体C内部最低,并且操作线D假设最易置的系数PC是磁磁D内最低部分的操作线。而且,为了简化,假设BH曲线对于磁体C和磁体D是常见的。\n\n【0016】\n\n从图1中可以看出。如图4所示,操作线C和20℃的BH曲线的交叉点和100℃的B-H曲线均位于相应的B-H曲线极性点(knick点)上方。因此,在100℃下使用具有大渗精系数PC(min)的磁体C.\n\n评估它即使在用于使用环境中也不会被解除。\n\n【0017】\n\n另一方面,磁体D的操作线与20℃的BH曲线之间的交叉点位于BH曲线上方,但是100°C,BH曲线的BH曲线的交叉点位于下方BH曲线极性点(knick点)。由此,确定具有小渗精系数Pc(min)的磁体D在20℃下不会被脱落,但在100℃下是Decharmosomed。\n\n【0018】\n\n根据以这种方式执行的传统磁场分析方法,由于永磁体中的渗透系数的最低部分被脱离,例如,渗透系数的最低部分是整个永磁体占据的比例非常小而实际上,即使几乎没有退磁问题,也可以被确定为“退出发生”。\n\n【0019】\n\n此外,传统的磁场分析方法无法对发生在退磁后的磁通密度分布的任何响应。也就是说,在传统的磁场分析方法中,由于仅针对每个磁体确定了去磁的存在或不存在,因此存在不可能通过退磁的通量和磁通密度分布变化的问题。有。\n\n【0020】\n\n鉴于这种情况,已经提出了本发明,并且其主要目的是永磁体发生的去磁,但是可以在退磁后进行诸如磁通密度分布的诸如磁通密度分布。提供分析方法和装置。\n\n【0021】\n\n[解决问题的手段]\n\n本发明的磁场分析方法是基于永磁体在永久磁铁中的永磁体的基于永磁体的BH曲线数据在永磁体之后基于永磁体的BH曲线数据来计算永磁体的渗透系数和/或渗透系数的步骤在第二温度T2基于与第一温度T1的第二温度T2处的永磁体的BH曲线数据,与第一温度T1和渗算速度系数或数值不同。BH曲线数据包括计算多个站点中的每一个。\n\n【0022】\n\n在优选实施例中,计算与第二温度T2不同的温度的校正的BH曲线数据被计算为校正的B-H曲线数据。\n\n【0023】\n\n在优选实施例中,修改的B-H曲线数据还包括在计算机的存储器中。\n\n【0024】\n\n本发明的磁场分析装置是一种磁场分析装置,其具有用于将BH曲线数据存储在与所选永磁体相关的多个温度下的存储装置,以及运算装置是存储器装置。基于存储在第一温度T1的第一温度T1的永磁体的BH曲线数据,计算永磁体系数和/或数值基于永磁体的BH曲线数据计算的永久系数和/或数值的步骤,以及使用后的存储器在第二温度T2在基于与第一温度T1不同的第二温度T2处的永磁体的BH曲线数据,其与第一温度T1不同,通过计算执行永磁体中的校正BH曲线数据多个位点中的每一个。\n\n【0025】\n\n在优选实施例中,计算装置将校正的B-H曲线数据存储在存储器装置中。\n\n【0026】\n\n本发明的磁场分析程序永久性在计算机的第一温度T1处。\n\n基于磁体的BH曲线数据,计算渗透系数和/或依赖于永磁体处的渗透系数的数值,以及与用于计算改进的BH曲线数据的第一温度T1步骤的第二温度T2在基于永磁体的BH曲线数据和上述易磁质的BH曲线数据和上述易磁性或数值的BH曲线数据之后,以及多个站点中的每一个执行的永磁体。\n\n【0027】\n\n在优选实施例中,将修改的B-H曲线数据计算为修改的BH曲线数据,并且计算了与第二温度T2不同的温度的校正的BH曲线数据。\n\n【0028】\n\n在优选实施例中,该过程还执行将修改的B-H曲线数据存储在计算机的存储器中的步骤。\n\n【0029】\n\n在本发明的磁场分析的附加模块程序中,磁场分析程序基于永磁体在永磁体处的永磁体的BH曲线数据到计算机,并且在执行计算步骤之后依赖于渗透系数的值,在第二温度T2处的永磁体的BH曲线数据高于第一温度T1和渗精系数或数值。基于计算校正的BH曲线数据的步骤在使用在第二温度T2之后的永磁体中,计算机执行计算多个站点中的每一个的步骤。\n\n【0030】\n\n在优选实施例中,将修改的B-H曲线数据计算为修改的BH曲线数据,并且计算了与第二温度T2不同的温度的校正的BH曲线数据。\n\n【0031】\n\n在优选实施例中,该过程还执行将修改的B-H曲线数据存储在计算机的存储器中的步骤。\n\n【0032】\n\n制造本发明的磁路的方法是在在任何上述磁场分析方法的任何磁场分析方法中消除后,在包括多个永磁体之后对包括多个永磁体进行磁场分析的步骤,以及它包含的磁场分析制造磁路的步骤,包括从多个永磁体中选择的永磁体。\n\n【0033】\n\n发明内容\n\n在本发明中,不仅在永久系数最小化的部分上不仅聚集在永久系数最小化的部分上,并且在通过计算获得的每个站点处的渗透系数进行去磁之后,在永磁体中的每个部分。计算网站上的BH曲线。当在相对高的温度(例如,100℃)的环境下使用永磁体,使得可能发生热退磁,减少磁磁化的存在或程度根据永磁体内的位置而不同。在本发明中,通过计算永磁体中的每个部分的B-H曲线,可以基于计算的大量B-H曲线来执行适当的磁场分析。注意,即上述使用温度的“100℃”仅是示例,只要存在多个预设温度的BH曲线数据,就可以在从该温度中选择的任何温度的去磁效果估计的。这种去磁效果(退磁因子)的估计在设计由于锁定现象等而可能发生的永磁电动机的磁路非常有用。\n\n【0034】\n\n在下文中,将参考附图描述本发明的实施例。\n\n【0035】\n\n在本实施例中,使用有限元进行磁场分析。\n\n【0036】\n\n首先,将参考图4描述本实施例中的过程的概要。\n\n【0037】\n\n作为第一步骤(步骤1),在诸如给定的磁体材料和磁体形状的条件下在常温(第一温度T1:,例如20℃)下进行磁场分析。通过该磁场分析,提取磁体的每个部位处的磁通密度Bm,并计算与其对应的渗漏系数。此时,可以使用已知的磁场分析方法。例如,对于电脑软件进行磁场分析,例如,可以使用Nippon Research Institute制造的“JMAG”的商品名“JMAG”。这种初始磁场分析适当地由有限元方法进行,该有限元方法将永磁体分析成大量细节。当使用已知的磁场分析方法或磁场分析仪计算永磁体中的每个有限元件中的磁通密度Bm时,从该值(BM)获得Permisceens系数PC。分割的数量(有限元数=网格数)被设定为例如1000个订单,用于通过有限元方法将磁铁分成细部分。在该步骤中的初始磁场分析中,使用正常磁场分析中使用的常温下的BH曲线数据。这些数据包括在与市售的磁场分析软件相关联的数据库中,但软件分析软件的用户分别创建了B-H曲线数据并用作数据库。\n\n【0038】\n\n接下来,基于磁铁的每个部件(每个有限元件)的Peremian系数Pc和磁体的磁体的工作温度至少在磁体中至少部分地发生热退磁。(对于每个有限元)。在每个部分的BH曲线校正插座(步骤2)。在这种情况下,“校正”表示在退磁后生成关于B-H曲线的数据。\n\n【0039】\n\n此后,与第二温度T2不同的温度(例如,常温20℃)的磁场分析,其基于每个部位校正后的BH曲线发生导致热退磁。该阶段的磁场分析的特征在于,它不是软件分析软件数据库中包含的BH曲线数据,但是其特征在于它基于修改的BH曲线数据执行。\n\n【0040】\n\n另外,尽管存在或不存在去磁产生和去磁度取决于抗磁场高清的温度,但是当在初始分析期间在常温20°C时执行磁体中的磁通密度时,获得抗磁场HD的影响。换句话说,换句话说,差分磁场HD根据形状和位置而不同,但是根据抗磁场HD已经获得了不同的磁通密度BMS。因此,在步骤2的步骤中,当通过对磁体中的每个有限元件的去磁时校正B-H曲线时,可以考虑由于温度引起的热退磁。\n\n【0041】\n\n接着,在步骤3阶段中,数据(校正BH曲线的数据)与在STEP2的阶段中计算出的BH曲线是用于磁体的每个有限元的输入。此后,进行在20℃(第三温度T3)磁场分析。从STEP1的磁场分析该磁场分析的不同是在以下的点。即,在STEP1,BH曲线数据共用的磁体每个有限元的磁场分析被使用,但在STEP3的磁场分析,在磁体的每个有限元被单独考虑热退磁的影响。使用修改后的BH曲线数据。\n\n【0042】\n\n接着,热退磁之后产生BH曲线数据(校正BH曲线数据)的方法将在更详细地参考图3来描述。\n\n【0043】\n\nBH曲线数据的校正是在基于由最初的分析中获得的“Permeas系数PC”和“永磁T2”中的每个部分(每个有限元素)上的以下过程来执行。这里,假定通过使用T2 = 100℃已发生热退磁在这种情况下的温度T2低于第一温度T1高,但是当由铁素体的还原等进行生成的磁体被设定的温度T2低于第一温度T1低。\n\n【0044】\n\n(步骤1)首先,如上所述,在20℃的B-H曲线(A1-b.1\n\n-C1-D.1基于表示数据进行磁场分析),并且在每个有限元的Permeas系数PC被计算。在20℃下的B-H曲线数据从软件分析软件数据库中读取。此外,通过计算获得的系数Permeas PC被存储在计算机的与对应的有限元相关联的存储器。\n\n【0045】\n\n(STEPII)接着,在100℃(A B-H曲线2-b.2-C2-D.2的)\n\n表示从软件分析软件数据读取数据。\n\n【0046】\n\n(STEPIII)对于每个有限元,B-H曲线,在100℃(A2-b.2-C2-D.2站点间与对应于Permeas系数PC操作线3问)。\n\n【0047】\n\n(STEPIV)Magneterminationμ预先存储在数据库中rec在其中使用的值发生热退磁的温度(100℃),相当于剩余磁通密度Br(一种3计算)。该剩余磁通密度Br(一种3还需要每个有限元素。\n\n【0048】\n\n(STEPV)相当于B中,其中发生退磁的温度(100℃)r(一种3的)\n\n并且当磁体温度,通过计算使用温度系数恢复到正常温度20℃(= T3)剩余磁通度Br(一种4问)。该剩余磁通密度Br(一种4另外,需要每个有限元素。\n\n【0049】\n\n(STEPVI)B.回到10°C Br(一种4)和磁导率μrec的\n\n使用正常的温度20℃(A后B-H曲线4-b.4-C1-D.1生成的数据代表)。以这种方式得到的B-H曲线的数据是“修正后的BH曲线数据”,并计算出每个磁体中的有限元素。后校正BH曲线的数据被添加到数据库中,并且通过公知的方法基于附加数据来执行磁场分析,在热退磁后的任何温度T3剩余磁通密度分布是现有磁场分析软件可以容易地软件使用磨损计算。\n\n【0050】\n\n在磁场分析每个程序通过安装程序,以在计算机上执行所述计算机上的计算(操作),并操作所述程序执行的。这样的程序容易地通过生成校正的B-H曲线的数据和添加额外的模块,以与公知的磁场分析软件程序的数据库来制造。\n\n【0051】\n\n在其中安装这样的程序的磁场分析装置包括用于在所选择的数据库和一个操作的装置的永久磁铁的多个温度的存储BH曲线数据的存储器装置。该计算装置被存储在多个位点的基于永久磁铁的BH曲线数据的永久磁铁,并存储在基于所述永久磁铁的BH曲线数据在存储在所述存储器装置中的第1温度T1的存储器装置基于在从所述第一温度T1,第二温度T2不同的永久磁铁的BH曲线数据,在退磁后的永久磁铁,改性BH曲线数据计算每个所述多个站点中的。执行步骤。在上述步骤中,代替计算permeanance系数本身,也可以执行即使(例如,数值正比于permeanance系数)的计算依赖于permeanance系数的数值进行同样的计算。此外,能够计算这些参数,包括逆磁场和可以计算出来。\n\n【0052】\n\n根据本发明的磁场分析的方法和装置,其中,热退磁发生在环境中使用的磁回路\n\n对于多个永久磁铁模型进行的情况下的磁场分析,和优异的磁电路可以以低成本通过基于磁场分析的结果适当地选择的永久磁铁来制造。\n\n【0053】\n\n【例子】\n\n另外,在本实施例中,助焊剂,退磁量,和如下所示的磁体样品的磁通密度分布是由本发明的磁化分析方法计算出的,并与所测量的值进行比较。\n\n【0054】\n\n[磁铁样品]\n\n·磁铁材料:住友特殊金属稀土永磁体(商品名:NEOMAX-40BH)(Br= 1.309T)\n\n磁体尺寸:厚5mm×25mm长×79毫米水平\n\n·磁铁数:2片(磁体样品A和磁铁样品B)\n\n此外,进行磁化,使得磁体的磁化方向平行于磁体的厚度方向。在本实施例中,由于稀土类磁铁时,退磁是在温度高于常温发射。\n\n【0055】\n\n当比较通过根据本发明的磁化分析方法计算得到的值,在图中所示的值。7时,在图2所示的位置处的磁通密度。7被用作验证的目标图建模。\n\n【0056】\n\n图8A示出通过计算和测定得到的磁通量的温度依赖性。在图8A中的曲线图中,横轴表示永磁体的使用温度,而垂直轴表示磁通量。在另一方面,图8(b)示出通过计算和测定得到的退磁的温度依赖性。在图8B的曲线图中,横轴表示永磁体的使用温度,而垂直轴表示磁性。在图中,所计算出的值被分别●表示,样品A和B的测量值通过Δ表示,并且□。\n\n【0057】\n\n这些结果总结在下表1中。\n\n【0058】\n\n【表格1】\n\n\n\n【0059】\n\n如可从图8和图1可以看出,所计算的值与在测量值和高准确度匹配。具体地,计算出的值和去磁率的测定值之间的差大约是2(%),它被本发明所证实,该退磁分析能够以高精确度执行。\n\n【0060】\n\n接着,通过计算和测量所获得的磁通密度的分布进行说明。\n\n【0061】\n\n图9(I)显示的磁通密度在20℃下在图7中,和图中所示的中心部分分布。9(ii)显示在100℃下的磁通密度分布在中心部分磁铁。图10(I)示出了在20℃附近的磁体端,并且图中的磁通密度分布。10(ii)的附近的磁铁端\n\n在100℃下的磁通密度分布示。\n\n【0062】\n\n如从图9和图10可知,可以确认,可以对去磁后的磁通密度分布来获得的测量值和高精度匹配计算值。\n\n【0063】\n\n另外,通过比较图9或(i)和(ii)的图9或(i)和(ii),即使在磁体的两端在100℃下,即使磁通密度几乎没有降低,也几乎不会降低磁通密度,并且磁通密度降低。可以看出。即使在相同的磁体样本中,即使在易凝血系数大的一部分中也不会发生热量退磁,诸如靠近磁体的两端的一部分,允许的系数是如磁体的中心部分更小。在该部分中,可以确认在计算和测量中的热减压磁性正在显着进展。\n\n【0064】\n\n【发明效果】\n\n根据本发明,通过重新定义(校正)在永磁体中的每个分钟元件中的热密度之后的BH曲线,可以在迄今为止未进行的退磁后分析磁场。也就是说,不仅可以对永磁体引起退磁,而且还可以在退磁后计算磁通密度分布等。因此,可以选择合适的永磁体以以低成本产生磁路。\n\n[简要描述;简介]\n\n【图1】图3是表示在厚度方向上磁化的矩形平行六面体形状的永久磁体的立体图。\n\n【图2】图3是表示图1的永磁体的磁通线的剖视图。\n\n图3.图3是表示图1所示的永磁体的退磁曲线的一部分的图。\n\n图4.图3是在100℃的永磁体和BH曲线(虚线)的常温(20度)处的BH曲线(实线)的图表。\n\n图5.图3是表示本发明的磁场分析方法的概要的流程图。\n\n6.图3是通过本发明的磁场分析方法证明校正B-H曲线的方法的图。\n\n图7.图3是表示本发明的示例中使用的验证模型的图。\n\n图8.(a)是表示通过计算和测量获得的焊剂量的温度依赖性的曲线图,(b)是显示通过计算和测量获得的去磁的温度依赖性的图。\n\n图9(i)是示出在磁体的中心部分的20℃下磁通密度分布的曲线图,并且(ii)是表示磁铁的中心部分的100℃下磁通密度分布的曲线图。\n\n图10.(i)是表示在磁体表面附近20℃的磁通密度分布的曲线图,(ii)是表示磁体表面附近100℃的磁通密度分布的曲线图。');
INSERT INTO `os_patent_instruction_text` VALUES (12955, 22784, '【0001】\n\n【発明の属する技術分野】\n\n本発明は、ワイヤソーを用いる切断方法およびワイヤソー装置ならびに希土類磁石の製造方法に関する。\n\n【0002】\n\n【従来の技術】\n\n希土類合金は、例えば、強力な磁石の材料として利用されている。希土類合金を着磁することによって得られる希土類磁石は、例えば、磁気記録装置の磁気ヘッドの位置決めに用いられるボイスコイルモータ用の磁石として好適に用いられている。\n\n【0003】\n\n希土類合金のインゴット(焼結体を含むものとする。)を切断する方法としては、従来から、例えば回転するスライシングブレードを用いてインゴットをスライスする技術が採用\n\nされている。しかしながら、スライシングブレードで切断する方法によれば、切断刃の厚さは比較的大きいため、削り代が多くなり、希土類合金材料の歩留まりが低く、希土類合金製品(例えば希土類磁石)のコストを上昇させる要因となっている。\n\n【0004】\n\nスライシングブレードよりも削りしろが少ない切断方法として、ワイヤを用いた方法がある。例えば、特許文献1は、高強度の芯線の周面上に超砥粒をボンド層により固定したワイヤ(「固定砥粒ワイヤ」と呼ばれることもある。)を用いて、シリコン、サファイア、水晶、ガラス、ネオジム、フェライト等の硬脆材料を切断できることを開示している。\n\n【0005】\n\n上述のような固定砥粒ワイヤを用いて、希土類合金の塊(インゴット)から少ない削り代で所定厚さの板を多数枚同時に作製することができれば、希土類磁石の製造コストが大幅に低減される。しかしながら、固定砥粒ワイヤを用いて希土類合金を量産レベルで切断したとの報告は未だに無い。\n\n【0006】\n\n発明者が種々検討した結果から、この主な原因として、希土類合金、特に、焼結法によって製造された希土類合金(以下、「希土類焼結合金」を呼ぶ。)の機械的な性質が、シリコン等と大きく異なることが挙げられる。具体的には、希土類焼結合金は、主に脆性的な破壊を起こす硬い主相(R2Fe14B相)と、延性的な破壊を起こす粒界相(Rリッチ相)とを有するので、シリコンに代表される硬脆材料と異なり、切削され難い。すなわち、シリコン等の硬脆材料を切断する場合に比べて、切削抵抗が高く、その結果、発熱量も多い。また、希土類合金の比重は、約7.5とシリコン等の材料に比べて大きく、切削によって生成される切削屑(スラッジ)が切削部から排出され難い。\n\n【0007】\n\n従って、希土類合金を、高い加工精度で、効率良く切削するためには、切削抵抗を十分に低下させるとともに、切削時に発生する熱を効率良く放熱する、すなわち切削部を効率良く冷却する必要がある。また、切削によって生成される切削屑を効率良く排出する必要がある。\n\n【0008】\n\n潤滑性に優れた冷却液(「切削液」ともいう。)を希土類合金の切削部に十分に供給することによって、切削抵抗を低下するとともに、切削時に発生する熱を効率良く放散することができる。発明者による実験の結果、油性の冷却液を用いて、ワイヤを十分な量の冷却液で濡らしておけば、走行するワイヤによって、狭い切削部に冷却液を十分に供給することができる。\n\n【0009】\n\nしかしながら、油性の冷却液には、環境破壊を起こさないように廃液を処理するためにコストがかかること、および、廃液中の切削屑を分別することが困難であり、廃液や切削屑の再利用が困難であるという問題がある。また、希土類合金の切削屑を再利用する際に、原料中の炭素含有量が増加し、磁気特性を低下させるため好ましくないという問題もある。これらのことを考慮すると、冷却液としては水(または水溶性の冷却液)が好ましいのであるが、水を冷却液として用いると、水は粘度(動粘度:1.0mm2/s)が低いので、走行するワイヤに十分な量を付着させることができないので、ワイヤを水で濡らしても切削部に十分な量の水を供給することができない。\n\n【0010】\n\n特許文献1は、冷却液の槽からオーバーフローする冷却液中にワイヤを走行させることによって、固定砥粒ワイヤを高速(例えば2000m/min)で走行させる場合においても、冷却液をワイヤに確実に付着させることができることを開示している。しかしながら、本発明者の実験によると、オーバーフローしている水の中にワイヤ(例えば、特許文献1に開示されている)を走行させながら希土類合金を切削しても、砥粒の脱落や、ひどい場合にはワイヤの断線が発生する。この不具合は、ワイヤの走行速度が例えば800m/min程度でも発生した。これは、上記の方法を採用しても、切削抵抗が高く、また、水\n\nが切削部に十分に供給されないためと考えられる。\n\n【0011】\n\n本発明者が種々検討した結果、25℃における表面張力が25mN/m〜60mN/mの範囲内(または動摩擦係数が0.1〜0.3の範囲内)にある水を主成分とする冷却液を切削部に供給することによって、ワイヤを効率良く冷却することができることを見出した(特願2000-358462号および特願2001-318867号)。上記の範囲内の表面張力または動摩擦係数を有する冷却液は、水に比べて、希土類合金および/またはワイヤに対する濡れ性(またはなじみ)が優れるので、切削部(希土類合金とワイヤとが互いに接触し、希土類合金が切削される部分。切削溝ともいう。)に冷却液が効率よく浸透するためと考えられる。勿論、水を主成分とする冷却液は、油性冷却液(例えば鉱油)に比べ比熱が高いので、冷却効率が高い。なお、本明細書において、「水を主成分とする冷却液」とは、全体の70重量%以上が水である冷却液をいうものとする。\n\n【0012】\n\n【特許文献1】\n\n特開平11-198020号公報\n\n【0013】\n\n【発明が解決しようとする課題】\n\nしかしながら、本発明者がさらに検討した結果、水を主成分とする冷却液を用いると、ワイヤが巻き付けられるリールボビンにおいて、ワイヤ同士の接触摩擦によって、砥粒がワイヤから剥がれる(脱粒と呼ぶことがある。)という現象が生じるという問題があることがわかった。\n\n【0014】\n\nこれは、水を主成分とする冷却液は油性の冷却液に比べてワイヤに対する付着力が低く且つ蒸発しやすいので、リールボビンに巻き取られるときにはワイヤに付着している冷却液は僅かまたはほとんど無く、ワイヤ同士の摩擦による発熱および機械的な摩擦力を低減することができないためであることがわかった。すなわち、これは切断部には冷却液がワイヤに供給されるものの、リールボビンに巻きとられるまでに走行中において冷却液がはじき飛ばされるからであると推測される。\n\n【0015】\n\nまた、ワイヤ同士の摩擦は、砥粒の脱粒に至らなくとも、砥粒に機械的なダメージを与えるので、切削精度を低下させたり、切削効率が低下したりする。さらにひどい場合には、砥粒が樹脂層(ボンド層)とともに剥がれてしまうこともある。すなわち、水を主成分とする冷却液を用いると、リールボビンにおけるワイヤ同士の摩擦によってワイヤの寿命が短くなる。固定砥粒ワイヤは比較的高価なので、切断加工にかかる費用を低減するためにも、ワイヤの寿命を長くすることが望ましい。\n\n【0016】\n\nまた、芯線の外周面に形成された樹脂層によって砥粒が固着されたワイヤを用いると、樹脂層が芯線から剥離(離脱)する「樹脂剥がれ」が発生することがある。種々検討した結果、この樹脂剥がれの原因は、上述したワイヤ同士の接触摩擦によるダメージだけでなく、樹脂層が水を主成分とする冷却液(特に、アルカリ性の防錆剤などのアミン類を含む冷却液)によってダメージを受けることにも一因があることがわかった。\n\n【0017】\n\n上述したように、特に、希土類合金はワイヤソーを用いて切断することが難しいが、水を主成分とする冷却液を用いるとワイヤの寿命が短くなるという問題は、シリコン、サファイア、水晶、ガラス、ネオジム、フェライト等の硬脆材料を切断する場合にも発生する。\n\n【0018】\n\n本発明は上記の諸点に鑑みてなされたものであり、その主な目的は、水を主成分とする冷却液を用いてワイヤソー装置で切断する際のワイヤの寿命を長くすることにある。\n\n【0019】\n\n【課題を解決するための手段】\n\n本発明の切断方法は、芯線の外周面に形成された樹脂層によって砥粒が固着されたワイヤを用いる切断方法であって、表面がグリコールを含む潤滑液によって被覆されたワイヤをリールボビンに巻く準備工程と、前記リールボビンに巻かれたワイヤを複数のローラの間で走行させる工程と、ワークピース(被切削物)が前記ワイヤによって切削される部分に水を主成分とする第1冷却液を供給しながら、走行している前記ワイヤでワークピースを切削する工程とを包含し、そのことによって、上記目的が達成される。特に、樹脂剥がれの問題の発生を抑制することができる。\n\n【0020】\n\n前記リールボビンに巻かれた前記ワイヤまたは前記リールボビンの近傍を走行する前記ワイヤに、水を主成分とする第2冷却液を供給する工程をさらに包含することが好ましい。\n\n【0021】\n\n前記第2冷却液は、希土類合金に対する25℃における動摩擦係数が0.3以下であることが好ましい。\n\n【0022】\n\n前記第2冷却液はグリコールを含んでもよい。\n\n【0023】\n\n前記第2冷却液は噴霧法によって前記ワイヤに供給されてもよい。\n\n【0024】\n\n前記準備工程において、前記リールボビンに前記ワイヤを巻くときの張力は7N以上15N以下の範囲内にあることが好ましい。\n\n【0025】\n\n前記リールボビンに前記ワイヤを巻くときのピッチは前記ワイヤの外径の2倍未満であることが好ましく、外径の100%超190%以下であることがさらに好ましい。\n\n【0026】\n\n前記第1冷却液は、希土類合金に対する25℃における動摩擦係数が0.1〜0.3の範囲内にあることが好ましい。\n\n【0027】\n\n前記樹脂は、フェノール樹脂、エポキシ樹脂またはポリイミド樹脂であることが好ましい。\n\n【0028】\n\n前記ワイヤの走行方向における、互いに隣接する前記砥粒間の平均距離は、前記砥粒の平均粒径の100%〜600%の範囲内にあり、且つ、前記砥粒が前記樹脂層の表面から突出している部分の平均高さは、10μm〜40μmの範囲内にあることが好ましい。\n\n【0029】\n\n前記第2冷却液は前記第1冷却液よりも粘度が高いことが好ましい。\n\n【0030】\n\n前記第1冷却液および前記第2冷却液の温度は15℃から35℃の範囲にあることが好ましい。\n\n【0031】\n\n前記複数のローラのそれぞれは、案内溝が形成された高分子層を有し、前記案内溝は、少なくとも一方の斜面が前記ローラの半径方向に対して25°以上45°未満の角度を成す一対の斜面を有し、前記ワイヤは前記一対の斜面の間を走行させられることが好ましい。\n\n【0032】\n\nワークピースは、R-Fe-B系希土類焼結合金であってよく、例えば、ワークピースは、Nd-Fe-B系希土類焼結合金であってもよい。\n\n【0033】\n\n本発明の希土類磁石の製造方法は、希土類合金粉末から希土類磁石の焼結体を作製する工程と、上記のいずれかの切断方法を用いて、前記焼結体から複数の希土類磁石を分離する工程とを包含することを特徴とする。\n\n【0034】\n\n本発明のワイヤソー装置は、芯線の外周面に形成された樹脂層によって砥粒が固着されたワイヤと、前記ワイヤがその周辺に巻きつけられるリールボビンと、前記リールボビンに巻きつけられた前記ワイヤを引き出し、走行させる複数のローラと、前記ワイヤがワークピースを切削する部分に第1冷却液を供給する装置と、前記リールボビンに巻き付けられている前記ワイヤまたは前記リールボビンの近傍を走行する前記ワイヤにグリコールを含む第2冷却液を供給する装置とを備え、そのことによって上記目的が達成される。\n\n【0035】\n\n前記第2冷却液を供給する装置は噴霧装置を備えている構成としても良い。\n\n【0036】\n\n本発明の希土類磁石の製造方法によって製造された希土類磁石は、ボイスコイルモータに好適に用いられる。\n\n【0037】\n\n【発明の実施の形態】\n\n以下に、本発明による実施形態の切断方法を説明する。\n\n【0038】\n\n本発明による切断方法は、芯線(典型的にはピアノ線)に砥粒(典型的にはダイヤモンド砥粒)を固着させたワイヤ(固定砥粒ワイヤ)を用いる。一対のリールボビンに巻かれたワイヤを複数のローラの間で走行させ、走行しているワイヤに希土類合金(ワーク)を押し当てながら切断する。このとき、希土類合金がワイヤによって切削される部分に水を主成分とする冷却液(第1冷却液)を供給しながら切削を行う。ここで、ワイヤをリールボビンに巻く準備工程において、ワイヤの表面をグリコールを含む潤滑液によって被覆することによって、芯線の外周面に形成された樹脂層によって砥粒が固着されたワイヤにおける樹脂剥離の発生を抑制することができる。\n\n【0039】\n\nグリコールを含む潤滑液はグリコール原液またはグリコールを50質量%以上含む水溶液を好適に用いることができる。グリコールとしては、例えば、ポリオキシアルキレンを好適に用いることができる。グリコールは、樹脂層よりも親水性(保水性)が高いので、樹脂層が水を吸湿することを防止するように作用するものと考えられる。また、ワイヤをリールボビンに巻く準備工程においてワイヤに付与されるグリコールを含む潤滑液は、切削される部分に供給され冷却液よりも潤滑性が高いことが好ましい。\n\n【0040】\n\nグリコールを含む潤滑剤でワイヤの表面を覆う工程は、ワイヤソー装置のリールボビンにワイヤを巻く際に実行することが好ましい。グリコール(またはグリコール水溶液)をワイヤ表面に付与する方法としては、スプレーによる散布法や、滴下法、塗布法、浸漬法などを適宜用いることができる。ワイヤをリールボビンに巻くときの張力は7N以上15N以下の範囲内にあることが好ましい。張力が7Nよりも低いとワイヤの巻き込みが発生することがあり、15Nを超えるとワイヤ同士の摩擦による損傷が発生しやすくなる。また、張力をこの範囲に設定すると、良好な切断精度を得ることができるので好ましい。\n\n【0041】\n\nまた、リールボビンにワイヤを巻くときのピッチ(ワイヤの中心間距離)はワイヤの外径の2倍未満であることが好ましく、外径の100%超190%以下であることがさらに好ましい。このように巻き取りの際のピッチを調整することによって、リールボビンに先に巻かれたワイヤの間に次のワイヤが入り込むことが防止され、ワイヤの撓みやワイヤ同士の摩擦の発生を抑制することができる。\n\n【0042】\n\nこのように、ワイヤソー装置の準備工程において、リールボビンにワイヤを巻く際にグリコールを含む潤滑液でワイヤを被覆すると、ワイヤを保存している状態における吸湿によるワイヤの樹脂層の劣化を抑制することが出来る。グリコールを含む潤滑液のワイヤへの付与は、準備工程に限られず、例えば、上記第2冷却液中にグリコールを添加·混合してもよい。\n\n【0043】\n\nワイヤの寿命を長くするために、さらに、一対のリールボビンに巻かれたワイヤまたは一対のリールボビンの近傍を走行するワイヤにも水を主成分とする冷却液(第2冷却液)を供給することが好ましい。リールボビンに巻かれたワイヤにも冷却液を供給することによって、リールボビンにおけるワイヤ同士の摩擦による発熱および機械的な摩擦力が低減される。その結果、ワイヤが受ける機械的なダメージが低減されるので、切削精度や切削効率の低下が抑制され、且つ、ワイヤの寿命が長くなる。\n\n【0044】\n\n第1冷却液は、希土類合金に対する25℃における動摩擦係数が0.1〜0.3の範囲内にあることが好ましい。また、第2冷却液は、希土類合金に対する25℃における動摩擦係数が0.3以下であることが好ましく、0.15以下であることがさらに好ましい。なお、以下の実施形態で示す動摩擦係数は、R-Fe-B系希土類合金の焼結体を用いて四球式摩擦試験機で求めた値である。R-Fe-B系希土類磁石として好適に用いられる希土類合金の組成および製造方法は、例えば、米国特許第4,770,723号および米国特許第4,792,368号に記載されている。\n\n【0045】\n\nなお、25℃の動摩擦係数を用いて、本発明の切断方法で用いられる第1および第2冷却液を特定したが、実際に使用する際の冷却液の温度は、25℃に限られない。但し、本発明の効果を得るためには、15℃〜35℃の範囲内に温度制御された冷却液を用いることが好ましく、20℃〜30℃の範囲内にあることがさらに好ましい。よく知られているように、冷却液の動摩擦係数は温度に依存するので、実際に使用する冷却液の温度が上記の温度範囲からあまり外れると、冷却液の動摩擦係数が上記の数値範囲から外れた状態と良く似た状態となり、冷却効率が低下する。\n\n【0046】\n\n上記の動摩擦係数を有する冷却液を用いることによって、ワイヤの温度の異常上昇を効果的に抑制することができるので、砥粒の異常脱粒やワイヤの断線を効果的に抑制·防止することができる。その結果、加工精度の低下が防止されるとともに、従来よりも長い期間に亘ってワイヤを使用することが可能となるので製造コストを低減することができる。\n\n【0047】\n\nこの効果は、切削部に供給する第1冷却液およびリールボビンに巻かれたワイヤまたは一対のリールボビンの近傍を走行するワイヤに供給する第2冷却液に共通であるので、第1冷却液と第2冷却液として同じ冷却液を用いても良い。但し、第2冷却液がリールボビンに巻かれたワイヤまたはリールボビンの近傍を走行するワイヤに付着しやすいように、第1冷却液より粘度の高い冷却液を用いてもよい。なお、第2冷却液および第1冷却液としては、粘度が1mPa·sから50mPa·s(動粘度:1mm2/sから50mm2/s)の冷却液を好適に用いることができる。第2冷却液のワイヤへの付着性を高めるためには、5mPa·s以上の粘度(5mm2/s以上の動粘度)を有する冷却液を用いることが好ましい。冷却液の粘度は、後述する水と混合する潤滑剤の濃度を制御することによって調整することができる。\n\n【0048】\n\n第2冷却液は、切削工程の全期間に亘って供給する必要は必ずしも無く、リールボビンに巻かれたワイヤに十分な量の冷却液が付与された状態を維持できるのであれば、第2冷却液を間欠的に供給していても良い。なお、水を主成分とする冷却液(特にアルカノールアミンなどを含むもの)は油性冷却液よりも樹脂に対して悪影響を及ぼすので、樹脂層を用いて砥粒を固定したワイヤを用いる場合には、冷却液の量は少ない方が好ましい。従って、リールボビンに巻かれたワイヤまたはリールボビンの近傍を走行するワイヤに対しては、噴霧法や滴下法を用いて冷却液を供給することが好ましい。特に、噴霧法は少量の冷却液をリールボビンに巻かれたワイヤに均一に供給することができるので好ましい。冷却液の供給量は、ワイヤの種類、長さ、走査速度などに適宜設定すればよく、例えば、50ml/min〜500ml/minの範囲に設定される。但し、電着ワイヤ(例えばNiめ\n\nっき層を用いて砥粒を固定したワイヤ)など水系冷却液に対する耐性に優れたワイヤを用いる場合には、例えばリールボビン全体を冷却液に浸漬してもよい。\n\n【0049】\n\n上記の冷却液は、界面活性剤や、いわゆる「シンセティック(Synthetic)」と呼ばれる合成潤滑剤を水に添加することによって調製される。種類や添加量を調整することによって、所定の動摩擦係数を得ることができる。また、水を主成分とする冷却液を用いると、比較的粘度が低いので、切削によって生成したスラッジから磁石を用いて希土類合金の切削屑を容易に分別することが可能で、冷却液を再利用することができる。また、冷却液の廃棄処理によって自然環境に悪影響を及ぼすことを防止することができる。また、スラッジ中に含まれる炭素の量を減らすことができ、スラッジから回収された切削屑を原料とする磁石の磁気特性を向上することができる。\n\n【0050】\n\nワイヤを高速で走行させながら切削を行うと、冷却液が発泡し、冷却効率が低下することがある。消泡剤を含む冷却液を用いることによって、冷却液の発泡による冷却効率の低下を抑制することができる。さらに、PHが8〜11の範囲内にある冷却液を用いることによって、希土類合金の腐食を抑制することができる。また、防錆剤を含む冷却液を用いることによって、希土類合金の酸化を抑制することができる。これらは、希土類合金の種類や切断条件等を考慮して、適宜調整すればよい。\n\n【0051】\n\nワイヤとしては、ダイヤモンド系砥粒を樹脂で固着したものが好適に用いられる。すなわち、芯線(典型的にはピアノ線)の外周面にダイヤモンド系砥粒を樹脂を用いて固着したワイヤを好適に用いることができる。そのなかでも、樹脂としては、フェノール樹脂、エポキシ樹脂およびポリイミド樹脂を用いることが好ましい。これらの樹脂は、ピアノ線(硬鋼線)の外周面への接着強度が高く、また後述する冷却液に対する濡れ性(浸透性)にも優れる。また、電着法を用いて製造されるワイヤよりも安価であり、希土類合金の切断にかかるコストを低減することができる。なお、ワイヤの芯線は、ピアノ線に限られず、Ni-CrやFe-Ni等の合金、WやMo等の高融点金属から形成されたもの、またはナイロン繊維などの高強度繊維を束ねたものから形成されていても良い。また、砥粒の材料はダイヤモンドに限定されず、SiC、B、C、CBN(Cubic Boron Nitride)等であってもよい。\n\n【0052】\n\n切削しろが少ないという利点を得るためには、ワイヤの外径は、0.3mm以下が好ましく、0.25mm以下であることがさらに好ましい。ワイヤの外径の下限値は、十分な強度が得られるように設定され、且つ、所定の大きさの砥粒を十分な強度で固着するために、0.12mm〜0.20mm程度の直径の芯線が用いられる。砥粒の平均粒径Dは、切削効率の観点から、20μm≦D≦60μmの関係を満足することが好ましく、特に、40μm≦D≦60μmの関係を満足することが好ましい。また、切削効率と切削屑(スラッジ)の排出効率の観点から、ワイヤの走行方向における、互いに隣接する砥粒間の平均距離は、砥粒の平均粒径Dの100%〜600%の範囲内にあることが好ましく、且つ、砥粒がフェノール樹脂層の表面から突出している部分の平均高さは、10μm〜40μmの範囲内にあることが好ましい。このワイヤは、上記の仕様を指定すれば一般のワイヤの製造業者(例えば、株式会社アライドマテリアル)から供給され得る。\n\n【0053】\n\nこのようなワイヤを用いると、良好な切削効率が実現でき、且つ、切削屑の排出性にも優れるので、比較的高い走行速度(例えば1000m/min)でも切削できる。また、上記の冷却液によって効率良く冷却されるので、良好な加工精度で、長期間に亘って安定に希土類合金を切削することができる。水を主成分とする冷却液を用いると、油性の冷却液を用いる場合よりも、走行速度を20〜30%程度速く(例えば、1100m/min〜1200m/min)設定することによって、切削効率を最適化できる。\n\n【0054】\n\n本発明の切断方法に用いる水を主成分とする冷却液は、粘度が低い(動粘度が約1mm2/s)ので、切削屑の排出性が油性の冷却液(一般に動粘度は5mm2/s以上)よりも低い。そこで、切削屑の排出性を高めるために、切削工程において、切削部が槽内に収容された冷却液に浸漬された状態で維持され、且つ、冷却液は、槽の底部から槽内に供給されるとともに、槽の開口部から供給されることによって、槽の開口部から溢れ出る状態に維持されることが好ましい。\n\n【0055】\n\n粘度の低い冷却液中に排出された切削屑は、容易に沈降し、槽の開口部付近に浮遊する切削屑は僅かである。切削部を冷却液中に浸漬した状態で切削するためには、ワイヤは槽の開口部付近の冷却液中を走行するように配置されるので、ワイヤは切削屑の少ない冷却液中を走行し、切削部には切削屑の少ない冷却液が供給される。特に、槽の開口部からも冷却液を供給し、開口部から溢れる状態に維持することによって、切削部に供給される冷却液中の切削屑の量を低下させることができる。さらに、槽の開口部から供給される冷却液の流れによって、ワイヤに付着した切削屑を機械的に洗い流す効果も得られる。冷却液が1分間に溢れ出る量は、槽の容積の50%以上であることが好ましい。また、開口部から供給される冷却液の量は、槽の底部から供給される冷却液の量よりも多いことが好ましい。\n\n【0056】\n\nさらに、槽の開口部にカーテン状の冷却液流(または気流)を形成し、冷却液が槽の開口部から溢れ出るのを抑制することによって、溢れ出る冷却液の液面を槽の壁よりも高くすると、より多くの冷却液が切削部の周囲に供給されることになるので、冷却液中の切削屑の量をさらに低下させることができる。ここでは、ワイヤの走行方向と交差する槽の開口部の辺上にカーテン状に冷却液流を形成した。冷却液流を形成するための吐出圧は、0.2MPa(2kg/cm2)〜1.0MPa(10kg/cm2)の範囲内にあることが好ましく、0.4MPa(4kg/cm2)〜0.6MPa(6kg/cm2)の範囲内にあることがさらに好ましい。この範囲よりも吐出圧が低いと充分な効果が得られないことがあり、この範囲よりも高いとワイヤがたわみ、加工精度が低下することがある。\n\n【0057】\n\nまた、ワイヤを走行させるために設けられるメインローラのうち、槽の両側に配置され、ワイヤの走行位置を規制する一対のメインローラにも冷却液を吐出することが好ましい。これらのメインローラに冷却液を吐出することによって、メインローラの表面に設けられている、ワイヤを案内するための溝を有する有機高分子層(例えばウレタンゴム層)の温度上昇を抑制するとともに、ワイヤまたは案内溝に付着または滞留した切削屑(またはスラッジ)を洗い流すことによって、ワイヤの走行位置がずれたり、ワイヤが溝から外れたりするのを防止することができる。\n\n【0058】\n\nまた、切削工程で生成された、希土類合金の切削屑を含むスラッジと冷却液とからなるダーティ液を回収し、スラッジのなかから希土類合金の切削屑を磁石を用いて分別することによって、冷却液を再利用(例えば、循環的に使用)することができる。上述したように、水を主成分とする冷却液は粘度が低いので、切削屑を容易に分別することができる。また、希土類合金の切削屑を分別することによって、冷却液の廃液処理を容易に且つ環境にダメージを与えないように実施することができる。さらに、切削屑を希土類合金の再生原料として利用することもできる。本発明の切断方法に用いられる冷却液は水を主成分とするので、切削屑から再生された希土類合金に含まれる炭素の量を低くすることが容易なので、希土類磁石の材料として用いられる原料を得ることができる。スラッジからの切削屑の分別方法は、例えば、本願出願人が特願2000-224481号に開示した方法を用いることができる。\n\n【0059】\n\n本発明による切断方法は、上述したように、切断が難しい希土類焼結合金、特に、R-Fe-B系希土類焼結合金の切断に好適に適用される。本発明による切断方法によって切断\n\nされた希土類合金を着磁することによって、希土類磁石が得られる。着磁工程は、切削工程の前に行ってもよいし、後に行ってもよい。R-Fe-B系希土類焼結合金を用いて製造される希土類焼結磁石は、磁気ヘッドの位置決めに用いられるボイスコイルモータ用の材料として好適に用いられる。本発明による切断方法は、特に、本願出願人らによる米国特許第4,770,723号明細書および米国特許第4,792,368号明細書に開示されているR-Fe-B系希土類焼結磁石(合金)の切断に好適に用いられる。さらに、そのなかでも、ネオジム(Nd)、鉄(Fe)およびホウ素(B)を主成分とし、正方晶構造のNd2Fe14B金属間化合物からなる硬い主相(鉄リッチ相)と、Ndリッチな粘りのある粒界相とを有する希土類焼結磁石(合金)(以下、「ネオジム磁石(合金)」と称する。)の切断および製造に好適に適用される。ネオジム磁石の代表的な例として、住友特殊金属社製、商品名NEOMAXがある。\n\n【0060】\n\n本発明による切断方法を採用すると、希土類合金を高精度で且つ効率良く切断できるので、例えば、磁気ヘッドの位置決めに用いられるボイスコイルモータ用の小さな希土類磁石(例えば、厚さが0.5mm〜3.0mm)を高精度で且つ効率良く製造することができる。\n\n【0061】\n\n上述の本発明の実施形態において、さらに、ワイヤを走行させるローラの高分子層に形成された案内溝が、少なくとも一方の斜面がローラの半径方向に対して25°以上45°未満の角度を成す一対の斜面を有する構成を採用し、ワイヤが一対の斜面の間を走行させることによって、水を主成分とする冷却液を用いた場合に発生するワイヤの切断を抑制することができる。勿論、一対の斜面がローラの半径方向に対して25°以上45°未満の角度を成すことが好ましい。特に、ローラ間を走行させられるワイヤの張力は25N以上35N以下であることが好ましい。なお、ローラの表面とは、ローラの軸方向に平行な平面である。\n\n【0062】\n\n(実施形態)\n\n以下、図面を参照しながら、本発明による切断方法の実施形態をさらに具体的に説明する。本実施形態では、上述のネオジム磁石の製造に用いられるネオジム磁石焼結体の切断方法を説明する。\n\n【0063】\n\nネオジム(Nd-Fe-B)焼結磁石を作製する方法を簡単に説明する。なお、磁石材料としての希土類合金を作製する方法は、例えば、上述の米国特許第4,770,723号明細書およびに米国特許第4,792,368号明細書に詳細に開示されている。\n\n【0064】\n\nまず、原料金属を所定の成分比に正確に秤量した後、真空またはアルゴンガス雰囲気で高周波溶解炉にて原料金属を溶解する。溶解した原料金属を水冷の鋳型に鋳込み、所定の組成の原料合金を形成する。この原料合金を粉砕し、平均粒径3〜4μm程度の微粉末を作製する。この微粉末を金型に入れ、磁界中でプレス成形する。このとき必要に応じて微粉末を潤滑剤と混合してからプレス成形を行う。次に、約1000℃〜約1200℃程度の焼結工程を行えばネオジム磁石焼結体を作製することができる。この後、磁石の保磁力を向上させるために約600℃での時効処理を実行し、希土類磁石焼結体の作製を完了する。焼結体のサイズは、例えば30mm×50mm×50mmである。\n\n【0065】\n\n得られた焼結体の切断加工を行い、焼結体から切断した複数の薄板(基板またはウェハと称される場合がある)を形成する。得られた焼結体の薄板のそれぞれに対して研磨による仕上げ加工を行い、寸法と形状を整えた後、長期的な信頼性を向上させるため、表面処理を施す。この後、着磁工程を実行した後、検査工程を経てネオジム永久磁石が完成する。なお、着磁工程を切断工程の前に行ってもよい。\n\n【0066】\n\n次に、本発明による切断方法を図1から図4を参照しながら説明する。\n\n【0067】\n\n図1は、本発明による実施形態の切断方法を実行するために好適に用いられるワイヤソー装置100を示す概略構成図である。\n\n【0068】\n\nワイヤソー装置100は、3本のメインローラ10a、10bおよび10cと、一対のリールボビン40aおよび40bとを有している。冷却液を収容する槽30の下部に設けられているメインローラ10aが駆動ローラで、槽30の両側に設けられているメインローラ10bおよび10cは従動ローラである。ワイヤ20は、往復走行しながら、例えば、一方のリールボビン40aから他方のリールボビン40bに巻き取られる。このとき、リールボビンの40aの巻き取り時間を他方のリールボビン40bの巻き取り時間よりも長くすることによって、ワイヤ20を往復走行させながら、リールボビン40a側に新しいワイヤ20を供給することができる。ワイヤ20の走行速度は、例えば、200m/minから1500m/minの範囲であり、新線を供給する速度は、例えば、0m/min〜5m/minの範囲である。\n\n【0069】\n\nメインローラ10a、10bおよび10cの間には、ワイヤ20が例えば150列に張設される。ワイヤ20の走行位置を決めるために、メインローラ10a、10bおよび10cの表面には、ワイヤ20を案内するための溝(例えば深さ約0.6mm、不図示)を有する有機高分子層(例えばウレタンゴム層)が設けられている。ワイヤ20の列間の間隔は、この案内溝のピッチによって決められる。案内溝のピッチは、ワークから切り出すべき板の厚さに応じて設定される。\n\n【0070】\n\nリールボビン40aおよび40bの近傍には、巻き取り位置を調整するためのトラバーサ42aおよび42bがそれぞれ設けられている。リールボビン40aおよび40bからメインローラ10aに至るまでの経路中には、それぞれの側に5つのガイドローラ44と、1つのテンションローラ46とが設けられており、ワイヤ20を案内するとともに、その張力が調整される。ワイヤ20の張力は、種々の条件(切削長、切断速度、走行速度など)に応じて適宜変更され得るが、例えば20N〜40Nの範囲に設定される。\n\n【0071】\n\nなお、リールボビン40aおよび40bに巻き取られたワイヤ20が互いに摩擦し合うことによって受けるダメージは、ワイヤ20の張力にも依存する。そこで、リールリボン40aおよび40bに巻き取るための張力を低減する機構を設けることが好ましい。巻き取り張力を低減する機構としては、例えば、特開平9-29607号公報、特開平9-314548号公報、特開平10-166353号公報や特開平10-277914号公報に記載されているような機構を用いることができる。リールボビン40aおよび40bにおける巻取り張力は7N以上15N以下の範囲内にすることが好ましい。\n\n【0072】\n\nワイヤソー装置100は、さらにリールボビン40aおよび40bに巻き取られているワイヤ20に冷却液を供給するための噴霧装置80aおよび80bを備えている。本実施形態では、樹脂で砥粒を固定したワイヤ20を用いるので、少量の冷却液を効率的にワイヤ20に付与するために噴霧法を採用する。\n\n【0073】\n\n噴霧装置80aおよび80bは、例えば、図2に示したように、冷却液(例えば200ml/min)とエアー(例えば0.4MPa)と噴霧ノズルに供給することによって、後述する冷却液60切削部に供給される後述の冷却液と同じものを用いる。リールボビン40a、40b(例えば、芯外径170mm、高さ340mm)に巻き付けられているワイヤ20の全体に亘って冷却液を噴霧することができる。ここでは、冷却液として、後述する冷却液タンク60に貯蔵されている冷却液を共通に用い、吐出ポンプによって配管を介して噴霧装置80aおよび80bまでそれぞれ圧送される。勿論、噴霧装置80aおよび\n\n80bに冷却液を供給するために冷却液タンクを別途設け、切削部に供給する冷却液と異なる冷却液を用いてもよい。\n\n【0074】\n\nさらに、冷却液によるワイヤ20へのダメージおよび/または冷却液の使用量を減らすために、冷却液を噴霧する領域を限定してもよい。図1に示したトラバーサ42aおよび42bの動きに同期させ、巻き取り(および送り出し)動作が行われ、ワイヤ20同士の摩擦が発生している領域に選択的に冷却液を供給する機構としても良い。特に、例示したようにワイヤ20を往復走行させる場合、走行方向の反転時にリールボビン40aおよび40bに巻かれたワイヤ20同士に強い摩擦力が発生するので、少なくともこの領域に冷却液を供給することが好ましい。\n\n【0075】\n\n冷却液を供給する手段は、例示した噴霧装置80aおよび80bに限られず滴下装置などを用いても良い。比較的多くの冷却液を供給する場合には、必要に応じて、リールボビン40aおよび40bの下部に余剰の冷却液を回収、再利用するための回収用パンを設けることが好ましい。冷却液の回収経路にはフィルタおよび/またはマグネットセパレータを設け、回収した冷却液に含まれる切屑を分別除去することが好ましい。\n\n【0076】\n\nなお、本実施形態では、リールボビン40aおよび40bに巻き取られたワイヤ20に冷却液を噴霧する構成を例示したが、リールボビン40aおよび40bに巻き取られる直前(または送り出された直後)のワイヤ20に対して冷却液を供給しても良い。互いに接触するワイヤの少なくとも一方が濡れた状態であれば砥粒へのダメージを小さくすることができる。また、リールボビン40aおよび40bから送り出された直後のワイヤ20に冷却液を供給することによって、ワイヤ20が、ガイドローラ44、テンションローラ46やメインローラ10a、10bおよび10cの案内溝と接触することによって生じる損傷を低減することもできる。\n\n【0077】\n\n上述したようにして作製された焼結体ワーク50は、以下の様にして、ワイヤソー装置100にセットされる。\n\n【0078】\n\n複数のワーク50は、例えばエポキシ系またはホットメルト系の接着剤(不図示)によって相互に固着され、複数のブロックとして組み立てられた状態で、炭素ベースプレート52を間に介して、鉄製のワークプレート54に固定される。\n\nワークプレート54、ワーク50の各ブロックおよび炭素ベースプレート52も接着剤(不図示)によって互いに固着されている。炭素製ベースプレート52は、ワーク50の切断加工が終了した後、ワークプレート54の下降動作が停止するまでワイヤ20による切断加工を受け、ワークプレート54を保護するというダミーとして機能する。\n\n【0079】\n\n本実施形態では、ワイヤ20の走行方向に沿って計測した各ブロックのサイズが100mm程度になるように各ブロックの大きさを設計している。従って、ここでは、ワイヤ20による切削長さは、約200mmである。本実施形態では上述のようにワーク50を複数のブロックに分割して配置しているが、ワイヤ20の走行方向におけるサイズをどの程度の大きさに設定すべきかは、冷却液の動摩擦係数や走行速度によっても変化する。また、各ワーク50の大きさによって、ひとつのブロックを構成するワーク50の数や配置も変化する。これらを考慮して、適宜最適なサイズのブロックに分けてワーク50を配置すればよい。\n\n【0080】\n\n上述のようにセットされたワーク50は、モータ58を備える昇降装置によって下降され、走行するワイヤ20に押し付けられ、切削加工される。ワーク50の下降速度は、種々の条件に応じて変化し得るが、例えば、20mm/hr〜50mm/hrの範囲内に設定される。\n\n【0081】\n\n冷却液タンク60に貯蔵されている冷却液は、吐出ポンプ62によって、配管63を介して圧送される。配管63は、途中で、下部配管64と上部配管66とに分岐されている。下部配管64および上部配管66には、それぞれへの冷却液の流量を調整するためのバルブ63bおよび63aが設けられている。下部配管64は、切削部を浸漬するための槽30の底部に設けられた下部ノズル64aに接続されている。上部配管66は、槽30の開口部から冷却液を供給するための上部ノズル66a、66bおよび66cと、メインローラ10bおよび10cをそれぞれ冷却するために設けられた上部ノズル66dおよび66eとに接続されている。\n\n【0082】\n\n槽30には、上部ノズル66a、66bおよび66cと下部ノズル64aとから冷却液が供給され、少なくとも切削工程の間は、図1中に矢印Fで示したように、冷却液が槽30の開口部から溢れ出る状態に維持される。槽30から溢れ出た冷却液は、槽30の下方に設けられた回収用パン70によって回収タンク72に導かれ、蓄積される。回収された冷却液は、例えば図1に示したように、吐出ポンプ74によって循環用配管76を介して、冷却液タンク60に送られる。循環用配管76の途中には、フィルタ78が設けられており、回収された冷却液に含まれる切削屑が分別除去される。回収方法は、これに限られず、磁力を利用して切削屑を分別する機構を設けてもよい(例えば特願2000-224481号参照)。\n\n【0083】\n\n次に、図3を参照しながら、本発明による切断工程をさらに詳細に説明する。\n\n【0084】\n\n槽30は、ワイヤ20の走行方向と交差する側壁の開口部付近に補助壁32を有している。この補助壁32は、プラスチック板(例えばアクリル板)で形成されており、図3中に破線で示した無負荷時におけるワイヤの走行位置と近接するように設けられている。切断するためにワーク50を下降し、ワイヤ20に接触させるとワイヤ20はたわみ、図3中に実線で示したように、槽30内の冷却液に切削部が浸漬された状態となる。このとき、ワイヤ20がたわむに連れて、ワイヤ20は補助壁32を切削し、スリットを形成する。ワイヤ20による切削が定常状態になると、たわみ量は一定し、ワイヤ20は補助壁32に形成されたスリット内を通過しながら、ワーク50を切削する。従って、補助壁32に形成されたスリットは、ワイヤ20の走行位置を規制するように機能し、加工精度の安定にも寄与する。\n\n【0085】\n\n槽30は、例えば約35l(リットル)の容量を有しており、切削工程中は、下部ノズル64aから約30l/minの流量で冷却液が供給され、上部ノズル66a、66bおよび66cから約90l/minの流量で冷却液が供給され、常に冷却液が開口部から溢れ出る状態に維持される。ワイヤ20に冷却液を供給することだけを考えると、図3に示したように、切削中はワイヤ20がたわむので、冷却液を溢れさせる必要は必ずしも無いが、例示するネオジム磁石焼結体を切断するときには切削屑の排出性を向上するために、上記のような構成を採用することが好ましい。\n\n【0086】\n\n切削屑の排出性を高めるためには、切削部付近の冷却液内に含まれる切削屑の量を減らすことが有効である。十分な排出性を得るためには、冷却液が1分間に溢れ出る量は、槽の容積の50%以上であることが好ましい。さらに、新鮮な冷却液は、槽30の底部よりも開口部から多く供給することが好ましい。水を主成分とする粘度の低い冷却液を用いているので、冷却液中に排出された切削屑は容易に沈降するので、槽30の底部から多くの冷却液を供給すると、沈降した切削屑が切削部近傍に浮遊する原因となるので好ましくない。\n\n【0087】\n\nまた、開口部からワイヤ20(つまり切削溝)に供給される新鮮な冷却液が占める割合を\n\n多くするために、走行するワイヤ20よりも上方から供給される冷却液を多くすることが好ましい。すなわち、槽30の開口部からも冷却液を供給し、開口部から溢れる状態に維持することによって、切削部に供給される冷却液に含まれる切削屑の量を低下させることができる。さらに、槽30の開口部から供給される冷却液の流れによって、ワイヤ20に付着した切削屑を機械的に洗い流す効果も得られる。\n\n【0088】\n\nまた、上述した補助壁32は、ワイヤ20によって形成されたスリット以外の部分は、槽30の側壁として機能するので、冷却液の液面Sを高く保つように機能する。さらに、槽30の開口部のワイヤ20の走行方向と交差する辺に、ノズル66bおよび66cを用いて、カーテン状の冷却液流を形成し、冷却液が槽30の開口部から溢れ出るのを抑制する。これにより、溢れ出る冷却液の液面Sを槽30の補助壁32よりも高くすると、より多くの冷却液が切削部の周囲に供給されることになるので、冷却液中の切削屑の量をさらに低下させることができる。冷却液流を形成するための吐出圧は、0.2MPa(2kg/cm2)〜1.0MPa(10kg/cm2)の範囲内にあることが好ましく、0.4MPa(4kg/cm2)〜0.6MPa(6kg/cm2)の範囲内にあることがさらに好ましい。この範囲よりも吐出圧が低いと充分な効果が得られないことがあり、この範囲よりも高いとワイヤ20にぶれが発生し、その結果、加工精度が低下することがある。\n\n【0089】\n\nまた、槽30の両側に配置され、ワイヤ20の走行位置を規制する一対のメインローラ10bおよび10cにも冷却液を吐出することが好ましい。これらのメインローラ10bおよび10cに冷却液を吐出することによって、メインローラ10bおよび10cの表面に設けられている、ワイヤ20を案内するための溝を有する有機高分子層(例えばウレタンゴム層)の温度上昇を抑制するとともに、ワイヤ20または案内溝に付着または滞留した切削屑(またはスラッジ)を洗い流すことができるので、ワイヤ20の走行位置がずれたり、ワイヤ20が溝から外れたりするのを防止することができるとともに、排出性を向上する効果も得られる。\n\n【0090】\n\n水を主成分とする冷却液に添加される界面活性剤としては、アニオン系として、脂肪酸石鹸やナフテン酸石鹸等の脂肪酸誘導体、又は長鎖アルコール硫酸エステルや動植物油の硫酸化油等の硫酸エステル型、又は石油スルホン酸塩等のスルホン酸型、非イオン系として、ポリオキシエチレンアルキルフェニルエーテルやポリオキシエチレンモノ脂肪酸エステル等のポリオキシエチレン系、ソルビタンモノ脂肪酸エステル等の多価アルコール系、又は脂肪酸ジエタノールアミド等のアルキロールアミド系を用いることができる。具体的には、ケミカルソリューションタイプのJP-0497N(カストロール社製)を水に2重量%程度添加することによって、動摩擦係数を所定の範囲内に調整することができる。\n\n【0091】\n\nまた、シンセティックタイプ合成潤滑剤としては、シンセティック·ソリューションタイプ、シンセティック·エマルションタイプおよびシンセティックソリュブルタイプを用いることができ、そのなかでも、シンセティック·ソリューションタイプが好ましく、具体的には、グリコールおよびアルカノールアミン等を含む潤滑剤(ユシロ化学工業社製#830および#870)や、シンタイロ9954(カストロール社製)を挙げることができる。いずれも、水に2重量%〜10重量%程度添加することによって、動摩擦係数を好適な範囲内に調整することができる。\n\n【0092】\n\nまた、錆止め剤を含有させることで、希土類合金の腐食を防止することができる。特に、R-Fe-B系希土類合金を切断する際には、PHを8〜11とすることが好ましい。錆止め剤としては、有機系として、オレイン酸塩や安息香酸塩等のカルボン酸塩、又はトリエタノールアミン等のアミン類、無機系として、りん酸塩、ホウ酸塩、モリブデン酸塩、タングステン酸塩、又は炭酸塩を用いることができる。\n\n【0093】\n\nまた、非鉄金属防食剤としては、例えばベンズトリアゾール等の窒素化合物を、防腐剤としては、ヘキサハイドロトリアジン等のホルムアルデヒド供与体を用いることができる。\n\n【0094】\n\nまた消泡剤としては、シリコーンエマルジョンを用いることができる。消泡剤を含有させることで、冷却液の泡立ちを少なくし、冷却液の浸透性をよくし、冷却効果を高め、ワイヤ20での温度上昇を防ぎ、ワイヤ20の温度の異常上昇や異常摩耗が起こりにくくなる。\n\n【0095】\n\n図4を参照しながら、本実施形態で好適に用いられるワイヤ20の構造を説明する。なお、図中では、ワイヤ20の一点鎖線で示した中央線から下半分は簡略化している。\n\n【0096】\n\nワイヤ20としては、芯線(ピアノ線)22の外周面にダイヤモンド砥粒24を樹脂層26で固着したものが好適に用いられる。そのなかでも、樹脂としてフェノール樹脂、エポキシ樹脂またはポリイミド樹脂を用いることが好ましい。これらの樹脂は、ピアノ線(硬鋼線)22の外周面への接着強度が高く、また上述した冷却液に対する濡れ性(浸透性)にも優れる。また、砥粒としては、ダイヤモンド砥粒の他にSiCなどを用いてもよい。\n\n【0097】\n\n好適なワイヤ20の具体例としては、直径が約0.18mmのピアノ線22の外周に、平均粒径が約45μmのダイヤモンド砥粒を、フェノール樹脂層26で固着し、外径が約0.24mmのワイヤ20が挙げられる。また、切削効率と切削屑(スラッジ)の排出効率の観点から、ワイヤ20の走行方向(軸方向:図中の一点破線に平行な方向)における、互いに隣接する砥粒24間の平均距離は、砥粒の平均粒径Dの100%〜600%の範囲内にあるものが好ましい。さらに、砥粒22がフェノール樹脂層26の表面から突出している部分の平均高さは、10μm〜40μmの範囲内にあることが好ましい。このようなワイヤ20は、砥粒22間に適度な大きさの空間(「チップポケット」と呼ばれることもある)28が形成されているので、良好な切削効率を有するとともに、良好な排出性を有する。\n\n【0098】\n\n上述のワイヤソー装置100で、ワイヤとして上述の仕様を満足するアライドマテリアル製のワイヤを用いて、上述のネオジム磁石合金を切断した場合の効果を検証した。冷却液としてユシロ化学製#830の約10%水溶液(液温23℃)を供給量200ml/minでリールボビンに噴霧しながら、最大走行速度1100m/分、張力30N、切り込み量40mm/時間、新線供給量2m/分の条件で、ワイヤを双方向に走行させながら切断した。その結果、リールボビン40aおよび40b(ワイヤ長38km)に冷却液を噴霧しない場合に比べ、砥粒および樹脂層の脱離量が3分の1程度に低減した。ユシロ化学製#830の濃度を調節することによって得られた、動摩擦係数0.11〜0.13、表面張力33〜36mN/m、粘度1〜4mPa·s(動粘度1〜4mm2/s)の冷却液を用いた場合にほぼ同様の結果が得られた。\n\n【0099】\n\nまた、冷却液を噴霧する前にワイヤの表面をグリコールで被覆することによって、樹脂剥がれが抑制されることを確かめた。ワイヤ表面のグリコールによる被覆は以下のようにして実行した。\n\n【0100】\n\n上記ワイヤ(ワイヤ外径0.24mm)をリールボビンに巻き取る際に、巻き取り張力を約10N、巻き取りピッチを約0.46mmとして、巻き取りながら、グリコールを染み込ませた布を用いて、ワイヤの表面をグリコール(例えば、ポリオキシアルキレンの原液)で被覆した。\n\n【0101】\n\nグリコール被覆したワイヤを用いることによって、グリコール被覆を施さないワイヤを用いた場合、樹脂剥がれの発生率が約20%(382/1900)であったものを、約2%\n\n(3/237)まで低下できた。なお、新線供給量を3m/分とした以外の条件は、上記と同じである。また、表面をグリコールを含む潤滑剤で被覆することによって、ワイヤを保存している期間、保存環境による、樹脂剥がれの発生率のばらつきを低減する効果も認められた。ここで、樹脂剥がれの評価は、以下のようにして行った。上記条件でネオジム磁石合金を5時間切断加工した後で、切断に使用したワイヤ(約900m)に5mm以上の樹脂剥がれが発生したものを樹脂剥がれ不良発生とした。\n\n【0102】\n\nグリコールは非常に親水性(保水性)が強いので、樹脂層が空気中に含まれている水を吸収するのを防止するように作用すると考えられる。グリコールのこの効果を効率的に発揮させるためには、グリコールを直接ワイヤの表面に付与することが好ましいが、水で希釈して用いても良い。この場合、付与方法にも依存するが、グリコール濃度が50質量%以上の水溶液として用いることが好ましい。\n\nここで、水溶液とするのは、冷却液として水系冷却液を用いるので、冷却液と混合した際に、冷却液の作用に悪影響を及ぼさないためである。グリコールは水に対する溶解性に優れ、且つ、潤滑性にも優れるので、水系冷却液と混合されても、悪影響を及ぼすことがない。\n\n【0103】\n\nなお、ここでは、グリコールを含む潤滑剤で表面を被覆したワイヤを用い、さらにリールボビンに冷却液を噴霧しながら、切断工程を実行する実施形態を例示したが、リールボビンに冷却液を噴霧する工程を省略しても、グリコールを予め塗布することによって樹脂剥がれを抑制する効果を得ることができる。もちろん、例示したように、併用することが最も好ましい。\n\n【0104】\n\n次に、実施形態1のワイヤソー装置100のメインローラ10a、10bおよび10cの好ましい構造を説明する。\n\n【0105】\n\n水を主成分とする冷却液を用いると、油性の冷却液を用いた場合よりもワイヤの断線率が増加(すなわち、より短い時間で断線)するとともに、加工精度が低下するという問題が発生する。本発明者が種々検討した結果、図5に模式的に示すように、ローラ10a、10bおよび10cの高分子層10Pに形成された案内溝10Gの断面形状を、案内溝10Gが有する一対の斜面10Sがローラ10aの半径方向10Rに対して25°以上45°未満の角度(以下、「傾斜角(α)」という。)を成す構成を採用することによって、ワイヤ20の断線の発生を抑制するとともに、十分な加工精度を得ることができることがわかった。傾斜角は、30°以上35°以下であることがさらに好ましい。\n\n【0106】\n\nなお、例示したように、案内溝10Gが有する一対の斜面10Sの両方がローラ10aの半径方向10Rに対して上記の範囲の傾斜角を有することが好ましいが、一対の斜面10Sの内の少なくとも一方が上記の範囲の傾斜角を有していれば、断線の発生を抑制する効果および十分な加工精度を得ることができる。\n\n【0107】\n\n従来は、例えば図6に示すように、案内溝10Gの斜面10Sがローラの半径方向10Rに対して45°以上の傾斜角を成す構造を採用していた。これは、案内溝10Gから効率よくスラッジを十分に排出させるためであり、特に、希土類合金は脆性的な破壊を起こす主相と延性的な破壊を粒界相とを有するために切削抵抗が高く、且つ、比重が大きいのでスラッジの排出性が悪いため、スラッジの排出性を高めるために、傾斜角を45°超としていた。\n\n【0108】\n\nしかしながら、本発明者が検討した結果、斜面10Sの傾斜角を45°よりも大きくすると、断線発生率はそれほど低下せず、むしろ、加工精度が低下するという問題が発生することがわかった。以下に、図7を参照しながら、この現象を説明する。\n\n【0109】\n\n図7は、ローラの案内溝の斜面10Sの傾斜角とワイヤの捻れ角との関係を示すグラフである。捻れ角Ωは、ワイヤ20がロールから受ける捻回力に比例し、捻れ角Ω=360°のときワイヤが一回捻回されていることを示す。なお、図7に示した結果は、以下で説明する構成についての力学的なモデル計算から求めた。なお、斜面10Sの傾斜角は、両側の斜面で等しいとした。結果を示している。\n\n【0110】\n\n450mmの間隔(スパン)で配置した一対のローラ(図1のローラ10bと10d)直径170mm)の間に、ワイヤ20を張力30N(3kgf)で200条配設する。新線供給量は2m/分で、120秒サイクルで往復走行させる。このとき、ワイヤ20は、約190回往復走行された後、ローラから脱出することになる。\n\n【0111】\n\nここで、種々実験した結果、1スパン(450mm)の間でワイヤが5回(Ω=1800°)捻回する力を受けると、ワイヤ20が200条分走行する間に、約500回捻回した。すなわち、200条×5回=1000回分捻回する力を受けたとき、その約50%分が実際の捻回として蓄積された。そこで、図7における縦軸の捻れ角Ωは、力学的なモデル計算から求められる捻回力に対応する捻れ角に0.5を乗じた値を示している。また、静的な捻れ破断強度試験から、ワイヤ20に実際に蓄積される捻れ角が1800°(5回捻回)となったときに、10%の確率でワイヤが破断すると見積もった。\n\n【0112】\n\n図7からわかるように、捻回力(捻れ角)は、溝10Gの傾斜角αが大きくなるにつれて単調に減少する。単純に捻回力のみよるワイヤ20の破断を考えると、ワイヤ20が細い場合(直径d=0.19mm)には傾斜角を10°以上、太い場合(直径が0.25mm)でも傾斜角を25°以上とすれば、ワイヤ20の破断を抑制できることになる。\n\n【0113】\n\nしかしながら、実験によると、いずれのワイヤ20を用いた場合も、傾斜角が45°以上になると、断線発生率があまり低下しなかった。また、傾斜角が45°以上になると加工精度が低下するという問題が発生した。\n\n【0114】\n\nこれは、傾斜角が大きくなると、案内溝10Gの幅10W(図5参照)が大きくなり、ワイヤ20が案内溝10G内で振れたり、更には、隣接する案内溝10Gに飛び移ったりするため、ワイヤ20に掛かる張力や念回力が不均一となり、局所的に大きな応力が発生する結果、ワイヤ20の断線が発生するものと考えられる。また、ワイヤ20が案内溝10G内を安定に走行しない結果、加工精度が低下するものと考えられる。なお、実験には、高分子層10Pとしてウレタンゴム層を用い、冷却液としてはユシロ化学工業社製#830の約10%水溶液を用いた。また、実施形態1と同じ希土類焼結磁石のワークピースを切断した。\n\n【0115】\n\n上述の結果から、案内溝10Gの斜面10Sの傾斜角は、25°以上45°未満であることが好ましい。なお、ワイヤ20の断線をなるべく抑制するためには、念回力が低下するように、傾斜角を30°以上とすることが好ましく、高い加工精度を得るためには傾斜角を35°以下とすることが好ましい。また、なお、案内溝10Gの底部10Bは、ワイヤ20の半径よりもやや小さめの曲率半径に加工しておくことが好ましい。\n\n【0116】\n\nここでは、ワイヤ20の張力を20Nとした場合の結果を説明したが、ワイヤの張力が20N以上35N以下である場合にほぼ同様の結果を得ることができる。\n\n【0117】\n\nワイヤソー装置100および200を例示しながら本発明の実施形態を説明したが、本発明はこれに限られず、単一のリールボビンを用いるエンドレス型のワイヤソー装置(例えば特開平11-198018号公報参照)に適用することができる。\n\n【0118】\n\n上述したように、本発明の実施形態によると、ワイヤソー装置で水を主成分とする冷却液を用い希土類合金を切断する際のワイヤの寿命を長くすることが可能となる。希土類合金は、脆性的な破壊を起こす硬い主相と延性的な破壊を起こす粒界相とを有するため、ワイヤソーを用いて切断することが特に難しいので、本発明の効果が特に顕著である。本発明の実施形態による切断方法を採用すると、希土類合金を切断する場合に限られず、シリコン、サファイア、水晶、ガラス、ネオジム、フェライト等の硬脆材料を、水を主成分とする冷却液を用いて切断する場合にも、ワイヤの寿命を長くすることができる。\n\n【0119】\n\n【発明の効果】\n\n上述したように、本発明によると、水を主成分とする冷却液を用いてワイヤソー装置で切断する際のワイヤの寿命を長くすることが可能となる。\n\n【0120】\n\n本発明の切断方法を用いると、水を主成分とする冷却液を用いて、高い加工精度で、且つ、少ない切削しろで、希土類合金や他の硬脆材料を切断することができる。従って、材料の歩留まりが向上するとともに、冷却液として水を主成分とする冷却液を用いるので、環境に優しく、また、切断後の洗浄工程を簡略化することが可能で、さらに、廃液の処理のコストを低減することもできる。\n\n【0121】\n\n本発明の切断方法は、シリコンなどの硬脆材料よりも切断し難い希土類合金を切断する場合に顕著な効果を奏する。希土類合金の材料は高価なので、材料の歩留まりを向上することによるコストメリットが大きい。また、廃液から切削屑を分別し、冷却液の循環使用を容易に実現できるので、環境に優しく、また、廃液の処理のコストを低減することができる。従って、希土類合金の加工コストが低減され、切断品、例えば、磁気ヘッド用のボイスコイルモータを低価格で製造することができる。\n\n【図面の簡単な説明】\n\n【図1】本発明による実施形態の切断方法を実行するために好適に用いられるワイヤソー装置100を示す模式図である。\n\n【図2】ワイヤソー装置100におけるリールボビン40aおよび40bに巻かれたワイヤ20に冷却液を供給するための構造を模式的に示す図である。\n\n【図3】図1に示したワイヤソー装置100の切削部近傍の構成を示す模式図である。\n\n【図4】本発明による実施形態の切断方法を実行するために好適に用いられるワイヤ20の断面構造を模式的に示す図である。\n\n【図5】ワイヤソー装置100および200に好適に用いられるローラの断面構造を模式的に示す図である。\n\n【図6】従来のローラの断面構造を模式的に示す図である。\n\n【図7】ローラの案内溝の斜面10Sの傾斜角とワイヤ捻れ角との関係を示すグラフである。\n\n【符号の説明】\n\n10a、10b、10c  メインローラ\n\n20  ワイヤ\n\n30  槽\n\n40a、40b  リールボビン\n\n42a、42b  トラバーサ\n\n50  ワーク\n\n60  冷却液タンク\n\n70  回収用パン\n\n80a、80b  噴霧装置', '【0001】\n\n技术领域\n\n本发明涉及一种使用钢丝锯的切割方法和制造线锯装置以及稀土磁铁的方法。\n\n【0002】\n\n发明背景\n\n例如,使用稀土合金,例如,作为强大的磁体材料。通过磁化稀土合金获得的稀土磁铁例如适合使用例如用于定位磁记录装置的磁头的语音线圈电机的磁体。\n\n【0003】\n\n作为切割稀土合金的铸锭(含有烧结体)的方法,一种使用例如旋转切片叶片切割铸锭的技术。\n\n它已经完成。然而,根据切割叶片的切割方法,由于切割刀片的厚度相对较大,钻孔将增加,并且稀土合金材料的产率低,稀土合金产品的成本(例如稀土磁铁)降低。这是一个因素。\n\n【0004】\n\n存在使用电线作为切割方法的方法,该切割方法比切片刀片更小。例如,专利文献1使用导线(称为“固定磨料线”(有时称为“固定磨料线”(有时称为“固定磨料线”),在高强度的圆周表面上具有粘合层芯线。硅,蓝宝石,晶体,它公开了可以切割诸如玻璃,钕或铁氧体的硬质和脆性材料。\n\n【0005】\n\n如果通过如上所述的固定磨料可以从稀土合金的芯片(锭)同时制造预定厚度的大量板,则稀土磁铁的制造成本显着降低。然而,仍然没有报告使用固定的研磨线在大规模生产水平下切割稀土合金。\n\n【0006】\n\n从各种考虑的结果,稀土合金的机械性能,特别是稀土合金(以下称为“稀土烧结合金”(以下称为“稀土烧结合金”)。它可以显着变化从那样。具体而言,稀土烧结合金主要引起脆性破坏(R)2Fe.14B相)和晶界相(R富相)导致延展性击穿,因此与硅代表的硬和更多的纤毛仪不同,难以切割。也就是说,与切割诸如硅的硬质和脆性材料如硅的情况相比,切削电阻高,因此热值也很大。另外,稀土合金的比重大于例如约7.5和硅的材料,并且通过切割产生的切割废物(污泥)难以从切割部分排出。\n\n【0007】\n\n因此,为了有效地切割稀土合金,具有高处理精度,切削电阻充分降低,并且在切割时产生的热量有效地加热,即切割部分是有效的冷却。。此外,有必要有效地排出切割产生的切割废物。\n\n【0008】\n\n通过充分供应具有优异润滑性的冷却剂(也称为“切割液体”),可以减少切割电阻,并且切割过程中产生的热量可以有效地耗散。。作为本发明人的实验的结果,如果使用油性冷却溶液用足够量的冷却剂润湿线,则可以通过线行进将冷却剂充分地供应到窄切割部分。\n\n【0009】\n\n然而,油型冷却剂是昂贵的处理废液,以免引起环境破坏,并且难以将废物分离在废液中,并重用废液和切割乳房存在困难的问题。此外,在重新储存稀土合金的切割乳房时,还存在原料中的碳含量增加并且磁性不可用的问题。考虑到这些,水(或水溶性冷却剂)优选作为冷却剂,但是当水用作冷却溶液时,水是粘度(动态粘度:1.0mm2由于可以将足够的量连接到待行驶的线上,因此即使用水润湿,也可以将足够量的水供应到切割部分。\n\n【0010】\n\n美国专利No.它披露它可以完成。然而,根据本发明人的实验,即使在溢出的水上行驶的同时切割稀土合金,在溢出的水中行进(例如,专利文献1),磨料颗粒在壳体中脱落并且可怕,发生钢丝断裂。这种故障也发生在电线的行驶速度约为800米/分钟。即使采用上述方法,这也是高的切削电阻。\n\n被认为是不充分提供给切割部分。\n\n【0011】\n\n作为本发明人的各种考虑因素,已经发现,表面张力在25℃下可以有效地冷却电线(日本专利申请No.2000-358462和日本专利申请No.2001-318867)。与水相比,具有表面张力或上述范围内的表面张力或动态摩擦系数的冷却剂在稀土合金和/或导线上具有优异的润湿性(或熟悉),因此切割部分(稀土合金和彼此接触。切割稀土合金的部分。还认为冷却剂有效地渗透到切割槽上。当然,含有水作为主要成分的冷却溶液比油基冷却流体(例如矿物油)高度冷却,因此冷却效率高。在本说明书中,“基于水的冷却流体”被称为冷却剂,其总量为70重量%以上是水。\n\n【0012】\n\n专利文献1\n\nJP-A-11-198020\n\n【0013】\n\n本发明要解决的问题\n\n然而,由于进一步考虑本发明人,当使用主要由水组成的冷却剂时,磨粒从卷绕线的卷轴中从线剥离,导致磨粒被去皮出于电线(存在的问题)出现的问题。\n\n【0014】\n\n这是因为主要由水组成的冷却剂是与电线的低粘合性,并且与油基冷却剂相比,易于蒸发,因此当它缠绕在卷轴线轴上时,稍微或大部分地缠绕在线的冷却剂不能降低导线之间的摩擦引起的发热和机械摩擦力。也就是说,猜测,虽然冷却剂被供应到切割部分中的线,但是在向卷轴线轴行驶期间将冷却剂复制。\n\n【0015】\n\n另外,电线之间的摩擦不会导致磨粒的颗粒,从而将机械损坏施加到磨料上,因此切割精度降低或降低切割效率。如果甚至更差,磨料可以用树脂层(粘合层)剥离。也就是说,当使用主要由水组成的冷却剂时,由于卷轴线轴中的电线之间的摩擦,导线的寿命较短。由于固定磨料线相对昂贵,因此希望增加导线的寿命以降低切割成本。\n\n【0016】\n\n此外,当树脂层通过形成在芯线的外周表面上的树脂层固定的导线时,可能发生从芯线剥离(拆卸)的“树脂剥离”。由于各种考虑因素,这种树脂剥离的原因不仅是由于由于上述接触摩擦而导致的损坏,而且还有一种冷却剂,其树脂层主要由水(尤其是碱性防锈剂如胺还发现它还发现它也是由冷却液损坏的因素)。\n\n【0017】\n\n如上所述,特别地,稀土合金难以使用钢丝锯切割,但是当使用过的冷却剂主要由水组成时,缩短电线寿命的问题是硅,蓝宝石,晶体,玻璃,它在切割硬质和脆性材料(如钕和铁素体)时也发生。\n\n【0018】\n\n本发明已经鉴于上述点,并且其主要目的是在用主要由水组成的冷却剂用电线锯装置切割时延长导线的寿命。\n\n【0019】\n\n[解决问题的手段]\n\n本发明的切割方法是使用具有由形成在芯线的外周表面上形成的树脂层固定的磨料的切割方法,并且表面覆盖含有乙二醇的润滑流体到卷轴线轴。具有制备步骤的第一冷却剂和缠绕在卷轴线轴上的缠绕和缠绕的导线(作为芯片)是水在由电线切割的部分中的水的主要成分。同时提供工件导线行进,实现上述目的。特别地,抑制了树脂剥离问题的发生。\n\n【0020】\n\n优选地,进一步包括将主要由水组成的第二冷却剂的步骤,该步骤主要由水与绕线缠绕在卷轴围绕卷轴缠绕的线上的导线或卷轴滚筒。\n\n【0021】\n\n第二冷却剂优选在25℃下具有0.3或更小的稀土合金的动态摩擦系数。\n\n【0022】\n\n第二冷却剂可包含乙二醇。\n\n【0023】\n\n通过喷涂可以将第二冷却剂提供给电线。\n\n【0024】\n\n在制备步骤中,优选的是,当线缠绕到卷轴线轴中时的张力在7 n或更大的范围内,15 n或更小。\n\n【0025】\n\n缠绕在线时缠绕的间距优选小于线的外径的两倍,更优选为外径的100%或小于100%。\n\n【0026】\n\n优选地,第一冷却剂在25℃的动态摩擦系数的0.1至0.3的范围内用于稀土合金。\n\n【0027】\n\n树脂优选为酚醛树脂,环氧树脂或聚酰亚胺树脂。\n\n【0028】\n\n在线的行进方向上彼此相邻的磨粒之间的平均距离在磨料的平均粒径的100%至600%的范围内,并且磨料晶粒来自树脂层的表面。突出部分的平均高度优选在10μm至40μm的范围内。\n\n【0029】\n\n优选地,第二冷却剂的粘度高于第一冷却剂的粘度。\n\n【0030】\n\n第一冷却剂和第二冷却剂的温度优选在15℃至35℃的范围内\n\n【0031】\n\n多个辊子中的每一个具有聚合物层,其中形成引导槽,并且引导槽是一对至少一个斜面,其角度在25°或更大且相对于径向方向小于45°的角度辊子。优选地,允许线在一对斜面之间行进。\n\n【0032】\n\n工件可以是R-Fe-B基稀土烧结合金,例如,工件可以是Nd-Fe-B基稀土烧结合金。\n\n【0033】\n\n用于制造本发明的稀土磁体的方法是从稀土合金粉末制备稀土磁体的烧结体的步骤,以及使用任何一个将多个稀土磁体分离出多个稀土磁体的步骤上述切削方法。它的特征在于包括。\n\n【0034】\n\n本发明的线锯装置具有磨料晶粒通过形成在芯线的外周表面上的树脂层固定的电线,以及缠绕在该线上的卷轴线轴和缠绕在卷轴线轴上的卷轴。一种装置驱动多个滚子以驱动和行驶,以及用于将第一冷却剂供应到导线切断的部分的装置,以及缠绕在卷轴梭芯或卷轴筒管附近的钢丝。该线包括用于提供含有二醇的第二冷却剂,其实现上述目的。\n\n【0035】\n\n用于供应第二冷却剂的装置可以被配置为包括喷射装置。\n\n【0036】\n\n通过制造本发明的稀土磁铁的方法制造的稀土磁铁适用于语音线圈电动机。\n\n【0037】\n\n发明内容\n\n在下文中,将描述根据本发明的实施例的切割方法。\n\n【0038】\n\n根据本发明的切割方法使用导线(固定磨料线),其中磨粒(通常是金刚石磨粒)固定到芯线(通常是钢琴线)。缠绕在一对卷轴横桥周围的线在多个辊子之间延伸并在将稀土合金(工作)上沿线行驶时切割。此时,在提供稀土合金是钢丝切割的部分中的稀土合金是水的主要成分的同时进行切割。这里,在卷绕在卷轴上的制备步骤中,通过含有含有二醇的润滑液覆盖导线的表面,在磨料中剥离的树脂通过在外周上形成的树脂层剥离可以抑制核心线的表面。\n\n【0039】\n\n含有二醇的润滑溶液可以优选用于含有50质量%或更多乙二醇储备溶液或二醇的水溶液。例如,作为二醇,可以适当地使用聚氧化烯。由于乙二醇更高的亲水性(水保持)而不是树脂层,因此认为树脂层的作用以防止水的吸湿。另外,优选的是,含有施加到卷绕卷轴缠绕在卷轴梭纹的制备步骤中的二醇的润滑脂被供应到待切割的部分,并且具有比冷却剂更高的润滑性。\n\n【0040】\n\n当卷绕到导线锯装置的卷轴线轴时,优选地进行覆盖含有二醇的润滑剂的线的表面的步骤。作为将二醇(或乙醇水溶液)施加到线表面的方法,可以适当地使用喷涂方法,通过喷涂,滴加方法,涂布方法,浸渍方法等。缠绕到卷轴线轴时的张力优选在7 n或更大的范围内,15 n或更小。当张力低于7n时,可能发生线截留,如果它超过15N,则可能发生导线之间的摩擦引起的损坏。此外,当在该范围内设定张力时,可以获得良好的切削精度,这是优选的。\n\n【0041】\n\n此外,当围绕线缠绕时的间距(线距离)优选小于线的外径的两倍,更优选为外径的100%或小于100%。通过以这种方式调节缠绕时的间距,防止下一线进入卷轴线轴,并防止了下一线,并且抑制了线之间的线偏转和摩擦的发生。\n\n【0042】\n\n如上所述,在线锯装置的制备步骤中,当在卷绕线时覆盖含有含有乙二醇的润滑流体时,将线存储在保持线的状态下以抑制树脂层的劣化电线。可以完成。含有二醇的润滑液的施加不限于制备步骤,例如,可以在第二冷却剂中加入并混合二醇。\n\n【0043】\n\n为了增加导线的寿命,还提供了一种冷却剂(第二冷却流体),其主要部件用于围绕一对卷轴的线或靠近一对卷轴线轴的线是优选的。通过将冷却剂供应到缠绕在卷轴线轴周围的卷绕中,减少了卷轴线轴中的导线的发热和机械摩擦力。结果,由于减小了由电线接收的机械损坏,因此抑制了切割精度和切割效率的降低,并且电线的寿命变长。\n\n【0044】\n\n优选地,第一冷却剂在25℃的动态摩擦系数的0.1至0.3的范围内用于稀土合金。第二冷却剂优选在25℃下具有动态摩擦系数,用于0.3或更小的稀土合金,更优选为0.15或更小。以下实施方案中所示的动态摩擦系数是使用滴定体测试仪使用的R-Fe-B基稀土合金的滴定体获得的值。优选用作R-Fe-B基稀土磁铁的稀土合金的组合物和制造方法描述于例如美国专利No.4,522,517中。No.4,770,723和4,792,368。\n\n【0045】\n\n尽管在25℃下使用动态摩擦系数使用在本发明的切割方法中使用的第一和第二冷却剂,但实际使用的冷却剂的温度不限于25℃。然而,为了获得本发明的效果,温度控制的冷却剂优选在15℃至35℃的范围内,更优选在20℃至30℃的范围内。众所周知,冷却剂的动态摩擦系数取决于温度,因此如果实际使用的冷却剂的温度超出上述温度范围,则冷却剂的动态摩擦系数超出上述数值范围。它与此类似地类似,冷却效率降低。\n\n【0046】\n\n通过使用具有上述动态摩擦系数的冷却剂,可以有效地抑制电线温度的异常上升,从而可以有效地抑制和防止磨料颗粒的异常脱节和断线。。结果,可以降低制造成本,因为可以防止降低加工精度并在比以前长的时间内使用电线。\n\n【0047】\n\n这种效果是常见的第一冷却剂供应第一冷却剂和缠绕在供应到切割部分的卷轴线轴上的卷绕卷绕,并且在一对卷轴线轴附近行驶,从而可以使用第一冷却剂相同的冷却剂作为第二冷却剂。然而,可以从第一冷却剂使用具有粘度的冷却剂可以使用,使得第二冷却剂容易被粘附到围绕卷轴线轴缠绕的线或卷轴线轴的线上。另外,作为第二冷却剂和第一冷却剂,粘度为1MPa·s至50mPa·s(动力学粘度:1mm)2/ s 50mm.2可以适当地使用/ s)的冷却剂。 5MPa·S或更多的粘度增加第二冷却剂线的粘附(5mm2优选使用具有/ s或更高的运动粘度的冷却剂)。可以通过控制与后面描述的水混合的润滑剂的浓度来调节冷却剂的粘度。\n\n【0048】\n\n需要在切割过程的整个周期内提供第二冷却剂,并且如果将足够量的冷却剂施加到缠绕在卷轴线轴周围的导线上,则可以间歇地供应液体的第二冷却。另外,由于含有水的冷却流体(特别是链烷醇胺等)是主要成分,因此它不利地影响树脂而不是油性冷却溶液,因此当使用树脂层使用固定磨料谷物的电线时,它是优选的冷却剂的量很小。因此,优选使用喷涂方法或用于在卷轴线轴缠绕在线或卷轴横线辊附近的导线的导线供应冷却剂。特别地,喷涂方法是优选的,因为少量的冷却剂可以均匀地供应到卷绕卷轴线轴的线上。冷却剂的供应量可以适当地设定为类型,长度,扫描速度等,并且设定为例如50ml / min至500ml / min的范围内。但是,电沉积线(例如,ni\n\n当例如使用分层层固定磨料的含水冷却剂的耐含水冷却剂的电线,例如,可以浸入冷却剂中。\n\n【0049】\n\n通过添加表面活性剂或称为“合成”的合成润滑剂来制备上述冷却剂。通过调整类型和添加量,可以获得预定的动态摩擦系数。另外,当使用主要由水组成的冷却剂时,由于相对粘度低,因此可以使用通过切割产生的污泥的磁体容易地分离稀土合金的切割废物,并且冷却剂再次。可以用过的。此外,可以通过丢弃冷却剂来防止对自然环境的不利影响。另外,可以减少污泥中包含的碳的量,并且可以提高由污泥回收的切割肉汤的磁体的磁性。\n\n【0050】\n\n当电线在高速行驶时携带时,冷却剂可以泡沫并降低冷却效率。通过使用含有消泡剂的冷却溶液,可以抑制由于冷却剂的发泡而抑制冷却效率的降低。此外,可以通过使用冷却剂来抑制稀土合金的腐蚀,其中pH值为8-11。另外,通过使用含有孔校正剂的冷却溶液,可以抑制稀土合金的氧化。可以考虑到稀土合金的类型,切割条件等适当调整这些。\n\n【0051】\n\n作为导线,适当使用其中金刚石的磨料晶粒固定其中。也就是说,使用树脂用树脂固定的导线可以适合于芯线(通常钢琴线)的外周表面。其中,作为树脂,优选使用酚醛树脂,环氧树脂和聚酰亚胺树脂。这些树脂对钢琴线(硬钢丝)的外周表面具有高粘合强度,并且在稍后描述的冷却溶液中也具有优异的润湿性(渗透率)。另外,它比使用电沉积法制造的线便宜,并且可以减少稀土合金的切割成本。另外,电线的芯线不限于钢琴线,并且由高熔点金属形成,例如Ni-Cr和Fe-Ni,例如W或Mo,或者高强度纤维,如尼龙纤维,或诸如尼龙纤维的高强度纤维,其可以由其形成。而且,磨料颗粒的材料不限于金刚石,并且可以是SiC,B,C,CBN(立方硼氮化物)等。\n\n【0052】\n\n为了获得切割小的优点,线的外径优选为0.3mm或更小,更优选为0.25mm或更小。线的外径的下限值被设定为获得足够的强度,并且为了将预定尺寸的磨粒固定,具有足够的强度,约0.12mm至0.20mm的核心。它被使用。从切割效率的观点来看,优选满足磨粒的平均粒径D,特别是,优选满足40μm≤d≤60μm之间的关系。此外,从切割效率和切割废物(污泥)的观点来看,在线行进方向上相邻磨料之间的平均距离在磨粒的平均粒径D的100%至600%的范围内。优选地,磨粒从酚醛树脂层的表面突出的部分的平均高度优选在10μm至40μm的范围内。该电线可以通过指定上述规格从一般电线(例如,亚密材料)的制造商提供。\n\n【0053】\n\n使用这种电线,可以实现良好的切削效率,并且在切割围绕的可放电方面具有优异的,因此可以切割相对高的行驶速度(例如,1000米/分钟)。此外,由于冷却溶液有效地冷却,因此可以以良好的加工精度长时间稳定地切割稀土合金。当使用主要由水组成的冷却剂时,通过将行驶速度设定为约20至30%(例如,1100m / min至1200米/分钟)来设定切割效率而不是使用油性冷却剂的情况。它可以优化。\n\n【0054】\n\n主要污染用于本发明的切割方法的水的冷却溶液是粘度(运动粘度约为1mm2/ s),切割围绕的可放电是油基冷却剂(通常为5mm2它低于/ s或更多)。因此,为了增加切割乳房的可放电,在切割步骤中,切割部分保持在浸入容纳在罐中的冷却剂中的状态,并且冷却剂从罐的底部供应到罐中。通过从罐的开口供应,优选地保持在从罐的开口溢出的状态。\n\n【0055】\n\n将碎片放入低粘度冷却剂中易于沉降,切割储存靠近罐的漂浮废物是轻微的。为了使切割部分浸入冷却剂中的状态,线材设置成在罐开口的靠近的冷却剂中行进,因此电线在具有小切割乳房的冷却液中行进。冷却液。冷却剂将小切割部分供应到切割部分。特别地,通过从罐的开口供应冷却剂,通过从开口保持冷却溶液,可以减小供应到切割部分的冷却剂中的切割废物量。此外,通过机械地冲洗附着在线的切割肉汤,也可以获得从罐的开口供应的冷却剂的流动。溢出1分钟的冷却剂的量优选为罐体积的50%以上。此外,从开口供应的冷却剂的量优选大于从罐的底部供应的冷却剂的量大。\n\n【0056】\n\n此外,在罐的开口上形成帘式冷却液体流量(或空气流),并且通过抑制来自罐的开口的冷却剂来溢出冷却剂的液体表面来自罐的壁墙壁。如果较高的冷却剂围绕切割单元供应,则可以进一步降低冷却剂中的切割废料量。这里,在箱的开口的侧面形成冷却液体流,与线的行进方向交叉以形成冷却液体流动。用于形成冷却液流的排出压力为0.2MPa(2kg / cm)2)〜1.0 mpa(10 kg / cm2优选在范围内),0.4MPa(4kg / cm2)〜0.6 mpa(6 kg / cm2更优选地,它在范围内。如果放电压力低于该范围,则可能无法获得足够的效果,并且如果它高于该范围,则可以偏转线,并且可以减小处理精度。\n\n【0057】\n\n此外,在提供导线的主辊中,优选将冷却剂排出到设置在罐的两侧的一对主辊中以限制线的行进位置。通过将冷却剂排出到这些主辊上,需要抑制设置有用于引导线的凹槽的有机聚合物层(例如,氨基甲酸酯橡胶层)的温度升高,该凹槽设置在主辊的表面上,通过将连接到线或引导槽附接的线或引导废料(或污泥),可以防止线行进位置或防止导线从凹槽中脱离。\n\n【0058】\n\n另外,由含有稀土合金的切割废料和在切割过程中产生的冷却剂的污泥组成的脏溶液,以及使用磁铁从污泥收集冷却液体。可以重复使用(例如,循环使用)。如上所述,由于主要由水组成的冷却剂具有低粘度,因此可以容易地分离切割废物。另外,通过分离稀土合金的切割液,冷却剂的废液处理可以容易而不损坏环境。此外,切割废物也可用作稀土合金的原料。由于用于本发明的切割方法的冷却剂主要由水组成,因此易于降低稀土合金中所含的碳量,从切割废物中再生,因此使用的原料用作稀有的材料使用地球磁铁。可获得的。分离切割围绕污泥的方法可以使用,例如,日本应用于日本专利申请No.2000-224481中的方法。\n\n【0059】\n\n如上所述,适当地应用根据本发明的切割方法以切割稀土烧结合金,特别是R-Fe-B射线​​烧结合金。根据本发明的切割方法切割\n\n通过磁化稀土合金可以获得稀土磁铁。可以在切割过程之前或可以执行磁化过程。使用稀土烧结磁铁制造的基于R-Fe-B的稀土烧结合金适当用作用于定位磁头的语音线圈电机的材料。根据本发明的切割方法由美国专利No.4,522,587中公开的基于R-Fe-B的稀土烧结磁体(合金)特别断开。美国专利No.4,770,723和美国专利No.美国专利号4,792,368。它适合使用。此外,其中,主要构成了钕(Nd),铁(Fe)和硼(B),并且是四方结构的Nd2Fe.14B.一种稀土烧结磁体(合金)(下文中称为“钕磁体(合金)”(以下称为钕磁体(合金)(下文中称为具有硬母相的新摩尔(合金) (富含铁相)由B-金属化合物和晶界相组成,具有Nd粘稠的粘性。它适当地应用于切割和制造。作为钕磁铁的代表性示例,有一个Sumitomo特殊金属有限公司和产品名称新金属有限公司。\n\n【0060】\n\n通过采用根据本发明的切割方法,由于稀土合金可以高度且有效地切割,例如,用于用于定位磁头的音箱电机的小稀土磁体(例如,0.5mm至3.0mm厚度可以高精度和有效地制造。\n\n【0061】\n\n在本发明的上述实施例中,相对于滚轮的径向,形成在用于行进线的辊的聚合物层中的引导槽是至少25°或更大且小于45°。通过采用配置具有一对斜率,由电线引起的电线在一对斜面之间行进,可以抑制在使用作为主要部件时的水时产生的导线的切割。当然,优选的是,一对斜率相对于辊的径向形成25°或更大且小于45°的角度。特别地,允许在辊子之间行进的线的张力优选为25 n或更大,35 n或更小。辊的表面是平行于辊的轴向的平面。\n\n【0062】\n\n(实施例)\n\n在下文中,将参考附图更具体地描述根据本发明的切割方法的实施例。在本实施例中,将描述切割用于制造上述钕磁体的钕磁体烧结体的方法。\n\n【0063】\n\n简要描述制备钕(ND-Fe-B)烧结磁体的方法。另外,例如,在美国专利No.5,522,517中详细公开了一种制备稀土合金作为磁体材料的方法。\n\n【0064】\n\n首先,在将原料金属精确称量到预定的组分比之后,将原料金属溶解在真空或氩气气氛中的高频熔炉中。将溶解的原料金属浇铸到水冷模中,形成预定组合物的原料合金。将原料合金粉碎,产生粒径为约3至4μm的细粉末。将该细粉末置于模具中并压制在磁场中。此时,在压制后,在必要后,将细粉末与润滑剂混合。接下来,可以进行约1000℃至约1200℃的烧结步骤以产生钕磁体烧结体。此后,进行约600℃的老化处理以改善磁体的矫顽力,并且完成稀土磁体烧结体的产生。烧结体的尺寸例如为30mm×50mm×50mm。\n\n【0065】\n\n将所得烧结体切割并形成从烧结体切割的多个薄板(有时称为基板或晶片)。通过抛光的晶体抛光处理在所获得的烧结体的每个薄板上进行,并且调节尺寸和形状,然后进行表面处理以提高长期可靠性。此后,在进行磁化过程之后,通过检查过程完成钕永磁体。可以在切割步骤之前进行磁化过程。\n\n【0066】\n\n接下来,将参考图1和图2描述根据本发明的切割方法。1至4。\n\n【0067】\n\n图。图1是示出适用于根据本发明的切割方法的线锯装置100的示意性框图。\n\n【0068】\n\n线锯装置100具有三个主辊10a,10b和10c,以及一对卷轴线轴40a和40b。设置在用于容纳冷却剂的罐30的下部的主辊10a是驱动辊,并且设置在罐30的两侧上的主辊10b和10c是从动辊。在行驶往复运动的同时,导线20缠绕在例如从一个卷轴滚筒40a到另一个卷轴线轴40b。此时,可以通过使卷轴滚筒40a的40a的卷绕时间长于另一卷轴线轴40b的卷绕时间来将新的线材20供应到卷轴筒管40a侧。。。导线20的行驶速度例如在200m / min至1500米/分钟的范围内,并且供应新线的速率例如在0 m / min至5米的范围内/ min。\n\n【0069】\n\n在主辊10a,10b和10c之间,线20设置在例如150柱。为了确定导线20的行驶位置,有机聚合物层具有用于引导电线20(例如,氨基甲酸酯深度)的凹槽(例如,大约0.6mm深,未示出)的有机聚合物层提供辊10A,10B和10C橡胶层。线20的柱之间的间隔由该引导槽的间距确定。根据待从工件切割的板的厚度,将引导槽的间距设定。\n\n【0070】\n\n在卷轴桥梁40A和40B附近,分别设置用于调节绕组位置的特拉索42A和42B。在从卷轴滚筒40a和40b到主辊10a的路径中,在每一侧设置五个导辊44和一个张力辊46,并且导向线20,并且调节张力。导线20的张力可以根据各种条件(切割长度,切割速度,行进速度等)适当地改变,但是被设定为例如20n至40 n的范围内。\n\n【0071】\n\n缠绕在卷轴线轴40a和40b周围的线20接收的损坏彼此相比取决于导线20的张力。因此,优选提供一种用于减少卷绕卷轴40a和40b的张力的机构。作为减少绕组张力的机制,例如,可以使用JP-A-9-29607,JP-A-9-314548,JP-A-10-166353和JP-A-10-277914机制。卷轴横向板40a和40b中的绕组张力优选在7 n或更大的范围内,15 n或更小。\n\n【0072】\n\n电线锯装置100还包括喷射装置80a和80b,用于将冷却剂供应到缠绕在卷轴横向板40a和40b周围的线20。在本实施例中,由于使用磨料晶粒与树脂固定的导线20,因此采用喷射方法为有效地将少量冷却剂赋予电线20。\n\n【0073】\n\n喷射装置80a和80b供应,例如,通过提供冷却剂(例如,200ml / min)和空气(例如,0.4MPa)和喷嘴,如图2所示。2,供应到冷却剂60稍后描述的切割部分与后面描述的冷却剂相同。可以将冷却剂喷涂在缠绕在卷轴线轴40a,40b(例如,芯外径170mm,高度340mm)上的整个导线20上喷射。这里,作为冷却剂,存储在后面描述的冷却剂罐60中的冷却剂共同使用,并且分别分别泵送喷射装置80a和80b。当然,喷雾装置80a和\n\n可以单独提供冷却剂罐以将冷却剂供应到80B,并且可以使用与供应到切割部分的冷却剂不同的冷却溶液。\n\n【0074】\n\n此外,喷射冷却剂的区域可以限制,以减小对电线20的损坏和/或冷却剂使用的冷却剂的量。与图6中所示的遍历42a和42b的移动同步。如图1所示,执行绕组(和递送)操作,并且它可以用作选择性地将冷却剂提供给电线20之间摩擦的区域的机构。生成。。特别地,当如图所示的线20往复运动时,缠绕在卷轴线轴40a和40b周围的线20至少在该区域中的至少冷却剂产生,因为当时缠绕在卷轴线轴40a和40b周围的线20旅行方向的反转。首选。\n\n【0075】\n\n供应冷却剂的装置不限于所示的喷雾装置80a和80b,并且可以使用滴装装置等。当供应相对大量的冷却剂时,如果需要,优选提供恢复面包,用于在卷轴横硼40a和40b的下部回收和重复使用过量的冷却剂。优选的是在冷却剂的回收路径中提供滤光器和/或磁体分离器,并分开除去包含在回收的冷却剂中的芯片。\n\n【0076】\n\n在本实施例中,示出了将冷却剂喷射到缠绕在卷轴桥梁40a和40b周围的导线20的配置,但是可以提供卷轴线轴40a和40b的导线(或在递送之后递送)冷却剂到20。如果彼此接触的至少一个导线是湿的,则可以减少对磨粒的损坏。此外,通过将冷却剂在从卷轴线轴40a和40b递送之后立即将冷却剂供应到线20,导线20接触引导辊44,张紧辊46,主辊10a,10b和10c引导槽。它也是可能的减少造成的伤害。\n\n【0077】\n\n如上所述制造的烧结工人工作50设置在线锯装置100下面。\n\n【0078】\n\n多个工件50例如由环氧树脂或热熔熔融基粘合剂(未示出)内插,并用铁基板52组装为多个块,铁工板54固定到。\n\n块板54,工件50的每个块50和碳基板52也通过粘合剂(未示出)彼此固定。碳基板52作为虚设结束,使得在完成工板54的断开处理之后通过线20切割工作板54,并且保护工作板54受到保护。\n\n【0079】\n\n在本实施例中,每个块的尺寸设计成使得沿线20的行进方向测量的每个块的尺寸约为100mm。因此,这里,线20的切削长度约为200mm。在本实施例中,如上所述,工作50被分成多个块,但是导线20的尺寸应设置为冷却剂或驱动冷却剂的尺寸。它也根据速度而改变。此外,根据每个工作50的尺寸也改变了作品50的尺寸和布置以及构成一个块的作品50的布置。考虑到这些,工作50可以适当地布置在最佳尺寸块中。\n\n【0080】\n\n如上所述的工作50通过设置有电动机58的提升装置来降低,该提升装置压靠在行进线20上并切割。工作50的降低速度可以根据各种条件而变化,而是例如在20mm / hr到50mm / hr的范围内。\n\n【0081】\n\n存储在冷却剂罐60中的冷却剂通过管63通过排出泵62泵送。管63沿着方式分支到下管64和上管66中。下管64和上管66设置有阀门63b和63a,用于将冷却剂的流量调节到每个。下管64连接到设置在罐30的底部的下喷嘴64a,用于浸入切割部分。上管66连接到上喷嘴66a,66b和66c,用于从罐30的开口供应冷却剂,并且上喷嘴66d和66e分别设置成冷却主辊10b和10c。\n\n【0082】\n\n从上喷嘴66a,66b和66c和下喷嘴64a提供冷却剂,并且在至少切割过程中,如图2中的箭头f所示。如图1所示,通过空气供应打开冷却液。它是维持的从部分溢出。从罐30溢出的冷却剂通过设置在罐30下方并积累的回收面包70被引导到回收罐72。回收的冷却剂经由循环泵76经由循环泵74送到冷却剂罐60。过滤器78设置在循环管76的中间,并且分离并除去回收的冷却剂中的切割废物。回收方法不限于此,并且可以提供一种机构以使用磁力分离切割废物(参见例如日本专利申请No.2000-224481)。\n\n【0083】\n\n接下来,参考图1.参照图3,将更详细地描述根据本发明的切割过程。\n\n【0084】\n\n罐30在与线20的行进方向交叉的侧壁的开口附近具有辅助壁32。辅助壁32由塑料板(例如,丙烯酸板)形成,并且在没有图2中的虚线中的负载时,设置在线的行进位置。当工作50降低以断开并接触线20时,导线20被静置,并且如图2中的实线所示。如图3所示,切割部分浸入罐30中的冷却溶液中。此时,当导线20导通时,导线20切割辅助壁32并形成狭缝。当通过线20的切割处于稳定状态时,偏转量是恒定的,并且导线20在穿过形成在辅助壁32中的狭缝的同时切割工作50。因此,在辅助壁32上形成的狭缝用于调节线20的行进位置,并且还有助于加工精度的稳定性。\n\n【0085】\n\n罐30具有例如约35μl(升),并且在切割过程中,冷却液从下喷嘴64a提供至约30l / min,上喷嘴66a,66b和66c供应从66℃到约90升,冷却剂以/ min的流速供应,并且总是从开口保持冷却剂。仅给予电线20的冷却剂,如图2所示。如图3所示,由于导线20在切割过程中产生,因此不需要溢出冷却剂,而是溢出的钕磁体烧结体。当切割时,它是优选的采用上述配置以改善切割乳房的可放电。\n\n【0086】\n\n为了提高切割乳房的可放电,减少切割部分附近的冷却剂中所含的切割废料量是有效的。为了获得足够的可放电,溢出1分钟的冷却剂的量优选为罐体积的50%以上。此外,优选的是,新的冷却剂从开口供应更多地超过罐30的底部。由于使用具有低粘度的冷却溶液作为主要成分,因此容易沉淀排出冷却剂进入冷却剂的切割废物,因此当许多冷却剂从罐30的底部供应时,沉淀的切割废物是不可取的,因为它导致漂浮在切割部分附近。\n\n【0087】\n\n另外,从开口供应到导线20的新鲜冷却剂的百分比(即切割槽)占用\n\n为了制造许多,优选地增加从行进线20上方提供的冷却剂。也就是说,通过从罐30的开口供应冷却剂,可以通过将冷却液从开口保持冷却液来减小供应到切割部分的冷却剂中所含的切割废物量。此外,从罐30的开口供应的冷却剂的流动也可以通过机械地冲洗连接到线20的切割肉汤来获得。\n\n【0088】\n\n此外,由于由线20形成的狭缝以外的部分用作罐30的侧壁,所以上述辅助壁32用于保持冷却剂的液体表面S高。此外,使用喷嘴66b和66c形成帘式冷却液流,以与罐30的开口的线20的行进方向相交,并且冷却剂从罐30的开口溢出。抑制。结果,如果冷却剂的溢流液体S高于罐30的辅助壁32,则围绕切割部分供应更多的冷却剂,因此冷却剂中的切割肉汤的量。可以进一步降低。用于形成冷却液流的排出压力为0.2MPa(2kg / cm)2)〜1.0 mpa(10 kg / cm2优选在范围内),0.4MPa(4kg / cm2)〜0.6 mpa(6 kg / cm2更优选地,它在范围内。如果放电压力低于该范围,则可能无法获得足够的效果,并且如果它高于该范围,则可以将线20带到导线20,结果可以减小处理精度。\n\n【0089】\n\n此外,优选地将冷却剂排出到一对主辊10b和10c上,该对主辊10b和10c设置在罐30的两侧并调节线20的行进位置。通过将冷却剂排出到这些主辊10b和10c,有机聚合物层(例如,氨基甲酸酯橡胶层),该凹槽具有用于引导设置在主辊10b和10c的表面上的线20的凹槽,因为温度升高可以是抑制和线20或引导桁架(或污泥)可以在线20或引导槽中移除,导线20的行进位置换档或导线20防止电线20从凹槽中脱离。它也可以通过改善排放来获得。\n\n【0090】\n\n当加入含有水的冷却剂作为主要成分的冷却剂时,作为阴离子系统,脂肪酸衍生物如脂肪酸皂或环烷酸皂,或硫酸盐酯,例如长链酒精硫酸盐的硫酸化油植物油。磺酸型,非离子系统,如石油磺酸盐,聚氧乙烯烷基苯基醚和聚氧乙烯单脂肪酸酯,多元醇或山梨糖醇一水合物,或烷基胺体系如脂肪酸二乙醇酰胺可以是用过的。具体地,通过加入2重量%的化学溶液JP-0497N(Castrol Co.,Ltd。制造)将动态摩擦系数可以在预定范围内调节。\n\n【0091】\n\n另外,作为合成型合成润滑剂,可以使用合成溶液型,合成乳液型和合成溶解型,其中,优选合成溶液类型,具体地,乙二醇和链烷醇胺等。含有润滑剂的润滑剂(Lucido Chemical可以提到工业有限公司)和Sygtail 9954(由Castrol Co.,Ltd.制造)。两者都可以通过加入2%至10%重量的水来调节在合适的范围内。\n\n【0092】\n\n此外,通过含有抗生锈剂可以防止稀土合金的腐蚀。特别地,当切割R-Fe-B基稀土合金时,优选将pH设定为8至11。作为有机系统,有机系统是羧酸盐,例如油酸盐或苯甲酸盐,或胺如三乙醇胺,无机型,磷酸盐,硼酸盐,钼酸盐,碳酸盐。或者,可以使用碳酸盐。\n\n【0093】\n\n此外,作为有色金属防腐剂,诸如苯子三唑的氮化合物可以用作防腐剂,并且可以使用甲醛供体如六氢噻嗪作为防腐剂。\n\n【0094】\n\n硅氧烷乳液也可用作消泡剂。通过含有消泡剂,降低冷却剂的鼓泡,改善了冷却剂的渗透性,并且降低了冷却效果,防止了导线20中的温度升高,并且导线20的温度异常并异常异常磨损。难以发生。\n\n【0095】\n\n将参考图4描述适合于本实施例的电线20的结构。在该图中,从由线20的虚线的虚线指示的中心线简化了下半部分。\n\n【0096】\n\n作为导线20,优选使用其中金刚石磨料颗粒24固定到芯线(钢琴线)22的外周表面的电线20。其中,优选使用酚醛树脂,环氧树脂或聚酰亚胺树脂作为树脂。这些树脂对钢琴线(硬钢丝)22的外周表面具有高的粘附强度,并且在润湿性(渗透率)上也具有高的润湿性,以至于上述冷却剂。此外,可以使用磨粒,SiC等以及金刚石磨粒。\n\n【0097】\n\n作为合适的线20的具体实例,通过酚醛树脂层26在直径为约0.18mm的钢琴线22的外周上固定平均粒径为约45μm的金刚石磨料。直径约为0.24毫米。提及电线20。此外,从切割效率的放电效率和切割制动器(污泥)的观点来看,相邻磨粒24在线20的方向(沿图中的虚线平行于虚线)之间的平均距离优选的是磨料晶粒的平均粒径D的100%至600%的范围内。此外,磨粒22从酚醛树脂层26的表面突出的部分的平均高度在10μm至40μm的范围内。这种线20形成有磨料颗粒22之间的合适尺寸的空间(有时称为“芯片袋”),因此在具有良好的切削效率和它具有良好排放的同时。\n\n【0098】\n\n上述线锯装置100用于验证使用由满足上述规格的合金材料制成的电线切割上述钕磁体合金的效果。作为冷却剂,将约10%的尤维洛化学水溶液(液体温度23℃)(液体温度23℃)喷洒,以供应量为200ml / min,张力30n,40mm /小时,新的在线供电量2米/分钟的条件下,在两个方向上切割线。结果,与冷却剂未被喷射到卷轴横向板40a和40b(线长38km)的情况相比,磨粒和树脂层的解吸量减少到约三分之一。动态系数为0.11至0.13,表面张力33至36mN / m,粘度1至4MPa·s通过调节酰胺化学#830的浓度而获得的(运动粘度1至4mm)。2使用/ s)冷却剂获得相同的结果。\n\n【0099】\n\n另外,证实通过在喷涂冷却剂之前通过用乙二醇涂覆线的表面来抑制树脂剥离。电线表面上的乙二醇涂层如下进行。\n\n【0100】\n\n当导线(线径)缠绕在卷轴线轴周围时,用作焊接的布料用作钢酸丝的线,同时将绕组张力缠绕为约10n,绕组间距约0.46mm。将表面涂覆有二醇(例如,聚氧化烯的储备溶液)。\n\n【0101】\n\n通过使用乙二醇涂层线,当使用不使用乙二醇涂层的丝时,树脂剥离的发生率为约20%(382/1900),约2%\n\n(3/237)可以减少。除新线供电量为3米/分钟之外的条件与上述相同。另外,通过用含有丙醇的润滑剂涂覆表面,降低树脂剥离发生率的变化的效果,该储存环境是储存环境的一段时间。这里,如下进行树脂剥离的评价。在上述条件下切割钕磁体合金5小时后,在用于切割的电线(约900μm)中产生5mm或更大的树脂剥离,并剥离树脂。\n\n【0102】\n\n由于乙二醇是非常亲水的(保水),因此认为树脂层用来防止空气中包含的水。为了有效发挥这种二醇的这种效果,乙二醇直接施加到线的表面上,但可以用水稀释。在这种情况下,还优选使用将二醇浓度施加为含有二醇浓度为50质量%以上的水溶液的方法。\n\n这里,由于使用水溶液作为冷却剂,所以使用水基冷却剂,因此当冷却剂混合时,不会对冷却剂的作用产生不利影响。因为乙二醇在水中的溶解度优异并且在润滑性中优异,与水性冷却剂的混合不会受到不利影响。\n\n【0103】\n\n这里,尽管用含有含有丙醇的润滑剂的表面涂覆有表面的线,但在将冷却剂喷射到卷轴线轴的同时进行切割工艺,但是即使省略该过程,也可以将冷却剂喷射到卷轴线轴中。可以获得预先应用乙二醇抑制树脂剥离的效果。当然,如图所示,最喜欢组合使用。\n\n【0104】\n\n接下来,将描述第一实施例的线锯装置100的主辊10a,10b和10c的优选结构。\n\n【0105】\n\n当使用主要由水组成的冷却剂时,绕线速率增加(即在较短的时间内破坏),加工精度降低,加工精度降低。。作为本发明人的各种考虑因素,如图2所示。如图5所示,形成在辊10a,10b和10c的聚合物层10p中的引导槽10g的横截面形状是一对斜坡为10通过采用电线20的构造来通过采用相对于辊10a的径向10r(下文称为“倾斜角度(以下称为”倾斜角度(α )“)被抑制发现可以获得足够的处理精度。进一步优选的是,倾斜角度为30°或更大,35°或更小。\n\n【0106】\n\n如图所示,优选的是,引导槽10g的一对倾斜10s都相对于辊10a的径向10r具有上述范围的倾斜角,但是一对斜坡10s中的至少一个。如果提供上述范围的倾斜角度,可以获得抑制断开的发生的效果,并且可以获得足够的处理精度。\n\n【0107】\n\n通常,例如,如图6所示,采用其中引导槽10g的斜面10s的结构相对于辊的径向10R具有45°或更大的倾斜角度的结构。这是因为污泥从引导槽10g有效地排出,特别是,稀土合金是高度切削的,因为主阶段和程度缺陷破坏具有晶界相。因为具体的污泥很差重力大,污泥放电差差,使得倾斜角度大于45°,以提高污泥的排水性。\n\n【0108】\n\n然而,由于检查发明人的结果,当斜率10s的倾斜角度大于45°时,断开发生率不会降低,并且发现处理精度降低存在问题。在下文中,将参考图4描述这种现象。\n\n【0109】\n\n图。图7是示出辊子的引导槽的斜面10s的倾斜角与电线的扭转角度之间的关系的曲线图。扭转角ω表示导线20与从辊接收的扭转力成比例,并且当扭转角ω= 360°时,线扭曲一次。结果如下所示的结果。根据下面描述的配置的机械模型计算确定了图7的确定。斜面10s的倾斜角度等于两侧的斜坡。结果显示。\n\n【0110】\n\n当一对辊子(图1中的辊10b和10d)以450mm的间隔(跨度)布置时,导线20以张力30 n(3kgf)设置。新的线路供电量为2米/分钟,在120秒周期中往复运动。此时,在驱动约190次之后,导线20将从辊子被逃脱。\n\n【0111】\n\n这里,由于各种实验,当接收到1跨度(450mm)之间的电线5次(ω= 1800°)时,导线20在线20行进时扭曲约500次。即,大约200×5倍= 1000次,约50%累积为实际扭曲。因此,图2中的垂直轴的扭转角ω.图7表示通过与从机械模型计算获得的扭曲角度乘以0.5来获得的值。另外,当距离静态扭曲断裂强度试验中实际累积的扭转角为1800°(五次)时,用10%的概率估计电线。\n\n【0112】\n\n从图1中可以看出。如图7所示,随着凹槽10g的倾斜角α增加,扭力(扭转角)单调地减小。只要思考仅扭转电线20,如果线20薄(直径d = 0.19mm),则倾斜角度为10°或更大,并且如果它厚(直径为0.25mm),则倾斜角度是25°或更大(直径为0.25mm)。如果是,可以抑制线20的破损。\n\n【0113】\n\n然而,根据实验,当使用任何导线20时,当倾斜角达到45°或更大时,入射率的进入率不会降低。另外,当倾斜角度为45°或更大时,存在处理精度降低的问题。\n\n【0114】\n\n这增加了倾斜角,并且引导槽10g的10 w(参见图5)的宽度变大,并且导线20在10g引导槽中摇动,并且为了飞到相邻的引导槽中如图10G所示,认为线20是不均匀的,并且导线20是不均匀的,并且导线20由于本地出现大应力而断开。另外,认为,由于导线20不稳定地在引导槽10G中行驶的导线20的结果,降低了处理精度。在实验中,使用氨基甲酸酯橡胶层作为聚合物层10p,用yusilo化学工业有限公司制造的约10%水溶液的水溶液用作冷却剂。另外,切割与实施方案1中相同稀土烧结磁铁的工件。\n\n【0115】\n\n根据上述结果,引导槽10g的斜面10s的倾斜角度优选小于25°或更大且小于45°。为了尽可能地抑制电线20,倾斜角优选为30°或更大,使得条件降低,并且为了获得高处理精度,倾斜角度设定为35°或更小。它是优选。此外,优选的是,引导槽10g的底部10b处理略小于线20的半径的曲率半径。\n\n【0116】\n\n这里,尽管已经描述了导线20的张力时的张力,但是当线张力为20 n或更大时,可以获得几乎相同的结果。\n\n【0117】\n\n虽然已经参考线锯装置100和200描述了本发明的实施例,但是本发明不限于此,并且使用单个卷轴线轴的无尽型导线锯装置(例如,jp- A-11-198018)可以应用于。\n\n【0118】\n\n如上所述,根据本发明的一个实施例,使用主要由电线锯装置中的水的冷却剂切割稀土合金,可以增加导线的寿命。由于稀土合金具有导致脆性破坏和导致延展性裂缝的晶界相的硬主相,因此特别难以使用线锯切割,因此本发明的效果特别显着。当采用根据本发明的实施例的切割方法时,稀土合金不受限制,并且使用诸如硅,蓝宝石,石英,玻璃,钕和铁氧体的硬质和纤维材料的循环用作主要水的成分。即使在切割时,电线的寿命也可以延长。\n\n【0119】\n\n【发明效果】\n\n如上所述,根据本发明,可以在用主要由水组成的冷却剂用丝锯装置切割时增加导线的寿命。\n\n【0120】\n\n使用本发明的切割方法,可以使用主要由水组成的冷却剂来切割稀土合金和其他硬质和脆性材料。因此,由于改善了材料的产率,因此使用了含水的冷却剂,可以简化环境友好和截止的清洁过程,进一步加工废液。也可以降低成本。\n\n【0121】\n\n当切割稀土合金时,本发明的切割方法具有显着的效果,所述稀土合金比诸如硅的硬质和脆性材料不太切割。由于稀土合金的材料是昂贵的,因此通过提高材料的产率,成本优点很大。另外,由于切割废物可以与废液分离,因此可以容易地实现冷却剂的冷却使用,因此可以降低环境友好的成本并降低废液的成本。因此,稀土合金的加工成本降低,并且可以以低价格制造用于磁头的音圈电动机。\n\n[简要描述;简介]\n\n【图1】图2是表示适合于通过本发明执行实施方式的切割方法的线锯装置100的示意图。\n\n【图2】图3是示意性地示出了用于将冷却剂供应到卷绕在线锯装置100中的卷轴横向板40a和40b的导线20的结构的图。\n\n图3.图3是表示图1所示的线锯装置100的切割部分附近的结构的示意图。\n\n图4.图3是示意性地示出了根据本发明的适当用于执行实施方式的切割方法的线20的横截面结构。\n\n图5.图3是示意性地示出了辊的横截面结构,其适合用于线锯装置100和200。\n\n6.图3是示意性地示出了传统辊的横截面结构的图。\n\n图7.图3是表示辊子引导槽的斜面10s的倾斜角倾斜角之间的关系的曲线图。\n\n[标志的说明]\n\n10A,10B,10C主洛杉矶\n\n20根电线\n\n30坦克\n\n40a,40b卷轴筒管\n\n42a,42b traversa\n\n50个工作\n\n60个冷却罐\n\n70恢复面包\n\n80A,80B喷雾设备');
INSERT INTO `os_patent_instruction_text` VALUES (12956, 22785, '【0001】\n\n【発明の属する技術分野】\n\n本発明は、希土類合金の造粒粉の製造方法、希土類合金の造粒粉の製造装置および希土類合金焼結体の製造方法に関する。\n\n【0002】\n\n【従来の技術】\n\n希土類合金の焼結磁石(永久磁石)は、一般に、希土類合金の粉末をプレス成形し、得られた粉末の成形体を焼結し、時効処理することによって製造される。現在、希土類·コバルト系磁石と、希土類·鉄·ボロン系磁石の二種類が各分野で広く用いられている。なかでも、希土類·鉄·ボロン系磁石(以下、「R-Fe-B系磁石」と称する。RはYを含む希土類元素、Feは鉄、Bはボロンである。)は、種々の磁石の中で最も高い最大磁気エネルギー積を示し、価格も比較的安いため、各種電子機器へ積極的に採用されている。\n\n【0003】\n\nR-Fe-B系焼結磁石は、主にR2Fe14Bの正方晶化合物からなる主相、Nd等からなるRリッチ相、およびBリッチ相から構成されている。なお、Feの一部がCoやNiなどの遷移金属と置換されてもよく、ボロン(B)の一部が炭素(C)で置換されてもよい。本発明が好適に適用されるR-Fe-B系焼結磁石は、例えば、特許文献1および特許文献2に記載されている。\n\n【0004】\n\nこのような磁石となるR-Fe-B系合金を作製するために、従来は、インゴット鋳造法が用いられてきた。一般的なインゴット鋳造法によると、出発原料である希土類金属、電解鉄およびフェロボロン合金を高周波溶解し、得られた溶湯を鋳型内で比較的ゆっくりと冷却することによって合金インゴットが作製される。\n\n【0005】\n\n近年、合金の溶湯を単ロール、双ロール、回転ディスク、または回転円筒鋳型の内面などと接触させることによって、比較的速く冷却し、合金溶湯から、インゴットよりも薄い凝固合金(「合金フレーク」と称することにする。)を作製するストリップキャスト法や遠心鋳造法に代表される急冷法が注目されている。このような急冷法によって作製された合金片の厚さは、一般に、約0.03mm以上約10mm以下の範囲にある。急冷法によると、合金溶湯は冷却ロールに接触した面(ロール接触面)から凝固し始め、ロール接触面から厚さ方向に結晶が柱状に成長してゆく。その結果、ストリップキャスト法などによって作製された急冷合金は、短軸方向のサイズが約0.1μm以上約100μm以下で、長軸方向のサイズが約5μm以上約500μm以下のR2Fe14B結晶相と、R2Fe14B結晶相の粒界に分散して存在するRリッチ相とを含有する組織を持つにいたる。Rリッチ相は希土類元素Rの濃度が比較的高い非磁性相であり、その厚さ(粒界の幅に相当する)は約10μm以下になる。\n\n【0006】\n\n急冷合金は、従来のインゴット鋳造法(金型鋳造法)によって作製された合金(インゴット合金)に比較して相対的に短い時間(冷却速度:102℃/秒以上、104℃/秒以下)で冷却されているため、組織が微細化され、結晶粒径が小さいという特徴を有している。\n\nまた、粒界の面積が広く、Rリッチ相は粒界内に広く広がっているため、Rリッチ相の分散性にも優れるという利点がある。これらの特徴が故に、急冷合金を用いることによって、優れた磁気特性を有する磁石を製造することができる。\n\n【0007】\n\nまた、Ca還元法(あるいは還元拡散法)と呼ばれる方法も知られている。この方法は以下の工程を含む。まず、希土類酸化物のうちの少なくとも1種と、鉄粉および純ボロン粉と、フェロボロン粉およびホウ素酸化物のうちの少なくとも1種とを所定の割合で含む混合粉、あるいは上記構成元素の合金粉または混合酸化物を所定の割合で含む混合粉に、金属カルシウム(Ca)および塩化カルシウム(CaCl)を混合し、不活性ガス雰囲気下で還元拡散処理を施す。得られた反応生成物をスラリー化し、これを水処理することによって、R-Fe-B系合金の固体が得られる。\n\n【0008】\n\nなお、本明細書において、固体合金の塊を「合金塊」と呼び、従来のインゴット鋳造法によって得られる合金インゴットおよびストリップキャスト法などの急冷法によって得られる合金フレークなどの溶湯を冷却して得られた凝固合金だけでなく、Ca還元法によって得られる固体合金など、種々の形態の固体合金を含むものとする。\n\n【0009】\n\nプレス成形に供される合金粉末は、これらの合金塊を、例えば水素吸蔵法および/または種々の機械的粉砕法(例えば、ディスクミルが用いられる)で粉砕し、得られた粗粉末(例えば、平均粒径10μm〜500μm)を例えばジェットミルを用いた乾式粉砕法で微粉砕することによって得られる。\n\n【0010】\n\nプレス成形に供せられるR-Fe-B系合金粉末の平均粒径は、磁気特性の観点から、1.5μm〜6μmの範囲内にあることが好ましい。なお、粉末の「平均粒径」は、特にことわらない限り、ここでは、FSSS粒径を指すことにする。しかしながら、このように平均粒径が小さな粉末を用いると流動性やプレス成形性(キャビティ充填性および圧縮性を含む)が悪く、生産性が悪い。\n\n【0011】\n\nこの問題を解決する方法として、合金粉末粒子の表面を潤滑剤で覆うことが検討されている。例えば、特許文献3および特許文献4には、平均粒径10μm〜500μmのR-Fe-B系合金の粗粉末に、少なくとも1種の脂肪酸エステルを液状化した潤滑剤を、0.02質量%〜5.0質量%添加混合後、不活性ガスを用いたジェットミル粉砕を行い、R-Fe-B系合金の微粉末(例えば平均粒径1.5μm〜5μm)を作製する技術が開示されている。\n\n【0012】\n\n潤滑剤は、粉末の流動性や成形性(圧縮性)を改善するとともに、成形体に固さ(強度)を付与するためのバインダとして機能する一方、焼結体中に残存炭素として残留し磁気特性を低下させる原因となるので、優れた脱バインダ性が要求される。例えば、特許文献5には、脱バインダ性に優れた潤滑剤として、解重合ポリマ、解重合ポリマと炭化水素系溶剤の混合物、および解重合ポリマと低粘度鉱油と炭化水素系溶剤との混合物が開示されている。\n\n【0013】\n\nしかしながら、上述した潤滑剤を用いる方法によると、ある程度の改善効果は得られるものの、キャビティ内に均一に充填することは難しく、また充分な成形性が得られない。特に、ストリップキャスト法等の急冷法(冷却速度が102/秒〜104/秒)で作製された粉末は、インゴット法によって作製された粉末に比べて、平均粒径が小さいだけでなく粒度分布がシャープ(急峻)なので、特に流動性が悪い。そのため、キャビティに充填される粉末の量が許容範囲を超えてばらついたり、キャビティ内の充填密度が不均一になったりする。その結果、成形体の質量や寸法が許容範囲を超えてばらついたり、成形体に欠けや割れが生じることがある。\n\n【0014】\n\nR-Fe-B系合金粉末の流動性および成形性を改善するための他の方法として、造粒粉を用いる試みがなされている。\n\n【0015】\n\n例えば、特許文献6には、室温で液体状態のパラフィン混合物と脂肪族カルボン酸との混合物を粉末に対して0.4〜4.0質量%添加し、混練後、造粒することによって得られた造粒粉を用いることによって、成形性を改善できることが開示されている。また、造粒剤としてPVA(ポリビニルアルコール)を用いる方法も知られている。なお、造粒剤も潤滑剤と同様に成形体に強度を付与するバインダとして機能する。\n\n【0016】\n\nしかしながら、上記特許文献6に開示されている造粒剤を用いると、脱バインダ性が悪いため、R-Fe-B系焼結磁石の場合、焼結体中に残留する炭素によって磁気特性が低下するという問題がある。\n\n【0017】\n\nまた、PVAを用いてスプレードライヤ法で製造された造粒粉は、逆に、結合力が強いので、得られた造粒粉が固すぎ、外部磁界を印加しても造粒粉が完全に崩壊しない。従って、1次粒子を充分に磁界配向させることができず、その結果、優れた磁気特性を有する磁石が得られないという問題がある。PVAも脱バインダ性が悪く、PVAに由来する炭素が磁石に残存しやすい。この問題を解決するために水素雰囲気下で脱バインダ処理を行う方法もあるが、充分に炭素を除去することは難しい。\n\n【0018】\n\nまた、本願出願人は、造粒粉が配向磁界によって崩壊し難いという問題を解決するために、静磁界を印加した状態で造粒することによって、磁界配向した個々の粒子(1次粒子)が造粒剤で結合された造粒粉を製造する方法を提案した(特許文献7参照)。この造粒粉を用いると、磁界配向していない1次粒子を造粒剤で結合した造粒粉を用いた場合よりも、磁気特性は改善されるものの、プレス成形時に十分に磁界配向させることが困難なため、造粒していない希土類合金粉末を用いた場合よりも磁気特性が低い。\n\n【0019】\n\n【特許文献1】\n\n米国特許第4,770,723号明細書\n\n【特許文献2】\n\n米国特許第4,792,368号明細書\n\n【特許文献3】\n\n特開平08-111308号公報\n\n【特許文献4】\n\n米国特許5、666、635号明細書\n\n【特許文献5】\n\n特開2000-306753号公報\n\n【特許文献6】\n\n特開昭63-237402号公報\n\n【特許文献7】\n\n特開平10-140202号公報\n\n【0020】\n\n【発明が解決しようとする課題】\n\n上述したように、これまで種々の造粒剤や造粒方法が検討されてきたが、流動性やプレス成形性に優れ、且つ、優れた磁気特性を有する磁石を製造することが可能な希土類合金の造粒粉を工業的に生産できる方法は、まだ開発されていない。\n\n【0021】\n\n一方で、磁石の小型化·薄型化および高性能化へのニーズが高まっており、小型または薄型の高性能な磁石を高い生産効率で製造できる製造方法の開発が望まれている。一般に、\n\n希土類合金焼結体(またはこれを着磁した磁石)を機械加工すると加工ひずみの影響で磁気特性が低下するが、小型の磁石においてはこの磁気特性の低下を無視できない。従って、小型の磁石ほど、実質的に機械加工を必要としない程度の寸法精度で、使用される最終形状を有する焼結体を作製することが強く望まれる。このような背景からも、流動性やプレス成形性に優れた希土類合金粉末、特に、R-Fe-B系合金粉末に対する需要が一層強くなっている。\n\n【0022】\n\n本発明は、上記の諸点に鑑みてなされたものであり、流動性やプレス成形性に優れ、且つ、優れた磁気特性を有する磁石を製造することが可能な希土類合金の造粒粉の製造方法、および高品質の希土類合金焼結体を高い生産効率で製造する方法を提供することを主な目的とする。\n\n【0023】\n\n【課題を解決するための手段】\n\n本発明の希土類合金の造粒粉の製造方法は、(a)残留磁化を有する希土類合金の粉末を通気性を有する台板上に載置された状態で槽内に用意する工程と、(b)前記台板の下から上に流れる第1ガス流を前記槽内に生成する工程と、(c)前記第1ガス流によって前記粉末の粒子に運動エネルギーを与え、前記粉末の残留磁化による凝集力と、前記運動エネルギーによる転動作用とを利用して、実質的にゼロ磁界下で造粒する工程と、(d)前記台板に対して上から下に向けた第2ガス流を前記槽内に生成する工程と、(e)前記粉末からなる粉末層を前記台板上に形成し、前記第2流気によって前記粉末層を圧縮する工程とを包含し、工程(d)の少なくとも一部と工程(b)の少なくとも一部とを同時に実行することを特徴とし、そのことによって上記目的が達成される。\n\n【0024】\n\nある好ましい実施形態において、工程(d)と工程(b)とを同時に実行する期間は、前記第1ガス流の流量を減少させながら前記第2ガス流の流量を増加させる期間を含む。\n\n【0025】\n\n工程(a)は、残留磁化を有しない希土類合金の粉末を前記槽内に配置する工程と、前記槽内に配置された残留磁化を有しない前記粉末に磁界を印加することによって残留磁化を付与する工程とを包含してもよい。あるいは、工程(a)は、残留磁化を有する希土類合金の粉末を予め用意する工程と、残留磁化を有する前記粉末を前記槽内に配置する工程とを包含してもよい。\n\n【0026】\n\nある好ましい実施形態において、工程(b)、工程(c)、工程(d)および工程(e)がこの順序で複数回繰り返される。\n\n【0027】\n\nある好ましい実施形態において、前記繰り返しの間に、少なくとも1回の工程(e)の後に、(f)  前記第2ガス流を生成している状態で前記第1ガス流を一旦停止し、その後、前記第2ガス流を停止した状態で、工程(c)における前記第1ガス流の平均流量を超える流量の前記第1ガス流を生成させることによって、前記台板上に形成された前記粉末層を解砕する工程を包含する。\n\n【0028】\n\nある好ましい実施形態において、前記希土類合金はR-Fe-B系合金である。\n\n【0029】\n\nある好ましい実施形態において、前記粉末の平均粒径は1.5μm以上6μm以下の範囲内にある。\n\n【0030】\n\nある好ましい実施形態において、平均粒径が0.05mm以上3.0mm以下の範囲内にある造粒粉が製造される。\n\n【0031】\n\n本発明による希土類合金焼結体の製造方法は、上記のいずれかの希土類合金の造粒粉の製\n\n造方法を用いて造粒粉を製造する工程と、前記造粒粉に脱磁磁界を印加することなく、前記造粒粉を含む希土類合金の粉末をキャビティに充填する工程と、前記造粒粉を含む希土類合金の粉末に配向磁界を印加した状態でプレス成形することによって成形体を形成する工程と、前記成形体を焼結する工程とを包含することを特徴とする。\n\n【0032】\n\n本発明による希土類合金の造粒粉の製造装置は、希土類合金の粉末を受容する台板が設けられた槽と、前記槽に接続され、前記台板の下から上に流れる第1ガス流を前記槽内に生成することができる第1流路と、前記槽に接続され、前記台板の上から下に流れる第2ガス流を前記槽内に生成することができる第2流路とを有し、前記第1流路と前記第2流路とは、前記槽に対して互いに独立に接続されていることを特徴とし、そのことによって上記目的が達成される。\n\n【0033】\n\n前記第1流路内に調温装置および送風装置を更に備えていることが好ましい。\n\n【0034】\n\n前記第2流路内にバッファタンクを更に備えている構成としてもよい。\n\n【0035】\n\n前記槽内のガスの温度を検出する温度計を有し、検出された温度が所定の温度を超えると少なくとも前記送風装置の動作を停止させる制御回路を備えることが好ましい。\n\n【0036】\n\n動作中に前記槽内が正圧に維持されることが好ましい。\n\n【0037】\n\n前記台板上に載置された前記粉末に磁界を印加することができる磁界発生手段を更に備えている構成としてもよい。\n\n【0038】\n\n【発明の実施の形態】\n\n以下、図面を参照しながら、本発明による実施形態の造粒粉の製造方法ならびに希土類合金焼結体の製造方法を説明する。以下の実施形態の説明においては、磁気特性に優れる反面、特に流動性の低い、ストリップキャスト法で作製されたR-Fe-B系合金粉末を用いた焼結磁石の製造方法を例に本発明の特徴を説明するが、本発明はこれに限られず、他の方法によって製造された希土類合金粉末を用いてもよい。\n\n【0039】\n\n本発明による実施形態のR-Fe-B系合金焼結体の製造方法は、R-Fe-B系合金の粉末(以下、「原料粉末」または「1次粒子粉末」という。)を作製する工程と、原料粉末に残留磁化を付与する工程と、原料粉末の残留磁化による凝集力を利用して造粒する工程と、造粒粉を含むR-Fe-B系合金粉末に磁界を印加した状態でプレス成形することによって成形体を形成する工程と、成形体を焼結する工程とを包含する。得られた焼結体を公知の方法で着磁することによって、R-Fe-B系焼結磁石が得られる。なお、着磁工程は、焼結後の任意の時点で実行され、例えば、焼結磁石のユーザによって使用の直前に実行されてもよい。ここでは、未着磁のものも焼結磁石と呼ぶ。\n\n【0040】\n\n本発明による実施形態のR-Fe-B系合金焼結体の製造方法においては、原料粉末の残留磁化による凝集力を用いて造粒する。従って、造粒剤の添加量を低減したり、あるいは、従来よりも結合力が低い結合剤を用いることができる。さらには、造粒剤の添加を省略することすら可能になる。\n\n【0041】\n\n図1(a)、(b)および(c)を参照しながら、本発明の実施形態による造粒粉の製造方法および得られた造粒粉の特徴を説明する。図1の左側は造粒粉の構造を模式的に示す図であり、図1の右側はプレス成形のためのキャビティ内で配向磁界を印加された後の造粒粉の状態を模式的に示す図である。図1(a)は本発明の実施形態による造粒粉12a、(b)は造粒剤を用いた従来の造粒粉12b、(c)は上述の特許文献7に記載された\n\n方法によって得られた造粒粉12cをそれぞれ示している。\n\n【0042】\n\n図1(a)に示すように、本実施形態の造粒粉12aは、残留磁化を有する1次粒子10aが磁気的な凝集力によって弱く結合している。ここでは造粒剤を用いない場合を例示している。残留磁化を有する1次粒子10aは磁気的な閉回路を形成するように磁気的に結合し、造粒粉12aの残留磁化は僅か(例えば0mT超10mT以下(ミリテスラ)程度)である。造粒粉12a中の1次粒子10aの残留磁化の方向は、図1(c)に示す造粒粉12cとは異なり、ランダムに向いている。例えば、1次粒子10aの平均粒径は、1.5μm以上6.0μm以下であり、造粒粉12aの平均粒径は0.05mmから3.0mm程度である。残留磁化は、ガウスメータのプローブを造粒粉中に挿入して測定することができる。\n\n【0043】\n\nこの造粒粉12aは適度な粒径を有するので、流動性に優れ、且つ残留磁化も低いので、ブリッジングを起こすことなくキャビティに容易に均一に充填される。さらに、1次粒子10aは磁気的な凝集力によって結合しているだけなので、図1(a)の左側に図示するように、配向磁界(例えば0.1T〜0.8T)の印加によって確実に1次粒子10aに崩壊し、1次粒子10aは磁界配向する。また、造粒剤を含まないので、焼結体の炭素含有量を増加させることもない。この造粒粉12aを用いて製造された焼結体を着磁することによって得られる磁石は、原料粉末(残留磁化は実質的にゼロ)を造粒せずに用いて得られる磁石と実質的に同じ磁気特性を有する。すなわち、本発明の実施形態の造粒粉を用いることによって、磁気特性を低下させること無く、流動性および成形性を改善することができる。勿論、成形体の強度を向上するためなどの目的で、造粒剤を添加しても良い。造粒剤は補助的に用いられるので強い結合力は不要であり、磁気特性を低下させないように、その量や種類を選択すればよい。\n\n【0044】\n\nこれに対し、図1(b)に示したように、原料粉末の1次粒子10bを造粒剤14によって結合した造粒粉12bは、配向磁界では十分に崩壊せず、その結果、得られる焼結磁石の磁気特性が低下する。原料粉末を造粒せずに用いた場合に比べて、例えば、残留磁化は1%〜10%程度低下する。なお、図1(b)の造粒粉12b中の1次粒子10bは、残留磁化を有していないので、矢印を記載していない。\n\n【0045】\n\nまた、図1(c)に示したように、静磁界中で1次粒子10cを配向させながら、造粒剤14で1次粒子10cを結合、固定した造粒粉12cを用いると、磁気特性の低下は抑制されるものの、造粒粉12cが完全に1次粒子10cまで崩壊しないので、原料粉末を造粒せずに用いた場合に比べて、例えば、残留磁化は1%〜数%程度低下する。また、図1(c)に模式的に示したように、造粒粉12cは磁極の方向に沿った細長い形状になり、流動性の観点から不利である。さらに、造粒粉12cは比較的大きな残留磁化を有しているので、一旦、脱磁(消磁)しないと、ブリッジングを起こすのでキャビティに充填できない。\n\n【0046】\n\nこれに対し、本発明の実施形態による造粒粉12aは、球形に近く、且つ、残留磁化も小さいので脱磁を必要とせず、キャビティに容易に均一に充填することができる。従って、予め所定の質量の造粒粉を計量してからキャビティに充填する、いわゆる計量充填法を採用することができる。上述したように、本発明の実施形態の造粒粉12aは、流動性およびキャビティへの充填性に優れ、且つ、実質的に磁気特性の低下がない焼結磁石を製造することができる。\n\n【0047】\n\n本発明の実施形態の造粒粉は、残留磁化を有する原料粉末の粒子に運動エネルギーを与え、粒子が与えられた運動エネルギーによる転動作用によって成長する過程を含む造粒方法によって得られる。また、必要に応じて、造粒剤を添加しても良い。\n\n【0048】\n\n本発明の実施形態による造粒粉の製造方法において、原料粉末に残留磁化を付与する工程は、造粒装置の槽(造粒槽)に原料粉末を充填する前に行っても良いし、槽内に装填した後に行っても良い。但し、本実施形態による造粒粉12aの1次粒子10aは、残留磁化による磁気的な凝集力で結合しているので、外部から磁界を印加すると造粒粉12aは崩壊する。従って、粒子の成長過程は実質的にゼロ磁界下で行われるようにする。これは、図1(c)に示した造粒粉12cの製造方法では、造粒粉12が最終的に造粒剤14によって固定されるまで、1次粒子10cを配向させるために磁界を印加し続ける必要があるのと対照的である。なお、本明細書における「実質的なゼロ磁界」とは、粒子が転動作用によって成長する過程で、粉末の残留磁化によって磁気的な閉回路が形成された造粒粉が得られる程度および粉末の残留磁化に影響を及ぼさない程度の弱い磁界をいう。\n\n【0049】\n\n残留磁化を付与するために印加する磁界は種々の磁界を用いることができる。なお、1次粒子が有する残留磁化はわずかでよいので、交番減衰磁界を用いることが好ましい。なお、残留磁化を付与するための磁界は、交番減衰磁界に限られず、単調減衰磁界や他のパルス磁界や静磁界を用いてもよい。\n\n【0050】\n\nなお、残留磁化を付与しても原料粉末の保磁力が小さいと、最終的な造粒粉が得られるまでの間に消磁してしまい、造粒粉の形状を維持できないことがある。従って、原料粉末の保磁力が比較的高いものが好ましい。具体的には、原料粉末を嵩密度が2.0g/cm3となるように容器に充填し、BHトレーサで測定した保磁力の値を原料粉末の見掛け上の保磁力とすると、原料粉末は、70kA/m以上の保磁力を有することが好ましく、80kA/m以上の保磁力を有することがさらに好ましい。例えば、R-Fe-B系合金の場合には、Dyを2質量%以上、またはTbを1質量%以上、またはDyとTbとの合計を1質量%以上含む合金が好ましい。\n\n【0051】\n\nプレス成形に供せられるR-Fe-B系合金の粉末としては、上述のようにして製造された造粒粉のみを用いることが流動性や成形性の観点からは好ましいが、造粒粉と原料粉末(1次粒子粉末)とを混合して用いることもできる。但し、原料粉末の割合が増えると流動性が低下するので、造粒による流動性の改善効果を十分に得るためには、実質的に造粒粉のみを用いることが好ましい。また、造粒粉に混合して原料粉末を用いる場合には、粒子表面が潤滑剤で被覆されていることが好ましい。1次粒子の表面を潤滑剤で被覆することによって、R-Fe-B系粉末の流動性を改善することができるとともに、R-Fe-B系合金の酸化を防止することができる。また、磁界プレス工程における配向性も改善される。なお、本願明細書においては、実質的に希土類合金のみの粉末(表面の酸化物層は含み得る)だけでなく、希土類合金の粉末とともに造粒剤や潤滑剤を含むプレス成形に供せられる粉末も希土類合金の粉末と呼ぶことにする。\n\n【0052】\n\n本発明による実施形態のR-Fe-B系合金焼結体を用いた磁石の製造方法を工程順に説明する。\n\n【0053】\n\nまず、ストリップキャスト法を用いて、R-Fe-B系合金フレークを作製する(例えば、米国特許第5,383,978号参照)。具体的には、公知の方法によって製造された、R-Fe-B系合金を高周波溶解により溶湯とする。なお、R-Fe-B系合金としては、上記の他に、例えば米国特許第4,770,723号および米国特許第4,792,368号の明細書に記載されている組成のものを好適に用いることができる。R-Fe-B系希土類合金の典型的な組成では、RとしてNdまたはPrが主に用いられ、Feは部分的に遷移元素(例えばCo)に部分的に置換されてもよく、BはCによって置換されてもよい。\n\n【0054】\n\nこの合金の溶湯を1350℃に保持した後、ロール周速度を約1m/秒、冷却速度500℃/秒、過冷度200℃の条件で単ロール上で急冷し、厚さ0.3mmの合金フレークを得る。この合金フレークに水素を吸蔵させ、脆化させることによって合金粗粉末を得る。この合金粗粉末をジェットミル装置を用いて窒素ガス雰囲気中で微粉砕することによって、例えば平均粒径が1.5μm〜6μmで、BET法による比表面積が約0.45m2/g〜約0.55m2/gの合金粉末(原料粉末)が得られる。この原料粉末の真密度は、7.5g/cm3である。\n\n【0055】\n\n次に、得られた原料粉末に残留磁化を付与する。ここでは、ピーク磁界が1.0Tの交番減衰磁界を印加する。\n\n【0056】\n\n次に、残留磁化を有する原料粉末を造粒する。ここでは、流動層造粒法を用いる。流動層造粒法を用いると、球形に近い形状の造粒粉を得ることができるとともに、適度な固さの造粒粉を得ることができる。造粒粉が球形に近い形状を有していると、流動性および成形性に優れる。また、造粒粉の固さは、造粒剤の影響も受けるが、上述したように固すぎても柔らか過ぎても不都合を生じる。\n\n【0057】\n\nなお、従来の流動槽造粒法においては、槽内を下から上に流れるガス流によって粉末を流動(「整流」ともいう。)させる工程(流動過程)と、上から下に流れるガス流によって粉末の層を圧縮する工程(圧密過程)とが独立して行われていた。例えば、特許第3019953号公報(例えば図3)に記載されている流動圧縮装置では、流動過程を行わせるためのガス流(「第1ガス流」ということにする。)と、圧密過程を行わせるためのガス流(「第2ガス流」ということにする。)とが切替えられる構成になっており、槽内に両方のガス流を発生させることができなかった。\n\n【0058】\n\n本発明者が種々実験を行った結果、流動過程を行わせる第1ガス流と、圧密過程を行わせる第2ガス流とを槽内に同時に存在させることによって、希土類合金の造粒粉をより効率的に製造できることがわかった。\n\n【0059】\n\nこれは、希土類合金の真比重が7.5g/cm3と大きいこと、および/または、残留磁化という比較的弱い力を利用して造粒粉を製造するためと考えられる。これは、結合剤を用いない場合には、第1ガス流と第2ガス流とが槽内に共存した状態を経てから、圧密過程を実行しないと、造粒粉の製造歩留まりが低下するのに対し、結合剤を用いた場合には、従来法との優位差が確認されなかったという実験事実に基づいている。しかしながら、第1ガス流と第2ガス流とが共存することによって、造粒粉の製造効率が向上する理由は良くわかっていない。\n\n【0060】\n\n図2および図3をしながら、本発明の実施形態による造粒粉の製造方法および製造装置を詳細に説明する。\n\n【0061】\n\n図2は、本発明の実施形態による造粒粉の製造方法に好適に用いられる造粒粉の製造装置100の構造を模式的に示す図であり、図3(a)および(b)は、本発明の実施形態による造粒粉の製造方法における槽内の流気の状態(流量の時間変化)を模式的に示すグラフである。\n\n【0062】\n\n図2に示した造粒粉の製造装置100は、槽(流動槽)10と、槽10に接続され下から上に流れる第1ガス流を槽10内に生成することができる第1流路20(a)と、槽10に接続され上から下に流れる第2ガス流を槽10内に生成することができる第2流路30(b)とを有しており、第1流路20(a)と第2流路30(b)とは槽10に対して互いに独立に接続されている。なお、参照符号20および30は、それぞれ第1流路および\n\n第2流路を構成する物理的な構造を主に指す場合に用い、参照符号aおよびbは、それぞれ第1流路および第2流路におけるガス流の経路を主に指す場合に用いる。\n\n【0063】\n\n槽10は、その底部に希土類合金の粉末が充填された容器42を受容する構造を有している。容器42の底板(台板)42bは通気性を有しており、例えば網や布で形成され得る。作業性の観点から、上述のような容器42を用いることが好ましいが、槽10が通気性の台板を有していれば他の構造であってもよい。\n\n【0064】\n\n容器42の底板42b上に載置された希土類合金の粉末は、底板42bに対して下から上に流れる第1ガス流によって運動エネルギーが与えられ、流動化する。このとき、希土類合金の粉末の残留磁化による凝集力と、第1ガス流によって粉末に与えられた運動エネルギーによる転動作用とを利用して、実質的にゼロ磁界下で造粒過程が行われる。また、粉末の自重および/または第2ガス流によって底板42b上に粉末層が形成され、第2流気によってこの粉末層を圧縮することによって圧密過程が行われる。\n\n【0065】\n\n第1流路20は、調温装置22、送風装置(例えば送風用ブロア)24および配管26を有し、バルブ27および28によって槽10に接続(連結)されており、槽10内のガスを循環させる第1流路aを形成している(図2中の矢印A1およびA2参照)。希土類合金粉末の酸化を抑制するために、不活性ガス(希ガスまたは窒素ガス)を用いることが好ましく、ここでは窒素ガスを用いる。なお、ガスに含まれる酸素ガスの体積分率は0.1%以下に制御することが好ましい。\n\n【0066】\n\nまた、希土類合金の粉末の温度が高くなりすぎると保磁力が低下し、粉末の凝集力が低下する結果、造粒粉が形成され難くなるため、および/または希土類合金の粉末の酸化を抑制するために、ガスの温度を10℃以上40℃以下の範囲内に制御することが好ましく、20℃以上30℃以下の範囲内に制御することがさらに好ましい。勿論、必要に応じて、ガスから水分を除去するために調湿装置を設けても良い。\n\n【0067】\n\n送風装置24は、調温装置22によって温度制御されたガスを用いて第1ガス流を生成する。槽10内に生成される第1ガス流の流量は、送風装置24の出力および/またはバルブ27の開度を調整することによって行われる。\n\n【0068】\n\n第2流路30は、バッファタンク32および配管36を有し、バルブ37および38によって槽10に接続(連結)されており、槽10内のガスを循環させる第2流路bを形成している(図2中の矢印B1およびB2参照)。なお、バッファタンク32はレギュレータ33を介して元配管(例えば工場用窒素ガス配管)34に接続されている。元配管34に供給される窒素ガスの圧力は例えば約7kg/cm2であり、レギュレータ33によって数kg/cm2に降圧されている。槽10内に生成される第2ガス流の流量は、バルブ37および38の開度を調整することによって行われる。\n\n【0069】\n\n第1流路20および第2流路30の両端はそれぞれ槽10に接続されており、ガスの流路は実質的にクローズとなっている。従って、槽10内の窒素ガスの状態(温度·湿度)などを効率良く制御できるとともに、窒素ガスの消費量を低減することができる。しかしながら、完全なクローズシステムとすると、ガス流の調節が難しいので、バルブ46を介して排気管44を槽10に接続し、所定の抵抗で槽10内の窒素ガスを排気する構成を採用することが好ましい。このとき、少なくとも動作時に、槽10内の圧力が槽10外の雰囲気の圧力(大気圧)よりも高く維持されるように、排気管44の抵抗を調整することが好ましい。\n\n【0070】\n\nさらに、希土類合金の粉末は酸化されやすいため、温度が異常に上昇すると爆発の危険す\n\nらある。従って、槽10内の温度を検出するための温度計18を設け、槽10内の温度が予め決められた温度を超えた場合に、少なくとも送風装置24の動作を停止する制御回路を設けることが好ましい。もちろん、バルブ27、28、37、38および46を電磁バルブで構成し、予め決められた温度を超えた場合にはこれらを閉じるように制御してもよい。種々の経験から、R-Fe-B系合金を用いる場合、50℃を超えると急激な酸化(発火や爆発を伴う場合もある)が起こる可能性が高くなるので、上記の停止動作を開始させる温度は50℃に設定することが好ましい。\n\n【0071】\n\nなお、槽10は、容器42を受容する底部およびその付近と、これらの上部に位置する胴体部において、内径が異なっている。図2に示したように、槽10の底部の内径D1は胴体部の内径D2よりも小さく、胴体部に近づくほど大きくなっている。このような構造の槽10を用いると、第1流路20によって槽10内に生成される第1流気の流速が、上方に行くに連れて低下するので、第1流気によって浮遊させられた粉末を効率良く落下させることができる。胴体部の内径D2よりも内径が小さい底部の長さ(高さ)は、例えば、槽10の全体の長さの20%程度であり、底部の内径D1の最小値(底板42bが位置する部分の内径)は、例えば、D2の50%程度である。\n\n【0072】\n\n造粒粉製造装置100は、容器42内に充填された希土類合金の粉末に磁界を印加することができる磁界発生手段40を更に備えている。磁界発生手段40は、例えば、コイルとヨークとを有する電磁石であり、交番減衰磁界を発生し得るものが好ましい。勿論、槽10の外部で残留磁化を与えた希土類合金の粉末を用いる場合には、磁界発生手段40を省略することができる。\n\n【0073】\n\n次に、図3(a)および(b)を参照しながら、本発明の実施形態における造粒粉の製造方法における槽10内の流気の状態を説明する。図3(a)は動作開始時点からの一連の工程(1サイクル)を示しており、図3(b)は解砕工程を含む一連の工程(1サイクル)を示している。\n\n【0074】\n\nまず、図3(a)を参照ながら、残留磁化を有する希土類合金の粉末が充填された容器42が装置100の所定の位置にセットされた後の槽10内の流気の状態を説明する。\n\n【0075】\n\n容器42がセットされた直後は、第1流気aの流量a0および第2流気の流量b0はいずれもゼロである。温調装置22および送風装置24の動作を開始し、バルブ27および28を開け、槽10内に第1流気aを生成させる。第1流気aの流量は徐々に上昇し、定常状態の流量a1に到達する。この状態で、粉末は槽10内で転動作用を受けながら残留磁化による凝集力によって造粒される。この間、槽10の中央付近に存在する粉末(造粒過程にある粒子を含む)は第1流気aによって重力に逆らいながら浮遊させられ、流速が低い弱い槽10の内壁付近の粉末は自重によって落下する。\n\n【0076】\n\n第1流気aの流量を所定の時間(例えば約20分間)だけほぼ一定に維持した状態で、バルブ37および38を開け、第2流気bの生成を開始する(開始点における流量b1)。第2流気bの流量を徐々に増加させ、定常的な流量b2に到達する前に、第1流気aの流量を減少させる(減少開始点の流量をa2)。すなわち、第1流気aの流量を減少させながら第2流気bの流量を増加させる期間(図3(a)におけるa2〜b2に相当する期間)がある。このように、第1流気aと第2流気bとが槽10内に同時に存在する期間が存在することによって、希土類合金の造粒粉をより効率的に製造できる。この理由は必ずしも明らかではないが、第1流気aを急激に停止したり、あるいは、第1流気aの流量に対して第2流気bの流量が多くなりすぎると造粒粉が急激に落下するので、衝撃によって造粒粉が破壊されるためと考えられる。また、第1流気aを完全に停止した後で、第2流気bの生成を開始すると、槽10内が負圧になり、圧力の制御が難しくなるので、好ましくな\n\nい。\n\n【0077】\n\n上述したように、第1流気aの流量を徐々に減少させながら、第2流気bの流量を増加させると、造粒粉が底板42b上に落下した際に衝撃によって破壊されること無く、粉末層が形成され、その後、第2流気bによって圧縮され、粉末層が圧密化される。この圧密化過程によって造粒粉の固さが増加する。\n\n【0078】\n\n図3(a)に示したサイクルを繰り返すことによって、適度な固さの造粒粉を得ることができる。但し、2回目以降のサイクルの開始時点における第1流気aの流量は図3(a)に示したようにゼロ(a0)である必要は無く、図3(a)に示したサイクルの終了時点の流量a3であってもよい。\n\n【0079】\n\n図3(a)に示したサイクルを繰り返すだけでは、底板42b上で圧縮された粉末層を十分に解砕できず、粗大粒が生成されることがある。そこで、粉末層をより確実に解砕するために、図3(b)に示したサイクルを実行することが好ましい。\n\n【0080】\n\n図3(b)における点b1’以降の工程から説明する。ここでは、図3(b)における点b1’までは、図3(a)における点b1までの工程が実行され、その後に、図3(b)の工程が実行される場合を説明する。\n\n【0081】\n\n上述したのと同様にして、第2流気bの生成を開始(開始時点の流量b1’)し、第2流気bの流量が定常状態の流量b2’に到達する前に、第1流気aの流量を減少し始める(減少開始時点の流量a2’)。その後、バルブ27および28を閉じ、第1流気aを停止した状態を維持する(図3(a)中の点a3’〜点a4’:α分間)。この間に送風装置24を運転しつづけると送風装置24からバルブ27までの配管26内のガス圧が上昇する。逆に言うと、粉末層を解砕するための所定の圧力が得られるまでの間、バルブ27を閉じておく。その後、バルブ37および38を閉じて第2流気bを停止(図3(b)の点b0’)するとともに、バルブ27および28を開け、第1流気aを発生させる(図3(b)の点a0’)。このときに槽10内に生成される第1流気aの流量a0’は、図3(a)における定常的な第1ガス流aの流量a1(=a2)を超える流量となり、効率的に粉末層を解砕することができる。転動作用を得るための第1流気aの流量は、典型的には図3(a)に示したようにほぼ一定(a1=a2)に保たれるが、変動してもよい。この場合、粉末層を解砕するための第1流気aの流量は、転動作用を得るための第1流気aの平均流量よりも多いことが好ましい。\n\n【0082】\n\n上記の例では、バルブ37および38を操作することによって、流用a0’の第1流気aを生成させたが、送風装置24の送風能力を制御することによって第1流気aの流量を調節しても良いし、バルブ操作と組み合わせてもよい。なお、図3(b)中の流量a1’および流量a2’は、それぞれ図3(a)の流量a1および流量a2と同じであってよい。\n\n【0083】\n\n残留磁化を利用して形成される造粒粉は、ある適度大きくなると、磁気的な閉回路を形成するので、造粒粉間に働く磁気的な吸引力が弱くなるので、図3(b)に示した解砕用のサイクルが必要なくなる。従って、例えば、図3(a)の示した基本的なサイクルと、図3(b)に示した解砕用のサイクルとを合計で30回繰り返すことによって所定の造粒粉が得られるプロセスでは、最初の20回のサイクル内に、解砕用のサイクルを5回〜10回含めることが好ましい。\n\n【0084】\n\nなお、残留磁化を有する原料粉末を用いると、残留磁化を有しない原料粉末を用いた場合よりも短時間(例えば約半分の時間)で所望の造粒粉が得られる。これは、残留磁化を有する原料粉末を用いると、造粒粉を生成するための核が1次粒子間の磁気的な凝集力によ\n\nって容易に生成されるためと推察される。\n\n【0085】\n\n造粒粉の平均粒径は0.05mm〜3.0mmの範囲内にあることが好ましい。一般に、造粒粉に含まれる1次粒子はわずかであり、また3次粒子以上の高次の造粒粉も非常に少ないので、実質的に2次粒子の平均粒径が造粒粉の平均粒径を代表するものとして扱うことができる。ここでは、造粒粉の平均粒径として、顕微鏡観察によって求めた2次粒子の平均粒径を用いる。造粒粉の平均粒径が0.05mmより小さいと、流動性の改善効果が低く、十分な密度で均一な成形体を得ることが難しい。一方、造粒粉の平均粒径が3mmより大きいと、キャビティへの充填性が低下し、十分な密度で均一な成形体を得ることが難しい。造粒粉の平均粒径は、0.1mm〜2.0mmの範囲内にあることがさらに好ましい。\n\n【0086】\n\n次に、得られた造粒粉をプレス成形することによって成形体を形成する。ここでは、造粒粉だけを用いて成形体を形成する。プレス成形には公知のプレス成形装置を用いることができ、典型的には、上下パンチで金型のキャビティ(ダイホール)内の粉末をプレスする一軸プレス成形装置が用いられる。造粒粉末の移送は、例えば、気密性の高い容器内に窒素ガスを充満または流気させた状態で、バッチごとに行う。\n\n【0087】\n\n一軸プレス成形機の金型のキャビティに造粒粉を充填する。造粒粉をキャビティに充填する工程は、例えば、ふるいを用いた充填方法や、特公昭59-40560号公報、特開平10-58198号公報、実開昭63-110521号公報や特開2000-248301号公報に開示されているようなフィーダボックスを用いた充填方法(これらを総称して「落とし込み方法」ということもある。)を用いて実行することができる。\n\n【0088】\n\n特に、小さい成形体を形成する場合、キャビティの内容積に対応する量の造粒粉を、キャビティを用いて計量することが好ましい。例えば、下方に開口部を有するフィーダボックスをキャビティ上に移動させ、造粒粉を重力落下(自然落下)させた後、キャビティに供給された余剰の造粒粉をすりきることによって、比較的均一に、所定量の造粒粉を充填することができる。勿論、別途計量した造粒粉を漏斗などを用いてキャビティに充填しても良い。\n\n【0089】\n\nキャビティ内に造粒粉を充填した後、一軸プレス装置の上パンチを降下し、キャビティの開口部を塞いだ状態で、配向磁界を印加し、造粒粉を1次粒子に崩壊させるとともに、1次粒子を磁界配向させる。本発明の実施形態による造粒粉は、0.1T〜0.8Tの比較的弱い磁界で確実に1次粒子に崩壊する。但し、充分な配向度を考慮すると、0.5T〜1.5T程度が望ましい。磁界の方向は、例えばプレス方向と垂直方向である。このように磁界を印加しながら、例えば98MPaの圧力で、上下パンチで粉末を一軸プレスする。その結果、相対密度(成形体密度/真密度)が0.5〜0.7の成形体が得られる。なお、磁界の方向は、必要に応じてプレス方向に対して平行としてもよい。\n\n【0090】\n\n次に、得られた成形体を、真空中または不活性ガス雰囲気中で、例えば約1000℃〜約1180℃の温度で、約1時間から6時間焼結する。本実施形態の造粒粉は、造粒剤を含まない、あるいは、焼結工程に実質的に除去され得る程度の造粒剤しか含まないので、脱バインダ工程を別途設ける必要がない。なお、従来の典型的な脱バインダ工程は、約200℃〜800℃の温度で、約2Paの圧力の不活性ガス雰囲気下で、約3時間〜約6時間実行されている。\n\n【0091】\n\n得られた焼結体を、例えば約450℃〜約800℃の温度で、約1時間〜8時間時効処理することによって、R-Fe-B系焼結磁石が得られる。この後、任意の段階で、着磁することによってR-Fe-B系焼結磁石が最終的に完成する。\n\n【0092】\n\n本発明によると、上述したように流動性および成形性に優れた造粒粉を用いるので、充填量のばらつきが少なく、且つキャビティ内に均一に充填される。従って、プレス成形によって得られた成形体の質量および寸法のばらつきが少ない。また、成形体に欠けや割れが発生することも少ない。\n\n【0093】\n\nさらに、本実施形態の造粒粉の1次粒子は、実質的に残留磁化の磁気的な凝集力によって結合しているので、配向磁界の印加によって1次粒子に確実に崩壊する。従って、1次粒子の配向度が低下することがない。また、造粒剤の炭素が焼結体中に残存することによる磁気特性の低下も最小限に抑制されるので、優れた磁気特性を有する焼結磁石を得ることができる。このように、本発明によると、高品質のR-Fe-B系合金焼結磁石を高い生産効率で製造することができる。\n\n【0094】\n\n【実施例】\n\n以下、本発明の実施例を説明する。\n\n【0095】\n\nR-Fe-B系合金粉末を以下の様にして作製した。出発原料として、純度99.9%の電解鉄、Bを19.8%含有するフェロボロン合金、純度99.7%以上のNdおよびDyを用いて、合金溶湯を調製した。この合金溶湯からストリップキャスト法で30.0質量%Nd、5.0質量%Dy、64.0質量%Fe、1.0質量%Bの組成のR-Fe-B系合金のフレークを得た。これをジェットミルを使用し、不活性ガス(例えばN2ガス、ガス圧58.8MPa)中で微粉砕し、平均粒径が約3μmの原料粉末を得た。\n\n【0096】\n\n次に、実施例用の原料粉末に、交番減衰磁界(ピーク磁界1.0T)を印加し、残留磁化を付与した。\n\n【0097】\n\n次に、上述した製造装置100を用いて造粒粉を製造した。\n\n【0098】\n\n槽10の内径(D2)は、300mm、内容積は約7×104cm3、図3(a)および(b)における流量a1=a2=a1’=a2’は約1m3/min、流量a0’は約2.0m3/min、流量b2=b3=b2’=b3’は約0.75m3/minとした。希土類合金の原料粉末の投入量は、約5kgとし、窒素ガスの温度は約30℃に制御した。\n\n【0099】\n\nなお、実施例2から3および比較例2および3の造粒粉の製造には、本願出願人らによる特願2001-96572号に記載されているポリブテンとイソパラフィンを造粒剤として用いた。\n\n【0100】\n\n実施例および比較例のいずれの場合も、造粒粉の平均粒径が0.5mmとなるように条件を設定した。得られた造粒粉の残留磁化は0.2mT程度であった。実施例1から3の造粒工程は約15分であり、比較例2および3の造粒工程は約30分を要した。なお、比較例1は、原料粉末(磁界の印加を行っていない)を造粒することなしに用いた。実施例1から3および比較例1から3のそれぞれにプレス用粉末の調製条件を表1にまとめて示す。\n\n【0101】\n\n【表1】\n\n\n\n【0102】\n\nまた、表1には、それぞれのプレス用粉末の安息角をあわせて示す。安息角が大きい粉末は流動性が悪く、安息角が小さいものほど流動性が優れている。比較例1として示したように、原料粉末を造粒しないと安息角は約52°と大きく、流動性が低い。これに対し、造粒を行った実施例1〜3、比較例2および3のいずれのプレス粉末も安息角は50°未満まで低下している。特に、実施例1および2のプレス粉末は、比較例2のプレス粉末(造粒剤の添加量1質量%)よりも安息角が小さく、流動性が優れている。すなわち、残留磁化を利用することによって、従来よりも少ない造粒剤の添加によって、流動性が改善されることがわかる。なお、造粒剤の添加量が2質量%の実施例3および比較例3では、流動性に差が見られなった。\n\n【0103】\n\n表1に示したそれぞれのプレス用粉末を、上述したフィーダボックスを用いた方法で、縦20mm、横15mm、深さ10mmのキャビティ内に充填し、一軸プレス成形(98MPa、配向磁界(0.8T)をプレス方向に直角に印加)を行った。この充填工程およびプレス成形工程は、全ての実施例および比較例について同じ条件で行った。なお、プレス条件を変えて成形体密度(グリーン密度)の異なる成形体を形成した。\n\n【0104】\n\n実施例1と比較例1のプレス成形体の質量ばらつき(%)と充填量ばらつき(σ)を評価した。成形体の質量ばらつきは、{(最大質量-最小質量)/平均質量(n=50)}×100(%)で求めた。また、充填量ばらつき(σ)は、50個の成形体の質量分布の標準偏差を示している。実施例1の成形体の質量ばらつきは約4%であり、比較例1の質量ばらつき約15%に比べて著しく改善されている。これは、充填量ばらつき(σ)についても同様で、比較例1の充填量ばらつき(σ)が約0.33であるのに対し、実施例1の充填量ばらつき(σ)は0.16と大きく改善されており、造粒によって流動性が改善されたことがわかる。勿論、造粒によって、成形性も同様に改善されており、成形体に欠けや割れが発生する割合も、比較例1に比べ著しく少なかった。これらの造粒の効果は、他の実施例についても確認された。\n\n【0105】\n\n得られた成形体をAr雰囲気中で、1060℃にて約4時間焼結したあと、600℃で1時間の時効処理を施し、焼結体を得た。さらに、この焼結体を2387kA/mの条件で着磁することによって、焼結磁石を得た。それぞれの実施例および比較例について、サンプル数は50個とした。\n\n【0106】\n\n得られた焼結磁石の残留磁化Br(T)を図4に示す。図4からわかるように、実施例1(図4中の黒丸)のBrは、比較例1(図4中の白丸)のBrと実質的な差異は認められず、優れた磁気特性を有している。造粒剤を添加した実施例2および実施例3のBrは、\n\n同量の造粒剤を添加し残留磁化を有していない原料粉末を用いた比較例2および比較例3のBrとほぼ同等であった。残留磁化を利用して造粒する場合においても、造粒剤はできるだけ少ない方が好ましい。\n\n【0107】\n\n上述したように、1次粒子の残留磁化による磁気的な凝集力を利用して造粒粉を作製することによって、造粒剤の結合力のみを用いて造粒粉を用いる場合に比べて、造粒剤の添加量を減らしても同等以上の流動性を得ることができるので、従来の同等以上の生産性で、従来よりも優れた磁気特性を有する焼結磁石を製造することができる。さらに、1次粒子の残留磁化のみを用いて造粒粉を作製すれば、磁気特性の低下を実質的に無くすことができる。\n\n【0108】\n\n【発明の効果】\n\n本発明によると、流動性やプレス成形性に優れ、且つ、優れた磁気特性を有する磁石を製造することが可能な希土類合金の造粒粉の製造方法が提供される。この造粒粉を用いることによって、高品質の希土類合金焼結体を高い生産効率で製造する方法が提供される。\n\n【0109】\n\n本発明によると、磁気特性を低下させることなく、希土類合金粉末の流動性および成形性を改善することができるので、従来は磁気特性を犠牲にしていたプレス成形が困難な形状の焼結磁石の磁気特性を向上することができる。さらに、造粒時間の短縮や、脱バインダ工程の省略が可能となり、希土類焼結磁石の生産性を向上することができる。\n\n【図面の簡単な説明】\n\n【図1】(a)は、本発明の実施形態による造粒粉の構造を模式的に示す図であり、(b)および(c)は比較のための従来の造粒粉の構造を模式的に示す図である。\n\n【図2】本発明による実施形態のR-Fe-B系合金造粒粉の製造に用いられる造粒装置100を模式的に示す図である。\n\n【図3】(a)および(b)は、本発明の実施形態による造粒粉の製造方法における槽内の流気の状態(流量の時間変化)を模式的に示すグラフである。\n\n【図4】本発明の実施例の造粒粉および比較例の造粒粉を用いて得られた焼結磁石の残留磁束密度Brを示すグラフである。\n\n【符号の説明】\n\n10a、10b、10c  1次粒子\n\n20a、20b、20c  造粒粉\n\n10  槽(流動槽)\n\n20  第1流路\n\n22  調温装置\n\n24  送風装置\n\n26、36  配管\n\n27、28  バルブ\n\n30  第2流路\n\n37、38  バルブ\n\n40  磁界発生装置\n\n42  容器\n\n42b  底板\n\n44  排気管\n\n46  バルブ', '【0001】\n\n技术领域\n\n本发明涉及一种制备稀土合金颗粒粉末的方法,其制造稀土合金的制造装置及制造稀土合金烧结体的方法。\n\n【0002】\n\n发明背景\n\n稀土合金的烧结磁体(永磁体)通常通过压制稀土合金的粉末和烧结所获得的粉末和老化的模塑体来制造。目前,在每个场中广泛使用两种类型的稀土,基于钴基磁体和稀土和铁 - 硼基磁体。其中,稀土,铁,基于硼基磁铁(下文中称为“R-Fe-B基磁体”。R是含有Y,Fe的稀土元素是铁,B是硼。)是不同的磁铁由于显示了最高最大磁能产品并且价格相对较低,因此可以为各种电子设备进行积极采用。\n\n【0003】\n\nR-Fe-B基烧结磁铁主要是r2Fe.14它由富含R的富相位组成,该相由B平方化合物,Nd等组成,富含B的相。 Fe的一部分可以被诸如CO或Ni的过渡金属代替,并且硼(B)的一部分可以被碳(C)取代。适当地施加本发明的基于R-Fe-B的烧结磁体,例如,专利文献1和专利文献2中描述。\n\n【0004】\n\n为了生产R-Fe-B基合金,通常使用铸锭铸件。根据一般的铸锭铸造方法,通过减少稀土金属,电解质和硼隆合金,即作为起始材料,并在模具中相对缓慢地冷却所得熔融金属的合金铸锭。\n\n【0005】\n\n近年来,通过接触单辊,硼驼,旋转盘或旋转圆柱形模具,以及用锭(“合金薄片”(“合金薄片”的凝固合金(“合金薄片”)相对快速地冷却合金的熔融金属。它将被称为产生)的剥离铸造方法,并且由离心铸造方法表示的淬火方法引起关注。通过这种猝灭产生的合金片的厚度通常在约0.03mm或更大约10mm或更小的范围内。根据淬火方法,合金熔融金属开始与冷却辊接触的表面(辊接触表面)凝结,并且晶体从辊接触​​表面沿厚度方向生长。结果,在短轴方向上由条形铸造方法等产生的突然冷却合金为约0.1μm以上且约100μm或更小,并且长轴方向的尺寸为约5μm或更高小于约500μm或更小。2Fe.14b晶相和r2Fe.14B含有富含R的富相的组织分散在结晶相的晶界中。富含R的相是具有相对高浓度的稀土元素R的非磁性相,其厚度(对应于晶界的宽度)为约10μm或更小。\n\n【0006】\n\n与通过常规锭铸件产生的合金(铸锭合金)相比,淬火合金是相对较短的(冷却速率:10)(模具铸造)2°C / S或更多,104由于它在℃/秒或更小于)中,因此组织小型化并且具有晶粒尺寸小的特征。\n\n另外,由于晶界面积宽,并且R-富级相在晶界中广泛扩散,因此有一个优点是R-富含相的分散性优异。因此,通过这些特征,可以通过使用淬火合金来制造具有优异磁性的磁体。\n\n【0007】\n\n另外,还已知一种称为CA缩写方法(或还原扩散方法)的方法。该方法包括以下步骤。首先,稀土氧化物中的至少一种,含有至少一种铁粉和纯硼粉末,芳香族粉末和氧化硼的混合粉末,或上述组成元素的合金粉末,或者金属钙(CA)和将氯化钙(CaCl)与混合氧化物或混合氧化物混合,并进行氯化钙(CaCl),并且在惰性气体气氛下进行降低扩散处理。所得反应产物浆化,通过水处理获得R-Fe-B合金的固体。\n\n【0008】\n\n在本说明书中,固体合金的质量被称为“合金质量”,并且通过合金铸锭获得的合金薄片如通过常规铸锭铸造方法获得的合金薄片,不仅可以冷却凝固合金但是,还含有Ca还原方法获得的固体合金等固体合金。\n\n【0009】\n\n用于压制成形的合金粉末用这些合金块粉碎,例如储氢和/或各种机械研磨方法(例如,使用圆盘磨机),并且获得的粗粉末(例如,平均粒度为10通过使用喷射磨机用干研磨方法研磨来获得μm至500μm。\n\n【0010】\n\n从磁性特性的观点来看,用于压制成形的R-Fe-B合金粉末的平均粒径优选为1.5μm至6μm。另外,除非另有说明,否则粉末的“平均粒径”是指本文的FSSS粒度。但是,如果以这种方式,平均粒径小的粉末,流动性和压制成形性(包括腔填充和可压缩性)差,并且生产率差。\n\n【0011】\n\n作为解决该问题的方法,已经研究了用润滑剂覆盖合金粉末颗粒的表面。例如,专利文献3和专利文献4包括润滑剂,其在润滑剂处具有至少一个脂肪酸酯的液化,其平均粒径为10μm至500μm,润滑剂具有至少一种脂肪酸酯的液化液。在质量%加成混合后,进行使用惰性气体的喷射研磨以提供R-Fe-B基合金的细粉(例如,平均粒径为1.5μm至5μm)。公开了。\n\n【0012】\n\n润滑剂改善了粉末的流动性和可成形性(可压缩性),并用作粘合剂,用于将固体(强度)施加到模塑体上,同时剩下烧结体中的剩余碳,并且仍然是剩余的碳。由于特征是造成的,需要优异的可屈服性。例如,专利文献5描述了抗聚合聚合物,溶液聚合物和烃溶剂的混合物,作为脱损性优异的润滑剂,以及聚合聚合物和低粘度矿物油和烃溶剂的混合物。公开。\n\n【0013】\n\n然而,根据使用上述润滑剂的方法,尽管获得了一些改进效果,但难以均匀地填充腔体,并且不能获得足够的可成形性。特别地,淬火方法如带钢铸造方法(冷却速度为102/ s到104在/秒中产生的粉末不仅小于由铸锭方法产生的粉末,而且粒度分布是尖锐的(尖锐),因此流动性特别差。因此,填充在腔中的粉末的量超出允许范围,并且腔内的填充密度是不均匀的。结果,模制体的质量和尺寸可以响起并导致模塑主体中的碎裂或破裂。\n\n【0014】\n\n尝试使用颗粒面粉作为另一种方法以改善R-Fe-B合金粉末的流动性和可成形性。\n\n【0015】\n\n例如,专利文献6在室温下在室温下加入0.4至4.0质量%,在捏合后通过造粒得到的粒状粉末,公开了通过使用可以改善可成形性。另外,还已知使用PVA(聚乙烯醇)作为造粒剂的方法。造粒剂还用作粘合剂,其赋予模塑体的强度以及润滑剂。\n\n【0016】\n\n然而,当使用专利文献6中公开的肉芽时,去结合性差,因此磁性通过烧结体中的碳降低。有问题。\n\n【0017】\n\n另外,由于相反,通过喷雾干燥方法制造的粒状粉末,所得到的粒状粉末是固体,因此得到的粒状粉末硬化,粒状粉末完全完全施加。不要崩解。因此,初级颗粒不能充分定向,结果,存在不能获得具有优异磁特性的磁体的问题。 PVA也很差,并且来自PVA的碳可能留在磁铁中。为了解决这个问题,还存在一种在氢气氛下进行脱抗器加工的方法,但难以充分去除碳。\n\n【0018】\n\n另外,为了解决造粒粉末难以通过定向磁场崩解的问题,我们提出了一种用磁场对准的单个颗粒(初级颗粒),其提出了一种产生由造粒机结合的造粒粉的方法(参见专利文献7)。当使用该粒状粉末时,磁性的对准得到改善,但是在压模时对准磁场对准,尽管磁特性得到了比使用粒状药物未结合的初级颗粒的提高。因为它很难,磁性性质低于使用非粒状稀土合金粉末的情况。\n\n【0019】\n\n专利文献1\n\n美国专利No.4,770,723\n\n专利文献2.\n\n美国专利No.4,792,368\n\n专利文献3.\n\n未审查 - 日本专利No.08-111308\n\n专利文献4.\n\n美国专利号5,666,635\n\n专利文献5.\n\nJP 2000-306753\n\n专利文献6.\n\nJP 63-237402\n\n专利文献7.\n\nJP-A-10-140202\n\n【0020】\n\n本发明要解决的问题\n\n如上所述,到目前为止已经研究了各种造粒和造粒方法,但是一种稀土合金,能够产生具有优异的流动性和压制成形性的磁体和具有工业上生产颗粒粉末的优异磁性方法的磁体。\n\n【0021】\n\n另一方面,越来越需要小型化,更薄和改善磁体,并开发一种能够产生具有高生产效率的小型或薄高性能磁体的制造方法。一般来说,\n\n当加工稀土合金烧结体(或磁铁磁铁)时,由于加工应变,磁性降低,但在小磁体中,在小磁体中不能忽略磁性的降低。因此,强烈希望产生具有最终形状的烧结体,其尺寸精度不需要基本上不作为小磁体的加工。此外,从这种背景下,对稀土合金粉末的需求优异的流动性和压制成形性,特别是对R-Fe-B合金粉末的需求变得越来越强。\n\n【0022】\n\n鉴于上述几点进行了本发明,以及用于制备优异的流动性和压制成形性的稀土合金的方法,并且可以制造具有优异磁性的磁体本发明的主要目的是提供一种具有高生产效率的高品质稀土合金烧结体的方法。\n\n【0023】\n\n[解决问题的手段]\n\n用于制备本发明的稀土合金的颗粒状面粉的方法是制备具有透气踏板的侧板上具有残余磁化的稀土合金的粉末的方法;产生第一气流的步骤流动从板下方到罐和(c)通过第一气体流动的粉末的颗粒,并通过粉末的残余磁化聚集的聚集在零磁场下基本上造粒和(d)第二气流朝向相对于基板的基板和(d)在罐中产生的过程和由粉末(e)制成的粉末层包括通过第二流形成粉末层的步骤,并且至少该方法(d)其特征在于同时执行部分和步骤(b)的至少一部分,这将实现上述目的通过该部分实现。\n\n【0024】\n\n在一个优选的实施方案中,用于同时执行步骤(d)和步骤(b)的时段包括在降低第一气流的流量的同时增加第二气体流量的流速的时段。\n\n【0025】\n\n步骤(a)通过将稀土合金的粉末放置在罐中的稀土化合物的粉末和不具有设置在罐中的残留磁化的粉末的粉末来赋予残留的磁化。它可以包括该步骤。或者,步骤(a)可包括预先制备具有残余磁化的稀土合金的粉末,以及将粉末布置在罐中具有残余磁化的过程。\n\n【0026】\n\n在一个优选的实施方案中,步骤(b),步骤(c),步骤(d)和步骤(e)以此顺序重复几次。\n\n【0027】\n\n在一个优选实施例中,在重复期间,在至少一个步骤(e)之后,使用第二气体流动暂时停止第一气流,然后通过第二气流停止,通过产生通过产生在板板上形成的粉末层流速的第一气流超过步骤(c)中的第一气流的平均流速。包括破碎的步骤。\n\n【0028】\n\n在一个优选的实施方案中,稀土合金是R-Fe-B基合金。\n\n【0029】\n\n在一个优选的实施方案中,粉末的平均粒度为1.5μm至6μm。\n\n【0030】\n\n在一个优选的实施方案中,产生0.05mm或更大和3.0mm或更小的平均粒度的粒状粉末。\n\n【0031】\n\n制备根据本发明的稀土合金烧结体的方法由任何上述稀土合金粒状粉末制成\n\n使用方法和填充含有谷粒面粉的稀土合金粉末的空腔的步骤生产颗粒面粉的方法,以及谷物面粉形成模塑主体的步骤和烧结模塑体的步骤通过在稀土合金粉末施加到包括稀土合金的稀土合金的粉末的状态下通过压模。\n\n【0032】\n\n根据本发明的稀土合金的颗粒粉末的制造装置连接到设置有稀土合金的粉末板的罐,以及从底板下方流动的第一气流从下方流动。一秒可以在罐中产生的流动路径和连接到罐的第二流动路径,以及从基板上方流入罐中的第二气流。第一流动路径和第二流动路径的特征在于罐是彼此独立连接,并通过上述目的实现。\n\n【0033】\n\n优选地,在第一流动路径中进一步提供温度接收装置和鼓风机。\n\n【0034】\n\n缓冲罐可以进一步设置在第二流动路径中。\n\n【0035】\n\n优选的是具有用于检测罐中气体的温度的控制电路,并且当检测到的温度超过预定温度时,至少控制电路用于停止鼓风机的操作。\n\n【0036】\n\n优选地,在操作期间,罐的内部保持在正压。\n\n【0037】\n\n能够将磁场施加到放置在侧板上的粉末的磁场产生装置还可包括磁场产生装置。\n\n【0038】\n\n发明内容\n\n在下文中,将参考附图描述根据本发明的实施方案的粒状粉末的制造方法和制造稀土合金烧结体的方法。在以下对实施例的描述中,本发明是通过使用R-Fe-B合金粉末制造烧结磁体的方法的示例来描述,该粉末在磁性特性中特别低,特别是低流动性,条带铸造方法。本发明的特征不限于此,可以使用其他方法产生的稀土合金粉末。\n\n【0039】\n\n根据本发明的实施方案的制备R-Fe-B合金烧结体的方法产生R-Fe-B基合金的粉末(下文中称为“原料粉”或“初级颗粒粉末”) 。通过使用原料粉末的残余磁化和含有粒状粉末的R-Fe-B合金粉末,将磁场应用于造粒的步骤和施加物质粉末和含有粒状粉末的R-Fe-B合金粉末的过程。一个通过压制成型在状态下形成模制体的步骤,以及烧结模制体的步骤。通过通过已知方法磁化所获得的烧结体,获得R-Fe-B基烧结磁体。可以在烧结之后的任何时间进行磁化过程,并且可以在烧结磁体的使用者之前立即执行。这里,未磁化的也称为烧结磁体。\n\n【0040】\n\n在根据本发明的实施方案的制造R-Fe-B基合金烧结体的方法中,使用原料粉末的残留磁化引起的粘合进行造粒。因此,可以使用比现有技术的较低添加量或低结合力的粘合剂的粘合剂。此外,可以省略添加造粒。\n\n【0041】\n\n参见图1和图2.如图1(a),(b)和(c),将描述根据本发明的实施方案的制备粒状粉末的方法和所得颗粒面粉的特性。图1的左侧是示意性地示出图1的粒状粉末和右侧的视图。图1示意性地示出了取向磁场在腔体中施加的颗粒状粉末的状态,以压制成形。它是一个数字。图。图1A显示了使用根据本发明的实施方案的造粒剂的常规粒状粉末12b和(c)已经描述于上述专利文献7中。\n\n示出了通过该方法获得的粒状粉末12c。\n\n【0042】\n\n如图1所示。如图1A所示,本实施例的粒状粉末12a被通过磁性内聚力具有残余磁化的主粒子10a弱耦合。这里,示出了未使用颗粒的情况。具有剩余磁化强度的主颗粒10a被磁耦合以形成磁闭电路,并且粒状粉末12a的残余磁化为轻微(例如,约0 mt或更小(Millitesla))。粒状粉末12a中的初级颗粒10a的残余磁化的方向与图1(c)所示的粒状粉末12c不同,并且随机地面对。例如,初级颗粒10a的平均粒径为1.5μm以上且6.0μm以下,粒状粉末12a的平均粒径为约0.05mm至3.0mm。可以通过将高斯仪表的探针插入粒状粉末来测量残余磁化。\n\n【0043】\n\n由于粒状粉末12a具有中等的粒度,因此流动性优异,并且残余磁化也很低,使得腔容易填充腔,而不会引起桥接。此外,由于初级颗粒10a仅被磁性粘性力耦合,如图2的左侧所示。如图1(a)所示,通过施加定向磁场(例如,0.1t至0.8 t,可靠地可靠地)。颗粒10a塌缩和主颗粒10a对齐。另外,由于含有颗粒,所以烧结体的碳含量不会增加。通过使用粒状粉末12a制造的烧结体而获得的磁体基本上用作原料粉末(基本上为零的残余磁化)。具有相同的磁性。也就是说,通过使用本发明的实施方案的粒状粉末,可以提高流动性和可成形性而不降低磁性。当然,可以添加造粒剂以提高模塑体的强度。由于造粒剂用作辅助辅助的,因此不需要强键合力,并且可以选择量和类型,以便不降低磁特性。\n\n【0044】\n\n另一方面,如图2所示。如图1(b)所示,通过造粒14键合的原料粉末的初级粒子10b的粒状粉末12b不充分破坏定向磁场,并且因此,结果是获得的。烧结磁体的磁性降低。例如,与没有造粒的未使用原料粉末的情况相比,残留磁化减小约为约1%至10%。另外,由于图1的粒状粉末12b中的主颗粒10b。如图1(b)所示,所以图1(b)的颗粒状粉末12b没有残余磁化,因此未描述箭头。\n\n【0045】\n\n此外,如图2所示。如图1c所示,当初级颗粒10c对准时,当初级颗粒10c附着并固定初级颗粒10c时,使用磁性粉末12c,尽管粒状粉末12c减小例如,与没有造粒的原材料粉末的情况相比,残留磁化为剩余磁化的剩余磁化为约1%至若干%。下降。此外,如图2中示意性所示。如图1C所示,粒状粉末12c沿磁极的方向变为细长形状,从流动性的观点来看,缺点是不利的。此外,由于粒状粉末12c具有相对大的剩余磁化,除非退磁(退磁),除非它不能填充腔,因为它导致桥接。\n\n【0046】\n\n另一方面,由于根据本发明的实施例的粒状粉末12a靠近球形,并且残余磁化为小,因此不能需要退磁,并且可以容易地均匀地填充腔。因此,可以采用所谓的称重填充方法,其经受预定的质量粒状粉末,然后填充在腔体中。如上所述,本发明实施方案的粒状粉末12a可以制造烧结磁体,其具有优异的流动性和填充性与腔体具有优异的并且基本上没有磁性降低。\n\n【0047】\n\n通过造粒方法获得本发明的实施方案的颗粒状粉末,该造粒方法包括将动能给出具有残余磁化的原料粉末的颗粒的方法,通过给出的动能通过滚动作用生长。而且,可以根据需要加入造粒剂。\n\n【0048】\n\n在根据本发明的实施方案的制造粒状粉末的方法中,在填充原料粉末(造粒罐)之前,可以进行将残留磁化施加到原料粉末的过程,或者可以在装载后进行罐进去。然而,由于粒状粉末12a的初级粒子10a通过由于残余磁化而通过磁性粘结而粘合,因此当从外部施加磁场时造粒粉末12a塌陷。因此,颗粒的生长过程基本上在零磁场下进行。这是制造图1所示的粒状粉末12c的方法。如图1(c)所示,其中施加磁场以定向初级颗粒10c直到造粒机14最终固定粒状粉末12。与造粒机14相反需要继续。在本说明书中的“基本零磁场”中,通过滚动作用在生长颗粒的过程中,可以获得通过粉末的残余磁化形成磁闭电路的造粒粉末的程度。a弱磁场不会影响残余磁化。\n\n【0049】\n\n可以使用各种磁场用于施加赋予剩余磁化的磁场。由于初级颗粒的残余磁化可能很小,因此优选使用交替阻尼磁场。用于施加残余磁化的磁场不限于交替阻尼磁场,并且可以使用单调的衰减磁场或另一脉冲磁场或静态磁场。\n\n【0050】\n\n如果原料粉末的矫顽力也很小,即使施加残留磁化,也可以将其脱磁,直到获得最终的粒状粉末,并且不能保持粒状面粉的形状。因此,优选的是,原料粉末的矫顽力相对较高。具体地,原料粉末在堆积密度为2.0g / cm3当通过BH示踪剂测量的矫顽力的值填充在容器中以便是,原料粉末优选具有70ka / m或更大的矫顽力,并且更优选地具有80ka / m,其具有上述矫顽力。例如,在R-Fe-B基合金的情况下,含有1质量%以上或Tb的合金为2质量%以上,或1质量%或更高,1质量%或者更优选。\n\n【0051】\n\n作为用于压模的R-Fe-B基合金的粉末,优选仅使用如上所述制备的粒状粉末,但从流动性和成形性的观点来看,原料粉末(原颗粒粉末也可以混合和使用。然而,由于当原料粉末的速率增加时,流动性降低,因此优选仅使用粒状粉末,以便通过造粒充分地获得流动性改善效果。另外,当将粒状粉末混合使用原料粉末时,优选将颗粒表面涂有润滑剂。通过用润滑剂涂覆初级颗粒的表面,可以提高R-Fe-B粉末的流动性,并且可以防止R-Fe-B基合金的氧化。而且,磁场压制过程中的取向也得到改善。在本说明书中,粉末(其可含有表面上的氧化物层)基本上仅在基本上稀土合金中,而且还含有用于压制成形的粉末,该粉末包括粒化剂或润滑剂以及稀土合金粉末。而且,它将被称为稀土合金粉末。\n\n【0052】\n\n使用根据实施例的使用R-Fe-B合金烧结体制造磁体的方法是按步骤的顺序描述的。\n\n【0053】\n\n首先,使用条带铸造方法生产R-Fe-B基合金薄片(例如,参见,例如,美国专利号5,383,978)。具体地,通过高频溶解,通过已知方法生产的R-Fe-B基合金用作熔融金属。作为R-Fe-B基合金,例如,在美国专利No.4,522,517中描述的规范中描述的那些。No.4,770,723和4,792,368可以适当使用。在R-Fe-B基稀土合金的典型组合物中,Nd或Pr主要用作R,并且可以部分地由过渡元件(例如CO)部分地替换,B是C.它可以被替换。\n\n【0054】\n\n在1350℃下握住该合金的熔融金属后,辊周长约为1m / s,冷却速度为500℃/秒,在过冷的条件下在单个卷上淬火冷却速率,厚度为0.3毫米是合金薄片。得到。通过在该合金薄片和脆化中吸收氢来获得合金粗粉。通过使用喷射磨机装置在氮气气氛中粉碎该合金粗粉末,例如,平均粒径为1.5μm至6μm,并且通过BET方法的比表面积为约0.45μm。2/ g至约0.55米2获得/ g的合金粉末(原料粉末)。该原料粉末的真实密度为7.5克/厘米3它是。\n\n【0055】\n\n接下来,将残余磁化施加到所得原料粉末中。这里,施加具有1.0 t的峰值磁场的交替衰减磁场。\n\n【0056】\n\n接下来,造粒具有残余磁化的原料粉末。这里,使用流化床造粒方法。使用流化床造粒方法,可以获得具有闭合球形的造粒面粉,可以获得适度固体的粒状粉末。当粒状粉末具有靠近球形的形状时,其流动性和成形性具有优异的。此外,粒状面粉的固体也经历了造粒剂的影响,但即使它太软而如上所述,即使它太软而也发生缺点。\n\n【0057】\n\n在传统的流化罐造粒方法中,通过气流(流动过程)从底部到顶部流动的气流和从上方流动的气流流动的粉末流动(也称为“整流”。压缩a的步骤粉末层(紧凑的过程)独立进行。例如,在专利No.3019953(例如,图3)中描述的流量压缩装置中,执行用于执行流程处理的气体流动(“第一气体流动”,并且执行紧凑的工艺。气流(“第二气流”制作它。)正在切换,并且在罐中不能产生气体流动。\n\n【0058】\n\n由于各种实验的结果,由于进行了各种实验,稀土合金的粒状粉末更像是它可以有效地制造。\n\n【0059】\n\n这是稀土合金7.5克/厘米。3它被认为使用具有大和/或残余磁化的相对较弱的力产生粒状面粉。这不使用粘合剂,但是,如果第一气体流量和罐中的第二气流共存,除非进行整合过程,否则颗粒面粉的制造产率降低。在使用粘合剂的情况下,它是基于没有证实与常规方法的显性差异的实验事实。然而,由于第一气流和第二气流的共存,提高粒状面粉的制造效率的原因是不公知的。\n\n【0060】\n\n将参照图1和图2详细描述根据本发明的实施例的粒状粉末的方法和制造装置。2和3。\n\n【0061】\n\n图。图2是示意性地示出适用于制造根据本发明的实施例的粒状粉末制造装置100的结构的视图,以及图3(a)和(b)是一种显示的图通常在根据本发明的实施方案的粒状粉末制造方法中的罐中的状态(流速的时间变化)。\n\n【0062】\n\n图2中所示的粒状粉末的制造装置100包括:图2是可以产生从底部到罐10的罐(流动罐)10和流动的第一气流并在罐10中产生的第一流动路径。如图20(a)和第二流动路径30(b)能够产生从罐10连接到罐10的第二气流,第一流动路径20(a)和第二流动路径30(b)相对于罐10彼此独立地连接。附图标记20和30是第一流动路径中的每一个\n\n当参考构成第二流动路径的物理结构时,参考标号A和B主要用于分别指向第一和第二流动路径中的气体流动的路径。\n\n【0063】\n\n罐10具有用于在其底部地接收填充有稀土合金粉末的容器42的结构。容器42的底板42b是透气的,并且可以例如由网络或布形成。从可加工性的观点来看,优选使用如上所述的容器42,但是只要罐10具有透气底板,它可以具有另一个结构。\n\n【0064】\n\n安装在容器42的底板42b上的稀土合金的粉末被给予动能,并通过从底部到底板42b流动的第一气流流化。此时,通过使用稀土合金的粉末的残余磁化和通过第一气流施加到粉末的动能的滚动效应,通过使用由于覆盖的粘合而在零磁场下进行造粒过程。。另外,通过重量的重量和/或第二气体流动在底板42b上形成粉末层,并且通过通过第二流压缩粉末层来执行压缩过程。\n\n【0065】\n\n第一流动通道20具有加热装置22,鼓风机(例如,鼓风机鼓风机)24和管道26,并且通过阀27和28连接到罐10,并且罐10中的气体第一流动路径A被循环(参见图2中的箭头A1和A2)。为了抑制稀土合金粉末的氧化,优选使用惰性气体(惰性气体或氮气),并且这里使用氮气。另外,优选控制气体中含量的氧气的体积分数至0.1%或更低。\n\n【0066】\n\n另外,当稀土合金的粉末的温度过高时,胁迫降低,粉末的内聚力降低,并且由于颗粒状粉末难以形成和/或粉末的氧化抑制稀土合金。为了将气体的温度控制成10℃或更高且40℃或更低的范围内,更优选在20℃或更高的范围内控制和30°C.或更少。当然,如果需要,可以提供湿度控制装置以从气体中去除水分。\n\n【0067】\n\n鼓风机24通过加热装置22产生使用温度控制气体的第一气流。通过调节鼓风机24的输出和/或阀27的开度来执行在罐10中产生的第一气流的流速。\n\n【0068】\n\n第二流动路径30具有缓冲罐32和管36,并且通过阀37和38连接到罐10,并形成第二流动路径b,第二流动路径B将气体循环在罐10中是(参见箭头B1和B2在图2中。2)。缓冲罐32经由调节器33连接到源极管(例如,工厂氮气管)34。提供给源管道34的氮气的压力例如约7kg / cm2和稳压器33的几千克/厘米2它被踩下了。通过调节阀37和38的开度来执行在罐10中产生的第二气流的流速。\n\n【0069】\n\n第一流动路径20和第二流动路径30的两端连接到罐10,气体流动路径基本上紧密。因此,可以有效地控制罐10中的氮气中的氮气的状态(温度,湿度),并且可以降低氮气的消耗量。然而,假设气流难以调节气流,排气管44通过阀46连接到罐10,并且应采用该构造来利用预定电阻的罐10中的氮气排出氮气首选。此时,优选的是调节排气管44的电阻,使得至少罐10中的压力保持高于罐10外部的大气的压力(大气压)。\n\n【0070】\n\n此外,由于稀土合金的粉末可能被氧化,因此当温度异常时爆炸的危险。\n\n有。因此,提供了用于检测罐10中的温度的温度计18,并且当罐10中的温度超过预定温度时,可以提供一种控制电路,该控制电路至少停止鼓风机24的操作。当然,阀27,28,37,38和46可以由电磁阀构成,并且如果它们超过预定温度,则可以控制它们以关闭它们。从各种经验中,当使用R-Fe-B基合金时,如果超过50°C,则可能导致快速氧化(有时受累或爆炸),因此开始上述停止操作。它是优选的将温度设置为50.degree。\n\n【0071】\n\n另外,内径在底部中的底部不同,该容器42接收附近的容器42,附近,位于这些顶部的附近。如图1所示。如图2所示,罐10的底部的内径D1小于躯干部分的内径D2,并且高度越大,大于内径D2的越大。当使用这种结构的罐10时,在罐10中产生的第一流量流速减小到上侧,使得在罐10中产生的第一流的流速降低,因此它浮动第一流动粉末可以有效地掉落。内径小于主体部分的内径D2的底部的长度(高度)例如,例如罐10的整个长度的约20%,以及内径D1的最小值在底部(底板42b定位的部分)的内径例如为D2的约50%。\n\n【0072】\n\n粒状粉末制造装置100还包括能够将磁场施加到填充在容器42中的稀土合金的粉末的磁场发生装置40。磁场产生装置40例如是具有线圈和轭的电磁体,并且可以产生交替的衰减磁场。当然,在使用稀土合金的粉末的情况下,可以省略磁场产生装置40。\n\n【0073】\n\n接下来,参考图1和图2.参照图3A和3B,将描述在本发明的实施例中的粒状粉末的制造方法中的罐10中的流动状态。图。图3A示出了从操作开始的一系列步骤(一个循环)。图3(b)示出了包括破碎步骤的一系列步骤(一个循环)。\n\n【0074】\n\n首先,参考图1.如图3A所示,在填充有残余磁化的稀土合金粉末的容器42填充具有残余磁化的容器42之后的罐10中的流动的状态被设定在装置100的预定位置。\n\n【0075】\n\n在设置容器42之后,立即设置第一流动的流速a0和第二流动B的流速0一切都是零。启动温度控制装置22和鼓风机24的操作,并且阀27和28打开以在罐10中产生第一流动。第一流动的流速逐渐上升,以及稳态a的流速1抵达。在这种状态下,由于在罐10中轧制而导致的剩余磁化引起的粉末造粒。在此期间,在罐10的中心附近存在的粉末(包括造粒过程中的颗粒)在浮动的同时浮动,并且弱速度10的内壁附近的粉末是由于其自身重量落下。\n\n【0076】\n\n利用第一流动的流速在预定时间(例如,约20分钟)的基本恒定,阀37和38打开并且开始产生第二流B的产生(在起始点B1处的流速) 。第二流动B的流速逐渐增加和稳定流速B2在达到流速之前降低第一浇注的流速2)。也就是说,第二流动B的流速增加的时段,同时降低了第一流动的流速(图3A中的A)的流速2〜B.2有一个时期对应如上所述,存在第一流动A和第二流动B同时存在于罐10中的时段,稀土合金的粒状粉末可以更有效地制造。虽然这个原因并不总是清楚的,但是如果第一流动A的流速太大,则第一流动突然停止或者第二流动B的流速太大,并且颗粒状粉末落入,认为粒状粉末被撞击破坏。另外,当第一流动A完全停止时,开始产生第二流动B的产生,罐10的内部变为负压,并且压力控制变得困难,因此优选优选。\n\n胃。\n\n【0077】\n\n如上所述,当逐渐增加第二流动B的流速而逐渐增加第一流动A的流速时,当粒状粉末落在底板42b上时,粒状粉末不会被撞击破坏。粉末层形成,然后由第二流动B压缩以整合粉末层。该固结过程增加了粒状面粉的固体。\n\n【0078】\n\n通过重复图3中所示的循环。如图3A所示,可以获得适量固体的颗粒状面粉。然而,如图3(a)所示,第二和后续循环开始处的第一流动A的流速为零为零。0永远不需要,并且图3A所示的循环的流速A的流速A. 3A3也许。\n\n【0079】\n\n通过重复图3中所示的循环。如图3A所示,在底板42b上压缩的粉末层不能充分压碎,并且可以产生粗糙的大颗粒。因此,为了更可靠地使粉末层更可靠地制造粉末层,如图2所示的循环。优选地进行图3B。\n\n【0080】\n\n图3中的POINT B(b)1它将是从“之后的步骤”中的描述。这里,图3中的点B. 3(b)1\'到图3中的b(a)1在执行过程中,然后执行图3B的过程。将描述图3B的过程。\n\n【0081】\n\n以与上述相同的方式,第二流B的产生(启动时的流量1\'),第二流动B的流速是稳态流b2在达到之前,开始减小第一流动的流量A(减小的流量开始a2\')。此后,阀27和28关闭,并且第一流动A停止(图3中的点A)3\'〜点4\':α分钟)。在此期间,当操作鼓风机24时,管26中的气体压力从鼓风机24到阀27增加。相反,阀27关闭,直到获得用于破碎粉末层的预定压力。之后,阀37和38关闭,第二流动B停止(图3中的点B(b)0除了阀27和28之外,阀27和28打开,并产生第一流动A(图3中的点A. 3(b)0\')。此时,在罐10a中产生的第一流动的流速0\'图3A中的稳定第一气流A的流速A的流速A1(= A.2它变为超过的流速超过),并且可以有效地压碎粉末层。用于获得轧制动作的第一流动A的流速通常几乎恒定,如图3(a)(a)(a)1= A.2坚持,但可能有所不同。在这种情况下,优选的是,用于压碎粉末层的第一流动A的流速大于用于获得轧制动作的第一流动A的平均流速。\n\n【0082】\n\n在上面的例子中,通过操作阀37和38转移A.0生成\'的第一流动A,但是可以通过控制鼓风机24的吹风容量来调节第一流动A的流速,或者可以与阀操作组合。另外,图3中的流速A. 3(b)1\'流量a2\'图3(a)的流速A分别1和流量a2可能是一样的。\n\n【0083】\n\n由于使用残余磁化形成的粒状粉末是一定较高的,因此形成磁闭电路,因此作用在粒状粉末之间的磁吸力变弱,图3(b)所示,图3(b)所示,图3(b)所示,不需要粉碎循环。因此,例如,在通过重复图3中所示的基本循环获得预定造粒粉末的过程中,如图3A所示的碎片循环。3(b)30次。在前20个循环中,优选包括破碎循环5到10次。\n\n【0084】\n\n另外,当使用具有残留磁化的原料粉末时,在较短的时间(例如,大约一半)中获得所需的造粒面粉,而不是使用没有残留磁化强化的原料粉末的情况。这使用具有残留磁化的原材料粉末,并且用于生产造粒粉末的核是由于初级颗粒之间的磁性内核\n\n推测它很容易产生。\n\n【0085】\n\n粒状面粉的平均粒径优选在0.05mm至3.0mm的范围内。通常,由于粒状粉末中含有的初级颗粒是轻微的,并且第三颗粒上方的高阶粒状粉末也非常小,所以二次颗粒的平均粒度基本上是粒状粉末的平均粒度被视为粒径的代表。这里,随着粒状粉末的平均粒径,使用通过微观观察获得的二次粒子的平均粒径。如果粒状面粉的平均粒径小于0.05mm,则难以在液体的低改善程度和充分的密度下获得均匀的模塑体。另一方面,如果粒状面粉的平均粒径大于3mm,则腔体的填充性降低,并且难以以足够的密度获得均匀的模制体。进一步优选的是,粒状面粉的平均粒径在0.1mm至2.0mm的范围内。\n\n【0086】\n\n接下来,通过压制所获得的造粒粉末形成模制体。这里,仅使用粒状粉末来形成模塑体。已知的压制成形装置可用于压模,并且通常使用用于在模腔(管孔)中压制粉末的单轴压制成形装置。例如,通过用填充或流动在高空气密封容器中流动的氮气进行颗粒状粉末的转移。\n\n【0087】\n\n将粒状面粉填充在单轴压制成型机的模腔中。将空腔填充到腔中的步骤是,例如,使用筛子的填充方法,日本专利公开No.59-40560,JP-A-10-58198和日本专利申请公开号63-110521和JP-A-2000-可以使用在248301号公开中公开的使用馈线的填充方法使用填充方法(共同为“丢弃方法”)来执行。\n\n【0088】\n\n特别地,当形成小的模塑体时,优选使用腔体测量对应于腔的内部体积的粒状粉末的量。例如,在移动具有开口的馈送器箱上以向下移动到腔体并抓取造粒的面粉之后,通过将供应到腔的剩余粒状粉末释放到腔体中相对均匀。可以用预定量的粒状粉末填充。当然,单独称量的粒状粉末可以使用漏斗等填充到腔中。\n\n【0089】\n\n在腔内填充颗粒状粉末后,降低了单轴压制装置的上冲头,并将对准磁场施加到腔的开口,并且粒状粉末被破坏到初级颗粒,1个下一个颗粒中断是对齐的。根据本发明的实施方案的粒状粉末可靠地塌陷到初级颗粒,磁场为0.1t至0.8t。然而,考虑到足够的取向度,期望约0.5t至1.5t。磁场的方向是例如具有压力方向的垂直方向。在以这种方式施加磁场的同时,例如,在98MPa的压力下,粉末是用垂直冲头按压的第一轴。结果,可以获得具有相对密度(模制体密度/真密度)的复合材料是0.5至0.7。根据需要,磁场的方向可以平行于压力方向。\n\n【0090】\n\n接下来,将所得成型体烧结在真空或惰性气体气氛中,例如在约1000℃至约1180℃的温度下约1小时至6小时。由于本实施方案的颗粒状粉末仅含有不含造粒剂的造粒剂,或者可以在烧结步骤中基本上除去,因此不需要分开分离脱抗器过程。此外,在约200℃至800℃的温度下,在约2Pa的惰性气体气氛下,在约2Pa的惰性气体气氛下进行常规典型的典型缺乏装置。在约2pa至800℃的温度下进行约3小时至约6小时。\n\n【0091】\n\n将所得烧结体在约450℃至约800℃的温度下老化约1小时至8小时以获得R-Fe-B基烧结磁体。此后,在任何阶段,最终完成磁化磁化。\n\n【0092】\n\n根据本发明,如上所述,使用流动性和可成形性优异的造粒粉末,使得填充量的变化小并且均匀地填充在腔中。因此,通过压制成形获得的模塑体的质量和尺寸几乎没有变化。另外,模塑体也缺乏碎裂或裂化。\n\n【0093】\n\n此外,由于本实施例的粒状粉末的初级颗粒基本上通过残余磁化的磁性粘性力基本上耦合,因此取向磁场的施加可靠地塌陷一次颗粒。因此,初级粒子的取向程度不会降低。另外,由于由于造粒剂的剩余碳而导致的磁性降低最小化,因此可以获得具有优异磁特性的烧结磁体。因此,根据本发明,高质量的R-Fe-B合金烧结磁铁可以以高生产效率制造。\n\n【0094】\n\n【例子】\n\n在下文中,将描述本发明的示例。\n\n【0095】\n\nR-Fe-B合金粉末如下制备。作为原料,使用含有99.9%的电解铁的融合物合金制备合金熔融金属,纯度为99.9%,19.8%的纯净。从合金熔融金属,30.0质量%的Nd,5.0重量%,64.0重量%Fe,14.0重量%Fe,1.0重量%B的R-Fe-B合金。使用喷射磨机,惰性气体(例如,2铣削气体,气体压力58.8MPa,得到一个平均粒径为约3μm的原料粉末。\n\n【0096】\n\n接下来,将交替的衰减磁场(峰值磁场1.0t)施加到原料粉末中,以赋予剩余磁化。\n\n【0097】\n\n接下来,使用上述制造装置100制造粒状粉末。\n\n【0098】\n\n罐10的内径(D2)为300mm,并且体积约为7×104厘米3,图3(a)和(b)中的流速A.1= A.2= A.1\'= A.2\'约1米3/ min,流速a0\'约2.0米3/ min,流速b2= B.3= B.2\'= B.3\'约0.75米3/ min。稀土合金的原料粉末的输入量为约5kg,氮气的温度控制在约30℃。\n\n【0099】\n\n此外,本申请申请人的日本专利申请No.2001-96572中所述的聚丁烯和异戊二烷烃作为制造实施例2至3和比较例2和3的制造制粒剂的制粒剂。\n\n【0100】\n\n在任何一个实施例和比较例中,设定了条件,使得造粒面粉的平均粒径为0.5mm。所得造粒粉末的残余磁化为约0.2mt。实施例1至3的造粒步骤约为15分钟,比较例2和3的造粒过程约30分钟。使用比较例1而不造粒原料粉末(磁场的施加)。压粉的制备条件在第一至第三和比较例1至3中的每一个中的表1中总结。\n\n【0101】\n\n【表格1】\n\n\n\n【0102】\n\n此外,表1显示了每个压力机的粉末的异常角度。具有大储存器的粉末差,流动性更好,因为角度较小。如对比例1所示,如果原材料粉末未造粒,则飞溅角约为52°,并且流动性低。另一方面,实施例1至3的任何压粉,比较例2和3,其中进行粒化也将呼吸角降低至小于50°。特别地,实施例1和2的压制粉末是压粉(加入1质量%的造粒剂的造粒剂的1质量%),流动性优异。也就是说,通过使用残余磁化,可以看出通过添加少于常规造粒的流动性得到改善。在制粒剂的添加量的2质量%的实施例3中,在实施例3和比较例3中观察到流动性差异。\n\n【0103】\n\n表1中所示的每个压模的粉末填充在20mm长,15mm宽,10mm深的腔内,和单轴压制成形(98MPa,定向磁场(0.8吨)。在压力机中适用于直角方向)。该填充步骤和压制成型步骤在所有实施例和比较例的相同条件下进行。另外,形成改变压力条件和不同模塑体密度(绿色密度)的模制体。\n\n【0104】\n\n评估实施例1和比较例1的压模体的质量变化(%)和填充量变化(σ)。通过((最大质量 - 最小质量)/平均质量(n = 50)}×100(%)确定模塑体的重量变化。此外,填充量变化(σ)表示50模制件的质量分布的标准偏差。实施例1的模塑体的质量变化约为4%,并且与比较例1的大约15%质量变化相比显着改善。这类似于填充量变化(σ),比较例1的填充量变化(σ)为约0.33,而实施例1的填充量变化(σ)显着改善0.16。可以看出流动性通过造粒改善。当然,与比较例1相比,可成形性和造粒和造粒和造粒显着发生显着发生。还证实了这些颗粒的效果用于其他实施方案。\n\n【0105】\n\n将得到的模塑体在Ar气氛中在1060℃下烧结约4小时,在600℃下在600℃下烧结1小时以获得烧结体。此外,通过在2387ka / m的条件下磁化该烧结体来获得烧结磁体。对于每个实施例和比较例,样品的数量为50。\n\n【0106】\n\n所得烧结磁体的残余磁化Br(t)如图1所示。从图1中可以看出。如图4所示,实施例1的BR(图4中的黑色圆圈)与比较例1的BR基本上不同(图4中的白色圆圈),具有优异的磁性特性。实施例2和添加造粒的实施例3的Br是\n\n使用没有残留磁化的原料粉末加入并与比较例2和比较例3的比较例2和比较例3的相同量的制粒剂。即使在使用残余磁化的颗粒的情况下,造粒剂也优选尽可能小。\n\n【0107】\n\n如上所述,通过通过初级颗粒的残余磁化制备颗粒面粉,与仅使用造粒剂的结合力使用造粒面粉的情况进行比较,因为即使造粒剂的流动性也可以减少可以等于或更高的添加量的添加量,可以制造具有优异的磁性特性的烧结磁体。可以制造优于传统的磁性的磁体。此外,如果仅使用初级颗粒的残留磁化制备粒状粉末,则可以基本上消除磁性降低。\n\n【0108】\n\n【发明效果】\n\n根据本发明,提供了一种制备稀土合金颗粒粉末的方法,其流动性和压制成形性优异,并且可以制造具有优异磁性的磁体。通过使用该粒状粉末,提供了一种用于生产高质量稀土合金烧结体,具有高生产效率的方法。\n\n【0109】\n\n根据本发明,由于可以改善稀土合金粉末的流动性和可成形性而不降低磁性,因此可以改善具有磁性磁特性的磁性磁性磁性的压制成形难以的成形烧结磁体。此外,可以缩短造粒时间并省略Demoid装置的过程,并提高稀土烧结磁体的生产率。\n\n[简要描述;简介]\n\n【图1】(a)是示意性地表示本发明的实施方式的粒状粉末的结构,(b)和(c)示意性地显示出用于比较的常规粒状粉末的结构。\n\n【图2】图3是示意性地示出了用于通过本发明的实施方式的用于制造R-Fe-B合金造粒粉的造粒装置100。\n\n图3.(a)和(b)是根据本发明的实施方案的粒状粉末制造方法中的罐中的罐中的状态(流速的时间变化)的曲线图。\n\n图4.图3是表示使用比较例的造粒粉末使用本发明的上述发明实施方案的造粒粉末获得的烧结磁体的残留磁通密度Br的曲线图。\n\n[标志的说明]\n\n10a,10b,10c主粒子\n\n20A,20B,20C粒状粉末\n\n10个坦克(流体罐)\n\n第一个第1频道\n\n22温度传感器\n\n24个鼓风机\n\n26,36管道\n\n27,28阀门\n\n第30次第二频道\n\n37,38阀门\n\n40磁场发电机\n\n42个容器\n\n42B底板\n\n44排气管道\n\n46阀门');
INSERT INTO `os_patent_instruction_text` VALUES (12957, 22786, 'BACKGROUND OF THE INVENTION\n\n[0001]The present invention relates to a method of cutting with a wire saw, a wire saw machine and a method for producing rare-earth magnets.\n\nDESCRIPTION OF THE RELATED ART\n\n[0002]A rare-earth alloy is used as a material to make a strong magnet. A rare-earth magnet, obtained by magnetizing a rare-earth alloy, can be used effectively as a magnet for a voice coil motor, which is used to position a magnetic head in a magnetic recorder, for example.\n\n[0003]In the prior art, an ingot (or a sintered body) of a rare-earth alloy is often cut by a technique of slicing the ingot with a rotating slicing blade, for example. In this slicing blade cutting process, however, the cutting edge is relatively thick, thus requiring a lot of machining allowance. As a result, the yield of the rare-earth alloy material is so low as to increase the cost of resultant rare-earth alloy products (e.g., rare-earth magnets).\n\n[0004]A wire cutting process is known as a cutting method that requires smaller machining allowance than the slicing blade cutting process does. For example, Japanese Laid-Open Publication No. 11-198020 discloses that a hard and brittle material such as silicon, sapphire, quartz, glass, neodymium or ferrite may be cut with a wire, which is obtained by fixing superabrasive grains on the outer surface of a high-hardness core wire with a bonding layer (which is sometimes called a “fixed abrasive wire”).\n\n[0005]If a number of plates with a predetermined thickness can be obtained at the same time by cutting a rare-earth alloy ingot with such a fixed abrasive wire with small machining allowance, then the manufacturing cost of rare-earth magnets can be reduced significantly. However, nobody has ever reported that a rare-earth alloy could be cut successfully with such a fixed abrasive wire at a mass-producible level.\n\n[0006]The present inventors carried out extensive researches on this phenomenon and spotted the major cause of this problem in a significant difference in mechanical property between a rare-earth alloy produced by a sintering process (which will be referred to herein as a “rare-earth sintered alloy”) and silicon, for example. More specifically, a rare-earth sintered alloy includes a hard main phase (R2Fe14B phase) that mainly causes brittle fracture and a grain boundary phase (R-rich phase) that causes ductile fracture. Accordingly, unlike a hard and brittle material such as silicon, the rare-earth sintered alloy is not so easy to cut. That is to say, compared with cutting silicon or any other hard and brittle material, higher cutting resistance is produced and a huge quantity of heat is generated, too. Also, the specific gravity of a rare-earth alloy is approximately 7.5, which is much higher than that of silicon or any other hard and brittle material. For that reason, cutting debris (or sludge), produced by the machining process, cannot be easily flushed away from the machined portion.\n\n[0007]Thus, to cut a rare-earth alloy with high machining accuracy and efficiency, it is necessary to not only decrease the cutting resistance sufficiently but also efficiently dissipate the heat to be generated during the cutting process i.e., efficiently cool the machined portion). Furthermore, it is also necessary to efficiently flush away the cutting debris produced by the cutting process.\n\n[0008]By supplying the rare-earth alloy machined portion with plenty of highly lubricant coolant (which will also be referred to herein as a “cutting fluid”), the cutting resistance can be decreased and the heat to be generated during the cutting process can be dissipated efficiently. The present inventors discovered and confirmed via experiments that if a wire is wet with a sufficient amount of an oil coolant, then the traveling wire can supply a narrow machined portion with plenty of that coolant.\n\n[0009]When such an oil coolant is used, however, it takes a lot of costs to process its waste so as not to create any environmental damage and it is difficult to recycle the waste or cutting debris because the cutting debris is hard to sort out from the waste. Also, if the cutting debris of the rare-earth alloy is recycled, then the amount of carbon included in the material will increase to deteriorate the magnetic properties unintentionally. In view of these considerations, water (or an aqueous coolant) is preferably used as the coolant. However, if water is used as a coolant, then it is impossible to keep a sufficient amount of water deposited on the traveling wire because water has low viscosity (with a kinematic viscosity of 1.0 mm2/s). As a result, even if the wire was wet with water, a sufficient amount of water could not be supplied to the machined portion.\n\n[0010]Japanese Laid-Open Publication No. 11-198020 discloses that by moving the wire through a coolant overflowing from a coolant vessel, the coolant can be kept deposited on the wire just as intended even in a situation where a fixed abrasive wire needs to travel at a high velocity (e.g., at 2,000 m/min). However, the present inventors discovered via experiments that even when a rare-earth alloy was cut with a wire traveling through such overflowing water (as disclosed in Japanese Laid-Open Publication No. 11-198020, for example), the abrasive grains still dropped or the wire snapped in a worst-case scenario. These inconveniences also happened even when the wire traveled at a velocity of about 800 m/min. This is believed to be because even if the above method is adopted, the cutting resistance is still high and water still cannot be supplied to the machined portion sufficiently.\n\n[0011]As a result of various experiments, the present inventors discovered that the wire could be cooled efficiently by supplying the machined portion with a coolant mainly composed of water having a surface tension of 25 mN/m to 60 mN/m (or a kinetic friction coefficient of 0.1 to 0.3) at 25° C. (see Japanese Patent Applications Nos. 2000-358462 and 2001-318867). A coolant with a surface tension or a kinetic friction coefficient falling within the above range exhibits higher wettability (or conformability) with the rare-earth alloy and/or the wire than water. Thus, it is believed that the coolant can efficiently penetrate the machined portion (i.e., the region where the rare-earth alloy and the wire contact with each other and the rare-earth alloy is cut and which will also be referred to herein as a “cutting groove”). Naturally, the coolant mainly composed of water has higher specific heat, and therefore results in higher cooling efficiency, than an oil coolant (e.g., mineral oil). As used herein, the “coolant mainly composed of water” refers to a coolant, at least 70 wt % of which is water.\n\n[0012]However, as a result of further researches, the present inventors discovered that when such a coolant mainly composed of water was used, the abrasive grains came off the wire at a reel bobbin, in which the wire was reeled up, due to some friction of contact between portions of the wire. Such a phenomenon will sometimes be referred to herein as “grain drop-off”.\n\n[0013]The present inventors discovered that this phenomenon occurred for the following reasons. Specifically, the coolant mainly composed of water shows lower adhesion to the wire, and higher vaporizability, than an oil coolant. Accordingly, when the wire is reeled up in the reel bobbin, almost no coolant is left on the wire if any, and therefore, cannot reduce the heat or mechanical friction generated due to the friction of contact between the wire portions. That is to say, this situation is probably brought about because the coolant should reach the wire in the machined portion but be scattered away on the way, i.e., by the time the wire is reeled up in the reel bobbin.\n\n[0014]Furthermore, even if the abrasive grains do not come off the wire, the friction caused between those portions of the wire always does some mechanical damage on the abrasive grains, thus decreasing the cutting accuracy or cutting efficiency. In a worse situation, even the resin layer (i.e., the bonding layer) may peel off along with the abrasive grains. That is to say, if the coolant mainly composed of water is used, then friction will be caused between those portions of the wire at the reel bobbin, thus shortening the wire life. A fixed abrasive wire is relatively expensive. Accordingly, to cut down the cost for the cutting process, the life of the wire is preferably extended.\n\n[0015]Furthermore, if a wire, on which the abrasive grains are bonded with a resin layer that has been deposited on the outer surface of a core, is used, then a “resin peeling phenomenon”, i.e., peeling of the resin layer off the core, might occur. As a result of various researches, the present inventors discovered that this resin peeling phenomenon was brought about due to not only the damage done on the abrasive grains because of the friction of contact between the wire portions but also another damage done on the resin layer by the coolant mainly composed of water (e.g., a coolant including an amine such as an alkaline rust preventive among other things).\n\n[0016]As described above, it is particularly difficult to cut a rare-earth alloy with a wire saw. However, the life of a wire is shortened by the use of such a coolant mainly composed of water not just in cutting a rare-earth alloy but also in cutting any other hard and brittle material such as silicon, sapphire, quartz, glass, neodymium or ferrite.\n\nSUMMARY OF THE INVENTION\n\n[0017]In order to overcome the problems described above, a primary object of the present invention is to extend the life of a wire when some workpiece is cut with a wire saw machine using a coolant mainly composed of water.\n\n[0018]A cutting method according to the present invention is a method of cutting a workpiece with a wire, on which abrasive grains are fixed with a resin layer provided on the outer surface of a core wire. The method includes the steps of: providing a wire, of which the surface is coated with a lubricant including a glycol, by reeling the wire up in a reel bobbin; reeling the wire off the reel bobbin and letting the wire travel on a plurality of rollers; and cutting the workpiece (object being cut) with the traveling wire while a portion of the workpiece being machined with the wire is supplied with a first coolant which is mainly composed of water, thereby achieving the object described above. Among other things, the resin peeling problem can be avoided.\n\n[0019]The method preferably further includes the step of supplying a second coolant, which is also mainly composed of water, to the wire that is either reeled up in the reel bobbin or traveling in the vicinity of the reel bobbin.\n\n[0020]The second coolant preferably exhibits a kinetic friction coefficient of 0.3 or less at 25° C. with respect to a rare-earth alloy.\n\n[0021]The second coolant may include glycol.\n\n[0022]The second coolant may be supplied to the wire by an atomization method.\n\n[0023]The providing step preferably includes reeling the wire up in the reel bobbin with a tension of 7 N to 15 N.\n\n[0024]The wire is preferably reeled up in the reel bobbin at a pitch that is less than twice as long as the outside diameter of the wire, more preferably more than 100% to 190% of the outside diameter.\n\n[0025]The first coolant preferably exhibits a kinetic friction coefficient of 0.1 to 0.3 at 25° C. with respect to the rare-earth alloy.\n\n[0026]The resin is preferably a phenol resin, an epoxy resin or a polyimide resin.\n\n[0027]In a direction in which the wire is traveling, an average distance between adjacent ones of the abrasive grains preferably falls within the range of 100% through 600% of the mean particle size of the abrasive grains and portions of the abrasive grains protruding from the surface of the resin layer preferably have an average height of 10 μm to 40 μm.\n\n[0028]The second coolant preferably has higher viscosity than the first coolant.\n\n[0029]The first and second coolants preferably have temperatures of 15° C. to 35° C.\n\n[0030]Each of the plurality of rollers preferably includes a polymer layer on which a guide groove is provided, the guide groove preferably has a pair of sloped surfaces, at least one of which defines an angle of 25 degrees to less than 45 degrees with respect to a radial direction of the roller, and the wire is preferably passed between the sloped surfaces.\n\n[0031]The workpiece may be made of an R—Fe—B based rare-earth sintered alloy. For example, the workpiece may be made of an Nd—Fe—B based rare-earth sintered alloy.\n\n[0032]A method for producing rare-earth magnets according to the present invention includes the steps of; making a sintered body for the rare-earth magnets from a rare-earth alloy powder; and dividing the sintered body by one of the cutting methods described above into a plurality of rare-earth magnets. A wire saw machine according to the present invention includes: a wire, on which abrasive grains are fixed with a resin layer provided on the outer surface of a core wire; a reel bobbin, around which the wire is reeled up; a plurality of rollers, which reels the wire off the reel bobbin to let the wire travel thereon; a device for supplying a first coolant to a portion of a workpiece being cut with the wire; and a device for supplying a second coolant, including a glycol, to the wire that is either reeled up in the reel bobbin or traveling in the vicinity of the reel bobbin, thereby achieving the object described above.\n\n[0033]The device for supplying the second coolant may include an atomizer.\n\n[0034]Rare-earth magnets produced by the rare-earth magnet producing method of the present invention are preferably used in a voice coil motor.\n\nBRIEF DESCRIPTION OF THE DRAWINGS\n\n[0035]FIG. 1 is a schematic representation illustrating a wire saw machine 100, which can be used effectively to carry out a cutting method according to a preferred embodiment of the present invention.\n\n[0036]FIG. 2 schematically illustrates a structure for supplying a coolant to the wire 20 that is reeled up in the reel bobbin 40a or 40b of the wire saw machine 100.\n\n[0037]FIG. 3 is a schematic representation illustrating a configuration for the wire saw machine 100 shown in FIG. 1 in the vicinity of the machined portion.\n\n[0038]FIG. 4 schematically illustrates a cross-sectional structure for the wire 20 that can be used effectively to carry out the cutting method of the preferred embodiment of the present invention.\n\n[0039]FIG. 5 schematically illustrates a cross-sectional structure for rollers that are preferably used in the wire saw machines 100 and 200.\n\n[0040]FIG. 6 schematically illustrates a cross-sectional structure for a conventional roller.\n\n[0041]FIG. 7 is a graph showing relationships between the tilt angle of the slope 10S of the roller guide groove and the wire torsional angle.\n\nDETAILED DESCRIPTION OF PREFERRED EMBODIMENTS\n\n[0042]Hereinafter, a cutting method according to a preferred embodiment of the present invention will be described.\n\n[0043]In a cutting process according to the present invention, a wire, obtained by fixing abrasive grains (which are typically diamond abrasive grains) on a core wire (which is typically a piano wire), is used. Such a wire will be referred to herein as a “fixed abrasive wire”. The wire, which is reeled in a pair of reel bobbins, travels on a plurality of rollers, and a rare-earth alloy (workpiece) is pressed against, and cut with, the traveling wire. In this process step, the rare-earth alloy is cut while a portion of the rare-earth alloy being machined with the wire is supplied with a coolant mainly composed of water (first coolant). In this case, in the process step of providing the wire by reeling it in the reel bobbins, the surface of the wire is preferably coated with a lubricant including a glycol. Then, the resin layer will not peel off the wire, on which the abrasive grains are fixed with the resin layer provided on the outer surface of the core wire.\n\n[0044]As the lubricant including a glycol, either a non-diluted glycol or an aqueous solution including at least 50 mass % of glycol is preferably used. For example, polyoxyalkylene is preferably used as the glycol. A glycol shows higher hydrophilicity (or water holding ability) than the resin layer and is believed to act so as to prevent the resin layer from absorbing water. Also, the lubricant including the glycol, supplied to the wire in the step of providing the wire by reeling it in the reel bobbins, preferably exhibits higher lubricity than the coolant supplied to the machined portion.\n\n[0045]The process step of coating the surface of the wire with the lubricant including the glycol is preferably carried out while the wire is being reeled in the reel bobbins of the wire saw machine. As a method of supplying the glycol (or glycol aqueous solution) to the wire surface, a scattering method with a spray, a dripping method, a coating method or an immersing method may be appropriately adopted. The wire is preferably reeled in the reel bobbins with a tension of 7 N to 15 N. The reasons are as follows. Specifically, if the tension was lower than 7 N, then the wire might get entangled. However, if the tension exceeded 15 N, then some damage could be easily done due to friction between portions of the wire themselves. Also, the tension is preferably set within this range because good cutting accuracy is achieved in that case.\n\n[0046]The pitch at which the wire is reeled in the reel bobbins (i.e., the distance between the centers of adjacent wire portions) is preferably less than twice as long as the outside diameter of the wire and more preferably greater than 100% but equal to or smaller than 190% of the outside diameter. By adjusting the reeling pitch in this manner, it is possible to prevent a newly incoming portion of the wire from getting entangled with the wire portions that have already been reeled in the reel bobbins. As a result, the flexure of the wire and the friction between the wire portions can be minimized.\n\n[0047]In this manner, if the wire is coated with the lubricant including the glycol while the wire is reeled in the reel bobbins in the providing process step of the wire saw machine, then the deterioration of the resin layer of the wire, which would otherwise be caused due to the absorption of moisture into the wire during storage, can be minimized. The lubricant including the glycol may be supplied to the wire not just in that providing process step. For example, a glycol may also be added to or mixed with a second coolant.\n\n[0048]To extend the life of the wire, either those wire portions reeled in the pair of reel bobbins or the wire portions traveling in the vicinity of the pair of reel bobbins are preferably further supplied with a coolant mainly composed of water (i.e., a second coolant). By additionally supplying the coolant to the wire portions that are reeled in the reel bobbins, the quantity of heat or mechanical friction created due to the contact of those wire portions at the reel bobbins can be reduced. As a result, the mechanical damage to be done on the wire can be reduced, and therefore, the decrease in cutting accuracy or efficiency can be minimized and the life of the wire can be extended.\n\n[0049]The first coolant preferably exhibits a kinetic friction coefficient of 0.1 to 0.3 at 25° C. with respect to the rare-earth alloy. The second coolant also preferably exhibits a kinetic friction coefficient of 0.3 or less (more preferably 0.15 or less) at 25° C. with respect to the rare-earth alloy. It should be noted that the kinetic friction coefficients specified for the following preferred embodiment were obtained by testing an R—Fe—B based rare-earth alloy sintered body with a four-ball friction tester. The composition and manufacturing process of a rare-earth alloy that can be used effectively to make an R—Fe—B based rare-earth magnet are described in U.S. Pat. Nos. 4,770,723 and 4,792,368, for example.\n\n[0050]In this example, the first and second coolants for use in a cutting process according to the present invention are specified by their kinetic friction coefficients at 25° C. However, the temperature of the coolants actually used does not have to be 25° C. Nevertheless, to achieve the effects of the present invention, coolants of which the temperatures are controlled to the range of 15° C. to 35° C. are preferably used. The coolant temperatures more preferably fall within the range of 20° C. to 30° C. As is well known, the kinetic friction coefficient of a coolant depends on the temperature. Accordingly, if the temperatures of the coolants actually used are way out of these temperature ranges, then the kinetic friction coefficients of the coolants will practically fall out of their preferred ranges. As a result, the cooling efficiency decreases.\n\n[0051]By using the coolants with these kinetic friction coefficients, the abnormal increase in the temperature of the wire can be minimized effectively. Accordingly, the unwanted abrasive grain drop-off and wire snapping can be minimized, or even eliminated, effectively. As a result, the decrease in machining accuracy can be avoided and the wire can be used for a longer time than the prior art. Consequently, the manufacturing cost can be cut down.\n\n[0052]These effects are equally achieved by not only the first coolant being supplied to the machined portion but also the second coolant being supplied to the wire portions reeled up in the reel bobbins or traveling in the vicinity of the pair of reel bobbins. For that reason, the first and second coolants may be the same coolant. Alternatively, the second coolant may have higher viscosity than the first coolant so as to easily deposit on the wire portions reeled up in the reel bobbins or traveling in the vicinity of the reel bobbins. As the first and second coolants, coolants having viscosities of 1 mPa·s to 50 mPa·s (or kinematic viscosities of 1 mm2/s to 50 mm2/s) are preferably used. To make the second coolant deposit on the wire more easily, a coolant with a viscosity of at least 5 mPa·s (i.e., with a kinematic viscosity of at least 5 mm2/s) is preferably used. The viscosity of the coolant can be adjusted by controlling the concentration of the lubricant to be mixed with water as will be described later.\n\n[0053]The second coolant does not have to be supplied through the cutting process. Instead, as long as the wire reeled up in the reel bobbins can be kept supplied with a good quantity of that coolant, the second coolant may also be supplied intermittently. It should be noted that the coolant mainly composed of water (e.g., a coolant including alkanolamine among other things) affects the resin more seriously than an oil coolant. For that reason, in using such a wire obtained by fixing abrasive grains thereon with a resin layer, the amount of the coolant supplied is preferably small. Accordingly, the wire portions that are either reeled up in the reel bobbins or traveling in the vicinity of the reel bobbins are preferably supplied with the coolant by an atomization method or a dripping method. Among other things, the spray method is preferred because a small amount of coolant can be uniformly supplied to the wire portions that are reeled up in the reel bobbins. The amount of the coolant to be supplied may be appropriately determined by the type, length and traveling velocity of the wire. For example, the coolant may be supplied at a rate of 50 ml/min to 500 ml/min. However, if an electroplated wire (i.e., a wire obtained by fixing abrasive grains thereon with an Ni plating layer, for example) or any other wire exhibiting high resistance to the aqueous coolant is used, then the overall reel bobbins may be immersed in the coolant.\n\n[0054]The coolant may be prepared by adding either a surfactant or a synthetic lubricant (i.e., a so-called “synthetic”) to water. A predetermined kinetic friction coefficient is achievable by changing the type or the amount of the additive appropriately. In addition, if such a coolant mainly composed of water is used, then the cutting debris of the rare-earth alloy can be easily sorted out of the cutting-created sludge with a magnet and the coolant can be recycled because the coolant has a relatively low viscosity. It is also possible to prevent the coolant waste disposal process from having harmful effects on natural environments. Furthermore, the amount of carbon included in the sludge can be reduced. As a result, the magnet to be made of the cutting debris collected from the sludge can have improved magnetic properties.\n\n[0055]If the workpiece is cut with a wire traveling at a high velocity, then the coolant may foam to decrease the cooling efficiency unintentionally. However, by using a coolant including an antifoaming agent, such decrease in cooling efficiency due to foaming of the coolant can be minimized. Furthermore, when a coolant with a PH of 8 to 11 is used, the corrosion of the rare-earth alloy can be minimized. Moreover, by using a coolant including a rust preventive, the oxidation of the rare-earth alloy can be reduced significantly. The amounts of these additives may be appropriately adjusted with the type and cutting conditions of the rare-earth alloy and other factors taken into account.\n\n[0056]A wire, on which diamond abrasive grains are fixed with a resin, is preferably used as the wire. More specifically, a wire, obtained by fixing diamond abrasive grains on the outer surface of a core wire (which is typically a piano wire) with a resin, is preferably used. Among other things, a phenol resin, an epoxy resin and a polyimide resin are particularly preferred. The reasons are as follows. First, these resins show not only high bond strengths with respect to the outer surface of the piano wire (i.e., hard-drawn wire) but also excellent wettability (i.e., permeability) with respect to the coolant as will be described later. Secondly, such wires are less expensive than wires to be produced by an electrodeposition process, thus reducing the cost of cutting a rare-earth alloy. It should be noted that the core wire of the wire does not have to be a piano wire but may also be made of an Ni—Cr alloy, an Fe—Ni alloy or any other suitable alloy, W, Mo or any other suitable refractory metal, or a bundle of high-strength fibers such as nylon fibers. Also, the material of the abrasive grains is not limited to diamond, either, but may be SiC, B, C or CBN (cubic boron nitride), for example.\n\n[0057]To achieve the effect of small machining allowance, the wire preferably has an outside diameter of 0.3 mm or less, more preferably 0.25 mm or less. The lower limit of the wire outside diameter is defined so as to achieve sufficient strength. In addition, to fix abrasive grains of a predetermined size with sufficient strength, a core wire with a diameter of about 0.12 mm to about 0.20 mm is used. In view of the cutting efficiency, the mean particle size D of the abrasive grains preferably satisfies 20 μm≧D≧60 μm and more preferably satisfies 40 μm≧D≧60 μm. Also, considering the cutting efficiency and the cutting debris (sludge) flushing efficiency, the average distance between two adjacent abrasive grains in the wire traveling direction is preferably 100% to 600% of the mean particle size D of the abrasive grains. Also, the average height of the portions of the abrasive grains protruding from the surface of the phenol resin layer is preferably within the range of 10 μm to 40 μm. Such a wire is readily available from any common wire manufacturer (e.g., Allied Material Corp.) as long as these specifications are worked out in advance.\n\n[0058]By using such a wire, good cutting efficiency and debris flushing capability are achieved. Thus, a workpiece can be machined even if the wire is allowed to travel at a relatively high velocity (e.g., at 1,000 m/min). In addition, since the rare-earth alloy can be cooled efficiently with the coolant described above, the rare-earth alloy can be constantly machined for a long time with good machining accuracy. When the coolant mainly composed of water is used, the cutting efficiency can be optimized by setting the traveling velocity about 20-30% higher (e.g., in the range of 1,100 m/min to 1,200 m/min) than the situation where an oil coolant is used.\n\n[0059]The coolant mainly composed of water for use in the cutting method of the present invention has low viscosity (with a kinematic viscosity of about 1 mm2/s). Accordingly, the resultant cutting debris flushing capability is lower than that achieved by an oil coolant (which usually has a kinematic viscosity of 5 mm2/s or more). Thus, in order to increase the cutting debris flushing capability, the machined portion is preferably kept immersed in the coolant stored in the vessel in the cutting process. In addition, the coolant is preferably supplied into the vessel not only through its bottom but also from its opening such that the coolant is always overflowing from the opening of the vessel.\n\n[0060]The cutting debris, which has been flushed into the low-viscosity coolant, easily precipitates and just a small amount of cutting debris is floating around the opening of the vessel. To cut the workpiece with the machined portion immersed in the coolant, the wire needs to be arranged so as to travel through the coolant in the vicinity of the opening of the vessel. Accordingly, the wire travels in the coolant including little cutting debris, and the machined portion is supplied with the coolant including little cutting debris. In particular, if the coolant is also supplied from the vessel opening so as to be always overflowing from the opening, the coolant supplied to the machined portion can have a decreased amount of cutting debris. Furthermore, the cutting debris that has been deposited on the wire can also be washed away mechanically with the flow of the coolant supplied from the vessel opening. The quantity of the coolant overflowing per minute is preferably 50% or more of the volume of the vessel. Also, the amount of the coolant supplied from the opening is preferably greater than that of the coolant supplied through the bottom of the vessel.\n\n[0061]Furthermore, if a curtain-like flow of the coolant (or the air) is formed around the vessel opening and if the surface of the overflowing coolant is kept higher than the vessel walls by reducing the amount of the coolant overflowing from the vessel opening, then an even greater quantity of coolant is supplied to around the machined portion. As a result, the amount of the cutting debris in the coolant can be further decreased. In this preferred embodiment, a curtain-like coolant flow is formed over the four sides of the vessel opening intersecting with the wire traveling direction. A discharge pressure to form the coolant flow is preferably in the range of 0.2 MPa (i.e., 2 kg/cm2) to 1.0 MPa (i.e., 10 kg/cm2), more preferably in the range of 0.4 MPa (i.e., 4 kg/cm2) to 0.6 MPa (i.e., 6 kg/cm2). The reasons are as follows. Specifically, if the discharge pressure is lower than these ranges, sufficient effects may not be achieved. However, if the discharge pressure exceeds these ranges, then the wire flexes so much that the machining accuracy may decrease.\n\n[0062]Also, among a plurality of main rollers provided to make the wire travel thereon, two main rollers, arranged on both sides of the vessel to regulate the traveling path of the wire, are also preferably supplied with a coolant discharged. By discharging the coolant to these main rollers, the increase in the temperature of an organic polymer layer (e.g., a urethane rubber layer), which is provided on the surface of the main rollers so as to have a wire guide groove, can be minimized. In addition, the cutting debris (or sludge) that has been deposited or left either on the wire or in the guide groove can also be washed away, thereby preventing the wire traveling path from deviating or the wire from derailing from the groove.\n\n[0063]Also, by collecting a dirty liquid, including the sludge with the rare-earth alloy cutting debris produced by the cutting process and the coolants, and by getting the rare-earth alloy cutting debris sorted out from the sludge by a magnet, the coolants- can be recycled (e.g., used cyclically). As described above, since the coolant mainly composed of water has low viscosity, the cutting debris can be easily sorted out therefrom. Also, by sorting out the rare-earth alloy cutting debris, the coolant waste can be disposed of easily without doing any damage on the environments', '发明背景 \n\n [0001] 线锯切割方法,线锯机以及稀土磁体的制造方法技术领域本发明涉及线锯切割方法,线锯机以及稀土磁体的制造方法。 \n\n 背景技术 \n\n [0002] 稀土合金用作制造强磁体的材料。 通过将稀土合金磁化而获得的稀土磁体可以有效地用作音圈电动机的磁体,该音圈电动机例如用于将磁头定位在磁记录器中。 \n\n [0003] 在现有技术中,稀土合金的铸锭(或烧结体)通常通过例如利用旋转的切片刀片将铸锭切片的技术来切割。 然而,在该切片刀片切割过程中,切割刃相对较厚,因此需要大量的加工余量。 结果,稀土合金材料的产率很低,从而增加了所得稀土合金产品(例如稀土磁体)的成本。 \n\n [0004] 线切割工艺是一种已知的切割方法,与切片刀片的切割工艺相比,其需要的加工余量较小。 例如,日本公开公报第11-198020号公开了可以用线切割诸如硅,蓝宝石,石英,玻璃,钕或铁氧体的硬而脆的材料,该线是通过将超级磨料颗粒固定在外部而获得的。 高硬度芯线带有粘结层的表面(有时称为“固定研磨线”)。 \n\n [0005] 如果通过用这样的固定磨削丝以加工余量小的方式切割稀土合金锭而能够同时获得多个预定厚度的板,则可以大幅度降低稀土磁体的制造成本。 但是,没有人报道过用这种可固定生产量的固定磨丝可以成功地切割稀土合金。 \n\n [0006] 本发明人对这种现象进行了广泛的研究,并且发现了该问题的主要原因在于通过烧结工艺生产的稀土合金之间的机械性能上的显着差异(在本文中将其称为“稀土烧结”)。 合金”和硅。 更具体地,稀土类烧结合金包括主要引起脆性断裂的硬质主相(R2Fe14B相)和引起延性断裂的晶界相(富R相)。 因此,与诸如硅的硬而脆的材料不同,稀土烧结合金不那么容易切割。 也就是说,与切割硅或任何其他硬而脆的材料相比,产生了更高的切割阻力并且也产生了大量的热量。 同样,稀土合金的比重约为7.5,比硅或任何其他硬而脆的材料的比重高得多。 因此,通过加工过程产生的切削屑(或污泥)不能轻易地从加工部分冲走。 \n\n [0007] 因此,为了以较高的加工精度和效率切割稀土合金,不仅需要充分降低切割阻力,而且还必须有效地散发在切割过程中产生的热量,即有效地冷却加工部分。 此外,还必须有效地冲走由切割过程产生的切割碎屑。 \n\n [0008] 通过向稀土合金加工部分提供大量的高润滑剂冷却剂(在本文中也称为“切削液”),可以降低切削阻力,并消散切削过程中产生的热量 有效率的。 本发明人通过实验发现并证实,如果金属丝被足够量的油冷却剂弄湿,则行进的金属丝可以向狭窄的机加工部分供应大量的该冷却剂。 \n\n [0009] 但是,当使用这种油冷却剂时,要处理废料要花费大量成本,以免对环境造成任何损害,并且由于很难从废渣中分离出碎屑,因此很难回收利用废料或碎屑。 浪费。 另外,如果稀土合金的切削碎屑被回收,那么材料中所含的碳量将增加,从而无意中降低了磁性能。 考虑到这些考虑,优选将水(或水性冷却剂)用作冷却剂。 然而,如果将水用作冷却剂,则由于水的粘度低(运动粘度为1.0mm 2 / s),因此无法保持足够量的水沉积在钢丝上。 结果,即使金属丝被水弄湿,也不能将足够量的水供应到机加工部分。 \n\n [0010] 日本特开平11-198020号公报公开了通过使金属丝通过从冷却剂容器溢流的冷却剂而移动,即使在固定磨料丝需要在其上行进的情况下,冷却剂也可以如预期那样保持沉积在金属丝上。 高速(例如2,000 m / min)。 然而,本发明人通过实验发现,即使当用穿过这样的溢水的金属丝切割稀土合金时(例如,如日本特开平11-198020号公报所公开),磨粒仍然掉落。 或在最坏的情况下导线断裂。 即使导线以约800 m / min的速度行进,这些不便也会发生。 据信这是因为即使采用上述方法,切削阻力仍然很高,并且仍然不能将足够的水供应到机加工部分。 \n\n [0011] 作为各种实验的结果,本发明人发现,可以通过向加工部分供应主要由表面张力为25mN / m至60mN / m(或动摩擦系数)的水组成的冷却剂来有效地冷却线。 在25°C下为0.1-0.3)(参见日本专利申请2000-358462和2001-318867)。 表面张力或动摩擦系数在上述范围内的冷却剂对稀土合金和/或线材的润湿性(或顺应性)比水高。 因此,据信冷却剂可以有效地渗入机加工部分(即,稀土合金和金属丝彼此接触并且稀土合金被切割的区域,并且在本文中也称为冷却区)。  “切槽”)。 自然地,主要由水组成的冷却剂比油冷却剂(例如,矿物油)具有更高的比热,因此导致更高的冷却效率。 如本文所用,“主要由水组成的冷却剂”是指冷却剂,其至少70重量%是水。 \n\n [0012] 然而,作为进一步研究的结果,本发明人发现,当使用这样的主要由水组成的冷却剂时,由于线轴的一些摩擦,磨料颗粒从绕线筒上的线轴上脱落,而线轴在其中。 导线各部分之间的接触。 有时将这种现象称为“颗粒脱落”。 \n\n [0013] 本发明人发现该现象是由于以下原因而发生的。 具体地,与油冷却剂相比,主要由水组成的冷却剂对电线的粘附性较低,并且蒸发性较高。 因此,当将金属丝卷绕在卷线筒中时,几乎没有冷却剂留在金属丝上,因此,不能减少由于金属丝部分之间的接触摩擦而产生的热量或机械摩擦。 就是说,这种情况可能是由于冷却剂应到达机加工部分中的金属丝,但在途中,即在将金属丝卷到卷线筒中时散开而造成的。 \n\n [0014] 此外,即使磨粒没有从金属丝上脱落,在金属丝的那些部分之间引起的摩擦也总是对磨粒产生一些机械损伤,从而降低了切割精度或切割效率。 在更坏的情况下,甚至树脂层(即,粘结层)也可能与磨粒一起剥离。 也就是说,如果使用主要由水组成的冷却剂,则在绕线轴处的那些部分之间会产生摩擦,从而缩短了电线的寿命。 固定的砂线比较昂贵。 因此,为了减少切割过程的成本,优选延长线的寿命。 \n\n [0015] 此外,如果使用金属丝,其上的磨料颗粒与已经沉积在芯子外表面上的树脂层结合,则“树脂剥离现象”,即树脂层从芯子上剥离。  ,可能会发生。 作为各种研究的结果,本发明人发现,造成这种树脂剥离现象的原因不仅是由于线部分之间的接触摩擦而对磨料颗粒造成的损害,而且还因为 主要由水组成的冷却剂(例如,包括胺的冷却剂,例如碱性防锈剂)。 \n\n [0016] 如上所述,用线锯切割稀土合金特别困难。 但是,通过使用这种主要由水组成的冷却剂,不仅会切割稀土合金,而且还会切割任何其他硬而脆的材料,例如硅,蓝宝石,石英,玻璃,钕,从而缩短了电线的使用寿命。 或铁氧体。 \n\n 发明内容 \n\n [0017] 为了克服上述问题,本发明的主要目的是延长当使用线锯机使用主要由水组成的冷却剂切割某些工件时延长线的寿命。 \n\n [0018] 根据本发明的切割方法是一种用金属丝切割工件的方法,在其上通过设置在芯线的外表面上的树脂层固定了磨料颗粒。 该方法包括以下步骤:通过在卷线筒中卷起电线来提供其表面涂覆有包括二元醇的润滑剂的电线。 从绕线轴上绕线,然后让线在多个滚轴上移动; 并且,在对被线加工的工件的一部分供给以水为主成分的第一冷却剂的同时,用移动的线切割工件(被切割物),从而实现上述目的。 其中,可以避免树脂剥离问题。 \n\n [0019] 该方法优选地还包括以下步骤:向也卷绕在绕线筒管中或在绕线筒管附近行进的线材供给第二冷却剂,其也主要由水组成。 \n\n [0020] 第二冷却剂优选在25℃下相对于稀土合金表现出0.3或更小的动摩擦系数。 \n\n [0021] 第二冷却剂可包括乙二醇。 \n\n [0022] 可以通过雾化方法将第二冷却剂供应到焊丝。 \n\n [0023] 提供步骤优选包括以7N至15N的张力将线材卷到卷线筒中。 \n\n [0024] 优选将金属丝以小于金属丝的外径的两倍长的节距卷绕在卷线筒中,更优选地,大于金属丝外径的两倍。 \n\n [0025] 第一冷却剂优选在25℃下相对于稀土合金表现出0.1至0.3的动摩擦系数。 \n\n [0026] 该树脂优选为酚醛树脂,环氧树脂或聚酰亚胺树脂。 \n\n [0027] 在金属丝行进的方向上,相邻磨料颗粒之间的平均距离优选落在磨料颗粒和从表面突出的部分磨料颗粒的平均粒径的100%至600%的范围内 树脂层的平均高度优选为10μm至40μm。 \n\n [0028] 第二冷却剂优选具有比第一冷却剂更高的粘度。 \n\n [0029] 第一冷却剂和第二冷却剂优选具有15℃至35℃的温度。 \n\n [0030] 多个辊中的每一个优选地包括聚合物层,在该聚合物层上设置有引导槽,该引导槽优选具有一对倾斜的表面,其中至少一个倾斜表面相对于支撑面限定25度至小于45度的角度。 导线优选在辊的径向方向上通过,并且线优选在倾斜表面之间穿过。 \n\n [0031] 工件可以由基于R-Fe-B的稀土烧结合金制成。 例如,工件可以由基于Nd-Fe-B的稀土类烧结合金制成。 \n\n [0032] 根据本发明的稀土磁体的制造方法包括以下步骤: 用稀土合金粉末制成稀土磁体的烧结体。 通过上述的一种切割方法将烧结体分割成多个稀土类磁铁。 根据本发明的线锯机,包括:线,其上设置有设置在芯线的外表面上的树脂层固定有磨料颗粒; 卷线筒,绕线轴将其卷起; 多个辊,其将线材从线轴上绕线,以使线材在其上行进; 用于将第一冷却剂供应到被线切割的工件的一部分的装置; 本发明的目的是提供一种装置,该装置将包含乙二醇的第二冷却剂供给到被卷绕在绕线轴上或在绕线轴附近行进的金属丝,从而实现了上述目的。 \n\n [0033] 用于供应第二冷却剂的装置可以包括雾化器。 \n\n [0034] 通过本发明的稀土类磁铁的制造方法制造的稀土类磁铁优选用于音圈电动机。 \n\n 附图的简要说明 \n\n [0035] 图。 图1是示出线锯机的示意图。 100 可以有效地用于执行根据本发明的优选实施例的切割方法。 \n\n [0036] 图。 图2示意性地示出了用于向线材供应冷却剂的结构。 20  卷在线轴上的线轴 40 a  要么 40 b  线锯机 100 。 \n\n [0037] 图。 图3是示出线锯机的构造的示意图。 100  如图所示。  1在机加工部分附近。 \n\n [0038] 图。 图4示意性地示出了导线的横截面结构。 20  可以有效地用于实施本发明的优选实施方式的切割方法。 \n\n [0039] 图。 图5示意性地示出了优选用于线锯机中的辊的横截面结构。 100  和 200 。 \n\n [0040] 图。 图6示意性地示出了传统辊的截面结构。 \n\n [0041] 图。 图7是示出斜率的倾斜角之间的关系的曲线图 10 滚子导槽的S和钢丝的扭转角。 \n\n 具体实施方式 \n\n [0042] 在下文中,将描述根据本发明的优选实施方式的切割方法。 \n\n [0043] 在根据本发明的切割方法中,使用通过将磨粒(通常为金刚石磨粒)固定在芯线(通常为钢琴线)上而获得的线。 这样的线在本文中将被称为“固定研磨线”。 被卷绕在一对绕线轴上的线材在多个辊上行进,并且稀土合金(工件)被压在行进的线材上并被切断。 在该处理步骤中,在对稀土合金进行切削的同时,对一部分用金属丝加工的稀土合金供给主要由水组成的冷却剂(第一冷却剂)。 在这种情况下,在通过将其卷绕在卷线轴上来提供导线的工艺步骤中,导线的表面优选涂覆有包括乙二醇的润滑剂。 然后,树脂层将不会从金属丝上剥落,通过设置在芯线的外表面上的树脂层将磨料固定在金属线上。 \n\n [0044] 作为包含二醇的润滑剂,优选使用非稀释的二醇或包含至少50质量%的二醇的水溶液。 例如,聚氧化烯优选用作二醇。 二醇显示出比树脂层更高的亲水性(或保水能力),并且据信起着防止树脂层吸水的作用。 另外,在通过将其卷绕在卷线轴上来提供线材的步骤中,被提供给线材的包括乙二醇的润滑剂优选地表现出比被提供给机加工部分的冷却剂更高的润滑性。 \n\n [0045] 优选地,在将线材卷到线锯机的线轴中时,执行用包括二元醇的润滑剂涂覆线材表面的工艺步骤。 作为将二元醇(或二元醇水溶液)供给到线材表面的方法,可以适当地采用喷雾的散射法,滴落法,涂布法或浸渍法。 优选将金属丝以7N至15N的张力卷绕在卷线筒中。原因如下。 具体而言,如果张力低于7 N,则金属丝可能会缠绕在一起。 但是,如果张力超过15 N,则由于线材自身之间的摩擦而容易造成一些损坏。 另外,优选将张力设置在该范围内,因为在那种情况下实现了良好的切割精度。 \n\n [0046] 绕线筒中绕线的绕线间距(即,相邻绕线部分的中心之间的距离)最好小于绕线外径的两倍,更优选大于100%,但等于或大于 小于外径的190%。 通过以这种方式调节卷取节距,可以防止线材的新进入部分与已经卷在线轴筒管中的线材部分缠绕。 结果,线的挠曲和线部分之间的摩擦可以最小化。 \n\n [0047] 以这种方式,如果在线锯机的提供工艺步骤中将线材卷到卷线筒中时,线材被涂覆有包括乙二醇的润滑剂,则线材的树脂层将变质,否则将导致变质。 在存储过程中,由于水分吸收到金属丝中而造成的影响可以最小化。 不仅在该提供处理步骤中,还可以将包括乙二醇的润滑剂供应到焊丝。 例如,也可以将乙二醇添加到第二冷却剂中或与第二冷却剂混合。 \n\n [0048] 为了延长线的寿命,优选地,进一步对在一对卷线轴上卷绕的那些线部分或在该对卷线轴附近行进的线部分提供主要由水组成的冷却剂(即,第二冷却剂)。  )。 通过将冷却剂额外地供应到卷在绕线管中的线部分,可以减少由于那些线部分在绕线管上的接触而产生的热量或机械摩擦。 结果,可以减少对金属丝造成的机械损伤,因此,可以使切割精度或效率的降低最小化,并且可以延长金属丝的寿命。 \n\n [0049] 第一冷却剂优选在25℃下相对于稀土合金表现出0.1至0.3的动摩擦系数。 第二冷却剂还优选在25℃下相对于稀土合金表现出0.3或更小的动摩擦系数(更优选为0.15或更小)。 另外,以下的实施方式所规定的动摩擦系数是通过用四球式摩擦试验机对R-Fe-B系稀土合金烧结体进行试验而得到的。 在美国专利No.5,200,893中描述了可以有效地用于制造基于R-Fe-B的稀土磁体的稀土合金的组成和制造工艺。 例如,美国专利号4,770,723和4,792,368。 \n\n [0050] 在该示例中,根据本发明的用于切削过程的第一和第二冷却剂由它们在25℃下的动摩擦系数来指定。然而,实际使用的冷却剂的温度不必为25℃。 然而,为了获得本发明的效果,优选使用温度被控制在15℃至35℃的范围内的冷却剂。 冷却剂温度更优选落入20℃至30℃的范围内。众所周知,冷却剂的动摩擦系数取决于温度。 因此,如果实际使用的冷却剂的温度超出这些温度范围,则冷却剂的动摩擦系数将实际上落在其优选范围之外。 结果,冷却效率降低。 \n\n [0051] 通过使用具有这些动摩擦系数的冷却剂,可以有效地使焊丝温度的异常升高最小化。 因此,可以有效地最小化甚至消除不希望的磨粒掉落和线折断。 结果,可以避免加工精度的降低,并且与现有技术相比,可以使用更长的时间。 因此,可以降低制造成本。 \n\n [0052] 同样地,不仅通过将第一冷却剂供给至加工部,而且还通过将第二冷却剂供给至卷取在绕线筒中或在一对绕线筒附近行进的线材部,同样地实现这些效果。 因此,第一冷却剂和第二冷却剂可以是相同的冷却剂。 替代地,第二冷却剂可以具有比第一冷却剂更高的粘度,以便容易地沉积在卷绕在绕线架上或在绕线架附近行进的线材部分上。 作为第一和第二冷却剂,优选使用粘度为1mPa·s至50mPa·s(或运动粘度为1mm 2 / s至50mm 2 / s)的冷却剂。 为了使第二冷却剂更容易地沉积在金属丝上,优选使用粘度为至少5mPa·s(即,运动粘度为至少5mm 2 / s)的冷却剂。 如后所述,可以通过控制与水混合的润滑剂的浓度来调节冷却剂的粘度。 \n\n [0053] 第二冷却剂不必通过切割过程来供应。 取而代之的是,只要能够使卷取到线轴上的线材保持供给大量的冷却剂,则也可以间歇地供给第二冷却剂。 应该注意的是,主要由水组成的冷却剂(例如,除其他外包括链烷醇胺的冷却剂)比油冷却剂对树脂的影响更大。 因此,在使用通过将磨粒固定在树脂层上而获得的这种线材时,冷却剂的供给量优选少。 因此,优选通过雾化法或滴落法向在卷线筒中卷起或在卷线筒附近行进的线材部分提供冷却剂。 其中,喷涂方法是优选的,因为可以将少量的冷却剂均匀地供应到卷在线轴上的线部分。 供应的冷却剂的量可以由焊丝的类型,长度和行进速度适当地确定。 例如,可以以50ml / min至500ml / min的速率供应冷却剂。 但是,如果使用电镀线(例如,通过用镍镀层将磨料颗粒固定在其上而获得的线)或对水性冷却液表现出高抗性的任何其他线,则可将整个卷线轴浸入到 冷却液。 \n\n [0054] 可以通过将表面活性剂或合成润滑剂(即所谓的“合成”)添加到水中来制备冷却剂。 通过适当地改变添加剂的种类或量,可以得到规定的动摩擦系数。 另外,如果使用这样的主要由水组成的冷却剂,则稀土合金的切削残渣可以容易地用磁体从切削产生的污泥中分选出来,并且冷却剂可以循环使用,因为 低粘度。 还可以防止冷却剂废物处理过程对自然环境产生有害影响。 此外,可以减少污泥中所含的碳量。 结果,由从污泥收集的切割碎屑制成的磁体可以具有改善的磁性能。 \n\n [0055] 如果用高速移动的线切割工件,则冷却剂可能会起泡沫,从而意外降低冷却效率。 然而,通过使用包括消泡剂的冷却剂,由于冷却剂的发泡引起的冷却效率的降低可以被最小化。 此外,当使用PH为8至11的冷却剂时,可使稀土合金的腐蚀最小化。 此外,通过使用包括防锈剂的冷却剂,可以显着降低稀土合金的氧化。 这些添加剂的量可以根据稀土合金的种类和切削条件以及其他因素适当调整。 \n\n [0056] 优选使用其上用树脂固定金刚石磨粒的金属丝。 更具体地,优选使用通过用树脂将金刚石磨粒固定在芯线(通常是钢琴线)的外表面上而获得的线。 其中,特别优选酚醛树脂,环氧树脂和聚酰亚胺树脂。 原因如下。 首先,这些树脂不仅相对于钢琴线(即硬拉线)的外表面显示出高的粘结强度,而且相对于冷却剂具有优异的润湿性(即渗透性),这将在后面描述。 其次,这种线材比通过电沉积工艺生产的线材便宜,因此降低了切割稀土合金的成本。 应该注意的是,线的芯线不必是钢琴线,而是也可以由Ni-Cr合金,Fe-Ni合金或任何其他合适的合金,W,Mo或任何其他合适的耐火材料制成。 金属或一束高强度纤维(例如尼龙纤维)。 另外,磨粒的材料也不限于金刚石,例如也可以是SiC,B,C或CBN(立方氮化硼)。 \n\n [0057] 为了获得小的加工余量的效果,线材的外径优选为0.3mm以下,更优选为0.25mm以下。 电线外径的下限被限定以便获得足够的强度。 另外,为了以足够的强度固定预定尺寸的磨粒,使用直径为约0.12mm至约0.20mm的芯线。 考虑到切削效率,磨粒的平均粒径D优选满足20μm≥D≥60μm,并且更优选满足40μm≥D≥60μm。 另外,考虑到切削效率和切削屑(污泥)冲洗效率,两个相邻磨料颗粒之间沿线行进方向的平均距离优选为磨料颗粒的平均粒径D的100%至600%。 而且,磨粒的从酚醛树脂层的表面突出的部分的平均高度优选在10μm至40μm的范围内。 只要预先制定这些规格,就可以从任何普通的电线制造商(例如,Allied Material Corp.)容易地获得这种电线。 \n\n [0058] 通过使用这种金属丝,可获得良好的切割效率和碎屑冲洗能力。 因此,即使允许线材以相对较高的速度(例如,以1,000m / min)行进,也可以加工工件。 另外,由于可以用上述冷却剂有效地冷却稀土合金,因此可以长时间连续地以良好的加工精度加工稀土合金。 当使用主要由水组成的冷却剂时,可以通过将行进速度设置成比油的情况高大约20-30%(例如,在1100 m / min至1200 m / min的范围内)来优化切削效率。 使用了冷却液。 \n\n [0059] 用于本发明的切割方法的主要由水组成的冷却剂具有低粘度(运动粘度为约1mm 2 / s)。 因此,所产生的切割碎屑冲洗能力低于通过油冷却剂(通常具有5 mm2 / s或更高的运动粘度)获得的冲洗能力。 因此,为了提高切割碎屑冲洗能力,优选在切割过程中将机加工部分保持浸没在存储在容器中的冷却剂中。 另外,冷却剂优选不仅通过其底部而且从其开口供应到容器中,使得冷却剂总是从容器的开口溢出。 \n\n [0060] 已冲入低粘度冷却液中的切屑很容易沉淀,只有少量切屑漂浮在容器的开口周围。 为了在将加工部浸入冷却剂中的状态下切割工件,需要将线材布置成在容器的开口附近穿过冷却剂行进。 因此,焊丝在几乎没有切削屑的冷却剂中行进,并且向加工部分供给了几乎没有切削屑的冷却剂。 特别地,如果还从容器开口供应冷却剂以使其总是从开口溢出,则供应到机加工部分的冷却剂可以减少切削碎屑的量。 此外,也可以利用从容器开口供应的冷却剂的流动,机械地洗去沉积在金属线上的切削屑。 每分钟溢出的冷却剂的量优选为容器体积的50%以上。 而且,从开口供应的冷却剂的量优选地大于通过容器的底部供应的冷却剂的量。 \n\n [0061] 此外,如果冷却剂(或空气)呈帘状流形成在容器开口周围,并且通过减少从容器开口溢出的冷却剂的量使溢出的冷却剂表面保持高于容器壁, 则将更多的冷却液供应到机加工部分周围。 结果,可以进一步减少冷却剂中的切削屑的量。 在该优选实施例中,在与金属丝行进方向相交的容器开口的四个侧面上形成帘状冷却剂流。 形成冷却剂流的排出压力优选在0.2MPa(即2kg / cm 2)至1.0MPa(即10kg / cm 2)的范围内,更优选在0.4MPa(即4kg / cm 2)的范围内。  cm2)至0.6 MPa(即6 kg / cm2)。 原因如下。 具体地,如果排出压力低于这些范围,则可能无法获得足够的效果。 然而,如果排出压力超过这些范围,则线材弯曲得太多以至于加工精度可能降低。 \n\n [0062] 另外,在设置成使金属丝在其上行进的多个主辊中,还优选向排布在容器的两侧以调节金属丝的行进路径的两个主辊供给冷却剂。 通过将冷却剂排放到这些主辊,可以最小化设置在主辊的表面上以具有导丝槽的有机聚合物层(例如,聚氨酯橡胶层)的温度升高。  。 另外,还可以洗去已经沉积或残留在金属丝上或导向槽中的切屑(或淤渣),从而防止金属丝行进路径偏离或金属丝从凹槽中脱轨。 \n\n [0063] 另外,通过收集包括切削过程中产生的稀土合金切削残渣的污泥和冷却液在内的脏液,并通过磁铁将稀土合金切削残渣从污泥中分选出来,冷却液可以 可以回收(例如循环使用)。 如上所述,由于主要由水组成的冷却剂具有低粘度,因此可以容易地从中挑选出切屑。 另外,通过分选稀土合金切削碎屑,可以很容易地处理冷却液废料,而不会对环境造成任何损害。 此外,切削碎屑也可以用作稀土合金的回收材料。 用于本发明的切割方法的冷却剂主要由水组成。 因此,容易减少从切削屑回收的稀土类合金中所含的碳量。 因此,可以获得可用作稀土磁体的材料的原材料。 作为从污泥中分离出切削屑的方法,可以使用本申请的申请人在日本专利申请No.2000-224481中公开的方法。 \n\n [0064] 如上所述,本发明的切割方法可以有效地用于切割通常难以加工的稀土烧结合金,例如,基于R-Fe-B的稀土烧结合金。 通过将已经通过本发明的切割方法切割的稀土合金磁化,可以获得稀土磁体。 磁化过程可以在切割过程之前或之后进行。 由基于R-Fe-B的稀土烧结合金制成的稀土烧结磁体可以有效地用作用于放置磁头的音圈电动机的材料。 本发明的切割方法优选地可用于切割如美国专利No.5,816,337中公开的基于R-Fe-B的稀土烧结磁体(或合金)。 授予本申请的申请人的美国专利号4,770,723和4,792,368。 其中,本发明的方法特别有效地适用于切割和制造以钕(Nd),铁(Fe)和硼(B)为主要成分的稀土烧结磁体(或合金)。 成分,包括一个硬的主相(富铁相),该相由四方的Nd2Fe14B金属间化合物和一个富Nd的粘性晶界相组成。 这种磁体(或合金)在本文中将被称为“钕磁体(或合金)”。 典型的钕磁铁的例子包括住友特殊金属株式会社生产的NEOMAX。 \n\n [0065] 通过采用本发明的切割方法,可以高精度和高效率地切割稀土合金。 因此,可以以高精度和高效率生产用于音圈电动机中以定位磁头的小型稀土磁体(例如,厚度为0.5mm至3.0mm)。 \n\n [0066] 在上述本发明的优选实施例中,如果设置在辊的聚合物层上以允许金属丝在其上行进的引导槽具有两个倾斜表面,其中至少一个倾斜表面形成25度或更小的角度。 如果金属丝相对于辊子的径向成45度角,则如果金属丝在这种倾斜表面之间通过,则可以防止金属丝断裂,否则在使用主要由水组成的冷却剂时可能会发生金属丝断裂。 自然地,两个倾斜表面均优选相对于辊子的径向限定25度至小于45度的角度。 特别地,在辊之间行进的金属丝优选地具有25N至35N的张力。应当注意,辊的表面是与辊的轴向平行的平面。 \n\n 实施例 \n\n [0067] 在下文中,将参照附图进一步详细地描述根据本发明的优选实施方式的切割方法。 在下面的优选实施方式中,将描述切割钕磁体烧结体以制造上述钕磁体的方法。 \n\n [0068] 将简要描述用于制备钕(Nd-Fe-B)烧结磁体的方法。 应当指出,在美国专利No.5,828,641中详细公开了一种制备稀土合金作为磁体材料的方法。 例如,以上确定的美国专利号4,770,723和4,792,368。 \n\n [0069] 首先,将金属材料精确地称重至预定的混合比,然后在真空或氩气气氛下的高频熔化坩埚中熔化。 然后将熔融的金属材料倒入水冷铸模中,从而获得具有预定组成的材料合金。 然后,将这种材料合金粉碎成平均粒径为约3μm至约4μm的细粉。 随后,将该细粉引入模具中,然后在磁场下压制和压实。 如果必要,在将细粉与润滑剂混合之后执行该压实工艺步骤。 接下来,在约1,000℃至约1,200℃的温度下对成型体进行烧结处理,从而获得钕磁铁烧结体。 之后,为了提高磁体的矫顽力,对烧结体进一步在约600℃下进行时效处理,从而完成稀土类磁体烧结体的制造工序。 烧结体可以具有例如30mm×50mm×50mm的尺寸。 \n\n [0070] 然后,加工并切割所得的烧结体,从而将烧结体分成多个薄板(在本文中有时将其称为“基板”或“晶片”)。 接下来,对烧结体的这些薄板中的每一个进行抛光和精加工以调节其形状和尺寸。 随后,为了提高长期可靠性,对该薄板进一步进行表面处理。 此后,薄板进一步经过磁化过程和测试过程,从而完成钕永磁体。 可替代地,磁化过程可以在切割过程之前进行。 \n\n [0071] 在下文中,将参照图1至图4描述根据本发明的切割工艺。  1至4。 \n\n [0072] 图。 图1是示出线锯机的示意图。 100 根据本发明的优选实施例,其可以有效地用于执行切割过程。 \n\n [0073] 线锯机 100  包括三个主辊 10 a , 10 b  和 10 c 和两个线轴 40 a  和 40 b 。 主辊 10 a ,由船只提供 30  包含冷却剂的是驱动辊,而其他主辊 10 b  和 10 c 排列在容器的两侧 30 ,是从动辊。 电线 20  从两个卷轴线轴之一中卷出时来回走动(例如, 40 a ),然后卷入另一个卷线轴(例如, 40 b )。 在这种情况下,如果卷线轴的卷线时间 40 a  设置为比其他卷线轴更长 40 b ,然后是一条崭新的电线 20  可以喂到卷线筒 40 a  同时允许电线 20  来回移动。 电线 20  优选地,以200m / min至1,500m / min的速度行进。 并且例如可以以0m / min至5m / min的速率进给新的焊丝。 \n\n [0074] 电线 20  可能被串入 150  主辊之间的直线 10 a , 10 b  和 10 c 。 定义导线的行进路径 20 ,具有用于引导金属丝的引导槽(例如,深度约为0.6mm,未示出)的有机聚合物层(例如,聚氨酯橡胶层)。 20  位于主辊的表面 10 a , 10 b  和 10 c 。 线的线间距 20  由该导向槽的间距确定。 并根据要从工件切出的板的厚度来调整导向槽的间距。 \n\n [0075] 穿越者 42 a  和 42 b  绕线架附近设有用于调节绕线位置的装置 40 a  和 40 b , 分别。 沿着从卷线轴到底线的路径 40 a  要么 40 b  到主辊 10 a ,五个导辊 44  和一个张力辊 46  每侧都有一个,以引导导线 20  并调节其张力。 钢丝的张力 20  可以根据包括切割长度,切割速度和行进速度在内的各种条件的组合来适当地改变角度。 例如电线 20  可能具有20 N至40 N的张力。 \n\n [0076] 应该指出的是,导线上的损坏 20  由于已卷入线轴中的线材部分之间的接触摩擦 40 a  要么 40 b  也会随着钢丝的张力而变化 20 。 因此,有一些机制可以减小卷线筒中卷线的张力。 40 a  要么 40 b  优选提供。 作为这样的卷取张力降低机构,可以使用日本特开平9-29607号,特开平9-314548号,特开平10-166353号或特开平10-277914号中记载的机构。 卷线筒 40 a  和 40 b  最好具有7 N至15 N的卷取张力。 \n\n [0077] 线锯机 100  进一步包括雾化器 80 a  和 80 b  用于向导线的一部分供应冷却液 20  卷在线轴上的线轴 40 a  和 40 b , 分别。 在该优选实施例中,电线 20  在其上使用树脂固定磨粒。 因此,采用雾化方法以向焊丝供应少量的冷却剂。 20  有效率的。 \n\n [0078] 如图1所示。  2,在每个这些雾化器中 80 a  和 80 b 然后,将冷却剂(例如200ml / min)和空气(例如0.4MPa)供应到喷嘴。 使用的冷却液可能与冷却液箱相同 60  如将在后面描述的那样,将其供应到机加工部分。 冷却液可能会喷在整个电线上 20  已经卷在线轴上的线轴 40 a  要么 40 b  (例如,芯外径为170毫米,高度为340毫米)。 在此示例中,冷却剂储存在冷却剂箱中 60  (稍后将描述)也用作供应给焊丝的冷却剂 20  并由排放泵泵入雾化器 80 a  和 80 b  通过管道。 当然可以提供另一个冷却液箱,用于向雾化器供应冷却液 80 a  和 80 b  并使用与供应给机加工部分的冷却剂不同的冷却剂。 \n\n [0079] 可选地,以减少导线上的损坏 20  通过冷却剂和/或要使用的冷却剂的量,可以限制喷射有冷却剂的区域。 例如,可以设计替代机构,使得卷取(和卷取)操作与横移器的操作同步地进行。 42 a  和 42 b  如图所示。 1  并且冷却液仅选择性地供应到导线各部分之间产生摩擦的区域 20 。 特别是电线 20  如图示的实施例中那样允许往复运动,在导线的各部分之间产生强烈的摩擦 20  卷在线轴上的线轴 40 a  要么 40 b  当行进方向反转时。 因此,优选至少将冷却剂供应到该区域。 \n\n [0080] 冷却剂供应装置不限于雾化器 80 a  和 80 b 如图所示。  1,但也可以是例如滴头。 在供应相对大量的冷却剂时,优选在卷线筒的下方设置用于收集和回收过量冷却剂的收集盘。 40 a  要么 40 b  如有必要。 沿着冷却剂收集路径优选地设置过滤器和/或磁体分离器,以便从收集的冷却剂中分离并去除切割碎屑。 \n\n [0081] 在上述的优选实施例中,冷却剂被喷到金属丝的部分上。 20  卷在线轴上的线轴 40 a  和 40 b 。 替代地,冷却剂也可以被供应到焊丝的另一部分。 20 ,这将要装在卷线轴上 40 a  要么 40 b  或刚刚从卷线轴上取下的线轴 40 a  要么 40 b 。 如果线的两个相邻部分中的至少一个是湿的,则可以减少对磨料颗粒的损害。 同样,通过向导线的那部分供应冷却剂 20  刚从卷线轴上取下来的 40 a  要么 40 b ,对电线造成的损坏 20  由于与导辊的导槽接触 44 ,张力辊 46  和主辊 10 a , 10 b  和 10 c  也可以减少。 \n\n [0082] 烧结体工件 50  将如上所述获得的线材放入该线锯机中 100  以以下方式。 \n\n [0083] 大量工件 50  例如,用环氧或热熔粘合剂(未示出)将它们粘结在一起。 这些工件之后 50  已经组装成多个块,这些块固定在铁质工作板上 54  带碳基板 52  插在他们之间。 工作板 54 ,工件块 50  和碳基板 52  它们也通过粘合剂(未示出)粘合在一起。 碳基板 52  通过线进行加工 20  后工件 50  已经被切割,直到工作板 54  停止下降。 这样,碳基板 52  用作保护工作板的假人 54 。 \n\n [0084] 在该优选实施例中,每个块被设计成在沿导线的方向测量时具有大约100mm的尺寸。 20  旅行。 因此,在该示例中,要通过导线实现的切割长度 20  大约是200毫米 在该优选实施例中,工件 50  如上所述,它们被布置为多个块。 但是,要在导线的行进方向上定义尺寸 20  随冷却液的动摩擦系数或行进速度而变化。 另外,工件的数量和排列 50  随每个工件的尺寸组成一个单节的变化 50 。 因此,工件 50  考虑到这些考虑,可以适当地将其布置为最佳尺寸的块。 \n\n [0085] 工件 50 通过这种方式设置的升降机,通过带有电机的电梯降低 58  并压在钢丝上 20  以便进行切割和加工。 工件下降速度 50  可以在各种条件下变化,但是例如可以在20mm / hr至50mm / hr的范围内。 \n\n [0086] 储存在冷却液箱中的冷却液 60  由排放泵抽起 62  并通过管道输送 63 。 管道 63  分支到下管 64  和上管 66 ,配有阀门 63 b  和 63 a 分别控制冷却液的流量。 下管 64  连接到下喷嘴 64 a ,它位于容器的底部 30  为了将机加工部分浸入冷却剂中。 另一方面,上管 66  不仅连接到上喷嘴 66 a , 66 b  和 66 c  用于从容器的开口处供应冷却液 30  还有两个上喷嘴 66 d  和 66 e  提供用于冷却主辊的目的 10 b  和 10 c , 分别。 \n\n [0087] 冷却液供应到容器中 30  通过上喷嘴 66 a , 66 b  和 66 c  下喷嘴 64 a 。 至少在切割过程中,冷却剂保持从容器的开口溢出 30  如图2中的箭头F所示。 1 。 从容器溢出的冷却液 30  被引导并收集到收集槽中 72  通过收集盘 70  在船下提供 30 。 收集的冷却液可以通过排放泵抽出 74  然后返回冷却液箱 60  通过循环管 76  如图 1,例如。 过滤器 78  设置在循环管的中点 76  以便从收集的冷却液中清除并清除切屑。 但是,收集方法不限于图示的方法。 可替代地,可以提供用于通过磁力将切割碎屑分类的机构(例如,参见日本专利申请No.2000-224481)。 \n\n [0088] 在下文中,将参照图2更详细地描述根据本发明的切割工艺。 3 。 \n\n [0089] 血管 30  包括辅助墙 32  在其侧壁上,与导线的行进方向相交 20 ,并在其开口附近。 这些辅助哭声 32  可以是塑料板(例如,丙烯酸板),并且被设置为位于空载电线的行进路径附近,如图1中的虚线所示。 3 。 当工件 50  降低并与电线接触 20  以便被切割 20  弯曲,将机加工部分浸入容器中的冷却液中 30  如图1中的实线所示。 3 。 在这种情况下,作为电线 20  向下弯曲,电线 20  切断辅助墙 32 ,从而形成缝隙。 线切割时 20  达到稳态后,挠曲的大小将保持不变。 结果,电线 20  将要切割工件 50  同时穿过辅助壁创建的缝隙 32 。 这样,穿过辅助壁形成的狭缝 32 ,以调节电线的行进路径 20  并有助于稳定加工精度。 \n\n [0090] 血管 30  容量约为35 I(小)。 在切割过程中,容器 30  通过下喷嘴以约30 I / min的流量供应冷却液 64 a  并以约90 I / min的速度通过上喷嘴 66 a , 66 b  和 66 c 分别使冷却剂始终从开口溢出。 为了仅向电线供应冷却液 20 ,并非总是需要使冷却液溢出,因为电线 20  如图4所示,在切割过程中弯曲。 3 。 但是,在本实施例的钕磁铁烧结体的切削中,为了提高切削屑的冲刷能力,优选采用这样的结构。 \n\n [0091] 为了提高切削屑冲洗能力,有效地减少了在加工部分附近的冷却剂中所包括的切削屑的量。 为了获得足够的冲洗能力,每分钟溢出的冷却剂的量优选为容器容积的50%以上。 此外,优选地,从容器的开口供应大量的新鲜冷却剂。 30  而不是通过其底部。 在该优选实施例中,使用主要由水组成的低粘度冷却剂。 因此,已经冲走到冷却剂中的切削屑容易沉淀。 因此,如果通过容器底部供应大量冷却液 30 ,沉淀的切削碎屑可能会意外地漂浮在机加工部分周围。 \n\n [0092] 同样,要增加从开口向焊丝供应的新鲜冷却剂的百分比 20  (即切割槽),从移动金属丝上方供应的冷却液量 20  优选增加。 也就是说,通过从容器的开口额外地供应冷却剂 30  并且,通过使冷却水从开口溢出,能够减少向加工部供给的冷却水所包含的切削屑的量。 此外,沉积在金属丝上的切割碎屑 20  还可通过从容器开口处供应的冷却剂流将其机械冲洗掉 30 。 \n\n [0093] 另外,辅助墙 32  以上所述起容器侧壁的作用 30  除了由金属丝形成的缝隙 20 因此,可以有助于保持冷却剂的表面S较高。 此外,如果在容器的开口周围形成帘状冷却剂流 30  用喷嘴 66 b  和 66 c  以便与电线的行进方向相交 20  如果溢流冷却液的表面S保持高于辅助壁 32  船的 30  通过减少从容器开口溢出的冷却液量 30 ,然后将更多量的冷却剂供应到机加工部分周围。 结果,可以进一步减少冷却剂中的切削屑的量。 形成冷却剂流的排出压力优选在0.2MPa(即2kg / cm 2)至1.0MPa(即10kg / cm 2)的范围内,更优选在0.4MPa(即4kg / cm 2)的范围内。  cm2)至0.6 MPa(即6 kg / cm2)。 原因如下。 具体地,如果排出压力低于这些范围,则可能无法获得足够的效果。 但是,如果排出压力超过这些范围,则焊丝 20  可能会弯曲得太多,从而降低加工精度。 \n\n [0094] 另外,两个主辊 10 b  和 10 c 排列在容器的两侧 30  调节电线的行进路径 20 最好还供给排出的冷却剂。 通过将冷却液排放到这些主辊上 10 b  和 10 c ,设置在主辊表面上的有机聚合物层(例如,聚氨酯橡胶层)的温度升高 10 b  和 10 c  以便有导线的导向槽 20 ,可以最小化。 此外,已沉积或残留在钢丝上的切割碎屑(或污泥) 20  或在导槽中也可被冲走,从而防止了导线的行进路径 20  偏离或电线 20  从凹槽脱轨。 此外,冲洗能力也得到提高。 要添加到主要由水组成的冷却剂中的表面活性剂的实例包括阴离子表面活性剂和非离子表面活性剂。 优选的阴离子表面活性剂包括脂肪酸衍生物,包括脂肪酸皂和环烷酸皂;酯硫酸盐,例如长链醇酯硫酸盐和油硫酸盐(例如,动物或植物油硫酸盐);以及磺酸,例如石油磺酸盐。 优选的非离子表面活性剂包括聚氧乙烯,例如聚氧乙烯烷基苯基醚和聚氧乙烯单脂肪酸酯,多元醇,例如脱水山梨糖醇单脂肪酸酯,和烷醇酰胺,例如脂肪酸二乙醇酰胺。 具体地,通过向化学溶液类型JP-0497N(由Castrol Limited生产)中添加约2wt%的水,可以将动摩擦系数调节为落入预定范围内。 \n\n [0095] 另外,优选的合成润滑剂的实例包括合成溶液类型,合成乳液类型和合成可溶类型。 其中,特别优选合成溶液类型。 更具体地说,润滑剂包括乙二醇,烷醇胺等(例如# 830  和# 870  由Yushiro Chemical Industry Co.,Ltd.生产)或Syntairo 9954 (由嘉实多有限公司生产)可以使用。 在任何情况下,通过将约2wt%至约10wt%的这种润滑剂添加至水中,可以将动摩擦系数控制在优选范围内。 \n\n [0096] 此外,通过添加防锈剂,可以防止稀土合金的腐蚀。 特别地,在切割基于R-Fe-B的稀土合金时,优选将PH设定在8至11之间。防锈剂的实例包括有机的和无机的。 优选的有机防锈剂包括羧酸盐,例如油酸酯和苯甲酸酯,以及胺,例如三乙醇胺。 优选的无机防锈剂包括磷酸盐,硼酸盐,钼酸盐,钨酸盐和碳酸盐。 \n\n [0097] 另外,诸如苯并三唑的氮化合物可以用作有色金属防腐剂。 甲醛供体如六氢三嗪可用作防腐剂。 \n\n [0098] 硅氧烷乳液可以用作消泡剂。 通过添加消泡剂,可以减少冷却剂的起泡,可以提高冷却剂的渗透性和冷却效果,并且可以使线材的温度异常升高或磨损。 20  可以最小化。 \n\n [0099] 接下来,电线的结构 20  将参考图6描述在该优选实施例中优选使用的“传感器”。 4 。 应当注意的是,线材的下半部分的结构 20  在图1中简化了单点链下方的部分。 4 。 \n\n [0100] 通过固定金刚石磨粒而获得的金属丝 24  在芯线(例如钢琴线)的外表面上 22  带有树脂层 26 ,最好用作电线 20 。 其中,特别优选酚醛树脂,环氧树脂和聚酰亚胺树脂。 这是因为这些树脂不仅相对于钢琴线(即硬拉线)的外表面显示出高粘合强度。 22  相对于上述冷却剂还具有优异的润湿性(即渗透性)。 磨粒不必一定是金刚石磨粒,而例如也可以是SiC。 \n\n [0101] 更具体地说,首选电线 20  通过将平均粒径约为45μm的金刚石磨粒固定在钢琴线的外表面上,可以得到外径约为0.24mm的颗粒。 22 ,具有约0.18mm的直径,具有酚醛树脂层 26 。 另外,考虑到切削效率和切削屑(污泥)冲洗效率,两个相邻磨料颗粒之间的平均距离 24  沿钢丝的行进方向 20  (即,与图4中的单点链平行的轴向)优选为磨粒的平均粒径D的100%至600%。 同样,磨料部分的平均高度 22  从酚醛树脂层的表面突出 26  优选在10μm至40μm的范围内。 这样的线 20  有空间 28  在磨粒之间具有足够的尺寸(有时称为“切屑袋”) 22 从而达到良好的切割效率和良好的冲洗能力。 \n\n [0102] 本发明人进行了实验,以发现用这种线锯机如何能有效地切割钕磁铁合金。 100  当使用由Allied Material Corp.生产并满足上述规格的电线作为电线时。 在卷线筒上喷洒冷却剂(例如10%的水溶液(温度为23°C)) 830  由Yushiro Chemical Industry Co.,Ltd.生产)以200 ml / min的进给速度,用最大速度为1,100 ml / min,张力为30 N,切割速率为双向的金属丝双向切割工件 40 mm / hr和新的送丝速度2 m / min。 结果,与卷线筒的情况相比 40 a  和 40 b  (金属丝长度为38 km)(不带冷却剂)喷涂,掉落的磨粒数量或剥离的树脂层减少到大约三分之一。 当动摩擦系数为0.11至0.13,表面张力为33 mN / m至36 mN / m,粘度为1 mPa·s至4 mPa·s(运动粘度为1)的冷却剂时,可获得类似的结果。  mm2 / s至4 mm2 / s),通过调整#的浓度获得 830  使用由代代化学工业有限公司生产的产品。 \n\n [0103] 本发明人还证实,当在将冷却剂喷射到金属丝的表面上之前在金属丝的表面上喷涂乙二醇时,可以显着减少树脂的剥离。 线材表面以以下方式用二醇涂覆。 \n\n [0104] 具体地,当以大约10N的卷取张力和大约0.46mm的卷取间距将线材(具有0.24mm的外径)卷取到卷线筒中时,在线材的表面上涂覆有乙二醇(例如,Ab。 聚氧化亚烷基溶液)。 \n\n [0105] 通过使用这种涂有乙二醇的电线,在使用非涂有乙二醇的电线的情况下,发生树脂剥离的可能性可以从大约20%(即382 / 1,900)降低到大约2%(即,  3/237)。 除了将新的焊丝进给速度设为3m / min以外,采用与上述相同的条件。 本发明人还证实,当用包含二元醇的润滑剂涂覆线的表面时,可以有效地减小随着线的存储环境而发生树脂剥离的可能性的变化。 在这种情况下,以以下方式评估树脂剥离。 具体而言,如果在上述条件下用于切割钕磁铁合金5小时的线材(长度约900 m)的树脂剥落了5 mm以上,则认为该线材有缺陷。 一个用去皮的树脂。 \n\n [0106] 二醇具有很高的亲水性(或保水能力),以至于阻止树脂层吸收空气中的水分。 为了有效地获得乙二醇的这种效果,优选将乙二醇直接供应到金属丝表面,但是也可以用水稀释。 在这种情况下,尽管二醇浓度可以根据涂布方法而变化,但是优选使用包含浓度为50质量%以上的二醇的水溶液。 在这种情况下,优选水溶液,以使即使冷却剂和二醇混合在一起也不会影响冷却剂的预期功能。 二醇相对于水表现出优异的溶解性和优异的润滑性。 因此,即使乙二醇与水性冷却剂混合,冷却剂也不会受到乙二醇的严重影响。 \n\n [0107] 在上述的优选实施例中,通过使用金属丝进行切割工艺,该金属丝的表面涂有包括二元醇的润滑剂,并且将冷却剂喷射到卷线筒上。 然而,即使省略了将冷却剂喷射到卷线轴上的工艺步骤,也可以通过预先用乙二醇涂布线来有效地最小化树脂剥离。 自然地,最优选同时采用乙二醇涂层和冷却剂喷雾。 \n\n [0108] 接下来,主辊的优选结构 10 a , 10 b  和 10 c  线锯机 100  将描述第一优选实施例的第一实施例。 \n\n [0109] 如果使用主要由水组成的冷却剂,则与使用油冷却剂的情况相比,线咬合率增加(即,线咬合时间更短),并且加工精度降低。 作为各种实验的结果,本发明人发现,导向槽的截面形状为 10 在聚合物层上提供的G 10 辊子的P 10 a , 10 b  和 10 c  设计成使一对倾斜表面 10 导槽S 10 G相对于径向方向限定25度至小于45度的角度(在本文中将其称为“倾斜角α”)。 10 滚筒R 10 a  如图2示意性所示。  5,电线的折断 20  可以最小化,并获得足够的加工精度。 更优选地,倾斜角是30度至35度。 \n\n [0110] 两个斜面都 10 导槽S 10 G优选地限定相对于辊的径向R在该范围内的倾斜角 10 a  如图 5 。 但是,如果两个斜面中的至少一个 10 S的倾斜角落入该范围内,则可以有效地使线咬合最小化,并获得足够的加工精度。 \n\n [0111] 在现有技术中,其中倾斜表面的结构 10 导槽S 10 如图4所示,G定义为相对于辊的径向R的倾斜角为45度以上。  6,举例。 采用这种结构以从引导槽充分有效地去除污泥。 10 G.此外,稀土合金包括引起脆性断裂的主相和引起延性断裂的晶界相,因此产生高的切削阻力。 另外,稀土合金的比重大到难以除去包含稀土合金的污泥的程度。 因此,为了更有效地去除污泥,将倾斜角设定为大于45度。 \n\n [0112] 然而,本发明人通过实验发现并证实,即使倾斜表面的倾斜角 10 S设置为大于45度,线的折断率没有降低太多,但是加工精度降低了。 在下文中,将参照图6描述该现象。 7 。 \n\n [0113] 图。 图7是示出倾斜表面的倾斜角之间的关系的曲线图 10 滚子导槽的S和钢丝的扭转角。 扭转角 106  与从辊子施加到金属丝的扭力成正比 20 。 当扭转角Ω为360度时,表明电线已经经受了一次完整的扭转。 应该注意的是,图9所示的结果是不正确的。 通过对后述的结构进行动力学模型计算,得到图7所示的结构。 另外,图9所示的结果也可以。 假设两个倾斜表面的倾斜角为7 10 S彼此相等。 \n\n [0114] 200  电线的线 20  在一对辊子(例如,两个辊子)之间以30 N(即3 kgf)的张力运行 10 b  和 10 d  如图所示。  1)直径为170毫米,以450毫米的间距排列。 电线 20  在120秒的循环时间内以2m / min的新送丝速度来回移动。 在那种情况下 20  已经打了190发子弹,导线从滚子中滚了出来 \n\n [0115] 作为各种实验的结果,发现当电线受到这样的扭转力时,在一个跨度(450mm)内发生5次全扭转(即,Ω= 1800度)。 20  穿过200条线时产生了约500次扭转。 也就是说,如果金属丝受到的扭转力导致了1,000次扭转(= 200线×5个五分之一),则大约50%的扭转累积为实际扭转。 因此,作为图3的纵轴的扭转角Ω成为纵轴。 通过将对应于由动力学模型计算估计的扭转力的扭转角乘以0.5,得到图7。 此外,基于静态扭转断裂强度测试的结果,估计当扭转角实际累积在金属丝中时 20  达到1800度(即5次完全扭转)时,导线应以10%的概率引起断裂。 \n\n [0116] 从图可以看出,  7,作为凹槽的倾斜角α 10 G增加,扭转力(或扭转角)单调减小。 假设电线 20  仅仅由于扭转力而导致断裂。 在这种情况下,如果电线 20  相对较细(例如,直径d为0.19毫米),则导线断裂 20 通过将倾斜角设置为等于或大于10度可以避免这种情况。 另外,即使电线 20  相对较粗(例如,直径d为0.25毫米),导线断裂 20  通过将倾斜角设置为等于或大于25度可以避免这种情况。 \n\n [0117] 但是根据实验结果,无论导线是否 20  相对较细或较粗,一旦倾斜角度超过45度,导线折断率就不会降低太多。 另外,如果倾斜角度为45度以上,则加工精度无意中降低。 \n\n [0118] 认为原因如下。 具体而言,随着倾斜角度的增加,引导槽的宽度10W 10 G(见图5)增加,从而使导线 20  在导槽内摆动 10 G甚至跳到相邻的导向槽 10 G.然后,施加到钢丝上的拉力或扭力 20  变得不均匀,从而在局部产生很大的压力。 结果,电线 20  快照。 另外,由于线材的存在,加工精度也会降低。 20  不能沿着凹槽行进 10 G不断。 通过使用聚氨酯橡胶层作为聚合物层来进行实验 10 P和#的大约10%的水溶液 830  由Yushiro Chemical Industry Co.,Ltd.生产的冷却剂。 另外,与第一实施方式同样地,切割了稀土类烧结磁铁工件。 \n\n [0119] 考虑到这些结果,倾斜表面 10 导槽S 10 G优选具有25度至小于45度的倾斜角。 另外,为了最大程度地减少导线的折断 20 倾斜角优选为30度以上,以使扭转力减小。 为了获得较高的加工精度,倾斜角优选为35度或更小。 此外,底部 10 导槽B 10 G的形状优选地使其曲率半径比导线的半径小一些 20 。 \n\n [0120] 上述结果是在电线上获得的 20  钢丝的张力为20N。但是,如果钢丝的张力为20 N至35 N,则可以获得类似的结果。 \n\n [0121] 已经描述了将本发明的优选实施例应用于线锯机 100  和 200 。 然而,本发明决不限于那些特定的优选实施例。 可替代地,本发明还适用于使用单卷线轴的环形线锯机(例如,参见日本特开平11-198018号公报)。 \n\n [0122] 根据上述本发明的各种优选实施例,在线锯机中使用主要由水组成的冷却剂,从而延长了用于切割稀土合金的线的寿命。 稀土合金具有硬质的主相,脆性的断裂和晶界的相,且具有延性的断裂,因此很难用线锯切割。 因此,本发明特别有效地适用于切削稀土合金。 此外,通过采用根据本发明的优选实施例的切割方法,不仅可以在切割这种稀土合金时延长线的寿命,而且还可以在诸如硅,蓝宝石, 用主要由水组成的冷却液切割石英,玻璃,钕或铁氧体。 \n\n [0123] 如上所述,根据本发明,在使用线切割机使用主要由水组成的冷却剂切割工件的情况下,可以延长线的寿命。 \n\n [0124] 本发明的切割方法可以通过使用主要由水组成的冷却剂来切割稀土合金或任何其他硬脆材料,具有较高的加工精度和降低的加工余量。 因此,材料的产量增加。 另外,由于所使用的冷却剂主要由水组成,该冷却剂是环境友好的,因此可以简化切割后的清洁过程,并且可以以降低的成本处置废物。 \n\n [0125] 特别是当本发明的切割方法用于切割稀土合金时,其效果显着,该稀土合金比诸如硅的硬而脆的材料更难加工。 稀土合金是昂贵的材料。 因此,如果可以提高这种材料的产量,则可获得巨大的利润。 而且,可以很容易地从废物中分出切割碎屑,并且可以容易地回收冷却剂。 结果,废物是环境友好的并且可以以降低的成本处置。 因此,可以降低稀土合金的加工成本。 因此,可以以低成本制造诸如用于磁头的音圈电动机的机械产品。');
INSERT INTO `os_patent_instruction_text` VALUES (12958, 22787, '【0001】\n\n【発明の属する技術分野】\n\n本発明は、新規な電気銅めっき処理用めっき液を使用した、密着性に優れた銅めっき被膜を表面に有する希土類系永久磁石の製造方法に関する。\n\n【0002】\n\n【従来の技術】\n\nNd-Fe-B系永久磁石に代表されるR-Fe-B系永久磁石やSm-Fe-N系永久磁石に代表されるR-Fe-N系永久磁石などの希土類系永久磁石は、資源的に豊富で安価な材料が用いられ、かつ、高い磁気特性を有していることから、特にR-Fe-B系永久磁石は今日様々な分野で使用されている。\n\nしかしながら、希土類系永久磁石は反応性の高い希土類元素:Rを含むため、大気中で酸化腐食されやすく、何の表面処理をも行わずに使用した場合には、わずかな酸やアルカリや水分などの存在によって表面から腐食が進行して錆が発生し、それに伴って、磁石特性の劣化やばらつきを招く。さらに、錆が発生した磁石を磁気回路などの装置に組み込んだ場合、錆が飛散して周辺部品を汚染する恐れがある。\n\n上記の点に鑑み、希土類系永久磁石の表面に耐食性被膜である銅めっき被膜を形成することが従来から行われている。銅めっき被膜は優れた耐食性を有することに加え、被膜付き回り性や有機系接着剤との接着性などに優れるといった特性を有する。\n\n一般に、銅めっき被膜を形成する方法は、電気銅めっき処理と無電解銅めっき処理に大別されるが、無電解銅めっき処理により希土類系永久磁石の表面に銅めっき被膜を形成する場合には、磁石の構成金属であるRやFeがめっき液中に溶出してめっき液に含まれている還元剤と反応し、めっき液中に溶出したRやFeの表面に銅めっき被膜の形成が進行するといった問題を防ぐためのめっき液の管理が重要である。しかしながら、これは必ずしも容易なことではない。また、無電解銅めっき処理用めっき液は一般に高価である。従って、希土類系永久磁石の表面に銅めっき被膜を形成する場合には、通常、簡易で低コストな電気銅めっき処理が採用される。\n\n電気銅めっき処理により希土類系永久磁石の表面に銅めっき被膜を形成する場合、希土類系永久磁石の酸性条件下での強い腐食性に鑑みれば、使用するめっき液はアルカリ性であることが望ましいことから、これまでシアン化銅を含むめっき液(シアン化銅浴)が汎用されてきた。しかしながら、シアン化銅浴は形成される銅めっき被膜の特性に優れるとともに、めっき液の管理が容易であるといったことから利用価値が高いものの、毒性の強いシアンを含むので環境への影響を無視することができない。そこで、近年では、ピロリン酸銅を含むめっき液(ピロリン酸銅浴)がシアン化銅浴に替わって使用されることが多い\n\nが、ピロリン酸銅浴は浴中に遊離銅イオンを多く含むため、ピロリン酸銅浴を使用して希土類系永久磁石の表面に直接に銅めっき被膜を形成しようとすると、磁石の表面において置換めっき反応が起こるといった要因などにより、密着性に優れた銅めっき被膜を形成することができないという問題がある。また、希土類系永久磁石の表面に他の金属めっき被膜を介して銅めっき被膜を形成した場合においても、磁石の磁気特性が劣化するという現象を引き起こす。\n\n上記の点に鑑み、本発明者らは希土類系永久磁石の表面に密着性に優れた銅めっき被膜を電気銅めっき処理により形成するための新たな方法を開発すべく、種々の検討を重ねる過程において、硫酸銅とエチレンジアミン四酢酸を含むめっき液に着目した。硫酸銅とエチレンジアミン四酢酸を含むめっき液は、無電解銅めっき処理用めっき液としては種々のめっき液が知られている。しかしながら、電気銅めっき処理用めっき液としては、硫酸銅とエチレンジアミン四酢酸とグリシンと塩化カリウムを含むめっき液が下記の非特許文献1において提案されているものの、このめっき液は、塩素イオンを含むので、腐食性の強い希土類系永久磁石の表面に銅めっき被膜を形成する際には適用しがたいものである。\n\n【0003】\n\n【非特許文献1】\n\n水本省三  外4名,「EDTA錯体浴からの電気銅めっきおよびその皮膜物性」,表面技術,1990年(別冊),第41巻,第2号,p156-160\n\n【0004】\n\n【発明が解決しようとする課題】\n\nそこで本発明は、新規な電気銅めっき処理用めっき液を使用した、密着性に優れた銅めっき被膜を表面に有する希土類系永久磁石の製造方法を提供することを目的とする。\n\n【0005】\n\n【課題を解決するための手段】\n\n本発明者らは、上記の点に鑑みて検討を重ねた結果、硫酸銅とエチレンジアミン四酢酸と硫酸ナトリウムと酒石酸塩を所定の組成に調整するとともに、pHを所定の範囲に調整しためっき液を使用すれば、希土類系永久磁石の表面に電気銅めっき処理により密着性に優れた銅めっき被膜を形成することができることを見出した。\n\n【0006】\n\n本発明は、上記の知見に基づいてなされたものであり、本発明の銅めっき被膜を表面に有する希土類系永久磁石の製造方法は、請求項1記載の通り、硫酸銅を0.03mol/L〜0.5mol/L、エチレンジアミン四酢酸を0.05mol/L〜0.7mol/L、硫酸ナトリウムを0.02mol/L〜1.0mol/L、酒石酸塩を0.1mol/L〜1.0mol/L含有し、pHが11.0〜13.0に調整されためっき液を使用して電気銅めっき処理により、希土類系永久磁石の表面に直接にまたは他の金属めっき被膜を介して銅めっき被膜を形成することを特徴とする。\n\nまた、請求項2記載の製造方法は、請求項1記載の製造方法において、希土類系永久磁石の表面に直接に銅めっき被膜を形成することを特徴とする。\n\nまた、請求項3記載の製造方法は、請求項1記載の製造方法において、希土類系永久磁石の表面に他の金属めっき被膜を介して銅めっき被膜を形成することを特徴とする。\n\nまた、請求項4記載の製造方法は、請求項3記載の製造方法において、他の金属めっき被膜を有機カルボン酸含有水溶液で表面処理した後に銅めっき被膜を形成することを特徴とする。\n\nまた、請求項5記載の製造方法は、請求項4記載の製造方法において、有機カルボン酸がシュウ酸であることを特徴とする。\n\nまた、請求項6記載の製造方法は、請求項4記載の製造方法において、有機カルボン酸含有水溶液の有機カルボン酸濃度が0.002mol/L以上であることを特徴とする。\n\nまた、請求項7記載の製造方法は、請求項3記載の製造方法において、他の金属めっき被膜がニッケルめっき被膜であることを特徴とする。\n\nまた、請求項8記載の製造方法は、請求項7記載の製造方法において、ニッケルめっき\n\n被膜がpHが6.0〜8.0に調整されためっき液を使用して電気ニッケルめっき処理により形成されたものであることを特徴とする。\n\nまた、本発明の電気銅めっき処理用めっき液は、請求項9記載の通り、硫酸銅を0.03mol/L〜0.5mol/L、エチレンジアミン四酢酸を0.05mol/L〜0.7mol/L、硫酸ナトリウムを0.02mol/L〜1.0mol/L、酒石酸塩を0.1mol/L〜1.0mol/L含有し、pHが11.0〜13.0に調整されていることを特徴とする。\n\nまた、本発明の銅めっき被膜を表面に有する希土類系永久磁石は、請求項10記載の通り、請求項1記載の製造方法により製造されたことを特徴とする。\n\n【0007】\n\n【発明の実施の形態】\n\n本発明の銅めっき被膜を表面に有する希土類系永久磁石の製造方法は、硫酸銅を0.03mol/L〜0.5mol/L、エチレンジアミン四酢酸を0.05mol/L〜0.7mol/L、硫酸ナトリウムを0.02mol/L〜1.0mol/L、酒石酸塩を0.1mol/L〜1.0mol/L含有し、pHが11.0〜13.0に調整されためっき液を使用して電気銅めっき処理により、希土類系永久磁石の表面に直接にまたは他の金属めっき被膜を介して銅めっき被膜を形成することを特徴とするものである。\n\n【0008】\n\n本発明の電気銅めっき処理用めっき液において、硫酸銅の含有濃度を0.03mol/L〜0.5mol/Lと規定するのは、0.03mol/L未満では銅の析出効率が悪くなる恐れがある一方、0.5mol/Lを超えると硫酸銅が沈殿しやすくなり、硫酸銅が希土類系永久磁石の表面に形成される銅めっき被膜に混入する恐れがあるからである。\n\n【0009】\n\nまた、エチレンジアミン四酢酸の含有濃度を0.05mol/L〜0.7mol/Lと規定するのは、0.05mol/L未満ではめっき液中の遊離銅イオンを十分に錯体形成できず、銅が沈殿しやすくなる恐れがある一方、0.7mol/Lを越えるとエチレンジアミン四酢酸がめっき液中に溶解しにくくなる恐れや、形成される銅めっき被膜に形成むらが生じやすくなる恐れがあるからである。\n\n【0010】\n\nまた、硫酸ナトリウムの含有濃度を0.02mol/L〜1.0mol/Lと規定するのは、0.02mol/L未満ではめっき液の導電率が低下することで銅の析出効率が悪くなる恐れがある一方、1.0mol/Lを越えると形成される銅めっき被膜に形成むらが生じやすくなる恐れがあるからである。\n\n【0011】\n\n本発明の電気銅めっき処理用めっき液において、酒石酸塩は、アルカリ性条件下における陽極の不働態化を効果的に抑制し、陽極からの銅の溶出を促す作用を発揮する。酒石酸塩としては、ナトリウム塩やカリウム塩やナトリウムカリウム塩などが例示される。その含有濃度を0.1mol/L〜1.0mol/Lと規定するのは、0.1mol/L未満ではその効果が十分に発揮されない恐れがある一方、1.0mol/Lを越えると陰極の電流効率が低下して銅の析出効率が悪くなる恐れがあるからである。\n\n【0012】\n\n本発明の電気銅めっき処理用めっき液のpHを11.0〜13.0と規定するのは、主として希土類系永久磁石の酸性条件下での強い腐食性を考慮したものであるが、11.0未満では上記の組成からなるめっき液においてエチレンジアミン四酢酸が遊離銅イオンと十分に錯体形成できず、その結果、希土類系永久磁石の表面に銅めっき被膜が形成されずに黒色の亜酸化銅膜が形成されてしまう恐れがある一方、13.0を越えると陽極の不働態化を抑制しきれない恐れがあるからである。なお、pHを調整するに際しては水酸化ナトリウムなどを使用すればよい。\n\n【0013】\n\n本発明の電気銅めっき処理用めっき液には、必要に応じて、モノエタノールアミン、ジエ\n\nタノールアミン、トリエタノールアミン、グリシン、2,2-ピピリジン、オルトフェナントロニン、ポリエチレングリコールなどの錯化剤を添加してもよい。このような錯化剤を添加すれば、めっき液中に遊離1価銅イオンが生成しても当該錯化剤はこれと錯体形成するので、遊離1価銅イオンの存在による置換めっき反応を抑制することが可能となり、密着性に劣る銅めっき被膜が希土類系永久磁石の表面に形成されることを効果的に防止することができる。\n\n【0014】\n\n本発明の電気銅めっき処理用めっき液を使用して希土類系永久磁石の表面に直接に銅めっき被膜を形成した場合、形成される銅めっき被膜は磁石の表面に対して優れた密着性を有する。\n\n【0015】\n\n本発明の電気銅めっき処理用めっき液を使用して形成される銅めっき被膜は、希土類系永久磁石の表面にニッケルめっき被膜などの他の金属めっき被膜を介して形成されてもよい。\n\n【0016】\n\n例えば、希土類系永久磁石の表面にニッケルめっき被膜を介して銅めっき被膜を形成する場合、銅めっき被膜を形成する前に、ニッケルめっき被膜を有機カルボン酸含有水溶液で表面処理することが望ましい。このような処理を行うことで、ニッケルめっき被膜と銅めっき被膜との密着性不良によるニッケルめっき被膜からの銅めっき被膜の剥離を効果的に防止することができる。\n\n【0017】\n\n有機カルボン酸含有水溶液はニッケルめっき被膜に対するエッチング処理液として機能し、その表面に変質層が形成されている場合にこれを除去して当該表面を活性化し、その表面に形成される銅めっき被膜との密着性の向上に寄与する。ニッケルめっき被膜の表面をエッチングするという目的のもとでは、塩酸や硫酸や硝酸などの無機酸を含有する水溶液を使用することもできなくはない。しかしながら、無機酸含有水溶液を使用した場合、塩素イオン(Cl-)や硫酸イオン(SO42-)や硝酸イオン(NO3-)などの腐食性の強い無機物イオンがニッケルめっき被膜の表面に残存すると、ニッケルめっき被膜やその表面に形成される銅めっき被膜の腐食の原因になることがある。また、銅めっき被膜を形成する際には、無機物イオンはニッケルめっき被膜の表面付近におけるめっき液特性に影響を及ぼして、密着性に優れた銅めっき被膜の形成を阻害することがある。有機カルボン酸は無機酸に比較してマイルドな酸であるので、有機カルボン酸含有水溶液を使用すれば、無機酸含有水溶液を使用した場合のように過度なエッチングが起こることなく、適度なエッチングが得られ、変質層のみをエッチングすることができるとともに、上記のような問題も軽減化できる。\n\n【0018】\n\n以上の効果は、pHが6.0〜8.0に調整されためっき液(例えば、特開平6-13218号公報に記載されためっき液)を使用して電気ニッケルめっき処理により形成されたニッケルめっき被膜に対してとりわけ有効である。このような中性のめっき浴を使用して電気ニッケルめっき処理により形成されたニッケルめっき被膜は、その表面にニッケル水酸化物やニッケル酸化物などからなる変質層を形成しやすく、その表面に形成される銅めっき被膜との密着性不良はこのような変質層の存在に因るものであることを本発明者らは見出している。従って、上記のような形成条件で形成されたニッケルめっき被膜の表面を有機カルボン酸含有水溶液で処理することにより、その表面に形成される銅めっき被膜との密着性向上を図ることができるのは、このようなニッケル水酸化物やニッケル酸化物などからなる変質層がニッケルめっき被膜の表面から除去されることで、当該表面が活性化されるためであると考えられる。\n\n【0019】\n\n有機カルボン酸としては、シュウ酸、酒石酸、クエン酸、コハク酸、リンゴ酸、マロン酸などが挙げられるが、中でもシュウ酸はニッケルめっき被膜に対して適度なエッチングレ\n\nートを有していることから、好適な有機カルボン酸であるといえる。有機カルボン酸含有水溶液の有機カルボン酸濃度は、0.002mol/L以上であることが望ましい。当該濃度が0.002mol/Lを下回ると十分な効果が得られない恐れがあるからである。なお、シュウ酸は水溶性の固体物質であるので、水溶液中におけるその濃度の上限は飽和水溶液における濃度ということになる。\n\n【0020】\n\n有機カルボン酸含有水溶液のpHは、過度のエッチングを防止する観点からは1以上であることが望ましい。また、十分な効果を得るためには5以下であることが望ましく、3以下であることがより望ましい(ニッケルの溶解下限pHは3.5であるので、当該pHよりも酸性側にあることが好適であるため)。\n\n【0021】\n\n有機カルボン酸含有水溶液を使用したニッケルめっき被膜の表面処理は、通常の洗浄処理を行ったニッケルめっき被膜を表面に有する希土類系永久磁石を、例えば、20℃〜40℃に調整された有機カルボン酸含有水溶液中に60秒〜240秒浸漬することにより行えばよい。有機カルボン酸含有水溶液の温度を20℃〜40℃とするのは、20℃を下回ると十分な効果が得られない恐れがある一方、40℃を超えると過度のエッチングが起こることで、有機カルボン酸含有水溶液中に多量のエッチング成分が混入して有機カルボン酸含有水溶液の劣化を早めたり、混入成分がニッケルめっき被膜の表面に付着することで、その表面に密着性に優れた銅めっき被膜が形成されることを阻害したりする恐れがあるからである。なお、上記のような表面処理を行った後は、ニッケルめっき被膜の表面に残存する有機カルボン酸を除去するために超音波洗浄を行うことが望ましい。\n\n【0022】\n\n本発明におけるめっき液を使用した電気銅めっき処理は、銅めっき被膜を希土類系永久磁石の表面に直接に形成する場合でも他の金属めっき被膜を介して形成する場合でも、通常行われる電気銅めっき処理の条件に従って行えばよいが、良好な作業性の確保などの観点からは、処理温度(液温)は30℃〜70℃、望ましくは40℃〜60℃とし、処理時間は30分〜300分とするのがよい。銅めっき被膜の膜厚は、特段限定して設定されるものではないが、耐食性被膜としての機能を十分に発揮させるためには1μm以上が望ましく、3μm以上がより望ましい。一方、希土類系永久磁石の有効体積を確保するためには、磁石の表面に直接に形成する場合は50μm以下が望ましく、30μm以下がより望ましい。また、磁石の表面に他の金属めっき被膜を介して形成する場合は30μm以下が望ましく、20μm以下がより望ましい。\n\n【0023】\n\nなお、本発明におけるめっき液を使用した電気銅めっき処理により形成された銅めっき被膜の表面に、金属めっき被膜や樹脂被膜や化成処理被膜などを積層形成することで、さらなる耐食性の付与や機能性の付与を図ってもよい。\n\n【0024】\n\n希土類系永久磁石としては、例えば、R-Co系永久磁石、R-Fe-B系永久磁石、R-Fe-N系永久磁石などで、最大磁気エネルギー積が80kJ/m3以上の磁気特性を有する公知の希土類系永久磁石が挙げられる。中でも、R-Fe-B系永久磁石は、前述のように、特に磁気特性が高く、量産性や経済性に優れている上に、被膜との優れた密着性を有する点において望ましいものである。これらの希土類系永久磁石における希土類元素(R)は、Nd、Pr、Dy、Ho、Tb、Smのうち少なくとも1種、あるいはさらに、La、Ce、Gd、Er、Eu、Tm、Yb、Lu、Yのうち少なくとも1種を含むものが望ましい。\n\nまた、通常はRのうち1種をもって足りるが、実用上は2種以上の混合物(ミッシュメタルやジジムなど)を入手上の便宜などの理由によって使用することもできる。\n\nさらに、Al、Ti、V、Cr、Mn、Bi、Nb、Ta、Mo、W、Sb、Ge、Sn、Zr、Ni、Si、Zn、Hf、Gaのうち少なくとも1種を添加することで、保磁力や減磁曲線の角型性の改善、製造性の改善、低価格化を図ることが可能となる。また、F\n\neの一部をCoで置換することによって、得られる磁石の磁気特性を損なうことなしに温度特性を改善することができる。\n\n【0025】\n\n【実施例】\n\n本発明を以下の実施例と比較例によってさらに詳細に説明するが、本発明は以下の記載に限定して解釈されるものではない。\n\n【0026】\n\n出発原料として、電解鉄、フェロボロン、RとしてのNdを所要の磁石組成に配合し、溶解鋳造後、機械的粉砕法にて粗粉砕してから微粉砕することで粒度が3μm〜10μmの微粉末を得、これを10kOeの磁界中で成形してからアルゴン雰囲気中で1100℃×1時間の焼結を行った後、得られた焼結体に対して600℃×2時間の時効処理を行い、15Nd-7B-78Feの組成を有する磁石体とした。この磁石体から3mm×20mm×40mm寸法の試験片Aと1mm×1.5mm×2mm寸法の試験片Bを切り出し、0.1mol/Lの硝酸溶液にて表面活性化を行った後、水洗して以下の実験に供した。\n\n【0027】\n\n実施例1:\n\n硫酸銅五水和物0.1mol/L、エチレンジアミン四酢酸二ナトリウム塩0.16mol/L、硫酸ナトリウム0.4mol/L、酒石酸二ナトリウム塩0.2mol/Lを含有し、水酸化ナトリウムでpHを12.3に調整した銅めっき液を使用し、液温50℃、陰極電流密度0.2A/dm2で200分間、電気銅めっき処理を行い、試験片Aと試験片Bの表面に銅めっき被膜を形成した。銅めっき被膜を表面に有する試験片A,10サンプルについて銅めっき被膜の膜厚を測定したところ、その平均値は15μmであった。また、銅めっき被膜を表面に有する試験片A,10サンプルに対してJIS(K5400)に準拠したクロスカット後にテープで剥離を行う密着性試験を行ったところ、銅めっき被膜が試験片から剥離したサンプルは存在しなかった。銅めっき被膜を表面に有する試験片B,10サンプルについて磁気特性を評価したところ、その平均値は0.98iHc/Hkであり、優れた特性を有していた。\n\n【0028】\n\n比較例1:\n\nピロリン酸銅0.2mol/L、ピロリン酸カリウム1.1mol/L、硝酸カリウム0.1mol/Lを含有し、アンモニア水でpHを8.5に調整した銅めっき液を使用し、液温50℃、陰極電流密度0.2A/dm2で60分間、電気銅めっき処理を行い、試験片Aと試験片Bの表面に銅めっき被膜を形成したが、表面全体に銅めっき被膜は形成されなかった(故に銅めっき被膜の膜厚は未測定)。このような試験片A,10サンプルに対して実施例1と同様の密着性試験を行ったところ、すべてのサンプルにおいて、試験片の表面に部分的に形成されていた銅めっき被膜が試験片から剥離した。\n\n【0029】\n\n実施例2:\n\n硫酸ニッケル六水和物0.5mol/L、クエン酸二アンモニウム0.1mol/L、ホウ酸0.2mol/L、塩化アンモニウム0.15mol/L、サッカリン0.5mol/Lを含有し、アンモニア水でpHを6.8に調整したニッケルめっき液を使用し、液温50℃、陰極電流密度0.25A/dm2で15分間、電気ニッケルめっき処理を行い、試験片Aと試験片Bの表面にニッケルめっき被膜を形成した。ニッケルめっき被膜を表面に有する試験片A,10サンプルについてニッケルめっき被膜の膜厚を測定したところ、その平均値は1μmであった。ニッケルめっき被膜を表面に有する試験片Aと試験片Bをシュウ酸0.033mol/Lを含む液温30℃の水溶液(pH1.5)に2分間浸漬してニッケルめっき被膜の表面処理を行ってからイオン交換水にて2分間超音波洗浄した後、実施例1に記載の銅めっき液を使用し、液温50℃、陰性電流密度0.2A/dm2で60分間、電気銅めっき処理を行い、ニッケルめっき被膜の表面に銅めっき被膜を形成した。ニッケルめっき被膜を介して銅めっき被膜を表面に有する試験片A,10サンプルに\n\nついて銅めっき被膜の膜厚を測定したところ、その平均値は5μmであった。ニッケルめっき被膜を介して銅めっき被膜を表面に有する試験片A,10サンプルに対して実施例1と同様の密着性試験を行ったところ、銅めっき被膜がニッケルめっき被膜から剥離したサンプルは存在しなかった。ニッケルめっき被膜を介して銅めっき被膜を表面に有する試験片B,10サンプルについて磁気特性を評価したところ、その平均値は0.95iHc/Hkであり、優れた特性を有していた。\n\n【0030】\n\n比較例2:\n\n実施例2に記載のニッケルめっき液を使用し、同様の条件で電気ニッケルめっき処理を行い、試験片Aと試験片Bの表面にニッケルめっき被膜を形成した。試験片Aと試験片Bの表面に形成されたニッケルめっき被膜に対して実施例2と同様の表面処理を行った後、比較例1に記載の銅めっき液を使用し、同様の条件で電気銅めっき処理を行い、ニッケルめっき被膜の表面に銅めっき被膜を形成した。ニッケルめっき被膜を介して銅めっき被膜を表面に有する試験片A,10サンプルについて銅めっき被膜の膜厚を測定したところ、その平均値は5μmであった。ニッケルめっき被膜を介して銅めっき被膜を表面に有する試験片A,10サンプルに対して実施例1と同様の密着性試験を行ったところ、1つのサンプルにおいて銅めっき被膜がニッケルめっき被膜から剥離した。ニッケルめっき被膜を介して銅めっき被膜を表面に有する試験片B,10サンプルについて磁気特性を評価したところ、その平均値は0.71iHc/Hkであり、磁気特性の劣化が顕著であった。\n\n【0031】\n\n【発明の効果】\n\n本発明によれば、新規な電気銅めっき処理用めっき液を使用した、密着性に優れた銅めっき被膜を表面に有する希土類系永久磁石の製造方法が提供される。', '【0001】\n\n技术领域\n\n本发明涉及一种制造稀土基永磁体的方法,其使用电镀液用于新的电镀铜电镀处理具有优异的粘合膜优异的镀铜膜。\n\n【0002】\n\n发明背景\n\n由ND-Fe-B永磁体和稀土的永磁体表示的基于R-Fe-B的永磁体如SM-Fe-N永磁体代表的R-Fe-N永磁体是资源,因为丰富而廉价使用材料并具有高磁性,R-Fe-B永磁体特别用于当今各个领域。\n\n然而,由于稀土基永磁体含有反应性稀土元素:R,在大气中易于腐蚀,并且当使用时,在没有任何表面处理的情况下,轻微的酸,碱和水分等腐蚀。腐蚀从表面进行进行,导致腐蚀锈,以及它,它导致磁体特性的恶化和变化。此外,如果锈生成的磁铁被结合到诸如磁路的装置中,则锈蚀可以散射到污染的外围部件。\n\n鉴于上述点,通常进行以形成铜电镀膜,该镀铜膜是稀土基永磁体的表面上的耐腐蚀涂层。镀铜膜具有优异的耐腐蚀性,并且具有特征,使得其具有优异的涂层与涂层和对有机粘合剂的粘附性。\n\n通常,形成镀铜膜的方法大致被分为无电镀铜处理和无电镀铜处理,而是通过无电镀铜处理在稀土永磁体的表面上形成铜电镀膜,R和Fe ,这是在电镀溶液中洗脱的磁体的组成金属,与电镀溶液中包含的还原剂反应,并在电镀溶液中洗脱的R和Fe的表面上的镀铜膜的形成。电镀管理解决方案以防止它们很重要的问题。但是,这并不一定容易。另外,用于无电镀铜处理的电镀液通常是昂贵的。因此,在在稀土基永磁体的表面上形成铜电镀膜的情况下,通常采用简单而低成本的电镜电镀工艺。\n\n当通过电镀铜电镀工艺在稀土基永磁体的表面上形成铜电镀膜时,考虑到在稀土基永磁体的酸性条件下的强腐蚀,待使用的电镀液优选碱性。到目前为止,已广泛使用含氰化铜氰化铜的电镀溶液(氰化浴)。然而,镀铜铜浴在形成的铜电镀涂层的性质方面具有优异的,并且该值很高,因为它易于管理电镀液,但值高,但它含有强烈毒性的青色,无视对环境的影响。不能。因此,近年来,含铜焦磷酸盐的电镀溶液(焦磷酸盐浴)通常用于代替氰化铜浴\n\n然而,由于铜磷酸浴在浴中含有大量的游离铜离子,因此可以使用铜离子铜离子在稀土永磁体的表面上形成铜镀膜,更换磁铁的表面。存在粘附性优异的铜电镀膜不能通过诸如反应的因素形成的问题。此外,即使当通过另一金属镀膜形成稀土基永磁体的表面上的铜电镀膜时,它也会导致磁体劣化的磁性变化的现象。\n\n鉴于上述点,本发明人重复各种研究以开发一种通过电镀电镀处理在稀土基永磁体的表面上形成优异的镀铜膜的新方法。在含铜硫酸铜的电镀溶液处在硫酸铜和乙二胺四乙酸的情况下,乙二胺四乙酸。含铜硫酸铜和乙二胺四乙酸的电镀溶液称为无电镀铜处理的电镀溶液。然而,尽管在包括硫酸铜和乙二胺四乙酸,甘氨酸和氯化钾的以下非专利文献1中提出了用于电铜电镀处理的电镀解决方案,但是该电镀溶液含有氯离子,因为在表面上形成铜电镀膜在高度腐蚀性的稀土永磁体中,旨在应用。\n\n【0003】\n\n[非专利文献1]\n\n七十三个Motohiro,“来自EDTA复合浴的电镀和薄膜性能”,表面技术,1990(单独的体积),Vol.41,2,P156-160\n\n【0004】\n\n本发明要解决的问题\n\n因此,本发明的目的是提供一种制造稀土基永磁体的方法,其具有使用电镀液用于新型电镀铜电镀处理的粘合性优异的镀铜膜。\n\n【0005】\n\n[解决问题的手段]\n\n考虑到本发明人,考虑到上述要点,由于研究,硫酸铜和乙二胺四乙酸和硫酸钠和酒石酸盐当调节到预定组合物时,将pH调节到预定范围,可以通过在稀土基永磁体的表面上通过电蓄电器电镀处理来形成优异的镀铜膜。我发现它。\n\n【0006】\n\n本发明已经基于上述发现,如权利要求1所述的制造具有本发明的镀铜膜的稀土永磁体的制造方法如权利要求1所述的制造方法如权利要求1所述。 0.03mol / l 0.5 mol / l,乙二胺四乙酸0.05 mol / l至0.7 mol / l,硫酸钠0.02 mol / l至1.0mol / l,酒石酸盐0.1mol / l至1.0mol / l,将pH调节至11.0至13.0,并使用电镀液通过电镀电镀处理通过电镀电镀处理通过或通过其他金属镀膜。它通过形成铜电镀膜。\n\n3.根据权利要求2所述的制造方法的特征在于,在根据权利要求1所述的制造方法中直接形成铜电镀膜在稀土永磁体的表面上。\n\n4.根据权利要求3所述的制造方法的特征在于,在根据权利要求1所述的制造方法中,通过另一种金属镀膜在稀土基永磁体的表面上形成铜电镀膜。\n\n5.根据权利要求4所述的制造方法的特征在于,在根据权利要求3所述的制造方法中,用含有有机羧酸水溶液进行表面处理的另一种金属镀膜,形成铜电镀膜。\n\n5.根据权利要求5所述的制造方法的特征在于,在根据权利要求4所述的制造方法中,有机羧酸是草酸。\n\n7.根据权利要求6所述的制造方法的特征在于,在根据权利要求4的制造方法中,含有有机羧酸水溶液的有机羧酸浓度为0.002mol / L或更高。\n\n8.根据权利要求7所述的制造方法的特征在于,在根据权利要求3所述的制造方法中,另一种金属镀膜是镀镍膜。\n\n9.根据权利要求8所述的制造方法是根据权利要求7所述的制造方法中的镀镍。\n\n薄膜的特征在于将pH调节至6.0至8.0,并且电镀溶液用于通过电镍镀形成。\n\n此外,根据本发明的用于电镀电镀处理的电镀液如权利要求9中所述,0.03mol / L至0.5mol / L,乙二胺四乙酸为0.05mol / L至0.7mol / L,硫酸钠9.如权利要求9.0.02mol / L至1.0mol / L,酒石酸盐其特征在于0.1mol / L至1.0mol / L含量,并将pH调节至11.0至13.0。\n\n另外,如权利要求10所述的权利要求10所述的制造方法制造具有本发明的镀铜膜的稀土永磁体。\n\n【0007】\n\n发明内容\n\n制备具有本发明镀铜涂层的稀土永磁体的方法为0.03mol / L至0.5mol / L,0.03mol / L至0.05mol / L至0.7mol / L的硫酸盐,0.02硫酸钠。mol / l至1.0mol / l,酒石酸盐0.1mol / l至1.0mol / l,将pH调节至11.0至13.0,并使用电镀液通过电镀电镀处理通过电镀电镀处理通过或通过其他金属镀膜。它通过形成铜电镀膜。\n\n【0008】\n\n在本发明的电镀电镀处理的电镀溶液中,硫酸铜的含量为0.03mol / L至0.5mol / L,如果小于0.03mol / L,则铜的沉淀效率劣化。如果超过0.5mol / L,则可能沉淀硫酸铜,并且硫酸铜可以掺入形成在稀土永磁体的表面上形成的铜电镀膜中。\n\n【0009】\n\n此外,乙二胺四乙酸的含量定义为0.05mol / l至0.7mol / L,在电镀溶液中不能充分络合镀液中的游离铜离子,并且铜可能沉淀。虽然有一个超过0.7mol / L的风险,乙二胺四乙酸可能难以溶解在电镀溶液中,并且可能发生形成的铜电镀膜。\n\n【0010】\n\n另外,当硫酸钠的含量为0.02mol / l至1.0mol / l时,如果电镀溶液的电导率低于0.02mol / L,则铜沉积效率可能会劣化。这是因为薄膜电镀膜在超过1.0mol / L时,可以在形成的铜镀膜中容易地产生形成。\n\n【0011】\n\n在用于本发明的电镀镀处理的电镀液中,酒石酸盐,有效地抑制碱性条件下阳极的水分,并表现出促使阳极洗脱铜的作用。举例说明酒石酸盐和钾盐和钾盐的实例。。祖先当含量浓度为0.1mol / l至1.0mol / l时,如果它小于0.1mol / L,则不充分表现出效果,如果超过1.0mol / L,则阴极的电流效率降低。这是因为铜的沉积效率可能更差。\n\n【0012】\n\n根据本发明的电蓄电池电镀处理的电镀液的pH主要是11.0至13.0主要考虑稀土基永磁体的酸性条件下的强腐蚀性,但上述组成小于11.0。乙二胺在电镀溶液中的游离铜离子中不能充分形成四乙酸,结果,在稀土基永磁体的表面上形成铜镀膜而不形成铜镀膜。在另一方面,如果超过13.0,则可能无法抑制阳极的水生。此外,氢氧化钠等可用于调节pH。\n\n【0013】\n\n如有必要,必要,必要,单乙醇胺,迪\n\n可以加入络合剂,如甘油胺,三乙醇胺,甘氨酸,2,2-吡啶,正交,聚乙二醇等。如果加入这样的络合剂,即使在电镀溶液中形成游离的单价铜离子,也可以通过此形成络合剂,因此通过游离的单价铜离子抑制取代的电镀反应。它是有效的防止铜电镀薄膜不在稀土永磁体的表面上粘附。\n\n【0014】\n\n当使用用于本发明的电镀电镀处理的电镀液将镀铜膜直接形成在稀土永磁体的表面上时,形成的镀铜膜在磁体的表面上具有优异的粘附性。\n\n【0015】\n\n使用用于本发明的电镀铜电镀处理的电镀液形成的镀铜膜可以通过诸如稀土基永磁体的表面上的镍镀膜,例如镍镀膜形成。\n\n【0016】\n\n例如,在通过稀土基永磁体的表面上通过镍镀膜形成镀铜膜的情况下,希望用含有含有有机羧酸的水溶液用镍镀膜进行表面处理形成镀铜膜。通过执行这种处理,可以有效地防止由于镀镍膜和镀铜膜之间的粘附破坏而从镀镍膜的剥离。\n\n【0017】\n\n含有有机羧酸的水溶液用作镍镀膜的蚀刻处理溶液,并且当在其表面上形成改变的层时,表面被激活,并且在其表面上形成的镀铜膜有助于改善粘附。在蚀刻镀镍涂层的表面的目的,不可能使用含有无机酸的水溶液,例如盐酸,硫酸或硝酸。但是,当使用无机酸的水溶液时,氯离子(CL-和硫酸根(所以42-和硝酸根(没有3-当诸如诸如腐蚀性强无机离子留在镍镀膜的表面上时,它可能导致在其表面上形成的镀铜膜的镀镍膜或腐蚀。另外,在形成铜电镀膜时,无机离子可能影响镍镀膜表面附近的电镀溶液特性,并且可以抑制粘合性优异的镀铜膜的形成。由于与无机酸相比,有机羧酸是一种温和的酸,因此使用有机羧酸水溶液用于使用含有无机酸的水溶液的水溶液而不过度蚀刻。可以获得,仅限可以蚀刻改变的层,可以减少上述问题。\n\n【0018】\n\n上述效果调节至6.0至8.0,并且对于使用柱溶液(例如,JP-A-6-13218中描述的制剂)通过电镍镀形成的镀镍膜。特别有效。通过使用这种中性镀浴的电镀镀镍处理形成的镀镍膜易于形成由表面上的氢氧化镍或氧化镍组成的改性层,并且在本发明人发现本发明人发现铜的粘附性缺陷差电镀膜是由于这种改性层的存在。因此,通过用如上所述在形成条件下形成的镀镍膜的表面,通过含有有机羧酸的水溶液,可以改善在表面上形成的镀铜膜之间的粘合。它被认为是通过从镀镍涂层的表面除去这种氢氧化镍或氧化镍的改性层来激活表面。\n\n【0019】\n\n有机羧酸的实例包括草酸,酒石酸,柠檬酸,琥珀酸,苹果酸,丙酸,丙酸等,但其中,草酸是中等蚀刻的镀镍膜\n\n可以说它是合适的有机羧酸,因为它具有托盘。含有有机羧酸水溶液的有机羧酸浓度优选为0.002mol / L或更高。这是因为如果浓度小于0.002摩尔/升,则可能无法获得足够的效果。由于草酸是水溶性固体物质,其在水溶液中浓度的上限是饱和水溶液中的浓度。\n\n【0020】\n\n从预防过度蚀刻的观点来看,希望含有有机羧酸水溶液的pH是一种或多种。此外,希望为5或更小以获得足够的效果,更优选为3或更小(镍的溶出极限为3.5,因此它优选在酸性侧而不是pH值。因为有。\n\n【0021】\n\n使用有机羧酸水溶液的镍镀层的表面处理是稀土基永磁体,其具有在表面上进行的镀镍涂层,例如,将有机羧酸调节至20℃至40° C.它可以在含有含有的水溶液中浸入60秒至240秒来进行。含有有机羧酸水溶液的温度为20℃至40℃,而低于20℃,含有足够的效果不能获得足够的效果,而当它超过40℃时发生过度蚀刻。,有机碳。通过将大量蚀刻组分混合在含酸水溶液中并粘附到镀镍膜的表面,并粘附在镀镍的表面上,并粘附在镀镍的表面上,并粘附在镀镍的表面上具有优异的粘附性。薄膜。存在粘合性优异的铜电镀涂层,因为它可以被抑制形成。另外,在进行如上所述的表面处理之后,希望进行超声波清洁以除去残留在镀镍膜的表面上的有机羧酸。\n\n【0022】\n\n使用在本发明中使用电镀液的电镀铜电镀处理通常通过其他金属镀膜进行,即使在稀土永磁体的表面上形成铜电镀涂层。虽然需要根据处理条件,从良好的可加工性的观点来看,加工温度(液体温度)为30℃至70℃,优选40°C至60°C,加工时间为30分钟至300。尽管铜镀膜的膜厚度尤其不设定,但是理想的1μm以上,以充分地表现为耐腐蚀膜,更优选为3μm或更大。另一方面,为了确保稀土基永磁体的有效体积,当直接在磁体的表面上形成时,需要50μm或更小,更优选为30μm或更小。另外,当经过另一种金属镀膜形成磁体的表面时,需要30μm或更小,更理想地是20μm或更小的。\n\n【0023】\n\n另外,通过层压金属镀膜,树脂涂层和化学处理涂层等,通过层压金属镀膜,树脂涂层和化学处理涂层等。您可以\n\n【0024】\n\n作为稀土基永磁体,例如,R-Co-B基永磁体,R-Fe-B基永磁体,R-Fe-Nn系统永磁体和最大磁能产品为80 KJ / M.3可以提及具有上述磁特性的已知稀土永磁体。其中,优选R-Fe-B基永磁体,因为它们具有优异的粘附性,具有优异的磁特性,并且如上所述的大规模生产率和经济性优异。。这些稀土永磁体中的稀土元素(R)是Nd,Pr,Dy,Dy,Ho,Tb,Sm和La,Ce,Gd,ER,欧盟,Tm,Yb,Lu中的至少一种,是理想的包括至少一个Y.\n\n另外,尽管它通常足够的RS,两个或更多个混合物(例如混合金属,Dijim等)可以用于实际使用,但为方便起见。\n\n此外,通过添加Al,Ti,V,Cr,Mn,Bi,Nb,Ta,Mo,W,Sb,Ge,Sn,Zr,Ni,Si,Zn,HF和Ga,也是可能的提高胁迫力的大规模和退磁曲线,提高可制造性,降低价格。另外,F.\n\n通过用CO代替E的一部分,可以在不影响所得磁体的磁性的情况下提高温度特性。\n\n【0025】\n\n【例子】\n\n将通过以下实施例和比较例更详细地描述本发明,但是本发明不被解释为将本发明限制在以下描述中。\n\n【0026】\n\n作为原料,Nd作为电解铁,FerroOboron,R被掺入所需的磁体组合物中,并且在溶解浇铸后,通过研磨和破碎在机械研磨方法之后通过研磨和破碎粒度为3μm至10μm。在形成中10kOE磁场,然后在1100℃下烧结1小时,在氩气氛中,在600℃下进行2小时,得到烧结体的2小时。磁体具有15nd-7b-78fe的组成。 3mm×20mm×40mm尺寸为3mm×20mm×40mm××1mm×1.5mm×2mm×1mm×1.5mm×2mm×的试验片B×2mm×2mm×的0.1 mol / l硝酸溶液,然后用水洗涤后用水洗涤。它经过实验。\n\n【0027】\n\n例1:\n\n0.1mol / L硫酸铜五水合物,乙二胺四乙酸盐0.16mol / L,0.4mol / L硫酸钠,0.2mol / L的酒石酸盐,并使用铜镀液氢氧化钠调节pH至12.3,液体温度50°C ,阴极电流密度0.2A / DM2在200分钟时,进行电渗透电镀,并在试验片A和试验片B的表面上形成镀铜膜。测量铜电镀膜的膜厚度的测试片A和10个样品在表面上具有铜电镀涂层,平均值为15μm。另外,当在试验片A和10样品的表面上的铜电镀膜的表面上进行胶带时,在交叉切割后进行粘合试验以用胶带剥离,铜电镀涂层剥离从试验片。没有样品。当评估磁性的测试片B和10样品在表面上具有铜电镀涂层时,平均值为0.98IHC / HK,具有优异的特性。\n\n【0028】\n\n比较例1:\n\n焦磷酸铜0.2mol / L,1.1mol / L焦磷酸钾,0.1mol / L硝酸钾,并使用氨水调节至8.5的铜电镀溶液,液体温度为50℃,阴极电流密度为0.2 a / DM.2在60分钟时,进行电渗透电镀,在试验片A和试验片B的表面上形成铜镀膜,但是在整个表面上形成铜电镀膜(由于铜的膜厚度而形成电镀膜不是测量)。在这种测试条A和10个样品中进行类似于实施例1的这种粘附试验,并且在所有样品中,部分地形成在样品的表面上的铜电镀膜来自I剥离的试样。\n\n【0029】\n\n例2:\n\n硫酸镍六水合物0.5mol / L,0.2mol / L柠檬酸盐,0.2mol / L,0.2mol / L硼酸,0.15mol / L氯0.15mol / L,Saccharin 0.5mol / L和pH与氨水至6.8使用调节的镍镀液,液体温度50°C,阴极电流密度为0.25A / DM2在15分钟内,进行电镀镍,并在试验片A和试验片B的表面上形成镀镍膜。测量镀镍膜的膜厚度的测试片A和10个样品在表面上具有镀镍膜,并且平均值为1μm。用试验片A和试验片B的镀镍膜浸入0.033mol / L的草酸水溶液(pH 1.5)中,并在超声波清洗后进行镀镍膜的表面处理2分钟 -交换水,使用根据实施例1的铜电镀液,液体温度为50℃,负电流密度为0.2a / dm2连接电镀电镀处理60分钟,在镀镍膜的表面上形成镀铜膜。试验件A,10个样品通过镍镀膜在表面上具有铜电镀涂层\n\n当测量镀铜膜的膜厚度时,平均值为5μm。当在通过镍镀膜上在表面上的试验片A和10个样品上进行与实施例1相同的粘合试验时,存在从镀镍涂层剥离的样品镀膜。它不是。当通过镍镀膜评估测试片B和10个在表面上具有铜电镀膜的10个样品时,平均值为0.95IHC / HK,具有优异的特性。\n\n【0030】\n\n比较例2:\n\n使用实施例2中描述的镀镍溶液,在相同的条件下进行电镍电镀处理,并在试验片A和试验片B的表面上形成镀镍膜。在与在测试件A的表面上形成的镀镍膜和试验片B上的镀镍膜相同的表面处理之后,使用比较例1中描述的铜电镀液,并且使用电气条件相同的条件。进行铜电镀以在镀镍膜的表面上形成铜电镀膜。测量铜电镀膜的膜厚度,用于测试件A和10个样品通过镍镀膜在表面上具有铜电镀膜,平均值为5μm。当在测试件A和10个样品上通过镀镍膜进行镀铜膜进行类似于实施例1的粘附试验时,通过镀镍膜在一个样品中从镀镍膜剥离的镀铜膜。。当评估磁性的测试片B和10个样品通过镍镀膜在表面上具有铜电镀膜的样品时,平均值为0.71IHC / HK,并且磁性的劣化显着。\n\n【0031】\n\n【发明效果】\n\n根据本发明,提供了一种制造稀土永磁体的方法,其使用电镀液用于新的电镀铜电镀处理具有优异的粘合膜优异的镀铜膜。');
INSERT INTO `os_patent_instruction_text` VALUES (12959, 22788, '【0001】\n\n【発明の属する技術分野】\n\n本発明は、物品の表面材質や表面性状に依存することなくその表面に均一で緻密な電気めっき被膜を優れた密着性でもって形成する方法に関する。\n\n【0002】\n\n【従来の技術】\n\n装飾性、耐候性、帯電防止などのための表面導電性、電磁波遮断性、抗菌性、耐衝撃性などを物品に付与する目的で、その表面に金属被膜を形成することが従来から行われている。金属被膜を形成するための方法は各種あるが、中でも、電気めっき処理による電気めっき被膜形成方法は、大量生産にも適していることから広く実用化されている。\n\n【0003】\n\nしかしながら、物品表面に電気めっき被膜を形成するためには、物品表面に導電性が必要となる。従って、プラスチック、木材、紙、ガラス、セラミックス、ゴム、コンクリートなどの非導電性材質からなる物品表面に直接的に電気めっき被膜を形成することはできない。また、マグネシウムやアルミニウムやチタンなどの金属材質からなる物品(携帯電話やノート型パーソナルコンピュータの筐体など)表面に金属被膜を形成したい場合があるが、マグネシウムは金属の中でも特に卑な金属である。従って、その表面に電気めっき被膜を形成しようとしても、めっき浴に浸漬した途端に急激な置換めっき反応が起こってしまうので、良質の電気めっき被膜を形成することは困難である。アルミニウムやチタンは非常に酸化しやすい金属であり、通常、その表面は非常に緻密な金属酸化膜で覆われている。従って、これらの金属はイオン化傾向が低いにもかかわらず、その表面の電位が高くなっているので、電気めっき処理を行うことは困難である。表面に存在する金属酸化膜を除去すれば、電気めっき被膜を形成することは可能となるが、特殊なエッチング技術が必要となる上に、金属酸化膜を除去した後は、再び金属酸化膜が生成するまでに電気めっき処理を行わなくてはならないといった時間的制約が発生するので、実用上問題があるといわざるを得ない。水酸化ナトリウムと水酸化亜鉛を含有する溶液に浸漬することで、強アルカリ環境下にてエッチングを行うと同時に亜鉛の置換めっき被膜を形成する所謂ジンケート処理をした後、無電解めっき被膜を形成する工程を介して電気めっき処理を行う方法\n\nもあるが全体工程が複雑である。\n\nまた、木製バットやレンガやダイカスト品などのように表面に空孔部や微細溝や凹凸を有する物品表面に均一な電気めっき被膜を形成しようとした場合には、物品表面に対して導電性を如何に付与するかという点とともに物品表面の平滑性を如何に確保するかという点を解決しなければならない。\n\nまた、マグネシウムなどの金属のように腐食性の高い材質からなる物品は、電気めっき処理を行った際に腐食することがあるので、このような物品に対して電気めっき被膜を形成することには困難が伴う。\n\n【0004】\n\n【発明が解決しようとする課題】\n\n公知の技術を利用して上記の問題を解決しようとした場合、特開昭61-210183号公報に記載された、物品表面に金属粉末を分散させた樹脂からなる樹脂被膜を形成した後、この樹脂被膜表面に無電解めっき被膜を形成する方法を採用し、こうして形成される無電解めっき被膜表面に電気めっき被膜を形成する方法が考えられる。しかしながら、無電解めっき被膜は、めっき液中の金属イオンを還元剤の作用により還元して被めっき物表面に金属析出させることで形成される被膜であるので、被めっき物との密着性に劣るとともに成膜効率の点においても劣る。パラジウム触媒や白金触媒を使用して成膜効率を向上させる方法もあるが、この方法ではコストアップが避けられない。また、無電解めっき被膜に含まれる還元剤由来の不純物がその表面への電気めっき被膜の形成に悪影響を及ぼすことが否定できない。\n\nそこで本発明は、物品の表面材質や表面性状に依存することなくその表面に均一で緻密な電気めっき被膜を優れた密着性でもって形成する方法を提供することを目的とする。\n\n【0005】\n\n【課題を解決するための手段】\n\n上記の点に鑑みて本発明者らが種々の検討を行ったことにより完成された本発明の物品表面への電気めっき被膜の形成方法は、請求項1記載の通り、物品表面に、平均粒径が2μm〜30μmの第1金属の粉末を分散させた樹脂からなる体積抵抗率が1×104Ω·cm以上の非導電性被膜を形成した後、この非導電性被膜形成物品を第1金属より貴な電位を有する第2金属のイオンを含む溶液に浸漬することで非導電性被膜表面に第2金属の置換めっき被膜を形成し、さらに置換めっき被膜表面に第3金属の電気めっき被膜を形成することを特徴とする(但し物品として希土類系永久磁石は除く)。\n\n  また、請求項2記載の形成方法は、請求項1記載の形成方法において、樹脂被膜中における第1金属の粉末の分散量が50重量%〜99重量%であることを特徴とする。\n\n  また、請求項3記載の形成方法は、請求項1記載の形成方法において、樹脂被膜の膜厚が1μm〜100μmであることを特徴とする。\n\nまた、請求項4記載の形成方法は、請求項1乃至3のいずれかに記載の形成方法において、第1金属が亜鉛で第2金属がニッケルであることを特徴とする。\n\nまた、請求項5記載の形成方法は、請求項1乃至3のいずれかに記載の形成方法において、第1金属がニッケルで第2金属が銅であることを特徴とする。\n\nまた、請求項6記載の形成方法は、請求項1乃至5のいずれかに記載の形成方法において、第2金属と第3金属が同じ金属であることを特徴とする。\n\nまた、請求項7記載の形成方法は、請求項6記載の形成方法において、置換めっき被膜を形成する工程と電気めっき被膜を形成する工程を一つのめっき浴において行うことを特徴とする。\n\nまた、請求項8記載の形成方法は、請求項1乃至7のいずれかに記載の形成方法において、置換めっき被膜の膜厚が0.05μm〜2μmであることを特徴とする。\n\nまた、本発明の物品は、請求項9記載の通り、請求項1乃至8のいずれかに記載の形成方法により表面に電気めっき被膜が形成されていることを特徴とする(但し希土類系永久磁石は除く)。\n\nまた、本発明の物品表面への置換めっき被膜の形成方法は、請求項10記載の通り、物\n\n品表面に、平均粒径が2μm〜30μmの第1金属の粉末を分散させた樹脂からなる体積抵抗率が1×104Ω·cm以上の非導電性被膜を形成した後、この非導電性被膜形成物品を第1金属より貴な電位を有する第2金属のイオンを含む溶液に浸漬することで非導電性被膜表面に第2金属の置換めっき被膜を形成することを特徴とする(但し物品として希土類系永久磁石は除く)。\n\nまた、本発明の物品は、請求項11記載の通り、請求項13記載の形成方法により表面に置換めっき被膜が形成されていることを特徴とする(但し希土類系永久磁石は除く)。\n\n【0006】\n\n【発明の実施の形態】\n\n本発明の物品表面への電気めっき被膜の形成方法は、物品表面に第1金属の粉末を分散させた樹脂からなる樹脂被膜を形成した後、この樹脂被膜形成物品を第1金属より貴な電位を有する第2金属のイオンを含む溶液に浸漬することで樹脂被膜表面に第2金属の置換めっき被膜を形成し、さらに置換めっき被膜表面に第3金属の電気めっき被膜を形成することを特徴とするものである。\n\n【0007】\n\n本発明の物品表面への電気めっき被膜の形成方法においては、物品表面に第1金属の粉末を分散させた樹脂からなる樹脂被膜を形成し、次に、この樹脂被膜表面やその近傍に存在する第1金属の粉末を起点とする置換めっき反応を利用することで密着性に優れた第2金属の置換めっき被膜を樹脂被膜表面全体に形成する。これにより結果として物品表面全体に導電性が付与されることになるので、置換めっき被膜表面に均一で緻密な第3金属の電気めっき被膜を優れた密着性でもって形成することが可能となる。従って、物品の表面材質や表面性状に依存することなく、プラスチック、木材、紙、ガラス、セラミックス、ゴム、コンクリート、金属などのあらゆる材質からなる物品表面に均一で緻密な電気めっき被膜を優れた密着性でもって形成することができる。\n\n以下、本発明の物品表面への電気めっき被膜の形成方法について、順を追って説明する。\n\n【0008】\n\n工程1:\n\nまず、物品表面に第1金属の粉末を分散させた樹脂からなる樹脂被膜を形成する。樹脂被膜の主体となる樹脂としては、例えば、熱硬化性樹脂を使用することができる。具体的には、フェノール樹脂、エポキシ樹脂、メラミン樹脂、アクリル樹脂、ポリエステル樹脂、ウレタン樹脂、ポリイミド樹脂、スチレンアクリル樹脂およびこれらの混合樹脂などが挙げられる。\n\n【0009】\n\n樹脂被膜中に分散される第1金属の粉末の種類に特段の制限はないが、後の工程において置換めっき反応を起すためには、第1金属は第2金属よりも卑な電位を有することが必須となる。従って、第1金属は第2金属との電位差を考慮して適宜選択される。第1金属と第2金属の組合せの具体例としては、第1金属が亜鉛で第2金属がニッケルの組合せや、第1金属がニッケルで第2金属が銅の組合せなどが挙げられる。\n\n【0010】\n\n第1金属の粉末を分散させた樹脂からなる樹脂被膜は、非導電性被膜とする。マグネシウムなどの金属のように腐食性の高い材質からなる物品表面に形成する樹脂被膜は非導電性被膜であることが望ましい。置換めっき処理や電気めっき処理を行った際に樹脂被膜表面が腐食したとしても、また、樹脂被膜表面に置換めっき被膜を介して形成された電気めっき被膜にピンホールや傷などの欠陥が生じ、当該欠陥を通じるなどして樹脂被膜表面が腐食したとしても、樹脂被膜内部を通して腐食が物品表面まで進行してしまうといったことを防止することができるからである。\n\n【0011】\n\n第1金属の粉末を分散させた樹脂からなる非導電性被膜は、例えば、第1金属の粉末を分散させた非導電性の樹脂自体を、また、必要であればこのような樹脂を有機溶剤を用いて希釈して調製した溶液を処理液として物品表面にスプレー塗装したり、処理液中に物品を\n\n浸漬して浸漬塗装を行ったりした後、これを乾燥させることにより形成する。金属粉末を分散させた非導電性の樹脂は市販されているものもあり、簡便に入手することができる。第1金属の粉末を分散させた樹脂が導電性であっても、有機分散媒を添加して個々の金属粉末を均一に分散させて隔離することで処理液を非導電性のものとすることもできる。この場合、有機分散媒としては、アニオン性分散媒(脂肪族系多価カルボン酸、ポリエーテルポリエステルカルボン酸塩、高分子ポリエステル酸ポリアミン塩、高分子量ポリカルボン酸長鎖アミン塩など)、非イオン性分散媒(ポリオキシエチレンアルキルエーテルやソルビタンエステルなどのカルボン酸塩やスルフォン酸塩やアンモニウム塩など)、高分子分散媒(水溶性エポキシのカルボン酸塩やスルフォン酸塩やアンモニウム塩など、スチレン-アクリル酸共重合物、ニカワなど)などが金属粉末との親和性やコストの点から好適に使用される。また、非導電性被膜を形成することができる処理液であれば、それ自体が導電性であってもよい。処理液の調製に際しては、ボールミルやアトライターやサンドミルなどの分散機を適宜使用することができる。\n\n【0012】\n\n第1金属の粉末を分散させた樹脂からなる非導電性被膜は、たとえ被膜表面が腐食したとしても、被膜内部を通じて腐食が物品表面まで進行してしまうことを防止するので、それ自体が物品に対して耐食性を付与するという効果を有する。この効果には、被膜が有する自己修復作用(第1金属の腐食化合物(第1金属が亜鉛の場合にはZnCl2·4Zn(OH)2やZnOなどが該当する)の生成や樹脂の膨潤による体積増加により被膜にピンホールや傷などの欠陥が存在しても当該欠陥を埋没させてしまうという作用)や第1金属が有する犠牲防食作用なども寄与しているものと考えられる。この効果をより確実なものとするために、非導電性被膜の体積抵抗率を1×104Ω·cm以上とする。前述の有機分散媒を処理液中に添加して処理液中における金属粉末の凝集沈降を抑制し、金属粉末の分散性を高めることで体積抵抗率を高めるようにしてもよい。\n\n【0013】\n\n樹脂被膜中の金属粉末が置換めっき反応の起点となり、樹脂被膜表面全体に置換めっき被膜が形成されるためには、樹脂被膜表面やその近傍に金属粉末が均一にしかもリッチに存在することが有利である。従って、この観点からは、樹脂被膜中における金属粉末の分散量が50重量%以上となるように処理液を調製することが望ましい。樹脂被膜中における金属粉末の分散量の上限は限定されるものではないが、通常、金属粉末の分散量が99重量%を越える樹脂被膜を形成するための処理液を調製することは困難である(処理液中において金属粉末が凝集沈降するといった問題や処理液の粘性が上昇して取扱性に劣るといった問題が生じるため)。従って、製造上においては樹脂被膜中における金属粉末の分散量の上限は99重量%である。\n\nなお、金属粉末が均一分散した処理液を調製するために、金属粉末の平均粒径は2μm〜30μmとするが、2μm〜12μmであることが望ましく、2μm〜10μmであることがより望ましい。\n\n【0014】\n\n第1金属の粉末を分散させた樹脂からなる樹脂被膜表面を平滑なものとするとともに、樹脂被膜表面やその近傍に金属粉末を均一にしかもリッチに存在させ、樹脂被膜表面全体に優れた密着性を有する均一な置換めっき被膜が形成されるようにするためには、樹脂被膜の膜厚は1μm〜100μmであることが望ましい。しかしながら、樹脂被膜の膜厚が増大すると、ともすれば、均一な電気めっき被膜の形成に悪影響を及ぼすことがある。従って、この点を考慮すると、樹脂被膜の膜厚の上限は30μmであることがより望ましい。\n\n【0015】\n\nなお、第1金属の粉末を分散させた樹脂からなる樹脂被膜を形成するための工程を行う前に、物品表面と樹脂被膜との界面の密着性を向上させるため、物品表面の脱脂などによる自体公知の清浄化やバレル研磨による投錨効果の付与などを行ってもよい。\n\n【0016】\n\n工程2:\n\n次に、工程1で樹脂被膜がその表面に形成された物品を第1金属より貴な電位を有する第2金属のイオンを含む溶液に浸漬することで樹脂被膜表面に第2金属の置換めっき被膜を形成する。第2金属の置換めっき被膜は、物品表面全体に導電性を付与する機能を有するとともに、第1金属の粉末が樹脂被膜から脱粒することを防止し、物品表面清浄性の向上に寄与する。この工程は置換めっき被膜を形成するための常法に従って行えばよいが、後の工程において均一で緻密な第3金属の電気めっき被膜を形成するために十分な導電性を確保するという観点からは、0.05μm以上の膜厚を有する被膜を形成することが望ましい。置換めっき被膜を形成する前に、樹脂被膜表面を平滑なものとするとともに樹脂被膜中に均一分散された第1金属の粉末の活性面を露出させる目的で樹脂被膜がその表面に形成された物品に対してバレル研磨を施してもよい。なお、置換めっき被膜の膜厚の上限は特段限定されるものではないが、製造コストの点に鑑みれば2μm以下とすることが望ましい。なお、装飾性や帯電防止などのための表面導電性などを物品に付与する目的においては、表面に置換めっき被膜が形成されたこの段階のものであっても実用上満足できるに足る効果を得ることができる。\n\n【0017】\n\n工程3:\n\n最後に、工程2で形成された置換めっき被膜表面に第3金属の電気めっき被膜を形成する。この工程は電気めっき被膜を形成するための常法に従って行えばよい。前述のように、第1金属と第2金属との組合せについては両者の電位差を考慮しなければならないが、第3金属については第2金属との関係において特段考慮しなければならない事情はなく、例えば、Ni、Cu、Sn、Co、Zn、Cr、Ag、Au、Pb、Ptなどのような、通常、電気めっき被膜として形成される金属が第3金属として適用される。従って、第2金属と第3金属が同じ金属であっても何ら問題はない。\n\n【0018】\n\n第2金属と第3金属を同じ金属とする場合、即ち、置換めっき被膜を構成する金属と電気めっき被膜を構成する金属を同じ金属とする場合には、置換めっき被膜を形成する工程2と電気めっき被膜を形成する工程3を一つのめっき浴において行うことが好都合である。即ち、例えば、その表面に第1金属の粉末を分散させた樹脂からなる樹脂被膜が形成された物品をめっき浴に浸漬した当初、電圧をかけないことで置換めっき反応を進行させて置換めっき被膜を形成した後、電圧をかけることで電気めっき被膜を形成することができる。また、その表面に第1金属の粉末を分散させた樹脂からなる樹脂被膜が形成された物品をめっき浴に浸漬した当初から電圧をかけた場合でも、浸漬初期の段階においては樹脂被膜の体積抵抗率が高いので、樹脂被膜表面ではまず第1金属と第2金属の電位差による置換めっき反応が起こって置換めっき被膜が形成される。これにより結果として物品表面全体に導電性が付与されて、置換めっき被膜表面に均一で緻密な電気めっき被膜が形成される。電気めっき被膜の膜厚は、その目的に応じて適宜設定すればよい。\n\n【0019】\n\n例えば、物品表面に置換Niめっき被膜と電気Niめっき被膜を一つのめっき浴において形成する場合においては、めっき浴槽は物品の形状に応じて種々の浴槽を使用することができる。めっき浴としては、ワット浴、スルファミン酸浴、ウッド浴などの公知のめっき浴を用いればよい。第1金属の粉末を分散させた樹脂からなる非導電性被膜表面に密着性に優れた置換Niめっき被膜を形成するためには、例えば、低ニッケル高硫酸塩浴などを使用し、第1金属とニッケルとの間の過度な置換効率(置換Niめっき被膜の成膜速度)を抑制することが望ましい。好適な低ニッケル高硫酸塩浴としては、硫酸ニッケル·5水和物100g/L〜170g/L、硫酸ナトリウム160g/L〜270g/L、塩化アンモニウム8g/L〜18g/L、ホウ酸13g/L〜23g/Lからなるめっき浴が挙げられる。めっき浴のpHは4.0〜8.0とすることが望ましい。4.0未満であると酸性条件に不安定な物品に対して悪影響を及ぼす恐れがある一方、8.0を超えると形成された置換Niめっき被膜の密着性が劣る恐れがあるからである。また、めっき浴のpHを4.0〜8.0とすることには、Niよりも卑な電位を有する第1金属が急激に溶出し\n\nて粗雑な置換Niめっき被膜が形成され、その表面に形成される電気Niめっき被膜との密着性に悪影響を及ぼすといったことを効果的に抑制する目的もある。めっき浴の浴温は30℃〜70℃とすることが望ましい。30℃未満であると形成された置換Niめっき被膜の表面が粗雑なものになる恐れがある一方、70℃を超えると浴温管理が難しく、均一な置換Niめっき被膜が形成されない恐れがあるからである。このようなめっき浴を用いて置換Niめっき被膜を形成した後に電気Niめっき被膜を形成するに際しては、電流密度は0.2A/dm2〜20A/dm2とすることが望ましい。0.2A/dm2未満であると成膜速度が遅くて生産性に劣る恐れがある一方、20A/dm2を超えると形成された電気Niめっき被膜の表面が粗雑なものとなり、ピンホールが多数発生する恐れがあるからである。なお、陽極には電解Ni板を用いるが、Niの溶出を安定させるために、電解Ni板としてSを含有したニッケルチップを使用することが望ましい。\n\n【0020】\n\n例えば、物品表面に置換Cuめっき被膜と電気Cuめっき被膜を一つのめっき浴において形成する場合においても、めっき浴槽は物品の形状に応じて種々の浴槽を使用することができる。めっき浴のpHは5.0〜8.5であることが望ましい。5.0未満であると酸性条件に不安定な物品に対して悪影響を及ぼす恐れがある一方、8.5を超えると形成された置換Cuめっき被膜の密着性が劣る恐れがあるからである。めっき浴の浴温は25℃〜70℃とすることが望ましい。25℃未満であると形成された置換Cuめっき被膜の表面が粗雑なものになる恐れがある一方、70℃を超えると浴温管理が難しく、均一な置換Cuめっき被膜が形成されない恐れがあるからである。このようなめっき浴を用いて置換Cuめっき被膜を形成した後に電気Cuめっき被膜を形成するに際しては、電流密度は0.1A/dm2〜5.0A/dm2とすることが望ましい。0.1A/dm2未満であると成膜速度が遅くて生産性に劣る恐れがある一方、5.0A/dm2を超えると形成された電気Cuめっき被膜の表面が粗雑なものとなり、ピンホールが多数発生する恐れがあるからである。なお、めっき浴としては腐食性と浸透性が低い中性Cuめっき浴が望ましく、とりわけ、硫酸銅とエチレンジアミン四酢酸と亜硫酸ナトリウムを主成分とする中性Cu-EDTA浴が望ましい。\n\n【0021】\n\nなお、以上のようにして形成される電気めっき被膜の上に、更に別の電気めっき被膜などを積層形成してもよい。このような構成を採用することによって、電気めっき被膜の特性を増強·補完したり、更なる機能性を付与したりすることができる。\n\n【0022】\n\n【実施例】\n\n本発明を以下の実施例によってさらに詳細に説明するが、本発明はこれに限定されるものではない。\n\n【0023】\n\n実施例1(透明アクリル板表面への電気めっき被膜の形成)\n\n小型振動バレル(チップトン社製:VM-10)に、縦60mm×横20mm×厚さ2mmの透明アクリル板5枚と容積にして2L分のアルミナメディア(チップトン社製:PSφ4)を装填し、透明アクリル板の表面研磨を30分間行った。次に表面研磨が施された透明アクリル板をアセトン中に1分間浸漬して表面脱脂した後、自然乾燥させた。\n\n非導電性の亜鉛粉末分散樹脂としてエポローバル(ローバル社製の商品名:亜鉛粉末の平均粒径は4μm)を使用し、これをエポローバル専用シンナー(ローバル社製の商品名)で希釈した後(重量比でエポローバル:シンナー=1:0.7)、均一に攪拌することにより非導電性の亜鉛粉末分散樹脂溶液を調製した。得られた溶液をガン口径1.2mmのエアスプレー装置を使用し、吹付圧力0.2MPaの条件にて透明アクリル板表面全面に吹付け、スプレー塗装を行った後、常温(20℃)における60分間の乾燥と200℃における30分間の焼付けを行い、亜鉛粉末の分散量が96重量%である膜厚15μm(断面観察による)の非導電性被膜(体積抵抗率2×105Ω·cm:JIS-H0505による)を透明アクリル板表面に形成した。\n\n小型振動バレル(チップトン社製:VM-10)に、工程1で得られた表面に非導電性被膜が形成された透明アクリル板5枚と容積にして2L分のアルミナメディア(チップトン社製:PSφ4)を装填し、非導電性被膜の表面研磨を30分間行った。\n\n表面研磨が施された非導電性被膜を有する透明アクリル板を、硫酸ニッケル·5水和物240g/L、塩化ニッケル·5水和物45g/L、ホウ酸35g/Lを含み、塩基性炭酸ニッケルでpHを4.2に調整した液温55℃のワット浴に浸漬し、30分間電圧をかけずに非導電性被膜表面に置換Niめっき被膜を形成した。5枚の透明アクリル板の内の2枚をこの時点でワット浴から取り出し、形成された置換Niめっき被膜の膜厚を調べたところ、その平均値は1μmであった(断面観察による)。このようにして形成された置換Niめっき被膜は、金属Niとしての表面性状を呈し、体積抵抗率が5×10-6Ω·cmであった。従って、装飾性や帯電防止などのための表面導電性などを付与する目的においては、この段階のものであっても実用上満足できるに足ることがわかった。\n\n残りの3枚の透明アクリル板について、その後、電圧をかけて電流密度1.5A/dm2の条件にて90分間電気Niめっき処理を行い、置換Niめっき被膜表面に電気Niめっき被膜を形成した。\n\n以上のようにして得られた最表面に電気Niめっき被膜を有する透明アクリル板を3分間超音波水洗した後、100℃にて60分間乾燥させた。\n\n3枚の透明アクリル板の最表面の電気Niめっき被膜を拡大鏡(×4)にて外観検査したところ、ピンホールや突起や異物付着などを有する不良品は存在せず、全てが均質な被膜で良品と評価された。非導電性被膜表面に形成されたNiめっき被膜の総厚の平均値(n=3)は25μmであったことから(断面観察による)、電気Niめっき被膜の膜厚の平均値(n=3)は24μmであることがわかった。\n\n【0024】\n\n実施例2(木製マスコットバット表面への電気めっき被膜の形成)\n\n長さ240mm×直径約10mmの木製マスコットバットに対して実施例1と同様にしてその表面に均一で緻密な電気Niめっき被膜を優れた密着性でもって形成した。\n\n【0025】\n\n実施例3(ダンボール紙表面への電気めっき被膜の形成)\n\n縦60mm×横20mm×厚さ2mmのダンボール紙に対して実施例1と同様にして(但し、小型振動バレルを使用した2回の表面研磨工程は省略)その表面に均一で緻密な電気Niめっき被膜を優れた密着性でもって形成した。\n\n【0026】\n\n実施例4(透明ガラス板表面への電気めっき被膜の形成)\n\n縦60mm×横20mm×厚さ2mmの透明ガラス板に対して実施例1と同様にしてその表面に均一で緻密な電気Niめっき被膜を優れた密着性でもって形成した。\n\n【0027】\n\n実施例5(アルミニウム板表面への電気めっき被膜の形成)\n\n縦60mm×横20mm×厚さ2mmのアルミニウム板に対して実施例1と同様にしてその表面に均一で緻密な電気Niめっき被膜を優れた密着性でもって形成した。\n\n【0028】\n\n実施例6(マグネシウム合金板表面への電気めっき被膜の形成)\n\n縦60mm×横20mm×厚さ2mmのマグネシウム合金板に対して実施例1と同様にしてその表面に均一で緻密な電気Niめっき被膜を優れた密着性でもって形成した。\n\n【0029】\n\n【発明の効果】\n\n本発明によれば、物品の表面材質や表面性状に依存することなくその表面に均一で緻密な電気めっき被膜を優れた密着性でもって形成する方法が提供される。', '【0001】\n\n技术领域\n\n本发明涉及一种在其表面上形成具有优异均匀和致密电镀膜的粘合性的方法,而无需取决于表面材料和制品的表面性质。\n\n【0002】\n\n发明背景\n\n用于抗静电,电磁波屏蔽性能,抗菌性和抗冲击性的装饰性,耐候性,抗菌性,施加到物品的目的,通常对其在其表面上形成金属膜。形成金属涂层的方法是各种各样的,但其中,电镀膜形成方法根据电镀过程,已被广泛投入实际使用,因为它适用于批量生产。\n\n【0003】\n\n然而,为了在物品表面上形成电镀膜,需要导电制品的表面。因此,塑料,木材,纸张,玻璃,陶瓷,橡胶,它不能直接形成电镀薄膜,由物品表面如混凝土的物品表面形成的非导电。虽然有时希望在镁或铝上形成金属涂层或包含金属材料的制品,例如金属材料(移动电话和笔记本个人电脑等)表面,镁是金属中特别基础的金属。因此,即使在其表面上形成电镀膜,即使在其表面上形成电镀膜,由于在浸入电镀浴中即将浸入电镀浴中的快速替代电镀反应,也难以形成良好质量的电镀膜。铝和钛是非常容易氧化金属,通常,其表面覆盖着非常致密的金属氧化物膜。因此,尽管电离趋势低,但是表面的电位高,难以执行电镀工艺。通过在表面上除去金属氧化物膜,但是在除去金属氧化物膜之后,需要在特殊蚀刻技术上形成电镀膜,再次是金属氧化物膜,因为必须进行电镀过程的时间约束,直到一代发生,必须说有实际问题。通过浸入含有氢氧化钠和氢氧化锌的溶液中,在所谓的锌酸锌处理之后,在强碱性环境下进行蚀刻时同时形成取代的电镀膜,形成通过步骤进行电镀工艺的化学镀膜方法\n\n过程总体上也很复杂。\n\n此外,当在物品表面上形成均匀的电镀膜时,在具有孔隙部分或表面的细槽或诸如木蝙蝠或砖或压铸产品的细槽或不规则时,必须解决相对于物品表面的电导率,可以确定如何安全物品表面的平滑度或如何施加。\n\n而且,由高腐蚀性材料如诸如镁的金属制成的制品,因为当它受到电镀过程时可以腐蚀,以形成相对于这种难题的电镀膜。\n\n【0004】\n\n本发明要解决的问题\n\n如果在JP-A-61-210183中描述了在JP-A-61-210183中描述了在制品表面上形成了含有分散金属粉末的树脂薄膜之后,在制品表面上形成树脂薄膜,则在制品表面上形成树脂薄膜,在制品表面上形成无电镀膜的方法采用树脂膜表面,因此考虑形成在形成的化学镀膜表面上形成电镀膜的方法。然而,化学镀膜,由于通过在还原剂的作用减小了电镀液中的金属离子是通过使金属沉积被镀覆表面形成的薄膜,与沉积的较差的物体粘附不良效率。通过使用钯催化剂和铂催化剂,存在提高成膜效率的方法,但以这种方式不可避免的成本增加。此外,不可否认的是,来自化学镀膜中含有的杂质的还原剂不利地影响电镀膜在其表面上的形成。\n\n本发明的目的是提供一种在其表面上具有优异的均匀和致密电镀膜的粘合性的方法,而无需取决于物品的表面材料和表面性质。\n\n【0005】\n\n[解决问题的手段]\n\n在本发明的物品表面上形成电镀膜的方法,本发明人鉴于上述本发明人通过执行各种研究,如权利要求1所述的各种研究,所述物品表面,平均粒度为2μm至30μm由含有第一金属分散粉末的树脂制成体积电阻率为1×104非电导率ω·cm或更高形成薄膜后,非导电通过浸入含有比第一金属的第二金属离子的溶液中形成的膜形成的制品非导电在涂层表面上形成的第二金属取代电镀膜,其特征在于,通过在位移镀膜表面上形成第三金属电镀膜(但是,作为一篇文章,不包括稀土的永磁体)。\n\n魔鬼索赔22.如权利要求1所述的形成方法所述,其特征在于,所述树脂膜中所述第一金属粉末的分散量的特征在于50%至99重量%。\n\n魔鬼索赔32.如权利要求1所述的形成方法,其特征在于,所述树脂膜的厚度的特征在于,所述树脂膜的厚度为1μm至100μm。\n\n还,4形成方法,如权利要求1所述3在与锌的第二金属第一金属中任一项的形成方法,其特征在于该镍。\n\n还,5形成方法,如权利要求1所述3在根据第一金属中任一项的形成方法,其中第二金属镍是铜。\n\n还,6形成方法,如权利要求1所述5在根据任何一种的形成方法中,其中第二金属和第三金属是相同的金属。\n\n还,7一种根据权利要求的方法6在形成方法中,在一个电镀浴中形成形成步骤和电镀膜以形成取代的电镀膜。\n\n还,8形成方法,如权利要求1所述7在根据位移电镀涂层的任何一个膜厚度的形成方法中,其特征在于它是0.05myuemu〜2myuemu。\n\n索赔本发明的制品9如上所述,至权利要求18其中通过形成的形成方法在表面上的电镀膜由形成的方法(但是,不包括稀土的永磁磁铁)。\n\n此外,如权利要求1所列10如上所述,事情\n\n在货物表面上,平均粒度为2μm至30μm由含有第一金属分散粉末的树脂制成体积电阻率为1×104非电导率ω·cm或更高形成薄膜后,非导电通过浸入含有比第一金属的第二金属离子的溶液中形成的膜形成的制品非导电并在涂层表面上形成第二金属取代电镀膜(但是,除了一篇文章中,不包括稀土的永磁体)。\n\n索赔本发明的制品11如权利要求13所述的形成方法,其特征在于,其特征在于,通过根据权利要求13的形成方法,在所述表面上形成所述位移镀膜。(但是,不包括稀土的永磁磁铁)。\n\n【0006】\n\n发明内容\n\n在制品表面上形成电镀膜的方法,在形成制品表面上的第一金属的分散粉末的树脂薄膜之后,使制品比第一金属隆起电位成形,所形成的树脂膜在通过浸入含有第二金属离子的溶液中的树脂膜表面进一步形成在位移电镀膜表面上的第三金属电镀膜,其用浸入第二金属取代的电镀膜。\n\n【0007】\n\n在本发明的物品表面上形成电镀膜的方法中,形成由制品表面上的第一金属的分散粉末制成的树脂涂膜,然后在树脂薄膜表面或附近形成在整个树脂涂层表面上形成其通过利用开始粉末的位移电镀反应具有优异的粘合性的第二金属取代镀膜。由于导电性整个制品表面是为了得到施加,因此可以形成具有优异的粘附性与致密的第三金属电镀膜具有均匀的位移镀膜膜表面。因此,不取决于物品,塑料,木材,纸张,玻璃,陶瓷,橡胶,混凝土,粘附与优异均匀和致密的电镀薄膜的物品表面上的任何材料制成的金属诸如金属的材料表面上的粘附可以用性别形成。\n\n在下文中,将按顺序描述用于在本发明的物品表面上形成电镀膜的方法。\n\n【0008】\n\n第1步:\n\n首先,由分散在物品表面上分散在第一金属粉末的树脂制成的树脂膜。例如,可以使用主要由树脂膜组成的树脂,可以使用热固性树脂。具体地,可列举出酚醛树脂,环氧树脂,三聚氰胺树脂,丙烯酸树脂,聚酯树脂,聚氨酯树脂,聚酰亚胺树脂,苯乙烯丙烯酸树脂及其混合树脂。\n\n【0009】\n\n虽然分散在树脂涂层中的第一金属的粉末的类型没有特别限制,但是第一金属具有比第二金属的第一金属的电位,以便在后续步骤中引起取代的电镀反应是必要的。因此,考虑到与第二金属的电位差异适当地选择第一金属。第一金属和第二金属的组合的具体实例包括具有第一金属和第一金属的第二金属的组合,第二金属是用镍的铜的组合。\n\n【0010】\n\n树脂涂层由散射第一金属的粉末的树脂组成、非导电涂层这将是。期望在制品的表面上形成的树脂涂层,如诸如镁或非导电涂层的金属的高腐蚀性材料制成。即使当替换电镀工艺或电镀处理被腐蚀时,即使树脂涂层表面被腐蚀,也通过更换的电镀膜在树脂涂膜表面上形成的电镀膜中产生诸如针孔或划痕的缺陷。这是因为可以防止通过树脂涂层的内部腐蚀,即使通过通过缺陷等腐蚀树脂涂层表面。\n\n【0011】\n\n由一种树脂组成的非导电膜,其中第一金属的粉末分散,例如,不导电树脂本身,其中第一金属的粉末被分散,并且如有必要,这种树脂用作有机溶剂喷雾通过稀释用物品稀释制备的溶液作为处理液或加工溶液中的制品\n\n浸没并沉积后,通过干燥它形成。将金属粉末分散的一些非导电树脂是可商购的,并且可以容易地获得。即使将第一金属的粉末分散的树脂,也通过加入有机分散培养基以均匀分散和分离单独的金属粉末来使处理液成为未导电的。我可以做到。在这种情况下,有机分散介质是阴离子分散介质(脂族多元羧酸,聚醚聚酯羧酸盐,聚合物聚乙酸多胺盐,高分子量多元羧酸长链胺盐等),非离子性分散介质(羧酸盐盐,磺酸盐和铵盐如聚氧乙烯烷基醚和脱水山梨糖醇酯),聚合物分散介质(水溶性环氧羧酸盐,磺酸盐和铵盐等。丙烯酸共聚物,尼加拉瓦等)等适合使用金属粉末的亲和力和成本。此外,只要它是可以形成非导电膜的加工液,它本身就是导电的。在制备处理液期间,可以适当地使用诸如球磨机,磨损器或砂磨机的分散器。\n\n【0012】\n\n由于由其中分散第一金属的粉末的树脂组成的非导电膜,即使膜的表面被腐蚀,腐蚀也通过薄膜的内部进行,因此本身就具有施加的效果耐腐蚀性。这种效果是涂层具有的自修复作用(第一金属的腐蚀化合物(第一金属是ZnCl当锌时2·4ZN(哦)2和ZnO等落落)由于由于树脂或划痕的体积引起的体积引起的体积增加,以及第一金属或第一金属的牺牲腐蚀保护作用。等被认为是贡献。使这种效果更加可靠在1×10不导电涂层体积电阻率4ω·cm或更多。通过将上述有机分散介质加入到处理液中以抑制处理液中的金属粉末的聚集沉降,可以增加体积电阻率,增强金属粉末的分散性。\n\n【0013】\n\n有利的是,树脂涂层中的金属粉末成为取代电镀反应的起点,并且在整个树脂涂层表面上形成取代的电镀膜,有利的是,金属粉末均匀地存在于表面或其附近。它是。因此,从该观点来看,期望制备处理液,使得树脂涂层中金属粉末的分散量为50重量%或更高。尽管树脂涂层中金属粉末的分散量的上限不受限制,但通常难以制备用于形成具有超过99重量%的金属粉末分散的树脂涂层的处理液。(因为有在处理液中升高了金属粉末内聚力和处理液体粘度的问题,处理性质较差)。因此,在制造中,树脂膜中金属粉末的分散量的上限为99重量%。\n\n另外,为了制备经处理的溶液,其中金属粉末均匀分散在金属粉末的平均粒径是2μm至30μm在那2它为μm至12μm希望它为2μm至10μm比可取的。\n\n【0014】\n\n由分散的第一金属的粉末的树脂制成的树脂涂层表面光滑,并且金属粉末均匀地或在树脂涂层表面和树脂涂层附近的附近,以及对整个的优异粘附性树脂涂层表面的表面。为了形成具有均匀取代膜的均匀取代的电镀膜,希望树脂涂层的膜厚度为1μm至100μm。然而,如果树脂膜的膜厚度增加,则可能对均匀电镀膜的形成产生不利影响。因此,考虑到这一点,更优选的是,树脂涂层的膜厚度的上限为30μm。\n\n【0015】\n\n为了执行形成由分散第一金属的粉末的树脂制成的树脂膜的方法,通过制品表面的脱落改善了物品表面和树脂膜之间的界面之间的粘附性本身。可以提供已知的清洁,其中镜筒抛光等。\n\n【0016】\n\n第2步:\n\n接下来,通过将形成树脂涂层在第一种金属表面的树脂涂层的表面上浸入其中的树脂涂层的表面浸入含有第二金属离子的溶液中,将第二金属的取代膜在树脂涂层表面上浸入树脂涂层的表面上比第一金属。形式。第二金属的取代镀膜具有赋予制品的整个表面的电导率的函数,并且防止第一金属的粉末从树脂膜脱离并有助于改善物体表面可清洁性。该步骤可以根据用于形成取代的电镀膜的常规方法进行,但是从确保在后面的过程中确保均匀和致密金属的电镀膜的电镀膜的观点来说,希望形成具有膜厚度的膜0.05μm或更大。在形成替代的电镀膜之前,在树脂涂层的表面上形成树脂涂层,以暴露在树脂涂覆桶抛光中均匀分散在树脂涂覆筒抛光中的第一金属粉末的活性表面。虽然取代电镀膜的膜厚度的上限没有特别限制,但考虑到制造成本的点,希望将其设定为2μm或更小。另外,旨在施加表面电导率等,用于装饰和抗静电等,即使是在表面上形成替代电镀膜的阶段,也可以具有足够的效果这实际上是令人满意的。\n\n【0017】\n\n第3步:\n\n最后,在步骤2中形成的取代的电镀膜表面上形成第三金属的电镀膜。该过程可以根据用于形成电镀膜的常规方法进行。如上所述,必须考虑第一金属和第二金属之间的电位差,但是在与第二金属的关系中,没有必要考虑第三金属,例如,形成为电镀膜的金属是施加为第三金属,如Ni,Cu,Sn,Co,Zn,Cr,Ag,Au,Pb,Pt等。因此,即使第二金属和第三金属是相同的金属,也没有问题。\n\n【0018】\n\n当第二金属和第三金属是相同的金属,即,构成取代的电镀膜的金属和构成电镀膜的金属用作相同的金属,过程2和形成取代电镀膜的电力执行在一个电镀浴中形成电镀膜的步骤3是方便的。即,例如,通过最初通过将取代的电镀反应进行通过浸入由第一金属粉末的树脂制成的树脂制成而获得的电压来进行取代的电镀膜,从而使取代的电镀膜进行取代的电镀膜。在其表面上形成在电镀浴中。形成后,可以通过施加电压来形成电镀膜。另外,即使当通过浸入由树脂制成的树脂涂层而获得的电压,其中在表面上形成第一金属分散的粉末,即使当从开始到电镀浴时施加电压,也是如此由于速率高,因此浸入的早期阶段的树脂涂层,由于第一金属和第二金属之间的电位差,形成取代的电镀反应,并且形成取代的电镀膜。结果,将电导率施加到制品的整个表面上,并且在取代的电镀膜表面上形成均匀和致密的电镀膜。电镀膜的膜厚度可以根据目的适当地设定。\n\n【0019】\n\n例如,在一个电镀浴中制品的表面上形成取代的Ni电镀膜和电Ni电镀膜的情况下,电镀浴可以根据制品的形状使用各种桶。作为电镀浴,可以使用诸如瓦特浴,氨基氨酸浴,木浴等的已知的镀浴浴。为了形成与由树脂制成的非导电涂层表面的粘合性优异的取代的Ni电镀膜,其中第一金属的粉末分散,例如低镍高硫酸盐等,并且希望抑制镍之间取代效率的过度置换效率(取代的镍镀膜的沉积速率)。合适的低镍高硫酸盐包括硫酸镍,将水合物100g / L至170g / L,硫酸钠160g / L至270g / L,氯化铵8g / L至18g / L,13g硼酸的镀浴由L至23克/升组成。希望电镀浴的pH为4.0至8.0。如果小于4.0,则可以对酸性条件的制品产生不利影响,而如果它超过8.0,则所形成的取代的Ni电镀膜的粘附可能是差的。另外,为了将pH pH pH浴4.0至8.0设置为8.0,第一金属具有比NI迅速拍摄的潜力的潜力\n\n还有效地抑制形成粗取代的Ni电镀膜并对在表面上形成的电镍镀膜的粘合性产生不利影响。理想的是,电镀浴的浴温为30℃至70℃。如果形成的取代的Ni电镀膜的表面小于30℃。使用这种电镀浴形成取代的Ni电镀膜时,电流密度为0.2A / dm2〜20a / dm2是理想的。 0.2a / dm.2如果小于或小于成膜速度,则可能差不多生产,而20A / DM2形成的电气Ni镀膜的表面是粗糙化的,因为形成的电镀镍膜的表面可能是粗糙的,并且可能发生大量的针孔。另外,尽管电解Ni板用于阳极,但希望使用含有S作为电解Ni板的镍芯片以稳定Ni的洗脱。\n\n【0020】\n\n例如,即使在一个电镀浴中制品的表面上形成取代的Cu电镀膜和电Cu电镀膜的情况下,镀浴也可以根据制品的形状使用各种桶。理想的是,电镀浴的pH为5.0至8.5。如果小于5.0,则可以对酸性条件的制品产生不利影响,而如果超过8.5,则形成的取代的Cu镀膜的粘合可能是差的。理想的是,电镀浴的浴温为25℃至70℃。当形成的取代的Cu电镀膜的表面小于25℃时。使用这种电镀浴形成取代的Cu电镀膜时,电流密度为0.1A / DM2〜5.0a / dm2是理想的。 0.1A / DM.2如果小于那个,沉积速度慢,生产率可能低于生产率,5.0A / DM2形成超过的电Cu电镀膜的表面变得粗糙,并且可能发生大量的针孔。另外,希望具有低腐蚀性和渗透性的中性Cu电镀浴,特别是具有硫酸铜和乙二胺四乙酸和亚硫酸钠作为主要成分的中性Cu-EDTA浴。\n\n【0021】\n\n注意,可以在如上所述形成的电镀膜上形成更多的另一电镀膜等。通过采用这样的配置,可以增强电镀膜的特性和补充,或者可以赋予进一步的功能。\n\n【0022】\n\n【例子】\n\n尽管将通过以下实施例更详细地描述本发明,但是本发明不限于此。\n\n【0023】\n\n实施例1(在透​​明丙烯酸板表面上的电镀涂层的形成)\n\n小振动桶(由芯片吨制造:VM-10),60 mm垂直×20mm×厚度为2 mm,2 mm,2 mm,用于氧化铝介质(由芯片吨制造:PSφ4)是负载和透明的表面抛光丙烯酸板进行30分钟。接下来,将表面抛光的透明丙烯酸酯浸入丙酮中1分钟并进行表面脱脂,然后自然干燥。\n\n非导电锌粉分散树脂(由Robar Co.,Ltd.:锌粉的平均粒径为4μm),并用Emoro专用稀释剂稀释(由Robar制造的商品名)(重量是非导电锌粉分散树脂通过以均匀搅拌以均匀搅拌以均匀搅拌均匀搅拌来制备溶液:稀释剂= 1:0.7)。得到的溶液为1.2mm GaN直径,喷涂0.2MPa在透明丙烯酸板的整个表面上喷涂,并进行喷涂,然后在常温(20℃)下60分钟的非导电涂层(体积电阻率2×10通过横截面观察,厚度为15μm(通过横截面观察),在200℃下烘烤30分钟,锌粉的分散量为96重量%。5在透明丙烯酸板的表面上形成ω·cm:JIS-H0505)。\n\n小型振动桶(由芯片吨:VM-10制造),氧化铝介质(由芯片铜有限公司生产),具有5个透明丙烯酸板,其中在所获得的表面上形成非导电涂层在步骤1中,加载负载,并进行不导电涂层的表面抛光30分钟。\n\n具有表面抛光的非导电涂层的透明丙烯酸板是240g / L,5个水合物硫酸盐,45g / L氯化镍,45克/升,硼酸,35克/克硼酸,镍浸入其中在55℃的液体温度下的瓦特浴调节至4.2,并在非导电涂层表面上形成取代的Ni电镀膜,而不花电压30分钟。此时,五个透明丙烯酸板中的两个取出瓦塔浴,并检查形成的取代的Ni镀膜的膜厚度,平均值为1μm(通过横截面观察)。以这种方式形成的取代的Ni电镀膜表现为金属Ni的表面性质,体积电阻率为5×10-6它是ω·cm。因此,发现即使在该阶段,即使用于施加表面电导率等,甚至几乎令人满意地用于装饰和抗静电防止。\n\n关于剩余的三个透明丙烯酸板,然后将电压施加到电流密度1.5A / DM2在本发明的条件下,在本发明的条件下进行电气Ni电镀处理90分钟,以在取代的Ni电镀膜表面上形成电线镀膜。\n\n在获得的最外表面上,具有电Ni电镀膜的透明丙烯酸板在最外表面上浇水3分钟,然后在100℃下干燥60分钟。\n\n当通过膨胀镜(×4)检查三个透明丙烯饼板的最外表面上的电气Ni电镀膜时,没有缺陷的产品具有针孔,突起和异物粘附,并且所有均匀的产品被评价为a好的项目。在非导电涂层表面上形成的Ni电镀膜的总厚度的平均值(n = 3)为25μm(通过横截面观察),电镍膜膜厚度的平均值( n = 3发现它是24μm。\n\n【0024】\n\n实施例2(木吉祥物蝙蝠表面上的电镀涂层的形成)\n\n以与实施例1相同的方式形成均匀和致密的电气Ni镀膜,其长度为240mm×木吉祥物蝙蝠,与实施例1中相同的方式,具有优异的粘附性。\n\n【0025】\n\n实施例3(纸板表面上的电镀膜的形成)\n\n垂直60mm×水平20 mm×纸板纸,厚度为2mm,如实施例1(省略了使用小振动桶的两个表面抛光步骤)均匀,精确的电动Ni电镀在涂层上形成优异的涂层粘附。\n\n【0026】\n\n实施例4(透明玻璃板表面上的电镀膜的形成)\n\n相对于具有垂直60mm×宽20mm×厚度为2mm的透明玻璃板,以与实施例1相同的方式形成均匀和致密的电气Ni镀膜。\n\n【0027】\n\n实施例5(铝板表面上的电镀涂层的形成)\n\n相对于具有垂直60mm×宽度20mm×厚度为2mm的铝板,以与实施例1相同的方式形成均匀和致密的电气Ni镀膜。\n\n【0028】\n\n实施例6(在镁合金板表面上形成电镀薄膜)\n\n相对于具有垂直60mm×宽20mm×厚度为2mm的垂直60mm×宽度20mm×厚度为2mm的镁合金板,以与实施例1相同的方式形成均匀和致密的电气Ni镀膜。\n\n【0029】\n\n【发明效果】\n\n根据本发明,提供了一种形成均匀和致密的电镀膜的方法,其在不取决于制品的表面材料和表面性质的情况下与其表面具有优异的粘合性。');
INSERT INTO `os_patent_instruction_text` VALUES (12960, 22789, '【0001】\n\n【発明の属する技術分野】\n\n本発明は、表面に均一で緻密な電気めっき被膜を優れた密着性でもって有することで高い耐食性を示す希土類系永久磁石の製造方法に関する。\n\n【0002】\n\n【従来の技術】\n\nNd-Fe-B系永久磁石に代表されるR-Fe-B系永久磁石などの希土類系永久磁石は、資源的に豊富で安価な材料が用いられ、かつ、高い磁気特性を有していることから、今日様々な分野で使用されている。\n\n近年、希土類系永久磁石が使用される電子業界や家電業界では、部品の小型化やダウンサイジング化が進み、それに対応して、磁石自体も小型化や複雑形状化の必要性に迫られている。\n\nこの観点から、磁性粉と樹脂バインダーを主成分とした、形状成形が容易なボンド磁石が注目され、すでに各種方面で実用化されている。\n\n【0003】\n\n希土類系永久磁石は、大気中で酸化腐食されやすいRを含む。それ故、表面処理を行わずに使用した場合には、わずかな酸やアルカリや水分などの影響により表面から腐食が進行して錆が発生し、それに伴って、磁気特性の劣化やばらつきを招くことになる。さらに、\n\n錆が発生した磁石を磁気回路などの装置に組み込んだ場合、錆が飛散して周辺部品を汚染する恐れがある。\n\nこの問題点を解消すべく、磁石表面に耐食性被膜としての電気めっき被膜を形成する試みがなされている。しかし、ボンド磁石表面に直接的に電気めっき被膜を形成しようとした場合、磁石表面を構成する樹脂バインダーで絶縁化されている磁性粉やこれらの磁性粉間の樹脂部分は導電性が低いために均一で緻密な被膜を形成することができず、その結果、ピンホール(無めっき部分)が生じて発錆を招く場合がある。\n\n【0004】\n\n【発明が解決しようとする課題】\n\n以上の点に鑑み、ボンド磁石表面全体に導電性を付与した後に電気めっき被膜を形成する方法として、例えば、特許第2719658号(特開平4-276095号)公報には、ボンド磁石表面に樹脂と導電性材料粉末との混合物を塗布して導電性樹脂被膜を形成した後、電気めっきを施す方法が提案されている。しかし、この方法では、ミクロ的に見ると樹脂表面全体に必ずしも十分な導電性が付与されているわけではないので、表面に導電性が低い部分が存在することは否めず、その結果、均一で緻密な電気めっき被膜を形成することができないという問題がある。また、磁石表面に形成される樹脂被膜が導電性であるので、電気めっきを行った際などに樹脂被膜表面が腐食すると、被膜内部における導電部を通じて腐食が磁石表面まで進行してしまうといった問題もある。\n\nまた、上記特許公報には、ボンド磁石表面に無電解めっきを施した後、電気めっきを施す方法も提案されているが、この方法では、無電解めっきを行った際などに処理液の溶媒となる水や処理液に含まれる各種の成分が磁石の空孔部などに残存してしまい、磁石の腐食を招く場合があるほか、形成される被膜自体の磁石表面に対する密着性も優れたものとは言い難い。\n\n従って、上記のようなこれまでに提案されている方法では、満足できるに足る成果を得ることができないことから、ボンド磁石表面に電気めっき被膜を形成するための新たな方法が待ち望まれている。優れた方法が開発されれば、当然のことながら、それはボンド磁石に対してだけでなく焼結磁石に対しても優れた効果を発揮するものであるので、非常に価値が高い。\n\nそこで本発明は、表面に均一で緻密な電気めっき被膜を優れた密着性でもって有することで高い耐食性を示す希土類系永久磁石の製造方法を提供することを目的とする。\n\n【0005】\n\n【課題を解決するための手段】\n\n上記の点に鑑みて本発明者らが種々の検討を行ったことにより完成された本発明の希土類系永久磁石の製造方法は、請求項1記載の通り、希土類系永久磁石表面に、平均粒径が2μm〜30μmの第1金属の粉末を分散させた樹脂からなる体積抵抗率が1×104Ω·cm以上の非導電性被膜を形成した後、非導電性被膜形成磁石を第1金属より貴な電位を有する第2金属のイオンを含む溶液に浸漬することで非導電性被膜表面に第2金属の置換めっき被膜を形成し、さらに置換めっき被膜表面に第3金属の電気めっき被膜を形成することを特徴とする。\n\nまた、請求項2記載の製造方法は、請求項1記載の製造方法において、希土類系永久磁石がボンド磁石であることを特徴とする。\n\n  また、請求項3記載の製造方法は、請求項1または2記載の製造方法において、非導電性被膜中における第1金属の粉末の分散量が50重量%〜99重量%であることを特徴とする。\n\n  また、請求項4記載の製造方法は、請求項1乃至3のいずれかに記載の製造方法において、非導電性被膜の膜厚が1μm〜100μmであることを特徴とする。\n\nまた、請求項5記載の製造方法は、請求項1乃至4のいずれかに記載の製造方法において、第1金属が亜鉛で第2金属がニッケルであることを特徴とする。\n\nまた、請求項6記載の製造方法は、請求項1乃至4のいずれかに記載の製造方法において、第1金属がニッケルで第2金属が銅であることを特徴とする。\n\nまた、請求項7記載の製造方法は、請求項1乃至6のいずれかに記載の製造方法において、第2金属と第3金属が同じ金属であることを特徴とする。\n\nまた、請求項8記載の製造方法は、請求項7記載の製造方法において、置換めっき被膜を形成する工程と電気めっき被膜を形成する工程を一つのめっき浴において行うことを特徴とする。\n\nまた、請求項9記載の製造方法は、請求項1乃至8のいずれかに記載の製造方法において、置換めっき被膜の膜厚が0.05μm〜2μmであることを特徴とする。\n\nまた、本発明の希土類系永久磁石は、請求項10記載の通り、希土類系永久磁石表面に、平均粒径が2μm〜30μmの第1金属の粉末を分散させた樹脂からなる体積抵抗率が1×104Ω·cm以上の非導電性被膜を形成した後、非導電性被膜形成磁石を第1金属より貴な第2金属のイオンを含む溶液に浸漬することで非導電性被膜表面に第2金属の置換めっき被膜を形成し、さらに置換めっき被膜表面に第3金属の電気めっき被膜を形成することで得られるものである。\n\nまた、本発明の希土類系永久磁石は、請求項11記載の通り、希土類系永久磁石表面に、平均粒径が2μm〜30μmの第1金属の粉末を分散させた樹脂からなる体積抵抗率が1×104Ω·cm以上の非導電性被膜が形成され、さらにその表面に第1金属より貴な第2金属の置換めっき被膜を介して第3金属の電気めっき被膜が形成されているものである。\n\nまた、本発明の希土類系永久磁石は、請求項12記載の通り、希土類系永久磁石表面に、平均粒径が2μm〜30μmの第1金属の粉末を分散させた樹脂からなる体積抵抗率が1×104Ω·cm以上の非導電性被膜が形成され、さらにその表面に第1金属より貴な第2金属の置換めっき被膜が形成されているものである。\n\nまた、本発明の希土類系永久磁石は、請求項13記載の通り、希土類系永久磁石表面に、平均粒径が2μm〜30μmの第1金属の粉末を分散させた樹脂からなる体積抵抗率が1×104Ω·cm以上の非導電性被膜が形成されているものである。\n\n【0006】\n\n【発明の実施の形態】\n\n本発明の希土類系永久磁石の製造方法は、希土類系永久磁石表面に第1金属の粉末を分散させた樹脂からなる非導電性被膜を形成した後、非導電性被膜形成磁石を第1金属より貴な電位を有する第2金属のイオンを含む溶液に浸漬することで非導電性被膜表面に第2金属の置換めっき被膜を形成し、さらに置換めっき被膜表面に第3金属の電気めっき被膜を形成することを特徴とするものである。\n\n【0007】\n\n本発明の希土類系永久磁石の製造方法においては、希土類系永久磁石表面に第1金属の粉末を分散させた樹脂からなる非導電性被膜を形成し、被膜表面やその近傍に存在する第1金属の粉末を起点とする置換めっき反応を利用することで第2金属の置換めっき被膜を非導電性被膜表面全体に形成する。これにより結果として磁石表面全体に導電性が付与されることになるので、置換めっき被膜表面に均一で緻密な第3金属の電気めっき被膜を優れた密着性でもって形成することが可能となる。また、磁石表面に形成された樹脂被膜は非導電性であるので、万が一、電気めっき被膜にピンホールや傷などの欠陥が生じ、当該欠陥を通じるなどして樹脂被膜表面が腐食したとしても、被膜内部を通じて腐食が磁石表面まで進行してしまうといったことがないという利点を有する。本発明の製造方法によれば、希土類系永久磁石がボンド磁石であっても焼結磁石であっても上記の効果を得ることができるが、この効果はとりわけボンド磁石に対して有益なものとなる。また、複数の希土類系永久磁石を嫌気性接着剤などの接着剤を用いて積層した積層磁石に対して本発明の製造方法を適用すれば、磁石と磁石の間の接着剤厚み部分も含めて積層磁石表面全体に電気めっき被膜を形成することができる。従って、磁石と接着剤との間の接着界面への接着劣化起因物質(水分など)の浸入を阻止することができるので、接着劣化防止効果を得ることができる。\n\n以下、本発明の希土類系永久磁石の製造方法について、これをボンド磁石に適用する場合\n\nを例にとり、順を追って説明する。\n\n【0008】\n\n工程1:\n\nまず、ボンド磁石表面に第1金属の粉末を分散させた樹脂からなる非導電性被膜を形成する。非導電性被膜の主体となる樹脂としては、例えば、熱硬化性樹脂、具体的には、フェノール樹脂、エポキシ樹脂、メラミン樹脂、アクリル樹脂、ポリエステル樹脂、ウレタン樹脂、ポリイミド樹脂、スチレンアクリル樹脂などが単独で、または複数の樹脂を混合して使用される。\n\n【0009】\n\n樹脂被膜中に分散される第1金属の粉末の種類に特段の制限はないが、後の工程において置換めっき反応を起すためには、第1金属は第2金属よりも卑な電位を有することが必須となる。従って、第1金属は第2金属との電位差を考慮して適宜選択される。第1金属と第2金属の組合せの具体例としては、第1金属が亜鉛で第2金属がニッケルの組合せや、第1金属がニッケルで第2金属が銅の組合せなどが挙げられる。\n\n【0010】\n\n第1金属の粉末を分散させた樹脂からなる非導電性被膜は、例えば、第1金属の粉末を分散させた非導電性の樹脂自体を、また、必要であればこのような樹脂を有機溶剤を用いて希釈して調製した溶液を処理液として磁石表面にスプレー塗装したり、処理液中に磁石を浸漬して浸漬塗装を行った後、これを乾燥させることにより形成する。金属粉末を分散させた非導電性の樹脂は市販されているものもあり、簡便に入手することができる。第1金属の粉末を分散させた樹脂が導電性であっても、有機分散媒を添加して個々の金属粉末を均一に分散させて隔離することで処理液を非導電性のものとすることもできる。この場合、有機分散媒としては、アニオン性分散媒(脂肪族系多価カルボン酸、ポリエーテルポリエステルカルボン酸塩、高分子ポリエステル酸ポリアミン塩、高分子量ポリカルボン酸長鎖アミン塩など)、非イオン性分散媒(ポリオキシエチレンアルキルエーテルやソルビタンエステルなどのカルボン酸塩やスルフォン酸塩やアンモニウム塩など)、高分子分散媒(水溶性エポキシのカルボン酸塩やスルフォン酸塩やアンモニウム塩など、スチレン-アクリル酸共重合物、ニカワなど)などが金属粉末との親和性やコストの点から好適に使用される。また、非導電性被膜を形成することができる処理液であれば、それ自体が導電性であってもよい。処理液の調製に際しては、ボールミルやアトライターやサンドミルなどの分散機を適宜使用することができる。\n\nなお、第1金属の粉末を分散させた樹脂からなる非導電性被膜を形成するための操作を行う前に磁石表面に対してバレル研磨などの自体公知の清浄化手段を施してもよい。\n\n【0011】\n\n非導電性被膜中の金属粉末が置換めっき反応の起点となり、被膜表面全体に置換めっき被膜が形成されるためには、被膜表面やその近傍に金属粉末が均一にしかもリッチに存在することが有利である。従って、この観点からは、被膜中における金属粉末の分散量が50重量%以上となるように処理液を調製することが望ましい。被膜中における金属粉末の分散量の上限は限定されるものではないが、通常、金属粉末の分散量が99重量%を越える被膜を形成するための処理液を調製することは困難である(処理液中において金属粉末が凝集沈降するといった問題や処理液の粘性が上昇して取扱性に劣るといった問題が生じるため)。従って、製造上においては被膜中における金属粉末の分散量の上限は99重量%である。\n\nなお、金属粉末が均一分散した処理液を調製するために、金属粉末の平均粒径は2μm〜30μmとするが、2μm〜12μmであることが望ましく、2μm〜10μmであることがより望ましい。\n\n【0012】\n\n以上のようにして形成される第1金属の粉末を分散させた樹脂からなる非導電性被膜は、被膜が非導電性であるが故、たとえ被膜表面が腐食したとしても、被膜内部を通じて腐食が磁石表面まで進行してしまうことを防止するので、それ自体が磁石に対して耐食性を\n\n付与するという効果を有する。この効果には、被膜が有する自己修復作用(第1金属の腐食化合物(第1金属が亜鉛の場合にはZnCl2·4Zn(OH)2やZnOなどが該当する)の生成や樹脂の膨潤による体積増加により被膜にピンホールや傷などの欠陥が存在しても当該欠陥を埋没させてしまうという作用)や第1金属が有する犠牲防食作用なども寄与しているものと考えられる。この効果をより確実なものとするために、非導電性被膜の体積抵抗率を1×104Ω·cm以上とする。前述の有機分散媒を処理液中に添加して処理液中における金属粉末の凝集沈降を抑制し、金属粉末の分散性を高めることで体積抵抗率を高めるようにしてもよい。また、表面に高い体積抵抗率の非導電性被膜を有するボンド磁石は、モータに組み込んで使用した場合、磁石内部に発生する渦電流が少ない。従って、渦電流に起因する発熱による熱減磁も少ないので、モータ効率の低減を抑制することができる点において価値がある。こうした磁石を複数個積層してモータに組み込んだ場合、その価値は特に高いものとなる。なお、上記の効果を十分に発揮させるとともに、被膜表面を平滑なものとし、被膜表面やその近傍に金属粉末を均一にしかもリッチに存在させ、被膜表面全体に均一な置換めっき被膜が形成されるようにするためには、非導電性被膜の膜厚は1μm〜100μmであることが望ましい。しかしながら、非導電性被膜の膜厚が増大すると、ともすれば、均一な電気めっき被膜の形成に悪影響を及ぼすことがある。従って、この点や磁石の有効体積を考慮すると、膜厚の上限は30μmであることがより望ましい。\n\n【0013】\n\n工程2:\n\n次に、工程1で非導電性被膜がその表面に形成されたボンド磁石を第1金属より貴な電位を有する第2金属のイオンを含む溶液に浸漬することで非導電性被膜表面に第2金属の置換めっき被膜を形成する。第2金属の置換めっき被膜は、磁石表面全体に導電性を付与する機能を有するとともに、第1金属の粉末が非導電性被膜から脱粒することを防止し、磁石表面清浄性の向上に寄与する。この工程は置換めっき被膜を形成するための常法に従って行えばよいが、後の工程において均一で緻密な第3金属の電気めっき被膜を形成するために十分な導電性を確保するという観点からは、0.05μm以上の膜厚を有する被膜を形成することが望ましい。置換めっき被膜を形成する前に、非導電性被膜表面を平滑なものとするとともに非導電性被膜中に均一分散させた第1金属の粉末の活性面を露出させる目的で非導電性被膜がその表面に形成されたボンド磁石をバレル研磨してもよい。なお、置換めっき被膜の膜厚の上限は特段限定されるものではないが、製造コストの点に鑑みれば2μm以下とすることが望ましい。\n\n【0014】\n\n工程3:\n\n最後に、工程2で形成された置換めっき被膜表面に第3金属の電気めっき被膜を形成する。この工程は電気めっき被膜を形成するための常法に従って行えばよい。前述のように、第1金属と第2金属との組合せについては両者の電位差を考慮しなければならないが、第3金属については第2金属との関係において特段考慮しなければならない事情はなく、例えば、Ni、Cu、Sn、Co、Zn、Cr、Ag、Au、Pb、Ptなどのような、通常、電気めっき被膜として形成される金属が第3金属として適用される。従って、第2金属と第3金属が同じ金属であっても何ら問題はない。\n\n【0015】\n\n第2金属と第3金属を同じ金属とする場合、即ち、置換めっき被膜を構成する金属と電気めっき被膜を構成する金属を同じ金属とする場合には、置換めっき被膜を形成する工程2と電気めっき被膜を形成する工程3を一つのめっき浴において行うことが好都合である。即ち、例えば、その表面に非導電性被膜が形成されたボンド磁石をめっき浴に浸漬した当初、電圧をかけないことで置換めっき反応を進行させて置換めっき被膜を形成した後、電圧をかけることで電気めっき被膜を形成することができる。また、その表面に非導電性被膜が形成されたボンド磁石をめっき浴に浸漬した当初から電圧をかけた場合でも、浸漬初期の段階においては被膜の体積抵抗率が高いので、その表面ではまず第1金属と第2金属\n\nの電位差による置換めっき反応が起こって置換めっき被膜が形成される。これにより結果として磁石表面全体に導電性が付与されて、置換めっき被膜表面に均一で緻密な電気めっき被膜が形成される。なお、ボンド磁石の有効体積をできる限り確保するという観点と優れた耐食性を発揮させるという観点からは、電気めっき被膜の膜厚は10μm〜30μmが望ましい。\n\n【0016】\n\n例えば、ボンド磁石表面に置換Niめっき被膜と電気Niめっき被膜を一つのめっき浴において形成する場合においては、めっき浴槽は磁石の形状に応じて種々の浴槽を使用することができる。めっき浴としては、ワット浴、スルファミン酸浴、ウッド浴などの公知のめっき浴を用いればよい。第1金属の粉末を分散させた樹脂からなる非導電性被膜表面に密着性に優れた置換Niめっき被膜を形成するためには、例えば、低ニッケル高硫酸塩浴などを使用し、第1金属とニッケルとの間の過度な置換効率(置換Niめっき被膜の成膜速度)を抑制することが望ましい。好適な低ニッケル高硫酸塩浴としては、硫酸ニッケル·5水和物100g/L〜170g/L、硫酸ナトリウム160g/L〜270g/L、塩化アンモニウム8g/L〜18g/L、ホウ酸13g/L〜23g/Lからなるめっき浴が挙げられる。めっき浴のpHは4.0〜8.0とすることが望ましい。4.0未満であると酸性条件に不安定な希土類系ボンド磁石に対して悪影響を及ぼす恐れがある一方、8.0を超えると形成された置換Niめっき被膜の密着性が劣る恐れがあるからである。また、めっき浴のpHを4.0〜8.0とすることには、Niよりも卑な電位を有する第1金属が急激に溶出して粗雑な置換Niめっき被膜が形成され、その表面に形成される電気Niめっき被膜との密着性に悪影響を及ぼすといったことを効果的に抑制する目的もある。めっき浴の浴温は30℃〜70℃とすることが望ましい。30℃未満であると形成された置換Niめっき被膜の表面が粗雑なものになる恐れがある一方、70℃を超えると浴温管理が難しく、均一な置換Niめっき被膜が形成されない恐れがあるからである。このようなめっき浴を用いて置換Niめっき被膜を形成した後に電気Niめっき被膜を形成するに際しては、電流密度は0.2A/dm2〜20A/dm2とすることが望ましい。0.2A/dm2未満であると成膜速度が遅くて生産性に劣る恐れがある一方、20A/dm2を超えると形成された電気Niめっき被膜の表面が粗雑なものとなり、ピンホールが多数発生する恐れがあるからである。なお、陽極には電解Ni板を用いるが、Niの溶出を安定させるために、電解Ni板としてSを含有したニッケルチップを使用することが望ましい。\n\n【0017】\n\n例えば、ボンド磁石表面に置換Cuめっき被膜と電気Cuめっき被膜を一つのめっき浴において形成する場合においても、めっき浴槽は磁石の形状に応じて種々の浴槽を使用することができる。めっき浴のpHは5.0〜8.5であることが望ましい。5.0未満であると酸性条件に不安定な希土類系ボンド磁石に対して悪影響を及ぼす恐れがある一方、8.5を超えると形成された置換Cuめっき被膜の密着性が劣る恐れがあるからである。めっき浴の浴温は25℃〜70℃とすることが望ましい。25℃未満であると形成された置換Cuめっき被膜の表面が粗雑なものになる恐れがある一方、70℃を超えると浴温管理が難しく、均一な置換Cuめっき被膜が形成されない恐れがあるからである。このようなめっき浴を用いて置換Cuめっき被膜を形成した後に電気Cuめっき被膜を形成するに際しては、電流密度は0.1A/dm2〜5.0A/dm2とすることが望ましい。0.1A/dm2未満であると成膜速度が遅くて生産性に劣る恐れがある一方、5.0A/dm2を超えると形成された電気Cuめっき被膜の表面が粗雑なものとなり、ピンホールが多数発生する恐れがあるからである。なお、めっき浴としてはボンド磁石に対する腐食性と浸透性が低い中性Cuめっき浴が望ましく、とりわけ、硫酸銅とエチレンジアミン四酢酸と亜硫酸ナトリウムを主成分とする中性Cu-EDTA浴が望ましい。\n\n【0018】\n\n本発明の製造方法をリング状ボンド磁石に適用した場合、ともすれば、その内側表面に局部的凸部が発生する場合がある。この現象は第1金属の粉末を分散させた樹脂からなる非\n\n導電性被膜の主体として使用した樹脂の硬度が低い場合に散見されることから、この現象を回避するためには、非導電性被膜の主体として使用する樹脂は硬度が高いもの、具体的には、樹脂自体の硬化時のロックウェル硬度がM80以上のもの、例えば、フェノール樹脂(M110)、エポキシ樹脂(M80)、アクリル樹脂(M80)、ポリエステル樹脂(M80)、ポリイミド樹脂(M128)などを使用することが望ましい。とりわけ、このような樹脂の中でも、ポリイミド樹脂に代表される耐熱性熱硬化性樹脂、いわゆる、スーパーエンジニアリングプラスチックは、磁石に熱と荷重が加わった場合でも、樹脂部分が軟化してしまって樹脂によって分散されていた第1金属の粉末が結合性を獲得し、その結果、体積抵抗率が低下して非導電性被膜としての特性が劣化してしまうといったことを効果的に防止する作用を有する、即ち、非導電性被膜に耐熱性を付与する作用を有する点においてより望ましい。なお、複数の樹脂を混合して使用する場合においては、混合樹脂自体の硬化時のロックウェル硬度がM80以上となるように個々の樹脂を組み合わせて使用することが望ましい。例えば、エポキシ樹脂とポリイミド樹脂との混合樹脂は、混合樹脂自体の硬化時のロックウェル硬度がM80以上であり、相溶性に優れるとともに、金属粉末の分散性にも優れ、さらに、上記のように耐熱性の点においても優れることから望ましい混合樹脂といえる。また、電気めっき被膜を形成するためのめっき浴に添加される光沢剤、例えば、芳香族スルフォンアミドや芳香族スルフォンイミドなどのサッカリン系光沢剤、2-ブチン-1,4-ジオールなどのブチンジオール系光沢剤の添加量を調整することによって、非導電性被膜表面に積層形成されためっき被膜の応力を緩和し、局部的凸部の発生を回避するようにしてもよい。\n\n【0019】\n\nなお、電気めっき被膜の上に、更に別の電気めっき被膜などを積層形成してもよい。このような構成を採用することによって、ボンド磁石の耐食性や機械的強度などの特性を増強·補完したり、更なる機能性を付与したりすることができる。\n\n【0020】\n\n本発明が適用される希土類系永久磁石のうち、ボンド磁石は、磁性粉と樹脂バインダーを主成分とするものであれば磁気的等方性ボンド磁石であっても磁気的異方性ボンド磁石であってもよい。また、樹脂バインダーにより結合形成されたものの他、金属バインダーや無機バインダーなどにより結合成形されたものであってもよい。さらに、バインダーにフィラーを含むものであってもよい。\n\n【0021】\n\n希土類系ボンド磁石としては、種々の組成のものや結晶構造のものが知られているが、これらすべてが本発明の対象となる。\n\n例えば、特開平9-92515号公報に記載されているような異方性R-Fe-B系ボンド磁石、特開平8-203714号公報に記載されているようなソフト磁性相(例えば、α-FeやFe3B)とハード磁性相(Nd2Fe14B)を有するNd-Fe-B系ナノコンポジット磁石、従来から広く使用されている液体急冷法により作成された等方性Nd-Fe-B系磁石粉末(例えば、商品名:MQP-B·MQI社製)を用いたボンド磁石などが挙げられる。\n\nまた、特公平5-82041号公報記載の(Fe1-xRx)1-yNy(0.07≦x≦0.3,0.001≦y≦0.2)で表されるR-Fe-N系ボンド磁石などが挙げられる。\n\n【0022】\n\nなお、希土類系ボンド磁石を構成する磁性粉は、希土類系永久磁石合金を溶解し、鋳造後に粉砕する溶解粉砕法、一度焼結磁石を作成した後、これを粉砕する焼結体粉砕法、Ca還元にて直接磁性粉を得る直接還元拡散法、溶解ジェットキャスターで希土類系永久磁石合金のリボン箔を得、これを粉砕·焼純する急冷合金法、希土類系永久磁石合金を溶解し、これをアトマイズで粉末化して熱処理するアトマイズ法、原料金属を粉末化した後、メカニカルアロイングにて微粉末化して熱処理するメカニカルアロイ法などの方法で得ることができる。\n\nまた、R-Fe-N系ボンド磁石を構成する磁性粉は、希土類系永久磁石合金を粉砕し、\n\nこれを窒素ガス中またはアンモニアガス中で窒化した後、微粉末化するガス窒化法などの方法でも得ることができる。\n\n【0023】\n\n本発明の効果は、希土類系永久磁石を構成する磁性粉の組成、結晶構造、異方性の有無などにより異なるものではない。従って、希土類系永久磁石がボンド磁石であっても焼結磁石であっても、目的とする効果を得ることができる。\n\n【0024】\n\n【実施例】\n\n本発明を以下の実施例と比較例によってさらに詳細に説明するが、本発明はこれに限定されるものではない。なお、以下の実施例と比較例は、急冷合金法で作製した、Nd:12原子%、Fe:77原子%、B:6原子%、Co:5原子%の組成からなる平均長径150μmの合金粉末にエポキシ樹脂を2wt%加えて混練し、686N/mm2の圧力で圧縮成形した後、150℃で1時間キュアすることによって作製された、外径30mm×内径28mm×長さ4mmのリング状ボンド磁石(以下、磁石体試験片と称する)を用いて行った。\n\n【0025】\n\n実施例1:\n\n非導電性の亜鉛粉末分散樹脂としてエポローバル(ローバル社製の商品名:亜鉛粉末の平均粒径は4μmで硬化時のロックウェル硬度がM80のエポキシ樹脂を主体とする)を使用し、これをエポローバル専用シンナー(ローバル社製の商品名)で希釈した後(重量比でエポローバル:シンナー=1:0.5)、均一に攪拌することにより非導電性の亜鉛粉末分散樹脂溶液を調製した。得られた溶液をガン口径1.5mmのエアスプレー装置を使用し、吹付圧力0.2MPaの条件にて磁石体試験片表面全面に吹付け、スプレー塗装を行った後、常温(20℃)における60分間の乾燥と200℃における30分間の焼付けを行い、亜鉛粉末の分散量が96重量%である膜厚15μm(断面観察による)の非導電性被膜(体積抵抗率3×105Ω·cm:JIS-H0505による)を磁石体試験片表面に形成した。この亜鉛粉末を分散させた樹脂からなる非導電性被膜を有する磁石体試験片について、35℃の5重量%食塩水を噴霧するという塩水噴霧試験を行ったところ、500時間経過後も外観に変化が見られた磁石体試験片は存在しなかった(n=50)。\n\n25個の亜鉛粉末を分散させた樹脂からなる非導電性被膜を有する磁石体試験片を容量2.8Lのバレル槽に直径4mmのアルミナメディア2.0Lとともに投入し、振幅1.0mm、振動数60Hzの条件にて30分間バレル研磨した。バレル研磨が施された非導電性被膜を有する磁石体試験片を3分間超音波水洗した後、硫酸ニッケル·5水和物240g/L、塩化ニッケル·5水和物45g/L、ホウ酸35g/Lを含み、炭酸ニッケルでpHを4.2に調整した液温55℃のワット浴に磁石体試験片を浸漬し、30分間電圧をかけずに非導電性被膜表面に置換Niめっき被膜を形成した。25個の磁石体試験片の内の5個をこの時点でワット浴から取り出し、形成された置換Niめっき被膜の膜厚を調べたところ、その平均値は1μmであった(蛍光X線観察による)。\n\n残りの20個の磁石体試験片について、その後、電圧をかけて電流密度1.5A/dm2の条件にて90分間電気Niめっき処理を行い、置換Niめっき被膜表面に電気Niめっき被膜を形成した。\n\n以上のようにして得られた最表面に電気Niめっき被膜を有する磁石体試験片を3分間超音波水洗した後、100℃にて60分間乾燥させた。\n\n20個の磁石体試験片の最表面の電気Niめっき被膜を拡大鏡(×4)にて外観検査したところ、ピンホールや突起や異物付着などを有する不良品は存在せず、全てが均質な被膜で良品と評価された。非導電性被膜表面に形成されたNiめっき被膜の総厚の平均値(n=5)は25μmであったことから(蛍光X線観察による)、電気Niめっき被膜の膜厚の平均値(n=5)は24μmであることがわかった。\n\n15個の最表面に電気Niめっき被膜を有する磁石体試験片に対して温度60℃×相対湿度90%の高温高湿条件下に500時間存置するという耐食性試験を行ったところ、いず\n\nれの磁石体試験片についても発錆や被膜膨れや局部的凸部などの外観異常は見受けられなかった。\n\n【0026】\n\n比較例1:\n\n平均粒径が4μmの亜鉛粉末75重量%、キシレン22重量%、エポミック(三井化学社製の商品名:硬化時のロックウェル硬度がM80の1液型エポキシ樹脂)3重量%を混合し、均一に攪拌することにより導電性の亜鉛粉末分散樹脂溶液を調製した。得られた溶液をガン口径1.5mmのエアスプレー装置を使用し、吹付圧力0.2MPaの条件にて磁石体試験片表面全面に吹付け、スプレー塗装を行った後、常温(20℃)における60分間の乾燥と200℃における30分間の焼付けを行い、亜鉛粉末の分散量が96重量%である膜厚15μm(断面観察による)の導電性被膜(体積抵抗率5×10-1Ω·cm:JIS-H0505による)を磁石体試験片表面に形成した。この亜鉛粉末を分散させた樹脂からなる導電性被膜を有する磁石体試験片について、35℃の5重量%食塩水を噴霧するという塩水噴霧試験を行ったところ、500時間経過後には発錆した磁石体試験片が2個存在した(n=50)。\n\n【0027】\n\n実施例2:\n\n実施例1と同じ非導電性の亜鉛粉末分散樹脂溶液を使用し、実施例1と同じ工程を経て、バレル研磨が施された亜鉛粉末を分散させた樹脂からなる非導電性被膜を有する磁石体試験片を得た。このバレル研磨が施された非導電性被膜を有する磁石体試験片を3分間超音波水洗した後、実施例1と同じワット浴に磁石体試験片を浸漬した。実施例2においては実施例1と異なり、浸漬当初から電圧をかけて電流密度1.5A/dm2の条件にて120分間電気Niめっき処理を行い、最表面に電気Niめっき被膜を形成した。\n\n以上のようにして得られた最表面に電気Niめっき被膜を有する磁石体試験片を3分間超音波水洗した後、100℃にて60分間乾燥させた。\n\n20個の磁石体試験片の最表面の電気Niめっき被膜を拡大鏡(×4)にて外観検査したところ、ピンホールや突起や異物付着などを有する不良品は存在せず、全てが均質な被膜で良品と評価された。非導電性被膜表面に形成されたNiめっき被膜の総厚の平均値(n=5)は25μmであった(蛍光X線観察による)。実施例2においては非導電性被膜表面に形成された置換Niめっき被膜の膜厚は測定できないが、以上のような良質の電気Niめっき被膜が最表面に形成されることは、その下層に置換Niめっき被膜が形成され、その表面全体に導電性が付与されていることに起因するものであると推察された。\n\n15個の最表面に電気Niめっき被膜を有する磁石体試験片に対して温度60℃×相対湿度90%の高温高湿条件下に500時間存置するという耐食性試験を行ったところ、いずれの磁石体試験片についても発錆や被膜膨れや局部的凸部などの外観異常は見受けられなかった。\n\n【0028】\n\n比較例2:\n\n導電性のニッケル粉末分散樹脂としてエレシャットNo.10EMC(大橋化学工業社製の商品名:ニッケル粉末の平均粒径は5μmで硬化時のロックウェル硬度がM80のアクリル樹脂を主体とする)を使用し、これを合成樹脂塗料用シンナーNo.5600(大橋化学工業社製の商品名)で希釈した後(重量比でエレシャット:シンナー=1:0.5)、均一に攪拌することにより導電性のニッケル粉末分散樹脂溶液を調製した。得られた溶液をガン口径1.5mmのエアスプレー装置を使用し、吹付圧力0.2MPaの条件にて磁石体試験片表面全面に吹付け、スプレー塗装を行った後、常温(20℃)における60分間の乾燥と200℃における30分間の焼付けを行い、ニッケル粉末の分散量が66重量%である膜厚15μm(断面観察による)の導電性被膜(体積抵抗率2×10-1Ω·cm:JIS-H0505による)を磁石体試験片表面に形成した。\n\n実施例1と同じ工程を経て、バレル研磨が施されたニッケル粉末を分散させた樹脂からなる導電性被膜を有する磁石体試験片を得、このバレル研磨が施された導電性被膜を有する\n\n磁石体試験片を3分間超音波水洗した後、実施例1と同じワット浴に磁石体試験片を浸漬し、浸漬当初から電圧をかけて電流密度1.5A/dm2の条件にて120分間電気Niめっき処理を行い、最表面に電気Niめっき被膜を形成した。\n\n以上のようにして得られた最表面に電気Niめっき被膜を有する磁石体試験片を3分間超音波水洗した後、100℃にて60分間乾燥させた。\n\n20個の磁石体試験片の最表面の電気Niめっき被膜を拡大鏡(×4)にて外観検査したところ、いずれの被膜についてもピンホール、突起、異物付着の少なくとも一つが観察されるとともにめっきムラが大きく、全てが不良品と評価された。導電性被膜表面に形成されたNiめっき被膜の総厚の平均値(n=5)は25μmであった(蛍光X線観察による)。以上の結果は、比較例2においては電気Niめっき被膜の下層に置換Niめっき被膜が形成されなかったために、良質の電気Niめっき被膜が形成されるに足る導電性を付与することができなかったことに起因するものであると推察された。\n\n15個の最表面に電気Niめっき被膜を有する磁石体試験片に対して温度60℃×相対湿度90%の高温高湿条件下に500時間存置するという耐食性試験を行ったところ、いずれの磁石体試験片についても発錆や被膜膨れや局部的凸部などの外観異常が発生した。\n\n【0029】\n\n実施例3:\n\n導電性のニッケル粉末分散樹脂としてエレシャットNo.10EMC(大橋化学工業社製の商品名:ニッケル粉末の平均粒径は5μmで硬化時のロックウェル硬度がM80のアクリル樹脂を主体とする)を使用し、これをサンコートNo.503(長島特殊塗料社製の商品名:硬化時のロックウェル硬度がM80のエポキシ樹脂を主体とする)とともに合成樹脂塗料用シンナーNo.5600(大橋化学工業社製の商品名)で希釈するとともに(重量比でエレシャット:サンコート:シンナー=1:0.2:0.5/混合樹脂自体の硬化時のロックウェル硬度はM80)、さらにディスパロン♯2150(楠本化成社製の商品名:アニオン性分散媒)0.5重量%を添加して、均一に攪拌することにより非導電性のニッケル粉末分散樹脂溶液を調製した。得られた溶液をガン口径1.5mmのエアスプレー装置を使用し、吹付圧力0.2MPaの条件にて磁石体試験片表面全面に吹付け、スプレー塗装を行った後、常温(20℃)における60分間の乾燥と200℃における30分間の焼付けを行い、ニッケル粉末の分散量が55重量%である膜厚15μm(断面観察による)の非導電性被膜(体積抵抗率4×104Ω·cm:JIS-H0505による)を磁石体試験片表面に形成した。\n\n実施例1と同じ工程を経て、バレル研磨が施されたニッケル粉末を分散させた樹脂からなる非導電性被膜を有する磁石体試験片を得、このバレル研磨が施された非導電性被膜を有する磁石体試験片を3分間超音波水洗した後、硫酸銅·5水和物25g/L、エチレンジアミン四酢酸2ナトリウム55g/L、酒石酸ナトリウム·2水和物28.2g/L、硫酸ナトリウム71g/L、亜硫酸ナトリウム25.2g/Lを含み、水酸化ナトリウムでpHを6.8に調整した液温40℃のCuめっき浴に磁石体試験片を浸漬し、30分間電圧をかけずに非導電性被膜表面に置換Cuめっき被膜を形成した。25個の磁石体試験片の内の5個をこの時点でCuめっき浴から取り出し、形成された置換Cuめっき被膜の膜厚を調べたところ、その平均値は2μmであった(蛍光X線観察による)。\n\n残りの20個の磁石体試験片について、その後、電圧をかけて電流密度1.5A/dm2の条件にて90分間電気Cuめっき処理を行い、置換Cuめっき被膜表面に電気Cuめっき被膜を形成した。\n\n以上のようにして得られた最表面に電気Cuめっき被膜を有する磁石体試験片を3分間超音波水洗した後、100℃にて60分間乾燥させた。\n\n20個の磁石体試験片の最表面の電気Cuめっき被膜を拡大鏡(×4)にて外観検査したところ、ピンホールや突起や異物付着などを有する不良品は存在せず、全てが均質な被膜で良品と評価された。非導電性被膜表面に形成されたCuめっき被膜の総厚の平均値(n=5)は24μmであったことから(蛍光X線観察による)、電気Cuめっき被膜の膜厚の平均値(n=5)は22μmであることがわかった。\n\n15個の最表面に電気Cuめっき被膜を有する磁石体試験片に対して温度60℃×相対湿度90%の高温高湿条件下に500時間存置するという耐食性試験を行ったところ、いずれの磁石体試験片についても若干茶色に変色したが発錆や被膜膨れや局部的凸部などは見受けられなかった。\n\n【0030】\n\n実施例4:\n\n実施例1と同様にして作成したバレル研磨が施された非導電性被膜を有する磁石体試験片を3分間超音波水洗した後、硫酸ニッケル·5水和物133g/L、硫酸ナトリウム213g/L、塩化アンモニウム13g/L、ホウ酸18g/Lを含み、水酸化ナトリウムでpHを5.8に調整した液温50℃の低ニッケル高硫酸塩浴に磁石体試験片を浸漬し、30分間電圧をかけずに非導電性被膜表面に膜厚1μmの置換Niめっき被膜を形成した(蛍光X線観察による)。その後、電圧をかけて電流密度1.5A/dm2の条件にて90分間電気Niめっき処理を行い、置換Niめっき被膜表面に膜厚24μmの電気Niめっき被膜を形成した(蛍光X線観察による)。\n\n以上のようにして得られた最表面に電気Niめっき被膜を有する磁石体試験片を3分間超音波水洗した後、100℃にて60分間乾燥させた。磁石体試験片の最表面の電気Niめっき被膜を拡大鏡(×4)にて外観検査したところ、ピンホールや突起や異物付着などの外観異常は見受けられなかった。また、この最表面に電気Niめっき被膜を有する磁石体試験片に対して温度60℃×相対湿度90%の高温高湿条件下に500時間存置するという耐食性試験を行ったところ、発錆や被膜膨れや局部的凸部などの外観異常は見受けられなかった。さらに、この最表面に電気Niめっき被膜を有する磁石体試験片に対して120℃のホットプレートに3分間静置するという熱衝撃試験を行ったところ、非導電性被膜と置換Niめっき被膜との密着性不良を原因とする外観異常は見受けられなかった。\n\n【0031】\n\n実施例5:\n\n非導電性の亜鉛粉末分散樹脂としてエポローバル(ローバル社製の商品名:亜鉛粉末の平均粒径は4μmで硬化時のロックウェル硬度がM80のエポキシ樹脂を主体とする)を使用し、これをBANI(丸善石油化学社製の商品名:硬化時のロックウェル硬度がM128のポリイミド樹脂)とともにエポローバル専用シンナー(ローバル社製の商品名)で希釈した後(重量比でエポローバル:BANI:シンナー=1:0.2:0.5/混合樹脂自体の硬化時のロックウェル硬度はM90)、均一に攪拌することにより非導電性の亜鉛粉末分散樹脂溶液を調製した。得られた溶液をガン口径1.5mmのエアスプレー装置を使用し、吹付圧力0.2MPaの条件にて磁石体試験片表面全面に吹付け、スプレー塗装を行った後、常温(20℃)における60分間の乾燥と200℃における30分間の焼付けを行い、亜鉛粉末の分散量が77重量%である膜厚10μm(断面観察による)の非導電性被膜(体積抵抗率2×106Ω·cm:JIS-H0505による)を磁石体試験片表面に形成した。\n\nこの亜鉛粉末を分散させた樹脂からなる非導電性被膜を有する磁石体試験片に対し、実施例1と同様にしてバレル研磨を行った。バレル研磨が施された非導電性被膜を有する磁石体試験片を3分間超音波水洗した後、実施例1と同じ工程を経て、非導電性被膜表面に膜厚1μmの置換Niめっき被膜を形成し、さらに置換Niめっき被膜表面に膜厚24μmの電気Niめっき被膜を形成した(蛍光X線観察による)。\n\n以上のようにして得られた最表面に電気Niめっき被膜を有する磁石体試験片を3分間超音波水洗した後、100℃にて60分間乾燥させた。磁石体試験片の最表面の電気Niめっき被膜を拡大鏡(×4)にて外観検査したところ、ピンホールや突起や異物付着などの外観異常は見受けられなかった。また、この最表面に電気Niめっき被膜を有する磁石体試験片に対して温度60℃×相対湿度90%の高温高湿条件下に500時間存置するという耐食性試験を行ったところ、発錆や被膜膨れや局部的凸部などの外観異常は見受けられなかった。さらに、この最表面に電気Niめっき被膜を有する磁石体試験片に対して120℃のホットプレートに3分間静置するという熱衝撃試験を行ったところ、非導電性被膜\n\nと置換Niめっき被膜との密着性不良を原因とする外観異常は見受けられなかった。\n\n【0032】\n\n実施例6:\n\n実施例5と同様にして作成したバレル研磨が施された非導電性被膜を有する磁石体試験片を3分間超音波水洗した後、実施例4と同じ工程を経て、非導電性被膜表面に膜厚1μmの置換Niめっき被膜を形成し、さらに置換Niめっき被膜表面に膜厚24μmの電気Niめっき被膜を形成した(蛍光X線観察による)。以上のようにして得られた最表面に電気Niめっき被膜を有する磁石体試験片を3分間超音波水洗した後、100℃にて60分間乾燥させた。磁石体試験片の最表面の電気Niめっき被膜を拡大鏡(×4)にて外観検査したところ、ピンホールや突起や異物付着などの外観異常は見受けられなかった。また、この最表面に電気Niめっき被膜を有する磁石体試験片に対して温度60℃×相対湿度90%の高温高湿条件下に500時間存置するという耐食性試験を行ったところ、発錆や被膜膨れや局部的凸部などの外観異常は見受けられなかった。さらに、この最表面に電気Niめっき被膜を有する磁石体試験片に対して120℃のホットプレートに3分間静置するという熱衝撃試験を行ったところ、非導電性被膜と置換Niめっき被膜との密着性不良を原因とする外観異常は見受けられなかった。\n\n【0033】\n\n【発明の効果】\n\n本発明によれば、表面に均一で緻密な電気めっき被膜を優れた密着性でもって有することで高い耐食性を示す希土類系永久磁石の製造方法が提供される。', '【0001】\n\n技术领域\n\n本发明涉及一种制造稀土永磁体的制造方法,其通过具有均匀和致密的电镀膜具有优异的表面的粘附性而具有高耐腐蚀性。\n\n【0002】\n\n发明背景\n\n稀土基永磁体如ND-Fe-B基永磁体代表的R-Fe-B永磁体使用,使用且具有廉价的材料,并且具有高磁性,其在今天的各个领域中使用。\n\n近年来,在电子工业和家电行业中,使用稀土的永磁磁铁,零件缩小和缩小,相应地,磁铁本身也被敦促小型化和复杂的形状。。\n\n从这个角度来看,具有易于形状成型的粘合磁体被吸引到磁粉和树脂粘合剂上,并且已经在各个领域进行了实际应用。\n\n【0003】\n\n稀土基永磁体包括R.因此,如果在没有表面处理的情况下使用,由于含有轻微酸,碱或水分和生锈的影响,腐蚀从表面进行,这导致磁性的劣化和变化。它将是。而且,\n\n如果锈蚀的磁体被结合到诸如磁路的装置中,则锈蚀可以散布到污染的外围部件。\n\n为了解决这个问题,尝试在磁体表面上作为耐腐蚀膜形成电镀膜。然而,当电镀膜直接形成在粘合的磁体表面上时,通过构成磁体表面的树脂粘合剂和这些磁性粉末之间的树脂部分绝缘的磁粉在导电性低。不能形成均匀和致密的涂层,并且结果,可能发生松孔(非条纹部分)和生锈可能导致。\n\n【0004】\n\n本发明要解决的问题\n\n鉴于上述点,作为在赋予整个粘合磁体表面的电导率之后形成电镀膜的方法,例如,专利No.2719658(日本专利公开No.4-276095)出版物是树脂键合磁体的表面。用导电材料粉末施加混合物以形成导电树脂膜后,提出了一种施加电镀的方法。然而,在该方法中,整个树脂表面不一定赋予整个树脂表面,因此表面上不需要具有低导电性的部分,因此,它是均匀的问题不能形成致密的电镀膜。另外,由于在进行电镀时,在磁体的表面上形成的树脂涂层是导电的,因此当进行电镀时腐蚀,所以腐蚀通过涂层内部的导电部分对磁体表面进行的问题。是。\n\n此外,在上述专利公开中,在将化学镀施加到粘合的磁体表面之后,还提出了一种施加电镀的方法,但在该方法中,当进行无电镀时使用处理溶液。包含在内的各种组件水或加工液保留在磁体等的孔中,并且可以腐蚀磁体腐蚀,并且对所形成的薄膜本身的磁体表面的粘合也是优异的。很难说。\n\n因此,由于上述方法尚未实现,因此等待了一种在粘合磁体表面上形成电镀膜的新方法,因为它不能获得令人满意的可能结果。如果开发出一个好的方法,很自然是非常有价值的,因为它不仅对粘合磁铁施加了出色的效果,而且是烧结磁铁。\n\n因此,本发明的目的是提供一种制备稀土永磁体的制造方法,其通过具有优异的粘合性具有优异的均匀和致密的电镀膜,其呈现高耐腐蚀性。\n\n【0005】\n\n[解决问题的手段]\n\n如权利要求1所述的上述点,通过各种考虑,如权利要求1所述的上述点来完成本发明的稀土永磁体的制造方法,如权利要求1所述的作为稀土基永磁表面,平均粒度为2μm至30μm由树脂组成,其中第一金属的粉末分散体积电阻率为1×104ω·cm或更多形成非导电涂层后,将非导电涂层形成磁体浸入含有比第一金属的第二金属的第二金属离子的第二金属离子的溶液中,并且第二金属替代镀层在非导电涂层表面上铺板。形成膜,在取代的电镀膜表面上形成第三金属电镀膜。\n\n3.根据权利要求2所述的制造方法的特征在于,在根据权利要求1所述的制造方法中,稀土基永磁体是粘合磁体。。\n\n魔鬼索赔33.如上述制造方法的权利要求1或者2在所述制造方法中,其特征在于,非导电膜中的第一金属粉末的分散量为50重量%至99重量%。。\n\n魔鬼索赔44.如权利要求1所述的制造方法3在任何所述方法中描述的制造方法中,非导电涂层的膜厚度为1微米至100微米。\n\n还,54.如权利要求1所述的制造方法4在任何第一金属中描述的制造方法中,第二金属是用锌的镍。\n\n还,64.如权利要求1所述的制造方法4在第一金属中的任何一个中描述的制造方法中,第一金属是镍,第二金属是铜。\n\n还,74.如权利要求1所述的制造方法6在任何相同的制造方法中,第二金属和第三金属是相同的金属。\n\n还,8描述的制造方法是7在描述中描述的制造方法中,在一个电镀浴中进行形成取代的电镀膜的过程和形成电镀膜的步骤。\n\n还,94.如权利要求1所述的制造方法8在任何一个取代的电镀膜中描述的制造方法中,取代镀膜的膜厚度为0.05μm至2μm。\n\n另外,本发明的稀土永磁体是10如上所述,在稀土系统的恒磁铁的表面上,平均粒度为2μm至30μm由树脂组成,其中第一金属的粉末分散体积电阻率为1×104ω·cm或更多在形成非导电涂层之后,形成非导电涂层磁体,该磁铁形成含有第二金属离子的溶液,该溶液大于第一金属以在非导电涂层表面上形成第二金属的取代镀膜,可以通过在取代的电镀膜表面上形成第三金属电镀膜来获得。\n\n另外,本发明的稀土永磁体是11如上所述,在稀土系统的恒磁铁的表面上,平均粒度为2μm至30μm由树脂组成,其中第一金属的粉末分散体积电阻率为1×104ω·cm或更多形成非导电涂层,并且通过比第一金属的第二金属的取代电镀膜在第一金属的表面上形成第三金属的电镀膜。\n\n另外,本发明的稀土永磁体是12如上所述,在稀土系统的恒磁铁的表面上,平均粒度为2μm至30μm由树脂组成,其中第一金属的粉末分散体积电阻率为1×104ω·cm或更多形成非导电涂层,并且在第一金属的表面上形成第二金属的取代镀膜。\n\n另外,本发明的稀土永磁体是13如上所述,在稀土系统的恒磁铁的表面上,平均粒度为2μm至30μm由树脂组成,其中第一金属的粉末分散体积电阻率为1×104ω·cm或更多形成非导电涂层。\n\n【0006】\n\n发明内容\n\n通过形成由由一种树脂制成的非导电涂层形成的制造本发明的稀土基永磁体的方法,其中第一金属的粉末分散在稀土基永磁体的表面上,然后从第一金属使用非导电涂层形成磁体。通过浸入含有具有珍贵潜力的第二金属的第二金属离子的溶液中,在非导电上形成第二金属的取代镀膜在取代的电镀涂层表面上形成涂层表面和第三金属电镀膜。其特征在于它。\n\n【0007】\n\n在制造本发明的稀土基永磁体的方法中,由一种由一种树脂制成的非导电涂层,其中第一金属的粉末分散在稀土基永磁体的表面上,以及第一金属存在于涂层表面及其附近。通过利用源自粉末的取代的电镀反应,在整个非导电涂层表面上形成第二金属的取代镀膜。结果,结果,将电导率施加到磁体的整个表面上,可以形成均匀和致密的金属电镀膜,其与取代的电镀膜表面具有优异的粘附性。另外,由于在磁体的表面上形成的树脂膜是非导电的,因此在电镀膜中存在诸如针孔和划痕的缺陷,并且即使树脂涂层表面被缺陷腐蚀,它也具有优点腐蚀并不意味着腐蚀在涂层的表面上进行。根据本发明的制造方法,即使稀土基永磁体是粘结磁体,也可以获得上述效果,但这种效果特别有利于粘合磁体。成为。另外,如果使用诸如厌氧粘合剂的粘合剂层叠多个稀土基永磁体,则施加制造本发明的制造方法,包括磁体和磁体之间的粘合剂厚度部分。电镀膜可以形成在整个夹层磁铁表面上。因此,由于可以防止粘附劣化原因(水等)的粘附劣化导致(水等),因此可以获得粘合性防止防止效果。\n\n在下文中,当这施加到用于制造本发明的稀土永磁体的方法的粘合磁体时。\n\n订单将按顺序描述。\n\n【0008】\n\n第1步:\n\n首先,形成由由粘合磁体表面上分散在粘结磁体表面上的树脂制成的非导电涂层。作为作为非导电涂层的主体的树脂,例如,热固性树脂,特别是酚醛树脂,环氧树脂,三聚氰胺树脂,丙烯酸树脂,聚酯树脂,聚氨酯树脂,聚酰亚胺树脂,苯乙烯丙烯酸树脂等。它单独使用或组合多种树脂。\n\n【0009】\n\n虽然分散在树脂涂层中的第一金属的粉末的类型没有特别限制,但是第一金属具有比第二金属的第一金属的电位,以便在后续步骤中引起取代的电镀反应是必要的。因此,考虑到与第二金属的电位差异适当地选择第一金属。第一金属和第二金属的组合的具体实例包括具有第一金属和第一金属的第二金属的组合,第二金属是用镍的铜的组合。\n\n【0010】\n\n由一种树脂组成的非导电膜,其中第一金属的粉末分散,例如,不导电树脂本身,其中第一金属的粉末被分散,并且如有必要,这种树脂用作有机溶剂通过稀释稀释制备的溶液使用制备的处理液体的溶液进行,喷涂在磁体的表面上或浸入加工液中以进行浸涂,然后通过干燥形成。将金属粉末分散的一些非导电树脂是可商购的,并且可以容易地获得。即使将第一金属的粉末分散的树脂,也通过加入有机分散培养基以均匀分散和分离单独的金属粉末来使处理液成为未导电的。我可以做到。在这种情况下,有机分散介质是阴离子分散介质(脂族多元羧酸,聚醚聚酯羧酸盐,聚合物聚乙酸多胺盐,高分子量多元羧酸长链胺盐等),非离子性分散介质(羧酸盐盐,磺酸盐和铵盐如聚氧乙烯烷基醚和脱水山梨糖醇酯),聚合物分散介质(水溶性环氧羧酸盐,磺酸盐和铵盐等。丙烯酸共聚物,尼加拉瓦等)等适合使用金属粉末的亲和力和成本。此外,只要它是可以形成非导电膜的加工液,它本身就是导电的。在制备处理液期间,可以适当地使用诸如球磨机,磨损器或砂磨机的分散器。\n\n另外,在执行用于形成由分散第一金属粉末的树脂制成的树脂制成的非导电膜之前,可以施加一种清洁装置,该清洁装置通过磁体表面上的筒抛光是本身的。\n\n【0011】\n\n有利的是,非导电涂层中的金属粉末是取代电镀反应的起点,并且在涂层表面的整个表面上形成取代的电镀膜,有利的是金属粉末均匀地存在于涂层表面附近及其附近。它是。因此,从该观点来看,期望制备处理液,使得膜中的金属粉末的分散量为50重量%或更高。尽管膜中金属粉末的分散量的上限不受限制,但通常难以制备用于形成具有超过99重量%的金属粉末分散的涂层的处理溶液(自金属问题以来的处理。粉末聚集和处理液的粘度在液体中增加,液体处理性质较差的问题。因此,在制造中,膜中金属粉末的分散量的上限为99重量%。\n\n另外,为了制备经处理的溶液,其中金属粉末均匀分散在金属粉末的平均粒径是2μm至30μm在那2它为μm至12μm希望它为2μm至10μm比可取的。\n\n【0012】\n\n由一种树脂组成的非导电膜,其中如上所述分散形成的第一金属的粉末,但是即使涂层是非导电的,即使涂层的表面被腐蚀,也通过涂层的内部腐蚀。它可以防止磁体表面的进度,它本身对磁铁耐腐蚀性\n\n它具有施加的效果。这种效果是涂层具有的自修复作用(第一金属的腐蚀化合物(第一金属是ZnCl当锌时2·4ZN(哦)2和ZnO等落落)由于由于树脂或划痕的体积引起的体积引起的体积增加,以及第一金属或第一金属的牺牲腐蚀保护作用。等被认为是贡献。使这种效果更加可靠在1×10不导电涂层体积电阻率4ω·cm或更多。通过将上述有机分散介质加入到处理液中以抑制处理液中的金属粉末的聚集沉降,可以增加体积电阻率,增强金属粉末的分散性。另外,在表面上掺入具有对表面上的高体积电阻率的非导电涂层的粘合磁铁,并且当使用并使用时,在磁体内产生的涡电流小。因此,由于由于涡流引起的发热引起的散热磁体很小,因此可以抑制电动机效率的降低。当这样的磁体是多层并将其掺入电动机中时,该值特别高。此外,上述效果充分表现出来,膜表面光滑,金属粉末均匀地存在于涂层表面的表面和其附近,并且在整个表面上形成均匀的取代镀膜涂层表面。为了确保非导电涂层的膜厚度优选为1μm至100μm。然而,当非导电涂层的膜厚度增加时,可能对均匀电镀膜的形成产生不利影响。因此,考虑到这一点和磁体的有效体积,更优选的是,膜厚度的上限为30μm。\n\n【0013】\n\n第2步:\n\n接下来,在步骤1中,形成在非导电涂层的表面上形成的键磁体形成在含有从第一金属的电位的电位的电位的第二金属离子的溶液上形成,第二金属表面是第二金属表面涂层表面。形成金属取代镀膜。第二金属的取代镀膜具有在整个磁体表面赋予电导率的函数,并且防止第一金属粉末从非导电膜中除去,并有助于改善磁体表面清洁。。该步骤可以根据用于形成取代的电镀膜的常规方法进行,但是从确保在后面的过程中确保均匀和致密金属的电镀膜的电镀膜的观点来说,希望形成具有膜厚度的膜0.05μm或更大。在形成替代的电镀膜之前,进行非导电涂层以暴露在非导电涂层中光滑且均匀地分散在非导电涂层中的第一金属粉末的活性表面。形成在表面上的键合磁体可以是筒。虽然取代电镀膜的膜厚度的上限没有特别限制,但考虑到制造成本的点,希望将其设定为2μm或更小。\n\n【0014】\n\n第3步:\n\n最后,在步骤2中形成的取代的电镀膜表面上形成第三金属的电镀膜。该过程可以根据用于形成电镀膜的常规方法进行。如上所述,必须考虑第一金属和第二金属之间的电位差,但是在与第二金属的关系中,没有必要考虑第三金属,例如,形成为电镀膜的金属是施加为第三金属,如Ni,Cu,Sn,Co,Zn,Cr,Ag,Au,Pb,Pt等。因此,即使第二金属和第三金属是相同的金属,也没有问题。\n\n【0015】\n\n当第二金属和第三金属是相同的金属,即,构成取代的电镀膜的金属和构成电镀膜的金属用作相同的金属,过程2和形成取代电镀膜的电力执行在一个电镀浴中形成电镀膜的步骤3是方便的。即,例如,在将非导电涂层的形成在表面上浸入电镀浴中的粘合磁体之后,更换电镀反应是前进的,并且形成替换镀膜,然后施加电压。电镀电压。电镀可以形成薄膜。另外,即使当从开始到电镀浴上施加在表面上形成非导电涂层的粘结磁体时,即使在浸渍的阶段,也使涂层的体积电阻率高,所以首先在表面上。 1金属和第二金属\n\n由由取代镀膜的电位差异引起的取代电镀反应形成。结果,将电导率施加到磁体的整个表面上,并且在取代的电镀膜表面上形成均匀和致密的电镀膜。从从确保粘合磁体的有效体积的观点出现出优异的耐腐蚀性的观点来看,电镀膜的膜厚度优选为10μm至30μm。\n\n【0016】\n\n例如,在粘合磁体表面上形成取代的Ni电镀涂层和电Ni电镀膜的情况下,电镀浴可以根据磁体的形状使用各种桶。作为电镀浴,可以使用诸如瓦特浴,氨基氨酸浴,木浴等的已知的镀浴浴。为了形成与由树脂制成的非导电涂层表面的粘合性优异的取代的Ni电镀膜,其中第一金属的粉末分散,例如低镍高硫酸盐等,并且希望抑制镍之间取代效率的过度置换效率(取代的镍镀膜的沉积速率)。合适的低镍高硫酸盐包括硫酸镍,将水合物100g / L至170g / L,硫酸钠160g / L至270g / L,氯化铵8g / L至18g / L,13g硼酸的镀浴由L至23克/升组成。希望电镀浴的pH为4.0至8.0。如果小于4.0,则可能对酸性条件不稳定的稀土基粘合磁体产生不利影响,而如果它超过8.0,则所形成的取代的Ni镀膜的粘合可能是差的。此外,为了将电镀浴4.0至8.0的pH设置为8.0,迅速洗脱具有低于Ni的电位的第一金属以形成粗取代的Ni镀膜,并且在表面上形成电气。还有有效地抑制它对镍胶膜的粘合性产生不利影响的对象。理想的是,电镀浴的浴温为30℃至70℃。如果形成的取代的Ni电镀膜的表面小于30℃。使用这种电镀浴形成取代的Ni电镀膜时,电流密度为0.2A / dm2〜20a / dm2是理想的。 0.2a / dm.2如果小于或小于成膜速度,则可能差不多生产,而20A / DM2形成的电气Ni镀膜的表面是粗糙化的,因为形成的电镀镍膜的表面可能是粗糙的,并且可能发生大量的针孔。另外,尽管电解Ni板用于阳极,但希望使用含有S作为电解Ni板的镍芯片以稳定Ni的洗脱。\n\n【0017】\n\n例如,即使在一个电镀浴中的粘结磁体表面上形成取代的Cu电镀膜和电Cu电镀膜的情况下,电镀桶也可以根据磁体的形状使用各种桶。理想的是,电镀浴的pH为5.0至8.5。如果小于5.0,则可以对酸性条件不稳定的稀土基粘合磁体产生不利影响,而如果它超过8.5,则形成的取代的Cu电镀膜的粘附性可能差。理想的是,电镀浴的浴温为25℃至70℃。当形成的取代的Cu电镀膜的表面小于25℃时。使用这种电镀浴形成取代的Cu电镀膜时,电流密度为0.1A / DM2〜5.0a / dm2是理想的。 0.1A / DM.2如果小于那个,沉积速度慢,生产率可能低于生产率,5.0A / DM2形成超过的电Cu电镀膜的表面变得粗糙,并且可能发生大量的针孔。另外,希望具有低腐蚀性和渗透性磁体的中性Cu电镀浴,特别是希望具有硫酸铜和乙二胺四乙酸和亚硫酸钠作为主要成分的中性Cu-EDTA浴。\n\n【0018】\n\n当本发明的制造方法应用于环形键合磁体时,可以在内表面上产生局部凸部。这种现象不是由散射第一金属粉末的树脂组成\n\n由于用作导电涂层主体的树脂的硬度低,以避免这种现象,所以用作非导电涂层主体的树脂高,特别是锁定井硬度树脂本身的固化时间是M80或更高,例如酚醛树脂(M110),环氧树脂(M80),丙烯酸树脂(M80),聚酯树脂(M80),聚酰亚胺树脂(M128)等。是理想的去做。其中包括聚酰亚胺树脂,所谓的超级工程塑料所代表的耐热热固性树脂,即使加热和载荷施加到磁体,树脂部分也被软化,第一金属分散的粉末具有a有效防止体积电阻率和非导电涂层的特性的功能劣化,结果是,更希望的是,它具有赋予非导电涂层的耐热性的作用。另外,在混合并使用多个树脂的情况下,希望组合使用单独的树脂,使得在混合树脂本身的固化时的锁定间硬度是M80或更高。例如,环氧树脂和聚酰亚胺树脂的混合树脂在混合树脂本身的固化时是M80或更高,并且具有优异的相容性,并且在金属粉末的分散性方面也优异,如上所述。它可以被说是一种理想的混合树脂,因为它具有优异的耐热性。此外,加入到电镀浴中以形成电镀涂层的光泽剂,例如,糖精光泽,例如芳族磺酰胺和芳族磺酰亚胺,2-utin-1,4-二醇但Dinzone。通过调节系统增白剂的添加量,膜的应力形成在非导电涂层表面上,可以减轻涂膜的应力,并且可以避免局部凸部的产生。\n\n【0019】\n\n另外,可以在电镀膜上形成更多的电镀膜等。通过采用这种配置,可以提高粘合磁体的耐腐蚀性和机械强度的特性,或者可以赋予进一步的功能。\n\n【0020】\n\n在施加本发明的稀土基永磁体中,即使磁粉和树脂粘合剂主要组成,键合磁体也是磁各向同性粘合磁体或磁各向异性粘合磁体。它可能是。此外,除了由树脂粘合剂的粘合之外,它还可以通过金属粘合剂或无机粘合剂等粘合成粘合。此外,粘合剂可含有填料。\n\n【0021】\n\n作为稀土基粘结磁体,已知各种组合物和具有晶体结构的那些,但所有这些是本发明的主题。\n\n例如,如JP-A-9-92515中所述,如JP-A-9-9-92515,软磁相(例如,α-fe和fe3b)和硬磁相(nd2Fe.14B)基于ND-Fe-B的纳米复合磁体,可提及常规广泛使用的液体淬火方法(例如,产品名称:使用公司的MQP-B,MQI键磁铁等)。\n\n此外,日本专利公开号5-82041中描述的(FE)1-xR.x的)1-yN.y(0.07≤x≤0.3,0.001≤y≤0.2)R-Fe-n型键合磁体等。\n\n【0022】\n\n构成稀土基粘接磁体的磁性粉末溶解稀土基永磁合金,并在铸造后研磨破碎的研磨方法,一旦烧结磁体形成,然后烧结体磨削方法将破碎。直接通过减少稀土永磁合金的带状箔和淬火合金方法,淬火合金法,稀土基永磁工合金的稀土化方法,稀土化工,溶解磁粉的减排扩散方法。并且这是粉末状的粉末和热处理的雾化方法和原料金属可以通过粉末金属获得,并且可以通过机械合金方法获得,该方法是用机械合金处理的微粉和热处理。\n\n另外,构成R-Fe-N基粘接磁体的磁粉压碎了稀土基永磁合金,\n\n在氮气中氮化的氮气或氨气中,它也可以通过诸如待粉碎的气体氮化方法的方法获得。\n\n【0023】\n\n根据构成稀土永磁体,晶体结构,各向异性的存在或不存在的磁性粉末的组成,本发明的效果不具有不同的。因此,即使稀土基永磁体是粘结的磁体或烧结磁体,也可以获得目标效果。\n\n【0024】\n\n【例子】\n\n将通过以下实施例和比较例更详细地描述本发明,但是本发明不限于此。在以下实施例和比较例中,通过淬火合金法制备,由Nd:12原子%,Fe:77原子%,B:6原子%,CO:5原子%组成的150μm的平均主要直径。将2wt%的环氧树脂加入粉末和捏合686n / mm2在150℃的压力下压缩成型后,使用外径为30mm×长度4的内径为30mm×的环形键合磁体(下文称为磁体型试验片)进行。 mm,通过在150℃下固化制造1小时。米田。\n\n【0025】\n\n例1:\n\n使用Eporival(Robar制造的商品名称)作为非导电锌粉分散树脂(锌粉的平均粒度为4μm,固化时的罗克韦尔硬度主要由M80的环氧树脂组成),表壳用专用稀释剂稀释(叶片公司的商品名)(Epologult:稀释剂= 1:0.5),通过均匀搅拌制备均匀搅拌。得到的溶液为1.5mm的增益直径,并在喷涂0.2MPa的条件下喷涂磁体试验片的整个表面,并在喷涂后,在常温下60分钟(20℃)非导电涂层(体积电阻率3×10通过横截面观察)为15μm(通过横截面观察),其在200℃和200℃下在200℃下进行30分钟。5在磁体试验片的表面上形成ω·cm:JIS-H0505)。当对具有由锌粉分散的树脂组成的具有非导电膜的磁铁型试验件上进行盐喷雾试验时,喷洒35℃的盐水的盐喷雾试验,即使之后也会变化经过500个小时,没有观察到磁体试验片(n = 50)。\n\n具有由通过将锌粉与非导电涂层分散在2.8升的不导电涂层的树脂中由2.8μm的氧化铝介质2.0L和1.0mm的幅度分散而组成的非导电涂层的腐蚀。 ,60 Hz频率的条件。桶抛光30分钟。超声水洗涤后采用桶抛光的非导电涂层是超声水洗3分钟,硫酸镍,5水合物240g / L,氯化镍,5水合物45克/升,35克硼酸磁铁标本在55℃的液体温度下浸入瓦塔浴中。用碳酸镍调节至4.2,在非导电涂层表面上形成取代的Ni电镀膜,没有电压30分钟。。当此时从瓦塔浴中除去5个25磁体试验片中,检查所形成的取代的Ni电镀膜的膜厚度,平均值为1μm(通过荧光X射线观察)。\n\n对于剩余的20磁体试验片,然后,电压施加到电流密度1.5A / DM2在本发明的条件下,在本发明的条件下进行电气Ni电镀处理90分钟,以在取代的Ni电镀膜表面上形成电线镀膜。\n\n将具有电Ni镀膜的磁铁型试验片在最外表面上用电线电镀涂层进行超声波洗涤,然后在100℃下干燥60分钟。\n\n当通过膨胀镜(×4)检查20磁体型试验片的最外面的电镀膜时,没有有缺陷的产品,具有针孔,突起和异物粘附,并且所有均匀的产品被评价为a涂料中的好产品。由于在非导电涂层表面上形成的Ni电镀膜的平均值(n = 5)为25μm(通过荧光X射线观察),因此电镀镍膜的膜厚度的平均值(N发现= 5)是24μm。\n\n当我们进行耐腐蚀性测试时,在ECT-15最外表面上具有电动Ni电镀膜的磁体试验片的温度为90℃和90%的温度,是不可能的进行耐腐蚀性测试。\n\n对于磁铁标本,没有看到诸如生锈和涂层肿胀和局部凸部等实验异常\n\n【0026】\n\n比较例1:\n\n75重量%的锌粉,平均粒径为4μm,二甲苯的22%(Mitsui Chemical Co.,Ltd)的重量计(Mitsui Chemical Co.,Ltd.:锁定在固化时的硬度为1个液体环氧树脂,M80)通过搅拌制备3重量%,均匀,通过搅拌制备导电锌粉分散树脂溶液。得到的溶液为1.5mm的增益直径,并在喷涂0.2MPa的条件下喷涂磁体试验片的整个表面,并在喷涂后,在常温下60分钟(20℃)导电涂层(体积电阻率5×10通过横截面观察),厚度为15μm(通过横截面观察),在200℃和200℃下的30分钟的烘烤烘烤。-1在磁体试验片的表面上形成ω·cm:JIS-H0505)。当进行盐雾试验以喷射5重量%的35℃时,对于具有由锌粉分散的树脂制成的导电膜的磁体型试验片,喷洒盐水的盐喷雾试验是喷涂,500小时后,生锈的磁铁有两个体标本(n = 50)。\n\n【0027】\n\n例2:\n\n具有由由与实施例1中的相同的方法分散在其中由与实施例1中相同的方法分散的树脂制成的磁体,其中通过与实施例1中的相同的方法分散,得到测试片。在用超声水洗涤具有经受该筒抛光的非导电涂层的超声水试剂3分钟后,将磁铁样品浸入与实施例1中相同的瓦浴中。在示例2中,与第一实施例不同,从浸没到电流密度1.5a / dm的开始施加电压2在本发明的条件下,在本发明的条件下进行电气Ni镀120分钟,以在最外表面上形成电线镀膜。\n\n将具有电Ni镀膜的磁铁型试验片在最外表面上用电线电镀涂层进行超声波洗涤,然后在100℃下干燥60分钟。\n\n当通过膨胀镜(×4)检查20磁体型试验片的最外面的电镀膜时,没有有缺陷的产品,具有针孔,突起和异物粘附,并且所有均匀的产品被评价为a涂料中的好产品。在非导电涂层表面上形成的Ni电镀膜的总厚度(n = 5)的平均值(n = 5)为25μm(通过荧光X射线观察)。在实施例2中,尽管不能测量形成在非导电涂层表面上的取代的Ni电镀膜的膜厚度,但是上述高质量的高质量电镀膜形成在最外表面上,以取代下层。推测形成Ni镀膜并将导电施加到整个表面上。\n\n在高温高湿度条件下在60℃×90%的温度温度下在60℃×90%温度下的温度下,在60℃×90%的温度下在90%的高温和高湿度条件下进行耐腐蚀性试验。 90%在60℃的温度下为磁体试验片,电动Ni电镀膜在ECT视图表面上。任何磁体检查条也没有被视为外观异常,如生锈和涂层膨胀和局部凸部。\n\n【0028】\n\n比较例2:\n\n电镍粉末分散作为树脂(Ohashi Chemical Industries,Ltd的产品名称:镍粉的平均粒度为5μm,固化时的罗克韦尔硬度主要由M80的丙烯酸树脂组成)。和之后用合成树脂涂料稀释剂稀释No.5600(Ohashi Chemical Industries,Ltd.制造的商品名)(重量比)通过均匀搅拌通过搅拌导电镍。制备粉末分散树脂溶液。得到的溶液为1.5mm的增益直径,并在喷涂0.2MPa的条件下喷涂磁体试验片的整个表面,并在喷涂后,在常温下60分钟(20℃)导电涂层(体积电阻率2×10通过横截面观察),厚度为15μm(通过横截面观察),干燥度为镍粉的干燥度的66%(横截面观察)和镍的分散量粉末通过干燥进行。-1在磁体试验片的表面上形成ω·cm:JIS-H0505)。\n\n通过与实施例1中的相同的过程,获得了具有由其制成的导电涂层制成的导电涂层,得到分散对经受筒抛光的镍粉末的树脂,并且进行对该桶抛光的导电膜进行。\n\n通过用磁体型试验片洗涤3分钟后,将磁体样品浸入与实施例1中相同的瓦浴中,并且从浸没1.5A / DM的开始,电压施加到电流密度为1.5 A / DM.2在本发明的条件下,在本发明的条件下进行电气Ni镀120分钟,以在最外表面上形成电线镀膜。\n\n将具有电Ni镀膜的磁铁型试验片在最外表面上用电线电镀涂层进行超声波洗涤,然后在100℃下干燥60分钟。\n\n当通过膨胀镜(×4)检查20磁体型试验片的最外表面上的电ni电镀膜时,可以观察到任何涂层的针孔,突起和异物粘连中的至少一种。Mura是大而且一切都被评为有缺陷的产品。在导电涂层表面上形成的Ni电镀膜的总厚度的平均值(n = 5)为25μm(通过荧光X射线观察)。作为比较例2的结果,在比较例2中,由于在电镍膜的下层中未形成取代的Ni电镀膜,因此不能将高质量的电镍镀膜施加到导电性的形成。似乎是由于。\n\n在高温高湿度条件下在60℃×90%的温度温度下在60℃×90%温度下的温度下,在60℃×90%的温度下在90%的高温和高湿度条件下进行耐腐蚀性试验。 90℃的温度为磁体试验片90%,电动Ni镀膜在ECT视图表面上。试验片中的任何磁体,外观异常,如生锈和涂层膨胀和局部凸部发生了。\n\n【0029】\n\n例3:\n\n电镍粉分散体树脂(大桥化学工业株式会社的产品名称:该镍粉的平均颗粒尺寸为5μm,并在固化时的洛氏硬度主要由在M80的丙烯酸类树脂),而这是圣涂布503号,以及用于合成树脂涂料的较薄号5600(商品名由长岛特殊涂料有限公司在固化时有限公司:Lockwell硬度主要是基于在M80的环氧树脂制) (大桥化学工业株式会社稀释制造,产品名称)(重量比:圣涂覆:圣涂覆:稀释剂= 1:0.2:0.5 /混合树脂本身是M80),甚至disparant#2150产品名称:阴离子分散介质)按重量计0.5%的溶液中加入通过均匀地搅拌,以制备不导电的镍粉分散树脂溶液。将所得到的溶液是增益直径为1.5毫米,喷射喷雾压力的0.2兆帕的条件下的磁体试件的整个表面上,并喷洒在常温下涂布,在60分钟后(20℃)在200℃下干燥和3×30分钟4在磁体试验片的表面上形成ω·cm:JIS-H0505)。\n\n通过相同的过程与实施例1中,获得了具有由在其中经受筒式镍粉末被分散的树脂的非导电涂层的磁体型试验片,在非导电性涂层与此桶抛光进行。用磁铁型试验片3分钟,硫酸铜,5水合物25g / L的乙二胺四乙酸2钠55克/升,酒石酸钠28.2克/升,硫酸钠71克/升25.2克超声波水洗涤后亚硫酸钠/升,并将pH调节至6.8,用氢氧化钠,磁铁试样在6.8的液体温度浸渍在铜电镀液,并且没有电压的非导电涂层表面被施加30分钟。甲形成取代的铜镀膜。这时25磁铁体试片的5从镀Cu浴中取出,并检查所形成的取代的镀Cu膜的膜厚度,和2微米(根据荧光X射线观察)的平均值为。\n\n对于剩余的20磁体试验片,然后,电压施加到电流密度1.5A / DM2取代的Cu的条件下进行90分钟,进行电镀Cu镀覆被膜,从而形成电铜镀膜。\n\n具有电镀Cu膜A磁铁型试验片进行超声波水3分钟,然后在100℃下干燥60分钟。\n\n当20磁铁型试验片的最外表面上的电镀Cu膜被膨胀镜(×4)检验中,存在具有针孔,突起和异物附着无缺陷产品,并且一切是均匀的,它被评价为一个好的产品在涂层。的平均值(N = 5)所形成的非导电涂层表面上的镀Cu膜为24μm(由荧光X射线观察),电铜的膜厚的平均值镀膜(N这是发现= 5)为22μm。\n\n耐腐蚀性试验,高温和90%高湿度条件下在60℃下×90%时的温度在90%相对湿度的高温高湿度条件相对于传导到具有电磁铁型试验片铜上15 15镀膜最最体体体,,ろろろろろろろろろろろろろろろろ将试样也从棕色略有不同,但生锈,涂层肿胀,局部凸部等未见。\n\n【0030】\n\n例4:\n\n用非导电性涂层经受相同的方式抛光创建为实施例1中的桶,超声波水洗后3分钟,硫酸镍133克/升,硫酸钠213克/升为13g /超声波水洗涤后的氯化铵18克/升的硼酸,并且pH升以低硫酸镍高浴中在用氢氧化钠调节至pH为5.8的低硫酸镍高浴调节到低硫酸镍高浴,并且电压施加30分钟。取代的Ni镀膜的厚度为1微米,形成在非导电性涂层的表面上(通过荧光X射线观察)。在这之后,电压被施加到一个电流密度1.5A / DM2在90分钟的时间90分钟下进行的电镀镍处理,形成了取代的镍的表面上具有24微米膜厚度的电镀Ni膜镀薄膜(由荧光X射线观察)。\n\n将具有电Ni镀膜的磁铁型试验片在最外表面上用电线电镀涂层进行超声波洗涤,然后在100℃下干燥60分钟。当通过膨胀镜(×4)检验该段试样的最外层表面上的电镀Ni膜,外观异常如针孔,突起和异物附着未见。此外,当在高温和高湿度条件下具有的60℃×90%的温度下,在90%时的温度相对于具有电的Ni的磁体试件进行耐腐蚀性试验镀膜上这最外表面,所述corrustion和涂覆有没有等外观异常肿胀和本地凸部。此外,当进行热冲击试验在120℃的热板上静置3分钟,对于具有电镍的磁体型试验片镀膜在此最外表面,一个非导电涂层和取代的Ni镀膜引起的粘接不良外观异常未见。\n\n【0031】\n\n例5:\n\nBANI BANI使用EPORDOBAL(由罗巴尔制,商品名)作为非导电性锌粉末分散树脂(商品名由石化有限公司:稀释EPORIDODE CHIND(由Robal有限公司)与制造商品名在固化时的Ni-M128聚酰亚胺树脂)(Epologue为重量比)(Epologue:BANI:Cinner = 1:0.2:在混合树脂本身是M90的固化)的时间0.5 / Lockwell硬度,均匀地搅拌,一制备非导电锌粉末分散树脂溶液。将所得到的溶液是增益直径为1.5毫米,喷射喷雾压力的0.2兆帕的条件下的磁体试件的整个表面上,并喷洒在常温下涂布,在60分钟后(20℃)具有重量的锌粉末的分散体的锌粉末的dysproofed量和77%的非导电涂层(通过截面观察体积电阻率2×10),厚度为10μm(由截面观察) 。6在磁体试验片的表面上形成ω·cm:JIS-H0505)。\n\n一种桶抛光是在以相同的方式相对于具有由其中锌粉末分散的树脂的非导电涂层的磁体型试验片进行与实施例1英寸与进行滚磨的非导电涂层超声波水洗涤后,用超声水3分钟,并且在同一过程之后如实施例1中,取代镍具有非导电的表面上的1μm的膜厚度镀膜涂敷膜被形成。此外,形成具有24微米膜厚度的电Ni镀膜上取代镀Ni膜表面(通过荧光X射线观察)。\n\n将具有电Ni镀膜的磁铁型试验片在最外表面上用电线电镀涂层进行超声波洗涤,然后在100℃下干燥60分钟。当通过膨胀镜(×4)检验该段试样的最外层表面上的电镀Ni膜,外观异常如针孔,突起和异物附着未见。此外,当在高温和高湿度条件下具有的60℃×90%的温度下,在90%时的温度相对于具有电的Ni的磁体试件进行耐腐蚀性试验镀膜上这最外表面,所述corrustion和涂覆有没有等外观异常肿胀和本地凸部。此外,当热冲击试验进行至120℃的热板上具有电镍镀覆在该最外表面的磁铁型试验片,一个非导电涂层\n\n和由与取代的镀Ni膜的附着失败外观异常无法看到。\n\n【0032】\n\n例6:\n\n之后,用非导电性涂层经受相同的方式抛光创建为实施例5中筒,后超声波水洗涤水3分钟,在相同的处理后超声波水与实施例4中,非导电涂层表面上的膜A 1微米厚的取代的镀Ni膜形成的,并形成在所述取代的镍具有24微米膜厚度的电镀Ni膜镀膜表面(通过荧光X射线观察)。将具有电Ni镀膜的磁铁型试验片在最外表面上用电线电镀涂层进行超声波洗涤,然后在100℃下干燥60分钟。当通过膨胀镜(×4)检验该段试样的最外层表面上的电镀Ni膜,外观异常如针孔,突起和异物附着未见。此外,当在高温和高湿度条件下具有的60℃×90%的温度下,在90%时的温度相对于具有电的Ni的磁体试件进行耐腐蚀性试验镀膜上这最外表面,所述corrustion和涂覆有没有等外观异常肿胀和本地凸部。此外,当进行热冲击试验在120℃的热板上静置3分钟,对于具有电镍的磁体型试验片镀膜在此最外表面,一个非导电涂层和取代的Ni镀膜引起的粘接不良外观异常未见。\n\n【0033】\n\n【发明效果】\n\n根据本发明,提供了一种制造显示由具有均匀且致密的,优异的粘附性的表面电镀薄膜高的耐腐蚀性的稀土金属基永磁体的方法。');
INSERT INTO `os_patent_instruction_text` VALUES (12961, 22790, 'Technical Field \n\n[0001]The present invention relates to a method for forming a uniform and dense electroplating film with high adhesion strength on the surface of an article, in particular on the surface of a rare earth permanent magnet, yet irrespective of the surface material and the surface properties of the article.\n\nBackground Art \n\n[0002]In order to impart properties such as decorative properties, anti-weathering properties, surface conductivity for antistatic purposes and the like, electromagnetic shielding properties, antibiotic functions, and shock resistance, to articles, metallic films have been formed on the surface of the articles heretofore. Metallic films can be formed by various methods; among them, methods for forming electroplating films by means of electroplating processes are widely employed in practice because they are also suitable for mass production.\n\n[0003]However, in order to form electroplating films on the surface of articles, it is required that the surface of the articles possesses electric conductivity. Hence, electroplating films cannot be directly formed on the surface of an article made of a non-conductive material such as plastics, wood, papers, glass, ceramics, rubbers, and concrete. Furthermore, there are cases in which metallic films are required to be formed on the surface of an article made of a metallic material such as magnesium, aluminum, and titanium, (e.g., housings of cellular phones, laptop personal computers, etc.), however, for example, magnesium is one of the most base metals. Thus, in case an attempt is made to form an electroplating film on the surface of such an article, an abrupt substitution plating reaction occurs at the instant of immersing the article in the plating bath, and this makes the formation of high quality electroplating films unfeasible. Aluminum and titanium are metals that are easily oxidized, and in general, the surface of such metals is covered with extremely dense metal oxide films. Accordingly, although these metals are lower in ionization tendency, the surface potential is elevated to make an electroplating treatment difficult. While it is possible to form electroplating films by removing the metal oxide films from the surface, a special etching technology is needed, and there still remain practical problems due to time constraints, because an electroplating process should be carried out before the metal oxide film is formed again after removing the metal oxide films. Furthermore, there may be employed a method of performing an electroplating process comprising, carrying out the so-called zincate treatment for forming a zinc substituted plating film, while simultaneously applying etching, under a strong alkaline environment by immersing the article in a solution containing sodium hydroxide and zinc hydroxide, and then carrying out the step of forming an electroless plating film, and then carrying out the electroplating process. However, this makes the entire process complicated.\n\n[0004]Furthermore, in case of forming a uniform electroplating film on the surface of an article having pores, fine grooves, or irregularities on the surface thereof, such as wooden bats, bricks, die-castings, and the like, there remain problems to be solved; considerations should be made on not only how to impart electric conductivity to the surface of the article, but also how to ensure surface smoothness of the article.\n\n[0005]Moreover, a corrosion of an article may occur on carrying out an electroplating process in case of an article made of a highly corrosive material such as metallic magnesium; hence, difficulties are found on forming electroplating films on such articles.\n\n[0006]In case of solving the above problems by means of known technologies, there may be employed a method as disclosed in Japanese Patent Laid-Open No. 210183/1986, comprising forming, on the surface of the article, a resin coating made of a resin containing dispersed therein a metallic powder, and then forming an electroless plating film on the surface of the resin coating; an electroplating film can be formed on the thus formed surface of the electroless plating film. However, since an electroless plating film is formed by reacting reducing agents to metallic ions in the plating solution and obtaining metal precipitates as a consequence on the surface of plated articles, not only the adhesiveness to the plated object, but also the film deposition efficiency are poor. Although the film deposition efficiency can be increased by methods using palladium catalysts or platinum catalysts, these methods inevitably increase costs. Furthermore, there is no denying that impurities contained in an electroless plating film and originated from the reducing agents provide negative influences on the formation of electroplating films on the surface of the electroless plating film.\n\n[0007]EP 1 028 437 A1 describes a method of manufacturing R-Fe-B-based bonded magnets whereby a metal coating layer is formed on that magnet surfaces by pressing fine metal pieces into the resin/metal surface constituting the surface of the magnet. As a result, a conductive metal layer is formed on the surface of the magnet.\n\n[0008]Further, EP 0 502 475 A2 describes a method for the production of a bonded magnet having a metal coating provided on the surface thereof. To obtain the coating of a bonded Nd-Fe-B magnet, a mixture of a resin and an electrically conductive material is used, whereafter an electroplating is performed.\n\n[0009]An object of the invention is to provide a method for forming a uniform and dense electroplating film with high adhesion strength on the surface of a rare earth permanent magnet, yet irrespective of the surface material and the surface properties of the rare earth permanent magnet.\n\nDisclosure of the Invention \n\n[0010]In the light of the aforementioned circumstances, the present inventors accomplished the invention as a result of extensive studies; thus, a method for forming an electroplating film on the surface of a rare earth permanent magnet according to the invention as disclosed in claim 1 comprises: forming on the surface of the rare earth permanent magnet, a non-conductive resin coating made of a resin containing dispersed therein a powder of a first metal wherein the volume resistivity of the non-conductive coating is 1 x 10 4[0011]According to a formation method of claim 2, there is disclosed the method as in claim 1, wherein the rare earth permanent magnet is a bonded magnet.\n\n[0012]In accordance with a formation method of claim 3, there is disclosed the method as in claim 1, wherein the powder of the first metal is dispersed in the resin coating at a content in a range of from 50 wt% to 99 wt%.\n\n[0013]According to a formation method of claim 4, there is disclosed the method as in claim 1, wherein the average particle diameter of the powder of the first metal is in a range of from 0.001 µm to 30 µm.\n\n[0014]In accordance with a formation method of claim 5, there is disclosed the method as in claim 1, wherein the film thickness of the resin coating is in a range of from 1 µm to 100 µm.\n\n[0015]According to a formation method of claim 6, there is disclosed the method as in claim 1, wherein the first metal is zinc and the second metal is nickel or tin.\n\n[0016]According to a formation method of claim 7, there is disclosed the method as in claim 1, wherein the first metal is nickel and the second metal is copper.\n\n[0017]According to a formation method of claim 8, there is disclosed the method as in Claim 1, wherein the second metal and the third metal are the same.\n\n[0018]According to a formation method of claim 9, there is disclosed the method as in Claim 8, wherein the step of forming the substituted plating film and the step of forming the electroplating film are carried out in the same plating bath.\n\n[0019]In accordance with a formation method of claim 10, there is disclosed the method as in Claim 1, wherein the film thickness of the substituted plating film is in a range of from 0.05 µm to 2 µm.\n\n[0020]A rare earth permanent magnet having an electroplating film on the surface thereof according to the invention is, as disclosed in claim 11, characterized by being produced by forming a non-conductive coating on the surface of a rare earth permanent magnet using a resin containing dispersed therein a powder of a first metal wherein the volume resistivity of the non-conductive coating is 1 x 10 4Best Mode for Carrying Out the Invention \n\n[0021]The method for forming an electroplating film on the surface of an article, in particular on the surface of a rare earth permanent magnet, according to the invention is characterized by that it comprises: forming on the surface of the article, a non-conductive resin coating made of a resin containing dispersed therein a powder of a first metal wherein the volume resistivity of the non-conductive coating is 1 x 10 4[0022]In the method for forming an electroplating film on the surface of an article according to the invention, a resin coating made of a resin containing dispersed therein a powder of a first metal is formed on the surface of an article, and then, a second-metal substituted plating film having high adhesion strength is formed on the entire surface of the resin coating by utilizing a substitution plating reaction which is initiated from the powder of the first metal that is present on the surface of the resin coating or in the vicinity thereof. In this manner, as a result, electric conductivity is imparted to the entire surface of the article, and a uniform and dense electroplating film of the third metal can be formed with high adhesion strength on the surface of the substituted plating film. Accordingly, a uniform and dense electroplating film can be formed with high adhesion strength on the surface of the article made of any type of material, such as plastics, wood, papers, glass, ceramics, rubbers, and concrete, yet irrespective of the surface material and the surface properties of the article.\n\n[0023]The method for forming an electroplating film on the surface of an article according to the invention is explained step by step below.\n\nStep 1:\n\n[0024]Firstly, a resin coating made of a resin containing dispersed therein a powder of a first metal is formed on the surface of an article. As the resin for use as the base of the resin coating, there can be mentioned, for example, a thermosetting resin. More specifically, there can be mentioned, for instance, phenolic resin, epoxy resin, melamine resin, acrylic resin, polyester resin, urethane resin, polyimide resin, styrene-acrylic resin, and mixed resins thereof.\n\n[0025]There is no particular limitation concerning the kinds of the powder of the first metal to be dispersed in the resin coating, however, in order to initiate the substitution plating reaction in the later step, it is essential that the potential of the first metal is lower than that of the second metal. Accordingly, the first metal should be properly selected by taking the potential difference between the first and the second metals into consideration. As a specific example of the combination of the first and the second metals, there can be mentioned a combination using zinc as the first metal and nickel or tin as the second metal, or a combination using nickel as the first metal and copper as the second metal.\n\n[0026]The resin coating made of a resin containing dispersed therein the powder of the first metal may be an electrically conductive coating or a non-conductive coating, however, a non-conductive coating is preferred for a resin coating that is formed on the surface of an article made of a highly corrosive material such as metallic magnesium, or for a resin coating that is formed on the surface of a highly corrosive rare earth permanent magnet, which is to be stated hereinafter. Even in case the surface of the resin coating should be corroded on carrying out a substituted plating process or an electroplating process, or in case the surface of the resin coating should be corroded through the defects such as pinholes, and flaws, which are generated in the electroplating films formed on the substituted plating film provided on the surface of the resin coating, further progress of the corrosion through the interior of the resin coating to the surface of the article can be prevented from occurring.\n\n[0027]Rare earth permanent magnets such as R-Fe-B based permanent magnets, which are represented by a Nd-Fe-B based permanent magnet, are now utilized in various fields because of their high magnetic properties , and because of their allowing use of low cost materials abundant in resources.\n\n[0028]Recently, in the electronic industries and in the electric appliance industries where rare earth permanent magnets are used, more compact components are used and further down sizing is under way. Accordingly, more compact magnets or magnets with more complicated shapes are demanded.\n\n[0029]From this point of view, bonded magnets based mainly on magnetic powder and resin binders, which are easily tailored into desired shapes, are attracting attention, and are brought into practical use in various fields.\n\n[0030]Rare earth permanent magnets contain R (rare earth element), which is easily oxidized and corroded in air. Thus, in case they are used without applying surface treatment, the corrosion proceeds from the surface due to the effect of acids, alkalis, water, and the like that are slightly present in air, and rust generates as a result. This causes deterioration or fluctuation in magnetic properties. Moreover, in case magnets having rust generated thereon are assembled in devices such as magnetic circuits, it is feared that rust is scattered to contaminate peripheral components.\n\n[0031]In order to overcome the problems above, attempts are made to form electroplating films on the surface of magnets as anticorrosive films. However, in case an attempt is made to form the electroplating film directly on the surface of the bonded magnet, a uniform and dense film is unfeasible, because the magnetic powder constituting the surface of the magnet, which is insulated by the resin binder, or the resin part interposed among such magnetic powder has low conductivity. As a result, pinholes (non-plated parts) generate to induce rust generation.\n\n[0032]In the light of such circumstances, as a method of forming an electroplating film after imparting electric conductivity to the entire surface of the bonded magnet, there is proposed, for instance, in Japanese Patent No. 2719658 (Japanese Patent Laid-Open No. 276095/1992), a method comprising coating the surface of the bonded magnet with a mixture of a resin and a powder of an electrically conductive material to form an electrically conductive resin coating, and then applying electroplating. However, when viewed microscopically, this method fails to impart sufficiently high electric conductivity to the entire surface of the resin. Thus, it is impossible to completely eliminate parts of low electric conductivity from the surface. As a result, there occurs a problem that a uniform and dense electroplating film cannot be formed. Further problem is that, since the resin coating formed on the surface of the magnet is electrically conductive, if the surface of the resin coating should be corroded at the time of carrying out the electroplating process and the like, the corrosion proceeds through the electrically conductive part of the interior of the coating to the surface of the magnet.\n\n[0033]The patent above also proposes a method comprising carrying out the electroplating process after applying electroless plating to the surface of the bonded magnet. According to this method, however, water that is used as the solvent for the processing solution or various components contained in the processing solution remain in the pores and the like of the magnet when an electroless plating or the like is applied, and these occasionally cause the corrosion of the magnet, as to make the adhesiveness of the film thus obtained to the surface of the magnet yet insufficient.\n\n[0034]Accordingly, it can be understood that satisfactory results are not yet achieved by the methods proposed heretofore, and novel methods for forming electroplating films on the surface of bonded magnets are keenly demanded. The present invention enables the formation of a uniform and dense electroplating film with high adhesion strength on the surface of bonded magnets, and by providing resin coating on the surface of the bonded magnet as a non-conductive coating, an excellent corrosion resistance can be imparted to the bonded magnet.\n\n[0035]The non-conductive coating made of a resin containing dispersed therein a powder of a first metal can be obtained, for instance, by spray-coating the surface of the article with the non-conductive resin itself, in which the powder of the first metal is dispersed, or, if necessary, with a processing solution prepared by diluting the resin with an organic solvent, or, by performing immersion coating, in which the article is immersed in the processing solution and then by drying them. Such a non-conductive resin containing dispersed therein the metallic powder are easily obtained, since some of them are commercially available. Furthermore, an electrically conductive resin dispersed therein a powder of a first metal may be rendered a non-conductive processing solution by adding organic dispersants, such that the metallic powder is uniformly dispersed and isolated. In such a case, preferable organic dispersants for use from the viewpoint of affinity with the metallic powder and cost are, for example, anionic dispersants (e.g., aliphatic polycarboxylic acids, polyether polyester carboxylates, high molecular polyester acid polyamine salts, high molecular weight polycarboxylic acid long chain amine salts, and the like), nonionic dispersants (e.g., polyoxyethylene alkyl ether, carboxylic acid salts such as sorbitan ester, sulfonic acid salts, ammonium salts, and the like), high molecular dispersants (e.g., carboxylic acid salts, sulfonic acid salts, ammonium salts of water-soluble epoxy and the like, styrene-acrylic acid copolymer, glue, and the like). Furthermore, so long as the processing solution is capable of forming non-conductive coatings, the solution itself may be electrically conductive. On preparing the processing solution, a disperser such as a ball mill, an attritor, and a sand mill, may be used properly.\n\n[0036]In order to form a substituted plating film on the entire surface of the resin coating by initiating the substitution plating reaction from the metallic powder contained in the resin coating, the metallic powder should be present uniformly and abundantly on the surface of the resin coating or in the vicinity thereof. From this point of view, the processing solution is preferably prepared as such that the metallic powder should be dispersed in the resin coating at an amount of 50 wt% or more. The upper limit of the amount of the metallic powder dispersion in the resin coating is not limited, however, in general, it is difficult to prepare a processing solution for forming a resin coating containing dispersed therein the metallic powder at a concentration exceeding 99 wt% (since there occurs problems such as the coagulation and settling of the metallic powder in the processing solution, or the difficulty in handling due to an increase in viscosity of the processing solution). Accordingly, from the viewpoint of the production, the upper limit of the amount of the metallic powder dispersion in the resin coating is 99 wt%.\n\n[0037]In order to prepare a processing solution containing uniformly dispersed therein the metallic powder, the average particle diameter of the metallic powder is preferably in a range of from 0.001 µm to 30 µm, more preferably, from 0.01 µm to 12 µm, and further preferably, from 2 µm to 10 µm.\n\n[0038]In case the resin coating made of the resin containing dispersed therein the powder of the first metal thus formed is non-conductive, the non-conductive coating prevents corrosion from proceeding deeply through the interior of the coating to reach the surface of the article, even in case the surface of the coating is corroded. Thus, the resin coating exerts an effect of imparting corrosion resistance to the article. It is believed that the self-repairing function (i.e., by generating corrosion compounds of the first metal (in case the first metal is zinc, the compounds are, for example, ZnCl 2 ·4Zn(OH) 2 , and ZnO,), or by swelling the resin and thereby increasing the volume of the resin coating, such that the coating itself should exhibit function of burying defects, such as pinholes and flaws) of the coating, as well as the sacrificial anticorrosion function of the first metal, contributes to the aforementioned effect. In order to further ensure this effect, the volume resistivity of the non-conductive coating is preferably set to 1 × 10 4[0039]In order to sufficiently exhibit the effect above, and to form a uniform substituted plating film on the entire surface of the resin coating by rendering a smooth surface to the resin coating and providing the metallic powder uniformly and abundantly on the surface of the resin coating and in the vicinity thereof, the resin coating is preferably provided at a film thickness in a range of from 1 µm to 100 µm. However, in case the film thickness of the resin coating is increased, there may be cases in which the resin coating unfavorably influences the formation of a uniform electroplating film. In case the article is a rare earth permanent magnet, accordingly, by taking the point above and the effective volume of the magnet into consideration, the upper limit of the film thickness of the resin coating is preferably 30 µm.\n\n[0040]Furthermore, in order to improve the adhesiveness of the surface of the article with the resin coating at the interface, known cleaning methods such as degreasing of the surface of the article or barrel polishing for imparting anchoring effect may be performed prior to the process for forming the resin coating made of the resin containing dispersed therein the powder of the first metal.\n\nStep 2:\n\n[0041]Then, a second-metal substituted plating film is formed on the surface of the resin coating by immersing the resin-coated article obtained in step 1 in a solution containing ions of a second metal having an ionization potential nobler than that of the first metal. The second-metal substituted plating film not only has the function of imparting electric conductivity to the entire surface of the article, but also contributes to improve the surface cleanliness of the article by preventing dropping out of the first metallic powder particles from occurring on the resin coating. This step can be carried out in accordance with an ordinary method for forming a substituted plating film, however, from the viewpoint of assuring sufficiently high conductivity for forming a uniform and dense electroplating film of the third metal in the later processes, it is preferred to form a film having a film thickness of 0.05 µm or thicker. Prior to forming the substituted plating film, in order to obtain a smooth surface on the resin coating and to expose an active surface of the powder of the first metal uniformly dispersed in the resin coating, barrel polishing may be applied to the article having a resin coating formed on the surface thereof. The upper limit of the film thickness of the substituted plating film is not particularly limited, however, in view of production cost, the film thickness is preferably set to 2 µm or less. To achieve the object of imparting decorative properties, surface conductivity for antistatic purposes, and the like, to articles, the product obtained at this step with substituted plating film formed on the surface thereof sufficiently fulfills the effect at a practically satisfactory level.\n\nStep 3:\n\n[0042]Finally, an electroplating film of the third metal is formed on the surface of the substituted plating film obtained in step 2. This step can be carried out in accordance with a known method for forming an electroplating film. As described above, the combination of the first and the second metals must be selected by taking the difference in potential of the metals into consideration; however, there is no particular constraints concerning the relation between the third and the second metals, and usable as the third metal are those generally used for electroplating films, such as Ni, Cu, Sn, Co, Zn, Cr, Ag, Au, Pb and Pt. Accordingly, the same metal may be used as the second and the third metals without any problem.\n\n[0043]In case the same metal is used for the second and the third metals, that is, in case the metal constituting the substituted plating film is used for the electroplating film, a single plating bath can be conveniently employed for both step 2 for forming the substituted plating film and step 3 for forming the electroplating film. More specifically, for example, at the instance the article having the resin coating made of the resin containing dispersed therein the powder of the first metal on the surface thereof is immersed in the plating bath, a substituted plating film is formed by allowing a substitution plating reaction to proceed without applying any voltage, and then, the electroplating film can be formed by applying voltage. Furthermore, even in case voltage is applied at the instance the article having the resin coating made of the resin containing dispersed therein the powder of the first metal on the surface thereof is immersed in the plating bath, a substituted plating film is formed on the surface of the resin coating at first by the substitution plating reaction that occurs according to the potential difference between the first and the second metals, because the volume resistivity of the resin coating is high at the initial stage of immersion. Thus, as a result, electric conductivity is imparted to the entire surface of the article as to form a uniform and dense electroplating film on the surface of the substituted plating film. The film thickness of the electroplating film can be properly set according to purposes. However, from the viewpoint of assuring the effective volume of the magnet while imparting excellent corrosion resistance in case the article is a rare earth permanent magnet, it is preferred that the electroplating film is formed at a film thickness in a range of from 10 µm to 30 µm.\n\n[0044]For instance, in case of forming a Ni substituted plating film and a Ni electroplating film on the surface of a rare earth bonded magnet by using a single plating bath, various types of plating baths may be used depending on the shape of the magnet. As the plating bath, there can be used known plating baths such as Watt\'s bath, sulfamic acid bath, and Wood\'s bath. In order to form a Ni substituted plating film with high adhesion strength on the surface of a non-conductive coating made of a resin containing dispersed therein the powder of the first metal, for instance, a low-nickel high-sulfate bath is preferably used to suppress excessive conversion efficiency (film formation rate of a Ni substituted plating film) between the first metal and nickel. As a preferred low-nickel high-sulfate bath, there can be mentioned a plating bath containing 100 g/L to 170 g/L of nickel sulfate pentahydrate, 160 g/L to 270 g/L of sodium sulfate, 8 g/L to 18 g/L of ammonium chloride, and 13 g/L to 23 g/L of boric acid. The pH value of the plating bath is preferably set in a range of from 4.0 to 8.0. In case pH is lower than 4.0, there is fear of causing negative influences on rare earth bonded magnets that are unstable under acidic conditions; in case pH exceeds 8.0, on the other hand, it is feared that the adhesion strength of the thus generated Ni substituted plating film results low. Furthermore, by setting the pH of the plating bath in a range of from 4.0 to 8.0, it can also achieve the object of effectively suppressing the negative influences on the adhesion strength to the Ni electroplating film which is formed on the surface of a Ni substituted plating film, when a coarse and rough Ni substituted plating film is formed, due to an abrupt elution of the first metal having a potential lower than Ni. The bath temperature of the plating bath is preferably set in a range of from 30°C to 70°C. In case the temperature is lower than 30°C, the Ni substituted plating film may result in a coarse and rough surface; on the other hand, in case the temperature exceeds 70°C, temperature control of the bath becomes difficult as to make the formation of a uniform Ni substituted plating film unfeasible. On forming a Ni electroplating film after forming the Ni substituted plating film by using the plating bath above, the electric current density is preferably set in a range of from 0.2 A/dm 2[0045]In case of forming an Sn substituted plating film and an Sn electroplating film on the surface of a rare earth bonded magnet by using a single plating bath, for instance, various types of plating baths may be used depending on the shape of the magnet. The pH value of the plating bath is preferably set in a range of from 3.5 to 9.0. In case pH is lower than 3.5, there is fear of causing negative influences on rare earth bonded magnets that are unstable under acidic conditions; in case pH exceeds 9.0, on the other hand, it is feared that the adhesion strength of the thus generated Sn substituted plating film results low. The bath temperature of the plating bath is preferably set in a range of from 15°C to 35°C. In case the temperature is lower than 15°C, the Sn substituted plating film may result in a coarse and rough surface; on the other hand, in case the temperature exceeds 35°C, temperature control of the bath becomes difficult as to make the formation of a uniform Sn substituted plating film unfeasible. On forming an Sn electroplating film after forming the Sn substituted plating film by using the plating bath above, the electric current density is preferably set in a range of from 0.1 A/dm 2[0046]Also, in case of forming a Cu substituted plating film and a Cu electroplating film on the surface of a rare earth bonded magnet by using a single plating bath, for instance, various types of plating baths may be used depending on the shape of the magnet. The pH value of the plating bath is preferably set in a range of from 5.0 to 8.5. In case pH is lower than 5.0, there is fear of causing negative influences on rare earth bonded magnets that are unstable under acidic conditions; in case pH exceeds 8.5, on the other hand, it is feared that the adhesion strength of the thus generated Cu substituted plating film results low. The bath temperature of the plating bath is preferably set in a range of from 25°C to 70°C. In case the temperature is lower than 25°C, the Cu substituted plating film may result in a coarse and rough surface; on the other hand, in case the temperature exceeds 70°C, temperature control of the bath becomes difficult as to make the formation of a uniform Cu substituted plating film unfeasible. On forming a Cu electroplating film after forming the Cu substituted plating film by using the plating bath above, the electric current density is preferably set in a range of from 0.1 A/dm 2[0047]In case of forming an electroplating film on the surface of ring-shaped bonded magnets by using the method of the invention, there may occur a case in which protrusions are locally generated on the inner surface of the magnet. This phenomenon is found to occur in case the hardness of the resin for use as the base of the non-conductive coating made of the resin containing dispersed therein the powder of the first metal is low. Accordingly, to avoid this phenomenon from occurring, the resin for use as the base of the non-conductive coating is preferably high in hardness; more specifically, it is preferred to use resins capable of yielding Rockwell hardness of M80 or higher when cured, such as, phenolic resin (M110), epoxy resin (M80), acrylic resin (M80), polyester resin (M80), and polyimide resin (M128). Among them, particularly in the case of the heat resistant thermosetting resins represented by polyimide resin, i.e., the so-called super engineering plastics, those resins effectively function to prevent the degradation of the characteristics as a non-conductive coating from occurring, which degradation occurs due to the fact that the powder of the first metal being dispersed in the resin achieves bonding effect even i', '技术领域 \n\n [0001] 本发明涉及一种在制品的表面上,特别是在稀土永磁体的表面上形成具有高粘附强度的均匀致密的电镀膜的方法,该方法不考虑其表面材料和表面性能。 文章。 \n\n  背景技术 \n\n [0002] 为了赋予制品装饰性,耐候性,用于防静电目的的表面导电性等性能,电磁屏蔽性能,抗生素功能和耐冲击性,迄今为止,在制品的表面上已形成金属膜。  。 金属膜可以通过各种方法形成。 其中,通过电镀工艺形成电镀膜的方法在实践中被广泛采用,因为它们也适合于批量生产。 \n\n [0003] 然而,为了在制品的表面上形成电镀膜,要求制品的表面具有导电性。 因此,不能在由非导电材料制成的制品的表面上直接形成电镀膜,所述制品由诸如塑料,木材,纸,玻璃,陶瓷,橡胶和混凝土之类的材料制成。 此外,在某些情况下,需要在由诸如镁,铝和钛的金属材料制成的物品的表面上形成金属膜(例如,蜂窝电话,膝上型个人计算机的外壳等), 但是,例如,镁是最基本的金属之一。 因此,如果试图在这样的制品的表面上形成电镀膜,则在将制品浸入电镀浴中的瞬间发生突然的置换电镀反应,这使得高质量电镀膜的形成不可行。  。 铝和钛是易于氧化的金属,并且通常,这些金属的表面覆盖有非常致密的金属氧化物膜。 因此,尽管这些金属的离子化趋势较低,但是表面电势升高从而使得电镀处理困难。 尽管可以通过从表面去除金属氧化物膜来形成电镀膜,但是需要特殊的蚀刻技术,并且由于时间限制,仍然存在实际问题,因为应该在金属氧化物膜被去除之前进行电镀工艺。 去除金属氧化物膜后再次形成。 此外,可以采用执行电镀工艺的方法,该方法包括在强碱性环境下通过将制品浸入含有钠的溶液中,在形成锌取代的镀膜的同时进行所谓的锌酸盐处理,同时进行蚀刻。 氢氧化物和氢氧化锌,然后进行形成化学镀膜的步骤,然后进行电镀过程。 但是,这使整个过程变得复杂。 \n\n [0004] 此外,在诸如木棒,砖,压铸件之类的在其表面上具有孔,细槽或凹凸的制品的表面上形成均匀的电镀膜的情况下,仍然有待解决的问题。  ; 不仅应考虑如何赋予制品表面导电性,还应考虑如何确保制品的表面光滑度。 \n\n [0005] 此外,在由金属镁等高腐蚀性材料制成的物品的情况下,在进行电镀处理时可能会产生物品的腐蚀。 因此,发现在这种制品上形成电镀膜有困难。 \n\n [0006] 在通过已知技术解决上述问题的情况下,可以采用如日本专利特开No.210183 / 1986中公开的方法,该方法包括在制品的表面上形成由树脂制成的树脂涂层。 含有分散在其中的金属粉末,然后在树脂涂层的表面上形成化学镀膜。 可以在由此形成的化学镀膜的表面上形成电镀膜。 但是,由于通过使还原剂与镀液中的金属离子反应而形成化学镀膜,其结果是在被镀物的表面上产生金属析出物,因此不仅对被镀物的密合性,而且成膜效率也高。 较差的。 尽管可以通过使用钯催化剂或铂催化剂的方法来提高膜沉积效率,但是这些方法不可避免地增加了成本。 此外,不可否认的是,化学镀膜中所含的,源自还原剂的杂质对化学镀膜的表面上的电镀膜的形成产生不利影响。 \n\n [0007] EP 1 028 437 A1描述了一种制造基于R-Fe-B的粘结磁体的方法,其中通过将细小金属片压入构成磁体表面的树脂/金属表面中在该磁体表面上形成金属涂层。 结果,在磁体的表面上形成导电金属层。 \n\n [0008] 此外,EP 0 502 475 A2描述了一种制造粘结磁体的方法,该粘结磁体的表面具有金属涂层。 为了获得粘结的Nd-Fe-B磁体的涂层,使用树脂和导电材料的混合物,然后进行电镀。 \n\n [0009] 本发明的目的是提供一种在稀土永磁体的表面上形成具有高粘附强度的均匀且致密的电镀膜的方法,而与稀土永磁体的表面材料和表面性质无关。 \n\n  发明内容 \n\n [0010] 鉴于上述情况,本发明人经过广泛研究完成了本发明。 因此,如权利要求1所述的根据本发明的在稀土永磁体的表面上形成电镀膜的方法包括:在稀土永磁体的表面上形成由树脂制成的非导电树脂涂层。 包含分散在其中的第一金属粉末,其中非导电涂层的体积电阻率为1 x 10 4 [0011] 根据权利要求2的形成方法,公开了根据权利要求1的方法,其中稀土永磁体是粘结磁体。 \n\n [0012] 根据权利要求3的形成方法,公开了根据权利要求1的方法,其中将第一金属的粉末以50重量%至99重量%的含量分散在树脂涂层中。 \n\n [0013] 根据权利要求4的形成方法,公开了根据权利要求1的方法,其中第一金属粉末的平均粒径在0.001μm至30μm的范围内。 \n\n [0014] 根据权利要求5的形成方法,公开了根据权利要求1所述的方法,其中,所述树脂涂层的膜厚在1μm至100μm的范围内。 \n\n [0015] 根据权利要求6的形成方法,公开了根据权利要求1的方法,其中第一金属是锌,第二金属是镍或锡。 \n\n [0016] 根据权利要求7的形成方法,公开了根据权利要求1的方法,其中第一金属是镍,第二金属是铜。 \n\n [0017] 根据权利要求8的形成方法,公开了根据权利要求1的方法,其中第二金属和第三金属相同。 \n\n [0018] 根据权利要求9的形成方法,公开了如权利要求8所述的方法,其中形成所述替代镀膜的步骤和形成所述电镀膜的步骤在同一镀浴中进行。 \n\n [0019] 根据权利要求10的形成方法,公开了如权利要求1所述的方法,其中,所述替换镀膜的膜厚在0.05μm至2μm的范围内。 \n\n [0020] 如权利要求11所述,根据本发明的在其表面上具有电镀膜的稀土永磁体的特征在于,其通过使用含有分散的树脂的稀土金属永磁体的表面上形成非导电涂层而制成。 其中第一金属粉末,其中非导电涂层的体积电阻率为1 x 10 4  实施发明的最佳方式 \n\n [0021] 根据本发明的用于在制品的表面上,特别是在稀土永磁体的表面上形成电镀膜的方法的特征在于,该方法包括:在制品的表面上形成非导电树脂。 由其中分散有第一金属粉末的树脂制成的涂层,其中非导电涂层的体积电阻率为1 x 10 4 [0022] 在根据本发明的在制品的表面上形成电镀膜的方法中,在制品的表面上形成由树脂制成的树脂涂层,该树脂涂层包含分散在其中的第一金属粉末,然后,第二 通过利用由存在于树脂涂层的表面或其附近的第一金属的粉末引发的置换电镀反应,在树脂涂层的整个表面上形成具有高粘合强度的金属取代的镀膜。 以这种方式,结果,将导电性赋予制品的整个表面,并且可以在取代的镀膜的表面上形成具有高粘附强度的第三金属的均匀且致密的电镀膜。 因此,可以在由任何类型的材料制成的制品的表面上形成具有高粘附强度的均匀且致密的电镀膜,例如塑料,木材,纸张,玻璃,陶瓷,橡胶和混凝土,而与表面无关 材料和制品的表面特性。 \n\n [0023] 下面逐步说明在本发明制品表面上形成电镀膜的方法。 \n\n 第1步: \n\n [0024] 首先,在物品的表面上形成由包含分散有第一金属的粉末的树脂制成的树脂涂层。 作为用作树脂涂层的基础的树脂,可以提及例如热固性树脂。 更具体地,可以提及例如酚醛树脂,环氧树脂,三聚氰胺树脂,丙烯酸树脂,聚酯树脂,聚氨酯树脂,聚酰亚胺树脂,苯乙烯-丙烯酸树脂及其混合树脂。 \n\n [0025] 对于要分散在树脂涂层中的第一金属粉末的种类没有特别限制,但是,为了在随后的步骤中引发置换镀覆反应,必须降低第一金属的电势。 比第二种金属要贵。 因此,应通过考虑第一金属与第二金属之间的电势差来适当地选择第一金属。 作为第一和第二金属的组合的具体示例,可以提及使用锌作为第一金属和镍或锡作为第二金属的组合,或者使用镍作为第一金属和铜作为第二金属的组合。 金属。 \n\n [0026] 由其中分散有第一金属的粉末的树脂制成的树脂涂层可以是导电涂层或非导电涂层,但是,对于形成在金属表面上的树脂涂层,优选非导电涂层。 由高腐蚀性材料(例如金属镁)制成的制品,或用于在高腐蚀性稀土永磁体的表面上形成的树脂涂层的制品,下文将对此进行说明。 即使在进行替代的电镀工艺或电镀工艺时应腐蚀树脂涂层的表面,或者即使在树脂涂层的表面因针孔和缺陷等缺陷而腐蚀时,也是如此。 通过在形成于树脂覆膜表面的置换镀膜上形成的电镀膜,可以防止从树脂覆膜内部向物品表面的腐蚀进一步发展。 \n\n [0027] 稀土永磁体,例如以Nd-Fe-B永磁体为代表的R-Fe-B永磁体,由于其高磁性能和允许使用低磁导率而被广泛应用于各个领域。 消耗资源丰富的材料。 \n\n [0028] 近来,在使用稀土永磁体的电子工业和电器工业中,使用了更紧凑的部件,并且正在进一步缩小尺寸。 因此,需要更紧凑的磁体或具有更复杂形状的磁体。 \n\n [0029] 从这一观点出发,主要基于磁性粉末和树脂粘合剂的粘结磁体易于定制成所需的形状,引起了人们的注意,并已在各种领域中得到实际应用。 \n\n [0030] 稀土永磁体包含R(稀土元素),它在空气中容易被氧化和腐蚀。 因此,在不进行表面处理的情况下使用时,由于空气中少量存在的酸,碱,水等的影响,腐蚀从表面进行,从而导致生锈。 这导致磁性能的劣化或波动。 此外,如果在其上产生生锈的磁体组装在诸如磁路的装置中,则担心会散布生锈以污染周边部件。 \n\n [0031] 为了克服上述问题,试图在磁体表面上形成电镀膜作为防腐蚀膜。 但是,在试图直接在粘结磁体的表面上形成电镀膜的情况下,均匀而致密的膜是不可行的,因为构成磁体表面的磁粉被树脂粘合剂绝缘,或者 介于这种磁性粉末之间的树脂部分具有低电导率。 结果,会产生针孔(未镀层的零件)以引起生锈。 \n\n [0032] 考虑到这种情况,作为在对粘结磁体的整个表面赋予导电性之后形成电镀膜的方法,例如,在日本专利No.2719658(日本专利公开No.276095)中提出了一种方法。  / 1992),一种方法包括用树脂和导电材料粉末的混合物涂覆粘结磁体的表面以形成导电树脂涂层,然后进行电镀。 然而,当从显微镜下观察时,该方法不能将足够高的导电性赋予树脂的整个表面。 因此,不可能从表面完全消除低电导率的部分。 结果,出现了不能形成均匀且致密的电镀膜的问题。 另一个问题是,由于形成在磁体表面上的树脂涂层是导电的,因此如果在进行电镀工艺等时该树脂涂层的表面应被腐蚀,则腐蚀会通过导电进行 涂层内部到磁体表面的一部分。 \n\n [0033] 上述专利还提出了一种方法,该方法包括在对粘结磁体的表面进行化学镀之后进行电镀工艺。 然而,根据该方法,当进行化学镀等时,用作处理溶液的溶剂的水或处理溶液中包含的各种成分残留在磁体的细孔等中,并且有时会导致 磁体的腐蚀,从而使得由此获得的膜与磁体表面的粘附性仍然不足。 \n\n [0034] 因此,可以理解,迄今提出的方法尚未获得令人满意的结果,并且迫切需要在粘结磁体的表面上形成电镀膜的新方法。 本发明使得能够在粘结磁体的表面上形成具有高粘附强度的均匀且致密的电镀膜,并且通过在粘结磁体的表面上提供树脂涂层作为非导电涂层,可以赋予优异的耐腐蚀性。 到粘结磁铁。 \n\n [0035] 可以通过例如用非导电树脂本身喷涂制品的表面来获得由其中分散有第一金属粉末的树脂制成的非导电涂层,其中第一金属粉末 将其分散,或者,如果需要,用通过用有机溶剂稀释树脂而制备的处理溶液,或者通过进行浸涂,将制品浸入处理溶液中,然后使其干燥来进行分散。 因为其中一些是可商购的,所以容易获得这样的包含分散在其中的金属粉末的非导电树脂。 此外,可以通过添加有机分散剂使分散在其中的第一金属粉末的导电树脂成为非导电处理溶液,从而使金属粉末均匀地分散和隔离。 在这种情况下,从与金属粉末的亲和性和成本的观点出发,优选使用的有机分散剂为例如阴离子分散剂(例如,脂肪族多元羧酸,聚醚聚酯羧酸盐,高分子聚酯酸多元胺盐,高分子量多元羧酸等)。 酸长链胺盐等),非离子分散剂(例如聚氧乙烯烷基醚,羧酸盐(如脱水山梨醇酯),磺酸盐,铵盐等),高分子分散剂(例如羧酸盐, 磺酸盐,水溶性环氧树脂的铵盐等,苯乙烯-丙烯酸共聚物,胶水等)。 此外,只要处理溶液能够形成非导电涂层,则溶液本身可以是导电的。 在制备处理溶液时,可以适当地使用分散机,例如球磨机,磨碎机和砂磨机。 \n\n [0036] 为了通过引发由树脂涂层中所含的金属粉末引起的置换电镀反应而在树脂涂层的整个表面上形成置换电镀膜,金属粉末应均匀且大量地存在于树脂涂层的表面或内部。 附近。 从这一观点出发,优选以这样的方式制备处理溶液,使得金属粉末应以50重量%以上的量分散在树脂涂层中。 树脂涂层中金属粉末分散体的量的上限没有限制,但是,通常,难以制备用于形成其中分散有浓度超过99重量%的金属粉末的树脂涂层的处理溶液。  (因为发生诸如金属粉末在处理溶液中的凝结和沉降,或者由于处理溶液的粘度增加而导致的处理困难等问题)。 因此,从生产的观点来看,树脂涂层中金属粉末分散量的上限为99重量%。 \n\n [0037] 为了制备其中均匀分散有金属粉末的处理溶液,金属粉末的平均粒径优选在0.001μm至30μm的范围内,更优选在0.01μm至12μm的范围内,并且进一步优选, 从2 µm到10 µm。 \n\n [0038] 如果由分散在其中的树脂制成的树脂涂层是不导电的,则形成的第一金属粉末是不导电的,则不导电涂层可防止腐蚀深入涂层内部,甚至到达制品的表面。 以防涂层表面被腐蚀。 因此,树脂涂层具有赋予制品耐腐蚀性的作用。 据信具有自我修复功能(即通过产生第一金属的腐蚀化合物(在第一金属为锌的情况下,该化合物例如为ZnCl 2·4Zn(OH)2和ZnO)), 或通过溶胀树脂从而增加树脂涂层的体积,使得涂层本身应具有掩埋涂层缺陷(例如针孔和缺陷)的功能,以及第一金属的牺牲防腐功能 达到上述效果。 为了进一步确保该效果,非导电涂层的体积电阻率优选设为1×10 4。 [0039] 为了充分发挥上述效果,通过在树脂涂层上形成平滑的表面,并在树脂涂层的表面上均匀且大量地提供金属粉末,从而在树脂涂层的整个表面上形成均匀的置换镀膜。 在其附近,树脂涂层优选以1μm至100μm范围内的膜厚度提供。 然而,在增加树脂涂层的膜厚度的情况下,可能存在树脂涂层不利地影响均匀电镀膜的形成的情况。 因此,在物品是稀土类永磁体的情况下,考虑到上述要点以及磁体的有效体积,树脂被膜的膜厚的上限优选为30μm。 \n\n [0040] 此外,为了提高制品表面与界面处的树脂涂层的粘附性,可以在成型过程之前进行已知的清洁方法,例如制品表面的脱脂或用于赋予锚定效果的滚筒抛光。 由其中分散有第一金属粉末的树脂制成的树脂涂层。 \n\n 第2步: \n\n [0041] 然后,通过将在步骤1中获得的树脂涂覆的物品浸入包含具有比第一金属的离子化电势高的离子化能力的第二金属的离子的溶液中,在树脂涂层的表面上形成第二金属取代的镀膜。 第二金属取代镀膜不仅具有赋予制品整个表面导电性的功能,而且还通过防止第一金属粉末颗粒掉落在树脂上而有助于提高制品的表面清洁度。 涂层。 该步骤可以按照用于形成置换镀膜的常规方法进行,但是,从确保足够高的导电性以在随后的步骤中形成第三金属的均匀且致密的电镀膜的观点出发,优选为 形成膜厚度为0.05μm或更厚的膜。 在形成取代的镀膜之前,为了在树脂涂层上获得光滑的表面并暴露均匀地分散在树脂涂层中的第一金属粉末的活性表面,可以对具有树脂的制品进行滚筒抛光。 在其表面上形成涂层。 取代镀覆膜的膜厚的上限没有特别限定,但从生产成本的观点出发,优选为2μm以下。 为了达到赋予制品装饰性,抗静电性的表面导电性等目的,在该步骤中获得的在其表面上形成有取代镀膜的产品足以在实用上令人满意地达到效果。 \n\n 第三步: \n\n [0042] 最后,在步骤2中获得的替代镀膜的表面上形成第三金属的电镀膜。该步骤可以根据用于形成电镀膜的已知方法来进行。 如上所述,必须通过考虑金属的电势差来选择第一和第二金属的组合。 然而,关于第三金属和第二金属之间的关系没有特别限制,并且可以用作第三金属的是通常用于电镀膜的那些金属,例如Ni,Cu,Sn,Co,Zn,Cr,Ag,Au, 铅和铂 因此,可以毫无问题地将相同的金属用作第二和第三金属。 \n\n [0043] 在第二金属和第三金属使用相同的金属的情况下,即,在电镀膜中使用构成取代的镀膜的金属的情况下,可以方便地将单个镀浴用于形成取代基的两个步骤2。 电镀膜和形成电镀膜的步骤3。 更具体地,例如,在将具有由分散有其内含树脂的树脂制成的树脂涂层的制品浸入其镀液中的情况下,通过进行置换镀覆来形成置换镀膜。 在不施加任何电压的情况下进行反应,然后,可以通过施加电压来形成电镀膜。 此外,即使在施加电压的情况下,将其表面分散有第一金属的粉末的树脂涂层由分散在其中的树脂涂层制成的制品浸入镀浴中,在该表面上形成替代的镀膜。 首先通过根据第一金属和第二金属之间的电势差发生的置换镀覆反应来进行树脂涂层的表面电阻化处理,因为在浸入的初始阶段树脂涂层的体积电阻率很高。 因此,结果,将导电性赋予制品的整个表面,以在取代的镀膜的表面上形成均匀且致密的电镀膜。 电镀膜的膜厚可以根据目的适当设定。 然而,从确保磁体有效体积的同时在制品是稀土永磁体的情况下赋予优异的耐腐蚀性的角度出发,优选以10μm至10μm的膜厚形成电镀膜。  30微米 \n\n [0044] 例如,在通过使用单个镀浴在稀土结合磁体的表面上形成Ni取代的镀膜和Ni电镀膜的情况下,取决于磁体的形状,可以使用各种类型的镀浴。 作为电镀浴,可以使用瓦特浴,氨基磺酸浴,伍德浴等公知的电镀浴。 为了在由分散有第一金属粉末的树脂制成的非导电涂层的表面上形成具有高粘附强度的Ni取代镀膜,例如,优选使用低镍高硫酸盐浴。 从而抑制第一金属与镍之间的过度转化效率(Ni替代镀膜的成膜速率)。 作为优选的低镍高硫酸盐浴,可以提及的电镀浴包含100 g / L至170 g / L五水合硫酸镍,160 g / L至270 g / L硫酸钠,8 g / L 至18 g / L的氯化铵和13 g / L至23 g / L的硼酸。 镀浴的pH值优选设定在4.0至8.0的范围内。 如果pH值低于4.0,则可能会对在酸性条件下不稳定的稀土粘结磁体产生负面影响。 另一方面,在pH超过8.0的情况下,担心这样生成的Ni取代镀覆膜的密合强度降低。 此外,通过将镀浴的pH设定在4.0至8.0的范围内,还可以达到有效抑制对在取代的Ni的表面上形成的Ni电镀膜的附着强度的负面影响的目的。 当形成粗糙的和粗糙的Ni取代的镀膜时,由于电势比Ni低的第一金属的突然洗脱而形成镀膜。 镀浴的浴温优选设定为30℃〜70℃的范围。 如果温度低于30°C,则镍取代的镀膜可能会导致表面粗糙和粗糙。 另一方面,如果温度超过70℃,则难以控制熔池的温度,从而难以形成均匀的Ni取代镀膜。 在使用上述镀浴形成Ni替代镀膜之后,在形成Ni电镀膜时,电流密度优选设定在0.2A / dm 2的范围内。 [0045] 在通过使用单个镀浴在稀土结合磁体的表面上形成Sn取代的镀膜和Sn电镀膜的情况下,例如,取决于磁体的形状,可以使用各种类型的镀浴。 镀浴的pH值优选设定在3.5至9.0的范围内。 如果pH值低于3.5,则可能会对在酸性条件下不稳定的稀土粘结磁体造成负面影响; 另一方面,在pH超过9.0的情况下,担心这样生成的Sn取代的镀膜的密合强度降低。 镀浴的浴温优选设定为15℃〜35℃的范围。 如果温度低于15°C,Sn取代的镀膜可能会导致表面粗糙和粗糙; 另一方面,如果温度超过35℃,则难以控制熔池的温度,从而难以形成均匀的Sn置换镀膜。 在使用上述镀浴形成Sn取代镀膜之后,在形成Sn电镀膜时,电流密度优选设定在0.1A / dm 2的范围内。 [0046] 此外,在通过使用单个镀浴在稀土粘结磁体的表面上形成Cu取代的镀膜和Cu电镀膜的情况下,例如,取决于磁体的形状,可以使用各种类型的镀浴。  。 镀浴的pH值优选设定在5.0至8.5的范围内。 如果pH值低于5.0,则可能会对在酸性条件下不稳定的稀土粘结磁体产生负面影响。 另一方面,在pH超过8.5的情况下,担心如此生成的Cu取代的镀膜的密合强度降低。 镀浴的浴温优选设定在25℃至70℃的范围内。 如果温度低于25°C,则铜取代的镀膜可能会导致表面粗糙。 另一方面,如果温度超过70℃,则难以控制浴的温度,难以形成均匀的Cu取代镀膜。 在通过使用上述镀浴形成Cu取代的镀膜之后形成Cu电镀膜时,电流密度优选设定在0.1A / dm 2的范围内。 [0047] 通过使用本发明的方法在环形粘结磁体的表面上形成电镀膜的情况下,可能会发生在磁体的内表面局部产生突起的情况。 在由分散在其中的第一金属粉末构成的,由树脂构成的非导电涂层的基底的树脂的硬度低的情况下,发现发生该现象。 因此,为了避免这种现象的发生,用作非导电涂层的基材的树脂优选具有高的硬度;优选地,具有高的硬度。 更具体地,优选使用固化时能够产生洛氏硬度为M80或更高的树脂,例如酚醛树脂(M110),环氧树脂(M80),丙烯酸树脂(M80),聚酯树脂(M80)和聚酰亚胺。 树脂(M128)。 其中,特别是在以聚酰亚胺树脂为代表的耐热性热固性树脂即所谓的超级工程塑料的情况下,这些树脂有效地起到防止发生作为非导电涂层的特性劣化的作用。 由于分散在树脂中的第一金属的粉末即使在树脂部分由于施加到磁体上的热量和负荷而发生软化的情况下也实现粘结效果,因此发生体积电阻率降低。 即,从赋予非导电涂层耐热性的观点出发,上述树脂是更优选的。 在混合使用多种树脂的情况下,优选将树脂组合以使得混合树脂固化时产生的洛氏硬度为M80或更高。 例如,环氧树脂和聚酰亚胺树脂的混合树脂在固化时的洛氏硬度为M80以上,不仅显示出优异的混溶性,还获得了金属粉的优异的分散性。 因此,从耐热性优异的观点出发,这种混合树脂也是优选的。 此外,为了避免局部产生突起,可以通过调节增白剂例如糖精类增白剂如添加物的添加量来缓和在非导电涂层的表面上形成为层压体的镀膜的应力。 芳族磺酰胺和芳族磺酰亚胺,以及丁炔二醇基增白剂,例如2-丁炔-1,4-二醇,被添加到电镀液中以形成电镀膜。 \n\n [0048] 此外,可以在上面形成的电镀膜上将其他电镀膜形成为层叠体。 通过采用这种构造,可以增强或补偿制品的性能,例如耐腐蚀性和机械强度,或者可以赋予制品额外的功能。 \n\n [0049] 在应用本发明的稀土永磁体中,粘结磁体可以是磁各向同性粘结磁体或磁各向异性粘结磁体,只要粘结磁体包含磁性粉末和树脂粘结剂作为主要成分即可。 除了通过树脂粘结剂粘结并成形的磁体之外,在上述粘结磁体中还包括通过使用金属粘结剂或无机粘结剂粘结并成形的磁体。 此外,粘合剂可以包含填料。 \n\n [0050] 组成和晶体结构不同的稀土粘结磁体是已知的,并且本发明可应用于所有这些。 \n\n [0051] 例如,可以提及在日本专利公开No.92515 / 1997中公开的各向异性的R-Fe-B基粘结磁体,具有软磁相(例如,α-Fe的Nd-Fe-B基纳米复合磁体)。 如日本专利公开号203714/1996中所公开的,以及硬磁相(Nd 2 Fe 14 B),或使用基于各向同性的Nd-Fe-B基磁粉的粘结磁体(例如MQP)。  -B(MQI Corp.生产的商品名)是通过广泛使用的常规熔融淬火工艺制备的。 \n\n [0052] 如日本专利公开号82041中所公开的,还包括由(Fe 1-x R x)1-y N y(0.07≤x≤0.3,0.001≤y≤0.2)表示的R-Fe-N基粘结磁体。  / 1993。 \n\n [0053] 构成稀土类粘结磁铁的磁粉可以通过以下方法获得:溶解和研磨工艺,该方法包括将稀土永磁合金熔融,对其进行铸造处理以制造铸锭,然后将其粉碎。 烧结产物粉碎过程,包括制造烧结磁体然后将所述烧结磁体粉碎。 还原和扩散过程,通过钙还原直接产生磁粉; 一种快速固化方法,包括通过熔融喷射铸造法生产稀土永磁合金的带状箔,并对带状箔进行粉碎和退火; 雾化工艺包括:熔化稀土永磁合金,通过雾化将合金粉末化,并对粉末状合金进行热处理; 以及机械合金化方法,其包括将原料金属粉末化,将粉末状金属细粉碎并对其进行热处理等。 \n\n [0054] 此外,构成R-Fe-N基粘结磁体的磁粉可以通过气体氮化工艺获得,该工艺包括将稀土永磁合金粉碎,在气态氮或气态氨中氮化该粉碎合金,然后将其细粉碎。 产生的合金。 \n\n [0055] 本发明的效果不取决于构成稀土永磁体的磁粉的属性,诸如组成,晶体结构,是否为各向异性等。 因此,无论稀土永磁体是粘结磁体还是烧结磁体,都可以获得期望的效果。 但是,上述效果对于粘结磁体特别有利。 \n\n [0056] 在将本发明应用于通过使用诸如厌氧性粘合剂的粘合剂层叠多个稀土永磁体而获得的层叠磁体的情况下,可以在层叠磁体的整个表面上形成电镀膜,包括被插入以粘合该粘合剂的粘合剂部分。 互相吸引。 因此,本发明提供了防止粘附力降低的效果,因为可以抑制在磁体和粘合剂之间的粘附力界面处侵入破坏粘附力的物质(例如水)的侵入。 \n\n [0057] 此外,有时在存在液体燃料的环境中使用环形稀土粘结磁体。 例如,它们有时被组装在安装在汽车等上的用于液体燃料(例如汽油,轻油,液化石油气等)的液体供给泵的马达中。 在这种情况下,通过首先在磁体表面上形成由分散有第一粉末粉末的树脂制成的非导电涂层,可以赋予环状稀土粘结磁体优异的耐液体燃料耐久性。 金属,然后通过将涂覆有该非导电涂层的磁体浸入包含第二金属离子的溶液中,该第二金属取代的镀膜浸没在该非金属涂层的表面上,该第二金属离子的电离势比该金属的离子电势高。 然后在取代的镀膜的表面上形成第三金属的电镀膜。 在这种情况下,作为优选使用的第三种金属是镍和锡,它们对液体燃料显示出高的耐腐蚀性。 \n\n  例子 \n\n [0058] 下面通过参考实验进一步详细描述本发明,其中,首先,作为本发明的一个实施方案,示出了在磁体表面上形成电镀膜,然后描述了另外的实例,其中, 其他物品则覆盖有电镀膜。 \n\n  实验A(在环形稀土粘结磁体的表面上形成电镀膜)  \n\n [0059] 通过快速凝固工艺制备由平均长径为150μm,含有12原子%(原子%)的Nd,77原子%的Fe,6原子%的B和5原子%的Co的颗粒组成的合金粉末, 并与以2wt%的浓度添加的环氧树脂捏合。 将所得混合物在686 N / mm 2的压力下压模。 [0060] EPO ROVAL(ROVAL Corporation的市售产品的商品名;固化后产生的洛氏硬度为M80,并且基于具有平均粒径为4 µm的锌粉的环氧树脂)被用作非导电树脂。 在其中分散锌粉,并用EPO稀释剂(ROVAL Corporation的市售产品的商品名)以1:0.5的重量比(EPO ROVAL:稀释剂)稀释。 通过均匀搅拌所得产物,获得其中分散有锌粉的非导电性树脂溶液。 通过操作配备有孔径为1.5mm的喷枪的空气喷涂设备在0.2MPa的吹塑压力下,将由此获得的溶液用于喷涂磁体测试件的整个表面。 因此,通过在常温(20°C)下干燥60分钟并在200°C下烘烤30分钟,可以得到非导电涂层(体积电阻率为3×10 5 在磁体试验片的表面上以15μm的膜厚(通过截面观察测定)形成含有96wt%的分散的锌粉的[0061] 将其上分散有由分散有锌粉的树脂制成的非导电涂层的二十五个磁体测试件与直径为4 mm的2.0 L氧化铝介质一起送入2.8 L体积的桶式熔池中,并进行桶形抛光 在1.0 mm振幅和60 Hz频率的条件下放置30分钟。 \n\n [0062] 将其上形成有非导电涂层的磁体测试件进行滚桶抛光后,将其用水超声清洗3分钟,然后在55℃下浸泡30分钟,而无需在装有240瓦特的瓦特浴中施加电压 g / L的五水合硫酸镍,45 g / L的五水合氯化镍和35 g / L的硼酸,通过使用碳酸镍将pH调节至4.2,从而在金属表面上形成Ni取代的镀膜。 非导电涂层。 在这种情况下,从瓦特浴中抽出25个磁体测试件中的5个,以研究由此形成的Ni取代的镀膜的膜厚度。 发现平均膜厚度为1μm(通过使用荧光X射线光谱法观察)。 \n\n [0063] 通过以1.5 A / dm 2的电流密度施加电压,对其余的磁体测试片(20个)进行Ni电镀处理。 [0064] 将这样获得的在最外表面上具有Ni电镀膜的磁体测试片用水超声清洗3分钟,并在100℃下干燥60分钟。 \n\n [0065] 用放大镜观察在20个磁铁试验片的最表面上形成的Ni电镀膜的外观(放大4倍),未发现有针孔,突起,异物附着等的不良品。  ,并且所有这些均被评价为具有均匀涂层的精细产品。 发现在非导电涂层的表面上形成的Ni镀膜的平均总厚度(n = 5)为25μm(通过使用荧光X射线光谱观察)。 因此,发现Ni电镀膜的平均(n = 5)膜厚为24μm。 \n\n [0066] 通过在其最外表面上形成有Ni电镀膜的15个磁体测试件上进行耐腐蚀性测试,方法是使它们在60℃和90%相对湿度的高温和高湿度条件下静置500小时。 结果,在任何磁体测试片上均未观察到异常外观,例如生锈,膜鼓胀,局部突起的产生等。 \n\n 比较例1: \n\n [0067] 通过混合并均匀地搅拌75重量%的由平均直径为4μm的颗粒,22重量%的二甲苯和3重量%的EPOMIK组成的锌粉,制备其中分散有锌粉的导电树脂溶液。  (三井化学公司的产品;单液体型环氧树脂,固化后洛氏硬度为M80)。 通过操作配备有孔径直径为1.5mm的喷枪的空气喷涂设备在0.2MPa的吹制压力下,将由此获得的溶液用于喷涂磁体测试件的整个表面。 因此,通过在常温(20℃)下干燥60分钟并在200℃下烘烤30分钟,得到导电涂层(体积电阻率为5×10 -1)。 在磁体试验片的表面上以15μm的膜厚(通过截面观察测定)形成含有96wt%的分散锌粉的[0068] 通过使用与实施例1相同的分散有锌粉的非导电性树脂溶液,并通过与实施例1相同的方法,得到具有由包含锌粉的树脂构成的非导电性被膜的磁铁试验片。 分散在其中并进行了滚筒抛光。 在其上形成有非导电涂层的滚筒抛光磁体测试件上用水超声清洗3分钟后,将磁体测试件浸入与示例1相同的瓦特浴中。示例2与示例1不同 电镀镍的过程是在1.5 A / dm 2的电流密度下进行120分钟 [0069] 将这样获得的在最外表面上具有Ni电镀膜的磁体测试片用水超声清洗3分钟,并在100℃下干燥60分钟。 \n\n [0070] 用放大镜观察在20个磁铁试验片的最表面上形成的Ni电镀膜的外观(放大4倍),未发现有针孔,突起,异物附着等的不良品。  ,并且所有这些均被评价为具有均匀涂层的精细产品。 发现在非导电涂层的表面上形成的Ni镀膜的平均总厚度(n = 5)为25μm(通过使用荧光X射线光谱法观察)。 尽管无法测量在非导电涂层表面上形成的Ni取代镀膜的膜厚,但是在最外表面上形成如此优质的Ni电镀膜这一事实表明,在下部导电膜上形成了Ni取代镀膜。 层,并且将导电性赋予整个表面。 \n\n [0071] 通过在其最外表面上形成有Ni电镀膜的15个磁体测试件上进行耐腐蚀性测试,方法是使它们在60℃和90%相对湿度的高温和高湿度条件下静置500小时。 结果,在任何磁体测试片上均未观察到异常外观,例如生锈,膜鼓胀,局部突起的产生等。 \n\n 比较例2: \n\n [0072] 使用ELESHUT No. 10 EMC(Ohashi Chemical Industries Ltd.的市售产品的商品名;固化后产生的洛氏硬度为M80,并且基于丙烯酸树脂和平均粒径为5 µm的镍粉)。 一种导电树脂,其中分散有镍粉,并用稀释剂稀释,用于合成树脂涂料,即No.5600(Ohashi Chemical Industries Ltd.的商品名称),重量比为1:0.5(  ELESHUT:更薄)。 通过均匀搅拌所得产物,获得其中分散有镍粉的导电树脂溶液。 通过操作配备有孔径直径为1.5mm的喷枪的空气喷涂设备在0.2MPa的吹制压力下,将由此获得的溶液用于喷涂磁体测试件的整个表面。 因此,通过在常温(20℃)下干燥60分钟并在200℃下烘烤30分钟,得到导电涂层(体积电阻率为2×10 -1)。 在磁体试验片的表面上,以15μm的膜厚(通过截面观察测定),形成含有66重量%的分散镍粉的[0073] 通过进行与实施例1相同的处理,得到具有由分散了镍粉的树脂构成的导电覆膜并进行了滚筒研磨的磁铁试验片。 在其上形成有导电涂层的滚筒抛光磁体测试件上用水超声清洗3分钟后,将磁体测试件浸入与实施例1相同的瓦特浴中。对镍进行120的电镀工艺 在1.5 A / dm 2的电流密度下的分钟 [0074] 将这样获得的在最外表面上具有Ni电镀膜的磁体测试片用水超声清洗3分钟,并在100℃下干燥60分钟。 \n\n [0075] 用放大镜观察在20个磁体试验片的最外表面上形成的Ni电镀膜的外观(放大4倍),发现针孔,突起和异物的粘附中的至少一种以及与 在所有的磁体测试件上形成不均匀的镀层,并且所有这些都被评估为次品。 发现在导电涂层的表面上形成的Ni镀膜的平均总厚度(n = 5)为25μm(通过使用荧光X射线光谱法观察)。 上述结果表明,在比较例2中,由于在Ni电镀膜的下层没有形成Ni取代的电镀膜,因此没有赋予足够的导电性以形成高质量的Ni电镀膜。 \n\n [0076] 通过在其最外表面上形成有Ni电镀膜的15个磁体测试件上进行耐腐蚀性测试,方法是使它们在60℃和90%相对湿度的高温和高湿度条件下静置500小时。 结果,在所有磁体测试片上均观察到异常外观,例如生锈,膜鼓胀,局部突起的产生等。 \n\n 范例3: \n\n [0077] 使用ELESHUT No. 10 EMC(Ohashi Chemical Industries Ltd.的市售产品的商品名;固化后产生的洛氏硬度为M80,并且基于丙烯酸树脂和平均粒径为5 µm的镍粉)。 包含分散有镍粉的导电树脂,以及与SUNCOAT 503(长岛特殊涂料有限公司的市售产品的商品名;固化后产生的M80洛氏硬度基于环氧树脂) 然后,以1:0.2:0.5的重量比(ELESHUT:SUNCOAT:稀释剂)用合成树脂涂料的稀释剂稀释,即No.5600(Ohashi Chemical Industries Ltd.的商品名称)。 得到的混合树脂在固化时的洛氏硬度为M80。 加入0.5wt%的DISPARLON#2150(由Kusumoto Chemicals,Ltd。生产的市售阴离子分散剂的商品名)并均匀地搅拌所得混合物,得到其中分散有镍粉的非导电树脂溶液。 通过操作配备有孔径直径为1.5mm的喷枪的空气喷涂设备在0.2MPa的吹制压力下,将由此获得的溶液用于喷涂磁体测试件的整个表面。 因此,通过在常温(20°C)下干燥60分钟并在200°C下烘烤30分钟,可以得到非导电涂层(体积电阻率为4×10 4 在磁体试验片的表面上以15μm的膜厚(通过截面观察来测量)形成包含55wt%的分散镍粉的[0078] 通过进行与实施例1相同的处理,得到具有由分散了镍粉的树脂构成的非导电性被覆层并进行了滚筒研磨的磁体试验片。 在其上形成有非导电涂层的机筒抛光磁体测试件上用水超声清洗3分钟后,将磁体测试件在40℃下浸泡30分钟,而无需在包含25 g铜的镀液中施加电压 / L硫酸铜五水合物,55 g / L乙二胺四乙酸二钠,28.2 g / L酒石酸钠二水合物,71 g / L硫酸钠和25.2 g / L亚硫酸钠,通过使用将pH调节至6.8 氢氧化钠,从而在非导电涂层的表面上形成铜取代的镀膜。 在这种情况下,从Cu镀浴中抽出25个磁体测试件中的5个,以研究由此形成的Cu取代的镀膜的膜厚。 发现平均膜厚度为2μm(通过使用荧光X射线光谱法观察)。 \n\n [0079] 通过以1.5 A / dm 2的电流密度施加电压,对其余的磁体测试件(20件)进行Cu电镀处理 [0080] 将这样获得的在最外表面具有Cu电镀膜的磁体测试片用水超声清洗3分钟,并在100℃下干燥60分钟。 \n\n [0081] 用放大镜观察在20个磁铁试验片的最表面上形成的Cu电镀膜的外观(放大4倍),未发现有针孔,突起,异物附着等的不良品。  ,并且所有这些均被评价为具有均匀涂层的精细产品。 发现在非导电涂层的表面上形成的Cu镀膜的平均总厚度(n = 5)为24μm(通过使用荧光X射线光谱观察)。 因此,发现Cu电镀膜的平均(n = 5)膜厚为22μm。 \n\n [0082] 通过在其中在最外表面上形成有Cu电镀膜的15个磁体测试件上进行耐腐蚀性测试,方法是使它们在60℃和90%相对湿度的高温和高湿度条件下静置500小时。 结果,尽管观察到轻微的褐色着色,但是在任何磁体测试片上均未观察到异常外观,例如生锈,膜鼓胀,局部突起的产生等。 \n\n 范例4: \n\n [0083] 通过进行与实施例1相同的工序,准备形成有非导电性被膜的滚筒抛光磁铁试验片,并用水进行超声波清洗3分钟后,将磁铁试验片在50℃下浸渍30分钟。 在含有133 g / L的五水合硫酸镍,213 g / L的硫酸钠,13 g / L的氯化铵和18 g / L的硼酸的低镍高硫酸盐浴中不施加电压的情况下,pH为 通过使用氢氧化钠将其调节至5.8,从而在非导电涂层的表面上形成膜厚度为1μm的Ni取代的镀膜(通过使用荧光X射线光谱法观察)。 然后,在1.5A / dm 2的电流密度下进行90分钟的Ni电镀工艺。 [0084] 将这样获得的在最外表面上具有Ni电镀膜的磁体测试片用水超声清洗3分钟,并在100℃下干燥60分钟。 用放大镜观察在磁铁试验片的最表面上形成的Ni镀膜的外观(放大4倍),未发现针孔,突起,异物附着等异常外观。  。 此外,通过在其最外表面上形成有Ni电镀膜的磁体测试件上进行耐腐蚀性测试,方法是使它们在60℃和90%相对湿度的高温高湿条件下静置500小时。  。 结果,在任何磁体测试片上均未观察到异常外观,例如生锈,膜鼓胀,局部突起的产生等。 此外,通过在其最外表面上形成有Ni电镀膜的磁体测试件上进行热冲击测试,方法是将它们在120℃的热板上静置3分钟。 结果,未观察到归因于Ni取代镀膜对非导电涂层的不良粘附的异常外观。 \n\n 范例5: \n\n [0085] EPO ROVAL(ROVAL Corporation的市售产品的商品名;固化后产生的洛氏硬度为M80,并且基于具有平均粒径为4 µm的锌粉的环氧树脂)被用作非导电性树脂。 将其分散在锌粉中,然后与BANI(丸善石油化学株式会社的市售产品的商品名;固化后产生洛氏硬度为M128的聚酰亚胺树脂)一起用EPO稀释剂(商品名 重量比为1:0.2:0.5(EPO ROVAL:BANI:稀释剂)的ROVAL Corporation的市售产品),以获得混合树脂,其固化后的洛氏硬度为M90。 通过均匀地搅拌所得混合物,获得其中分散有锌粉的非导电性树脂溶液。 通过操作配备有孔径直径为1.5mm的喷枪的空气喷涂设备在0.2MPa的吹制压力下,将由此获得的溶液用于喷涂磁体测试件的整个表面。 因此,通过在常温(20°C)下干燥60分钟并在200°C下烘烤30分钟,可以得到非导电涂层(体积电阻率为2×10 6 在磁体试验片的表面上,以10μm的膜厚(通过截面观察来测定)形成含有77重量%的分散的锌粉的[0086] 以与实施例1相同的方式,对其中具有分散有锌粉的树脂制成的具有非导电涂层的磁体测试片进行桶抛光。在桶抛光的磁体测试中,用水进行超声波清洗3分钟。 在其上形成有非导电涂层的部件上,在非导电涂层的表面上形成膜厚为1 µm的Ni替代镀膜,并在其表面上进一步形成膜厚为24 µm的Ni电镀膜。 通过与实施例1相同的工序(通过使用荧光X射线光谱法的观察),进行Ni置换镀膜。 \n\n [0087] 将这样获得的在最外表面上具有Ni电镀膜的磁体测试片用水超声清洗3分钟,并在100℃下干燥60分钟。 用放大镜观察在磁铁试验片的最表面上形成的Ni镀膜的外观(放大4倍),未发现针孔,突起,异物附着等异常外观。  。 此外,通过在其最外表面上形成有Ni电镀膜的磁体测试件上进行耐腐蚀性测试,方法是使它们在60℃和90%相对湿度的高温高湿条件下静置500小时。  。 结果,在任何磁体测试片上均未观察到异常外观,例如生锈,膜鼓胀,局部突起的产生等。 此外,通过在其最外表面上形成有Ni电镀膜的磁体测试件上进行热冲击测试,方法是将它们在120℃的热板上静置3分钟。 结果,未观察到归因于Ni取代的镀膜对非导电涂层的不良粘附的异常外观。 \n\n [0088] 此外,作为汽油耐久性试验,对如此获得的在其最外表面上形成有Ni电镀膜的磁体试验片(以下称为“样品”)进行如下试验。 将三个样品与12mL市售的常规汽油一起放入内部容积为50mL的耐压气密容器中,并牢固地关闭容器的盖子。 然后,将耐压气密容器密闭在水浴(恒温水浴)中,在80℃下保持2小时(容器的内部压力因汽油的蒸气压而上升至约300kPa), 从水浴中取出耐压的密闭容器,使其在大气中保持12小时。 该顺序操作进行一个循环,并准备进行该操作的5、15、30和50个循环的样品,以研究尺寸(外径,内径和高度),重量,环压强度(载荷)的变化 将其垂直于环的中心线施加,并测量破裂时的载荷。 结果,即使在重复操作50个循环之后,对于任何评价项目,在任何样品上都没有观察到特别的变化,显示出样品对汽油的优异耐久性。 尽管观察到磁性能略有下降,但这没有实际问题。 此外,在对磁体试验片本身进行汽油耐久性试验的情况下,由于汽油引起的树脂粘合剂的溶胀,因此在磁体试验片上观察到尺寸显着增加。 \n\n 范例6: \n\n [0089] 通过进行与实施例5相同的工序,制作形成有非导电性被膜的滚筒抛光磁铁试验片,并用水进行3分钟的超声波清洗后,进行与实施例4相同的工序,从而形成Ni。 在非导电涂层的表面上的膜厚为1μm的镍镀膜,以及在镍取代的镀膜的表面上膜厚为24μm的镍电镀膜(通过使用荧光X射线光谱法观察)。 \n\n [0090] 将这样获得的在最外表面上具有Ni电镀膜的磁体测试片用水超声清洗3分钟,并在100℃下干燥60分钟。 用放大镜观察在磁铁试验片的最表面上形成的Ni镀膜的外观(放大4倍),未发现针孔,突起,异物附着等异常外观。  。 此外,通过在其最外表面上形成有Ni电镀膜的磁体测试件上进行耐腐蚀性测试,方法是使它们在60℃和90%相对湿度的高温高湿条件下静置500小时。  。 结果,在任何磁体测试片上均未观察到异常外观,例如生锈,膜鼓胀,局部突起的产生等。 此外,通过在其最外表面上形成有Ni电镀膜的磁体测试件上进行热冲击测试,方法是将它们在120℃的热板上静置3分钟。 结果,未观察到归因于Ni取代的镀膜对非导电涂层的不良粘附的异常外观。 \n\n 实验B(在透明丙烯酸板的表面上形成电镀膜) \n\n [0091] 将五个分别长60mm,宽20mm,厚2mm的透明丙烯酸板与2L氧化铝介质(PSφ4,由PSton制造)一起放置在紧凑的振动桶(Tipton Corp.制造,VM-10)内。  Tipton Corp.),对透明丙烯酸片进行了30分钟的表面抛光。 然后,将经过表面抛光的透明丙烯酸片浸入丙酮中1分钟以进行表面脱脂,并使其自然干燥。 \n\n [0092] EPO ROVAL(ROVAL Corporation的市售产品的商品名;包含平均粒径为4μm的锌粉)用作其中分散有锌粉的非导电树脂,并用EPO稀释剂稀释(商品名 重量比为1:0.7(EPO ROVAL:稀释剂)。 通过均匀搅拌所得产物,获得其中分散有锌粉的非导电性树脂溶液。 通过操作装备有孔径为1.2mm的喷枪的空气喷涂设备在0.2MPa的吹塑压力下,将由此获得的溶液用于喷涂透明丙烯酸片的整个表面。 因此,通过在常温(20°C)下干燥60分钟并在200°C下烘烤30分钟,可以得到非导电涂层(体积电阻率为2×10 5 在透明丙烯酸板的表面上,以15μm的膜厚(通过截面观察测定)形成含有96重量%的分散的锌粉的[0093] 将步骤1中获得的其上形成有非导电涂层的五个透明丙烯酸片材与2L氧化铝介质(由Tipton Corp.制造)(PSφ4)一起放置在紧凑型振动筒(由Tipton Corp.制造的VM-10)内。  ),对非导电涂层进行30分钟的表面抛光。 \n\n [0094] 将其上形成有非导电涂层并进行了表面抛光的透明丙烯酸片在不施加电压的情况下于55°C浸入30分钟的瓦特浴中,该浴包含240 g / L的五水合硫酸镍,45 g / L的五水合氯化镍 通过使用碱性碳酸镍将pH调节为4.2,然后加入35g / L的硼酸,从而在非导电涂层的表面上形成Ni取代的镀膜。 在这种情况下,从瓦特浴中抽出五分之二的透明丙烯酸板,以研究由此形成的Ni取代的镀膜的膜厚。 结果,发现Ni取代的镀膜的平均膜厚为1μm(通过观察横截面测量)。 这样形成的Ni取代镀膜的表面外观为金属Ni,体积电阻率为5×10 -6。 [0095] 通过以1.5 A / dm 2的电流密度施加电压,对其余的透明丙烯酸板(3张)进行镍电镀工艺。 [0096] 将如此获得的在最外表面上具有Ni电镀膜的透明丙烯酸片材用水超声清洗3分钟,并在100℃下干燥60分钟。 \n\n [0097] 用放大镜观察在3个透明丙烯酸板的最表面上形成的Ni电镀膜的外观(放大4倍),未发现有针孔,突起,异物附着等的不良品。  ,并且所有这些均被评价为具有均匀涂层的精细产品。 发现在非导电涂层的表面上形成的Ni镀膜的平均总厚度(n = 3)为25μm(通过观察横截面而测得);该平均厚度为25μm。 因此,发现Ni电镀膜的平均(n = 3)膜厚为24μm。 \n\n 实验C(在木制吉祥物蝙蝠的表面上形成电镀膜) \n\n [0098] 与实验B的情况相似,在长度为240mm,直径为约10mm的木制吉祥物蝙蝠的表面上形成了具有高粘附强度的均匀且致密的Ni电镀膜。 \n\n 实验D(在波纹纤维板表面上形成电镀膜) \n\n [0099] 与实验B的情况相似(除了省去了使用紧凑型振动镜筒进行的两次表面抛光步骤),在长度为60 mm,厚度为20 mm的瓦楞纤维板的表面上形成了具有高粘附强度的均匀致密的镍电镀膜 宽2毫米厚。 \n\n 实验E(在透明玻璃板表面上形成电镀膜) \n\n [0100] 与实验B的情况类似,在长度为60mm,宽度为20mm,厚度为2mm的透明玻璃板的表面上形成具有高粘附强度的均匀且致密的Ni电镀膜。 \n\n 实验F(在铝片表面上形成电镀膜) \n\n [0101] 与实验B的情况类似,在长度为60mm,宽度为20mm,厚度为2mm的铝片的表面上形成具有高粘附强度的均匀且致密的Ni电镀膜。 \n\n 实验G(在镁合金片的表面上形成电镀膜) \n\n [0102] 与实验B的情况类似,在长度为60mm,宽度为20mm,厚度为2mm的镁合金板的表面上形成具有高粘附强度的均匀且致密的Ni电镀膜。 \n\n 工业适用性 \n\n [0103] 本发明提供了一种在制品的表面上形成具有高粘附强度的均匀且致密的电镀膜的方法,而与制品的表面材料和表面性质无关。');
INSERT INTO `os_patent_instruction_text` VALUES (12962, 22791, '【0001】明細書 物品表面への電気めつき被膜の形成方法 技術分野\n\n【0002】本発明は、 物品の表面材質や表面性状に依存することなくその表面に均一で緻 密な電気めつき被膜を優れた密着性でもって形成する方法に関する。 背景技術\n\n【0003】装飾性、 耐候性、 帯電防止などのための表面導電性、 電磁波遮断性、 抗菌性、 耐衝撃性などを物品に付与する目的で、 その表面に金属被膜を形成することが従 来から行われている。 金属被膜を形成するための方法は各種あるが、 中でも、 電 気めつき処理による電気めつき被膜形成方法は、 大量生産にも適していることか ら広く実用化されている。\n\n【0004】しかしながら、 物品表面に電気めつき被膜を形成するためには、 物品表面に導 電性が必要となる。 従って、 プラスチック、 木材、 紙、 ガラス、 セラミックス、 ゴム、 コンクリートなどの非導電性材質からなる物品表面に直接的に電気めつき 被膜を形成することはできない。 また、 マグネシウムやアルミニウムやチタンな どの金属材質からなる物品 （携帯電話やノート型パーソナルコンピュータの筐体 など） 表面に金属被膜を形成したい塲合があるが、 マグネシウムは金属の中でも 特に卑な金属である。 従って、 その表面に電気めつき被膜を形成しょうとしても、 めつき浴に浸潰した途端に急激な置換めつき反応が起こってしまうので、 良質の 電気めつき被膜を形成することは困難である。 アルミニウムやチタンは非常に酸 化しやすい金属であり、 通常、 その表面は非常に緻密な金属酸化膜で覆われてい る。 従って、 これらの金属はイオン化傾向が低いにもかかわらず、 その表面の電 位が高くなつているので、 電気めつき処理を行うことは困難である。 表面に存在 する金属酸化膜を除去すれば、 電気めつき被膜を形成することは可能となるが、 特殊なエッチング技術が必要となる上に、 金属酸化膜を除去した後は、 再び金属 酸化膜が生成するまでに電気めつき処理を行わなくてはならないといった時間的\n\n制約が発生するので、 実用上問題があるといわざるを得ない。 水酸化ナトリウム と水酸化亜鉛を含有する溶液に浸漬することで、 強アルカリ環境下にてエツチン グを行うと同時に亜鉛の置換めつき被膜を形成する所謂ジンゲート処理をした後、 無電解めつき被膜を形成する工程を介して電気めつき処理を行う方法もあるが全 体工程が複雑である。\n\n【0005】また、 木製バットゃレンガゃダイカスト品などのように表面に空孔部ゃ微細溝 や凹凸を有する物品表面に均一な電気めつき被膜を形成しょうとした場合には、 物品表面に対して導電性を如何に付与するかという点とともに物品表面の平滑性 を如何に確保するかという点を解決しなければならない。\n\n【0006】また、 マグネシウムなどの金属のように腐食性の高い材質からなる物品は、 電 気めつき処理を行った際に腐食することがあるので、 このような物品に対して電 気めつき被膜を形成することには困難が伴う。\n\n【0007】公知の技術を利用して上記の問題を解決しょうとした場合、 特開昭 6 1 - 2 1 0 1 8 3号公報に記載された、 物品表面に金属粉末を分散させた樹脂からなる樹 脂被膜を形成した後、 この樹脂被膜表面に無電解めつき被膜を形成する方法を採 用し、 こうして形成される無電解めつき被膜表面に電気めつき被膜を形成する方 法が考えられる。 しかしながら、 無電解めつき被膜は、 めっき液中の金属イオン を還元剤の作用により還元して被めつき物表面に金属析出させることで形成され る被膜であるので、 被めつき物との密着性に劣るとともに成膜効率の点において も劣る。 パラジウム触媒や白金触媒を使用して成膜効率を向上させる方法もある が、 この方法ではコストアップが避けられない。 また、 無電解めつき被膜に含ま れる還元剤由来の不純物がその表面への電気めつき被膜の形成に悪影響を及ぼす ことが否定できない。\n\n【0008】そこで本発明は、 物品の表面材質や表面性状に依存することなくその表面に均 一で緻密な電気めつき被膜を優れた密着性でもつて形成する方法を提供すること を目的とする。 発明の開示\n\n【0009】上記の点に鑑みて本発明者らが種々の検討を行ったことにより完成された本発\n\n明の物品表面への電気めつき被膜の形成方法は、 請求の範囲第 1項記載の通り、 物品表面に第 1金属の粉末を分散させた棚旨からなる樹脂被膜を形成した後、 こ の樹脂被膜形成物品を第 1金属より貴な電位を有する第 2金属のイオンを含む溶 液に浸漬することで樹脂被膜表面に第 2金属の置換めつき被膜を形成し、 さらに 置換めつき被膜表面に第 3金属の電気めつき被膜を形成することを特徴とする。 また、 請求の範囲第 2項記載の形成方法は、 請求の範囲第 1項記載の形成方法 において、 樹脂被膜が非導電性被膜であることを特徴とする。\n\n【0010】また、 請求の範囲第 3項記載の形成方法は、 請求の範囲第 2項記載の形成方法 において、 物品が希土類系永久磁石であることを特徴とする。\n\n【0011】また、 請求の範囲第 4項記載の形成方法は、 請求の範囲第 3項記載の形成方法 において、 希土類系永久磁石がボンド磁石であることを特徴とする。\n\n【0012】また、 請求の範囲第 5項記載の形成方法は、 請求の範囲第 2項記載の形成方法 において、 非導電性被膜の体積抵抗率が 1 X 1 04Ω · c m以上であることを特 徴とする。\n\n【0013】また、 請求の範囲第 6項記載の形成方法は、 請求の範囲第 1項記載の形成方法 において、 樹脂被膜中における第 1金属の粉末の分散量が 5 0重量％〜9 9重 量％であることを特徴とする。\n\n【0014】また、 請求の範囲第 7項記載の形成方法は、 請求の範囲第 1項記載の形成方法 において、 第 1金属の粉末の平均粒径が 0. 0 0 1 m〜3 0 mであることを 特徴とする。\n\n【0015】また、 請求の範囲第 8項記載の形成方法は、 請求の範囲第 1項記載の形成方法 において、 樹脂被膜の膜厚が 1 / m〜 1 0 0 mであることを特徴とする。 また、 請求の範囲第 9項記載の形成方法は、 請求の範囲第 1項記載の形成方法 において、 第 1金属が亜鉛で第 2金属がニッケルまたはスズであることを特徴と する。\n\n【0016】また、 請求の範囲第 1 0項記載の形成方法は、 請求の範囲第 1項記載の形成方 法において、 第 1金属がニッゲルで第 2金属が銅であることを特徴とする。 また、 請求の範囲第 1 1項記載の形成方法は、 請求の範囲第 1項記載の形成方 法において、 第 2金属と第 3金属が同じ金属であることを特徵とする。\n\nまた、 請求の範囲第 1 2項記載の形成方法は、 請求の範囲第 1 1項記載の形成 方法において、 置換めつき被膜を形成する工程と電気めつき被膜を形成する工程 を一つのめっき浴において行うことを特徴とする。\n\n【0017】また、 請求の範囲第 1 3項記載の形成方法は、 請求の範囲第 1項記載の形成方 法において、 置換めつき被膜の膜厚が 0 . 0 5 m〜2 // mであることを特徴と する。\n\n【0018】また、 本発明の物品は、 請求の範囲第 1 4項記載の通り、 請求の範囲第 1項記 載の形成方法により表面に電気めつき被膜が形成されていることを特徴とする。 また、 本発明の物品表面への置換めつき被膜の形成方法は、 請求の範囲第 1 5 項記載の通り、 物品表面に第 1金属の粉末を分散させた樹脂からなるST脂被膜を 形成した後、 この樹脂被膜形成物品を第 1金属より貴な電位を有する第 2金属の ィオンを含む溶液に浸漬することで樹脂被膜表面に第 2金属の置換めつき被膜を 形成することを特徴とする。\n\n【0019】また、 本発明の物品は、 請求の範囲第 1 6項記載の通り、 請求の範囲第 1 5項 記載の形成方法により表面に置換めつき被膜が形成されていることを特徴とする。 また、 本発明の電気めつき被膜を表面に有する希土類系永久磁石は、 請求の範 囲第 1 7項記載の通り、 希土類系永久磁石表面に第 1金属の粉末を分散させた樹 脂からなる非導電性被膜を形成した後、 非導電性被膜形成磁石を第 1金属より貴 な第 2金属のイオンを含む溶液に浸漬することで非導電性被膜表面に第 2金属の 置換めつき被膜を形成し、 さらに置換めつき被膜表面に第 3金属の電気めつき被 膜を形成することで製造されたことを特徴とする。\n\n【0020】また、 本発明の電気めつき被膜を表面に有する希土類系永久磁石は、 請求の範 囲第 1 8項記載の通り、 希土類系永久磁石表面に第 1金属の粉末を分散させた榭 脂からなる非導電性被膜が形成され、 さらにその表面に第 1金属より貴な第 2金 属の置換めつき被膜を介して第 3金属の電気めつき被膜が形成されていることを 特徴とする。\n\n【0021】また、 本発明の置換めつき被膜を表面に有する希土類系永久磁石は、 請求の範 囲第 1 9項記載の通り、 希土類系永久磁石表面に第 1金属の粉末を分散させた樹 脂からなる非導電性被膜が形成され、 さらにその表面に第 1金属より貴な第 2金\n\n属の置換めつき被膜が形成されていることを特徴とする。\n\n【0022】また、 本発明の非導電性被膜を表面に有する希土類系永久磁石は、 請求の範囲 第 2 0項記載の通り、 希土類系永久磁石表面に第 1金属の粉末を分散させた樹脂 からなる非導電性被膜が形成されていることを特徴とする。 発明を実施するための最良の形態\n\n【0023】本発明の物品表面への電気めつき被膜の形成方法は、 物品表面に第 1金属の粉 末を分散させた樹脂からなる樹脂被膜を形成した後、 この樹脂被膜形成物品を第 1金属より貴な電位を有する第 2金属のイオンを含む溶液に浸漬することで樹脂 被膜表面に第 2金属の置換めつき被膜を形成し、 さらに置換めつき被膜表面に第 3金属の電気めつき被膜を形成することを特徴とするものである。\n\n【0024】本発明の物品表面への電気めつき被膜の形成方法においては、 物品表面に第 1 金属の粉末を分散させた棚 からなる樹脂被膜を形成し、 次に、 この樹脂被膜表 面やその近傍に存在する第 1金属の粉末を起点とする置換めつき反応を利用する ことで密着性に優れた第 2金属の置換めつき被膜を樹脂被膜表面全体に形成する。 これにより結果として物品表面全体に導電性が付与されることになるので、 置換 めっき被膜表面に均一で緻密な第 3金属の電気めつき被膜を優れた密着性でもつ て形成することが可能となる。 従って、 物品の表面材質や表面性状に依存するこ となく、 プラスチック、 木材、 紙、 ガラス、 セラミックス、 ゴム、 コンクリート、 金属などのあらゆる材質からなる物品表面に均一で緻密な電気めつき被膜を優れ た密着性でもって形成することができる。\n\n【0025】以下、 本発明の物品表面への電気めつき被膜の形成方法について、 順を追って 説明する。\n\n【0026】工程 1 ：\n\n【0027】まず、 物品表面に第 1金属の粉末を分散させた樹脂からなる樹脂被膜を形成す る。 樹脂被膜の主体となる樹脂としては、 例えば、 熱硬化性樹脂を使用すること ができる。 具体的には、 フエノール樹脂、 エポキシ樹脂、 メラミン樹脂、 ァクリ ル樹脂、 ポリエステル樹脂、 ウレタン樹脂、 ポリイミド樹脂、 スチレンアクリル 樹脂およびこれらの混合樹脂などが挙げられる。\n\n樹脂被膜中に分散される第 1金属の粉末の種類に特段の制限はないが、 後のェ 程において置換めつき反応を起すためには、 第 1金属は第 2金属よりも卑な電位 を有することが必須となる。 従って、 第 1金属は第 2金属との電位差を考慮して 適宜選択される。 第 1金属と第 2金属の組合せの具体例としては、 第 1金属が亜 鉛で第 2金属がニッケルやスズの組合せや、 第 1金属がニッケルで第 2金属が銅 の組合せなどが挙げられる。\n\n【0028】第 1金属の粉末を分散させた樹脂からなる樹脂被膜は、 導電性被膜であっても 非導電性被膜であってもよいが、 マグネシウムなどの金属のように腐食性の高い 材質からなる物品表面に形成する樹脂被膜や、 後に述べるような腐食性の高い希 土類系永久磁石の表面に形成する樹脂被膜は非導電性被膜であることが望ましい。 置換めつき処理や電気めつき処理を行った際に樹脂被膜表面が腐食したとしても、 また、 樹脂被膜表面に置換めつき被膜を介して形成された電気めつき被膜にピン ホールや傷などの欠陥が生じ、 当該欠陥を通じるなどして樹脂被膜表面が腐食し たとしても、 樹脂被膜内部を通して腐食が物品表面まで進行してしまうといった ことを防止することができるからである。\n\n【0029】ところで、 N d— F e— B系永久磁石に代表される R _ F e _ B系永久磁石な どの希土類系永久磁石は、 資源的に豊富で安価な材料が用いられ、 かつ、 高い磁 気特性を有していることから、 今日様々な分野で使用されている。\n\n【0030】近年、 希土類系永久磁石が使用される電子業界や家電業界では、 部品の小型化 やダウンサイジング化が進み、 それに対応して、 磁石自体も小型化や複雑形状化 の必要性に迫られている。\n\n【0031】この観点から、 磁性粉と樹脂バインダーを主成分とした、 形状成形が容易なポ ンド磁石が注目され、 すでに各種方面で実用化されている。\n\n【0032】希土類系永久磁石は、 大気中で酸化腐食されやすい Rを含む。 それ故、 表面処 理を行わずに使用した場合には、 わずかな酸やアルカリや水分などの影響により 表面から腐食が進行して鲭が発生し、 それに伴って、 磁気特性の劣化やばらつき を招くことになる。 さらに、 錡が発生した磁石を磁気回路などの装置に組み込ん だ場合、 鑌が飛散して周辺部品を汚染する恐れがある。\n\n【0033】この問題点を解消すべく、 磁石表面に耐食性被膜としての電気めつき被膜を形\n\n成する試みがなされている。 しかし、 ポンド磁石表面に直接的に電気めつき被膜 を形成しょうとした場合、 磁石表面を構成する樹脂バインダーで絶縁化されてい る磁性粉やこれらの磁性粉間の樹脂部分は導電性が低いために均一で緻密な被膜 を形成することができず、 その結果、 ピンホール （無めつき部分） が生じて発錡 を招く場合がある。\n\n【0034】以上の点に鑑み、 ボンド磁石表面全体に導電性を付与した後に電気めつき被膜 を形成する方法として、 例えば、 特許第 2 7 1 9 6 5 8号 （特開平 4一 2 7 6 0 9 5号） 公報には、 ボンド磁石表面に樹脂と導電性材料粉末との混合物を塗布し て導電性樹脂被膜を形成した後、 電気めつきを施す方法が提案されている。 しか し、 この方法では、 ミクロ的に見ると樹脂表面全体に必ずしも十分な導電性が付 与されているわけではないので、 表面に導電性が低い部分が存在することは否め ず、 その結果、 均一で緻密な電気めつき被膜を形成することができないという問 題がある。 また、 磁石表面に形成される樹脂被膜が導電性であるので、 電気めつ きを行った際などに樹脂被膜表面が腐食すると、 被膜内部における導電部を通じ て腐食が磁石表面まで進行してしまうといった問題もある。\n\n【0035】また、 上記特許公報には、 ボンド磁石表面に無電解めつきを施した後、 電気め つきを施す方法も提案されているが、 この方法では、 無電解めつきを行った際な どに処理液の溶媒となる水や処理液に含まれる各種の成分が磁石の空孔部などに 残存してしまい、 磁石の腐食を招く場合があるほか、 形成される被膜自体の磁石 表面に対する密着性も優れたものとは言い難い。\n\n【0036】従って、 上記のようなこれまでに提案されている方法では、 満足できるに足る 成果を得ることができないことから、 ボンド磁石表面に電気めつき被膜を形成す るための新たな方法が待ち望まれていた。 本発明によれば、 ボンド磁石表面にも 均一で緻密な電気めつき被膜を優れた密着性でもつて形成することができ、 ボン ド磁石表面に形成する樹脂被膜を非導電性被膜とすることで、 ボンド磁石に優れ た耐食性を付与することができる。\n\n【0037】第 1金属の粉末を分散させた樹脂からなる非導電性被膜は、 例えば、 第 1金属 の粉末を分散させた非導電性の樹脂自体を、 また、 必要であればこのような樹脂 を有機溶剤を用いて希釈して調製した溶液を処理液として物品表面にスプレー塗\n\n装したり、 処理液中に物品を浸潰して浸漬塗装を行ったりした後、 これを乾燥さ せることにより形成する。 金属粉末を分散させた非導電性の樹脂は市販されてい るものもあり、 簡便に入手することができる。 第 1金属の粉末を分散させた樹脂 が導電性であつても、 有機分散媒を添加して個々の金属粉末を均一に分散させて 隔離することで処理液を非導電性のものとすることもできる。 この場合、 有機分 散媒としては、 ァニオン性分散媒 （脂肪族系多価カルボン酸、 ポリエーテルポリ エステルカルボン酸塩、 高分子ポリエステル酸ポリアミン塩、 高分子量ポリカル ボン酸長鎖ァミン塩など） 、 非イオン性分散媒 （ポリオキシエチレンアルキルェ 一テルゃソルビタンエステルなどのカルボン酸塩ゃスルフォン酸塩やアンモニゥ ム塩など） 、 高分子分散媒 （水溶性エポキシのカルボン酸塩ゃスルフォン酸塩や アンモニゥム塩など、 スチレン—アクリル酸共重合物、 ニカヮなど） などが金属 粉末との親和性やコストの点から好適に使用される。 また、 非導電性被膜を形成 することができる処理液であれば、 それ自体が導電性であってもよい。 処理液の 調製に際しては、 ポールミルやアトライターやサンドミルなどの分散機を適宜使 用することができる。\n\n【0038】樹脂被膜中の金属粉末が置換めつき反応の起点となり、 樹脂被膜表面全体に置 換めっき被膜が形成されるためには、 樹脂被膜表面やその近傍に金属粉末が均一 にしかもリッチに存在することが有利である。 従って、 この観点からは、 樹脂被 膜中における金属粉末の分散量が 5 0重量％以上となるように処理液を調製する ことが望ましい。 樹脂被膜中における金属粉末の分散量の上限は限定されるもの ではないが、 通常、 金属粉末の分散量が 9 9重量％を越える樹脂被膜を形成する ための処理液を調製することは困難である （処理液中において金属粉末が凝集沈 降するといつた問題や処理液の粘性が上昇して取扱性に劣るといった問題が生じ るため） 。 従って、 製造上においては樹脂被膜中における金属粉末の分散量の上 限は 9 9重量％である。\n\n【0039】なお、 金属粉末が均一分散した処理液を調製するためには、 金属粉末の平均粒 径は 0 . 0 0 1 ！〜 3 0 mであることが望ましく、 0 . 0 l m〜1 2 m であることがより望ましく、 2 μ ΐΉ〜1 0 mであることがさらに望ましい。 以上のようにして形成される第 1金属の粉末を分散させた樹脂からなる樹脂被\n\n膜を非導電性被膜とした場合、 被膜が非導電性であるが故、 たとえ被膜表面が腐 食したとしても、 被膜内部を通じて腐食が物品表面まで進行してしまうことを防 止するので、 それ自体が物品に対して耐食性を付与するという効果を有する。 こ の効果には、 被膜が有する自己修復作用 （第 1金属の腐食化合物 （第 1金属が亜 鉛の場合には Z n C 12· 4 Z n (OH)2や Z n Oなどが該当する） の生成や 樹脂の膨潤による体積増加により被膜にピンホールや傷などの欠陥が存在しても 当該欠陥を埋没させてしまうという作用） や第 1金属が有する犠牲防食作用など も寄与しているものと考えられる。 この効果をより確実なものとするためには、 非導電性被膜の体積抵抗率を 1 X 1 04Ω · c m以上とすることが望ましい。 前 述の有機分散媒を処理液中に添加して処理液中における金属粉末の凝集沈降を抑 制し、 金属粉末の分散性を高めることで体積抵抗率を高めるようにしてもよい。 物品が希土類系永久磁石である場合、 表面に高い体積抵抗率の非導電性被膜を有 する磁石は、 モー夕に組み込んで使用した場合、 磁石内部に発生する渦電流が少 ない。 従って、 渦電流に起因する発熱による熱減磁も少ないので、 モー夕効率の 低減を抑制することができる点において価値がある。 こうした磁石を複数個積層 してモータに組み込んだ場合、 その価値は特に高いものとなる。\n\n【0040】なお、 上記の効果を十分に発揮させるとともに、 樹脂被膜表面を平滑なものと し、 樹脂被膜表面やその近傍に金属粉末を均一にしかもリッチに存在させ、 樹脂 被膜表面全体に均一な置換めつき被膜が形成されるようにするためには、 樹脂被 膜の膜厚は 1 m〜l 0 0 mであることが望ましい。 しかしながら、 樹脂被膜 の膜厚が増大すると、 ともすれば、 均一な電気めつき被膜の形成に悪影響を及ぼ すことがある。 従って、 この点や物品が希土類系永久磁石である場合における磁 石の有効体積などを考慮すると、 樹脂被膜の膜厚の上限は 3 0 mであることが より望ましい。\n\n【0041】なお、 第 1金属の粉末を分散させた樹脂からなる樹脂被膜を形成するためのェ 程を行う前に、 物品表面と樹脂被膜との界面の密着性を向上させるため、 物品表 面の脱脂などによる自体公知の清浄化やバレル研磨による投錨効果の付与などを 行ってもよい。\n\n【0042】工程 2 ：\n\n次に、 工程 1で樹脂被膜がその表面に形成された物品を第 1金属より貴な電位 を有する第 2金属のイオンを含む溶液に浸漬することで樹脂被膜表面に第 2金属 の置換めつき被膜を形成する。 第 2金属の置換めつき被膜は、 物品表面全体に導 電性を付与する機能を有するとともに、 第 1金属の粉末が樹脂被膜から脱粒する ことを防止し、 物品表面清浄性の向上に寄与する。 この工程は置換めつき被膜を 形成するための常法に従って行えばよいが、 後の工程において均一で緻密な第 3 金属の電気めつき被膜を形成するために十分な導電性を確保するという観点から は、 0 . 0 5 m以上の膜厚を有する被膜を形成することが望ましい。 置換めつ き被膜を形成する前に、 樹脂被膜表面を平滑なものとするとともに樹脂被膜中に 均一分散された第 1金属の粉末の活性面を露出させる目的で樹脂被膜がその表面 に形成された物品に対してバレル研磨を施してもよい。 なお、 置換めつき被膜の 膜厚の上限は特段限定されるものではないが、 製造コス卜の点に鑑みれば 2 u rn 以下とすることが望ましい。 なお、 装飾性や帯電防止などのための表面導電性な どを物品に付与する目的においては、 表面に置換めつき被膜が形成されたこの段 階のものであっても実用上満足できるに足る効果を得ることができる。\n\n【0043】工程 3 ：\n\n【0044】最後に、 工程 2で形成された置換めつき被膜表面に第 3金属の電気めつき被膜 を形成する。 この工程は電気めつき被膜を形成するための常法に従って行えばよ い。 前述のように、 第 1金属と第 2金属との組合せについては両者の電位差を考 慮しなければならないが、 第 3金属については第 2金属との関係において特段考. 慮しなければならない事情はなく、 例えば、 N i、 C u、 S n、 C o , Z n、 C r、 A g、 A u、 P b、 P tなどのような、 通常、 電気めつき被膜として形成さ れる金属が第 3金属として適用される。 従って、 第 2金属と第 3金属が同じ金属 であっても何ら問題はない。 \' 第 2金属と第 3金属を同じ金属とする場合、 即ち、 置換めつき被膜を構成する 金属と電気めつき被膜を構成する金属を同じ金属とする場合には、 置換めつき被 膜を形成する工程 2と電気めつき被膜を形成する工程 3を一つのめっき浴におい て行うことが好都合である。 即ち、 例えば、 その表面に第 1金属の粉末を分散さ せた樹脂からなる樹脂被膜が形成された物品をめつき浴に浸潰した当初、 電圧を\n\nかけないことで置換めつき反応を進行させて置換めつき被膜を形成した後、 電圧 をかけることで電気めつき被膜を形成することができる。 また、 その表面に第 1 金属の粉末を分散させた樹脂からなる樹脂被膜が形成された物品をめつき浴に浸 漬した当初から電圧をかけた場合でも、 浸漬初期の段階に.おいては樹脂被膜の体 積抵抗率が高いので、 樹脂被膜表面ではまず第 1金属と第 2金属の電位差による 置換めつき反応が起こって置換めつき被膜が形成される。 これにより結果として 物品表面全体に導電性が付与されて、 置換めつき被膜表面に均一で緻密な電気め つき被膜が形成される。 電気めつき被膜の膜厚は、 その目的に応じて適宜設定す ればよいが、 物品が希土類系永久磁石の場合、 磁石の有効体積をできる限り確保 するという観点と優れた耐食性を発揮させるという観点からは、 電気めつき被膜 の膜厚は 1 0 m〜3 0 mが望ましい。\n\n【0045】例えば、 希土類系ボンド磁石表面に置換 N iめっき被膜と電気 N iめっき被膜 を一つのめっき浴において形成する場合においては、 めっき浴槽は磁石の形状に 応じて種々の浴槽を使用することができる。 めっき浴としては、 ワット浴、 スル ファミン酸浴、 ウッド浴などの公知のめっき浴を用いればよい。 第 1金属の粉末 を分散させた樹脂からなる非導電性被膜表面に密着性に優れた置換 N iめっき被 膜を形成するためには、 例えば、 低ニッケル高硫酸塩浴などを使用し、 第 1金属 とニッケルとの間の過度な置換効率 （置換 N iめっき被膜の成膜速度） を抑制す ることが望ましい。 好適な低ニッケル高硫酸塩浴としては、 硫酸ニッケル · 5水 和物 1 0 0 g/L〜l 7 0 g ZL、 硫酸ナトリウム 1 6 0 g ZL〜2 7 0 g/L、 塩化アンモニゥム 8 g ZL〜l 8 g /L、 ホウ酸 1 3 g ZL S 3 g /Lからな るめつき浴が挙げられる。 めっき浴の p Hは 4. 0〜8 . 0とすることが望まし い。 4. 0未満であると酸性条件に不安定な希土類系ポンド磁石に対して悪影響 を及ぼす恐れがある一方、 8 . 0を超えると形成された置換 N iめっき被膜の密 着性が劣る恐れがあるからである。 また、 めっき浴の p Hを 4. 0〜8 . 0とす ることには、 N iよりも卑な電位を有する第 1金属が急激に溶出して粗雑な置換 N iめっき被膜が形成され、 その表面に形成される電気 N iめっき被膜との密着 性に悪影響を及ぼすといったことを効果的に抑制する目的もある。 めっき浴の浴 温は 3 0 ：〜 7 0 とすることが望ましい。 3 0 °C未満であると形成された置換\n\nN iめっき被膜の表面が粗雑なものになる恐れがある一方、 70°Cを超えると浴 温管理が難しく、 均一な置換 N iめっき被膜が形成されない恐れがあるからであ る。 このようなめっき浴を用いて置換 N iめっき被膜を形成した後に電気 N iめ つき被膜を形成するに際しては、 電流密度は 0. 2 A/dm2〜20 AZdm2とすることが望ましい。 0. 2 AZdm2未満であると成膜速度が遅くて生産性 に劣る恐れがある一方、 2 OA/dm2を超えると形成された電気 N iめっき被 膜の表面が粗雑なものとなり、 ピンホールが多数発生する恐れがあるからである。 なお、 陽極には電解 N i板を用いるが、 N iの溶出を安定させるために、 電解 N i板として Sを含有したニッケルチップを使用することが望ましい。\n\n【0046】例えば、 希土類系ボンド磁石表面に置換 Snめっき被膜と電気 Snめっき被膜 を一つのめっき浴において形成する場合においても、 めっき浴槽は磁石の形状に 応じて種々の浴槽を使用することができる。 めっき浴の pHは 3. 5〜9. 0で あることが望ましい。 3. 5未満であると酸性条件に不安定な希土類系ポンド磁 石に対して悪影響を及ぼす恐れがある一方、 9. 0を超えると形成された置換 S nめっき被膜の密着性が劣る恐れがあるからである。 めっき浴の浴温は 15°C〜 35°Cとすることが望ましい。 15°C未満であると形成された置換 Snめっき被 膜の表面が粗雑なものになる恐れがある一方、 35°Cを超えると浴温管理が難し く、 均一な置換 Snめっき被膜が形成されない恐れがあるからである。 このよう なめつき浴を用いて置換 S nめっき被膜を形成した後に電気 S nめっき被膜を形 成するに際しては、 電流密度は 0. 1八 (11112〜5. OAZdm2とすること が望ましい。 0. 1 AZdm2未満であると成膜速度が遅くて生産性に劣る恐れ がある一方、 5. 0 AZdm2を超えると形成された電気 Snめっき被膜の表面 が粗雑なものとなり、 ピンホールが多数発生する恐れがあるからである。\n\n【0047】例えば、 希土類系ボンド磁石表面に置換 Cuめっき被膜と電気 Cuめっき被膜 を一つのめっき浴において形成する場合においても、 めっき浴槽は磁石の形状に 応じて種々の浴槽を使用することができる。 めっき浴の pHは 5. 0〜8. 5で あることが望ましい。 5. 0未満であると酸性条件に不安定な希土類系ポンド磁 石に対して悪影響を及ぼす恐れがある一方、 8. 5を超えると形成された置換 C uめっき被膜の密着性が劣る恐れがあるからである。 めっき浴の浴温は 25°C〜\n\n70°Cとすることが望ましい。 25 未満であると形成された置換 Cuめっき被 膜の表面が粗雑なものになる恐れがある一方、 70°Cを超えると浴温管理が難し く、 均一な置換 Cuめっき被膜が形成されない恐れがあるからである。 このよう なめつき浴を用いて置換 C uめっき被膜を形成した後に電気 C uめっき被膜を形 成するに際しては、 電流密度は 0. lAZdm2〜5. OAZdm2とすること が望ましい。 0. lAZdm2未満であると成膜速度が遅くて生産性に劣る恐れ がある一方、 5. 0 AZdm2を超えると形成された電気 Cuめっき被膜の表面 が粗雑なものとなり、 ピンホールが多数発生する恐れがあるからである。 なお、 めっき浴としては希土類系ポンド磁石に対する腐食性と浸透性が低い中性 Cuめ つき浴が望ましく、 とりわけ、 硫酸銅とエチレンジァミン四酢酸と亜硫酸ナトリ ゥムを主成分とする中性 Cu—EDT A浴が望ましい。\n\n【0048】本発明の方法によってリング状ポンド磁石表面に電気めつき被膜を形成した場 合、 ともすれば、 その内側表面に局部的凸部が発生する場合がある。 この現象は 第 1金属の粉末を分散させた樹脂からなる非導電性被膜の主体として使用した榭 脂の硬度が低い場合に散見されることから、 この現象を回避するためには、 非導 電性被膜の主体として使用する樹脂は硬度が高いもの、 具体的には、 樹脂自体の 硬化時のロックウェル硬度が M 80以上のもの、 例えば、 フエノール樹脂 （Ml 10) 、 エポキシ樹脂 （M80) 、 アクリル樹脂 （M80) 、 ポリエステル樹脂 (M80) 、 ポリイミド樹脂 （Ml 28) などを使用することが望ましい。 とり わけ、 このような樹脂の中でも、 ポリイミド樹脂に代表される耐熱性熱硬化性樹 脂、 いわゆる、 スーパ一エンジニアリングプラスチックは、 磁石に熱と荷重が加 わった場合でも、 樹脂部分が軟化してしまって樹脂によって分散されていた第 1 金属の粉末が結合性を獲得し、 その結果、 体積抵抗率が低下して非導電性被膜と しての特性が劣化してしまうといったことを効果的に防止する作用を有する、 即 ち、 非導電性被膜に耐熱性を付与する作用を有する点においてより望ましい。 な お、 複数の樹脂を混合して使用する場合においては、 混合樹脂自体の硬化時の口 ックゥエル硬度が M 80以上となるように個々の樹脂を組み合わせて使用するこ とが望ましい。 例えば、 エポキシ樹脂とポリイミド樹脂との混合樹脂は、 混合樹 脂自体の硬化時のロックウェル硬度が M80以上であり、 相溶性に優れるととも\n\nに、 金属粉末の分散性にも優れ、 さらに、 上記のように耐熱性の点においても優 れることから望ましい混合樹脂といえる。 また、 電気めつき被膜を形成するため のめつき浴に添加される光沢剤、 例えば、 芳香族スルフォンアミドゃ芳香族スル フォンイミドなどのサッカリン系光沢剤、 2—ブチン— 1， 4—ジオールなどの ブチンジオール系光沢剤の添加量を調整することによって、 非導電性被膜表面に 積層形成されためつき被膜の応力を緩和し、 局部的凸部の発生を回避するように してもよい。\n\n【0049】なお、 以上のようにして形成される電気めつき被膜の上に、 更に別の電気めつ き被膜などを積層形成してもよい。 このような構成を採用することによって、 物 品の耐食性や機械的強度などの特性を増強 ·補完したり、 更なる機能性を付与し たりすることができる。\n\n【0050】本発明が適用される物品としての希土類系永久磁石のうち、 ポンド磁石は、 磁 性粉と樹脂バインダ一を主成分とするものであれば磁気的等方性ポンド磁石であ つても磁気的異方性ポンド磁石であってもよい。 また、 樹脂バインダーにより結 合形成されたものの他、 金属バインダーや無機バインダ一などにより結合成形さ れたものであってもよい。 さらに、 バインダーにフィラーを含むものであっても よい。\n\n【0051】希土類系ボンド磁石としては、 種々の組成のものや結晶構造のものが知られて いるが、 これらすべてが本発明の対象となる。\n\n【0052】例えば、 特開平 9一 92515号公報に記載されているような異方性 R_F e 一 B系ポンド磁石、 特開平 8— 203714号公報に記載されているようなソフ ト磁性相 （例えば、 a— Feや Fe3B) とハード磁性相 （Nd2Fe14B) を 有する Nd— Fe— B系ナノコンポジット磁石、 従来から広く使用されている液 体急冷法により作成された等方性 Nd_Fe— B系磁石粉末 （例えば、 商品名： MQP-B * MQ I社製） を用いたボンド磁石などが挙げられる。\n\n【0053】また、 特公平 5— 82041号公報記載の （Fe i—XRX)x_yNy(0. 07 ≤x≤0. 3, 0. 00 l≤y≤0. 2 ) で表される R— F e—N系ポンド磁石 などが挙げられる。\n\n【0054】なお、 希土類系ポンド磁石を構成する磁性粉は、 希土類系永久磁石合金を溶解\n\nし、 铸造後に粉砕する溶解粉砕法、 一度焼結磁石を作成した後、 これを粉砕する 焼結体粉碎法、 C a還元にて直接磁性粉を得る直接還元拡散法、 溶解ジェットキ ヤス夕一で希土類系永久磁石合金のリボン箔を得、 これを粉砕 ·焼純する急冷合 金法、 希土類系永久磁石合金を溶解し、 これをアトマイズで粉末化して熱処理す るアトマイズ法、 原料金属を粉末化した後、 メカニカルァロイングにて微粉末化 して熱処理するメカニカルァロイ法などの方法で得ることができる。\n\n【0055】また、 R— F e—N系ポンド磁石を構成する磁性粉は、 希土類系永久磁石合金 を粉碎し、 これを窒素ガス中またはアンモニアガス中で窒化した後、 微粉末化す るガス窒化法などの方法でも得ることができる。\n\n【0056】本発明の効果は、 希土類系永久磁石を構成する磁性粉の組成、 結晶構造、 異方 性の有無などにより異なるものではない。 従って、 希土類系永久磁石がポンド磁 石であっても焼結磁石であっても、 目的とする効果を得ることができるが、 この 効果はとりわけボンド磁石に対して有益なものとなる。\n\n【0057】また、 複数の希土類系永久磁石を嫌気性接着剤などの接着剤を用いて積層した 積層磁石に対して本発明を適用すれば、 磁石と磁石の間の接着剤厚み部分も含め て積層磁石表面全体に電気めつき被膜を形成することができる。 従って、 磁石と 接着剤との間の接着界面への接着劣化起因物質 （水分など） の浸入を阻止するこ とができるので、 接着劣化防止効果を得ることができる。\n\n【0058】また、 リング状希土類系ポンド磁石は、 自動車などに装着される液体燃料 （ガ ソリン、 軽油、 液体石油ガスなど） の送液ポンプ用モータに組み込まれて使用さ れたりするなど、 液体燃料の存在下を使用環境とする場合があるが、 その表面に 第 1金属の粉末を分散させた樹脂からなる非導電性被膜を形成した後、 非導電性 被膜形成磁石を第 1金属より貴な第 2金属のイオンを含む溶液に浸漬することで 非導電性被膜表面に第 2金属の置換めつき被膜を形成し、 さらに置換めつき被膜 表面に第 3金属の電気めつき被膜を形成することで、 リング状希土類系ボンド磁 石に、 液体燃料に対する優れた耐久性を付与することができる。 この場合、 好適 な第 3金属としては、 液体燃料に対して高い耐食性を発揮するニッケルやスズが 挙げられる。\n\n実施例\n\n【0059】本発明を以下の実験によってさらに詳細に説明するが、 本発明は以下の記載に 何ら限定されるものではない。\n\n【0060】実験 A (リング状希土類系ポンド磁石表面への電気めつき被膜の形成）\n\n【0061】急冷合金法で作製した、 Nd： 12原子％、 F e ： 77原子％、 B： 6原子％、 Co： 5原子％の組成からなる平均長径 150 mの合金粉末にエポキシ樹脂を 2wt %加えて混練し、 686 NZmm2の圧力で圧縮成形した後、 150°Cで 1時間キュアすることによって作製された、 外径 3 OmmX内径 28mmX長 さ 4mmのリング状ポンド磁石 （以下、 磁石体試験片と称する） を用いて以下の 実験を行った。\n\n【0062】実施例 1 ：\n\n【0063】非導電性の亜鉛粉末分散樹脂としてェポローバル （ローバル社製の商品名：亜 鉛粉末の平均粒径は 4 zmで硬化時のロックウェル硬度が M 80のエポキシ樹脂 を主体とする） を使用し、 これをェポロ一バル専用シンナー （ローバル社製の商 品名） で希釈した後 （重量比でェポローバル： シンナー =1 ： 0. 5)、 均一に 攪拌することにより非導電性の亜鉛粉末分散樹脂溶液を調製した。 得られた溶液 をガン口径 1. 5 mmのエアスフ。レ一装置を使用し、 吹付圧力 0. 2MP aの条 件にて磁石体試験片表面全面に吹付け、 スプレー塗装を行った後、 常温 （2 0°C) における 60分間の乾燥と 200°Cにおける 30分間の焼付けを行い、 亜 鉛粉末の分散量が 96重量％である膜厚 15 m (断面観察による） の非導電性 被膜 （体積抵抗率 3Χ 105Ω · cm: J I S— H0505による） を磁石体試 験片表面に形成した。 この亜鉛粉末を分散させた樹脂からなる非導電性被膜を有 する磁石体試験片について、 35 °Cの 5重量％食塩水を噴霧するという塩水噴霧 試験を行ったところ、 500時間経過後も外観に変化が見られた磁石体試験片は 存在しなかった （n=50)。\n\n【0064】25個の亜鉛粉末を分散させた樹脂からなる非導電性被膜を有する磁石体試験 片を容量 2. 8 Lのバレル槽に直径 4mmのアルミナメディア 2. 0Lとともに 投入し、 振幅 0mm、 振動数 6 OH zの条件にて 30分間バレル研磨した。 バレル研磨が施された非導電性被膜を有する磁石体試験片を 3分間超音波水洗\n\nした後、 硫酸ニッケル · 5水和物 240 gZL、 塩化ニッケル · 5水和物 45 g ノ L、 ホウ酸 35 gZLを含み、 炭酸ニッケルで pHを 4. 2に調整した液温 5 5t:のヮット浴に磁石体試験片を浸潰し、 30分間電圧をかけずに非導電性被膜 表面に置換 N iめっき被膜を形成した。 25個の磁石体試験片の内の 5個をこの 時点でヮット浴から取り出し、 形成された置換 N iめっき被膜の膜厚を調べたと ころ、 その平均値は 1 mであった （蛍光 X線観察による）。\n\n【0065】残りの 20個の磁石体試験片について、 その後、 電圧をかけて電流密度 1. 5 AZdm2の条件にて 90分間電気 N iめっき処理を行い、 置換 N iめっき被膜 表面に電気 N iめっき被膜を形成した。\n\n【0066】以上のようにして得られた最表面に電気 N iめっき被膜を有する磁石体試験片 を 3分間超音波水洗した後、 10 O :にて 60分間乾燥させた。\n\n【0067】20個の磁石体試験片の最表面の電気 N iめっき被膜を拡大鏡 （X4) にて 外観検査したところ、 ピンホールや突起や異物付着などを有する不良品は存在せ ず、 全てが均質な被膜で良品と評価された。 非導電性被膜表面に形成された N i めっき被膜の総厚の平均値 （n=5) は 25 であったことから （蛍光 X線観 察による）、 電気 N iめっき被膜の膜厚の平均値 （n=5) は 24^mであるこ とがわかった。\n\n【0068】15個の最表面に電気 N iめっき被膜を有する磁石体試験片に対して温度 6 Ot:x相対湿度 90%の高温高湿条件下に 500時間存置するという耐食性試 験を行ったところ、 いずれの磁石体試験片についても発錡ゃ被膜膨れや局部的凸 部などの外観異常は見受けられなかつた。\n\n【0069】比較例 1 ：\n\n【0070】平均粒径が 4 mの亜鉛粉末 75重量％、 キシレン 22重量％、 ェポミック (三井化学社製の商品名：硬化時のロックウェル硬度が M80の 1液型エポキシ 樹脂） 3重量％を混合し、 均一に攪拌することにより導電性の亜鉛粉末分散樹脂 溶液を調製した。 得られた溶液をガン口径 1. 5 mmのエアスプレー装置を使用 し、 吹付圧力 0. 2 MP aの条件にて磁石体試験片表面全面に吹付け、 スプレー 塗装を行った後、 常温 （20°C) における 60分間の乾燥と 200でにおける 3 0分間の焼付けを行い、 亜鉛粉末の分散量が 96重量％である膜厚 15 / m (断\n\n面観察による） の導電性被膜 （体積抵抗率 5 X 10-χΩ · cm： J I S-H0 505による） を磁石体試験片表面に形成した。 この亜鉛粉末を分散させた樹脂 からなる導電性被膜を有する磁石体試験片について、 35 °Cの 5重量％食塩水を 噴霧するという塩水噴霧試験を行ったところ、 500時間経過後には発鐯した磁 石体試験片が 2個存在した （n=50)。\n\n【0071】実施例 2 ：\n\n【0072】実施例 1と同じ非導電性の亜鉛粉末分散樹脂溶液を使用し、 実施例 1と同じェ 程を経て、 バレル研磨が施された亜鉛粉末を分散させた樹脂からなる非導電性被 膜を有する磁石体試験片を得た。 このバレル研磨が施された非導電性被膜を有す る磁石体試験片を 3分間超音波水洗した後、 実施例 1と同じヮッ卜浴に磁石体試 験片を浸漬した。 実施例 2においては実施例 1と異なり、 浸漬当初から電圧をか けて電流密度 1. 5 AZdm2の条件にて 120分間電気 N iめっき処理を行い、 最表面に電気 N iめっき被膜を形成した。\n\n【0073】以上のようにして得られた最表面に電気 N iめっき被膜を有する磁石体試験片 を 3分間超音波水洗した後、 100°Cにて 60分間乾燥させた。\n\n【0074】20個の磁石体試験片の最表面の電気 N iめっき被膜を拡大鏡 （X4) にて 外観検査したところ、 ピンホールや突起や異物付着などを有する不良品は存在せ ず、 全てが均質な被膜で良品と評価された。 非導電性被膜表面に形成された N i めっき被膜の総厚の平均値 （n=5) は 25 mであった （蛍光 X線観察によ る）。 実施例 2においては非導電性被膜表面に形成された置換 N iめっき被膜の 膜厚は測定できないが、 以上のような良質の電気 N iめっき被膜が最表面に形成 されることは、 その下層に置換 N iめっき被膜が形成され、 その表面全体に導電 性が付与されていることに起因するものであると推察された。\n\n【0075】15個の最表面に電気 N iめっき被膜を有する磁石体試験片に対して温度 6 0°CX相対湿度 90%の高温高湿条件下に 500時間存置するという耐食性試 験を行ったところ、 いずれの磁石体試験片についても発鲭ゃ被膜膨れや局部的凸 部などの外観異常は見受けられなかった。\n\n【0076】比較例 2 ：\n\n【0077】導電性のニッケル粉末分散樹脂としてエレシャット No. 10 EMC (大橋化\n\n学工業社製の商品名：ニッケル粉末の平均粒径は 5 mで硬化時のロックウェル 硬度が M 80のアクリル樹脂を主体とする） を使用し、 これを合成樹脂塗料用シ ンナー No. 5600 (大橋化学工業社製の商品名） で希釈した後 （重量比でェ レシャット ： シンナー =1 ： 0. 5)、 均一に攪拌することにより導電性のニッ ケル粉末分散樹脂溶液を調製した。 得られた溶液をガン口径 1. 5mmのエアス プレー装置を使用し、 吹付圧力 0. 2 MP aの条件にて磁石体試験片表面全面に 吹付け、 スプレー塗装を行った後、 常温 （20 ） における 60分間の乾燥と 2 00でにおける 30分間の焼付けを行い、 ニッケル粉末の分散量が 66重量％で ある膜厚 1 5 m (断面観察による） の導電性被膜 （体積抵抗率 2X 10一1Q * cm : J I S— H0505による） を磁石体試験片表面に形成した。\n\n【0078】実施例 1と同じ工程を経て、 バレル研磨が施されたニッケル粉末を分散させた 樹脂からなる導電性被膜を有する磁石体試験片を得、 このバレル研磨が施された 導電性被膜を有する磁石体試験片を 3分間超音波水洗した後、 実施例 1と同じヮ ット浴に磁石体試験片を浸漬し、 浸漬当初から電圧をかけて電流密度 1. 5AZ dm2の条件にて 120分間電気 N iめっき処理を行い、 最表面に電気 N iめつ き被膜を形成した。\n\n【0079】以上のようにして得られた最表面に電気 N iめっき被膜を有する磁石体試験片 を 3分間超音波水洗した後、 100°Cにて 60分間乾燥させた。\n\n【0080】20個の磁石体試験片の最表面の電気 N iめっき被膜を拡大鏡 （X 4) にて 外観検査したところ、 いずれの被膜についてもピンホール、 突起、 異物付着の少 なくとも一つが観察されるとともにめつきムラが大きく、 全てが不良品と評価さ れた。 導電性被膜表面に形成された N iめっき被膜の総厚の平均値 （n=5) は 25 mであった （蛍光 X線観察による）。 以上の結果は、 比較例 2においては 電気 N iめっき被膜の下層に置換 N iめっき被膜が形成されなかったために、 良 質の電気 N iめっき被膜が形成されるに足る導電性を付与することができなかつ たことに起因するものであると推察された。\n\n【0081】15個の最表面に電気 N iめっき被膜を有する磁石体試験片に対して温度 6 0°CX相対湿度 90%の高温高湿条件下に 500時間存置するという耐食性試 験を行ったところ、 いずれの磁石体試験片についても発錡ゃ被膜膨れや局部的凸\n\n部などの外観異常が発生した。\n\n【0082】実施例 3 ：\n\n【0083】導電性のニッケル粉末分散樹脂としてエレシャット No. 10EMC (大橋化 学工業社製の商品名：ニッケル粉末の平均粒径は 5 で硬化時のロックウェル 硬度が M 80のアクリル樹脂を主体とする） を使用し、 これをサンコート No. 503 (長島特殊塗料社製の商品名：硬化時のロックウェル硬度が M 80のェポ キシ樹脂を主体とする） とともに合成樹脂塗料用シンナー No. 5600 (大橋 化学工業社製の商品名） で希釈するとともに （重量比でエレシャット：サンコー ト ：シンナー =1 : 0. 2 : 0. 5 混合樹脂自体の硬化時のロックウェル硬度 は M80)、 さらにディスパロン #2150 (楠本化成社製の商品名：ァニオン 性分散媒） 0. 5重量％を添加して、 均一に攪拌することにより非導電性のニッ ゲル粉末分散樹脂溶液を調製した。 得られた溶液をガン口径 1. 5 mmのエアス プレー装置を使用し、 吹付圧力 0. 2 MP aの条件にて磁石体試験片表面全面に 吹付け、 スプレー塗装を行った後、 常温 （20で） における 60分間の乾燥と 2 00 における 30分間の焼付けを行い、 ニッケル粉末の分散量が 55重量％で ある膜厚 15 ^m (断面観察による） の非導電性被膜 （体積抵抗率 4 X I 04Ω · cm： J I S-H05.05による） を磁石体試験片表面に形成した。\n\n【0084】実施例 1と同じ工程を経て、 バレル研磨が施されたニッケル粉末を分散させた 樹脂からなる非導電性被膜を有する磁石体試験片を得、 このバレル研磨が施され た非導電性被膜を有する磁石体試験片を 3分間超音波水洗した後、 硫酸銅 · 5水 和物 25 gZL、 エチレンジァミン四酢酸 2ナトリウム 55 gZL、 酒石酸ナト リウム · 2水和物 28. 2 g/L, 硫酸ナトリウム 71 g/L, 亜硫酸ナトリウ ム 25. 2 gZLを含み、 水酸化ナトリウムで pHを 6. 8に調整した液温 4 0での Cuめっき浴に磁石体試験片を浸漬し、 30分間電圧をかけずに非導電性 被膜表面に置換 Cuめっき被膜を形成した。 25個の磁石体試験片の内の 5個を この時点で C uめっき浴から取り出し、 形成された置換 C uめつき被膜の膜厚を 調べたところ、 その平均値は 2 であった （蛍光 X線観察による）。\n\n【0085】残りの 20個の磁石体試験片について、 その後、 電圧をかけて電流密度 1. 5 AZ dm2の条件にて 90分間電気 Cuめっき処理を行い、 置換 Cuめっき被膜\n\n表面に電気 C uめっき被膜を形成した。\n\n【0086】以上のようにして得られた最表面に電気 C uめっき被膜を有する磁石体試験片 を 3分間超音波水洗した後、 100°Cにて 60分間乾燥させた。\n\n【0087】20個の磁石体試験片の最表面の電気 Cuめっき被膜を拡大鏡 （X4) にて 外観検査したところ、 ピンホールや突起や異物付着などを有する不良品は存在せ ず、 全てが均質な被膜で良品と評価された。 非導電性被膜表面に形成された Cu めっき被膜の総厚の平均値 （n=5) は 24 /mであったことから （蛍光 X線観 察による）、 電気 Cuめっき被膜の膜厚の平均値 （n==5) は 22 mであるこ とがわかった。\n\n【0088】15個の最表面に電気 C uめっき被膜を有する磁石体試験片に対して温度 6 0で X相対湿度 90%の高温高湿条件下に 500時間存置するという耐食性試 験を行ったところ、 いずれの磁石体試験片についても若干茶色に変色したが発鑌 や被膜膨れや局部的凸部などは見受けられなかった。\n\n【0089】実施例 4 ：\n\n【0090】実施例 1と同様にして作成したバレル研磨が施された非導電性被膜を有する磁 石体試験片を 3分間超音波水洗した後、 硫酸ニッケル · 5水和物 133 gZL、 硫酸ナトリウム 213 gZL、 塩化アンモニゥム 13 g/L、 ホウ酸 18 gZL を含み、 水酸化ナトリウムで pHを 5. 8に調整した液温 50での低ニッケル高 硫酸塩浴に磁石体試験片を浸漬し、 30分間電圧をかけずに非導電性被膜表面に 膜厚 1 mの置換 N iめっき被膜を形成した （蛍光 X線観察による）。 その後、 電圧をかけて電流密度 1. 5 AZ dm2の条件にて 90分間電気 N iめっき処理 を行い、 置換 N iめっき被膜表面に膜厚 24 の電気 N iめっき被膜を形成し た （蛍光 X線観察による）。\n\n【0091】以上のようにして得られた最表面に電気 N iめっき被膜を有する磁石体試験片 を 3分間超音波水洗した後、 100°Cにて 60分間乾燥させた。 磁石体試験片の 最表面の電気 N iめっき被膜を拡大鏡 （X4) にて外観検査したところ、 ピン ホールや突起や異物付着などの外観異常は見受けられなかった。 また、 この最表 面に電気 N iめっき被膜を有する磁石体試験片に対して温度 60°CX相対湿度 90%の高温高湿条件下に 500時間存置するという耐食性試験を行ったところ、\n\n発鲭ゃ被膜膨れや局部的凸部などの外観異常は見受けられなかった。 さらに、 こ の最表面に電気 N iめっき被膜を有する磁石体試験片に対して 120 のホット プレー卜に 3分間静置するという熱衝撃試験を行つたところ、 非導電性被膜と置 換 N iめっき被膜との密着性不良を原因とする外観異常は見受けられなかった。 実施例 5 ：\n\n【0092】非導電性の亜鉛粉末分散樹脂としてェポローバル （ローバル社製の商品名：亜 鉛粉末の平均粒径は 4 zmで硬化時のロックウェル硬度が M 80のエポキシ樹脂 を主体とする） を使用し、 これを BAN I (丸善石油化学社製の商品名：硬化時 のロックウェル硬度が Ml 28のポリイミド樹脂） とともにェポローバル専用シ ンナー （ローバル社製の商品名） で希釈した後 （重量比でェポローバル： BAN I ：シンナー =1 : 0. 2 : 0. 5 Z混合樹脂自体の硬化時のロックウェル硬度 は M90) 、 均一に攪拌することにより非導電性の亜鉛粉末分散樹脂溶液を調製 した。 得られた溶液をガン口径 1. 5 mmのエアスプレー装置を使用し、 吹付圧 力 0. 2 MP aの条件にて磁石体試験片表面全面に吹付け、 スプレー塗装を行つ た後、 常温 （20で） における 60分間の乾燥と 200でにおける 30分間の焼 付けを行い、 亜鉛粉末の分散量が 77重量％である膜厚 10/ m (断面観察によ る） の非導電性被膜 （体積抵抗率 2X 106Q * cm: J I S— H0505によ る） を磁石体試験片表面に形成した。\n\n【0093】この亜鉛粉末を分散させた棚 からなる非導電性被膜を有する磁石体試験片に 対し、 実施例 1と同様にしてバレル研磨を行った。 バレル研磨が施された非導電 性被膜を有する磁石体試験片を 3分間超音波水洗した後、 実施例 1と同じ工程を 経て、 非導電性被膜表面に膜厚 l ^mの置換 N iめっき被膜を形成し、 さらに置 換 N iめっき被膜表面に膜厚 24 //mの電気 N iめっき被膜を形成した （蛍光 X 線観察による）。\n\n【0094】以上のようにして得られた最表面に電気 N iめっき被膜を有する磁石体試験片 を 3分間超音波水洗した後、 100 にて 60分間乾燥させた。 磁石体試験片の 最表面の電気 N iめっき被膜を拡大鏡 （X4) にて外観検査したところ、 ピン ホールや突起や異物付着などの外観異常は見受けられなかった。 また、 この最表 面に電気 N iめっき被膜を有する磁石体試験片に対して温度 60°CX相対湿度\n\n9 0 %の高温高湿条件下に 5 0 0時間存置するという耐食性試験を行ったところ、 発鲭ゃ被膜膨れや局部的凸部などの外観異常は見受けられなかった。 さらに、 こ の最表面に電気 N iめっき被膜を有する磁石体試験片に対して 1 2 O tのホット プレートに 3分間静置するという熱衝撃試験を行つたところ、 非導電性被膜と置 換 N iめっき被膜との密着性不良を原因とする外観異常は見受けられなかった。 また、 この最表面に電気 N iめっき被膜を有する磁石体試験片 （以下、 サンプ ルと称する） に対し、 ガソリン耐久性試験として次の試験を行った。 サンプル 3 個を市販のレギュラーガソリン 1 2 mLとともに内容積 5 O mLの耐圧密閉容器 に収容して蓋を締結した。 その後、 この耐圧密閉容器をウォー夕一バス （恒温水 槽） に収納し、 8 0 にて 2時間保温した後 （ガソリンの蒸気圧により容器内圧 は約 3 0 0 k P aとなる）、 耐圧密閉容器をウォーターバスから取り出し、 大気 中で 1 2時間保持するという操作を 1サイクルとし、 この操作を 5サイクル、 1 5サイクル、 3 0サイクル、 5 0サイクル行った後のサンプルについて、 寸法変 化 （外径と内径と高さ）、 重量変化、 圧環強度 （リングの中心線に垂直方向から 加重をかけ、 リングが破壊したときの加重） 変化を調べた。 その結果、 サンプル は、 上記の操作を 5 0サイクル行った後も、 いずれの評価項目に関しても特段の 変化は観察されず、 ガソリンに対して優れた耐久性を発揮した。 磁気特性につい ては僅かに劣化したが、 実用上問題になる程度のものではなかった。 なお、 磁石 体試験片そのものに対し、 以上のガソリン耐久性試験を行った場合、 磁石体試験 片は、 樹脂バインダーがガソリンにより膨潤したことで、 寸法増加が顕著であつ た。\n\n【0095】実施例 6 ：\n\n【0096】実施例 5と同様にして作成したバレル研磨が施された非導電性被膜を有する磁 石体試験片を 3分間超音波水洗した後、 実施例 4と同じ工程を経て、 非導電性被 膜表面に膜厚 1 mの置換 N iめっき被膜を形成し、 さらに置換 N iめっき被膜 表面に膜厚 2 4 mの電気 N iめっき被膜を形成した （蛍光 X線観察による）。 以上のようにして得られた最表面に電気 N iめっき被膜を有する磁石体試験片 を 3分間超音波水洗した後、 1 0 0 にて 6 0分間乾燥させた。 磁石体試験片の 最表面の電気 N iめっき被膜を拡大鏡 （X 4 ) にて外観検査したところ、 ピン\n\nホールや突起や異物付着などの外観異常は見受けられなかった。 また、 この最表 面に電気 N iめっき被膜を有する磁石体試験片に対して温度 60°CX相対湿度 90%の高温高湿条件下に 500時間存置するという耐食性試験を行ったところ、 発鲭ゃ被膜膨れや局部的凸部などの外観異常は見受けられなかった。 さらに、 こ の最表面に電気 N iめっき被膜を有する磁石体試験片に対して 120\" のホット プレートに 3分間静置するという熱衝撃試験を行つたところ、 非導電性被膜と置 換 N iめっき被膜との密着性不良を原因とする外観異常は見受けられなかった。 実験 B (透明アクリル板表面への電気めつき被膜の形成）\n\n【0097】小型振動バレル （チップトン社製： VM— 10) に、 縦 60mmx横 20m mx厚さ 2mmの透明ァクリル板 5枚と容積にして 2 L分のアルミナメディァ\n\n【0098】(チップトン社製： PSc/)4) を装填し、 透明アクリル板の表面研磨を 30分間 行った。 次に表面研磨が施された透明ァクリル板をァセトン中に 1分間浸漬して 表面脱脂した後、 自然乾燥させた。\n\n【0099】非導電性の亜鉛粉末分散樹脂としてェポロ一バル （ローバル社製の商品名：亜 鉛粉末の平均粒径は 4 / m) を使用し、 これをェポロ一バル専用シンナー （ロー バル社製の商品名） で希釈した後 （重量比でェポロ一バル：シンナー =1 ： 0. 7 )、 均一に攪拌することにより非導電性の亜鉛粉末分散樹脂溶液を調製した。 得られた溶液をガン口径 1. 2 mmのエアスプレー装置を使用し、 吹付圧力 0. 2 MP aの条件にて透明アクリル板表面全面に吹付け、 スプレー塗装を行った後、 常温 （20°C) における 60分間の乾燥と 200°Cにおける 30分間の焼付けを 行い、 亜鉛粉末の分散量が 96重量％である膜厚 15 m (断面観察による） の 非導電性被膜 （体積抵抗率 2X 105Q * cm : J I S—H0505による） を 透明ァクリル板表面に形成した。\n\n【0100】小型振動バレル （チップトン社製： VM— 10) に、 工程 1で得られた表面に 非導電性被膜が形成された透明ァクリル板 5枚と容積にして 2 L分のアルミナメ ディア （チップトン社製： PS【0101】表面研磨が施された非導電性被膜を有する透明ァクリル板を、 硫酸ニッケル · 5水和物 240 gZL、 塩化ニッケル\' 5水和物 45 gZL、 ホウ酸 35 gZL\n\nを含み、 塩基性炭酸ニッケルで PHを 4. 2に調整した液温 55°Cのワット浴に 浸漬し、 30分間電圧をかけずに非導電性被膜表面に置換 N iめっき被膜を形成 した。 5枚の透明アクリル板の内の 2枚をこの時点でワット浴から取り出し、 形 成された置換 N iめっき被膜の膜厚を調べたところ、 その平均値は 1 であつ た （断面観察による）。 このようにして形成された置換 N iめっき被膜は、 金属 N iとしての表面性状を呈し、 体積抵抗率が 5 X 10—6Ω · cmであった。 従 つて、 装飾性や帯電防止などのための表面導電性などを付与する目的においては、 この段階のものであっても実用上満足できるに足ることがわかった。\n\n【0102】残りの 3枚の透明アクリル板について、 その後、 電圧をかけて電流密度 1. 5 AZdm2の条件にて 90分間電気 N iめっき処理を行い、 置換 N iめっき被膜 表面に電気 N iめっき被膜を形成した。\n\n【0103】以上のようにして得られた最表面に電気 N iめっき被膜を有する透明アクリル 板を 3分間超音波水洗した後、 100°Cにて 60分間乾燥させた。\n\n【0104】3枚の透明アクリル板の最表面の電気 N iめっき被膜を拡大鏡 （X4) にて 外観検査したところ、 ピンホールや突起や異物付着などを有する不良品は存在せ ず、 全てが均質な被膜で良品と評価された。 非導電性被膜表面に形成された N i めっき被膜の総厚の平均値 （n=3) は 25 mであったことから （断面観察に よる）、 電気 N iめっき被膜の膜厚の平均値 （n = 3) は 24 mであることが わかった。\n\n【0105】実験 C (木製マスコットバット表面への電気めつき被膜の形成）\n\n【0106】長さ 24 OmmX直径約 1 Ommの木製マスコットバッ卜に対して実験 Bと 同様にしてその表面に均一で緻密な電気 N iめっき被膜を優れた密着性でもって 形成した。\n\n【0107】実験 D (ダンポール紙表面への電気めつき被膜の形成）\n\n【0108】縦 6 Ommx横 20 mm X厚さ 2 mmのダンポール紙に対して実験 Bと同様 にして （但し、 小型振動バレルを使用した 2回の表面研磨工程は省略） その表面 に均一で緻密な電気 N iめっき被膜を優れた密着性でもって形成した。\n\n【0109】実験 E (透明ガラス板表面への電気めつき被膜の形成）\n\n【0110】縦 6 Ommx横 20 mmx厚さ 2 mmの透明ガラス板に対して実験 Bと同様\n\nにしてその表面に均一で緻密な電気 N iめっき被膜を優れた密着性でもって形成 した。\n\n【0111】実験 F (アルミニウム板表面への電気めつき被膜の形成）\n\n【0112】縦 6 0 mm X横 2 0 mm X厚さ 2 mmのアルミニウム板に対して実験 Bと同 様にしてその表面に均一で緻密な電気 N iめっき被膜を優れた密着性でもって形 成した。\n\n【0113】実験 G (マグネシウム合金板表面への電気めつき被膜の形成）\n\n【0114】縦 6 O mm X横 2 0 mm X厚さ 2 mmのマグネシウム合金板に対して実験 B と同様にしてその表面に均一で緻密な電気 N iめっき被膜を優れた密着性でもつ て形成した。 産業上の利用可能性\n\n【0115】本発明によれば、 物品の表面材質や表面性状に依存することなくその表面に均 一で緻密な電気めつき被膜を優れた密着性でもって形成する方法が提供される。', '【0001】在物品表面形成电镀膜的方法技术领域\n\n  【0002】本发明涉及一种在制品的表面上形成均匀且致密的电镀膜的方法，其具有优异的粘附性，而与制品的表面材料或表面性质无关。 背景技术\n\n  【0003】为了赋予物品装饰性，耐候性，抗静电性，电磁波屏蔽性，抗菌性，耐冲击性等表面导电性，通常在表面形成金属被膜。 从一开始就已经完成了。 尽管形成金属涂层的方法多种多样，但是通过电镀形成电镀涂层的方法因其适于大规模生产而被广泛使用。\n\n  【0004】然而，为了在制品表面上形成电镀膜，制品表面需要导电性。 因此，不可能在由诸如塑料，木材，纸，玻璃，陶瓷，橡胶和混凝土之类的非导电材料制成的制品的表面上直接形成电镀膜。 在某些情况下，希望在由诸如镁，铝和钛之类的金属制成的制品（例如手机和笔记本个人计算机外壳）的表面上形成金属涂层，但是镁是最基础的金属之一。 在那儿。 因此，即使在表面上形成电镀膜，一旦将其浸入电镀浴中，也会发生快速位移的电镀反应，从而难以形成良好的电镀膜。 在那儿。 铝和钛是高度可氧化的金属，它们的表面通常覆盖有非常致密的金属氧化物膜。 因此，尽管这些金属具有低的离子化趋势，但由于它们具有高的离子化趋势，因此难以进行电镀处理。 如果去除存在于表面上的金属氧化物膜，则可以形成电镀膜，但是需要特殊的蚀刻技术，并且在去除金属氧化物膜之后，再次去除金属氧化物膜。 有必要在电镀前进行电镀工艺\n\n 有限制，所以必须说存在实际问题。 通过浸泡在包含氢氧化钠和氢氧化锌的溶液中，在强碱性环境中进行蚀刻，并且同时形成锌置换镀膜。 还有一种通过形成板坯的过程来进行电镀处理的方法，但是整个过程很复杂。\n\n  【0005】此外，当尝试在木质蝙蝠，砖头和压铸产品等物品的表面形成均匀的电镀膜时，表面上有孔，细小沟槽和不规则处， 另一方面，不仅要解决如何赋予导电性的问题，而且还必须解决如何确保物品表面的平滑性的问题。\n\n  【0006】此外，由高腐蚀性材料（例如镁等金属）制成的物品在进行带电处理时可能会腐蚀。 形成涂膜有困难。\n\n  【0007】在尝试通过使用已知技术解决上述问题的情况下，在JP-A-61-210183中描述了其中金属粉末分散在制品表面上的树脂。 在形成由以下材料制成的树脂涂层之后，在该树脂涂层的表面上形成化学镀膜的方法： 可以想象的。 然而，化学镀膜是通过在还原剂的作用下将镀液中的金属离子还原而形成的膜，以使金属沉积在镀敷对象物的表面上，因此附着在镀敷对象物上。 除了性能差之外，其成膜效率也差。 还存在通过使用钯催化剂或铂催化剂来提高膜形成效率的方法，但是该方法不能避免成本增加。 另外，不可否认的是，源自化学镀膜中所含的还原剂的杂质对表面上的电镀膜的形成有不利影响。\n\n  【0008】因此，本发明的目的是提供一种在不依赖于制品的表面材料和表面性质的情况下形成在表面上具有优异粘附性的均匀且致密的电镀膜的方法。 去做。 发明内容\n\n  【0009】考虑到以上几点，本发明人进行了各种研究并完成了本发明。\n\n 2.根据权利要求1所述的在光亮的物品的表面上形成电镀涂层的方法，其特征在于，在形成由架子构成的树脂涂层之后，在架子上将第一金属的粉末分散在物品的表面上。 通过将形成树脂膜的物品浸入含有比第一金属具有更高电势的第二金属离子的溶液中，在树脂涂层表面上形成第二金属置换镀膜。 其特征在于在其上形成第三金属的电镀膜。 权利要求2所述的形成方法，其特征在于，在权利要求1所述的形成方法中，所述树脂膜为非导电膜。\n\n  【0010】此外，根据权利要求3所述的成形方法，其特征在于，在根据权利要求2所述的成形方法中，所述物品是稀土类永磁体。\n\n  【0011】此外，根据权利要求4所述的成形方法，其特征在于，在根据权利要求3所述的成形方法中，所述稀土类永磁体是粘结磁体。\n\n  【0012】此外，在根据权利要求5的形成方法中，在根据权利要求2的形成方法中，非导电膜的体积电阻率为1×104Ω·cm。 以上是功能。\n\n  【0013】此外，在根据权利要求6的成形方法中，在根据权利要求1的成形方法中，第一金属粉末在树脂涂层中的分散量为50重量％至99重量％。 其特征在于重量％。\n\n  【0014】此外，在根据权利要求7的成形方法中，在根据权利要求1的成形方法中，第一金属的粉末的平均粒径为0.001m至30m。 它的特点是\n\n  【0015】此外，根据权利要求8所述的形成方法，其特征在于，在根据权利要求1所述的形成方法中，所述树脂膜的厚度为1 / m至100m。 去做。 此外，根据权利要求9所述的形成方法，其特征在于，在根据权利要求1所述的形成方法中，所述第一金属为锌，所述第二金属为镍或锡。\n\n  【0016】此外，根据权利要求10所述的形成方法，其特征在于，在根据权利要求1所述的形成方法中，所述第一金属为Nigel，所述第二金属为铜。  .. 技术方案11所述的成形方法的特征在于，技术方案1所述的成形方法中，所述第二金属和所述第三金属为相同的金属。\n\n 此外，根据权利要求12的形成方法与根据权利要求11的形成方法相同，其中，形成置换镀膜的步骤和形成电镀膜的步骤在一个镀浴中进行。 它的特点是表演。\n\n  【0017】此外，在根据权利要求13的形成方法中，在根据权利要求1的形成方法中，替换膜的膜厚度为0.05m至2 // m 它的特点是\n\n  【0018】此外，本发明的物品的特征在于，通过如权利要求14所述的权利要求1所述的形成方法在表面上形成电镀膜。 去做。 此外，如权利要求15所述，在本发明的制品表面上形成替代涂层的方法是在制品表面上形成由树脂制成的ST油涂层，其中分散有第一金属的粉末。 之后，该树脂被膜形成物的特征在于，通过将树脂被膜形成物浸渍在含有比第一金属具有更高电位的第二金属的离子的溶液中，从而在树脂膜的表面上形成第二金属的置换膜。  ..\n\n  【0019】此外，本发明的物品的特征在于，通过如权利要求16所述的根据权利要求15的形成方法在表面上形成置换涂层。 去做。 此外，如权利要求17所述，在本发明的表面上具有镀层的稀土类永磁体包含树脂，其中第一金属的粉末分散在稀土类永磁体的表面上。 在形成非导电膜之后，将非导电膜形成磁体浸入包含比第一金属更贵重的第二金属的离子的溶液中，以形成在非导电膜的表面上置换有第二金属的膜。 其特征在于，其通过在镀膜的表面上进一步错位形成第三金属的镀膜来制造。\n\n  【0020】此外，通过将第一金属的粉末分散在权利要求18所述的稀土基永磁体的表面上，来获得在其表面上具有本发明的电镀膜的稀土基永磁体。 形成由树脂制成的非导电涂层，并且通过比第一金属更贵重的第二金属的置换镀膜在非导电涂层的表面上形成第三金属的电镀膜。 和\n\n  【0021】此外，在表面上具有本发明的置换涂层的稀土类永磁体是权利要求19所述的在其表面上分散有第一金属的粉末的稀土类永磁体。 形成由树脂制成的非导电膜，并且该非导电膜的表面比第一金属更贵重。\n\n 形成属置换涂层。\n\n  【0022】此外，如权利要求20所述，在表面具有本发明的非导电性被膜的稀土类永磁体是在稀土类永磁体的表面分散有第1金属的粉末的树脂。 由非导电涂层形成。 实施本发明的最佳模式\n\n  【0023】在本发明的物品的表面上形成电镀涂层的方法包括：形成由树脂制成的树脂涂层，其中第一金属的粉末分散在物品的表面上； 通过将其浸入含有比第一金属具有更高电势的第二金属离子的溶液中，在树脂膜的表面上形成具有第二金属位移的膜，并在第二位移膜的表面上电镀第三金属。 其特征在于形成涂膜。\n\n  【0024】在本发明的在物品表面上形成电镀涂层的方法中，在物品表面上形成由其中分散有第一金属的粉末的架子组成的树脂涂层，然后形成该树脂涂层的表面。 通过使用源自存在于树脂附近的第一金属的粉末的置换镀覆反应，在树脂涂膜的整个表面上形成密合性优异的第二金属的置换镀膜。 结果，导电性赋予制品的整个表面，使得可以在置换镀膜的表面上形成具有优异粘附性的第三金属的均匀且致密的电镀膜。 成为。 因此，不管制品的表面材料和表面纹理如何，均一且精确的电镀膜在由所有材料例如塑料，木材，纸张，玻璃，陶瓷，橡胶，混凝土和金属制成的制品表面上都是优异的。 它可以形成具有良好的附着力。\n\n  【0025】以下，将逐步描述在本发明的制品表面上形成电镀涂层的方法。 \n\n【0026】处理1：\n\n  【0027】首先，在制品的表面上形成由树脂制成的树脂膜，其中分散有第一金属的粉末。 作为主要构成树脂涂层的树脂，例如，可以使用热固性树脂。 其具体实例包括酚醛树脂，环氧树脂，三聚氰胺树脂，丙烯酸树脂，聚酯树脂，聚氨酯树脂，聚酰亚胺树脂，苯乙烯丙烯酸树脂及其混合树脂。\n\n 对分散在树脂膜中的第一金属的粉末的种类没有特别限制，但是为了在随后的步骤中引起取代反应，第一金属的碱电势低于第二金属的碱电势。 必须拥有。 因此，考虑到与第二金属的电势差来适当地选择第一金属。 第一金属和第二金属的组合的具体实例包括作为第一金属的锌和作为第二金属的镍或锡的组合，或者作为第一金属的镍和作为第二金属的铜的组合。  ..\n\n  【0028】由其中分散有第一金属的粉末的树脂制成的树脂涂层可以是导电涂层或非导电涂层，但是它是高腐蚀性材料，例如诸如镁的金属。 理想的是，如后所述，在由（1）制成的制品的表面上形成的树脂涂层或在高腐蚀性稀土永磁体的表面上形成的树脂涂层是非导电涂层。 即使在置换镀覆处理或电镀处理期间树脂涂膜表面被腐蚀，也可能在通过置换镀膜形成在树脂覆膜表面上的树脂覆膜表面上形成针孔，划痕等。 这是因为即使发生缺陷并且树脂涂膜的表面通过该缺陷腐蚀，也可以防止腐蚀通过树脂涂膜的内部传播到物品的表面。\n\n  【0029】顺便提及，以Nd-Fe-B基永磁体为代表的稀土基永磁体，例如R_Fe_B基永磁体，是由资源丰富且廉价的材料制成的 由于其高磁性，它已在当今的各个领域中使用。\n\n  【0030】近年来，在使用稀土类永磁体的电子工业和家用电器工业中，组件的小型化和小型化正在发展。 我压力很大。\n\n  【0031】从这一观点出发，主要由磁性粉末和树脂粘合剂组成并且易于成型的聚焦磁体引起了人们的注意，并且已经在各种领域中得到实际应用。\n\n  【0032】稀土永磁体含有R，该R在大气中容易被氧化和腐蚀。 因此，当其未经表面处理而使用时，由于少量的酸，碱和湿气的影响，腐蚀从表面进行，这导致磁性能和变化的劣化。 将被邀请。 此外，如果将具有锚固件的磁体结合到诸如磁路的装置中，则锚固件会散布并污染外围部件。\n\n  【0033】为了解决该问题，在磁体表面上形成作为耐腐蚀膜的电镀膜。\n\n 已经进行了尝试。 然而，如果要在池塘磁体的表面上直接形成电镀膜，则由形成磁体表面的树脂粘合剂和这些磁体之间的树脂部分所绝缘的磁体粉末的电导率较低。 在某些情况下，不可能形成均匀且致密的涂层，结果，可能会出现针孔（未镀部分），这会导致开裂。\n\n  鉴于以上几点，作为在对粘结磁体的整个表面赋予导电性之后形成电镀膜的方法，例如，日本专利第2 7 1 9 6 5 8号（日本专利公开第4 1 7号） 日本专利公开No.6095）提出了一种方法，其中将树脂和导电材料粉末的混合物施加到粘结磁体的表面上以形成导电树脂膜，然后进行电镀。 但是，从微观的观点来看，该方法不一定给整个树脂表面提供足够的导电性，因此不能否认表面上存在导电性低的部分。 存在无法形成均匀且致密的电镀膜的问题。 另外，由于形成在磁体表面上的树脂膜是导电的，所以如果在电镀期间树脂膜表面腐蚀，则腐蚀将通过膜内部的导电部分而腐蚀到磁体表面。 还有一个问题。\n\n  【0035】此外，上述专利公开还提出了一种在对粘结磁体的表面进行化学镀之后进行化学镀的方法。 例如，作为处理液的溶剂的水和包含在处理液中的各种成分可能残留在磁体的孔中，从而导致磁体的腐蚀。 很难说它具有出色的附着力。\n\n  【0036】因此，由于到目前为止提出的上述方法不能获得令人满意的结果，因此提出了一种用于在粘结磁体的表面上形成电镀膜的新方法。 期待已久。 根据本发明，可以在粘结磁体的表面上形成均匀且致密的电镀膜，并且具有优异的粘附性，并且可以通过将非导电膜用于粘结磁体表面上形成的树脂膜来形成。  ，可以赋予粘结磁铁优异的耐腐蚀性。\n\n  【0037】由其中分散有第一金属的粉末的树脂制成的非导电涂膜例如是其中分散有第一金属的粉末的非导电树脂本身，并且，如果需要， 将通过用有机溶剂稀释树脂而制备的溶液作为处理液喷雾到物品的表面。\n\n 通过安装产品或将物品浸入用于浸涂的处理液中，然后干燥将其形成。 其中分散有金属粉末的非导电树脂是可商购的，并且可以容易地获得。 即使其中分散有第一金属粉末的树脂是导电的，也应通过添加有机分散介质以均匀地分散和分离各个金属粉末，使处理液不导电。 你也可以 在这种情况下，作为有机分散介质，是阴离子分散介质（脂肪族多元羧酸，聚醚聚醚羧酸盐，高分子量聚酯酸多元胺盐，高分子量多元羧酸长链胺盐等）， 非离子分散介质（聚氧乙烯烷基醚，脱水山梨糖醇酯，磺酸盐，铵盐等羧酸盐），聚合物分散介质（水溶性环氧羧酸盐，磺酸盐，铵盐等） 考虑到与金属粉末的亲和力和成本，优选使用盐，例如苯乙烯-丙烯酸共聚物，nikka等。 处理液本身可以是导电的，只要它是能够形成非导电涂层的处理液即可。 在制备处理液时，可以适当地使用分散机，例如极磨机，磨碎机或砂磨机。\n\n  【0038】为了使树脂膜中的金属粉作为置换反应的起点并在树脂膜的整个表面上形成置换镀膜，金属粉应均匀且富于树脂膜表面及其附近。 有利地存在。 因此，从这一观点出发，期望制备处理液，使得分散在树脂涂膜中的金属粉末的量为50重量％以上。 尽管在树脂膜中分散的金属粉末的量的上限没有限制，但是通常难以制备其中金属粉的分散量超过99重量％的用于形成树脂膜的处理液。 存在问题（当金属粉末在处理液中凝结并沉降时，由于处理液的粘度增加而产生的问题和处理不良等问题）。 因此，在制造中，分散在树脂涂层中的金属粉末的量的上限为99重量％。\n\n  【0039】为了制备使金属粉末均匀分散的处理液，金属粉末的平均粒径为0.001！ 理想的是〜30m，理想的是0.01〜12m，理想的是2μm〜10m。 由树脂制成的树脂涂层，其中分散有如上所述形成的第一金属粉末。\n\n 当膜是不导电的膜时，由于膜是不导电的，所以即使膜的表面被腐蚀，也可以防止腐蚀从膜内部传播到制品表面。 它具有赋予制品本身耐腐蚀性的作用。 该效果包括涂层的自修复作用（当第一金属为锌时，第一金属的腐蚀化合物（ZnC12的腐蚀）·4Zn（OH）2和 Z n O等），并且由于树脂的溶胀而导致体积增大，即使膜中存在诸如针孔和划痕之类的缺陷，缺陷也被掩埋并牺牲了第一金属的腐蚀防护性能。 认为效果也在起作用。 为了使该效果更可靠，期望非导电涂层的体积电阻率为1×104Ω·cm以上。 可以将上述有机分散介质添加到处理液中，以抑制金属粉在处理液中的凝结/沉淀，并增强金属粉的分散性以提高体积电阻率。 当制品是稀土永磁体时，当将其掺入研钵中使用时，在其表面上具有高体积电阻率的非导电涂层的磁体在磁体内部将产生较少的涡电流。 因此，由于涡电流引起的发热而引起的热退磁也较小，因此有价值的是可以抑制电动机效率的降低。 当多个这样的磁体堆叠并结合到电动机中时，该值特别高。\n\n  【0040】除充分发挥上述效果外，树脂涂层的表面应光滑，金属粉末应均匀，丰富地存在于树脂涂层的表面及其附近，以使树脂涂层的整个表面均匀。 为了形成这种位移的膜，期望树脂涂膜的膜厚为1m〜100m。 然而，如果树脂膜的膜厚度增加，则可能不利地影响均匀电镀膜的形成。 因此，考虑到这一点以及当制品是稀土永磁体时磁体的有效体积，树脂涂层的膜厚度的上限更优选为30m。\n\n  【0041】为了在执行形成由分散有第一金属的粉末的树脂制成的树脂涂层的步骤之前，提高制品表面与树脂涂层之间的界面处的粘合性， 已知的清洁可以通过使表面脱脂来执行，或者可以通过滚筒抛光来赋予锚固效果。\n\n  【0042】步骤2： \n\n接下来，在步骤1中，将其上形成有树脂涂层的物品浸入含有比第一金属的电位更高的第二金属离子的溶液中，从而用第二金属代替树脂涂层的表面。 拍电影。 第二金属置换涂层具有赋予制品整个表面导电性的功能，并且还防止第一金属的粉末从树脂涂层脱落，从而有助于制品表面清洁度的提高。  .. 该步骤可以根据用于形成置换镀膜的常规方法进行，但是从确保随后的步骤中的足够的导电性以形成均匀且致密的第三金属电镀膜的角度考虑。 因此，期望形成膜厚度为0.05m以上的膜。 在形成替换涂层之前，在表面上形成树脂涂层，以使树脂涂层的表面光滑并且暴露出均匀分散在树脂涂层中的第一金属粉末的活性表面。 物品可以被滚筒抛光。 尽管对具有位移的膜的膜厚度的上限没有特别限制，但是考虑到制造成本，其优选为2μm或更小。 应当注意，出于赋予制品装饰性或抗静电性的表面导电性等的目的，即使在表面具有取代涂层的该步骤实际上也是令人满意的。 可以获得效果。\n\n  【0043】步骤3：\n\n  【0044】最后，在步骤2中形成的替代镀膜的表面上形成第三金属的电镀膜。 该步骤可以根据用于形成电镀膜的常规方法来执行。 如上所述，必须考虑第一金属和第二金属之间的电势差，但是必须考虑相对于第二金属的第三金属。 但通常形成为电镀涂层，例如镍，铜，锡，钴，锌，铬，银，金，铅，铂等。 被用作第三种金属。 因此，即使第二金属和第三金属是相同的金属也没有问题。 如果第二金属和第三金属是相同的金属，也就是说，如果形成电镀膜的金属和形成电镀膜的金属是相同的金属，则形成形成替代膜的膜。 在一个电镀浴中进行形成电镀膜的步骤2和步骤3是很方便的。 就是说，例如，在将镀有镀有第一金属粉末的树脂的树脂涂层形成在其表面上的浸入开始时，\n\n 当不施加时，进行置换镀覆反应以形成置换镀膜，然后可以通过施加电压来形成电镀膜。 即使是从浸渍开始就施加电压的情况下，在浸渍的初期，也将在表面上分散有第一金属的粉末的，由树脂构成的树脂被膜浸渍于镀浴中。 由于树脂涂层的体积电阻率高，因此由于第一金属和第二金属之间的电势差，首先在树脂涂层的表面上发生置换涂层反应，并形成替代涂层。 结果，将导电性赋予制品的整个表面，并且在置换镀膜的表面上形成均匀且致密的电镀膜。 可以根据目的适当地设置电镀膜的厚度，但是当制品是稀土永磁体时，据说可以确保磁体的有效体积，并且表现出优异的耐腐蚀性。 从观点来看，电镀膜的厚度优选为10m至30m。\n\n  【0045】例如，当在一个镀浴中在稀土结合磁体的表面上形成替代Ni镀膜和电Ni镀膜时，根据磁体的形状使用各种镀浴。 能够。 作为镀浴，可以使用瓦特浴，氨基磺酸浴，木材浴等公知的镀浴。 为了在由分散有第一金属的粉末的树脂制成的非导电涂层的表面上形成具有优异粘附性的置换镀镍膜，例如，使用低镍高硫酸盐浴。  1期望抑制金属与镍之间的过度替代效率（替代Ni镀膜的沉积率）。 合适的低镍高硫酸盐浴为5水合硫酸镍100克/升至70克ZL，硫酸钠160克ZL至270克/升，氯化铵8克 浸浴由ZL〜l 8 g / L和硼酸13 g ZL S 3 g / L组成。 期望电镀浴的pH为4.0至8.0。 如果小于4.0，则可能对在酸性条件下不稳定的稀土类池塘磁铁产生不利影响，而如果超过8.0，则形成的置换Ni镀膜的密合性可能变差。 因为有。 此外，当镀浴的pH设置为4.0至8.0时，具有比Ni低的碱电势的第一金属被快速洗脱以形成粗糙的替代Ni镀膜。 目的还在于有效地防止对与在表面上形成的电Ni镀膜的粘附的不利影响。 电镀浴的浴温度优选为30：至70。 在30°C以下形成的取代基\n\n 这是因为Ni镀膜的表面可能是粗糙的，但是如果超过70℃，则难以控制浴温，并且可能无法形成均匀的置换Ni镀膜。 当使用这样的镀浴形成替代Ni镀膜之后形成电Ni镀膜时，电流密度为0.2A / dm2至20AZdm2。 希望这样做。 如果小于0.2 AZdm2，则成膜速度可能变慢，生产率可能变差；而如果大于2 OA / dm2，则形成的Ni Ni镀膜的表面可能会劣化。 这是因为它变得粗糙并且可能会出现许多针孔。 尽管将电解Ni板用作阳极，但是期望使用含有S的镍片作为电解Ni板，以稳定Ni的洗脱。\n\n  【0046】例如，即使在一个镀浴中在稀土类粘结磁铁的表面上形成替代Sn镀膜和电Sn镀膜时，根据磁铁的形状，也可以使用各种镀浴。 它可以。 期望镀浴的pH为3.5至9.0。 如果小于3.5，则可能会对在酸性条件下不稳定的稀土池磁体产生不利影响，而如果大于9.0，则形成的镀锡涂层的附着力可能较差。 因为有。 镀浴的浴温应为15°C至35°C。 如果温度低于15℃，则形成的用于替代Sn镀的Sn膜的表面可能是粗糙的，而如果超过35℃，则难以控制熔池温度并且不能形成均匀位移的Sn镀膜。 因为有恐惧。 当使用这种制革浴形成置换式Sn镀膜后形成Sn镀膜时，电流密度为0.18（11112至5。OAZdm2。 如果小于0.1 AZdm2，则沉积速率可能会变慢并且生产率可能会降低；而如果大于5.0 AZdm2，则会形成镀锡的电沉积 这是因为涂层的表面变得粗糙并且可能出现许多针孔。\n\n  【0047】例如，即使在一个镀浴中在稀土结合磁体的表面上形成替代Cu镀膜和电Cu镀膜的情况下，取决于磁体的形状，也可以使用各种镀浴。 它可以。 期望镀浴的pH为5.0至8.5。 如果小于5.0，则可能对在酸性条件下不稳定的稀土池磁体产生不良影响，而如果超过8.5，则形成的置换Cu镀膜的密合性可能变差。 因为有。 电镀浴的浴温为25°C〜\n\n 70℃是理想的。 如果小于25，则形成的Cu膜的表面有时会变得粗糙，而如果超过70℃，则难以控制浴温，有时无法形成均一的Cu膜。 因为有。 在使用这种鞣制浴形成置换型Cu镀膜后，形成Cu电镀膜时，电流密度应为0. lAZdm2至5. OAZdm2。 是可取的。 如果小于0.1AZdm2，则成膜速度慢，生产率降低；另一方面，如果大于5.0AZdm2，则形成的电镀铜膜的表面变粗糙。 这是因为可能会出现大量针孔。 镀浴优选为中性Cu镀浴，其对稀土池磁体具有低腐蚀性和渗透性，并且特别地，以硫酸铜，乙二胺四乙酸和亚硫酸钠为主要成分的中性Cu-EDT。 浴是优选的。\n\n  【0048】当通过本发明的方法在环形池形磁体的表面上形成电镀膜时，可能存在在内表面上产生局部凸部的情况。 当用作由分散有第一金属的粉末的树脂制成的非导电涂层的主要成分的树脂的硬度低时，通常会出现这种现象。 用作导电涂层主要成分的树脂具有较高的硬度，特别是固化后的洛氏硬度为M 80或更高的树脂，例如酚醛树脂（Ml 10），环氧树脂（M80）， 期望使用丙烯酸树脂（M80），聚酯树脂（M80），聚酰亚胺树脂（Ml 28）等。 特别地，在这些树脂中，以聚酰亚胺树脂为代表的耐热热固性树脂，即所谓的超级工程塑料，即使在对磁体施加热量和负荷时也使树脂部分软化。 有效地，已经被树脂分散的第一金属的粉末获得了结合性能，结果，体积电阻率降低并且非导电膜的特性劣化。 更理想的是，其具有防止功能，同时具有对非导电膜赋予耐热性的功能。 当混合使用多种树脂时，优选组合使用各树脂，以使混合树脂自身的固化树脂具有M80以上。 例如，环氧树脂和聚酰亚胺树脂的混合树脂在固化时，其洛氏硬度为M80以上，相容性优异。 \n\n另外，如上所述，因为其具有优异的金属粉末分散性和优异的耐热性，所以是理想的混合树脂。 另外，添加到镀浴中以形成电镀膜的增白剂，例如，基于糖精的增白剂，例如芳族磺酰胺和芳族磺酰亚胺，以及2-丁炔-1，4-二醇等。 通过调节丁炔二醇类增亮剂的添加量，可以减轻层叠在非导电膜表面上的涂膜的应力，从而避免局部突起的发生。\n\n  【0049】此外，可以在如上所述形成的电镀膜上层压另一电镀膜等。 通过采用这种构造，可以增强/补充诸如耐腐蚀性和产品的机械强度之类的特性，并且可以增加其他功能。\n\n  【0050】在应用了本发明的稀土类永磁体中，池塘磁铁是磁性各向同性的池塘磁铁，只要其主要包含磁性粉末和树脂粘合剂即可。 也可能是磁性各向异性池塘磁铁。 此外，除了通过与树脂粘合剂粘合而形成的粘合剂之外，还可以使用通过与金属粘合剂或无机粘合剂粘合而形成的粘合剂。 此外，粘合剂可包含填料。\n\n  【0051】作为稀土类粘结磁体，已知各种组成和晶体结构，所有这些都是本发明的主题。\n\n  【0052】例如，如JP-A-9-152515中所述的各向异性R_F e 1 B系统磅磁体，如JP-A-8-203714中所述的软磁相（ 例如，具有a-Fe或Fe3B）和硬磁相（Nd2Fe14B）的Nd-Fe-B纳米复合磁体，过去已被广泛使用。 可以提及使用通过体淬火法制备的各向同性的Nd_Fe-B基磁体粉末（例如，商品名：MQP-B * MQI Co.，Ltd.）的粘结磁体。\n\n  【0053】另外，在日本特开平5-82041号公报中，（Fe i—XRX）x_yNy（0.07）  ≤x≤0、3、0.00 l≤y≤0.2。2）射频e-N系统磅磁铁。\n\n  【0054】另外，构成稀土类池塘磁铁的磁粉是熔融的稀土类永久磁铁合金。\n\n 然后，使用熔融粉碎法将制造后的粉末粉碎，将烧结磁铁制成后将其粉碎，直接还原扩散法通过Ca还原直接获得磁性粉，以及熔融喷射法 得到稀土永磁合金的带状箔，用淬火合金法对其进行粉碎和精制，将稀土永磁合金熔化，雾化并进行热处理，将原料雾化，将原料金属粉化 此后，可以通过诸如机械合金化方法的方法获得，其中通过机械合金化将粉末粉碎并进行热处理。\n\n  【0055】另外，构成R-Fe-N系磅磁铁的磁粉是将稀土类永磁体合金粉末化并在氮气或氨气中氮化而成的细粉状的气体。 也可以通过氮化法等方法获得。\n\n  本发明的效果根据构成稀土类永磁体的磁粉的组成，晶体结构，各向异性的有无等而不同。 因此，不管稀土类永磁体是池塘磁体还是烧结磁体，都可以获得预期的效果，但是该效果对于粘结磁体特别有用。\n\n  【0057】此外，当本发明应用于通过使用诸如厌氧性粘合剂的粘合剂将多个稀土类永磁体层叠而成的层叠磁体时，还包括磁体之间的粘合剂厚度部分。 可以在层叠磁体的整个表面上形成电镀膜。 因此，可以防止引起粘合力下降的物质（例如水）进入磁体和粘合剂之间的粘合界面，从而可以获得防止粘合力下降的效果。\n\n  【0058】此外，环状稀土类磅磁铁通过将其结合到用于安装在汽车等中的液体燃料（汽油，轻油，液体石油气等）的液体泵的电动机中来使用。 使用的环境可以在液体燃料的存在下，但是在形成由树脂制成的，其中第一金属的粉末分散在表面上的非导电膜之后，将非导电膜形成磁体放置在第一金属上。 通过浸入含有贵金属第二离子的溶液中，在非导电膜的表面上形成具有第二金属的镀膜，并且在具有置换金属膜的表面上形成具有第三金属的电镀膜。 这样，可以赋予环状稀土类粘结磁铁优异的耐液体燃料的耐久性。 在这种情况下，合适的第三种金属包括镍和锡，它们对液体燃料具有很高的耐腐蚀性。\n\n 例\n\n  【0059】将通过以下实验更详细地描述本发明，但是本发明不限于以下描述。\n\n  【0060】实验A（在环形稀土池磁体的表面上形成电镀膜）\n\n  【0061】将环氧树脂涂覆到通过淬火合金法制成的平均长轴为150 m的合金粉末上，其组成为Nd：12 at％，F e：77 at％，B：6 at％，Co：5 at％。 通过添加2wt％并捏合，在686 NZmm2的压力下压缩成型，然后在150°C的温度下固化1小时，制备出外径为3 OmmX，内径为28mmX，长度为4mm的环形磅磁体。 以下，使用磁体试验片进行以下实验。\n\n  【0062】示例1：\n\n  【0063】作为非导电性锌粉分散树脂的Eporoval（商品名，由Rhobar Co.制造：主要是平均粒径为4zm的氧化锌粉和固化后的洛氏硬度为M 80的环氧树脂） 用Epolo-Ibaru专用稀释剂（Rhobar的商品名）（重量比Eporoval：稀释剂= 1：0.5）稀释非导电锌粉并均匀搅拌。 制备分散树脂溶液。 将得到的溶液放入枪口径为1.5mm的气柱中。 使用层压装置以0.2MPa的喷涂压力喷涂磁体测试件的整个表面并喷涂后，在室温（20°C）下干燥60分钟并在200°C下干燥。 在C中烘烤30分钟后，非导电涂层（体积电阻率3Χ105Ω·cm：JIS：  —根据H0505）在磁体测试件的表面上形成。 在具有分散有锌粉的树脂制的非导电性涂层的磁铁试验片上，进行了在35℃下喷雾5重量％的盐溶液的盐雾试验。 没有观察到变化的磁体测试件（n = 50）。\n\n  【0064】将具有分散有25片锌粉的树脂制成的具有非导电涂层的磁体测试件与容量为2.8 L的直径为4 mm的氧化铝介质以及2.0 mm的氧化铝介质一起放入桶形罐中。 将其以6 OH z的频率进行桶式抛光30分钟。 超声波水清洗带有非导电涂层的磁铁试件，然后将其进行滚桶抛光3分钟。\n\n 之后，其包含240gZL的五水合硫酸镍，45g的五水合氯化镍和35gZL的硼酸，并且用碳酸镍将pH调节至4.2。 将磁体测试片浸入浴中，并且在不施加电压的情况下在非导电膜的表面上形成替代Ni镀膜30分钟。 此时，从加热浴中取出25个磁体试验片中的5个，检查形成的置换Ni镀膜的厚度。平均值为1m（荧光X射线）。 通过观察）。\n\n  【0065】然后通过施加电压以1.5 AZdm2的电流密度对剩余的20个磁体测试片进行90分钟的电镍电镀，并涂覆替代的镍镀膜。 在表面上形成电镍镀膜。\n\n  【0066】将如上所述获得的在最外表面具有电Ni镀膜的磁体试验片用超声波水洗涤3分钟，然后在10O下干燥60分钟。\n\n  【0067】用放大镜（X4）目视检查20个磁体测试件的最外表面上的电镍镀膜，未发现有带有针孔，突起或异物粘附的缺陷产品。 所有均为均质膜，被评价为良品。 由于在非导电膜的表面上形成的Ni镀膜的总厚度的平均值（n = 5）为25（通过荧光X射线观察），因此，电Ni镀膜的平均膜厚度为 发现值（n = 5）为24 ^ m。\n\n  【0068】在温度为6 Ot：x和相对湿度为90％的条件下，在最外表面具有电镍镀膜的15个磁体测试件上进行了500小时的耐腐蚀性测试。 结果，在任何磁体测试片中均未发现外观异常，例如膜膨胀或局部突起。\n\n  【0069】比较例1：\n\n  【0070】重量百分比为75％的锌粉，平均粒径为4 m，二甲苯百分比为22％，Epomic（三井化学的产品名称：1装环氧树脂，固化时洛氏硬度为M80）3％重量 混合并均匀搅拌以制备导电锌粉分散的树脂溶液。 使用喷枪直径为1.5 mm的空气喷涂装置，在0.2 MPa的喷涂压力下将所得溶液喷涂到磁体样品的整个表面上，并在室温下喷涂（20 在60°C干燥60分钟并在200°C烘烤30分钟后，膜厚为15 / m\n\n 在磁体测试件的表面上形成导电涂层（表面观察）（体积电阻率5×10-χΩ·cm：根据J I S-H0 505）。 通过在35℃下喷雾5重量％的盐水溶液，进行由分散有锌粉的树脂制的导电性涂层的磁铁喷雾试验，在500小时后进行盐雾试验。 有两个磁体标本（n = 50）。\n\n  【0071】示例2： \n\n【0072】使用与实施例1相同的非导电性锌粉分散树脂溶液，并且遵循与实施例1相同的步骤。 获得具有膜的磁体测试件。 将具有非导电涂层的机筒抛光磁体测试片用超声波水洗涤3分钟后，将该磁体测试片浸入与实施例1相同的浴中。 与实施例1不同，实施例2从开始浸入120分钟起以1.5AZdm2的电流密度进行镍电镀，并且在最外表面进行镍电镀。 形成膜。\n\n  【0073】将如上所述获得的在最外表面具有电Ni镀膜的磁体试验片用超声波水洗涤3分钟，然后在100℃下干燥60分钟。\n\n  【0074】用放大镜（X4）目视检查20个磁体测试件的最外表面上的电Ni镀膜，未发现有带有针孔，突起或异物附着的缺陷产品。 所有均为均质膜，被评价为良品。 在非导电膜的表面上形成的Ni镀膜的总厚度的平均值（n ＝ 5）为25m（通过荧光X射线观察）。 在实施例2中，不能测量在非导电膜的表面上形成的替代Ni镀膜的厚度，但是在最外表面上形成如上所述的高质量的Ni Ni镀膜的事实是这样的。 推测这是由于以下事实：在表面上形成了替代Ni镀膜，并且赋予了整个表面导电性。\n\n  【0075】在最外表面具有电镍镀膜的15个磁体试验片上进行了耐腐蚀性试验，将其在60°C的高温高湿和90％相对湿度的条件下放置500小时。 结果，在任何磁体测试片中都没有发现外观异常，例如涂层溶胀或局部突起。\n\n  【0076】比较例2：\n\n  【0077】第10号Eshathat EMC（Ohashi\n\n Gaku Kogyo的商品名：镍粉平均粒径为5 m，主要由丙烯酸树脂组成，硬化后的洛氏硬度为M 80。 用（大桥桥化学工业株式会社的商品名）（重量比Ereshut：稀释剂= 1：0.5）稀释后，通过均匀搅拌来制备导电性镍粉分散树脂溶液。 使用喷枪直径为1.5mm的喷雾器，在0.2MPa的喷雾压力的条件下，将得到的溶液喷雾到磁体试验片的整个表面上，进行喷雾涂布后，保持在室温（20℃）。 干燥60分钟并在200℃下烘烤30分钟后，形成导电涂层（体积电阻率为2X10-  1）Q * cm：根据JIS-H0505）在磁体测试件的表面上形成。\n\n  【0078】通过与实施例1相同的步骤，获得具有由树脂制成的导电涂层的磁体试验片，其中分散有桶抛光的镍粉，并且获得了涂覆有桶的导电涂层。 用超声波对磁体试验片进行3分钟的超声波清洗后，将磁体试验片浸入与实施例1相同的浴中，从开始浸入开始施加1.5AZ dm2的电流密度。 在上述条件下，进行镍电镀120分钟以在最外表面上形成镍电镀膜。\n\n  【0079】将如上所述获得的在最表面具有电Ni镀膜的磁体试验片用水超声清洗3分钟，然后在100℃下干燥60分钟。\n\n  【0080】用放大镜（X 4）对20个磁体试验片的最外表面上的电镍镀膜进行了目视检查，并且确认没有针孔，突起或异物附着在任何膜上。 观察到其中之一并且镀层的不均匀性很大，并且全部被评价为次品。 形成在导电膜表面上的Ni镀膜的总厚度的平均值（n ＝ 5）为25m（通过荧光X射线观察）。 上述结果表明，在比较例2中，由于在电Ni镀膜下未形成替代Ni镀膜，因此提供了足以形成良好的电Ni镀膜的导电性。 据推测，这是由于未能这样做。\n\n  【0081】在最外表面具有电镍镀膜的15个磁体试验片上进行了耐腐蚀性试验，将其在60℃的高温和高温以及90％的相对湿度的条件下放置500小时。 然而，发现任何磁体测试件都具有膨胀或局部突出。\n\n 零件等异常外观。\n\n  【0082】示例3：\n\n  【0083】Ereshat No.10 EMC（导电性镍粉分散树脂）（平均粒径为5的镍粉和固化时洛氏硬度为M80的丙烯酸树脂） 它与503号Suncoat（长岛特殊涂料有限公司的商品名：主要由固化时洛氏硬度为M 80的环氧树脂组成）一起使用。 用5600号稀释（大桥化学工业有限公司的商品名）（按重量比Ereshat：Suncoat：稀释剂= 1：0.2：0.5）混合树脂本身的洛氏硬度为M80  ），然后添加0.5重量％的Disparlon＃2150（Ku本化成株式会社的商品名：阴离子分散介质），并且将混合物均匀地搅拌以制备非导电性的Nigel粉末分散树脂溶液。 使用喷枪直径为1.5mm的空气喷雾器，在0.2MPa的喷雾压力的条件下，将获得的溶液喷雾到磁体试验片的整个表面上。  ）60分钟，并在200℃下烘烤30分钟，以获得具有15μm的膜厚度（根据横截面观察）的具有55重量％的镍粉分散体的非导电涂层（体积电阻率4 XI）。  04Ω·cm：根据JI S-H05.05）在磁体测试件的表面上形成。\n\n  【0084】通过与实施例1相同的步骤，获得了具有由树脂制成的非导电涂层的磁体试验片，其中分散有桶抛光的镍粉。 用保护层超声冲洗磁体测试件3分钟后，硫酸铜5水合物25 gZL，乙二胺四乙酸二钠55 gZL，酒石酸钠二水合物28.2 g / L， 将磁体试验片浸入含有71 g / L硫酸钠，25.2 g ZL亚硫酸钠的Cu镀浴中，并在40的液体温度下用氢氧化钠将pH调节至6.8，并施加电压30分钟。 不涂布而在非导电膜的表面上形成取代Cu镀膜。 此时，从Cu镀浴中取出25个磁体试验片中的5个，检查形成的置换Cu镀膜的膜厚，其平均值为2（荧光）。  X射线观察）。\n\n  【0085】然后通过施加电压以替换Cu镀膜，以1.5 AZ dm2的电流密度在Cu上电镀剩余的20个磁体测试件90分钟。\n\n 在表面上形成电镀铜膜。\n\n  【0086】将如上所述获得的在最表面具有Cu镀膜的磁体试验片用超声波水洗涤3分钟，然后在100℃下干燥60分钟。\n\n  【0087】用放大镜（X4）检查了20个磁体试验片的电镀Cu膜的最表面，未发现附着有针孔，突起或异物的不良品。 被评估为具有均匀涂层的无缺陷产品。 由于在非导电膜的表面上形成的Cu镀膜的总厚度（n ＝ 5）的平均值为24 / m（根据X射线荧光观察），因此，电Cu镀膜的平均厚度为2μm。 值（n == 5）为22 m。\n\n  【0088】在最外表面具有电镀铜膜的15个磁体样品上进行了耐腐蚀性测试，将其在90％和90％相对湿度的高温高湿条件下放置500小时。 结果，所有磁体测试片均略微变色为褐色，但未发现热点，涂层溶胀或局部凸出。\n\n  【0089】示例4：\n\n  【0090】以与实施例1相同的方式进行了滚筒抛光的具有非导电涂层的磁体试验片，进行超声波清洗3分钟，然后添加五水合硫酸镍133gZL，硫酸。 浸入213 gZL的钠，13 g / L的氯化铵，18 gZL的硼酸，然后将磁体测试件浸入低镍高硫酸盐浴中，该溶液的液体温度为50，用氢氧化钠调节至pH 5.8。 在不施加电压30分钟的情况下（通过荧光X射线观察）在非导电膜的表面上形成厚度为1m的替代Ni镀膜。 之后，施加电压以在1.5 AZ dm2的电流密度的条件下进行90分钟的电Ni电镀处理，以在替代Ni镀膜的表面上形成膜厚为24的电Ni镀膜。  （通过荧光X射线观察）。\n\n  【0091】将如上所述获得的在最外表面具有电Ni镀膜的磁体试验片用超声波水洗涤3分钟，然后在100℃下干燥60分钟。 用放大镜（X4）对磁体试验片的外表面进行目视检查时，未发现针孔，突起或异物附着等异常。 此外，在最外表面具有电镍镀膜的磁体试验片在温度为60℃，相对湿度为90％的高温高湿条件下进行了500小时的耐腐蚀性试验，\n\n 没有发现外观异常，例如涂层溶胀和局部凸起。 此外，通过使其在最外表面上具有电Ni镀膜的磁体测试片在120个热板上静置3分钟来进行热冲击测试。 由于对镀膜的粘附性差，未发现异常外观。 范例5： \n\n【0092】作为非导电性锌粉分散树脂的Eporoval（Roval Co.的商品名：主要是平均粒径为4 zm的氧化锌粉，固化后的洛氏硬度为M 80的环氧树脂） 用BAN I（丸善石油化学株式会社的商品名：固化时洛氏硬度为Ml 28的聚酰亚胺树脂）和Eporoval专用稀释剂（Rover Co.的商品名）稀释 比例的EPOROVAL：BAN I：稀释剂＝ 1：0.2：0.5 Z固化后的混合树脂本身的洛氏硬度为M90），通过均匀搅拌来制备非导电性锌粉分散树脂溶液。 做到了。 使用喷枪直径为1.5 mm的空气喷涂设备，在0.2 MPa的喷涂压力，喷涂漆，然后在室温下的条件下，将所得溶液喷涂到磁体测试件的整个表面上。 干燥（20℃）60分钟，再于200℃烘烤30分钟，膜厚为10μm的非导电涂层（根据横截面观察），锌粉分散体为77％（重量）。 在磁体测试片的表面上形成2×106Q * cm的体积电阻率：根据JIS-H0505）。\n\n  【0093】具有与实施例1相同的方式，对具有由分散有锌粉的架子形成的非导电性涂层的磁体试验片进行了抛光。 将已经进行了滚筒抛光的具有非导电涂层的磁体测试件用水超声清洗3分钟，然后执行与示例1相同的步骤，并对非导电涂层表面进行厚度为1μm的置换Ni镀层。 形成膜，并且在替换的Ni镀膜的表面上进一步形成膜厚为24 / m的电Ni镀膜（通过荧光X射线观察）。\n\n  【0094】将如上所述获得的在最外表面具有电Ni镀膜的磁体试验片用水超声清洗3分钟，然后在100℃下干燥60分钟。 用放大镜（X4）对磁体试验片的外表面进行目视检查时，未发现针孔，突起或异物附着等异常。 另外，在该最外表面具有电Ni镀膜的磁体试验片上，施加60℃×相对湿度的温度。\n\n 在90％的高温高湿条件下进行500小时的耐腐蚀性试验时，未发现涂层溶胀，局部凸部等异常外观。 此外，当在其最外表面具有电Ni镀膜的磁体测试片上进行热冲击测试时，使该测试片在12 Ot的热板上静置3分钟。 由于与镍镀膜的粘附性差，未发现异常外观。 此外，在最外表面具有电Ni镀膜的磁体试验片（以下称为样品）上进行以下试验，作为汽油耐久性试验。 将三个样品放在内部容积为5 OmL的耐压气密容器中，并与12 mL市售的常规汽油一起，盖紧盖子。 之后，将该耐压气密容器放入温水浴（恒温水槽）中，在80℃下保持2小时（由于汽油的蒸气压，容器的内部压力为约300kPa）。 从水浴中取出密闭容器并在大气中保持12小时的操作被定义为1个循环，并且在进行5个循环，15个循环，30个循环和50个循环的该操作之后，执行样品的尺寸改变。  （外径，内径和高度），重量变化和径向抗压强度（当通过从垂直于环中心线的方向施加载荷而使环断裂时的重量）被检查。 结果，即使在上述操作的50个循环之后，样品也没有在任何评价项目中显示出任何特别的变化，并且显示出优异的耐汽油耐久性。 尽管磁性能稍有下降，但是对于实际使用来说并不是问题。 当对磁体试验片本身进行上述汽油耐久性试验时，由于汽油引起的树脂粘合剂的溶胀，磁体试验片的尺寸显着增加。\n\n  【0095】示例6：\n\n  【0096】以与实施例5相同的方式进行了滚筒抛光的具有非导电涂层的磁体试验片，用水超声清洗3分钟，然后进行与实施例4相同的步骤，以获得非导电材料。 在导电涂膜的表面上形成厚度为1m的替代Ni镀膜，并且在替代Ni镀膜的表面上进一步形成厚度为24m的电Ni镀膜（通过荧光X射线观察）。 将如上所述获得的在最外表面具有电Ni镀膜的磁体试验片用水超声清洗3分钟，然后在100℃下干燥60分钟。 用放大镜（X 4）检查磁体试验片最外表面上的电镍镀膜的外观\n\n 未发现异常现象，例如孔，突起或异物。 另外，当对在最外表面具有电镍镀膜的磁体试验片进行耐腐蚀性试验时，将其在温度为60℃，相对湿度为90％的高温高湿条件下放置500小时， 没有发现外观异常，如薄膜膨胀和局部凸出。 此外，当在其最外表面上具有电Ni镀膜的磁体测试片上进行热冲击测试时，使该测试片在120英寸的热板上静置3分钟。 由于与镀膜的粘合性差，未发现异常外观实验B（在透明丙烯酸板表面上形成镀膜）\n\n  【0097】一个小型振动桶（Chipton\'s VM-10），带有5个60 mm x 20 m mx x 2 mm厚度的透明丙烯酸板和2 L氧化铝介质。\n\n  装入【0098】（Chipton制造：PSc /）4），将透明丙烯酸板的表面研磨30分钟。 接着，将表面抛光的透明丙烯酸板浸入丙酮中1分钟以使表面脱脂，然后自然干燥。\n\n  【0099】将Eporobal（商品名：Rhobaru Co.，Ltd。制造：铅粉的平均粒径为4 / m）用作非导电性锌粉分散树脂。 用（公司的商品名）（重量比：Ephalo：稀释剂= 1：0.7）稀释后，通过均匀搅拌来制备非导电性锌粉分散树脂溶液。 使用喷枪口径为1.2 mm的空气喷涂装置，在0.2 MPa的喷涂压力条件下，将所得溶液喷涂在透明丙烯酸板的整个表面上，并在室温（20°C）下喷涂。  C）60分钟，然后在200°C下烘烤30分钟，然后制成非导电涂层（体积电阻率为2X 10  5Q·cm：根据JIS-H0505，在透明丙烯酸板的表面上形成。\n\n  【0100】小振动筒（Tipton Co.，Ltd。制造的VM-10）与5块透明丙烯酸板一起使用，在步骤1所得的表面上形成了非导电涂层，氧化铝介质2 L 加载Chipton Corp.：PS＜i)4），并且将非导电涂层的表面抛光30分钟。\n\n  【0101】具有非导电涂层的已被表面抛光的透明丙烯酸板是五水合硫酸镍五水合物240 gZL，五水合氯化镍五水合物45 gZL，硼酸35 gZL。\n\n 通过将其浸没在55℃的液体温度的瓦特浴中，在其中不施加电压30分钟的情况下，在非导电膜的表面上形成替代的Ni镀膜，其中用碱性碳酸镍将pH调节至4.2。 此时，从瓦特浴中取出5块透明丙烯酸板中的2块，检查形成的置换Ni镀膜的厚度，平均值为1（通过横截面观察）。  .. 如此形成的替代Ni镀膜表现出作为金属Ni的表面纹理并且具有5×10-6Ω·cm的体积电阻率。 因此，发现即使在该阶段，出于赋予抗静电目的而赋予装饰性和表面导电性的目的，也实际上是令人满意的。\n\n  【0102】然后，通过施加电压，以1.5 AZdm2的电流密度对剩余的三块透明丙烯酸板进行90分钟的电镍电镀。 在其上形成电镍镀膜。\n\n  【0103】将如上所述获得的在最外表面具有电镍镀膜的透明丙烯酸板用水超声清洗3分钟，然后在100℃下干燥60分钟。\n\n  【0104】用放大镜（X4）目视检查了三个透明丙烯酸板的最外层镍电镀膜，未发现有针孔，突起或异物粘附的缺陷产品。 被评估为具有均匀涂层的无缺陷产品。 在非导电膜的表面上形成的Ni镀膜的总厚度（n ＝ 3）的平均值为25m（根据截面观察）。 发现（n ＝ 3）为24m。\n\n  【0105】实验C（在木制吉祥物蝙蝠的表面上形成电镀膜）\n\n  【0106】以与实验B中相同的方式，在其表面上形成具有长度为24 Omm x直径为约1 Omm的木质吉祥物袋，其具有均匀且致密的电Ni镀膜，具有优异的粘附性。\n\n  【0107】实验D（Danpole纸表面上的电镀膜的形成）\n\n  【0108】对于6 Omm x 20 mm x 2 mm厚的阻尼孔纸，与实验B相同（但是，省略了使用小振动筒的两个表面抛光步骤）。 形成致密的电镍镀膜。\n\n  【0109】实验E（在透明玻璃板表面上形成电镀膜）\n\n  【0110】6毫米x 20毫米x 2毫米透明玻璃板与实验B相同\n\n 然后，在表面上形成具有均匀附着力的均匀且致密的电Ni镀膜。\n\n  【0111】实验F（在铝板表面上形成电镀膜）\n\n  【0112】与实验B同样，在长60mm×宽20mm×厚2mm的铝板上，以均匀且致密的电Ni镀膜被覆，且密合性优异。 形成。\n\n  【0113】实验G（镁合金板表面上的电镀膜的形成）\n\n  【0114】具有6Omm×20mm的宽度和2mm的厚度的镁合金板，以与实验B相同的方式在其表面上具有均匀且致密的电Ni镀膜，并且具有优异的粘附性。 形成。 工业可用性\n\n  【0115】根据本发明，提供了一种在不依赖于制品的表面材料或表面性质的情况下，在制品的表面上形成具有优异粘附性的均匀且致密的电镀膜的方法。');
INSERT INTO `os_patent_instruction_text` VALUES (12963, 22792, 'TECHNICAL FIELD\n\n[0001]The present invention relates to a method for forming a uniform and dense electroplating film with high adhesion strength on the surface of an article, yet irrespective of the surface material and the surface properties of the article.\n\nBACKGROUND ART\n\n[0002]In order to impart properties such as decorative properties, anti-weathering properties, surface conductivity for antistatic purposes and the like, electromagnetic shielding properties, antibiotic functions, and shock resistance, to articles, metallic films have been formed on the surface of the articles heretofore. Metallic films can be formed by various methods; among them, methods for forming electroplating films by means of electroplating processes are widely employed in practice because they are also suitable for mass production.\n\n[0003]However, in order to form electroplating films on the surface of articles, it is required that the surface of the articles possesses electric conductivity. Hence, electroplating films cannot be directly formed on the surface of an article made of a non-conductive material such as plastics, wood, papers, glass, ceramics, rubbers, and concrete. Furthermore, there are cases in which metallic films are required to be formed on the surface of an article made of a metallic material such as magnesium, aluminum, and titanium, (e.g., housings of cellular phones, laptop personal computers, etc.), however, for example, magnesium is one of the most base metals. Thus, in case an attempt is made to form an electroplating film on the surface of such an article, an abrupt substitution plating reaction occurs at the instant of immersing the article in the plating bath, and this makes the formation of high quality electroplating films unfeasible. Aluminum and titanium are metals that are easily oxidized, and in general, the surface of such metals is covered with extremely dense metal oxide films. Accordingly, although these metals are lower in ionization tendency, the surface potential is elevated to make an electroplating treatment difficult. While it is possible to form electroplating films by removing the metal oxide films from the surface, a special etching technology is needed, and there still remain practical problems due to time constraints, because an electroplating process should be carried out before the metal oxide film is formed again after removing the metal oxide films. Furthermore, there may be employed a method of performing an electroplating process comprising, carrying out the so-called zincate treatment for forming a zinc substituted plating film, while simultaneously applying etching, under a strong alkaline environment by immersing the article in a solution containing sodium hydroxide and zinc hydroxide, and then carrying out the step of forming an electroless plating film, and then carrying out the electroplating process. However, this makes the entire process complicated.\n\n[0004]Furthermore, in case of forming a uniform electroplating film on the surface of an article having pores, fine grooves, or irregularities on the surface thereof, such as wooden bats, bricks, die-castings, and the like, there remain problems to be solved; considerations should be made on not only how to impart electric conductivity to the surface of the article, but also how to ensure surface smoothness of the article.\n\n[0005]Moreover, a corrosion of an article may occur on carrying out an electroplating process in case of an article made of a highly corrosive material such as metallic magnesium; hence, difficulties are found on forming electroplating films on such articles.\n\n[0006]In case of solving the above problems by means of known technologies, there may be employed a method as disclosed in Japanese Patent Laid-Open No. 210183/1986, comprising forming, on the surface of the article, a resin coating made of a resin containing dispersed therein a metallic powder, and then forming an electroless plating film on the surface of the resin coating; an electroplating film can be formed on the thus formed surface of the electroless plating film. However, since an electroless plating film is formed by reacting reducing agents to metallic ions in the plating solution and obtaining metal precipitates as a consequence on the surface of plated articles, not only the adhesiveness to the plated object, but also the film deposition efficiency are poor. Although the film deposition efficiency can be increased by methods using palladium catalysts or platinum catalysts, these methods inevitably increase costs. Furthermore, there is no denying that impurities contained in an electroless plating film and originated from the reducing agents provide negative influences on the formation of electroplating films on the surface of the electroless plating film.\n\n[0007]Accordingly, an object of the invention is to provide a method for forming a uniform and dense electroplating film with high adhesion strength on the surface of an article, yet irrespective of the surface material and the surface properties of the article.\n\nDISCLOSURE OF THE INVENTION\n\n[0008]In the light of the aforementioned circumstances, the present inventors accomplished the invention as a result of extensive studies; thus, a first method for forming an electroplating film on the surface of an article according to the present invention comprises: forming on the surface of the article, a resin coating made of a resin containing dispersed therein a powder of a first metal; then forming a second-metal substituted plating film on the surface of the resin coating by immersing the resin-coated article in a solution containing ions of a second metal having an ionization potential nobler than that of the first metal; and further forming an electroplating film of a third metal on the surface of the metal-substituted plating film.\n\n[0009]In accordance with a second formation method, there is disclosed the first method, wherein the resin coating is a non-conductive coating.\n\n[0010]According to a third formation method, there is disclosed the second method, wherein the article is a rare earth permanent magnet.\n\n[0011]Furthermore, according to a fourth formation method, there is disclosed the third method, wherein the rare earth permanent magnet is a bonded magnet.\n\n[0012]According to a fifth formation method, there is disclosed the second method, wherein the volume resistivity of the non-conductive coating is 1×104 Ω·cm or higher.\n\n[0013]In accordance with a sixth formation method, there is disclosed the first method, wherein the powder of the first metal is dispersed in the resin coating at a content in a range of from 50 wt % to 99 wt %.\n\n[0014]According to a seventh formation method, there is disclosed the first method, wherein the average particle diameter of the powder of the first metal is in a range of from 0.001 μm to 30 μm.\n\n[0015]In accordance with an eighth formation method, there is disclosed the first method, wherein the film thickness of the resin coating is in a range of from 1 μm to 100 μm.\n\n[0016]According to a ninth formation method, there is disclosed the first method, wherein the first metal is zinc and the second metal is nickel or tin.\n\n[0017]According to a tenth formation method, there is disclosed the first method, wherein the first metal is nickel and the second metal is copper.\n\n[0018]According to an eleventh formation method, there is disclosed the first method, wherein the second metal and the third metal are the same.\n\n[0019]According to a twelfth formation method, there is disclosed the eleventh method, wherein the step of forming the substituted plating film and the step of forming the electroplating film are carried out in the same plating bath.\n\n[0020]In accordance with a thirteenth formation method, there is disclosed the first method, wherein the film thickness of the substituted plating film is in a range of from 0.05 μm to 2 μm.\n\n[0021]An article according to the invention is characterized by having an electroplating film formed on the surface thereof by the method for forming an electroplating film as recited in the first method.\n\n[0022]A method for forming a substituted plating film on the surface of an article according to the invention is characterized by that it comprises: forming on the surface of the article, a resin coating made of a resin containing dispersed therein a powder of a first metal, and then forming a second-metal substituted plating film on the surface of the resin coating by immersing the resin-coated article in a solution containing ions of a second metal having an ionization potential nobler than that of the first metal.\n\n[0023]An article according to the invention is characterized by having a substituted plating film formed on the surface thereof by the method for forming a substituted plating film as recited directly above.\n\n[0024]A rare earth permanent magnet having an electroplating film on the surface thereof according to the invention is characterized by produced by forming a non-conductive coating on the surface of a rare earth permanent magnet using a resin containing dispersed therein a powder of a first metal; then forming a second-metal substituted plating film on the surface of the non-conductive coating by immersing the magnet having formed thereon the non-conductive coating in a solution containing ions of a second metal having an ionization potential nobler than that of the first metal; and further forming an electroplating film of a third metal on the surface of the metal-substituted plating film.\n\n[0025]A rare earth permanent magnet having an electroplating film on the surface thereof according to the invention is characterized by that it comprises, formed on the surface of a rare earth permanent magnet, a non-conductive coating made of a resin containing dispersed therein a powder of a first metal, and having further thereon an electroplating film of a third metal, with a substituted plating film of a second metal that is nobler than the first metal interposed between them.\n\n[0026]A rare earth permanent magnet having a substituted plating film on the surface thereof according to the invention is characterized by that it comprises, formed on the surface of a rare earth permanent magnet, a non-conductive coating made of a resin containing dispersed therein a powder of a first metal, and having further thereon a substituted plating film of a second metal that is nobler than the first metal.\n\n[0027]A rare earth permanent magnet having a non-conductive coating on the surface thereof according to the invention is characterized by that it comprises, formed on the surface of a rare earth permanent magnet, a non-conductive coating made of a resin containing dispersed therein a powder of a first metal.\n\nBEST MODE FOR CARRYING OUT THE INVENTION\n\n[0028]The method for forming an electroplating film on the surface of an article according to the invention is characterized by that it comprises: forming on the surface of the article, a resin coating made of a resin containing dispersed therein a powder of a first metal; then forming a second-metal substituted plating film on the surface of the resin coating by immersing the resin-coated article in a solution containing ions of a second metal having an ionization potential nobler than that of the first metal; and further forming an electroplating film of a third metal on the surface of the metal-substituted plating film.\n\n[0029]In the method for forming an electroplating film on the surface of an article according to the invention, a resin coating made of a resin containing dispersed therein a powder of a first metal is formed on the surface of an article, and then, a second-metal substituted plating film having high adhesion strength is formed on the entire surface of the resin coating by utilizing a substitution plating reaction which is initiated from the powder of the first metal that is present on the surface of the resin coating or in the vicinity thereof. In this manner, as a result, electric conductivity is imparted to the entire surface of the article, and a uniform and dense electroplating film of the third metal can be formed with high adhesion strength on the surface of the substituted plating film. Accordingly, a uniform and dense electroplating film can be formed with high adhesion strength on the surface of the article made of any type of material, such as plastics, wood, papers, glass, ceramics, rubbers, and concrete, yet irrespective of the surface material and the surface properties of the article.\n\n[0030]The method for forming an electroplating film on the surface of an article according to the invention is explained step by step below.\n\nStep 1:\n\n[0031]Firstly, a resin coating made of a resin containing dispersed therein a powder of a first metal is formed on the surface of an article. As the resin for use as the base of the resin coating, there can be mentioned, for example, a thermosetting resin. More specifically, there can be mentioned, for instance, phenolic resin, epoxy resin, melamine resin, acrylic resin, polyester resin, urethane resin, polyimide resin, styrene-acrylic resin, and mixed resins thereof.\n\n[0032]There is no particular limitation concerning the kinds of the powder of the first metal to be dispersed in the resin coating, however, in order to initiate the substitution plating reaction in the later step, it is essential that the potential of the first metal is lower than that of the second metal. Accordingly, the first metal should be properly selected by taking the potential difference between the first and the second metals into consideration. As a specific example of the combination of the first and the second metals, there can be mentioned a combination using zinc as the first metal and nickel or tin as the second metal, or a combination using nickel as the first metal and copper as the second metal.\n\n[0033]The resin coating made of a resin containing dispersed therein the powder of the first metal may be an electrically conductive coating or a non-conductive coating, however, a non-conductive coating is preferred for a resin coating that is formed on the surface of an article made of a highly corrosive material such as metallic magnesium, or for a resin coating that is formed on the surface of a highly corrosive rare earth permanent magnet, which is to be stated hereinafter. Even in case the surface of the resin coating should be corroded on carrying out a substituted plating process or an electroplating process, or in case the surface of the resin coating should be corroded through the defects such as pinholes, and flaws, which are generated in the electroplating films formed on the substituted plating film provided on the surface of the resin coating, further progress of the corrosion through the interior of the resin coating to the surface of the article can be prevented from occurring.\n\n[0034]Rare earth permanent magnets such as R—Fe—B based permanent magnets, which are represented by a Nd—Fe—B based permanent magnet, are now utilized in various fields because of their high magnetic properties, and because of their allowing use of low cost materials abundant in resources.\n\n[0035]Recently, in the electronic industries and in the electric appliance industries where rare earth permanent magnets are used, more compact components are used and further down sizing is under way. Accordingly, more compact magnets or magnets with more complicated shapes are demanded.\n\n[0036]From this point of view, bonded magnets based mainly on magnetic powder and resin binders, which are easily tailored into desired shapes, are attracting attention, and are brought into practical use in various fields.\n\n[0037]Rare earth permanent magnets contain R (rare earth element), which is easily oxidized and corroded in air. Thus, in case they are used without applying surface treatment, the corrosion proceeds from the surface due to the effect of acids, alkalis, water, and the like that are slightly present in air, and rust generates as a result. This causes deterioration or fluctuation in magnetic properties. Moreover, in case magnets having rust generated thereon are assembled in devices such as magnetic circuits, it is feared that rust is scattered to contaminate peripheral components.\n\n[0038]In order to overcome the problems above, attempts are made to form electroplating films on the surface of magnets as anticorrosive films. However, in case an attempt is made to form the electroplating film directly on the surface of the bonded magnet, a uniform and dense film is unfeasible, because the magnetic powder constituting the surface of the magnet, which is insulated by the resin binder, or the resin part interposed among such magnetic powder has low conductivity. As a result, pinholes (non-plated parts) generate to induce rust generation.\n\n[0039]In the light of such circumstances, as a method of forming an electroplating film after imparting electric conductivity to the entire surface of the bonded magnet, there is proposed, for instance, in Japanese Patent No. 2719658 (Japanese Patent Laid-Open No. 276095/1992), a method comprising coating the surface of the bonded magnet with a mixture of a resin and a powder of an electrically conductive material to form an electrically conductive resin coating, and then applying electroplating. However, when viewed microscopically, this method fails to impart sufficiently high electric conductivity to the entire surface of the resin. Thus, it is impossible to completely eliminate parts of low electric conductivity from the surface. As a result, there occurs a problem that a uniform and dense electroplating film cannot be formed. Further problem is that, since the resin coating formed on the surface of the magnet is electrically conductive, if the surface of the resin coating should be corroded at the time of carrying out the electroplating process and the like, the corrosion proceeds through the electrically conductive part of the interior of the coating to the surface of the magnet.\n\n[0040]The patent above also proposes a method comprising carrying out the electroplating process after applying electroless plating to the surface of the bonded magnet. According to this method, however, water that is used as the solvent for the processing solution or various components contained in the processing solution remain in the pores and the like of the magnet when an electroless plating or the like is applied, and these occasionally cause the corrosion of the magnet, as to make the adhesiveness of the film thus obtained to the surface of the magnet yet insufficient.\n\n[0041]Accordingly, it can be understood that satisfactory results are not yet achieved by the methods proposed heretofore, and novel methods for forming electroplating films on the surface of bonded magnets are keenly demanded. The present invention enables the formation of a uniform and dense electroplating film with high adhesion strength on the surface of bonded magnets, and by providing resin coating on the surface of the bonded magnet as a non-conductive coating, an excellent corrosion resistance can be imparted to the bonded magnet.\n\n[0042]The non-conductive coating made of a resin containing dispersed therein a powder of a first metal can be obtained, for instance, by spray-coating the surface of the article with the non-conductive resin itself, in which the powder of the first metal is dispersed, or, if necessary, with a processing solution prepared by diluting the resin with an organic solvent, or, by performing immersion coating, in which the article is immersed in the processing solution and then by drying them. Such a non-conductive resin containing dispersed therein the metallic powder are easily obtained, since some of them are commercially available. Furthermore, an electrically conductive resin dispersed therein a powder of a first metal may be rendered a non-conductive processing solution by adding organic dispersants, such that the metallic powder is uniformly dispersed and isolated. In such a case, preferable organic dispersants for use from the viewpoint of affinity with the metallic powder and cost are, for example, anionic dispersants (e.g., aliphatic polycarboxylic acids, polyether polyester carboxylates, high molecular polyester acid polyamine salts, high molecular weight polycarboxylic acid long chain amine salts, and the like), nonionic dispersants (e.g., polyoxyethylene alkyl ether, carboxylic acid salts such as sorbitan ester, sulfonic acid salts, ammonium salts, and the like), high molecular dispersants (e.g., carboxylic acid salts, sulfonic acid salts, ammonium salts of water-soluble epoxy and the like, styrene-acrylic acid copolymer, glue, and the like). Furthermore, so long as the processing solution is capable of forming non-conductive coatings, the solution itself may be electrically conductive. On preparing the processing solution, a disperser such as a ball mill, an attritor, and a sand mill, may be used properly.\n\n[0043]In order to form a substituted plating film on the entire surface of the resin coating by initiating the substitution plating reaction from the metallic powder contained in the resin coating, the metallic powder should be present uniformly and abundantly on the surface of the resin coating or in the vicinity thereof. From this point of view, the processing solution is preferably prepared as such that the metallic powder should be dispersed in the resin coating at an amount of 50 wt % or more. The upper limit of the amount of the metallic powder dispersion in the resin coating is not limited, however, in general, it is difficult to prepare a processing solution for forming a resin coating containing dispersed therein the metallic powder at a concentration exceeding 99 wt % (since there occurs problems such as the coagulation and settling of the metallic powder in the processing solution, or the difficulty in handling due to an increase in viscosity of the processing solution). Accordingly, from the viewpoint of the production, the upper limit of the amount of the metallic powder dispersion in the resin coating is 99 wt %.\n\n[0044]In order to prepare a processing solution containing uniformly dispersed therein the metallic powder, the average particle diameter of the metallic powder is preferably in a range of from 0.001 μm to 30 μm, more preferably, from 0.01 μm to 12 μm, and further preferably, from 2 μm to 10 μm.\n\n[0045]In case the resin coating made of the resin containing dispersed therein the powder of the first metal thus formed is non-conductive, the non-conductive coating prevents corrosion from proceeding deeply through the interior of the coating to reach the surface of the article, even in case the surface of the coating is corroded. Thus, the resin coating exerts an effect of imparting corrosion resistance to the article. It is believed that the self-repairing function (i.e., by generating corrosion compounds of the first metal (in case the first metal is zinc, the compounds are, for example, ZnCl2.4Zn(OH)2, and ZnO,), or by swelling the resin and thereby increasing the volume of the resin coating, such that the coating itself should exhibit function of burying defects, such as pinholes and flaws) of the coating, as well as the sacrificial anticorrosion function of the first metal, contributes to the aforementioned effect. In order to further ensure this effect, the volume resistivity of the non-conductive coating is preferably set to 1×104 Ω·cm or higher. The organic dispersant above may be added to the processing solution as to suppress the coagulation and settling of the metallic powder from occurring in the processing solution, thereby improving the dispersibility of the metallic powder and increasing the volume resistivity. In case the article is a rare earth permanent magnet, the magnet having provided with a non-conductive coating of high volume resistivity on the surface thereof produces less eddy current in the magnet when assembled in a motor. This is a valuable effect in the point that the loss in motor efficiency is suppressed because thermal demagnetization due to the heat generated by eddy current is reduced. The value is further enhanced in case such magnets are assembled inside the motor in a multiply laminated structure.\n\n[0046]In order to sufficiently exhibit the effect above, and to form a uniform substituted plating film on the entire surface of the resin coating by rendering a smooth surface to the resin coating and providing the metallic powder uniformly and abundantly on the surface of the resin coating and in the vicinity thereof, the resin coating is preferably provided at a film thickness in a range of from 1 μm to 100 μm. However, in case the film thickness of the resin coating is increased, there may be cases in which the resin coating unfavorably influences the formation of a uniform electroplating film. In case the article is a rare earth permanent magnet, accordingly, by taking the point above and the effective volume of the magnet into consideration, the upper limit of the film thickness of the resin coating is preferably 30 μm.\n\n[0047]Furthermore, in order to improve the adhesiveness of the surface of the article with the resin coating at the interface, known cleaning methods such as degreasing of the surface of the article or barrel polishing for imparting anchoring effect may be performed prior to the process for forming the resin coating made of the resin containing dispersed the rein the powder of the first metal.\n\nStep 2:\n\n[0048]Then, a second-metal substituted plating film is formed on the surface of the resin coating by immersing the resin-coated article obtained in step 1 in a solution containing ions of a second metal having an ionization potential nobler than that of the first metal. The second-metal substituted plating film not only has the function of imparting electric conductivity to the entire surface of the article, but also contributes to improve the surface cleanliness of the article by preventing dropping out of the first metallic powder particles from occurring on the resin coating. This step can be carried out in accordance with an ordinary method for forming a substituted plating film, however, from the viewpoint of assuring sufficiently high conductivity for forming a uniform and dense electroplating film of the third metal in the later processes, it is preferred to form a film having a film thickness of 0.05 μm or thicker. Prior to forming the substituted plating film, in order to obtain a smooth surface on the resin coating and to expose an active surface of the powder of the first metal uniformly dispersed in the resin coating, barrel polishing may be applied to the article having a resin coating formed on the surface thereof. The upper limit of the film thickness of the substituted plating film is not particularly limited, however, in view of production cost, the film thickness is preferably set to 2 μm or less. To achieve the object of imparting decorative properties, surface conductivity for antistatic purposes, and the like, to articles, the product obtained at this step with substituted plating film formed on the surface thereof sufficiently fulfills the effect at a practically satisfactory level.\n\nStep 3:\n\n[0049]Finally, an electroplating film of the third metal is formed on the surface of the substituted plating film obtained in step 2. This step can be carried out in accordance with a known method for forming an electroplating film. As described above, the combination of the first and the second metals must be selected by taking the difference in potential of the metals into consideration; however, there is no particular constraints concerning the relation between the third and the second metals, and usable as the third metal are those generally used for electroplating films, such as Ni, Cu, Sn, Co, Zn, Cr, Ag, Au, Pb and Pt. Accordingly, the same metal may be used as the second and the third metals without any problem.\n\n[0050]In case the same metal is used for the second and the third metals, that is, in case the metal constituting the substituted plating film is used for the electroplating film, a single plating bath can be conveniently employed for both step 2 for forming the substituted plating film and step 3 for forming the electroplating film. More specifically, for example, at the instance the article having the resin coating made of the resin containing dispersed therein the powder of the first metal on the surface thereof is immersed in the plating bath, a substituted plating film is formed by allowing a substitution plating reaction to proceed without applying any voltage, and then, the electroplating film can be formed by applying voltage. Furthermore, even in case voltage is applied at the instance the article having the resin coating made of the resin containing dispersed therein the powder of the first metal on the surface thereof is immersed in the plating bath, a substituted plating film is formed on the surface of the resin coating at first by the substitution plating reaction that occurs according to the potential difference between the first and the second metals, because the volume resistivity of the resin coating is high at the initial stage of immersion. Thus, as a result, electric conductivity is imparted to the entire surface of the article as to form a uniform and dense electroplating film on the surface of the substituted plating film. The film thickness of the electroplating film can be properly set according to purposes. However, from the viewpoint of assuring the effective volume of the magnet while imparting excellent corrosion resistance in case the article is a rare earth permanent magnet, it is preferred that the electroplating film is formed at a film thickness in a range of from 10 μm to 30 μm.\n\n[0051]For instance, in case of forming a Ni substituted plating film and a Ni electroplating film on the surface of a rare earth bonded magnet by using a single plating bath, various types of plating baths may be used depending on the shape of the magnet. As the plating bath, there can be used known plating baths such as Watt\'s bath, sulfamic acid bath, and Wood\'s bath. In order to form a Ni substituted plating film with high adhesion strength on the surface of a non-conductive coating made of a resin containing dispersed therein the powder of the first metal, for instance, a low-nickel high-sulfate bath is preferably used to suppress excessive conversion efficiency (film formation rate of a Ni substituted plating film) between the first metal and nickel. As a preferred low-nickel high-sulfate bath, there can be mentioned a plating bath containing 100 g/L to 170 g/L of nickel sulfate pentahydrate, 160 g/L to 270 g/L of sodium sulfate, 8 g/L to 18 g/L of ammonium chloride, and 13 g/L to 23 g/L of boric acid. The pH value of the plating bath is preferably set in a range of from 4.0 to 8.0. In case pH is lower than 4.0, there is fear of causing negative influences on rare earth bonded magnets that are unstable under acidic conditions; in case pH exceeds 8.0, on the other hand, it is feared that the adhesion strength of the thus generated Ni substituted plating film results low. Furthermore, by setting the pH of the plating bath in a range of from 4.0 to 8.0, it can also achieve the object of effectively suppressing the negative influences on the adhesion strength to the Ni electroplating film which is formed on the surface of a Ni substituted plating film, when a coarse and rough Ni substituted plating film is formed, due to an abrupt elution of the first metal having a potential lower than Ni. The bath temperature of the plating bath is preferably set in a range of from 30° C. to 70° C. In case the temperature is lower than 30° C., the Ni substituted plating film may result in a coarse and rough surface; on the other hand, in case the temperature exceeds 70° C., temperature control of the bath becomes difficult as to make the formation of a uniform Ni substituted plating film unfeasible. On forming a Ni electroplating film after forming the Ni substituted plating film by using the plating bath above, the electric current density is preferably set in a range of from 0.2 A/dm2 to 20 A/dm2. In case the current density is lower than 0.2 A/dm2, the film deposition rate becomes too low to result in an inferior productivity; on the other hand, in case the current density exceeds 20 A/dm2, numerous pinholes may form due to the coarsening and roughening of the surface of the Ni electroplating film. An electrolytic Ni', '技术领域\n\n[0001]本发明涉及一种在物品表面上具有高粘合强度的均匀和致密电镀膜的方法,但不论物品的表面材料和表面性质如何。\n\n背景技术\n\n[0002]为了赋予装饰性质,抗风化性能,抗静电性能,抗静电般的目的,电磁屏蔽性能,抗生素函数和抗冲击性,对制品进行抗衡腐性,抗腐蚀性,抗生素函数和抗冲伤性,已经在迄今为止的文章的表面上形成了金属薄膜。金属膜可以通过各种方法形成;其中,通过电镀工艺形成电镀膜的方法在实践中广泛采用,因为它们也适用于大规模生产。\n\n[0003]然而,为了在制品表面上形成电镀膜,需要制品的表面具有电导率。因此,电镀薄膜不能直接形成在由非导电材料,如塑料,木材,纸张,玻璃,陶瓷,橡胶和混凝土之类的非导电材料制成的表面上。此外,存在需要在由金属材料制成的物品的表面上形成金属膜的情况,例如镁,铝和钛,(例如,蜂窝电话的外壳,笔记本电脑个人电脑等),然而,例如,镁是最碱性金属之一。因此,如果尝试在这种物品的表面上形成电镀膜,则在浸入电镀浴中的制品的速溶中发生突然的替代电镀反应,这使得形成高质量的电镀薄膜不可行。铝和钛是金属易氧化,通常,这种金属的表面覆盖有极致密的金属氧化物膜。因此,虽然这些金属在电离倾向下较低,但是表面电位升高以使电镀处理困难。虽然通过从表面除去金属氧化物膜可以形成电镀膜,但需要一种特殊的蚀刻技术,并且由于时间限制仍然存在实际问题,因为电镀过程应在金属氧化物膜之前进行去除金属氧化物膜后再次形成。此外,可以使用进行电镀方法的方法,所述电镀方法包括用于通过将制品浸入含钠的溶液中同时在强碱环境中同时施加蚀刻的所谓锌酸锌处理。氢氧化物和氢氧化锌,然后执行形成化学镀膜的步骤,然后进行电镀过程。但是,这使得整个过程复杂。\n\n[0004]此外,如果在其表面上形成毛孔的制品的表面上形成均匀的电镀薄膜,例如木蝙蝠,砖,压铸等,则存在仍有问题;应考虑不仅如何赋予物品表面的电导率,而且如何确保物品的表面光滑度。\n\n[0005]此外,在进行由诸如金属镁的高腐蚀性材料制成的物品的情况下,可以发生制品的腐蚀。因此,在这种制品上形成电镀膜是难以找到的。\n\n[0006]在通过已知技术解决上述问题的情况下,可以使用如日本专利公开No.210183/1986中公开的方法,包括在制品的表面上形成由树脂制成的树脂涂层含有分散在其中的金属粉末,然后在树脂涂层的表面上形成无电镀膜;可以在由此形成的化学镀膜的表面上形成电镀膜。然而,由于通过在电镀溶液中的金属离子与金属离子反应并在电镀制品的表面上获得金属沉淀物来形成化学镀膜,而不仅仅是镀覆物体的粘合性,而且是薄膜沉积效率较差的。尽管可以通过使用钯催化剂或铂催化剂的方法来增加膜沉积效率,但这些方法不可避免地增加成本。此外,否否否定包含在化学镀膜中并源自还原剂的杂质提供对化学镀膜表面上的电镀膜的形成产生负面影响。\n\n[0007]因此,本发明的目的是提供一种用于在物品表面上具有高粘合强度的均匀和致密电镀膜的方法,但与物品的表面材料和表面性质无关。\n\n发明内容\n\n[0008]鉴于上述情况,本发明人由于广泛的研究而完成了本发明;因此,在根据本发明的制品的表面上形成电镀膜的第一方法包括:在制品的表面上形成,由含有分散在其中的粉末的树脂制成的树脂涂层;然后通过将树脂涂覆的物品浸入含有离子化势粗的离子的溶液中,在树脂涂层的表面的表面上形成二金属取代的电镀膜,其具有比第一金属的离子化势粗糙的溶液;并进一步在金属取代电镀膜的表面上形成第三金属的电镀膜。\n\n[0009]根据第二形成方法,公开了第一方法,其中树脂涂层是非导电涂层。\n\n[0010]根据第三形成方法,公开了第二种方法,其中制品是稀土永磁体。\n\n[0011]此外,根据第四形成方法,公开了第三种方法,其中稀土永磁体是粘合磁体。\n\n[0012]根据第五形成方法,公开了第二种方法,其中非导电涂层的体积电阻率为1×104 ω·cm或更高。\n\n[0013]根据第六形成方法,公开了第一方法,其中第一金属的粉末在树脂涂层中以50wt%至99wt%的范围分散在树脂涂层中。\n\n[0014]根据第七种形成方法,公开了第一方法,其中第一金属的粉末的平均粒径在0.001μm至30μm的范围内。\n\n[0015]根据第八形成方法,公开了第一方法,其中树脂涂层的膜厚度为1μm至100μm。\n\n[0016]根据第九形成方法,公开了第一方法,其中第一金属是锌,第二金属是镍或锡。\n\n[0017]根据第十形成方法,公开了第一方法,其中第一金属是镍,第二金属是铜。\n\n[0018]根据第十一形成方法,公开了第一方法,其中第二金属和第三金属是相同的。\n\n[0019]根据第十二形成方法,公开了第十一方法,其中形成取代的电镀膜的步骤和形成电镀膜的步骤在相同的电镀浴中进行。\n\n[0020]根据第十三形成方法,公开了第一方法,其中取代镀膜的膜厚度为0.05μm至2μm。\n\n[0021]根据本发明的制品的特征在于通过在第一方法中召开的方法具有形成电镀膜的方法在其表面上形成电镀膜。\n\n[0022]在根据本发明的制品表面上形成取代的电镀膜的方法的特征在于,它包括:在制品的表面上形成,由含有分散在其中的粉末的树脂制成的树脂涂层,然后通过将树脂涂覆的物品浸入含有离子化势高于第一金属的离子的离子的离子的溶液中,在树脂涂层的表面上形成第二金属取代镀膜。\n\n[0023]根据本发明的制品的特征在于通过在其表面上形成在其表面上形成取代的电镀膜如上叙述的方法。\n\n[0024]通过使用含有第一金属粉末的树脂在稀土永磁体的表面上形成非导电涂层,通过在稀土永磁体上形成非导电涂层来制备具有电镀膜的稀土永磁体。然后通过将在其上形成的磁体沉浸在含有电离电位高尚的离子的离子的溶液中,在没有导电涂层的溶液中形成二金属取代的镀膜。 ;并进一步在金属取代电镀膜的表面上形成第三金属的电镀膜。\n\n[0025]根据本发明的具有在其表面上具有电镀膜的稀土永磁体的特征在于,它包括形成在稀土永磁体的表面上,由含有分散在其中的粉末的树脂制成的非导电涂层第一金属,并且在其上进一步具有第三金属的电镀膜,具有比在它们之间插入的第一金属更清晰的第二金属的取代镀膜。\n\n[0026]在根据本发明的表面上具有取代的电镀膜的稀土永磁体的特征在于,它包括形成在稀土永磁体的表面上,由含有分散在其中的粉末的树脂制成的非导电涂层第一金属,并且在其上进一步具有比第一金属更清晰的第二金属的取代镀膜。\n\n[0027]根据本发明的具有在其表面上具有非导电涂层的稀土永磁体的特征在于,它包括形成在稀土永磁体的表面上,由含有分散在其中的树脂制成的非导电涂层第一金属的粉末。\n\n实施本发明的最佳方式\n\n[0028]在根据本发明的制品表面上形成电镀膜的方法的特征在于,它包括:在制品的表面上形成,由含有分散在其中的粉末的树脂制成的树脂涂层;然后通过将树脂涂覆的物品浸入含有离子化势粗的离子的溶液中,在树脂涂层的表面的表面上形成二金属取代的电镀膜,其具有比第一金属的离子化势粗糙的溶液;并进一步在金属取代电镀膜的表面上形成第三金属的电镀膜。\n\n[0029]在根据本发明的制品表面上形成电镀膜的方法中,在物品的表面上形成由分散在其中的粉末的树脂制成的树脂涂层,然后是第二次通过利用从存在于树脂涂层表面或其附近的第一金属的粉末引发的替代镀层反应,在树脂涂层的整个表面上形成具有高粘合强度的金属取代镀膜。以这种方式,结果,赋予制品的整个表面的导电率,并且可以在取代电镀膜的表面上具有高粘合强度的第三金属的均匀和致密的电镀膜。因此,可以在由任何类型的材料制成的物品表面上具有高粘合强度的均匀和致密的电镀膜,例如塑料,木材,纸张,玻璃,陶瓷,橡胶和混凝土,但与表面无关物质和物品的表面性质。\n\n[0030]在下一步骤下,解释了在根据本发明的制品的表面上形成电镀膜的方法。\n\n步骤1:\n\n[0031]首先,在物品的表面上形成由分散在其中的含有第一金属粉末的树脂制成的树脂涂层。作为用作树脂涂层底部的树脂,可以提及例如热固性树脂。更具体地,可以提及,例如,酚醛树脂,环氧树脂,三聚氰胺树脂,丙烯酸树脂,聚酯树脂,聚氨酯树脂,聚酰亚胺树脂,苯乙烯 - 丙烯酸树脂及其混合树脂。\n\n[0032]关于在树脂涂层中分散在树脂涂层中的第一金属的粉末种类没有特别限制,以便在后面的步骤中开始取代电镀反应,所以第一金属的电位是较低的比第二金属。因此,通过考虑第一和第二金属之间的电位差,应选择第一金属。作为第一和第二金属组合的具体实例,可以提及使用锌作为第一金属和镍或锡作为第二金属的组合,或者使用镍作为第一金属和铜的组合作为第二金属和铜金属。\n\n[0033]由其中的含有分散在其中的树脂制成的树脂涂层可以是导电涂层或非导电涂层,但是,对于形成在表面的表面上形成的树脂涂层是优选的非导电涂层由诸如金属镁的高腐蚀性材料制成的物品,或用于形成在高度腐蚀性稀土永磁体的表面上的树脂涂层,其在下文中将说明。即使在进行取代的电镀工艺或电镀工艺的情况下,也应腐蚀树脂涂层的表面,或者在树脂涂层的表面应通过诸如针孔等缺陷的缺陷腐蚀在设置在树脂涂层表面上的取代电镀膜上形成的电镀膜,可以防止通过树脂涂层内部的腐蚀的进一步进展,从而发生在物品的表面上。\n\n[0034]稀土永磁体,如R-Fe-B基的永磁体,其由基于ND-Fe-B基的永磁体表示,现在是由于它们的高磁性,并且由于它们允许使用低电平而在各种领域中使用资源丰富的成本材料。\n\n[0035]最近,在电子工业和使用稀土永磁体的电器行业中,使用更紧凑的部件,并进一步下降尺寸。因此,需要更紧凑的磁体或具有更复杂形状的磁体。\n\n[0036]从这个角度来看,主要基于磁粉和树脂粘合剂的粘结磁铁,这些磁性粘合剂易于定制成所需形状,正在引起注意,并在各种领域进行实际应用。\n\n[0037]稀土永磁体含有R(稀土元素),其易于氧化和在空气中腐蚀。因此,如果在不施加表面处理的情况下使用它们,因此由于酸,碱,水等略微存在的酸,碱,水等而导致的表面从表面进行,并且由于结果而产生。这导致磁性变差或波动。此外,在诸如磁性电路的器件中的具有生锈的磁体中的磁体,担心锈蚀地散布到污染的外围部件。\n\n[0038]为了克服上述问题,尝试在磁铁表面上形成电镀薄膜作为防腐蚀膜。然而,在尝试直接在粘合磁体的表面形成电镀膜的情况下,均匀和致密的膜是不可行的,因为构成磁体的表面的磁粉,其由树脂粘合剂绝缘,或在这种磁粉中插入的树脂部分具有低导电性。结果,针孔(未镀件部分)产生诱导生锈产生。\n\n[0039]根据这种情况,作为在赋予粘合磁体的整个表面的电导率之后形成电镀膜的方法,提出了例如日本专利No.2719658(日本专利公开No.276095 / 1992),一种方法包括用树脂的混合物和导电材料的粉末涂覆粘合磁体的表面,以形成导电树脂涂层,然后施加电镀。然而,当显微镜上观察时,该方法不能赋予树脂的整个表面具有足够高的电导率。因此,不可能完全消除从表面的低电导率的部分。结果,存在不能形成均匀和致密的电镀膜的问题。进一步的问题是,由于在磁体的表面上形成的树脂涂层导电,如果在执行电镀过程等时应腐蚀树脂涂层等,因此腐蚀通过导电进行腐蚀涂层内部的一部分到磁体的表面。\n\n[0040]上面的专利还提出了一种方法,包括在将电镀电镀施加到粘合磁体的表面之后进行电镀工艺。然而,根据该方法,当施加无电镀等时,使用用作处理溶液的溶剂或包含在处理溶液中所含的各种组分的水,并且这些偶尔导致这些偶尔导致磁体的孔径等磁铁的腐蚀,以使如此获得的薄膜的粘合性在磁体的表面上尚不足。\n\n[0041]因此,可以理解,迄今为止所提出的方法尚未实现令人满意的结果,并且锐利地要求将用于在粘合磁体表面上形成电镀薄膜的新方法。本发明使得能够在粘合磁体表面上形成具有高粘合强度的均匀和致密的电镀膜,并且通过为非导电涂层提供粘合磁体的表面上的树脂涂层,可以赋予优异的耐腐蚀性到粘合磁铁。\n\n[0042]可以获得由含有第一金属粉末的含有分散在其中的树脂制成的非导电涂层,例如,通过用非导电树脂本身喷涂制品的表面,其中第一金属的粉末如果需要,通过用有机溶剂稀释树脂制备的加工溶液,或者通过进行浸渍涂层,其中制品浸入加工溶液中,然后通过干燥它们来制备加工溶液,然后通过干燥它们。这种含有分散在其中的非导电树脂易于获得金属粉末,因为它们中的一些是可商购的。此外,可以通过加入有机分散剂来使分散在其中的导电树脂是第一金属的粉末,使得金属粉末均匀地分散和分离。在这种情况下,从属于金属粉末的亲和力的观点出发,例如阴离子分散剂(例如,脂族多元羧酸,聚醚聚酯羧酸盐,高分子聚酯酸多胺盐,高分子量多元羧酸的观点来看,优选的有机分散剂酸长链胺盐等),非离子分散剂(例如,聚氧乙烯烷基醚,羧酸盐,如山梨糖醇酯,磺酸盐,铵盐等),高分子分散剂(例如,羧酸盐,磺酸盐,水溶性环氧树脂的铵盐等,苯乙烯 - 丙烯酸共聚物,胶等)。此外,只要加工解决方案能够形成非导电涂层,溶液本身就可以是导电的。在制备加工溶液上,可以适当地使用诸如球磨机,磨损器和砂磨机的分散器。\n\n[0043]为了通过从包含在树脂涂层中包含的金属粉末的替代镀层反应在树脂涂层的整个表面上形成取代的电镀膜,金属粉末应在树脂涂层的表面上均匀且大量存在其附近。从该观点来看,优选制备加工溶液,原制备,使得金属粉末应以50wt%或更多的量分散在树脂涂层中。树脂涂层中金属粉末分散体的量的上限不受限制,但通常,难以制备用于在其中含有分散在其中的树脂涂层的加工溶液,以浓度超过99wt%的金属粉末(由于存在诸如在加工溶液中的金属粉末的凝固和沉降等问题,或由于加工溶液的粘度的增加而难以处理)。因此,从生产的观点来看,树脂涂层中金属粉末分散体的量的上限为99wt%。\n\n[0044]为了制备含有均匀分散的加工溶液,金属粉末的平均粒径优选为0.001μm至30μm,更优选为0.01μm至12μm,进一步优选地,从2μm到10μm。\n\n[0045]在由此形成的第一金属的粉末制成的树脂涂层的情况下,非导电涂层防止腐蚀深度通过涂层内部进行腐蚀,以到达物品的表面,甚至在涂层的表面被腐蚀。因此,树脂涂层施加赋予制品腐蚀性的效果。据信,通过产生第一金属的腐蚀化合物的自修复功能(在第一金属是锌的情况下,化合物是例如ZnCl2.4zn(哦)2和ZnO,),或通过溶胀树脂,从而增加树脂涂层的体积,使得涂层本身应表现出涂层的掩埋缺陷和瑕疵的功能,以及牺牲防腐功能第一金属,有助于上述效果。为了进一步确保这种效果,不导电涂层的体积电阻率优选设定为1×104 ω·cm或更高。上面的有机分散剂可以加入到加工溶液中,以抑制金属粉末在加工溶液中发生的凝固和沉降,从而改善金属粉末的分散性并增加体积电阻率。在制品是稀土永磁体的情况下,在其表面上设置有大量电阻率的非导电涂层的磁体在电动机中组装时在磁体中产生较少的涡流。这是一种有价值的效果,即电动机效率的损失被抑制,因为由于涡流产生的热量而导致的热退磁。在倍增层叠结构中在电动机内部组装在电动机内部,该值进一步增强。\n\n[0046]为了充分地表现出上述效果,通过使光滑的表面涂布到树脂涂层上并在树脂涂层的表面上均匀地提供金属粉末,在树脂涂层的整个表面上形成均匀取代的电镀膜。在其附近,树脂涂层优选地设置在1μm至100μm的膜厚度。然而,在树脂涂层的膜厚增加的情况下,可能存在树脂涂层的情况下不利地影响均匀电镀膜的形成。在制品是稀土永磁体的情况下,因此,通过考虑上述点和磁体的有效体积,树脂涂层的膜厚度的上限优选为30μm。\n\n[0047]此外,为了在界面处用树脂涂层改善物品的表面的粘合性,可以在形成过程之前进行已知的清洁方法,例如用于赋予锚固效果的物品的表面或筒抛光的表面由含有分散的树脂制成的树脂涂层,该树脂搅拌了第一金属的粉末。\n\n第2步:\n\n[0048]然后,通过将步骤1中获得的树脂涂覆的物品浸入含有离子化电离势高于第一金属的离子的溶液中的溶液中,在树脂涂层的表面上形成第二金属取代镀膜。第二金属取代电镀膜不仅具有赋予制品的整个表面的电导率的功能,而且还有助于通过防止在树脂上发生排出第一金属粉末颗粒来改善制品的表面清洁度涂层。该步骤可以根据用于形成取代镀膜的普通方法进行,然而,从确保在后面的过程中形成均匀和致密的第三金属的致密电镀膜的足够高的导电膜的观点来看,优选形成薄膜厚度为0.05μm或更厚的薄膜。在形成取代的电镀膜之前,为了获得树脂涂层上的光滑表面并暴露在树脂涂层中均匀分散在树脂涂层中的第一金属的粉末的活性表面,可以将筒抛光施加到具有树脂的制品上在其表面上形成的涂层。取代电镀膜的膜厚度的上限没有特别限制,但考虑到生产成本,膜厚度优选设定为2μm或更小。为了实现赋予装饰性质的目的,对制品的抗静电目的而言,表面电导率等,在该步骤中用在其表面上形成的取代电镀膜获得的产物充分地满足了实际上令人满意的水平的效果。\n\n第3步:\n\n[0049]最后,在步骤2中获得的取代电镀膜的表面上形成第三金属的电镀膜。该步骤可以根据用于形成电镀膜的已知方法进行。如上所述,必须通过考虑金属潜力的差异来选择第一和第二金属的组合;然而,没有关于第三和第二金属之间的关系的特殊约束,并且作为第三金属可以使用的是,通常用于电镀薄膜,例如Ni,Cu,Sn,Co,Zn,Cr,Ag,Au, Pb和Pt。因此,可以在没有任何问题的情况下使用相同的金属作为第二和第三金属。\n\n[0050]在第二和第三金属使用相同的金属的情况下,即,在构成取代的电镀膜的金属用于电镀膜的情况下,可以方便地使用单个镀浴,用于形成替代的步骤2用于形成电镀膜的电镀膜和步骤3。更具体地,例如,在制品的实例中,该制品具有由分散在其中的树脂的树脂涂层制成的树脂涂层,其表面上的第一金属的粉末浸入电镀浴中,通过允许替代电镀来形成取代的电镀膜在不施加任何电压的情况下进行反应,然后,可以通过施加电压来形成电镀膜。此外,即使在将具有由分散在其中的树脂涂层制成的树脂涂层的实例中施加的情况下,其在其中的表面上的第一金属的粉末浸入电镀浴中,在表面上形成取代的电镀膜首先通过根据第一和第二金属之间的电位差异的替代电镀反应首先进行树脂涂层,因为树脂涂层的体积电阻率在浸渍的初始阶段高。因此,结果,在制品的整个表面上赋予导电率,以在取代电镀膜的表面上形成均匀和致密的电镀膜。电镀膜的膜厚度可以根据目的适当地设定。然而,从确保磁铁的有效体积的观点来看,在制品是稀土永磁体的情况下赋予优异的耐腐蚀性,优选在10μm的范围内形成电镀膜。 30μm。\n\n[0051]例如,在通过使用单个电镀浴在稀土键合磁体的表面上形成Ni取代的电镀膜和Ni电镀膜的情况下,可以根据磁体的形状使用各种类型的镀浴。作为电镀浴,可以使用已知的镀浴,如瓦特的浴,氨基磺酸浴和木浴。为了在具有在其中含有分散的树脂的非导电涂层的表面上形成具有高粘合强度的Ni取代的电镀膜,例如,优选使用低镍高硫酸盐浴抑制第一金属和镍之间的过量转化效率(Ni取代镀膜的膜形成率)。作为优选的低镍高硫酸盐浴,可以提及含有100g / L至170g / L硫酸镍五水合物的电镀浴,160g / L至270g / L硫酸钠,8g / L.氯化铵的18克/升氯化铵,13克/升至23克/升硼酸。镀浴的pH值优选设定在4.0至8.0的范围内。在pH值低于4.0的情况下,担心对酸性条件下不稳定的稀土键合磁体产生负面影响;另一方面,在pH超过8.0的情况下,令人担忧由此产生的Ni取代电镀膜的粘合强度低。此外,通过将电镀浴的pH设定在4.0至8.0的范围内,还可以实现有效地抑制对Ni被取代的Ni表面上形成的Ni电镀膜对粘合强度的负面影响的对象当形成粗糙和粗糙的Ni取代的电镀膜时,电镀膜由于第一金属的突然洗脱,其具有低于Ni的电位。镀浴的浴温优选设定在30℃至70℃的范围内。如果温度低于30℃,则Ni取代的电镀膜可能导致粗糙和粗糙的表面;另一方面,在温度超过70℃的情况下,浴的温度控制变得难以使形成均匀的Ni取代电镀膜不可行。在形成Ni替换膜后形成Ni电镀膜通过使用上方的电镀浴形成,电流密度优选设定在0.2a / dm的范围内2 到20个/ dm2。在电流密度低于0.2A / dm的情况下2,膜沉积速率变得太低,不能导致劣质的生产率;另一方面,在电流密度超过20 A / DM的情况下2由于Ni电镀膜的表面的粗化和粗糙化,可以形成许多针孔。用作阳极的电解Ni板,并且含有S的镍尖端优选用作电解Ni板以稳定Ni洗脱。\n\n[0052]例如,在通过使用单个电镀浴在稀土键合磁体的表面上形成Sn取代电镀膜和Sn电镀膜,例如,可以根据磁体的形状使用各种类型的镀浴。镀浴的pH值优选设定在3.5至9.0的范围内。在pH值低于3.5的情况下,担心在酸性条件下不稳定的稀土键合磁体导致负面影响;另一方面,在pH超过9.0的情况下,令人担忧由此产生的Sn取代电镀膜的粘合强度低。电镀浴的浴温优选设定在15℃至35℃的范围内。在温度低于15℃的情况下,Sn取代的电镀膜可能导致粗糙和粗糙的表面;另一方面,在温度超过35℃的情况下,浴的温度控制变得难以使形成均匀的Sn取代电镀膜不可行。通过使用上述镀镀浴形成Sn取代镀膜后形成Sn电镀膜,电流密度优选设定在0.1a / dm的范围内2 到5.0 A / DM2。在电流密度低于0.1A / dm的情况下2,膜沉积速率变得太低,不能导致劣质的生产率;另一方面,在电流密度超过5.0 / dm的情况下2,由于SN电镀膜的表面的粗化和粗糙化,可以形成许多针孔。\n\n[0053]而且,在通过使用单个电镀浴在稀土键合磁体的表面上形成Cu取代的电镀膜和Cu电镀膜的情况下,例如,可以根据磁铁的形状使用各种类型的电镀浴。电镀浴的pH值优选设定在5.0至8.5的范围内。在pH值低于5.0的情况下,担心对酸性条件下不稳定的稀土键合磁体产生负面影响;另一方面,在pH超过8.5的情况下,令人担心的是,如此产生的Cu取代的电镀膜的粘合强度低。镀浴的浴温优选设定在25℃至70℃的范围内。在温度低于25℃的情况下,Cu取代的电镀膜可能导致粗糙和粗糙的表面;另一方面,在温度超过70℃的情况下,浴的温度控制变得难以使形成均匀的Cu取代电镀膜不可行。在形成Cu代取代镀膜后形成Cu电镀膜通过使用上方的电镀浴,电流密度优选设定在0.1a / dm的范围内2 到5.0 A / DM2。在电流密度低于0.1A / dm的情况下2,膜沉积速率变得太低,不能导致劣质的生产率;另一方面,在电流密度超过5.0 / dm的情况下2,由于Cu电镀膜的表面的粗化和粗糙化,可以形成许多针孔。作为电镀浴,优选使用中性Cu电镀浴,其对稀土键合磁体较小,并且特别优选含有硫酸铜,乙二胺四乙酸和亚硫酸钠的中性Cu-EDTA浴。主要成分。\n\n[0054]在通过使用本发明的方法在环形粘合磁体的表面上形成电镀膜的情况下,可能发生突起在磁体的内表面上局部产生突起的情况。发现这种现象发生在树脂的硬度用作由含有分散的树脂的非导电涂层的底部,第一金属的粉末是低的。因此,为了避免这种现象发生,用作非导电涂层基部的树脂优选高于硬度;更具体地,优选使用能够在固化时产生M80或更高的罗克韦尔硬度的树脂,例如酚醛树脂(M110),环氧树脂(M80),丙烯酸树脂(M80),聚酯树脂(M80)和聚酰亚胺树脂(M128)。其中,特别是在由聚酰亚胺树脂代表的耐热热固性树脂的情况下,即所谓的超级工程塑料,这些树脂有效地用来防止特性的降解为来自发生的非导电涂层,这降低由于在树脂中分散在树脂中的第一金属的粉末即使在树脂部分由于施加到磁体上的热量和负载而使树脂部分经历的情况下,施加到磁体的粉末,因此发生了粘合效果。也就是说,从它们赋予非导电涂层的耐热性,更优选上述树脂。在混合物中使用多个树脂的情况下,优选将树脂组合,使得混合树脂在固化时产生M80或更高的罗克韦尔硬度。例如,环氧树脂和聚酰亚胺树脂的混合树脂在固化时产生M80或更高的罗克韦尔硬度,并且它不仅显示出优异的混溶性,而且还产生了金属粉末的优异分散性。因此,从优异的耐热性的观点出发,这种混合树脂也是优选的。此外,为了避免局部产生突起,可以通过调节增生剂的添加量,例如,基于糖精的增白剂,放松形成为层压的电镀膜的镀膜的应力可以放松。芳族磺酰胺和芳族磺酰亚胺,以及丁二醇基亮剂,例如2-丁炔-1,4-二醇,其在电镀浴中加入用于形成电镀膜。\n\n[0055]此外,其他电镀膜可以形成为上面形成的电镀膜上的层压材料。通过采用这种结构,可以增强或补偿耐腐蚀性和机械强度的制品的性质,或者可以赋予制品的附加功能。\n\n[0056]在稀土永磁体中作为施加本发明的制品,键合磁体可以是磁各向同性键合磁体或磁各向异性键合磁体,只要粘合磁体含有磁粉和树脂粘合剂作为主要成分。除了通过使用树脂粘合剂粘合和成形的磁体之外,通过使用金属粘合剂或无机粘合剂键合和成形的那些包括在上面的粘合磁体中。此外,粘合剂可以含有填料。\n\n[0057]在组合物和晶体结构中不同的稀土键合磁体是已知的,并且本发明适用于所有这些。\n\n[0058]例如,可以提及日本专利公开No.92515 / 1997中公开的各向异性R-Fe-B的粘合磁体,具有软磁相的ND-Fe-B基纳米复合磁体(例如,α-Fe和Fe.3b)和硬磁相(nd2Fe.14b)如日本专利公开No.203714/1996中所公开的,或使用由MQI公司生产的各向同性Nd-Fe-B磁粉(例如,MQI Corp生产的MQP-B(商品名)中的粘合磁铁。广泛使用的常规熔体淬火过程。\n\n[0059]进一步包括(Fe)表达的R-Fe-n键合磁铁中1-xR.x)1-yNy (0.07≤x≤0.3,0.001≤y≤0.2)),如日本专利公开号82041/1993所公开。\n\n[0060]构成稀土键合磁体的磁性粉末可以通过诸如溶解和研磨过程的方法获得,该方法包括熔化稀土永磁合金,使其成为铸造处理以产生铸锭,并粉碎铸锭;烧结 - 产品粉碎过程,包括产生烧结磁体,然后粉碎烧结磁体;通过CA降低直接产生磁性粉末的减少和扩散过程;一种快速凝固过程,包括通过熔化的射流射流制造稀土永磁合金的带箔,并粉碎和退火带箔;一种雾化过程,包括熔化稀土永磁合金,通过雾化粉末和使粉末合金进行热处理;和机械合金化方法,包括粉末粉末,使粉末金属精细地粉碎并使细粉碎的金属进行热处理等。\n\n[0061]此外,构成R-Fe-n键合磁体的磁性粉末可以通过气体氮化方法获得,该气体氮化方法包括粉碎稀土永磁合金,氮化气态氮气或气态氨中的粉碎合金,然后细化得到的合金。\n\n[0062]本发明的效果不依赖于构成稀土永磁体的磁性粉末的属性,例如组合物,晶体结构,无论是各向异性还是不等异。因此,可以获得稀土永磁体是粘结磁铁或烧结磁体的所需效果;然而,上述效果对于粘合磁体特别有利。\n\n[0063]如果本发明应用于通过使用诸如厌氧粘合剂的粘合剂层压多个稀土永磁体而获得的层叠磁体,可以在层叠磁体的整个表面上形成电镀膜,包括插入的粘合剂部分彼此磁铁。因此,本发明提供了粘附性降解预防效果,因为物质的侵入物质可以抑制在磁体和粘合剂之间的粘合界面处降低粘附(例如,水)。\n\n[0064]此外,环形稀土键合磁体有时在存在液体燃料的环境下使用;例如,它们有时组装在用于安装在汽车等上的液体燃料(例如汽油,轻质油,液化石油气等)的液体供给泵的电动机中。在这种情况下,通过首先在磁体的表面上首先形成液体燃料的优异耐用性,通过第一形成在磁体的表面上,由含有分散在其中的粉末的树脂制成的非导电涂层通过将涂覆有非导电涂层的溶液在含有离子化势粗糙的离子的离子的溶液中浸入涂有非导电涂层的溶液,在非导电涂层的表面上形成二金属取代电镀膜。第一金属,然后在取代电镀膜的表面上形成第三金属的电镀膜。在这种情况下,作为有利使用的第三金属是镍和锡,其对液体燃料具有高耐腐蚀性。\n\n例子\n\n[0065]下面通过参考下面的实验进一步详细描述本发明,但应该理解,本发明不限于此。\n\n实验A(在环形稀土键合磁体的表面上形成电镀膜)\n\n[0066]通过快速凝固过程制备由平均长轴直径为150μm的颗粒,含有12%的合金粉末,含有12%的颗粒,在0%Fe,6at %b,5at%Co.并用以2wt%的浓度加入环氧树脂捏合。将所得混合物在686n / mm的压力下进行压缩成型2,然后在150℃下固化1小时。因此,在外径的外径,内径为28mm的外径为30mm的环形键合磁体(以下称为“磁体试验片”),其长度为4mm,其进行以下实验。\n\n例1\n\n[0067]EPO ROVOROVOR(商品的ROVAL CORPORATION的商业名称;在固化时产生M80的罗克韦尔硬度,并且基于具有平均粒径为4μm的锌粉末的环氧树脂)用作含有非导电树脂分散在其中锌粉,并以1:0.5(EPO ROVORE:稀释剂)的重量比用EPO稀释剂(商业上可获得的roval Corporation的商业名称)稀释。通过均匀搅拌所得产物,得到含有分散在其中锌粉的非导电树脂溶液。由此获得的溶液用于喷涂磁体试验片的整个表面,通过操作配备有孔径为1.5mm的孔径为0.2MPa的孔径为1.5mm。因此,通过在常温(20℃)下干燥60分钟并在200℃下烘烤30分钟,不导电涂层(具有3×10的体积电阻率5 根据JIS-H0505标准方法测量的ω·cm),其含有96wt%的分散锌粉形成在磁体试验片的表面上的15μm的膜厚度下(通过观察横截面测量)。通过在35℃下在如此获得的磁体试验片上喷射5wt%的盐水进行盐水喷雾试验,其上具有由含有分散在其中的锌粉的树脂制成的非导电涂层。即使经过500小时后,也没有磁体试验片显示出外观的变化(n = 50)。\n\n[0068]其上具有由含有分散在其中的锌粉的树脂制成的二十五个磁体试验片在2.8L体积筒浴中加入2.0L直径的2.0L氧化铝介质中,并进行筒抛光在1.0 mm幅度和60 Hz频率的条件下30分钟。\n\n[0069]在使具有在其上形成的非导电涂层的磁体试验片进行到筒抛光之后,将它们与水进行超声冲洗3分钟,并将在55℃下浸入55℃下,在含有240g的瓦特浴中的电压浸入30分钟。 / L硫酸镍五水合物,45g / L氯化镍五水合物和35g / L的硼酸,通过使用碳酸镍调节至4.2的pH,从而形成非含量的Ni取代镀膜 - 导电涂层。在这种情况下,从瓦特的浴中拉出25个磁铁测试件中的5个,以研究如此形成的Ni取代电镀膜的膜厚度。发现平均膜厚度为1μm(通过使用荧光X射线光谱观察)。\n\n[0070]通过以1.5A / DM的电流施加电压,通过施加电压对磁铁测试件(20件)的其余部分进行NI电镀工艺2 在Ni取代电镀膜的表面上形成Ni电镀膜90分钟。\n\n[0071]将具有Ni电镀膜的磁铁试验片在如此获得的最外表面上与水进行超声冲洗3分钟,并在100℃下干燥60分钟。\n\n[0072]在用放大镜(在4倍放大率下)观察在20磁体试验片的最外表面上形成的Ni电镀膜的外观,没有发现具有针孔,突起,异物粘附等的缺陷的产品并且,所有这些都被评估为具有均匀涂层的细产品。在非导电涂层的表面上形成的Ni电镀膜的平均(n = 5)的总厚度为25μm(通过使用荧光X射线光谱观察);因此,发现Ni电镀膜的平均(n = 5)膜厚度为24μm。\n\n[0073]在15块电镀膜上进行耐腐蚀性试验,其在其最外表面上形成Ni电镀膜,通过允许它们静止在60℃和90%相对湿度的高温和高湿度条件下进行500小时。结果,在任何磁体测试件上都没有观察到异常外观,例如生锈,膜,膜,局部突起的产生等。\n\n比较例1\n\n[0074]在其中含有分散在其中的导电树脂溶液通过混合和均匀地搅拌75wt%的锌粉制备,其由平均直径为4μm的颗粒,22wt%的二甲苯,3wt%的EPOMIK(商业名称Mitsui Chemicals,Inc的可用产品;一种单液体型环氧树脂,其在固化时产生M80的罗克韦尔硬度。由此获得的溶液用于喷涂磁体试验片的整个表面,通过操作配备有孔径为1.5mm的孔径为0.2MPa的孔径为1.5mm。因此,通过在常温(20℃)下干燥60分钟并在200℃下烘烤30分钟,导电涂层(体积电阻率为5×10−1 根据JIS-H0505标准方法测量的ω·cm),其含有96wt%的分散锌粉形成在磁体试验片的表面上的15μm的膜厚度下(通过观察横截面测量)。通过在35℃下在如此获得的磁体试验片上喷洒5wt%盐水进行盐水喷雾试验,其上具有由含有分散在其中的锌粉的树脂制成的导电涂层。经过500小时后,在两个磁铁测试件上生锈(n = 50)。\n\n例2.\n\n[0075]通过使用含有分散在其中的相同的非导电树脂溶液如实施例1中那样,通过执行与实施例1中的相同的方法,得到具有由含锌树脂制成的非导电涂层的磁体试验片粉末分散在其中并进行筒抛光。在用水上进行超声冲洗3分钟后,在具有在其上形成的非导电涂层的桶抛光磁体试验片,磁体试验片浸入与实施例1中使用的瓦特浴中。实施例2与实施例1不同在该电镀过程中,在1.5 A / DM的电流密度下进行120分钟进行120分钟2 通过施加电压浸没的初始阶段。因此,在磁体试验片的最外表面上形成Ni电镀膜。\n\n[0076]将具有Ni电镀膜的磁铁试验片在如此获得的最外表面上与水进行超声冲洗3分钟,并在100℃下干燥60分钟。\n\n[0077]在用放大镜(在4倍放大率下)观察在20磁体试验片的最外表面上形成的Ni电镀膜的外观,没有发现具有针孔,突起,异物粘附等的缺陷的产品并且,所有这些都被评估为具有均匀涂层的细产品。在非导电涂层表面上形成的Ni镀膜的平均(n = 5)总厚度为25μm(通过使用荧光X射线光谱观察)。尽管在非导电涂层的表面上形成的Ni取代电镀膜的膜厚度是不可测量的,但是在最外表面上形成这种微量质量Ni电镀膜的事实表明,在下部形成Ni取代的电镀膜层,并且赋予整个表面的电导率。\n\n[0078]在15块电镀膜上进行耐腐蚀性试验,其在其最外表面上形成Ni电镀膜,通过允许它们静止在60℃和90%相对湿度的高温和高湿度条件下进行500小时。结果,在任何磁体测试件上都没有观察到异常外观,例如生锈,膜,膜,局部突起的产生等。\n\n比较例2:\n\n[0079]ELESHUT No.10 EMC(Ohashi Chemical Industries Ltd的市售产品的商品名;在固化时产生M80的罗克韦尔硬度,并基于含有平均粒径为5μm的镍粉末)的丙烯酸树脂。含有分散在其中镍粉的导电树脂,并用稀释剂稀释,用于合成树脂涂料,即5600(Ohashi Chemical Industres Ltd.的市售产品的商品名),重量比为1:0.5( elshut:更薄的)。通过均匀搅拌所得产物,得到含有分散在其中镍粉末的导电树脂溶液。由此获得的溶液用于喷涂磁体试验片的整个表面,通过操作配备有孔径为1.5mm的孔径为0.2MPa的吹气压力。因此,通过在常温(20℃)下干燥60分钟并在200℃下烘烤30分钟,导电涂层(体积电阻率为2×10−1 根据JIS-H0505标准方法测量的ω·cm,其含有66wt%的分散镍粉末以15μm的膜厚度(通过观察横截面测量)形成。\n\n[0080]通过执行与实施例1中相同的过程,获得了具有由含有分散在其中的镍粉末的树脂制成并且具有筒抛光的树脂制成的导电涂层。在用水上进行超声漂洗3分钟,在具有在其上形成的导电涂层的筒抛光磁体试验片上,将磁铁试验片浸入与实施例1中使用的瓦特浴中的相同的浴中。进行Ni电镀过程120电流密度为1.5 A / DM的分钟2 通过施加电压浸没的初始阶段。因此,在磁体试验片的最外表面上形成Ni电镀膜。\n\n[0081]将具有Ni电镀膜的磁铁试验片在如此获得的最外表面上与水进行超声冲洗3分钟,并在100℃下干燥60分钟。\n\n[0082]在用放大镜(以4倍倍率为倍率下),在20磁体试验片的最外表面上观察形成的Ni电镀膜的外观,与外部的针孔,突起和粘附相同在所有磁体试验片上形成不均匀的电镀,并评估所有磁体试验片的产品有缺陷的产品。在导电涂层表面上形成的Ni镀膜的平均(n = 5)为25μm(通过使用荧光X射线光谱观察)。上述结果表明,在比较例2中,未赋予高质量Ni电镀膜的足够的电导率,因为在Ni电镀膜的下层没有形成Ni取代的电镀膜。\n\n[0083]在15块电镀膜上进行耐腐蚀性试验,其在其最外表面上形成Ni电镀膜,通过允许它们静止在60℃和90%相对湿度的高温和高湿度条件下进行500小时。结果,在所有磁体测试件上观察到诸如生锈,膜,膜的凸出,局部突起的产生等异常出现。\n\n例3.\n\n[0084]ELESHUT No.10 EMC(Ohashi Chemical Industries Ltd的市售产品的商品名;在固化时产生M80的罗克韦尔硬度,并基于含有平均粒径为5μm的镍粉末)的丙烯酸树脂。含有分散在其中镍粉的导电树脂,以及与Suncoat No.503(Nagashima Special Paint Co.,Ltd的市售产品的商品名;在固化时产生M80的罗克韦尔硬度,并基于环氧树脂)稀释,用稀释剂稀释,用于合成树脂涂料,即5600号(Ohashi Chemical Industries Ltd.的商品名),重量比为1:0.2:0.5(ELESHUT:SUNCOAT:稀释剂),为了获得混合树脂,在固化时产生M80的罗克韦尔硬度。在加入0.5wt%的Dixarlon#2150(由kusumoto Chemicals,Ltd。生产的市售阴离子分散剂的商品名)之后并均匀地搅拌所得混合物,得到含有分散在其中的非导电树脂溶液。由此获得的溶液用于喷涂磁体试验片的整个表面,通过操作配备有孔径为1.5mm的孔径为0.2MPa的孔径为1.5mm。因此,通过在常温(20℃)下干燥60分钟并在200℃下烘烤30分钟,不导电涂层(具有4×10的体积电阻率4 根据JIS-H0505标准方法测量的ω·cm,其含有55wt%的分散镍粉末以15μm的膜厚度形成(通过观察横截面测量)在磁体试验片的表面上。\n\n[0085]通过执行与实施例1中的相同的方法,获得了具有由含有分散在其中的镍粉末的树脂制成的非导电涂层并具有筒抛光的磁体试验片。在用水上进行超声漂洗3分钟,在其上形成有非导电涂层的桶抛光磁体试验片,将磁铁试验片浸入40℃下30分钟,而不施加含有25的Cu电镀浴中的电压G / L硫酸铜五水合物,55克乙二胺四乙酸二钠,28.2克/升硫酸钠二水合物,71克/升硫酸钠,25.2克/升亚硫酸钠,pH调节至6.8使用氢氧化钠,从而在非导电涂层的表面上形成Cu取代的电镀膜。在这种情况下,从25个磁铁试验片中抽出了Cu电镀浴以研究如此形成的Cu取代电镀膜的膜厚度。发现平均膜厚度为2μm(通过使用荧光X射线光谱观察)。\n\n[0086]通过施加电压为1.5 A / DM的电压,对磁铁测试件(20件)的其余部分进行CU电镀工艺2 在Cu取代电镀膜的表面上形成Cu电镀膜90分钟。\n\n[0087]将如此获得的最外表面上的磁体试验片在如此获得的最外表上用水进行3分钟,并在100℃下干燥60分钟。\n\n[0088]在用放大镜(4倍放大率)观察在20磁体试验片的最外表面上形成的Cu电镀膜外观的外观,没有发现具有针孔,突起,异物粘附等的缺陷的产品并且,所有这些都被评估为具有均匀涂层的细产品。在非导电涂层表面上形成的平均(n = 5)的Cu电镀膜的总厚度为24μm(通过使用荧光X射线光谱观察);因此,发现Cu电镀膜的平均(n = 5)膜厚度为22μm。\n\n[0089]通过允许它们在60℃和90%相对湿度的高温和90%相对湿度的高温和高湿度条件下,在其中形成在最外表面上的15磁体试验片上进行耐腐蚀性测试。结果,在任何磁体试样上没有观察到诸如生锈,膜,膜的产生的产生的异常外观,虽然观察到棕褐色的微小着色。\n\n例4.\n\n[0090]通过在实施例1中进行相同的方法制备具有在其上形成的非导电涂层的桶抛光磁体试验片,并且在用水进行3分钟后进行超声漂洗后,将磁铁试验片浸入50℃下30几分钟不施加含有133g / L硫酸镍五水合物的低镍高硫酸盐浴中的电压,213g / L硫酸钠,13克/升氯化铵和18克/升硼酸,具有pH值通过使用氢氧化钠将5.8调节至5.8,从而在非导电涂层的表面上形成Ni取代的电镀膜1μm(通过使用荧光X射线光谱)的观察。然后,在1.5 A / DM的电流密度下进行NI电镀过程90分钟2 通过在Ni取代电镀膜的表面上施加电压以在膜厚度上形成Ni电镀膜24μm(通过使用荧光X射线光谱观察)。\n\n[0091]将具有Ni电镀膜的磁铁试验片在如此获得的最外表面上与水进行超声冲洗3分钟,并在100℃下干燥60分钟。在用放大镜(在4倍放大率下)观察形成在磁体试验片的最外表面上的Ni电镀膜的外观,没有异常外观,如针孔,突起,异物的粘附等。 。此外,通过允许它们在60℃和90%相对湿度的高温和90%相对湿度的高温和高湿度条件下,对具有形成在其最外表面上的Ni电镀膜的磁体试验片上进行耐腐蚀性测试。小时。结果,在任何磁体测试件上都没有观察到异常外观,例如生锈,膜,膜,局部突起的产生等。此外,在具有在其最外表面上形成的Ni电镀膜的磁体试验片上进行热冲击试验,通过将静止在120℃下仍然在热板上3分钟。结果,观察到Ni取代电镀膜与非导电涂层有缺陷的异常外观。\n\n例5.\n\n[0092]EPO ROVOROVOR(商品的ROVAL CORPORATION的商业名称;在固化时产生M80的罗克韦尔硬度,并且基于具有平均粒径为4μm的锌粉末的环氧树脂)用作含有非导电树脂分散在其中锌粉,以及巴厘岛(Maruzen Petrochemical Co.,Ltd的商用产品的商品名;在固化时产生M128的罗克韦尔硬度的聚酰亚胺树脂),用EPO稀释剂稀释(商品名ROVal Corporation的市售产品)以1:0.2:0.5(EPO覆橡胶:BANI:稀释剂)的重量比,以获得在固化时产生M90的罗克韦尔硬度的混合树脂。通过均匀搅拌所得混合物,得到含有分散在其中的非导电树脂溶液。由此获得的溶液用于喷涂磁体试验片的整个表面,通过操作配备有孔径为1.5mm的孔径为0.2MPa的孔径为1.5mm。因此,通过在普通温度(20℃)下干燥60分钟并在200℃下烘烤30分钟,不导电涂层(由于按照测量而测量的体积电阻率为2×106Ω·cm。含有77wt%的分散锌粉的JIS-H0505标准方法以10μm的膜厚度(通过观察横截面)在磁体试验片的表面上形成。\n\n[0093]具有由含有分散在其中分散在其中的锌粉的树脂制成的非导电涂层的磁体试验片以与实施例1相同的方式进行筒抛光。在桶抛光磁体试验上进行超声波冲洗3分钟后进行3分钟具有在其上形成的非导电涂层的件,在非导电涂层的表面上形成Ni取代的电镀膜1μm,在非导电涂层的表面上形成膜厚度的Ni电镀膜24μm在表面上进一步形成通过在实施例1中进行相同的方法(通过使用荧光X射线光谱观察)来取代电镀膜。\n\n[0094]将具有Ni电镀膜的磁铁试验片在如此获得的最外表面上与水进行超声冲洗3分钟,并在100℃下干燥60分钟。在用放大镜(在4倍放大率下)观察形成在磁体试验片的最外表面上的Ni电镀膜的外观,没有异常外观,如针孔,突起,异物的粘附等。 。此外,通过允许它们在60℃和90%相对湿度的高温和90%相对湿度的高温和高湿度条件下,对具有形成在其最外表面上的Ni电镀膜的磁体试验片上进行耐腐蚀性测试。小时。结果,在任何磁体测试件上都没有观察到异常外观,例如生锈,膜,膜,局部突起的产生等。此外,在具有在其最外表面上形成的Ni电镀膜的磁体试验片上进行热冲击试验,通过将静止在120℃下仍然在热板上3分钟。结果,观察到Ni取代电镀膜与非导电涂层有缺陷的异常外观。\n\n[0095]此外,作为汽油耐久性测试,在如此获得的磁体试验片上进行如下测试(以下称为“样品”),其具有形成在其最外表面上的Ni电镀膜。将三个样品与12ml市售的常规汽油一起置于耐压气密容器中,其内部容积为50mL,并且容器的盖子牢固地关闭。然后,将耐压气密容器封装在水浴(恒温水浴)中,并在80℃下保持2小时(容器的内压通过汽油的蒸气压升至约300kPa) ,将耐压空气密封容器从水浴中取出以保持在大气中12小时。该顺序操作使得一个循环,并准备经过该操作5,15,30和50个循环的样品进行研究,以研究在尺寸(外径,内径,高度),重量,环压强度(负载)上发生的变化垂直于环的中心线施加,测量破裂时的负载)。结果,即使在重复50个循环后,任何评价项目的任何样品中没有观察到任何特定的变化,显示出对汽油的样品的优异耐久性。虽然在磁性特性上观察到轻微降解,但它没有实际问题。此外,在对磁体试验件本身上进行汽油耐久性测试的情况下,由于树脂粘合剂通过汽油溶胀,在磁体试卷上观察到尺寸大大增加。\n\n例6.\n\n[0096]通过在实施例5中与水相同的方法制备具有在其上形成的非导电涂层的桶抛光磁体试验片,并在用水进行3分钟后,进行与实施例4中相同的方法以形成Ni取代镀膜1μm在非导电涂层的表面上的膜厚度,并且在Ni取代电镀膜的表面上的膜厚度下进一步是Ni电镀膜24μm(通过使用荧光X射线光谱观察)。\n\n[0097]将具有Ni电镀膜的磁铁试验片在如此获得的最外表面上与水进行超声冲洗3分钟,并在100℃下干燥60分钟。在用放大镜(在4倍放大率下)观察形成在磁体试验片的最外表面上的Ni电镀膜的外观,没有异常外观,如针孔,突起,异物的粘附等。 。此外,通过允许它们在60℃和90%相对湿度的高温和90%相对湿度的高温和高湿度条件下,对具有形成在其最外表面上的Ni电镀膜的磁体试验片上进行耐腐蚀性测试。小时。结果,在任何磁体测试件上都没有观察到异常外观,例如生锈,膜,膜,局部突起的产生等。此外,在具有在其最外表面上形成的Ni电镀膜的磁体试验片上进行热冲击试验,通过将静止在120℃下仍然在热板上3分钟。结果,观察到Ni取代电镀膜与非导电涂层有缺陷的异常外观。\n\n实验B(在透明丙烯饼片表面上形成电镀膜)\n\n[0098]每个60 mm的五个透明丙烯酸片,宽度为20mm,厚度为2 mm,在紧凑的振动桶(由Tipton Corp.制造的VM-10,由Tipton Corp.制造的VM-10制造的厚度)。由2L氧化铝介质(PSφ4制造)。 Tipton Corp.)和透明丙烯酸片的表面抛光30分钟。然后,将表面抛光经受表面抛光的透明丙烯酸片浸入丙酮中1分钟以进行表面脱脂,并使自然干燥。\n\n[0099]EPO ROVOR(roval Corporation的市售产品的商品名;含有平均粒径为4μm的锌粉作为含有分散在其中锌粉的非导电树脂,并用EPO稀释剂稀释(贸易ROVal Corporation的市售产品的名称),重量比为1:0.7(EPO橡皮:稀释剂)。通过均匀搅拌所得产物,得到含有分散在其中锌粉的非导电树脂溶液。由此获得的溶液用于喷涂透明丙烯片材的整个表面,操作空气喷射装置,该空气喷涂装置在吹风直径处的吹气直径为0.2MPa的吹气压力。因此,通过在常温(20℃)下干燥60分钟并在200℃下烘烤30分钟,不导电涂层(具有2×10的体积电阻率5 根据JIS-H0505标准方法测量的ω·cm,其含有96wt%的分散的锌粉形成为15μm的膜厚度(通过观察横截面测量)在透明丙烯片材的表面上。\n\n[0100]在步骤1中获得的具有在其上形成的非导电涂层的五个透明丙烯酸片被设定在紧凑的振动桶(VM-10,由Tipton Corp.制造)的内部与2L氧化铝介质(PSφ4,由Tipton Corp制造。 ),并且不导电涂层的表面抛光30分钟进行。\n\n[0101]在其上形成的非导电涂层并经受表面抛光的透明丙烯酸片浸入55℃下30分钟,而不在含有240g / L硫酸镍硫酸丁水果的瓦特浴中施加电压,45g / L氯化镍五水合物和35g / L的硼酸,使用碱性镍碳酸镍调节至4.2,从而在非导电涂层的表面上形成Ni取代的电镀膜。在这种情况下,从瓦特的浴中抽出5个中的2个,以研究由此形成的Ni取代电镀膜的膜厚度。结果,发现Ni取代的电镀膜的平均膜厚度为1μm(通过观察横截面测量)。由此形成的Ni取代的电镀膜作为金属Ni表现出表面外观,并产生5×10的体积电阻率−6 ω·cm。因此,发现在该阶段可以获得实际上令人满意的产品,只要它们用于赋予装饰性,表面导电性抗静电目的等即可。\n\n[0102]通过以1.5A / DM的电流密度施加电压,将其余的透明丙烯酸片(3张)进行NI电镀工艺2 在Ni取代电镀膜的表面上形成Ni电镀膜90分钟。\n\n[0103]将如此获得的最外表表面上的透明丙烯酸片在如此获得的最外表上进行超声冲洗3分钟,并在100℃下干燥60分钟。\n\n[0104]在用放大镜(在4倍放大率)上观察形成在3透明丙烯酸片的最外表面上的Ni电镀膜的外观,没有缺陷的产品,具有针孔,突起,异物的粘附等。并且,所有这些都被评估为具有均匀涂层的细产品。在非导电涂层表面上形成的Ni镀膜的平均(n = 3)总厚度为25μm(通过观察横截面测量);因此,发现Ni电镀膜的平均(n = 3)膜厚度为24μm。\n\n实验C(在木吉祥物蝙蝠表面上形成电镀薄膜)\n\n[0105]类似于实验B的情况,在木吉祥物BAT的表面的长度和直径约10mm的表面的表面上形成均匀和致密的Ni电镀膜。\n\n实验D(在波纹纤维板的表面上形成电镀膜)\n\n[0106]类似于实验B的情况(除了省略使用紧凑型振动筒的两次进行的表面抛光步骤),在长度为20mm的波纹纤维板的表面上形成均匀和致密的Ni电镀膜。宽度为2毫米。\n\n实验E(在透明玻璃板表面上形成电镀膜)\n\n[0107]类似于实验B的情况B,在长度为20mm的透明玻璃板的表面上具有高粘合强度,宽度为20mm,厚度为2mm,形成均匀和致密的Ni电镀膜。\n\n实验F(在铝板表面上形成电镀膜)\n\n[0108]与实验B的情况类似,在长度为20mm的铝板的表面上具有高粘合强度,宽度为20mm,厚度为2mm,形成均匀和致密的Ni电镀膜。\n\n实验G(在镁合金板的表面上形成电镀膜)\n\n[0109]类似于实验B的情况,在长度为20mm的镁合金板的表面上具有高粘合强度,宽度为20mm,厚度为2mm,形成均匀和致密的Ni电镀膜。\n\n工业实用性\n\n[0110]本发明提供了一种在物品表面上具有高粘合强度的均匀和致密电镀膜的方法,但与物品的表面材料和表面性质无关。');
INSERT INTO `os_patent_instruction_text` VALUES (12964, 22793, '【0001】明細書 物品表面への電気めつき被膜の形成方法 技術分野\n\n【0002】本発明は、 物品の表面材質や表面性状に依存することなくその表面に均一で緻 密な電気めつき被膜を優れた密着性でもって形成する方法に関する。 背景技術\n\n【0003】装飾性、 耐候性、 帯電防止などのための表面導電性、 電磁波遮断性、 抗菌性、 耐衝撃性などを物品に付与する目的で、 その表面に金属被膜を形成することが従 来から行われている。 金属被膜を形成するための方法は各種あるが、 中でも、 電 気めつき処理による電気めつき被膜形成方法は、 大量生産にも適していることか ら広く実用化されている。\n\n【0004】しかしながら、 物品表面に電気めつき被膜を形成するためには、 物品表面に導 電性が必要となる。 従って、 プラスチック、 木材、 紙、 ガラス、 セラミックス、 ゴム、 コンクリートなどの非導電性材質からなる物品表面に直接的に電気めつき 被膜を形成することはできない。 また、 マグネシウムやアルミニウムやチタンな どの金属材質からなる物品 （携帯電話やノート型パーソナルコンピュータの筐体 など） 表面に金属被膜を形成したい塲合があるが、 マグネシウムは金属の中でも 特に卑な金属である。 従って、 その表面に電気めつき被膜を形成しょうとしても、 めつき浴に浸潰した途端に急激な置換めつき反応が起こってしまうので、 良質の 電気めつき被膜を形成することは困難である。 アルミニウムやチタンは非常に酸 化しやすい金属であり、 通常、 その表面は非常に緻密な金属酸化膜で覆われてい る。 従って、 これらの金属はイオン化傾向が低いにもかかわらず、 その表面の電 位が高くなつているので、 電気めつき処理を行うことは困難である。 表面に存在 する金属酸化膜を除去すれば、 電気めつき被膜を形成することは可能となるが、 特殊なエッチング技術が必要となる上に、 金属酸化膜を除去した後は、 再び金属 酸化膜が生成するまでに電気めつき処理を行わなくてはならないといった時間的\n\n制約が発生するので、 実用上問題があるといわざるを得ない。 水酸化ナトリウム と水酸化亜鉛を含有する溶液に浸漬することで、 強アルカリ環境下にてエツチン グを行うと同時に亜鉛の置換めつき被膜を形成する所謂ジンゲート処理をした後、 無電解めつき被膜を形成する工程を介して電気めつき処理を行う方法もあるが全 体工程が複雑である。\n\n【0005】また、 木製バットゃレンガゃダイカスト品などのように表面に空孔部ゃ微細溝 や凹凸を有する物品表面に均一な電気めつき被膜を形成しょうとした場合には、 物品表面に対して導電性を如何に付与するかという点とともに物品表面の平滑性 を如何に確保するかという点を解決しなければならない。\n\n【0006】また、 マグネシウムなどの金属のように腐食性の高い材質からなる物品は、 電 気めつき処理を行った際に腐食することがあるので、 このような物品に対して電 気めつき被膜を形成することには困難が伴う。\n\n【0007】公知の技術を利用して上記の問題を解決しょうとした場合、 特開昭 6 1 - 2 1 0 1 8 3号公報に記載された、 物品表面に金属粉末を分散させた樹脂からなる樹 脂被膜を形成した後、 この樹脂被膜表面に無電解めつき被膜を形成する方法を採 用し、 こうして形成される無電解めつき被膜表面に電気めつき被膜を形成する方 法が考えられる。 しかしながら、 無電解めつき被膜は、 めっき液中の金属イオン を還元剤の作用により還元して被めつき物表面に金属析出させることで形成され る被膜であるので、 被めつき物との密着性に劣るとともに成膜効率の点において も劣る。 パラジウム触媒や白金触媒を使用して成膜効率を向上させる方法もある が、 この方法ではコストアップが避けられない。 また、 無電解めつき被膜に含ま れる還元剤由来の不純物がその表面への電気めつき被膜の形成に悪影響を及ぼす ことが否定できない。\n\n【0008】そこで本発明は、 物品の表面材質や表面性状に依存することなくその表面に均 一で緻密な電気めつき被膜を優れた密着性でもつて形成する方法を提供すること を目的とする。 発明の開示\n\n【0009】上記の点に鑑みて本発明者らが種々の検討を行ったことにより完成された本発\n\n明の物品表面への電気めつき被膜の形成方法は、 請求の範囲第 1項記載の通り、 物品表面に第 1金属の粉末を分散させた棚旨からなる樹脂被膜を形成した後、 こ の樹脂被膜形成物品を第 1金属より貴な電位を有する第 2金属のイオンを含む溶 液に浸漬することで樹脂被膜表面に第 2金属の置換めつき被膜を形成し、 さらに 置換めつき被膜表面に第 3金属の電気めつき被膜を形成することを特徴とする。 また、 請求の範囲第 2項記載の形成方法は、 請求の範囲第 1項記載の形成方法 において、 樹脂被膜が非導電性被膜であることを特徴とする。\n\n【0010】また、 請求の範囲第 3項記載の形成方法は、 請求の範囲第 2項記載の形成方法 において、 物品が希土類系永久磁石であることを特徴とする。\n\n【0011】また、 請求の範囲第 4項記載の形成方法は、 請求の範囲第 3項記載の形成方法 において、 希土類系永久磁石がボンド磁石であることを特徴とする。\n\n【0012】また、 請求の範囲第 5項記載の形成方法は、 請求の範囲第 2項記載の形成方法 において、 非導電性被膜の体積抵抗率が 1 X 1 04Ω · c m以上であることを特 徴とする。\n\n【0013】また、 請求の範囲第 6項記載の形成方法は、 請求の範囲第 1項記載の形成方法 において、 樹脂被膜中における第 1金属の粉末の分散量が 5 0重量％〜9 9重 量％であることを特徴とする。\n\n【0014】また、 請求の範囲第 7項記載の形成方法は、 請求の範囲第 1項記載の形成方法 において、 第 1金属の粉末の平均粒径が 0. 0 0 1 m〜3 0 mであることを 特徴とする。\n\n【0015】また、 請求の範囲第 8項記載の形成方法は、 請求の範囲第 1項記載の形成方法 において、 樹脂被膜の膜厚が 1 / m〜 1 0 0 mであることを特徴とする。 また、 請求の範囲第 9項記載の形成方法は、 請求の範囲第 1項記載の形成方法 において、 第 1金属が亜鉛で第 2金属がニッケルまたはスズであることを特徴と する。\n\n【0016】また、 請求の範囲第 1 0項記載の形成方法は、 請求の範囲第 1項記載の形成方 法において、 第 1金属がニッゲルで第 2金属が銅であることを特徴とする。 また、 請求の範囲第 1 1項記載の形成方法は、 請求の範囲第 1項記載の形成方 法において、 第 2金属と第 3金属が同じ金属であることを特徵とする。\n\nまた、 請求の範囲第 1 2項記載の形成方法は、 請求の範囲第 1 1項記載の形成 方法において、 置換めつき被膜を形成する工程と電気めつき被膜を形成する工程 を一つのめっき浴において行うことを特徴とする。\n\n【0017】また、 請求の範囲第 1 3項記載の形成方法は、 請求の範囲第 1項記載の形成方 法において、 置換めつき被膜の膜厚が 0 . 0 5 m〜2 // mであることを特徴と する。\n\n【0018】また、 本発明の物品は、 請求の範囲第 1 4項記載の通り、 請求の範囲第 1項記 載の形成方法により表面に電気めつき被膜が形成されていることを特徴とする。 また、 本発明の物品表面への置換めつき被膜の形成方法は、 請求の範囲第 1 5 項記載の通り、 物品表面に第 1金属の粉末を分散させた樹脂からなるST脂被膜を 形成した後、 この樹脂被膜形成物品を第 1金属より貴な電位を有する第 2金属の ィオンを含む溶液に浸漬することで樹脂被膜表面に第 2金属の置換めつき被膜を 形成することを特徴とする。\n\n【0019】また、 本発明の物品は、 請求の範囲第 1 6項記載の通り、 請求の範囲第 1 5項 記載の形成方法により表面に置換めつき被膜が形成されていることを特徴とする。 また、 本発明の電気めつき被膜を表面に有する希土類系永久磁石は、 請求の範 囲第 1 7項記載の通り、 希土類系永久磁石表面に第 1金属の粉末を分散させた樹 脂からなる非導電性被膜を形成した後、 非導電性被膜形成磁石を第 1金属より貴 な第 2金属のイオンを含む溶液に浸漬することで非導電性被膜表面に第 2金属の 置換めつき被膜を形成し、 さらに置換めつき被膜表面に第 3金属の電気めつき被 膜を形成することで製造されたことを特徴とする。\n\n【0020】また、 本発明の電気めつき被膜を表面に有する希土類系永久磁石は、 請求の範 囲第 1 8項記載の通り、 希土類系永久磁石表面に第 1金属の粉末を分散させた榭 脂からなる非導電性被膜が形成され、 さらにその表面に第 1金属より貴な第 2金 属の置換めつき被膜を介して第 3金属の電気めつき被膜が形成されていることを 特徴とする。\n\n【0021】また、 本発明の置換めつき被膜を表面に有する希土類系永久磁石は、 請求の範 囲第 1 9項記載の通り、 希土類系永久磁石表面に第 1金属の粉末を分散させた樹 脂からなる非導電性被膜が形成され、 さらにその表面に第 1金属より貴な第 2金\n\n属の置換めつき被膜が形成されていることを特徴とする。\n\n【0022】また、 本発明の非導電性被膜を表面に有する希土類系永久磁石は、 請求の範囲 第 2 0項記載の通り、 希土類系永久磁石表面に第 1金属の粉末を分散させた樹脂 からなる非導電性被膜が形成されていることを特徴とする。 発明を実施するための最良の形態\n\n【0023】本発明の物品表面への電気めつき被膜の形成方法は、 物品表面に第 1金属の粉 末を分散させた樹脂からなる樹脂被膜を形成した後、 この樹脂被膜形成物品を第 1金属より貴な電位を有する第 2金属のイオンを含む溶液に浸漬することで樹脂 被膜表面に第 2金属の置換めつき被膜を形成し、 さらに置換めつき被膜表面に第 3金属の電気めつき被膜を形成することを特徴とするものである。\n\n【0024】本発明の物品表面への電気めつき被膜の形成方法においては、 物品表面に第 1 金属の粉末を分散させた棚 からなる樹脂被膜を形成し、 次に、 この樹脂被膜表 面やその近傍に存在する第 1金属の粉末を起点とする置換めつき反応を利用する ことで密着性に優れた第 2金属の置換めつき被膜を樹脂被膜表面全体に形成する。 これにより結果として物品表面全体に導電性が付与されることになるので、 置換 めっき被膜表面に均一で緻密な第 3金属の電気めつき被膜を優れた密着性でもつ て形成することが可能となる。 従って、 物品の表面材質や表面性状に依存するこ となく、 プラスチック、 木材、 紙、 ガラス、 セラミックス、 ゴム、 コンクリート、 金属などのあらゆる材質からなる物品表面に均一で緻密な電気めつき被膜を優れ た密着性でもって形成することができる。\n\n【0025】以下、 本発明の物品表面への電気めつき被膜の形成方法について、 順を追って 説明する。\n\n【0026】工程 1 ：\n\n【0027】まず、 物品表面に第 1金属の粉末を分散させた樹脂からなる樹脂被膜を形成す る。 樹脂被膜の主体となる樹脂としては、 例えば、 熱硬化性樹脂を使用すること ができる。 具体的には、 フエノール樹脂、 エポキシ樹脂、 メラミン樹脂、 ァクリ ル樹脂、 ポリエステル樹脂、 ウレタン樹脂、 ポリイミド樹脂、 スチレンアクリル 樹脂およびこれらの混合樹脂などが挙げられる。\n\n樹脂被膜中に分散される第 1金属の粉末の種類に特段の制限はないが、 後のェ 程において置換めつき反応を起すためには、 第 1金属は第 2金属よりも卑な電位 を有することが必須となる。 従って、 第 1金属は第 2金属との電位差を考慮して 適宜選択される。 第 1金属と第 2金属の組合せの具体例としては、 第 1金属が亜 鉛で第 2金属がニッケルやスズの組合せや、 第 1金属がニッケルで第 2金属が銅 の組合せなどが挙げられる。\n\n【0028】第 1金属の粉末を分散させた樹脂からなる樹脂被膜は、 導電性被膜であっても 非導電性被膜であってもよいが、 マグネシウムなどの金属のように腐食性の高い 材質からなる物品表面に形成する樹脂被膜や、 後に述べるような腐食性の高い希 土類系永久磁石の表面に形成する樹脂被膜は非導電性被膜であることが望ましい。 置換めつき処理や電気めつき処理を行った際に樹脂被膜表面が腐食したとしても、 また、 樹脂被膜表面に置換めつき被膜を介して形成された電気めつき被膜にピン ホールや傷などの欠陥が生じ、 当該欠陥を通じるなどして樹脂被膜表面が腐食し たとしても、 樹脂被膜内部を通して腐食が物品表面まで進行してしまうといった ことを防止することができるからである。\n\n【0029】ところで、 N d— F e— B系永久磁石に代表される R _ F e _ B系永久磁石な どの希土類系永久磁石は、 資源的に豊富で安価な材料が用いられ、 かつ、 高い磁 気特性を有していることから、 今日様々な分野で使用されている。\n\n【0030】近年、 希土類系永久磁石が使用される電子業界や家電業界では、 部品の小型化 やダウンサイジング化が進み、 それに対応して、 磁石自体も小型化や複雑形状化 の必要性に迫られている。\n\n【0031】この観点から、 磁性粉と樹脂バインダーを主成分とした、 形状成形が容易なポ ンド磁石が注目され、 すでに各種方面で実用化されている。\n\n【0032】希土類系永久磁石は、 大気中で酸化腐食されやすい Rを含む。 それ故、 表面処 理を行わずに使用した場合には、 わずかな酸やアルカリや水分などの影響により 表面から腐食が進行して鲭が発生し、 それに伴って、 磁気特性の劣化やばらつき を招くことになる。 さらに、 錡が発生した磁石を磁気回路などの装置に組み込ん だ場合、 鑌が飛散して周辺部品を汚染する恐れがある。\n\n【0033】この問題点を解消すべく、 磁石表面に耐食性被膜としての電気めつき被膜を形\n\n成する試みがなされている。 しかし、 ポンド磁石表面に直接的に電気めつき被膜 を形成しょうとした場合、 磁石表面を構成する樹脂バインダーで絶縁化されてい る磁性粉やこれらの磁性粉間の樹脂部分は導電性が低いために均一で緻密な被膜 を形成することができず、 その結果、 ピンホール （無めつき部分） が生じて発錡 を招く場合がある。\n\n【0034】以上の点に鑑み、 ボンド磁石表面全体に導電性を付与した後に電気めつき被膜 を形成する方法として、 例えば、 特許第 2 7 1 9 6 5 8号 （特開平 4一 2 7 6 0 9 5号） 公報には、 ボンド磁石表面に樹脂と導電性材料粉末との混合物を塗布し て導電性樹脂被膜を形成した後、 電気めつきを施す方法が提案されている。 しか し、 この方法では、 ミクロ的に見ると樹脂表面全体に必ずしも十分な導電性が付 与されているわけではないので、 表面に導電性が低い部分が存在することは否め ず、 その結果、 均一で緻密な電気めつき被膜を形成することができないという問 題がある。 また、 磁石表面に形成される樹脂被膜が導電性であるので、 電気めつ きを行った際などに樹脂被膜表面が腐食すると、 被膜内部における導電部を通じ て腐食が磁石表面まで進行してしまうといった問題もある。\n\n【0035】また、 上記特許公報には、 ボンド磁石表面に無電解めつきを施した後、 電気め つきを施す方法も提案されているが、 この方法では、 無電解めつきを行った際な どに処理液の溶媒となる水や処理液に含まれる各種の成分が磁石の空孔部などに 残存してしまい、 磁石の腐食を招く場合があるほか、 形成される被膜自体の磁石 表面に対する密着性も優れたものとは言い難い。\n\n【0036】従って、 上記のようなこれまでに提案されている方法では、 満足できるに足る 成果を得ることができないことから、 ボンド磁石表面に電気めつき被膜を形成す るための新たな方法が待ち望まれていた。 本発明によれば、 ボンド磁石表面にも 均一で緻密な電気めつき被膜を優れた密着性でもつて形成することができ、 ボン ド磁石表面に形成する樹脂被膜を非導電性被膜とすることで、 ボンド磁石に優れ た耐食性を付与することができる。\n\n【0037】第 1金属の粉末を分散させた樹脂からなる非導電性被膜は、 例えば、 第 1金属 の粉末を分散させた非導電性の樹脂自体を、 また、 必要であればこのような樹脂 を有機溶剤を用いて希釈して調製した溶液を処理液として物品表面にスプレー塗\n\n装したり、 処理液中に物品を浸潰して浸漬塗装を行ったりした後、 これを乾燥さ せることにより形成する。 金属粉末を分散させた非導電性の樹脂は市販されてい るものもあり、 簡便に入手することができる。 第 1金属の粉末を分散させた樹脂 が導電性であつても、 有機分散媒を添加して個々の金属粉末を均一に分散させて 隔離することで処理液を非導電性のものとすることもできる。 この場合、 有機分 散媒としては、 ァニオン性分散媒 （脂肪族系多価カルボン酸、 ポリエーテルポリ エステルカルボン酸塩、 高分子ポリエステル酸ポリアミン塩、 高分子量ポリカル ボン酸長鎖ァミン塩など） 、 非イオン性分散媒 （ポリオキシエチレンアルキルェ 一テルゃソルビタンエステルなどのカルボン酸塩ゃスルフォン酸塩やアンモニゥ ム塩など） 、 高分子分散媒 （水溶性エポキシのカルボン酸塩ゃスルフォン酸塩や アンモニゥム塩など、 スチレン—アクリル酸共重合物、 ニカヮなど） などが金属 粉末との親和性やコストの点から好適に使用される。 また、 非導電性被膜を形成 することができる処理液であれば、 それ自体が導電性であってもよい。 処理液の 調製に際しては、 ポールミルやアトライターやサンドミルなどの分散機を適宜使 用することができる。\n\n【0038】樹脂被膜中の金属粉末が置換めつき反応の起点となり、 樹脂被膜表面全体に置 換めっき被膜が形成されるためには、 樹脂被膜表面やその近傍に金属粉末が均一 にしかもリッチに存在することが有利である。 従って、 この観点からは、 樹脂被 膜中における金属粉末の分散量が 5 0重量％以上となるように処理液を調製する ことが望ましい。 樹脂被膜中における金属粉末の分散量の上限は限定されるもの ではないが、 通常、 金属粉末の分散量が 9 9重量％を越える樹脂被膜を形成する ための処理液を調製することは困難である （処理液中において金属粉末が凝集沈 降するといつた問題や処理液の粘性が上昇して取扱性に劣るといった問題が生じ るため） 。 従って、 製造上においては樹脂被膜中における金属粉末の分散量の上 限は 9 9重量％である。\n\n【0039】なお、 金属粉末が均一分散した処理液を調製するためには、 金属粉末の平均粒 径は 0 . 0 0 1 ！〜 3 0 mであることが望ましく、 0 . 0 l m〜1 2 m であることがより望ましく、 2 μ ΐΉ〜1 0 mであることがさらに望ましい。 以上のようにして形成される第 1金属の粉末を分散させた樹脂からなる樹脂被\n\n膜を非導電性被膜とした場合、 被膜が非導電性であるが故、 たとえ被膜表面が腐 食したとしても、 被膜内部を通じて腐食が物品表面まで進行してしまうことを防 止するので、 それ自体が物品に対して耐食性を付与するという効果を有する。 こ の効果には、 被膜が有する自己修復作用 （第 1金属の腐食化合物 （第 1金属が亜 鉛の場合には Z n C 12· 4 Z n (OH)2や Z n Oなどが該当する） の生成や 樹脂の膨潤による体積増加により被膜にピンホールや傷などの欠陥が存在しても 当該欠陥を埋没させてしまうという作用） や第 1金属が有する犠牲防食作用など も寄与しているものと考えられる。 この効果をより確実なものとするためには、 非導電性被膜の体積抵抗率を 1 X 1 04Ω · c m以上とすることが望ましい。 前 述の有機分散媒を処理液中に添加して処理液中における金属粉末の凝集沈降を抑 制し、 金属粉末の分散性を高めることで体積抵抗率を高めるようにしてもよい。 物品が希土類系永久磁石である場合、 表面に高い体積抵抗率の非導電性被膜を有 する磁石は、 モー夕に組み込んで使用した場合、 磁石内部に発生する渦電流が少 ない。 従って、 渦電流に起因する発熱による熱減磁も少ないので、 モー夕効率の 低減を抑制することができる点において価値がある。 こうした磁石を複数個積層 してモータに組み込んだ場合、 その価値は特に高いものとなる。\n\n【0040】なお、 上記の効果を十分に発揮させるとともに、 樹脂被膜表面を平滑なものと し、 樹脂被膜表面やその近傍に金属粉末を均一にしかもリッチに存在させ、 樹脂 被膜表面全体に均一な置換めつき被膜が形成されるようにするためには、 樹脂被 膜の膜厚は 1 m〜l 0 0 mであることが望ましい。 しかしながら、 樹脂被膜 の膜厚が増大すると、 ともすれば、 均一な電気めつき被膜の形成に悪影響を及ぼ すことがある。 従って、 この点や物品が希土類系永久磁石である場合における磁 石の有効体積などを考慮すると、 樹脂被膜の膜厚の上限は 3 0 mであることが より望ましい。\n\n【0041】なお、 第 1金属の粉末を分散させた樹脂からなる樹脂被膜を形成するためのェ 程を行う前に、 物品表面と樹脂被膜との界面の密着性を向上させるため、 物品表 面の脱脂などによる自体公知の清浄化やバレル研磨による投錨効果の付与などを 行ってもよい。\n\n【0042】工程 2 ：\n\n次に、 工程 1で樹脂被膜がその表面に形成された物品を第 1金属より貴な電位 を有する第 2金属のイオンを含む溶液に浸漬することで樹脂被膜表面に第 2金属 の置換めつき被膜を形成する。 第 2金属の置換めつき被膜は、 物品表面全体に導 電性を付与する機能を有するとともに、 第 1金属の粉末が樹脂被膜から脱粒する ことを防止し、 物品表面清浄性の向上に寄与する。 この工程は置換めつき被膜を 形成するための常法に従って行えばよいが、 後の工程において均一で緻密な第 3 金属の電気めつき被膜を形成するために十分な導電性を確保するという観点から は、 0 . 0 5 m以上の膜厚を有する被膜を形成することが望ましい。 置換めつ き被膜を形成する前に、 樹脂被膜表面を平滑なものとするとともに樹脂被膜中に 均一分散された第 1金属の粉末の活性面を露出させる目的で樹脂被膜がその表面 に形成された物品に対してバレル研磨を施してもよい。 なお、 置換めつき被膜の 膜厚の上限は特段限定されるものではないが、 製造コス卜の点に鑑みれば 2 u rn 以下とすることが望ましい。 なお、 装飾性や帯電防止などのための表面導電性な どを物品に付与する目的においては、 表面に置換めつき被膜が形成されたこの段 階のものであっても実用上満足できるに足る効果を得ることができる。\n\n【0043】工程 3 ：\n\n【0044】最後に、 工程 2で形成された置換めつき被膜表面に第 3金属の電気めつき被膜 を形成する。 この工程は電気めつき被膜を形成するための常法に従って行えばよ い。 前述のように、 第 1金属と第 2金属との組合せについては両者の電位差を考 慮しなければならないが、 第 3金属については第 2金属との関係において特段考. 慮しなければならない事情はなく、 例えば、 N i、 C u、 S n、 C o , Z n、 C r、 A g、 A u、 P b、 P tなどのような、 通常、 電気めつき被膜として形成さ れる金属が第 3金属として適用される。 従って、 第 2金属と第 3金属が同じ金属 であっても何ら問題はない。 \' 第 2金属と第 3金属を同じ金属とする場合、 即ち、 置換めつき被膜を構成する 金属と電気めつき被膜を構成する金属を同じ金属とする場合には、 置換めつき被 膜を形成する工程 2と電気めつき被膜を形成する工程 3を一つのめっき浴におい て行うことが好都合である。 即ち、 例えば、 その表面に第 1金属の粉末を分散さ せた樹脂からなる樹脂被膜が形成された物品をめつき浴に浸潰した当初、 電圧を\n\nかけないことで置換めつき反応を進行させて置換めつき被膜を形成した後、 電圧 をかけることで電気めつき被膜を形成することができる。 また、 その表面に第 1 金属の粉末を分散させた樹脂からなる樹脂被膜が形成された物品をめつき浴に浸 漬した当初から電圧をかけた場合でも、 浸漬初期の段階に.おいては樹脂被膜の体 積抵抗率が高いので、 樹脂被膜表面ではまず第 1金属と第 2金属の電位差による 置換めつき反応が起こって置換めつき被膜が形成される。 これにより結果として 物品表面全体に導電性が付与されて、 置換めつき被膜表面に均一で緻密な電気め つき被膜が形成される。 電気めつき被膜の膜厚は、 その目的に応じて適宜設定す ればよいが、 物品が希土類系永久磁石の場合、 磁石の有効体積をできる限り確保 するという観点と優れた耐食性を発揮させるという観点からは、 電気めつき被膜 の膜厚は 1 0 m〜3 0 mが望ましい。\n\n【0045】例えば、 希土類系ボンド磁石表面に置換 N iめっき被膜と電気 N iめっき被膜 を一つのめっき浴において形成する場合においては、 めっき浴槽は磁石の形状に 応じて種々の浴槽を使用することができる。 めっき浴としては、 ワット浴、 スル ファミン酸浴、 ウッド浴などの公知のめっき浴を用いればよい。 第 1金属の粉末 を分散させた樹脂からなる非導電性被膜表面に密着性に優れた置換 N iめっき被 膜を形成するためには、 例えば、 低ニッケル高硫酸塩浴などを使用し、 第 1金属 とニッケルとの間の過度な置換効率 （置換 N iめっき被膜の成膜速度） を抑制す ることが望ましい。 好適な低ニッケル高硫酸塩浴としては、 硫酸ニッケル · 5水 和物 1 0 0 g/L〜l 7 0 g ZL、 硫酸ナトリウム 1 6 0 g ZL〜2 7 0 g/L、 塩化アンモニゥム 8 g ZL〜l 8 g /L、 ホウ酸 1 3 g ZL S 3 g /Lからな るめつき浴が挙げられる。 めっき浴の p Hは 4. 0〜8 . 0とすることが望まし い。 4. 0未満であると酸性条件に不安定な希土類系ポンド磁石に対して悪影響 を及ぼす恐れがある一方、 8 . 0を超えると形成された置換 N iめっき被膜の密 着性が劣る恐れがあるからである。 また、 めっき浴の p Hを 4. 0〜8 . 0とす ることには、 N iよりも卑な電位を有する第 1金属が急激に溶出して粗雑な置換 N iめっき被膜が形成され、 その表面に形成される電気 N iめっき被膜との密着 性に悪影響を及ぼすといったことを効果的に抑制する目的もある。 めっき浴の浴 温は 3 0 ：〜 7 0 とすることが望ましい。 3 0 °C未満であると形成された置換\n\nN iめっき被膜の表面が粗雑なものになる恐れがある一方、 70°Cを超えると浴 温管理が難しく、 均一な置換 N iめっき被膜が形成されない恐れがあるからであ る。 このようなめっき浴を用いて置換 N iめっき被膜を形成した後に電気 N iめ つき被膜を形成するに際しては、 電流密度は 0. 2 A/dm2〜20 AZdm2とすることが望ましい。 0. 2 AZdm2未満であると成膜速度が遅くて生産性 に劣る恐れがある一方、 2 OA/dm2を超えると形成された電気 N iめっき被 膜の表面が粗雑なものとなり、 ピンホールが多数発生する恐れがあるからである。 なお、 陽極には電解 N i板を用いるが、 N iの溶出を安定させるために、 電解 N i板として Sを含有したニッケルチップを使用することが望ましい。\n\n【0046】例えば、 希土類系ボンド磁石表面に置換 Snめっき被膜と電気 Snめっき被膜 を一つのめっき浴において形成する場合においても、 めっき浴槽は磁石の形状に 応じて種々の浴槽を使用することができる。 めっき浴の pHは 3. 5〜9. 0で あることが望ましい。 3. 5未満であると酸性条件に不安定な希土類系ポンド磁 石に対して悪影響を及ぼす恐れがある一方、 9. 0を超えると形成された置換 S nめっき被膜の密着性が劣る恐れがあるからである。 めっき浴の浴温は 15°C〜 35°Cとすることが望ましい。 15°C未満であると形成された置換 Snめっき被 膜の表面が粗雑なものになる恐れがある一方、 35°Cを超えると浴温管理が難し く、 均一な置換 Snめっき被膜が形成されない恐れがあるからである。 このよう なめつき浴を用いて置換 S nめっき被膜を形成した後に電気 S nめっき被膜を形 成するに際しては、 電流密度は 0. 1八 (11112〜5. OAZdm2とすること が望ましい。 0. 1 AZdm2未満であると成膜速度が遅くて生産性に劣る恐れ がある一方、 5. 0 AZdm2を超えると形成された電気 Snめっき被膜の表面 が粗雑なものとなり、 ピンホールが多数発生する恐れがあるからである。\n\n【0047】例えば、 希土類系ボンド磁石表面に置換 Cuめっき被膜と電気 Cuめっき被膜 を一つのめっき浴において形成する場合においても、 めっき浴槽は磁石の形状に 応じて種々の浴槽を使用することができる。 めっき浴の pHは 5. 0〜8. 5で あることが望ましい。 5. 0未満であると酸性条件に不安定な希土類系ポンド磁 石に対して悪影響を及ぼす恐れがある一方、 8. 5を超えると形成された置換 C uめっき被膜の密着性が劣る恐れがあるからである。 めっき浴の浴温は 25°C〜\n\n70°Cとすることが望ましい。 25 未満であると形成された置換 Cuめっき被 膜の表面が粗雑なものになる恐れがある一方、 70°Cを超えると浴温管理が難し く、 均一な置換 Cuめっき被膜が形成されない恐れがあるからである。 このよう なめつき浴を用いて置換 C uめっき被膜を形成した後に電気 C uめっき被膜を形 成するに際しては、 電流密度は 0. lAZdm2〜5. OAZdm2とすること が望ましい。 0. lAZdm2未満であると成膜速度が遅くて生産性に劣る恐れ がある一方、 5. 0 AZdm2を超えると形成された電気 Cuめっき被膜の表面 が粗雑なものとなり、 ピンホールが多数発生する恐れがあるからである。 なお、 めっき浴としては希土類系ポンド磁石に対する腐食性と浸透性が低い中性 Cuめ つき浴が望ましく、 とりわけ、 硫酸銅とエチレンジァミン四酢酸と亜硫酸ナトリ ゥムを主成分とする中性 Cu—EDT A浴が望ましい。\n\n【0048】本発明の方法によってリング状ポンド磁石表面に電気めつき被膜を形成した場 合、 ともすれば、 その内側表面に局部的凸部が発生する場合がある。 この現象は 第 1金属の粉末を分散させた樹脂からなる非導電性被膜の主体として使用した榭 脂の硬度が低い場合に散見されることから、 この現象を回避するためには、 非導 電性被膜の主体として使用する樹脂は硬度が高いもの、 具体的には、 樹脂自体の 硬化時のロックウェル硬度が M 80以上のもの、 例えば、 フエノール樹脂 （Ml 10) 、 エポキシ樹脂 （M80) 、 アクリル樹脂 （M80) 、 ポリエステル樹脂 (M80) 、 ポリイミド樹脂 （Ml 28) などを使用することが望ましい。 とり わけ、 このような樹脂の中でも、 ポリイミド樹脂に代表される耐熱性熱硬化性樹 脂、 いわゆる、 スーパ一エンジニアリングプラスチックは、 磁石に熱と荷重が加 わった場合でも、 樹脂部分が軟化してしまって樹脂によって分散されていた第 1 金属の粉末が結合性を獲得し、 その結果、 体積抵抗率が低下して非導電性被膜と しての特性が劣化してしまうといったことを効果的に防止する作用を有する、 即 ち、 非導電性被膜に耐熱性を付与する作用を有する点においてより望ましい。 な お、 複数の樹脂を混合して使用する場合においては、 混合樹脂自体の硬化時の口 ックゥエル硬度が M 80以上となるように個々の樹脂を組み合わせて使用するこ とが望ましい。 例えば、 エポキシ樹脂とポリイミド樹脂との混合樹脂は、 混合樹 脂自体の硬化時のロックウェル硬度が M80以上であり、 相溶性に優れるととも\n\nに、 金属粉末の分散性にも優れ、 さらに、 上記のように耐熱性の点においても優 れることから望ましい混合樹脂といえる。 また、 電気めつき被膜を形成するため のめつき浴に添加される光沢剤、 例えば、 芳香族スルフォンアミドゃ芳香族スル フォンイミドなどのサッカリン系光沢剤、 2—ブチン— 1， 4—ジオールなどの ブチンジオール系光沢剤の添加量を調整することによって、 非導電性被膜表面に 積層形成されためつき被膜の応力を緩和し、 局部的凸部の発生を回避するように してもよい。\n\n【0049】なお、 以上のようにして形成される電気めつき被膜の上に、 更に別の電気めつ き被膜などを積層形成してもよい。 このような構成を採用することによって、 物 品の耐食性や機械的強度などの特性を増強 ·補完したり、 更なる機能性を付与し たりすることができる。\n\n【0050】本発明が適用される物品としての希土類系永久磁石のうち、 ポンド磁石は、 磁 性粉と樹脂バインダ一を主成分とするものであれば磁気的等方性ポンド磁石であ つても磁気的異方性ポンド磁石であってもよい。 また、 樹脂バインダーにより結 合形成されたものの他、 金属バインダーや無機バインダ一などにより結合成形さ れたものであってもよい。 さらに、 バインダーにフィラーを含むものであっても よい。\n\n【0051】希土類系ボンド磁石としては、 種々の組成のものや結晶構造のものが知られて いるが、 これらすべてが本発明の対象となる。\n\n【0052】例えば、 特開平 9一 92515号公報に記載されているような異方性 R_F e 一 B系ポンド磁石、 特開平 8— 203714号公報に記載されているようなソフ ト磁性相 （例えば、 a— Feや Fe3B) とハード磁性相 （Nd2Fe14B) を 有する Nd— Fe— B系ナノコンポジット磁石、 従来から広く使用されている液 体急冷法により作成された等方性 Nd_Fe— B系磁石粉末 （例えば、 商品名： MQP-B * MQ I社製） を用いたボンド磁石などが挙げられる。\n\n【0053】また、 特公平 5— 82041号公報記載の （Fe i—XRX)x_yNy(0. 07 ≤x≤0. 3, 0. 00 l≤y≤0. 2 ) で表される R— F e—N系ポンド磁石 などが挙げられる。\n\n【0054】なお、 希土類系ポンド磁石を構成する磁性粉は、 希土類系永久磁石合金を溶解\n\nし、 铸造後に粉砕する溶解粉砕法、 一度焼結磁石を作成した後、 これを粉砕する 焼結体粉碎法、 C a還元にて直接磁性粉を得る直接還元拡散法、 溶解ジェットキ ヤス夕一で希土類系永久磁石合金のリボン箔を得、 これを粉砕 ·焼純する急冷合 金法、 希土類系永久磁石合金を溶解し、 これをアトマイズで粉末化して熱処理す るアトマイズ法、 原料金属を粉末化した後、 メカニカルァロイングにて微粉末化 して熱処理するメカニカルァロイ法などの方法で得ることができる。\n\n【0055】また、 R— F e—N系ポンド磁石を構成する磁性粉は、 希土類系永久磁石合金 を粉碎し、 これを窒素ガス中またはアンモニアガス中で窒化した後、 微粉末化す るガス窒化法などの方法でも得ることができる。\n\n【0056】本発明の効果は、 希土類系永久磁石を構成する磁性粉の組成、 結晶構造、 異方 性の有無などにより異なるものではない。 従って、 希土類系永久磁石がポンド磁 石であっても焼結磁石であっても、 目的とする効果を得ることができるが、 この 効果はとりわけボンド磁石に対して有益なものとなる。\n\n【0057】また、 複数の希土類系永久磁石を嫌気性接着剤などの接着剤を用いて積層した 積層磁石に対して本発明を適用すれば、 磁石と磁石の間の接着剤厚み部分も含め て積層磁石表面全体に電気めつき被膜を形成することができる。 従って、 磁石と 接着剤との間の接着界面への接着劣化起因物質 （水分など） の浸入を阻止するこ とができるので、 接着劣化防止効果を得ることができる。\n\n【0058】また、 リング状希土類系ポンド磁石は、 自動車などに装着される液体燃料 （ガ ソリン、 軽油、 液体石油ガスなど） の送液ポンプ用モータに組み込まれて使用さ れたりするなど、 液体燃料の存在下を使用環境とする場合があるが、 その表面に 第 1金属の粉末を分散させた樹脂からなる非導電性被膜を形成した後、 非導電性 被膜形成磁石を第 1金属より貴な第 2金属のイオンを含む溶液に浸漬することで 非導電性被膜表面に第 2金属の置換めつき被膜を形成し、 さらに置換めつき被膜 表面に第 3金属の電気めつき被膜を形成することで、 リング状希土類系ボンド磁 石に、 液体燃料に対する優れた耐久性を付与することができる。 この場合、 好適 な第 3金属としては、 液体燃料に対して高い耐食性を発揮するニッケルやスズが 挙げられる。\n\n実施例\n\n【0059】本発明を以下の実験によってさらに詳細に説明するが、 本発明は以下の記載に 何ら限定されるものではない。\n\n【0060】実験 A (リング状希土類系ポンド磁石表面への電気めつき被膜の形成）\n\n【0061】急冷合金法で作製した、 Nd： 12原子％、 F e ： 77原子％、 B： 6原子％、 Co： 5原子％の組成からなる平均長径 150 mの合金粉末にエポキシ樹脂を 2wt %加えて混練し、 686 NZmm2の圧力で圧縮成形した後、 150°Cで 1時間キュアすることによって作製された、 外径 3 OmmX内径 28mmX長 さ 4mmのリング状ポンド磁石 （以下、 磁石体試験片と称する） を用いて以下の 実験を行った。\n\n【0062】実施例 1 ：\n\n【0063】非導電性の亜鉛粉末分散樹脂としてェポローバル （ローバル社製の商品名：亜 鉛粉末の平均粒径は 4 zmで硬化時のロックウェル硬度が M 80のエポキシ樹脂 を主体とする） を使用し、 これをェポロ一バル専用シンナー （ローバル社製の商 品名） で希釈した後 （重量比でェポローバル： シンナー =1 ： 0. 5)、 均一に 攪拌することにより非導電性の亜鉛粉末分散樹脂溶液を調製した。 得られた溶液 をガン口径 1. 5 mmのエアスフ。レ一装置を使用し、 吹付圧力 0. 2MP aの条 件にて磁石体試験片表面全面に吹付け、 スプレー塗装を行った後、 常温 （2 0°C) における 60分間の乾燥と 200°Cにおける 30分間の焼付けを行い、 亜 鉛粉末の分散量が 96重量％である膜厚 15 m (断面観察による） の非導電性 被膜 （体積抵抗率 3Χ 105Ω · cm: J I S— H0505による） を磁石体試 験片表面に形成した。 この亜鉛粉末を分散させた樹脂からなる非導電性被膜を有 する磁石体試験片について、 35 °Cの 5重量％食塩水を噴霧するという塩水噴霧 試験を行ったところ、 500時間経過後も外観に変化が見られた磁石体試験片は 存在しなかった （n=50)。\n\n【0064】25個の亜鉛粉末を分散させた樹脂からなる非導電性被膜を有する磁石体試験 片を容量 2. 8 Lのバレル槽に直径 4mmのアルミナメディア 2. 0Lとともに 投入し、 振幅 0mm、 振動数 6 OH zの条件にて 30分間バレル研磨した。 バレル研磨が施された非導電性被膜を有する磁石体試験片を 3分間超音波水洗\n\nした後、 硫酸ニッケル · 5水和物 240 gZL、 塩化ニッケル · 5水和物 45 g ノ L、 ホウ酸 35 gZLを含み、 炭酸ニッケルで pHを 4. 2に調整した液温 5 5t:のヮット浴に磁石体試験片を浸潰し、 30分間電圧をかけずに非導電性被膜 表面に置換 N iめっき被膜を形成した。 25個の磁石体試験片の内の 5個をこの 時点でヮット浴から取り出し、 形成された置換 N iめっき被膜の膜厚を調べたと ころ、 その平均値は 1 mであった （蛍光 X線観察による）。\n\n【0065】残りの 20個の磁石体試験片について、 その後、 電圧をかけて電流密度 1. 5 AZdm2の条件にて 90分間電気 N iめっき処理を行い、 置換 N iめっき被膜 表面に電気 N iめっき被膜を形成した。\n\n【0066】以上のようにして得られた最表面に電気 N iめっき被膜を有する磁石体試験片 を 3分間超音波水洗した後、 10 O :にて 60分間乾燥させた。\n\n【0067】20個の磁石体試験片の最表面の電気 N iめっき被膜を拡大鏡 （X4) にて 外観検査したところ、 ピンホールや突起や異物付着などを有する不良品は存在せ ず、 全てが均質な被膜で良品と評価された。 非導電性被膜表面に形成された N i めっき被膜の総厚の平均値 （n=5) は 25 であったことから （蛍光 X線観 察による）、 電気 N iめっき被膜の膜厚の平均値 （n=5) は 24^mであるこ とがわかった。\n\n【0068】15個の最表面に電気 N iめっき被膜を有する磁石体試験片に対して温度 6 Ot:x相対湿度 90%の高温高湿条件下に 500時間存置するという耐食性試 験を行ったところ、 いずれの磁石体試験片についても発錡ゃ被膜膨れや局部的凸 部などの外観異常は見受けられなかつた。\n\n【0069】比較例 1 ：\n\n【0070】平均粒径が 4 mの亜鉛粉末 75重量％、 キシレン 22重量％、 ェポミック (三井化学社製の商品名：硬化時のロックウェル硬度が M80の 1液型エポキシ 樹脂） 3重量％を混合し、 均一に攪拌することにより導電性の亜鉛粉末分散樹脂 溶液を調製した。 得られた溶液をガン口径 1. 5 mmのエアスプレー装置を使用 し、 吹付圧力 0. 2 MP aの条件にて磁石体試験片表面全面に吹付け、 スプレー 塗装を行った後、 常温 （20°C) における 60分間の乾燥と 200でにおける 3 0分間の焼付けを行い、 亜鉛粉末の分散量が 96重量％である膜厚 15 / m (断\n\n面観察による） の導電性被膜 （体積抵抗率 5 X 10-χΩ · cm： J I S-H0 505による） を磁石体試験片表面に形成した。 この亜鉛粉末を分散させた樹脂 からなる導電性被膜を有する磁石体試験片について、 35 °Cの 5重量％食塩水を 噴霧するという塩水噴霧試験を行ったところ、 500時間経過後には発鐯した磁 石体試験片が 2個存在した （n=50)。\n\n【0071】実施例 2 ：\n\n【0072】実施例 1と同じ非導電性の亜鉛粉末分散樹脂溶液を使用し、 実施例 1と同じェ 程を経て、 バレル研磨が施された亜鉛粉末を分散させた樹脂からなる非導電性被 膜を有する磁石体試験片を得た。 このバレル研磨が施された非導電性被膜を有す る磁石体試験片を 3分間超音波水洗した後、 実施例 1と同じヮッ卜浴に磁石体試 験片を浸漬した。 実施例 2においては実施例 1と異なり、 浸漬当初から電圧をか けて電流密度 1. 5 AZdm2の条件にて 120分間電気 N iめっき処理を行い、 最表面に電気 N iめっき被膜を形成した。\n\n【0073】以上のようにして得られた最表面に電気 N iめっき被膜を有する磁石体試験片 を 3分間超音波水洗した後、 100°Cにて 60分間乾燥させた。\n\n【0074】20個の磁石体試験片の最表面の電気 N iめっき被膜を拡大鏡 （X4) にて 外観検査したところ、 ピンホールや突起や異物付着などを有する不良品は存在せ ず、 全てが均質な被膜で良品と評価された。 非導電性被膜表面に形成された N i めっき被膜の総厚の平均値 （n=5) は 25 mであった （蛍光 X線観察によ る）。 実施例 2においては非導電性被膜表面に形成された置換 N iめっき被膜の 膜厚は測定できないが、 以上のような良質の電気 N iめっき被膜が最表面に形成 されることは、 その下層に置換 N iめっき被膜が形成され、 その表面全体に導電 性が付与されていることに起因するものであると推察された。\n\n【0075】15個の最表面に電気 N iめっき被膜を有する磁石体試験片に対して温度 6 0°CX相対湿度 90%の高温高湿条件下に 500時間存置するという耐食性試 験を行ったところ、 いずれの磁石体試験片についても発鲭ゃ被膜膨れや局部的凸 部などの外観異常は見受けられなかった。\n\n【0076】比較例 2 ：\n\n【0077】導電性のニッケル粉末分散樹脂としてエレシャット No. 10 EMC (大橋化\n\n学工業社製の商品名：ニッケル粉末の平均粒径は 5 mで硬化時のロックウェル 硬度が M 80のアクリル樹脂を主体とする） を使用し、 これを合成樹脂塗料用シ ンナー No. 5600 (大橋化学工業社製の商品名） で希釈した後 （重量比でェ レシャット ： シンナー =1 ： 0. 5)、 均一に攪拌することにより導電性のニッ ケル粉末分散樹脂溶液を調製した。 得られた溶液をガン口径 1. 5mmのエアス プレー装置を使用し、 吹付圧力 0. 2 MP aの条件にて磁石体試験片表面全面に 吹付け、 スプレー塗装を行った後、 常温 （20 ） における 60分間の乾燥と 2 00でにおける 30分間の焼付けを行い、 ニッケル粉末の分散量が 66重量％で ある膜厚 1 5 m (断面観察による） の導電性被膜 （体積抵抗率 2X 10一1Q * cm : J I S— H0505による） を磁石体試験片表面に形成した。\n\n【0078】実施例 1と同じ工程を経て、 バレル研磨が施されたニッケル粉末を分散させた 樹脂からなる導電性被膜を有する磁石体試験片を得、 このバレル研磨が施された 導電性被膜を有する磁石体試験片を 3分間超音波水洗した後、 実施例 1と同じヮ ット浴に磁石体試験片を浸漬し、 浸漬当初から電圧をかけて電流密度 1. 5AZ dm2の条件にて 120分間電気 N iめっき処理を行い、 最表面に電気 N iめつ き被膜を形成した。\n\n【0079】以上のようにして得られた最表面に電気 N iめっき被膜を有する磁石体試験片 を 3分間超音波水洗した後、 100°Cにて 60分間乾燥させた。\n\n【0080】20個の磁石体試験片の最表面の電気 N iめっき被膜を拡大鏡 （X 4) にて 外観検査したところ、 いずれの被膜についてもピンホール、 突起、 異物付着の少 なくとも一つが観察されるとともにめつきムラが大きく、 全てが不良品と評価さ れた。 導電性被膜表面に形成された N iめっき被膜の総厚の平均値 （n=5) は 25 mであった （蛍光 X線観察による）。 以上の結果は、 比較例 2においては 電気 N iめっき被膜の下層に置換 N iめっき被膜が形成されなかったために、 良 質の電気 N iめっき被膜が形成されるに足る導電性を付与することができなかつ たことに起因するものであると推察された。\n\n【0081】15個の最表面に電気 N iめっき被膜を有する磁石体試験片に対して温度 6 0°CX相対湿度 90%の高温高湿条件下に 500時間存置するという耐食性試 験を行ったところ、 いずれの磁石体試験片についても発錡ゃ被膜膨れや局部的凸\n\n部などの外観異常が発生した。\n\n【0082】実施例 3 ：\n\n【0083】導電性のニッケル粉末分散樹脂としてエレシャット No. 10EMC (大橋化 学工業社製の商品名：ニッケル粉末の平均粒径は 5 で硬化時のロックウェル 硬度が M 80のアクリル樹脂を主体とする） を使用し、 これをサンコート No. 503 (長島特殊塗料社製の商品名：硬化時のロックウェル硬度が M 80のェポ キシ樹脂を主体とする） とともに合成樹脂塗料用シンナー No. 5600 (大橋 化学工業社製の商品名） で希釈するとともに （重量比でエレシャット：サンコー ト ：シンナー =1 : 0. 2 : 0. 5 混合樹脂自体の硬化時のロックウェル硬度 は M80)、 さらにディスパロン #2150 (楠本化成社製の商品名：ァニオン 性分散媒） 0. 5重量％を添加して、 均一に攪拌することにより非導電性のニッ ゲル粉末分散樹脂溶液を調製した。 得られた溶液をガン口径 1. 5 mmのエアス プレー装置を使用し、 吹付圧力 0. 2 MP aの条件にて磁石体試験片表面全面に 吹付け、 スプレー塗装を行った後、 常温 （20で） における 60分間の乾燥と 2 00 における 30分間の焼付けを行い、 ニッケル粉末の分散量が 55重量％で ある膜厚 15 ^m (断面観察による） の非導電性被膜 （体積抵抗率 4 X I 04Ω · cm： J I S-H05.05による） を磁石体試験片表面に形成した。\n\n【0084】実施例 1と同じ工程を経て、 バレル研磨が施されたニッケル粉末を分散させた 樹脂からなる非導電性被膜を有する磁石体試験片を得、 このバレル研磨が施され た非導電性被膜を有する磁石体試験片を 3分間超音波水洗した後、 硫酸銅 · 5水 和物 25 gZL、 エチレンジァミン四酢酸 2ナトリウム 55 gZL、 酒石酸ナト リウム · 2水和物 28. 2 g/L, 硫酸ナトリウム 71 g/L, 亜硫酸ナトリウ ム 25. 2 gZLを含み、 水酸化ナトリウムで pHを 6. 8に調整した液温 4 0での Cuめっき浴に磁石体試験片を浸漬し、 30分間電圧をかけずに非導電性 被膜表面に置換 Cuめっき被膜を形成した。 25個の磁石体試験片の内の 5個を この時点で C uめっき浴から取り出し、 形成された置換 C uめつき被膜の膜厚を 調べたところ、 その平均値は 2 であった （蛍光 X線観察による）。\n\n【0085】残りの 20個の磁石体試験片について、 その後、 電圧をかけて電流密度 1. 5 AZ dm2の条件にて 90分間電気 Cuめっき処理を行い、 置換 Cuめっき被膜\n\n表面に電気 C uめっき被膜を形成した。\n\n【0086】以上のようにして得られた最表面に電気 C uめっき被膜を有する磁石体試験片 を 3分間超音波水洗した後、 100°Cにて 60分間乾燥させた。\n\n【0087】20個の磁石体試験片の最表面の電気 Cuめっき被膜を拡大鏡 （X4) にて 外観検査したところ、 ピンホールや突起や異物付着などを有する不良品は存在せ ず、 全てが均質な被膜で良品と評価された。 非導電性被膜表面に形成された Cu めっき被膜の総厚の平均値 （n=5) は 24 /mであったことから （蛍光 X線観 察による）、 電気 Cuめっき被膜の膜厚の平均値 （n==5) は 22 mであるこ とがわかった。\n\n【0088】15個の最表面に電気 C uめっき被膜を有する磁石体試験片に対して温度 6 0で X相対湿度 90%の高温高湿条件下に 500時間存置するという耐食性試 験を行ったところ、 いずれの磁石体試験片についても若干茶色に変色したが発鑌 や被膜膨れや局部的凸部などは見受けられなかった。\n\n【0089】実施例 4 ：\n\n【0090】実施例 1と同様にして作成したバレル研磨が施された非導電性被膜を有する磁 石体試験片を 3分間超音波水洗した後、 硫酸ニッケル · 5水和物 133 gZL、 硫酸ナトリウム 213 gZL、 塩化アンモニゥム 13 g/L、 ホウ酸 18 gZL を含み、 水酸化ナトリウムで pHを 5. 8に調整した液温 50での低ニッケル高 硫酸塩浴に磁石体試験片を浸漬し、 30分間電圧をかけずに非導電性被膜表面に 膜厚 1 mの置換 N iめっき被膜を形成した （蛍光 X線観察による）。 その後、 電圧をかけて電流密度 1. 5 AZ dm2の条件にて 90分間電気 N iめっき処理 を行い、 置換 N iめっき被膜表面に膜厚 24 の電気 N iめっき被膜を形成し た （蛍光 X線観察による）。\n\n【0091】以上のようにして得られた最表面に電気 N iめっき被膜を有する磁石体試験片 を 3分間超音波水洗した後、 100°Cにて 60分間乾燥させた。 磁石体試験片の 最表面の電気 N iめっき被膜を拡大鏡 （X4) にて外観検査したところ、 ピン ホールや突起や異物付着などの外観異常は見受けられなかった。 また、 この最表 面に電気 N iめっき被膜を有する磁石体試験片に対して温度 60°CX相対湿度 90%の高温高湿条件下に 500時間存置するという耐食性試験を行ったところ、\n\n発鲭ゃ被膜膨れや局部的凸部などの外観異常は見受けられなかった。 さらに、 こ の最表面に電気 N iめっき被膜を有する磁石体試験片に対して 120 のホット プレー卜に 3分間静置するという熱衝撃試験を行つたところ、 非導電性被膜と置 換 N iめっき被膜との密着性不良を原因とする外観異常は見受けられなかった。 実施例 5 ：\n\n【0092】非導電性の亜鉛粉末分散樹脂としてェポローバル （ローバル社製の商品名：亜 鉛粉末の平均粒径は 4 zmで硬化時のロックウェル硬度が M 80のエポキシ樹脂 を主体とする） を使用し、 これを BAN I (丸善石油化学社製の商品名：硬化時 のロックウェル硬度が Ml 28のポリイミド樹脂） とともにェポローバル専用シ ンナー （ローバル社製の商品名） で希釈した後 （重量比でェポローバル： BAN I ：シンナー =1 : 0. 2 : 0. 5 Z混合樹脂自体の硬化時のロックウェル硬度 は M90) 、 均一に攪拌することにより非導電性の亜鉛粉末分散樹脂溶液を調製 した。 得られた溶液をガン口径 1. 5 mmのエアスプレー装置を使用し、 吹付圧 力 0. 2 MP aの条件にて磁石体試験片表面全面に吹付け、 スプレー塗装を行つ た後、 常温 （20で） における 60分間の乾燥と 200でにおける 30分間の焼 付けを行い、 亜鉛粉末の分散量が 77重量％である膜厚 10/ m (断面観察によ る） の非導電性被膜 （体積抵抗率 2X 106Q * cm: J I S— H0505によ る） を磁石体試験片表面に形成した。\n\n【0093】この亜鉛粉末を分散させた棚 からなる非導電性被膜を有する磁石体試験片に 対し、 実施例 1と同様にしてバレル研磨を行った。 バレル研磨が施された非導電 性被膜を有する磁石体試験片を 3分間超音波水洗した後、 実施例 1と同じ工程を 経て、 非導電性被膜表面に膜厚 l ^mの置換 N iめっき被膜を形成し、 さらに置 換 N iめっき被膜表面に膜厚 24 //mの電気 N iめっき被膜を形成した （蛍光 X 線観察による）。\n\n【0094】以上のようにして得られた最表面に電気 N iめっき被膜を有する磁石体試験片 を 3分間超音波水洗した後、 100 にて 60分間乾燥させた。 磁石体試験片の 最表面の電気 N iめっき被膜を拡大鏡 （X4) にて外観検査したところ、 ピン ホールや突起や異物付着などの外観異常は見受けられなかった。 また、 この最表 面に電気 N iめっき被膜を有する磁石体試験片に対して温度 60°CX相対湿度\n\n9 0 %の高温高湿条件下に 5 0 0時間存置するという耐食性試験を行ったところ、 発鲭ゃ被膜膨れや局部的凸部などの外観異常は見受けられなかった。 さらに、 こ の最表面に電気 N iめっき被膜を有する磁石体試験片に対して 1 2 O tのホット プレートに 3分間静置するという熱衝撃試験を行つたところ、 非導電性被膜と置 換 N iめっき被膜との密着性不良を原因とする外観異常は見受けられなかった。 また、 この最表面に電気 N iめっき被膜を有する磁石体試験片 （以下、 サンプ ルと称する） に対し、 ガソリン耐久性試験として次の試験を行った。 サンプル 3 個を市販のレギュラーガソリン 1 2 mLとともに内容積 5 O mLの耐圧密閉容器 に収容して蓋を締結した。 その後、 この耐圧密閉容器をウォー夕一バス （恒温水 槽） に収納し、 8 0 にて 2時間保温した後 （ガソリンの蒸気圧により容器内圧 は約 3 0 0 k P aとなる）、 耐圧密閉容器をウォーターバスから取り出し、 大気 中で 1 2時間保持するという操作を 1サイクルとし、 この操作を 5サイクル、 1 5サイクル、 3 0サイクル、 5 0サイクル行った後のサンプルについて、 寸法変 化 （外径と内径と高さ）、 重量変化、 圧環強度 （リングの中心線に垂直方向から 加重をかけ、 リングが破壊したときの加重） 変化を調べた。 その結果、 サンプル は、 上記の操作を 5 0サイクル行った後も、 いずれの評価項目に関しても特段の 変化は観察されず、 ガソリンに対して優れた耐久性を発揮した。 磁気特性につい ては僅かに劣化したが、 実用上問題になる程度のものではなかった。 なお、 磁石 体試験片そのものに対し、 以上のガソリン耐久性試験を行った場合、 磁石体試験 片は、 樹脂バインダーがガソリンにより膨潤したことで、 寸法増加が顕著であつ た。\n\n【0095】実施例 6 ：\n\n【0096】実施例 5と同様にして作成したバレル研磨が施された非導電性被膜を有する磁 石体試験片を 3分間超音波水洗した後、 実施例 4と同じ工程を経て、 非導電性被 膜表面に膜厚 1 mの置換 N iめっき被膜を形成し、 さらに置換 N iめっき被膜 表面に膜厚 2 4 mの電気 N iめっき被膜を形成した （蛍光 X線観察による）。 以上のようにして得られた最表面に電気 N iめっき被膜を有する磁石体試験片 を 3分間超音波水洗した後、 1 0 0 にて 6 0分間乾燥させた。 磁石体試験片の 最表面の電気 N iめっき被膜を拡大鏡 （X 4 ) にて外観検査したところ、 ピン\n\nホールや突起や異物付着などの外観異常は見受けられなかった。 また、 この最表 面に電気 N iめっき被膜を有する磁石体試験片に対して温度 60°CX相対湿度 90%の高温高湿条件下に 500時間存置するという耐食性試験を行ったところ、 発鲭ゃ被膜膨れや局部的凸部などの外観異常は見受けられなかった。 さらに、 こ の最表面に電気 N iめっき被膜を有する磁石体試験片に対して 120\" のホット プレートに 3分間静置するという熱衝撃試験を行つたところ、 非導電性被膜と置 換 N iめっき被膜との密着性不良を原因とする外観異常は見受けられなかった。 実験 B (透明アクリル板表面への電気めつき被膜の形成）\n\n【0097】小型振動バレル （チップトン社製： VM— 10) に、 縦 60mmx横 20m mx厚さ 2mmの透明ァクリル板 5枚と容積にして 2 L分のアルミナメディァ\n\n【0098】(チップトン社製： PSc/)4) を装填し、 透明アクリル板の表面研磨を 30分間 行った。 次に表面研磨が施された透明ァクリル板をァセトン中に 1分間浸漬して 表面脱脂した後、 自然乾燥させた。\n\n【0099】非導電性の亜鉛粉末分散樹脂としてェポロ一バル （ローバル社製の商品名：亜 鉛粉末の平均粒径は 4 / m) を使用し、 これをェポロ一バル専用シンナー （ロー バル社製の商品名） で希釈した後 （重量比でェポロ一バル：シンナー =1 ： 0. 7 )、 均一に攪拌することにより非導電性の亜鉛粉末分散樹脂溶液を調製した。 得られた溶液をガン口径 1. 2 mmのエアスプレー装置を使用し、 吹付圧力 0. 2 MP aの条件にて透明アクリル板表面全面に吹付け、 スプレー塗装を行った後、 常温 （20°C) における 60分間の乾燥と 200°Cにおける 30分間の焼付けを 行い、 亜鉛粉末の分散量が 96重量％である膜厚 15 m (断面観察による） の 非導電性被膜 （体積抵抗率 2X 105Q * cm : J I S—H0505による） を 透明ァクリル板表面に形成した。\n\n【0100】小型振動バレル （チップトン社製： VM— 10) に、 工程 1で得られた表面に 非導電性被膜が形成された透明ァクリル板 5枚と容積にして 2 L分のアルミナメ ディア （チップトン社製： PS【0101】表面研磨が施された非導電性被膜を有する透明ァクリル板を、 硫酸ニッケル · 5水和物 240 gZL、 塩化ニッケル\' 5水和物 45 gZL、 ホウ酸 35 gZL\n\nを含み、 塩基性炭酸ニッケルで PHを 4. 2に調整した液温 55°Cのワット浴に 浸漬し、 30分間電圧をかけずに非導電性被膜表面に置換 N iめっき被膜を形成 した。 5枚の透明アクリル板の内の 2枚をこの時点でワット浴から取り出し、 形 成された置換 N iめっき被膜の膜厚を調べたところ、 その平均値は 1 であつ た （断面観察による）。 このようにして形成された置換 N iめっき被膜は、 金属 N iとしての表面性状を呈し、 体積抵抗率が 5 X 10—6Ω · cmであった。 従 つて、 装飾性や帯電防止などのための表面導電性などを付与する目的においては、 この段階のものであっても実用上満足できるに足ることがわかった。\n\n【0102】残りの 3枚の透明アクリル板について、 その後、 電圧をかけて電流密度 1. 5 AZdm2の条件にて 90分間電気 N iめっき処理を行い、 置換 N iめっき被膜 表面に電気 N iめっき被膜を形成した。\n\n【0103】以上のようにして得られた最表面に電気 N iめっき被膜を有する透明アクリル 板を 3分間超音波水洗した後、 100°Cにて 60分間乾燥させた。\n\n【0104】3枚の透明アクリル板の最表面の電気 N iめっき被膜を拡大鏡 （X4) にて 外観検査したところ、 ピンホールや突起や異物付着などを有する不良品は存在せ ず、 全てが均質な被膜で良品と評価された。 非導電性被膜表面に形成された N i めっき被膜の総厚の平均値 （n=3) は 25 mであったことから （断面観察に よる）、 電気 N iめっき被膜の膜厚の平均値 （n = 3) は 24 mであることが わかった。\n\n【0105】実験 C (木製マスコットバット表面への電気めつき被膜の形成）\n\n【0106】長さ 24 OmmX直径約 1 Ommの木製マスコットバッ卜に対して実験 Bと 同様にしてその表面に均一で緻密な電気 N iめっき被膜を優れた密着性でもって 形成した。\n\n【0107】実験 D (ダンポール紙表面への電気めつき被膜の形成）\n\n【0108】縦 6 Ommx横 20 mm X厚さ 2 mmのダンポール紙に対して実験 Bと同様 にして （但し、 小型振動バレルを使用した 2回の表面研磨工程は省略） その表面 に均一で緻密な電気 N iめっき被膜を優れた密着性でもって形成した。\n\n【0109】実験 E (透明ガラス板表面への電気めつき被膜の形成）\n\n【0110】縦 6 Ommx横 20 mmx厚さ 2 mmの透明ガラス板に対して実験 Bと同様\n\nにしてその表面に均一で緻密な電気 N iめっき被膜を優れた密着性でもって形成 した。\n\n【0111】実験 F (アルミニウム板表面への電気めつき被膜の形成）\n\n【0112】縦 6 0 mm X横 2 0 mm X厚さ 2 mmのアルミニウム板に対して実験 Bと同 様にしてその表面に均一で緻密な電気 N iめっき被膜を優れた密着性でもって形 成した。\n\n【0113】実験 G (マグネシウム合金板表面への電気めつき被膜の形成）\n\n【0114】縦 6 O mm X横 2 0 mm X厚さ 2 mmのマグネシウム合金板に対して実験 B と同様にしてその表面に均一で緻密な電気 N iめっき被膜を優れた密着性でもつ て形成した。 産業上の利用可能性\n\n【0115】本発明によれば、 物品の表面材質や表面性状に依存することなくその表面に均 一で緻密な電気めつき被膜を優れた密着性でもって形成する方法が提供される。', '【0001】在物品表面形成电镀膜的方法技术领域\n\n  【0002】本发明涉及一种在制品的表面上形成均匀且致密的电镀膜的方法，其具有优异的粘附性，而与制品的表面材料或表面性质无关。 背景技术\n\n  【0003】为了赋予物品装饰性，耐候性，抗静电性，电磁波屏蔽性，抗菌性，耐冲击性等表面导电性，通常在表面形成金属被膜。 从一开始就已经完成了。 尽管形成金属涂层的方法多种多样，但是通过电镀形成电镀涂层的方法因其适于大规模生产而被广泛使用。\n\n  【0004】然而，为了在制品表面上形成电镀膜，制品表面需要导电性。 因此，不可能在由诸如塑料，木材，纸，玻璃，陶瓷，橡胶和混凝土之类的非导电材料制成的制品的表面上直接形成电镀膜。 在某些情况下，希望在由诸如镁，铝和钛之类的金属制成的制品（例如手机和笔记本个人计算机外壳）的表面上形成金属涂层，但是镁是最基础的金属之一。 在那儿。 因此，即使在表面上形成电镀膜，一旦将其浸入电镀浴中，也会发生快速位移的电镀反应，从而难以形成良好的电镀膜。 在那儿。 铝和钛是高度可氧化的金属，它们的表面通常覆盖有非常致密的金属氧化物膜。 因此，尽管这些金属具有低的离子化趋势，但由于它们具有高的离子化趋势，因此难以进行电镀处理。 如果去除存在于表面上的金属氧化物膜，则可以形成电镀膜，但是需要特殊的蚀刻技术，并且在去除金属氧化物膜之后，再次去除金属氧化物膜。 有必要在电镀前进行电镀工艺\n\n 有限制，所以必须说存在实际问题。 通过浸泡在包含氢氧化钠和氢氧化锌的溶液中，在强碱性环境中进行蚀刻，并且同时形成锌置换镀膜。 还有一种通过形成板坯的过程来进行电镀处理的方法，但是整个过程很复杂。\n\n  【0005】此外，当尝试在木质蝙蝠，砖头和压铸产品等物品的表面形成均匀的电镀膜时，表面上有孔，细小沟槽和不规则处， 另一方面，不仅要解决如何赋予导电性的问题，而且还必须解决如何确保物品表面的平滑性的问题。\n\n  【0006】此外，由高腐蚀性材料（例如镁等金属）制成的物品在进行带电处理时可能会腐蚀。 形成涂膜有困难。\n\n  【0007】在尝试通过使用已知技术解决上述问题的情况下，在JP-A-61-210183中描述了其中金属粉末分散在制品表面上的树脂。 在形成由以下材料制成的树脂涂层之后，在该树脂涂层的表面上形成化学镀膜的方法： 可以想象的。 然而，化学镀膜是通过在还原剂的作用下将镀液中的金属离子还原而形成的膜，以使金属沉积在镀敷对象物的表面上，因此附着在镀敷对象物上。 除了性能差之外，其成膜效率也差。 还存在通过使用钯催化剂或铂催化剂来提高膜形成效率的方法，但是该方法不能避免成本增加。 另外，不可否认的是，源自化学镀膜中所含的还原剂的杂质对表面上的电镀膜的形成有不利影响。\n\n  【0008】因此，本发明的目的是提供一种在不依赖于制品的表面材料和表面性质的情况下形成在表面上具有优异粘附性的均匀且致密的电镀膜的方法。 去做。 发明内容\n\n  【0009】考虑到以上几点，本发明人进行了各种研究并完成了本发明。\n\n 2.根据权利要求1所述的在光亮的物品的表面上形成电镀涂层的方法，其特征在于，在形成由架子构成的树脂涂层之后，在架子上将第一金属的粉末分散在物品的表面上。 通过将形成树脂膜的物品浸入含有比第一金属具有更高电势的第二金属离子的溶液中，在树脂涂层表面上形成第二金属置换镀膜。 其特征在于在其上形成第三金属的电镀膜。 权利要求2所述的形成方法，其特征在于，在权利要求1所述的形成方法中，所述树脂膜为非导电膜。\n\n  【0010】此外，根据权利要求3所述的成形方法，其特征在于，在根据权利要求2所述的成形方法中，所述物品是稀土类永磁体。\n\n  【0011】此外，根据权利要求4所述的成形方法，其特征在于，在根据权利要求3所述的成形方法中，所述稀土类永磁体是粘结磁体。\n\n  【0012】此外，在根据权利要求5的形成方法中，在根据权利要求2的形成方法中，非导电膜的体积电阻率为1×104Ω·cm。 以上是功能。\n\n  【0013】此外，在根据权利要求6的成形方法中，在根据权利要求1的成形方法中，第一金属粉末在树脂涂层中的分散量为50重量％至99重量％。 其特征在于重量％。\n\n  【0014】此外，在根据权利要求7的成形方法中，在根据权利要求1的成形方法中，第一金属的粉末的平均粒径为0.001m至30m。 它的特点是\n\n  【0015】此外，根据权利要求8所述的形成方法，其特征在于，在根据权利要求1所述的形成方法中，所述树脂膜的厚度为1 / m至100m。 去做。 此外，根据权利要求9所述的形成方法，其特征在于，在根据权利要求1所述的形成方法中，所述第一金属为锌，所述第二金属为镍或锡。\n\n  【0016】此外，根据权利要求10所述的形成方法，其特征在于，在根据权利要求1所述的形成方法中，所述第一金属为Nigel，所述第二金属为铜。  .. 技术方案11所述的成形方法的特征在于，技术方案1所述的成形方法中，所述第二金属和所述第三金属为相同的金属。\n\n 此外，根据权利要求12的形成方法与根据权利要求11的形成方法相同，其中，形成置换镀膜的步骤和形成电镀膜的步骤在一个镀浴中进行。 它的特点是表演。\n\n  【0017】此外，在根据权利要求13的形成方法中，在根据权利要求1的形成方法中，替换膜的膜厚度为0.05m至2 // m 它的特点是\n\n  【0018】此外，本发明的物品的特征在于，通过如权利要求14所述的权利要求1所述的形成方法在表面上形成电镀膜。 去做。 此外，如权利要求15所述，在本发明的制品表面上形成替代涂层的方法是在制品表面上形成由树脂制成的ST油涂层，其中分散有第一金属的粉末。 之后，该树脂被膜形成物的特征在于，通过将树脂被膜形成物浸渍在含有比第一金属具有更高电位的第二金属的离子的溶液中，从而在树脂膜的表面上形成第二金属的置换膜。  ..\n\n  【0019】此外，本发明的物品的特征在于，通过如权利要求16所述的根据权利要求15的形成方法在表面上形成置换涂层。 去做。 此外，如权利要求17所述，在本发明的表面上具有镀层的稀土类永磁体包含树脂，其中第一金属的粉末分散在稀土类永磁体的表面上。 在形成非导电膜之后，将非导电膜形成磁体浸入包含比第一金属更贵重的第二金属的离子的溶液中，以形成在非导电膜的表面上置换有第二金属的膜。 其特征在于，其通过在镀膜的表面上进一步错位形成第三金属的镀膜来制造。\n\n  【0020】此外，通过将第一金属的粉末分散在权利要求18所述的稀土基永磁体的表面上，来获得在其表面上具有本发明的电镀膜的稀土基永磁体。 形成由树脂制成的非导电涂层，并且通过比第一金属更贵重的第二金属的置换镀膜在非导电涂层的表面上形成第三金属的电镀膜。 和\n\n  【0021】此外，在表面上具有本发明的置换涂层的稀土类永磁体是权利要求19所述的在其表面上分散有第一金属的粉末的稀土类永磁体。 形成由树脂制成的非导电膜，并且该非导电膜的表面比第一金属更贵重。\n\n 形成属置换涂层。\n\n  【0022】此外，如权利要求20所述，在表面具有本发明的非导电性被膜的稀土类永磁体是在稀土类永磁体的表面分散有第1金属的粉末的树脂。 由非导电涂层形成。 实施本发明的最佳模式\n\n  【0023】在本发明的物品的表面上形成电镀涂层的方法包括：形成由树脂制成的树脂涂层，其中第一金属的粉末分散在物品的表面上； 通过将其浸入含有比第一金属具有更高电势的第二金属离子的溶液中，在树脂膜的表面上形成具有第二金属位移的膜，并在第二位移膜的表面上电镀第三金属。 其特征在于形成涂膜。\n\n  【0024】在本发明的在物品表面上形成电镀涂层的方法中，在物品表面上形成由其中分散有第一金属的粉末的架子组成的树脂涂层，然后形成该树脂涂层的表面。 通过使用源自存在于树脂附近的第一金属的粉末的置换镀覆反应，在树脂涂膜的整个表面上形成密合性优异的第二金属的置换镀膜。 结果，导电性赋予制品的整个表面，使得可以在置换镀膜的表面上形成具有优异粘附性的第三金属的均匀且致密的电镀膜。 成为。 因此，不管制品的表面材料和表面纹理如何，均一且精确的电镀膜在由所有材料例如塑料，木材，纸张，玻璃，陶瓷，橡胶，混凝土和金属制成的制品表面上都是优异的。 它可以形成具有良好的附着力。\n\n  【0025】以下，将逐步描述在本发明的制品表面上形成电镀涂层的方法。 \n\n【0026】处理1：\n\n  【0027】首先，在制品的表面上形成由树脂制成的树脂膜，其中分散有第一金属的粉末。 作为主要构成树脂涂层的树脂，例如，可以使用热固性树脂。 其具体实例包括酚醛树脂，环氧树脂，三聚氰胺树脂，丙烯酸树脂，聚酯树脂，聚氨酯树脂，聚酰亚胺树脂，苯乙烯丙烯酸树脂及其混合树脂。\n\n 对分散在树脂膜中的第一金属的粉末的种类没有特别限制，但是为了在随后的步骤中引起取代反应，第一金属的碱电势低于第二金属的碱电势。 必须拥有。 因此，考虑到与第二金属的电势差来适当地选择第一金属。 第一金属和第二金属的组合的具体实例包括作为第一金属的锌和作为第二金属的镍或锡的组合，或者作为第一金属的镍和作为第二金属的铜的组合。  ..\n\n  【0028】由其中分散有第一金属的粉末的树脂制成的树脂涂层可以是导电涂层或非导电涂层，但是它是高腐蚀性材料，例如诸如镁的金属。 理想的是，如后所述，在由（1）制成的制品的表面上形成的树脂涂层或在高腐蚀性稀土永磁体的表面上形成的树脂涂层是非导电涂层。 即使在置换镀覆处理或电镀处理期间树脂涂膜表面被腐蚀，也可能在通过置换镀膜形成在树脂覆膜表面上的树脂覆膜表面上形成针孔，划痕等。 这是因为即使发生缺陷并且树脂涂膜的表面通过该缺陷腐蚀，也可以防止腐蚀通过树脂涂膜的内部传播到物品的表面。\n\n  【0029】顺便提及，以Nd-Fe-B基永磁体为代表的稀土基永磁体，例如R_Fe_B基永磁体，是由资源丰富且廉价的材料制成的 由于其高磁性，它已在当今的各个领域中使用。\n\n  【0030】近年来，在使用稀土类永磁体的电子工业和家用电器工业中，组件的小型化和小型化正在发展。 我压力很大。\n\n  【0031】从这一观点出发，主要由磁性粉末和树脂粘合剂组成并且易于成型的聚焦磁体引起了人们的注意，并且已经在各种领域中得到实际应用。\n\n  【0032】稀土永磁体含有R，该R在大气中容易被氧化和腐蚀。 因此，当其未经表面处理而使用时，由于少量的酸，碱和湿气的影响，腐蚀从表面进行，这导致磁性能和变化的劣化。 将被邀请。 此外，如果将具有锚固件的磁体结合到诸如磁路的装置中，则锚固件会散布并污染外围部件。\n\n  【0033】为了解决该问题，在磁体表面上形成作为耐腐蚀膜的电镀膜。\n\n 已经进行了尝试。 然而，如果要在池塘磁体的表面上直接形成电镀膜，则由形成磁体表面的树脂粘合剂和这些磁体之间的树脂部分所绝缘的磁体粉末的电导率较低。 在某些情况下，不可能形成均匀且致密的涂层，结果，可能会出现针孔（未镀部分），这会导致开裂。\n\n  鉴于以上几点，作为在对粘结磁体的整个表面赋予导电性之后形成电镀膜的方法，例如，日本专利第2 7 1 9 6 5 8号（日本专利公开第4 1 7号） 日本专利公开No.6095）提出了一种方法，其中将树脂和导电材料粉末的混合物施加到粘结磁体的表面上以形成导电树脂膜，然后进行电镀。 但是，从微观的观点来看，该方法不一定给整个树脂表面提供足够的导电性，因此不能否认表面上存在导电性低的部分。 存在无法形成均匀且致密的电镀膜的问题。 另外，由于形成在磁体表面上的树脂膜是导电的，所以如果在电镀期间树脂膜表面腐蚀，则腐蚀将通过膜内部的导电部分而腐蚀到磁体表面。 还有一个问题。\n\n  【0035】此外，上述专利公开还提出了一种在对粘结磁体的表面进行化学镀之后进行化学镀的方法。 例如，作为处理液的溶剂的水和包含在处理液中的各种成分可能残留在磁体的孔中，从而导致磁体的腐蚀。 很难说它具有出色的附着力。\n\n  【0036】因此，由于到目前为止提出的上述方法不能获得令人满意的结果，因此提出了一种用于在粘结磁体的表面上形成电镀膜的新方法。 期待已久。 根据本发明，可以在粘结磁体的表面上形成均匀且致密的电镀膜，并且具有优异的粘附性，并且可以通过将非导电膜用于粘结磁体表面上形成的树脂膜来形成。  ，可以赋予粘结磁铁优异的耐腐蚀性。\n\n  【0037】由其中分散有第一金属的粉末的树脂制成的非导电涂膜例如是其中分散有第一金属的粉末的非导电树脂本身，并且，如果需要， 将通过用有机溶剂稀释树脂而制备的溶液作为处理液喷雾到物品的表面。\n\n 通过安装产品或将物品浸入用于浸涂的处理液中，然后干燥将其形成。 其中分散有金属粉末的非导电树脂是可商购的，并且可以容易地获得。 即使其中分散有第一金属粉末的树脂是导电的，也应通过添加有机分散介质以均匀地分散和分离各个金属粉末，使处理液不导电。 你也可以 在这种情况下，作为有机分散介质，是阴离子分散介质（脂肪族多元羧酸，聚醚聚醚羧酸盐，高分子量聚酯酸多元胺盐，高分子量多元羧酸长链胺盐等）， 非离子分散介质（聚氧乙烯烷基醚，脱水山梨糖醇酯，磺酸盐，铵盐等羧酸盐），聚合物分散介质（水溶性环氧羧酸盐，磺酸盐，铵盐等） 考虑到与金属粉末的亲和力和成本，优选使用盐，例如苯乙烯-丙烯酸共聚物，nikka等。 处理液本身可以是导电的，只要它是能够形成非导电涂层的处理液即可。 在制备处理液时，可以适当地使用分散机，例如极磨机，磨碎机或砂磨机。\n\n  【0038】为了使树脂膜中的金属粉作为置换反应的起点并在树脂膜的整个表面上形成置换镀膜，金属粉应均匀且富于树脂膜表面及其附近。 有利地存在。 因此，从这一观点出发，期望制备处理液，使得分散在树脂涂膜中的金属粉末的量为50重量％以上。 尽管在树脂膜中分散的金属粉末的量的上限没有限制，但是通常难以制备其中金属粉的分散量超过99重量％的用于形成树脂膜的处理液。 存在问题（当金属粉末在处理液中凝结并沉降时，由于处理液的粘度增加而产生的问题和处理不良等问题）。 因此，在制造中，分散在树脂涂层中的金属粉末的量的上限为99重量％。\n\n  【0039】为了制备使金属粉末均匀分散的处理液，金属粉末的平均粒径为0.001！ 理想的是〜30m，理想的是0.01〜12m，理想的是2μm〜10m。 由树脂制成的树脂涂层，其中分散有如上所述形成的第一金属粉末。\n\n 当膜是不导电的膜时，由于膜是不导电的，所以即使膜的表面被腐蚀，也可以防止腐蚀从膜内部传播到制品表面。 它具有赋予制品本身耐腐蚀性的作用。 该效果包括涂层的自修复作用（当第一金属为锌时，第一金属的腐蚀化合物（ZnC12的腐蚀）·4Zn（OH）2和 Z n O等），并且由于树脂的溶胀而导致体积增大，即使膜中存在诸如针孔和划痕之类的缺陷，缺陷也被掩埋并牺牲了第一金属的腐蚀防护性能。 认为效果也在起作用。 为了使该效果更可靠，期望非导电涂层的体积电阻率为1×104Ω·cm以上。 可以将上述有机分散介质添加到处理液中，以抑制金属粉在处理液中的凝结/沉淀，并增强金属粉的分散性以提高体积电阻率。 当制品是稀土永磁体时，当将其掺入研钵中使用时，在其表面上具有高体积电阻率的非导电涂层的磁体在磁体内部将产生较少的涡电流。 因此，由于涡电流引起的发热而引起的热退磁也较小，因此有价值的是可以抑制电动机效率的降低。 当多个这样的磁体堆叠并结合到电动机中时，该值特别高。\n\n  【0040】除充分发挥上述效果外，树脂涂层的表面应光滑，金属粉末应均匀，丰富地存在于树脂涂层的表面及其附近，以使树脂涂层的整个表面均匀。 为了形成这种位移的膜，期望树脂涂膜的膜厚为1m〜100m。 然而，如果树脂膜的膜厚度增加，则可能不利地影响均匀电镀膜的形成。 因此，考虑到这一点以及当制品是稀土永磁体时磁体的有效体积，树脂涂层的膜厚度的上限更优选为30m。\n\n  【0041】为了在执行形成由分散有第一金属的粉末的树脂制成的树脂涂层的步骤之前，提高制品表面与树脂涂层之间的界面处的粘合性， 已知的清洁可以通过使表面脱脂来执行，或者可以通过滚筒抛光来赋予锚固效果。\n\n  【0042】步骤2： \n\n接下来，在步骤1中，将其上形成有树脂涂层的物品浸入含有比第一金属的电位更高的第二金属离子的溶液中，从而用第二金属代替树脂涂层的表面。 拍电影。 第二金属置换涂层具有赋予制品整个表面导电性的功能，并且还防止第一金属的粉末从树脂涂层脱落，从而有助于制品表面清洁度的提高。  .. 该步骤可以根据用于形成置换镀膜的常规方法进行，但是从确保随后的步骤中的足够的导电性以形成均匀且致密的第三金属电镀膜的角度考虑。 因此，期望形成膜厚度为0.05m以上的膜。 在形成替换涂层之前，在表面上形成树脂涂层，以使树脂涂层的表面光滑并且暴露出均匀分散在树脂涂层中的第一金属粉末的活性表面。 物品可以被滚筒抛光。 尽管对具有位移的膜的膜厚度的上限没有特别限制，但是考虑到制造成本，其优选为2μm或更小。 应当注意，出于赋予制品装饰性或抗静电性的表面导电性等的目的，即使在表面具有取代涂层的该步骤实际上也是令人满意的。 可以获得效果。\n\n  【0043】步骤3：\n\n  【0044】最后，在步骤2中形成的替代镀膜的表面上形成第三金属的电镀膜。 该步骤可以根据用于形成电镀膜的常规方法来执行。 如上所述，必须考虑第一金属和第二金属之间的电势差，但是必须考虑相对于第二金属的第三金属。 但通常形成为电镀涂层，例如镍，铜，锡，钴，锌，铬，银，金，铅，铂等。 被用作第三种金属。 因此，即使第二金属和第三金属是相同的金属也没有问题。 如果第二金属和第三金属是相同的金属，也就是说，如果形成电镀膜的金属和形成电镀膜的金属是相同的金属，则形成形成替代膜的膜。 在一个电镀浴中进行形成电镀膜的步骤2和步骤3是很方便的。 就是说，例如，在将镀有镀有第一金属粉末的树脂的树脂涂层形成在其表面上的浸入开始时，\n\n 当不施加时，进行置换镀覆反应以形成置换镀膜，然后可以通过施加电压来形成电镀膜。 即使是从浸渍开始就施加电压的情况下，在浸渍的初期，也将在表面上分散有第一金属的粉末的，由树脂构成的树脂被膜浸渍于镀浴中。 由于树脂涂层的体积电阻率高，因此由于第一金属和第二金属之间的电势差，首先在树脂涂层的表面上发生置换涂层反应，并形成替代涂层。 结果，将导电性赋予制品的整个表面，并且在置换镀膜的表面上形成均匀且致密的电镀膜。 可以根据目的适当地设置电镀膜的厚度，但是当制品是稀土永磁体时，据说可以确保磁体的有效体积，并且表现出优异的耐腐蚀性。 从观点来看，电镀膜的厚度优选为10m至30m。\n\n  【0045】例如，当在一个镀浴中在稀土结合磁体的表面上形成替代Ni镀膜和电Ni镀膜时，根据磁体的形状使用各种镀浴。 能够。 作为镀浴，可以使用瓦特浴，氨基磺酸浴，木材浴等公知的镀浴。 为了在由分散有第一金属的粉末的树脂制成的非导电涂层的表面上形成具有优异粘附性的置换镀镍膜，例如，使用低镍高硫酸盐浴。  1期望抑制金属与镍之间的过度替代效率（替代Ni镀膜的沉积率）。 合适的低镍高硫酸盐浴为5水合硫酸镍100克/升至70克ZL，硫酸钠160克ZL至270克/升，氯化铵8克 浸浴由ZL〜l 8 g / L和硼酸13 g ZL S 3 g / L组成。 期望电镀浴的pH为4.0至8.0。 如果小于4.0，则可能对在酸性条件下不稳定的稀土类池塘磁铁产生不利影响，而如果超过8.0，则形成的置换Ni镀膜的密合性可能变差。 因为有。 此外，当镀浴的pH设置为4.0至8.0时，具有比Ni低的碱电势的第一金属被快速洗脱以形成粗糙的替代Ni镀膜。 目的还在于有效地防止对与在表面上形成的电Ni镀膜的粘附的不利影响。 电镀浴的浴温度优选为30：至70。 在30°C以下形成的取代基\n\n 这是因为Ni镀膜的表面可能是粗糙的，但是如果超过70℃，则难以控制浴温，并且可能无法形成均匀的置换Ni镀膜。 当使用这样的镀浴形成替代Ni镀膜之后形成电Ni镀膜时，电流密度为0.2A / dm2至20AZdm2。 希望这样做。 如果小于0.2 AZdm2，则成膜速度可能变慢，生产率可能变差；而如果大于2 OA / dm2，则形成的Ni Ni镀膜的表面可能会劣化。 这是因为它变得粗糙并且可能会出现许多针孔。 尽管将电解Ni板用作阳极，但是期望使用含有S的镍片作为电解Ni板，以稳定Ni的洗脱。\n\n  【0046】例如，即使在一个镀浴中在稀土类粘结磁铁的表面上形成替代Sn镀膜和电Sn镀膜时，根据磁铁的形状，也可以使用各种镀浴。 它可以。 期望镀浴的pH为3.5至9.0。 如果小于3.5，则可能会对在酸性条件下不稳定的稀土池磁体产生不利影响，而如果大于9.0，则形成的镀锡涂层的附着力可能较差。 因为有。 镀浴的浴温应为15°C至35°C。 如果温度低于15℃，则形成的用于替代Sn镀的Sn膜的表面可能是粗糙的，而如果超过35℃，则难以控制熔池温度并且不能形成均匀位移的Sn镀膜。 因为有恐惧。 当使用这种制革浴形成置换式Sn镀膜后形成Sn镀膜时，电流密度为0.18（11112至5。OAZdm2。 如果小于0.1 AZdm2，则沉积速率可能会变慢并且生产率可能会降低；而如果大于5.0 AZdm2，则会形成镀锡的电沉积 这是因为涂层的表面变得粗糙并且可能出现许多针孔。\n\n  【0047】例如，即使在一个镀浴中在稀土结合磁体的表面上形成替代Cu镀膜和电Cu镀膜的情况下，取决于磁体的形状，也可以使用各种镀浴。 它可以。 期望镀浴的pH为5.0至8.5。 如果小于5.0，则可能对在酸性条件下不稳定的稀土池磁体产生不良影响，而如果超过8.5，则形成的置换Cu镀膜的密合性可能变差。 因为有。 电镀浴的浴温为25°C〜\n\n 70℃是理想的。 如果小于25，则形成的Cu膜的表面有时会变得粗糙，而如果超过70℃，则难以控制浴温，有时无法形成均一的Cu膜。 因为有。 在使用这种鞣制浴形成置换型Cu镀膜后，形成Cu电镀膜时，电流密度应为0. lAZdm2至5. OAZdm2。 是可取的。 如果小于0.1AZdm2，则成膜速度慢，生产率降低；另一方面，如果大于5.0AZdm2，则形成的电镀铜膜的表面变粗糙。 这是因为可能会出现大量针孔。 镀浴优选为中性Cu镀浴，其对稀土池磁体具有低腐蚀性和渗透性，并且特别地，以硫酸铜，乙二胺四乙酸和亚硫酸钠为主要成分的中性Cu-EDT。 浴是优选的。\n\n  【0048】当通过本发明的方法在环形池形磁体的表面上形成电镀膜时，可能存在在内表面上产生局部凸部的情况。 当用作由分散有第一金属的粉末的树脂制成的非导电涂层的主要成分的树脂的硬度低时，通常会出现这种现象。 用作导电涂层主要成分的树脂具有较高的硬度，特别是固化后的洛氏硬度为M 80或更高的树脂，例如酚醛树脂（Ml 10），环氧树脂（M80）， 期望使用丙烯酸树脂（M80），聚酯树脂（M80），聚酰亚胺树脂（Ml 28）等。 特别地，在这些树脂中，以聚酰亚胺树脂为代表的耐热热固性树脂，即所谓的超级工程塑料，即使在对磁体施加热量和负荷时也使树脂部分软化。 有效地，已经被树脂分散的第一金属的粉末获得了结合性能，结果，体积电阻率降低并且非导电膜的特性劣化。 更理想的是，其具有防止功能，同时具有对非导电膜赋予耐热性的功能。 当混合使用多种树脂时，优选组合使用各树脂，以使混合树脂自身的固化树脂具有M80以上。 例如，环氧树脂和聚酰亚胺树脂的混合树脂在固化时，其洛氏硬度为M80以上，相容性优异。 \n\n另外，如上所述，因为其具有优异的金属粉末分散性和优异的耐热性，所以是理想的混合树脂。 另外，添加到镀浴中以形成电镀膜的增白剂，例如，基于糖精的增白剂，例如芳族磺酰胺和芳族磺酰亚胺，以及2-丁炔-1，4-二醇等。 通过调节丁炔二醇类增亮剂的添加量，可以减轻层叠在非导电膜表面上的涂膜的应力，从而避免局部突起的发生。\n\n  【0049】此外，可以在如上所述形成的电镀膜上层压另一电镀膜等。 通过采用这种构造，可以增强/补充诸如耐腐蚀性和产品的机械强度之类的特性，并且可以增加其他功能。\n\n  【0050】在应用了本发明的稀土类永磁体中，池塘磁铁是磁性各向同性的池塘磁铁，只要其主要包含磁性粉末和树脂粘合剂即可。 也可能是磁性各向异性池塘磁铁。 此外，除了通过与树脂粘合剂粘合而形成的粘合剂之外，还可以使用通过与金属粘合剂或无机粘合剂粘合而形成的粘合剂。 此外，粘合剂可包含填料。\n\n  【0051】作为稀土类粘结磁体，已知各种组成和晶体结构，所有这些都是本发明的主题。\n\n  【0052】例如，如JP-A-9-152515中所述的各向异性R_F e 1 B系统磅磁体，如JP-A-8-203714中所述的软磁相（ 例如，具有a-Fe或Fe3B）和硬磁相（Nd2Fe14B）的Nd-Fe-B纳米复合磁体，过去已被广泛使用。 可以提及使用通过体淬火法制备的各向同性的Nd_Fe-B基磁体粉末（例如，商品名：MQP-B * MQI Co.，Ltd.）的粘结磁体。\n\n  【0053】另外，在日本特开平5-82041号公报中，（Fe i—XRX）x_yNy（0.07）  ≤x≤0、3、0.00 l≤y≤0.2。2）射频e-N系统磅磁铁。\n\n  【0054】另外，构成稀土类池塘磁铁的磁粉是熔融的稀土类永久磁铁合金。\n\n 然后，使用熔融粉碎法将制造后的粉末粉碎，将烧结磁铁制成后将其粉碎，直接还原扩散法通过Ca还原直接获得磁性粉，以及熔融喷射法 得到稀土永磁合金的带状箔，用淬火合金法对其进行粉碎和精制，将稀土永磁合金熔化，雾化并进行热处理，将原料雾化，将原料金属粉化 此后，可以通过诸如机械合金化方法的方法获得，其中通过机械合金化将粉末粉碎并进行热处理。\n\n  【0055】另外，构成R-Fe-N系磅磁铁的磁粉是将稀土类永磁体合金粉末化并在氮气或氨气中氮化而成的细粉状的气体。 也可以通过氮化法等方法获得。\n\n  本发明的效果根据构成稀土类永磁体的磁粉的组成，晶体结构，各向异性的有无等而不同。 因此，不管稀土类永磁体是池塘磁体还是烧结磁体，都可以获得预期的效果，但是该效果对于粘结磁体特别有用。\n\n  【0057】此外，当本发明应用于通过使用诸如厌氧性粘合剂的粘合剂将多个稀土类永磁体层叠而成的层叠磁体时，还包括磁体之间的粘合剂厚度部分。 可以在层叠磁体的整个表面上形成电镀膜。 因此，可以防止引起粘合力下降的物质（例如水）进入磁体和粘合剂之间的粘合界面，从而可以获得防止粘合力下降的效果。\n\n  【0058】此外，环状稀土类磅磁铁通过将其结合到用于安装在汽车等中的液体燃料（汽油，轻油，液体石油气等）的液体泵的电动机中来使用。 使用的环境可以在液体燃料的存在下，但是在形成由树脂制成的，其中第一金属的粉末分散在表面上的非导电膜之后，将非导电膜形成磁体放置在第一金属上。 通过浸入含有贵金属第二离子的溶液中，在非导电膜的表面上形成具有第二金属的镀膜，并且在具有置换金属膜的表面上形成具有第三金属的电镀膜。 这样，可以赋予环状稀土类粘结磁铁优异的耐液体燃料的耐久性。 在这种情况下，合适的第三种金属包括镍和锡，它们对液体燃料具有很高的耐腐蚀性。\n\n 例\n\n  【0059】将通过以下实验更详细地描述本发明，但是本发明不限于以下描述。\n\n  【0060】实验A（在环形稀土池磁体的表面上形成电镀膜）\n\n  【0061】将环氧树脂涂覆到通过淬火合金法制成的平均长轴为150 m的合金粉末上，其组成为Nd：12 at％，F e：77 at％，B：6 at％，Co：5 at％。 通过添加2wt％并捏合，在686 NZmm2的压力下压缩成型，然后在150°C的温度下固化1小时，制备出外径为3 OmmX，内径为28mmX，长度为4mm的环形磅磁体。 以下，使用磁体试验片进行以下实验。\n\n  【0062】示例1：\n\n  【0063】作为非导电性锌粉分散树脂的Eporoval（商品名，由Rhobar Co.制造：主要是平均粒径为4zm的氧化锌粉和固化后的洛氏硬度为M 80的环氧树脂） 用Epolo-Ibaru专用稀释剂（Rhobar的商品名）（重量比Eporoval：稀释剂= 1：0.5）稀释非导电锌粉并均匀搅拌。 制备分散树脂溶液。 将得到的溶液放入枪口径为1.5mm的气柱中。 使用层压装置以0.2MPa的喷涂压力喷涂磁体测试件的整个表面并喷涂后，在室温（20°C）下干燥60分钟并在200°C下干燥。 在C中烘烤30分钟后，非导电涂层（体积电阻率3Χ105Ω·cm：JIS：  —根据H0505）在磁体测试件的表面上形成。 在具有分散有锌粉的树脂制的非导电性涂层的磁铁试验片上，进行了在35℃下喷雾5重量％的盐溶液的盐雾试验。 没有观察到变化的磁体测试件（n = 50）。\n\n  【0064】将具有分散有25片锌粉的树脂制成的具有非导电涂层的磁体测试件与容量为2.8 L的直径为4 mm的氧化铝介质以及2.0 mm的氧化铝介质一起放入桶形罐中。 将其以6 OH z的频率进行桶式抛光30分钟。 超声波水清洗带有非导电涂层的磁铁试件，然后将其进行滚桶抛光3分钟。\n\n 之后，其包含240gZL的五水合硫酸镍，45g的五水合氯化镍和35gZL的硼酸，并且用碳酸镍将pH调节至4.2。 将磁体测试片浸入浴中，并且在不施加电压的情况下在非导电膜的表面上形成替代Ni镀膜30分钟。 此时，从加热浴中取出25个磁体试验片中的5个，检查形成的置换Ni镀膜的厚度。平均值为1m（荧光X射线）。 通过观察）。\n\n  【0065】然后通过施加电压以1.5 AZdm2的电流密度对剩余的20个磁体测试片进行90分钟的电镍电镀，并涂覆替代的镍镀膜。 在表面上形成电镍镀膜。\n\n  【0066】将如上所述获得的在最外表面具有电Ni镀膜的磁体试验片用超声波水洗涤3分钟，然后在10O下干燥60分钟。\n\n  【0067】用放大镜（X4）目视检查20个磁体测试件的最外表面上的电镍镀膜，未发现有带有针孔，突起或异物粘附的缺陷产品。 所有均为均质膜，被评价为良品。 由于在非导电膜的表面上形成的Ni镀膜的总厚度的平均值（n = 5）为25（通过荧光X射线观察），因此，电Ni镀膜的平均膜厚度为 发现值（n = 5）为24 ^ m。\n\n  【0068】在温度为6 Ot：x和相对湿度为90％的条件下，在最外表面具有电镍镀膜的15个磁体测试件上进行了500小时的耐腐蚀性测试。 结果，在任何磁体测试片中均未发现外观异常，例如膜膨胀或局部突起。\n\n  【0069】比较例1：\n\n  【0070】重量百分比为75％的锌粉，平均粒径为4 m，二甲苯百分比为22％，Epomic（三井化学的产品名称：1装环氧树脂，固化时洛氏硬度为M80）3％重量 混合并均匀搅拌以制备导电锌粉分散的树脂溶液。 使用喷枪直径为1.5 mm的空气喷涂装置，在0.2 MPa的喷涂压力下将所得溶液喷涂到磁体样品的整个表面上，并在室温下喷涂（20 在60°C干燥60分钟并在200°C烘烤30分钟后，膜厚为15 / m\n\n 在磁体测试件的表面上形成导电涂层（表面观察）（体积电阻率5×10-χΩ·cm：根据J I S-H0 505）。 通过在35℃下喷雾5重量％的盐水溶液，进行由分散有锌粉的树脂制的导电性涂层的磁铁喷雾试验，在500小时后进行盐雾试验。 有两个磁体标本（n = 50）。\n\n  【0071】示例2： \n\n【0072】使用与实施例1相同的非导电性锌粉分散树脂溶液，并且遵循与实施例1相同的步骤。 获得具有膜的磁体测试件。 将具有非导电涂层的机筒抛光磁体测试片用超声波水洗涤3分钟后，将该磁体测试片浸入与实施例1相同的浴中。 与实施例1不同，实施例2从开始浸入120分钟起以1.5AZdm2的电流密度进行镍电镀，并且在最外表面进行镍电镀。 形成膜。\n\n  【0073】将如上所述获得的在最外表面具有电Ni镀膜的磁体试验片用超声波水洗涤3分钟，然后在100℃下干燥60分钟。\n\n  【0074】用放大镜（X4）目视检查20个磁体测试件的最外表面上的电Ni镀膜，未发现有带有针孔，突起或异物附着的缺陷产品。 所有均为均质膜，被评价为良品。 在非导电膜的表面上形成的Ni镀膜的总厚度的平均值（n ＝ 5）为25m（通过荧光X射线观察）。 在实施例2中，不能测量在非导电膜的表面上形成的替代Ni镀膜的厚度，但是在最外表面上形成如上所述的高质量的Ni Ni镀膜的事实是这样的。 推测这是由于以下事实：在表面上形成了替代Ni镀膜，并且赋予了整个表面导电性。\n\n  【0075】在最外表面具有电镍镀膜的15个磁体试验片上进行了耐腐蚀性试验，将其在60°C的高温高湿和90％相对湿度的条件下放置500小时。 结果，在任何磁体测试片中都没有发现外观异常，例如涂层溶胀或局部突起。\n\n  【0076】比较例2：\n\n  【0077】第10号Eshathat EMC（Ohashi\n\n Gaku Kogyo的商品名：镍粉平均粒径为5 m，主要由丙烯酸树脂组成，硬化后的洛氏硬度为M 80。 用（大桥桥化学工业株式会社的商品名）（重量比Ereshut：稀释剂= 1：0.5）稀释后，通过均匀搅拌来制备导电性镍粉分散树脂溶液。 使用喷枪直径为1.5mm的喷雾器，在0.2MPa的喷雾压力的条件下，将得到的溶液喷雾到磁体试验片的整个表面上，进行喷雾涂布后，保持在室温（20℃）。 干燥60分钟并在200℃下烘烤30分钟后，形成导电涂层（体积电阻率为2X10-  1）Q * cm：根据JIS-H0505）在磁体测试件的表面上形成。\n\n  【0078】通过与实施例1相同的步骤，获得具有由树脂制成的导电涂层的磁体试验片，其中分散有桶抛光的镍粉，并且获得了涂覆有桶的导电涂层。 用超声波对磁体试验片进行3分钟的超声波清洗后，将磁体试验片浸入与实施例1相同的浴中，从开始浸入开始施加1.5AZ dm2的电流密度。 在上述条件下，进行镍电镀120分钟以在最外表面上形成镍电镀膜。\n\n  【0079】将如上所述获得的在最表面具有电Ni镀膜的磁体试验片用水超声清洗3分钟，然后在100℃下干燥60分钟。\n\n  【0080】用放大镜（X 4）对20个磁体试验片的最外表面上的电镍镀膜进行了目视检查，并且确认没有针孔，突起或异物附着在任何膜上。 观察到其中之一并且镀层的不均匀性很大，并且全部被评价为次品。 形成在导电膜表面上的Ni镀膜的总厚度的平均值（n ＝ 5）为25m（通过荧光X射线观察）。 上述结果表明，在比较例2中，由于在电Ni镀膜下未形成替代Ni镀膜，因此提供了足以形成良好的电Ni镀膜的导电性。 据推测，这是由于未能这样做。\n\n  【0081】在最外表面具有电镍镀膜的15个磁体试验片上进行了耐腐蚀性试验，将其在60℃的高温和高温以及90％的相对湿度的条件下放置500小时。 然而，发现任何磁体测试件都具有膨胀或局部突出。\n\n 零件等异常外观。\n\n  【0082】示例3：\n\n  【0083】Ereshat No.10 EMC（导电性镍粉分散树脂）（平均粒径为5的镍粉和固化时洛氏硬度为M80的丙烯酸树脂） 它与503号Suncoat（长岛特殊涂料有限公司的商品名：主要由固化时洛氏硬度为M 80的环氧树脂组成）一起使用。 用5600号稀释（大桥化学工业有限公司的商品名）（按重量比Ereshat：Suncoat：稀释剂= 1：0.2：0.5）混合树脂本身的洛氏硬度为M80  ），然后添加0.5重量％的Disparlon＃2150（Ku本化成株式会社的商品名：阴离子分散介质），并且将混合物均匀地搅拌以制备非导电性的Nigel粉末分散树脂溶液。 使用喷枪直径为1.5mm的空气喷雾器，在0.2MPa的喷雾压力的条件下，将获得的溶液喷雾到磁体试验片的整个表面上。  ）60分钟，并在200℃下烘烤30分钟，以获得具有15μm的膜厚度（根据横截面观察）的具有55重量％的镍粉分散体的非导电涂层（体积电阻率4 XI）。  04Ω·cm：根据JI S-H05.05）在磁体测试件的表面上形成。\n\n  【0084】通过与实施例1相同的步骤，获得了具有由树脂制成的非导电涂层的磁体试验片，其中分散有桶抛光的镍粉。 用保护层超声冲洗磁体测试件3分钟后，硫酸铜5水合物25 gZL，乙二胺四乙酸二钠55 gZL，酒石酸钠二水合物28.2 g / L， 将磁体试验片浸入含有71 g / L硫酸钠，25.2 g ZL亚硫酸钠的Cu镀浴中，并在40的液体温度下用氢氧化钠将pH调节至6.8，并施加电压30分钟。 不涂布而在非导电膜的表面上形成取代Cu镀膜。 此时，从Cu镀浴中取出25个磁体试验片中的5个，检查形成的置换Cu镀膜的膜厚，其平均值为2（荧光）。  X射线观察）。\n\n  【0085】然后通过施加电压以替换Cu镀膜，以1.5 AZ dm2的电流密度在Cu上电镀剩余的20个磁体测试件90分钟。\n\n 在表面上形成电镀铜膜。\n\n  【0086】将如上所述获得的在最表面具有Cu镀膜的磁体试验片用超声波水洗涤3分钟，然后在100℃下干燥60分钟。\n\n  【0087】用放大镜（X4）检查了20个磁体试验片的电镀Cu膜的最表面，未发现附着有针孔，突起或异物的不良品。 被评估为具有均匀涂层的无缺陷产品。 由于在非导电膜的表面上形成的Cu镀膜的总厚度（n ＝ 5）的平均值为24 / m（根据X射线荧光观察），因此，电Cu镀膜的平均厚度为2μm。 值（n == 5）为22 m。\n\n  【0088】在最外表面具有电镀铜膜的15个磁体样品上进行了耐腐蚀性测试，将其在90％和90％相对湿度的高温高湿条件下放置500小时。 结果，所有磁体测试片均略微变色为褐色，但未发现热点，涂层溶胀或局部凸出。\n\n  【0089】示例4：\n\n  【0090】以与实施例1相同的方式进行了滚筒抛光的具有非导电涂层的磁体试验片，进行超声波清洗3分钟，然后添加五水合硫酸镍133gZL，硫酸。 浸入213 gZL的钠，13 g / L的氯化铵，18 gZL的硼酸，然后将磁体测试件浸入低镍高硫酸盐浴中，该溶液的液体温度为50，用氢氧化钠调节至pH 5.8。 在不施加电压30分钟的情况下（通过荧光X射线观察）在非导电膜的表面上形成厚度为1m的替代Ni镀膜。 之后，施加电压以在1.5 AZ dm2的电流密度的条件下进行90分钟的电Ni电镀处理，以在替代Ni镀膜的表面上形成膜厚为24的电Ni镀膜。  （通过荧光X射线观察）。\n\n  【0091】将如上所述获得的在最外表面具有电Ni镀膜的磁体试验片用超声波水洗涤3分钟，然后在100℃下干燥60分钟。 用放大镜（X4）对磁体试验片的外表面进行目视检查时，未发现针孔，突起或异物附着等异常。 此外，在最外表面具有电镍镀膜的磁体试验片在温度为60℃，相对湿度为90％的高温高湿条件下进行了500小时的耐腐蚀性试验，\n\n 没有发现外观异常，例如涂层溶胀和局部凸起。 此外，通过使其在最外表面上具有电Ni镀膜的磁体测试片在120个热板上静置3分钟来进行热冲击测试。 由于对镀膜的粘附性差，未发现异常外观。 范例5： \n\n【0092】作为非导电性锌粉分散树脂的Eporoval（Roval Co.的商品名：主要是平均粒径为4 zm的氧化锌粉，固化后的洛氏硬度为M 80的环氧树脂） 用BAN I（丸善石油化学株式会社的商品名：固化时洛氏硬度为Ml 28的聚酰亚胺树脂）和Eporoval专用稀释剂（Rover Co.的商品名）稀释 比例的EPOROVAL：BAN I：稀释剂＝ 1：0.2：0.5 Z固化后的混合树脂本身的洛氏硬度为M90），通过均匀搅拌来制备非导电性锌粉分散树脂溶液。 做到了。 使用喷枪直径为1.5 mm的空气喷涂设备，在0.2 MPa的喷涂压力，喷涂漆，然后在室温下的条件下，将所得溶液喷涂到磁体测试件的整个表面上。 干燥（20℃）60分钟，再于200℃烘烤30分钟，膜厚为10μm的非导电涂层（根据横截面观察），锌粉分散体为77％（重量）。 在磁体测试片的表面上形成2×106Q * cm的体积电阻率：根据JIS-H0505）。\n\n  【0093】具有与实施例1相同的方式，对具有由分散有锌粉的架子形成的非导电性涂层的磁体试验片进行了抛光。 将已经进行了滚筒抛光的具有非导电涂层的磁体测试件用水超声清洗3分钟，然后执行与示例1相同的步骤，并对非导电涂层表面进行厚度为1μm的置换Ni镀层。 形成膜，并且在替换的Ni镀膜的表面上进一步形成膜厚为24 / m的电Ni镀膜（通过荧光X射线观察）。\n\n  【0094】将如上所述获得的在最外表面具有电Ni镀膜的磁体试验片用水超声清洗3分钟，然后在100℃下干燥60分钟。 用放大镜（X4）对磁体试验片的外表面进行目视检查时，未发现针孔，突起或异物附着等异常。 另外，在该最外表面具有电Ni镀膜的磁体试验片上，施加60℃×相对湿度的温度。\n\n 在90％的高温高湿条件下进行500小时的耐腐蚀性试验时，未发现涂层溶胀，局部凸部等异常外观。 此外，当在其最外表面具有电Ni镀膜的磁体测试片上进行热冲击测试时，使该测试片在12 Ot的热板上静置3分钟。 由于与镍镀膜的粘附性差，未发现异常外观。 此外，在最外表面具有电Ni镀膜的磁体试验片（以下称为样品）上进行以下试验，作为汽油耐久性试验。 将三个样品放在内部容积为5 OmL的耐压气密容器中，并与12 mL市售的常规汽油一起，盖紧盖子。 之后，将该耐压气密容器放入温水浴（恒温水槽）中，在80℃下保持2小时（由于汽油的蒸气压，容器的内部压力为约300kPa）。 从水浴中取出密闭容器并在大气中保持12小时的操作被定义为1个循环，并且在进行5个循环，15个循环，30个循环和50个循环的该操作之后，执行样品的尺寸改变。  （外径，内径和高度），重量变化和径向抗压强度（当通过从垂直于环中心线的方向施加载荷而使环断裂时的重量）被检查。 结果，即使在上述操作的50个循环之后，样品也没有在任何评价项目中显示出任何特别的变化，并且显示出优异的耐汽油耐久性。 尽管磁性能稍有下降，但是对于实际使用来说并不是问题。 当对磁体试验片本身进行上述汽油耐久性试验时，由于汽油引起的树脂粘合剂的溶胀，磁体试验片的尺寸显着增加。\n\n  【0095】示例6：\n\n  【0096】以与实施例5相同的方式进行了滚筒抛光的具有非导电涂层的磁体试验片，用水超声清洗3分钟，然后进行与实施例4相同的步骤，以获得非导电材料。 在导电涂膜的表面上形成厚度为1m的替代Ni镀膜，并且在替代Ni镀膜的表面上进一步形成厚度为24m的电Ni镀膜（通过荧光X射线观察）。 将如上所述获得的在最外表面具有电Ni镀膜的磁体试验片用水超声清洗3分钟，然后在100℃下干燥60分钟。 用放大镜（X 4）检查磁体试验片最外表面上的电镍镀膜的外观\n\n 未发现异常现象，例如孔，突起或异物。 另外，当对在最外表面具有电镍镀膜的磁体试验片进行耐腐蚀性试验时，将其在温度为60℃，相对湿度为90％的高温高湿条件下放置500小时， 没有发现外观异常，如薄膜膨胀和局部凸出。 此外，当在其最外表面上具有电Ni镀膜的磁体测试片上进行热冲击测试时，使该测试片在120英寸的热板上静置3分钟。 由于与镀膜的粘合性差，未发现异常外观实验B（在透明丙烯酸板表面上形成镀膜）\n\n  【0097】一个小型振动桶（Chipton\'s VM-10），带有5个60 mm x 20 m mx x 2 mm厚度的透明丙烯酸板和2 L氧化铝介质。\n\n  装入【0098】（Chipton制造：PSc /）4），将透明丙烯酸板的表面研磨30分钟。 接着，将表面抛光的透明丙烯酸板浸入丙酮中1分钟以使表面脱脂，然后自然干燥。\n\n  【0099】将Eporobal（商品名：Rhobaru Co.，Ltd。制造：铅粉的平均粒径为4 / m）用作非导电性锌粉分散树脂。 用（公司的商品名）（重量比：Ephalo：稀释剂= 1：0.7）稀释后，通过均匀搅拌来制备非导电性锌粉分散树脂溶液。 使用喷枪口径为1.2 mm的空气喷涂装置，在0.2 MPa的喷涂压力条件下，将所得溶液喷涂在透明丙烯酸板的整个表面上，并在室温（20°C）下喷涂。  C）60分钟，然后在200°C下烘烤30分钟，然后制成非导电涂层（体积电阻率为2X 10  5Q·cm：根据JIS-H0505，在透明丙烯酸板的表面上形成。\n\n  【0100】小振动筒（Tipton Co.，Ltd。制造的VM-10）与5块透明丙烯酸板一起使用，在步骤1所得的表面上形成了非导电涂层，氧化铝介质2 L 加载Chipton Corp.：PS＜i)4），并且将非导电涂层的表面抛光30分钟。\n\n  【0101】具有非导电涂层的已被表面抛光的透明丙烯酸板是五水合硫酸镍五水合物240 gZL，五水合氯化镍五水合物45 gZL，硼酸35 gZL。\n\n 通过将其浸没在55℃的液体温度的瓦特浴中，在其中不施加电压30分钟的情况下，在非导电膜的表面上形成替代的Ni镀膜，其中用碱性碳酸镍将pH调节至4.2。 此时，从瓦特浴中取出5块透明丙烯酸板中的2块，检查形成的置换Ni镀膜的厚度，平均值为1（通过横截面观察）。  .. 如此形成的替代Ni镀膜表现出作为金属Ni的表面纹理并且具有5×10-6Ω·cm的体积电阻率。 因此，发现即使在该阶段，出于赋予抗静电目的而赋予装饰性和表面导电性的目的，也实际上是令人满意的。\n\n  【0102】然后，通过施加电压，以1.5 AZdm2的电流密度对剩余的三块透明丙烯酸板进行90分钟的电镍电镀。 在其上形成电镍镀膜。\n\n  【0103】将如上所述获得的在最外表面具有电镍镀膜的透明丙烯酸板用水超声清洗3分钟，然后在100℃下干燥60分钟。\n\n  【0104】用放大镜（X4）目视检查了三个透明丙烯酸板的最外层镍电镀膜，未发现有针孔，突起或异物粘附的缺陷产品。 被评估为具有均匀涂层的无缺陷产品。 在非导电膜的表面上形成的Ni镀膜的总厚度（n ＝ 3）的平均值为25m（根据截面观察）。 发现（n ＝ 3）为24m。\n\n  【0105】实验C（在木制吉祥物蝙蝠的表面上形成电镀膜）\n\n  【0106】以与实验B中相同的方式，在其表面上形成具有长度为24 Omm x直径为约1 Omm的木质吉祥物袋，其具有均匀且致密的电Ni镀膜，具有优异的粘附性。\n\n  【0107】实验D（Danpole纸表面上的电镀膜的形成）\n\n  【0108】对于6 Omm x 20 mm x 2 mm厚的阻尼孔纸，与实验B相同（但是，省略了使用小振动筒的两个表面抛光步骤）。 形成致密的电镍镀膜。\n\n  【0109】实验E（在透明玻璃板表面上形成电镀膜）\n\n  【0110】6毫米x 20毫米x 2毫米透明玻璃板与实验B相同\n\n 然后，在表面上形成具有均匀附着力的均匀且致密的电Ni镀膜。\n\n  【0111】实验F（在铝板表面上形成电镀膜）\n\n  【0112】与实验B同样，在长60mm×宽20mm×厚2mm的铝板上，以均匀且致密的电Ni镀膜被覆，且密合性优异。 形成。\n\n  【0113】实验G（镁合金板表面上的电镀膜的形成）\n\n  【0114】具有6Omm×20mm的宽度和2mm的厚度的镁合金板，以与实验B相同的方式在其表面上具有均匀且致密的电Ni镀膜，并且具有优异的粘附性。 形成。 工业可用性\n\n  【0115】根据本发明，提供了一种在不依赖于制品的表面材料或表面性质的情况下，在制品的表面上形成具有优异粘附性的均匀且致密的电镀膜的方法。');
INSERT INTO `os_patent_instruction_text` VALUES (12965, 22794, '기 술 분 야\n\n본 발명은, 뛰어난 내열성과 접착성을 겸비한 염가인 내식성(耐食性) 피막을 표면에 갖는 희토류계 영구자석,그 제조방법 및 내식성 피막형성용 처리액에 관한 것이다.\n\n배 경 기 술\n\nNd-Fe-B계 영구자석으로 대표되는 R-Fe-B계 영구자석이나 Sm-Fe-N계 영구자석으로 대표되는 R-Fe-N계 영구자석등의 희토류계 영구자석은, 자원적으로 풍부하고 염가인 재료가 사용되고, 또한, 높은 자기특성을 갖고 있기 때문에, 특히 R-Fe-B계 영구자석은 요즘 여러 분야에서 사용되고 있다.\n\n그러나, 희토류계 영구자석은 반응성이 높은 희토류금속: R을 포함하기 때문에, 대기중에서 산화부식되기 쉽고,아무런 표면처리도 하지 않고 사용한 경우에는, 조금의 산이나 알칼리나 수분 등의 존재에 의해서 표면에서 부식이 진행하여 녹이 발생하고, 그에 따라서, 자석특성의 열화나 불균형을 초래한다.\n\n또한, 녹이 발생한 자석을\n\n자기회로 등의 장치에 집어넣는 경우, 녹이 비산(飛散)하여 주변부품을 오염할 우려가 있다.\n\n따라서, 희토류계 영구자석 표면에 각종의 내식성 피막을 형성하는 것이 오래전부터 행하여지고 있다.\n\n그런데, 오늘에서의 희토류계 영구자석의 적용범위의 확대에 따라서, 그 표면에 형성되는 내식성 피막에 대해서는 높은 내식성은 물론, 온도변화가 심한 사용환경하에서의 내열성, 부품을 집어넣을 때에 사용되는 접착제를비롯하여 유기수지와의 접착성 등에 대해서도 뛰어난 성능이 요구되고 있다.\n\n더구나 형성되는 내식성 피막은\n\n염가인 것이 바람직하다.\n\n그래서 본 발명은, 뛰어난 내열성과 접착성을 겸비한 염가인 내식성 피막을 표면에 갖는 희토류계 영구자석, 그제조방법 및 내식성 피막형성 처리액을 제공하는 것을 목적으로 한다.\n\n발명의 상세한 설명\n\n본 발명자들은 상기의 점을 감안하여, 여러가지의 검토를 하는 과정에서, 희토류계 영구자석 표면에 내식성 피막으로서 알칼리규산염을 구성성분으로 하는 유리형상 보호피막을 형성하는 방법에 착안하였다.\n\n알칼리규산염\n\n을 구성성분으로 하는 피막은 예로부터 알려져 있는 내식성 피막의 하나로서, 염가로 형성할 수가 있다고 하는점에서 상기의 요구를 충족시킬 수 있는 피막이 될 수 있지만, 본 발명자들의 검토에 의해, 이 피막은 내식성을비롯하여 각종 성능의 점에서 만족할 만한 것이 아니라, 더 나은 성능향상이 필요한 것을 알 수 있었다.\n\n또한,\n\n최근, 유리형상 보호피막의 성능향상을 목적으로 하여 여러가지의 개량이 검토되고 있고, 예를 들면, 미국특허제6174609호에 있어서는 3중량%∼10중량%의 알칼리규산염과 90중량%∼97중량%의 열경화성수지를 구성성분으로하는 내식성 피막이 제안되어, 이러한 구성으로 함으로써, 보다 높은 내식성을 발휘시키는 것으로 성공하고 있지만, 이 피막에 있어서도, 내열성과 접착성의 점에서 반드시 만족할 만한 성능을 갖고 있지 않은 것을 알 수있었다.\n\n그래서 더욱 검토를 행한 결과, 규산리튬을 구성성분으로 하는 피막중에 소정량의 열가소성수지를 균일분산시킴으로써, 규산리튬과 열가소성수지가 어울려서 균질한 삼차원적 네트워크구조를 형성하여, 온도변화가 심한 사용환경하에 있더라도 피막의 열수축에 의한 피막자체의 갈라짐의 발생이나 피막과 소재자석과의 열팽창율의 차이에 의한 갈라짐의 발생이 효과적으로 방지되는 내열성이 뛰어난 내식성 피막을 얻을 수 있는 것, 또한, 각종 접착제와의 접착성이 뛰어난 동시에, 접착성의 열화가 일어나기 어려운 내식성 피막을 얻을 수 있는 것을 발견하였다.\n\n본 발명은 이상과 같은 연구과정을 거쳐 완성된 것으로, 본 발명의 희토류계 영구자석은, 청구의 범위 제 1 항에 기재된 바와 같이, 규산리튬과 열가소성수지를 구성성분으로 하는 내식성 피막으로서, 상기 열가소성수지가소프프리(Soap-free) 수용성 에멀전수지를 이용하여 형성되어 있으며, 해당 피막중에 열가소성수지가 0.1중량%∼ 50중량%의 함량으로 균일분산한 피막을 표면에 갖는 것을 특징으로 한다.\n\n또한, 청구의 범위 제 2 항에 기재된 희토류계 영구자석은, 청구의 범위 제 1 항에 기재된 희토류계 영구자석에있어서, 규산나트륨을 피막의 구성성분으로 더 포함하며, 그 피막중에 있어서의 나트륨함량이 10중량% 이하인것을 특징으로 한다.\n\n삭제\n\n삭제\n\n또한, 청구의 범위 제 5 항에 기재된 희토류계 영구자석은, 청구의 범위 제 1 항에 기재된 희토류계 영구자석에있어서, 열가소성수지가 아크릴스티렌수지인 것을 특징으로 한다.\n\n또한, 청구의 범위 제 6 항에 기재된 희토류계 영구자석은, 청구의 범위 제 1 항에 기재된 희토류 영구자석에있어서, 자석 단위표면적당 피막부착량이 0.01g/㎡∼5.0g/㎡인 것을 특징으로 한다.\n\n또한, 본 발명의 규산리튬과 열가소성수지를 구성성분으로 하는 내식성 피막을 표면에 가지는 희토류계 영구자석의 제조방법은, 청구의 범위 제 7 항에 기재된 바와 같이, 열가소성수지의 소프프리 수용성 에멀전수지를 규산리튬 수용액에 분산시키고, 열가소성수지를 0.1중량%∼5중량%, 규산리튬을 2중량%∼30중량% 포함하는 처리액을 조제하고, 이 처리액을 자석표면에 도장한 후, 가열건조함에 의해 내식성 피막으로 하는 것을 특징으로한다.\n\n또한, 청구의 범위 제 8 항에 기재된 제조방법은, 청구의 범위 제 7 항에 기재된 제조방법에 있어서, 처리액중에 규산나트륨을 더 포함하며, 상기 처리액중에 있어서의 나트륨함량이 1중량% 이하인 것을 특징으로 한다.\n\n삭제\n\n또한, 청구의 범위 제 10 항에 기재된 제조방법은, 청구의 범위 제 7 항에 기재된 제조방법에 있어서, 열가소성수지가 아크릴스티렌수지인 것을 특징으로 한다.\n\n또한, 본 발명의 희토류계 영구자석 표면에의 규산 리튬과 열가소성수지를 구성성분으로 하는 내식성 피막형성용 처리액은, 청구의 범위 제 11 항에 기재된 바와 같이, 열가소성수지를 소프프리 수용성 에멀전수지로서 0.1중량%∼5중량%, 규산리튬을 2중량%∼30중량% 포함하는 것을 특징으로 한다.\n\n또한, 청구의 범위 제 12 항에 기재된 처리액은, 청구의 범위 제 11 항에 기재된 처리액에 있어서, 처리액중에규산나트륨을 더 포함하며, 그 처리액중에 있어서의 나트륨함량이 1중량% 이하인 것을 특징으로 한다.\n\n삭제\n\n또한, 청구의 범위 제 14 항에 기재된 처리액은, 청구의 범위 제 11 항에 기재된 처리액에 있어서, 열가소성수지가 아크릴스티렌수지인 것을 특징으로 한다.\n\n[발명을 실시하기 위한 최선의 형태]본 발명의 희토류계 영구자석은, 규산리튬과 열가소성수지를 구성성분으로 하는 내식성 피막으로서, 상기 열가소성수지가 소프프리(Soap-free) 수용성 에멀전수지를 이용하여 형성되어 있으며, 해당 피막내에 열가소성수지가 0.1중량%∼50중량%의 함량으로 균일분산한 피막을 표면에 갖는 것을 특징으로 하는 것이다.\n\n본 발명에 있어서의 내식성 피막은, 구성성분의 하나로서 규산리튬을 포함한다.\n\n규산리튬을 구성성분으로 하는\n\n피막은, 일반식: Li2O·nSiO2로 나타내는 규산리튬의 수용액으로부터 형성되는 것으로, 내식성이 뛰어나다고 하는 특성을 본질적으로 갖는다.\n\n상기 일반식중에 있어서 n은 몰비(SiO2/Li2O)를 의미하고, 본 발명에 있어서는,통상, n이 1.5∼10의 범위에 있는 것이 사용된다.\n\n본 발명에 있어서의 내식성 피막은, 알칼리규산염으로서 규산리튬만을 구성성분으로 하는 것이더라도 좋지만,규산리튬에 가하여 규산나트륨(물유리)이나 규산칼륨이나 규산암모늄 등을 구성성분으로 더 포함하는 것이더라도 좋다.\n\n그 중에서도 규산나트륨을 피막의 구성성분으로 함으로써, 피막형성시의 양호한 막제조성 및 자석과의 강고한 밀착성을 확보하는 것이 가능하게 된다.\n\n또한, 규산나트륨을 피막의 구성성분으로 하면, 피막에 외상이나 크랙 등이 존재하고 있더라도, 규산나트륨이 물에 조금 용해하여 해당 부분에 침투 고화(固化)하여, 자기수복적(自己修復的) 내식작용을 발휘한다.\n\n규산나트륨을 피막의 구성성분으로 하는 경우, 피막중의 그 함량은 나트륨함량으로서 10중량% 이하로 하는 것이 바람직하고, 5중량% 이하로 하는 것이 보다 바람직하다.\n\n10중\n\n량%를 넘으면 형성되는 피막의 내수성에 악영향을 미치는 경우가 있고, 이것에 기인하여 내열성과 접착성의 열화를 초래할 우려가 있기 때문이다.\n\n본 발명에 있어서 내식성 피막의 구성성분인 열가소성수지로서는, 예를 들면, 아크릴수지, 아크릴스티렌수지,폴리에스테르수지, 폴리아미드수지, 폴리카보네이트수지 등을 들 수 있다.\n\n∼50중량%의 함량으로 균일분산된다.\n\n휘되지 않기 때문이다.\n\n열가소성수지는 피막내에 0.1중량%\n\n0.1중량% 미만으로 형성된 피막에 있어서 뛰어난 접착성이나 내열성이 발한편, 50중량%를 넘으면 고온시 수지가 표면응집을 일으켜 버려, 내열성의 열화를 초래하는 동시에, 접착제의 종류에 따라서는 접착성에도 영향을 미치는 경우가 있기 때문이다.\n\n피막내에 균일분산\n\n되는 열가소성수지의 함량은, 바람직하게는 1중량%∼30중량%이고, 보다 바람직하게는 5중량%∼ 20중량%이다.\n\n본 발명에 있어서의 내식성 피막은, 규산리튬 수용액에 열가소성수지를 분산시킨 처리액을 조제하여, 이 처리액을 자석표면에 스프레이 도장하거나, 처리액중에 자석을 침지하여 침지도장을 한 후, 예를 들면, 60℃∼300℃의온도조건하에서 1분간∼120분간 가열건조시킴으로써 형성한다.\n\n자석표면에 뛰어난 성능을 갖는 내식성 피막을형성하기 위해서는, 처리액중에 있어서 열가소성수지를 균일분산시키는 것이 중요하다.\n\n또한, 대량생산을 염두\n\n에 둔 경우, 조제되는 처리액은 보존안정성이 뛰어나고, 액체수명(포트라이프)이 긴 것이 이상적이다.\n\n이상의\n\n점을 감안하여, 규산리튬 수용액에 분산시키는 열가소성수지는, 유화제(계면활성제)가 첨가되어 있지 않은 소프프리 수용성 에멀전수지를 이용한다.\n\n알칼리규산염 수용액은 알칼리성을 나타내기 때문에(pH10∼pH13 : 이러한pH는 자석부식의 문제를 발생시키지 않고 작업환경상의 면에서도 바람직하다), 열가소성수지를 유화제(특히 비이온계 계면활성제)가 첨가된 수용성 에멀전수지로서 분산시킨 경우, 액체내에서 에멀전파괴가 생겨 수지의 겔화가 일어나는 경우가 많으므로, 열가소성수지가 균일분산한 처리액을 조제하는 것이 곤란하게 되어, 그 결과,뛰어난 성능을 갖는 내식성 피막을 형성할 수 없게 될 우려가 있기 때문이다.\n\n또한, 이러한 처리액은 당연하지\n\n만 이상과 같은 현상에 기인하여 액체수명의 점에서도 뒤떨어지기 때문이다.\n\n본 발명자들의 검토에 의하면, 열가소성수지로서 아크릴스티렌수지를 소프프리 수용성 에멀전수지로서 규산리튬수용액에 분산시켜 조제한 처리액은, 처리액중에서의 아크릴스티렌수지의 균일분산성이 뛰어났다.\n\n따라서, 이\n\n처리액을 사용하여 형성된 내식성 피막은, 피막내에서 아크릴스티렌수지가 균일분산하여, 뛰어난 내열성이나 접착성을 발휘한다.\n\n또, 아크릴스티렌수지란, 스티렌 모노머와 아크릴산에스테르 모노머를 중합함에 의해 얻어지는 수지를 의미한다.\n\n스티렌 모노머로서는 스티렌이나 α-메틸스티렌 등이 사용될 수 있다.\n\n아크릴산에스테르\n\n모노머로서는, 아크릴산메틸, 아크릴산에틸, 아크릴산프로필, 아크릴산부틸, 아크릴산2-에틸헥실,메타크릴산\n\n메틸, 메타크릴산에틸, 메타크릴산프로필, 메타크릴산부틸, 메타크릴산2-에틸헥실 등이 사용될 수 있다.\n\n바람\n\n직한 아크릴스티렌수지로서는, 스티렌-메타크릴산메틸 공중합체, 스티렌-아크릴산부틸 공중합체, 스티렌-메타크릴산메틸-아크릴산부틸 공중합체, 스티렌-메타크릴산부틸 등이 있다.\n\n소프프리 수용성 에멀전타입의 아크릴스티렌수지로서는 예를 들면, 아사히 가세이 고교사제의 상품명: F-2000이 바람직하게 사용된다.\n\n뛰어난 성능을 갖는 내식성 피막을 형성하기 위한 바람직한 처리액으로서는, 열가소성수지를 소프프리 수용성에멀전수지로서 0.1중량%∼5중량%, 바람직하게는 0.5중량%∼3중량% 포함하고, 규산리튬을 2중량%∼30중량% 포함하는 처리액을 들 수 있고, 이 조성범위내에서 피막중에 균일분산시키는 열가소성수지가 소망함량이 되도록 적절하게 조정하는 것이 바람직하다.\n\n또, 알칼리규산염으로서 규산나트륨을 처리액중에 더 포함하게 하는경우는, 처리액중에서의 나트륨함량이 1중량% 이하가 되도록 하는 것이 바람직하다.\n\n본 발명에 있어서의 내식성 피막은 자석 단위표면적당의 피막부착량이 0.01g/㎡ 이상(막두께 15nm정도 이상)이되도록 형성하는 것이 바람직하다.\n\n우려가 있기 때문이다.\n\n0.01g/㎡보다도 적으면 내식성 피막으로서의 성능을 충분히 발휘할 수 없는또, 피막부착량의 상한은 특단 한정되는 것이 아니지만, 피막부착량이 지나치게 많으면자석표면 전체에 대한 균일부착성의 확보가 곤란하게 되어, 접착제를 비롯한 유기수지와의 접착성에 악영향을미칠 우려가 있다.\n\n따라서, 이상의 관점에서는 피막부착량의 상한은 5.0g/㎡로 하는 것이 바람직하다.\n\n본 발명에 적용되는 희토류계 영구자석으로서는, 예를 들면, R-Fe-B계 영구자석이나 R-Fe-N계 영구자석 등의 공지의 희토류계 영구자석을 들 수 있다.\n\n그 중에서도, R-Fe-B계 영구자석은, 상술한 바와 같이, 자기특성이 높고, 양산성이나 경제성이 우수한 데다가, 피막과의 뛰어난 밀착성을 갖는 점에서 바람직한 것이다.\n\n이들 희토\n\n류계 영구자석에 있어서의 희토류원소(R)는, Nd, Pr, Dy, Ho, Tb, Sm 중 적어도 1종, 혹은 La, Ce, Gd, Er,Eu, Tm, Yb, Lu, Y 중 적어도 1종을 더 포함하는 것이 바람직하다.\n\n또한, 통상은 R중 1종을 갖고 충분하지만, 실용상은 2종 이상의 혼합물(미시메탈이나 디딤 등)을 입수상의 편의등의 이유에 의해서 사용할 수 있다.\n\n또한, Al, Ti, V, Cr, Mn, Bi, Nb, Ta, Mo, W, Sb, Ge, Sn, Zr, Ni, Si, Zn, Hf, Ga 중 적어도 1종을 첨가함으로써, 보자력(保磁力)이나 감자곡선(減磁曲線)의 각형성(角型性)의 개선, 제조성의 개선, 저가격화를 꾀하는 것이 가능하게 된다.\n\n또한, Fe의 일부를 Co로 치환함으로써, 얻어지는 자석의 자기특성을 손상하는 일 없이 온도특성을 개선할 수가 있다.\n\n또, 본 발명에 적용되는 희토류계 영구자석은, 소결자석이더라도 본드자석이더라도 좋다.\n\n본 발명의 내식성 피막의 표면에, 별도의 피막을 더 적층형성하더라도 좋다.\n\n이러한 구성을 채용함으로써, 내\n\n식성 피막의 특성을 증강·보완하거나, 더 나은 기능성을 부여하거나 할 수가 있다.\n\n실 시 예\n\n본 발명을 이하의 실시예에 의해서 더욱 상세히 설명하지만, 본 발명은 이것에 한정되는 것이 아니다.\n\n실시예 A :\n\n예를 들면, 미국특허 4770723호 공보나 미국특허 4792368호 공보에 기재되어 있는 바와 같이 하여, 공지의 주조(鑄造)잉곳을 분쇄하고, 미분쇄(微粉碎) 후에 성형, 소결, 열처리, 표면가공을 하는 것에 의해 얻어진 14Nd79Fe-6B-1Co 조성(at%)의 세로 30mm ×가로 20mm ×높이 3mm 치수의 평판형상 소결자석(이하, 자석체 시험편이라 칭한다)의 표면에 내식성 피막을 아래와 같이 하여 형성하였다.\n\n1 : 처리액의 조제와 그 보존안정성각종의 알칼리규산염 수용액에 각종의 수지를 첨가하여, 교반기로 혼합교반함에 의해 표 1에 나타내는 15종류의처리액을 조제하였다.\n\n또, 표 1에 있어서 수지 a인 F-2000(상품명)은 소프프리 수용성 에멀전타입의 아크릴스티렌수지(아사히가세이고교사제의 열가소성수지)이고, 수지 b인M6520(상품명)은 유화제 첨가형의 수용성 에멀전타입의 아크릴스티렌수지(클라이언트폴리머사제의 열가소성수지)이고, 수지 c인 E1022(상품명)는 유화제 첨가형의 수용성 에멀전타입의 에폭시수지(요시무라유 가가쿠사제의 수지이고 동일 회사제의 경화제 H-35(상품명)와동시에 첨가하여 열경화성수지로 하는 것)이다.\n\n얻어진 처리액(그 pH는 어느 것이나 11∼12)을 40℃에서 2주간 보존하는 것에 의해, 그 보존안정성을 조사한 결과를 표 1에 더불어 나타낸다(표 1중,은 2주간 후에도 분산양호한 것을 의미하고,성분의 침강 고화(固化)가 생기는 것을 의미하고,는 조제후 4일 이내에\n\n는 조제후 1일 이내에 성분의 침강 고화가 생기는 것을 의미한다).\n\n*1)\n\nA : 규산리튬(n=4.5)/규산나트륨(n=3) = 4/1(중량비)B : 규산리튬(n=4.5)/규산나트륨(n=3) = 9/1(중량비)C : 규산리튬(n=4.5)\n\nD : 규산리튬(n=4.5)/규산나트륨(n=3) = 5/4(중량비)E : 규산나트륨(n=3)\n\n*2)\n\na : F2000\n\nb : M6520\n\nc : E1022\n\n표 1에서 명백하듯이, 소프프리 수용액 에멀전수지를 알칼리규산염 수용액에 분산시킨 처리액(No. 1∼9)은, 그중 어느 것이나 보존안정성이 뛰어나고, 처리액 조제로부터 2주간 보존 후에도 뛰어난 분산성을 나타내었다.\n\n한편, 유화제 첨가형의 수용성 에멀전수지를 알칼리규산염 수용액에 분산시킨 처리액(No. 10∼14)은, 그 중 어느 것이나 보존안정성이 뒤떨어지고 있었다.\n\n2 : 내식성 피막의 형성과 그 특성아세톤으로 초음파세정함에 의해 표면에 부착하고 있는 자석성분을 제거한 자석체 시험편을, 조제하고 나서 3시간 경과후의 각 처리액중에 침지하였다.\n\n그 후, 자석체 시험편을 처리액중에서 끌어올려 200℃에서 20분간 가열건조하여 자석체 시험편 표면에 내식성 피막을 형성하였다.\n\n또, 피막 부착량은 에어와이핑의 와이핑압을 조정함에 의해 조정하였다.\n\n이상의 방법으로 형성된 내식성 피막의 특성에 대해서 표 2에 나타낸다.\n\n또한, 표 2에 있어서, 내열내식성은,대기중에서 1시간마다 실온(25℃)분위기하와 170℃ 분위기하로 존치한다고 하는 가열냉각사이클을 120회 행한내식성 피막을 표면에 갖는 자석체 시험편에 대하여, 온도 80℃ ×상대습도 90%의 고온고습조건하로 존치한다고하는 습윤시험을 행하여, 빨간 녹이 슨 자석체 시험편 표면적에 있어서의 발생률이 1%가 되기까지의 시간으로나타내었다(n=5의 평균치).\n\n또한, 자속변화는 상기의 120회의 가열냉각사이클과 또한 그것에 계속되는 습윤시험을 하는 전후에서의 내식성 피막을 표면에 갖는 자석체 시험편의 자속의 변화율(자감률)로 나타내었다(n=5의평균치).\n\n또한, 접착성은 20mm ×20mm의 셀로테이프(니치반사제의 등록상표)를 30mm ×20mm 면의 내식성 피막에 첨부하여, 180도 수평방향으로 잡아당겼을 때의 강도에 대해서, \'피막형성 직후의 강도/피막형성으로부터 2주간 실내방치 후의 강도\'로 나타내었다(n=5의 평균치).\n\n표 2로부터 명백하듯이, 열가소성수지를 소프프리 수용성 에멀전수지로서 알칼리규산염 수용액에 분산시켜 조제된 처리액으로부터 형성되는 피막으로서, 해당 피막중의 열가소성수지가 50중량% 이하의 함량으로 균일분산한피막이면 뛰어난 내식성을 나타내는 것을 알 수 있었다.\n\n실시예 B :\n\n예를 들면, 미국특허 4770723호 공보나 미국특허 4792368호 공보에 기재되어 있는 바와 같이 하여, 공지의 주조잉곳을 분쇄하고, 미분쇄(微粉碎)후에 성형, 소결, 열처리, 표면가공을 하는 것에 따라 얻어진 14Nd-79Fe-6B1Co 조성(at%)의 지름 9mm ×높이 3mm 치수의 원주형상 소결자석(이하, 자석체 시험편이라 칭한다)의 표면에 실시예 A에서의 처리액 4를 사용하여, 실시예 A와 같이 하여 내식성 피막을 형성하였다.\n\n형성된 내식성 피막에 관해서, 피막형성 직후와 온도 80℃ ×상대습도 90%의 고온고습 조건하에 100시간 존치한다고 하는 습윤시험을 한 후의 각종 접착제와의 접착성을 아래와 같이 조사하였다.\n\n접착제 1 :\n\n접착면을 JIS R6001규정의 #100의 연마용 입자를 갖는 다이아몬드지석(砥石)을 사용하여 연마한 주철(S45C)제의40mm ×50mm ×60mm 치수의 치구에 샘플을 다음과 같이 하여 접착하였다.\n\n프라이머(프라이머 7649 : 헹켈재팬사제의 상품명)를도포하였다.\n\n즉, 샘플과 치구의 양쪽의 접착면에\n\n프라이머중의 용매를 건조제거한 후, 접착면에 염기성 자외선 경화형 접착제(록타이트 366 : 헹켈재팬사제의 상품명)를 도포한 샘플을 치구의 접착면의위에 얹어 놓고, 샘플의 위에서 4kgf(39.2N)의 가중을 10초간 걸어서 양자를 눌러 붙였다.\n\n또, 샘플의 접착\n\n면에의 접착제의 도포는 눌러붙일때에 눌러붙인 부분 주위에서 접착제가 밀려나오는 정도에까지 행하였다.\n\n러붙인 부분 주위에서 밀려나온 접착제를 자외선조사기눌\n\n(HLR100T-1 : 센특수광원사제)를 사용하여, 365nm에서의 자외선 강도가 100mW/c㎡인 조건하에서 2분간 처리하여 경화시킨 후, 실온(25℃)에서 60시간 방치함에 의해눌러붙인 부분의 접착제를 경화시켰다.\n\n이상과 같이 하여 치구에 접착시킨 샘플을 만능시험기(AUTO GRAPHAG-\n\n10TB : 시마즈세이사쿠쇼사제)에 세트하여, 전단강도 2mm/분의 조건하에서 샘플이 치구로부터 탈리할 때의 가중을 측정하여, 샘플의 접착면의 표면적(0.64㎠)에서 제거하는 전단접착강도를 구하여, 이 평균치(n=5)를 접착성의 평가기준으로 하였다.\n\n접착제 2 :\n\n접착제로서 변성아크릴레이트계 접착제(하드록 G55 : 덴키카가쿠고교사제의 상품명)를 사용하여, 접착제 1의 경우와 같은 방법으로 접착성의 평가를 하였다.\n\n또, 접착제 2에 있어서는, 치구에의 샘플의 접착은, 접착제를 도포한 샘플을 치구의 접착면의 위에 얹어 놓고, 샘플의 위에서 4kgf(39.2N)의 가중을 10초간 걸어 양자를 눌러붙이고, 실온(25℃)에서 60시간 방치함에 의해 눌러붙인 부분의 접착제를 경화시키는 것에 따라 행하였다.\n\n접착제 3 :\n\n열경화성 에폭시계 접착제(AV138 : 치바가이기사제의 상품명)와 경화제 (HV998 : 치바가이기사제의 상품명)를용적비 5:1의 비율로 혼합하여 접착제 3으로 하고, 접착제 1의 경우와 같은 방법으로 접착성의 평가를 하였다.\n\n또, 접착제 3에 있어서는, 치구에의 샘플의 접착은, 접착제를 도포한 샘플을 치구의 접착면의 위에 얹어 놓고,샘플의 위에서 4kgf(39.2N)의 가중을 10초간 걸어 양자를 눌러붙이고, 100℃에서 30분간 가열함에 의해 눌러붙인 부분의 접착제를 경화시키는 것에 의해 행하였다.\n\n이하에 나타내는 표 3으로부터 명백하듯이, 본 발명에 있어서 형성되는 내식성 피막은 장기간 과혹한 조건하에노출된 경우라도 피막열화가 거의 일어나지 않고, 뛰어난 접착성을 유지하고 있었다.\n\n표 3\n\n피막형성 직후\n\n습윤시험 후\n\n단위 : kg/㎠\n\nn=5\n\n*)접착제의 응집파괴가 일부 있음\n\n접착제 1\n\n215\n\n210\n\n접착제 2\n\n220\n\n210\n\n접착제 3\n\n380\n\n380\n\n*)\n\n산업상 이용 가능성\n\n본 발명에 의하면, 뛰어난 내열성과 접착성을 겸비한 염가인 내식성 피막을 표면에 갖는 희토류계 영구자석, 그제조방법 및 내식성 피막형성 처리액이 제공된다.', '技术领域\n\n稀土类永磁体及其制造方法以及处理液技术领域本发明涉及在表面具有耐热性和密合性优异的廉价的耐蚀膜的稀土类永磁体,其制造方法以及形成耐蚀膜的处理液。\n\n背景\n\n稀土永磁体,例如以Nd-Fe-B永磁体为代表的R-Fe-B永磁体或以Sm-Fe-N永磁体为代表的R-Fe-N永磁体特别是由于使用了廉价且廉价的材料并且具有高的磁性能,因此近年来,R-Fe-B永磁体被用于各种领域。\n\n但是,由于稀土永磁体包含高反应性稀土金属:R,因此它们容易受到大气中氧化腐蚀的影响,并且在未经任何表面处理的情况下使用时,表面可能会暴露于少量酸,碱或湿气中。腐蚀会继续产生生锈,从而导致磁性能下降或不平衡。\n\n此外,生锈的磁铁\n\n当将其放入诸如磁路之类的设备中时,存在锈蚀散布和污染周围零件的风险。\n\n因此,长期以来一直在稀土永磁体的表面上形成各种类型的耐蚀膜。\n\n然而,随着当今稀土永磁体的应用范围的扩大,在表面上形成的耐腐蚀膜具有高的耐腐蚀性,以及在剧烈的温度波动下的耐热性,以及在插入零件时使用的粘合剂。与有机树脂的粘合也需要出色的性能。\n\n此外,形成的耐腐蚀膜\n\n优选便宜。\n\n因此,本发明的目的在于提供一种稀土类永久磁铁,其制造方法以及具有耐蚀性的膜形成处理液,该稀土类永久磁铁的表面具有廉价的耐热性和密合性的耐蚀膜。\n\n发明详述\n\n鉴于以上几点,本发明人在各种研究过程中致力于在稀土永磁体的表面上形成包含碱金属硅酸盐作为构成成分的玻璃状保护膜作为耐蚀膜的方法。\n\n碱式硅酸盐\n\n含有构成成分的膜是长期以来公知的耐蚀膜之一,可以低成本地形成满足上述要求的膜,但是根据本发明人的评论认为该膜具有耐蚀性。发现在包括各种性能方面都不令人满意,但是需要更好的性能改进。\n\n也,\n\n近年来,为了提高玻璃状保护膜的性能,已经进行了各种改良,例如在美国专利第6174609号中,碱金属硅酸盐的3〜10重量%,碱金属硅酸盐的90〜97重量%。已经提出了由热固性树脂作为成分的耐腐蚀涂层,并且通过使用这种构造已经成功地表现出更高的耐腐蚀性,但是已经发现该涂层在耐热性和粘附性方面不一定具有令人满意的性能。我可以。\n\n因此,作为进一步研究的结果,通过将预定量的热塑性树脂均匀地分散在包含硅酸锂作为构成成分的膜中,硅酸锂和热塑性树脂匹配形成均匀的三维网络结构,并且在温度变化剧烈的使用环境下使用。即使存在,也可以获得具有优异的耐热性的耐腐蚀膜,该膜有效地防止了由于膜的热收缩而引起的膜本身的开裂或因膜与材料磁体之间的热膨胀率的差异而引起的开裂以及与各种粘合剂的粘附。业已发现,可获得性能优良且不易引起粘合性下降的耐腐蚀涂层。\n\n通过以上研究过程完成了本发明,并且本发明的稀土永磁体是由硅酸锂和热塑性树脂作为成分组成的耐腐蚀涂层,其中,权利要求1所述。它使用无皂的水溶性乳液树脂形成,并且在表面上具有涂层,其中热塑性树脂以0.1重量%至50重量%的量均匀地分散在涂层中。\n\n此外,根据权利要求2的稀土永磁体,在根据权利要求1的稀土永磁体中,进一步包含硅酸钠作为膜的成分,并且膜中的钠含量其特征在于小于10重量%。\n\n删除\n\n删除\n\n此外,根据权利要求5所述的稀土永磁体,其特征在于,在根据权利要求1所述的稀土永磁体中,所述热塑性树脂是丙烯酸苯乙烯树脂。\n\n另外,本发明第六方面的稀土永磁体的特征在于,在本发明第一方面的稀土永磁体中,每单位磁体表面积的涂覆量为0.01g / m 2至5.0g / m 2。 。\n\n另外,如权利要求7所述,用于制备在其表面上具有包含硅酸锂和热塑性树脂作为构成成分的耐腐蚀膜的稀土永磁体的方法是热塑性树脂的无皂水溶性乳液树脂。分散在硅酸锂水溶液中,制备包含0.1重量%至5重量%的热塑性树脂和2重量%至30重量%的硅酸锂的处理液,并将该处理液涂覆在磁体表面上,然后加热并干燥。因此,其特征在于它是耐腐蚀涂层。\n\n此外,根据权利要求8所述的制造方法,其特征在于,在所述处理液中还包含硅酸钠,并且在根据权利要求7所述的制造方法中,所述处理液中的钠含量为1重量%以下。它的功能。\n\n删除\n\n另外,技术方案10所述的制造方法的特征在于,技术方案7所述的制造方法中,所述热塑性树脂为丙烯酸苯乙烯系树脂。\n\n此外,如权利要求11所述,用于在本发明的稀土永磁体的表面上形成包括硅酸锂和热塑性树脂作为成分的耐腐蚀膜的处理液是作为无皂水溶性乳液树脂的热塑性树脂。其特征在于含有0.1重量%至5重量%和2重量%至30重量%的硅酸锂。\n\n另外,权利要求12所述的处理液在权利要求11所述的处理液中的处理液中还含有硅酸钠,并且所述处理液中的钠含量为1重量%以下。它的功能。\n\n删除\n\n另外,在技术方案14所述的处理液中,在技术方案11所述的处理液中,热塑性树脂是丙烯酸苯乙烯系树脂。\n\n具体实施方式本发明的稀土永磁体是由硅酸锂和热塑性树脂作为成分构成的耐蚀膜,并且该热塑性树脂是无皂的水溶性乳液树脂。其形成和特征在于其在表面上具有涂层,其中热塑性树脂以0.1重量%至50重量%的量均匀地分散在涂层中。\n\n本发明中的耐腐蚀膜含有硅酸锂作为构成成分之一。\n\n硅酸锂基\n\n该膜由通式为Li 2 O·nSiO 2的硅酸锂的水溶液形成,并且基本上具有优异的耐腐蚀性。\n\n在上述通式中,n表示摩尔比(SiO 2 / Li 2 O),并且在本发明中,n通常在1.5至10的范围内使用。\n\n本发明中的耐腐蚀涂层可以仅包含硅酸锂作为碱金属硅酸盐作为成分,但是除了硅酸锂之外,还可以包含硅酸钠(水玻璃),硅酸钾或硅酸铵作为成分。\n\n其中,通过使用硅酸钠作为膜的成分,可以确保膜形成时的良好的膜形成以及对磁铁的牢固的密合性。\n\n另外,如果使用硅酸钠作为膜的组成成分,则即使在膜中存在创伤或裂缝,硅酸钠也微溶于水并渗透并固化在相应部分中,从而使其自愈。它具有吞噬作用。\n\n当使用硅酸钠作为膜的成分时,膜中的钠含量优选为10重量%以下,并且更优选为5重量%以下。\n\n十分之十\n\n当其量超过%时,可能不利地影响要形成的膜的耐水性,这是因为存在耐热性和粘合性可能劣化的可能性。\n\n  作为本发明中的耐腐蚀膜的成分的热塑性树脂的实例包括丙烯酸树脂,丙烯酸苯乙烯树脂,聚酯树脂,聚酰胺树脂,聚碳酸酯树脂等。\n\n它以〜50重量%的量均匀分散。\n\n因为它不弯曲。\n\n薄膜中的热塑性树脂占重量的0.1%\n\n小于0.1重量%的被膜具有优异的密合性和耐热汗性,如果超过50重量%,则树脂在高温下产生表面结块,耐热性降低。这是因为在某些情况下会产生影响。\n\n膜中均匀分散\n\n热塑性树脂的含量优选为1重量%至30重量%,更优选为5重量%至20重量%。\n\n对于本发明中的耐腐蚀膜,制备将热塑性树脂分散在硅酸锂水溶液中的处理液,并将该处理液喷涂在磁体的表面上,或者在将磁体浸入处理液中进行浸涂之后,例如,通过在60℃至300℃的温度条件下加热并干燥1分钟至120分钟而形成。\n\n为了在磁体表面上形成具有优异性能的耐腐蚀膜,重要的是将热塑性树脂均匀地分散在处理液中。\n\n另外,考虑到批量生产\n\n放入后,制备的处理液具有出色的储存稳定性,并且液体寿命长(端口寿命)是理想的。\n\n理想\n\n因此,作为分散在硅酸锂水溶液中的热塑性树脂,使用不添加乳化剂(表面活性剂)的无皂的水溶性乳液树脂。\n\n由于碱金属硅酸盐水溶液表现出碱度(pH10至pH13:该pH不会引起磁腐蚀的问题,并且从工作环境的观点来看是优选的),因此热塑性树脂是水溶性的,并且添加了乳化剂(特别是非离子表面活性剂)。在作为乳液树脂分散的情况下,由于在许多情况下会在液体中发生乳液破坏并发生树脂的凝胶化,因此难以制备使热塑性树脂均匀分散的处理液,其结果是难以制备性能优异的耐蚀膜。这是因为担心它无法形成。\n\n而且,这种处理液当然不是\n\n这是因为由于上述现象,液体寿命也较差。\n\n根据本发明人的研究,通过将丙烯酸类苯乙烯树脂作为热塑性树脂分散在作为无皂的水溶性乳液树脂的硅酸锂水溶液中而制备的处理液,丙烯酸类苯乙烯树脂在处理液中的均匀分散性优异。\n\n因此,这\n\n在使用处理液形成的耐腐蚀膜中,丙烯酸苯乙烯树脂均匀地分散在膜中,从而表现出优异的耐热性和粘附性。\n\n另外,丙烯酸类苯乙烯树脂是指通过使苯乙烯单体和丙烯酸酯单体聚合而得到的树脂。\n\n作为苯乙烯单体,可以使用苯乙烯或α-甲基苯乙烯。\n\n丙烯酸酯\n\n作为单体,丙烯酸甲酯,丙烯酸乙酯,丙烯酸丙酯,丙烯酸丁酯,丙烯酸2-乙基己酯,甲基丙烯酸\n\n可以使用甲基,甲基丙烯酸乙酯,甲基丙烯酸丙酯,甲基丙烯酸丁酯,甲基丙烯酸2-乙基己酯等。\n\n风\n\n直接丙烯酸苯乙烯树脂的实例包括苯乙烯-甲基丙烯酸甲酯共​​聚物,苯乙烯-丙烯酸丁酯共聚物,苯乙烯-甲基丙烯酸甲酯-丙烯酸丁酯共聚物和苯乙烯-甲基丙烯酸丁酯。\n\n作为无皂的水溶性乳液型丙烯酸苯乙烯系树脂,例如,优选使用旭化成工业株式会社的商品名:F-2000。\n\n作为用于形成具有优异性能的抗腐蚀膜的优选处理液,热塑性树脂是不含皂的水溶性乳液树脂,其含量为0.1重量%至5重量%,优选为0.5重量%至3重量%,硅酸锂为2重量%。可以提及含有按重量计30%至30%的处理液,并且优选在该组成范围内适当地调节热塑性树脂以使其均匀地分散在膜中以具有期望的含量。\n\n另外,在处理液中进一步含有硅酸钠作为碱金属硅酸盐的情况下,处理液中的钠含量优选为1重量%以下。\n\n优选本发明中的耐腐蚀膜形成为使得每磁体单位表面积的涂覆量为0.01g / m 2以上(厚度约15nm以上)。\n\n因为有顾虑。\n\n如果该量小于0.01g / m 2,则不能充分发挥作为耐蚀膜的性能,并且对膜附着量的上限没有特别限制,但是如果膜附着量过多,则难以确保对磁体整个表面的均匀附着。担心会对与其他有机树脂的粘合性产生不利影响。\n\n因此,从上述观点出发,膜的附着量的上限优选为5.0g / m 2。\n\n作为用于本发明的稀土类永磁体,可以提及已知的稀土类永磁体,例如R-Fe-B永磁体和R-Fe-N永磁体。\n\n其中,如上所述,基于R-Fe-B的永磁体是优选的,因为它们具有高的磁性能,优异的批量生产性和经济效率以及与膜的优异的粘附性。\n\n这些稀土\n\n流变永磁体中的稀土元素(R)为Nd,Pr,Dy,Ho,Tb和Sm中的至少一种,或La,Ce,Gd,Er,Eu,Tm,Yb,Lu和Y中的至少一种。优选进一步包括物种。\n\n另外,通常具有R中的一个就足够了,但是在实际使用中,出于可用性的便利等原因,可以使用两种或更多种的混合物(例如微金属或阶梯状)。\n\n另外,通过添加Al,Ti,V,Cr,Mn,Bi,Nb,Ta,Mo,W,Sb,Ge,Sn,Zr,Ni,Si,Zn,Hf,Ga中的至少一种,可以改善功率和退磁曲线的角度,改善可制造性,并降低价格。\n\n此外,通过用Co代替Fe的一部分,可以在不损害所获得的磁体的磁特性的情况下提高温度特性。\n\n此外,应用于本发明的稀土永磁体可以是烧结磁体或粘结磁体。\n\n在本发明的耐腐蚀膜的表面上,可以进一步层压单独的膜。\n\n通过采用这种配置,我的\n\n可以增强或补充可食用涂层的性能,或赋予更好的功能性。\n\n实际例子\n\n尽管将通过以下实施例更详细地描述本发明,但是本发明不限于此。\n\n范例A:\n\n例如,如美国专利No.4770723或美国专利No.4792368中所述,将已知的铸锭粉碎并细粉碎,然后进行成型,烧结,热处理和表面处理。在通过以下步骤获得的14Nd79Fe-6B-1Co组合物(at%)的尺寸为长30mm×宽20mm×高3mm的尺寸的板状烧结磁体(以下称为磁体试验片)的表面上形成有耐蚀膜。\n\n1:处理液的制备及其保存稳定性将各种树脂添加到各种碱金属硅酸盐水溶液中,然后用搅拌器混合并搅拌以制备表1所示的15种处理液。\n\n此外,在表1中,树脂a F-2000(商品名)是无皂水溶性乳液型丙烯酸苯乙烯树脂(Asahi Chemicals Co.,Ltd.热塑性树脂),树脂b M6520(商品名)是添加了乳化剂的水溶性乳液型。是丙烯酸苯乙烯系树脂(由Client Polymer制造的热塑性树脂),树脂c是E1022(商品名),是水溶性乳液型环氧树脂(由吉村裕化学株式会社制造,固化剂H-35(商品名)由同一公司制造)。在与()同时加入以制备热固性树脂)。\n\n将得到的处理液(pH为11〜12的任何一种)在40℃下保存2周,除了表1(表1)以外,还研究了保存稳定性的结果(表1中,即使2周后分散性也良好)。 ,表示成分在制备后的4天内发生沉淀和固化\n\n表示组分在制备后1天内发生沉淀和固化。\n\n*一)\n\n  A:硅酸锂(n = 4.5)/硅酸钠(n = 3)= 4/1(重量比)B:硅酸锂(n = 4.5)/硅酸钠(n = 3)= 9/1(重量比)C:硅酸锂(n = 4.5)\n\nD:硅酸锂(n = 4.5)/硅酸钠(n = 3)= 5/4(重量比)E:硅酸钠(n = 3)\n\n* 2)\n\nA:F2000\n\nb:M6520\n\nc:E1022\n\n从表1清楚可见,其中将无皂水溶液乳液树脂分散在碱金属硅酸盐水溶液中的处理液(1至9)具有优异的储存稳定性,并且甚至在从制备处理液起储存2周后仍具有优异的分散性。已指示。\n\n另一方面,将添加了乳化剂的水溶性乳液树脂分散在碱金属硅酸盐水溶液中的处理液(No.10〜14)的保存稳定性差。\n\n2:耐蚀膜的形成及其特性制备了通过用丙酮进行超声波清洗除去附着在表面上的磁性成分的磁性体试验片,并在3小时后浸渍在各处理液中。\n\n之后,将磁体试验片在处理液中拉起,并在200℃下加热干燥20分钟,从而在磁体试验片的表面上形成耐蚀膜。\n\n另外,通过调节空气擦拭的擦拭压力来调节膜的附着量。\n\n表2示出了通过上述方法形成的耐蚀膜的特性。\n\n另外,在表2中,对于在其表面上经历了120次加热和冷却循环的具有抗腐蚀膜的磁体的试件,其耐热和耐腐蚀性能据称每小时保持在室温(25°C)和170°C的气氛中。在80°C x 90%相对湿度的高温高湿条件下进行了润湿测试,结果显示为直到红色生锈的磁性试样表面积的发生率达到1%的时间(平均值为n = 5)。\n\n另外,磁通量变化表示为在上述120次加热和冷却循环之前和之后在其表面上具有耐腐蚀膜的磁体测试片的磁通量变化率(自敏感性因子),并且随后进行了润湿测试(n = 5平均值)。 。\n\n另外,密合性是将20mm×20mm的大提琴带(Nichi Reflector制造的注册商标)粘贴在30mm×20mm的表面上的耐蚀膜上并水平拉动180度时的强度。 /成膜后在室内放置2周后的强度(平均值n = 5)。\n\n从表2显而易见,由处理溶液形成的膜,该处理溶液是通过将热塑性树脂作为无皂的水溶性乳液树脂分散在碱金属硅酸盐水溶液中而制得的,并且该膜中的热塑性树脂以50重量%以下的量均匀分散。发现背面显示出优异的耐腐蚀性。\n\n范例B:\n\n例如,如美国专利No.4770723或美国专利No.4792368中所述,将已知的铸锭粉碎,并且在精细粉碎之后,进行模制,烧结,热处理和表面处理。在所得的14Nd-79Fe-6B1Co组合物(原子%)的直径9mm×3mm高的圆筒形烧结磁铁的表面上,使用实施例A中的处理液4(以下称为磁性体试验片),进行实施例A。同样地,形成耐蚀膜。\n\n对于所形成的耐蚀膜,在成膜后立即进行,在80℃×90%相对湿度的高温高湿条件下保持100小时的湿润试验后,调查对各种粘接剂的密合性。\n\n胶水1:\n\n如下所述,将样品粘附到使用铸铁(S45C)制成的40mm×50mm×60mm的夹具上,该夹具使用在粘结表面上具有JIS R6001标准的#100磨料的金刚石磨石抛光。\n\n使用底漆(Primer 7649:Henkel Japan制造的商标名)。\n\n也就是说,在样品和夹具的粘合表面上\n\n干燥并除去底漆中的溶剂后,将在粘合剂表面上涂有碱性UV固化粘合剂(Loctite 366:汉高日本制造的商标)的样品放在夹具的粘合剂表面上,并在样品上施加4 kgf(39.2 N)的重量。我走了10秒钟,向两侧施压。\n\n另外,样品的附着力\n\n将粘合剂施加到表面上的程度应使得在压制时将粘合剂围绕压制部分推出。\n\n将紫外线照射到从\n\n(HLR100T-1:由Sen Special Light Source生产),在365nm的紫外线强度为100mW / cm2的条件下处理2分钟,然后固化,然后在室温(25℃)下放置60小时,直至粘合剂固化。\n\n如上所述粘附在夹具上的样品用于通用测试仪(AUTO GRAPHAG-\n\n10TB:Shimadzu Seisakusho Co.,Ltd。),通过在2mm / min的剪切强度的条件下测量样品从夹具上脱离时的重量,测量从样品的粘合表面的表面积(0.64cm 2)去除的剪切粘合强度。求出该平均值(n = 5)作为密合性的评价基准。\n\n胶水2:\n\n使用改性的丙烯酸酯类粘合剂(Hardlock G55:Denki Chemicals Co.,Ltd。制造的商品名)作为粘合剂,并且以与粘合剂1的情况相同的方式评价粘合性。\n\n此外,在粘合剂2中,为了将样品粘合到夹具上,将已涂有粘合剂的样品放置在夹具的粘合表面上,将4 kgf(39.2 N)的重量施加在样品上10秒钟,然后在室温下将两者压紧。通过使其在(25℃)下静置60小时来固化加压部分的粘合剂。\n\n胶水3:\n\n以5:1的体积比混合热固性环氧基粘合剂(AV138:千叶Geiggi制造的商标)和固化剂(HV998:千叶Geiggi制造的商标)以制成粘合剂3,并且以与粘合剂1相同的方式粘合。评估了性别。\n\n此外,在粘合剂3中,为了将样品粘附到夹具上,将已施加粘合剂的样品放置在夹具的粘合表面上,将4 kgf(39.2 N)的重量施加在样品上10秒钟,并将两者压在一起。通过在℃下加热30分钟来固化加压部分的粘合剂。\n\n从下面的表3中可以明显看出,即使在苛刻的条件下长时间暴露,在本发明中形成的耐腐蚀涂层也几乎不会引起涂层的劣化,并且保持了优异的粘附性。\n\n表3\n\n成膜后立即\n\n润湿测试后\n\n单位:kg /㎠\n\nn = 5\n\n*)粘合剂的内聚性破坏\n\n胶水1\n\n215\n\n210\n\n胶水2\n\n220\n\n210\n\n胶水3\n\n380\n\n380\n\n*)\n\n工业可用性\n\n发明的有益效果根据本发明,提供了一种稀土永磁体,其具有廉价的在其表面上具有优异的耐热性和粘附性的耐蚀膜,其制造方法以及用于形成耐蚀膜的处理液。');
INSERT INTO `os_patent_instruction_text` VALUES (12966, 22795, 'Technical Field\n\n[0001]The invention relates to a rare earth metal-based permanent magnet which has on the surface an inexpensive corrosion-resistant film combining excellent heat-resistance with excellent adhesiveness and a process for producing the permanent magnet.\n\nBackground Art\n\n[0002]Rare earth metal-based permanent magnets, for instance, R-Fe-B based permanent magnets represented by a Nd-Fe-B based permanent magnet, or R-Fe-N based permanent magnets represented by a Sm-Fe-N based permanent magnet, etc., utilize inexpensive materials abundant in resources and possess superior magnetic properties, and particularly among them, R-Fe-B based permanent magnets are employed today in various fields.\n\n[0003]However, since a rare earth metal-based permanent magnet contains a highly reactive rare earth metal, i.e. , R, they are apt to be oxidized and corroded in ambient, and in case they are used without applying any surface treatment, corrosion tends to proceed from the surface in the presence of small acidic or alkaline substance or water to generate rust, and this brings about the degradation and the fluctuation in magnetic properties. Moreover, in case such a rusty magnet is embedded in a magnetic circuit and a like device, there is fear of scattering rust as to contaminate peripheral components.\n\n[0004]Accordingly, it has been well known for long to form various types of corrosion-resistant film on the surface of a rare earth metal-based permanent magnet.\n\n[0005]On the other hand, with recent increase in the application area of rare earth metal-based permanent magnets, the corrosion-resistant films that are formed on the surface thereof are required to possess excellent performance for not only high corrosion-resistance, but also heat-resistance when used under severe temperature changing environmental conditions as well as adhesiveness with organic resins represented by adhesives used in embedding the components. Furthermore, it is desired that the formed corrosion-resistant film is inexpensive.\n\n[0006]Accordingly, the objectives of the invention is to provide a rare earth metal-based permanent magnet which has on the surface an inexpensive corrosion-resistant film combining excellent heat-resistance with excellent adhesiveness and to provide a process for producing the permanent magnet. In JP 61231186 an aqueos composition for rust preventing coating is shown, wherein 1-30 wt% soluble lithium silicate and 0.01-10 wt% soluble lithium nitrile is added to water for dilution.\n\nDisclosure of the Invention\n\n[0007]In the light of such circumstances, the inventors have conducted extensive studies, and in due course, they have paid attention to the process of forming a glassy protective film containing alkali silicate as the constituting component of the corrosion-resistant film that is formed on the surface of the rare earth metal-based permanent magnet. The corrosion-resistant film containing alkali silicate as the constituting component is one of the corrosion-resistant films known for long, and it satisfies the requirement above in the point that it can be formed at low cost; however, in due course of the inventors\' study, it has been found that the performances of the film, inclusive of the corrosion-resistance, are not yet sufficient, and that it was necessary to further improve the performances. Furthermore, various studies are made recently on the glassy protective film with the aim of improving the performances; for instance, in US Patent No. 6174609 is proposed a corrosion-resistant film containing from 3 wt% to 10 wt% of alkali silicate and from 90 wt% to 97 wt% of a thermosetting resin as the constituting components, and such a constitution enables a corrosion-resistant film with higher corrosion-resistance. However, the heat-resistance and adhesiveness of the corrosion-resistant film were found still insufficient.\n\n[0008]Accordingly, further studies were conducted, and it has been found that, by uniformly dispersing a predetermined amount of thermoplastic resin in a film containing lithium silicate as the constituting component, lithium silicate and the thermoplastic resin congruently form a uniform three-dimensional network structure, that a corrosion-resistant film having excellent heat-resistance can be obtained, which, even during use under severe temperature changing environmental conditions, effectively prevents the cracks that generate in the film itself ascribed to the thermal shrinking of the film, or the cracks that generate between the film and the base magnet attributed to the difference in thermal expansion ratio, and that a corrosion-resistant film , which exhibits not only excellent adhesiveness with various types of adhesives but also less tendency to cause degradation in adhesiveness, can be obtained.\n\n[0009]The invention has been accomplished through the research process above, and a rare earth metal-based permanent magnet of the invention, as disclosed in the first claim, has on the surface a corrosion-resistant film containing lithium silicate and a thermoplastic resin as the constituting components, the film contains uniformly dispersed therein the thermoplastic resin at a content of 0.1 wt% to 50 wt%.\n\n[0010]The rare earth metal-based permanent magnet disclosed in the second claim of the invention is the rare earth metal-based permanent magnet as claimed in claim 1, characterized by that the film further contains sodium silicate as the constituting component.\n\n[0011]The rare earth metal-based permanent magnet disclosed in the third claim of the invention is the rare earth metal-based permanent magnet as claimed in claim 2, characterized by that the film has sodium content of 10 wt% or less.\n\n[0012]The rare earth metal-based permanent magnet disclosed in the fourth claim of the invention is the rare earthmetal-based permanent magnet as claimed in claim 1, characterized by that the thermoplastic resin is a soap-free aqueous emulsion of resin.\n\n[0013]The rare earth metal-based permanent magnet disclosed in the fifth claim of the invention is the rare earth metal-based permanent magnet as claimed in claim 1, characterized by that the thermoplastic resin is acrylic-styrene resin.\n\n[0014]The rare earth metal-based permanent magnet disclosed in the sixth claim of the invention is the rare earth metal-based permanent magnet as claimed in claim 1, characterized by that the magnet has the film at a coverage of 0.01 g/m 2[0015]A process for producing the rare earth metal-based permanent magnet of the invention, as disclosed in the seventh claim, comprises: preparing a treating liquid containing from 0.1 wt% to 5 wt% of a thermoplastic resin and from 2 wt% to 30 wt% of lithium silicate by dispersing the thermoplastic resin in the form of a soap-free aqueous emulsion of resin in an aqueous solution of lithium silicate, and after applying the treating liquid to the surface of the magnet, heating and drying it to obtain the corrosion-resistant film.\n\n[0016]The process disclosed in the eighth claim of the invention is the process as claimed in claim 7, wherein the treating liquid further contains sodium silicate.\n\n[0017]The process disclosed in the ninth claim of the invention is the process as claimed in claim 8, wherein the sodium content of the treating liquid is 1 wt% or less.\n\n[0018]The process disclosed in the tenth claim of the invention is the production process as claimed in claim 7, wherein the thermoplastic resin is acrylic-styrene resin.\n\nBest Mode for Carrying Out the Invention\n\n[0019]The rare earth metal-based permanent magnet of the invention has on the surface a corrosion-resistant film containing lithium silicate and a thermoplastic resin as the constituting components, the film contains uniformly dispersed therein the thermoplastic resin at a content of 0.1 wt% to 50 wt%.\n\n[0020]The corrosion-resistant film of the invention contains lithium silicate as one of the constituting components. The corrosion-resistant film containing lithium silicate as the constituting component is formed from an aqueous solution of lithium silicate expressed by general formula of Li 2 O·nSiO 2 . which, by nature, has excellent corrosion-resistance. In the general formula, n represents molar ratio (SiO 2 /Li 2 O), and in the invention, generally employed are those having n in the range of 1.5 to 10.\n\n[0021]The corrosion-resistant film of the invention contains lithium silicate as the alkali silicate component, but it may further contain sodium silicate (water glass), potassium silicate, or ammonium silicate as the constituting component in addition to lithium silicate. Among them, it is possible to assure favorable filming properties during forming the film and tight adhesiveness with the magnet by using sodium silicate as the constituting component of the film. Furthermore, by using sodium silicate as the constituting component of the film, in case there should be any external flaws or cracks in the film, little sodium silicate dissolves into water, and it penetrates and solidifies in the flaws or cracks to exhibit self-repairing corrosion-resistant function. In case sodium silicate is used as the constituting component of the film, it is preferred that the content thereof in the film is controlled to 10 wt% or less, and more preferably, 5 wt% or less, based on sodium content. If the content should exceed 10 wt%, it may cause unfavorable influence on the water-resistance of the formed film, and this is feared to bring about the degradation in heat-resistance and adhesiveness.\n\n[0022]As the thermoplastic resin usable as the constituting component of the corrosion-resistant film of the invention, there can be mentioned, for instance, acrylic resin, acrylic-styrene resin, polyester resin, polyamide resin, polycarbonate resin, and the like. The thermoplastic resin is uniformly dispersed in the film at a content of 0.1 wt% to 50 wt%. In case the content should be less than 0.1 wt%, the formed film cannot exhibit excellent adhesiveness or heat-resistance. On the other hand, if the content should exceed 50 wt%, the resin undergoes surface coagulation at high temperatures as to cause not only impaired heat-resistance, but also influences on adhesiveness in some types of adhesives. The content of the thermoplastic resin that is uniformly dispersed in the film is preferably in a range of 1 wt% to 30 wt%, and more preferably, 5 wt% to 20 wt%.\n\n[0023]The corrosion-resistant film of the invention is formed by preparing a treating liquid by dispersing a thermoplastic resin in an aqueous solution of lithium silicate, and after applying spray coating of the treating liquid to the surface of the magnet or immersion coating by immersing the magnet in the treating liquid, by heating and drying it under a temperature condition of 60°C to 300°C for 1 minute to 120minutes, for instance. In order to form a corrosion-resistant film having excellent performance on the surface of the magnet, it is a key to uniformly disperse the thermoplastic resin in the treating liquid. Furthermore, by taking into consideration of mass production, it is ideal that the treating liquid thus prepared has excellent storage stability and a long pot life. In the light of such circumstances, it is preferred to use a soap-free aqueous emulsion of resin containing no added emulsifier (surface-activating agent) as the thermoplastic resin to be dispersed in the aqueous solution of lithium silicate. Since the aqueous solution of alkali silicate is alkaline (pH10 to pH13; liquid prepared in such pH range is free from problems of corroding the magnet and is also preferred from the environmental viewpoint on handling), in case the thermoplastic resin is dispersed in the form of an aqueous emulsion of resin containing added therein an emulsifier (particularly, nonionic surface-activating agent), there often causes emulsion destruction in the liquid and gelation of the resin leading to difficulties in preparing the treating liquid having the thermoplastic resin uniformly dispersed therein. Such a case may result in the failure of forming a corrosion-resistant film with excellent performance. Moreover, such a treating liquid is, as a matter of course, inferior concerning pot life because of the phenomenon described above.\n\n[0024]According to the inventors\' study, it appears that a treating liquid prepared by dispersing acrylic-styrene resin as the thermoplastic resin in the form of a soap-free aqueous emulsion of resin in an aqueous solution of lithium silicate excellently shows uniform dispersibility of acrylic-styrene resin in the treating liquid. Thus, the corrosion-resistant film formed by using the treating liquid contains acrylic-styrene resin uniformly dispersed in the film to exhibit excellent heat-resistance and adhesiveness. Acrylic-styrene resin signifies resin obtained by polymerizing a styrene monomer and an acrylic acid ester monomer. As the styrene monomer, usable are styrene, α-methylstyrene, and the like. As the acrylic acid ester monomer , testable are methyl acrylate, ethyl acrylate, propyl acrylate, butyl acrylate, 2-ethylhexyl acrylate, methyl methacrylate, ethyl methacrylate, propyl methacrylate, butyl methacrylate, 2-ethylhexyl methacrylate, and the like. Preferred acrylic-styrene resins include styrene - methyl methacrylate copolymer, styrene - butyl acrylate copolymer, styrene - methyl methacrylate - butyl acrylate copolymer, styrene - butyl methacrylate, and the like. As a soap-free aqueous emulsion type acrylic-styrene resin, favorably usable is, for instance F-2000 (trademark), a product of Asahi Kasei Corporation.\n\n[0025]As a favorable treating liquid for forming a corrosion-resistant film having excellent performance, there can be mentioned a treating liquid containing from 0.1 wt% to 5 wt%, preferably from 0.5 wt% to 3 wt%, of a thermoplastic resin in the form of a soap-free aqueous emulsion of resin, together with from 2 wt% to 30 wt% of lithium silicate, and it is preferred that the treating liquid is properly prepared in this composition range in such a manner that the thermoplastic resin uniformly dispersed in the film is contained in the desired amount. In case sodium silicate is incorporated as an alkali silicate in the treating liquid, it is preferred that sodium content of the treating liquid is 1 wt% or less.\n\n[0026]The corrosion-resistant film of the invention is preferably formed in such a manner that the magnet has the film at a coverage of 0.01 g/m 2[0027]As the rare earth metal-based permanent magnets applicable to the invention, there can be mentioned known rare earth metal-based permanent magnets, for example, R-Fe-B based permanent magnets, R-Fe-N based permanent magnets, and the like. Among them, R-Fe-B based permanent magnets are preferred, as described above, from the viewpoint of possessing high magnetic properties, of having excellent mass productivity as well as economical advantage, and of exhibiting excellent adhesiveness with the film. The rare earth element (R) of these rare earth metal-based permanent magnets is preferably at least one selected from Nd, Pr, Dy, Ho, Tb, and Sm, or at least one selected from La, Ce, Gd, Er, Eu, Tm, Yb, Lu, and Y.\n\n[0028]In general, one of the aforementioned rare earth metals is sufficient for use as R, but in practice, from the viewpoint of ease in availability and the like, it is possible to use a mixture of two or more (misch metal, didymium and the like).\n\n[0029]Furthermore, by adding at least one selected from Al, Ti, V, Cr, Mn, Bi, Nb, Ta, Mo, W, Sb, Ge, Sn, Zr, Ni, Si, Zn, Hf, and Ga, it is possible to improve the coercive force, the rectangularity of a demagnetizing curve, and productivity, or to reduce cost. Furthermore, by substituting a part of Fe with Co, the temperature characteristics of the resulting magnet can be improved without impairing the magnetic properties.\n\n[0030]The rare earth metal-based permanent magnet with which the invention applied may be a sintered magnet or a bonded magnet.\n\n[0031]Further, an additional film may be formed as a laminate on the surface of the corrosion-resistant film of the invention. By employing such a constitution, the characteristics of the corrosion-resistant film can be enforced or complemented, or additional function can be provided to the film.\n\nEXAMPLE\n\n[0032]The invention is described in further detail below by way of examples, but it should be understood that the invention is not only limited thereto.\n\nExample A:\n\n[0033]According to disclosures of, for example, US Patent No. 4770723 or US Patent No. 4792368, a known cast ingot was pulverized and then subjected sequentially to a pressing, a sintering, a heat treatment and a surface working, thereby producing a flat-plate sintered magnet having the size of 30 mm in length, 20 mm in width and 3 mm in height, with the composition of 14Nd-79Fe-6B-1Co (at%)(which is referred to hereinafter as bulk magnet test piece). A corrosion-resistant film was formed on the surface of the thus obtained bulk magnet test piece according to the following process.\n\n1: Preparation of treating liquid and the storage stability thereof\n\n[0034]Various types of resins were added into various types of aqueous solutions of alkali silicates, and were each mixed and stirred using a stirrer to obtain 15 types of treating liquids as shown in Table 1. In Table 1, resin a is F-2000 (trademark), a soap-free aqueous emulsion type acrylic-styrene resin (a thermoplastic resin of Asahi Kasei Corporation.); resin b is M6520 (trademark), an emulsifier-added aqueous emulsion type acrylic-styrene resin (a thermoplastic resin of Clariant Polymers K.K.); and resin c is E1022 (trademark), an emulsifier-added aqueous emulsion type epoxy resin (a resin produced by Yoshimura Oil Chemical Co., Ltd., which is a thermosetting resin obtained by the addition of the hardener H-35 (trademark) provided by the same company).\n\n[0035]The thus obtained treating liquids (whose pH values all fall in a range of 11 to 12) were each stored for 2 weeks at 40°C to investigate their storage stability, and the results are also given in Table 1 (in Table 1, \"fair\" means that a favorable dispersion is obtained after 2 weeks from the preparation time, \"poor\" means that solid deposit of the components was found to generate within 4 days, and \"very poor\" means that solid deposit of the components was found to generate within 1 day). \n\nTable 1\n\nTreating liquid No.Aqueous solution of alkali silicate used as the baseResin addedStability of treating liquid\n\nType  1)Content of alkali silicate (wt%)Na content (wt%)Type  2)Resin content in treating liquid (wt%)\n\n1A100.4a0.5fair\n\n2A100.4a1.0fair\n\n3B100.2a1.5fair\n\n4A100.4a2.0fair\n\n5C100a2.0fair\n\n6C50a5.0fair\n\n7A150.6a0.5fair\n\n8D100.9a1.0fair\n\n9A10.04a10.0fair\n\n10A100.4b1.0poor\n\n11A100.4b2.0poor\n\n12A100.4b5.0very poor\n\n13E101.9b1.0poor\n\n14A10.04c10.0poor\n\n15A100.4-0fair\n\n*1) A: Lithium silicate (n=4.5)/sodium silicate (n=3) = 4/1 (weight ratio) B: Lithium silicate (n=4.5)/sodium silicate (n=3) = 9/1 (weight ratio) C: Lithium silicate (n=4.5) D: Lithium silicate (n=4.5)/sodium silicate (n=3) = 5/4 (weight ratio) E: Sodium silicate (n=3) *2) a: F2000 b: M6520 c: E1022\n\n                       \n\n[0036]As can be clearly understood from Table 1, the treating liquids (Nos. 1 to 9) containing the soap-free aqueous emulsion of resin dispersed in aqueous solution of alkali silicate all showed excellent storage stability, and exhibited excellent dispersibility after storing for two weeks from the preparation time of the treating liquids. On the other hand, the treating liquids (Nos. 10 to 14) containing the emulsifier-added aqueous emulsion of resin dispersed in aqueous solution of alkali silicate all showed inferior storage stability.\n\n2: Formation of corrosion-resistant film and the properties thereof\n\n[0037]After removing the adhered magnetic powder from the surface of the bulk magnet test pieces by means of ultrasonic cleaning in acetone, the test pieces were immersed in each of the treating liquids 3 hours after preparation. Then, the bulk magnet test pieces were each drawn out of the treating liquids, and were heated and dried at 200°C for 20 minutes to form the corrosion-resistant film on the surface of each test piece. The coverage of the film was adjusted by controlling the wiping pressure of air wiping.\n\n[0038]The properties of the corrosion-resistant films thus formed are shown in Table 2. In Table 2, the heat-resistance and corrosion-resistance is evaluated by subjecting the bulk magnet test piece having the corrosion-resistant film on the surface thereof to 120 times of heating and cooling cycles, i.e., repeating 120 times the set of holding at room temperature (25°C) for 1 hour and then holding at 170°C for 1 hour in the atmosphere, then subjecting to humidity test comprising holding the resulting test piece under high temperature and high humidity condition of 80°C and 90% relative humidity to measure the time elapsed until red rust generated on 1% of the surface of the bulk magnet test piece (an average of n=5). The change in magnetic flux is shown by taking the change ratio (demagnetization ratio) for before and after carrying out the 120 times of heating and cooling cycles and the subsequent humidity test (an average of n=5) on the bulk magnet test piece having the corrosion-resistant film on the surface thereof. The adhesiveness is shown by adhering a 20 mm by 20 mm size Cellotape (registered trademark of Nichiban Co., Ltd.) to 30 mm by 20 mm size surface of the corrosion-resistant film, measuring the strength on pulling off the Cellotape in the 180 degree horizontal direction, and expressing the adhesiveness by \"(the strength immediately after forming the corrosion-resistant film)/(the strength after holding the corrosion-resistant film for 2 weeks in room)\" (average of n=5). \n\nTable 2\n\nTreating liquid No.Coverage of film (g/m 2Resin content in film (wt%)Na content in film (wt%)Heat-resistance corrosion-resis tance (hours)Change in magnetic flux (%)Adhesiveness (g/400 mm 2Evaluation\n\n10.84.83.6192380/350Example\n\n20.89.13.5192390/370Example\n\n30.813.01.8216380/370Example\n\n40.816.73.2216400/380Example\n\n50.816.7216380/380Example\n\n63.050.00192380/350Example\n\n71.53.24.0216380/350Example\n\n80.89.18.2192370/350Example\n\n90.890.00.3962350/300Comparative\n\n100.89.11.7962350/240Comparative\n\n110.816.71.6962330/250Comparative\n\n120.833.31.3722300/200Comparative\n\n130.89.117.3962330/150Comparative\n\n140.890.00.31442330/320Comparative\n\n150.803.8144370/300Comparative\n\n                    \n\n[0039]It is clearly understood from Table 2 that the films formed from the treating liquid prepared by dispersing a thermoplastic resin in the form of a soap-free aqueous emulsion of resin in aqueous solution of alkali silicate and containing the thermoplastic resin uniformly dispersed in the film at a content of 50 wt% or less show excellent corrosion-resistance.\n\nExample B:\n\n[0040]According to disclosures of, for example, US Patent No. 4770723 or US Patent No. 4792368, a known cast ingot was pulverized and then subjected sequentially to a pressing, a sintering, a heat treatment and a surface working, thereby producing a cylindrical sintered magnet having the size of 9 mm in diameter and 3 mm in height, with the composition of 14Nd-79Fe-6B-1Co (at%)(which is referred to hereinafter as bulk magnet test piece). A corrosion-resistant film was formed on the surface of the thus obtained bulk magnet test piece using the treating liquid 4 employed in Example A in the same manner as that described in Example A.\n\n[0041]The adhesiveness of the thus formed corrosion-resistant film with various types of adhesives was evaluated immediately after forming the film and after subjecting it to humidity test by allowing to stand for 100 hours under high temperature and high humidity condition of 80°C and 90% relative humidity.\n\nAdhesive 1:\n\n[0042]The sample was adhered to the adhesion plane of a cast iron (S45C) jig having the size of 40 mm by 50 mm by 60 mm that was subjected to polishing using diamond grinding stone having #100 abrasives according to JIS R6001 standard in the following manner. More specifically, a primer (Primer 7649: trademark of Henkel Japan K.K.) was applied to both adhesion planes of the sample and the jig. After drying for removal of the solvent in the primer, the sample having an anaerobic ultraviolet-curable adhesive (Loctite366: trademark of Henkel Japan K.K.) applied to the adhesion plane was mounted on the adhesion plane of the jig, and they were both pressure adhered by applying a load of 4 kgf (39.2 N) on the sample for 10 seconds. In this case, the adhesive was applied to the sample adhesion plane in such a manner that the adhesive should leak out from the periphery of the pressure adhered portion during the pressure adhesion. The adhesive squeezed out from the periphery of the pressure adhered portion was cured by irradiating 365 nm ultraviolet radiation at an intensity of 100mW/cm 2[0043]The adhesiveness was evaluated in the same manner as in the case of adhesive 1, except for using amodified acrylate-based adhesive (HARDLOC G55: trademark of DENKI KAGAKU KOGYO KABUSHIKI KAISHA) as the adhesive. In this case using adhesive 2, the sample was adhered to the jig by mounting the sample applied with the adhesive on the adhesion plane of the jig, pressure adhering by applying a load of 4 kgf (39.2 N) on the sample for 10 seconds, and by allowing the sample to stand at room temperature (25°C) for 60 hours to cure the adhesive in the pressure adhered portion.\n\nAdhesive 3:\n\n[0044]The adhesiveness was evaluated in the same manner as in the case of adhesive 1, except for using adhesive 3 obtained by mixing a thermosetting epoxy-based adhesive (AV138: trademark of Ciba-Geigy Corp.) and a hardener (HV998: trademark of Ciba-Geigy Corp.) at a volume ratio of 5:1. In this case using adhesive 3, the sample was adhered to the jig by mounting the sample applied with the adhesive on the adhesion plane of the jig, pressure adhering by applying a load of 4 kgf (39.2 N) on the sample for 10 seconds, and by heating the sample and the jig to 100°C for 30 minutes to cure the adhesive in the pressure adhered portion.\n\n[0045]It is clearly understood from Table 3 that the corrosion-resistant film formed according to the invention maintains excellent adhesiveness free from deterioration of the film even in case it is exposed to severe conditions for a long term. \n\nTable 3\n\nAdhesive 1Adhesive 2Adhesive 3\n\nOn forming film215220380\n\nAfter humidity test210210380 *)\n\nUnit: kg/cm 2\n\n         \n\nIndustrial Applicability\n\n[0046]The invention provides a rare earth metal-based permanent magnet which has on the surface an inexpensive corrosion-resistant film combining excellent heat-resistance with excellent adhesiveness and provides a process for producing the permanent magnet.', '技术领域 \n\n [0001] 本发明涉及一种稀土金属基永磁体及其制造方法,该稀土金属基永磁体在表面上具有廉价的耐腐蚀膜,该膜兼具优异的耐热性和优异的粘合性。 \n\n  背景技术 \n\n [0002] 稀土金属永磁体,例如,以Nd-Fe-B基永磁体为代表的R-Fe-B基永磁体,或以Sm-Fe-N基永磁体为代表的R-Fe-N基永磁体 磁体等利用资源丰富的廉价材料并具有优异的磁性能,特别是其中,R-Fe-B基永磁体如今在各个领域中使用。 \n\n [0003] 但是,由于稀土金属系永磁体含有反应性高的稀土金属即R,因此容易在环境中被氧化腐蚀,在不进行表面处理的情况下使用,容易发生腐蚀。 在少量的酸性或碱性物质或水的存在下会从表面产生锈蚀,这会导致磁性能的下降和波动。 此外,在将这种生锈的磁铁埋入磁路等的情况下,担心会散布生锈而污染周围的部件。 \n\n [0004] 因此,众所周知,在稀土金属类永磁体的表面上形成各种类型的耐蚀膜。 \n\n [0005] 另一方面,随着近来稀土金属基永磁体的应用领域的增加,要求在其表面上形成的耐腐蚀膜不仅具有高耐腐蚀性而且还具有优异的耐热性。 在严酷的温度变化环境条件下使用时具有良好的耐腐蚀性,以及与以嵌入组件的粘合剂为代表的有机树脂的粘合性。 此外,期望所形成的耐蚀膜便宜。 \n\n [0006] 因此,本发明的目的是提供一种稀土金属基永磁体,其在表面上具有兼具优异的耐热性和优异的粘合性的廉价的耐腐蚀膜,并且提供了一种用于生产永磁体的方法。 在JP 61231186中显示了用于防锈涂层的水性组合物,其中将1-30重量%的可溶性硅酸锂和0.01-10重量%的可溶性腈腈加入水中以进行稀释。 \n\n  发明内容 \n\n [0007] 鉴于这种情况,发明人进行了广泛的研究,并且在适当的时候,他们已经注意到形成包含碱金属硅酸盐作为在其上形成的耐腐蚀膜的构成成分的玻璃状保护膜的方法。 稀土金属基永磁体的表面。 包含碱金属硅酸盐作为构成成分的耐蚀膜是长期以来公知的耐蚀膜之一,并且可以低成本地满足上述要求。 然而,在发明人研究的适当过程中,已经发现包括抗腐蚀性在内的膜的性能还不够,并且有必要进一步提高性能。 此外,最近为了提高性能,对玻璃状保护膜进行了各种研究。 例如,在美国专利No.6174609中提出了一种耐腐蚀膜,其包含3重量%至10重量%的碱金属硅酸盐和90重量%至97重量%的热固性树脂作为构成成分,并且这种构造 可以形成具有更高耐腐蚀性的耐蚀膜。 然而,发现耐蚀膜的耐热性和粘合性仍然不足。 \n\n [0008] 因此,进行了进一步的研究,发现通过将预定量的热塑性树脂均匀地分散在包含硅酸锂作为构成成分的膜中,硅酸锂和热塑性树脂可一致地形成均匀的三维网络结构, 可以得到具有优异耐热性的耐腐蚀膜,即使在严酷的温度变化环境条件下使用时,也可以有效地防止由于膜的热收缩而在膜本身中产生的裂纹或 归因于热膨胀率的差异,在膜与基体磁体之间产生了不均匀的腐蚀,并且可以获得不仅具有与各种类型的粘合剂的优异的粘合性而且具有较少的引起粘合性降低的趋势的耐腐蚀膜。 \n\n [0009] 本发明是通过上述研究过程完成的,并且,如权利要求1中公开的本发明的稀土金属基永磁体在表面上具有包含硅酸锂和热塑性树脂作为构成成分的耐腐蚀膜。 在该组分中,该膜包含以0.1重量%至50重量%的含量均匀分散在其中的热塑性树脂。 \n\n [0010] 本发明的第二权利要求中公开的稀土金属基永磁体是根据权利要求1所述的稀土金属基永磁体,其特征在于,所述膜还包含硅酸钠作为构成成分。 \n\n [0011] 本发明的第三权利要求中公开的稀土金属基永磁体是根据权利要求2所述的稀土金属基永磁体,其特征在于,所述膜的钠含量为10重量%以下。 \n\n [0012] 本发明的第四方面中所公开的稀土金属基永磁体是根据权利要求1中所述的稀土金属基永磁体,其特征在于,所述热塑性树脂是树脂的无皂水乳液。 \n\n [0013] 技术方案5所述的稀土类永磁体是技术方案1所述的稀土类永磁体,其特征在于,所述热塑性树脂为丙烯酸-苯乙烯系树脂。 \n\n [0014] 本发明的第六方面的稀土金属类永磁体是根据权利要求1所述的稀土金属类永磁体,其特征在于,所述磁体的被膜覆盖率为0.01g / m 2。 [0015] 第七权利要求中公开的本发明的稀土金属基永磁体的生产方法包括:制备处理液,所述处理液包含0.1wt%至5wt%的热塑性树脂和2wt%至30wt%。 通过将热塑性树脂以无皂的树脂水乳液的形式分散在硅酸锂的水溶液中,然后将处理液涂到磁体表面上,加热并干燥以获得腐蚀 膜。 \n\n [0016] 本发明的第八方面所述的方法是根据权利要求7所述的方法,其中,所述处理液还含有硅酸钠。 \n\n [0017] 本发明的第九方面的方法是根据权利要求8所述的方法,其中,处理液的钠含量为1重量%以下。 \n\n [0018] 本发明的第十权利要求中公开的方法是根据权利要求7所述的制造方法,其中,热塑性树脂是丙烯酸-苯乙烯树脂。 \n\n  实施发明的最佳方式 \n\n [0019] 本发明的稀土金属基永磁体在表面上具有包含硅酸锂和热塑性树脂作为构成成分的耐腐蚀膜,该膜中均匀分散有热塑性树脂,其含量为0.1wt%至50wt%。 重量%。 \n\n [0020] 本发明的耐腐蚀膜含有硅酸锂作为构成成分之一。 包含硅酸锂作为构成成分的耐蚀膜由通式为Li 2 O·nSiO 2的硅酸锂的水溶液形成。 本质上具有极好的耐腐蚀性。 在通式中,n表示摩尔比(SiO 2 / Li 2 O),并且在本发明中,通常使用n在1.5至10范围内的那些。 \n\n [0021] 本发明的耐腐蚀膜包含硅酸锂作为碱金属硅酸盐成分,但是除了硅酸锂之外,它还可以包含硅酸钠(水玻璃),硅酸钾或硅酸铵作为构成成分。 其中,通过使用硅酸钠作为膜的构成成分,可以确保成膜时的良好的成膜性,与磁铁的密合性。 此外,通过使用硅酸钠作为膜的构成成分,在膜中应该有任何外部缺陷或裂缝的情况下,几乎没有硅酸钠溶解在水中,并且渗透并固化在该缺陷或裂缝中以表现出自我修复。 耐腐蚀功能。 在使用硅酸钠作为膜的构成成分的情况下,基于钠含量,优选将其在膜中的含量控制为10重量%以下,更优选为5重量%以下。 如果该含量超过10wt%,则可能对所形成的膜的耐水性产生不利影响,并且担心这会导致耐热性和粘合性降低。 \n\n [0022] 作为可用作本发明的耐蚀膜的构成成分的热塑性树脂,例如可以举出丙烯酸树脂,丙烯酸苯乙烯树脂,聚酯树脂,聚酰胺树脂,聚碳酸酯树脂等。 热塑性树脂以0.1重量%至50重量%的含量均匀地分散在膜中。 如果该含量小于0.1重量%,则形成的膜不能表现出优异的粘合性或耐热性。 另一方面,如果含量超过50重量%,则树脂在高温下发生表面凝集,不仅导致耐热性降低,而且对某些类型的粘合剂的粘合性产生影响。 均匀分散在膜中的热塑性树脂的含量优选在1重量%至30重量%的范围内,并且更优选在5重量%至20重量%的范围内。 \n\n [0023] 通过将热塑性树脂分散在硅酸锂的水溶液中来制备处理液,然后将处理液喷涂到磁体表面上,或者通过将磁体浸入到浸液涂层中,来形成本发明的耐腐蚀膜。 在处理液中,例如通过在60℃至300℃的温度条件下加热并干燥1分钟至120分钟来进行处理。 为了在磁体表面上形成具有优异性能的耐腐蚀膜,关键在于将热塑性树脂均匀地分散在处理液中。 此外,考虑到批量生产,理想的是,由此制备的处理液具有优异的储存稳定性和长的适用期。 考虑到这种情况,优选使用不包含添加的乳化剂(表面活化剂)的树脂的无皂水性乳液作为热塑性树脂,以分散在硅酸锂水溶液中。 由于碱性硅酸盐的水溶液是碱性的(pH10至pH13;在该pH范围内制备的液体没有腐蚀磁体的问题,并且从处理的环境角度考虑也是优选的),如果热塑性树脂以以下形式分散: 在其中添加了乳化剂(特别是非离子表面活化剂)的树脂的水性乳液的情况下,常常引起液体中乳液的破坏和树脂的凝胶化,从而导致难以制备其中均匀分散有热塑性树脂的处理液。 这种情况可能导致无法形成具有优异性能的耐腐蚀膜。 此外,由于上述现象,这种处理液当然在适用期方面较差。 \n\n [0024] 根据发明人的研究,似乎通过将丙烯酸酯-苯乙烯树脂以无皂的树脂水乳液形式分散在硅酸锂水溶液中而制备的处理液,具有优异的丙烯酸-丙烯酸酯的均匀分散性。 处理液中的苯乙烯树脂。 因此,通过使用处理液形成的耐腐蚀膜包含均匀分散在膜中的丙烯酸-苯乙烯树脂,以表现出优异的耐热性和粘合性。 丙烯酸-苯乙烯树脂表示通过聚合苯乙烯单体和丙烯酸酯单体获得的树脂。 作为苯乙烯单体,可以使用苯乙烯,α-甲基苯乙烯等。 作为丙烯酸酯单体,可测试的有丙烯酸甲酯,丙烯酸乙酯,丙烯酸丙酯,丙烯酸丁酯,丙烯酸2-乙基己酯,甲基丙烯酸甲酯,甲基丙烯酸乙酯,甲基丙烯酸丙酯,甲基丙烯酸丁酯,甲基丙烯酸2-乙基己酯等。 优选的丙烯酸-苯乙烯树脂包括苯乙烯-甲基丙烯酸甲酯共​​聚物,苯乙烯-丙烯酸丁酯共聚物,苯乙烯-甲基丙烯酸甲酯-丙烯酸丁酯共聚物,苯乙烯-甲基丙烯酸丁酯等。 作为无皂的水性乳液型丙烯酸-苯乙烯树脂,优选使用旭化成公司的产品例如F-2000(商标)。 \n\n [0025] 作为用于形成具有优异性能的耐腐蚀膜的有利处理液,可以提及含有0.1wt%至5wt%,优选0.5wt%至3wt%形式的热塑性树脂的处理液。 树脂的无皂水乳液与2重量%至30重量%的硅酸锂一起,并且优选以使热塑性树脂均匀地分散在该组合物中的方式在该组成范围内适当地制备处理液。 该膜包含所需的量。 在将硅酸钠作为碱硅酸盐并入处理液的情况下,处理液的钠含量优选为1重量%以下。 \n\n [0026] 本发明的耐腐蚀膜优选以磁体具有覆盖率为0.01g / m 2的方式形成。 磁体的每单位表面积≤或更高(膜厚度为约15nm或更大)。 如果薄膜覆盖率应低于0.01 g / m 2 恐怕该膜不能充分表现出作为耐腐蚀膜的性能。 膜的覆盖率的上限没有特别限定,但覆盖率过高,难以确保在磁铁的整个面上的均匀的密合性,有可能对与有机树脂的密合性造成不良影响。 以胶粘剂为代表。 因此,膜的覆盖率的上限优选为5.0g / m 2。 [0027] 作为适用于本发明的稀土金属基永磁体,可以提及已知的稀土金属基永磁体,例如,R-Fe-B基永磁体,R-Fe-N基永磁体,以及R-Fe-N基永磁体。 喜欢。 其中,从具有高磁性能,具有优异的批量生产性和经济优势以及与膜的粘附性方面考虑,如上所述,R-Fe-B基永磁体是优选的。 这些稀土类金属永磁体的稀土元素(R)优选为选自Nd,Pr,Dy,Ho,Tb和Sm中的至少一种,或选自La,Ce,Gd,Er,或Ld中的至少一种。  Eu,Tm,Yb,Lu和Y。 \n\n [0028] 通常,上述稀土金属中的一种足以用作R,但实际上,从容易获得等方面考虑,可以使用两种以上的混合物(稀金属,did和 喜欢)。 \n\n [0029] 此外,通过添加选自Al,Ti,V,Cr,Mn,Bi,Nb,Ta,Mo,W,Sb,Ge,Sn,Zr,Ni,Si,Zn,Hf和Ga中的至少一种,为 可能会提高矫顽力,消磁曲线的矩形性和生产率,或者降低成本。 此外,通过用Fe代替一部分Fe,可以在不损害磁特性的情况下提高所得磁体的温度特性。 \n\n [0030] 应用本发明的稀土金属基永磁体可以是烧结磁体或粘结磁体。 \n\n [0031] 此外,可以在本发明的耐腐蚀膜的表面上形成附加膜作为层压体。 通过采用这种构造,可以增强或补充耐蚀膜的特性,或者可以向膜提供附加功能。 \n\n  例 \n\n [0032] 下面通过实施例的方式更详细地描述本发明,但是应当理解,本发明不仅限于此。 \n\n 范例A: \n\n [0033] 根据例如美国专利4770723或美国专利4792368的公开,将已知的铸锭粉碎,然后依次进行压制,烧结,热处理和表面处理,从而生产出平整的 长30mm,宽20mm,高3mm,成分为14Nd-79Fe-6B-1Co(原子%)的板状烧结磁铁(以下称为块状磁铁试验片)。 通过以下工序在得到的块状磁铁试验片的表面形成耐蚀膜。 \n\n 1:处理液的制备及其储存稳定性 \n\n [0034] 将各种类型的树脂添加到各种类型的碱金属硅酸盐水溶液中,并分别使用搅拌器进行混合和搅拌,以获得表1所示的15种处理液。在表1中,树脂a为F-2000(商标)。  ),无皂水乳液型丙烯酸-苯乙烯树脂(旭化成公司的热塑性树脂); 树脂b是M6520(商标),一种添加了乳化剂的水乳液型丙烯酸-苯乙烯树脂(科莱恩聚合物公司的热塑性树脂); 树脂c为E1022(商标),添加了乳化剂的水乳液型环氧树脂(吉村油脂化学株式会社制树脂,是通过添加固化剂H-35(商标)而得到的热固性树脂。 由同一家公司提供)。 \n\n [0035] 将如此获得的处理液(pH值均在11至12的范围内)分别在40°C下保存2周,以研究其保存稳定性,结果也列于表1中(表1中的“  “中等”是指从制备时间起两周后获得了良好的分散体,“差”是指在4天内发现了组分的固体沉积,而“非常差”是指发现了组分的固体沉积。  1天之内生成)。 \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n 表格1    处理液号 碱金属硅酸盐水溶液用作碱 树脂添加 处理液的稳定性 类型1)  碱金属硅酸盐含量(wt%) 钠含量(wt%)类型2)  处理液中树脂含量(wt%) 1A100.4a0.5 公平 2A100.4a1.0 公平 3B100.2a1.5 公平 4A100.4a2.0 公平 5C100a2.0 公平 6C50a5.0 公平 7A150.6a0.5 公平 8D100.9a1.0 公平 9A10.04a10.0 公平 10A100.4b1.0 较差的 11A100.4b2.0 较差的 12A100.4b5.0 很差 13E101.9b1.0 较差的 14A10.04c10.0 较差的 15A100.4-0 公平  * 1)A:硅酸锂(n = 4.5)/硅酸钠(n = 3)= 4/1(重量比)B:硅酸锂(n = 4.5)/硅酸钠(n = 3)= 9/1(  C:硅酸锂(n = 4.5)D:硅酸锂(n = 4.5)/硅酸钠(n = 3)= 5/4(重量比)E:硅酸钠(n = 3)* 2)a  :F2000 b:M6520 c:E1022   \n\n [0036] 从表1可以清楚地看出,含有分散在碱金属硅酸盐水溶液中的树脂的无皂水乳液的处理液(1至9号)均显示出优异的储存稳定性,并且在储存两周后表现出优异的分散性。 从处理液的制备时间开始。 另一方面,包含分散于碱金属硅酸盐水溶液中的,添加有树脂的乳化剂的水性乳液的处理液(No.10〜14)均显示出较差的保存稳定性。 \n\n 2:耐蚀膜的形成及其性质 \n\n [0037] 在丙酮中通过超声清洗从大块磁体测试件的表面除去粘附的磁粉后,将测试件在制备后3小时浸入每种处理液中。 然后,分别从处理液中取出大块磁体试验片,并在200℃下加热干燥20分钟,从而在各试验片的表面上形成耐蚀膜。 通过控制空气擦拭的擦拭压力来调节膜的覆盖率。 \n\n [0038] 如此形成的耐蚀膜的特性示于表2。在表2中,通过对在表面具有耐蚀膜的块状磁铁试验片进行120次的评价,来评价耐热性和耐蚀性。 加热和冷却循环的时间,即在室温(25°C)下重复120次在室温下保持1小时,然后在大气中在170°C下保持1小时,然后进行湿度测试,包括保持所得测试 在80°C的高温高湿条件和90%相对湿度的条件下测量该块试样,以测量直到在块状磁体试样的1%的表面上产生红锈之前所花费的时间(平均值为n = 5)。 磁通量的变化是通过在具有120次加热和冷却循环以及随后的湿度测试(平均n = 5)之前和之后取变化率(退磁率)来表示的。 在其表面上的耐腐蚀膜。 通过将20mm×20mm大小的Cellotape(Nichiban Co.,Ltd。的注册商标)粘附到30mm×20mm大小的耐蚀膜表面上,并测量在其上剥离Cellotape的强度来显示粘附性。 水平方向为180度,以“((刚形成耐蚀膜后的强度)/(将耐蚀膜在室内保持2周后的强度)”)表示粘合性(平均n = 5)。 \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n 表2    处理液号薄膜覆盖率(g / m 2  膜中树脂含量(wt%) 膜中钠含量(wt%) 耐热耐蚀性(小时) 磁通量变化(%)附着力(g / 400 mm 2  评价 10.84.83.6192 380/350 例 20.89.13.5192 390/370 例 30.813.01.8216 380/370 例 40.816.73.2216 400/380 例 50.816.7 216 380/380 例 63.050.00192 380/350 例 71.53.24.0216 380/350 例 80.89.18.2192 370/350 例 90.890.00.3962350/300 比较 100.89.11.7962350/240 比较 110.816.71.6962330/250 比较 120.833.31.3722300/200 比较 130.89.117.3962330/150 比较 140.890.00.31442330/320 比较 150.803.8144 370/300 比较   \n\n [0039] 从表2清楚地了解到,由处理液形成的膜是通过将热塑性树脂以无皂的树脂水乳液形式分散在碱金属硅酸盐水溶液中而制成的,该处理液包含在膜中均匀分散的热塑性树脂。  50wt%以下的含量显示出优异的耐腐蚀性。 \n\n 范例B: \n\n [0040] 根据例如美国专利No.4770723或美国专利No.4792368的公开,将已知的铸锭粉碎,然后依次进行压制,烧结,热处理和表面加工,从而产生圆柱状烧结体。 直径为9mm,高度为3mm,组成为14Nd-79Fe-6B-1Co(原子%)的磁体(以下称为体磁体试验片)。 使用实施例A中使用的处理液4,以与实施例A中所述相同的方式在如此获得的块状磁体测试件的表面上形成耐蚀膜。 \n\n [0041] 通过在80℃和90%的高温和高湿条件下放置100小时,立即评价由此形成的耐腐蚀膜与各种粘合剂的粘合性,在形成膜之后和进行湿度测试之后。 相对湿度。 \n\n 胶粘剂1: \n\n [0042] 将样品粘附到尺寸为40mm乘50mm乘60mm的铸铁(S45C)夹具的粘附面上,该铸铁夹具按照以下方式使用具有根据JIS R6001标准的#100磨料的金刚石磨石进行抛光。  。 更具体地说,将底漆(Primer 7649:Henkel Japan K.K.的商标)施加到样品和夹具的两个粘合平面上。 干燥以除去底漆中的溶剂后,将具有厌氧性紫外线固化型胶粘剂(Loctite366:Henkel Japan KK的商标)的样品涂在粘合面上,将样品加压粘合。 在样品上施加4 kgf(39.2 N)的载荷10秒钟。 在这种情况下,将粘合剂以这样的方式施加到样品粘合平面上,使得在压力粘合期间粘合剂应从压力粘合部的周围泄漏。 通过以100mW / cm 2的强度照射365nm的紫外线来固化从压接部的周围挤出的粘合剂。 使用紫外线照射器(HLR100T-1:SEN LIGHTS CORPORATION的产品)在2分钟内,通过使样品在室温(25℃)下静置60小时来使加压部的粘接剂固化。 将以上述方式附着在夹具上的样品放置在万能试验机(株式会社岛津制作所制AUTO GRAPH AG-10TB)上,以2mm / min的剪切强度施加样品时的负荷。 从夹具上取下样品,将其除以样品粘附平面的表面积(0.64 cm 2 [0043] 除了使用改性丙烯酸酯类粘合剂(HARDLOC G55:DENKI KAGAKU KOGYO KABUSHIKI KAISHA的商标)以外,以与粘合剂1相同的方式评价粘合性。 在这种情况下,使用粘合剂2,通过将涂有粘合剂的样品安装在夹具的粘合面上,将样品粘合到夹具上,并通过在样品上施加4 kgf(39.2 N)的载荷10秒钟进行压力粘合, 通过使样品在室温(25℃)下静置60小时以使压力粘合部分中的粘合剂固化。 \n\n 胶粘剂3: \n\n [0044] 除了使用通过混合热固性环氧基粘合剂(AV138:Ciba-Geigy Corp.的商标)和硬化剂(HV998:Ciba的商标)而获得的粘合剂3以外,以与粘合剂1相同的方式评价粘合性。  -Geigy Corp.)的体积比为5:1。 在这种情况下,使用粘合剂3,通过将涂有粘合剂的样品安装在夹具的粘合面上,将样品粘合到夹具上,通过在样品上施加4 kgf(39.2 N)的载荷10秒钟进行压力粘合, 通过将样品和夹具加热到100℃30分钟以使压力粘合部分中的粘合剂固化。 \n\n [0045] 从表3清楚地理解,根据本发明形成的耐腐蚀膜即使在长期暴露于严酷条件下也保持了优异的粘附性而没有膜的劣化。 \n\n \n\n \n\n \n\n \n\n \n\n 表3    胶粘剂1 胶粘剂2 胶粘剂3  成型膜上215220380  湿度测试后210210380 *)  单位:kg / cm 2    \n\n  工业适用性  \n\n [0046] 本发明提供了一种稀土金属基永磁体,该稀土金属基永磁体在表面上具有廉价的耐蚀膜,其兼具优异的耐热性和优异的粘合性,并且提供了一种用于生产永磁体的方法。');
INSERT INTO `os_patent_instruction_text` VALUES (12967, 22796, 'METHODS FOR TREATING OCULAR NEQVASCULAR DISEASES\n\nField of the Invention\n\nThe invention relates to methods for treating ocular neovascularization using agents that inhibit VEGF.\n\nBackground of the Invention\n\nAngiogenesis, or abnormal blood vessel growth, has been implicated as an important cause of pathological states in many areas of medicine, including ophthalmology, cancer, and rheumatology. For example, the exudative or neovascular form of age-related macular degeneration (AMD) is a leading cause of blindness in the elderly. There is currently no standard and effective therapy for the treatment of exudative ADM m most patients. Thermal laser photocoagulation and photodynamic therapy (PDT) have been shown to be beneficial for subgroups of such patients. However, only a fraction of eyes meet the eligibility criteria for such therapeutic interventions and those treated have a high recurrence rate.\n\nRecent pre-clinical studies have suggested that pharmacological intervention or anti-angiogenesis therapy may be useful to treat various forms of ocular neovascularization, such as choroidal neovascularization (CNV). Much of this work has focused on blocking vascular endothelial growth factor (VEGF), which has been implicated in the pathogenesis of CNV secondary to AMD and the pathogenesis of diabetic retinopathy. VEGF is an important cytokine growth factor involved in angiogenesis and appears to play a critical role in the development of ocular neovascularization. Human studies have shown that high concentrations of VEGF are present in the vitreous in angiogenic retinal disorders but not in inactive or non-neovascularization disease states. Excised,human CNV\n\nafter experimental submacular surgery have also shown high VEGF levels. Other studies have shown regression or prevention of neovascularization in multiple vascular beds in several animal models, using various types of anti-VEGF agents, including antibody fragments. Thus, anti-VEGF therapy is a promising new treatment for AMD, diabetic retinopathy, and related disorders.\n\nIn addition to a potential anti-angiogenic effect, anti-VEGF therapy may be useful as an anti-permeability agent. VEGF was initially referred to as vascular permeability factor due to its potent ability to induce leakage from blood vessels. Recent research has shown that VEGF may be important in causing vessel leakage in diabetic retinopathy and that the diabetes-induced blood-retinal barrier breakdown can be dose-dependently inhibited with anti-VEGF therapy. Anti-VEGF therapy may, therefore, represent a two-prong attack on CNV via its anti-angiogenic and anti-permeability properties.\n\nExisting methods for treating ocular neovascular disease are in need of improvement in their ability to inhibit or eliminate various forms of neovascularization, including choroidal neovascularization secondary to AMD and diabetic retinopathy. Furthermore, there is a continuing and significant need to identify new therapies to treat ocular neovascularization. The present invention fulfills these needs and further provides other related advantages.\n\nSummary of the Invention\n\nWe have conducted clinical trials of an anti-VEGF aptamer with and without photodynamic therapy in patients with subfoveal choroidal neovascularization secondary to age-related macular degeneration to determine the safety profile of multiple injection therapy. We found that anti-VEGF therapy with or without photodynamic therapy (PDT) was both safe and effective in treating patients suffering from AMD and related disorders. Most patients receiving the anti-VEGF aptamer exhibited stable or improved vision three months after treatment. Those receiving anti-VEGF therapy in combination with PDT exhibited the most dramatic improvement in vision. Thus, anti-VEGF therapy, either alone or in conjunction with angiogenic therapies, is clearly a \n\npromising treatment for various forms of ocular neovascularization, including AMD and diabetic retinopathy.\n\nAccordingly, the present invention features a method for treating a patient suffering from an ocular neovascular disease, which method includes the following steps: (a) administering to the patient an effective amount of an anti-VEGFaptamer; and (b) providing the patient with phototherapy, such as photodynamic therapy or thermal laser photocoagulation.\n\nIn one embodiment of the invention, the photodynamic therapy (PDT) includes the steps of: (i) delivering a photosensitizer to the eye tissue of a patient; and (ii) exposing the photosensitizer to light having a wavelength absorbed by the photosensitizer for a time and at an intensity sufficient to inhibit neovascularization in the patient’s eye tissue. A variety of photosensitizers may be used, including but not limited to, benzoporphyrin derivatives (BPD), monoaspartyl chlorin e6, zinc phthalocyanine, tin etiopurpurin, tetrahydroxy tetraphcnylporphyrin, and porfimer sodium (PHOTOFRIN®), and green porphyrins.\n\nIn a related aspect, the present invention provides a method for treating an ocular neovascular disease in a patient, which method involves administering to the patient: (a) an effective amount of an anti-VEGF aptamer; and (b) a second compound capable of diminishing or preventing the development of unwanted neovasculature. The anti-VEGF agents or other compounds that may be combined with anti-VEGF aptamers include, but are not limited to: antibodies or antibody fragments specific to VEGF; antibodies specific to VEGF receptors; compounds that inhibit, regulate, and/or modulate tyrosine kinase signal transduction; VEGF polypepides; oligonucleotides that inhibit VEGF expression at the nucleic acid level, for example antisense RNAs; retinoids; growth factorcontaining compositions; antibodies that bind to collagens; and various organic compounds and other agents with angiogenesis inhibiting activity.\n\nIn a preferred embodiment of the invention, the anti-VEGF agent is a nucleic acid ligand to vascular endothelial growth factor (VEGF). The VEGF nucleic acid ligand may include ribonucleic acid, deoxyribonucleic acid, and/or \n\nmodified nucleotides. In particularly preferred embodiments, the VEGF nucleic acid ligand includes 2’F-modificd nucleotides, 2’-O-methyl (2’-OMe) modified nucleotides, and/or a polyalkylene glycol, such as polyethylene glycol (PEG). In some embodiments, the VEGF nucleic acid ligand is modified with a moiety, for example a phosphorothioate, that decreases the activity of endonucleases or exonucleases on the nucleic acid ligand relative to the unmodified nucleic acid ligand, without adversely affecting the binding affinity of the ligand.\n\nIn yet another aspect, the invention provides a method for treating an ocular neovascular disease in a patient, which method involves the steps of: (a) administering to the patient an effective amount of an agent that inhibits the development of ocular neovascularization, for example, an anti-VEGFaptamer; and (b) providing the patient with a therapy that destroys abnormal blood vessels in the eye, for example PDT.\n\nThe anti-VEGF aptamer may be administer intraocullary by injection into the eye. Alternatively, the aptamer may be delivered using an intraocular implant.\n\nThe methods of the invention can be used to treat a variety of neovascular diseases, including but not limited to, ischemic retinopathy, intraocular neovascularization, age-related macular degeneration, comeal neovascularization, retinal neovascularization, choroidal neovascularization, diabetic macular edema, diabetic retina ischemia, diabetic retinal edema, and proliferative diabetic retinopathy.\n\nOther advantages and features of the present invention will be apparent from the following detailed description thereof and from the claims.\n\nDefinitions\n\nBy “ocular neovascular disease” is meant a disease characterized by ocular neovascularization, i.e. the development of abnormal blood vessels in the eye of a patient.\n\nBy “patient” is meant any animal having ocular tissue that may be subject to neovascularization. Preferably, the animal is a mammal, which includes, but is not limited to, humans and other primates. The term also includes domesticated animals, such as cows, hogs, sheep, horses, dogs, and cats.\n\nBy “phototherapy” is meant any process or procedure in which a patient is exposed to a specific dose of light of a particular wavelength, including laser light, in order to treat a disease or other medical condition.\n\nBy “photodynamic therapy” or “PDT” is meant any form of phototherapy that uses a light-activated drug or compound, referred to herein as a photosensitizer, to treat a disease or other medical condition characterized by rapidly growing tissue, including the formation of abnormal blood vessels (i.e., angiogenesis). Typically, PDT is a two-step process that involves local or systemic administration of the photosensitizer to a patient followed by activation of the photosensitizer by irradiation with a specific dose of light of a particular wavelength.\n\nBy “anti-VEGF agent” is meant a compound that inhibits the activity or production of vascular endothelial growth factor (“VEGF”).\n\nBy “photosensitizer” or “photoactive agent” is meant a light-absorbing drug or other compound that upon exposure to light of a particular wavelength becomes activated thereby promoting a desired physiological event, e.g., the impairment or destruction of unwanted cells or tissue.\n\nBy “thermal laser photocoagulation” is meant a form of photo-therapy in which laser light rays are directed into the eye of a patient in order to cauterize abnormal blood vessels in the eye to seal them from further leakage.\n\nBy “effective amount” is meant an amount sufficient to treat a symptom of an ocular neovascular disease.\n\nThe term “light” as used herein includes all wavelengths of electromagnetic radiation, including visible light. Preferably, the radiation wavelength is selected to match the wavelength(s) that excite(s) the photosensitizer. Even more preferably, the radiation wavelength matches the \n\nexcitation wavelength of the photosensitizer and has low absorption by non-target tissues.\n\nBrief Description of the Drawing\n\nFIGURE 1 is the chemical structure of the anti-VEGF agent NX1838.\n\nDetailed Description\n\nVEGF (Vascular Endothelial Growth Factor) is an important stimulus for the growth of new blood vessels in the eye. We have discovered that anti-VEGF therapy provides a safe and effective treatment for neovascular disease, especially when combined with a secondary therapy that is able to reduce or eliminate ocular neovascularization, such as, for example, photodynamic therapy (PDT). We found that the combination of these therapies is far superior at treating conditions characterized by the development of unwanted neovasculature in the eye than most conventional treatments, including the use of either of these therapies alone.\n\nAccordingly, the present invention provides a method of treating an ocular neovascular disease which involves administering to a patient an anti-VEGF agent and treating the patient with phototherapy (e.g., PDT) or with other therapies, such as photocoagulation, that destroy abnormal blood vessels in the eye. This method can be used to treat a number of ophthamalogical diseases and disorders marked by the development of ocular neovascularization, including but not limited to, ischemic retinopathy, intraocular neovascularization, age-related macular degeneration, corneal neovascularization, retinal neovascularization, choroidal neovascularization, diabetic macular edema, diabetic retina ischemia, diabetic retinal edema, and proliferative diabetic retinopathy.\n\nAnti-VEGF Therapy\n\nA variety of anti-VEGF therapies that inhibit the activity or production of VEGF, including aptamers and VEGF antibodies, are available and can be \n\nused in the methods of the present invention. The preferred anti-VEGF agents are nucleic acid ligands of VEGF, such as those described in U.S. Patent Nos. 6,168,778 Bl; 6,147,204; 6,051,698; 6,011,020; 5,958,691; 5,817,785; 5,811,533; 5,696,249; 5, 683,867; 5,670,637; and 5,475,096. A particularly preferred anti-VEGF agent is EYE001 (previously referred to as NX1838), which is a modified, pegylated aptamer that binds with high affinity to the major soluble human VEGF isoform and has the general structure shown in FIGURE 1 (described in U.S. Patent No. 6,168,788; Journal of Biological Chemistry, Vol. 273(32): 20556-20567 (1998); and In Vitro Cell Dev. Biol.-Animal Vol. 35:533-542 (1999)).\n\nAlternatively, the anti-VEGF agents may be, for example, VEGF antibodies or antibody fragments, such as those described in U.S. Patent Nos. 6,100,071; 5,730,977; and WO 98/45331. Other suitable anti-VEGF agents or compounds that may be used in combination with anti-VEGF agents according to the present invention include, but are not limited to, antibodies specific to VEGF receptors (e.g., U.S. Patent Nos. 5,955,311; 5,874,542; and 5,840,301); compounds that inhibit, regulate, and/or modulate tyrosine kinase signal transduction (e.g., U.S. Patent No. 6,313,138 Bl); VEGF polypepides (e.g., U.S. Patent No. 6,270,933 Bl and WO 99/47677); oligonucleotides that inhibit VEGF expression at the nucleic acid level, for example antisense RNAs (e.g., U.S. Patent Nos. 5,710,136; 5,661,135; 5,641,756; 5,639,872; and 5,639,736); retinoids (e.g., U.S. Patent No. 6,001,885); growth factor-containing compositions (e.g., U.S. Patent No. 5,919,459); antibodies that bind to collagens (e.g., WO 00/40597); and various organic compounds and other agents with angiogenesis inhibiting activity (U.S. Patent Nos. 6,297,238 Bl; 6,258,812 Bl; and 6,114,320).\n\nAdministration of Anti-VEGFAgents\n\nOnce a patient has been diagnosed with a neovascular disorder of the eye, the patient is treated by administration of an anti-VEGF agent in order to block the negative effects of VEGF, thereby alleviating the symptoms associated with the neovascularization. As discussed above, a wide variety of anti-VEGF agents \n\nare known in the art and may be used in the present invention. Methods for preparing these anti-VEGF agents are also well-known and many are commercially available medications.\n\nThe anti-VEGF agents can be administered systemically, e.g. orally.or by IM or IV injection, in admixture with a pharmaceutically acceptable carrier adapted for the route of administration. A variety of physiologically acceptable carriers can be used to administer the anti-VEGF agents and their formulations are known to those skilled in the art and are described, for example, in Remington’s Pharmaceutical Sciences, (18th edition), ed. A. Gennaro, 1990, Mack Publishing Company, Easton, PA and Pollock et al.\n\nThe anti-VEGF agents are preferably administered parenterally (e.g., by intramuscular, intraperitoneal, intravenous, intraocular, intravitreal,-or subcutaneous injection or implant). Formulations for parenteral administration include sterile aqueous or non-aqueous solutions, suspensions, or emulsions. A variety of aqueous carriers can be used, e.g., water, buffered water, saline, and the like. Examples of other suitable vehicles include polypropylene glycol, polyethylene glycol, vegetable oils, gelatin, hydrogenated naphalenes, and injectable organic esters, such as ethyl oleate. Such formulations may also contain auxiliary substances, such as preserving, wetting, buffering, emulsifying, and/or dispersing agents. Biocompatible, biodegradable lactide polymer, lactide/glycolide copolymer, or polyoxyethylene-polyoxypropylene copolymers may be used to control the release of the active ingredients.\n\nAlternatively, the anti-VEGF agents can be administered by oral ingestion. Compositions intended for oral use can be prepared in solid or liquid forms, according to any method known to the art for the manufacture of pharmaceutical compositions. The compositions may optionally contain sweetening, flavoring, coloring, perfuming, and preserving agents in order to provide a more palatable preparation.\n\nSolid dosage forms for oral administration include capsules, tablets, pills, powders, and granules. Generally, these pharmaceutical preparations contain active ingredient admixed with non-toxic pharmaceutically acceptable excipients. \n\nThese may include, for example, inert diluents, such as calcium carbonate, sodium carbonate, lactose, sucrose, glucose, mannitol, cellulose, starch, calcium phosphate, sodium phosphate, kaolin and the like. Binding agents, buffering agents, and/or lubricating agents (e.g., magnesium stearate) may also be used. Tablets and pills can additionally be prepared with enteric coatings.\n\nLiquid dosage forms for oral administration include pharmaceutically acceptable emulsions, solutions, suspensions, syrups, and soft gelatin capsules. These forms contain inert diluents commonly used in the art, such as water or an oil medium, and can also include adjuvants, such as wetting agents, emulsifying agents, and suspending agents.\n\nThe anti-VEGF agents can also be administered topically, for example, by patch or by direct application to the eye, or by iontophoresis.\n\nThe anti-VEGF agents may be provided in sustained release compositions, such as those described in, for example, U.S. Patent Nos. 5,672,659 and 5,595,760. The use of immediate or sustained release compositions depends on the nature of the condition being treated. If the condition consists of an acute or over-acute disorder, treatment with an immediate release form will be preferred over a prolonged release composition. Alternatively, for certain preventative or long-term treatments, a sustained released composition may be appropriate.\n\nThe anti-VEGF agent may also be delivered using an intraocular implant. Such implants may be biodegradable and/or biocompatible implants, or may be non-biodegradable implants. The implants may be permeable or impermeable to the active agent, and may be inserted into a chamber of the eye, such as the anterior or posterior chambers or may be implanted in the schelra, transchoroidal space, or an avascularized region exterior to the vitreous. In a preferred embodiment, the implant may be positioned over an avascular region, such as on the sclera, so as to allow for transcleral diffusion of the drug to the desired site of treatment, e.g. the intraocular space and macula of the eye. Furthermore, the site of transcleral diffusion is preferably in proximity to the macula.\n\nExamples of implants for delivery of an anti-VEGF agent include, but are not limited to, the devices described in U.S. Patent Nos. 3,416,530; 3,828,777; 4,014,335; 4,300,557; 4,327,725; 4,853,224; 4,946,450; 4,997,652; 5,147,647; 5,164,188; 5,178,635; 5,300,114; 5,322,691; 5,403,901; 5,443,505; 5,466,466; 5,476,511; 5,516,522; 5,632,984; 5,679,666; 5,710,165; 5,725,493; 5,743,274; 5,766,242; 5,766,619; 5,770,592; 5773,019; 5,824,072; 5,824,073; 5,830,173; 5,836,935; 5,869,079, 5,902,598; 5,904,144; 5,916,584; 6,001,386; 6,074,661; 6,110,485; 6,126,687; 6,146,366; 6,251,090; and 6,299,895, and in WO 01/30323 and WO 01/28474, all of which are incorporated herein by reference.\n\nDosage\n\nThe amount of active ingredient that is combined with the carrier materials to produce a single dosage will vary depending upon the subject being treated and the particular mode of administration. Generally, the anti-VEGF agent should be administered in an amount sufficient to reduce or eliminate a symptom of an ocular neovascular disease.\n\nDosage levels on the order of about 1 pg/kg to 100 mg/kg of body weight per administration are useful in the treatment of the above mentioned neovascular disorders. When administered directly to the eye, the preferred dosage range is about 0.3 mg to about 3 mg per eye. The dosage may be administered as a single dose or divided into multiple doses. In general, the desired dosage should be administered at set intervals for a prolonged period, usually at least over several weeks, although longer periods of administration of several months or more may be needed.\n\nOne skilled in the art will appreciate that the exact individual dosages may be adjusted somewhat depending on a variety of factors, including the specific anti-VEGF agent being administered, the time of administration, the route of administration, the nature of the formulation, the rate of excretion, the particular disorder being treated, the severity of the disorder, and the age, weight, health, and gender of the patient. Wide variations in the needed dosage are to be expected in view of the differing efficiencies of the various routes of administration. For instance, oral administration generally would be expected to\n\nrequire higher dosage levels than administration by intravenous or intravitreal injection. Variations in these dosage levels can be adjusted using standard empirical routines for optimization, which are well-known in the art. The precise therapeutically effective dosage levels and patterns are preferably determined by 5 the attending physician in consideration of the above identified factors.\n\nIn addition to treating pre-existing neovascular diseases, anti-VEGF agents can be administered prophylactically in order to prevent or slow the onset of these disorders. In prophylactic applications, an anti-VEGF agent is administered to a patient susceptible to or otherwise at risk of a particular neovascular disorder. 10 Again, the precise amounts that are administered depend on various factors such as the patient\'s state of health, weight, etc.\n\nEffectiveness of Anti-VEGF Therapy\n\nIn order to assess the effectiveness of anti-VEGF therapy to treat ocular neovascularization, we conducted a number of studies, which are described in the 15 examples below, that involved the administration of an anti-VEGF aptamer with and without photodynamic therapy in patients suffering from subfoveal choroidal neovascularization secondary to age-related macular degeneration. A Phase 1A single intravitreal injection study of anti-VEGF therapy for patients with subfoveal choroidal neovascularization (CNV) secondary to age-related macular 20 degeneration (AMD) revealed an excellent safety profile (Example 6). Ophthalmic evaluation revealed that 80% of patients showed stable or improved vision 3 months after treatment and that 27% of eyes demonstrated a 3-line or greater improvement in vision on the ETDRS chart at this time period. No significant related adverse events were reported locally or systemically. These 25 data demonstrated that anti-VEGF therapy is a promising new avenue for the treatment of neovascular diseases of the eye, including exudative macular degeneration and diabetic retinopathy.\n\nWe also performed a Phase IB multiple descending dose safety study of anti-VEGF therapy using multiple intravitreal injections of the anti-VEGF\n\n30 aptamer with or without photodynamic therapy in patients with subfoveal CNV secondary to AMD (Example 7). The safety study showed no significant safety \n\nissues related to the drug. Ophthalmic evaluation revealed that 87.5% of patients that received the anti-VEGF aptamer alone showed stable or improved vision 3 months after treatment and that 25% of eyes demonstrated a 3-line or greater improvement in vision on the ETDRS chart at this time period. A 60% 3-line gain at 3 months was noted in patients that received both the anti-VEGF aptamer and photodynamic therapy. Multiple intravitreal injections of the anti-VEGF aptamer were very well tolerated in this Phase IB study.\n\nThe results of this Phase IB multiple intravitreal injection clinical study of anti-VEGF therapy (Example 7) expand the excellent safety profile reported by our Phase 1A single-injection study (Example 6). Specifically, the Phase IB study shows the intraocular and systemic safety of three consecutive anti-VEGF aptamer intravitreal injections given monthly. No serious related adverse events were noted. The adverse events encountered appeared to be unrelated or minor events in some cases probably due to the intravitreal injection itself.\n\nThe 3-line gain observed in 25% of the aptamer only treated group at 3 months compares favorably to historical controls such as the results of the pivotal trial of PDT (2.2%) and its controls (1.4%) at 3 months (Arch Ophthalmol 1999, 117:1329-1345) and a sham radiation control group (3%) (Ophthalmology 1999, 106;12:2239-2247) where no more than 3% of patients showed such an improvement at this same time period.\n\nThe 25% 3-line gain at 3 months is consistent with the 26.7% improvement rate noted in the Phase 1A study of the aptamer. It may be that the anti-permeability effects of the drug caused resorption of subretinal fluid and, thus improved vision in these cases. Interestingly, a recent study using an anti-VEGF antibody fragment from Genentech also showed a 26% 3-line gain rate in a Phase 1 clinical trial. This antibody fragment shares the same mechanism of blocking extracellular VEGF as the anti-VEGF aptamer.\n\nThe stabilization or improvement rate of 87.5% observed at 3 months in the Phase IB study also compares favorably with the 50.5% rate for the PDT-treated patients in that pivotal trial (Arch Ophthalmol 1999, 117:1329-1345), the \n\n44% rate in the PDT controls, and 48% rate in the sham radiation control group (Ophthalmology 1999, 106; 12:2239-2247).\n\nThe 60% 3-line gain at 3 months in the patients that received both the anti-VEGF aptamer and PDT was also very encouraging. In the pivotal Phase 3 PDT trial only 2.2% of patients showed such visual improvement (Arch Ophthalmol 1999, 117:1329-1345). Both of these study groups included eyes with classic subfoveal CNV. The improvement in vision observed in these eyes is supported by the finding that the investigators choose to re-treat with PDT at 3 months in only 40% of cases compared to the 93% re-treatment rate reported in the pivotal PDT trial (Arch Ophthalmol 1999, 117:1329-1345).\n\nIn addition, numerous pre-clinical studies now show that anti-VEGF therapy can prevent VEGF-induced neovascularization of the cornea, iris, retina, and choroid (Arch Ophthalmol 1996, 114:66-7; Invest Ophthalmol Vis Sci 1994, 35:101). The pre-clinical studies described below in Examples 1-5 with EYE001 provide evidence that anti-VEGF therapy may be useful in decreasing vascular permeability and ocular neovascularization. The anti-VEGF aptamer showed great efficacy in the ROP retinal neovascularization model where 80% of retinal neovascularization was inhibited compared to controls (p = 0.0001). The Miles assay model showed almost complete attenuation of VEGF mediated vascular leakage following addition of EYE001 and the corneal angiogenesis model also showed a significant reduction in neovascularization with EYE001. The Miles Assay study in guinea pigs suggests that the anti-VEGF aptamer can significantly decrease vascular permeability. This property of decreasing vascular permeability may prove to be clinically important for decreasing fluid and edema in CNV and diabetic macular edema. Thus, anti-VEGF therapy may act both as an anti-permeability and/or anti-angiogenic agent.\n\nPhotodynamic Therapy (PDT)\n\nAs discussed above, one embodiment of the method of the invention involves administering an anti-VEGF agent in combination with photodynamic therapy (PDT). PDT is a two-step process that starts with the local or systemic \n\nadministration of a light-absorbing photosensitive agent, such as a porphyrin derivative, that accumulates selectively in target tissues of the patient. Upon irradiation with light of an activating wavelength, reactive oxygen species are produced in cells containing the photosensitizer, which promote cell death. For example, in the treatment of eye diseases characterized by ocular neovascularization, a photosensitizer is selected that accumulates in the neovasculature of the eye. The patient’s eye is then exposed to light of an appropriate wavelength, which results in the destruction of the abnormal blood vessels, thereby improving the patient’s visual acuity.\n\nPhotosensitizers\n\nThe photodynamic therapy according to the invention can be performed using any of a number of photoactive compounds. For example, the photosensitizer can be any chemical compound that collects in one or more types of selected target tissues and, when exposed to light of a particular wavelength, absorbs the light and induces impairment or destruction of the target tissues. Virtually any chemical compound that homes to a selected target and absorbs light may be used in this invention. Preferably, the photo sensitizer is nontoxic to the animal to which it is administered and is capable of being formulated in a nontoxic composition. The photosensitizer is also preferably nontoxic in its photodegraded form. Ideal photosensitizers are characterized by a lack of toxicity to cells in the absence of the photochemical effect and are readily cleared from non-target tissues.\n\nA comprehensive listing of photosensitizers may be found, for example, in Kreimer-Bimbaum, Sem. Hematol. 26:157-73, 1989. Photosensitive compounds include, but are not limited to, chlorins, bacteriochlorins, phthalocyanines, porphyrins, purpurins, merocyanines, pheophorbides, psoralens, aminolevulinic acid (ALA), hematoporphyrin derivatives, porphycenes, porphacyanine, expanded porphyrin-like compounds and pro-drugs such as 8-aminolevulinic acid, which can produce drugs such as protoporphyrin. (See, e.g., photosenitizers described in any ofU.S. Pat. Nos. 5,438,071; 5,405,957; 5,198,460; 5,190,966; 5,173,504; 5,171,741; 5,166,197; 5,095,030; 5,093,349; 5,079,262; 5,028,621;\n\n5,002,962; 4,968,715; 4,920,143; 4,883,790; 4,866,168; and 4,649,151.) Preferred photosensitizing agents are benzoporphyrin derivatives (BPD), monoaspartyl chlorin e6, zinc phthalocyanine, tin etiopurpurin, tetrahydroxy tetraphenylporphyrin, and porfimcr sodium (PHOTOFRIN®). A particularly potent group of photosensitizers includes green porphyrins, which are described in detail in Levy el al., U.S. Pat. No. 5,171,749.\n\nAny of the photosensitizers described above can be used in the methods of the invention. Of course, mixtures of two or more photoactive compounds can also be used; however, the effectiveness of the treatment depends on the absorption of light by the photosensitizer so that if mixtures are used, components with similar absorption maxima are preferred.\n\nThe photosensitizing agents of the present invention preferably have an absorption spectrum that is within the range of wavelengths between 350 nm and 1200 nm, preferably between about 400 and 900 nm and, most preferably, between 600 and 800 nm.\n\nThe photosensitizer is formulated so as to provide an effective concentration to the target ocular tissue. The photosensitizer may be coupled to a specific binding ligand which may bind to a specific surface component of the target ocular tissue or, if desired, by formulation with a carrier that delivers higher concentrations to the target tissue. The nature of the formulation will depend in part on the mode of administration and on the nature of the photosensitizer selected. Any pharmaceutically acceptable excipient, or combination thereof, appropriate to the particular photoactive compound may be used. Thus, the photosensitizer may be administered as an aqueous composition, as a transmucosal or transdermal composition, or in an oral formulation.\n\nAs previously mentioned, the method of the invention is particularly effective to treat patients suffering from loss of visual acuity associated with unwanted neovasculature. Increased numbers of LDL receptors have been shown to be associated with neovascularization. Green porphyrins, and in particular BPD-MA, strongly interact with such lipoproteins. LDL itself can be used as a carrier for green porphyrins, or liposomal formulations may be used. Liposomal \n\nformulations are believed to deliver green porphyrins selectively to the low-density lipoprotein component of plasma which, in turn acts as a carrier to deliver the active ingredient more effectively to the desired site. By increasing the partitioning of the green porphyrin into the lipoprotein phase of the blood, liposomal formulations can result in a more efficient delivery of the photosensitizer to neovasculature. Compositions of green porphyrins involving lipocomplexes, including liposomes, are described in U.S. Pat. No. 5,214,036. Liposomal BPD-MA for intravenous a', '治疗眼部神经血管疾病的方法\n\n发明领域\n\n本发明涉及使用抑制VEGF的药物治疗眼新血管形成的方法。\n\n发明背景\n\n在许多医学领域,包括眼科,癌症和风湿病学中,血管生成或异常的血管生长被认为是病理状态的重要原因。例如,年龄相关性黄斑变性(AMD)的渗出性或新生血管形式是老年人失明的主要原因。目前,对于大多数患者,目前尚无用于治疗渗出性ADM的标准有效疗法。热激光光凝和光动力疗法(PDT)已被证明对此类患者的亚组有益。但是,只有一小部分眼睛符合此类治疗干预的资格标准,而被治疗者的复发率很高。\n\n最近的临床前研究表明,药理干预或抗血管生成治疗可能对治疗各种形式的眼新血管形成(例如脉络膜新血管形成(CNV))有用。这项工作的大部分集中在阻断血管内皮生长因子(VEGF)上,该因子与AMD继发的CNV的发病机制和糖尿病性视网膜病变的发病机制有关。 VEGF是参与血管生成的重要细胞因子生长因子,并且似乎在眼新血管形成的发展中起关键作用。人体研究表明,在血管生成性视网膜疾病的玻璃体中存在高浓度的VEGF,但在非活动性或非血管新生性疾病中则不存在。人工人类CNV\n\n经过实验性黄斑部手术后,也显示出高的VEGF水平。其他研究表明,在多种动物模型中,使用多种类型的抗VEGF试剂(包括抗体片段)可以消退或预防多血管床中的新血管形成。因此,抗VEGF疗法是用于AMD,糖尿病性视网膜病和相关疾病的有希望的新疗法。\n\n除了潜在的抗血管生成作用外,抗VEGF疗法还可以用作抗渗透剂。 VEGF由于其诱导血管渗漏的有效能力而最初被称为血管通透性因子。最近的研究表明,VEGF可能在引起糖尿病性视网膜病变中引起血管渗漏方面很重要,并且抗VEGF治疗可以剂量依赖性地抑制糖尿病引起的血视网膜屏障破坏。因此,抗VEGF疗法通过其抗血管生成和抗渗透性特性,可以代表对CNV的两管齐下的攻击。\n\n现有的治疗眼新血管疾病的方法需要改善其抑制或消除各种形式的新血管形成的能力,包括继发于AMD和糖尿病性视网膜病的脉络膜新血管形成。此外,对识别眼新血管形成的新疗法存在持续的重大需求。本发明满足了这些需求,并进一步提供了其他相关优点。\n\n发明内容\n\n我们进行了抗-VEGF适体在有或无光动力治疗的继发于年龄相关性黄斑变性的黄斑下脉络膜新生血管形成患者的临床试验,以确定多次注射治疗的安全性。我们发现,有或没有光动力疗法(PDT)的抗VEGF治疗在治疗患有AMD和相关疾病的患者中既安全又有效。治疗后三个月,大多数接受抗VEGF适体的患者视力稳定或改善。那些接受抗VEGF疗法联合PDT治疗的患者的视力改善最为显着。因此,单独或与血管生成疗法联合使用的抗VEGF治疗显然是一种\n\n有前景的各种眼新血管形成治疗方法,包括AMD和糖尿病性视网膜病。\n\n因此,本发明的特征在于一种用于治疗患有眼新血管疾病的患者的方法,该方法包括以下步骤:(a)向该患者给药有效量的抗-VEGFaptamer; (b)为患者提供光疗,例如光动力疗法或热激光光凝。\n\n在本发明的一个实施方案中,光动力疗法(PDT)包括以下步骤:(i)将光敏剂递送至患者的眼组织; (ii)将光敏剂暴露在一定波长下,其光强足以抑制患者眼组织中的新血管形成,该光应被光敏剂吸收一段时间。可以使用多种光敏剂,包括但不限于苯并卟啉衍生物(BPD),单天冬氨酰二氢卟酚e6,酞菁锌,依托紫嘌呤锡,四羟基四苯甲基卟啉和卟啉钠(PHOTOFRIN®)和绿色卟啉。\n\n在相关方面,本发明提供了一种用于治疗患者的眼新血管疾病的方法,该方法包括向患者施用:(a)有效量的抗VEGF适体; (b)能够减少或防止有害新脉管系统发展的第二种化合物。可以与抗VEGF适体组合的抗VEGF剂或其他化合物包括但不限于:VEGF特异性的抗体或抗体片段;和VEGF受体特异性抗体;抑制,调节和/或调节酪氨酸激酶信号转导的化合物; VEGF多肽;在核酸水平上抑制VEGF表达的寡核苷酸,例如反义RNA;类维生素A;含有生长因子的组合物;结合胶原的抗体;以及各种具有血管生成抑制活性的有机化合物和其他药物。\n\n在本发明的一个优选实施方案中,抗VEGF剂是血管内皮生长因子(VEGF)的核酸配体。 VEGF核酸配体可以包括核糖核酸,脱氧核糖核酸和/或\n\n修饰的核苷酸。在特别优选的实施方案中,VEGF核酸配体包括2′F-修饰的核苷酸,2′-O-甲基(2′-OMe)修饰的核苷酸和/或聚亚烷基二醇,例如聚乙二醇(PEG)。在一些实施方案中,用例如硫代磷酸酯部分修饰VEGF核酸配体,其相对于未修饰的核酸配体降低核酸配体上的核酸内切酶或核酸外切酶的活性,而不会不利地影响配体的结合亲和力。\n\n在另一方面,本发明提供了一种用于治疗患者的眼新血管疾病的方法,该方法包括以下步骤:(a)向患者施用有效量的例如抑制眼新血管形成发展的药物。 ,一种抗VEGF适体; (b)向患者提供破坏眼睛异常血管的疗法,例如PDT。\n\n抗VEGF适体可以通过注射入眼内而被施用到鼻腔内。或者,可以使用眼内植入物来递送适体。\n\n本发明的方法可以用于治疗多种新血管疾病,包括但不限于缺血性视网膜病,眼内新血管形成,年龄相关性黄斑变性,喜来新血管形成,视网膜新血管形成,脉络膜新血管形成,糖尿病性黄斑水肿,糖尿病性视网膜缺血,糖尿病性视网膜水肿和增生性糖尿病视网膜病变。\n\n通过下面的详细描述和权利要求,本发明的其他优点和特征将变得显而易见。\n\n定义\n\n“眼新血管疾病”是指以眼新血管形成为特征的疾病,即患者眼睛中异常血管的发展。\n\n“患者”是指具有眼组织的任何动物,其可能经受新血管形成。优选地,动物是哺乳动物,其包括但不限于人和其他灵长类动物。该术语还包括驯养的动物,例如牛,猪,绵羊,马,狗和猫。\n\n“光疗”是指将患者暴露于特定剂量的特定波长的特定波长的光(包括激光)中以治疗疾病或其他医学状况的任何过程或程序。\n\n“光动力疗法”或“ PDT”是指使用光活化药物或化合物(在本文中称为光敏剂)治疗以组织迅速生长为特征的疾病或其他医学病症的任何形式的光疗,包括异常血管(即血管生成)。通常,PDT是一个两步过程,涉及向患者局部或全身施用光敏剂,然后通过用特定剂量的特定波长的光照射来激活光敏剂。\n\n“抗VEGF剂”是指抑制血管内皮生长因子(“ VEGF”)的活性或产生的化合物。\n\n“光敏剂”或“光活性剂”是指吸光药物或其他化合物,其在暴露于特定波长的光时被活化从而促进所需的生理事件,例如有害细胞或组织的损伤或破坏。\n\n“热激光光凝”是指光疗的一种形式,其中将激光射线引导到患者的眼睛中以烧灼眼睛中的异常血管以密封它们以防止进一步的泄漏。\n\n“有效量”是指足以治疗眼新血管疾病的症状的量。\n\n如本文所用,术语“光”包括电磁辐射的所有波长,包括可见光。优选地,选择辐射波长以匹配激发光敏剂的波长。甚至更优选地,辐射波长匹配于\n\n光敏剂的激发波长,被非目标组织吸收低。\n\n附图说明\n\n图1是抗VEGF剂NX1838的化学结构。\n\n详细说明\n\nVEGF(血管内皮生长因子)是对眼睛中新血管生长的重要刺激。我们已经发现抗VEGF疗法为新血管疾病提供了一种安全有效的疗法,特别是当与能够减少或消除眼部新血管形成的二次疗法相结合时,例如光动力疗法(PDT)。我们发现,与大多数常规治疗方法(包括单独使用这两种治疗方法)相比,这些治疗方法的组合在以眼睛有害的新脉管系统发展为特征的治疗条件下要优越得多。\n\n因此,本发明提供了一种治疗眼部新血管疾病的方法,该方法包括向患者施用抗VEGF剂,并用光疗法(例如,PDT)或其他疗法(例如光凝)破坏患者的异常血管,以治疗该患者。在眼里。该方法可用于治疗以眼新血管形成发展为特征的许多眼科疾病和病症,包括但不限于缺血性视网膜病,眼内新血管形成,年龄相关性黄斑变性,角膜新生血管,视网膜新生血管,脉络膜新生血管,糖尿病黄斑水肿,糖尿病性视网膜缺血,糖尿病性视网膜水肿和增生性糖尿病视网膜病变。\n\n抗VEGF疗法\n\n有多种抑制VEGF活性或产生的抗VEGF疗法,包括适体和VEGF抗体。\n\n用于本发明的方法中。优选的抗VEGF剂是VEGF的核酸配体,例如在美国专利号6,168,778 B1;和美国专利No.6,168,778 B1中所述的那些。 6,147,204; 6,051,698; 6,011,020; 5,958,691; 5,817,785; 5,811,533; 5,696,249; 5、683,867; 5,670,637;和5,475,096。一种特别优选的抗VEGF剂是EYE001(以前称为NX1838),它是一种修饰的聚乙二醇化适体,与主要可溶性人VEGF同工型具有高亲和力结合,并具有图1所示的一般结构(美国专利中所述)美国专利号6,168,788;《生物化学杂志》,第273卷(32):20556-20567(1998);和《体外细胞发育生物学动物》,第35卷:533-542(1999))。\n\n或者,抗VEGF剂可以是,例如,VEGF抗体或抗体片段,例如在美国专利号6,100,071; 5,100,071; 5,200,077; 5,200,000; 5,200,000、5,200,000、5,200,000、5,200,000、5,200,000、5,200,000、5,200,000、5,300,000、6,300,000、6,300,000、6,300,000、6,300,000、6,300,000、6,400、6、0中描述的那些。 5,730,977;和WO 98/45331。根据本发明的其他合适的抗VEGF剂或可与抗VEGF剂组合使用的化合物包括但不限于对VEGF受体具有特异性的抗体(例如,美国专利号5,955,311; 5,874,542;和5,840,301 );抑制,调节和/或调节酪氨酸激酶信号转导的化合物(例如,美国专利号6,313,138 B1); VEGF多肽(例如,美国专利号6,270,933 B1和WO 99/47677);在核酸水平上抑制VEGF表达的寡核苷酸,例如反义RNA(例如,美国专利号5,710,136; 5,661,135; 5,641,756; 5,639,872;和5,639,736)。类维生素A(例如,美国专利号6,001,885);含有生长因子的组合物(例如,美国专利号5,919,459);与胶原蛋白结合的抗体(例如,WO 00/40597);以及具有抑制血管生成活性的各种有机化合物和其他试剂(美国专利号6,297,238 B1、6,258,812 B1和6,114,320)。\n\n抗VEGFAgent的给药\n\n一旦诊断出患者患有眼的新血管疾病,就可以通过给予抗VEGF药物治疗,以阻断VEGF的不良作用,从而减轻与新血管形成有关的症状。如上所述,各种各样的抗VEGF剂\n\n在本领域中是已知的并且可以在本发明中使用。制备这些抗VEGF剂的方法也是众所周知的,并且许多是可商购的药物。\n\n可以全身性地施用抗-VEGF剂,例如。口服或通过IM或IV注射,与适于给药途径的药学上可接受的载体混合。多种生理上可接受的载体可用于施用抗VEGF剂,其制剂是本领域技术人员已知的,例如在《雷明顿药物科学》(Remington\'s Pharmaceutical Sciences)中描述(18th 版),编辑。 A. Gennaro,1990年,Mack Publishing Company,宾夕法尼亚州伊斯顿和Pollock等人。\n\n抗VEGF剂优选肠胃外施用(例如,通过肌内,腹膜内,静脉内,眼内,玻璃体内,或皮下注射或植入)。肠胃外给药的制剂包括无菌水溶液或非水溶液,悬浮液或乳剂。可以使用各种水性载体,例如水,缓冲水,盐水等。其他合适的媒介物的例子包括聚丙二醇,聚乙二醇,植物油,明胶,氢化萘和可注射的有机酯,例如油酸乙酯。这样的制剂还可包含辅助物质,例如防腐剂,湿润剂,缓冲剂,乳化剂和/或分散剂。生物相容性,可生物降解的丙交酯聚合物,丙交酯/乙交酯共聚物或聚氧乙烯-聚氧丙烯共聚物可用于控制活性成分的释放。\n\n或者,可以通过口服摄取给予抗VEGF剂。可以根据本领域已知的用于制备药物组合物的任何方法以固体或液体形式制备用于口服的组合物。所述组合物可任选地包含甜味剂,调味剂,着色剂,加香剂和防腐剂,以提供更可口的制剂。\n\n口服固体剂型包括胶囊剂,片剂,丸剂,散剂和颗粒剂。通常,这些药物制剂含有与无毒的药学上可接受的赋形剂混合的活性成分。\n\n这些可以包括例如惰性稀释剂,例如碳酸钙,碳酸钠,乳糖,蔗糖,葡萄糖,甘露醇,纤维素,淀粉,磷酸钙,磷酸钠,高岭土等。也可以使用粘合剂,缓冲剂和/或润滑剂(例如硬脂酸镁)。片剂和丸剂还可以用肠溶衣制备。\n\n口服给药的液体剂型包括药学上可接受的乳剂,溶液剂,混悬剂,糖浆剂和明胶软胶囊。这些形式包含本领域常用的惰性稀释剂,例如水或油介质,并且还可以包括佐剂,例如湿润剂,乳化剂和悬浮剂。\n\n抗VEGF剂也可以局部施用,例如通过贴剂或通过直接施用于眼睛,或通过离子电渗疗法。\n\n可以以持续释放组合物的形式提供抗VEGF剂,例如在美国专利号5,672,659和5,595,760中描述的那些。立即或持续释放组合物的使用取决于所治疗病症的性质。如果病症由急性或过度急性疾病组成,则与延长释放组合物相比,优选立即释放形式的治疗。或者,对于某些预防或长期治疗,缓释组合物可能是合适的。\n\n抗VEGF剂也可以使用眼内植入物递送。这样的植入物可以是可生物降解的和/或生物相容的植入物,或者可以是不可生物降解的植入物。植入物对于活性剂可以是可渗透的或不可渗透的,并且可以被插入眼睛的腔室中,例如前腔或后腔,或者可以被植入在晶状体,经脉络膜间隙或玻璃体外部的无血管区域中。在一个优选的实施方案中,植入物可以定位在诸如巩膜上的无血管区域上,以允许药物经跨膜扩散到期望的治​​疗部位,例如,在皮肤上。眼内空间和眼睛黄斑。此外,经巩膜扩散的位点优选在黄斑附近。\n\n用于递送抗VEGF剂的植入物的实例包括但不限于美国专利第3,416,530号;和3,828,777; 4,014,335; 4,300,557; 4,327,725; 4,853,224; 4,946,450; 4,997,652; 5,147,647; 5,164,188; 5,178,635; 5,300,114; 5,322,691; 5,403,901; 5,443,505; 5,466,466; 5,476,511; 5,516,522; 5,632,984; 5,679,666; 5,710,165; 5,725,493; 5,743,274; 5,766,242; 5,766,619; 5,770,592; 5773,019; 5,824,072; 5,824,073; 5,830,173; 5,836,935; 5,869,079,5,902,598; 5,904,144; 5,916,584; 6,001,386; 6,074,661; 6,110,485; 6,126,687; 6,146,366; 6,251,090;专利号为6,299,895,WO 01/30323和WO 01/28474的专利,其全部通过引用并入本文。\n\n剂量\n\n与载体材料组合以产生单一剂量的活性成分的量将根据所治疗的受试者和特定的给药方式而变化。通常,应以足以减轻或消除眼新血管疾病的症状的量施用抗VEGF剂。\n\n每次给药约1pg / kg体重至100mg / kg体重的剂量水平可用于治疗上述新血管疾病。当直接施用于眼睛时,优选的剂量范围是每只眼睛约0.3mg至约3mg。该剂量可以单剂量或分成多剂量给药。通常,所需剂量应按设定的时间间隔延长,通常至少数周,尽管可能需要更长的几个月或更长的时间。\n\n本领域技术人员将理解,可以根据多种因素对确切的个体剂量进行一些调整,所述因素包括所施用的特定抗-VEGF剂,施用时间,施用途径,制剂的性质,排泄率,所治疗的特定疾病,疾病的严重程度以及患者的年龄,体重,健康状况和性别。考虑到各种给药途径的不同效率,所需剂量的宽泛变化是可以预期的。例如,通常可以预期口服\n\n与静脉内或玻璃体内注射相比,需要更高的剂量水平。这些剂量水平的变化可以使用本领域公知的用于优化的标准经验程序来调节。考虑到上述确定的因素,精确的治疗有效剂量水平和模式优选由5位主治医师确定。\n\n除了治疗已有的新血管疾病,还可以预防性地施用抗VEGF药物,以预防或减缓这些疾病的发作。在预防性应用中,向易患特定新血管疾病或以其他方式处于特定新血管疾病风险的患者施用抗VEGF剂。 10同样,精确的给药量取决于各种因素,例如患者的健康状况,体重等。\n\n抗VEGF疗法的有效性\n\n为了评估抗VEGF疗法治疗眼部新生血管的有效性,我们进行了以下15个实例中所述的多项研究,涉及在患有和不患有光动力疗法的患者中施用抗VEGF适体继发于年龄相关性黄斑变性的小凹脉络膜新生血管形成。对于继发于年龄相关性黄斑20变性(AMD)的小凹下脉络膜新生血管(CNV)患者的抗VEGF治疗的1A期单次玻璃体内注射研究显示了出色的安全性(实施例6)。眼科评估显示,治疗后3个月,有80%的患者表现出稳定或改善的视力,而在这段时间,有27%的眼睛在ETDRS图表上表现出3线或更高的视力改善。本地或系统均未报告重大相关不良事件。这25个数据表明,抗VEGF治疗是治疗眼部新生血管疾病(包括渗出性黄斑变性和糖尿病性视网膜病)的有希望的新途径。\n\n我们还使用多次玻璃体内注射抗VEGF进行了抗VEGF治疗的IB期多重降剂量安全性研究\n\n继发于AMD的中央凹下CNV患者中有或没有光动力疗法的30种适体(实施例7)。安全性研究表明没有重大安全性\n\n与毒品有关的问题。眼科评估显示,治疗后3个月,仅接受抗VEGF适体的患者中有87.5%的患者视力稳定或改善,而在这段时间,有25%的眼睛的视力在ETDRS图表上显示3线或更高。在同时接受抗VEGF适体和光动力疗法的患者中,在3个月时出现了60%的3线增加。在该IB期研究中,多次玻璃体内注射抗VEGF适体具有很好的耐受性。\n\nIB期玻璃体内多次注射抗VEGF治疗的临床研究(实施例7)的结果扩展了我们的1A期单次注射研究(实施例6)报告的出色安全性。具体而言,IB期研究显示了每月连续3次连续注射抗VEGF适体玻璃体内注射的眼内和全身安全性。没有发现严重的相关不良事件。在某些情况下,所遇到的不良事件似乎无关或较小,可能是由于玻璃体内注射本身引起的。\n\n仅在25%的适体治疗组在3个月时观察到的3线增益优于历史对照,例如3个月时PDT(2.2%)及其对照(1.4%)的关键试验结果(Arch Ophthalmol) 1999,117:1329-1345)和假放射控制组(3%)(Ophthalmology 1999,106; 12:2239-2247),在同一时间段内,不超过3%的患者表现出这种改善。\n\n3个月时3线增加25%与适体1A期研究中指出的26.7%改善率一致。在这些情况下,药物的抗渗透作用可能导致视网膜下液吸收,从而改善视力。有趣的是,最近使用Genentech的抗VEGF抗体片段进行的一项研究在一项1期临床试验中也显示26%的3系增值率。该抗体片段与抗VEGF适体具有相同的阻断细胞外VEGF的机制。\n\nIB期研究在3个月时观察到的稳定或改善率为87.5%,也与该关键试验中以PDT治疗的患者的50.5%的增长率相称(Arch Ophthalmol 1999,117:1329-1345),\n\nPDT对照组的比率为44%,假放射对照组的比率为48%(Ophthalmology 1999,106; 12:2239-2247)。\n\n同时接受抗VEGF适体和PDT的患者在3个月时60%的3线增益也令人鼓舞。在关键的3期PDT试验中,只有2.2%的患者显示出这种视觉改善(Arch Ophthalmol 1999,117:1329-1345)。这两个研究组均包括具有经典小凹下CNV的眼睛。研究人员发现,只有40%的病例选择在3个月时用PDT进行再治疗,而在关键性PDT试验中报道的93%的再治疗率中,这一发现支持了在这些眼睛中观察到的视力改善(Arch Ophthalmol 1999,117:1329-1345)。\n\n此外,许多临床前研究表明抗VEGF疗法可预防VEGF诱导的角膜,虹膜,视网膜和脉络膜新血管形成(Arch Ophthalmol 1996,114:66-7; Invest Ophthalmol Vis Sci 1994,35: 101)。以下在实施例1-5中用EYE001描述的临床前研究提供了证据,表明抗VEGF疗法可用于降低血管通透性和眼新血管形成。抗VEGF适体在ROP视网膜新血管形成模型中显示出强大的功效,与对照组相比,其中80%的视网膜新血管形成被抑制(p = 0.0001)。 Miles分析模型显示,添加EYE001后,VEGF介导的血管渗漏几乎完全减弱,而角膜血管生成模型也显示EYE001显着减少了新血管形成。在豚鼠中进行的Miles Assay研究表明,抗VEGF适体可以显着降低血管通透性。降低血管通透性的这种特性可能被证明对减少CNV和糖尿病性黄斑水肿的体液和水肿具有重要的临床意义。因此,抗VEGF疗法可以同时充当抗渗透性和/或抗血管生成剂。\n\n光动力疗法(PDT)\n\n如上所述,本发明方法的一个实施方案涉及与光动力疗法(PDT)联合施用抗-VEGF剂。 PDT是一个两步过程,从本地或系统开始\n\n施用吸收性光敏剂,例如卟啉衍生物,其选择性地累积在患者的靶组织中。在用活化波长的光照射时,在含有光敏剂的细胞中会产生活性氧,从而促进细胞死亡。例如,在以眼新血管形成为特征的眼疾病的治疗中,选择在眼睛的新脉管系统中蓄积的光敏剂。然后,将患者的眼睛暴露在适当波长的光下,这会导致异常血管的破坏,从而提高患者的视力。\n\n光敏剂\n\n可以使用多种光敏化合物中的任何一种来进行根据本发明的光动力疗法。例如,光敏剂可以是任何一种化合物,其收集在一种或多种类型的选定目标组织中,并且当暴露于特定波长的光时,吸收该光并引起目标组织的损伤或破坏。实际上,可归入选定靶标并吸收光的任何化学化合物均可用于本发明。优选地,光敏剂对施用它的动物是无毒的并且能够被配制成无毒的组合物。光敏剂还优选其光降解形式是无毒的。理想的光敏剂的特征在于在没有光化学作用的情况下对细胞没有毒性,并且易于从非目标组织中清除。\n\n可以在例如Sem的Kreimer-Bimbaum中找到光敏剂的全面清单。血红素1989年第26:157-73页。光敏化合物包括但不限于二氢卟酚,细菌绿素,酞菁,卟啉,紫嘌呤,部花青素,脱镁叶绿酸,补骨脂素,氨基乙酰丙酸(ALA),血卟啉衍生物,卟啉,卟啉花青,膨胀卟啉像化合物和前药(例如8-氨基乙酰丙酸),它们可以产生药物如原卟啉。 (例如参见美国专利号5,438,071、5,405,957、5,198,460、5,190,966、5,173,504、5,171,741、5,166,197、5,095,030、5,093,349、5,079,262、5,028,621,\n\n5,002,962; 4,968,715; 4,920,143; 4,883,790; 4,866,168;和4,649,151。)优选的光敏剂是苯并卟啉衍生物(BPD),单天冬氨酰二氢卟酚e6,酞菁锌,锡紫嘌呤,四羟基四苯基卟啉和卟啉钠(PHOTOFRIN®)。一类特别有效的光敏剂包括绿色卟啉,其在Levy等人的美国专利No.5,200,400中有详细描述。 5,171,749。\n\n上述的任何光敏剂均可用于本发明的方法。当然,也可以使用两种或多种光敏化合物的混合物。然而,治疗的有效性取决于光敏剂对光的吸收,因此,如果使用混合物,则优选具有最大吸收最大值的组分。\n\n本发明的光敏剂优选具有在350nm至1200nm之间,优选在约400nm至900nm之间,最优选在600nm至800nm之间的波长范围内的吸收光谱。\n\n配制光敏剂以向目标眼组织提供有效浓度。光敏剂可以与特异性结合配体偶联,该特异性结合配体可以与靶眼组织的特定表面组分结合,或者如果需要,可以通过与向靶组织递送更高浓度的载体一起配制。制剂的性质将部分取决于给药方式和所选的光敏剂的性质。可以使用适合于特定光敏化合物的任何药学上可接受的赋形剂或其组合。因此,光敏剂可以以水性组合物,透粘膜或透皮组合物或口服制剂的形式给药。\n\n如前所述,本发明的方法特别有效地治疗患有与有害的新脉管系统有关的视敏度下降的患者。已经显示出增加的LDL受体数目与新血管形成有关。绿色卟啉,特别是BPD-MA,与此类脂蛋白强烈相互作用。 LDL本身可以用作绿色卟啉的载体,也可以使用脂质体制剂。脂质体\n\n据信制剂可将绿色卟啉选择性地递送至血浆的低密度脂蛋白组分,其进而充当载体以将活性成分更有效地递送至所需部位。通过增加绿色卟啉在血液脂蛋白相中的分配,脂质体制剂可导致将光敏剂更有效地递送至新脉管系统。涉及脂质复合物的绿色卟啉组合物包括脂质体,描述于美国专利No. 5,214,036。可以从不列颠哥伦比亚省温哥华的QLT PhotoTherapeutics Inc.获得用于静脉内给药的脂质体BPD-MA。\n\n可以以多种方式中的任何一种局部或全身性地施用光敏剂,例如口服,肠胃外(例如静脉内,肌肉内,腹膜内或皮下注射),局部通过贴剂或植入物,或者可以将化合物直接放置在眼。光敏剂可以以干燥制剂例如丸剂,胶囊剂,栓剂或贴剂给药。光敏剂也可以以液体制剂的形式与水一起或与药学上可接受的赋形剂一起施用,例如在上文《雷明顿药物科学》中所公开的。液体制剂也可以是悬浮液或乳液。用于乳剂悬浮液的合适的赋形剂包括水,盐水,右旋糖,甘油等。这些组合物可包含少量的无毒辅助物质,例如润湿剂或乳化剂,抗氧化剂,pH缓冲剂等。\n\n光敏剂的剂量可以根据多种因素而有很大的不同,例如光敏剂的类型;以及管理方式;载有它的制剂,例如脂质体形式;或是否与靶标特异性配体(例如抗体或免疫活性片段)偶联。影响光敏剂剂量的其他因素包括所寻找的靶细胞,患者的体重以及光照时间。尽管各种光敏化合物需要不同的剂量范围,但如果使用绿色卟啉,则典型剂量为0.1-50\n\n毫克/米2 (体表面积的)优选约1-10mg / M2 甚至更优选约2-8mg / M。\n\n本发明中用于光动力疗法的各种参数是相互关联的。因此,还应该相对于其他参数来调整剂量,例如,通量,辐照度,光动力疗法中使用的光的持续时间以及给药与治疗辐照之间的时间间隔。所有这些参数都应进行调整,以显着提高视力,而又不严重损害眼组织。\n\n光疗\n\n在将光敏剂施用于患者之后,用被使用的光敏剂吸收的波长的光照射目标眼组织。本文所述的光敏剂的光谱在本领域中是已知的。对于任何特定的光敏化合物,确定光谱是一件小事。对于绿色卟啉,所需的波长范围通常在约550至695nm之间。为了增强对身体组织的渗透,特别优选该范围内的波长。\n\n由于暴露于光下,光敏剂进入激发态并被认为与其他化合物相互作用形成反应性中间体,例如单线态氧,这可能会导致细胞结构破坏。可能的细胞靶标包括细胞膜,线粒体,溶酶体膜和细胞核。来自肿瘤和新血管模型的证据表明,脉管系统的阻塞是光动力疗法的主要机制,这是通过对内皮细胞的损害,随后的血小板粘附,脱粒和血栓形成而发生的。\n\n照射处理期间的注量可以根据组织的类型,目标组织的深度以及上覆的液体或血液的量而变化很大,但优选在约50-200焦耳/厘米之间2。\n\n辐照度通常约为150-900 mW / cm2,范围介于150-600 mW / cm之间2 是首选。然而,可以选择使用较高的辐照度是有效的并且具有缩短治疗时间的优点。\n\n施用光敏剂后直至进行光治疗的最佳时间也可根据施用方式,施用形式和所靶向的特定眼组织而广泛变化。施用光敏剂后的典型时间为约1分钟至约2小时,优选约5-30分钟,更优选约10-25分钟。\n\n辐射暴露的持续时间优选在约1至30分钟之间,这取决于辐射源的功率。光照射的持续时间还取决于所需的通量。例如,对于600 mW / cm的辐照度2,通量为50 J / cm2 需要90秒的照射时间; 150 J /厘米2 需要270秒的照射时间。\n\n辐射进一步由其强度,持续时间和相对于光敏剂投配的时间(注入后间隔)定义。该强度必须足以使辐射穿透皮肤和/或到达要治疗的目标组织。持续时间必须足以使足够的光敏剂光活化以作用于靶组织。强度和持续时间都必须受到限制,以避免使患者过度劳累。上光前的后注入间隔很重要,因为通常在施用光敏剂后,光越早施加,1)所需的光量越低,2)光敏剂的有效量越低。\n\n尽管在某些情况下约24小时后会出现轻度的视网膜增白,但临床检查和眼底照相通常在光动力治疗后不会立即显示颜色变化。脉络膜新血管形成的闭合优选通过观察内皮细胞的损伤在组织学上证实。观察检测空泡化的细胞质和\n\n还可以评估与新血管组织破坏相关的异常核。\n\n通常,可以在治疗后的指定时间使用标准的荧光素血管造影技术来执行光动力疗法在减少新生血管方面的效果。 PDT的有效性也可以通过使用本领域标准的方法对视敏度进行临床评估来确定,例如常规的视力表,其中视敏度是通过辨别一定大小的字母(通常在字母上带有五个字母)的能力来评估的给定尺寸的线。\n\n其他治疗新生血管疾病的疗法\n\n除PDT外,还有许多其他治疗新血管疾病的疗法可与抗VEGF疗法结合使用。例如,一种称为热激光光凝的光疗形式是用于治疗一系列眼疾的标准眼科手术,这些眼疾包括视网膜血管问题(例如糖尿病性视网膜病),脉络膜血管问题和黄斑病变(例如老年性黄斑变性)。 )。该过程涉及使用激光烧灼患者眼睛中的异常血管,以将其密封以免进一步泄漏。 (参见例如Arch.Ophthalmol.1991,109:1109-1114)。或者,可以将能够减少或预防不希望的新脉管系统发展的化合物,包括其他抗VEGF剂,抗血管生成剂或其他抑制眼新血管形成发展的试剂与抗VEGF疗法组合使用。\n\n现在将在以下描述优选技术和实验结果的实施例中更具体地描述和指出本发明的特征和其他细节。提供这些实施例是为了说明本发明,而不应解释为限制性的。\n\n例子\n\n在以下实施例中,使用抗VEGF聚乙二醇化的适体EYE001。如上所述,该适体是聚乙二醇(PEG)-缀合的寡核苷酸,其以高特异性和亲和力结合至主要的可溶性人VEGF同工型VEGF165。适体以类似方式结合和灭活VEGF。直接针对VEGF的高亲和力抗体。实施例1-5报告了在各种眼新血管形成模型中用抗VEGF适体进行的研究的临床前结果,实施例6报告了具有渗出性AMD的人的IA期临床安全性结果,实施例7报告了IB期临床结果。通常,剂量和浓度仅表示为EYE001(NX1838)的寡核苷酸重量,并基于适体的近似消光系数37pg / mL / A260。\n\n实施例1:皮肤血管通透性测定(Miles测定)\n\nVEGF的生物学活性之一是通过与血管内皮细胞上的受体特异性结合来增加血管通透性。相互作用导致紧密的内皮连接松弛,随后血管液泄漏。通过皮内注射VEGF(Dvorak HF,Brown LF,Detmar M,Dvorak AM)进行豚鼠血管内Evans Blue Dye泄漏后,可以体内测量VEGF诱导的血管渗漏。因子/血管内皮生长因子,微血管通透性和血管生成.Am J Pathol.1995,146:1029。)类似地,该测定法可用于测量化合物阻断VEGF这种生物学活性的能力。\n\n将VEGF] 65(20-30nM)与EYE001(30nM至lpM)进行体外预​​混,然后通过皮内注射将其注射到豚鼠背部剃毛的皮肤中。注射后三十分钟,通过使用计算机形态分析系统对注射部位周围的伊文思蓝染料渗漏进行定量。数据(未显示)证明VEGF-\n\n浓度低至100 nM的EYE001的共同给药可几乎完全抑制诱导性指示剂染料从脉管系统渗漏。\n\n实施例2:角膜血管生成测定\n\n将含有VEGFus(3 pmol)的甲酸酯聚合物小球植入大鼠的彗星基质,以诱导血管生长到正常无血管的角膜中。以1,3和10mg / kg的剂量向大鼠静脉内施用EYE001,每天一次或两次,共5天。在治疗期结束时,对所有单个角膜进行显微照相。通过显微照片的标准形态分析定量了角膜组织中新血管发育的程度及其被EYE001抑制的程度。\n\n数据(未显示)表明,与磷酸盐缓冲液(PBS)相比,用EYE001进行全身治疗可导致角膜中VEGF依赖性血管生成的显着抑制(65%)。每日一次10 mg / kg的治疗与每天两次的治疗一样有效。 3mg / kg剂量具有与10mg / kg剂量相似的活性,但是在1mg / kg下没有明显的功效。\n\n实施例3:早产儿视网膜病变研究\n\n即使ROP与糖尿病性视网膜病变和AMD明显不同,ROP的小鼠模型也已被用来证明VEGF在这种疾病发生的异常视网膜血管生成中具有作用(Smith LE,Wesolowski E,McLellan A,Kostyk SK,Amato DR,Sullivan R,D\'Amore PA。氧气引起的小鼠视网膜病变,Invest Ophthalmol Vis Sci。1994,35:101。)这些数据为研究该模型中EYE001的抗血管生成特性提供了理论依据。\n\n分别将9只,8只,8只,8只,7只和7只小鼠的窝放在室内空气中或使之过氧化,并用PBS或EYE001(1、3或10 mg / kg /天)进行腹膜内处理。分析的终点,即新毛细血管的生长\n\n通过显微镜鉴定和计数来自所有治疗和对照小鼠的每只眼睛的20个组织学切片中的新生血管芽,来评估进入玻璃体液的视网膜的内部限制膜。在10 mg / kg和3 mg / kg的剂量下,相对于未处理的对照组,视网膜新血管的减少均达到80%(两种方法均p = 0.0001)。\n\n实施例4:人肿瘤异种移植\n\n在植入裸鼠的人类肿瘤异种移植物(A673横纹肌肉瘤和Wilms肿瘤)中测试了EYE001的体内功效。在两种情况下,在确定的肿瘤(200mg)发生后,每天一次腹膜内给予10mg / kg EYE001治疗小鼠。对照组用序列加扰的对照适体(寡核苷酸)处理。\n\n每天一次用10 mg / kg的EYE001处理小鼠,相对于对照组,可抑制A673横纹肌肉瘤的生长80%,抑制Wilms肿瘤的84%。在Wilms肿瘤模型中,治疗终止两周后,在治疗的动物中肿瘤大小反弹得非常剧烈,以致与对照组相比,肿瘤大小不再存在任何差异。\n\n实施例5:EYE001在兔体内的玻璃体内药代动力学\n\n根据所有适用的州和联邦准则获取和照护兔子,并遵守“实验室动物护理原则”(NIH出版物#85-23,1985年修订)。通过玻璃体内注射对总共18只雄性新西兰白兔进行EYE001。每只动物接受剂量为40 pL /只眼睛的双侧注射0.50 mg /只眼睛(1.0 mg /只动物)。给药后的28天内收集EDTA血浆和玻璃体液样品,并冷冻保存(-70°C)直至进行分析。通过放血处死动物后,分别收集每只眼睛的玻璃体液。玻璃体液样品中的EYE001浓度是通过HPLC分析方法确定的,该方法与Tucker等人先前描述的方法类似。抗血管内皮生长因子寡核苷酸适体(NX1838)的检测和血浆药代动力学\n\n恒河猴。 J. Chromatogr。生物医学。 (Appl.Appl.1999,732:203-212)和通过双重杂交测定方法,类似于Droletet等人先前描述的方法。 (将抗血管内皮生长因子适体(NX1838)注入恒河猴的玻璃体液后的药代动力学和安全性。Pharm。Res。,2000,17:1503-1510。)玻璃体液浓度是通过将结果取平均值来计算的从这两种测定中。仅通过双重杂交测定法测定血浆中的EYE001浓度。\n\n以0.50 mg /只眼(1.0 mg /只动物)的双边剂量单次注射EYE001后,初始玻璃体液水平约为350 pg / mL,并通过明显的一级消除过程降低至每天约1.7 pg / mL 28.估计的终末半衰期为83小时,与在恒河猴中观察到的94小时半衰期相似(Drolet等人,同上)。服用EYE001后四周,玻璃体液中的药物水平(-190 nM)仍远高于KD 对于VEGF(200 pM),建议每月一次在人体内给药是适当的,前提是假定在兔和人玻璃体液中药代动力学参数具有可比性。与在玻璃体液中发现的高浓度EYE001相比,从第1天到第21天,血浆浓度显着降低,范围从0.092到0.005 pg / mL。估计终端的半衰期为84小时。血浆终末半衰期因此模仿了在恒河猴中观察到的玻璃体液半衰期(Drolet等,同上),并表明了经典的触发器动力学,其中从眼中清除是确定速率的步骤。血浆清除率。这些数据与高度稳定的(核酸酶抗性)适体相吻合,适体从玻璃体液释放到体循环中的速度较慢。\n\n实施例6:临床试验IA研究\n\n我们对因年龄相关性黄斑变性继发于中央凹下CNV的单眼玻璃体内注射EYE001进行了多中心,开放标签,剂量递增的研究\n\n超过ETDRS图表上的20/200。玻璃体内注射一次起始剂量为0.25mg。还测试了0.5、1、2和3mg的剂量。用眼底照相和荧光素血管造影术进行全面的眼科检查。总共治疗了15名患者。\n\n选择标准。\n\n使用以下纳入和排除标准选择研究对象:\n\n纳入标准:要求患者> 50岁且总体健康状况良好,研究眼的最佳矫正视力低于ETDRS图表上的20/200,至少每个队列的第一位患者为20/400或更低(n = 3);另一只眼的最佳矫正视力等于或优于20/64; >的小凹下CNV(经典和/或隐匿CNV)3.5黄斑光凝研究(MPS)椎间盘区域的大小;清晰的眼球介质和足够的瞳孔扩张,以实现高质量的立体眼底照相;眼压在22mmHg以下。\n\n排除标准:排除包括明显的介质混浊,包括白内障,可能会干扰视力,毒性评估或眼底照相;是否存在眼部疾病,包括青光眼,糖尿病性视网膜病变,视网膜血管阻塞或其他可能严重影响视力的疾病(AMD的CNV除外);存在其他引起CNV的原因,包括病理性近视(球形屈光度等于或等于8屈光度或更高),眼组织胞浆菌病综合征,血管纹,脉络膜破裂和多灶性脉络膜炎;可能被指示或考虑对CNV进行额外激光治疗的患者;研究进入后3个月内的任何眼内手术;占血>病变的50%;先前的玻璃体切除术;除多种维生素和微量矿物质外,先前或与其他研究药物同时治疗AMD的方法;以下任何潜在的系统性疾病,包括不受控制的糖尿病或糖尿病性视网膜病的存在;入选研究前12个月内的心脏病,包括心肌梗塞,和/或与心电图相关的临床症状和/或局部缺血迹象相关的冠状动脉疾病;中风(学习12个月内\n\n条目);活动性出血性疾病;在进入研究的一个月内进行任何重大外科手术;进入研究后6个月内出现活动性消化性溃疡疾病并伴有出血;并同时使用皮质类固醇(例如口服泼尼松)或其他抗血管生成药物(例如沙利度胺)进行全身治疗。\n\n研究药物。\n\n药物产品是一种即用型无菌溶液,由溶于10mM磷酸钠和0.9%氯化钠缓冲液中的EYE001(以前为NX1838)组成,并装在无菌且无热原的1 co玻璃体注射器针筒中,并带有带涂层的塞子。连接到一个塑料柱塞上,并在预先连接的27号针头上安装一个橡胶端盖。以1、2、5、5、10、20或30mg / ml EYE001的活性药物浓度(表示为寡核苷酸含量)提供聚乙二醇化的适体,以提供-100p1的递送体积。\n\n病人登记。\n\n在招募患者进入研究之前,已获得机构审查委员会(IRB)的书面批准,包括知情同意书和任何其他患者信息。\n\n结果。\n\n在15名患者中进行了单剂量范围的安全性研究,剂量范围为每只眼睛0.25至3.0 mg,但未达到剂量限制的毒性。制剂的粘度防止剂量进一步升高超过3mg。患者年龄从64岁到92岁不等。八名男性和七名女性进入,所有都是白种人。 15例患者中有11例经历了17例轻度或中度不良事件,包括6例,这些事件可能或可能与EYE001的给药有关:轻度眼内炎症,深囊肿,视力扭曲,荨麻疹,眼痛和疲劳。此外,还有一个严重的不良事件,与受试药物无关。这是对一名患者的诊断,该患者在治疗前已被发现肿块。\n\n注射EYE001后3个月,每15眼(80%)中有12眼显示稳定或改善的视力。在同一时间点,有四名患者(26.7%)的视力显着改善,这在ETDRS图表上被定义为视力增加3线或更高。在3个月时视力得到改善的患者在ETDRS图表上注意到+ 6,+ 4和+3线增加。没有发现意外的视觉安全事件。彩色照片和荧光素血管造影照片的评估显示,没有视网膜或脉络膜毒性的迹象。\n\n我们的IA期临床研究表明,玻璃体内单剂量的抗VEGF适体可以安全地施用至3mg /眼。没有发现明显的眼部或全身性副作用。\n\n临床医生一致认为,至少要进行一年的随访才能评估渗出性AMD的任何潜在治疗方法。然而,可以从一些前瞻性研究中获得3个月的数据,这对于评估眼科安全性和新疗法的任何潜在趋势都是有用的。\n\n历史对照表明,只有1.4%(关键的光动力学试验)(Arch Ophthalmol 1999,117:1329-1345)和3.0%(放射线研究)(1999,106; 12:2239-2247)的眼睛显示出明显的视力改善在3个月内在ETDRS图表上获得3条或更多条线的收益。此外,TAP研究的PDT治疗组(Arch Ophthalmol 1999,117:1329-1345)仅注意到3个月时2.2%的患者视力得到改善。这些发现证实了我们的临床印象,即在任何时间范围内,对于继发于AMD的任何类型(经典,隐匿或混合)的CNV,都很少见到明显的视觉改善。\n\n在我们的研究中,玻璃体内注射抗VEGF适体后三个月,ETDRS图表上80%的眼睛表现出稳定或改善的视力,有26.7%的眼睛表现出增加了3条或更多条线。在某些适体治疗的患者中,这些视觉改善得到临床和血管造影结果的支持。稳定视力一直是AMD渗出性研究的目标,因此,仅用一剂3个月的患者中,有26.7%的患者出现显着的视力改善(3条ETDRS谱系),这是出乎意料的。显然,历史控件不适合进行比较。除此之外\n\n随访期短,样本量小以及CNV类型不同(即经典,隐匿或混合CNV的百分比)排除了任何最终结论或比较结果。然而,似乎经过适体处理的眼睛在3个月时肯定显示出至少出色的视觉安全性,因此有必要进行进一步研究。\n\n总之,单次玻璃体内注射抗VEGF适体的临床前和早期临床结果非常令人鼓舞。已确定单剂量玻璃体内注射剂量最高至3mg /眼的安全性。\n\n实施例7:IB期临床试验研究\n\n我们进行了多中心,开放标签,重复剂量的IB期研究,研究了3mg /只眼的EYE001(抗VEGF适体)对继发于AMD的小凹下CNV患者的视力低于20/100的情况,并且如果另一只眼睛的剂量超过或等于20/400。如果3位或更多患者经历了限剂量毒性(DLT\'s),则根据需要将剂量降低至2mg,然后降低至Tmg。预期要治疗的患者人数为20; 10例单独使用抗VEGF适体和10例同时使用抗VEGF治疗和PDT。选择了美国的11个地点进行研究。\n\nDLT的定义\n\n如果研究中的患者经历了以下DLT中的任何一种,则如上所述减少剂量:\n\n眼科DLT:\n\n摄影评估。\n\n白内障的加速形成:由年龄相关性眼病研究(AREDS)镜头不透明度分级协议定义的一个单元的进展,该协议改编自威斯康星州白内障分级系统。\n\n临床检查。\n\n临床上明显的炎症,严重的炎症(模糊了视网膜血管的可视化)和视力威胁。\n\nAMD患者通常不常见的其他眼部异常,例如视网膜,动脉或静脉阻塞,急性视网膜脱离和弥漫性视网膜出血。\n\n视敏度:视力角加倍或变差(丢失15封字母);起始视力得分小于15个字母的患者过渡到无光感知(NLP),除非视力下降是由于与注射过程相关的玻璃体出血引起的,该玻璃体出血与第2天至第7天,第30-35天或第58天之间相关-63。\n\n眼压计:从眼内压(IOP)的基线增加>两次分开检查至少间隔25mmHg,至少间隔一天,或者持续30周汞柱压力持续一周以上,尽管有药理干预。\n\n荧光素血管造影\n\n在基线处未发现明显的视网膜或脉络膜血管异常,例如:脉络膜不全切开(影响一个或多个象限),动静脉传输时间延迟(大于15秒);视网膜动脉或静脉阻塞(与基线的任何偏差);眼内无炎症时,视网膜弥漫性或弥漫性视网膜通透性改变会影响视网膜循环\n\n系统性DLT:\n\n研究者认为具有III级(严重)或IV级(威胁生命)的毒性,或任何与研究药物有关的重大严重毒性。\n\n选择标准。\n\n使用以下纳入和排除标准选择研究对象:\n\n纳入标准:眼科标准包括研究眼的最佳矫正视力低于ETDRS图表上的20/100,同眼的最佳矫正视力等于或高于20/400,具有活动CNV的小凹下脉络膜新血管形成(继发于年龄相关性黄斑变性,清晰的眼中膜和足够的瞳孔扩张以允许高质量的立体眼底照相以及21mmHg或更低的眼内压继发的小于12个椎间盘总面积。一般标准包括50岁以下的男女患者;表现状态10克/分升;血小板计数£150 x 109/ l;白细胞>4 x 10?/ l;在正常机构范围内的PIT;足够的肾功能:血清肌酐和BUN在正常(ULN)机构上限的2倍之内;足够的肝功能:血清胆红素; 00 [Raffias®眼睑下垂0 5(45.4)眼睑水肿/红斑1(10)2(18.2)结膜注射1(10)0化学性0 1(9-1)结膜下出血1(10)1(9.1)干眼1 (10)0角膜擦伤0 3(27.3)前房炎症1+细胞示踪3(30)4(36.4)细胞示踪细胞1 + KP;示踪细胞示踪细胞示踪细胞示踪细胞IOP增加1(10)0瞳孔异常0 0腿病0 1(9.1)白内障0 0玻璃体雾度1(10)2(18.2)玻璃体脱垂0 1(9.1)玻璃体漂浮物4(40) )0小行星透明质酸1(10)0眼内空气1(10)0乳头周围出血0 1(9.1)\n\n(iW\'DU Oteffcfife色素上皮脱落0 1(9.1)视力异常1(10)0视力检查1(10)0异物感1(10)2(18.2)眼痛1(10)3(27.3)眼睑痉挛0 1 (9.1)眼刺激2(20)1(9.1)眼压0 1(9.1)眼)炎1(10)0撕裂1(10)0头痛1(10)0犀牛\'0 1(9.1)疲劳1(10 )2(18.2)虚弱1(10)0关节痛0 1(9.1)上呼吸道感染0 1(9.1)膀胱感染0 1(9.1)\n\n表1B。与单独给予抗VEGF适体有关的不良事件。\n\nk ......可能是:玻璃体漂浮物4前房炎症3眼刺激2玻璃体雾度1眼压升高1眼内空气1结膜下出血\'1结膜注射1眼痛1眼睑水肿/红斑1眼干1可能:小行星透明质酸1视力异常1疲劳1无关:头痛1虚弱1\n\n表1C。与抗VEGF适体和PDT给药相关的不良事件。\n\nAarase Eras E&aftnrfittp1 \'••-•-qir bi\'。 i .7 * -j * ..(- - \'*。•                                   一种 : \" -•* •• *。 ! ____________________。 \" J。 。 -J .-.- I ---•L ____.-.。可能是:上睑下垂5前房炎症4擦伤3眼痛3异物感2化学反应1结膜下出血1玻璃体脱垂1可能:疲劳2无关:色素上皮脱离1关节痛1上呼吸道感染1膀胱感染\n\n两名选择提前退出研究的患者。一名患者认为她的视力没有改善,也不想进一步注射。另一位患者有抑郁和运输问题。在第三次也是最后一次注射适体之前,两名患者均撤回了同意书。两名患者的视力在整个研究期间均保持稳定。第三名患者在最后一次就诊之前死亡。\n\n研究中的任何患者均无需降低剂量。回顾这些患者的彩色照片和荧光素血管造影照片,未发现视网膜血管或脉络膜毒性的迹象。\n\n在完成单独使用抗VEGF适配子的3个月治疗方案的患者中(N = 8),在3个月时,ETDRS图表上的稳定视力或改善了视力的3线患者中有87.5%稳定了视力或改善了视力,有25.0%的患者视力得到了3线改善(请参见表2)。\n\n表2.仅用抗VEGF适体治疗的小凹下CNV患者的视觉数据。\n\n太太1 gStoefftUtaB 03-00)20/50 20/40 20/40 20/32 20/32 +2 04-001 20/125 20/64 20/80 20/80 20/80 +2 06-001 20/160 20 / 125 20/100 20/125 OUT +1 07-00)20/100 20/100 20/64 20/80 20/80 +1 07-002 20/320 20/80 20/64\'20/64 20/50 +8 08-001 20/125 20/125 20/100 20/100 20/160 -1 09-001 20/500 20/200 20/400 20/320(第36天)OUT +2 10-001 20/500 20/640 20/500 20/400 20/500 0 10-002 20/200 20/125 20/160 20/160 20/160 +1 1 10-003 20/400 20/160 20/160 20/160 20 / 126 +5\n\n在3个月内更改视力\n\n........•EYE001已治疗-(N = 8),代表完成方案的所有眼睛。 87.5%25.0%\n\n11例患者同时接受了抗VEGF适体和PDT的治疗。在完成3个月治疗方案的这一组患者(N = 10)中,\n\n5 90%的人视力稳定或改善,而60%的人三视力改善了\n\n3个月时ETDRS图表上的视觉(表3)。这些3条线的改进包括+ 3,+ 5,+ 4,+ 4,+ 6和+3 ETDRS视线的增益。\n\n表3.用抗VEGF适体联合PDT治疗的小凹下CNV患者的视觉数据。\n\ni GdfigfflO\'dBK / Ito>! iA-uA\'jijr; ,-。,,?>s。 n ^ ss: -[&®2C0\'\" W肉酱\n\n在3个月内更改视力\n\n EYE001已处理-(N = 10),代表完成方案的所有眼睛。 90%60%\n\n在其余未表现出三线增加的患者中,只有一名在3个月时出现视力下降,并且该患者在该时间点仅失去了一条视线。该组中的任何一个患者在三个月内都没有失去一个以上的视线。\n\n在研究的整个过程中,在10眼中的4眼(40%)中进行了3个月的重复PDT治疗(其需求完全由研究者确定)。\n\n其他实施方式\n\n尽管已经参考优选实施例描述了本发明,但是本领域技术人员可以容易地确定其基本特征,并且不脱离其精神和范围,可以对本发明进行各种改变和修改以使其适应于各种用途和用途。条件。仅使用常规实验,本领域技术人员将认识到或能够确定本文所述的本发明的具体实施方案的许多等同形式。这样的等同方案旨在包含在本发明的范围内。\n\n本说明书中提及的所有出版物,专利和专利申请均通过引用并入本文。\n\n我们声称:\n\n具有耐腐蚀涂层的稀土金属永磁体及其制备方法\n\n说明技术领域\n\n本发明涉及一种稀土金属基永磁体及其制造方法,该稀土金属基永磁体在表面上具有廉价的耐腐蚀膜,该膜将优异的耐热性和优异的粘附性结合在一起。\n\n背景技术\n\n稀土金属永磁体,例如,以Nd-Fe-B基永磁体为代表的R-Fe-B基永磁体,或以Sm-Fe-N基永磁体为代表的R-Fe-N基永磁体磁体等利用资源丰富且廉价的磁性材料,并且具有优异的磁性能,特别是其中,R-Fe-B基永磁体目前在各个领域中使用。\n\n但是,由于稀土金属系永磁体含有反应性高的稀土金属即R,因此容易在环境中被氧化腐蚀,在不进行表面处理的情况下使用,容易发生腐蚀。在表面存在少量酸性或碱性物质或水时会生锈,从而导致锈蚀\n\n以及磁性能的波动。此外,在将这种生锈的磁铁埋入磁路等的情况下,担心会散布生锈而污染周边部件。\n\n因此,众所周知,在稀土金属类永磁体的表面上形成各种类型的耐蚀膜。\n\n另一方面,随着近来稀土金属类永磁体的应用领域的增加,要求形成在其表面上的耐腐蚀膜不仅具有高耐腐蚀性而且还具有优异的耐热性。 -在严酷的温度变化环境条件下使用时具有良好的耐腐蚀性,以及与嵌入部件时使用的粘合剂代表的有机树脂的粘合性。此外,期望形成的耐腐蚀膜便宜。\n\n因此,本发明的目的是提供一种稀土金属基永磁体,其在表面上具有廉价的耐腐蚀膜,其结合了优异的耐热性和优异的粘合性,并提供了一种生产永磁体的方法。在JP 61231186中,示出了用于防锈涂层的水性组合物,其中将1-30重量%的可溶性硅酸锂和0.01-10重量%的可溶性腈腈添加至水中以进行稀释。\n\n发明内容\n\n鉴于这样的情况,发明人进行了广泛的研究,并且在适当的时候,他们已经注意到形成包含碱金属硅酸盐作为在其上形成的耐腐蚀膜的构成成分的玻璃状保护膜的方法。稀土金属基永磁体的表面。包含碱金属硅酸盐作为构成成分的耐蚀膜是长期以来公知的耐蚀膜之一,并且可以低成本地满足上述要求。然而,在发明人研究的适当过程中,已经发现包括耐腐蚀性在内的膜的性能还不够,并且有必要进一步提高性能。另外,为了提高性能,最近对玻璃状保护膜进行了各种研究。例如,在美国专利No.6174609中提出了一种耐腐蚀膜,其包含3重量%至10重量%的碱金属硅酸盐和90重量%至97重量%的热固性树脂作为构成成分,并且这种构造可以形成具有更高耐腐蚀性的耐蚀膜。然而,发现耐蚀膜的耐热性和粘合性仍然不足。\n\n因此,进行了进一步的研究,发现通过均匀分散4\n\n在包含硅酸锂作为构成成分的膜中预定量的热塑性树脂,硅酸锂和热塑性树脂一致地形成均匀的三维网状结构,则可以获得具有优异耐热性的耐腐蚀膜,即使在严酷的温度变化环境条件下使用时,也可以有效地防止由于膜本身的热收缩而在膜本身中产生的裂纹,或由于热膨胀率差异而在膜与基础磁体之间产生的裂纹,并且可以获得不仅具有与各种类型的粘合剂的优异的粘合性而且具有较少引起粘合性下降的趋势的耐腐蚀膜。\n\n通过以上研究过程完成了本发明,并且如第一权利要求中公开的本发明的稀土金属基永磁体在表面上具有包含硅酸锂和热塑性树脂作为构成成分的耐腐蚀膜,膜中均匀地分散有热塑性树脂,其含量为0.1wt%至50wt%。\n\n本发明的第二权利要求中公开的稀土金属基永磁体是根据权利要求1所述的稀土金属基永磁体,其特征在于,所述膜\n\n还包含硅酸钠作为构成成分。\n\n本发明的第三权利要求中公开的稀土金属基永磁体是根据权利要求2所述的稀土金属基永磁体,其特征在于,所述膜的钠含量为10重量%以下。\n\n本发明的第四方面中所公开的稀土金属基永磁体是根据权利要求1中所述的稀土金属基永磁体,其特征在于,所述热塑性树脂是树脂的无皂水乳液。\n\n技术方案5所述的稀土类永磁体是技术方案1所述的稀土类永磁体,其特征在于,热塑性树脂为丙烯酸-苯乙烯系树脂。\n\n本发明的第六方面的稀土金属类永磁体是根据权利要求1所述的稀土金属类永磁体,其特征在于,所述磁体的被膜覆盖率为0.01g / m。2 至5.0 g / m2 磁体的每单位表面积。\n\n第七项权利要求中公开的本发明的稀土金属基永磁体的生产方法包括:制备处理液,该处理液包含0.1wt%至5wt%的热塑性树脂和2wt%至30wt%的热塑性树脂。\n\n通过将热塑性树脂以无皂的树脂水乳液形式分散在硅酸锂水溶液中,然后将处理液涂到磁体表面上,加热并干燥以获得耐腐蚀性能电影。\n\n本发明的第八方面所述的方法是根据权利要求7所述的方法,其中,所述处理液还含有硅酸钠。\n\n本发明的第九方面公开的方法是根据权利要求8所述的方法,其中,所述处理液的钠含量为1重量%以下。\n\n本发明的第十权利要求中公开的方法是根据权利要求7所述的制造方法,其中,所述热塑性树脂是丙烯酸-苯乙烯树脂。\n\n实施发明的最佳方式\n\n本发明的稀土金属基永磁体在表面上具有包含硅酸锂和热塑性树脂作为构成成分的耐腐蚀膜,该膜中以0.1重量%至50重量%的含量均匀地分散有热塑性树脂。 。\n\n本发明的耐腐蚀膜包含硅酸锂作为构成之一。\n\n组件。包含硅酸锂作为构成成分的耐蚀膜由以Li 2 O-nSiO 2的通式表示的硅酸锂的水溶液形成。本质上具有极好的耐腐蚀性。通式中,n表示摩尔比(SiO2/李2O),并且在本发明中,通常使用n在1.5至1.5范围内的那些。\n\n10。\n\n本发明的耐腐蚀膜含有硅酸锂作为碱金属硅酸盐成分,但是除了硅酸锂以外,还可以含有硅酸钠(水玻璃),硅酸钾或硅酸铵作为构成成分。其中,通过使用硅酸钠作为膜的构成成分,可以确保成膜时的良好的成膜性,与磁铁的密合性。此外,通过使用硅酸钠作为膜的组成成分,如果膜中应该有任何外部裂纹或裂缝,硅酸钠几乎不会溶解到水中,并且会渗透并固化在裂纹或裂缝中,从而表现出自修复腐蚀作用,抵抗功能。在使用硅酸钠作为膜的构成成分的情况下,基于钠含量,优选将其在膜中的含量控制为10重量%以下,更优选为5重量%以下。如果该含量超过10wt%,则可能对所形成的膜的耐水性产生不利影响,这是\n\n担心会导致耐热性和粘合性下降。\n\n作为可用作本发明的耐蚀膜的构成成分的热塑性树脂,例如可以举出丙烯酸树脂,丙烯酸苯乙烯树脂,聚酯树脂,聚酰胺树脂,聚碳酸酯树脂等。热塑性树脂以0.1wt%至50wt%的含量均匀地分散在膜中。如果该含量小于0.1重量%,则形成的膜不能表现出优异的粘合性或耐热性。另一方面,如果含量超过50重量%,则树脂在高温下发生表面凝结,不仅导致耐热性降低,而且对某些类型的粘合剂的粘合性产生影响。均匀分散在膜中的热塑性树脂的含量优选在1wt%至30wt%的范围内,并且更优选在5wt%至20wt%的范围内。\n\n通过将热塑性树脂分散在硅酸锂的水溶液中来制备处理液,然后将处理液喷涂到磁体表面上,或者通过将磁体浸入到浸液涂层中,来形成本发明的耐腐蚀膜。在处理液中,例如通过在60℃至300℃的温度条件下加热并干燥1分钟至120分钟来进行处理。为了在磁体表面上形成具有优异性能的耐腐蚀膜,它是一种\n\n使热塑性树脂均匀分散在处理液中的关键。此外,考虑到批量生产,理想的是,由此制备的处理液具有优异的储存稳定性和长的适用期。考虑到这种情况,优选使用不添加乳化剂(表面活化剂)的不含皂的树脂水性乳液作为热塑性树脂,以分散在硅酸锂水溶液中。由于碱金属硅酸盐的水溶液是碱性的(pH10至pH13;在此pH范围内制备的液体没有腐蚀磁体的问题,并且从处理的环境角度考虑也是优选的),如果热塑性树脂以以下形式分散在其中添加了乳化剂(特别是非离子表面活化剂)的树脂的水性乳液的情况下,常常引起液体中乳液的破坏和树脂的凝胶化,从而导致难以制备其中均匀分散有热塑性树脂的处理液。这种情况可能导致无法形成具有优异性能的耐腐蚀膜。而且,由于上述现象,这种处理液当然在适用期方面较差。\n\n根据发明人的研究,似乎通过将丙烯酸酯-苯乙烯树脂以无皂的树脂水乳液形式分散在硅酸锂水溶液中而制备的处理液极好10\n\n显示出丙烯酸-苯乙烯树脂在处理液中的均匀分散性。因此,通过使用处理液形成的耐腐蚀膜包含均匀分散在膜中的丙烯酸-苯乙烯树脂,以表现出优异的耐热性和粘合性。丙烯酸-苯乙烯树脂表示通过聚合苯乙烯单体和丙烯酸酯单体获得的树脂。作为苯乙烯单体,可以使用苯乙烯,α-甲基苯乙烯等。作为丙烯酸酯单体,可测试的有丙烯酸甲酯,丙烯酸乙酯,丙烯酸丙酯,丙烯酸丁酯,丙烯酸2-乙基己酯,甲基丙烯酸甲酯,甲基丙烯酸乙酯,甲基丙烯酸丙酯,甲基丙烯酸丁酯,甲基丙烯酸2-乙基己酯等。优选的丙烯酸-苯乙烯树脂包括苯乙烯-甲基丙烯酸甲酯共​​聚物,苯乙烯-丙烯酸丁酯共聚物,苯乙烯-甲基丙烯酸甲酯-丙烯酸丁酯共聚物,苯乙烯-甲基丙烯酸丁酯等。作为无皂的水性乳液型丙烯酸-苯乙烯树脂,优选使用旭化成公司的产品例如F-2000(商标)。\n\n作为用于形成具有优异性能的耐腐蚀膜的有利处理液,可以提及含有0.1wt%至5wt%,优选0.5wt%至3wt%形式的热塑性树脂的处理液。树脂的无皂水乳液与2重量%至30重量%的硅酸锂一起使用,并且优选在该组合物中适当地制备处理液\n\n在此范围内的方式应使所含的热塑性树脂均匀地分散在薄膜中。在将硅酸钠作为碱硅酸盐掺入处理液的情况下,处理液的钠含量优选为1重量%以下。\n\n本发明的耐腐蚀膜优选以磁体具有0.01g / m 2的覆盖率的方式形成。2 磁体的每单位表面积大于或等于15nm(膜厚度约15nm或更大)。如果薄膜覆盖率应低于0.01 g / m2因此,担心该膜不能充分发挥作为耐腐蚀膜的性能。膜的覆盖率的上限没有特别限定,但覆盖率过高,难以确保在磁铁的整个面上的均匀的密合性,有可能对与有机树脂的密合性带来不良影响。以胶粘剂为代表。因此,膜的覆盖率的上限优选为5.0g / m 2。2。\n\n作为适用于本发明的稀土金属基永磁体,可以提及已知的稀土金属基永磁体,例如,R-Fe-B基永磁体,R-Fe-N基永磁体,以及R-Fe-N基永磁体。喜欢。其中,从具有高磁性能,具有优异的批量生产性和经济优势,以及具有高磁性的观点出发,如上所述,优选R-Fe-B基永磁体。\n\n表现出与薄膜的优异粘合性。这些稀土金属基永磁体的稀土元素(R)优选为选自Nd,Pr,Dy,Ho,Tb和Sm中的至少一种,或选自La,Ce,Gd,Er,Eu的至少一种, Tm,Yb,\n\n卢和Y\n\n通常,上述稀土金属之一足以用作R,但是实际上,从容易获得等方面考虑,可以使用两种以上的混合物(混合金属,did和喜欢)。\n\n此外,通过添加选自Al,Ti,V,Cr,Mn,Bi,Nb,Ta,Mo,W,Sb,Ge,Sn,Zr,Ni,Si,Zn,Hf和Ga中的至少一种,是可能会提高矫顽力,消磁曲线的矩形度和生产率,或者降低成本。此外,通过用Co代替Fe的一部分,可以在不损害磁特性的情况下提高所得磁体的温度特性。\n\n应用本发明的稀土金属基永磁体可以是烧结磁体或粘结磁体。\n\n此外,可以在本发明的耐腐蚀膜的表面上形成附加膜作为层压体。通过采用这种构造,腐蚀的特性\n\n可以增强或补充抗性膜,可以为膜提供附加功能。\n\n要么\n\n例\n\n更详细地描述本发明\n\n下面通过示例的方式,但是应当理解,本发明不仅限于此。实施例A:根据例如美国专利第4770723号或美国专利第4792368号的公开内容,\n\n将已知的铸锭粉碎,然后依次进行压制,烧结,热处理和表面加工,从而制造出尺寸为长30mm,宽20mm和高3mm的平板烧结磁体。具有14Nd-79Fe-6B-1Co(原子%)的组成(以下称为体磁体试验片)。通过以下工序在得到的块状磁铁试验片的表面上形成耐蚀膜。\n\n1:处理液的制备及其储存稳定性\n\n将各种类型的树脂添加到各种类型的碱金属硅酸盐水溶液中,并分别使用搅拌器进行混合和搅拌,以获得表1所示的15种处理液。在表1中,树脂a为F-2000(商标)。 ),无皂水乳液型丙烯酸-苯乙烯树脂(旭化成公司的热塑性树脂);树脂b是M6520(商标),添加了乳化剂的水乳液型丙烯酸-苯乙烯树脂(科莱恩的热塑性树脂\n\n聚合物(K.K.);树脂c为E1022(商标),添加了乳化剂的水乳液型环氧树脂(吉村油脂化学株式会社制树脂,是通过添加固化剂H-35(商标)而得到的热固性树脂。由同一家公司提供)。\n\n将如此获得的处理液(pH值均在11至12的范围内)分别在40°C下储存2周以研究其储存稳定性,结果也列于表1中(表1中的*) #*一般\"表示从制备时间起两周后获得良好的分散性,\"差\"表示发现在4天内产生了组分的固体沉积,并且\"非常差* #*表示在1天内发现了组分的固体沉积物。\n\n表格1\n\n处理液编号碱式硅酸盐水溶液作为基础树脂添加的处理液的稳定性类型碱式硅酸盐含量(wt%)Na含量(wt%)类型2)处理液中树脂含量(wt%)1 A 10 0.4 a 0.5公平2 A 10 0.4 a 1.0公平3 B 10 0.2 a 1.5公平4 A 10 0.4 a 2.0公平5 C 10 0 a 2.0公平6 C 5 0 a 5.0公平7 A 15 0.6 a 0.5公平8 D 10 0.9 a 1.0一般9 A 1 0.04 a 10.0一般10 A 10 0.4 b 1.0差11 A 10 0.4 b 2.0差12 A 10 0.4 b 5.0极差13 E 10 1.9 b 1.0差14 A 1 0.04 c 10.0差\n\n(继续)\n\n处理液编号碱金属硅酸盐水溶液作为基础树脂添加的处理液的稳定性类型1> 碱式硅酸盐含量(wt%)钠含量(wt%)类型2)处理液中的树脂含量(wt%)15 A 10 0.4•0中等* 1)A:硅酸锂(n = 4.5)/硅酸钠(n = 4.5) = 3)= 4/1(重量比)B:硅酸锂(n = 4.5)/硅酸钠(n * = 3)= 9/1(重量比)C:硅酸锂(n = 4.5)D:硅酸锂(n = 4.5)/硅酸钠(n = 3)= 5/4(重量比)E:硅酸钠(n = 3)* 2)a:F2000 b:M6520 c:E1022\n\n从表1可以清楚地看出,含有分散在碱金属硅酸盐水溶液中的树脂的无皂水乳液的处理液(1至9号)均显示出优异的储存稳定性,并且在储存两周后表现出优异的分散性。从处理液的制备时间开始。另一方面,含有分散于碱金属硅酸盐水溶液中的树脂的添加了乳化剂的水性乳液的处理液(No.10〜14)均显示出较差的保存稳定性。\n\n2:耐蚀膜的形成及其特性\n\n在丙酮中通过超声清洗从大块磁体测试件的表面上除去粘附的磁粉后,将测试件在制备后3小时浸入每种处理液中。然后,分别从处理液中取出大块磁体试验片,并在200℃下加热干燥20分钟,从而在各试验片的表面上形成耐蚀膜。这部电影的报道是\n\n通过控制空气擦拭的擦拭压力进行调节。\n\n如此形成的耐蚀膜的特性示于表2。在表2中,通过对在表面具有耐蚀膜的块状磁铁试验片进行120次评价,来评价耐热性和耐蚀性。加热和冷却循环的时间,即在室温(25°C)下重复120次在室温下保持1小时,然后在大气中在170°C下保持1小时,然后进行湿度测试,包括保持所得测试在80°C的高温高湿条件和90%相对湿度的条件下测量该试片,以测量直到在块状磁体试片的1%的表面上产生红锈之前所花费的时间(平均值为n = 5)。磁通量的变化是通过在具有120次加热和冷却循环以及随后的湿度测试(平均n = 5)之前和之后取变化率(退磁率)来表示的。在其表面上的耐腐蚀膜。通过将20mm×20mm大小的Cellotape(Nichiban Co.,Ltd。的注册商标)粘附到30mm×20mm大小的耐腐蚀膜表面上,并测量在其上剥离Cellotape的强度来显示粘附性。水平方向180度,以\"(刚形成耐蚀膜后的强度)/(强度\n\n在室温下将耐腐蚀膜放置2周后)\"(平均n = 5)。\n\n表2\n\n处理液编号膜的覆盖率(g / m2)膜中的树脂含量(wt%)膜中的Na含量(wt%)耐热腐蚀剂喷枪(小时)磁通量的变化(%)附着力(g / 400毫米2)评估1 0.8 4.8 3.6 1922 使用紫外线辐射器(HLR100T-1:SEN LIGHTS CORPORATION的产品)保持2分钟,并且通过使样品在室温(25℃)下静置60小时来使压力粘合部分的粘合剂固化。将以上述方式附着在夹具上的样品放置在万能试验机(株式会社岛津制作所制AUTO GRAPH AG-10TB)上,以2mm / min的剪切强度施加样品时的负荷。从夹具上取下样品,然后将其除以样品粘附平面的表面积(0.64 cm2)以获得剪切粘合强度。平均值(n = 5)用作粘合性的评价标准。\n\n胶粘剂2:\n\n除了使用改性丙烯酸酯类粘合剂(HARDLOC G55:DENKI KAGAKU KOGYO KABUSHIKI KAISHA的商标)作为粘合剂之外,以与粘合剂1相同的方式评价粘合性。在这种情况下,使用粘合剂2,通过将施加有粘合剂的样品安装在粘合剂上,从而将样品粘合到夹具上。\n\n通过在样品上施加4 kgf(39.2 N)的载荷10秒钟,并使样品在室温(25°C)下静置60小时以使粘合剂在压力下固化,来进行压力粘合粘附部分。\n\n胶粘剂3:\n\n除了使用通过混合热固性环氧基粘合剂(AV138:Ciba-Geigy Corp.的商标)和硬化剂(HV998:Ciba的商标)而获得的粘合剂3以外,以与粘合剂1相同的方式评价粘合性。 -Geigy Corp.)的体积比为5:1。在这种情况下,使用粘合剂3,通过将涂有粘合剂的样品安装在夹具的粘合面上,将样品粘合到夹具上,通过在样品上施加4 kgf(39.2 N)的载荷10秒钟进行压力粘合,通过将样品和夹具加热至100℃30分钟以使压力粘合部分中的粘合剂固化。\n\n从表3清楚地理解,根据本发明形成的耐腐蚀膜即使在长期暴露于严酷条件下也保持了优异的粘附性而没有膜的劣化。\n\n表3\n\n胶粘剂1胶粘剂2胶粘剂3在成型膜上215220380湿度测试后210210380 *)单位:kg / cm2 n = 5 *)因粘接剂凝结而部分断裂\n\n工业适用性\n\n本发明提供了一种基于稀土金属的\n\n一种永磁体,在表面上具有廉价的耐腐蚀膜,其结合了5种优异的耐热性和优异的粘合性,并提供了一种生产永磁体的方法。\n\nwo 03/03?40*\n\n图。 1个\n\n抗体\n\n配体\n\n20公里£G °0\n\n20公里G\"°\n\nNX31838\n\n40公里G\n\n(VHGHigand)\n\nr3’3’-dT\n\ns0BsWv ^EETlRUl£M’');
INSERT INTO `os_patent_instruction_text` VALUES (12968, 22797, '【0001】耐食性被膜を有する希土類系永久磁石、 その製造方法および耐食性被膜形成処理 液 技術分野\n\n【0002】本発明は、 優れた耐熱性と接着性を兼ね備えた安価な耐食性被膜を表面に有す る希土類系永久磁石、 その製造方法および耐食性被膜形成処理液に関する。 背景技術\n\n【0003】N d _ F e— B系永久磁石に代表される R— F e—B系永久磁石や S m— F e 一 N系永久磁石に代表される R— F e— N系永久磁石などの希土類系永久磁石は、 資源的に豊富で安価な材料が用いられ、 つ、 高い磁気特性を有していることか ら、 特に R— F e— B系永久磁石は今日様々な分野で使用されている。\n\n【0004】しかしながら、 希土類系永久磁石は反応性の高い希土類金属： Rを含むため、 大気中で酸化腐食されやすく、 何の表面処理をも行わずに使用した場合には、 わ ずかな酸やアルカリや水分などの存在によって表面から腐食が進行して鲭が発生 し、 それに伴って、 磁石特性の劣化やばらつきを招く。 さらに、 鲭が発生した磁 石を磁気回路などの装置に組み込んだ場合、 鯖が飛散して周辺部品を汚染する恐 れがある。\n\n【0005】従つて、 希土類系永久磁石表面に各種の耐食性被膜を形成することが古くから 行われている。\n\n【0006】ところで、 今日における希土類系永久磁石の適用範囲の拡大に伴って、 その表 面に形成される耐食性被膜については高い耐食性は勿論のこと、 温度変化の激し い使用環境下での耐熱性、 部品組み込み時に使用される接着剤をはじめとする有 機樹脂との接着性などについても優れた性能が要求されている。 しかも形成され る耐食性被膜は安価であることが望ましい。\n\n【0007】そこで本発明は、 優れた耐熱性と接着性を兼ね備えた安価な耐食性被膜を表面 に有する希土類系永久磁石、 その製造方法および耐食性被膜形成処理液を提供す\n\nることを目的とする。 発明の開示\n\n【0008】本発明者らは上記の点に鑑み、 種々の検討を行う過程において、 希土類系永久 磁石表面に耐食性被膜としてアル力リ珪酸塩を構成成分とするガラス状保護被膜 を形成する方法に着目した。 アルカリ珪酸塩を構成成分とする被膜は古くから知 られている耐食性被膜の一つであり、 安価で形成することができるという点にお いて上記の要求を満たすことのできる被膜となりうるが、 本発明者らの検討によ り、 この被膜は耐食性をはじめとする各種性能の点において満足すべきものでは なく、 さらなる性能向上が必要であることがわかった。 また、 近年、 ガラス状保 護被膜の性能向上を目的として種々の改良が検討されており、 例えば、 米国特許 第 6 1 7 4 6 0 9号においては 3重量％ 1 0重量％のアルカリ珪酸塩と 9 0重 量％〜9 7重量％の熱硬化性樹脂を構成成分とする耐食性被膜が提案され、 この ような構成とすることで、 より高い耐食性を発揮させることに成功しているが、 この被膜においても、 耐熱性と接着性の点において必ずしも満足すべき性能を有 していないことがわかった。\n\n【0009】そこで更なる検討を行った結果、 珪酸リチウムを構成成分とする被膜中に所定 量の熱可塑性樹脂を均一分散させることで、 珪酸リチウムと熱可塑性樹脂とが相 俟つて均質な三次元的ネットワーク構造を形成し、 温度変化の激しい使用環境下 においても被膜の熱収縮による被膜自体の割れの発生や被膜と素材磁石との熱膨 張率の違いによる割れの発生が効果的に防止される耐熱性に優れた耐食性被膜が 得られること、 また、 各種接着剤との接着性に優れるとともに、 接着性の劣化が 起りにくい耐食性被膜が得られることを見出した。\n\n【0010】本発明は以上のような研究過程を経て完成されたものであり、 本発明の希土類 系永久磁石は、 請求の範囲第 1項記載の通り、 珪酸リチウムと熱可塑性榭脂を構 成成分とする耐食性被膜であって、 該被膜中に熱可塑性樹脂が 0 . 1重量％〜5 0重量％の含量で均一分散した被膜を表面に有することを特徴とする。\n\n【0011】また、 請求の範囲第 2項記載の希土類系永久磁石は、 請求の範囲第 1項記載の 希土類系永久磁石において、 更に珪酸ナ卜リゥムを被膜の構成成分とすることを\n\n特徴とする。\n\n【0012】また、 請求の範囲第 3項記載の希土類系永久磁石は、 請求の範囲第 2項記載の 希土類系永久磁石において、 被膜中におけるナトリウム含量が 1 0重量％以下で あることを特徴とする。\n\n【0013】また、 請求の範囲第 4項記載の希土類系永久磁石は、 請求の範囲第 1項記載の 希土類系永久磁石において、 熱可塑性樹脂がソープフリー水溶性ェマルジョン樹 脂であることを特徴とする。\n\n【0014】また、 請求の範囲第 5項記載の希土類系永久磁石は、 請求の範囲第 1項記載の 希土類系永久磁石において、 熱可塑性樹脂がァクリルスチレン樹脂であることを 特徴とする。\n\n【0015】また、 請求の範囲第 6項記載の希土類系永久磁石は、 請求の範囲第 1項記載の 希土類系永久磁石において、 磁石単位表面積当たりの被膜付着量が 0. O l g/ m2〜5 . 0 g/m2であることを特徴とする。\n\n【0016】また、 本発明の希土類系永久磁石の製造方法は、 請求の範囲第 7項記載の通り、 熱可塑性樹脂のソープフリ一水溶性ェマルジヨン樹脂を珪酸リチウム水溶液に分 散させて、 熱可塑性樹脂を 0 . 1重量％〜5重量％、 珪酸リチウムを 2重量％〜 3 0重量％含む処理液を調製し、 この処理液を磁石表面に塗装した後、 加熱乾燥 することにより而ナ食性被膜とすることを特徴とする。\n\n【0017】また、 請求の範囲第 8項記載の製造方法は、 請求の範囲第 7項記載の製造方法 において、 処理液中に更に珪酸ナトリウムを含むことを特徴とする。\n\n【0018】また、 請求の範囲第 9項記載の製造方法は、 請求の範囲第 8項記載の製造方法 において、 処理液中におけるナトリウム含量が 1重量％以下であることを特徴と する。\n\n【0019】また、 請求の範囲第 1 0項記載の製造方法は、 請求の範囲第 7項記載の製造方 法において、 熱可塑性樹脂がアクリルスチレン樹脂であることを特徴とする。 また、 本発明の希土類系永久磁石表面への耐食性被膜形成処理液は、 請求の範 囲第 1 1項記載の通り、 熱可塑性樹脂をソープフリー水溶性ェマルジヨン樹脂と して 0 . 1重量％〜5重量％、 珪酸リチウムを 2重量％〜3 0重量％含むことを 特徴とする。\n\nまた、 請求の範囲第 1 2項記載の処理液は、 請求の範囲第 1 1項記載の処理液 において、 処理液中に更に珪酸ナトリウムを含むことを特徴とする。\n\n【0020】また、 請求の範囲第 1 3項記載の処理液は、 請求の範囲第 1 2項記載の処理液 において、 処理液中におけるナトリウム含量が 1重量％以下であることを特徴と する。\n\n【0021】また、 請求の範囲第 1 4項記載の処理液は、 請求の範囲第 1 1項記載の処理液 において、 熱可塑性樹脂がアクリルスチレン樹脂であることを特徴とする。 発明を実施するための最良の形態\n\n【0022】本発明の希土類系永久磁石は、 \'珪酸リチウムと熱可塑性樹脂を構成成分とする 耐食性被膜であって、 該被膜中に熱可塑性樹脂が 0 . 1重量％〜5 0重量％の含 量で均一分散した被膜を表面に有することを特徴とするものである。\n\n【0023】本発明における耐食性被膜は、 構成成分の一つとして珪酸リチウムを含む。 珪 酸リチウムを構成成分とする被膜は、 一般式： L i20 · n S i 02で表される 珪酸リチウムの水溶液から形成されるものであり、 耐食性に優れるという特性を 本質的に有する。 前記一般式中における nはモル比 ( S i〇ノ L i20) を意 味し、 本発明においては、 通常、 nが 1 . 5〜1 0の範囲にあるものが使用され る。\n\n【0024】本発明における耐食性被膜は、 アル力リ珪酸塩として珪酸リチウムのみを構成 成分とするものであってもよいが、 珪酸リチウムに加えて更に珪酸ナトリゥム (水ガラス） ゃ珪酸カリウムゃ珪酸アンモニゥムなどを構成成分とするものであ つてもよい。 中でも珪酸ナトリウムを被膜の構成成分とすることで、 被膜形成時 の良好な造膜性および磁石との強固な密着性を確保することが可能となる。 また、 珪酸ナトリゥムを被膜の構成成分とすれば、 被膜に外傷ゃクラックなどが存在し ていても、 珪酸ナトリウムが水にわずかに溶解して当該部分に浸透固化し、 自己 修復的耐食作用を発揮する。 珪酸ナトリウムを被膜の構成成分とする場合、 被膜 中のその含量はナトリウム含量として 1 0重量％以下にすることが望ましく、 5 重量％以下にすることがより望ましい。 1 0重量％を越えると形成される被膜の 耐水性に悪影響を及ぼすことがあり、 これに起因して耐熱性と接着性の劣化を招\n\nく恐れがあるからである。\n\n【0025】本発明における耐食性被膜の構成成分たる熱可塑性樹脂としては、 例えば、 ァ クリル樹脂、 アクリルスチレン樹脂、 ポリエステル樹脂、 ポリアミド樹脂、 ポリ カーボネート樹脂などが挙げられる。 熱可塑性樹脂は被膜中に 0 . 1重量％〜5 0重量％の含量で均一分散される。 0 . 1重量％未満であると形成された被膜に おいて優れた接着性や耐熱性が発揮されないからである。 一方、 5 0重量％を越 えると高温時に樹脂が表面凝集を起してしまい、 耐熱性の劣化を招くとともに、 接着剤の種類によっては接着性にも影響を及ぼすことがあるからである。 被膜中 に均一分散される熱可塑性樹脂の含量は、 望ましくは 1重量％〜3 0重量％であ り、 より望ましくは 5重量％〜2 0重量％である。\n\n【0026】本発明における耐食性被膜は、 珪酸リチウム水溶液に熱可塑性樹脂を分散させ た処理液を調製し、 この処理液を磁石表面にスプレー塗装したり、 処理液中に磁 石を浸漬して浸漬塗装を行った後、 例えば、 6 0 °C〜3 0 O t:の温度条件下で 1 分間〜 1 2 0分間加熱乾燥させることにより形成する。 磁石表面に優れた性能を 有する耐食性被膜を形成するためには、 処理液中において熱可塑性樹脂を均一分 散させることが ffF要である。 また、 大量生産を念頭に置いた場合、 調製される処 理液は保存安定性に優れ、 液寿命 （ポットライフ） が長いことが理想である。 以 上の点に鑑みれば、 珪酸リチウム水溶液に分散させる熱可塑性樹脂は、 乳化剤 (界面活性剤） が添加されていないソープフリ一水溶性ェマルジョン榭脂が望ま しい。 アルカリ珪酸塩水溶液はアルカリ性を呈するので （p H 1 0〜p H 1 3 ： このような p Hは磁石腐食の問題を生じさせることがなく作業環境上の面におい ても望ましい）、 熱可塑性樹脂を乳化剤 （特にノニオン系界面活性剤） が添加さ れた水溶性ェマルジョン樹脂として分散させた場合、 液中においてェマルジョン 破壊が生じて樹脂のゲル化が起ることが多いため、 熱可塑性樹脂が均一分散した 処理液を調製することが困難となり、 その結果、 優れた性能を有する耐食性被膜 を形成することができなくなる恐れがあるからである。 また、 このような処理液 は当然のことながら以上のような現象に起因して液寿命の点においても劣るから である。\n\n【0027】本発明者らの検討によれば、 熱可塑性樹脂としてアクリルスチレン 脂をソ一\n\nプフリ一水溶性ェマルジョン樹脂として珪酸リチウム水溶液に分散させて調製し た処理液は、 処理液中におけるァクリルスチレン樹脂の均一分散性に優れるよう である。 従って、 この処理液を使用して形成された耐食性被膜は、 被膜中におい てアクリルスチレン樹脂が均一分散し、 優れた耐熱性や接着性を発揮する。 なお、 アクリルスチレン樹脂とは、 スチレンモノマーとアクリル酸エステルモノマーを 重合することにより得られる樹脂を意味する。 スチレンモノマ一としてはスチレ ンゃ 0；—メチルスチレンなどが使用され得る。 ァクリル酸エステルモノマ一とし ては、 アクリル酸メチル、 アクリル酸ェチル、 アクリル酸プロピル、 アクリル酸 プチル、 アクリル酸 2—ェチルへキシル、 メタクリル酸メチル、 メタクリル酸ェ チル、 メ夕クリル酸プロピル、 メ夕クリル酸ブチル、 メタクリル酸 2—ェチルへ キシルなどが試用され得る。 好適なアクリルスチレン樹脂としては、 スチレン— メタクリル酸メチル共重合体、 スチレン一アクリル酸ブチル共重合体、 スチレン —メタクリル酸メチル一ァクリル酸ブチル共重合体、 スチレンーメタクリル酸ブ チルなどがある。 ソープフリー水溶性ェマルジョンタイプのァクリルスチレン樹 脂としては、 例えば、 旭化成工業社製の商品名： F— 2 0 0 0が好適に使用され る。\n\n【0028】優れた性能を有する耐食性被膜を形成するための好適な処理液としては、 熱可 塑性樹脂をソープフリ一水溶性ェマルジョン樹脂として 0 . 1重量％〜 5重量％、 望ましくは 0 . 5重量％〜3重量％含み、 珪酸リチウムを 2重量％〜3 0重量％ 含む処理液が挙げられ、 この組成範囲内で被膜中に均一分散させる熱可塑性樹脂 が所望含量となるように適宜調整することが望ましい。 なお、 アルカリ珪酸塩と して更に珪酸ナトリゥムを処理液中に含ませる場合は、 処理液中におけるナトリ ゥム含量が 1重量％以下となるようにすることが望ましい。\n\n【0029】本発明における耐食性被膜は磁石単位表面積当たりの被膜付着量が 0 . 0 1 g Zm2以上 （膜厚にして 1 5 nm程度以上） となるように形成することが望まし い。 0 . 0 1 g Zm2よりも少ないと耐食性被膜としての性能を十分に発揮でき ない恐れがあるからである。 なお、 被膜付着量の上限は特段限定されるものでは ないが、 被膜付着量が多すぎると磁石表面全体に対する均一付着性の確保が困難 になり、 接着剤をはじめとする有機樹脂との接着性に悪影響を及ぼす恐れがある。\n\n従って、 以上の観点からは被膜付着量の上限は 5. 0 gZm2とすることが望ま しい。\n\n【0030】本発明に適用される希土類系永久磁石としては、 例えば、 R— Fe_B系永久 磁石や R— F e—N系永久磁石などの公知の希土類系永久磁石が挙げられる。 中 でも、 R— Fe— B系永久磁石は、 前述のように、 磁気特性が高く、 量産性や経 済性に優れている上に、 被膜との優れた密着性を有する点において望ましいもの である。 これらの希土類系永久磁石における希土類元素 （R) は、 Nd、 P r、 Dy、 Ho、 Tb、 Smのうち少なくとも 1種、 あるいはさらに、 La、 Ce、 Gd、 Er、 Eu、 Tm、 Yb、 Lu、 Yのうち少なくとも 1種を含むものが望 ましい。\n\n【0031】また、 通常は Rのうち 1種をもって足りるが、 実用上は 2種以上の混合物 （ミ ッシュメタルゃジジムなど） を入手上の便宜などの理由によつて使用することも できる。\n\n【0032】さらに、 Al、 T i、 V、 C r、 Mn、 B i、 Nb、 Ta、 Mo、 W、 Sb、 Ge、 Sn、 Z r、 N i、 S i、 Zn、 Hf、 G aのうち少なくとも 1種を添加 することで、 保磁力ゃ減磁曲線の角型性の改善、 製造性の改善、 低価格化を図る ことが可能となる。 また、 F eの一部を Coで置換することによって、 得られる 磁石の磁気特性を損なうことなしに温度特性を改善することができる。\n\n【0033】なお、 本発明に適用される希土類系永久磁石は、 焼結磁石であってもポンド磁 石であってもよい。\n\n【0034】本発明の耐食性被膜の表面に、 更に別の被膜を積層形成してもよい。 このよう な構成を採用することによって、 耐食性被膜の特性を増強 \'補完したり、 更なる 機能性を付与したりすることができる。 実施例\n\n【0035】本発明を以下の実施例によってさらに詳細に説明するが、 本発明はこれに限定 されるものではない。\n\n【0036】実施例 A：\n\n【0037】例えば、 米国特許 4770723号公報や米国特許 4792368号公報に記\n\n載されているようにして、 公知の铸造インゴットを粉碎し、 微粉碎後に成形、 焼 結、 熱処理、 表面加工を行うことによって得られた 14Nd— 79Fe— 6B— I Co組成 （a t %) の縦 3 OmmX横 2 OmmX高さ 3mm寸法の平板状焼 結磁石 （以下、 磁石体試験片と称する） の表面に耐食性被膜を以下のようにして 形成した。\n\n【0038】1 ：処理液の調製とその保存安定性\n\n【0039】各種のアル力リ珪酸塩水溶液に各種の樹脂を添加し、 スターラーにて混合攪拌 することにより表 1に示す 15種類の処理液を調製した。 なお、 表 1における樹 脂 aである F— 2000 (商品名） はソ一プフリー水溶性ェマルジヨンタイプの アクリルスチレン樹脂 （旭化成工業社製の熱可塑性樹脂） であり、 樹脂 bである M6520 (商品名） は乳化剤添加型の水溶性ェマルジヨンタイプのアクリルス チレン樹脂 （クラリアントポリマ一社製の熱可塑性樹脂） であり、 樹脂 cである E 1022 (商品名） は乳化剤添加型の水溶性ェマルジヨンタイプのエポキシ樹 脂 （吉村油化学社製の樹脂であり同社製の硬化剤 H— 35 (商品名） とともに添 加して熱硬化性樹脂とするもの） である。\n\n【0040】得られた処理液 （その pHはいずれも 11〜12) を 40°Cにて 2週間保存す ることにより、 その保存安定性を調べた結果を表 1に併せて示す （表 1中、 〇は 2週間後も分散良好であることを意味し、 Xは調製後 4日以内に成分の沈降固 化が生じることを意味し、 X Xは調製後 1日以内に成分の沈降固化が生じるこ とを意味する）。\n\n【0041】へ\'-スとなるアル 珪酸塩水溶液 添加した樹脂 処理液 No\n\n【0042】Na含量 処理液安定性 アルカリ珪酸塩含量 処理液中樹脂含量 種類 植類\n\n【0043】(重量 %) (重量 %) (重量 %)\n\n【0044】1 A 10 0.4 a 0.5 〇\n\n【0045】2 A 10 0.4 a 1.0 〇\n\n【0046】3 B 10 0.2 a 1.5 〇\n\n【0047】4 A 10 0.4 a 2.0 〇\n\n【0048】5 C 10 0 a 2.0 〇\n\n【0049】6 C 5 0 a 5.0 〇\n\n【0050】7 A 15 0.6 a 0.5 〇\n\n【0051】8 D 10 0.9 a 1.0 〇\n\n【0052】9 A 1 0.04 a 10.0 〇\n\n【0053】10 A 10 0.4 b 1.0 X\n\n【0054】11 A 10 0.4 b 2.0 X\n\n【0055】12 A 10 0.4 b 5.0 X X\n\n【0056】13 E 10 1.9 b 1.0 X\n\n【0057】14 A 1 0.04 c 10.0 X\n\n【0058】15 A 10 0.4 0 〇\n\n【0059】*1 ) *2)\n\n【0060】A:珪酸リチウム (n=4.5)/珪酸ナトリウム (n=3)=4/1(重量比） F2000\n\n【0061】B :珪酸リチウム (n=4.5)/珪酸ナトリウム (n=3)=9/1(重量比） M6520\n\n【0062】C :珪酸リチウム (n=4.5) E1022\n\n【0063】D :珪酸リチウム (n=4.5)/珪酸ナトリウム (n=3)=5/4(重量比）\n\n【0064】E:珪酸ナトリウム (n=3) 表 1から明らかなように、 ソ一プフリー水溶性ェマルジョン樹 をアルカリ珪 酸塩水溶液に分散させた処理液 （N o . 1〜9 ) は、 そのいずれもが保存安定性 に優れており、 処理液調製から 2週間保存後も優れた分散性を示した。 一方、 乳 化剤添加型の水溶性ェマルジョン樹脂をアル力リ珪酸塩水溶液に分散させた処理 液 （N o . 1 0〜1 4 ) は、 そのいずれもが保存安定性に劣っていた。\n\n【0065】2 ：耐食性被膜の形成とその特性\n\n【0066】ァセトンで超音波洗浄することにより表面に付着している磁性粉を除去した磁 石体試験片を、 調製してから 3時間経過後の各処理液中に浸漬した。 その後、 磁 石体試験片を処理液中から引き上げて 2 0 O で 2 0分間加熱乾燥して磁石体試\n\n験片表面に耐食性被膜を形成した。 なお、 被膜付着量はエアワイビングのワイピ ング圧を調整することにより調整した。\n\n【0067】以上の方法で形成された耐食性被膜の特性について表 2に示す。 なお、 表 2に おいて、 耐熱耐食性は、 大気中にて 1時間毎に室温 （2 5 °C) 雰囲気下と 1 7 0 °C雰囲気下に存置するという加熱冷却サイクルを 1 2 0回行った耐食性被膜を 表面に有する磁石体試験片に対し、 温度 8 0 °C X相対湿度 9 0 %の高温高湿条 件下に存置するという湿潤試験を行い、 赤鯖の磁石体試験片表面積における発生 率が 1 %になるまでの時間で示した （n = 5の平均値）。 また、 磁束変化は上記 の 1 2 0回の加熱冷却サイクルとそれに続く湿潤試験を行う前後における耐食性 被膜を表面に有する磁石体試験片の磁束の変化率 （減磁率） で示した （n = 5の 平均値）。 また、 接着性は 2 O mmX 2 0 mmのセロテープ （ニチバン社製の登 録商標） を 3 O mm X 2 0 mmの面の耐食性被膜に貼付し、 1 8 0度水平方向 へ引っ張った際の強度について、 「被膜形成直後の強度 Z被膜形成から 2週間室 内放置後の強度」 で示した （n == 5の平均値）。 表 2 処理液 No 被膜付着量 被膜中樹脂含量 被膜中 Na含量 耐熱耐食性 磁束変化 接着性 判定\n\n【0068】(g/m2) (重量 %) (重量 %) (時間） (%) (g/400mm2)\n\n【0069】1 0.8 4.8 3.6 192 【0070】2 0.8 9.1 3.5 192 【0071】3 0.8 13.0 1.8 216 く 1 380/370 実施例\n\n【0072】4 0.8 16.7 3.2 216 【0073】5 0.8 16.7 【0074】6 3.0 50.0 0 192 ぐ 1 380/350 実施例\n\n【0075】7 1.5 3.2 4.0 216 【0076】8 0.8 9.1 8.2 192 ぐ 1 370/350 実施例\n\n【0077】9 0.8 90.0 0.3 96 2 350/300 比較例\n\n【0078】10 0.8 9.1 1.7 96 2 350/240 比較例\n\n【0079】11 0.8 16.7 1.6 96 2 330/250 比較例\n\n【0080】12 0.8 33.3 1.3 72 2 300/200 比較例\n\n【0081】13 0.8 9.1 17.3 96 2 330/150 比較例\n\n【0082】14 0.8 90.0 0.3 144 2 330/320 比較例\n\n【0083】15 0.8 0 3.8 144 ぐ 1 370/300 比較例\n\n表 2から明らかなように、 熱可塑性樹脂をソープフリー水溶性ェマルジョン樹 脂としてアル力リ珪酸塩水溶液に分散させて調製された処理液から形成される被 膜であって、 該被膜中の熱可塑性樹脂が 50重量％以下の含量で均一分散した被 膜であれば優れた耐食性を示すことがわかった。\n\n【0084】実施例 B：\n\n【0085】例えば、 米国特許 4770723号公報や米国特許 4792368号公報に記 載されているようにして、 公知の錶造インゴットを粉砕し、 微粉砕後に成形、 焼 結、 熱処理、 表面加工を行うことによって得られた 14Nd— 79 Fe— 6 B— I Co組成 （a t %) の直径 9 mm X高さ 3 mm寸法の円柱状焼結磁石 （以下、 磁石体試験片と称する） の表面に実施例 Aにおける処理液 4を使用し、 実施例 A と同様にして耐食性被膜を形成した。\n\n【0086】形成された耐食性被膜について、 被膜形成直後と温度 80°CX相対湿度 9 0%の高温高湿条件下に 100時間存置するという湿潤試験を行った後の各種接 着剤との接着性を以下のようにして調べた。\n\n【0087】接着剤 1 ：\n\n【0088】接着面を J I S R 6001規定の # 100の砥粒を有するダイヤモンド砥石 を用いて研磨した铸鉄 （S 45 C) 製の 4 OmmX 5 OmmX 6 Omm寸法の 治具にサンプルを次のようにして接着した。 即ち、 サンプルと治具の両方の接着 面にプライマー （プライマ一 7649 ：ヘンケルジャパン社製の商品名） を塗布 した。 プライマ一中の溶媒を乾燥除去した後、 接着面に嫌気性紫外線硬化型接着 剤 （ロックタイト 366 ：ヘンケルジャパン社製の商品名） を塗布したサンプル を治具の接着面の上に載置し、 サンプルの上から 4kg f (39. 2N) の加重 を 10秒間かけて両者を圧着した。 なお、 サンプルの接着面への接着剤の塗布は 圧着時に圧着部分周囲から接着剤がはみ出る程度にまで行った。 圧着部分周囲か らはみ出た接着剤を紫外線照射機 (HLR100T-1 ：セン特殊光源社製） を 使用し、 365 n mにおける紫外線強度が 100 mWZ cm2の条件下で 2分間 処理して硬化させた後、 室温 （25°C) にて 60時間放置することにより圧着部\n\n分の接着剤を硬化させた。 以上のようにして治具に接着させたサンプルを万能試 験機 （AUTO GRAPH AG— 10 TB：島津製作所社製） にセットし、 せん断強度 2 mm/分の条件下にてサンプルが治具から脱離する時の加重を測定 し、 サンプルの接着面の表面積 （0. 64 cm2) で除するせん断接着強度を求 め、 この平均値 （n=5) を接着性の評価基準とした。\n\n【0089】接着剤 2 ：\n\n【0090】接着剤として変性ァクリレート系接着剤 （ハードロック G55 ：電気化学工業 社製の商品名） を使用し、 接着剤 1の場合と同様の方法で接着性の評価を行った。 なお、 接着剤 2においては、 治具へのサンプルの接着は、 接着剤を塗布したサン プルを治具の接着面の上に載置し、 サンプルの上から 4kg f (39. 2N) の 加重を 10秒間かけて両者を圧着し、 室温 (25°C) にて 60時間放置すること により圧着部分の接着剤を硬化させることによって行った。\n\n【0091】接着剤 3 ：\n\n【0092】熱硬化性エポキシ系接着剤 （AV138 ：チバガイギ一社製の商品名） と硬化 剤 （HV998 ：チバガイギ一社製の商品名） を容積比にして 5 ： 1の割合で混 合して接着剤 3とし、 接着剤 1の場合と同様の方法で接着性の評価を行った。 な お、 接着剤 3においては、 治具へのサンプルの接着は、 接着剤を塗布したサンプ ルを治具の接着面の上に載置し、 サンプルの上から 4kg f (39. 2N) の加 重を 10秒間かけて両者を圧着し、 100°Cにて 30分間加熱することにより圧 着部分の接着剤を硬 させることによって行った。\n\n【0093】以下に示す表 3から明らかなように、 本発明において形成される耐食性被膜は 長期間過酷条件下に曝された場合でも被膜劣化がほとんど起らず、 優れた接着性 を維持していた。\n\n表 3\n\n【0095】単位： kg/cm\n\n【0096】*)接着剤の凝集破壊が-部あり\n\n【0097】産業上の利用可能性\n\n【0098】本発明によれば、 優れた耐熱性と接着性を兼ね備えた安価な耐食性被膜を表面 に有する希土類系永久磁石、 その製造方法および耐食性被膜形成処理液\'が提供さ れる。', '【0001】具有耐腐蚀涂层的稀土永磁体，其制造方法和耐腐蚀涂层形成液技术领域\n\n  稀土类永磁体技术领域本发明涉及一种稀土类永磁体，该稀土类永磁体的表面具有耐热性和密合性优异的廉价的耐腐蚀涂层，其制造方法以及形成耐腐蚀涂层的处理液。 背景技术\n\n  【0003】以R f-B系统永磁体为代表的N d _ F e-B系统永磁体，以RF e-N系统永磁体为代表的S m-F e 1 N系统永磁体 诸如磁铁之类的稀土永磁体由丰富的资源和廉价的材料制成，并且具有高的磁性。 用于。\n\n  【0004】然而，由于稀土类永磁体包含高反应性稀土金属：R，因此在大气中容易被氧化腐蚀，并且在未经任何表面处理的情况下使用时，会产生少量酸。 由于碱，湿气等的存在，腐蚀从表面开始，导致焊料的产生，这导致磁体特性的劣化和分散。 此外，如果将引起氧化铁的磁铁矿结合到诸如磁路的装置中，则鲭鱼会散布并污染周边部分。\n\n  【0005】因此，长期以来在稀土永磁体的表面上已经形成了各种耐腐蚀涂层。\n\n  【0006】顺便说一下，随着当今稀土基永磁体的应用范围的扩大，在表面上形成的耐腐蚀涂层不仅具有高的耐腐蚀性，而且具有温度急剧变化的环境。 就耐热性和对有机树脂（例如在组装部件时使用的粘合剂）的粘合性而言，还需要优异的性能。 此外，期望形成的耐腐蚀涂层便宜。\n\n  【0007】因此，本发明提供了一种稀土类永磁体，其表面具有优异的耐热性和密合性的廉价的耐蚀涂层，其制造方法以及用于形成耐蚀涂层的处理液。\n\n 要做的事。 发明内容\n\n  鉴于以上几点，本发明人在进行各种研究的过程中，提出了在稀土永磁体的表面上形成包含碱性硅酸盐作为构成成分的玻璃状保护被膜作为耐腐蚀被膜的方法。 我专注于。 包含碱金属硅酸盐作为构成成分的涂层是长期以来已知的耐腐蚀涂层之一，并且其可以是可以以低成本形成的，可以满足上述要求的涂层。 根据发明人的研究，发现该涂层在诸如耐腐蚀性等各种性能方面都不令人满意，并且需要进一步的性能改进。 另外，近年来，为了提高玻璃状保护涂层的性能，进行了各种改良研究，例如在美国专利第6,174,609号中，使用了3重量％〜10重量％的碱金属硅酸盐。 并且，提出了以90重量％〜90重量％的热固性树脂为构成成分的耐蚀涂层，通过这种结构，成功地表现出更高的耐蚀性。 发现该涂层在耐热性和粘合性方面也不一定具有令人满意的性能。\n\n  【0009】因此，作为进一步研究的结果，通过将预定量的热塑性树脂均匀地分散在以硅酸锂作为构成成分的涂膜中，使硅酸锂和热塑性树脂结合而形成均质的三级结构。 形成原始的网络结构，即使在温度急剧变化的使用环境中，也可以有效地防止由于涂层的热收缩而引起的涂层本身的开裂和由于涂层与材料磁体之间的热膨胀系数差异而导致的开裂。 发现可以得到具有优异耐热性的耐腐蚀涂层，并且可以得到与各种粘合剂的粘合性优异并且不易劣化粘合性的耐腐蚀涂层。\n\n  【0010】通过以上研究过程完成了本发明，本发明的稀土金属基永磁体包括硅酸锂和权利要求1所述的热塑性树脂。 作为成分的耐腐蚀涂层，其特征在于，其具有在其表面上以0.1重量％至50重量％的含量均匀地分散有热塑性树脂的涂层。\n\n  【0011】根据权利要求2的稀土基永磁体是根据权利要求1的稀土基永磁体，还包含硅酸钠作为涂层的组成成分。\n\n 表征。\n\n  【0012】此外，根据权利要求3的稀土基永磁体是根据权利要求2的稀土基永磁体，其特征在于，涂层中钠的含量为10重量％以下。 和\n\n  【0013】此外，根据权利要求4的稀土永磁体是根据权利要求1的稀土永磁体，其特征在于，所述热塑性树脂是无皂的水溶性乳液树脂。 和\n\n  【0014】此外，根据权利要求5的稀土类永磁体是根据权利要求1所述的稀土类永磁体，其特征在于，所述热塑性树脂是丙烯酸酯树脂。\n\n  【0015】此外，根据权利要求6的稀土基永磁体是根据权利要求1所述的稀土基永磁体，其中，所述磁体的每单位表面积的涂覆量为0O lg / m2至5.0 g / m2。\n\n  【0016】此外，如权利要求7所述，本发明的稀土类永磁体的制造方法是将无热塑性树脂皂的水溶性乳液树脂分散在硅酸锂水溶液中以获得热塑性树脂。 制备包含0.1重量％至5重量％的树脂和2重量％至30重量％的硅酸锂的处理液，并将该处理液施加至磁体的表面，然后通过加热干燥以形成耐腐蚀涂层。 它的特点是\n\n  【0017】此外，根据权利要求8所述的制造方法，其特征在于，在根据权利要求7所述的制造方法中，所述处理液还包含硅酸钠。\n\n  【0018】此外，根据权利要求9所述的制造方法，其特征在于，在根据权利要求8所述的制造方法中，所述处理液中的钠含量为1重量％以下。\n\n  另外，技术方案10所述的制造方法的特征在于，技术方案7所述的制造方法中，热塑性树脂为丙烯酸苯乙烯系树脂。 此外，如权利要求11所述，用于在本发明的稀土类永磁体的表面上形成耐蚀涂层的处理液是0.1重量％以上的作为无皂的水溶性乳液树脂的热塑性树脂。 其特征在于含有5重量％和2重量％至30重量％的硅酸锂。\n\n 权利要求12所述的处理液是根据权利要求11所述的处理液，其特征在于，所述处理液还含有硅酸钠。\n\n  【0020】此外，根据权利要求13所述的处理液，其特征在于，在根据权利要求12所述的处理液中，所述处理液中的钠含量为1重量％以下。  。\n\n  【0021】此外，根据权利要求14的处理液的特征在于，在根据权利要求11的处理液中，热塑性树脂是丙烯酸苯乙烯树脂。 实施本发明的最佳模式\n\n  【0022】本发明的稀土类永磁体是包含硅酸锂和热塑性树脂作为构成成分的耐腐蚀涂层，其中热塑性树脂的含量为0.1重量％至50重量％。 其特征在于使涂膜均匀地分散在内容物中。\n\n  【0023】本发明中的耐腐蚀涂层包含硅酸锂作为构成成分之一。 包含硅酸锂作为构成成分的涂膜由通式为Li20·n S i 02的硅酸锂的水溶液形成，具有优异的耐腐蚀性。 它具有固有的特性。 在上述通式中，n表示摩尔比（S i〇LiL i20），在本发明中，通常使用1.5〜10的范围内的n。 它\n\n  【0024】本发明中的耐腐蚀涂层可以仅具有硅酸锂作为碱性硅酸盐的组成成分，但是除了硅酸锂之外，可以进一步添加硅酸钠（水玻璃），硅酸钾和硅酸。 它可能是以铵为成分的。 最重要的是，通过使用硅酸钠作为涂层的组成成分，可以确保在成膜过程中良好的成膜性能以及对磁体的强粘附性。 另外，如果使用硅酸钠作为涂层的组成成分，即使在涂层上有刮擦或裂缝，硅酸钠也微溶于水并渗透并固化成相关部分，表现出自修复性。 去做。 当使用硅酸钠作为涂膜的成分时，其在涂膜中的含量优选为10重量％以下，更优选为5重量％以下。 如果其超过10重量％，则可能不利地影响所形成的膜的耐水性，这导致耐热性和粘合性劣化。\n\n 因为有恐惧。\n\n  在本发明中作为耐腐蚀涂层的成分的热塑性树脂的实例包括丙烯酸树脂，丙烯酸苯乙烯树脂，聚酯树脂，聚酰胺树脂和聚碳酸酯树脂。 热塑性树脂以0.1重量％至50重量％的量均匀地分散在涂层中。 这是因为如果其小于0.1重量％，则在形成的膜中将不会表现出优异的粘合性和耐热性。 另一方面，当该量超过50重量％时，树脂在高温下引起表面凝结，导致耐热性劣化，并且根据粘合剂的类型，它也可能影响粘合性。 均匀分散在涂膜中的热塑性树脂的含量优选为1重量％至30重量％，更优选为5重量％至20重量％。 \n\n【0026】对于本发明中的耐腐蚀涂层，制备通过将热塑性树脂分散在硅酸锂水溶液中而制备的处理液，并将该处理液喷涂在磁体表面上或将磁体浸没在该处理液中。 例如，浸涂后，通过在60℃至30Ot：的温度条件下加热并干燥1分钟至120分钟而形成。 为了在磁体表面上形成具有优异性能的耐腐蚀涂层，必须将热塑性树脂均匀地分散在处理液中。 此外，当考虑批量生产时，理想地，待制备的处理液具有优异的储存稳定性和长的液体寿命（适用期）。 鉴于上述观点，希望分散在硅酸锂水溶液中的热塑性树脂是不添加乳化剂（表面活性剂）的无皂水溶性乳液树脂。 由于碱性硅酸盐水溶液具有碱性（pH 10至pH 13：该pH不会引起磁体腐蚀问题，因此在工作环境方面是理想的），因此热塑性树脂 当分散为已添加了乳化剂（特别是非离子表面活性剂）的水溶性乳液树脂时，由于在液体中的乳液破坏，经常发生树脂的凝胶化，从而热塑性树脂是均匀的。 这是因为难以制备分散的处理液，结果，可能无法形成具有优异性能的耐腐蚀涂层。 这也是因为由于上述现象，这样的处理液的寿命自然较差。\n\n  根据本发明人的研究，丙烯酸苯乙烯树脂被用作热塑性树脂。\n\n 通过将其分散在作为水溶性乳液树脂的硅酸锂水溶液中而制备的处理液看起来具有优异的丙烯酸酯树脂在处理液中的均匀分散性。 因此，使用该处理液形成的耐蚀涂膜使丙烯酸苯乙烯系树脂均匀地分散在涂膜中，并具有优异的耐热性和密合性。 丙烯酸苯乙烯树脂是指通过使苯乙烯单体和丙烯酸酯单体聚合而得到的树脂。 作为苯乙烯单体，可以使用苯乙烯0；-甲基苯乙烯等。 丙烯酸酯单体包括丙烯酸甲酯，丙烯酸乙酯，丙烯酸丙酯，丙烯酸丁酯，丙烯酸2-乙酯丙烯酸酯，甲基丙烯酸甲酯，甲基丙烯酸乙酯，丙烯酸丙酯，甲基丙烯酸丙酯，甲酯。 可以使用丙烯酸丁酯，甲基丙烯酸2-乙基酯等。 合适的丙烯酸苯乙烯树脂包括苯乙烯-甲基丙烯酸甲酯共​​聚物，苯乙烯-丙烯酸丁酯共聚物，苯乙烯-甲基丙烯酸甲酯-丙烯酸丁酯共聚物，苯乙烯-甲基丙烯酸丁酯。 作为无皂水溶性乳液型丙烯酸酯树脂，例如，优选使用旭化成公司制造的商品名：F-200。\n\n  【0028】作为形成具有优异性能的耐腐蚀涂层的合适处理液，热塑性树脂是无皂的水溶性乳液树脂，其量为0.1至5重量％，优选为0.5。 包括含有2重量％至30重量％的硅酸锂和2重量％至30重量％的硅酸锂的处理液，并且将在该组成范围内均匀分散在涂层中的热塑性树脂适当地调节至期望的含量。 是可取的。 当在处理液中进一步包含硅酸钠作为碱金属硅酸盐时，期望处理液中的钠含量为1重量％以下。\n\n  【0029】希望本发明中的耐腐蚀涂层形成为使得磁体的每单位表面积的涂层附着量为0.01g Zm2以上（厚度为约15nm以上）。 不好。 这是因为如果小于0.01g Zm2，则可能无法充分发挥作为耐蚀涂层的性能。 涂布量的上限没有特别限制，但是如果涂布量过多，则难以确保对磁铁整体的均匀的密合性，并且难以对粘合剂等有机树脂进行密合。 可能会受到不利影响。\n\n 因此，从以上观点出发，期望涂布量的上限为5.0gZm2。\n\n  【0030】适用于本发明的稀土类永磁体的实例包括已知的稀土类永磁体，例如R-Fe_B类永磁体和RFe-N类永磁体。 其中，如上所述，R-Fe-B系永磁体是期望的，因为它们具有高的磁性能，优异的批量生产性和经济性以及对涂层的优异粘附性。 在那儿。 这些稀土永磁体中的稀土元素（R）为Nd，Pr，Dy，Ho，Tb，Sm中的至少一种，或者为La，Ce，Gd，Er，Eu，Tm，Yb，Lu中的至少一种。 优选含有至少一种的Y。\n\n  【0031】通常，R的一种就足够了，但实际上，为了方便使用，可以使用两种或多种的混合物（例如，稀土金属和锆鎓）。\n\n  【0032】此外，Al，Ti，V，Cr，Mn，Bi，Nb，Ta，Mo，W，Sb，Ge，Sn，Zr，Ni，Si，Zn，Hf，Ga 通过添加它们中的至少一种，可以改善矫顽力和退磁曲线的矩形度，改善可制造性，并降低成本。 而且，通过用一部分Fe代替Co，可以在不损害所获得的磁体的磁特性的情况下提高温度特性。\n\n  【0033】应用于本发明的稀土类永磁体可以是烧结磁体或池磁体。\n\n  【0034】可以在本发明的耐腐蚀涂层的表面上层压另一涂层。 通过采用这种构造，可以增强耐腐蚀涂层的性能，对其进行补充或增加其他功能。 例\n\n  【0035】将通过以下实施例更详细地描述本发明，但是本发明不限于此。\n\n  【0036】示例A：\n\n  【0037】参见，例如，美国专利第4770723号和美国专利第4792368号。\n\n 如表中所示，将已知的铸锭制成的铸锭被研磨，并且在细磨之后，对其进行成型，烘烤，热处理和表面处理，以获得14Nd-79Fe-6B-1Co组成的垂直组成（原子％）。 在尺寸为3mm×水平2mm×3mm高的平板烧结磁体（以下称为磁体试验片）的表面上形成有耐蚀涂层。\n\n  【0038】1：处理液的制备及其储存稳定性\n\n  【0039】通过向碱金属硅酸盐的各种水溶液中添加各种树脂，并用搅拌器进行搅拌来制备表1所示的15种处理液。 另外，表1中作为树脂a的F-2000（商品名）为无皂水溶性乳液型丙烯酸苯乙烯系树脂（旭化成公司制造的热塑性树脂），树脂b为M6520（  （商品名）是添加了乳化剂的水溶性乳液型丙烯酸苯乙烯系树脂（科莱恩聚合物有限公司制造的热塑性树脂），树脂c E 1022（商品名）是添加了乳化剂的水溶性 它是乳液型环氧树脂（由Yoshimura Yushi Kagaku Co.，Ltd.制造的树脂，与同一公司制造的固化剂H-35（商品名）一起添加以形成热固性树脂）。\n\n  【0040】通过将获得的处理液（每种pH为11至12）在40℃下保存2周来研究其保存稳定性（表1）。 在1中，○表示即使在2周后分散性良好，×表示成分在制备后4天内沉降固化，×表示成分在制备后1天内沉降固化。 生成）。\n\n  【0041】变成树脂处理液No.的硅酸铝水溶液。\n\n  【0042】Na含量处理溶液稳定性碱金属硅酸盐含量处理溶液中的树脂含量类型设备\n\n  【0043】（重量％）（重量％）（重量％）\n\n  【0044】1 A 10 0.4 a 0.5〇\n\n  【0045】2 A 10 0.4 a 1.0〇\n\n  【0046】3 B 10 0.2 a 1.5〇\n\n  【0047】4 A 10 0.4 a 2.0○\n\n  【0048】5 C 10 0 a 2.0〇\n\n  【0049】6 C 5 0 a 5.0〇\n\n  【0050】7 A 15 0.6 a 0.5〇\n\n  【0051】8 D 10 0.9 a 1.0〇\n\n  【0052】9 A 1 0.04一个10.0○\n\n  【0053】10 A 10 0.4 b 1.0 X\n\n  【0054】11 A 10 0.4 b 2.0 X\n\n  【0055】12 A 10 0.4 b 5.0 X X\n\n  【0056】13 E 10 1.9英寸1.0 X\n\n  【0057】14 A 1 0.04 c 10.0 X\n\n  【0058】15 A 10 0.4 0○\n\n  【0059】* 1）* 2）\n\n  【0060】A：硅酸锂（n = 4.5）/硅酸钠（n = 3）= 4/1（重量比）F2000\n\n  【0061】B：硅酸锂（n = 4.5）/硅酸钠（n = 3）= 9/1（重量比）M6520\n\n  【0062】C：硅酸锂（n = 4.5）E1022\n\n  【0063】D：硅酸锂（n = 4.5）/硅酸钠（n = 3）= 5/4（重量比）\n\n  【0064】E：硅酸钠（n ＝ 3）由表1可知，将无皂的水溶性乳液树分散在碱金属硅酸盐水溶液中的处理液（N o .1〜9）为： 它们均具有优异的保存稳定性，并且即使在制备处理溶液后保存2周后也显示出优异的分散性。 另一方面，将添加了乳化剂的水溶性乳液树脂分散在碱金属硅酸盐的水溶液中的处理液（No.10〜14）的保存稳定性差。\n\n  【0065】2：耐腐蚀涂层的形成及其特性\n\n  【0066】从制备开始经过3小时后，将磁体表面试验片浸入各处理液中，该磁体试验片通过用丙酮进行超声波清洗而去除了粘附至表面的磁性粉末。 之后，将磁体试验片从处理液中拔出，并在20 O下加热干燥20分钟以进行磁体试验。\n\n 在测试件的表面上形成了耐腐蚀涂层。 通过调节空气擦拭的擦拭压力来调节涂层的附着量。 \n\n【0067】表2示出了通过上述方法形成的耐腐蚀涂层的特性。 在表2中，通过在室温（25℃）下1小时和在空气中每1小时1700℃的加热和冷却循环来确定耐热性和耐腐蚀性。 对在其表面上具有耐腐蚀涂层的磁体测试件进行润湿测试，其中将其保持在高温和高湿条件下，温度为80℃，相对湿度为90％。 以达到1％的时间（n = 5的平均值）表示。 磁通量的变化通过在上述120次加热/冷却循环和随后的湿法试验（n = 5）之前和之后在表面上具有耐腐蚀涂层的磁体测试件的磁通量的变化率（退磁率）表示。 平均值）。 粘附力为2 O mm X 20 mm Cellotape（Nichiban Co.，Ltd。制造的注册商标）在3 O mm X 20 mm的表面上水平拉动180度时被涂在耐腐蚀涂层上。 强度表示为“成膜后Z的强度，成膜后在室内静置2周后的强度”（n ＝ 5的平均值）。 表2处理液否涂布量涂布量树脂含量涂布量Na含量耐热，耐腐蚀性磁通变化附着力判定\n\n  【0068】（g / m2）（重量％）（重量％）（小时）（％）（g / 400mm2）\n\n  【0069】1 0.8 4.8 3.6 192 【0070】2 0.8 9.1 3.5 192 【0071】3 0.8 13.0 1.8 216 1 380/370示例\n\n  【0072】4 0.8 16.7 3.2 216 【0073】5 0.8 16.7 【0074】6 3.0 50.0 0 19 2 gu 1 380/350示例\n\n  【0075】7 1.5 3.2 4.0 216 【0076】8 0.8 9.1 8.2 19 2nd 1 370/350示例\n\n  【0077】9 0.8 90.0 0.3 96 2 350/300比较示例\n\n  【0078】10 0.8 9.1 1.7 96 2 350/240比较示例\n\n  【0079】11 0.8 16.7 1.6 96 2 330/250比较示例\n\n  【0080】12 0.8 33.3 1.3 72 2 300/200比较示例\n\n  【0081】13 0.8 9.1 17.3 96 2 330/150比较示例\n\n  【0082】14 0.8 90.0 0.3 144 2 330/320比较示例\n\n  【0083】15 0.8 0 3.8 144 gu 1 370/300比较示例\n\n 从表2清楚可见，热塑性树脂用作无皂的水溶性乳液树脂，并分散在碱性硅酸盐水溶液中。 发现当膜是其中塑料树脂以50重量％以下的含量均匀分散的膜时，表现出优异的耐腐蚀性。\n\n  【0084】示例B：\n\n  【0085】例如，如美国专利第4,770,723号和美国专利第4,792,368号所述，将公知的骨架锭压碎，并且在精细粉碎之后，进行模制，烘烤，热处理和表面处理。 通过以下方法得到的直径为9 mm，高度为3 mm的圆柱形烧结磁体（以下称为磁体测试件）的表面具有14Nd- 79 Fe-6 B I Co成分（原子％） 使用实施例A中的处理液4，以与实施例A中相同的方式形成耐腐蚀涂层。\n\n  【0086】在形成涂层之后并且在80℃的高温和高湿度和90％相对湿度的条件下进行了100小时的润湿测试之后，各种耐腐蚀涂层对各种粘合剂的粘附性。 性别检查如下。\n\n  【0087】胶粘剂1：\n\n  【0088】将样品放置在由铅铁（S 45 C）制成的4 OmmX 5 OmmX 6 Omm的夹具上，其结合表面使用具有JIS R 6001规定的＃100磨粒的金刚石磨石按如下方式抛光。 并粘上。 即，将底漆（Primer 7649：Henkel Japan制造的商品名）施加至样品和夹具的粘合表面。 通过干燥除去底漆中的溶剂后，将具有厌氧性紫外线固化型胶粘剂（Loctite 366：汉高日本公司的商品名）的样品涂覆在夹具的胶粘剂表面上。 从样品上方施加4 kg f（39.2 N）的负载10秒钟，以将它们粘合在一起。 将粘合剂施加到样品的粘合剂表面上，使得粘合剂在卷曲期间从卷曲部分的外围挤出。 使用紫外线辐射器（Sen Special Light Source Co.，Ltd.制造的HLR100T-1），在365 nm处的紫外线强度为100 mWZ cm2的条件下，使用从压接部周围突出的粘合剂。 固化约1分钟并固化后，在室温（25°C）下放置60小时以粘合\n\n 分钟的粘合剂被固化。 将如上所述粘附到夹具上的样品放置在通用测试仪（AUTO GRAPH AG-10 TB：Shimadzu Corp.）上，并在2mm / min的剪切强度下将样品从夹具上移出。 测定解吸时的负荷，求出剪切粘合强度除以样品的粘合面的表面积（0.64cm2），将该平均值（n ＝ 5）作为粘合评价基准。 和\n\n  【0089】胶粘剂2：\n\n  【0090】使用改性的丙烯酸酯类粘合剂（Hard Rock G55：Denki Kagaku Kogyo制造的商品名）作为粘合剂，并且以与粘合剂1的情况相同的方式评价粘合性。 使用粘合剂2，通过将涂有粘合剂的样品放置在夹具的粘合剂表面上，并从样品顶部施加4 kgf（39.2N）的载荷，将样品连接到夹具上。 将两者压接10秒，并在室温（25℃）下放置60小时以使压接部分中的粘合剂固化。\n\n  【0091】胶粘剂3：\n\n  【0092】以5：1的体积比混合热固性环氧粘合剂（AV138：Ciba-Geigi Co.，Ltd。制造的产品名称）和固化剂（HV998：Ciba-Geigi Co.，Ltd。制造的产品名称）。 与粘合剂1相同，使用粘合剂3评价粘合性。 对于粘合剂3，通过将涂覆有粘合剂的样品放置在夹具的粘合表面上并施加4 kgf（39.2 N）的样品，将样品附着到夹具上。 施加载荷10秒以将两者粘合在一起，并且通过在100℃下加热30分钟来固化压制部分处的粘合剂。\n\n  【0093】从下面的表3中可以清楚地看出，即使长时间暴露在苛刻的条件下，本发明中形成的耐腐蚀涂层也几乎不劣化，并且保持优异的粘合性。 在那儿。\n\n 表3\n\n  【0095】单位：千克/厘米\n\n  【0096】*）粘合剂的内聚破坏为-\n\n  【0097】工业可用性\n\n  【0098】根据本发明，提供了一种稀土类永磁体，其表面上具有廉价的具有优异的耐热性和粘附性的耐腐蚀涂层，其制备方法以及耐腐蚀涂层形成处理液\'。');
INSERT INTO `os_patent_instruction_text` VALUES (12969, 22798, '【0001】\n\n【発明の属する技術分野】\n\n本発明は、希土類磁石に関し、特に、微結晶組織を有する希土類磁石に関する。\n\n【0002】\n\n【従来の技術】\n\n現在、希土類·コバルト系磁石と、希土類·鉄·ボロン系磁石の二種類が各分野で広く用いられている。なかでも、希土類·鉄·ボロン系磁石(以下、「R-Fe-B系磁石」と称する。RはYを含む希土類元素、Feは鉄、Bはボロンである。)は、種々の磁石の中で最も高い最大磁気エネルギー積を示し、価格も比較的安いため、各種電子機器へ積極的に採用されている。しかしながら、R-Fe-B系磁石は高温(例えば100℃以上の温度)における磁気特性(特に保磁力HcJ)が比較的低いという欠点を有している。\n\n【0003】\n\n例えば、R-Fe-B系磁石の典型的なNd-Fe-B系磁石の高温における磁気特性(例えば保磁力)を改善するために、従来は、NdをDy等の重希土類元素で置換することによって、磁石の保磁力そのものを大きくする方法が採用されていた。すなわち、温度上昇による保磁力の低下分を見込んで、室温での保磁力を大きくする方法が採られていた。\n\n【0004】\n\nしかしながら、等方性Nd-Fe-B系磁石において、NdをDyで置換すると異方性磁界が増大するので、保磁力が上昇する一方で着磁特性が低下するという問題が発生する。\n\n【0005】\n\nまた、例えば特許文献1に記載されているように、磁石のキュリー点を上昇させる試みもなされている。しかしながら、磁石のキュリー点を上昇させるためには、硬磁性相の組成を変更する必要があり、組成とキュリー点との関係は経験的に見出すしかなく、多くの実験によらなければ、高温で所望の磁気特性を有する磁石を得ることができない。\n\n【0006】\n\n【特許文献1】\n\n特開2001-196213号公報\n\n【0007】\n\n【発明が解決しようとする課題】\n\n上述したように、従来は、高温における磁気特性を向上するために硬磁性相の組成を変更していたため、膨大な実験量を必要とし、その結果、磁石材料の開発に多くの時間と費用を費やす必要があった。この問題は、例示したR-Fe-B系磁石に限られず、希土類·コバルト系磁石や最近注目されているナノコンポジット磁石についても同様である。\n\n【0008】\n\n本発明はかかる諸点に鑑みてなされたものであり、その主な目的は、硬磁性相の組成を実質的に変更することなく、高温における磁気特性が優れた希土類磁石を製造する方法を提供することにある。\n\n【0009】\n\n【課題を解決するための手段】\n\n本発明の希土類磁石の製造方法は、R2Fe14B型化合物相を含む硬磁性相とα-Fe\n\n相を含む軟磁性相とを含む組織を有する希土類磁石の製造方法であって、(a)前記硬磁性相および前記軟磁性相のそれぞれの組成および前記硬磁性相と前記軟磁性相との体積比を設定する工程と、(b)前記組成および前記体積比の条件下で、粒子間交換結合定数Je、粒子1個当たりの接触面積S、単位体積当たりの異方性定数Ku、粒子1個当たりの体積Vの値をそれぞれ設定し、η=(Je×S)/(6×Ku×V)で表される粒子間交換結合エネルギーと結晶異方性エネルギーとの比ηを求める工程と、(c)ηを単一のパラメータとみなしたシミュレーションにより、ηの関数として保磁力HcJ(η)を第1の温度T1(=室温)および第2の温度T2(≧100℃)について求める工程と、(d)前記工程(c)で得られた保磁力HcJ(η、T1)とHcJ(η、T2)とに基づいて、保磁力HcJの温度係数α(HcJ)をT1における複数のηの値について求める工程と、(e)保磁力HcJ(η)がT1において最大となるηoptimalについての温度係数|αop(HcJ)|よりも小さな温度係数|α0(HcJ)|を与えるη0を選択する工程と、(f)前記工程(a)で設定された前記組成および前記体積比の条件を満足するように前記希土類磁石の原料合金を用意し、前記工程(e)で選択されたη0が得られるように液体急冷法を利用して急冷凝固合金を作製する工程とを包含し、そのことによって上記目的が達成される。\n\n【0012】\n\nある好ましい実施形態において、η0についての室温から100℃までの保磁力の温度係数|α(HcJ)|が0.34(%/K)以下であることが好ましい。ある実施形態において、前記工程(f)は、単ロール法を用いて実行される急冷工程を含み、前記急冷工程は、第1次急冷工程と第2次急冷工程とを含み、前記第2次急冷工程の急冷速度は前記第1次冷却工程の急冷速度の0.04倍以下であることが好ましい。\n\n【0014】\n\n【発明の実施の形態】\n\n本発明者は、希土類磁石の高温における磁気特性(特に保磁力HcJ)を改善するために、磁気特性の温度依存性(温度上昇に伴う磁気特性の低下)を抑制する方法について種々検討し、その結果得られた知見に基づいて本発明に想到した。\n\n【0015】\n\n磁化容易方向が結晶粒毎にランダムな硬磁性相の微結晶より構成される希土類磁石では、その磁性発現に関係する粒子間交換結合エネルギーと異方性エネルギーとが競合し、また粒子間交換結合エネルギーは組織の形態に依存することから、組織の形態を制御することにより磁気特性が改善できると考えた。すなわち、硬磁性相の組成を実質的に変更することなく、高温における磁気特性(得に保磁力)が優れた希土類磁石を製造する方法を検討した。\n\n【0016】\n\n本発明の希土類磁石の製造方法は、図1に示すフローチャートで表される工程を包含する。以下では、改善すべき磁気特性が保磁力HcJの場合を例に本発明による実施形態の希土類磁石の製造方法を説明する。\n\n【0017】\n\nまず、工程(a)において、希土類磁石を構成する硬磁性相および軟磁性相のそれぞれの組成および硬磁性相と軟磁性相との体積比を設定する。この工程で選択される硬磁性相および軟磁性相は、既知のものであり、それぞれの基本的な磁気特性が実質的に既知または実測で求めることが可能なものである。体積比は既知の方法によって実現できる範囲に設定される。\n\n【0018】\n\n次に、工程(b)において、工程(a)で設定された組成および体積比の条件下で、粒子間交換結合定数Je、粒子1個当たりの接触面積(1個の粒子の表面積に相当)S、単位体積当たりの異方性定数Ku、粒子1個当たりの体積Vの値をそれぞれ設定し、η=(Je×S)/(6×Ku×V)(式1)で表される粒子間交換結合エネルギーと結晶異方性エネルギーとの比ηを求める。\n\n【0019】\n\n次に、工程(c)において、ηの関数として保磁力HcJ(η)を第1の温度T1(例えば室温)および第2の温度T2(>T1:例えば100℃)について求める。具体的には、後に詳述するようにコンピュータを利用したシミュレーションによって、複数の温度(T1およびT2を含む)について保磁力HcJ(η)のグラフ(横軸η、縦軸HcJ)を求める。\n\n【0020】\n\n次に、工程(d)において、得られた保磁力HcJ(η、T1)と保磁力HcJ(η、T2)とに基づいて、保磁力HcJの温度係数α(HcJ)を複数のηの値について求める。\n\n【0021】\n\n次に、工程(e)において、磁気特性MP(η)が室温において最大となるηoptimalについての温度係数|α0(HcJ)|よりも小さな温度係数|α(HcJ)|を与えるη0を選択する。このとき、目的とする高温における保磁力HcJ(T2)が所定の値を超えるようη0を設定する。なお、後に詳述するように、ηが小さくなると残留磁化Brが小さくなる傾向にあるので、所望の保磁力HcJが得られる範囲内で最も大きなηを選択することが好ましい。なお、一般に磁気特性は温度の上昇ととも低下するので、磁気特性MP(η)の温度係数α(HcJ)は負の値を取る。ここでは、温度係数の絶対値を|α(HcJ)|と表し、単に温度係数|α(HcJ)|と呼ぶことにする。\n\n【0022】\n\n工程(a)で設定された組成および体積比の条件を満足し、且つ、工程(e)で選択されたη0が得られるように、工程(f)において、希土類磁石の原料合金を用意し、液体急冷法を利用して急冷凝固合金を作製する。もともと工程(a)では、既知の希土類磁石の硬磁性相および軟磁性相から材料を選択しているので、工程(f)は基本的には既知の製造方法に従って実行することができる。\n\n【0023】\n\nなお、後に詳述するように、希土類磁石の組織は急冷速度などの製造条件によって変化するので、これまで採用されていなかった条件を設定することによって、高温磁気特性を改善できる場合もある。例えば、従来は典型的には、室温の保磁力HcJが最大となるように、組織を微細化(硬磁性相や軟磁性相となる結晶粒の微細化)するために急冷条件などを設定していた。しかしながら、本発明者が得た知見によると、保磁力の温度係数|α(HcJ)|を小さくするためには、組織が小さすぎることは好ましくない。従って、本発明による設計指針に従って、組織を制御するためには、一般に、従来と異なる急冷条件を採用することが好ましい場合が多い。\n\n【0024】\n\n以下、本発明による実施形態の希土類磁石の製造方法を詳細に説明する。以下では、硬磁性相がNd2Fe14B化合物相で、軟磁性相がα-Feである希土類ナノコンポジット磁石を例に実施形態の製造方法を説明するが、本発明はこれに限られず、硬磁性相と軟磁性相とを含む組織を有する微結晶希土類磁石に広く適用できる。\n\n【0025】\n\nまず、本発明の理論的な背景を説明する。\n\n【0026】\n\n本発明者は、微結晶磁石、すなわち磁化容易方向が結晶粒毎にランダムな硬磁性相(および軟磁性相)の微結晶より構成される磁石では、磁性発現に関係する粒子間交換結合エネルギーと結晶異方性エネルギー(単に「異方性エネルギー」と言うこともある。)とが競合すること、また粒子間交換結合エネルギーが組織の形態に依存することから、組織の形態を制御することにより磁気特性が改善できると考えた。\n\n【0027】\n\nそこで、粒子間交換結合エネルギーと異方性エネルギーとの比ηと微結晶磁石の組織との関係を計算(シミュレーション)で求めることを試みた。\n\n【0028】\n\n(結晶粒のモデル化)\n\nまず、単純化のため、微結晶希土類磁石の結晶粒は図2(a)に示したように同一粒径の立方体とし、周期境界であるとした。ここでは、各結晶粒は硬磁性相(Nd2Fe14B化合物相)または軟磁性相(α-Fe相)である。このモデルに基づいて、異方性エネルギーと粒子間交換結合エネルギーとを計算する。\n\n【0029】\n\n(異方性エネルギー)\n\n図2(b)に示したように結晶粒(i)の磁化容易方向をα(i)、磁化方向β(i)、両者がなす角をなす角δ、異方性定数をKu(i)、結晶粒の体積をV(i)とすると、異方性エネルギーは、次式で与えられる。軟磁性相のKuは0とみなしてもよい。\n\nWk(i)=Ku(i)V(i)|α(i)||β(i)|sin2δ\n\n【0030】\n\n(粒子間交換結合エネルギー)\n\n粒子間交換結合とは、結晶粒が粒界を介して電子を交換するために、スピンが平行もしくは反平行に揃おうとする現象である。強い磁性的結合の場合は平行に揃おうとする(強磁性的結合)。\n\n【0031】\n\n図1(c)は、粒子間交換結合エネルギーの計算の概念図で、結晶粒(i)と隣合う計6個の結晶(j)において、飽和磁化をIs(i)、Is(j)、磁化方向をβ(i)、β(j)、i-j間の交換定数をJe(i-j)、i-j間の接触面積をs(i-j)とすると、交換結合エネルギーWex(i)は次式で与えられる。なお、s(i-j)は隣接粒子間の接触面積を表し、粒子を立方体と仮定した場合、粒子1個の当たりの接触面積(1個の粒子の表面積に相当)Sは、6s(i-j)となる。\n\nWex(i)=\n\nΣJe(i-j)s(i-j)Is(i)β(i)Is(j)β(j)\n\n【0032】\n\n(静磁界エネルギー)\n\n図1(d)は、静磁界エネルギーの発生の概念図を示したものである。結晶粒毎に磁化方向が異なれば界面に磁極が生じて、静磁エネルギーが増加する。それを打ち消す方向に磁化方向が再配列しようとする作用が働く。そのエネルギーWm(i)を考慮する。\n\n【0033】\n\n(印加磁界によるエネルギー)\n\nその他のネルギーとしては印加磁界によるエネルギーWz(i)を考慮する。\n\n【0034】\n\n(磁化方向β(i)の計算)\n\n各結晶粒(i)についての磁気的エネルギーの総和W(i)は、次式で与えられる。\n\nW(i)=Wk(i)+Wex(i)+Wm(i)+Wz(i)\n\n【0035】\n\nまた、結晶粒全体のエネルギーは、W=ΣW(i)で表せる。\n\n【0036】\n\n微結晶磁石(典型的には等方性磁石)において粒子間交換結合が働くと、異方性エネルギーとの間に競合が生ずる。一方向に着磁した後の系全体の磁化状態を求めるには、全エネルギーWが最小になるような、磁化方向β(i)を求めるわけだが、そのようなβ(i)は数学的には無数に存在するため、観測される磁化ΣIs(i)β(i)V(i)を一義的に求めることができない。\n\n【0037】\n\nここでは、W(i)とギルバートの運動方程式からβ(i)の時間微分を求めることができるので、微小時間を掛けて数値計算的手法でβ(i)の運動を計算し、β(i)の収束値を求める。\n\n【0038】\n\n計算に用いた主なパラメータの値を表1に示す。\n\n【0039】\n\n【表1】\n\n\n\n【0040】\n\nηそのものを一つのパラメータとみなして変化させ、計算し、ηに対する磁気特性(MP)との関係を求めれば、特定のモデル組織についての磁気特性を予測できる。保磁力HCJなどの磁気特性MPの温度係数|α(MP)|は、JeとKuの温度変化によりηが変化することに対応付けて考察できる。\n\n【0041】\n\nなお、計算(シミュレーション)には、平成7年度長崎大学大学院工学研究科修士論文、北島望、「スプリングマグネットの磁気特性の計算機解析」にソースコードが記載されているプログラムの一部を改変したものを用いた。\n\n【0042】\n\n(計算結果)\n\n[室温の保磁力と残留磁化]\n\nNd2Fe14B相を90vol%、α-Fe相を10vol%としたナノコンポジット磁石の、室温における保磁力HCJおよび残留磁化Brとηの関係を図3(a)および(b)に示す。\n\n【0043】\n\n図3(a)からわかるように、保磁力HCJは、ηに対して極大値をとる。これは、上述したように、微結晶磁石では、磁性発現に関係する粒子間交換結合エネルギーと異方性エネルギーとが競合するからである。今回の計算条件では、η=0.085のときに、保磁力HCJは最大値1600kA/mとなる。一方、図3(b)からわかるように、残留磁化Brは一次的ではないが、ηの増加に対し単純に増加する。\n\n【0044】\n\nシミュレーションから導かれた保磁力および残留磁化の値は、いずれも、実験的に得られる希土類磁石の測定値のレベルよりも20%以上大きな値であり、磁気特性の絶対値自体をシミュレーションによって再現するのは難しいが、定性的には利用できる。なお、シミュレーションでこのように大きな値が算出される原因として、まず結晶のモデルにおいて粒径の分散が考慮されていないこと、および硬磁性相と軟磁性相とを同じ粒径としていることが挙げられる。また上記のモデルでは、粒界近傍もバルクの物性値を有するものとして、特に区別していないが、この粒界近傍は、バルクよりも低磁化、低Ku、低Jeとなる物性値を有する別の相と考慮すべきかもしれない。\n\n【0045】\n\n[保磁力の温度依存性]\n\n表1より、Ku(100℃)=0.8Ku(RT)である。Jeは温度変化しないと考えられるから、室温から100℃において、ηはη(100℃)=1.25η(RT)になると考えられる。ηが大きいほど、η自身の変化量が大きいから、保磁力の変化量も大きく、温度に対する変化率も大きくなる傾向にある。\n\n【0046】\n\n特に図4に示した概念図のように、希土類ナノコンポジット磁石では、HCJが室温において極大となるηをηoptimalとすると、ηがηoptimalより大きい場合と小さい場合とでは、室温で同等の保磁力であっても温度上昇による変化率はηが小さい場合の方が小さい(有利)であることが分かる。すなわち、ηoptimalよりも小さなηを有する場合のΔHCJ1は、ηoptimalよりも大きなηを有する場合のΔHCJ2よりも小さく、100℃においてより大きな保磁力HCJを有することになる。\n\n【0047】\n\n保磁力HCJの温度係数|α(HCJ)|=|{HCJ(100℃)-HCJ(RT)}/{HCJ(RT)×(100-RT)}×100|(%/K)は、室温でのηに対して、図5に示すように変化する。図5の結果からわかるように、保磁力HCJの温度係数(|α(HCJ)|)を小さくするにはηを小さくすればよいことがわかる。\n\n【0048】\n\n粒径をDとすると、SはDの二乗に比例し、VはDの三乗に比例するから、ηはDに反比例する。従って、ηを小さく方法の一つの方法として、粒径D(結晶粒の体積V)を大きくすることが考えられる。しかしながら、ηが小さいと残留磁化Brが低下するので、要求条件によってバランスをとる必要がある。なお、Jeの値としてα-Fe相の交換結合定数2.0x10-2J/m2を採用すると、η=0.05となる粒径Dは100nm程度となる。一方、福永ら、Jpn.J.Appl.Phys.、31、137(1992)によれば、粒子間交換結合定数/交換結合定数≒0.2〜0.4であり、これによりJe=4x10-3J/m2とすると、η=0.05となる粒径Dは20nm程度となる。なお、Jeは、強磁性共鳴法(FMR)を用いて測定することができる(例えば、IEEE、Trans.Magn.37、2567(2001)参照)。\n\n【0049】\n\nまた、ηを小さくする他の方法として、粒子間結合定数Jeを小さくする方法が考えられる。\n\n【0050】\n\n粒子間結合定数Jeは、粒界の厚さ、粒界中の添加元素や不純物量の量、さらには、粒界中の添加元素や不純物の分散状態(均一·不均一)に依存して変化するので、これを制御することによって、粒子間結合定数Jeを小さくすることができる。\n\n【0051】\n\nさらに、図6に模式的に示すように、室温から100℃へ温度が上昇するときに、KuだけでなくJeも同様に減少すれば、η(RT)>ηoptimalにおいても、η(100℃)=1.25η(RT)となる場合に比べて保磁力HCJの温度変化を小さくできることがわかる。すなわち粒子間交換結合Jeが温度上昇とともに小さくなるように制御すればよい。本来、粒子間交換結合Jeはほとんど温度変化しないが、粒界部分が相としては存在せず、構造不定の領域となっていれば、有効的な見かけ上の粒子間交換結合Jeを温度変化する場合もあり得ると考えられる。\n\n【0052】\n\nNd2Fe14B相を90vol%、α-Fe相を10vol%含むナノコンポジット磁石のシミュレーションより求めた磁気特性とηとの関係を表2に示す。また各パラメータが保磁力の温度係数|α(HCJ)|に対し、どのような影響を与えるかを示したのが表3である。\n\n【0053】\n\n【表2】\n\n\n\n【0054】\n\n【表3】\n\n\n\n【0055】\n\n(実施例および比較例)\n\n以下に、本発明による希土類磁石の製造方法の実施例を説明する。上記の理論的な設計指針に基づいて、ηoptimalよりも小さなηを有するNd-Fe-B系ナノコンポジット磁石を作製する。\n\n【0056】\n\nここでは、液体急冷法における急冷速度を制御することによって、粒界相の状態を変化させて、Jeを小さくする方法を検討した。具体的には、液体急冷法における二次急冷速度を一次急冷速度よりも0.04倍以上遅くすることによって、粒界相に不純物をより多く存在させることによって、Jeを小さくした。従来(例えは、米国特許第5209789号明細書参照)は、室温における磁気特性(特に最大エネルギー積)を最大にするために、冷却ガスを用いるなどして、二次急冷速度を高くする試みがなされているのに対し、本実施例では、冷却ガスを用いず、二次急冷速度を低下させた。二次急冷速度が高すぎると、合金原料中に含まれる不純物や添加元素(例えば、C、N、Si、P、Ga、Ge、S、Al、Mnなど)が主相内に多く残留し、粒界に存在する量が僅かになってしまう。\n\n【0057】\n\nなお、一次急冷速度とは、パドル位置から50mmまでのロール上の区間における急冷速度を指し、二次急冷速度とは、パドル位置から200mm以上離れた位置からの急冷速度を指す。不純物などを粒界に適度に(従来よりも多く)存在させることによって、Jeを従来よりも小さくし、その結果、ηをηoptimalよりも小さくすることができるので、保磁力HCJの温度係数を従来よりも小さくすることができる。\n\n【0058】\n\n(Nd-Fe-B系ナノコンポジット磁石の作製)\n\n試料は、液体急冷法の内の単ロール法の一つであるメルトスピニング法で以下のようにして作製した。\n\n【0059】\n\n純度99.8%のNd、純度99.9%以上のFeおよびBを19.2mass%含有するFe-B合金から、所定の合金組成(ここでは、Nd12Fe82.5B5.5)になるよう配合した後、真空溶解炉(600g/バッチ)にて母合金を作製した。\n\n【0060】\n\n次に得られた母合金を20mm角以下に粉砕し、底部にφ0.8mmのオリフィスを有する透明石英製の出湯ノズルに15gを入れ、高周波溶解により、合金溶湯にした後、溶湯噴射圧30kPaにて銅製ロール上に、出湯ノズルとロール間の距離1.0mmにて噴射し、幅約2mm、厚さ30μm〜50μmの急冷合金薄帯を作製した。\n\n【0061】\n\nここでは、出湯温度、ロール周速度は雰囲気を変えることによって、急冷速度(表4参照)を調節し、実施例、比較例1および2の急冷薄帯を得た。実施例では、出湯温度1400℃、ロール周速度25m/s、真空中で、厚さ30μmの急冷薄帯を得た。比較例1では、出湯温度1300℃、ロール周速度25m/s、アルゴンガス雰囲気中で吹きつけガス(上記米国特許参照)を用いて、厚さ40μmの急冷薄帯を得た。比較例2では、出湯温度1300℃、ロール周速度15m/s、真空中で、厚さ50μmの急冷薄帯を得た。なお、急冷速度は熱画像計測装置(ニコン社製)を用いて計測した。600℃〜1000℃のSUS棒をR熱伝対で測定した値を用いて熱画像計測装置による測定値を較正した。\n\n【0062】\n\n得られた実施例、比較例1および2の急冷薄帯を1cm長程度の短冊状に切断し、Nb箔で包装した後、石英ガラス管内に投入し、真空ポンプで吸引しながら、管状電気炉にて熱処理を行った。熱処理後の実施例の希土類磁石の平均粒径は約90nm、比較例1の希土類磁石の平均粒径は約40nm、比較例2の希土類磁石の平均粒径は、約140nmであった。\n\n【0063】\n\nなお、磁気特性はVSMにより評価した。希土類磁石の組織は、構成相をXRDにて評価し、組織をTEMにより観察した。TEM観察は、試料両面をディンプラーで研磨して20ミクロン程度とした後、イオン薄膜作製装置にてArイオンを試料に衝突させて研削することにより、厚さ方向で見て中心部分を電子線が透過するほどの薄さで露出させ、そこを観察した。\n\n【0064】\n\n【表4】\n\n\n\n【0065】\n\n表4に示した結果からわかるように、実施例の希土類磁石は、二次急冷速度を一次急冷速度の0.02倍以下に制御することによって、ηの値が0.1以下(0.05)で、保磁力の温度係数(室温と100℃との間)|α(HCJ)|は0.30となり、比較例1および2よりも低い値を有している。これは二次急冷速度が遅いために、粒界に比較的多くの不純物が存在し、その結果、Jeが小さくなった、すなわちηが小さくなったためと考えられる。比較例1および2では二次急冷速度が一次急冷速度の0.05倍であり、ηを十分に小さくする(例えば0.1以下にする)には、二次急冷速度が一次急冷速度の0.0\n\n4倍以下であることが好ましいと考えられる。\n\n【0066】\n\n従来は、Nd-Fe-B系ナノコンポジット磁石で、保磁力HCJの温度係数|α(HCJ)|を0.35以下とすることができないと考えられていたが、本発明によると、|α(HCJ)|を0.34以下、さらには、0.30以下を実現することができた。また、実施例の希土類磁石の結晶粒の平均粒径は比較例1よりも大きいにも関わらず、高温における磁気特性が比較例1よりも優れている。このように、従来は結晶粒を微細化することによって磁気特性を改善しようとする試みとは逆に、保磁力の温度係数を小さくするためには、結晶粒がある程度大きい方が有利であることがわかった。\n\n【0067】\n\n上記の実施形態では、保磁力HcJがηに対して極値(極大値)をとる例について説明したが、図7に示すように、保磁力HcJがηに対して単調に減少し、極大値をとらない希土類磁石についても本発明を適用することができる。\n\n【0068】\n\n異方性定数Kuが室温から100℃への温度変化に伴って0.8倍になり、Je、Dの温度変化は小さいと仮定すると、上記の場合と同様に、ηは室温から100℃への温度変化に伴って1.25倍になる。従って、図7に示すように、ηが小さい場合の方が室温から100℃に変化する際の保磁力の変化ΔHCJ4が、ηが大きい場合の保磁力の変化ΔHCJ5より小さくなる。すなわち、図7に示した場合にも、ηが小さい場合の方が保磁力の低下量を小さくできる。\n\n【0069】\n\n保磁力HcJの低下する割合を|α(HcJ)|=|{HcJ(RT)-HcJ(100℃)}/HcJ(室温)|とすると、|α(HcJ)|とη(RT)との関係は、図8のようになり、|α(HcJ)|を小さくするには、上記の場合と同様、ηを小さくすればよいことがわかる。\n\n【0070】\n\n上記の実施例では、組成式がNd12Fe82.5B5.5で表されるNd-Fe-B系ナノコンポジット磁石について説明したが、11.5原子%以上12.5原子%以下のR(希土類元素)、5.0原子%以上6.0原子%以下のQ(全体がB(硼素)、またはQの全体の50%以下がC(炭素)に置換されても良い。)、2.0原子%以下の微量添加元素(例えば、N、Si、P、Ga、Ge、S、Al、Mnなど、)および不可避不純物を含み、残部がFe(ただし、Feの一部はCoまたはNiと置換されても良い。)については、実施例とほぼ同様の結果を得ることができる。\n\n【0071】\n\nさらに、本発明の理論的な背景の説明からもわかるように、本発明の希土類磁石の製造方法は、Nd-Fe-B系ナノコンポジット磁石に限られず、従来のNd-Fe-B系磁石、希土類·コバルト系磁石や他のナノコンポジット磁石など、微結晶組織を有する希土類磁石の製造に広く適用することができる。\n\n【0072】\n\n【発明の効果】\n\n本発明によると、硬磁性相の組成を実質的に変更することなく、高温における磁気特性が優れた希土類磁石を製造する方法が提供される。本発明によると、高温における磁気特性に優れた希土類磁石を従来よりも効率良く開発·製造することができる。また、本発明による希土類磁石は、室温における保磁力が従来よりも低くいので、着磁特性が改善されるという利点も得られる。\n\n【図面の簡単な説明】\n\n【図1】本発明による希土類磁石の製造方法の工程を説明するためのフローチャートである。\n\n【図2】(a)〜(d)は、本発明の理論計算に用いたモデルを説明するための模式図である。\n\n【図3】(a)および(b)は、Nd2Fe14B相を90vol%、α-Fe相を10vol%としたナノコンポジット磁石の室温における保磁力HCJおよび残留磁化Brとηの関係を示すグラフである。\n\n【図4】本発明の実施形態において、保磁力の温度係数が小さくなる理由を説明するための模式図である。\n\n【図5】本発明の実施形態における、保磁力HCJの温度係数(|α(HCJ)|)とη(RT)との関係を示すグラフである。\n\n【図6】本発明の実施形態において、保磁力の温度係数が小さくなる他の理由を説明するための模式図である。\n\n【図7】本発明の実施形態において、保磁力HcJがηに対して単調に減少する場合に、保磁力の温度係数が小さくなる理由を説明するための模式図である。\n\n【図8】図7に示した関係を有する希土類磁石における保磁力HCJの温度係数(|α(HCJ)|)とη(RT)との関係を示すグラフである。', '【0001】\n\n技术领域\n\n本发明涉及稀土磁体,更具体地涉及具有微晶组织的稀土磁体。\n\n【0002】\n\n发明背景\n\n目前,在每个场中广泛使用两种类型的稀土,基于钴基磁体和稀土和铁 - 硼基磁体。其中,稀土,铁,基于硼基磁铁(下文中称为“R-Fe-B基磁体”。R是含有Y,Fe的稀土元素是铁,B是硼。)是不同的磁铁由于显示了最高最大磁能产品并且价格相对较低,因此可以为各种电子设备进行积极采用。然而,R-Fe-B基磁体具有缺点:在高温下(例如,高于100℃的温度)的磁性(特别是矫顽力HCJ)相对较低。\n\n【0003】\n\n例如,为了在R-Fe-B基磁体的典型ND-Fe-B磁体的高温下改善磁性(例如矫顽力),通常用诸如Dy等重度假村的地球元素替换ND通过这样做,采用了一种增加磁体的矫顽力本身的方法。也就是说,采用了在室温下增加矫顽力的方法,以期预期由于温度升高而导致矫顽力的降低。\n\n【0004】\n\n然而,由于当用Dy替换ND时,各向异性磁场增加,因为各向异性ND-Fe-B基磁体增加了各向异性磁场,所以存在磁化特性在矫顽力增加时降低的问题。\n\n【0005】\n\n此外,如专利文献1中所述,例如,还执行升高磁体的居里点的尝试。然而,为了提高磁铁的居里点,有必要改变硬磁相的组成,并且组合物与居里点之间的关系仅是凭经验的,并且如果它不是由于许多实验,那么它是高温,不能获得具有所需磁性的磁体。\n\n【0006】\n\n专利文献1\n\nJP 2001-196213.\n\n【0007】\n\n本发明要解决的问题\n\n如上所述,传统上,由于硬磁相的组成改变为改善高温下的磁性,因此需要大量的实验量,因此许多次数和开支磁铁材料的开发有必要花钱。该问题不限于示例性R-Fe-B磁体,并且相同适用于最近引起关注的稀土,基于钴基磁体和纳米复合材料。\n\n【0008】\n\n本发明已经鉴于此类点,并且其主要目的是提供一种在高温下具有优异磁性的稀土磁体的方法,而不会改变硬磁相的组成。即。\n\n【0009】\n\n[解决问题的手段]\n\n制造本发明的稀土磁体的方法是R2Fe.14含有B型化合物阶段具有硬磁相α-FE.\n\n阶段一种制造具有组织的稀土磁体的方法,所述组织包含软磁相,硬磁相和软磁相的组成,以及硬磁相和软磁相的体积比。在此过程中在组合物和体积比的条件下制造工艺(b),每个颗粒的颗粒交换耦合常数Je,每颗粒的接触面积S,每单位体积的各向异性常数Ku,以及每种粒子的体积。该过程确定由V的值表示的粒子交换耦合能量和晶体各向异性能量之间的比率η,并由η=(je×s)/(6×Ku×V),(c)表示通过模拟将η视为单个参数,作为η的函数矫顽力H.cJ(η)温度T1(=室温)和第二温度t2≧100℃获得的步骤和(d)在过程中获得(c)矫顽力H.cJ(η,t1)HcJ基于(η,t2),矫顽力H.cJ温度系数α(HcJ)在T1用于多个η和(e)的值的过程矫顽力H.cJ(η)T1最大ηoptimal温度因素op(HcJ小温度系数比|α比|α0(HcJ)|0选择和(f)的过程满足组合物的条件和在该过程中设定的体积比(a)制备稀土磁铁的原料合金死亡,以前的η由步骤(e)选择0可以获得液体包括使用急性冷法制造淬火凝结合金的步骤,该急性冷法实现上述目的。\n\n【0012】\n\n在一个优选的实施方案中,η.0从室温到100°C矫顽力温度系数|α(hcJ喜欢“0.34(%/ k)或更少胃。啊在实施例中,使用单辊方法进行处理(F)突然包括冷步骤,调节步骤包括第一淬火步骤和第二淬火步骤,以及第二淬火步骤的淬火速度牙齿优选的是,它是第一冷却过程的淬火速度的0.04倍或更小。\n\n【0014】\n\n发明内容\n\n本发明人的发明人是稀土磁铁的高温下的磁性(尤其是矫顽力H.cJ为了改善磁性的磁性(与温度升高相关的磁性降低)的磁性(与温度升高相关的磁性降低)的温度依赖性,并构思了本发明基于所得调查结果。\n\n【0015】\n\n在稀土磁体中,其由每个晶粒的随机磁相的微晶组成,稀土磁体由硬磁相组成,竞争粒子交换耦合能量和与磁性表达有关的各向异性能量,由于能量取决于形态,因此据认为可以通过控制组织的形态来改善晶体性交换结合。也就是说,我们在高温下检查了一种制造具有优异磁特性(矫顽力)的稀土磁体的方法,而不会改变硬磁相的组成。\n\n【0016】\n\n用于制造本发明的稀土磁体的方法包括由图3所示的流程图表示的步骤。在下文中,待改善的磁性是矫顽力H.cJ将通过示例描述根据本发明的实施例的制造稀土磁体的方法。\n\n【0017】\n\n首先,在步骤(a)中,设定了构成稀土磁体的每个硬磁相和软磁相的组成,以及硬磁相的体积比和软磁相。在该方法中选择的硬磁性和软磁共振是已知的,并且可以获得基本上已知或测量的每个基本磁性。体积比设置为可以通过已知方法实现的范围。\n\n【0018】\n\n接下来,在方法(b)中,在步骤(a)中设置的组合物和体积比的条件下,每个粒子交换耦合常数je的接触面积,一个颗粒(相当于一个粒子的表面积)s ,每个单位体积的各向异性常数Ku,每个粒子V的体积V的值,以及由η=(JE×s)/(6×Ku×V)表示的颗粒(等式1)确定交换间耦合能量的比率η和晶体各向异性能量。\n\n【0019】\n\n接下来,在步骤(c)中,矫顽力H作为η的函数cJ(η)确定为第一温度T1(例如,室温)和第二温度T2(> T1:,例如100℃)。具体地,通过使用计算机如下详述的计算机,通过模拟来矫顽力H通过模拟如下。cJ(η)图(横轴η,垂直轴H.cJ问)。\n\n【0020】\n\n接下来,在步骤(d)中,获得的矫顽力HcJ(η,t1)和矫顽力hcJ(η,t2)基于矫顽力hcJ温度系数α(hcJ作为多个η的值)。\n\n【0021】\n\n接下来,在步骤(e)中,磁性特性MP(η)在室温下最大。optimal温度因素0(HcJ小温度系数大于|α(hcJ)|0选择。此时,矫顽力H在目标高温下cJ(T2)超过预定值η0放。如稍后详细描述的,当η降低时,残留磁化Br趋于降低,因此所需的矫顽力HcJ优选选择所获得的范围内的最大η。通常,磁特性随温度的温度降低,因此磁特性MP(η)的温度系数α(HcJ)取负值。这里,温度系数的绝对值为|α(hcJ,温度系数|α(hcJ它将被称为|\n\n【0022】\n\n满足步骤(a)中组的组合物和体积比的组成,并且在步骤(e)中选择η0可以获得,在步骤(f)中,制备稀土磁体的原料合金,并且使用液态猝灭法生产淬火凝固合金。最初,在步骤(a)中,由于材料选自已知稀土磁体的硬磁相和软磁相,因此可以根据已知的制造方法进行步骤(f)。\n\n【0023】\n\n如稍后详细描述的,由于稀土磁体的组织根据诸如淬火速度的制造条件而变化,因此通过设定到目前为止未采用的条件可以提高高温磁特性。例如,通常,室温的矫顽力通常是cJ将顺序条件设定为占组织(晶粒的小型化是硬磁相和软磁相),以最大化。但是,根据本发明人获得的发现,胁迫性的温度系数|α(hcJ为了减少|较小,组织不是优选的。因此,为了根据根据本发明的设计指导控制组织,通常优选采用与传统情况不同的淬火条件。\n\n【0024】\n\n在下文中,将详细描述根据本发明的实施例的制造稀土磁体的方法。在下文中,硬磁相是ND2Fe.14在B复合阶段,尽管本实施方案的制造方法对稀土纳米复合磁体的实例进行了说明,但是软磁相是α-Fe,但本发明不限于此,并且含有硬的组织磁相和软磁相可以广泛地应用于微晶稀土磁铁。\n\n【0025】\n\n首先,将描述本发明的理论背景。\n\n【0026】\n\n本发明的发明人是由具有易于晶体的随机磁相(和软磁相)的微晶磁体(和软磁相)组成的磁体,以及与之相关的粒子可互换的粘合能量磁性表达和结晶各向异性能量(有时称为“各向异性能量”),并且由于粒子可互换的粘合能量取决于组织的形态,通过控制磁性可以改善磁性的组织的形态。\n\n【0027】\n\n因此,我们试图计算颗粒间交换耦合能量与微晶磁体的各向异性能量之间的关系与微晶磁体之间的关系。\n\n【0028】\n\n(晶粒的建模)\n\n首先,为简单起见,假设微晶稀土磁铁的晶粒是如图2所示的粒径的立方体。2(a),和这里,每个晶粒是硬磁相(ND2Fe.14B复合相或软磁相(α-Fe相)。基于该模型,计算各向异性能量和颗粒间交换耦合能量。\n\n【0029】\n\n(各向异性能量)\n\n图2.如(b)所示,晶粒(I)的磁化设施是α(i),磁化方向β(i),形成两个角度的角度δ,并且各向异性常数是ku(i)并且晶体假设颗粒的体积是V(i),通过以下等式给出各向异性能量。软磁相ku可以被视为0。\n\nW.k(i)= ku(i)v(i)|α(i)||β(i)| SIN2δ.\n\n【0030】\n\n(码间交换耦合能量)\n\n粒子交换结合是一种旋转试图通过晶界对准或反平行的现象的现象。在强磁性结合的情况下,对准对准(铁磁性结合)。\n\n【0031】\n\n图。图1(c)是粒子交换耦合能量计算的概念图,饱和磁化为(i),是(j),并且与谷粒相邻的总共6个晶体(j),并且。假设磁化方向的系数是β(i),β(j)和ij(ij)和Ij之间的接触区域,通过以下等式给出了交换耦合能量wex(i)。。另外,S(IJ)表示相邻颗粒之间的接触面积,并且当颗粒是立方体时,一个颗粒的接触面积(相当于一个粒子的表面积)是6S(IJ)和变得。\n\nWex(i)=\n\nσje(i-j)s(i-j)是(i)β(i)是(j)β(j)\n\n【0032】\n\n(静态磁场能量)\n\n图。图1D示出了静态磁场能量的产生的概念图。如果磁化方向对于每个晶粒而言,则在界面处发生磁极,并且静磁能量增加。磁化方向的动作在取消其工作的方向上重新排列。考虑其能量wm(i)。\n\n【0033】\n\n(施加磁场的能量)\n\n其他巢穴考虑了所施加的磁场的能量WZ(i)。\n\n【0034】\n\n(磁化方向β(i)的计算)\n\n每个谷物(I)的磁能的SUM W(I)由以下等式给出。\n\nw(i)= wk(i)+韦克斯(i)+ wm(i)+ wb(i)\n\n【0035】\n\n而且,整个晶粒的能量由w =σw(i)表示。\n\n【0036】\n\n当晶间交换结合在微晶磁体(通常是各向同性磁体)中时,在各向异性能量之间发生竞争。为了在一个方向上磁化之后确定整个系统的磁化状态,确定磁化方向β(i)被最小化,但是这种β(i)在数学中,由于无数,所观察到的磁化。 Σis(i)β(i)v(i)不能唯一确定。\n\n【0037】\n\n这里,由于β(i)的时间衍生物可以从W(i)的运动方程的β(i)的等式确定,因此通过微时间和β(i)计算β(i)的运动。(i找到收敛值)。\n\n【0038】\n\n用于计算的主要参数的值如表1所示。\n\n【0039】\n\n【表格1】\n\n\n\n【0040】\n\n如果η本身被改变为一个参数,则可以使用对特定模型组织的磁特性预测与磁性特性(MP)到η的关系改变。矫顽力H.CJ磁特性MP的温度系数,例如,由于JE和KU的温度变化,可以与η的变化相关联。\n\n【0041】\n\n此外,在计算(模拟)中,工程研究生硕士学位,长崎研究生院研究生院,北散米町,“弹簧磁性磁性的计算器分析”。\n\n【0042】\n\n(计算结果)\n\n[室温矫顽力和剩余磁化]\n\nn2Fe.14纳米复合磁体具有90体积%和B相的α-Fe相。CJ和残留磁化Brη关系如图1和图2所示。图3(a)和3(b)。\n\n【0043】\n\n从图3(a)中可以看出,矫顽力HCJ是η的最大值。这是因为,如上所述,在微晶磁体中,竞争与磁性表达有关的粒子交换耦合能量和各向异性能量。在该计算条件下,η= 0.085时的矫顽力HCJ最大值为1600 ka / m。另一方面,如图3(b)所示,残余磁化Br不是初级的,但只要相对于η的增加而简单地增加。\n\n【0044】\n\n源于模拟的矫顽力和残余磁化的值是大于实验获得的稀土磁体的测量值的值的20%或更大的值,并且通过模拟再现磁特性的绝对值本身。这很困难,而是可疑的。另外,作为计算模拟中的大值的原因,不认为在晶体模型中不考虑粒径的分散,并且使用相同的粒径与相同的粒径。可以。此外,在上述模型中,尽管晶界附近也没有特别区分,但该晶界附近低于散装,低Ku,低je的附近,以及变得低je的物理性质值。它可以被视为一个阶段。\n\n【0045】\n\n[矫顽力的温度依赖性]\n\n从表1,ku(100℃)= 0.8ku(rt)。由于JE被认为改变温度,因此认为η(100℃)= 1.25η(RT)在室温至100℃。 η本身的变化量越大,矫顽力的变化量大,温度变化率趋于更大。\n\n【0046】\n\n特别地,如图2所示的概念图所示。如图4所示,在稀土纳米复合磁体中,CJ在室温下最大。optimal并且,η是ηoptimal在较大且小的情况下,可以看出,即使在室温下的矫顽力由于温度升高而等于,η较小(有利)的情况较小(有利)。也就是说,ηoptimalΔh比η小CJ1是η.optimalΔH有较大的ηCJ2在100°C时更小,矫顽力CJ它将有。\n\n【0047】\n\n矫顽力H.CJ温度系数|α(hCJ)| = | {HCJ(100°C)-hCJ(rt)} / {hCJ(RT)×(100-RT)}×100 |(%/ k)如图2所示的变化。在室温下相对于η相对于η。从图5的结果可以看出,矫顽力HCJ温度系数(|α(hCJ可以看出,η可以减少以减少|)。\n\n【0048】\n\n假设粒度为D,S与D的平方成比例,V与D成比例.Eta与D成反比。因此,可以想到将粒径D(晶粒V的体积V)增加为减少η的一种方法。但是,当η是小的,剩余磁化br由于减少,因此必须根据要求进行平衡。此外,将α-FE相的替代耦合常数作为JE 2.0x10的值-2J / M.2采用时,η= 0.05的粒径D约为100nm。另一方面,根据Fukunaga等,JPN.J.appl.phys。,31,137(1992),晶间交换耦合恒定/交换耦合恒定≥0.2至0.4,导致JE = 4x10-3J / M.2然后,η= 0.05处的粒径D为约20nm。注意,可以使用铁磁共振(FMR)测量JE(参见,例如,IEEE,Trans。MANG。37,2567(2001))。\n\n【0049】\n\n而且,作为还原η的另一种方法,可以考虑减少末端耦合恒定JE的方法。\n\n【0050】\n\n颗粒偶联常数JE在晶界的厚度下变化,晶界中的添加剂元素或杂质量的厚度,均匀地取决于添加剂元素和晶界中的杂质的分散状态和杂质。由于这是控制的,可以减少晶粒偶联常数JE。\n\n【0051】\n\n此外,如图2所示。optimal同样在将η(100℃)= 1.25(RT)与矫顽力H进行比较的情况下CJ可以看出,温度变化很小。也就是说,可以控制晶间交换耦合JE以便更小,随着温度升高。最初,晶间交换耦合JE几乎不会改变几乎没有温度,而是如果不存在晶粒边界部分,并且如果它是结构不确定的区域,则改变有效的表观粒子交换耦合JE。它可能是可能是可能的。\n\n【0052】\n\nn2Fe.14从含有90体积%和10VOL%B的纳米复合磁体的模拟中获得的磁性之间的关系如表2所示。此外,每个参数是胁迫性的温度系数|α(hCJ表3显示了如何影响|\n\n【0053】\n\n[表2]\n\n\n\n【0054】\n\n[表3]\n\n\n\n【0055】\n\n示例和比较例\n\n在下文中,将描述根据本发明的制造稀土磁体的方法的实施例。基于上述理论设计指南,ηoptimal产生具有较小η的基于ND-Fe-B的纳米复合磁体。\n\n【0056】\n\n这里,通过控制液体淬火方法中的淬火速度,降低晶界阶段的状态以减少je的方法。具体地,通过在液体猝灭法以液位边界率降低到晶界相的次级猝灭速率,通过将晶界相120倍的次级猝灭速率提高了晶界相的更多杂质来减少JE。通常,参考(见美国专利No.5,209,789)是室温下的磁性性能(特别的为了最大化最大能量产品),已经尝试增加第二淬火速度等,而是在本实施例中,次级淬火而不使用冷却气体。速度降低。如果二次淬火速度太高,则合金原料中包含的杂质和添加剂元件(例如,C,N,Si,P,Ga,Ge,S,Al,Mn等)仍然存在于主阶段,谷物边界存在的金额变得轻微。\n\n【0057】\n\n初级淬火速度是指辊位置的部分中的淬火速率至50mm,并且二次淬火速度是指从桨位置分开200mm或更多的位置的淬火速率。通过剩下杂质等(超过常规),je小于以前,结果η是optimal因为它可以小于,矫顽力CJ温度的温度系数可以小于以前。\n\n【0058】\n\n(生产ND-FE-B基纳米复合磁铁)\n\n在熔融纺丝方法中如下制备样品,其是液态淬火方法内的单辊方法之一。\n\n【0059】\n\n从含有19.2质量%的Fe和B的Fe-B合金,纯度为99.8%Nd,纯度为99.9%或更多,预定的合金组成(这里,Nd12Fe.82.5B.5.5制剂(600g /批次)后,在制剂后在真空熔化炉(600g /批次)下产生母体合金。\n\n【0060】\n\n接下来,将所得碱基合金研磨至20mm平方或更小,15g在底部具有0.8mm孔的透明石英保湿喷嘴,并且在高频溶解之后,熔融金属注射压力在快速水后是30kPa在热水供应喷嘴和辊之间的距离在1.0mm的距离处注入供应喷嘴,并且产生宽度为约2mm且厚度为30μm至50μm的快速冷却的合金带。\n\n【0061】\n\n这里,加热温度和辊周向速度通过改变大气来调节快速冷速率(参见表4),并获得比较例1和2的淬火带。在该实施例中,快速水温为1400℃,辊周速度为25m / s,真空获得厚度为30μm的淬火带。在比较例1中,使用1300℃的供水温度,25m / s的卷周长和氩气气氛(美国专利参考文献)获得40μm厚度为40μm。在比较例2中,快速水温为1300℃,辊周速度为15m / s,真空获得厚度为50μm的淬火人的猝灭性。使用热图像测量装置(由尼康制造)测量淬火速度。使用由600℃至1000℃测量的由R导热来校准热成像装置的测量值。\n\n【0062】\n\n将比较例1和2的淬火带切割成长约1cm长的条带,并且在Nb箔中包装,然后用真空泵吸入管状电炉。进行热处理。热处理后,实施例的稀土磁体的平均粒径为约90nM,比较例1的稀土磁体的平均粒径为约40nm,比较例2的稀土磁铁的平均粒径约为140nm是m.\n\n【0063】\n\n通过VSM评估磁性。通过XRD评估稀土磁体的组织,通过TEM观察组织。在样品双面约为20微米后,TEM观察约为20微米,并且在用离子薄膜制造装置研磨AR离子之后,并在厚度方向上看到中心部分。暴露于渗透物稀释剂那里观察。\n\n【0064】\n\n表4.\n\n\n\n【0065】\n\n从表4所示的结果可以看出,实施例的稀土磁体控制初级猝灭速率的二次猝灭速率至0.02倍或更小,因此η的值为0.1或更低(0.05),以及矫顽力温度系数(室温和100°C)|α(HCJ)|是0.30,其值低于比较例1和2。这被认为是由于由于慢淬火速度慢的晶界的杂质数量相对大,因此,je减小,即η降低。在比较例1和2中,二次猝灭速率为初级淬火率的0.05倍,η足够小(例如,0.1或更小),二次猝灭速率为0.0.0.0的初级猝灭速率。\n\n优选为4次或更小。\n\n【0066】\n\n通常,基于ND-Fe-B的纳米复合材料,矫顽力H.CJ温度系数|α(hCJ虽然据认为是根据本发明的| |(h)|CJ()可以实现0.34或更低,甚至超过0.30。此外,尽管该实施方案的稀土磁体的晶粒的平均粒径的比较例1的平均粒径,但高温下的磁性优异于比较例1。如上所述,传统上,通过小型化晶粒,使得在某种程度上使谷物使颗粒在一定程度上发现以降低矫顽力的温度系数。\n\n【0067】\n\n在上述实施例中,矫顽力HcJ但是,尽管拍摄极值(最大值)的示例,但是如图4所示。7,矫顽力HcJ本发明还可以应用于稀土磁体,其单调减少到η并且不是显着的显着值。\n\n【0068】\n\n各向异性常数Ku是0.8倍,温度从室温变为100℃,假设JE和D的温度变化很小,η为温度至100°C,如上所述。它将是1.25次变化。因此,如图2所示。如图7所示,在从室温到100℃的更换时矫顽力的变化较小。CJ4然而,当η大Δh时矫顽力的变化CJ5它会较小。也就是说,也在图1所示的情况下,如图7所示,如果η小,则可以减小矫顽力量。\n\n【0069】\n\n矫顽力H.cJ减少的速率|α(hcJ)| = | {HcJ(rt)-hcJ(100°C)} / hcJ(室温)|cJ|和η(RT)之间的关系如图2所示。如图8所示,为了减少|α(HCJ)|,可以看出,η可以像上面的情况一样减小。\n\n【0070】\n\n在上述实施方案中,组合式式是ND12Fe.82.5B.5.5虽然基于ND-Fe-B的纳米复合磁体由11.5原子%或更多和12.5原子%或更小,R(稀土元素),5.0原子%或更多和6.0原子%或更低Q(全B(硼)或者,50%或更少的Q可以被C(碳)取代。),2.0原子%或更少,次要添加剂元素(例如,N,Si,P,Ga,Ge,S,Al,Mn等)剩余的杂质可容许,其余的是Fe(Fe的一部分可以用CO或Ni取代)。可以获得与实施例中的类似结果。\n\n【0071】\n\n此外,从本发明的理论背景描述可以看出,本发明的稀土磁体的制造方法不限于ND-Fe-B纳米复合磁体,以及常规的ND-Fe-B基磁铁,可以广泛应用于具有微晶组织的稀土磁体的制造,例如稀土,钴磁铁和其他纳米复合磁体。\n\n【0072】\n\n【发明效果】\n\n根据本发明,提供了一种制造具有在高温下具有优异磁性特性的稀土磁体的方法,而不大大改变硬磁相的组成。根据本发明,可以有效地开发和制造高温下磁性特性优异的稀土磁铁。此外,根据本发明的稀土磁体还提供了一种优点,即磁化特性是改善的,因为室温下的矫顽力低于传统壳体。\n\n[简要描述;简介]\n\n【图1】图3是用于说明根据本发明的稀土磁体的制造方法的过程的流程图。\n\n【图2】(a) - (d)是用于说明用于本发明的理论计算的模型的示意图。\n\n图3.(a)和(b)是nd2Fe.14纳米复合磁体,具有90体积%和10Vol%B的α-Fe相。CJ和残留磁化Br图3是表示η的关系的图。\n\n图4.图。图7是用于说明本发明的实施例中矫顽力的温度系数减小的原因的示意图。\n\n图5.在本发明的实施例中,矫顽力HCJ温度系数(|α(hCJ图3是表示|()|)|)|)|)|)|)|)|)的图是一种图为|)|)|)|)|)|)。\n\n6.在本发明的实施例中,示出了矫顽力的温度系数降低的原因的示意图。\n\n图7.在本发明的实施例中,矫顽力HcJ图3是说明在相对于η单调减小时矫顽力的温度系数减小的原因的示意图。\n\n图8具有图1所示关系的稀土磁铁中的共胁迫H.CJ温度系数(|α(hCJ图3是表示|()|)|)|)|)|)|)|)|)的图是一种图为|)|)|)|)|)|)。');
INSERT INTO `os_patent_instruction_text` VALUES (12970, 22799, '[0001] Die vorliegende Erfindung bezieht sich auf ein Verfahren und eine Vorrichtung zur Herstellung eines granulierten Seltenerdmetall-\n\nLegierungspulvers und auf ein Verfahren zur Herstellung eines Seltenerdmetall-Legierungssinterkörpers.\n\n\n\n\n\n[0002] Ein Seltenerdmetall-Legierungssintermagnet (Permanentmagnet) wird normalerweise hergestellt durch Pressen eines Pulvers aus einer\n\nSeltenerdmetall-Legierung, Sintern des resultierenden Pulverpresslings und anschließende Durchführung einer Alterungsbehandlung mit dem\n\nSinterkörper. Permanentmagnete, die derzeit in großem Umfang für verschiedene Anwendungszwecke eingesetzt werden, umfassen Magnete auf\n\nSeltenerdmetall-Kobalt-Basis und Magnete auf Seltenerdmetall-Eisen-Bor-Basis. Unter anderem werden die Magnete auf Seltenerdmetall-Eisen-Bor-\n\nBasis (nachstehend hier als \"Magnete auf \"R-Fe-B-Basis\" bezeichnet, worin R für eines der Elemente der Seltenen Erden einschließlich Y, Fe für Eisen\n\nund B für Bor stehen) immer häufiger in verschiedenen elektronischen Geräten verwendet. Dies ist darauf zurückzuführen, dass ein Magnet auf R-Fe-\n\nB-Basis ein maximales Energieprodukt aufweist, das höher ist als bei irgendeinem der verschiedenen anderen Magnet-Typen und dass er dennoch\n\nverhältnismäßig billig ist.\n\n\n\n\n\n[0003] Ein Sintermagnet auf R-Fe-B-Basis umfasst eine Hauptphase, die im Wesentlichen aus einer tetragonalen R2Fe14B-Verbindung besteht, eine\n\nR-reiche Phase, die beispielsweise Nd enthält, und eine B-reiche Phase. In dem Sintermagneten auf R-Fe-B-Basis kann ein Teil des Fe durch ein\n\nÜbergangsmetall wie Co oder Ni ersetzt sein und ein Teil des Bors (B) kann durch Kohlenstoff (C) ersetzt sein. Ein Sintermagnet auf R-Fe-B-Basis, auf\n\nden die vorliegende Erfindung mit Vorteil anwendbar ist, ist beispielsweise in den US-Patenten Nr. 4 770 723 und 4 792 368 beschrieben.\n\n\n\n\n\n[0004] Bei dem Stand der Technik wird eine Legierung auf R-Fe-B-Basis hergestellt als ein Material für einen solchen Magneten durch Anwendung\n\neines Blockgieß-Verfahrens. Bei einem Blockgieß-Verfahren werden normalerweise ein Metall der Seltenen Erden, elektrolytisches Eisen und eine\n\n\n\nFerrobor-Legierung als jeweilige Ausgangsmaterialien durch Anwendung eines Induktionserhitzungs-Verfahrens zum Schmelzen gebracht und dannwird die auf diese Weise erhaltene Schmelze in einer Gießform verhältnismäßig langsam abgekühlt, wodurch ein Legierungsblock erhalten wird.\n\n\n\n\n\n[0005] Neuerdings hat ein schnelles Abkühlungsverfahren, beispielsweise ein Bandgießverfahren oder ein Zentrifugengießverfahren, viel\n\n\n\nAufmerksamkeit in dem Stand der Technik gefunden. Bei einem schnellen Abkühlungsverfahren wird eine geschmolzene Legierung in Kontakt gebracht\n\n\n\nmit und verhältnismäßig schnell abgekühlt mittels einer Einzel-Abschreckungswalze, einer Doppel-Abschreckungswalze, einer rotierenden Scheibe oder\n\n\n\nder inneren Oberfläche einer rotierenden zylindrischen Gießform, wodurch aus der geschmolzenen Legierung eine erstarrte (verfestigte) Legierung\n\n\n\nhergestellt wird, die dünner ist als ein Legierungsblock. Die auf diese Weise hergestellte erstarrte bzw. verfestigte Legierung wird nachstehend\n\n\n\nals \"Legierungsflocke\" oder \"Legierungslamelle\" bezeichnet. Die durch Anwendung eines solchen schnellen Abkühlungsverfahrens hergestellte\n\n\n\nLegierungsflocke hat in der Regel eine Dicke von etwa 0,03 mm bis etwa 10 mm. Bei Anwendung des schnellen Abkühlungsverfahrens beginnt die\n\n\n\ngeschmolzene Legierung von ihrer Oberfläche her fest zu werden (zu erstarren), die mit der Oberfläche der Abschreckungswalze in Kontakt kommt.\n\n\n\nDiese Oberfläche der geschmolzenen Legierung wird hier als \"Walzenkontaktoberfläche\" bezeichnet. Bei dem schnellen Abkühlungsverfahren wachsen\n\n\n\ndaher säulenförmige Kristalle in Richtung der Dicke ausgehend von der Walzenkontaktoberfläche. Als Folge davon hat die schnell erstarrte Legierung,\n\n\n\ndie durch Anwendung eines Bandgießverfahrens oder irgendeines anderen schnellen Abkühlungsverfahrens hergestellt worden ist, eine Struktur, die\n\n\n\neine kristalline R2Fe14B-Phase und eine R-reiche Phase umfasst. Die kristalline R2Fe14B-Phase hat in der Regel eine Nebenachsen-Größe von etwa 0,1\n\n\n\n&mgr;m bis etwa 100 &mgr;m und eine Hauptachsengröße von etwa 5 &mgr;m bis etwa 500 &mgr;m. Andererseits ist die R-reiche Phase, bei der es\n\n\n\nsich um eine nichtmagnetische Phase handelt, die ein Element der Seltenen Erden R in einer verhältnismäßig hohen Konzentration enthält und eine\n\n\n\nDicke (entsprechend der Breite der Korngrenze) von etwa 10 &mgr;m oder weniger aufweist, in der Korngrenze zwischen den kristallinen R2Fe14B-\n\n\n\nPhasen dispergiert.\n\n\n\n\n\n[0006] Im Vergleich zu einer nach dem konventionellen Blockgießverfahren oder Formgießverfahren hergestellten Legierung (eine solche\n\n\n\nLegierung wird hier als \"Ingot-Legierung\" bezeichnet) wird eine schnell erstarrte Legierung innerhalb einer kürzeren Zeit abgeschreckt (d.h. mit einer\n\n\n\nAbkühlungsgeschwindigkeit von 102°C/s\n\n\n\n\n\nbis 104°C/s). Die schnell erstarrte Legierung weist daher eine feinere Struktur auf und hat eine geringere Kristallkorngröße. Außerdem hat in der schnell\n\n\n\nerstarrten Legierung ihre Korngrenze eine größere Fläche und die R-reiche Phase ist innerhalb der Korngrenze breit und dünn dispergiert (verteilt).\n\n\n\nDie schnell erstarrte Legierung weist somit auch eine ausgezeichnete Dispergierbarkeit der R-reichen Phase auf. Da die schnell erstarrte Legierung\n\n\n\ndie vorstehend beschriebenen vorteilhaften Merkmale aufweist, kann ein Magnet mit ausgezeichneten magnetischen Eigenschaften aus der schnell\n\n\n\nerstarrten Legierung hergestellt werden.\n\n\n\n\n\n[0007] Ein alternatives Legierungsherstellungsverfahren, das so genannte \"Ca-Reduktionsverfahren (oder Reduktions/Diffusionsverfahren)\"\n\n\n\nist ebenfalls aus dem Stand der Technik bekannt. Dieses Verfahren umfasst die folgenden Behandlungs- und Herstellungsstufen: Zugabe von\n\n\n\nmetallischem Calcium (Ca) und Calciumchlorid (CaCl) entweder zu der Mischung aus mindestens einem Seltenerdmetalloxid, Eisenpulver, reinem\n\n\n\nBorpulver und mindestens einem Ferrobor-Pulver und Boroxid in einem vorgegebenen Verhältnis oder zu einer Mischung, die ein Legierungspulver\n\n\n\noder ein Mischoxid enthält oder einem Mischoxid aus diesen Aufbauelementen in einem vorgegebenen Verhältnis; Durchführen einer Reduktions/\n\n\n\nDiffusions-Behandlung mit der resultierenden Mischung innerhalb einer inerten Atmosphäre; Verdünnen des erhaltenen Reaktanten zur Herstellung\n\n\n\neiner Aufschlämmung und anschließendes Behandeln der Aufschlämmung mit Wasser. Auf diese Weise kann ein Feststoff aus einer Legierung auf R-\n\n\n\nFe-B-Basis erhalten werden.\n\n\n\n\n\n[0008] Es sei darauf hingewiesen, dass jeder kleine Block aus einer festen Legierung hier als \"Legierungsblock\" bezeichnet wird. Der\n\n\n\n\"Legierungsblock\" kann irgendeine von verschiedenen Formen von festen Legierungen sein, die nicht nur erstarrte Legierungen, die durch\n\n\n\nAbkühlen einer Schmelze eines Legierungsmaterials erhalten worden sind (beispielsweise einen Legierungsblock, der durch das konventionelle\n\n\n\nBlockgießverfahren hergestellt worden ist, oder eine Legierungsflocke, die durch ein schnelles Abkühlungsverfahren, wie z.B. ein Bandgießverfahren\n\n\n\nhergestellt worden ist), sondern auch eine feste Legierung, die durch das Ca-Reduktionsverfahren hergestellt worden ist, umfassen.\n\n\n\n\n\n[0009] Ein Legierungspulver, das gepresst werden soll, wird erhalten durch Durchführung der folgenden Behandlungsstufen: grobes Pulverisieren\n\n\n\neines Legierungsblockes in einer dieser Formen durch Anwendung beispielsweise eines Wasserstoffeinschluss-Verfahrens und/oder irgendeine der\n\n\n\nverschiedenen mechanischen Mahlverfahren (wie z.B. unter Verwendung einer Scheibenmühle); und feines Pulverisieren des resultierenden groben\n\n\n\nPulvers (mit einer mittleren Teilchengröße von 10 &mgr;m bis 500 &mgr;m) durch Anwendung eines trockenen Mahlverfahrens unter Verwendung\n\n\n\nbeispielsweise einer Strahlmühle.\n\n\n\n\n\n[0010] Die Legierung auf R-Fe-B-Basis, die gepresst werden soll, hat vorzugsweise eine mittlere Teilchengröße von 1,5 &mgr;m bis etwa 6 &mgr;m,\n\n\n\num ausreichende mechanische Eigenschaften zu erzielen. Es sei darauf hingewiesen, dass die \"mittlere Teilchengröße\" eines Pulvers hier, wenn nichts\n\n\n\nanderes angegeben ist, eine FSSS-Teilchengröße ist. Wenn jedoch ein Pulver mit einer derart niedrigen mittleren Teilchengröße verwendet wird, sind\n\n\n\ndie resultierende Fließfähigkeit, Pressbarkeit (einschließlich der Hohlraumfüllungsdichte und der Komprimierbarkeit) und die Produktivität schlecht.\n\n\n\n\n\n[0011] Um diese Probleme zu überwinden, wurde bereits ein Verfahren zum Beschichten der Oberfläche von Legierungspulver-Teilchen mit einem\n\n\n\nGleitmittel vorgeschlagen. So ist beispielsweise in der offengelegten japanischen Patentpublikation Nr. 08-111 308 und in dem US-Patent Nr. 5 666\n\n\n\n635 ein Verfahren zur Herstellung eines feinen Legierungspulvers auf R-Fe-B-Basis (mit einer mittleren Teilchengröße von 1,5 &mgr;m bis 5 &mgr;m)\n\n\n\nbeschrieben durch Zugabe von 0,02 Massenprozent bis 5,0 Massenprozent eines Gleitmittels (z.B. mindestens eines verflüssigten Fettsäureesters) zu\n\n\n\neinem groben Legierungspulver auf R-Fe-B-Basis mit einer mittleren Teilchengröße von 10 &mgr;m bis 500 &mgr;m und anschließendes Pulverisieren\n\n\n\nder Mischung mittels einer Strahlmühle innerhalb eines inerten Gases.\n\n\n\n\n\n[0012] Das Gleitmittel verbessert nicht nur das Fließvermögen und die Pressbarkeit (oder Komprimierbarkeit) des Pulvers, sondern fungiert auch als\n\n\n\nBindemittel zur Erhöhung der Härte (oder Festigkeit) des Presslings. Dennoch kann das Gleitmittel auch als restlicher Kohlenstoff in dem Sinterkörper\n\n\n\nverbleiben, wo er möglicherweise die magnetischen Eigenschaften beeinträchtigt (verschlechtert). Daher muss das Gleitmittel eine gute Bindemittel-\n\n\n\nEntfernbarkeit aufweisen. So sind beispielsweise in der offengelegten japanischen Patentpublikation Nr. 2000-306753 als bevorzugte Gleitmittel mit\n\n\n\neiner guten Bindemittelentfernbarkeit depolymerisierte Polymere, Mischungen aus einem depolymerisierten Polymer und einem Kohlenwasserstoff-\n\n\n\nLösungsmittel und Mischungen aus einem depolymerisierten Polymer, einem Mineralöl mit niedriger Viskosität und einem Kohlenwasserstoff-\n\n\n\nLösungsmittel beschrieben.\n\n\n\n\n\n[0013] Bei diesem Verfahren, bei dem ein Gleitmittel verwendet wird, wird zwar ein bestimmter Grad der Ver\n\n\n\n\n\nbesserung erzielt, es ist jedoch immer noch schwierig, den Hohlraum mit dem Pulver genügend gleichmäßig zu füllen oder einen ausreichenden Grad\n\n\n\nder Pressbarkeit zu erzielen. Unter anderem weist ein Pulver, das unter Anwendung eines Bandgießverfahrens oder irgendeines anderen schnellen\n\n\n\nAbkühlungsverfahrens (mit einer Abkühlungsgeschwindigkeit von 102°C/s bis 104°C/s) hergestellt worden ist, eine geringere mittlere Teilchengröße\n\n\n\nund eine engere Teilchengrößenverteilung auf als ein Pulver, das nach einem Blockgießverfahren hergestellt worden ist und daher insbesondere ein\n\n\n\nschlechtes Fließvermögen hat. Aus diesem Grund kann die Menge des Pulvers, die in den Hohlraum eingefüllt werden soll, manchmal den zulässigen\n\n\n\nBereich übersteigen oder die Hohlraumfüllungsdichte kann ungleichmäßig sein. Als Folge davon können die Variationen in Bezug auf die Masse oderdie Dimensionen der Presslinge ihre zulässigen Bereiche überschreiten oder in den Presslingen können Risse oder Absplitterungen auftreten.\n\n\n\n\n\n[0014] Als ein anderes (weiteres) Verfahren zur Verbesserung des Fließvermögens und der Pressbarkeit eines Legierungspulvers auf R-Fe-B-Basis\n\n\n\nwurde vorgeschlagen, ein granuliertes Pulver herzustellen.\n\n\n\n\n\n[0015] So ist beispielsweise in der offengelegten japanischen Patentpublikation Nr. 63-237 402 beschrieben, dass die Pressbarkeit verbessert\n\n\n\nwerden kann mit einem granulierten Pulver, das hergestellt worden ist durch Zugabe von 0,4 Massenprozent bis 4,0 Massenprozent einer Mischung aus\n\n\n\neiner Paraffin-Verbindung (die bei Raumtemperatur flüssig ist) und einem aliphatischen Carboxylat zu dem Pulver und durch Mahlen und Granulieren\n\n\n\nderselben. Ein Verfahren, bei dem Polyvinylalkohol (PVA) als Granuliermittel verwendet wird, ist ebenfalls bekannt. Es sei darauf hingewiesen, dass\n\n\n\nsowohl das Granuliermittel als auch ein Gleitmittel als Bindemittel fungieren zur Erhöhung der Festigkeit des Presslings.\n\n\n\n\n\n[0016] Wenn jedoch das in der offengelegten japanischen Patentpublikation Nr. 63-237 402 beschriebene Granuliermittel verwendet wird, dann ist\n\n\n\ndie Bindemittelentfernbarkeit so schlecht, dass die magnetischen Eigenschaften eines Sinterkörpers aus einer Legierung auf R-Fe-B-Basis durch den in\n\n\n\ndem Sinterkörper verbleibenden Kohlenstoff beeinträchtigt (verschlechtert) werden.\n\n\n\n\n\n[0017] Andererseits weist das granulierte Pulver, das durch Anwendung eines Sprühtrockungsverfahrens auf PVA hergestellt worden ist, eine\n\n\n\nhohe Bindekraft auf und es ist nicht zu hart, um vollständig zerkleinert werden zu können, selbst beim Anlegen eines äußeren magnetischen Feldes.\n\n\n\nDaher können seine primären Teilchen nicht in ausreichendem Maße auf das magnetische Feld ausgerichtet werden und es können keine Magnete\n\n\n\nmit ausgezeichneten magnetischen Eigenschaften erhalten werden. PVA weist auch eine schlechte Bindemittelentfernbarkeit auf und der aus PVA\n\n\n\nstammende Kohlenstoff neigt dazu, in den Magneten zu verbleiben. Dieses Problem kann jedoch überwunden werden durch Durchführung eines\n\n\n\nBindemittelentfernungs-Verfahrens in einer Wasserstoff-Atmosphäre. Es ist jedoch immer noch schwierig, diesen Kohlenstoff in ausreichendem Maße\n\n\n\nzu entfernen.\n\n\n\n\n\n[0018] Um das Problem zu lösen, dass das granulierte Pulver selbst unter einem ausrichtenden magnetischen Feld schwer zu zerkleinern ist, hat der\n\n\n\nAnmelder der vorliegenden Erfindung ein Verfahren zur Herstellung eines granulierten Pulvers vorgeschlagen, in dem die jeweiligen Pulverteilchen (d.h.\n\n\n\ndie jeweiligen Primärteilchen), die mit einem magnetischen Pulver ausgerichtet worden sind, mit einem Granuliermittel gebunden (gekoppelt) werden\n\n\n\ndurch Granulieren des Pulvermaterials bei einem daran angelegten statischen magnetischen Feld (vgl. die offengelegte japanische Patentpublikationen\n\n\n\nNr. 10-140202). Wenn dieses granulierte Pulver verwendet wird, sind die magnetischen Eigenschaften verbessert im Vergleich zur Verwendung\n\n\n\neines granulierten Pulvers, in dem die Primärteilchen die nicht mit einem angelegten magnetischen Feld ausgerichtet worden sind, mit einem\n\n\n\nGranuliermittel gebunden (gekoppelt) werden. Es ist jedoch schwierig, die gepressten Pulverteilchen mit dem magnetischen Feld in ausreichendem\n\n\n\nMaße auszurichten. Infolgedessen sind die resultierenden magnetischen Eigenschaften schlechter als in einer Situation, in der ein nicht-granuliertes\n\n\n\nSeltenerdmetall-Legierungspulver verwendet wird.\n\n\n\n\n\n[0019] Es wurden bereits verschiedene Granuliermittel und Granulierverfahren vorgeschlagen, wie vorstehend beschrieben. Ein Verfahren für die\n\n\n\nMassenproduktion eines granulierten Pulvers aus einer Seltenerdmetall-Legierung, das ein ausgezeichnetes Fließvermögen und eine ausgezeichnete\n\n\n\nPressbarkeit aufweist und das zur Herstellung von Magneten mit guten magnetischen Eigenschaften beitragen kann, wurde bisher jedoch noch nicht\n\n\n\nentwickelt.\n\n\n\n\n\n[0020] Andererseits nimmt die Nachfrage nach kleineren, dünneren und leistungsfähigeren Magneten zu. Deshalb ist die Entwicklung eines\n\n\n\nVerfahrens zur Herstellung von kleinen oder dünnen Hochleistungsmagneten mit einer hohen Produktivität erwünscht. Allgemein gilt, dass dann, wenn\n\n\n\nein Seltenerdmetall-Legierungssinterkörper (oder ein durch Magnetisierung des Sinterkörpers erhaltener Magnet) maschinell bearbeitet wird,\n\n\n\n\n\nseine magnetischen Eigenschaften schlechter werden als Folge von Spannungen, die durch die maschinelle Bearbeitung verursacht werden. Eine\n\n\n\nsolche Verschlechterung der magnetischen Eigenschaften ist bei einem kleinen Magneten nicht vernachlässigbar. Daher ist es, je geringer die\n\n\n\nGröße des herzustellenden Magneten ist, umso mehr erforderlich, einen Sinterkörper herzustellen, der eine hohe Dimensionsgenauigkeit hat, um\n\n\n\nmöglichst überhaupt keine maschinelle Bearbeitung zu benötigen, und der auch die herzustellende endgültige Gestalt hat. Die Nachfrage nach einem\n\n\n\nSeltenerdmetall-Legierungspulver mit einem ausgezeichneten Fließvermögen und einer ausgezeichneten Pressbarkeit (beispielsweise unter anderem\n\n\n\nfür ein Legierungspulver auf R-Fe-B-Basis) nimmt auch aus diesen Gründen weiter zu.\n\n\n\n\n\n[0021] Ferner ist aus der JP 10 140 202 A ein Verfahren zur Herstellung eines Pulvers mit gutem Fließvermögen bekannt, bei dem das Pulver\n\n\n\ndurch ein Magnetfeld orientiert und anschließend granuliert wird. Dieser Stand der Technik betrifft jedoch nicht das Granulieren von Seltenerdmetall-\n\n\n\nLegierungspulver.\n\n\n\n\n\n[0022] Aus der DE 37 80 588 T2 ist ein Verfahren zur Herstellung eines gesinterten Permanentmagneten bekannt. Zur Herstellung dieses Magneten\n\n\n\nwird in diesem bekannten Stand der Technik vorgeschlagen, ein Seltenerdmetall-Legierungspulver zu verwenden.\n\n\n\nBeschreibung der Erfindung\n\n\n\n\n\n[0023] Um die vorstehend beschriebenen Probleme zu überwinden, besteht ein primärer Gegenstand der vorliegenden Erfindung darin, ein\n\n\n\nVerfahren zur Herstellung eines granulierten Seltenerdmetall-Legierungspulvers zur Verfügung zu stellen, das ein gutes Fließvermögen und eine gute\n\n\n\nPressbarkeit aufweist und die Herstellung eines Magneten mit ausgezeichneten magnetischen Eigenschaften ermöglicht, sowie ein Verfahren zur\n\n\n\nHerstellung eines qualitativ hochwertigen Sinterkörpers aus einer Seltenerdmetall-Legierung mit einer hohen Produktivität anzugeben.\n\n\n\n\n\n[0024] Ein Verfahren zur Herstellung eines granulierten Seltenerdmetall-Legierungspulvers gemäß der vorliegenden Erfindung umfasst die folgenden\n\n\n\nStufen: Herstellung eines Seltenerdmetall-Legierungspulvers; Erzeugung einer remanenten Magnetisierung in dem Pulver; und Granulieren des\n\n\n\nPulvers durch Ausnutzung einer Agglomerationskraft, die durch die remanente Magnetisierung des Pulvers erzeugt wird, um dadurch den vorstehend\n\n\n\nbeschriebenen Gegenstand zu erhalten, worin die Granulierstufe eine Stufe der Herstellung eines granulierten Pulvers mit einer mittleren Teilchengröße\n\n\n\nvon 0,05 mm bis 3,0 mm umfasst.\n\n\n\n\n\n[0025] Die Stufe der Granulierung umfasst vorzugsweise die Stufe der Zuführung einer kinetischen Energie zu den Teilchen des Pulvers und die\n\n\n\nTeilchen wachsen vorzugsweise unter der Einwirkung eines Tumbling-Effekts, der durch die kinetische Energie erzeugt wird, unter einem magnetischen\n\n\n\nFeld von im Wesentlichen Null.\n\n\n\n\n\n[0026] Das Verfahren kann die folgenden Stufen umfassen: Herstellung des Pulvers mit einer remanenten Magnetisierung in einem Behälter; und\n\n\n\nZufuhr einer kinetischen Energie zu den Pulverteilchen unter einem magnetischen Feld von im Wesentlichen Null in dem Behälter. Alternativ kann das\n\n\n\nVerfahren die folgenden Stufen umfassen: Herstellung des Pulvers in einem Behälter; Erzeugung einer remanenten Magnetisierung in dem Pulver\n\n\n\nin dem Behälter durch Anlegen eines magnetischen Feldes an das Pulver; und Zuführung von kinetischer Energie zu den Pulverteilchen mit der\n\n\n\nremanenten Magnetisierung unter einem magnetischen Feld von im Wesentlichen Null in dem Behälter.\n\n\n\n\n\n[0027] Das Verfahren kann ferner eine Stufe der Zugabe eines Granulierungsmittels zu dem Pulver umfassen. Alternativ kann das Verfahren ferner\n\n\n\neine Stufe der Nichtzugabe eines Granulierungsmittels zu dem Pulver umfassen.\n\n\n\n\n\n[0028] Die Stufe der Erzeugung einer remanenten Magnetisierung in dem Pulver umfasst vorzugsweise die Stufe des Anlegens eines\n\n\n\ndemagnetisierenden Wechselfeldes.\n\n\n\n\n\n[0029] Diese Seltenerdmetall-Legierung ist vorzugsweise eine Legierung auf R-Fe-B-Basis, die 2 Massenprozent oder mehr Dy, 1 Massenprozent\n\n\n\noder mehr Tb oder 1 Massenprozent oder mehr Dy und Tb enthält.\n\n\n\n[0030] Das Pulver hat vorzugsweise eine mittlere Teilchengröße von 1,5 &mgr;m bis 6 &mgr;m.\n\n\n\n\n\n[0031] Ein Verfahren zur Herstellung eines Sinterkörpers aus einer Seltenerdmetall-Legierung gemäß der\n\n\n\n\n\nvorliegenden Erfindung umfasst die folgenden Stufen: Herstellung eines granulierten Seltenerdmetall-Legierungspulvers nach einem der vorstehend\n\n\n\nbeschriebenen Verfahren; Füllen eines Hohlraums mit einem Seltenerdmetall-Legierungspulver, welches das granulierte Pulver umfasst, ohne\n\n\n\nAnlegen eines demagnetisierenden magnetischen Feldes an das granulierte Pulver; Herstellung eines Presslings durch Pressen des Seltenerdmetall-\n\n\n\nLegierungspulvers, welches das granulierte Pulver umfasst, unter einem daran angelegten ausrichtenden magnetischen Feld; und Sintern des\n\n\n\nPresslings, um dadurch den vorstehend beschriebenen Gegenstand zu erhalten.\n\n\n\n\n\n[0032] Ein erfindungsgemäßes granuliertes Seltenerdmetall-Legierungspulver ist dadurch charakterisiert, dass es ein Seltenerdmetall-\n\n\n\nLegierungspulver mit einer remanenten Magnetisierung und einer mittleren Teilchengröße von 1,5 &mgr;m bis 6 &mgr;m umfasst, eine mittlere\n\n\n\nTeilchengröße von 0,05 mm bis 3,0 mm hat und mittels einer Agglomerationskraft, die durch die remanente Magnetisierung erzeugt worden ist,\n\n\n\ngebunden (gekoppelt) ist.\n\n\n\n\n\n[0033] Ein Verfahren zur Herstellung eines granulierten Seltenerdmetall-Legierungspulvers nach einer bevorzugten Ausführungsform der\n\n\n\nvorliegenden Erfindung ist dadurch gekennzeichnet, dass es die folgenden Stufen umfasst: (a) Herstellung eines Seltenerdmetall-Legierungspulvers\n\n\n\nmit einer remanenten Magnetisierung in einem Behälter durch Anordnen des Pulvers auf einer Basisplatte, die für Luft durchlässig ist;(b) Erzeugung\n\n\n\neines ersten Gasstromes in dem Behälter, sodass der erste Gasstrom, ausgehend von unterhalb der Basisplatte, nach oben strömt;(c) Zuführung einer\n\n\n\nkinetischen Energie zu den Pulverteilchen mittels des ersten Gasstroms, um dadurch das Pulver zu granulieren unter einem magnetischen Feld, das\n\n\n\nim Wesentlichen Null beträgt, durch Ausnutzung einer Agglomerationskraft, die durch die remanente Magnetisierung des Pulvers erzeugt worden ist\n\n\n\nund eines Tumbling-Effekts, der durch die kinetische Energie erzeugt worden ist;(d) Erzeugung eines zweiten Gasstromes in dem Behälter, sodass der\n\n\n\nzweite Gasstrom, ausgehend von oberhalb der Basisplatte, nach unten strömt; und(e) Bildung einer Pulverschicht aus dem Pulver auf der Basisplatte\n\n\n\nund Komprimieren der Pulverschicht mit dem zweiten Gasstrom.\n\n\n\n\n\n[0034] Das Verfahren ist außerdem dadurch gekennzeichnet, dass mindestens ein Teil der Stufe (d) und mindestens eines Teil der Stufe (b)\n\n\n\ngleichzeitig durchgeführt werden, um dadurch den vorstehend beschriebenen Gegenstand herzustellen.\n\n\n\n\n\n[0035] Bei einer bevorzugten Ausführungsform umfasst der Zeitraum, innerhalb dessen die Stufen (d) und (b) gleichzeitig durchgeführt werden, einen\n\n\n\nZeitraum, innerhalb dessen die Strömungsrate des ersten Gasstromes vermindert wird, während diejenige des zweiten Gasstromes erhöht wird.\n\n\n\n\n\n[0036] Die Stufe (a) kann die Stufen einer Einführung eines Seltenerdmetall-Legierungspulvers ohne remanente Magnetisierung in den Behälter und\n\n\n\ndie Erzeugung einer remanenten Magnetisierung in dem Pulver, das keine remanente Magnetisierung aufweist und in den Behälter eingefüllt worden\n\n\n\nist, umfassen durch Anlegen eines magnetischen Feldes an das Pulver. Alternativ kann die Stufe (a) die Stufen der Herstellung eines Seltenerdmetall-\n\n\n\nLegierungspulvers mit einer remanenten Magnetisierung und des Einfüllens des Pulvers mit der remanenten Magnetisierung in den Behälter umfassen.\n\n\n\n\n\n[0037] Bei einer bevorzugten Ausführungsform werden die Stufen (b), (c), (d) und (e) wiederholt in dieser Reihenfolge mehrmals durchgeführt.\n\n\n\n\n\n[0038] Bei einer anderen bevorzugten Ausführungsform kann das Verfahren ferner eine Stufe (f) umfassen, bei der der erste Gasstrom, abgestoppt\n\n\n\nwird, während der zweite Gasstrom erzeugt wird und dann der zweite Gasstrom abgestoppt wird, während der erste Gasstrom erneut erzeugt wird mit\n\n\n\neiner Strömungsgeschwindigkeit, welche die durchschnittliche Strömungsgeschwindigkeit des ersten Gasstroms in der Stufe (c) übersteigt, wodurch\n\n\n\ndie Pulverschicht, die auf die Basisplatte aufgebracht worden ist, zerkleinert wird. Die Stufe (f) kann mindestens einmal nach der Stufe (e) durchgeführt\n\n\n\nwerden, während die Stufen (b) bis (e) wiederholt durchgeführt werden.\n\n\n\n\n\n[0039] Bei einer anderen bevorzugten Ausführungsform ist die Seltenerdmetall-Legierung eine Legierung auf R-Fe-B-Basis.\n\n\n\n\n\n[0040] Bei einer weiteren bevorzugten Ausführungsform hat das Pulver eine mittlere Teilchengröße von 1,5\n\n\n\n\n\n&mgr;m bis 6 &mgr;m.\n\n\n\n\n\n[0041] Bei noch einer weiteren bevorzugten Ausführungsform wird nach dem Verfahren ein granuliertes Pulver mit einer mittleren Teilchengröße von\n\n\n\n0,05 mm bis 3,0 mm hergestellt.\n\n\n\n\n\n[0042] Ein Verfahren zur Herstellung eines Seltenerdmetall-Legierungssinterkörpers gemäß der vorliegenden Erfindung ist dadurch gekennzeichnet,\n\n\n\ndass es die folgenden Stufen umfasst: Herstellung eines granulierten Seltenerdmetall-Legierungspulvers nach einem der vorstehend beschriebenen\n\n\n\nVerfahren; Füllen eines Hohlraums mit einem Seltenerdmetall-Legierungspulver, welches das granulierte Pulver umfasst, ohne Anlegen\n\n\n\neines demagnetisierenden magnetischen Feldes an das granulierte Pulver; Herstellung eines Presslings durch Pressen des Seltenerdmetall-\n\n\n\nLegierungspulvers, welches das granulierte Pulver umfasst, unter Anlegen eines ausrichtenden magnetischen Feldes daran; und Sintern des\n\n\n\nPresslings.\n\n\n\n\n\n[0043] Eine Vorrichtung zur Herstellung eines erfindungsgemäßen granulierten Seltenerdmetall-Legierungspulvers ist dadurch gekennzeichnet, dass\n\n\n\nsie umfasst: einen Behälter, der eine Basisplatte für die Aufnahme eines Seltenerdmetall-Legierungspulvers aufweist; einen ersten Kanal, der mit dem\n\n\n\nBehälter in Verbindung steht zur Herstellung eines ersten Gasstroms, der von unterhalb der Basisplatte nach oben strömt, in dem Behälter; und einen\n\n\n\nzweiten Kanal, der mit dem Behälter in Verbindung steht zur Erzeugung eines zweiten Gasstromes, der von oberhalb der Basisplatte nach unten strömt,\n\n\n\nin dem Behälter.\n\n\n\n\n\n[0044] Die Vorrichtung ist außerdem dadurch gekennzeichnet, dass der erste und der zweite Kanal unabhängig voneinander mit dem Behälter in\n\n\n\nVerbindung stehen, wodurch das weiter oben beschriebene Ziel erreicht wird.\n\n\n\n\n\n[0045] Die Vorrichtung umfasst vorzugsweise ferner eine Temperaturregel-Einrichtung und ein Gebläse innerhalb des ersten Kanals.\n\n\n\n\n\n[0046] Die Vorrichtung kann ferner einen Puffertank innerhalb des zweiten Kanals umfassen.\n\n\n\n\n\n[0047] Die Vorrichtung umfasst ferner vorzugsweise einen Regelschaltkreis, der ein Thermometer zur Messung der Temperatur des Gases in dem\n\n\n\nBehälter umfasst und den Betrieb des Gebläses mindestens dann stoppt, wenn die gemessene Temperatur eine vorgegebene Temperatur übersteigt.\n\n\n\n\n\n[0048] Innerhalb des Behälters wird vorzugsweise ein positiver Druck aufrechterhalten, während die Vorrichtung in Betrieb ist.\n\n\n\n\n\n[0049] Die Vorrichtung kann ferner eine Einrichtung zur Erzeugung eines magnetischen Feldes umfassen, das an das Pulver angelegt wird, das auf\n\n\n\nder Basisplatte angeordnet ist.\n\n\n\nKurze Beschreibung der Zeichnungen\n\n\n\n\n\n[0050] Fig. 1(a) erläutert in schematischer Form den Aufbau eines granulierten Pulvers gemäß einer bevorzugten Ausführungsform der vorliegenden\n\n\n\nErfindung und Fig. 1(b) und Fig. 1(c) erläutern in schematischer Form den Aufbau konventioneller granulierter Pulver zu Vergleichszwecken.\n\n\n\n\n\n[0051] Fig. 2 erläutert in schematischer Form eine Granulier-Vorrichtung 20  zur Herstellung eines granulierten Pulvers aus einer Legierung auf R-\n\n\n\nFe-B-Basis gemäß einer bevorzugten Ausführungsform der vorliegenden Erfindung.\n\n\n\n[0052] Fig. 3 erläutert in schematischer Form eine Granulier-Vorrichtung 100  zur Herstellung eines granulierten Pulvers aus einer Legierung auf R-\n\nFe-B-Basis gemäß einer anderen bevorzugten Ausführungsform der vorliegenden Erfindung.\n\n\n\n\n\n[0053] Fig. 4(a) und Fig. 4(b) stellen Diagramme dar, die in schematischer Form zeigen, wie sich die (Strömungsgeschwindigkeiten von)\n\n\n\nGasströme(n) in einem Behälter (in Abhängigkeit von der Zeit) verändern in einem Verfahren zur Herstellung eines granulierten Pulvers gemäß einer\n\n\n\nbevorzugten Ausführungsform der vorliegenden Erfindung.\n\n\n\n\n\n[0054] Fig. 5 stellt ein Diagramm dar, das die Remanenzen Br von Sintermagneten zeigt, die aus granulierten Pulvern gemäß spezifischen\n\n\n\nBeispielen der vorliegenden Erfindung hergestellt wurden, und von granulierten\n\n\n\n\n\nPulvern gemäß den Vergleichsbeispielen.\n\n\n\nBeste Art der Durchführung der Erfindung\n\n\n\n\n\n[0055] Nachstehend werden ein Verfahren zur Herstellung eines granulierten Pulvers und ein Verfahren zur Herstellung eines Seltenerdmetall-\n\n\n\nLegierungssinterkörpers gemäß bevorzugten Ausführungsformen der vorliegenden Erfindung unter Bezugnahme auf die beiliegenden Zeichnungen\n\n\n\nbeschrieben. In der nachfolgenden Beschreibung bevorzugter Ausführungsformen werden die Merkmale der vorliegenden Erfindung beschrieben in\n\n\n\nihrer Anwendung auf ein Verfahren zur Herstellung eines Sintermagneten aus einem Pulver einer Legierung auf R-Fe-B-Basis, das unter Anwendung\n\n\n\neines Bandgießverfahrens hergestellt worden ist, das ausgezeichnete magnetische Eigenschaften, jedoch eine geringe Fließfähigkeit aufweist. Die\n\n\n\nvorliegende Erfindung ist jedoch keineswegs auf diese spezifischen bevorzugten Ausführungsformen beschränkt. Stattdessen kann daher auch ein\n\n\n\nSeltenerdmetall-Legierungspulver verwendet werden, das nach einem anderen Verfahren hergestellt worden ist.\n\n\n\n\n\n[0056] Ein Verfahren zur Herstellung eines Sinterkörpers aus einer Legierung auf R-Fe-B-Basis gemäß einer bevorzugten Ausführungsform der\n\n\n\nvorliegenden Erfindung umfasst die folgenden Stufen: Herstellung eines Legierungspulvers auf R-Fe-B-Basis (nachstehend als \"Pulvermaterial\" oder\n\n\n\n\"Primärteilchen-Pulver\" bezeichnet); Erzeugung einer remanenten Magnetisierung in dem Pulvermaterial; Granulieren des Pulvers durch Ausnutzung\n\n\n\neiner Agglomerationskraft, die durch die remanente Magnetisierung des Pulvermaterials erzeugt worden ist; Herstellung eines Presslings durch\n\n\n\nPressen des Legierungspulvers auf R-Fe-B-Basis, welches das granulierte Pulver umfasst, mit einem daran angelegten magnetischen Feld; und\n\n\n\nSintern des Presslings. Durch Magnetisieren des resultierenden Sinterkörpers unter Anwendung eines bekannten Verfahrens kann ein Sintermagnet\n\n\n\nauf R-Fe-B-Basis erhalten werden. Es sei darauf hingewiesen, dass die Magnetisierungsbehandlungsstufe zu jedem beliebigen Zeitpunkt nach dem\n\n\n\nSinterverfahren durchgeführt werden kann. Beispielsweise kann der Verwender des Sintermagneten die Magnetisierungsbehandlungsstufe unmittelbar\n\n\n\nvor der Verwendung des Sintermagneten durchführen. Auch ein nicht-magnetisierter Magnet wird hier als \"Sintermagnet\" bezeichnet.\n\n\n\n\n\n[0057] In einem Verfahren zur Herstellung eines Sinterkörpers aus einer Legierung auf R-Fe-B-Basis gemäß einer bevorzugten Ausführungsform\n\n\n\nder vorliegenden Erfindung wird das Pulver granuliert durch Ausnutzung der Agglomerationskraft, die durch die remanente Magnetisierung des\n\n\n\nPulvermaterials erzeugt worden ist. Es ist daher möglich, entweder die Menge an Granulierungsmittel, das zugegeben werden soll, zu verringern\n\n\n\noder ein Bindemittel mit einer niedrigeren Bindekraft als ein konventionelles Bindemittel zu verwenden. Außerdem kann sogar die Zugabe des\n\n\n\nGranulierungsmittels selbst weggelassen werden.\n\n\n\n\n\n[0058] Nachstehend werden die Merkmale eines Verfahrens zur Herstellung eines granulierten Pulvers und eines daraus resultierenden granulierten\n\n\n\nPulvers gemäß einer bevorzugten Ausführungsform der Erfindung unter Bezugnahme auf die Fig. 1(a), Fig. 1(b) und Fig. 1(c) näher beschrieben. Auf\n\n\n\nder linken Seite der Fig. 1 sind in schematischer Form die Strukturen der jeweiligen granulierten Pulver erläutert. Auf der rechten Seite der Fig. 1 sind\n\n\n\ndie Zustände der jeweiligen granulierten Pulver, an die ein ausrichtendes magnetisches Feld in einem Hohlraum zum Zwecke der Verdichtung angelegt\n\n\n\nworden ist, schematisch erläutert. Die Fig. 1(a) erläutert insbesondere ein granuliertes Pulver 12a  gemäß einer bevorzugten Ausführungsform der\n\n\n\nvorlieg', '生产颗粒状稀土金属的方法和设备本发明涉及生产颗粒状稀土金属的方法和设备\n\n合金粉末和稀土合金烧结体的制造方法。\n\n\n\n\n\n稀土合金烧结磁铁（永磁铁）通常通过压制粉末来制造\n\n稀土合金，烧结所得粉末压实，然后进行时效处理\n\n烧结体。目前广泛用于各种应用的永磁体包括磁体\n\n稀土钴基和稀土铁硼基磁铁。除此之外，磁铁基于稀土 - 铁 - 硼\n\n基体（以下称为“基于R-Fe-B的”磁体，其中R代表包括Y的稀土元素之一，铁的Fe\n\nB代表硼）越来越多地用于各种电子设备中。这是因为R-Fe上的磁铁\n\nB基座的最大能量积高于任何其他类型的磁铁，并且他仍然如此\n\n相对便宜。\n\n\n\n\n\nR-Fe-B基烧结磁体包含主要由四方R2Fe14B化合物组成的主相，a\n\n富R相含有例如Nd和富B相。在R-Fe-B基烧结磁体中，可以通过一部分Fe\n\n可以替换诸如Co或Ni的过渡金属，并且可以用碳（C）代替部分硼（B）。一种基于R-Fe-B的烧结磁体\n\n例如，在美国专利No.4,770,723和4,792,368中描述了可有利地应用本发明的装置。\n\n\n\n\n\n在现有技术中，通过使用生产R-Fe-B基合金作为这种磁体的材料\n\n块铸造过程。在块铸造工艺中，通常使用稀土金属，电解铁和金属\n\n\n\n通过使用感应加热方法将作为各原料的铁硼合金熔化，然后将由此获得的熔体在铸模中相对缓慢地冷却以获得合金锭。\n\n\n\n\n\n最近，快速冷却方法，例如带式铸造方法或离心铸造方法，有很多\n\n在现有技术中发现了注意力。在快速冷却过程中，使熔融合金接触\n\n\n\n通过单个淬火辊，双淬火辊，旋转盘或相对快速冷却\n\n\n\n旋转圆柱形模具的内表面，由此熔融合金来自固化（凝固）合金\n\n\n\n它比合金块更薄。由此制备的固化合金将在下面描述\n\n\n\n被称为“合金薄片”或“合金刀片”。通过使用这种快速冷却方法制成的那些\n\n\n\n合金薄片通常具有约0.03mm至约10mm的厚度。当使用快速冷却过程开始时\n\n\n\n熔融合金从其表面凝固（凝固），与淬火辊表面接触。\n\n\n\n熔融合金的这个表面在本文中称为“辊接触表面”。在快速冷却过程中成长\n\n\n\n因此，从辊接触表面沿厚度方向的柱状晶体。结果，快速凝固的合金，\n\n通过使用带铸法或任何其他快速冷却法制造的结构\n\n\n\n结晶的R2Fe14B相和富R相。结晶R2Fe14B相通常具有约0.1的短轴尺寸\n\n\n\nμm至约100μm，长轴尺寸为约5μm至约500μm。另一方面，富R相是它的所在\n\n\n\n是一种非磁性相，含有较高浓度的稀土元素R和α\n\n\n\n在晶体R 2 Fe 14 B-之间的晶界中，厚度（对应于晶界的宽度）为约10μm或更小\n\n\n\n阶段分散。\n\n\n\n\n\n与通过传统的铸锭铸造方法或模塑方法（例如，铸造方法）生产的合金相比\n\n\n\n合金在本文中称为“铸锭合金”）快速凝固的合金在较短时间内淬火（即\n\n\n\n冷却速度为102°C / s\n\n\n\n\n\n高达104°C / s）。因此，快速凝固的合金具有更精细的结构并且具有更小的晶粒尺寸。此外，在快速\n\n合金的晶粒在更大的面积上固化其晶界，并且富R相分散在晶界内广泛分散。\n\n\n\n因此，快速凝固的合金还表现出富R相的优异分散性。因为合金迅速凝固\n\n\n\n具有上述有利特征的磁铁具有优异的磁性能\n\n\n\n可以生产凝固合金。\n\n\n\n\n\n另一种合金化过程，即所谓的“Ca还原过程（或还原/扩散过程）”\n\n\n\n从现有技术中也已知道。该程序包括以下处理和生产步骤：添加\n\n\n\n金属钙（Ca）和氯化钙（CaCl）或者是至少一种稀土金属氧化物，铁粉，纯的混合物\n\n\n\n硼粉末和至少一种预定比例的硼铁粉末和氧化硼或含有合金粉末的混合物\n\n\n\n或者以预定的比例含有这些组成元素的混合氧化物或混合氧化物;执行减少/\n\n\n\n在惰性气氛中用所得混合物进行扩散处理;稀释所得反应物以进行制备\n\n浆液然后用水处理浆液。这样，R-上的合金固体\n\n\n\n获得Fe-B碱。\n\n\n\n\n\n应该注意的是，每个小块的固体合金在本文中称为“合金块”。该\n\n\n\n“合金块”可以是各种形式的固体合金中的任何一种，不仅包括由其制造的固化合金\n\n\n\n已经获得了合金材料熔体的冷却（例如，合金块，通过常规方法\n\n\n\n铸锭铸造工艺或由快速冷却工艺生产的合金薄片，如带钢铸造工艺\n\n\n\n而且还有通过Ca还原法生产的固体合金。\n\n\n\n\n\n通过进行以下处理步骤获得待压制的合金粉末：粗粉碎\n\n\n\n这些形式之一的合金块通过使用例如氢吸留方法和/或任何一种形式\n\n\n\n各种机械铣削加工（如使用圆盘磨）;并精细粉碎所得的粗糙物\n\n使用干磨法制备粉末（平均粒径为10μm至500μm）\n\n\n\n例如，喷气式粉碎机。\n\n\n\n\n\n待压制的R-Fe-B基合金优选具有1.5μm至约6μm的平均粒径，\n\n\n\n实现足够的机械性能。应该注意的是，这里的粉末的“平均粒径”，如果没有的话\n\n\n\n另一种是FSSS粒径。但是，当使用具有这种低平均粒径的粉末时\n\n\n\n由此产生的流动性，可压性（包括空隙填充密度和可压缩性）和生产率都很差。\n\n\n\n\n\n为了克服这些问题，已经有一种用合金粉末颗粒涂覆表面的方法\n\n\n\n建议使用润滑剂。例如，在日本专利公开No.08-111308和美国专利No.5,666中\n\n\n\n635一种R-Fe-B系微细合金粉末的制造方法（平均粒径为1.5μm~5μm）\n\n通过添加0.02％至5.0％质量的润滑剂（例如，至少一种液化脂肪酸酯）来描述\n\n\n\nR-Fe-B系粗大合金粉末，平均粒径为10μm~500μm，粉碎\n\n\n\n通过喷射磨机在惰性气体中混合物。\n\n\n\n\n\n润滑剂不仅改善了粉末的流动性和可压缩性（或可压缩性），而且还起到了作用\n\n\n\n粘合剂用于增加压块的硬度（或强度）。然而，润滑剂也可以是烧结体中的残余碳\n\n\n\n保持可能降低（降低）磁性的地方。因此，润滑剂必须具有良好的粘合剂\n\n\n\n有可移动性。例如，在日本专利公开No.2000-306753中，优选的润滑剂包括\n\n\n\n良好的解聚聚合物解聚，解聚的聚合物和烃的共混物\n\n\n\n溶剂和解聚聚合物，低粘度矿物油和烃的混合物\n\n溶剂描述。\n\n\n\n\n\n在这种方法中，使用润滑剂，虽然有一定程度的Ver\n\n\n\n\n\n然而，仍然难以用足够均匀或足够程度的粉末填充空腔\n\n\n\n实现可压缩性。其中，使用带式浇铸工艺或任何其他快速粉末的粉末\n\n\n\n已经生产冷却过程（冷却速率为102℃/ s至104℃/ s），平均粒径较小\n\n\n\n与通过块铸法制备的粉末相比，具有更窄的粒度分布，因此特别是\n\n\n\n流动性差。因此，有时容许填充在空腔中的粉末量\n\n\n\n范围或腔填充密度可能不均匀。结果，压块的质量或尺寸的变化可能超过其允许范围，或者压块中可能出现裂缝或碎裂。\n\n\n\n\n\n作为改善R-Fe-B基合金粉末的流动性和压制性的另一种（进一步）方法\n\n已经提出生产粒状粉末。\n\n\n\n\n\n例如，在日本专利公开No.63-237402中描述了可压缩性得到改善\n\n\n\n可以用粒状粉末制备，所述粒状粉末通过添加0.4质量％至4.0质量％的混合物而制备\n\n\n\n将石蜡化合物（在室温下为液体）和脂肪族羧酸盐加入到粉末中并通过研磨和造粒\n\n\n\n相同。其中聚乙烯醇（PVA）用作造粒剂的方法也是已知的。应该指出的是\n\n\n\n造粒剂和作为粘合剂的润滑剂都起到增加压块强度的作用。\n\n\n\n\n\n但是，如果使用日本专利公开No.63-237402中描述的造粒剂，那么\n\n\n\n粘合剂的可去除性很差，以至于由R-Fe-B基合金制成的烧结体的磁性能\n\n\n\n残留在烧结体中的碳劣化。\n\n\n\n\n\n另一方面，通过对PVA应用喷雾干燥法制备的造粒粉末具有一种\n\n结合力高，即使施加外部磁场也不易被完全压碎。\n\n\n\n因此，其初级粒子不能与磁场充分对准并且不能被磁化\n\n\n\n具有优异的磁性。 PVA还具有差的粘合剂去除性和PVA的可去除性\n\n\n\n原始碳倾向于保留在磁铁中。但是，通过执行a可以克服这个问题\n\n\n\n在氢气氛中的粘合剂去除过程。但是，仍然难以充分吸收这种碳\n\n\n\n删除。\n\n\n\n\n\n为了解决即使在对准磁场下造粒粉末难以破碎的问题，也是如此\n\n\n\n本发明的申请人提出了一种生产颗粒状粉末的方法，其中各自的粉末颗粒（即\n\n\n\n与磁粉对齐的各个初级颗粒与造粒剂结合（偶联）\n\n\n\n通过对施加有静电磁场的粉末材料进行造粒（参见日本专利公开出版物\n\n第10-140202号）。当使用这种粒状粉末时，与使用相比，磁性能得到改善\n\n\n\n颗粒状粉末，其中初级颗粒未与施加的磁场对齐，具有a\n\n\n\n造粒剂结合（偶联）。然而，难以用磁场充分挤压压制的粉末颗粒\n\n\n\n对齐尺寸。结果，产生的磁特性比非粒状磁特性差\n\n\n\n使用稀土合金粉末。\n\n\n\n\n\n如上所述，已经提出了各种造粒剂和造粒方法。一个程序\n\n\n\n大量生产稀土合金的粒状粉末，其具有优异的流动性和优异的性能\n\n\n\n可压缩性和有助于生产具有良好磁性的磁体，尚未得到\n\n\n\n开发。\n\n\n\n\n\n另一方面，对更小，更薄和更强大的磁体的需求正在增加。这就是为什么开发一个\n\n一种生产小型或薄型高性能磁体的方法，具有所需的高生产率。通常，这适用于\n\n\n\n加工稀土合金烧结体（或通过磁化烧结体获得的磁体）\n\n\n\n\n\n由于加工引起的应力，其磁性能变差。一\n\n\n\n使用小磁铁时，磁性能的这种恶化是不可忽略的。因此它是较低的\n\n\n\n制造具有高尺寸精度的烧结体更加需要生产的磁体的尺寸\n\n\n\n如果可能的话，不需要加工，并且还要生产最终的形状。一个人的需求\n\n\n\n稀土合金粉末具有优异的流动性和可压制性（例如，尤其如此\n\n\n\n由于这些原因，对于R-Fe-B基合金粉末而言也在增加。\n\n\n\n\n\n此外，从JP 10 140 202 A中已知一种制备具有良好流动性的粉末的方法，其中粉末\n\n通过磁场定向然后造粒。然而，该现有技术不涉及稀土金属的粒化\n\n\n\n合金粉末。\n\n\n\n\n\n由DE 37 80 588 T2已知一种用于制造烧结永磁体的方法。制作这种磁铁\n\n\n\n在该现有技术中提出使用稀土合金粉末。\n\n\n\n发明描述\n\n\n\n\n\n为了克服上述问题，本发明的主要目的是a\n\n\n\n提供一种制备粒状稀土金属合金粉末的方法，该方法具有良好的流动性和良好性\n\n\n\n具有可压缩性并且允许生产具有优异磁性的磁体，以及用于制造磁体的方法\n\n\n\n提供高质量的稀土合金烧结体，具有高生产率。\n\n\n\n\n\n根据本发明的制造粒状稀土金属合金粉末的方法包括以下方法\n\n\n\n阶段：生产稀土合金粉末;在粉末中产生剩余磁化强度;和造粒\n\n通过利用由粉末的剩余磁化产生的凝聚力的粉末，由此得到粉末\n\n\n\n其中造粒步骤包括制备具有平均粒度的造粒粉末的步骤\n\n\n\n从0.05毫米到3.0毫米。\n\n\n\n\n\n造粒步骤优选包括向粉末颗粒提供动能的步骤\n\n\n\n颗粒优选在由动能产生的翻滚效应的作用下在磁效应下生长\n\n\n\n领域基本上为零。\n\n\n\n\n\n该方法可包括以下步骤：在容器中制备具有剩余磁化强度的粉末;和\n\n\n\n在容器中的基本为零的磁场下向粉末颗粒提供动能。或者，那可以\n\n\n\n包括以下步骤的方法：在容器中制备粉末;在粉末中产生剩余磁化强度\n\n\n\n通过向粉末施加磁场在容器中;用粉末颗粒向粉末颗粒提供动能\n\n在容器中基本为零的磁场下的剩余磁化强度。\n\n\n\n\n\n该方法还可包括将造粒剂添加到粉末中的步骤。或者，该方法可以进一步\n\n\n\n不向粉末中添加造粒剂的步骤。\n\n\n\n\n\n在粉末中产生剩余磁化的步骤优选包括施加a的步骤\n\n\n\n退磁交替场。\n\n\n\n\n\n该稀土金属合金优选为含有2质量％以上Dy，1质量％的R-Fe-B系合金。\n\n\n\n或更多Tb或1质量％或更多Dy和Tb。\n\n\n\n粉末的平均粒径优选为1.5μm至6μm。\n\n\n\n\n\n一种稀土合金烧结体的制造方法\n\n\n\n\n\n本发明包括以下步骤：制备根据上述任一项的粒状稀土金属合金粉末\n\n\n\n描述方法;用包含粒状粉末的稀土合金粉末填充空腔而不用\n\n\n\n对造粒粉末施加消磁磁场;通过压制稀土金属生产压块\n\n合金粉末，在施加于其上的取向磁场下包含造粒粉末;和烧结\n\n\n\n压实从而获得上述目的。\n\n\n\n\n\n根据本发明的粒状稀土金属合金粉末的特征在于它是稀土金属合金粉末。\n\n\n\n合金粉末具有剩余磁化强度，平均粒径为1.5微米至6微米\n\n\n\n粒径为0.05mm至3.0mm，并通过剩余磁化产生的团聚力，\n\n\n\n绑定（耦合）是。\n\n\n\n\n\n根据优选实施方案的制造粒状稀土金属合金粉末的方法\n\n\n\n本发明的特征在于包括以下步骤：（a）生产稀土合金粉末\n\n\n\n通过将粉末放在可透气的基板上，在容器中进行剩余磁化;（b）产生\n\n\n\n容器中的第一气流使得第一气流从基板下方向上流动;\n\n通过第一气流向粉末颗粒的动能，从而在磁场下将粉末造粒\n\n\n\n通过利用由粉末的剩余磁化产生的凝聚力，该曲线基本上为零\n\n\n\n以及由动能产生的翻滚效应;（d）在容器中产生第二气流，使得产生第二气流\n\n\n\n从底板上方开始的第二气流向下流动; （e）在基板上形成粉末的粉末层\n\n\n\n用第二气流压缩粉末层。\n\n\n\n\n\n该方法的特征还在于阶段（d）的至少一部分和阶段（b）的至少一部分\n\n\n\n同时进行，从而产生上述目的。\n\n\n\n\n\n在优选的实施方案中，步骤（d）和（b）同时进行的时间段包括一个\n\n\n\n在此期间第一气流的流速减小而第二气流的流速增加。\n\n\n\n\n\n步骤（a）可包括将稀土合金粉末引入容器中而没有剩余磁化的步骤\n\n在粉末中产生剩余磁化，其没有剩余的磁化并且已经填充到容器中\n\n\n\n通过向粉末施加磁场。或者，步骤（a）可包括制备稀土金属的步骤\n\n\n\n包括具有剩余磁化强度的合金粉末和在容器中填充剩余磁化的粉末。\n\n\n\n\n\n在优选的实施方案中，步骤（b），（c），（d）和（e）以此顺序重复进行若干次。\n\n\n\n\n\n在另一个优选的实施方案中，该方法可以进一步包括步骤（f），其中停止第一气流\n\n\n\n在产生第二气流的同时产生第二气流，然后停止第二气流，同时再次产生第一气流\n\n\n\n因此，流速超过步骤（c）中第一气流的平均流速\n\n\n\n将已施加到基板上的粉末层粉碎。步骤（f）可在步骤（e）之后至少执行一次\n\n\n\n而步骤（b）至（e）重复进行。\n\n在另一个优选的实施方案中，稀土金属合金是R-Fe-B基合金。\n\n\n\n\n\n在另一个优选的实施方案中，粉末的平均粒度为1.5\n\n\n\n\n\nμm至6μm。\n\n\n\n\n\n在另一个优选的实施方案中，该方法包括平均粒度为0.5μm的粒状粉末\n\n\n\n0.05毫米至3.0毫米。\n\n\n\n\n\n根据本发明的稀土合金烧结体的制造方法的特征在于\n\n\n\n其包括以下步骤：制备根据上述任一项的粒状稀土金属合金粉末\n\n\n\n法;用包含粒状粉末的稀土合金粉末填充空腔而不施加\n\n\n\n对造粒粉末的去磁磁场;通过压制稀土金属生产压块\n\n\n\n包含造粒粉末的合金粉末，同时向其施加取向磁场;和烧结\n\n\n\n紧凑。\n\n\n\n\n\n根据本发明的用于生产粒状稀土金属合金粉末的设备的特征在于\n\n它包括：容器，具有用于接收稀土合金粉末的基板;与...的第一个频道\n\n\n\n连通容器用于产生从容器中的底板下方向上流动的第一气流;一个\n\n\n\n第二通道与容器连通，用于产生从底板上方向下流动的第二气流，\n\n\n\n在容器中。\n\n\n\n\n\n该装置的特征还在于，第一和第二通道独立于容器\n\n\n\n连接，实现上述目标。\n\n\n\n\n\n该装置优选地还包括温度控制装置和第一通道内的风扇。\n\n\n\n\n\n该装置还可包括在第二通道内的缓冲罐。\n\n\n\n\n\n该装置优选地还包括控制电路，该控制电路包括用于测量气体中温度的温度计\n\n\n\n容器并且至少在测量的温度超过预定温度时停止风扇的操作。\n\n\n\n\n\n在容器内，优选在装置运行时保持正压。\n\n该装置还可以包括用于产生施加到沉积在其上的粉末的磁场的装置\n\n\n\n底板布置。\n\n\n\n附图简要说明\n\n\n\n\n\n图1（a）以示意图形式说明了根据本发明优选实施方案的造粒粉末的结构\n\n\n\n发明和图1（b）和图1（c）以示意图形式说明了用于比较目的的常规粒状粉末的结构。\n\n\n\n\n\n图2以示意图形式示出了用于在R上生产合金的粒状粉末的造粒装置20\n\n\n\n根据本发明优选实施方案的Fe-B碱。\n\n\n\n图3以示意图形式示出了用于由R型颗粒上的合金制造粒状粉末的造粒设备100。\n\n根据本发明另一个优选实施方案的Fe-B碱。\n\n\n\n\n\n图4（a）和4（b）是以示意图形式显示流速的图\n\n\n\n在根据a的制造造粒粉末的过程中，容器中的气流（作为时间的函数）变化\n\n本发明的优选实施方案。\n\n\n\n\n\n图5是表示根据具体的粒状粉末制成的烧结磁体的剩磁Br的曲线图\n\n\n\n制备并制粒本发明的实施例\n\n\n\n\n\n根据比较例的粉末。\n\n\n\n实施本发明的最佳方式\n\n\n\n\n\n在下文中，将描述制造造粒粉末的方法和制备稀土金属粉末的方法。\n\n\n\n参考附图，根据本发明优选实施例的合金烧结体\n\n\n\n描述。在以下优选实施例的描述中，将描述本发明的特征\n\n\n\n它们应用于由使用的R-Fe-B基合金粉末制造烧结磁体的方法\n\n\n\n已经生产出一种条带铸造方法，该方法具有优异的磁性但流动性低。该\n\n\n\n然而，本发明决不限于这些特定的优选实施方案。因此，也可以\n\n可以使用稀土合金粉末，其通过不同的方法制备。\n\n\n\n\n\n根据本发明优选实施方案的制备R-Fe-B基合金烧结体的方法\n\n\n\n本发明包括以下步骤：制备R-Fe-B基合金粉末（以下简称“粉末材料”或\n\n\n\n“初级颗粒粉末”）;在粉末材料中产生剩余磁化强度;通过开发使粉末成粒\n\n\n\n由粉末材料的剩余磁化产生的凝聚力;生产紧凑型\n\n\n\n压制含有造粒粉末的R-Fe-B基合金粉末，并施加磁场;和\n\n\n\n烧结紧凑型。通过使用已知方法磁化所得烧结体，烧结磁体\n\n\n\n以R-Fe-B为基础。应该注意的是磁化处理阶段之后的任何时间\n\n\n\n可以进行烧结过程。例如，烧结磁体的使用者可以立即设置磁化处理阶段\n\n在使用烧结磁铁之前。而且，非磁化磁体在本文中称为“烧结磁体”。\n\n\n\n\n\n在根据优选实施方案的制备R-Fe-B基合金烧结体的方法中\n\n\n\n在本发明中，通过利用由剩余磁化产生的凝聚力将粉末造粒\n\n\n\n已经产生粉末材料。因此可以减少要添加的造粒剂的量\n\n\n\n或者使用具有比常规粘合剂更低粘合力的粘合剂。另外，即使添加了\n\n\n\n造粒剂本身被省略。\n\n\n\n\n\n在下文中，将描述制备造粒粉末并由其造粒的方法的特征\n\n\n\n参考图1（a），图1（b）和图1（c）更详细地描述了根据本发明优选实施方案的粉末。上\n\n\n\n图1的左侧以示意图形式说明，各个粒状粉末的结构。在图1的右侧是\n\n\n\n为了压实的目的，各个粒状粉末的状态在空腔中施加有对准磁场\n\n已经示意性地解释了。特别地，图1（a）示出了根据本发明优选实施方案的粒状粉末12a\n\n\n\n图1（b）表示使用了造粒剂的以往的粒状粉末12b\n\n\n\n图1（c）示出了通过上述日本专利公开No.10-140202中公开的方法获得的造粒粉末12c。\n\n\n\n已经准备好了。\n\n\n\n\n\n如图1（a）所示，在本实施方式的造粒粉末12a中，一次粒子10a具有一个\n\n\n\n剩余磁化通过磁聚集力弱结合在一起（耦合在一起）。在那\n\n\n\n如图所示，据信不需要使用造粒剂。这些初级粒子10a具有剩余\n\n\n\n磁化被磁耦合在一起以形成磁闭合电路和剩余磁化\n\n\n\n粒状粉末12a的粒径非常小（例如，大于约0mT，≤约10mT（毫特斯拉））。在这\n\n\n\n在颗粒状粉末12a中，初级颗粒10a的剩余磁化强度以随机分布取向\n\n粒状粉末12c如图1（c）所示。初级颗粒10a可具有约1.5μm至约6.0的平均粒度\n\n\n\n粒状粉末12a的平均粒径为约0.05mm至约3.0mm。剩余磁化强度\n\n\n\n可以通过将高斯计的探针引入粒状粉末中来测量。\n\n\n\n\n\n\n\n该造粒粉末12a具有平均粒径，并且可以具有优异的流动性。还\n\n\n\n而且，这种粒状粉末12a具有低剩余磁化强度，并且可以容易且均匀地填充在空腔中\n\n\n\n没有桥接。另外，这些Pima颗粒10a仅通过磁聚集力\n\n\n\n绑定（耦合）。因此，如图1（a）的左侧所示，粒状粉末12a可以容易地成为图1中的初级粒子10a\n\n\n\n可以通过施加对准磁场（例如，从约0.1T到约0.8T）来分解。由于它\n\n\n\n例如，像素粒子10a可以与施加的磁场对准。由于粒状粉末12a不含造粒剂，\n\n而且，烧结体中含有的碳量不会增加。通过磁化烧结体获得的磁体\n\n\n\n这种造粒粉末12a具有与没有磁铁的磁铁基本相同的磁特性\n\n\n\n已经制备了粉末材料的颗粒化（剩余磁化强度基本为零）。也就是说，通过使用\n\n\n\n根据本发明优选实施方案的造粒粉末，流动性和可压制性\n\n\n\n可以改善而不会使磁性能恶化。如果需要，当然也可以使用造粒剂\n\n\n\n例如，增加紧凑的强度。由于这种造粒剂用作附加剂，\n\n\n\n造粒剂不需要具有强结合力。可以选择造粒剂的量和类型\n\n\n\n磁性不会受到损害（恶化）。\n\n\n\n\n\n另一方面，通过将粉末材料的初级颗粒10b与造粒剂结合而获得的造粒粉末12b\n\n如图14所示，即使施加如图1（b）所示的对准磁场也未充分压碎\n\n\n\n（分解）是。结果，所得烧结磁体的磁性受损（较差）。相比之下\n\n\n\n对于在不对粉末材料进行造粒的情况下获得的磁体，可以对该烧结磁体的剩余磁化强度进行排序\n\n\n\n损失约1％至约10％。应注意的是，图1（b）所示颗粒的初级颗粒10b的箭头\n\n\n\n省略粉末12b，因为颗粒10b没有剩余磁化强度。\n\n\n\n当通过用造粒剂14将初级颗粒10c彼此粘合和固定来制备造粒粉末12c时\n\n如图1（c）所示，在静磁场的影响下同时对准初级粒子10c，\n\n另外，可以使磁性能的劣化最小化，但是造粒粉末12c不能\n\n完全分解成初级粒子10c。因此，所得烧结磁体的剩余磁化强度大致降低\n\n与未对粉末材料进行造粒而制备的磁体相比，为1％至几％。另外，那会\n\n如图1（c）中示意性所示，粒状粉末12c沿磁极方向伸长，这是不利的。\n\n为了流动性。另外，由于造粒粉末12c具有相对高的剩余磁化强度\n\n粒状粉末12c桥接，除非预先消磁，否则不能填充到空腔中。\n\n\n\n\n\n相反，本发明优选实施方案的粒状粉末12a在图1中几乎是球形的\n\n\n\n它的形状，具有太少的剩余磁化以需要去磁，并且可以容易且均匀地成为一体\n\n\n\n腔体被填满。因此，可以应用所谓的“测量和填充方法”，其中给定质量\n\n\n\n预先确定粒状粉末，然后填充到空腔中。如上所述，造粒粉末12a\n\n\n\n  在本发明的优选实施方案中，表现出优异的流动性和空腔填充性\n\n并且这可以有助于烧结磁体的生产而基本上不影响磁性\n\n\n\n（劣化）得到。\n\n\n\n\n\n根据本发明优选实施方案的造粒粉末通过包括这些步骤的造粒方法获得\n\n\n\n包括：将动能暴露于具有剩余磁化和生长的粉末材料的颗粒\n\n\n\n粒子受到滚动效应的影响，这是由增加的动能产生的。如有必要，a\n\n\n\n如果需要，添加造粒剂。\n\n\n\n\n\n在根据本发明优选实施方案的制造造粒粉末的方法中\n\n\n\n在粉末材料进入之前进行在粉末材料中产生剩余磁化的步骤\n\n\n\n容器的造粒机Vorrich\n\n\n\n\n\n（即，在制粒容器中）或在容器中制备（或填充）粉末材料之后\n\n\n\n是。但是，该优选实施方案的粒状粉末12a的初级颗粒10a彼此粘合（连接）\n\n由剩余磁化产生的磁聚集力的影响。因此，粒状粉末12a被分解\n\n\n\n施加外部磁场时。因此，将颗粒基本上留在磁场中\n\n\n\n零增长。这与如图1（c）所示的制造造粒粉末12c的方法形成对比，其中\n\n\n\n必须连续地施加磁场以使初级颗粒10c对齐，直到颗粒状粉末12最终与之对齐\n\n\n\n造粒剂14已经固定。如本文所用，术语“基本上为零的磁场”是磁场\n\n\n\n要理解的是，它足够脆弱以获得颗粒状粉末，其中形成闭合磁路\n\n\n\n粉末的剩余磁化强度，并且对粉末的剩余磁化强度没有影响。\n\n\n\n\n\n用于产生剩余磁化的磁场可以是几种中的任何一种\n\n\n\n是磁场。由于初级粒子可以具有小的剩余磁化强度，因此优选为a\n\n消磁交替场应用。然而，用于产生剩余磁化的磁场不必是这样的\n\n\n\n也可以是均匀的去磁场，另一种类型的脉冲磁场\n\n\n\n或静磁场。\n\n\n\n\n\n应该注意的是，即使在产生剩余磁化后，粉末材料也很低\n\n\n\n在获得最终的造粒粉末之前，矫顽力可能失去造粒粉末的磁化和形状。为此\n\n\n\n原因是，粉末材料优选具有相对高的矫顽力。特别是，如果一个矫顽力的值\n\n\n\n通过BH示踪剂测量填充在容器中以具有2.0g / cm 3的振实密度的粉末材料\n\n\n\n作为粉末材料的表观矫顽力，粉末材料优选具有至少70kA / m的矫顽力，\n\n\n\n更优选为80kA / m或更高。例如，R-Fe-B基合金优选含有至少2质量％\n\n\n\nDy和至少1质量％Tb或至少1质量％Dy和Tb的组合。\n\n考虑到流动性和可压制性，合金粉末是基于R-Fe-B的，其被压制和压实\n\n\n\n优选仅由如上所述制备的粒状粉末制成。或者，混合物\n\n\n\n造粒粉末和粉末材料（即初级颗粒粉末）。但是，因为粉末材料的百分比\n\n\n\n增加，流动性降低。为了通过造粒以足够的效率改善流动性，存在\n\n\n\n合金粉末优选基本上仅来自造粒粉末。当粉末材料与颗粒混合时\n\n\n\n使用粉末，粉末材料颗粒的表面优选涂有润滑剂。通过涂层\n\n\n\n通过初级颗粒的表面具有润滑剂，可以同时改善R-Fe-B基粉末的流动性\n\n\n\n也可以防止其氧化。另外，当在磁场中压制粉末时，粉末颗粒也可以\n\n\n\n更容易对齐。应该注意的是，不仅粉末基本上只是稀土合金\n\n由（可能具有表面氧化物层），以及含有造粒剂和/或润滑剂的粉末组成\n\n\n\n含有稀土合金粉末并经过致密化处理，这里称为“稀土合金粉末”\n\n\n\n被指定。\n\n\n\n\n\n以下，根据a。由R-Fe-B基合金的烧结体制造磁体的方法\n\n\n\n一步一步地描述了本发明的优选实施例。\n\n\n\n\n\n首先，通过使用流延法制备由R-Fe-B基合金制成的薄片（散热片）（参见图2）。\n\n\n\n例如，美国专利No.5,383,978）。特别是，通过已知方法制备的R-Fe-B基合金\n\n\n\n通过感应加热方法熔化以获得熔融合金。合金上\n\n\n\nR-Fe-B碱也可具有美国专利4,770,723或美国专利4,792,368中所述的组合物。在一个\n\n\n\nR-Fe-B基稀土合金的典型组成，Nd或Pr通常称为R（稀土元素）\n\n一部分Fe可以被过渡金属（例如Co）取代，B的一部分可以被C代替。\n\n\n\n\n\n\n\n将该熔融合金保持在1350℃，然后在这种条件下快速在单辊上进行\n\n\n\n淬火，包括约1m / s的辊子圆周速度，500℃/ s的冷却速率和冷却\n\n\n\n在200℃以下，得到厚度为0.3mm的合金薄片（合金刀片）。通过这个爆发\n\n\n\n通过氢吸留工艺合金薄片，得到粗合金粉末。然后这种粗合金粉末\n\n\n\n通过在氮气气氛中的喷射式粉碎机微粉碎，得到的合金粉末（即粉末材料），其具有1.5微米的平均颗粒尺寸为6微米和大约0.45平方米的比表面积/ g至约0.55平方米/ g，测量\n\n在BET方法之后，收到。该粉末材料的真密度为7.5g / cm3。\n\n\n\n\n\n此后，在如此获得的粉末材料中产生剩余磁化。在这个例子中，a\n\n对其施加1.0T的峰值磁场的交变磁场去磁。\n\n\n\n\n\n随后，用剩余磁化将粉末材料造粒。在该实施例中，采用流化床造粒技术\n\n\n\n应用。在流化床或流化床造粒技术中，颗粒状粉末具有准球形形状并具有\n\n\n\n可以获得足够的硬度。当造粒粉末具有这种近似球形的形状时，是优异的\n\n\n\n可以实现流动性和优异的可压性。另外，造粒剂的硬度与造粒剂相同\n\n\n\n变量。然而，当粒状粉末如上所述太硬或太软时，存在缺点。\n\n\n\n\n\n一种已知的造粒装置20，用于使用流化床或流化床造粒方法造粒粉末\n\n\n\n在图2中示意性地示出了。造粒机20包括风扇鼓风机21，温度和湿度\n\n\n\n控制装置22，液体容器23，切换阀24和反向鼓风机26造粒机20是\n\n优选使用Fuji Paudal Co.，Ltd。的摇摆处理器。\n\n\n\n\n\n首先，使用通过空气流的空气流在液体容器23中进行正常流化\n\n\n\n产生风扇鼓风机21。在这种情况下，空气流在实心箭头所示的正压下\n\n\n\n方向（流化过程阶段）。此后，当切换阀24打开时，空气流动的方向\n\n\n\n通过反向鼓风机26在虚线箭头所示的方向上偏转（固结处理阶段）。在这\n\n\n\n在固结过程阶段，形成粉末层并压制，并且造粒粉末的硬度通过向下\n\n\n\n定向气流增加。另一方面，在流化工艺步骤中，在固结工艺步骤中形成的粉末是\n\n\n\n通过向上气流分解的层（压碎）并产生具有近似球形的粒状粉末\n\n\n\n在流化空气流的研磨作用的影响下。转换阀24可以重复打开。通过控制\n\n通过空气量和循环次数，可以调节造粒粉末的硬度。通过控制持续时间\n\n\n\n造粒也可以调节造粒粉末的平均粒径。\n\n\n\n\n\n在传统的流化床造粒方法中，使向上流动的粉末流化的步骤\n\n\n\n容器中的气流（也称为“粉末流动的方向”）（即流化工艺步骤）和步骤\n\n\n\n通过向下引导的气流压制一层粉末（即，固结工艺步骤）是分开进行的。\n\n\n\n例如，日本专利No.3,019,953中所示的流化和压制设备（见图3）被构造成使得\n\n\n\n用于进行流化过程阶段（此处称为“第一气流”）的气流用于进行气流的气流\n\n\n\n合并过程阶段（此处称为“第二气体流动”）被切换，反之亦然。这样，常规\n\n\n\n装置不会在容器内同时产生这两种气流。\n\n\n\n\n\n本发明的发明人现已通过实验发现并确认了颗粒状稀土金属\n\n通过引入用于进行流化的第一气流，可以以更有效的方式制备合金粉末\n\n\n\n处理阶段与引入第二气流同时进行容器中的固结处理阶段。\n\n\n\n\n\n据信这是由于稀土金属合金的绝对值相对较高\n\n\n\n比重为7.5克/立方厘米和/或照顾颗粒\n\n\n\n\n\n通过使用相对较弱的力，例如粉末。通过剩余磁化。这是由于\n\n\n\n测试结果，根据该测试结果，如果不使用粘合剂，则造粒粉的产率降低，除非\n\n\n\n在第一和第二气流存在于同一容器内之后，进行了固结处理步骤\n\n\n\n然而，当使用粘合剂时，传统和本发明之间没有区别\n\n\n\n找到了程序。尚不完全清楚为什么在第一次和第二次时可以更有效地生产粒状粉末\n\n气流同时存在。\n\n\n\n\n\n以下，根据优选的方法和制造造粒粉末的设备\n\n\n\n参考图3和4更详细地描述了本发明的实施例。\n\n\n\n\n\n参照图3，以示意图形式说明用于生产粒状粉末的装置100的构造，\n\n\n\n这在根据本发明优选实施方案的制造造粒粉末的方法中是有效的\n\n\n\n可以使用发明。图4（a）和4（b）是示意性地示出流量（流量）的图\n\n\n\n在根据a的制造造粒粉末的过程中，气体在容器中流动（随着时间的推移）发生变化\n\n\n\n本发明的优选实施方案。\n\n\n\n\n\n图3中所示的用于生产造粒粉末的设备100包括容器（流化容器）。\n\n\n\n如图30所示，第一通道40（a）与容器30和容器30中的第一上游气流连通\n\n\n\n  第二通道50（b）也与容器30和第二向下的通道连通\n\n容器30中的气流可以产生。第一通道40（a）和第二通道50（b）通过容器彼此独立\n\n\n\n30连接。应注意，附图标记40和50主要用于表示物理\n\n\n\n第一和第二通道的结构，而附图标记a和b主要用于第一和第二通道的气体流动路径\n\n\n\n第一和第二频道。\n\n\n\n\n\n容器30具有这样的结构，即在底部容纳容器62，容器62填充有稀土合金粉末\n\n\n\n充满了。容器62的底板（或底板）62b可透过空气，并且可以例如由网络（网格）或\n\n\n\n面料包括。从工作效率的观点来看，优选使用这种容器62。但它也可以是任何其他结构\n\n\n\n只要容器30包括透气底板，就可以使用。\n\n\n\n\n\n[0083]设置在容器62的底板62b上的稀土合金粉末由第一气流限定，\n\n\n\n当从底板62b向下方向上方流动时，提供必要的能量使其流化。在这种情况下，那将\n\n稀土合金粉末在利用团聚力基本上为零的磁场下进行\n\n\n\n由稀土合金粉末的剩余磁化产生，并且由动力学产生的翻滚效应产生\n\n\n\n产生能量，该能量通过第一气流供应到粉末。另外，在底板62b上形成粉末层\n\n\n\n由于粉末本身和/或第二气流的重量而形成，然后由第二气流压缩\n\n\n\n粉末是固结的。\n\n\n\n\n\n第一通道40包括温度控制器42，鼓风机（例如，鼓风机）44和管道\n\n\n\n通过阀47和48与容器30连接或者与容器30连接，由此限定第一通道46\n\n\n\n其中气体在容器30内循环（参见图3中箭头A1和A2）。去氧化\n\n\n\n在稀土合金粉末中，优选使用惰性气体（例如稀有气体或氮气）。在\n\n\n\n在该实施例中使用氮气。应注意，氧气与总气体的体积比优选设定为0.1％或更低。\n\n如果稀土合金粉末具有过高的温度，则矫顽力和场强也增加\n\n\n\n粉末的凝聚力太大，不易产生粒状粉末。避免这种情况\n\n\n\n和/或为了使稀土合金粉末的氧化最小化，优选将气体温度调节到50℃以内\n\n\n\n在10℃至40℃的范围内，更优选在20℃至40℃的范围内\n\n\n\n\n\n30°C，谎言。可选地，可以提供湿度控制装置，用于从气体中除去水，如果是的话\n\n\n\n是必需的。\n\n\n\n\n\n鼓风机44从温度已由温度控制装置42调节的气体产生第一气流\n\n\n\n是。通过调节容器30的输出来控制容器30内产生的第一气流的流量\n\n\n\n鼓风机44和/或阀门47的开度\n\n\n\n\n\n第二通道50包括缓冲罐52和管道36，并通过阀57和58与容器30连通\n\n\n\n与通道连通（或连接）从而限定第二通道b，该第二通道b使容器30内的气体再循环（参见图3和图4）\n\n在图3中示出了箭头B1和B2）。应该注意的是，缓冲罐50具有主管（例如，a\n\n\n\n工厂氮气管道54通过调节器53连通。容器内产生的流速\n\n\n\n通过调节阀57和58的开度来控制气流。\n\n\n\n\n\n第一通道40的两端和第二通道50的两端都与容器30连通，从而可以与容器30连通\n\n\n\n气体流动路径基本上是封闭的。因此，条件（例如温度和水分含量）可以\n\n\n\n可以有效地控制容器30中的氮气，并且还可以减少氮气的消耗。即使\n\n\n\n系统完全关闭，仍然难以控制气流。因此，最好是一个\n\n\n\n用于通过连接a以预定电阻从容器30排出氮气的构造\n\n\n\n通过阀36排气管34到容器30在这种情况下，排气管64的阻力变得优选\n\n设定使容器30内的压力保持高于容器30外的压力（即大气压），\n\n\n\n至少在操作期间。\n\n\n\n\n\n另外，稀土合金粉末容易被氧化。当稀土合金粉末的温度\n\n\n\n因此，稀土合金粉末甚至会爆炸。这就是为什么内在里面\n\n\n\n优选地，温度计38用于测量容器内的温度。此外，一个是\n\n\n\n控制电路优选地设置为当温度在内时至少停止鼓风机44的操作\n\n\n\n容器30超过预定值。可选地，阀47,48,57,58和66可以是电磁阀和它们\n\n\n\n当容器30内的温度超过预定温度时，可以控制它们关闭。\n\n\n\n根据各种实验的结果，当使用R-Fe-B基合金时，很可能是这样\n\n\n\n在高于50℃的温度下发生快速氧化（可能在火灾或爆炸下）。出于这个原因，\n\n停止操作开始的温度，优选设定为50℃。\n\n\n\n\n\n在容器30中，内径在底部和周围不同以容纳容器62\n\n\n\n从位于底部上方的主体部分开始。如图3所示，内径D1\n\n\n\n容器30的底部小于其主体部分的内径D2。身体部分越接近这一点\n\n\n\n是，内径越大。当使用具有这种结构的容器30时，流速降低\n\n\n\n由容器30中的第一通道40沿向上方向产生的第一气流。因此，粉末，\n\n\n\n由第一气流流化，有效地下降。底部的内径小于\n\n\n\n所述主体部分的内径D2的长度（或高度），其占容器30日的总长度的约20％该\n\n\n\n底部部分的最小内径D1（即，在其上基座板设置62B的部分的内径）可以\n\n例如，占D2的50％左右。\n\n\n\n\n\n用于生产粒状粉末的设备100还可包括用于产生磁性的装置60\n\n\n\n具有可以向容器62中添加磁场的稀土合金粉末。装置60\n\n\n\n  可以产生磁场的电磁铁可以是包括并且优选地能够具有线圈和磁轭的电磁铁\n\n\n\n产生去磁交替场。当稀土合金粉末具有剩余磁化强度时\n\n\n\n使用容器30，当然，可以省略产生磁场的装置60。\n\n\n\n\n\n\n\n接下来，参考图4（a）和4（b），气体如何在容器30中流动将其状态改变为\n\n\n\n在根据本发明优选实施方案制备粒状粉末的过程中。特别是\n\n\n\n图4（a）显示了从操作起点开始的一系列处理步骤（对应于一个循环），而图4（b）显示了\n\n一系列处理步骤（对应于一个循环），包括粉碎处理步骤。\n\n\n\n\n\n首先，参照图4（a），在容器30之后的气流状态是什么\n\n\n\n将填充有剩余磁化稀土合金粉末的容器62设置在设备中的预定位置\n\n\n\n已经使用了100。\n\n\n\n\n\n当使用容器62时，第一气流a的流速a0和流速为\n\n\n\n第二气流b的b0均为零。然后，打开温度控制器42和鼓风机44，阀47和48变为\n\n\n\n打开，由此在容器30中产生第一气流a。第一气流a的流速逐渐增加，\n\n\n\n直到它很快达到平衡流速a1。在这种状态下，粉末变成凝聚力，\n\n\n\n由剩余磁化产生的颗粒化，同时在容器30中受到翻滚效应。\n\n\n\n同时，一部分粉末布置在容器30的中心周围（包括颗粒状颗粒）\n\n在第一气流a上逆着重力旋转，而另一部分粉末在其内壁周围旋转\n\n\n\n容器30布置在流速低的地方，由于其自​​身重量下降。\n\n\n\n\n\n当第一气流a的流速持续预定的时间段（例如，约20分钟）时\n\n\n\n当阀门57和58保持基本恒定时，阀门57和58打开以产生第二气流b\n\n\n\n起点b1处的流量开始。第二气流b的流速逐渐增加。\n\n\n\n但是，在第二气流b的流速达到其平衡流速b2之前，\n\n\n\n第一气流的流速降低a（流速在起始点a2）。就是这样\n\n\n\n是一个周期内，所述第一气体的流速流a减小，而第二Gasstromesb增加（即，如图2所示A2和B2之间的时间段。图4（a））。如果第一气流a和第二气流b\n\n在同一容器30中，以这种方式一段时间，可以得到粒状稀土合金粉末\n\n以更有效的方式生成。原因尚不清楚。似乎当第一气流a突然停止或\n\n如果第二气流b的流速比第一气流a的流速高得多，则颗粒状粉末也是如此\n\n它迅速下降，颗粒状粉末由于冲击而破碎成碎片。另外，当第二气流b，其中\n\n在第一气流a完全停止后，开始生产，产生容器30中的负压，从而产生负压\n\n更难以控制压力，这是不利的。\n\n\n\n\n\n如上所述，当第二气流b的流速在期间逐渐增加时\n\n\n\n随着第一气流a的流速逐渐降低，颗粒状粉末不会因此而破碎成碎片\n\n\n\n冲击时，当它落下时撞击底板62，但在其上形成粉末层。在那之后，\n\n粉末层由第二气流b压缩和固结。由于这种固结过程，硬度\n\n\n\n粒状粉末也是。\n\n\n\n\n\n通过重复图4（a）所示的循环，可以获得具有足够硬度的造粒粉末。是的\n\n\n\n然而，此指出在所述第二周期的开始点在下面的循环的第一气体流A的流速不\n\n\n\n零值（A0）需要有，如图4（a）所示，但A3的图2中的结束点的流动速度。图4（a）中所示\n\n\n\n周期可以是一样的。\n\n\n\n\n\n[0098]然而，仅通过4重复该循环，如图（a）中，粉末层，其在该底板62b的压缩\n\n\n\n没有充分粉碎，并且可以形成具有过大粒径的颗粒。所以，嗯\n\n\n\n进行更可靠，这是优选进行中所示循环粉碎粉末层4（b）中。\n\n\n\n\n\n在下文中，将描述从点b1\'执行的处理步骤，如图4（b）所示。\n\n\n\n\n\n显示，描述。在以下示例中，在点b1执行的处理步骤，如图4（a）所示，\n\n如图4（b）所示，直到这一点b1\'也被执行，然后显示图4（b）所示的那些。\n\n\n\n执行流程步骤。\n\n\n\n\n\n如上所述，开始产生第二气流b（在起始点处的流速b1\'）\n\n\n\n描述。在第二气流b的流速达到其平衡流速b2\'之前，它开始\n\n\n\n降低第一气流a的流速（从起始点的流速a2\'）。在那之后，\n\n\n\n阀47和48关闭，以第一气体流（用于α-最少时间点A3“和A4”之间，如图4（a））的停止\n\n\n\n持有。同时，当鼓风机44已经运转时，管道46的一部分位于鼓风机之间\n\n\n\n如图44所示，阀47和气体压力升高。\n\n\n\n\n\n换句话说，阀47应保持关闭直到用于粉碎粉末层的预定压力\n\n\n\n可以实现。然后，通过关闭阀门57和58（在图4（b）中的点b0\'处）停止第二气流b。\n\n通过打开阀47和48产生第一气流a（如图4（b）所示的点a0\'）。在这\n\n\n\n情况超过了在储存器30中产生的第一气流a的流速a0\'，即平衡\n\n\n\n第一气流a的流速a1（= a2），如图4（a）所示，由此可以有效地添加粉末层\n\n\n\n切末。为了引起翻滚效应，第一气流a的流速通常是基本上的\n\n\n\n保持常数（a1 = a2），如图4（a）所示，但它可以是可变的。在这种情况下，第一个流量\n\n\n\n用于粉碎粉末层的气流a优选高于第一气流a的平均流速，\n\n\n\n引起翻滚效应。\n\n\n\n\n\n在上述示例中，通过操作产生具有流速a0\'的第一气流a\n\n\n\n阀门57和58。或者，也可以通过控制来调节第一气流a的流速\n\n\n\n鼓风机44的吹风能力。但是，也可以将吹风能力控制与阀门控制相结合。它\n\n应该注意的是，流速a1\'和a2\'，如图4（b）所示，每个都可以是相同的\n\n\n\n流速a1和a2如图4（a）所示。\n\n\n\n\n\n当利用剩余磁化形成的造粒粉末的尺寸具有一定的尺寸时\n\n\n\n已达到值，然后产生闭合磁路并且颗粒之间的磁吸引力\n\n\n\n粉末减少。在这种情况下，不再需要图4（b）所示的破碎循环。因此，在一种方法中\n\n\n\n通过重复进行图4（a）所示的基本循环和图4（a）所示的基本循环，可以得到预定的造粒粉末。\n\n\n\n图4（b）总共30个循环，例如5到10个粉碎循环，优选在前20个循环中\n\n\n\n包括在内。\n\n\n\n\n\n应当注意，当使用具有剩余磁化强度的这种粉末材料时，a\n\n\n\n给定的粒状粉末可以在比a的情况下更短的时间内（例如，在一半的时间内）获得\n\n使用粉末材料而没有剩余磁化。据信，这是因为当a\n\n\n\n这种粉末材料使用剩余磁化，用于形成造粒粉末的种子容易产生\n\n\n\n初级颗粒之间的磁聚集力。\n\n\n\n\n\n造粒粉末的平均粒径为0.05mm至3.0mm。普通的粒状粉末包括少数\n\n\n\n初级颗粒和非常大量的三级和其他更高级的颗粒。二次粒子的平均粒径\n\n\n\n可以认为是基本上代表造粒粉末的平均粒度的那种。在这个例子中\n\n\n\n例如，通过显微镜测定的二次粒子的平均粒径是粒化粉末的平均粒径\n\n\n\n使用。如果造粒粉末的平均粒径 3mm，则空间填充能力降低，并且也是足够的均匀压实\n\n\n\n密度几乎无法获得。造粒粉末特别优选具有0.1mm至2.0mm的平均粒径。\n\n\n\n\n\n此后，通过压制和压缩由此获得的压块来制造压块\n\n\n\n\n\n颗粒状粉末。在该实施例中，压块仅由粒状粉末制成。压缩方法可以用\n\n\n\n执行已知的按压装置。通常，使用用于将粉末压入模具的单轴压制装置。\n\n\n\n与上冲头和下冲头一起使用的腔体（或模腔中）。粒状粉末可以用非常气密的容器分批输送，例如用氮气填充或供给氮气。\n\n\n\n\n\n将粒状粉末填充在单轴压制装置的模腔中。颗粒状填充阶段\n\n\n\n如日本专利公报中所述，空腔中的粉末可以用筛子或进料箱进行\n\n对于反对号59-40560，日本专利公开号10-58198，日本实用新型公报No.Hei。\n\n\n\n63-110521或日本特许公开No.2000-248301。这些文件中描述的程序\n\n\n\n这里统称为“下车程序”。\n\n\n\n\n\n特别地，在小型坯块的生产中，粒状粉末优选在空腔中具有这样的量\n\n\n\n填充，其对应于腔的体积含量。例如，一个进料盒底部有一个开口\n\n\n\n输送空腔以使粒状粉末在重力作用下（即，自身）落下，并且\n\n\n\n然后剥去溢出空腔的过量颗粒状粉末。这样，给定量\n\n\n\n粒状粉末相对均匀地填充。当然可以分别确定粒状粉末然后\n\n\n\n例如，在腔体中填充漏斗。\n\n\n\n\n\n在以这种方式用粒状粉末填充空腔之后，单轴压力机的上冲头\n\n降低装置以关闭腔开口。然后，对其施加对准磁场，从而对其施加\n\n\n\n颗粒状粉末破碎成初级颗粒，初级颗粒与施加的磁场对齐。颗粒状\n\n\n\n本发明的该优选实施方案的粉末可以按照预期使用，具有相对弱的磁性\n\n\n\n0.1T至0.8T的场分解为初级粒子。但是，为了获得足够的取向度，优选\n\n\n\n施加约0.5T至约1.5T的磁场。磁场的方向可以例如垂直于按压方向\n\n\n\n运行。当施加时，粉末在例如98MPa的压力下单轴地放置在上冲头和下冲头之间\n\n\n\n以这种方式按压磁场。结果，具有比重的压块（即，比率之间的比率）\n\n\n\n密度和真密度）为0.5至0.7。必要时，磁场的方向平行\n\n\n\n按方向运行。\n\n\n\n\n\n此后，将所得压坯在约1000℃至约1180℃的温度下加热约1小时至约6小时。\n\n真空或在惰性气氛中烧结。该优选实施方案的粒状粉末根本不含有\n\n\n\n造粒剂或少量造粒剂，由于烧结过程，它基本上可以除去。它\n\n\n\n因此不需要提供单独的粘合剂去除工艺。应该注意的是传统的\n\n\n\n在惰性气氛中，在约200℃至约800℃的温度下，典型的粘合剂去除过程约3小时至约6小时\n\n\n\n气氛在约2Pa的压力下进行。\n\n\n\n\n\n然后，将所得烧结体在约450℃至约800℃的温度下进行时效处理约1小时\n\n\n\n约8小时，得到R-Fe-B系烧结磁铁。随后，基于R-Fe-B的烧结磁体\n\n\n\n通过在任何阶段磁化它作为最终产品。根据本发明，具有颗粒状粉末\n\n\n\n如上所述的优异的流动性和可压性。因此，粒状粉末可以高度均匀\n\n腔体充满了填充量的微小变化。结果，质量和尺寸受到限制\n\n\n\n在压制过程中获得的压块仅有轻微的变化。在压块中发生几乎不开裂或碎裂。\n\n\n\n\n\n另外，在根据该优选实施方案的造粒粉末中，初级颗粒基本上通过\n\n\n\n将剩余磁化产生的磁聚集力保持在一起。因此，通过申请\n\n\n\n将磁场与颗粒状粉末对准，将其分解成所需程度的初级颗粒。关闭程度\n\n\n\n\n\n因此，初级颗粒的方向永远不会减少。此外，可以最小化磁特性的损害\n\n\n\n如果造粒剂的碳保留在烧结体中，则会发生这种情况。结果，烧结磁体具有优异的性能\n\n\n\n获得磁性。结果，根据本发明，由合金制成的高质量烧结磁体\n\n\n\n可以以高生产率生产R-Fe-B基料。\n\n通过以下实施例进一步描述本发明。\n\n\n\n\n\n以下列方式制备R-Fe-B基合金粉末：制备熔融合金\n\n\n\n使用含有99.9％纯度电解铁的硼铁合金，使用19.8％\n\n\n\n质量百分比B和Nd和Dy作为各自的原料具有99.7％或更高的纯度。由这种熔融合金制成\n\n\n\n基于R-Fe-B系薄片从基于合金制备，其中使用带式铸造法，其中有一个组合物\n\n\n\n含有30.0质量％Nd，5.0质量％Dy，64.0质量％Fe和1.0质量％B。这些合金薄片都在\n\n\n\n使用惰性气体（例如，具有58.8 MPa的气体压力N2气）中喷射磨机以获得具有粉末材料微粉碎\n\n\n\n平均粒径为3μm。\n\n\n\n\n\n此后，通过应用a，在该具体实例的粉末材料中产生剩余磁化\n\n\n\n退磁交替场（峰值施加磁场为1.0T）。\n\n随后，通过使用流化床造粒方法（使用）制备造粒粉末\n\n\n\n例如，由Fuji Paudal Co.，Ltd。制造的摇摆处理器。用于制备粒状粉末\n\n\n\n实施例2和3以及比较例2和3，聚登链和异链烷烃用作造粒剂，如U.S.P.\n\n\n\n在日本专利申请No.2001-96572中描述了本申请的申请人。在每个具体的例子中\n\n\n\n在本发明中，在每个对比例中，定义各种条件以使得到的颗粒状物\n\n\n\n粉末的平均粒径为0.5毫米。由此获得的造粒粉末具有约0.2mT的剩余磁化强度。\n\n\n\n在实施例1,2和3中，造粒处理步骤的性能花费约15分钟。在比较例2和3中\n\n\n\n另一方面，完成造粒工艺步骤花费约30分钟。应该注意粉末材料（a\n\n\n\n在没有造粒的情况下使用比较例1中获得的没有施加磁场的情况。\n\n下面的表1总结了在实施例1,2和3以及在实施例中压制粉末的条件\n\n\n\n制备比较例No.1,2和3。\n\n\n\n\n\n表1还显示了待压制的各个粉末的休止角。一种具有大角度休息点的粉末\n\n\n\n流动性差。休止角越小越好\n\n\n\n\n\n是流动性。在比较例1中，其中粉末材料未被造粒，休止角达到约52°\n\n\n\n流动性很差。相反，在每个实施例No.1,2和3以及比较例2和3中，其中\n\n\n\n粉末造粒，休止角小于50°。其中，根据实施例1和2的待压制粉末具有较小的休止角，并且它们具有比待压制粉末更好的流动性，这是比较例2（美国）。\n\n添加1质量％的造粒剂）。也就是说，可以看出，通过利用剩余磁化强度\n\n即使添加比常规量更少量的造粒剂，也可以改善流动性。是的\n\n注意，在实施例3和比较例3中，其中造粒剂的加入量为2质量％\n\n在流动性方面没有发现差异。\n\n\n\n\n\n将表1中所示的每种待压制粉末放入长度为20mm，宽度为15的空腔中\n\n\n\n使用如上所述使用进料箱的方法，使用mm和10mm的深度\n\n\n\n然后进行单轴压制和压实（在98MPa的压力下并施加对准磁性）\n\n\n\n垂直于压力方向的场为0.8 T）。这些填充和压实压制阶段在所有条件下都处于相同的条件下\n\n\n\n进行了发明实施例和比较实施例。应该指出的是具有不同密度的压块（即\n\n\n\n在改变压榨条件下获得绿色密度。\n\n\n\n\n\n相对于质量的变化（％）和相对于所得到的填充密度的变化（σ）\n\n\n\n对实施例1和比较例1估计压制。质量之间的波动\n\n根据等式{（最大质量 - 最小质量）/平均质量（n = 50）}×100（％）计算压制。\n\n\n\n\n\n另外，相对于填充密度的波动（σ）表示50个压块的质量分布的标准偏差\n\n\n\n在实施例1中，压块之间的质量变化约为5％，因此明显低于此\n\n\n\n比较例1中相对于质量约15％的变化。在波动（σ）中也观察到这种趋势。\n\n\n\n参考填充密度。具体地，比较例1中相对于填充密度的变化（σ）约为0.33，\n\n\n\n而实施例1中相对于填充密度的变化（σ）仅为0.18。可以看出流动性\n\n\n\n通过造粒改善了。当然，通过造粒也可以改善压制性。开裂的百分比\n\n\n\n在实施例1的颗粒中发现的碎片或碎片远低于比较例9中的碎片\n\n\n\n在其他实施例中也证实了造粒效果。\n\n将得到的每个压块在Ar气氛中在1060℃下烧结约4小时，然后在600℃下烧结1小时\n\n\n\n进行时效处理，得到烧结体。此后，该烧结体进一步以2 387kA / m磁化\n\n\n\n获得烧结磁体。对于根据本发明和对比例的每个实施例，获得50个样品。\n\n\n\n\n\n图5显示了所得烧结磁体的剩磁Br（T）。如图5所示，实际上没有区别\n\n\n\n实施例1的Br（图5中的实心圆圈表示）和比较例1的Br（图5中的空心圆圈）\n\n\n\n显示）检测的。因此，烧结磁体具有优异的磁性。实施例2和3的Br，其中a\n\n\n\n加入造粒剂与加入相同量造粒剂的对比例2或3大致相同\n\n\n\n然而，其中使用粉末材料而没有剩余磁化。即使用粉末造粒粉末也是如此\n\n\n\n在剩余磁化强度方面，优选以尽可能小的量添加造粒剂。\n\n如上所述，通过利用磁性凝聚力制备粒状粉末\n\n\n\n即使加入的造粒剂的量减少，也可以通过初级颗粒的剩余磁化产生\n\n\n\n将制备造粒粉末的情况与单独使用造粒剂的偶联力进行比较\n\n\n\n达到至少相同程度的流动性。因此，烧结磁铁，bes bes\n\n\n\n\n\n它们的磁性必须至少与传统烧结磁体的生产率相同。如果一个\n\n\n\n颗粒状粉末仅利用初级颗粒的剩余磁化强度制成，也可能导致劣化\n\n\n\n基本上消除了磁性。\n\n\n\n\n\n接下来，通过使用制备造粒粉末的实施例4至6\n\n\n\n制造装置100。而且，使用与实施例1至3中使用的相同的粉末材料。\n\n\n\n\n\n容器30的内径D2为300mm，体积含量为约7×104cm 3。在图4（a）和图4中。\n\n图4（b）是流量A1 = A2 = A1 \'= A2\' 约1米3 /分钟，流速A0“为约2.0米3 /分钟和\n\n\n\n流速b2 = b3 = b2\'= b3\'约为0.75m3 / min。加入约5千克稀土合金粉末\n\n\n\n将氮气温度调节至约30℃。\n\n\n\n\n\n为了制备代表实施例5和6的粒状粉末，使用聚丁烯和异链烷烃作为\n\n\n\n本申请的受让人在日本专利申请No.2001-96572中描述的造粒剂和如何\n\n\n\n在实施例2和3中。在实施例5和6中，还定义了各种条件以使颗粒状\n\n\n\n粉末的平均粒径为0.5毫米。所得粒状粉末的剩余磁化强度约为0.2mT\n\n\n\n上。在实施例4至6中，造粒过程进行约15分钟。在下表2中是条件\n\n\n\n总结了制备待压制的粉末，并给出了实施例4至6的休止角。\n\n从表2中可以看出，代表实施例4和5的待压制粉末具有更小的粉末\n\n\n\n作为待压制粉末的静止角度，其代表实施例1和2。通过使用制造设备100\n\n\n\n  因此，流动性得到进一步改善。然而，通过使用制造设备10实现的优点不是那么多\n\n\n\n减少休止角，作为造粒过程稳定性（或再现性）的改进。例如，发现了\n\n\n\n与所得颗粒状粉末中休止角的变化相比，实施例1中的静止角\n\n\n\n45°到49°，而实施例4中的静止角变化很小，即从44°到45°。如果如图2所示已知\n\n\n\n在日本专利公开No.3 019 953中描述的制粒装置或制粒装置（参见该出版物的图3）\n\n\n\n使用时，将粉末在容器中的上升气流中旋转的过程步骤（即\n\n\n\n流化工艺步骤）和用向下的气流压缩粉末层的工艺步骤（即\n\n整合过程步骤）作为两个独立的过程步骤。但是，本发明的发明人具有\n\n\n\n发现用稀土金属合金制成的粒状粉末可以更有效地生产\n\n\n\n制造装置100，使第一气流实现Aufwirbelungsverfahrensstufe和第二气流进行\n\n\n\n同一容器中的合并过程阶段同时存在。除其他外，如果没有，则实现了显着的效果\n\n\n\n如实施例4中所示使用造粒剂。\n\n\n\n\n\n使用代表表2中的实施例4至6的待压制粉末，如下制备压块\n\n\n\n实施例1和质量波动（％）和填充密度（σ）之间的变化\n\n\n\n对这些压块进行了评估。该\n\n\n\n\n\n实施例4的压制品具有约4％的质量变化，甚至低于实施例1中的压力。对于填充密度（σ）的变化也观察到相同的趋势。特别是，填充密度的波动可以\n\n实施例4的（？）可以提高到0.16。颗粒的质量变化（％）和填充密度变化（σ），\n\n代表实施例5和6的实施例至少与实施例2和3的那些相当。\n\n\n\n\n\n将代表实施例4至6的每个压块在Ar气氛中在1060℃下烧结约4小时，并且\n\n\n\n然后在600℃下进行时效处理1小时，得到烧结体。之后，该烧结体成为\n\n\n\n进一步以2 387kA / m磁化以产生烧结磁体。对于实施例4至6中的每一个，获得50个样品。该\n\n\n\n代表实施例4,5和6的烧结磁体的剩磁Br（T）大约等于实施例No.1,2的那些。\n\n\n\n和3个人。通过使用制造装置100，可以以比以后更恒定的方式生产造粒粉末\n\n\n\n传统方法。因此，可以获得具有较少量造粒剂的造粒粉末\n\n\n\n常规方法（或甚至不使用造粒剂）。结果，可以获得更好的烧结磁体\n\n与常规烧结磁体相比，磁性能（例如，包括但不限于更好的剩磁Br）。\n\n\n\n工业适用性\n\n\n\n\n\n本发明涉及一种制造颗粒状稀土金属合金粉末的方法，该方法是一种良好的方法\n\n\n\n具有流动性和良好的可压性，并且能够生产具有优异磁性的磁体\n\n\n\n属性。本发明还涉及一种生产高质量稀土合金烧结体的方法\n\n\n\n通过使用这种粒状粉末的生产率。\n\n\n\n\n\n在本发明中，可以在不使用的情况下提高稀土合金粉末的流动性和压制性\n\n\n\n磁性（恶化）。这样，即使是烧结磁铁也太复杂了\n\n\n\n压制成一定形状并稍微压缩，并在一定程度上压缩其磁性\n\n\n\n现有技术牺牲的，也具有改善的磁性能。另外，造粒时间\n\n可以缩短并且可以省略粘合剂去除方法。结果，稀土金属的生产率\n\n\n\n烧结磁铁增加。');
INSERT INTO `os_patent_instruction_text` VALUES (12971, 22800, 'TECHNICAL FIELD\n\n[0001]The present invention relates to a method and machine of making a rare-earth alloy granulated powder and a method of making a rare-earth alloy sintered body.\n\nBACKGROUND ART\n\n[0002]A rare-earth alloy sintered magnet (permanent magnet) is normally produced by compacting a powder of a rare-earth alloy, sintering the resultant powder compact and then subjecting the sintered body to an aging treatment. Permanent magnets currently used extensively in various applications include rare-earth-cobalt based magnets and rare-earth-iron-boron based magnets. Among other things, the rare-earth-iron-boron based magnets (which will be referred to herein as “R—Fe—B based magnets”, where R is one of the rare-earth elements including Y, Fe is iron, and B is boron) are used more and more often in various electronic appliances. This is because an R—Fe—B based magnet exhibits a maximum energy product, which is higher than any of various other types of magnets, and yet is relatively inexpensive.\n\n[0003]An R—Fe—B based sintered magnet includes a main phase consisting essentially of a tetragonal R2Fe14B compound, an R-rich phase including Nd, for example, and a B-rich phase. In the R—Fe—B based sintered magnet, a portion of Fe may be replaced with a transition metal such as Co or Ni and a portion of boron (B) may be replaced with carbon (C). An R—Fe—B based sintered magnet, to which the present invention is applicable effectively, is described in U.S. Pat. Nos. 4,770,723 and 4,792,368, for example.\n\n[0004]In the prior art, an R—Fe—B based alloy has been prepared as a material for such a magnet by an ingot casting process. In an ingot casting process, normally, rare-earth metal, electrolytic iron and ferroboron alloy as respective start materials are melted by an induction heating process, and then the melt obtained in this manner is cooled relatively slowly in a casting mold, thereby preparing an alloy ingot.\n\n[0005]Recently, a rapid cooling process such as a strip casting process or a centrifugal casting process has attracted much attention in the art. In a rapid cooling process, a molten alloy is brought into contact with, and relatively rapidly cooled by, a single chill roller, a twin chill roller, a rotating disk or the inner surface of a rotating cylindrical casting mold, thereby making a solidified alloy, which is thinner than an alloy ingot, from the molten alloy. The solidified alloy prepared in this manner will be referred to herein as an “alloy flake”. The alloy flake produced by such a rapid cooling process usually has a thickness of about 0.03 mm to about 10 mm. According to the rapid cooling process, the molten alloy starts to be solidified from its surface that has been in contact with the surface of the chill roller. That surface of the molten alloy will be referred to herein as a “roller contact surface”. Thus, in the rapid cooling process, columnar crystals grow in the thickness direction from the roller contact surface. As a result, the rapidly solidified alloy, made by a strip casting process or any other rapid cooling process, has a structure including an R2Fe14B crystalline phase and an R-rich phase. The R2Fe14B crystalline phase usually has a minor-axis size of about 0.1 μm to about 100 μm and a major-axis size of about 5 μm to about 500 μm. On the other hand, the R-rich phase, which is a non-magnetic phase including a rare-earth element R at a relatively high concentration and having a thickness (corresponding to the width of the grain boundary) of about 10 μm or less, is dispersed on the grain boundary between the R2Fe14B crystalline phases.\n\n[0006]Compared to an alloy made by the conventional ingot casting process or die casting process (such an alloy will be referred to herein as an “ingot alloy”), the rapidly solidified alloy has been quenched in a shorter time (i.e., at a cooling rate of 102° C./s to 104° C./s). Accordingly, the rapidly solidified alloy has a finer structure and a smaller crystal grain size. In addition, in the rapidly solidified alloy, the grain boundary thereof has a greater area and the R-rich phase is dispersed broadly and thinly over the grain boundary. Thus, the rapidly solidified alloy also excels in the dispersiveness of the R-rich phase. Because the rapidly solidified alloy has the above-described advantageous features, a magnet with excellent magnetic properties can be made from the rapidly solidified alloy.\n\n[0007]An alternative alloy preparation method called “Ca reduction process (or reduction/diffusion process)” is also known in the art. This process includes the processing and manufacturing steps of: adding metal calcium (Ca) and calcium chloride (CaCl) to either the mixture of at least one rare-earth oxide, iron powder, pure boron powder and at least one of ferroboron powder and boron oxide at a predetermined ratio or a mixture including an alloy powder or mixed oxide of these constituent elements at a predetermined ratio; subjecting the resultant mixture to a reduction/diffusion treatment within an inert atmosphere; diluting the reactant obtained to make a slurry; and then treating the slurry with water. In this manner, a solid of an R—Fe—B based alloy can be obtained.\n\n[0008]It should be noted that any small block of a solid alloy will be referred to herein as an “alloy block”. The “alloy block” may be any of various forms of solid alloys that include not only solidified alloys obtained by cooling a melt of a material alloy (e.g., an alloy ingot prepared by the conventional ingot casting process or an alloy flake prepared by a rapid cooling process such as a strip casting process) but also a solid alloy obtained by the Ca reduction process.\n\n[0009]An alloy powder to be compacted is obtained by performing the processing steps of: coarsely pulverizing an alloy block in any of these forms by a hydrogen occlusion process, for example, and/or any of various mechanical milling processes (e.g., using a disk mill); and finely pulverizing the resultant coarse powder (with a mean particle size of 10 μm to 500 μm) by a dry milling process using a jet mill, for example.\n\n[0010]The R—Fe—B based alloy powder to be compacted preferably has a mean particle size of 1.5 μm to about 6 μm to achieve sufficient magnetic properties. It should be noted that the “mean particle size” of a powder refers to herein an FSSS particle size unless stated otherwise. However, when a powder with such a small mean particle size is used, the resultant flowability, compactibility (including cavity fill density and compressibility) and productivity will be bad.\n\n[0011]To overcome this problem, a method of coating the surface of alloy powder particles with a lubricant was proposed. For example, Japanese Laid-Open Publication No. 08-111308 and U.S. Pat. No. 5,666,635 disclose the technique of making an R—Fe—B based alloy fine powder (with a mean particle size of 1.5 μm to 5 μm) by adding 0.02 mass % to 5.0 mass % of a lubricant (including at least one liquefied fatty acid ester) to an R—Fe—B based alloy coarse powder with a mean particle size of 10 μm to 500 μm and then pulverizing the mixture by a jet mill within an inert gas.\n\n[0012]The lubricant not only improves the flowability and compactibility (or compressibility) of the powder but also functions as a binder for increasing the hardness (or strength) of the compact. Nevertheless, the lubricant may also remain as residual carbon in the sintered body to possibly deteriorate the magnetic properties. Accordingly, the lubricant needs to exhibit good binder removability. For example, Japanese Laid-Open Publication No. 2000-306753 discloses, as preferred lubricants with good binder removability, depolymerized polymers, mixtures of a depolymerized polymer and a hydrocarbon solvent, and mixtures of a depolymerized polymer, a low-viscosity mineral oil and a hydrocarbon solvent.\n\n[0013]According to this method using a lubricant, however, a certain degree of improvement is achieved but it is still difficult to fill the cavity with the powder sufficiently uniformly or achieve a sufficient degree of compactibility. Among other things, a powder made by a strip casting process or any other rapid quenching process (at a cooling rate of 102° C./s to 104° C./s) has a smaller mean particle size and a sharper particle size distribution than a powder made by an ingot casting process, and therefore, exhibits particularly bad flowability. For that reason, the amount of the powder to be loaded into the cavity may sometimes go beyond its allowable range or the in-cavity fill density may become non-uniform. As a result, the variations in the mass or dimensions of the compacts may exceed their allowable ranges or the compacts may crack or chip.\n\n[0014]As another method for improving the flowability and compactibility of an R—Fe—B based alloy powder, there was a proposal to make a granulated powder.\n\n[0015]For example, Japanese Laid-Open Publication No. 63-237402 discloses that the compactibility should be improvable with a granulated powder to be obtained by adding 0.4 mass % to 4.0 mass % of mixture of a paraffin compound (which is liquid at room temperature) and an aliphatic carboxylate to the powder, and mulling and granulating them together. A method in which polyvinyl alcohol (PVA) is used as a granulating agent is also known. It should be noted that the granulating agent, as well as a lubricant, functions as a binder for increasing the strength of the compact.\n\n[0016]If the granulating agent disclosed in Japanese Laid-Open Publication No. 63-237402 is used, however, then the binder removability is so bad that the magnetic properties of an R—Fe—B based sintered magnet will be deteriorated by carbon remaining in the sintered body.\n\n[0017]On the other hand, the granulated powder produced by applying a spray dryer method to PVA has high binding force and therefore is too hard to be broken completely even on the application of an external magnetic field. Accordingly, the primary particles thereof cannot be aligned with the magnetic field sufficiently and no magnets with excellent magnetic properties can be obtained. PVA also has bad binder removability and carbon derived from PVA is likely to remain in the magnets. This problem may be overcome by performing a binder removal process within a hydrogen atmosphere. However, it is still difficult to remove that carbon sufficiently.\n\n[0018]To solve the problem that the granulated powder is difficult to break even under the aligning magnetic field, the applicant of the present application proposed a method of making a granulated powder, in which respective powder particles (i.e., primary particles) aligned with a magnetic field applied are coupled together with a granulating agent, by granulating the material powder with a static magnetic field applied thereto (see Japanese Laid-Open Publication No. 10-140202). If this granulated powder is used, the magnetic properties are improvable compared with using a granulated powder in which primary particles not aligned with a magnetic field applied are coupled together with a granulating agent. However, it is difficult to align the powder particles being pressed with the magnetic field sufficiently. Consequently, the resultant magnetic properties are lower than a situation where a non-granulated rare-earth alloy powder was used.\n\n[0019]Various granulating agents and granulating methods have been proposed so far as described above. However, a method for mass-producing a rare-earth alloy granulated powder, which has excellent flowability and compactibility and which can contribute to producing magnets with good magnetic properties, has not yet been developed.\n\n[0020]On the other hand, demands for smaller, thinner and performance-enhanced magnets have been escalating. Thus, the development of a method for producing small or thin high-performance magnets with high productivity is awaited. Generally speaking, if a rare-earth alloy sintered body (or a magnet obtained by magnetizing the sintered body) is machined, then its magnetic properties will deteriorate due to a strain caused by the machining process. Such deterioration in magnetic properties is non-negligible in a small magnet. Accordingly, the smaller the size of the magnet to be obtained, the more necessary it is to make a sintered body that has so high dimensional accuracy as to need almost no machining at all and also has the final shape to be obtained. Demands for a rare-earth alloy powder with excellent flowability and compactibility (e.g., an R—Fe—B based alloy powder among other things) have been further growing for these reasons, too.\n\nDISCLOSURE OF INVENTION\n\n[0021]In order to overcome the problems described above, a primary object of the present invention is to provide a method of making a rare-earth alloy granulated powder, which has good flowability and good compactibility and which makes it possible to produce a magnet with excellent magnetic properties, and a method of making a quality rare-earth alloy sintered body with high productivity.\n\n[0022]A method of making a rare-earth alloy granulated powder according to the present invention includes the steps of: preparing a rare-earth alloy powder; generating remanent magnetization in the powder; and granulating the powder by utilizing agglomeration force produced by the remanent magnetization of the powder, thereby achieving the object described above.\n\n[0023]The step of granulating preferably includes the step of giving kinetic energy to particles of the powder, and the particles preferably grow under a tumbling action, produced by the kinetic energy given, under a substantially zero magnetic field.\n\n[0024]The method may include the steps of: preparing the powder with remanent magnetization in a vessel; and giving the powder particles kinetic energy under a substantially zero magnetic field in the vessel. Alternatively, the method may include the steps of: preparing the powder in a vessel; generating remanent magnetization in the powder in the vessel by applying a magnetic field to the powder; and giving kinetic energy to the powder particles with the remanent magnetization under a substantially zero magnetic field in the vessel.\n\n[0025]The method may further include the step of adding a granulating agent to the powder. Alternatively, the method may further include the step of not adding any granulating agent to the powder.\n\n[0026]The step of generating remanent magnetization in the powder preferably includes the step of applying an alternating demagnetizing field.\n\n[0027]The rare-earth alloy is preferably an R—Fe—B based alloy including 2 mass % or more of Dy, 1 mass % or more of Tb, or 1 mass % or more of Dy and Tb.\n\n[0028]The powder preferably has a mean particle size of 1.5 μm to 6 μm.\n\n[0029]The step of granulating preferably includes the step of making a granulated powder with a mean particle size of 0.05 mm to 3.0 mm.\n\n[0030]A method of making a rare-earth alloy sintered body according to the present invention includes the steps of: making a rare-earth alloy granulated powder by one of the methods described above; filling a cavity with a rare-earth alloy powder, including the granulated powder, without applying any demagnetizing magnetic field to the granulated powder; making a compact by pressing the rare-earth alloy powder, including the granulated powder, with an aligning magnetic field applied thereto; and sintering the compact, thereby achieving the object described above.\n\n[0031]A rare-earth alloy granulated powder according to the present invention is characterized by including a rare-earth alloy powder with remanent magnetization and a mean particle size of 1.5 μm to 6 μm, having a mean particle size of 0.05 mm to 3.0 mm, and being coupled together via agglomeration force produced by remanent magnetization.\n\n[0032]A method of making a rare-earth alloy granulated powder according to a preferred embodiment of the present invention is characterized by including the steps of: (a) preparing a rare-earth alloy powder with remanent magnetization in a vessel by mounting the powder on a base plate with air permeability; (b) generating a first gas flow in the vessel such that the first gas flow goes upward from under the base plate; (c) giving kinetic energy to the powder particles by way of the first gas flow, thereby granulating the powder under a substantially zero magnetic field by utilizing agglomeration force produced by the remanent magnetization of the powder and tumbling action produced by the kinetic energy; (d) generating a second gas flow in the vessel such that the second gas flow goes downward from over the base plate; and (e) forming a powder layer out of the powder on the base plate and compressing the powder layer with the second gas flow. The method is also characterized in that at least a part of the step (d) and at least a part of the step (b) are carried out simultaneously, thereby achieving the object described above.\n\n[0033]In one preferred embodiment, a period in which the steps (d) and (b) are carried out simultaneously includes a period in which the flow rate of the first gas flow is decreased while that of the second gas flow is increased.\n\n[0034]The step (a) may include the steps of loading a rare-earth alloy powder with no remanent magnetization into the vessel and generating remanent magnetization in the powder with no remanent magnetization, which has been loaded into the vessel, by applying a magnetic field to the powder. Alternatively, the step (a) may include the steps of preparing a rare-earth alloy powder with remanent magnetization and loading the powder with remanent magnetization into the vessel.\n\n[0035]In one preferred embodiment, the steps (b), (c), (d) and (e) are repeatedly carried out in this order a number of times.\n\n[0036]In another preferred embodiment, the method may further include the step of (f) stopping the first gas flow once while generating the second gas flow and then stopping the second gas flow while generating the first gas flow again at a flow rate exceeding an average flow rate of the first gas flow in the step (c), thereby crushing the powder layer that has been formed on the base plate. The step (f) may be carried out at least once after the step (e) while the steps (b) through (e) are being carried out repeatedly.\n\n[0037]In another preferred embodiment, the rare-earth alloy is an R—Fe—B based alloy.\n\n[0038]In another preferred embodiment, the powder has a mean particle size of 1.5 μm to 6 μm.\n\n[0039]In another preferred embodiment, the method makes a granulated powder with a mean particle size of 0.05 mm to 3.0 mm.\n\n[0040]A method of making a rare-earth alloy sintered body according to the present invention is characterized by including the steps of: making a rare-earth alloy granulated powder by one of the methods described above; filling a cavity with a rare-earth alloy powder, including the granulated powder, without applying any demagnetizing magnetic field to the granulated powder; making a compact by pressing the rare-earth alloy powder, including the granulated powder, with an aligning magnetic field applied thereto; and sintering the compact.\n\n[0041]A machine of making a rare-earth alloy granulated powder according to the present invention is characterized by including: a vessel including a base plate for receiving a rare-earth alloy powder; a first channel, which is connected to the vessel so as to produce a first gas flow, going upward from under the base plate, in the vessel; and a second channel, which is connected to the vessel so as to produce a second gas flow, going downward from over the base plate, in the vessel. The machine is also characterized in that the first and second channels are connected to the vessel independently of each other, thereby achieving the object described above.\n\n[0042]The machine preferably further includes a temperature controller and a fan within the first channel.\n\n[0043]The machine may further include a buffer tank within the second channel.\n\n[0044]The machine preferably further includes a control circuit, which includes a thermometer for sensing the temperature of the gas in the vessel and stops the operation of the fan at least when the temperature sensed exceeds a predetermined temperature.\n\n[0045]A positive pressure is preferably maintained within the vessel while the machine is operating.\n\n[0046]The machine may further include magnetic field generating means for applying a magnetic field to the powder mounted on the base plate.\n\nBRIEF DESCRIPTION OF DRAWINGS\n\n[0047]FIG. 1(a) schematically illustrates the structure of a granulated powder according to a preferred embodiment of the present invention, and FIGS. 1(b) and 1(a) schematically illustrate the structures of conventional granulated powders for the purpose of comparison.\n\n[0048]FIG. 2 schematically illustrates a granulating machine 20 for making an R—Fe—B based alloy granulated powder according to a preferred embodiment of the present invention.\n\n[0049]FIG. 3 schematically illustrates a granulating machine 100 for making an R—Fe—B based alloy granulated powder according to another preferred embodiment of the present invention.\n\n[0050]FIGS. 4(a) and 4(b) are graphs schematically showing how (the flow rates of) gas flows in a vessel change (with time) in a method of making a granulated powder according to a preferred embodiment of the present invention.\n\n[0051]FIG. 5 is a graph showing the remanences Br of sintered magnets that were made from granulated powders according to specific examples of the present invention and granulated powders according to comparative examples.\n\nBEST MODE FOR CARRYING OUT THE INVENTION\n\n[0052]Hereinafter, a method of making a granulated powder and a method of making a rare-earth alloy sintered body according to preferred embodiments of the present invention will be described with reference to the accompanying drawings. In the following description of preferred embodiments, the features of the present invention will be described as being applied to a method of making a sintered magnet of an R—Fe—B based alloy powder prepared by a strip casting process, which exhibits excellent magnetic properties but low flowability. However, the present invention is in no way limited to those specific preferred embodiments. Thus, a rare-earth alloy powder made by any other method may also be used instead.\n\n[0053]A method of making an R—Fe—B based alloy sintered body according to a preferred embodiment of the present invention includes the steps of: making an R—Fe—B based alloy powder (which will be referred to herein as a “material powder” or “primary particle powder”); generating remanent magnetization in the material powder; granulating the powder by utilizing agglomeration force produced by the remanent magnetization of the material powder; making a compact by pressing the R—Fe—B based alloy powder, including the granulated powder, with a magnetic field applied thereto; and sintering the compact. By magnetizing the resultant sintered body by a known method, an R—Fe—B based sintered magnet can be obtained. It should be noted that the magnetizing process step may be carried out at any arbitrary point in time after the sintering process. For example, the user of the sintered magnet may perform the magnetizing process step just before he or she uses the sintered magnet. Even a non-magnetized one will also be referred to herein as a “sintered magnet”.\n\n[0054]In a method of making an R—Fe—B based alloy sintered body according to a preferred embodiment of the present invention, the powder is granulated by utilizing the agglomeration force produced by the remanent magnetization of the material powder. Accordingly, it is possible to either reduce the amount of a granulating agent to be added or use a binder with low binding force than a conventional one. Furthermore, even the addition of the granulating agent itself may be omitted.\n\n[0055]Hereinafter, the features of a granulated powder making method and a resultant granulated powder according to a preferred embodiment of the present invention will be described with reference to FIGS. 1(a), 1(b) and 1(c). On the left-hand side of FIG. 1, illustrated schematically are the structures of respective granulated powders. On the right-hand side of FIG. 1, illustrated schematically are the states of respective granulated powders to which an aligning magnetic field has been applied in a cavity for the purpose of compaction. More specifically, FIG. 1(a) illustrates a granulated powder 12a according to a preferred embodiment of the present invention, FIG. 1(b) illustrates a conventional granulated powder 12b for which a granulating agent has been used, and FIG. 1(c) illustrates a granulated powder 12a obtained by the method described in Japanese Laid-Open Publication No. 10-140202 identified above.\n\n[0056]As shown in FIG. 1(a), in the granulated powder 12a of this preferred embodiment, primary particles 10a with remanent magnetization are weakly coupled together via magnetic agglomeration force. In the illustrated example, no granulating agent is supposed to be used. These primary particles 10a with remanent magnetization are magnetically coupled together so as to form a magnetic closed circuit, and the remanent magnetization of the granulated powder 12a is very small (e.g., more than about 0 mT and equal to or smaller than about 10 mT (millitesla)). In this granulated powder 12a, the remanent magnetization of the primary particles 10a is oriented at random unlike the granulated powder 12c shown in FIG. 1(c). The primary particles 10a may have a mean particle size of about 1.5 μm to about 6.0 μm and the granulated powder 12a may have a mean particle size of about 0.05 mm to about 3.0 mm, for example. The remanent magnetization may be measured by inserting a probe of a gauss meter into the granulated powder.\n\n[0057]This granulated powder 12a has a moderate particle size and can exhibit excellent flowability. In addition, this granulated powder 12a also has low remanent magnetization and can be loaded into a cavity easily and uniformly without causing any bridging. Furthermore, these primary particles 10a are just coupled together via the magnetic agglomeration force. Accordingly, as shown on the left-hand side of FIG. 1(a), the granulated powder 12a can be broken down into the primary particles 10a just as intended by applying an aligning magnetic field (of about 0.1 T to about 0.8 T, for example) thereto. As a result, the primary particles 10a can be aligned with the magnetic field applied. Also, since the granulated powder 12a includes no granulating agent, the amount of carbon included in the sintered body never increases. A magnet obtained by magnetizing a sintered body made from this granulated powder 12a has substantially the same magnetic properties as a magnet obtained without granulating the material powder (with substantially zero remanent magnetization). That is to say, by using the granulated powder of the preferred embodiment of the present invention, the flowability and compactibility can be improved without deteriorating the magnetic properties. Optionally, it is naturally possible to add a granulating agent for the purpose of increasing the strength of the compact, for example. As such a granulating agent is used just as an additional agent, the granulating agent does not have to exhibit strong binding force. Thus, the amount and type of the granulating agent may be selected so as not to deteriorate the magnetic properties.\n\n[0058]In contrast, the granulated powder 12b, obtained by binding the primary particles 10b of the material powder together with a granulating agent 14, cannot be sufficiently broken down even under an aligning magnetic field as shown in FIG. 1(b). As a result, the magnetic properties of the resultant sintered magnet deteriorate. Compared with a magnet obtained without granulating the material powder at all, the remanent magnetization of that sintered magnet decreases by about 1% to about 10%. It should be noted that arrows are omitted from the primary particles 10b of the granulated powder 12b shown in FIG. 1(b) because the particles 10b have no remanent magnetization.\n\n[0059]Furthermore, if a granulated powder 12c is obtained by binding and fixing primary particles 10c together with a granulating agent 14 while aligning the primary particles 10c under a static magnetic field as shown in FIG. 1(c), then the deterioration in magnetic properties can be minimized but the granulated powder 12a cannot be fully broken down into the primary particles 10c. Accordingly, compared with a magnet obtained without granulating the material powder at all, the remanent magnetization of the resultant sintered magnet decreases by about one to several percent. Also, as schematically illustrated in FIG. 1(c), the granulated powder 12c is elongated in the directions of the magnetic poles, which is disadvantageous in terms of flowability. Furthermore, since the granulated powder 12a has relatively large remanent magnetization, the granulated powder 12a will produce bridging and cannot be loaded into a cavity unless demagnetized once.\n\n[0060]In contrast, the granulated powder 12a of the preferred embodiment of the present invention is almost spherical in shape, has too small remanent magnetization to require any demagnetization, and can be loaded into a cavity easily and uniformly. Accordingly, a so-called “measuring-and-loading technique”, in which a predetermined mass of granulated powder is measured in advance and then loaded into a cavity, can be adopted. As described above, the granulated powder 12a of the preferred embodiment of the present invention can exhibit excellent flowability and cavity-filling ability and can contribute to making a sintered magnet substantially without deteriorating the magnetic properties.\n\n[0061]A granulated powder according to a preferred embodiment of the present invention is obtained by a granulating method including the steps of giving kinetic energy to particles of a material powder with remanent magnetization and allowing the particles to grow under a tumbling action produced by the kinetic energy given. Optionally, a granulating agent may be added if necessary.\n\n[0062]In a method of making a granulated powder according to a preferred embodiment of the present invention, the step of generating remanent magnetization in the material powder may be carried out either before the material powder is loaded into the vessel of a granulating machine (i.e., a granulating vessel) or after the material powder has been prepared (or loaded) in the vessel. However, the primary particles 10a of the granulated powder 12a of this preferred embodiment are just coupled together under magnetic agglomeration force produced by the remanent magnetization. Accordingly, the granulated powder 12a is broken down upon the application of an external magnetic field. For that reason, the particles are allowed to grow under a substantially zero magnetic field. This is contrary to the method of making the granulated powder 12c shown in FIG. 1(c) in which a magnetic field needs to be applied continuously to align the primary particles 10c until the granulated powder 12 is definitely fixed with the granulating agent 14. As used herein, the “substantially zero magnetic field” refers to a magnetic field which is weak enough to obtain a granulated powder where a magnetic closed circuit has been formed by the remanent magnetization of the powder and to have no effects on the remanent magnetization of the powder.\n\n[0063]The magnetic field to be applied to generate remanent magnetization may be any of various magnetic fields. Since the primary particles may have a little remanent magnetization, an alternating demagnetizing field is preferably used. However, the magnetic field to generate remanent magnetization does not have to be such an alternating demagnetizing field but may also be a monotonically demagnetizing field, another type of pulse magnetic field or a static magnetic field.\n\n[0064]It should be noted that even after the remanent magnetization has been generated, a material powder with low coercivity might lose the magnetization and the shape of the granulated powder before the final granulated powder is obtained. For that reason, the material powder preferably has relatively high coercivity. Specifically, if the coercivity value of a material powder, which has been loaded into a container so as to have a tap density of 2.0 g/cm3, is measured by a BH tr', '技术领域 \n\n [0001] 稀土合金造粒粉的制造方法和机械以及稀土合金烧结体的制造方法技术领域本发明涉及稀土合金造粒粉的制造方法和机械以及稀土合金烧结体的制造方法。 \n\n 背景技术 \n\n [0002] 稀土合金烧结磁体(永磁体)通常是通过将稀土合金粉末压制,烧结所得粉末压块然后对烧结体进行时效处理来制造的。 当前在各种应用中广泛使用的永磁体包括稀土钴基磁体和稀土铁硼基磁体。 其中,稀土-铁-硼基磁体(在本文中称为“ R-Fe-B基磁体”,其中R是包括Y的稀土元素之一,Fe是铁,并且 B是硼)越来越多地用于各种电子设备中。 这是因为基于R-Fe-B的磁体表现出最大能量乘积,该能量乘积高于各种其他类型的磁体中的任何一种,但是相对便宜。 \n\n [0003] 基于R-Fe-B的烧结磁体包括主要由四方R组成的主相 2 铁 14 B化合物,例如包含Nd的R富相和B富相。 在基于R-Fe-B的烧结磁体中,一部分Fe可以被诸如Co或Ni的过渡金属替代,并且一部分硼(B)可以被碳(C)替代。 在美国专利No.5,200,200中描述了一种基于R-Fe-B的烧结磁体,本发明可有效地应用于该烧结磁体。 例如,美国专利号4,770,723和4,792,368。 \n\n [0004] 在现有技术中,已经通过铸锭法将R-Fe-B基合金制备为用于这种磁体的材料。 通常,在锭铸法中,通过感应加热法使作为起始原料的稀土类金属,电解铁和硼铁合金熔融,然后在铸模中将这样得到的熔体进行比较缓慢的冷却,从而制备铸件。 合金锭。 \n\n [0005] 近来,诸如带材铸造工艺或离心铸造工艺的快速冷却工艺在本领域中引起了很多关注。 在快速冷却过程中,熔融合金与单个冷却辊,双冷却辊,旋转盘或旋转的圆柱形铸模的内表面接触并相对快速地冷却,从而制得凝固的合金 比熔融合金薄的合金锭。 以这种方式制备的固化合金在本文中将被称为“合金薄片”。 通过这种快速冷却过程产生的合金薄片通常具有约0.03mm至约10mm的厚度。 根据快速冷却过程,熔融合金从其已经与冷却辊的表面接触的表面开始固化。 熔融合金的该表面在本文中将被称为“辊接触表面”。 因此,在快速冷却过程中,柱状晶体从辊接触​​表面沿厚度方向生长。 结果,通过带钢铸造工艺或任何其他快速冷却工艺制成的快速凝固合金具有包括R的结构。 2 铁 14 B晶相和富R相。  R 2 铁 14 B结晶相通常具有约0.1μm至约100μm的短轴尺寸和约5μm至约500μm的长轴尺寸。 另一方面,富R相是包括相对较高浓度的稀土元素R并且具有大约10μm或更小的厚度(对应于晶界的宽度)的非磁性相。  ,分散在R之间的晶界 2 铁 14 B晶相。 \n\n [0006] 与通过常规的铸锭法或压铸法制得的合金(该合金在本文中称为“锭合金”)相比,快速固化的合金在较短的时间内(即以冷却速率)被淬火。 共10 2 °C / s至10 4 °C. / s)。 因此,快速凝固的合金具有较细的组织和较小的晶粒尺寸。 另外,在快速凝固的合金中,其晶界具有更大的面积,并且富R相在晶界上宽而细地分散。 因此,快速凝固的合金在富R相的分散性方面也优异。 因为快速凝固的合金具有上述有利特征,所以可以由快速凝固的合金制成具有优异的磁性能的磁体。 \n\n [0007] 在本领域中还已知被称为“ Ca还原过程(或还原/扩散过程)”的替代合金制备方法。 该过程包括以下加工和制造步骤:将金属钙(Ca)和氯化钙(CaCl)添加到至少一种稀土氧化物,铁粉,纯硼粉以及硼铁硼粉和硼中的至少一种的混合物中 以预定比例的氧化物或包含合金粉末或以预定比例的这些构成元素的混合氧化物的混合物; 在惰性气氛中对所得混合物进行还原/扩散处理; 稀释所获得的反应物以制成浆液; 然后用水处理浆液。 以这种方式,可以获得基于R-Fe-B的合金的固体。 \n\n [0008] 应当注意,固体合金的任何小块在本文中将被称为“合金块”。  “合金块”可以是各种形式的固体合金中的任何一种,其不仅包括通过冷却材料合金的熔体而获得的凝固合金(例如,通过传统的铸锭法制备的合金锭或通过快速铸造法制备的合金薄片)。 冷却工艺(如带钢铸造工艺),也包括通过Ca还原工艺获得的固态合金。 \n\n [0009] 通过执行以下处理步骤来获得要压实的合金粉末:通过例如氢吸合工艺和/或任何机械研磨工艺(例如,使用圆盘磨机)将这些形式中的任何一种的合金块粗粉碎。  ); 例如,通过使用喷射式磨机的干磨法将所得的粗粉(平均粒径为10μm至500μm)细粉碎。 \n\n [0010] 待压实的基于R-Fe-B的合金粉末优选具有1.5μm至约6μm的平均粒径以实现足够的磁性能。 应当注意,粉末的“平均粒度”在本文中是指FSSS粒度,除非另有说明。 然而,当使用具有如此小的平均粒径的粉末时,所得的流动性,致密性(包括空腔填充密度和可压缩性)和生产率将变差。 \n\n [0011] 为了克服这个问题,提出了一种用润滑剂涂覆合金粉末颗粒表面的方法。 例如,日本公开公报No.08-111308和美国专利No. 美国专利第5,666,635号公开了通过添加0.02质量%至5.0质量%的润滑剂(包括至少一种液化脂肪族油)来制备R-Fe-B基合金细粉(平均粒径为1.5μm至5μm)的技术。 酸酯)制成R-Fe-B基合金粗粉,其平均粒径为10μm至500μm,然后在惰性气体中通过气流粉碎机将混合物粉碎。 \n\n [0012] 润滑剂不仅改善了粉末的流动性和致密性(或可压缩性),而且还充当了用于增加成型体的硬度(或强度)的粘合剂。 然而,润滑剂也可能作为残留碳保留在烧结体中,从而可能使磁性能劣化。 因此,润滑剂需要表现出良好的粘合剂可除去性。 例如,日本特开2000-306753号公开了作为优选的具有良好的粘合剂去除性的润滑剂:解聚的聚合物,解聚的聚合物与烃溶剂的混合物,以及解聚的聚合物,低粘度矿物油和 烃溶剂。 \n\n [0013] 然而,根据该使用润滑剂的方法,虽然可以实现一定程度的改进,但是仍然难以将粉末充分均匀地填充到空腔中或实现足够的致密性。 除其他外,是通过带钢铸造工艺或任何其他快速淬火工艺(冷却速率为10 2 °C / s至10 4 (℃/ s)具有比通过铸锭法制造的粉末小的平均粒径和更陡峭的粒径分布,因此表现出特别差的流动性。 因此,装入腔体中的粉末量有时会超出其允许范围,否则腔内填充密度可能会变得不均匀。 结果,压块的质量或尺寸的变化可能超过其允许范围,或者压块可能破裂或碎裂。 \n\n [0014] 作为提高R-Fe-B类合金粉末的流动性和致密性的另一种方法,提出了制造造粒粉末的提议。 \n\n [0015] 例如,日本特开昭63-237402号公报公开了通过将0.4质量%至4.0质量%的石蜡化合物的混合物(在室温下为液体)添加而得到的造粒粉,可以提高致密性。 然后将脂肪族羧酸盐加到粉末中,然后将它们研成颗粒。 还已知其中使用聚乙烯醇(PVA)作为造粒剂的方法。 应当注意的是,制粒剂以及润滑剂起粘合剂的作用,以增加压坯的强度。 \n\n [0016] 但是,如果使用日本特开昭63-237402号公报中记载的造粒剂,则粘结剂的去除性差,残留在炉中的碳会损害R-Fe-B系烧结磁铁的磁特性。 烧结体。 \n\n [0017] 另一方面,通过将喷雾干燥器方法应用于PVA而制得的造粒粉末具有高结合力,因此即使在施加外部磁场的情况下也难以完全破碎。 因此,其一次粒子不能充分地与磁场对准,并且不能获得具有优异磁性的磁体。  PVA还具有不良的粘合剂去除性,并且源自PVA的碳很可能残留在磁体中。 通过在氢气氛中进行粘合剂去除工艺可以克服该问题。 但是,仍然很难充分除去该碳。 \n\n [0018] 为了解决粒状粉末即使在取向磁场下也难以破碎的问题,本申请的申请人提出了一种制备粒状粉末的方法,其中各个粉末颗粒(即,一次颗粒)与磁场对准。 通过将施加于其上的静磁场使原料粉末造粒,将涂覆的涂料与造粒剂偶联在一起(参见日本特开平10-140202号公报)。 如果使用该造粒粉末,则与使用其中不与施加的磁场对准的一次粒子与造粒剂结合在一起的造粒粉末相比,磁性能提高。 然而,难以使被压制的粉末粒子与磁场充分地对准。 因此,所得到的磁性能低于使用非粒状稀土合金粉末的情况。 \n\n [0019] 到目前为止,已经提出了各种制粒剂和制粒方法。 但是,尚未开发出大量生产具有优异的流动性和致密性并且有助于生产具有良好磁性能的磁体的稀土合金粒状粉末的方法。 \n\n [0020] 另一方面,对更小,更薄和性能增强的磁体的需求正在不断增加。 因此,等待开发用于以高生产率生产小或薄的高性能磁体的方法。 一般而言,如果加工稀土合金烧结体(或通过使烧结体磁化而获得的磁体),则其磁性能将由于由加工过程引起的应变而劣化。 磁性的这种降低在小磁体中是不可忽略的。 因此,要获得的磁体的尺寸越小,就越需要制造具有如此高的尺寸精度以至于几乎不需要加工并且还具有要获得的最终形状的烧结体。 由于这些原因,对具有优异的流动性和致密性的稀土合金粉末(例如,基于R-Fe-B的合金粉末)的需求也日益增长。 \n\n 发明内容 \n\n [0021] 为了克服上述问题,本发明的主要目的是提供一种稀土合金造粒粉的制造方法,该方法具有良好的流动性和良好的致密性,并且可以制造具有优异的磁性的磁体。 的特性,以及高生产率地制造高质量的稀土合金烧结体的方法。 \n\n [0022] 本发明的稀土合金造粒粉的制造方法包括以下步骤:制备稀土合金粉;以及制备稀土合金粉。 在粉末中产生剩余磁化强度; 通过利用粉末的剩余磁化产生的附聚力将粉末制粒,从而实现上述目的。 \n\n [0023] 造粒步骤优选包括向粉末颗粒赋予动能的步骤,并且颗粒优选在基本零磁场下在由给定的动能产生的翻滚作用下生长。 \n\n [0024] 该方法可以包括以下步骤:在容器中通过剩磁制备粉末; 在容器中的磁场基本为零的情况下,给粉末颗粒提供动能。 或者,该方法可以包括以下步骤:在容器中制备粉末;以及在容器中制备粉末。 通过对粉末施加磁场,在容器中的粉末中产生剩磁。 在容器中的磁场基本为零的情况下,通过剩余磁化作用将粉末赋予动能。 \n\n [0025] 该方法可以进一步包括将造粒剂添加到粉末中的步骤。 或者,该方法可以进一步包括不向粉末中添加任何粒化剂的步骤。 \n\n [0026] 在粉末中产生剩余磁化的步骤优选地包括施加交变的消磁场的步骤。 \n\n [0027] 稀土合金优选为包含2质量%以上的Dy,1质量%以上的Tb,或1质量%以上的Dy和Tb的R-Fe-B系合金。 \n\n [0028] 粉末优选具有1.5μm至6μm的平均粒度。 \n\n [0029] 造粒步骤优选包括制备平均粒径为0.05mm至3.0mm的造粒粉末的步骤。 \n\n [0030] 根据本发明的稀土合金烧结体的制备方法包括以下步骤:通过上述方法之一制备稀土合金造粒粉末;以及通过以下方法制备稀土合金造粒粉末。 用稀土合金粉末(包括颗粒状粉末)填充空腔,而不对颗粒状粉末施加任何消磁磁场; 通过压制稀土合金粉末(包括粒状粉末)并施加取向磁场来压制成型; 烧结体,从而实现上述目的。 \n\n [0031] 本发明的稀土合金造粒粉末的特征在于,包括具有剩磁且平均粒径为1.5μm〜6μm,平均粒径为0.05mm〜3.0mm的稀土合金粉末,并且 通过剩余磁化产生的凝聚力耦合在一起。 \n\n [0032] 根据本发明优选实施方案的制备稀土合金粒状粉末的方法的特征在于包括以下步骤:(a)通过将粉末保持在容器中来制备具有剩余磁化强度的稀土合金粉末。 透气基板 (b)在容器中产生第一气流,以使第一气流从底板下方向上;  (c)通过第一气流将动能提供给粉末颗粒,从而利用由粉末的剩余磁化产生的聚集力和由动能产生的翻滚作用,在基本上为零的磁场下将粉末制粒;  (d)在容器中产生第二气流,使得第二气流从基板上方向下流动;  (e)在基板上由粉末形成粉末层,并利用第二气流压缩粉末层。 该方法的特征还在于,步骤(d)的至少一部分和步骤(b)的至少一部分同时进行,从而实现了上述目的。 \n\n [0033] 在一个优选的实施方式中,步骤(d)和(b)同时进行的期间包括第一气体流量减少而第二气体流量增加的期间。 \n\n [0034] 步骤(a)可以包括以下步骤:通过施加磁场到容器中,将没有剩余磁化的稀土合金粉末装载到容器中,并且在已经被装载到容器中的没有剩余磁化的粉末中产生剩余磁化。 粉。 或者,步骤(a)可以包括以下步骤:制备具有剩余磁化的稀土合金粉末,并将具有剩余磁化的粉末装载到容器中。 \n\n [0035] 在一个优选的实施方案中,步骤(b),(c),(d)和(e)以该顺序重复进行多次。 \n\n [0036] 在另一个优选实施例中,该方法可以进一步包括以下步骤:(f)在产生第二气流的同时停止一次第一气流,然后在以超过平均流量的流速再次产生第一气流的同时停止第二气流。 在步骤(c)中以第一气流的最大流速进行压缩,从而粉碎已经在基板上形成的粉末层。 在重复进行步骤(b)至(e)的同时,步骤(f)可以在步骤(e)之后至少进行一次。 \n\n [0037] 在另一个优选的实施方式中,稀土合金是R-Fe-B基合金。 \n\n [0038] 在另一个优选的实施方案中,粉末的平均粒径为1.5μm至6μm。 \n\n [0039] 在另一个优选的实施方案中,该方法制备平均粒度为0.05mm至3.0mm的粒状粉末。 \n\n [0040] 本发明的稀土合金烧结体的制造方法的特征在于,包括以下步骤:通过上述任一种方法制造稀土合金造粒粉;以及通过以下方法制造稀土合金造粒粉。 用稀土合金粉末(包括颗粒状粉末)填充空腔,而不对颗粒状粉末施加任何消磁磁场; 通过压制稀土合金粉末(包括粒状粉末)并施加取向磁场来压制成型; 并烧结成型体。 \n\n [0041] 本发明的稀土合金造粒粉的制造机器的特征在于,包括:容器,该容器包括用于容纳稀土合金粉的基板;以及容器。 第一通道,其连接至容器,以在容器中产生从底板下方向上流动的第一气流; 第二通道,第二通道连接到容器,以在容器中产生从底板上方向下流的第二气流。 该机器的特征还在于,第一通道和第二通道彼此独立地连接至容器,从而实现上述目的。 \n\n [0042] 机器优选地还包括在第一通道内的温度控制器和风扇。 \n\n [0043] 机器还可在第二通道内包括缓冲罐。 \n\n [0044] 机器优选地还包括控制电路,该控制电路包括用于感测容器中气体温度的温度计,并且至少当感测到的温度超过预定温度时才停止风扇的操作。 \n\n [0045] 机器运行时,最好在容器内保持正压。 \n\n [0046] 该机器可以进一步包括磁场产生装置,该磁场产生装置用于向安装在基板上的粉末施加磁场。 \n\n 附图说明 \n\n [0047] 图。  1( a 图1)示意性地示出了根据本发明优选实施方式的粒状粉末的结构。  1( b )和 1 ( a )为了比较的目的,示意性地示出了常规造粒粉末的结构。 \n\n [0048] 图。 图2示意性地示出了造粒机 20  根据本发明的优选实施方式的用于制备基于R-Fe-B的合金造粒粉末的方法。 \n\n [0049] 图。 图3示意性地示出了造粒机 100  根据本发明另一优选实施方式的用于制备基于R-Fe-B的合金造粒粉末的方法。 \n\n [0050] 无花果 4( a )和 4 ( b )是示意性地示出在根据本发明的优选实施方式的造粒粉末的制造方法中,气体在容器中的流动(流速)随时间变化的曲线图。 \n\n [0051] 图。 图5是示出由根据本发明的具体实施例的粒状粉末和根据比较例的粒状粉末制成的烧结磁体的剩磁Br的图。 \n\n 实施本发明的最佳模式 \n\n [0052] 在下文中,将参照附图描述根据本发明的优选实施方式的造粒粉末的制造方法和稀土合金烧结体的制造方法。 在以下对优选实施方式的描述中,本发明的特征将被描述为应用于通过带式铸造工艺制备的R-Fe-B基合金粉末的烧结磁体的制造方法,该方法具有优异的磁性能。 但流动性低。 然而,本发明决不限于那些特定的优选实施例。 因此,也可以替代地使用通过任何其他方法制造的稀土合金粉末。 \n\n [0053] 根据本发明的优选实施方式的制造基于R-Fe-B的合金烧结体的方法包括以下步骤:制造基于R-Fe-B的合金粉末(在本文中将其称为“原料粉末”)。  ”或“初级粒子粉末”); 在物料粉末中产生剩磁; 利用物料粉末的剩余磁化产生的附聚力将粉末制粒; 通过对包括粒状粉末的R-Fe-B基合金粉末施加磁场,进行压制成型; 并烧结成型体。 通过用已知方法磁化所得的烧结体,可以获得基于R-Fe-B的烧结磁体。 应当注意,磁化处理步骤可以在烧结处理之后的任意时间点进行。 例如,烧结磁体的使用者可以在他或她使用烧结磁体之前执行磁化过程步骤。 甚至未磁化的磁体在本文中也将被称为“烧结磁体”。 \n\n [0054] 在根据本发明的优选实施方式的制造基于R-Fe-B的合金烧结体的方法中,通过利用由材料粉末的剩余磁化产生的附聚力来使粉末粒化。 因此,可以减少制粒剂的添加量,或者可以使用与传统粘合剂相比具有低粘合力的粘合剂。 此外,甚至可以省略成粒剂本身的添加。 \n\n [0055] 在下文中,将参照图1至图5描述根据本发明的优选实施方式的造粒粉末的制造方法和所得造粒粉末的特征。  1( a ), 1 ( b )和 1 ( c )。 在图的左侧。 参照图1,示意性地示出了各个造粒粉末的结构。 在图的右侧。 具体实施方式在图1中,示意性地示出了各个粒状粉末的状态,为了压实的目的,在腔中已经施加了取向磁场。 更具体地说,  1( a )说明了颗粒状的粉末 12 a  根据本发明的优选实施例,  1( b )说明了传统的颗粒状粉末 12 b  其中使用了制粒剂。  1( c )说明了颗粒状的粉末 12 a  通过以上确定的日本特许公开第10-140202号中描述的方法获得了该产物。 \n\n [0056] 如图1所示。  1( a ),在颗粒状粉末中 12 a  在这个优选实施方案中,初级颗粒 10 a  剩余磁化强度通过磁团聚力弱耦合在一起。 在所示的实例中,假定不使用制粒剂。 这些初级粒子 10 a  具有剩余磁化强度的磁耦合在一起以形成磁闭合回路,并且造粒粉末的剩余磁化强度 12 a  很小(例如,大于约0 mT且等于或小于约10 mT(millitesla))。 在这种颗粒状的粉末中 12 a ,初级粒子的剩余磁化强度 10 a  与粒状粉末不同,是随机取向的 12 c  如图所示。  1( c )。 初级粒子 10 a  可以具有约1.5μm至约6.0μm的平均粒度,并且造粒的粉末 12 a  颗粒的平均粒度例如可以为约0.05mm至约3.0mm。 剩余磁化强度可通过将高斯计的探针插入粒状粉末中来测量。 \n\n [0057] 这种颗粒状的粉末 12 a  具有适中的粒度,并可以表现出优异的流动性。 另外,这种颗粒状的粉末 12 a  它还具有较低的剩余磁化强度,并且可以轻松,均匀地加载到空腔中,而不会引起任何桥接。 此外,这些初级粒子 10 a  它们只是通过磁凝聚力耦合在一起。 因此,如在图的左侧所示,  1( a ),颗粒状的粉末 12 a  可以分解成初级粒子 10 a  正好通过向其施加对准磁场(例如,大约0.1 T至大约0.8 T)来实现。 结果,初级粒子 10 a  可以与施加的磁场对齐。 另外,由于颗粒状 12 a  由于不含粒化剂,因此烧结体中所含的碳量不会增加。 通过将由该造粒粉末制成的烧结体磁化而获得的磁体 12 a  具有与不使原料粉末造粒而获得的磁体基本相同的磁性能(剩磁基本为零)。 也就是说,通过使用本发明的优选实施方式的造粒粉,可以在不降低磁性能的情况下改善流动性和致密性。 任选地,例如为了增加压块的强度,自然可以添加制粒剂。 由于这种制粒剂仅用作附加剂,因此制粒剂不必表现出强的结合力。 因此,可以选择造粒剂的量和类型,以不损害磁性能。 \n\n [0058] 相反,颗粒状粉末 12 b ,通过结合初级粒子而获得 10 b  材料粉末与制粒剂的混合 14 如图1所示,即使在对准磁场下,也不能充分地分解α1,β2,β3,β3,β3,β3。  1( b )。 结果,所得烧结磁体的磁性能劣化。 与根本不使原料粉末造粒的磁体相比,该烧结磁体的剩余磁化强度降低约1%至约10%。 应该注意的是,初级粒子中省略了箭头 10 b  粒状粉末 12 b  如图所示。  1( b ),因为粒子 10 b  没有剩磁。 \n\n [0059] 此外,如果是颗粒状的粉末 12 c  通过结合和固定一次颗粒而获得 10 c  与造粒剂一起 14  排列主要粒子时 10 c  在如图1所示的静磁场下。  1( c ),则磁性能的下降可以减至最小,但颗粒状粉末 12 a  无法完全分解为初级粒子 10 c 。 因此,与根本不使原料粉末造粒的磁体相比,所得烧结磁体的剩余磁化强度降低约百分之一至百分之几。 而且,如图1中示意性地示出的,  1( c ),颗粒状的粉末 12 c  沿磁极的方向拉长,这在流动性方面是不利的。 此外,由于颗粒状 12 a  具有相对较大的剩余磁化强度,粒状粉末 12 a  会产生桥接现象,除非将其消磁一次,否则无法装入空腔。 \n\n [0060] 相反,颗粒状粉末 12 a  本发明的最佳实施例的磁头几乎是球形的,剩余的磁化强度太小而不能消磁,并且可以容易且均匀地装入空腔。 因此,可以采用所谓的“测定·装载技术”,其中,预先测定规定质量的造粒粉,然后装载到型腔中。 如上所述,造粒粉末 12 a  本发明的优选实施方案的第一实施例可以表现出优异的流动性和空腔填充能力,并且可以在基本上不降低磁性能的情况下有助于制造烧结磁体。 \n\n [0061] 通过包括以下步骤的造粒方法获得根据本发明优选实施方案的粒状粉末:对材料粉末的颗粒施加剩余磁化动能,并使颗粒在由给定动能产生的翻滚作用下生长。  。 任选地,如果需要,可以添加制粒剂。 \n\n [0062] 在根据本发明的优选实施方式的粒状粉末的制造方法中,可以在将所述物料粉末装载到制粒机的容器中之前,即在所述物料粉末中产生剩余磁化的步骤进行。 造粒容器)或在容器中制备(或装载)物料粉末后。 但是,初级粒子 10 a  粒状粉末 12 a  该优选实施例的磁头刚好在剩余磁化产生的磁团聚力作用下耦合在一起。 因此,颗粒状的粉末 12 a  在施加外部磁场时会被破坏。 因此,允许颗粒在基本为零的磁场下生长。 这与造粒粉末的方法相反 12 c  如图所示。  1( c ),其中需要连续施加磁场以对齐一次粒子 10 c  直到粉末状 12  用造粒剂固定 14 。 如本文所用,“基本上为零磁场”是指足够弱以获得获得粉末状粉末的磁场,其中通过粉末的剩余磁化形成了磁闭合回路,并且对粉末的剩余磁化没有影响。 粉。 \n\n [0063] 施加以产生剩余磁化的磁场可以是各种磁场中的任何一种。 由于初级粒子可能具有很少的剩余磁化强度,因此优选使用交变的消磁场。 但是,产生剩余磁化的磁场不必是这样的交变消磁场,也可以是单调消磁场,另一种脉冲磁场或静磁场。 \n\n [0064] 应当注意的是,即使在产生剩余磁化强度之后,具有低矫顽力的材料粉末也可能失去磁化强度,并且在获得最终的造粒粉末之前,造粒粉末的形状仍然存在。 因此,原料粉末优选具有较高的矫顽力。 具体地,如果材料粉末的矫顽力值已经装载到容器中以具有2.0g / cm的振实密度, 3 通过BH示踪剂测量作为材料粉末的表观矫顽力的α1,材料粉末的矫顽力优选为至少70kA / m,更优选为80kA / m或更高。 例如,基于R-Fe-B的合金优选包含至少2质量%的Dy,至少1质量%的Tb或至少1质量%的Dy和Tb。 \n\n [0065] 考虑到流动性和致密性,要压制和压制的R-Fe-B基合金粉末优选仅由如上所述制备的粒状粉末组成。 或者,也可以使用粒状粉末和原料粉末(即一次颗粒的粉末)的混合物。 然而,随着原料粉末的百分比增加,流动性降低。 因此,为了通过造粒技术充分有效地改善流动性,合金粉末优选基本上仅由造粒粉末组成。 而且,当使用原料粉末和造粒粉末的混合物时,原料粉末颗粒的表面优选涂覆有润滑剂。 通过用润滑剂涂覆一次颗粒的表面,可以改善基于R-Fe-B的粉末的流动性,并且还可以防止其氧化。 此外,在磁场下挤压粉末时,粉末颗粒也可以更容易地取向。 应该注意的是,不仅稀土合金粉末基本上仅由稀土合金构成(可能具有表面氧化物层),而且包括造粒剂和/或润滑剂的粉末以及稀土合金粉末也包括在内。 经受压实处理的材料在本文中将被称为“稀土合金粉末”。 \n\n [0066] 在下文中,将逐步描述根据本发明的优选实施方式的由基于R-Fe-B的合金烧结体制造磁体的方法。 \n\n [0067] 首先,通过带式铸造工艺制造基于R-Fe-B的合金薄片(例如,参见美国专利号5,383,978)。 具体地,通过感应加热工艺将通过已知方法制备的R-Fe-B基合金熔融以获得熔融合金。  R-Fe-B基合金还可以具有美国专利No.5,828,420中公开的组成。  4,770,723或4,792,368。 在基于R-Fe-B的稀土合金的典型组成中,通常将Nd或Pr用作R,一部分Fe可以被过渡元素(例如,Co)代替,并且一部分B可以为过渡元素。 替换为C。 \n\n [0068] 将该熔融合金保持在1350℃,然后在包括约1m / s的辊圆周速度,500℃的冷却速率和200℃的过冷的条件下在单个辊上快速淬火。 从而获得厚度为0.3mm的合金薄片。 通过吸氢处理使这些合金薄片破损,从而获得合金粗粉。 然后,将该合金粗粉通过喷射磨在氮气气氛中进行微粉碎,从而获得平均粒径为1.5μm〜6μm,比表面积为约0.45m的合金粉(即原料粉)。 2 / g至约0.55 m 2 / g,通过BET方法测得。 该材料粉末的真实密度为7.5 g / cm 3 。 \n\n [0069] 接下来,在以这种方式获得的材料粉末中产生剩磁。 在该示例中,向其施加具有1.0T的峰值磁场的交变消磁场。 \n\n [0070] 随后,将具有剩余磁化的原料粉末造粒。 在该实例中,采用了流化床制粒技术。 根据流化床造粒技术,可以获得准球形的并且具有足够的硬度的造粒粉末。 当粒状粉末具有这种几乎球形的形状时,获得了优异的流动性和致密性。 另外,造粒剂的硬度也可以改变。 但是,如上所述,如果造粒粉末太硬或太软,会带来不便。 \n\n [0071] 已知的制粒机 20  通过流化床制粒法制粒粉末的示意图在图1中示意性地示出。  2.制粒机 20  包括一个鼓风机 21 ,温度和湿度控制器 22 流体容器 23 ,开关阀 24 和反向鼓风机 26 。 作为这样的造粒机,优选使用富士波特株式会社制的摆动处理器。 20 。 \n\n [0072] 首先,在流体容器中进行正常流化 23  利用鼓风机产生的气流 21 。 在这种情况下,气流在实心箭头指示的方向上处于正压力下(流化工艺步骤)。 接下来,当切换阀 24  转向,通过换向鼓风机使气流方向反转 26  到虚线箭头指示的方向(合并处理步骤)。 在该固结处理步骤中,形成粉末层并将其压缩,并且通过向下的气流增加造粒粉末的硬度。 另一方面,在流化处理步骤中,在固结处理步骤中形成的粉末层由于向上的气流而破裂,并且在流化空气的研磨作用下产生几乎球形的粒状粉末。 切换阀 24  可能会反复转动。 通过控制风量和重复循环,可以调节造粒粉末的硬度。 另外,通过控制造粒时间,也可以调整造粒粉的平均粒径。 \n\n [0073] 在常规的流化床制粒过程中,在容器中利用向上的气流使粉末流化(或也称为“整流”)的过程步骤(即流化过程步骤)和压缩粉末的过程步骤 通过向下的气体流(即,固结处理步骤)对层进行分别进行。 例如,日本专利第3019953号(参见图3)中公开的流化和压缩机被设计成切换用于执行流化处理步骤的气流(在本文中将其称为“第一气流”)。  )进入用于执行固结工艺步骤的气流(在本文中称为“第二气流”),反之亦然。 因此,传统的机器不能在容器内同时产生这两种气流。 \n\n [0074] 本发明人通过实验发现并证实,通过将用于进行流化处理步骤的第一气流和用于进行固结处理步骤的第二气流提供给容器中的容器,可以更有效地生产稀土合金粒状粉末。 同时。 \n\n [0075] 据信这是因为稀土合金具有7.5g / cm 2的相对较重的绝对比重。 3  和/或因为通过利用相对弱的力例如剩磁来生产粒状粉末。 这是基于实验结果,当不使用粘合剂时,除非在允许第一和第二气流出现在同一容器中之后进行固结处理步骤,否则制粒粉末的产率会降低,但是当 使用粘合剂,在常规方法和发明方法之间没有感觉到差异。 然而,尚不清楚当允许同时存在第一气流和第二气流时,为什么可以更有效地生产粒状粉末。 \n\n [0076] 在下文中,将参照图1至图5详细描述根据本发明的优选实施方式的制造粒状粉末的方法和机器。  3和4。 \n\n [0077] 图。 图3示意性地示出了造粒粉末生产机的构造。 100 ,其可以有效地用于根据本发明的优选实施方式的造粒粉末的制造方法中。 无花果 4( a )和 4 ( b )是示意性地示出在根据本发明的优选实施方式的造粒粉末的制造方法中,气体在容器中的流动(流速)随时间变化的曲线图。 \n\n [0078] 造粒机 100  如图所示。  3包括一个容器(流化容器) 30 ,第一个频道 40 ( a )(已连接到容器) 30  并可以在容器中产生第一个向上的气流 30 和第二个频道 50 ( b ),也连接到容器 30  并会在容器中产生第二向下的气流 30 。 第一和第二频道 40 ( a )和 50 ( b )已连接到容器 30  彼此独立。 应该注意的是参考数字 40  和 50  标号“ a”和“ b”将主要用于表示第一和第二通道的物理结构,而附图标记a和b将主要用于表示第一和第二通道的气体流动路径。 \n\n [0079] 血管 30  具有接收容器的结构 62 底部装有稀土合金粉末。 底板(或底板) 62 b  容器的 62  具有透气性,例如可以由网或布制成。 考虑到工作效率,这种容器 62  优选使用。 但是,只要是容器,也可以采用其他结构。 30  包括具有透气性的底板。 \n\n [0080] 稀土合金粉末安装在底板上 62 b  容器的 62  从底板下方向上流动的第一股气体被赋予动能 62 b ,以便流化。 在这种情况下,稀土合金粉末通过利用稀土合金粉末的剩余磁化产生的团聚力和由赋予该合金的动能产生的翻滚作用而在基本零磁场下造粒。 粉末受第一气流影响。 另外,在底板上形成粉末层 62 b  由于粉末本身和/或第二气流的重量,然后被第二气流压缩,从而固结粉末。 \n\n [0081] 第一个频道 40  包括温度控制器 42 ,风扇(例如,鼓风机) 44 和管道 46 ,并连接(或耦合)到容器 30  通过阀门 47  和 48 ,从而定义了在容器内循环气体的第一通道a 30  (请参见箭头A 1  和一个 2  如图所示。  3)。 为了使稀土合金粉末的氧化最小化,优选使用惰性气体(诸如稀土气体或氮气)。 在该示例中,使用氮气。 应当注意,氧气相对于总气体的体积分数优选控制在0.1%以下。 \n\n [0082] 另外,如果稀土合金粉末的温度过高,则粉末的矫顽力和结块力都降低很多,以致于不容易制造粒状粉末。 为了避免这种情况和/或最小化稀土合金粉末的氧化,优选将气体温度控制为落入10℃至40℃的范围内,更优选在该范围内。 温度为20℃至30℃。可选地,如果需要,还可以提供用于从气体中除去水的湿度控制器。 \n\n [0083] 风扇 44  由温度控制器控制温度的气体产生第一股气流 42 。 容器内产生的第一股气流的流量 30  通过调节风扇的输出来控制 44  和/或阀门的开度 47 。 \n\n [0084] 第二频道 50  包括一个缓冲罐 52  和管道 36 ,并连接(或耦合)到容器 30  通过阀门 57  和 58 ,从而确定了第二条通道b,该第二条通道b使容器内的气体循环 30  (请参见箭头B 1  和B 2  如图所示。  3)。 要注意的是缓冲罐 52  连接到主管(例如工厂的氮气管) 54  通过监管者 53 。 供应到源管的氮气 34  可能有大约7 kg / cm的压力 2 ,由监管机构降低 33  到几公斤/厘米 2 。 容器内产生的第二种气流的流量 30  通过调节阀门的开度来控制 57  和 58 。 \n\n [0085] 第一个通道的两端 40  第二个通道的两端 50  都连接到船上 30  这样,气体流动路径基本上是封闭的。 因此,容器中氮气的状态(例如温度和湿度) 30  可以有效地控制氮气,还可以减少氮气的消耗。 然而,如果系统完全关闭,将很难控制气流。 因此,从容器排出氮气的结构 30  通过连接排气管,最好采用具有预定电阻的电阻 64  到船上 30  通过阀门 66 。 在这种情况下,排气管的阻力 64  优选地被控制使得容器内部的压力 30  保持高于容器外部的压力 30  (即大气压)。 \n\n [0086] 此外,稀土合金粉末易于氧化。 因此,如果稀土合金粉末的温度异常升高,则稀土合金粉末甚至可能爆炸。 因此,温度计 38  用于检测容器内部的温度 30  优选提供。 并且优选地提供控制电路以便至少停止风扇的操作。 44  当容器内的温度 30  超过预定温度。 可选地,阀门 47 , 48 , 57 , 58  和 66  可以是电磁阀,并且可以控制为在容器内部温度关闭时自行关闭 30  超过预定温度。 根据各种经验的结果,当使用基于R-Fe-B的合金时,在超过50°C的温度下极有可能发生快速氧化(可能会发生燃烧或爆炸)。因此,温度开始升高。 停止操作优选设定为50℃。 \n\n [0087] 在船上 30 ,底部及其周围的内径以容纳容器 62  与位于底部上方的主体部分不同。 如图1所示。 如图3所示,容器底部的内径D1 30  小于其主体部分的内径D2。 并且,越靠近主体部分,内径越大。 当船只 30  使用具有这样的结构,由第一通道产生的第一气流的流速 40  在船上 30  向上减小。 因此,可以有效地滴落在第一气流上漂浮的粉末。 底部的内径小于主体部分的内径D2,其底部的长度(或高度)约占容器总长度的20% 30 。 底部的最小内径D1(即底板所在部分的内径) 62 b  例如)位于大约D2的50%。 \n\n [0088] 造粒机 100  还包括磁场产生装置 60 可以对装在容器中的稀土合金粉末施加磁场 62 。 磁场产生装置 60  电磁体可以是包括线圈和磁轭的电磁体,并且优选地能够产生交变的消磁场。 如果在容器外部产生具有剩磁的稀土合金粉末 30  用磁场产生装置 60  可以自然省略。 \n\n [0089] 接下来,将参考图3至图6进行描述。  4( a )和 4 ( b )气体如何在容器中流动 30  在根据本发明的优选实施方案的制粒粉末的过程中改变它们的状态。 具体而言,  4( a 图1)示出了从操作的起点开始的一系列处理步骤(对应于一个循环)。  4( b )显示了包括破碎过程步骤在内的一系列过程步骤(对应于一个循环)。 \n\n [0090] 首先,将参考图2进行描述。  4( a )容器中气体的流动状态 30  将在容器之后 62 已在机器中的预定位置设置了填充有剩磁的稀土合金粉末的粉末 100 。 \n\n [0091] 当容器 62  设定好后,流量a 0  第一气流a和流量b 0  第二气流b的b均为零。 然后,温度控制器 42  和风扇 44  打开并且阀门 47  和 48  打开,从而在容器中产生第一气流a 30 。 第一气流a的流量逐渐增加以达到稳态流量a 1  不久。 在这种状态下,粉末在容器中经受翻滚作用的同时,在剩余磁化产生的聚集力的作用下成粒。 30 。 同时,部分粉末位于容器中心附近 30  (包括被颗粒化的颗粒)在重力作用下漂浮在第一气流a上,而另一部分粉末位于容器内壁周围 30 流速低的,由于自重而下降。 \n\n [0092] 在第一气流的流量保持预定时间(例如大约20分钟)基本恒定的情况下,阀门 57  和 58  打开第一个气流以产生第二气流b(其起点流量为b1)。 第二气流b的流量逐渐增加。 但是在第二气流b的流量达到其稳态流量b之前 2 ,第一气流a的流量开始减小(其中起点处的流量为a 2 )。 即,存在第一气体流量a的流量减少而第二气体流量b的流量增加的期间(即,a之间的期间)。 2  和b 2  如图所示。  4( a ))。 通过允许第一和第二气流a和b存在于同一容器中 30  以此方式在一段时间内,可以更有效地生产稀土合金粒状粉末。 原因尚不清楚。 但是,似乎如果第一气流a突然停止或第二气流b的流速比第一气流a的流速高得多,那么粒状粉末的滴落速度将非常快,以至于粒状粉末应 由于撞击而破碎成碎片。 同样,如果在第一气流a完全停止后开始产生第二气流b,则容器中将产生负压 30 ,因此很难控制压力,这是不利的。 \n\n [0093] 如上所述,如果第二气流b的流量增加而第一气流a的流量逐渐减小,则粒状粉末将不会由于落下时受到的冲击而破碎成碎片。 底板 62 b  但会在其上形成粉末层。 此后,粉末层将被第二气流b压缩和固结。 作为该固结过程的结果,造粒粉末的硬度增加。 \n\n [0094] 通过重复图7中所示的循环,就可以实现上述目的。  4( a ),可以获得具有足够硬度的粒状粉末。 但是,应注意,第二个循环及后续循环的起点处的第一气流a的流量不必为零(a 0 ),如图 4( a ),但可能等于流量a 3  在图3所示的循环的终点。  4( a )。 \n\n [0095] 然而,仅通过重复图7中所示的循环,就可以实现上述目的。  4( a ),已压缩在底板上的粉末层 62 b  不能充分粉碎,可能会产生粒径过大的颗粒。 因此,为了更确定地压碎粉末层,需要执行图9所示的循环。  4( b )最好进行。 \n\n [0096] 以下,从b点开始的处理步骤 1 图1所示的 4( b )上将进行描述。 在下面的示例中,流程步骤将由b点完成 1  如图所示。  4( a )到目前为止也进行了b 1 图1所示的 4( b ),然后是图3所示的处理步骤。  4( b )进行。 \n\n [0097] 开始产生第二气流b(流量b 1 如上文所述)。 在第二气流b的流量达到其稳态流量b之前 2 \',第一气流a的流量开始减小(从流量a开始 2 ”)。 之后,阀门 47  和 48  关闭以保持第一气流a停止(时间点a之间的α分钟 3 ′和一个 4 图1所示的 4( a ))。 如果风扇 44  在此期间保持运转,然后一部分管道 46  风扇之间 44  和阀门 47  会增加气压。 换句话说,阀门 47  应将其关闭直到获得预定的压碎粉末层的压力。 然后,通过关闭阀来停止第二气流b 57  和 58  (在b点 0 图1所示的 4( b )),并通过打开阀门产生第一气流a 47  和 48  (此时 0 图1所示的 4( b ))。 在这种情况下,流量a 0 容器中产生的第一气流a的\' 30  超过稳态流量a 1  (= a 2 图1所示的第一气流a)。  4( a ),因此可以有效地粉碎粉末层。 引起翻滚动作的第一气流的流量a通常保持基本恒定(a 1 =一个 2 ),如图 4( a ),但也可能是可变的。 在那种情况下,使粉末层破碎的第一气流a的流速优选高于引起翻滚作用的第一气流a的平均流速。 \n\n [0098] 在上述示例中,第一气流a的流量为a 0 通过操作阀门产生 57  和 58 。 可替代地,可以通过控制风扇的吹风能力来调节第一气流a的流速。 44 。 或者吹气能力控制也可以与气门控制相结合。 应当注意的是流量a 1 ′和一个 2 图1所示的 4( b )可以分别等于流量a 1  和一个 2  如图所示。  4( a )。 \n\n [0099] 如果利用剩余磁化形成的造粒粉末的尺寸达到一定水平,则形成磁闭合回路,并且造粒粉末的颗粒之间的磁引力减弱。 在这种情况下,图5所示的破碎周期将被执行。  4( b )不再需要。 因此,在通过重复进行图1所示的基本循环而能够得到规定的造粒粉的工序中,可以通过以下步骤进行。  4( a )和图5所示的破碎周期。  4( b 在前20个循环中,优选总共包括30次,例如5至10个破碎循环。 \n\n [0100] 应该注意的是,如果使用这种具有剩余磁化的材料粉末,则可以在比没有剩余磁化的材料粉末的情况更短的时间内(例如,大约是其一半的时间)获得预定的造粒粉末。 用来。 据信这是因为,当使用这种具有剩余磁化强度的材料粉末时,通过一次粒子之间的磁凝聚力容易产生制造粒状粉末的核。 \n\n [0101] 造粒粉末的平均粒径优选为0.05mm至3.0mm。 普通的造粒粉末包括很少的一次颗粒和非常少量的第三和其他高阶颗粒。 因此,次级颗粒的平均粒径可以被认为基本上代表了造粒粉末的平均粒径。 在本实施例中,将通过显微镜法得到的二次粒子的平均粒径用作造粒粉的平均粒径。 如果粒状粉末的平均粒径小于0.05mm,则不能显着改善流动性,并且难以获得具有足够密度的均匀压块。 然而,如果粒状粉末的平均粒径大于3mm,则空腔填充能力将降低,并且也难以获得具有足够密度的均匀压块。 粒状粉末更优选具有0.1mm至2.0mm的平均粒度。 \n\n [0102] 接下来,通过压制并压实以此方式获得的造粒粉末来制造压块。 在这个例子中,压块仅由粒状粉末制成。 压实过程可以用已知的压机进行。 通常,使用用于通过上下冲头将粉末压入模腔(或模孔)中的单轴压机。 造粒的粉末可以在例如充满或供应有氮气的高度气密的容器中逐批运输。 \n\n [0103] 将造粒的粉末加载到单轴压机的模腔中。 如日本反对公报第59-40560号,日本公开公报第10-58198号,日本公开公报中所述,可以用筛子或给料箱进行将粒状粉末装载到空腔中的工艺步骤。 实用新型出版物第63-110521号或日本公开出版物第2000-248301号。 这些文件中公开的方法在本文中将统称为“下车方法”。 \n\n [0104] 特别是在制造小型压粉体时,优选利用空腔将造粒的粉末测量为与空腔的容纳体积相对应的量。 例如,可以将在底部具有开口的给料箱移动到空腔上方,以使粒状粉末重力下落(即,本身),然后将溢出空腔的过量粒状粉末切下来。  。 以这种方式,可以相对均匀地装载预定量的粒状粉末。 自然有可能单独测量颗粒状的粉末,然后用漏斗将其装入模腔。 \n\n [0105] 在以这种方式将粒状粉末填充到空腔中之后,降低单轴压力机的上冲头以关闭空腔开口。 然后,向其施加取向磁场,从而将造粒的粉末分解成初级颗粒,并使初级颗粒与所施加的磁场对准。 本发明的优选实施方案的粒状粉末可以如预期在0.1T至0.8T的相对弱的磁场下分解成初级颗粒。然而,为了获得足够的取向度,大约0.5的磁场 优选施加T至约1.5T。 磁场的方向例如可以垂直于按压方向。 在以这种方式施加磁场的情况下,例如在98MPa的压力下将粉末单轴向地压在上下冲头之间。 结果,可获得具有0.5至0.7的相对密度(即,压实密度与真实密度的比)的压实体。 如果需要,磁场的方向可以平行于按压方向。 \n\n [0106] 接下来,在真空或惰性气氛中在约1,000℃至约1,180℃的温度下将所得成型体烧结约1小时至约6小时。 该优选实施方案的粒状粉末完全不包含粒化剂,或者包含少量的粒化剂,从而由于烧结过程而基本上可除去。 因此,不需要单独提供任何粘合剂去除工艺。 应当注意,常规的典型的粘合剂去除工艺是在惰性气氛中,在约2Pa的压力下,在约200℃至约800℃的温度下进行约3小时至约6小时。 \n\n [0107] 然后,在约450℃至约800℃的温度下对所得的烧结体进行时效处理约1小时至约8小时,从而获得基于R-Fe-B的烧结磁体。 此后,通过在任意阶段磁化R-Fe-B基烧结磁体作为最终产品来完成。 \n\n [0108] 根据本发明,如上所述使用具有优异的流动性和致密性的粒状粉末。 因此,可以将粒状粉末高度均匀地装载到腔体中,并且将装载量的变化最小化。 因此,通过压制过程获得的压块的质量和尺寸仅略有变化。 压块很少破裂或碎裂。 \n\n [0109] 此外,在该优选实施方案的粒状粉末中,其一次颗粒基本上在由剩余磁化产生的磁团聚力的作用下直接结合在一起。 因此,通过向其施加取向磁场,可以按预期将造粒的粉末分解成初级颗粒。 因此,初级粒子的取向度不会降低。 此外,还可以使如果造粒剂的碳残留在烧结体中而引起的磁特性的劣化最小化。 结果,可以获得具有优异磁性的烧结磁体。 因此,根据本发明,可以以高生产率生产高质量的基于R-Fe-B的合金烧结磁体。 \n\n 例子 \n\n [0110] 在下文中,将描述本发明的具体示例。 \n\n [0111] 以以下方式制备R-Fe-B基合金粉末。 通过使用硼铁合金来制备熔融合金,所述硼铁合金包括分别为99.9%和19.8质量%的B的电解铁以及纯度为99.7%以上的Nd和Dy作为起始原料。 由该熔融合金通过薄带连铸法得到具有组成为包括30.0质量%的Nd,5.0质量%的Dy,64.0质量%的Fe和1.0质量%的B的R-Fe-B基合金的薄片。  。 通过在惰性气体(例如氮气)中使用喷射磨将这些合金薄片细粉碎。 2  气体压力为58.8 MPa),从而制成平均粒径为3μm的原料粉末。 \n\n [0112] 接下来,通过向其施加交变去磁场(峰值磁场为1.0T),在该具体示例的材料粉末中产生剩余磁化。 \n\n [0113] 随后,通过流化床制粒法(例如,使用Fuji Paudal Co.,Ltd。制造的回转处理器)制备粒状粉末。 如本申请的申请人在日本专利申请No.2001-96572中所公开的那样,在制备代表实施例2和3以及比较例2和3的粒状粉末时,使用了聚乙烯和异链烷烃作为制粒剂。 在本发明的每个具体实施例和比较例中,定义了各种条件,使得所得的造粒粉末应具有0.5mm的平均粒径。 这样获得的粒状粉末的剩余磁化强度约为0.2mT。 在实施例1、2和3中,花费约15分钟来进行制粒工艺步骤。 另一方面,在比较例2和3中,花费大约30分钟来完成制粒工艺步骤。 应当注意的是,没有在粉末中使用原料粉末(未施加磁场),而在比较例No.1中照原样使用。 下表1总结了在实施例1、2和3以及比较例1、2和3中制备待压制粉末的条件。 \n\n [0114] \n\n   表格1  粉到 Granu- 剩余的 造粒 大约 休息  被压 迟到了吗? 磁化 代理商 角度  例子1 是 是 0质量% 约47度  例子2 是 是 1质量% 约46度  例子3 是 是 2质量% 约44度  比较 例如 没有 没有 0质量% 约52度  1  比较 例如 是 没有 1质量% 约49度  2  比较 例如 是 没有 2质量% 约44度  3 \n\n [0115] 表1还示出了待压制的各个粉末的静止角。 静止角大的粉末的流动性差。 因此,静止角越小,流动性越高。 在比较例1中,除非将原料粉末造粒,否则静止角约为52度,并且流动性差。 相反,在其中将粉末造粒的实施例1、2和3以及比较例2和3中,静置角减小到小于50度。 其中,与比较例2(添加了1质量%的造粒剂)相比,代表实施例1和2的被压制的粉末具有较小的休止角并且显示出更好的流动性。 就是说,可以看到,通过利用剩磁,即使添加的造粒剂比传统的少,流动性也可以提高。 应当注意,在以2质量%的量添加造粒剂的实施例3和比较例3中,没有感觉到流动性的差异。 \n\n [0116] 表1中所示的每种待压制粉末通过如上所述的使用进料箱的方法被装入长度为20mm,宽度为15mm,深度为10mm的腔中,然后单轴压制并压实 (在压力为98 MPa且垂直于挤压方向施加0.8 T的对准磁场的情况下)。 对于本发明的所有实施例和比较例,这些加载和压实工艺步骤均在相同条件下进行。 应当注意,在改变压制条件的情况下获得具有各种压坯密度(即生坯密度)的压坯。 \n\n [0117] 对于实施例1和比较例1,估计所得压块之间的质量变化(%)和填充密度的变化(σ)。将压块之间的质量变化计算为{(最大质量-最小 质量)/平均质量(n = 50)}×100(%)。 另外,填充密度的变化(σ)代表50个压块的质量分布的标准偏差。 在实施例1中,成形体之间的质量变化为约5%,这明显低于比较例No.1中的约15%的质量变化。在填充密度的变化(σ)中也观察到这种趋势。  。 具体而言,比较例1的填充密度的变化(σ)约为0.33,而实施例1的填充密度的变化(σ)低至0.18。 因此,可以看出通过造粒改善了流动性。 通过造粒自然也改善了可压实性。 在实施例1的压坯中观察到的破裂或碎裂的百分比远低于比较例9。在其他实施例中也证实了通过造粒获得的这些效果。 \n\n [0118] 在Ar气氛中在1,060℃下将每个所得压坯烧结约四小时,然后在600℃下进行时效处理一小时,从而获得烧结体。 之后,将该烧结体进一步以2,387kA / m磁化以获得烧结磁体。 对于本发明的每个实施例和比较例,获得了50个样品。 \n\n [0119] 图。 图5示出剩磁B r  (T)所得的烧结磁体。 从图可以看出, 在图5中,实施例1的Br(如图5中的实心圆所示)与比较例1的Br(如图5中的空心圆所示)之间基本上没有区别。 因此,烧结磁体表现出优异的磁性能。 添加了粒化剂的实施例2和3的Br与添加了相同量的粒化剂但没有残留磁化的原料粉末的比较例2或3的Br大致相等。 即使在利用剩余磁化使粉末造粒中,优选以尽可能少的量添加造粒剂。 \n\n [0120] 如上所述,通过利用由一次粒子的剩余磁化产生的磁凝聚力来制造粒状粉末,与利用该粒状粉末制造粒状粉末的情况相比,即使减少了粒化剂的添加量。 仅通过造粒剂的偶合力,至少可获得相同程度的流动性。 因此,与常规磁体相比,可以以至少相似的生产率来生产表现出更好的磁性能的烧结磁体。 此外,如果仅通过利用一次粒子的剩余磁化来制造造粒粉末,则可以基本上消除磁性能的劣化。 \n\n [0121] 接着,在实施例4〜6中,使用制造机制造造粒粉。 100 ,将进行描述。 还使用与实施例1至3相同的材料粉末。 \n\n [0122] 血管 30  内径D2为300毫米,内容物体积约为7×10 4  厘米 3 。 在图。  4( a )和 4 ( b ),流量a 1 =一个 2 =一个 1 \'=一个 2 约1 m 3 / min,流量a 0 约2.0 m 3 / min和流量b 2 = b 3 = b 2 \'= b 3 约0.75 m 3 /分钟。 装载约5kg的稀土合金材料粉末,并且将氮气的温度控制为约30℃。 \n\n [0123] 在制备代表实施例5和6的粒状粉末时,如本申请的申请人在日本专利申请第2001-96572号中所述以及如实施例2和3中那样,将聚乙烯和异链烷烃用作制粒剂。 在第5号和第6号中,还定义了各种条件,以使造粒粉末的平均粒径为0.5mm。 所得粒状粉末的剩余磁化强度约为0.2mT。 在实施例4至6中,制粒过程进行约15分钟。 下表2总结了实施例4至6的制备待压制粉末的条件及其静止角: \n\n [0124] \n\n    表2  粉到 剩余的 造粒 大约 休息  被压 颗粒状? 磁化 代理商 角度  例子4 是 是 0质量% 45度  例子5 是 是 1质量% 45度  例子6 是 是 2质量% 44度  \n\n [0125] 从表2可以看出,代表实施例4和5的压制粉末的静止角甚至比代表实施例1和2的压制粉末小。因此,通过使用生产机 100 ,流动性进一步提高。 但是,使用生产机获得的好处 100  静止角的减小并没有增加制粒过程的稳定性(或再现性)。 例如,通过比较所得造粒粉末的静止角的变化,发现在实施例1中,静止角从45度变化到49度,而静止角变化较小,即从44度变化到49度。 在实施例4中为45度。 参照图2,或者使用日本专利公开No.3019953(参见该出版物的图3)中公开的造粒机,在容器中向上的气流上吹塑粉末的处理步骤(即吹塑处理步骤)和 以向下的气流压缩粉末层的处理步骤(即固结处理步骤)作为两个不同的处理步骤进行。 但是,本发明人发现,通过使用该制造机,可以更有效地制造稀土合金造粒粉。 100  因此,用于完成吹塑工艺步骤的第一气流和用于完成固结工艺步骤的第二气流同时存在于同一容器中。 如实施例4所示,当不使用制粒剂时,可获得显着的效果。 \n\n [0126] 使用表2所示的表示实施例4〜6的压粉体,与实施例1同样地制作了成形体,并对这些成形体的质量(%)和填充密度(σ)的变化进行了评价。 实施例4的压坯的质量变化约为4%,甚至小于实施例1的质量变化。也观察到与填充密度(σ)变化相同的趋势。 具体地说,实施例4的填充密度变化(σ)可以提高到0.16。 代表实施例5和6的压坯的质量变化(%)和填充密度变化(σ)至少与实施例2和3相当。 \n\n [0127] 将代表实施例4至6的每个压块在Ar气氛中在1,060℃下烧结约4小时,然后在600℃下进行时效处理1小时,从而获得烧结体。 之后,将该烧结体进一步以2,387kA / m磁化以获得烧结磁体。 对于实施例4至6的每一个,获得了50个样品。代表实施例4、5和6的烧结磁体的剩磁Br(T)分别大约等于实施例1、2和3的剩磁。 通过使用生产机器 100 与常规方法相比,可以更恒定地生产粒状粉末。 因此,与常规方法相比,可以用较少量的粒化剂获得粒状粉末(或什至根本没有粒化剂)。 结果,可以获得比常规磁体表现出更好的磁性能(例如,剩磁Br)的烧结磁体。 \n\n 工业适用性 \n\n [0128] 本发明提供了一种稀土合金造粒粉的制造方法,该方法具有良好的流动性和良好的致密性,并且使得可以制造具有优异的磁性能的磁体。 本发明提供一种通过使用这样的造粒粉末来高生产率地制造优质的稀土合金烧结体的方法。 \n\n [0129] 根据本发明,可以在不降低磁性能的情况下改善稀土合金粉末的流动性和致密性。 因此,即使在现有技术中,其形状过于复杂而难以压制和压缩,并且在一定程度上已经牺牲了其磁性能的烧结磁体,也可以具有改善的磁性能。 另外,可以缩短制粒时间并且可以省略粘合剂去除过程。 结果,可以提高稀土类烧结磁体的生产率。');
INSERT INTO `os_patent_instruction_text` VALUES (12972, 22801, '[0001] Die vorliegende Erfindung betrifft ein Verfahren zur Herstellung eines Permanentmagneten und betrifft eine Pressvorrichtung bzw. einePresse.\n\nSTAND DER TECHNIK\n\n\n\n[0002] Ein Seltenerdmagnet auf R-Fe-B Basis (wobei R eines der Seltenerdmetalle, einschließlich Y ist, Fe Eisen ist und B Bor ist) ist ein typischerHochleistungspermanentmagnet und weist eine Struktur auf, welche eine R2Fe14B Phase, die eine tertiäre tetragonale Verbindung ist, als eineHauptphase umfasst und ausgezeichnete magnetische Leistungen aufweist.\n\n\n\n[0003] Solche Magnete aus seltenen Erden auf R-Fe-B Basis werden grob in Sintermagnete und Verbundmagnete klassifiziert. Ein Sintermagnetwird hergestellt durch das Kompaktieren eines feinen Pulvers einer Magnetlegierung auf R-Fe-B Basis (mit einer mittleren Teilchengröße von einigen&mgr;m) in einer Presse und anschließend Sintern des resultierenden Presskörpers. Auf der anderen Seite wird ein Verbundmagnet hergestelltdurch das Kompaktieren einer Mischung (d.h. eines Verbundes bzw. eines Gemisches) eines Pulvers einer Magnetlegierung auf R-Fe-B Basis (mitTeilchengrößen von ungefähr 100 &mgr;m) und einem Bindemittelharz in einer Presse.\n\n\n\n[0004] Der Sintermagnet wird aus einem Pulver mit einer relativ kleinen Teilchengröße hergestellt und daher zeigen die jeweiligen Pulverteilcheneine magnetische Anisotropie. Aus diesem Grund wird ein ausrichtendes bzw. orientierendes Magneffeld an das von der Presse kompaktierte Pulverangelegt, wodurch ein Presskörper erhalten wird, bei welchem die Pulverteilchen in Richtung des Magnetfeldes ausgerichtet sind.\n\n\n\n[0005] Bei dem Verbundmagneten weisen die verwendeten Pulverteilchen Teilchengrößen auf, die die kritische Größe der einzelnen Domäneüberschreiten, und zeigen normalerweise keine magnetische Anisotropie und können daher unter einem angelegten Magnetfeld nicht ausgerichtetwerden. Um demzufolge einen anisotropen Verbundmagneten herzustellen, bei welchem die Pulverteilchen in bestimmte Richtungen ausgerichtetsind, muss ein Verfahren zur Herstellung eines magnetischen Pulvers bereitgestellt werden, bei welchem die jeweiligen Pulverteilchen die magnetischeAnisotropie zeigen.\n\n\n\n[0006] Um ein Seltenerdlegierungspulver für einen anisotropen Verbundmagneten herzustellen, wird zur Zeit ein HDDR (Hydrierungs-Disproportionierungs-Desorptions-Rekombinations)-Verfahren durchgeführt. Das „HDDR\" Verfahren bedeutet ein Verfahren, wobei dieHydrierung, Disproportionierung, Desorption und Rekombinierung in dieser Reihenfolge durchgeführt werden. Bei diesem HDDR Verfahren wirdein Barren oder ein Pulver einer Legierung auf R-Fe-B Basis bei einer Temperatur von 500 °C bis 1.000 °C in einer H2-Gasatmosphäre oder einerMischung aus einem H2-Gas und einem Schutzgas gehalten, um so Wasserstoff zu einzuschließen. Anschließend wird der hydrierte Barren oder dasPulver einem Desorptionsverfahren bei einer Temperatur von 500 °C bis 1.000 °C unterworfen, bis eine Vakuumatmosphäre mit einem H2-Partialdruckvon 13 Pa oder weniger oder eine Schutzgasatmosphäre mit einem H2-Partialdruck von 13 Pa oder weniger erzeugt wird. Anschließend wird derdesorbierte Barren oder das Pulver abgekühlt, wodurch ein magnetisches Legierungspulver erhalten wird.\n\n\n\n[0007] Ein Legierungspulver auf R-Fe-B Basis, hergestellt durch solch ein HDDR Verfahren zeigt eine große Koerzitivkraft und weist magnetischeAnisotropie auf. Das Legierungspulver weist solche Eigenschaften auf, da die Metallstruktur im Wesentlichen eine Anhäufung von Kristallenist, mit sehr geringen Größen von 0,1 &mgr;m bis 1 &mgr;m. Insbesondere wird die hohe Koerzitivkraft erzielt, da sich die Korngrößen der sehrkleinen Kristalle, welche durch das HDDR Verfahren erhalten werden, in der Nähe der kritischen Größe der einzelnen Domain einer tetrogonalenVerbindung auf R2Fe14B Basis befinden. Die Anhäufung solcher sehr kleinen Kristalle der tetragonalen Verbindung auf R2Fe14B Basis wird hier als eine„rekristallisierte Textur\" bezeichnet. Verfahren zur Herstellung eines Legierungspulvers auf R-Fe-B Basis mit der rekristallisierten Textur durchdas HDDR Verfahren sind in den Japanese Gazettes for Opposition Nr. 6-82575 und 7-68561 offenbart.\n\n\n\n[0008] Wird jedoch ein anisotroper Verbundmagnet aus einem magnetischen Pulver hergestellt, welches durch das HDDR Verfahren hergestelltwurde (welches im Folgenden als ein „HDDR Pulver\" bezeichnet wird), treten die folgenden Probleme auf.\n\n\n\n[0009] Ein Presskörper, der durch das Pressen einer Mischung (d.h. eines Verbundes) des HDDR Pulvers und eines Bindemittelharzes unter einemausrichtenden Magnetfeld hergestellt wird, wird durch das ausrichtende Magnetfeld stark magnetisiert. Wenn der Presskörper magnetisiert bleibt,kann jedoch ein Magnetpulver von der Oberfläche des Presskörpers angezogen werden oder die Presskörper können sich gegenseitig anziehen odermiteinander in Kontakt kommen, wodurch sie zum Beispiel Abplatzungen erhalten können. In diesem Fall wird es sehr schwierig, solche Presskörperwährend der nachfolgenden Herstellungsverfahrensschritte zu handhaben. Aus diesem Grund muss der Presskör\n\nper vor dem Entladen aus der Presse ausreichend entmagnetisiert werden. Demzufolge muss, bevor der magnetisierte Presskörper aus der Presseausgestoßen wird, der Presskörper einem „Entmagnetisierungsverfahren\" unterworfen werden, indem ein Entmagnetisierungsfeld, wieein Demagnetisierungsfeld, angelegt wird, dessen Richtung dem des ausgerichteten Magnetfeldes entgegengesetzt ist, oder ein alternierendesDämpfungsfeld an dem Presskörper durchgeführt werden. Solch ein Entmagnetisierungsverfahren benötigt jedoch einen langen Zeitraum, wie einige10 Sekunden. Demzufolge, ist in diesem Fall die Zyklusdauer des Pressverfahrens doppelt so lang oder noch länger, wie in dem Fall, in dem keinEntmagnetisierungsverfahren durchgeführt wird (d.h. die Zyklusdauer eines isotropischen Verbundmagneten). Wenn die Zyklusdauer auf diese Weiseausgedehnt wird, verringert sich die Massenherstellung und die Herstellungskosten des Magneten werden unbeabsichtigt erhöht.\n\n\n\n[0010] Bei einem Sintermagneten dagegen bleibt der Presskörper nur gering magnetisiert, da das magnetische Pulvermaterial von Anfang an eineniedrige Koerzitivkraft aufweist, auch wenn der Presskörper nicht ausreichend entmagnetisiert ist. Des Weiteren wird in dem Sinterverfahrensschrittdas magnetische Pulver einer erhöhten Temperatur ausgesetzt, die höher ist als dessen Curie-Temperatur. Daher wird das Magnetpulver vollständigentmagnetisiert, bevor es einem Magnetisierungsverfahrensschritt unterworfen wird. Wenn im Gegensatz dazu der Presskörper, wie bei einemanisotropen Verbundmagnet, magnetisiert bleibt, wenn er aus der Pressvorrichtung entladen wird, dann bleibt die Magnetisierung bis zu demMagnetisierungsverfahrensschritt erhalten. Und wenn der Verbundmagnet in dem Magnetisierungsverfahrensschritt magnetisiert bleibt, ist der Magnetaufgrund der Hysterese-Eigenschaften des Magneten schwer zu magnetisieren.\n\n\n\n[0011] US 2001/0018029 A1 offenbart ein Magnetpulverzufuhrverfahren zum Zuführen eines magnetischen Pulvers in den Hohlraum einer Presse.Das magnetische Pulver wird kompaktiert, um einen Magneten zu bilden. EP 1 447 827 A1 offenbart einen Permanentmagneten.\n\n\n\n[0012] Um die oben beschriebenen Probleme zu überwinden, ist es ein Hauptgegenstand der vorliegenden Erfindung, ein Verfahren und einePresse bereitzustellen, zur Herstellung eines leicht magnetisierbaren Permanentmagneten (d.h. neben anderen Gegenständen einen anisotropenVerbundmagneten) bei reduzierten Kosten, indem die Probleme vermieden werden, die durch die unerwünschte remanente Magnetisierung desPresskörpers bewirkt wird.\n\n\n\n[0013] Dieser Gegenstand wird im Hinblick auf das Verfahren gemäß Anspruch 1 gelöst. Bevorzugte Ausführungsformen sind in denUnteransprüchen 2 bis 11 angeführt. Die vorliegende Erfindung stellt des Weiteren eine Presse zur Verfügung, wie in den Ansprüchen 12 und 13definiert.\n\nOFFENBARUNG DER ERFINDUNG\n\n\n\n[0014] Ein Verfahren zur Herstellung eines Permanentmagneten gemäß der vorliegenden Erfindung ist ein Verfahren zur Herstellung einesPermanentmagneten, indem ein magnetisches Pulver in den Hohlraum einer Presse eingeführt wird und das magnetische Pulver kompaktiert wird.Dieses Verfahren umfasst die Schritte: Erzeugen eines magnetischen Feldes wie in Anspruch 1 definiert, als ein statisches Magnetfeld in einem Raum,der den Hohlraum umfasst, und Transportieren des magnetischen Pulvers ins Innere des Hohlraumes, während das magnetische Pulver parallel zumMagnetfeld ausgerichtet wird; und Kompaktieren des magnetischen Pulvers im Inneren des Hohlraumes, wodurch ein kompaktiertes magnetischesPulver erhalten wird.\n\n\n\n[0015] In einer bevorzugten Ausführungsform wird das schwache Magnetfeld unter Verwendung eines magnetischen Elementes erzeugt, welchesständig magnetisiert wird.\n\n\n\n[0016] In einer anderen Ausführungsform wird das schwache Magnetfeld auch während des Schrittes des Kompaktieren des magnetischen Pulversim Inneren des Hohlraumes angelegt.\n\n\n\n[0017] In einer anderen bevorzugten Ausführungsform wird das schwache Magnetfeld solchermaßen eingestellt, dass der Presskörper, welchergerade durch die Presse gepresst worden ist, eine Oberflächenflussdichte von 0,005 Tesla oder weniger aufweist.\n\n\n\n[0018] Gemäß der Erfindung definiert ein schwaches Magnetfeld ein Magnetfeld mit einer Stärke in dem Bereich von 8 kA/m bis 120 kA/m im Innerendes Hohlraumes.\n\n\n\n[0019] Die Feldstärke des schwachen Magnetfeldes wird vorzugsweise auf eine obere Grenze von 100 ka/m oder weniger und noch bevorzugter 80kA/m oder weniger eingestellt.\n\n\n\n[0020] In einer anderen bevorzugten Ausführungsform wird das kompaktierte magnetische Pulver, nachdem das magnetische Pulver im Inneren desHohlraumes kompaktiert wurde, aus dem Hohlraum ausgeführt, ohne dass dieses einem Entmagnetisierungsverfahren unterworfen wird.\n\n\n\n[0021] In einer anderen bevorzugten Ausführungsform ist das magnetische Element eines der Elemente, die die Pressform der Presse bilden.\n\n\n\n[0022] In einer anderen bevorzugten Ausführungsform ist wenigstens ein Teil des magnetischen Elements ein Permanentmagnet.\n\n\n\n[0023] In einer anderen bevorzugten Ausführungsform ist wenigstens ein Teil des magnetischen Pulvers ein HDDR Pulver.\n\n\n\n[0024] In einer anderen bevorzugten Ausführungsform umfasst die Presse: eine Pressform mit einem Durchlass bzw. einer Durchgangsöffnung;einen Kern, welcher im Inneren der Durchgangsöffnung und relativ zu dieser hin und her bewegt wird; einen unteren Pressstempel, welcher zwischender Innenfläche der Durchgangsöffnung und der Außenfläche des Kerns und relativ zu der Pressform hin- und herbewegt wird, wie in Anspruch 12definiert. Der Schritt des Transportierens des magnetischen Pulvers ins Innere des Hohlraumes umfasst die Schritte: Positionieren einer Einfüllbox,welche das magnetische Pulver umfasst, über die Durchgangsöffnung der Pressform, nachdem die Durchgangsöffnung mit dem unteren Pressstempelverschlossen wurde; Bewegen des Kernes nach oben, relativ zu der Pressform; und Bewegen der Pressform nach oben relativ zum Kern, wodurch derHohlraum unter der Einfüllbox definiert wird.\n\n\n\n[0025] Eine Presse gemäß der vorliegenden Erfindung umfasst: eine Pressform mit einer Durchgangsöffnung; einen oberen Pressstempel undeinen unteren Pressstempel, die geeignet sind, sich im Inneren der Durchgangsöffnung und relativ zur Pressform hin- und herzubewegen; und einenPulvereinfüller zum Einfüllen eines magnetischen Pulvers in einen Hohlraum, der im Inneren der Durchgangsöffnung der Pressform definiert ist. DiePresse umfasst des Weiteren Elemente, die zu Ausrichtungszwecken magnetisiert wurden. Die Elemente werden verwendet, um ein schwachesMagnetfeld wie in Anspruch 12 definiert, als ein statisches Magnetfeld auf das magnetische Pulver anzulegen, welches in den Hohlraum eingefüllt wird.\n\n\n\n[0026] In einer bevorzugten Ausführungsform ist wenigstens eins der Elemente, die zu Ausrüstungszwecken magnetisiert worden sind, einPermanentmagnet.\n\nKURZE BEZEICHNUNG DER ZEICHNUNGEN\n\n\n\n[0027] Fig. 1(a) bis Fig. 1(d) sind Querschnitte, die zeigen wie die Hauptelemente einer Presse gemäß einer bevorzugten Ausführungsform dervorliegenden Erfindung in den jeweiligen Herstellungsverfahrensschritten betrieben werden.\n\n\n\n[0028] Fig. 2 zeigt eine Anordnung, in welcher ein Permanentmagnet als ein magnetisches Element zur Erzeugung eines schwachen ausrichtendenMagnetfeldes verwendet wird.\n\n\n\n[0029] Fig. 3(a) bis Fig. 3(d) sind Querschnitte, welche zeigen, wie die Hauptelemente einer Presse gemäß einer zweiten spezifischen bevorzugtenAusführungsform der vorliegenden Erfindung in den jeweiligen Herstellungsverfahrensschritten betrieben werden.\n\n\n\n[0030] Fig. 4 zeigt eine Konfiguration für die Presse zur Verwendung in der zweiten bevorzugten Ausführungsform der vorliegenden Erfindung.\n\n\n\n[0031] Fig. 5 zeigt einen dünnen ringförmigen anisotropen Verbundmagneten, welcher durch die vorliegende Erfindung erhalten wird.\n\n\n\n[0032] Fig. 6(a) bis Fig. 6(e) sind Querschnitte, die zeigen, wie die Hauptelemente einer Presse gemäß einer anderen spezifischen bevorzugtenAusführungsform der vorliegenden Erfindung in den jeweiligen Herstellungsverfahrensschritten betrieben werden.\n\n\n\n[0033] Fig. 7(a) bis Fig. 7(e) sind Querschnitte, welche zeigen, wie die Hauptelemente einer Presse gemäß noch einer anderen spezifischenbevorzugten Ausführungsform der vorliegenden Erfindung in den jeweiligen Herstellungsverfahrensschritten betrieben werden.\n\n\n\n[0034] Fig. 8 zeigt eine Konfiguration für eine andere Presse zur Verwendung in der zweiten bevorzugten Ausführungsform der vorliegendenErfindung.\n\n\n\n[0035] Fig. 9 zeigt eine Konfiguration für noch eine andere Presse zur Verwendung in der zweiten bevorzugten Ausführungsform der vorliegendenErfindung.\n\n\n\n[0036] Fig. 10 zeigt eine Kurve, die die Beziehung zwischen der Feldstärke eines schwachen Magnetfeldes, das im Inneren eines Hohlraumeserzeugt wurde, und dem maximalen Energieprodukt (BH)max des resultierenden anisotropen Verbundmagneten darstellt.\n\n\n\n[0037] Fig. 11 zeigt eine Kurve, die eine Beziehung zwischen der Feldstärke eines schwachen Magnetfeldes, das im Inneren eines Hohlraumeserzeugt wurde, und dem Fluss je Einheitsgewicht des resultierenden anisotropen Verbundmagneten darstellt.\n\nBESTE WEISE ZUR DURCHFÜHRUNG DER ERFINDUNG\n\n\n\n[0038] Die vorliegenden Erfinder haben herausgefunden, dass wenn ein schwaches Magnetfeld, wie in Anspruch 1 definiert, als ein statischesMagnetfeld auf ein Magnetpulver angelegt wird, das in den Hohlraum einer Presse eingeführt wird, ein Permanent\n\nmagnet mit einem ausreichend hohen Maß an Ausrichtung erzielt werden kann, ohne dass ein stark ausrichtendes Magnetfeld auf diesen angelegtwerden muss, wie bei den herkömmlichen Verfahren. Die vorliegenden Erfinder erhielten die grundlegende Idee der vorliegenden Erfindung auf dieseWeise.\n\n\n\n[0039] Gemäß der vorliegenden Erfindung ist die Feldstärke des Magnetfeldes, welches zu Ausrichtungszwecken angelegt werden soll, so schwach,dass die remanente Magnetisierung des wie-gepressten Presskörpers ausreichend reduziert werden kann. Daher besteht keine Notwendigkeit, einzusätzliches Entmagnetisierungsverfahren daran durchzuführen.\n\n\n\n[0040] Es sollte festgehalten werden, dass ein Verfahren zur wirksamen Ausrichtung eines magnetischen Pulvers durch Anlegen einesausrichtenden Magnetfeldes an ein Magnetpulver, welches in einen Hohlraum transportiert (d.h. getropft) wird, bereits in den offengelegten japanischenVeröffentlichungen Nr. 2001-93712 und 2001-226701 beschrieben ist. In der vorliegenden Erfindung wird jedoch ein Kompaktierungsverfahren füreinen Permanentmagneten mit einem deutlich kleineren Magnetfeld durchgeführt, als in irgend einer dieser Veröffentlichungen offenbart, wodurch dieOberflächenflussdichte, die aus der remanenten Magnetisierung des Presskörpers resultiert, auf 0,005 Tesla oder weniger reduziert wird, ohne dassein Entmagnetisierungsverfahren durchgeführt werden muss. Im Gegensatz zu den herkömmlichen Verfahren muss gemäß der vorliegenden Erfindungkein ausrichtender Magnetfeldgenerator mit großer Größe eingesetzt werden, und die Zyklusdauer des Pressverfahrens kann deutlich verkürzt werden.AUSFÜHRUNGSFORM 1\n\n\n\n[0041] Im Folgenden wird eine erste spezifische bevorzugte Ausführungsform der vorliegenden Erfindung unter Bezugnahme auf die begleitendenZeichnungen beschrieben. In dieser bevorzugten Ausführungsform wird ein anisotroper Verbundmagnet erzeugt.\n\n\n\n[0042] Fig. 1(a) bis Fig. 1(d) zeigen Hauptverfahrungsschritte (d.h. von dem Verfahrensschritt des Einfüllens eines Pulvers unter einemausrichtenden Magnetfeld bis zu dem Verfahrensschritt des Kompaktierens des Pulvers) eines Herstellungsverfahrens eines Magneten gemäß dervorliegenden Erfindung. Die Presse 10  , welche in Fig. 1 dargestellt ist, umfasst eine Pressform 2  , mit einer Durchgangsöffnung 1  , einen oberenPressstempel 3  und einen unteren Pressstempel 4  , welche sich im Inneren der Durchgangsöffnung 1  und relativ zu der Durchgangsöffnung hin- undherbewegen können und einen Pulvereinfüller (z.B. Einfüllbox), um ein magnetisches Pulver (z.B. einen Verbund) 5  in einen Hohlraum einzufüllen,welcher im Inneren der Durchgangsöffnung 1  der Pressform 2  definiert ist.\n\n\n\n[0043] In dieser bevorzugten Ausführungsform ist wenigstens ein Teil des magnetischen Elementes (hergestellt aus einem ferromagnetischenMaterial), welches als die Pressform 2  verwendet wird, magnetisiert. Daher kann ein schwaches Magnetfeld als ein statisches Magnetfeld auf dasmagnetische Pulver 5  angelegt werden, während dieses in den Hohlraum eingeführt wird. Das Maß der Magnetisierung wird so definiert, dass dieFeldstärke des schwachen Magnetfeldes, welches im Inneren des Hohlraumes erzeugt wird, in dem Bereich von 8 kA/m bis 120 kA/m fällt (gemessen inder Mitte des Hohlraumes). Das magnetisierte magnetische Element bildet ständig ein schwaches Magnetfeld als ein statisches Magnetfeld (wie durchdas Bezugszeichen „M\" in Fig. 1 identifiziert) im Inneren des Hohlraumes, wodurch die zuzuführende Verbindung geeignet ausgerichtet wird.\n\n\n\n[0044] Das magnetische Element, welches verwendet wird, um das schwache Magnetfeld als das statische Magnetfeld zu erzeugen, istvorzugsweise in der Nähe des Hohlraumes bereitgestellt. Die spezifische Anordnung und Konfiguration kann jedoch gemäß der gewünschtenMagnetfeldverteilung geeignet gewählt werden. Eine Pressform, bereitgestellt für eine normale Presse, umfasst ein Element (oder einen Bereich),welcher aus einem ferromagnetischen Material besteht. Wenn demzufolge das Element (oder der Bereich) unter einem starken Magnetfeldmagnetisiert wird, wird eine Magnetisierung mit einem notwendigen Maß erzielt. Das magnetische Element kann magnetisiert werden bevor diePressform in die Presse eingeführt wird oder nachdem die Pressform bereits in die Presse eingeführt wurde. Eine herkömmliche Presse für anisotropeVerbundmagneten umfasst eine Spule zur Erzeugung eines starken ausrichtenden Magnetfeldes, welches anschließend auf das zugeführte Pulverangelegt wird. Daher kann auch ein Teil der Pressform durch das starke Magnetfeld magnetisiert werden, welches durch diese Spule erzeugt wird.\n\n\n\n[0045] Es sollte festgehalten werden, dass anstelle des Magnetisierens eines Teils der Pressform 2  , ein Permanentmagnet in die Pressform2  eingebettet sein kann oder um die Pressform 2  herum bereitgestellt sein kann. Fig. 2(a) und Fig. 2(b) zeigen ein Beispiel, wobei ein PaarPermanentmagnete (d.h. Seltenerdsintermagnete) 7  an den rechten und linken Seiten der Pressform 2  angeordnet sind. In diesem Beispiel wird dasausrichtende Magnetfeld in dem Hohlraum durch die zwei Permanentmagneten 7  erzeugt. Beim Erzeugen eines ausrichtenden Magnetfeldes durchAnordnung der Permanentmagneten 7  , wenn die Anordnung modifiziert wird, indem die Anzahl oder das Maß der Magnetisierung der verwendeten Permanentmagneten geeignet verändert wird, kann auch eine neuartige ausgerichtete Magnetfeldverteilung gebildet werden, welche durch keinherkömmliches Verfahren erzielt werden konnte.\n\n\n\n[0046] Im Folgenden wird ein Verfahren zur Herstellung eines anisotropen Verbundmagneten mit der in Fig. 1 dargestellten Vorrichtung beschrieben.\n\n\n\n[0047] Zunächst wird eine Mischung (d.h. ein Verbund) 5  aus dem HDDR Pulver, welches oben beschrieben wurde, und einem Bindemittel (d.h. einBindemittelharz) hergestellt. Die Einfüllbox 6  wird mit diesem Verbund 5  angefüllt und anschließend in eine Position grade oberhalb des Hohlraumesder Pressform 2  der Presse transportiert, wie in den Fig. 1(a) und Fig. 1(b) dargestellt. Anschließend fällt der Verbund 5  in den Hohlraum und fülltden Hohlraum aus. Während der Hohlraum mit dem Pulver auf diese Weise gefüllt wird, werden die Pulverteilchen, die in dem Verbund 5  enthaltensind, wirksam unter einem schwachen Magnetfeld als ein statisches Magnetfeld ausgerichtet. Man nimmt an, dass dies daran liegt, dass die jeweiligenPulverteilchen, die in den Hohlraum transportiert werden, relativ einfach rotieren können, während sie in den Hohlraum fallen.\n\n\n\n[0048] Die vorliegenden Erfinder haben über Experimente festgestellt, dass der Verbund 5  , der in den Hohlraum eingeführt wird, in den Hohlraumjeweils bisschen für bisschen über einen relativ langen Zeitraum geschüttet werden sollte, anstelle einer großen Menge zu einem Zeitraum. Der Grundhierfür wird wie folgt angenommen. Insbesondere wenn der Verbund 5  mit relativ großen Anteilen zugeführt wird, wird die freie Bewegung (z.B. unteranderen Dingen die Rotation) der jeweiligen Pulverteilchen gestört und das Maß der Ausrichtung verringert sich. Wird dagegen der Verbund 5  inkleinen Mengen zugeführt, können die jeweiligen Pulverteilchen relativ frei rotieren und können auch unter einem schwachen Magnetfeld einfachausgerichtet werden.\n\n\n\n[0049] Wenn ein starkes Magnetfeld von einer herkömmlichen Spule zum Anlegen eines ausrichtenden Magnetfeldes auf den Verbund 5  angelegtwürde, der in den Hohlraum eingeführt wurde, würden sich die Pulverteilchen in Richtung des ausrichtenden Magnetfeldes zwischen den Innenwändendes Hohlraumes verbinden und so den Hohlraum teilweise verstopfen. In diesem Fall kann der Hohlraum mit dem Pulver nicht gleichmäßig gefülltwerden. Wird dagegen ein relativ schwaches Magnetfeld an den Verbund 5  angelegt, wie in dieser bevorzugten Ausführungsform durchgeführt, werdendie Pulverteilchen kaum magnetisch miteinander verbunden.\n\n\n\n[0050] Anschließend, nachdem die Einfüllbox 6  zurück von oberhalb des Hohlraumes in eine zurückgezogene Position gebracht wurde, wie in Fig.1(c) dargestellt, wird der obere Pressstempel 3  wie in Fig. 1(d) dargestellt abgesenkt, wodurch der Verbund 5  in dem Hohlraum verdichtet wird und einPresskörper 7  erhalten wird.\n\n\n\n[0051] In dieser bevorzugten Ausführungsform wird das zugeführte Pulver unter einem Magnetfeld ausgerichtet. Daher kann auch ein sehrschwaches Magnetfeld mit 8 kA/m bis 120 kA/m ein ausreichend hohes Maß an Ausrichtung erzielen. Ist im Gegensatz dazu das angelegte Magnetfeldzu stark (d.h. mehr als 800 kA/m wie bei einem herkömmlichen ausrichtenden Magnetfeld), würden sich die Pulverteilchen magnetisch miteinandervernetzen und so unbeabsichtigt das glatte Zuführen des Pulvers stören.\n\n\n\n[0052] Gemäß dieser bevorzugten Ausführungsform kann die Magnetisierung des wiegepressten Presskörpers 7  (d.h. die remanenteMagnetisierung) wenigstens um eine Größenordnung reduziert werden, im Vergleich mit einem herkömmlichen Verfahren. Daher werden dieverschiedenen Maßnahmen, die bei dem herkömmlichen Verfahrensschritt des Ausrichtens des beladenen Pulvers unter einem starken Magnetfeldnotwendig waren (z.B. Erzeugen eines sehr kleinen Raums oberhalb des Pulvers in dem Hohlraum, um das Pulver leichter ausrichten zu können,Ausrichten des Pulvers in solch einem Zustand und unmittelbares Pressen und Verdichten des Pulvers, um einen Presskörper zu erhalten) nichtlänger benötigt. Zusätzlich muss der Presskörper 7  keinem Entmagnetisierungsverfahren unterworfen werden. Als ein Ergebnis kann gemäß dieserbevorzugten Ausführungsform die Zyklusdauer des Pressverfahrens auf die Hälfte oder weniger als die Dauer des herkömmlichen anisotropenVerbundmagneten verkürzt werden (d.h. ungefähr die Hälfte dessen eines isotropen Magneten).\n\n\n\n[0053] Des Weiteren wird gemäß dieser bevorzugten Ausführungsform das ausrichtende Magnetfeld durch ein schwach magnetisiertesmagnetisches Element erzeugt. Daher wird das ausrichtende Magnetfeld kontinuierlich angelegt und nicht nur während des Einfüllens des Pulvers,sondern auch während des Verdichtens des Verbunds 5  zwischen den oberen und unteren Pressstempeln 3  und 4  . Als ein Ergebnis können gestörteOrientierungen, welche leicht während des Kompaktierungsverfahrens auftreten können, minimiert werden.\n\nAUSFÜHRUNGSFORM 2\n\n\n\n[0054] Im Folgenden wird eine zweite spezifische bevorzugte Ausführungsform der vorliegenden Erfindung unter Bezugnahme auf die Fig. 3 bis Fig.7 beschrieben. In dieser bevorzugten Ausführungsform wird ein radial ausgerichteter ringförmiger anisotroper Verbundmagnet erzeugt. Insbesonderewird ein im Wesentlichen radial ausgerichteter dünner ringför\n\nmiger anisotroper Verbundmagnet 11  , wie in Fig. 5 dargestellt, unter Verwendung der in Fig. 4(a) und Fig. 4(b) dargestellten Pressform erhalten.\n\n\n\n[0055] Die Pressform 2  , welche in dieser bevorzugten Ausführungsform verwendet wird, besteht aus einem ferromagnetischen Material und weisteine Durchgangsöffnung in ihrer Mitte auf, wie in Fig. 4 dargestellt. Ein zylindrischer Kern 8  , welcher auch aus einem ferromagnetischen Materialbesteht, wird in die Mitte der Durchgangsöffnung eingeführt. In dieser bevorzugten Ausführungsform wird ein Permanentmagnet 9  , magnetisiert inder Richtung, in welcher sich der Kern 8  bewegt, für den unteren Bereich des Kerns 8  bereitgestellt. Daher wird der Kern 8  selbst auch magnetisiert.Der Hohlraum wird zwischen den Innenwänden der Durchgangsöffnung der Pressform und den Außenwänden des Kerns 8  definiert. Ein radialausrichtendes Magnetfeld wird im Inneren des Hohlraums durch den Kern 8  und die Pressform 2  erzeugt.\n\n\n\n[0056] Im Folgenden wird unter Bezugnahme auf Fig. 3 beschrieben, wie die Presse dieser bevorzugten Ausführungsform betrieben wird.\n\n\n\n[0057] Zunächst wird, wie in der oben beschriebenen ersten bevorzugten Ausführungsform, eine Mischung (d.h. ein Verbund) 5  aus dem HDDRPulver und einem Bindemittel (d.h. einem Bindemittelharz) hergestellt. Die Einfüllbox 6  wird mit diesem Verbund 5  befüllt und anschließend aufeine Position gerade oberhalb der Pressform 2  der Presse 10  transportiert, wie in Fig. 3(a) dargestellt. Insbesondere sollte die Einfüllbox 6  übereinem Bereich der Pressform 2  angeordnet sein, in welcher der Hohlraum definiert wird. In dieser bevorzugten Ausführungsform sind die jeweiligenOberflächen der Pressform 2  , des unteren Pressstempels 4  und des Kerns 8  zu diesem Zeitpunkt an im Wesentlichen gleichen Positionenangeordnet, daher ist zu diesem Zeitpunkt noch kein Hohlraum definiert.\n\n\n\n[0058] Anschließend wird, wie in Fig. 3(b) dargestellt, der Kern 8  in Bezug auf die Pressform 2  und den unteren Pressstempel 4  nach oben bewegt.Anschließend wird, wie in Fig. 3(c) dargestellt, die Pressform 2  in Bezug auf den Kern 8  und den unteren Pressstempel 4  nach oben bewegt, wodurchdie obere Oberfläche der Pressform 2  mit der des Kerns 8  ausgerichtet wird. Als ein Ergebnis dieses Betriebes wird der Hohlraum definiert und mitdem Verbund 5  gefüllt.\n\n\n\n[0059] Während das Pulver auf diese Weise in den Hohlraum eingefüllt wird, werden die Pulverteilchen, die in dem Verbund 5  enthalten sind,wirksam radial ausgerichtet, unter einem schwachen Magneffeld, welches als ein statisches Magneffeld zwischen dem Kern 8  und der Pressform 2 erzeugt wird, die durch den Permanentmagneten 9  magnetisiert wurden (siehe Fig. 4).\n\n\n\n[0060] Gemäß dieser bevorzugten Ausführungsform vernetzen sich keine Pulverteilchen zwischen den Innenwänden des Hohlraumes und verstopfenden Hohlraum teilweise, während der Hohlraum mit dem Verbund 5  angefüllt wird. Aus diesem Grund kann das Pulver gleichförmiger angefüllt werdenund schneller als bei der ersten bevorzugten oben beschriebenen Ausführungsform. Daher ist das Verfahren dieser bevorzugten Ausführungsformwirksam zur Verwendung in einem Hohlraum anwendbar, der normalerweise nur schwierig vollständig mit dem Pulver zu befüllen ist. Unter anderenDingen ist dieses Verfahren insbesondere wirksam zur Herstellung eines dünnen ringförmigen anisotropen Verbundmagneten.\n\n\n\n[0061] Anschließend, nachdem die Einfüllbox 6  von oberhalb des Hohlraumes in eine zurückgezogene Position zurückgebracht wurde, wie inFig. 3(d) dargestellt, wird der obere Pressstempel (nicht dargestellt) abgesenkt, wodurch der Verbund 5  in dem Hohlraum verdichtet wird und einPresskörper erhalten wird.\n\n\n\n[0062] In dieser bevorzugten Ausführungsform wird das zugeführte Pulver unter einem Magnetfeld ausgerichtet. Daher kann auch ein schwachesMagneffeld ein ausreichend hohes Maß an Ausrichtung erzielen. Als ein Ergebnis kann die Magnetisierung des wie gepressten Presskörpers (d.h. dieremanente Magnetisierung) um wenigstens eine Größenordnung reduziert werden, im Vergleich mit der Größenordnung einer herkömmlichen.\n\n\n\n[0063] Des Weiteren wird gemäß dieser bevorzugten Ausführungsform das ausrichtende Magnetfeld durch das schwach magnetisierte magnetischeElement erzeugt, wie in der oben beschriebenen bevorzugten Ausführungsform. Daher wird das ausrichtende Magnetfeld kontinuierlich angelegt,nicht nur während des Einfüllens des Pulvers, sondern auch während des Verdichtens des Verbunds 5  zwischen dem oberen Pressstempel und demunteren Pressstempel 4  .\n\n\n\n[0064] Nachdem in der oben beschriebenen bevorzugten Ausführungsform die Einfüllbox 6  über einen Bereich transportiert wurde, in dem derHohlraum definiert wird, und bevor der Raum des Hohlraumes definiert wird, wird der Kern in die Einfüllbox eingeführt. Die vorliegende Erfindung istjedoch nicht auf solch ein Pulvereinfüllverfahren begrenzt. Alternativ kann der Hohlraum unter der Einfüllbox 6  definiert sein und mit dem Verbund 5 zur gleichen Zeit angefüllt werden, zu dem der Kern 8  und die Pressform 2  nach oben bewegt werden, in Bezug auf den oberen Pressstempel 4  wie inden Fig. 6(a) bis Fig. 6(e) dar\n\ngestellt. Als eine andere Alternative kann die Einfüllbox 6  über einen vorbestimmten Hohlraum transportiert werden, um so zu ermöglichen, dass derVerbund 5  aus der Einfüllbox 6  in den Hohlraum tropft, wie in den Fig. 7(a) bis Fig. 7(e) dargestellt.\n\n\n\n[0065] Fig. 8 zeigt eine Konfiguration für eine andere Presse, die in dieser bevorzugten Ausführungsform verwendet werden kann. In der Presse mitder in Fig. 8 dargestellten Konfiguration, ist ein radial ausgerichteter ringförmiger Permanentmagnet 9  (der magnetisiert wurde, so dass er den Südpolim Inneren und einen Nordpol an der Außenseite aufweist, in dem in Fig. 8 dargestellten Beispiel) an den Innenwänden der Durchgangsöffnung des derPressform 2  bereitgestellt ist. Ein Hohlraum wird zwischen der Innenfläche dieses Permanentmagneten 9  und der Außenfläche des Kerns definiert.Wenn der Verbund 5  , welcher in den Hohlraum eingefüllt wurde, verdichtet wird, wird eine starke Reibung von dem Verbund 5  auf die Innenfläche desPermanentmagneten 9  ausgeübt. Um daher zu verhindern, dass der Permanentmagnet beschädigt wird, wird ein dünnes Filmelement vorzugsweisezwischen der Innenfläche des Permanentmagneten 9  und dem oberen Pressstempel 4  bereitgestellt.\n\n\n\n[0066] Das dünne Filmelement kann entweder ein nichtmagnetisches Material oder ein magnetisches Material sein und entweder ein Metall oder keinMetall, wie eine Keramik.\n\n\n\n[0067] Auch wenn die in Fig. 8 dargestellte Anordnung verwendet wird, wird die radiale Ausrichtung so wirksam erzielt, wie bei der Anordnung diein Fig. 4 dargestellt ist. Wahlweise kann eine Presse mit beiden Anordnungen, welche in Fig. 4 und Fig. 8 dargestellt sind, auch verwendet werden.In diesem Fall erzeugen die zwei Arten der Permanentmagneten geeignete ausrichtende Magnetfeldverteilungen und die Radialausrichtung wird nochwirksamer erzielt.\n\n\n\n[0068] Des Weiteren ist in der in Fig. 8', '永磁体的制造方法和压制装置技术领域本发明涉及永磁体的制造方法和压制装置或压力机。\n\n现有技术\n\n\n\n[0002]上的R-Fe-B基的稀土类磁铁（R为稀土类元素包括Y的一个，Fe为铁，B是硼）是一个典型的高性能永磁体，并具有包含R2Fe14B相的结构，这是一个三级四方化合物是一个主要阶段，具有优良的磁性能。\n\n\n\n这种稀土R-Fe-B基磁体大致分为烧结磁体和粘结磁体。一种烧结磁体，是通过在压机中压制的磁性合金的R-Fe-B基的细粉末（具有几微米的平均粒度），然后烧结所得的紧凑制造。在另一方面，粘结磁体是由压实的磁性合金的R-Fe-B基的粉末的混合物（即，复合材料或混合物）（mitTeilchengrößen约100微米），并在压机的粘合剂树脂制成。\n\n\n\n[0004]烧结磁体由具有相对小的粒度，并且因此相应的Pulverteilcheneine显示磁各向异性的粉末制成。出于这个原因，定向的或特由此获得一个紧凑的印刷机，其中所述粉末粒子在磁场的方向上排列的压实粉末的定向磁场。\n\n[0005]在该粘结磁铁，所用的粉末颗粒的粒径其是单结构域通过的临界尺寸，并且通常表现出不磁各向异性，并且不能施加的磁场下取向。作相应的准备，其中粉末颗粒在一定方向上取向的各向异性粘结磁铁，必须提供一种制造磁性粉末的方法，其中相应粉末颗粒显示出磁各向异性。\n\n\n\n[0006]为了制备用于各向异性粘结磁体的稀土类合金粉末，HDDR（氢化 - 歧化 - 解吸 - 再重组）处理在时刻执行。所述“HDDR”过程指其中氢化，歧化，脱氢和再化合的顺序进行的处理。在这种HDDR处理，提供锭或在500℃到1000的温度基于的R-Fe-B基的合金的粉末在H 2气体气氛或H 2气体的混合物和惰性气体保持℃，以便使其夹带氢，接着，氢化锭或在500℃〜1000℃的温度下的粉末到解吸过程进行真空气氛产生与13 Pa以下的H 2分压或惰性气体气氛中以13 Pa以下的H 2分压。然后derdesorbierte锭或粉末被冷却，由此形成磁性合金粉末被获得。\n\n通过这种HDDR方法制备的R-Fe-B基合金粉末显示出大的矫顽力并具有磁各向异性。合金粉末具有这样的性质，因为金属结构基本上是具有0.1μm至1μm的非常小尺寸的晶体的聚集体。更具体地，高矫顽力被实现，因为非常小的晶体的晶粒尺寸，通过HDDR处理得到的是，接近tetrogonalenVerbindung上的R2Fe14B碱的单畴的临界尺寸。四方化合物的R2Fe14B碱例如非常小的晶体的聚集在本文中称为“再结晶组织”指一种用于制造具有再结晶织构durchdas HDDR处理的合金粉末的R-Fe-B基的过程在用于异议号日本公报中公开6-82575和7-68561。\n\n\n\n然而，[0008]制备，磁性粉末的各向异性粘结磁体（其将在下文中被称为一个“HDDR粉末”）是由HDDR处理制备，会出现下列问题。\n\n通过在对准磁场下压制HDDR粉末和粘合剂树脂的混合物（即复合材料）而制成的压块通过对准磁场强烈磁化。然而，如果压块仍然被磁化，则磁粉可能被吸引到压块的表面，或者压块可能彼此吸引或彼此接触，例如，由此它们可能被切削。在这种情况下，在随后的制造工艺步骤中处理这种压块变得非常困难。出于这个原因，Presskör\n\n在从报刊上卸下之前要充分消磁。因此，在从压力机中弹出磁化压块之前，必须通过施加退磁场来对压块进行“退磁处理”，所述退磁场的方向与对准的磁场的方向相反或在压块上的交替衰减场。然而，在这种情况下，压制过程的循环时间是不进行退磁过程的情况的两倍或更长（即，各向同性粘结磁体的循环时间）以这种方式延长循环时间，减少了大规模生产并且无意中增加了磁体的制造成本。\n\n另一方面，在烧结磁体中，由于磁粉末材料从一开始就具有低的矫顽力，即使压块没有充分去磁，该压块仍然只是轻微地磁化。此外，在烧结工艺步骤中，磁粉暴露于高于其居里温度的高温。因此，磁粉在经受磁化处理步骤之前被完全磁化。相反，如果压坯（如在各向异性粘结磁体中）在从压机排出时仍保持磁化，则磁化保持到磁化处理步骤。并且如果粘结磁体在磁化工艺步骤中保持磁化，则磁体由于磁体的磁滞特性而难以磁化。\n\nUS 2001/0018029 A1公开了一种磁粉供给方法，用于将磁粉供给压力机的空腔中，磁粉被压实形成磁铁。 EP 1 447 827 A1公开了一种永磁体。\n\n\n\n[0012]为了克服上述问题，它是本发明的一个主要目的是提供一种方法和用于制造易磁化永久磁铁的压（即，除了其他项目anisotropenVerbundmagneten）以降低的成本通过避免问题，即由压块的不希望的剩余磁化引起的。\n\n\n\n该目的是根据权利要求1的方法实现的。优选的实施方案在从属权利要求2至11中给出。本发明还提供如权利要求12和13所限定的压力机。\n\n发明内容\n\n根据本发明的制造永磁体的方法是通过将磁粉插入压力机的腔体中并压制磁粉来制造永磁体的方法。该方法包括以下步骤：产生如下的磁场：权利要求1，定义为包括空腔的空间中的静磁场，并将磁粉输送到空腔内，同时磁粉与磁场平行排列;并且压缩腔内的磁粉，从而获得压实的磁粉。\n\n在优选实施例中，使用永久磁化的磁性元件产生弱磁场。\n\n\n\n在另一个实施例中，在压缩空腔内的磁粉的步骤期间也施加弱磁场。\n\n\n\n在另一个优选实施例中，设定弱磁场使得刚刚被压力机压制的压块具有0.005特斯拉或更小的表面通量密度。\n\n\n\n根据本发明，弱磁场限定了在腔内具有8kA / m至120kA / m范围内的强度的磁场。\n\n\n\n弱磁场的场强优选设定为100ka / m以下的上限，更优选为80kA / m以下。\n\n\n\n在另一个优选实施例中，在磁粉已经在腔内压实之后，压实的磁粉从腔中排出而不经过去磁处理。\n\n\n\n在另一个优选实施例中，磁性元件是形成压力机模具的元件之一。\n\n在另一个优选实施例中，磁性元件的至少一部分是永磁体。\n\n\n\n在另一个优选的实施方案中，至少一部分磁粉是HDDR粉末。\n\n\n\n在另一个优选实施例中，压力机包括：具有通道的模具;在内部并相对于通道往复运动的芯部;如权利要求12所述的下冲头，其在通孔的内表面和芯的外表面之间以及相对于模具之间往复运动。将磁粉输送到腔体内部的步骤包括以下步骤：在用下冲头封闭通孔之后，通过模具的通孔定位包括磁粉的填充盒;相对于模具向上移动核心;并使模具相对于芯向上移动，从而在填充盒下方限定腔。\n\n根据本发明的压力机包括：具有通孔的模具;上冲头和下冲头，适于在通孔内和相对于模具往复运动;和粉末填料，用于将磁粉装入模具通孔内限定的空腔中。压力机还包括为了对准目的而被磁化的元件。这些元件用于将如权利要求12所限定的弱磁场作为静磁场施加到填充到空腔中的磁粉中。\n\n在优选实施例中，为了设备目的而被磁化的至少一个元件是永磁体。\n\n附图说明\n\n\n\n图1（a）至1（d）是显示如何在各个制造工艺步骤中操作根据本发明优选实施例的压力机的主要元件的横截面图。\n\n\n\n图2示出了一种布置，其中永磁体用作产生弱对准磁场的磁性元件。\n\n\n\n图3（a）至3（d）是表示在各个制造工艺步骤中如何操作根据本发明第二特定优选实施例的压力机的主要元件的横截面图。\n\n\n\n图4示出了用于本发明第二优选实施例的压力机的结构。\n\n\n\n图5显示了通过本发明获得的薄环形各向异性粘结磁体。\n\n\n\n图6（a）至6（e）是表示在各个制造工艺步骤中如何操作根据本发明另一个特定优选实施例的压力机的主要元件的横截面图。\n\n[0033]图7（a）至图7（e）是示出了如何按主要成员在相应制造工序根据本发明的又一个具体的优选实施例进行操作的剖视图。\n\n\n\n图8示出了用于本发明第二优选实施例的另一台压力机的结构。\n\n\n\n图9示出了用于本发明第二优选实施例的又一压力机的结构。\n\n\n\n图10是表示在腔内产生的弱磁场的场强与所得各向异性粘结磁体的最大能积（BH）max之间的关系的曲线图。\n\n\n\n图11是表示在腔内产生的弱磁场的场强与所得各向异性粘结磁铁的每单位重量的通量之间的关系的曲线图。\n\n具体实施方式\n\n\n\n本发明人已经发现，当将如权利要求1所限定的弱磁场作为静磁场施加到引入压力机腔体的磁粉中时，永久磁场\n\n磁体可以具有足够高的取向度，而不适用于这必须是，如在传统方法中的强定向磁场来实现。本发明人以这种方式得到了本发明的基本思想。\n\n\n\n[0039]根据本发明将被应用为对准目的的磁场的场强度是如此弱，以至于如压块的剩磁可以充分降低。因此，不需要对其执行额外的退磁处理。\n\n\n\n[0040]应当注意，已经在日本公开出版物号，对于通过施加取向磁场到其被输送到一个腔中的磁性粉末的磁性粉末的有效取向的方法（即，丢弃）。2001-93712和2001-226701被描述。在本发明中，füreinen永磁体的压实以比任何这些出版物中公开的显著小磁场下进行，从而dieOberflächenflussdichte，从成形体的剩磁产生的被减小到0.005特斯拉或更小，而不在于a消磁来执行需要。与此相反，根据本发明的常规方法调心，无磁场发生器必须用大尺寸中使用，并且在压制过程的周期时间可以显著缩短werden.AUSFÜHRUNGSFORM1\n\n在下文中，将参考附图描述本发明的第一特定优选实施例。在该优选实施例中，生产各向异性粘结磁体。\n\n\n\n[0042]图1（a）至图1（d）示出Hauptverfahrungsschritte（即，从小鼠下填充粉末引导磁场以压实粉末的工序的步骤）根据本发明的磁铁的制造方法进行说明。冲压机10，其在图1所示的包括模具2具有通孔1，上部冲头3和下冲头4，其是undherbewegen可以在贯通孔的内部1和向前相对于通道开口和Pulvereinfüller （例如，填充盒）以将磁粉（例如，复合材料）5填充在腔体中，该腔体限定在模具2的通孔1内。\n\n在该优选实施例中，用作管芯2的磁性元件（由铁磁材料制成）的至少一部分被磁化。因此，可以在插入腔体的同时将弱磁场作为静磁场施加到磁粉5。定义磁化强度，使得在腔内产生的弱磁场的场强落在8kA / m至120kA / m的范围内（在腔的中心测量）。磁化的磁性元件恒定地形成弱磁场，作为腔内的静磁场（如图1中的参考字符“M”所示），从而适当地对准要提供的连接。\n\n用于产生作为静磁场的弱磁场的磁性元件优选地设置在腔体附近。然而，可以根据期望的磁场分布适当地选择特定的布置和配置。为普通压力机提供的模具包括由铁磁材料制成的元件（或区域）。结果，当元件（或区域）在强磁场下被磁化时，以必要的程度实现磁化。在将模具引入压力机之前或在模具已经插入压力机之后，磁性元件可以被磁化。传统的各向异性复合磁体压力机包括用于产生强对准磁场的线圈，该线圈随后施加到供应的粉末上。因此，模具的一部分也可以被该线圈产生的强磁场磁化。\n\n应当注意，代替磁化模具2的一部分，永磁体可以嵌入模具2中或者可以设置在模具2周围。图2（a）和图2（b）示出了一对永磁体（即稀土烧结磁体）7布置在模具2的右侧和左侧的示例。在该示例中，腔中的对准磁场由两个永磁体7产生。在通过适当地改变所使用的永磁体的磁化的数量或程度来修改布置时通过布置永磁体7来产生对准磁场时，可以形成新的对准磁场分布，这是通过任何传统方法都不能获得的。\n\n下面，将描述用图1所示装置制造各向异性粘合磁铁的方法。\n\n\n\n首先，由上述HDDR粉末和粘合剂（即粘合剂树脂）制备混合物（即复合物）5。如图1（a）和1（b）所示，填充盒6填充有该复合物5，然后被输送到压力机模具2的空腔正上方的位置。随后，复合物5落入空腔中并填充空腔。当以这种方式用空腔填充空腔时，包含在复合物5中的粉末颗粒在弱磁场下作为静磁场有效地对准。据信这是因为输送到腔体中的相应粉末颗粒可以在落入腔体中时相对容易地旋转。\n\n本发明人通过实验已经发现，引入空腔中的复合物5应该每隔一点一点地倒入空腔中，而不是一次大量地倒入空腔中。其原因假定如下。特别是，当以相对大的比例供应复合材料5时，各个粉末颗粒的自由运动（例如，其他情况下的旋转）受到干扰并且对准程度降低。另一方面，如果以少量供应复合物5，则各个粉末颗粒可以相对自由地旋转并且还可以在弱磁场下容易地对准。\n\n[0049]如果从用于施加定向磁场的常规线圈的强磁场施加将在复合物5，引入到空腔上，粉末颗粒会在所述腔的内壁，从而堵塞腔部分之间的定向磁场的方向相结合。在这种情况下，带有粉末的空腔不能均匀地填充。另一方面，当在该优选实施方案中进行对复合物5施加相对弱的磁场时，粉末颗粒几乎不会磁性结合在一起。\n\n\n\n[0050]然后，如示于图1（c）是表示供料箱已处于缩回位置带到6后背部从腔上方，上压模3如图1（d）降低图示的，其中，所述复合在腔体中压缩图5所示的压力体，得到压力体7。\n\n\n\n在该优选实施方案中，供应的粉末在磁场下排列。因此，即使是具有8kA / m至120kA / m的非常弱的磁场也可以实现足够高的对准度。与此相反，当施加的Magnetfeldzu强（即，超过800千安/米象在传统对准磁场）时，粉末颗粒是磁性交联彼此等无意中与所述粉末的进给平稳干扰。\n\n[0052]根据该优选实施例中，磁化摇篮压块7（即，remanenteMagnetisierung）可以减小大小的至少一个数量级，与传统的方法相比较。因此，强磁场下的各种措施是必要的（例如，在腔创建粉末上面的非常小的空间，以更容易地对准粉末，在这样的状态，并且在装入的粉末对准是的常规工艺步骤粉末对准立即压制和压实粉末以获得不再需要的紧凑型。另外，压块7不需要进行去磁。其结果是，根据该优选实施方案中，在压制过程的周期时间可以缩短到一半或小于常规anisotropenVerbundmagneten的持续时间（即，大约各向同性磁铁的一半）。\n\n\n\n此外，根据该优选实施例，对准磁场由弱磁化磁性元件产生。因此，定向磁场连续地不只是粉末的填充期间施加，而且上下压之间的复合物5的压实过程中管芯3和图4。结果，可以最小化在压实过程中容易发生的扰动取向。\n\n实施例2\n\n\n\n在下文中，将参照图3至图7描述本发明的第二特定优选实施例。在该优选实施例中，产生径向取向的环形各向异性粘结磁体。特别地，基本上径向对齐的薄环是för\n\n使用图4（a）和4（b）所示的模具，如图5所示的米格各向异性粘结磁铁11。\n\n\n\n在该优选实施例中使用的模具2由铁磁材料制成，并且在其中心具有通孔，如图4所示。圆柱形芯8也由铁磁材料制成，插入通孔的中心。在该优选实施例中，在芯8的下部设置有沿芯8移动方向磁化的永磁体9。因此，芯8本身也被磁化。空腔限定在模具的通孔的内壁和芯8的外壁之间。通过芯8和模具2在腔体内部产生径向对准磁场。\n\n在下文中，将参考图3描述如何操作该优选实施例的压力机。\n\n\n\n首先，与上述第一优选实施例一样，混合物（即复合物）5由HDDR粉末和粘合剂（即粘合剂树脂）制成。填充盒6填充有该复合物5，然后输送到压力机10的模具2正上方的位置，如图3（a）所示。特别地，填充箱6应布置在模具2的区域上方，在该区域中限定空腔。在该优选实施例中，模具2，下模4和芯8的相应表面此时布置在基本相等的位置，因此此时没有限定空腔。\n\n\n\n随后，如图3（b）所示，芯8相对于模具2和下模4向上移动。然后，如图3（c）所示，形成模具2。相对于芯8和下冲头4，模具2的上表面与芯8的上表面对齐。作为该操作的结果，空腔被限定并填充有复合物5。\n\n当粉末以这种方式填充到空腔中时，包含在复合物5中的粉末颗粒在弱磁场下有效地径向对准，这在芯8和模具2之间产生静磁场。由永久磁铁9磁化（参见图4）。\n\n\n\n根据该优选实施例，在腔体填充有复合物5的同时，腔体的内壁和堵塞腔体之间没有粉末颗粒部分交联。因此，与上述第一优选实施例相比，可以更均匀和更快地填充粉末。因此，该优选实施例的方法可有效地应用于通常难以完全填充粉末的空腔中。其中，该方法对于制造薄环形各向异性粘结磁体特别有效。\n\n\n\n随后，在填充箱6从空腔上方返回到缩回位置之后，如图3和图4所示。如图3（d）所示，上压头（未示出）下降，从而压缩腔体中的复合物5并获得压块。\n\n在该优选实施方案中，供应的粉末在磁场下排列。因此，即使弱的品红色场也可以实现足够高的对准度。其结果是，可以由至少一个相对于传统的一个的幅度量级可以减小作为压块（即dieremanente磁化）的磁化。\n\n\n\n此外，根据该优选实施例，如上述优选实施例中那样，由弱磁化磁性元件产生对准磁场。因此，定向磁场连续地不只是粉末的填充过程中，也是上挤压模具冲压模和demunteren之间的复合物5的压实过程中施加。4\n\n\n\n[0064]供料箱已在上述优选实施例后，运送过6在空腔和空腔的面积被定义之前所限定的范围内，所述芯被插入到供料箱。然而，本发明不限于这种粉末填充方法。可替代地，空腔可以供料箱6下被定义并且在其中芯8和模具2向上移动的同时充满了化合物5，相对于所述上压如图模4 6（a）中到图6（e）\n\n提供。作为另一种替代方案中，供料箱可以被运输6在预定的腔体，以便使该从derVerbund喂入箱6 5滴落到腔如图7（a）至图7（e）所示。\n\n\n\n图8示出了可用于该优选实施例的另一压力机的结构。在图压mitder图8中所示的配置，内壁上的径向对齐的环形永久磁铁9（其已被磁化成具有内侧的Südpolim和外侧的北极，在图所示的例子。8）提供模具2的通孔。甲腔该永久磁铁9的内表面和复合definiert.Wenn 5，其被填充到空腔中的芯体的外表面之间被压缩时，复合材料的内表面5 desPermanentmagneten 9很强的摩擦施加。为了防止，因此，从永久磁铁受到损坏，薄膜构件是优选的永久磁铁9和上压的内表面之间提供了4死亡。\n\n薄膜元件可以是非磁性材料或磁性材料，可以是金属或不是金属，例如陶瓷。\n\n\n\n即使使用图8所示的布置，也可以有效地实现径向对准，如图4所示的布置。可选地，具有两个组件的压其在图4和图8所示，也werden.In用于这种情况下，产生两种类型的永久磁铁的适当定向磁场分布和径向对准甚至更有效地实现。\n\n\n\n此外，在图8所示的布置中，径向定向的环形永磁体9设置在模具2的通孔的内壁上。可替代地，一个径向对齐的环形永久磁铁也可以被提供给derAußenoberfläche芯8和一腔可以在环形永磁体和模具的通孔的内壁的外表面之间限定。2作为另一种替代方案中，这些径向对齐的环形永磁体也可以是在两个，sein.Auch设置在模具2的通孔和芯8，从而期望的径向实现对准的外表面的内壁。\n\n[0069]在上面描述的优选实施例中，径向对齐的环形永久磁铁被磁化，使得单个磁极性显示器（即北极或南极）的内表面或外表面。或者，设置在立方体形通孔的内壁上的环形永磁体可以具有沿内表面交替布置的多对彼此相对的磁极。当采用这样的结构，所得到的环状的永久磁铁可以被对准，使得它具有外表面上的多极各向异性（参见日本特开专利公开号1-27208，例如）。以相同的方式，待设置在芯的外表面上的环形永磁体可具有多对相对的磁极沿外表面交替排列。当采用这种结构时，所得到的永久环形磁铁可以对齐，以在内表面上呈现出多极各向异性。应当注意，这种具有多极各向异性的磁体不需要通过采用环形永磁体作为如上所述的对准磁体来对准。或者，可以使用任何其他已知的布置。例如，多个弧形磁铁可以布置成环形，使得多对相对的磁极彼此交替。此外，可以在立方体形通孔的内壁上限定用于嵌入线圈以产生弱对准磁场的凹槽。\n\n在上述各种优选实施例的每一个中（包括垂直取向，径向取向和多极取向），水平施加对准磁场，即，对准磁场。垂直于按压方向（单轴压缩方向）。因此，填充空腔的粉末颗粒水平排列。由于磁相互作用，粉末颗粒水平链接在一起。设置在带电粉末表面上的粉末颗粒也水平连接。结果，粉末可以容易地完全设置在空腔中而不会溢出空腔。\n\n\n\n当平行于按压方向施加对准磁场时，永磁体9可以设置在下冲头4下方，如图9所示。在这样的布置中，un上的磁化\n\n强冲头4比上冲头3强。因此，复合物5可以平滑地插入空腔中。\n\n\n\n是[0072]图9示出一种状态，其中由下压的表面限定在腔中的复合模4（设置在welchemder永久磁铁9）和所述模具2的贯通孔的内壁，被压缩通过降低上冲头3在将复合材料引入空腔并沿壳体M指示的方向取向之后。\n\n在图9所示的布置中，永磁体9的相对位置随着上冲头4相对于模具2上下移动而改变。虽然复合材料被供给到下压模4个移动可言，因此，无论是方向也不是定向磁场的强度，存在于由下压的表面限定的空腔模4个模2更改的通孔的内壁是。如本文所用，“静磁场”是指磁场，其方向和场强在参考腔的位置限定的坐标系中基本保持恒定，同时供应磁粉。磁性元件，由永磁体磁化，由于机械原因\n\n\n\n压机的操作被移动时，在腔体中产生的取向磁场，而磁性粉末被供给，依然是“静磁场”只要取向磁场的方向和磁场强度不会随的期间改变，但是基本上恒定，\n\n应该注意的是，压力机腔的中心轴线可以限定相对于垂直方向的倾斜角度。此外，对准磁场的方向还可以限定相对于水平方向的倾斜角。这些布置根据应形成永磁体的形式适当地确定。\n\n在上述各种优选实施例的每一个中，使用已沿预定方向磁化的永磁体。然而，当用线圈而不是永磁体执行磁化时，也可以获得类似的效果。可替代地，由磁化元件产生的不仅是一个弱取向磁场由永久磁铁形成，但也可以产生的磁场由线圈施加。即使这样einzusätzliches磁场（其将在下文中被称为“辅助磁场”）被使用，ausrichtendeMagnetfeld在空腔8 300kA / m的场强，以120千安/米，使得所得到的成形体这样的低具有remanenteMagnetisierung 0.005 T或更小。即，在腔中的定向磁场强度优选根据所希望的形状和尺寸紧凑，磁性粉末的磁特性，在优化了磁性粉末馈送过程步骤中的取向方向和derPulverzufuhrrate。为了实现完全对准，对准磁场优选地具有高场强。然而，如从下列具体实例的描述是明显存在，如果定向磁场强度达到预定的磁场强度，没有必要进一步增加磁场强度由于效果饱和而在这种情况下，仅增加了紧凑的剩磁。本发明人已经发现，通过使磁场应该具有至少8 300kA / m的场强以达到gewünschteAusrichtung实验所证实。其上限被限定为120千安/米鉴于剩余磁化的。对准磁场的上限更优选为100kA/ m，甚至更优选80kA / m。应注意，测量磁场不必是静磁场，而可以是振荡磁场，例如交变磁场或脉冲磁场。\n\n例子（例1）\n\n\n\n下面将描述本发明的具体实例。\n\n\n\n[0077]首先，在第一特定实例中，稀土类的Nd-Fe-B的HDDR粉末基于组合物，包含27,5Gew的Nd .-％，1.07重量％的B，14.7重量％的Co ，0.2％（重量）的Cu，0.3％（重量）的Ga，0.15％（重量）的Zr和Fe作为余量。特别是，稀土类合金，首先用热这样的组合物处理过的在1130℃下15小时在Ar气氛中，处理并随后粉碎和由贮氢过程过筛。随后，对所得粉末进行HDDR处理，以获得磁各向异性HDDR粉末。平均粒径\n\n粉末（通过激光衍射分析测量）为约120μm。\n\n\n\n[0078]粉末HDDR用粘合剂（粘合剂树脂）的基于双酚A为基础，将其加热到60度使用双轴捏合机中，由此制备化合物HDDR上的环氧树脂混合。粘合剂占总混合物重量的约2.5％。\n\n将该HDDR复合材料压实并用压机压实，例如图1和2中所示的压机。在这种情况下，通过改变磁体的磁化强度来调节设置在模具2的右侧和左侧的永磁体的基本磁性。以这种方式，腔中的磁场强度被控制到期望值。压力机的模腔的开口（在顶部）（即，腔腔的垂直于加压方向的横截面）是矩形的（例如，5mm×20mm），并且腔具有40mm的腔。\n\n在腔中填充约10g（克）的复合物。的压制体，其上已经形成在这样的空腔，是einrechteckiger测量长方体和具有5mm（长度）20毫米（宽度）和17毫米（高）的尺寸。\n\n\n\n[0081]图10示出在空腔中产生和所得的各向异性粘结磁体的最大磁能积（如在中心desHohlraumes测量）弱磁场的场强之间的关系。图10示出的本发明中，其特征在于，该粉末相互不同的条件下，进料的两个特定实施例的值，并且这些值einesanisotropen粘结磁体是通过在其中desVerdichtungsverfahrens过程中，施加12千奥斯特的强磁场的常规方法制备（作为对比实施例）。\n\n\n\n应注意，磁场强度显示为Oe（奥斯特）曲线的横坐标。通过将该值乘以103 /（4π）获得根据SI系统的单位的磁场强度。由于103 /（4π）约为80，因此根据单元SI系统，100Oe约为8kA / m。\n\n粉末掺入工艺步骤期间的粉末进料速率在第一具体实施例中保持较低，但在第二具体实施例中被定义为尽可能高。从图10可以清楚的是，在第一具体例（由实线表示）当在腔中的磁场强度为100奥斯特以上，最大磁能积，welchesso是高达90％或比较例中获得更，然而，如果在第二个具体例子（由虚线示出），在腔中的磁场强度为400奥斯特以上，最大磁能积，welchesso为高，以与获得的比较例的90％或更多。然而，在第二个例子中，当磁场强度低时，最大能量积很小。这些结果表明粉末进料步骤中的粉末进料速率优选较低。\n\n[0084]此外，在其中粉末进料速率是高的第二具体例，是由定向磁场的场强来实现增加（（400奥斯特=约32千安/米或更大）。然而，当ausrichtendeMagnetfeldstärke过于实用的磁特性增加时，所得到的成形体的剩余磁感应增加，以至于Problemeauftraten是类似于那些在现有技术的问题看出为了降低剩余磁化的水平beiwelchem不会发生这样的问题（即0.005 T或更小）时，定向磁场强度优选不大于1500奥斯特（即120千安/米），如果剩余磁化应当被进一步降低，再有在定向磁场强度优选bei1.260奥斯特（即100千安/米）或更小，并且更优选在1000Oe（例如80kA / m）或更低，更优选400Oe或更低少。\n\n（例2）\n\n\n\n如图3和4所示，用压力机制造径向取向的环形各向异性粘合磁铁。还使用与上述第一具体实施例中使用的相同的化合物。该压块的外径为25毫米，内径为23毫米，高度为5毫米。\n\n\n\n[0086]图11示出如通过测量已经在（如在腔的中心测量的）模腔中产生弱磁场的强度之间和通量（（每单位所得到的各向异性粘结磁体的重量计）的关系\n\n\n\n磁化处理步骤）。用常规强磁场（即，场强为1,200kA / m的脉冲磁场）致密化的各向异性粘结磁体的流动也用作比较例。\n\n如图11所示。\n\n\n\n从图11中可以看出，磁通量随着磁场强度的增加而增加，但在场强为约400Oe至约500Oe时饱和。为了最小化剩余磁化和得到实用的磁通，所述磁构件优选磁化，使得在约400奥斯特腔中的磁场强度至约600奥斯特为（大约32千安/ m至约48千安/米）。\n\n当腔中的对准磁场强度高于1,000Oe（即80kA / m）时，压制的压块（未经过去磁处理）具有约0.0010特斯拉的表面通量密度（或剩磁）。高达约0.0013特斯拉（即约10高斯至约13高斯）。另一方面，如果腔中的对准磁场强度约为500Oe（即40kA / m），则剩磁约为0.0005特斯拉（即5高斯）。\n\n\n\n在该具体实例中，粉末通过图1所示的方法供应。结果，没有粉末颗粒彼此磁交联。即使产生具有相对高强度的对准磁场强度，也可以快速填充粉末。\n\n工业实用性\n\n根据本发明，弱的对准磁场作为静磁场施加到待供应的粉末上。因此，待引入腔中的粉末可以在对准磁场的方向上对准。由于对准磁场具有低场强，因此实现了足够程度的磁对准，因此可以显着减小压制成形体中残留的磁化。因此，不需要退磁过程。因此，虽然可以避免由剩余磁化引起的各种问题，但是可以缩短压制过程的时间周期，并且可以以低成本制造具有优异性能的永磁体。\n\n此外，根据本发明，由于不再需要用于产生强对准磁场的传统线圈，所以可以减小压力。另外，可以节省线圈浪费的用于产生对准磁场的粉末，并且可以降低压制方法的成本。');
INSERT INTO `os_patent_instruction_text` VALUES (12973, 22802, 'TECHNICAL FIELD\n\n[0001]The present invention relates to a method for producing a permanent magnet and also relates to a press machine.\n\nBACKGROUND ART\n\n[0002]An R—Fe—B based rare-earth magnet (where R is one of the rare-earth elements including Y, Fe is iron, and B is boron) is a typical high-performance permanent magnet, has a structure including, as a main phase, an R2Fe14B phase, which is a tertiary tetragonal compound, and exhibits excellent magnet performance.\n\n[0003]Such R—Fe—B based rare-earth magnets are roughly classifiable into sintered magnets and bonded magnets. A sintered magnet is produced by compacting a fine powder of an R—Fe—B based magnet alloy (with a mean particle size of several μm) with a press machine and then sintering the resultant compact. On the other hand, a bonded magnet is produced by compacting a mixture (i.e., a compound) of a powder of an R—Fe—B based magnet alloy (with particle sizes of about 100 μm) and a binder resin within a press machine.\n\n[0004]The sintered magnet is made of a powder with relatively small particle sizes, and therefore, the respective powder particles thereof exhibit magnetic anisotropy. For that reason, an aligning magnetic field is applied to the powder being compacted by the press machine, thereby obtaining a compact in which the powder particles are aligned with the direction of the magnetic field.\n\n[0005]In the bonded magnet on the other hand, the powder particles used have particle sizes exceeding the single domain critical size, and normally exhibit no magnetic anisotropy and cannot be aligned under a magnetic field applied. Accordingly, to produce an anisotropic bonded magnet in which the powder particles are aligned with particular directions, a technique of making a magnetic powder, of which the respective powder particles exhibit the magnetic anisotropy, needs to be established.\n\n[0006]To make a rare-earth alloy powder for an anisotropic bonded magnet, an HDDR (hydrogenation-disproportionation-desorption-recombination) process is currently carried out. The “HDDR” process means a process in which the hydrogenation, disproportionation, desorption and recombination are carried out in this order. In this HDDR process, an ingot or a powder of an R—Fe—B based alloy is maintained at a temperature of 500° C. to 1,000° C. within an H2 gas atmosphere or a mixture of an H2 gas and an inert gas so as to occlude hydrogen. Thereafter, the hydrogenated ingot or powder is subjected to a desorption process at a temperature of 500° C. to 1,000° C. until a vacuum atmosphere with an H2 partial pressure of 13 Pa or less or an inert atmosphere with an H2 partial pressure of 13 Pa or less is created. Then, the desorbed ingot or powder is cooled, thereby obtaining an alloy magnet powder.\n\n[0007]An R—Fe—B based alloy powder, produced by such an HDDR process, exhibits huge coercivity and has magnetic anisotropy. The alloy powder has such properties because the metal structure thereof substantially becomes an aggregation of crystals with very small sizes of 0.1 μm to 1 μm. More specifically, the high coercivity is achieved because the grain sizes of the very small crystals, obtained by the HDDR process, are close to the single domain critical size of a tetragonal R2Fe14B based compound. The aggregation of those very small crystals of the tetragonal R2Fe14B based compound will be referred to herein as a “recrystallized texture”. Methods of making an R-Fe-B based alloy powder having the recrystallized texture by the HDDR process are disclosed in Japanese Patent Gazettes for Opposition Nos. 6-82575 and 7-68561, for example.\n\n[0008]However, if an anisotropic bonded magnet is produced with a magnetic powder prepared by the HDDR process (which will be referred to herein as an “HDDR powder”), then the following problems will arise.\n\n[0009]A compact, obtained by pressing a mixture (i.e., a compound) of the HDDR powder and a binder resin under an aligning magnetic field, has been strongly magnetized by the aligning magnetic field. If the compact remains magnetized, however, a magnet powder may be attracted toward the surface of the compact or the compacts may attract and contact with each other to be chipped, for example. In that case, it will be very troublesome to handle such compacts in subsequent manufacturing process steps. For that reason, before unloaded from the press machine, the compact needs to be demagnetized sufficiently. Accordingly, before the magnetized compact is unloaded from the press machine, a “degaussing process” of applying a degaussing field such as a demagnetizing field, of which the direction is opposite to that of the aligning magnetic field, or an alternating attenuating field to the compact needs to be carried out. However, such a degaussing process normally takes as long a time as several tens of seconds. Accordingly, in that case, the cycle time of the pressing process will be twice or more as long as a situation where no degaussing process is carried out (i.e., the cycle time of an isotropic bonded magnet). When the cycle time is extended in this manner, the mass productivity will decrease and the manufacturing cost of the magnet will increase unintentionally.\n\n[0010]As for a sintered magnet on the other hand, even if the compact thereof is not degaussed sufficiently, the compact remains magnetized just slightly, because its material magnet powder has low coercivity from the beginning. Also, in the sintering process step, the magnet powder is exposed to an elevated temperature that is higher than the Curie temperature thereof. Thus, the magnet powder will be completely degaussed before subjected to a magnetizing process step. In contrast, as for an anisotropic bonded magnet, if the compact thereof remains magnetized when unloaded from the press machine, then the magnetization will remain there until the magnetizing process step. And if the bonded magnet remains magnetized in the magnetizing process step, the magnet is very hard to magnetize due to the hysteresis characteristic of the magnet.\n\n[0011]In order to overcome the problems described above, a main object of the present invention is to provide a method and a press machine for producing an easily magnetizable permanent magnet (e.g., an anisotropic bonded magnet among other things) at a reduced cost by avoiding the problems caused by the unwanted remanent magnetization of the compact.\n\nDISCLOSURE OF INVENTION\n\n[0012]A permanent magnet producing method according to the present invention is a method for producing a permanent magnet by feeding a magnetic powder into a cavity of a press machine and compacting the magnetic powder. The method includes the steps of: creating a weak magnetic field as a static magnetic field in a space including the cavity and transporting the magnetic powder toward the inside of the cavity while aligning the magnetic powder parallel to the direction of the weak magnetic field; and compacting the magnetic powder inside of the cavity, thereby obtained a compact.\n\n[0013]In a preferred embodiment, the weak magnetic field is created by using a magnetic member that is magnetized steadily.\n\n[0014]In another preferred embodiment, the weak magnetic field is also applied in the step of compacting the magnetic powder inside of the cavity.\n\n[0015]In another preferred embodiment, the weak magnetic field is adjusted such that the compact, which has just been pressed by the press machine, has a surface flux density of 0.005 tesla or less.\n\n[0016]In another preferred embodiment, the strength of the weak magnetic field is adjusted to the range of 8 kA/m to 120 kA/m inside of the cavity.\n\n[0017]The strength of the weak magnetic field is preferably adjusted so as to have an upper limit of 100 kA/m or less, more preferably 80 kA/m or less.\n\n[0018]In another preferred embodiment, after the magnetic powder has been compacted inside of the cavity, the compact is unloaded from the cavity without being subjected to any degaussing process.\n\n[0019]In another preferred embodiment, the magnetic member is one of members that make up a die of the press machine.\n\n[0020]In another preferred embodiment, at least a portion of the magnetic member is a permanent magnet.\n\n[0021]In another preferred embodiment, at least a portion of the magnetic powder is an HDDR powder.\n\n[0022]In another preferred embodiment, the press machine includes: a die having a through hole; a core, which reciprocates inside of, and with respect to, the through hole; and a lower punch, which reciprocates between the inner surface of the through hole and the outer surface of the core and with respect to the die. The step of transporting the magnetic powder toward the inside of the cavity includes the steps of: positioning a feeder box, including the magnetic powder, over the through hole of the die after the through hole has been closed up with the lower punch; moving the core upward with respect to the die; and moving the die upward with respect to the core, thereby defining the cavity under the feeder box.\n\n[0023]A press machine according to the present invention includes: a die having a through hole; an upper punch and a lower punch, which are able to reciprocate inside of the through hole and with respect to the die; and a powder feeder for feeding a magnetic powder into a cavity that is defined inside of the through hole of the die. The press machine further includes members that have been magnetized for alignment purposes. The members are used to apply a weak magnetic field as a static magnetic field to the magnetic powder being transported into the cavity.\n\n[0024]In a preferred embodiment, at least one of the members that have been magnetized for alignment purposes is a permanent magnet.\n\n[0025]A permanent magnet according to the present invention is produced by a compaction process. The magnet is obtained by aligning and compacting a magnetic powder inside of a press machine under a weak magnetic field as a static magnetic field. The remanent magnetization of the magnet is represented by a surface flux density of 0.005 tesla or less when unloaded from the press machine without being subjected to any degaussing process.\n\nBRIEF DESCRIPTION OF DRAWINGS\n\n[0026]FIGS. 1(a) through 1(d) are cross-sectional views showing how the main members of a press machine according to a preferred embodiment of the present invention operate in respective manufacturing process steps.\n\n[0027]FIG. 2 shows an arrangement in which a permanent magnet is used as a magnetic member for creating a weak aligning magnetic field.\n\n[0028]FIGS. 3(a) through 3(d) are cross-sectional views showing how the main members of a press machine according to a second specific preferred embodiment of the present invention operate in respective manufacturing process steps.\n\n[0029]FIG. 4 illustrates a configuration for the press machine for use in the second preferred embodiment of the present invention.\n\n[0030]FIG. 5 illustrates a thin-ring-shaped anisotropic bonded magnet obtained by the present invention.\n\n[0031]FIGS. 6(a) through 6(e) are cross-sectional views showing how the main members of a press machine according to another specific preferred embodiment of the present invention operate in respective manufacturing process steps.\n\n[0032]FIGS. 7(a) through 7(e) are cross-sectional views showing how the main members of a press machine according to yet another specific preferred embodiment of the present invention operate in respective manufacturing process steps.\n\n[0033]FIG. 8 illustrates a configuration for another press machine for use in the second preferred embodiment of the present invention.\n\n[0034]FIG. 9 illustrates a configuration for still another press machine for use in the second preferred embodiment of the present invention.\n\n[0035]FIG. 10 is a graph showing relationships between the strength of a weak magnetic field that has been created inside of a cavity and the maximum energy product (BH)max of the resultant anisotropic bonded magnet.\n\n[0036]FIG. 11 is a graph showing a relationship between the strength of a weak magnetic field that has been created inside of a cavity and the flux per unit weight of the resultant anisotropic bonded magnet.\n\nBEST MODE FOR CARRYING OUT THE INVENTION\n\n[0037]The present inventors discovered that if a weak magnetic field is applied as a static magnetic field to a magnetic powder being fed into the cavity of a press machine, a permanent magnet having a sufficiently high degree of alignment can be obtained without applying any strong aligning magnetic field thereto as in the conventional process. The present inventors obtained the basic idea of the present invention in this manner.\n\n[0038]According to the present invention, the strength of the magnetic field to be applied for alignment purposes is so weak that the remanent magnetization of the as-pressed compact can be reduced sufficiently. Thus, there is no need to perform any additional degaussing process thereon.\n\n[0039]It should be noted that a technique of aligning a magnetic powder effectively by applying an aligning magnetic field to the magnetic powder being transported (i.e., dropped) into a cavity is already described in Japanese Laid-Open Publications Nos. 2001-93712 and 2001-226701. In the present invention, however, a permanent magnet compaction process is carried out with a significantly smaller magnetic field than that disclosed in any of these publications, thereby reducing the surface flux density, resulting from the remanent magnetization of the compact, to 0.005 tesla or less without performing any degaussing process step. According to the present invention, no aligning magnetic field generator of a big size is needed anymore unlike the conventional process and the cycle time of the pressing process can be shortened significantly.\n\nEmbodiment 1\n\n[0040]Hereinafter, a first specific preferred embodiment of the present invention will be described with reference to the accompanying drawings. In this preferred embodiment, an anisotropic bonded magnet is produced.\n\n[0041]FIGS. 1(a) through 1(d) show main process steps (i.e., from the process step of feeding a powder under an aligning magnetic field to the process step of compacting the powder) of a magnet producing method according to the present invention. The press machine 10 shown in FIG. 1 includes a die 2 having a through hole 1, an upper punch 3 and a lower punch 4, which are able to reciprocate inside of, and with respect to, the through hole 1, and a powder feeder (e.g., feeder box) 6 for feeding a magnetic powder (i.e., a compound) 5 into a cavity that is defined inside of the through hole 1 of the die 2.\n\n[0042]In this preferred embodiment, at least a portion of the magnetic member (made of a ferromagnetic material) used as the die 2 has been magnetized. Thus, a weak magnetic field can be applied as a static magnetic field to the magnetic powder 5 being transported into the cavity. The degree of magnetization is defined such that the strength of the weak magnetic field, created inside of the cavity, falls within the range of about 8 kA/m to about 120 kA/m (as measured at the center of the cavity). The magnetic member magnetized steadily forms a weak magnetic field as a static magnetic field (as identified by the reference sign “M” in FIG. 1) inside of the cavity, thereby appropriately aligning the compound being fed.\n\n[0043]The magnetic member for use to create the weak magnetic field as a static magnetic field is preferably provided near the cavity. However, its specific arrangement and configuration may be appropriately designed according to the desired magnetic field distribution. A die, provided for a normal press machine, includes a member (or a portion) that is made of a ferromagnetic material. Accordingly, if that member (or portion) is magnetized under a strong magnetic field, magnetization at a required level is achieved. The magnetic member may be magnetized either before the die is set in the press machine or after the die has already been set in the press machine. A conventional press machine for an anisotropic bonded magnet includes a coil for generating a strong aligning magnetic field to be applied after the powder has been fed. Thus, a portion of the die may also be magnetized with the strong magnetic field being created by this coil.\n\n[0044]It should be noted that instead of magnetizing a portion of the die 2, a permanent magnet may be embedded in the die 2 or provided around the die 2. FIGS. 2(a) and 2(b) show an example in which a pair of permanent magnets (e.g., rare-earth sintered magnets) 7 are arranged on right- and left-hand sides of the die 2. In this example, an aligning magnetic field is created in the cavity space by the two permanent magnets 7. In creating an aligning magnetic field by arranging the permanent magnets 7, if the arrangement is modified by appropriately changing the number or the degree of magnetization of the permanent magnets used, then a novel aligning magnetic field distribution, which has been unachievable by any conventional method, can also be formed.\n\n[0045]Hereinafter, a method for producing an anisotropic bonded magnet with the machine shown in FIG. 1 will be described.\n\n[0046]First, a mixture (i.e., a compound) 5 of the HDDR powder described above and a binder (i.e., a binder resin) is prepared. The feeder box 6 is filled with this compound 5 and then transported to a position just over the cavity of the die 2 of the press machine as shown in FIGS. 1(a) and 1(b). Then, the compound 5 drops into the cavity and fills the cavity. While the cavity is being filled with the powder in this manner, the powder particles, included in the compound 5, are effectively aligned under a weak magnetic field as a static magnetic field. This is believed to be because the respective powder particles being transported into the cavity can rotate relatively easily while dropping into the cavity.\n\n[0047]The present inventors discovered via experiments that the compound 5 being loaded into the cavity should be dropped into the cavity little by little in a relatively long time rather than in quantity at a time. The reason is believed to be as follows. Specifically, if the compound 5 is fed as relatively large chunks, then the free motion (e.g., rotation among other things) of the respective powder particles will be interfered with and the degree of alignment will decrease. In contrast, if the compound 5 is fed little by little, then the respective powder particles can rotate relatively freely and can be aligned smoothly even under a weak magnetic field.\n\n[0048]If a strong static magnetic field was applied from a conventional coil for applying an aligning magnetic field to the compound 5 being loaded into the cavity, then the powder particles would be cross-linked together in the direction of the aligning magnetic field between the inner walls of the cavity, thus clogging the cavity up partially. In that case, the cavity could not be filled with the powder uniformly. In contrast, if a relatively weak magnetic field is applied to the compound 5 as is done in this preferred embodiment, then the powder particles are hardly cross-linked together magnetically.\n\n[0049]Next, after the feeder box 6 has been brought back from over the cavity to a retreated position as shown in FIG. 1(c), the upper punch 3 is lowered as shown in FIG. 1(d), thereby compressing the compound 5 in the cavity and obtaining a compact 7.\n\n[0050]In this preferred embodiment, the powder being fed is aligned under a magnetic field. Thus, even a relatively weak magnetic field of about 8 kA/m to about 120 kA/m can achieve a sufficiently high degree of alignment. Conversely, if the magnetic field applied is too strong (e.g., more than 800 kA/m as in the conventional aligning magnetic field), then the powder particles would be cross-linked together magnetically, thus interfering with smooth powder feeding unintentionally.\n\n[0051]According to this preferred embodiment, the magnetization of the as-pressed compact 7 (i.e., the remnant magnetization) can be reduced by at least one order of magnitude as compared with the conventional one. Thus, various operations that have been required in the conventional process step of aligning the loaded powder under a strong magnetic field (e.g., creating a very small space over the powder in the cavity to get the powder aligned more easily, aligning the powder in such a state, and immediately pressing and compressing the powder to obtain a compact) are not needed anymore. In addition, the compact 7 does not have to be subjected to any degaussing process, either. As a result, according to this preferred embodiment, the cycle time of the pressing process can be shortened to half or less of that of the conventional anisotropic bonded magnet (i.e., approximately equal to that of an isotropic magnet).\n\n[0052]Furthermore, according to this preferred embodiment, the aligning magnetic field is created by the weakly magnetized magnetic member. Thus, the aligning magnetic field is continuously applied not just during powder feeding but also compressing the compound 5 between the upper and lower punches 3 and 4. As a result, the disturbed orientations, which are likely to occur during the compaction process, can be minimized.\n\nEmbodiment 2\n\n[0053]Hereinafter, a second specific preferred embodiment of the present invention will be described with reference to FIGS. 3 through 7. In this preferred embodiment, a radially aligned ring-shaped anisotropic bonded magnet is produced. Specifically, a substantially radially aligned, thin-ring-shaped anisotropic bonded magnet 11 such as that shown in FIG. 5 can be obtained by using the die 2 shown in FIGS. 4(a) and 4(b).\n\n[0054]The die 2 for use in this preferred embodiment is made of a ferromagnetic material and has a through hole at the center thereof as shown in FIG. 4. A cylindrical core 8, which is also made of a ferromagnetic material, is inserted into the center of the through hole. In this preferred embodiment, a permanent magnet 9, magnetized in the direction in which the core 8 moves, is provided for the lower portion of the core 8. Thus, the core 8 itself is also magnetized. The cavity is defined between the inner wall of the die through hole and the outer surface of the core 8. A radially aligning magnetic field is created inside of the cavity by the core 8 and the die 2.\n\n[0055]Hereinafter, it will be described with reference to FIG. 3 how the press machine of this preferred embodiment operates.\n\n[0056]First, as in the first preferred embodiment described above, a mixture (i.e., a compound) 5 of the HDDR powder and a binder (i.e., a binder resin) is prepared. The feeder box 6 is filled with this compound 5 and then transported to a position just over the die 2 of the press machine 10 as shown in FIG. 3(a). More specifically, the feeder box 6 should be located over a portion of the die 2 where the cavity will be defined. In this preferred embodiment, the respective upper surfaces of the die 2, lower punch 4 and core 8 are located at substantially equal levels at this point in time, and therefore, no cavity space has been defined yet.\n\n[0057]Next, as shown in FIG. 3(b), the core 8 is moved upward with respect to the die 2 and the lower punch 4. Thereafter, as shown in FIG. 3(c), the die 2 is moved upward with respect to the core 8 and the lower punch 4, thereby aligning the upper surface level of the die 2 with that of the core 8. As a result of these operations, the cavity is defined and filled with the compound 5.\n\n[0058]While the powder is being loaded into the cavity in this manner, the powder particles, included in the compound 5, are radially aligned effectively under a weak magnetic field, which is created as a static magnetic field between the core 8 and the die 2 that have been magnetized by the permanent magnet 9 (see FIG. 4).\n\n[0059]According to this preferred embodiment, while the cavity is being filled with the compound 5, no powder particles will be cross-linked together between the inner walls of the cavity and clog the cavity up partially. For that reason, the powder can be loaded more uniformly and more quickly than the first preferred embodiment described above. Thus, the method of this preferred embodiment is effectively applicable for use in a cavity that is normally hard to fill with the powder completely. Among other things, this method is particularly effective in producing a thin-ring-shaped anisotropic bonded magnet.\n\n[0060]Next, after the feeder box 6 has been brought back from over the cavity to a retreated position as shown in FIG. 3(d), the upper punch (not shown) is lowered, thereby compressing the compound 5 in the cavity and obtaining a compact.\n\n[0061]In this preferred embodiment, the powder being fed is aligned under a magnetic field. Thus, even a weak magnetic field can achieve a sufficiently high degree of alignment. As a result, the magnetization of the as-pressed compact (i.e., the remnant magnetization) can be reduced by at least one order of magnitude as compared with the conventional one.\n\n[0062]Furthermore, according to this preferred embodiment, the aligning magnetic field is created by the weakly magnetized magnetic member as in the preferred embodiment described above. Thus, the aligning magnetic field is continuously applied not just during powder feeding but also compressing the compound 5 between the upper punch and the lower punch 4.\n\n[0063]In the preferred embodiment described above, after the feeder box 6 has been transported to over a region where the cavity will be defined and before the cavity space is defined, the core is inserted into the feeder box. However, the present invention is not limited to such a powder feeding method. Alternatively, the cavity may be defined under the feeder box 6 and filled with the compound 5 at the same time by moving the core 8 and the die 2 upward with respect to the lower punch 4 as shown in FIGS. 6(a) through 6(e). As another alternative, the feeder box 6 may be transported to over a predefined cavity so as to allow the compound 5 to drop from the feeder box 6 into the cavity as shown in FIGS. 7(a) through 7(e).\n\n[0064]FIG. 8 shows a configuration for another press machine that may be used in this preferred embodiment. In the press machine having the configuration shown in FIG. 8, a radially aligned ring-shaped permanent magnet 9 (that has been magnetized so as to have an S pole inside and an N pole outside in the example shown in FIG. 8) is provided on the inner walls of the through hole of the die 2. A cavity is defined between the inner surface of this permanent magnet 9 and the outer surface of the core 8. When the compound 5 that has been loaded into the cavity is compressed, a strong friction is caused by the compound 5 on the inner surface of the permanent magnet 9. Thus, to prevent the permanent magnet 9 from being damaged, a thin film member is preferably provided between the inner surface of the permanent magnet 9 and the lower punch 4.\n\n[0065]The thin film member may be made of either a non-magnetic material or a magnetic material and may be either a metal or a non-metal such as a ceramic.\n\n[0066]Even when the arrangement shown in FIG. 8 is adopted, the radial alignment is achieved as effectively as in the arrangement shown in FIG. 4. Optionally, a press machine having both of the arrangements shown in FIGS. 4 and 8 may also be used. In that case, the two types of permanent magnets generate appropriate aligning magnetic field distributions and the radial alignment is achieved even more effectively.\n\n[0067]Also, in the arrangement shown in FIG. 8, the radially aligned ring-shaped permanent magnet 9 is provided on the inner walls of the through hole of the die 2. Alternatively, a radially aligned ring-shaped permanent magnet may be provided on the outer surface of the core 8 and a cavity may be defined between the outer surface of this ring-shaped permanent magnet and the inner walls of the through hole of the die 2. As another alternative, these radially aligned ring-shaped permanent magnets may also be provided both on the inner walls of the through hole of the die 2 and on the outer surface of the core 8. Even so, the desired radial alignment is also achievable.\n\n[0068]In the preferred embodiment described above, the radially aligned ring-shaped permanent magnet is magnetized such that the inner or outer surface thereof exhibits a single magnetic polarity (i.e., either N pole or S pole). Alternatively, a ring-shaped permanent magnet to be provided on the inner walls of a dice-shaped through hole may have multiple pairs of opposite magnetic poles that are arranged alternately along the inner surface thereof. When such a configuration is adopted, the resultant ring-shaped permanent magnet may be aligned so as to exhibit multipolar anisotropy on the outer surface thereof (see Japanese Laid-Open Publication No. 1-27208, for example). In the same way, a ring-shaped permanent magnet to be provided on the outer surface of a core may also have multiple pairs of opposite magnetic poles that are arranged alternately along the outer surface thereof. When such a configuration is adopted, the resultant ring-shaped permanent magnet may be aligned so as to exhibit multipolar anisotropy on the inner surface thereof. It should be noted that such a magnet with multipolar anisotropy does not have to be aligned by using the ring-shaped permanent magnet as an aligning magnet as described above. Alternatively, any other known arrangement may also be adopted as well. For example, a number of arched magnets may be arranged in a ring shape such that multiple pairs of opposite magnetic poles alternate one after another. Also, a groove to embed a coil for creating an aligning weak magnetic field may be defined on the inner walls of a dice-shaped through hole.\n\n[0069]In each of various preferred embodiments described above (including perpendicular alignment, radial alignment and multipolar alignment), the aligning magnetic field is applied horizontally, i.e., perpendicularly to the pressing direction (i.e., uniaxial compressing direction). Thus, the powder particles, filling the cavity, are aligned horizontally. Due to magnetic interactions, the powder particles are chained together horizontally. Powder particles, which are located on the upper surface of the loaded powder, are also chained together horizontally. As a result, the powder can be easily stored in the cavity completely without overflowing from the cavity.\n\n[0070]If the aligning magnetic field is applied parallel to the pressing direction, then the permanent magnet 9 may be provided under the lower punch 4 as shown in FIG. 9. In such an arrangement, the magnetization can be stronger on the lower punch 4 than on the upper punch 3. Thus, the compound 5 can be fed into the cavity smoothly.\n\n[0071]FIG. 9 shows a state in which the compound in the cavity, defined by the upper surface of the lower punch 4 (on which the permanent magnet 9 is provided) and the inner walls of the through hole of the die 2, is being compressed by lowering the upper punch 3 after the compound has been fed into the cavity and aligned in the direction indicated by the arrow M.\n\n[0072]In the arrangement shown in FIG. 9, the relative position of the permanent magnet 9 changes as the lower punch 4 goes up or down with respect to the die 2. However, while the compound is being fed, the lower punch 4 does not move at all, and therefore, neither the direction nor the strength of the aligning magnetic field, existing in the cavity space that is defined by the upper surface of the lower punch 4 and the inner walls of the through hole of the die 2, changes. As used herein, the “static magnetic field” refers to a magnetic field of which the direction and strength are kept substantially constant in a coordinate system that is defined by reference to the location of the cavity while the magnetic powder is being fed. Accordingly, even if the permanent magnet or the magnetic member, magnetized by the permanent magnet, moves due to the mechanical operation of the press machine, the aligning magnetic field, created in the cavity while the magnetic powder is being fed thereto, is still a “static magnetic field” as long as the direction and strength of the aligning magnetic field do not change with time but are substantially constant.\n\n[0073]It should be noted that the center axis of the cavity of the press machine may define a tilt angle with respect to the perpendicular direction. Also, the direction of the aligning magnetic field may also defi', '技术领域 \n\n [0001] 本发明涉及一种用于制造永磁体的方法,并且还涉及一种冲压机。 \n\n 背景技术 \n\n [0002] R-Fe-B基稀土磁体(其中R是包括Y的稀土元素之一,Fe是铁,B是硼)是典型的高性能永磁体,其结构包括 主相,R 2 铁 14 B相是叔四方化合物,具有出色的磁体性能。 \n\n [0003] 这种基于R-Fe-B的稀土磁体大致可分为烧结磁体和粘结磁体。 通过使用压机将R-Fe-B基磁体合金的细粉(平均粒径为几μm)压实,然后烧结所得的烧结体,来制造烧结磁体。 另一方面,粘结磁铁是通过在压力机内将R-Fe-B基磁铁合金(粒径约为100μm)的粉末和粘结剂树脂的混合物(即化合物)压实而成的。  。 \n\n [0004] 烧结磁体由具有较小粒径的粉末制成,因此,其各自的粉末颗粒表现出磁各向异性。 因此,通过压制机对被压实的粉末施加取向磁场,从而获得使粉末粒子沿磁场方向取向的压粉体。 \n\n [0005] 另一方面,在粘结磁体中,所使用的粉末颗粒具有超过单畴临界尺寸的粒径,并且通常不表现出磁各向异性并且在施加的磁场下不能取向。 因此,为了制造其中粉末颗粒沿特定方向排列的各向异性粘结磁体,需要建立一种制造磁性粉末的技术,该磁性粉末的各个粉末颗粒均表现出磁各向异性。 \n\n [0006] 为了制造用于各向异性粘结磁体的稀土合金粉末,目前正在进行HDDR(氢化-歧化-解吸-复合)工艺。  “ HDDR”过程是指以该顺序进行氢化,歧化,解吸和重组的过程。 在该HDDR工艺中,将R-Fe-B基合金的铸锭或粉末保持在500℃至1000℃的温度范围内。 2  气体气氛或H的混合物 2  气体和惰性气体吸收氢。 之后,将氢化的锭或粉末在500℃至1,000℃的温度下进行解吸过程,直到具有H的真空气氛。 2  小于或等于13 Pa的分压或带有H的惰性气氛 2  产生13 Pa或更小的分压。 然后,将解吸的锭或粉末冷却,从而获得合金磁体粉末。 \n\n [0007] 通过这种HDDR工艺生产的基于R-Fe-B的合金粉末表现出巨大的矫顽力并且具有磁各向异性。 合金粉末具有这样的性质,因为其金属结构基本上变成0.1μm至1μm的非常小的尺寸的晶体的聚集体。 更具体地说,由于通过HDDR工艺获得的非常小的晶体的晶粒尺寸接近四边形R的单畴临界尺寸,因此实现了高矫顽力。 2 铁 14 B基化合物。 那些非常小的四方R晶体的聚集 2 铁 14 B基化合物在本文中将被称为“重结晶织构”。 例如,在日本专利公报第6-82575号和第7-168561号中公开了通过HDDR工艺制造具有重结晶织构的R-Fe-B基合金粉末的方法。 \n\n [0008] 然而,如果用通过HDDR工艺制备的磁粉(在本文中称为“ HDDR粉”)生产各向异性粘结磁体,则将出现以下问题。 \n\n [0009] 通过在对准磁场下挤压HDDR粉末和粘合剂树脂的混合物(即化合物)而获得的压块已经通过对准磁场被强磁化。 然而,如果压块保持磁化,则磁体粉末可能被吸引向压块的表面,或者压块可能彼此吸引并接触而被切碎。 在那种情况下,在随后的制造工艺步骤中处理这种压块将是非常麻烦的。 因此,在将压坯从压力机上卸下之前,需要将其充分消磁。 因此,在从压机上卸下磁化的压块之前,需要进行“消磁处理”,该消磁处理是将消磁磁场(例如,消磁磁场)的方向与对齐磁场的方向相反,或者将交变的衰减磁场施加到磁头上。 紧凑需要进行。 然而,这种消磁过程通常花费长达数十秒的时间。 因此,在这种情况下,加压处理的循环时间将是不进行消磁处理的情况的两倍(即,各向同性粘结磁铁的循环时间)。 当以这种方式延长循环时间时,批量生产将降低并且磁体的制造成本将无意中增加。 \n\n [0010] 另一方面,对于烧结磁体,即使其压块没有被充分消磁,由于从一开始其材料磁体粉末的矫顽力就低,该压块仍保持略微磁化。 另外,在烧结工序中,使磁铁粉末暴露于比居里温度高的高温下。 因此,磁体粉末在经受磁化处理步骤之前将被完全消磁。 相反,对于各向异性粘结磁体,如果其压块在从压机中卸载时保持磁化,则磁化将保持在那里直到磁化处理步骤。 并且,如果粘结磁体在磁化处理步骤中保持磁化,则由于磁体的磁滞特性,磁体很难磁化。 \n\n [0011] 为了克服上述问题,本发明的主要目的是提供一种通过避免上述问题而以降低的成本制造易于磁化的永磁体(例如,各向异性粘结磁体)的方法和压力机。 由压块的不需要的剩余磁化引起的问题。 \n\n 发明内容 \n\n [0012] 根据本发明的永磁体制造方法是通过将磁性粉末供给到压制机的腔中并压实磁性粉末来制造永磁体的方法。 该方法包括以下步骤:在包括腔的空间中产生弱磁场作为静磁场,并且在使磁粉平行于弱磁场的方向排列的同时向腔内部传送磁粉; 并在腔体内压实磁性粉末,从而获得压实体。 \n\n [0013] 在一个优选实施例中,通过使用被稳定地磁化的磁性构件来产生弱磁场。 \n\n [0014] 在另一个优选实施例中,在压实空腔内部的磁粉的步骤中还施加了弱磁场。 \n\n [0015] 在另一个优选实施例中,调节弱磁场,使得刚由压机压制的压块的表面通量密度为0.005特斯拉或更小。 \n\n [0016] 在另一个优选实施例中,在腔室内将弱磁场的强度调节到8kA / m至120kA / m的范围。 \n\n [0017] 弱磁场的强度优选被调整为上限为100kA / m以下,更优选为80kA / m以下。 \n\n [0018] 在另一个优选的实施方案中,在将磁性粉末压实在空腔内部之后,将压块从空腔中卸载而不进行任何消磁过程。 \n\n [0019] 在另一个优选实施例中,磁性构件是构成压力机的模具的构件之一。 \n\n [0020] 在另一个优选实施例中,磁性构件的至少一部分是永磁体。 \n\n [0021] 在另一个优选的实施方案中,至少一部分磁性粉末是HDDR粉末。 \n\n [0022] 在另一个优选实施例中,压机包括:具有通孔的模具; 芯,该芯在通孔内并相对于通孔往复运动; 下部冲头,其在通孔的内表面和型芯的外表面之间并且相对于模具往复运动。 将磁性粉末向腔体内输送的步骤包括以下步骤:在用下冲头将通孔封闭后,将包括磁性粉末的供料箱定位在模具的通孔上方; 使型芯相对于模具向上移动; 相对于芯向上移动模具,从而在进料箱下方限定腔。 \n\n [0023] 根据本发明的压力机包括:具有通孔的模具; 上冲头和下冲头,它们能够在通孔内部相对于模具往复运动; 粉末进料器,用于将磁性粉末进料到在模具的通孔内部限定的腔中。 压机还包括已被磁化以用于对准目的的构件。 所述部件用于将弱磁场作为静磁场施加到正被输送到腔体中的磁粉。 \n\n [0024] 在一优选实施例中,已被磁化以用于对准目的的构件中的至少一个是永磁体。 \n\n [0025] 根据本发明的永磁体通过压制工艺生产。 通过在作为静态磁场的弱磁场下将压机内部的磁性粉末排列并压实来获得磁体。 磁铁的剩余磁化强度是在不经过任何消磁过程的情况下,从压机上卸下时的表面通量密度等于或小于0.005特斯拉。 \n\n 附图说明 \n\n [0026] 无花果 1( a )通过 1 ( d 图1是示出根据本发明的优选实施例的压力机的主要构件如何在各个制造工艺步骤中操作的截面图。 \n\n [0027] 图。 图2示出了一种布置,其中将永磁体用作用于产生弱对准磁场的磁性构件。 \n\n [0028] 无花果 3( a )通过 3 ( d 图2是示出根据本发明的第二特定优选实施例的压力机的主要构件如何在各个制造工艺步骤中操作的截面图。 \n\n [0029] 图。 图4示出了用于本发明的第二优选实施例的压机的构造。 \n\n [0030] 图。 图5示出了通过本发明获得的薄环形状的各向异性粘结磁体。 \n\n [0031] 无花果 6( a )通过 6 ( e 图1是示出根据本发明的另一特定优选实施例的压力机的主要构件如何在各个制造工艺步骤中操作的截面图。 \n\n [0032] 无花果 7( a )通过 7 ( e 图2是示出根据本发明的又一特定优选实施例的压力机的主要构件如何在各个制造工艺步骤中操作的截面图。 \n\n [0033] 图。 图8示出了用于本发明的第二优选实施例的另一压力机的构造。 \n\n [0034] 图。 图9示出了用于本发明的第二优选实施例的又一压力机的构造。 \n\n [0035] 图。 图10是示出在腔体内产生的弱磁场的强度与最大能量乘积(BH)之间的关系的图。 最高  所得各向异性粘结磁体的百分数。 \n\n [0036] 图。 图11是表示在腔体内产生的弱磁场的强度与所得到的各向异性粘结磁体的每单位重量的磁通之间的关系的曲线图。 \n\n 实施本发明的最佳模式 \n\n [0037] 本发明人发现,如果将弱磁场作为静磁场施加到被馈送到压制机腔体中的磁粉上,则无需施加任何强取向磁场就可以获得具有足够高取向度的永磁体。 如常规方法中那样,将其置于磁场中。 本发明人以这种方式获得了本发明的基本思想。 \n\n [0038] 根据本发明,要用于对准目的的磁场强度很弱,以至于可以充分减小压制坯体的剩余磁化强度。 因此,不需要在其上执行任何附加的消磁处理。 \n\n [0039] 应当注意,在日本特开2001-93712和2001-2001中已经描述了通过将对准磁场施加到正被传送(即下落)到腔中的磁粉来有效地对准磁粉的技术。  226701。 然而,在本发明中,以比这些出版物中的任何一种所公开的磁场都要小得多的磁场来进行永磁体的压紧工艺,从而将由压块的剩余磁化引起的表面通量密度减小到0.005特斯拉或 无需执行任何消磁处理步骤就更少了。 根据本发明,与常规方法不同,不再需要大尺寸的对准磁场发生器,并且可以显着缩短压制过程的周期时间。 \n\n 实施例1 \n\n [0040] 在下文中,将参考附图描述本发明的第一特定优选实施例。 在该优选实施例中,生产各向异性粘结磁体。 \n\n [0041] 无花果 1( a )通过 1 ( d )示出了根据本发明的磁体制造方法的主要工艺步骤(即,从在对准磁场下供给粉末的工艺步骤到压实粉末的工艺步骤)。 压机 10  如图所示。  1个包含模具 2  有通孔 1 一拳 3  和一个较低的拳 4 ,它们能够在通孔内并相对于通孔往复运动 1 ,以及供粉器(例如供纸盒) 6  用于喂入磁性粉末(即化合物) 5  进入通孔内部定义的空腔中 1  死的 2 。 \n\n [0042] 在该优选实施例中,用作模具的磁性部件(由铁磁性材料制成)的至少一部分 2  已被磁化。 因此,可以将弱磁场作为静磁场施加于磁粉。 5  被运送到空腔中。 磁化度被定义为使得在腔内部产生的弱磁场的强度落在大约8kA / m至大约120kA / m的范围内(在腔的中心处测量)。 被磁化的磁性部件在腔室内稳定地形成弱磁场作为静磁场(如图1中的附图标记“ M”所示),从而适当地排列所供给的化合物。 \n\n [0043] 优选在腔室附近设置用于产生弱磁场作为静磁场的磁性部件。 然而,可以根据期望的磁场分布适当地设计其特定的布置和构造。 为普通压力机提供的模具包括由铁磁材料制成的构件(或一部分)。 因此,如果该构件(或部分)在强磁场下被磁化,则达到所需水平的磁化。 可以在将模具放置在压力机中之前或在将模具放置在压力机中之后将磁性部件磁化。 用于各向异性粘结磁体的常规压制机包括线圈,该线圈用于产生在供给粉末之后要施加的强取向磁场。 因此,通过该线圈产生的强磁场也可以使模具的一部分磁化。 \n\n [0044] 应该注意的是,代替磁化模具的一部分 2 ,可以将永久磁铁嵌入模具中 2  或提供在模具周围 2 。 无花果 2( a )和 2 ( b )显示了一对永磁体(例如,稀土烧结磁体)的示例 7  排列在模具的左右两侧 2 。 在此示例中,两个永磁体在型腔空间中产生了对齐磁场 7 。 通过排列永磁体产生对准磁场 7 如果通过适当地改变所使用的永磁体的数量或磁化程度来改变布置,则还可以形成任何常规方法都无法实现的新颖的对准磁场分布。 \n\n [0045] 以下,使用图1所示的机器制造各向异性粘结磁铁的方法如下。 将描述图1。 \n\n [0046] 首先,是混合物(即化合物) 5  制备上述HDDR粉末和粘合剂(即,粘合剂树脂)。 接驳箱 6  充满了这种化合物 5  然后运输到模具腔上方的位置 2  如图1和2所示的压力机的结构。  1( a )和 1 ( b )。 然后,化合物 5  掉进空腔并充满空腔。 当腔体以这种方式填充粉末时,化合物中包含的粉末颗粒 5 在弱磁场下作为静态磁场有效地对准。 认为这是因为被输送到空腔中的各个粉末颗粒在落入空腔中时可以相对容易地旋转。 \n\n [0047] 本发明人通过实验发现该化合物 5  被加载到空腔中的物体应该在相对较长的时间内一点一点地掉入空腔中,而不是一次大量地掉入。 认为原因如下。 具体来说,如果 5  当以相对较大的块进料时,相应粉末颗粒的自由运动(例如,旋转等)将受到干扰,并且排列程度将降低。 相反,如果复合 5  如果一点一点地加料,则各个粉末颗粒即使在弱磁场下也可以相对自由地旋转并且可以平滑地取向。 \n\n [0048] 如果从常规线圈施加了强大的静磁场以向化合物施加对准磁场 5  当将粉末颗粒装载到空腔中时,粉末颗粒将在空腔内壁之间的对齐磁场方向上交联在一起,从而部分堵塞空腔。 在这种情况下,空腔不能均匀地填充粉末。 相反,如果对化合物施加相对弱的磁场 5  如在该优选实施方案中所做的那样,那么粉末颗粒几乎没有磁性交联在一起。 \n\n [0049] 接下来,进纸匣之后 6  如图2所示,从腔上方移回的腔体已回到缩回位置。  1( c ),上拳 3  如图3所示降低。  1( d ),从而压缩混合物 5  在空腔中并获得紧凑 7 。 \n\n [0050] 在该优选实施例中,被供给的粉末在磁场下对准。 因此,即使是大约8kA / m至大约120kA / m的相对弱的磁场也可以实现足够高的对准度。 相反,如果所施加的磁场太强(例如,如常规对准磁场中那样大于800kA / m),则粉末颗粒将磁性交联在一起,从而无意中干扰了平滑的粉末进料。 \n\n [0051] 根据该优选实施例,被压制的压块的磁化 7  与常规磁化强度相比,磁化强度(即剩余磁化强度)可以减小至少一个数量级。 因此,在传统的处理步骤中,需要在强磁场下对准装入的粉末(例如,在腔体中的粉末上创建很小的空间以使粉末更容易对准,在这种情况下将粉末对准)的常规处理步骤中需要进行各种操作。 在这种状态下,不再需要立即压制和压缩粉末以获得压块。 另外,紧凑 7  也不必进行任何消磁处理。 结果,根据该优选实施例,压制过程的周期时间可以缩短到传统各向异性粘结磁体的周期的一半或更短(即,大约等于各向同性磁体的周期)。 \n\n [0052] 此外,根据该优选实施例,由弱磁化的磁性构件产生对准磁场。 因此,不仅在送粉过程中连续施加取向磁场,而且还压缩化合物 5  上下冲头之间 3  和 4 。 结果,可以最小化在压实过程中可能发生的扰动取向。 \n\n 实施例2 \n\n [0053] 在下文中,将参照图1至图6描述本发明的第二特定优选实施例。 参照图3至图7。在该优选实施例中,制造了径向对准的环形各向异性粘结磁体。 具体地,基本上径向对准的薄环形状的各向异性粘结磁体 11  如图2所示。 使用模具可获得5个 2  如图所示。  4( a )和 4 ( b )。 \n\n [0054] 死 2  如图1所示,在本优选实施例中使用的“铁”由铁磁性材料制成,并且在其中心具有通孔。  4.圆柱芯 8 也是由铁磁材料制成的,被插入通孔的中心。 在该优选实施例中,永磁体 9 ,在磁芯的方向上被磁化 8  移动,提供给核心的下部 8 。 因此,核心 8  本身也被磁化。 该空腔被限定在芯片通孔的内壁和芯的外表面之间。 8 。 磁芯在空腔内部产生径向对齐的磁场 8  和死 2 。 \n\n [0055] 在下文中,将参考图2进行描述。 图3示出了该优选实施方式的压力机的工作方式。 \n\n [0056] 首先,如上述第一优选实施例中那样,混合物(即化合物) 5  制备HDDR粉末和粘合剂(即,粘合剂树脂)。 接驳箱 6  充满了这种化合物 5  然后运到模具上方的位置 2  压机的 10  如图 3( a )。 更具体地说,进纸器盒 6  应该位于模具的一部分上 2  将在其中定义空腔的位置。 在该优选实施例中,模具的各个上表面 2 下冲头 4  和核心 8  在这个时间点,它们的位置基本相等,因此,尚未定义空腔空间。 \n\n [0057] 接下来,如图2所示,将其设置为0。  3( b ), 核心 8  相对于模具向上移动 2  和下拳 4 。 此后,如图2所示,  3( c ),死 2  相对于核心向上移动 8 和下拳 4 ,从而对齐模具的上表面水平 2  与核心 8 。 这些操作的结果是,定义了空腔并填充了化合物 5 。 \n\n [0058] 当粉末以这种方式被加载到空腔中时,包含在混合物中的粉末颗粒 5 ,在纤芯之间作为静磁场产生的弱磁场下有效地径向对齐 8  和死 2  被永久磁铁磁化的 9  (见图4)。 \n\n [0059] 根据该优选实施例,当空腔填充有化合物时 5 ,没有粉末颗粒将在型腔的内壁之间交联在一起,并且不会部分堵塞型腔。 因此,与上述第一实施方式相比,能够更均匀且更快地装载粉末。 因此,该优选实施例的方法可有效地用于通常难以完全填充粉末的空腔中。 其中,该方法在制造薄环形状的各向异性粘结磁体方面特别有效。 \n\n [0060] 接下来,进纸匣之后 6  如图2所示,从腔上方移回的腔体已回到缩回位置。  3( d ),降低上冲头(未显示),从而压缩混合物 5  在型腔中并获得压实。 \n\n [0061] 在该优选实施例中,被供给的粉末在磁场下对准。 因此,即使是弱磁场也可以实现足够高的对准度。 结果,与传统的压坯相比,压制后的压坯的磁化强度(即残余磁化强度)可减小至少一个数量级。 \n\n [0062] 此外,根据该优选实施例,如上述优选实施例中那样,通过弱磁化的磁性部件产生对准磁场。 因此,不仅在送粉过程中连续施加取向磁场,而且还压缩化合物 5  在上冲头和下冲头之间 4 。 \n\n [0063] 在上述优选实施例中,在接驳箱之后 6  芯被输送到将要限定空腔的区域上,并且在限定空腔空间之前,将芯插入进料箱。 然而,本发明不限于这种粉末进料方法。 可替代地,可以在进料箱下方限定腔体 6  并充满了化合物 5  同时移动核心 8  和死 2  相对于下冲头向上 4  如图所示。  6( a )通过 6 ( e )。 另一种选择是供纸盒 6  可以将其运输到预定的腔体上,以使化合物 5  从进纸器箱掉落 6  进入腔中,如图1和2所示。  7( a )通过 7 ( e )。 \n\n [0064] 图。 图8示出了可以在该优选实施例中使用的另一压力机的构造。 在具有图1所示的构造的压机中, 参照图8,径向对准的环形永磁体 9  (在图8所示的例子中,被磁化为内部为S极,外部为N极)被设置在模具的通孔的内壁上。 2 。 在此永磁体的内表面之间定义了一个空腔 9  和核心的外表面 8 。 当复合 5  被加载到空腔中的物体被压缩,复合物引起强烈的摩擦 5  在永久磁铁的内表面 9 。 因此,防止永磁体 9  为了防止损坏,优选在永久磁铁的内表面之间设置薄膜构件。 9  和下拳 4 。 \n\n [0065] 薄膜构件可以由非磁性材料或磁性材料制成,并且可以是金属或诸如陶瓷的非金属。 \n\n [0066] 即使当图1所示的布置 采用图8所示的结构,与图7所示的布置一样有效地实现了径向对准。 可选地,具有图1至图4中所示的两种布置的压力机可以被制造。  4和 8  也可以使用。 在那种情况下,两种类型的永磁体产生适当的对准磁场分布,并且甚至更有效地实现了径向对准。 \n\n [0067] 同样,在图1所示的布置中,  8,径向对准的环形永磁体 9  设置在模具通孔的内壁上 2 。 可替代地,可以在芯的外表面上设置径向对准的环形永磁体。 8  在该环状永磁体的外表面与模具的通孔的内壁之间可以形成空腔。 2 。 作为另一种选择,这些径向对准的环形永磁体也可以同时设置在模具的通孔的内壁上。 2  并且在芯的外表面上 8 。 即使这样,也可以实现期望的径向对准。 \n\n [0068] 在上述优选实施例中,径向对齐的环形永磁体被磁化,使得其内表面或外表面呈现出单一的磁极性(即,N极或S极)。 可替代地,设置在骰子形通孔的内壁上的环形永磁体可以具有多对相反的磁极,其沿其内表面交替布置。 当采用这种构造时,可以将所得的环状永磁体排列成在其外表面上表现出多极各向异性(例如,参见日本特开平1-27208号公报)。 同样,设置在芯的外表面上的环形永磁体也可以具有沿其外表面交替布置的多对相反的磁极。 当采用这种构造时,可以将所得的环状永磁体排列成在其内表面上表现出多极各向异性。 应当注意,如上所述,这种具有多极各向异性的磁体不必通过使用环形永磁体作为对准磁体来对准。 替代地,也可以采用任何其他已知的布置。 例如,可以将多个拱形磁体布置成环形,使得多对相反的磁极彼此交替。 另外,可以在骰子形通孔的内壁上限定用于嵌入线圈以产生对准弱磁场的凹槽。 \n\n [0069] 在上述各种优选实施例中的每一个中(包括垂直对准,径向对准和多极对准),对准磁场是水平地,即垂直于挤压方向(即单轴压缩方向)施加的。 因此,填充空腔的粉末颗粒水平对准。 由于磁性相互作用,粉末颗粒水平链接在一起。 位于负载粉末上表面的粉末颗粒也水平链接在一起。 结果,粉末可以容易地完全存储在腔中而不会从腔中溢出。 \n\n [0070] 如果平行于挤压方向施加对准磁场,则永磁体 9  可以在下冲头下方提供 4  如图 9.在这种布置中,下冲头的磁化强度可能更高 4  比上一拳 3 。 因此, 5  可以顺利地送入型腔。 \n\n [0071] 图。 图9示出了由下冲头的上表面限定的腔体中的化合物的状态 4  (在其上的永磁体 9  提供)和模具通孔的内壁 2 ,通过降低上冲头被压缩 3  将化合物送入型腔并沿箭头M所示的方向对齐之后。 \n\n [0072] 在图1所示的布置中,  9,永磁体的相对位置 9  随下拳而改变 4 相对于模具上升或下降 2 。 但是,在进料时,下冲头 4  根本不移动,因此,由下冲头的上表面限定的空腔中存在的对准磁场的方向和强度都不存在 4  和模具通孔的内壁 2 , 变化。 如本文中所使用的,“静态磁场”是指在坐标系统中其方向和强度保持基本恒定的磁场,该坐标系统通过在馈送磁性粉末时参考腔的位置来限定。 因此,即使永磁体或被永磁体磁化的磁性构件由于压力机的机械操作而移动,在向腔体中馈送磁性粉末时在腔体中产生的对准磁场仍然是磁场。 只要对准磁场的方向和强度不随时间变化而是基本恒定,则为“静磁场”。 \n\n [0073] 应当注意,压制机的腔的中心轴线可以相对于垂直方向限定倾斜角。 而且,对准磁场的方向还可相对于水平方向限定一些倾斜角。 根据确切地应将永磁体形成为什么形状来适当地确定这些布置。 \n\n [0074] 在上述各种优选实施例的每一个中,使用已经沿预定方向磁化的永磁体。 但是,即使用线圈代替永磁体进行磁化,也可以获得类似的效果。 或者,不仅可以施加由被永磁体磁化的构件产生的弱取向磁场,而且还可以施加由线圈产生的磁场。 即使当使用这种附加磁场(在本文中称为“辅助磁场”)时,空腔中的对准磁场也优选具有8 kA / m至120 kA / m的强度,使得 所得的成形体的残余磁化强度低至0.005T以下。 也就是说,优选地根据期望的压块的形状和尺寸,磁性粉末的磁性,对准方向以及在磁性粉末进给过程中的粉末进给速度来优化腔中的对准磁场强度。 步。 为了实现完全对准,对准磁场优选具有高强度。 但是,从下面的具体示例的描述中可以清楚地看出,一旦对准磁场强度达到预定强度,就不再需要增加强度,因为在这种情况下,其作用已经饱和并且压块的剩余磁化强度刚刚增加。  。 本发明人通过实验发现并证实,磁场应具有至少8kA / m的强度以实现期望的对准。 考虑到剩余的磁化强度,其上限优选定义为120kA / m。 取向磁场的上限更优选为100kA / m,进一步优选为80kA / m。 应当注意,辅助磁场不必一定是静磁场,而还可以是诸如交变磁场或脉冲磁场之类的振荡磁场。 单位制。 \n\n [0075] 在第一特定示例中,在粉末进给处理步骤期间的粉末进给速率保持较低,但是在第二特定示例中被定义为尽可能高。 从图可以看出, 参照图10,在第一具体示例中(由实线表示),如果腔中的磁场强度为100 Oe以上,则最大能量乘积为比较例的90%以上。 实现。 另一方面,在第二具体示例中(由虚线表示),如果腔体中的磁场强度为大约400 Oe或更高,则最大能量乘积高达比较器的90%或更高。 例如,实现了。 然而,在第二示例中,当磁场强度低时,最大能量积很小。 这些结果表明,在粉末进料处理步骤中,粉末进料速率优选较低。 \n\n [0076] 即使在粉末进料速度高的第二具体示例中,也可以通过增加取向磁场的强度(例如达到400Oe(=约32kA / m)以上)来实现实用的磁性能。 然而,如果对准磁场强度过度增加,则所得压块的残余磁化强度将增加太多,从而引起类似于现有技术中观察到的问题。 为了将剩余磁化强度减小到这样的水平,在该水平下,磁体的磁化不会发生。 以这种方式,将空腔中的磁场强度控制在期望值。 压制机的模腔的开口(在上表面上)(即,模腔的横截面形状垂直于压制方向)是矩形(例如5 mm×20 mm),并且模腔具有 深度为40毫米。 \n\n [0077] 空腔中充满约10克(克)的化合物。 在这种空腔上形成的压块是长方体,尺寸为5毫米(长),20毫米(宽)和17毫米(高)。 \n\n [0078] 图。 图10示出了在腔中产生的弱磁场的强度(在腔的中心处测量)与所得各向异性粘结磁体的最大能量乘积之间的关系。 图。 图10提供了关于本发明的两个具体实例的数据,其中在互不相同的条件下进料粉末,以及关于各向异性粘结磁体的数据,该各向异性粘结磁体是通过常规方法制造的,其中在烧结过程中施加了12kOe的强磁场。 压实过程(作为比较例)。 \n\n [0079] 应当注意,作为图的横坐标的磁场强度以Oe(奥斯特)表示。 通过将该值乘以10,可以得出根据SI单位制的磁场强度 3 /(4π)。 自10 3 /(4π)大约等于80,根据SI,100 Oe约为8 kA / m \n\n 例子 \n\n 例子1 \n\n [0080] 在下文中,将描述本发明的具体示例。 \n\n [0081] 首先,在第一具体示例中,Nd-Fe-B基稀土合金的HDDR粉末,其包括27.5重量%的Nd,1.07重量%的B,14.7重量%的Co,0.2重量%的Cu,0.3 制备Ga的重量%,Zr和Fe的重量%为0.15重量%。 具体地,首先,将具有这种组成的稀土合金材料在Ar气氛中在1,130℃下热处理15小时,然后通过吸氢过程塌陷并过筛。 之后,对所得粉末进行HDDR处理,从而获得具有磁各向异性的HDDR粉末。 粉末的平均粒度(通过激光衍射分析测量)为约120μm。 \n\n [0082] 使用双轴捏合机将HDDR粉末与Bis-Phenol-A类环氧树脂的粘合剂(粘合剂树脂)混合,将其加热至60度,从而制备HDDR化合物。 粘合剂为全部混合物的约2.5重量%。 \n\n [0083] 该HDDR化合物用诸如图1和图2所示的压力机压缩和压实。 如图1和2所示。在这种情况下,位于模具左右两侧的永磁体具有相当大的磁性 2 通过改变程度(即0.005T或更小)来调节取向磁场强度,取向磁场强度优选不大于1,500Oe(即120kA / m)。 如果应进一步减小剩余磁化强度,则对准磁场强度更优选为1,260 Oe(即100 kA / m)或更低,甚至更优选为1,000 Oe(即80 kA / m)或更低,最优选为400 大江以下。 \n\n 例子2 \n\n [0084] 用诸如图1和2所示的压力机生产径向对准的环形各向异性粘结磁体。 参照图3和图4。也使用与上述第一具体实施例相同的化合物。 该压块的外径为25mm,内径为23mm,高度为5mm。 \n\n [0085] 图。 图11示出了在腔中产生的弱磁场的强度(在腔的中心处测量)与所得各向异性粘结磁体的磁通量(每单位重量)(在磁化处理步骤之后测量)之间的关系。 作为比较例,在比较例中还示出了各向异性粘结磁铁的磁通,该各向异性粘结磁铁的磁通被施加有常规的强磁场(例如强度为1200kA / m的脉冲磁场)压缩。  11。 \n\n [0086] 从图可以看出, 如图11所示,磁通量随着磁场强度的增加而增加,但是在大约400Oe至大约500Oe的磁场强度下饱和。 为了使剩余磁化最小化并获得实用的通量,优选地磁化磁性构件,使得腔体中的磁场强度变为约400Oe至约600Oe(=约32kA / m至约48kA / m)。 \n\n [0087] 如果腔体中的对准磁场强度高于1,000 Oe(即80 kA / m),则压制成型的压块(未经任何消磁处理)的表面通量密度(或剩磁)约为0.0010。 特斯拉至约0.0013特斯拉(即,约10高斯至约13高斯)。 另一方面,如果腔中的对准磁场强度为1,000Oe(即80kA / m)或更小,则剩磁小于0.0010特斯拉(即10高斯)。 并且如果腔中的对准磁场强度为约500Oe(即40kA / m),则剩磁为约0.0005特斯拉(即5高斯)。 \n\n [0088] 在该具体实例中,粉末通过图1所示的方法进料。  3.因此,没有粉末颗粒被磁性交联在一起。 而且,即使当产生具有相对较高强度的对准磁场时,粉末也可以快速装载。 \n\n 工业适用性 \n\n [0089] 根据本发明,弱取向磁场作为静磁场被施加到被供给的粉末上。 因此,被加载到腔中的磁性粉末可以与对准磁场的方向对准。 由于取向磁场的强度低,因此可以得到充分的取向度,但可以大幅度降低残留在压制体中的磁化强度。 结果,不再需要消磁过程。 因此,在避免了由于剩余磁化而引起的各种问题的同时,可以缩短压制过程的循环时间,并且可以以低成本制造具有优异性能的永磁体。 \n\n [0090] 而且,根据本发明,不再需要用于产生强的对准磁场的常规线圈,并且压力机可以具有减小的尺寸。 另外,可以节省已经由线圈耗散的用于产生对准磁场的功率,并且可以降低压制过程的成本。');
INSERT INTO `os_patent_instruction_text` VALUES (12974, 22803, 'TECHNICAL FIELD \n\n[0001]The present invention relates to a method for producing a permanent magnet and also relates to a press machine.\n\nBACKGROUND ART \n\n[0002]An R-Fe-B based rare-earth magnet (where R is one of the rare-earth elements including Y, Fe is iron, and B is boron) is a typical high-performance permanent magnet, has a structure including, as a main phase, an R 2 Fe 14 B phase, which is a tertiary tetragonal compound, and exhibits excellent magnet performance.\n\n[0003]Such R-Fe-B based rare-earth magnets are roughly classifiable into sintered magnets and bonded magnets. A sintered magnet is produced by compacting a fine powder of an R-Fe-B based magnet alloy (with a mean particle size of several µm) with a press machine and then sintering the resultant compact. On the other hand, a bonded magnet is produced by compacting a mixture (i.e., a compound) of a powder of an R-Fe-B based magnet alloy (with particle sizes of about 100 µm) and a binder resin within a press machine.\n\n[0004]The sintered magnet is made of a powder with relatively small particle sizes, and therefore, the respective powder particles thereof exhibit magnetic anisotropy. For that reason, an aligning magnetic field is applied to the powder being compacted by the press machine, thereby obtaining a compact in which the powder particles are aligned with the direction of the magnetic field.\n\n[0005]In the bonded magnet on the other hand, the powder particles used have particle sizes exceeding the single domain critical size, and normally exhibit no magnetic anisotropy and cannot be aligned under a magnetic field applied. Accordingly, to produce an anisotropic bonded magnet in which the powder particles are aligned with particular directions, a technique of making a magnetic powder, of which the respective powder particles exhibit the magnetic anisotropy, needs to be established.\n\n[0006]To make a rare-earth alloy powder for an anisotropic bonded magnet, an HDDR (hydrogenation-disproportionation-desorption-recombination) process is currently carried out. The \"HDDR\" process means a process in which the hydrogenation, disproportionation, desorption and recombination are carried out in this order. In this HDDR process, an ingot or a powder of an R-Fe-B based alloy is maintained at a temperature of 500 °C to 1,000 °C within an H 2  gas atmosphere or a mixture of an H 2  gas and an inert gas so as to occlude hydrogen. Thereafter, the hydrogenated ingot or powder is subjected to a desorption process at a temperature of 500 °C to 1,000 °C until a vacuum atmosphere with an H 2  partial pressure of 13 Pa or less or an inert atmosphere with an H 2  partial pressure of 13 Pa or less is created. Then, the desorbed ingot or powder is cooled, thereby obtaining an alloy magnet powder.\n\n[0007]An R-Fe-B based alloy powder, produced by such an HDDR process, exhibits huge coercivity and has magnetic anisotropy. The alloy powder has such properties because the metal structure thereof substantially becomes an aggregation of crystals with very small sizes of 0.1 µm to 1 µm. More specifically, the high coercivity is achieved because the grain sizes of the very small crystals, obtained by the HDDR process, are dose to the single domain critical size of a tetragonal R 2 Fe 14 B based compound. The aggregation of those very small crystals of the tetragonal R 2 Fe 14 B based compound will be referred to herein as a \"recrystallized texture\". Methods of making an R-Fe-B based alloy powder having the recrystallized texture by the HDDR process are disclosed in Japanese Patent Gazettes for Opposition Nos. 6-82575 and 7-68561, for example.\n\n[0008]However, if an anisotropic bonded magnet is produced with a magnetic powder prepared by the HDDR process (which will be referred to herein as an \"HDDR powder\"), then the following problems will arise.\n\n[0009]A compact, obtained by pressing a mixture (i.e., a compound) of the HDDR powder and a binder resin under an aligning magnetic field, has been strongly magnetized by the aligning magnetic field. If the compact remains magnetized, however, a magnet powder may be attracted toward the surface of the compact or the compacts may attract and contact with each other to be chipped, for example. In that case, it will be very troublesome to handle such compacts in subsequent manufacturing process steps. For that reason, before unloaded from the press machine, the compact needs to be demagnetized sufficiency. Accordingly, before the magnetized compact is unloaded from the press machine, a \"degaussing process\" of applying a degaussing field such as a demagnetizing field, of which the direction is opposite to that of the aligning magnetic field, or an alternating attenuating field to the compact needs to be carried out. However, such a degaussing process normally takes as long a time as several tens of seconds. Accordingly, in that case, the cycle time of the pressing process will be twice or more as long as a situation where no degaussing process is carried out (i.e., the cycle time of an isotropic bonded magnet). When the cycle time is extended in this manner, the mass productivity will decrease and the manufacturing cost of the magnet will increase unintentionally.\n\n[0010]As for a sintered magnet on the other hand, even if the compact thereof is not degaussed sufficiently, the compact remains magnetized just slightly, because its material magnet powder has low coercivity from the beginning. Also, in the sintering process step, the magnet powder is exposed to an elevated temperature that is higher than the Curie temperature thereof. Thus, the magnet powder will be completely degaussed before subjected to a magnetizing process step. In contrast, as for an anisotropic bonded magnet, if the compact thereof remains magnetized when unloaded from the press machine, then the magnetization will remain there until the magnetizing process step. And if the bonded magnet remains magnetized in the magnetizing process step, the magnet is very hard to magnetize due to the hysteresis characteristic of the magnet. US 2001/0018029 A1 discloses a magnetic powder feeding method for feeding a magnetic powder into a cavity of a press. The magnetic powder is compacted to form a magnet. EP 1 447 827 A1 discloses a permanent magnet.\n\n[0011]In order to overcome the problems described above, a main object of the present invention is to provide a method and a press machine for producing an easily magnetizable permanent magnet (e.g., an anisotropic bonded magnet among other things) at a reduced cost by avoiding the problems caused by the unwanted remanent magnetization of the compact.\n\n[0012]This object has been solved with the method according to claim 1. Preferred embodiments are given in the subclaims 2 to 11. The present invention furthermore provides a press machine as defined in claims 12 and 13.\n\nDISCLOSURE OF INVENTION \n\n[0013]A permanent magnet producing method according to the present invention is a method for producing a permanent magnet by feeding a magnetic powder into a cavity of a press machine and compacting the magnetic powder. The method includes the steps of: creating a weak magnetic field as defined in claim 1 as a static magnetic field in a space including the cavity and transporting the magnetic powder toward the inside of the cavity while aligning the magnetic powder parallel to the direction of the weak magnetic field; and compacting the magnetic powder inside of the cavity, thereby obtained a compacted magnetic powder.\n\n[0014]In a preferred embodiment, the weak magnetic field is created by using a magnetic member that is magnetized steadily.\n\n[0015]In another preferred embodiment, the weak magnetic field is also applied in the step of compacting the magnetic powder inside of the cavity.\n\n[0016]In another preferred embodiment, the weak magnetic field is adjusted such that the compact, which has just been pressed by the press machine, has a surface flux density of 0.005 tesla or less.\n\n[0017]According to the invention a weak magnetic field defines a magnetic field having a strength in the range of 8 kA/m to 120 kA/m inside of the cavity.\n\n[0018]The strength of the weak magnetic field is preferably adjusted so as to have an upper limit of 100 kA/m or less, more preferably 80 kA/m or less.\n\n[0019]In another preferred embodiment, after the magnetic powder has been compacted inside of the cavity, the compacted magnetic powder is unloaded from the cavity without being subjected to any degaussing process.\n\n[0020]In another preferred embodiment, the magnetic member is one of members that make up a die of the press machine.\n\n[0021]In another preferred embodiment, at least a portion of the magnetic member is a permanent magnet.\n\n[0022]In another preferred embodiment, at least a portion of the magnetic powder is an HDDR powder.\n\n[0023]In another preferred embodiment, the press machine includes: a die having a through hole; a core, which reciprocates inside of, and with respect to, the through hole; and a lower punch, which reciprocates between the inner surface of the through hole and the outer surface of the core and with respect to the die as defined in claim 12. The step of transporting the magnetic powder toward the inside of the cavity includes the steps of: positioning a feeder box, including the magnetic powder, over the through hole of the die after the through hole has been closed up with the lower punch; moving the core upward with respect to the die; and moving the die upward with respect to the core, thereby defining the cavity under the feeder box.\n\n[0024]A press machine according to the present invention includes: a die having a through hole; an upper punch and a lower punch, which are able to reciprocate inside of the through hole and with respect to the die; and a powder feeder for feeding a magnetic powder into a cavity that is defined inside of the through hole of the die. The press machine further includes members that have been magnetized for alignment purposes. The members are used to apply a weak magnetic field as defined in claim 12 as a static magnetic field to the magnetic powder being transported into the cavity.\n\n[0025]In a preferred embodiment, at least one of the members that have been magnetized for alignment purposes is a permanent magnet.\n\nBRIEF DESCRIPTION OF DRAWINGS \n\n[0026] FIGS. 1(a)  through 1(d)  are cross-sectional views showing how the main members of a press machine according to a preferred embodiment of the present invention operate in respective manufacturing process steps. FIG. 2  shows an arrangement in which a permanent magnet is used as a magnetic member for creating a weak aligning magnetic field. FIGS. 3(a)  through 3(d)  are cross-sectional views showing how the main members of a press machine according to a second specific preferred embodiment of the present invention operate in respective manufacturing process steps. FIG. 4  illustrates a configuration for the press machine for use in the second preferred embodiment of the present invention. FIG. 5  illustrates a thin-ring-shaped anisotropic bonded magnet obtained by the present invention. FIGS. 6(a)  through 6(e)  are cross-sectional views showing how the main members of a press machine according to another specific preferred embodiment of the present invention operate in respective manufacturing process steps. FIGS. 7(a)  through 7(e)  are cross-sectional views showing how the main members of a press machine according to yet another specific preferred embodiment of the present invention operate in respective manufacturing process steps. FIG. 8  illustrates a configuration for another press machine for use in the second preferred embodiment of the present invention. FIG. 9  illustrates a configuration for still another press machine for use in the second preferred embodiment of the present invention. FIG. 10  is a graph showing relationships between the strength of a weak magnetic field that has been created inside of a cavity and the maximum energy product (BH) max  of the resultant anisotropic bonded magnet. FIG. 11  is a graph showing a relationship between the strength of a weak magnetic field that has been created inside of a cavity and the flux per unit weight of the resultant anisotropic bonded magnet. \n\nBEST MODE FOR CARRYING OUT THE INVENTION \n\n[0027]The present inventors discovered that if a weak magnetic field as defined in claim 1 is applied as a static magnetic field to a magnetic powder being fed into the cavity of a press machine, a permanent magnet having a sufficiently high degree of alignment can be obtained without applying any strong aligning magnetic field thereto as in the conventional process. The present inventors obtained the basic idea of the present invention in this manner.\n\n[0028]According to the present invention, the strength of the magnetic field to be applied for alignment purposes is so weak that the remanent magnetization of the as-pressed compact can be reduced sufficiently. Thus, there is no need to perform any additional degaussing process thereon.\n\n[0029]It should be noted that a technique of aligning a magnetic powder effectively by applying an aligning magnetic field to the magnetic powder being transported (i.e., dropped) into a cavity is already described in Japanese Laid-Open Publications Nos. 2001-93712 and 2001-226701. In the present invention, however, a permanent magnet compaction process is carried out with a significantly smaller magnetic field than that disclosed in any of these publications, thereby reducing the surface flux density, resulting from the remanent magnetization of the compact, to 0.005 tesla or less without performing any degaussing process step. According to the present invention, no aligning magnetic field generator of a big size is needed anymore unlike the conventional process and the cycle time of the pressing process can be shortened significantly.\n\nEMBODIMENT 1 \n\n[0030]Hereinafter, a first specific preferred embodiment of the present invention will be described with reference to the accompanying drawings. In this preferred embodiment, an anisotropic bonded magnet is produced.\n\n[0031]FIGS. 1(a)  through 1(d)  show main process steps (i.e., from the process step of feeding a powder under an aligning magnetic field to the process step of compacting the powder) of a magnet producing method according to the present invention. The press machine 10  shown in FIG. 1  includes a die 2  having a through hole 1 , an upper punch 3  and a lower punch 4 , which are able to reciprocate inside of, and with respect to, the through hole 1 , and a powder feeder (e.g., feeder box) 6  for feeding a magnetic powder (i.e., a compound) 5  into a cavity that is defined inside of the through hole 1  of the die 2 .\n\n[0032]In this preferred embodiment, at least a portion of the magnetic member (made of a ferromagnetic material) used as the die 2  has been magnetized. Thus, a weak magnetic field can be applied as a static magnetic field to the magnetic powder 5  being transported into the cavity. The degree of magnetization is defined such that the strength of the weak magnetic field, created inside of the cavity, falls within the range of 8 kA/m to 120  kA/m (as measured at the center of the cavity). The magnetic member magnetized steadily forms a weak magnetic field as a static magnetic field (as identified by the reference sign \"M\" in FIG. 1 ) inside of the cavity, thereby appropriately aligning the compound being fed.\n\n[0033]The magnetic member for use to create the weak magnetic field as a static magnetic field is preferably provided near the cavity. However, its specific arrangement and configuration may be appropriately designed according to the desired magnetic field distribution. A die, provided for a normal press machine, includes a member (or a portion) that is made of a ferromagnetic material. Accordingly, if that member (or portion) is magnetized under a strong magnetic field, magnetization at a required level is achieved. The magnetic member may be magnetized either before the die is set in the press machine or after the die has already been set in the press machine. A conventional press machine for an anisotropic bonded magnet includes a coil for generating a strong aligning magnetic field to be applied after the powder has been fed. Thus, a portion of the die may also be magnetized with the strong magnetic field being created by this coil.\n\n[0034]It should be noted that instead of magnetizing a portion of the die 2 , a permanent magnet may be embedded in the die 2  or provided around the die 2 . FIGS. 2(a)  and 2(b)  show an example in which a pair of permanent magnets (e.g., rare-earth sintered magnets) 7  are arranged on right- and left-hand sides of the die 2 . In this example, an aligning magnetic field is created in the cavity space by the two permanent magnets 7 . In creating an aligning magnetic field by arranging the permanent magnets 7 , if the arrangement is modified by appropriately changing the number or the degree of magnetization of the permanent magnets used, then a novel aligning magnetic field distribution, which has been unachievable by any conventional method, can also be formed.\n\n[0035]Hereinafter, a method for producing an anisotropic bonded magnet with the machine shown in FIG. 1  will be described.\n\n[0036]First, a mixture (i.e., a compound) 5  of the HDDR powder described above and a binder (i.e., a binder resin) is prepared. The feeder box 6  is filled with this compound 5  and then transported to a position just over the cavity of the die 2  of the press machine as shown in FIGS. 1(a)  and 1(b) . Then, the compound 5  drops into the cavity and fills the cavity. While the cavity is being filled with the powder in this manner, the powder particles, included in the compound 5 , are effectively aligned under a weak magnetic field as a static magnetic field. This is believed to be because the respective powder particles being transported into the cavity can rotate relatively easily while dropping into the cavity.\n\n[0037]The present inventors discovered via experiments that the compound 5  being loaded into the cavity should be dropped into the cavity little by little in a relatively long time rather than in quantity at a time. The reason is believed to be as follows. Specifically, if the compound 5  is fed as relatively large chunks, then the free motion (e.g., rotation among other things) of the respective powder particles will be interfered with and the degree of alignment will decrease. In contrast, if the compound 5  is fed little by little, then the respective powder particles can rotate relatively freely and can be aligned smoothly even under a weak magnetic field.\n\n[0038]If a strong static magnetic field was applied from a conventional coil for applying an aligning magnetic field to the compound 5  being loaded into the cavity, then the powder particles would be cross-linked together in the direction of the aligning magnetic field between the inner walls of the cavity, thus clogging the cavity up partially. In that case, the cavity could not be filled with the powder uniformly. In contrast, if a relatively weak magnetic field is applied to the compound 5  as is done in this preferred embodiment, then the powder particles 5. are hardly cross-linked together magnetically.\n\n[0039]Next, after the feeder box 6  has been brought back from over the cavity to a retreated position as shown in FIG. 1(c) , the upper punch 3  is lowered as shown in FIG. 1(d) , thereby compressing the compound 5  in the cavity and obtaining a compact 7.\n\n[0040]In this preferred embodiment, the powder being fed is aligned under a magnetic field. Thus, even the relatively weak magnetic field of 8 kA/m to 120 kA/m can achieve a sufficiently high degree of alignment. Conversely, if the magnetic field applied is too strong (e.g., more than 800 kA/m as in the conventional aligning magnetic field), then the powder particles would be cross-linked together magnetically, thus interfering with smooth powder feeding unintentionally.\n\n[0041]According to this preferred embodiment, the magnetization of the as-pressed compact 7  (i.e., the remnant magnetization) can be reduced by at least one order of magnitude as compared with the conventional one. Thus, various operations that have been required in the conventional process step of aligning the loaded powder under a strong magnetic field (e.g., creating a very small space over the powder in the cavity to get the powder aligned more easily, aligning the powder in such a state, and immediately pressing and compressing the powder to obtain a compact) are not needed anymore. In addition, the compact 7  does not have to be subjected to any degaussing process, either. As a result, according to this preferred embodiment, the cycle time of the pressing process can be shortened to half or less of that of the conventional anisotropic bonded magnet (i.e., approximately equal to that of an isotropic magnet).\n\n[0042]Furthermore, according to this preferred embodiment, the aligning magnetic field is created by the weakly magnetized magnetic member. Thus, the aligning magnetic field is continuously applied not just during powder feeding but also compressing the compound 5  between the upper and lower punches 3  and 4 . As a result, the disturbed orientations, which are likely to occur during the compaction process, can be minimized.\n\nEMBODIMENT 2 \n\n[0043]Hereinafter, a second specific preferred embodiment of the present invention will be described with reference to FIGS. 3  through 7 . In this preferred embodiment, a radially aligned ring-shaped anisotropic bonded magnet is produced. Specifically, a substantially radially aligned, thin-ring-shaped anisotropic bonded magnet 11  such as that shown in FIG. 5  can be obtained by using the die 2  shown in FIGS. 4(a)  and 4(b) .\n\n[0044]The die 2  for use in this preferred embodiment is made of a ferromagnetic material and has a through hole at the center thereof as shown in FIG. 4 . A cylindrical core 8 , which is also made of a ferromagnetic material, is inserted into the center of the through hole. In this preferred embodiment, a permanent magnet 9 , magnetized in the direction in which the core 8  moves, is provided for the lower portion of the core 8 . Thus, the core 8  itself is also magnetized. The cavity is defined between the inner wall of the die through hole and the outer surface of the core 8 . A radially aligning magnetic field is created inside of the cavity by the core 8  and the die 2 .\n\n[0045]Hereinafter, it will be described with reference to FIG. 3  how the press machine of this preferred embodiment operates.\n\n[0046]First, as in the first preferred embodiment described above, a mixture (i.e., a compound) 5  of the HDDR powder and a binder (i.e., a binder resin) is prepared. The feeder box 6  is filled with this compound 5  and then transported to a position just over the die 2  of the press machine 10  as shown in FIG. 3(a) . More specifically, the feeder box 6  should be located over a portion of the die 2  where the cavity will be defined. In this preferred embodiment, the respective upper surfaces of the die 2 , lower punch 4  and core 8  are located at substantially equal levels at this point in time, and therefore, no cavity space has been defined yet.\n\n[0047]Next, as shown in FIG. 3(b) , the core 8  is moved upward with respect to the die 2  and the lower punch 4 . Thereafter, as shown in FIG. 3(c) , the die 2  is moved upward with respect to the core 8  and the lower punch 4 , thereby aligning the upper surface level of the die 2  with that of the core 8 . As a result of these operations, the cavity is defined and filled with the compound 5 .\n\n[0048]While the powder is being loaded into the cavity in this manner, the powder particles, included in the compound 5 , are radially aligned effectively under a weak magnetic field, which is created as a static magnetic field between the core 8  and the die 2  that have been magnetized by the permanent magnet 9  (see FIG. 4).\n\n[0049]According to this preferred embodiment, while the cavity is being filled with the compound 5 , no powder particles will be cross-linked together between the inner walls of the cavity and clog the cavity up partially. For that reason, the powder can be loaded more uniformly and more quickly than the first preferred embodiment described above. Thus, the method of this preferred embodiment is effectively applicable for use in a cavity that is normally hard to fill with the powder completely. Among other things, this method is particularly effective in producing a thin-ring-shaped anisotropic bonded magnet.\n\n[0050]Next, after the feeder box 6  has been brought back from over the cavity to a retreated position as shown in FIG. 3(d) , the upper punch (not shown) is lowered, thereby compressing the compound 5  in the cavity and obtaining a compact.\n\n[0051]In this preferred embodiment, the powder being fed is aligned under a magnetic field. Thus, even a weak magnetic field can achieve a sufficiently high degree of alignment. As a result, the magnetization of the as-pressed compact (i.e., the remnant magnetization) can be reduced by at least one order of magnitude as compared with the conventional one.\n\n[0052]Furthermore, according to this preferred embodiment, the aligning magnetic field is created by the weakly magnetized magnetic member as in the preferred embodiment described above. Thus, the aligning magnetic field is continuously applied not just during powder feeding but also compressing the compound 5 between the upper punch and the lower punch 4 .\n\n[0053]In the preferred embodiment described above, after the feeder box 6 has been transported to over a region where the cavity will be defined and before the cavity space is defined, the core is inserted into the feeder box. However, the present invention is not limited to such a powder feeding method. Alternatively, the cavity may be defined under the feeder box 6  and filled with the compound 5  at the same time by moving the core 8  and the die 2  upward with respect to the lower punch 4  as shown in FIGS. 6(a)  through 6(e) . As another alternative, the feeder box 6  may be transported to over a predefined cavity so as to allow the compound 5  to drop from the feeder box 6  into the cavity as shown in FIGS. 7(a)  through 7(e) .\n\n[0054]FIG. 8  shows a configuration for another press machine that may be used in this preferred embodiment. In the press machine having the configuration shown in FIG. 8 , a radially aligned ring-shaped permanent magnet 9  (that has been magnetized so as to have an S pole inside and an N pole outside in the example shown in FIG. 8 ) is provided on the inner walls of the through hole of the die 2 . A cavity is defined between the inner surface of this permanent magnet 9  and the outer surface of the core 8 . When the compound 5  that has been loaded into the cavity is compressed, a strong friction is caused by the compound 5 on the inner surface of the permanent magnet 9 . Thus, to prevent the permanent magnet 9  from being damaged, a thin film member is preferably provided between the inner surface of the permanent magnet 9  and the lower punch 4 .\n\n[0055]The thin film member may be made of either a non-magnetic material or a magnetic material and may be either a metal or a non-metal such as a ceramic.\n\n[0056]Even when the arrangement shown in FIG. 8  is adopted, the radial alignment is achieved as effectively as in the arrangement shown in FIG. 4 . Optionally, a press machine having both of the arrangements shown in FIGS. 4  and 8  may also be used. In that case, the two types of permanent magnets generate appropriate aligning magnetic field distributions and the radial alignment is achieved even more effectively.\n\n[0057]Also, in the arrangement shown in FIG. 8 , the radially aligned ring-shaped permanent magnet 9  is provided on the inner walls of the through hole of the die 2 . Alternatively, a radially aligned ring-shaped permanent magnet may be provided on the outer surface of the core 8  and a cavity may be defined between the outer surface of this ring-shaped permanent magnet and the inner walls of the through hole of the die 2 . As another alternative, these radially aligned ring-shaped permanent magnets may also be provided both on the inner walls of the through hole of the die 2  and on the outer surface of the core 8 . Even so, the desired radial alignment is also achievable.\n\n[0058]In the preferred embodiment described above, the radially aligned ring-shaped permanent magnet is magnetized such that the inner or outer surface thereof exhibits a single magnetic polarity (i.e., either N pole or S pole). Alternatively, a ring-shaped permanent magnet to be provided on the inner walls of a dice-shaped through hole may have multiple pairs of opposite magnetic poles that are arranged alternately along the inner surface thereof. When such a configuration is adopted, the resultant ring-shaped permanent magnet may be aligned so as to exhibit multipolar anisotropy on the outer surface thereof (see Japanese Laid-Open Publication No. 1-27208, for example). In the same way, a ring-shaped permanent magnet to be provided on the outer surface of a core may also have multiple pairs of opposite magnetic poles that are arranged alternately along the outer surface thereof. When such a configuration is adopted, the resultant ring-shaped permanent magnet may be aligned so as to exhibit multipolar anisotropy on the inner surface thereof. It should be noted that such a magnet with multipolar anisotropy does not have to be aligned by using the ring-shaped permanent magnet as an aligning magnet as described above. Alternatively, any other known arrangement may also be adopted as well. For example, a number of arched magnets may be arranged in a ring shape such that multiple pairs of opposite magnetic poles alternate one after another. Also, a groove to embed a coil for creating an aligning weak magnetic field may be defined on the inner walls of a dice-shaped through hole.\n\n[0059]In each of various preferred embodiments described above (including perpendicular alignment, radial alignment and multipolar alignment), the aligning magnetic field is applied horizontally, i.e., perpendicularly to the pressing direction (i.e., uniaxial compressing direction). Thus, the powder particles, filling the cavity, are aligned horizontally. Due to magnetic interactions, the powder particles are chained together horizontally. Powder particles, which are located on the upper surface of the loaded powder, are also chained together horizontally. As a result, the powder can be easily stored in the cavity completely without overflowing from the cavity.\n\n[0060]If the aligning magnetic field is applied parallel to the pressing direction, then the permanent magnet 9  may be provided under the lower punch 4  as shown in FIG. 9.  In such an arrangement, the magnetization can be stronger on the lower punch 4  than on the upper punch 3 . Thus, the compound 5  can be fed into the cavity smoothly.\n\n[0061]FIG. 9  shows a state in which the compound in the cavity, defined by the upper surface of the lower punch 4  (on which the permanent magnet 9  is provided) and the inner walls of the through hole of the die 2 , is being compressed by lowering the upper punch 3  after the compound has been fed into the cavity and aligned in the direction indicated by the arrow M.\n\n[0062]In the arrangement shown in FIG. 9 , the relative position of the permanent magnet 9  changes as the lower punch 4  goes up or down with respect to the die 2 . However, while the compound is being fed, the lower punch 4  does not move at all, and therefore, neither the direction nor the strength of the aligning magnetic field, existing in the cavity space that is defined by the upper surface of the lower punch 4  and the inner walls of the through hole of the die 2 , changes. As used herein, the \"static magnetic field\" refers to a magnetic field of which the direction and strength are kept substantially constant in a coordinate system that is defined by reference to the location of the cavity while the magnetic powder is being fed. Accordingly, even if the permanent magnet or the magnetic member, magnetized by the permanent magnet, moves due to the mechanical operation of the press machine, the aligning magnetic field, created in the cavity while the magnetic powder is being fed thereto, is still a \"static magnetic field\" as long as the direction and strength of the aligning magnetic field do not change with time but are substantially constant.\n\n[0063]It', '技术领域 \n\n [0001] 本发明涉及一种用于制造永磁体的方法,并且还涉及一种冲压机。 \n\n  背景技术 \n\n [0002] 基于R-Fe-B的稀土磁体(其中R是包括Y的稀土元素之一,Fe是铁,B是硼)是典型的高性能永磁体,其结构包括: 主相R 3 Fe 14 B相是叔四方化合物,具有出色的磁体性能。 \n\n [0003] 这种基于R-Fe-B的稀土磁体大致可分为烧结磁体和粘结磁体。 通过用压机将R-Fe-B基磁体合金的细粉(平均粒径为几微米)压实,然后烧结所得的压块,来制造烧结磁体。 另一方面,粘结磁铁是通过在压力机内将R-Fe-B基磁铁合金粉末(粒径约为100μm)和粘结剂树脂的混合物(即化合物)压实而成的。  。 \n\n [0004] 烧结磁体由具有较小粒径的粉末制成,因此,其各自的粉末颗粒表现出磁各向异性。 因此,通过压制机对被压实的粉末施加取向磁场,从而获得使粉末粒子沿磁场方向取向的压粉体。 \n\n [0005] 另一方面,在粘结磁体中,所使用的粉末颗粒具有超过单畴临界尺寸的粒径,并且通常不表现出磁各向异性并且在施加的磁场下不能取向。 因此,为了制造其中粉末颗粒沿特定方向排列的各向异性粘结磁体,需要建立一种制造磁性粉末的技术,该磁性粉末的各个粉末颗粒均表现出磁各向异性。 \n\n [0006] 为了制造用于各向异性粘结磁体的稀土合金粉末,目前正在进行HDDR(氢化-歧化-解吸-复合)工艺。  “ HDDR”过程是指以该顺序进行氢化,歧化,解吸和重组的过程。 在该HDDR工艺中,将R-Fe-B基合金的铸锭或粉末在H 2气体气氛或H 2气体与惰性气体的混合物中保持在500℃至1,000℃的温度下。 以便吸氢。 之后,将氢化的锭或粉末在500℃至1,000℃的温度下进行解吸处理,直到H 2分压为13Pa以下的真空气氛或H 2分压为15Pa的惰性气氛。 小于等于13 Pa。 然后,将解吸的锭或粉末冷却,从而获得合金磁体粉末。 \n\n [0007] 通过这种HDDR工艺生产的R-Fe-B基合金粉末表现出巨大的矫顽力并且具有磁各向异性。 合金粉末具有这样的性质,因为其金属结构基本上变成0.1的非常小的尺寸的晶体的聚集体。  μ m至1 µm。 更具体地,由于通过HDDR工艺获得的非常小的晶体的晶粒尺寸与基于四方R 2 Fe 14 B的化合物的单畴临界尺寸有关,因此实现了高矫顽力。 基于四方R 2 Fe 14 B的化合物的那些非常小的晶体的聚集体在本文中将被称为“重结晶织构”。 例如,在日本专利公报第6-82575号和第7-168561号中公开了通过HDDR工艺制造具有重结晶织构的R-Fe-B基合金粉末的方法。 \n\n [0008] 然而,如果用通过HDDR工艺制备的磁粉(在本文中称为“ HDDR粉”)生产各向异性粘结磁体,则将出现以下问题。 \n\n [0009] 通过在对准磁场下挤压HDDR粉末和粘合剂树脂的混合物(即化合物)而获得的压块已经通过对准磁场被强磁化。 然而,如果压块保持磁化,则磁体粉末可能被吸引向压块的表面,或者压块可能彼此吸引并接触而被切碎。 在那种情况下,在随后的制造工艺步骤中处理这种压块将是非常麻烦的。 因此,在将压坯从压力机上卸下之前,需要对其进行消磁。 因此,在从压机中取出磁化的压块之前,将“消磁过程”施加到磁场的方向与对准磁场的方向相反的消磁场,例如消磁场,或交变的衰减场。 紧凑需要进行。 然而,这种消磁过程通常花费长达数十秒的时间。 因此,在这种情况下,加压处理的循环时间将是不进行消磁处理的情况的两倍(即,各向同性粘结磁铁的循环时间)。 当以这种方式延长循环时间时,批量生产将降低并且磁体的制造成本将无意中增加。 \n\n [0010] 另一方面,对于烧结磁体,即使其压块没有被充分消磁,由于从一开始其材料磁体粉末的矫顽力就低,该压块仍保持略微磁化。 另外,在烧结工序中,使磁铁粉末暴露于比居里温度高的高温下。 因此,磁体粉末在经受磁化处理步骤之前将被完全消磁。 相反,对于各向异性粘结磁体,如果其压块在从压机中卸载时保持磁化,则磁化将保持在那里直到磁化处理步骤。 并且,如果粘结磁体在磁化处理步骤中保持磁化,则由于磁体的磁滞特性,磁体很难磁化。  US 2001/0018029 A1公开了一种用于将磁性粉末供给到压机的腔室中的磁性粉末供给方法。 将磁性粉末压实以形成磁体。  EP 1 447 827 A1公开了一种永磁体。 \n\n [0011] 为了克服上述问题,本发明的主要目的是提供一种通过避免上述问题而以降低的成本制造易于磁化的永磁体(例如,各向异性粘结磁体)的方法和压力机。 由压块的不需要的剩余磁化引起的问题。 \n\n [0012] 该目的已经通过根据权利要求1的方法解决。优选实施例在从属权利要求2至11中给出。本发明还提供了一种如权利要求12和13所限定的压力机。 \n\n  发明内容 \n\n [0013] 根据本发明的永磁体制造方法是通过将磁性粉末供给到压制机的腔中并压实磁性粉末来制造永磁体的方法。 该方法包括以下步骤:在包括腔的空间中产生如权利要求1所述的弱磁场作为静磁场,并且在使所述磁粉平行于所述腔的方向对准的同时,将所述磁粉向所述腔的内部输送。 弱磁场 然后在腔体内压实磁粉,从而获得压实的磁粉。 \n\n [0014] 在一个优选实施例中,通过使用被稳定地磁化的磁性构件来产生弱磁场。 \n\n [0015] 在另一个优选实施例中,在压实空腔内部的磁粉的步骤中还施加了弱磁场。 \n\n [0016] 在另一个优选实施例中,调节弱磁场,使得刚由压机压制的压块的表面通量密度为0.005特斯拉或更小。 \n\n [0017] 根据本发明,弱磁场限定了在腔室内具有在8kA / m至120kA / m的范围内的强度的磁场。 \n\n [0018] 弱磁场的强度优选被调整为上限为100kA / m以下,更优选为80kA / m以下。 \n\n [0019] 在另一个优选的实施方案中,在将磁粉压实在腔体内之后,将压实的磁粉从腔中卸载而不经过任何消磁过程。 \n\n [0020] 在另一个优选实施例中,磁性构件是构成压力机的模具的构件之一。 \n\n [0021] 在另一个优选实施例中,磁性构件的至少一部分是永磁体。 \n\n [0022] 在另一个优选的实施方案中,至少一部分磁性粉末是HDDR粉末。 \n\n [0023] 在另一个优选实施例中,压机包括:具有通孔的模具; 芯,该芯在通孔内并相对于通孔往复运动;  13.一种下冲头,其在通孔的内表面和型芯的外表面之间并且相对于如权利要求12所限定的模具往复运动。将磁性粉末朝着腔体内输送的步骤包括以下步骤: 包括:在用下冲头将通孔封闭后,将包括磁性粉末的进料箱放置在模具的通孔上; 使型芯相对于模具向上移动; 相对于芯向上移动模具,从而在进料箱下方限定腔。 \n\n [0024] 根据本发明的压力机包括:具有通孔的模具; 上冲头和下冲头,它们能够在通孔内部相对于模具往复运动; 粉末进料器,用于将磁性粉末进料到在模具的通孔内部限定的腔中。 压机还包括已被磁化以用于对准目的的构件。 这些构件用于将权利要求12中所定义的弱磁场作为静态磁场施加到被输送到腔体中的磁性粉末。 \n\n [0025] 在一优选实施例中,已被磁化以用于对准目的的构件中的至少一个是永磁体。 \n\n  附图说明 \n\n [0026]  无花果 1(a)  通过 1(d)  图3是示出根据本发明的优选实施例的压力机的主要构件如何在各个制造工艺步骤中操作的截面图。 图。 2  图1示出了一种布置,其中将永磁体用作用于产生弱对准磁场的磁性构件。 无花果 3(a)  通过 3(d)  图6是示出根据本发明的第二特定优选实施例的压力机的主要构件如何在各个制造工艺步骤中操作的截面图。 图。 4  图1示出了用于本发明第二优选实施例的压机的结构。 图。 5  图1示出了通过本发明获得的薄环形状的各向异性粘结磁体。 无花果 6(a)  通过 6(e)  图6是示出根据本发明的另一特定优选实施例的压力机的主要构件如何在各个制造工艺步骤中操作的截面图。 无花果 7(a)  通过 7(e)  图5是示出根据本发明的又一特定优选实施例的压力机的主要构件如何在各个制造工艺步骤中操作的截面图。 图。 8  图1示出了用于本发明第二优选实施例的另一压力机的结构。 图。 9  图1是用于本发明第二优选实施例的又一压机的结构图。 图。 10  图6是表示在腔体内产生的弱磁场的强度与所得到的各向异性粘结磁体的最大能量乘积(BH)max之间的关系的曲线图。 图。 11  图6是表示在腔体内产生的弱磁场的强度与所得到的各向异性粘结磁体的每单位重量的磁通之间的关系的曲线图。 \n\n  实施本发明的最佳模式 \n\n [0027] 本发明人发现,如果将如权利要求1所限定的弱磁场作为静磁场施加到被馈送到压制机的腔体中的磁粉,则可以得到具有足够高的对准度的永磁体而无需 如常规方法那样,向其施加任何强对准磁场。 本发明人以这种方式获得了本发明的基本思想。 \n\n [0028] 根据本发明,为了对准的目的而施加的磁场强度是如此之弱,以至于压制后的压块的剩余磁化强度可被充分降低。 因此,不需要在其上执行任何附加的消磁处理。 \n\n [0029] 应当注意,在日本特开2001-93712和2001-2001中已经描述了通过将对准磁场施加到正被传送(即下落)到腔中的磁粉来有效地对准磁粉的技术。  226701。 然而,在本发明中,以比这些出版物中的任何一种所公开的磁场都要小得多的磁场来进行永磁体的压紧工艺,从而将由压块的剩余磁化引起的表面通量密度减小到0.005特斯拉或 无需执行任何消磁处理步骤就更少了。 根据本发明,与常规方法不同,不再需要大尺寸的对准磁场发生器,并且可以显着缩短压制过程的周期时间。 \n\n  实施例1 \n\n [0030] 在下文中,将参考附图描述本发明的第一特定优选实施例。 在该优选实施例中,生产各向异性粘结磁体。 \n\n [0031] 无花果 1(a)  通过 1(d)  图1示出了根据本发明的磁体制造方法的主要工艺步骤(即,从在对准磁场下供给粉末的工艺步骤到压实粉末的工艺步骤)。 压机 10  如图所示。 1  包括死 2  有通孔 1  一拳 3  和一个较低的拳 4  ,它们能够在通孔内并相对于通孔往复运动 1  ,以及供粉器(例如供纸盒) 6  用于喂入磁性粉末(即化合物) 5  进入通孔内部定义的空腔中 1  死的 2  。 \n\n [0032] 在该优选实施例中,用作模具的磁性部件(由铁磁性材料制成)的至少一部分 2  已被磁化。 因此,可以将弱磁场作为静磁场施加于磁粉。 5  被运送到空腔中。 定义磁化强度,以使在腔体内产生的弱磁场强度落在8 kA / m至 120  kA / m(在型腔中心测得)。 被磁化的磁性部件稳定地形成弱磁场作为静磁场(如图2中的附图标记“ M”所示)。 1  )放入腔体内部,从而使进料的化合物适当对齐。 \n\n [0033] 优选在腔室附近设置用于产生弱磁场作为静磁场的磁性部件。 然而,可以根据期望的磁场分布适当地设计其特定的布置和构造。 为普通压力机提供的模具包括由铁磁材料制成的构件(或一部分)。 因此,如果该构件(或部分)在强磁场下被磁化,则达到所需水平的磁化。 可以在将模具放置在压力机中之前或在将模具放置在压力机中之后将磁性部件磁化。 用于各向异性粘结磁体的常规压力机包括线圈,该线圈用于产生强取向磁场,该磁场将在进给粉末之后施加。 因此,通过该线圈产生的强磁场也可以使模具的一部分磁化。 \n\n [0034] 应该注意的是,代替磁化模具的一部分 2 ,可以将永久磁铁嵌入模具中 2  或提供在模具周围 2  。 无花果 2(a)  和 2(b)  显示了一个示例,其中一对永磁体(例如,稀土烧结磁体) 7  排列在模具的左右两侧 2  。 在此示例中,两个永磁体在型腔空间中产生了对齐磁场 7  。 通过排列永磁体产生对准磁场 7  如果通过适当地改变所使用的永磁体的数量或磁化程度来改变布置,则还可以形成任何常规方法都无法实现的新颖的对准磁场分布。 \n\n [0035] 以下,使用图1所示的机器制造各向异性粘结磁铁的方法如下。 1  将进行描述。 \n\n [0036] 首先,是混合物(即化合物) 5  制备上述HDDR粉末和粘合剂(即,粘合剂树脂)。 接驳箱 6  充满了这种化合物 5  然后运输到模具腔上方的位置 2  如图1和2所示的压力机的结构。 1(a)  和 1(b)  。 然后,化合物 5  掉进空腔并充满空腔。 当腔体以这种方式填充粉末时,化合物中包含的粉末颗粒 5  在弱磁场下作为静态磁场有效地对准。 认为这是因为被输送到空腔中的各个粉末颗粒在落入空腔中时可以相对容易地旋转。 \n\n [0037] 本发明人通过实验发现该化合物 5  被加载到空腔中的物体应该在相对较长的时间内一点一点地掉入空腔中,而不是一次大量地掉入。 认为原因如下。 具体来说,如果 5  当以相对较大的块进料时,相应粉末颗粒的自由运动(例如,旋转等)将受到干扰,并且排列程度将降低。 相反,如果复合 5  如果一点一点地加料,则各个粉末颗粒即使在弱磁场下也可以相对自由地旋转并且可以平滑地取向。 \n\n [0038] 如果从常规线圈施加了强大的静磁场以向化合物施加对准磁场 5  当将粉末颗粒装载到空腔中时,粉末颗粒将在空腔内壁之间的对齐磁场方向上交联在一起,从而部分堵塞空腔。 在这种情况下,空腔不能均匀地填充粉末。 相反,如果对化合物施加相对弱的磁场 5  如在该优选实施方案中所做的那样,那么粉末颗粒5几乎没有磁性交联在一起。 \n\n [0039] 接下来,进纸匣之后 6  如图2所示,从腔上方移回的腔体已回到缩回位置。 1(c)  ,上拳 3  如图3所示降低。 1(d)  ,从而压缩复合物 5  在型腔中并获得紧凑型7。 \n\n [0040] 在该优选实施例中,被供给的粉末在磁场下对准。 因此,即使8kA / m至120kA / m的相对弱的磁场也可以实现足够高的对准度。 相反,如果所施加的磁场太强(例如,如常规对准磁场中那样大于800kA / m),则粉末颗粒将磁性交联在一起,从而无意中干扰了平滑的粉末进料。 \n\n [0041] 根据该优选实施例,被压制的压块的磁化 7 与常规磁化强度相比,磁化强度(即剩余磁化强度)可以减小至少一个数量级。 因此,在传统的处理步骤中,需要在强磁场下对准装入的粉末(例如,在腔体中的粉末上创建很小的空间以使粉末更容易对准,在这种情况下将粉末对准)的常规处理步骤中需要进行各种操作。 在这种状态下,不再需要立即压制和压缩粉末以获得压块。 另外,紧凑 7  也不必进行任何消磁处理。 结果,根据该优选实施例,压制过程的周期时间可以缩短到传统各向异性粘结磁体的周期的一半或更短(即,大约等于各向同性磁体的周期)。 \n\n [0042] 此外,根据该优选实施例,由弱磁化的磁性构件产生对准磁场。 因此,不仅在送粉过程中连续施加取向磁场,而且还压缩化合物 5  上下冲头之间 3  和 4  。 结果,可以最小化在压实过程中可能发生的扰动取向。 \n\n  实施例2 \n\n [0043] 在下文中,将参照图1至图6描述本发明的第二特定优选实施例。 3  通过 7  。 在该优选实施例中,产生了径向对准的环形各向异性粘结磁体。 具体地,基本上径向对准的薄环形状的各向异性粘结磁体 11  如图2所示。 5  可以通过使用模具获得 2  如图所示。 4(a)  和 4(b)  。 \n\n [0044] 死 2  如图1所示,在本优选实施例中使用的“铁”由铁磁性材料制成,并且在其中心具有通孔。 4  。 圆柱芯 8  也是由铁磁材料制成的,被插入通孔的中心。 在该优选实施例中,永磁体 9  ,在磁芯的方向上被磁化 8  移动,提供给核心的下部 8  。 因此,核心 8  本身也被磁化。 该空腔被限定在芯片通孔的内壁和芯的外表面之间。 8  。 磁芯在空腔内部产生径向对齐的磁场 8  和死 2  。 \n\n [0045] 在下文中,将参考图2进行描述。 3  该优选实施例的压力机如何运行。 \n\n [0046] 首先,如上述第一优选实施例中那样,混合物(即化合物) 5  制备HDDR粉末和粘合剂(即,粘合剂树脂)。 接驳箱 6  充满了这种化合物 5  然后运到模具上方的位置 2  压机的 10  如图 3(a)  。 更具体地说,进纸器盒 6  应该位于模具的一部分上 2  将在其中定义空腔的位置。 在该优选实施例中,模具的各个上表面 2  下冲头 4  和核心 8  在这个时间点,它们的位置基本相等,因此,尚未定义空腔空间。 \n\n [0047] 接下来,如图2所示,将其设置为0。 3(b)  , 核心 8  相对于模具向上移动 2  和下拳 4  。 此后,如图2所示, 3(c)  ,死 2  相对于核心向上移动 8  和下拳 4  ,从而对齐模具的上表面水平 2  与核心 8  。 这些操作的结果是,定义了空腔并填充了化合物 5  。 \n\n [0048] 当粉末以这种方式被加载到空腔中时,包含在混合物中的粉末颗粒 5  ,在纤芯之间作为静磁场产生的弱磁场下有效地径向对齐 8  和死 2  被永久磁铁磁化的 9  (见图4)。 \n\n [0049] 根据该优选实施例,当空腔填充有化合物时 5  ,没有粉末颗粒将在型腔的内壁之间交联在一起,并且不会部分堵塞型腔。 因此,与上述第一实施方式相比,能够更均匀且更快地装载粉末。 因此,该优选实施例的方法可有效地用于通常难以完全填充粉末的空腔中。 其中,该方法在制造薄环形状的各向异性粘结磁体方面特别有效。 \n\n [0050] 接下来,进纸匣之后 6  如图2所示,从腔上方移回的腔体已回到缩回位置。 3(d)  ,降低上冲头(未显示),从而压缩混合物 5  在型腔中并获得压实。 \n\n [0051] 在该优选实施例中,被供给的粉末在磁场下对准。 因此,即使是弱磁场也可以实现足够高的对准度。 结果,与传统的压坯相比,压制后的压坯的磁化强度(即残余磁化强度)可减小至少一个数量级。 \n\n [0052] 此外,根据该优选实施例,如上述优选实施例那样,由弱磁化的磁性部件产生对准磁场。 因此,不仅在送粉期间连续施加对准磁场,而且还在上冲头和下冲头之间压缩化合物5。 4  。 \n\n [0053] 在上述的优选实施例中,在将送料箱6运输到将要限定空腔的区域上之后,在限定空腔之前,将芯插入到送料箱中。 然而,本发明不限于这种粉末进料方法。 可替代地,可以在进料箱下方限定腔体 6  并充满了化合物 5  同时移动核心 8  和死 2  相对于下冲头向上 4  如图所示。 6(a)  通过 6(e)  。 另一种选择是供纸盒 6  可以将其运输到预定的腔体上,以使化合物 5  从进纸器箱掉落 6  进入腔中,如图1和2所示。 7(a)  通过 7(e)  。 \n\n [0054] 图。 8  图1示出了可以在该优选实施例中使用的另一压力机的构造。 在具有图1所示的构造的压机中, 8  径向对齐的环形永磁体 9  (在图1所示的例子中,磁化后的内部为S极,外部为N极。 8  )设置在模具通孔的内壁上 2  。 在此永磁体的内表面之间定义了一个空腔 9  和核心的外表面 8  。 当复合 5  加载到空腔中的金属被压缩时,永磁体内表面上的化合物5引起强烈的摩擦 9  。 因此,防止永磁体 9  为了防止损坏,优选在永久磁铁的内表面之间设置薄膜构件。 9  和下拳 4  。 \n\n [0055] 薄膜构件可以由非磁性材料或磁性材料制成,并且可以是金属或诸如陶瓷的非金属。 \n\n [0056] 即使当图1所示的布置 8  通过采用图3所示的布置,可以有效地实现径向对准。 4  。 可选地,具有图1和图2中所示的两种布置的压力机可以包括: 4  和 8  也可以使用。 在那种情况下,两种类型的永磁体产生适当的对准磁场分布,并且甚至更有效地实现了径向对准。 \n\n [0057] 同样,在图1所示的布置中, 8  ,径向对齐的环形永磁体 9  设置在模具通孔的内壁上 2 。 可替代地,可以在芯的外表面上设置径向对准的环形永磁体。 8  在该环状永磁体的外表面与模具的通孔的内壁之间可以形成空腔。 2  。 作为另一种选择,这些径向对准的环形永磁体也可以同时设置在模具的通孔的内壁上。 2  并且在芯的外表面上 8  。 即使这样,也可以实现期望的径向对准。 \n\n [0058] 在上述优选实施例中,径向对齐的环形永磁体被磁化,使得其内表面或外表面呈现出单一的磁极性(即,N极或S极)。 可替代地,设置在骰子形通孔的内壁上的环形永磁体可以具有多对相反的磁极,其沿其内表面交替布置。 当采用这种构造时,可以将所得的环状永磁体排列成在其外表面上表现出多极各向异性(例如,参见日本特开平1-27208号公报)。 同样,设置在芯的外表面上的环形永磁体也可以具有沿其外表面交替布置的多对相反的磁极。 当采用这种构造时,可以将所得的环状永磁体排列成在其内表面上表现出多极各向异性。 应当注意,如上所述,这种具有多极各向异性的磁体不必通过使用环形永磁体作为对准磁体来对准。 替代地,也可以采用任何其他已知的布置。 例如,可以将多个拱形磁体布置成环形,使得多对相反的磁极彼此交替。 另外,可以在骰子形通孔的内壁上限定用于嵌入线圈以产生对准弱磁场的凹槽。 \n\n [0059] 在上述各种优选实施例中的每一个中(包括垂直对准,径向对准和多极对准),对准磁场是水平地,即垂直于挤压方向(即单轴压缩方向)施加的。 因此,填充空腔的粉末颗粒水平对准。 由于磁性相互作用,粉末颗粒水平链接在一起。 位于负载粉末上表面的粉末颗粒也水平链接在一起。 结果,粉末可以容易地完全存储在腔中而不会从腔中溢出。 \n\n [0060] 如果平行于挤压方向施加对准磁场,则永磁体 9  可以在下冲头下方提供 4  如图 9.  在这种布置中,下冲头的磁化强度可能更高 4  比上一拳 3  。 因此, 5  可以顺利地送入型腔。 \n\n [0061] 图。 9  显示了一种状态,其中模腔中的化合物由下冲头的上表面定义 4  (在其上的永磁体 9  提供)和模具通孔的内壁 2  ,通过降低上冲头被压缩 3  将化合物送入型腔并沿箭头M所示的方向对齐之后。 \n\n [0062] 在图1所示的布置中, 9  ,永磁体的相对位置 9  随下拳而改变 4  相对于模具上升或下降 2  。 但是,在进料时,下冲头 4  根本不移动,因此,由下冲头的上表面限定的空腔中存在的对准磁场的方向和强度都不存在 4  和模具通孔的内壁 2 , 变化。 如本文中所使用的,“静磁场”是指其磁场和方向在坐标系统中保持基本恒定的磁场,该坐标系统通过在馈送磁性粉末时参考腔的位置来限定。 因此,即使永磁体或被永磁体磁化的磁性构件由于压力机的机械操作而移动,在向腔体中馈送磁性粉末时在腔体中产生的对准磁场仍然是磁场。 只要对准磁场的方向和强度不随时间变化而是基本恒定,则“静磁场”。 \n\n [0063] 应当注意,压制机的腔的中心轴线可以相对于垂直方向限定倾斜角。 而且,对准磁场的方向还可相对于水平方向限定一些倾斜角。 根据确切地应将永磁体形成为什么形状来适当地确定这些布置。 \n\n [0064] 在上述各种优选实施例的每一个中,使用已经沿预定方向磁化的永磁体。 但是,即使用线圈代替永磁体进行磁化,也可以获得类似的效果。 或者,不仅可以施加由被永磁体磁化的构件产生的弱取向磁场,而且还可以施加由线圈产生的磁场。 即使当使用这种附加磁场(在本文中将其称为“辅助磁场”)时,腔中的对准磁场也具有8 kA / m至120 kA / m的强度,从而使得 压块的残余磁化强度低至0.005 T或更低。 也就是说,优选地根据期望的压块的形状和尺寸,磁性粉末的磁性,对准方向以及在磁性粉末进给过程中的粉末进给速度来优化腔中的对准磁场强度。 步。 为了实现完全对准,对准磁场优选具有高强度。 但是,从下面的具体示例的描述中可以清楚地看出,一旦对准磁场强度达到预定强度,就不再需要增加强度,因为在这种情况下,其作用已经饱和并且压块的剩余磁化强度刚刚增加。  。 本发明人通过实验发现并证实,磁场应具有至少8kA / m的强度以实现期望的对准。 考虑到剩余磁化强度,其上限被定义为120kA / m。 取向磁场的上限更优选为100kA / m,进一步优选为80kA / m。 应当注意,辅助磁场不必一定是静磁场,而也可以是诸如交变磁场或脉冲磁场之类的振荡磁场。 \n\n  例子 \n\n (示例1) \n\n [0065] 在下文中,将描述本发明的具体示例。 \n\n [0066] 首先,在第一个具体实例中,Nd-Fe-B基稀土合金的HDDR粉末,其包括27.5重量%的Nd,1.07重量%的B,14.7重量%的Co,0.2重量%的Cu,0.3 制备Ga的重量%,Zr和Fe的重量%为0.15重量%。 具体地,首先,将具有这种组成的稀土合金材料在Ar气氛中在1,130℃下热处理15小时,然后通过吸氢过程塌陷并过筛。 之后,对所得粉末进行HDDR处理,从而获得具有磁各向异性的HDDR粉末。 粉末的平均粒径(通过激光衍射分析测量)为约120μm。 \n\n [0067] 使用双轴捏合机将HDDR粉末与Bis-Phenol-A类环氧树脂的粘合剂(粘合剂树脂)混合,将其加热至60度,从而制备HDDR化合物。 粘合剂为全部混合物的约2.5重量%。 \n\n [0068] 该HDDR化合物用诸如图1和图2所示的压力机压缩和压实。 1  和 2 。 在这种情况下,设置在模具右侧和左侧的永磁体的基本磁性能 2  通过改变磁体的磁化程度来调节。 以这种方式,将空腔中的磁场强度控制在期望值。 压制机的模腔的开口(在上表面上)(即,模腔的垂直于压制方向的横截面形状)为矩形(例如5 mi×20 mm),并且模腔具有 深度为40毫米。 \n\n [0069] 空腔中充满约10克(克)的化合物。 在这种空腔上形成的压块是长方体,尺寸为5mm。(长),20mm(宽)和17mm(高)。 \n\n [0070] 图。 图10示出了在腔中产生的弱磁场的强度(在腔的中心处测量)与所得各向异性粘结磁体的最大能量乘积之间的关系。 图。 10  提供了有关在互不相同的条件下进料粉末的本发明的两个具体实例的数据,以及有关通过常规方法生产的各向异性粘结磁体的数据,其中在压实过程中施加了12 kOe的强磁场 处理(作为比较示例)。 \n\n [0071] 应当注意,作为图的横坐标的磁场强度以Oe(奥斯特)表示。 通过将该值乘以10 3可以得到根据SI单位制的磁场强度。 [0072] 在第一特定示例中,在粉末进给处理步骤期间的粉末进给速率保持较低,但是在第二特定示例中被定义为尽可能高。 从图可以看出, 10  ,在第一个具体实例中(由实曲线表示),如果腔中的磁场强度为100 Oe或更高,则可以获得最大能量乘积,其高达比较例的90%或更高。  。 另一方面,在第二具体示例中(由虚线表示),如果腔体中的磁场强度为大约400 Oe或更高,则最大能量乘积高达比较器的90%或更高。 例如,实现了。 然而,在第二示例中,当磁场强度低时,最大能量积很小。 这些结果表明,在粉末进料处理步骤中,粉末进料速率优选较低。 \n\n [0073] 即使在粉末进料速度高的第二具体示例中,也通过增加对准磁场的强度(例如达到400Oe(=约32kA / m)或更高)来实现实用的磁性能。 然而,如果对准磁场强度过度增加,则所得压块的剩余磁化强度将增加太多,从而引起类似于现有技术中观察到的问题。 为了将剩余磁化强度减小到不应该出现这种问题的水平(即0.005T或更小),取向磁场强度优选不大于1,500Oe(即120kA / m)。 如果应进一步减小剩余磁化强度,则对准磁场强度更优选为1,260 Oe(即100 kA / m)或更低,甚至更优选为1,000 Oe(即80 kA / m)或更低,最优选为400 大江以下。 \n\n (示例2) \n\n [0074] 用诸如图1和图2所示的压力机生产径向对准的环形各向异性粘结磁体。 3  和 4  。 还使用了与上述第一具体实例中使用的化合物相同的化合物。 该压块的外径为25mm,内径为23mm,高度为5mm。 \n\n [0075] 图。 11 图1示出了在腔中产生的弱磁场的强度(在腔的中心处测量)与所得各向异性粘结磁体的磁通量(每单位重量)(在磁化步骤之后测量)之间的关系。 作为比较例,在比较例中还示出了各向异性粘结磁铁的磁通,该各向异性粘结磁铁的磁通被施加有常规的强磁场(例如强度为1200kA / m的脉冲磁场)压缩。  11。 \n\n [0076] 从图可以看出, 11  ,通量随着磁场强度的增加而增加,但是在大约400Oe至大约500Oe的场强度下饱和。 为了使剩余磁化最小化并获得实用的通量,优选地磁化磁性构件,使得腔体中的磁场强度变为约400Oe至约600Oe(=约32kA / m至约48kA / m)。 \n\n [0077] 如果腔体中的对准磁场强度高于1,000 Oe(即80 kA / m),则压制成型的压块(未经任何消磁处理)的表面通量密度(或剩磁)约为0.0010。 特斯拉至约0.0013特斯拉(即,约10高斯至约13高斯)。 另一方面,如果腔中的对准磁场强度为1,000Oe(即80kA / m)或更小,则剩磁小于0.0010特斯拉(即10高斯)。 并且如果腔中的对准磁场强度为约500Oe(即40kA / m),则剩磁为约0.0005特斯拉(即5高斯)。 \n\n [0078] 在该具体实例中,粉末通过图1所示的方法进料。 3  。 因此,没有粉末颗粒磁性交联在一起。 而且,即使当产生具有相对较高强度的对准磁场时,粉末也可以快速装载。 \n\n  工业适用性  \n\n [0079] 根据本发明,弱取向磁场作为静磁场被施加到被供给的粉末上。 因此,被加载到腔中的磁性粉末可以与对准磁场的方向对准。 由于取向磁场的强度低,因此可以得到充分的取向度,但可以大幅度降低残留在压制体中的磁化强度。 结果,不再需要消磁过程。 因此,在避免了由于剩余磁化而引起的各种问题的同时,可以缩短压制过程的周期时间,并且可以以低成本制造具有优异性能的永磁体。 \n\n [0080] 而且,根据本发明,不再需要用于产生强的对准磁场的常规线圈,并且压力机可以具有减小的尺寸。 另外,可以节省已经由线圈耗散的用于产生对准磁场的功率,并且可以降低压制过程的成本。');
INSERT INTO `os_patent_instruction_text` VALUES (12975, 22804, '【0001】\n\n【発明の属する技術分野】\n\n本発明は、希土類-鉄-硼素系合金、磁気異方性永久磁石粉末およびその製造方法、ならびに、当該磁気異方性永久磁石粉末を用いた異方性ボンド磁石およびその製造方法に関する。\n\n【0002】\n\n【従来の技術】\n\n高性能永久磁石として代表的な希土類-鉄-硼素系希土類磁石は、三元系正方晶化合物であるR2Fe14B型結晶相を主相として含む組織を有し、優れた磁石特性を発揮する。ここで、Rは希土類元素およびイットリウムからなる群から選択された少なくとも1種の元素であり、FeやBの一部は他の元素によって置換されていても良い。\n\n【0003】\n\nこのような希土類-鉄-硼素系希土類磁石は、焼結磁石とボンド磁石とに大別される。焼結磁石は、希土類-鉄-硼素系磁石合金の微粉末(平均粒径:数μm)をプレス装置で圧縮成形した後、焼結することによって製造される。これに対して、ボンド磁石は、通常、希土類-鉄-硼素系磁石合金の粉末(粒径:例えば100μm程度)と結合樹脂との混合物(コンパウンド)をプレス装置内で圧縮成形することによって製造される。\n\n【0004】\n\n焼結磁石の場合、比較的粒径の小さい粉末を用いるため、個々の粉末粒子が磁気的異方性を有している。このため、プレス装置で粉末の圧縮成形を行うとき、粉末に対して配向磁界を印加し、それによって、粉末粒子が磁界の向きに配向した成形体を作製することができる。\n\n【0005】\n\n一方、ボンド磁石の場合は、用いる粉末粒子の粒径が結晶粒径を超えた大きさを持つため、通常、磁気的異方性を示すことがなく、各粉末粒子を磁界で配向させることはできなかった。従って、粉末粒子が特定方向に配向した異方性ボンド磁石を作製するには、個々の粉末粒子が磁気的異方性を示す磁性粉末を作製する技術を確立する必要がある。\n\n【0006】\n\n異方性ボンド磁石用の希土類合金粉末を製造するため、現在、HDDR(Hydrogenation-Disproportionation-Desorption-Recombination)処理が検討されている。「HDDR」は、水素化(Hydrogenation)、不均化(Disproportionation)、脱水素化(Desorption)、および再結合(Recombination)を順次実行するプロセスを意味している。このHDDR処理によれば、まず、希土類-鉄-硼素系合金(母合金)の鋳片または粉末をH2ガス雰囲気またはH2ガスと不活性ガスとの混合雰囲気中で温度500℃〜1000℃に保持し、それによって、上記合金中に水素を吸蔵させる。この水素吸蔵により、R2Fe14B相は希土類の水素化物や鉄基硼化物などに分解する。その反応式は、以下の通りである。\n\n【0007】\n\nR2Fe14B+2H2⇔  2RH2+Fe2B+12Fe、または\n\nR2Fe14B+2H2⇔  2RH2+Fe3B+11Fe\n\n【0008】\n\nその後、温度500℃〜1000℃で脱水素処理を行った後、冷却することによって合金磁石粉末を得る。この脱水素処理により、上記の水素化物や鉄基硼化物などから再びR2Fe14B相が生成される。\n\n【0009】\n\n水素化前において比較的大きなサイズ(粒径:数十μm以上)を有していたR2Fe14B結晶粒の各々は、HDDR処理により、多数の細かいR2Fe14B結晶粒(粒径0.1〜1μm程度)の集合体に変化する。このようにして形成された非常に微細なR2Fe14B結晶粒の集合体を「再結晶集合組織」と呼ぶ。再結晶集合組織中の微細なR2Fe14B結晶粒は、もとの大きなR2Fe14B結晶粒の結晶方位を記憶している。このため、粉砕や分級によってHDDR処理後の合金粉末の粒径をHDDR処理前の結晶粒径程度以下の範囲にすれば、各粉末粒子に含まれる微細なR2Fe14B結晶粒の結晶方位は特定の方向に整列するため、磁気的異方性を発揮することができる。また、「再結晶集合組織」中の微細なR2Fe14B結晶粒は単磁区臨界粒径に近いサイズを有しているため、高い保磁力を発揮することもできる。\n\n【0010】\n\n以下、図19(a)〜(e)を参照しながら、HDDR処理を説明する。\n\n【0011】\n\n図19(a)は、希土類-鉄-硼素系の母合金1の一部を模式的に示している。母合金1は多結晶であるため、その中に多数の粒界3が存在し、各結晶粒の結晶方位2は必ずしも一方向にそろっていない。母合金1に対して粗粉砕工程を行い、図19(b)に示すように、各々が単一の結晶方位を有する程度の大きさを持った粉末粒子5を形成する。粉末粒子5の粒径が大きすぎると、各粉末粒子5は多結晶状態になり、粉末粒子5に含まれる結晶粒の方位が一つにそろわなくなる。ここで、粉末粒子5の集合体を粗粉砕粉4と称することにする。\n\n【0012】\n\n次に、粗粉砕粉4に対してHDDR処理を施し、各粒子5に再結晶集合組織を与える。図19(c)は、各粉末粒子5内に再結晶集合組織7が形成された状態を示している。なお、図19(d)は、再結晶集合組織7の拡大図であり、組織内の各結晶粒の結晶方位2が一方向に配向していることを示している。\n\n【0013】\n\n次に、図19(e)に示すように、粉末粒子5の凝集を解くか、微粉砕することにより、磁気異方性を有する合金粉末9を得ることができる。\n\n【0014】\n\n上述のようなHDDR処理を施すことによって、再結晶集合組織を持つ希土類-鉄-硼素系合金粉末を製造する方法は、例えば、特許文献1および特許文献2に開示されている。\n\n【0015】\n\n【特許文献1】\n\n特公平6-82575号公報\n\n【特許文献2】\n\n特公平7-68561号公報\n\n【0016】\n\n【発明が解決しようとする課題】\n\nしかしながら、HDDR処理によって作製された磁性粉末(以下、「HDDR粉末」と称する)には、以下のような問題がある。\n\n【0017】\n\nまず、HDDR粉末の磁化を高めるために、母合金の段階で、高温で長時間の均質化処理(例えば、1100℃、20時間)が必須であった。これは、母合金組織が微細であると、HDDR処理前の原料粉末が多結晶となり、粉末粒子が磁気的に等方的になるからである。\n\n【0018】\n\nまた、母合金の全体にわたってHDDR処理を進行させるには、水素を母合金の内部にまで充分に拡散させる必要がある。そのためには水素化処理の時間を長くしなければならない(例えば、800℃、6時間)が、水素化処理の時間が長くなるほど、飽和磁化が低下する傾向がある。この理由は、水素化処理時間が長くなると、前述の化学式で示される可逆反応が繰り返し起こり、母合金のR2Fe14B相の結晶方位の記憶が次第に失われてゆく結果、最終的に得られる「再結晶集合組織」の磁気的異方性が低下してしまうからである。\n\n【0019】\n\n一方、水素化処理の時間を短くすると、HDDR処理が不完全になり、微細なR2Fe14B相の生成が不充分となるため、高い保磁力HcJが得られず、残留磁束密度Brも低くなるという問題が生じる。\n\n【0020】\n\nこの問題を解決するため、母合金にGaなどを添加することが提案されている。特に母合金にGaを添加した場合、水素化処理の時間を長くしても、母合金中におけるR2Fe14B相の結晶方位の記憶が失われにくくなる。その結果、保磁力HcJおよび残留磁化Jrの両方を充分なレベルにまで向上させることができる。\n\n【0021】\n\nしかしながら、Gaは高価であり、水素化処理のための熱処理を長時間行うことも製造コストを増加させる。HDDR粉末の性能を高めつつ、低コストで量産するには、高価なGaの添加が不要となり、しかも、短い水素化処理時間で必要な磁石特性を得ることが強く求められている。\n\n【0022】\n\n上記特許文献1および特許文献2では、母合金として高周波溶解炉などで溶解、鋳造して製造したいわゆる合金インゴットを用いた場合について説明しているが、近年ではストリップキャスティング法にて得られた薄板状原料(合金鋳塊)にHDDR処理を施した粉末を用いてボンド磁石を得る方法も提案されている(特許第3213638号)。\n\n【0023】\n\nしかしストリップキャスティング法にて得られる合金鋳塊は、実質的にα-Fe相を含有せず、均質な組織を有するものの、結晶粒のサイズが小さすぎるため、ボンド磁石に用いる粉末粒度では各粉末粒子の磁気的異方性が低く、実用化に至っていないのが現状である。\n\n【0024】\n\n本発明は、かかる諸点に鑑みてなされたものであり、その主な目的は、実質的にGaを添加しなくとも、前記母合金の均質化処理の省略および水素化処理時間の短縮を可能とし、保磁力HcJおよび残留磁化Jrの両方を向上させることが可能な希土類-鉄-硼素系合金、磁気異方性磁石粉末およびその製造方法、更に異方性ボンド磁石およびその製造方法を\n\n提供することにある。\n\n【0025】\n\n【課題を解決するための手段】\n\n本発明の磁気異方性磁石粉末の製造方法は、希土類-鉄-硼素系合金の溶湯を冷却することによって母合金を作製する工程と、前記母合金に対してHDDR処理を施す工程とを包含する磁気異方性磁石粉末の製造方法であって、前記母合金を作製する工程は、前記合金の溶湯を冷却部材に接触させることにより、前記合金の溶湯を冷却し、内部に希土類リッチ相が分散した複数のR2Fe14B型結晶(Rは希土類元素およびイットリウムからなる群から選択された少なくとも1種の元素)を含む凝固合金層を形成する工程を含む。\n\n【0026】\n\n好ましい実施形態において、前記凝固合金層を形成する工程は、前記冷却部材に接触する側に第1組織層を形成した後、前記第1組織層上に更に前記合金の溶湯を供給することにより、前記R2Fe14B型結晶を前記第1組織層上に成長させて第2組織層を形成することを含む。\n\n【0027】\n\n好ましい実施形態において、前記第1組織層は、主として短軸方向平均サイズが20μm未満のR2Fe14B型結晶である。\n\n【0028】\n\n好ましい実施形態において、前記第2組織層におけるR2Fe14B型結晶の短軸方向平均サイズは20μm以上、長軸方向平均サイズは100μm以上である。\n\n【0029】\n\nなお、本明細書において、合金組織中のR2Fe14B型結晶の個々の領域は、結晶方位が同じ領域を意味するものである。すなわち、「結晶方位が同じ領域」とは、合金の断面組織を偏光顕微鏡で観察したとき、観察像中のコントラストが同じ領域であるものとする。\n\n【0030】\n\n好ましい実施形態において、前記凝固合金層は、第1組織層と第2組織層とを有し、前記第1組織層の比率が体積比で10%未満である。\n\n【0031】\n\n好ましい実施形態において、前記第2組織層における希土類リッチ相は、前記R2Fe14B型結晶の内部において、平均50μm以下の間隔で分散している。\n\n【0032】\n\n好ましい実施形態において、前記母合金中に含まれるα-Fe相の比率は、5体積%以下である。\n\n【0033】\n\n好ましい実施形態において、前記母合金中に含まれる希土類元素の濃度は、26質量%以上32質量%以下である。\n\n【0034】\n\n好ましい実施形態において、前記母合金中に含まれるGaの濃度は、0.6質量%以下である。\n\n【0035】\n\n好ましい実施形態において、前記第1組織層を形成する際の合金溶湯の冷却は、10℃/s以上1000℃/s以下、過冷却100℃以上300℃以下の条件で行い、前記第2組織層を形成する際の合金溶湯の冷却は、1℃/s以上500℃/s以下の条件で行う。\n\n【0036】\n\n好ましい実施形態において、前記第1組織層の冷却部材接触部に空隙部を形成する。\n\n【0037】\n\n好ましい実施形態において、前記合金の溶湯が冷却部材に届く時点における前記溶湯の温度は約1300℃以下である。\n\n【0038】\n\n好ましい実施形態において、前記凝固合金層の形成は、遠心鋳造法によって行う。\n\n【0039】\n\n好ましい実施形態において、前記母合金に対してHDDR処理を施す工程は、前記母合金の温度を550℃以上900℃以下の範囲に昇温させた後に水素と反応させる工程を含んでいる。\n\n【0040】\n\n本発明の希土類-鉄-硼素系合金は、第1組織層と、第1組織層上に内部に希土類リッチ相が分散した複数のR2Fe14B型結晶(Rは希土類元素およびイットリウムからなる群から選択された少なくとも1種の元素)を形成した第2組織層を有し、前記第1組織層の比率が体積比で10%未満であるとともに、前記R2Fe14B型結晶の短軸方向平均サイズが20μm以上110μm以下であり、前記希土類リッチ相が前記R2Fe14B型結晶の内部において平均50μm以下の間隔で分散している。\n\n【0041】\n\n好ましい実施形態において、前記合金中に含まれるα-Fe相の比率は、5体積%以下である。\n\n【0042】\n\n好ましい実施形態において、希土類元素の濃度が26質量%以上32質量%以下である。\n\n【0043】\n\n好ましい実施形態において、Gaの濃度が0.6質量%以下である。\n\n【0044】\n\n本発明の磁気異方性希土類-鉄-硼素系合金粉末は、平均粒径が10μm以上300μm以下であり、粒径50μm以下の粉末粒子における希土類元素濃度が、粒径50μmを超える粉末粒子における希土類元素濃度を超えない。\n\n【0045】\n\n好ましい実施形態においては、水素処理によって脆化されている。\n\n【0046】\n\n本発明の磁気異方性希土類-鉄-硼素系合金磁石粉末は、希土類元素の濃度が26質量%以上32質量%以下、α-Fe相の比率が5体積%以下、Gaの濃度が0.6質量%以下であり、HDDR処理によって形成された微細集合組織を含んでいる。\n\n【0047】\n\n本発明の異方性ボンド磁石の製造方法は、上記いずれかの製造方法によって作製された磁気異方性磁石粉末を用意する工程と、前記磁気異方性磁石粉末を結合剤と混合し、配向磁界中で成形する工程とを包含する。\n\n【0048】\n\n本発明の異方性ボンド磁石は、上記の磁気異方性希土類-鉄-硼素系合金磁石粉末を含む。\n\n【0049】\n\n本発明のモータは、上記の異方性ボンド磁石を備えている。\n\n【0050】\n\n【発明の実施の形態】\n\n本発明者は、HDDR処理の対象となる母合金の金属組織構造が水素化処理に要する時間に大きな影響を及ぼすことを見出し、本発明を想到するに至った。本発明者は、種々の組織形態を有する母合金に対するHDDR処理を行い、得られたHDDR粉末の磁気特性を評価したところ、図1(d)に示すような金属組織を有する母合金を用いた場合には、主相であるR2Fe14B型結晶が粗大であっても、短時間で水素化処理を遂行することができ、その結果、飽和磁化の低下を招くことなく、保磁力増加を達成できることを見出した。\n\n【0051】\n\n図1(d)は、本発明の磁気異方性磁石粉末の製造に用いる母合金の金属組織を模式的に示している。この母合金は、比較的大きな柱状結晶の内部に微細な希土類リッチ相(図中、黒いドット状領域として示されている)が分散した構造を有している。このような、内\n\n部に希土類リッチ相が分散した複数の柱状結晶を含む母合金は、希土類-鉄-硼素系合金の溶湯を冷却部材に接触させ、合金溶湯を冷却することによって形成することができる。合金の組成は、R2Fe14B型結晶の化学量論比に近く、必要に応じて種々の元素が添加されたものを使用し得る。例えば、母合金の組成をRxT100-z-y-zByMz(質量比)で表現した場合、Rは希土類元素およびイットリウムからなる群から選択された少なくとも1種の元素、TはFeおよび/またはCo、Bは硼素、Mは添加元素である。x、z、およびyを質量比率とすると、それぞれ、26≦x≦32、0.95≦y≦1.20、および0.01≦z≦2を満足することが好ましい。Mは、Al、Ti、V、Cr、Mn、Ni、Cu、Zn、Ga、Zr、Nb、Mo、In、Sn、Hf、Ta、W、およびPbからなる群から選択された少なくとも1種の元素である。また、Bの一部はC、N、Si、P、および/またはSで置換してもよい。\n\n【0052】\n\n以下、図1(a)から(d)を参照しながら、上記母合金の好ましい作製方法を詳細に説明する。\n\n【0053】\n\nまず、図1(a)に示すように、合金の溶湯Lを冷却部材(例えば銅製の冷却板や冷却ロール)に接触させることにより、冷却部材に接触する側に微細な初晶(R2Fe14B)を含む第1組織層を薄く形成する。この後、あるいは第1組織層を形成しつつ、第1組織層上に更に上記合金の溶湯Lを供給することにより、第1組織層上に柱状結晶(R2Fe14B型結晶)を成長させる(図1(b))。この柱状結晶は、溶湯の供給を継続しながら最初よりも冷却速度の低い状況下で合金溶湯を冷却することによって作製される。その結果、図1(c)に示すように、比較的ゆっくりと供給される合金溶湯中の希土類元素が下方に位置する大きな柱状結晶の粒界に拡散しないうちに凝固が進行し、内部に希土類リッチ相が分散した柱状結晶が大きく成長することになる。このように、凝固初期において初晶を形成するときは冷却速度を相対的に速くし、その後の結晶成長に際しては冷却速度を遅くすることにより、最終的には、図1(d)に示すように粗大な柱状結晶を含む第2組織層が得られる。\n\n【0054】\n\n本発明における合金の第1組織層は、HDDR処理後においては、磁粉が大きな磁化を発揮するためには不要かつ有害である。しかし、第1組織層は、その表面が第2組織層の凝固核となり、更には第2組織層の冷却速度を制御するという重要な役割を果たしており、本発明においては必須である。合金全体に占める第1組織層の比率は、体積比で10%未満、より好ましくは5%未満である。なお、後述するように第1組織層と第2組織層との間には、短軸方向の平均サイズが異なるという差異が存在する。このため、顕微鏡による合金断面を観察すれば、各組織層の厚さ比率を容易に測定できるので、その厚さ比率から体積比を測定するができる。\n\n【0055】\n\n第2組織層を安定して形成するためには、凝固速度を厳密に制御する必要がある。凝固速度が大きすぎると、凝固組織が微細になってしまうが、逆に凝固速度が小さくなりすぎると、α-Feが生成してしまう。\n\n【0056】\n\n第1組織層は、主として微細なR2Fe14B型結晶から構成され、その結晶粒径は、短軸方向平均サイズで20μm未満である。また、偏光顕微鏡による光学的な結晶方位観察では、R2Fe14B型結晶の結晶方位は特定することができない。\n\n【0057】\n\n一方、第2組織層は、主として粗大なR2Fe14B型結晶から構成され、その結晶粒径は、短軸方向平均サイズで20μm以上であり、長軸方向平均サイズは100μm以上である。\n\n【0058】\n\n偏光顕微鏡によれば、第2組織層のR2Fe14B型化合物が存在する部分において、R2F\n\ne14B型化合物の結晶学的なC面に起因する迷図模様または冷却部材に平行な縞模様が観察される。第2組織層におけるR2Fe14B型化合物のC軸は冷却部材に対し略平行に配向している。言い換えると、このC軸は、結晶の短軸方向とほぼ一致している。\n\n【0059】\n\n更に詳述すると、第2組織層における柱状結晶の短軸方向平均サイズは20μm〜110μmであることが好ましく、60〜110μmであることが更に好ましく、70〜100μmであることが最も好ましい。第2組織層における柱状結晶の短軸方向平均サイズを上記の範囲内に設定することにより、後述する実施例のように保磁力および残留磁化のいずれもが向上する。\n\n【0060】\n\n各々異なる短軸方向平均サイズを有する第1組織層と第2組織層とは、それらが所定の比率で形成されるときに良好な磁気特性を示す。上述のように、合金全体に占める第1組織層の体積比が10%未満、より好ましくは5%未満のときに、良好なる磁気特性が発揮される。\n\n【0061】\n\n第2組織層を構成するR2Fe14B型結晶の内部には、平均50μm以下の間隔で希土類リッチ相が分散している。上記間隔は、好ましくは平均20μm〜平均50μmの範囲にあり、更に好ましくは平均30μm〜平均50μmの範囲にある。\n\n【0062】\n\n本明細書においては、第1組織層および第2組織層におけるR2Fe14B型結晶の短軸方向の平均サイズを、以下の測定方法によって定義する。すなわち、合金の厚さ方向の断面を、偏光顕微鏡写真(図17及び図18参照)で観察し、冷却部材接触面と平行な切断線を設定する。そして、この切断線が各々R2Fe14B型結晶を横切る個数(No)を数える。R2Fe14B型結晶の短軸方向の平均サイズは、切断線長さ(Lo)を用いて、Lo/Noによって表現される。\n\n【0063】\n\n本明細書では、冷却部材接触面から厚さ方向に平行移動した切断線に沿って短軸方向の平均サイズを測定し、その値が20μm未満の範囲を第1組織層と、20μm以上の範囲を第2組織層とする。そして、各々の組織層の厚さが合金全体の厚さに占める割合に基づいて、上記の体積比を算出することができる。\n\n【0064】\n\nなお、第2組織層におけるR2Fe14B型結晶の短軸方向平均サイズとは、上記測定法によって測定された短軸方向サイズのうち、合金の厚さ方向中央部における値である。\n\n【0065】\n\nまた、第2組織層内における希土類リッチ相の間隔は、以下の測定方法によって求める。\n\n【0066】\n\n合金の厚さ方向の断面を反射電子線像(図24から図26)で観察すると、希土類リッチ相が白く観察される。この反射電子線像上において、冷却部材接触面と平行な切断線を設定する。切断線が白い希土類リッチ相を横切る個数Nを数え、切断線長さLとから、希土類リッチ間隔=L/Nで求めることができる。なお、切断線を入れる位置は、合金の厚さ方向の中央部に設定し、数点の視野から求めた値の平均値を算出する。\n\n【0067】\n\n微細な初晶の集合体である第1組織層を形成する際の合金溶湯の冷却は、10℃/s以上1000℃/s以下、過冷却100℃以上300℃以下の条件で行うことが好ましい。過冷却により、Fe初晶の析出を抑制できる。一方、第2組織層を形成する際の合金溶湯の冷却は、溶湯を供給しつつ、1℃/s以上500℃/s以下の条件で行うことが好ましい。\n\n【0068】\n\n冷却速度は、溶湯を冷却部材上に供給する速度によって調節されるため、上述のような合金組織を得るには、溶湯供給量の調節が可能な冷却方法を採用することが重要である。よ\n\nり詳細には、本発明の合金組織を得るには、冷却部材(鋳型など)の上に溶湯を均一に少量づつ供給することが望ましい。このため、溶湯を液滴化して分散·噴霧する冷却方法を行うことが好ましい。例えば、溶湯流にガスを噴き当てて噴霧する方法や、遠心力によって液滴を飛散させる方法を採用することができる。\n\n【0069】\n\n第2組織層の冷却速度をより容易に制御するためには、以下の方法を採ることができる。すなわち、第1組織層を形成する段階で、第1組織層内に空隙を形成し、第1組織層の実質的な伝熱断面積を小さくする方法である。これにより、第2組織層の形成時に溶湯供給量を少なく調整せずとも、第2組織層の冷却速度は、伝熱面積の減少に伴って小さくなる。なお、第1組織層における空隙の形成と溶湯供給量の調整とを同時に行うこともできる。\n\n【0070】\n\n図27(a)から(e)を参照しながら、第1組織層に空隙を形成する場合の母合金の好ましい作製方法を説明する。\n\n【0071】\n\nまず、図27(a)に示すように、溶湯液滴を冷却部材上に供給し、最初期の微細なR2Fe14B型結晶を生成する。図27(b)は、空隙の形成状態を示す。凝固層の上には、次に供給された溶湯が存在している。\n\n【0072】\n\n溶湯の供給により、図27(c)に示すように第1組織層上に大きなR2Fe14B型結晶が生成し始め、第1組織層から第2組織層への遷移が生じる。図27(d)および(e)は、第2組織層の成長の様子を示している。冷却面の空隙は、凝固終了後も残存する。\n\n【0073】\n\nなお、第1組織層に空隙を形成するためには、比較的粘性の高い溶湯を噴霧供給すれば良い。具体的には、溶湯の温度を通常の合金鋳造時における1450℃よりも低下させ、冷却部材に届く時点の温度を1300℃程度以下にする方法がある。\n\n【0074】\n\n溶湯の温度制御は、噴霧液滴化した後、飛行中に放熱させる方法を採ることができる。具体的には、不活性ガスに満たされた炉内雰囲気を大気圧程度に維持する方法や、不活性ガスで溶湯を噴霧する方法を採ることができる。不活性ガスとしては、一般的にはArガスが用いられるが、Heガスを用いてもよい。Heガスを用いることにより、溶湯液滴の放熱が促進される。\n\n【0075】\n\n第1組織層における空隙の存在比率は、冷却部材と母合金との接触面で示すことができる。母合金を厚さ方向の断面組織を観察すれば、冷却部材との接触面と空隙部を容易に区別できるので、冷却面の長さに対する空隙部の占める長さを比として表すことができる。本発明の合金では、空隙率が20%〜70%の範囲内にある。\n\n【0076】\n\n本発明における溶湯冷却方法で重要な他の点は、生成した溶湯の液滴を冷却部材上において高い収率で回収する(凝固合金の形成に効率よく用いる)ことにある。収率を高めるには、平板状の冷却部材の上にガス噴霧で溶湯の液滴を吹き付ける方法や、回転する円筒ドラム状の冷却部材の内壁に溶湯の液滴を飛散させる方法(遠心鋳造法)を用いることが望ましい。\n\n【0077】\n\n上記の組織構造を持つ凝固合金は、ストリップキャスト法や合金インゴット法などの従来方法によっては得られなかった。以下、従来の方法によって作製される凝固合金(母合金)の結晶成長を説明する。\n\n【0078】\n\nまず、図2(a)から(c)を参照しながら、ストリップキャスト法による結晶成長を説明する。ストリップキャスト法では、冷却速度が速いため、高速で回転する冷却ロールな\n\nどの冷却部材に接触した合金溶湯Lは、接触面から急速に冷却され、凝固してゆく。大きな冷却速度を得るためには合金溶湯Lの量を少なくする必要があり、また、ストリップキャスト装置の構造上、溶湯の逐次供給を行うことができない。その結果、冷却部材上の溶湯Lの厚さは冷却過程で増加せず、略一定であり、その一定の厚さを有する溶湯Lの内部において冷却部材との接触面から結晶成長が急速に進行してゆくことになる。冷却速度が速いため、柱状結晶の短軸方向サイズは、図2(a)から(c)に示すように小さく、最終的に得られる凝固合金の金属組織は微細である。希土類リッチ相は柱状組織の内部には存在せず、粒界に分散している。ストリップキャスト合金では、結晶粒のサイズが小さすぎるため、結晶方位の揃った領域が小さく、ボンド磁石に用いる粉末粒度では、各粉末粒子の磁気的異方性が低下するという問題がある。\n\n【0079】\n\n次に、図3(a)から(d)を参照しながら、従来のインゴット法による結晶成長を説明する。インゴット法では、冷却速度が比較的遅いため、冷却部材に接触した合金溶湯Lは、接触面からゆっくりと冷却され、凝固してゆく。静止状態の溶湯Lの内部において、まず、冷却部材との接触面にFe初晶が生成され、その後、図3(b)および(c)に示すように、Feのデンドライド結晶が成長してゆく。最終的には、包晶反応により、R2Fe14B型結晶相が形成されるが、その内部には磁石特性を劣化させるα-Fe相が残存することになる。凝固合金の金属組織は粗大であるが、体積比率で2%を超えるような量の粗大なα-Fe相が残存する。α-Feを低減するためには、均質化処理を行う必要がある。具体的には、インゴット合金中のα-Fe相やR2Fe17相などを拡散させ、これらの相を可能な限り消滅させ、実質的にR2Fe14B相とR-rich相の2相からなる組織にする必要がある。均質化熱処理は、窒素を除く不活性ガス雰囲気中または真空中において、1100℃〜1200℃の範囲の温度で1〜48時間行われる。このような均質化処理は、製造コストを増大させるという問題がある。一方、α-Feの生成を抑制するには、原料合金中に含まれる希土類の組成量を化学量論比よりも充分に大きくすることが必要であるが、希土類の含有量が多くなると、最終的に得られる磁石の残留磁化が低下し、また、耐食性が劣化するという問題もある。\n\n【0080】\n\n本発明で用いる母合金(図1及び図27参照)は、化学量論比に近い希土類含有量であっても、α-Feが生成されにくいという利点がある。このため、希土類含有量を従来よりも低減することが可能である。更に、本発明で用いる母合金は、主相のサイズがストリップキャスト合金に比べて大きいため、HDDR処理によって高い磁気異方性を発現させることができ、磁気異方性磁石粉末の母合金として好適である。\n\n【0081】\n\nこのような組織を持つ母合金によれば、希土類元素の濃度を26質量%以上32質量%以下の範囲に設定した場合でも、熱処理前の母合金(as-cast)中に含まれるα-Fe相が微細であり、その比率を5体積%以下に抑制することが可能である。このため、従来のインゴット合金に必要であった母合金に対する均質化熱処理を行わなくとも、HDDR粉末の磁気特性、特に保磁力に悪影響を及ぼすことがない。\n\n【0082】\n\n次に、各種の組織構造を有する上記母合金に対してHDDR処理を行った場合に、どのような差異が生じるかを説明する。\n\n【0083】\n\n図4(a)から(c)は、それぞれ、本発明の母合金、従来のインゴット合金、およびストリップキャスト合金について、HDDR処理前の時刻T1における組織を模式的に示している。図示するように、従来のインゴット合金におけるR2Fe14B型結晶相は粗大であるが、ストリップキャスト合金におけるR2Fe14B型結晶相の短軸粒径は小さい。また、本発明による母合金では、R2Fe14B型結晶相の平均粒径はストリップキャスト法による母合金におけるR2Fe14B型結晶相の平均粒径よりも大きく、R2Fe14B型結晶相の内部に希土類リッチ相が分散している点に特徴がある。\n\n【0084】\n\n図5(a)から(c)は、それぞれ、本発明の母合金、従来のインゴット合金、およびストリップキャスト合金について、HDDR処理開始後の時刻T2における組織を模式的に示している(T12Fe14B型結晶相の粒界部から内部に向かって進行する。\n\n【0085】\n\n図6(a)から(c)は、それぞれ、本発明の母合金、従来のインゴット合金、およびストリップキャスト合金について、HDDR処理開始後の時刻T3における組織を模式的に示している(T22Fe14B型結晶粒の内部には水素化反応が充分に進んでいない部分が多く存在している。これに対し、本発明による母合金では、結晶粒径が大きいにもかかわらず、比較的早い段階で水素化反応が広い領域で進行している。このように本発明による母合金で水素化反応が速やかに進行する理由は、R2Fe14B型結晶粒の内部に分散する希土類リッチ相が水素拡散の経路を形成するためであると考えられる。\n\n【0086】\n\n図7(a)から(c)は、それぞれ、本発明の母合金、従来のインゴット合金、およびストリップキャスト合金について、HDDR処理の途中における組織を模式的に示している。HDDR処理開始後の時刻T4における組織を模式的に示している(T3【0087】\n\n図8は、HDDR処理における水素化処理時間Tと残留磁束密度Brおよび保磁力HcJとの関係を示すグラフである。グラフにおける○、●、および▲のデータは、それぞれ、本発明による合金、従来のインゴット合金、およびストリップキャスト合金に関している。合金の組成は、Nd:27.5質量%、Zr:0.1質量%、B:1.0質量%、およびFe:残余であった。HDDR処理の前には、0.3MPaの水素雰囲気中で2時間の水素脆化処理を行った後、425μm以下のサイズに粗粉砕した。その後のHDDR処理の条件は、以下の通りである。\n\n【0088】\n\nまず、圧力0.1MPaの水素雰囲気(850℃)でグラフに示す時間だけ水素化処理を行い、その後、アルゴンガスによる置換を5分間行った。次に、850℃で30分間、圧力1.0kPaのアルゴン雰囲気中で脱水素処理を行った後、室温まで冷却した。\n\n【0089】\n\n図8からわかるように、水素化処理の初期段階においては、処理時間の増加に従って保磁力HcJは増加するが、やがて飽和する。本発明による合金の場合、水素化処理の時間が1時間以下であっても、充分に高い保磁力を示している。これは、水素が粗粉砕粉末の内部にまで速やかに拡散し、早い段階で水素化反応が完了することを意味している。一方、ストリップキャスト合金やインゴット合金の場合は、保磁力が飽和レベルに達する時間が長い。特に、インゴット合金の場合、2時間以上の水素化処理を行わないと、充分な保磁力は得られなかった。\n\n【0090】\n\n残留磁束密度Brは、水素化処理時間の経過に伴ってピーク値を示した後、水素化処理時間が長くなるほど低下した。これは、前述したように、水素化処理時間が長くなるほど、水素化および脱水素化の可逆反応が何度も繰り返され、母合金における結晶方位の記憶が\n\n徐々に消失してゆくためである。\n\n【0091】\n\n本発明の合金を用いる場合は、他の合金の場合に比べて短い水素化処理時間で充分に高い保磁力HcJを得ることができるため、保磁力HcJおよび残留磁化Jrの両方が優れたレベルにあるHDDR粉末を得ることが可能になる。\n\n【0092】\n\n図9は、残留磁化Jrおよび保磁力HcJの平均粉末粒度依存性を示すグラフである。グラフにおける○、●、および▲のデータは、それぞれ、本発明による合金、従来のインゴット合金、およびストリップキャスト合金に関している。\n\n【0093】\n\n保磁力は平均粉末粒径が大きい場合に相対的に低くなっているが、本発明による合金の場合、平均粉末粒径が大きい場合でも残留磁化Jrの低下は少ない。これは、本発明の場合、母合金の結晶粒径が大きく、より広い範囲で結晶方位のそろった再結晶集合組織が形成されているためと考えられる。また、本発明の場合は、平均粉末粒径が大きくなっても保磁力は低下していない。\n\n【0094】\n\n[実施例1]\n\nまず、以下の表1に示す組成の母合金を遠心鋳造法によって作製した。具体的には、回転する円筒型冷却部材の内側に対して、希土類-鉄-硼素系合金の溶湯(温度:約1300℃)を遠心力で飛散させた。こうして、図1(d)に示すような組織を有する母合金を作製した。表1に記載している各組成に関する数値は、質量比率である。\n\n【0095】\n\n【表1】\n\n\n\n【0096】\n\n図17および図18は、本発明による母合金の偏光顕微鏡写真を示している。図17は、冷却部材との接触面近傍の組織断面を示しており、図18は、厚さ方向中央部の組織断面\n\nを示している。各図の上方が冷却面、下方が放冷面(自由面)側を示している。図からわかるように、接触面から100μm程度までの領域では微細な結晶組織(第1組織層)が形成されているが、接触面から100μm程度離れた内部側の領域(第2組織層)では大きな柱状結晶が形成されている。一方、自由面の近傍では、一部に微細な組織が観察されるが、大部分は粗大な結晶である。なお、合金鋳片の厚さは5〜8mmであり、その大部分は、粗大な柱状結晶の第2組織層から構成されている。なお、第1組織層と第2組織層との境界は、場所によって明瞭な部分と不明瞭な部分とが存在するが、上記のように第1組織層は冷却部材との接触面から100μm程度までの領域に形成され、合金鋳片厚さ方向の数%程度までである。第1組織層の厚さは、冷却条件によって合金鋳片の厚さの5%程度になることもあるが、10%未満にすることが望ましい。\n\n【0097】\n\n希土類含有量の異なる合金の試料の組織構造を比較したところ、希土類元素濃度が高い合金ほど、結晶サイズが小さくなっていることがわかった。\n\n【0098】\n\n粗大な結晶粒の組成像を観察したところ、希土類リッチ相が分散していることが確認できた。粗大な結晶粒中に分散する希土類リッチ相は、母合金中の希土類含有量が多くなるほど、多く観察された。また、α-Fe相は観察されなかった。\n\n【0099】\n\n次に、上記の各種組成を有する母合金に対して、水素脆化による粗粉砕を行った。具体的には、200℃で100分、水素雰囲気で水素脆化処理を行った後、めのう乳鉢で解砕し、ふるい分級によって425μm以下のサイズを有する粗粉砕粉を得た。\n\n【0100】\n\nこの後、10グラム程度の粗粉砕粉に対して、HDDR処理を行った。具体的には、水素化処理(昇温レート:15℃/分、処理温度:800℃、処理時間:1時間、雰囲気:水素雰囲気)→雰囲気置換(処理温度:800℃、処理時間:5分、雰囲気:アルゴン、アルゴン流量:5リッター/分)→脱水素処理(処理温度:800℃、処理時間:1時間、雰囲気:アルゴン、アルゴン圧力:2kPa)の条件で実行した。\n\n【0101】\n\nHDDR処理後の合金について、ふるい分級を行った後、VSMを用いて粒度毎に磁気特性を評価した。試料はパラフィンとともに磁界中で加熱·冷却して固定し、約5MPaのパルス磁界で着磁した後、減磁曲線を測定した。\n\n【0102】\n\n図10は、試料No.3から5の試料について、粗粉砕粉の粒度別Nd濃度を示している。グラフの縦軸はNd濃度(Nd concentration、質量%)であり、横軸は平均粉末粒度(Particle size、μm)である。試料No.4や試料No.5などのNd含有量が多い試料では、微粉(例えば、粒径50μm以下)におけるNd濃度が、粗粉におけるNd濃度よりも低くなっている。これに対し、BやZrの濃度は、グラフに示していないが、粒度依存性を示さなかった。\n\n【0103】\n\nNd濃度の粒度依存性は、従来のインゴット合金やストリップキャスト合金におけるNd濃度の粒度依存性とは反対の傾向を示している。すなわち、従来のインゴット合金やストリップキャスト合金の場合は、微粉(例えば、粒径50μm以下)におけるNd濃度が、粗粉におけるNd濃度よりも高くなるのが一般的である。\n\n【0104】\n\n従来のインゴット合金やストリップキャスト合金では、Ndなどの希土類元素は、R2Fe14B型結晶の化学量論比よりも高い濃度で粒界に存在する一方、主相結晶粒内においてはR2Fe14B型結晶の化学量論比で決まる値で存在する。水素脆化は希土類元素濃度の高い粒界部分を膨張させ、その部分から割れやすくするため、水素脆化によって作製した粗粉砕粉末中の微粉(粒径:50μm以下)は、粒界に由来する微粉末を含有する可能性が高く、その結果、希土類含有量は相対的に高くなる傾向がある。\n\n【0105】\n\nこれに対し、本発明による母合金では、粗大な結晶粒の内部に希土類リッチ相が分散しているため、粒界における希土類元素濃度が希土類リッチ相の分散した主相内部に比べて必ずしも高いといえない状態になっていると考えられる。また、母合金の主相結晶粒の内部においては、50μm程度(例えば10μm)以下の間隔をおいて希土類リッチ相が分散しているため、小さな粉末粒子中には、希土類リッチ相が少ない可能性もある。\n\n【0106】\n\n以上のことから、本発明による母合金の粗粉砕粉において、平均粒径50μm以下の微細な粉末粒子に含まれる希土類の濃度は、平均粒径50μmを超える粉末粒子中に含まれる希土類の濃度以下になっている。このことは、図10からわかるように、母合金の希土類含有量が高い場合に顕著である。\n\n【0107】\n\n水素脆化·粗粉砕処理後の合金について、真空中で800℃1時間の熱処理を行い、水素を合金から外部を放出させた後、VSMにより、原料粉末の粒度別の磁化(外部磁界Hex:1.2MAm-1)を測定した。\n\n【0108】\n\n図11は、試料No.1から4の試料に関する磁化(Magnetization、テスラ)の粒度依存性を示している。\n\n【0109】\n\n磁化は、粒度依存性を有しており、粒径が大きいほど、磁化が小さくなる傾向がある。粒度毎の組成変動はほとんどないため、粒径が大きくなるほど、結晶の配向度が低下していると考えられる。\n\n【0110】\n\n図12は、母合金中(HDDR処理前の原料粉末中)のCo含有量が磁化に与える影響を示し、図13は、母合金中(HDDR処理前の原料粉末中)のGa含有量が磁化に与える影響を示している。図14は、試料No.1から4について、HDDR処理後の磁気特性を示している。CoおよびGaを添加していない試料(Nd-Fe-B-Zr系合金)であっても、Nd含有量が高ければ、高い磁化が得られることがわかる。\n\n【0111】\n\n図15は、Co添加の効果をHDDR処理後の粉末について示している。Co添加量が2原子%の場合(グラフ中で「○」のデータ)、磁化は低下するが、保磁力の増加は顕著である。Co添加量が5原子%の場合(グラフ中で「□」のデータ)、磁化の低下は少なくなるが、保磁力向上の程度も小さくなる。\n\n【0112】\n\n図16は、Ga添加の効果をHDDR処理後の粉末について示している。Gaの添加は残留磁化にはほとんど影響を与えないが、保磁力はGa添加量に応じて増加することがわかる。\n\n【0113】\n\nこれらの図から、CoやGaの添加は、本発明による粗粉砕粉末の磁化を向上させることに対しては特に寄与していないことがわかる。従って、本発明によれば、磁化向上を目的としてCoゃGaを添加する必要は無くなる。\n\n【0114】\n\n従来、HDDR粉末を得るには、母合金中にCoおよびGaを添加することが好ましいと考えられてきたが、以上の実験結果から明らかなように、本発明では、CoやGaを添加していない場合でも充分に優れた磁気異方性磁石粉末を得ることができる。ただし、磁気特性の温度依存性を少なくするには、Coの添加が効果的であり、またCoの添加は耐候性向上に役立つため、用途に応じては、Coを添加することが好ましい。例えば希土類Rの含有量が32質量%の母合金にCoを添加する場合は、耐候性の観点から、Co含有量を1質量%以上に設定することが望ましい。\n\n【0115】\n\nなお、本発明の場合、上述したように、Gaを添加すると若干の磁気特性向上が図れるが、本発明の目的を達成するためにおいては必ずしも必須ではない。\n\n【0116】\n\nこうして作製したHDDR粉末を公知の結合剤と混合し、磁界中で成形すれば、磁石特性に優れた異方性ボンド磁石を得ることができる。この異方性ボンド磁石は、各種モータやアクチュエータの永久磁石に適用して優れた特性を発揮することが可能である。\n\n【0117】\n\n[実施例2]\n\nまず、前記表1に記載している試料No.10の組成と同一の組成を有するストリップキャスト合金およびインゴット合金を作製した。次に、各合金に対して水素化処理による脆化を施し、425μm以下に粗粉砕した。この後、以下の条件でHDDR処理を行った。\n\n【0118】\n\nまず、炉内を真空にした後、アルゴンガスで復圧し、大気圧(0.1MPa)のアルゴンガスを流気しつつ、試料を850℃まで加熱した。次に、試料温度を850℃に保持しながら、アルゴンガスによる流気を停止し、水素ガスの流気を開始した。毎分、炉内容積の約20%に相当する量の水素ガスを炉内に導入しつつ、排気した(圧力は一定に保持)。このような状態を2時間保持した後、炉内温度を略一定に維持したまま、水素の導入を停止し、代わりにアルゴンガスを炉内に導入した。このようなアルゴンガスの導入を5分間行い、炉内の雰囲気をアルゴンガスで置換した。更に、ロータリーポンプで炉内を減圧し、炉内のアルゴンガス圧力を2kPaにまで低下させ、その状態で1時間保持した。その後、炉内にアルゴンガスを供給し、炉内のアルゴンガス圧力を大気圧まで上昇させ、冷却工程を行った。\n\n【0119】\n\nこのHDDR工程は、非水素ガス雰囲気中で試料を高温(550℃以上900℃以下)に加熱した後、水素を炉内に供給し、水素化工程を開始する点に特徴を有している。合金の温度を充分に上昇させてから、炉内に水素を導入することにより、HDDR処理が過剰に進行することを抑制できる。本発明による母合金は、従来の合金に比べて水素と反応しやすいため、高温に上昇させるまで水素と反応させず、HDDR処理の進行を少し遅らせることが好ましい。\n\n【0120】\n\n以上のHDDR処理によって得られた粉末状の試料をふるいで分級した後、VSMを用いて試料の残留磁化Jrおよび保磁力HcJを粒度ごとに測定した。測定結果を図20に示す。本発明による母合金(本発明)、ストリップキャスト合金(比較例1)、およびインゴット合金(比較例2)に関する測定結果を比較すると、本発明による母合金の磁気特性が粒度の広い範囲にわたって優れていることがわかる。また、上記のHDDR処理を行うことにより、本発明の母合金については磁化が増加することがわかる。\n\n【0121】\n\n次に、上記のHDDR処理を行う前に、母合金に対して1120℃で8時間の熱処理を行った場合の測定結果を図21に示す。HDDR処理で到達する温度よりも高い温度での熱処理をHDDR工程の前に行うことにより、HDDR処理後の残留磁化Jrが向上するという効果が得られた。\n\n【0122】\n\n[実施例3]\n\n質量比率で27.0Nd-1.0Dy-15.0Co-0.6Ga-0.1Zr-1.0B-残部Feの組成を持つ合金溶湯を用意し、この溶湯を遠心噴霧によって冷却板上に堆積させ、合金(母合金)を作製した。このとき、冷却部材との接触面にはいずれの条件でもおよそ50%の空隙を形成させた。溶湯の噴霧量を変化させることにより、冷却板上での堆積レートを調節した。噴霧量が増加するほど、堆積レートも増加し、合金溶湯の冷却速度は低くなる。逆に、噴霧量が低下すると、堆積レートが小さくなるので、合金溶湯の冷却速度は速くなる。こうして、種々の冷却速度で母合金を作製した。\n\n【0123】\n\nこれらの母合金の断面を顕微鏡で観察し、画像処理によって主相の粒径および希土類リッチ相の分散間隔を測定した。分散間隔の決定は、具体的には、冷却基板と平行な切断線を用いる切断法によって行った。\n\n【0124】\n\n母合金の作製後、特別の高温熱処理を施すことなく、水素脆化を行い、粒径425μm以下のサイズに粗粉砕した。その後、HDDR処理を行った。HDDR処理は、次のようにして行った。\n\n【0125】\n\nまず、炉内を大気圧(0.1MPa)の水素ガスで流気しつつ、試料を800℃まで加熱し、800℃で2時間保持した。次に、水素の導入を停止し、代わりにアルゴンガスを炉内に導入した。このようなアルゴンガスの導入を5分間行い、炉内の雰囲気をアルゴンガスで置換した後、炉内のアルゴンガス圧力を1kPaにまで低下させ、その状態で1時間保持した。その後、炉内にアルゴンガスを供給し、炉内のアルゴンガス圧力を大気圧まで上昇させ、冷却工程を行った。このHDDR工程は、水素ガス雰囲気中で試料を加熱する点で、実施例2におけるHDDR工程と異なっている。\n\n【0126】\n\n図22は、本発明による母合金における主相の短径およびHDDR処理後の磁気特性について、堆積レートの依存性を示すグラフである。このグラフからわかるように、堆積レートが大きくなるほど、主相短径も大きくなっている。堆積レートが60μm/sを超えて大きくなると、磁気特性が低下するため、堆積レートは60μm/s以下に設定することが好ましい。\n\n【0127】\n\n図23(a)は、本発明による母合金における主相短径とHDDR処理後の磁気特性との関係を示すグラフであり、図23(b)は、この母合金における希土類リッチ相の分散間隔とHDDR処理後の磁気特性との関係を示すグラフである。\n\n【0128】\n\n図24から図26は、それぞれ、溶湯を冷却して母合金を作製する際の合金堆積レートが34μm/s、47μm/s、および62μm/sの場合における本発明の母合金の反射電子線像写真である。これらの写真から、母合金の堆積レートが大きいほど、希土類リッチ相の分散間隔(space of R-rich)が大きくなっていることがわかる。具体的には、合金堆積レートが34μm/s、47μm/s、および62m/sの場合、それぞれ、平均の分散間隔は19μm、43μm、および56μmであった。写真の暗い部分が主相を示し、明るい部分が希土類リッチ相を示している。また、黒い部分はα-Feを示している。なお、写真上における8mmの長さが現実の50μmに相当する。\n\n【0129】\n\n【発明の効果】\n\n本発明によれば、高価なGaを添加しなくとも、効果的にHDDR処理を実行でき、しかも、磁気異方性に優れた大きな再結晶集合組織を生成できるため、HDDR粉末の保磁力HcJおよび残留磁化Jrの両方を向上させることができる。また、母合金への均質化熱処理の省略、及びHDDR処理における水素化処理時間を短縮することが可能になるため、製造コストを低減し、製造時間を短縮できる。\n\n【図面の簡単な説明】\n\n【図1】(a)〜(d)は、本発明の磁気異方性磁石粉末の製造に用いる母合金の金属組織が形成される過程を模式的に示す断面図である。\n\n【図2】(a)〜(c)は、ストリップキャスト法による母合金の金属組織が形成される過程を模式的に示す断面図である。\n\n【図3】(a)〜(d)は、従来のインゴット法による母合金の金属組織が形成される過程を模式的に示す断面図である。\n\n【図4】(a)から(c)は、それぞれ、本発明の母合金、従来のインゴット合金、およ\n\nびストリップキャスト合金について、HDDR処理前の時刻T1における組織を模式的に示している\n\n【図5】(a)から(c)は、それぞれ、本発明の母合金、従来のインゴット合金、およびストリップキャスト合金について、HDDR処理開始後の時刻T2における組織を模式的に示す図である(T1【図6】(a)から(c)は、それぞれ、本発明の母合金、従来のインゴット合金、およびストリップキャスト合金について、HDDR処理開始後の時刻T3における組織を模式的に示す図である(T2【図7】(a)から(c)は、それぞれ、本発明の母合金、従来のインゴット合金、およびストリップキャスト合金について、HDDR処理開始後の時刻T4における組織を模式的に示す図である(T3【図8】残留磁化Jrおよび保磁力HcJとHDDR処理時間との関係を示すグラフである。\n\n【図9】残留磁化Jrおよび保磁力HcJと平均粉末粒度との関係を示すグラフである。\n\n【図10】試料No.3から5について、粗粉砕粉の粒度別Nd濃度を示すグラフである。グラフの縦軸はNd濃度(Nd concentration、質量%)であり、横軸は平均粉末粒度(Particle size、μm)である。\n\n【図11】試料No.1から4について、粗粉砕粉の粒度別磁化を示すグラフである。グラフの縦軸は磁化J(Magnetization、テスラ)であり、横軸は平均粉末粒度(Particle size、μm)である。\n\n【図12】試料No.3、6、7について、粗粉砕粉の粒度別磁化を示すグラフである。グラフの縦軸は磁化J(Magnetization、テスラ)であり、横軸は平均粉末粒度(Particle size、μm)である。\n\n【図13】試料No.7、10、12、13について、粗粉砕粉の粒度別磁化を示すグラフである。グラフの縦軸は磁化J(Magnetization、テスラ)であり、横軸は平均粉末粒度(Particle size、μm)である。\n\n【図14】試料No.1から4の試料について、HDDR処理後の磁気特性を示すグラフである。グラフの縦軸は、残留磁化Jr(Remanence、テスラ)と保磁力HcJ(Intrinsic coercivity、MAm-1)であり、横軸は平均粉末粒度(Particle size、μm)である。\n\n【図15】試料No.3、6、7について、HDDR処理後の磁気特性を示すグラフである。グラフの縦軸は、残留磁化Jr(Remanence、テスラ)と保磁力HcJ(Intrinsic coercivity、MAm-1)であり、横軸は平均粉末粒度(Particle size、μm)である。\n\n【図16】試料No.7、10、12、13について、HDDR処理後の磁気特性を示すグラフである。グラフの縦軸は、残留磁化Jr(Remanence、テスラ)と保磁力HcJ(Intrinsic coercivity、MAm-1)であり、横軸は平均粉末粒度(Particle size、μm)である。\n\n【図17】本発明による母合金の偏光顕微鏡写真であり、冷却部材との接触面近傍の組織断面を示している。\n\n【図18】本発明による母合金の偏光顕微鏡写真であり、厚さ方向中央部の組織断面を示している。\n\n【図19】(a)から(e)は、HDDR処理を説明する模式図である。\n\n【図20】本発明の母合金、従来のインゴット合金、およびストリップキャスト合金について、HDDR処理を行ったときの磁気特性を示すグラフである。グラフの縦軸は、残留磁化Jr(Remanence、テスラ)と保磁力HcJ(Intrinsic coercivity、MAm-1)であり、横軸は平均粉末粒度(Particle size、μm)である。\n\n【図21】本発明の母合金、従来のインゴット合金、およびストリップキャスト合金について、1020℃の熱処理およびHDDR処理を行ったときの磁気特性を示すグラフである。グラフの縦軸は、残留磁化Jr(Remanence、テスラ)と保磁力HcJ(Intrinsic coercivity、MAm-1)であり、横軸は平均粉末粒度(Particle size、μm)である。\n\n【図22】  本発明による母合金における主相の短径およびHDDR処理後の磁気特性に\n\nついて、堆積レート依存性を示すグラフである。グラフの縦軸は主相平均短径(Width of grain、[μm])、残留磁化Jr(Remanence、[テスラ])と保磁力HcJ(Intrinsic coercivity、MAm-1)であり、横軸は堆積レート(μm/s)である。\n\n【図23】(a)は、本発明による母合金における主相の短径とHDDR処理後の磁気特性との関係を示すグラフであり、(b)は、この母合金における希土類リッチ相間隔とHDDR処理後の磁気特性との関係を示すグラフである。(a)のグラフの横軸は、主相平均短径であり、(b)のグラフの横軸は、希土類リッチ相の分散間隔である。\n\n【図24】溶湯を冷却して母合金を作製する際の合金堆積レートが34μm/sの場合における本発明の母合金の反射電子線像写真である。\n\n【図25】溶湯を冷却して母合金を作製する際の合金堆積レートが47μm/sの場合における本発明の母合金の反射電子線像写真である。\n\n【図26】溶湯を冷却して母合金を作製する際の合金堆積レートが62μm/sの場合における本発明の母合金の反射電子線像写真である。\n\n【図27】(a)〜(e)は、本発明の磁気異方性磁石粉末の製造に用いる母合金の金属組織が形成される過程を模式的に示す断面図である。\n\n【符号の説明】\n\n1    母合金\n\n2    結晶方位\n\n3    粒界\n\n4    粗粉砕粉\n\n5    各粉末粒子\n\n7    再結晶集合組織\n\n9    合金粉末(HDDR粉末)', '【0001】\n\n 发明领域\n\n 稀土铁硼合金，磁性各向异性永磁体粉末及其制造方法，以及使用该磁性各向异性永磁体粉末的各向异性粘结磁体及其制造方法。\n\n  【0002】\n\n [现有技术]\n\n 稀土-铁-硼稀土磁体是一种典型的高性能永磁体，其结构包含三元四方化合物R2，Fe14，B型晶相作为主相。 并表现出优异的磁铁特性。 在此，R为选自由稀土元素和钇组成的组中的至少一种元素，并且Fe和B中的一些可以被其他元素取代。\n\n  【0003】\n\n 这种稀土-铁-硼稀土磁体大致分为烧结磁体和粘结磁体。 烧结磁铁是通过利用压力机将稀土-铁-硼系磁铁合金的微粉（平均粒径：几μm）压缩成型而进行烧结而制造的。 另一方面，粘结磁体通常通过在压力机中将稀土-铁-硼磁体合金粉末（例如：粒径为约100μm）与粘合剂树脂的混合物（化合物）压缩成型而制造。 它\n\n  【0004】\n\n 在烧结磁体的情况下，由于使用具有相对小的粒径的粉末，因此每个粉末颗粒具有磁各向异性。 因此，当通过挤压装置将粉末压缩成型时，将定向磁场施加到粉末上，由此可以制造压粉体，其中粉末颗粒沿磁场方向取向。\n\n  【0005】\n\n 另一方面，在粘结磁体的情况下，由于所使用的粉末颗粒的粒径大于晶体粒径，因此通常没有磁各向异性，并且不可能使每个粉末颗粒在磁场中取向。 不能。 因此，为了制造其中粉末颗粒沿特定方向取向的各向异性粘结磁体，需要建立一种生产其中单个粉末颗粒表现出磁各向异性的磁性粉末的技术。\n\n  【0006】\n\n 为了生产用于各向异性粘结磁体的稀土合金粉末，目前正在研究HDRD（加氢-歧化-解吸-复合）处理。  “ HDDR”是指依次进行氢化，歧化，脱氢和重组的过程。 根据该HDDR工艺，首先，稀土-铁-硼合金（母合金）的平板或粉末为H2，气体气氛为H2，气体和惰性气体的混合气氛 在其中保持500℃至1000℃的温度，由此氢被吸留在合金中。 通过该储氢，R2，Fe14B相分解为稀土氢化物或铁基硼化物。 反应公式如下。\n\n  【0007】\n\n R2Fe14B + 2H2⇔2RH2+ Fe2B + 12Fe或\n\n R2Fe14B + 2H2⇔2RH2+ Fe3B + 11Fe\n\n  【0008】\n\n 之后，在500℃至1000℃的温度下进行脱氢处理，并且通过冷却获得合金磁体粉末。 通过该脱氢处理，再次由上述氢化物或铁系硼化物生成R2，Fe14B相。\n\n  【0009】\n\n 在氢化之前，其具有相对大的尺寸（粒径：几十μm或更大）R2，Fe14  2）Fe14B转变为晶粒的聚集体（晶粒尺寸0.1到1μm）。 这样形成的R2，Fe14，B晶粒的极细的集合体称为“再结晶织构”。 细R2Fe14再结晶组织中的B晶粒是原始的大R2Fe14  ing。 因此，如果通过粉碎或分级进行的HDRD处理后的合金粉末的粒径在HDRD处理之前的结晶粒径的范围内或以下，则各粉末粒子中所含的微细的R2，Fe14  ）。由于B晶粒的晶体取向在特定方向上排列，所以可以表现出磁各向异性。 另外，“再结晶织构”中的细R2，Fe14B晶粒的尺寸接近于单畴的临界晶粒尺寸，因此表现出高矫顽力。 你也可以\n\n  【0010】\n\n 下面将参考图19（a）至19（e）描述HDRD处理。\n\n  【0011】\n\n 图19（a）示意性地示出了稀土-铁-硼基中间合金1的一部分。 由于中间合金1是多晶，因此在其中存在大量的晶界3，并且各个晶粒的晶体取向2不一定在一个方向上排列。 如图19（b）所示，对母合金1进行粗粉碎工序，以形成具有单晶取向的大小的粉末粒子5。 如果粉末颗粒5的粒径太大，则粉末颗粒5将处于多晶状态，并且粉末颗粒5中包含的晶粒将不会在一个方向上排列。 此处，将粉末颗粒5的聚集体称为粗粉碎粉末4。\n\n  【0012】\n\n 接下来，将粗粉碎的粉末4进行HDDR处理，以使每个颗粒5具有重结晶织构。 图19（c）示出了在每个粉末颗粒5中形成重结晶织构7的状态。 注意，图19（d）是再结晶织构7的放大图，并且示出了织构中的每个晶粒的晶体取向2沿一个方向取向。\n\n  【0013】\n\n 接下来，如图19（e）所示，通过使粉末颗粒5解聚或将粉末颗粒微粉碎，可以得到具有磁各向异性的合金粉末9。\n\n  【0014】\n\n 例如，在专利文献1和专利文献2中公开了通过进行上述的HDDR处理来制造具有再结晶组织的稀土-铁-硼系合金粉末的方法。\n\n  【0015】\n\n [专利文献1]\n\n 日本专利公开号6-82575\n\n [专利文献2]\n\n 日本专利公开号7-68561\n\n  【0016】\n\n [本发明要解决的问题]\n\n 然而，通过HDDR工艺生产的磁性粉末（以下称为“ HDDR粉末”）具有以下问题。\n\n  【0017】\n\n 首先，为了增加HDRD粉末的磁化，在母合金阶段必须进行长时间的高温（例如1100℃，20小时）的均质化处理。 这是因为，如果中间合金组织良好，则HDRD处理前的原料粉末成为多晶，粉末粒子成为磁各向同性。\n\n  【0018】\n\n 此外，为了使HDRD工艺在整个中间合金中进行，必须将氢充分扩散到中间合金中。 为此目的，必须延长氢化时间（例如800℃，6小时），但是氢化时间越长，饱和磁化趋于越低。 其原因是，随着氢化时间的增加，由上述化学式表示的可逆反应反复发生，R2Fe14B相的晶体取向记忆逐渐消失。 结果，最终获得的“再结晶织构”的磁各向异性将减小。\n\n  【0019】\n\n 另一方面，如果缩短氢化时间，则HDRD工序不完全，无法充分生成R2，Fe14，B相的微粉，因此矫顽力HcJ高。  ■）。无法获得剩余磁通密度Br\n\n  【0020】\n\n 为了解决该问题，已经提出将Ga等添加到中间合金中。 特别地，当将Ga添加到中间合金中时，即使延长氢化时间，中间合金中R2，Fe14B相的晶体取向的记忆也不太可能丢失。 结果，可以将矫顽力HcJ和剩余磁化强度Jr提高到足够的水平。\n\n  【0021】\n\n 然而，Ga价格昂贵，并且长时间进行加氢处理的热处理也增加了制造成本。 为了以低成本大量生产HDDR粉末同时改善其性能，强烈需要添加昂贵的Ga并在短的加氢处理时间内获得所需的磁体特性。\n\n  【0022】\n\n 在上述专利文献1和专利文献2中，描述了使用通过在高频熔化炉等中的熔化和铸造而制造的所谓的合金锭作为母合金的情况，但是近年来，使用通过带式铸造法获得的薄板。 还提出了一种通过使用对原材料（合金锭）进行HDRD处理而获得的粉末来获得粘结磁体的方法（日本专利第3213638号）。\n\n  【0023】\n\n 但是，通过薄带铸造法得到的合金锭实质上不含有α-Fe相，具有均质的组织，但晶粒的尺寸过小。 目前，颗粒的磁各向异性很低，以至于尚未投入实际使用。\n\n  【0024】\n\n 考虑到这些不同点而做出了本发明，其主要目的是能够在基本上不添加Ga的情况下省略母合金的均质化处理并缩短氢化处理时间。  ，顽磁力HcJ，剩磁Jr稀土-铁-硼合金，磁性各向异性磁铁粉末及其制造方法以及各向异性 本发明提供一种粘结磁铁及其制造方法。\n\n  【0025】\n\n [解决问题的手段]\n\n 本发明的磁性各向异性磁铁粉末的制造方法包括：通过冷却稀土-铁-硼合金的熔融金属来制造中间合金的步骤；以及对该中间合金进行HDRD处理的步骤。 在磁性各向异性磁体粉末的制造方法中，通过使熔融合金与冷却构件接触以冷却熔融合金来执行制备中间合金的步骤，并且在内部形成富稀土相。 包括形成包含多个分散的R2，Fe14，B型晶体的固化合金层的步骤（R为选自稀土元素和钇中的至少一种元素）  ..\n\n  【0026】 \n\n在一优选实施例中，在进一步在第一纹理层上供应合金的熔融金属之后，在与冷却构件接触的一侧上形成第一纹理层之后，形成固化合金层的步骤， 然后在第一纹理层上生长R2，Fe14B型晶体，以形成第二纹理层。\n\n  【0027】\n\n 在优选的实施方式中，第一织构层主要是短轴方向的平均粒径小于20μm的R2，Fe14，B型晶体。\n\n  【0028】\n\n 在优选的实施方式中，第二织构层中的R2，Fe14，B型晶体的短轴方向的平均尺寸为20μm以上，长轴方向的平均尺寸为100μm以上。\n\n  【0029】\n\n 在本说明书中，合金结构中的R2Fe14B型晶体的每个区域是指具有相同晶体取向的区域。 即，“具有相同晶体取向的区域”是指当通过偏振显微镜观察合金的截面结构时，在观察图像中具有相同对比度的区域。\n\n  【0030】\n\n 在一个优选的实施方案中，凝固的合金层具有第一织构层和第二织构层，并且第一织构层的比例小于10体积％。\n\n  【0031】\n\n 在优选的实施方式中，第二织构层中的富含稀土的相以50μm以下的平均间隔分散在R2·Fe14·B型晶体中。\n\n  【0032】\n\n 在优选的实施方式中，母合金中所含的α-Fe相的比例为5体积％以下。\n\n  【0033】\n\n 在优选的实施方式中，母合金中所含的稀土元素的浓度为26质量％以上且32质量％以下。\n\n  【0034】\n\n 在优选的实施方式中，母合金中所含的Ga的浓度为0.6质量％以下。\n\n  【0035】\n\n 在优选的实施方式中，在形成第一织构层时的熔融合金的冷却在10℃/ s以上且1000℃/ s以下的条件，100℃以上且300℃以下的过冷却以及第二织构层的条件下进行。 成形时的熔融合金的冷却在1℃/ s以上且500℃/ s以下的条件下进行。\n\n  【0036】\n\n 在优选的实施方式中，在第一薄纸层的冷却部件接触部上形成有空隙。\n\n  【0037】\n\n 在一个优选的实施方案中，当熔融合金到达冷却构件时，熔融金属的温度为约1300℃或更低。\n\n  【0038】\n\n 在优选的实施方式中，所述凝固的合金层通过离心铸造法形成。\n\n  【0039】\n\n 在优选的实施方式中，使母合金经受DDR工艺的步骤包括将母合金的温度升高到550℃以上且900℃以下的范围，然后使其与氢反应的步骤。\n\n  【0040】\n\n 本发明的稀土-铁-硼合金具有第一织构层和多个R2，Fe14，B型晶体（其中富稀土相分散在第一织构层内）。  R具有第二纹理层，该第二纹理层形成至少一种选自稀土元素和钇的元素，第一纹理层的比例小于10体积％，R  2Fe14B型晶体短轴平均尺寸 的为20μm以上且110μm以下，并且富稀土相为R2Fe14 在B型晶体内部，它们以平均50μm或更小地分散。\n\n  【0041】\n\n 在优选的实施方式中，合金中所含的α-Fe相的比例为5体积％以下。\n\n  【0042】\n\n 在优选的实施方式中，稀土元素的浓度为26质量％以上且32质量％以下。\n\n  【0043】\n\n 在优选的实施方式中，Ga浓度为0.6质量％以下。\n\n  【0044】\n\n 本发明的磁性各向异性稀土-铁-硼合金粉末具有10μm以上且300μm以下的平均粒径，粉末颗粒中的稀土元素浓度具有50μm以下的粒径，粉末颗粒中的稀土具有大于50μm的粒径。 不要超过元素浓度。\n\n  【0045】\n\n 在一个优选的实施方案中，通过氢处理使其变脆。\n\n  【0046】\n\n 本发明的磁各向异性稀土-铁-硼基合金磁体粉末的稀土元素浓度为26质量％以上且32质量％以下，α-Fe相比率为5质量％以下，且Ga浓度为0.6质量％。  ％或更少，并且包括通过HDDR工艺形成的精细纹理。\n\n  【0047】\n\n 本发明的各向异性粘结磁体的制备方法包括以下步骤：制备通过上述任何一种制备方法制备的磁性各向异性磁体粉末，将所述磁性各向异性磁体粉末与粘合剂混合，并使其取向。 在磁场中形成。\n\n  【0048】\n\n 本发明的各向异性粘结磁体包含上述磁性各向异性各向异性稀土-铁-硼合金磁体粉末。\n\n  【0049】\n\n 本发明的电动机包括上述各向异性粘结磁体。\n\n  【0050】\n\n 具体实施方式\n\n 本发明人发现，要进行HDDR处理的母合金的金相组织对氢化处理所需的时间有很大的影响，从而完成了本发明。 本发明人对具有各种微观结构形态的中间合金进行了HDDR处理，并使用具有金相组织的中间合金，如图1（d）所示，评价了所得到的DDRD粉末的磁性能。 在这种情况下，即使主相R2，Fe14，B型晶体粗大，也可以在短时间内进行氢化处理，饱和磁化强度降低。 已经发现可以在不引起矫顽力的情况下提高矫顽力。\n\n  【0051】\n\n 图1（d）示意性地示出了用于生产本发明的磁性各向异性磁体粉末的母合金的金相组织。 该母合金具有这样的结构，其中，细的富稀土相（图中显示为黑点状区域）分散在较大的柱状晶体内。 可以通过使熔融的稀土-铁-硼合金与冷却部件接触并冷却熔融合金来形成这样的包含多个分散有富稀土相的柱状晶体的中间合金。  .. 合金的组成接近于R2，Fe14，B型晶体的化学计量比，并且可以根据需要添加各种元素。 例如，如果中间合金的组成用RxT100-z-y-zByMz（质量比）表示，则R选自稀土元素和钇。 至少一种选择的元素，T是Fe和/或Co，B是硼，并且M是添加元素。 当x，z和y为质量比时，优选分别满足26≤x≤32、0.95≤y≤1.20和0.01≤z≤2。  M是选自Al，Ti，V，Cr，Mn，Ni，Cu，Zn，Ga，Zr，Nb，Mo，In，Sn，Hf，Ta，W和Pb的至少一种。 这是一个元素。 此外，B的一部分可以用C，N，Si，P和/或S代替。\n\n  【0052】\n\n 在下文中，将参考图1（a）至1（d）详细描述用于制造中间合金的优选方法。\n\n  【0053】\n\n 首先，如图1（a）所示，使熔融合金L与冷却部件（例如，铜冷却板或冷却辊）接触，由此形成细小的一次晶体（R2  ■）。Fe14薄薄地形成了包含B）的第一组织层。 之后，或在形成第一纹理层时，通过将上述合金的熔融金属L进一步供给到第一纹理层上，在第一纹理层上形成柱状晶体（R2·Fe14）。  ）.B型晶体）（图1（b））。 柱状晶体是通过在继续供给熔体的同时在冷却速率低于开始时的冷却速率的条件下冷却合金熔体而产生的。 结果，如图1（c）所示，在相对缓慢地供应的合金熔体中的稀土元素不扩散到位于下方的大柱状晶体的晶界之前，便开始固化，并在内部生成稀土元素。 富相分散在其中的柱状晶体大量生长。 以这种方式，当在凝固的初始阶段形成初级晶体时，冷却速度相对较快，而当其后生长晶体时，冷却速度变慢，从而最终如图1（d）所示。 获得包含粗糙的柱状晶体的第二纹理层。\n\n  【0054】\n\n 本发明中的合金的第一织构层是不必要的，并且对于HDDR处理后的磁性粒子产生大的磁化是有害的。 然而，第一组织层的表面用作第二组织层的凝固核，并且还起控制第二组织层的冷却速率的重要作用，这在本发明中是必不可少的。 第一织构层与整个合金的体积比小于10％，更优选小于5％。 如稍后将描述的，在第一组织层和第二组织层之间存在短轴方向上的平均尺寸不同的差异。 因此，通过用显微镜观察合金的横截面，可以容易地测量每个组织层的厚度比，并且可以从该厚度比测量体积比。\n\n  【0055】\n\n 为了稳定地形成第二组织层，必须严格控制凝血速率。 如果凝固速度过高，则凝固组织变细，反之，如果凝固速度过低，则生成α-Fe。\n\n  【0056】\n\n 第一织构层主要由细R2，Fe14，B型晶体构成，并且其晶粒尺寸在短轴方向平均尺寸上小于20μm。 另外，不可能通过用偏光显微镜观察光学晶体的取向来确定R2，Fe14，B型晶体的晶体取向。\n\n  【0057】\n\n 另一方面，第二织构层主要由粗大的R2，Fe14，B型晶体构成，其结晶粒径在短轴方向平均粒径和长轴方向上为20μm以上。 平均尺寸为100μm以上。\n\n  【0058】\n\n 根据偏振显微镜，R2Fe14Fe14Fe14第二组织层中存在B型化合物的部分中的B型化合物的晶体学。 由于典型的C平面，观察到平行于冷却构件的杂散图案或条纹图案。  R2，Fe14，第二织构层中的B型化合物C轴与冷却构件大致平行地取向。 换句话说，该C轴与晶体短轴方向基本一致。\n\n  【0059】 \n\n更具体地，第二纹理层中的柱状晶体在短轴方向上的平均尺寸优选为20μm至110μm，更优选为60至110μm，并且最优选为70至100μm。 通过将第二织构层中的柱状晶体的短轴方向的平均尺寸设定在上述范围内，如后述的实施例那样，矫顽力和残留磁化强度均得到改善。\n\n  【0060】\n\n 当第一织构层和第二织构层以预定比例形成时，分别在短轴方向上具有不同平均尺寸的第一织构层和第二织构层表现出良好的磁性能。 如上所述，当第一纹理层与整个合金的体积比小于10％，更优选小于5％时，表现出良好的磁性能。\n\n  【0061】\n\n 富稀土相以平均50μm以下的间隔分散在形成第二织构层的R2，Fe14，B型晶体中。 间隔优选平均在20μm至50μm的范围内，并且更优选平均在30μm至50μm的范围内。\n\n  【0062】\n\n 在本说明书中，第一织构层和第二织构层中的R2，Fe14，B型晶体的短轴方向的平均尺寸通过以下的测定方法来定义。 即，通过偏振显微镜观察合金的厚度方向的截面（参照图17和图18），并设定与冷却部件接触面平行的切割线。 然后，对该切割线的每条R2，Fe14，B型晶体的数量（No）进行计数。  R2，Fe14，B型晶体的短轴方向的平均尺寸通过切割线长度（Lo）由Lo / No表示。\n\n  【0063】\n\n 在本说明书中，短轴方向上的平均尺寸沿着从冷却部件接触表面沿厚度方向平移的切割线测量，并且在第一组织层中该值小于20μm并且在20μm以上的范围内。 是第二层组织。 然后，可以基于每个纹理层的厚度与整个合金的厚度之比来计算上述体积比。\n\n  【0064】\n\n 第二织构层中的R2，Fe14，B型晶体的短轴方向的平均尺寸定义为通过上述测量方法测得的短轴方向尺寸的合金厚度方向。 它是中心的值。\n\n  【0065】\n\n 另外，第二织构层中的富稀土相的间隔通过以下的测定方法求出。\n\n  【0066】\n\n 当通过反向散射电子束图像观察到合金在厚度方向上的截面时（图24至26），观察到富稀土相为白色。 在该反射电子束图像上，设置平行于冷却构件接触面的切割线。 计数穿过白色富稀土相的切割线的数量N，并且从切割线长度L，可以获得稀土富集间隔＝ L / N。 将切割线插入的位置设置在合金在厚度方向上的中心，并计算从多个视野中获得的值的平均值。\n\n  【0067】\n\n 当形成第一组织（其是精细的初级晶体的聚集体）时，熔融合金的冷却优选在10℃/ s以上且1000℃/ s以下，过冷100℃以上且300℃以下的条件下进行。  ..  Fe的预冷可以通过过冷来抑制。 另一方面，在形成第二纹理层时，优选在供给熔融金属的同时以1℃/ s以上且500℃/ s以下的条件冷却熔融合金。\n\n  【0068】\n\n 由于通过将熔融金属供应到冷却构件上的速率来调节冷却速率，因此重要的是采用能够调节熔融金属供应量的冷却方法以获得如上所述的合金结构。 更具体地，为了获得本发明的合金结构，期望将熔融金属以少量均匀地供应到冷却构件（模具等）上。 因此，优选进行冷却方法，其中将熔融金属制成液滴并分散/喷雾。 例如，可以采用通过将气体喷射到熔融金属流上来喷射气体的方法或通过离心力使液滴散射的方法。\n\n  【0069】\n\n 为了更容易地控制第二组织层的冷却速度，可以采用以下方法。 也就是说，这是在形成第一薄纸层的阶段在第一薄纸层中形成空隙以减小第一薄纸层的实质传热横截面积的方法。 结果，即使在形成第二薄纸层时不将熔融金属的供给量调节为较小，第二薄纸层的冷却速度也随着传热面积的减小而降低。 可以同时进行在第一薄纸层中的空隙的形成和熔融金属的供给量的调节。\n\n  【0070】\n\n 参考图27（a）至27（e），将描述在第一纹理层中形成空隙的情况下用于制造中间合金的优选方法。\n\n  【0071】\n\n 首先，如图27（a）所示，在最早的阶段将熔融金属滴供给到冷却部件上，生成最细的R2，Fe14，B型结晶。 图27（b）示出了形成空隙的状态。 在凝固层上存在下一个供应的熔融金属。\n\n  【0072】\n\n 当供给熔融金属时，如图27（c）所示，在第一织构层上开始形成大的R2，Fe14，B型晶体，从而开始形成第一织构层和第二织构层。 过渡到。 图27（d）和27（e）示出了第二组织层如何生长。 甚至在固化完成后，冷却表面上的空隙仍然保留。\n\n  【0073】\n\n 为了在第一薄纸层中形成空隙，可以通过喷涂来提供具有相对较高粘度的熔融金属。 具体地，存在一种方法，其中在常规合金铸造期间将熔融金属的温度降低至低于1450℃，使得到达冷却构件时的温度为约1300℃以下。\n\n  【0074】\n\n 为了控制熔融金属的温度，可以采用在雾化成液滴之后在飞行期间辐射热量的方法。 具体地，可以采用将充满惰性气体的炉中的气氛保持在大约大气压的方法或用惰性气体喷射熔融金属的方法。 通常将氩气用作惰性气体，但是也可以使用氦气。 氦气的使用促进了熔融金属液滴的散热。\n\n  【0075】\n\n 可以通过冷却构件与母合金之间的接触表面来显示第一纹理层中的空隙的存在比率。 通过观察母合金在厚度方向上的截面结构，可以容易地区分与冷却构件和空隙的接触表面，因此空隙所占的长度可以表示为与冷却面的长度的比率。 在本发明的合金中，孔隙率在20％至70％的范围内。\n\n  【0076】\n\n 本发明的熔融金属冷却方法的另一个重要点是以高收率将所产生的熔融金属的液滴收集在冷却部件上（有效地利用它来形成凝固的合金）。 为了提高产量，可以采用利用气体喷雾将熔融金属液滴喷洒到扁平冷却构件上的方法，或者将熔融金属液滴分散在旋转的圆筒形鼓状冷却构件的内壁上的方法（离心铸造法）。  ）是可取的。\n\n  【0077】\n\n 具有上述结构的凝固合金尚未通过带钢铸造法和合金铸锭法等常规方法获得。 下面将描述通过常规方法生产的凝固合金（母合金）的晶体生长。\n\n  【0078】\n\n 首先，将参考图3至图6描述通过带式铸造方法的晶体生长。 在带钢铸造法中，由于冷却速度高，因此与高速旋转的冷却辊等冷却部件接触的熔融合金L从接触面迅速冷却而凝固。 为了获得高冷却速率，必须减少熔融合金L的量，并且由于带钢铸造装置的结构，不能顺序地供应熔融金属。 结果，冷却构件上的熔融金属L的厚度在冷却过程中不会增加并且基本恒定，并且晶体生长从具有恒定厚度的熔融金属L内部的与冷却构件的接触表面快速进行。 将会完成。 如图2（a）〜图2（c）所示，由于冷却速度高，因此柱状晶体的短轴方向的尺寸变小，最终得到的凝固合金具有微细的金属组织。 柱状组织内部不存在富稀土相，而是分散在晶界内。 在带状铸造合金中，晶粒的尺寸太小，使得晶体取向排列的区域较小，并且存在每个粉末晶粒的磁各向异性随用于粘结磁体的粉末晶粒尺寸减小的问题。\n\n  【0079】\n\n 接下来，参考图3（a）至3（d），将描述通过常规的锭法的晶体生长。 在铸锭法中，由于冷却速度比较慢，因此与冷却部件接触的熔融合金L从接触面缓慢冷却而凝固。 在静态熔融金属L内部，首先，在与冷却部件的接触表面上生成Fe初晶，然后，如图3（b）和（c）所示，Fe枝晶生长。  .. 最后，包晶反应形成了R2Fe14B型结晶相，但使磁性降低的α-Fe相仍保留在内部。 成为。 尽管凝固合金的金相组织是粗大的，但是仍然保留了大量的粗大的α-Fe相，使得体积比超过2％。 为了减少α-Fe，需要进行均质化处理。 具体而言，使锭合金中的α-Fe相和R2，Fe17相扩散，并尽可能地消除这些相，从而实质上消除R2  Fe14：必须具有由B相和富R相这两个相构成的结构。 均质化热处理在除氮气以外的惰性气体气氛中或在真空中于1100℃至1200℃的温度范围内进行1至48小时。 这种均质化处理存在制造成本增加的问题。 另一方面，为了抑制α-Fe的生成，需要使原料合金中所含的稀土元素的组成量比化学计量比足够大，但如果稀土元素的含量变多，则最终 存在的问题是，所获得的磁体的剩余磁化强度降低并且耐腐蚀性劣化。\n\n  【0080】\n\n 本发明中使用的中间合金（见图1和27）具有即使稀土含量接近化学计量比也难以产生α-Fe的优点。 因此，可以比以前更多地减少稀土含量。 此外，本发明中使用的母合金的主相尺寸大于带状铸造合金的主相尺寸，从而其通过HDDR处理可以表现出高的磁各向异性，并且适合用作磁各向异性磁体粉末的母合金。 是的。\n\n  【0081】\n\n 根据具有这种结构的中间合金，即使将稀土元素的浓度设定在26质量％以上且32质量％以下的范围内，热处理前的中间合金中的α-Fe也被包含。 该相是微细的，并且可以将该比例抑制到5体积％以下。 因此，即使不进行通常的铸锭合金所必需的母合金的均质化热处理，也不会不利地影响HDRD粉末的磁特性，特别是矫顽力。\n\n  【0082】\n\n 接下来，将说明当对具有各种结构结构的上述母合金进行HDDR处理时引起何种差异。\n\n  【0083】 \n\n图4（a）至4（c）分别示意性地示出了在HDDR处理之前的时间T1处的本发明的母合金，常规的铸锭合金和带铸合金的结构。 如图所示，常规铸锭合金中的R2Fe14B型晶相较粗，而在带铸合金中R2Fe14B型相较粗。 晶相的短轴晶粒尺寸小。 此外，在本发明的中间合金中，R2，Fe14，B型结晶相的平均粒径为R2，Fe14 其特征在于，其比R型结晶相的平均粒径大，且富稀土相分散在R2，Fe14，B型结晶相的内部。\n\n  【0084】\n\n 图5（a）至（c）分别为本发明的母合金，常规的铸锭合金和带铸合金的示意图，示意性地示出了在HDDR工艺开始之后的时间T2处的结构（T1 ＜T2  ）。 图中的斜线表示由于氢化而发生反应的部分。 由于氢通过主相中的晶格缺陷扩散和由氢吸收在表面层中产生的裂纹而进行该反应。 由于氢不仅容易通过晶格缺陷扩散而且还容易通过晶界扩散，因此氢化反应从R2，Fe14的晶界部分进行。 继续。\n\n  【0085】\n\n 图6（a）至（c）分别为本发明的母合金，常规的铸锭合金和带铸合金的示意图，示意性地示出了HDRD工艺开始后的时间T3处的组织（T2 ＜T3  ）。 从图6（a）和6（b）可以看出，氢化反应在短轴径较小的带状铸造合金中快速进行。 另一方面，在常规的铸锭合金中，大的R2，Fe14，B型晶粒具有许多部分，其中氢化反应没有充分进行。 另一方面，在本发明的母合金中，尽管晶粒尺寸大，但是氢化反应在较早的阶段在宽范围内进行。 如上所述，在根据本发明的中间合金中氢化反应迅速进行的原因是，富稀土相分散在R2·Fe14的内部。 相信这是由于形成。\n\n  【0086】\n\n 图7（a）至7（c）示意性地示出了在HDDR工艺过程中的本发明的母合金，常规的铸锭合金和带铸合金的结构。 示意性地示出了在开始HDDR处理之后的时间T4处的组织（T3 ＜T4，T4例如为30至60分钟）。 在常规的锭合金的情况下，在该阶段中，由于氢化的反应没有进行的部分，但是在根据本发明的母合金中，氢化反应几乎完全进行。 在氢化反应已经进行的区域中，通过随后的适当的脱氢处理产生上述的重结晶织构。\n\n  【0087】\n\n 图8是示出在HDDR处理中的氢化处理时间T与剩余磁通密度Br和矫顽力HcJ之间的关系的图。 图中的◯，●和▲数据分别涉及根据本发明的合金，常规的铸锭合金和带铸合金。 合金的组成为：Nd：27.5质量％，Zr：0.1质量％，B：1.0质量％，Fe：余量。 在HDDR处理之前，在0.3MPa的氢气氛中进行氢脆化处理2小时，然后粗粉碎成425μm以下的尺寸。 后续HDRD处理的条件如下。\n\n  【0088】\n\n 首先，在氢气气氛（850℃）中在0.1MPa的压力下进行图中所示的时间的氢化处理，然后用氩气置换5分钟。 接着，在氩气气氛中以1.0kPa的压力在850℃下进行30分钟的脱氢处理，然后冷却至室温。\n\n  【0089】\n\n 从图8可以看出，在加氢处理的初始阶段，矫顽力HcJ随着处理时间的增加而增加，但最终达到饱和。 即使当加氢处理时间为1小时或更小时，根据本发明的合金也表现出足够高的矫顽力。 这意味着氢迅速扩散到粗粉碎的粉末中，并且氢化反应在早期完成。 另一方面，在带状铸造合金和铸锭合金的情况下，矫顽力要花费很长时间才能达到饱和水平。 特别地，在锭合金的情况下，除非进行2小时以上的氢化处理，否则不能获得足够的矫顽力。\n\n  【0090】\n\n 剩余磁通密度Br随着加氢处理时间的经过而显示出峰值，然后随着加氢处理时间的增加而降低。 这是因为如上所述，氢化时间越长，氢化和脱氢的可逆反应被重复多次，并且母合金中的晶体取向的记忆逐渐消失。\n\n  【0091】\n\n 当使用本发明的合金时，与其他合金的情况相比，可以以更短的加氢处理时间获得足够高的矫顽力HcJ，因此矫顽力HcJ 可以得到兼具剩磁Jr的HDDR粉末。\n\n  【0092】\n\n 图9是示出剩余磁化强度Jr和矫顽力HcJ对平均粒径的依赖性的图。 图中的数据◯，●和▲分别涉及本发明的合金、，分别是常规的铸锭合金和带铸合金。\n\n  【0093】\n\n 当平均粉末粒径大时，矫顽力相对较低，但是在根据本发明的合金的情况下，剩磁Jr 认为这是因为在本发明的情况下，中间合金的晶粒尺寸大，并且在较宽的范围内形成具有均匀的晶体取向的再结晶织构。 此外，在本发明的情况下，即使平均粉末粒径增加，矫顽力也不会降低。\n\n  【0094】\n\n [示例1]\n\n 首先，通过离心铸造法制造具有下表1所示的组成的母合金。 具体地，稀土-铁-硼合金的熔融金属（温度：约1300℃）通过离心力散布在旋转的圆筒形冷却构件的内部。 因此，生产出具有如图1（d）所示的结构的母合金。 表1中记载的各组成的数值为质量比。\n\n  【0095】\n\n 【表格1】\n\n  【0096】\n\n 图17和18示出了根据本发明的中间合金的极化显微照片。 图17示出了在与冷却构件的接触表面附近的组织截面，并且图18示出了在厚度方向上的中心处的组织截面。 各图的上部表示冷却面，下部表示冷却面（自由面）侧。 从该图可以看出，在距接触表面约100μm的区域中，但在距接触表面约100μm的内侧（第二结构层）的区域中形成有微晶结构（第一结构层）。 形成大的柱状晶体。 另一方面，在自由表面附近，部分观察到精细的结构，但是大多数是粗糙的晶体。 合金板的厚度为5至8mm，并且大部分由粗糙的第二柱状晶体结构层组成。 第一组织层和第二组织层之间的边界取决于位置而具有透明部分和不透明部分，但是如上所述，第一组织层距与冷却构件的接触表面约100μm。 在合金板的厚度方向上约占百分之几的区域内形成。 根据冷却条件，第一纹理层的厚度可以为合金板厚度的约5％，但是优选小于10％。\n\n  【0097】\n\n 对不同稀土含量的合金样品的微观结构的比较表明，稀土元素浓度越高，晶体尺寸越小。\n\n  【0098】\n\n 观察粗晶粒的组成图像证实了富稀土相被分散。 随着母合金中稀土含量的增加，更多地观察到分散在粗晶粒中的富稀土相。 另外，未观察到α-Fe相。\n\n  【0099】\n\n 接下来，通过氢脆将具有上述各种组成的中间合金粗碎。 具体地，在氢气氛中在200℃下进行氢脆化处理100分钟，然后在玛瑙研钵中破碎并过筛，以获得尺寸为425μm或更小的粗粉碎粉末。\n\n  【0100】\n\n 之后，对约10克的粗粉碎粉末进行HDDR处理。 具体而言，进行氢化处理（升温速度：15℃/ min，处理温度：800℃，处理时间：1小时，气氛：氢气氛）→气氛置换（处理温度：800℃，处理时间：5分钟）。  ，气氛：氩气，氩气流量：5升/分钟）→脱氢处理（处理温度：800℃，处理时间：1小时，气氛：氩气，氩气压力：2kPa）。\n\n  【0101】\n\n 对经过HDDR处理的合金进行筛分，然后使用VSM评估每种晶粒尺寸的磁特性。 将样品与石蜡一起在磁场中加热和冷却，固定，并用约5 MPa的脉冲磁场磁化，然后测量退磁曲线。\n\n  【0102】\n\n 图10示出了No.3至No.5的每个样品的Nd浓度的粗粉。 曲线图的纵轴是Nd浓度（Nd浓度，质量％），横轴是平均粉末粒径（粒径，μm）。  Nd含量高的样品（例如4号样品和5号样品）中，细粉中的Nd浓度（例如，粒径为50μm或更小）低于粗粉中的Nd浓度。 另一方面，图中未示出的B和Zr的浓度未显示出粒度依赖性。\n\n  【0103】\n\n Nd浓度对晶粒尺寸的依赖性与常规锭合金和带钢铸造合金中Nd浓度对晶粒尺寸的依赖性相反。 即，在常规的锭合金或带铸合金的情况下，细粉中的Nd浓度（例如，粒径为50μm或更小）通常高于粗粉中的Nd浓度。\n\n  【0104】 \n\n在常规的铸锭合金和带钢铸造合金中，诸如Nd之类的稀土元素以高于R2，Fe14B型晶体的化学计量比的浓度存在于晶界。 在相晶粒中，其存在的量由R2Fe14B型晶体的化学计量比确定。 氢脆化使稀土元素浓度高的晶界部分扩展，并且更容易从该部分开裂，因此，由氢脆产生的粗粉中的微粉（粒径：50μm以下）源自晶界。 它可能包含细粉，结果，稀土含量趋于相对较高。\n\n  【0105】\n\n 另一方面，在根据本发明的中间合金中，由于富稀土相分散在粗晶粒内部，因此晶界处的稀土元素浓度不必高于分散有富稀土相的主相中的浓度。 认为处于无法说的状态。 此外，在中间合金的主相晶粒内部，富稀土相以约50μm（例如10μm）或更小的间隔分散，因此在小的粉末颗粒中富稀土相可能很小。 也有。\n\n  【0106】\n\n 综上所述，在根据本发明的中间合金的粗粉碎粉末中，平均粒径为50μm以下的细粉末颗粒中所含的稀土元素的浓度等于或小于平均粒径大于50μm的粉末颗粒中所含的稀土元素的浓度。 它变成了。 如图3所示，当中间合金的稀土含量高时，这是显着的。\n\n  【0107】\n\n 将氢脆化/粗粉碎后的合金在真空中于800°C热处理1小时，以从合金中释放出氢，然后使用VSM通过粒度（外部磁场Hex：1.2MAm-1\n\n  【0108】\n\n 图11示出了样品编号1至4的磁化强度（磁化强度，特斯拉）的粒度依赖性。\n\n  【0109】\n\n 磁化强度具有粒径依赖性，并且粒径越大，磁化强度往往越小。 由于每种晶粒尺寸几乎没有组成变化，因此认为晶粒尺寸越大，晶体取向度越低。\n\n  【0110】\n\n 图12示出了母合金中（HDRD处理之前的原料粉末中）的Co含量对磁化的影响，图13示出了母合金（HDRD处理之前的原料粉末中）的Ga含量被磁化了。 显示效果。 图14示出了在HDDR处理之后的1至4号样品的磁特性。 可以看出，即使样品不包含Co和Ga（Nd-Fe-B-Zr合金），如果Nd含量高，也可以获得高磁化强度。\n\n  【0111】\n\n 图15示出了HDRD处理后的粉末中Co添加的效果。 当Co的添加量为2原子％时（图中的数据“○”），磁化降低，但矫顽力显着增加。 当Co的添加量为5原子％时（图中的数据“□”），磁化的减小很小，但是矫顽力的改善程度也很小。\n\n  【0112】\n\n 图16示出了在HDRD处理后添加Ga对粉末的影响。 可以看出，Ga的添加对剩余磁化几乎没有影响，但是矫顽力随Ga的添加量而增加。\n\n  【0113】\n\n 从这些图中可以看出，添加Co或Ga并没有特别有助于改善根据本发明的粗粉碎粉末的磁化强度。 因此，根据本发明，不必为了改善磁化而添加Co或Ga。\n\n  【0114】\n\n 常规上，为了获得HDDR粉末，认为向母合金中添加Co和Ga是优选的，但是从上述实验结果显而易见，在本发明中，添加了Co和Ga。 即使不存在，也可以获得足够优异的磁性各向异性磁铁粉末。 但是，添加Co对于降低磁特性的温度依赖性是有效的，并且添加Co对于提高耐候性是有用的，因此，根据用途优选添加Co。 例如，当将Co添加到稀土R含量为32质量％的中间合金中时，从耐候性的观点出发，期望将Co含量设为1质量％以上。\n\n  【0115】\n\n 如上所述，在本发明的情况下，添加Ga可以在某种程度上改善磁性能，但是对于实现本发明的目的不是必须的。\n\n  【0116】\n\n 通过将这样产生的HDDR粉末与已知的粘合剂混合并在磁场中成型，可以获得具有优异的磁体特性的各向异性粘结磁体。 该各向异性粘结磁体可以应用于各种电动机和致动器的永磁体，并且可以表现出优异的特性。\n\n  【0117】\n\n [示例2]\n\n 首先，制造与上述表1所示的10号试样的组成相同组成的带钢铸造合金和铸锭合金。 接下来，通过氢化使每种合金脆化并且粗粉碎至425μm以下。 此后，在以下条件下执行HDDR处理。\n\n  【0118】\n\n 首先，在将炉内部抽真空后，用氩气恢复压力，并且在使氩气在大气压（0.1MPa）下流动的同时将样品加热至850℃。 接下来，在将样品温度保持在850℃的同时，停止氩气的流动并且开始氢气的流动。 每分钟将氢气以相当于炉子内部容积约20％的量引入炉子并排出（压力保持恒定）。 保持这种状态2小时后，停止氢气的导入，将氩气导入炉内，同时保持炉内温度大致恒定。 引入这种氩气5分钟，并且用氩气代替炉中的气氛。 此外，通过旋转泵 --将炉内的压力降低，将炉内的氩气压力降低至2kPa，并维持该状态1小时。 然后，将氩气供应到炉中，将炉中的氩气的压力升高至大气压，并执行冷却步骤。\n\n  【0119】\n\n 该HDRD工艺的特征在于，在非氢气气氛中将样品加热至高温（550℃以上且900℃以下），然后将氢供应至炉中以开始氢化工艺。 通过在充分提高合金温度之后将氢引入炉中，可以防止HDRD工艺过度进行。 由于本发明的中间合金比常规合金更容易与氢反应，因此优选在温度升高至高温之前不与氢反应，并稍微延迟HDRD处理的进行。\n\n  【0120】\n\n 通过筛子对通过上述HDDR处理得到的粉末状样品进行分级，然后使用VSM对每种粒径测量样品的剩磁Jr和矫顽力HcJ 测量结果示于图2中。 比较根据本发明的中间合金（本发明），带材铸造合金（比较例1）和铸锭合金（比较例2）的测量结果，根据本发明的中间合金的磁性能在很大的粒径范围内优异。 我明白那个 此外，可以看出，通过进行上述HDDR处理，本发明的中间合金的磁化增加。\n\n  【0121】\n\n 接下来，图21示出了在上述HDRD处理之前将母合金在1120℃下热处理8小时时的测量结果。 通过在高于HDDR工艺之前的HDDR工艺达到的温度的温度下进行热处理，获得了改善了HDDR工艺之后的剩磁Jr的效果。\n\n  【0122】\n\n [例3]\n\n 制备质量比为27.0Nd-1.0Dy-15.0Co-0.6Ga-0.1Zr-1.0B-平衡铁的合金熔体，通过离心雾化将该熔体沉积在冷却板上，然后 ）产生了。 此时，在任何条件下，在与冷却构件的接触表面上形成约50％的空隙。 通过改变熔融金属的喷射量来调节在冷却板上的沉积速率。 随着喷射量的增加，沉积速率也增加并且熔融合金的冷却速率降低。 相反，当喷雾量减少时 做，沉积速率降低，因此熔融合金的冷却速率增加。 因此，以各种冷却速率制备中间合金。\n\n  【0123】\n\n 用显微镜观察这些中间合金的截面，并通过图像处理测量主相的晶粒尺寸和富稀土相的分散间隔。 具体地，通过使用平行于冷却基板的切割线的切割方法来确定分散间隔。\n\n  【0124】\n\n 制备母合金后，不进行特殊的高温热处理就进行氢脆化，将其粗粉碎为425μm以下。 之后，执行HDDR处理。  HDDR处理如下进行。\n\n  【0125】\n\n 首先，将样品加热到800℃并在大气压（0.1MPa）下在氢气中在炉中流动的同时在800℃下保持2小时。 接下来，停止引入氢气，而是将氩气引入炉中。 在将这种氩气引入5分钟以用氩气代替炉中的气氛之后，将炉中的氩气的压力降低至1kPa，并维持该状态1小时。 然后，将氩气供应到炉中，将炉中的氩气的压力升高至大气压，并执行冷却步骤。 该HDRD方法与实施例2中的HDRD方法的不同之处在于在氢气气氛中加热样品。\n\n  【0126】\n\n 图22是示出根据本发明的中间合金中主相的短轴和HDDR处理后的磁特性对 沉积率的依赖性的图。 从该图可以看出，随着沉积速率的增加，主相的短轴也增加。 如果沉积速率超过60μm/ s并增加，则磁性能劣化，因此优选将沉积速率设定为60μm/ s以下。\n\n  【0127】\n\n 图23（a）是示出根据本发明的中间合金中主相的短轴与HDDR处理后的磁性能之间的关系的图，并且图23（b）是该中间合金中的富稀土相的分散区间。 图3是示出在HDDR处理之后的磁特性与HDDR处理之间的关系的图。\n\n  【0128】\n\n 图24至图26分别是在通过冷却熔融金属制备母合金时的合金沉积速率为34μm/ s，47μm/ s和62μm/ s的情况下的本发明的母合金的反射电子束图像。 这是一张照片。 从这些照片可以看出，母合金的沉积速率越大，富稀土相的间距（富R的空间）越大。 具体地，当合金沉积速率为34μm/ s，47μm/ s和62m / s时，平均分散间隔分别为19μm，43μm和56μm。 照片的深色部分显示主要相，明亮的部分显示富含稀土的相。 黑色部分显示α-Fe。 照片上8毫米的长度对应于实际的50微米。\n\n  【0129】\n\n 【发明效果】 \n\n根据本发明，即使不添加昂贵的Ga，也可以有效地进行HDRD处理，并且由于可以产生磁各向异性优异的大的再结晶织构，因此矫顽力HcJ和剩余磁化强度Jr都可以得到改善。 此外，由于可以省略母合金的均质化热处理，并且可以缩短HDDR工艺中的加氢处理时间，因此可以降低制造成本和制造时间。\n\n [附图简述]\n\n 图1（a）至1（d）是示意性示出形成用于制造本发明的磁性各向异性磁体粉末的中间合金的金相组织的过程的截面图。\n\n 图2（a）至图2（c）是示意性地示出通过带式铸造法形成中间合金的金属组织的过程的截面图。\n\n 图3（a）至3（d）是示意性地示出通过传统的铸锭法形成中间合金的金相组织的过程的截面图。\n\n 图4（a）至（c）分别示意性地示出了在HDDR处理之前的时间T1处的本发明的母合金，常规的铸锭合金和带铸合金的结构。\n\n 图5（a）至5（c）是示意性地示出了在开始HDDR处理之后的时间T2处的本发明的母合金，常规的铸锭合金和带铸合金的结构的图。  T1 r和矫顽力HcJ之间的关系的曲线图。\n\n 图9是示出剩磁Jr和矫顽力HcJ之间的关系的曲线图。\n\n 图10是表示3号〜5号样品的粗粉碎粉体的Nd浓度与粒径的关系的图。 曲线图的纵轴是Nd浓度（Nd浓度，质量％），横轴是平均粉末粒径（粒径，μm）。\n\n 图11是表示1号〜4号样品的粗粉碎粉的粗大粒径的磁化强度的图。 图的纵轴是磁化强度J（Magnetization，Tesla），横轴是粉末平均粒径（颗粒尺寸，μm）。\n\n 图12是表示3号，6号和7号样品的粗粉碎粉末的磁化强度的粒径的图。 图的纵轴是磁化强度J（Magnetization，Tesla），横轴是粉末平均粒径（颗粒尺寸，μm）。\n\n 图13是示出对于No.7、10、12和13的每个样品的粗粉碎粉末的磁化的图。 图的纵轴是磁化强度J（Magnetization，Tesla），横轴是粉末平均粒径（颗粒尺寸，μm）。\n\n 图14是示出在HDDR处理之后的样品No.1至4的磁特性的图。 该图的纵轴是剩磁Jr（剩磁，特斯拉）和矫顽力HcJ（固有矫顽力，MAm-1），横轴是粉末的平均粒径（颗粒）。 尺寸（μm）。\n\n 图15是示出在HDDR处理之后的样品编号3、6和7的磁特性的图。 图的纵轴为剩磁Jr（剩磁，特斯拉）和矫顽力HcJ（固有矫顽力MAm-1），横轴为粉末的平均粒径（颗粒 尺寸（μm）。\n\n 图16是示出在HDDR处理之后的样品编号7、10、12和13的磁特性的图。 图的纵轴是剩磁Jr（剩磁，特斯拉）和矫顽力HcJ（固有矫顽力MAm-1），横轴是粉末的平均粒径（颗粒）。 尺寸（μm）。\n\n 图17是根据本发明的中间合金的偏振光显微照片，示出了在与冷却构件的接触表面附近的显微组织横截面。\n\n 图18是根据本发明的中间合金的偏振光显微照片，示出了在厚度方向上的中心处的组织的截面。\n\n 图19（a）至19（e）是示出HDDR处理的示意图。\n\n 图20是示出本发明的母合金，常规的铸锭合金和带铸合金在进行HDDR处理时的磁特性的图。 图的纵轴是剩磁Jr（剩磁，特斯拉）和矫顽力HcJ（固有矫顽力MAm-1），横轴是粉末的平均粒径（颗粒 尺寸（μm）。\n\n 图21是示出当在1020℃下进行热处理和HDRD处理时，本发明的母合金，常规铸锭合金和带铸合金的磁性能的图。 图的纵轴是剩磁Jr（剩磁，特斯拉）和矫顽力HcJ（固有矫顽力，MAm-1），横轴是粉末的平均粒径（颗粒 尺寸（μm）。\n\n 图22是示出根据本发明的中间合金中主相的短轴的沉积速率依赖性和HDDR处理之后的磁特性的图。 图的纵轴是主相的平均短轴（晶粒的宽度[μm]），剩磁Jr（剩磁Tesla）和矫顽力HcJ（固有矫顽力MAm-1水平轴为 沉积率(μm/ s )\n\n 图23（a）是表示本发明的中间合金中的主相的短轴与HDDR处理后的磁特性之间的关系的图，图23（b）是该中间合金中的富稀土的相间隔。 图7是示出与HDDR处理后的磁特性的关系的图。  （a）的曲线图的横轴是主相的平均短轴，（b）的曲线图的横轴是富稀土相的分散间隔。\n\n 图24是本发明的中间合金的背散射电子图像照片，当冷却熔体以制造中间合金时，合金沉积速率为34μm/ s。\n\n 图25是当冷却熔体以生产母合金时合金沉积速率为47μm/ s时本发明的母合金的背散射电子图像照片。\n\n 图26是在冷却熔体以制造母合金时合金沉积速率为62μm/ s的情况下的本发明的母合金的背散射电子图像照片。\n\n 图27（a）至（e）是示意性示出形成用于生产本发明的磁性各向异性磁体粉末的母合金的金相组织的过程的截面图。\n\n [符号说明]\n\n 1母合金\n\n 2晶向\n\n 3个晶界\n\n 4粗粉\n\n 5粉末颗粒\n\n 7重结晶质地\n\n 9合金粉（HDDR粉）');
INSERT INTO `os_patent_instruction_text` VALUES (12976, 22805, '【0001】\n\n【発明の属する技術分野】\n\n本発明は、ジェット流の媒体に油を用いて成形体の加工を行うR-Fe-B系焼結磁石の製造方法に関する。\n\n【0002】\n\n【従来の技術】\n\n従来から、ウオータージェット技術において、被加工物の切断や研磨に、ノズルからの各種メデイア噴射あるいは超高圧水の噴射や液中高圧水噴射により発生したキャビテーション効果が活用されてきた(特許文献1あるいは特許文献2)。また、水中での利用方法として、高圧水のキャビテーション効果を利用した方法が水中洗浄およびバリ取りなどの加工に用いられている。また、大気中での利用方法として、高圧水の負圧を利用したウオーターブラストや空気圧を利用したサンドブラストによる塗膜やコーティングの剥離除去、素地調整、研削などの表面処理が行われている。また、高圧水のみを利用した剥離処理も行われている。\n\n【0003】\n\n一方、現在、磁気特性のもっとも高いNd-Fe-B系永久磁石は、あらかじめ所定の組成になるように製作した溶解インゴットをジェットミルなどの粉砕機で微粉砕し、それをプレス機で押し固めて成形体を作っていた。この粉砕、成形の工程では微粉砕により表面積の大きくなった微粉が酸素を吸収し酸化しやすいため、出来上がった成形体は酸素をかなりの量含むことになり、これにより磁気特性の低下が発生した。これを対策するために、磁石の原料となる微粉砕した粉を直接鉱物油内に落下貯蔵し、鉱物油との混合によりスラリー状となったものをそのまま成形することにより外部からの酸素をほとんど取り込まない成形体を得る。次に、成形体を、真空またはアルゴンガスや窒素ガスまたはそれらの混合ガスを雰囲気とする焼結炉の中で焼結を行い、さらに400 ℃〜900 ℃の真空熱処理炉において加熱し、磁石内の組織を整えることにより、目的の保磁力を発生させることのできる焼結磁石素材を得る。この素材を切断または研磨して目的の寸法に仕上げることにより、永久磁石製品を製造する工程がとられていた(特許文献3)。\n\nまた、腐食作用を有するイオンを含有する流体中に硬質粒子を分散させ、この流体をノズルから噴出させてなる高速ジェット流を使用する加工方法がある(特許文献4)。\n\n【0004】\n\n【特許文献1】\n\n特開平9-173916号公報(第1頁)\n\n【特許文献2】\n\n特開2002-224961号公報(第3頁、図1)\n\n【特許文献3】\n\n特開平10-233306号公報(第3〜4頁)\n\n【特許文献4】\n\n特開平1-228113号公報(第2頁)\n\n【0005】\n\n【発明が解決しようとする課題】\n\nしかし、単一形状の製品を大量に生産する場合は別であるが、多品種少量生産を行う場合、製品ごとに専用の金型を準備していると、多種の金型費や治工具費の影響で、製品の製造原価が大変高価となるため、市場での価格競争力を低下させてしまう。そこで、この対策として、一定形状の焼結·熱処理済み素材をあらかじめ準備し、これを出発点として、切断や研磨の加工工程を経ることにより目的寸法の磁石製品を生産していた。この場合、焼結後の永久磁石素材は硬度が高いため、通常の切削による加工は難しいことから、ダイヤモンド砥石を用いた研磨や切断の方法により素材を目的の寸法に仕上げていた。\n\n【0006】\n\nこのような方法を用いると、最終製品の形状や大きさにかかわらず、同一形状の素材から切り出すため、切断や研磨後の製品にならない端材がはじめの素材体積の30%〜60%にもなった。Nd-Fe-B系焼結磁石は材料費が高価であるにもかかわらず、研磨や切断により切り落とされた端材は粉末状の研磨材との混合物となってしまうため、端材を再利用するためには、研磨材を分離する工程が必要となり、コストがさらに余計にかかるため端材の再利用は行われていなかった。従って、複雑な形状をした磁石製品を製作する場合、研磨や切断により除去される素材部分の体積が増大することになり、材料が無駄になり製造コ\n\nストが増加するという問題があった。\n\n【0007】\n\n【課題を解決するための手段】\n\n上記の問題を解決するために考え出された本発明のR-Fe-B系焼結磁石の製造方法は、R-Fe-B系焼結磁石用合金粉(RはYを含む希土類元素の少なくとも1種であり、Ndを含む)と油(鉱物油、合成油及び植物油から選ばれる少なくとも1種の油である)からなる成形体の成形、得られた成形体の加工、加工後の成形体の脱油及び脱油後の成形体の焼結工程を有するR-Fe-B系焼結磁石の製造方法において、前記油は前記成形体の酸化を防止するものであり、前記成形体の加工工程が前記油と同じ油の高圧ジェット流を前記成形体に噴射して加工する工程を含み、前記加工後の成形体表面が前記油で覆われていることを特徴とする。\n\n  本発明において、前記ジェット流は進行方向に直交する断面の直径が0.05 mmから3.0 mmの範囲にあり、圧力が50 MPaから400 MPaの範囲にあり、前記油は室温での動粘度が1.1×10-5 m2/s以下の非酸化性の油であることが好ましい。\n\n【0008】\n\n本発明では、成形体は、前記の油と磁粉の混合物であるスラリーをプレスして作製したものであるため、成形体は表面が鉱物油等で覆われている。成形体に、スラリー中の油と同じ成分を持つ鉱物油等の高圧ジェット流を噴射することにより、成形体を切断する方法を用いた。これにより、成形体は切断されるときに、切断後の表面が常に鉱物油等で覆われているため、成形体の酸化を防止することができ、かつ、鉱物油等の噴射により成形体表面が冷却されるため、過熱による自然発火や変質を防止することができる。\n\nまた、最終製品における角部または稜部において面取り(R面取り)の必要なものについては、成形体の段階で、鉱物油等を高圧で噴射することにより面取りを行い、ほぼ最終製品の持つ曲面形状と同様に仕上げてから焼結工程へ進める。\n\n【0009】\n\n本発明のR-Fe-B系焼結磁石の製造方法において、R-Fe-B系焼結磁石用合金粗粉(RはYを含む希土類元素の少なくとも1種であり、Ndを含む)を酸素濃度が0.01体積%以下の窒素ガス中またはアルゴンガス中、あるいはこれらの混合ガス中で微粉砕し、微粉砕後の微粉を鉱物油、合成油、植物油あるいはこれらの混合油中に回収してスラリー状の原料とし、前記スラリー状の原料を磁界中で湿式成形して成形体とし、前記油と同じ組成の油または混合油の高圧ジェット流を成形体に噴射することにより成形体の切断もしくは面取りを行うことが好ましい。\n\nスラリーの油と切断用等の油を同じ組成とすることには次の利点がある。異なる組成の油を用いた場合、再利用するためには使用済みの油を成分毎に分離するために手間がかかる。同組成の油であれば、分離の手間がかからず再利用効率が高い。\n\n【0010】\n\n本発明のR-Fe-B系焼結磁石の製造方法において、成形体に高圧で噴射される油または混合油はオイルジェット(以後、油ジェットという場合がある)流となっており、前記オイルジェット流は進行方向に直交する断面の直径が0.05mmから3.0 mmの範囲にあり、噴射時の圧力は50 MPaから400 MPaの範囲にあり、室温での動粘度が1.1×10-5m2/s以下の非酸化性の油であることが好ましい。\n\nここで、前記断面の直径とは、ジェット流のビームをその進行方向に直交する断面でみた直径に相当する。オイルジェット流の断面の直径を0.05mmから3.0 mmという小径に絞ることができるため、成形体の加工しろを少なくすることができる。\n\n成形体を支持体の上に配置し、成形体の表面にオイルジェット流を噴射することにより切断や面取り等の加工を行う場合、支持体にはオイルジェット流を通過させるための穴や凹部を設ける。前記穴の径や凹部の幅は、オイルジェット流の直径より大きいことが望ましい。\n\n【0011】\n\n本発明において、使用する油または混合油の室温での動粘度が1.1×10-5m2/s以下で\n\nあり、分留点が400 ℃以下で、密度は1.5×103kg/m3以下であることが望ましい。ここで、動粘度の単位をストークスに変換する場合には、1.1×10-5m2/s=0.11 St=11 cStという関係を用いる。\n\n【0012】\n\n本発明では成形体を切断する際に60〜830 mm/minという切断速度を得ることができる。\n\n【0013】\n\n【0014】\n\n本発明では、寸法の大きい成形体を作製したのち、オイルジェット流で成形体を切断して、個々の磁石に対応した成形体に分割する。成形工程と焼結工程の間に加工を行わない場合に比べて、研磨や切断により除去される素材部分の体積を小さくすることができ、加工や製造コストの低減を図ることもできる。成形体は、切断に用いるオイルジェット流と同組成の油を含むが、油を含んでいない成形体についても、本発明にかかるオイルジェット流による加工方法を適用することは可能である。\n\n本発明のR-Fe-B系焼結磁石の製造方法は、成形工程と焼結工程を備え、成形工程の後にオイルジェット流で成形体を切断もしくは面取りする加工工程を有し、前記加工工程の後に焼結工程を行うものである。\n\n【0015】\n\n【発明の実施の形態】\n\n本発明では、R-T-B系(RはYを含む希土類元素の少なくとも1種であってNdを含み、TはFe、Coを含む遷移金属である)焼結磁石用合金粗粉を非酸化性雰囲気中で平均粒度1〜10μmに微粉砕し、得られた微粉を鉱物油、合成油および植物油から選択される少なくとも1種の油と脂肪酸の1価アルコールエステル、多塩基酸の1価アルコールエステル、多価アルコール脂肪酸エステルおよびそれら誘導体のうちから選択される少なくとも1種の潤滑剤とからなる非酸化性液中に回収してスラリーを作製し、次いでこのスラリーを成形することにより成形体を形成することができる。\n\n【0016】\n\n本発明では成形体の酸化を防止するために、ジェット流の媒体として高圧水を使用することはせず、高圧のかかった油を使用した。使用する油は、消防法で定めるところの第4類、第2第3石油類に属するものが好ましく、引火点が21℃以上で200 ℃未満、かつ1気圧での分留点が400 ℃以下、室温での動粘度が1.1×10-5m2/s、すなわち11 cSt以下のものが好ましい。引火点が21℃未満のものでは、安全性の維持に多大の費用と労力を要し、大量処理が必要な工業生産には適さない。また、1気圧での分留点が400 ℃を超えるもの、常温での動粘度が1.1×10-5m2/sを超えるものでは、脱油性が悪く、最終的に得られる焼結体中の残留炭素量が増加してiHcが低下するため、適切ではない。\n\n【0017】\n\nスラリーのプレスは、今回の実施実験では油圧プレスを使用した。しかし、成形時に所定の加圧を成形体に与えることができるのであれば、油圧、メカ、油圧メカ混成構造のプレス機のうちどれを選択してもかまわない。金型の形状は、最終製品の形状を単体成形で作るのか、または大きな素材を切断や研磨で作るのかにより異なる。今回の実施では成形体を切断することを考え、切断後に最終製品に近い形状となるようにするため、ブロック形状の素材用金型により製作した。\n\n【0018】\n\n(実施例)\n\nまず、質量百分率(即ち、質量%)で、Nd=27.0 %、Pr=0.5 %、Dy=1.5 %、B=1.05 %、Nb=0.35 %、Al=0.08 %、Co=2.5 %、Ga=0.09 %、Cu=0.08 %、O=0.03 %、C=0.005 %、N=0.004 %、残部Feの組成を有する、厚さが0.2〜0.5 mmの薄帯状合金をストリップキャスト法で作製した。この薄帯状の合金をArガス雰囲気中で1000 ℃で2時間加熱した。次に水素炉を使用し、この薄板状の合金を常温で水素ガス雰囲気中で水素吸蔵させ、自然崩壊させた。\n\n【0019】\n\n次いで、炉内を真空排気しつつ550 ℃まで薄板状の合金を加熱し、その温度で1時間保持して脱水素処理を行った。崩壊した合金を窒素ガス雰囲気中で機械的に破砕して、粒径32 mesh以下(#32以下)の原料粗粉とした。この原料粗粉の組成を分析したところ、Nd=27.0 %、Pr=0.5 %、Dy=1. 5 %、B=1.05 %、Nb=0.35 %、Al=0.08 %、Co=2.5 %、Ga=0.09 %、Cu=0.08 %、O=0.12 %、C=0.02 %、N=0.008 %、残部Feという分析値を得た。この原料粗粉80 kgをジェットミル内に装入した後、ジェットミル内部をN2ガスで置換し、N2ガス中の酸素濃度を実質的に0%(酸素分析計値で0.0001体積%、すなわち0.0001 vol%)とした。\n\n【0020】\n\n次いで、粉砕圧力7.0 kg/cm2、原料粗粉の供給量10 kg/hrの条件で粉砕した。微粉の平均粒度は4μmであった。ジェットミルの微粉回収口には鉱物油に潤滑剤を配合したものを満たした容器を直接設置し、N2ガス雰囲気中で微粉を直接鉱物油中へ回収した。回収後の原料は鉱物油の量を加減することで微粉の純分が80質量%の原料スラリーとした。この原料スラリーを、金型キャビティ内で12 kOeの配向磁界を印加しながら0.8 ton/cm2の成形圧で湿式成形した。配向磁界の印加方向は、成形方向と垂直である。また、金型の上パンチには鉱物油排出孔を多数設け、成形時には1 mm厚の布製のフィルタを上パンチの面にあてて使用した。\n\n【0021】\n\n成形したブロック状成形体1は成形時にスラリーからしみでてきた余剰の油をふきとった後、切断を行った。成形体1の切断時に使用した油ジェット用の油は、スラリーをプレスして成形体1を形成したときと同一の物を使用した。成形体1は、図1に示すようにXYテーブル2上に置き、その真上に固定された油ジェット流用ノズル3に対し、切断位置を自由に変更できる様に設定した。XYテーブル2上には、ノズル3から噴出した油ジェット流4がXYテーブル2上で跳ね上がらないようにするため、直径3.5 mmの穴5がもうけてあり、成形体1を通過した油ジェット流の油6はそのまま、この穴5を通過し、XYテーブル2の下部へ流れて容器7に回収されるような構造となっている。\n\n【0022】\n\n成形体切断時に、切断刃の役割をする油ジェット流は流速が大変大きいため、油ジェット流用ノズルは、ジェット流と接触する壁面の耐磨耗性を考慮して、オリフィスである入り口をダイヤモンドあるいはサファイアで製作し、他の部分をステンレス鋼で製作したものを用いた。また、高速で油の流れるノズル通路はセラミックスあるいは超硬セラミックスで製作した。油ジェット流を発生させるための高圧油の圧力は50 MPaから400 MPaの範囲内で変化させ、切断を試みた。ノズル径は0.1 mm〜0.5 mmまで種々のものを製作して試用し、成形体厚さも10mmから60 mmまで変更して切断を行ったが、すべてのノズルを用いてすべての成形体を切断することができた。ノズル径が細くなると切断された面の粗さが細かくなり、成形体の寸法精度が向上した。\n\n【0023】\n\nしかし、同じ油圧では流量が低下するため、切断速度はノズル径の太い場合に比べて低下した。表1に実施例として、油圧、ノズル径、流量を一定とした場合に、成形体切断速度が成形体の厚さによりどのように変化したか、成形体の切断時の条件の例を示す。表1の結果より、切断速度を20%ほど増加させても成形体を切断することは可能であるが、切断された破面の粗さが粗くなった。\n\n【0024】\n\n【表1】\n\n\n\n【0025】\n\n切断中に切断面が酸化されたり、また成形体表面が徐々に酸化されると、焼結後の磁石の磁気特性が低下する。そこで、成形体を、成形時に用いたものと同一の油の中に浸漬し、この状態で、油ジェットを用いて成形体切断を行った。この時成形体の上部面は油の液面から1mm〜5 mmの範囲の深さで油中に浸漬されていた。油中に浸漬された状態でも、上記表1の条件で成形体を切断することが可能であった。ただし切断速度は、成形体が油中に浸漬されていない場合に比べて、20 %〜50 %ほど深さに応じて低下した。この方法は成形体の切断速度は低下するが、切断中に成形体表面がわずかに酸化することも完全に防ぐことができる。\n\n【0026】\n\n成形体を切断するためのジェット流の中に粒径#70〜#150(即ち、粒径が70 Mesh〜150 Meshで定義されるもの)の天然砂粒子やガーネット粒子、カーボランダム粒子を体積で0.1 %〜8 %混入させて成形体を切断すると、上記の表1の切断速度よりも、20 %〜130 %大きな切断速度が得られる。しかし、ジェット流の衝撃により、切断面内にこの天然砂粒子やガーネット粒子、カーボランダム粒子が打ち込まれてしまうため、切断面の磁気特性が多少低下する。そこで、切断面を成形体の段階で、粒子を含まない油ジェット流で、再度研磨または薄く切り取るか、または切断後に成形体を焼結·熱処理した後、切断面を再度研磨する必要がある。\n\n【0027】\n\nこのようにして所定の大きさに切断された成形体は、最終的に得られる焼結体中の残留炭素量の増加をおさえるため、真空排気下で加熱温度を500 ℃以下におさえて油分の除去が行われ、次に、900℃〜1200 ℃の温度範囲で焼結が行われ、焼結体となった。次に保磁力を所定の大きさに発現させるために、400℃〜950 ℃の範囲で熱処理を行い、最終加工しろが15 %以下である磁石素材を得た。一方、成形体が切断されたときに発生した成形体端材は、機械的に押しつぶした後、再度もとのスラリーに混合することによって、再度成形体製作用のスラリーとして使用することができた。\n\n【0028】\n\n本実施例によれば、スラリーをプレスして作製した成形体を、スラリー調製時に用いたものと同一の油を用い、この油によるジェット流を用いた切断方法により、成形体の段階で、最終製品形状にできるだけ近い寸法まで切断することができた。この結果、その後につづく最終加工工程での研磨しろの体積を15 %以下におさえることができ、切断面や加工面の大きい形状をもつ磁石について、研磨や切断に基づく加工費を大幅に低減することができた。また、成形体の切断後に発生した、製品とならない成形体端材は、押しつぶして再度もとのスラリーに混合攪拌することにより、再度プレス成形体としてリサイクル使\n\n用することができ、その結果、従来の加工方法に比べて磁石材料費の大幅な低減を達成することができた。\n\n【0029】\n\n【発明の効果】\n\n以上説明したように、本発明により、成形体の酸化を防止し、且つ高速で成形体を切断することができる。また、成形体の研磨や切断により除去される素材部分の体積を小さくし、切断等により発生した成形体端材等をスラリーに混合攪拌してリサイクル使用をすることが可能であり、加工や製造コストを低減することができる。\n\n【図面の簡単な説明】\n\n【図1】  本発明にかかる成形体の加工方法を説明する概略断面図である。\n\n【符号の説明】\n\n1  ブロック状の成形体、  2  XYテーブル、\n\n3  オイルジェット流用ノズル、  4  オイルジェット流、\n\n5  穴、  6  油、  7  容器', '【0001】\n\n技术领域\n\n本发明、在喷射流动介质上使用油成型过程基于R-Fe-B的烧结磁体Tinsant方法。\n\n【0002】\n\n发明背景\n\n传统的从,水喷射技术,从喷嘴到切割和抛光工件各种媒体注射或者,通过注入超高压水或液体中的高压注水产生的空化影响利用(专利文献1或专利文献2)。也在水中作为一种使用方法,高压水的空化效果如何使用水下清洁和去毛刺用于处理它是。也在大气中作为一种使用方法,采用高压水负压,剥离涂层,底座调节,研磨等喷砂和涂层等涂药和涂层。此外,还执行仅使用高压水的剥离处理。\n\n【0003】\n\n另一方面,目前,具有磁性特性的最高ND-FE-B系统永磁体用诸如喷射磨机的破碎机碾磨以预先制造成预定组合物的熔融锭,并将其压入压力以制造成型体。在这种研磨和形成过程中,通过细磨的表面积增加的表面积细粉碎使得容易吸收氧气并且趋于氧化,因此成品模塑体被认为是相当大量的氧气。这导致磁性降低。。为了采取措施,是磁铁原料的精细碎粉是直接落入矿物油,矿物油通过混合泥浆什么的就像它一样通过模塑,模塑制品不掺入外部氧气。接下来,模塑体、真空或者,氩气或其氮气或其混合物是大气在烧结炉中烧结和400 ℃真空热处理炉,900°C加热死亡,通过调节磁体中的组织,可以产生目标矫顽力烧结磁铁材料得到。通过切割或抛光该材料,可以将其整理为所需的尺寸。永磁产品生产这个过程是拍摄的(专利文献3)。\n\n还有一种处理方法,该处理方法通过在包含具有腐蚀作用的离子的流体中分散在含有腐蚀作用的流体中并从喷嘴喷射该流体(专利文献4)来形成的高速射流。\n\n【0004】\n\n专利文献1\n\nJP-A-9-173916(第1页)\n\n专利文献2.\n\nJP 2002-224961(第3页,图1)\n\n专利文献3.\n\nJP-A-10-233306(3至4页)\n\n专利文献4.\n\n未经审查的美国专利申请公开1-228113(第2页)\n\n【0005】\n\n本发明要解决的问题\n\n但单身产品如果您生产大量生产,您将产品为每个准备专用模具时,各种各样的模具成本和工具成本在的影响由于产品的制造成本非常昂贵,市场价格竞争力减少。所以,作为一种措施,烧结和热处理的恒定形状材料提前准备,作为起点,通过切割和抛光加工通过尺寸磁铁产品我正在制作。在这种情况下,烧结后来的持久性石头材料是由于硬度高,难以使用正常切割处理,因为它很难抛光使用切割通过方法的材料我完成了目的的尺寸。\n\n【0006】\n\n使用这样的方法为了切出相同形状的材料,无论最终产品的形状和尺寸如何,切割和后抛光不成为产品的配件开始它变成了30%至60%的材料体积。尽管基于ND-Fe-B的烧结磁体具有昂贵的材料成本,但是通过抛光和切割切断的端部材料变成了粉末状磨料的混合物,因此重复使用末端。为了分离研磨,需要分离研磨剂,并且由于成本进一步额外,未使用最终材料的再利用。所以,磁铁配复合产品制造时通过抛光和切割除去的材料部分卷它会增加,材料被浪费和制造\n\n有一个问题的问题是增加。\n\n【0007】\n\n[解决问题的手段]\n\n用于制造本发明的R-Fe-B基烧结磁体的方法认为解决了上述问题是用于R-Fe-B的烧结磁体的合金粉末(R是含有A模塑的稀土元素由至少一种,包括Nd)和油(至少一种选自矿物油,合成油和植物油)组成的模塑制品,加工得到的模塑体,在制造R-Fe的方法中加工后的成型。基于基于体检测的烧结步骤的烧结磁体和在溶解之后的模制体的烧结步骤,该油防止了模制体的氧化,并且模塑体的特征在于,处理步骤包括喷射的步骤将与油的高压射流相同的油流入模塑主体,并在该过程中覆盖油料后的成型体的表面。\n\n在本发明中,射流距行进方向0.05mm至3.0mm的范围,压力在50mPa至400mPa的范围内,油的运动粘度为1.1×10-5 m2它优选为/ s或更少的非氧化油。\n\n【0008】\n\n在本发明中,上面描述了模制体浆料是油和磁粉的混合物由于通过压制制造,因此模制体覆盖有矿物油等。模压体,具有与浆料中的油相同的组件注入高压射流,如矿物油通过剪切模制方法。结果,当模制体切割时,切割后的表面总是用矿物油等。因为它被覆盖,可以防止模塑体的氧化和矿物油由于模制体的表面通过注射冷却,因此可以防止由于过热引起的自然点火和劣化。\n\n再次,在最终产品中在角落或山脊的建筑物(倒倒角)关于,在模塑机身的阶段,用高压注入矿物油等用弯曲的表面形状购买几乎最终产品和烧结的倒角进入这个过程。\n\n【0009】\n\n在本发明中R-FE-B系统制造烧结磁铁的方法在,基于R-Fe-B的烧结磁体合金粗粉(R是含有Y的稀土元素中的至少一个氮气或氩气或藻气中的氧浓度或氩气中的氧浓度为0.01体积%或更小,或在微粉后的混合气体中,细粉碎矿物油,合成油、植物油或者,将其收集在这些混合油中以获得浆料状的原料,并且浆料形原料在磁场中湿成模塑以形成模塑体,以及与相同的组成的高压射流流。混合油的油或高压射流作为油,优选通过注射切割或腔室。\n\n泥浆油和断开等等油相同的组成具有以下优点。不同的组成用油如果为每种成分分离使用的用油是耗时的耗时耗时。随着相同组成的油,采用时间和努力进行分离,重复使用效率高。\n\n【0010】\n\n在本发明中R-FE-B系统在制造烧结磁体的方法中,注入高压的油或混合油是油射流的流(下文中有时称为含油),上述油射流流动在与行进方向正交的横截面的直径中为0.05。毫米它距离3.0毫米在注射时压力50 MPA.它在400MPa的范围内,室温下的运动粘度为1.1×10-5M.2/ s.下面的非氧化油首选。\n\n这里,横截面的直径对应于与行进方向正交的横截面中的射流的直径。油射流流动横截面的直径为0.05毫米通过小直径为3.0毫米能够因此,可以减小模制体的处理。\n\n将模塑的主体放在支撑体上,并在模塑主体的表面上流动注入在诸如切割和倒角的处理的情况下,在支撑件中提供用于通过的漏斗流的孔或凹槽。期望孔的直径和凹槽的宽度大于油射流的直径。\n\n【0011】\n\n在本发明中,使用的油或混合油室温下的动态粘度1.1×10-5M.2/ s下面\n\n是的,失真点为400°C或更小,密度为1.5×103kg / m.3期望在下面。这里,1.1×10将运动粘度的单位转换为斯托克。-5M.2/s=0.11 st = 11使用CST的关系。\n\n【0012】\n\n在本发明中,在切割成型体时,可以获得60至830mm / min的切割率。\n\n【0013】\n\n【0014】\n\n在本发明中,在制造更较大的模塑制品之后,用油射流切割成型体并支撑各个磁铁做过模压体分为。与未在成形过程和烧结过程之间进行处理的情况相比,通过抛光和切割除去的材料部分可以减少体积加工和降低成本计划能够。模塑主体是用于切割和相同组成的油喷射流程包括然而,对于不含油的模塑物体,可以通过根据本发明的油射流施加处理方法。\n\n在本发明中R-FE-B系统制造烧结磁体的方法包括包括模制过程和烧结步骤的处理步骤,并且在模制过程之后,具有切割或倒倒模具的加工步骤,然后进行烧结过程处理步骤是。\n\n【0015】\n\n发明内容\n\n在本发明中,R-T-B系统(R是含有Y的稀土元素中的至少一个包括ND,T是含有Fe,Co的过渡金属)对于烧结磁铁合金粗粉在非氧化气氛中平均粒径镜头1至10μm和得到的细粉至少一种油和脂肪酸一价醇酯,多元酸酯,多元醇酯和多元醇酯和多元醇脂肪酸酯及其衍生物中的至少一种,以及选自矿物油,合成油和植物油的衍生物。用润滑剂通过回收成组成的非氧化溶液来收集浆料,然后通过模塑该浆液形成模塑。可以形成。\n\n【0016】\n\n在本发明中,作为射流的介质,以防止氧化成型体高压水未使用,高压油它被使用了。使用的油优选是属于第四类和由火桥方法设定的第二个第三石油的油,并且闪点是在21°C或更高,小于200°C,和1个气氛的远端点为400°C少于室温下的动态粘度1.1×10-5M.2/ s,即11cst或更少是优选的。闪点小于21°C,维护安全需要大量成本和努力,并且不适合需要大规模加工的工业生产。另外,一个大气压大于400℃,常温下的运动粘度为1.1×10-5M.2这是超出的渴望坏的,终于得到了它不合适,因为烧结体中的残留碳量增加,IHC降低。\n\n【0017】\n\n浆料压力机采用液压压力在该实施实验中。然而,如果在模制时可以施加预定的加压,则可以选择液压,机械和液压机械混合结构的任何压力机。模具的形状由最终产品的形状的单一模塑制成要么大物质取决于它是通过切割或抛光制作的不同的。在该实施方案中,考虑切割模制体,并且为了使最终产品靠近最终产品,它由模具制造用于块状的模具。\n\n【0018】\n\n(例子)\n\n第一的,质量百分比(即重量%),Nd = 27.0%,Pr = 0.5%,dy = 1.5%,B = 1.05%,Nb = 0.35%,Al = 0.08%,Co = 2.5%,Ga = 0.09%,Cu = 0.08%,o = 0.03%,c = 0.005%,n = 0.004%、有剩余的Fe的组成做通过条带铸造方法生产厚度为0.2至0.5mm的薄形合金。这种带状合金在Ar气体气氛中和在1000℃下加热2小时。接下来,使用氢气炉,这种薄板状合金是常温氢气气氛中的氢气储氢和自发性。\n\n【0019】\n\n然后在蒸发炉时长达550°C加热薄板状合金,在该温度下保持1小时并进行脱氢。在具有塌陷合金的氮气气氛中机械地粉碎,粒度32目或更小(#32或更小)原料粗粉。这原料粗粉分析组合物时,Nd = 27.0%,Pr = 0.5%,Dy = 1.5%,B = 1.05%,Nb = 0.35%,Al = 0.08%,Co = 2.5%,Ga = 0.09%,Cu = 0.08% ,o = 0.12%,c = 0.02%,n = 0.008%、获得剩余部分Fe的分析值。原材料在粗粉80kg装入喷射磨机后,喷射磨机的内部是2更换气体,n2气体中的氧浓度的大致0%(氧气分析仪值0.0001体积%,即0.0001体积%据说。\n\n【0020】\n\n然后,研磨压力7.0 kg / cm2那原料粗粉粉碎了10kg / hr的量。细粉平均粒径为4μm。用于喷气机微孔收集对于矿物油润滑剂混纺事物遇到的容器直接的安装了2燃气气氛中的直接细粉矿物油我恢复了。恢复后原料的通过减少矿物油的量,细粉净为80质量%这是一个原料浆料。这个原料浆料、0.8吨/厘米,同时在模腔中施加12只KOE的定向磁场2的湿成型压力。面向磁场的施加方向是、它垂直于模制方向。再次,在模具的上部冲头上矿物油排放孔提供大量的在成型时1毫米厚的织物过滤器在顶部冲头用过的。\n\n【0021】\n\n模制块模具1是在成型时从浆料中塑造剩余油后,切割。换成模塑机身时使用的油喷射器1,泥浆当通过压制形成成型体1时与使用相同的东西。模压体1如图1所示放在XY表2,它是向上固定的油喷射流量喷嘴3设定切割位置,使得切割位置可以自由改变。 XY表2从喷嘴3弹出射流流量4但XY表2.直径3.5毫米,以避免跳跃孔5关闭,模压体1的通过了油喷射流量油6的油6穿过该孔5并流到XY表2的下部就像一个结构。\n\n【0022】\n\n当模塑主体断开时,切割刀片的作用射流流量流速是很大为了,射流流量喷嘴喷射流量接触寨耐磨性考虑到孔入口到在钻石或蓝宝石中生产和其他带不锈钢的部件生产做过用过的。再次,高速油的流动的喷嘴通道是陶瓷或碳化物陶瓷生产做过。射流流量生成高压油压为50 MPa从400 MPA内变化切割我试过了。喷嘴直径是0.1mm〜各种东西可达0.5毫米生产和试验和模制体10的厚度毫米从60毫米到60毫米改变切割但那全部使用喷嘴全部可以切割成型体。喷嘴直径变薄什么时候切割表面粗糙度详细和模塑体尺寸精度有所改善。\n\n【0023】\n\n但,相同的液压压力因此,流量降低,因此切割速度是厚喷嘴直径与案例相比减少。作为表1中的一个例子,液压,喷嘴直径,恒定流速的情况下、成型速度模压式厚度改变时的条件的例子显示。从表1的结果来看,即使切削速度增加20%,也可以切割模塑体,但切割骨折表面的粗糙度粗糙化。\n\n【0024】\n\n【表格1】\n\n\n\n【0025】\n\n切割过程中切割表面氧化或氧化那还烧结后,模塑主体的表面逐渐氧化磁铁磁性所以,模压体,与模塑过程中使用的东西相同的油沉浸在这个状态,利用模压体切割。此时在上表面1至1来自油位毫米〜5毫米范围的在深度在石油中它被浸透了。即使浸入油中,表1上面在条件下切割成型体有可能。然而,将切割速率与模塑体未浸入油中的情况进行比较,20 %大约50%根据深度减少。这种方法是模塑体的切割速度是下降但是,在切割期间,模制体的表面轻微地氧化和完全预防能够。\n\n【0026】\n\n切割成型体喷射流量粒径#70到#150(即,粒度定义为70目到150目)天然沙粒,石榴石颗粒,碳烤纤维粒子0.1%至8%的污染让我使用模塑的身体切割那表1上面而不是断开率20 %〜130%大的旋转速度可以获得。但,喷射流量切割表面由于影响里面在这天然砂颗粒,石榴石颗粒,留下印象浑由于切割表面的磁性略微降低。所以,切割表面位于模塑机体的阶段,没有颗粒的油射流,再次抛光或幻灯片或者切割后烧结并加热模塑体后,切割表面再次有必要抛光。\n\n【0027】\n\n以这种方式切割到预定尺寸的模制体是终于获得了是增加烧结体中残留碳的量网真空在排气下和加热温度500°C或更少此外,进行疏水。接下来,900℃温度1200°C在范围内进行烧结并成为烧结体。接下来,为了将矫顽力表达到预定尺寸,400℃〜950°C在范围内进行热处理,最终加工为15%或更低磁铁材料我得到了它。另一方面,模压体但切割和机械压碎模制的主体端部材料后再次混合到原来的浆液作为制造成型体的浆料我能够使用它。\n\n【0028】\n\n这个例子根据浆料按压准备模压体,浆料准备与同时使用相同油,这种油使用喷射流量通过切割,在模塑体的阶段、最终尺寸尽可能接近最终产品形状断开我以前可以。因此,它将继续最终处理正在进行中抛光体积可以保持在15%以下,切割表面和加工表面抛光和切割具有大形状的磁体基于可以显着减少加工成本。此外,模制体切割后发生了,不是产品模压机身端牙齿,破碎再次通过将和搅拌混合到原始浆料中,作为压模体重回收采用\n\n为了能因此,与传统的加工方法相比实现磁体材料成本显着降低我们能够。\n\n【0029】\n\n【发明效果】\n\n如上所述,根据本发明,可以防止模制体的氧化,并且可以高速切割成型体。再次,成型通过抛光和切割除去材料部分减少可以使用通过切割等产生的模制体端材料等的再循环和搅拌到浆料中,处理和制造成本可以减少。\n\n[简要描述;简介]\n\n【图1】图3是期望一种处理本发明的模塑体的方法的示意性剖视图。\n\n[标志的说明]\n\n1个块状模塑主体,2个XY表,\n\n3射流流量喷嘴,4个射流流动,\n\n5个孔,6个油,7个容器');
INSERT INTO `os_patent_instruction_text` VALUES (12977, 22806, '【0001】\n\n【発明の属する技術分野】\n\n本発明は、耐酸化性に優れるとともに高い磁気特性を示す希土類系ボンド磁石を製造するために有用な、耐酸化性希土類系磁石粉末の製造方法に関する。\n\n【0002】\n\n【従来の技術】\n\nNd-Fe-B系磁石粉末に代表されるR-Fe-B系磁石粉末などの希土類系磁石粉末を、バインダとして熱可塑性樹脂や熱硬化性樹脂などを用いて所定形状に成形することで製造される希土類系ボンド磁石は、樹脂バインダを含有しているために希土類系焼結磁石に比較すれば磁気特性が低くなるものの、フェライト磁石などに比べればなお十分に高い磁気特性を有しており、また、複雑形状や薄肉形状の磁石やラジアル異方性磁石を容易に得ることができるといった希土類系焼結磁石にはない特徴を持っている。従って、希土類系ボンド磁石は、特にスピンドルモータやステッピングモータなどの小型モータに多く用いられ、近年、その需要が増加している。\n\n希土類系磁石粉末は高い磁気特性を有するが、RやFeが組成の大半を占めることから腐食や酸化を起しやすいという問題がある。そのため、希土類系ボンド磁石の製造においては、まず、希土類系磁石粉末を、溶解もしくは溶融(軟化)させた樹脂バインダと混合して磁石粉末の表面が樹脂バインダで被覆されたコンパウンドと呼ばれる粉末顆粒状原料を調製した後、このコンパウンドを射出成形や圧縮成形や押出成形し、用いる樹脂バインダが熱硬化性樹脂である場合にはさらに加熱して樹脂バインダを硬化させることで所定形状に成形して製品化される。しかしながら、このようにして製品化された希土類系ボンド磁石であっても、その表面に希土類系磁石粉末が露出していると、わずかな酸やアルカリや水分などの存在によって磁石粉末が腐食して錆が発生したり、100℃程度の大気中でも酸化が進行したりするので、例えば部品組み込み後に磁気特性の劣化やばらつきを招くことがある。また、樹脂バインダとして汎用されているエポキシ樹脂やナイロン樹脂などは水分や酸素の透過性を有する。従って、これらの樹脂を樹脂バインダに用いた希土類系ボンド磁石においては、樹脂を透過した水分や酸素で希土類系磁石粉末が腐食したり酸化したりする可能性があることを否定できない。さらに、希土類系磁石粉末が腐食や酸化を起しやすいことに鑑みれば、射出成形を行う場合には混練成形時の温度条件に配慮する必要があるし、圧縮成形を行う場合には成形後の硬化処理を不活性ガス雰囲気中で行う必要がある。\n\n【0003】\n\n以上のような問題を解消すべく、例えば、下記の特許文献1において、希土類系磁石粉末の表面に、リン酸塩の被覆処理を施し、リン酸塩被膜で表面被覆された希土類系磁石粉末を用いて所定形状に成形することによる酸化劣化を防止した希土類系ボンド磁石の製造方法が提案されている。\n\n【0004】\n\n【特許文献1】\n\n特開昭64-11304号公報\n\n【0005】\n\n【発明が解決しようとする課題】\n\n上記の特許文献1に記載された方法は、耐酸化性に優れた希土類系ボンド磁石を製造することができる方法として注目に値するものである。しかしながら、上記の特許文献1において用いられるリン酸塩被膜処理液を含め、通常、リン酸塩被膜処理液と称されるものは、第一リン酸亜鉛や第一リン酸マンガンなどのリン酸塩を主な構成成分とし、これに反応\n\n促進剤としての酸化剤などを含んでなる水溶液である。従って、リン酸塩被膜処理液に希土類系磁石粉末を浸漬すると、磁石粉末が処理液成分と反応して処理液中に磁石粉末の構成成分であるRやFeが溶出してしまうことで磁石粉末の表面付近(表面から深さ1μm程度)が変質して磁石粉末の磁気特性が劣化するという問題がある。また、表面変質を起した希土類系磁石粉末の表面にリン酸塩被膜を形成しても、このような磁石粉末を用いて所定形状に成形した希土類系ボンド磁石は、磁気特性の初期低下が大きいという問題がある。さらに、リン酸塩被膜処理液は水を主体とするので、磁石粉末の表面に形成される被膜を構成するリン酸塩は水和物の形態をとることから、このような磁石粉末を用いて所定形状に成形した希土類系ボンド磁石は、実使用環境下で被膜に含まれる水分が磁石粉末の、ひいてはボンド磁石の経時的な磁気特性の劣化を促進させてしまうという問題がある。\n\nそこで本発明は、耐酸化性に優れるとともに高い磁気特性を示す希土類系ボンド磁石を製造するために有用な、耐酸化性希土類系磁石粉末の製造方法を提供することを目的とする。\n\n【0006】\n\n【課題を解決するための手段】\n\n本発明者は、上記の点に鑑みて種々の検討を行う過程において、リン酸を有機溶剤に含有せしめてなる処理液に、希土類系磁石粉末を浸漬して混合攪拌した後、加熱乾燥することで、希土類系磁石粉末に耐酸化性を付与することができることを確認し、さらに検討を重ねた結果、リン酸を有機溶剤に含有せしめてなる処理液に微量の金属イオンを添加すると、リン酸による希土類系磁石粉末への耐酸化性の付与効果が向上することを知見した。\n\n【0007】\n\n上記の知見に基づいてなされた本発明の耐酸化性希土類系磁石粉末の製造方法は、請求項1記載の通り、0.1重量%〜5重量%のリン酸と5ppm〜350ppmのCo,Zr,Vから選ばれる少なくとも1種の金属イオンを有機溶剤に含有せしめてなる処理液に、希土類系磁石粉末を浸漬して混合攪拌した後、加熱乾燥することを特徴とする。\n\nまた、請求項2記載の製造方法は、請求項1記載の製造方法において、加熱乾燥を真空中または不活性ガス雰囲気中50℃〜120℃にて行うことを特徴とする。\n\nまた、請求項3記載の製造方法は、請求項1または2記載の製造方法において、希土類系磁石粉末の平均粒径(長径)が200μm以下であることを特徴とする。\n\nまた、請求項4記載の製造方法は、請求項3記載の製造方法において、希土類系磁石粉末がHDDR磁石粉末であることを特徴とする。\n\nまた、本発明の耐酸化性希土類系磁石粉末は、請求項5記載の通り、請求項1記載の製造方法により製造されてなることを特徴とする。\n\nまた、本発明の希土類系ボンド磁石用コンパウンドは、請求項6記載の通り、請求項5記載の耐酸化性希土類系磁石粉末と樹脂バインダとからなることを特徴とする。\n\nまた、本発明の希土類系ボンド磁石は、請求項7記載の通り、請求項6記載の希土類系ボンド磁石用コンパウンドを用いて所定形状に成形されてなることを特徴とする。\n\n【0008】\n\n【発明の実施の形態】\n\n本発明の耐酸化性希土類系磁石粉末の製造方法は、請求項1記載の通り、0.1重量%〜5重量%のリン酸と5ppm〜1000ppmの金属イオンを有機溶剤に含有せしめてなる処理液に、希土類系磁石粉末を浸漬して混合攪拌した後、加熱乾燥することを特徴とするものである。本発明によれば、希土類系磁石粉末に優れた耐酸化性を付与することができる。また、本発明において用いられる処理液は有機溶剤を主体とするので、上記の特許文献1に記載されている水を主体とするリン酸塩被膜処理液を用いた場合とは異なり、希土類系磁石粉末の表面付近が変質するといった問題などを極力回避することができるので、磁石粉末の磁気特性の劣化を防止することができる。従って、本発明の製造方法により製造される耐酸化性希土類系磁石粉末を用いれば、耐酸化性に優れるとともに高い磁気特性を示す希土類系ボンド磁石を製造することができる。\n\n【0009】\n\n本発明において用いられる0.1重量%〜5重量%のリン酸と5ppm〜1000ppmの金属イオンを有機溶剤に含有せしめてなる処理液は、例えば、有機溶剤に、リン酸と、所望する金属イオンを処理液中に含有せしめることができる金属塩や金属塩化物などを、処理液中におけるリン酸と金属イオンの含有量がそれぞれ所定量となるように、溶解させたり分散させたりすることによって調製することができる。\n\n【0010】\n\nここで、有機溶剤としては、メチルアルコールやエチルアルコールやイソプロピルアルコールなどの低級アルコール、アセトニトリル、メチルエチルケトンなどの極性有機溶剤が好適である。\n\n【0011】\n\nまた、リン酸としては、例えば、85%濃度のリン酸水溶液を用いることができる。処理液中におけるリン酸の含有量を0.1重量%〜5重量%と規定するのは、0.1重量%を下回ると、リン酸による希土類系磁石粉末への耐酸化性の付与効果が十分に発揮されないおそれがある一方、5重量%を上回ると、希土類系磁石粉末との反応が促進され、磁石粉末の磁気特性が劣化するおそれがあるからである。なお、処理液中におけるリン酸の含有量は、望ましくは0.3重量%〜3重量%である。\n\n【0012】\n\nまた、金属イオンとしては、Cu,Co,Ni,Zr,V,Moなどが好適である。これらの金属イオンは、リン酸による希土類系磁石粉末への耐酸化性の付与効果を向上させることができる。金属イオンは、有機溶剤に、所望する金属イオンを生成する金属塩(金属の硫酸塩や金属酸のナトリウム塩など)や金属塩化物などを、処理液中における金属イオンの含有量が所定量となるように、溶解させたり分散させたりすることで含有せしめればよい。また、金属イオンは、処理液に、単独で含有せしめられてもよいし2種以上を混合して含有せしめられてもよい。処理液中における金属イオンの含有量を5ppm〜1000ppmと規定するのは、5ppmを下回ると、処理液中に金属イオンを含有せしめる効果が十分に発揮されないおそれがある一方、1000ppmを上回ると、処理液中への磁石粉末の構成成分であるRやFeの溶出量が増加して沈殿物を生成し、処理液の安定性に悪影響を与えるおそれがあるからである。なお、処理液中における金属イオンの含有量は、望ましくは20ppm〜500ppmであり、より望ましくは30ppm〜300ppmである。\n\n【0013】\n\n耐酸化性希土類系磁石粉末は、以上のようにして調製された処理液に、希土類系磁石粉末を浸漬して混合攪拌した後、加熱乾燥することにより製造される。\n\nより具体的には、十分量の処理液に、希土類系磁石粉末を浸漬して混合攪拌した後、磁石粉末を濾取してからこれを加熱乾燥する。処理液に希土類系磁石粉末を浸漬して混合攪拌する時間は、希土類系磁石粉末量などにも依存するが、概ね1分〜20分である。希土類系磁石粉末の磁気特性の劣化を招くことなく磁石粉末に耐酸化性を付与するためには、加熱乾燥は、真空中または不活性ガス(窒素ガスやアルゴンガスなど)雰囲気中50℃〜120℃にて行うことが望ましい。加熱乾燥の時間は、希土類系磁石粉末量などにも依存するが、概ね1分〜1時間である。このようにして製造された耐酸化性希土類系磁石粉末は、磁石粉末が、膜厚が0.1μm以下のリン酸と金属を構成成分とする被膜により表面被覆されていると考えられ、さらなる検証が必要ではあるが、この被膜は、磁石粉末に由来する鉄とリン酸から生成するリン酸鉄中に微量の金属が固溶している形態で構成されていると推察される。\n\n【0014】\n\n上記の特許文献1に記載されているリン酸塩被膜処理液を用いた場合に起る、希土類系磁石粉末の表面付近が変質するといった現象は、とりわけ、平均粒径(長径)が小さい(例えば200μm以下)磁石粉末に対して磁気特性の劣化を顕著に引き起すことになる。しかしながら、本発明によれば、平均粒径(長径)が小さい希土類系磁石粉末、例えば、平均粒径が80μm〜100μm程度の、希土類系磁石合金を水素中で加熱して水素を吸蔵\n\nさせた後、脱水素処理し、次いで冷却することによって得られる磁気的異方性のHDDR(Hydrogenation-Disproportionation-Desorption-Recombination)磁石粉末(特公平6-82575号公報参照)などに対しても、磁気特性の劣化を引き起すことなく優れた耐酸化性を付与することができるので、この点において本発明の耐酸化性希土類系磁石粉末の製造方法は利用価値が高い。\n\n【0015】\n\n【実施例】\n\n以下、本発明を実施例によってさらに詳細に説明するが、本発明はこれに限定して解釈されるものではない。\n\n【0016】\n\n実施例A:耐酸化性HDDR磁石粉末の製造その1とその特性\n\n高周波溶解によって組成:Nd12.8原子%,Dy1.0原子%,B6.3原子%,Co14.8原子%,Ga0.5原子%,Zr0.09原子%,残部Feの鋳隗を作製し、アルゴンガス雰囲気中で1100℃×24時間焼鈍したものを酸素濃度0.5%以下のアルゴンガス雰囲気中で粉砕して平均粒径100μmの粗粉砕粉としてからこれを0.15MPaの水素ガス加圧雰囲気中で870℃×3時間の水素化熱処理を行い、その後、減圧(1kPa)アルゴンガス流気中で850℃×1時間の脱水素処理を行ってから冷却して製造したHDDR磁石粉末(平均結晶粒径0.4μm)を用いて以下の実験を行った。\n\n【0017】\n\n実験1:\n\nリン酸を0.5重量%含有せしめてなるエチルアルコールに硫酸コバルトをCoイオンが70ppmとなるように添加して処理液1を調製した。\n\n300ccの処理液1にHDDR磁石粉末100gを5分間浸漬して混合攪拌した後、処理済磁石粉末を濾取し、余分な処理液を除去してからこれを真空中(【0018】\n\n実験2:\n\nリン酸を0.5重量%含有せしめてなるエチルアルコールを用いて実験1と同様にして表面処理を行ったHDDR磁石粉末(比較サンプル磁石粉末)を得、これに対し、実験1と同様の加熱試験を行い、試験前に対する試験後における酸化による重量増加率を測定した。結果を表1に示す。\n\n【0019】\n\n実験3:\n\n何らの表面処理も行っていないHDDR磁石粉末(対照サンプル磁石粉末)に対し、実験1と同様の加熱試験を行い、試験前に対する試験後における酸化による重量増加率を測定した。結果を表1に示す。\n\n【0020】\n\n【表1】\n\n\n\n【0021】\n\n表1から明らかなように、比較サンプル磁石粉末は、対照サンプル磁石粉末よりも酸化による重量増加率が遥かに少なかったが、サンプル磁石粉末1は、比較サンプル磁石粉末よりも酸化による重量増加率がさらに少なく、サンプル磁石粉末1は耐酸化性に優れることがわかった。\n\n【0022】\n\n実施例B:耐酸化性HDDR磁石粉末の製造その2とその特性および耐酸化性HDDR磁石粉末を用いたボンド磁石の製造とその特性\n\n高周波溶解によって組成:Nd12.8原子%,B6.3原子%,Co14.8原子%,Ga0.5原子%,Zr0.09原子%,残部Feの鋳隗を作製し、アルゴンガス雰囲気中で1100℃×24時間焼鈍したものを酸素濃度0.5%以下のアルゴンガス雰囲気中で粉砕して平均粒径100μmの粗粉砕粉としてからこれを0.15MPaの水素ガス加圧雰囲気中で870℃×3時間の水素化熱処理を行い、その後、減圧(1kPa)アルゴンガス流気中で850℃×1時間の脱水素処理を行ってから冷却して製造したHDDR磁石粉末(平均結晶粒径0.4μm)を用いて以下の実験を行った。\n\n【0023】\n\n実験1:\n\n実施例Aにおける処理液1を用いて実施例Aにおける実験1と同様にして表面処理を行ったHDDR磁石粉末を得た。また、エポキシ樹脂とフェノール系硬化剤を重量比率で100:3の割合でメチルエチルケトンに溶解して樹脂液を調製した。表面処理を行ったHDDR磁石粉末と樹脂液を、表面処理を行ったHDDR磁石粉末と樹脂液の合計重量に対する樹脂液の重量の比率が3.5%となるように均一混合した後、メチルエチルケトンを常温で蒸発させて粉末顆粒状の希土類系ボンド磁石用コンパウンドを得た。得られた希土類系ボンド磁石用コンパウンドを、960kA/mの磁場中において、加圧力588MPaで圧縮成形し、得られた成形体を150℃のアルゴンガス雰囲気中で1時間加熱してエポキシ樹脂を硬化させて、寸法が縦12.0mm×横7.6mm×高さ7.5mmで密度が5.9g/cm3のボンド磁石を製造した。こうして製造されたボンド磁石(サンプル磁石1)に対し、大気中150℃で100時間加熱する加熱試験を行い、試験前に対する試験後における酸化による重量増加率を測定した。また、サンプル磁石1に対して着磁を行った後、大気中100℃で100時間加熱する加熱試験と大気中150℃で100時間加熱する加熱試験を行い、それぞれの加熱試験について、試験前に対する試験後における磁束劣化率(不可逆減磁率)を測定した。さらに、大気中150℃で100時間加熱する加熱試験を行ったサンプル磁石1については再着磁を行い、加熱試験前に対する再着磁後における磁束劣化率(永久減磁率)を測定した。これらの結果を表2に示す。\n\n【0024】\n\n実験2:\n\nリン酸を0.5重量%含有せしめてなるエチルアルコールにジルコン酸ナトリウムをZrイオンが200ppmとなるように添加するとともにバナジン酸ナトリウムをVイオンが\n\n150ppmとなるように添加して調製した処理液2を用いて実験1と同様にして表面処理を行ったHDDR磁石粉末を得、さらにボンド磁石を製造した。こうして製造されたボンド磁石(サンプル磁石2)に対し、実験1と同様の各種試験を行った。結果を表2に示す。\n\n【0025】\n\n実験3:\n\nリン酸を0.5重量%含有せしめてなるエチルアルコールを用いて実験1と同様にして表面処理を行ったHDDR磁石粉末を得、さらにボンド磁石を製造した。こうして製造されたボンド磁石(比較サンプル磁石)に対し、実験1と同様の各種試験を行った。結果を表2に示す。\n\n【0026】\n\n実験4:\n\n何らの表面処理も行っていないHDDR磁石粉末を用いて実験1と同様にしてボンド磁石を製造した。こうして製造されたボンド磁石(対照サンプル磁石)に対し、実験1と同様の各種試験を行った。結果を表2に示す。\n\n【0027】\n\n【表2】\n\n\n\n【0028】\n\n表2から明らかなように、比較サンプル磁石は、対照サンプル磁石よりも酸化による重量増加率も磁束劣化率も少なかったが、サンプル磁石1とサンプル磁石2は、比較サンプル磁石よりも酸化による重量増加率も磁束劣化率もさらに少なかった。サンプル磁石1とサンプル磁石2がこのような優れた特性を示すのは、優れた耐酸化性が付与されたHDDR磁石粉末を用いて所定形状に成形されていることに基づくものであるとともに、所定形状に成形する際の圧縮成形時や成形後においても、磁石粉末の表面損傷が抑制されていることで酸化が効果的に阻止されていることに基づくものである。\n\n【0029】\n\n【発明の効果】\n\n本発明によれば、耐酸化性に優れるとともに高い磁気特性を示す希土類系ボンド磁石を製造するために有用な、耐酸化性希土類系磁石粉末の製造方法が提供される。', '【0001】\n\n技术领域\n\n本发明涉及一种制备耐氧化稀土基磁粉末的方法,其可用于制备稀土基粘结磁体,其表现出高磁性和抗氧化性。\n\n【0002】\n\n发明背景\n\n通过使用热塑性树脂或热固性树脂作为粘合剂,通过形成预定形状来制造稀土基磁体粉末,例如由ND-Fe-B基磁体粉末表示的R-Fe-B基磁体粉末。由于由于树脂粘合剂,稀土基粘结磁体包含在稀土基烧结磁体中,因此磁特性降低,但与铁氧体磁体相比,磁性特性仍然足够高。此外,它还具有特征不具有稀土基烧结磁体,其可以容易地获得复杂的形状或薄壁磁铁或薄壁磁铁或径向各向异性磁体。因此,稀土基粘结磁铁通常用于诸如主轴电机或步进电机的小型电机中,并且近年来其需求正在增加。\n\n虽然稀有的地球磁体粉末具有高磁性,但存在腐蚀和氧化趋于发生的问题,因为R和Fe占据了大多数组合物。因此,在稀土基粘结磁体的制造中,首先,将磁体粉末的表面与通过溶解或熔化(软化)获得的树脂粘合剂混合,以及称为涂有树脂粘合剂的化合物的粉末颗粒形状在制备原料后,该化合物是注塑成型,压缩成型,挤出成型,并且当树脂粘合剂是热固性树脂时进一步加热使用的树脂粘合剂,通过固化树脂粘合剂来形成树脂粘合剂以形成a通过固化树脂粘合剂来预定的形状。它是制造的。然而,即使是以这种方式制造的稀土基粘结磁体,如果稀土基磁体粉末暴露在表面上,磁体粉末由于存在轻微的酸,碱或水分而导致的磁体粉末呈现。甚至在约100℃的气氛中发生生锈或氧化进展,例如,它可能导致部分掺入后导致磁性的劣化和变化。另外,环氧树脂和尼龙树脂广泛使用的树脂粘合剂具有水和氧的渗透性。因此,在使用这些树脂的稀土基粘结磁体中,不能拒绝透水水和氧气可以腐蚀或氧化稀土基磁体粉末。此外,鉴于稀土基磁体粉末考虑到腐蚀和氧化,当进行注塑时,需要考虑捏合成型时的温度条件,并且当进行压缩成型时,在模塑固化过程之后,需要在惰性气体气氛中进行。\n\n【0003】\n\n为了消除上述问题,例如,在以下专利文献1中,稀土基磁体粉末的表面涂覆有磷酸盐,并且表面涂覆有磷酸涂层的稀土基磁体粉末是a已经提出了制造稀土基粘结磁体的方法,其防止通过模制成预定形状的氧化劣化。\n\n【0004】\n\n专利文献1\n\nJP-A-64-11304\n\n【0005】\n\n本发明要解决的问题\n\n上述专利文献1中描述的方法是吸引注意力作为能够制造优异的抗氧化性的稀土基粘合磁体的方法。然而,通常称为磷酸涂层处理溶液,包括专利文献1中使用的磷酸盐涂层处理液,是磷酸盐,例如伯磷酸盐或伯磷酸母磷酸盐,例如伯磷酸盐。主要成分使用,和\n\n它是含有氧化剂等作为启动子的水溶液。因此,当稀土基磁粉浸入磷酸涂层处理溶液中时,磁体粉末与处理液组分反应,通过r和fe洗脱来洗脱处理液中的磁粉。存在问题磁体粉末的磁性降低,磁体粉末的磁性降低,磁体粉末的磁性在表面表面的表面附近劣化(到表面深约1μm)。另外,即使在引起表面劣化的稀土基磁粉的表面上形成磷酸盐涂层,在初始减少的情况下,使用这种磁铁粉末的预定形状成型的稀土基粘结磁铁磁特性。有一个问题。此外,由于主要使用磷酸涂层处理液,因此构成形成在磁体粉末表面上的膜的磷酸盐采用水合物的形式,因此使用这种磁体粉末是以预定形状形成的稀土基粘结磁体。在实现的环境中涂层中所含的水分促进磁粉的磁性磁性的磁性的劣化,从而促进粘合磁体的磁性的劣化。\n\n因此,本发明的目的是提供一种制造抗氧化稀土基磁体粉末的方法,可用于制造稀土基粘结磁体,其表现出高磁性和抗氧化性。\n\n【0006】\n\n[解决问题的手段]\n\n在考虑到上述点的各种研究的过程中,将稀土基磁粉浸渍并混合并在混合并搅拌后在含有磷酸作为有机溶剂的过程溶液中搅拌。另外,如确认稀土基磁体粉末可以赋予赋予稀土基磁体粉末,并且由于进一步检查的结果,将痕量的金属离子加入到有机溶剂中的处理溶液中,并且它是磷酸发现通过改进的氧化抗性对稀土基磁粉的影响。\n\n【0007】\n\n2.如权利要求1所述的本发明的氧化耐氧化稀土基磁体粉末的制备方法如权利要求1所述的如下所述,如权利要求1所述的0.1重量%至5重量%磷酸和5ppm350 ppm.的co,zr,v将稀土基磁体粉末浸渍并混合并在混合并搅拌后在处理液中搅拌,其选自选自有机溶剂的有机溶剂。\n\n2.根据权利要求2所述的制造方法的特征在于,在根据权利要求1所述的制造方法中,在惰性气体气氛中真空或在50℃至120℃下进行热干燥。\n\n4.根据权利要求3所述的制造方法的特征在于,在根据权利要求1或2的制造方法中,稀土基磁粉的平均粒径(主直径)为200μm或更小。\n\n5.根据权利要求4所述的制造方法的特征在于,在根据权利要求3所述的制造方法中,所述稀土基磁粉是HDDR磁体粉末。\n\n本发明的氧化耐氧化稀土磁体粉末的特征在于本发明的560方面,其通过根据权利要求1的制造方法制造。\n\n此外,根据本发明的稀土基粘结磁体的化合物的特征在于本发明的第六方面,以及根据权利要求5的氧化耐氧化稀土基磁粉和树脂粘合剂。\n\n此外,本发明的稀土基粘结磁体的特征在于,使用根据权利要求6的稀土基粘合磁体的化合物形成预定的形状。\n\n【0008】\n\n发明内容\n\n2.如权利要求1所述的制备本发明的耐氧化稀土磁体粉末的方法,如权利要求1所述的0.1重量%至5重量%的磷酸和5ppm至1000ppm金属离子中所述含有有机溶剂。将稀土基磁体粉末浸渍并混合并搅拌,然后加热至干。根据本发明,可以赋予稀土基磁性粉末优异的氧化性能。此外,由于本发明中使用的加工液主要由有机溶剂组成,因此与主要在上述专利文献1中主要描述的磷酸涂层处理液体的情况不同,因此由于问题等的稀土基磁体可以尽可能地避免粉末附近劣化,可以防止磁体粉末的磁性的劣化。因此,通过使用本发明的制造方法制造的氧化耐稀土基磁体粉末,可以制造稀土基粘合磁体,其表现出高磁性和抗氧化性。\n\n【0009】\n\n包含0.1%至5重量%的磷酸和5ppm至100ppm至1000ppm金属离子的处理溶液,例如用磷酸和所需金属离子处理,例如通过溶解或分散含量来制备可以含有在液体中的金属盐,金属氯化物等,以及处理液中的磷酸和金属离子的含量。\n\n【0010】\n\n这里,作为有机溶剂,优选极性有机溶剂,例如低级醇,例如甲醇,乙醇或异丙醇,乙腈和甲基乙基酮。\n\n【0011】\n\n另外,作为磷酸,例如,可以使用浓度为85%的磷酸的水溶液。当磷酸的含量在处理液中定义为0.1重量%至5重量%时,抗氧化性对稀土基磁体粉末通过磷酸的作用没有充分表现出来。虽然存在风险,促进了与稀土基磁体粉末的反应,磁体粉末的磁特性可能降低。处理液中磷酸的含量理想地是0.3%至3重量%。\n\n【0012】\n\n此外,Cu,Co,Ni,Zr,V,Mo等适合作为金属离子。这些金属离子可以通过磷酸改善稀土基磁体粉末的抗氧化性效应。金属离子是金属盐(如金属硫酸盐和金属酸的钠盐和金属酸的金属酸),金属氯化物和金属氯化物,金属离子,以及处理液中的金属离子,它可以通过溶解或分散来含有。而且,金属离子可以单独或两种以上组合中包含在处理液中。当处理溶液中金属离子的含量定义为5ppm至1000ppm时,如果它低于5ppm,则在处理液中可能无法充分显示含有金属离子的效果,而治疗超过1000ppm。这是因为增加了R和Fe的溶解量,即磁体粉末到液体的组分,增加以产生沉淀物,并且处理液体的稳定性可能受到不利影响。处理液中金属离子的含量理想地是20ppm至500ppm,更优选为30ppm至300ppm。\n\n【0013】\n\n通过将稀土基磁粉浸入并通过混合和搅拌搅拌并搅拌并搅拌并加热至干,产生抗氧化耐稀土基磁粉末。\n\n更具体地,稀土基磁体粉末浸入足够量的处理溶液中并混合并搅拌,然后通过过滤收集磁体粉末,然后加热至干。将稀土基磁体粉末浸入加工溶液和混合和搅拌中的时间取决于稀土基磁粉等的量,但约为1分钟至20分钟。为了赋予磁体粉末的抗氧化性而不导致稀土基磁体粉末的磁性损坏,在真空或惰性气体(例如氮气和氩气)中的热干燥是50℃至120℃期望在℃下进行加热和干燥时间还取决于稀土基磁体粉末等的量,但约为1至1小时。以这种方式制造的氧化耐稀土基础磁体粉末被认为是表面涂覆的,该涂层具有0.1μm或更小的膜厚的薄膜,并且具有作为组分的组分的薄膜,但虽然进一步验证需要该涂层,推测痕量的金属在由磁粉末衍生的铁和磷酸产生的磷酸盐中固体溶解。\n\n【0014】\n\n特别地,在专利文献1中描述的磷酸盐涂层处理溶液中使用的稀土基磁体粉末的表面附近的现象特别小,平均粒径(主要直径)小(例如,200μm或更小)磁性粉末的劣化显着对磁体粉末显着。然而,根据本发明,例如,具有小平均粒径(主轴)的稀土基磁体粉末,例如,用稀土基磁铁合金加热稀土基磁铁合金。平均粒径为80μm至100μm,吸收氢气。\n\n在脱氢处理然后冷却后,磁各向异性HDDR(氢化 - 歧化 - 脱落重组)磁粉(参见日本公布No.6-82575)等,因为可以赋予优异的抗氧化性而不会导致磁性劣化,制备本发明的氧化耐稀土基磁体粉末的方法的价值较高。\n\n【0015】\n\n【例子】\n\n在下文中,将通过实施例更详细地描述本发明,但是本发明不旨在解释。\n\n【0016】\n\n实施例A:耐氧化HDDR磁粉部分1及其性能\n\n通过高频溶解组成:Nd12.8原子%,DY1.0原子%,B6.3原子%,CO 14.8原子%,Ga 0.5原子%,Zr 0.09原子%,残留Fe的剩余物,氢气压力气体0.15MPa为0.15MPa,从0.15MPa氢气压力气氛为0.15MPa,因为碎粉末,平均粒径为100μm,并在氩气气氛中在1100℃的退火24小时内粉碎于氩气气氛中。HDDR磁铁粉末(平均晶粒尺寸)在870℃下进行氢化热处理3小时后,通过在850℃下在真空(1kPa)氩气流中进行脱氢处理1小时进行。以下实验使用0.4μm进行)。\n\n【0017】\n\n实验1:\n\n通过向含有0.5重量%的磷酸的乙醇加入乙醇来制备处理液1。\n\n浸入100g HDDR磁体粉末5分钟并混合5分钟后,通过过滤收集处理的磁粉,除去额外的加工溶液,然后在70°处真空(【0018】\n\n实验2:\n\n以与含有0.5%重量的磷酸的乙醇相同的实验1,以与实验1相同的方式获得HDDR磁粉(对比样品磁体粉末),以及与实验1中相同的加热试验是重量增加通过氧化在测试测试后进行测量。结果如表1所示。\n\n【0019】\n\n实验3:\n\n相对于没有任何表面处理的HDDR磁粉(对照样品磁体粉末)对类似于实验1的加热试验,测量了测试后由于氧化而导致的重量增益。结果如表1所示。\n\n【0020】\n\n【表格1】\n\n\n\n【0021】\n\n从表1中明显看出,对比较样品磁体粉末由于氧化而大于对照样品磁体粉末的重量增加得多,但样品磁粉末1通过氧化具有比比较的样品磁体粉末的重量增加。此外,它被发现样品磁体粉末1具有优异的抗氧化性。\n\n【0022】\n\n实施例B:耐氧化HDDR磁粉部2的生产及其性能和抗抗抗HDDR磁粉制造及其粘合磁体的特性\n\n通过高频溶解组成:Nd12.8原子%,B6.3原子%,CO14.8原子%,Ga 0.5原子%,Zr 0.09原子%,残留的Fe浇注,1100粒氩气气氛中的退火退火用退火的退火在氩气气氛中粉碎,氧浓度为0.5%或更小的平均粒径为100μm。这是870°C×3小时,氢气压力气氛为0.15 MPA。进行氢化热处理,然后在真空(1kPa)氩气流中在850℃下在850℃下进行脱氢处理后使用HDDR磁体粉末(平均晶粒尺寸0.4μm)。以下实验进行了。\n\n【0023】\n\n实验1:\n\n以与实施例A中的处理液1相同的实验1中的HDDR磁体粉末以与实验1相同的方式获得。另外,以100:3以重量比以100:3的速率溶解环氧树脂和酚类固化剂以制备树脂液体。在进行HDDR磁粉和进行表面处理的树脂液体之后,树脂液体对树脂液体的总重量和树脂液体的总重量均匀混合,使其为3.5%,和甲基乙基酮在常温下。得到蒸发,得到粉末状稀土基键磁体化合物。得到的稀土基粘结磁体化合物在960kA / m的磁场下压缩模塑,并将所得模制体在150℃下在氩气气氛中加热1小时以固化环氧树脂。尺寸垂直12.0mm×6.6 mm宽×7.5 mm,密度为5.9 g / cm3粘结磁铁制造。在大气中在大气中在150℃下在大气中加热加热试验,在测试之前通过氧​​化测量重量增加速率。另外,在相对于样品磁体1的磁化之后,在大气中在100℃下在大气中在大气中加热在100℃下加热100小时,在150℃下进行热量测试100小时,每个测试的每个加热试验是测量测试后的磁通量劣化速率(不可逆的香味)。此外,在大气中进行在150℃下进行加热试验的样品磁体1在大气中进行100小时,并测量在相对于加热试验相对于加热试验后的磁通量劣化速率(永久性退磁速率)。这些结果如表2所示。\n\n【0024】\n\n实验2:\n\n将锆酸钠加入到含0.5重量%磷酸的乙醇中,使得Zr离子加入200ppm和v离子的钒酸盐中\n\n使用制备为150ppm的加工液2,以与实验1相同的方式获得对表面处理的HDDR磁体粉末,进一步制造粘合磁体。在以这种方式制造的粘合磁体(样品磁体2)上执行类似于实验1的各种测试。结果显示在表2中。\n\n【0025】\n\n实验3:\n\n使用含有0.5重量%磷酸的乙醇的实验1在实验1中以与实验1相同的方式获得HDDR磁体粉末,并进一步制造粘合磁体。在以这种方式制造的键合磁体(比较样品磁体)上进行类似于实验1的各种测试。结果显示在表2中。\n\n【0026】\n\n实验4:\n\n使用具有没有任何表面处理的HDDR磁粉,以与实验1相同的方式生产粘合磁体。在以这种方式制造的粘合磁体(对照样品磁体)上执行类似于实验1的各种测试。结果显示在表2中。\n\n【0027】\n\n[表2]\n\n\n\n【0028】\n\n从表2中明显,比较样品磁体通过氧化也具有比对照样品磁体的少量重量,但样品磁体1和样品磁体2通过氧化增加而不是比较的样品磁铁。速度也较少或更少的磁通量降解速率。样品磁体1和样品磁体2示出了这种优异的特性,并且基于使用HDDR磁粉模塑成预定形状,即使在模塑时压缩成型后也能够预定施加优异的抗氧化性。成型和成型后,抑制磁体粉末的表面损伤,这是基于有效封闭的氧化。\n\n【0029】\n\n【发明效果】\n\n根据本发明,提供了一种制造抗氧化稀土基磁体粉末的方法,其可用于制备稀土基粘合磁体,其具有具有高磁性的磁性,以及抗氧化性。');
INSERT INTO `os_patent_instruction_text` VALUES (12978, 22807, '【0001】\n\n【発明の属する技術分野】\n\n本発明は、苛酷環境下においても高耐食性を発揮する希土類系永久磁石およびその製造方法に関する。\n\n【0002】\n\n【従来の技術】\n\nNd-Fe-B系永久磁石に代表されるR-Fe-B系永久磁石やSm-Fe-N系永久磁石に代表されるR-Fe-N系永久磁石などの希土類系永久磁石は、資源的に豊富で安価な材料が用いられ、かつ、高い磁気特性を有していることから、特にR-Fe-B系永久磁石は、今日様々な分野で使用されている。\n\nしかしながら、希土類系永久磁石は、反応性の高い希土類金属:Rを含むため、大気中で酸化腐食されやすく、何の表面処理をも行わずに使用した場合には、わずかな酸やアルカリや水分などの存在によって表面から腐食が進行して錆が発生し、それに伴って、磁石特性の劣化やばらつきを招く。さらに、錆が発生した磁石を磁気回路などの装置に組み込んだ場合、錆が飛散して周辺部品を汚染する恐れがある。\n\n従って、希土類系永久磁石の表面に耐食性被膜としてアルミニウムや亜鉛を構成成分とする被膜を形成する方法が古くから知られている。\n\n【0003】\n\nアルミニウムや亜鉛は、希土類系永久磁石に対して犠牲防食作用を有するのでこれらの金属を構成成分とする被膜は耐食性被膜として価値がある。しかしながら、例えば、アルミニウム被膜や亜鉛被膜を気相めっき法によって希土類系永久磁石の表面に形成した場合、わずかではあるがピンホールが被膜中に生成することがあるので、ピンホールを通して酸やアルカリや水分などの腐食成分が磁石の表面に到達し、磁石が腐食するといった現象が起こる。また、これらの金属がその犠牲防食作用を発揮することで溶出したり白錆を発生\n\nしたりした場合、溶出成分や白錆成分が希土類系永久磁石の使用環境によっては汚染物質になるといった問題がある。\n\nそこで、アルミニウム被膜や亜鉛被膜が有する以上のような問題を解消する方法として、例えば、下記の特許文献1や特許文献2において、アルミニウム被膜の表面に化成処理被膜を形成する方法や、アルミニウム被膜や亜鉛被膜の表面に金属酸化物被膜を形成する方法が提案されている。\n\n【0004】\n\n【特許文献1】\n\n特開2000-150216号公報\n\n【特許文献2】\n\n特開2000-232011号公報\n\n【0005】\n\n【発明が解決しようとする課題】\n\n上記の特許文献1や特許文献2において提案された方法は、アルミニウム被膜や亜鉛被膜が有する以上のような問題を解消する方法として評価することができるものである。しかしながら、昨今において要求される、希土類系永久磁石への過酷環境下における高耐食性付与の観点からはより優れた方法が待ち望まれている。\n\nそこで本発明は、苛酷環境下においても高耐食性を発揮する希土類系永久磁石およびその製造方法を提供することを目的とする。\n\n【0006】\n\n【課題を解決するための手段】\n\n本発明者らは上記の点に鑑みて種々の検討を行った結果、希土類系永久磁石の表面にアルミニウム被膜を介して形成した化成処理被膜の表面に、さらに、珪酸リチウムを構成成分とする被膜中に所定量の樹脂が均一分散した被膜を形成することで、磁石の耐食性を大幅に向上することができることを知見した。また、希土類系永久磁石の表面に形成したアルミニウム被膜の表面にこのような被膜を直接形成した場合でも、磁石の耐食性を大幅に向上することができることを知見した。\n\n【0007】\n\n本発明は上記の知見に基づいてなされたものであり、本発明の高耐食性永久磁石は、請求項1記載の通り、珪酸リチウムと、ソープフリー水溶性エマルジョン樹脂として処理液に分散された樹脂を構成成分とし、樹脂が0.1重量%〜50重量%の含量で均一分散した樹脂分散被膜を、希土類系永久磁石の表面に形成した金属を構成成分とする被膜を介して、または、さらにその表面に積層形成した化成処理被膜を介して、有することを特徴とする。\n\nまた、請求項2記載の高耐食性永久磁石は、請求項1記載の高耐食性永久磁石において、樹脂が熱可塑性樹脂であることを特徴とする。\n\n  また、請求項3記載の高耐食性永久磁石は、請求項2記載の高耐食性永久磁石において、熱可塑性樹脂がアクリルスチレン樹脂であることを特徴とする。\n\nまた、請求項4記載の高耐食性永久磁石は、請求項1乃至3のいずれかに記載の高耐食性永久磁石において、さらに珪酸ナトリウムを樹脂分散被膜の構成成分とすることを特徴とする。\n\nまた、請求項5記載の高耐食性永久磁石は、請求項4記載の高耐食性永久磁石において、樹脂分散被膜中におけるナトリウム含量が10重量%以下であることを特徴とする。\n\nまた、請求項6記載の高耐食性永久磁石は、請求項1乃至5のいずれかに記載の高耐食性永久磁石において、樹脂分散被膜の付着量が0.01g/m2〜5.0g/m2であることを特徴とする。\n\nまた、請求項7記載の高耐食性永久磁石は、請求項1乃至6のいずれかに記載の高耐食性永久磁石において、金属を構成成分とする被膜が気相めっき法で形成された金属被膜であることを特徴とする。\n\nまた、請求項8記載の高耐食性永久磁石は、請求項7記載の高耐食性永久磁石において\n\n、金属被膜がアルミニウム被膜であることを特徴とする。\n\nまた、請求項9記載の高耐食性永久磁石は、請求項1乃至6のいずれかに記載の高耐食性永久磁石において、金属を構成成分とする被膜が亜鉛微粒子分散珪酸被膜であることを特徴とする。\n\nまた、請求項10記載の高耐食性永久磁石は、請求項1乃至9のいずれかに記載の高耐食性永久磁石において、化成処理被膜が構成元素としてジルコニウム、リン、酸素およびフッ素を含有する被膜であることを特徴とする。\n\nまた、本発明の請求項1記載の高耐食性永久磁石の製造方法は、請求項11記載の通り、希土類系永久磁石の表面に、金属を構成成分とする被膜を形成する工程と、場合によっては、さらにその表面に化成処理被膜を積層形成する工程と、ソープフリー水溶性エマルジョン樹脂を珪酸リチウム水溶液に分散させることで樹脂を0.1重量%〜5重量%、珪酸リチウムを2重量%〜30重量%含むように調製した処理液をその表面に塗装した後、加熱乾燥する工程を少なくとも含んでなることを特徴とする。\n\nまた、請求項12記載の製造方法は、請求項11記載の製造方法において、処理液中にさらに珪酸ナトリウムを含むことを特徴とする。\n\nまた、請求項13記載の製造方法は、請求項12記載の製造方法において、処理液中におけるナトリウム含量が1重量%以下であることを特徴とする。\n\n【0008】\n\n【発明の実施の形態】\n\n本発明の高耐食性永久磁石は、珪酸リチウムと樹脂を構成成分とし、樹脂が0.1重量%〜50重量%の含量で均一分散した樹脂分散被膜を、希土類系永久磁石の表面に形成した金属を構成成分とする被膜を介して、または、さらにその表面に積層形成した化成処理被膜を介して、有することを特徴とするものである。\n\n【0009】\n\n希土類系永久磁石の表面に形成する金属を構成成分とする被膜としては、例えば、気相めっき法によって形成されるアルミニウム被膜や亜鉛被膜などの金属被膜や、亜鉛微粒子分散珪酸被膜などのような公知の被膜が挙げられる。\n\n【0010】\n\n例えば、金属被膜としてアルミニウム被膜を形成するために採用することができる気相めっき法としては、真空蒸着法、イオンスパッタリング法、イオンプレーティング法などが挙げられる。アルミニウム被膜は各方法における一般的な条件にて形成すればよいが、形成される被膜の緻密性、膜厚の均一性、被膜形成速度などの観点からは真空蒸着法やイオンプレーティング法を採用することが望ましい。なお、被膜形成前に希土類系永久磁石の表面に対し、洗浄、脱脂、スパッタリングなどの公知の清浄化処理を施してもよいことは言うまでもない。被膜形成時における磁石の温度は、200℃〜500℃に設定することが望ましい。該温度が200℃未満であると磁石の表面に対して優れた密着性を有する被膜が形成されない恐れがあり、500℃を越えると被膜形成後の冷却過程で被膜に亀裂が発生し、被膜が磁石の表面から剥離する恐れがあるからである。アルミニウム被膜の膜厚は、0.01μm未満であると優れた耐食性を発揮できない恐れがあり、50μmを越えると製造コストの上昇を招く恐れがあるだけでなく、磁石の有効体積が小さくなる恐れがあるので、0.01μm〜50μmが望ましいが、0.05μm〜25μmがより望ましい。形成されたアルミニウム被膜の耐食性を向上させるためにその表面に対してピーニングを施してもよい。\n\n【0011】\n\n亜鉛微粒子分散珪酸被膜としては、例えば、結着剤として珪酸バインダを用いたジンクリッチペイント(例えば日本ダクロシャムロック社の商品名:ジオメット)を希土類系永久磁石の表面に塗布した後、乾燥することで形成することができる被膜が挙げられる。亜鉛微粒子分散珪酸被膜の膜厚は、1μm未満であると優れた耐食性を発揮できない恐れがあり、50μmを越えると製造コストの上昇を招く恐れがあるだけでなく、磁石の有効体積が小さくなる恐れがあるので、1μm〜50μmが望ましいが、5μm〜15μmがより\n\n望ましい。\n\n【0012】\n\n珪酸リチウムと樹脂を構成成分とし、樹脂が0.1重量%〜50重量%の含量で均一分散した樹脂分散被膜は、以上のような希土類系永久磁石の表面に形成した金属を構成成分とする被膜の表面に形成することで、磁石の耐食性を大幅に向上することができるが、磁石の表面に形成した金属を構成成分とする被膜の表面にさらに化成処理被膜を積層形成し、その表面にこの樹脂分散被膜を形成することで、磁石の耐食性をより大幅に向上することができる。\n\n【0013】\n\n金属を構成成分とする被膜の表面に積層形成する化成処理被膜としては、例えば、上記の特許文献1に記載された構成元素としてジルコニウム、リン、酸素およびフッ素を含有する被膜などが挙げられる。このような被膜は、ジルコニウム化合物と、リン酸、縮合リン酸、フィチン酸、フィチン酸の加水分解物およびこれらの塩から選ばれる少なくとも1種と、フッ素化合物を含有する処理液を、金属を構成成分とする被膜の表面に塗布し、加熱乾燥することによって形成することができる。このような処理液は、例えば、日本パーカライジング社製の商品名:パルコート3753や、パルコート3756MAおよびパルコート3756MBから調製することができる。例えば、このような化成処理被膜をアルミニウム被膜の表面に形成した場合、化成処理被膜は、アルミニウム被膜を介して希土類系永久磁石の表面に強固に密着しているので、膜厚が0.01μm以上であれば十分な耐食性が得られる。化成処理被膜の膜厚の上限は限定されるものではないが、磁石の十分な有効体積の確保や製造コストの観点などから、1μm以下が望ましいが、0.3μm以下がより望ましい。また、化成処理被膜中のジルコニウムの含有量は1m2上に形成される被膜あたり0.1mg〜100mgであることが望ましく、リンの含有量は1m2上に形成される被膜あたり0.1mg〜100mgであることが望ましく、酸素の含有量は1m2上に形成される被膜あたり0.2mg〜300mgであることが望ましく、フッ素の含有量は1m2上に形成される被膜あたり0.05mg〜100mgであることが望ましい。\n\n【0014】\n\n珪酸リチウムと樹脂を構成成分とし、樹脂が0.1重量%〜50重量%の含量で均一分散した樹脂分散被膜は、構成成分としてアルカリ珪酸塩の一つである珪酸リチウムを含む。珪酸リチウムを構成成分とする被膜は、一般式:Li2O·nSiO2で表される珪酸リチウムの水溶液から形成されるものであり、耐食性に優れるという特性を本質的に有する。前記一般式中におけるnはモル比(SiO2/Li2O)を意味し、本発明においては、通常、nが1.5〜10の範囲にあるものが使用される。\n\n【0015】\n\n樹脂分散被膜は、アルカリ珪酸塩として珪酸リチウムのみを構成成分とするものであってもよいが、珪酸リチウムに加えてさらに珪酸ナトリウム(水ガラス)や珪酸カリウムや珪酸アンモニウムなどを構成成分とするものであってもよい。中でも珪酸ナトリウムを被膜の構成成分とすることで、被膜形成時の良好な造膜性を確保することが可能となる。また、珪酸ナトリウムを被膜の構成成分とすれば、被膜に外傷やクラックなどが存在していても、珪酸ナトリウムが水にわずかに溶解して当該部分に浸透固化し、自己修復的耐食作用を発揮する。珪酸ナトリウムを被膜の構成成分とする場合、被膜中のその含量はナトリウム含量として10重量%以下にすることが望ましく、5重量%以下にすることがより望ましい。10重量%を越えると形成される被膜の耐水性に悪影響を及ぼすことがあり、これに起因して被膜の劣化を招く恐れがあるからである。\n\n【0016】\n\n樹脂分散被膜の構成成分たる樹脂は熱可塑性樹脂でも熱硬化性樹脂でもよい。熱可塑性樹脂としては、例えば、アクリル樹脂、アクリルスチレン樹脂、ポリエステル樹脂、ポリアミド樹脂、ポリカーボネート樹脂などが挙げられる。樹脂は樹脂分散被膜中に0.1重量%〜50重量%の含量で均一分散される。0.1重量%未満であると樹脂を均一分散させる効果が十分に発揮されないからである。一方、50重量%を越えると樹脂が表面凝集を\n\n起こしてしまい、早期に被膜の劣化が起こって希土類系永久磁石の表面に形成した金属を構成成分とする被膜や、金属を構成成分とする被膜の表面に積層形成した化成処理被膜の表面から被膜が剥離したりするからである。なお、樹脂分散被膜中に均一分散される樹脂の含量は、望ましくは1重量%〜30重量%であり、より望ましくは5重量%〜20重量%である。\n\n【0017】\n\n樹脂分散被膜は、例えば、珪酸リチウム水溶液に樹脂を分散させた処理液を調製し、この処理液を、磁石の表面に形成した金属を構成成分とする被膜や、金属を構成成分とする被膜の表面に積層形成した化成処理被膜の表面にスプレー塗装したり、処理液中に、表面に金属を構成成分とする被膜を有する磁石や金属を構成成分とする被膜を介して化成処理被膜を有する磁石を浸漬したりして浸漬塗装を行った後、60℃〜300℃の温度条件下で1分間〜120分間加熱乾燥することによって形成することができる。優れた性能を有する樹脂分散被膜を形成するためには、処理液中において樹脂を均一分散させることが肝要である。また、大量生産を念頭に置いた場合、調製される処理液は保存安定性に優れ、液寿命(ポットライフ)が長いことが理想である。以上の点に鑑みれば、珪酸リチウム水溶液に分散させる樹脂は、乳化剤(界面活性剤)が添加されていないソープフリー水溶性エマルジョン樹脂が望ましい。珪酸リチウム水溶液はアルカリ性を呈するので(pH10〜pH13:このようなpHは磁石腐食の問題を生じさせることがなく作業環境上の面においても望ましい)、樹脂を乳化剤(特にノニオン系界面活性剤)が添加された水溶性エマルジョン樹脂として分散させた場合、液中においてエマルジョン破壊が生じて樹脂のゲル化が起こることが多いため、樹脂が均一分散した処理液を調製することが困難となり、その結果、優れた性能を有する樹脂分散被膜を形成することができなくなる恐れがあるからである。また、このような処理液は当然のことながら以上のような現象に起因して液寿命の点においても劣るからである。\n\n【0018】\n\n本発明者らの検討によれば、熱可塑性樹脂としてアクリルスチレン樹脂をソープフリー水溶性エマルジョン樹脂として珪酸リチウム水溶液に分散させて調製した処理液は、処理液中におけるアクリルスチレン樹脂の均一分散性に優れるようである。従って、この処理液を使用して形成された樹脂分散被膜は、被膜中においてアクリルスチレン樹脂が均一分散し、優れた耐食性を発揮する。なお、アクリルスチレン樹脂とは、スチレンモノマーとアクリル酸エステルモノマーを重合することによって得られる樹脂を意味する。スチレンモノマーとしてはスチレンやα-メチルスチレンなどが使用され得る。アクリル酸エステルモノマーとしては、アクリル酸メチル、アクリル酸エチル、アクリル酸プロピル、アクリル酸ブチル、アクリル酸2-エチルヘキシル、メタクリル酸メチル、メタクリル酸エチル、メタクリル酸プロピル、メタクリル酸ブチル、メタクリル酸2-エチルヘキシルなどが試用され得る。好適なアクリルスチレン樹脂としては、スチレン-メタクリル酸メチル共重合体、スチレン-アクリル酸ブチル共重合体、スチレン-メタクリル酸メチル-アクリル酸ブチル共重合体、スチレン-メタクリル酸ブチルなどがある。ソープフリー水溶性エマルジョンタイプのアクリルスチレン樹脂としては、例えば、旭化成工業社製の商品名:F-2000が好適に使用される。\n\n【0019】\n\n優れた性能を有する樹脂分散被膜を形成するための好適な処理液としては、樹脂をソープフリー水溶性エマルジョン樹脂として0.1重量%〜5重量%、望ましくは0.5重量%〜3重量%含み、珪酸リチウムを2重量%〜30重量%含む処理液が挙げられ、この組成範囲内で被膜中に均一分散させる樹脂が所望含量となるように適宜調整することが望ましい。このような処理液は、水性処理液であるにもかかわらず濡れ性に優れることから、小型の希土類系永久磁石に対してはスプレータンブラー法(特開2001-210505号公報参照)にて金属を構成成分とする被膜や化成処理被膜の表面に塗布することが可能であり、塗布した後は素早く表面全体に広がって乾燥して樹脂分散被膜になるという特性を有する。また、金属を構成成分とする被膜や化成処理被膜の表面にピンホールなどの欠陥\n\nが存在する場合であっても、当該部分はこの処理液で充塞されて乾燥した後には樹脂分散被膜で封孔されることから、このような作用が希土類系永久磁石の耐食性を大幅に向上することに寄与しているものと推察される。なお、アルカリ珪酸塩としてさらに珪酸ナトリウムを処理液中に含ませる場合は、処理液中におけるナトリウム含量が1重量%以下となるようにすることが望ましい。\n\n【0020】\n\n樹脂分散被膜は、その付着量が0.01g/m2以上(膜厚にして15nm程度以上)となるように形成することが望ましい。0.01g/m2よりも少ないと耐食性被膜としての性能を十分に発揮できない恐れがあるからである。なお、付着量の上限は特段限定されるものではないが、付着量が多すぎると均一付着性の確保が困難になる恐れや被膜にクラックが生じる恐れがある。従って、以上の観点からは付着量の上限は5.0g/m2とすることが望ましい。\n\n【0021】\n\n本発明に適用される希土類系永久磁石としては、例えば、R-Fe-B系永久磁石やR-Fe-N系永久磁石などの公知の希土類系永久磁石が挙げられる。中でも、R-Fe-B系永久磁石は、前述のように、磁気特性が高く、量産性や経済性に優れている上に、被膜との優れた密着性を有する点において望ましいものである。これらの希土類系永久磁石における希土類元素(R)は、Nd、Pr、Dy、Ho、Tb、Smのうち少なくとも1種、あるいはさらに、La、Ce、Gd、Er、Eu、Tm、Yb、Lu、Yのうち少なくとも1種を含むものが望ましい。\n\nまた、通常はRのうち1種をもって足りるが、実用上は2種以上の混合物(ミッシュメタルやジジムなど)を入手上の便宜などの理由によって使用することもできる。\n\nさらに、Al、Ti、V、Cr、Mn、Bi、Nb、Ta、Mo、W、Sb、Ge、Sn、Zr、Ni、Si、Zn、Hf、Gaのうち少なくとも1種を添加することで、保磁力や減磁曲線の角型性の改善、製造性の改善、低価格化を図ることが可能となる。また、Feの一部をCoで置換することによって、得られる磁石の磁気特性を損なうことなしに温度特性を改善することができる。\n\nなお、本発明に適用される希土類系永久磁石は、焼結磁石であってもボンド磁石であってもよい。\n\n【0022】\n\nなお、樹脂分散被膜の表面に、さらに別の被膜を積層形成してもよい。このような構成を採用することによって、希土類系永久磁石の表面に形成した積層被膜の特性を増強·補完したり、更なる機能性を付与したりすることができる。\n\n【0023】\n\n【実施例】\n\n以下、本発明を実施例によってさらに詳細に説明するが、本発明はこれに限定して解釈されるものではない。なお、以下の実施例は、例えば、米国特許4770723号公報や米国特許4792368号公報に記載されているようにして、公知の鋳造インゴットを粉砕し、微粉砕後に成形、焼結、熱処理、表面加工を行うことによって得られた17Nd-1Pr-75Fe-7B組成(at%)の縦40mm×横20mm×高さ2mm寸法の平板状焼結磁石(以下、磁石体試験片と称する)を用いて行った。\n\n【0024】\n\n(実施例1)\n\n工程A:\n\n磁石体試験片に対し、真空容器内を1×10-4Pa以下に真空排気し、Arガス圧10Pa、バイアス電圧-400Vの条件下、35分間、スパッタリングを行い、表面を清浄化した。\n\n次に、Arガス圧1Pa、電圧1.5kV、磁石温度220℃の条件下、コーティング材料としてアルミニウムワイヤーを用い、アルミニウムワイヤーを加熱して蒸発させ、イオン化し、30分間、イオンプレーティング法にて、磁石体試験片の表面にアルミニウム被\n\n膜を形成し、放冷した。形成されたアルミニウム被膜の膜厚は12.8μmであった(n=3の平均値)。\n\nその後、N2ガスからなる加圧気体とともに、平均粒径120μm、モース硬度6の球状ガラスビーズ粉末を、噴射圧1.5kg/cm2にて5分間、アルミニウム被膜の表面に対して噴射して、ショットピーニングを施した。\n\n【0025】\n\n工程B:\n\n珪酸リチウム(Li2O·nSiO2:n=4.5)と珪酸ナトリウム(Na2O·nSiO2:n=3)を合計10重量%含むアルカリ珪酸塩水溶液(珪酸リチウムと珪酸ナトリウムは重量比が4:1であり、ナトリウム含量は0.4重量%)に、ソープフリー水溶性エマルジョンタイプのアクリルスチレン樹脂として商品名:F-2000(旭化成工業社製の熱可塑性樹脂)をアクリルスチレン樹脂として2.5重量%含むように添加し、スターラーにて混合攪拌することで、処理液を調製した(pHは約11)。\n\n工程Aで得られた表面にアルミニウム被膜を有する磁石体試験片をエタノールで超音波洗浄した後、以上のようにして調製した処理液に浸漬し、その後、引き上げてエアワイピングを行い、200℃で20分間加熱乾燥して磁石体試験片の表面にアルミニウム被膜を介して樹脂分散被膜を形成した。形成された樹脂分散被膜の付着量は1.4g/m2、樹脂含量は20重量%、ナトリウム含量は3.2重量%であった(いずれもn=3の平均値)。\n\n以上のようにして得た、表面にアルミニウム被膜を介して樹脂分散被膜を有する磁石体試験片3個に対してJIS  Z2371に記載の塩水噴霧試験を行ったところ、試験開始から100時間を経過しても発錆が観察されたものは存在しなかった。\n\n【0026】\n\n(比較例1)\n\n実施例1の工程Aで得られた表面にアルミニウム被膜を有する磁石体試験片3個に対してJIS  Z2371に記載の塩水噴霧試験を行ったところ、試験開始から24時間で全て発錆が観察された。\n\n【0027】\n\n(実施例2)\n\n工程A:\n\n実施例1の工程Aと同様にして磁石体試験片の表面にアルミニウム被膜を形成した。形成されたアルミニウム被膜の膜厚は11.2μmであった(n=3の平均値)。その後、実施例1の工程Aと同様にしてアルミニウム被膜の表面に対してショットピーニングを施した。\n\n【0028】\n\n工程B:\n\nパルコート3756MAおよびパルコート3756MB(いずれも商品名·日本パーカライジング社製)各10gを水1リットルに溶解し、処理液とした。この処理液に工程Aで得られた表面にアルミニウム被膜を有する磁石体試験片を温浴50℃で1分30秒間浸漬した後、120℃で20分間加熱乾燥して磁石体試験片の表面にアルミニウム被膜を介して化成処理被膜を形成した。形成された化成処理被膜の膜厚は0.07μmであり、被膜中のジルコニウム含有量は16mg(1m2上あたり)、リン含有量は11mg(同)、酸素含有量は50mg(同)、フッ素含有量は3mg(同)であった(いずれもn=3の平均値)。\n\n【0029】\n\n工程C:\n\n実施例1の工程Bと同様にして化成処理被膜の表面に樹脂分散被膜を形成した。形成された樹脂分散被膜の付着量は1.4g/m2であった(n=3の平均値)。\n\n以上のようにして得た、表面にアルミニウム被膜とその表面に積層形成した化成処理被膜を介して樹脂分散被膜を有する磁石体試験片3個に対してJIS  Z2371に記載の塩\n\n水噴霧試験を行ったところ、試験開始から200時間を経過しても発錆が観察されたものは存在しなかった。\n\n【0030】\n\n(比較例2)\n\n実施例2の工程Aと工程Bで得られた表面にアルミニウム被膜を介して化成処理被膜を有する磁石体試験片3個に対してJIS  Z2371に記載の塩水噴霧試験を行ったところ、試験開始から96時間で全て発錆が観察された。\n\n【0031】\n\n(実施例3)\n\n工程A:\n\nジオメット720(商品名:日本ダクロシャムロック社製)にエタノールにて超音波洗浄(脱脂処理)してから15分間自然乾燥させた磁石体試験片を浸漬した。処理液から取り出した磁石体試験片を遠心乾燥機に収容し、300rpmにて30秒間振り切りすることで磁石体試験片の表面に付着している余分な処理液を除去した後、100℃×5分間大気中にて仮乾燥した。こうして表面に塗布した処理液を仮乾燥させた試験片を再度処理液に浸漬した。処理液から取り出した磁石体試験片の表面に付着している余分な処理液を上記と同様にして除去した後、320℃×10分間大気中にて熱処理を行うことで磁石体試験片の表面に亜鉛微粒子分散珪酸被膜を形成した。形成された亜鉛微粒子分散珪酸被膜の膜厚は10.3μmであった(n=3の平均値)。\n\n【0032】\n\n工程B:\n\n実施例1の工程Bと同様にして亜鉛微粒子分散珪酸被膜の表面に樹脂分散被膜を形成した。形成された樹脂分散被膜の付着量は1.3g/m2であった(n=3の平均値)。\n\n以上のようにして得た、表面に亜鉛微粒子分散珪酸被膜を介して樹脂分散被膜を有する磁石体試験片3個に対してJIS  Z2371に記載の塩水噴霧試験を行ったところ、試験開始から1000時間を経過しても発錆が観察されたものは存在しなかった。\n\n【0033】\n\n(比較例3)\n\n実施例3の工程Aで得られた表面に亜鉛微粒子分散珪酸被膜を有する磁石体試験片3個に対してJIS  Z2371に記載の塩水噴霧試験を行ったところ、試験開始から800時間で全て発錆が観察された。\n\n【0034】\n\n【発明の効果】\n\n本発明によれば、苛酷環境下においても高耐食性を発揮する希土類系永久磁石およびその製造方法が提供される。', '【0001】\n\n技术领域\n\n稀土永磁体技术领域本发明涉及一种稀土永磁体,即使在恶劣的环境中也表现出高耐腐蚀性和制造方法。\n\n【0002】\n\n发明背景\n\n由ND-Fe-B永磁体和稀土基永磁体表示的R-Fe-B基永磁体如SM-Fe-N永磁体代表的R-Fe-N永磁体,是资源,因为富裕和廉价的材料使用并具有高磁性,特别是R-Fe-B永磁体在今天的各个领域中使用。\n\n然而,基于稀土的永磁体包括高度反应性稀土金属:R在大气中,在大气中容易腐蚀,并且当使用时没有任何表面处理,轻微的酸和碱和水分腐蚀从表面进行,并且发生生锈,发生生锈,这导致磁体特性的劣化和变化。此外,如果锈生成的磁铁被结合到诸如磁路的装置中,则锈蚀可以散射到污染的外围部件。\n\n因此,自古以来,以稀土基永磁体的表面上具有铝和锌的涂层的涂层形成涂层的方法是已知的。\n\n【0003】\n\n由于铝和锌相对于稀土永磁体具有牺牲防腐作用,因此含有这些金属作为组分的膜是​​有价值的耐腐蚀涂层。然而,例如,当通过气相电镀方法在稀土永磁体的表面上形成铝涂层和锌膜时,可以在膜中产生针孔,使酸和碱通过针孔腐蚀性组分如水分达到磁体的表面并引起现象,使得磁体被腐蚀。此外,这些金属通过施加牺牲腐蚀保护而洗脱或产生白色生锈。\n\n在这种情况下,存在的问题是,根据稀土的永磁体的使用环境,洗脱组分和白色锈部件成为污染物。\n\n因此,作为消除上述问题如铝涂层和锌膜的方法,例如,在以下专利文献1和专利文献2中,一种在铝膜表面上形成化学转化处理膜的方法,或已经提出了一种铝涂层,已经提出了在锌膜的表面上形成金属氧化物涂层的方法。\n\n【0004】\n\n专利文献1\n\nJP,2000-150216,2000-150216\n\n专利文献2.\n\nJP-A-2000-232011\n\n【0005】\n\n本发明要解决的问题\n\n可以评估专利文献1和专利文献2中提出的方法作为消除上述问题的方法,例如铝涂层和锌膜。然而,从在苛刻的环境下给予稀有地球的永磁磁铁的高耐腐蚀性的观点来看,近年来需要更好的方法即可等待更好的方法。\n\n因此,本发明的目的是提供一种稀土永磁体,即使在恶劣的环境下也具有高耐腐蚀性和制造方法。\n\n【0006】\n\n[解决问题的手段]\n\n由于考虑到上述点来进行各种研究,本发明人进一步用硅膜通过稀土基永磁体的表面上通过铝膜形成的复合涂层的硅酸盐涂覆。通过形成一个发现预定量的树脂均匀分散的涂层,发现可以显着改善磁体的耐腐蚀性。另外,即使当这样的涂层直接形成在稀土永磁体的表面上形成的铝涂层上时,也发现磁铁的耐腐蚀性也可以显着改善。\n\n【0007】\n\n基于上述发现,本发明的制造了本发明,并且本发明的高耐腐蚀性永磁体如权利要求1所述以及硅酸锂和硅酸锂将其分散在处理溶液中,以防止水溶性水溶性乳液树脂其中树脂的树脂分配膜在0.1%至50重量%的树脂的组分中均匀地分散在树脂的组分中,或在稀土基永磁体的表面上形成的金属分配膜或进一步形成或进一步。其特征在于它在表面上具有堆叠的复合化学转化加工涂层。\n\n另外,根据权利要求2所述的高耐腐蚀性永磁体的特征在于,所述树脂是根据权利要求1所述的高耐腐蚀性永磁体的热塑性树脂。。\n\n魔鬼索赔3描述的高耐腐蚀性永磁体2在所述高耐腐蚀性永磁体中,热塑性树脂是丙烯酸苯乙烯树脂。\n\n还,4权利要求1的上述高耐腐蚀性永磁体3在根据任何上述任一项的高耐腐蚀性永磁体中,进一步设定为树脂分配膜的组分进一步设定硅酸盐。\n\n还,5描述的高耐腐蚀性永磁体4在所述高耐腐蚀性永磁体中,其特征在于树脂分配膜中的钠含量为10重量%或更少。\n\n还,6权利要求1的上述高耐腐蚀性永磁体5在基于0.01g / m的任何树脂分配涂层中的任何一种的高耐腐蚀性永磁体中2〜5.0 g / m2它的特征在于它是。\n\n还,7权利要求1的上述高耐腐蚀性永磁体6在根据以上任一项的高耐腐蚀性永磁体中,作为组分的具有金属的膜是通过气相电镀方法形成的金属膜。\n\n还,8描述的高耐腐蚀性永磁体7在高耐腐蚀性永磁磁铁中\n\n金属涂层的特征在于它是铝膜。\n\n还,9权利要求1的上述高耐腐蚀性永磁体6在根据以上任何一个的高耐腐蚀性永磁体中,具有金属的膜是锌细颗粒分散硅酸盐膜。\n\n还,10权利要求1的上述高耐腐蚀性永磁体9在根据任何所述的高耐腐蚀性永磁体中,其特征在于化学转化膜是含有锆,磷,氧和氟作为构成元素的涂层。\n\n此外,本发明2.根据权利要求1所述的发明生产高耐腐蚀性永磁磁铁的方法是11如所描述的,形成含有金属作为稀土永磁体的组分的膜的步骤,在一些情况下,在表面上层压化学转化处理膜的步骤,通过皂水溶性乳液树脂将0.1重量%重量的树脂分散在硅酸锂水溶液中,施加0.1重量%,含有2重量%至30重量%的硅酸锂,然后至少包括加热和干燥的方法。它的特点是\n\n还,12描述的制造方法是11在所述制造方法中,其特征在于处理液中进一步含有硅酸钠。\n\n还,13描述的制造方法是12在所描述的制造方法中,其特征在于处理液中的钠含量为1重量%或更少。\n\n【0008】\n\n发明内容\n\n本发明的高耐腐蚀性永磁体具有金属分配膜,其中硅酸锂和树脂是组分,以及树脂分配膜,其中树脂均匀地分散在0.1重量%至50%的含量下重量,形成在稀土的永磁体的表面上形成的金属。其特征在于它具有在其表面上具有组分或进一步的涂层的涂层。\n\n【0009】\n\n作为含有在稀土基永磁体的表面上形成的金属的薄膜,例如,已知为金属膜,例如由蒸汽相电镀方法形成的铝膜或锌膜,硅酸盐分散硅酸盐涂层等。有一涂层\n\n【0010】\n\n例如,作为蒸汽相电镀方法,可以采用以形成铝膜作为金属膜,可以提及真空蒸发方法,离子定位方法,离子镀法等。可以在每种方法中的一般条件下形成铝涂层,但是待形成的膜的紧凑性,采用膜厚度,涂层形成速率等的均匀性进行真空蒸发和离子电镀。它是可取的做。不言而喻,稀土基永磁体的表面可以经受已知的清洁处理,例如相对于稀土基永磁体的表面洗涤,脱脂和溅射。希望将磁体的温度设定在薄膜形成至200℃至500℃。如果温度小于200℃,则不会在磁体的表面上形成具有优异粘合性的膜,并且如果它超过500℃,则在涂料后发生裂缝,并且薄膜是这样的是因为存在从磁体的表面剥离的风险。铝涂层的薄膜厚度可能不小于0.01μm,并且可能无法表现出优异的耐腐蚀性,并且如果超过50μm,则可能导致制造成本的增加,但磁铁的有效体积可能导致增加可能很小。所需的0.01μm至50μm,更期望0.05μm至25μm。可以在表面上进行缓斗以改善所形成的铝涂层的耐腐蚀性。\n\n【0011】\n\n作为锌细颗粒分散的二氧化硅涂层,例如,在施加Ginchi涂料(例如,日本Duch Sham Lock的商品名)到稀土永磁体的表面上,是Ginch Paint(例如,商品名:日本的几何Dacoisham Rock)应用于稀土基永磁体的表面,并可提及涂层。锌细颗粒分散硅酸盐膜的膜厚度可能无法表现出优异的耐腐蚀性,如果它超过1μm,并且如果超过50μm,则不仅仅是制造成本可能上升,而且是有效的磁体的体积变小,因为存在1μm至50μm,但是为5μm至15μm\n\n可取的。\n\n【0012】\n\n其中硅酸锂和树脂是构成组分的树脂分配膜,并且在0.1重量%至50重量%的含量下均匀地分散的树脂分配膜是形成在稀土永磁体的表面上的涂层。一个组件。通过在表面上形成它,可以大大改善磁体的耐腐蚀性,但是在磁体的表面上形成的金属进一步层叠在形成膜的涂层的表面上,并且该树脂施加到其表面。通过形成分散涂层,可以进一步改善磁体的耐腐蚀性。\n\n【0013】\n\n待层压在具有金属组分的膜的表面上的形成处理膜的实例包括如上所述的专利文献1中所述的锆,磷,氧和氟。这种涂层包含锆化合物,磷酸,配合酸,植酸的水解产物,至少一种选自这些盐,含有氟化合物的处理溶液,可以通过施加到表面的表面来形成涂层是组分和热和干燥。这种加工液可以由例如由Nippon Parkarizing,脉动3753,脉动3756mA和脉动3756MB制造的商品名来制备。例如,当在铝膜的表面上形成这样的化学转化处理涂层时,化学转化处理膜通过铝膜牢固地粘附到稀土永磁体的表面上,因此膜厚度为0.01μm或更多。如果是这样,则获得足够的耐腐蚀性。尽管膜厚度膜的膜厚的上限不受限制,但从固定磁体的有效体积的观点和制造成本的观点来看,期望1μm或更小,但更优选为0.3μm或更小。此外,化学转化涂层中锆的含量为1米2在上面形成的每个涂层期望是0.1mg至100mg,并且磷的含量为1μm。2期望在上面形成的每涂层0.1mg至100mg,氧气的含量为1米2在上面形成的每个涂层是期望的0.2mg至300mg,氟的含量为1米2期望其在上面形成的每膜是0.05mg至100mg。\n\n【0014】\n\n其中硅酸锂和树脂是成分的树脂分配膜,并以0.1%至50重量%的树脂含量均匀分散,含有硅酸锂,其是作为组分的碱硅酸盐之一。含硅酸锂作为组分的涂料是通式:李2o·nsio.2它由由表示的硅酸锂水溶液形成,并且特性基本上具有优异的耐腐蚀性。在通式N中是摩尔比(SIO2/李2在本发明中,在本发明中,使用n在1.5至10的范围内。\n\n【0015】\n\n在树脂分散涂层中,仅使用硅酸锂作为碱硅酸盐,但除硅酸锂外,硅酸钠(水玻璃),硅酸钠,硅酸钠,硅酸钠等用作组分。可以是。其中,涂层的组成是涂层的组分,因此可以确保膜形成时的良好膜形成性能。另外,如果硅酸钠是涂层的组分,即使在薄膜中存在创伤或裂缝,硅酸钠也会略微溶解在水中,渗透到部分,并展示自修复耐腐蚀性。当硅酸钠是涂层的组分时,希望将涂层中的含量以10重量%或更少作为钠含量制备,更优选为5重量%或更少。当超过10重量%时,可能对待形成的膜的耐水性产生不利影响,这可能导致膜的劣化。\n\n【0016】\n\n树脂分配膜构成树脂可以是热塑性树脂或热固性树脂。热塑性树脂的实例包括丙烯酸树脂,丙烯烯树脂,聚酯树脂,聚酰胺树脂,聚碳酸酯树脂等。树脂均匀地分散在树脂分配膜中,含量为0.1%至50重量%。如果小于0.1重量%,则不充分地表现出均匀分散树脂的效果。另一方面,如果它超过50重量%,则树脂是表面聚集\n\n从具有金属组分的涂层表面上形成的涂层处理涂层的表面,作为具有金属基永磁体的膜的组分和具有在稀土永磁体的表面上形成的金属的金属早期发生早期,并且将薄膜层压在形成在稀土基永磁体的表面上形成的涂层表面上的涂层的表面。因为它被剥离。均匀地分散在树脂分配涂层中的树脂的含量理想地是1%至30重量%,更优选为5%至20重量%。\n\n【0017】\n\n树脂分散膜制备,例如,具有薄膜的涂层,其中树脂分散在硅酸锂水溶液中,以及具有在磁体表面上形成的金属的薄膜和具有金属组分作为组分的膜。具有涂层处理的涂层的磁体,所述涂层具有涂层的涂层,所述涂层具有涂层和具有金属组分的涂层作为具有组分的组分作为所述表面上的组分的组分,或所述金属在表面上形成具有金属组分的涂层作为其中构成到表面的组分的涂层。在浸渍并沉积并沉积并在温度条件下加热和干燥1分钟至120分钟后,可以通过60℃至300°C。为了形成具有优异性能的树脂分配涂层,重要的是将树脂均匀地分散在处理液中。此外,如果考虑到批量生产,则待准备的加工解决方案是液体寿命(盆栽)较长且更长的理想选择。鉴于上述点,分散在硅酸锂水溶液中的树脂优选是没有乳化剂(表面活性剂)的皂水溶性乳液树脂。由于硅酸锂水溶液表现出碱性(pH10至pH13:这种pH不会引起磁体腐蚀的问题,因此在工作环境中也希望,并且当分散时,树脂是乳化剂(特别是非离子表面活性剂)。添加的水溶性乳液树脂,由于乳液破损通常在液体中产生,并且通常引起树脂的凝胶化,因此难以制备一种处理的溶液,其中树脂均匀地分散,结果是因为存在具有优异性能的树脂分配涂层不能形成。此外,这种加工液是由于上述现象引起的上述现象的自然。\n\n【0018】\n\n根据本发明人的研究,通过将丙烯酰基树脂作为皂化的水溶性乳液树脂作为热塑性树脂分散作为皂的水溶性乳液树脂制备的处理液,并制备的处理溶液在丙烯炔树脂中均匀地分散治疗液。它似乎是优秀的。因此,使用该处理液形成的树脂分配膜均匀地将丙烯烯树脂均匀地分散在薄膜中,并且表现出优异的耐腐蚀性。丙烯酸苯乙烯树脂是指通过聚合苯乙烯单体和丙烯酸酯单体而获得的树脂。苯乙烯或α-甲基苯乙烯可用作苯乙烯单体。 As acrylic acid ester monomers, methyl acrylate, ethyl acrylate, propyl acrylate, butyl acrylate, methyl acrylate, methyl acrylate, methyl methacrylate, propyl methacrylate, methacrylate, meth-clylate 2-ethylhexyl methacrylate, methacrylic acid 2-ethylhexyl And etc. can be试过。合适的丙烯酸苯乙烯树脂包括苯乙烯 - 甲基丙烯酸酯共聚物,苯乙烯 - 丙烯酸共聚物,甲基苯乙烯 - 甲基丙烯酸甲酯 - 丙烯酸丁酯共聚物,苯乙烯 - 甲基丙烯酸丁酯。作为一种无水溶解乳液型丙烯酸苯乙烯树脂,例如,优选使用由Asahi Kasei Industrial Co.,Ltd。制造的商品名F-2000。\n\n【0019】\n\n作为形成具有优异性能的树脂分配膜的合适的处理液,树脂为0.1%至5重量%,作为无皂水溶性乳液树脂,优选0.5重量%至3重量%,硅酸锂可列举出含有2%至30重量%的处理液,并且希望适当地调节树脂待均匀地分散在组成范围内的涂层中。这种加工溶液在润湿性方面优异,尽管水敏处理液体,使得金属用作小尺寸的稀土基永磁体(JP-A-2001-210505)。可以申请涂层的表面和形成处理涂层是组分,并且在施加之后,它具有它的特性,即它快速地延伸并干燥到树脂分配膜上。此外,涂层表面和化学处理涂层的缺陷等缺陷如组件\n\n即使存在填充该处理溶液并干燥然后用树脂分配膜密封的情况,这种作用大大提高了稀土的永磁体的耐腐蚀,推测它有助于。当处理液中进一步包含硅酸钠作为碱硅酸盐盐时,希望将处理液中的钠含量为1重量%或更少。\n\n【0020】\n\n树脂分配膜的粘附量为0.01g / m2如上所述,希望形成为约15nm或更大的形式。 0.01克/米2如果小于,则可能无法充分表现出作为耐腐蚀膜的性能。尽管粘合量的上限不受限制,但如果粘合的量太大,则可能难以确保均匀的粘合性,并且存在可能发生裂缝的可能性。因此,从上面的观点来看,附着量的上限为5.0g / m2是理想的。\n\n【0021】\n\n施加到本发明的稀土基永磁体的实例包括已知的稀土基永磁体,例如基于R-Fe-B基的永磁体和R-Fe-N永磁体。其中,如上所述,如上所述,如上所述,希望它具有优异的粘附性,并且具有优异的质量生产率和经济性。这些稀土永磁体中的稀土元素(R)是Nd,Pr,Dy,Dy,Ho,Tb,Sm和La,Ce,Gd,ER,欧盟,Tm,Yb,Lu中的至少一种,是理想的包括至少一个Y.\n\n另外,尽管它通常足够的RS,两个或更多个混合物(例如混合金属,Dijim等)可以用于实际使用,但为方便起见。\n\n此外,通过添加Al,Ti,V,Cr,Mn,Bi,Nb,Ta,Mo,W,Sb,Ge,Sn,Zr,Ni,Si,Zn,HF和Ga,也是可能的提高胁迫力的大规模和退磁曲线,提高可制造性,降低价格。此外,通过用CO替换FE的一部分,可以提高温度特性而不会影响所得磁体的磁性。\n\n注意,施加到本发明的稀土基永磁体可以是烧结磁体或粘合磁体。\n\n【0022】\n\n注意,可以在树脂分配涂层的表面上形成另一涂层。通过采用这样的配置,可以提高稀土永磁体的表面上形成的层压涂层的特性,并且可以赋予互补的互补,或者可以赋予进一步的功能。\n\n【0023】\n\n【例子】\n\n在下文中,将通过实施例更详细地描述本发明,但是本发明不旨在解释。在以下实施例中,例如,如美国专利No.5,522,587中所述,在微粒后,被粉碎,烧结,热处理,表面处理,如美国专利No.。美国专利号4,770,723和美国专利No.美国专利号4,792,368。 17ND-1PR-75FE-7B(以%)×20mm宽×2mm尺寸的扁平形烧结磁体(下文中称为磁体样本)米场。\n\n【0024】\n\n(例1)\n\n步骤a:\n\n1×10真空容器相对于磁铁标本-4对PA或更小进行真空抽空,在AR气体压力10Pa,偏置电压-400V的条件下进行溅射35分钟,并清洁表面。\n\n接下来,在Ar气体压力1Pa的条件下,使用铝线作为涂层材料的1.5kV的电压和磁体温度220℃,铝线被加热,蒸发,并进行电离30分钟,并通过离子电镀方法,铝覆盖在磁铁标本的表面上\n\n形成薄膜并使其冷却。所形成的铝涂层的膜厚度为12.8μm(N = 3的平均值)。\n\n然后是n2将来自气体的气体加压气体的平均粒径为120μm和驼背硬度6的球形玻璃珠与来自气体的气体加压气体为1.5kg / cm。2注射到铝涂层的表面5分钟,进行喷丸。\n\n【0025】\n\n步骤B:\n\n硅酸锂(锂2o·nsio.2:n = 4.5)和硅酸钠(Na2o·nsio.2(n = 3)总共10重量%的碱硅酸盐溶液(硅酸锂和硅酸钠为4:1重量比,钠含量为0.4重量%),无菌水溶性乳液型丙烯酸苯乙烯树脂作为a产品名称:F-2000(Asahi Kasei Industrial Co.,Ltd。制造的热塑性树脂)加入含有2.5重量%的丙烯酸丁烯树脂,并通过用搅拌器混合和搅拌来制备处理溶液(pH值11)。\n\n在通过在步骤A中获得的表面上获得的铝涂层进行超声波洗涤后,用乙醇洗涤,浸泡在如上所述制备的处理溶液中,然后进行空气擦拭,并进行空气擦拭。加热并干燥20分钟通过在磁体试验片的表面上通过铝膜形成树脂分配膜。形成的树脂分配涂层的粘合量为1.4g / m2树脂含量为20重量%,钠含量为3.2重量%(两者均匀= 3)。\n\n根据JIS Z2371的盐喷雾试验在JIS Z2371的表面上相对于树脂分配膜的表面进行,通过铝膜,100小时从测试开始时通过。没有人观察到的。\n\n【0026】\n\n比较例1\n\n在实施例1的步骤a的步骤A的表面上进行了根据JIS Z2371的盐雾试验后,在JIS Z2371的3次尾标本上进行JIS Z2371中描述的盐喷雾试验,并观察到所有测试开始在24小时内。稻田。\n\n【0027】\n\n(例2)\n\n步骤a:\n\n以与实施例1的步骤a相同的方式在磁体试样的表面上形成铝涂层。形成的铝涂层的膜厚度为11.2μm(n = 3的平均值)。此后,以与实施例1的步骤a相同的方式在铝涂层的表面上进行喷丸。\n\n【0028】\n\n步骤B:\n\nPalcoat 3756 MA和Palcoat 3756 MB(所有产品名称和日本的重症)每10克溶解在1升水中并用作治疗溶液。浸没在步骤A的步骤A的表面上具有1分钟和30秒的表面上具有铝涂层的磁体试验片,将温度浸入50℃下1分钟,然后加热至干燥20分钟干燥磁体样品的表面。通过涂层形成配混涂膜的铝。形成的化合物处理薄膜的膜厚度为0.07μm,薄膜中的锆含量为16mg(1米)2磷含量为11mg(相同),氧含量为50mg(相同),氟含量为3mg(相同)(n = 3)。\n\n【0029】\n\n步骤c:\n\n以与实施例1的步骤B相同的方式,在化学转化处理涂层的表面上形成树脂分配膜。形成的树脂分配涂层的粘合量为1.4g / m2(n = 3的平均值)。\n\n根据JIS Z2371的盐,具有树脂分配膜,其通过形成在表面上的表面上的配混涂层和层叠在其表面上的表面上,如上所述。\n\n进行喷水试验时,在试验开始后200小时后没有物质生锈的东西。\n\n【0030】\n\n比较例2\n\n当在JIS Z2371中描述的盐雾试验在实施例2的表面上进行时,通过通过铝膜通过铝膜通过铝膜获得的表面,根据JIS Z2371的盐喷雾试验从测试。一切都在96小时内观察起来。\n\n【0031】\n\n(例3)\n\n步骤a:\n\nGeomet 720(商品名:Mammeto-Dochambrook Co.,Ltd。)浸入乙醇中15分钟,然后浸入15分钟。通过容纳从处理溶液中提取的磁体样本来除去附着在磁体样品的表面上的额外处理溶液,通过分离磁体试验片的表面来连接到磁体样品的表面上的额外处理溶液通过将表面在300rpm下将表面分离30秒,在300℃下将表面分离30秒,将其在空气气氛中临时干燥。经受施加到表面的处理溶液的测试片再次在处理溶液中进行处理过的溶液。除了从加工溶液中提取的磁体试验片的表面附着的额外处理液之后,在除去相同的上述后,通过在大气中进行热处理320℃的热处理来进行磁体样品的表面。10分钟。形成锌细颗粒分散的硅胶膜。形成的锌细颗粒分散硅酸盐涂层的膜厚度为10.3μm(平均值为n = 3)。\n\n【0032】\n\n步骤B:\n\n以与实施例1的步骤B相同的方式,在锌细颗粒分散硅酸盐膜的表面上形成树脂分配膜。形成的树脂分配涂层的粘合量为1.3g / m2(n = 3的平均值)。\n\n根据JIS Z2371的盐雾试验在SIS Z2371的表面上进行三个磁铁型试验片,其通过锌细颗粒分散硅酸盐膜具有树脂分配膜,从测试开始1000小时。没有即使在通过后观察到的那个。\n\n【0033】\n\n(比较例3)\n\n当在通过实施例3的步骤A获得的表面上进行JIS Z2371中描述的盐喷雾试验时,JIS Z2371中描述的盐喷雾试验在JIS Z2371的3次尾试验中,距离800小时开始测试。被观察到。\n\n【0034】\n\n【发明效果】\n\n根据本发明,提供了一种稀土基永磁体,即使在恶劣的环境中也表现出高耐腐蚀性和制造方法。');
INSERT INTO `os_patent_instruction_text` VALUES (12979, 22808, 'TECHNICAL FIELD \n\n[0001]The present invention relates to a rare-earth-iron-boron based alloy, a sintered magnet, and methods of making them.\n\nBACKGROUND ART \n\n[0002]A rare-earth-iron-boron based rare-earth magnet (which will be sometimes referred to herein as an \"R-Fe-B based magnet\") is atypical high-performance permanent magnet, has astructu re including, as a main phase, an R 2 Fe 14 B-type crystalline phase, which is a ternary tetragonal compound, and exhibits excellent magnet performance. In R 2 Fe 14 B, R is at least one element selected from the group consisting of the rare-earth elements and yttrium and portions of Fe and B may be replaced with other elements.\n\n[0003]Such R-Fe-B based magnets are roughly classifiable into sintered magnets and bonded magnets. A sintered magnet is produced by compacting a fine powder of an R-Fe-B based magnet alloy (with a mean particle size of several µm) with a press machine and then sintering the resultant compact. On the other hand, a bonded magnet is usually produced by compacting a compound of a powder of an R-Fe-B based magnet alloy (with particle sizes of about 100 µm) and a binder resin within a press machine.\n\n[0004]A powder for use to produce such an R-Fe-B based magnet is made by pulverizing an R-Fe-B based magnet alloy. In the prior art, such an R-Fe-B based magnet alloy has been made either by an ingot process using a die casting technique or by a strip casting process for rapidly cooling a molten alloy with a chill roller.\n\n[0005]In the alloy prepared by the ingot process, Fe primary crystals, crystallized while the melt is being gradually cooled, remains as α-Fe in the structure, thus decreasing the pulverization efficiency or the coercivity of the resultant magnet significantly. To overcome this problem, a solution treatment must be carried out to remove Fe from the alloy obtained by the ingot process. The solution treatment is a heat treatment to be conducted at an elevated temperature exceeding 1,000 °C for a long time, which should make the productivity decline and should raise the manufacturing cost. In addition, in the process step of sintering an alloy powder in the ingot process, local low-melting phases to be liquid phases are present here and there. Accordingly, unless the sintering temperature is set high and unless the sintering time is set long, a sufficient sintered density cannot be achieved. As a result, main-phase crystal grains grow excessively during the sintering process, thus making it difficult to obtain a sintered magnet with high coercivity.\n\n[0006]In contrast, in the alloy prepared by the strip casting process, the molten alloy is rapidly cooled and solidified by a chill roller, for example. Thus, the resultant structure can have a desired small grain size. As a result, a rapidly solidified alloy, in which low-melting grain boundary phases to be liquid phases during the sintering process are distributed uniformly and finely, can be obtained. If those grain boundary phases are distributed uniformly and finely in the alloy, then main and grain boundary phases are highly likely to be in contact with each other in the powder particles obtained by pulverizing the alloy. Thus, the grain boundary phases turn into liquid phases smoothly in the sintering process, thereby advancing the sintering process quickly. Consequently, the sintering temperature can be lowered, the sintering time can be shortened, and a sintered magnet exhibiting high coercivity can be obtained with the excessive growth of crystal grains minimized. In addition, in the strip casting process, almost no α-Fe is crystallized in the rapidly solidified alloy, and therefore, there is no longer any need to carry out the solution treatment.\n\n[0007]In the strip-cast alloy, however, the structure is so fine that it is difficult to finely pulverize the respective powder particles to single crystalline grains. If the powder particles are polycrystalline, then the degree of magnetic anisotropy is low. In that case, even if the powder particles are aligned, compressed and compacted under a magnetic field, a desired sintered magnet, in which the main phase has been aligned to such a degree as to achieve a high remanence, cannot be produced.\n\n[0008]Meanwhile, to increase the heat resistance of R-Fe-B based sintered magnets and keep their coercivity high enough even at a high temperature, Dy has often been added to the material alloy. Dy is a rare-earth element, which has the effect of increasing the magnetic anisotropy of an R 2 Fe 14 B phase that is the main phase of an R-Fe-B based sintered magnet. However, Dy is an element of which the supply is very limited. Accordingly, if electric cars are popularized so much in the near future as to generate higher and higher demand for refractory magnets for use in a motor for an electric car, for example, then the resources of Dy will be on the verge of being exhausted soon and there will be a deep concern about a steep rise in material cost. In view of this potential situation, techniques for reducing the amount of Dy to be addedto a high-coercivity magnet must be developed as soon as possible to cope with such a demand. Nevertheless, in a strip-cast alloy, even if heavy rare-earth elements such as Dy are added thereto to increase the coercivity, for example, those heavy rare-earth elements will also be distributed in the grain boundary phases and the concentration of the heavy rare-earth elements in the main phase will decrease, which is also a problem. A heavy rare-earth element such as Dy cannot contribute to improving the magnet performance unless that element is included in the main phase as disclosed in JP-A-07-122413,EP-A2-994493 or in JP-A-08-013078 If the rapid cooling rate of the molten alloy is sufficiently low, Dy tends to be absorbed into, and settled in, the main phase. However, if the cooling rate is relatively high as in the strip casting process, then Dy will not be allowed enough time to diffuse from the grain boundary portions into the main phase while the molten alloy is being solidified. To avoid these problems, a method of condensing Dy in the main phase by lowering the cooling rate of the molten alloy may be adopted. But if the molten alloy were cooled at a decreased rate, then the crystal grains would increase their sizes too much and α-Fe should be produced as already described for the ingot alloy.\n\n[0009]In order to overcome the problems described above, an object of the present invention is to provide a rare-earth-iron-boron based alloy powder, in which a heavy rare-earth element such as Dy is present at a higher concentration in the main phase than in the grain boundary phases and which can be sintered easily, and a method of making such an alloy powder.\n\n[0010]Another object of the present invention is to provide a material alloy for the powder, a sintered magnet made from the powder, and methods of making them.\n\nDISCLOSURE OF INVENTION \n\n[0011]A rare-earth-iron-boron based magnet alloy disclosed in claim 1, according to the present invention includes, as a main phase, a plurality of R 2 Fe 14 B type crystals (where R is at least one element selected from the group consisting of the rare-earth elements and yttrium) in which rare-earth-rich phases are dispersed. The main phase includes Dy and/or Tb at a higher concentration than a grain boundary phase does.\n\n[0012]The alloy includes 2.5 mass% to 15 mass% of Dy and/or Tb.\n\n[0013]The ratio of Dy and/or Tb to the main phase is at least 1.03 times as high as the ratio of Dy and/or Tb to the overall alloy.\n\n[0014]In a preferred embodiment, the alloy includes at most 5 vol% of α-Fe phase.\n\n[0015]The alloy includes 27\n\n[0016]The alloy includes 27 mass% to 35 mass% of the rare-earth element.\n\n[0017]A rare-earth-iron-boron based magnet alloy powder according to the present invention is obtained by pulverizing any of the alloys described above.\n\n[0018]A sintered magnet according to the present invention is made from the rare-earth-iron-boron based magnet alloy powder described above.\n\n[0019]A method of making a rare-earth-iron-boron based magnet alloy as disclosed in claim 6, according to the present invention includes the steps of: preparing a melt of a rare-earth-iron-boron based alloy; and making a solidified alloy by quenching the melt. The step of making the solidified alloy includes the step of forming a solidified alloy layer, including, as a main phase, a plurality of R 2 Fe 14 B-type crystals (where R is at least one element selected from the group consisting of the rare-earth elements and yttrium) in which rare-earth-rich phases are dispersed, by quenching the melt through contact with a cooling member. The main phase includes Dy and/or Tb at a higher concentration than a grain boundary phase does.\n\n[0020]The alloy includes 2.5 mass% to 15 mass% of Dy and/or Tb.\n\n[0021]The ratio of Dy and/or Tb to the main phase is at least 1.03 times as high as the ratio of Dy and/or Tb to the overall alloy.\n\n[0022]The step of forming the solidified alloy layer includes forming a first texture layer in contact with the cooling member and then further feeding the melt onto the first texture layer to grow the R 2 Fe 14 B-type crystals on the first texture layer, thereby forming a second texture layer thereon.\n\n[0023]In forming the first texture layer, the melt is quenched at a rate of 10 °C /s to 1,000 °C/s and at a supercooling temperature of 100 °C to 300 °C. In forming the second texture layer, the melt is quenched at a rate of 1 °C/s to 500 °C/s. The cooling rate of the molten alloy while the second texture layer is being formed is lower than that of the molten alloy while the first texture layer is being formed.\n\n[0024]In another preferred embodiment, the R 2 Fe 14 B-type crystals have an average minor-axis size of at least 20 µm and an average major-axis size of at least 100 µm.\n\n[0025]In another preferred embodiment, the rare-earth-rich phases are dispersed at an average interval of 10 µm or less in the R 2 Fe 14 B-type crystals.\n\n[0026]The solidified alloy includes at most 5 vol% of α-Fe phase.\n\n[0027]The rare-earth element included in the solidified alloy has a concentration of 27 mass% to 35 mass%.\n\n[0028]In a preferred embodiment, the solidified alloy layer is formed by a centrifugal casting process.\n\n[0029]A method of making a magnet powder for a sintered magnet according to the present invention includes the steps of: preparing the rare-earth-iron-boron based magnet alloy by any of the methods described above; and pulverizing the alloy.\n\n[0030]A method for producing a sintered magnet according to the present invention includes the steps of: preparing the rare-earth-iron-boron based magnet alloy powder described above; compressing the powder under an aligning magnetic field to make a compact; and sintering the compact.\n\nBRIEF DESCRIPTION OF DRAWINGS \n\n[0031] FIGS. 1(a) through 1(d) are cross-sectional views schematically illustrating how a rare-earth-iron-boron based magnet alloy for use to make a magnet powder according to the present invention forms its structure. FIGS. 2(a) through 2(c) are cross-sectional views schematically illustrating how the structure of a rare-earth-iron-boron based magnet alloy is formed by a strip casting process. FIGS. 3(a) through 3(d) are cross-sectional views schematically illustrating how the structure of a rare-earth-iron-boron based magnet alloy is formed by a conventional ingot process. FIG. 4 is a graph showing the magnetization characteristics of sintered magnets representing a specific example of the present invention and a comparative example, in which the abscissa represents the strength of a magnetizing field applied to the sintered magnet and the ordinate represents the magnetizing percentage. FIG. 5 is a polarizing micrograph of a rare-earth-iron-boron based magnet alloy according to the present invention showing a texture cross section near its surface contacting with a cooling member. FIG. 6 is a polarizing micrograph of a rare-earth-iron-boron based magnet alloy according to the present invention showing a texture cross section of a center portion in the thickness direction. \n\nBEST MODE FOR CARRYING OUT THE INVENTION \n\n[0032]The present inventors estimated concentration distributions of Dy in rare-earth-iron-boron based magnet alloys with various textures and structures. As a result, we discovered that Dy was present at a higher concentration in the main phase (i.e., R 2 Fe 14 B type crystals) than in the grain boundary phase in the rare-earth-iron-boron based magnet alloy having a structure such as that shown in FIG. 1(d)\n\n[0033]FIG. 1(d) schematically illustrates the structure of a rare-earth-iron-boron based magnet alloy according to the present invention. This alloy has a structure in which very small rare-earth-rich phases (shown as black dotted regions in FIG. 1(d)) are dispersed in relatively coarse columnar crystals. Such an alloy including a plurality of columnar crystals, in which the rare-earth-rich phases are dispersed, can be formed by cooling and solidifying a melt of a rare-earth-iron-boron based alloy through contact with a cooling member. The composition of the alloy is characterized by R1 x1 R2 x2 T 100-x1-n2-y-z Q y M z  (in mass percentages) where R1 is at least one element selected from the group consisting of the rare-earth elements (except R2) and yttrium, T is Fe and/or Co, Q is at least one element selected from the group consisting of B (boron) and C (carbon), R2 is at least one element selected from the group consisting of Dy and Tb, M is at least one element selected from the group consisting of Al, Ti, V, Cr, Mn, Ni, Cu, Zn, Ga, Zr, Nb, Mo, In, Sn, Hf, Ta, W and Pb, and a portion of B may be replaced with N, Si, P and/or S, then 27 ≦ x1 +x2+ x2 ≦35, 0. 95 ≦ y ≦ 1.05, 2.5 ≦ x2 ≦ 15 and 0.1 ≦ z ≦ 2 (where x, y and z represent mass percentages) are satisfied.\n\n[0034]Hereinafter, a preferred method of making the alloy will be described in detail with reference to FIGS. 1(a) through 1(d).\n\n[0035]First, as shown in FIG. 1(a), the molten alloy L is brought into contact with a cooling member (e.g., a copper chill plate or chill roller), thereby forming a thin first texture layer, including very small primary crystals (of R 2 Fe 14 B), on its side in contact with the cooling member. After the first texture layer has been formed or while the first texture layer is being formed, the molten alloy L is further fed onto the first texture layer, thereby growing columnar crystals (i.e., R 2 Fe 14 B type crystals) on the first texture layer (see FIG. 1(b)). These columnar crystals are formed by continuously feeding the molten alloy but cooling the molten alloy at a lower cooling rate than the initial one. As a result, as shown in FIG. 1(c), the solidification advances before the rare-earth element, included in the molten alloy supplied relatively slowly, diffuses and reaches the grain boundary of those underlying coarse columnar crystals, thus rapidly growing the columnar crystals in which the rare-earth-rich phases are dispersed. By setting the cooling rate relatively high while primary crystals are being formed during an early stage of the solidification process and by slowing down the cooling rate during the subsequent crystal growth, the second texture layer, including excessively large columnar crystals, can be obtained in the end as shown in FIG. 1(d).\n\n[0036]The second texture layer is cooled on the high-temperature first texture layer that has just been solidified. Accordingly, just by controlling the melt feeding rate, the cooling rate of the second texture layer can be set lower than that of the first texture layer without using any special means.\n\n[0037]In forming the first texture layer as an aggregation of very small primary crystals, the molten alloy is cooled at a rate of 10 °C/s to 1,000 °C/s and at a supercooling temperature of 100 °C to 300 °C. The supercooling can minimize the nucleation of the Fe primary crystals. On the other hand, in forming the second texture layer, the molten alloy is cooled at a rate of 1 °C/s to 500 °C/s while being fed continuously.\n\n[0038]The cooling rate is adjusted according to the rate of feeding the melt onto the cooling member. Thus, to obtain the structure described above, it is important to adopt a cooling method that allows for adjustment of the melt feeding rate. More specifically, to obtain the structure of the present invention, the melt is preferably constantly fed little by little onto a cooling member (such as a casting mold). For that reason, a cooling process of scattering or atomizing droplets of the melt is preferably carried out. For example, a method of atomizing a melt flow by blowing a gas jet against it or a method of scattering the droplets with centrifugal force may be adopted.\n\n[0039]Another point in the melt quenching method of the present invention is to collect the produced melt droplets on the cooling member at a high yield (i.e., use the droplets efficiently enough to make a solidified alloy). To increase the yield, a method of blowing the melt droplets onto a flat-plate cooling member or a water-cooled mold with a gas spray or a method of scattering the melt droplets againstthe inner walls of a rotating cylindrical drum-like cooling member (i.e., a centrifugal casting process) is preferably adopted. Alternatively, a method of producing the melt droplets by a rotating electrode method and depositing them on the cooling member may also be adopted. In any case, the point is to create crystal nuclei in the areas to contact with the cooling member and to feed a molten alloy thereon relatively slowly. In this manner, the special structure described above can be formed with an adequate balance struck between the quantity of heat to be dissipated during the cooling process and the melt feeding rate.\n\n[0040]According to the cooling process described above, large columnar crystals with an average minor-axis size of 20 µm or more and an average major-axis size of 100 µm or more can be grown. The rare-earth-rich phases, dispersed in the columnar crystals, preferably have an average interval of 10 µm or less.\n\n[0041]No solidified alloy with such a texture and structure could be obtained by any conventional method such as a strip casting process or an alloy ingot process. Hereinafter, it will be described how crystals grow in a solidified alloy to be a rare-earth-iron-boron magnet alloy (which will be simply referred to herein as a \"solidified alloy\") by a conventional process.\n\n[0042]First, it will be described with reference to FIGS. 2(a) through 2(c) how crystals grow in a strip casting process. A strip casting process results in a relatively high cooling rate. Accordingly, a molten alloy L, having contacted with the outer surface of a cooling member such as a chill roller that is rotating at a high speed, is rapidly cooled and solidified from its contact surface. To achieve a high cooling rate, the amount of the molten alloy L needs to be decreased. Also, considering the mechanism of the strip caster, the molten alloy cannot be supplied sequentially. Accordingly, the thickness of the molten alloy L on the cooling member does not increase, but remains substantially constant, throughout the quenching process. In the molten alloy L with such a constant thickness, the crystal growth advances rapidly from the surface contacting with the cooling member. Since the cooling rate is high, the minor-axis sizes of the columnar crystals are small as shown in FIGS. 2(a) through 2(c), and the resultant solidified alloy has a fine structure. The rare-earth-rich phases are not present inside of the columnar texture but are dispersed on the grain boundary. In the strip-cast alloy, the crystal grains have such small sizes that regions with aligned crystal orientation are small. Accordingly, the magnetic anisotropy of the respective powder particles decrease.\n\n[0043]Next, it will be described with reference to FIGS. 3(a) through 3(d) how crystals grow in a conventional ingot process. An ingot process results in a relatively low cooling rate. Accordingly, a molten alloy L, having contacted with a cooling member, is slowly cooled and solidified from that contact surface. Inside of the still molten alloy L, first, Fe primary crystals are produced on the surface contacting with the cooling member and then dendritic crystals of Fe are going to grow as shown in FIGS. 3(b) and 3(c). An R 2 Fe 14 B type crystalline phase is finally formed by a peritectic reaction but still includes some α-Fe phases that would deteriorate the magnet performance. The solidified alloy has a coarse structure and includes more than 5 vol% of big α-Fe phases. To decrease the α-Fe, a homogenizing process needs to be carried out. Specifically, by diffusing and eliminating the α-Fe and R 2 Fe 17  phases in the ingot alloy as much as possible, the resultant structure should be made to consist essentially of the R 2 Fe 14 B and R-rich phases only. The homogenizing heat treatment is carried out at a temperature of 1,100 °C to 1,200 °C for 1 to 48 hours within either an inert atmosphere (except a nitrogen atmosphere) or a vacuum. Such a homogenizing treatment adversely increases the manufacturing cost. Meanwhile, to minimize the production of the α-Fe, the mole fraction of the rare-earth element included in the material alloy needs to be sufficiently greater than that defined by stoichiometry. However, if the mole fraction of the rare-earth element is increased, then the remanence of the resultant magnet will decrease and the corrosion resistance thereof will deteriorate, which are problems.\n\n[0044]On the other hand, the rare-earth-iron-boron based magnet alloy for use in the present invention (see FIG. 1) includes a rare-earth element at a mole fraction close to that defined by stoichiometry, but is less likely to produce α-Fe, which is advantageous. Accordingly, the rare-earth content can be reduced than that of the conventional process. Also, the alloy for use in the present invention has a metallographic structure including columnar crystals in which the rare-earth-rich phases are dispersed. For that reason, when the alloy is pulverized into powder particles, rare-earth-rich phases to turn into liquid phases easily are more likely to appear on the surface of the powder particles. As a result, sintering is achieved to a sufficient degree at a lower temperature and in a shorter time than the conventional process and the excessive grain growth during the sintering process can be minimized. In addition, the rare-earth-rich phases are finely dispersed in the columnar crystals, and therefore, the probability of losing the rare-earth-rich phases as superfine powder in the pulverizing process decreases, too.\n\n[0045]Furthermore, in the alloy for use in the present invention, Dy and Tb added are likely to be concentrated in the main phase rather than on the grain boundary as described above. This is because the cooling rate of the molten alloy is lower than that achieved by the strip casting process and Dy and Tb are introduced into the main phase more easily. Thus, in the present invention, even if the concentration of Dy or Tb, which is one of rare natural resources, is defined to fall within the range of 2.5 mass% to 15 mass%, the effects achieved by that addition are comparable to a situation where the concentration of Dy or Tb is set to 3.0 mass% to 16 mass% in a conventional strip-cast alloy.\n\n[0046]As described above, by using the alloy made by the method shown in FIG. 1, the powder can be sintered more efficiently, the rare natural resource such as Dy can function more effectively, and a sintered magnet with excellent coercivity can be provided at a reduced cost. Furthermore, none of the problems to be caused by an ingot alloy, i.e., production of α-Fe and difficulty in sintering, arises anymore and the manufacturing cost is never increased by the solution treatment. More specifically, the concentration of the rare-earth element can be within the range of 27 mass% to 35 mass% and the α-Fe phase to be included in the as-cast solidified alloy yet to be thermally treated can be reduced to 5 vol% or less. As a result, the solidified alloy no longer needs to be thermally treated unlike the conventional ingot alloy.\n\n[0047]Furthermore, in a preferred embodiment of the present invention, even if the powder has a relatively large mean particle size, the respective powder particles become polycrystalline much less often than the alloy powder prepared by a normal rapid cooling process, and achieves high magnetic anisotropy, thus making the resultant sintered magnet magnetizable very easily. By setting the mean particle size relatively large, the powder can exhibit increased flowability. In addition, the overall surface area of the powder particles decreases with respect to a unit mass, and therefore, the degree of activity of the superfine powder to an oxidation reaction decreases. As a result, the amount of the rare-earth elementto be wasted due to the oxidation decreases and the resultant magnet performance deteriorates much less easily.\n\nExamples\n\n[0048]Setting the composition shown in the following Table 1 as a target, solidified alloys to be rare-earth-iron-boron based magnet alloys were made by the three methods, namely, the method of the present invention (i.e., centrifugal casting process), a strip casting process and an ingot process. The alloys obtained by these three methods will be referred to herein as Alloy A, Alloy B and Alloy C, respectively. In an alloy to which the present invention is applied, Dy and Tb behave in substantially the same way. Thus, an example including Dy as an additive will be described. \n\nTable 1 \n\nNd Pr Dy B Co Al Cu Fe \n\n15.0 5.0 10.0 1.0 0.9 0.3 0.1 Bal \n\n      \n\n where \"Bal\" means the balance. The numerals in Table 1 indicate the respective mass percentages of the elements on the upper row to the overall alloy.\n\n[0049]In the centrifugal casting process of this example, the alloy was made by scattering a melt having the composition specified above (at about 1, 300 °C) with a centrifugal force toward the inner surfaces of a rotating cylindrical cooling member and cooling and solidifying the scattered melt on the inner surfaces of the cooling member. On the other hand, the strip-cast alloy was obtained by rapidly cooling and solidifying a melt having the composition specified above (at about 1,400 °C) through the contact with the outer surface of a water-cooled chill roller (made of copper) rotating at a peripheral velocity of 1 m/s. The resultant rapidly solidified alloy were cast flakes with a thickness of 0.2 mm. And the ingot-cast alloy was obtained by pouring a melt having the composition specified above (at about 1,450 °C) into a water-cooled iron die and gradually cooling it there. The resultant ingot cast alloy had a thickness of about 25 mm.\n\n[0050]In this example, Alloys A, B and C obtained by the methods described above were coarsely pulverized by a hydrogen decrepitation process and then finely pulverized with a jet mill.\n\n[0051]The hydrogen decrepitation process was carried out in the following manner. First, the material alloy was loaded into a hydrogen process furnace airtight. The furnace was evacuated and then filled with an H 2  gas at 0.3 MPa, thereby performing a pressuring process (i.e., hydrogen absorption process) for an hour. Thereafter, a vacuum was created again in the hydrogen process furnace and a heat treatment was carried out at 400 °C for three hours in that state, thereby performing a dehydrogenation process of removing excessive hydrogen from the alloy.\n\n[0052]In pulverizing the alloy with a jet mill, an N 2  gas at 0.6 MPa was used as a pulverizing gas, which had an oxygen concentration of 0.1 vol%.\n\n[0053]It should be noted that when the decrepitated alloys were fed into the jet mill, the feeding rates of the alloys were adjusted, thereby making fine powders with two different particle size distributions out of each of Alloys A, B and C.\n\n[0054]The various fine powders obtained in this manner were compressed and compacted under an aligning magnetic field to make compacts. The compaction process was carried out under the following set of conditions on each of the three alloys: \n\n Aligning magnetic field strength: 1.0 MA/m; Pressure on powder: 98 MPa; and Direction of aligning magnetic field: perpendicular to the direction in which the pressure was applied. \n\n[0055]The compacts obtained in this manner were sintered at various temperatures, thereby making sintered bodies. After having been subjected to an aging treatment (at 520 °C for an hour), each sintered body (or sintered magnet) had its composition analyzed. The results of the analysis are shown in the following Table 2 (where the \"pulverized particle size\" on the leftmost column is an FSSS mean particle size): \n\nTable 2 \n\nNdPrDyFeCoAlCuBO\n\nAlloy A (this invention)15.14.959.9566.50.910.250.101.000.03\n\n3.1 µmFine14.94.9010.0666.80.910.260.101.000.30\n\nSintered14.94.9010.0666.90.920.250.101.000.32\n\n3.6 µmFine15.04.9210.0866.80.920.240.111.010.28\n\nSintered14.94.9110.0966.80.920.240.101.000.29\n\nAlloy B (SC)15.24.989.9866.30.890.240.090.990.03\n\n2.8 µmFine14.64.869.9267.00.900.250.101.000.31\n\nSintered14.74.889.9166.90.900.240.091.000.32\n\n3.4 µmFine14.74.899.9466.80.890.240.090.990.29\n\nSintered14.74.899.9466.90.900.240.091.000.30\n\nAlloy C (ingot)15.14.999.9366.40.920.250.101.000.03\n\n3.2 µmFine14.54.839.9566.90.930.240.101.000.29\n\nSintered14.54.859.9567.00.930.250.101.000.30\n\n3.6 µmFine14.64.859.9766.80.920.250.091.000.27\n\nSintered14.64.869.9666.80.930.250.101.000.29\n\n                    \n\n[0056]The numerals in Table 2 represent multiple compositions, each consisting of their associated elements (in mass percentages). More specifically, Table 2 shows the compositions of the material alloy, fine powder and sintered body for each of two powders with different particle sizes that were made from Alloy A, B or C. By checking out the compositions at these stages, the variation in composition before and after the pulverization process can be understood.\n\n[0057]As can be seen from Table 2, Alloy A of the present invention has a higher Nd concentration and a higher Dy concentration in the fine powder than any other alloy B or C. This means that Nd and Dy included in the alloy are not lost easily during the hydrogen decrepitation process or the fine pulverization process with the jet mill.\n\n[0058]The reason is believed to be as follows. In the conventional strip-cast alloy (i.e., Alloy B) and ingot cast alloy (i.e., Alloy C), a light rare-earth element such as Nd is present on the grain boundary at a higher concentration than that defined by the stoichiometry of R 2 Fe 14 B type crystals and in the main-phase crystal grains at the concentration defined by the stoichiometry of R 2 Fe 14 B type crystals. On the other hand, a heavy rare-earth element such as Dy is broadly distributed in the grain boundary and main phases in Alloy B, in particular. Also, the hydrogen decrepitation process makes the alloy easily splitting by swelling the grain boundary portions with a high rare-earth element concentration. Accordingly, the superfine powder (with particle sizes of 0.5 µm or less) produced by the hydrogen decrepitation and fine pulverization processes comes from the grain boundary and includes a lot of Nd and Dy. Thus, in this example, such a superfine powder is removed while the powder is being collected with ajet mill. As a result, Nd and Dy are lost easily.\n\n[0059]In contrast, when Alloy A is used, the rare-earth-rich phases are dispersed in the main-phase crystal grains with relatively large particle sizes, and therefore, fewer grain boundary phases (i.e., R-rich phases) are present between the columnar crystals. Furthermore, the heavy rare-earth element is hardly present on the grain boundary but is concentrated in the main phase. In view of these considerations, Alloy A has a very small amount of superfine powder and the percentage of Nd and Dy to be lost with the superfine powder decreases significantly during the hydrogen decrepitation process and the fine pulverization process with the jet mill.\n\n[0060]Next, the magnetic properties of sintered magnets, made from the powders of Alloys A, B and C, are shown in the following Table 3: \n\nTable 3 \n\nAlloyPulverized Particle Size (µm)Sintering Temperature (°C)Density (Mg/m 3Br (T)HcB (kA/m)HcJ (kA/m)(BH) max  (kJ/m 3\n\nA13.110407.41.178952300261\n\nA23.110507.51.189032370266\n\nA33.110607.61.209182340275\n\nA43.610407.21.1588821102', '技术领域 \n\n [0001] 稀土铁硼系合金,烧结磁铁及其制造方法技术领域本发明涉及稀土铁硼系合金,烧结磁铁及其制造方法。 \n\n  背景技术 \n\n [0002] 稀土-铁-硼基稀土磁体(在本文中有时称为“ R-Fe-B基磁体”)是非典型高性能永磁体,其结构包括主相 R 3 Fe 14 B型结晶相是三元四方化合物,具有优异的磁铁性能。 在R 2 Fe 14 B中,R是选自由稀土元素和钇组成的组中的至少一种元素,并且Fe和B的一部分可以被其他元素代替。 \n\n [0003] 这样的基于R-Fe-B的磁体可大致分为烧结磁体和粘结磁体。 通过用压机将R-Fe-B基磁体合金的细粉(平均粒径为几微米)压实,然后烧结所得的压块,来制造烧结磁体。 另一方面,粘结磁铁通常是通过在压制机内将R-Fe-B系磁铁合金的粉末(粒径约100μm)与粘合剂树脂的混合物压制而成的。 \n\n [0004] 通过将R-Fe-B基磁体合金粉碎来制备用于生产这种R-Fe-B基磁体的粉末。 在现有技术中,这种R-Fe-B基磁体合金已经通过使用压铸技术的铸锭工艺或通过带冷轧辊快速冷却熔融合金的带材铸造工艺来制造。 \n\n [0005] 在通过铸锭法制备的合金中,在熔融物逐渐冷却的同时结晶的Fe初晶以α-Fe的形式保留在组织中,因此显着降低了粉碎效率或所得磁体的矫顽力。 为了克服该问题,必须进行固溶处理以从通过铸锭法获得的合金中去除Fe。 固溶处理是要在超过1000℃的高温下长时间进行的热处理,这会降低生产率并增加制造成本。 另外,在铸锭法中烧结合金粉末的处理步骤中,到处都存在局部为液相的低熔点相。 因此,除非将烧结温度设置得高并且除非将烧结时间设置得长,否则不能获得足够的烧结密度。 结果,在烧结过程中主相晶粒过度生长,因此难以获得具有高矫顽力的烧结磁体。 \n\n [0006] 相反,在通过薄带连铸法制备的合金中,例如,通过冷却辊将熔融合金快速冷却并固化。 因此,所得结构可以具有期望的小晶粒尺寸。 结果,可以获得快速凝固的合金,其中在烧结过程中成为液相的低熔点晶界相均匀且精细地分布。 如果这些晶界相在合金中均匀且细密地分布,则在通过将合金粉碎而获得的粉末颗粒中,主晶界相和晶界相极有可能彼此接触。 因此,在烧结过程中晶界相顺利地变成液相,从而快速地推进了烧结过程。 因此,可以降低烧结温度,可以缩短烧结时间,并且可以在最小化晶粒的过度生长的情况下获得具有高矫顽力的烧结磁体。 另外,在薄带连铸工艺中,在快速凝固的合金中几乎没有α-Fe结晶,因此,不再需要进行固溶处理。 \n\n [0007] 然而,在带铸合金中,组织是如此精细,以致难以将各个粉末颗粒精细地粉碎成单晶粒。 如果粉末颗粒是多晶的,则磁各向异性的程度低。 在那种情况下,即使粉末颗粒在磁场下取向,压缩和压实,也不能生产期望的烧结磁体,在该磁体中主相已经取向成达到高剩磁的程度。 \n\n [0008] 同时,为了增加R-Fe-B基烧结磁体的耐热性并且即使在高温下也保持它们的矫顽力足够高,经常将Dy添加到材料合金中。  Dy是稀土元素,具有增加作为R-Fe-B系烧结磁体的主要相的R 2 Fe 14 B相的磁各向异性的作用。 然而,Dy是其供应非常有限的元素。 因此,例如,如果电动汽车在不久的将来如此流行,以致对用于电动汽车的电动机中的难熔磁体产生越来越高的需求,那么Dy的资源将濒临耗尽。 人们将对材料成本的急剧上升深感忧虑。 考虑到这种潜在情况,必须尽快开发出用于减少要添加到高矫顽力磁体中的Dy量的技术。 然而,在带铸合金中,即使向其中添加诸如Dy之类的重稀土元素以提高矫顽力,例如,那些重稀土元素也将分布在晶界相中,并且晶界的浓度也降低。 主相中的重稀土元素会减少,这也是一个问题。 除非Dy-A-07-122413,EP-A2-994493或JP-A-08-013078中所公开的那样,否则诸如Dy之类的重稀土元素就不会有助于改善磁体性能。 如果熔融合金的快速冷却速率足够低,则Dy倾向于被吸收并沉淀在主相中。 但是,如果如带钢铸造法那样冷却速度较高,则在熔融合金凝固的同时,Dy将没有足够的时间从晶界部分扩散到主相中。 为了避免这些问题,可以采用通过降低熔融合金的冷却速度在主相中冷凝Dy的方法。 但是,如果以降低的速度冷却熔融合金,则晶粒会太大地增加其尺寸,并且应该如对于铸锭合金已经描述的那样产生α-Fe。 \n\n [0009] 为了克服上述问题,本发明的目的是提供一种稀土-铁-硼基合金粉末,其中,诸如Dy的重稀土元素以较高的浓度存在于主体中。 这种合金粉末的制备方法比其在晶界相中要容易进行烧结。 \n\n [0010] 本发明的另一个目的是提供用于粉末的材料合金,由该粉末制成的烧结磁体及其制造方法。 \n\n  发明内容 \n\n [0011] 根据本发明,根据权利要求1的稀土-铁-硼基磁体合金包括多个R 2 Fe 14 B型晶体(其中R为选自以下组中的至少一种元素)作为主相。 由稀土元素和钇组成),富稀土相分散在其中。 主相以比晶界相高的浓度包含Dy和/或Tb。 \n\n [0012] 合金包含2.5质量%至15质量%的Dy和/或Tb。 \n\n [0013] Dy和/或Tb与主相的比率至少是Dy和/或Tb与整个合金的比率的1.03倍。 \n\n [0014] 在优选的实施方式中,合金包含至多5体积%的α-Fe相。 \n\n [0015] 合金包括27 \n\n [0016] 该合金包含27质量%至35质量%的稀土元素。 \n\n [0017] 本发明的稀土-铁-硼基磁铁合金粉末是通过将上述任何一种合金粉碎而获得的。 \n\n [0018] 根据本发明的烧结磁体由上述稀土-铁-硼基磁体合金粉末制成。 \n\n [0019] 7.根据权利要求6所述的稀土-铁-硼系磁铁合金的制造方法,其特征在于,包括以下步骤:制备稀土-铁-硼系合金的熔体;以及使所述铁-硼-硼系磁铁合金熔融。 然后通过将熔体淬火来制造凝固的合金。 制备固化合金的步骤包括形成固化合金层的步骤,该固化合金层包括多个R 2 Fe 14 B型晶体(其中R为选自由以下组成的组中的至少一种元素作为主相)作为主相。 稀土元素和钇),其中富稀土相通过与冷却部件接触而使熔体淬火而分散。 主相以比晶界相高的浓度包含Dy和/或Tb。 \n\n [0020] 合金包含2.5质量%至15质量%的Dy和/或Tb。 \n\n [0021] Dy和/或Tb与主相的比率至少是Dy和/或Tb与整个合金的比率的1.03倍。 \n\n [0022] 形成固化合金层的步骤包括形成与冷却构件接触的第一纹理层,然后将熔体进一步进料到第一纹理层上以在第一纹理层上生长R 2 Fe 14 B型晶体,从而形成 在其上的第二纹理层。 \n\n [0023] 在形成第一纹理层时,将熔体以10℃/ s至1,000℃/ s的速率和100℃至300℃的过冷温度淬火。 在形成第二纹理层时,将熔体以1℃/ s至500℃/ s的速率淬火。 形成第二织构层时熔融合金的冷却速率低于形成第一织构层时熔融合金的冷却速率。 \n\n [0024] 在另一个优选的实施方案中,R 2 Fe 14 B型晶体具有至少20μm的平均短轴尺寸和至少100μm的平均长轴尺寸。 \n\n [0025] 在另一个优选的实施方案中,富稀土相以10μm或更小的平均间隔分散在R 2 Fe 14 B型晶体中。 \n\n [0026] 凝固的合金包含至多5体积%的α-Fe相。 \n\n [0027] 固化合金中包含的稀土元素的浓度为27质量%至35质量%。 \n\n [0028] 在优选的实施方式中,凝固合金层通过离心铸造法形成。 \n\n [0029] 根据本发明的制造用于烧结磁体的磁体粉末的方法包括以下步骤:通过上述任何方法制备稀土-铁-硼基磁体合金; 并粉碎合金。 \n\n [0030] 根据本发明的烧结磁体的制造方法包括以下步骤:制备上述稀土-铁-硼基磁体合金粉末; 在取向磁场下将粉末压缩以致密实; 并烧结成型体。 \n\n  附图说明 \n\n [0031]  无花果 1(a)至1(d)  图1是示意性地示出用于制造根据本发明的磁体粉末的稀土-铁-硼基磁体合金如何形成其结构的截面图。  无花果 2(a)至2(c)  图3是示意性地示出通过带铸法形成稀土铁硼系磁铁合金的组织的截面图。  无花果 3(a)至3(d)  图3是示意性地示出通过传统的铸锭工艺如何形成稀土-铁-硼基磁体合金的结构的截面图。  图。  4  图5是表示本发明的具体例和比较例的烧结磁铁的磁化特性的曲线图,其中,横轴表示施加于烧结磁铁的磁化强度,纵轴表示磁化率。  图。  5  图1是根据本发明的稀土-铁-硼基磁体合金的极化显微照片,其显示了在其与冷却构件接触的表面附近的织构横截面。  图。  6  图3是本发明的稀土-铁-硼系磁铁合金的极化显微镜照片,其示出了厚度方向上的中央部的组织截面。 \n\n  实施本发明的最佳模式 \n\n [0032] 本发明人估计了具有各种纹理和结构的稀土-铁-硼基磁体合金中Dy的浓度分布。 结果,我们发现,在具有结构的稀土-铁-硼基磁体合金中,Dy在主相(即R 2 Fe 14 B型晶体)中的浓度高于晶界相中的浓度。 如所示  图。  1(d) \n\n [0033]  图。  1(d)  示意性地示出了根据本发明的稀土-铁-硼基磁体合金的结构。 这种合金的结构中,稀土相非常小(在图中以黑点表​​示)  图。  1(d) )分散在相对粗糙的柱状晶体中。 可以通过使稀土-铁-硼基合金的熔融物通过与冷却构件接触而冷却并固化来形成这样的合金,该合金包括其中分散有富稀土相的多个柱状晶体。 合金的成分以R1 x1 R2 x2 T 100-x1-n2-yz Q y M z为特征(质量百分比),其中R1是选自稀土元素(R2除外)中的至少一种元素 )和钇,T是Fe和/或Co,Q是选自由B(硼)和C(碳)组成的组中的至少一种元素,R 2是选自由Dy和Tb组成的组中的至少一种元素,  M是选自Al,Ti,V,Cr,Mn,Ni,Cu,Zn,Ga,Zr,Nb,Mo,In,Sn,Hf,Ta,W和Pb的至少一种元素,并且M是 B的一部分可以用N,Si,P和/或S代替,然后27≤x1 + x2 + x2≤35,0. 95≤y≤1.05,2.5≤x2≤15和0.1≤z≤2(其中x,  y和z表示质量百分比)。 \n\n [0034] 在下文中,将参考附图详细描述制造合金的优选方法。  无花果 1(a)至1(d) 。 \n\n [0035] 首先,如图所示  图。  1(a) 然后,使熔融合金L与冷却构件(例如,铜冷却板或冷却辊)接触,从而在其侧面上形成包括非常小的初级晶体(R 2 Fe 14 B的初晶)的薄的第一织构层。 与冷却部件接触。 在形成第一纹理层之后或在形成第一纹理层时,将熔融合金L进一步进料到第一纹理层上,从而在第一纹理上生长柱状晶体(即,R 2 Fe 14 B型晶体)。 层(请参见  图。  1(b) )。 这些柱状晶体通过连续地供给熔融合金但以比初始合金低的冷却速率冷却熔融合金而形成。 结果,如图所示  图。  1(c) ,在供给相对缓慢的熔融合金中所包含的稀土元素扩散并到达其下方的粗大柱状晶体的晶界之前,凝固就进行了,从而使富稀土相分散的柱状晶体迅速生长。  。 通过在凝固过程的初期形成初级晶体时将冷却速率设定得较高,并在随后的晶体生长过程中减慢冷却速率,可以在第二晶体层中获得包括过大柱状晶体的第二织构层。 如图所示结束  图。  1(d) 。 \n\n [0036] 第二纹理层在刚刚固化的高温第一纹理层上冷却。 因此,仅通过控制熔体的进料速度,就可以将第二纹理层的冷却速率设置为低于第一纹理层的冷却速率,而无需使用任何特殊手段。 \n\n [0037] 在将第一纹理层形成为非常小的初级晶体的聚集体时,将熔融合金以10℃/ s至1,000℃/ s的速率和100℃至300℃的过冷温度进行冷却。 过冷可以最小化Fe初生晶体的成核。 另一方面,在形成第二织构层时,熔融合金以1℃/ s至500℃/ s的速度被冷却,同时被连续地进料。 \n\n [0038] 根据将熔体进料到冷却构件上的速率来调节冷却速率。 因此,为了获得上述结构,重要的是采用允许调节熔体进料速率的冷却方法。 更具体地,为了获得本发明的结构,优选将熔体一点一点恒定地恒定地供给到冷却构件(例如铸模)上。 因此,优选进行使熔滴分散或雾化的冷却过程。 例如,可以采用通过向其喷射气体而使熔体流雾化的方法或通过离心力使液滴散射的方法。 \n\n [0039] 本发明的熔体淬火方法的另一点是以高的产率将所产生的熔滴收集在冷却构件上(即,足够有效地使用熔滴以制备凝固的合金)。 为了提高产量,可以使用将熔滴通过气体喷雾吹到平板冷却构件或水冷模具上的方法,或者将熔滴分散在旋转的圆筒形鼓状冷却构件的内壁上的方法( 即,优选采用离心铸造法。 或者,也可以采用通过旋转电极法产生熔滴并将其沉积在冷却构件上的方法。 无论如何,关键是在与冷却构件接触的区域中产生晶核,并在其上相对缓慢地供给熔融合金。 以这种方式,可以在冷却过程中要散发的热量与熔体进料速率之间形成适当的平衡,从而形成上述特殊结构。 \n\n [0040] 根据上述的冷却过程,可以生长平均短轴尺寸为20μm以上且平均长轴尺寸为100μm以上的大的柱状晶体。 分散在柱状晶体中的富稀土相的平均间隔优选为10μm或更小。 \n\n [0041] 通过任何常规方法,例如带铸法或合金铸锭法,都无法获得具有这种质地和结构的凝固合金。 在下文中,将描述晶体通过常规方法如何在凝固合金中生长为稀土-铁-硼磁体合金(在本文中将其简称为“凝固合金”)。 \n\n [0042] 首先,将参考  无花果 2(a)至2(c)  带材铸造过程中晶体的生长方式。 带钢铸造过程导致较高的冷却速度。 因此,已经与高速旋转的冷却构件例如冷却辊的外表面接触的熔融合金L从其接触表面迅速冷却并固化。 为了实现高冷却速度,需要减少熔融合金L的量。 另外,考虑带钢连铸机的机理,不能顺序地供应熔融合金。 因此,在整个淬火过程中,冷却构件上的熔融合金L的厚度不会增加,而是基本保持恒定。 在这样的恒定厚度的熔融合金L中,从与冷却部件接触的表面开始晶体生长迅速地进行。 如图所示,由于冷却速度高,因此柱状晶体的短轴尺寸较小。  无花果 2(a)至2(c) ,并且所得的凝固合金具有精细的组织。 富稀土相不存在于柱状组织内部,而是分散在晶界上。 在带铸合金中,晶粒具有如此小的尺寸,使得具有取向的晶体取向的区域很小。 因此,各个粉末颗粒的磁各向异性减小。 \n\n [0043] 接下来,将参考以下内容进行描述。  无花果 3(a)至3(d)  常规晶锭工艺中晶体如何生长。 铸锭工艺导致相对较低的冷却速率。 因此,已经与冷却构件接触的熔融合金L从该接触表面缓慢地冷却并固化。 在仍然熔融的合金L的内部,首先,在与冷却部件接触的表面上生成Fe初晶,然后Fe的树枝状晶体将生长,如图1所示。  无花果 3(b)和3(c) 。  R 2 Fe 14 B型结晶相最终通过包晶反应形成,但仍包含一些会破坏磁体性能的α-Fe相。 凝固的合金具有粗糙的结构,并且包含大于5 vol%的大α-Fe相。 为了减少α-Fe,需要进行均质化处理。 具体地,通过尽可能多地扩散和消除晶锭合金中的α-Fe和R 2 Fe 17相,应当使所得结构基本上仅由R 2 Fe 14 B相和富R相组成。 均质化热处理在惰性气氛(氮气氛除外)或真空中于1100〜1200℃的温度下进行1〜48小时。 这种均质化处理不利地增加了制造成本。 同时,为了最小化α-Fe的产生,材料合金中包括的稀土元素的摩尔分数需要足够大于化学计量所限定的摩尔分数。 然而,如果增加稀土元素的摩尔分数,则所得磁体的剩磁将降低并且其耐腐蚀性将劣化,这是问题。 \n\n [0044] 另一方面,用于本发明的稀土-铁-硼基磁体合金(参见  图。  1个 )以接近化学计量所定义的摩尔分数的方式包含稀土元素,但是不太可能产生α-Fe,这是有利的。 因此,与传统方法相比,可以减少稀土含量。 另外,用于本发明的合金具有包括分散有富稀土相的柱状晶体的金相组织。 因此,当将合金粉碎成粉末颗粒时,容易在粉末颗粒的表面上出现容易变成液相的富稀土相。 结果,在比常规方法更低的温度和更短的时间内实现了足够程度的烧结,并且可以最小化烧结过程中的过度晶粒生长。 另外,由于富含稀土的相细微地分散在柱状晶体中,因此,由于粉碎工序中的超细粉末而使失去稀土的相的可能性也降低。 \n\n [0045] 此外,在本发明中使用的合金中,添加的Dy和Tb可能如上所述集中在主相中而不是在晶界上。 这是因为熔融合金的冷却速率低于带钢铸造工艺的冷却速率,并且Dy和Tb更容易引入主相。 因此,在本发明中,即使将稀有自然资源之一的Dy或Tb的浓度规定为2.5质量%〜15质量%的范围,通过该添加而获得的效果也与通过添加得到的效果相当。 在常规的带铸合金中将Dy或Tb的浓度设定为3.0质量%至16质量%的情况。 \n\n [0046] 如上所述,通过使用由图1所示的方法制成的合金  图。  1个 因此,可以更有效地烧结粉末,可以更有效地利用Dy等稀有自然资源,并且可以以低成本提供具有优异矫顽力的烧结磁体。 此外,不再出现由铸锭合金引起的问题,即α-Fe的生产和烧结困难,并且固溶处理决不会增加制造成本。 更具体地,稀土元素的浓度可以在27质量%至35质量%的范围内,并且待热处理的铸态凝固合金中包括的α-Fe相可以减小至5。  vol%或更少。 结果,与常规的锭合金不同,不再需要对固化的合金进行热处理。 \n\n [0047] 此外,在本发明的优选实施方式中,即使粉末具有相对较大的平均粒径,与通过常规快速冷却方法制备的合金粉末相比,各个粉末颗粒变得多晶的频率也少得多,并且实现了高的磁各向异性。 因此,使所得的烧结磁铁非常容易磁化。 通过将平均粒径设定得较大,粉末可以显示出增加的流动性。 另外,粉末颗粒的总表面积相对于单位质量减小,因此,超细粉末对氧化反应的活性程度降低。 结果,由于氧化而浪费的稀土元素的量减少,并且所得的磁体性能不容易劣化。 \n\n  例子 \n\n [0048] 将以下表1所示的组成作为目标,通过本发明的方法(离心铸造法)这三种方法,制成稀土-铁-硼基磁体合金的凝固合金, 带钢铸造工艺和铸锭工艺。 通过这三种方法获得的合金在本文中分别称为合金A,合金B和合金C。 在应用了本发明的合金中,Dy和Tb的行为基本相同。 因此,将描述包括Dy作为添加剂的示例。 \n\n  表格1 \n\n \n\n \n\n     钕 Pr  镝 B  有限公司 Al Cu  铁  15.0 5.0 10.0 1.0 0.9 0.3 0.1  巴尔   \n\n  其中“ Bal”表示余额。 表1中的数字表示上排元素相对于整个合金的各自的质量百分比。 \n\n [0049] 在该实例的离心铸造工艺中,通过将具有上述指定成分的熔体(在大约1,300°C下)以离心力向旋转的圆筒形冷却部件的内表面散布并冷却并固化该合金来制造合金。 散在冷却部件内表面上的熔体。 另一方面,通过与水冷激冷辊(铜制)的外表面接触,将具有上述组成的熔体快速冷却并固化(在约1400℃下),从而得到带状铸造合金。 以1 m / s的圆周速度旋转。 所得的快速凝固的合金为厚度为0.2mm的铸造薄片。 然后将具有上述组成的熔体(在约1,450℃下)倒入水冷的铁模中并在那里逐渐冷却,从而获得铸锭合金。 所得的铸锭合金的厚度为约25mm。 \n\n [0050] 在该实施例中,将通过上述方法获得的合金A,B和C通过氢破碎工艺粗粉碎,然后用喷射式粉碎机细粉碎。 \n\n [0051] 氢脱氢处理以以下方式进行。 首先,将材料合金气密地装入氢气处理炉中。 抽空炉子,然后用0.3MPa的H 2气填充,由此进行一个小时的加压过程(即,氢吸收过程)。 之后,再次在氢处理炉中产生真空,并在该状态下在400℃下进行三小时的热处理,从而进行从合金中去除过量氢的脱氢处理。 \n\n [0052] 在用喷射式粉碎机粉碎合金时,使用0.6MPa的N 2气体作为氧气浓度为0.1体积%的粉碎气体。 \n\n [0053] 应该注意的是,当将分解后的合金送入气流粉碎机时,调节合金的送料速度,从而从合金A,B和C中分别制得具有两种不同粒径分布的细粉。 \n\n [0054] 将以这种方式获得的各种细粉在取向磁场下压缩并压实以制成压块。 压实过程是在以下一组条件下对三种合金中的每一种进行的: \n\n  对准磁场强度:1.0 MA / m; 粉末压力:98 MPa; 磁场对准方向:垂直于施加压力的方向。 \n\n [0055] 以这种方式获得的成型体在各种温度下烧结,从而制成烧结体。 在进行了时效处理(在520℃下一个小时)之后,对每个烧结体(或烧结磁体)进行了组成分析。 分析结果显示在下表2中(其中最左列的“粉化粒度”是FSSS平均粒度): \n\n  表2 \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n     钕Pr 镝 铁 有限公司AlCuBO  合金A(本发明)15.14.959.9566.50.910.250.101.000.03  3.1微米 精细14.94.9010.0666.80.910.260.101.000.30  烧结的14.94.9010.0666.90.920.250.101.000.32  3.6微米 精细15.04.9210.0866.80.920.240.111.010.28  烧结的14.94.9110.0966.80.920.240.101.000.29  合金B(SC)15.24.989.9866.30.890.240.090.990.03  2.8微米 精细14.64.869.9267.00.900.250.101.000.31  烧结的14.74.889.9166.90.900.240.091.000.32  3.4微米 精细14.74.899.9466.80.890.240.090.990.29  烧结的14.74.899.9466.90.900.240.091.000.30  合金C(锭)15.14.999.9366.40.920.250.101.000.03  3.2微米 精细14.54.839.9566.90.930.240.101.000.29  烧结的14.54.859.9567.00.930.250.101.000.30  3.6微米 精细14.64.859.9766.80.920.250.091.000.27  烧结的14.64.869.9666.80.930.250.101.000.29  \n\n [0056] 表2中的数字代表多种组成,每种组成均由其相关元素组成(以质量百分比计)。 更具体地,表2示出了由合金A,B或C制成的具有不同粒径的两种粉末中的每种的材料合金,细粉和烧结体的组成。通过检查在这些阶段的组成, 粉碎前后的成分可以理解。 \n\n [0057] 从表2可以看出,本发明的合金A在细粉中具有比其他任何合金B或C更高的Nd浓度和更高的Dy浓度。这意味着合金中所含的Nd和Dy不容易丢失。 在氢破碎工艺或用喷射磨进行精细粉碎的过程中。 \n\n [0058] 认为原因如下。 在传统的带铸合金(即合金B)和铸锭合金(即合金C)中,轻稀土元素(如Nd)以比化学计量比高的浓度存在于晶界。  R 2 Fe 14 B型晶体和主相晶粒中的浓度由R 2 Fe 14 B型晶体的化学计量确定。 另一方面,特别是Dy等重稀土类元素广泛地分布在合金B的晶界和主相中。 而且,氢爆破处理通过使稀土元素浓度高的晶界部分溶胀而使合金容易分裂。 因此,通过氢破碎和细粉碎过程产生的超细粉末(粒径为0.5μm或更小)来自晶界并且包含大量的Nd和Dy。 因此,在该实例中,在用喷射式磨机收集粉末的同时除去了这种超细粉末。 结果,Nd和Dy容易丢失。 \n\n [0059] 相反,当使用合金A时,富稀土相分散在具有相对较大粒径的主相晶粒中,因此在合金之间存在较少的晶界相(即富R相)。 柱状晶体。 此外,重稀土元素几乎不存在于晶界上,而是集中在主相中。 出于这些考虑,合金A具有非常少量的超细粉末,并且在氢破碎处理和喷射磨的精细粉碎过程中,超细粉末损失的Nd和Dy的百分比显着降低。 \n\n [0060] 接下来,由合金A,B和C的粉末制成的烧结磁体的磁性能示于下表3中: \n\n  表3 \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n     合金 粉碎后的粒径(μm) 烧结温度(℃)密度(Mg / m 3  溴(T) 六氯苯(kA / m) 立方英尺(kA / m)(BH)最大(kJ / m 3  A13.110407.41.178952300261 A23.110507.51.189032370266 A33.110607.61.209182340275 A43.610407.21.158882110255 A53.610607.51.199192290274 A63.610807.61.219352320283 B12.810407.51.158752240253 B22.810507.61.178902230262 B33.410407.51.128452180237 B43.410507.61.148602180245 C13.210607.31.148721970249 C23.210807.61.199111980271 C33.610707.21.138731820247 C43.610907.51.179031840264  \n\n [0061] 在表3中,A1至A6是由具有不同平均粒径或烧结温度的合金A的粉末制成的烧结磁体,B1至B4是由合金B的粉末制成的烧结磁体,而C1至C4是由烧结粉末制成的烧结磁体。 由合金C的粉末制成。 \n\n [0062] 从表3中可以看出,当用合金A制成烧结磁体时,与用合金C制成烧结磁体的情况相比,在较低的烧结温度下可以获得更高的密度和优异的磁性能。 合金A的粉末比合金C的粉末更容易烧结。 \n\n [0063] 同样,即使合金A的粉末的平均粒径大于合金B的平均粒径,由合金A的粉末制成的烧结磁体也比由合金B的粉末制成的烧结磁体具有更高的剩磁B r。 原因如下。 具体地,合金A的主相尺寸大于合金B的主相尺寸。因此,即使合金A的粉末粒径较大,这些粉末颗粒仍具有高的磁各向异性,并且烧结磁体的磁化度增加。 方向。 \n\n [0064] 评价了烧结磁体A6和B2的磁化特性。  图。  4  图2是示出磁化特性的图。 横坐标表示施加到烧结磁体的磁化场的强度,而纵坐标表示磁化百分比。 从中可以看出  图。  4 与烧结磁体B2相比,烧结磁体A6表现出改善的磁化特性。 认为这是因为合金A的主相尺寸比合金B大,并且组织均匀,并且可以更容易磁化。 \n\n [0065] 接下来,仅在主相上和在整个烧结磁体上计算出上述每个烧结磁体中包括的稀土元素的原子数比。 \n\n [0066] 烧结磁体A3,B1和C2的计算结果分别显示在下表4、5和6中: \n\n  表4 \n\n \n\n \n\n \n\n     钕Pr 镝  仅主相50.317.232.5  整体烧结磁铁51.617.431.0  \n\n  表5      钕Pr 镝  仅主相51.517.531.0  整体烧结磁铁51.617.630.9  \n\n  表6      钕Pr 镝  仅主相51.117.131.8  整体烧结磁铁51.417.531.1  \n\n  这些表中包括的数字表示Nd,Pr和Dy与包含在主相或整个烧结磁体中的全部稀土元素的原子序数比(在本文中有时简称为“比率”)。 \n\n [0067] 从这些表4、5和6中可以看出,在由合金A制成的烧结磁体中,主相中的Dy比率最高。如表4中所示,在整个烧结磁体中,Dy比率为31.0,但是 仅主相中的Dy比率为32.5,比31.0高出4%。 这意味着主相中的Dy浓度高于晶界相中的Dy浓度(即,Dy集中在主相中)。 从表5所示的合金B的结果中看不到这种现象。产生这种差异的原因如下。 具体地,当通过带坯连铸法制造合金B时,熔融合金以高的速度淬火,使得Dy不仅在主相中而且在晶界相中均在宽范围内均匀地分布。 相反,当制备合金A时,熔融合金以相对低的速率淬火。 结果,Dy扩散到主相中并可以在那里沉降。 \n\n [0068] 在本发明中,主相中的Dy和/或Tb的比率是整个合金或烧结磁体中的Dy和/或Tb的比率的至少1.03倍高。 为了通过更有效地使用Dy和/或Tb来提高矫顽力,主相中的Dy和/或Tb的比率更优选为合金或烧结磁铁整体中的Dy和/或Tb的比率的至少1.05倍。 \n\n [0069]  无花果 5和6  图2是本发明的稀土-铁-硼基磁体合金的极化显微照片,分别显示了其与冷却构件接触的表面附近的织构横截面和厚度方向上的中央部分的织构横截面。 在  无花果 5和6 ,上侧显示冷却表面,而下侧显示散热表面(即自由表面)。 从中可以看出  无花果 5和6 ,在距接触表面约100 µm处存在非常小的晶体纹理(即第一纹理层),而在内部区域(即第二纹理层)中存在的粗糙的柱状晶体大于或大于接触表面。 距离接触面100 µm。 另一方面,在自由表面附近,尽管在此和那里观察到非常小的纹理,但是该区域主要由粗晶体组成。 合金铸造薄片具有5mm至8mm的厚度,并且主要由基本上由粗柱状晶体组成的第二织构层组成。 应当注意,第一和第二纹理层之间的边界在某处是确定的,而在其他地方是不确定的。 \n\n [0070] 比较具有不同稀土含量的多个合金样品的结构,本发明人发现,所包含的稀土元素的浓度越高,合金的晶粒尺寸越小。 \n\n [0071] 当观察到粗晶粒的组成图像时,证实了富稀土相分散在此处。 凝固合金中包含的稀土元素的量越多,在粗晶粒中识别出的分散的富稀土相的数量越多。 没有观察到α-Fe相。 \n\n [0072] 在将这种合金粉碎成粉末颗粒时,优选将其FSSS平均粒径控制在3.0μm至5.0μm的范围内。 通过以这种方式粉碎合金以获得比常规合金更大的平均粒径,可以增加烧结磁体的剩磁B r,并且可以降低所含氧的浓度。 \n\n  工业适用性  \n\n [0073] 根据本发明,Dy和Tb以比快速凝固的合金大的尺寸集中在主相中,从而有效地提高了矫顽力。 另外,虽然所得的固化合金中包含的主相具有较大的尺寸,但是不产生α-Fe,并且可以充分地烧结粉末。 结果,可以显着降低烧结磁体的制造成本。');
INSERT INTO `os_patent_instruction_text` VALUES (12980, 22809, '【0001】明 細 書 希土類一鉄一硼素系磁石用合金粉末を用い 焼結磁石 技術分野\n\n【0002】本発明は、 希土類一鉄一硼素系合金および焼結磁石、 ならびに、 それらの製造方法に関する。 背景技術\n\n【0003】高性能永久磁石として代表的な希土類一鉄一硼素系の希土類磁石 (以下、 「R— F e— B系磁石」 と称する場合がある） は、 三元系 正方晶化合物である R2F e1 4B型結晶相を主相として含 組織を 有し、 優れた磁石特性を発揮する。 ここで、 Rは希土類元素および イツ卜リウムからなる群から選択された少なくとも\" 1種の元素であ り、 F eゆ Bの一部は他の元素によって置換されていても良い。 このような R— F e— B系磁石は、 焼結磁石とボンド磁石に大別 される。 焼結磁石は、 R— F e— B系磁石用合金の微粉末 （平均粒 径：数 m ) をプレス装置で圧縮成形した後、 焼結することによつ て製造される。 これに対して、 ポンド磁石は、 通常、 R— F e— B 系磁石用合金の粉末 （粒径：例えば 1 0 0 171程度） と結合樹脂と の混合物をプレス装置内で圧縮成形することによって製造される。 このような R— F e— B系磁石の製造に用いられる粉末は、 R— F e— B系磁石用合金を粉砕することによって作製される。 従来、 このよろな R— F e— B系磁石用合金は、 金型鎵造によるインゴッ\n\n卜法や、 冷却ロールを用いて合金溶湯を急冷するス卜リップキャス 卜法を用いて作製されてきた。\n\n【0004】インゴッ卜法による合金では、 溶湯の徐泠中に析出し 初晶 F Θ がび一 F eとして組織内に残存するため、 粉砕効率を著しく低下さ せたり、 最終的に得られる磁石の保磁力を低下させるという問題が ある。 この問題を解決するため、 インゴッ卜法によって得た合金中 から F eを消失させる めの溶体化処理が不可欠であっ 。 溶体化 処理は、 1 0 0 0 °Cを超える高温で長時間行う熱処理であり、 生産 性を低下させ、 製造コス卜上昇を招いてい 。 また、 インゴッ卜法 による合金の粉末を焼結する過程においては、 液相となるべき低融 点相が局在するため、 焼結温度を高く、 また焼結時間を長く設定し ないと、 充分な焼結密度が得られなかっ 。 この結果、 主相の結晶 粒が焼結工程中に粗大に成長してしまし、、 保磁力の高い焼結磁石を 得ることが困難であった。\n\n【0005】これに^し、 ス卜リップキャスト法による合金では、 合金溶湯を 冷却ロールなどによって急冷し、 凝固させるため、 結晶組織が微細 化される。 そのため、 焼結工程で液相となるべき低融点の粒界相が 均一かつ微細に分巿した急冷合金が得られる。 合金中において粒界 相が均一かつ微細に分布していると、 合金の粉砕によって得られる 粉末粒子において、 主相と粒界相とが接触している確率が高く、 粒 界相が焼結工程が液相化して焼結プロセスを速やかに進行させる。 この め、 焼結温度を低く抑え り、 焼結時間を短縮することがで き、 結晶粒の粗大化を抑えて高い保磁力を示す焼結磁石を得ること\n\nが可能になる。 また、 ス卜リップキャス卜法によれば、 急冷合金中 に 一 F eがほとんど析出しないため、 溶体化処理が不要になる利 点ちある。\n\n【0006】しかしながら、 ストリップキャス卜合金の場合、 結晶組織が極め て微細であるだめ、 各粉末粒子が単結晶粒となるまで微粉砕するこ とが困難である。 粉末粒子が多結晶であると、 磁気的異方性が小さ くなり、 磁界中で粉末配向♦圧縮成形を行ったとしても、 主相の配 向度が高ぐ、 残留磁化の大きな焼結磁石を作製することができなぐ なる。\n\n【0007】一方、 R— F e _ B系焼結磁石の耐熱性を向上させ、 高温下にお いても保磁力を高く維持するため、 従来から D yが原料合金に添加 されてきた。 D yは、 R— F e— B系焼結磁石の主相である R2F Θ i4B相の異方性磁界を高める効果を示す希土類元素の一種であ る。 D yは稀少元素である め、 今後、 電気自動車の実用化が進展 し、 電気自動車用モータ一などに用いられる高耐熱磁石の需要が拡 大してゆくと、 D y資源が逼迫する結果、 原料コス卜の増加が懸念 される。 この め、 高保磁力磁石における D y使用量削減技術の開 発が強く求められている。 しかし、 ストリップキャスト合金の場合 は、 保磁力向上などを意図して D yなどの重希土類元素を添加した としてち、 これらの重希土類元素が粒界相にも分布し、 主相中にお ける重希土類元素の濃度が低下するという問題がある。 D yなどの 重希土類元素は、 主相中に位置して初めて磁石特性の効果に寄与す ることができる。 D yは、 合金溶湯の急冷速度が充分に低い場合は,\n\n主相内に取り込まれ、 主相中に安定して存在する傾向があるが、 ス 卜リップキャス卜法のように冷却速度が相対的に速い場合は、 合金 溶湯の凝固に際して粒界部分から主相内へ拡散する時間的余裕が存 在しないからである。 この め、 合金溶湯の冷却速度を遅ぐし、 D yを主相中に濃縮する方法ち考えられるが、 合金溶湯を遅 【0008】本発明は、 上記事情に鑑みてなされたちのであり、 その目的とす るところは、 D yなどの重希土類元素が粒界相よりち主相に相対的 に高い濃度で存在し、 しかも、 焼結が容易な希土類一鉄一硼素系合 金の粉末、 およびその製造方法を提供することにある。\n\n【0009】本発明の他の目的は、 上記粉末の原料となる合金、 および上記粉 末から作製した焼結磁石、 ならびに、 それらの製造方法を提供する しとにあ ·©。 発明の開示\n\n【0010】本発明の希土類一鉄一硼素系磁石用合金は、 内部に希土類り ツチ相が分散した複数の R2F e1 4B型結晶 （Rは希土類元素 およびイッ トリウムからなる群から選択され 少なくとち 1 種 の元素） を主相として含み、 前記主相が粒界相に比べて高し、濃 度の D yおよび/または T bを含有してし、る。\n\n【0011】ある好ましい実施形態におし、ては、 D yおよび/または T bの含 有量が合金全体の 2. 5質量％以上 1 5質量％以下である。\n\nある好ましい実施形態において、 主相内における D yおよびノま たは T bの比率は、 合金全体における D yおよび まだは T bの比 率の 1 . 0 3倍以上の大きさを有している。\n\n【0012】ある好ましい実施形態において、 一 F e相の比率が 5体積％以 下である。\n\n【0013】ある好ましい実施形態において、 希土類元素の濃度が 2 7質量％ 以上 3 5質量％以下である。\n\n【0014】本発明の希土類一鉄一硼素系磁石用合金の粉末は、 上記いずれか の合金を粉砕することによって得られだものである。\n\n【0015】本発明の焼結磁石は、 上記の希土類一鉄一硼素系磁石用合金の粉 末から作製したちのである。\n\n【0016】本発明による希土類一鉄一硼素系磁石用合金の製造方法は、 希土 類一鉄一硼素系合金の溶湯を用意する工程と、 前記溶湯を)令却する ことによって凝固合金を作製する工程とを包含する希土類一鉄ー硼 素系磁石合金の製造方法であって、 前記凝固合金を作製する工程は 、 前記合金の溶湯を冷却部材を接触させることにより、 前記合金の 溶湯を冷却し、 内部に希土類りツチ相が分散した複数の R2F Θ1 4B型結晶 （Rは希土類元素およびイツ 卜リウムからなる群から選択 された少なくとも 1種の元素） を主相として含 凝固合金層であつ て、 前記主相が粒界相に比べて高い濃度の D yおよび/または T b を含有している凝固合金層を作製する工程を含んでいる。\n\n【0017】ある好ましい実施形態において、 D yおよび または T bの含有 量が合金全体の 2. 5質量％以上 1 5質量 ¾>以下である。\n\nある好ましい実施形態において、 主相内における D yおよび ま たは T bの比率は、 合金全体における D yおよび Zまたは T bの比 率の 1. 03倍以上の大きさを有している。\n\n【0018】ある好ましい実施形態において、 前記凝固合金層を形成する工程 は、 前記冷却部材に接触する側に第 1組織層を形成した後、 前記第 1組織層上に更に前記合金の溶湯を供給することにより、 前記 R2F e4B型結晶を前記第 1組織層上に成長させて第 2組織層を形 成することを含 ¾。\n\n【0019】ある好ましい実施形態において、 前記第 1組織層を形成する際の 合金溶湯の冷却は、 1 0°CZ秒以上 1 000°Cノ秒以下、 過冷却 1 〇〇°C以上 300°C以下の条件で行い、 前記第 2組織層を形成する 際の合金溶湯の冷却は、 1 °CZ秒以上 500°CZ秒以下の条件で行 。 前記第 2組織層を形成する際の合金溶湯の冷却速度は、 前記第 1組織層を形成する際の合金溶湯の冷却速度よりも遅い。\n\n【0020】ある好ましい実施形態において、 前記 R2F e14B型結晶の短軸 方向平均サイズは 20 以上、 長軸方向平均サイズは 1 OO m 以上である。\n\n【0021】ある好まし ( 実施形態において、 前記希土類リッチ相は、 前記 R2F e14B型結晶の内部において、 平均 1 0 m以下の間隔で分散 してし、る。\n\n【0022】前記凝固合金中に含まれる 一 F e相の比率は、 5体積％以下で ある。\n\n【0023】前記凝固合金中に含まれる希土類元素の濃度は、 27質量％»以上\n\n3 5質量 ¾>以下である。\n\n【0024】ある好ましし、実施形態において、 前記凝固合金層の形成は、 遠心 鎵造法によって行う。\n\n【0025】本発明による焼結磁石用磁石粉末の製造方法は、 上記し、ずれかの 方法で作製され 希土類一鉄一硼素系磁石用合金を用意する工程と、 前記合金を粉砕する工程とを包含する。\n\n【0026】本発明による焼結磁石の製造方法は、 前記希土類一鉄一硼素系 磁石合金の粉末を用意する工程と、 前記粉末を配向磁界中で圧縮 して成形体を作製する工程と、 前記成形体を焼結する工程とを包含 する。 図面の簡単な説明\n\n【0027】図 1 ( a ) 〜 （d ) は、 本発明の磁石粉末の製造に用いる希土類 一鉄一硼素系磁石用合金の金属組織が形成される過程を模式的に示 す断面図である。\n\n【0028】図 2 ( a ) ~ ( c ) は、 ストリップキャス卜法による希土類一鉄 一硼素系磁石用合金の金属組織が形成される過程を模式的に示す断 面図である。\n\n【0029】図 3 ( a ) 〜 （d ) は、 従来のインゴッ卜法による希土類一鉄一 硼素系磁石用合金の金属組織が形成される過程を模式的に示す断面 図である。\n\n【0030】図 4は、 本発明による焼結磁石の実施例および比較例について着 磁特性を示すグラフであり、 横軸が焼結磁石に印加した着磁磁界の\n\n強度であり、 縦軸が着磁率を示している。\n\n【0031】図 5は、 本発明による希土類一鉄一硼素系磁石用合金の偏光顕微 鏡写真であり、 冷却部材との接触面近傍の組織断面を示してし、る。 図 6は、 本発明による希土類一鉄一硼素系磁石用合金の偏光顕微 鏡写真であり、 厚さ方 ^中央部の組織断面を示している。 発明を実施する めの最良の形態 本発明者は、 種 の組織形態を有する希土類一鉄一硼素系磁石用 合金中における D yの濃度分布を評価し ところ、 図 1 (d) に示 すよ な金属組織を有する希土類一鉄一硼素系磁石用合金では、 粒 界相に比べて主相 （R2F e14B型結晶） 中に相対的に高い濃度で D yが存在することを見出した。\n\n【0032】図 1 (d) は、 本発明による希土類一鉄一硼素系磁石用合金の金 属組織を模式的に示している。 この合金は、 比較的大きな柱状結晶 の内部に微細な希土類リッチ相 （図中、 黒いドッ ト状領域として示 されている） が分散した構造を有している。 このような、 内部に希 土類リツチ相が分散した複数の柱状結晶を含 合金は、 希土類一鉄 —硼素系合金の溶湯を冷却部材に接触させ、 合金溶湯を冷却し、 凝 固させることよって形成することができる。 合金の組成は、 R2F e4B型結晶の化学量論比に対し、 R—「 i c h成分に対^する 過重な Rを含有し、 必要に麻じて種々の元素が添加されたものを使 用し得る。 例えば、 希土類一鉄一硼素系磁石用合金凝固合金の組成 を R 1x1R2x 2T1 0n-x i -x2-y-ZQ y M2(質量比） で表現した\n\n場合、 R1は、 下記の R 2を除く希土類元素およびイツ卜リウ厶か らなる群から選択され 少なくとも 1種の元素、 Tは F eおよび Z または Co、 Qは B (硼素） および C (炭素） からなる群から選択 され 少なくとも 1種の元素、 R 2は D yおよび T bからなる群か ら選択された少なくとも 1種の元素、 Mは、 Aし T i、 V、 C r , Mn、 N i、 Cu、 Zn、 Ga、 Z r、 Nb、 Mo、 l n、 Sn、 H f 、 Ta、 W、 および P bからなる群から選択された少なくとも 1種の元素である。 また、 Bの一部は N、 S i、 P、 および また は Sで置換してもよい。 x、 z、 および yは、 質量比率であるとす ると、 それぞれ、 2了≤x 1 +x 2≤35. 0. 95≤ y≤ 1. 0 5、 2. 5≤ X 2≤ 1 5, および 0. 1≤Z≤2を満足することが 好ましい。\n\n【0033】以下、 図 1 (a) から （d) を参照しながら、 上記合金の好まし い作製方法を詳細に説明する。\n\n【0034】まず、 図 1 (a) に示すように、 合金の溶湯 Lを)令却部材 （例え ば銅製の冶却板ゆ冷却ロール） に接触させることにより、 冷却部材 に接触する側に微細な初晶 （R2F e14B) を含 ¾第 1組織層を薄 く形成する。 この後、 あるいは第 1組織層を形成しつつ、 第 1組織 層上に更に上記合金の溶湯 Lを供給することにより、 第 1組織層上 柱状結晶 （R。 F e B □曰曰ノ を成長させる （図 1 (b))。 し の柱状結晶は、 溶湯の供給を継続しながら最初よりも冷却速度の低 い状況下で合金溶湯を冷却することによって行う。 その結果、 図 1 (c) に示すよろに、 比較的ゆっくりと供給される合金溶湯中の希\n\n土類元素が下方に位置する大きな柱状結晶の粒界に拡散しなし、 ち に凝固が進行し、 内部に希土類リツチ相が分散しだ柱状結晶が大き く成長することになる。 このように、 凝固初期において初晶を形成 するときは冷却速度を相対的に速くし、 その後の結晶成長に際して は冷却速度を遅 【0035】なお、 第 2組織層は、 凝固直後における高温の第 1組織層上で冷 却されるため、 特別な手段を用いないでも、 溶湯供給量を調節する だけで、 第 2組織層の冷却速度を第 1組織層の冷却速度よ《0ち遅ぐ することができる。\n\n【0036】微細な初晶の集合体である第 1組織層を形成する際の合金溶湯の 冷却は、 1 0 °〇/秒以上 1 0 0 0 °CZ秒以下、 過冷却 1 0 0 °C以上 3 0 0 °C以下の条件で行うことが好ましい。 過冷却により、 F e初 晶の析出を抑制できる。 一方、 第 2組織層を形成する際の合金溶湯 の冷却は、 溶湯を供給しつつ、 1 °CZ秒以上 5 0〇°CZ秒以下の条 件で行うことが好ましい。\n\n【0037】冷却速度は、 溶湯を冷却部材上に供給する速度によって調節され る め、 上述のょラな合金組織を得るには、 溶湯供給量の調節が可 能な冷却方法を採用することが重要である。 より詳細には、 本発明 の合金組織を得るには、 冷却部材 （錡型など） の上に溶湯を均一に 少衋づつ供給することが望ましい。 このため、 溶湯を液滴化して分 散 *噴霧する冷却方法を行うことが好ましい。 例えば、 溶湯流にガ スを噴き当てて嗔霧する方法ゆ、 遠心力によって液滴を飛散させる\n\n方法を採用することができる。\n\n【0038】本発明における溶湯冷却方法で重要な他の点は、 生成した溶湯の 液滴を冷却部材上において高い収率で回収する （凝固合金の形成に 効率よく用いる） ことにある。 収率を高めるには、 平板伏の冷却部 材ゅ水冷鐯型にガス噴霧で溶湯の液滴を吹き付ける方法ゆ、 回転す る円筒ドラム状の冷却部材の内壁に溶湯の液滴を飛散させる方法 (遠心鐯造法） を用いることが望ましい。 ま 、 回転電極法によつ て溶湯液滴を生成し、 冷却部材上に積もらせる方法を採甩すること ちできる。 重要な点は、 冷却部材と接触する流域に結晶核を形成し た後、 その上に、 比較的ゆっくりと溶融した合金を供給する点にあ る。 こうして、 冷却時の抜熱量と溶湯供給量とをバランスさせて上 記の特殊な金属組織を実現することが可能になる。\n\n【0039】上述の冷却方法により、 短軸方向平均サイズが 2 0 m以上、 長 軸方向平均サイズが 1 0 0 m以上の大きな柱状結晶を成長させる ことが可能になる。 柱状結晶の内部において分散している希土類リ ツチ相の平均間隔は、 好ましくは 1 0 Ai m以下である。\n\n【0040】上記の組織構造を持つ凝固合金は、 ストリップキャスト法ゆ合金 インゴッ 卜法などの従来方法によっては得られなかった。 以下、 従 来の方法によって作製される希土類一鉄一硼素系磁石用合金凝固合 金 （凝固合金） の結晶成長を説明する。\n\n【0041】まず、 図 2 ( a ) から （c ) を参照しながら、 ス卜リップキャス 卜法による結晶成長を説明する。 ス卜リップキャス卜法では、 冷却 速度が速し、 め、 高速で回転する冷却ロールなどの冶却部材の外側\n\nに接触した合金溶湯 Lは、 接触面から急速に冶却され、 凝固してゆ ぐ。 大きな冷却速度を得るためには合金溶湯 Lの量を少なぐする必 要があり、 また、 ス卜リップキャスト装置の構造上、 溶湯の逐次供 給を行うことができない。 その結果、 冷却部材上の溶湯 Lの厚さは 冷却過程で増加せず、 略一定であり、 その一定の厚さを有する溶湯 Lの内部において冷却部材との接触面から結晶成長が急速に進行し てゆくことになる。 冷却速度が速いため、 柱状結晶の短軸方向サイ ズは、 図 2 ( a ) から （c ) に示すように小さく、 最終的に得られ る凝固合金の金属組織は微細である。 希土類りツチ相は柱状組織の 内部には存在せず、 粒界に分散している。 ストリップキャス卜合金 では、 結晶粒のサイズが小さすぎるため、 結晶方位の揃っ 領域が 小さく、 各粉末粒子の磁気的巽方性が低下\'するという問題がある。 次に、 図 3 ( a ) から （d ) を参照しながら、 従来のインゴット 法による結晶成長を説明する。 インゴッ卜法では、 冷却速度が比較 的遅いため、 冷却部材に接触した合金溶湯 Lは、 接触面からゆつく りと冷却され、 凝固してゆく。 静止状態の溶湯 Lの内部において、 まず、 冷却部材との接触面に F e初晶が生成され、 その後、 図 3 ( b ) および （c ) に示すように、 F eのデンドライド結晶が成長 してゆく。 最終的には、 包晶反応により、 R2F e1 4B型結晶相が 形成されるが、 その内部には磁石特性を劣化させるび一 F e相が残 存することになる。 凝固合金の金属組織は粗大であるが、 体積比率 で 5 %を超えるような量の 一 F e相が残存する。 一 F eを低減 するためには、 均質化処理を行う必要がある。 具体的には、 インゴ\n\nッ ト合金中の 一 F e相や R2F e1 7相などを拡散させ、 これらの 相を可能な限り消滅させ、 実質的に R2F e1 4B相と R— r i c h 相の 2相からなる組織にする必要がある。 均質化熱処理は、 窒素を 除く不活性ガス雰囲気中または真空中において、 1 \"I 0 0 °C〜1 2 0 0 °Cの範囲の温度で 1〜4 8時間行われる。 このような均質化処 理は、 製造コストを増大させるという問題がある。 一方、 び一 F e の生成を抑制するには、 原料合金中に含まれる希土類の組成量を化 学量論比よりも充分に大きくすることが必要であるが、 希土類の含 有量が多くなると、 最終的に得られる磁石の残留磁化が ig下し、 ま 、 耐食性が劣化するという問題もある。\n\n【0042】一方、 本発明で用いる希土類一鉄一硼素系磁石用合金凝固合金 （ 図 1参照） は、 化学量論比に近い希土類含有量であっても、 一 F eが生成されにくし、という利点がある。 このため、 希土類含有量を 従来よりも低減することが可能である。 また、 本発明で用いる合金 は、 内部に希土類リッチ相が分散した複数の柱状結晶を含 金属組 織構造を有しているため、 粉末化すると、 液相になりゆすい希土類 リッチ相が粉末粒子の表面に現れゆすくなる。 その結果、 従来より ち低温かつ短時間で充分な焼結を達成し、 焼結時の粒成長を抑制す ることが可能になる。 また、 柱状結晶の内部に希土類リッチ相が細 かく分散しているため、 粉砕工程で希土類リッチ相が超微粉となつ て失われる確率も減少する。\n\n【0043】さらに本発明で用いる合金によれば、 前述し ように、 添加した D yや T bが粒界よりも主相に集まりゆすい。 これは、 合金溶湯の\n\n冷却速度がス卜リップキャス卜法による場合に比べて小さく、 D y や T bが主相中に取り込まれゆす 【0044】以上のように、 図 1 に示す方法で作製された合金によれば、 粉末 の焼結性が向上し、 かつ、 D yなどの希少資源が有効に機能するた め、 保磁力に優れ 焼結磁石を安価に提供することが可能になる。 更に、 インゴッ卜合金につし、て生じたような問題、 すなわち、 一 F eの生成ゆ焼結の困難といっ 問題が生じない め、 溶体化処理 に伴う製造コス卜上昇の問題も解決される。 具体的には、 希土類元 素の濃度を 2 7質量％»以上 3 5質量％»以下の範囲にし、 熱処理前の 凝固合金 （a s— c a s t ) 中に含まれる 一 F e相の比率を 5体 積％>以下に抑制することが可能である。 このため、 従来のインゴッ 卜合金に必要であった凝固合金に対する熱処理が不要になる。\n\n【0045】また、 本発明の好ましい実施形態によれば、 粉末の平均粒径が比 較的大きな場合であっても、 通常の急冷法によって作製した合金の 粉末のよ oに個々の粉末粒子が多結晶となることが少なく、 高い磁 気異方性が実現する め、 得られた焼結磁石の着磁特性を優れ ち のとすることができる。 平均の粉末粒径を大きく設定することによ り、 粉末の流動性が向上する。 また、 単位質量に対する粉末粒子の\n\n総表面積が相対的に小さくなるため、 酸化反廂に対する微粉砕粉の 活性度が低下する。 その結果、 酸化により無駄に消費される希土類 元素の量が少なくなり、 最終的な磁石の特性も劣化しにくくなる。\n\n【0046】[実施例]\n\n【0047】以下の表 1 に示す組成をターゲッ 卜として、 本発明による方 法 （遠心錶造法） 、 ストリップキャス卜法、 およびインゴッ 卜 法の 3種類の方法で希土類一鉄一硼素系磁石用合金凝固合金を 作製し 。 上記 3種類の方法により得られ 合金を、 それぞれ 、 合金 A、 合金 B、 および合金 Cと称することとする。 なお、 本発明が適用される合金内において、 ソと丁 とは、 ほぼ同 様の挙動を示すため、 ここでは D yを添加した実施例を説明す\n\n【0048】(表 1 )\n\n表\"！ における数値は、 上欄の示す元素の合金中における質量比率 である。\n\n【0049】本実施例で行った遠心鐯造法による合金は、 回転する円筒型冷却 部材の内側に対して、 上記組成の溶湯 （約 1 3 0 0 °C) を遠心力で 飛散させ、 冷却部材の内側表面上で冷却 ·凝固させることによって 作製した。 一方、 ス卜リップキャス卜法による合金は、 周速度 1 m ノ秒で回転する水)令冷却ロール （銅製） の外局表面に対して、 上記\n\n組成の溶湯 （約 1400°C) を接触させ、 急冷 ·凝固させることに より作製し 。 得られ 急冷合金は厚さ 0. 2mmの錶片であった また、 インゴッ 卜法による合金は、 上記組成の溶湯 （約 1 45 0°C) を水冷鉄錡型内に、 注ぎ込み、 徐冷することによって作製し た。 得られたインゴッ卜合金の厚さは約 25mmであった。\n\n【0050】本実施例では、 上記の方法で作製した合金 Aから Cに対して、 水 素脆化処理 （粗粉砕） を施し 後、 ジェットミルによる微粉砕を行 なった。\n\n【0051】水素脆化処理は、 次のよ にして行っ 。 まず、 原料合金を水素 処理炉内に封入し、 炉内を真空置換した後、 0. 3MP aの 1~12ガ スで満 し、 1時間の加圧処理 （水素吸蔵処理） を行っ 。 この後、 再び水素処理炉の内部を真空にし、 その状態で 400°C 3時間の熱 処理を行うことにより、 合金から余分な水素を放出させる処理 （脱 水素処理） を行った。\n\n【0052】ジェッ トミルによる粉砕に際しては、 粉砕ガスとして 0. 6MP aの N2ガスを用いた。 粉砕ガス中の酸素濃度は 0. 1体積％であ つ 。\n\n【0053】なお、 脆化処理後の合金をジエツ 卜ミルに投入する際、 各合 金の供給量を調整することにより、 合金 Aから Cのそれぞれに ついて 2種類の粒度分布を有する微粉砕粉を作製した。\n\n【0054】こ して作製した各種の微粉砕粉を配向磁界中で圧縮成形、 成形 体を作製し 。 成形工程は、 全ての場合において、 以下に示す同一 の条件で行った。\n\n配 ^磁界強度： 1. OMAZm\n\n【0055】粉末に対する加圧力 ： 98.MP a\n\n【0056】配向磁界の方向 ： 加圧方向と直交\n\n【0057】こうして作製し 成形体につき、 種 の温度で焼結を行い、 焼結 体を得だ。 時効処理 （520°C I h) を行った後、 各焼結体 （焼 結磁石） の成分を分析した。 分析結果を表 2に示す。 表 2の 「粉砕 粒度」 は、 FSSS平均粒径である。\n\n【0058】(表 2)\n\n【0059】Nd Pr Dy Fe Co Al Cu B 0 合金 A (本発明） 15.1 4.95 9.95 66.5 0.91 0.25 0.10 1.00 0.03 粉砕粒度 微粉末 14.9 4.90 10.06 66.8 0.91 0.26 0.10 1.00 0.30\n\n【0060】3.1 llm 焼結体 14.9 4.90 10.06 66.9 0.92 0.25 0.10 1.00 0.32\n\n【0061】3.6 βτη 微粉末 15.0 4.92 10.08 66.8 0.92 0.24 0.11 1.01 0.28\n\n【0062】焼結体 14.9 4.91 10.09 66.8 0.92 0.24 0.10 1.00 0.29 合金 B (SC) 15.2 4.98 9.98 66.3 0.89 0.24 0.09 0.99 0.03\n\n【0063】2.8 Urn 微粉末 14.6 4.86 9.92 67.0 0.90 0.25 0.10 1.00 0.31\n\n【0064】焼結体 14.7 4.88 9.91 66.9 0.90 0.24 0.09 1.00 0.32\n\n【0065】3.4 flm 微粉末 14.7 4.89 9.94 66.8 0.89 0.24 0.09 0.99 0.29\n\n【0066】焼結体 14.7 4.89 9.94 66.9 0.90 0.24 0.09 1.00 0.30 合金 C (インゴット） 15.1 4.99 9.93 66.4 0.92 0.25 0.10 1.00 0.03\n\n【0067】3.2 Um 微粉末 14.5 4.83 9.95 66.9 0.93 0.24 0.10 1.00 0.29\n\n【0068】焼結体 14.5 4.85 9.95 67.0 0.93 0.25 0.10 1.00 0.30\n\n【0069】3.6 Um 微粉末 14.6 4.85 9.97 66.8 0.92 0.25 0.09 1.00 0.27\n\n【0070】焼結体 14.6 4.86 9.96 66.8 0.93 0.25 0.10 1.00 0.29\n\n表 2における数値は、 対 ¾する元素の組成 （質量比率） を示して しヽる。 より詳細に述べると、 表 2は、 合金 Aから Cを用いて作製し た各 2種類の粒度の異なる粉末について、 合金、 微粉末、 および 焼結体の組成を示している。 各段階の組成を知ることにより、 粉砕 工程前後における組成の変動を把握することができる。\n\n【0071】表 2からわかるよ に、 本発明による合金 Aの場合、 微粉末中の Nd濃度ゆ D y濃度が他の合金 Bおよび Cに比較して高い。 このこ とは、 合金中の Ndおよび Dyが水素脆化処理工程およびジエツ卜 ミルによる微粉砕工程の間に失われにくいことを示している。\n\n【0072】この理由は次のように者えられる。 従来のス卜リップキャス卜合 金 （合金 B) やインゴッ卜合金 （合金 C) において、 Ndなどの軽 い希土類元素は、 R2F e14B型結晶の化学量論比よりち高い濃度 で粒界に存在する一方、 主相結晶粒内においては R2F e14B型結 晶の化学量論比で決まる値で存在する。 一方、 Dyなどの重希土類 元素は、 特に合金 Bにおいて、 粒界相および主相中に広く分布して いる。 また、 水素脆化は、 希土類元素濃度の高し、粒界部分を膨張さ せ、 その部分から割れやすくするため、 水素脆化および微粉砕工程 で発生し 超微粉末 （粒径： 〇. 5 m以下） は、 粒界に由来し、 N dや D yを多く含有することになる。 そして、 本実施例では、 こ のような超微粉をジエツ卜ミルで粉末を回収する際に除去している I ぬ、 結果的に Ndゆ D yが失われやすくなる。\n\n【0073】これに対し、 合金 Aを用いる場合は、 比較的粗大な主相結晶粒の 内部に希土類りツチ相が分散しているため、 柱状晶の間に存在する\n\n粒界相 （R— r i c h相） が相対的に少なくなつている。 さらに、 重希土類元素は粒界にほとんど存在せず、 主相に濃縮してし、る。 こ れらのことから、 合金 Aでは、 水素脆化処理およびジエツミルによ る微粉砕工程において、 超微粉そのちのが少なく、 NdJDyが超 微粉に含まれだ形態で失われてゆぐ割合が相対的に少なくなるちの と考えられる。\n\n【0074】次に、 上記の合金 Aから Cの粉末を用いて作製した焼結磁石の磁 石特性を表 3に示す。\n\n【0075】(表 3)\n\n【0076】A\n\n【0077】口 m. 粉碎粒度焼結温度 密度 Br HcB\n\n【0078】( jUm) (°C) (Mg/m3) (T) (kA/m)\n\n【0079】A1 3.1 1040 7.4 1.17 895 2300 261\n\n【0080】A2 3.1 1050 7.5 1.18 903 2370 266 し 3\n\n【0081】A3 3.1 1060 7.6 1.20 918 2340 275\n\n【0082】A4 3.6 1040 7.2 1.15 888 2110 255\n\n【0083】A5 3.6 1060 7.5 1.19 919 2290 274 X\n\n【0084】A6 3.6 1080 7.6 1.21 935 2320 283\n\n【0085】B1 2.8 1040 7.5 1.15 875 2240 253\n\n【0086】B2 2.8 1050 7.6 1.17 890 2230 262\n\n【0087】B3 3.4 1040 7.5 1.12 \' 845 2180 237\n\n【0088】B4 3.4 1050 7.6 1.14 860 2180 245\n\n【0089】C1 3.2 1060 7.3 1.14 872 1970 249\n\n【0090】C2 3.2 1080 7.6 1.19 911 1980 271\n\n【0091】C3 3.6 1070 7.2 1.13 873 1820 247\n\n【0092】C4 3.6 1090 7.5 1.17 903 1840 264\n\n表 3において、 A 1から A 6は、 合金 Aの粉末から作製した焼結 磁石、 それぞれ、 合金粉末の平均粒径や焼結温度が異なっている。 B 1から B 4は、 合金 Bの粉末から作製し 焼結磁石であり、 C 1 から C 4は、 合金 Cの粉末から作製した焼結磁石である。\n\n【0093】表 3からは、 合金 Aを用いて焼結磁石を作製した揚合、 合金 Cを 用いて焼結磁石を作製した場合に比べて相対的に低い焼結温度で高 い密度および優れた磁石特性が発揮されていることがわかる。 この ことは、 合金 Aの粉末が合金 Cの粉末に比べて焼結しゆすいことを 意味している。\n\n【0094】また、 合金 Aの粉末の平均粒径が合金 Bの粉末の平均粒径に比べ て大きい場合でも、 合金 Aの粉末から作製しだ焼結磁石は、 合金 B の粉末から作製し 焼結磁石に比較して高い残留磁束密度 B rを発 揮している。 これは、 合金 Aの主相サイズが合金 Bの主相サイズに 比較して大きいため、 合金 Aの粉末粒径が相対的に大きな場合でも, 粉末粒子の磁気異方性が高く、 焼結磁石の磁気配向度が向上するか らである。\n\n【0095】焼結磁石 A 6および焼結磁石 B 2について、 それぞれ、 着磁特性 を評価した。 図 4は、 着磁特性を示すグラフであり、 横軸が焼結磁 石に印加した着磁磁界の強度であり、 縦軸が着磁率を示している。 図 4からわかるように、 焼結磁石 A 6は焼結磁石 B 2に比べて着磁 特性が改善されている。 これは、 合金 Aにおける主相のサイズが合 金 Bにおける主相のサイズよりも大きく、 組織が均一であるため、 より着磁しゃすくなつてい めと考えられる。\n\n次に、 上記の焼結磁石に含まれる希土類元素の原子数比率を主相 および焼結磁石全体について測定した。\n\n【0096】焼結磁石 A 3、 B 1 および C 2についての測定結果を、 それぞ れ、 表 4、 表 5、 および表 6に示す。 各表における数値は、 主相ま は焼結磁石全体に含まれる希土類元素全体に占める N d、 P r、 および D yの原子数比率 （以下、 単に 「比率」 と略記する場合があ る。 ） である。\n\n【0097】(表 4 )\n\n【0098】上記の表 4、 表 5、 および表 6からわかるよ に、 主相における D yの比率は、 合金 Aに係る焼結磁石において最も高い。 表 4に示\n\nされるよ に、 焼結磁石全体における D yの比率は 3 1 . 0である のに対して、 主相のみに含まれる D yの比率は 3 2. 5であり、 3 1 . 0に比べて 4%以上ち高い。 このことは、 粒界相における D y 濃度よりも主相における D y濃度が高く、 D yが主相中に濃縮され ていることを意味している。 このような現象は、 合金 Bに関する表 5からは読みとれない。 このような差異が生じるのは、 ストリップ キャス卜法によって合金 Bを作製する場合は合金溶湯の冷却速度が 高すぎる め、 D yが主相ゆ粒界相の区別無く広い範囲で均一に分 布するのに対し、 合金 Aの作製工程では溶湯の冷却速度が比較的遅 いため、 D yが主相に拡散し、 主相中に安定に存在し得るからであ る。\n\n【0099】本発明の好ましい実施形態においては、 主相内における D yおよ び/または T bの比率は、 合金または焼結磁石全体における D yお よび Zま は T bの比率の 1 . 0 3倍以上の大きさを有している。 D yおよびノまだは T bの効率的に利用して保磁力を向上させると いう観点からは、 主相内における D yおよび Zまたは T bの比率が、 合金または焼結磁石全体における D yおよび/または T bの比率の 1 . 〇5倍以上の大きさとなるようにすることが更に好ましい。 図 5および図 6は、 本発明による希土類一鉄一硼素系磁石用合金 凝固合金の偏光顕微鏡写真を示してし、る。 図 5は、 冷却部材との接 触面近傍の組織断面を示しており、 図 6は、 厚さ方向中央部の組織 断面を示している。 各図の上方が冷却面、 下方が放冷面 （自由面） 側を示してし、る。 図からわかるように、 接触面から 1 〇〇 i m程度\n\nまでの領域では微細な結晶組織 （第 1組織層） が形成されているが, 接触面から 1 0 0 m程度離れた内部側の領域 （第 2組織層） では 大きな柱状結晶が形成されている。 一方、 自由面の近傍では、 一部 に微細な組織が観察されるが、 大部分は粗大な結晶である。 なお、 合金鎵片の厚さは 5〜8 m mであり、 その大部分は、 粗大な柱状結 晶の第 2組織層から構成されてし、る。 なお、 第 1組織層と第 2組織 層との境界は、 場所によって明暸な部分と不明瞭な部分とが存在す る。\n\n【0100】希土類含有量の異なる合金の試料の組織攉造を比較したところ、 希土類元素濃度が高い合金ほど、 結晶サイズが小さくなつているこ とがわかった。\n\n【0101】粗大な結晶粒の組成像を観察したところ、 希土類リツチ相が分散 していることが確認できた。 粗大な結晶粒中に分散する希土類リッ チ相は、 凝固合金中の希土類含有量が多くなるほど、 多く観察され 。 ま 、 α— F e相は観察されなかっ 。\n\n【0102】このよ な合金を粉砕して粉末化する揚合、 F S S S平均粒径が 3. 0 m以上 5. 0 i m以下の範囲に制御することが好ましい。 このよラに、 従来に比べて大きな平均粒径が得られるように合金を 粉砕することにより、 焼結磁石の残留磁束密度 B「を高め、 かつ、 含有する酸素濃度を低減することが可能になる。 産業上の利用可能性\n\n【0103】本発明によれば、 急冷合金に比べてサイズの大きな主相中に D y\n\nゆ T bが濃縮され、 効果的に保磁力が増加する。 また、 凝固合金に 含まれる主相のサイズが比較的大きし、にちかかわらず、 び一 F eが 生成されず、 また、 粉末の焼結性ち向上する。 このため、 焼結磁石 の製造コス卜が大きく低減される。', '【0001】说明稀土-铁-铁-硼合金粉末用于磁体的烧结磁体技术领域\n\n  稀土-铁-铁-硼合金和烧结磁体及其制造方法【0002】 背景技术\n\n  【0003】作为典型的高性能永磁体的稀土-铁-硼基稀土磁体（以下有时称为“ R-Fe-B磁体”）是三元四方化合物。  R2，Fe1 4以B型晶相为主相且具有组织，并且具有优异的磁铁特性。 在此，R为选自由稀土元素和钇组成的组中的至少一种元素，并且F e Y B的一部分可以被另一种元素代替。 射频磁体大致分为烧结磁体和粘结磁体。烧结磁体是通过将射频磁体的合金细粉（平均粒径：几米）压制成型的。 它是通过在设备中进行压模成型然后烧结而制成的，而池塘磁体通常是RfB型磁体的合金粉末（例如，粒径为100μm）。  171然后在压力机中将粘合剂树脂压制成型。用于制造此类射频磁体的粉末为射频。 它是通过压碎e-B磁铁的合金制成的。\n\n 它是通过使用铣削法和唇唇铸造法生产的，其中通过使用冷却辊将熔融合金快速冷却。\n\n  【0004】在通过铸锭法制造的合金中，其在熔融金属的缓慢通过中析出，并作为一次晶体FΘ和F e保留在组织中，因此粉碎效率显着降低并且获得了最终的磁体。 存在降低矫顽力的问题。 为了解决该问题，固溶处理对于消除通过铸锭法获得的合金中的Fe是必不可少的。 固溶处理是在超过100℃的高温下长时间进行的热处理，这会降低生产率并增加制造成本。 另外，在通过铸锭法烧结合金粉末的过程中，应该是液相的低熔点相局部化，因此需要将烧结温度设定得高并且烧结时间长。 无法获得烧结矿密度。 结果，在烧结过程中主相的晶粒粗大地生长，使得难以获得具有高矫顽力的烧结磁体。\n\n  【0005】另一方面，在通过唇铸法生产的合金中，通过冷却辊等将熔融合金快速冷却并固化，从而使晶体结构细化。 因此，可以得到将在烧结过程中应成为液相的低熔点晶界相均匀且细分的淬火合金。 如果晶界相均匀且精细地分布在合金中，则在将合金压碎后得到的粉末颗粒中，主相和晶界相很可能彼此接触，并且晶界相将成为烧结过程。 变成液相以加速烧结过程。 因此，可以将烧结温度保持在较低的水平，可以缩短烧结时间，并且可以抑制晶粒的粗大化，从而获得高矫顽力的烧结磁铁。\n\n 可能的。 另外，根据滑唇浇铸法，由于在淬火合金中几乎不析出1Fe，因此不需要固溶处理。\n\n  【0006】然而，在带钢铸造合金的情况下，其晶体结构极细，并且难以将每个粉末晶粒精细地粉碎成单晶粒。 如果粉末颗粒是多晶的，则磁各向异性会变小，并且粉末在磁场中的取向♦即使进行压缩成型，烧结相的主相取向度也很高，剩磁也很高。 可以制造。\n\n  【0007】另一方面，为了提高RFe_B系烧结磁铁的耐热性，即使在高温下也维持高矫顽力，以往在原料合金中添加了Dy。  ..  D y是一种稀土元素，具有增加R-Fe-B基烧结磁体R2FΘi4的各向异性磁场的作用。 在那儿。 由于D y是稀有元素，因此未来电动汽车的实用性将会提高，并且对电动汽车的电动机中使用的高耐热磁体的需求将会增加，导致资源紧张，从而导致原材料成本下降。 人们担心农作物的数量会增加。 因此，强烈需要开发用于高矫顽力磁体的Dy用量减少技术。 但是，在带钢铸造合金的情况下，为了提高矫顽力等，添加了D y等重稀土元素，并且这些重稀土元素也分布在晶界相中并在主相中形成。 存在重稀土元素的浓度降低的问题。 仅当重稀土元素（例如D y）位于主相中时，它们才能对磁体特性产生影响。  D y是，如果熔融合金的淬火速率足够低，\n\n 它倾向于进入主相并稳定地存在于主相中。但是，当冷却速度如唇模法那样高时，晶界部分的主要部分在熔融合金的凝固过程中凝固。 这是因为没有时间扩散到阶段中。 因此，可以降低熔融合金的冷却速度，使D y集中在主相中。但是，如果降低熔融合金，则晶粒变粗，如关于铸锭合金所述。 存在产生一个F e的问题。\n\n  【0008】是鉴于上述情况而完成的，其目的在于使重稀土元素例如D y以相对高的浓度存在于主相而不是晶界相中。 此外，本发明的另一个目的是提供一种易于烧结的稀土-铁-铁-硼基合金粉末及其制造方法。\n\n  本发明的另一个目的是提供作为上述粉末的原料的合金，由上述粉末制得的烧结磁体及其制造方法。 发明内容\n\n  本发明的稀土-铁-铁-硼磁体用合金包括多个R2，Fe1 4，B型晶体（R是稀土金属），其中分散有富稀土的氮化物相。 元素和至少一种选自钇的元素作为主相，所述主相高于晶界相并且具有D y和/或T b的浓度。 哲郎\n\n  【0011】在一个优选的实施方式中，D y和/或T b的含量为整个合金的2.5质量％以上且15质量％以下。\n\n 在一个优选的实施方案中，主相中D y与T或T b的比率大于整个合金中D y与静止T b的比率的1.03倍。 有。\n\n  【0012】在优选的实施方式中，一种Fe相的比例为5体积％以下。\n\n  【0013】在优选的实施方式中，稀土元素的浓度为27质量％以上且35质量％以下。\n\n  本发明的磁体用稀土-铁-铁-硼基合金的粉末是通过将上述任何一种合金粉碎而获得的。\n\n  【0015】本发明的烧结磁铁是由上述稀土-铁-铁-硼磁铁用合金粉末制成的。\n\n  【0016】根据本发明的用于生产稀土-铁-铁-硼基磁体的合金的方法包括以下步骤：制备稀土-铁-铁-硼基合金的熔融金属；以及通过使熔融金属下降来制备凝固的合金。 一种稀土亚铁硼基磁铁合金的制造方法，该方法包括以下步骤：制造凝固合金，其中，通过使合金的熔融构件与冷却构件接触来执行制造凝固合金的步骤。  R2，F1 4B型晶体（R为选自稀土元素和钇中的至少一种）。 元素）作为主相，包括产生凝固合金层的步骤，其中主相比晶界相包含更高的D y和/或T b浓度。 有。\n\n  【0017】在优选的实施方式中，D y和/或T b的含量相对于合金整体为2.5质量％以上且15质量％以下。\n\n 在优选的实施方式中，主相中的Dy和/或Tb的比例是整个合金中的Dy和Z或Tb的比例的1.03倍以上。\n\n  【0018】在优选的实施方式中，形成固化合金层的步骤包括以下步骤：在与冷却构件接触的一侧上形成第一纹理层，并且在第一纹理层上进一步形成合金的熔融金属。 通过在第一纹理层上提供R2，Fe4B型晶体以形成第二纹理层。\n\n  【0019】在一个优选的实施方式中，在第一织构层的形成期间的熔融合金的冷却在10℃Z秒以上且1000℃以下的秒进行，过冷为100℃以上300℃以上。 当形成第二织构层时，将熔融合金在1℃Z秒以上且500℃C秒以下的温度下冷却。 形成第二织构层时的熔融合金的冷却速率比形成第一织构层时的熔融合金的冷却速率慢。\n\n  【0020】在一个优选的实施方式中，R型2，Fe14B型晶体的短轴方向的平均尺寸为20以上，长轴方向的平均尺寸为1000m以上。  ..\n\n  在一个实施方案中（在该实施方案中，富稀土相以10m或更小的平均间隔分散在R2，Fe14，B型晶体中。 哲郎\n\n  【0022】凝固合金中所含的一种Fe相的比例为5体积％以下。\n\n  【0023】凝固合金中所含的稀土元素的浓度为27质量％以上»\n\n 为35质量％以下。\n\n  【0024】在优选的实施方式中，固化合金层通过离心钻孔法形成。\n\n  【0025】根据本发明的用于烧结磁体的磁体粉末的制备方法如上所述，并且制备通过上述方法制备的稀土-铁-铁-硼基磁体合金的步骤以及将所述合金粉碎的步骤。 包括和。\n\n  【0026】根据本发明的烧结磁体的制造方法包括以下步骤：制备稀土-铁-铁-硼-基磁体合金的粉末，并在定向磁场中压缩该粉末以产生成形体。 以及烧结成型体的步骤。 附图的简要说明\n\n  【0027】图1（a）至1（d）是示意性地示出其中形成用于制造本发明的磁体粉末的稀土单铁-硼基磁体合金的金属组织的过程的截面图。 是的。 \n\n【0028】图2（a）至2（c）是示意性示出其中通过带式铸造方法形成稀土-铁-铁-硼基磁体合金的金属组织的过程的截面图。\n\n  【0029】图3（a）至3（d）是示意性地示出通过传统的铸锭方法形成用于稀土-铁-铁-硼磁体的合金的金相组织的过程的截面图。\n\n  【0030】图4是示出根据本发明的烧结磁体的实施例和比较例的磁化特性的图。\n\n 是强度，纵轴表示磁化率。\n\n  【0031】图5是根据本发明的稀土-铁-铁-硼基磁体合金的极化显微镜照片，其显示了在与冷却构件的接触表面附近的组织横截面。 图6是根据本发明的用于稀土-铁-铁-硼磁体的合金的极化显微镜照片，其示出了在厚度方向上的组织截面。 具体实施方式本发明人评估了具有各种结构形态的稀土-铁-铁-硼基磁铁合金中D y的浓度分布，如图1（d）所示。 与晶界相相比，具有各种金属结构的稀土-铁-硼基磁铁合金的主相（R2Fe14B型晶体）具有较高的浓度。 我们发现D y存在。\n\n  【0032】图1（d）示意性地示出了根据本发明的用于稀土-铁-铁-硼磁体的合金的金属结构。 该合金具有其中细的富稀土相（图中显示为黑点状区域）分散在较大的柱状晶体内的结构。 这种包含散布有稀土荔枝相的多个柱状晶体的合金具有这样的结构，其中熔融的稀土-铁-硼合金与冷却构件接触，并且熔融的合金被冷却并固化。 可以形成。 合金的成分为R2F e4与B型晶体的化学计量比相比，R-“对于ich组分包含过量的R， 可以使用添加了各种元素的元素，例如，稀土-铁-铁-硼磁体的凝固合金的组成为R 1x1R2x 2T1 0nx  i -x2-y-ZQ y M2表示为（质量比）\n\n 在这种情况下，R 1是选自下面的R 2以外的稀土元素和锂中的至少一种元素，T是F e和Z或Co，Q是B（硼）和C（碳）。  ）选自R 2的至少一种元素，R 2为选自D y和T b的至少一种元素，M为A和Ti，V，Cr，Mn， 它是选自Ni，Cu，Zn，Ga，Zr，Nb，Mo，In，Sn，Hf，Ta，W和Pb的至少一种元素。 此外，B的一部分可以用N，S i，P和/或S代替。 如果x，z和y为质量比，则分别为2≤x1 + x 2≤35.0.95≤y≤1.05、2.5≤X 2≤15。  ，并且优选0.1≤Z≤2。\n\n  【0033】在下文中，将参考图1（a）至1（d）详细描述用于制造上述合金的优选方法。\n\n  【0034】首先，如图1（a）所示，使熔融金属L与冷却部件（例如铜制夹具冷却辊）接触，以使其与冷却部件接触的一侧。 包含精细初级晶体（R2Fe14B）的第一纹理层形成得很薄。 此后，或在形成第一纹理层时，将上述合金的熔融金属L进一步供应到第一纹理层上，以在第一纹理层上生长柱状晶体（R.F e B□S2）。  （图1（b））在继续供给熔体的同时，在冷却速度低于初始冷却速度的条件下冷却合金熔体而形成柱状晶体。 如图4所示，熔融合金中的稀有金属供应相对缓慢。\n\n 土元素不扩散到位于下方的大的柱状晶体的晶界，固化进行，并且其中富稀土相分散在内部的柱状晶体长大。 因此，当在凝固的初始阶段形成初级晶体时，将冷却速度设定得较高，而在随后的晶体生长中，冷却速度变慢，因此最终结果如图1（d）所示。 因此，获得了包含粗糙的柱状晶体的第二纹理层。\n\n  【0035】由于第二组织层在凝固后立即在热的第一组织层上冷却，因此可以通过调节熔融金属的供给量来调节第二组织层，而无需任何特殊手段。 可使层的冷却速率慢于第一组织层的冷却速率。\n\n  【0036】形成细微的一次晶体聚集体的第一织构层时的熔融合金的冷却以10℃/秒以上且100℃以下的温度进行，过冷却为100℃。 优选在不低于℃且不高于300℃的条件下进行。 过冷可以抑制Fe初生晶体的沉淀。 另一方面，在形成第二纹理层时，优选在供给熔融金属的同时在1℃Z秒以上且500℃Z秒以下的条件下冷却熔融合金。\n\n  【0037】由于通过将熔融金属供给到冷却部件上的速率来调节冷却速率，因此使用允许调节熔融金属供给速率的冷却方法来获得上述低合金组织。 这个非常重要。 更具体地，为了获得本发明的合金结构，期望将熔融金属均匀且少量地供应到冷却构件上（例如锚固型）。 因此，优选进行冷却方法，在该方法中，将熔融金属制成液滴并进行分散喷雾。 例如，将气体喷射到熔融金属流上以对其进行喷射的方法，或者通过离心力使液滴飞散。\n\n 可以采用该方法。\n\n  【0038】本发明的熔融金属冷却方法的另一个重要点是，所产生的熔融金属液滴以高收率被收集在冷却部件上（有效地用于形成凝固合金）。 为了提高成品率，可以使用平板冷却法，通过气体喷雾将熔融金属液滴喷洒到水冷钢模具上，或者将熔融金属液滴分散在旋转的圆筒状的鼓状冷却部件的内壁上的方法。 期望使用（离心炼钢法）。 此外，可以采用通过旋转电极法产生熔融金属滴并将熔融金属滴沉积在冷却构件上的方法。 重要的是，在与冷却构件接触的盆中形成晶核之后，将相对较慢的熔融合金供应到它们上。 这样，通过平衡冷却时的散热量和熔融金属的供给量，可以实现上述特殊的金相组织。\n\n  【0039】通过上述冷却方法，可以生长在短轴方向上的平均尺寸为20m以上且在长轴方向上的平均尺寸为100m以上的大的柱状晶体。 分散在柱状晶体内部的稀土闩锁相的平均间隔优选为10Aim或更小。\n\n  【0040】具有上述显微组织的凝固合金不能通过常规方法如带铸法和合金铸锭法获得。 在下文中，将描述通过常规方法生产的用于稀土-铁-铁-硼磁体的合金凝固合金（凝固合金）的晶体生长。\n\n  【0041】首先，参照图2（a）至2（c），将描述通过唇唇浇铸法的晶体生长。 在唇盒方法中，冷却速度高，因此夹具（例如冷却辊）的外部会高速旋转。\n\n 与金属接触的熔融合金L从接触表面迅速刮擦并固化。 为了获得高的冷却速率，必须减少熔融合金L的量，并且由于唇边铸造设备的结构，不可能连续地供应熔融金属。 结果，冷却部件上的熔融金属L的厚度在冷却过程中不会增加并且几乎恒定，并且晶体生长从具有该恒定厚度的熔融金属L内部的与冷却部件的接触表面快速进行。 将会完成。 由于冷却速度快，所以如图2（a）至（c）所示，柱状晶体的短轴尺寸小，并且凝固合金的最终显微组织良好。 稀土晶格相不存在于柱状结构内部，而是分散在晶界处。 在带状铸造合金中，晶粒的尺寸太小，使得晶体取向排列的区域较小，并且每个粉末晶粒的磁倾斜性降低。 接下来，参考图3（a）至3（d），将描述通过常规的锭法的晶体生长。 在铸锭法中，冷却速度相对较慢，因此与冷却构件接触的熔融合金L从接触表面被缓慢冷却并凝固。 如图3（b）和（c）所示，在静态熔融金属L内部，首先在与冷却构件的接触表面上生成F e初晶，然后，生长F e枝晶。 继续。 最终，包晶反应形成了R2Fe1 4B型晶相，但在其中却存在一个铁相，这使磁性能下降。 这将是。 尽管凝固的合金具有粗糙的金相组织，但是剩余的一种Fe相的量超过5体积％。 为了降低F e，需要均质化处理。 具体来说，Ingo\n\n 合金中的F e相和R2F e1 7相，这些相被尽可能地消除，而R2  1 4必须具有一个由两个阶段组成的组织，即B阶段和R富集阶段。 均质化热处理是在不包括氮气的惰性气体气氛中或在真空中在1” I 0°C至120°C的温度范围内进行1至48小时。 但是，为了抑制Fe的产生，原料合金中所含的稀土元素的组成应充分大于化学计量比。 然而，如果稀土含量增加，则最终获得的磁体的剩余磁化强度将降低ig，并且耐腐蚀性也将劣化。 \n\n另一方面，即使稀土含量接近化学计量比，本发明中使用的稀土-铁-铁-硼基磁体合金凝固合金（见图1）也不会产生1 Fe。 梳理有一个优势。 因此，可以比以前更多地减少稀土含量。 此外，由于本发明中使用的合金具有包含多个分散有富稀土相的柱状晶体的含金属结构结构，因此当粉末化时，富稀土相变为液相，而富稀土相变为粉末颗粒。 出现在表面并变浅。 结果，变得可以在比以往更低的温度和更短的时间内实现足够的烧结，并且可以抑制烧结期间的晶粒生长。 另外，由于富含稀土的相精细地分散在柱状晶体内部，因此也降低了在粉碎过程中富含稀土的相作为超细粉末损失的可能性。\n\n  【0043】此外，如上所述，根据本发明中使用的合金，添加的D y和T b聚集在主相而不是晶界处并被冲洗。 这是熔融合金\n\n 这是因为与使用唇盒法的情况相比，冷却速度较小，并且D y和T b被引入到主相中。 因此，在本发明的优选实施方式中，将稀有资源之一的Dy或Tb的浓度设定为2.5质量％以上且15质量％以下的范围内，其添加效果为： 这与在常规的不锈钢唇铸合金中将Dy和Tb的浓度设定为3.0质量％以上且16质量％以下时几乎相同。\n\n  【0044】如上所述，根据图1所示的方法制造的合金，粉末的烧结性提高，有效地发挥了D y等稀有资源的作用。 优良的磁力使得可以以低成本提供烧结磁体。 此外，由于不会发生铸锭合金产生的问题，即，难以形成和烧结1 Fe的问题，因此解决了由于固溶处理而导致制造成本增加的问题。 它 具体而言，将稀土元素的浓度设定在27质量％〜35质量％以下的范围内，并且热处理前的凝固合金（铸造）中所含的一种F e相的比例为5个体。 有可能抑制产物％>或更小。 因此，不需要常规的锭合金所必需的对固化合金的热处理。\n\n  此外，根据本发明的优选实施方式，即使粉末的平均粒径相对较大，也可以将单独的粉末添加到通过常规淬火方法生产的合金粉末中。 由于颗粒很少变为多晶并且实现了高的磁各向异性，所以所获得的烧结磁体的磁化特性可以是优异的。 通过设定较大的平均粉末粒径，可以改善粉末的流动性。 另外，粉末颗粒\n\n 由于总表面积相对较小，因此细磨的粉末抗氧化反应的活性降低。 结果，减少了由于氧化而浪费的稀土元素的量，并且最终的磁体特性不太可能劣化。\n\n  【0046】[示例]\n\n  【0047】以下表1所示的组成为目标，可以以三种不同方式使用基于稀土-铁-铁-硼的方法：根据本发明的方法（离心法），带坯铸造法和铸锭法。 制造用于磁铁的凝固合金。 通过以上三种方法获得的合金分别称为合金A，合金B和合金C。 在应用了本发明的合金中，Saw和Ding表现出几乎相同的行为，因此，在此说明添加D y的例子。\n\n  【0048】（表1）\n\n 表“！”中的数字是合金中上栏中显示的元素的质量比。\n\n  【0049】通过在离心力的作用下将上述组成的熔融金属（约1300℃）分散在旋转的圆筒形冷却部件的内部，来制备通过本实施例中使用的离心炼钢方法制造的合金。 通过在冷却构件的内表面上冷却并固化而制备。 另一方面，通过唇盒法制造的合金被用于以1毫秒的圆周速度旋转的水冷却辊（由铜制成）的外表面。\n\n 通过使组成成分的熔融金属（约1400°C）接触，淬火和固化来制备。 所获得的淬火合金为0.2mm厚的片。对于通过铸锭法制备的合金，将具有上述组成的熔融金属（约1450℃）倒入水冷铁模具中并缓慢冷却。 它是由 所获得的锭合金的厚度为约25mm。\n\n  【0050】在该示例中，对通过上述方法制造的合金A至C进行氢脆化处理（粗粉碎），然后通过喷射式粉碎机进行细粉碎。\n\n  【0051】氢脆化处理如下进行。 首先，将原料合金密封在氢处理炉中，并用真空置换炉中的气氛，然后在0.3MPa下以1比1的气体2填充气体。  ）完成。 之后，再次将氢处理炉的内部抽空，在该状态下在400℃下进行3小时的热处理，从而进行用于从合金中释放多余的氢的处理（脱氢处理）。\n\n  【0052】当用喷射磨机研磨时，使用0.6MPa的N2气体作为研磨气体。 粉碎气体中的氧气浓度为0.1体积％。\n\n  【0053】将脆化处理后的合金放入JET轧机中时，通过调节每种合金的供给量，合金A至C中的每种具有两种类型的细晶粒尺寸分布。 制备粉碎的粉末。\n\n  【0054】将由此产生的各种细粉粉末在定向磁场中压缩成型以制备成型体。 在所有情况下，模制过程均在以下所示的相同条件下进行。\n\n 分布^磁场强度：1. OMAZm\n\n  【0055】粉末的加压力：98.MPa\n\n  【0056】方向磁场的方向：与按压方向正交\n\n  【0057】在各种温度下烧结由此制备的成型体以获得烧结体。 在时效处理（520℃I h）之后，分析每个烧结体（烧结磁体）的成分。 表2示出了分析结果。 表2中的“粉粒尺寸”是FSSS平均粒径。\n\n  【0058】（表2）\n\n  【0059】Nd Pr Dy Fe Co Al Cu B 0合金A（本发明）15.1 4.95 9.95 66.5 0.91 0.25 0.10 1.00 0.03研磨粒度细粉14.9 4.90 10.06 66.8 0.91 0.26 0.10 1.00 0.30\n\n  【0060】3.1 llm烧结体14.9 4.90 10.06 66.9 0.92 0.25 0.10 1.00 0.32\n\n  【0061】3.6βτn细粉15.0 4.92 10.08 66.8 0.92 0.24 0.11 1.01 0.28\n\n  【0062】烧结体14.9 4.91 10.09 66.8 0.92 0.24 0.10 1.00 0.29合金B（SC）15.2 4.98 9.98 66.3 0.89 0.24 0.09 0.99 0.03\n\n  【0063】2.8 Fine粉14.6 4.86 9.92 67.0 0.90 0.25 0.10 1.00 0.31\n\n  【0064】烧结体14.7 4.88 9.91 66.9 0.90 0.24 0.09 1.00 0.32\n\n  【0065】3.4 flm细粉14.7 4.89 9.94 66.8 0.89 0.24 0.09 0.99 0.29\n\n  【0066】烧结体14.7 4.89 9.94 66.9 0.90 0.24 0.09 1.00 0.30合金C（锭）15.1 4.99 9.93 66.4 0.92 0.25 0.10 1.00 0.03\n\n  【0067】3.2 Um细粉14.5 4.83 9.95 66.9 0.93 0.24 0.10 1.00 0.29\n\n  【0068】烧结体14.5 4.85 9.95 67.0 0.93 0.25 0.10 1.00 0.30\n\n  【0069】3.6 Um细粉14.6 4.85 9.97 66.8 0.92 0.25 0.09 1.00 0.27\n\n  【0070】烧结体14.6 4.86 9.96 66.8 0.93 0.25 0.10 1.00 0.29\n\n 表2中的数值表示相应元素的组成（质量比）。 更具体地，表2示出了分别使用合金A至C生产的两种具有不同晶粒尺寸的粉末的每种的合金，细粉和烧结体的组成。 通过了解每个阶段的组成，可以了解破碎过程之前和之后的组成变化。\n\n  【0071】从表2可以看出，在根据本发明的合金A的情况下，细粉中的Nd浓度和Dy浓度高于其他合金B和C的Nd浓度和Dy浓度。 这表明在氢脆处理过程和使用喷射磨的研磨过程中，合金中的Nd和Dy不容易丢失。\n\n  【0072】其原因如下。 在传统的唇形铸造合金（合金B）和铸锭合金（合金C）中，轻稀土元素（如Nd）为R2Fe14 它以高于化学计量比的浓度存在于晶界，但在主相晶粒中，以R2Fe14B型晶体的化学计量比确定的值存在。  .. 另一方面，Dy等重稀土元素广泛分布在晶界相和主相中，尤其是在合金B中。 另外，由于稀土元素的浓度高并且晶界部分扩展并且容易从该部分破裂，因此在氢脆化和微粉碎过程中产生氢脆化。  m以下）是从晶界导出的，含有大量的N d和D y。 此外，在该示例中，当通过喷射式粉碎机回收粉末时，没有除去超细粉末，结果，Nd和Dy容易损失。\n\n  【0073】另一方面，当使用合金A时，由于稀土金属晶格相分散在相对粗大的主相晶粒内部，因此它存在于柱状晶体之间。\n\n 晶界相（R_rhhh相）相对较小。 此外，重稀土元素很少出现在晶界，而是集中在主相中。 基于这些事实，在合金A中，在氢脆处理和喷射磨的研磨工艺中，超细粉末的量少，并且NdJDy以超细粉末中包含的形式损失。 可以认为运动速度会相对降低。 \n\n【0074】接下来，表3示出了通过使用上述合金A至C的粉末生产的烧结磁体的磁性能。\n\n  【0075】（表3）\n\n  【0076】A\n\n  【0077】口m。粒径烧结温度密度Br HcB\n\n  【0078】（jUm）（°C）（Mg / m3）（T）（kA / m）\n\n  【0079】A1 3.1 1040 7.4 1.17 895 2300 261\n\n  【0080】A2 3.1 1050 7.5 1.18 903 2370 266 3\n\n  【0081】A3 3.1 1060 7.6 1.20 918 2340 275\n\n  【0082】A4 3.6 1040 7.2 1.15 888 2110 255\n\n  【0083】A5 3.6 1060 7.5 1.19 919 2290 274 X\n\n  【0084】A6 3.6 1080 7.6 1.21 935 2320 283\n\n  【0085】B1 2.8 1040 7.5 1.15 875 2240 253\n\n  【0086】B2 2.8 1050 7.6 1.17 890 2230 262\n\n  【0087】B3 3.4 1040 7.5 1.12\'845 2180 237\n\n  【0088】B4 3.4 1050 7.6 1.14 860 2180 245\n\n  【0089】C1 3.2 1060 7.3 1.14 872 1970 249\n\n  【0090】C2 3.2 1080 7.6 1.19 911 1980 271\n\n  【0091】C3 3.6 1070 7.2 1.13 873 1820 247\n\n  【0092】C4 3.6 1090 7.5 1.17 903 1840 264\n\n 在表3中，A 1至A 6是由合金A的粉末制成的烧结磁体，并且合金粉末的平均粒径和烧结温度不同。  B 1至B 4是由合金B粉末制成的烧结磁体，而C 1至C 4是由合金C粉末制成的烧结磁体。\n\n  【0093】从表3可以看出，由合金A制成的烧结磁体和由合金C制成的烧结磁体具有较低的烧结温度和较高的密度。 还可以看出，表现出优异的磁体特性。 这意味着合金A的粉末比合金C的粉末烧结和冲洗的次数更多。\n\n  【0094】即使合金A粉末的平均粒径大于合金B粉末的平均粒径，由合金A粉末制成的烧结磁铁也由合金B粉末制成。 然而，它具有比烧结磁体更高的剩余磁通密度B r。 这是因为合金A的主相尺寸比合金B的主相尺寸大，因此即使合金A的粉末粒径较大，粉末的磁各向异性也较高，并且烧结磁铁 这是因为提高了磁取向度。\n\n  【0095】评价了烧结磁体A 6和烧结磁体B 2的磁化特性。 图4是示出磁化特性的曲线图，其中，水平轴表示施加到烧结磁体的磁场的强度，垂直轴表示磁化率。 从图4可以看出，与烧结磁体B 2相比，烧结磁体A 6的磁化特性得到了改善。 这可能是因为合金A中主相的尺寸大于合金B中主相的尺寸，并且结构均匀，从而使其磁化程度更高。\n\n 接下来，对于主相和整个烧结磁体，测量上述烧结磁体中包含的稀土元素的原子比。\n\n  【0096】烧结磁体A 3，B 1和C 2的测量结果分别示于表4，表5和表6中。 各表中的数值是主相或整个烧结磁体中所含的全部稀土元素中的Nd，Pr和Dy的原子比（以下简称为``比率\'\'）。  ）。\n\n  【0097】（表4）\n\n  【0098】如从以上表4，表5和表6中可以看出，在根据合金A的烧结磁体中，主相中的D y比率最高。 如表4所示\n\n 结果，烧结磁体整体中的D y的比例为3 1.0，而仅包含在主相中的D y的比例为3 2.5，比3 1.0中的比例小。 高出4％以上。 这意味着主相中的Dy浓度高于晶界相中的Dy浓度，并且Dy集中在主相中。 对于合金B，无法从表5中读取这种现象。 产生这种差异的原因是，当通过带坯连铸法生产合金B时，熔融合金的冷却速率太高，使得D y在宽范围内均匀分布，而没有区分主相和晶界相。 另一方面，在合金A的制造过程中，熔融金属的冷却速度比较慢，并且D y可以扩散到主相中并且稳定地存在于主相中。\n\n  【0099】在本发明的优选实施方式中，主相中的D y和/或T b的比率是整个合金或烧结磁体中的D y和Z或T b的比率。 它的大小是1.03倍。 从有效地使用D y和Noma T b改善矫顽力的观点来看，主相中D y与Z或T b的比率取决于整个合金或烧结磁体中的D y。 和/或更优选Tb的比率为1.05倍以上。 图5和图6示出了根据本发明的用于稀土-铁-铁-硼磁体的凝固合金的极化显微镜照片。 图5示出了在与冷却构件接触的表面附近的组织截面，图6示出了在厚度方向上的中心处的组织截面。 各图的上部表示冷却面，下部表示冷却面（自由面）侧。 从图中可以看出，它距离接触面约100 m。\n\n 在直至接触区域约100m的内侧区域（第二结构层）中形成有直至到达的区域均具有微细的晶体结构（第一结构层）的大型柱状晶体。  .. 另一方面，在自由表面附近，部分观察到精细结构，但是大多数是粗晶体。 合金渣块的厚度为5至8mm，并且大多数由粗大的第二柱状晶体结构层组成。 根据位置的不同，第一组织层和第二组织层之间的边界具有清晰的部分和不清楚的部分。\n\n  【0100】比较具有不同稀土含量的合金样品的织构，发现稀土元素浓度越高，晶体尺寸越小。\n\n  【0101】观察粗晶粒的组成图像证实富稀土相分散。 随着凝固合金中稀土含量的增加，更多地观察到分散在粗晶粒中的富稀土相。 此外，未观察到α-Fe相。\n\n  【0102】将这样的合金粉碎粉碎后，优选将F S S S的平均粒径控制在3.0m以上且5.0im以下的范围内。 通过粉碎合金以获得比以前更大的平均晶粒尺寸，可以增加烧结磁体的剩余磁通密度B”并降低其中所含的氧浓度。 工业可用性\n\n  【0103】根据本发明，D y包含在主相中，该主相的尺寸大于淬火合金的尺寸。\n\n Yu T b被集中并且矫顽力被有效地增加。 另外，固化合金中包含的主相的尺寸较大，并且不产生Fe，并且提高了粉末的烧结性。 因此，烧结磁体的制造成本大大降低。');
INSERT INTO `os_patent_instruction_text` VALUES (12981, 22810, '【0001】\n\n【発明の属する技術分野】\n\nこの発明は磁界発生装置の製造方法に関し、より特定的にはMRI用磁界発生装置の製造方法に関する。\n\n【0002】\n\n【従来の技術】\n\n従来、MRI用の磁界発生装置は、出荷前に予め磁界強度および磁界均一性が十分に調整された上で、コンテナ等で設置場所まで輸送される。\n\n【0003】\n\n【発明が解決しようとする課題】\n\nしかし、このような工夫にも拘わらず現地に到着した時点で磁界強度が低下しあるいは磁界の均一性が基準値を超えて悪化し、磁界発生装置を再調整しなければならない場合があった。\n\n特に、漏洩磁束防止用磁石を用いて漏洩磁束を少なくするとともに主磁石から発生した\n\n磁束を中心部分に集中させる磁界発生装置においてその傾向が顕著である。また、コンテナ梱包されて輸出される場合や、撮像スピードを向上させるために最近多く使用されている磁界強度の大きい(中心磁界強度:0.25T以上)装置においてもその傾向が顕著である。\n\nそれゆえにこの発明の主たる目的は、輸送後における磁界強度の低下および磁界均一性の悪化を抑制できる、磁界発生装置の製造方法を提供することである。\n\n【0004】\n\n【課題を解決するための手段】\n\n【0007】\n\n上述の目的を達成するために、請求項1に記載の磁界発生装置の製造方法は、R-Fe-B系磁石(Rはイットリウム(Y)を含む希土類元素、Feは鉄、Bはホウ素)を含む磁界発生装置を組み立てる第1工程、および組み立てられた磁界発生装置全体を40℃以上70℃以下で加温する第2工程を備える。\n\n【0016】\n\n請求項1に記載の磁界発生装置の製造方法では、着磁率が99.9%をこえる磁石を使用して磁界発生装置を組み立てた後に磁界発生装置全体を加温することによって、磁界発生装置に含まれる磁石を予め減磁し着磁率を抑えておく。これによって、たとえば温度上昇等の環境要因の変化があっても磁界発生装置によって発生する磁界が長時間にわたって安定し、磁界発生装置の輸送後における磁界強度の低下および磁界均一度の悪化を抑制でき、磁界発生装置は設置場所に到着した時点で高い磁界精度を保つことができる。\n\nなお、この明細書において「着磁率」とは常温(25℃)における着磁率をいう。\n\n【0020】\n\n【発明の実施の形態】\n\n以下、図面を参照してこの発明の実施形態について説明する。\n\n図1および図2を参照して、この発明の一実施形態のMRI用磁界発生装置10は、オープンタイプのMRI用磁界発生装置であり、空隙を形成して対向配置される一対の磁極ユニット11aおよび11bを含む。\n\n【0021】\n\n磁極ユニット11aおよび11bは、それぞれ板状継鉄12aおよび12bを含む。一対の板状継鉄12aおよび12bのそれぞれの対向面側には永久磁石群14aおよび14bが配置され、永久磁石群14aおよび14bのそれぞれの対向面側には磁極板16aおよび16bが固着される。\n\n【0022】\n\n永久磁石群14aおよび14bは、図3からわかるように、直方体状の複数の永久磁石18を含む。永久磁石18には、たとえばNEOMAX-47(住友特殊金属株式会社製)等のCoおよび/またはDyが実質的に含まれていない高磁束密度タイプのR-Fe-B系磁石が用いられ、たとえば常温における着磁率は80%以上99.9%以下に設定される。一例として、永久磁石18は、着磁率100%のときの磁束密度が0.3824Tの磁石であれば、磁束密度が0.3820Tとなるよう着磁される。永久磁石18は図示しない磁石単体を組み立てることによって得られる。\n\n【0023】\n\n磁極板16aは、永久磁石群14a上に配置されるたとえば鉄からなる円板状のベースプレート20を含む。ベースプレート20上には、うず電流の発生を防止するための珪素鋼板22が形成される。珪素鋼板22は、ベースプレート20上に接着剤で固定される。ベースプレート20の周縁部には、たとえば鉄からなり周縁部の磁界強度を上げ、均一磁界を得るための環状突起24が形成される。環状突起24は複数の環状突起片26を含み、各環状突起片26を珪素鋼板22の周縁部に固定することによって環状突起24が形成される。\n\n【0024】\n\n各環状突起24の外側面には、漏洩磁束防止用の永久磁石28が設けられる。永久磁石2\n\n8には、NEOMAX-39SH(住友特殊金属株式会社製)等の高保磁力タイプのR-Fe-B系磁石が用いられ、たとえば常温における着磁率は80%以上99.9%以下に設定される。一例として、永久磁石28は、着磁率100%のときの磁束密度が0.3824Tの磁石であれば、磁束密度が0.3820Tとなるよう着磁される。永久磁石28は図示しない磁石単体を組み立てることによって得られる。\n\n【0025】\n\n永久磁石28によって磁束を磁極板16a、16b間に誘導し漏れ磁束を少なくできる。永久磁石28の底部から磁束が漏洩しないように、永久磁石28の底部が永久磁石群14aに略当接(5mm以下に近接)するまで、永久磁石28の下部が延びていることが望ましい。このように永久磁石28と永久磁石群14aとが近接する場合には減磁が発生しやすい。磁極板16bについても同様である。\n\n【0026】\n\n図2に示すように、下側の磁極板16aにおける永久磁石28の磁化方向A1は永久磁石群14aの各永久磁石18の磁化方向B1とは異なり内向きとなる。その永久磁石28の磁化角度θ1は永久磁石群14aの主面30a(水平方向)に対して永久磁石28の磁化方向A1がなす角度を示す。上側の磁極板16bにおける永久磁石28の磁化方向A2は永久磁石群14bの各永久磁石18の磁化方向B2とは異なり外向きとなる。その永久磁石28の磁化角度θ2は永久磁石群14bの主面30b(水平方向)に対して永久磁石28の磁化方向A2がなす角度を示す。\n\n【0027】\n\nまた、板状継鉄12aおよび12bには、それぞれ複数の貫通孔32aおよび32bが形成され、永久磁石群14aおよび14bには、それぞれ貫通孔32aおよび32bに対応する位置に貫通孔34aおよび34bが形成される。さらに、磁極板16aおよび16bの各ベースプレート20には、それぞれ貫通孔34aおよび34bに対応する位置にねじ孔36aおよび36bが形成される。\n\n【0028】\n\nそして、磁極板固定用の固定ボルト38aが、貫通孔32aおよび34aに挿通され、すなわち板状継鉄12aおよび永久磁石群14aを貫通して、ねじ孔36aに螺入されることによって、磁極板16aが永久磁石群14aの主面に固定される。同様に、磁極板固定用の固定ボルト38bが、貫通孔32bおよび34bに挿通され、すなわち板状継鉄12bおよび永久磁石群14bを貫通して、ねじ孔36bに螺入されることによって、磁極板16bが永久磁石群14bの主面に固定される。\n\n【0029】\n\n板状継鉄12aおよび12bは一枚の板状の支持継鉄40によって磁気的に結合される。すなわち、支持継鉄40の下端面に板状継鉄12aの一端縁側上面が、支持継鉄40の上端面が板状継鉄12bの一端縁側下面にそれぞれ位置するように、支持継鉄40が板状継鉄12aおよび12bに接続される。したがって、板状継鉄12aおよび12bと支持継鉄40とは、その接続部が略90度の角度を有し側面視コ字状になるように接続される。\n\n【0030】\n\n図1を参照して、板状継鉄12aと支持継鉄40との接続部内面側のうち永久磁石群14aから最も遠い位置(この実施の形態では板状継鉄12aと支持継鉄40との接続部内面側の両端)に、それぞれ補強部材42が形成される。同様に、板状継鉄12bと支持継鉄40との接続部内面側のうち永久磁石群14bから最も遠い位置(この実施の形態では板状継鉄12bと支持継鉄40との接続部内面側の両端)に、それぞれ補強部材42が形成される。したがって、補強部材42によって、板状継鉄12aと支持継鉄40とが、板状継鉄12bと支持継鉄40とがそれぞれより強く固定される。\n\n【0031】\n\nまた、板状継鉄12aの下面には、4つの脚部44が取り付けられる。\n\nこのような磁界発生装置10では、均一磁界空間F(図2参照)においてたとえば0.25T以上の磁界強度が要求される。\n\n【0032】\n\nついで、磁界発生装置10の製造方法について説明する。\n\nなお、主磁石である永久磁石18および漏洩磁束防止用磁石である永久磁石28は、たとえば図4に示すような着磁装置50を用いて着磁あるいは減磁される。着磁装置50は着磁コイル52を含み、載置台54上に配置された永久磁石18または28が着磁コイル52内に挿入される。着磁コイル52には切り替えスイッチ56を介して着磁電源58が接続される。したがって、着磁装置50は、切り替えスイッチ56の動作によって着磁と減磁とを切り替えることができる。\n\n【0033】\n\nまた、永久磁石18および28は、たとえば図5に示す加温装置60を用いて加温される。加温装置60は、加温槽62を含み、加温槽62内の上部および下部にはそれぞれヒータ64が設けられる。ヒータ64は温度制御装置66によって制御される。また、永久磁石18および28は加温槽62の入口から出口までコンベア68によって搬送される。永久磁石18(28)は加温槽62内で所定温度まで昇温される。\n\n【0034】\n\n(製造方法1)\n\n磁界発生装置10全体を加温する場合について説明する。\n\nまず、磁界発生装置10全体を組み立てる。このとき、永久磁石18および28はたとえば図4に示す着磁装置50を用いて99.9%をこえる着磁率で着磁されている。ここで、「着磁率が99.9%をこえる着磁」とは、磁化が略飽和した状態をいい、通常、磁石の保磁力の3倍以上の磁界を印加したときにこの状態になる。\n\n【0035】\n\nそして、磁界発生装置10を収容できる部屋をヒータによって全体が均一の温度になるように暖め、その部屋に磁界発生装置10を収容して加温し減磁する。磁界発生装置10はたとえば40℃以上70℃以下の所望の温度に加温される。この温度範囲であれば、永久磁石18や28の常温における着磁率を80%以上99.9%以下に設定でき、所望の着磁率に応じて温度が設定される。その後、最終磁界調整を行う。\n\n【0036】\n\nこの製造方法では、磁界発生装置10全体を組み立ててから加温処理して永久磁石18,28の着磁率を80%以上99.9%以下に抑えることによって、その後における経時的なあるいは温度上昇による減磁を少なくでき、磁界発生装置10の輸送後における磁界強度の低下および磁界均一度の悪化を抑制できる。\n\n【0037】\n\n特に、漏洩磁束防止用の永久磁石28は主磁石である永久磁石18を減磁させやすいが、この方法によれば、永久磁石18および28を含む磁界発生装置10を加温して永久磁石18および28を減磁した後に最終磁界調整するので、その後における磁界均一度の劣化が少なく、漏洩磁束防止用の永久磁石28による影響をも抑制できる。\n\n【0038】\n\nしたがって、磁界発生装置10は搬送中に高い温度になったとしても設置場所に到着した時点で高い磁界均一度を保つことができる。\n\nなお、磁界発生装置10を加温するには、板状継鉄12aおよび12b等にヒータを埋め込んでおき、これによって磁界発生装置10を内部から昇温させてもよい。この場合には、磁界発生装置10全体をスポンジ等の断熱材で覆うことが好ましい。\n\n【0039】\n\n(製造方法2)\n\n磁極ユニット11aを加温する場合について説明する。\n\nまず、磁極ユニット11aを組み立てる。このとき、永久磁石18および28はたとえば図4に示す着磁装置50を用いて99.9%をこえる着磁率で着磁されている。\n\n【0040】\n\nそして、磁極ユニット11aを収容できる部屋をヒータによって全体が均一になるように\n\n暖め、その部屋に磁極ユニット11aを入れて加温し減磁する。磁極ユニット11aは、先の製造方法1と同様に所望の着磁率(80%以上99.9%以下から選択)に応じて、たとえば40℃以上70℃以下の温度に加温される。磁極ユニット11bについても同様に処理する。\n\nその後、磁極ユニット11a,11bを支持継鉄40に固定して磁界発生装置10を得た後、工場出荷前に最終的に磁界均一度の調整を行う。\n\n【0041】\n\nこの製造方法では、組み立てられた磁極ユニット11a,11bを加温処理することによって、磁極ユニット11a,11bを用いた磁界発生装置の輸送後における磁界強度の低下および磁界均一度の悪化を抑制できる。特に、漏洩磁束防止用の永久磁石28は主磁石である永久磁石18に影響を与えやすいが、この方法によれば、永久磁石18および28を含む磁極ユニットを加温して永久磁石18および28を減磁した後に最終磁界調整するので、その後における磁界均一度の劣化が少なく、漏洩磁束防止用の永久磁石28による影響をも抑制できる。また、磁界発生装置10全体を組み立ててから加温する場合と比べて加温スペースが狭くてもよい。\n\n【0042】\n\n(製造方法3)\n\n永久磁石18を組み立て、昇温したあとで着磁する場合について説明する。\n\nこの場合、永久磁石18を組み立てた後、板状継鉄12a,12bに接着する前に以下の工程を行う。\n\n【0043】\n\nまず、永久磁石18をたとえば図5に示す加温装置60の加温槽62内に入れ、永久磁石18全体が均一にたとえば60℃になるまで加温する。なお、永久磁石18は、たとえば40℃以上70℃以下の所望の温度で加温され得る。加温された永久磁石18を加温槽62から取りだし、たとえば図4に示す着磁装置50で永久磁石18に対して瞬間的に高い磁界(3T以上)を印加し永久磁石18を80%以上99.9%以下の着磁率で着磁する。高温時には低温時に比べて着磁率が低下するので、永久磁石18を高温にした状態で着磁することは、結果的に、永久磁石18を着磁後に熱減磁する(後述の製造方法5参照)のと同様になる。\n\n永久磁石28についても同様に処理される。\n\n【0044】\n\nその後、永久磁石18および28を板状継鉄12a,12bに固定し、磁界発生装置10を組み立てる。\n\nこの製造方法によって得られた永久磁石18および28を用いた磁界発生装置10では、輸送後における磁界強度の低下および磁界均一度の悪化を抑制できる。また、磁界発生装置10全体や磁極ユニット11a,11bを加温する場合より、加温スペースが狭くてもよく、小型の加温装置60を用いることができる。\n\nなお、永久磁石は一旦着磁すると磁力が働き吸引力や反発力が作用するので、加温した永久磁石を板状継鉄12a,12bに固定する分だけ順次着磁して使用することが、安全面から好ましい。\n\n【0045】\n\n(製造方法4)\n\n永久磁石18を組み立て、着磁したあとで逆磁界を印加して減磁する場合について説明する。\n\nこの場合、永久磁石18を組み立てた後、板状継鉄12a,12bに接着する前に以下の工程を行う。\n\n【0046】\n\nまず、永久磁石18に対して瞬間的に高い磁界(3T以上)を印加し99.9%をこえる着磁率で着磁した後、着磁された永久磁石18に対して逆磁界(0.01T〜2T)を印加して減磁させ、着磁率を80%以上99.9%以下に抑える。永久磁石18の着磁およ\n\nび減磁は、たとえば図4に示す着磁装置50を用いて行われる。\n\n永久磁石28についても同様に処理される。\n\n【0047】\n\nその後、永久磁石18および28を板状継鉄12a,12bに固定し、磁界発生装置10を組み立てる。\n\nこの製造方法によって得られた永久磁石18および28を用いた磁界発生装置10では、輸送後における磁界強度の低下および磁界均一度の悪化を抑制できる。また、この方法によれば、加温による減磁ではないので、時間が短くて済み、作業効率がよい。\n\n【0048】\n\n(製造方法5)\n\n永久磁石18を組み立て、着磁したあとで熱減磁する場合について説明する。\n\nこの場合、永久磁石18を組み立てた後、板状継鉄12a,12bに接着する前に以下の工程を行う。\n\n【0049】\n\nまず、たとえば図4に示す着磁装置50を用いて永久磁石18に対して瞬間的に高い磁界(3T以上)を印加して99.9%をこえる着磁率で着磁する。着磁された永久磁石18をヒータが設置された炉内(40℃〜70℃)内に収容して熱減磁させ、着磁率を80%以上99.9%以下に抑える。\n\n永久磁石28についても同様に処理される。\n\n【0050】\n\n永久磁石18および28を板状継鉄12a,12bに固定し、磁界発生装置10を組み立てる。\n\nこの製造方法によって得られた永久磁石18および28を用いた磁界発生装置10では、輸送後における磁界強度の低下および磁界均一度の悪化を抑制できる。\n\n【0051】\n\nなお、上述の製造方法以外の方法としては、永久磁石を本来の着磁方向とは逆方向にわずかに着磁した後に本着磁し所望の着磁率を得るようにしてもよい。この場合には、逆方向の着磁率が大きいほどその後の正方向の着磁磁界を大きくしなければならない。\n\nまた、減磁の方法としては、磁界発生装置10全体あるいは磁極ユニット11a,11b全体に対して、逆磁界減磁を施すようにしてもよい。\n\n【0052】\n\n因みに、図6を参照して、永久磁石に関する一実験例について説明する。\n\nここでは、永久磁石としてNEOMAX-47を用い、永久磁石を加温処理(100%着磁した後50℃で24時間維持)した場合と加温処理しない場合とについて、磁界強度の経時変化を比較した。\n\n【0053】\n\n加温処理した永久磁石の着磁率は99%、加温処理しない永久磁石の着磁率は100%に設定された。そして、実験中は、永久磁石には逆磁界なしで温度が32℃に保たれた。\n\n図6からわかるように、加温処理した場合は加温処理しない場合より磁界強度の変化率を大幅に小さくできる。\n\n【0054】\n\nつぎに、図7を参照して、他の実験例について説明する。\n\nここでは、永久磁石としてNEOMAX-47を用い、永久磁石を55℃加温処理した場合と、逆磁界減磁処理した場合と、加温処理および逆磁界減磁処理のいずれも行わない場合とについて、温度上昇に対する磁界強度の変化を比較した。\n\n【0055】\n\n「55℃加温処理」は、永久磁石を100%着磁した後55℃で2時間保ち着磁率を99.9%とした。「逆磁界減磁処理」は、永久磁石を100%着磁した後、表面磁界強度が55℃加温処理の場合と同等になるように逆磁界を上げながら減磁した。\n\n【0056】\n\n図7からわかるように、55℃加温処理した場合および逆磁界減磁処理した場合は、これらの処理をしない場合より、温度上昇に対する磁界強度変化率が大幅に小さくなる。\n\nさらに、55℃加温処理した場合は逆磁界減磁処理した場合より、温度上昇に対する磁界強度変化率が小さくなる。これは、加温処理は永久磁石全体に対して均一に作用するが、逆磁界減磁処理は逆磁界による減磁を永久磁石に対して均一に作用させにくいからである。\n\n【0057】\n\n図6および図7の結果より、加温処理あるいは逆磁界減磁処理した永久磁石を主磁石および/または漏洩磁束防止用磁石として用いれば、主磁石や漏洩磁束防止用磁石の経時変化あるいは温度上昇による減磁を抑制でき、磁界発生装置を組み立てた後の磁界強度の変化や磁界均一度の低下を抑制できる。\n\n【0058】\n\nさらに、図8に磁界発生装置の磁束分布を示す。\n\n図8(a)は、漏洩磁束防止用磁石を有する磁界発生装置の磁束分布を示し、図8(b)は、漏洩磁束防止用磁石がない磁界発生装置の磁束分布を示す。なお、図8(a)の場合の中心磁界強度は0.262T、図8(b)の場合の中心磁界強度は0.215Tであった。\n\n【0059】\n\n図8(a)と(b)とを比較してわかるように、漏洩磁束防止用磁石を用いた場合には、磁束を磁極板間に誘導する一方、漏洩磁束防止用磁石の外側の磁束が疎になる。言い換えれば、漏洩磁束防止用磁石と永久磁石群とは互いに反発しあって減磁しやすい状態にあるといえる。したがって、漏洩磁束防止用磁石を用いた磁界発生装置では、温度が上昇することによって磁界強度やその分布がより変化しやすくなる。したがって、漏洩磁束防止用磁石を用いた磁界発生装置にこの発明を適用すれば、磁界均一度の劣化を抑制でき効果的である。\n\n【0060】\n\nまた、永久磁石18や28に用いられるR-Fe-B系磁石は、フェライト磁石やSm-Co磁石に比べて比較的低温で熱減磁が発生しやすいが、上述の実施形態のようにR-Fe-B系磁石の着磁率を予め抑えておくことによって熱減磁を抑制できる。\n\n【0061】\n\n永久磁石18に高い残留磁束密度が要求される場合には上述のようにCoを実質的に含まない三元系R-Fe-B系磁石が使用される。この場合には、Coを含む永久磁石に比べて熱減磁が大きくなるので、上述の実施形態を採用する効果が大きい。さらにDyを実質的に含んでいない磁石を用いる場合にも、上述の実施形態を採用する効果は大きい。\n\n【0062】\n\nまた、磁界強度の変化や磁界均一度の悪化を抑制できるので、空隙において、均一磁界空間Fすなわち磁界強度の誤差が100ppm以内の磁界空間が必要とされる場合であっても、磁界強度の誤差を上述の範囲内に抑えやすい。\n\nさらに、たとえば空調が十分でないコンテナによって磁界発生装置が輸送される場合であっても、磁界強度の変化および磁界均一度の悪化を抑制できる。\n\nまた、均一磁界空間Fの磁界強度がたとえば0.25T以上と大きく変化量が大きくなりやすい場合であっても、磁界強度の変化を抑制できる。\n\n【0063】\n\n【発明の効果】\n\n【0064】\n\nこの発明によれば、磁界発生装置の組立後に磁界発生装置全体を加温しておくことによって、温度上昇等の環境要因の変化があっても磁界発生装置によって発生する磁界が長時間にわたって安定し、磁界発生装置の輸送後における磁界強度の低下および磁界均一度の悪化を抑制できる。\n\n【図面の簡単な説明】\n\n【図1】この発明の一実施形態を示す斜視図である。\n\n【図2】  図1の実施形態の要部を示す図解図である。\n\n【図3】この発明に用いられる永久磁石群の一例を示す斜視図である。\n\n【図4】この発明に用いられる着磁装置の一例を示す図解図である。\n\n【図5】この発明に用いられる加温装置の一例を示す図解図である。\n\n【図6】永久磁石の磁界強度の経時変化を示すグラフである。\n\n【図7】永久磁石の磁界強度の温度上昇による変化を示すグラフである。\n\n【図8】  (a)は漏洩磁束防止用磁石を有する磁界発生装置の磁束分布、(b)は漏洩磁束防止用磁石のない磁界発生装置の磁束分布を示す。\n\n【符号の説明】\n\n10      磁界発生装置\n\n11a,11b      磁極ユニット\n\n12a,12b      板状継鉄\n\n14a,14b      永久磁石群\n\n16a,16b      磁極板\n\n18,28      永久磁石\n\n24      環状突起\n\n40      支持継鉄\n\n50      着磁装置\n\n60      加温装置\n\nF        均一磁界空間', '【0001】\n\n技术领域\n\n本发明是一种磁场发生器放置用于制造方法,MRI更具体地磁场产生放置Tinsant方法。\n\n【0002】\n\n发明背景\n\n传统上,在发货前充分调节磁场强度和磁场均匀性之后,将用于MRI的磁场发生器与容器等一起被输送到安装位置。\n\n【0003】\n\n本发明要解决的问题\n\n然而,即使它到达网站上,无论这样一个装置如何,磁场强度也会降低或磁场的均匀性可能超过参考值,并且必须重新调整磁场发生器。\n\n特别地,使用磁体减少了泄漏通量,用于防止泄漏通量并从主磁体产生。\n\n在磁场发生器中,倾向是显着的,其集中在磁通量周围的集中。此外,即使在容器包装和导出或导出到图像拾取速度的情况下,趋势也是显着的。\n\n因此,本发明的主要目的可以减少运输,磁场产生后磁场均匀性的磁场强度和劣化放置它是提供一种制造方法。\n\n【0004】\n\n[解决问题的手段]\n\n【0007】\n\n实现上述目标宣称1制造磁场发生器的方法(R是含有钇(Y)的稀土元素,Fe是铁,B是硼)提供组装包括磁场发生器的磁场发生器的第一步骤,以及在40°C至70°C或更低的40℃下加热整个组装的磁场发生器的第二步骤。\n\n【0016】\n\n宣称1在制造磁场发生器中描述的磁场发生器的方法中,在使用磁场在组装99.9%的磁场发生装置之后通过加热整个磁场发生器,预先加热磁场发生器中包含的磁体。磁性抑制磁化率。结果,即使在温度上升的环境因素发生变化,也可以长时间稳定由磁场发生器产生的磁场,并且在磁场发生器的运输后,磁场强度降低,并且可以抑制磁场均匀性的劣化。,磁场发生器可以在到达安装位置时保持高磁场精度。\n\n在本说明书中,磁化率被称为常温(25℃)。\n\n【0020】\n\n发明内容\n\n在下文中,将参考附图描述本发明的实施例。\n\n参见图1和图2.如图1和2所示,根据本发明的实施例的MRI磁场发生器10是用于开放式MRI的磁场发生器,以及一对磁极单元11a以形成空隙并设置相对的磁极单元11a和11b被包含在内。\n\n【0021】\n\n极性单元11a和11b分别包括板状保持熨斗12a和12b。永磁体组14a和14b设置在一对板状卷轴12a和12b的相对侧侧,并且磁极板16a和16b固定到每个永磁体组14a和14b的面对面侧。。\n\n【0022】\n\n永磁体14a和14b包括矩形平行六面膜永磁体18,如图1所示。对于永磁体18,例如,使用高磁通密度型R-Fe-B磁体,例如NeoMax-47(由Sumitomo特殊金属有限公司制造),例如磁化强化常温下的速率设定为80%或更高,99.9%或更低。作为示例,如果磁化因子为100%,磁通密度是磁通密度为0.3824t的磁体,则磁通密度被磁化为0.3820t。永磁体18通过组装单个磁铁(未示出)而获得。\n\n【0023】\n\n磁极板16a包括例如设置在永磁体组14a上的片状基板20。硅钢板22形成在基板20上,以防止发生OTting电流。硅钢板22用粘合剂固定在基板20上。在基板20的周边部分处,形成环形突起24,用于增加周边部分的磁场强度并获得均匀的磁场。环形突起24包括多个环形突起26,并且通过将每个环形突起26固定到硅钢板22的周边部分来形成环形突起24。\n\n【0024】\n\n用于防止泄漏磁通量的永磁体28设置在每个环形突起24的外表面上。永磁体2\n\n在8中,使用例如NeoMAX-39S(Sumitomo特殊金属有限公司制造)的高磁力类型的R-Fe-B基磁铁,例如,常温下的磁化速率设定为80 %以上和99.9%或更低。作为示例,永磁体28是当磁化因子为0.3824T时涂有0.3824T的磁通密度的磁体,并且磁通密度被磁化。永磁体28通过组装单个磁铁(未示出)而获得。\n\n【0025】\n\n永磁体28引起磁极板16a和16b之间的磁通量并降低泄漏磁通。期望永磁体28的下部延伸到永磁体组14a(接近5mm或更小),使得永磁体28的底部不会从永磁体28的底部泄漏。如上所述,当永磁体28和永磁体组14a闭合时,可能发生退磁。这同样适用于磁极板16b。\n\n【0026】\n\n如图1所示。如图2所示,下磁极板16a中的永磁体28的磁化方向a1与永磁体组14a的每个永磁体18的磁化方向b1不同。永磁体28的磁化角θ1表示由永磁体28的相对于永磁体组14a(水平方向)的永磁体28的磁化方向a1形成的角度。上磁极板16b中的永磁体28的磁化方向a2从永磁体组14b的每个永磁体18的磁化方向b2向外向外向外向外向外。永磁体28的磁化角θ2表示由永磁体28的磁化方向A2相对于永磁体组14b的主表面30b(水平方向)形成的角度。\n\n【0027】\n\n另外,通过孔32a和32b形成在板状红发铁磁铁12a和12b中,并且永磁体组14a和14b分别对应于通过孔32a和32b形成。此外,螺孔36a和36b形成在极板16a和16b的每个基板20处,分别在与通孔34a和34b对应的位置处形成。\n\n【0028】\n\n然后,通过通孔32a和34a插入用于固定磁极板的固定螺栓38a,即拧入螺钉孔36a的极板,该杆板拧入板状卷轴12a和永磁体组14A。16A固定到永磁体组14A的主表面。类似地,用于将极板固定的固定螺栓38b插入到通孔32b和34b中,即拧入拧入螺孔36b中的板状重新铁12b和永磁体组14b,板16b是固定到永磁组14b的主表面。\n\n【0029】\n\n板状红发熨斗12a和12b通过片状支撑磁轭40磁耦合。也就是说,支撑轭40的上端表面是板状卷轴12a的一个端部边缘侧的上表面,使得支撑轭40的上端表面定位在板的下表面上 - 像卷轴12b。连接到板状保持熨斗12a和12b。因此,板状萝卜12a和12b和支撑轭40连接到侧视图,使得连接部分的角度大约90度并且变成侧视图。\n\n【0030】\n\n参考图1.如图1所示,板状卷轴12a和支撑轭40之间的连接部分的连接部分的位置是距离永磁体组14a的最远(在本实施例中,板状卷轴12a和支撑RAID 40加强构件42在连接部分的内表面侧的两端形成在两端。类似地,从永磁体组14b距离连接部分的连接部分最远的位置与板状卷轴12b和支撑轭40之间的连接部分(在板状卷轴12b的连接部分的连接部分的实施例中,以及支撑件在该实施例中的轭40)加强构件42形成在侧面的两端)。因此,通过加强构件42,板状红氧化铁12a和支撑轭40固定到板状的可重电12b,并且架子轭40更强烈地固定在板状的可重杆12b上。\n\n【0031】\n\n此外,四个腿44附接到板状螺纹12a的下表面。\n\n在这种磁场发生器10中,在均匀磁场空间F(参见图2)中需要例如0.25t或更大的磁场强度。\n\n【0032】\n\n接下来,将描述制造磁场发生器10的方法。\n\n作为主磁体18的永磁体28和用于防止泄漏磁通量的磁体例如例如使用如图2所示的磁化装置50磁化或磁磁化。磁化装置50包括磁化线圈52,并且设置在安装台54上的永磁体18或28插入磁化线圈52中。磁化电源58经由开关开关56连接到磁化线圈52。因此,磁化装置50可以通过切换开关56的操作在磁化和去磁之间切换。\n\n【0033】\n\n而且,永磁体18和28例如使用图1所示的加热装置60加热。加热装置60包括加热罐62,并且分别设置在加热箱62中的上部和下部的加热器64。加热器64由温度控制装置66控制。而且,永磁体18和28由输送器68从加热箱62的出口的入口输送。永磁体18(28)在加热罐62中升高到预定温度。\n\n【0034】\n\n(制造方法1)\n\n将描述整个磁场发生器10的情况。\n\n首先,组装整个磁场发生器10。此时,永磁体18和28被磁化因子磁化,磁化因子使用图1所示的磁化装置50超过99.9%。这里,“磁化因子的99.9%的磁化为”磁化因子“是指磁化强度基本饱和的状态,并且通常在施加磁体的矫顽力的三次或更多个磁场时。\n\n【0035】\n\n然后,可以容纳磁场发生器10的整个房间被加热器加热,并且磁场发生器10被容纳并加热到房间。磁场发生器10例如在40℃或更高和70℃或更低的期望温度下加热。在该温度范围内,永磁体18和28的常温下的磁化速率可以设定为80%或更高,99.9%或更小,并且根据所需的磁化速率设定温度。此后,执行最终磁场调整。\n\n【0036】\n\n在该制造方法中,通过抑制永磁体18和28的磁化速率在组装整个磁场发生器10之后通过抑制永磁体18和28的磁化速率而导致的磁性磁化或温度升高,并且可以抑制在磁场发生器10的运输之后抑制磁场强度的降低和磁场均匀性的劣化。\n\n【0037】\n\n特别地,尽管用于防止泄漏磁通的永磁体28容易受到作为主磁体的永磁体18,但是该方法,包括永磁体18和28的磁场发生器10被加热,并且永磁体18和永磁体18由于在去磁后调节最终磁场,并且可以减少磁场均匀性的劣化程度,并且还可以抑制用于防止漏磁通的永磁体28的影响。\n\n【0038】\n\n因此,即使在运输过程中变得高温,磁场发生器10也可以保持高磁场均匀。\n\n为了加热磁场发生器10,加热器可以嵌入板状卷轴12a和12b等中,由此可以从内部消除磁场发生器10。在这种情况下,优选的是覆盖整个磁场发生器10,其具有诸如海绵的隔热材料。\n\n【0039】\n\n(制造方法2)\n\n将描述磁极单元11a被加热的情况。\n\n首先,组装磁极单元11a。此时,永磁体18和28被磁化因子磁化,磁化因子使用图1所示的磁化装置50超过99.9%。\n\n【0040】\n\n然后,使得整个加热器可以由加热器均匀以容纳磁极单元11a\n\n温暖,将磁极单元11a放入房间内,温暖和退磁。根据期望的磁化因子(选自80%以上,99.9%或更低),将磁极单元11a加热至40℃以上或更低70℃以下的温度。 。磁极单元11b也是处理的。\n\n此后,磁场发生器11a和11b固定到支撑磁场40以获得磁场发生器10,然后在工厂发货之前最终调整磁场均匀性。\n\n【0041】\n\n在该制造方法中,通过加热组装的磁极单元11a和11b,可以使用磁场单元11a和11b在运输磁场发生器之后抑制磁场强度和磁场均匀的劣化。特别地,尽管用于防止泄漏通量的永磁体28容易受到作为主磁体的永磁体18的永磁体18的影响,但是该方法加热包括永磁体18和28的磁极单元,并加热磁极单元18和28在去磁最终磁场后调整最终磁场,磁场均匀性的劣化程度小,并且可以抑制防止漏磁通的永磁体28的影响。另外,与组装和加热整个磁场发生器10的情况相比,加热空间可以是窄的。\n\n【0042】\n\n(制造方法3)\n\n将描述组装永磁体18并将其加热到温度的情况。\n\n在这种情况下,在组装永磁体18之后,在粘附到板状萝卜12a和12b之前进行以下步骤。\n\n【0043】\n\n首先,将永磁体18放置在图1所示的加热装置60的加热罐62中。如图5所示,整个永磁体18加热直到达到60℃。永磁体18可以在例如40℃或更高且70℃或更低的所需温度下温热。从加热罐62移除加热的永磁体18,例如,用图1所示的磁化装置50施加到永磁体18上的瞬时高磁场(3T或更多)。4,永磁体18磁化率为99.9%或更低的80%或更多的着色。在高温时,与低温相比,磁化速率降低,从而在高温下与永磁体18进行磁化,结果是永磁体18是磁敏敏的(参见稍后描述的制造方法5)它变得相似。\n\n类似地处理永磁体28。\n\n【0044】\n\n此后,永磁体18和28固定到板状保持熨斗12a,12b,并且磁场发生器10被组装。\n\n在磁场产生装置10中,使用通过该制造方法获得的永磁体18和28,可以在运输和恶化磁场均匀性之后抑制磁场强度的降低。此外,作为整个磁场发生器10和磁极单元11a和11b被加热的情况,加热空间可以是窄的,并且可以使用小加热装置60。\n\n另外,由于永磁体被磁化,所以磁力作用和抗力和排斥力操作,使得加热的永磁体被顺序地磁化并由用于将温热的永磁体固定到板状抑制的部分中使用图12A和12B。从安全性是优选的。\n\n【0045】\n\n(制造方法4)\n\n将描述通过组装和磁化永磁体18来施加反向磁场的情况。\n\n在这种情况下,在组装永磁体18之后,在粘附到板状萝卜12a和12b之前进行以下步骤。\n\n【0046】\n\n首先,在磁场(3T或更多)上瞬时施加到永磁体18并且用超过99.9%的磁化速率磁化,磁化永磁体18失真的反向磁场(0.01t至2t)进行施加磁力,磁化速率抑制至80%以上,99.9%或更低。永磁体18的磁化\n\n使用例如图1所示的磁化装置50来执行去磁化。\n\n类似地处理永磁体28。\n\n【0047】\n\n此后,永磁体18和28固定到板状保持熨斗12a,12b,并且磁场发生器10被组装。\n\n在磁场产生装置10中,使用通过该制造方法获得的永磁体18和28,可以在运输和恶化磁场均匀性之后抑制磁场强度的降低。此外,根据该方法,由于由于加热而不是去磁,所以时间短,工作效率是好的。\n\n【0048】\n\n(制造方法5)\n\n将描述组装和磁化永磁体18之后的热退磁的情况。\n\n在这种情况下,在组装永磁体18之后,在粘附到板状萝卜12a和12b之前进行以下步骤。\n\n【0049】\n\n首先,例如,使用图1所示的磁化装置50将磁场(3t或更多)高磁场施加到永磁体18。磁化的永磁体18容纳在炉子(40℃至70℃)中,其中安装加热器,磁性磁性磁性血糖缩放并抑制磁化率至80%或更高,99.9%或更低。\n\n类似地处理永磁体28。\n\n【0050】\n\n永磁体18和28固定到板状要求12a,12b,并且磁场发生器10被组装。\n\n在磁场产生装置10中,使用通过该制造方法获得的永磁体18和28,可以在运输和恶化磁场均匀性之后抑制磁场强度的降低。\n\n【0051】\n\n另外,作为上述制造方法之外的方法,永磁体可以从原始磁化方向上的反向略微磁化,并且可以获得连接磁化的磁化速率。在这种情况下,沿相反方向的磁化速率越大,向前方向磁化磁场越大。\n\n此外,作为退磁的方法,可以在整个磁场发生器10或整个磁极单元11a和11b上执行反向磁场退磁。\n\n【0052】\n\n顺便提及,参考图1.如图6所示,将描述用于永磁体的一个实施例。\n\n这里,使用NeoMax-47作为永磁体,将永磁体加热(在50℃下在50℃下保持24小时),并且在不加热的情况下,磁场强度的变化是比较。做了。\n\n【0053】\n\n加热的永磁体的磁化率为99%,永久性磁铁的磁化速率设定为100%。在实验期间,温度在32℃下保持不带反向磁场。\n\n从图1中可以看出。如图6所示,当执行加热时,磁场强度的变化率可以显着减少比未执行加热处理时的大量变化。\n\n【0054】\n\n接下来,将参考图1描述另一个实验例。\n\n这里,永磁体用作永磁体和永磁体在55℃下加热的情况。并且进行了对逆向磁场去磁的退磁处理的情况,加热处理和反向磁场退磁不进行治疗。比较,比较磁场强度变化以温度升高。\n\n【0055】\n\n用永磁体磁化为100%的“55℃加热处理”,磁化率在55℃下为99.9%2小时。 “分解磁处理”是100%永磁体的磁敏敏感性,然后在升高后磁场的同时脱磁,使得表面磁场强度相当于55℃的情况。\n\n【0056】\n\n从图1中可以看出。如图7所示,当在55℃下进行热处理并且执行反向磁场的去磁处理时,从壳体显着降低了相对于温度升高的磁场强度变化率未执行这些处理的位置。\n\n此外,当在55℃下进行温度处理时,随着划分的磁场消除,磁场强度变化率相对于温度上升而降低。这是因为升温过程相对于整个永磁体均匀地操作,但逆磁场退磁过程是因为由于逆磁场引起的退磁均匀地作用在永磁体上。\n\n【0057】\n\n从图1和图2的结果。如图6和7所示,如果通过去磁的去磁磁场获得的加热处理或永磁体被用作主磁体和/或用于防止漏磁通量的磁体,则时间变化或温度升高用于防止主磁体和泄漏磁通量的磁体。可以抑制磁场发生器的事实,抑制退磁,并且可以抑制磁场强度的降低和磁场均匀性的降低。\n\n【0058】\n\n此外,图。图8示出了磁场发生器的磁通量分布。\n\n图。图8A示出了具有用于防止漏磁通的磁体的磁场发生器的磁通量分布,图8B示出了磁场发生器的磁通量分布而没有用于防止漏磁通量的磁体。图8A的中央磁场强度为0.262T,图8A为0.262t。图8B是在图8(b)的情况下为0.215t。\n\n【0059】\n\n如通过与图1和图2进行比较可以理解。如图8A和8B所示,当使用用于防止漏磁通量的磁体时,磁极板之间诱导磁通,而用于防止漏磁通的磁体外的磁通量是稀疏的。换句话说,可以说,用于防止泄漏磁通量和永磁体组的磁体是令人厌恶的并且易受去磁的影响。因此,在使用用于防止漏磁通量的磁体的磁场发生器中,通过提高温度,可以容易地改变磁场强度及其分布。因此,如果本发明应用于使用用于防止漏磁通量的磁体的磁场发生器,则可以抑制磁场均匀性均匀性的劣化。\n\n【0060】\n\n此外,用于永磁体18和28的R-Fe-B基磁体在比铁氧体磁体和SM-CO磁体相对低的温度下相对较低,但是R是通过抑制抑制的热还原信号。 -FE-B磁铁的磁化率提前。\n\n【0061】\n\n如果永磁体18所需的高残留磁通密度,则使用如上所述使用基本上自由Co的三通R-Fe-B基磁体。在这种情况下,由于与包括CO的永磁体相比,热还原信号增加,所以采用上述实施例的效果大。此外,即使当使用基本上没有含量的磁体时,也具有采用上述实施例的效果。\n\n【0062】\n\n另外,由于可以抑制磁场强度的变化和磁场均匀性的劣化,即使在均匀磁场空间f内需要磁场空间,即100ppm内的磁场空间,误差需要磁场强度。易受上述范围内的影响。\n\n此外,即使磁场发生器被传送,例如,磁场发生器也由空调不足的容器传送,可以抑制磁场强度的变化和磁场均匀性的劣化。\n\n另外,即使均匀磁场空间F的磁场强度大大且变化量大而且变化量更可能增加,也可以抑制磁场强度的变化。\n\n【0063】\n\n【发明效果】\n\n【0064】\n\n根据本发明,在组装磁场发生器后加热整个磁场发生器经过即使存在升温等环境因素的变化,也可以长时间稳定由磁场发生器产生的磁场,并且可以抑制磁场强度的降低和磁场均匀性的劣化运输磁场发生器后。\n\n[简要描述;简介]\n\n【图1】图3是表示本发明的一个实施方式的透视图。\n\n【图2】图3是表示图1的实施方式的主要部分的图示图。\n\n图3.图3是表示本发明中使用的永磁体组的示例的立体图。\n\n图4.图3是表示本发明中使用的磁化装置的一例的图示。\n\n图5.图2是表示本发明中使用的加热装置的一例的图示。\n\n6.图3是表示永磁体磁场强度的时间依赖性变化的图。\n\n图7.图3是表示永磁体磁场强度的温度升高引起的变化的图。\n\n图8(a)示出了具有用于防止漏磁通的磁体的磁场发生器的磁通量分布,并且(b)示出了没有磁体的磁场发生器的磁通量分布,用于防止漏磁通量。\n\n[标志的说明]\n\n10磁场发生器\n\n11A,11B磁极单元\n\n12a,12b镜头\n\n14A,14B永磁体\n\n16A,16B极板\n\n18,28永磁铁\n\n24个环形预测\n\n40支持释放\n\n50磁性设备\n\n60个加热装置\n\nF均匀磁场空间');
INSERT INTO `os_patent_instruction_text` VALUES (12982, 22811, '【0001】\n\n【発明の属する技術分野】\n\n本発明は、希土類合金の切断方法に関し、特に、芯線に砥粒を固着させたワイヤソーを用いて希土類合金を切断する方法に関する。\n\n【0002】\n\n【従来の技術】\n\n希土類合金は、例えば、強力な磁石材料として利用されている。希土類合金を着磁することによって得られる希土類磁石は、例えば、磁気記録装置の磁気ヘッドの位置決めに用いられるボイスコイルモータ用の磁石として好適に用いられている。\n\n【0003】\n\n希土類合金材料(インゴットや焼結体を含むものとする。)を切断する方法としては、従来から、例えば回転するスライシングブレードを用いて希土類合金材料をスライスする技術が採用されている。しかしながら、スライシングブレードで切断する方法によれば、切断刃の厚さが比較的大きいため、削りしろが多くなり、希土類合金材料の歩留まりが低く、希土類合金製品(例えば希土類磁石)のコストを上昇させる要因となっている。\n\n【0004】\n\nスライシングブレードよりも削りしろが少ない切断方法として、ワイヤソーを用いた方法がある。例えば、特許文献1は、高強度の芯線の周面上に超砥粒をボンド層により固定したワイヤソー(「固定砥粒ワイヤソー」という。)を用いて、シリコン、ガラス、ネオジム、フェライト等の硬脆材料を切断できることを開示している。\n\n【0005】\n\n上述のような固定砥粒ワイヤソーを用いて、希土類合金材料から少ない削り代で所定厚さの板を多数枚同時に作製することができれば、希土類磁石の製造コストが大幅に低減され\n\nる。しかしながら、固定砥粒ワイヤソーを用いて希土類合金を量産レベルで切断したとの報告は未だに無い。\n\n【0006】\n\n本発明者が種々検討した結果から、この主な原因として、希土類合金、特に、焼結法によって製造された希土類合金(以下、「希土類焼結合金」を呼ぶ。)の機械的な性質が、シリコン等と大きく異なることが挙げられる。具体的には、希土類焼結合金は、全体として脆く、且つ、硬い主相(すなわちR2Fe14B結晶粒)と、延性的な破壊を起こす粒界相とを有するので、シリコンに代表される硬脆材料と異なり、切削され難い。すなわち、シリコン等の硬脆材料を切断する場合に比べて、切削抵抗が高く、その結果、発熱量も多い。また、希土類合金の比重は、約7.5とシリコン等の材料に比べて大きく、切削によって生成される切削屑(スラッジ)が切削部から排出され難い。\n\n【0007】\n\n従って、希土類合金を、高い加工精度で、効率良く切削するためには、切削抵抗を十分に低下させるとともに、切削時に発生する熱を効率良く放熱する、すなわち切削部を効率良く冷却する必要がある。また、切削によって生成される切削屑を効率良く排出する必要がある。\n\n【0008】\n\nそこで、潤滑性に優れた冷却液(「切削液」ともいう。)を希土類合金の切削部に十分に供給することによって、切削抵抗を低下するとともに、切削時に発生する熱を効率良く放散することができる。発明者による実験の結果、油性の冷却液を用いて、ワイヤソーを十分な量の冷却液で濡らしておけば、走行するワイヤソーによって、狭い切削部に冷却液を十分に供給することができる。\n\n【0009】\n\n【特許文献1】\n\n特開平11-198020号公報\n\n【0010】\n\n【発明が解決しようとする課題】\n\nしかしながら、油性の冷却液には、環境破壊を起こさないように廃液を処理するためにコストがかかること、および、廃液中の切削屑を分別することが困難であり、廃液や切削屑の再利用が困難であるという問題がある。これらのことを考慮すると、冷却液としては水(または水溶性の冷却液)が好ましいのであるが、水を冷却液として用いると、水は粘度(1.0mm2/s)が低いので、走行するワイヤソーに十分な量を付着させることができないので、ワイヤソーを水で濡らしても切削部に十分な量の水を供給することができない。\n\n【0011】\n\n特許文献1は、冷却液の槽からオーバーフローする冷却液中にワイヤソーを走行させることによって、固定砥粒ワイヤソーを高速(例えば2000m/min)で走行させる場合においても、冷却液をワイヤソーに確実に付着させることができることを開示している。しかしながら、本発明者の実験によると、オーバーフローしている水の中にワイヤソー(例えば、特許文献1に開示されている)を走行させながら希土類合金を切削しても、砥粒の脱落や、樹脂層の剥離、さらにひどい場合にはワイヤソーの断線が発生する。この不具合は、ワイヤソーの走行速度が例えば800m/min程度でも発生した。\n\n【0012】\n\n本発明は上記の諸点に鑑みてなされたものであり、その主な目的は、ワイヤソー装置で水を主成分とする冷却液を用いて希土類合金を切断する際のワイヤソーの寿命を長くすることにある。\n\n【0013】\n\n【課題を解決するための手段】\n\n本発明による希土類合金の切断方法は、芯線に砥粒を樹脂層によって固着させたワイヤソーを用いる希土類合金の切断方法であって、前記希土類合金が前記ワイヤソーによって切\n\n削される部分を25℃における表面張力が25mN/m〜60mN/mの範囲内にある水を主成分とする冷却液中に浸漬した状態で、前記ワイヤソーを走行させることによって前記希土類合金を切削する工程を包含し、前記ワイヤソーとして、長さ方向において互いに隣接する前記砥粒間の平均距離が前記砥粒の平均粒径の150%以上400%未満の範囲内にあり、前記砥粒が前記樹脂層の表面から突き出している部分の平均高さが前記砥粒の平均粒径の70%以下であって、且つ、前記樹脂層の前記芯線に対する偏肉率が40%以下であるワイヤソーを用いることを特徴とし、そのことによって上記目的が達成される。\n\n【0014】\n\n本発明による希土類合金の切断方法に用いられる水を主成分とする冷却液は、表面張力の代わりに動摩擦係数によって特定することもでき、前記希土類合金に対する25℃における動摩擦係数が0.1〜0.3の範囲内にある冷却液を用いることを特徴とする。\n\n【0015】\n\n前記砥粒の平均粒径Dは、20μm≦D≦60μmの関係を満足することが好ましい。\n\n【0016】\n\n前記芯線の直径は0.15mm以上0.2mm以下の範囲内にあることが好ましい。\n\n【0017】\n\n好ましい実施形態において、前記ワイヤソーを走行させる工程は、ワイヤソーを複数のローラの間で走行させる工程であって、前記複数のローラのそれぞれは、案内溝が形成された高分子層を有し、前記案内溝は、少なくとも一方の斜面が前記ローラの半径方向に対して25°以上45°未満の角度を成す一対の斜面を有し、前記ワイヤは前記一対の斜面の間を走行させられる。\n\n【0018】\n\n前記樹脂層は、フェノール樹脂、エポキシ樹脂またはポリイミド樹脂から形成されていることが好ましい。\n\n【0019】\n\n好ましい実施形態において、前記希土類合金は、R-Fe-B系希土類焼結合金であり、Nd-Fe-B系希土類焼結合金であってもよい。\n\n【0020】\n\n【発明の実施の形態】\n\n本発明の実施形態による希土類合金の切断方法は、芯線(典型的にはピアノ線)に砥粒(典型的にはダイヤモンド砥粒)を樹脂層によって固着させたワイヤソーを用い、希土類合金がワイヤソーによって切削される部分を25℃における表面張力が25mN/m〜60mN/mの範囲内にある水を主成分とする冷却液中に浸漬した状態で、ワイヤソーを走行させることによって希土類合金を切削する工程を包含し、ワイヤソーとして、長さ方向(すなわち、ワイヤソーの走行方向)において互いに隣接する砥粒間の平均距離が砥粒の平均粒径の150%以上400%未満の範囲内にあり、砥粒が樹脂層の表面から突き出している部分の平均高さが砥粒の平均粒径の70%以下であって、且つ、樹脂層の芯線に対する偏肉率が40%以下であるワイヤソーを用いる。なお、冷却液として、希土類合金に対する25℃における動摩擦係数が0.1〜0.3のものを用いてもよい。\n\n【0021】\n\n本発明の実施形態による希土類合金の切断方法において、希土類合金を固定砥粒ワイヤソーを用いて切削する工程は、25℃における表面張力が25mN/m〜60mN/m(約25dyn/cm〜約60dyn/cm)の範囲内にある冷却液に切削部が浸漬された状態で実行されるので、ワイヤソーを効率良く冷却することができる。上記の範囲内の表面張力を有する冷却液は、水に比べて、希土類合金および/またはワイヤソーに対する濡れ性(またはなじみ)が優れるので、切削部(希土類合金とワイヤソーとが互いに接触し、希土類合金が切削される部分。切削溝ともいう。)に冷却液が効率よく浸透するためと考えられる。勿論、水を主成分とする冷却液は、油性冷却液(例えば鉱油)に比べ比熱が高いので、冷却効率が高い。なお、本明細書において、「水を主成分とする冷却液」とは、全体の70重量%以上が水である冷却液をいう。\n\n【0022】\n\n本発明の希土類合金の切断方法において好適に用いられる冷却液は、上記希土類合金に対する動摩擦係数によって選別することも可能で、25℃における上記動摩擦係数が約0.1〜約0.3の範囲内にある冷却液は、上記の範囲内の表面張力を有する冷却液と同等の作用·効果を発揮し得る。表面張力が切削部に対する冷却液の浸透性を示す指標と考えられるのに対し、動摩擦係数は切削部に対して冷却液が与える潤滑性の指標と考えられる。なお、表面張力と動摩擦係数との間に、定性的な相関関係があることが知られている。\n\n【0023】\n\n冷却液の表面張力は、よく知られているデュヌイ表面張力計を用いて測定される。また、希土類合金に対する冷却液の動的摩擦係数は、日本で基礎的な試験機として多用されている増田式「四球式摩擦試験機」を用いて測定される。本明細書においては、表面張力および動摩擦係数のいずれについても、25℃における値を、冷却液を特徴付ける値として採用する。\n\n【0024】\n\nなお、以下の実施例で示す動摩擦係数は、鉄球を用いて四球式摩擦試験機で求めた値である。実施例で例示するR-Fe-B系希土類合金(RはYを含む希土類元素で、例えば、Nd2Fe14B金属間化合物を主相とする合金)は、鉄の含有量が成分元素の中で最も多いので、鉄球を用いて求めた冷却液の動摩擦係数は、良い近似で、希土類合金に対する動摩擦係数として採用することができる。このことは実験的に確かめた。希土類磁石として好適に用いられる希土類合金の組成および製造方法は、例えば、米国特許第4,770,723号および米国特許第4,792,368号に記載されている。R-Fe-B系希土類合金の典型的な組成では、RとしてNdまたはPrが主に用いられ、Feは部分的に遷移元素(例えばCo)に部分的に置換されてもよく、BはCによって置換されてもよい。\n\n【0025】\n\nまた、25℃の表面張力または動摩擦係数を用いて、本発明の切断方法で用いられる冷却液を特定したが、実際に使用する際の冷却液の温度は、25℃に限られない。但し、本発明の効果を得るためには、15℃〜35℃の範囲内に温度制御された冷却液を用いることが好ましく、20℃〜30℃の範囲内にあることがさらに好ましく、23℃〜28℃の範囲内にあることがさらに好ましい。よく知られているように、冷却液の表面張力や動摩擦係数は温度に依存するので、実際に使用する冷却液の温度が上記の温度範囲からあまり外れると、冷却液の表面張力や動摩擦係数がそれぞれ上記の数値範囲から外れた状態と良く似た状態となり、冷却効率または切削効率が低下する。\n\n【0026】\n\n上記の冷却液は、界面活性剤や、いわゆる「シンセティック(Synthetic)」と呼ばれる合成潤滑剤を水に添加することによって調製される。種類や添加量を調整することによって、所定の表面張力や動摩擦係数を得ることができる。また、水を主成分とする冷却液を用いると、比較的粘度が低いので、切削によって生成したスラッジから磁石を用いて希土類合金の切削屑を容易に分別することが可能で、冷却液を再利用することができる。また、冷却液の廃棄処理によって自然環境に悪影響を及ぼすことを防止することができる。また、スラッジ中に含まれる炭素の量を減らすことができ、スラッジから回収された切削屑を原料とする磁石の磁気特性を向上することができる。\n\n【0027】\n\nワイヤソーを高速で走行させながら切削を行うと、冷却液が発泡し、冷却効率が低下することがある。消泡剤を含む冷却液を用いることによって、冷却液の発泡による冷却効率の低下を抑制することができる。さらに、PHが8〜11の範囲内にある冷却液を用いることによって、希土類合金の腐食を抑制することができる。PHが9以上の冷却液を用いることがさらに好ましい。また、防錆剤を含む冷却液を用いることによって、希土類合金の酸化を抑制することができる。これらは、希土類合金の種類や切断条件等を考慮して、適宜調整すればよい。\n\n【0028】\n\nワイヤソーとしては、ダイヤモンド系砥粒を樹脂層で固着したものが好適に用いられる。すなわち、芯線(典型的にはピアノ線)の外周面にダイヤモンド系砥粒を樹脂を用いて固着したワイヤソーを好適に用いることができる。そのなかでも、樹脂としてフェノール樹脂、エポキシ樹脂またはポリイミド樹脂を用いることが好ましい。これらの樹脂は、ピアノ線(硬鋼線)の外周面への接着強度が高く、また後述する冷却液に対する濡れ性(浸透性)にも優れる。樹脂には必要に応じてフィラー(例えばSiCやAl2O3)を添加してもよい(例えば、特許第3078020号公報参照)。また、砥粒を樹脂層で固着したワイヤソーは、電着法を用いて製造されるワイヤソーよりも安価であり、希土類合金の切断にかかるコストを低減することができる。なお、ワイヤソーの芯線は、ピアノ線に限られず、Ni-CrやFe-Ni等の合金、WやMo等の高融点金属から形成されたもの、またはナイロン繊維などの高強度繊維を束ねたものから形成されていても良い。また、砥粒の材料はダイヤモンドに限定されず、SiC、B、C、CBN(Cubic  Boron  Nitride)等であってもよい。\n\n【0029】\n\n上記の冷却液を用いると、冷却液として水を用いる場合よりも、切削工程におけるワイヤソーの温度の異常上昇を抑制することができるので、砥粒の異常脱粒、樹脂層の剥離やワイヤソーの断線を抑制することができる。本発明の実施形態による希土類合金の切断方法においては、冷却液の選定に加えて、ワイヤソーを限定することによって、さらに長い期間に亘ってワイヤソーを使用することが可能となり、製造コストをさらに低減する。後に実験例を示して説明するように、ワイヤソーとして、長さ方向(走行方向)において互いに隣接する砥粒間の平均距離が砥粒の平均粒径Dの150%以上400%未満の範囲内にあり、砥粒が樹脂層の表面から突き出している部分の平均高さが砥粒の平均粒径Dの70%以下であって、且つ、樹脂層の芯線に対する偏肉率が40%以下であるワイヤソーを用いることによって、異常脱粒、樹脂層の剥離や断線を低減することができる。\n\n【0030】\n\n後に実験例を示して説明するように、種々検討した結果、上述のように芯線の外周に樹脂層によって固着された砥粒のワイヤソーの長さ方向における密度および砥粒が樹脂層から突き出している部分の平均高さ(突き出し率)を調節するとともに樹脂層の芯線に対する偏肉率を調整することによって、切削屑(スラッジ)の排出性を良好な範囲に保ちつつ、切削時に個々の砥粒に掛かる負荷が均一化される結果、異常脱粒、樹脂層の剥離や断線が低減されるものと推察される。\n\n【0031】\n\nここで、図1(a)および(b)を参照しながら、本発明による実施形態の切断方法に用いられるワイヤソーを特徴付ける突き出し率Prおよび偏肉率Tdの定義を説明する。\n\n【0032】\n\n図1(a)に示すように、ワイヤソー20は、芯線22の外周面に砥粒24が樹脂層26によって固着されている。砥粒24の平均粒径をDとし、砥粒24が樹脂層26から突き出ている部分の高さ(突き出し量)をPとしたとき、突き出し量Pの平均粒径Dに対する割合を突き出し率Pr(%)とする。すなわち、Pr=(P/D)×100で表される。突き出し率Prは、例えば、ワイヤソー20の断面の光学顕微鏡写真から求めることができる。\n\n【0033】\n\nワイヤソー20は、例えば特許第3078020号公報に記載されているように、エナメル法と呼ばれる方法などを用いて、砥粒を分散した樹脂(必要に応じて溶剤が混入される)を芯線の外周に塗布することによって製造される。このときに樹脂層の厚さの調整が十分になされないと、図1(b)に模式的に示したように、ワイヤソー20(芯線22)の直径を含む断面において、樹脂層26の厚さが芯線22に対して均一でなくなることがある。このような樹脂層26の厚さの偏りを定量的に評価するために、偏肉率Td(%)を以下のように定義する。\n\n【0034】\n\n芯線22の半径をRw、樹脂層26の厚さの最小値をTrl、最大値をTrhとして、偏肉率Tdを(Trh-Trl)/{(Trh+Trl)/2}とする。なお、分母の(Trh+Trl)/2は樹脂層26の平均厚さとしてもよい。偏肉率Tdは、芯線22の半径Rw、樹脂層26の厚さの最小値Trlおよび最大値Trhを実測することによって求められる。樹脂層26の厚さは、例えば、ワイヤソー20の断面の光学顕微鏡写真から求められる。勿論、理想的な樹脂層26の偏肉率は0%である。\n\n【0035】\n\nまた、上述の条件を満足するワイヤソー20は、例えば特許第3078020号公報に開示されているように、エナメル法による樹脂の塗布工程において浮きダイスを用いて樹脂層の厚さを制御することによって製造される。このようなワイヤソー20は、上記の仕様を指定すれば一般のワイヤソーの製造業者(例えば、株式会社アライドマテリアル)から供給され得る。\n\n【0036】\n\n切削しろが少ないという利点を得るためには、ワイヤソー20の外径は、0.3mm以下が好ましく、0.25mm以下であることがさらに好ましい。ワイヤソー20の外径の下限値は十分な強度が得られるように設定され、且つ、所定の大きさの砥粒を十分な強度で固着するために、0.12mm〜0.20mm、より好ましくは0.15mm〜0.20mm程度の直径の芯線22が用いられる。\n\n【0037】\n\n砥粒24の平均粒径Dは、切削効率の観点から、20μm≦D≦60μmの関係を満足することが好ましく、30μm≦D≦60μmの関係を満足することがさらに好ましく、特に、40μm≦D≦60μmの関係を満足することが好ましい。\n\n【0038】\n\n本発明の実施形態によるワイヤソー20を用いると、良好な切削効率が実現でき、且つ、切削屑の排出性にも優れるので、比較的高い走行速度(例えば1000m/min)で切削できるとともに、従来よりも長期間に亘って使用することができる。また、上記の冷却液によって効率良く冷却されるので、良好な加工精度で、長期間に亘って安定に希土類合金を切削することができる。水を主成分とする冷却液を用いると、油性の冷却液を用いる場合よりも、走行速度を20〜30%程度速く(例えば、1100m/min〜1200m/min)設定することによって、切削効率を最適化できる。\n\n【0039】\n\n本発明の実施形態による切断方法に用いる水を主成分とする冷却液は、粘度が低い(動粘度が約1mm2/s)ので、切削屑の排出性が油性の冷却液(一般に動粘度は5mm2/s以上)よりも低い。そこで、切削屑の排出性を高めるために、切削工程において、切削部が槽内に収容された冷却液に浸漬された状態に維持され、且つ、冷却液は、槽の底部から槽内に供給されるとともに、槽の開口部から供給されることによって、槽の開口部から溢れ出る状態に維持されることが好ましい。\n\n【0040】\n\n粘度の低い冷却液中に排出された切削屑は、容易に沈降し、槽の開口部付近に浮遊する切削屑は僅かである。切削部を冷却液中に浸漬した状態で切削するためには、ワイヤソーは槽の開口部付近の冷却液中を走行するように配置されるので、ワイヤソーは切削屑の少ない冷却液中を走行し、切削部には切削屑の少ない冷却液が供給される。特に、槽の開口部からも冷却液を供給し、開口部から溢れる状態に維持することによって、切削部に供給される冷却液中の切削屑の量を低下させることができる。さらに、槽の開口部から供給される冷却液の流れによって、ワイヤソーに付着した切削屑を機械的に洗い流す効果も得られる。冷却液が1分間に溢れ出る量は、槽の容積の50%以上であることが好ましい。また、開口部から供給される冷却液の量は、槽の底部から供給される冷却液の量よりも多いことが好ましい。\n\n【0041】\n\nさらに、槽の開口部のワイヤソーの走行方向と交差する辺上に、カーテン状の冷却液流(\n\nまたは気流)を形成することによって、冷却液が槽の開口部から溢れ出るのを抑制することによって、溢れ出る冷却液の液面を槽の壁よりも高くすると、より多くの冷却液が切削部の周囲に供給されることになるので、冷却液中の切削屑の量をさらに低下させることができる。冷却液流を形成するための吐出圧は、0.2MPa(2kgf/cm2)〜1.0MPa(10kgf/cm2)の範囲内にあることが好ましく、0.4MPa(4kgf/cm2)〜0.6MPa(6kgf/cm2)の範囲内にあることがさらに好ましい。この範囲よりも吐出圧が低いと充分な効果が得られないことがあり、この範囲よりも高いとワイヤソーがたわみ、加工精度が低下することがある。\n\n【0042】\n\nまた、ワイヤソーを走行させるために設けられるメインローラのうち、槽の両側に配置され、ワイヤソーの走行位置を規制する一対のメインローラにも冷却液を吐出することが好ましい。これらのメインローラに冷却液を吐出することによって、メインローラの表面に設けられている、ワイヤソーを案内するための溝を有する高分子層(例えばウレタンゴム層などの有機高分子層)の温度上昇を抑制するとともに、ワイヤソーまたは案内溝に付着または滞留した切削屑(またはスラッジ)を洗い流すことによって、ワイヤソーの走行位置がずれたり、ワイヤソーが溝から外れたりするのを防止することができる。\n\n【0043】\n\nまた、切削工程で生成された、希土類合金の切削屑を含むスラッジと冷却液とからなるダーティ液を回収し、スラッジのなかから希土類合金の切削屑を磁石を用いて分別することによって、冷却液を再利用(例えば、循環的に使用)することができる。上述したように、水を主成分とする冷却液は粘度が低いので、切削屑を容易に分別することができる。また、希土類合金の切削屑を分別することによって、冷却液の廃液処理を容易に且つ環境にダメージを与えないように実施することができる。さらに、R-Fe-B系合金(RはYを含む希土類元素)から容易に分離できない炭素を少なくできるために、切削屑を希土類合金の再生原料として利用することもできる。冷却液は水を主成分とするので、切削屑から再生された希土類合金に含まれる炭素の量を低くすることが容易なので、希土類磁石の材料として用いられる原料を得ることができる。スラッジからの切削屑の分別方法は、例えば、本願出願人が特開2002-36113号に開示した方法を用いることができる。\n\n【0044】\n\n本発明の実施形態による切断方法を採用すると、希土類合金を高精度で且つ効率良く切断できるので、例えば、磁気ヘッドの位置決めに用いられるボイスコイルモータ用の小さな希土類磁石(例えば、厚さが0.5mm〜3.0mm)を高精度で且つ効率良く製造することができる。\n\n【0045】\n\n以下、図面を参照しながら、本発明による希土類合金の切断方法の実施形態をさらに具体的に説明する。本実施形態では、上述のネオジム磁石の製造に用いられるネオジム磁石焼結体の切断方法を説明する。\n\n【0046】\n\nネオジム(Nd-Fe-B系)焼結磁石を作製する方法を簡単に説明する。なお、磁石材料としての希土類合金を作製する方法は、例えば、上述の米国特許第4,770,723号明細書およびに米国特許第4,792,368号明細書に詳細に開示されている。\n\n【0047】\n\nまず、原料金属を所定の成分比に正確に秤量した後、真空またはアルゴンガス雰囲気で高周波溶解炉にて原料金属を溶解する。溶解した原料金属を水冷の鋳型に鋳込み、所定の組成の原料合金を形成する。この原料合金を粉砕し、平均粒径3〜4μm程度の微粉末を作製する。この微粉末を金型に入れ、磁界中でプレス成形する。このとき必要に応じて微粉末を潤滑剤と混合してからプレス成形を行う。次に、約1000℃〜約1200℃程度の焼結工程を行えばネオジム磁石焼結体を作製することができる。この後、磁石の保磁力を向上させるために約600℃での時効処理を実行し、希土類磁石焼結体の作製を完了する。焼結体のサイズは、例えば30mm×50mm×50mmである。\n\n【0048】\n\n得られた焼結体の切断加工を行い、焼結体から切断した複数の薄板(基板またはウェハと称される場合がある)を形成する。得られた焼結体の薄板のそれぞれに対して研磨による仕上げ加工を行い、寸法と形状を整えた後、長期的な信頼性を向上させるため、表面処理を施す。この後、着磁工程を実行した後、検査工程を経てネオジム焼結磁石が完成する。なお、着磁工程を切断工程の前に行ってもよい。\n\n【0049】\n\n次に、本発明の実施形態による切断方法を図2から図5を参照しながら更に詳細に説明する。\n\n【0050】\n\n図2は、本発明の実施形態による希土類合金の切断方法を実行するために好適に用いられるワイヤソー装置100を示す概略構成図である。\n\n【0051】\n\nワイヤソー装置100は、3本のメインローラ10a、10bおよび10cと、一対のリールボビン40aおよび40bとを有している。冷却液を収容する槽30の下部に設けられているメインローラ10aが駆動ローラで、槽30の両側に設けられているメインローラ10bおよび10cは従動ローラである。ワイヤソー20は、往復走行しながら、例えば、一方のリールボビン40aから他方のリールボビン40bに巻き取られる(いわゆる、往復駆動法)。このとき、リールボビンの40aの巻き取り時間を他方のリールボビン40bの巻き取り時間よりも長くすることによって、ワイヤソー20を往復走行させながら、リールボビン40a側に新しいワイヤソー20を供給することができる。ワイヤソー20の走行速度は、例えば、600m/minから1500m/minの範囲であり、新線を供給する速度は、例えば、1m/min〜5m/minの範囲である。\n\n【0052】\n\nメインローラ10a、10bおよび10cの間には、ワイヤソー20が例えば150列に張設される。ワイヤソー20の走行位置を決めるために、メインローラ10a、10bおよび10cの表面には、ワイヤソー20を案内するための溝(例えば深さ約0.6mm、不図示)を有する高分子層(例えばウレタンゴム層などの有機高分子層)が設けられている。ワイヤソー20の列間の間隔は、この案内溝のピッチによって決められる。案内溝のピッチは、ワークピースから切り出すべき板の厚さに応じて設定される。高分子層としては、シリコーン系エラストマ等から形成された無機高分子層を用いることもできる。\n\n【0053】\n\nリールボビン40aおよび40bの近傍には、巻き取り位置を調整するためのトラバーサ42aおよび42bがそれぞれ設けられている。リールボビン40aおよび40bからメインローラ10aに至るまでの経路中には、それぞれの側に5つのガイドローラ44と、1つのテンションローラ46とが設けられており、ワイヤソー20を案内するとともに、その張力が調整される。ワイヤソー20の張力は、種々の条件(切削長、切断速度、走行速度など)に応じて適宜変更され得るが、例えば20N〜40Nの範囲に設定される。\n\n【0054】\n\n上述したようにして作製された焼結体ワークピース50は、以下の様にして、ワイヤソー装置100にセットされる。\n\n【0055】\n\n複数のワークピース50は、例えばエポキシ系の接着剤(不図示)によって相互に固着され、複数のブロックとして組み立てられた状態で、炭素ベースプレート52を間に介して、鉄製のワークプレート54に固定される。ワークプレート54、ワークピース50の各ブロックおよび炭素ベースプレート52も接着剤(不図示)によって互いに固着されている。炭素ベースプレート52は、ワークピース50の切断加工が終了した後、ワークプレート54の下降動作が停止するまでワイヤソー20による切断加工を受け、ワークプレート54を保護するというダミーとして機能する。\n\n【0056】\n\n本実施形態では、ワイヤソー20の走行方向に沿って計測した各ブロックのサイズが100mm程度になるように各ブロックの大きさを設計している。本実施形態では上述のようにワークピース50を複数のブロックに分割して配置しているが、ワイヤソー20の走行方向におけるサイズをどの程度の大きさに設定すべきかは、冷却液の表面張力や走行速度によっても変化する。また、各ワークピース50の大きさによって、ひとつのブロックを構成するワークピース50の数や配置も変化する。これらを考慮して、適宜最適なサイズのブロックに分けてワークピース50を配置すればよい。\n\n【0057】\n\n上述のようにセットされたワークピース50は、モータ58を備える昇降装置によって下降され、走行するワイヤソー20に押し付けられ、切削加工される。ワークピース50の下降速度は、種々の条件に応じて変化し得るが、例えば、20mm/hr〜50mm/hrの範囲内に設定される。\n\n【0058】\n\n冷却液タンク60に貯蔵されている冷却液は、吐出ポンプ62によって、配管63を介して圧送される。配管63は、途中で、下部配管64と上部配管66とに分岐されている。下部配管64および上部配管66には、それぞれへの冷却液の流量を調整するためのバルブ63bおよび63aが設けられている。下部配管64は、切削部を浸漬するための槽30の底部に設けられた下部ノズル64aに接続されている。上部配管66は、槽30の開口部から冷却液を供給するための上部ノズル66a、66bおよび66cと、メインローラ10bおよび10cをそれぞれ冷却するために設けられた上部ノズル66dおよび66eとに接続されている。\n\n【0059】\n\n槽30には、上部ノズル66a、66bおよび66cと下部ノズル64aとから冷却液が供給され、少なくとも切削工程の間は、図2中に矢印Fで示したように、冷却液が槽30の開口部から溢れ出る状態に維持される。槽30から溢れ出た冷却液は、槽30の下方に設けられた回収用パン70によって回収タンク72に導かれ、蓄積される。回収された冷却液は、例えば図2に示したように、吐出ポンプ74によって循環用配管76を介して、冷却液タンク60に送られる。循環用配管76の途中には、フィルタ78が設けられており、回収された冷却液中の切削屑が分別除去される。回収方法は、これに限られず、磁力を利用して切削屑を分別する機構を設けてもよい(例えば特開2002-36113号参照)。\n\n【0060】\n\n次に、図3を参照しながら、本発明による切断工程をさらに詳細に説明する。\n\n【0061】\n\n槽30は、ワイヤソー20の走行方向と交差する側壁の開口部付近に補助壁32を有している。この補助壁32は、プラスチック板(例えばアクリル板)で形成されており、図3中に破線で示した無負荷のワイヤソーの走行位置と近接するように設けられている。切断するためにワークピース50を下降し、ワイヤソー20に接触させるとワイヤソー20はたわみ、図3中に実線で示したように、槽30内の冷却液に切削部が浸漬された状態となる。このとき、ワイヤソー20がたわむに連れて、ワイヤソー20は補助壁32を切削し、スリットを形成する。ワイヤソー20による切削が定常状態になると、たわみ量は一定し、ワイヤソー20は補助壁32に形成されたスリット内を通過しながら、ワークピース50を切削する。従って、補助壁32に形成されたスリットは、ワイヤソー20の走行位置を規制するように機能し、加工精度の安定にも寄与する。\n\n【0062】\n\n槽30は、例えば約35L(リットル)の容量を有しており、切削工程中は、下部ノズル64aから約30L/minの流量で冷却液が供給され、上部ノズル66a、66bおよび66cから約90L/minの流量で冷却液が供給され、常に冷却液が開口部から溢れ出る状態に維持される。ワイヤソー20に冷却液を供給することだけを考えると、図2に示したように、切削中はワイヤソー20がたわむので、冷却液を溢れさせる必要は必ずし\n\nも無いが、例示するネオジム磁石焼結体では切削屑の排出性を向上するために、上記のような構成を採用することが好ましい。\n\n【0063】\n\n切削屑の排出性を高めるためには、切削部付近の冷却液内に含まれる切削屑の量を減らすことが有効である。十分な排出性を得るためには、冷却液が1分間に溢れ出る量は、槽の容積の50%以上であることが好ましい。さらに、新鮮な冷却液は、槽30の底部よりも開口部から多く供給することが好ましい。水を主成分とする粘度の低い冷却液を用いているので、冷却液中に排出された切削屑は容易に沈降するので、槽30の底部から多くの冷却液を供給すると、沈降した切削屑が切削部近傍に浮遊する原因となるので好ましくない。\n\n【0064】\n\nまた、開口部から供給される新鮮な冷却液が占める割合を多くすることが好ましい。すなわち、槽30の開口部からも冷却液を供給し、開口部から溢れる状態に維持することによって、切削部に供給される冷却液中の切削屑の量を低下させることができる。さらに、槽30の開口部から供給される冷却液の流れによって、ワイヤソー20に付着した切削屑を機械的に洗い流す効果も得られる。\n\n【0065】\n\nまた、上述した補助壁32は、ワイヤソー20によって形成されたスリット以外の部分は、槽30の側壁として機能するので、冷却液の液面Sを高く保つように機能する。さらに、槽30の開口部のワイヤソー20の走行方向と交差する方向に、ノズル66bおよび66eを用いて、カーテン状の冷却液流を形成し、冷却液が槽30の開口部から溢れ出るのを抑制することによって、溢れ出る冷却液の液面Sを槽30の補助壁32よりも高くなるので、より多くの冷却液が切削部の周囲に供給され、冷却液中の切削屑の量をさらに低下させることができる。冷却液流を形成するための吐出圧は、0.2MPa(2kgf/cm2)〜1.0MPa(10kgf/cm2)の範囲内にあることが好ましく、0.4MPa(4kgf/cm2)〜0.6MPa(6kgf/cm2)の範囲内にあることがさらに好ましい。この範囲よりも吐出圧が低いと充分な効果が得られないことがあり、この範囲よりも高いとワイヤソー20にぶれが発生し、その結果、加工精度が低下することがある。\n\n【0066】\n\nまた、槽30の両側に配置され、ワイヤソー20の走行位置を規制する一対のメインローラ10bおよび10cにも冷却液を吐出することが好ましい。これらのメインローラ10bおよび10cに冷却液を吐出することによって、メインローラ10bおよび10cの表面に設けられている、ワイヤソー20を案内するための溝を有する高分子層(例えばウレタンゴム層)の温度上昇を抑制するとともに、ワイヤソー20または案内溝に付着または滞留した切削屑(またはスラッジ)を洗い流すことができるので、ワイヤソー20の走行位置がずれたり、ワイヤソー20が溝から外れたりするのを防止することができる。\n\n【0067】\n\n水を主成分とする冷却液に添加される界面活性剤としては、アニオン系として、脂肪酸石鹸やナフテン酸石鹸等の脂肪酸誘導体、又は長鎖アルコール硫酸エステルや動植物油の硫酸化油等の硫酸エステル型、又は石油スルホン酸塩等のスルホン酸型、非イオン系として、ポリオキシエチレンアルキルフェニルエーテルやポリオキシエチレンモノ脂肪酸エステル等のポリオキシエチレン系、ソルビタンモノ脂肪酸エステル等の多価アルコール系、又は脂肪酸ジエタノールアミド等のアルキロールアミド系を用いることができる。具体的には、ケミカルソリューションタイプのJP-0497N(カストロール社製)を水に2重量%程度添加することによって、表面張力および動摩擦係数を所定の範囲内に調整することができる。\n\n【0068】\n\nまた、シンセティックタイプ合成潤滑剤としては、シンセティック·ソリューションタイプ、シンセティック·エマルションタイプおよびシンセティックソリュブルタイプを用い\n\nることができ、そのなかでも、シンセティック·ソリューションタイプが好ましく、具体的には、シンタイロ9954(カストロール社製)や、#830および#870(ユシロ化学工業社製)を挙げることができる。いずれも、水に2重量%〜10重量%程度添加することによって、表面張力(または動摩擦係数)を好適な範囲内に調整することができる。\n\n【0069】\n\nまた、錆止め剤を含有させることで、希土類合金の腐食を防止することができる。特に、R-Fe-B系希土類合金を切断する際には、PHを8〜11とすることが好ましく、PHは9以上であることがさらに好ましい。錆止め剤としては、有機系として、オレイン酸塩や安息香酸塩等のカルボン酸塩、又はトリエタノールアミン等のアミン類、無機系として、りん酸塩、ホウ酸塩、モリブデン酸塩、タングステン酸塩、又は炭酸塩を用いることができる。\n\n【0070】\n\nまた、非鉄金属防食剤としては、例えばベンズトリアゾール等の窒素化合物を、防腐剤としては、ヘキサハイドロトリアジン等のホルムアルデヒド供与体を用いることができる。\n\n【0071】\n\nまた消泡剤としては、シリコーンエマルジョンを用いることができる。消泡剤を含有させることで、冷却液の泡立ちを少なくし、冷却液の浸透性をよくし、冷却効果を高め、ワイヤソー20の温度の異常上昇や異常摩耗が起こりにくくなる。\n\n【0072】\n\n図4と図5(a)および(b)を参照しながら、本実施形態で好適に用いられるワイヤソー20の構造を説明する。なお、図4では、ワイヤソー20の一点鎖線で示した中央線から下半分は簡略化している。\n\n【0073】\n\nワイヤソー20としては、芯線(ピアノ線)22の外周面にダイヤモンド砥粒24を樹脂層26で固着したものが好適に用いられる。そのなかでも、樹脂としてフェノール樹脂、エポキシ樹脂またはポリイミド樹脂を用いることが好ましい。これらの樹脂は、ピアノ線(硬鋼線)22の外周面への接着強度が高く、また上述した冷却液に対する濡れ性(浸透性)にも優れる。\n\n【0074】\n\n好適なワイヤソー20の具体例としては、直径が約0.18mmのピアノ線22の外周に平均粒径が約40μmのダイヤモンド砥粒をフェノール樹脂層26で固着した外径が約0.24mmのワイヤソー20が挙げられる。切削効率と切削屑(スラッジ)の排出効率の観点から、ワイヤソー20の長さ方向(軸方向:図4中の一点破線に平行な方向)における、互いに隣接する砥粒26間の平均距離は、砥粒の平均粒径Dの150%以上400%未満の範囲内にあるものが好ましい。\n\n【0075】\n\n例えば、図5(a)および(b)に示したように、ワイヤソー20の長さ方向の隣接砥粒間の平均距離Lが砥粒の平均粒径Dの200%や300%の場合には、個々の砥粒24に掛かる負荷が低減され、その結果、砥粒24の異常脱粒や樹脂層26の剥離、ひいては断線の発生が低減される。すなわち、隣接砥粒間の平均距離Lが400%以上になると、砥粒24の分布密度が疎になりすぎる結果、切削工程において個々の砥粒24に掛かる負荷が大きくなりすぎ、異常脱粒を起こしてしまう。一方、隣接砥粒間の平均距離Lが150%を下回ると、砥粒24の分布密度が疎になりすぎる結果、後述するチップポケットの容量が十分でなく、切削屑の排出性が低下し、その結果、切削効率が低下する。\n\n【0076】\n\nなお、図5(a)および(b)は、ワイヤソー20の外周面(長さ約1.6mm)を平面に引き伸ばして、砥粒24が均一に分布した例を模式的に示したが、実際には、砥粒24が不均一に分布する。しかしながら、隣接砥粒間の平均距離Lの違いによる砥粒の分布密度に対する半定量的な影響はこれらの図から理解される。実際のワイヤソー20における\n\n隣接砥粒間の平均距離Lは、例えば、光学顕微鏡写真から求めることができる。\n\n【0077】\n\nさらに、ワイヤソー20における砥粒22の突き出し率は、70%以下であることが好ましい。突き出し率が70%を超えると、砥粒22に掛かる負荷を樹脂層26によって十分に支持できないため、異常脱粒や樹脂層の剥離が発生しやすくなる。また、切削屑の排出性の観点からは、砥粒の突き出し率は40%を超えることが好ましい。突き出し率が40%以下であると、砥粒22間に形成される空間(チップポケット)28の容積が十分でないため切削屑の排出性が低下し、その結果、切削効率が低下することがある。チップポケット28の大きさは、上述した隣接砥粒間距離にも依存していることは言うまでも無い。\n\n【0078】\n\nさらに、本実施形態の切断方法では、樹脂層26の偏肉率が40%以下のワイヤソー20を用いる。偏肉率が40%を超えると、砥粒24を固着している樹脂層26に掛かる負荷が不均一となり、そのワイヤソー20を用いて切断を行なうと、樹脂層26の局所的な強度が不足する結果、砥粒24の異常脱粒や樹脂層26の剥離が発生しやすくなる。\n\n【0079】\n\n以下に、実験例を示して、ワイヤソー20の平均隣接間距離L、砥粒の突き出し率および偏肉率と、樹脂層26の剥離や断線、および切断面の面精度(うねり)との関係を説明する。\n\n【0080】\n\n以下の実験例では、ネオジム磁石焼結体のブロック(走行方向長さ40mm、横方向長さ50mm、厚さ30mm)を図2に示したワイヤソー装置100を用いて、上述の方法でブロックの横方向の辺を分断するように切断した。冷却液としては、ユシロ化学工業社製のWS-250Bを水(水道水)に添加することによって、表面張力を34.6mN/m、動摩擦係数を0.13に調節したものを用いた。ワイヤソー20の走行速度は、1100m/分、切断速度(厚さ方向)は40mm/時間とした。\n\n【0081】\n\nワイヤソー20の芯線(ピアノ線)22の直径は0.18mm、砥粒(ダイヤモンド砥粒)24の平均粒径は42μmとした。樹脂としては、フェノール樹脂を用い、樹脂層26の平均厚さ(理想的な厚さ)が20μmのものを用いた。ワイヤソー20の平均隣接間距離L、砥粒の突き出し率および偏肉率は、光学顕微鏡写真から求めた。なお、偏肉率は、長さ500mm間隔で約10箇所の断面について測定した結果を用いた。樹脂層26の剥がれは、ネオジム磁石焼結体のブロックを4時間加工した後のワイヤソー20の外観を目視で観察することによって評価した。例えば、ワイヤソー20の長さが200mの場合、長さが5mm以上の剥がれが累積で10m以上あれば剥がれ発生とし、剥がれの長さの累積が10m以上60m以下を「少量発生」とし、60m超の場合を「全面発生」とした。また、「少量発生」のうち、隣接する剥がれ箇所の間隔が20m以上の場合を「断続発生」とした。また、切断面の面精度を接触式の粗さ計を用いて測定し、約25mmの幅内の最大うねりを代表値として用いて評価した。\n\n【0082】\n\nまず、ワイヤソー20の長さ方向の隣接砥粒間平均距離Lの影響を調べた結果を表1に示す。\n\n【0083】\n\n表1から明らかなように、隣接砥粒間平均距離Lが砥粒の平均粒径の150%以上400%未満の範囲では樹脂層26の剥がれは発生せず、また、切断面の面精度も約8μm未満で良好であった。それに対し、隣接砥粒間平均距離Lが平均粒径の150%未満では切削効率が低く、40mm/時間の切断速度を実現することは難しかった。また、隣接砥粒間平均距離Lが平均粒径の400%以上になると樹脂層26の剥がれが発生し、600%以上になるとワイヤソー20の全面に亘って樹脂層26が剥離し、断線するものもあった。また、隣接砥粒間平均距離Lが平均粒径の400%以上になると、切断面の面精度が8μm以上の大きな値となった。これらのことから、ワイヤソー20の隣接砥粒間平均距離L\n\nは砥粒の平均粒径の150%以上400%未満の範囲内に設定することによって、ワイヤソー20の寿命を長くできるとともに、十分な切断面の面精度が得られることが分かる。\n\n【0084】\n\n【表1】\n\n\n\n【0085】\n\n次に、砥粒24の突き出し率の影響を調べた結果を表2に示す。\n\n【0086】\n\n表2から分かるように、突き出し率が71%以上のワイヤソー20を用いると、樹脂層26の剥がれが発生し始め、突き出し率が83%を超えるワイヤソー20を用いると断線が発生した。また、突き出し率が71%以上のワイヤソー20を用いると、切断面の面精度(うねり)が10μm以上となった。突き出し率が60%以下のワイヤソー20を用いると、切断面の面精度を8μm以下に抑制することができるので更に好ましい。但し、突き出し率が40%以下のワイヤソーを用いると、樹脂層の剥がれは発生せず、且つ、十分な切断面の面精度が得られる反面、切削効率が低下することがある。従って、突き出し率は40%以上であることが好ましい。\n\n【0087】\n\n【表2】\n\n\n\n【0088】\n\n次に、樹脂層26の偏肉率の影響を調べた結果を表3に示す。\n\n【0089】\n\n表3から明らかなように、偏肉率が50%以上のワイヤソー20を用いると樹脂層26の剥がれが発生し、偏肉率が100%以上のワイヤソー20を用いると断線が発生した。これに対し偏肉率が40%以下のワイヤソー20を用いると樹脂層26の剥がれは発生せず、且つ、切断面の面精度が4μm以下の小さな値となった。偏肉率は30%以下であることがさらに好ましいが、40%以下でも十分量産に使用できる。\n\n【0090】\n\nなお、ワイヤソー20の樹脂層26の剥がれや断線の発生は、ローラ間を走行させられるワイヤソー20の張力にも依存する。上述の結果は、ワイヤソー20の張力を30Nとした場合の結果であり、ワイヤソーの張力が25N以上35N以下である場合にほぼ同様の結果を得ることができる。\n\n【0091】\n\n【表3】\n\n\n\n【0092】\n\n次に、上述のワイヤソーを用いたワイヤソー装置100のメインローラ10a、10bおよび10cの好ましい構造を説明する。\n\n【0093】\n\n水を主成分とする冷却液を用いると、油性の冷却液を用いた場合よりもワイヤソーの断線率が増加(すなわち、より短い時間で断線)するとともに、加工精度が低下するという問題が発生する。本発明者が種々検討した結果、図7に模式的に示すように、ローラ10a、10bおよび10cの高分子層10Pに形成された案内溝10Gの断面形状を、案内溝10Gが有する一対の斜面10Sがローラ10aの半径方向10Rに対して25°以上45°未満の角度(以下、「傾斜角(α)」という。)を成す構成を採用することによって、ワイヤソー20の断線の発生をさらに抑制するとともに、十分な加工精度を得ることができることがわかった。傾斜角は、30°以上35°以下であることがさらに好ましい。\n\n【0094】\n\nなお、例示したように、案内溝10Gが有する一対の斜面10Sの両方がローラ10aの半径方向10Rに対して上記の範囲の傾斜角を有することが好ましいが、一対の斜面10Sの内の少なくとも一方が上記の範囲の傾斜角を有していれば、断線の発生を抑制する効果および十分な加工精度を得ることができる。\n\n【0095】\n\n従来は、例えば図7に示すように、案内溝10Gの斜面10Sがローラの半径方向10Rに対して45°以上の傾斜角を成す構造を採用していた。これは、案内溝10Gから効率よくスラッジを十分に排出させるためであり、特に、希土類合金は脆性的な破壊を起こす\n\n主相と延性的な破壊を起こす粒界相とを有するために切削抵抗が高く、且つ、比重が大きいのでスラッジの排出性が悪いため、スラッジの排出性を高めるために、傾斜角を45°超としていた。\n\n【0096】\n\nしかしながら、本発明者が検討した結果、斜面10Sの傾斜角を45°よりも大きくすると、断線発生率はそれほど低下せず、むしろ、加工精度が低下するという問題が発生することがわかった。以下に、図8を参照しながら、この現象を説明する。ワイヤソー20は、図2を参照しながら説明したように、ローラ10a、10bおよび10cの間に互いに平行な複数の走行線の列を形成するように多条に掛けられる。走行線の列を形成するワイヤソー20の位置は、ローラ10a、10bおよび10cのそれぞれの高分子層10Pに形成された案内溝10Gによって規定されるので、ある走行線から隣の走行線に移る際に、ワイヤソー20は案内溝10Gに斜めに掛けられる。この斜めに掛けられたワイヤソー20が案内溝10Gの斜面10Sから捻回力を受ける。また、ワイヤソー20が斜めになるほどより大きな捻回力を受けることになる。\n\n【0097】\n\n図8は、ローラの案内溝の斜面10Sの傾斜角とワイヤソーの捻れ角との関係を示すグラフである。捻れ角Ωは、ワイヤソー20がロールから受ける捻回力に比例し、捻れ角Ω=360°のときワイヤソーが一回捻回されていることを示す。なお、図8に示した結果は、以下で説明する構成についての力学的なモデル計算から求めた。なお、斜面10Sの傾斜角は、両側の斜面で等しいとした。結果を示している。\n\n【0098】\n\n450mmの間隔(スパン)で配置した一対のローラ(図1のローラ10bと10d)直径170mm)の間に、ワイヤソー20を張力30N(3kgf)で200条配設する。新線供給量は2m/分で、120秒サイクルで往復走行させる。このとき、ワイヤソー20は、約190回往復走行された後、ローラから脱出することになる。\n\n【0099】\n\nここで、種々実験した結果、1スパン(450mm)の間でワイヤソーが5回(Ω=1800°)捻回する力を受けると、ワイヤソー20が200条分走行する間に、約500回捻回した。すなわち、200条×5回=1000回分捻回する力を受けたとき、その約50%分が実際の捻回として蓄積された。そこで、図8における縦軸の捻れ角Ωは、力学的なモデル計算から求められる捻回力に対応する捻れ角に0.5を乗じた値を示している。また、静的な捻れ破断強度試験から、ワイヤソー20に実際に蓄積される捻れ角が1800°(5回捻回)となったときに、10%の確率でワイヤソーが破断すると見積もった。\n\n【0100】\n\n図8からわかるように、捻回力(捻れ角)は、溝10Gの傾斜角αが大きくなるにつれて単調に減少する。単純に捻回力のみよるワイヤソー20の破断を考えると、ワイヤソー20が細い場合(直径d=0.19mm)には傾斜角を10°以上、太い場合(直径が0.25mm)でも傾斜角を25°以上とすれば、ワイヤソー20の破断を抑制できることになる。\n\n【0101】\n\nしかしながら、実験によると、いずれのワイヤソー20を用いた場合も、傾斜角が45°以上になると、断線発生率があまり低下しなかった。また、傾斜角が45°以上になると加工精度が低下するという問題が発生した。\n\n【0102】\n\nこれは、傾斜角が大きくなると、案内溝10Gの幅10W(図6参照)が大きくなり、ワイヤソー20が案内溝10G内で振れたり、更には、隣接する案内溝10Gに飛び移ったりするため、ワイヤソー20に掛かる張力や捻回力が不均一となり、局所的に大きな応力が発生する結果、ワイヤソー20の断線が発生するものと考えられる。また、ワイヤソー20が案内溝10G内を安定に走行しない結果、加工精度が低下するものと考えられる。なお、実験には、高分子層10Pとしてウレタンゴム層を用い、冷却液としてはユシロ化\n\n学工業社製#830の約10%水溶液を用いた。また、上記の実験例と同じ希土類焼結磁石のワークピースを切断した。\n\n【0103】\n\n上述の結果から、案内溝10Gの斜面10Sの傾斜角は、25°以上45°未満であることが好ましい。なお、ワイヤソー20の断線をなるべく抑制するためには、捻回力が低下するように、傾斜角を30°以上とすることが好ましく、高い加工精度を得るためには傾斜角を35°以下とすることが好ましい。また、なお、案内溝10Gの底部10Bは、ワイヤソー20の半径よりもやや小さめの曲率半径に加工しておくことが好ましい。\n\n【0104】\n\n上述したワイヤソー装置100を用いると、上述の実施形態のワイヤソー20を用いることによる効果と相まって、ワイヤソー20の寿命を更に長くすることができる。特に、ローラ間距離が短い場合のように、比較的大きな捻回力が発生する場合に、本実施形態の効果が大きい。\n\n【0105】\n\nワイヤソー装置100を例示して本発明の実施形態を説明したが、本発明はこれに限られず、単一のリールボビンを用いるエンドレス型のワイヤソー装置(例えば特開平11-198018号公報参照)に適用することができる。\n\n【0106】\n\n【発明の効果】\n\n本発明によると、ワイヤソー装置で水を主成分とする冷却液を用いて希土類合金を切断する際のワイヤソーの寿命を長くすることが可能になる。従って、水を主成分とする環境にやさしい冷却液を用いて、例えば、ボイスコイルモータに用いられる希土類焼結磁石用の希土類焼結合金を効率良く切断することが可能となる。すなわち、希土類焼結磁石の製造コストを低減することができる。\n\n【図面の簡単な説明】\n\n【図1】(a)はワイヤソーの砥粒突き出し率の定義を説明するための模式的な断面図であり、(b)はワイヤソーの偏肉率の定義を説明するための模式的な断面図である。\n\n【図2】本発明による実施形態の希土類合金の切断方法を実行するために好適に用いられるワイヤソー装置100を示す模式図である。\n\n【図3】図1に示したワイヤソー装置100の切削部近傍の構成を示す模式図である。\n\n【図4】本発明による実施形態の希土類合金の切断方法を実行するために好適に用いられるワイヤソー20の断面構造を模式的に示す図である。\n\n【図5】(a)および(b)は、本発明による実施形態の希土類合金の切断方法を実行するために好適に用いられるワイヤソー20における砥粒分布を模式的に示すであり、(a)は隣接砥粒間平均距離Lが砥粒の平均粒径の200%、(b)は300%の場合を示している。\n\n【図6】ワイヤソー装置100および200に好適に用いられるローラの断面構造を模式的に示す図である。\n\n【図7】従来のローラの断面構造を模式的に示す図である。\n\n【図8】ローラの案内溝の斜面10Sの傾斜角とワイヤソー捻れ角との関係を示すグラフである。\n\n【符号の説明】\n\n10a、10b、10c  メインローラ\n\n20  ワイヤソー\n\n22  芯線\n\n24  砥粒\n\n26  樹脂層\n\n28  チップポケット\n\n30  槽\n\n40a、40b  リールボビン\n\n42a、42b  トラバーサ\n\n50  ワーク\n\n60  冷却液タンク\n\n70  回収用パン\n\n80a、80b  噴霧装置', '【0001】\n\n技术领域\n\n本发明涉及一种切割稀土合金的方法,更具体地涉及使用磨料颗粒固定到芯线的钢丝锯切割稀土合金的方法。\n\n【0002】\n\n发明背景\n\n例如,使用稀土合金,例如是有效的磁体材料。通过磁化稀土合金获得的稀土磁铁例如适合使用例如用于定位磁记录装置的磁头的语音线圈电机的磁体。\n\n【0003】\n\n作为切割稀土合金材料(包括铸锭和烧结体)的方法,通常采用例如旋转切片叶片切割稀土合金材料的技术。但是,根据用切片刀片切割的方法,切割叶片的厚度相对较大,因此刮削量增加,稀土合金材料的产率低,稀土的成本合金产品(例如,稀土磁铁)降低。这是一个因素。\n\n【0004】\n\n存在使用导线锯的方法,作为切割方法的切割方法比切片刀片更小。例如,专利文献1使用电线锯(称为“固定磨料线锯”),其中超大磨粒通过高强度芯线的圆周表面上的粘合层固定,以及诸如硅的硬质层,玻璃,钕和铁氧体。它公开了可以切割脆性材料。\n\n【0005】\n\n如果如上所述,可以从稀土合金材料同时制造预定厚度的大量板,如上所述,稀土磁铁的制造成本显着降低。\n\n。然而,仍然没有报道,使用固定的研磨锯在大规模生产水平下稀土合金切割稀土合金。\n\n【0006】\n\n从本发明人的各种考虑因素的结果,稀土合金的机械性能,特别是稀土合金(以下称为“稀土烧结合金”,由烧结方法制造,它通常与硅或硅或硅喜欢。具体地,稀土烧结合金整体脆弱,并且硬主相(即2Fe.14B.由于它具有导致延性破坏的晶界阶段,因此导致延展性破坏的晶界相,与硅代表的艰难和更多的纤毛相同,难以切割。也就是说,与切割诸如硅的硬质和脆性材料如硅的情况相比,切削电阻高,因此热值也很大。另外,稀土合金的比重大于例如约7.5和硅的材料,并且通过切割产生的切割废物(污泥)难以从切割部分排出。\n\n【0007】\n\n因此,为了有效地切割稀土合金,具有高处理精度,切削电阻充分降低,并且在切割时产生的热量有效地加热,即切割部分是有效的冷却。。此外,有必要有效地排出切割产生的切割废物。\n\n【0008】\n\n因此,通过充分供应具有优异润滑性的冷却剂(也称为“切割液体”),降低切割电阻,并且在切割时产生的热量有效地耗散。可以完成。作为本发明人的实验的结果,如果使用油性冷却剂用足够量的冷却剂润湿线锯,则可以通过行进的线锯充分地供应到窄切割部分的冷却剂。\n\n【0009】\n\n专利文献1\n\nJP-A-11-198020\n\n【0010】\n\n本发明要解决的问题\n\n然而,油型冷却剂是昂贵的处理废液,以免引起环境破坏,并且难以将废物分离在废液中,并重用废液和切割乳房存在困难的问题。考虑到这些,水(或水溶性冷却剂)优选为冷却剂,但是当水用作冷却溶液时,水是粘度(1.0mm2既然/ s)低,导线锯不能粘附到行进线锯上,因此即使线锯用水润湿,也可以将足量的水供应到切割部分。\n\n【0011】\n\n美国专利No.美国专利5,958,015,即使在从冷却剂罐中溢出的冷却剂中行驶,即使在高速(例如,2000米/分钟)用固定磨料锯出行驶时,冷却剂也肯定附着在线锯。它公开了它可以完成。然而,根据本发明的实验,即使在用溢出的水中用线锯(例如,专利文献1)在覆盖的锯(例如,专利文献1)的同时切割稀土合金,如果层被剥离,则磨料粒落和树脂甚至更糟糕,电线锯断开发生。该缺陷发生在线锯的行驶速度约为800米/分钟。\n\n【0012】\n\n本发明已经鉴于上述点,并且其主要目的是在使用主要由电线锯装置中的水中的冷却剂切割稀土合金时,增加了线锯的寿命。\n\n【0013】\n\n[解决问题的手段]\n\n根据本发明的切割稀土合金的方法是使用磨料颗粒固定到芯线的钢丝锯切割稀土合金的方法,稀土合金被钢丝锯切割。\n\n在将表面张力浸入25℃的冷却剂中的状态下,通过在25℃的范围内,通过行驶线锯来切割稀土合金。包括步骤,以及电线锯,在纵向上彼此相邻的磨粒之间的平均距离在磨料的平均粒度的150%以上且小于400%的范围内,并且磨粒在上面描述。平均值从树脂层的表面突出的部分的高度为磨料颗粒的平均粒度的70%或更少,并且使用偏差比为树脂层的芯线的偏差比为40%以下的线锯。以上目的通过该目的实现。\n\n【0014】\n\n根据本发明的稀土合金的用于切割方法的水的冷却剂也可以通过动态摩擦系数代替表面张力来规定,并且对于稀土合金25℃的动态摩擦系数是在0.1至0.3的范围内。它的特征在于使用内部冷却剂。\n\n【0015】\n\n研磨颗粒的平均粒径D优选满足20μm≤d≤60μm的关系。\n\n【0016】\n\n芯线的直径优选在0.15mm至0.2mm或更小的范围内。\n\n【0017】\n\n在优选实施例中,行进线锯的步骤是在多个辊之间行驶的步骤,并且多个辊子中的每一个具有其中形成引导槽的聚合物层,引导槽具有一对斜坡至少一个斜面相对于辊的径向形成至少25°或更大且小于45°的角度,并且允许线在一对斜面之间行进。\n\n【0018】\n\n优选地,树脂层由酚醛树脂,环氧树脂或聚酰亚胺树脂形成。\n\n【0019】\n\n在一个优选的实施方案中,稀土合金是R-Fe-B基稀土烧结合金,并且可以是Nd-Fe-B基稀土烧结合金。\n\n【0020】\n\n发明内容\n\n根据本发明的实施方案的切割稀土合金的方法使用磨料纹理(通常是金刚石磨料)通过树脂层固定到芯线(通常是钢琴线)和稀有的地球合金是通过钢丝锯通过在25℃的表面张力的状态下行驶焊丝锯来切割稀土合金的步骤。在25℃的范围内。在25℃的范围内作为导线锯的Mn / m至60mN / m。包括锯的纵向(即,线锯的行进方向)彼此相邻的磨料之间的平均距离在150%或更高的范围内,并且磨料晶粒的平均粒径的少于400%,磨粒从树脂层的表面突出的部分的平均高度为磨粒的平均粒度的70%或更小,并且锯使用相对于树脂层的芯线具有40%或更小的偏差率。作为冷却剂,可以使用具有0.1至0.3的25℃的动态摩擦系数的用于稀土合金。\n\n【0021】\n\n在根据本发明的实施方案的切割稀土合金的方法中,使用固定磨料锯切割稀土合金的步骤是25℃25℃(约25倍/厘米至约60yn / )在25℃下,由于切割部分在切割部分在CM的范围内浸入冷却剂中的状态下进行,因此可以有效地冷却电线锯。与水相比,上述范围内具有表面张力的冷却溶液具有优异的润湿性(或熟悉的)和/或金属锯,因此切割部分(稀土合金和焊丝锯接触,稀土合金也认为冷却剂有效地渗透到切割槽中。)。当然,含有水作为主要成分的冷却溶液比油基冷却流体(例如矿物油)高度冷却,因此冷却效率高。在本说明书中,“主要由水组成的冷却流体”是指的冷却剂,其总共70重量%或更多是水。\n\n【0022】\n\n适用于本发明的稀土合金的切割方法的冷却剂可以通过用于稀土合金的动态摩擦系数来分类,并且冷却剂在上述动态摩擦上方的约0.1至约0.3的范围内在25℃下系数可以表现出在上述范围内具有表面张力的冷却剂的操作和效果。一旦表面张力被认为是指示冷却剂相对于切割部分的渗透性的指示,动态摩擦系数被认为是由冷却剂给切割部分给出的润滑性的指示器。众所周知,表面张力与动态摩擦系数之间存在定性相关性。\n\n【0023】\n\n使用众所周知的Dunui表面张力表测量冷却剂的表面张力。此外,使用米多多型“四球形摩擦测试仪”测量冷却剂对稀土合金的动态摩擦系数,该摩尔迪型“四球形摩擦测试仪”通常用作日本的基本测试仪。如本文所用,25℃的值被采用作为表征用于任何表面张力和动态摩擦系数的冷却剂的值。\n\n【0024】\n\n以下实施例中所示的动态摩擦系数是通过使用铁球的四个球形摩擦测试仪获得的值。在实施例中示出的基于R-Fe-B的稀土合金(R是含有Y的稀土元素,例如ND2Fe.14使金属化合物作为主要阶段的合金是最大的铁含量,因此使用铁球测定的冷却剂的动态摩擦系数是良好的近似,稀土合金的动态摩擦系数。它可以采用。这是通过实验证实的。优选用作稀土磁铁的稀土合金的组合物和制造方法描述于例如美国专利No.4,522,517中。No.4,770,723和4,792,368。在R-Fe-B基稀土合金的典型组合物中,Nd或Pr主要用作R,并且可以部分地由过渡元件(例如CO)部分地替换,B是C.它可以被替换。\n\n【0025】\n\n另外,尽管在25℃下使用表面张力或动态摩擦系数指定了在本发明的切割方法中使用的冷却剂,但实际使用的冷却剂的温度不限于25℃。然而,为了获得本发明的效果,温度控制的冷却剂优选在15℃至35℃的范围内,更优选在20℃至30℃的范围内,和23℃更优选地,它在-28℃的范围内众所周知,由于冷却剂的表面张力和动态摩擦系数取决于温度,当实际使用的冷却剂的温度超出上述温度时,冷却剂的表面张力和冷却剂的动态摩擦系数范围。每个与上述数值范围的状态类似地类似,冷却效率或切削效率降低。\n\n【0026】\n\n通过添加表面活性剂或称为“合成”的合成润滑剂来制备上述冷却剂。通过调整类型和添加量,可以获得预定的表面张力或动态摩擦系数。另外,当使用主要由水组成的冷却剂时,由于相对粘度低,因此可以使用通过切割产生的污泥的磁体容易地分离稀土合金的切割废物,并且冷却剂再次。可以用过的。此外,可以通过丢弃冷却剂来防止对自然环境的不利影响。另外,可以减少污泥中包含的碳的量,并且可以提高由污泥回收的切割肉汤的磁体的磁性。\n\n【0027】\n\n当在切割时以高速执行线锯时,冷却剂可以泡沫并降低冷却效率。通过使用含有消泡剂的冷却溶液,可以抑制由于冷却剂的发泡而抑制冷却效率的降低。此外,可以通过使用冷却剂来抑制稀土合金的腐蚀,其中pH值为8-11。更优选地,使用具有9或更多的pH的冷却溶液。另外,通过使用含有孔校正剂的冷却溶液,可以抑制稀土合金的氧化。可以考虑到稀土合金的类型,切割条件等适当调整这些。\n\n【0028】\n\n作为电线锯,适当使用由树脂层固定的金刚石的磨料颗粒的锯。也就是说,可以使用使用使用树脂的树脂粘附到芯(通常钢琴线)的外周表面的线锯。其中,优选使用酚醛树脂,环氧树脂或聚酰亚胺树脂作为树脂。这些树脂对钢琴线(硬钢丝)的外周表面具有高粘合强度,并且在稍后描述的冷却溶液中也具有优异的润湿性(渗透率)。根据树脂所需的填料(例如SiC或Al)2O.3可以添加(参见,例如,专利No.3078020)。另外,用树脂层的线锯磨削磨粒比使用电沉积方法制造的线锯便宜,并且可以减少稀土合金的切割成本。另外,电线锯的芯线不限于钢琴线,并且由诸如Ni-Cr,Fe-Ni或诸如W的高熔点金属(例如W或高熔点金属)形成的钢琴线。 Mo,或高强度纤维,如尼龙纤维等。它可以由此形成。而且,磨料颗粒的材料不限于金刚石,并且可以是SiC,B,C,CBN(立方硼氮化物)等。\n\n【0029】\n\n当使用上述冷却剂时,由于可以在切割过程中抑制导线的温度的温度异常,而不是使用水作为冷却剂的异常沉积磨粒,树脂层的剥离,以及可以抑制树脂层的锯切。在根据本发明的实施例的切割稀土合金的方法中,除了选择冷却剂之外,还可以通过限制电线锯,进一步减少电线锯更长的时间。制造成本。。如稍后所述,如在实验例中所述,作为线锯,在纵向(行进方向)在纵向(行进方向)彼此相邻的磨粒之间的平均距离在150%或更高,小于400%的范围内磨粒的平均粒径D.是的,磨料从树脂层的表面突出的部分的平均高度为磨粒的平均粒径D的70%或更小,以及偏差比芯线的树脂层为40%或更少。通过使用线锯,可以减少树脂层的异常脱粒和剥离和断开。\n\n【0030】\n\n如上所述,如上所述,如上所述,由于各种考虑,由树脂层固定在芯线的外周上的磨料颗粒的纵向上的密度和磨粒从树脂突出层。通过调节部分的平均高度(突出速率)并将树脂层的Devlus比调节到树脂层的芯线上,同时保持切割乳房(污泥)在良好的范围内,个人磨料的放电晶粒作为均匀负载负荷的结果,推断出树脂层的异常脱粒和剥离和断开。\n\n【0031】\n\n这里,参考图1和图2.如图1A和1B所示,将描述突出速率Pr的定义和偏离因子Td,其表征在本发明的实施例的切割方法的切割方法中使用的线锯。\n\n【0032】\n\n如图1所示。如图1A所示,线锯20通过树脂层26固定到芯线22的外周表面。当磨料颗粒24的平均粒径为d时,磨料颗粒24的部分的高度(突出量)从树脂层26突出,突出量p的比率p到平均粒径d突出量P.(%)。也就是说,表示Pr =(p / d)×100。突出速率Pr例如可以从电线锯20的横截面的光学显微照片获得。\n\n【0033】\n\n电线锯20例如是称为搪瓷方法的方法,例如专利No.3078020中描述的方法,以及将磨料晶粒分散的树脂(根据需要混合)在芯线的周边上。它是通过施加制造的。此时,如果树脂层的厚度的调节不充分地执行,如图2所示,如图1(b)所示,在图1(b)中,树脂层26在包括线锯20的直径的横截面中的厚度(芯线22)。不均匀地芯22。为了定量评估树脂层26的这种偏差,偏差率Td(%)定义如下。\n\n【0034】\n\n芯线22的半径是RW,树脂层26的厚度的最小值是TRL,并且最大值是TRH,并且湿度比Td是(TRH-TRL)/ {(TRH + TRL)/ 2}。另外,分母(TRH + TR1)/ 2可以是树脂层26的平均厚度。通过测量芯线22的直径RW来确定偏差率Td,树脂层26的最小值Tr1和最大值Trh。树脂层26的厚度例如从电线锯20的横截面的光学显微照片获得。当然,理想树脂层26的偏差率为0%。\n\n【0035】\n\n另外,通过牙釉质方法在树脂的施加过程中使用浮动模具在树脂的施加过程中控制树脂层的厚度来制造满足上述条件的线锯20,如专利No.3078020中所示。它将是完毕。如果指定了上述规格,则可以从公共线锯制造商(例如,盟友有限公司)提供这种电线锯20。\n\n【0036】\n\n为了获得切割低的优点,线锯20的外径优选为0.3mm或更小,更优选为0.25mm或更小。线锯20的外径的下限值被设定为获得足够的强度,并且更优选为0.15mm,以将预定尺寸的磨料颗粒具有足够的强度。芯线22使用直径约0.20mm。\n\n【0037】\n\n从切割效率的观点来看,优选满足磨料颗粒24的平均粒径D,更优选满足30μm≤d≤60μm的关系,更特别是40μm≤d满足≤60μm的关系。\n\n【0038】\n\n使用根据本发明的实施例的线锯20,可以实现良好的切削效率,并且在排出切割乳房方面是优异的,因此可以用相对高的行进速度切割(例如,1000米/分钟),它也可以长时间使用。此外,由于冷却溶液有效地冷却,因此可以以良好的加工精度长时间稳定地切割稀土合金。当使用主要由水组成的冷却剂时,通过将行驶速度设定为约20至30%(例如,1100m / min至1200米/分钟)来设定切割效率而不是使用油性冷却剂的情况。它可以优化。\n\n【0039】\n\n主要由根据本发明的实施方案的切割方法中使用的水组成的冷却剂具有较低的粘度(运动粘度约为1mm2/ s),切割围绕的可放电是油基冷却剂(通常为5mm2它低于/ s或更多)。因此,为了增加切割乳房的放电,在切割步骤中,切割部分保持在切割部分浸入容纳在罐中的冷却剂中的状态,并且冷却剂从罐的底部供应到坦克。优选地保持在通过从罐的开口供应的罐的开口溢出的状态。\n\n【0040】\n\n将碎片放入低粘度冷却剂中易于沉降,切割储存靠近罐的漂浮废物是轻微的。为了在浸入冷却剂中浸入切割部分的状态下,线锯设置成在罐的开口附近的冷却剂中行进,因此线锯在具有低切割制动器的冷却液中行进。一个具有小切割部分的冷却剂被供应到切割部分。特别地,通过从罐的开口供应冷却剂,通过从开口保持冷却溶液,可以减小供应到切割部分的冷却剂中的切割废物量。此外,从罐的开口供应的冷却剂的流动还可以获得机械地冲洗连接到钢丝锯的切割肉汤的效果。溢出1分钟的冷却剂的量优选为罐体积的50%以上。此外,从开口供应的冷却剂的量优选大于从罐的底部供应的冷却剂的量大。\n\n【0041】\n\n此外,窗帘状冷却液流(\n\n或者,通过形成气流),通过抑制从罐的开口溢出的冷却剂,如果冷却剂的液体表面高于罐的壁,则更多的冷却剂是切割单元。因为它会供应,冷却剂中的切割废物量进一步降低。用于形成冷却液流的排出压力为0.2MPa(2kgf / cm2〜1.0 mpa(10 kgf / cm2优选在0.4MPa(4kgf / cm)的范围内2)〜0.6 mpa(6 kgf / cm2更优选地,它在范围内。如果放电压力低于该范围,则可能无法获得足够的效果,如果它高于该范围,则线锯可以弯曲并且可以减小处理精度。\n\n【0042】\n\n此外,在提供线锯的主辊中,优选将冷却剂排出到设置在罐的两侧的一对主辊上,并调节线锯的行驶位置。通过将冷却剂排出到这些主辊上,在主滚轮的表面上设置具有具有用于引导线锯的凹槽的凹槽的聚合物层(例如,有机聚合物层)的温度升高。通过抑制线锯或引导沟槽,可以通过将线锯或附接到线锯或引导槽的线锯或导线锯(或污泥)与线锯或导线锯(或污泥)波动,防止线锯或者可以通过将线锯或导线锯(或污泥)与线锯或引导槽的线锯(或污泥)从凹槽中防止出来。\n\n【0043】\n\n另外,由含有稀土合金的切割废料和在切割过程中产生的冷却剂的污泥组成的脏溶液,以及使用磁铁从污泥收集冷却液体。可以重复使用(例如,循环使用)。如上所述,由于主要由水组成的冷却剂具有低粘度,因此可以容易地分离切割废物。另外,通过分离稀土合金的切割液,冷却剂的废液处理可以容易而不损坏环境。此外,由于R-Fe-B基合金(R是含有Y的稀土元素),因此可以使用切割废物作为稀土合金的再循环材料。由于冷却剂主要由水组成,因此容易降低从切割废物中再生的稀土合金中所含的碳的量,从而可以获得用作稀土磁体的材料的原料。例如,JP-A-2002-36113中公开的方法可以使用例如分离切割围绕污泥的方法。\n\n【0044】\n\n当采用根据本发明实施例的切割方法时,可以切断稀土合金,因此用于定位磁头的音圈电机的小稀土磁体(例如,a厚度为0.5毫米)〜3.0 mm)可以高精度和有效地制造。\n\n【0045】\n\n在下文中,将参考附图更具体地描述根据本发明的切割稀土合金的方法的实施例。在本实施例中,将描述切割用于制造上述钕磁体的钕磁体烧结体的方法。\n\n【0046】\n\n将简要描述制造钕(ND-Fe-B系统)烧结磁体的方法。另外,例如,在美国专利No.5,522,517中详细公开了一种制备稀土合金作为磁体材料的方法。\n\n【0047】\n\n首先,在将原料金属精确称量到预定的组分比之后,将原料金属溶解在真空或氩气气氛中的高频熔炉中。将溶解的原料金属浇铸到水冷模中,形成预定组合物的原料合金。将原料合金粉碎,产生粒径为约3至4μm的细粉末。将该细粉末置于模具中并压制在磁场中。此时,在压制后,在必要后,将细粉末与润滑剂混合。接下来,可以进行约1000℃至约1200℃的烧结步骤以产生钕磁体烧结体。此后,进行约600℃的老化处理以改善磁体的矫顽力,并且完成稀土磁体烧结体的产生。烧结体的尺寸例如为30mm×50mm×50mm。\n\n【0048】\n\n将所得烧结体切割并形成从烧结体切割的多个薄板(有时称为基板或晶片)。通过抛光的晶体抛光处理在所获得的烧结体的每个薄板上进行,并且调节尺寸和形状,然后进行表面处理以提高长期可靠性。此后,在进行磁化过程之后,通过检查过程完成钕烧结磁体。可以在切割步骤之前进行磁化过程。\n\n【0049】\n\n接下来,将参考图1和图2更详细地描述根据本发明的实施例的切割方法。2至5。\n\n【0050】\n\n图。图2是表示根据本发明的一个实施例的适当用于切割稀土合金的方法的线锯装置100的示意性框图。\n\n【0051】\n\n线锯装置100具有三个主辊10a,10b和10c,以及一对卷轴线轴40a和40b。设置在用于容纳冷却剂的罐30的下部的主辊10a是驱动辊,并且设置在罐30的两侧上的主辊10b和10c是从动辊。线锯20在行进的同时从一个卷轴横桥40a缠绕在一个卷轴线轴40a周围,例如(所谓的往复驱动方法)。此时,新的线锯20可以通过使卷筒筒管的40A的卷绕时间大于另一卷轴线轴40B的卷绕时间来供应到卷轴筒管40A侧的同时向卷轴筒40A侧供应到卷轴20A侧。。电线锯20的行进速度例如在600m / min至1500米/分钟的范围内,并且提供新线的速率例如,例如,在1米/分钟的范围内到5米/分钟。\n\n【0052】\n\n在主辊10a,10b和10c之间,提供线锯20,例如,150列。为了确定导线锯20的行进位置,具有用于引导线锯20(例如,聚氨酯橡胶)引导电线锯20有机的凹槽(例如,大约0.6mm深,未示出)的聚合物层以引导电线锯20有机提供诸如层的聚合物层。线锯20的柱之间的间隔由该引导槽的间距确定。根据待从工件切割的板的厚度,将引导槽的间距设定。作为聚合物层,也可以使用由硅氧烷基弹性体等形成的无机聚合物层。\n\n【0053】\n\n在卷轴桥梁40A和40B附近,分别设置用于调节绕组位置的特拉索42A和42B。在从卷轴滚筒40a和40b到主辊10a的路径中,在每一侧设置有五个导辊44和一个张力辊46,并且导向线锯20,并且调节张力。线锯20的张力可以根据各种条件(切割长度,切割速度,行进速度等)适当地改变,但是被设定为例如20n至40 n的范围内。\n\n【0054】\n\n如上所述制造的烧结体工件50如下设置在线锯装置100中。\n\n【0055】\n\n多个工件50通过例如通过环氧粘合剂(未示出)通过碳基板52固定到铁工板54上并作为多个块组装。。块板54,工件50的每个块和碳基板52也通过粘合剂(未示出)彼此固定。在完成工件50的切割过程之后,碳基板52通过线锯20接收切割过程,直到工作板54的下降操作停止并且用作伪物以保护工件54。\n\n【0056】\n\n在本实施例中,每个块的尺寸设计成使得沿线锯20的行进方向测量的每个块的尺寸约为100mm。在本实施例中,工件50被分成如上所述的多个块,但是冷却剂的表面张力和冷却剂的表面张力应在行进方向上设定为线锯20的尺寸。它还随着旅行速度而变化。而且,构成一个块的工件50的尺寸和布置也根据每个工件50的尺寸而改变。考虑到这些,工件50可以适当地布置成最佳尺寸块。\n\n【0057】\n\n如上所述的工件50通过设置有电动机58的提升装置来降低,该提升装置压靠在行进线锯20上并切割。工件50的降低速度可以根据各种条件而变化,但是例如设置在20mm / hr至50mm / hr的范围内。\n\n【0058】\n\n存储在冷却剂罐60中的冷却剂通过管63通过排出泵62泵送。管63沿着方式分支到下管64和上管66中。下管64和上管66设置有阀门63b和63a,用于将冷却剂的流量调节到每个。下管64连接到设置在罐30的底部的下喷嘴64a,用于浸入切割部分。上管66连接到上喷嘴66a,66b和66c,用于从罐30的开口供应冷却剂,并且上喷嘴66d和66e分别设置成冷却主辊10b和10c。\n\n【0059】\n\n冷却剂从上喷嘴66a,66b和66c和下喷嘴64a提供,并且在至少切割过程中,如图2中的箭头f所示。如图2所示,冷却溶液是罐30的开口从部分保持溢出。从罐30溢出的冷却剂通过设置在罐30下方并积累的回收面包70被引导到回收罐72。回收的冷却剂经由循环管76送到冷却剂罐60,例如通过循环泵74。过滤器78设置在循环管76的中间,并分离回收的冷却剂中的切割废物。回收方法不限于此,并且可以提供用于使用磁力分离切割毛细管的机制(参见,JP-A-2002-36113)。\n\n【0060】\n\n接下来,参考图1.参照图3,将更详细地描述根据本发明的切割过程。\n\n【0061】\n\n罐30在与线锯20的行进方向交叉的侧壁的开口附近具有辅助壁32。辅助壁32由塑料板(例如,丙烯酸板)形成,并且在图1中的虚线中的卸载线锯的行进位置附近。当工件50降低以断开时,线锯20与线锯20接触时,导线锯20被静置,并且如图2中的实线所示。如图3所示,切割部分浸入其中罐30中的冷却溶液。此时,通过线锯20,线锯20切割辅助壁32并形成狭缝。当线锯20处于稳定状态时,偏转量是恒定的,并且线锯20通过穿过形成在辅助壁32上的狭缝的同时切割工件50。因此,在辅助壁32上形成的狭缝用于调节线锯20的行进位置,并且还有助于加工精度的稳定性。\n\n【0062】\n\n罐30具有例如约35μl(升),并且在切割过程中,冷却液从下喷嘴64a提供至约30l / min,上喷嘴66a,66b和66c供应从66℃到约90升,冷却剂以/ min的流速供应,并且总是从开口保持冷却剂。仅给予电线锯20的冷却剂,如图2所示。如图2所示,在切割期间浪费了线锯20,因此没有必要溢出冷却剂。\n\n虽然没有,但优选采用上述配置,以改善示例性钕磁体烧结体中的切屑的放电。\n\n【0063】\n\n为了提高切割乳房的可放电,减少切割部分附近的冷却剂中所含的切割废料量是有效的。为了获得足够的可放电,溢出1分钟的冷却剂的量优选为罐体积的50%以上。此外,优选的是,新的冷却剂从开口供应更多地超过罐30的底部。由于使用具有低粘度的冷却溶液作为主要成分,因此容易沉淀排出冷却剂进入冷却剂的切割废物,因此当许多冷却剂从罐30的底部供应时,沉淀的切割废物是不可取的,因为它导致漂浮在切割部分附近。\n\n【0064】\n\n还优选增加从开口供应的新鲜冷却剂的比例。也就是说,通过从罐30的开口供应冷却剂,通过将其从开口溢出,可以减小供应到切割部分的冷却剂中的切割废物量。此外,通过机械地冲洗连接到金属锯20的切割肉汤,也可以获得从罐30的开口供应的冷却剂的流动。\n\n【0065】\n\n此外,由于由线锯20形成的狭缝以外的部分用作罐30的侧壁,所以上述辅助壁32用于使冷却剂的液体表面S保持高。此外,使用喷嘴66b和66e在与罐30的开口的线锯20的行进方向交叉的方向上形成帘式冷却液流,并且通过抑制,冷却剂从罐30的开口溢出,待溢出的冷却剂的液体表面均高于罐30的辅助壁32,因此在切割部分周围提供了更多的冷却剂,并且冷却剂中的切割废料的量进一步可以降低。用于形成冷却液流的排出压力为0.2MPa(2kgf / cm2〜1.0 mpa(10 kgf / cm2优选在0.4MPa(4kgf / cm)的范围内2)〜0.6 mpa(6 kgf / cm2更优选地,它在范围内。如果排出压力低于该范围,则可能无法获得足够的效果,并且如果它高于该范围,则线锯20可以被带到电线锯20,因此可以是处理精度减少。\n\n【0066】\n\n此外,优选地将冷却剂排出到一对主辊10b和10c上,该对主辊10b和10c设置在罐30的两侧并调节线锯20的行驶位置。通过将冷却剂排出到这些主辊10b和10c,聚合物层(例如,氨基甲酸酯橡胶层)的温度,该温度具有用于引导设置在主辊10b和10c的表面上设置的线锯20的凹槽增加,线锯20或引导槽可以被洗涤或停滞,从而偏移线锯20的行进位置,或者导线锯20防止凹槽。能够。\n\n【0067】\n\n当加入含有水的冷却剂作为主要成分的冷却剂时,作为阴离子系统,脂肪酸衍生物如脂肪酸皂或环烷酸皂,或硫酸盐酯,例如长链酒精硫酸盐的硫酸化油植物油。磺酸型,非离子系统,如石油磺酸盐,聚氧乙烯烷基苯基醚和聚氧乙烯单脂肪酸酯,多元醇或山梨糖醇一水合物,或烷基胺体系如脂肪酸二乙醇酰胺可以是用过的。具体地,通过将​​2重量%的化学溶液型JP-0497N(由Castrol Co.,Ltd。制造)加入水,表面张力和动态摩擦系数可以在预定范围内调节。\n\n【0068】\n\n此外,合成型合成润滑剂使用合成溶液类型,合成乳液类型和合成溶解类型\n\n在这种情况下,合成溶液类型是优选的,具体而言,可以提及合成溶液9954(由Castrol Co.,Ltd。制造),#830和#870(由Yusilo Chemical Industry Co.,Ltd.制造)。两者都可以通过加入2%至10%重量的水来调节在合适的范围内。\n\n【0069】\n\n此外,通过含有抗生锈剂可以防止稀土合金的腐蚀。特别地,当切割R-Fe-B基稀土合金时,pH优选为8至11,更优选为9或更多pH。作为有机系统,有机系统是羧酸盐,例如油酸盐或苯甲酸盐,或胺如三乙醇胺,无机型,磷酸盐,硼酸盐,钼酸盐,碳酸盐。或者,可以使用碳酸盐。\n\n【0070】\n\n此外,作为有色金属防腐剂,诸如苯子三唑的氮化合物可以用作防腐剂,并且可以使用甲醛供体如六氢噻嗪作为防腐剂。\n\n【0071】\n\n硅氧烷乳液也可用作消泡剂。通过含有消泡剂,降低冷却剂的气泡,改善了冷却剂的渗透率,并且冷却效果增加,并且电线锯20的温度异常升高不太可能发生。\n\n【0072】\n\n将参考图1和图2描述适合于本实施例的线锯20的结构。图4和5(a)和5(b)。在图1中。如图4所示,从电线锯20的虚线线路所示的中心线简化下半部分。\n\n【0073】\n\n作为线锯20,优选使用其中金刚石磨粒24固定到芯线(钢琴线)22的外周表面的电线锯20。其中,优选使用酚醛树脂,环氧树脂或聚酰亚胺树脂作为树脂。这些树脂对钢琴线(硬钢丝)22的外周表面具有高的粘附强度,并且在润湿性(渗透率)上也具有高的润湿性,以至于上述冷却剂。\n\n【0074】\n\n作为合适的线锯20的具体实例,具有约40μm的平均粒径的金刚石磨料,其直径为约0.18mm,金刚石磨料的平均粒径为约40μm,是具有约40μm的金刚锯20用酚醛树脂层26固定约0.24mm的外径。从切割效率和切割废物(污泥)的观点来看,在纵向方向上彼此相邻的磨粒26之间的平均距离(轴向:平行于图4中的一个虚线)是优选的磨料晶粒的平均粒径D的150%以上且小于400%的范围。\n\n【0075】\n\n例如,如图1和图2所示。如图5A和5B所示,当线锯20的纵向的相邻研磨剂之间的平均距离L是磨粒的平均粒径D的200%或300%时。载荷施加到各个磨粒24减小,从而磨料颗粒24的异常下降和树脂层26的剥离,因此减小了断开的发生。也就是说,当相邻磨料之间的平均距离L为400%以上时,磨粒24的分布密度过于稀疏,并且施加到各个磨粒24在切割过程中的负荷太大,并且沉积异常是造成的。它将是。另一方面,当相邻磨料之间的平均距离L低于150%时,磨粒24的分布密度太稀疏,稍后描述的芯片袋的容量是不够的,并且切割的放电性能肉汤降低。结果,切削效率降低。\n\n【0076】\n\n图。图5(a)和5(b)示意性地示出了通过拉伸线锯20的外周表面(长度为约1.6mm的长度)和磨料颗粒24是均匀地分布磨料颗粒24的示例均匀分布。实际上,磨料颗粒24不均匀分布。然而,从这些图中理解,由于邻近磨料之间的平均距离L之间的差异的分布密度对磨粒的分布密度的半定量效果被这些图理解。实际电线锯20\n\n例如,可以从光学显微照片获得相邻磨料之间的平均距离L.\n\n【0077】\n\n此外,线锯20中的研磨颗粒22的突出速率优选为70%以下。当突出速率超过70%时,施加到研磨颗粒22的负荷不能被树脂层26充分支撑,从而容易产生树脂层的异常脱节和剥离。此外,从切割围绕的可放电的观点来看,磨粒的突出速率优选大于40%。如果突出速率为40%或更低,则在磨料晶粒22之间形成的空间(芯片袋)28的体积不足,并且可以减少切割肉汤的放电性能,结果是切割效率可能会减少。。不言而喻,芯片袋28的尺寸也取决于上述相邻的磨料距离。\n\n【0078】\n\n此外,在本实施例的切割方法中,使用具有40%或更少的树脂层26的偏差速率的线锯20。当偏差率超过40%时,施加到固定磨料颗粒24的树脂层26的负载是不均匀的,并且当使用线锯20进行切割时,树脂层26的局部强度不足。结果,容易产生磨粒24的异常下降和树脂层26的剥离。\n\n【0079】\n\n在下文中,示出了实验例,电线锯20的平均相邻距离L之间的关系,磨料颗粒的突出率,树脂层26的剥离,剥离,切割表面的表面精度(波纹)。解释。\n\n【0080】\n\n在下面的实验例中,块(行进方向长度为40mm的40mm,横向长度为50mm,厚度为30mm)的钕磁铁烧结体中的块在上述方法中是水平的上面描述的线锯装置100。切割以在方向上分解侧面。作为冷却剂,通过将尤维罗化学工业公司制造的WS-250B添加到水(自来水),将表面张力调节至34.6mN / m,动态摩擦系数为0.13。线锯20的行进速度为1100米/分钟,切割速率(厚度方向)为40mm /小时。\n\n【0081】\n\n线锯20的芯线(钢琴线)22的直径为0.18mm,磨料粒的平均粒径(金刚石磨粒)24为42μm。作为树脂,使用酚醛树脂使用树脂层26的20μm平均厚度(理想厚度)。从光学显微照片确定导线锯20的平均相邻距离L和磨料颗粒的突出率和磨料颗粒的偏差率。另外,使用长度为500mm的约10个横截面的结果。通过在处理钕磁体烧结体的块4小时后视动地观察导线锯20的外观来评估树脂层26的剥离。例如,当线锯20的长度为200μm时,剥离5mm或更大的剥离量增加了10μm或更大,并且剥离长度的累积为10米或更高,60米或更小。制造了“总表面发生”的情况。另外,在“少量”中,相邻剥离部分之间的距离约为20μm或更大的情况是“中断发生”。另外,使用接触粗糙度计测量切割表面的表面精度,并评价约25mm的宽度内的最大溶胀作为代表值。\n\n【0082】\n\n首先,表1示出了在线锯20的纵向上检查相邻磨料平均距离L的影响的效果。\n\n【0083】\n\n从表1中明显,相邻的磨料平均距离L不会产生树脂层26的剥离在磨粒的平均粒度的150%或更高且小于400%的范围内,以及表面精度切割表面也很好,良好,约为8μm。另一方面,如果相邻磨料颗粒之间的平均距离L小于平均粒径的150%,则切削效率低,并且难以实现40mm /小时的切口。另外,当相邻磨料颗粒之间的平均距离L大于平均粒径的400%时,产生树脂层26的剥离,并且当它为600%以上时,树脂层26被剥离并断开在线锯20的整个表面上也有。另外,当相邻磨料颗粒之间的平均距离L达到平均粒径的400%或更多,切割表面的表面精度变为8μm以上的大值。从这些东西中,电线锯相邻磨料之间的平均距离L.\n\n可以看出,线锯20的寿命可以通过设定在磨料晶粒的平均粒度的150%或更高且小于400%的范围内,并且足够的切割表面的表面精度获得。\n\n【0084】\n\n【表格1】\n\n\n\n【0085】\n\n接下来,表2显示了检查磨粒24的突出速率影响的结果。\n\n【0086】\n\n从表2中可以看出,当使用具有71%以上的突出速率的线锯20时,树脂层26的剥离开始产生,并且具有大于83%的突出速率的线锯20是用过的。另外,当使用具有71%以上的突出速率的线锯20时,切割表面的表面精度(波动)变为10μm或更大。当使用具有60%或更小的突出速率的线锯20时,更优选的是,因为切割表面的表面精度可以被抑制到8μm或更小。然而,使用具有40%或更小的突出速率的线锯,在不产生树脂层的同时可以减小切割效率并且获得足够的切割表面的表面精度。因此,优选突出速率为40%以上。\n\n【0087】\n\n[表2]\n\n\n\n【0088】\n\n接下来,表3示出了检查树脂层26的偏差率的影响的结果。\n\n【0089】\n\n如表3所示,当使用具有50%以上的偏差因子的线锯20时,产生树脂层26的剥离,并且使用重量比为100%以上的线锯20。另一方面,当使用具有40%或更小的Devlus比的线锯20时,未产生树脂层26的剥离,切割表面的表面精度小于4μm。更优选的是,偏差率为30%或更少,但甚至可以用于足够的批量生产,即使在40%或更少的情况下也可用于足够的批量生产。\n\n【0090】\n\n线锯20的树脂层26的剥离和断开也取决于线锯20的张力,该线锯20在辊之间行驶。当线锯20的张力为30n时,上述结果是当线锯的张力为25 n或更大时可以获得相同的结果,并且可以获得相同的结果。\n\n【0091】\n\n[表3]\n\n\n\n【0092】\n\n接下来,将描述使用上述线锯的线锯装置100的主辊10a,10b和10c的优选结构。\n\n【0093】\n\n当使用主要由水组成的冷却剂时,线锯速率增加(即在较短的时间内被破坏),并且处理精度低于使用油性冷却剂的情况下降的问题。。作为各种检查本发明人的结果,如图2所示。如图7所示,形成在辊10a,10b和10c的聚合物层10p中的引导槽10g的横截面形状是10g的一对斜坡通过采用角度(下文中,称为“倾斜角度(α))采用11°在辊10a的径向10r(下文中称为,称为“倾斜角度(α)”)。发现可以获得足够的处理精度。进一步优选的是,倾斜角度为30°或更大,35°或更小。\n\n【0094】\n\n如图所示,优选的是,引导槽10g的一对倾斜10s都相对于辊10a的径向10r具有上述范围的倾斜角,但是一对斜坡10s中的至少一个。如果提供上述范围的倾斜角度,可以获得抑制断开的发生的效果,并且可以获得足够的处理精度。\n\n【0095】\n\n通常,如图2所示。如图7所示,采用该结构,其中引导槽10g的斜面10g是相对于辊的径向10R的倾斜角为45°或更大的倾斜角。这是从引导槽10g有效地完全放电污泥,特别是稀土合金导致脆性破坏\n\n由于切削抗性高,并且特定等级高,因为它具有导致主相和延展性破坏的晶界相,污泥没有排出,因此倾斜角度为45°以增加污泥排放。它是极好的。\n\n【0096】\n\n然而,由于检查发明人的结果,当斜率10s的倾斜角度大于45°时,断开发生率不会降低,并且发现处理精度降低存在问题。在下文中,将参考图4描述这种现象。如参考图1所述,电线锯20多路复用以形成彼此平行的多个行进线,如图2所示。由于形成一排行进线的线锯20的位置由形成在每个辊10a,10b和10c中的引导槽10g限定,因此可以将其移到行进线旁边的行进线上线锯20,线锯20倾斜地乘以引导槽10g。该倾斜线锯20从引导槽10g的斜面10s扭曲。另外,电线锯20将接收更大的弯曲动力。\n\n【0097】\n\n图。图8是示出辊子的引导槽的斜面10s与线锯的扭转角之间的关系的曲线图。扭转角ω表示线锯20与从辊上接收的扭曲力成比例,并且当扭转角ω= 360°时,线锯就被扭曲一次。图2中所示的结果。根据下面描述的配置的机械模型计算确定图8所示的图8。斜面10s的倾斜角度等于两侧的斜坡。结果显示。\n\n【0098】\n\n在一对辊子(图1中的辊10b和10d)期间布置在450mm的间隔(跨度),线锯20以张力30 n(3kgf)设置。新的线路供电量为2米/分钟,在120秒周期中往复运动。此时,在被驱动约190次之后,线锯20将从辊子被逃脱。\n\n【0099】\n\n这里,由于各种实验,当线锯被扭曲为1跨度(450mm)之间的5倍(ω= 1800°)时,Twiraso 20在200次行驶时扭曲约500次。即,大约200×5倍= 1000次,约50%累积为实际扭曲。因此,图2中的垂直轴的扭转角ω.图8表示通过与从机械模型计算获得的扭曲角度乘以0.5来获得的值。另外,当在线锯20中实际累积的扭转角度是从静态扭曲应力测试的1800°(扭曲)时,估计线锯被断裂,概率为10%。\n\n【0100】\n\n从图1中可以看出。如图8所示,随着凹槽10g的倾斜角α增加,扭力(扭转角)单调地减小。仅仅思考破碎的功率,如果线锯20薄(直径d = 0.19mm),则倾斜角度为10°或更大,如果厚(直径为0.25mm),则倾斜角度为25°或更大(直径为0.25mm)。换句话说,可以抑制线锯20的破损。\n\n【0101】\n\n然而,根据实验,当使用任何导线锯20时,当倾斜角达到45°或更大时,入射率的进入率不会降低。另外,当倾斜角度为45°或更大时,存在处理精度降低的问题。\n\n【0102】\n\n当倾斜角度增加时,引导槽10g的宽度10w(参见图6)变大,并且线锯20在10g引导槽中摇动,并且为了飞到相邻的引导槽10g ,认为线锯20断开,因为施加到线锯20的张力和扭转力变得不均匀,并且发生局部大应力。此外,由于线锯20不稳定地在引导槽10g中行进,因此认为处理精度降低。另外,在实验中,氨基甲酸酯橡胶层用作聚合物层10p,并且冷却剂用作冷却剂。\n\n使用了由学术工程有限公司制造的约10%的水溶液。另外,切割与上述实验例的相同稀土烧结磁体的工件。\n\n【0103】\n\n根据上述结果,引导槽10g的斜面10s的倾斜角度优选小于25°或更大且小于45°。为了尽可能地抑制线锯20的断裂,倾斜角优选为30°或更大,使得扭转功率降低,并且为了获得高处理精度,倾斜角度为35°或更少是优选的。此外,优选的是,引导槽10g的底部10b处理略微小于线锯20的半径的曲率半径。\n\n【0104】\n\n使用上述电线锯装置100,可以根据使用上述实施例的电线锯20的效果进一步增加导线锯20的寿命。特别地,当作为辊子之间的距离短而产生相对大的扭转力时,本实施例的效果很大。\n\n【0105】\n\n尽管已经用示出了线锯装置100描述了本发明的实施例,但是本发明不限于此,并且应用于使用单个的无限型导线锯装置(例如,JP-A-11-198018)卷轴梭芯可以做到。\n\n【0106】\n\n【发明效果】\n\n根据本发明,使用主要由电线锯装置中的水的冷却剂切割稀土合金,可以增加钢丝锯的寿命。因此,可以使用与水作为主要成分的环境友好的冷却剂有效地将稀土烧结磁体有效地断开稀土烧结磁铁。也就是说,可以减少稀土烧结磁体的制造成本。\n\n[简要描述;简介]\n\n【图1】(a)是用于说明线锯的磨料突出速率的定义的示意性横截面图,并且(b)是用于说明线锯的偏差比的定义的示意性剖视图。\n\n【图2】图3是表示适合用于执行本发明实施例的稀土合金的切割方法的线锯装置100的示意图。\n\n图3.图3是表示图1所示的线锯装置100的切割部分附近的结构的示意图。\n\n图4.图3是示意性地示出了线锯20的横截面结构,其适合用于执行本发明实施例的稀土合金的切割方法。\n\n图5.(a)和(b)示意性地示出了根据本发明的适当用于执行稀土合金的切割方法的线锯20中的磨料分布,并且(a)是相邻的磨粒平均距离l表示磨粒的平均粒径的200%,(B)显示出300%的情况。\n\n6.图3是示意性地示出了辊的横截面结构,其适合用于线锯装置100和200。\n\n图7.图3是示意性地示出了传统辊的横截面结构的图。\n\n图8图3是表示辊子的引导槽的斜面10s的倾斜角与线锯扭转角度之间的关系的曲线图。\n\n[标志的说明]\n\n10A,10B,10C主洛杉矶\n\n20丝锯\n\n22芯线\n\n24磨粒\n\n26树脂层\n\n28芯片袋\n\n30坦克\n\n40a,40b卷轴筒管\n\n42a,42b traversa\n\n50个工作\n\n60个冷却罐\n\n70恢复面包\n\n80A,80B喷雾设备');
INSERT INTO `os_patent_instruction_text` VALUES (12983, 22812, 'BACKGROUND OF THE INVENTION\n\n[0001]1. Field of the Invention\n\n[0002]The present invention relates to a method of cutting a rare-earth alloy and more particularly, the present invention relates to a method of cutting a rare-earth alloy with a wire saw, which is obtained by fixing abrasive grains on a core wire.\n\n[0003]2. Description of the Related Art\n\n[0004]A rare-earth alloy is used as a material to make a strong magnet. A rare-earth magnet, obtained by magnetizing a rare-earth alloy, can be used effectively as a magnet for a voice coil motor, which is used to position a magnetic head in a magnetic recorder, for example.\n\n[0005]In the prior art, a rare-earth alloy material (e.g., in the form of an ingot or a sintered body) is often cut by a technique of slicing the material with a rotating slicing blade, for example. In this slicing blade cutting process, however, the cutting edge is relatively thick, thus requiring a lot of machining allowance. As a result, the yield of the rare-earth alloy material is so low that it increases the cost of resultant rare-earth alloy products (e.g., rare-earth magnets).\n\n[0006]A wire saw cutting process is known as a cutting method that requires smaller machining allowance than the slicing blade cutting process does. For example, Japanese Laid-Open Publication No. 11-198020 discloses that a hard and brittle material such as silicon, glass, neodymium or ferrite may be cut with a wire saw, which is obtained by fixing superabrasive grains on the outer surface of a high-hardness core wire with a bonding layer (which will be referred to herein as a “fixed abrasive wire saw”).\n\n[0007]If a number of plates with a predetermined thickness can be obtained at the same time by cutting a rare-earth alloy material with such a fixed abrasive wire saw with small machining allowance, then the manufacturing cost of rare-earth magnets can be reduced significantly. However, nobody has ever reported that a rare-earth alloy could be cut successfully with such a fixed abrasive wire saw at a mass-producible level.\n\n[0008]The present inventors carried out extensive research on this phenomenon and discovered the major cause of this problem in a significant difference in mechanical property between a rare-earth alloy produced by a sintering process (which will be referred to herein as a “rare-earth sintered alloy”) and silicon, for example. More specifically, a rare-earth sintered alloy includes an overall hard and brittle main phase (i.e., R2Fe14B crystal grains) and a grain boundary phase that causes ductile fracture. Accordingly, unlike a hard and brittle material such as silicon, the rare-earth sintered alloy is not so easy to cut. That is to say, compared with cutting silicon or any other hard and brittle material, higher cutting resistance is produced and a huge quantity of heat is generated, too. Also, the specific gravity of a rare-earth alloy is approximately 7.5, which is much higher than that of silicon or any other hard and brittle material. For that reason, cutting debris (or sludge), produced by the machining process, cannot be easily flushed away from the machined portion.\n\n[0009]Thus, to cut a rare-earth alloy with high machining accuracy and efficiency, it is necessary to not only decrease the cutting resistance sufficiently but also efficiently dissipate the heat to be generated during the cutting process (i.e., efficiently cool the machined portion). Furthermore, it is also necessary to efficiently flush away the cutting debris produced by the cutting process.\n\n[0010]For that purpose, by supplying the rare-earth alloy machined portion with plenty of highly lubricating coolant (which will also be referred to herein as a “cutting fluid”), the cutting resistance can be decreased and the heat generated during the cutting process can be dissipated efficiently. The present inventors discovered and confirmed via experiments that if a wire saw is wet with a sufficient amount of an oil coolant, then the traveling wire saw can supply a narrow machined portion with plenty of that coolant.\n\n[0011]When such an oil coolant is used, however, it costs a lot to process its waste so as not to create any environmental damage and it is difficult to recycle the waste or cutting debris because the cutting debris is hard to separate from the waste. In view of these considerations, water (or an aqueous coolant) is preferably used as the coolant. However, if water is used as a coolant, then it is impossible to keep a sufficient amount of water deposited on the traveling wire saw because water has low viscosity (with a kinematic viscosity of 1.0 mm2/s). As a result, even if the wire saw was wet with water, a sufficient amount of water could not be supplied to the machined portion.\n\n[0012]Japanese Laid-Open Publication No. 11-198020 discloses that by moving the wire saw through a coolant overflowing from a coolant vessel, the coolant can be kept deposited on the wire saw just as intended even in a situation where a fixed abrasive wire saw needs to travel at a high velocity (e.g., at 2,000 m/min). However, the present inventors discovered via experiments that even when a rare-earth alloy was cut with a wire saw traveling through such overflowing water (as disclosed in Japanese Laid-Open Publication No. 11-198020, for example), the abrasive grains still dropped off, the resin layer peeled off, or the wire saw snapped in a worst case scenario. These inconveniences also happened even when the wire saw traveled at a velocity of about 800 m/min.\n\nSUMMARY OF THE INVENTION\n\n[0013]In order to overcome the problems described above, preferred embodiments of the present invention extend the life of a wire saw when a rare-earth alloy is cut with a wire saw machine using a coolant mainly composed of water.\n\n[0014]A rare-earth alloy cutting method according to preferred embodiments of the present invention is a method of cutting a rare-earth alloy with a wire saw obtained by fixing abrasive grains on a core wire with a resin layer. The method includes the step of moving the wire saw while a portion of the rare-earth alloy being machined with the wire saw is immersed in a coolant, which is mainly composed of water and has a surface tension of about 25 mN/m to about 60 mN/m at about 25° C., thereby cutting the rare-earth alloy. In the wire saw, an average distance between two of the abrasive grains, which are adjacent to each other in a length direction, is about 150% to less than about 400% of the average grain size of the abrasive grains, an average height of portions of the abrasive grains, protruding from the surface of the resin layer, is about 70% or less of the average grain size of the abrasive grains, and a thickness deviation percentage of the resin layer with respect to the core wire is about 40%, thereby achieving the advantages described above.\n\n[0015]A coolant mainly composed of water for use in another rare-earth alloy cutting method according to a preferred embodiment of the present invention may also be specified by its kinetic friction coefficient, not the surface tension thereof. In that case, a coolant, having a kinetic friction coefficient of about 0.1 to about 0.3 at about 25° C. with respect to the rare-earth alloy, may be used.\n\n[0016]The average grain size D of the abrasive grains preferably satisfies 20 μm≦D≦60 μm.\n\n[0017]The core wire preferably has a diameter of about 0.15 mm to about 0.2 mm.\n\n[0018]In a preferred embodiment, the step of moving the wire saw includes the step of moving the wire saw on a plurality of rollers. Each of the plurality of rollers preferably includes a polymer layer on which a guide groove is provided, the guide groove has a pair of sloped surfaces, at least one of which defines an angle of about 25 degrees to less than about 45 degrees with respect to a radial direction of the roller, and the wire is passed between the sloped surfaces.\n\n[0019]The resin layer is preferably made of a phenol resin, an epoxy resin or a polyimide resin.\n\n[0020]In a preferred embodiment, the rare-earth alloy is an R—Fe—B based rare-earth sintered alloy and may be an Nd—Fe—B based rare-earth sintered alloy.\n\n[0021]Other features, elements, steps, characteristics and advantages of the present invention will become more apparent from the following detailed description of preferred embodiments of the present invention with reference to the attached drawings.\n\nBRIEF DESCRIPTION OF THE DRAWINGS\n\n[0022]FIG. 1A is a schematic cross-sectional view showing how to define an abrasive grain protruding ratio for a wire saw, and FIG. 1B is a schematic cross-sectional view showing how to define a thickness deviation percentage for a wire saw.\n\n[0023]FIG. 2 is a schematic representation illustrating a wire saw machine, which can be used effectively to carry out a rare-earth alloy cutting method according to a preferred embodiment of the present invention.\n\n[0024]FIG. 3 is a schematic representation illustrating a configuration for the wire saw machine shown in FIGS. 1A and 1B in the vicinity of the machined portion.\n\n[0025]FIG. 4 schematically illustrates a cross-sectional structure for the wire saw that can be used effectively to carry out the rare-earth alloy cutting method of a preferred embodiment of the present invention.\n\n[0026]FIGS. 5A and 5B schematically illustrate the distributions of abrasive grains on the wire saw that can be used effectively to carry out the rare-earth alloy cutting method of a preferred embodiment of the present invention wherein FIG. 5A shows a situation where the average distance L between two adjacent abrasive grains is about 200% of the average grain size of the abrasive grains, and FIG. 5B shows a situation where the average distance L is about 300% of the average grain size.\n\n[0027]FIG. 6 schematically illustrates a cross-sectional structures for rollers that are preferably used in the wire saw machines of preferred embodiments of the present invention.\n\n[0028]FIG. 7 schematically illustrates a cross-sectional structure for a conventional roller.\n\n[0029]FIG. 8 is a graph showing relationships between the tilt angle of the slope of the roller guide groove and the wire saw torsional angle.\n\nDETAILED DESCRIPTION OF PREFERRED EMBODIMENTS\n\n[0030]A rare-earth alloy cutting method according to a preferred embodiment of the present invention uses a wire saw obtained by fixing abrasive grains (which are preferably diamond abrasive grains) on a core wire (which is preferably a piano wire) with a resin layer. The method includes the step of moving the wire saw while a portion of the rare-earth alloy being machined with the wire saw is immersed in a coolant, which preferably is mainly composed of water and which preferably has a surface tension of about 25 mN/m to about 60 mN/m at about 25° C., thereby cutting the rare-earth alloy. In the wire saw, an average distance between two of the abrasive grains, which are adjacent to each other in a length direction (i.e., the wire saw traveling direction), is preferably about 150% to less than about 400% of the average grain size of the abrasive grains, an average height of portions of the abrasive grains, protruding from the surface of the resin layer, is preferably about 70% or less of the average grain size of the abrasive grains, and a thickness deviation percentage of the resin layer with respect to the core wire is preferably about 40%. Optionally, a coolant having a kinetic friction coefficient of about 0.1 to about 0.3 with respect to the rare-earth alloy at about 25° C. may also be used as the coolant.\n\n[0031]In the rare-earth alloy cutting method of this preferred embodiment of the present invention, the process step of cutting a rare-earth alloy with a fixed abrasive wire saw is carried out with its machined portion immersed in a coolant having a surface tension of about 25 mN/m to about 60 mN/m (i.e., about 25 dyn/cm to about 60 dyn/cm) at about 25° C. Thus, the wire saw can be cooled efficiently. A coolant having a surface tension that falls within this range exhibits higher wettability (i.e., conformability) with respect to the rare-earth alloy and/or wire saw than water does. For that reason, the coolant would penetrate the machined portion (i.e., the portion where the rare-earth alloy and wire saw contact each other, where the rare-earth alloy is being machined and which will be also referred to herein as a “machined groove”) efficiently enough. The coolant mainly composed of water naturally has a higher specific heat than an oil coolant (e.g., a mineral oil), and therefore, achieves higher cooling efficiency. As used herein, the “coolant mainly composed of water” refers to a coolant, of which at least approximately 70 wt % is water.\n\n[0032]A preferred coolant, which is used effectively in the rare-earth alloy cutting method of preferred embodiments of the present invention, can also be determined by its kinetic friction coefficient with respect to the rare-earth alloy. Specifically, a coolant having a kinetic friction coefficient of about 0.1 to about 0.3 at approximately 25° C. achieves the same functions and effects as a coolant having a surface tension that falls within the range specified above. The surface tension is regarded as an index to the permeability of the coolant with respect to the machined portion. On the other hand, the kinetic friction coefficient is regarded as an index to the degree of lubricity produced by the coolant in the machined portion. It is also known that there is a qualitative correlation between the surface tension and the kinetic friction coefficient.\n\n[0033]The surface tension of the coolant is measured with a well-known DuNouy Tensiometer. Also, the kinetic friction coefficient of the coolant with respect to the rare-earth alloy is measured with a Masuda\'s “Four-ball Friction Tester”, which is often used as a basic tester in Japan. The values of both the surface tension and kinetic friction coefficient at about 25° C. are preferably adopted herein as parameters characterizing the coolant.\n\n[0034]It should be noted that the kinetic friction coefficients that will be cited in the specific examples to be described later were obtained with a four-ball friction tester including iron balls. The R—Fe—B based rare-earth alloy to be adopted as an example (where R is one of the rare-earth elements including Y and which is an alloy including an Nd2Fe14B intermetallic compound as a main phase, for example) includes iron at a higher percentage than any other constituent element thereof. Accordingly, the kinetic friction coefficient of the coolant, obtained with the iron balls, should be a well-approximated kinetic friction coefficient with respect to the rare-earth alloy. The present inventors actually confirmed this point via experiments. The composition and manufacturing process of a rare-earth alloy that can be used effectively as a material for a rare-earth magnet are disclosed in U.S. Pat. Nos. 4,770,723 and 4,792,368, for example. In a typical composition of an R—Fe—B based rare-earth alloy, Nd or Pr is often used as R, a portion of Fe may be replaced with a transition element (such as Co), and a portion of B may be replaced with C.\n\n[0035]The coolant for use in the cutting process of preferred embodiments of the present invention is determined by either the surface tension or the kinetic friction coefficient at approximately 25° C. However, the temperature of the coolant is not always about 25° C. during its actual use. Nevertheless, to achieve the effects and advantages of preferred embodiments of the present invention, the temperature of the coolant to be used is preferably controlled to fall within the range of about 15° C. to about 35° C., more preferably within the range of about 20° C. to about 30° C., and even more preferably within the range of about 23° C. to about 28° C. As is well known in the art, the surface tension and kinetic friction coefficient of a coolant depend on the temperature. Accordingly, if the temperature of the coolant actually used deviates from these preferred temperature ranges by a large amount, then the surface tension and kinetic friction coefficient of the coolant would also substantially deviate from their preferred ranges. As a result, the cooling efficiency or cutting efficiency would decline significantly.\n\n[0036]The coolant may be prepared by adding either a surfactant or a synthetic lubricant (i.e., a so-called “synthetic”) to water. A predetermined surface tension or kinetic friction coefficient is achievable by changing the type or the amount of the additive appropriately. In addition, if such a coolant mainly composed of water is used, then the cutting debris of the rare-earth alloy can be easily separated from the cutting-created sludge with a magnet and the coolant can be recycled because the coolant has a relatively low viscosity. It is also possible to prevent the coolant waste disposal process from having harmful effects on natural environments. Furthermore, the amount of carbon included in the sludge can be reduced. As a result, the magnet to be made of the cutting debris collected from the sludge can have improved magnetic properties.\n\n[0037]If the workpiece is cut with a wire saw traveling at a high velocity, then the coolant may foam to decrease the cooling efficiency unintentionally. However, by using a coolant including an antifoaming agent, such decreases in cooling efficiency due to foaming of the coolant can be minimized. Furthermore, when a coolant with a PH of about 8 to about 11 is used, the corrosion of the rare-earth alloy can be minimized. More preferably, a coolant with a PH of about 9 or more is preferably used. Moreover, by using a coolant including a rust preventive material, the oxidation of the rare-earth alloy can be reduced significantly. The amounts of these additives may be appropriately adjusted with the type and cutting conditions of the rare-earth alloy and other factors taken into account.\n\n[0038]A wire saw, on which diamond abrasive grains are fixed with a resin layer, is preferably used as the wire saw. More specifically, a wire saw, obtained by fixing diamond abrasive grains on the outer surface of a core wire (which is preferably a piano wire) with a resin, is preferably used. Among other things, a phenol resin, an epoxy resin and a polyimide resin are particularly preferred. The reasons are as follows. First, these resins show not only high bond strengths with respect to the outer surface of the piano wire (i.e., hard-drawn wire) but also excellent wettability (i.e., permeability) with respect to the coolant as will be described later. If necessary, a filler (such as SiC or Al2O3) may be added to the resin (see Japanese Patent Publication No. 3078020, for example). Secondly, the wire saw on which abrasive grains are fixed with a resin layer is less expensive than a wire saw to be produced by an electrodeposition process, thus reducing the cost of cutting a rare-earth alloy. It should be noted that the core wire of the wire saw does not have to be a piano wire but may also be made of an Ni—Cr alloy, an Fe—Ni alloy or any other suitable alloy, W, Mo or any other suitable refractory metal, or a bundle of high-strength fibers such as nylon fibers. Also, the material of the abrasive grains is not limited to diamond, either, but may be SiC, B, C or CBN (cubic boron nitride), for example.\n\n[0039]By using the coolant described above, the abnormal increase in the temperature of the wire saw during the cutting process can be reduced significantly compared with the situation where water is used as the coolant. Thus, derailing of the abrasive grains, peeling of the resin layer and snapping of the wire saw can be minimized. In the rare-earth alloy cutting method of this preferred embodiment of the present invention, not only the coolant but also the wire saw are selected appropriately, thus making it possible to use the wire saw for even a longer time and further reduction of the manufacturing cost. As will be described later by way of experimental examples, the abnormal derailing, resin peeling and snapping can be minimized by using a wire saw in which an average distance between two abrasive grains, which are adjacent to each other in the length direction (i.e., the traveling direction), is preferably about 150% to less than about 400% of the average grain size D of the abrasive grains, an average height of portions of the abrasive grains, protruding from the surface of the resin layer, is preferably about 70% or less of the average grain size D of the abrasive grains, and a thickness deviation percentage of the resin layer with respect to the core wire is preferably about 40%.\n\n[0040]As will be described later by way of experimental examples, the present inventors presume, based on the results of extensive research, that by adjusting not only the density of the abrasive grains, fixed on the outer surface of the core wire with the resin layer, as measured in the length direction of the wire saw and the average height of the portions of the abrasive grains protruding from the resin layer (which will be referred to herein as a “protrusion percentage”) but also the thickness deviation percentage of the resin layer with respect to the core wire, the cutting debris (or sludge) flushing capability could be maintained within a good range and the load to be placed on the respective abrasive grains during the cutting process would become uniform, thus minimizing the abnormal derailing, resin peeling and snapping.\n\n[0041]Hereinafter, the protrusion percentage Pr and thickness deviation percentage Td, characterizing the wire saw to be used in the cutting method of this preferred embodiment of the present invention, will be defined with reference to FIGS. 1A and 1B.\n\n[0042]In the wire saw 20 shown in FIG. 1A, abrasive grains 24 are fixed on the outer surface of a core wire 22 with a resin layer 26. Supposing the average grain size of the abrasive grains 24 is D and the height of the portions of the abrasive grains 24 protruding from the resin layer 26 (i.e., the protrusion height) is P, the protrusion percentage Pr (%) is defined as the ratio of the protrusion height P to the average grain size D. That is to say, Pr=(P/D)×100. The protrusion percentage Pr can be obtained from optical micrographs showing the cross sections of the wire saw 20, for example.\n\n[0043]As disclosed in Japanese Patent Publication No. 3078020, the wire saw 20 may be made by coating the outer surface of a core wire with an abrasive grain dispersed resin (to which a solvent is added as needed) by a method called the “enamel method”, for example. In this case, unless the thickness of the resin layer is adjusted sufficiently, the thickness of the resin layer 26 may become non-uniform with respect to the core wire 22 on a cross section including the diameter of the wire saw 20 (or core wire 22) as schematically shown in FIG. 1B. To evaluate such a deviation in the thickness of the resin layer 26 quantitatively, the thickness deviation percentage Td (%) is defined as follows.\n\n[0044]Supposing the radius of the core wire 22 is Rw, the minimum thickness of the resin layer 26 is Trl and the maximum thickness of the resin layer 26 is Trh, the thickness deviation percentage Td is given by (Trh−Trl)/{(Trh+Trl)/2}. Optionally, the denominator (Trh+Trl)/2 may be regarded as the average thickness of the resin layer 26. The thickness deviation percentage Td is obtained by actually measuring the radius Rw of the core wire 22 and the minimum and maximum thicknesses Trl and Trh of the resin layer 26. The thicknesses of the resin layer 26 can be obtained from optical micrographs showing the cross sections of the wire saw 20, for example. Naturally, the ideal thickness deviation percentage of the resin layer 26 is 0%.\n\n[0045]Also, as disclosed in Japanese Patent Publication No. 3078020, a wire saw 20 satisfying the conditions described above can be obtained by controlling the thickness of the resin layer with a floating dice in the process step of applying the resin by the enamel method. Such a wire saw 20 can be supplied from a general wire saw manufacturer (e.g., Allied Material Corp.) if the specifications described above are designated clearly.\n\n[0046]To achieve the effect of small machining allowance, the wire saw 20 preferably has an outside diameter of about 0.3 mm or less, more preferably about 0.25 mm or less. The lower limit of the outside diameter of the wire saw 20 is defined so as to achieve sufficient strength. In addition, to fix abrasive grains of a predetermined size with sufficient strength, a core wire 22 with a diameter of about 0.12 mm to about 0.20 mm, more preferably about 0.15 mm to about 0.20 mm, is preferably used.\n\n[0047]In view of the cutting efficiency, the average grain size D of the abrasive grains 24 preferably satisfies 20 μm≦D≦60 μm, more preferably satisfies 30 μm≦D≦60 μm, and most preferably satisfies 40 μm≦D≦60 μm.\n\n[0048]By using a wire saw 20 according to a preferred embodiment of the present invention, good cutting efficiency and debris flushing capability are achieved. Thus, a workpiece can be machined even if the wire saw is allowed to travel at a relatively high velocity (e.g., at 1,000 m/min) and the wire saw can be used for a longer time than the conventional one. In addition, since the rare-earth alloy can be cooled efficiently with the coolant described above, the rare-earth alloy can be constantly machined for a long time with good machining accuracy. When the coolant mainly composed of water is used, the cutting efficiency can be optimized by setting the traveling velocity at about 20–30% higher (e.g., in the range of about 1,100 m/min to about 1,200 m/min) than the situation where an oil coolant is used.\n\n[0049]The coolant mainly composed of water for use in the cutting method of preferred embodiments of the present invention preferably has low viscosity (with a kinematic viscosity of about 1 mm2/s). Accordingly, the resultant cutting debris flushing capability is lower than that achieved by an oil coolant (which usually has a kinematic viscosity of 5 mm2/s or more). Thus, in order to increase the cutting debris flushing capability, the machined portion is preferably kept immersed in the coolant stored in the vessel in the cutting process. In addition, the coolant is preferably supplied into the vessel not only through its bottom but also from its opening such that the coolant is always overflowing from the opening of the vessel.\n\n[0050]The cutting debris, which has been flushed into the low-viscosity coolant, easily precipitates and just a small amount of cutting debris is floating around the opening of the vessel. To cut the workpiece with the machined portion immersed in the coolant, the wire saw needs to be arranged so as to travel through the coolant in the vicinity of the opening of the vessel. Accordingly, the wire saw travels in the coolant including little cutting debris, and the machined portion is supplied with the coolant including little cutting debris. In particular, if the coolant is also supplied from the vessel opening so as to be always overflowing from the opening, the coolant supplied to the machined portion can have a decreased amount of cutting debris. Furthermore, the cutting debris that has been deposited on the wire saw can also be washed away mechanically with the flow of the coolant supplied from the vessel opening. The quantity of the coolant overflowing per minute is preferably about 50% or more of the volume of the vessel. Also, the amount of the coolant supplied from the opening is preferably greater than that of the coolant supplied through the bottom of the vessel.\n\n[0051]Furthermore, if a curtain-like flow of the coolant (or the air) is formed over the four sides of the vessel opening intersecting with the wire saw traveling direction and if the surface of the overflowing coolant is kept higher than the vessel walls by reducing the amount of the coolant overflowing from the vessel opening, then an even greater quantity of coolant is supplied to the area around the machined portion. As a result, the amount of the cutting debris in the coolant can be further decreased. A discharge pressure to form the coolant flow is preferably in the range of about 0.2 MPa (i.e., about 2 kgf/cm2) to about 1.0 MPa (i.e., about 10 kgf/cm2), more preferably in the range of about 0.4 MPa (i.e., about 4 kgf/cm2) to about 0.6 MPa (i.e., about 6 kgf/cm2). The reasons are as follows. Specifically, if the discharge pressure is lower than these ranges, sufficient effects may not be achieved. However, if the discharge pressure exceeds these ranges, then the wire saw flexes so much that the machining accuracy may decrease.\n\n[0052]Also, among a plurality of main rollers provided to make the wire saw travel thereon, two main rollers, arranged on both sides of the vessel to regulate the traveling path of the wire saw, are also preferably supplied with a coolant that has been discharged. By discharging the coolant to these main rollers, the increase in the temperature of a polymer layer (e.g., an organic polymer layer such as a urethane rubber layer), which is provided on the surface of the main rollers so as to have a wire saw guide groove, can be minimized. In addition, the cutting debris (or sludge) that has been deposited or left either on the wire saw or in the guide groove can also be washed away, thereby preventing the wire saw traveling path from deviating or the wire saw from derailing from the groove.\n\n[0053]Also, by collecting a dirty liquid, including the sludge with the rare-earth alloy cutting debris produced by the cutting process and the coolants, and by getting the rare-earth alloy cutting debris separated out from the sludge by a magnet, the coolants can be recycled (e.g., used cyclically). As described above, since the coolant mainly composed of water has low viscosity, the cutting debris can be easily sorted out therefrom. Also, by sorting out the rare-earth alloy cutting debris, the coolant waste can be disposed of easily without doing any damage on the environment. Furthermore, carbon, which is not easily separable from an R—Fe—B based alloy (where R is one of the rare-earth elements that include Y), can be reduced and the cutting debris may also be used as a recycling material for a rare-earth alloy. Since the coolant preferably is mainly composed of water, it is easy to decrease the amount of carbon included in the rare-earth alloy that has been recycled from the cutting debris. Thus, a raw material that may be used as a material for a rare-earth magnet can be obtained. As a method of sorting out the cutting debris from the sludge, the method disclosed by the applicant of the present application in Japanese Laid-Open Publication No. 2002-36113 may be used.\n\n[0054]By adopting the cutting method of preferred embodiments of the present invention, a rare-earth alloy can be cut with high accuracy and efficiency. Thus, a small rare-earth magnet (with a thickness of about 0.5 mm to about 3.0 mm, for example) for use in a voice coil motor to position a magnetic head can be produced with high accuracy and efficiency.\n\n[0055]Hereinafter, a rare-earth alloy cutting method according to a preferred embodiment of the present invention will be described in further detail with reference to the accompanying drawings. In the following preferred embodiment, a method of cutting a neodymium magnet sintered body to make the neodymium magnet mentioned above will be described as an example.\n\n[0056]A method for producing a neodymium (Nd—Fe—B based) sintered magnet will be described briefly. It should be noted that a method of making a rare-earth alloy as a magnet material is disclosed in detail in U.S. Pat. Nos. 4,770,723 and 4,792,368 identified above, for example.\n\n[0057]First, material metals are exactly weighed to a predetermined mixture ratio and then melted in a high-frequency melting crucible within a vacuum or an argon gas atmosphere. The molten material metals are then poured into a water-cooled casting mold, thereby obtaining a material alloy with a predetermined composition. Then, this material alloy is pulverized to make a fine powder with an average grain size of about 3 μm to about 4 μm. Subsequently, this fine powder is introduced into a die and then pressed and compacted under a magnetic field. If necessary, this compacting process step is carried out after the fine powder has been mixed with a lubricant. Next, the compact is subjected to a sintering process at a temperature of', '发明背景 \n\n [0001] 1.发明领域 \n\n [0002] 稀土合金的切割方法技术领域本发明涉及稀土合金的切割方法,更具体地,涉及一种通过将磨粒固定在芯线上的线锯来切割稀土合金的方法。 \n\n [0003] 2.相关技术的描述 \n\n [0004] 稀土合金用作制造强磁体的材料。 通过将稀土合金磁化而获得的稀土磁体可以有效地用作音圈电动机的磁体,该音圈电动机例如用于将磁头定位在磁记录器中。 \n\n [0005] 在现有技术中,稀土合金材料(例如,锭或烧结体的形式)通常通过例如用旋转的切片刀片将材料切片的技术来切割。 然而,在该切片刀片切割过程中,切割刃相对较厚,因此需要大量的加工余量。 结果,稀土合金材料的产率太低,以至于增加了所得稀土合金产品(例如稀土磁体)的成本。 \n\n [0006] 线锯切割工艺被称为切割方法,与切片刀切割工艺相比,其需要的加工余量较小。 例如,日本特开平11-198020号公报公开了可以用线锯切割诸如硅,玻璃,钕或铁氧体的硬而脆的材料,该线锯是通过将超级磨料颗粒固定在玻璃的外表面上而获得的。 具有结合层的高硬度芯线(在本文中将其称为“固定磨料线锯”)。 \n\n [0007] 如果通过用这样的机械加工余量小的固定式线锯切割稀土合金材料而能够同时获得预定厚度的板数,则能够大幅度降低稀土类磁铁的制造成本。 但是,从未有人报道过用这种可批量生产的固定式线锯将稀土合金成功切割。 \n\n [0008] 本发明人对此现象进行了广泛的研究,并且发现了该问题的主要原因是通过烧结工艺(在本文中称为“稀土烧结”)产生的稀土合金之间在机械性能上的显着差异。 合金”和硅。 更具体地说,稀土烧结合金包括整体硬质和脆性主相(即,R 2 铁 14 B晶粒)和导致延性断裂的晶界相。 因此,与诸如硅的硬而脆的材料不同,稀土烧结合金不那么容易切割。 也就是说,与切割硅或任何其他硬而脆的材料相比,切割阻力更高,并且还产生大量的热量。 而且,稀土合金的比重约为7.5,比硅或任何其他硬而脆的材料的比重高得多。 因此,通过加工过程产生的切削屑(或污泥)无法轻易地从加工部分冲走。 \n\n [0009] 因此,为了以较高的加工精度和效率切割稀土合金,不仅需要充分降低切割阻力,而且还必须有效地散发在切割过程中产生的热量(即,有效地冷却加工部分)。 此外,还必须有效地冲走由切割过程产生的切割碎屑。 \n\n [0010] 为此,通过向稀土合金加工部分提供大量的高润滑性冷却剂(在本文中也称为“切削液”),可以降低切削阻力,并且可以在切削过程中产生热量 有效地消散。 本发明人通过实验发现并证实,如果线锯被足够量的油冷却剂弄湿,则行进的线锯可以向狭窄的机加工部分提供大量的冷却剂。 \n\n [0011] 然而,当使用这种油冷却剂时,处理其废料要花费很多,从而不造成任何环境损害,并且由于难以将废屑与废料分离,因此难以回收废料或切屑。 考虑到这些考虑,优选将水(或水性冷却剂)用作冷却剂。 但是,如果将水用作冷却剂,则由于水的粘度较低(运动粘度为1.0 mm,因此无法保持足够的水沉积在移动的线锯上)。 2 / s)。 结果,即使线锯被水弄湿,也不能将足够量的水供应到机加工部分。 \n\n [0012] 日本特开平11-198020号公报公开了,通过使线锯移动通过从冷却剂容器溢出的冷却剂,即使在需要固定磨料线锯的情况下,冷却剂也能够如预期那样保持沉积在线锯上。 高速行驶(例如2,000 m / min)。 然而,本发明人通过实验发现,即使当用钢丝锯切割通过这种溢水的稀土合金时(例如,如日本特开平11-198020号公报中所公开的),磨料颗粒仍然存在。 在最坏的情况下会掉落,树脂层脱落或线锯断裂。 即使当钢丝锯以大约800 m / min的速度行进时,这些不便也会发生。 \n\n 发明内容 \n\n [0013] 为了克服上述问题,当用线锯机使用主要由水组成的冷却剂切割稀土合金时,本发明的优选实施例延长了线锯的寿命。 \n\n [0014] 根据本发明的优选实施方式的稀土合金切割方法是用线锯切割稀土合金的方法,该线锯通过将磨料颗粒固定在具有树脂层的芯线上而获得。 该方法包括以下步骤:移动线锯,同时将用线锯加工的一部分稀土合金浸入冷却剂中,该冷却剂主要由水组成,其表面张力为约25 mN / m至约25 mN / m。 在约25℃下为60mN / m,从而切割稀土合金。 在线锯中,在长度方向上彼此相邻的两个磨料颗粒之间的平均距离为磨料颗粒的平均颗粒尺寸的平均高度的约150%至小于约400%。 从树脂层的表面突出的磨粒的一部分为磨粒的平均粒径的约70%以下,并且树脂层相对于芯线的厚度偏差率为约40%。  ,从而实现上述优点。 \n\n [0015] 在根据本发明的优选实施方式的另一种稀土合金切削方法中使用的主要由水组成的冷却剂也可以由其动摩擦系数而不是其表面​​张力来指定。 在那种情况下,可以使用相对于稀土合金在约25℃下具有约0.1至约0.3的动摩擦系数的冷却剂。 \n\n [0016] 磨粒的平均粒径D优选满足20μm≤D≤60μm。 \n\n [0017] 芯线的直径优选为约0.15mm至约0.2mm。 \n\n [0018] 在一个优选实施例中,移动线锯的步骤包括在多个辊上移动线锯的步骤。 多个辊中的每一个优选地包括聚合物层,在该聚合物层上设置有引导槽,该引导槽具有一对倾斜的表面,其中至少一个倾斜的表面相对于第二表面限定约25度至小于约45度的角度。 辊的径向方向,并且金属丝在倾斜表面之间穿过。 \n\n [0019] 树脂层优选由酚醛树脂,环氧树脂或聚酰亚胺树脂制成。 \n\n [0020] 在优选的实施方式中,稀土类合金是R-Fe-B类稀土类烧结合金,也可以是Nd-Fe-B类稀土类烧结合金。 \n\n [0021] 通过以下参考附图对本发明的优选实施例的详细描述,本发明的其他特征,要素,步骤,特征和优点将变得更加明显。 \n\n 附图的简要说明 \n\n [0022] 图。 附图说明图1A是示出如何限定线锯的磨粒突出率的示意性截面图,并且 图1B是示出如何限定线锯的厚度偏差百分比的示意性截面图。 \n\n [0023] 图。 图2是示出线锯机的示意图,该线锯机可以有效地用于执行根据本发明的优选实施方式的稀土合金切割方法。 \n\n [0024] 图。 图3是示出图1和图2所示的线锯机的构造的示意图。 图1A和1B在加工部分附近。 \n\n [0025] 图。 图4示意性地示出了线锯的截面结构,该线锯可以有效地用于执行本发明的优选实施方式的稀土合金切割方法。 \n\n [0026] 无花果 图5A和5B示意性地示出了线锯上的磨料颗粒的分布,该线锯可以有效地用于执行本发明的优选实施方式的稀土合金切割方法。 图5A示出了两个相邻的磨料颗粒之间的平均距离L为磨料颗粒的平均颗粒尺寸的大约200%的情况。 图5B示出了平均距离L为平均晶粒尺寸的大约300%的情况。 \n\n [0027] 图。 图6示意性地示出了优选在本发明的优选实施方式的线锯机中使用的辊的横截面结构。 \n\n [0028] 图。 图7示意性地示出了传统辊的截面结构。 \n\n [0029] 图。 图8是示出辊引导槽的倾斜的倾斜角与线锯扭转角之间的关系的曲线图。 \n\n 具体实施方式 \n\n [0030] 根据本发明的优选实施方式的稀土合金切割方法使用线锯,该线锯通过将磨料颗粒(优选地为金刚石磨料颗粒)固定在具有树脂层的芯线(优选地为钢琴线)上而获得。 该方法包括以下步骤:移动线锯,同时将用线锯加工的一部分稀土合金浸入冷却剂中,该冷却剂优选主要由水组成,并且其表面张力优选为约25 mN / m。 在约25℃下在约60mN / m至约60mN / m的范围内,从而切割稀土合金。 在线锯中,在长度方向(即,线锯行进方向)上彼此相邻的两个磨料颗粒之间的平均距离优选为平均颗粒的约150%至小于约400%。 磨料颗粒的尺寸,从树脂层的表面突出的磨料颗粒的部分的平均高度优选为磨料颗粒的平均颗粒尺寸的约70%或更少,以及树脂的厚度偏差百分比 相对于芯线的层的厚度优选为约40%。 任选地,还可以使用相对于稀土合金在约25℃下具有约0.1至约0.3的动摩擦系数的冷却剂作为冷却剂。 \n\n [0031] 在本发明的该优选实施方式的稀土合金切割方法中,利用固定的磨丝线锯切割稀土合金的工艺步骤是在将其机械加工部分浸入表面张力为约10℃的冷却剂中的情况下进行的。 在约25℃下为25mN / m至约60mN / m(即,约25dyn / cm至约60dyn / cm)。因此,可以有效地冷却线锯。 表面张力落在该范围内的冷却剂相对于稀土合金和/或线锯表现出比水更高的润湿性(即,顺应性)。 因此,冷却液会渗入机加工部分(即稀土合金和线锯彼此接触的部分,稀土合金正在被机加工的部分,在本文中也称为“机加工”部分)。 凹槽”)。 自然地,主要由水组成的冷却剂比油冷却剂(例如,矿物油)具有更高的比热,因此实现了更高的冷却效率。 如本文所用,“主要由水组成的冷却剂”是指冷却剂,其至少约70重量%是水。 \n\n [0032] 在本发明的优选实施方式的稀土合金切割方法中有效使用的优选冷却剂也可以通过其相对于稀土合金的动摩擦系数来确定。 具体地,在约25℃下具有约0.1至约0.3的动摩擦系数的冷却剂实现了与具有表面张力落入上述范围内的冷却剂相同的功能和效果。 表面张力被认为是冷却剂相对于机加工部分的渗透性的指标。 另一方面,动摩擦系数被认为是由加工部分中的冷却剂产生的润滑度的指标。 还已知在表面张力和动摩擦系数之间存在定性相关。 \n\n [0033] 冷却剂的表面张力是用众所周知的DuNouy张力计测量的。 而且,冷却剂相对于稀土合金的动摩擦系数是用增田的“四球摩擦测试仪”测量的,该测试仪在日本经常被用作基础测试仪。 在此优选采用约25℃下的表面张力和动摩擦系数的值作为表征冷却剂的参数。 \n\n [0034] 应当注意,将在稍后描述的具体示例中引用的动摩擦系数是通过包括铁球的四球摩擦测试仪获得的。 将以R-Fe-B基稀土合金为例(其中R是包括Y的稀土元素之一,并且是包括Nd的合金 2 铁 14 例如,B金属间化合物作为主相)以比其任何其他构成元素更高的百分比包含铁。 因此,用铁球获得的冷却剂的动摩擦系数应该是相对于稀土合金的近似良好的动摩擦系数。 本发明人实际上通过实验证实了这一点。 可以有效地用作稀土磁体材料的稀土合金的组成和制造方法在美国专利No. 例如,美国专利号4,770,723和4,792,368。 在基于R-Fe-B的稀土合金的典型成分中,经常将Nd或Pr用作R,部分Fe可用过渡元素(如Co)代替,而B的一部分可以 替换为C。 \n\n [0035] 在本发明的优选实施方式的切割过程中使用的冷却剂由表面张力或在约25℃下的动摩擦系数确定。然而,在冷却剂的过程中,冷却剂的温度并不总是约25℃。 实际使用。 然而,为了获得本发明的优选实施方式的效果和优点,优选将要使用的冷却剂的温度控制在约15℃至约35℃的范围内,更优选在该范围内。 冷却剂的表面张力和动摩擦系数为约20℃至约30℃,并且甚至更优选在约23℃至约28℃的范围内。 取决于温度。 因此,如果实际使用的冷却剂的温度大大偏离这些优选温度范围,那么冷却剂的表面张力和动摩擦系数也将基本上偏离其优选范围。 结果,冷却效率或切割效率将显着下降。 \n\n [0036] 可以通过将表面活性剂或合成润滑剂(即所谓的“合成”)添加到水中来制备冷却剂。 通过适当地改变添加剂的种类或量,可以得到预定的表面张力或动摩擦系数。 另外,如果使用这样的主要由水组成的冷却剂,则稀土冷却剂的切削碎屑可以通过磁体容易地与切削产生的污泥分离,并且冷却剂可以回收,因为冷却剂的含量相对较低。 粘度。 还可以防止冷却剂废物处理过程对自然环境产生有害影响。 此外,可以减少污泥中所含的碳量。 结果,由从污泥收集的切割碎屑制成的磁体可以具有改善的磁性能。 \n\n [0037] 如果用高速移动的线锯切割工件,则冷却剂可能会起泡沫,从而意外降低冷却效率。 然而,通过使用包括消泡剂的冷却剂,由于冷却剂的发泡导致的冷却效率的这种降低可以被最小化。 此外,当使用PH为约8至约11的冷却剂时,可使稀土合金的腐蚀最小化。 更优选地,使用具有约9或更高的PH的冷却剂。 此外,通过使用包括防锈材料的冷却剂,可以显着减少稀土合金的氧化。 这些添加剂的量可以根据稀土合金的种类和切削条件以及其他因素适当调整。 \n\n [0038] 作为线锯,优选使用在其上固定有树脂层的金刚石磨粒的线锯。 更具体地,优选使用通过用树脂将金刚石磨粒固定在芯线(优选为钢琴线)的外表面上而获得的线锯。 其中,特别优选酚醛树脂,环氧树脂和聚酰亚胺树脂。 原因如下。 首先,这些树脂不仅相对于钢琴线(即硬拉线)的外表面显示出高的粘结强度,而且相对于冷却剂具有优异的润湿性(即渗透性),这将在后面描述。 如有必要,填充剂(例如SiC或Al 2 Ø 3 )可以添加到树脂中(例如,参见日本专利公开号3078020)。 第二,其上用树脂层固定有磨料颗粒的线锯比通过电沉积工艺生产的线锯便宜,因此降低了切割稀土合金的成本。 应当注意,线锯的芯线不必是钢琴线,而是也可以由Ni-Cr合金,Fe-Ni合金或任何其他合适的合金,W,Mo或任何其他合适的合金制成。 耐火金属或一束高强度纤维,例如尼龙纤维。 另外,磨粒的材料也不限于金刚石,例如也可以是SiC,B,C或CBN(立方氮化硼)。 \n\n [0039] 通过使用上述冷却剂,与使用水作为冷却剂的情况相比,可以大大减少切割过程中线锯的温度异常升高。 因此,可以最小化磨粒的脱轨,树脂层的剥离和线锯的折断。 在本发明的该优选实施方式的稀土合金切割方法中,不仅适当地选择冷却剂而且还适当地选择线锯,因此使得可以使用线锯更长的时间并且进一步减少了制造。 成本。 如稍后将通过实验示例所述,可以通过使用线锯来最小化异常脱轨,树脂剥落和咬合,在该线锯中,在长度方向上彼此相邻的两个磨粒之间的平均距离(即,  (行进方向),优选为磨粒的平均粒径D的约150%至小于约400%,磨粒的从树脂层的表面突出的部分的平均高度优选为约70。 磨粒的平均粒径D的1%以下,树脂层相对于芯线的厚度偏差率优选为40%左右。 \n\n [0040] 如稍后将通过实验示例所述,基于广泛研究的结果,本发明人推测,通过不仅调节通过树脂层固定在芯线的外表面上的磨粒的密度, 如在线锯的长度方向上测量的和从树脂层突出的磨粒的部分的平均高度(在本文中称为“突出百分比”),以及树脂层的厚度偏差百分比 相对于芯线,切削屑(或污泥)的冲洗能力可保持在一个良好的范围内,并且切削过程中要施加在各个磨料颗粒上的负载将变得均匀,从而最大程度地减少了异常脱轨,树脂剥落 和抢购。 \n\n [0041] 在下文中,将参照图3至图6来定义表征在本发明的该优选实施方式的切割方法中使用的线锯的突出百分比Pr和厚度偏差百分比Td。  1A和1B。 \n\n [0042] 中线锯 20  如图所示。  1A,磨粒 24  固定在芯线的外表面 22  带有树脂层 26 。 假设磨粒的平均粒度 24  是D并且磨料颗粒的各部分的高度 24  从树脂层突出 26  (突出高度)为P时,将突出率Pr(%)定义为突出高度P与平均粒径D之比。即,Pr =(P / D)×100。 可以从示出线锯的横截面的光学显微照片中获得突出百分比Pr。 20 , 例如。 \n\n [0043] 如日本专利公开No.3078020中所公开的,线锯 20  例如,可以通过用称为“搪瓷法”的方法用分散有磨粒的树脂(根据需要向其添加溶剂)涂覆芯线的外表面来制成。 在这种情况下,除非充分调节树脂层的厚度,否则树脂层的厚度 26  可能相对于芯线变得不均匀 22  在包括线锯直径的横截面上 20  (或芯线 22 ),如图2所示。 1 B.评估树脂层厚度的这种偏差 26  定量地,厚度偏差百分比Td(%)定义如下。 \n\n [0044] 假设芯线的半径 22  是Rw,树脂层的最小厚度 26  是Trl和树脂层的最大厚度 26  如果是Trh,则厚度偏差百分比Td由(Trh-Trl)/ {(Trh + Trl)/ 2}给出。 可选地,分母(Trh + Trl)/ 2可被视为树脂层的平均厚度 26 。 通过实际测量芯线的半径Rw获得厚度偏差百分比Td 22 树脂层的最小厚度Trr和最大厚度Trh 26 。 树脂层的厚度 26  可以从显示线锯横截面的光学显微照片中获得 20 , 例如。 自然地,树脂层的理想厚度偏差百分比 26  是0%。 \n\n [0045] 另外,如日本专利公开No.3078020中公开的,线锯 20  在通过搪瓷法涂布树脂的工艺步骤中,通过用浮模控制树脂层的厚度,可以获得满足上述条件的树脂。 这样的线锯 20  如果明确指定了上述规格,则可以由一般的线锯制造商(例如,Allied Material Corp.)提供。 \n\n [0046] 为了达到较小的加工余量的效果,线锯 20  优选地,其外径为约0.3mm或更小,更优选地为约0.25mm或更小。 线锯外径的下限 20  定义为达到足够的强度。 另外,为了以足够的强度固定预定尺寸的磨粒,需要使用芯线 22  优选使用直径为约0.12mm至约0.20mm,更优选约0.15mm至约0.20mm的管。 \n\n [0047] 考虑到切割效率,磨粒的平均粒径D 24  优选满足20μm≤D≤60μm,更优选满足30μm≤D≤60μm,并且最优选满足40μm≤D≤60μm。 \n\n [0048] 通过使用线锯 20  根据本发明的优选实施例,实现了良好的切割效率和碎屑冲洗能力。 因此,即使允许线锯以相对较高的速度(例如,以1,000m / min)行进,也可以加工工件,并且线锯可以比传统的线锯使用更长的时间。 另外,由于可以用上述冷却剂有效地冷却稀土合金,因此可以长时间连续地以良好的加工精度加工稀土合金。 当使用主要由水组成的冷却剂时,可以通过将行进速度设置为比情况高约20–30%(例如,在大约1100 m / min到大约1200 m / min的范围内)来优化切削效率。 使用机油冷却剂的地方。 \n\n [0049] 在本发明的优选实施方式的切割方法中使用的主要由水组成的冷却剂优选具有低粘度(运动粘度为约1mm)。 2 / s)。 因此,产生的切削屑冲洗能力低于油冷却剂(运动粘度通常为5 mm 2 / s或更多)。 因此,为了提高切割碎屑冲洗能力,优选在切割过程中将机加工部分保持浸没在存储在容器中的冷却剂中。 另外,冷却剂优选不仅通过其底部而且从其开口供应到容器中,使得冷却剂总是从容器的开口溢出。 \n\n [0050] 已冲入低粘度冷却液中的切屑很容易沉淀,只有少量切屑漂浮在容器的开口周围。 为了在将加工部浸入冷却剂中的状态下切割工件,需要将线锯布置成在容器的开口附近穿过冷却剂。 因此,线锯在几乎没有切削屑的冷却剂中行进,并且向机加工部分供应了几乎没有切削屑的冷却剂。 特别地,如果还从容器开口供应冷却剂以使其总是从开口溢出,则供应至机加工部分的冷却剂可具有减少的切削屑量。 此外,还可以利用从容器开口供应的冷却剂的流动,机械地洗去沉积在线锯上的切割碎屑。 每分钟溢出的冷却剂的量优选为容器体积的约50%或更多。 而且,从开口供应的冷却剂的量优选地大于通过容器的底部供应的冷却剂的量。 \n\n [0051] 此外,如果在与钢丝锯行进方向相交的容器开口的四个侧面上形成帘状的冷却剂(或空气)流,并且通过减小压力来保持溢出的冷却剂的表面高于容器壁, 一定量的冷却剂从容器开口溢出,然后将更多的冷却剂提供给加工部分周围的区域。 结果,可以进一步减少冷却剂中的切削屑的量。 形成冷却剂流的排出压力优选在约0.2MPa(即约2kgf / cm)的范围内。 2 )至约1.0 MPa(即约10 kgf / cm 2 ),更优选在约0.4 MPa(即,约4 kgf / cm 2 )至约0.6 MPa(即约6 kgf / cm 2 )。 原因如下。 具体地,如果排出压力低于这些范围,则可能无法获得足够的效果。 但是,如果排出压力超过这些范围,则线锯会弯曲得太多,从而导致加工精度降低。 \n\n [0052] 另外,在设置成使线锯在其上行进的多个主辊中,还优选地向两个布置在容器的两侧以调节线锯的行进路径的主辊供给已排出的冷却剂。 通过将冷却剂排放到这些主辊,聚合物线(例如,有机聚合物层,例如聚氨酯橡胶层)的温度升高,该聚合物层设置在主辊的表面上以具有线锯。 导向槽,可以最小化。 另外,还可以洗去沉积或留在线锯上或导向槽中的切割碎屑(或淤渣),从而防止线锯行进路径偏离或线锯从槽中脱轨。  。 \n\n [0053] 另外,通过收集包括切削过程中产生的稀土合金切削残渣的污泥和冷却液在内的脏液,并通过磁铁将稀土合金切削残渣从污泥中分离出来,可以使冷却液冷却。 被回收(例如循环使用)。 如上所述,由于主要由水组成的冷却剂具有低粘度,因此可以容易地从中挑选出切屑。 而且,通过分选稀土合金切削碎屑,可以容易地处置冷却剂废料,而不会对环境造成任何损害。 此外,可以减少不易与R-Fe-B基合金(其中R是包括Y的稀土元素之一)分离的碳,并且切削屑也可用作回收材料,用于 稀土合金。 由于冷却剂优选主要由水组成,因此容易减少从切削屑回收的稀土合金中包含的碳量。 因此,可以获得可用作稀土磁体的材料的原材料。 作为从污泥中分离出切削屑的方法,可以使用本申请的申请人在日本特开2002-36113号公报中公开的方法。 \n\n [0054] 通过采用本发明的优选实施方式的切削方法,可以高精度且高效地切削稀土合金。 因此,可以以高精度和高效率生产用于音圈电动机中以定位磁头的小型稀土磁体(例如,具有约0.5mm至约3.0mm的厚度)。 \n\n [0055] 在下文中,将参照附图进一步详细地描述根据本发明的优选实施方式的稀土合金切割方法。 在以下的优选实施方式中,以切割钕磁铁烧结体而制造上述钕磁铁的方法为例进行说明。 \n\n [0056] 将简要描述用于制备钕(Nd-Fe-B基)烧结磁体的方法。 应当注意,在美国专利No.5,235,641中详细公开了一种制备稀土合金作为磁体材料的方法。 例如,上述的美国专利号4,770,723和4,792,368。 \n\n [0057] 首先,将金属材料精确地称重至预定的混合比,然后在真空或氩气气氛下的高频熔化坩埚中熔化。 然后将熔融的金属材料倒入水冷铸模中,从而获得具有预定组成的材料合金。 然后,将该材料合金粉碎成平均粒径为约3μm至约4μm的细粉。 随后,将该细粉引入模具中,然后在磁场下压制和压实。 如有必要,在将细粉与润滑剂混合后进行压实过程。 接下来,在约1,000℃至约1,200℃的温度下对成型体进行烧结处理,从而获得钕磁铁烧结体。 之后,为了提高磁体的矫顽力,对烧结体进一步在约600℃下进行时效处理,从而完成稀土类磁体烧结体的制造工序。 烧结体可以具有例如大约30mm×50mm×50mm的尺寸。 \n\n [0058] 然后,加工并切割所得的烧结体,从而将烧结体分成多个薄板(在本文中有时将其称为“基板”或“晶片”)。 接下来,对烧结体的这些薄板中的每一个进行抛光和精加工以调节其形状和尺寸。 随后,为了提高长期可靠性,对该薄板进一步进行表面处理。 此后,薄板进一步经过磁化过程和测试过程,从而完成钕永磁体。 可替代地,磁化过程可以在切割过程之前进行。 \n\n [0059] 在下文中,将参照图3至图6更详细地描述根据本发明的优选实施方式的切割工艺。  2至5B。 \n\n [0060] 图。 图2是示出线锯机的示意图。 100 根据本发明的优选实施例,其可以有效地用于进行稀土合金切割工艺。 \n\n [0061] 线锯机 100  包括三个主辊 10 a , 10 b  和 10 c  和两个线轴 40 a  和 40 b 。 主辊 10 a ,由船只提供 30  包含冷却剂的是驱动辊,而其他主辊 10 b  和 10 c 排列在容器的两侧 30 ,是从动辊。 线锯 20  从两个卷轴线轴之一中卷出时来回走动(例如, 40 a ),然后卷入另一个卷线轴(例如, 40 b )。 也就是说,线锯 20  优选地,通过所谓的“往复驱动方法”来驱动。 在这种情况下,如果卷线轴的卷线时间 40 a  比其他线轴长 40 b ,然后是全新的线锯 20  可以喂到卷线筒 40 a  同时允许线锯 20  来回移动。 线锯 20  优选地,以大约600m / min至大约1,500m / min的速度行进。 并且例如可以以约1m / min至约5.5m / min的速率进给新焊丝。 \n\n [0062] 线锯 20  例如可以在主辊之间以150条线串起来 10 a , 10 b  和 10 c 。 定义线锯的行进路径 20 ,具有用于引导线锯的引导槽(例如,具有约0.6mm的深度,未示出)的聚合物层(例如,聚氨酯橡胶层之类的有机聚合物层) 20  位于主辊的表面 10 a , 10 b  和 10 c 。 线锯的线间距 20  由该导向槽的间距确定。 并根据要从工件切出的板的厚度来调整导向槽的间距。 作为聚合物层,也可以使用由有机硅弹性体制成的无机聚合物层。 \n\n [0063] 穿越者 42 a  和 42 b  绕线架附近设有用于调节绕线位置的装置 40 a  和 40 b , 分别。 沿着从卷线轴到底线的路径 40 a  要么 40 b  到主辊 10 a ,五个导辊 44  和一个张力辊 46  优选地在每侧上都设置有,以引导线锯 20  并调节其张力。 线锯的张力 20  可以根据包括切割长度,切割速度和行进速度在内的各种条件的组合来适当地改变“旋转速度”。 例如电线 20  可以具有约20 N至约40 N的张力。 \n\n [0064] 烧结体工件 50  将如上所述获得的线材放入该线锯机中 100  以以下方式。 \n\n [0065] 大量工件 50  例如,用环氧粘合剂(未示出)将它们粘结在一起。 这些工件之后 50  已经组装成多个块,这些块固定在铁质工作板上 54  带碳基板 52  插在他们之间。 工作板 54 ,工件块 50  和碳基板 52  它们也通过粘合剂(未示出)粘合在一起。 碳基板 52  通过线锯进行加工 20  后工件 50  已经被切割,直到工作板 54  停止下降。 这样,碳基板 52  用作保护工作板的假人 54 。 \n\n [0066] 在该优选实施例中,每个块被设计成在沿线锯的方向测量时具有大约100mm的尺寸。 20  旅行。 虽然工件 50  在上述优选实施方式中,将线锯布置成多个块,其尺寸在线锯的行进方向上限定 20  随冷却液的表面张力或行进速度而变化。 另外,工件的数量和排列 50  组成单个块的零件可以随每个工件的尺寸而变化 50 。 因此,工件 50  考虑到这些考虑,可以适当地将其布置为最佳尺寸的块。 \n\n [0067] 工件 50 通过这种方式设置的升降机,通过带有电机的电梯降低 58  并压在行进的线锯上 20  以便进行切割和加工。 工件下降速度 50  可以在各种条件下变化,但是可以在例如约20mm / hr至约50mm / hr的范围内。 \n\n [0068] 储存在冷却液箱中的冷却液 60  由排放泵抽起 62  并通过管道输送 63 。 管道 63  分支到下管 64  和上管 66 ,配有阀门 63 b  和 63 a 分别控制冷却液的流量。 下管 64  连接到下喷嘴 64 a ,它位于容器的底部 30  为了将机加工部分浸入冷却剂中。 另一方面,上管 66  不仅连接到上喷嘴 66 a , 66 b  和 66 c  用于从容器的开口处供应冷却液 30  还有两个上喷嘴 66 d  和 66 e  提供用于冷却主辊的目的 10 b  和 10 c , 分别。 \n\n [0069] 冷却液供应到容器中 30  通过上喷嘴 66 a , 66 b  和 66 c  下喷嘴 64 a 。 至少在切割过程中,冷却剂保持从容器的开口溢出 30  如图2中的箭头F所示。  2.从容器溢出的冷却液 30  被引导并收集到收集槽中 72  通过收集盘 70  在船下提供 30 。 收集的冷却液可以通过排放泵抽出 74  然后返回冷却液箱 60  通过循环管 76  如图 2,举例。 过滤器 78  优选设置在循环管的中点附近 76  以便从收集的冷却液中清除并清除切屑。 但是,收集方法不限于图示的方法。 可替代地,可以提供用于通过磁力将切割碎屑分类和分离的机构(例如,参见日本特开2002-36113号公报)。 \n\n [0070] 在下文中,将参照图2更详细地描述根据本发明的优选实施方式的切割工艺。  3。 \n\n [0071] 血管 30  包括辅助墙 32  在其侧壁上,与线锯的行进方向相交 20 ,并在其开口附近。 这些辅助墙 32  可以是塑料板(例如,丙烯酸板)并且可以布置成位于未加载的线锯的行进路径附近,如图2中的虚线所示。  3.当工件 50  降低并与线锯接触 20  为了被切割,线锯 20  弯曲并且将机加工部分浸入容器的冷却液中 30  如图1中的实线所示。  3.在这种情况下,如线锯 20  向下弯曲,线锯 20  切断辅助墙 32 ,从而形成缝隙。 用线锯切割时 20  达到稳态后,挠曲的大小将保持不变。 结果,线锯 20  正在移动以切割工件 50  同时穿过辅助壁创建的缝隙 32 。 这样,穿过辅助壁形成的狭缝 32 ,以调节线锯的行进路径 20  并有助于稳定加工精度。 \n\n [0072] 血管 30  例如,它的容量约为35 L(垃圾)。 在切割过程中,容器 30  最好以约30 L / min的流速通过下喷嘴向冷却液供入 64 a  并以约90 L / min的流速通过上喷嘴 66 a , 66 b  和 66 c 分别使冷却剂始终从开口溢出。 为了仅将冷却液提供给线锯 20 ,并非总是需要使冷却液溢出,因为线锯 20  如图4所示,在切割过程中弯曲。  2.但是,在如本示例中的在切割钕磁体烧结体时,优选地采用这种构造以增加切割碎屑冲洗能力。 \n\n [0073] 为了提高切削屑冲洗能力,有效地减少了在加工部分附近的冷却剂中所包括的切削屑的量。 为了获得足够的冲洗能力,每分钟溢出的冷却剂的量优选为容器容积的约50%或更多。 此外,优选地,从容器的开口供应大量的新鲜冷却剂。 30  而不是通过其底部。 在该优选实施例中,优选地使用主要由水组成的低粘度冷却剂。 因此,已经冲走到冷却剂中的切削屑容易沉淀。 因此,如果通过容器底部供应大量冷却液 30 ,沉淀的切削碎屑可能会意外地漂浮在机加工部分周围。 \n\n [0074] 而且,优选地增加从开口供应的新鲜冷却剂的百分比。 也就是说,通过从容器的开口额外地供应冷却剂 30  并且,通过使冷却水从开口溢出,能够减少被供给至加工部的冷却水所包含的切削屑的量。 此外,沉积在钢丝锯上的切割碎片 20  还可通过从容器开口处供应的冷却剂流将其机械冲洗掉 30 。 \n\n [0075] 还有,辅助墙 32  以上所述起容器侧壁的作用 30  除了由线锯形成的缝隙 20 因此,可以有助于保持冷却剂的表面S较高。 此外,如果在容器的开口周围形成帘状冷却剂流 30  用喷嘴 66 b  和 66 e  从而与线锯的行进方向相交 20  如果溢流冷却液的表面S保持高于辅助壁 32  船的 30  通过减少从容器开口溢出的冷却液量 30 ,则更多的冷却剂被供应到加工部分周围的区域。 结果,可以进一步减少冷却剂中的切削屑的量。 形成冷却剂流的排出压力优选在约0.2MPa(即约2kgf / cm)的范围内。 2 )至约1.0 MPa(即约10 kgf / cm 2 ),更优选在约0.4 MPa(即,约4 kgf / cm 2 )至约0.6 MPa(即约6 kgf / cm 2 )。 原因如下。 具体地,如果排出压力低于这些范围,则可能无法获得足够的效果。 但是,如果排出压力超过这些范围,则线锯 20  可能会弯曲得太多,从而降低加工精度。 \n\n [0076] 另外,两个主辊 10 b  和 10 c 排列在容器的两侧 30  调节线锯的行进路径 20 最好还提供已排出的冷却剂。 通过将冷却液排放到这些主辊上 10 b  和 10 c ,设置在主辊表面上的聚合物层(例如,聚氨酯橡胶层)的温度升高 10 b  和 10 c  以便有一个线锯的导向槽 20 ,可以最小化。 此外,已沉积或留在线锯上的切割碎屑(或污泥) 20  或在导向槽中也可被冲走,从而防止线锯的行进路径 20  偏离或线锯 20  从凹槽脱轨。 \n\n [0077] 要添加到主要由水组成的冷却剂中的表面活性剂的实例包括阴离子表面活性剂和非离子表面活性剂。 优选的阴离子表面活性剂包括脂肪酸衍生物,包括脂肪酸皂和环烷酸皂;酯硫酸盐,例如长链醇酯硫酸盐和油硫酸盐(例如,动物或植物油硫酸盐);以及磺酸,例如石油磺酸盐。 优选的非离子表面活性剂包括聚氧乙烯,例如聚氧乙烯烷基苯基醚和聚氧乙烯单脂肪酸酯,多元醇,例如脱水山梨糖醇单脂肪酸酯,和烷醇酰胺,例如脂肪酸二乙醇酰胺。 具体地,通过向化学溶液类型JP-0497N(由Castrol Limited生产)中添加约2wt%的水,可以将动摩擦系数调节为落入预定范围内。 \n\n [0078] 另外,优选的合成润滑剂的实例包括合成溶液类型,合成乳液类型和合成可溶类型。 其中,特别优选合成溶液类型。 更具体地,可以使用Syntairo 9954(由Castrol Limited生产)和#830或#870(由Yushiro Chemical Industry Co.,Ltd。生产)。 在任何情况下,通过向水中添加约2wt%至约10wt%的这种润滑剂,可以将表面张力(或动摩擦系数)控制在优选范围内。 \n\n [0079] 此外,通过添加防锈材料,可以防止稀土合金的腐蚀。 特别地,在切割基于R-Fe-B的稀土合金时,PH优选设定在大约8至大约11之间,更优选地至少等于大约9之间。防锈材料的实例包括有机材料和无机材料。 优选的有机防锈材料包括羧酸盐,例如油酸酯和苯甲酸酯,以及胺,例如三乙醇胺。 优选的无机防锈材料包括磷酸盐,硼酸盐,钼酸盐,钨酸盐和碳酸盐。 \n\n [0080] 另外,诸如苯并三唑的氮化合物可以用作有色金属防腐剂。 甲醛供体如六氢三嗪可用作防腐剂。 \n\n [0081] 硅氧烷乳液可以用作消泡剂。 通过添加消泡剂,可以减少冷却剂的起泡,可以提高冷却剂的渗透性和冷却效果,并且线锯的温度异常升高或磨损异常。 20  可以最小化。 \n\n [0082] 接下来,线锯的结构 20  将参考图1至图5描述在该优选实施例中优选使用的“电子元件”。  4, 5 和 5 B.应注意的是线锯下半部分的结构 20  在图1中简化了单点链下方的部分。  4。 \n\n [0083] 线锯,通过固定金刚石磨粒而获得 24  在芯线(例如钢琴线)的外表面上 22  带有树脂层 26 ,最好用作线锯 20 。 其中,特别优选酚醛树脂,环氧树脂和聚酰亚胺树脂。 这是因为这些树脂不仅相对于钢琴线(即硬拉线)的外表面显示出高粘结强度。 22  相对于上述冷却剂还具有优异的润湿性(即渗透性)。 \n\n [0084] 更具体地,优选的线锯 20  通过将平均粒径约为40μm的金刚石磨粒固定在钢琴线的外表面上,可以得到外径约为0.24mm的颗粒。 22 ,具有约0.18mm的直径,具有酚醛树脂层 26 , 例如。 此外,考虑到切削效率和切削屑(污泥)冲洗效率,两个相邻磨料颗粒之间的平均距离 26  沿线锯的长度方向 20  (即,与图4中的单点链平行的轴向)优选为磨粒的平均粒径D的约150%至小于约400%。 \n\n [0085] 例如,如果在线锯的长度方向上彼此相邻的两个磨料颗粒之间的平均距离L 20 如图1和图2所示,α1是磨粒的平均粒径D的约200%或约300%。 在图5A和5B中,然后将负荷施加到各自的磨料颗粒上 24  降低了。 结果,磨粒异常脱轨 24 ,树脂层剥离 26  和捕捉被最小化。 换句话说,如果相邻磨粒之间的平均距离L变为约400%或更大,则磨粒的分布密度 24  变得太低了。 因此,要施加在各个磨料颗粒上的负载 24  在切割过程中,它变得如此沉重,以至于导致异常脱轨。 但是,如果相邻磨粒之间的平均距离L小于约150%,则磨粒的分布密度 24  变得太高了。 因此,后述的切屑袋容量不足,切削屑冲洗能力降低。 结果,切割效率也降低。 \n\n [0086] 无花果 图5A和5B示意性地示出了磨料颗粒的均匀分布 24  通过延伸线锯的外表面 20  (例如,长度约为1.6毫米)进入平面图。 但是实际上,磨粒 24 分布不均匀。 然而,从这些附图可以理解相邻的磨料颗粒之间的平均距离L之差对磨料颗粒的分布密度的半定量作用。 线锯上相邻磨粒之间的平均距离L 20  例如,可以使用光学显微照片实际获得。 \n\n [0087] 此外,磨粒的突出百分比 22  在钢丝锯上 20  优选为约70%以下。 这是因为如果突出百分比超过大约70%,则施加在磨料颗粒上的负载 22  不能被树脂层支撑 26  足以避免异常脱轨和树脂层剥离。 另外,考虑到切削屑冲洗能力,磨粒的突出百分比优选地超过约40%。 这是因为如果突出百分比约为40%或更小,则空间 28  磨粒之间 22 。  (即,切屑袋)的容量小,不仅降低切削屑的冲洗能力,而且经常降低切削效率。 筹码袋的大小 28  取决于上述相邻磨料颗粒之间的距离。 \n\n [0088] 此外,在该优选实施方式的切割方法中,线锯 20 ,其中树脂层 26  优选使用具有约40%的厚度偏差百分比的膜。 原因如下。 具体地,如果厚度偏差百分比超过约40%,则将负荷施加在树脂层上 26 ,上面有磨料颗粒 24  固定,变得不均匀。 因此,如果用这种线锯进行切割过程 20 ,那么树脂层的强度 26  会局部不足,从而使磨粒脱轨 24  剥去树脂层 26  容易。 \n\n [0089] 在下文中,相邻磨粒之间的平均距离L,线锯上的磨粒的突出百分比和厚度偏差百分比之间的关系 20  以及树脂层的剥离和折断 26 将通过实验示例来描述切割表面的轮廓不规则(即,缠绕)。 \n\n [0090] 在以下实验示例中,用线锯切割了钕磁铁的烧结块(例如,在行进方向上的长度为约40mm,横向长度为约50mm,厚度为约30mm)。 机 100  如图所示。 通过上述方法在图2中所示的实施例中,以划分块的侧面。 作为冷却剂,通过将WS-250B(由Yushiro Chemical Industry Co.,Ltd。生产)的表面张力和动摩擦系数分别调节为约34.6mN / m和约0.13,作为冷却剂。  ,已被使用。 线锯 20  使其以大约1100m / min的速度和大约40mm / hr的切割速度(沿厚度方向)行进。 \n\n [0091] 芯线(例如钢琴线) 22  线锯的 20  具有约0.18mm的直径。 磨粒(例如金刚石磨粒) 24  具有约42μm的平均晶粒尺寸。 酚醛树脂用作树脂层 26 其平均厚度(即,理想厚度)为约20μm。 相邻磨粒之间的平均距离L和线锯上磨粒的突出百分比和厚度偏差百分比 20  使用光学显微照片获得。 应当注意,基于以大约500mm的间隔彼此隔开的大约10个横截面的测量结果获得厚度偏差百分比。 树脂层剥离 26  通过查看线锯的外观进行评估 20 ,它曾用眼睛处理过钕磁铁的烧结块四个小时。 例如,如果线锯 20 具有约200m的总长度,并且如果剥离部分的长度的总和(各自具有至少约5mm的长度)为约10m以上,则树脂层被认为是“剥离的”。 具体地,如果剥离部分的长度的总和为约10m至约60m,则树脂层被认为是“轻微剥离”;如果总长度超过约60m,则树脂层被认为为“全部剥离”。 过度”。 另外,如果“轻微剥离”的树脂层在相邻的剥离部分之间具有约20m以上的间隔,则该树脂层被认为是“间歇剥离”。 此外,还利用接触式粗糙度仪测量切割表面的轮廓不规则度,并且采用在约25mm的宽度内的最大卷绕值作为代表值。 \n\n [0092] 本发明人分析了在线锯的长度方向上相邻磨料颗粒之间的平均距离L的影响。 20 。 结果示于下表1。 \n\n [0093] 从表1可以明显看出,如果相邻磨粒之间的平均距离L在磨粒平均粒径的约150%至小于约400%的范围内,则在树脂层中不会产生剥离。 26  并且切割表面的轮廓不规则度也小至小于约8μm。 相反,如果相邻磨粒之间的平均距离L小于平均粒度的约150%,则切削效率太低而不能容易地实现约40mm / hr的切削速度。 另外,如果相邻磨粒之间的平均距离L为平均粒径的约400%以上,则树脂层 26  去皮。 并且如果平均距离L达到平均晶粒尺寸的约600%,则树脂层 26  整个线锯都剥了皮 20  有时是线锯 20  抢购。 此外,如果相邻的磨粒之间的平均距离L为平均粒径的约400%以上,则切割面的轮廓不规则度为8m以上。 考虑到这些结果,可以看出,通过设置线锯上相邻磨粒之间的平均距离L 20  在平均晶粒尺寸的约150%至小于约400%的范围内,线锯的寿命 20  可以扩展,并为切割表面获得足够的轮廓不规则度。 \n\n [0094] \n\n   表格1  平均 42 42 42 42 42 42 42 42 42  磨料的  晶粒尺寸  D(微米)  平均 63 71.4 84 105 126 168 210 252 294  谷物到  粮食  距离L  (微米)  (长/宽)×100 150 170 200 250 300 400 500 600 700  (%)  切面 4.2 3.5 3.5 3.2 4.2 8 10 12 —  个人资料  不规则  (微米)  树脂层 没有 没有 没有 没有 没有 是 是 是 抢夺  去皮? 略 间歇地 all  过度 \n\n [0095] 本发明人还分析了磨粒突出百分比的影响。 24 。 结果示于下表2。 \n\n [0096] 从表2可以看出,如果线锯 20  所使用的树脂的突出率约为71%以上, 26  开始脱落。 如果线锯 20  突出率超过约83%,则产生折断。 另外,如果线锯 20  所采用的凸出率为约71%以上,切割面的轮廓不均(卷绕)为约10m以上。 更优选地,线锯 20  使用具有约60%或更少的突出百分比的凸出部分,因为切割表面的轮廓不规则性可以减小到约8m或更少。 然而,如果使用具有小于约40%的突出百分比的线锯,则不会产生树脂层剥离,对于切割表面而言获得了足够的轮廓不规则性,但是切割效率有时会降低。 因此,突出率优选为约40%以上。 \n\n [0097] \n\n    表2  平均 42 42 42 42 42 42 42 42 42  磨料的  晶粒度D  (微米)  磨料 0 5 10 15 20 25 30 35   粮食  突出  高度(μm)  磨料 0 12 24 36 48 60 71 83   粮食  突出  百分比  (%)  切面 5.4 3.5 3.5 3.2 4.2 8 10 12 —  个人资料  不规则  (微米)  树脂层 没有 没有 没有 没有 没有 没有 是 是 抢夺  去皮? 间歇地 all  过度 \n\n [0098] 本发明人还分析了树脂层的厚度偏差百分比的影响。 26 。 结果示于下表3。 \n\n [0099] 从表3可以清楚地看到 20  使用的厚度偏差百分比约为50%,则树脂层 26  去皮。 如果线锯 20  厚度偏差百分比为约100%以上,则产生折断。 另一方面,如果线锯 20  具有小于约40%的厚度偏差百分比,在树脂层中未观察到剥离 26 并且切割表面轮廓不规则度小至约4μm或更小。 更优选地,厚度偏差百分比为约30%或更小。 但是,即使厚度偏差百分比为约40%或更小,也足以产生质量。 \n\n [0100] 应该注意的是树脂层 26  线锯的 20  可能会或可能不会剥落或折断,具体取决于线锯的张力 20  也在滚筒之间移动。 当钢丝绳锯获得上述结果时 20  钢丝锯的张力约为30N。然而,即使线锯的张力约为25 N至35 N,也可获得基本相同的结果。 \n\n [0101] \n\n    表3  平均谷物 42 42 42 42 42 42  尺寸D(μm)  理想 20 20 20 20 20 20  厚度  树脂层  (微米)  最低要求 20 17 16 15 10 5  厚度  树脂层  (微米)  最大 20 23 24 25 30 35  厚度  树脂层  (微米)  半径(μm) 90 90 90 90 90 90  芯线  厚度 0 30 40 50 100 150  偏差  百分比(%)  切面 3.5 4 4 6 12 —  个人资料  不规则  (微米)  树脂层 没有 没有 没有 是 是的,全部 抢夺  去皮? 略 过度  \n\n [0102] 接下来,主辊的优选结构 10 a , 10 b  和 10 c  线锯机 100  将描述包括线锯的零件。 \n\n [0103] 如果使用主要由水组成的冷却剂,则与使用油冷却剂的情况相比,线锯的咬合率增加(即,线锯的咬合时间更短),并且加工精度降低。 作为各种实验的结果,本发明人发现,导向槽的截面形状为 10 在聚合物层上提供的G 10 辊子的P 10 a , 10 b  和 10 c  设计成使一对倾斜表面 10 导槽S 10 G相对于径向方向限定约25度至小于约45度的角度(在本文中将其称为“倾斜角α”)。 10 滚筒R 10 a  如图2示意性所示。  7,线锯的折断 20  可以进一步减小并获得足够的加工精度。 更优选地,倾斜角为大约30度至大约35度。 \n\n [0104] 两个斜面都 10 导槽S 10 G优选地限定相对于辊的径向R在该范围内的倾斜角 10 a  如图 7.但是,如果两个斜面中至少有一个 10 S的倾斜角落入该范围内,则可以有效地使金属线的咬合最小化,并获得足够的加工精度。 \n\n [0105] 在现有技术中,其中倾斜表面的结构 10 导槽S 10 如图4所示,G定义为相对于辊的径向R的倾斜角为约45度以上。 以7为例。 采用这种结构以从引导槽充分有效地去除污泥。 10 G.此外,稀土合金包括引起脆性断裂的主相和引起延性断裂的晶界相,因此产生高的切削阻力。 另外,稀土合金具有如此重的比重,以致于不容易除去包括稀土合金在内的污泥。 因此,为了更有效地去除污泥,倾斜角优选大于约45度。 \n\n [0106] 然而,本发明人通过实验发现并证实,即使倾斜表面的倾斜角 10 S大于约45度,线咬合率没有降低太多,但是加工精度降低了。 在下文中,将参照图6描述该现象。 如已经参照图8描述的那样。  2,线锯 20  卷绕以形成在辊之间彼此平行的多条行进线 10 a , 10 b  和 10 c 。 线锯的位置 20 形成这些行进线的位置由导向槽定义 10 聚合物层中提供的G 10 辊子的P 10 a , 10 b  和 10 c 。 因此,线锯在从一条行进线到其相邻一条行进时, 20  倾斜地缠绕在导向槽上 10 G.这条斜拉的线锯 20  受到来自斜坡的扭力 10 导槽S 10 G.而且,线锯越倾斜 20  拉伸时,线锯的扭力越大 20  收到。 \n\n [0107] 图。 图8是示出倾斜表面的倾斜角之间的关系的曲线图 10 滚子导槽的S与钢丝锯的扭转角度有关。 扭转角Ω与从滚轮施加到线锯的扭转力成比例 20 。 当扭转角Ω为360度时,表明线锯已经经受了一个完整的扭转。 应该注意的是,图9所示的结果是不正确的。 通过对后述的结构进行动态模型计算而得到图8。 另外,图9所示的结果也可以。 基于两个倾斜表面的倾斜角的假设获得8 10 S彼此相等。 \n\n [0108] 另外,线锯200线 20  在一对辊(例如,辊)之间以约30N(即约3kgf)的张力拉伸。 10 b  和 10 d  如图所示。  1)具有约170mm的直径,其以约450mm的跨度布置。 线锯 20  在约120秒的循环时间内,以约2m / min的新送丝速度来回移动。 在那种情况下,线锯之后 20  已经打了190发子弹,钢丝锯从滚子上滚了下来。 \n\n [0109] 作为各种实验的结果,发现当线锯受到这样的扭转力时,在一个跨度(约450mm)内发生5次全扭转(即,Q = 1800度)。 20  穿过200条线时产生了约500次扭转。 也就是说,如果线锯受到扭转力而引起1000次扭转(= 200行×5次),则大约50%的扭转累积为实际扭转。 因此,作为图3的纵轴的扭转角Ω成为纵轴。 通过将对应于由动态模型计算估计的扭转力的扭转角乘以约0.5来获得图8。 此外,基于静态扭转断裂强度测试的结果,可以估算出当线锯中实际积累了扭转角时 20  如果达到大约1800度(即5次完全扭转),则线锯应以大约10%的概率造成断裂。 \n\n [0110] 从图可以看出,  8,作为凹槽的倾斜角度 10 G增大,扭转力(或扭转角)稳定且均匀地减小。 假设线锯 20  仅仅由于扭转力而导致断裂。 在这种情况下,如果线锯 20  相对较薄(例如,直径d为约0.19毫米),则线锯的断裂 20  通过将倾斜角设置为等于或大于大约10度可以避免这种情况。 而且,即使线锯 20  相对较厚(例如直径d为约0.25毫米),钢丝锯的断裂 20  通过将倾斜角设置为等于或大于约25度可以避免这种情况。 \n\n [0111] 但是根据实验结果,无论线锯是否 20  相对较细或较粗,一旦倾斜角超过约45度,导线折断率就不会降低太多。 另外,如果倾斜角为约45度以上,则加工精度无意地降低。 \n\n [0112] 认为原因如下。 具体来说,随着倾斜角度的增加,宽度 10 导槽W 10 G(见图6)增加,从而使线锯 20  在导槽内摆动 10 G甚至跳到相邻的导向槽 10 G.然后,将张力或扭转力施加到线锯 20  变得不均匀,从而在局部产生很大的压力。 结果,线锯 20  快照。 此外,由于线锯,加工精度也会降低 20  不能沿着凹槽行进 10 G不断。 通过使用聚氨酯橡胶层作为聚合物层来进行实验 10 P和由Yushiro Chemical Industry Co.,Ltd.生产的#830的10%水溶液作为冷却剂。 另外,与上述实验例同样地,切割了稀土类烧结磁铁工件。 \n\n [0113] 考虑到这些结果,倾斜表面 10 导槽S 10 G优选具有约25度至小于约45度的倾斜角。 另外,为了最大程度地减少线锯的咬合 20 倾斜角度优选为大约30度或更大,以使得扭转力减小。 为了获得较高的加工精度,倾斜角优选为约35度或更小。 此外,底部 10 导槽B 10 G的形状优选地使其曲率半径小于线锯的半径 20 。 \n\n [0114] 通过使用这种线锯机 100 ,线锯 20 由于上述优选实施例的效果而已经确保更长寿命的Ultra可以具有更长的寿命。 特别是当产生相对较大的扭转力时(例如,在辊对辊之间的距离短的情况下),该优选实施例实现了显着的效果。 \n\n [0115] 已经将本发明的优选实施例描述为优选地应用于线锯机。 100 。 然而,本发明决不限于那些特定的优选实施例。 可替代地,本发明还适用于使用单卷线轴的环形线锯机(例如,参见日本特开平11-198018号公报)。 \n\n [0116] 根据本发明,在通过使用主要由水组成的冷却剂的线锯机切割稀土合金的情况下,可以延长线锯的寿命。 因此,通过使用这种主要由水组成的环境友好的冷却剂,可以有效地切割制造用于音圈电动机的稀土烧结磁体的稀土烧结合金。 也就是说,可以降低稀土烧结磁体的制造成本。');
INSERT INTO `os_patent_instruction_text` VALUES (12984, 22813, '【0001】\n\n【発明の属する技術分野】\n\n本発明は、R-Fe-B系焼結磁石の製造に用いられる希土類合金およびその製造方法ならびに希土類焼結磁石に関する。\n\n【0002】\n\n【従来の技術】\n\n希土類合金の焼結磁石(永久磁石)は、一般に、希土類合金の粉末をプレス成形し、得られた粉末の成形体を焼結し、必要に応じて時効処理することによって製造される。現在、サマリウム·コバルト系磁石と、ネオジム·鉄·ボロン系磁石の二種類が各分野で広く用いられている。なかでも、ネオジム·鉄·ボロン系磁石(以下、「R-Fe-B系磁石」と称する。RはYを含む希土類元素、Feは鉄、Bはボロンである。)は、種々の磁石の中で最も高い最大磁気エネルギー積を示し、価格も比較的安いため、各種電子機器へ積極的に採用されている。\n\n【0003】\n\nR-Fe-B系焼結磁石は、主にR2Fe14Bの正方晶化合物からなる主相、Nd等からなるRリッチ相、およびBリッチ相から構成されている。なお、Feの一部がCoやNiなどの遷移金属と置換されてもよく、Bの一部がCで置換されてもよい。本発明が好適に適用されるR-Fe-B系焼結磁石は、例えば、特許文献1および特許文献2に記載されている。\n\n【0004】\n\nこのような磁石となるR-Fe-B系合金を作製するために、従来は、インゴット鋳造法が用いられてきた。一般的なインゴット鋳造法によると、出発原料である希土類金属、電解鉄およびフェロボロン合金を高周波溶解し、得られた溶湯を鋳型内で比較的ゆっくりと冷却することによって合金インゴットが作製される。\n\n【0005】\n\n近年、合金の溶湯を単ロール、双ロール、回転ディスク、または回転円筒鋳型の内面などと接触させることによって、比較的速く冷却し、合金溶湯から、インゴットよりも薄い凝固合金(「合金フレーク」と称することにする。)を作製するストリップキャスト法や遠心鋳造法に代表される急冷法が注目されている。このような急冷法によって作製された合金片の厚さは、一般に、約0.03mm以上約10mm以下の範囲にある。急冷法によると、合金溶湯は冷却ロールに接触した面(ロール接触面)から凝固し始め、ロール接触面から厚さ方向に結晶が柱状に成長してゆく。その結果、ストリップキャスト法などによって作製された急冷合金は、短軸方向のサイズが約0.1μm以上約100μm以下で、長軸方向のサイズが約5μm以上約500μm以下のR2Fe14B結晶相と、R2Fe14B結晶相の粒界に分散して存在するRリッチ相とを含有する組織を持つにいたる。Rリッチ相は希土類元素Rの濃度が比較的高い非磁性相である。\n\n【0006】\n\n急冷合金は、従来のインゴット鋳造法(金型鋳造法)によって作製された合金(インゴット合金)に比較して相対的に短い時間(冷却速度:10K/sec以上、104K/sec以下)で冷却されているため、組織が微細化され、結晶粒径が小さいという特徴を有している。また、Rリッチ相も合金組織内に微細に分散している。これらの特徴が故に、急冷合金を用いることによって、優れた磁気特性を有する磁石を製造することができる。\n\n【0007】\n\nプレス成形に供される合金粉末は、これらの合金塊(鋳造合金や急冷合金)を、例えば水素化粉砕法および/または種々の機械的粉砕法(例えば、ボールミルやアトライターが用いられる)で粉砕し、得られた粗粉末(例えば、平均粒径10μm〜500μm)を例えばジェットミルを用いた乾式粉砕法で微粉砕することによって得られる。プレス成形に供せられる合金粉末の平均粒径は、磁気特性の観点から、1.5μm〜7μmの範囲内にあることが好ましい。なお、粉末の「平均粒径」は、特にことわらない限り、ここでは、FSSS粒径を指すことにする。\n\n【0008】\n\nR-Fe-B系磁石の用途が広がるにつれて、さらなる磁気特性の向上が望まれている。特に、モータ等に用いられるために、保磁力(HcJ)を向上することが望まれている。\n\n【0009】\n\n従来から種々の方法が検討されており、NdやPrなどの軽希土類元素LRに加えてDy、HoおよびTbなどの重希土類元素HRを添加することによって、異方性磁界を高める手法が有力な方法として知られている。\n\n【0010】\n\n【特許文献1】\n\n米国特許第4,770,723号明細書\n\n【特許文献2】\n\n米国特許第4,792,368号明細書\n\n【特許文献3】\n\n特許第2787580号公報\n\n【特許文献4】\n\n特開2002-88451号公報\n\n【0011】\n\n【発明が解決しようとする課題】\n\nしかしながら、重希土類元素は、軽希土類元素よりもさらに高価であり、希土類焼結磁石の価格を上昇させるという問題がある。また、重希土類元素を添加すると残留磁束密度が\n\n低下するのでその添加量には限界がある。\n\n【0012】\n\n重希土類元素の添加に代えて、または、重希土類元素の添加に加えて、V(特許文献3)を添加する方法やNbやMo(特許文献4)を添加する方法も検討されているが、十分な保磁力を得るには至っていない。また、これらの特許文献に記載されている希土類焼結磁石の製造方法は生産性が悪いという問題もある。\n\n【0013】\n\n本発明は、上記の諸点に鑑みてなされたものであり、本発明の主な目的は、重希土類元素を必須としなくとも従来よりも保磁力の高い希土類焼結磁石を得ることにある。\n\n【0014】\n\n【課題を解決するための手段】\n\n本発明の希土類合金は、11原子%以上18原子%以下のR(Rは、Yを含む希土類元素の内から選択される少なくとも1種の希土類元素であって、少なくとも1種の軽希土類元素を含む)と、5原子%以上12原子%以下のQ(Qはボロンまたはボロンと炭素との混合物)と、0原子%超6原子%未満のM(Mは、VおよびMoの内の少なくとも1種の元素)とを含み、T(Tは、FeまたはFeとFe以外の少なくとも1種の遷移金属元素との混合物)および不純物が残部を占める組成を有するとともに、R2Fe14B型結晶構造の主相を有し、前記主相中にMが過飽和に固溶していることを特徴とする。\n\n【0016】\n\nある実施形態において、Fe-M型二元系固溶体を実質的に有しない。\n\n【0017】\n\nある実施形態において、M-Fe-B型三元系化合物相を実質的に有しない。\n\n【0018】\n\nある実施形態において、MはV(バナジウム)を含む。\n\n【0019】\n\nある実施形態において、Mの組成比率が2原子%未満である。\n\n【0021】\n\n本発明による希土類合金の製造方法は、11原子%以上18原子%以下のR(Rは、Yを含む希土類元素の内から選択される少なくとも1種の希土類元素であって、少なくとも1種の軽希土類元素を含む)と、5原子%以上12原子%以下のQ(Qはボロンまたはボロンと炭素との混合物)と、0原子%超6原子%未満のM(Mは、VおよびMoの内の少なくとも1種の元素)とを含み、T(Tは、FeまたはFeとFe以外の少なくとも1種の遷移金属元素との混合物)および不純物が残部を占める組成を有する合金溶湯を準備する工程と、前記合金溶湯を10K/sec以上10、000K/sec以下の速度で冷却凝固する工程とを包含することを特徴とする。\n\n【0023】\n\nある実施形態において、前記合金溶湯を前記冷却凝固する工程は、ストリップキャスト法で実行される。\n\n【0024】\n\n本発明の希土類合金は、上記のいずれかの方法によって製造されることを特徴とする。\n\n【0025】\n\n本発明の希土類焼結磁石は、11原子%以上18原子%以下のR(Rは、Yを含む希土類元素の内から選択される少なくとも1種の希土類元素であって、少なくとも1種の軽希土類元素を含む)と、5原子%以上12原子%以下のQ(Qはボロンまたはボロンと炭素との混合物)と、0原子%超6原子%未満のM(Mは、VおよびMoの内の少なくとも1種の元素)とを含み、T(Tは、FeまたはFeとFe以外の少なくとも1種の遷移金属元素との混合物)および不純物が残部を占める組成を有するとともに、R2Fe14B型結晶構造の主相と、M-Fe-B型三元系化合物相とを少なくとも有し、前記三元系化合物相は前記主相の周辺に偏在していることを特徴とする。\n\n【0027】\n\nある実施形態において、MはV(バナジウム)を含む。\n\n【0028】\n\nある実施形態において、Mの組成比率が2原子%未満である。\n\n【0031】\n\n【発明の実施の形態】\n\n以下、本発明によるR-Fe-B系希土類焼結磁石およびその製造方法の実施形態を説明する。\n\n【0032】\n\n本発明の実施形態のR-Fe-B系希土類焼結磁石は、11原子%以上18原子%以下のR(Rは、Yを含む希土類元素の内から選択される少なくとも1種の希土類元素)と、5原子%以上12原子%以下のQ(Qはボロンまたはボロンと炭素との混合物)と、0原子%超6原子%未満のM(Mは、VおよびMoの内の少なくとも1種の元素)とを含み、T(Tは、FeまたはFeとFe以外の少なくとも1種の遷移金属元素との混合物)、必要に応じて添加される微量添加元素および不純物が残部を占める組成を有するとともに、R2Fe14B型結晶構造の主相を有し、主相中にMが過飽和に固溶している合金を用いて製造される。\n\n【0033】\n\nここで、希土類元素Rは、軽希土類元素LRの少なくとも1種を含む。軽希土類元素LRは、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gdなどであり、NdおよびPrの少なくとも1種を含むことが好ましい。希土類元素Rは、少なくとも1種の軽希土類元素とともに、少なくとも1種の重希土類元素を含んでも良く、重希土類元素HRは、Y、Tb、Dy、Ho、Er、Tm、Yb、Luなどであり、Dy、HoおよびTbの内から選ばれる少なくとも1種を含むことが好ましく、特にDyが好ましい。\n\n【0034】\n\nまた、遷移金属元素はTi、V、Cr、Mn、Fe、Co、Niなどであり、Tは、Fe、またはFeの一部がNiおよびCoの少なくとも一方で置換されたものが好ましい。\n\n【0035】\n\n必要に応じて添加される微量添加元素は、Al、Cu、Ga、CrおよびNbの少なくとも1種であることが好ましい。添加量は微量添加元素の合計が2原子%以下であることが好ましい。磁気特性の観点からこれら元素の組成比率は上記の範囲にあることが好ましい。この基本的な組成比率は公知である。\n\n【0036】\n\n本発明による実施形態の合金の特徴は、0原子%超6原子%未満のM(Mは、VおよびMoの内の少なくとも1種の元素)を含み、R2Fe14B型結晶構造の主相中にMが過飽和に固溶していることにある。同じ組成の合金溶湯を用いても、鋳造法で合金塊(鋳造合金)を作製すると、Fe-M型二元系固溶体(デンドライト組織の初晶)が生成し、この合金塊は粉砕性が悪く、このままでは量産することができない。具体的には、Fe-V相は粘性が強く、Fe-Mo相は硬すぎるので、成形体を作製するための粉末を得ることが困難である。また、Fe-M型二元系固溶体を含まない粉末を作製するためには、一旦溶体化し、Fe-M型二元系固溶体を反応させるための熱処理をすることになるが、この熱処理を施すと、結晶粒の粗大化を招き、磁気特性が低下するという問題がある。\n\n【0037】\n\n本発明者が種々検討した結果、例えば、上記組成を有する合金溶湯を10K/sec以上、好ましくは100K/sec以上の速度で冷却凝固すると、Fe-M型二元系固溶体を実質的に含まない合金を得ることができる。また、組成に依存するが、M-Fe-B型三元系化合物相を実質的に有しない合金を得ることもできる。M-Fe-B型三元系化合物相は非磁性相なので、磁気特性の観点からはその量は多くない方が好ましく、焼結前の状態ではM-Fe-B型三元系化合物相を実質的に含まないことが好ましい。そのためには、Mの組成比率が6原子%未満であることが好ましく、4原子%未満、さらに2原子%未満であることがさらに好ましい。なお、冷却速度が10、000K/secを超えると、\n\nチル晶や等軸晶などが生成し、結晶方位がランダムに成長した組織となるため、プレス形成時に印加する配向磁界によって配向させることが困難となり、得られる焼結磁石の残留磁束密度が低下することがあるので好ましくない。冷却法としては、ストリップキャスト法、ガスアトマイズ法や遠心鋳造法などを用いることが可能で、特に量産性の観点から、ストリップキャスト法が好ましい。\n\n【0038】\n\n上述したような組成の合金溶湯を上述の冷却速度で急冷することによって得られる合金は、Mのほとんどが主相中に固溶しており、すなわち過飽和状態となっている。その結果、Fe-M型二元系固溶体やM-Fe-B型三元系化合物相を実質的に含まないか、含んだとしても非常に僅かであり、合金の粉砕性は、Mを添加しない合金と同等である。\n\n【0039】\n\nまた、この合金を粉砕することによって得られた粉末を用いて形成した成形体を例えば1000℃以上で焼結すると、主相中に過飽和に固溶したMが主相外に拡散し、B(またはC)と反応し、M-Fe-B型三元系化合物相を生成する。その結果、三元系化合物相は主相の周辺に微細に分散することになる。焼結過程で生成される三元系化合物相は、主相の周辺に均一に生成され、主相が粗大化することを抑制するように作用する。従って、本発明による実施形態の希土類焼結磁石の主相の平均粒径は、Mを添加していない希土類焼結磁石に比べて、10%〜30%程度小さくなる。なお、Mの組成比率が多くなると、比較的大きな三元系化合物相が生成されるので、微細なM-Fe-B型三元系化合物相が主相の周辺に偏在した組織を得るためには、Mの組成比率は2原子%未満であることが好ましい。\n\n【0040】\n\nまた、上述の傾向は、焼結温度に依存しないため、従来、主相の粗大化を抑制するために行われていた2段階焼成(例えば1回目:800℃以上900℃以下、2回目:1000℃以上1200℃以下)を行う必要がない。本発明の実施形態によると、従来の製造方法では、酸化反応が激し過ぎるために製造することが困難であった、主相の平均結晶粒径が1μm超5μm未満(典型的には4μm以上5μm未満)の希土類焼結磁石を得ることができる。\n\n【0041】\n\n本発明の実施形態によると、Mの添加によって、主相の粗大化が抑制されるので、主相の粗大化による磁気特性(特に保磁力)の低下が抑制される結果、重希土類元素を添加しなくとも保磁力を向上することが可能で、従来よりも少ない量の重希土類元素の添加で従来と同等の保磁力を得ること、あるいは、従来よりも高い保磁力を得ることが可能となる。さらに、本発明の希土類焼結磁石の製造に用いられる希土類合金は、ストリップキャスト法などの急冷法で作製されるため、量産性に優れ、また、M添加による粉砕性の低下もない。\n\n【0042】\n\nなお、焼結磁石の時効処理の最適温度は、Mの組成比率に依存するので、適宜設定することが好ましい。MとしてVを用いる場合、時効処理の温度は、500℃以上660℃以下の範囲内で設定することこが好ましい。\n\n【0043】\n\n【実施例】\n\n以下、本発明による希土類焼結磁石の製造方法について、実施例を挙げて説明するが、本発明は以下の実施例によって何ら限定されるものではない。\n\n【0044】\n\nNd:14.5原子%、B:6.0原子%、残部:Feおよび不可避不純物である組成を基本組成とし、Feの一部をVで置換した。\n\n【0045】\n\nVの組成比率が、0原子%、0.5原子%、2原子%、4原子%および6原子%の合金溶湯(約700℃から約1300℃)を調製し、この合金溶湯をストリップキャスト法(冷\n\n却速度:500K/sec)で冷却することによって、合金を得た。比較のために、鋳造法(平均冷却速度:1K/sec)で鋳造合金を作製した。\n\n【0046】\n\n得られた合金塊をそれぞれ水素化粉砕法で粗粉砕した後、ジェットミルを用いて微粉砕することによって希土類合金粉末(平均粒径3μm)を得た。得られた合金粉末を配向磁界(約1.0T)中でプレス成形(約0.5〜2ton/cm2)し、成形体を得た。得られた成形体を1040℃〜1100℃で約4時間、減圧希ガス雰囲気下で焼結した後、540℃から640℃で2時間にわたって時効処理を行い、焼結磁石を得た。\n\n【0047】\n\nまず、得られた合金塊の組織を光学顕微鏡(1000倍)で観察した結果を図1Aから図1Dおよび図2Aから図2Dに示す。図1Aから図1Dはストリップキャスト法を用いて作製した合金塊の組織を示し、図2Aから図2Dは鋳造法を用いて作製さした合金塊の組織を示す。Vの組成比率は、図1Aおよび図2Aは0原子%、図1Bおよび図2Bは2原子%、図1Cおよび図2Cは4原子%、図1Dおよび図2Dは6原子%である。\n\n【0048】\n\n図1Aから図1Dと図2Aから図2Dとを比較するとわかるように、鋳造法で作製した合金には、α-Fe相(V=0原子%)やFe-V相(V=2〜6原子%)の初晶やV-Fe-B相が生成しているのに対し、ストリップキャスト法で作製した合金では、α-Fe相やFe-V相の初晶やV-Fe-B相の生成は認められなかった。すなわち、ストリップキャスト法で作製した本発明の実施例による合金では、Vが主相中に過飽和に固溶している。なお、Vの組成比率が6原子%を超えるとストリップキャスト法で作製した合金においてもV-Fe-B化合物相が認められた。従って、V-Fe-B化合物相を生成させないためには、Vの組成比率が6原子%以下であることが好ましい。\n\n【0049】\n\n次に、ストリップキャスト合金から作製した焼結体の断面をEPMA(1000倍)を用いて観察した結果を図3Aから図3Dおよび図4Aから図4Dに示す。図3Aから図3Dは組成像(反射電子像)であり、図4Aから図4DはVのKα線の強度分布を示す。Vの組成比率は、図3Aおよび図4Aは0.5原子%、図3Bおよび図4Bは2原子%、図3Cおよび図4Cは4原子%、図3Dおよび図4Dは6原子%である。また、比較のために、従来の鋳造法で得られた合金を用いて作製した焼結体の断面をEPMAで観察した結果を図5Aおよび図5Bに示す。図5Aは組成像(3000倍)であり、図5BはVのKα線の強度分布を示す。なお、この焼結体の合金組成は、Nd:15原子%、B:8.0原子%、V:4原子%、残部:Feおよび不可避不純物であるが、上記の組成との差は僅かであり、形成される組織に対する影響は小さい。\n\n【0050】\n\n従来の鋳造合金を用いて作製した焼結体においては、図5Aおよび図5Bをみると明らかなように、結晶粒径が15μmを超える粗大なV-Fe-B相(図5Aの黒い部分、図5Bの白い部分)が形成されていることがわかる。\n\n【0051】\n\nこれに対し、図3Aから図3Dおよび図4Aから図4Dからわかるように、本発明による合金から作製された焼結磁石においては、比較的小さなV-Fe-B相が主相の周辺に分散していることがわかる。なお、Vの組成比率が増加するにつれてV-Fe-B相の結晶粒径が大きくなり、Vを6原子%含む焼結磁石では結晶粒径が約10μmに達するものも見られる(図4D)。一方、図4Aからわかるように、Vの組成比率が0.5原子%であると、V-Fe-B相は主相の周辺にのみ形成されている。微細なV-Fe-B相が主相の周辺に偏在した組織を得るためには、Vの組成比率は2原子%未満であることが好ましい。\n\n【0052】\n\n次に、得られた焼結磁石の磁気特性を評価した結果を表1に示す。なお、表1中の平均粒径は、カット法を用いて測定した焼結磁石の配向方向(配向磁界を印加し方向)に平行な\n\n断面における結晶粒(主相)の平均粒径を示している。\n\n【0053】\n\n【表1】\n\n\n\n【0054】\n\n表1の結果からわかるように、Vを添加した本実施例の合金を用いて作製した焼結磁石は、1050kA/m以上の保磁力を有し、また、最大磁気エネルギー積も270kJ/m3以上の値を有する。これは、Vを添加したことによって、主相の平均粒径が小さくなった(15%から30%程度)ためと考えられる。このことから、保持力の改善効果を得るためには、主相の平均粒径が5μm未満となるようVの組成比率を調整することが好ましいと考えられる。\n\n【0055】\n\n上記の実施例では、MとしてVを添加した例を示したが、MoはVと同様に、三元系化合物相を生成し、実質的に同様の傾向を有する。従って、実施例で示したのと同様に、10K/sec以上10、000K/sec以下の冷却速度で合金塊を作製することによって、保磁力を改善する効果を得ることができる。\n\n【0056】\n\nまた、上記の実施例では、重希土類元素を添加していない組成について説明したが、軽希土類元素の一部を重希土類元素(好ましくはDy)に置換しても、M(Vおよび/またはMo)の添加効果は実質的に同じであり、重希土類元素の添加による保磁力改善効果に加えて、主相の微細化によって保磁力を改善する効果を得ることができる。\n\n【0057】\n\n【発明の効果】\n\n本発明によると、重希土類元素を必須としなくとも従来よりも保磁力の高い希土類焼結磁石を得ることができる。従って、本発明によると、従来の重希土類元素添加系の保磁力を維持しつつ、重希土類元素の使用量を減少させること、あるいは、従来よりも保磁力の高い希土類焼結磁石を提供することができる。本発明の希土類焼結磁石は、モータなど高い保磁力が要求される用途に好適に用いることができる。また、本発明による希土類合金の製造方法は、特許文献3および4に記載されている製造方法に比べ量産性に優れるという利点を有している。\n\n【図面の簡単な説明】\n\n【図1A】ストリップキャスト法を用いて作製した合金塊(V=0原子%)の組織を示す顕微鏡写真である。\n\n【図1B】ストリップキャスト法を用いて作製した合金塊(V=2原子%)の組織を示す顕微鏡写真である。\n\n【図1C】ストリップキャスト法を用いて作製した合金塊(V=4原子%)の組織を示す顕微鏡写真である。\n\n【図1D】ストリップキャスト法を用いて作製した合金塊(V=6原子%)の組織を示す顕微鏡写真である。\n\n【図2A】鋳造法を用いて作製した合金塊(V=0原子%)の組織を示す顕微鏡写真であ\n\nる。\n\n【図2B】鋳造法を用いて作製した合金塊(V=2原子%)の組織を示す顕微鏡写真である。\n\n【図2C】鋳造法を用いて作製した合金塊(V=4原子%)の組織を示す顕微鏡写真である。\n\n【図2D】鋳造法を用いて作製した合金塊(V=6原子%)の組織を示す顕微鏡写真である。\n\n【図3A】ストリップキャスト合金から作製した焼結体(V=0.5原子%)の断面のEPMAによる組成像を示す写真である。\n\n【図3B】ストリップキャスト合金から作製した焼結体(V=2原子%)の断面のEPMAによる組成像を示す写真である。\n\n【図3C】ストリップキャスト合金から作製した焼結体(V=4原子%)の断面のEPMAによる組成像を示す写真である。\n\n【図3D】ストリップキャスト合金から作製した焼結体(V=6原子%)の断面のEPMAによる組成像を示す写真である。\n\n【図4A】ストリップキャスト合金から作製した焼結体(V=0.5原子%)の断面のEPMAによるVのKα線の強度分布を示す写真である。\n\n【図4B】ストリップキャスト合金から作製した焼結体(V=2原子%)の断面のEPMAによるVのKα線の強度分布を示す写真である。\n\n【図4C】ストリップキャスト合金から作製した焼結体(V=4原子%)の断面のEPMAによるVのKα線の強度分布を示す写真である。\n\n【図4D】ストリップキャスト合金から作製した焼結体(V=6原子%)の断面のEPMAによるVのKα線の強度分布を示す写真である。\n\n【図5A】従来の鋳造法で得られた合金を用いて作製した焼結体(V=4原子%)の断面のEPMAによる組成像を示す写真である。\n\n【図5B】従来の鋳造法で得られた合金を用いて作製した焼結体(V=4原子%)の断面のEPMAによるVのKα線の強度分布を示す写真である。', '【0001】\n\n技术领域\n\n本发明涉及一种用于制备R-Fe-B基烧结磁铁的稀土合金,以及用于制造相同的方法以及稀土烧结磁体的方法。\n\n【0002】\n\n发明背景\n\n稀土合金的烧结磁体(永磁体)通常通过压制稀土合金的粉末制造,烧结所得粉末的形成的粉末,并根据需要凝聚。目前,在每个场中广泛用于两种类型的钐钴基磁体和钕铁和硼基磁体。其中,基于钕 - 铁/硼基磁体(下文中称为“R-Fe-B基磁体”。R是含有Y的稀土元素,Fe是铁,B是硼。)是不同的磁铁由于显示了最高最大磁能产品并且价格相对较低,因此各种电子设备积极采用。\n\n【0003】\n\nR-Fe-B基烧结磁铁主要是r2Fe.14它由富含R的富相位组成,该相由B平方化合物,Nd等组成,富含B的相。 Fe的一部分可以被诸如CO或Ni的过渡金属代替,或者B的一部分可以被C取代。适当地施加本发明的基于R-Fe-B的烧结磁体,例如,专利文献1和专利文献2中描述。\n\n【0004】\n\n为了生产R-Fe-B基合金,通常使用铸锭铸件。根据一般的铸锭铸造方法,通过减少稀土金属,电解质和硼隆合金,即作为起始材料,并在模具中相对缓慢地冷却所得熔融金属的合金铸锭。\n\n【0005】\n\n近年来,通过接触单辊,硼驼,旋转盘或旋转圆柱形模具,以及用锭(“合金薄片”(“合金薄片”的凝固合金(“合金薄片”)相对快速地冷却合金的熔融金属。它将被称为产生)的剥离铸造方法,并且由离心铸造方法表示的淬火方法引起关注。通过这种猝灭产生的合金片的厚度通常在约0.03mm或更大约10mm或更小的范围内。根据淬火方法,合金熔融金属开始与冷却辊接触的表面(辊接触表面)凝结,并且晶体从辊接触​​表面沿厚度方向生长。结果,在短轴方向上由条形铸造方法等产生的突然冷却合金为约0.1μm以上且约100μm或更小,并且长轴方向的尺寸为约5μm或更高小于约500μm或更小。2Fe.14b晶相和r2Fe.14B含有富含R的富相的组织分散在结晶相的晶界中。富含R的相是具有相对高浓度的稀土元素R的非磁性相。\n\n【0006】\n\n淬火合金相对较短的时间(冷却速度:10k / sec或更长时间,104由于它被k / sec或更少冷却,因此组织小型化并且具有晶粒尺寸小的特征。而且,R-富含R的相块在合金组织中精细地分散在合金组织中。因此,通过这些特征,可以通过使用淬火合金来制造具有优异磁性的磁体。\n\n【0007】\n\n用于压制成形的合金粉末用这些合金块(铸造合金和淬火合金)粉碎,例如,氢化和/或各种机械研磨方法(例如,使用球磨机和吸引仪)所获得的粗粉(例如,通过使用喷射磨机将其通过干磨法放置来获得10μm至500μm的平均粒径。从磁性特性的观点来看,用于压制成型的合金粉末的平均粒径优选为1.5μm至7μm。另外,除非另有说明,否则粉末的“平均粒径”是指本文的FSSS粒度。\n\n【0008】\n\n作为R-Fe-B磁铁的应用,需要进一步改善磁性。特别地,希望改善矫顽力(HCJ),因为它用于电动机等。\n\n【0009】\n\n传统上,已经考虑了各种方法,除了Nd和乳状地球元素LR之外,例如Nd和Pr,通过添加重稀土元素HR,例如Dy,Ho和Tb,增强各向异性磁场的方法是强大的。它被称为一种方法。\n\n【0010】\n\n专利文献1\n\n美国专利No.4,770,723\n\n专利文献2.\n\n美国专利No.4,792,368\n\n专利文献3.\n\n专利号2787580问题\n\n专利文献4.\n\nJP-A-2002-88451\n\n【0011】\n\n本发明要解决的问题\n\n然而,重质稀土元素比成种稀土元素更昂贵,并且存在稀土烧结磁体的价格提高的问题。另外,当添加重稀土元素时,残留的磁通量密度是\n\n因为它降低,添加量有限。\n\n【0012】\n\n或者,除了添加重稀土元素之外,还是除了添加重稀土元素之外,还添加V(专利文献3)的方法,以及添加Nb和Mo的方法(专利文献4)尚未达到足够的矫顽力。还存在稀土烧结磁体的生产方法的问题,这些专利文献中描述的生产率差。\n\n【0013】\n\n本发明已经鉴于上述几点而作,并且本发明的主要目的是在罕见的地球元素至关重要的情况下,本发明的主要目的是获得具有高矫顽力的稀土烧结磁体。\n\n【0014】\n\n[解决问题的手段]\n\n本发明的稀土合金是11原子%以上,18个原子%或更少的R(R表示选自含有Y的稀土元素的至少一种稀土元素并包含至少一个成熟的地球元素Q(Q为5原子%以上,12原子%以下是1 q(硼或硼的混合物和碳)和m(m以m)小于0原子%的0原子%,至少一种V.并且Mo和T(t是与Fe或Fe和Fe以外的至少一个过渡金属元素的混合物)哦与组合物,杂质占据其余部分2Fe.14其特征在于,提供了B型晶体结构的主相,并且M在主阶段固有地溶解在过饱和期间。\n\n【0016】\n\n在某些实施方案中,Fe-M型二元固溶溶液基本上不是没有游离的。\n\n【0017】\n\n在某些实施方案中,M-Fe-B三元化合物相没有基本上不含。\n\n【0018】\n\n在一个实施方案中,M包括V(钒)。\n\n【0019】\n\n在一个实施方案中,M的组成比小于2原子%。\n\n【0021】\n\n根据本发明的稀土合金的制造方法是11原子%以上,18原子%或更少的R(R是选自含有Y的稀土元素的至少一个稀土元素并包含至少一个成熟的地球元素Q(Q为5原子%以上,12原子%以下是1 q(硼或硼的混合物和碳)和m(m以m)小于0原子%的0原子%,至少一种V.并且Mo和T(t是与Fe或Fe和Fe以外的至少一个过渡金属元素的混合物)哦制备具有组合物的合金熔融金属的方法,其中杂质占据其余部分,包括冷却并以10k / sec或更高,10,000k / sec或更低的速率冷却并固化合金熔融金属。\n\n【0023】\n\n在一个实施方案中,合金熔融金属的冷却凝固步骤通过带材铸造方法进行。\n\n【0024】\n\n本发明的稀土合金的特征在于它由上述任何方法制备。\n\n【0025】\n\n本发明的稀土烧结磁体是11原子%或更多,R(R表示选自含有Y的稀土元素的至少一种稀土元素并包含至少一个成熟的地球元素Q(Q为5原子%以上,12原子%以下是1 q(硼或硼的混合物和碳)和m(m以m)小于0原子%的0原子%,至少一种V.并且Mo和T(t是与Fe或Fe和Fe以外的至少一个过渡金属元素的混合物)哦与组合物,杂质占据其余部分2Fe.14B型晶体结构和M-Fe-B型三元化合物相的主阶段至少为,三元化合物相的特征在于它在主阶段周围不均匀地分布。\n\n【0027】\n\n在一个实施方案中,M包括V(钒)。\n\n【0028】\n\n在一个实施方案中,M的组成比小于2原子%。\n\n【0031】\n\n发明内容\n\n在下文中,将描述根据本发明的R-Fe-B基稀土烧结磁体的实施例及其制造方法。\n\n【0032】\n\n本发明实施方案的R-Fe-B稀土烧结磁铁R(R是至少一种选自含有Y)或更低的稀土元素的稀土元素,R(R)和Q(Q为5原子%以上和12个原子%或更少是硼或硼的混合物,碳的混合物,m(m)小于0原子百分比小于V和Mo中的至少一个。包括元素,t(t是a与Fe或Fe和Fe以外的至少一种过渡金属元素的混合物,以及根据需要添加的微量加载元件和添加的杂质使组合物占据其余部分。,r2Fe.14它具有B型晶体结构的主阶段,并且使用该合金制造,其中M在主相中固有地溶解在过饱和中。\n\n【0033】\n\n这里,稀土元素R包括小稀土元素LR中的至少一个。光稀土元素LR优选为Y,La,Ce,Pr,Nd,Pm,Sm,欧盟,Gd等,并且优选包括Nd和Pr中的至少一个。稀土元素R可包括至少一种重稀土元素以及至少一个小稀土元素,重质稀土元素HR是Y,Tb,Dy,Ho,ER,Tm,Yb,Lu等优选,优选从Dy,HO和Tb中选择的至少一种,并且特别优选Dy。\n\n【0034】\n\n过渡金属元素是Ti,V,Cr,Mn,Fe,Co,Ni等,并且T优选在Ni和Co中的至少一种中的Fe或Fe的一部分。\n\n【0035】\n\n根据需要添加的次掺杂元素优选为Al,Cu,Ga,Cr和Nb中的至少一种。添加量优选为2原子%或更少的量的量的量的总量。从磁性特性的观点来看,这些元素的组成比优选在上述范围内。这种基本的组成比是已知的。\n\n【0036】\n\n根据本发明的实施方案的合金的特性包括小于0原子%,m(m,在V和Mo内的至少一个元素,r2Fe.14在B型晶体结构的主阶段,M是固体的过饱和溶液。即使采用相同的组合合金熔融金属,如果通过铸造方法生产合金质量(铸造合金),则形成Fe-M Di-M二元固溶体(枝晶组织的初级晶体),并且该合金质量差。不能批量生产。具体地,由于Fe-V相强烈粘稠,因此Fe-Mo相太硬,因此难以获得用于制造模塑体的粉末。另外,为了产生不含Fe-M Di-M二元固溶体的粉末,它将是可溶的,但进行热处理以反应Fe-M二元固溶体,但这种热处理是进行。并且,引起了晶粒的粗化,磁特性降低了粗糙的问题。\n\n【0037】\n\n作为本发明的各种考虑因素,例如,用具有上述组合物的合金熔融金属以10k / sec或更高,优选100k / sec或更高,基本上不含Fe-M二元固体的合金熔融金属冷却溶液。可以获得合金。而且,尽管组合物取决于组合物,但可以获得基本上不含M-Fe-B三元化合物相的合金。由于M-Fe-B三元化合物相是非磁性相,因此优选从磁特性的观点出发,并且在烧结前的状态下,M-Fe-B三元化合物相是优选基本上是免费的。为此目的,优选的是M的组成比小于6原子%,更优选小于4原子%且小于2原子%。当冷却速率超过10,000 k / sec时,\n\n由于形成了冷却晶体或均匀晶体等,并且晶体取向变为随机生长的组织,因此难以通过在压制时施加的取向磁场,以及残余磁通密度难以进行所得烧结磁体减少。由于存在,这是不可取的。作为冷却方法,可以使用条带铸造方法,气体雾化方法,离心铸造方法等,并且从大规模生产率的观点来看,特别优选具有条带铸造方法。\n\n【0038】\n\n通过在上述冷却速率下描述的组合物的合金熔融金属获得的合金,大部分M是主阶段的固体溶液,即,是过饱和状态。结果,即使Fe-M DI-M DI-M二元固溶体或M-Fe-B三元化合物基本上基本上不含Fe-M DI-M DI-M二元固体溶液也是非常轻微的,并且添加了合金的粉碎。它相当于非合金。\n\n【0039】\n\n另外,当通过使用通过研磨而获得的粉末形成的形成的体在1000℃或更高时烧结时,M在主相中的主相中扩散,B(或C)与a反应M-Fe-B三元化合物相。结果,三元化合物相围绕主阶段精细分散。在烧结过程中产生的三元化合物相均匀地围绕主相均匀产生,并作用以抑制主阶段的粗化。因此,与本发明的实施方案的稀土烧结磁体的主相的平均粒径相比,与不添加M的稀土烧结磁体相比,减少了约10%至30%。另外,当m增加的组成比时,产生相对大的三元化合物相,因此细m-Fe-B三元化合物相围绕主相分布。优选地,m的组成比小于2原子%。\n\n【0040】\n\n此外,由于上述趋势不依赖于烧结温度,两步烧制(例如,第一次:800°C以上且900°C或更低,第二时间:1000),这是传统上的执行不需要进行°C至1200℃)。根据本发明的一个实施方案,在传统的制造方法中,主阶段的平均晶粒尺寸小于1μm(通常为4μm或更大),因为氧化反应强烈罕见可以获得小于5μm的地球烧结磁体。\n\n【0041】\n\n根据本发明的实施方案,通过添加M抑制主相的粗化,因此由于抑制由于粗化而抑制磁性特性(尤其矫顽力)的降低而加入重稀土元素主阶段。然而,矫顽力可以得到改善,并且可以通过添加少量重稀土元素来获得比以前的少量重稀土元素等于现有技术的矫顽力,或者获得比在中更高的矫顽力过去。。此外,由于用于制备本发明的稀土烧结磁体的稀土合金是通过诸如条带铸造方法的淬火方法制备的,因此质量生产率优异,并且不再减少粉碎性能添加M.\n\n【0042】\n\n由于烧结磁体的老化过程的最佳温度取决于M的组成比,因此优选适当地设定它。当V用作M时,优选将老化处理的温度设定在500℃或更高的范围内和660℃或更低的范围内。\n\n【0043】\n\n【例子】\n\n在下文中,将通过实施例描述制造根据本发明的稀土烧结磁体的方法,但是本发明不受以下任何一个实施例的限制。\n\n【0044】\n\nND:14.5原子%,B:6.0原子%,剩余部分:Fe和不可避免的杂质是碱性组成,并且将部分Fe替换为V.\n\n【0045】\n\nV的组成比为0原子%,0.5原子%,2原子%,4原子%和6原子%合金熔融金属(约700℃至约1300℃)和条带铸造方法(冷)\n\n通过用增强液冷却来获得合金:500k / sec)。用铸造(平均冷却速率:1 k / sec)生产铸造合金以进行比较。\n\n【0046】\n\n通过氢化研磨方法,所得合金质量大致研磨,然后使用喷射研磨机精细粉碎,得到稀土合金粉末(平均粒径为3μm)。用所得合金粉末在取向磁场(约1.0t)(约0.5至2吨/厘米/厘米2,获得模塑体。将得到的模塑产品在1040℃下烧结至1100℃。在真空稀气气氛下约4小时,然后在540℃至640℃下老化2小时以获得烧结磁体。\n\n【0047】\n\n首先,在图1和2中示出了观察所得合金质量(1000次)的所得合金质量的结果。图1A-1D和2A至2D。图1A至1D示出了使用带材铸造方法产生的合金块的组织,以及图2A-2D示出了使用铸造方法制备的合金块的组织。在V的组成比中,图1A和2A的零原子%,图1B和图2B是零原子%。图1B和图2B是2B。图2B是2个原子%,图。图1C和2C是4原子%,图1D和图2C。图1D和图2D是6个原子%。2D是6原子% 。\n\n【0048】\n\n通过比较图4和图5a至1d和2a至图2a可以理解。如图1a至1d和2a到图2th。2D,用于由铸造产生的合金的α-Fe相(V = 0原子%)和Fe-V相(V = 2至6)方法。虽然产生原子%)和v-Fe-B的原始晶体,但由条带铸法产生的合金,α-Fe相和Fe-V相的初级晶体和V-Fe-B相。 。没有一代人被观察到。也就是说,在根据本发明实施方案的合金中,通过条带铸造方法制造,v溶解在主相中的主相中。当V的组成比超过6原子%时,还在带钢铸造方法生产的合金中观察到V-Fe-B复合相。因此,为了不产生V-Fe-B复合相,优选的v的组成比为6原子%或更小。\n\n【0049】\n\n接下来,使用EPMA(1000次)观察由带材铸造合金制造的烧结体的横截面的结果如图1和图2所示。3A-3D和4A至4D。图3A至3D是组成图像(反射电子),和图3和图4.图4A至4D示出了Vkα光线的强度分布。在V的组成比中,图3A和4A的组成比为0.5原子%,图3B和图3B。图3B和图3B是2个原子%,图4B。图3C和4C是4原子%,图3C和4C是4个原子%,图3C和4C。3D和图4D是6个原子% 。此外,为了比较,在EPMA中示出了观察使用通过传统铸造方法获得的合金制备的烧结体的横截面的结果。图。图5A和5B。图。图5A是组成图像(3000×),图5B是图5B的kα辐射的强度分布。烧结体的合金组合物是Nd:15原子%,B:8.0原子%,V:4原子%,残余部分:Fe和不可避免的杂质,但与上述组成的差异是轻微的,对组织的影响是小。\n\n【0050】\n\n在使用常规铸造合金生产的烧结体中,从图1和图2中可以看出。如图5A和5B所示,晶粒尺寸大于15μm的粗V-Fe-B相(图5A的黑部分,可以看到图2的白色部分包括:形成图5B。\n\n【0051】\n\n另一方面,从图1和图2中可以看出。图3A至3D和图3A至3D。图4A至4D,在根据本发明的合金制成的烧结磁体中,相对较小的V-Fe-B相围绕主阶段分散可以看出随着V的组成比增加,V-Fe-B相的晶粒尺寸变大,晶粒尺寸在含有6个原子%V(图4D)的烧结磁体中达到约10μm。另一方面,从图1中可以看出。如图4A所示,如果V的组成比为0.5原子%,则仅在主阶段形成V-Fe-B相。为了获得围绕主阶段不均匀分布的组织,V的组成比优选小于2原子%。\n\n【0052】\n\n接下来,评估所得烧结磁体的磁性的结果如表1所示。表1中的平均粒径平行于使用切割方法测量的对准方向(取向磁场的取向磁场)。\n\n示出了横截面中的晶粒(主阶段)的平均粒径。\n\n【0053】\n\n【表格1】\n\n\n\n【0054】\n\n从表1的结果可以看出,使用该实施例的合金制造的烧结磁铁具有1050ka / m或更大的矫顽力,并且最大磁能产物也是27​​0kJ / m3以上具有上述值。这被认为是由于添加V来降低主相的平均粒径(约15%至30%)。由此,为了获得保持力的改善效果,认为优选调节V的组成比,使得主阶段的平均粒径小于5μm。\n\n【0055】\n\n在上述实施方案中,其中加入V作为m的实例,但是Mo是三元化合物相以及v,其具有基本相似的趋势。因此,如实施例所示,通过以10k / sec或更高的冷却速率或10,000k / sec或更低的冷却速率使合金质量能够获得改善矫顽力的效果。\n\n【0056】\n\n此外,尽管在所述实施例中,但是在所述实施例中对不添加重稀土元素的组合物,但是M(v和/或mo),但也是迷你稀土元素(优选Dy)的一部分)基本上是同样,除了通过加入重稀土元素的矫顽力改善效果,还可以通过主阶段的小型化获得改善矫顽力的效果。\n\n【0057】\n\n【发明效果】\n\n根据本发明,可以获得比现有技术的高矫顽力以及重稀土元素的稀土烧结磁体。因此,根据本发明,可以减少重物稀土元素使用量,并提供比过去的高矫顽镍烧结磁体,同时保持传统的重型稀土元素添加剂系统的矫顽力。可以完毕。本发明的稀土烧结磁铁可以适用于需要高矫顽力如电动机的应用。此外,根据本发明的稀土合金的制造方法具有优点:与专利文献3和4中所述的制造方法相比,其具有优异的质量生产率。\n\n[简要描述;简介]\n\n图。1A它是一种显微照片,显示使用带材铸造方法产生的合金质量(v = 0原子%)的组织。\n\n图。1B它是一种显微照片,显示使用带材铸造方法制备的合金质量(V = 2原子%)的组织。\n\n图1C.它是一种显微照片,显示使用带铸造方法生产的合金质量(V = 4原子%)的组织。\n\n1D.它是一种显微照片,显示使用带材铸造方法生产的合金质量(V = 6原子%)的组织。\n\n图2A用铸造方法制造的合金块(V = 0原子%)的显微照片\n\n。\n\n2B.它是一种显微照片,显示使用铸造方法生产的合金质量(V = 2原子%)的组织。\n\n2C它是一种显微照片,其显示使用铸造方法生产的合金质量(V = 4原子%)的组织。\n\n图2D.它是一种显微照片,其表示使用铸造方法生产的合金质量(V = 6原子%)的组织。\n\n图3A图3是表示由由带材铸造合金制造的烧结体(v = 0.5原子%)的横截面的EPMA的组成图像的照片。\n\n图3B.图3是显示由条带铸造合金产生的烧结体(V = 2原子%)的EPMA的组成图像的照片。\n\n图3C.图3是显示由带钢铸造合金制备的烧结体(V = 4原子%)的横截面的EPMA的组成图像的照片。\n\n图3d图3是表示由由带钢铸造合金制造的烧结体(V = 6原子%)的横截面的EPMA的组成图像。\n\n图4A图3是表示由条带铸造合金产生的烧结体(v = 0.5原子%)的ePma的kα射线的强度分布的照片。\n\n图4B.图3是表示由条带铸造合金产生的烧结体(v = 2原子%)的EPMA的VKα射线的强度分布的照片。\n\n图4C.图3是表示由条带铸造合金产生的烧结体(v = 4原子%)的EPMA的VKα射线的强度分布的照片。\n\n图4D.图3是表示由条带铸造合金产生的烧结体(V = 6原子%)的ePMA的VKα射线的强度分布。\n\n图5A图3是表示使用通过传统铸造方法获得的合金生产的烧结体(V = 4原子%)的EPMA的组成图像的照片。\n\n图5B.图3是表示使用通过传统铸造方法获得的合金生产的烧结体(v = 4原子%)的EPMA的VKα射线的强度分布。');
INSERT INTO `os_patent_instruction_text` VALUES (12985, 22814, '【0001】\n\n【発明の属する技術分野】\n\n本発明は、多段成形を行う必要のない極異方性リング磁石および成形金型に関する。\n\n【0002】\n\n【従来の技術】\n\nサーボモータ等の回転機にラジアル異方性リング磁石や極異方性リング磁石が多く使用されている。極異方性リング磁石を使用した場合、同一寸法のラジアル異方性リング磁石に比べて高い表面磁束密度を得られ、小型でより高性能のモータを提供することができる。例えば特公平8-28293号公報には極異方性リング磁石の記載がある。\n\n永久磁石を用いたモータにおいては、、固定子と回転子の間の磁気抵抗が回転角によって変化するためにコギングが発生しやすい。特に極異方性リング磁石の磁極数が4〜8極と少ない場合にはコギングトルクが著しいものとなる。このコギングトルクは磁束密度の2乗に比例するので、コギングトルクを小さくするためには、ギャップ部の周方向の磁束波形を滑らかにすることが必要である。ラジアル異方性リング磁石を使用する場合、着磁の際にスキュー着磁とすることによりコギングを抑制する手法が一般的である。\n\nしかしながら表面磁束密度の高い極異方性リング磁石ではラジアル異方性リング磁石と異なり、成形の配向時から着磁可能な方向が決まってしまう。配向は圧縮成形をしながら行うため成形体の磁極間のバラツキが出易く、また、着磁での調整を行うことができない。よってコギングを抑制するための対策が必要である。\n\n例えば特公平8-28293号公報には磁極数Pが4〜8の極異方性リング磁石が記載され、また、各磁極部が軸線に対して一律に5°以上傾斜している極異方性リング磁石が記載されている。しかしながら、この極異方性リング磁石を実際に製造すると、磁極部が軸線に対して傾斜しているため、金型中で磁粉を配向しながら圧縮成形する際に、初期段階で配向した時の磁極部形状が圧縮されるにつれて変形したり、磁極との磁気吸引力によって部分的に再度配向して配向が乱れるなどの問題があった。又、焼結時の収縮率のバラツキにより磁極同士の間隔およびスキュー角がバラツキ、その結果モータのコギングトルクを一定にしづらいという欠点があった。\n\nこの対策として複数の極異方性リング磁石を用い、磁極をずらして軸方向に積層する例が見られる。特開平8-340652号公報には極異方性リング磁石を軸線方向に複数個に分割して磁極をずらしたあと着磁して、みかけのスキュー着磁をしたサーボモータの記載があるが、コギングトルクを小さくするためのずらし角度の制御に関する記載がない上、各々の極異方性リング磁石を固着する手間がかかる。極異方性リング磁石の製造コストは安いがロータへの組み付け加工費が別途必要である。\n\nまた、特開平11-8960号公報では、ずらし角度を制御するために磁界発生部の磁気センターを、複数個の治具間においてコギングトルクが逆位相になる角度だけずらした磁極ずらし治具を用いることによりずらし角度を制御している。この方式では治具から抜き出すときに極異方性リング磁石が回転しないように接着等の固定手段をとる必要があり生産性が悪い。\n\n【0003】\n\n【発明が解決しようとする課題】\n\nよって本発明の課題は、磁極の間隔のバラツキが少なく、もってコギングトルクのバラツキが小さく、多段成形せずに得られる極異方性リング磁石および成形金型を提供することである。\n\n【0004】\n\n【課題を解決するための手段】\n\n本発明の極異方性リング磁石は、1段成形してなる極異方性リング磁石であって、前記リング磁石は軸方向に沿う複数の磁極を有し、及び前記リング磁石の1磁極毎に、軸方向の両端にそれぞれ軸方向に平行な磁極部を有し、更に前記の平行な磁極部の間に軸方向に対して傾斜したらせん状磁極部を有し、かつ前記らせん状磁極部の軸方向長さは前記の平行な磁極部の軸方向長さより短いことを特徴とする。\n\n前記本発明の極異方性リング磁石において、前記らせん状磁極部における隣接する磁極の境界線(中立線)に対し、前記の平行な磁極部における隣接する磁極の境界線(中立線)の傾斜角度αが85°以下であることを特徴とする。\n\n多段成形による接合部があるか否かは本発明の極異方性リング磁石の軸方向に沿って表面磁束密度を測定することで判別可能である。つまり1段成形であれば成形する際に磁粉の供給密度はほぼ一律になるため、焼結しても前記極異方性リング磁石の胴部分で密度が変わることがない。よって前記極異方性リング磁石の端部での表面磁束密度は落込むものの、胴部分で表面磁束密度が5%以上ばらつくことはない。多段成形になるとキャビティ中の磁粉がパンチにより複数回に分けて圧縮されるため、パンチにより押された部分と新たに磁粉が供給された部分で密度差が若干変わり、胴部分で表面磁束密度が5%以上さらには8%以上ばらつく。よってこの表面磁束密度を測定することによって多段成形か1段成形かの違いを判別可能である。\n\n【0005】\n\n本発明の成形金型は、極異方性リング磁石の1段成形体を成形する金型であって、\n\n軸方向に貫通した中空部を有するダイスと、前記中空部に面した前記ダイスの内周面に形成された複数の溝と、前記溝に埋設された磁場発生用コイルと、前記ダイスの内周面及び前記溝を覆うように配置されたスペーサと、前記ダイスの中空部に配置されて前記ダイスの軸方向に沿って延設されたコアと、前記スペーサと前記コアとの間に形成されたキャビティとを有し、\n\n成形時の前記キャビティに発生する極異方性配向磁束のうちの1磁極に対応する極異方性配向磁束は、前記磁場発生用コイルの1つのコイル毎に発生し、前記1つのコイルにおける前記ダイスの軸方向に沿う巻線部分は、前記ダイスの軸方向に平行な巻線部分と、前記の平行な巻線部分の間に形成された前記ダイスの軸方向に対して傾斜した巻線部分とからなることを特徴とする。\n\n前記本発明の成形金型において、前記の傾斜した巻線部分の軸方向長さは前記の平行な巻線部分の軸方向長さより短いことを特徴とする。\n\n【0006】\n\n【発明の実施の形態】\n\nここで本発明の利点を図1、2および図7を用いて詳細に説明する。図2および図7中、符号1は金型、2b,2c,2dは配向磁場を得るためのコイル、3は上パンチ、4は下パンチである。上パンチ3、下パンチ4および金型1により囲まれたキャビティ10内に成形材料5aを充填している。また、図中の符号6は成形時の配向による磁極と磁極との境界を示す中立線である。らせん状配向させた極異方性リング磁石を得る場合、従来の技術および図7で示したように軸に対して磁極部がほぼ一律傾斜するように配向すると、成形始めの段階(図7(a))では配向磁場に沿って成形材料5aが配向されるが、上パンチ3と下パンチ4により成形材料5aが圧縮された成形後の段階(図7(b))では最初の配向磁場とは異なる角度に中立線6aがひずむため、磁極間距離もこのひずみによりバラツキが出易い。成形材料が最終の成形品形状にまで圧縮させられた後に配向磁場をかけても成形材料は配向しない。逆に成形圧縮による磁極部のひずみを計算に入れて圧縮成形しようとすると、金型キャビティ内に入れる成形材料の量を厳密に制御する必要があり、工業生産上では実質困難である。\n\n【0007】\n\n本発明の極異方性リング磁石では図1(模式的に円筒上で示す)に示すように、軸方向に平行な磁極部(以後、平行磁極部とする)AおよびCを持つようにコイル2bが金型内に具備される。これにより図2に示すように圧縮成形により成形材料が押し縮められても磁極部AおよびCでの中立線の幅,方向は実質変わらず密度が向上するだけである。らせん状配向させた磁極部は従来に比べて僅かであり、磁極バラツキを抑制した極異方性リング磁石を製造可能である。\n\n【0008】\n\n距離をあけずに相互の平行磁極部同士を接合すると、焼結時の収縮率による割れが発生しやすい。これを抑制するためにはある程度のらせん状配向させた磁極部の幅を設けることが好ましい。当然ながら磁極部は連続するように平行磁極部とらせん状磁極部を並べればこの焼結時の収縮率による割れをさらに低減できる。この際の配向コイルは図1に示す中立線6aに重なるように金型内に巻線すればよく、極異方性リング磁石の端部から端部まで通して1磁極1つのコイルで構成可能である。\n\n【0009】\n\n上記製法により図1に示すような磁極の位置および反転位置(中立線)が両端部で軸方向に平行で、且つ周方向に斜めに走る極異方性リング磁石が得られる。成形の際には、らせん状配向する位置の磁粉が金型に対して動かないようにキャビティ内の磁粉を両端から同じ距離だけ押しこむ圧縮成形をすることにより、配向の乱れが非常に小さい、一定のずれ角を有する1段成形してなる極異方性リング磁石用成形体を得られる。\n\n【0010】\n\n図1中の中間部分Bの軸方向長さは磁極間のバラツキが出易いので短い方が好ましいが、あまりに短いと焼結時の収縮率による割れを抑制できなくなる。成形材料、配向度などにより適宜選択する必要がある。例えばR-T-B系(RはYを含む希土類元素の少なくとも1種である)極異方性リング磁石において、平行磁極部における隣接する磁極の境界線(中立線)に対するらせん状磁極部における隣接する磁極の境界線(中立線)の傾斜角度αは85°以下が好ましい。好ましい傾斜角度は80°以下、さらに好ましくは70°以下である。軸方向長さは0.3mm以上とすることが好ましい。\n\nまた、比較的焼結割れしやすいフェライト磁石において、傾斜角度αは60°以下が好ましい。好ましい傾斜角度は55°以下、さらに好ましくは45°以下である。軸方向長さは0.5mm以上とすることが好ましい。\n\n多段成形のものと比較すると1つの成形機に対する単位時間での成形個数が大幅に向上し、多段成形品よりも磁極部のバラツキを抑制可能である。\n\n【0011】\n\nただし、ボンデッド磁石であれば成形後の硬化工程を行っても収縮率による割れは発生しずらい。よって図8に示すような中立線6bをもつ極異方性リング磁石を得ることが可能である。また、配向磁場を低目にかけ、収縮割れを抑制することも可能である。これによりコギングトルクの小さい極異方性リング磁石を得ることができる。\n\n【0012】\n\n本発明の極異方性リング磁石は例えば以下の工程により製造される。\n\n(1)焼結磁石:原料粉作製-給粉-極異方性磁場中成形-焼結(必要により熱処理、加工、表面処理が追加される)\n\n(2)ボンデッド磁石\n\n(圧縮成形):原料コンパウンド作製-給粉-極異方性磁場中成形-硬化(必要により加工、表面処理が追加される)\n\n(射出成形):原料コンパウンド作製-極異方性磁場中射出成形-冷却(必要により加工、表面処理が追加される)\n\n【0013】\n\n本発明の極異方性リング磁石を幾何学的に示す。図1に示すように極異方性リング磁石の中心軸をr-θ-z円筒座標系のz軸に一致させ、極異方性リング磁石の一端をz=0平面に接触させ、前記極異方性リング磁石をz軸に垂直に仮想的に3分割しzの小さい方からA,B,Cと名づけたとき、Aの磁極部のθ成分がz軸方向にほぼ一定のθaで、反\n\n対端Cの対応する磁極部のθ成分がz軸方向にほぼ一定のθcで、中間部分(らせん状磁極部)Bの磁化困難方向がθaからθcに連続的に変化していることを特徴とするものである。また、前記AおよびBの磁極部のθ成分の絶対値|θc-θa|(ずらし角)がAおよびBの平均極間角度の5%以上50%以下である。\n\n【0014】\n\nコギングを小さくするためには、らせん状磁極部の軸方向長さが極異方性リング磁石全体の軸方向長さの1〜30%以下であることが望ましい。\n\n【0015】\n\n図2は本発明に用いる金型の断面模式図である(但し、成形体の側面の配向状態を示す)。磁粉を円筒状の金型1内に給粉後、上パンチ3と下パンチ4を所定の位置に配置する。その後磁粉の外周面に接する金型側面に周方向に周期的にN極とS極を発生させる。このN極とS極は軸方向に対して傾斜が実質的に0°である平行磁極部とらせん状磁極部がある。コイル2bは極間の中立線6a上部に巻き回されるように金型内に配置されている。極異方性配向された磁粉を上パンチ3および下パンチ4により軸方向に圧縮する事で成形工程が完了する。その際平行磁極部の互いの軸方向長さが一定となるように上パンチ3および下パンチ4の両方からパンチを押し込むように移動させる。その後の取り扱いを容易にするために圧縮した後で脱磁する。\n\n【0016】\n\n極異方性を付与する磁場中成形においては、磁極間の磁束は図3に示すようにキャビティ10内を円弧状に流れ、磁気異方性をもった粒子を円弧に沿って配列させる。極異方性リング磁石の成形では配向により磁化されやすい方向が決まっている。焼結後に着磁して表面磁束密度を周方向に測定すると、磁束密度の周期的なピークが観察される。中立線6aは磁極が切り替わる位置をつないだ線として定義できる。この線はマグネットビューワを用いて見る事ができる。また、着磁された微小磁石との吸引力測定、X線やカー効果を利用した観察により、焼結後の着磁前の状態であっても中立線を測定可能である。\n\n8極極異方性R-T-B系焼結リング磁石の中立線を測定し、θ-z座標に展開した結果を図4に示す。z軸に平行な2本の線分の端面がz軸に平行でない線分で連結されている。このような中立線は磁極数に等しい数存在する。屈曲点を通るθ軸に平行な2本の直線を引くことによりθの異なる3つの領域(A,B,C)に分ける事ができる。\n\nAの領域ではθm=θa+2πm÷n(nは磁極数、mは1からnまでの整数)\n\nCの領域ではθm=θc+2πm÷n(nは磁極数、mは1からnまでの整数)\n\nで表現できる。らせん状磁極部Bの領域は平行磁極部AとCの中間遷移状態である。\n\nθa、θcは生産上避けられないバラツキを含む事ができる。典型的なバラツキの値は極間角度の3%以内、さらには2%以内である。Bの領域では中立線がθaとθcをつなぐように連続的に変化する。金型製作上は磁極が曲るところで巻線の太さに応じた滑らかな変化でつなぐ事が望ましい。\n\nらせん状磁極部Bの軸方向の長さは全長の1%以上40%以下である事が望ましい。らせん状磁極部Bが1%未満では磁化方向の変化が急すぎて、焼結工程における極異方性リング磁石の磁化容易方向と磁化困難方向の収縮率の差、焼結及び熱処理後の冷却時に磁化容易方向と磁化困難方向の熱膨張係数の差によって熱応力が発生し、クラックが入りやすい。らせん状磁極部Bが40%を超えると、傾斜磁極の効果で配向を乱す割合が増えるために、コギングトルクがバラツキやすい。\n\nらせん状磁極部Bの軸方向長さHは以下のように簡易的に定義できる。マグネットビューワを使用して、平行磁極部における隣接する磁極の境界線(中立線)に対するらせん状磁極部Bにおける隣接する磁極の境界線(中立線)の傾斜角度αを求める。極異方性リング磁石の直径をD,磁極数をnとすると極幅wは、\n\nw=πD÷n\n\nで表され、Hは以下の式で表される。\n\nH=w÷tanα=πD÷n÷tanα\n\n上記の方法によりらせん状磁極部Bの軸方向長さを知る事ができる。\n\n両端の中立線の角度差(θc-θa)の絶対値を平均極間角度の5%以上50%以下に既定した理由は5%未満ではほとんどコギング低減効果がないためである。50%以上ではモータトルクが80%以下になり、実用に供し得ない。モータをゆっくり回転させたときのコギングトルクの波形はロータ磁極数nとステータ磁極数pの最小公倍数Mの山と同数の谷を有する事が多い。従って、望ましい中立線の角度差|θc-θa|≦2π/Mとなる。\n\n【0017】\n\n製品を着磁する時、弱い磁場を発生させる予備着磁と強い磁場を発生させる本着磁の2回に分ける事により、予備着磁でエネルギー的に安定な方向に極異方性リング磁石を回転させ、本着磁で十分に着磁する事が可能である。位置あわせマークをもとに着磁ヨークにセットするか、極異方性リング磁石を組込んで自発的に磁化容易方向に配置する着磁ヨークを使用すれば予備着磁を省略しても問題ない。\n\n【0018】\n\n次に本発明の極異方性リング磁石の構成と数値の限定理由を説明する。以下単に%と記してあるのはmass%を意味するものとする。\n\n本発明の極異方性リング磁石は、例えばR2T14B金属間化合物(RはYを含む希土類元素の少なくとも1種であり、TはFe又はFe及びCoである)を主相とする焼結磁石である。主要成分のR、T及びBの総計を100%として、R:27〜34%、B:0.5〜2%、残部T(TはFe又はFe及びCoである)からなる組成が選択される。\n\n前記極異方性リング磁石の質量を100%としたとき、不可避的不純物として0.6%以下、好ましくは0.3%以下、より好ましくは0.2%未満の酸素、0.3%以下、好ましくは0.1%以下の炭素、0.08%以下の窒素、0.02%以下の水素、0.2%以下、好ましくは0.05%以下、より好ましくは0.02%以下のCaの含有が許容される。\n\nRとして(Nd、Dy)、(Pr、Dy)、又は(Nd、Pr、Dy)の組合せが実用性が高い。又R量は27〜34%が好ましい。Dyの一部をTbで置換しても良い。R量が27%未満では固有保磁力iHcの低下が顕著になり、34%超では残留磁束密度Br、最大エネルギー積(BH)maxが大きく低下する。\n\nB量は0.5〜2%が好ましく、0.8〜1.2%がより好ましい。B量が0.5%未満では実用に耐えるiHcを得られず、2%超ではBr、(BH)maxが大きく低下する。Bの一部がCで置換可能な事は公知であり、本発明にも適用可能である。\n\n表面磁束密度や耐食性を向上するために、Nb,Al,Co,Ga及びCuの群から選択される少なくとも1種の元素を適量含有することが好ましい。\n\nNbの含有量は0.1〜2%が好ましい。Nbの含有により焼結過程でNbのほう化物が生成し、結晶粒の異常粒成長が抑制できる。Nb含有量が0.1%未満では添加効果が認められず、2%超ではNbのほう化物の生成量が多くなりBrの低下が顕著になる。\n\nAlの含有量は0.02〜2%が好ましい。Al含有量が0.02%未満ではiHcや耐食性の向上効果を得られず、2%超ではBr、(BH)maxが顕著に低下する。\n\nCo含有量は0.3〜5%が好ましい。Co含有量が0.3%未満ではキュリー点や耐食性を向上する効果が得られず、5%超ではBr、iHcが共に大きく低下する。\n\nGa含有量は0.01〜0.5%が好ましい。Ga含有量が0.01%未満ではiHcの向上効果を得られず、0.5%超ではBr、(BH)maxの低下が顕著になる。\n\nCu含有量は0.01〜1%が好ましい。Cu含有量が0.01%未満では耐食性やiHcを向上する効果を得られず、1%超ではBrの低下が顕著になる。\n\nCu及びCoが前記特定量範囲で共に含有されるとき、第2次熱処理の許容温度幅が広がる効果を得られ好ましい。\n\n本発明の極異方性リング磁石がR2T14B金属間化合物(RはYを含む希土類元素の少なくとも1種であり、TはFe又はFe及びCoである)を主相とする異方性磁粉を結合剤で結合したボンデッド磁石である場合、平均結晶粒径0.01〜0.5μmであり、熱間加工やHDDR等の方法で異方性を付与した磁粉を用いる事が望ましい。結合材とし\n\nては公知の材料である、ゴム、ナイロン、エポキシ、PPS他のプラスチック材料または亜鉛や低融点合金を用いる事ができる。\n\n本発明の極異方性リング磁石がR-T-N金属間化合物(RはYを含む希土類元素の少なくとも1種であり、TはFe又はFe及びCoである)を主相とする異方性磁粉を結合剤で結合したボンデッド磁石である場合、Sm-Fe-Nで知られる金属間化合物であり、平均1から10μmに粉砕された異方性微粉を用いる事が望ましい。磁気特性を大幅に悪化させない添加物および不可避不純物は許容される。結合材としては公知の材料である、ゴム、ナイロン、エポキシ、PPS他のプラスチック材料または亜鉛や低融点合金を用いる事ができる。\n\n【0019】\n\n本発明の極異方性リング磁石を公知のフェライト磁石で作製すればコストパフォーマンス上好ましい。\n\n特に(A1-xR’x)O·n[(Fe1-yMy)2O3](原子比率)\n\n(但し、AはSr及び/又はBaであり、R’はYを含む希土類元素の少なくとも1種でありLaを必ず含み、MはCo又はCo及びZnであり、x,y及びnはそれぞれ下記条件:\n\n5.0≦n≦6.4\n\n0.01≦x≦0.4,及び\n\n0.005≦y≦0.04\n\nを満たす数字である。)により表される主要成分組成を有し、マグネトプランバイト型結晶構造を有する高性能フェライト磁石からなる極異方性焼結リング磁石を用いた場合に回転機性能を高められるので好ましい。\n\n飽和磁化を高めるために、R’に占めるLaの比率を、好ましくは50原子%以上、より好ましくは70原子%以上、特に好ましくは99原子%以上とするのがよい。理想的には不可避的R’成分を除いてR’がLaからなるのがよい。従って、R’元素供給原料として、Laを50原子%以上含み、残部がPr、Nd及びCeの少なくとも1種並びに不可避的R’成分からなる安価なミッシュメタルの酸化物を用いるのが実用的である。その場合のR’はLaとNd、Pr及びCeの少なくとも1種と不可避的R’成分とで構成される。\n\nモル比nは5.0〜6.4とする必要があり、5.5〜6.3がより好ましく、5.7〜6.2が特に好ましい。nが6.4超ではマグネトプランバイト相以外の異相(α-Fe2O3等)の存在によりiHcが大きく低下し、nが5.0未満ではBrが大きく低下する。\n\nxは0.01〜0.4が好ましく、0.1〜0.3がより好ましく、0.15〜0.25が特に好ましい。xが0.01未満では添加効果が認められず、0.4超では表面磁束密度が大きく低下する。\n\nyとxとの間には、電荷補償のために理想的にはy=x/(2.0n)の関係が成立する必要があるが、yがx/(2.6n)以上、x/(1.6n)以下であれば高いBr及び高い減磁曲線の角形を具備するフェライト磁石を得られる。なお、yがx/(2.0n)からずれた場合、Fe2+を含む場合があるが、何ら支障はない。典型的な例では、yの好ましい範囲は0.04以下であり、特に0.005〜0.03である。又、5.7≦n≦6.2,0.2≦x≦0.3及び1.02及びCaO(CaCO3)を所定量含有することが実用上重要である。\n\nSiO2は焼結時の結晶粒成長を抑制する添加物であり、前記フェライト磁石の総massを100%としてSiO2含有量を0.05〜0.55%にすることが好ましく、0.25〜0.55%がより好ましい。SiO2含有量が0.05%未満では焼結時に結晶粒成長が過度に進行し保磁力が大きく低下し、0.55%超では結晶粒成長が過度に抑制\n\nされ結晶粒成長による配向度の改善が不十分となりBrが大きく低下する。\n\nCaOは結晶粒成長を促進する添加物であり、前記フェライト磁石の総massを100mass%としてCaO含有量は0.35〜1.5%が好ましく、0.4〜1.5%がより好ましく、0.5〜1.5%が特に好ましい。CaO含有量が1.5%超では焼結時に結晶粒成長が過度に進行し、保磁力が大きく低下し、0.35%未満では結晶粒成長が過度に抑制され、結晶粒成長による配向度の改善が不十分となりBrが大きく低下する。\n\n本発明が公知のフェライトを主相とする異方性磁粉を結合剤で結合したボンデッド磁石である場合、コストパフォーマンス上好ましい。\n\n【0020】\n\n本発明の極異方性焼結リング磁石の成形は例えば図3の成形金型1(対称8極極異方性配向用)を備えたプレス機により行う。図3中、実線は図2(b)でのA-A断面、破線はB-B断面でのコイル位置である。成形金型1において、7は強磁性体からなるダイスであり、8はダイス7の環状空間内に同心状に配置された非磁性体からなる円形断面を有するコアである。ダイス7の円筒状内面には複数の溝12が形成されており、各溝12中に磁場発生用コイル2bが埋設されている。磁場発生用コイル2bは途中にらせん状磁極部を作るための屈曲部を有している。ダイス7の内周面上には溝12を覆うようにしてコア8と相似形の円形断面を有する非磁性体製のスペーサ9が設けてある。スペーサ9とコア8との間がキャビティ10である。各コイル2bに電流が通電されるとキャビティ10に矢印で示される磁束が生じスペーサ9のコーナー部にN,S,N,S··という交互の極性の磁極が形成される。\n\n次に図3の成形金型1により本発明の極異方性焼結リング磁石用成形体を成形する方法の一例を説明する。まず図2の上パンチ3を引き上げた状態で振動フィーダ等の供給手段により、キャビティ内に所定量の原料粉末又はスラリーを充填する。次いでコイル2bにパルス電流を通電し、焼結磁石用微粉末又はスラリーを配向させた状態としそのまま上パンチ3を下降させ、らせん状磁極部を中心に下パンチ4と対称となる位置まで下降させる。その後は下パンチ4と上パンチ3を同様のスピード、加圧力でキャビティ方向に加圧し、極異方性リング磁石の成形体を得る。また、上パンチ3の加圧の際、ダイスを上パンチ3の半分のスピードで下降させることで上記と同様に軸方向に左右対称な長さの平行磁極部を得る事が可能である。\n\n印加する極異方性配向磁場強度は極力高くするのが好ましいが通常0.4〜2.0MA/m(5〜25kOe)とされる。配向磁場強度が0.4MA/m未満では配向が不十分になり、工業生産上2.0MA/m超の高い配向磁場強度を確保するのは困難である。亀裂を抑制し、所定の配向度を得るために圧縮成形の圧力はR-T-B系焼結磁石用成形体の場合49〜392MPa(500〜4000kg/cm2)とし、フェライト磁石用成形体の場合29〜39MPa(300〜400kg/cm2)とするのが好ましい。\n\n【0021】\n\n成形機がサーボモータを使用したサーボプレスである場合や、カムを使用したメカプレスである場合、もしくは数値制御された油圧シリンダを有する油圧プレスである場合、下パンチを上パンチの移動に対して逆方向に動かす、またはダイスを上パンチの移動に対して同方向に動かす事により、金型内の原料が上下方向に移動しない場所(以下ニュートラルラインと呼ぶ)を設定する事ができる。\n\n本発明者は金型のらせん状配向部の中央と前記ニュートラルラインを一致させる制御を行う事により、らせん状配向部を成形する金型の位置で原料の上下移動を最小化できる事を考案し、実験を行うことによって有効性を確認した。\n\n【0022】\n\nさらに焼結磁石やボンド磁石の製造においてはアンダーフィル作動を組み合わせる事によりらせん状磁極部で隔てられた平行磁極部A,Cとらせん状磁極部Bの軸方向長さを変更できることも見出した。アンダーフィル作動とは原料をキャビティ内に充填した後、上パンチで加圧する前にダイスと下パンチの相対位置を動かして原料粉を金型内部に送り込む手法である。アンダーフィルによって軸方向長さが異なる中間位置Bを極異方性リング磁石の中央でない位置にもってくる事ができる。この事は同一金型を用いて総トルク重視かコギングトルク重視の調整が可能である事を意味する。\n\nまた、アンダーフィルの利用により同一のずらし角を有する軸方向の寸法が異なる極異方性リング磁石を作製可能である。\n\n【0023】\n\nR-T-B系焼結磁石用成形体の場合は成形体密度:3.7〜4.6Mg/m3程度であり、フェライト焼結磁石用成形体の場合は成形体密度:2.6〜3.2Mg/m3程度に調整される。R-T-Bボンデッド磁石やR-T-Nボンデッド磁石の場合は、圧縮成形では5.5〜6.5Mg/m3程度に、射出成形では4.0〜5.7Mg/m3程度に調整される。フェライトボンデッド磁石の射出成形では2.6〜3.6Mg/m3程度に調整される。\n\n次に得られた本圧縮成形体を加圧した状態のまま磁場発生用コイルに上記と逆方向のパルス電流を通電して脱磁する。ボンデッド磁石では磁粉付着が耐食性やコンタミネーション等の信頼性に影響するため脱磁と除粉が重要である。\n\n【0024】\n\n本発明の極異方性焼結リング磁石の寸法は特に限定されないが、軸方向長さ(L)及び外径寸法(Do)がそれぞれ、L=5〜100mm、好ましくはL=8〜50mmでありかつDo=3〜200mm、好ましくはDo=7〜50mmのものの実用性が高い。Do200mmの極異方性焼結リング磁石は小型化のニーズに適合しない。又L従来の1段成形品との有意差がなく、L>100mmのものは小型化のニーズに適合しない。\n\n本発明の極異方性焼結リング磁石の磁極数は特に限定されないが、外径面又は内径面の周方向に等間隔又は異なる間隔で4〜100極、好ましくは4〜24極形成するのが実用性が高い。コギングトルクのバラツキは2.5%以内とすることが可能である。\n\n【0025】\n\n【実施例】\n\n以下、実施例により本発明を詳細に説明するが、それらの実施例により本発明が限定されるものではない。\n\n(実施例1)\n\nNd:30.5mass%、Dy:1.5mass%、Ga:0.1mass%、B:1.0mass%、Fe:64.8mass%の主要成分組成を有する合金粗粉を不活性ガス雰囲気中でジェットミル微粉砕し、平均粒径4.5μm(F.S.S.S.)の焼結磁石用微粉を得た。この焼結磁石用微粉のかさ密度を測定したところ1.7Mg/m3であった。次に、図1に示すらせん状の磁極部配向が可能な図2の成形金型を用い、上ラムとダイスの動きを数値制御できるサーボプレスにより、まず上パンチを引き上げた状態でキャビティ内に所定量の前記微粉末を充填した。金型は8極極異方性型でずらし角11°である。充填された原料の中央が金型屈曲部に一致するようにアンダーフィル作動を行った。キャビティに磁極あたり5.0kAターンのパルス電流で極異方性磁場を間欠的に3回印加した状態としながら上パンチを下降させた。このときダイスを上パンチの半分の速度で下降させながら、圧縮成形を行い、下パンチを実質的にキャビティ方向へ加圧した状態とした。その後脱磁し、得られた本成形体の密度は4.2Mg/m3であった。\n\n次に、本成形体を約0.07Pa(5×10-4Torr)の真空中、1100℃で2時間焼結し、室温まで冷却した。次にAr雰囲気中で550℃×2時間の第2次熱処理を行い室温まで冷却した。次に、端面及び外周面を加工(内径面は無加工)し、電着により熱硬化性樹脂(エポキシ樹脂)をコーティングし、外径14mm、内径9mm、軸方向長さ15mmの対称8極極異方性リング磁石を得た。次に極異方性付与方向に沿って総磁束量が飽和する条件で着磁し、周方向に表面磁束密度を測定した。\n\n測定場所は軸方向端面から2.5mmステップで5箇所測定した。上の2箇所と下の2箇所のずらし角11°に対応するデータを得た。波形形状を図5に示す。図4における平行磁極部(A)では2箇所とも同様なほぼ正弦波の波形形状が、下の平行磁極部(C)で\n\nは(A)の波形形状と比較して11°異相した以外は実質的に同等な波形形状が得られた。また、らせん状磁極部Bのデータは両者の中間であった。またらせん状磁極部Bの軸方向長さは3.0mmで、極異方性リング磁石全体の軸方向長さの20%であった。この極異方性リング磁石のコギングトルクのバラツキを測定したところ、2%と非常に小さい値であった。コギングトルクのバラツキの測定は、極異方性リング磁石をロータコアと組み付け、そのロータに対応するステータに入れた後に1回転させた時の各コギング毎のトルクのバラツキを計り、それを試料数20個のサンプルで行い平均値を取ったものである。\n\n又、図1に示すように得られた対称8極極異方性リング磁石を図6に示すようにシャフト上に固定し、ロータ5を構成し、所定の回転機に組み込んだところ有用な回転機性能が得られた。\n\n【0026】\n\n(比較例1)\n\n前記らせん状磁極部の軸方向長さを殆ど取らずに検討を行った。外見上、複数の極異方性リング磁石をずらし角11°で固着させたように製造し、(らせん状磁極部の軸方向長さ約0.1mm)の極異方性リング磁石の成形体を得た。前記成形体を1100℃にて2時間焼結したところ、このらせん状磁極部からひびが入り焼結割れを起してしまい使用に耐えなかった。\n\n【0027】\n\n(比較例2)\n\n前記らせん状磁極部の軸方向長さを各々の平行磁極部の軸方向長さよりも長くして検討を行った。平行磁極部の軸方向長さを互いに4mmづつ、らせん状磁極部の軸方向長さを7mmとした。それ以外は実施例1と同様にして極異方性リング磁石を製造した。この極異方性リング磁石(N=50)のコギングトルクのバラツキを測定したところ、約10%と大きい値であった。この極異方性リング磁石を実施例1と同様にしてシャフト上に固定し、ロータ5を構成し、所定の回転機に組み込むことは可能であるが、コギングトルクにバラツキがあると各回転機性能の差があるため、大量生産においては安定した製品化が目指せず顧客のニーズから外れてしまうことが解った。\n\n【0028】\n\n(実施例2)\n\nSrCO3粉末(不純物としてBa,Caを含む)及びα-Fe2O3粉末,La2O3粉末及びCo3O4粉末を用いて、仮焼後に(Sr0.80La0.20)O·5.95[(Fe0.983Co0.017)2O3]で示される主要成分組成になるように湿式混合後、1250℃で2時間、大気中で仮焼した。仮焼物をローラーミルで乾式粗粉砕し粗粉を得た。次いで、アトライタにより湿式微粉砕し、平均粒径0.8μm(F.S.S.S.)の微粉砕粉を得、これを公知の手段で造粒した。微粉砕初期に、微粉砕に投入した粗粉に対するmass比でLa2O3粉末のみを0.6mass%添加した。又微粉砕初期に焼結助剤としてSrCO3粉末,CaCO3粉末及びSiO2粉末を微粉砕に投入した粗粉に対するmass比でそれぞれ0.1mass%,1.0mass%及び0.3mass%添加した。\n\nこのフェライト磁石用原料のかさ密度を測定したところ1.4Mg/m3であった。次に、図2の成形金型を備え、上ラムとダイスの動きを数値制御できるサーボプレスにより、まず上パンチを引き上げた状態でキャビティ内に所定量の前記微粉末を充填した。金型は8極極異方性型でずらし角11°である。充填された原料の中央が金型屈曲部に一致するようにアンダーフィル作動を行った。キャビティに0.4MA/m(5kOe)のパルス電流で極異方性磁場を間欠的に3回印加した状態としながら上パンチを下降させた。このときダイスを上パンチの半分の速度で下降させながら、成形圧力:44MPa(450kg/cm2)で圧縮成形を行い、下パンチを実質的にキャビティ方向へ加圧した状態とした。その後脱磁し、得られた本成形体の密度は3.2Mg/m3であった。次いで1200℃で2時間焼結し、下記の主要成分組成(La過剰組成:La/Co=1.2)を有する焼結体を得た。\n\n(Sr0.76La0.24)O·5.72[(Fe0.983Co0.017)2O3]\n\n次に焼結体の端面及び外周面を加工(内径面は無加工)し、外径20mm、内径14mm、軸方向長さ30mmの対称8極極異方性リング磁石を得た。次に極異方性付与方向に沿って総磁束量が飽和する条件で着磁し、周方向に表面磁束密度を測定した。\n\n測定場所は軸方向端面から5.0mmステップで5箇所測定した。上の2箇所と下の2箇所はずらし角11°に対応するデータを得た。またらせん状磁極部Bの軸方向長さは8.0mmで、極異方性リング磁石全体の軸方向長さの約27%であった。この極異方性リング磁石(N=50)のコギングトルクのバラツキを測定したところ、2%と非常に小さい値であった。\n\n又、図1に示すように得られた対称8極極異方性リング磁石を図6に示すようにシャフト上に固定し、ロータ5を構成し、所定の回転機に組み込んだところ有用な回転機性能が得られた。\n\n【0029】\n\n(比較例3)\n\n前記らせん状磁極部の軸方向長さを短くして検討を行った。らせん状磁極部の軸方向長さが2.0mmの極異方性リング磁石の成形体を得た。前記成形体を1100℃にて2時間焼結したところ、このらせん状磁極部からひびが入り焼結割れを起してしまい使用に耐えなかった。\n\n【0030】\n\n(比較例4)\n\n前記らせん状磁極部の軸方向長さを各々の平行磁極部の軸方向長さよりも長くして検討を行った。平行磁極部の軸方向長さを互いに8mmづつ、らせん状磁極部の軸方向長さを22mmとした。それ以外は実施例1と同様にして極異方性リング磁石を製造した。この極異方性リング磁石(N=50)のコギングトルクのバラツキを測定したところ、9%と大きい値であった。この極異方性リング磁石を実施例1と同様にしてシャフト上に固定し、ロータ5を構成し、所定の回転機に組み込むことは可能であるが、コギングトルクにバラツキがあると各回転機性能の差があるため、大量生産においては安定した製品化が目指せず顧客のニーズから外れてしまうことが解った。\n\n【0031】\n\n(実施例3)\n\nNd:29.2mass%、Ga:0.8mass%、B:1.0mass%、Co:10.5mass%、残部Feの主要成分組成を有する合金を真空溶解し、ロール冷却を行って鋳造合金を得た。ロール冷却は銅製の単ロール法を用いており、板厚が300〜500μmになるように作製した。冷却速度は約5×102℃/secに相当する。この合金に均質化熱処理を施した後、室温で水素吸蔵させ、10℃/secの昇温速度で830℃まで加熱した。この温度で2時間保持した後に1時間脱水素処理を行った。脱水素処理の終了後、炉内をアルゴン雰囲気に置換して冷却した。これにより得られた合金を32〜106μmに分級した。この合金粗粉とエポキシ樹脂を混合し原料とした。\n\n次に、図1に示すらせん状の磁極部配向が可能な図2に記載の成形金型を用い、上ラムとダイスの動きを数値制御できるサーボプレスにより、まず上パンチを引き上げた状態でキャビティ内に所定量の前記原料を充填した。金型は8極極異方性型でずらし角3°とした。充填された原料の中央が金型屈曲部に一致するようにアンダーフィル作動を行った。キャビティに磁極あたり5.0kAターンのパルス電流で極異方性磁場を間欠的に3回印加した状態としながら上パンチを下降させた。\n\n得られた成形体を熱処理して樹脂を硬化させて極異方性ボンデッドリング磁石を得た。電着により熱硬化性樹脂(エポキシ樹脂)をコーティングし、図1に示すような外径14mm、内径10mm、軸方向長さ15mmの対称8極極異方性リング磁石を得た。次に極異方性付与方向に沿って総磁束量が飽和する条件で着磁し、周方向に表面磁束密度を測定した。\n\n測定場所は軸方向端面から2.5mmステップで5箇所測定した。図1において上の平行磁極部(A)2箇所では同様なほぼ正弦波の波形形状が、平行磁極部(C)では(A)の波形形状と比較して11°異相した波形形状が得られた。この極異方性リング磁石(N=50)のコギングトルクのバラツキを測定したところ、1.7%と非常に小さい値であった。\n\n【0032】\n\n(参考例1)\n\n実施例3と同様の原料を用いて極異方性ボンデッドリング磁石を製造した。\n\n図8に示す磁極部配向が可能な図7に記載の成形金型を用いて成形を行った。上ラムとダイスの動きを数値制御できるサーボプレスにより、まず上パンチを引き上げた状態でキャビティ内に所定量の前記原料を充填した。金型は16極極異方性型でずらし角3°とした。充填された原料の中央が金型屈曲部に一致するようにアンダーフィル作動を行った。キャビティに磁極あたり4.0kAターンのパルス電流で極異方性磁場を間欠的に3回印加した状態としながら上パンチを下降させた。得られた本成形体を熱処理して樹脂を硬化させて極異方性ボンデッドリング磁石を得た。電着により熱硬化性樹脂(エポキシ樹脂)をコーティングし、図8に示すような外径14mm、内径8mm、軸方向長さ20mmの対称16極極異方性リング磁石を得た。次に極異方性付与方向に沿って総磁束量が飽和する条件で着磁し、周方向に表面磁束密度を測定した。\n\n測定場所は軸方向端面から4.0mmステップで4箇所測定した。図8に平行磁極部(A)と平行磁極部(C)では3°異相した波形形状が得られ、波形は実質的に同じものであった。この極異方性ボンデッドリング磁石(N=50)のコギングトルクのバラツキを測定したところ、2.2%と非常に小さい値であった。\n\n【0033】\n\n【発明の効果】\n\n以上記述の通り本発明によれば、磁極の間隔のバラツキが少なく、もってコギングトルクのバラツキが小さく、多段成形せずに得られる極異方性リング磁石および成形金型を提供することができた。\n\n【図面の簡単な説明】\n\n【図1】  本発明の極異方性リング磁石の外観を示す模式図である。\n\n【図2】  本発明の極異方性リング磁石の成形に用いる金型構造の一例を示す図である。\n\n【図3】  図2の金型構造の軸断面を示す図である。\n\n【図4】  図1の極異方性リング磁石の側面の展開図である。\n\n【図5】  図1の極異方性リング磁石の表面磁束波形である。\n\n【図6】  本発明の実施例の極異方性リング磁石を用いたロータである。\n\n【図7】参考例の極異方性リング磁石の成形に用いる金型構造の一例を示す図である。\n\n【図8】参考例の極異方性リング磁石の外観を示す模式図である。\n\n【図9】  従来の極異方性リング磁石の成形に用いる金型構造を示す図である。\n\n【符号の説明】\n\n1金型、2b,2c,2dコイル、3  上パンチ、4  下パンチ、\n\n5ロータ、5a  成形材料、6a中立線、6b  中立線、\n\n7  ダイス、8  コア、9  スペーサ、10キャビティ、12  溝', '【0001】\n\n技术领域\n\n本发明需要多级成型不是多体戒指磁铁和模塑模具它涉及。\n\n【0002】\n\n发明背景\n\n大量的径向各向异性环磁铁和杆消毒环磁铁通常用于旋转机器,例如伺服电机。使用杆不批准环磁体时相同的尺寸径向各向异性与环磁体相比,可以获得高表面磁通密度,并且可以提供小型和更高的性能电动机。例如,杆是杆子戒指有一个磁铁的描述。\n\n在使用永磁体的电动机中,由于定子和转子之间的磁阻根据旋转角度而改变而发生齿槽。尤其极性环如果磁极的数量小于4到8个管道,则齿槽扭矩变得显着。由于该齿槽扭矩与磁通密度的正方形成比例,因此必须在间隙部分的圆周方向上平滑磁通波形,以减小齿槽扭矩。当使用径向各向异性环磁体时,通常通过在磁化期间制造偏斜磁化来执行抑制齿槽的方法。\n\n但是,具有高表面磁通密度径向的径向环磁体各向异性与环形磁体不同,磁化方向由成形时取向确定。因为在压缩成型的同时进行方向,所以易于使用模制物体的磁极之间的变化,并且不能进行磁化的调整。因此,需要措施抑制齿槽。\n\n例如,在日本专利公开号8-28293中磁极P是4至8极消毒环磁铁,每个磁极部分倾斜或轴大于5°以上极性环磁铁但描述是。但是,这是这样的极性环当实际制造磁体时,由于磁极部分相对于轴线倾斜,当磁粉在定向在模具中的磁粉时取向时,当它在初始阶段定向时磁极部分形状被压缩。变形存在偏向通过与磁极的磁力吸力部分地扰乱部分取向的问题。另外,存在缺点:由于烧结时的收缩速率,磁极与偏斜角之间的间隔难以使电动机恒定的齿槽扭矩。\n\n多种极性作为这种措施戒指用于磁铁来示出磁极沿轴向偏移和堆叠的示例。二世令助给8-340652.出版物在轴向上的多个偏振环磁体的情况下,磁极移位,磁极偏移,并且描述了倾斜磁性伺服电动机,但齿槽扭矩减小。没有提到换档角度控制, 每个极性环确保磁铁需要时间和精力。多体戒指磁铁的制造成本便宜,但分别需要将成本组装到转子。\n\n此外,日本专利公开号11-8960在通过使用具有磁极换档夹具的磁极移位夹具来控制磁场生成单元的磁中心,该磁极换档夹具将齿轮扭矩转移到反向相位以控制换档角度。在这种方法中,当从夹具中提取时极性环需要采取诸如粘合的固定装置,使得磁铁不旋转,并且生产率差。\n\n【0003】\n\n本发明要解决的问题\n\n因此,本发明的主题是、磁极的几乎没有间距变化那齿轮扭矩芭蕾舞小,没有多级成型在获得杆不批准环磁铁和模塑模具提供。\n\n【0004】\n\n[解决问题的手段]\n\n本发明的极不批准环磁体是由一个平台形成的极性反射环磁体,环磁体沿轴向具有多个磁极,并且对于轴向端部的环形磁体的每个磁极。轴向平行的极部分并相对于平行磁极部分之间的轴向进一步倾斜,并且螺旋极部分是短于平行磁极部分的轴向长度的轴向长度。\n\n在本发明的极离散环磁体中,并联磁极部分中的相邻磁极(中性线)的边界(中性线)相对于相邻磁极部分的边界线(中性线)倾斜在螺旋杆部分。角度α为85°或更小。\n\n无论是多级成型是否有交界处本发明的极管环磁体轴向沿着可以通过测量表面磁通密度来确定。简而言之一阶段如果模塑,磁粉的供应密度几乎均匀,因此烧结极性各向异性密度在环形磁体的筒部分中不会改变。通过一切手段极性各向异性环磁体尽管末端的表面磁通密度下降,但表面磁通密度在桶中不含5%或更多的磁性磁通密度。当空腔中的磁粉通过冲头冲压形成时,密度差在由冲头推动的部分中略微变化,并且所提供磁粉的部分,并且表面磁通密度在桶中部分。超过5%超过8%。因此,通过测量该表面磁通密度,它可以是多级模制品。一阶段可以确定模塑之间的差异。\n\n【0005】\n\n本发明的成型模具是形成光环磁铁的单级模具的模具,\n\n具有中空部分的管芯穿过轴向方向上,并且形成在面向中空部分的模具的内周表面上的多个凹槽,以及用于植入凹槽中的磁场的线圈,并且模具的内周芯设置成覆盖表面和凹槽和设置在管芯的中空部分中的芯并沿着模具的轴向延伸,以及间隔物和芯。有腔,\n\n对于磁场生成线圈的每个线圈,在模制线圈时产生的热磁石导向磁通对应于在模制时产生的磁极导电取向磁通量的磁通,以及上述一个线圈。沿轴向绕组部分管芯的方向在平行于模具的轴向方向的轴向方向上倾斜,以及相对于在平行绕组部分之间形成的模具的轴向倾斜的绕组部分。它的特征在于。\n\n在本发明的成型模具中,倾斜绕组部分的轴向长度的特征在于,它短于平行绕组部分的轴向长度。\n\n【0006】\n\n发明内容\n\n这里,将参考图1和图2详细描述本发明的优点。1,2和7。图2和7,符号1是模具,2B,2C,2D是用于获得定向磁场的线圈,3是上冲头,4是较低的冲头。由上冲头3,下冲头4和模具1包围的腔10成型材料5.一种它充满了。同样在图中符号图6是在模塑时取向的磁极和磁极边界与显示中立线这是。当获得螺旋定向的极性各向异性环磁体时,当磁极部分几乎相对于轴线均匀地倾斜时,如现有技术中所示,如图7所示,起始阶段(图7(图7中) )),模塑材料5a沿着定向磁场对齐,但是在模制材料5a被上冲头3和下冲头4压缩之后的后模级步骤(图7(b))和第一个以不同角度定向磁场中性线6a由于磁极之间的距离也易于使用,因为这种应变也很容易使用。即使在模制材料被压缩到最终模塑产品形状之后,即使施加定向的磁场,模塑材料也不定向定向。相反,如果通过模制压缩的磁极部分的应变被放置在计算和压缩成型中,则必须严格控制模塑材料中包含的模塑材料的量,这对于工业生产实际上是困难的。\n\n【0007】\n\n如图1所示。如图1(在本发明的极离散环磁体中示意性地示出),轴线方向线圈与磁极部分平行于极部分(下文中称为平行极部分)A和C.2b在模具中提供。结果,如图2所示。如图2所示,即使通过压缩成型压制成型材料,磁极部分A和C处的中性线的宽度和方向也仅仅基本上不太可能提高密度。与现有技术相比,螺旋定向磁极部分略微,并且可以制造磁极变化的极性环形磁体。\n\n【0008】\n\n当相互平行的磁极部分彼此连接而不打开距离时,可能发生由于烧结时的收缩率引起的裂缝。为了抑制这一点,优选提供螺旋定向磁极部分的宽度。当然,如果布置磁极部分,则可以通过烧结时的收缩速率进一步降低平行磁极部分和螺旋极部分。此时的对准线圈可以缠绕到模具中,以便与图1中所示的中性线6a重叠。\n\n【0009】\n\n如图1所示的磁极的位置和反转位置(中性线)如图1所示。通过上述制造方法两端的轴向方向平行和获得杆不批准环磁体在圆周方向上倾斜。模制时,腔体不会将磁粉在螺旋定向位置移动到模具上。里面通过压缩成型按压磁粉的磁粉,距离两端相同的距离,具有非常小的取向的恒定位移角度。1级成型极度戒指磁铁模压体可以获得。\n\n【0010】\n\n图1中中间部分B的轴向。长度由于磁极之间的变化易于使用,因此较短的是优选的,但是它不是太短,并且由于烧结时由于收缩而导致裂缝变得不可能。 It is necessary to appropriately select by molding material, orientation.例如,R-T-B系统(R是含有Y)极离散环的稀土元素中的至少一个在磁铁中,相邻磁极边界(中性线)的斜率在平行杆部分中相邻磁极(中性线)的螺旋杆部分角度α优选为85°或更小。优选的倾斜角度为80°或更小,更优选为70°或更小。轴向方向长度优选地,它为0.3mm以上。\n\n此外,在易于烧结的烧结炉的铁氧体磁体中,倾斜角α优选为60度或更小。优选的倾斜角度为55°或更小,更优选为45°或更小。轴向方向长度优选地,它为0.5mm以上。\n\n与多级成型相比,一个模塑机的单位时间的模制件的数量大大提高,并且磁极部分的变化可以抑制多级模制产品。\n\n【0011】\n\n然而,保税模塑后,如果它是磁铁养护即使进行该过程,也改善了由于收缩率引起的破裂。因此,中性线如图8所示6b可以获得极性各向异性环磁体。另外,还可以降低定向的磁场并抑制收缩裂缝。这可以获得齿槽扭矩的小极性各向异性环磁铁。\n\n【0012】\n\n发明极点不赞成戒指磁铁例如,通过以下步骤制造。\n\n(1)烧结磁铁:原料粉制造 - 饲料 -在极性磁场中的成型- 添加(加热处理,加工,表面处理)\n\n(2)粘结磁铁\n\n(压缩成型):原料复合制造送料 -在极性磁场中的成型-Cure(加工,另外的表面处理)\n\n(注塑):成分复合制造 -在极性磁场期间注射成型- 加上(加工,表面处理)\n\n【0013】\n\n几何上由本发明的极感环磁体表示。图1显示像极度环形磁铁的中心轴与R-θ-Z圆柱坐标系的z轴匹配,极性环磁铁的一端触点z = 0平面,极度当环磁体实际上3分成z轴并且从z轴越小的z轴命名为a,b和c时,a的磁极部分的θ分量在z轴方向上几乎恒定,并且\n\n其特征在于在θc的z轴方向上连续地将中间部分(螺旋磁极部分)b的磁化方向连续地改变为θa的z轴方向的相应磁极部分的θ分量的z轴方向。对面的结束C.它是此外,上述B和B的磁极部分的θ分量的绝对值|θc-θa(换体角)为a和b的平均极性角度的5%或更高,50%或更少。\n\n【0014】\n\n为了减少齿槽,螺旋杆的轴向方向长度但整个极杆离散环磁铁的轴向长度希望小于或等于30%中兴。\n\n【0015】\n\n图。图2是本发明中使用的模具的示意性剖视图(然而,成型表示侧面的方向状态)。在将磁粉投入到圆柱形模具1中之后,上冲头3和下冲头4设置在预定位置。此后,在与磁粉的外周表面接触的侧表面上周期性地产生n杆和S杆。 n杆和S杆具有平行磁极部分和螺旋极部分,轴向具有大致0°的斜率。线圈2b是杆之间的中性线6a它布置在模具中缠绕在顶部。极度对准的磁粉通过上冲头3和下冲头4轴向轴向轴向轴向轴向压缩通过做完成成形过程。那时,彼此的平行杆部分轴向方向不断长度什么时候冲头3和下冲头4来自两者推拳迁移。促进他们的处理压缩之后馏出物。\n\n【0016】\n\n极度磁场形成给予在磁极之间的磁通量中,如图2所示。腔10.流向弧形、磁性各向异性的颗粒的沿弧形阵列制作。极度戒指磁铁成型因此,通过方向易于磁化的方向有。烧结后磁化做当周向测量表面磁通密度时,观察到磁通密度的周期性峰值。中立线6a可以定义为具有切换磁极的位置的线。这条线使用磁铁查看器看可以办到。另外,通过测量吸力与磁化微磁体,使用X射线和汽车效果观察,烧结后即使在磁化状态下,也可以测量中性线。\n\n8杆非常各向异性R-T-B系统烧结戒指磁体的中性线和在θ-Z坐标中开发的中性线的后果如图2所示。平行于Z轴的两个线段的端面不平行于Z轴线段它通过了。这种中立线磁性有相同的数字等于极数。通过弯曲点拉动与θ轴平行的两条直线拉动三个不同的θ的区域(a,b,c)它可以分为。\n\n在A,θm=θa+2πm÷n的区域中(n是磁性杆的数量,m1从n的整数\n\n在区域C中,θm=θc+2πm÷n(n是磁性杆的数量,m1从n的整数\n\n可以表达。螺旋极部分B的区域是平行磁极部分A和C的中间转换状态。\n\nθa,θc无法避免aravious可以包括在内。典型的aravious极角的值在3%范围内,超过2%。在区域B中,中性线连续变化,使得θa和θc是连接的。期望根据磁极弯曲时根据绕组的厚度与平滑的变化连接。\n\n期望螺旋极部分B的轴向长度为总长度为1%或更高,40%或更少。如果螺旋杆部分B小于1%,则磁化方向的变化太冲动,烧结过程中的多根圈磁铁磁化方便方向和磁化难度方向的收缩率,烧结差异也热处理后部在冷却磁化设施和磁化系数时,由于热膨胀系数的差异而产生热应力,并且容易缠绕裂缝。如果螺旋极部分B超过40%,则齿槽扭矩是aravious便宜的。\n\n罗拉洛杆B.轴向方向长度H可以简单地定义如下。磁铁观众使用,对于平行杆部件的相邻磁极的边界线(中性线)疝气杆B.相邻磁极边框中立线)的倾斜斜角找到α。极性环磁铁直径D,磁性假设极点是n,最大w是\n\nw =Πd÷n\n\nH由以下等式表示:H.\n\nH =W÷TANα=Πd÷n÷tanα\n\n根据上述方法轴向方向你可以知道长度。\n\n两端中性线角差(θc-θa)的绝对值的平均极直角的预定5%或更多和50%或更低的原因小于5%,并且几乎没有齿槽还原效果。超过50%发动机扭矩为80%或更少,不能用于实际使用。慢慢旋转电机时齿轮扭矩波形磁性n个和定子磁性通常有许多山谷作为最低宣传M的最小数量因此,角差|θc-θa|≤2π/ m所需的中性线。\n\n【0017】\n\n当磁化产品时,可以产生弱磁场并在初步磁性中产生两次强磁场,并以能量稳定的方向产生极性环可以完全旋转磁体并充分磁化磁体。根据对准标记设置磁化轭,极性环如果磁化磁轭沿磁体内置和自愿以磁化的方向设置的方向设置,则没有省略任何问题。\n\n【0018】\n\n下一个极度描述环磁体的配置和数值的局限性。下面,假设质量%称为%。\n\n本发明的极离散环磁体例如是r2T.14B内矿化合物(R是含有Y的稀土元素中的至少一种,T是Fe或Fe和Co)烧结磁体。这是。主要组分的100%R,T和B选择为100%,R:27至34%,B:0.5〜2%,剩余部分T(T为FE或FE和CO)选择。\n\n极性各向异性当环磁体的质量为100%,0.6%或更低,优选0.3%或更低,更优选0.2%或更低,0.3%或更低,优选0.08%以下的0.1%或更低,0.08%或更少的0.08%或更少。氮气,0.2%或更少的氢,0.2%或更低,优选0.05%或更低,更优选0.02%或更低的Ca是可接受的。\n\n(nd,dy),(pr,dy)或(nd,pr,dy)的组合是r的高实用性。而且,量子量优选为27至34%。 Dy的一部分可以用TB替换。如果R的量小于27%,则矫酮矫顽力IHC的降低变得显着,并且在34%以上,残留磁通密度Br和最大能量产品(BH)最大值大大降低。\n\nB的量优选为0.5至2%,更优选为0.8至1.2%。如果B的量小于0.5%,则未获得实际使用的IHC,BR(BH)Max的大大降低超过2%。众所周知,B的一部分可以由C代替,并适用于本发明。\n\n为了提高表面磁通密度和耐腐蚀性,优选含有选自Nb,Al,Co,Ga和Cu组的至少一种元素。\n\nNb的含量优选为0.1至2%。在烧结过程中由于包含Nb而导致的,可以抑制晶粒的异常晶粒生长。如果Nb含量小于0.1%,则不观察到添加效果,并且在2%以上,Nb硼化物的形成量增加,并且Br的降低变得显着。\n\nAl的含量优选为0.02-2%。如果Al含量小于0.02%,则可以提高IHC和耐腐蚀性,并且Br(BH)Max显着降低超过2%。\n\nCO含量优选为0.3至5%。如果CO含量小于0.3%,则不能获得改善居里点和耐腐蚀性的效果,并且在大于5%以上,BR和IHC在很大程度上降低。\n\nGA含量优选为0.01至0.5%。如果Ga含量小于0.01%,则不能获得IHC的改善效果,并且BR(BH)Max的还原在超过0.5%。\n\nCu含量优选为0.01至1%。如果Cu含量小于0.01%,则不能获得耐腐蚀性和改善IHC的效果,并且BR的还原在比1%上更明显。\n\n当Cu和Co含有在上述特定剂量范围内时,优选的是,获得散布第二热处理的允许温度宽度的效果。\n\n发明极点不赞成戒指磁铁R.2T.14B金属化合物(R是含有Y的稀土元素中的至少一种,如果各向异性磁粉是用粘合剂粘合的键合磁铁,则希望使用各向异性的磁性粉末施加的平均晶粒尺寸为0.01至0.5μm,以及热处理,HDDR等。作为粘合材料\n\n可以使用胶,尼龙,环氧树脂,PPS其他塑料材料或锌或低熔点合金,其是已知材料。\n\n发明极点不赞成戒指磁铁当R-T-N金属间化合物(R是含有Y,T是Fe或Fe和Co)各向异性磁粉的稀土元素的至少一个作为主相时是用粘合剂粘合的粘合磁体,用于SM的金属间化合物-fe-n,平均1至10μm在期望使用研磨的各向异性细粉末。不显着恶化磁性的添加剂和不可避免的杂质是可接受的。作为粘合剂,可以使用橡胶,尼龙,环氧树脂,PPS其他塑料材料或低熔点合金是已知材料的。\n\n【0019】\n\n通过用已知的铁氧体磁体制备本发明的PoilID环磁体,优选成本性能。\n\n特别是(A.1-xr\'x)o·n [(fe1-yM.y的)2O.3](原子比)\n\n(然而,A是Sr和/或Ba,R\'是含有y的稀土元素中的至少一个,并且始终包括La,并且M是CO或CO和Zn,x,y和n分别是条件:\n\n5.0≤n≤6.4\n\n0.01≤x≤0.4,和\n\n0.005≤y≤0.04\n\n这是一个满足的数字。优选的是因为它具有由)表示的主要成分组合物,并且当使用由具有磁移式型晶体结构的高性能铁氧体磁体制成的极性烧结环磁体时,旋转机器性能增强。\n\n为了提高饱和磁化,La至R\'的比例优选为50原子%或更多,更优选为70原子%或更多,特别优选为99原子%或更多。理想情况下,除了不可避免的R\'组件外,R\'可以由La组成。因此,作为R\'元件原料,使用由Pr,Nd和Ce的至少一个和不可避免的R\'组成的廉价的锯齿氧化物的氧化物和至少一个和不可避免的R\'组分组成的氧化物是实际的PR,ND和CE。是。在这种情况下,R\'由La和Nd,Pr和Ce的至少一个和不可避免的R\'组成。\n\n特别优选摩尔比率N.0至6.4,更优选为5.5至6.3和5.7至6.2。除了磁铁Byte相之外的异性阶段大于6.4(α-Fe2O.3ETC..\n\nX优选为0.01至0.4,更优选为0.1至0.3,特别优选0.15至0.25。如果x小于0.01,则不观察到添加效果,并且在0.4中,表面磁通密度大大降低。\n\n在y和x期间,Y = x /(2.0n)之间的关系需要被认为是充电补偿的理想选择,但y是x /(2.6n)或更多,如果它或更少,则是x /(1.6 n)获得包含高BR和高退磁曲线的铁氧体磁铁。如果Y从X /(2.0N),FE偏移2+有可能存在障碍。在典型的例子中,Y的优选范围为0.04或更小,特别是0.005至0.03。此外,5.7≤n≤6.2,0.2≤x≤0.3和1.0 2和曹(Caco3包含预定量实际上是很重要的。\n\nSiO.2是一种抑制烧结时晶粒生长的添加剂,铁氧体磁体的总质量为100%SiO。2含量优选为0.05至0.55%,更优选0.25至0.55%。 SiO.2当含量小于0.05%时,在烧结时晶粒生长过度进展,并且矫顽力大大降低,并且晶粒生长过度抑制在0.55%以上。\n\n由于晶粒生长导致的取向度的提高不足,BR大大降低。\n\nCaO是促进晶粒生长的添加剂,CaO含量优选为0.35至1.5%,为100质量%的铁氧体磁体,更优选为0.4至1.5%,特别优选为0.5至1.5%。当CaO含量大于1.5%时,烧结过程中晶粒生长过度进展,矫顽力大大降低,如果小于0.35%,则晶粒生长过度抑制,并且改善程度由于晶粒生长导致的取向度并未得到改善。它足够了,BR大大降低。\n\n如果具有作为主相具有称为初级相的各向异性磁粉的各向异性磁粉作为主要相的各向异性磁粉是键合磁体的各向异性磁粉是优选的。\n\n【0020】\n\n在本发明中极度烧结环磁体的模制通过设置有例如模制芯片1(用于对称的8极极性各向异性取向)的压制机进行。在图1中。如图3所示,实线是图3中AA的横截面。如图2B所示,虚线是B-B横截面中的线圈位置。在模制模具1中,附图标记7表示由铁磁体制成的骰子,并且8是具有非磁性圆形横截面的芯,其在模具7的环形空间中同心地设置。在管芯7的圆柱形内表面上形成多个凹槽12,并且磁场产生线圈2b嵌入每个凹槽12中。磁场产生线圈2b具有弯曲部分,用于在中间产生螺旋极部分。具有与芯8类似的形状的圆形横截面的非磁性间隔件9设置在管芯7的内周表面上以覆盖芯8。间隔件9和芯8之间的空间是腔10。当电流在每个线圈2b中激励时,在腔10中产生由箭头所示的磁通量,并且n,s,n,s的替代极性。的形成磁极。\n\n接下来,图3的模具1是如图3所示的极度将描述模制用于烧结环磁体的成形主体的方法的示例。首先,在图2的上冲头3的状态下,拉起了2,在腔体中填充预定量的原料粉末或浆料。接下来,将脉冲电流施加到线圈2b,烧结磁体或浆料的细粉或浆料取向,并且上冲头3降低,并且下冲头4和下冲头4对称降低到位置此后,获得下冲头4和上冲头3以相同的速度,压力和极离散环磁体的模制体压在腔方向上。此外,当上冲头3加压时,模具以上冲头3的一半的速度降低,并且如上所述,轴向左右。对称可以获得长度的平行磁极部分。\n\n优选的是,施加的极性取向磁场强度高达0.4至2.0mA / m(5至25只Koe)​​。如果对准磁场强度小于0.4mA / m,则取向变得不足,并且难以在工业生产中确保高2.0 mA / m的高导向磁场强度。压缩成型的压力抑制裂缝并获得预定程度的取向49至392MPa(500至4000kc / cm),用于基于R-T-B基烧结磁体的压缩2),用于铁氧体磁铁的模制物体29至39MPa(300至400千克/厘米)2优选地。\n\n【0021】\n\n如果成型机是使用伺服电机或使用凸轮的液压机的伺服压力机,或者液压机具有具有数控液压缸的液压机,则下冲头沿上冲头的迁移反转。通过向前移动模具或者将管芯沿相同的方向移动到上冲头的运动,可以在模具中的原料在垂直方向上移动的位置(下文中称为中性线)。\n\n本发明的发明人最小化了原料在模具的位置,通过控制模具螺旋线的中央和中性线形成螺旋定向部分的模具的位置。影响通过设计和实验证实了有效性。\n\n【0022】\n\n烧结磁铁粘结磁铁在填补填充运营的生产中,磁极平行磁极部A,C分开Tora-Sectoral Pole SectionB.轴向方向还发现长度可以改变。填充操作是将原料填充到腔中后的上冲头所以在加压之前,移动模具和下冲头的相对位置以将原材料粉末馈送到模具的内部。通过欠填充轴向方向中间位置B具有不同的长度极性环磁铁的它可以到一个非中心位置。这意味着可以使用相同的模具调节总扭矩或齿轮扭矩焦点。\n\n另外,具有相同换档角度的轴向尺寸取决于底部填充的使用极性环可以生产磁铁。\n\n【0023】\n\n基于R-T-B的烧结磁体模塑体密度的形成:3.7至4.6mg / m3用于铁氧体烧结磁铁的模塑物体的型号密度:2.6至3.2mg / m3调整程度。对于R-T-B键合磁体和R-T-N键合磁体,用于压缩成型5.5至6.5mg / m3注塑成型4.0至5.7mg / m3调整程度。 2.6至3.6mg / m的铁氧体粘结磁铁的注塑成型3调整程度。\n\n接下来,保持在加压所获得的可压缩压缩体的状态。用于磁场生成线圈将相反方向的脉冲电流与上述方向通电。在粘结的磁体中,脱磁和减压是重要的,因为磁性粉末粘附影响耐腐蚀性,污染等的可靠性。\n\n【0024】\n\n在本发明中极度烧结环磁体的尺寸没有特别限制,但轴向长度(1)和外径尺寸(DO)分别是L = 5至100mm,优选L = 8至50mm,并且DO = 3至200 MM。,优选地,DO = 7至50mm的实用性高。赋予极性要做 200mm极度烧结环磁铁不符合小型化的需求。也在l 传统的无一体化模塑产品没有显着差异,L> 100 mm不兼容对小型化的需求。\n\n在本发明中极度尽管烧结环磁体的磁极的数量没有特别限制,但是在外径表面或内部的圆周方向上以相等的间隔或不同的间隔形成4至100极,优选4至24个管道是非常实用的。直径表面。齿槽扭矩的变化可以在2.5%以内。\n\n【0025】\n\n【例子】\n\n在下文中,将通过实施例详细描述本发明。的本发明不受实施例的限制。\n\n(例1)\n\nND:30.5质量%,DY:1.5质量%,GA:0.1质量%,B:1.0质量%,Fe:64.8质量%合金粗粉,具有惰性气体气氛中的主要成分组合物的组成,平均粒径得到4.5μm(F.S.S.S.S.S.S.),用于烧结磁体的细粉。当测量该烧结磁体的细粉末的堆积密度1.7mg / m时3见面。接下来,使用图1的模制芯片。图2中所示的薄磁极部分取向能够。如图1所示,通过伺服压力机拉起,该伺服压力机能够进行数值控制上柱和模具的运动在腔体中,填充预定量的细粉末。模具是8非常极离散类型和变速角11°这是。进行率下属操作,使得填充原料的中心与模具弯曲部分重合。上冲头降低,同时间歇地将每个磁极的5.0ka转弯的脉冲电流间歇地施加到腔体三个冲孔。此时,在将模具降低到上冲头的一半处的同时进行压缩成型,并且下冲头基本上加压到腔方向。之后,将基因的密度脱磁和获得的是4.2mg / m3见面。\n\n接下来,该模具约0.07Pa(5×10)-4在托的真空期间,在1100℃下烧结2小时并冷却至室温。接下来,在AR气氛中在550℃下在550℃下进行第二热处理以冷却至室温。接下来,处理端面和外周表面(未加工内径表面),并通过电沉积涂覆热固性树脂(环氧树脂),外径为14mm,内径为9mm,和轴向长度为15mm,轴向长度为15mm。获得逆流环磁体。接下来,在圆周方向上测量表面磁通密度,并且沿着沿着极性施加方向饱和的总磁通量饱和的条件在圆周方向上测量表面磁通密度。\n\n从轴向端的轴向端面5个位置测量测量位置。下面的两个地方和两个转弯角°获得了与相应数据对应的数据。波形形状如图2所示。在图1中的平行磁极部分(A)中,如图4所示,与两个位置相同的正弦波的波形形状是下面的平行磁极(C)。\n\n与(a)11的波形形状相比°除了它们是异磷酸盐之外,获得了基本上等同的波形形状。此外,螺旋杆部分B的数据在两者之间是中间的。细胞杆第b部分轴向方向长度为3.0毫米,多体戒指磁铁总体轴向方向这是长度的20%。当测量该管道环磁体的齿槽扭矩的变化时,它是一个非常小的值,2%。齿轮扭矩的测量用转子芯组装并与转子芯组合,并且在执行1次旋转时测量每个齿槽时的每个齿槽的变化,并且用单独的样品拍摄样品20可用性的数量。\n\n而且,如图2所示。如图1所示,如图1所示。如图1所示。轴修复顶部,转子获得有用的旋转机器性能,其构成5并将其掺入预定的旋转机器中。\n\n【0026】\n\n比较例1\n\n螺旋桨部分轴向方向我们检查几乎没有长度。多种极性外观戒指磁铁换档11.°制作固定轴向方向获得了长度约0.1mm的偏振环磁体的紧凑型。模塑主体1100℃当烧结2小时时,从这些螺旋杆部件裂解破裂并使烧结开裂承受耐用。\n\n【0027】\n\n比较例2\n\n螺旋桨部分轴向方向每个长度的平行杆部分轴向长度它被认为超过更长时间。平行杆部件轴向方向彼此长度为4毫米,螺旋杆的轴向长度为7毫米。除此之外,以与实施例1相同的方式制造极性拉环磁体。当测量该杆染料环磁体(n = 50)的齿槽扭矩的变化时,它为约10%和更大的值。该杆染料环磁体类似于实施例1轴修复顶部,转子可以配置5并将其整合到预定的旋转机器中,但如果齿轮扭矩发生变化,则每个旋转机器性能存在差异,因此由于批量生产差异,因此不可能在没有客户的需求的情况下实现稳定的商业化。据了解,它已经出局了。\n\n【0028】\n\n(例2)\n\nSRCO3粉末(包括Ba,Ca作为杂质)和α-Fe2O.3粉末,LA.2O.3使用粉末和CO3O4粉末煅烧(SR)后0.80洛杉矶0.20)o·5.95 [(Fe0.983CO.0.017的)2O.3在湿混合后,作为所示的主要成分组成,然后在大气中在1250℃下烘烤2小时。煅烧产物用辊磨机粗略地粉碎以获得粗粉。然后,通过已知方法造粒,液体磨削磨削磨削,平均粒径为0.8μm(S. S.S.S.S.S. S ..。在早期的细粉碎中,将粗粉的质量比引入细粉化La2O.3只加入粉末0.6质量%。 Srco3粉末,Caco作为粉碎早期涂层的烧结助剂3粉和SiO.2在粉末的质量比中加入0.1质量%,1.0质量%和0.3质量%,以将粗粉粉末引入研磨中。\n\n当测量该铁氧体磁体的原料的堆积密度1.4mg / m时3见面。接下来,利用图1的成型模具。如图2所示,通过能够进行数值控制上RAM和管芯的移动的伺服压力机首先拉动上冲头。在腔内填充预定量的所述细粉末。模具是8非常极离散类型和变速角11°这是。进行率下属操作,使得填充原料的中心与模具弯曲部分重合。在间歇地将杆动态磁场间歇地将杆动态磁场间歇地施加到腔0.4 mA / m(5koe)三次。此时,模压为44MPa(450kg / cm),同时降低上冲头的半速度的骰子。2通过)进行压缩成型,并且下冲头基本上加压到腔方向上。之后,所获得的模塑体的密度为3.2mg / m3见面。然后,在1200℃下烧结2小时,得到具有以下主要成分组合物(La overcoposition:La / Co = 1.2)的烧结体。\n\n(SR.0.76洛杉矶0.24)o·5.72 [(FE0.983CO.0.017的)2O.3]\n\n接下来,加工烧结体和外周表面的端面(内径表面未加工),外径为20mm,内径为14mm,轴向长度为30mm,轴向长度为30毫米。接下来,在圆周方向上测量表面磁通密度,并且沿着沿着极性施加方向饱和的总磁通量饱和的条件在圆周方向上测量表面磁通密度。\n\n在5.0mm的轴向端面5个位置测量测量位置。下面的两个地方和较低的2个地方11°获得了与相应数据对应的数据。细胞杆第b部分轴向方向长度为8.0毫米,多体戒指磁铁总体轴向方向大约是长度的27%。当测量该杆染料环磁体(n = 50)的齿槽扭矩的变化时,它具有2%的非常小的值。\n\n而且,如图2所示。如图1所示,如图1所示。如图1所示。轴修复顶部,转子5.获得了非常有用的旋转机器性能,其配置和结合到预定的旋转机器中。\n\n【0029】\n\n(比较例3)\n\n螺旋桨部分轴向方向长度缩短并检查。螺旋桨部分轴向方向获得长度为2.0mm的杆不批准环磁体的模塑制品。模塑主体1100℃当烧结2小时时,从这些螺旋杆部件裂解破裂并使烧结开裂承受耐用。\n\n【0030】\n\n比较例4.\n\n螺旋桨部分轴向方向每个长度的平行杆部分轴向长度它被认为超过更长时间。平行杆部件轴向方向彼此长8毫米,螺旋杆的轴向长度为22毫米。除此之外,以与实施例1相同的方式制造极性拉环磁体。当测量该发球性环磁体(n = 50)的齿槽扭矩的变化时,它具有9%的大值。该杆染料环磁体类似于实施例1轴修复顶部,转子可以配置5并将其整合到预定的旋转机器中,但如果齿轮扭矩发生变化,则每个旋转机器性能存在差异,因此由于批量生产差异,因此不可能在没有客户的需求的情况下实现稳定的商业化。据了解,它已经出局了。\n\n【0031】\n\n(例3)\n\nND:29.2质量%,GA:0.8质量%,B:1.0质量%,CO:10.5质量%,以及剩余Fe的主要成分组成的合金是真空溶解,并进行卷冷却以获得铸造合金。滚动冷却使用由铜制成的单辊方法,并产生,使得板厚度为300至500μm。冷却速度约为5×102它对应于°C / sec。在均质化热处理之后,在该合金上进行,室温下的储氢、以10℃/℃的温度上升速率加热至830℃。在该温度保持2小时后,进行脱氢处理1小时。在脱氢处理结束后,用氩气氛替换炉子并冷却。得到的合金,从而分类为32至106μm。合金粗粉和环氧树脂混合并用作原料。\n\n接下来,使用根据图1的成型模具。如图2所示,如图2所示。如图1所示,根据图1所示,模制模具可以用来用来用来对上RAM和管芯的运动的数值控制,并且首先被拉动腔上部冲头。在预定量内材料他们被填满了。模具是8极极杆这是一个各向异性类型和换档角度3°。进行率下属操作,使得填充原料的中心与模具弯曲部分重合。上冲头降低,同时间歇地将每个磁极的5.0ka转弯的脉冲电流间歇地施加到腔体三个冲孔。\n\n加热所得成型体并固化树脂割球键合获得环形磁铁。通过电沉积涂覆热固性树脂(环氧树脂),并且外径为14mm,内径为10mm的对称8极各向异性环磁体,长度为15mm的长度为15mm在图1中。获得1。接下来,在圆周方向上测量表面磁通密度,并且沿着沿着极性施加方向饱和的总磁通量饱和的条件在圆周方向上测量表面磁通密度。\n\n从轴向端的轴向端面5个位置测量测量位置。在图1中的并联磁极部分(A)中,如图1所示,与平行磁极部分(C)11中的(a)的波形形状相比,相同的基本正弦波的波形形状为11°获得了多相波形形状。当测量该杆染料环磁体(n = 50)的齿槽扭矩的变化时,含有1.7%的非常小的值。\n\n【0032】\n\n(参考例1)\n\n使用与示例3中的相同原料的极点反对保税戒指制造。\n\n图8.显示使用根据图1的成型模具进行模塑。7能够磁极部分对准。上述原料首先通过能够进行数值控制上RAM和管芯的运动的伺服压力机填充具有预定量的原料的原料。模具是16非常极点不赞成型被3°移位。进行率下属操作,使得填充原料的中心与模具弯曲部分重合。用杆极降低腔,脉冲电流为4.0ka的脉冲电流,间歇地间歇地三次间歇地间歇的脉冲电流。加热并固化树脂以固化获得的树脂割球键合获得环形磁铁。通过电沉积涂覆热固性树脂(环氧树脂),并且外径为14mm,内径为8mm,内径为8mm,轴向长度为20mm。接下来,在圆周方向上测量表面磁通密度,并且沿着沿着极性施加方向饱和的总磁通量饱和的条件在圆周方向上测量表面磁通密度。\n\n测量位置在4.0mm的轴向端面的四个位置测量。图3中的平行磁极部分(a)和图3中的平行磁极部分(c)。°获得多相波形,并且波形基本相同。这极保税测量环磁体(n = 50)的齿槽扭矩的变化,含有2.2%的非常小的值。\n\n【0033】\n\n【发明效果】\n\n如上所述,根据本发明,极间距的小变化,齿槽扭矩的小变化和杆紊乱环磁体和没有多级成型的杆状磁体和模制模具我能提供它。\n\n[简要描述;简介]\n\n【图1】图3是表示本发明的杆状环磁体的外观的示意图。\n\n【图2】图3是表示用于模制本发明的极性环磁体的模具结构的一例的图。\n\n图3.图3是表示图1的模具结构的轴横截面的图。\n\n图4.图3是图1的极离散环磁体的侧表面的展开图。\n\n图5.图3是图1的极离散环磁体的表面磁通量波形。\n\n6.发明示例使用杆倾倒环磁铁的转子\n\n图7.参考例子图3是表示用于模塑杆不批准环磁体的模具结构的一例的图。\n\n图8参考例子图3是表示极点不批准环磁体的外观的示意图。\n\n图9图3是表示用于模塑传统极管环形环形磁体的模具结构的图。\n\n[标志的说明]\n\n1模子,2B,2C,2D线圈,3个上冲头,4个下冲头,\n\n五转子那5A成型材料,6.a中立线,6b中性线,\n\n7骰子,8个芯,9个间隔物,10个空腔,12个凹槽');
INSERT INTO `os_patent_instruction_text` VALUES (12986, 22815, '[0001] Die vorliegende Erfindung bezieht sich auf ein Verfahren zum Pressen eines Seltenerdmetall-Legierungspulvers und auf ein Verfahren zur\n\nHerstellung eines Sinterkörpers aus einer Seltenerdmetall-Legierung.\n\n\n\n\n\n[0002] Ein Seltenerdmetalllegierungs-Sintermagnet (-Permanentmagnet) wird normalerweise hergestellt durch Pressen (Verdichten) eines Pulvers\n\naus einer Seltenerdmetall-Legierung, Sintern des resultierenden Pulverpresslings und anschließende Durchführung einer Alterungsbehandlung mit\n\ndem Sinterkörper. Permanentmagnete, die derzeit in großem Umfang für verschiedene Anwendungszwecke eingesetzt werden, umfassen Magnete\n\nauf Seltenerdmetall-Kobalt-Basis und Magnete auf Seltenerdmetall-Eisen-Bor-Basis. Unter anderem werden die Magnete auf Seltenerdmetall-Eisen-\n\nBor-Basis (nachstehend als \"Magnete auf R-Fe-B-Basis\" bezeichnet, worin R für eines der Elemente der Seltenen Erden einschließlich Y, Fe für Eisen\n\nund B für Bor stehen) immer häufiger in verschiedenen elektronischen Geräten verwendet. Dies ist darauf zurückzuführen, dass ein Magnet auf R-Fe-\n\nB-Basis ein maximales Energieprodukt aufweist, das höher ist als bei irgendeinem der verschiedenen anderen Magnet-Typen und dass er dennoch\n\nverhältnismäßig billig ist.\n\n\n\n\n\n[0003] Ein Sintermagnet auf R-Fe-B-Basis umfasst eine Hauptphase, die im Wesentlichen aus einer tetragonalen R2Fe14B-Verbindung besteht, eine\n\nR-reiche Phase, die beispielsweise Nd enthält, und eine B-reiche Phase. In dem Sintermagneten auf R-Fe-B-Basis kann ein Teil des Fe durch ein\n\nÜbergangsmetall wie Co oder Ni ersetzt sein und ein Teil des Bors (B) kann durch Kohlenstoff (C) ersetzt sein. Ein Sintermagnet auf R-Fe-B-Basis, auf\n\nden die vorliegende Erfindung mit Erfolg anwendbar ist, ist beispielsweise in den US-Patenten Nr. 4 770 723 und 4 792 368 beschrieben.\n\n\n\n\n\n[0004] Nach dem Stand der Technik wird eine Legierung auf R-Fe-B-Basis als Material für einen solchen Magneten bisher nach einem Block-\n\nGießverfahren hergestellt. Bei einem Block-Gießverfahren werden normalerweise ein Metall der Seltenen Erden, elektrolytisches Eisen und eine\n\nFerrobor-Legierung als jeweilige Ausgangsmaterialien durch Anwendung eines Induktionserhitzungsverfahrens geschmolzen und dann wird die auf\n\ndiese Weise erhaltene Schmelze in einer Gießform verhältnismäßig langsam abgekühlt, wodurch ein Legierungsblock erhalten wird.\n\n\n\n[0005] In jüngster Zeit hat ein Schnellabkühlungsverfahren, beispielsweise ein Bandgießverfahren oder ein Schleudergießverfahren, viel\n\nAufmerksamkeit gefunden. Bei einem Schnellabkühlungsverfahren wird eine geschmolzene Legierung mit einer einzelnen Abschreckwalze, einer\n\nDoppelabschreckwalze, einer rotierenden Scheibe oder der inneren Oberfläche einer rotierenden zylindrischen Gießform in Kontakt gebracht\n\nund verhältnismäßig schnell abgekühlt, wodurch aus der geschmolzenen Legierung eine erstarrte (verfestigte) Legierung entsteht, die dünner\n\nist als ein Legierungsblock. Die auf diese Weise hergestellte erstarrte Legierung wird nachstehend als \"Legierungsflocke\" bezeichnet. Die durch\n\nAnwendung eines solchen Schnellabkühlungsverfahrens gebildete Legierungsflocke hat normalerweise eine Dicke von etwa 0,03 bis etwa 10 mm.\n\nBei dem Schnellabkühlungsverfahren beginnt die geschmolzene Legierung von ihrer Oberfläche her, die mit der Oberfläche der Abschreckwalze\n\nin Kontakt gebracht worden ist, zu erstarren bzw. fest zu werden. Diese Oberfläche der geschmolzenen Legierung wird hier als \"Walzenkontakt-\n\nOberfläche\" bezeichnet. Bei dem Schnellabkühlungsverfahren wachsen somit säulenförmige Kristalle in Richtung der Dicke, ausgehend von der\n\nWalzenkontakt-Oberfläche. Als Folge davon weist eine schnell erstarrte Legierung, die durch Anwendung eines Bandgießverfahrens oder eines\n\nanderen Schnellabkühlungsverfahrens hergestellt worden ist, eine Struktur auf, die eine kristalline R2Fe14B-Phase und eine R-reiche Phase aufweist.\n\nDie kristalline R2Fe14B-Phase weist in der Regel eine Nebenachse einer Größe von etwa 0,1 bis etwa 100 &mgr;m und eine Hauptachse einer Größe\n\nvon etwa 5 bis etwa 500 &mgr;m auf. Andererseits ist die R-reiche Phase, bei der es sich um eine nicht-magnetische Phase handelt, die ein Element\n\nder Seltenen Erden R in einer verhältnismäßig hohen Konzentration enthält und eine Dicke (entsprechend der Breite der Korngrenze) von etwa 10\n\n&mgr;m oder weniger aufweist, an der Korngrenze zwischen den kristallinen R2Fe14B-Phasen dispergiert.\n\n\n\n\n\n[0006] Im Vergleich zu einer Legierung, die nach einem konventionellen Blockgießverfahren oder Formgießverfahren hergestellt worden ist (eine\n\n\n\nsolche Legierung wird nachstehend als \"Block-Legierung\" bezeichnet), wird die schnell erstarrte Legierung innerhalb eines kürzeren Zeitraums\n\n\n\nabgeschreckt (d.h. mit einer Abkühlungsgeschwindigkeit von 102 °C/s bis 104 °C/s). Daher weist die schnell erstarrte Legierung eine feinere Struktur\n\n\n\n(Korngefüge) und eine geringere Kristall-Korngröße auf. Außerdem umfasst in der schnell erstarrten Legierung die Korngrenze einen größeren\n\n\n\nBereich und die R-reiche Phase ist über die Korngrenze breit und dünn dispergiert. Die schnell erstarrte Legierung weist somit außerdem eine gute\n\n\n\nDispergierfähigkeit der R-reichen Phase auf. Da die schnell erstarrte Legierung die vorstehend angegebenen vorteilhaften Merkmale aufweist, kann aus\n\n\n\nder\n\n\n\n\n\nschnell erstarrten Legierung ein Magnet mit ausgezeichneten magnetischen Eigenschaften hergestellt werden.\n\n\n\n\n\n[0007] Ein alternatives Legierungsherstellungsverfahren, als \"Ca-Reduktionsverfahren (oder Reduktions(Diffusion-Verfahren)\" bezeichnet,\n\n\n\nist ebenfalls aus dem Stand der Technik bekannt. Dieses Verfahren umfasst die folgenden Bearbeitungs- und Herstellungsstufen: Zugabe von\n\n\n\nmetallischem Calcium (Ca) und Calciumchlorid (CaCl) entweder zu einer Mischung aus mindestens einem Seltenerdmetalloxid, Eisenpulver, reinem\n\n\n\nBorpulver und Ferroborpulver oder Boroxid in einem vorgegebenen Verhältnis oder zu einer Mischung, die ein Legierungspulver oder ein gemischtes\n\n\n\nOxid aus diesen Aufbau-Elementen in einem vorgegebenen Verhältnis enthält; Durchführung einer Reduktions/Diffusions-Behandlung in einer inerten\n\n\n\nAtmosphäre mit der resultierenden Mischung; Verdünnung des erhaltenen Reaktanten zur Herstellung einer Aufschlämmung; und anschließendes\n\n\n\nBehandeln der Aufschlämmung mit Wasser. Auf diese Weise kann ein Feststoff (Formkörper) aus einer Legierung auf R-Fe-B-Basis erhalten werden.\n\n\n\n\n\n[0008] Es sei darauf hingewiesen, dass ein kleiner Block aus einer festen Legierung nachstehend hier als \"Legierungsblock\" bezeichnet wird.\n\n\n\nDer \"Legierungsblock\" kann irgendeine von verschiedenen Formen von festen Legierungen haben, die nicht nur erstarrte Legierungen, die durch\n\n\n\nAbkühlen einer Schmelze eines Legierungsmaterials hergestellt worden sind (beispielsweise eines Legierungsblockes, der nach dem konventionellen\n\n\n\nBlockgießverfahren hergestellt worden ist, oder einer Legierungsflocke, die unter Anwendung eines Schnellabkühlungsverfahrens, beispielsweise eines\n\n\n\nBandgießverfahrens, hergestellt worden ist), sondern auch eine feste Legierung umfassen, die nach dem Ca-Reduktionsverfahren hergestellt worden\n\n\n\nist.\n\n\n\n\n\n[0009] Ein Legierungspulver, das gepresst werden soll, wird erhalten, indem man die folgenden Bearbeitungsstufen durchführt: grobes Pulverisieren\n\n\n\neines Legierungsblockes in einer dieser Formen unter Anwendung beispielsweise eines Wasserstoffeinschluss-Verfahrens und/oder unter Anwendung\n\n\n\nverschiedener mechanischer Mahlverfahren (beispielsweise durch Verwendung einer Scheibenmühle); und feines Pulverisieren des resultierenden\n\n\n\ngroben Pulvers (mit einer mittleren Teilchengröße von 10 bis 500 &mgr;m) durch Anwendung eines Trockenmahl-Verfahrens beispielsweise unter\n\n\n\nVerwendung einer Strahlmühle.\n\n\n\n\n\n[0010] Das Legierungspulver auf R-Fe-B-Basis, das gepresst (verdichtet) werden soll, hat vorzugsweise eine mittlere Teilchengröße von 1,5\n\n\n\nbis etwa 6 &mgr;m, um ausreichende magnetische Eigenschaften zu erzielen. Es sei darauf hingewiesen, dass der hier verwendete Ausdruck\n\n\n\n\"mittlere Teilchengröße\" eines Pulvers, wenn nichts anderes angegeben ist, steht für einen massenmittleren Durchmesser (MMD). Wenn jedoch\n\n\n\nein Pulver mit einer derart geringen mittleren Teilchengröße verwendet wird, ist die resultierende Fließfähigkeit, Kompaktibilität (einschließlich der\n\n\n\nHohlraumfüllungsdichte und Pressbarkeit) und Produktivität schlecht.\n\n\n\n\n\n[0011] Ein Pulver, das durch Anwendung eines Schnellabkühlungsverfahrens, beispielsweise eines Bandgießverfahrens (bei einer\n\n\n\nAbkühlungsgeschwindigkeit von 102 bis 104 °C/s) hergestellt worden ist, weist insbesondere eine geringere mittlere Teilchengröße und eine engere\n\n\n\nTeilchengrößenverteilung auf als ein Pulver, das unter Anwendung eines Blockgießverfahrens hergestellt worden ist. Das zuerst genannte Pulver weist\n\n\n\nsomit ein signifikant schlechteres Fließvermögen auf als das zuletzt genannte Pulver. Daher kann die Schwankung in Bezug auf die Menge des Pulvers,\n\n\n\ndas in einen Formhohlraum eingefüllt werden soll, den zulässigen Bereich übersteigen oder die Füllungsdichte desselben innerhalb des Hohlraums\n\n\n\nkann ungleichförmig werden. Als Folge davon kann die Schwankung in Bezug auf die Masse oder Größe des resultierenden Presslings den zulässigen\n\n\n\nBereich übersteigen oder der Pressling kann reißen oder zersplittern. Außerdem können in diesem Fall die Magnetisierungsrichtungen des Presslings\n\n\n\ndurch ein richtendes Magnetfeld nicht genügend ausgerichtet werden und der resultierende Sintermagnet weist schlechte magnetische Eigenschaften\n\n\n\n(z.B. in Bezug auf seine Remanenz) auf.\n\n\n\n\n\n[0012] Entsprechend der Richtung, in der das richtende Magnetfeld angelegt wird, sind die Press- und Verdichtungsverfahren zur Herstellung von\n\n\n\nPresslingen für Magnete grob in zwei Typen unterteilbar: ein paralleles Pressverfahren, bei dem das ausrichtende Magnetfeld parallel zu der Press\n\n\n\n(oder Komprimier)-Richtung angelegt wird, und ein senkrechtes (lotrechtes) Pressverfahren, bei dem das ausrichtende Magnetfeld senkrecht zu der\n\n\n\nPressrichtung angelegt wird.\n\n\n\n\n\n[0013] Nachstehend wird ein Press- und Verdichtungsverfahren zur Herstellung eines Presslings für einen Bogen-Magneten unter Bezugnahme\n\n\n\nauf die Fig. 1(a) und Fig. 1(b) näher beschrieben. In den Fig. 1(a) und Fig. 1(b) gibt der Pfeil B die Richtung an, in der das ausrichtende Magnetfeld\n\n\n\nwährend des Pressverfahrens angelegt wird.\n\n\n\n\n\n[0014] Zur Verbesserung der Produktivität und der magnetischen Eigenschaften wird der in Fig. 1(a) dargestellte Bogenmagnet 1a  erhalten,\n\n\n\nindem man den in Fig. 1(b) gezeigten Sinterblock 1b  zuerst herstellt und dann schneidet. Bei dem Stand der Technik wird ein Pressling, der zu dem\n\n\n\nSinterblock 1b  verar\n\n\n\n\n\nbeitet werden soll, durch ein senkrechtes (lotrechtes) Pressverfahren hergestellt. Der Grund dafür ist der, dass das senkrechte Pressverfahren es\n\n\n\nermöglicht, ein gegebenes Pulver zu pressen und zu verdichten, ohne seine Magnetfeld-Orientierungen zu stören. Daher weist ein Magnet, der nach\n\n\n\ndem senkrechten Pressverfahren hergestellt worden ist, normalerweise bessere magnetische Eigenschaften auf als ein Magnet, der durch das parallelePressverfahren hergestellt worden ist.\n\n\n\n\n\n[0015] Mittlerweile werden häufig in der Nähe einer Pressform-Öffnung Jochelemente vorgesehen, die einen Hohlraum in einer Pressform aus\n\n\n\neinem nichtmagnetischen Material definieren, wodurch der Magnetfluss in Richtung auf die Innenseite des Hohlraums konzentriert wird und die Stärke\n\n\n\ndes ausrichtenden Magnetfeldes erhöht wird. Die Jochelemente sind normalerweise innerhalb von 15 cm ab der Innenwand der Pressform-Öffnung,\n\n\n\ngemessen in der Ausrichtungs-Richtung, vorgesehen. Diese Anordnung wird deshalb angewendet, weil die Remanenz Br des resultierenden Magneten\n\n\n\numso höher ist, je höher die Stärke der ausrichtenden Magnetfelder innerhalb des Hohlraums ist. Wenn eine solche Methode zur Erhöhung der Stärke\n\n\n\ndes ausrichtetenden Magnetfeldes im Innern des Hohlraums unter Verwendung der Jochelemente mit dem vorstehend beschriebenen senkrechten\n\n\n\nPressverfahren kombiniert wird, dann kann ein Permanentmagnet mit noch besseren Eigenschaften erhalten werden.\n\n\n\n\n\n[0016] In den letzten Jahren wird häufig ein feines Pulver mit Teilchengrößen von 6 &mgr;m oder weniger (FSSS Teilchengrößen) verwendet, um die\n\n\n\nKorngrößen eines Sintermagneten zu verringern. Um solche feinen Pulverteilchen auszurichten, muss ein stärkeres Magnetfeld als die konventionellen\n\n\n\nangelegt werden. Wenn jedoch die magnetische Feldstärke in dem Pressform-Hohlraum durch Verwendung der Jochelemente erhöht wird, weist\n\n\n\ndie magnetische Feldstärke in dem Pressform-Hohlraum eine ungleichförmige Verteilung auf, wobei die magnetische Feldstärke in Richtung auf das\n\n\n\nEnde des Hohlraums in der Ausrichtungsrichtung zunimmt. Ein solches Magnetfeld zieht das Magnetpulver in dem Hohlraum stark an in Richtung auf\n\n\n\ndie Jochelemente. Als Folge davon wird die scheinbare Dichte des Magnetpulvers im Zentrum des Hohlraums geringer als am Ende des Hohlraums.\n\n\n\nInsbesondere bei dem konventionellen statischen Magnetfeld-Pressverfahren wird das ausrichtende Magnetfeld bereits in einer frühen Stufe des\n\n\n\nKompaktier- und Pressverfahrens angelegt (wobei das Pulver noch eine geringe Dichte hat, sodass es sich frei innerhalb des Hohlraums bewegen\n\n\n\nkann) und deshalb wird das Pulver innerhalb des Hohlraums leicht ungleichförmig verteilt. In diesem Fall muss das Pulver, das sich in Richtung auf\n\n\n\ndas Ende des Hohlraums angesammelt hat, gepresst und in Richtung auf das Zentrum des Hohlraums verschoben werden, wenn der obere Stempel\n\n\n\nabgesenkt wird, um das Pulver zu pressen. Inzwischen sind die Orientierungsrichtungen an beiden Enden des Hohlraums gestört. Aus diesen Gründen\n\n\n\nwerden bei dem senkrechten Pressverfahren, das mit den Jochelementen durchgeführt werden soll, der Grad der Ausrichtung und die Dichte des\n\n\n\nresultierenden Pulver-Presslings leicht ungleichförmig und die Gleichförmigkeit der magnetischen Eigenschaften wird übermäßig stark beeinträchtigt.\n\n\n\nWenn die Jochelemente in der Nähe des Hohlraums vorgesehen sind, konzentriert sich außerdem der Magnetfluss, er hat jedoch die Neigung, leicht\n\n\n\ngekrümmt zu sein.\n\n\n\n\n\n[0017] Um die vorstehenden Probleme zu überwinden, besteht ein Ziel der vorliegende Erfindung darin, ein Verfahren zum Verdichten bzw. Pressen\n\n\n\neines Seltenerdmetall-Legierungspulvers bereitzustellen, um so einen Sintermagneten mit gleichförmigen magnetischen Eigenschaften herzustellen.\n\n\n\nBeschreibung der Erfindung\n\n\n\n\n\n[0018] Bei dem erfindungsgemäßen Seltenerdmetall-Legierungspulver-Pressverfahren handelt es sich um ein Verfahren zum Verdichten bzw.\n\n\n\nPressen eines Seltenerdmetall-Legierungspulvers unter Verwendung einer Pressform. Die Pressform besteht aus einem nicht-magnetischen\n\n\n\nMaterial und weist eine Pressform-Öffnung und ein Paar Jochelemente auf. Die Pressform-Öffnung definiert einen Hohlraum und die Jochelemente\n\n\n\nsind auf den rechten und linken Seiten der Pressform-Öffnung vorgesehen. Das Verfahren umfasst die folgenden Stufen: Bereitstellung des\n\n\n\nSeltenerdmetall-Legierungspulvers; Füllen des Hohlraums der Pressform mit dem Seltenerdmetall-Legierungspulver; und Pressen des Seltenerdmetall-\n\n\n\nLegierungspulvers, das in den Hohlraum eingeführt worden ist, zwischen einem Paar von Stempel-Oberflächen, die einander gegenüberliegend\n\n\n\nangeordnet sind. Ein Impuls-Magnetfeld, das im Wesentlichen senkrecht zu der Pressrichtung verläuft, wird erst angelegt, wenn die scheinbare Dichte\n\n\n\ndes Seltenerdmetall-Legierungspulvers in dem Hohlraum einen vorgegebenen Wert erreicht hat, der mindestens 47 % der wahren Dichte des Pulvers\n\n\n\nentspricht, während die Pressstufe durchgeführt wird.\n\n\n\n\n\n[0019] Das Verfahren umfasst vorzugsweise außerdem eine Stufe zur Erzeugung von Vibrationen in dem Seltenerdmetall-Legierungspulver, während\n\n\n\ndie Pressstufe durchgeführt wird und bevor das Impuls-Magnetfeld angelegt wird.\n\n\n\n\n\n[0020] Bei einer bevorzugten Ausführungsform ist der vorgegebene Wert festgelegt auf 3,55 g/cm3 oder höher.\n\n\n\n\n\n\n\n[0021] Bei einer anderen bevorzugten Ausführungsform ist das Impuls-Magnetfeld ein abnehmendes Wechselfeld.\n\n\n\n\n\n[0022] Bei einer anderen bevorzugten Ausführungsform ist das Impuls-Magnetfeld ein inverses Impuls-Magnetfeld.\n\n\n\n\n\n[0023] Bei einer weiteren bevorzugten Ausführungsform werden die Vibrationen von mindestens einer der beiden Stempel-Oberflächen übertragen.\n\n\n\n\n\n[0024] Bei noch einer weiteren bevorzugten Ausführungsform wird das Seltenerdmetall-Legierungspulver unter Anwendung eines\n\n\n\nSchnellabkühlungsverfahrens hergestellt.\n\n\n\n\n\n[0025] Ein erfindungsgemäßes Verfahren zur Herstellung eines Sinterkörpers aus einer Seltenerdmetall-Legierung umfasst die folgenden Stufen:\n\n\n\nHerstellung eines Presslings aus dem Seltenerdmetall-Legierungspulver nach einem der vorstehend beschriebenen Verfahren und Sintern des\n\n\n\nPresslings.\n\n\n\nKurze Beschreibung der Zeichnungen\n\n\n\n\n\n[0026] Fig. 1(a) zeigt in Form einer schematischen Darstellung einen Bogenmagneten und\n\n\n\n\n\n[0027] Fig. 1(b) zeigt in Form einer schematischen Darstellung einen Sinterblock, der zu dem Bogenmagneten verarbeitet werden soll;\n\n\n\n\n\n[0028] Fig. 2 zeigt in Form einer schematischen Darstellung eine Konfiguration für eine Press-Vorrichtung, die vorteilhaft in einem Verdichtungs-\n\n\n\nbzw. Pressverfahren gemäß einer bevorzugten Ausführungsform der vorliegenden Erfindung verwendet werden kann;\n\n\n\n\n\n[0029] Fig. 3 zeigt in Form einer perspektivischen Ansicht eine beispielhafte Konfiguration für eine Pressform für die Verwendung in dem\n\n\n\nVerdichtungs- bzw. Pressverfahren gemäß der bevorzugten Ausführungsform der vorliegenden Erfindung;\n\n\n\n\n\n[0030] Fig. 4(a) zeigt in schematischer Darstellung den Zustand von Pulverteilchen, bei dem Vibrationen bereits in dem erfindungsgemäßen\n\n\n\nVerdichtungs- bzw. Pressverfahren erzeugt worden sind, während\n\n\n\n\n\n[0031] Fig. 4(b) in schematischer Form den Zustand von Pulverteilchen zeigt, bei dem noch keine Vibrationen erzeugt worden sind.\n\n\n\nBeste Art der Durchführung der Erfindung\n\n\n\n\n\n[0032] Erfindungsgemäß wird ein Magnetpulver gepresst und verdichtet mit einer Pressform, die aus einem nicht-magnetischen Material hergestellt\n\n\n\nist. Die Pressform für die erfindungsgemäße Verwendung weist eine Formöffnung, die einen Hohlraum definiert, und eine Vielzahl von Jochelementen,\n\n\n\ndie an den rechten und linken Seiten der Form-Öffnung vorgesehen sind.\n\n\n\n\n\n[0033] Die Erfinder der vorliegenden Erfindung haben gefunden und durch Versuche bestätigt, dass dann, wenn ein Impuls-Magnetfeld (pulsierendes\n\n\n\nMagnetfeld) senkrecht zu der Pressrichtung zu Ausrichtungszwecken angelegt wird, ein Pressling mit einem hohen Ausrichtungsgrad in einer\n\n\n\nguten Ausbeute erhalten werden kann durch Hinauszögern des Anlegens eines solchen Impuls-Magnetfeldes, bis die scheinbare Dichte des\n\n\n\nLegierungspulvers (die hier auch als \"gepresste Pulverdichte (oder Gründichte)\" bezeichnet wird) einen vorgegebenen Wert erreicht hat.\n\n\n\n\n\n[0034] Nach den Ergebnissen von Versuchen, die von den Erfindern der vorliegenden Erfindung durchgeführt wurden, entsteht dann, wenn\n\n\n\ndas Impuls-Magnetfeld angelegt wird, während das Pulver, das gepresst wird, noch eine verhältnismäßig niedrige Dichte hat, um die jeweiligen\n\n\n\nPulverteilchen herum ein großer Hohlraum, wobei eine verhältnismäßig geringe Kraft angewendet wird, um die Pulverteilchen miteinander in Kontakt zu\n\n\n\nbringen, und die Pulverteilchen werden in Richtung des angelegten Magnetfeldes leicht ausgerichtet. In diesem Fall wird das Pulver in der Pressform-\n\n\n\nÖffnung in Richtung auf die Jochelemente angezogen. Als Folge davon ist ein Phänomen zu beobachten, bei dem die Dichte am Ende höher wird als\n\n\n\nim Zentrum der Pressformöffnung. Danach wird das zu verdichtende Pulver weiter gepresst und seine Dichte nimmt allmählich zu. Dann fließt dasPulver, wobei es die Orientierungsrichtungen stört. Infolgedessen weisen die Pulverteilchen des resultierenden Grünpresslings (Vorpresslings) einen\n\nverminderten Grad der Ausrichtung auf.\n\n\n\n\n\n[0035] Um dieses Problem zu überwinden, wird erfindungsgemäß das Impuls-Magnetfeld (pulsierende Magnetfeld) erst angelegt, wenn die Dichte\n\n\n\ndes zu pressenden Pulvers einen vorgegebenen Wert erreicht hat, der mindestens 47 % der wahren Dichte desselben beträgt. Durch Hinauszögern\n\n\n\ndes Anlegens des Impuls-Magnetfeldes, bis die Dichte des gepressten Pulvers einen bestimmten Wert erreicht hat, fließt das Pulver nicht so leicht und\n\n\n\nseine Orientierungsrichtungen werden nicht so stark gestört während der nachfolgenden Press- und Verdichtungsstufe.\n\n\n\n\n\n[0036] Wenn andererseits das zu pressende Pulver eine übermäßig hohe Dichte aufweist, wenn das Impuls-Magnetfeld angelegt wird, bleibt ein zu\n\n\n\ngeringer Raum um die jeweiligen Pulverteilchen herum bestehen, und die Pulverteilchen stehen in einem zu engen Kontakt miteinander, sodass die\n\n\n\nPulverteilchen ihre\n\n\n\n\n\nAusrichtungen unter dem Einfluss des angelegten Impuls-Magnetfeldes nicht verändern können. Auf diese Weise ist es dann, wenn die gepresste\n\n\n\nPulverdichte so stark zunimmt, dass sie einen vorgegebenen Wert übersteigt, schwierig, einen Magneten mit ausgezeichneten magnetischen\n\n\n\nEigenschaften zu erhalten, selbst wenn ein starkes Impuls-Magnetfeld angelegt wird. Aus diesem Grund beträgt dann, wenn damit begonnen wird, das\n\n\n\nImpuls-Magnetfeld anzulegen, die Dichte des zu pressenden Pulvers vorzugsweise höchstens 53 % seiner wahren Dichte.\n\n\n\n\n\n[0037] Es sei darauf hingewiesen, dass selbst bei der gleichen gepressten Pulverdichte der Reibungswiderstand zwischen den Legierungspulver-\n\n\n\nTeilchen noch verringert werden kann durch Erzeugung von Vibrationen darin. Daher wird das ausrichtende Magnetfeld vorzugsweise angelegt,\n\n\n\nwährend das Legierungspulver Vibrationen ausgesetzt wird. Wenn das Legierungspulver während der Kompressions/Verdichtungs-Verfahrensstufe in\n\n\n\nVibrationen versetzt wird, dann können sich die Pulverteilchen bei angelegtem Magnetfeld auch dann ausreichend ausrichten, nachdem die gepresste\n\n\n\nPulverdichte einen hohen Wert erreicht hat.\n\n\n\n\n\n[0038] Ferner kann selbst bei der gleichen gepressten Pulverdichte der Reibungswiderstand zwischen den Legierungspulver-Teilchen noch verringert\n\n\n\nwerden durch Anlegen eines abnehmenden Wechselfeldes. In diesem Fall können sich die Pulverteilchen noch genügend ausrichten bei angelegtem\n\n\n\nMagnetfeld, selbst nachdem die gepresste Pulverdichte einen eher hohen Wert erreicht hat.\n\n\n\n\n\n[0039] Nachstehend werden bevorzugte Ausführungsformen eines Verfahrens zur Herstellung eines Seltenerdmetall-Legierungs-Sinterkörpers\n\n\n\ngemäß der vorliegenden Erfindung unter Bezugnahme auf die beiliegenden Zeichnungen näher beschrieben.\n\n\n\n\n\n[0040] Zuerst wird ein Seltenerdmetall-Legierungspulver für die Verwendung in dieser bevorzugten Ausführungsform beschrieben. Erfindungsgemäß\n\n\n\nkönnen verschiedene Seltenerdmetall-Legierungspulver verwendet werden. Unter anderen ist eine Seltenerdmetall-Legierung auf R-Fe-B-Basis\n\n\n\nbesonders bevorzugt. Zusammensetzungen und Verfahren zur Herstellung von bevorzugte Seltenerdmetall-Legierungen auf R-Fe-B-Basis sind\n\n\n\nbeispielsweise in den US-Patenten Nr. 4 770 723 und 4 792 368 beschrieben.\n\n\n\n\n\n[0041] In einer Seltenerdmetall-Legierung auf R-Fe-B-Basis mit einer typischen Zusammensetzung wird häufig Nd oder Pr als R (Seltenerdmetall)\n\n\n\nverwendet, wobei ein Teil des Fe durch ein Übergangselement (z.B. Co) und ein Teil des B durch C ersetzt sein können.\n\n\n\n\n\n[0042] Bei dieser bevorzugten Ausführungsform wird vorzugsweise ein Pulver mit einer mittleren Teilchengröße von 1,5 bis 6 &mgr;m,\n\n\n\nhergestellt durch Pulverisieren einer erstarrten Legierung auf Nd-Fe-B-Basis (mit einer Dichte von 7,5 g/cm3), die unter Anwendung eines\n\n\n\nSchnellabkühlungsverfahrens hergestellt worden ist, verwendet. Die Oberfläche des Legierungspulvers ist vorzugsweise mit einem Gleit- bzw.\n\n\n\nSchmiermittel, wie z.B. Zinkstearat, beschichtet. Insbesondere kann das Legierungspulver auf die folgende Weise hergestellt werden: zuerst wird\n\n\n\neine Legierung mit einer Zusammensetzung, die 30 Massenprozent Nd, 1,0 Massenprozent B, 1,2 Massenprozent Dy, 0,2 Massenprozent Al, 0,9\n\n\n\nMassenprozent Co und Fe und unvermeidliche Verunreinigungen als Rest enthält, durch Anwendung eines Induktionsschmelzverfahrens geschmolzen\n\n\n\nzur Herstellung einer geschmolzenen Legierung. Die geschmolzene Legierung wird durch Anwendung des Bandgießverfahrens, wie es in dem\n\n\n\nUS-Patent Nr. 5 383 978 beschrieben ist, verfestigt, wodurch ein Legierungblock erhalten wird. Der resultierende Legierungblock wird durch ein\n\n\n\nWasserstoffeinschluss-Verfahren grob pulverisiert und dann mit einer Strahlmühle fein pulverisiert, wobei man ein Legierungspulver mit einer mittleren\n\n\n\nTeilchengröße von 3,5 &mgr;m (enthaltend 0,3 Massenprozent Zinkstearat als Schmiermittel) erhält.\n\n\n\n\n\n[0043] Danach wird dieses Pulver gepresst und verdichtet mit einer Pressvorrichtung. Nachstehend wird der Aufbau einer Pressvorrichtung, wie sie\n\n\n\nvorzugsweise bei dieser Ausführungsform der Erfindung verwendet wird, unter Bezugnahme auf die Fig. 2 beschrieben.\n\n\n\n\n\n[0044] Die Press/Verdichtungs-Vorrichtung 10  , wie sie in Fig. 2 dargestellt ist, umfasst eine Basisplatte 12  , die von einer Vielzahl von Füßen 14 \n\n\n\ngetragen wird. Eine Pressform 16  ist oberhalb der Basisplatte 12  angeordnet. Die untere Oberfläche der Pressform 16  steht mit einer Kupplungsplatte\n\n\n\n20  über ein Paar von Führungsstegen 18  , die sich durch die Basisplatte 12  hindurch erstrecken, in Verbindung. Die Kupplungsplatte 20  steht mit\n\n\n\neinem unteren hydraulischen Zylinder (nicht dargestellt) über einen Zylinderstab 22  in Verbindung. Auf diese Weise kann die Pressform 16  durch den\n\n\n\nunteren hydraulischen Zylinder vertikal bewegt werden.\n\n\n\n\n\n[0045] Eine Pressformöffnung (Durchgangsöffnung) 24  ist etwa im Zentrum der Pressform 16  vorgesehen, die sich senkrecht durch die Pressform\n\n\n\nhindurch erstreckt. Ein unterer Stempel 26  wird von unten nach oben in die Pressformöffnung 24  eingeführt, wodurch ein Hohlraum 28  im Innern der\n\n\n\nPressformöffnung 24  definiert wird.\n\n\n\n\n\n[0046] Wie in der Fig. 3 dargestellt, umfasst die Pressform 16  ein Paar Jochelemente 16a  und 16b  , die einander gegenüberliegend angeordnet\n\n\n\nsind, so\n\n\n\n\n\ndass sie sandwichartig die Pressformöffnung 24  zwischen sich begrenzen in einer Richtung, in der das ausrichtende Magnetfeld angelegt wird (d.h.\n\n\n\nin der X-Richtung). Die Jochelemente 16a  und 16b  bestehen aus einem Material mit einer hohen Permeabilität, beispielsweise aus Kohlenstoffstahl\n\n\n\n(z.B. Permendur). Um die Produktivität zu erhöhen, sollte die durch Wirbelströme erzeugte Wärme minimiert werden und die Orientierungsrichtungen\n\n\n\nmüssen dennoch während des Pressverfahrens ausgerichtet werden. Um diese Zwecke gleichzeitig zu erzielen, wird vorzugsweise ein Material mit\n\n\n\neiner niedrigen Sättigungsflussdichte Bs verwendet. Andererseits besteht die Pressform 16  aus einem nicht-magnetischen Material. Die Seiten-\n\n\n\nOberflächen der Pressform 16  weisen Ausnehmungen für die Aufnahme der Jochelemente 16a  und 16b  auf. Der hier verwendete Ausdruck \"nicht-\n\n\n\nmagnetisches Material\" bezieht sich auf ein Material mit einer Sättigungsmagnetisierung von 0,2 Tesla (T) oder weniger.\n\n\n\n\n\n[0047] Wie ebenfalls in der Fig. 3 dargestellt, ist die Länge 16c  der Jochelemente so definiert, dass sie mindestens gleich ist der oder größer ist (bis\n\n\n\nzu 120 %) als die Länge 24a  des Hohlraums zwischen den Jochelementen. Durch Anwendung einer solchen Größenrelation können die Richtungen\n\n\n\nder Linien des Magnetflusses weiter ausgerichtet werden.\n\n\n\n\n\n[0048] In der Fig. 2 ist der untere Stempel 26  auf einem Vibrator 30  vorgesehen, der seinerseits auf der Pressformplatte 12  angeordnet ist.\n\n\n\nDer untere Stempel 26  ist somit auf der Basisplatte 12  fixiert, er kann jedoch durch den Vibrator 30  in vertikaler Richtung, d.h. parallel zu der\n\n\n\nPressrichtung, in Vibrationen versetzt werden. Als Vibrator 30  kann beispielsweise ein Vibrator, wie er von der Firma Daiichi Corp. hergestellt wird,\n\n\n\nverwendet werden.\n\n\n\n[0049] Oberhalb der Pressform 16  ist eine obere Stempelplatte 32  vorgesehen. Ein oberer Stempel 34  ist auf der unteren Oberfläche der oberen\n\nStempelplatte 32  so angeordnet, dass er in den Hohlraum 28  eingeführt werden kann. Auf der oberen Oberfläche der oberen Stempelplatte 32 \n\nist ein Zylinderstab 36  vorgesehen. Ein oberer hydraulischer Zylinder (nicht dargestellt) steht mit dem Zylinderstab 36  in Verbindung. Ein Paar von\n\nFührungsstreben (38  ), die sich in senkrechter Richtung erstrecken, wird in die obere Stempelplatte 32  um die rechten und linken Ränder derselben\n\nherum eingeführt und ihre Böden stehen mit der oberen Oberfläche der Pressform 16  in Verbindung.\n\n\n\n\n\n[0050] Die obere Stempelplatte 32  kann durch den oberen hydraulischen Zylinder, der durch die Führungsstreben 38  geführt wird, in vertikaler\n\n\n\nRichtung verschoben werden. Als Folge davon kann auch der obere Stempel 34  in vertikaler Richtung verschoben und in den Hohlraum 28  eingeführt\n\n\n\nwerden.\n\n\n\n\n\n[0051] Bei der Durchführung des Press/Verdichtungs-Verfahrens wird ein gegebenes Pulver durch die unteren und oberen Stempel 26  und 34 \n\n\n\ninnerhalb des Hohlraums 28  gepresst (verdichtet), wodurch ein Pressling entsteht.\n\n\n\n\n\n[0052] In der Nähe der Pressform 16  ist ein Magnetfeld-Generator 40  vorgesehen, um die Orientierungsrichtungen des Pulvers in dem Hohlraum 28\n\n\n\n  auszurichten. Der Magnetfeld-Generator 40  umfasst ein Paar Jochelemente 42a  und 42b  , die einander gegenüberliegend so angeordnet sind, dass\n\n\n\nsie sandwichartig die Pressform 16  dazwischen umschließen. Wie die Jochelemente 16a  und 16b  der Pressform 16  bestehen auch die Jochelemente\n\n\n\n42a  und 42b  aus einem Material mit einer hohen Permeabilität, wie z.B. Kohlenstoffstahl. Um die Jochelemente 42a  und 42b  sind jeweils Spulen\n\n\n\n44a  und 44b  herumgewickelt. Wenn Ströme durch diese Spulen geschickt werden, entsteht in der durch den Pfeil X angezeigten Richtung ein\n\n\n\nImpuls-Magnetfeld (pulsierendes Magnetfeld), wodurch die Orientierungsrichtungen des Pulvers in dem Hohlraum 28  ausgerichtet werden. Der hier\n\n\n\nverwendete Ausdruck \"Impuls-Magnetfeld\" bezieht sich sich auf ein Magnetfeld, dessen Stärke höchstens 0,2 Sekunden lang 90 % oder mehr seines\n\n\n\nSpitzenwertes beträgt.\n\n\n\n\n\n[0053] In dieser Pressvorrichtung 10  verläuft die Pressrichtung senkrecht zur Richtung des ausrichtenden Magnetfeldes und das angelegte\n\n\n\nMagnetfeld kann beispielsweise im Zentrum des Hohlraum eine Stärke von 3 T aufweisen.\n\n\n\n\n\n[0054] Die in der Fig. 2 dargestellte Pressvorrichtung 10  ist eine Pressvorrichtung vom Auszieh-Typ, in der die Pressform 16  sich nach oben und\n\n\n\nnach unten bewegen kann. Alternativ kann auch eine Pressvorrichtung vom Doppelhub-Typ verwendet werden, bei der beide oberen und unteren\n\n\n\nStempel 34  und 26  bewegt werden können.\n\n\n\n\n\n[0055] Wie in der Fig. 2 dargestellt, ist der Hohlraum 24  begrenzt durch die Pressform-Öffnung 28  der Pressform 16  und die obere Oberfläche (d.h.\n\n\n\ndie Press-Oberfläche) des unteren Stempels 26  und dann wird er mit dem vorstehend beschriebenen Legierungspulver gefüllt.\n\n\n\n\n\n[0056] Das Legierungspulver kann nach irgendeinem der verschiedenen bekannten Verfahren eingeführt werden. Beispielsweise ist ein Verfahren\n\n\n\nzum Füllen des Hohlraums mit dem Legierungspulver in einer Beschickungsbox durch Ausnutzung des Gewichtes des Legierungspulvers selbst ein\n\n\n\neinfaches und bevorzugtes Verfahren. Bei diesem Verfahren kann der Hohlraum mit dem Legierungspulver in einer geeigneten scheinbaren Dichte (von\n\n\n\nbeispielsweise 1,7 bis 2,5 g/cm3) gefüllt werden. Nachdem der Hohlraum mit dem Legierungspulver gefüllt worden\n\n\n\n\n\nist, kann man einen Abstreifstab entlang der Oberfläche der Pressform 16  gleiten lassen, sodass die Menge des Legierungspulvers in dem Hohlraum\n\n\n\n28  im Wesentlichen konstant gehalten werden kann. Beispielsweise kann das in der offengelegten japanischen Patentpublikation Nr. 2001-9595\n\n\n\nbeschriebene Pulver-Zuführungsverfahren angewendet werden.\n\n\n\n\n\n[0057] Danach wird durch Bewegen des oberen Stempels 34  un', '压制稀土合金粉末的方法和方法本发明涉及压制稀土合金粉末的方法和方法\n\n生产稀土金属合金的烧结体。\n\n\n\n\n\n稀土合金烧结磁铁（永磁铁）通常通过压制（压制）粉末来制造\n\n从稀土合金中烧结所得粉末压块，然后进行时效处理\n\n烧结体。目前广泛用于各种应用的永磁体包括磁体\n\n稀土钴基和稀土铁硼基磁铁。除此之外，磁铁基于稀土铁\n\n基于硼的（以下称为“R-Fe-B基磁体”，其中R代表包括Y，Fe的稀土元素之一）\n\nB代表硼）越来越多地用于各种电子设备中。这是因为R-Fe上的磁铁\n\nB基座的最大能量积高于任何其他类型的磁铁，并且他仍然如此\n\n相对便宜。\n\n\n\n\n\nR-Fe-B基烧结磁体包含主要由四方R2Fe14B化合物组成的主相，a\n\n富R相含有例如Nd和富B相。在R-Fe-B基烧结磁体中，可以通过一部分Fe\n\n可以替换诸如Co或Ni的过渡金属，并且可以用碳（C）代替部分硼（B）。一种基于R-Fe-B的烧结磁体\n\n例如，美国专利No.4,770,723和4,792,368教导了本发明适用于成功。\n\n\n\n\n\n根据现有技术，迄今为止，在块之后使用R-Fe-B基合金作为这种磁体的材料。\n\n铸造生产。在块状铸造过程中，通常是稀土金属，电解铁和铝\n\n通过应用感应加热方法将铁硼合金熔化为各自的起始材料，然后将其熔化\n\n在模具中获得的这种熔体相对缓慢地冷却，由此获得合金锭。\n\n\n\n最近，诸如带铸法或离心铸造法的快速冷却方法有很多\n\n注意到了。在快速冷却过程中，熔融合金具有单个淬火辊，a\n\n双淬火辊，旋转盘或旋转圆柱形模具的内表面接触\n\n并且相对快速地冷却，由此熔融合金变成变薄的凝固合金\n\n是一种合金块。这样制备的凝固合金在下文中称为“合金薄片”。通过\n\n使用这种快速冷却方法形成的合金薄片通常具有约0.03至约10mm的厚度。\n\n在快速冷却过程中，熔融合金从其表面开始，与淬火辊的表面一起开始\n\n已经接触，巩固。熔融合金的这个表面在这里称为“滚子接触”\n\n在快速冷却过程中，柱状晶体因此从厚度方向开始生长\n\n滚子接触面。因此，通过使用带式浇铸方法或生产的快速凝固合金\n\n已经制备了另一种快速冷却方法，该结构具有结晶的R2Fe14B相和富R相。\n\n结晶R2Fe14B相通常具有尺寸为约0.1至约100μm的短轴和尺寸的长轴\n\n约5至约500微米。另一方面，作为非磁性相的富R相是一种元素\n\n含有相对高浓度的稀土R和厚度（对应于晶界的宽度）约为10\n\n在结晶R2Fe14B相之间的晶界处分散的μm或更少。\n\n\n\n\n\n与通过传统的铸锭模塑或模塑工艺生产的合金相比（a\n\n\n\n这种合金在下文中称为“块状合金”），快速凝固的合金在更短的时间内变得更短\n\n\n\n淬火（即，以102℃/ s至104℃/ s的冷却速率）。因此，快速凝固的合金具有更精细的结构\n\n\n\n（晶粒结构）和较小的晶粒尺寸。另外，在快速凝固的合金中，晶界包括较大的晶界\n\n区域和富R相在晶界上宽且薄地分散。因此，快速凝固的合金也具有良好的性能\n\n\n\n富R相的分散性。由于快速凝固的合金具有上述有利特征，因此可以\n\n\n\n该\n\n\n\n\n\n快速凝固的合金可以生产出具有优异磁性的磁铁。\n\n\n\n\n\n[0007]称为“Ca还原（或还原（扩散））”方法的替代合金化方法，\n\n\n\n从现有技术中也已知道。该过程包括以下处理和制造阶段：添加\n\n\n\n金属钙（Ca）和氯化钙（CaCl）或者是至少一种稀土金属氧化物，铁粉，纯的混合物\n\n\n\n硼粉末和硼铁粉末或氧化硼以预定比例或含有合金粉末或混合物的混合物\n\n\n\n以预定比例包含这些组成元素的氧化物;在惰性气体中进行还原/扩散处理\n\n\n\n产生混合物的气氛;稀释所得反应物以制成浆液;以及随后的\n\n用水处理浆料。以这种方式，可以获得R-Fe-B基合金的固体（模塑制品）。\n\n\n\n\n\n应注意，下面将小块固体合金称为“合金块”。\n\n\n\n“合金块”可以具有各种形式的固体合金，不仅包括由其制造的固化合金\n\n\n\n已经制备了合金材料熔体的冷却（例如，根据传统的合金块）\n\n\n\nBlockgießverfahren已经准备好，或者是合金薄片，使用Schnellkkühlungsverfahrens，例如\n\n\n\n带状铸造法），还包括通过Ca还原法制备的固态合金\n\n\n\n是。\n\n\n\n\n\n通过进行以下处理步骤获得待压制的合金粉末：粗粉碎\n\n\n\n这些形式之一的合金块使用例如氢吸留方法和/或在应用中\n\n\n\n各种机械研磨工艺（例如使用圆盘磨机）;并精细粉碎所得到的\n\n粗粉末（平均粒径为10-500μm）通过使用干磨方法，例如，在下面\n\n\n\n使用喷射磨机。\n\n\n\n\n\n待压制（压实）的R-Fe-B基合金粉末的平均粒径优选为1.5\n\n\n\n至约6微米以获得足够的磁性。应该注意，这里使用的术语\n\n\n\n除非另有说明，粉末的“平均粒度”是指质量中值直径（MMD）。但是，如果\n\n\n\n使用具有如此小的平均粒径的粉末，得到的流动性，成型性（包括\n\n\n\n腔体填充密度和压力）和生产率差。\n\n\n\n\n\n通过使用快速冷却方法获得的粉末，例如，带式浇铸方法（在a\n\n\n\n已经制备了102至104℃/ s的冷却速率，特别是具有更小的平均粒度和更窄的冷却速率\n\n\n\n作为粉末的粒度分布，其使用块铸法制备。首先提到的粉末有\n\n因此，流动性明显比最后提到的粉末差。因此，粉末量的变化，\n\n\n\n要填充在模腔中，超过腔内的允许范围或填充密度\n\n\n\n会变得不均匀结果，可以允许所得到的压块的质量或尺寸的变化\n\n\n\n范围或颗粒可能破裂或破碎。另外，在这种情况下，紧凑的磁化方向\n\n\n\n通过引导磁场没有充分地对准，并且所得到的烧结磁体具有差的磁性\n\n\n\n（例如，就其剩磁而言）。\n\n\n\n\n\n根据施加导向磁场的方向，采用压制和压实的方法进行生产\n\n\n\n用于磁体的线圈大致细分为两种类型：平行压制方法，其中对准磁场平行于压力机\n\n\n\n应用（或压缩）方向，并采用垂直（垂直）压制方法，其中对准磁场垂直于\n\n按下方向。\n\n\n\n\n\n在下文中，将参考用于制造片状磁体的压块的压制和压制方法\n\n\n\n图1（a）和图1（b）更详细地描述了图1（a）和图1（b）。在图1（a）和1（b）中，箭头B表示对准磁场的方向\n\n\n\n在压制过程中创造。\n\n\n\n\n\n为了提高生产率和磁性能，得到图1（a）所示的片状磁铁1a，\n\n\n\n首先制备图1（b）所示的烧结块1b然后切割。在现有技术中，是一种紧凑型的\n\n\n\n烧结块1b verar\n\n\n\n\n\n通过垂直（垂直）压制工艺加工。这样做的原因是它的垂直压制过程\n\n\n\n允许压实和压实给定的粉末而不会干扰其磁场取向。因此，磁铁指向后\n\n\n\n通过垂直压制方法生产的磁性通常比通过平行压制方法生产的磁体具有更好的磁性。\n\n\n\n\n\n同时，轭元件通常设置在模具开口附近，模具开口在模具中形成空腔\n\n定义非磁性材料，由此磁通量集中在腔体内部和强度\n\n\n\n对准磁场的增加。轭元件通常距离模口的内壁15厘米，\n\n\n\n提供了在排列方向上测量的。使用这种布置是因为所得磁体的剩磁Br\n\n\n\n腔内对准磁场的强度越高，越高。如果这样的方法增加力量\n\n\n\n使用具有上述垂直的轭元件的腔内的对准磁场\n\n\n\n将压制方法组合，然后可以获得具有更好性能的永磁体。\n\n\n\n\n\n近年来，经常使用粒径为6μm或更小（FSSS粒度）的细粉末来获得\n\n\n\n减少烧结磁体的晶粒尺寸。为了对准这种细粉末颗粒，必须具有比传统的更强的磁场\n\n\n\n被创造。然而，当通过使用轭构件增加模腔中的磁场强度时\n\n模腔内的磁场强度呈非均匀分布，其中磁场强度方向为\n\n\n\n在对准方向上的腔的端部增加。这样的磁场强烈地吸引腔中的磁粉朝向\n\n\n\n轭元素。结果，空腔中心的磁粉的表观密度变得小于空腔末端的表观密度。\n\n\n\n特别是，在传统的静磁场压制方法中，对准磁场已经处于早期阶段\n\n\n\n采用压实和压制工艺（粉末仍然具有低密度，因此它们在腔内自由移动\n\n\n\n因此，粉末很容易在腔内不均匀地分布。在这种情况下，粉末是在方向上\n\n\n\n当上冲头时，腔的末端已经累积，压迫并朝向腔的中心移动\n\n\n\n降低压粉。同时，扰乱了腔体两端的取向方向。出于这些原因\n\n\n\n在用轭元件进行的垂直压制方法中，对准度和密度\n\n由此产生的粉末致密性略微不均匀，并且磁性能的均匀性受到过度损害。\n\n\n\n另外，当磁轭构件设置在空腔附近时，磁通量集中，但是趋于变轻\n\n\n\n弯曲的。\n\n\n\n\n\n为了克服上述问题，本发明的一个目的是提供一种压实方法\n\n\n\n稀土合金粉末的制造方法是制造具有均匀磁性的烧结磁铁。\n\n\n\n发明描述\n\n\n\n\n\n根据本发明的稀土合金粉末压制方法是用于压实或压实的方法\n\n\n\n使用模具压制稀土合金粉末。模具由非磁性制成\n\n\n\n材料并具有模具开口和一对轭元件。模口限定腔和轭元件\n\n\n\n在模具开口的右侧和左侧提供。该方法包括以下步骤：提供\n\n\n\n稀土合金粉末;用稀土合金粉末填充模具的腔体;并按下稀土金属\n\n已经被引入空腔中的合金粉末，位于彼此面对的一对印模表面之间\n\n\n\n安排。直到表观密度，才施加基本垂直于按压方向的脉冲磁场\n\n\n\n空腔中稀土合金粉末的含量达到预定值，该值至少为粉末真密度的47％\n\n\n\n在执行按压步骤时对应。\n\n\n\n\n\n该方法优选地还包括在稀土合金粉末中产生振动的步骤\n\n\n\n在施加脉冲磁场之前执行按压步骤。\n\n\n\n\n\n在优选的实施方案中，预定值设定为3.55g / cm 3或更高。\n\n\n\n\n\n\n\n在另一个优选实施例中，脉冲磁场是减小的交变场。\n\n\n\n\n\n在另一个优选实施例中，脉冲磁场是反向脉冲磁场。\n\n\n\n\n\n在另一优选实施例中，传递两个印模表面中的至少一个的振动。\n\n\n\n\n\n在另一个优选的实施方案中，使用a生产稀土合金粉末\n\n产生快速冷却过程。\n\n\n\n\n\n用于制造稀土金属合金烧结体的本发明方法包括以下步骤：\n\n\n\n根据上述方法之一制备稀土合金粉末的压块并烧结\n\n\n\n紧凑。\n\n\n\n附图简要说明\n\n\n\n\n\n图1（a）以片状磁铁的示意图的形式示出\n\n\n\n\n\n图1（b）是表示加工成片状磁铁的烧结块的示意图。\n\n\n\n\n\n图2以示意图的形式示出了用于压制装置的构造，该压制装置有利地用在压缩装置中。\n\n\n\n或者可以使用根据本发明优选实施例的压制方法;\n\n\n\n\n\n图3是用于本发明的模具的示例性构造的透视图\n\n\n\n根据本发明优选实施例的压缩方法;\n\n\n\n\n\n图4（a）示出了在本发明中已经存在的振动中粉末颗粒状态的示意图\n\n压缩或压制过程已经产生了\n\n\n\n\n\n图4（b）以示意图的形式显示了尚未产生振动的粉末颗粒的状态。\n\n\n\n实施本发明的最佳方式\n\n\n\n\n\n根据本发明，用由非磁性材料制成的模具压制和压实磁粉\n\n\n\n是。根据本发明使用的模具具有限定空腔和多个轭元件的模具开口，\n\n\n\n它们设置在模具开口的右侧和左侧。\n\n\n\n\n\n本发明的发明人通过实验发现并证实了当脉冲磁场（脉冲的）时\n\n\n\n垂直于按压方向施加磁场以用于对准目的，在一个中具有高度对准的压块\n\n\n\n通过延迟施加这样的脉冲磁场直到表观密度可以获得良好的产量\n\n\n\n合金粉末（在本文中也称为“压粉密度（或生坯密度）”）已达到预定值。\n\n\n\n\n\n根据本发明的发明人进行的实验结果出现时\n\n施加脉冲磁场，同时压制的粉末在各自的周围仍然具有相对低的密度\n\n\n\n在大空腔周围的粉末颗粒，其中相对小的力施加到彼此接触的粉末颗粒上\n\n\n\n使粉末颗粒容易沿施加的磁场方向排列。在这种情况下，压模中的粉末\n\n\n\n开口被吸引向轭元件。结果，观察到最终密度变得高于的现象\n\n\n\n在模具开口的中心。此后，进一步压制待压实的粉末并且其密度逐渐增加。然后粉末流动，扰乱了取向方向。结果，所得生坯（预压坯）的粉末颗粒具有一个\n\n降低了对齐程度。\n\n\n\n\n\n为了克服这个问题，根据本发明，仅在密度时施加脉冲磁场（脉动磁场）\n\n\n\n要压制的粉末达到预定值，该值至少是其真密度的47％。通过延迟\n\n\n\n在施加脉冲磁场直到压制粉末的密度达到一定值时，粉末不易流动\n\n在随后的压缩和压缩阶段，他的定向方向不会受到太多干扰。\n\n\n\n\n\n另一方面，如果在施加脉冲磁场时待压制的粉末具有过高的密度，则其保持开启\n\n\n\n各个粉末颗粒周围的空间很小，并且粉末颗粒彼此过于紧密接触，这样就可以了\n\n\n\n粉末颗粒他们的\n\n\n\n\n\n在施加的脉冲磁场的影响下的对准不能改变。这就是按下的时候\n\n\n\n粉末密度增加太多以至于超过预定值，难以找到具有优异磁性的磁体\n\n\n\n即使施加强脉冲磁场也能获得特性。因此，如果开始，那\n\n\n\n待压制粉末的密度优选为其真密度的至多53％。\n\n\n\n\n\n应该注意的是，即使具有相同的压实粉末密度，合金粉末之间的摩擦阻力也是如此\n\n\n\n通过在颗粒中产生振动，仍然可以减少颗粒。因此，优选应用对准磁场，\n\n而合金粉末受到振动。如果合金粉末处于压缩/压缩过程阶段\n\n\n\n添加振动，即使在压制之后，粉末颗粒也足以施加磁场\n\n\n\n粉末密度已达到很高的值。\n\n\n\n\n\n此外，即使在相同的压制粉末密度下，合金粉末颗粒之间的摩擦阻力也可以进一步降低\n\n\n\n通过应用递减的交替场来创建。在这种情况下，粉末颗粒在施加时仍然可以充分对准\n\n\n\n磁场，即使压制粉末密度达到相当高的值。\n\n\n\n\n\n以下，为稀土合金烧结体的制造方法的优选实施方式\n\n\n\n参考附图，根据本发明。\n\n\n\n\n\n首先，将描述用于该优选实施方案的稀土合金粉末。根据本发明的\n\n\n\n例如，可以使用各种稀土合金粉末。其中，R-Fe-B基稀土金属合金\n\n特别优选的。用于制备基于R-Fe-B的优选稀土金属合金的组合物和方法是\n\n\n\n例如，在美国专利No.4,770,723和4,792,368中。\n\n\n\n\n\n在具有典型组成的R-Fe-B基稀土金属合金中，通常使用Nd或Pr作为R（稀土金属）\n\n\n\n其中部分Fe可以被过渡元素（例如Co）取代，B的一部分可以被C代替。\n\n\n\n\n\n在该优选实施方案中，优选平均粒径为1.5-6微米的粉末，\n\n\n\n通过粉碎使用a制备的固化的Nd-Fe-B基合金（密度为7.5g / cm 3）制备的\n\n\n\n已经使用快速冷却过程。合金粉末的表面优选具有滑动或\n\n\n\n润滑剂，例如硬脂酸锌，涂层。特别地，合金粉末可以以下列方式制备：首先\n\n\n\n具有包含30质量％Nd，1.0质量％B，1.2质量％Dy，0.2质量％Al，0.9的组成的合金\n\n\n\n通过质量，Co和Fe以及作为剩余部分的不可避免的杂质通过使用感应熔化方法熔化\n\n用于生产熔融合金。熔融合金是通过如美国专利No.4,522,587中所述的带式浇铸方法制备的\n\n\n\n美国专利5,383,978，从而获得合金锭。得到的合金块用a代替\n\n\n\n粗粉碎氢气封闭法然后用喷射磨机细粉碎，其中合金粉末具有介质\n\n\n\n粒径为3.5μm（含有0.3质量％的硬脂酸锌作为润滑剂）。\n\n\n\n\n\n然后，用压力装置压制该粉末并压实。以下是压制装置的结构\n\n\n\n参考图2描述，优选地，在本发明的该实施例中使用。\n\n\n\n\n\n如图2所示，压制/压实装置10包括底板12，底板12由多个支脚14支撑。\n\n\n\n穿了。模具16设置在基板12上方。模具16的下表面连接到连接板\n\n\n\n通过一对引导腹板18连同图20所示的引导腹板18一起延伸穿过底板12。耦合板20是可用的\n\n下部液压缸（未示出）通过连接的活塞杆22。以这种方式，模具16由\n\n\n\n下部液压缸垂直移动。\n\n\n\n\n\n模具开口（通孔）24大致设置在模具16的中心，垂直地穿过模具延伸\n\n\n\n延伸通过。下冲头26从模具开口24中的底部到顶部插入，由此在内部的空腔28中\n\n\n\n定义压模开口24。\n\n\n\n\n\n如图3所示，模具16包括一对彼此相对设置的轭构件16a和16b\n\n\n\n是的，所以\n\n\n\n\n\n将管芯开口24夹在其间沿着施加对准磁场的方向（即\n\n\n\n在X方向）。磁轭元件16a和16b由高磁导率材料制成，例如碳钢\n\n\n\n（例如，Permendur）。为了提高生产率，应尽量减少涡流产生的热量和方向\n\n\n\n但在压制过程中必须对齐。为了同时实现这些目的，优选使用具有的材料\n\n使用低饱和磁通密度Bs。另一方面，模具16由非磁性材料制成。一边\n\n\n\n模具16的表面具有用于接收轭元件16a和16b的凹槽。 “非”\n\n\n\n“磁性材料”是指饱和磁化强度为0.2特斯拉（T）或更低的材料。\n\n\n\n\n\n还如图3所示，轭元件的长度16c被定义为至少等于或大于（至\n\n\n\n至120％）作为轭元件之间的腔的长度24a。通过应用这种尺寸关系，方向\n\n\n\n磁通线进一步对齐。\n\n\n\n\n\n如图2所示，下冲头26设置在振动器30上，振动器30又设置在模板12上。\n\n\n\n因此，下冲头26固定在底板12上，但是它可以通过振动器30在垂直方向上移动，即，平行于\n\n\n\n按下方向振动。作为振动器30，例如振动器，如Daiichi公司所述。生产，\n\n被使用。\n\n\n\n在模具16上方，设置上冲头板32。上冲头34位于鞋面的下表面上\n\n冲压板32布置成使其可以插入腔28中。在上冲孔板32的上表面上\n\n提供了一个活塞杆36。上液压缸（未示出）与缸杆36连通。几个\n\n沿垂直方向延伸的导杆（38）围绕其左右边缘插入上模板32中\n\n引入并且它们的底部与模具16的上表面连通。\n\n\n\n\n\n上冲孔板32可以通过上液压缸，其由引导支柱38垂直引导\n\n\n\n方向转移。结果，上冲头34也可以在竖直方向上移位并插入腔28中\n\n\n\n是。\n\n\n\n\n\n在进行压制/致密化过程时，给定的粉末通过下冲头26和上冲头34\n\n\n\n压缩（压缩）在腔28内，由此产生压块。\n\n在模具16附近，磁场发生器40设置在腔28中的粉末的取向方向上\n\n\n\n  对齐。磁场发生器40包括一对彼此相对设置的磁轭构件42a和42b\n\n\n\n将模具16夹在其间。与模具16的轭元件16a和16b一样，轭元件也存在\n\n\n\n42a和42b由具有高磁导率的材料制成，例如42a和42b。碳素钢。轭元件42a和42b周围是相应的线圈\n\n\n\n44a和44b缠绕在一起。当电流通过这些线圈时，它们将出现在箭头X所示的方向上。\n\n\n\n脉冲磁场（脉动磁场），由此粉末的取向方向在腔28中对准。这个\n\n\n\n术语“脉冲磁场”是指磁场，其强度为其最大值的90％或更多，持续0.2秒\n\n\n\n峰值。\n\n\n\n\n\n在该按压装置10中，按压方向垂直于对准磁场的方向并被施加\n\n\n\n例如，磁场在腔的中心具有3T的厚度。\n\n图2所示的按压装置10是拉出式按压装置，其中模具16向上和向上\n\n\n\n可以向下移动或者，可以使用双冲程型压制装置，其中上部和下部都是如此\n\n\n\n可以移动印章34和26。\n\n\n\n\n\n如图2所示，腔24由模具16的模口28和顶面限定（即\n\n\n\n下冲头26的压制表面然后填充上述合金粉末。\n\n\n\n\n\n合金粉末可以通过各种已知方法中的任何一种引入。例如，一个程序\n\n\n\n通过利用合金粉末本身的重量，用合金粉末在进料箱中填充空腔\n\n\n\n简单而优选的方法。在该方法中，腔体可以用合适的表观密度（合金粉末）填充合金粉末\n\n\n\n例如，填充1.7至2.5g / cm 3）。在腔体中填充合金粉末后\n\n\n\n\n\n是的，人们可以沿着模具16的表面滑动Abstreifstab，从而使空腔中的合金粉末的量\n\n28可以保持基本恒定。例如，在日本专利公开No.2001-9595中\n\n\n\n可以应用所描述的粉末进料方法。\n\n\n\n\n\n此后，通过上下冲头34和/或下冲头26上下移动合金粉末\n\n\n\n在腔28中单轴压制。通常，上冲头34向下移动。或者，上冲头34和\n\n\n\n下冲头26同时向下或向上移动。\n\n\n\n\n\n在该优选实施例中，在进行单轴压制方法的同时，合金粉末在其中\n\n\n\n腔暴露于28（机械）振动。通过对合金粉末施加振动，桥梁结构，\n\n\n\n它将粉末颗粒破碎在一起，使粉末颗粒容易移动。下面是\n\n\n\n参考图4（a）和4（b），详细描述了桥结构如何被产生的振动破坏。\n\n\n\n\n\n如图4（b）所示，刚刚填充在空腔中的合金粉末定义了桥结构\n\n你让粒子2彼此接触。因此，颗粒2之间的空腔3的总体积\n\n\n\n相对较大的空腔3非均匀分布。通过将合金粉末保持在这种振动状态\n\n\n\n由颗粒2之间的接触形成的桥结构破裂并且不均匀分布\n\n\n\n然后均匀地排列空腔3，如图4（a）所示。结果，空腔3的总体积\n\n\n\n  颗粒2和粉末之间的表观密度增加。由于空腔3围绕空腔3基本均匀\n\n\n\n然后颗粒2能够容易地移动（即，在颗粒中的取向的影响下旋转）\n\n\n\n通过磁场的方向指示）。当然，合金粉末在腔体中的密度分布也变得均匀。\n\n\n\n另外，尽管表观密度保持相同，但合金粉末变得敏捷并且可以与对准的粉末对齐\n\n\n\n在产生振动时比在没有振动时更容易对准磁场。假设这是因为那样的话\n\n合金粉末暴露在振动之下，合金粉末颗粒之间的摩擦力从静摩擦变化\n\n\n\n在动摩擦中，它们之间的摩擦阻力减小。\n\n\n\n\n\n振动优选地从印模表面（即，从上冲头的下侧和/或上方）传递\n\n\n\n下冲头的顶部）。通过设置下冲头机械振动的配置，可以\n\n\n\n特别是，可以以足够的量向合金粉末和压制装置的结构施加动能\n\n\n\n可以简化。\n\n\n\n\n\n振动优选地具有0.001至0.2mm的振幅。原因如下：如果振动是振幅\n\n\n\n特别地，如果小于0.001mm，则粉末颗粒的桥结构不能充分破碎。\n\n\n\n但是，如果振幅超过0.2mm，则粉末颗粒容易进入模具和下模之间的空间\n\n\n\n印章，可能会损坏模具或下冲头。\n\n振动优选地具有5至1000Hz的频率。原因如下：如果振动是一个\n\n\n\n频率小于5赫兹，则粉末颗粒的桥结构不能充分破碎。如果\n\n\n\n振动的频率超过1000赫兹，那么振动发生器太昂贵，不适合实际使用\n\n\n\n压紧装置。\n\n\n\n\n\n当脉冲磁场施加到腔体中的合金粉末时，粉末暴露于振动，\n\n\n\n达到如图4（b）所示的状态。当表观密度时，可以停止振动\n\n\n\n由于压缩，已达到预定值，或者即使在表观密度之后也可以继续\n\n\n\n已达到预定值。\n\n\n\n\n\n在压缩粉末密度在预定范围内时，根据需要施加脉冲磁场\n\n\n\n如上所述，优选调节上冲头和/或下冲头的冲程，使得上冲头和/或下冲头\n\n\n\n当获得具有给定密度的压制粉末时，印章停止其移动。而上部和/或下部\n\n阀杆暂时停止，可以施加对准磁场，然后可以恢复压制过程以关闭\n\n\n\n\n\n得到印前。\n\n\n\n\n\n在该优选实施例中，脉冲磁场（最大场强为2至5T和脉冲宽度）\n\n\n\n0.05 s），从下方有振动（幅度为0.01到0.03 mm，频率为40到80 Hz）\n\n\n\n在向上方向上转移冲头以在磁场的影响下对准取向方向。振动将是\n\n\n\n优选地，在将合金粉末填充到腔体中之后，通过降低鞋面来限定合金粉末\n\n\n\n印模和待压制的粉末之前的密度为3.55至3.90g / cm3。另外，脉冲磁场优选为\n\n\n\n停止上冲头和下冲头，从而在其中产生振动。此后，在该实施方案中，粉末\n\n\n\n再次，使得所得预制件的密度为4.0至4.4g / cm3。预压坯可以是例如尺寸\n\n\n\n60毫米×40毫米×20毫米。\n\n将该预制棒烧结2至6小时，例如，在Ar气氛中，在约1000至约1200℃下烧结。在那之后，\n\n\n\n在约400至约600℃的时效处理的Ar气氛中再次得到烧结体1至3小时。\n\n\n\n经受，从而获得烧结体。\n\n\n\n\n\n当脉冲磁场的施加定时被定义为要被按压的粉末的密度为1的定时\n\n\n\n给定值为3.55g / cm3或更高，则通过产生振动，剩磁进一步增加。时间\n\n\n\n脉冲磁场的施加优选地定义为压制粉末密度具有预定值的时间\n\n\n\n3.6克/立方厘米或更多。即使时间与压力相关，也可以实现足够的效果\n\n\n\n粉末密度为3.78g / cm3或更高。但是，本发明的发明人已经发现了脉冲磁场\n\n\n\n在压实粉末密度超过4.0g / cm3后，剩磁倾向于降低\n\n粉末颗粒不能充分对齐。鉴于这些考虑，优选应用脉冲磁场，\n\n\n\n而待压制的粉末的密度为3.55至3.9g / cm3。特别优选的密度范围的下限\n\n\n\n对于3.6g / cm 3，更优选的密度范围的下限为3.7g / cm 3。\n\n\n\n\n\n可选地，脉冲磁场可以多次施加到待压制的粉末上，包括\n\n\n\n密度在任何这些优选范围内。它不仅可以是脉冲磁场，还可以是静磁场\n\n\n\n被创造。\n\n\n\n\n\n在该优选实施例中，即使由于腔内的磁场分布也是如此\n\n\n\n在模具开口附近存在轭元件变得不均匀，对准程度仍然均匀\n\n\n\n通过控制（控制）施加脉冲磁场的定时。\n\n\n\n\n\n这同样适用于施加交替减小脉冲的情况。也就是说，磁粉可以\n\n可以设置旋转，并且腔内合金粉末的桥结构可以被磁场破坏\n\n\n\n改变方向。桥结构也可以通过施加反脉冲来实现，反脉冲不是交替脉冲\n\n\n\n减少势头将被打破。\n\n\n\n\n\n如在上述优选实施方案中那样，制备烧结体。特别是\n\n\n\n烧结体在以下条件下生产：\n\n\n\n粉末材料：通过粗粉碎具有包含30质量％Nd，1.0的组成的合金而制备的粉末\n\n\n\n质量百分比B，1.2质量％Dy，0.2质量％Al，0.9质量％Co和Fe，以及不可避免的杂质作为余量\n\n\n\n采用氢气粉碎法，然后用喷射磨机将粗粉末细粉碎;\n\n\n\n压制方法：使用图2所示的装置压制并压实粉末并施加脉冲\n\n\n\n施加峰值强度为3T（脉冲宽度为0.05s）的磁场作为取向磁场;\n\n对准磁场设备的启动：密度为3.6 g / cm3;\n\n\n\n紧凑的形状和尺寸：60毫米×40毫米×20毫米;和\n\n\n\n烧结过程：该过程在Ar气氛中在约1050℃下进行5.5小时。\n\n\n\n\n\n之后，将烧结体在Ar气氛中在约500℃下进行时效处理约3小时。\n\n\n\n\n\n比较例\n\n\n\n\n\n如在上述发明实施例中那样，制备烧结体，除了a\n\n\n\n施加1T的静磁场作为对准磁场。\n\n\n\n\n\n在对准方向上的两个点（即，在中心和末端）测量表面通量密度。\n\n\n\n施加磁场。结果，在本发明的实施例中，表面通量密度的差异为10％。\n\n\n\n但是，比较例中为4％。\n\n\n\n\n\n在上述优选实施方案中，使用Nd-Fe-B基带铸合金粉末\n\n\n\n具有优异的磁性，但使用的流动性特别差。本发明\n\n但是，即使使用通过其他方法制造的稀土合金粉末，也可以获得效果。\n\n\n\n\n\n在上述优选实施方案中，合金粉末也在之后使用\n\n\n\n它已经用润滑剂进行表面处理。或者，合金粉末可以是任何其他\n\n\n\n进行表面处理。此外，也可以使用造粒粉末。可以在下面加入可溶性粉末\n\n\n\n施加振动和/或对准磁场被压碎，从而具有足够的对准程度\n\n\n\n可以实现的。\n\n\n\n工业适用性\n\n\n\n\n\n本发明涉及一种用于生产的稀土合金粉末的垂直压制和压实方法\n\n\n\n具有优异磁性的烧结磁铁。紧凑型，使用压力机和\n\n\n\n已经生产出压实过程，具有足够高的生坯强度。另外，其合金颗粒在其中\n\n\n\n相当高的成绩。这样，可以得到磁特性优异的烧结磁铁。\n\n根据本发明，可以显着提高具有不寻常形状的烧结磁体的生产率（产量）。');
INSERT INTO `os_patent_instruction_text` VALUES (12987, 22816, 'TECHNICAL FIELD\n\n[0001]The present invention relates to a method for compacting a rare-earth alloy powder and a method of making a sintered body of a rare-earth alloy.\n\nBACKGROUND ART\n\n[0002]A rare-earth alloy sintered magnet (permanent magnet) is normally produced by compacting a powder of a rare-earth alloy, sintering the resultant powder compact and then subjecting the sintered body to an aging treatment. Permanent magnets currently used extensively in various applications include rare-earth-cobalt based magnets and rare-earth-iron-boron based magnets. Among other things, the rare-earth-iron-boron based magnets (which will be referred to herein as “R—Fe—B based magnets”, where R is one of the rare-earth elements including Y, Fe is iron and B is boron) are used more and more often in various electronic appliances. This is because an R—Fe—B based magnet exhibits a maximum energy product, which is higher than any of various other types of magnets, and yet is relatively inexpensive.\n\n[0003]An R—Fe—B based sintered magnet includes a main phase consisting essentially of a tetragonal R2Fe14B compound, an R-rich phase including Nd, for example, and a B-rich phase. In the R—Fe—B based sintered magnet, a portion of Fe may be replaced with a transition metal such as Co or Ni and a portion of boron (B) may be replaced with carbon (C). An R—Fe—B based sintered magnet, to which the present invention is applicable effectively, is described in U.S. Pat. Nos. 4,770,723 and 4,792,368, for example.\n\n[0004]In the prior art, an R—Fe—B based alloy has been prepared as a material for such a magnet by an ingot casting process. In an ingot casting process, normally, rare-earth metal, electrolytic iron and ferroboron alloy as respective start materials are melted by an induction heating process, and then the melt obtained in this manner is cooled relatively slowly in a casting mold, thereby preparing an alloy ingot.\n\n[0005]Recently, a rapid cooling process such as a strip casting process or a centrifugal casting process has attracted much attention in the art. In a rapid cooling process, a molten alloy is brought into contact with, and relatively rapidly cooled by, a single chill roller, a twin chill roller, a rotating disk or the inner surface of a rotating cylindrical casting mold, thereby making a solidified alloy, which is thinner than an alloy ingot, from the molten alloy. The solidified alloy prepared in this manner will be referred to herein as an “alloy flake”. The alloy flake produced by such a rapid cooling process normally has a thickness of about 0.03 mm to about 10 mm. According to the rapid cooling process, the molten alloy starts to be solidified from its surface that has been in contact with the surface of the chill roller. That surface of the molten alloy will be referred to herein as a “roller contact surface”. Thus, in the rapid cooling process, columnar crystals grow in the thickness direction from the roller contact surface. As a result, the rapidly solidified alloy, made by a strip casting process or any other rapid cooling process, has a structure including an R2Fe14B crystalline phase and an R-rich phase. The R2Fe14B crystalline phase usually has a minor-axis size of about 0.1 μm to about 100 μm and a major-axis size of about 5 μm to about 500 μm. On the other hand, the R-rich phase, which is a non-magnetic phase including a rare-earth element R at a relatively high concentration and having a thickness (corresponding to the width of the grain boundary) of about 10 μm or less, is dispersed on the grain boundary between the R2Fe14B crystalline phases.\n\n[0006]Compared to an alloy made by the conventional ingot casting process or die casting process (such an alloy will be referred to herein as an “ingot alloy”), the rapidly solidified alloy has been quenched in a shorter time (i.e., at a cooling rate of 102° C./sec to 104° C./sec). Accordingly, the rapidly solidified alloy has a finer structure and a smaller crystal grain size. In addition, in the rapidly solidified alloy, the grain boundary thereof has a greater area and the R-rich phase is dispersed broadly and thinly over the grain boundary. Thus, the rapidly solidified alloy also excels in the dispersiveness of the R-rich phase. Because the rapidly solidified alloy has the above-described advantageous features, a magnet with excellent magnetic properties can be made from the rapidly solidified alloy.\n\n[0007]An alternative alloy preparation method called “Ca reduction process (or reduction/diffusion process)” is also known in the art. This process includes the processing and manufacturing steps of: adding metal calcium (Ca) and calcium chloride (CaCl) to either the mixture of at least one rare-earth oxide, iron powder, pure boron powder and at least one of ferroboron powder and boron oxide at a predetermined ratio or a mixture including an alloy powder or mixed oxide of these constituent elements at a predetermined ratio; subjecting the resultant mixture to a reduction/diffusion treatment within an inert atmosphere; diluting the reactant obtained to make a slurry; and then treating the slurry with water. In this manner, a solid of an R—Fe—B based alloy can be obtained.\n\n[0008]It should be noted that any small block of a solid alloy will be referred to herein as an “alloy block”. The “alloy block” may be any of various forms of solid alloys that include not only solidified alloys obtained by cooling a melt of a material alloy (e.g., an alloy ingot prepared by the conventional ingot casting process or an alloy flake prepared by a rapid cooling process such as a strip casting process) but also a solid alloy obtained by the Ca reduction process.\n\n[0009]An alloy powder to be compacted is obtained by performing the processing steps of: coarsely pulverizing an alloy block in any of these forms by a hydrogen occlusion process, for example, and/or any of various mechanical milling processes (e.g., using a disk mill); and finely pulverizing the resultant coarse powder (with a mean particle size of 10 μm to 500 μm) by a dry milling process using a jet mill, for example.\n\n[0010]The R—Fe—B based alloy powder to be compacted preferably has a mean particle size of 1.5 μm to about 6 μm to achieve sufficient magnetic properties. It should be noted that the “mean particle size” of a powder refers to herein a mass median diameter (MMD) unless stated otherwise. However, when a powder with such a small mean particle size is used, the resultant flowability, compactibility (including cavity fill density and compressibility) and productivity will be bad.\n\n[0011]A powder made by a rapid cooling process such as a strip casting process (at a cooling rate of 102° C./s to 104° C./S), in particular, has a smaller mean particle size and a sharper particle size distribution that a powder made by an ingot casting process. Thus, the former powder is significantly inferior in flowability to the latter powder. Accordingly, the variation in the amount of the powder to be loaded into a cavity may exceed its allowable range or the fill density thereof within the cavity may become non-uniform. As a result, the variation in the mass or size of the resultant compact may exceed its allowable range or the compact may crack or chip. Furthermore, in that case, the magnetization directions of the compact cannot be sufficiently aligned by an aligning magnetic field, and the resultant sintered magnet exhibits low magnetic properties (such as its remanence).\n\n[0012]According to the direction in which the aligning magnetic field is applied, the pressing and compacting methods to obtain compacts for magnets are roughly classifiable into the two types of: a parallel pressing method in which the aligning magnetic field is applied parallel to the pressing (or compressing) direction; and a perpendicular pressing method in which the aligning magnetic field is applied perpendicularly to the pressing direction.\n\n[0013]Hereinafter, a pressing and compacting method for making a compact for an arched magnet will be described with reference to FIGS. 1(a) and 1(b). In FIGS. 1(a) and 1(b), the arrow B indicates the direction in which the aligning magnetic field is applied during the compaction process.\n\n[0014]To improve the productivity and magnetic properties, the arched magnet 1a shown in FIG. 1(a) is obtained by once making and then cutting the sintered block 1b shown in FIG. 1(b). In the prior art, a compact to be processed into the sintered block 1b is obtained by the perpendicular pressing method. This is because the perpendicular pressing method makes it possible to press and compact the given powder without disturbing its magnetic field orientations. Thus, a magnet obtained by the perpendicular pressing method normally exhibits better magnetic properties than a magnet obtained by the parallel pressing method.\n\n[0015]Meanwhile, yoke members are often provided in the vicinity of a die hole, which will define a cavity in a die made of a non-magnetic material, thereby concentrating the magnetic flux toward the inside of the cavity and increasing the strength of the aligning magnetic field. The yoke members are normally provided within 15 cm from the inner wall of the die hole as measured in the alignment direction. This arrangement is adopted because the higher the strength of the aligning magnetic fields within the cavity, the higher the remanence Br of the resultant magnet will be. If such a technique of increasing the in-cavity strength of the aligning magnetic field by using the yoke members is combined with the perpendicular pressing method described above, then a permanent magnet with even better properties can be produced.\n\n[0016]In recent years, a fine powder with particle sizes (FSSS particle sizes) of 6 μm or less is often used to reduce the grain sizes of a sintered magnet. To align such fine powder particles, a stronger magnetic field than the conventional ones needs to be applied. However, if the in-cavity magnetic field strength is increased with the yoke members, the in-cavity magnetic field strength will have a non-uniform distribution, in which the magnetic field strength increases toward the end of the cavity in the alignment direction. Such a magnetic field strongly attracts the magnet powder in the cavity toward the yoke members. As a result, the apparent density of the magnet powder will be lower at the center of the cavity than at the end of the cavity. Particularly in the conventional static magnetic field pressing process, the aligning magnetic field starts to be applied at an early stage of the compacting and compressing process step (at which the powder still has so low a density as to move freely within the cavity), and therefore, the powder is easily distributed non-uniformly within the cavity. In that case, the powder that has been gathered toward the end of the cavity is pressed and shifted toward the center of the cavity as the upper punch is lowered to press the powder. In the meantime, the orientation directions are disturbed at both ends of the cavity. For these reasons, in the perpendicular pressing process to be carried out with the yoke members, the degree of alignment and density of the resultant powder compact easily become non-uniform, and the uniformity of the magnet performance tends to deteriorate excessively. Also, if the yoke members are provided in the vicinity of the cavity, the magnetic flux is concentrated but tends to be curved easily.\n\n[0017]In order to overcome the problems described above, a primary object of the present invention is to provide a method for compacting a rare-earth alloy powder so as to produce a sintered magnet with uniform magnetic properties.\n\nDISCLOSURE OF INVENTION\n\n[0018]A rare-earth alloy powder compacting method according to the present invention is a method for compacting a rare-earth alloy powder by using a die. The die is made of a non-magnetic material and has a die hole and a pair of yoke members. The die hole defines a cavity, and the yoke members are provided on right- and left-hand sides of the die hole. The method includes the steps of: providing the rare-earth alloy powder; filling the cavity of the die with the rare-earth alloy powder; and compressing the rare-earth alloy powder, which has been loaded into the cavity, between a pair of press surfaces that are opposed to each other. A pulse magnetic field, which is substantially perpendicular to a compressing direction, is not applied until the apparent density of the rare-earth alloy powder in the cavity reaches a predetermined value, which is at least equal to 47% of the true density thereof, while the compressing step is being carried out.\n\n[0019]The method preferably further includes the step of generating vibration in the rare-earth alloy powder while the compressing step is being carried out and before the pulse magnetic field starts to be applied.\n\n[0020]In one preferred embodiment, the predetermined value is defined at 3.55 g/cm3 or more.\n\n[0021]In another preferred embodiment, the pulse magnetic field is an alternating attenuating field.\n\n[0022]In another preferred embodiment, the pulse magnetic field is an inverse pulse magnetic field.\n\n[0023]In another preferred embodiment, the vibration is transmitted from at least one of the two press surfaces.\n\n[0024]In another preferred embodiment, the rare-earth alloy powder is made by a rapid cooling process.\n\n[0025]An inventive method of making a sintered body of a rare-earth alloy includes the steps of: making a compact of the rare-earth alloy powder by one of the methods described above; and sintering the compact.\n\nBRIEF DESCRIPTION OF DRAWINGS\n\n[0026]FIG. 1(a) is a schematic representation illustrating an arched magnet, and FIG. 1(b) is a schematic representation of a sintered block to be processed into the arched magnet.\n\n[0027]FIG. 2 is a schematic representation illustrating a configuration for a press machine that can be used effectively in a compaction process according to a preferred embodiment of the present invention.\n\n[0028]FIG. 3 is a perspective view illustrating an exemplary configuration for a die for use in the compaction process in the preferred embodiment of the present invention.\n\n[0029]FIG. 4(a) schematically illustrates the state of powder particles in which vibration has already been generated in the compaction process of the present invention, while FIG. 4(b) schematically illustrates the state of powder particles in which no vibration has been generated yet.\n\nBEST MODE FOR CARRYING OUT THE INVENTION\n\n[0030]According to the present invention, a magnet powder is compressed and compacted with a die that is made of a non-magnetic material. The die for use in the present invention has a die hole to define a cavity and a plurality of yoke members provided on right- and left-hand sides of the die hole.\n\n[0031]The present inventors discovered and confirmed via experiments that if a pulse magnetic field was applied perpendicularly to the pressing direction for alignment purposes, a compact with a high degree of alignment could be obtained at a good yield by delaying the application of such a pulse magnetic field until the apparent density of the alloy powder (which will also be referred to herein as a “pressed powder density (or green density)”) reached a predetermined value.\n\n[0032]According to the results of experiments the present inventors carried out, if the pulse magnetic field is applied while the powder being pressed still has a relatively low density, there is a plenty of space around the respective powder particles, a relatively weak force is applied to bring the powder particles into contact with each other, and the powder particles are easily aligned with the direction of the magnetic field applied. In this case, the powder in the die hole is attracted toward the yoke members. As a result, a phenomenon in which the density becomes higher at the end than at the center is also observed. Thereafter, the powder under compaction is further pressed and increases its density gradually. Then, the powder flows to disturb the orientation directions. Consequently, the powder particles of the resultant green compact will have a decreased degree of alignment.\n\n[0033]To overcome such a problem, according to the present invention, the pulse magnetic field is not applied until the density of the powder being pressed reaches a predetermined value, which is at least equal to 47% of the true density thereof. By delaying the application of the pulse magnetic field until the pressed powder density reaches a certain level, the powder will not flow so easily and the orientation directions thereof will not be disturbed so much during the subsequent compressing and compacting process step.\n\n[0034]On the other hand, if the powder being pressed has an excessively high density when the pulse magnetic field is applied, there will be left too narrow a space around the respective powder particles, and the powder particles will contact with each other too strongly, to allow the powder particles to change their directions even under the pulse magnetic field applied. In this manner, if the pressed powder density increases so much as to exceed a predetermined value, it will be difficult to obtain a magnet with excellent magnetic properties even with an intense pulse magnetic field applied. For that reason, when the pulse magnetic field starts to be applied, the density of the powder being pressed is preferably at most 53% of the true density thereof.\n\n[0035]It should be noted that even at the same pressed powder density, the frictional drag between the alloy powder particles can still be reduced by generating vibration therein. Accordingly, the aligning magnetic field is preferably applied while the alloy powder is subjected to vibration. If the alloy powder is vibrated during the compressing/compacting process step, then the powder particles can be sufficiently aligned with the applied magnetic field even after its pressed powder density has reached a rather high value.\n\n[0036]Furthermore, even at the same pressed powder density, the frictional drag between the alloy powder particles can still be reduced by applying an alternating attenuating field thereto. In that case, the powder particles can be sufficiently aligned with the applied magnetic field even after its pressed powder density has reached a rather high value.\n\nEMBODIMENTS\n\n[0037]Hereinafter, preferred embodiments of a method of making a rare-earth alloy sintered body according to the present invention will be described with reference to the accompanying drawings.\n\n[0038]First, a rare-earth alloy powder for use in this preferred embodiment will be described. Various rare-earth alloy powders may be used in the present invention. Among other things, an R—Fe—B based rare-earth alloy is particularly preferred. Compositions and manufacturing processes of preferred R—Fe—B based rare-earth alloys are described in U.S. Pat. Nos. 4,770,723 and 4,792,368, for example.\n\n[0039]In an R—Fe—B based rare-earth alloy with a typical composition, Nd or Pr is often used as R, a portion of Fe may be replaced with a transition element (such as Co), and a portion of B may be replaced with C.\n\n[0040]In this preferred embodiment, a powder with a mean particle size of 1.5 μm to 6 μm, obtained by pulverizing an Nd—Fe—B based solidified alloy (with a density 7.5 g/cm3) that has been prepared by a rapid cooling process, is preferably used. The surface of the alloy powder is preferably coated with a lubricant such as zinc stearate. More specifically, the alloy powder can be obtained in the following manner. First, an alloy, having a composition including 30 mass % of Nd, 1.0 mass % of B, 1.2 mass % of Dy, 0.2 mass % of Al, 0.9 mass % of Co and Fe and inevitable impurities as the balance, is melted by an induction melting process to obtain a molten alloy. The molten alloy is solidified by the strip casting process, described in U.S. Pat. No. 5,383,978, thereby obtaining an alloy ingot. The resultant alloy ingot is coarsely pulverized by a hydrogen occlusion process and then finely pulverized with a jet mill, thereby obtaining an alloy powder with a mean particle size of 3.5 μm (including 0.3 mass % of zinc stearate as a lubricant).\n\n[0041]Next, this powder is compressed and compacted with a press machine. Hereinafter, a configuration for a press machine to be preferably used in this preferred embodiment will be described with reference to FIG. 2.\n\n[0042]The pressing/compacting machine 10 shown in FIG. 2 includes a base plate 12, which is supported by a plurality of legs 14. A die 16 is provided over the base plate 12. The lower surface of the die 16 is connected to a coupling plate 20 by way of a pair of guide posts 18 extending through the base plate 12. The coupling plate 20 is connected to a lower hydraulic cylinder (not shown) via a cylinder rod 22. Thus, the die 16 can be moved vertically by the lower hydraulic cylinder.\n\n[0043]A die hole (through hole) 24 is provided approximately at the center of the die 16 so as to extend perpendicularly through the die 16. A lower punch 26 is inserted upward into the die hole 24, thereby defining a cavity 28 inside of the die hole 24.\n\n[0044]As shown in FIG. 3, the die 16 includes a pair of yoke members 16a and 16b, which are opposed to each other so as to sandwich the die hole 24 between them in the direction in which the aligning magnetic field is applied (i.e., the X direction). The yoke members 16a and 16b are made of a material with a high permeability such as carbon steel (e.g., Permendur). To increase the productivity, the heat to be generated by an eddy current should be minimized and yet the orientation directions need to be aligned during the pressing process. To achieve these purposes at the same time, a material with a low saturation flux density Bs is preferably used. On the other hand, the die 16 is made of a non-magnetic material. The side surfaces of the die 16 have recesses to receive the yoke members 16a and 16b therein. As used herein, the “non-magnetic material” refers to a material with a saturation magnetization of 0.2 tesla (T) or less.\n\n[0045]As also shown in FIG. 3, the length 16c of the yokes is defined to be at least equal to, or greater than (up to 120% on, the length 24a of the cavity between them. By adopting such a size relationship, the directions of magnetic lines of flux can be further aligned.\n\n[0046]Look at FIG. 1 again.\n\n[0047]The lower punch 26 is provided on a vibrator 30, which is in turn placed on the die plate 12. Thus, the lower punch 26 is fixed onto the base plate 12 but may be vibrated by the vibrator 30 vertically, i.e., parallel to the pressing direction. As the vibrator 30, a vibrator produced by Daiichi Corp. may be used, for example.\n\n[0048]An upper punch plate 32 is provided over the die 16. An upper punch 34 is provided on the lower surface of the upper punch plate 32 so as to be insertable into the cavity 28. A cylinder rod 36 is provided on the upper surface of the upper punch plate 32. An upper hydraulic cylinder (not shown) is connected to the cylinder road 36. A pair of guide posts 38 extending perpendicularly is inserted into the upper punch plate 32 around the right and left edges thereof, and their bottoms are connected to the upper surface of the die 16.\n\n[0049]The upper punch plate 32 can be shifted vertically by the upper hydraulic cylinder while being guided by the guide posts 38. As a result, the upper punch 34 can also be shifted vertically and can be inserted into the cavity 28.\n\n[0050]In the pressing/compacting process, the given powder is compressed by the lower and upper punches 26 and 34 within the cavity 28, thereby making a compact.\n\n[0051]A magnetic field generator 40 is provided near the die 16 so as to align the orientation directions of the powder in the cavity 28. The magnetic field generator 40 includes a pair of yokes 42a and 42b, which are opposed to each other so as to sandwich the die 16 between them. As the yoke members 16a and 16b of the die 16, the yokes 42a and 42b are also made of a material with high permeability such as carbon steel. Coils 44a and 44b are wound around the yokes 42a and 42b, respectively. When currents are supplied through these coils, a pulse magnetic field is generated in the direction indicated by the arrow X, thereby aligning the orientation directions of the powder in the cavity 28. As used herein, the “pulse magnetic field” refers to a magnetic field of which the strength is 90% or more of its peak value for at most 0.2 second.\n\n[0052]In this press machine 10, the pressing direction is perpendicular to the direction of the aligning magnetic field, and the applied magnetic field may have a strength of 3 T at the center of the cavity, for example.\n\n[0053]The press machine 10 shown in FIG. 2 is withdrawal type press machine in which the die 16 is supposed to be moved up and down. Alternatively, a double-action-type press machine, in which both the upper and lower punches 34 and 26 are supposed to be moved, may also be used.\n\n[0054]As shown in FIG. 2, the cavity 24 is defined by the die hole 28 of the die 16 and the upper surface (i.e., press surface) of the lower punch 26, and then is filled with the alloy powder described above.\n\n[0055]The alloy powder may be loaded by any of various known methods. For example, a method of filling the cavity with the alloy powder in a feeder box by utilizing the weight of the alloy powder itself is simple and preferred. According to this method, the cavity can be filled with the alloy powder at an appropriate apparent density (of 1.7 g/cm3 to 2.5 g/cm3, for example). Also, after the cavity has been filled with the alloy powder, a slicing bar may be slid along the surface of the die 16 such that the amount of the alloy powder in the cavity 28 can be kept substantially constant. The powder feeding method disclosed in Japanese Laid-Open Publication No. 2001-9595 may be used, for example.\n\n[0056]Next, by moving the upper punch 34 and/or the lower punch 26 up and down, the alloy powder in the cavity 28 is uniaxially pressed. Typically, the upper punch 34 is moved downward. Alternatively, the upper punch 34 and lower punch 26 may be simultaneously moved downward and upward, respectively.\n\n[0057]In this preferred embodiment, while this uniaxial pressing process is being carried out, the alloy powder in the cavity 28 is subjected to (mechanical) vibration. By vibrating the alloy powder, the bridge structure that links the powder particles together is broken, thereby allowing the powder particles to move easily. Hereinafter, it will be described with reference to FIGS. 4(a) and 4(b) exactly how that bridge structure is broken by the vibration generated.\n\n[0058]As shown in FIG. 4(b), the alloy powder that has just been loaded into the cavity defines the bridge structure by allowing the particles 2 to contact with each other. Accordingly, the total volume of the spaces 3 between the particles 2 is relatively large but the spaces 3 are distributed non-uniformly. However, by subjecting the alloy powder in such a state to vibration, the bridge structure that has been formed by the contacting particles 2 is broken, and the non-uniformly distributed spaces 3 are now arranged uniformly as shown in FIG. 4(a). As a result, the total volume of the spaces 3 between the particles 2 decreases and the powder has an increased apparent density. However, since the spaces 3 are distributed substantially uniformly around the respective particles 2, the particles 2 can now move (i.e., rotate due to the alignment of orientation directions under the magnetic field) easily. Naturally, the density distribution of the alloy powder in the cavity also becomes uniform. Furthermore, even though the apparent density remains the same, the alloy powder is movable, and can be aligned with the aligning magnetic field, more easily with the vibration generated than without any vibration generated. This is believed to be because when the alloy powder is subjected to the vibration, the friction between the alloy powder particles changes from static friction into kinetic friction to decrease the frictional drag between them.\n\n[0059]The vibration is preferably transmitted from the press surface(s) (i.e., the bottom of the upper punch and/or the top of the lower punch). In particular, by adopting a configuration in which the lower punch is vibrated mechanically, kinetic energy can be applied to the alloy powder efficiently and the structure of the press machine can be simplified.\n\n[0060]The vibration preferably has an amplitude of 0.001 mm to 0.2 mm. The reason is as follows. Specifically, if the vibration has an amplitude of less than 0.001 mm, the bridge structure of the powder particles could not be broken sufficiently. However, if the amplitude exceeds 0.2 mm, then the powder particles will easily eat into the gap between the die and the lower punch, thus possibly hurting the die or the lower punch.\n\n[0061]The vibration preferably has a frequency of 5 Hz to 1,000 Hz. The reasons are as follows. Specifically, if the vibration has a frequency of less than 5 Hz, then the bridge structure of the powder particles could not be broken sufficiently. However, if the vibration has a frequency exceeding 1,000 Hz, then the vibration generator will be too expensive to use the press machine actually.\n\n[0062]When the pulse magnetic field starts to be applied to the alloy powder in the cavity, the powder is subjected to the vibration to achieve the state shown in FIG. 4(b). The vibration may be either stopped when the apparent density reaches the predetermined value as a result of the compression or continued even after the apparent density has reached the predetermined value.\n\n[0063]To apply the pulse magnetic field just as intended while the pressed powder density falls within a predetermined range, the strokes of the upper punch and/or lower punch are preferably controlled such that the upper punch and/or lower punch once stop moving when a pressed powder with a predetermined density is obtained. While the upper and/or lower punch(es) are/is temporarily stopped, the aligning magnetic field may be applied and then the pressing process may be resumed to obtain a green compact in the end.\n\n[0064]In this preferred embodiment, a pulse magnetic field (with a maximum field strength of 2 T to 5 T and a pulse width of 0.05 second) is applied and a vibration (with an amplitude of 0.01 mm to 0.03 mm and a frequency of 40 Hz to 80 Hz) is transmitted upward from the lower punch in order to align the orientation directions under the magnetic field. The vibration is preferably generated after the alloy powder has been loaded such that the cavity is defined by lowering the upper punch and before the powder being pressed has a density of 3.55 g/cm3 to 3.90 g/cm3. Also, the pulse magnetic field is preferably applied with the upper and lower punches stopped and with the vibration generated therein. Thereafter, in this preferred embodiment, the powder is pressed again such that the resultant green compact has a density of 4.0 g/cm3 to 4.4 g/cm3. The green compact may have dimensions of 60 mm×40 mm×20 mm, for example.\n\n[0065]This green compact is sintered at about 1,000° C. to about 1,200° C. for 2 to 6 hours within an Ar atmosphere, for example. Thereafter, the resultant sintered compact is subjected to an aging treatment at about 400° C. to about 600° C. for 1 to 3 hours within an Ar atmosphere again, thereby obtaining a sintered body.\n\n[0066]If the pulse magnetic field application timing is defined as a point in time when the density of the powder being pressed reaches a predetermined value of 3.55 g/cm3 or more, then the generation of the vibration further increases the remanence. The pulse magnetic field application timing is preferably defined as a point in time when the pressed powder density reaches a predetermined value of 3.6 g/cm3 or more. Sufficient effects are achievable even if the timing is associated with a pressed powder density of 3.78 g/cm3 or more. However, the present inventors discovered that if the pulse magnetic field was applied after the pressed powder density exceeded 4.0 g/cm3, then the remanence tended to decrease and the powder particles could not be aligned sufficiently. In view of these considerations, the pulse magnetic field is preferably applied while the powder being pressed has a density of 3.55 g/cm3 to 3.9 g/cm3. The lower limit of a more preferable density range is 3.6 g/cm3, and the lower limit of an even more prefer', '技术领域\n\n[0001]本发明涉及一种用于压实稀土合金粉末的方法及制备稀土合金的烧结体的方法。\n\n背景技术\n\n[0002]通常通过压实稀土合金的粉末,烧结所得粉末紧凑,然后使烧结体进行老化处理来生产稀土合金烧结磁体(永磁体)。目前在各种应用中广泛使用的永磁体包括基于稀土 - 钴基磁体和稀土 - 铁 - 硼基磁体。其中,稀土 - 铁 - 硼基磁铁(在本文中称为“R-Fe-B基磁体”,其中R是包括Y,Fe的稀土元素之一是铁和B.是硼)越来越多地用在各种电子设备中。这是因为R-Fe-B基磁体表现出最大的能量产品,其高于各种其他类型的磁体,但却相对便宜。\n\n[0003]R-Fe-B基烧结磁体包括基本上由四方R构成的主阶段2Fe.14B化合物,富含R的相,包括Nd,例如富含B的相。在基于R-Fe-B的烧结磁体中,可以用诸如CO或Ni的过渡金属代替一部分Fe,并且可以用碳(C)代替一部分硼(B)。在美国专利No.4,522,587中描述了本发明的R-Fe-B基烧结磁铁。例如,4,770,723和4,792,368。\n\n[0004]在现有技术中,通过铸锭铸造方法制备了R-Fe-B基础合金作为这种磁体的材料。在铸锭铸造过程中,通常,作为相应的起始材料稀土金属,电解铁和硼隆合金通过感应加热过程熔化,然后以这种方式获得的熔体在铸造模具中相对缓慢地冷却,从而制备合金锭。\n\n[0005]最近,快速冷却过程如条带铸造工艺或离心铸造过程引起了本领域的许多关注。在快速冷却过程中,通过单个冷却辊,双冷却辊,旋转圆柱铸造模具的旋转盘或旋转圆柱形铸造模具的旋转盘或相对快速地冷却熔融合金,从而使旋转圆柱铸造模具的旋转盘或相对迅速冷却,从而制造凝固的合金,从熔融合金中比合金锭更薄。以这种方式制备的固化合金在本文中将称为“合金薄片”。通过这种快速冷却过程产生的合金薄片通常具有约0.03mm至约10mm的厚度。根据快速冷却过程,熔融合金开始从其表面凝固,该表面已经与冷却辊的表面接触。熔融合金的表面在本文中将称为“滚子接触表面”。因此,在快速冷却过程中,柱状晶体从辊接触​​表面沿厚度方向生长。结果,通过条带铸造工艺或任何其他快速冷却过程制造的快速凝固的合金具有包括R的结构2Fe.14B结晶相和富含R相。 r.2Fe.14B结晶相通常具有约0.1μm至约100μm的次轴尺寸,并且主轴尺寸为约5μm至约500μm。另一方面,富含R的相位,其是非磁性相,其包括稀土元素R,其具有相对高的浓度并且具有约10μm或更小的厚度(对应于晶界的宽度) ,分散在r之间的晶界面上2Fe.14B结晶相。\n\n[0006]与常规铸锭铸造工艺或压铸过程制造的合金相比(这种合金在本文中作为“铸造合金”),在较短的时间内(即,以冷却速率淬火)迅速凝固的合金10.2°C./sec到104°C./sec)。因此,快速凝固的合金具有更细的结构和较小的晶粒尺寸。另外,在快速凝固的合金中,其晶界具有更大的面积,并且R-富相位在晶界上宽且薄薄地分散。因此,快速凝固的合金也擅长R-富相的分散性。因为快速凝固的合金具有上述有利特征,所以可以由具有优异磁性的磁体由快速凝固的合金制成。\n\n[0007]替代合金制备方法,称为“Ca还原过程(或还原/扩散过程)”在本领域中也已知。该方法包括:加入和制造步骤:将金属钙(Ca)和氯化钙(CaCl)加入至少一种稀土氧化物,铁粉,纯硼粉末和硼铜和硼中的至少一种的混合物氧化物以预定的比例或包括这些组成元素的合金粉末或这些组成元素的混合氧化物的混合物。使所得混合物在惰性气氛中进行减少/扩散处理;稀释得到的反应物制成浆液;然后用水处理浆料。以这种方式,可以获得R-Fe-B基合金的固体。\n\n[0008]应注意,在本文中,任何小块的固体合金都将被称为“合金块”。 “合金块”可以是各种形式的固体合金中的任何一种,其不仅包括通过冷却材料合金的熔体而获得的凝固合金(例如,通过常规铸锭铸造工艺制备的合金铸锭或通过快速制备的合金薄片制备冷却过程如带钢铸造工艺),而且还通过Ca还原过程获得的固体合金。\n\n[0009]通过执行以下方法:通过氢闭塞过程(例如,使用磁盘磨机中的任何一种(例如,各种机械铣削方法)粗糙地粉碎其中任何形式中的任何形式的合金块(例如,使用磁盘研磨机中的任何一种)来获得待压缩的合金粉末);并通过使用喷射磨机将所得粗粉末(平均粒度为10μm至500μm)通过使用喷射磨机。\n\n[0010]待压制的R-Fe-B基合金粉末优选具有1.5μm至约6μm的平均粒度,以获得足够的磁性。应当注意,粉末的“平均粒度”是指本文的质量中值直径(MMD),除非另有说明。然而,当使用具有这种小平均粒度的粉末时,所得到的流动性,可压性(包括腔填充密度和压缩性)和生产率会很差。\n\n[0011]通过快速冷却过程制造的粉末,例如条带铸造工艺(冷却速度为102°C./s至104特别地,℃/℃具有较小的平均粒度和更清晰的粒度分布,即由铸锭浇铸过程制成的粉末。因此,前粉末在后一种粉末的流动性方面显着劣等。因此,装载到腔中的粉末的量的变化可能超过其允许的范围或其内腔内的填充密度可以变得不均匀。结果,所得压块的质量或尺寸的变化可以超过其允许范围或紧凑的可以破裂或芯片。此外,在这种情况下,压块的磁化方向不能通过对准磁场充分对准,所得烧结磁体表现出低磁性(例如其剩磁)。\n\n[0012]根据施加对准磁场的方向,对磁体的压制和压实方法大致分类为两种类型的:平行按压方法,其中对准磁场并联施加到压制(或压缩)方向;和垂直按压方法,其中对准磁场垂直于按压方向施加。\n\n[0013]在下文中,将参考图4和图5描述用于制造拱形磁体的紧凑的压制和压实方法。 1(a) 和1(b)。在图中1(a) 和1(b),箭头B表示在压实过程中施加对准磁场的方向。\n\n[0014]提高生产率和磁性,拱形磁铁1a 如图所示。 1(a)通过制造然后切割烧结块而获得1b 如图所示。 1(b)。在现有技术中,将紧凑块加工到烧结块中1b 通过垂直压制方法获得。这是因为垂直按压方法使得可以在不扰乱其磁场取向的情况下压制和压缩给定粉末。因此,通过垂直按压方法获得的磁体通常表现出比通过通过平行按压方法获得的磁体的磁性更好。\n\n[0015]同时,磁轭成员通常在模孔附近提供,这将在由非磁性材料制成的模具中限定腔体,从而将磁通量朝向空腔的内部集中并增加对准磁的强度场地。轭构件通常在沿对准方向上测量的模孔的内壁在15cm内提供。采用这种布置,因为腔内的对准磁场的强度越高,剩余越高r 所得到的磁铁将是。如果通过使用轭构件增加对准磁场的腔体强度的这种技术与上述垂直按压方法组合,则可以产生具有甚至更好的性质的永磁体。\n\n[0016]近年来,颗粒尺寸(FSSS粒度)为6μm或更小的细粉末通常用于减少烧结磁体的晶粒尺寸。为了对准这种细粉颗粒,需要施加比传统的磁场更强的磁场。然而,如果用轭构件增加腔磁场强度,则腔内磁场强度将具有不均匀的分布,其中磁场强度在对准方向上朝向腔的末端增加。这种磁场强烈地吸引腔中的磁体粉末朝向轭构件。结果,磁体粉末的表观密度在腔的中心处比在腔的末端处于腔的中心。特别是在传统的静磁场按压过程中,对准磁场开始在压实和压缩工艺步骤的早期阶段施加(粉末仍然具有如此低的密度,以便在腔内自由移动),以及因此,粉末在腔内易于均匀地分布。在这种情况下,在上冲头被降低以压下粉末,压制朝向腔的端部的粉末被压下并朝向腔的中心移位。同时,取向方向在腔的两端受到干扰。由于这些原因,在用轭部件进行的垂直压制过程中,所得粉末紧凑的对准程度和密度容易变得不均匀,并且磁体性能的均匀性趋于过度劣化。而且,如果在腔附近提供轭构件,则磁通量浓缩,但趋于容易弯曲。\n\n[0017]为了克服上述问题,本发明的主要目的是提供一种用于压实稀土合金粉末的方法,以便产生具有均匀磁性的烧结磁体。\n\n发明内容\n\n[0018]根据本发明的稀土合金粉末压实方法是通过使用模具来压实稀土合金粉末的方法。模具由非磁性材料制成,并且具有模具孔和一对轭构件。管孔限定腔,磁轭构件设置在管孔的右手和左侧。该方法包括以下步骤:提供稀土合金粉末;用稀土合金粉末填充模具的空腔;并压缩已经装入腔体的稀土合金粉末,在彼此相对的一对压力表面之间。脉冲磁场基本垂直于压缩方向,直到腔中稀土合金粉末的表观密度达到预定值,这是至少等于其真实密度的47%,虽然正在进行压缩步骤。\n\n[0019]该方法优选地还包括在稀土合金粉末中产生振动的步骤,同时进行压缩步骤并且在脉冲磁场开始施加之前。\n\n[0020]在一个优选实施例中,预定值定义为3.55g / cm3 或者更多。\n\n[0021]在另一个优选实施例中,脉冲磁场是交替的衰减场。\n\n[0022]在另一个优选实施例中,脉冲磁场是逆脉冲磁场。\n\n[0023]在另一个优选实施例中,振动从两个压力表面中的至少一个传递。\n\n[0024]在另一个优选的实施方案中,稀土合金粉末通过快速冷却过程制成。\n\n[0025]一种制备稀土合金烧结体的本发明方法包括以下步骤:通过上述方法之一制备稀土合金粉末的紧凑;并烧结紧凑。\n\n图纸简述\n\n[0026]如图。 1(a图示出了拱形磁铁的示意图。 1(b)是要加工到拱形磁体中的烧结块的示意图。\n\n[0027]如图。图2是示出根据本发明优选实施例的可以有效地使用的压力机的配置的示意图。\n\n[0028]如图。图3是示出用于在本发明的优选实施例中用于压实处理的芯片的示例性配置的透视图。\n\n[0029]如图。 4(a[图]示意性地示出了在本发明的压实过程中已经产生了振动的粉末颗粒的状态。 4(b)示意性地示出了尚未产生振动的粉末颗粒的状态。\n\n实施本发明的最佳方式\n\n[0030]根据本发明,磁体粉末被压制并用由非磁性材料制成的模具压实。用于本发明的芯片具有模具孔,以限定腔体和设置在管孔的右手侧和左手侧上的多个磁轭构件。\n\n[0031]本发明人通过实验发现和确认,如果脉冲磁场垂直施加到用于对准目的的按压方向,可以通过延迟这种脉冲磁场的应用,以良好的产量获得具有高程度的紧凑型直到合金粉末的表观密度(在本文中也称为“压制粉末密度(或绿色密度)”)达到预定值。\n\n[0032]根据实验结果,本发明人进行,如果施加脉冲磁场,而在按压粉末仍然具有相对低的密度时,则围绕相应的粉末颗粒存在大量空间,施加相对弱的力将粉末颗粒彼此接触,并且粉末颗粒容易与所施加的磁场的方向对齐。在这种情况下,模孔中的粉末被吸引到轭部件。结果,在末端的末端也观察到该现象的现象也被观察到。此后,进一步压制粉末并逐渐增加其密度。然后,粉末流动以干扰取向方向。因此,所得绿色紧凑的粉末颗粒将具有降低的取向程度。\n\n[0033]为了克服这样的问题,根据本发明,不施加脉冲磁场直到被压制的粉末的密度达到预定值,这至少等于其真实密度的47%。通过延迟脉冲磁场的施加,直到压制的粉末密度达到一定水平,粉末不会如此容易地流动,并且在随后的压缩和压实工艺步骤期间,其取向方向不会受到干扰。\n\n[0034]另一方面,如果在施加脉冲磁场时被压制的粉末具有过高的密度,则围绕相应的粉末颗粒留下过于窄的空间,并且粉末颗粒将彼此接触太强烈,至即使在施加的脉冲磁场下,允许粉末颗粒改变它们的方向。以这种方式,如果压制的粉末密度增加到超过预定值的增加,即使施加强烈的脉冲磁场,难以获得具有优异磁性的磁体。因此,当施加脉冲磁场开始时,被压制的粉末的密度优选为其真实密度的53%。\n\n[0035]应当注意,即使在相同的压制粉末密度,也可以通过在其中产生振动来降低合金粉末颗粒之间的摩擦阻力。因此,优选地,在合金粉末经受振动的同时施加对准磁场。如果在压缩/压实过程步骤期间振动合金粉末,则即使在其压制粉末密度达到相当高的值之后,粉末颗粒也可以与施加的磁场充分对准。\n\n[0036]此外,即使在相同的压制粉末密度,通过施加交替的衰减场仍然可以减少合金粉末颗粒之间的摩擦阻力。在这种情况下,即使在其压制粉末密度达到相当高的值之后,粉末颗粒也可以与施加的磁场充分对准。\n\n实施方式\n\n[0037]在下文中,将参考附图描述制备根据本发明的稀土合金烧结体的方法的优选实施方案。\n\n[0038]首先,将描述用于该优选实施方案的稀土合金粉末。各种稀土合金粉末可用于本发明。除此之外,特别优选基于R-Fe-B的稀土合金。优选的基于R-Fe-B稀土合金的组合物和制造方法描述于美国专利No.5,516中。例如,4,770,723和4,792,368。\n\n[0039]在具有典型组合物的R-Fe-B稀土合金中,通常用作R的Nd或Pr,可以用过渡元件(例如CO)代替Fe的一部分,并且B的一部分可以是用C替换为C.\n\n[0040]在该优选实施方案中,通过粉碎基于Nd-Fe-B的固化合金(密度为7.5g / cm)而获得平均粒径为1.5μm至6μm的粉末3已经通过快速冷却过程制备的)优选使用。合金粉末的表面优选用诸如硬脂酸锌如锌的润滑剂涂覆。更具体地,可以以下列方式获得合金粉末。首先,具有包含30质量%Nd的组合物的合金,1.0质量%的B,1.2质量%的Dy,0.2质量%的Al,0.9质量%的CO和Fe和不可避免的杂质作为平衡,熔化一种感应熔化过程,得到熔融合金。熔融合金通过条带铸造方法固化,在美国专利No.4,522,587中描述。美国专利No.5,383,978,从而获得合金锭。所得合金锭通过氢闭塞过程粗地粉碎,然后用喷射磨机细细地粉碎,从而获得平均粒径为3.5μm的合金粉末(包括0.3质量%的锌作为润滑剂硬脂酸锌)。\n\n[0041]接下来,将该粉末压缩并用压力机压实。在下文中,将参考图4描述用于优选在该优选实施例中的压力机的配置。 2。\n\n[0042]压制/压实机10如图所示。 2包括底板12,这是多个腿的支撑14。一死16提供在底板上12。模具的下表面16连接到连接板20通过一对指南帖子18延伸穿过底板12。联轴器板20通过气缸杆连接到下液压缸(未示出)22。因此,模具16可以通过下液压缸垂直移动。\n\n[0043]一个管孔(穿孔)24大约提供在模具的中心16以便垂直于模具延伸16。一个较低的拳头26将向上插入管孔24,从而限定腔28在模具洞的内部24。\n\n[0044]如图1所示。 3,模具16包括一对轭成员16a 和16b,这彼此相对,以便将模具孔夹在一起24在它们之间沿施加对准磁场的方向(即,x方向)。枷锁成员16a 和16b 由具有高渗透性的材料制成,例如碳钢(例如,偶偶)。为了提高生产率,应最小化涡流产生的热量,并且在按压过程中需要对准方向。为了达到这些目的,同时,优选使用具有低饱和磁通密度BS的材料。另一方面,模具16由非磁性材料制成。模具的侧表面16有凹槽接收轭成员16a 和16b 其中。如本文所用,“非磁性材料”是指具有0.2特斯拉(T)或更小的饱和磁化强度的材料。\n\n[0045]也如图1所示。 3,长度16c 轭的定义为至少等于或大于(长度为120%)24a 他们之间的腔。通过采用这样的尺寸关系,可以进一步对准磁线的磁线的方向。\n\n[0046]看看图。再一次。\n\n[0047]较低的拳头26提供振动器30,又将其放置在模板上12。因此,较低的冲床26固定在底板上12但可能被振动器振动30垂直,即平行于按压方向。作为振动器30例如,可以使用由Daiichi Corp.生产的振动器。\n\n[0048]一个上拳击板32提供在模具上16。一个上拳34设置在上冲头板的下表面上32以便可插入腔体28。气缸棒36设置在上冲头板的上表面上32。上液压缸(未示出)连接到汽缸道路36。一对指南帖子38垂直延伸到上冲孔板中32在其左右边缘周围,它们的底部连接到模具的上表面16。\n\n[0049]上盘板32可以通过上液压缸垂直移动,同时由引导件引导38。结果,上部冲头34也可以垂直移动,可以插入腔体中28。\n\n[0050]在压制/压实过程中,给定的粉末被下部和上拳压缩26和34在腔内28,从而制作紧凑。\n\n[0051]磁场发生器40在模具附近提供16以便对准腔内粉末的方向方向28。磁场发生器40包括一对轭42a 和42b,这与彼此相对,以便将模具夹在一起16它们之间。作为枷锁成员16a 和16b 死亡16,轭42a 和42b 也由具有高渗透性如碳钢的材料制成。线圈44a 和44b 缠绕在轭上42a 和42b, 分别。当通过这些线圈供应电流时,脉冲磁场在箭头X所示的方向上产生脉冲磁场,从而将粉末在腔内的方向方向对准28。如本文所用,“脉冲磁场”是指其强度为90%或更多的峰值,最多为0.2秒。\n\n[0052]在此新闻机10,按压方向垂直于对准磁场的方向,并且施加的磁场可以在腔体的中心处具有3 T的强度。\n\n[0053]新闻机10如图所示。 2是退出型压机,其中模具16应该是上下移动的。或者,双动型压力机,其中鞋面和下拳34和26应该移动,也可以使用。\n\n[0054]如图1所示。 2,腔24由模孔定义28死亡16和下孔的上表面(即压制表面)26然后填充上述合金粉末。\n\n[0055]合金粉末可以通过各种已知方法中的任何一种装载。例如,通过利用合金粉末本身的重量和优选通过利用合金粉末的重量填充腔室用合金粉末填充腔的方法。根据该方法,可以以适当的表观密度(为1.7g / cm的合金粉末填充腔体3 2.5克/厘米3, 例如)。而且,在腔体填充合金粉末之后,切片杆可以沿着模具的表面滑动16使得腔内合金粉末的量28可以保持基本恒定。例如,可以使用日语公开No.2001-9595中公开的粉末进给方法。\n\n[0056]接下来,通过移动上冲孔34和/或较低的冲床26上下,腔中的合金粉末28是单轴按下。通常,上拳34向下移动。或者,上冲头34和较低的拳头26可以分别同时向上和向上移动。\n\n[0057]在该优选实施例中,虽然进行这种单轴压制过程,但腔中的合金粉末28受到(机械)振动。通过振动合金粉末,将粉末颗粒连接在一起的桥结构破裂,从而允许粉末颗粒容易地移动。在下文中,将参考图1和图2描述它。 4(a) 和4(b)通过产生的振动,恰好破坏了桥梁结构。\n\n[0058]如图1所示。 4(b),刚装入腔中的合金粉末通过允许颗粒来限定桥接结构2彼此接触。因此,空间的总体积3颗粒之间2相对较大但空间3不均匀分布。然而,通过使合金粉末在这种状态下振动,通过接触颗粒形成的桥接结构2被打破,而非均匀分布的空间3现在布置均匀地如图2所示。 4(a)。结果,空间的总体积3颗粒之间2降低,粉末具有增加的表观密度。但是,自从空间以来3在相应的颗粒周围基本均匀地分布2,粒子2现在可以移动(即,由于磁场下方的取向方向对准而旋转)。当然,腔中合金粉末的密度分布也变得均匀。此外,即使表观密度保持相同,合金粉末也可移动,并且可以与对准磁场对准,更容易与产生的振动更容易,而不是产生任何振动。这被认为是因为当合金粉末受到振动时,合金粉末颗粒之间的摩擦从静摩擦变为动力学摩擦,以降低它们之间的摩擦阻力。\n\n[0059]振动优选地从压制表面(即,上冲头的底部和/或下冲头的顶部)传递。特别地,通过采用机械地振动的配置,可以有效地将动能施加到合金粉末,并且可以简化压力机的结构。\n\n[0060]振动优选具有0.001mm至0.2mm的幅度。原因如下。具体地,如果振动的幅度小于0.001mm,则粉末颗粒的桥接结构不能充分破裂。然而,如果振幅超过0.2mm,则粉末颗粒将容易地进入模具和下冲头之间的间隙,因此可能损害管芯或下冲头。\n\n[0061]振动优选地具有5Hz至1,000Hz的频率。原因如下。具体地,如果振动的频率小于5Hz,则粉末颗粒的桥接结构不能被充分破裂。但是,如果振动的频率超过1,000 Hz,那么振动发生器实际上将太昂贵,无法使用压力机。\n\n[0062]当脉冲磁场开始施加到腔中的合金粉末时,粉末经受振动以实现图2所示的状态。 4(b)。当表观密度由于压缩而达到预定值或即使在表观密度达到预定值之后,振动也可以停止。\n\n[0063]在按压粉末密度在预定范围内落下的同时施加脉冲磁场,优选地控制上冲头和/或下冲头的冲程,使得上冲头和/或更低的冲击机一旦按下时停止移动获得具有预定密度的粉末。虽然暂时停止上和/或下冲头,并且可以施加对准磁场,然后可以恢复按压过程以在最后获得绿色紧凑。\n\n[0064]在该优选实施例中,施加脉冲磁场(具有2t至5t的最大场强,脉冲宽度为0.05秒),振动(幅度为0.01mm至0.03mm,频率为40 Hz到80 Hz)从下冲击透射,以便对准磁场下的方向方向。优选在加载合金粉末之后产生振动,使得通过降低上冲头并且在被压制的粉末之前限定腔的密度为3.55g / cm3 3.90 g / cm3。而且,脉冲磁场优选地施加载体和下冲头,并且在其中产生的振动。此后,在该优选实施方案中,再次压制粉末,使得所得的绿色结构的密度为4.0g / cm3 4.4克/厘米3。例如,绿色结构可以具有60mm×40mm×20mm的尺寸。\n\n[0065]例如,这种绿色块在约1,000℃至约1,200℃下烧结在AR气氛中2至6小时。此后,将所得烧结体在约400℃至约600℃下再次在约400℃至约600℃下进行老化处理1至3小时,从而获得烧结体。\n\n[0066]如果脉冲磁场施加定时定义为当被压制的粉末密度达到3.55g / cm的预定值达到的时间点3 或者更多,那么振动的产生进一步增加了剩磁。脉冲磁场施加定时优选地定义为压制粉末密度达到预定值为3.6g / cm的时间点3 或者更多。即使定时与3.78g / cm的压制粉末密度相关联,也可以实现足够的效果3 或者更多。然而,本发明人发现,如果在压制粉末密度超过4.0g / cm之后施加脉冲磁场3,然后倾向于降低并且粉末颗粒不能充分对齐。鉴于这些考虑因素,优选地,在压制粉末的同时施加脉冲磁场的密度为3.55g / cm3 到3.9克/厘米3。更优选的密度范围的下限为3.6g / cm3,甚至更优选的密度范围的下限为3.7g / cm3。\n\n[0067]可选地,脉冲磁场可以将多次施加到被压下的粉末,密度落入任何这些优选的范围内。而且,不仅可以应用脉冲磁场,而且可以应用静磁场。\n\n[0068]根据该优选实施例,即使由于在管孔附近的轭构件存在由于轭构件的存在而变得不均匀,则通过控制脉冲磁性仍然可以均匀地进行对准程度现场应用程序定时。\n\n[0069]相同的陈述也适用于应用交替衰减脉冲的情况。也就是说,可以旋转磁粉,并且可以通过具有交替方向的磁场破坏腔中的合金粉末的桥接结构。桥结构也可以通过施加逆脉冲来破坏,而不仅仅是交替的衰减脉冲。\n\n例子\n\n[0070]如在上述优选实施例中那样,制造烧结体。具体地,在以下条件下制备烧结体:  [0071]材料粉末:通过粗地粉碎具有30质量%的Nd,1.0质量%的B,1.2质量%的Dy,0.2质量%的Al,0.9质量%的Co和Fe和不可避免的杂质的合金而获得的粉末。通过氢粉碎过程的平衡,然后用喷射磨机将粗粉粉碎;[0072]压实方法:通过使用图1所示的机器压缩和压实粉末。如图2所示,脉冲磁场具有3 T(脉冲宽度为0.05秒的脉冲宽度)的脉冲磁场;[0073]对准磁场开始施加:密度为3.6g / cm3;[0074]压块的形状和尺寸:60 mm×40 mm×20 mm;和[0075]烧结过程:在AR气氛中在约1,050℃下进行5.5小时。\n\n此后,在AR气氛中在约500℃下进行烧结块在约500℃下进行老化处理。\n\n比较例\n\n[0076]除了将1 T的静磁场施加为对准磁场之外,如上所述的本发明的实施例中制备烧结体。\n\n[0077]在施加对准磁场的方向上以两个点(即,在中心和端部)测量表面磁通密度。结果,在本发明的实施例中,表面通量密度的差异为10%,但在比较例中为4%。\n\n[0078]在上述优选实施方案中,使用具有优异磁性但具有特别低的流动性的条带铸造Nd-Fe-B合金粉末。然而,即使通过使用通过任何其他方法制造的稀土合金粉末,本发明的效果也是天然可实现的。\n\n[0079]而且,在上述优选实施方案中,在用润滑剂进行表面处理之后使用合金粉末。或者,可以对合金粉末进行任何其他表面处理。此外,也可以使用粒状粉末。粒状粉末可以在振动和/或对准磁场下粉碎,因此可以实现足够的对准程度。\n\n工业实用性\n\n[0080]本发明提供了一种用于稀土合金粉末的垂直压制和压实方法,以产生具有优异磁性的烧结磁体。通过本发明的压制和压实方法获得的紧凑型具有足够高的绿色密度。另外,其合金颗粒与相当高度对齐。因此,可以获得具有优异磁性的烧结磁体。根据本发明,烧结磁体以异常形状的生产率可以显着增加。');
INSERT INTO `os_patent_instruction_text` VALUES (12988, 22817, '【0001】\n\n【発明の属する技術分野】\n\n本発明は、冷媒や潤滑油に長時間曝されるモータに組み込まれて使用されたりするなど、冷媒や潤滑油の存在下を使用環境とするアルカリ珪酸塩被膜を表面に有する希土類系永久磁石の当該被膜の劣化防止方法に関する。\n\n【0002】\n\n【従来の技術】\n\nNd-Fe-B系永久磁石に代表されるR-Fe-B系永久磁石やSm-Fe-N系永久磁石に代表されるR-Fe-N系永久磁石などの希土類系永久磁石は、資源的に豊富で安価な材料が用いられ、かつ、高い磁気特性を有していることから、特にR-Fe-B系永久磁石は今日様々な分野で使用されている。\n\nしかしながら、希土類系永久磁石は反応性の高い希土類金属:Rを含むため、大気中で酸化腐食されやすく、何の表面処理をも行わずに使用した場合には、わずかな酸やアルカリや水分などの存在によって表面から腐食が進行して錆が発生し、それに伴って、磁石特性の劣化やばらつきを招く。さらに、錆が発生した磁石を磁気回路などの装置に組み込んだ場合、錆が飛散して周辺部品を汚染する恐れがある。\n\n従って、希土類系永久磁石の表面にアルカリ珪酸塩被膜を耐食性被膜として形成することが古くから行われている。\n\n【0003】\n\n【発明が解決しようとする課題】\n\nところで、冷蔵庫や空調機などの冷凍機の冷凍サイクルを構成する圧縮機に適用されるモータは、圧力変化が激しく、また、100℃以上の高温にもなる冷媒(密閉型圧縮機においては冷凍機油として潤滑油が通常混合される)に長時間曝されて使用される。従って、例えば、このような過酷な環境で使用されるモータに組み込まれる希土類系永久磁石の表面に形成される耐食性被膜は、長期に渡って劣化することなく高い耐食性を発揮するものであることが必要である。\n\nまた、潤滑油に長時間曝されて使用される自動車部品に適用されるモータにおいても、潤滑油は自動車の使用環境によっては100℃以上の温度変化を伴うことから、過酷な使用環境にある。従って、例えば、このようなモータに組み込まれる希土類系永久磁石の表面に形成される耐食性被膜も、長期に渡って劣化することなく高い耐食性を発揮するものであることが必要である。\n\n【0004】\n\nアルカリ珪酸塩被膜は古くから知られている耐食性被膜の一つであり、日常の環境で使用される希土類系永久磁石の表面に形成される耐食性被膜としては十分な機能を発揮する。しかしながら、冷媒や潤滑油に長時間曝されるモータに組み込まれて使用されたりするなど、冷媒や潤滑油の存在下を使用環境とする希土類系永久磁石の表面に形成される耐食性被膜としてはその機能は十分なものではなく、このような過酷な使用環境においては、早期に被膜の劣化が起こって磁石の表面から被膜が剥離したりして、安定した耐食性を発揮することができなくなる。\n\nそこで本発明は、冷媒や潤滑油の存在下を使用環境とするアルカリ珪酸塩被膜を表面に有\n\nする希土類系永久磁石を当該環境で使用するに際し、当該被膜の劣化を防止して長期に渡って高い耐食性を発揮せしめる方法を提供することを目的とする。\n\n【0005】\n\n【課題を解決するための手段】\n\n本発明者らは、上記の点に鑑みて種々の検討を行った結果、アルカリ珪酸塩被膜中に所定量の熱可塑性樹脂を均一分散させることで、アルカリ珪酸塩と熱可塑性樹脂とが相俟って均質な三次元的ネットワーク構造を形成し、冷媒や潤滑油の存在下を使用環境とする場合においても被膜の劣化を効果的に防止することができることを見出した。\n\n【0006】\n\n本発明は上記の知見に基づいてなされたものであり、本発明のアルカリ珪酸塩被膜の劣化防止方法は、請求項1記載の通り、絶対圧力範囲が0.1MPa〜5MPaで温度範囲が-30℃〜170℃になる冷媒(冷凍機油として潤滑油が混合されていてもよい)の存在下を使用環境とするアルカリ珪酸塩被膜を表面に有する希土類系永久磁石を当該環境で使用するに際し、被膜中に、ソープフリー水溶性エマルジョン樹脂として処理液に分散されていた熱可塑性樹脂を、0.1重量%〜50重量%の含量で均一分散させることを特徴とする。\n\nまた、本発明のアルカリ珪酸塩被膜の劣化防止方法は、請求項2記載の通り、-30℃〜170℃の温度範囲において少なくとも100℃以上の温度変化を伴う潤滑油の存在下を使用環境とするアルカリ珪酸塩被膜を表面に有する希土類系永久磁石を当該環境で使用するに際し、被膜中に、ソープフリー水溶性エマルジョン樹脂として処理液に分散されていた熱可塑性樹脂を、0.1重量%〜50重量%の含量で均一分散させることを特徴とする。\n\nまた、請求項3記載の方法は、請求項1または2記載の方法において、アルカリ珪酸塩被膜が珪酸リチウムを構成成分とすることを特徴とする。\n\nまた、請求項4記載の方法は、請求項3記載の方法において、アルカリ珪酸塩被膜が更に珪酸ナトリウムを構成成分とすることを特徴とする。\n\nまた、請求項5記載の方法は、請求項4記載の方法において、被膜中におけるナトリウム含量が10重量%以下であることを特徴とする。\n\n  また、請求項6記載の方法は、請求項1乃至5のいずれかに記載の方法において、熱可塑性樹脂がアクリルスチレン樹脂であることを特徴とする。\n\nまた、請求項7記載の方法は、請求項1乃至6のいずれかに記載の方法において、磁石単位表面積当たりの被膜付着量が0.01g/m2〜5g/m2であることを特徴とする。\n\nまた、請求項8記載の方法は、請求項1乃至7のいずれかに記載の方法において、50ppm〜1000ppmの微量水分を含む冷媒および/または潤滑油であることを特徴とする。\n\nまた、請求項9記載の方法は、請求項1記載の方法において、冷媒がHFC系冷媒であることを特徴とする。\n\n【0007】\n\n【発明の実施の形態】\n\n本発明のアルカリ珪酸塩被膜の劣化防止方法は、アルカリ珪酸塩被膜中に熱可塑性樹脂を0.1重量%〜50重量%の含量で均一分散させることを特徴とするものであり、かかる構成により、例えば、冷媒や潤滑油に長時間曝されるモータに当該被膜を表面に有する希土類系永久磁石を組み込んで使用しても、当該被膜は長期に渡って劣化することなく高い耐食性を発揮する。\n\n【0008】\n\nアルカリ珪酸塩被膜は、その構成成分として珪酸リチウムが好適に使用される。珪酸リチウムを構成成分とする被膜は、一般式:Li2O·nSiO2で表される珪酸リチウムの水溶液から形成されるものであり、耐食性に優れるという特性を本質的に有する。前記一般式中におけるnはモル比(SiO2/Li2O)を意味し、通常、nが1.5〜10の範囲\n\nにあるものが使用される。\n\n【0009】\n\nアルカリ珪酸塩被膜は、珪酸リチウムのみを構成成分とするものであってもよいが、珪酸リチウムに加えて更に珪酸ナトリウム(水ガラス)や珪酸カリウムや珪酸アンモニウムなどを構成成分とするものであってもよい。中でも珪酸ナトリウムを被膜の構成成分とすることで、被膜形成時の良好な造膜性および磁石との強固な密着性を確保することが可能となる。また、珪酸ナトリウムを被膜の構成成分とすれば、被膜に外傷やクラックなどが存在していても、珪酸ナトリウムが水にわずかに溶解して当該部分に浸透固化し、自己修復的耐食作用を発揮する。珪酸ナトリウムを被膜の構成成分とする場合、被膜中のその含量はナトリウム含量として10重量%以下にすることが望ましく、5重量%以下にすることがより望ましい。10重量%を越えると形成される被膜の耐水性に悪影響を及ぼすことがあり、これに起因して被膜の劣化を招く恐れがあるからである。\n\n【0010】\n\nアルカリ珪酸塩被膜中に均一分散させる熱可塑性樹脂としては、例えば、アクリル樹脂、アクリルスチレン樹脂、ポリエステル樹脂、ポリアミド樹脂、ポリカーボネート樹脂、エポキシ系ウレタン樹脂などが挙げられる。熱可塑性樹脂は被膜中に0.1重量%〜50重量%の含量で均一分散させる。0.1重量%未満であると熱可塑性樹脂を均一分散させる効果が十分に発揮されないからである。一方、50重量%を越えると本質的に被膜の耐油性や耐湿性が劣ったり、被膜と磁石の表面との密着性が劣ったりする場合があることに加え、特に急激な温度変化を伴う場合などにおいて早期に被膜の劣化が起こって磁石の表面から被膜が剥離したりするからである。被膜中に均一分散させる熱可塑性樹脂の含量は、望ましくは1重量%〜30重量%であり、より望ましくは5重量%〜20重量%である。\n\n【0011】\n\nアルカリ珪酸塩被膜中に熱可塑性樹脂を均一分散させる方法としては、例えば、アルカリ珪酸塩水溶液に熱可塑性樹脂を均一分散させた処理液を調製し、この処理液を磁石の表面にスプレー塗装したり、処理液中に磁石を浸漬して浸漬塗装を行ったりした後、60℃〜300℃の温度条件下で1分間〜120分間加熱乾燥することで、アルカリ珪酸塩と熱可塑性樹脂を構成成分とする被膜を形成する方法が挙げられる。アルカリ珪酸塩被膜中に熱可塑性樹脂を均一分散させるためには、処理液中に熱可塑性樹脂を均一分散させることが肝要である。また、大量生産を念頭に置いた場合、調製される処理液は保存安定性に優れ、液寿命(ポットライフ)が長いことが理想である。以上の点に鑑みれば、アルカリ珪酸塩水溶液中に分散させる熱可塑性樹脂は、乳化剤(界面活性剤)が添加されていないソープフリー水溶性エマルジョン樹脂が望ましい。アルカリ珪酸塩水溶液はアルカリ性を呈するので(pH10〜pH13:このようなpHは磁石腐食の問題を生じさせることがなく作業環境上の面においても望ましい)、熱可塑性樹脂を乳化剤(特にノニオン系界面活性剤)が添加された水溶性エマルジョン樹脂として分散させた場合、液中においてエマルジョン破壊が生じて樹脂のゲル化が起こることが多いため、熱可塑性樹脂が均一分散した処理液を調製することが困難となり、その結果、アルカリ珪酸塩被膜に熱可塑性樹脂を均一分散させることができなくなる恐れがあるからである。また、このような処理液は当然のことながら以上のような現象に起因して液寿命の点においても劣るからである。\n\n【0012】\n\n熱可塑性樹脂としてアクリルスチレン樹脂をソープフリー水溶性エマルジョン樹脂としてアルカリ珪酸塩水溶液中に分散させて調製した処理液は、処理液中におけるアクリルスチレン樹脂の均一分散性に優れるようである。従って、この処理液を使用した場合、アルカリ珪酸塩被膜中においてアクリルスチレン樹脂が均一分散し、優れた被膜劣化防止効果を発揮する。なお、アクリルスチレン樹脂とは、スチレンモノマーとアクリル酸エステルモノマーを重合することにより得られる樹脂を意味する。スチレンモノマーとしてはスチレンやα-メチルスチレンなどが使用され得る。アクリル酸エステルモノマーとしては、アクリル酸メチル、アクリル酸エチル、アクリル酸プロピル、アクリル酸ブチル、アクリル酸2-エチルヘキシル、メタクリル酸メチル、メタクリル酸エチル、メタクリル酸プロピ\n\nル、メタクリル酸ブチル、メタクリル酸2-エチルヘキシルなどが使用され得る。好適なアクリルスチレン樹脂としては、スチレン-メタクリル酸メチル共重合体、スチレン-アクリル酸ブチル共重合体、スチレン-メタクリル酸メチル-アクリル酸ブチル共重合体、スチレン-メタクリル酸ブチルなどがある。ソープフリー水溶性エマルジョンタイプのアクリルスチレン樹脂としては、例えば、旭化成工業社製の商品名:F-2000が好適に使用される。\n\n【0013】\n\nアルカリ珪酸塩被膜中に熱可塑性樹脂を均一分散させるための好適な処理液としては、熱可塑性樹脂をソープフリー水溶性エマルジョン樹脂として0.1重量%〜5重量%、望ましくは0.5重量%〜3重量%含み、アルカリ珪酸塩を2重量%〜30重量%含む処理液が挙げられ、この組成範囲内でアルカリ珪酸塩被膜中に均一分散させる熱可塑性樹脂が所望量となるように適宜調整することが望ましい。なお、アルカリ珪酸塩として更に珪酸ナトリウムを処理液中に含ませる場合は、処理液中におけるナトリウム含量が1重量%以下となるようにすることが望ましい。\n\n【0014】\n\n熱可塑性樹脂を0.1重量%〜50重量%の含量で均一分散させたアルカリ珪酸塩被膜は、磁石単位表面積当たりの被膜付着量が0.01g/m2以上(膜厚にして15nm程度以上)となるように形成することが望ましい。0.01g/m2よりも少ないと耐食性被膜としての機能を十分に発揮できない恐れがあるからである。なお、被膜付着量の上限は特段限定されるものではないが、被膜付着量が多すぎると磁石の表面全体に対する均一付着性の確保が困難になり、接着剤をはじめとする有機樹脂との接着性に悪影響を及ぼす恐れがある。従って、以上の観点からは被膜付着量の上限は5g/m2とすることが望ましい。\n\n【0015】\n\n本発明に適用される希土類系永久磁石としては、例えば、R-Fe-B系永久磁石やR-Fe-N系永久磁石などの公知の希土類系永久磁石が挙げられる。中でも、R-Fe-B系永久磁石は、前述のように、磁気特性が高く、量産性や経済性に優れている上に、被膜との優れた密着性を有する点において望ましいものである。これらの希土類系永久磁石における希土類元素(R)は、Nd、Pr、Dy、Ho、Tb、Smのうち少なくとも1種、あるいはさらに、La、Ce、Gd、Er、Eu、Tm、Yb、Lu、Yのうち少なくとも1種を含むものが望ましい。\n\nまた、通常はRのうち1種をもって足りるが、実用上は2種以上の混合物(ミッシュメタルやジジムなど)を入手上の便宜などの理由によって使用することもできる。\n\nさらに、Al、Ti、V、Cr、Mn、Bi、Nb、Ta、Mo、W、Sb、Ge、Sn、Zr、Ni、Si、Zn、Hf、Gaのうち少なくとも1種を添加することで、保磁力や減磁曲線の角型性の改善、製造性の改善、低価格化を図ることが可能となる。また、Feの一部をCoで置換することによって、得られる磁石の磁気特性を損なうことなしに温度特性を改善することができる。\n\nなお、本発明に適用される希土類系永久磁石は、焼結磁石であってもボンド磁石であってもよい。\n\n【0016】\n\n熱可塑性樹脂を0.1重量%〜50重量%の含量で均一分散させたアルカリ珪酸塩被膜を表面に有する希土類系永久磁石は、例えば、冷蔵庫や空調機などの冷凍機の冷凍サイクルを構成する圧縮機に適用されるモータや自動車部品に適用されるモータなどに組み込まれて使用されるが、当該被膜は、HFC系冷媒(R410A、R407C、R134a、R125など)やHCFC系冷媒(R22、R32など)などの各種の冷媒、鉱物油やエステル油やエーテル油などの各種の潤滑油(冷凍機油)に長時間曝されても劣化することなく高い耐食性を発揮する。また、冷媒や潤滑油が50ppm〜1000ppm程度の微量水分を含む場合、当該水分が磁石の腐食を直接的に促進せしめたりすることがあるが、このような場合においても、アルカリ珪酸塩被膜中に熱可塑性樹脂を0.1重量%〜50重\n\n量%の含量で均一分散させることで磁石の腐食を効果的に防止することができる。\n\n【0017】\n\n【実施例】\n\n本発明を以下の実施例によってさらに詳細に説明するが、本発明はこれに限定されるものではない。\n\n【0018】\n\n実施例A:\n\n例えば、米国特許4770723号公報や米国特許4792368号公報に記載されているようにして、公知の鋳造インゴットを粉砕し、微粉砕後に成形、焼結、熱処理、表面加工を行うことによって得られた14Nd-79Fe-6B-1Co組成(at%)の縦30mm×横20mm×高さ3mm寸法の平板状焼結磁石(以下、磁石体試験片と称する)の表面に各種のアルカリ珪酸塩被膜を以下のようにして形成した。\n\n【0019】\n\n1.処理液の調製とその保存安定性\n\nアルカリ珪酸塩として珪酸リチウム(Li2O·nSiO2:n=4.5)と珪酸ナトリウム(Na2O·nSiO2:n=3)を合計10重量%含むアルカリ珪酸塩水溶液(珪酸リチウムと珪酸ナトリウムは重量比が4:1であり、ナトリウム含量は0.4重量%)にソープフリー水溶性エマルジョンタイプのアクリルスチレン樹脂として商品名:F-2000(旭化成工業社製の熱可塑性樹脂)を添加し、スターラーにて混合攪拌することで表1に示す5種類の処理液を調製した(処理液5は樹脂無添加)。得られた処理液は、いずれもpHが11〜12であり、40℃にて1年間保存しても樹脂分散性は良好で優れた保存安定性を示した。\n\n【0020】\n\n【表1】\n\n\n\n【0021】\n\n2.アルカリ珪酸塩被膜の形成と被膜の詳細\n\nアセトンで超音波洗浄することにより表面に付着している磁性粉を除去した磁石体試験片を、調製してから3時間経過後の各処理液中に浸漬した。その後、磁石体試験片を処理液中から引き上げて200℃で20分間加熱乾燥して磁石体試験片の表面にアルカリ珪酸塩被膜を形成した。なお、被膜付着量はエアワイピングのワイピング圧を調整することにより調整した。以上の方法で形成された被膜の詳細について表2に示す。\n\n【0022】\n\n【表2】\n\n\n\n【0023】\n\n3.冷媒に対する効果\n\nアルカリ珪酸塩被膜が表面に形成された磁石体試験片(以下、サンプルと称する)とサンプルが浸かってしまう容量のポリオールエステル系冷媒機油(エステル油)を容量100mLの圧力容器(ポータブルリアクターTVS-1型:耐圧硝子工業社製の商品名)に収容し、容器の蓋を締結した。容器内をロータリーポンプを使用して10分間真空引きした後、HFC系冷媒R410Aを140℃保持時に絶対圧力が5MPaとなるような封入量で封入した。なお、上記の冷凍機油は、その油中水分量が500ppmとなるようにカールフィッシャー水分計を用いて調整したものを使用した。\n\n恒温装置に圧力容器を収容し、140℃にて1000時間保持した後、圧力容器からサンプルを取り出し、各サンプルについて無作為に抽出した10個についてJISH8504に記載の引き剥がし試験方法に準じてセロテープ(登録商標:ニチバン社製)を使用した引き剥がし試験を行い、被膜の劣化の有無を被膜の剥離の有無によって評価した。結果を表2に示す。表2から明らかなように、サンプル1,4,5については10個とも被膜の一部剥離が見られた。しかしながら、サンプル2,3については10個とも被膜の剥離は見られなかった。また、サンプル2,3については、上記の試験前後における磁束変化は0.5%未満と少ないものであった。\n\n【0024】\n\n4.潤滑油に対する効果\n\nサンプル1〜3について、次の実験を行った。市販のオートマチックトランスミッションフリュード(ATF)オイル(Castrol社製)にサンプルを浸漬し、150℃に加熱して150時間保持した後に50℃に急冷して50時間保持するというサイクルを6回行った後、ATFオイル中からサンプルを取り出した。各サンプルについて無作為に抽出した10個の外観検査を行ったところ、サンプル1は10個とも被膜が劣化(脆化)していた。しかしながら、サンプル2,3については10個とも被膜の劣化は見られなかった。電子線マイクロアナライザー(EPMA:島津製作所社製)を使用して磁石体試験片の破断面観察を行ったところ、サンプル1は10個とも一部において炭素拡散が見られ、磁石体試験片の表面が潤滑油により腐食されていることが判明した。しかしながら、サンプル2,3については10個とも炭素拡散は見られず、潤滑油による磁石体試験片の表面の腐食はなかったことから、サンプル2,3の被膜は潤滑油による腐食作用を効果的に防止するものであった。また、サンプル2,3については、上記の試験前後における磁束変化は0.5%未満と少ないものであった。\n\n【0025】\n\n【発明の効果】\n\n本発明によれば、冷媒や潤滑油の存在下を使用環境とするアルカリ珪酸塩被膜を表面に有する希土類系永久磁石を当該環境で使用するに際し、当該被膜の劣化を防止して長期に渡って高い耐食性を発揮せしめる方法を提供される。', '【0001】\n\n技术领域\n\n本发明是一种稀土基永磁体,其在制冷剂或润滑油存在下使用制冷剂或润滑油的碱性硅酸盐涂层,例如掺入制冷剂或润滑油中,并在存在下使用制冷剂或润滑油。该方法涉及防止膜劣化的方法。\n\n【0002】\n\n发明背景\n\n由ND-Fe-B永磁体和稀土的永磁体表示的基于R-Fe-B的永磁体如SM-Fe-N永磁体代表的R-Fe-N永磁体是资源,因为丰富而廉价使用材料并具有高磁性,R-Fe-B永磁体特别用于当今各个领域。\n\n然而,由于基于稀土的永磁体包括高反应性稀土金属:R,易于在大气中腐蚀,并且当使用时没有任何表面处理,小酸,碱和水分等。腐蚀从表面进行了腐蚀,引起锈蚀,随之而来,它导致磁体特性的劣化和变化。此外,如果锈生成的磁铁被结合到诸如磁路的装置中,则锈蚀可以散射到污染的外围部件。\n\n因此,可以在稀土的永磁体的表面上形成碱性硅酸盐涂层作为耐腐蚀涂层。\n\n【0003】\n\n本发明要解决的问题\n\n顺便说一下,施加到压缩机的电动机构成冰箱或空调的制冷循环,例如冰箱或空调器是密封式压缩机中的密封压缩机中的制冷剂油),其严重和高于100的高温℃,作为润滑油通常混合,它是长时间使用的。因此,例如,在这种苛刻的环境中结合在这种恶劣环境中的稀土永磁体的表面上形成的耐腐蚀性膜在于它在很长一段时间内没有降解的情况下发挥高耐腐蚀性。是必要的。\n\n同样在应用于用于长时间暴露于润滑油的汽车零部件的电动机中,润滑油是由于100°C或更高的温度变化而根据汽车的操作环境而更高的操作环境。因此,例如,在这种电动机中结合在这种电动机中的稀土永磁体的表面上形成的耐腐蚀性膜也是必要的,以表现出高耐腐蚀性而不会随着时间的推移而劣化。\n\n【0004】\n\n碱性硅酸盐涂层是旧的耐腐蚀涂层之一,并且表现出足够的功能,作为在日常环境中使用的稀土永磁体的表面上形成的耐腐蚀涂层。然而,由于在稀土永磁体的表面上形成的耐腐蚀性涂层,其在制冷剂或润滑油的存在下使用,例如掺入电动机中以暴露于制冷剂或润滑油长时间的润滑油时间,它形成在稀土永磁体的表面上。该功能不足,并且在这种严重的使用环境中,涂层的劣化早期发生,以从磁体的表面上剥离涂层,并且不能发挥稳定的耐腐蚀性。\n\n因此,本发明具有碱性硅酸盐涂层,其在制冷剂或表面上的润滑油存在下使用。\n\n本发明的一个目的是提供一种防止薄膜劣化并在环境中使用稀土永磁体在长时间内表现出高耐腐蚀性的方法。\n\n【0005】\n\n[解决问题的手段]\n\n由于考虑到上述点进行各种研究,通过均匀地分散在碱硅酸盐涂层中的预定量的热塑性树脂来组合碱性硅酸盐和热塑性树脂。还发现薄膜的劣化可以即使在形成均匀的三维网络结构时也能有效地防止,并且在制冷剂或润滑油存在下用作使用环境。\n\n【0006】\n\n本发明已经基于上述结果进行,并且预防本发明的碱硅酸盐涂层的降解的方法如权利要求1所述,所述温度范围为-30℃,在绝对压力范围内0.1MPa至5MPa。涂层中的聚结时,使用稀土永磁体,用制冷剂在表面上用碱性硅酸盐涂层为170℃(可以混合为冰箱油)。环境。在将其分散在处理液中作为皂化的水溶性乳液树脂热塑性树脂、其特征在于它以0.1%至50重量%的含量均匀分散。\n\n此外,本发明的碱硅酸盐涂层的劣化防止方法如权利要求2所述,并且在-30℃至170的温度范围内的温度变化的温度变化的存在下°C使用环境中使用稀土永磁体在环境中使用碱性硅酸盐涂层时使用环境在涂层中使用环境将其分散在处理液中作为皂化的水溶性乳液树脂热塑性树脂、其特征在于它以0.1%至50重量%的含量均匀分散。\n\n4.根据权利要求3的方法的特征在于,在根据权利要求1或2的方法中,碱性硅酸盐涂层的特征在于硅酸锂是组分。\n\n5.根据权利要求4所述的方法的特征在于,在根据权利要求3所述的方法中,碱性硅酸盐涂层还包含硅酸钠作为组分。\n\n6.根据权利要求5所述的方法的特征在于,在根据权利要求4所述的方法中,薄膜中的钠含量为10重量%或更少。\n\n魔鬼索赔6如权利要求1至1所述的方法5在根据任何方法的方法中,热塑性树脂是丙烯酸苯乙烯树脂。\n\n还,7如权利要求1至1所述的方法6在根据任何磁体单元的方法中,每个地面面积的涂层粘附量为0.01g / m2〜5克/米2它的特征在于它是。\n\n还,8如权利要求1至1所述的方法7在根据任何一种方法中的方法:制冷剂和/或润滑油含有50ppm至1000ppm的痕量水。\n\n还,92.如权利要求1所述的方法的特征在于,制冷剂是基于HFC的制冷剂。\n\n【0007】\n\n发明内容\n\n本发明的碱硅酸盐涂层的劣化预防方法的特征在于,热塑性树脂在碱硅酸盐涂层中均匀地分散在0.1%至50重量%的0.1%至50重量%的含量下,并根据这种构造,例如,即使在长时间暴露于制冷剂或润滑油的电动机中掺入具有涂层的稀土基永磁体,薄膜也不会随着时间的推移施加高耐腐蚀性而不会降解。\n\n【0008】\n\n硅酸锂适合用作碱硅酸盐涂层。含硅酸锂作为组分的涂料是通式:李2o·nsio.2它由由表示的硅酸锂水溶液形成,并且特性基本上具有优异的耐腐蚀性。在通式N中是摩尔比(SIO2/李2o)意味着n通常在1.5到10的范围内\n\n它被用来。\n\n【0009】\n\n在碱硅酸盐膜中,只有硅酸锂可以是组分,但除硅酸锂外,硅酸钠(水玻璃),硅酸钠,硅酸钠,硅酸钠等用作组分。它也很好。其中,通过将硅酸钠设置为薄膜的组分,可以在薄膜形成时确保良好的膜形成性能和磁体之间的强粘合。另外,如果硅酸钠是涂层的组分,即使在薄膜中存在创伤或裂缝,硅酸钠也会略微溶解在水中,渗透到部分,并展示自修复耐腐蚀性。当硅酸钠是涂层的组分时,希望将涂层中的含量以10重量%或更少作为钠含量制备,更优选为5重量%或更少。当超过10重量%时,可能对待形成的膜的耐水性产生不利影响,这可能导致膜的劣化。\n\n【0010】\n\n均匀地分散在碱硅酸盐涂层中的热塑性树脂的实例包括丙烯酸树脂,丙烯酰基树脂,聚酯树脂,聚酰胺树脂,聚碳酸酯树脂,环氧基氨基甲酸酯树脂等。热塑性树脂以0.1%至50重量%的含量均匀地分散在涂层中。如果小于0.1重量%,则不充分地表现出均匀分散热塑性树脂的效果。另一方面,如果超过50重量%,则基本上不如涂层的耐油性和耐水性,并且膜与磁体的表面之间的粘合可以差不多到涂层的表面和磁体的表面,特别是如果存在快速温度变化,这是因为早期发生膜劣化并且涂层从磁体的表面剥离。将要均匀地分散在薄膜中的热塑性树脂的含量理想地是1%至30重量%,更优选为5%至20重量%。\n\n【0011】\n\n作为将热塑性树脂均匀地分散在碱硅酸盐涂层中的方法,例如,制备热塑性树脂均匀地分散在突出溶液中的处理溶液,并将该处理溶液喷在磁体的表面上。在将液体浸渍,浸渍磁铁,并在60℃至300℃的温度条件下加热和干燥1分钟至120分钟后,构成碱硅酸盐和热塑性树脂。一种形成待形成膜的方法。为了将热塑性树脂均匀地分散在碱硅酸盐涂层中,重要的是将热塑性树脂均匀地分散在处理液中。此外,如果考虑到批量生产,则待准备的加工解决方案是液体寿命(盆栽)较长且更长的理想选择。鉴于上述点,分散在碱硅酸盐溶液中的热塑性树脂优选是具有不含乳化剂(表面活性剂)的皂水溶性乳液树脂。由于碱性硅酸盐溶液表现出碱性(pH10至pH13:这种pH不会引起磁体腐蚀的问题),也需要热塑性树脂),并且热塑性树脂乳化(特别是当水溶性乳液分散时的非离子界面活性加入药剂的树脂,难以制备处理的溶液,其中热塑性树脂均匀分散,因为液体脱落发生在液体中,并且通常产生树脂的凝胶化。结果,它是因为有一个热塑性树脂不能均匀地分散在碱硅酸盐涂层中的可能性。此外,这种加工液是由于上述现象引起的上述现象的自然。\n\n【0012】\n\n通过将丙烯烃树脂分散在碱硅酸盐溶液中作为热塑性树脂作为皂化水溶性乳液树脂的丙烯烯树脂在处理液中的均匀分散性中制备的处理溶液。因此,当使用该处理液时,丙烯酸苯乙烯树脂均匀地分散在碱硅酸盐涂层中,并且表现出优异的涂层劣化效果。丙烯酸苯乙烯树脂是指通过聚合苯乙烯单体和丙烯酸酯单体而获得的树脂。苯乙烯或α-甲基苯乙烯可用作苯乙烯单体。作为丙烯酸酯单体,丙烯酸甲酯,丙烯酸甲酯,丙烯酸丙烯酸乙酯,丙烯酸丁酯,2-乙基己酯,甲基丙烯酸甲酯,甲基丙烯酸甲酯,甲基丙烯酸甲酯PRECOPI。\n\n可以使用Bluchorate,甲基丙烯酸甲酯,2-乙基己基甲基丙烯酸甲酯等。合适的丙烯酸苯乙烯树脂包括苯乙烯 - 甲基丙烯酸酯共聚物,苯乙烯 - 丙烯酸共聚物,甲基苯乙烯 - 甲基丙烯酸甲酯 - 丙烯酸丁酯共聚物,苯乙烯 - 甲基丙烯酸丁酯。作为一种无水溶解乳液型丙烯酸苯乙烯树脂,例如,优选使用由Asahi Kasei Industrial Co.,Ltd。制造的商品名F-2000。\n\n【0013】\n\n作为一种合适的处理溶液,用于将热塑性树脂均匀地分散在碱硅酸盐涂层中,0.1%至5重量%的热塑性树脂作为皂化的水溶性乳液树脂,理想的0.5%至3重量%。含有的处理液体含有2%至30重量%的碱硅酸盐,希望适当地调节至所需量的热塑性树脂,该热塑性树脂均匀地分散在该组成范围内的碱性硅酸盐涂层中。。另外,当处理液中进一步含有硅酸钠作为碱性硅酸盐时,所以希望处理液中的钠含量为1重量%或更少。\n\n【0014】\n\n其中热塑性树脂均匀地分散在0.1重量%至50重量%的含量下的碱性硅酸盐涂层,磁铁单元的涂层粘附量为0.01g / m2如上所述,希望形成为约15nm或更大的形式。 0.01克/米2如果它较小,则可能无法充分表现出耐腐蚀膜的功能。尽管涂层粘合量的上限没有特别限制,但是难以将均匀的粘附性固定到磁体的整个表面上,并且与包含粘合剂的有机树脂的粘附可能对性别产生不利影响。因此,从上述观点来看,涂层粘合量的上限为5克/米2是理想的。\n\n【0015】\n\n施加到本发明的稀土基永磁体的实例包括已知的稀土基永磁体,例如基于R-Fe-B基的永磁体和R-Fe-N永磁体。其中,如上所述,如上所述,如上所述,希望它具有优异的粘附性,并且具有优异的质量生产率和经济性。这些稀土永磁体中的稀土元素(R)是Nd,Pr,Dy,Dy,Ho,Tb,Sm和La,Ce,Gd,ER,欧盟,Tm,Yb,Lu中的至少一种,是理想的包括至少一个Y.\n\n另外,尽管它通常足够的RS,两个或更多个混合物(例如混合金属,Dijim等)可以用于实际使用,但为方便起见。\n\n此外,通过添加Al,Ti,V,Cr,Mn,Bi,Nb,Ta,Mo,W,Sb,Ge,Sn,Zr,Ni,Si,Zn,HF和Ga,也是可能的提高胁迫力的大规模和退磁曲线,提高可制造性,降低价格。此外,通过用CO替换FE的一部分,可以提高温度特性而不会影响所得磁体的磁性。\n\n注意,施加到本发明的稀土基永磁体可以是烧结磁体或粘合磁体。\n\n【0016】\n\n具有碱性硅酸盐涂层的稀土永磁体,其均匀地分散在0.1重量%至50重量%的含量,例如,构成冰箱制冷循环的压缩机,例如冰箱或空调将薄膜集成到施加到电动机或汽车部件的电动机中,但薄膜是基于HFC的制冷剂(R410A,R407C,R134A,R125等),基于HCFC的制冷剂(R22,R32等。 )即使暴露于诸如矿物油,酯油和醚油(冰箱油)的各种制冷剂,它也表现出高耐腐蚀性而不会恶化。另外,当制冷剂或润滑油含有约50ppm至1000ppm时,水分可以直接促进磁体的腐蚀,而是在这种情况下,在这种情况下,在碱硅酸盐涂层中。0.1%重量热塑性树脂至50\n\n通过均匀分散在含量%含量下,可以有效地防止磁体的腐蚀。\n\n【0017】\n\n【例子】\n\n尽管将通过以下实施例更详细地描述本发明,但是本发明不限于此。\n\n【0018】\n\n示例a:\n\n例如,如美国专利No.4,770,723或美国专利No.4,792,368中所描述的,通过在细磨后形成,烧结,热处理和表面处理获得14个,14nd。-79Fe-6b -1 CO组合物(以%)垂直30mm×水平20mm×高度3mm尺寸型型烧结磁体(下文中称为磁体样品),其形成了各种碱性硅酸盐涂层。\n\n【0019】\n\n1.制备治疗溶液及其储存稳定性\n\n硅酸锂作为碱硅酸盐(李2o·nsio.2:n = 4.5)和硅酸钠(Na2o·nsio.2含有10重量%的N = 3)(硅酸锂和硅酸钠的碱硅酸盐溶液(4:1重量比,钠含量为0.4重量%),为皂式游离水溶性乳液的丙烯酸苯乙烯树脂类型。产品名称:加入F-2000(Asahi Kasei Industries Industries Co.,Ltd。制造的热塑性树脂)并用搅拌器搅拌以制备表1中所示的五种类型的处理溶液(处理过的液体5无树脂添加) 。所得的处理液具有11至12的pH为11至12,即使在40℃下储存一年,树脂分散性也表现出良好且优异的储存稳定性。\n\n【0020】\n\n【表格1】\n\n\n\n【0021】\n\n2.形成碱性硅酸盐涂层和薄膜细节\n\n通过在制备后3小时后将通过超声波清洗除去粘附到表面的磁粉而获得的磁性型试验片,在每种处理溶液中浸入每个处理溶液中。此后,将磁体试验片拉出处理液体并加热加热并在200℃下干燥20分钟以在磁体样本的表面上形成碱硅酸盐涂层。通过调节空气擦拭的擦拭压力来调节涂层粘合量。以上述方法形成的涂层的细节示于表2中。\n\n【0022】\n\n[表2]\n\n\n\n【0023】\n\n3.对制冷剂的影响\n\n具有多元醇酯制冷剂油(酯油)的压力容器(酯油)的多元醇酯制冷剂油(酯油),具有在表面上形成的磁体试验片的电容(下文称为样品)和形成的样品表面(下文中称为样品)是100ml压力容器类型:击穿电压玻璃工业工业的产品名称),进入容器盖子。在使用旋转泵用旋转泵吸尘器10分钟后,将HFC基制冷剂R410a在140℃下以140℃封闭在冷冻量,使得绝对压力为5MPa。使用卷发型水分计调节上述冰箱油,使油的水含量为500ppm。\n\n在压力容器容纳在恒温装置中并保持在140℃的1000小时后,从压力容器中除去样品,并根据JISH的剥离试验方法拉动10件随机提取的样品。 8504(注册商标:使用Nichiban Co.,Ltd。执行撕裂试验),通过薄膜剥离的存在或不存在进行膜劣化的存在或不存在。结果显示在表2中。如表2所示,对于样品1,4和5,还存在10薄膜剥离。然而,对于样品2和3,观察到薄膜的剥离。此外,对于样品2和3,上述试验前后的磁通量变化小于0.5%。\n\n【0024】\n\n4.对润滑油的影响\n\n对样品1至3进行以下实验。将样品浸入市售的自动变速器(ATF)油(ATF)油(由Castrol制造)中,加热至150℃并在50℃下保持150小时,然后快速冷却至50°C的循环并持续50小时,采样从ATF油中取出。在为每个样品中随机提取10次目视检查后,在10个样品1下滴血1劣化(脆化)。然而,对于样品2和3,观察到不超过10例。通过使用磁体样品的断裂表面进行电子束微量分析仪(EPMA:由Shimadzu Corporation制造),并且样品1位于10个块的一部分,部分和磁体的表面观察到碳扩散标本。发现通过润滑油腐蚀。然而,由于除了样品2和3而未观察到10个碳漫射,并且由于润滑油引起的磁体试验片的表面没有腐蚀,所以样品2和3的膜通过润滑油是有效的。它是某种东西避免。此外,对于样品2和3,上述试验前后的磁通量变化小于0.5%。\n\n【0025】\n\n【发明效果】\n\n根据本发明,当使用具有制冷剂或润滑油的碱基硅酸盐涂层的稀土基永磁体时,在环境中使用具有表面上的表面的稀土基永磁体,劣化预防薄膜并随着时间的推移。提供一种方法以发挥高耐腐蚀性。');
INSERT INTO `os_patent_instruction_text` VALUES (12989, 22818, 'DESCRIPTION\n\nIRON-BASED RARE EARTH ALLOY NANOCOMPOSITE MAGNET AND METHOD FOR PRODUCING THE SAME\n\nTECHNICAL FIELD\n\nThe present invention generally relates to a method for producing a permanent magnet that is applicable for use in motors and actuators of various types. More particularly, the present invention relates to a method for producing an iron-based rare earth alloy nanocomposite magnet including multiple ferromagnetic phases.\n\nBACKGROUND ART\n\nRecently, it has become more and more necessary to further improve the performance of, and further reduce the size and weight of, consumer electronic appliances, office automation appliances and various other types of electric equipment. For these purposes, a permanent magnet for use in each of these appliances is required to maximize its performance to weight ratio when operated as a magnetic circuit. For example, a permanent magnet with a remanence Br of about 0.5 T or more is now in high demand. Hard ferrite magnets have been used widely because magnets of this type are relatively inexpensive. However, the hard ferrite magnets cannot achieve the high remanence Br of about 0.5\n\nT or more.\n\nAn Sm-Co based magnet, produced by a powder metallurgical process, is currently known as a typical permanent magnet that achieves the high remanence Br of about 0.5 T or more. However, the Sm-Co based magnet is expensive, because Sm and Co are both expensive materials.\n\nExamples of other high-remanence magnets include an Nd-Fe-B based sintered magnet produced by a powder metallurgical process and an Nd-Fe-B based rapidly solidified magnet produced by a melt quenching process. An Nd-Fe-B based sintered magnet is disclosed in Japanese Laid-Open Publication No. 59-46008, for example, and an Nd-Fe-B based rapidly solidified magnet is disclosed in Japanese Laid-Open Publication No. 60-9852, for instance.\n\nThe Nd-Fe-B based sintered magnet is mainly composed of relatively inexpensive Fe (typically at about 60 wt% to about 70 wt% of the total weight), and is much less expensive than the Sm-Co based magnet. Nevertheless, it is still expensive to produce the Nd-Fe-B based sintered magnet. This is partly because huge equipment and a great number of manufacturing and processing steps are required to separate and purify, or to obtain by reduction reaction, Nd, which usually accounts for about 10 at% to about 15 at% of the magnet. Also, a powder metallurgical process \n\nnormally requires a relatively large number of manufacturing and processing steps by its nature.\n\nCompared to an Nd-Fe-B based sintered magnet formed by a powder metallurgical process, an Nd-Fe-B based rapidly solidified magnet can be produced at a lower cost by a melt quenching process. This is because an Nd-Fe-B based rapidly solidified magnet can be produced through relatively simple process steps of melting, melt quenching and heat treating. However, to obtain a permanent magnet of melt-quenched materials in bulk, a bonded magnet should be formed by compounding a magnet powder, made from a rapidly solidified alloy, with a resin binder. Accordingly, the magnet powder normally accounts for at most about 80 volume % of the molded bonded magnet. Also, a rapidly solidified alloy, formed by a melt quenching process, is magnetically isotropic.\n\nFor these reasons, an Nd-Fe-B based rapidly solidified magnet produced by a melt quenching process has a remanence Br lower than that of a magnetically anisotropic Nd-Fe-B based sintered magnet produced by a powder metallurgical process.\n\nAs disclosed in Japanese Laid-Open Publication No. 1-7502, a technique of adding, in combination, at least one element selected from the group consisting of Zr, Nb, Mo, \n\nHf, Ta and W and at least one more element selected from the group consisting of Ti, V and Cr to the material alloy effectively improves the magnetic properties of an Nd-Fe-B based rapidly solidified magnet. When these elements are added to the material alloy, the magnet has increased coercivity HcJ and anticorrosiveness. However, the only known effective method of improving the remanence Br is increasing the density of the bonded magnet. Also, where an Nd-Fe-B based rapidly solidified magnet includes a rare earth element at about 6 at% or more, a melt spinning process, in which a melt of its material alloy is ejected against a chill roller, has often been used in the prior art to rapidly cool and solidify the material alloy at an increased rate.\n\nAs for an Nd-Fe-B based rapidly solidified magnet, an alternative magnet material was proposed by R. Coehoorn et al., in J. de Phys, C8, 1998, pp. 669-670. The Coehoorn material has a composition including a rare earth element at a relatively low mole fraction (i.e., around Nd3.8Fe77.2 B19, where the subscripts are indicated in atomic percentages) and an Fe3B type compound as its main phase. This permanent magnet material is obtained by heating and crystallizing an amorphous alloy that has been prepared by a melt quenching process. Also, the crystallized material \n\nhas a metastable structure in which soft magnetic Fe3B and hard magnetic Nd2Fei4B phases coexist and in which crystal grains of very small sizes (typically on the order of several nanometers) are distributed finely and uniformly as a composite of these two crystalline phases. For that reason, a magnet made from such a material is called a \"nanocomposite magnet\". It was reported that such a nanocomposite magnet has a remanence Br as high as about 1 T or more. But the coercivity Hcj thereof is relatively low, i.e., from about 160 kA/m to about 240 kA/m. Accordingly, this permanent magnet material is applicable only when the operating point of the magnet is about 1 or more.\n\nIt has been proposed that various metal elements be added to the material alloy of a nanocomposite magnet to improve the magnetic properties thereof. See, for example, Japanese Laid-Open Publication No . 3-261104, United States Patent No. 4,836,868, Japanese Laid-Open Publication No. 7-122412, PCT International Publication No. WO 003/03403 and W. C. Chan et. al., \"The Effects of Refractory Metals on the Magnetic Properties of a-Fe/ R2Fei4B -type Nanocomposites\", IEEE Trans. Magn. No. 5, INTERMAG. 99, Kyongiu, Korea, pp. 3265-3267, 1999. However, none of these proposed techniques are reliable enough to always \n\nobtain a sufficient \"characteristic value per cost\". More specifically, none of the nanocomposite magnets produced by these techniques realize coercivity high enough to actually use it in various applications. Thus, none of these magnets can exhibit commercially viable magnetic properties .\n\nDISCLOSURE OF INVENTION\n\nIn order to overcome the problems described above, preferred embodiments of the present invention provide a method for producing an iron-based alloy permanent magnet with excellent magnetic properties at a low cost and also provide a permanent magnet that achieves a coercivity Hcj that is high enough to actually use the magnet in various applications (e.g., Hcj^about 550 kA/m) while maintaining a remanence Br of about 0.80 T or more.\n\nAn iron-based rare earth alloy nanocomposite magnet according to a preferred embodiment of the present invention has a composition represented by the general formula (Fei_mTm) ioo-x-y-z QxRyTiz, where T is at least one element selected from the group consisting of Co and Ni, Q is at least one element selected from the group consisting of B and C, and R is at least one rare earth element including substantially no La or Ce. The mole fractions x, y, z and m preferably satisfy the inequalities of: 10 \n\nat%2Ti4Q type compound at least partially.\n\nIn a preferred embodiment of the present invention, the mole fractions x, y and z satisfy the inequalities of: 10 at%2Ti4Q type compound have a Ti concentration of about 2 at% or less while a Ti concentration in the grain\n\nboundary between the crystal grains of the R2T14Q type\n\ncompound is higher than the Ti concentration inside the crystal grains of the R2T14Q type compound.\n\nSpecifically, the R2Ti4Q Ti concentration in the grain boundary between the crystal grains of the R2Ti4Q type compound is preferably about 7 at% or more.\n\nIn yet another preferred embodiment, the ferromagnetic iron-based boride has an average size of about 50 nm or less as measured along the thickness of the grain boundary.\n\nIn yet another preferred embodiment, the ferromagnetic iron-based boride is present in the form of a film having an average thickness of about 20 nm or less over the grain boundary between the crystal grains of the R2Ti4Q type compound.\n\nIn yet another preferred embodiment, the ferromagnetic iron-based boride is dispersed in the grain boundary between the crystal grains of the R2Ti4Q type compound and has an average major axis length of about 1 nm to about 50 nm.\n\nIn yet another preferred embodiment, on an arbitrary cross section of the magnet, the crystal grains of the R2T14Q type compound have an average size greater than an average size of the ferromagnetic iron-based boride.\n\nIn yet another preferred embodiment, the mole fractions x and z satisfy the inequalities of 10 at%r of about 0.80 T or more, a maximum energy product (BH)max of about 100 kJ/ m3 or more and a coercivity Hcj of about 480 kA/m or more.\n\nMore specifically, the magnet preferably has hard magnetic properties as represented by a remanence Br of about 0.85 T or more and a maximum energy product (BH)max of about 120 kJ/m3 or more.\n\nA bonded magnet according to a preferred embodiment of the present invention is obtained by molding a magnet powder, comprising a powder of the iron-based rare earth \n\nalloy magnet according to any of the preferred embodiments of the present invention described above, with a resin binder.\n\nBRIEF DESCRIPTION OF DRAWINGS\n\nFIGS. 1A and IB schematically illustrate the structure of an iron-based rare earth alloy nanocomposite magnet according to a preferred embodiment of the present invention.\n\nFIG. 2A is a cross-sectional view illustrating an overall arrangement for a melt quenching machine for use to make a rapidly solidified alloy for the iron-based rare earth alloy magnet according to the preferred embodiment of the present invention; and\n\nFIG. 2B illustrates part of the machine shown in FIG. 2A, where a melt is quenched and rapidly solidified, to a larger scale.\n\nFIG. 3 is a graph showing the demagnetization curve of a sample representing an example of preferred embodiments of the present invention.\n\nFIG. 4 is a graph showing the X-ray diffraction patterns of the sample that has been annealed.\n\nFIG. 5 is a photograph that was taken for an example of preferred embodiments of the present invention at a power of about 125,000 by observing the micro metal \n\nstructure of the annealed sample with a transmission electron microscope.\n\nFIG. 6 is a photograph showing an FIM image that was taken for the example of preferred embodiments of the present invention by observing the metal structure of a needle-like sample with an atom probe field-ion microscope (APFIM).\n\nFIG. 7 is a graph showing the cumulative concentration profiles of Nd, B and Ti as measured in the depth direction for sample No. 2.\n\nFIG. 8A is a graph showing relationships between the Ti concentrations and the Nd concentrations in the regions Nos. 1 to 12 shown in FIG. 7; and\n\nFIG. 8B is a graph showing relationships between the Ti concentrations and the B concentrations in the regions Nos. 1 to 12 shown in FIG. 7.\n\nBEST MODE FOR CARRYING OUT THE INVENTION\n\nAn iron-based rare earth alloy magnet according to a preferred embodiment of the present invention is a nanocomposite magnet formed by rapidly cooling and solidifying a melt of a rare earth-iron-boron based material alloy including Ti. This rapidly solidified alloy includes nanocrystalline phases. If necessary, the rapidly solidified alloy is heated and further crystallized.\n\nGenerally speaking, if the mole fraction of a rare earth element R is set lower than about 10 at%, then an R2Fei4B phase, contributing to hard magnetic properties, decreases its volume percentage. In addition, an a-Fe phase nucleates earlier than the R2Fe44B phase, and easily increases its grain size excessively. Since the a-Fe phase has high magnetization, the magnetization of the resultant magnet increases as a whole. However, since the magnet includes the excessively large a-Fe phase, the loop squareness of its demagnetization curve deteriorates and its coercivity also decreases. In the prior art, one tried to increase the coercivity by decreasing the size of each and every crystalline phase (including the a-Fe phase that easily has an excessively large size) with the addition of some metal element. However, the resultant coercivity was still insufficient.\n\nThe present inventors discovered and confirmed via experiments that if an appropriate amount of Ti is added to a material alloy including a rare earth element R at less than about 10 at% and B at about 10 at% to about 17 at%, then crystal grains of an R2Ti4Q type compound and then an iron-based boride can be nucleated earlier and faster than the Fe phase in the molten alloy being cooled and solidified with the nucleation and excessive grain growth of the a-Fe \n\nprevented. The present inventors also discovered that by nucleating and growing the hard magnetic phase faster and earlier than the soft magnetic phase in this manner, nuclei of the iron-based boride with ferromagnetic properties can be created in the grain boundary between the R2Ti4Q crystals. Accordingly, if the ferromagnetic iron-based boride is grown in the crystallization process of the material alloy so as to cover the surface of the R2Ti4Q crystal grains without increasing the interfacial energy, then the iron-based boride, grown from the multiple nuclei, are dispersed temporarily but will soon be partially combined together on the surface of the R2Ti4Q crystal grains. As a result, the iron-based boride will form a sort of film or layer in the end. In this manner, the surface of the R2Ti4Q crystal grains is covered with the film of the iron-based boride at least partially.\n\nPreferred embodiments of the present invention provide a nanocomposite structure in which the R2Ti4Q crystal grains serving as a hard magnetic phase are separated from each other by a thin film of the iron-based boride serving as a soft magnetic phase (with an average thickness of about 20 nm or less) and/or fine particles thereof (with a major-axis size of about 1 nm to about 50 nm) . That is to say, along the grain boundary of the R2T14Q \n\ncrystal grains, the soft and hard magnetic phases are magnetically coupled together through exchange interactions. The exchange coupling between the hard and soft magnetic phases is produced mainly in their interface. Since the soft magnetic phase is present in the form of a film to cover the hard magnetic phase, the magnetic moment of most of the soft phase is magnetically constrained and therefore excellent magnetic properties are achievable. As a result, a structure that can function as an exchange spring magnet is formed. The present inventors also discovered that this magnetic coupling has been weakened by a feeble magnetic phase or a non-magnetic phase existing in the grain boundary.\n\nFIGS. 1A and IB schematically illustrate the structure of a nanocomposite magnet according to a preferred embodiment of the present invention. Specifically, FIG. 1A is a cross-sectional view schematically illustrating the R2Fei4B and grain boundary phases in the magnet of this preferred embodiment. As shown in FIG. 1A, an iron-based boride (Fe-B) is present in the grain boundary phase. FIG. IB is a perspective view illustrating the R2Fei4B phase and the iron-based boride. As shown in FIG. IB, the iron-based boride is finely dispersed, and/or combined together like a film or layer, in the grain \n\nboundary, thereby partially covering the surface of the R2Fei4B phase. In other words, the iron-based boride existing in the grain boundary of the R2Fei4B phase is partly continued and partly discontinued.\n\nIn this manner, according to preferred embodiments of the present invention, an iron-based boride with ferromagnetic properties is grown in the grain boundary or sub-boundary between the R2T44Q crystal grains so as to cover the surface of the R2Ti4Q crystal grains at least partially. As a result, a unique nanocomposite magnet structure, in which a fine (or thin) iron-based boride is present in the grain boundary or sub-boundary between the R2Ti4Q crystal grains, can be obtained. The term \"grain boundary\" used herein refers not only to \"grain boundary\" in the strict sense but also to \"sub-boundary\".\n\nThe results of experiments conducted by the present inventors revealed that particularly when the iron-based boride with R2Ti4Qf erromagnetic properties formed a thin film over the surface of R2Ti4Q crystal grains in the grain boundary thereof, a nanocomposite magnet with excellent magnetic properties could be obtained. In preferred embodiments of the present invention, the soft magnetic phase, existing thinly in the grain boundary, preferably \n\naccounts for about 10 vol% to about 40 vol% of the entire\n\nmagnet.\n\nA structure like this is realized by nucleating and growing the R2T14Q crystal grains faster and earlier than crystal grains of other soft magnetic phases through the addition of Ti and then by precipitating the iron-based boride in the gap (or in the grain boundary) between the R2T14Q crystal grains. That is to say, it is not until the R2T14Q crystal grains have been sufficiently nucleated and grown that the soft magnetic phase is allowed to grow in the grain boundary thereof. Accordingly, the grain growth of the soft magnetic phase in the grain boundary portion is constrained by the R2T14Q crystal grains. The crystal lattice of the soft magnetic phase that has been formed in this manner does not match with that of the hard magnetic phase. The structure of this nanocomposite magnet is different from that of an Fe3B / R2Fe14B type nanocomposite magnet in this respect also. Specifically, in an Fe3B / R2Fe14B type nanocomposite magnet, including about 2 at% to about 6 at% of rare earth element R and about 15 at% to about 20 at% of boron (B) , soft magnetic Fe3B phase and hard magnetic R2Fei4B phase are formed through a phase transformation process. That is to say, the soft magnetic Fe3B phase precipitates before the hard magnetic R2Fei4B \n\nphase nucleates. In that case, the soft magnetic phase cannot be present in the film shape. Thus, the crystal lattice of Fe3B is observed as partially matching with that of R2Fex4B.\n\nIn the preferred embodiments of the present invention, as R2T14Q crystal grains nucleate and grow, Ti, which has been distributed substantially uniformly in a molten alloy, is forced into, and condensed in, the grain boundary of the R2Ti4Q crystal grains. The present inventors believe the reason is that Ti cannot exist in a chemically stabilized state inside the R2Ti4Q crystal grains. According to the experimental data collected by the present inventors, the Ti condensed in the grain boundary phase existed at a concentration of about 5 at% to about 30 at% in the grain boundary. However, it was not clear exactly in what form Ti existed there.\n\nHereinafter, an iron-based rare earth alloy magnet according to preferred embodiments of the present invention will be described in further detail.\n\nIn various preferred embodiments of the present invention, the iron-based rare earth alloy magnet preferably has a composition represented by the general formula: (Fei_mTm) ioo-x~y-z QxRyTiz. In this formula, T is preferably at least one element selected from the group consisting of Co \n\nand Ni, Q is preferably at least one element selected from the group consisting of B and C, and R is preferably at least one rare earth element including substantially no La or Ce. The mole fractions x, y, z and m preferably satisfy the inequalities of 10 at%2Ti4Q type compound and a ferromagnetic iron-based boride that have been magnetically coupled together through exchange interaction. The ferromagnetic iron-based boride has preferably grown to form a film in the grain boundary between the R2T14Q crystal grains and cover the surface of the R2T14Q crystal grains as a whole.\n\nThe iron-based rare earth alloy magnet according to this preferred embodiment of the present invention includes a rare earth element at less than about 10 at%. However, the iron-based boride with ferromagnetic properties has precipitated in the grain boundary of the main phase. Accordingly, the magnet can exhibit comparable (or even increased) magnetization (or remanence Br) and improved loop squareness of the demagnetization curve compared to a magnet that does not contain Ti.\n\nIn the iron-based rare earth alloy magnet according to the preferred embodiment of the present invention, the crystal \n\ngrains of its main phase with ferromagnetic properties are thinly covered with the iron-based boride as a soft magnetic phase. Accordingly, the crystal grains of these two main phases are magnetically coupled together through exchange interaction. Consequently, the alloy as a whole can exhibit excellent loop squareness in its demagnetization curve.\n\nThe iron-based rare earth alloy magnet according to this preferred embodiment of the present invention preferably includes iron-based borides and a-Fe that have saturation magnetizations approximately equal to, or even higher than, that of the R2T14Q (typically, NdzFe^B) phase. Examples of the iron-based borides include Fe3B (with a saturation magnetization of about 1.5 T) and Fe23B6 (with a saturation magnetization of about 1.6 T) . In this case, the Nd2Fei4B phase has a saturation magnetization of about 1.6 T and the a-Fe phase has a saturation magnetization of about 2.1 T.\n\nNormally, where the mole fraction x of B is greater than about 10 at% and the mole fraction y of the rare earth element R is about 6 at% to about 8 at%, R2Fe23B3 is produced unless Ti is added. However, even when a material alloy with such a composition is used, the addition of Ti can produce R2Fei4B, Fe23B6 and Fe3B , not R2Fe23B3, in the \n\npreferred embodiment of the present invention. These iron-based borides contribute to increasing the magnetization. It should be noted that \"Fe3B \" herein includes Fe33.5 B, which is hard to distinguish from Fe3B .\n\nIn various preferred embodiments of the present invention, the rapidly solidified alloy has either a structure in which almost no a-Fe phase with an excessively large grain size has precipitated but an R2T14Q type phase with a very small grain size exists instead or a structure in which an R2Ti4Q type phase with a very small grain size and an amorphous phase coexist. As used herein, the term \"amorphous phase\" means not only a phase in which the atomic arrangement is sufficiently disordered, but also a phase including embryos for crystallization, extremely small crystalline regions (size: several nanometers or less), and/or atomic clusters. More specifically, the term \"amorphous phase\" refers to any phase having a crystal structure that cannot be defined by X-ray diffraction analysis or TEM observation. Stated otherwise, any phase having a crystal structure clearly identifiable by X-ray diffraction analysis or TEM observation will be herein referred to as a \"crystalline phase\".\n\nIn the prior art, if a molten alloy with a composition similar to that of the preferred embodiments of the present \n\ninvention (i.e., a composition including all the elements included in the inventive composition but Ti) is cooled relatively slowly, the resultant alloy will have a structure in which a lot of a-Fe phase has grown coarsely. Thus, when the alloy is heated and crystallized after that, the a-Fe phase will increase its grain size excessively. Once soft magnetic phases, including the a-Fe phase, have grown too much, the magnetic properties of the alloy deteriorate significantly, thus making it virtually impossible to produce a quality permanent magnet from such an alloy.\n\nOnly when Ti is added to the material alloy, the hard magnetic phase will nucleate and grow faster and earlier than any other phase and then an iron-based boride with ferromagnetic properties will precipitate in the grain boundary between the crystal grains of the main phase. Thereafter, the iron-based boride precipitated will soon be partially combined together to form a continuous film. As a result, a structure in which the surface of the crystal grains of the main phase is thinly covered with that film is formed.\n\nIf any of the other metal elements (e.g., Nb, V, Cr, etc. ) , excluding Ti, is added, the grain growth of the a-Fe phase advances remarkably in a relatively high temperature \n\nrange in which the a-Fe phase grows rapidly, and the magnetization direction of the a-Fe phase cannot be effectively constrained by the exchange coupling between the a-Fe and hard magnetic phases. As a result, the demagnetization curve will have greatly deteriorated loop squareness. It should be noted that even if Nb, Mo or W is added instead of Ti, good hard magnetic properties, including superior loop squareness of the demagnetization curve, are achievable by thermally annealing the alloy in a relatively low temperature range where no a-Fe phase precipitates. In an alloy that has been annealed at such a low temperature, however, R2Fei4B crystalline particles would be dispersed in non-magnetic amorphous phases and the alloy does not have large remanence Br. Also, if the alloy is annealed at an even higher temperature, then the a-Fe phase nucleates and grows out of the amorphous phases. Unlike the situation where Ti is added, the a-Fe phase rapidly grows and increases its grain size excessively after its nucleation. As a result, the magnetization direction of the a-Fe phase cannot be effectively constrained anymore by the exchange coupling between the a-Fe and hard magnetic phases, and the loop squareness of the demagnetization curve deteriorates considerably.\n\nOn the other hand, where V or Cr is added instead of Ti, the magnetic moment of these additive metal elements is coupled anti-ferromagnetically to the magnetic moment of Fe to form a solid solution, thus decreasing the magnetization significantly.\n\nIn contrast, where Ti is added to the material alloy, the crystallization kinetics of the a-Fe phase is slowed down, i.e., it takes a longer time for the a-Fe phase to nucleate and grow. Thus, the present inventors believe that the Nd2Fei4B phase starts to nucleate and grow before the a-Fe phase has grown coarsely. For that reason, where Ti is added, crystal grains of the Nd2Fe14B phase can be grown sufficiently and distributed uniformly before the a-Fe phase has grown too much.\n\nAccordingly, only when Ti is added, the crystal grain coarsening of the a-Fe phase is minimized as intended, and therefore, iron-based borides with ferromagnetic properties can be obtained. Furthermore, Ti, as well as B and C, plays an important role as an element that delays the crystallization of Fe initial crystals (i.e., y~Fs that will be transformed into a-Fe) and thereby facilitates the production of a supercooled liquid during the melt quenching process. Thus, even if a melt of the material alloy including Ti is rapidly cooled and solidified at a \n\nrelatively low cooling rate of about 102 °C/sec to about 105 °C/sec, a rapidly solidified alloy, in which the a-Fe phase with an excessively large grain size has not precipitated but which includes the nanocrystalline R2Fei4B phase at about 60 vol% or more (and sometimes iron-based borides as well), can be obtained.\n\nPreferred composition\n\nQ may be either B (boron) only or a combination of B and C (carbon). The ratio of C to Q is preferably about 0.25 or less.\n\nIf the mole fraction x of Q is about 10 at% or less, then it is difficult to make the desired rapidly solidified alloy, in which the nanocrystalline R2Fei4B and amorphous phases coexist, at the low cooling rate of about 102 °C/sec to about 104 °C/sec. Also, even if the rapidly solidified alloy is annealed after that, the resultant Hcj of the alloy will be less than about 400 kA/m. In addition, a strip casting process, which is one of the most cost-effective techniques among various rapid cooling methods, cannot be adopted in that case, and the price of the resultant permanent magnet product increases unintentionally. On the other hand, if the mole fraction x of Q exceeds about 17 at%, then the iron-based boride will start to nucleate almost simultaneously with the R2Fei4B phase, and will grow\n\nexcessively in the end.\n\nnanocomposite structure, in which the iron-based boride phase is distributed uniformly in, or present in the form of a film over, the grain boundary of the R2Fei4B phase, cannot be obtained, and the resultant magnetic properties deteriorate.\n\nIn view of these considerations, the mole fraction x of Q is preferably greater than about 10 at% and equal to or less than about 17 at%. A more preferable upper limit of x is about 16 at% and an even more preferable upper limit of x is about 15 at%.\n\nThe (atomic) ratio p of C to Q is preferably from about 0 to about 0.25. To achieve the effects expected from the additive C, the C ratio p is preferably equal to or greater than about 0.01. The reason is as follows. If p is much smaller than about 0.01, then almost no expected effects are achievable even if C is added. On the other hand, if p is far greater than about 0.25, then the volume percentage of the a-Fe phase produced increases too much, thereby causing deterioration of the resultant magnetic properties. The lower limit of the ratio p is preferably about 0.02, while the upper limit thereof is preferably about 0.20. More preferably, the ratio p is from about 0.02 to\n\nabout 0.17.\n\nR is at least one element selected from the rare earth elements (including yttrium). Preferably, R includes substantially no La or Ce. This is because if La or Ce is included, R (typically Nd) included in the R2Fe14B phase is replaced with La or Ce, thus decreasing the coercivity and deteriorating the loop squareness of the demagnetization curve. However, the magnetic properties will not be affected so seriously if a very small percentage (i.e., about 0.5 at% or less) of La or Ce exists as an inevitably contained impurity. Therefore, the phrase \"substantially no La (Ce)\" or \"substantially excluding La (Ce)\" herein means that the content of La (Ce) is about 0.5 at% or less. More specifically, R preferably includes Pr or Nd as an indispensable element, a portion of which may be replaced with Dy and/or Tb. If the mole fraction y of R is less than about 6 at%, then fine grains with the nanocrystalline R2Fei4B structure, which is needed for realizing the coercivity, do not crystallize sufficiently and the desired high coercivity Hcj of about 480 kA/m or more cannot be obtained. On the other hand, if the mole fraction y of R is equal to or greater than about 10 at%, then the percentage of the iron-based borides with ferromagnetic properties and a-Fe phase decreases but that of the R-rich non-magnetic phases increases instead. As a result, the \n\nmagnetically with the soft magnetic phase existing in the grain boundary through exchange interaction. As a result, excellent hard magnetic properties are achieved. It should be noted that the volume percentage of each constituent phase such as the R2Fei4B phase is herein measured by Mossbauer spectroscopy.\n\nTo achieve the effects described above, Ti is indispensable. The additive Ti increases the coercivity Hcj, remanence Br and maximum energy product (BH)max and improves the loop squareness of the demagnetization curve.\n\nIf the mole fraction z of Ti is less than about 0.5 at%, then those effects expected from the additive Ti cannot be achieved fully. Nevertheless, if the mole fraction z of Ti exceeds about 6 at%, then the volume percentage of the non-magnetic phases, remaining in the alloy even after the alloy has been heated and crystallized, increases and the remanence Br likely drops. Also, if the mole fraction z of Ti exceeds about 6 at%, TiB2 is produced in the molten alloy, thus making it difficult to carry out the melt quenching process as intended. In view of these considerations, the mole f', '描述\n\n铁基稀土合金纳米复合磁体及其制备方法\n\n技术领域\n\n本发明总体上涉及一种用于制造永磁体的方法,该方法适用于各种类型的电动机和致动器。更具体地,本发明涉及一种用于制造包括多个铁磁相的铁基稀土合金纳米复合磁体的方法。\n\n背景技术\n\n近来,变得越来越有必要进一步改善消费电子设备,办公自动化设备和各种其他类型的电气设备的性能,并进一步减小其尺寸和重量。为了这些目的,需要在这些电器的每一种中使用的永磁体在作为磁路工作时最大化其性能重量比。例如,剩磁为B的永磁体r 现在对约0.5 T或更高的需求量很大。硬质铁氧体磁体已被广泛使用,因为这种类型的磁体相对便宜。但是,硬铁氧体磁体无法实现高剩磁Br 约0.5\n\nT或更多。\n\n目前,通过粉末冶金工艺生产的基于Sm-Co的磁体是获得高剩磁B的典型永磁体。r 约为0.5 T或更多。然而,基于Sm-Co的磁体是昂贵的,因为Sm和Co都是昂贵的材料。\n\n其他高剩磁磁体的实例包括通过粉末冶金工艺生产的Nd-Fe-B基烧结磁体和通过熔融淬火工艺生产的Nd-Fe-B基快速凝固磁体。例如,在日本特许公开第59-46008号中公开了一种基于Nd-Fe-B的烧结磁体,并且在日本特许公开第60-9852号中公开了一种基于Nd-Fe-B的快速凝固磁体。 , 例如。\n\nNd-Fe-B基烧结磁体主要由相对便宜的Fe(通常占总重量的约60wt%至约70wt%)组成,并且比Sm-Co基磁体便宜得多。然而,生产基于Nd-Fe-B的烧结磁体仍然很昂贵。这部分是因为需要大量的设备以及大量的制造和加工步骤来分离和纯化或通过还原反应获得Nd,Nd通常占磁体的约10at%至约15at%。另外,粉末冶金工艺\n\n通常,由于其性质,通常需要相对大量的制造和加工步骤。\n\n与通过粉末冶金工艺形成的基于Nd-Fe-B的烧结磁体相比,可以通过熔融淬火工艺以较低的成本生产基于Nd-Fe-B的快速凝固磁体。这是因为可以通过相对简单的熔融,熔融淬火和热处理工艺步骤来生产基于Nd-Fe-B的快速凝固磁体。然而,为了获得散装熔融淬火材料的永磁体,应该通过将由快速凝固的合金制成的磁体粉末与树脂粘合剂混合来形成粘结磁体。因此,磁体粉末通常占模制粘结磁体的最多约80体积%。而且,通过熔融淬火工艺形成的快速凝固的合金是磁各向同性的。\n\n由于这些原因,通过熔融淬火工艺生产的基于Nd-Fe-B的快速凝固磁体具有剩磁Br 低于通过粉末冶金法生产的磁各向异性的Nd-Fe-B基烧结磁体。\n\n如日本特开平1-7502号公报中公开的那样,将选自Zr,Nb,Mo,\n\nHf,Ta和W以及从Ti,V和Cr组成的组中选择的至少一种以上元素对材料合金有效地改善了基于Nd-Fe-B的快速凝固磁体的磁性能。当将这些元素添加到材料合金中时,磁体的矫顽力H增加cJ 和防腐性。但是,唯一已知的提高剩磁B的有效方法r正在增加粘结磁铁的密度。另外,在基于Nd-Fe-B的快速凝固的磁体中,稀土元素的含量为约6at%以上时,通常使用熔融纺丝法,该熔融纺丝法是将其材料合金的熔融液喷出到冷却辊上。在现有技术中,可以快速提高材料的冷却和凝固速度。\n\n对于基于Nd-Fe-B的快速凝固磁体,R.Coehoorn等人在J.de Phys,C8,1998,pp.669-670中提出了一种替代磁体材料。 Coehoorn材料的成分包括相对较低摩尔分数(即Nd左右)的稀土元素3。8Fe77.2 B19,其中下标以原子百分比表示)和Fe3B型化合物为主要相。该永磁体材料是通过加热和结晶已经通过熔融淬火工艺制备的非晶态合金而获得的。另外,结晶物质\n\n具有亚稳结构,其中软磁性铁3B和硬磁钕2i4B相共存,并且其中非常小的尺寸(通常为几纳米量级)的晶粒作为这两个结晶相的复合物精细而均匀地分布。因此,将由这种材料制成的磁体称为\"纳米复合磁体\"。据报道,这种纳米复合磁体的剩磁为B。r 高达约1 T或更高。但是矫顽力Hc其j相对较低,即从约160kA / m至约240kA / m。因此,仅当磁体的工作点为大约1以上时,该永磁体材料才适用。\n\n已经提出将各种金属元素添加到纳米复合磁体的材料合金中以改善其磁性。参见,例如,日本特许公开公报。美国专利No.3-261104,美国专利No.4,836,868,日本专利公开No.7-122412,PCT国际专利No.WO 003/03403和W.C.Chan等人。等,\"难熔金属对a-Fe / R磁性的影响2i4B型纳米复合材料\",IEEE Trans。真是的第5号,INTERMAG。 99,Kyongiu,韩国,第3265-3267页,1999年。但是,这些提议的技术都不够可靠,无法始终\n\n获得足够的\"每项成本的特征值\"。更具体地,通过这些技术生产的纳米复合磁体中没有一个实现足够高的矫顽力以实际在各种应用中使用。因此,这些磁体均不能显示出商业上可行的磁性。\n\n发明内容\n\n为了克服上述问题,本发明的优选实施方式提供了一种以低成本生产具有优异磁性能的铁基合金永磁体的方法,并且还提供了一种具有矫顽力H的永磁体。cj 足够高,可以在各种应用中实际使用磁铁(例如,Hcj(约550 kA / m),同时保持剩磁Br 约为0.80 T或更高。\n\n根据本发明优选实施方式的铁基稀土合金纳米复合磁体具有由通式(Fei_mT)表示的组成。m)ioo-x-y-z QxRyTiz,其中T为选自由Co和Ni组成的组中的至少一种元素,Q为选自由B和C组成的组中的至少一种元素,并且R为至少一种基本上不包含La或Ce的稀土元素。 。摩尔分数x,y,z和m优选满足以下不等式:10\n\n在%2钛4Q型化合物至少部分地。\n\n在本发明的一个优选实施方案中,摩尔分数x,y和z满足以下不等式:10at%2钛4Q型化合物的Ti浓度约为2 at%或更低,而晶粒中的Ti浓度\n\nR2T14Q型晶粒之间的边界\n\n该化合物比R2T14Q型化合物的晶粒内部的Ti浓度高。\n\n具体来说,R2钛4R的晶粒之间的晶界中的Q Ti浓度2Ťi4Q型化合物优选为约7at%或更高。\n\n在又一个优选的实施方案中,铁磁性铁基硼化物具有沿着晶界厚度测量的约50nm或更小的平均尺寸。\n\n在又一个优选的实施方案中,铁磁性铁基硼化物以在R的晶粒之间的晶界上平均厚度为约20nm或更小的膜的形式存在。2钛4Q型化合物。\n\n在又一优选实施方式中,铁磁性铁基硼化物分散在R的晶粒之间的晶界中。2钛4Q型化合物,并且具有约1nm至约50nm的平均长轴长度。\n\n在又一优选实施方式中,在磁体的任意截面上,R 2 T 14 Q型化合物的晶粒的平均尺寸大于铁磁性铁基硼化物的平均尺寸。\n\n在又一个优选的实施方案中,摩尔分数x和z满足10at%的不等式。r 大约0.80 T或更高,最大能量积(BH)max 约100 kJ / m3 或更高,矫顽力Hcj 约为480 kA / m或更高。\n\n更具体地,磁体优选具有由剩磁B表示的硬磁性能。r 约0.85 T或更高,并且最大能量积(BH)max 约120 kJ / m3 或者更多。\n\n根据本发明的优选实施方式的粘结磁体是通过模制包括铁基稀土粉末的磁体粉末而获得的。\n\n根据本发明的上述优选实施例中的任何一个的合金磁铁,以及树脂粘结剂。\n\n附图说明\n\n无花果图1A和1B示意性地示出了根据本发明优选实施方式的铁基稀土合金纳米复合磁体的结构。\n\n图。图2A是示出根据本发明的优选实施方式的用于制造用于铁基稀土合金磁体的快速凝固的合金的熔融淬火机的整体布置的截面图;和\n\n图。图2B示出了图1A所示的机器的一部分。在图2A中,将熔体骤冷并快速固化至更大的规模。\n\n图。图3是表示本发明的优选实施方式的一个例子的样品的退磁曲线的图。\n\n图。图4是示出已经退火的样品的X射线衍射图的图。\n\n图。图5是通过观察微金属以约125,000的倍数为本发明的优选实施方式的示例拍摄的照片。\n\n透射电子显微镜观察退火样品的结构。\n\n图。图6是示出通过使用原子探针场离子显微镜(APFIM)观察针状样品的金属结构而拍摄的用于本发明的优选实施方式的示例的FIM图像的照片。\n\n图。图7是示出在2号样品的深度方向上测量的Nd,B和Ti的累积浓度分布的图。\n\n图。图8A是示出图7所示的区域No.1至12中的Ti浓度和Nd浓度之间的关系的图。 7;和\n\n图。图8B是示出图7所示的区域1至12中的Ti浓度与B浓度之间的关系的图。 7。\n\n实施本发明的最佳模式\n\n根据本发明优选实施方式的铁基稀土合金磁体是通过快速冷却并固化包括Ti的稀土-铁-硼基材料合金的熔体而形成的纳米复合磁体。这种快速凝固的合金包括纳米晶相。如果需要,将快速凝固的合金加热并进一步结晶。\n\n一般而言,如果将稀土元素R的摩尔分数设定为低于约10at%,则R2i4有助于硬磁性能的B相会降低其体积百分比。此外,a-Fe相比R早成核2铁44B相,并且容易过度增加其晶粒尺寸。由于a-Fe相具有高的磁化强度,因此所得磁体的磁化强度总体上增加。然而,由于磁体包括过大的α-Fe相,因此其退磁曲线的环路矩形度变差并且其矫顽力也降低。在现有技术中,人们试图通过添加一些金属元素来减小每个结晶相(包括容易具有过大尺寸的α-Fe相)的尺寸来提高矫顽力。但是,所得矫顽力仍然不足。\n\n本发明人通过实验发现并证实,如果将适量的Ti添加到包括小于约10at%的稀土元素R和约10at%至约17at%的B的材料合金中,则晶粒R的2Ťi4通过a-Fe的成核和晶粒的过度生长,Q型化合物以及随后的铁基硼化物可以比冷却和固化的熔融合金中的Fe相更早,更快地成核。\n\n预防。本发明人还发现,通过以这种方式比软磁性相更快地且更早地使硬磁性相成核并生长,可以在R之间的晶界中产生具有铁磁性的铁基硼化物的核。2钛4Q晶体。因此,如果在材料合金的结晶过程中生长铁磁性铁基硼化物以覆盖R的表面2钛4Q晶粒在不增加界面能的情况下,由多核生长的铁基硼化物暂时分散,但很快会在R的表面部分结合在一起2钛4Q晶粒。结果,铁基硼化物最终将形成某种膜或层。这样,R的表面2Ťi4Q晶粒至少部分地被铁基硼化物的膜覆盖。\n\n本发明的优选实施方案提供了一种纳米复合结构,其中R2钛4用作硬磁相的Q晶粒通过用作软磁相的铁基硼化物薄膜(平均厚度约为20 nm或更小)和/或其细颗粒(具有长轴尺寸约为1纳米至50纳米)。也就是说,沿着R的晶界2Ť14问\n\n晶粒,软磁性相和硬磁性相通过交换相互作用而磁耦合在一起。硬磁性相和软磁性相之间的交换耦合主要在它们的界面中产生。由于软磁性相以覆盖硬磁性相的膜的形式存在,所以大部分软磁性相的磁矩都受到磁约束,因此可获得优异的磁性能。结果,形成了可以用作交换弹簧磁体的结构。本发明人还发现,该磁耦合已经被存在于晶界中的微弱的磁性相或非磁性相所削弱。\n\n无花果图1A和1B示意性地示出了根据本发明优选实施方式的纳米复合磁体的结构。具体而言,图1A是示意性地示出R的截面图。2i4该优选实施方式的磁体中的B和晶界相。如图1所示。如图1A所示,在晶界相中存在铁基硼化物(Fe-B)。图。图1B是示出R的立体图。2i4B相与铁基硼化物。如图1所示。在图1B中,铁基硼化物被细分散和/或像薄膜或层一样结合在晶粒中\n\n边界,从而部分覆盖R的表面2i4B相。换句话说,存在于R的晶界中的铁基硼化物2i4B阶段部分继续,部分中断。\n\n以这种方式,根据本发明的优选实施方式,在R之间的晶界或亚界中生长具有铁磁性的铁基硼化物。2Ť44Q晶粒覆盖R的表面2钛4Q晶粒至少部分地。结果,形成了独特的纳米复合磁体结构,其中细(或薄)铁基硼化物存在于R之间的晶界或子界中2Ťi4可以获得Q晶粒。这里使用的术语\"晶粒边界\"不仅严格地指\"晶粒边界\",而且还指\"子边界\"。\n\n本发明人进行的实验结果表明,特别是当铁基硼化物与R2钛4Qf的铁磁特性在R的表面上形成了一层薄膜2钛4在其晶界中的Q晶粒,可以获得具有优异磁性能的纳米复合磁体。在本发明的优选实施方案中,软磁相薄地存在于晶界中,优选\n\n占整体的10%至40%\n\n磁铁。\n\n这样的结构是通过添加Ti然后比其他软磁相的晶粒更快和更早地成核和生长R2T14Q晶粒而实现的,然后通过在其之间的间隙(或晶界)中析出铁基硼化物来实现这种结构。 R2T14Q晶粒。也就是说,直到R2T14Q晶粒已经充分成核并生长,才允许软磁性相在其晶界中生长。因此,R限制了晶界部分中的软磁相的晶粒生长。2Ť14Q晶粒。以这种方式形成的软磁相的晶格与硬磁相的晶格不匹配。这种纳米复合磁铁的结构不同于铁的结构3黑白2铁14在这方面B型纳米复合磁体也是如此。具体来说,在铁中3黑白2铁14B型纳米复合磁体,包括约2at%至约6at%的稀土元素R和约15at%至约20at%的硼(B),软磁性Fe3B相和硬磁R2Fei4B相通过相变过程形成。也就是说,软磁铁3B相在硬磁R之前析出2i4乙\n\n相成核。在这种情况下,软磁性相不能以膜状存在。因此,铁的晶格3观察到B与R2Fex4B部分匹配。\n\n在本发明的优选实施方式中,随着R 2 T 14 Q晶粒成核并生长,已基本均匀地分布在熔融合金中的Ti被压入并凝结在R的晶界中。2钛4Q晶粒。本发明人认为原因是Ti不能以化学稳定状态存在于R内部。2钛4Q晶粒。根据本发明人收集的实验数据,在晶界相中冷凝的Ti以约5at%至约30at%的浓度存在于晶界中。但是,目前还不清楚Ti以什么形式存在。\n\n在下文中,将进一步详细描述根据本发明优选实施方式的铁基稀土合金磁体。\n\n在本发明的各种优选实施方式中,铁基稀土合金磁体优选具有由以下通式表示的组成:mŤm)ioo-x〜y-z QxRyTiz。在该式中,T优选为选自由Co组成的组中的至少一种元素。\n\nNi,Q优选为选自由B和C组成的组中的至少一种元素,R优选为基本上不包含La或Ce的至少一种稀土元素。摩尔分数x,y,z和m优选满足不等式10 at%2钛4Q型化合物和铁磁性铁基硼化物通过交换相互作用而磁耦合在一起。优选地,铁磁性铁基硼化物已经生长以在R2T14Q晶粒之间的晶界中形成膜,并整体上覆盖R2T14Q晶粒的表面。\n\n根据本发明的该优选实施方式的铁基稀土合金磁体包括小于约10at%的稀土元素。但是,具有铁磁性的铁基硼化物在主相的晶界中析出。因此,磁体可以表现出可比(甚至增加)的磁化强度(或剩磁B)。r),并且与不含Ti的磁铁相比,退磁曲线的环路矩形度更高。\n\n在根据本发明优选实施方式的铁基稀土合金磁体中,晶体\n\n具有铁磁特性的主相晶粒被铁基硼化物薄层覆盖,作为软磁相。因此,这两个主相的晶粒通过交换相互作用而磁耦合在一起。因此,合金整体上在其退磁曲线中可以表现出优异的环状矩形性。\n\n根据本发明该优选实施方式的铁基稀土合金磁体优选包括铁基硼化物和α-Fe,其饱和磁化强度近似等于或什至高于R2T14Q的磁化强度(通常为NdzFe ^ B)。 )阶段。铁基硼化物的实例包括Fe3B(饱和磁化强度约为1.5 T)和Fe23乙6 (饱和磁化强度约为1.6 T)。在这种情况下,钕2i4B相的饱和磁化强度约为1.6 T,a-Fe相的饱和磁化强度约为2.1T。\n\n通常,当B的摩尔分数x大于约10at%且稀土元素R的摩尔分数y为约6at%至约8at%时,R2铁23B3 除非添加Ti,否则会产生杂质。但是,即使使用具有这种组成的合金材料,添加Ti也会产生R2i4硼铁23乙6 和铁3B不是R2铁23B3, 在里面\n\n本发明的优选实施例。这些铁基硼化物有助于增加磁化强度。应该注意的是\" Fe3这里的B \"包括Fe 33。5 B,很难与铁区分开3B.\n\n在本发明的各种优选实施方式中,快速凝固的合金具有以下结构:几乎没有沉淀出具有过大晶粒尺寸的α-Fe相,而存在具有非常小晶粒尺寸的R2T14Q型相;或者具有以下结构:其中一个R2Ti4晶粒尺寸非常小的Q型相与非晶相共存。如本文所用,术语\"非晶相\"不仅是指其中原子排列充分无序的相,而且还包括包括用于结晶的胚,极小的晶体区域(尺寸:几纳米或更小)的相,和/或原子团簇。更具体地,术语\"非晶相\"是指具有不能通过X射线衍射分析或TEM观察确定的晶体结构的任何相。换句话说,具有通过X射线衍射分析或TEM观察可清楚识别的晶体结构的任何相在本文中将被称为\"结晶相\"。\n\n在现有技术中,如果熔融合金的成分与本发明的优选实施方案的成分相似\n\n本发明(即,包括本发明组合物中包括的所有元素但除Ti以外的所有元素的组合物)相对缓慢地冷却,所得合金将具有其中许多α-Fe相粗大生长的结构。因此,当此后加热和结晶合金时,a-Fe相将过度增加其晶粒尺寸。一旦包括a-Fe相在内的软磁相生长过多,合金的磁性能就会大大降低,因此实际上不可能从这种合金生产出优质的永磁体。\n\n仅当将Ti添加到材料合金中时,硬磁性相才会成核并比任何其他相更快地生长,并且比任何其他相更早地生长,然后具有铁磁性的铁基硼化物会沉淀在主相晶粒之间的晶界中。此后,沉淀的铁基硼化物将很快部分结合在一起,形成连续的膜。结果,形成其中主相的晶粒表面被该膜薄覆盖的结构。\n\n如果添加除Ti以外的任何其他金属元素(例如,Nb,V,Cr等),则在相对较高的温度下,a-Fe相的晶粒长大。\n\nα-Fe相迅速生长的范围,并且α-Fe相与硬磁性相之间的交换耦合不能有效地限制α-Fe相的磁化方向。结果,退磁曲线将大大降低环路矩形度。应该注意的是,即使添加Nb,Mo或W代替Ti,也可以通过在相对较低的温度范围内(无a-Fe的情况下)对合金进行热退火来获得良好的硬磁性能,包括出色的去磁曲线的环路矩形度。相沉淀。但是,在如此低温下退火的合金中,R2i4B结晶颗粒会分散在非磁性非晶相中,并且合金的剩磁不大r。同样,如果合金在更高的温度下退火,那么a-Fe相会形核并从非晶相中生长出来。与添加Ti的情况不同,成核后,a-Fe相迅速生长并过度增大了晶粒尺寸。结果,a-Fe相和硬磁性相之间的交换耦合不再能够有效地约束a-Fe相的磁化方向,并且退磁曲线的环路矩形度显着恶化。\n\n另一方面,在添加V或Cr而不是Ti的情况下,这些添加金属元素的磁矩与Fe的磁矩反铁磁耦合以形成固溶体,从而显着降低了磁化强度。\n\n相反,在向材料合金中添加Ti的情况下,a-Fe相的结晶动力学变慢,即,a-Fe相成核并生长需要更长的时间。因此,本发明人认为Nd2铁i4B相开始成核并在a-Fe相粗大生长之前生长。因此,添加Ti时,Nd的晶粒2铁14在a-Fe相生长过多之前,B相可以充分生长并均匀分布。\n\n因此,仅当添加Ti时,a-Fe相的晶粒粗大化就如所希望的那样最小,因此,可以获得具有铁磁特性的铁基硼化物。此外,Ti,B和C作为延缓Fe初始晶体(即y〜Fs (将转变为α-Fe),从而有助于在熔融淬火过程中产生过冷液体。因此,即使包括Ti的材料合金的熔体在70℃下迅速冷却并固化。\n\n相对较低的冷却速度约102 °C /秒至约105 °C / sec,一种快速凝固的合金,其中晶粒尺寸过大的α-Fe相尚未析出,但包含纳米晶R2i4可获得约60vol%或更高的B相(有时也包括铁基硼化物)。\n\n首选组成\n\nQ可以是仅B(硼)或B和C(碳)的组合。 C与Q之比优选为约0.25或更小。\n\n如果Q的摩尔分数x为约10at%或更小,则难以制备期望的快速凝固的合金,其中纳米晶体R2i4在大约10的低冷却速率下B和非晶相共存2 °C /秒至约104 °C /秒而且,即使此后对快速凝固的合金进行退火,所得的Hcj 合金的抗腐蚀强度将小于约400kA / m。另外,在这种情况下,不能采用作为各种快速冷却方法中最具成本效益的技术之一的带钢铸造工艺,并且所产生的永磁体产品的价格无意中增加了。另一方面,如果Q的摩尔分数x超过约17 at%,则铁基硼化物将几乎与R同时开始成核。2铁i4B期,并且会成长\n\n最后过度。\n\n纳米复合结构,其中铁基硼化物相均匀分布在R的晶界中或以薄膜形式存在于R的晶界中2i4无法获得B相,并且所得到的磁性能劣化。\n\n考虑到这些考虑,Q的摩尔分数x优选大于约10at%且等于或小于约17at%。 x的更优选上限为约16原子%,x的更优选上限为约15原子%。\n\nC与Q的(原子)比p优选为约0至约0.25。为了获得添加剂C所期望的效果,C比p优选等于或大于约0.01。原因如下。如果p远小于约0.01,则即使添加C也几乎无法获得预期的效果。另一方面,如果p远大于约0.25,则产生的a-Fe相的体积百分比增加太多,从而导致所得磁性能的劣化。比率p的下限优选为约0.02,而其上限优选为约0.20。更优选地,比率p为约0.02至0.02。\n\n约0.17。\n\nR是选自稀土元素(包括钇)中的至少一种元素。优选地,R基本不包括La或Ce。这是因为如果包含La或Ce,则R中包含R(通常为Nd)2铁14B相被La或Ce取代,从而降低了矫顽力并降低了退磁曲线的环路矩形度。但是,如果存在极少量(即约0.5at%或更少)的La或Ce作为不可避免地包含的杂质,则磁性能不会受到如此严重的影响。因此,这里的短语“ ## *基本上没有La(Ce)\"”或“ \"基本上不包括La(Ce)\"”是指La(Ce)的含量为约0.5at%或更少。更具体地,R优选包括Pr或Nd作为必不可少的元素,其一部分可以被Dy和/或Tb代替。如果R的摩尔分数y小于约6原子%,则具有纳米晶体R 2 Fei的细晶粒4实现矫顽力所需要的B结构不能充分结晶,并且所需的高矫顽力Hcj 不能获得约480kA / m或更大的电流。另一方面,如果R的摩尔分数y等于或大于约10 at%,则具有铁磁特性和a-Fe相的铁基硼化物的百分比会降低,而富R的非铁硼化物的百分比会降低。磁相反而增加。结果,\n\n通过交换相互作用与存在于晶界中的软磁相发生磁性相互作用。结果,获得了优异的硬​​磁性能。应注意的是,每个组成相(例如R)的体积百分比2i4B相在此通过莫斯鲍尔光谱法测量。\n\n为了获得上述效果,Ti是必不可少的。添加剂Ti增加矫顽力Hcj,剩磁Br 和最大能量积(BH)max 并改善退磁曲线的环路矩形度。\n\n如果Ti的摩尔分数z小于约0.5at%,则不能完全实现添加剂Ti所期望的那些效果。然而,如果Ti的摩尔分数z超过约6at%,则即使在合金已经被加热和结晶之后,残留在合金中的非磁性相的体积百分比也会增加,并且剩磁Br 可能下降。另外,如果Ti的摩尔分数z超过约6原子%,则在熔融合金中产生TiB 2,从而使得难以进行预期的熔融淬火过程。考虑到这些考虑,Ti的摩尔分数z优选为约0.5原子%至约6原子%。更优选的z范围的下限为约1.0at%,并且\n\n其上限为约5at%。更优选的z范围的上限为约4at%。\n\n而且,Q的摩尔分数x越高,越可能形成包括过量百分比的Q(例如,硼)的非晶相。因此,也由于这个原因,优选将Ti的摩尔分数z设置得更高。 Ti对B具有很强的亲和力,并且在膜状晶界相中冷凝。但是,如果Ti的摩尔分数z与B的摩尔分数x的比率太高,则Ti将不再存在于FeaB晶界相中,而是会结合到R中。2i4B化合物,因此可能降低磁化强度。但是,如果z / x比率太低,则会大量产生富含B的非磁性非晶相。本发明人通过实验发现并证实,优选将摩尔分数x和z控制为满足0.05 ^ z / x ^ 0.4的不等式,更优选满足0.1 ^ z / x ^ 0.35的不等式,甚至更优选满足满足不等式0.13 ^ z / x ^ 0.3。\n\n除了元素B,C,R和Ti之外,材料合金的其余部分可以单独是Fe。或者,可以将选自由Co和Ni组成的组中的至少一种过渡金属元素T代替一部分。\n\n由于在这种情况下也可以实现所需的硬磁性能。但是,如果铁中至少有50%的铁被T取代,则剩余的Br 不能获得约0.7T或更大的T。因此,Fe的置换比例优选为约0%〜约50%。同样,通过用Co代替一部分Fe,去磁曲线的环路矩形度得到改善,R的居里温度2Fei4B相增加,从而增加了合金的热阻。可被Co替代的Fe的百分比优选为约0.5%至约40%。\n\n为了获得各种期望的优点和效果,可以以约0原子%至约10原子%的摩尔分数添加金属元素M。 M是选自Al,Si,V,Cr,Mn,Cu,Zn,Ga,Zr,Nb,Mo,Hf,Ta,W,Pt,Pb,Au和Ag的至少一种元素。\n\n在下文中,将参考附图描述本发明的特定优选实施例。\n\n熔体淬火机\n\n在该优选实施例中,使用诸如图1和2所示的熔融淬火机制备材料合金。 2A和2B。合金制备过程在惰性气氛中进行,以防止\n\n包括容易被氧化的稀土元素R和Fe的材料合金被氧化。惰性气体可以是例如氦或氩的稀有气体或氮气。氦或氩的稀有气体比氮气更可取,因为氮气会相对容易地与稀土元素R反应。\n\n图1中所示的机器包括:图2A所示的实施例包括材料合金熔化室1和材料合金淬火室2,在其中以可调节的压力产生真空或惰性气氛。具体而言,图2A示出了机器的整体布置,而图2B示出了机器的总体布置。图2B以更大的比例示出了机器的一部分。\n\n如图1所示。如图2A所示,熔化室1包括熔化坩埚3,在底部具有充填喷嘴5的熔化物储存器4,以及气密混合材料进料器8。材料合金20已经制备成具有期望的磁体合金组成并被供应。来自进料器8的熔体在升高的温度下在熔融坩埚3中熔融。将原料合金20的熔融金属21倒入到储液器4中,该储液器4设有加热器(未示出),用于将从其蓄积的熔融金属21的温度保持在预定水平。\n\n淬火室2包括旋转的冷却辊7,用于快速冷却和固化已经通过浇注喷嘴5注入的熔体21。\n\n在该机器中,将熔化和骤冷室1和2内的气氛和压力控制在预定范围内。为此,在机器的适当位置处设置大气入口1b,2b和8b以及出口1a,2a和8a。特别地,气体出口2a连接至泵,以将淬火室2内部的绝对压力控制在约30kPa至大气压附近。\n\n可以将熔融坩埚3倾斜至期望的角度,以将熔体21通过漏斗6倒入容器4中。容器4中的熔体21被加热器(未示出)加热。\n\n容器4的注嘴5位于熔化室和骤冷室1和2之间的边界壁上,以将熔体21从容器4倒入位于喷嘴5下方的冷却辊7的表面上。喷嘴5的孔直径例如可以为约0.5mm至约2.0mm。如果熔体21的粘度高,则熔体21不能容易地流过喷嘴5。在这个首选\n\n然而,在本实施例中,淬火室2内的压力保持低于熔化室1内的压力。因此,在熔化室和淬火室1和2之间存在适当的压差,并且熔体21可以被平滑地浇铸。\n\n为了获得良好的导热性,冷却辊7可以由铝合金,铜合金,碳钢,黄铜,钨,钼或青铜制成。然而,辊7优选地由Cu制成,因为Cu以合理的成本实现了足够的机械强度。辊7的直径例如可以为约300mm至约500mm。基于凝固潜热和每单位时间吸收的熔融物的体积来计算和控制设置在辊7内部的水冷却器的水冷却能力。\n\n图1至图3中所示的机器。例如,图2A和2B所示的材料合金可以在约10至约20分钟内快速固化约10kg的材料合金。以这种方式获得的快速凝固的合金为薄带(或合金带)22的形式,其厚度为约10μm至约300μm,宽度为约2mm至约3mm。\n\n熔体淬火工艺\n\n首先,由上述通式表示的材料合金的熔体21为\n\n制备大于或等于平均粒径小至约50nm或更小的R2T14Q型相。\n\n根据本发明的各种优选实施方式,快速冷却熔体的技术不限于上述的单辊熔体纺丝方法。其他适用技术的实例包括双辊法,气体雾化法,不需要使用喷嘴或孔口来控制流量的带钢铸造法,以及结合使用辊和雾化法的快速冷却技术。\n\n在这些快速冷却技术中,带钢铸造方法导致较低的冷却速度,约为102 °C /秒至约105 °C /秒根据该优选实施方式,通过向原料合金中添加适当量的Ti,即使通过带铸法也可以得到快速凝固的合金,其中大部分具有不具有Fe初晶的结构。条带铸造方法的工艺成本可以是任何其他快速冷却方法的一半或更少。因此,在制备大量快速凝固的合金中,带材铸造法比单辊法有效得多,并且适用于批量生产。但是,如果没有添加Ti\n\n对于本发明来说,用于结晶的热处理不是必不可少的。然而,为了进一步改善磁体性能,优选进行热处理。另外,即使在比常规方法更低的温度下进行热处理,仍可以充分改善磁体性能。\n\n为了防止合金被氧化,优选在惰性气体(例如,Ar或N)中进行热处理。2 气体)的压力约为50 kPa或更低。或者,也可以在约1.0kPa以下的真空中进行热处理。\n\n在热处理之前,快速凝固的合金可能包含亚稳相,例如铁3铁23Bg和R2铁23乙3 R以外的阶段2i4B相和非晶相。在这种情况下,热处理完成后,R2铁23乙3 相将消失。取而代之的是铁基硼化物(例如Fe23乙6),其饱和磁化强度近似等于或什至高于R2i4可以生长B相或a-Fe相。\n\n经过该热处理的所得磁体合金包含R2钛4Q型相位(例如,R2i4B相)在约65体积%至约85体积%。更多spe\n\n特别地,如果R的摩尔分数y为约9原子%,则R 2 T 14 Q型相为整个合金的约75体积%。但是,如果R的摩尔分数y降低到约8原子%,则R 2 T 14 Q型相占整个合金的约68体积%。另一方面,磁体还包括约10vol%至约35vol%的软磁相。\n\n此外,结晶相,包括R2Ť14Q型化合物和铁磁性铁基硼化物总计占全部合金的约95体积%以上,而非晶态相占全部合金的约5体积%以下。\n\n在本发明的优选实施方式中,即使软磁性相如铁基硼化物保留在所得的退火合金中,那些软磁性相也以覆盖硬磁性相的薄膜的形式存在。因此,由于软磁性相和硬磁性相通过交换相互作用而磁耦合在一起,因此仍可获得优异的磁性能。\n\n根据本发明的优选实施方式,晶界相主要由具有铁磁特性的铁基硼化物(例如FesB)制成,并且还包括具有铁磁特性的α-Fe相。\n\nR的晶粒度2钛4Q型相优选为约20nm至约200nm,更优选为约20nm至约100nm。\n\n另一方面,如果铁基硼化物的薄膜的平均厚度大于约50nm,则各组成相之间的交换相互作用减弱,从而使退磁曲线的环矩形性变差并降低(BH )raax。这就是为什么在晶界的厚度方向上测得的铁基硼化物相的平均尺寸(即膜的平均厚度)优选为约50nm或更小,更优选为约30nm或更小,甚至更优选约20nm或更小。\n\n应该注意的是,快速凝固的合金薄带在进行热处理之前可以被粗切或粉碎。热处理后,将得到的磁性合金细粉碎,得到磁铁粉末。然后,可以通过对该粉末进行已知的处理步骤来由该磁体粉末制造各种类型的粘结磁体。在制造粘结磁体时,将铁基稀土合金的磁体粉末与环氧树脂或尼龙树脂粘合剂混合,然后模制成所需的形状。这时,任何其他的磁铁粉\n\n型(例如Sm-Fe-N型磁铁粉末或硬铁氧体\n\n还可以对磁体进行处理,例如用塑料或转化涂层覆盖或镀覆。这是因为与对磁铁粉末进行表面处理的情况一样,也可以提高粘结磁铁的耐腐蚀性和耐热性。\n\n例子\n\n例1\n\n分别称重纯度约为99.5%或更高的材料B,Fe,Ti和Nd,以使其合金成分为Nd9Fe78.7Bxo.3Ti2(下标以原子百分比表示),总重量约为30克然后,将混合物注入石英坩埚中。\n\n石英坩埚的底部有一个直径约为0.8毫米的孔。因此,将包含这些材料的合金在石英坩埚中熔融,从而成为材料合金的熔体,然后将其倾倒通过孔。通过感应加热法在氩气氛中以约35kPa的压力使原料合金熔融。在本发明优选实施方案的这个具体实例中,将熔体的温度设定为约1500℃。\n\n通过CuKa特征X射线分析通过​​该快速冷却过程获得的快速凝固的合金结构。结果,代表Nd的衍射峰2i4B相几乎无法识别出光晕图案。因此,本发明人证实了纳米晶Nd2铁i4B相存在于快速凝固的合金的非晶相中。\n\n接着,将该快速固化的合金在氩气中退火。具体地,将快速固化的合金在约660℃下保持约10分钟,然后冷却至室温。之后,用振动样品磁力计(VSM)测量退火合金的磁性能。结果示于下表1:\n\n表格1\n\n成分(原子百分比)磁性能Br (T)高CJ (kA / m)(BH)max (千焦/米3钕铁硼8.7生物.3Ti2 0.88 722.57 121.0\n\n图。图3示出了该样品的退磁曲线。\n\n当用CuKa特征X射线分析退火的合金结构时,晕圈图案消失了,但是代表Nd的衍射峰2i4硼铁23观察到Bg和a-Fe相。图。 4示粉\n\n退火合金的X射线衍射图。\n\n接下来,用透射电子显微镜(TEM)分析退火的微金属结构。结果,观察到平均粒径为约150nm的晶粒和平均粒径为约20nm的细晶粒。细晶粒存在于先前晶粒之间的晶界中。图。图5是TEM照片,其示出了在约125,000的功率下的退火合金的暗场图像。\n\n接下来,通过TEM-EDX分析通过TEM观察到的晶粒的合金组成。结果,将平均粒径约为150nm的晶粒鉴定为Nd。2i4B.但是,在Nd之间的晶界中存在平均晶粒尺寸为约20nm的细晶粒的相。2i4B晶粒,无法识别。因此,可以看出,铁基硼化物要么以非常小的颗粒的形式分散在晶界中,要么以薄膜(或层)的形式存在。\n\n接下来,将退火的合金机械抛光并加工成棱柱状的棒状样品。毛皮\n\nThermore,该棒状样品的末端变尖\n\n通过电解抛光技术制成针状。然后,用原子探针场离子显微镜(APFIM)分析该针状样品的金属结构。结果,本发明人不仅鉴定出Nd,2i4B相为主要相,但也为铁基硼化物和极少量的Fe。本发明人还发现,铁基硼化物中的Ti浓度约为Nd2Fe中的Ti浓度的三倍。14B相。\n\n绘制了通过APFIM分析计数的离子累积数。当绘制的离子总数达到约12,700时,停止APFIM分析,以获取针状样品末端的FIM图像。图。图6显示了此FIM图像。\n\n图2中所示的图像的中心位于中心。图6对应于探针孔。所获得的FIM图像显示出明亮的岛状区域分散在黑暗的区域中。考虑到拍摄该图像的条件,暗矩阵可以视为代表Nd2Fei4B相,而亮岛状区域可被视为代表铁基硼化物相。也就是说,可以看出,硼化物相精细地分散在退火合金中。但是,组成\n\nTEM无法分析尺寸非常小的铁基硼化物相。\n\n为了更准确地检测铁基硼化物的三维分布,需要在其深度方向上以相对较短的间隔连续拍摄多个针状样品的FIM图像。然后,需要对获得的FIM图像进行处理以使其在深度方向上排列。\n\nTEM和FIM图像均显示,铁基硼化物相的横截面尺寸约为10 nm。因此,如果Nd2Fei内部存在铁基硼化物4B晶粒,则其相应已通过TEM鉴定。然而,根据本发明人进行的实验结果,无法确定这些相。这些结果表明,Nd2Fei内部不存在铁基硼化物4B晶粒,但要么细分散在Nd之间的晶界2i4B晶粒或以覆盖Nd的部分连续薄膜的形式存在2铁14B晶粒。\n\n如果观察到这种多孔膜形状的铁基硼化物为TEM或FIM图像,则观察到铁基硼化物为相互分离的尺寸为约1nm至约20nm的细晶粒。在\n\n透射电子显微镜,证实了钕2铁i4硼和铁3B相共存于合金中。具体来说,钕2i4B相以晶粒形式存在,平均晶粒尺寸约为50 nm至150 nm,而Fe3B相存在于Nd的晶界区域2i4B相。晶界区的厚度为几纳米至约20纳米。\n\n用振动样品磁力计(VSM)测量各个样品的磁性能。结果也显示在表2中。\n\n接下来,Nd中的Ti浓度2i4B相通过APFIM分析测量。具体地,将退火的快速凝固的合金机械抛光并加工成棱柱状的棒状样品。此外,通过电解抛光技术将该棒状样品的末端削尖成针状。然后,用APFIM分析法分析针状样品的金属结构。\n\n图。图7示出了在2号样品的深度方向上测量的Nd,B和Ti的累积浓度分布。在图7中,在深度方向上绘制了通过APFIM分析计数的离子的累积数。具体地,计数原子数的范围在深度方向cor上增加\n\n响应原子存在的区域。另一方面,在深度方向上计数的原子数恒定的范围对应于不存在原子的区域。\n\n图2所示的图。图7中的电极具有多个节点,在每个节点处代表Nd,B或Ti离子计数的曲线的斜率改变。在这些节点处将测量Nd,B和Ti浓度的范围划分为1至12号区域,从而计算这些1至12号区域中Nd,B和Ti的浓度。计算在图1至图4中示出。 8A和8B。具体而言,图1所示的曲线图的纵轴为纵轴。图8A表示Ti浓度,其横坐标表示Nd浓度。另一方面,图3中所示的曲线的纵坐标为0。 8B表示Ti浓度,其横坐标表示B浓度。\n\n从图2可以看出。如图8A所示,在Nd浓度为约8at%至约14at%的区域中,Ti浓度为约2at%或更小。自Nd2Fei4在Nd浓度为约8at%至约14at%的区域中存在B相,可以看出Nd中的Ti浓度2i4B相约\n\n2 at%以下。\n\n在其中添加Ti的情况下,Nd晶粒中Ti的浓度2i4B型化合物为约2原子%以下。另外,Nd之间的晶界中的Ti浓度2铁i4B晶粒大于约8 at%,远高于Nd中的Ti晶粒2铁14B晶粒本身。此外,Nd之间的Ti浓度差2i4B(右2i4B)相和晶界相高达约6at%或更多。另一方面,在其中添加Cr或V的每个比较例中,Nd中Cr或V的浓度2i4B相大于约2at%。\n\n如果N中添加剂M(例如Ti)的浓度2i4B型化合物超过约2原子%,则Nd的磁化2铁14B晶粒大大减少。为了避免这种磁化强度的下降,Nd中的Ti浓度2铁14B晶粒优选为约2原子%以下,更优选为约1.8原子%以下。 Nd中的Ti浓度2i4B晶粒最优选为约1.65at%或更低,以进一步增加磁化强度。\n\n比较例的晶界区域中的Cr或V的浓度与晶界区域中的Ti的浓度相差无几。\n\n存在于晶界区域中的铁基硼化物覆盖具有硬磁特性的晶粒。因此,铁基稀土合金磁体也表现出改善的耐腐蚀性。一般来说,铁基稀土合金磁铁包括2钛4除非经过某种处理,否则具有硬磁性能的Q型相显示出较差的抗氧化性和抗腐蚀性。这是因为R2T14Q型相包含高浓度的易氧化的稀土元素R。但是,在本发明的优选实施方式中,R 2 T 14 Q型化合物的晶粒在R浓度低的晶界区域被铁系硼化物覆盖。因此,氧化或腐蚀在晶界区域停止,并且可以有效地防止过度的氧化或腐蚀。另外,以相对高的浓度存在于晶界区域中的Ti也将有助于增加抗氧化性和抗腐蚀性。这是因为Ti是化学稳定性高的金属元素。此外,该结构还可以适当地调节交换耦合,从而实现了矫顽力和剩磁良好平衡的优异磁体。\n\n工业适用性\n\n根据本发明的各种优选实施例,包括添加剂Ti的材料合金的熔体被快速冷却和固化,从而实现了表现出优异的磁性能的永磁体,所述磁性能包括高矫顽力和高磁化强度,同时减小了下限。磁铁中包含所需量的稀土元素。\n\n另外,根据本发明的各种优选实施方式,即使通过降低了冷却速度的熔融淬火法制备了快速凝固的合金,Ti的添加也可以有效地防止在熔融淬火时a-Fe相的析出。处理。因此,可以采用导致相对较低的冷却速度并且适合于批量生产的带钢铸造方法或熔融淬火工艺,从而有利地降低了制造成本。\n\n应当理解,前面的描述仅是对本发明的说明。在不脱离本发明的情况下,本领域技术人员可以设计出各种替代和修改。因此,本发明旨在包含\n\n落入所附权利要求书范围内的所有此类替代,修改和变化。\n\ntxTEi IF’\\ L\n\nPRO 。’--\'--\'-:-\'?INES\n\n含铁量14铁硼\n\n图。 1A\n\n我«KL\n\nPRvri- -。 :; t\n\n7 7 7 1 ’08 6月18日P4\n\n图。 2A\n\n日立金属株式会社\n\nSAPALO VELEZ BUNDANG和BULILAN\n\n图。 2B\n\n0.8\n\n图。 3\n\n日立金属株式会社\n\nSAPALO VELEZ BUNDANG和BULILAN\n\nm\n\n30 35 40 45\'50 55 60 65\n\n2 0 /度\n\n图。 4\n\n图。 5\n\n200纳米\n\n图。 6\n\n日立金属有限公司申请人SAPALO VELEZ BUNDANG&BULILAN\n\nTl数\n\n图。 7\n\n钛锥。 / 在。%\n\n7 7 6 4 \'08 6月1\n\nNd锥。 / 在。%\n\n图。 8A\n\n英特爱\n\nFROff 1我们\n\n7 76 3 ’08 6月18日\n\n收货人\n\n0 5 10 15 20 25 30 35\n\nB锥。 / 在。%\n\n图。 8B');
INSERT INTO `os_patent_instruction_text` VALUES (12990, 22819, 'TECHNICAL FIELD \n\n[0001]The present invention relates to a rare-earth sintered magnet and a method for producing the same.\n\nBACKGROUND ART \n\n[0002]A rare-earth alloy sintered magnet (permanent magnet) is usually produced by compacting a powder of a rare-earth alloy, sintering the resultant powder compact and then subjecting the sintered compact to an aging treatment. Permanent magnets currently used extensively in various fields of applications include rare-earth-cobalt based magnets and rare-earth-iron-boron based magnets. Among other things, a rare-earth-iron-boron based magnet (which will be referred to herein as an \"R-Fe-B based magnet\" where R is at least one of the rare-earth elements including Y, Fe is iron and B is boron) is used more and more often in various types of electronic appliances. This is because an R-Fe-B based magnet exhibits a maximum energy product that is higher than any of various other types of magnets and yet is relatively inexpensive.\n\n[0003]An R-Fe-B based sintered magnet includes a main phase consisting essentially of a tetragonal R 2 Fe 14 B compound, an R-rich phase including Nd, for example, and a B-rich phase. An R-Fe-B based sintered magnet is described in United States Patents Nos. 4,770,723 and 4,792,368, for example.\n\n[0004]A further rare-earth sintered magnet as defined in the preamble of claim 1 and a method for producing a rare earth sintered magnet as specified in the preamble of claim 5 are known from Japanese Patent Application No. JP 01-219142.\n\n[0005]In the prior art, an R-Fe-B based alloy has been prepared as a material for such a magnet by an ingot casting process. In an ingot casting process, normally, rare-earth metal, electrolytic iron and ferroboron alloy as respective start materials are melted by an induction heating process, and then the melt obtained in this manner is cooled relatively slowly in a casting mold, thereby preparing an alloy ingot.\n\n[0006]Recently, a rapid quenching process such as a strip casting process or a centrifugal casting process has attracted much attention in the art. In a rapid quenching process, a molten alloy is brought into contact with, and relatively rapidly cooled and solidified by, the outer or inner surface of a single chill roller or a twin chill roller, a rotating chill disk or a rotating cylindrical casting mold, thereby making a rapidly solidified alloy, thinner than an alloy ingot, from the molten alloy. The rapidly solidified alloy prepared in this manner will be referred to herein as an \"alloy flake\". The alloy flake produced by such a rapid quenching process normally has a thickness of about 0.03 mm to about 10 mm. According to the rapid quenching process, the molten alloy starts to be solidified from a surface thereof that has been in contact with the surface of the chill roller. That surface of the molten alloy will be referred to herein as a \"roller contact surface\". Thus, in the rapid quenching process, columnar crystals grow in the thickness direction from the roller contact surface. As a result, the rapidly solidified alloy, made by a strip casting process or any other rapid quenching process, has a structure including an R 2 Fe 14 B crystalline phase and an R-rich phase. The R 2 Fe 14 B crystalline phase usually has a minor-axis size of about 0.1 µm to about 100 µm and a major-axis size of about 5 µm to about 500 µm. On the other hand, the R-rich phase, which is a non-magnetic phase including a rare-earth element R at a relatively high concentration and which has a thickness (corresponding to the width of the grain boundary) of about 10 µm or less, is dispersed in the grain boundary between the R 2 Fe 14 B crystalline phases.\n\n[0007]Compared to an alloy made by the conventional ingot casting process or die casting process (such an alloy will be referred to herein as an \"ingot alloy\"), the rapidly solidified alloy has been quenched and solidified in a shorter time (i.e., at a quench rate of 10 2[0008]An alloy powder to be compacted is obtained by performing the processing steps of: coarsely pulverizing an alloy block, prepared by any of the methods described above, by a hydrogen occlusion process, for example, and/or any of various mechanical milling processes (e.g., using a disk mill); and finely pulverizing the resultant coarse powder (with a mean particle size of 10 µm to 500 µm) by a dry milling process using a jet mill, for example.\n\n[0009]The R-Fe-B based alloy powder to be compacted preferably has a mean particle size of 1.5 µm to 6 µm to achieve sufficient magnetic properties. It should be noted that the \"mean particle size\" of a powder refers herein to a mass median diameter (MMD) unless stated otherwise.\n\n[0010]A rare-earth sintered magnet produced by the method described above has bad corrosion resistance and easily gets rusted, which is a serious problem. Thus, to improve the corrosion resistance, a coating film needs to be provided on the surface of the sintered magnet by a plating or evaporation technique. However, the process step of providing such a coating film increases the manufacturing cost adversely. Accordingly, there is an increasing demand for a magnet alloy with improved corrosion resistance.\n\n[0011]The applicant of the present application discovered that the corrosion resistance of a rare-earth sintered magnet could be improved by adding Cr to its main phase and disclosed that discovery in Japanese Laid-Open Publication No. 4-268051. However, if Cr were added heavily enough to improve the corrosion resistance sufficiently, then the remanence B r  of the magnet would decrease and therefore, the maximum energy product (BH) max  would decrease, too. Also, in the grain boundary of a sintered magnet, the corrosion resistance cannot be increased sufficiently even by adding Cr thereto.\n\n[0012]Meanwhile, there is another proposal that the corrosion resistance should be improved by condensing carbon (C) in the grain boundary phase of a sintered magnet such that the main phase is surrounded with the grain boundary phase having a relatively high C concentration (see Japanese Laid-Open Publication No. 4-268051). According to this technique, however, the C added is likely to bond to a rare-earth element R such as Nd in the grain boundary, thus decreasing the sinterability easily.\n\n[0013]In order to overcome the problems described above, a primary object of the present invention is to provide a rare-earth sintered magnet with excellent corrosion resistance and sinterability and a method for producing such a magnet.\n\nDISCLOSURE OF INVENTION \n\n[0014]A rare-earth sintered magnet according to claim 1 is proposed to solve the above object.\n\n[0015]In one preferred embodiment, 50 at% to 90 at% of the overall grain boundary phase is Co.\n\n[0016]In another preferred embodiment, the grain boundary phase includes an R 3 Co compound.\n\n[0017]In another preferred embodiment, the rare-earth sintered magnet includes 12 at% to 18 at% of R, 60 at% to 88 at% of T, 0.1 at% to 2.4 at% of Cr, 0.5 at% to 13 at% of B, and 0.4 at% to 4.5 at% of C.\n\n[0018]Further, a rare-earth magnet producing method according to claim 5 is proposed to solve the above object.\n\n[0019]In one preferred embodiment, the main phase alloy includes 11 at% to 16 at% of R, 60 at% to 87 at% of T, 0.2 at% to 2.5 at% of Cr, 1 at% to 14 at% of B, 0.5 at% to 5.0 at% of C and optionally 0.1 at % to 10 at % of Co, Ni and/or AL or Cu.\n\n[0020]In another preferred embodiment, a first alloy including 0.8 mass% to 1.0 mass% of Q and a second alloy including 1.2 mass% to 1.4 mass% of Q are used as the main phase alloy. The weight ratio of the first and second alloys is preferably defined within the range of 3: 1 to 1: 3.\n\n[0021]In another preferred embodiment, the liquid phase alloy includes 60 at% to 80 at% of R and 20 at% to 40 at% of Co.\n\n[0022]In another preferred embodiment, the ratio of the liquid phase alloy to the sum of the main phase and liquid phase alloys is defined within the range of 2 vol% to 20 vol%.\n\n[0023]In another preferred embodiment, the method further includes the steps of preparing a melt of a material alloy for the main phase alloy and cooling and solidifying the melt of the material alloy at a rate of 100 °C/s to 10,000 °C/s.\n\nBRIEF DESCRIPTION OF DRAWINGS \n\n[0024] FIG. 1 shows a configuration for an apparatus for measuring a natural electrode potential (i.e., a potentiostat). FIG. 2 is a graph showing the polarization curve of an Nd 11.8 Fe 82.2 B 6.0  alloy. FIG. 3 is a graph showing the polarization curves of Nd 11.8 Fe 82.2-x CO x B 6.0  alloys (where x=0, 5, 10, 20 or 50). FIG. 4 is a graph showing a relationship between the natural electrode potential and the Co substitution percentage for a main phase alloy Nd 11.8 Fe 82.2-x CO x B 6.0 , in which a portion of Fe is replaced with Co, and for an intermetallic compound that can be included in the grain boundary phase. FIG. 5 is a graph showing a relationship between the variation in weight and the natural electrode potential in a corrosion test. FIG. 6 is a graph showing a relationship between the natural electrode potential and the substitution percentage in a main phase alloy in which Fe is replaced with Co, Ni, Cr and Al. FIG. 7 is a graph showing relationships between the natural electrode potential and the substitution percentage in a Co-substituted alloy and a Co+C substituted alloy. FIG. 8 is a graph showing relationships between the natural electrode potential and the substitution percentage in an Ni-substituted alloy and an Ni+C substituted alloy. FIG. 9 is a graph showing relationships between the natural electrode potential and the substitution percentage in a Cr-substituted alloy and a Cr+C substituted alloy. FIG. 10 is a graph showing a hydrogen pulverization (or decrepitation) process. \n\nBEST MODE FOR CARRYING OUT THE INVENTION \n\n[0025]A rare-earth sintered magnet according to the present invention includes an R 2 T 14 Q type tetragonal compound (where R is at least one rare-earth element, T is at least one transition metal element always including Fe, and Q is boron and/or carbon) as a main phase and a grain boundary phase surrounding the main phase. In this case, the rare-earth elements include Y (yttrium).\n\n[0026]The principal features of the present invention lie in that the R 2 T 14 Q type tetragonal compound as the main phase includes Cr, which substitutes for a portion of Fe, and carbon (C), which substitutes for a portion of boron (B), as respective essential elements and that the C concentration of the main phase is higher than that of the grain boundary phase.\n\n[0027]It should be noted that if there is \"Cr substituting for a portion of Fe\", then it means that Cr atoms are present at the same type of sites of an R 2 T 14 Q type tetragonal compound crystal as those where Fe atoms are present. Thus, the Fe atoms do not have to be actually replaced with the Cr atoms at particular sites. In the same way, if there is \"C substituting for a portion of B\", then it means that Cr atoms are present at the same type of sites of the R 2 T 14 Q type tetragonal compound crystal as those where B atoms are present. Thus, the B atoms do not have to be actually replaced with the C atoms at particular sites.\n\n[0028]A sintered magnet according to the present invention, having such a composition, needs the additive Cr in such an amount as to cause no serious deterioration of the magnet performance (e.g., 2 at% or less of the overall magnet). Also, the magnet further includes C as another additive but can improve the corrosion resistance significantly without decreasing its sinterability.\n\n[0029]A preferred method of adding Cr and C and setting the concentrations of Cr and C in the main phase higher than those in the grain boundary phase will be described in detail later. First, it will be described in detail based on results of experiments exactly how the R 2 T 14 Q type tetragonal compound can have its corrosion resistance improved by the addition of Cr and C.\n\nCorrosion resistance and\n\nnatural electrode potential\n\n[0030]Generally speaking, the corrosion of a metal advances if there is an impurity metal that has such a potential as defining itself as a more precious metal than the former metal is. This is because the impurity metal functions as a local cathode, thus causing a cell reaction more easily. For that reason, to improve the corrosion resistance of a rare-earth magnet, it should be effective to increase the natural electrode potential of the material alloy of the magnet. Meanwhile, it can also be believed that the corrosion of a rare-earth sintered magnet advances through a cell reaction caused by a potential difference between the main phase and grain boundary phase.\n\n[0031]However, as to what types of elements should be added how much to improve the corrosion resistance, there were no guidelines allowing for any quantitative estimation. Thus, the present inventors estimated quantitatively the potentials of various types of alloys, making up the main and grain boundary phases, by plotting their polarization curves, thereby analyzing the structure of an anticorrosive (corrosion resistant) rare-earth sintered magnet.\n\n[0032]FIG. 1 shows a schematic configuration for a potentiostat apparatus that can be used to measure the natural electrode potentials of various types of metals and alloys. The path of electron (e -FIG. 1. \n\n[0033]The natural electrode potential of an alloy can be measured by an electrokinetic potential method using the apparatus shown in FIG. 1.  More specifically, a sample alloy electrode (Sample) and a reference electrode (or counter electrode) of Pt are immersed in a solution and a voltage applied between these electrodes is changed. As the applied voltage is raised, a portion of the alloy, which makes up the sample alloy electrode, is ionized, thereby emitting electrons within the sample alloy metal electrode. These electrons then travel toward the counter electrode (i.e., the reference electrode of Pt). In the meantime, the number of electrons passing an ammeter is counted as a current density and the counts are plotted with respect to the applied voltage, thereby obtaining a polarization curve.\n\n[0034]Each of the natural electrode potentials to be mentioned herein was measured under the following conditions: \n\n The surface area of the sample was set to 1 cm 2[0035]An exemplary polarization curve obtained under the measurement conditions such as these is shown in FIG. 2.  Specifically, FIG. 2 shows the polarization curve of an Nd 11.8 Fe 82.2 B 6.0  alloy. In the graph shown in FIG. 2,  the ordinate represents the current density between the electrodes of the potentiostat apparatus and the abscissa represents the potential of the sample electrode. As the potential of the sample electrode is going to be raised from a low level to a high level, the current density decreases gradually and the polarization curve has a local minimum value at a certain potential. This particular potential, at which the current density reaches the local minimum value, is called a \"natural electrode potential (or corrosion potential)\". While that natural electrode potential is being applied, the cell reaction shown in FIG. 1 keeps an equilibrium state.\n\n[0036]The higher the natural electrode potential of an alloy is, the less easily its cell reaction advances. If the potential is raised beyond the natural electrode potential, then the current density starts to increase again. The reason is as follows. While the potential is lower than the natural electrode potential, a cathode reaction advances at the sample electrode. However, once the potential exceeds the natural electrode potential, an anode reaction advances at the sample electrode.\n\n[0037]It has been known for a long time that the corrosion resistance of an R-Fe-B based rare-earth sintered magnet can be improved by adding Co to the material alloy of the magnet. However, nobody has ever succeeded in clarifying its reasons fully.\n\n[0038]By actually plotting the polarization curve of an Nd-Fe-B based rare-earth magnet alloy to which Co was added, the present inventors confirmed that the addition of Co increased the natural electrode potential. FIG. 3 shows the polarization curve of an Nd 11.8 Fe 82.2-x Co x B 6.0  alloy (where x=0, 5, 10, 20 or 50) obtained by substituting Co for a portion of Fe in an Nd 11.8 Fe 82.2 B 6.0  alloy. As is clear from FIG. 3, as the percentage (x) of Co substituted increases, the natural electrode potential of the Nd 11.8 Fe 82.2-x CO x B 6.0  alloy increases. The reason is believed to be as follows. Specifically, Fe has a standard oxidation-reduction potential of -0.440 V, while Co has a standard oxidation-reduction potential of -0.277 V. Thus, Co would be less likely to produce an electrochemical reaction than Fe does. And the anode reaction itself should be minimized by the Co substitution.\n\n[0039]It is believed that when Co is added to the material alloy of a rare-earth sintered magnet, Co should also be present in the grain boundary phase of the rare-earth sintered magnet and various intermetallic compounds should be produced in the grain boundary phase due to bonding of Co with the rare-earth element R. If there was a big difference between the natural electrode potentials of those intermetallic compounds existing in the grain boundary phase and that of the alloy making up the main phase, then the corrosion resistance might deteriorate. This is because a cell reaction would advance even if the main phase alloy had a high natural electrode potential.\n\n[0040]FIG. 4 shows the natural electrode potentials of those intermetallic compounds, which should be produced in the grain boundary phase of the sintered magnet to be finally obtained by adding Co to the material alloy, and the natural electrode potential of the main phase alloy in which a portion of Fe is replaced with Co (i.e., Nd 11.8 Fe 82.2-x CO x B 6.0 ). Based on the results shown in FIG. 4,  it is possible to estimate how easily the main phase alloy and grain boundary phase alloy are subject to corrosion.\n\n[0041]First, look at the natural electrode potential of the main phase alloy (i.e., Nd 11.8 Fe 82.2-x Co x B 6.0 ). As can be seen from FIG. 4,  in the range where the percentage x of Co substituted is 50 at% or less, as the percentage x of Co substituted increases, the natural electrode potential increases, too.\n\n[0042]Next, referring to FIG. 5,  shown is the relationship between the variation in weight and the natural electrode potential when the alloy in which Co is substituted for a portion of Fe (i.e., Nd 11.8 Fe 82.2-x Co x B 6.0  alloy) is subjected to a high-temperature high-humidity test (e.g., at a temperature of 80 °C and a relative humidity of 90%). As can be seen from FIG. 5,  as the natural electrode potential increases, the alloy has a decreased variation in weight. This weight variation indicates the degree of corrosion of the alloy. That is to say, the smaller the weight variation, the smaller the degree of its corrosion would be.\n\n[0043]In view of these considerations, it can be seen that as the natural electrode potential of the alloy increases with the Co substitution, the corrosion becomes more and more unlikely to advance.\n\n[0044]Next, the relationship between the natural electrode potentials of the intermetallic compounds produced in the grain boundary phase and that of the main phase alloy will be analyzed with reference to FIG. 4 again. As shown in FIG. 5,  the metal Nd (Nd-metal) has as low a natural electrode potential as about -1.40 V, whereas Nd 11.8 Fe 82.2 B 6.0  as the main phase has a relatively high natural electrode potential of about -0.82 V. Accordingly, simply supposing the main phase alloy is Nd 11.8 Fe 82.2 B 6.0  and the grain boundary phase alloy is the metal Nd, the difference in natural electrode potential between them is so large as about 0.7 V that corrosion is easily caused by the cell reaction. However, if about 30 at% of Co is added to the material alloy, then the main phase alloy becomes Nd 11.8 Fe 82.2-x Co x B 6.0  and the grain boundary phase alloy contains a lot of Nd 3 Co (with a natural electrode potential of -0.66 V). In that case, the potential difference between the main and grain boundary phases is so small that corrosion resulting from the cell reaction hardly occurs between them.\n\n[0045]As described above, when Co is added, a portion of Fe in the main phase is replaced with Co to raise the natural electrode potential of the main phase, while an Nd-Co based compound, having a higher natural electrode potential than the metal Nd, is easily produced in the grain boundary phase. Then, there is just a small difference in natural electrode potential between them, and therefore, corrosion due to cell reaction becomes unlikely to occur.\n\n[0046]As can be seen from these results, the corrosion can be minimized by setting the natural electrode potential of the main phase alloy high and by reducing the difference in natural electrode potential between the main phase and grain boundary phase alloys.\n\n[0047]By appropriately selecting a combination of additive metal elements other than Co in view of these considerations, the present inventors succeeded in obtaining a rare-earth sintered magnet exhibiting an even higher degree of corrosion resistance. More specifically, the present inventors conceived the basic idea of our invention in the discovery that the corrosion resistance of a rare-earth sintered magnet could be increased significantly by making its main phase of an alloy in which Cr, Ni, and/or Al are substituted for a portion of Fe and in which C is substituted for a portion of B. Hereinafter, this point will be described in further detail.\n\n[0048]First, an Nd 11.8 Fe 82.2-x M x B 6.0  alloy (where M=Co, Ni, Cr or Al) was prepared as a base alloy and the natural electrode potential of the resultant alloy was measured. FIG. 6 shows the relationship between the substituted percentage x and the natural electrode potential. The following can be seen from FIG. 6: \n\n As the substituted percentage x increases, the natural electrode potential increases, too. Supposing the substituted percentage x is constant, the highest natural electrode potential ever can be obtained when Cr is substituted for a portion of Fe. Even if Ni is substituted for a portion of Fe, a substituted percentage x of 5 at% or more can result in a natural electrode potential comparable to that obtained by substituting Co for a portion of Fe. \n\n[0049]Next, it will be described how the natural electrode potential can be further increased by substituting not only an additive element such as Co for a portion of Fe but also C for a portion of B.\n\n[0050]FIGS. 7, 8 and 9 show the natural electrode potentials of an Nd 11.8 Fe 82.2-x M x B 6.0  alloy in which Co, Ni or Cr is substituted for a portion of Fe (i.e., M=Co, Ni, Cr or Al) and the natural electrode potentials of an Nd 11.8 Fe 82.2-x M x B 6.0-y C y  alloy in which C is also substituted for a portion of B in addition to the former substitution (i.e., M=Co, Ni, Cr or Al). As can be seen from FIGS. 7 through 9,  the substitution of C for B further increases the natural electrode potential significantly in any case. Particularly when Cr and C are added (i.e., the Nd 11.8 Fe 82.2-x Cr x B 6.0-y C y  alloy), the natural electrode potential becomes the highest.\n\n[0051]As described above, if a lot of Cr were added to the material alloy, then the remanence B r  of the magnet would decrease, and therefore the maximum energy product (BH) max  would decrease, too. However, if C is substituted for a portion of B in the main phase alloy, then the corrosion resistance can be kept high and yet the amount of Cr added can be reduced. Nevertheless, if the C added were not used effectively to substitute for B in the main phase alloy but present a lot in the grain boundary phase of the sintered magnet, then the rare-earth element, C, impurity and O 2  would bond together in the grain boundary phase to decrease the sinterability as described above. Once the sinterability has decreased, the sintering process needs to be performed at a high temperature for a long time. Then, the crystal grains would have grown too much in the resultant sintered magnet and the magnet performance would deteriorate. Accordingly, the problems of the prior art cannot be solved just by adding C to the material alloy. Thus, according to the present invention, a structure that never decreases the sinterability is realized by introducing C heavily into the main phase, not into the grain boundary phase.\n\nEMBODIMENTS\n\n[0052]Hereinafter, a rare-earth sintered magnet producing method according to a preferred embodiment of the present invention will be described.\n\nMaterial alloy\n\n[0053]First, a molten alloy is prepared by melting a main phase material alloy within an argon atmosphere by an induction melting process. The main phase alloy preferably has the composition including: \n\n 11 at% to 16 at% of R; 60 at% to 88 at% of T; 0.2 at% to 2.5 at% of Cr; 1 at% to 14 at% of B; and 0.5 at% to 5.0 at% of C. \n\n[0054]In this preferred embodiment, to condense Cr and C in the main phase, an alloy obtained by adding Cr and carbon to an alloy, of which the composition is close to the stoichiometry of an Nd 2 Fe 14 B type compound, is used as the main phase alloy.\n\n[0055]Next, this molten alloy is maintained at 1350 °C and then rapidly cooled by a single roller method, thereby obtaining alloy flakes with a thickness of about 0.3 mm, for example. The rapid solidification process may be performed at a roller peripheral velocity of about 1 m/s, a cooling rate of 500 °C/s and a supercooling temperature of 200 °C. The rapidly solidified alloy block obtained in this manner is pulverized into flakes with sizes of 1 mm to 10 mm before subjected to the next hydrogen pulverization process. In this manner, a main phase alloy, including 50 vol% or more of R 2 T 14 Q type tetragonal compound and Cr, B and C as essential elements, can be prepared.\n\n[0056]If the concentration of Cr in the main phase alloy (i.e., the mass percentage to the overall main phase alloy) were less than 0.2 at%, then the corrosion resistance could not be improved effectively. Thus, the Cr concentration is preferably at least 0.2 at%. However, if the Cr concentration exceeded 2.5 at%, then the remanence B r  of the sintered magnet would decrease. For that reason, the Cr concentration is preferably at most 2.5 at%. Consequently, the Cr concentration is preferably 0.2 at% to 2.5 at%, and more preferably 0.3 at% to 2.0 at%.\n\n[0057]Also, if the C concentration (i.e., the mass percentage to the overall main phase alloy) were less than 0.5 at%, then the corrosion resistance could not be improved effectively. Thus, the C concentration is preferably at least 0.5 at%. However, if the C concentration exceeded 4.5 at%, then the remanence B r  of the sintered magnet would decrease. For that reason, the C concentration is preferably at most 4.5 at%. Consequently, the C concentration is preferably 0.5 at% to 4.5 at%, and more preferably 1.0 at% to 4.0 at%.\n\n[0058]To the main phase alloy having such a composition, not just Cr and C but also 0.1 at% to 10 at% of Co, Ni and/or Al or Cu may be added. Among other things, the addition of Co is preferred because it further improves the corrosion resistance effectively.\n\n[0059]The additive C should not bond to the rare-earth element R. However, if the alloy is prepared by a rapid cooling process such as a strip casting process, then the production of the R-C compound can be minimized. More specifically, if the melt of the material alloy having the composition described above is rapidly cooled and solidified at a rate of 100 °C/s to 10,000 °C/s, then the additive C will not bond to the rare-earth element R easily but substitute for a portion of B efficiently.\n\n[0060]It should be noted that the main phase alloy may include multiple alloys with different compositions. For example, the main phase alloy may include a first alloy including 0.8 mass% to 1.0 mass% of Q (i.e., the sum of B and C) and a second alloy including 1.2 mass% to 1.4 mass% of Q (i.e., the sum of B and C). In that case, the process step of mixing the first and second alloys together needs to be carried out. However, that mixing process step may be performed either during the process step of finely pulverizing the main phase alloy or during the process step of coarsely pulverizing it.\n\n[0061]By mixing together the first and second alloys including Q in different percentages, an R 2 T 17  phase produced from the first alloy will bond to excessive B or C resulting from the second alloy, and therefore, the C added is more likely to remain in the main phase. Accordingly, it is possible to prevent an Nd-O-C compound (to be produced when C of the main phase alloy reaches the grain boundary phase) from being produced, thus minimizing deterioration in magnetic properties.\n\n[0062]Furthermore, by adding the second alloy with a relatively high Q percentage to the first alloy, the mole fractions of B and C will increase. As a result, the R 2 T 17  phase will change into an R 2 T 14 B phase, thus improving the magnet performance (e.g., coercivity) effectively.\n\n[0063]In this preferred embodiment, not only the main phase alloy described above but also a liquid phase alloy including 60 at% to 80 at% of R and 20 at% to 40 at% of Co are prepared. The liquid phase alloy melts faster than the main phase alloy in the sintering process, thus contributing to advancing the liquid phase sintering. The liquid phase alloy finally makes up the grain boundary phase of the sintered magnet.\n\n[0064]The present invention is characterized by condensing Cr and C, in particular, in the main phase while reducing the C concentration in the grain boundary phase to as low a level as possible. This is because if the grain boundary phase had a high C concentration, the sinterability would decrease. For that reason, an alloy to which no C is added intentionally is preferably used as the liquid phase alloy.\n\n[0065]Also, according to the present invention, to reduce the difference in natural electrode potential between the main and grain boundary phases, an R-Co alloy, including a rare-earth element R and Co as its main ingredients, is used as the liquid phase alloy. Then, an intermetallic compound having a natural electrode potential of -0.70 V or more can be easily produced in the grain boundary phase of the resultant sintered magnet. The grain boundary phase preferably includes R 3 Co, while the liquid phase alloy preferably has a composition that produces R 3 Co easily. Accordingly, the rare-earth element R in the liquid phase alloy preferably has a concentration of 60 at% to 80 at% and Co preferably has a concentration of 20 at% to 40 at%. More specifically, an alloy including 60 at% of Nd and 40 at% of Co may be used.\n\n[0066]R in the liquid phase alloy plays a key role in producing the liquid phase and Co, bonding to the rare-earth element R, contributes to producing a compound of which the natural electrode potential is close to that of the main phase. If the concentration of Co in the liquid phase alloy were less than 20 at%, the natural electrode potential of the resultant grain boundary phase would not become sufficiently high and the difference in natural electrode potential between the main and grain boundary phases would be too big to exhibit the corrosion resistance sufficiently. Nevertheless, if the concentration of Co in the liquid phase alloy exceeded 40 at%, then ferromagnetic RCO 2  would be easily produced in the grain boundary phase of the resultant sintered magnet, thus deteriorating the magnet performance unintentionally.\n\n[0067]The liquid phase alloy having the composition described above, as well as the main phase alloy described above, can be prepared by a strip casting process or any other suitable rapid cooling process.\n\n[0068]Also, even if other elements such as C, B and Cr were present in the liquid phase alloy in addition to the rare-earth element and Co, there would be no problems as long as their sum is 30 at% or less of the overall liquid phase alloy.\n\nFirst pulverization process\n\n[0069]The main phase alloy and liquid phase alloy that have been coarsely pulverized into the flakes are stuffed into a plurality of material packs (made of stainless steel, for example). After the packs have been placed on a rack, the rack with the packs is loaded into a hydrogen furnace. Then, the lid of the hydrogen furnace is closed to start a hydrogen decrepitation process (which will also be referred to herein a', '技术领域 \n\n [0001] 稀土类烧结磁铁及其制造方法技术领域本发明涉及稀土类烧结磁铁及其制造方法。 \n\n  背景技术 \n\n [0002] 稀土合金烧结磁体(永磁体)通常是通过将稀土合金粉末压制,烧结所得粉末压块然后对烧结压块进行时效处理来制造的。 当前在各种应用领域中广泛使用的永磁体包括基于稀土钴的磁体和基于稀土铁硼的磁体。 其中,稀土-铁-硼基磁体(在本文中将被称为“ R-Fe-B-基磁体”,其中R是包括Y,Fe的稀土元素中的至少一种是铁。  B是硼)在各种类型的电子设备中越来越多地使用。 这是因为基于R-Fe-B的磁体表现出的最大能量乘积高于各种其他类型的磁体中的任何一种,但是相对便宜。 \n\n [0003] 基于R-Fe-B的烧结磁体包括主要由四方R 2 Fe 14 B化合物组成的主相,包括Nd的富R相和例如富B相。 例如,在美国专利号4,770,723和4,792,368中描述了一种基于R-Fe-B的烧结磁体。 \n\n [0004] 从日本专利申请JP 01-219142中已知一种如权利要求1的前序部分所述的另一种稀土烧结磁体和一种如权利要求5的前序部分所述的制备稀土烧结磁体的方法。 \n\n [0005] 在现有技术中,已经通过铸锭法将R-Fe-B基合金制备为用于这种磁体的材料。 通常,在锭铸法中,通过感应加热法使作为起始原料的稀土类金属,电解铁和硼铁合金熔融,然后在铸模中将这样得到的熔体进行比较缓慢的冷却,从而制备铸件。 合金锭。 \n\n [0006] 近来,快速淬火工艺,例如带材铸造工艺或离心铸造工艺,在本领域引起了很多关注。 在快速淬火过程中,熔融合金与单个冷却辊或双冷却辊,旋转的冷却盘或旋转的圆柱形铸模的外表面或内表面接触并相对快速地冷却和固化, 从而由熔融合金制成比合金锭薄的快速固化合金。 以这种方式制备的快速凝固的合金在本文中将被称为“合金薄片”。 通过这种快速淬火工艺生产的合金薄片通常具有约0.03mm至约10mm的厚度。 根据快速淬火工艺,熔融合金从已经与冷却辊的表面接触的表面开始固化。 熔融合金的该表面在本文中将被称为“辊接触表面”。 因此,在快速淬火过程中,柱状晶体从辊接触​​表面沿厚度方向生长。 结果,通过带钢铸造工艺或任何其他快速淬火工艺制成的快速凝固的合金具有包括R 2 Fe 14 B结晶相和富R相的结构。  R 2 Fe 14 B结晶相通常具有约0.1μm至约100μm的短轴尺寸和约5μm至约500μm的长轴尺寸。 另一方面,富R相是包括相对较高浓度的稀土元素R的非磁性相,并且具有约10μm的厚度(对应于晶界的宽度)或大于或等于10μm。  R 2 Fe 14 B晶相之间的晶界中分散的元素较少。 \n\n [0007] 与通过常规的铸锭法或压铸法制得的合金(这种合金在本文中称为“锭合金”)相比,快速固化的合金在较短的时间内(即在 淬灭率10 2 [0008] 通过执行以下处理步骤获得要压实的合金粉末:将通过上述任何一种方法制备的合金块粗粉碎,例如通过氢吸藏法和/或各种机械研磨法(例如 ,使用磁盘研磨机); 然后,例如使用喷射式粉碎机通过干磨法将所得的粗粉(平均粒径为10μm〜500μm)微粉碎。 \n\n [0009] 被压实的R-Fe-B基合金粉末优选具有1.5μm至6μm的平均粒径以实现足够的磁性能。 应当指出,粉末的“平均粒径”在本文中是指质量中值直径(MMD),除非另有说明。 \n\n [0010] 通过上述方法制造的稀土类烧结磁铁的耐腐蚀性差并且容易生锈,这是一个严重的问题。 因此,为了提高耐腐蚀性,需要通过镀覆或蒸镀技术在烧结磁铁的表面设置涂膜。 然而,提供这样的涂膜的工艺步骤不利地增加了制造成本。 因此,对具有改善的耐腐蚀性的磁体合金的需求不断增加。 \n\n [0011] 本申请的申请人发现,通过在其主相中添加Cr,可以提高稀土类烧结磁体的耐腐蚀性,并且在日本特开平4-268051号公报中公开了该发现。 但是,如果添加足够多的Cr以充分提高耐蚀性,则磁体的剩磁B r将减小,因此最大能量乘积(BH)max也将减小。 另外,在烧结磁铁的晶界中,即使添加Cr也不能充分提高耐蚀性。 \n\n [0012] 同时,还提出了通过在烧结磁体的晶界相中冷凝碳(C),以使主相被具有较高C浓度的晶界相包围的方法,从而提高耐腐蚀性。 公开号4-268051)。 然而,根据该技术,添加的C很可能在晶界结合至稀土元素R,例如Nd,从而容易降低烧结性。 \n\n [0013] 为了克服上述问题,本发明的主要目的是提供一种具有优异的耐腐蚀性和烧结性的稀土类烧结磁体及其制造方法。 \n\n  发明内容 \n\n [0014] 为了解决上述课题,提出了根据权利要求1所述的稀土类烧结磁铁。 \n\n [0015] 在一个优选的实施方式中,全部晶界相的50at%至90at%是Co。 \n\n [0016] 在另一个优选的实施方案中,晶界相包括R 3 Co化合物。 \n\n [0017] 在另一个优选的实施方案中,稀土烧结磁体包括12原子%至18原子%的R,60原子%至88原子%的T,0.1原子%至2.4原子%的Cr,0.5原子%至13原子%的Cr。  B,以及C的0.4 at%至4.5 at%。 \n\n [0018] 另外,为了解决上述课题,提出了根据权利要求5的稀土类磁铁的制造方法。 \n\n [0019] 在一个优选的实施方案中,主相合金包含11at%至16at%的R,60at%至87at%的T,0.2at%至2.5at%的Cr,1at%至14at%的B,  C为0.5原子%至5.0原子%,并且可选地0.1原子%至10原子%的Co,Ni和/或AL或Cu。 \n\n [0020] 在另一个优选的实施方式中,将包含0.8质量%至1.0质量%的Q的第一合金和包含1.2质量%至1.4质量%的Q的第二合金用作主相合金。 第一和第二合金的重量比优选限定在3∶1至1∶3的范围内。 \n\n [0021] 在另一个优选的实施方案中,液相合金包含60at%至80at%的R和20at%至40at%的Co。 \n\n [0022] 在另一个优选的实施方案中,液相合金与主相和液相合金之和的比例被限定在2体积%至20体积%的范围内。 \n\n [0023] 在另一个优选的实施方案中,该方法进一步包括以下步骤:制备用于主相合金的材料合金的熔体,并且以100℃/ s至10,000℃/ s的速率冷却和固化该材料合金的熔体。 \n\n  附图说明 \n\n [0024]  图。  1个  图1示出了用于测量自然电极电势(即恒电位仪)的设备的配置。  图。  2  图5是表示Nd 11.8 Fe 82.2 B 6.0合金的极化曲线的图。  图。  3  图1是示出Nd 11.8 Fe 82.2-x CO x B 6.0合金(其中x = 0、5、10、20或50)的极化曲线的图。  图。  4  图6是表示对于其中一部分Fe被Co置换的主相合金Nd 11.8 Fe 82.2-x CO x B 6.0而言,自然电极电位与Co置换率之间的关系的曲线图。 被包括在晶界相中。  图。  5  图2是表示腐蚀试验中的重量变化与自然电极电位之间的关系的图。  图。  6  图5是表示在Fe被Co,Ni,Cr和Al置换的主相合金中,自然电极电位与置换率之间的关系的图。  图。  7  图5是表示Co-取代合金和Co + C-取代合金中的自然电极电位与取代率的关系的图。  图。  8  图2是表示Ni-取代合金和Ni + C取代合金中的自然电极电位与取代率的关系的图。  图。  9  图5是表示Cr-取代合金和Cr + C-取代合金中的自然电极电位与取代率的关系的图。  图。  10  图2是显示氢粉碎(或爆破)过程的图。 \n\n  实施本发明的最佳模式 \n\n [0025] 根据本发明的稀土烧结磁体包括R 2 T 14 Q型四方化合物(其中R是至少一种稀土元素,T是至少总是包含Fe的过渡金属元素,并且Q是硼和 (或碳)作为主相和围绕主相的晶界相。 在这种情况下,稀土元素包括Y(钇)。 \n\n [0026] 本发明的主要特征在于,作为主相的R 2 T 14 Q型四方化合物包括Cr(其代替Fe的一部分)和碳(C)(其代替硼的一部分)(B)。 作为各自的必需元素,主相的C浓度比晶界相的C浓度高。 \n\n [0027] 应该注意的是,如果存在“ Cr代替一部分Fe”,则意味着Cr原子与存在Fe原子的那些位置存在于R 2 T 14 Q型四方化合物晶体的相同位置。  。 因此,在特定位置上,Fe原子实际上不必被Cr原子取代。 同样,如果存在“ C取代了B的一部分”,则表示Cr原子与存在B原子的R 2 T 14 Q型四方化合物晶体的位置类型相同 。 因此,在特定位置,B原子实际上不必被C原子取代。 \n\n [0028] 具有这种组成的根据本发明的烧结磁体,需要的添加剂Cr的量应不会引起磁体性能的严重降低(例如,占整个磁体的2at%或更少)。 而且,磁体还包含C作为另一种添加剂,但是可以在不降低其烧结性的情况下显着提高耐腐蚀性。 \n\n [0029] 稍后将详细描述添加Cr和C并且使主相中的Cr和C的浓度高于晶界相中的浓度的优选方法。 首先,将基于实验结果详细地描述R 2 T 14 Q型四方化合物如何通过添加Cr和C来改善其耐腐蚀性。 \n\n  耐腐蚀性和 \n\n  自然电极电位 \n\n [0030] 一般而言,如果存在具有将自身定义为比以前的金属更贵重的金属的杂质金属,则金属的腐蚀会加剧。 这是因为杂质金属用作局部阴极,因此更容易引起电池反应。 因此,为了提高稀土类磁铁的耐腐蚀性,有效的是增加磁铁的材料合金的自然电极电位。 同时,还可以认为稀土烧结磁体的腐蚀通过由主相和晶界相之间的电势差引起的电池反应而进行。 \n\n [0031] 但是,关于应添加何种元素以提高耐蚀性,目前尚无指导性的定量估算方法。 因此,本发明人通过绘制它们的极化曲线,定量地估计了构成主相和晶界相的各种类型合金​​的电势,从而分析了防腐蚀(耐腐蚀)稀土烧结磁体的结构。 \n\n [0032]  图。  1个  图1显示了恒电位仪设备的示意性配置,该设备可用于测量各种类型的金属和合金的自然电极电势。 电子的路径(e-  图。  1个 . \n\n [0033] 合金的自然电极电位可以通过电动势法使用图1所示的装置进行测定。  图。  1个 .  更具体地,将Pt的样品合金电极(Sample)和参考电极(或对电极)浸入溶液中,并改变在这些电极之间施加的电压。 随着施加电压的升高,构成样品合金电极的一部分合金被电离,从而在样品合金金属电极内发射电子。 这些电子然后向对电极(即,Pt的参比电极)行进。 同时,将通过安培计的电子的数量计数为电流密度,并相对于施加的电压绘制该计数,从而获得极化曲线。 \n\n [0034] 在以下条件下测量此处要提及的每个自然电极电势: \n\n  样品的表面积设置为1 cm 2 [0035] 在诸如此类的测量条件下获得的示例性极化曲线如图所示。  图。  2 .  特别,  图。  2  示出了Nd 11.8 Fe 82.2 B 6.0合金的极化曲线。 在图中所示  图。  2 ,  纵轴表示恒电位仪装置的电极之间的电流密度,横轴表示样品电极的电位。 随着样品电极的电势将从低电平升高到高电平,电流密度逐渐降低,并且极化曲线在一定电势下具有局部最小值。 电流密度达到局部最小值时的该特定电势称为“自然电极电势(或腐蚀电势)”。 当施加自然电极电位时,电池反应如图  图。  1个  保持平衡状态。 \n\n [0036] 合金的自然电极电位越高,其电池反应进行的越难。 如果电势升高到超过自然电极电势,则电流密度再次开始增加。 原因如下。 当该电势低于自然电极电势时,阴极反应在样品电极处进行。 但是,一旦电位超过自然电极电位,则阳极反应在样品电极上进行。 \n\n [0037] 长期以来,已知通过在磁体的材料合金中添加Co,可以提高R-Fe-B系稀土类烧结磁体的耐腐蚀性。 但是,没有人成功地完全阐明其原因。 \n\n [0038] 通过实际绘制其中添加了Co的Nd-Fe-B基稀土磁体合金的极化曲线,本发明人证实了添加Co增加了自然电极电势。  图。  3  图1示出了通过用Co代替Nd 11.8 Fe 82.2 B 6.0合金中的一部分Fe而获得的Nd 11.8 Fe 82.2-x Co x B 6.0合金(其中x = 0、5、10、20或50)的极化曲线。 从显然  图。  3 ,随着Co取代百分比(x)的增加,Nd 11.8 Fe 82.2-x CO x B 6.0合金的自然电极电势增加。 认为原因如下。 具体地,Fe具有-0.440V的标准氧化还原电位,而Co具有-0.277V的标准氧化还原电位。因此,与Fe相比,Co不太可能产生电化学反应。 阳极反应本身应通过Co取代最小化。 \n\n [0039] 据认为,当将Co添加到稀土烧结磁体的材料合金中时,Co也应该存在于稀土烧结磁体的晶界相中,并且由于该原因,在晶界相中会产生各种金属间化合物。 钴与稀土元素R的键合。如果存在于晶界相中的那些金属间化合物的自然电极电位与构成主相的合金的自然电极电位之间存在较大差异,则耐蚀性可能会降低 。 这是因为即使主相合金具有高自然电极电势也将进行电池反应。 \n\n [0040]  图。  4  示出了那些金属间化合物的自然电极电势,其应该在通过向材料合金中添加Co而最终获得的烧结磁体的晶界相中产生,以及其中一部分的主相合金的自然电极电势。 用Co代替Fe(即,Nd 11.8 Fe 82.2-x CO x B 6.0)。 根据结果​​显示  图。  4 ,  可以估计主相合金和晶界相合金容易受到腐蚀的程度。 \n\n [0041] 首先,查看主相合金的自然电极电势(即Nd 11.8 Fe 82.2-x Co x B 6.0)。 从中可以看出  图。  4 ,  在Co的取代百分比x为50at%以下的范围内,随着Co的取代百分比x增加,自然电极电位也增加。 \n\n [0042] 接下来,参考  图。  5 ,  所示为当用Co代替部分Fe的合金(即Nd 11.8 Fe 82.2-x Co x B 6.0合金)进行高温高压处理时,重量变化与自然电极电位之间的关系 -湿度测试(例如,在80°C的温度和90%的相对湿度下)。 从中可以看出  图。  5 ,  随着自然电极电位的增加,合金的重量变化减小。 该重量变化表明合金的腐蚀程度。 也就是说,重量变化越小,其腐蚀程度越小。 \n\n [0043] 鉴于这些考虑,可以看出,随着合金的自然电极电势随Co的取代而增加,腐蚀变得越来越不可能进行。 \n\n [0044] 接下来,将参考以下方法分析在晶界相中产生的金属间化合物的自然电极电位与主相合金的自然电极电位之间的关系。  图。  4  再次。 如图所示  图。  5 , 金属Nd(Nd-金属)的自然电极电势低至约-1.40 V,而作为主要相的Nd 11.8 Fe 82.2 B 6.0具有相对较高的自然电极电势,约为-0.82V。因此,简单地假设 主相合金为Nd 11.8 Fe 82.2 B 6.0,晶界相合金为金属Nd,两者之间的自然电极电位差大至约0.7 V,很容易因电池反应引起腐蚀。 但是,如果向材料合金中添加约30 at%的Co,则主相合金变为Nd 11.8 Fe 82.2-x Co x B 6.0,并且晶界相合金包含大量Nd 3 Co(具有天然电极)。 电位为-0.66 V)。 在那种情况下,主晶界相和晶界相之间的电势差是如此之小,以致在它们之间几乎不会发生由电池反应引起的腐蚀。 \n\n [0045] 如上所述,当添加Co时,主相中的一部分Fe被Co替代以提高主相的自然电极电势,而Nd-Co基化合物具有比金属Nd高的自然电极电势。 容易在晶界相中产生。 然后,它们之间的自然电极电势仅有很小的差异,因此,不太可能发生由于电池反应引起的腐蚀。 \n\n [0046] 从这些结果可以看出,通过将主相合金的固有电极电位设定得较高,并减小主相和晶界相合金之间的固有电极电位差,可以使腐蚀最小化。 \n\n [0047] 考虑到这些考虑,通过适当地选择Co以外的添加金属元素的组合,本发明人成功地获得了具有更高耐腐蚀性的稀土类烧结磁体。 更具体地,本发明人发现了本发明的基本思想,即通过使其中的Cr,Ni和/或Al为合金的主相可以显着提高稀土类烧结磁体的耐腐蚀性。 取代部分Fe,其中C取代部分B。在下文中,将对此进行更详细的描述。 \n\n [0048] 首先,制备Nd 11.8 Fe 82.2-x M x B 6.0合金(其中M = Co,Ni,Cr或Al)作为基础合金,并测量所得合金的自然电极电势。  图。  6  表示取代百分比x和天然电极电势之间的关系。 从以下可以看出  图。  6 : \n\n  随着取代百分比x的增加,自然电极电势也增加。 假设x的替代百分比恒定,那么当Cr替代一部分Fe时,可获得最高的自然电极电势。 即使用Ni代替部分Fe,取代百分比x为5原子%或更高也可以产生与通过用Co代替部分Fe而获得的自然电极电势相当的电势。 \n\n [0049] 接下来,将描述如何不仅通过将诸如Fe之类的添加元素替代为Fe的一部分,而且还通过将C替代为一部分B的替代元素来进一步提高自然电极电势。 \n\n [0050]  无花果 7、8  和 9  表示Nd 11.8 Fe 82.2-x M x B 6.0合金的自然电极电势,其中Co,Ni或Cr代替了部分Fe(即M = Co,Ni,Cr或Al),以及自然电极电势 Nd 11.8 Fe 82.2-x M x B 6.0-y C y合金的一种合金,其中除前一种取代物(即M = Co,Ni,Cr或Al)外,C还取代了一部分B。 从中可以看出  无花果 7至9 ,  在任何情况下,用C代替B都会大大增加自然电极电势。 特别是当添加Cr和C时(即,Nd 11.8 Fe 82.2-x Cr x B 6.0-y C y合金),自然电极电位变为最高。 \n\n [0051] 如上所述,如果向材料合金中添加大量的Cr,则磁体的剩磁B r将减小,因此最大能量积(BH)max也将减小。 但是,如果用C代替主相合金中的一部分B,则可以保持较高的耐蚀性,但是可以减少Cr的添加量。 但是,如果添加的碳不能有效地替代主相合金中的B,而在烧结磁体的晶界相中大量存在,则稀土元素C,杂质和O 2会结合在一起。 如上所述,晶界相降低了烧结性。 一旦烧结性降低,则需要长时间在高温下进行烧结过程。 然后,在所得的烧结磁体中晶粒将生长得过多,并且磁体性能将劣化。 因此,仅通过将C添加到材料合金中就不能解决现有技术的问题。 因此,根据本发明,通过将C大量地引入主相而不是晶界相中来实现永不降低烧结性的结构。 \n\n 实施例 \n\n [0052] 以下,对本发明的优选实施方式的稀土类烧结磁铁的制造方法进行说明。 \n\n  材质:铝合金 \n\n [0053] 首先,通过感应熔化工艺通过在氩气氛中熔化主相材料合金来制备熔融合金。 主相合金优选具有以下组成: \n\n  R的11原子%至16原子%;  T的60at%至88at%;  Cr含量为0.2原子%至2.5原子%;  B的1 at%至14 at%; 和0.5at%至5.0at%的C。 \n\n [0054] 在该优选实施方案中,为了使Cr和C在主相中冷凝,使用通过向合金中添加Cr和碳而获得的合金,该合金的组成接近于Nd 2 Fe 14 B型化合物的化学计量。 主相合金。 \n\n [0055] 接下来,将该熔融合金保持在1350℃,然后通过单辊法快速冷却,从而获得例如厚度约为0.3mm的合金薄片。 快速固化过程可以以约1m / s的辊圆周速度,500℃/ s的冷却速率和200℃的过冷温度进行。 将以此方式获得的快速凝固的合金块粉碎成1mm至10mm大小的薄片,然后进行下一步的氢气粉碎过程。 以这种方式,可以制备包含50vol%或更多的R 2 T 14 Q型四方化合物和Cr,B和C作为必需元素的主相合金。 \n\n [0056] 如果主相合金中Cr的浓度(即占总主相合金的质量百分比)小于0.2at%,则不能有效地提高耐腐蚀性。 因此,Cr浓度优选为至少0.2at%。 但是,如果Cr浓度超过2.5at%,则烧结磁铁的剩磁B r降低。 因此,Cr浓度优选为2.5at%以下。 因此,Cr浓度优选为0.2at%至2.5at%,并且更优选为0.3at%至2.0at%。 \n\n [0057] 而且,如果C浓度(即相对于整个主相合金的质量百分比)小于0.5at%,则不能有效地提高耐腐蚀性。 因此,C浓度优选为至少0.5at%。 但是,如果C浓度超过4.5at%,则烧结磁铁的剩磁B r降低。 因此,C浓度优选为4.5at%以下。 因此,C浓度优选为0.5原子%至4.5原子%,并且更优选为1.0原子%至4.0原子%。 \n\n [0058] 对于具有这种组成的主相合金,不仅可以添加Cr和C,还可以添加0.1at%至10at%的Co,Ni和/或Al或Cu。 其中,优选添加Co,因为其进一步有效地改善了耐腐蚀性。 \n\n [0059] 添加剂C不应与稀土元素R结合。但是,如果合金是通过快速冷却工艺(如带钢铸造工艺)制备的,则R-C化合物的生产可降至最低。 更具体地,如果具有上述组成的材料合金的熔体以100℃/ s至10,000℃/ s的速度快速冷却并固化,则添加剂C将不会结合到稀土元素R上。 容易,但有效地替代了B的一部分。 \n\n [0060] 应当注意,主相合金可以包括具有不同组成的多种合金。 例如,主相合金可以包括包含Q的0.8质量%至1.0质量%(即,B和C之和)的第一合金和包含Q的1.2质量%至1.4质量%的第二合金(即,  B和C的总和)。 在那种情况下,需要执行将第一合金和第二合金混合在一起的工艺步骤。 但是,该混合处理步骤可以在将主相合金微粉碎的过程中进行,也可以在将其粗粉碎的过程中进行。 \n\n [0061] 通过以不同百分比混合包括Q的第一和第二合金,由第一合金产生的R 2 T 17相将键合到由第二合金产生的过量B或C,因此,添加的C更有可能保留 主要阶段。 因此,可以防止产生Nd-O-C化合物(当主相合金的C达到晶界相时产生),从而使磁性能的劣化最小。 \n\n [0062] 此外,通过将具有相对高的Q百分比的第二合金添加到第一合金中,B和C的摩尔分数将增加。 结果,R 2 T 17相将变为R 2 T 14 B相,从而有效地改善了磁体性能(例如,矫顽力)。 \n\n [0063] 在该优选实施方式中,不仅制备上述主相合金,而且制备包括60at%至80at%的R和20at%至40at%的Co的液相合金。 在烧结过程中,液相合金比主相合金熔化得更快,从而有助于推进液相烧结。 液相合金最终构成了烧结磁体的晶界相。 \n\n [0064] 本发明的特征在于特别是在主相中使Cr和C冷凝,同时将晶界相中的C浓度降低到尽可能低的水平。 这是因为,如果晶界相的C浓度高,则烧结性降低。 因此,优选使用故意不添加C的合金作为液相合金。 \n\n [0065] 另外,根据本发明,为了减小主晶界相和晶界相之间的自然电极电位的差异,以稀土元素R和Co为主要成分的R-Co合金被用作液相。 合金。 然后,在所得烧结磁体的晶界相中,可以容易地产生天然电极电位为-0.70V以上的金属间化合物。 晶界相优选包含R 3 Co,而液相合金优选具有容易产生R 3 Co的组成。 因此,液相合金中的稀土元素R优选具有60at%至80at%的浓度,并且Co优选具有20at%至40at%的浓度。 更具体地,可以使用包括60at%的Nd和40at%的Co的合金。 \n\n [0066] 液相合金中的R在产生液相中起着关键作用,与稀土元素R结合的Co有助于产生其自然电极电势接近主相电势的化合物。 如果液相合金中Co的浓度小于20at%,则所得晶界相的天然电极电势不会变得足够高,并且主晶界相和晶界相之间的天然电极电势差将太大。 表现出足够的耐腐蚀性。 然而,如果液相合金中Co的浓度超过40at%,则在所得烧结磁体的晶界相中将容易产生铁磁RCO 2,从而无意中降低了磁体性能。 \n\n [0067] 具有上述组成的液相合金以及上述主相合金可以通过薄带连铸工艺或任何其他合适的快速冷却工艺来制备。 \n\n [0068] 而且,即使稀土元素和Co之外,液相合金中还存在诸如C,B和Cr的其他元素,只要它们的总和为总含量的30at%或更少,就不会有问题。 液相合金。 \n\n  第一次粉碎过程 \n\n [0069] 将已粗粉碎成薄片的主相合金和液相合金填充到多个材料包中(例如,由不锈钢制成)。 将包装放在架子上后,将装有包装的架子装入氢气炉中。 然后,关闭氢炉的盖子以开始氢爆破过程(在本文中也将其称为“氢粉碎过程”)。 氢气粉碎过程可以按照图3所示的温度曲线进行  图。  10 ,  例如。 在图示的例子中  图。  10 ,  首先,进行0.5小时的排气处理步骤I,然后进行2.5小时的氢吸藏处理步骤II。 在氢吸留工序II中,向炉内供给氢气,在炉内产生氢气氛。 该工艺步骤中的氢气压力优选为约200kPa至约400kPa。 \n\n [0070] 随后,在约0Pa至约3Pa的减压下进行脱氢工艺步骤III达5.0小时,然后在向炉内供应氩气的情况下进行原料合金冷却工艺步骤IV达5.0小时。 \n\n [0071] 为了提高冷却效率,优选以以下方式进行冷却工艺步骤IV。 具体地,当在冷却处理步骤IV中炉中的气氛温度仍然相对较高(例如,高于100℃)时,具有常温的惰性气体被供给到氢炉中以用于冷却目的。 此后,当材料合金温度降低到较低水平(例如,100°C或更低)时,惰性气体已经冷却到比常温低的温度(例如,比室温低大约10℃的温度)  °C)供应到熔炉 10.  可以以约10Nm 3的体积流量供应氩气。 [0072] 当材料合金的温度下降到大约20°C至大约25°C时,惰性气体的温度几乎等于常温(即,温度低于室温不超过5°C)。 优选将其供应到氢炉中,直到原料合金的温度达到常温水平为止。 这样,当打开氢炉的盖子时,在炉内不会产生冷凝。 如果水由于任何冷凝而存在于炉中,则水将在抽空处理步骤中冻结或蒸发。 在那种情况下,难以提高真空度,并且进行抽空处理步骤I花费太多时间。 \n\n [0073] 当氢气粉碎过程结束时,优选将粗粉碎的合金粉末在惰性气氛中从氢气炉中卸载,以使其不暴露于空气。 这防止了粗粉碎粉末的氧化或发热,并改善了所得磁体的磁性能。 然后将粗粉碎的材料合金填充到多个材料包中,将其放在架子上。 \n\n [0074] 作为该氢粉碎处理的结果,将主相合金和液相合金中的每一种粉碎成约0.1mm至约几毫米的尺寸,并且平均粒径为500μm或更小。 氢粉碎后,优选将破碎后的材料合金进一步粉碎至更细的尺寸,并用诸如旋转冷却器的冷却系统冷却。 如果卸载的合金材料仍具有较高的温度,则应使用旋转冷却器或其他合适的设备将合金冷却更长的时间。 \n\n [0075] 在通过该氢粉碎工艺获得的粗粉碎粉的表面上,Nd大量暴露。 因此,粉末在该时间点很容易被氧化。 \n\n [0076] 如上所述,可以通过对这两种合金同时进行氢破碎处理来制备主相和液相合金的粗粉碎粉末。 或者,可以将主相和液相合金分别粗粉碎。 \n\n  第二次粉碎过程 \n\n [0077] 接着,将通过第一粉碎工序得到的主相和液相合金的粗粉碎粉末混合在一起,用喷射式粉碎机将其细粉碎。 旋风分级机连接到用于该优选实施例的喷射式粉碎机。 \n\n [0078] 向喷射式粉碎机的粉碎机供给通过第一粉碎工序而被粗粉碎的稀土类合金(即,粗粉碎粉),并通过粉碎机进一步粉碎。 然后,已经通过粉碎机粉碎的粉末通过旋风分级机收集在收集罐中。 \n\n [0079] 在下文中,将进一步详细描述该过程。 \n\n [0080] 送入粉碎机的粗粉碎粉被通过内部喷嘴注入的惰性气体的高速喷射吹散,并与粉碎机内部的高速气流一起旋转。 旋转时,粗粉碎的粉末颗粒相互碰撞,从而被细粉碎。 \n\n [0081] 以这种方式被细粉碎的粉末颗粒通过上升气流被向上引导以到达分级转子,在分级转子处将颗粒分级,从而再次将粗粉末颗粒粉碎。 将已粉碎至预定尺寸或更小的粉末颗粒引入旋风分离器的分级器主体中。 在分级机主体中,较大尺寸(即等于或大于预定粒径)的粉末颗粒沉积在位于分级机主体下方的收集槽中。 另一方面,惰性气体流会吹散超细粉末颗粒,并且大多数粉末颗粒会通过排气管排出。 \n\n [0082] 在该优选实施方案中,在惰性气体中包括非常少量(20,000ppm或更少,例如约10,000ppm)的氧气,以引入到喷射式粉碎机中。 以这种方式,细粉的表面被适度地氧化,使得当细粉的粉末暴露于空气中时不会被过快地氧化或产生太多的热量。 为了获得优异的磁体性能,优选将粉末中的氧浓度调节至按重量计2,000ppm至8,000ppm的范围。 \n\n [0083] 如果粉末中的氧浓度超过8,000ppm,则在下一个烧结过程中在生产氧化物时将消耗稀土元素,并且有助于生产液相的稀土元素的量将减少。 结果,由于主相的百分比的降低,烧结性将降低或磁体性能将降低。 \n\n [0084] 在该优选实施方案中,将粉末的平均粒径(即FSSS粒径)设定为等于1.5μm至10μm,更优选地为2μm至6μm(例如3μm)。 \n\n [0085] 而且,考虑到所得烧结磁体中主相和晶界相的优选体积百分比,液相合金优选占整个合金的2vol%至20vol%。 \n\n  压实过程 \n\n [0086] 在该优选实施方案中,在摇动混合器中将0.3重量%的润滑剂添加到通过上述方法获得的混合粉末中并与之混合,从而用润滑剂涂覆合金粉末颗粒的表面。 作为润滑剂,可以使用用石油溶剂稀释的脂肪酸酯。 在该优选实施方案中,己酸甲酯用作脂肪酯,异链烷烃用作石油溶剂。 己酸甲酯和异链烷烃可以例如以1:9的重量比混合。 这种液体润滑剂不仅可以防止粉末颗粒通过覆盖其表面而被氧化,而且还可以改善被压制粉末的排列程度和粉末的可压实性(即提高压坯密度的均匀性并消除开裂, 碎裂和其他缺陷)。 \n\n [0087] 应当注意,润滑剂不限于示例类型。 例如,作为脂肪酯的己酸甲酯可以用辛酸甲酯,月桂酸甲酯或月桂酸甲酯代替。 优选的溶剂的实例包括石油溶剂,例如异链烷烃和环烷溶剂。 可以在任何时间添加润滑剂:在通过气流粉碎机进行细粉碎过程之前,同时或之后。 代替液体润滑剂或除了液体润滑剂之外,还可以使用固体(干)润滑剂,例如硬脂酸锌。 \n\n [0088] 接下来,使用已知的压制机在对准磁场下将通过上述方法制备的磁性粉末压实。 所施加的取向磁场优选为0.5T至8T(例如1.1T)。 以此方式,密度为约3.5g / cm 3的压块  烧结过程 \n\n [0089] 接下来,烧结该压块。 可以通过在氩气气氛中将成形体在1080℃下加热约4小时来进行烧结过程。 代替在这些条件下执行烧结过程,可以将压块在650°C至1,000°C的温度下保持大约10至240分钟,然后在更高的温度(例如1,000°C至1,100°C)下进一步烧结。  C)。 也就是说,烧结过程可以分两个阶段进行。 在650°C至1,000°C的温度下,液相合金较早熔融以产生液相。 因此,通过执行该两阶段的烧结过程,烧结反应充分有效地进行,以缩短高温处理时间并使在烧结过程中的过度晶粒生长最小化。 \n\n [0090] 以此方式获得的稀土烧结磁体(烧结密度为7.60 g / cm 3) [0091] 另外,稀土类烧结磁体的晶界相的50at%至90at%为Co。其中,晶界相包括R 3 Co化合物。 结果,晶界相的自然电极电势也增加到-0.75 V或更高,并且主晶界相和晶界相之间的自然电极电势差可以减小至最大0.6V。 可以防止由于主相和晶界相之间的细胞反应而产生腐蚀。 \n\n [0092] 可以看出,主晶界相和晶界相的自然电极电势均为-0.75 V或更高,并且主晶界相和晶界相之间的自然电极电势差最大为0.6V。因此,耐腐蚀性提高了,因此 这对于实现即使在其表面未覆盖涂膜的情况下也能够长期有效使用的烧结磁铁具有重要意义。 主相的自然电极电位优选为-0.82V以上,更优选为-0.8V以上。 \n\n [0093] 此外,在晶界相中几乎不产生R-C化合物,并且可以容易地烧结合金。 因此,在烧结磁体中没有晶粒过度生长,并且将使磁体性能劣化的任何化合物的产生最小化。 因此,实现了具有优异的磁性能(例如,剩磁B r为1.1T以上且矫顽力iHc为900kA / m以上)的磁体。 \n\n [0094] 在上述的优选实施方式中,通过使用组成不同的两种合金的方法(即二合金法)来制造烧结磁铁,因此,Cr和C可以高效且容易地集中在主相中。 比晶界相 然而,本发明的烧结磁体不必通过该方法形成,而是可以通过任何其他方法来制造。 \n\n  例 \n\n [0095] 带钢铸造合金 A  作为主相合金,准备了包括Nd的12.35原子%,Fe的75.92原子%,B的3.20原子%,C的3.20原子%,Cr的2.13原子%,Co的3.20原子%的Co。 同时,另一种带钢铸造合金 B  制备了包括60at%的Nd和40at%的Co的液相合金。 \n\n [0096] 这些合金 A  和 B  以9∶1的体积比混合在一起。 通过氢破碎处理将混合物粗粉碎,然后用喷射式粉碎机细粉碎,从而获得平均粒径为3.0μm的细粉碎粉末。 \n\n [0097] 接下来,将该细粉碎的粉末在1.1T的取向磁场下压缩并压实,从而获得生坯密度为4.0g / cm 3的压坯。 [0098] 当测量烧结磁体的磁性能时,其剩磁Br为1.3T,矫顽力iHc为1280kA / m。 此外,即使在实验中暴露于温度为80°C,相对湿度为90%的高温高湿环境中500小时以上,烧结磁体也几乎不生锈(几乎不产生腐蚀)。  。 \n\n  工业适用性  \n\n [0099] 根据本发明,将Cr和C引入到主相中以提高主相合金的自然电极电势,并且在晶粒中形成了其自然电极电势接近其主相的化合物。 界相,从而提供具有优异的烧结性和耐腐蚀性的烧结磁体。 结果,可以获得即使没有表面涂层也不会腐蚀的稀土烧结磁体。');
INSERT INTO `os_patent_instruction_text` VALUES (12991, 22820, '【0001】明 細 書\n\n【0002】希土類焼結磁石およびその製造方法 技術分野\n\n【0003】本発明は、 希土類焼結磁石およびその製造方法に関する。 背景技術\n\n【0004】希土類合金の焼結磁石 （永久磁石） は、 一般に、 希土類合金の粉 末をプレス成形し、 得られた粉末の成形体を焼結し、 時効処理する ことによって製造される。 現在、 希土類 · コバル卜系磁石と、 希土 類 ·鉄 ·硼素系磁石の二種類が各分野で広く用いられている。 なか でち、 希土類 ·鉄 ·硼素系磁石 （以下、 「R— F e— B系磁石」 と 称する。 Rは Yを含 希土類元素、 F eは鉄、 Bは硼素である。 ） は、 種々の磁石の中で最も高い最大磁気エネルギー積を示し、 価格 も比較的安いだめ、 各種電子機器へ積極的に採用されている。\n\n【0005】R-F e— B系焼結磁石は、 主に R2F e14Bの正方晶化合物か らなる主相、 N d等からなる Rリッチ相、 および Bリッチ相から構 成されている。 R— F e— B系焼結磁石は、 例えば、 米国特許第 4， 770, 了 23号および米国特許第 4， 792, 368号の明細書 に記載されている。\n\n【0006】このような磁石となる R— F e— B系合金を作製する めに、 従 来はインゴッ 卜鎵造法が用いられてきた。 一般的なインゴッ 卜鎵造 法によると、 出発原料である希土類金属、 電解鉄およびフエ口ポロ\n\nン合金を高周波溶解し、 得られた溶湯を錡型内で比較的ゆっくりと 冷却することによって合金インゴッ卜が作製される。\n\n【0007】近年、 合金の溶湯を単ロール、 双ロール、 回転ディスク、 ま は 回転円筒錡型の内面などと接触させることによって、 比較的速く冷 却し、 合金溶湯から、 インゴッ卜よりも薄い凝固合金 （ 「合金フレ ーク」 と称することにする。 ) を作製するス卜リップキャス卜法ゆ 遠心錶造法に代表される急冷法が注目されている。 このような急)令 法によって作製され 合金片の厚さは、 一般に、 約 0. 03mm以 上約 1 〇mm以下の範囲にある。 急冷法によると、 合金溶湯は冶却 ロールに接触した面 （ロール接触面） から凝固し始め、 ロール接触 面から厚さ方向に結晶が柱状に成長してゆく。 その結果、 ス卜リツ プキャス卜法などによって作製された急)令合金は、 短軸方向のサイ ズが約 0. 1 m以上約 1 OOwm以下で、 長軸方向のサイズが約 5 m以上約500 m以下のR2F e14B結晶相と、 R2F e14B結晶相の粒界に分散して存在する Rリツチ相とを含有する組織を 持つにいたる。 Rリツチ相は希土類元素 Rの濃度が比較的高い非磁 性相であり、 その厚さ （粒界の幅に相当する） は約 1 0 m以下に なる。\n\n【0008】急冷合金は、 従来のインゴッ卜鎵造法 （金型錶造法） によって作 製された合金 （インゴッ卜合金） に比較して相対的に短い時間 （冷 却速度 ： 1 〇2°C/秒以上、 1 04°CZ秒以下） で冷却されている ため、 組織が微細化され、 結晶粒径が小さいという特徴を有してい る。 また、 粒界の面積が広く、 Rリッチ相は粒界内に広く広がって\n\nいる め、 Rリッチ相の分散性にも優れるという利点がある。 これ らの特徴が故に、 急冷合金を用し、ることによって、 優れた磁気特性 を有する磁石を製造することができる。\n\n【0009】プレス成形に供される合金粉末は、 上記方法などで作製された合 金塊を、 例えば水素吸蔵法および Zまたは種 の機械的粉砕法 （例 えば、 ディスクミルが用いられる） で粉砕し、 得られた粗粉末 （例 えば、 平均粒径 1 0 m〜5 0 0 m ) を例えばジエツ卜ミルを用 いた乾式粉砕法で微粉砕することによって得られる。\n\n【0010】プレス成形に供せられる R— F e— B系合金粉末の平均粒径は、 磁気特性の観点から、 1 . 5 m〜6 mの範囲内にあることが好 ましい。 なお、 粉末の 「平均粒径」 は、 特にことわらない限り、 こ こでは、 質量中 1U径 ( m a s s m Θ d i a n d i a m e t e 「 ： M M D ) を指すことにする。\n\n【0011】上記の方法で作製され 希土類焼結磁石は、 耐腐食性が悪く、 非 常に鎬びゆすいという問題を有している。 耐腐食性を改善するため、 めっきや蒸着によって焼結磁石の表面に保護膜を形成する必要があ る。 このよ な保護膜形成工程は、 製造コス卜を増加させるという 欠点を有しているため、 磁石合金そのものの耐腐食性を向上させる ことが強く求められてし、る。\n\n【0012】本出願人は、 主相に C「を導入することにより、 希土類焼結磁石 の耐腐食性が向上することを見いだし、 特開平 4一 2 6 8 0 5 1号 公報に開示している。 しかし、 耐腐食性を向上させるに足る充分な 量の C rを添加し 場合、 磁石の残留磁束密度 Brが低下し、 その\n\n結果、 最大磁気エネルギー積 （BH)ma xも低下するという問題が ある。 また、 焼結磁石における粒界の耐腐食性は、 C rの添加によ つて充分に向上しないという問題ちある。\n\n【0013】一方、 炭素 （C) を焼結磁石の粒界相に濃縮させ、 C濃度の相対 的に高い粒界相で主相を取り囲むことにより、 耐腐食性を向上させ ることが提案されている （特開平 4一 268051号公報） 。 この 技術によれぱ、 添加した Cは粒界で N dなどの希土類元素 Rと結合 しゅすく、 焼結性が低下するという問題がある。\n\n【0014】本発明は、 上記の諸点に鑑みてなされたものであり、 その主な目 的は、 耐腐食性および焼結性に優れた希土類焼結磁石とその製造方 法を提供することにある。 発明の開示\n\n【0015】本発明の希土類焼結磁石は、 R2T14Q型正方晶化合物 （Rは少 なくとも 1種の希土類元素、 Tは F eを必須とする少なくとも 1種 の遷移金属元素、 Qは硼素および Zま は炭素） の主相と、 前記主 相を取り囲む粒界相とを有する希土類焼結磁石であって、 前記主相 における前記 R2T14Q型正方晶化合物は、 F eの一部を置換した C rと、 硼素の一部を置換し 炭素とを必須元素として含有し、 前 記主相の炭素濃度は、 粒界相の炭素濃度よりも高いことを特徴とす る。\n\n【0016】好ましい実施形態において、 前記粒界相は、 粒界相全体の 5〇原 子％以上 90原子％以下を占める C oを含有している。\n\n好ましい実施形態において、 前記粒界相は R3C o化合物を含ん でし、る。\n\n【0017】好ましい実施形態において、 前記主相における前記 RaTi4Q型 正方晶化合物は、 F eの一部を置換しだ Coを必須元素として含有 してし、る。\n\n【0018】好ましい実施形態において、 Rの含有濃度は 1 2原子％以上 1 8 原子％以下、 Tの含有濃度は 60原子％»以上 88原子《%以下、 C r の含有濃度は 0. 1原子％以上 2. 4原子％以下、 Bの含有濃度は 〇. 5原子％以上 1 3原子 96以下、 Cの含有濃度は 0. 4原子％>以 上 4. 5原子％以下である。\n\n【0019】本発明の希土類焼結磁石は、 R Ti4Q型正方晶化合物 （Rは少 なくとも 1種の希土類元素、 Tは F eを必須とする少なくとも 1種 の遷移金属元素、 Qは硼素およびノまたは炭素） の主相と、 前記主 相を取り囲 ¾粒界相とを有する希土類焼結磁石であって、 前記 R2T14Q型正方晶化合物の自然電極電位がー〇. 75V以上である ことを特徴とする。\n\n【0020】好ましい実施形態において、 前記 R2Tή 4Q型正方晶化合物の自 然電極電位と前記粒界相の自然電極電位との差異が 0. 6 V以下で あることを特徴とする。\n\n【0021】本発明による希土類磁石の製造方法は、 R2T14Q型正方晶化合 物 （Rは少なくとも 1種の希土類元素、 Tは F eを必須とする少な くとも 1種の遷移金属元素、 Qは硼素および/または炭素） の主相 と、 前記主相を取り囲 粒界相とを有する希土類焼結磁石の製造方\n\n法であって、 R z T4Q型正方晶化合物を全体の 5〇体積％以上含 み、 C r、 硼素、 および炭素を必須元素として含有する主相用合金, ならびに、 Rおよび C oを含有する液相用合金の粉末を用意するェ 程と、 前記粉末を焼結し、 それによつて、 前記主相の炭素濃度が前 記粒界相の炭素濃度よりも高い希土類焼結磁石を作製する工程とを 好ましい実施形態では、 前記主相用合金における Rの含有濃度は 1 1原子％以上 1 6原子％以下、 Tの含有濃度は 6 0原子％以上 8 了原子％以下、 C rの含有濃度は 0. 2原子％以上 2. 5原子％以 下、 Bの含有濃度は 1原子％以上 1 4原子％以下、 Cの含有濃度は 0. 5原子％以上 5. 0原子％以下である。\n\n【0022】好ましい実施形態において、 前記主相用合金として、 0. 8質 量％以上 1 . 0質量％以下の Qを含有する第 1 合金と、 1 . 2質 量％以上 1 . 4質量％以下の Qを含有する第 2合金とを用いる。 ま た、 第 1合金と第 2合金の重量比を 3 ： 1〜1 ： 3の範囲に設定す ることが好ましい。\n\n【0023】好ましい実施形態では、 前記液相用合金における Rの含有濃度は 6 0原子％>以上 8 0原子％以下、 C oの含有濃度 2 0原子％以上 4 0原子％以下である。\n\n【0024】好ましい実施形態では、 前記主相用合金および前記液相用合金の 合計に対する前記液相用合金の比は、 2体積％以上 2 0体積％以下 の範囲内に設定される。\n\n【0025】好ましい実施形態では、 前記主相用合金のため原料合金の溶湯を\n\n用意する工程と、 前記原料合金の溶湯を 1 00°〇/秒以上 1 0〇〇 o°cz秒以下の速度で泠却し、 凝固させる工程とを更に含む。 図面の簡単な説明\n\n【0026】図 1は、 自然電極電位を測定するだめの装置 （ポテンシヨスタツ 卜） の構成を示す図である。\n\n【0027】図 2は、 Nd . 8 F e s2. 2 B 6.0合金の分極曲線を示すグラフ である。\n\n【0028】図 3は、 N d8F e82.2—XC oxB6. 0合金 （ X二 0、 5、 1 0、 20、 50) の分極曲線を示すグラフである。\n\n【0029】図 4は、 Coによって F eの一部が置換された主相合金 （Nc^ 1.8F e82.2_xCoxB6. o および粒界相に含まれ得る金属間化 合物の自然電極電位と C o置換量との関係を示すグラフである。 図 5は、 腐食試験による重量変化量と自然電極電位との関係を示 すグラフである。\n\n【0030】図 6は、 Co、 N i、 C r、 および A 1で F eを置換した主相合 金における自然電極電位と置換量との関係を示すグラフである。 図了は、 C o置換合金および C o + C置換合金における置換量と 自然電極電位との関係を示すグラフである。\n\n【0031】図 8は、 N i置換合金および N i + C置換合金における置換量と 自然電極電位との関係を示すグラフである。\n\n【0032】図 9は、 C「置換合金および C r +C置換合金における置換衋と 自然電極電位との関係を示すグラフである。\n\n図 1 〇は、 水素粉砕処理 （脆化処理） のプロセスを示すグラフで め\" έ)0発明を実施する めの最良の形態 本発明の希土類焼結磁石は、 R2T14Q型正方晶化合物 （Rは少 なくとも 1種の希土類元素、 Tは F eを必須とする少なくとも 1種 の遷移金属元素、 Qは硼素および または炭素） の主相と、 主相を 取り囲む粒界相とを有する希土類焼結磁石である。 ここで、 希土類 元素とは、 Y (イツ 卜リウム） を含 ちのとする。\n\n【0033】本発明の主要な特徴は、 主相における R2T14Q型正方晶化合物 が、 F eの一部を置換した C rと、 硼素 （B) の一部を置換し 7ά炭 素 （C) とを必須元素として含有している点と、 主相の C濃度が粒 界相の C濃度よりも高い点にある。\n\n【0034】なお、 本明細書において、 「F eの一部を置換した C r」 とは、 R2T14Q型正方晶化合物の結晶を構成する F eの存在するサイト と同種のサイ卜に C「が存在していることを意味し、 必ずしも、 特 定のサイトにおいて F Θ原子が実際に C r原子によって置換される 必要は無い。 ま 、 同様に、 「Bの一部を置換し C」 とは、 R2T4Q型正方晶化合物の結晶を構成する Bの存在するサイ卜と同 種のサイトに C rが存在していることを意味し、 必ずしも、 特定の サイ卜において B原子が実際に C原子によって置換される必要は無 い。\n\n【0035】このよ な構成を備え 本発明の焼結磁石によれば、 磁石特性の\n\n大きな劣化を招かない程度に c「添加量を抑え （例えば磁石全体の 2原子％以下） 、 かつ、 Cの同時添加による焼結性の低下ち引き起 こすことなく、 耐腐食性を格段に高めることができる。\n\n【0036】C rおよび Cを添加し、 かつ、 主相中における C rおよび Cの濃 度を粒界相中における濃度よりも高くするための好ましい方法につ いては、 のちに詳しく説明する。 ここでは、 まず、 C rおよび Cの 添加によって R2T1 4Q型正方晶化合物の耐腐食性が向上するメカ ニズ厶を、 実験結果に基づいて、 詳細に説明する。\n\n【0037】[耐腐食性と自然電極電位]\n\n【0038】一般に金属の腐食は、 その金属よりも貴となる電位の不純物金属 が存在すると促進される。 不純物金属が局部力ソードとなり、 電池 反 j が起こりやすくなるためである. この め、 希土類磁石を構成 する合金の自然電極電位を高めることが耐腐食性を高めるだめには 有効であると考えられる。 一方、 希土類焼結磁石の腐食は、 主相と 粒界相との間の電位差による電池反 によっても進行すると考えら れる。\n\n【0039】しかしながら、 耐腐食性\'を向上させるために、 どのような種類の 添加元素をどの程度添加するべきかについては、 定量的評価の可能 な指針は存在していなかっ 。 そこで、 本発明者は、 主相および粒 界相を構成する各種合金の電位を分極曲線測定によって定量的に評 価し、 腐食しにくい （鎬びにくい） 希土類焼結磁石の構造を解析し た。\n\n【0040】図 1 は、 各種金属ま は合金の自然電極電位測定に用いることが\n\nできるポテンシヨスタツ卜装置の概略構成を示している。 図 1 は、 試片 （Sample) をアノード電極として用い ときの電子 （e一） の経路を模式的に示している。\n\n【0041】合金の自然電極電位測定は、 図 1 に示す装置を用い 動電位法で 行うことができる。 具体的には、 溶液中に試料合金電極 （Sampl Θ) と P tからなる基準電極 （対極） と浸し、 両電極間に印加する 電圧を変化させる。 印加電圧の上昇に伴って、 試料合金電極を構成 する合金の一部がイオン化し、 電子を試料合金属電極内に放出する： この電子は、 対極 （P tからなる基準電極） に移動する。 このとき、 電流計を通過する電子数を電流密度として計測し、 印加電圧に対す る計測値をグラフにプロッ卜していくと、 分極曲線が得られる。\n\n【0042】本明細書における自然電極電位の測定値は、 いずれち、 以下の測 定条件のもとで得だものである。\n\n【0043】•試料表面積を 1 c m2、 分極幅を 2. OV、 試料表面の平均粗 度を 0. 02 wm以下に設定し、 電圧の掃引速度を 5mVZ秒に設 定する。\n\n【0044】•照合電極としては H g2C 1 2を用い、 対極としては P t電極 を用いる。\n\n【0045】-溶存酸素によるカソ一ド反^を抑制する め、 測定前に溶液を 1 〇分以上窒素でパブリングして溶存酸素を追い出す。 測定中は大 気中から溶液へ酸素が溶けることを防止するため、 液面上で窒素ガ スフローを行う。\n\n【0046】- 溶液として、 2. 5%N a2S04(p H 6. 4) を用い、 溶\n\n液の温度を 2 0 °Cに設定する。\n\n【0047】このような測定条件のちとで得られた分極曲線の一例を図 2に示 す。 図 2は、 N d .8F e8 2.2B6.0合金の分極曲線を示してい る。 図 2のグラフにおける縦軸は、 ポテンシヨスタツ卜装置におけ る電極間の電流密度を示し、 横軸は試料電極の電位を示している。 試料電極の電位を低いレベルから高いレベルに上昇させていくと、 電流密度は徐々に小さくなり、 ある電位で分極曲線は極小値を示す c この電流密度が極小となるときの電位は 「自然電極電位 （腐食電 位） 」 と称されている。 自然電極電位が与えられているとき、 図 1 に示す電極反 は平衡状態となる。\n\n【0048】合金の自然電極電位が高いほど、 電池反麻が進行しにくくなる。 自然電極電位よりも高いレベルに電位を上昇させてゆくと、 再び電 流密度が上昇する。 自然電極電位よりも電位が低いとき、 試料電極 ではカソ一ド反麻が進行し、 自然電極電位よりも電位が高くなると、 試料電極ではアノード反 が進行するからである。\n\n【0049】従来より、 R— F e— B系希土類焼結磁石の原料合金に C oを添 加することにより、 焼結磁石の耐腐食性が改善されることが知られ ている。 しかしながら、 その理由の詳細については、 今まで明らか にはなっていなかった。\n\n【0050】本発明者は、 C oを添加し N d— F e— B系希土類磁右合金の 分極曲線を実際に測定することにより、 C oの添加が自然電極電位 を上昇させることを確認した。 図 3は、 N d i8F e8 2.2B6. 0 合金における F eの一部を C oで置換した N d1 1. 8 F θ8 2.2—x\n\nCoxB6. 。合金 （x二〇、 5、 1 0、 20、 50) の分極曲線を 示している。 図 3から明らかなように、 Co置換量 （X ) の増加に 伴い、 Nd^.8F Θ82.2_xCoxB6. o合金の自然電極電位が上 昇している。 この理由は、 F eの標準酸化還元電位が一〇. 440 Vであるのに対し、 C oの標準酸化還元電位が一〇. 2了了 Vであ るため、 F eよりも Coの方が電気化学反廂を生じさせにくく、 C o置換によってアノード反 iiSiそのものが抑制されるためであると考 えられる。\n\n【0051】希土類焼結磁石の原料合金に C oを添加しだ揚合、 希土類焼結磁 石の粒界相にも C oが存在し、 粒界相において Coと希土類元素 R とが結合した各種金属間化合物が形成されていると考えられる。 こ のよ Οな粒界相に存在する金属間化合物の自然電極電位と主相を構 成する合金の自然電極電位との差が大きければ、 主相合金の自然電 極電位が高くとも、 主相と粒界相との間で電池反 が進行するため, 耐腐食性が劣化するおそれがある。\n\n【0052】図 4は、 C oを原料合金に添加することによって最終的に得られ る焼結磁石の粒界相に形成されると考えられる金属間化合物の自然 電極電位と、 Coによって F eの一部が置換され 主相合金 （Nd 1 1.8F Θ82.2_xCoxB6. o) の自然電極電位とを示している。 図 4から、 主相を搆成する合金と粒界相を構成する合金について、 個 の腐食しやすさを評価することができる。\n\n【0053】まず、 主相合金 （Nd^.8F e82.2—xCoxB6. o の自然電 極電位に着目する。 図 4からわかるよ に、 Co置換量 Xが 50原\n\n子％以下の領域では、 〇 O置換量 Xの増大に伴って自然電極電位が 上昇している。\n\n【0054】次に、 図 5を参照する。 図 5は、 F eの一部を Coで置換し 合 ffi ( N d -1 Ί 3R Θ2 2— χ 〇 x Bs 0^2^) 1(^し、 こ、 问）皿问湿 試験 （温度 8〇°C、 相対湿度 90%) における重量変化と自然電極 電位との関係を示している。 図 5からわかるよ 5に、 自然電極電位 が上昇するにつれて、 合金の重量変化が小さくなつている。 この重 量変化は、 合金における腐食の程度を示しており、 重量変化が小さ いほど、 腐食が少ないことを意味する。\n\n【0055】以上のことから、 C o置換によって合金の自然電極電位が上昇す るほど、 腐食が進行しにくくなることがわかる。\n\n【0056】次に、 再び図 4を参照しながら、 粒界相に形成される金属間化合 物の自然電極電位と主相合金の自然電極電位との関係を検討する。 図 5に示されるように、 Nd金属 （Nd— me t a〗 ） の自然電極 電位は、 一 1. 4〇V程度と低いものであるのに対して、 主相を構 成する N d 8 F Θ82.2B6. 0の自然電極電位は一〇. 82 V程 度と相対的に高い。 従って、 主相合金が N d1^8F e82.2B6. 0 であり、 粒界相合金が N d金属であると単純に仮定すると、 両者の 自然電極電位差は約〇. 了 Vと大きく、 電池反麻による腐食が生じ やすい。 一方、 原料合金に約 30原子％の〇 0を添加した場合、 主 相合金は N d 8 F eS2.2—xCoxB6. oとなり、 粒界相合金は Nd3Co (自然電極電位： 一 0. 66V) を多 【0057】このように、 C oを添加しだ場合、 主相では、 F eの一部が C o で置換され、 それによつて主相の自然電極電位が上昇するとともに、 粒界相では、 N d金属よりも自然電極電位の高い N d— C o系化合 物が生成されやすくなる。 そして、 両者の間で自然電極電位の差が 小さい め、 電池反応になる腐食が生じにくくなると考えられる。 以上の結果から、 主相合金の自然電極電位を高くするともに、 主 相合金と粒界相合金との間における自然電極電位の差異を小さくす ることにより、 腐食抑制が可能になることがわかる。\n\n【0058】本発明者は、 以上の考察から、 C o以外の添加金属元素の組み合 わせを適切に選択することにより、 今まで以上に高い耐腐食性を示 す希土類焼結磁石を得ることに成功した。 より具体的に言えば、 本 発明者は、 C r 、 N i、 および Zまたは A 1 での F Θの一部を置換 するとともに Βの一部を Cで置換した合金によって希土類焼結磁石 の主相を構成すれば、 耐腐食性が著しく向上することを見いだして、 本発明を想到するに至っ 。 以下、 この点をより詳細に説明する。 まず、 ベースとなる合金として、 N d8F e8 2.2—ΧΜΧΒ6. 。合金 （Μ二 C o、 N i 、 C 「、 まだは A 1 ) を作製し、 得られた 合金の自然電極電位を測定し 。 図 6は、 置換量 Xと自然電極電位 との関係を示している。 図 6から、 以下のことがわかる。\n\n【0059】•置換量 Xの増加に伴って、 自然電極電位が上昇する。\n\n【0060】-置換量 Xが一定の場合、 C rで F eを置換した場合に最も高い 自然電極電位を得ることができる。\n\n• N i で F eを置換した場合でも、 置換量 xが 5原子％以上であ れば、 C oで F eを置換し 場合と同等の自然電極電位を得ること ができる。\n\n【0061】次に、 C oなどの添加元素で F eの一部を置換するとともに、 B の一部を Cで置換することによって、 自然電極電位が更に上昇する ことを説明する。\n\n【0062】図 7から図 9は、 それぞれ、 C o、 N i 、 および C rで F eを置 換しだ合金 N d ^ .8F Θ82.2—ΧΜΧΒ6.0合金 （Μ二 C o、 Ν i 、 C r、 または A】） の自然電極電位と、 それらの置換に加えて巳の —部を Cで置換した合金 N d8F e82.2—ΧΜΧΒ6. ο— yCy合 金 （M二 C o、 N i、 C r、 または A〗） の自然電極電位を示して いる。 図了から図 9からわかるように、 いずれの場合でも、 Cによ る B置換が自然電極電位を更に大きく上昇させている。 特に、 C r および Cを添加し 揚合に、 すなわち、 N d8F e82.2—XC rXB6. 。―yCy合金の自然電極電位が最も高くなつている。\n\n【0063】前述したように、 C rを原料合金に多く添加した場合には、 磁石 の残留磁束密度 Brが低下し、 その結果、 最大磁気エネルギー積 (BH)ma xも低下するという問題があった。 しかし、 Cで主相合 金の Bの一部を置換すれば、 耐腐食性を高し、レベルに維持したまま, C r添加量を低減することが可能になる。 ただし、 添加した Cが主 相合金の B置換に有効に使用されず、 焼結磁石の粒界相に多く存在 することになると、 前述のように、 粒界相で希土類元素と Cと不純 物で〇2とが結合して焼結性が劣化するという問題がある。 焼結性\n\n„\n\n【0064】PCT/JP03/07231\n\n【0065】が低下すると、 高温で長時間のあいだ焼結工程を行う必要がある め、 焼結磁石の結晶粒が粗大化し、 磁石特性が劣化してしまうこと になる。 このため、 単に Cを原料合金へ添加しただけでは、 従来技 術の問題は解決しない。 そこで、 本発明では、 粒界相ではなく主相 に Cを高濃度に導入することによって、 焼結性の低下を招かない構 造を実現している。\n\n【0066】(実施形態）\n\n【0067】以下、 本発明による希土類焼結磁石の製造方法について、 好まし い実施形態を説明する。\n\n【0068】[原料合金]\n\n【0069】まず、 主相用の原料合金をアルゴン雰囲気中において高周波溶解 によって溶融し、 合金溶湯を形成する。 このよラな主相用合金とし ては、 以下の組成を有するちのを用いることが好ましい。\n\n【0070】Rの含有濃度は 1 1原子％以上 1 6原子％以下、\n\n【0071】Tの含有濃度は 6 0原子％以上 8 8原子％以下、\n\n【0072】C rの含有濃度は 0. 2原子％以上 2. 5原子％以下、\n\n【0073】Bの含有濃度は 1原子％以上 1 4原子％以下、\n\n【0074】Cの含有濃度は 0. 5原子％以上 5. 0原子％以下。\n\n【0075】本実施形態では、 C rおよび Cを主相中に濃縮する め、 N d2F Θ4B型化合物の化学量論的組成に近い組成を有する合金に C 「および炭素を添加しだ合金を主相用合金として用し、る。\n\n【0076】次に、 この合金溶湯を 1 3 5〇°Cに保持した後、 単ロール法によ つて合金溶湯を急)令し、 例えば厚さ約 0. 3 m mのフレーク状合金\n\n錄塊を得る。 このときの急冷条件は、 例えばロール周速度約 1 m/ 秒、 冶却速度 500°CZ秒、 過冷却 2〇〇°Cとする。 こ oして作製 した急冷合金錶片を、 次の水素粉砕前に、 1〜1 0mmの大きさの フレーク伏に粉砕する。 このようにして、 R2T14Q型正方晶化合 物を全体の 5〇体積％以上含み、 C r、 B、 および Cを必須元素と して含有する主相用合金を用意することができる。\n\n【0077】なお、 主相用合金中における C r濃度 （主相用合金全体に占める 質量比率） が〇. 2原子％»を下回ると、 耐腐食性の改善効果が現れ ないため、 〇 「濃度は〇. 2原子 ¾»以上であることが好ましい。 逆 に、 C rの濃度が 2. 5原子％を超えると、 焼結磁石の残留磁束密 度 Brが低下するため、 C r濃度は 2. 5原子％以下であることが 好ましい。 故に、 C r濃度の好ましい範囲は、 0. 2原子％以上 2. 5原子％以下であり、 より好ましい範囲は 0. 3原子％以上 2. 0 原子％以下である。\n\n【0078】また、 Cの濃度 （主相用合金全体に占める質量比率） が 0. 5原 子％を下回ると、 耐腐食性の改善効果が現れなし、ため、 C濃度は 0. 5原子％>以上であることが好ましい。 逆に、 Cの濃度が 4. 5原 子％を超えると、 焼結磁石の残留磁束密度 Brが低下する め、 C 濃度は 4. 5原子％以下であることが好ましい。 故に、 C濃度の好 ましい範囲は、 0. 5原子％以上 4. 5原子％以下であり、 より好 ましい範囲は 1. 〇原子％以上 4. 0原子％以下である。\n\n【0079】上記組成を有する主相用合金には、 C rおよび Cに加えて、 0. 1原子％>以上 1 0原子％以下の C o、 N i、 および Zまたは Aし\n\nCuを添加しても良い。 特に、 C oの添加は耐腐食性を更に向上さ せるために有効である。\n\n【0080】なお、 添加した Cが希土類下元素 Rと結合すると好ましくないが, ストリップキャス卜法などの急冷法によって作製すれば、 R— C化 合物の生成を抑制できる。 具体的には、 上記組成を有する原料合金 の溶湯を 1 00°CZ秒以上 1 ΟΟΟΟΤ^Ζ秒以下の速度で急冷 ·凝 固すれば、 添加 Cは希土類元素 Rと結合しにくくなり、 Bと効率的 に置換する。\n\n【0081】なお、 主相用合金は、 組成が異なる複数の合金を含んでいてち良 し、。 例えば、 Bおよび Cの合計量 （Q含有量） が 0. 8質量 ¾»以上 1. 0質量％以下の第 1合金と、 Bおよび Cの合計量 （Q含有量） が 1. 2質量％以上 1. 4質量％以下である第 2合金とを、 主相用 合金として用いても良い。 この場合、 上記の第 1合金および第 2合 金とを混合する工程が必要になるが、 この混合は、 主相用合金の微 粉砕工程中に行ってちょいし、 粗粉砕工程中に行ってちょい。\n\n【0082】Q含有量の異なる第 1および第 2合金を混合することにより、 第 1合金から生成される R2T7相が、 第 2合金に由来する余分な (Bまたは C) と結合するため、 添加し Cが主相内にとどまりゆ すくなる。 そのため、 主相用合金の Cが粒界相に流出した場合に生 じる N d— O— C化合物の生成を抑制し、 磁気特性の低下を防ぐこ とができる。\n\n【0083】まだ、 Q含有量が相対的に多い第 2合金を第 1合金に加えること により、 Bおよび Cの組成比率が増加するため、 R2T17相が R2\n\nT14B相に変化し、 磁石特性 （保磁力） が向上する効果ち得られ る。\n\n【0084】本実施形態では、 上記の主相甩合金に加えて、 Rの含有濃度が 6 0原子％以上 8〇原子 96以下、 C oの含有濃度が 20原子％以上 4 〇原子％以下の液相甩合金を用意する。 液相用合金は、 焼結工程で 主相合金よりち早くに溶融し、 液相焼結の進行に寄与する。 液相用 合金は、 最終的には、 焼結磁石の粒界相を構成することになる。 本発明は、 C rおよび C (特に C) を主相中に濃縮する一方で、 粒界相の C濃度をできるだけ低 【0085】ま 、 本発明では、 主相と粒界相との間における自然電極電位の 差を小さくするため、 希土類元素 Rと C oを主に含有する R— C o 合金を液相用合金として用いる。 そうすることにより、 最終的な焼 結磁石の粒界相中に、 自然電極電位が 一 0. 70V以上の金属間 化合物を粒界に生成しやすくなる。 粒界相としては、 R3Coを含 むことが好ましく、 液相用合金としては、 R3Coを生成しゆすい 組成を有することが望ましい。 このため、 液相用合金に占める希土 類元素 Rの濃度は 60原子％以上 80原子％以下、 Coの濃度は 2 0原子％以上 40原子％以下に設定することが好ましい。 具体的に は、 Nd ： 60原子％ぉょび〇 0 ： 40原子％を含有する合金を甩 いることができる。\n\nP T/JP03/07231\n\n【0086】液相合金中の Rは、 液相の生成に重要な役割を果 し、 C oは希 土類元素 Rと結合して、 自然電極電位が主相に近い化合物の生成に 寄与する。 液相用合金中の C oが 2〇原子％を下回ると、 最終的な 粒界相の自然電極電位が充分に高くならず、 主相と粒界相との間に おける自然電極電位差が大きくなるため、 耐腐食性が充分に発現し な 2が生成されやすくなるので磁石特性が劣化し、 好ましくない。\n\n【0087】上記の組成の液相用合金ち、 前述し 主相用合金と同様に、 ス卜 リップキャス卜法などの急冷法によって作製することができる。\n\n【0088】なお、 液相用合金中に希土類元素や C o以外の元素 （例えば C、 B、 C 「など） が存在してい としても、 その割合が液相合金全体 の 3 0原子％以下であれば問題ない。\n\n【0089】[第 1 粉砕工程]\n\n【0090】上記の主相用合金および液相用合金のフレーク状に粗く粉砕され た錚片を複数の原料パック （例えばステンレス鋼製） に充填し、 ラ ックに搭載する。 この後、 原料パックが搭載され ラックを水素炉 の内部へ挿入する。 次に、 水素炉の蓋体を閉じ、 水素脆化処理 （以 下、 「水素粉砕処理」 と称する揚合がある） 工程を開始する。 水素 粉砕処理は、 例えば図 1 0に示す温度プロファイルに従って実行す る。 図 1 0の例では、 まず真空引き過程 I を 0. 5時間実行した後、 水素吸蔵過程 IIを 2. 5時間実行する。 水素吸蔵過程 IIでは、 炉内に 水素ガスを供給し、 炉内を水素雰囲気にする。 そのときの水素圧力\n\nP T/JP03/07231\n\n【0091】は、 2 0 0〜4 0 0 k P a程度が好ましい。\n\n【0092】続いて、 0〜3 P a程度の減圧下で脱水素過程 IIIを 5. 0時間実 行し 後、 アルゴンガスを炉内に供給しつつ、 原料合金の冶却過程 IVを 5. 〇時間実行する。\n\n【0093】冶却過程 IVにおいて炉内の雰囲気温度が比較的に高い段階 （例え ぱ、 1 〇0 °Cを超えるとき） では、 常温の不活性ガスを水素炉の内 部に供給し、 冷却する。 その後、 原料合金温度が比較的低いレベル に低下した段階 （例えば、 1 0 0 °C以下のとき） で、 常温よりも低 し、温度 （例えば室温マイナス 1 〇°C程度） に冷却し 不活性ガスを 水素炉 1 0内部に供給することが冷却効率の観点から好ましい。 ァ ルゴンガスの供給量は、 1 0〜1 0 0 N m3/ m i n程度にすれば よし、。\n\n【0094】原料合金の温度が 2 0〜2 5 °C程度にまで低下したら、 ほぽ常温 (室温よりち低いが、 室温との差が 5 °C以下の範囲の温度） の不活 性ガスを水素炉内部に送風し、 原料の温度が常温レベルに達するの を待つことが好ましい。 こラすることによって、 水素炉の蓋体を開 放した際に、 炉内部で結露が生じる事態を避けることができる。 結 露によって炉内部に水分が存在していると、 真空引き工程でその水 分が凍結 · 気化するため、 真空度を上昇させにくくなり、 真空引き 過程 I に要する時間が長くなつてしまうので好ましくない。\n\n【0095】水素粉砕後の粗粉砕合金粉末を水素炉から取り出す際、 粗粉砕粉 が大気と接触しなし、ように、 不活性雰囲気下で取り出し動作を実行 することが好ましい。 そラすれば、 粗粉砕粉が酸化 ·発熱すること\n\nが防止され、 磁石の磁気特性が向上するからである。 次に、 粗粉砕 された原料合金は複数の原料パックに充填され、 ラックに搭載され る。\n\n【0096】水素粉砕によって、 主相用合金および液相用合金は、 いずれも、 0. 1 m m〜数 m m程度の大きさに粉砕され、 その平均粒径は 5 0 0 m以下となる。 水素粉砕後、 脆化した原料合金をロータリク一 ラ等の)令却装置によって、 より細かく解砕するとちに冷却すること が好ましし、。 比較的高い温度状態のまま原料を取り出す場合は、 口 —タリクーラ等による)令却処理の時間を相対的に長くすれば良い。 水素粉砕により作製しだ粗紛砕粉の表面には、 N dが多く露出し ており、 非常に酸化されゆすい状態にある。\n\n【0097】なお、 主相用合金および液相用合金の粗粉砕粉は、 上述し よう に、 主相用合金および液相用合金に対して同時に水素脆化処理を施 すことによって作製してもよいが、 主相用合金および液相用合金を 別々に粗粉砕してちょい。\n\n【0098】[第 2粉砕工程]\n\n【0099】第 1 粉砕工程で作製された主相用合金の粗粉砕粉および液相用合 金の粗粉砕粉を混合した後、 この混合粉末に対して、 ジェットミル 粉砕装置を用いて微粉砕を実行する。 本実施形態で使用するジエツ 卜ミル粉碎装置にはサイクロン分級機が接続されている。\n\n【0100】ジエツ 卜ミル粉砕装置は、 第 1 粉砕工程で粗く粉砕された希土類 合金 （粗粉砕粉） の供給を受け、 粉砕機内で粉砕する。 粉砕機内で 粉砕された粉末はサイクロン分級機を経て回収タンクに集められる。\n\n以下、 より詳細に説明する。\n\n【0101】粉砕機内に導入された粗粉砕粉は、 内部のノズルから高速噴射さ れた不活性ガスによって粉砕機内に巻き上げられ、 粉砕機内で高速 気流とともに旋回する。 そして、 被粉砕物同士の相互衝突によって 細かく粉砕される。\n\n【0102】このよラにして微粉砕された粉末粒子は上昇気流に乗って分級口 一夕に導かれて分級ロータで分級され、 粗い粉体は再度粉砕される ことになる。 所定粒径以下に粉砕された粉体は、 サイクロン分級機 の分級機本体内に導入される。 分級機本体内では、 所定粒径以上の 相対的に大きな粉末粒子が下部に設置された回収タンクに堆積され るが、 超微粉は不活性ガス気流とともに排気パイプから外部に排出 される。\n\n【0103】本実施形態では、 ジエツ 卜ミル粉砕装置内に導入する不活性ガス 中に僅かに酸素 （2 0〇 0 0 p p m以下、 例えば 1 0〇〇 0 p p m 程度） を混入する。 これにより、 微粉砕粉の表面を適度に酸化し、 微粉砕粉が大気雰囲気と接触したときに急激な酸化 ·発熱が生じな いよ にしている。 優れて磁石特性を得るためには、 粉末中の酸素 量が重量比率で 2〇 0 0 p m以上 8 0 0 0 p p m以下の範囲内に 調節することが好ましい。\n\n【0104】粉末中の酸素量が 8〇〇0 p p mを超えて多くなりすぎると、 次 の焼結工程で、 希土類元素が酸化物の生成に消費されてしまラため、 液相生成に寄与する希土類元素の量が減少してしまい、 その結果、 焼結性が低下したり、 主相比率の減少によって磁石特性が劣化して\n\nしまうことになるので好ましくない。\n\n【0105】本実施形態では、 粉末の平均粒径 （F S S S粒度） を 1 . 5 ^ ΓΤΊ 以上 1 0 m以下、 より好ましくは 2 m以上 6 m以下 （例えば 3 u m に設定する。\n\n【0106】なお、 最終的な焼結磁石中に占める主相および粒界相の好ましい 体積比率を考慮して、 合金全体に対する液相用合金の体積比率は 2 %以上 2 0 %以下の範囲内に設定されることが好ましい。\n\n【0107】[プレス成形]\n\n【0108】本実施形態では、 上記方法で作製された混合粉末に対し、 ロッキ ングミキサー内で潤滑剤を例えば 0 . 3 w t %添加 · 混合し、 潤滑 剤で合金粉末粒子の表面を被覆する。 潤滑剤としては、 脂肪酸エス テルを石油系溶剤で希釈したちのを用いることができる。 本実施例 では、 脂肪酸エステルとしてカブロン酸メチルを用い、 石油系溶剤. としてはイソパラフィンを用いる。 カブロン酸メチルとイソバラフ インの重量比は、 例えば 1 : 9とする。 このような液体潤滑剤は、 粉末粒子の表面を被覆し、 粒子の酸化防止効果を発揮するとともに、 プレス時の配向性および粉末成形性を向上させる機能 （成形体の密 度が均一となり、 ヮレ · ヒビなどの欠陷を無くすこと） を発揮する なお、 潤滑剤の種類は上記のものに限定されるわけではない。 脂 肪酸エステルとしては、 カブロン酸メチル以外に、 例えば、 カプリ ル酸メチル、 ラウリル酸メチル、 ラウリン酸メチルなどを用いても 良い。 溶剤としては、 イソパラフィンに代表される石油系溶剤ゅナ フテン系溶剤等を用いることができる。 潤滑剤添加のタイミングは\n\n任意であり、 例えばジェットミル粉砕装置による微粉砕前、 微粉砕 中、 微粉碎後のいずれであってち良い。 液体潤滑剤に代えて、 ある いは液体潤滑剤とともに、 ステアリン酸亜鉛などの固体 （乾式） 潤 滑剤を甩いてち良い。\n\n【0109】次に、 上述の方法で作製し 磁性粉末を公知のプレス装置を用し、 て配向磁界中で成形する。 印加する配向磁界の好ましし、範囲は、 〇. 5T以上 8T以下 （例えば 1. 1 T) である。 こうして、 密度が例 えば 3. 5 g/cm3以上 5. 〇 g/ c m3以下 （例えば 4. 2 g /cm3) 程度の成形体を作製する。\n\n【0110】[焼結工程]\n\n【0111】次に、 この成形体を焼結する。 焼結は、 例えば、 アルゴン雰囲気 中において 1 080°Cで 4時間程度保持することによって行うこと ができる。 このような条件で焼結工程を行う代わりに、 650〜1 〇00°Cの範囲内の温度で 1 0〜240分間保持した後、 上記の保 持温度よりも高い温度 （例えば 1 〇00〜1 1 00°C) で焼結を更 に進めるようにしてもよい （2段階焼結） 。 温度が 650〜1 00 〇°Cのとき、 液相用合金の粉末から優先的に溶融し、 液相が生成さ れる め、 2段階の焼結工程を行えば、 焼結が効率的に進 ため、 高温処理時間を短縮でき、 焼結工程中における粒成長を抑制できる からである。\n\n【0112】このようにして得られた希土類焼結磁石 （焼結密度 ：例えば了. 60g/cm3) は、 R2T14Q型正方晶化合物の主相と、 主相を 取り囲 ¾粒界相とを有する希土類焼結磁石であって、 主相における\n\n前記 R2T1 4Q型正方晶化合物は、 F eの一部を置換し C rと、 硼素の一部を置換し 炭素とを必須元素として含有し、 かつ、 主相 の炭素濃度は、 粒界相の炭素濃度よりち高いとし、う特徴を有してし、 る。 この め、 主相の自然電極電位は、 一〇. 了 5 V以上に上昇し、 主相自体の耐腐食性が向上している。\n\n【0113】ま 、 上記希土類焼結磁石の粒界相は、 粒界相全体の 5〇原子％ 以上 9 0原子％>以下を占める C oを含有しており、 特に R3C o化 合物を含んでいる。 その結果、 粒界層の自然電極電位ち一 0. 7 5 V以上に上昇し、 かつ、 主相および粒界相の間における自然電極電 位の差が 0. 6 V以下に抑えられている。 このため、 主相と粒界相 との間で電池反 に起因する腐食が生じることち防止される。\n\n【0114】このように、 主相および粒界相の自然電極電位が、 いずれち、 一 0. 7 5 V以上であり、 かつ、 主相および粒界相の間における自然 電極電位の差が 0. 6 V以下であるため、 耐腐食性が著しく向上し、 焼結磁石の表面を保護膜で覆わなくとも、 長期の実用に耐える磁石 か実現する。 主相の自然電極電位は、 一 0. 8 2 V以上であること が好ましく、 一 0. 8 V以上であることが更に好ましい。\n\n【0115】また、 粒界相には Rと Cとが結合した化合物がほとんど生成され ず、 焼結も容易である。 このため、 焼結磁石中の結晶粒が粗大化せ ず、 ま 、 磁石特性を劣化させるような化合物の生成も抑制されて いるため、 優れた磁石特性 （例えば、 残留磁束密度 Br： 1 . 1 T 以上、 保磁力 i H c ： 9 0 0 k A Z m以上） を実現できる。\n\n【0116】なお、 以上説明してさた実施形態では、 組成の異なる 2種類の合\n\n金を用いる方法 （2合金法） で焼結磁石を作製している め、 粒界 相よりち主相に C rおよび Cを効率的に濃縮することが容易である(しかし、 本発明の焼結磁石は、 これに限定されず、 他の方法によつ ても製造される。\n\n【0117】(実施例）\n\n【0118】主相用合金として、 Nd ： 1 2. 35原子％、 F Θ ： 75. 92 原子％、 B ： 3. 20原子％、 C ： 3. 2〇原子％、 C r ： 2. 1 3原子％、 Co : 3. 20原子％の組成を有するストリップキャス 卜合金 Aを用意し、 液相用合金として、 Nd ： 60原子％、 Co ： 40原子％の組成を有するス卜りップキャスト合金 Bを用意した。 上記合金 Aおよび Bを体積比率 9 ： 1の割合で混合し、 水素脆化 によって粗粉砕した後、 ジェッ卜ミルで微粉砕し、 平均粒径 3. 0 mの微粉砕粉を作製した。\n\n【0119】次に、 この微粉碎粉を 1. 1 Tの配向磁界中で圧縮成形し、 成形 密度 4. 〇 gZcm3の成形体を作製した。 この成形体に対してァ ルゴン雰囲気中で 1 075°Cで 4時間の焼結工程を行った。 得られ た焼結体密度は 7. 55 gZ c m3であった。 主相では、 F eの一 部が C rで置換され、 硼素の一部が Cで置換され、 主相のにおける C濃度は、 粒界相の炭素濃度よりも高かった。\n\n【0120】焼結磁石の磁石特性を測定したところ、 残留磁束密度 Brは 1.\n\n【0121】3 T、 保磁力 i H cは 1 28〇 k AZmだった。 また、 温度 80°C, 相対湿度 9〇％、 時間 50〇時間以上の高温高湿実験によっても、 焼結磁石はほとんど腐食しなかった （鎬びなかった） 。\n\n産業上の利用可能性\n\n【0122】本発明によれば、 C「および Cを主相に導入することによって主 相合金の自然電極電位を上昇させるとともに、 粒界相では R— C o 化合物などの自然電極電位が主相の自然電極電位に近い化合物を形 成することにより、 焼結性と耐腐食性の両方に優れた焼結磁石を提 供することができる。 これにより、 表面保護膜を形成しなくとち鎬 びない希土類焼結磁石を得ることができる。', '【0001】澄清\n\n  【0002】稀土烧结磁体及其制造方法技术领域\n\n  稀土烧结磁体及其制造方法【0003】本发明涉及稀土烧结磁体及其制造方法。 背景技术\n\n  【0004】稀土合金的烧结磁体（永磁体）通常通过将稀土合金粉末压模，烧结所得粉末压块并进行时效处理来制造。 目前，稀土-钴磁体和稀土-铁-硼磁体两种类型广泛用于各个领域。 其中，稀土/铁/硼磁铁（以下称为“ RFe-B磁铁”。R是含有Y，Fe作为铁，B作为硼的稀土元素）。 它具有所有磁体中最高的最大磁能积，并且价格相对较低，因此被广泛用于各种电子设备中。\n\n  【0005】RF e-B系统烧结磁体主要由R2F e14B四方化合物，R富集相（例如N d）和B富集相组成。 它由阶段组成。 例如，在美国专利第4,770,23号和美国专利第4,792,368号的说明书中描述了RfB系统的烧结磁体。\n\n  【0006】为了制造成为这种磁铁的基于RFe-B的合金，常规上使用了锭磨法。 按照一般的铸锭研磨方法，原材料是稀土金属，电解铁和铁。\n\n 合金锭是通过铝合金的高频熔化并在模具中相对缓慢地冷却所得的熔融金属而制成的。\n\n  【0007】近年来，通过使熔融合金与单辊，双辊，旋转盘或旋转的圆柱形壳体的内表面等接触，已经相对较快地冷却了，并且合金熔体比铸锭薄。 背景技术以旋转唇浇铸法和离心浇铸法为代表的快速冷却方法用于生产凝固的合金（以下称为“合金薄片”）引起了人们的关注。 通过这种快速方法生产的合金片的厚度通常在约0.03mm至约10mm的范围内。 根据淬火方法，熔融合金从与冶金辊接触的表面（辊接触表面）开始固化，并且晶体从辊接触​​表面在厚度方向上生长为柱状。 结果，通过滑模浇铸法生产的合金在短轴方向上的尺寸为约0.1m以上且约100owm以下，在长轴方向上的尺寸为约5m以上。 它包含500 m以下的R2Fe14B结晶相和存在于R2Fe14B结晶相中的R（富）相。 有一个组织。 富R相是稀土元素R的浓度较高的非磁性相，其厚度（相当于晶界的宽度）为约10m以下。\n\n  【0008】淬火合金的时间相对较短（冷却速度：10∘（冷却速率：102°C /秒以上且104°CZ秒以下），具有结构精细，晶粒尺寸小的特点。 另外，晶界面积大，富R相在晶界内广泛扩散。\n\n 因此，具有富R相的分散性也优异的优点。 由于这些特性，可以通过使用淬火合金来制造具有优异的磁性能的磁体。\n\n  【0009】将通过上述方法制造的合金铸锭例如通过氢吸收法和Z型或机械研磨法（例如使用圆盘磨机）粉碎而得到的压制成型的合金粉末。 然后，例如使用减肥机通过干式粉碎法将所获得的粗粉（例如，平均粒径为10m至500m）精细地粉碎。\n\n  【0010】从磁性的观点出发，优选用于压制成型的R-Fe-B合金粉末的平均粒径在1.5m〜6m的范围内。 除非另有说明，否则粉末的“平均粒径”是指质量的1U直径（质量：“ M M D”）。\n\n  【0011】通过上述方法制造的稀土烧结磁体的耐腐蚀性差，并且具有极差的清洁性的问题。 为了提高耐腐蚀性，需要通过镀覆或蒸镀在烧结磁铁的表面形成保护膜。 由于这种保护膜形成工艺具有增加制造成本的缺点，因此强烈需要提高磁性合金本身的耐腐蚀性。\n\n  【0012】申请人发现，在主相中引入“ C”改善了稀土烧结磁体的耐腐蚀性，并在日本专利申请公开No.41868 / 1981中公开了它。 但是，如果添加足够量的Cr以提高耐腐蚀性，则磁体的剩余磁通密度Br会降低，并且\n\n 结果，最大磁能积（BH）ma x也减小。 此外，通过添加Cr不能充分提高烧结磁体中晶界的耐腐蚀性。\n\n  【0013】另一方面，提出了通过将碳（C）集中在烧结磁体的晶界相中并且以C浓度相对高的晶界相包围主相来提高耐腐蚀性。  （日本专利公开No.268051 / 1992）。 根据该技术，添加的C在晶界处结合到诸如Nd的稀土元素R上，并且存在烧结性降低的问题。\n\n  【0014】鉴于上述要点而完成了本发明，其主要目的是提供一种耐腐蚀性和烧结性优异的稀土烧结磁体及其制造方法。 在里面 发明内容\n\n  【0015】本发明的稀土烧结磁体为R2T14Q型四方化合物（R为至少一种稀土元素，T为Fe至少1） 一种稀土烧结磁体，其主相为Q型，硼和Z型或碳的过渡金属元素，并且晶界相围绕该主相，其中R2T在主相中 14Q型四方化合物含有Cr作为Fe和C的一部分，一部分硼作为碳的基本元素。 其特征在于高于相的碳浓度。\n\n  【0016】在一个优选的实施方案中，晶界相包含占整个晶界相的50原子％以上且90原子％以下的Co。\n\n 在一个优选的实施方案中，晶界相包含R3Co化合物。\n\n  【0017】在优选的实施方式中，主相中的RaTi4Q型四方化合物含有Co作为必要元素，并置换了一部分Fe。\n\n  【0018】在优选的实施方式中，R的含量浓度为12原子％以上且18原子％以下，T的含量浓度为60原子％以上»88原子≤％，Cr的含量浓度为0.1。 原子％以上且2.4原子％以下，B含量浓度为0.5原子％以上且13原子96以下，C含量浓度为0.4原子％以上且4.5原子％以下。\n\n  【0019】本发明的稀土烧结磁体为R Ti4Q型四方化合物（R为至少一种稀土元素，T为至少一种需要Fe的过渡金属）。 具有元素主相（Q为硼和/或碳）和围绕主相的晶界相的稀土烧结磁体，其中R2T14Q型正方形 结晶化合物的自然电极电位为-0.75V以上。\n\n  【0020】在优选的实施方式中，R2Tή 4Q型四方化合物的自然电极电位与晶界相的自然电极电位之差为0.6V以下。 它的特点是\n\n  【0021】R2T14Q型四方化合物（R为至少一种稀土元素，T为Fe是必需的）。 一种稀土烧结磁体的制造方法，该稀土烧结磁体的主相为一种过渡金属元素，Q为硼和/或碳，且晶界相围绕该主相。\n\n 主相合金含有50体积％以上的R z T4Q型四方化合物和Cr，硼和碳作为基本元素，R和 制备包含Co的液相合金粉末并烧结该粉末的步骤，由此进行稀土烧结，其中主相的碳浓度高于晶界相的碳浓度 在磁铁的制造工序的优选方式中，主相合金中的R的含量为11原子％以上且16原子％以下，T的含量为60原子％以上且80原子％以下，  Cr含量浓度为0.2原子％以上且2.5原子％以下，B含量浓度为1原子％以上且14原子％以下，C含量浓度为0.5原子％以上且5.0原子％以上。  ％ 或更少。\n\n  【0022】在优选的实施方式中，作为主相的合金，是含有Q为0.8质量％以上且1.0质量％以下，且1.2质量％以上且1.4质量％以下的第一合金。 使用含有Q以下的％的第二合金。 此外，优选将第一合金与第二合金的重量比设定在3∶1至1∶3的范围内。\n\n  【0023】在优选的实施方式中，液相合金中的R含量浓度为60原子％以上＞ 80原子％以下，Co含量浓度为20原子％以上40原子％以下。\n\n  在优选的实施方式中，液相用合金相对于主相用合金和液相用合金的总量之比设定为2体积％以上且20体积％以下。\n\n  【0025】在优选的实施方式中，原料合金的熔融液被用作主相合金。\n\n 该方法还包括制备步骤和使原料合金的熔体以100°o /秒以上且100°o°cz秒以下的速率通过以固化熔融合金的步骤。 附图的简要说明\n\n  【0026】图1是示出用于测量自然电极电势的装置（电位计）的配置的图。\n\n  【0027】图2是示出Nd 0.8 Fes 2.2 B 60合金的极化曲线的图。 \n\n【0028】图3显示了N d8Fe82。2—XCoxB6.0合金（X2 0，5  （10、20、50）是显示极化曲线的图。\n\n  【0029】图4显示了主相合金（Nc ^ 1.8F e82。2_xCoxB6.o是表示晶界相中可能含有的金属间化合物的自然电极电位与C o取代量之间的关系的图。 图3是示出电势与自然电极电势之间的关系的曲线图。\n\n  【0030】图6是示出其中F e被Co，N i，C r和A 1取代的主相合金中自然电极电势与取代量之间的关系的图。 该图是表示Co置换合金和Co + C置换合金中的置换量与自然电极电位之间的关系的图。\n\n  【0031】图8是表示Ni置换合金和Ni + C置换合金中的置换量与自然电极电位之间的关系的图。\n\n  【0032】图9是示出C”替代合金和C r + C替代合金中的位移尺寸与自然电极电位之间的关系的图。\n\n 图10是表示氢压碎（脆化）的过程的曲线图“○”0用于实施本发明的最佳方式本发明的稀土烧结磁体为R2。  T14Q型四方化合物的主相（R为至少一种稀土元素，T为至少一种需要Fe的过渡金属元素，Q为硼和/或碳），并且 它是一种具有围绕主相的晶界相的稀土烧结磁体，其中稀土元素被认为包含Y（铀）。\n\n  【0033】本发明的主要特征在于，主相中的R2T14Q型四方化合物由取代有F e的一部分的C r和硼（B）构成。 部分碳被取代并包含7个碳（C）作为必需元素，并且主相的C浓度高于晶界相的C浓度。\n\n  【0034】在本说明书中，“其中一部分Fe被取代的Cr”是指构成R2T14Q型四方化合物的晶体的Fe的存在。 这意味着C“与存在的位置存在于同一类型的位置，并且在特定位置上F原子实际上不必被C r原子取代。类似地，”  ``B的一部分被C取代\'\'表示R2T4C r与构成Q型四方化合物的晶体的B的位置相同。 这不一定意味着在特定环中B原子实际上被C原子取代。\n\n  【0035】根据具有这样的结构的本发明的烧结磁铁，\n\n C``将添加量（例如占总磁体的2原子％或更少）减少到不会引起明显劣化的程度，并在不因同时添加C而引起烧结性降低的情况下显着提高耐腐蚀性。 能够。\n\n  【0036】稍后将详细描述添加Cr和C并使主相中的Cr和C的浓度高于晶界相中的浓度的优选方法。  .. 在此，首先，将基于实验结果详细描述通过添加Cr和C来提高R2T1 4Q型四方化合物的耐腐蚀性的机理。  ..\n\n  【0037】[耐腐蚀性和自然电极电位]\n\n  【0038】通常，金属的腐蚀是通过存在比金属具有更高电势的杂质金属来促进的。 这是因为杂质金属成为局部力剑，并且容易发生电池反应。因此，认为增加构成稀土磁体的合金的自然电极电势对提高耐蚀性是有效的。  .. 另一方面，认为由于主相与晶界相之间的电势差，单元反应也促进了稀土烧结磁体的腐蚀。\n\n  【0039】但是，没有指南可以定量评估应添加哪种添加剂元素以及在何种程度上提高抗腐蚀性\'。 因此，本发明人通过测量极化曲线定量地评估了形成主相和晶界相的各种合金的电势，并分析了不易腐蚀（难于阻碍）的稀土烧结磁体的结构。  ..\n\n  【0040】图1可用于测量各种金属或合金的自然电极电势。\n\n 显示了可能的恒电位仪设备的示意性配置。 图1示意性地显示了将样品（样品）用作阳极电极时的电子（e-1）路径。\n\n  【0041】可以使用图1所示的装置通过电位动力学方法测量合金的自发电极电位。 具体而言，将由Pt构成的样品合金电极（SamplΘ）和参比电极（对电极）浸入溶液中，并改变两个电极之间施加的电压。 随着施加电压的升高，构成样品合金电极的部分合金被离子化，并向样品金属电极中发射电子：电子移动到对电极（由Pt组成的参比电极）。 此时，可以通过测量流过电流表的电子数作为电流密度并在图中绘制施加电压的测量值来获得极化曲线。\n\n  【0042】本说明书中的自然电极电位的测量值是在以下测量条件下获得的值。\n\n  【0043】•将样品表面积设置为1 cm2，将极化宽度设置为2。OV，将样品表面平均粗糙度设置为0.02 wm或更小，并将电压扫描速率设置为5 mVZ秒。\n\n  【0044】•H g2C12用作参考电极，Pt电极用作对电极。\n\n  【0045】-为了抑制由于溶解氧引起的阴极反应，在测量之前用氮气吹扫溶液10分钟以上以排出溶解氧。 在测量期间，在液体表面上进行氮气流动以防止氧气从大气中溶解到溶液中。\n\n  将【0046】-2.5％N a2S04（pH 6.4）用作溶液并溶解。\n\n 将液体温度设置为20°C。\n\n  【0047】图2显示了在这种测量条件下获得的偏振曲线的示例。 图2显示了N d8Fe8 2。2B6。0合金的极化曲线。 图2的曲线图中的纵轴表示恒电位仪装置中的电极间的电流密度，横轴表示样品电极的电位。 当样品电极的电势从低电平增加到高电平时，电流密度逐渐降低，极化曲线在一定电势下显示最小值c。当该电流密度最小时的电势是“自然电极”。 称为“电位（腐蚀电位）”。 当施加自然电极电位时，图1所示的电极反应处于平衡状态。\n\n  【0048】合金的自然电极电势越高，电池毛刺越难处理。 当电势升高到高于自然电极电势的水平时，电流密度再次升高。 这是因为当电势低于自然电极电势时，阴极排斥在样品电极处进行，而当电势变得高于自然电极电势时，阳极反应在样品电极处进行。\n\n  【0049】常规上，已知通过将Co添加到R-Fe-B稀土烧结磁体的原材料合金中来改善烧结磁体的耐腐蚀性。 但是，到目前为止，其原因的细节尚未阐明。\n\n  【0050】本发明人实际测量了添加Co的N d -F e -B稀土磁性右合金的极化曲线，发现添加Co增加了自然电极电势。 确认。 图3显示了N di8F e8 2。2B6.0 Nd1 1.8 F，其中合金中的部分Fe被Co代替。  θ8 2。2—x\n\n CoxB6。 显示了合金的极化曲线（x 20、5、10、20、50）。 从图3可以清楚地看到，随着Co取代（X）的增加，Nd ^。8FΘ82。2_xCoxB6  ■）.o合金的自然电极电位正在上升。 其原因在于，Fe的标准氧化还原电势为10.440V，而Co的标准氧化还原电势为10.2V，这意味着Co比Fe好。 认为这是因为难以引起电化学反应，并且阳极反应iiSi本身通过Co取代而被抑制。\n\n  【0051】当将Co添加到稀土烧结磁体的原料合金中时，Co也存在于稀土烧结磁体的晶界相中，并且Co和稀土元素R键合在晶界相中。 认为形成了上述各种金属间化合物。 如果存在于这样的晶界相中的金属间化合物的自然电极电位与形成主相的合金的自然电极电位之差大，则即使主相合金的自然电极电位高， 由于电池反应在相与晶界相之间进行，因此耐腐蚀性可能降低。\n\n  【0052】图4示出了据认为在烧结磁体的晶界相中形成的金属间化合物的自然电极电势，该烧结磁体最终通过向原材料合金中添加Co以及通过Co添加F而获得。 更换e的一部分，并制成主相合金（Nd 1 1。 显示了电极电位。 从图4可以评估形成主相的单个合金和形成晶界相的合金的腐蚀敏感性。\n\n  【0053】首先是主相合金（Nd ^。8Fe82。2—xCoxB6.o 从图4可以看出，Co取代量X为50 \n\n在小于child％的区域中，自然电极电位随着O取代量X的增加而增加。\n\n  【0054】接下来，参考图。 图5显示，如果将F e的一部分替换为Co，则ffi（N d -1 3R Θ2 2 —χ〇x Bs 0 ^ 2 ^）1(^  ）示出了在盘湿度测试（温度80℃，相对湿度90％）中重量变化与自然电极电位之间的关系。 从图5可以看出，随着自然电极电位的增加，合金的重量变化变小。 该重量变化表示合金中的腐蚀程度，重量变化越小，腐蚀越小。\n\n  【0055】从以上可以看出，随着合金的自然电极电势由于Co取代而增加，腐蚀变得不太可能进行。\n\n  【0056】接下来，再次参考图4，将检查在晶界相中形成的金属间化合物的天然电极电位与主相合金的天然电极电位之间的关系。 如图5所示，Nd金属的自然电极电势（Nd-meta〖）低至约1.40 V，而形成主相的Nd 8 F为 Θ82。2B6.0的自然电极电势相对较高，约为10.82V。 因此，主相合金为N d1^8Fe82。2B6.0，晶界相合金为Nd金属。 假设两者的自然电极之间的电势差大至约0.0V，并且可能发生由于电池篡改而引起的腐蚀。 另一方面，当向原料合金中添加约30原子％的OO时，主相合金为N d 8 FeS2。2—xCoxB6 并且，晶界相合金中含有大量的Nd3Co（天然电极电位：0.66 V），此时，主相与晶界相之间的电位差小， 两者之间的电池\n\n 由抗血栓引起的腐蚀不太可能发生。\n\n  【0057】以这种方式，当添加Co时，主相中的部分Fe被Co替代，这增加了主相的自然电极电势，并且在晶界相中，  ，可能会生成天然电极电位比Nd金属高的Nd-Co化合物。 另外，由于两者的自然电极电位之差较小，因此认为不易发生作为电池反应的腐蚀。 从以上结果可以看出，通过增加主相合金的自然电极电位并减小主相合金和晶界相合金之间的自然电极电位差，可以抑制腐蚀。  ..\n\n  【0058】基于以上考虑，本发明人通过适当地选择Co以外的添加金属元素的组合，获得了具有更高耐腐蚀性的稀土类烧结磁体。 那是成功的。 更具体地，本发明的发明人提出了使用C r，N i和Z或A 1的合金（其中FΘ被C部分取代并且C被C部分取代）的合金来形成稀土烧结磁体。 发现当构成主相时耐腐蚀性显着提高，并且完成了本发明。 在下文中，将更详细地描述这一点。 首先，将N d8Fe8 2。2—ΧΜΧΒ6作为基础合金。 制备合金（M 2 C 0，N i，C″，仍为A 1），并测量所得合金的自然电极电势，图6示出了置换量X与自然电极电势之间的关系。 从图6可以看到以下内容。\n\n  【0059】•随着更换量X的增加，自然电极电位上升。\n\n  【0060】-当置换量X恒定时，当用C r置换F e时，可获得最高的自然电极电势。\n\n •即使当F e被N i取代时，如果置换量x为5原子％或更多，也可以获得与F e被C o取代时相同的自然电极电势。\n\n  【0061】接下来，将说明通过用Fe等添加元素代替一部分Fe并用C代替一部分B来进一步提高自然电极电位。\n\n  【0062】图7至9显示了Nd ^8FΘ822合金，其中Fe分别被Co，Ni和Cr代替。  —ΧΜΧΒ6。0合金（Μ2Co，Νi，C r或A]的自然电极电势及其替代 合金Nd8F e82。2—ΧΜΧΒ6.ο— yCy 显示了金的自然电极电势（M 2 Co，Ni，Cr或A ^）。 从该图的图9可以看出，在所有情况下，用C替代B进一步增加了自然电极电势。 特别地，当添加Cr和C时，即，N d8Fe82。2—XCrXB6。  ―yCy合金的自然电极电位最高。\n\n  【0063】如上所述，当向原材料合金中添加大量的Cr时，磁体的剩余磁通密度Br减小，结果，最大磁能积（BH）ma x 有一个问题，它也减少了。 然而，通过用C代替主相合金中的B的一部分，可以在保持水平的同时提高耐蚀性并减少Cr的添加量。 然而，如上所述，如果添加的C不能有效地用于代替主相合金中的B，并且大量存在于烧结磁体的晶界相中，则使用稀土元素，C和晶界相中的杂质。 因此，由于与◯2的组合，存在烧结性降低的问题。 烧结性\n\n „\n\n  【0064】PCT / JP03 / 07231\n\n  当【0065】减少时，需要长时间在高温下进行烧结处理，使得烧结磁体的晶粒变粗大并且磁体特性劣化。 因此，仅在原料合金中添加C并不能解决现有技术的问题。 因此，在本发明中，通过在主相中而不是在晶界相中以高浓度引入C，实现了不会引起烧结性降低的结构。\n\n  【0066】（实施例）\n\n  【0067】以下将描述根据本发明的用于制造稀土烧结磁体的方法的优选实施方式。\n\n  【0068】[原材料合金]\n\n  【0069】首先，通过在氩气氛中高频熔化来熔化用于主相的原材料合金，以形成熔化的合金。 作为这样的主相合金，优选使用具有以下组成的合金。\n\n  【0070】R含量浓度为11原子％以上且16原子％以下，\n\n  【0071】T含量浓度为60原子％以上且88原子％以下，\n\n  【0072】Cr含量浓度为0.2原子％以上且2.5原子％以下，\n\n  【0073】B含量浓度为1原子％以上且14原子％以下，\n\n  【0074】C含量浓度为0.5原子％以上且5.0原子％以下。\n\n  【0075】在本实施方式中，由于Cr和C集中在主相中，所以形成了具有与N d2FΘ4B型化合物的化学计量组成接近的组成的合金。 含有C”和碳的合金用作主相的合金。\n\n  【0076】接着，将该熔融合金保持在135℃后，通过单辊法突然规定熔融合金，例如，将厚度约为0.3mm的薄片状合金制成。\n\n 一团糟。 此时的快速冷却条件例如是辊的圆周速度为约1m /秒，刮擦速度为500℃/秒，过冷为200℃。 在下一次氢破碎之前，将以此方式制备的淬火合金薄片破碎成1至10毫米大小的薄片。 因此，主相合金包含占全部体积的50％以上的R2T14Q型四方化合物，并且含有Cr，B和C作为必需元素。 可以准备。\n\n  【0077】如果主相合金中的Cr浓度（主相整体合金中的质量比）小于0.2原子％»，则没有表现出提高耐腐蚀性的效果。 另一方面，浓度优选为0.2原子％以上。另一方面，如果Cr的浓度超过2.5原子％，则烧结磁铁的剩余磁通密度Br降低，  Cr浓度优选为2.5原子％以下，因此，Cr浓度的优选范围为0.2原子％以上且2.5原子％以下，进一步优选为0.3原子％。 高于2.0at％或更低。\n\n  【0078】当C浓度（主相合金整体的质量比）小于0.5质量％时，没有表现出提高耐腐蚀性的效果，因此C浓度为0.5原子。  ％>或更高是优选的。 另一方面，当C浓度超过4.5摩尔％时，烧结磁铁的剩余磁通密度Br降低，因此C浓度优选为4.5at％以下。 因此，C浓度的优选范围为0.5原子％以上且4.5原子％以下，更优选范围为1.0原子％以上且4.0原子％以下。\n\n  【0079】除具有Cr和C外，具有上述组成的主相合金还应含有0.1原子％以上且10原子％以下的Co，Ni和Z或A。\n\n 可以添加Cu。 特别地，添加Co可有效地进一步提高耐腐蚀性。\n\n  【0080】尽管不优选将添加的C键合至稀土元素R，但是如果通过淬火法例如带铸法制备RC化合物，则可以抑制RC化合物的形成。 具体地，如果具有上述组成的原料合金的熔体以100℃以上或更高且100℃下≤seconds秒以下的速度快速冷却并固化，则所添加的C不太可能与稀土元素R和B键合。 有效更换。 \n\n【0081】主相合金可以包含具有不同组成的多种合金。 例如，B和C的总量（Q含量）为0.8质量％以上且1.0质量％以下，B和C的总量（Q含量）为1.2质量％。 上述1.4质量％以下的第二合金可以用作主相的合金。 在这种情况下，需要混合上述第一合金和第二合金的步骤，但是该混合应该在用于主相的合金的精细研磨步骤期间，然后在粗研磨步骤期间进行。 崔\n\n  【0082】通过混合具有不同Q含量的第一和第二合金，由第一合金产生的R2T7相过量（ 当它与B或C键合时，添加的C倾向于停留在主相中。 因此，可以抑制在主相合金的C流出到晶界相时产生的Nd-OC化合物的产生，并且可以防止磁特性的劣化。\n\n  【0083】由于通过向第一合金中添加Q含量相对较高的第二合金来增加B和C的组成比，因此R2T17相为 2\n\n T14转变为B相，可获得改善磁体特性（矫顽力）的效果。\n\n  【0084】在本实施方式中，除了上述主相寿司合金以外，R含量浓度为60原子％以上且80原子96以下，并且Co含量浓度为20原子％以上且40原子％以下。 准备液相苛性合金。 液相合金在烧结过程中比主相合金熔化得更早，并且有助于液相烧结的进行。 液相合金最终将形成烧结磁体的晶界相。 本发明的特征在于，将C r和C（特别是C）集中在主相中，同时将晶界相中的C浓度抑制得尽可能低。 这是因为，如果晶界相中的C浓度增加，则烧结性降低。 因此，作为液相合金，优选使用不故意添加C的合金。\n\n  【0085】另外，在本发明中，为了减小主相与晶界相之间的自然电极电位的差异，将主要含有稀土元素R和Co的R-Co合金用作液相。 用作合金。 这样，在最终烧结磁体的晶界相中的晶界处容易产生自然电极电位为0.70V以上的金属间化合物。 晶界相优选包含R3Co，并且液相合金优选具有产生R3Co的组成。 因此，优选液相合金中的稀土元素R的浓度为60原子％以上且80原子％以下，Co的浓度为20原子％以上且40原子％以下。 具体地，可以使用包含Nd：60原子％和0：40原子％的合金。\n\n PT / JP03 / 07231\n\n  【0086】液相合金中的R在液相的形成中起重要作用，并且Co与稀土元素R结合并有助于形成其自然电极电势接近主相的化合物。 去做。 如果液相合金中的Co小于20原子％，则晶界相的最终自然电极电势不会足够高，并且主相和晶界相之间的自然电极电势差将大。 因此，不能充分表现出耐腐蚀性。 另一方面，如果液相合金中的Co超过40原子％并且变得太大，则在最终获得的烧结磁体的晶界相中可能产生铁磁RCO2。 因此，磁体特性劣化，这不是优选的。\n\n  【0087】具有上述组成的液相用合金中，与上述主相用合金相同，可以通过滑唇浇铸法等淬火法来制造。\n\n  【0088】即使液相合金中存在稀土元素或Co以外的其他元素（例如，C，B，C”等），它们的比例也占液相合金整体的30原子％以下。 如果是这样，没问题。\n\n  【0089】[第一次研磨过程]\n\n  【0090】在多个原料包（例如，由不锈钢制成）中填充有上述的主相合金和液相合金的薄片，将其粗粉碎成薄片，然后安装在架子上。 此后，装入原料包，并将架子插入氢气炉中。 接下来，关闭氢炉的盖，开始氢脆化处理（以下称为“氢粉碎处理”）步骤。 氢粉碎处理例如根据图10所示的温度曲线进行。 在图10的示例中，首先进行抽真空过程I 0.5小时，然后进行储氢过程II 2.5小时。 在氢存储过程II中，将氢气供应到炉中以在炉内部产生氢气氛。 当时的氢气压力\n\n PT / JP03 / 07231\n\n  【0091】优选为约200至400kPa。\n\n  【0092】然后，在将氩气供给到炉中的同时，在约0至3Pa的减压下进行脱氢步骤III5.0小时后，进行金属合金的分解步骤IV。  〇运行一个小时。\n\n  【0093】在处置方法IV中，在炉中大气温度相对较高的阶段（例如，当温度超过100℃时），将室温下的惰性气体供给至氢炉内部。 冷却。 之后，当原料合金的温度下降到较低水平（例如，低于100℃）时，将其冷却至室温以下，并冷却至一定温度（例如，室温减去-10℃）并变得不活泼。 从冷却效率的观点出发，优选向氢气炉10内供给气体。 供应的氩气量应约为10到100 N m3/ m in。\n\n  【0094】当原材料合金的温度下降到大约20到25°C时，它在大约常温下变得不活泼（温度低于室温，但与室温的差为5°C或更小） 最好将气体吹入氢气炉中，等到原料温度达到室温为止。 通过摩擦，可以避免在打开氢炉的盖子时在炉内发生结露的情况。 如果由于冷凝而在炉内出现水分，则在真空处理过程中水分会冻结并蒸发，从而难以提高真空度并增加真空处理I所需的时间。 缺席。\n\n  【0095】从氢炉中取出氢粉碎后的粗粉碎合金粉时，优选在惰性气氛下进行取出操作，以使粗粉碎粉不与大气接触。 然后，粗粉碎的粉末将氧化并产生热量。\n\n 防止了磁体的磁特性，并且改善了磁体的磁特性。 接下来，将粗粉碎的原料合金填充到多个原料袋中并安装在架子上。\n\n  【0096】通过氢粉碎将主相合金和液相合金均粉碎至约0.1mm至几mm的尺寸，并且平均粒径变为500m或更小。 在用氢破碎之后，优选将脆化的原材料合金通过焚烧炉（例如旋转破碎机）进行精细破碎，然后冷却。 当以相对较高的温度状态取出原材料时，处置过程（通过口腔冷却器等）的时间应相对较长。 大量的N d暴露在通过氢粉碎产生的粗粉碎粉末的表面上，并且处于非常氧化和漂洗的状态。\n\n  【0097】通过如上所述对主相合金和液相合金同时进行氢脆化处理，制备了主相合金和液相合金的粗粉。 或者，可以将主相合金和液相合金分别粉碎。\n\n  【0098】[第二次破碎过程]\n\n  【0099】将在第一粉碎步骤中制备的用于主相的合金的粗粉碎粉和用于液相的合金的粗粉碎粉混合之后，使用喷射式粉碎机将混合的粉末细粉碎。 进行粉碎。 旋风分级机连接到在该实施例中使用的喷射磨机和粉末磨机。\n\n  【0100】喷射式粉碎机破碎机接收在第一破碎步骤中粗粉碎的稀土合金（粗粉碎粉末），并在破碎机中对其进行破碎。 在破碎机中破碎的粉末通过旋风分级机收集在回收罐中。\n\n 细节将在下面描述。\n\n  【0101】引入到破碎机中的粗粉碎粉末被从内部喷嘴高速注入的惰性气体卷入破碎机，并随着破碎机中的高速气流而回旋。 然后，要破碎的物体通过相互碰撞而被精细地破碎。\n\n  【0102】以这种方式细粉碎的粉末颗粒在上升的气流上骑行，通向分级口过夜，并由分级转子分级，从而将粗粉再次粉碎。 将粉碎成预定粒度或更小的粉末引入旋风分级器的分级器主体中。 在分级机主体内部，尺寸等于或大于预定尺寸的相对较大的粉末颗粒沉积在安装在底部的回收罐中，但是超细粉末与惰性气体流一起从排气管排出到外部。\n\n  【0103】在本实施方式中，将少量的氧气（20000pmppm以下，例如100000ppm）稍微混入引入喷射式粉碎机的惰性气体中。 结果，细粉的表面被适当地氧化，并且当细粉与空气接触时，不会发生突然的氧化和发热。 为了获得优异的磁体特性，优选将粉末中的氧的量调节在2,000ppm以上且800ppm以下的范围内。\n\n  【0104】如果粉末中的氧气含量太高，超过800 ppm，则稀土元素将被消耗，以在下一个烧结步骤中形成氧化物，这将有助于液相形成。 结果，稀土元素的产生量减少，由于主相比的降低，导致烧结性降低和磁体特性劣化。\n\n 这是不理想的，因为它将最终结束。\n\n  【0105】在本实施方式中，将粉末的平均粒径（FSSSS粒径）设定为大于等于1.5μm且小于等于10m，更优选大于等于2m且小于等于6m（例如3μm）。\n\n  【0106】考虑到最终烧结磁体中主相和晶界相的优选体积比，液相合金相对于整个合金的体积比在2％至20％的范围内。 优选设置在其中。\n\n  【0107】[冲压成型] \n\n【0108】在本实施方式中，例如，在摇动混合机中将0.3重量％的润滑剂添加到通过上述方法制造的混合粉末中并进行混合，并且合金粉末颗粒的表面被润滑剂覆盖。  .. 作为润滑剂，可以使用用石油溶剂稀释的脂肪酸酯。 在该实施例中，将硼酸甲酯用作脂肪酸酯，并将异链烷烃用作石油溶剂。 硼酸甲酯与异巴巴拉芬的重量比为例如1：9。 这种液体润滑剂覆盖粉末颗粒的表面，在颗粒上发挥抗氧化作用，并且还具有改善压制期间的取向和粉末可成型性的功能（成型体的密度均匀，并且 表现出诸如裂纹之类的缺陷。）润滑剂的类型不限于上面列出的那些。 作为脂肪酸酯，除了己酸甲酯以外，例如，可以使用辛酸甲酯，月桂酸甲酯，月桂酸甲酯等。 作为溶剂，可以使用石油溶剂如异链烷烃和环烷溶剂。 何时添加润滑剂\n\n 它是任选的，并且可以是例如在通过气流粉碎机进行细粉碎之前，在细粉碎期间或在细粉碎之后。 代替液体润滑剂，或者与液体润滑剂一起，可以添加固体（干式）润滑剂，例如硬脂酸锌。\n\n  【0109】接下来，使用已知的加压装置在定向磁场中模制通过上述方法制造的磁粉。 所施加的取向磁场的优选范围为0.5T以上且8T以下（例如1.1T）。 由此，制成密度例如为3.5g / cm3以上且5.0g / cm3以下（例如4.2g / cm3）以下的成型体。\n\n  【0110】[烧结过程]\n\n  【0111】接下来，对该成型体进行烧结。 烧结例如可以通过在氩气氛中在1080℃下保持约4小时来进行。 代替在这些条件下执行烧结过程，在650至100°C的温度下保持10至240分钟后，温度要高于上述保持温度（例如10000至100°C）。 可以在1100℃下进一步进行烧结（两步烧结）。 当温度为650至100°C时，液相合金的粉末会优先熔化并生成液相，因此，如果执行两步烧结工艺，烧结将高效进行。 因此，可以缩短高温处理时间，并且可以抑制烧结过程中的晶粒生长。\n\n  【0112】由此获得的稀土烧结磁体（烧结密度：例如60g / cm3）由R2T14Q型四方化合物组成。 具有围绕主相的相和晶界相的稀土烧结磁体，其中\n\n R2T1 4Q型四方化合物通过置换一部分Fe和碳，一部分硼作为必要元素而含有C r和主相。 的碳浓度高于晶界相的碳浓度。 因此，主相的自然电极电位上升至10V以上，并且主相本身的耐腐蚀性提高。\n\n  【0113】此外，上述稀土烧结磁体的晶界相包含Co，Co占整个晶界相的50原子％以上且90原子％以上，特别是R3C  o包含化合物。 结果，晶界层的自然电极电势升高到0.75V以上，并且主相和晶界相之间的自然电极电势差被抑制在0.6V以下。  .. 因此，防止了在主相和晶界相之间由电池反应引起的腐蚀。\n\n  【0114】如上所述，主相和晶界相的固有电极电位分别为0.75V以上，主相和晶界相的固有电极电位之差为0.05V。 由于小于0.6V，因此耐腐蚀性显着提高，并且可以实现在不用保护膜覆盖烧结磁体的表面的情况下可长时间实用的磁体。 主相的自然电极电势优选为至少0.82V，更优选为至少0.8V。\n\n  【0115】此外，在晶界相中几乎没有形成R和C键合的化合物，并且容易烧结。 因此，烧结磁体中的晶粒不会变粗，并且还抑制了劣化磁体特性的化合物的产生，从而导致优异的磁体特性（例如，剩余磁通密度Br）。  ：1.1T以上，可以实现矫顽力i H c：900k AZ m以上。\n\n  【0116】在上述实施例中，使用了具有不同组成的两种类型的组成。\n\n 由于通过使用金的方法（二合金法）生产烧结磁体，因此容易有效地将Cr和C从晶界相集中到主相(。 本发明的烧结磁体不限于此，并且可以通过其他方法制造。\n\n  【0117】（示例）\n\n  【0118】Nd：12.35 at％，FΘ：75.92 at％，B：3.20 at％，C：3.20 at％，Cr：2。 准备组成为13at％且Co：3.20at％的带钢铸造合金A，作为液相合金，准备组成为Nd：60at％，Co：40at％的滑铸。 制备合金B。 将合金A和合金B以9：1的体积比混合，通过氢脆将其粗粉碎，然后通过喷射式粉碎机进行细粉碎，以制备平均粒径为3.0m的细粉碎粉末。\n\n  【0119】接着，在1.1T的取向磁场中将大豆微粉压制成型，以制备成型密度为4.0gZcm的成型体3。 在氩气气氛中，将该成形体在1075℃下进行4小时的烧结处理。 所得烧结体的密度为7.55gZ·cm3。 在主相中，一部分Fe被Cr置换，一部分硼被C置换，主相中的C浓度高于晶界相中的C浓度。\n\n  【0120】测定烧结磁铁的磁特性时，剩磁通密度Br为1。\n\n  【0121】3 T，矫顽力i H c为1280 k AZm。 另外，即使在80℃，相对湿度为90％，时间为500小时以上的高温高湿实验中，烧结磁铁也不会腐蚀（没有阻碍）。\n\n 工业可用性\n\n  【0122】根据本发明，通过将C”和C引入主相，增加了主相合金的天然电极电势，并且在晶界相中，主要存在R-Co化合物的天然电极电势。 通过形成接近该相的自然电极电位的化合物，可以提供兼具优异的烧结性和耐腐蚀性的烧结磁铁。 可以获得稳定的稀土类烧结磁体。');
INSERT INTO `os_patent_instruction_text` VALUES (12992, 22821, '【0001】\n\n【発明の属する技術分野】\n\n本発明は、極異方性リング磁石を磁場中成形する装置に関し、特にモータに組み込まれた時にコギングトルクを実質的に発生させない極異方性希土類焼結リング磁石を磁場中成形する装置に関する。\n\n【0002】\n\n【従来の技術】\n\n永久磁石同期モータの回転子等に用いられる磁石として、図15(a) 及び(b) に示すようにラジアル異方性磁石と極異方性磁石が知られている。いずれの磁石もモータに組み込まれた時にコギングトルクが生じる。コギングトルクは、磁極の矩形性と磁極間の吸引力の強さに依存する。コギングトルクが大きくなると、モータ回転時に振動や騒音が大きくなるので、その低減が望まれている。コギングトルクの低減策として、(a) 固定子の歯先形状を工夫する、(b) 磁石の着磁波形を正弦波に近づける、(c) 固定子と回転子双方の磁極数を最適化する、(d) 回転軸方向に平均化するために回転子のスキュー又はスキュー着磁を行う、(e) 磁極間のギャップを広げる等の様々な試みが行われている。\n\n【0003】\n\nこれらのうち、磁石の着磁波形を正弦波に近づける(b) の手段は、出力をロスすることなくコギングトルクを低減することができる。極異方性リング磁石は、隣接する磁極間の磁束が磁石中を円弧状に流れるため、表面磁束密度分布が正弦波に近い形状であり、矩形波的な表面磁束密度分布を有するラジアル異方性磁石より有利である。また極異方性リング磁石はラジアル異方性リング磁石に比べ表面磁束密度を1.5倍程度に高くすることができるので、ラジアル異方性磁石より高い出力が得られる。\n\n【0004】\n\nこのような極異方性リング磁石の成形装置の例として、例えば特開2000-269062号は、表面多極異方性リング磁石を焼結法により製造する際に磁場中成形工程において用いる成形装置であって、筒状の非磁性型枠と柱状のコアロッドとによりリング状の成形空間が構成されており、製造する磁石の極数をnとしたとき、型枠内にn個の溝が設けられ、各溝内に磁界印加用のコイルが埋め込まれており、型枠内の隣接する溝間にn個の高透磁率材が埋設されている成形装置を開示している。しかしながらこの成形装置を用いても、十分に正弦波に近い表面磁束密度分布を有する極異方性リング磁石を得ることはできなかった。\n\n【0005】\n\n極異方性リング磁石の表面磁束密度分布を正弦波に近づけるために、すなわち所望の正弦波整合率にするために、磁場中成形において磁粉を適切に配向させることが必要である。しかしながら特開2000-269062号には、磁粉の配向方向をどのようにすれば表面磁束密度が正弦波に近づくかが全く記載されていない。焼結による変形等の要因も加わり、量産品における表面磁束密度分布の正弦波整合率は85〜90%程度である。\n\n【0006】\n\n【特許文献1】\n\n特開2000-269062号\n\n【0007】\n\n【発明が解決しようとする課題】\n\n従って本発明は、表面磁束密度分布の正弦波整合率が安定して高く、モータに組み込まれた時にコギングトルクを実質的に発生させない極異方性リング磁石の製造に用いる磁場中成形装置を提供することである。\n\n【0008】\n\n【課題を解決するための手段】\n\n正弦波整合率が高い表面磁束密度分布を有する極異方性リング磁石を製造するためには、磁場中成形における磁粉の配向方向を最適化する必要がある。磁粉の配向方向の最適化には、例えば特開2000-269062号に教示されているように、磁界印加用コイルや型枠の設計を工夫することが行われているが、いかなる基準で最適化すべきか分かっておらず、設計を試行錯誤で行っているのが実情であった。\n\n【0009】\n\n最近ではモータの設計に電磁界解析技術が広く利用されており、なかでも有限要素法(FEM)は、解析対象をメッシュモデルにして各メッシュを数値化することにより偏微分方程式等を使用せずに現実的な解を得ることができるので有用である。しかしながら、リング磁石の磁化方向の設計(すなわち、最適な磁化方向を発生させるための磁粉の配向方向の設計)をFEMにより行う場合、セグメント磁石やラジアル配向のリング磁石では比較的簡単であるが、極異方性リング磁石では明確な基準が分からなかった。\n\n【0010】\n\n例えば図15(b)に示す極異方性リング磁石において、磁極の内側の位置7や、外周上で隣接する磁極の中間位置8ではどのような磁粉の配向が好ましいか全く不明であった。つまり、極異方性リング磁石内において、S極からN極又はN極からS極へ磁粉がどのように変化するのが望ましいのか不明であった。\n\n【0011】\n\nこのような状況において鋭意研究の結果、本発明者等は、リング磁石成形空間内におけるコイル磁場分布の解析を行ったところ、図3に示すように、磁極位置とそれに隣接する位置との間で磁化方向が等角度ピッチ毎に一定の角度で変化する場合、換言すれば任意の一本の法線上では磁化方向が径方向位置に係わらず同じである場合、表面磁束密度分布が正弦波になることを発見した。本発明はかかる発見に基づき完成したものである。\n\n【0012】\n\nすなわち、本発明の磁場中成形装置による極異方性リング磁石は、磁化方向が磁極位置では法線方向で、隣接する磁極の中間位置では接線方向であるとともに、前記磁極位置とそれに隣接する前記中間位置との間を等角度ピッチの要素に分割した時、隣接する要素の磁化方向がほぼ一定の角度差を有することを特徴とする。\n\n【0013】\n\n前記要素における実際の磁化方向の理論的磁化方向からの角度ズレは前記磁極間の中心角の6%以内であるのが好ましい。\n\n【0014】\n\n極異方性リング磁石の任意の一本の法線上においては、径方向にわたって磁化方向がほぼ一定であるのが好ましい。\n\n【0015】\n\n極異方性リング磁石の外径Doは、内径Di及び磁極数Pに対して、\n\n式:Di>Do (P-1.5π) / Pにより表される条件を満足するのが好ましい。\n\n【0016】\n\n周方向の表面磁束密度分布の実測波形は同じ周期及びピーク値の正弦波形に対して93%以上の整合率を有するのが好ましい。\n\n【0017】\n\n本発明の磁場中成形装置による極異方性リング磁石の製造方法は、磁粉をリング状キャビティに充填して磁場中成形する際に、(a)前記磁粉の配向方向が磁極位置では法線方向に、かつ隣接する磁極の中間位置では接線方向になるように、かつ(b)前記磁極位置とそれに隣接する前記中間位置との間を等角度ピッチの要素に分割した時、隣接する要素の配向方向がほぼ一定の角度差を有するように、前記磁場を印加することを特徴とする。\n\n【0018】\n\n上記極異方性リング磁石を製造するのに用いる本発明の磁場中成形装置は、断面円形状の空隙を有する成形型と、リング状のキャビティを形成するために前記成形型の断面円形状の空隙の中心に配置した円柱状のコアロッドと、前記成形型の内面に開口する複数の空隙部と、各空隙部内に配置された複数のコイルとを有し、前記キャビティに沿って複数のコイルが配列しており、各空隙部内で前記キャビティに沿った複数のコイルがなす中心角θ1と、隣接する空隙部内のコイルがなす中心角θ2との比が0.8〜1.2であることを特徴とする。この空隙部は前記キャビティに面する側が拡大していることが好ましい。\n\n【0019】\n\n図3に部分的に示す極異方性リング磁石の例では、(a) 扇形の破線U内の矢印で示すように、磁化方向が磁極位置では法線方向(N極とS極とで磁化方向は正反対)、隣接する磁極の中間位置では接線方向であるとともに、(b) 扇形の破線V2内の矢印で示すように、磁極位置と中間位置との間の領域を等角度ピッチの要素に分割した時、隣接する要素の磁化方向がほぼ一定の角度差を有することを特徴とする。各要素における実際の磁化方向の理論的磁化方向からのズレは、磁極間の中心角の6%以内であるのが望ましい。\n\n【0020】\n\n「理論的磁化方向」は、図3を参照して、以下の通り定義される。図3は、8極の極異方性リング磁石において、S極の磁極位置5から中間位置6へ到る領域17(22.5°)を5等分した例を示す。S極5に続く破線U内の各要素P1, P2, P3, P4(領域17を5等分するラインにより表す)では、S極の磁化方向を基準にして一定の角度差で順次磁化方向が変化している。これにより、S極5から中間位置6まで比例的に磁化方向が変化する。すなわち、S極5における法線方向と中間位置6における接線方向の間の角度(本例の場合-67.5°)を要素の数(5)で割った角度(13.5°)だけ、磁化方向(配向方向)は順次変化する。図3に示す例では、N極での磁化方向W0が0°で、磁極間の要素数が10であるので、理論的には、N極の隣の要素の磁化方向W1は-13.5°であり、その隣の要素の磁化方向W2は-27.0°である。\n\n【0021】\n\n実際の磁化方向と理論的磁化方向との間にズレがないのが理想である。例えば8極の極異方性リング磁石では隣接する磁極間の中心角は45°であるので、理論的磁化方向に対して許容される実際の磁化方向の角度ズレは45°×0.06 = 2.7°である。つまり、実際の磁化方向W1は-13.5°±2.7°の範囲内であれば良く、また実際の磁化方向W2は-27.0°±2.7°の範囲内であれば良い。この条件を満たすと、表面磁束密度分布の正弦波整合率は93%以上となる。\n\n【0022】\n\nさらに本発明の磁場中成形装置による極異方性リング磁石は、図3の破線V1,V2中に示すように、任意の一本の法線上では配向方向がほぼ一定である(径方向に変化しない)という特徴を有する。言いかえれば、図15(b)の磁極11aから磁極11bまでの磁束線は同じ曲率の円弧で表すことができるので、実質的には一本の曲線9だけで表しても良い。これに対して、図16に点線で示すような曲率が異なる複数の磁束線が存在する極異方性リング磁石では、表面磁束密度分布の正弦波整合率は低い。つまり、隣接する磁極間では同じ曲率の円弧に沿って配向していないと、高い正弦波整合率が得られない。\n\n【0023】\n\n薄肉の極異方性リング磁石であってもこの条件は変わらない。例えば隣接する磁極を連結する磁気回路が図5(b)に示すように磁極間の中心位置10を含む領域で途切れていても(磁束線がリング磁石の内周面より突出していても)、正弦波整合率が優れた極異方性リング磁石が得られることが分かった。\n\n【0024】\n\n磁束線を表す曲線と隣接する磁極の中間位置10との交点は、図5(a)に示すようにリング磁石の内周面と接するか、又は図5(b)に示すようにリング磁石の内周面より内側に突出するのが好ましい。図5(a)において破線で示す内周面を有するように極異方性リング磁石を厚肉化しても磁気特性の向上がほとんど得られず、単にリング磁石の重量の増大及びコスト高に繋がるだけである。\n\nこれから、破線で示す内周面を有する極異方性リング磁石は必要以上の肉厚Wdを有することが分かる。極異方性リング磁石の内径Diは、外径Do及び磁極数Pから、Di>Do (P-1.5π) / Pの式により設計可能である。\n\n【0025】\n\nこの規定理由を図4を用いて説明する。解析の結果、磁石の肉厚と磁極幅の比がある値を超えると、表面磁束密度の飽和率(飽和磁束密度を100%としたときの相対値)がほぼ一定となることが分かった。図4において、横軸は半極幅(磁極から隣接する中間位置まで\n\nの外周長さ)に対するリング磁石の径方向肉厚の比(%)を示し、縦軸は外径Doを一定とし、内径Diを変化させた時の表面磁束密度の飽和率[最大値に対する比率(%)]を示す。リング磁石の肉厚は(外径Do-内径Di)÷2であり、半極幅は外径Do×π÷磁極数P÷2である。半極幅に対するリング磁石の肉厚が150%以上になると、磁束密度が飽和することが分かる。ピーク磁束密度は、外径及び磁極数によらずほぼ150%で飽和する。従って、極異方性リング磁石をそれより厚肉化しても、内径側に駄肉部ができるだけで、磁気特性の向上は得られない。これから、横軸の150%を閾値として、1.5>(リング磁石の肉厚/半極幅)を整理し、式(1) を得る。\n\n【0026】\n\n法線方向では配向方向が径方向に変わらないから、外径/内径比の大きな極異方性リング磁石を製造した後で、内周面を切削加工して薄肉の極異方性リング磁石としても、正弦波整合率は変わらない。Di>Do (P-1.5π) / Pを満たすように薄肉化すれば、軽量で高速を要求するディスク型モータのような用途に特に好適な極異方性リング磁石が得られる。\n\n【0027】\n\n本発明では配向方向を磁気カー効果を利用した振動試料磁力計を用いて測定したが、X線回折、カー効果等による磁区構造観察、反射電子線回折、ラザフォードバックスキャッタリング等の手法によっても配向方向を測定することができる。\n\n【0028】\n\n本発明の磁場中成形装置による極異方性リング磁石が得られる組成としては、NdFeB等のR2T14B系磁石(Rは希土類元素、Tは遷移元素)、SmCo等のRCo5系やR2Co17系磁石、SmFeN等のR2T17N系及びRT12N系磁石、特にR2T14B系焼結磁石が挙げられるが、他の組成の磁石でも良い。\n\n【0029】\n\n【発明の実施の形態】\n\n図2は極異方性希土類焼結リング磁石の製造工程を概要的に示す。焼結磁石の着磁パターンは一般に、磁粉を配向して成形する磁場中成形工程1、焼結工程2、加工工程3及び着磁工程4によって決定されるが、極異方性リング磁石では着磁工程4で磁粉の配向を矯正することは困難であるので、磁場中成形工程1における磁粉の配向は極めて重要である。\n\n【0030】\n\n磁粉として例えばNd2Fe14B系磁粉を使用することができる。なお、NdにDy等他の希土類元素を添加しても良く、FeにCoを添加しても良く、BにB以外の半金属元素を添加しても良い。磁粉の粒度分布は3〜10 μm程度に調整するのが好ましい。\n\n【0031】\n\n図1は、8極の極異方性リング磁石のS極からN極までの領域において、表面磁束密度分布を正弦波に一致させるための磁化方向を示す。磁化容易方向(配向方向)は、S極及びN極の磁極位置5では向きは異なるが半径方向(法線方向)であり、S極とN極の中間の位置(磁極中間位置)6では、法線方向と直交する方向(接線方向)である。これらの位置5, 6における磁化方向の設定は容易であるが、それらの間の領域17,17における磁化方向をいかに設定するかが重要である。本発明者等による解析の結果、領域17,17における磁化方向については、磁極5,6間を等角度ピッチに分割し、各分割要素における磁化方向を順次等角度づつ増加又は減少させれば良いことが分かった。\n\n【0032】\n\n表面磁束密度分布の正弦波整合率を93%以上とするには、実際の磁化方向と理論的磁化方向との角度ズレが磁極間の中心角の6%以内とするのが好ましい。角度ズレを3%以内、さらには2%以内とすると、98%以上の正弦波整合率が達成できる。なお表面磁束密度分布の正弦波整合率は、図8に示すように表面磁束密度分布の実側波形と周期及びピーク値が同じ正弦波との比較から求める。具体的には、実測波形の半波面積Saと正弦波の半波面積Sbとの差の絶対値|Sa-Sb|を正弦波の半波面積Sbで割った商Aを求め、(1-A)×100を正弦波整合率とする。\n\n【0033】\n\n径方向については、図3の破線V1, V2で示すように、半径方向位置に依らずほぼ同じであるのが好ましい。径方向の実際の磁化方向は、理論磁化方向に対し角度ズレがないことが理想であるが、93%以上の正弦波整合率を得るためには±2.5°まで許容でき、好ましくは±1°以内、さらに±0.5°以内とすると正弦波整合率95%以上が実現できる。\n\n【0034】\n\n図7は実施例1の極異方性リング磁石の表面磁束密度分布の計算値と実測値との関係を示す。図7の結果から、両者がよく合致していることが分かる。図9は実際の極異方性リング磁石の全周における表面磁束密度分布の測定結果を示す。なお、磁化方向は法線方向では半径方向位置に関係なく同じであるとしてよいため、解析に当っては磁界はリング磁石の肉厚の中央に作用すると仮定できる。\n\n【0035】\n\n本発明の要件を満たす磁化方向、すなわち配向方向を有する極異方性リング磁石を製造するためには、磁場中成形型の構造が重要であることが分かった。これは、図17(a) 〜(c) に示す磁場中成形型の比較から明らかとなる。\n\n【0036】\n\n図17(a) に示す構造の磁場中成形型は従来から使用されているもので、断面円形状の空隙を有する磁性体からなる成形型21と、成形型21の断面円形状の空隙の中心に配置された円柱状のコアロッド22とを有し、成形型21はその内面に開口する複数のスリット状空隙部23と、空隙部23を覆うように内面に設けられた非磁性スリーブ24とを有する。各空隙部23には複数のコイル25が配置されている。各コイル25は図示の極性を発生するように直列に連結されている。各空隙部23内のコイル25がなす中心角θ1に対して、隣接する空隙部23内のコイル25がなす中心角θ2は十分に大きい。このような場合、各空隙部23内のコイル25が発生する磁場はほぼ同心円状であるが、隣接する逆極性の磁場の重なりが少ないので、成形型21のキャビティ26内の磁化方向は、本発明の要件を満たさない。一般に図17(a) に示す磁場中成形型で得られる極異方性リング磁石の表面磁束密度分布の正弦波整合率は約85〜90%程度である。\n\n【0037】\n\n図17(b)に示す構造の本発明に係る磁場中成形型は、極異方性リング磁石を得るのに好適である。この磁場中成形型の特徴は、各空隙部23のうちキャビティ26に面する側が拡大していて、キャビティ26の表面に沿って複数のコイル25が配列するようになっており、各空隙部23の内面側に配置された複数のコイル25がなす中心角θ1と、隣接する空隙部23内のコイル25がなす中心角θ2とが実質的に等しいことである。磁場解析の結果、θ1≒θ2の場合、各空隙部23内の複数のコイル25が発生するほぼ同心円状の磁場は、隣接する空隙部23内の複数のコイル25が発生する逆極性のほぼ同心円状の磁場と重なって、交互にN極、S極を形成するとともに、磁極間の磁化方向はほぼ円形になる。すなわち、磁極位置とそれに隣接する中間位置との間を等角度ピッチの要素に分割した時、隣接する要素の磁化方向がほぼ一定の角度差を有する。このような磁化方向を有する極異方性リング磁石の場合、表面磁束密度分布の正弦波整合率は非常に高い。\n\n【0038】\n\n各要素における実際の磁化方向の理論的磁化方向からの角度ズレが磁極間の中心角の6%以内であるためには(正弦波整合率を93%以上とするためには)、中心角θ1/中心角θ2の比を0.8〜1.2とするのが好ましい。中心角θ1/中心角θ2の比の好ましい範囲は0.9〜1.1であり、より好ましい範囲は0.95〜1.05である。\n\n【0039】\n\n特に需要の多い磁極数8極〜16極の極異方性リング磁石で、上記中心角θ1/中心角θ2の条件を満たすためには、各空隙部23の内面側に配置されたコイル25の数は好ましくは2〜10であり、より好ましくは3〜8である。上記コイル25の数が1であると、各コイル25の外径が大きすぎ、キャビティ26内に磁場を形成する効率が低い。また上記コイル25の数を10超とすると、各コイル25の結線が複雑化し、かつコイル25を構成する導線の径が小さくなり、大電力のパルスの負荷に耐えられない。\n\n【0040】\n\nまた図17(c) に示すように、各空隙部23が拡大して、各空隙部23の内面側に配置された複数のコイル25がなす中心角θ1が隣接する空隙部23内のコイル25がなす中心角θ2より著しく大きくなると、極異方性リング磁石内の磁化方向は本発明の要件を満たさなくなり、その結果表面磁束密度分布の正弦波整合率は著しく低下する。\n\n【0041】\n\n磁場中成形工程を経て得られた極異方性リング磁石では、焼結による収縮率が磁化容易方向(磁極位置)とその直交方向(磁極中間位置)とで10%近く異なる。このため、極異方性リング磁石では磁極部が凹状で、磁極中間部が凸状になり、焼結体の切削加工が必要になるだけでなく、成形時の配向状態が着磁工程でも維持されるとは限らない。このため、製品寸法、材質、磁化の程度等により決まる極異方性リング磁石の変形の度合いを考慮して、磁場中成形における配向方向を調整するのが好ましい。\n\n【0042】\n\n本発明を以下の実施例によりさらに詳細に説明するが、本発明はそれらに限定されるものではない。\n\n【0043】\n\n【実施例】\n\n実施例1\n\n8極の極異方性リング磁石(外径32 mm×内径24 mm×長さ25 mm)を以下の手順により製造した。まず質量%で20.0%のNd, 8.5%のPr, 4.5%のDy, 1.0%のB, 2.0%のCo, 0.1%のGa, 0.15%のCu, 及び残部Feからなる希土類磁石合金を水素吸蔵法によって脆化した後、粗粉砕し、32メッシュの篩により分級して、500 μm以下の粒径の粗粉を得た。この粗粉200 kgにパラフィンワックスを0.02質量%添加して、V型混合機中で混合し、原料粗粉とした。原料粗粉を酸素濃度0.001体積%の窒素ガス気流中でジェットミル微粉砕し、30分毎に平均粒径を測定し、平均粒径5.0 μm以下の成形用粉末を得た。\n\n【0044】\n\n磁場中成形は、図17(b) に示す磁場中成形用型(θ1≒θ2)を使用し、理論的磁化方向に対する実際の磁化方向の角度ズレが±0.5°以内となるようにしながら、経験的に知られている焼結による変形を考慮して磁場を印加しながら、Arガス雰囲気中で行った。\n\n【0045】\n\n得られた成形体を4 × 10-4Torrの真空中で1,080℃で2時間焼結した。得られた焼結体にArガス雰囲気中で900℃で2時間の熱処理と、550℃で1時間の熱処理を施した。加工及び着磁後の極異方性リング磁石の表面磁束密度分布の波形の実測値を図6に示す。図6から明らかなように、本実施例の正弦波整合率は約98%であった。\n\n【0046】\n\n比較例1\n\n実際の磁化方向の理論的磁化方向からの角度ズレが±2.7°超である以外実施例1と同じ条件で8極の極異方性リング磁石を製造し、表面磁束密度分布の波形を実測した。比較例1の実測値を図6に示す。比較例1の正弦波整合率は約90%であった。\n\n【0047】\n\n実施例2\n\n8極の極異方性リング磁石について、任意の位相角度における磁化方向を磁場解析により検討した。図10に解析モデルの座標系を示す。図10に示すように、解析モデル中の任意の位置における位相角度φ及び磁化方向θはX軸となす角とする。8極の極異方性リング磁石では、N極の中心5では磁化はX軸方向であり、θ = 0°である。N極及びS極の中間位置6(φ = 22.5°)では、磁化は径方向と垂直な方向であり、θ = 67.5°である。\n\n【0048】\n\n図11(a)に示すように、磁極中心(位相角度φ =磁化方向、θ = 0°)から磁極間の中間位置(φ = 22.5°、θ = 67.5°)にかけて等ピッチで位相角度φが変化するとき等角度ずつ磁化方向θが増加又は減少する場合、磁化方向θは波形歪次数d = 1.0の直線(1次\n\n式)で表される。一方、ラジアル異方性磁石のように、極中央での磁化方向の変化が緩やかで、磁極間の中間点で磁化方向が急激に変わる場合、磁化方向θは波形歪次数d = 1.8の曲線(高次関数)で近似される。波形歪次数dが大きいほど、中間点近傍での磁化方向の変化量が急峻となる。\n\n【0049】\n\nさらに表面磁束密度の波形について詳細に検討するため、本発明者等は波形の指標として、図11(a)における磁化方向が位相角度φの何次の関数(歪次数d)として近似できるかを解析した。\n\n【0050】\n\n表面磁束密度波形を電磁界解析したところ、図11(b)に示すように、磁化方向θが等角度ずつ増加又は減少する場合(d = 1.0)、正弦波に非常に近い表面磁束密度分布を得られることが分かった。歪次数dが大きくなるほど表面磁束密度のピーク値は低下し、d = 1.8の曲線のように矩形波状となる。\n\n【0051】\n\n波形の歪次数dをそれぞれ1.3及び1.5に変えた場合の磁場解析の結果を図11(a)及び(b) に併記する。歪次数dは、極異方性リング磁石の理想状態では1.0であり、ラジアル異方性磁石の場合には約2以上となることが分かった。\n\n【0052】\n\n極異方性リング磁石の表面磁束密度の波形を示す上記2つの指標(磁場解析上便利な歪次数d及び実測が容易な正弦波整合率)の関係を図12に示す。従来、焼結による変形等の製造上の困難さから、量産レベルでの極異方性リング磁石の表面磁束密度は、歪次数が約1.3〜1.5で正弦波整合率が約82〜89%であった。\n\n【0053】\n\n表面磁束密度の波形とコギングトルクとの関係について解析した結果、図13に示すように、歪次数1.2以下でコギングトルクの顕著な低減が見られた。このとき、正弦波整合率は93%以上であった。\n\n【0054】\n\n実施例3\n\n極異方性リング磁石の肉厚と表面磁束密度分布との関係について調査した結果、図14に示すように、肉厚の減少とともに表面磁束密度が低下することが分かった。しかし、肉厚が減少しても、正弦波整合率には変化がないことを確認した。例えば図5(a)に示す極異方性リング磁石は表面磁束密度が高く、図5(b)に示す極異方性リング磁石は表面磁束密度が低いが、正弦波整合率については両者の間に差はない。\n\n【0055】\n\n外径38 mmで内径15 mm以下の厚肉の極異方性リング磁石でも、同外径で内径18 mmのものと同じ表面磁束密度しか得られない。これから、図5(a)に示す幅Wの内周部分は極異方性リング磁石の磁気特性の向上にほとんど寄与しないことが確認された。このため、幅Wが実質的に存在しない形状に設計するのが好ましい。\n\n【0056】\n\n上記実施例では8極の極異方性リング磁石について説明したが、本発明はこれに限らず、4極以上の極異方性リング磁石に適用可能である。特に需要の多い8極〜16極の高品質の極異方性リング磁石を製造するのに好適である。\n\n【0057】\n\n【発明の効果】\n\n以上詳述したように、本発明により、極異方性リング磁石の表面磁束密度分布が正弦波に合致するように磁場中成形における磁粉配向方向を設定することができる。また従来は肉厚を経験的に設定していたので、リング磁石が無駄に厚くても分からなかったが、本発明により表面磁束密度の発生に無駄となる部分のない肉厚さを有する極異方性リング磁石を設計することができ、軽量化及びコスト削減の点で非常に有利である。これにより、コギングトルクを従来より著しく低減した軽量化モータが実現できる。さらに本発明により極\n\n端に薄くても正弦波整合率が高い極異方性リング磁石が得られるため、ハードディスク用モータ等の高速モータに好適である。\n\n【図面の簡単な説明】\n\n【図1】本発明の磁場中成形装置による極異方性リング磁石の磁化方向を示す概略図である。\n\n【図2】  極異方性リング磁石の製造工程を概要的に示す図である。\n\n【図3】本発明の磁場中成形装置による極異方性リング磁石の配向方向を示す概略図である。\n\n【図4】リング磁石の肉厚/半極幅と表面磁束密度の飽和率との関係を示すグラフである。\n\n【図5】  極異方性リング磁石における磁束線と肉厚との関係を示す概略図であり、(a)は極異方性リング磁石の一例を示し、(b) は極異方性リング磁石の他の例を示す。\n\n【図6】  実施例及び比較例における着磁波形の実測値を示すグラフである。\n\n【図7】  実施例1の極異方性リング磁石の磁化方向における表面磁束密度分布の計算値と実測値を示すグラフである。\n\n【図8】  表面磁束密度分布の正弦波整合率を説明するための図である。\n\n【図9】本発明の磁場中成形装置による極異方性リング磁石の表面磁束密度分布の測定結果を示すグラフである。\n\n【図10】  磁化方向及び位相角度の定義を示す図である。\n\n【図11】  位相角度と磁石特性との関係を示すグラフであり、(a) は位相角度と磁化方向との関係を示し、(b) は位相角度と表面磁束密度との関係を示す。\n\n【図12】  歪次数と表面磁束密度分布の正弦波整合率との関係を示すグラフである。\n\n【図13】  歪次数とコギングトルクとの関係を示すグラフである。\n\n【図14】  極異方性リング磁石の種々の肉厚における磁極角と表面磁束密度との関係を示すグラフである。\n\n【図15】  リング磁石の磁化方向を示す概略図であり、(a) はラジアル異方性リング磁石の磁化方向を示し、(b) は極異方性リング磁石の磁化方向を示す。\n\n【図16】  極異方性リング磁石の磁化方向の一例を示す概略図である。\n\n【図17】  極異方性リング磁石用の磁場中成形型を示す断面図であり、(a) は従来の極異方性リング磁石用の磁場中成形型の一例を示し、(b) は本発明の極異方性リング磁石用の磁場中成形型の一例を示し、(c) は比較例の極異方性リング磁石用の磁場中成形型の一例を示す。\n\n【符号の説明】\n\n1···磁場中成形工程\n\n2···焼結工程\n\n3···加工工程\n\n4···着磁工程\n\n5···磁極位置\n\n6···磁極中間位置\n\n7···磁極位置の内周側\n\n8···磁極位置の外周側\n\n9···曲線\n\n10···磁極間の中心位置\n\n11a, 11b···磁極\n\n17···領域\n\n21···成形型\n\n22···コアロッド\n\n23a, 23b, 23c···空隙部\n\n24···非磁性スリーブ\n\n25···コイル\n\n26···キャビティ', '【0001】\n\n技术领域\n\n本发明是磁场中的模具极性无序稀土烧结环磁体,当结合到电动机中时,基本上不会产生齿槽扭矩,特别是当结合到电机中时磁场中的模具痛苦。\n\n【0002】\n\n发明背景\n\n作为用于永磁同步电动机的转子等的磁体,径向各向异性磁体和极染料磁体如图1和2所示。图15(a)和15(b)。当任何磁体结合到电机中时会发生齿槽扭矩。齿槽扭矩取决于磁极的矩形和磁极之间的吸力强度。当齿槽扭矩增加时,在电动机旋转时增加振动和噪声,因此需要降低。随着齿槽扭矩的减小,(a),(a),(b)出现定子的齿形,关闭磁体的磁化波形到正弦波,优化定子的磁极数量和磁力转子。(d)已经进行了各种尝试,以扩展(e)磁极之间的间隙,该磁极在旋转轴方向上执行转子的歪斜或歪斜磁化。\n\n【0003】\n\n其中,将磁铁磁铁带到靠近正弦波的正弦波的装置可以减小齿槽扭矩而不会损失输出。由于磁通磁体在磁体中流入磁体中的磁体,因此极离散环磁体具有靠近正弦波的形状,因为表面磁通密度分布接近正弦波,具有矩形的径向误差波浪表面磁通密度分布。它对性磁铁有利。另外,由于与径向各向异性环磁体相比,极磁通磁通磁体可以增加表面磁通密度在约1.5倍的情况下,比径向各向异性磁体获得更高的输出。\n\n【0004】\n\n作为这种极性环磁体的模塑装置的示例,例如,日本专利申请公开No.2000-269062是在制造表面多极各向异性环时的磁场形成过程中使用的模制设备磁铁通过烧结方法。并且,环形成型空间由圆柱形非磁框架和柱状芯棒形成,并且当要制造的磁体的极点是n时,在模具框架中设置有n凹槽。用于施加磁场的线圈嵌入每个凹槽中,并公开了一种模制设备,其中N高渗透材料嵌入模具框架中的相邻凹槽之间。然而,使用该模塑装置,不可能获得具有靠近正弦波足够接近的正弦波的表面磁极密度分布的极磁环磁体。\n\n【0005】\n\n有必要将磁性粉末正式定向磁场中,以使极体动态环磁体的表面磁通密度分布到正弦波,即制备所需的正弦波匹配速率。然而,在JP-A-2000-269062中,如果接近磁粉的取向方向,则不陈述表面磁通密度。还添加了诸如通过烧结变形的因素,并且质量产物中表面磁通密度分布的正弦波匹配速率约为85至90%。\n\n【0006】\n\n专利文献1\n\n日本专利申请公开No.2000-269062\n\n【0007】\n\n本发明要解决的问题\n\n因此,本发明具有极障碍环磁体,当表面磁通密度分布的正弦匹配速率稳定并集成到电动机中时,基本上产生齿槽扭矩。磁场形成用于制造它是提供一种装置。\n\n【0008】\n\n[解决问题的手段]\n\n为了产生具有高正弦波匹配速率的表面磁通密度分布的偏振环磁体,需要优化磁场形式的磁性粉末的取向方向。为了优化磁粉的取向方向,例如,在JP-A-2000-269062中,正在制造磁场施加线圈和模架的设计,但是对于任何标准,不理解它应该是完成,设计是通过试验和错误进行的。\n\n【0009】\n\n最近,电磁场分析技术广泛用于电动机设计,特别是,有限元方法(FEM)不通过量化每个网格作为网格模型来使用部分微分方程。它是有用的,因为可以获得一个现实解决方案。然而,如果通过FEM执行环磁体的磁化方向(即,磁粉的对准方向的设计,即产生最佳磁化方向的设计),则磁体磁体和径向定向环形磁铁相对容易,杆子消毒环磁铁中没有明确标准。\n\n【0010】\n\n例如,在图1所示的极性各向异性环磁体中,如图15(b)所示,磁粉的取向在磁极的中间位置8处并且磁极的中间位置8在外周上相邻的磁极的中间位置8未知。也就是说,希望改变磁性粉末如何在极染料环磁体中从S杆到N极或N杆的变化。\n\n【0011】\n\n由于在这种情况下的密集研究,发明人等分析了环形磁体形成空间中的线圈磁场分布,如图2所示。如图3所示,如果磁化方向改变,则磁极位置和相邻位置之间在每个相等角间距的恒定角度,换句话说,如果磁化方向与径向位置中的位置相同,则表面磁通密度分布变为正弦波。我发现了。基于此类发现完成了本发明。\n\n【0012】\n\n即本发明的通过磁场中的成型装置偏振环磁体是在磁极位置的正常方向上的相邻磁极的中间位置的切向方向,以及杆位置和中间位置,杆位置的相等角度间距和相等角间距。当分成元件时,相邻元件的磁化方向具有基本恒定的角度差。\n\n【0013】\n\n与元件中的实际磁化方向的理论磁化方向的角度偏差优选地在磁极之间的中心角的6%以内。\n\n【0014】\n\n优选地,磁化方向在极离散环磁体的任何一个正常正常法线上的径向方向上基本恒定。\n\n【0015】\n\n极离散环磁体的外径为内径DI和磁极的数量。\n\n公式:DI.>优选地,满足由DO(p-1.5π)/ p表示的条件。\n\n【0016】\n\n周向表面磁通密度分布的测量波形优选具有93%或更多的匹配速率,用于同一循环的正弦波和峰值。\n\n【0017】\n\n在本发明中通过磁场中的成型装置杆不批准环磁体的制造方法将磁粉填充到环腔中,并在磁场位置的磁场位置中的磁场位置中的正常方向上形成磁场的形成,以及磁极的相邻的中间体磁极。当位置处的位置和(b)磁极位置和与该位置相邻的位置时,相邻元件的取向方向基本恒定。它的特征在于施加磁场以便。\n\n【0018】\n\n用于制备上述极性各向异性环磁体的本发明的磁场的模塑装置是具有圆形横截面空隙的成形模具,以及模制模具的横截面圆形以形成环 - 形状腔。圆柱形芯棒设置在气隙的中心,并且在模制模具的内表面上打开的多个空隙,以及布置在每个气隙中的多个线圈,以及沿着腔布置的多个线圈,中心角θ,沿着每个气隙中的腔腔多个线圈1和相邻气隙中线圈的中心角θ2比例为0.8至1.2。优选地,展开腔的侧面。\n\n【0019】\n\n在图1所示的极性各向异性环磁体的示例中,如图3所示,如扇形虚线U中的箭头所示,磁化方向是磁极位置中的正常方向(用n杆和s杆的磁化)方向是相反的方向),并且在相邻磁极的中间位置,切向方向和(B)虚线V2如箭头所示,其特征在于,当磁极位置和中间位置之间的区域被分成相等角度间距的元件时,相邻元件的磁化方向具有基本恒定的角度差。从每个元件中的实际磁化方向的理论磁化方向的偏差优选在磁极之间的中心角的6%以内。\n\n【0020】\n\n“理论磁化方向”定义如下参考图1所示。图。图3示出了从S杆的磁极位置5到达中间位置6到达的区域17(22.5°)的区域17(22.5°)的示例。每个元素P在虚线u跟随S杆51,P.2,P.3,P.4(它通过划分区域17表示区域17),并且基于S极的磁化方向,磁化方向与恒定角差依次改变。结果,磁化方向从S杆5与中间位置6成比例地变化。即,通过将S-电极5中的正常方向和中间位置6之间的角度分成角度而获得的角度(13.5°)通过元件的数量(5)(13.5 °),并且磁化方向(方向方向)顺序地改变。在图3所示的示例中,如图3所示,磁化方向W在N极0是0°,磁极之间的元件数量为10,因此,如理说,n杆w旁边的元件的磁化方向1是-13.5°,以及它旁边的元件的磁化方向2是-27.0°。\n\n【0021】\n\n理想的是,实际磁化方向与理论磁化方向之间没有偏差。例如,由于相邻磁极之间的中心角在8极杆极环磁体中为45°,因此理论磁化方向允许的实际磁化方向的角度偏差为45°×0.06 = 2.7°。换句话说,实际磁化方向w1良好的范围为-13.5°±2.7°,以及实际磁化方向w2在-27.0°±2.7°的范围内。当满足该条件时,表面磁通密度分布的正弦匹配率为93%以上。\n\n【0022】\n\n此外,本发明的通过磁场中的成型装置多根圆圈磁铁在图3中是虚线v1V.2如图所示,对准方向在任何一个正常情况下几乎恒定(在径向方向上不改变)。换句话说,由于来自来自磁极11a到磁极11b的磁通线可以由相同曲率的弧表示,所以它可以由基本上由单个曲线9的单个曲线9表示。另一方面,在具有与虚线所示具有不同曲率的多个磁通量线的极性流水线磁体中,表面磁通密度分布的正弦匹配速率低。也就是说,如果没有沿相邻磁极之间的相同曲率的弧形定向,则不能获得高正弦匹集匹配速率。\n\n【0023】\n\n即使是薄杆极杆杆磁铁,这种情况也不会改变。例如,即使连接相邻磁极的磁路被中断在包括磁极之间的中心位置10的区域中,如图2所示。如图5B所示(即使磁通线从环磁体的内周表面突出) )已经发现,可以获得具有优异的正弦波匹配速率的极不批准环磁体。\n\n【0024】\n\n表示磁通线的曲线与相邻磁极的中间位置10之间的交叉点与环磁体的内周表面接触,如图2所示。5A,或如图5(b)所示,环磁体优选在内周表面内突出。即使极离散环磁体加厚,也可以在图2中的虚线所示的内周面。如图5(a)所示,几乎没有获得磁特性的改善,并且简单地导致环重量的增加磁铁和成本。只。\n\n由此,可以看出,具有由虚线所示的内周表面的杆不批准环形磁体具有超过必要的厚度Wd。极离散环磁体的内径Di来自外径和磁极的数量。>它可以通过DO的等式(P-1.5π)/ p而设计。\n\n【0025】\n\n参考图4描述该规则。由于分析结果,发现当磁体的厚度与磁极宽度的比率超过一定的值时,表面磁通密度的饱和率(饱和磁通密度为100时的相对值%是100%)基本恒定。在图1中。在图4中,水平轴是半极宽度(从磁极到相邻的中间位置\n\n环形磁体的径向厚度与环形磁体的外周长的比率(%),垂直轴是恒定的,外径确实是恒定的,表面磁通密度饱和度[比率与最大值(%)Desig。环磁体的厚度是(外径DO  - 内径DI)÷2,半宽度是外径DO×π÷磁极数P≥2。当环形磁铁相对于半极宽度的厚度为150%以上时,可以看出磁通密度饱和。无论外径和磁极的数量如何,峰值磁通密度饱和为约150%。因此,即使偏振环磁体比该磁体厚,也不能尽可能地改善磁特性到内径侧。由此,将150%的水平轴设定为1.5>(环磁体的厚度/半宽度)作为阈值,并且获得等式(1)。\n\n【0026】\n\n在正常方向上,由于外径/内径比的对准方向不在径向方向上变化,因此切割内周表面,并且内周表面切割,薄杆极极磁环磁铁也,正弦波匹配率不会改变。迪>略微稀释,以满足(P-1.5π)/ p,一个特别适用于需要高速的轻质和高速等应用的杆状环磁体。\n\n【0027】\n\n尽管使用振动样品磁力计使用磁性汽车效应测量对准方向,但是由于X射线衍射,汽车效应和反射电子衍射而对磁畴结构观察的对准,以及诸如Lutherford背袋附带的方法。该可以测量方向。\n\n【0028】\n\n在本发明中通过磁场中的成型装置作为通过获得极批准环磁体而获得的组合物,R。2T.14基于B基磁体(R是稀土元素,T是过渡元件)和RCO,如SMCO。5系统和R.2CO.17比率磁铁,SMFEN等2T.17n系统和RT12基于N基磁铁,尤其是R2T.14可以提及基于B的烧结磁体,但可以是其他组合物的磁体。\n\n【0029】\n\n发明内容\n\n图。图2示意性地示出了Pliot稀土烧结环磁体的制造过程。烧结磁体的磁化图案通常由形成步骤1,烧结步骤2,处理步骤3和磁化步骤4的磁场决定,其由磁粉确定。由于难以校正方向磁性细胞4中的磁粉末,磁场介质中的磁性粉末的取向非常重要。\n\n【0030】\n\n例如,ND作为磁粉2Fe.14可以使用基于B的磁粉。注意,可以将其他稀土元素添加到Nd中,并且可以将CO添加到Fe中,并且可以将除B之外的半金属元素添加到B中。优选将磁粉的粒度分布调节至约3至10μm。\n\n【0031】\n\n图。图1示出了磁化方向,用于将正弦波匹配到从S杆到N极杆极杆极杆环磁体的区域中的正弦波。磁化方向(对准方向)在S杆的磁极位置5处的方向不同,但是是径向(法线方向),并且在S杆和N极的中间位置处(磁极中间位置)6,它是与法线方向正交的方向(切线方向)。尽管在这些位置5和6中设置磁化方向的设置易于,但重要的是将磁化方向设置在它们之间的区域17和17中是重要的。由于本发明人分析的结果,区域17和17中的磁化方向被分成相等的角度间距,并且每个划分元件中的磁化方向可以通过顺序角度顺序增加或减小。我理解。\n\n【0032】\n\n为了将表面磁通密度分布的正弦匹配速率设定为93%以上,优选的是,实际磁化方向与理论磁化方向之间的角度偏差是磁性之间的中心角度的6%或更少杆。如果角度偏差在3%范围内,并且超过2%,则可以实现98%以上的正弦匹配率。表面磁通密度分布的正弦波匹配速率由如图2所示的实际波形和表面磁通密度分布的循环和峰值和峰值之间的比较确定。8。具体地,由正弦波的半波形区域Sb确定测量波形SA的半波区域SA与正弦波SB的半波区域SB之间的差值的绝对值,并且(1- a )×100是正弦匹配率。\n\n【0033】\n\n无论如图1的虚线V1和V2所示,径向方向优选地大致相同。径向实际磁化方向是理论磁化方向上没有角度偏差的理想选择,而是在±0.5°或更小之内,获得93%以上的正弦波匹配速率为93%或更高,优选±1°,可以实现正弦波匹配速率。\n\n【0034】\n\n图。图7示出了实施例1的极性环磁体的极点磁通密度分布的计算值与测量值之间的关系。从图7的结果。如图7所示,可以看出两者都匹配很好。图。图9示出了实际极杆不批准环磁体的全周下的表面磁通密度分布的测量结果。另外,由于磁化方向可以与正常方向上的径向位置相同,因此可以假设磁场在环形磁体的厚度的中心处起作用。\n\n【0035】\n\n已经发现,磁场中的模制模具的结构是重要的,以便产生满足本发明要求的磁化方向,即对准的对准方向。从图1和2中所示的磁场中的模塑模具的比较显而易见。图17(a)至17(c)。\n\n【0036】\n\n图2中所示的结构的磁场的模制形式。通常使用图17A的结构,并且模具21的中心由具有圆形横截面空隙的磁体制成,以及横截面圆形的中心模具21.圆柱形芯杆22以多个狭缝状空隙23的形式布置在模具21的内表面和设置在内表面上的非磁性套筒24,以覆盖空隙23.它已。多个线圈25设置在每个空隙部分23中。每个线圈25串联连接以产生所示极性。每个气隙23中的线圈25的中心角231线圈25在相邻的气隙23中的中心角度232足够大。在这种情况下,由于在每个气隙23中由线圈25产生的磁场基本上是同心的,所以模制模具21的腔26中的磁化方向是书,因此模制的腔26中的磁化方向模具21不符合本发明的要求。通常,在图1中的磁场中获得的极磁通磁体的表面磁通密度分布的正弦匹配速率。图17A的磁场是约85%至90%。\n\n【0037】\n\n(b)所示结构的图17根据本发明磁场模具适用于获得极性各向异性环磁体。模具中的磁场的特征,在间隙部分23的间隙部分23的腔26中的膨胀侧沿着腔26的表面布置,气隙23中央角形成多个线圈25设置在θ的内表面侧1当由线圈25形成的中心角在相邻间隙部分23中形成时2DOO基本上等于。磁场分析结果,θ1≒θ.2对于在每个间隙部分23中产生多个线圈25的几乎同心的磁场,与相邻间隙部分23中的多个线圈25重叠,与相邻间隙部分23中的多个线圈25重叠,交替地是n极,为了形成S极,磁极之间的磁化方向基本上是圆形的。也就是说,当在与其相邻的中间位置和磁极位置在相等的角间距的元件中分开时,相邻元件的磁化方向具有基本恒定的角度差。对于具有这种磁化方向的极性各向异性环磁体,表面磁通密度分布的正弦波匹配非常高。\n\n【0038】\n\n在从每个元件的实际磁化方向的理论磁化方向的角度偏差中,在磁极之间的中心角的6%以内(正弦波匹配速率为93%或更多),中央角度θ1/中心角θ2优选的比例为0.8至1.2。中心角θ.1/中心角θ2优选的比例为0.9至1.1,更优选的范围为0.95至1.05。\n\n【0039】\n\n特别是在更多磁极的极性各向异性环磁体中,磁极8杆 -  16杆需求,中心角θ1/中心角θ2为了满足,因为设置在间隙部分23的内表面23上的线圈25的数量优选为2至10,更优选为3至8。如果是线圈25的数字1,则对于线圈25的外径太大,是腔26中的磁场的低效率。此外,当线圈25的10的10时,线圈25的连接变得复杂,并且减小构成线圈25的导线的直径减小,不承受高功率脉冲的负载。\n\n【0040】\n\n此外,如图2所示,如图17(c)所示,间隙部分23被放大,形成了设置在间隙部分23的内表面侧的多个线圈25的中心角θ1中心角θ,但由线圈25形成在相邻间隙部分23中2更大较大,各向异性环磁体的极磁化方向不再满足本发明的要求,得到表面磁通密度分布的正弦波匹配显着降低。\n\n【0041】\n\n通过烧结过程中通过磁场获得的极性各向异性环磁体,由于烧结引起的收缩件的易磁化方向(磁极位置)不同于近10%和其垂直方向(磁极中间位置)。因此,在极性各向异性环形磁体中的凹杆部分中,极体中间部分是凸的,不仅需要切割烧结体,保持在成型时保持佩戴对准状态,不一定是。因此,产品尺寸,材料,考虑到通过这种磁化程度确定的极性各向异性环磁体的变形程度,优选调节在磁场中压实的对准方向。\n\n【0042】\n\n将通过以下实施例更详细地描述本发明,但是本发明不限于此。\n\n【0043】\n\n【例子】\n\n例1\n\n通过以下步骤制备了(外径32mm×内径24mm×长25mm)的8极极性各向异性环磁体。第一种质量%,占ND的20.0%,8.5%的PR,Dy的4.5%,B,2.0%的CO,GA,储氢0.15%的Cu,稀土磁铁合金的0.1%,稀土磁铁合金通过法律脆化的平衡Fe,通过32目的筛子粗粉碎和分类,得到粒径为500μm或更小的粗粉末。通过加入0.02重量%加入粗粉的石蜡200kg,在V型混合器中混合以获得生膳食。原料用氧气磨削的氧气浓度为0.001%的氮气流量,每30分钟测量平均粒度,得到下列成型粉末,其平均粒径为5.0μm。\n\n【0044】\n\n在磁场中模制,图17(b)所示的磁场型模制品(θ1≒θ.2)使用,同时允许相对于理论磁化方向的角位移的实际磁化方向在±0.5°之内,同时考虑通过烧结经验已知的变形来施加磁场,其在气体气氛中进行。\n\n【0045】\n\n由此产生的模塑体4×10-4在1,080℃的真空中烧结2小时。在900℃下在Ar气体气氛中在900℃下热处理2小时的热处理烧结体在550℃下进行1小时的热处理1小时。偏光极磁通密度分布的测量值和图2中所示的磁化之后的偏极各向异性环磁体的测量值。如图6所示,本例的正弦波匹配率约为98%。\n\n【0046】\n\n比较例1\n\n与理论磁化方向的实际角度偏差在与实施例1中的相同条件下产生8个极的极性各向异性环磁体,除了2.7°±,实际测量表面磁通密度分布的波形。图2中所示的比较例1的测量值。比较例1的正弦波匹配率约为90%。\n\n【0047】\n\n例2.\n\n对于8极的极性各向异性环磁体,并且通过磁场分析研究了任意相位角的磁化方向。图10显示了分析模型的坐标系。如图1所示。如图10所示,相位角φ和磁化方向θ处于分析模型中的任何位置到X轴和角度。 8极极性各向异性环磁体,中心5磁化N极是X轴方向,是θ= 0°。在N和S杆的中间位置6(φ= 22.5°)中,磁化径向垂直于方向,它是θ= 67.5°。\n\n【0048】\n\n如图1所示。如图11(a)所示,磁极中心(相角phi =磁化方向,θ= 0°)磁极之间的中间位置(φ= 22.5°,θ= 67.5°)相位角phi如果在改变磁化方向θ线性波形失真度d = 1.0(1阶时,则在磁化方向θ增加或减小磁化方向θ的磁化方向θ增加或减小。\n\n公式)。另一方面,作为径向各向异性磁体,极磁化方向在中心逐渐变化,如果在磁极之间的中间点改变突然磁化方向,则磁化方向θ波形失真度d = 1.8曲线(近似高阶函数)。随着波形失真度D大,中点附近的磁化方向的变化量变得更陡峭。\n\n【0049】\n\n为了在更详细地研究进一步的表面磁通密度波形,发明人作为波形的索引,无论是图11(a)中的磁化方向是否可以近似为相位角PHI(失真度D)的顺序功能分析了。\n\n【0050】\n\n表面磁通密度波形电磁场分析,如图4所示。如图11(b)所示,如果磁化方向θ通过相等的角度(d = 1.0)增加或减小,则在正弦波中非常近于表面磁通密度分布它得到了它被发现。表面磁通密度为失真度D的峰值增加,矩形波作为曲线D = 1.8。\n\n【0051】\n\n还示出了在改变波形的失真度D的情况下磁场分析的结果,分别为1.3和1.5。图11(a)和(b)。当发现径向各向异性磁体约为2或更多时,应变度D在极性各向异性环磁体的理想状态下为1.0。\n\n【0052】\n\n图。图12示出了偏振各向异性环的两个指标,其两种指标表示磁体的表面磁通密度的波形(磁场分析,在方便的失真度D和测量的易正弦匹配速率上)。传统上,在烧结引起的变形如变形的难以,批量生产水平的极性各向异性环磁体的表面磁通密度,正弦波匹配速率约为82%至89%,在其中的应变订单约为1.3至1.5是。\n\n【0053】\n\n如图2所示,分析波形和齿槽扭矩之间的关系的表面磁通不同的结果。如图13所示,观察到齿槽扭矩失真程度显着降低。此时,正弦波匹配率为93%以上。\n\n【0054】\n\n例3.\n\n作为研究磁体的极性各向异性环厚度和表面磁通密度分布之间的关系,如图2所示。如图14所示,发现壁厚的表面磁通密度降低。然而,壁厚也降低,确认了正弦波匹配速率,没有变化。例如,图5(a)表面磁通密度所示的图5(a)偏极 - 各向异性环磁体高,但极偏极环磁体具有低表面磁通密度,如图5(b)所示,均为正弦波匹配速率与它们之间没有区别。\n\n【0055】\n\n均匀的内径15mm外径38mm以下的极性各向异性环磁体,仅在具有相同外径的内径18mm的内径18mm的表面磁通密度。现在,图3中所示的宽度W的内周部分包括:图5(a)的宽度不贡献偏端各向异性环磁体的磁性的提高。因此,优选设计宽度W的形状基本上不存在。\n\n【0056】\n\n尽管在上述实施例中已经描述了极杆极杆状环磁体,但是本发明不限于此,并且适用于4极或更多极水源环磁体。它特别适用于生产高质量的高质极性环磁体至第六杆,具有高需求。\n\n【0057】\n\n【发明效果】\n\n如上所述,根据本发明,可以设定磁场形式的磁粉末取向方向,使得极环磁体的表面磁通密度分布与正弦波相匹配。另外,由于厚度被凭证设定,因此环磁体不会浪费,但是具有根据本发明的表面磁通密度的产生而没有浪费的厚度的杆。这是非常有利的减轻和降低成本。由此,可以实现具有显着减小的齿槽扭矩的轻质电动机。此外,根据本发明\n\n由于即使在末端薄,也可以获得具有高正弦匹配速率的极性稀疏环磁体,因此它适用于诸如硬盘电动机的高速电动机。\n\n[简要描述;简介]\n\n【图1】在本发明中通过磁场中的成型装置图3是表示极不批准环磁体的磁化方向的示意图。\n\n【图2】图3是表示极不批准环磁体的制造过程的图。\n\n图3.在本发明中通过磁场中的成型装置图3是表示极不批准环磁体的对准方向的示意图。\n\n图4.图3是表示环形磁体的厚度/半极宽度与表面磁通密度的饱和率之间的关系的图。\n\n图5.图3是表示极离散环磁体中的磁通线和厚度之间的关系的示意图,(a)示出了极离散环磁体的示例,(b)是另一极离散环磁体示出。\n\n6.图3是表示实施例和比较例中的磁化波形的测量值的图。\n\n图7.图3是表示实施例1的极性环磁体的磁化方向上的表面磁通密度分布的计算值和测量值的图。\n\n图8.图3是说明表面磁通密度分布的正弦波匹配速率的图。\n\n图9在本发明中通过磁场中的成型装置图3是表示极不批准环磁体的表面磁通密度分布的测量结果的图。\n\n图10.图3是表示磁化方向和相位角的定义的图。\n\n11.图3是表示相角和磁体特性之间的关系的曲线图,(a)表示相角和磁化方向之间的关系,(b)表示相角和表面磁通密度之间的关系。\n\n12.图3是表示与应变令的数量和表面磁通密度分布的正弦波匹配率的关系的图。\n\n图13.图3是表示失真次数与齿槽扭矩之间的关系的图。\n\n14.图3是表示极离散环磁体的各种厚度的磁极角度与表面磁通密度之间的关系的图。\n\n图15.图3是表示环磁体的磁化方向的示意图,(a)表示径向各向异性环磁体的磁化方向,(b)表示极染料环磁体的磁化方向。\n\n图16图3是表示极不批准环磁体的磁化方向的一例的示意图。\n\n图17.图3是表示磁场不批准环磁体的磁场形式模具的剖视图,(a)示出了传统极障碍环磁体的模具型模具类型的示例,(b)是本发明的极点示出了用于各向异性环磁体的模制模具,并且(c)示出了对比例的极性环磁体的磁场中的模制模具的示例。\n\n[标志的说明]\n\n1···磁场形成过程\n\n2···烧结过程\n\n3··处理过程\n\n4···磁化过程\n\n5···磁极位置\n\n6···杆位置\n\n7···磁极位置的内圆周侧\n\n8··磁极位置的外侧\n\n9····曲线\n\n10·磁极之间的中心位置\n\n11A,11B ...磁极\n\n17 ......区域\n\n21···模具模具\n\n22·········芯棒\n\n23a,23b,23c···空隙\n\n24 ......分子袖\n\n25····卷\n\n26····腔');
INSERT INTO `os_patent_instruction_text` VALUES (12993, 22822, 'FIELD OF THE INVENTION\n\n[0001]The present invention relates to a polar-anisotropic ring magnet, and a method and an apparatus for producing it, particularly to a polar-anisotropic, sintered rare earth ring magnet generating substantially no cogging torque when installed in a motor, and a method and an apparatus for producing such a polar-anisotropic, sintered rare earth ring magnet.\n\nBACKGROUND OF THE INVENTION\n\n[0002]A radial-anisotropic magnet and a polar-anisotropic magnet shown in FIGS. 15(a) and 15(b) are known as magnets used in rotors, etc. of permanent magnet synchronous motors. Either magnet generates a cogging torque when installed in a motor. The cogging torque depends on the rectangularity of magnetic poles and an attraction force between magnetic poles. Because a larger cogging torque results in larger vibration and noise while a motor is rotating, it is desirable to reduce the cogging torque. Various attempts have been made to reduce the cogging torque; (a) contriving a stator tooth tip design, (b) providing a magnet with a magnetization waveform close to a sine wave, (c) optimizing the number of magnetic poles on both a stator and a rotor, (d) skewing or skew-magnetizing a rotor to provide it with magnetization averaged in a rotation axis direction, (e) widening gaps between magnetic poles, etc.\n\n[0003]Among them, the means (b) of providing a magnet with a magnetization waveform close to a sine wave can reduce the cogging torque without decreasing its power. Because a magnetic flux between adjacent magnetic poles flows in an arcuate form in a polar-anisotropic ring magnet, a surface magnetic flux density distribution has a waveform close to a sine wave, so that a polar-anisotropic ring magnet is advantageous over a radial-anisotropic magnet having a surface magnetic flux density distribution in a rectangular waveform. In addition, because a polar-anisotropic ring magnet can have a surface magnetic flux density as high as about 1.5 times that of a radial-anisotropic ring magnet, higher power can be obtained by the polar-anisotropic ring magnet than by the radial-anisotropic magnet.\n\n[0004]As an example of an apparatus for molding a polar-anisotropic ring magnet, JP 2000-269062 A discloses a molding apparatus used in a magnetic-field-molding step in the production of an anisotropic ring magnet having a plurality of poles on its surface by a sintering method, which comprises a cylindrical, nonmagnetic die and a columnar rod core for defining a ring-shaped, molding space, the molding die having n grooves to produce a magnet having n magnetic poles, a coil for applying a magnetic field being received in each groove, and high-magnetic-permeability members being buried between adjacent grooves of the die However, this molding apparatus fails to provide a polar-anisotropic ring magnet with a surface magnetic flux density distribution sufficiently close to a sine wave.\n\n[0005]To make the surface magnetic flux density distribution of a polar-anisotropic ring magnet close to a sine wave, namely, to make it have a desired sine wave-matching rate, magnetic powder should be properly oriented in magnetic field molding. However, JP 2000-269062 A does not teach at all in which direction the magnetic powder should be oriented to make its surface magnetic flux density close to a sine wave. With such factors as sintering deformation, etc., the sine wave-matching rate of the surface magnetic flux density distribution is about 85 to 90% in mass-produced magnets.\n\nOBJECTS OF THE INVENTION\n\n[0006]Accordingly, an object of the present invention is to provide a polar-anisotropic ring magnet having a surface magnetic flux density distribution with a stably high sine wave-matching rate, which generates substantially no cogging torque when installed in a motor, and a method and an apparatus for producing such a polar-anisotropic ring magnet.\n\nDISCLOSURE OF THE INVENTION\n\n[0007]To produce a polar-anisotropic ring magnet having a surface magnetic flux density distribution with a high sine wave-matching rate, it is necessary to optimize the orientation direction of magnetic powder in magnetic field molding. Though the designs of magnetic-field-applying coils and molding dies have been devised to optimize the orientation direction of magnetic powder as taught by JP 2000-269062 A, for instance, no clear criterion for optimization has not been found, and their designing has actually been conducted on a try-and-error basis.\n\n[0008]Recently, technologies for electromagnetic field analysis have been widely used for the designing of motors. Among them, a finite element method (FEM) is useful, because it provides a realistic solution by digitizing each mesh of a mesh-modeled object without using partial differential equations, etc. As far as the designing by FEM of ring magnets with respect to magnetization directions (orientation directions of magnetic powder for optimizing the magnetization directions) is concerned, however, there has been no clear criterion in polar-anisotropic ring magnets, though it is relatively easy in segment magnets and ring magnets having radial orientation.\n\n[0009]In a polar-anisotropic ring magnet shown in FIG. 15(b), for instance, how magnetic powder should be oriented is not clear at all at a position 7 inside the magnetic pole and at a middle position 8 between adjacent magnetic poles on the periphery. It is thus not clear how magnetic powder should be oriented from an S pole to an N pole or from an N pole to an S pole in a polar-anisotropic ring magnet.\n\n[0010]As a result of intense research in such a situation, the inventors have found, through the analysis of a distribution of a magnetic field generated by coils in a space in which a ring magnet is formed, that when the magnetization direction changes by an equal angle pitch between a magnetic pole position and its adjacent position, in other words, when the magnetization directions are the same on an arbitrary normal line regardless of radial positions, as shown in FIG. 3, the surface magnetic flux density distribution is in the form of a sine wave. The present invention has been completed based on this finding.\n\n[0011]Thus, the polar-anisotropic ring magnet of the present invention has magnetization directions in alignment with its normal line at each magnetic pole position and in alignment with its tangential line at each middle position between adjacent magnetic poles, and has a substantially constant angle difference in a magnetization direction between adjacent elements, the elements being obtained by division at an equal angle pitch between the magnetic pole position and the middle position adjacent to the magnetic pole position.\n\n[0012]The angle difference between an actual magnetization direction and a theoretical one in the element is preferably within 6% of a central angle between the magnetic poles.\n\n[0013]The polar-anisotropic ring magnet preferably has a magnetization directions, which are substantially constant on its arbitrary normal line at any radial position.\n\n[0014]The polar-anisotropic ring magnet preferably has an outer diameter Do, an inner diameter Di and the number of magnetic poles P, which meet a condition represented by the formula of Di≧Do(P−1.5π)/P.\n\n[0015]The measured waveform of the surface magnetic flux density distribution in a circumferential direction preferably has a matching rate of 93% or more to a sine wave having the same period and peak.\n\n[0016]The method for producing a polar-anisotropic ring magnet of the present invention comprises applying a magnetic field in the molding of magnetic powder charged into a ring-shaped cavity, such that (a) the magnetic powder is oriented along a normal line at each magnetic pole position and along a tangential line at each middle position between adjacent magnetic poles, and that (b) when the polar-anisotropic ring magnet is divided to elements at an equal angle pitch between the magnetic pole position and the middle position adjacent to the magnetic pole position, an angle difference in a magnetization direction between adjacent elements is substantially constant.\n\n[0017]The magnetic-field-molding apparatus of the present invention used in the production of the above polar-anisotropic ring magnet comprises a molding die having a circular cross-sectional bore; a columnar rod core concentrically disposed in the circular cross-sectional bore of the die to define a ring-shaped cavity; a plurality of recesses opening on the inner surface of the die; and a plurality of coils disposed in each recess, a plurality of coils being aligned along the cavity, and a ratio of a central angle θ1 defined by a plurality of coils aligned along the cavity in each recess to a central angle θ2 between coils in the adjacent recesses being 0.8 to 1.2. Such recess is preferably enlarged on the side facing the cavity.\n\n[0018]In an example of the polar-anisotropic ring magnet partially shown in FIG. 3, (a) the magnetization direction is in alignment with a normal line at a magnetic pole position and completely opposite between the N pole and the S pole, while it is in a tangential direction at a middle position between the adjacent magnetic poles, as shown by arrows in a fan-shaped, broken line U, and (b) when a region between the magnetic pole position and the middle position is divided to elements at an equal angle pitch, there is a substantially constant angle difference in magnetization directions between adjacent elements, as shown by arrows in a fan-shaped, broken line V2. The deviation of the actual magnetization direction from the theoretical magnetization direction in each element is preferably within 6% of the central angle between the magnetic poles.\n\n[0019]The “theoretical magnetization direction” is defined as follows, referring to FIG. 3, which exemplifies that a region 17 (22.5°) from an S pole position 5 to a middle position 6 is equally divided to 5 elements in a polar-anisotropic ring magnet with eight magnetic poles. In each element P1, P2, P3, P4 shown by the lines pentasecting the region 17 in the broken line U next to the S pole 5, the magnetization direction changes successively at a constant angle difference from the S pole. Namely, the magnetization direction proportionally changes from the S pole 5 to the middle position 6. Thus, the magnetization (orientation) direction changes successively by an angle (13.5°) obtained by dividing an angle (−67.5° in this example) between the normal line at the S pole 5 and the tangential line at the middle position 6 by the number (5) of elements. In the example shown in FIG. 3, in which the magnetization direction W0 at the N pole is 0°, and the number of elements is 10, the magnetization direction W1 in an element adjacent to the N pole is theoretically −13.5°, and the magnetization direction W2 in the next element is theoretically −27.0°.\n\n[0020]There is ideally no difference between an actual magnetization direction and a theoretical one. For instance, because a central angle between adjacent magnetic poles is 45° in a polar-anisotropic ring magnet with eight magnetic poles, the permitted angle deviation of the actual magnetization direction from the theoretical one is 45°×0.06=2.7°. The actual magnetization direction W1 may thus be in a range of −13.5°±2.7°, and the actual magnetization direction W2 may be in a range of −27.0°±2.7°. Under these conditions, the sine wave-matching rate of the surface magnetic flux density distribution is 93% or more.\n\n[0021]Further, the polar-anisotropic ring magnet of the present invention has a substantially constant orientation direction on an arbitrary normal line at any radial position, as shown in the broken lines V1, V2 in FIG. 3. In other words, because there are arcuate magnetic flux lines having the same curvature between the magnetic poles 11a and 11b in FIG. 15(b), they may be expressed substantially by one arcuate curve 9. In a polar-anisotropic ring magnet having a plurality of magnetic flux lines with different curvatures as shown by dotted lines in FIG. 16, however, its surface magnetic flux density distribution has a low sine wave-matching rate. Namely, a high sine wave-matching rate cannot be obtained, unless there is orientation along arcs of the same curvature between adjacent magnetic poles.\n\n[0022]This condition should be met even in a thin, polar-anisotropic ring magnet. It has been found that even if a magnetic circuit between adjacent magnetic poles is not connected in a region including a center position 10 as shown in FIG. 5(b), that is, even if magnetic flux lines project inward from the inner surface of the ring magnet, a polar-anisotropic ring magnet can have an excellent sine wave-matching rate.\n\n[0023]It is preferable that the intersection of a curve expressing magnetic flux lines and the middle position 10 between the adjacent magnetic poles is in contact with the inner surface of the ring magnet as shown in FIG. 5(a) or projects from the inner surface of the ring magnet as shown in FIG. 5(b). When the polar-anisotropic ring magnet is so thick as to have an inner surface as shown by the broken line in FIG. 5(a), its magnetic properties are hardly improved, simply resulting in increase in weight and cost. It is thus clear that the polar-anisotropic ring magnet having the inner surface as shown by the broken line is thicker by Wd than necessitated. The inner diameter Di of the polar-anisotropic ring magnet can be designed from the outer diameter Do and the number P of magnetic poles by the formula of Di≧Do(P−1.5π)/P.\n\n[0024]Reasons for this relation will be explained referring to FIG. 4. Analysis has indicated that when the ratio of the magnet thickness to the distance between magnetic poles exceeds a certain level, the saturation rate of a surface magnetic flux density, a relative value to the saturated magnetic flux density (100%), becomes substantially constant. In FIG. 4, the axis of abscissas shows a ratio (%) of a radial thickness of the ring magnet to a half interpolar distance (peripheral length from one magnetic pole to its adjacent middle position), and the axis of ordinates shows the saturation rate of the surface magnetic flux density (percentage to the maximum value), when the inner diameter Di changes with the outer diameter Do fixed. The thickness of the ring magnet is (outer diameter Do−inner diameter Di)/2, and the half interpolar distance is (outer diameter Do×π)/2 (number P of magnetic poles). It has been found that when the ratio of the thickness of the ring magnet to the half interpolar distance is 150% or more, the magnetic flux density is saturated. The peak magnetic flux density is saturated at the ratio of about 150% regardless of the outer diameter and the number of magnetic poles. Accordingly, what happens by making the polar-anisotropic ring magnet further thicker is only the addition of a useless portion on the inner side, failing to provide improved magnetic properties. This sets the threshold in the axis of abscissas at 150%, providing the formula (1) from 1.5>(thickness of ring magnet/half interpolar distance).\n\n[0025]Because the orientation direction does not change depending on a radial position on a normal line, the sine wave-matching rate does not change, even if a polar-anisotropic ring magnet having a large ratio of the outer diameter to the inner diameter is produced and cut on its inner side to become a thin polar-anisotropic ring magnet. Making a polar-anisotropic ring magnet thin to meet the condition of Di≧Do(P−1.5π)/P makes it particularly suitable for applications such as disc motors needing light weight and high speed.\n\n[0026]Though the orientation direction is measured by a vibrating sample magnetometer utilizing a magnetic Karr effect in the present invention, it may be measured by the observation of magnetic domain structures by X-ray diffraction, Karr effect, etc., reflection electron diffraction, Rutherford back-scattering, etc.\n\n[0027]With respect to compositions for providing the polar-anisotropic ring magnet of the present invention, R2T14B-based magnets (R represents rear earth elements and T represents transition elements) such as NdFeB, etc., RCo5— or R2Co17-based magnets such as SmCo, etc., R2T17N— or RT12N-based magnets such as SmFeN, etc. may be used, and R2T14B-based sintered magnets are particularly preferable, though magnets having other compositions may also be used.\n\nBRIEF DESCRIPTION OF THE DRAWINGS\n\n[0028]FIG. 1 is a schematic view showing magnetization directions in the polar-anisotropic ring magnet of the present invention;\n\n[0029]FIG. 2 is a diagram schematically showing the steps of producing a polar-anisotropic ring magnet;\n\n[0030]FIG. 3 is a schematic view showing orientation directions in the polar-anisotropic ring magnet of the present invention;\n\n[0031]FIG. 4 is a graph showing the relation between a ratio of a ring magnet thickness to a half interpolar distance and a saturation rate of a surface magnetic flux density;\n\n[0032]FIG. 5(a) is a schematic view showing the relation between magnetic flux lines and a thickness in one example of the polar-anisotropic ring magnet;\n\n[0033]FIG. 5(b) is a schematic view showing the relation between magnetic flux lines and a thickness in another example of the polar-anisotropic ring magnet;\n\n[0034]FIG. 6 is a graph showing magnetization waveforms measured in Example and Comparative Example;\n\n[0035]FIG. 7 is a graph showing the calculated value and measured value of a surface magnetic flux density distribution in a magnetization direction in the polar-anisotropic ring magnet of Example 1;\n\n[0036]FIG. 8 is a graph for explaining a sine wave-matching rate of a surface magnetic flux density distribution;\n\n[0037]FIG. 9 is a graph showing the measurement results of a surface magnetic flux density distribution in the polar-anisotropic ring magnet of the present invention;\n\n[0038]FIG. 10 is a view showing the definition of a magnetization direction and a phase angle;\n\n[0039]FIG. 11(a) is a graph showing the relation between a magnetization direction and a phase angle;\n\n[0040]FIG. 11(b) is a graph showing the relation between a phase angle and a surface magnetic flux density;\n\n[0041]FIG. 12 is a graph showing the relation between a distortion degree and a sine wave-matching rate of a surface magnetic flux density distribution;\n\n[0042]FIG. 13 is a graph showing the relation between a distortion degree and a cogging torque;\n\n[0043]FIG. 14 is a graph showing the relation between a magnetic pole angle and a surface magnetic flux density in polar-anisotropic ring magnets having various thicknesses;\n\n[0044]FIG. 15(a) is a schematic view showing magnetization directions in a radial-anisotropic ring magnet;\n\n[0045]FIG. 15(b) is a schematic view showing magnetization directions in a polar-anisotropic ring magnet;\n\n[0046]FIG. 16 is a schematic view showing one example of magnetization directions in a polar-anisotropic ring magnet;\n\n[0047]FIG. 17(a) is a cross-sectional view showing one example of a magnetic-field-molding die for a conventional polar-anisotropic ring magnet;\n\n[0048]FIG. 17(b) is a cross-sectional view showing one example of a magnetic-field-molding die for the polar-anisotropic ring magnet of the present invention; and\n\n[0049]FIG. 17(c) is a cross-sectional view showing one example of a magnetic-field-molding die for a polar-anisotropic ring magnet in Comparative Example.\n\nDESCRIPTION OF THE PREFERRED EMBODIMENTS\n\n[0050]FIG. 2 schematically shows the production steps of a polar-anisotropic, sintered rare earth ring magnet. Though a magnetization pattern in a sintered magnet is generally determined by a magnetic-field-molding step 1, in which magnetic powder is molded with orientation, a sintering step 2, a working step 3 and a magnetization step 4, the orientation of magnetic powder in the magnetic-field-molding step 1 is extremely important for a polar-anisotropic ring magnet, because it is difficult to reorient magnetic powder in the magnetization step 4.\n\n[0051]The magnetic powder may be, for instance, Nd2Fe14B-based magnetic powder. Other rare earth elements such as Dy, etc. may be added to Nd, Co may be added to Fe, and metalloid elements other than B may be added to B. The particle size distribution of the magnetic powder is preferably adjusted to about 3 μm to 10 μm.\n\n[0052]FIG. 1 shows magnetization directions, with which a surface magnetic flux density distribution is in alignment with a sine wave, in a region from an S pole to an N pole in a polar-anisotropic ring magnet with eight magnetic poles. The direction of easy magnetization (orientation direction) is in a radial direction (normal line direction) at S and N pole positions 5, though opposite to each other. On the other hand, the orientation direction is perpendicular to the normal line, namely in alignment with a tangential line, at a middle position 6 between the S pole and the N pole (middle position between the magnetic poles). Though the magnetization direction can easily be set at these positions 5, 6, how it is set in regions 17, 17 between them is important. The inventors\' analysis has revealed that the magnetization directions in each region 17, 17 can be set by dividing the region between the magnetic poles 5, 6 to elements at an equal angle pitch, and successively increasing or decreasing the magnetization direction in each element by an equal angle.\n\n[0053]To achieve a sine wave-matching rate of 93% or more in a surface magnetic flux density distribution, an angle difference between the actual magnetization direction and the theoretical one is preferably 6% or less of the central angle between magnetic poles. The angle difference is preferably 3% or less, more preferably 2% or less to achieve a sine wave-matching rate of 98% or more. As shown in FIG. 8, the sine wave-matching rate of the surface magnetic flux density distribution is determined by comparing the measured waveform of the surface magnetic flux density distribution with a sine wave having the same period and peak. Specifically, the sine wave-matching rate is determined by (1−A)×100, wherein A is a quotient obtained by dividing |Sa-Sb| by Sb, Sa being an area of a half-wave region of the measured waveform, and Sb being an area of a half-wave region of the sine wave.\n\n[0054]With respect to the radial direction, as shown by broken lines V1, V2 in FIG. 3, it is preferable that the magnetization directions are substantially the same regardless of radial positions. Though it is ideal that the actual magnetization direction is the same as the theoretical one at any radial position, the acceptable angle difference therebetween is within ±2.5° to obtain the sine wave-matching rate of 93% or more, preferably within ±1°. The sine wave-matching rate of 95% or more can be realized with the angle difference of within ±0.5°.\n\n[0055]FIG. 7 shows the relation between the calculated surface magnetic flux density distribution and the measured one in the polar-anisotropic ring magnet of Example 1. It is clear from FIG. 7 that they are in good agreement with each other. FIG. 9 shows the measurement results of the surface magnetic flux density distribution in an entire circumference of an actual, polar-anisotropic ring magnet. Because the magnetization directions on a normal line are the same regardless of radial positions, analysis may be conducted on the assumption that the magnetic field is applied to a center portion of the ring magnet in a thickness direction.\n\n[0056]It has been found that the structure of a magnetic-field-molding die is important to produce a polar-anisotropic ring magnet having magnetization directions, or orientation directions, meeting the requirements of the present invention. This is clear from the comparison of magnetic-field-molding dies shown in FIGS. 17(a) to 17(c).\n\n[0057]The magnetic-field-molding die having a structure shown in FIG. 17(a), which has conventionally been used, comprises a molding die 21 made of a magnetic material having a circular cross-sectional bore, a columnar rod core 22 concentrically disposed in the circular cross-sectional bore of the molding die 21, a plurality of slit-shaped recesses 23 opening on the inner surface of the molding die 21, and a nonmagnetic sleeve 24 disposed on the inner surface of the molding die 21 such that it covers the recesses 23. A plurality of coils 25 are received in each recess 23. The coils 25 are connected in series to generate polarity shown in the figure. A central angle θ2 between the coils 25 in adjacent recesses 23 is sufficiently larger than a central angle θ1 defined by the coils 25 in each recess 23. In such case, magnetic fields generated by the coils 25 in each recess 23 are substantially concentric, but magnetization directions in a cavity 26 of the molding die 21 do not meet the requirement of the present invention because of little overlap of adjacent magnetic fields with opposite polarities. The polar-anisotropic ring magnet formed by the magnetic-field-molding die shown in FIG. 17(a) generally has a surface magnetic flux density distribution, whose sine wave-matching rate is about 85 to 90%.\n\n[0058]The magnetic-field-molding die having a structure shown in FIG. 17(b) is suitable for molding the polar-anisotropic ring magnet of the present invention. This magnetic-field-molding die is characterized in that each recess 23 is expanded on the side of a cavity 26, such that a plurality of coils 25 are aligned along the surface of the cavity 26; and that a central angle θ1 defined by a plurality of coils 25 in each recess 23 is substantially equal to a central angle θ2 between the coils 25 in adjacent recesses 23. Magnetic field analysis has revealed that in a case where θ1 is nearly equal to θ2, substantially concentric magnetic fields generated by a plurality of coils 25 in one recess 23 overlap substantially concentric magnetic fields with opposite polarity generated by a plurality of coils 25 in the adjacent recess 23, so that N and S poles are formed alternately with a substantially circular magnetic field between the magnetic poles. Thus, when a region between a magnetic pole position and a middle position adjacent thereto is divided to elements at an equal angle pitch, an angle difference in magnetization directions between adjacent elements is substantially constant. The polar-anisotropic ring magnet having such magnetization directions has a surface magnetic flux density distribution with an extremely high sine wave-matching rate.\n\n[0059]In order that an angle difference between an actual magnetization direction and a theoretical one in each element is 6% or less of a central angle between magnetic poles, namely in order that a sine wave-matching rate is 93% or more, a ratio of the central angle θ1 to the central angle θ2 is preferably 0.8 to 1.2. The ratio of the central angle θ1 to the central angle θ2 is preferably 0.9 to 1.1, more preferably 0.95 to 1.05.\n\n[0060]To meet the above condition concerning the ratio of the central angle θ1 to the central angle θ2 in polar-anisotropic ring magnets with 8 to 16 magnetic poles, which are particularly in great demand, the number of coils 25 disposed along an inner surface of the cavity in each recess 23 is preferably 2 to 10, more preferably 3 to 8. When the above number of coils 25 is 1, the outer diameter of each coil 25 is too large to efficiently generate a magnetic field in the cavity 26. On the other hand, when the above number of coils 25 exceeds 10, connections between the coils 25 are too complicated, and wires constituting the coils 25 have too small a diameter, failing to withstand a high-power pulse.\n\n[0061]As shown in FIG. 17(c), when each recess 23 is so enlarged that a central angle θ1 defined by a plurality of coils 25 disposed along an inner surface of a cavity in each recess 23 is extremely larger than a central angle θ2 between coils 25 in adjacent recesses 23, the resultant polar-anisotropic ring magnet does not have magnetization directions meeting the requirements of the present invention, resulting in extreme decrease in the sine wave-matching rate of the surface magnetic flux density distribution.\n\n[0062]The polar-anisotropic ring magnet obtained through a magnetic-field-molding step has a sintering shrinkage ratio differing by nearly 10% between an easy magnetization direction at a magnetic pole position and a direction perpendicular thereto at a middle position between magnetic poles. The polar-anisotropic ring magnet is thus dented in magnetic pole portions and bulged in middle portions between magnetic poles, needing cutting after sintering, and failing to keep a molding orientation at a magnetizing step. It is thus preferable to control orientation in magnetic field molding, taking into account the degree of deformation of the polar-anisotropic ring magnet determined by its size, material and degree of magnetization, etc.\n\n[0063]The present invention will be described in detail referring to Examples below without intention of restricting it thereto.\n\nEXAMPLE 1\n\n[0064]A polar-anisotropic ring magnet with 8 magnetic poles of 32 mm in outer diameter, 24 mm in inner diameter and 25 mm in length was produced by the following process. First, a rare earth magnet alloy comprising 20.0% by mass of Nd, 8.5% by mass of Pr, 4.5% by mass of Dy, 1.0% by mass of B, 2.0% by mass of Co, 0.1% by mass of Ga, and 0.15% by mass of Cu, the balance being Fe, was embrittled by a hydrogen absorption method, and then coarsely pulverized and classified with a 32-mesh sieve to obtain a coarse powder having a particle size of 500 μm or less. 200 kg of the coarse powder was mixed with 0.02% by mass of a paraffin wax in a V-type mixer to obtain a coarse starting material powder. The coarse starting material powder was pulverized by a jet mill in a nitrogen gas stream having an oxygen concentration of 0.001% by volume, with its average particle size measured every 30 minutes, to obtain a molding powder having an average particle size of 5.0 μm or less.\n\n[0065]Using a magnetic-field-molding die with θ1 nearly equal to θ2 shown in FIG. 17(b), molding was carried out in an Ar gas atmosphere while applying a magnetic field determined by taking empirically known sintering deformation into consideration, such that an angle deviation of an actual magnetization direction from the theoretical one was kept within ±0.5°.\n\n[0066]The resultant green body was sintered at 1,080° C. in vacuum at 4×10−4 Torr for 2 hours. The resultant sintered body was heat-treated in an Ar gas atmosphere at 900° C. for 2 hours and then at 550° C. for 1 hour. The resultant polar-anisotropic ring magnet was measured with respect to a surface magnetic flux density distribution after working and magnetizing, and the measured waveform of the surface magnetic flux density distribution is shown in FIG. 6. As is clear from FIG. 6, a sine wave-matching rate was about 98% in this Example.\n\nCOMPARATIVE EXAMPLE 1\n\n[0067]A polar-anisotropic ring magnet with 8 poles was produced under the same conditions as in Example 1 except that an angle difference between the actual magnetization direction and the theoretical one exceeded ±2.7°, and measured with respect to a waveform of a surface magnetic flux density distribution. The measured waveform in Comparative Example 1 is shown in FIG. 6. A sine wave-matching rate was about 90% in Comparative Example 1.\n\nEXAMPLE 2\n\n[0068]A polar-anisotropic ring magnet with 8 poles was investigated with respect to a magnetization direction at an arbitrary phase angle by a magnetic field analysis. The coordinates of an analysis model are shown in FIG. 10. As shown in FIG. 10, a phase angle φ and a magnetization direction θ at an arbitrary position are expressed as angles from the X-axis in the analysis model. In the polar-anisotropic ring magnet with 8 poles, a magnetization direction at an N pole center 5 is along the X-axis, i.e., θ=0°. A magnetization direction at a middle position 6 (φ=22.5°) between N and S poles is perpendicular to the radial direction, i.e., θ=67.5°.\n\n[0069]As shown in FIG. 11(a), in a case where the magnetization direction θ increases or decreases by an equal angle as the phase angle φ changes from the magnetic pole center (phase angle φ=magnetization direction, θ=0°) to the middle position between the magnetic poles (φ=22.5°, θ=67.5°) at an equal pitch, the magnetization direction θ is expressed by a straight line (linear function) with a waveform distortion degree d of 1.0. On the other hand, in a case where the magneti', '发明领域 \n\n [0001] 极性各向异性环形磁体及其制造方法和设备,特别是涉及一种在安装到电动机中时基本上不产生齿槽转矩的极性各向异性烧结稀土环形磁体,方法和装置。 用于生产这种极性各向异性的烧结稀土环形磁体的设备。 \n\n 发明背景 \n\n [0002] 图1和图2所示的径向各向异性磁体和极性各向异性磁体如图2所示。  15( a )和 15 ( b )被称为永磁同步电动机的转子等中使用的磁体。 当安装在电动机中时,两种磁体都会产生齿槽转矩。 齿槽转矩取决于磁极的矩形和磁极之间的吸引力。 由于较大的齿槽转矩在电动机旋转时导致较大的振动和噪声,因此期望减小齿槽转矩。 已经进行了各种尝试来减小齿槽转矩。  (a)设计定子齿尖设计,(b)提供具有接近正弦波的磁化波形的磁体,(c)优化定子和转子上的磁极数,(d)偏斜或偏斜- 对转子进行磁化,以使其在旋转轴方向上平均磁化强度;(e)扩大磁极之间的间隙等。 \n\n [0003] 其中,提供具有接近正弦波的磁化波形的磁体的装置(b)可以在不降低其功率的情况下减小齿槽转矩。 由于极性各向异性环形磁体中相邻磁极之间的磁通呈弧形流动,因此表面磁通密度分布具有接近正弦波的波形,因此极性各向异性环形磁体优于径向各向异性磁体。 具有矩形波形的表面磁通密度分布的各向异性磁体。 另外,由于极性各向异性环形磁体的表面磁通密度可以是径向各向异性环形磁体的表面磁通密度的约1.5倍,因此极性各向异性环形磁体可以获得比径向各向异性环形磁体更高的功率。 磁铁。 \n\n [0004] 作为用于模制极性各向异性环形磁体的设备的示例,JP 2000-269062 A公开了一种用于在磁场模制步骤中使用的模制设备,该模制设备用于通过如下方法制造在其表面上具有多个磁极的各向异性环形磁体。 一种烧结方法,其包括圆柱形的非磁性模具和用于限定环形成型空间的柱状棒芯,所述成型模具具有n个凹槽以产生具有n个磁极的磁体,并接收用于施加磁场的线圈 在每个凹槽中,高磁导率构件被掩埋在模具的相邻凹槽之间。然而,该模制设备不能提供具有表面磁通密度分布足够接近正弦波的极性各向异性环形磁体。 \n\n [0005] 为了使极性各向异性环形磁体的表面磁通密度分布接近正弦波,即,使其具有期望的正弦波匹配率,应在磁场成型中适当地定向磁粉。 但是,JP 2000-269062 A完全没有教导磁粉应该在哪个方向上取向以使其表面磁通密度接近正弦波。 利用烧结变形等因素,在批量生产的磁体中,表面磁通密度分布的正弦波匹配率约为85%至90%。 \n\n 发明目的 \n\n [0006] 因此,本发明的目的是提供一种表面各向异性的环状磁极,其表面磁通密度分布具有稳定的正弦波匹配率,并且在安装到电动机中时基本上不产生齿槽转矩,还涉及一种方法和方法。 用于生产这种极性各向异性环形磁体的设备。 \n\n 发明内容 \n\n [0007] 为了制造具有高的正弦波匹配率的表面磁通密度分布的极性各向异性环形磁铁,需要在磁场成型中使磁粉的取向方向最优化。 例如,如JP 2000-269062 A所教导的,尽管已经设计了施加磁场的线圈和成型模具的设计以优化磁粉的取向方向,但是没有找到明确的优化标准,并且它们的设计已经 实际上是在反复试验的基础上进行的。 \n\n [0008] 近来,用于电磁场分析的技术已被广泛用于电动机的设计。 其中,有限元方法(FEM)很有用,因为它可以通过数字化网格建模对象的每个网格而无需使用偏微分方程等来提供现实的解决方案。就环形磁体的FEM设计而言, 尽管涉及磁化方向(用于优化磁化方向的磁粉的取向方向),但是在极性各向异性环形磁体中没有明确的判据,尽管在分段磁体和具有径向取向的环形磁体中相对容易。 \n\n [0009] 在图1所示的极性各向异性环形磁铁中,磁极的形状为:  15( b ),例如,磁粉应如何定向在某个位置根本不清楚 7  在磁极内部并在中间位置 8  在外围的相邻磁极之间。 因此,在各向异性各向异性环形磁铁中,磁粉应如何从S极定向到N极或从N极定向到S极尚不清楚。 \n\n [0010] 作为这种情况下的深入研究的结果,发明人通过分析由形成环形磁体的空间中的线圈产生的磁场的分布,发现当磁化方向以相等角度变化时 换而言之,如图4所示,当磁化方向在任意法线上相同而与径向位置无关时,磁极位置与其相邻位置之间的间距减小。 如图3所示,表面磁通密度分布为正弦波的形式。 基于该发现完成了本发明。 \n\n [0011] 因此,本发明的极性各向异性环形磁铁的磁化方向在各磁极位置处与法线一致,在相邻的磁极之间的各中间位置处与切线一致。 相邻元件之间的磁化方向是通过在磁极位置和与磁极位置相邻的中间位置之间以相等的角度间距划分而获得的。 \n\n [0012] 元件中的实际磁化方向与理论磁化方向之间的角度差优选在磁极之间的中心角的6%以内。 \n\n [0013] 极性各向异性环形磁体优选地具有在任何径向位置在其任意法线上基本恒定的磁化方向。 \n\n [0014] 极性各向异性环形磁体优选具有外径Do,内径Di和磁极数P,其满足由式Di≥Do(P-1.5π)/ P表示的条件。 \n\n [0015] 沿圆周方向的表面磁通密度分布的测量波形优选具有与具有相同周期和峰值的正弦波的匹配率在93%以上。 \n\n [0016] 本发明的极性各向异性环形磁体的制造方法包括在模制装入环形腔中的磁粉的过程中施加磁场,以使(a)磁粉在每个磁体处沿法线取向。 磁极位置和相邻磁极之间的每个中间位置处的切线,以及(b)各向异性磁极环形磁铁被划分为磁极位置和与磁相邻的中间位置之间的等角间距的元素 在磁极位置,相邻元件之间在磁化方向上的角度差基本恒定。 \n\n [0017] 在上述极性各向异性环形磁体的制造中使用的本发明的磁场成型设备包括:具有圆形横截面孔的成型模;以及具有圆形横截面孔的成型模。 圆柱状的棒芯同心地设置在模具的圆形横截面孔中,以形成环形腔。 在模具的内表面上开口的多个凹槽; 多个线圈设置在每个凹部中,多个线圈沿着腔对齐,并且中心角的比率为θ 1  由沿着每个凹槽中的空腔排列成中心角θ的多个线圈定义 2  相邻凹部中的线圈之间的间距为0.8至1.2。 该凹部优选在面向腔的一侧上扩大。 \n\n [0018] 在图1中部分地示出的极性各向异性环形磁体的示例中,磁极环 如图3所示,(a)磁化方向在磁极位置处与法线对准并且在N极和S极之间完全相反,而在相邻磁极之间的中间位置处沿切线方向,如 (b)当磁极位置和中间位置之间的区域以相等的角度间距划分为元素时,在磁极方向和中间位置之间的磁化方向上存在基本恒定的角度差 相邻的元素,如扇形虚线V中的箭头所示 2 。 每个元件中的实际磁化方向与理论磁化方向的偏差优选在磁极之间的中心角的6%以内。 \n\n [0019] 参照图6,如下定义“理论磁化方向”。  3,代表一个区域 17  从S极位置(22.5°) 5  到中间位置 6  在具有八个磁极的各向异性各向异性环形磁铁中被平均分为5个元素。 在每个元素P中 1 P 2 P 3 P 4  横切该区域的线所示 17  在S极旁边的虚线U中 5 ,磁化方向从S极以恒定的角度差连续变化。 即,磁化方向从S极成比例地变化 5  到中间位置 6 。 因此,磁化(取向)方向相继改变一个角度(13.5°),该角度是通过在S极的法线之间划分角度(在此示例中为-67.5°)而获得的 5  切线在中间位置 6  按元素数(5)。 在图1所示的例子中,  3,其中磁化方向W 0  N极的磁化方向为0°,元素数为10,磁化方向W 1  与N极相邻的元件中的磁化方向理论上为-13.5°,磁化方向W 2  在下一个元素中的理论值是-27.0°。 \n\n [0020] 理想情况下,实际磁化方向与理论磁化方向之间没有差异。 例如,由于在具有八个磁极的极性各向异性环形磁体中,相邻磁极之间的中心角为45°,因此实际磁化方向与理论磁化方向的允许角度偏差为45°×0.06 = 2.7°。 实际磁化方向W 1  因此可以在-13.5°±2.7°的范围内,并且实际磁化方向W 2  可以在-27.0°±2.7°的范围内。 在这些条件下,表面磁通密度分布的正弦波匹配率为93%以上。 \n\n [0021] 此外,如虚线V所示,本发明的极性各向异性环形磁体在任意径向上的任意法线上具有基本恒定的取向方向。 1 ,V 2  在图。  3.换句话说,因为在磁极之间存在具有相同曲率的弓形磁通线 11 a  和 11 b  在图。  15( b ),它们基本上可以由一条弓形曲线表示 9 。 如图1中的虚线所示,在具有多条曲率不同的磁通线的极性各向异性环形磁铁中,磁通线的磁通量为零。 然而,如图16所示,其表面磁通密度分布具有低正弦波匹配率。 即,除非在相邻磁极之间沿着相同曲率的弧定向,否则不能获得高的正弦波匹配率。 \n\n [0022] 即使在薄的极性各向异性环形磁体中也应满足该条件。 已经发现,即使在包括中心位置的区域中未连接相邻磁极之间的磁路, 10  如图 5( b ),即,即使磁通线从环形磁体的内表面向内突出,极性各向异性环形磁体也可以具有优异的正弦波匹配率。 \n\n [0023] 最好是表示磁通线的曲线的交点与中间位置 10  如图2所示,在相邻的磁极之间的环与环形磁铁的内表面接触。  5( a )或从环形磁铁的内表面伸出,如图2所示。  5( b )。 当极性各向异性环形磁体厚到具有如图1中的虚线所示的内表面时,则磁极各向异性的环形磁体的厚度减小。  5( a ),其磁性能几乎没有改善,仅导致重量和成本增加。 因此,很明显,具有如虚线所示的内表面的极性各向异性环形磁体比所需的厚度厚Wd。 极性各向异性环形磁体的内径Di可以由外径Do和磁极数P通过Di≥Do(P-1.5π)/ P来设计。 \n\n [0024] 将参照图6解释这种关系的原因。  4.分析表明,当磁体厚度与磁极之间的距离之比超过一定水平时,表面磁通密度的饱和率,即相对于饱和磁通密度的相对值(100%),实质上变得 不变。 在图 在图4中,横坐标轴表示环形磁体的径向厚度与半极间距离(从一个磁极到其相邻的中间位置的周长)的比率(%),而纵坐标轴表示磁极的饱和率。 当内径Di随外径Do固定而变化时,表面磁通密度(最大值的百分比)。 环形磁铁的厚度为(外径Do-内径Di)/ 2,半极间距离为(外径Do×π)/ 2(磁极数P)。 已经发现,当环形磁体的厚度与半极间距离的比率为150%以上时,磁通密度饱和。 不论外径和磁极数如何,峰值磁通密度都以约150%的比率饱和。 因此,通过使极性各向异性环形磁体更厚而发生的只是在内侧增加无用的部分,而不能提供改善的磁性能。 这将横坐标轴上的阈值设置为150%,从1.5>开始提供公式(1) (环形磁铁的厚度/半极间距离)。 \n\n [0025] 因为取向方向不会根据法线上的径向位置而变化,所以即使制造出外径与内径之比大的极性各向异性环形磁铁,正弦波匹配率也不会变化。 在其内侧切割成薄的极性各向异性环形磁体。 使极性各向异性环形磁体变薄以满足Di≥Do(P-1.5π)/ P的条件,使其特别适用于诸如要求轻量化和高速度的盘式电动机的应用。 \n\n [0026] 尽管在本发明中取向方向是通过利用磁性Karr效应的振动样品磁力计来测量的,但是它可以通过X射线衍射,Karr效应等,反射电子衍射,卢瑟福反面的磁畴结构的观察来测量。  -散射等 \n\n [0027] 关于用于提供本发明的极性各向异性环形磁体的组合物,R 2 Ť 14 诸如NdFeB等的B基磁体(R代表稀土元素,T代表过渡元素),RCo 5 —或R 2 有限公司 17 基磁铁,例如SmCo等,R 2 Ť 17 N-或RT 12 可以使用SmFeN等N基磁体,R 2 Ť 14 尽管也可以使用具有其他组成的磁体,但是B基烧结磁体是特别优选的。 \n\n 附图的简要说明 \n\n [0028] 图。 附图说明图1是表示本发明的极性各向异性环状磁铁的磁化方向的示意图。 \n\n [0029] 图。 图2是示意性地表示极性各向异性环状磁铁的制造工序的图。 \n\n [0030] 图。 图3是表示本发明的极性各向异性环状磁铁的取向方向的示意图。 \n\n [0031] 图。 图4是表示环形磁铁厚度与极间距离的一半之比与表面磁通密度的饱和率之间的关系的图。 \n\n [0032] 图。  5( a )是表示极性各向异性环形磁铁的一例中的磁通线与厚度的关系的示意图。 \n\n [0033] 图。  5( b 图2是表示各向异性各向异性环形磁铁的另一例的磁通线与厚度的关系的示意图。 \n\n [0034] 图。 图6是表示在实施例和比较例中测定的磁化波形的图。 \n\n [0035] 图。 图7是表示实施例1的极性各向异性环状磁铁的磁化方向的表面磁通密度分布的计算值和测定值的曲线图。 \n\n [0036] 图。 图8是用于说明表面磁通密度分布的正弦波匹配率的图。 \n\n [0037] 图。 图9是表示本发明的极性各向异性环形磁铁中的表面磁通密度分布的测定结果的曲线图。 \n\n [0038] 图。 图10是表示磁化方向和相位角的定义的图。 \n\n [0039] 图。  11( a )是示出磁化方向与相位角之间的关系的图。 \n\n [0040] 图。  11( b )是表示相角与表面磁通密度之间的关系的图。 \n\n [0041] 图。 图12是表示变形量与表面磁通密度分布的正弦波匹配率之间的关系的图。 \n\n [0042] 图。 图13是表示变形度与齿槽转矩的关系的图。 \n\n [0043] 图。 图14是表示厚度不同的极性各向异性环形磁铁中的磁极角与表面磁通密度的关系的图。 \n\n [0044] 图。  15( a )是示出径向各向异性环形磁体中的磁化方向的示意图; \n\n [0045] 图。  15( b )是表示极性各向异性环形磁铁的磁化方向的示意图。 \n\n [0046] 图。 图16是表示极性各向异性环形磁铁的磁化方向的一例的示意图。 \n\n [0047] 图。  17( a )是示出用于传统的极性各向异性环形磁体的磁场成型模具的一个示例的截面图; \n\n [0048] 图。  17( b 图1是表示本发明的极性各向异性环形磁铁的磁场成型用模具的一例的剖视图。 和 \n\n [0049] 图。  17( c )是示出比较例中的用于极性各向异性环形磁体的磁场成型模具的一个示例的截面图。 \n\n 具体实施方式 \n\n [0050] 图。 图2示意性地示出了极性各向异性的烧结稀土环形磁体的制造步骤。 尽管通常通过磁场成型步骤来确定烧结磁体中的磁化模式 1 ,其中将磁性粉末定向成型,然后进行烧结 2 ,一个工作步骤 3  和磁化步骤 4 ,磁场成型步骤中磁粉的取向 1  对于极性各向异性环形磁体来说,它非常重要,因为在磁化步骤中很难重新定向磁粉 4 。 \n\n [0051] 磁性粉末可以是例如Nd 2 铁 14 B基磁粉。 可以将其他稀土元素如Dy等添加到Nd中,可以将Co添加到Fe中,并且可以将除了B以外的准金属元素添加到B中。磁粉的粒度分布优选调整为大约3μm 至10μm。 \n\n [0052] 图。 图1示出了在具有八个磁极的极性各向异性环形磁体中从S极到N极的区域中,表面磁通密度分布与正弦波对准的磁化方向。 易磁化方向(取向方向)在S和N极位置处为径向(法线方向) 5 ,尽管彼此相反。 另一方面,取向方向在中间位置垂直于法线,即与切线对齐。 6  在S极和N极之间(磁极之间的中间位置)。 尽管可以在这些位置轻松设置磁化方向 5 , 6 ,如何在区域中设置 17 , 17  它们之间很重要。 发明人的分析表明,每个区域的磁化方向 17 , 17  可以通过划分磁极之间的区域来设置 5 , 6  元件以相等的角度间距,以相同的角度连续地增加或减小磁化方向。 \n\n [0053] 为了在表面磁通密度分布中实现93%以上的正弦波匹配率,实际磁化方向与理论磁化方向之间的角度差优选为磁极之间的中心角的6%以下。 为了实现98%以上的正弦波匹配率,角度差优选为3%以下,更优选为2%以下。 如图1所示。 参照图8,通过将测得的表面磁通密度分布的波形与具有相同周期和峰值的正弦波进行比较,来确定表面磁通密度分布的正弦波匹配率。 具体地,正弦波匹配率由(1-A)×100确定,其中,A是通过| Sa-Sb |除以得到的商。 通过Sb,Sa是测量波形的半波区域的面积,Sb是正弦波的半波区域的面积。 \n\n [0054] 相对于径向,如虚线V所示 1 ,V 2  在图。 如图3所示,优选的是,无论径向位置如何,磁化方向都基本相同。 尽管理想的是在任何径向位置实际磁化方向都与理论方向相同,但是它们之间的可接受角度差应在±2.5°之内,以获得93%或更高的正弦波匹配率,最好在±1°之内 。 当角度差在±0.5°以内时,可以实现95%以上的正弦波匹配率。 \n\n [0055] 图。 图7示出了在实施例1的极性各向异性环形磁铁中,计算出的表面磁通密度分布与测定值之间的关系。  7他们彼此之间非常吻合。 图。 图9示出了在实际的极性各向异性环形磁体的整个圆周上的表面磁通密度分布的测量结果。 因为法线上的磁化方向是相同的,而不管径向位置如何,所以可以在磁场沿厚度方向施加到环形磁体的中心部分的假设下进行分析。 \n\n [0056] 已经发现,磁场成型模具的结构对于生产具有满足本发明要求的磁化方向或取向方向的极性各向异性环形磁体是重要的。 通过比较图1和图2所示的磁场成型模具可以清楚地看出。  17( a ) 至 17 ( c )。 \n\n [0057] 具有图1所示的结构的磁场成型用模具具有:  17( a )(通常已使用)包括成型模具 21  由具有圆形横截面孔的磁性材料制成,柱状杆芯 22  同心地设置在成型模具的圆形横截面孔中 21 ,多个狭缝形凹槽 23  成型模具内表面上的开口 21 和非磁性套 24  设置在成型模具的内表面上 21  这样它覆盖了凹槽 23 。 多个线圈 25  在每个凹处收到 23 。 线圈 25  串联连接以产生如图所示的极性。 中心角θ 2  线圈之间 25  在相邻的凹处 23  足够大于圆心角θ 1  由线圈定义 25  在每个凹处 23 。 在这种情况下,线圈产生的磁场 25  在每个凹处 23  基本上是同心的,但是腔中的磁化方向 26  成型模具的 21  由于极性相反的相邻磁场几乎没有重叠,因此不能满足本发明的要求。 由图1所示的磁场成型模具形成的极性各向异性环形磁铁被形成为环状。  17( a )通常具有表面磁通密度分布,其正弦波匹配率约为85%至90%。 \n\n [0058] 具有图1所示的结构的磁场成型用模具具有:  17( b )适用于模制本发明的极性各向异性环形磁体。 该磁场成型模具的特征在于每个凹槽 23  在型腔的侧面扩展 26 ,使得多个线圈 25  沿型腔表面对齐 26 ; 中心角θ 1  由多个线圈定义 25  在每个凹处 23  基本上等于中心角θ 2  线圈之间 25  在相邻的凹处 23 。 磁场分析表明,在 1  几乎等于θ 2 ,由多个线圈产生的基本同心的磁场 25  在一个凹处 23  重叠多个线圈产生的极性相反的基本同心磁场 25  在相邻的凹处 23 因此,在磁极之间以大致圆形的磁场交替形成N极和S极。 因此,当以相等的角间距将磁极位置和与其相邻的中间位置之间的区域划分为元件时,相邻元件之间的磁化方向上的角度差基本恒定。 具有这样的磁化方向的极性各向异性环形磁铁具有正弦波匹配率极高的表面磁通密度分布。 \n\n [0059] 为了使每个元件中的实际磁化方向与理论磁化方向之间的角度差为磁极之间的中心角的6%或更小,即为了使正弦波匹配率为93%以上, 中心角θ 1  到中心角θ 2  优选为0.8至1.2。 中心角比θ 1  到中心角θ 2  优选为0.9〜1.1,更优选为0.95〜1.05。 \n\n [0060] 为了满足上述关于中心角θ的比的条件 1  到中心角θ 2  在具有8至16个磁极的极性各向异性环形磁铁中,特别是在需求量很大的情况下,线圈数 25  在每个凹部中沿着腔的内表面设置 23  优选为2〜10,更优选为3〜8。 25  是1,每个线圈的外径 25  太大而无法在型腔中有效产生磁场 26 。 另一方面,当上述线圈数 25  超过10,线圈之间的连接 25  太复杂了,构成线圈的电线 25  直径太小,无法承受大功率脉冲。 \n\n [0061] 如图1所示。  17( c ),每个休息时间 23  如此大以至于中心角θ 1  由多个线圈定义 25  在每个凹部中沿着腔的内表面设置 23  远大于中心角θ 2  线圈之间 25  在相邻的凹处 23 因此,所得到的极性各向异性环形磁体的磁化方向不满足本发明的要求,导致表面磁通密度分布的正弦波匹配率极度降低。 \n\n [0062] 通过磁场成型步骤获得的极性各向异性环形磁体在磁极位置处的易磁化方向与在磁极之间的中间位置处的垂直磁化方向之间的烧结收缩率相差近10%。 因此,极性各向异性环形磁体在磁极部分中凹陷并且在磁极之间的中间部分凸出,在烧结之后需要切割,并且在磁化步骤中不能保持成型取向。 因此,最好在考虑磁场各向异性的大小,材料和磁化程度等决定的各向异性磁环的变形程度的情况下,控制磁场成型中的取向。 \n\n [0063] 下面将参考实施例详细描述本发明,而不是要限制本发明。 \n\n 例1 \n\n [0064] 通过以下工序,制作出外径为32mm,内径为24mm,长度为25mm的8个磁极的极性各向异性环状磁铁。 首先,稀土磁体合金包括:20.0质量%的Nd,8.5质量%的Pr,4.5质量%的Dy,1.0质量%的B,2.0质量%的Co,0.1质量%的Ga, 然后,通过吸氢法使剩余量为Fe的0.15质量%的Cu脆化,然后用32目的筛子进行粗粉碎,分级,得到粒径为500μm以下的粗粉。 在V型混合器中,将200kg的粗粉与0.02质量%的石蜡混合,得到粗的原料粉。 将粗原料粉末用喷射式粉碎机在氧气浓度为0.001体积%的氮气流中粉碎,每30分钟测定一次平均粒径,得到平均粒径为5.0μm的成型用粉末。 减。 \n\n [0065] 使用具有θ的磁场成型模具 1  几乎等于θ 2  如图所示。  17( b ),在Ar气气氛中进行模制,同时施加通过考虑经验已知的烧结变形而确定的磁场,从而使实际磁化方向与理论磁化方向的角度偏差保持在±0.5°以内。 \n\n [0066] 将所得的生坯在真空中以4×10在1080℃下烧结。 −4  托2小时。 将所得的烧结体在Ar气气氛中在900℃下热处理2小时,然后在550℃下热处理1小时。 对于加工后磁化后的表面磁通密度分布,对所得到的极性各向异性环状磁体进行了测定,该表面磁通密度分布的测定波形如图6所示。 从图6清楚可见。 如图6所示,在该实施例中,正弦波匹配率约为98%。 \n\n 比较例1 \n\n [0067] 除了使实际磁化方向与理论磁化方向的角度差超过±2.7°以外,与实施例1同样地制作了8极的极性各向异性环状磁铁,并相对于表面磁通的波形进行了测定。 密度分布。 比较例1中的测量波形如图2所示。  6.在比较例1中,正弦波匹配率约为90%。 \n\n 例子2 \n\n [0068] 通过磁场分析,研究了在任意相位角下相对于磁化方向的8极极性各向异性环形磁体。 分析模型的坐标在图2中示出。 如图10所示。 在图10中,在分析模型中,任意位置的相角φ和磁化方向θ表示为与X轴的角度。  8极极性各向异性环形磁铁的磁化方向为N极中心 5  沿X轴,即θ= 0°。 中间位置的磁化方向 6  N极和S极之间的(φ= 22.5°)垂直于径向,即θ= 67.5°。 \n\n [0069] 如图1所示。  11( a ),当磁化方向θ随相位角φ从磁极中心(相位角φ=磁化方向,θ= 0°)改变到磁极之间的中间位置而以相同的角度增大或减小时 φ= 22.5°,θ= 67.5°),磁化方向θ由波形畸变度d为1.0的直线(线性函数)表示。 另一方面,在像径向各向异性磁铁那样,磁化方向在磁极中心缓慢变化而在磁极之间的中间位置迅速变化的情况下,磁化方向θ由具有波形畸变的曲线近似。  d为1.8(高级功能)。 波形畸变度d越大,在中间位置的磁化方向的变化越陡。 \n\n [0070] 为了详细研究表面磁通密度的波形,发明人分析了相角φ的哪个函数程度(失真度d)可以近似于图6所示的磁化方向。  11( a )。 \n\n [0071] 作为表面磁通量密度波形的电磁场分析的结果,发现当磁化方向θ以相等的角度(d = 1.0)增大或减小时,如图2所示,磁化方向θ增大。  11( b ),表面磁通密度分布非常接近正弦波。 畸变度d越大,表面磁通密度的峰值越低,产生类似于d = 1.8的曲线的方波。 \n\n [0072] 在图1和图2中还分别示出了在1.3和1.5的波形畸变度d下的磁场分析结果。  11( a )和 11 ( b )。 已经发现,在理想的极性各向异性环形磁体中,变形度d为1.0,而在理想的径向各向异性环形磁体中,变形度d为约2以上。 \n\n [0073] 图。 图12示出了用于展现极性各向异性环形磁体的表面磁通量密度的波形的上述​​两个指标之间的关系(便于磁场分析的畸变度d和容易测量的正弦波匹配率)。 由于诸如烧结变形等的生产问题,常规地大量生产的极性各向异性环形磁体的表面磁通密度具有大约1.3至1.5的畸变度和正弦波匹配率大约82至89%。 \n\n [0074] 通过对表面磁通密度的波形与齿槽转矩的关系进行分析,可知如图4所示,齿槽转矩以1.2以下的畸变度显着降低。  13.此时,正弦波匹配率为93%以上。 \n\n 实施例3 \n\n [0075] 研究极性各向异性环形磁体的厚度与表面磁通密度分布之间的关系的结果是,如图6所示,表面磁通密度随着厚度减小而减小。  14.然而,可以确定的是,即使厚度减小,正弦波匹配率也不会改变。 例如,尽管存在图1所示的极性各向异性环形磁体,  5( a )具有高的表面磁通密度,并且图1所示的极性各向异性环形磁体具有高的表面磁通密度。  5( b )具有低的表面磁通密度,它们之间的正弦波匹配率没有差异。 \n\n [0076] 即使外径为38mm且内径为15mm以下的厚的各向异性各向异性环形磁体也具有与外径和内径相同的极性各向异性环形磁体相同的表面磁通密度。  18毫米 因此,确认了在图2中示为宽度W的内表面部分被覆盖。  5( a )基本上没有改善极性各向异性环形磁体的磁性能。 因此,极性各向异性环形磁体优选地具有基本上没有宽度部分W的形状。 \n\n [0077] 尽管在上面的示例中已经说明了具有八个磁极的极性各向异性环形磁体,但是本发明不限于此,而是可以应用于具有四个或更多磁极的极性各向异性环形磁体。 本发明适合于生产具有8至16个磁极的高质量,极性各向异性的环形磁体,这是特别需要的。 \n\n [0078] 如以上详细描述的,本发明使得可以在磁场成型中使磁性粉末取向,使得极性各向异性环形磁体的表面磁通密度分布与正弦波匹配。 因为常规的环形磁体的厚度是凭经验确定的,所以没有办法找到环形磁体是否不必要地厚。 相反,本发明使得可以设计厚度不具有用于产生表面磁通量密度的无用部分的厚度的极性各向异性环形磁体,从而有利地减小了重量和成本,从而导致具有极小的齿槽转矩的轻型电动机。 比传统马达 此外,本发明可以提供具有高正弦波匹配率的极薄的极性各向异性环形磁体,其适用于硬盘驱动器等的高速电动机。');
INSERT INTO `os_patent_instruction_text` VALUES (12994, 22823, 'BACKGROUND OF THE INVENTION\n\n[0001]1. Field of the Invention\n\n[0002]The present invention generally relates to a method of making a magnet alloy by rapidly cooling and solidifying a molten alloy.\n\n[0003]Specifically, the present invention relates to a method of preparing a material alloy for nanocomposite magnets for use in various types of motors, meters, sensors and loudspeakers. More particularly, the present invention relates to a method of making a rapidly solidified alloy for use to produce a nanocomposite magnet in which soft magnetic phases such as iron-based borides and iron and a hard magnetic phase such as an R2Fe14B compound (where R is a rare-earth element) are magnetically coupled together. It should be noted, however, that the rapidly solidified alloy prepared by the method of the present invention can be used effectively not only in nanocomposite magnets but also in bonded magnets (including rubber magnets) and sintered magnets as well.\n\n[0004]The present invention further relates to a magnet powder obtained by pulverizing the rapidly solidified alloy and to a magnet body made of the magnet powder.\n\n[0005]2. Description of the Related Art\n\n[0006]A nanocomposite magnet, having a structure in which a hard magnetic phase such as R2Fe14B and soft magnetic phases such as Fe3B (including Fe3.5B) and α-Fe are magnetically coupled together via exchange interactions, is now under development as an R—Fe—B based magnet. A powder of a nanocomposite magnet is compacted into a predetermined shape with a resin binder, thereby forming an isotropic bonded magnet.\n\n[0007]In producing a nanocomposite magnet, a rapidly cooled and solidified alloy, having either an amorphous structure or at least a structure consisting mostly of amorphous phases (which will be referred to herein as a “rapidly solidified alloy”), is often used as a starting material thereof. When subjected to a heat treatment, this rapidly solidified alloy crystallizes and eventually becomes a permanent magnet material having a nanocomposite structure with an average crystal grain size of about 10−9 m to about 10−6 m.\n\n[0008]The structure of the heated and crystallized alloy heavily depends on the structure of the rapidly solidified alloy that is yet to be heated and crystallized. For that reason, to obtain a nanocomposite magnet having excellent magnetic properties, it is important how to define the conditions of rapidly cooling and solidifying a molten alloy because those conditions should determine the specific structure (e.g., the percentage of amorphous phases) of the resultant rapidly solidified alloy.\n\n[0009]A rapid cooling process to be performed with a machine such as that shown in FIG. 1 (i.e., a melt spinning machine) is known as a conventional method of preparing such a rapidly solidified alloy including a greater volume percentage of amorphous phases. In this process, a molten alloy is ejected out of a nozzle, having an orifice with an inside diameter of about 1 mm or less at the bottom, toward a rotating chill roller, and rapidly cooled and solidified by the roller, thereby obtaining a thin-strip amorphized solidified alloy.\n\n[0010]Methods of this type have been researched and reported by universities and organizations that are engaged in the study of magnetic materials. However, a machine for use in those research studies or reports is modeled just for experimental purposes so as to melt several grams to several hundreds of grams of alloy inside of a nozzle and eject it out of the nozzle. That is to say, a machine having such a low processing rate cannot mass-produce a material alloy for a nanocomposite magnet.\n\n[0011]Although not designed specially to make a magnet alloy, a machine including multiple nozzles to eject a molten alloy toward a chill roller is described in Japanese Laid-Open Publications No. 2-179803, No. 2-247304, No. 2-247305, No. 2-247306, No. 2-247307, No. 2-247308, No. 2-247309 and No. 2-247310, for example.\n\n[0012]In these methods, a molten alloy, which has been melted in a melting crucible, is teemed into a container having ejecting nozzles at the bottom, and then ejected out of the nozzles toward the surface of a rotating roller by applying a predetermined pressure onto the melt in the container (this method will be referred to herein as a “melt spinning process”). By ejecting the melt through the nozzles while applying a pressure thereto in this manner, a stream of the melt (or a melt flow) having a relatively high flow rate can be ejected substantially perpendicularly toward around the top of the rotating roller. The ejected melt forms a puddle (i.e., a melt puddle) on the surface of the chill roller that is rotating at a relatively high velocity (e.g., at a roller surface velocity of about 20 m/s or more). A portion of this puddle, which is in contact with the roller, is rapidly cooled and solidified, thereby forming a thin-strip rapidly solidified alloy.\n\n[0013]In the melt spinning process described above, the molten alloy and the rotating roller have just a short contact length. Accordingly, the melt cannot be rapidly cooled and solidified fully on the rotating roller, and the alloy at a high temperature (e.g., about 700° C. to about 900° C.) is cooled and solidified efficiently enough due to its small thickness (typically about 40 μm or less) even after having left the rotating roller and while traveling in the air. In the melt spinning process, the cooling process is carried out in this manner, thereby amorphizing any of various types of alloys.\n\n[0014]The applicant of the present application also disclosed a method of producing a nanocomposite magnet by a strip casting process in Japanese Patent No. 3297676 and PCT International Publication WO 02/30595 A1. Furthermore, known strip casting machines and processes using a tundish are disclosed in Japanese Laid-Open Publications No. 11-333549 and No. 2000-79451, for example.\n\n[0015]In the melt spinning process, however, the molten alloy is ejected through the nozzle with a small inside diameter, and receives a strong resistance from the nozzle. Thus, it is necessary to apply a sufficiently high pressure to the molten alloy constantly. Such a high pressure is normally applied by adjusting the weight (and the back pressure if necessary) of the melt itself. Accordingly, a rather heavy melt is always reserved to substantially the same level above the nozzle.\n\n[0016]Furthermore, the melt is ejected through the nozzle with such a small inside diameter. Accordingly, once a portion of the nozzle has been clogged up with the melt, the melt starts to receive an even higher resistance from the nozzle, thus possibly varying the ejecting rate of the melt.\n\n[0017]As a result, in the conventional melt spinning process, if one tries to raise the productivity of the rapidly solidified alloy by increasing the melt feeding rate to about 1.5 kg/min or more, for example, then it becomes hard to control the melt feeding rate at a constant value. Consequently, the rapid cooling rate likely varies considerably which affects the resultant magnetic properties significantly.\n\n[0018]Also, in the melt spinning process, a rapidly solidified alloy including a greater volume percentage of amorphous phases is obtained by ejecting a small amount of melt onto a chill roller that rotates at a relatively high velocity (e.g., at a peripheral velocity of about 20 m/s or more). Thus, the resultant thin-strip rapidly solidified alloy typically has a thickness of about 40 μm or less. It is difficult to collect a thin-strip alloy having such a small thickness so as to efficiently increase the tap density thereof by a sufficient amount. Furthermore, powder particles, obtained by pulverizing such a rapidly solidified alloy with a thickness of about 40 μm or less, have a flat shape. Accordingly, those powder particles exhibit a poor flowability or loadability and result in a low magnet powder fill density in a compaction process, thus often decreasing the magnet powder percentage in the resultant bonded magnet.\n\n[0019]On the other hand, a strip casting process is also known as another method of preparing a rapidly solidified alloy as described above. In the strip casting process, a molten alloy is supplied from a melting crucible onto a shoot (or tundish) and then brought into contact with a chill roller, thereby making a rapidly solidified alloy.\n\n[0020]Hereinafter, the strip caster and strip casting method as disclosed in Japanese Patent No. 3297676 and PCT International Publication WO 02/30595 A1 will be described with reference to FIG. 2.\n\n[0021]As shown in FIG. 2, the strip caster includes a melting crucible 11, a shoot (i.e., a guide member) 14, and a chill roller 13. The melting crucible 11 is provided to melt a material alloy and store the molten alloy therein. The shoot 14 receives the molten alloy 12 that has been teemed from the melting crucible 11 and guides the molten alloy 12 to a predetermined location. Then, the molten alloy 12 is teemed from the end of the shoot 14 onto the chill roller 13 and rapidly cooled and solidified by the chill roller 13.\n\n[0022]The shoot 14 includes a melt guide surface, which defines a tilt angle β with respect to a horizontal plane, and controls the flow velocity of the melt running down on the guide surface and rectifies the melt flow, thereby feeding the melt onto the chill roller 13 constantly and continuously.\n\n[0023]The molten alloy 12, which has come into contact with the outer circumference of the chill roller 13, moves along the circumference of the roller 13 so as to be dragged by the rotating chill roller 13 and cooled in the meantime. Then, the resultant thin-strip rapidly solidified alloy 15 leaves the chill roller 13. In the strip casting process, the angle α, which is defined by a line that connects a point of contact between the molten alloy 12 and the chill roller 13 (i.e., the location of the melt puddle) to the axis of rotation of the chill roller 13 with respect to a vertical plane, is an important parameter. Suppose the angle α is defined to be positive in the direction opposite to the rotational direction of the chill roller 13. In that case, the greater the angle α, the longer the length of contact portion between the molten alloy 12 and the chill roller 13. In a melt spinning process, the chill roller 13 normally has a relatively high rotational peripheral velocity. Accordingly, unless this angle α is defined substantially equal to zero degrees, the molten alloy 12 is easily splashed off by the rotating chill roller 13. For that reason, in a melt spinning process, the angle α is normally approximately zero degrees and the contact portion between the melt and the chill roller is usually relatively short. In contrast, in the strip casting process, the angle α may be relatively large, the contact portion between the molten alloy and the outer circumference of the roller may be relatively long as measured in the roller circumferential direction, and the molten alloy can be cooled almost completely while on the roller.\n\n[0024]As described above, the conventional strip casting process uses no ejecting nozzle unlike the melt spinning process but feeds the molten alloy 12 continuously onto the rotating roller 13 by way of the shoot 14. Thus, the strip casting process is effective for mass production and can reduce the manufacturing cost.\n\n[0025]In such a strip casting process, however, the molten alloy being fed from the guide member onto the chill roller has a small kinetic momentum. Accordingly, if the chill roller is rotated at a relatively high velocity, then the degree of contact between the molten alloy and the surface of the chill roller will be too low to form the melt puddle constantly on the surface of the chill roller and to obtain a thin-strip rapidly solidified alloy with a uniform thickness. Thus, even if one tries to make a rapidly solidified alloy having a nanocrystalline structure for a nanocomposite magnet by using the conventional strip caster, the resultant thin-strip rapidly solidified alloy will have non-uniform thicknesses and structure. Consequently, it has been difficult to produce an actually usable rapidly solidified alloy constantly by the conventional strip casting process.\n\n[0026]On the other hand, when a strip caster including a tundish as disclosed in Japanese Laid-Open Publications No. 11-333549 and No. 2000-79451 is used, the melt flowing on the tundish has a low flow velocity, and the resultant rapid cooling rate tends to be low. Thus, such a machine has been regarded as ineffective for making a rapidly solidified alloy for a nanocomposite magnet. The reason is as follows. Specifically, if the rapid cooling rate is low, an alloy including a lot of crystal structures with a relatively large grain size is formed easily. Also, the crystal grains of soft magnetic phases such as an α-Fe phase likely have such excessive grain sizes so as to significantly deteriorate the magnetic properties in many cases.\n\n[0027]For that reason, the strip caster as disclosed in Japanese Laid-Open Publications No. 11-333549 and No. 2000-79451 is often used to make completely crystallized ingots of a metal. A rapidly solidified alloy obtained in this manner is normally used as a material alloy for a sintered magnet including an R2Fe14B phase as its main phase, and cannot be used as a material alloy for a nanocomposite magnet in which hard and soft magnetic phases of very small sizes are distributed uniformly in the same metal structure.\n\nSUMMARY OF THE INVENTION\n\n[0028]In order to overcome the problems described above, preferred embodiments of the present invention provide a method and apparatus for making a rapidly solidified alloy, exhibiting excellent magnetic properties, for a nanocomposite magnet constantly and at a mass producible level, and also provide a method and apparatus for making a rapidly solidified alloy with excellent magnetic properties for other types of magnets.\n\n[0029]A method of making a rapidly solidified alloy for a nanocomposite magnet according to a preferred embodiment of the present invention preferably includes the step of preparing a melt of an alloy having a composition represented by the general formula: (Fe1-mTm)100-x-y-zQxRyMz, where T is at least one element selected from the group consisting of Co and Ni; Q is at least one element selected from the group consisting of B and C and always includes B; R is at least one rare-earth element; and M is at least one metal element selected from the group consisting of Al, Si, Ti, V, Cr, Mn, Cu, Zn, Ga, Zr, Nb, Mo, Ag, Hf, Ta, W, Pt, Au and Pb. The mole fractions x, y, z and m preferably satisfy the inequalities of: 10 at %≦x≦35 at %; 2 at %≦y≦10 at %; 0 at %≦z≦10 at %; and 0≦m≦0.5, respectively. The method preferably further includes the step of forming the rapidly solidified alloy by bringing the melt into contact with the surface of a rotating chill roller. In this method, the step of forming the rapidly solidified alloy preferably includes the step of teeming the melt onto a guide member, of which the guide surface defines a tilt angle with respect to a horizontal plane, and then feeding the melt, running down on the guide surface, through at least one tubular hole onto a contact area on the surface of the chill roller.\n\n[0030]In one preferred embodiment of the present invention, the step of forming the rapidly solidified alloy preferably includes the step of arranging the guide member such that the guide surface thereof defines a tilt angle of about 5 degrees to about 70 degrees with respect to the horizontal plane.\n\n[0031]In another preferred embodiment, the step of forming the rapidly solidified alloy preferably includes the step of arranging the guide member such that an angle α of about 0 degrees to about 80 degrees is defined in a direction opposite to a rotating direction of the chill roller between a vertical plane and a line that connects together a point on the surface of the chill roller, at which the melt contacts with the chill roller for the first time, and the axis of rotation of the chill roller.\n\n[0032]In still another preferred embodiment, the step of forming the rapidly solidified alloy preferably includes the step of splitting the melt into a number of melt flows by way of a plurality of tubular holes and then bringing the melt flows into contact with the chill roller.\n\n[0033]In yet another preferred embodiment, the step of forming the rapidly solidified alloy preferably includes the step of providing the guide member of which the tubular hole(s) has an opening area of about 0.02 cm2 to about 0.5 cm2.\n\n[0034]In yet another preferred embodiment, the step of forming the rapidly solidified alloy preferably includes the step of providing the guide member of which the tubular hole(s) has a length of about 0.5 mm to about 50 mm.\n\n[0035]In yet another preferred embodiment, the step of forming the rapidly solidified alloy preferably includes the step of arranging the guide member such that a distance of about 0.3 mm to about 50 mm is provided between the end of the tubular hole(s) and the surface of the chill roller.\n\n[0036]In yet another preferred embodiment, the step of forming the rapidly solidified alloy preferably includes the step of arranging the guide member such that an angle γ of about −20 degrees to about 40 degrees is defined between a flowing direction of the melt that has just been emitted from the tubular hole and a line that connects together the center of an inlet opening of the tubular hole and the axis of rotation of the chill roller. In this case, the angle γ is preferably positive if the melt flowing direction is opposite to the rotating direction of the chill roller and is preferably negative if the melt flowing direction is identical to the rotating direction of the chill roller.\n\n[0037]In yet another preferred embodiment, the step of forming the rapidly solidified alloy preferably includes the step of providing the guide member having a structure that supports a member including the tubular hole in an attachable and removable state.\n\n[0038]In yet another preferred embodiment, the step of forming the rapidly solidified alloy preferably includes the step of obtaining a rapidly solidified alloy, having an average thickness of more than about 50 μm to about 150 μm with a standard deviation of at most about 10 μm, by teeming the melt onto the guide surface at a rate of at least about 1.5 kg/min and then allowing the melt to run down on the guide surface with the upper surface of the melt exposed to an atmosphere.\n\n[0039]In this particular preferred embodiment, the step of forming the rapidly solidified alloy preferably includes the step of bringing the melt into contact with the surface of the chill roller within a reduced pressure atmospheric gas.\n\n[0040]More specifically, the step of bringing the melt into contact with the chill roller preferably includes the step of controlling the pressure of the atmospheric gas at about 0.13 kPa to about 100 kPa.\n\n[0041]A method of making a nanocomposite magnet powder according to another preferred embodiment of the present invention preferably includes the steps of preparing the rapidly solidified alloy for a nanocomposite magnet by the method according to any of the preferred embodiments of the present invention described above, and pulverizing the rapidly solidified alloy.\n\n[0042]In one preferred embodiment, the method preferably further includes the step of conducting a heat treatment process for crystallization purposes before and/or after the step of pulverizing the rapidly solidified alloy is performed.\n\n[0043]A method for producing a nanocomposite magnet according to still another preferred embodiment of the present invention preferably includes the steps of preparing a nanocomposite magnet powder by the method according to any of the preferred embodiments of the present invention described above, and compacting the nanocomposite magnet powder into a magnet shape.\n\n[0044]A shoot assembly according to yet another preferred embodiment of the present invention preferably receives a melt of an alloy and feeds the melt onto a chill roller of a melt quenching machine. The shoot assembly preferably includes a guide surface, which is made of a material having a melting point that is higher than the temperature of the melt and which defines a tilt angle with respect to a horizontal plane. The shoot assembly preferably further includes a teeming member having at least one tubular hole, which passes the melt that is running down on the guide surface. The teeming member is preferably attachable to, and removable from, the shoot assembly.\n\n[0045]A teeming member according to yet another preferred embodiment of the present invention is preferably secured, in a removable state, to the shoot assembly according to a preferred embodiment of the present invention and preferably has at least one tubular hole that passes the melt running down on the guide surface of the shoot assembly.\n\n[0046]A melt quenching machine according to yet another preferred embodiment of the present invention preferably includes a chill roller and a shoot assembly, which receives a melt of an alloy and feeds the melt onto the chill roller. The shoot assembly preferably includes a guide surface, which is made of a material having a melting point that is higher than the temperature of the melt and which defines a tilt angle with respect to a horizontal plane, and a teeming member having at least one tubular hole, which passes the melt that is running down on the guide surface. A distance of about 1 mm to about 50 mm is preferably provided between the end of the tubular hole and the surface of the chill roller.\n\n[0047]In one preferred embodiment of the present invention, the teeming member is preferably attachable to, and removable from, the shoot assembly.\n\n[0048]A method of making a rapidly solidified alloy for a permanent magnet according to yet another preferred embodiment of the present invention preferably includes the steps of preparing a melt of an alloy, and forming the rapidly solidified alloy by bringing the melt into contact with the surface of a rotating chill roller. The step of forming the rapidly solidified alloy preferably includes the step of teeming the melt onto a guide member, of which the guide surface defines a tilt angle with respect to a horizontal plane, and then feeding the melt, running down on the guide surface, through at least one tubular hole onto a contact area on the surface of the chill roller. The step of forming the rapidly solidified alloy preferably includes the step of arranging the guide member such that a distance of about 1 mm to about 50 mm is provided between the end of the at least one tubular hole and the surface of the chill roller.\n\n[0049]In one preferred embodiment, the step of forming the rapidly solidified alloy preferably includes the step of arranging the guide member such that the guide surface thereof defines a tilt angle of about 5 degrees to about 70 degrees with respect to the horizontal plane.\n\n[0050]In another preferred embodiment, the step of forming the rapidly solidified alloy preferably includes the step of arranging the guide member such that an angle α of about 5 degrees to about 80 degrees is defined in a direction opposite to a rotating direction of the chill roller between a vertical plane and a line that connects together a point on the surface of the chill roller, at which the melt contacts with the chill roller for the first time, and the axis of rotation of the chill roller.\n\n[0051]In still another preferred embodiment, the step of forming the rapidly solidified alloy preferably includes the step of splitting the melt into a number of melt flows by way of a plurality of tubular holes and then bringing the melt flows into contact with the chill roller.\n\n[0052]In yet another preferred embodiment, the step of forming the rapidly solidified alloy preferably includes the step of providing the guide member of which the tubular hole(s) has an opening area of about 0.03 cm2 to about 0.6 cm2.\n\n[0053]In yet another preferred embodiment, the step of forming the rapidly solidified alloy preferably includes the step of providing the guide member of which the tubular hole(s) has a length of about 5 mm to about 50 mm.\n\n[0054]In yet another preferred embodiment, the step of forming the rapidly solidified alloy preferably includes the step of rapidly cooling and solidifying the surface of the melt flow that has gone out of the tubular hole, thereby making a tubular member from the melt flow and extending an effective length of the tubular hole to about 10 mm or more.\n\n[0055]In yet another preferred embodiment, the step of forming the rapidly solidified alloy preferably includes the step of allowing the melt to run down on the guide surface with the upper surface of the melt being exposed to an atmosphere and filling the tubular hole with the melt flow.\n\n[0056]In this particular preferred embodiment, the step of forming the rapidly solidified alloy preferably includes the step of obtaining a rapidly solidified alloy, having an average thickness of more than about 50 μm to about 150 μm with a standard deviation of at most about 10 μm, by teeming the melt onto the guide surface at a rate of at least about 1.5 kg/min.\n\n[0057]In yet another preferred embodiment, the step of forming the rapidly solidified alloy preferably includes the step of bringing the melt into contact with the surface of the chill roller within a reduced pressure atmospheric gas while substantially equalizing the pressure of the atmospheric gas on the surface of the melt running down on the guide surface with that of the atmospheric gas on the surface of the melt that has gone out of the tubular hole.\n\n[0058]A method of making a magnet powder according to yet another preferred embodiment of the present invention preferably includes the steps of preparing the rapidly solidified alloy for a magnet by the method according to any of the preferred embodiments of the present invention described above, and pulverizing the rapidly solidified alloy.\n\n[0059]In one preferred embodiment of the present invention, the method preferably further includes the step of conducting a heat treatment process for crystallization purposes before and/or after the step of pulverizing the rapidly solidified alloy is performed.\n\n[0060]A method for producing a magnet according to yet another preferred embodiment of the present invention preferably includes the steps of preparing a magnet powder by the method according to the preferred embodiment of the present invention described above, and compacting the magnet powder to obtain a bonded magnet.\n\n[0061]A method for producing a magnet according to yet another preferred embodiment of the present invention preferably includes the steps of preparing a magnet powder by the method according to the preferred embodiment of the present invention described above, and sintering the magnet powder to obtain a sintered magnet.\n\n[0062]Other features, elements, processes, steps, characteristics and advantages of the present invention will become more apparent from the following detailed description of preferred embodiments of the present invention with reference to the attached drawings.\n\nBRIEF DESCRIPTION OF THE DRAWINGS\n\n[0063]FIG. 1 is a schematic side view illustrating an arrangement for a conventional melt spinning machine.\n\n[0064]FIG. 2 is a schematic cross-sectional view illustrating an arrangement for a conventional strip caster.\n\n[0065]FIG. 3 is a schematic cross-sectional view illustrating an arrangement for a melt quenching machine for use in various preferred embodiments of the present invention.\n\n[0066]FIGS. 4A and 4B are respectively a perspective view and a cross-sectional view illustrating a shoot which may be used effectively in the machine shown in FIG. 3.\n\n[0067]FIG. 4C is a cross-sectional view illustrating an alternative shoot for use in another preferred embodiment of the present invention.\n\n[0068]FIG. 5 is a schematic cross-sectional view showing the details of a tubular hole provided for the shoot shown in FIG. 3.\n\n[0069]FIG. 6 is a graph showing the thickness distributions of thin-strip rapidly solidified alloys for a specific example of a preferred embodiment of the present invention and a comparative example.\n\nDETAILED DESCRIPTION OF PREFERRED EMBODIMENTS\n\n[0070]Hereinafter, preferred embodiments of a method for making a rapidly solidified alloy for a nanocomposite magnet according to the present invention will be described.\n\n[0071]A rapidly solidified alloy for a nanocomposite magnet to be obtained by a method according to a preferred embodiment of the present invention preferably has a composition represented by the general formula: (Fe1-mTm)100-x-y-zQxRyMz, where T is at least one element selected from the group consisting of Co and Ni; Q is at least one element selected from the group consisting of B and C and always includes B; R is at least one rare-earth element; and M is at least one metal element selected from the group consisting of Al, Si, Ti, V, Cr, Mn, Cu, Zn, Ga, Zr, Nb, Mo, Ag, Hf, Ta, W, Pt, Au and Pb. The mole fractions x, y, z and m preferably satisfy the inequalities of: 10 at %≦x≦35 at %; 2 at %≦y≦10 at %; 0 at %≦z≦10 at %; and 0≦m≦0.5, respectively.\n\n[0072]In a preferred embodiment of the present invention, a melt of the alloy having the composition described above is brought into contact with, and rapidly cooled and solidified by, the surface of a rotating chill roller. In this rapid cooling process step, a guide member, of which the guide surface defines a tilt angle with respect to a horizontal plane, is used, and the melt is teemed onto the guide member. Then, the melt, running down on the guide surface, is fed onto the chill roller by way of at least one tubular hole.\n\n[0073]In such a preferred embodiment, the melt, which has been teemed onto the tilted guide surface of the guide member, is rectified appropriately while running down on the guide surface. Then, the rectified melt increases its flow velocity due to a throttling effect while passing through the tubular hole. However, the melt is further rectified while passing through the tubular hole, and then reaches the surface of the chill roller. The melt, which has been emitted from the tubular hole, collides against the surface of the chill roller with a greater kinetic momentum than the kinetic momentum of the melt running down on the guide surface. Accordingly, the degree of contact between the melt and the roller surface increases, thus realizing uniform cooling.\n\n[0074]In this manner, according to this preferred embodiment of the present invention, the melt can collide against the chill roller at a melt ejecting rate which is almost comparable to that of the conventional melt spinning machine. Thus, even if the chill roller is rotating at a relatively high peripheral velocity, a rather big melt puddle can be formed on the chill roller constantly. As a result, a thin-strip rapidly solidified alloy with a uniform thickness can be obtained at a constant cooling rate.\n\n[0075]It should be noted that the properties of a nanocomposite magnet to be obtained by thermally treating the rapidly solidified alloy are very sensitive to the microstructure of the rapidly solidified alloy yet to be heated. Accordingly, if the rapid cooling conditions change, then the rapidly solidified alloy may have a non-uniform structure, and the resultant magnetic properties may be affected. More specifically, even if the peripheral velocity of the rotating chill roller and the melt feeding rate are kept constant, a portion of the rapidly solidified alloy may still have been cooled at an abnormally low rate. Then, the α-Fe phase with an excessively large grain size may be nucleated in that portion, thus possibly deteriorating the resultant magnetic properties.\n\n[0076]Also, the average thickness of the thin-strip rapidly solidified alloy does affect the shape of powder particles to be obtained by pulverizing the thin-strip rapidly solidified alloy. Specifically, the thinner the rapidly solidified alloy, the flatter the powder particles. Then, such powder particles will have decreased flowability and loadability, and the resultant green density should decrease, too. On the other hand, if the rapidly solidified alloy prepared is relatively thick, then the powder particles will have an isometric shape and exhibit an increased flowability or loadability. Thus, such a powder is easier to compact in', '发明背景 \n\n [0001] 1.发明领域 \n\n [0002] 本发明总体上涉及一种通过快速冷却并固化熔融合金来制造磁体合金的方法。 \n\n [0003] 具体地,本发明涉及一种制备用于各种类型的电动机,仪表,传感器和扬声器的纳米复合磁体的材料合金的方法。 更具体地,本发明涉及一种用于制造纳米复合磁体的快速凝固的合金的方法,其中,软磁性相例如铁基硼化物和铁,以及硬磁性相例如R。 2 铁 14 B化合物(R为稀土元素)磁耦合在一起。 然而,应当指出,通过本发明的方法制备的快速凝固的合金不仅可以有效地用于纳米复合磁体中,而且还可以有效地用于粘结磁体(包括橡胶磁体)和烧结磁体中。 \n\n [0004] 本发明还涉及通过将快速凝固的合金粉碎而获得的磁体粉末以及由该磁体粉末制成的磁体。 \n\n [0005] 2.相关技术的描述 \n\n [0006] 纳米复合磁体,具有其中诸如R的硬磁相的结构 2 铁 14 硼和软磁性相,如铁 3 B(含铁 3.5 B)和α-Fe通过交换相互作用磁耦合在一起,目前正在开发为R-Fe-B基磁体。 用树脂粘合剂将纳米复合磁体的粉末压制成预定形状,从而形成各向同性的粘结磁体。 \n\n [0007] 在生产纳米复合磁体时,通常将具有非晶态结构或至少具有主要由非晶态相组成的结构的快速冷却且凝固的合金(在本文中称为“快速凝固合金”)作为起始材料。 其材料。 当进行热处理时,该快速凝固的合金结晶并最终成为具有纳米复合结构且平均晶粒尺寸约为10的永磁材料。 −9 米至约10  -6 米 \n\n [0008] 加热和结晶的合金的结构在很大程度上取决于尚未被加热和结晶的快速凝固的合金的结构。 因此,为了获得具有优异磁性能的纳米复合磁体,重要的是如何确定快速冷却和凝固熔融合金的条件,因为这些条件应决定所得合金的特定结构(例如非晶相的百分比)。 快速凝固的合金。 \n\n [0009] 用诸如图1中所示的机器执行的快速冷却过程被执行。 众所周知,制备这种快速凝固的合金的常规方法是用图1所示的熔体纺丝机(即熔体纺丝机)制成的,该合金包括较大体积百分比的非晶相。 在该过程中,将熔融合金从喷嘴的底部喷出,该喷嘴的孔的底部的内径约为1mm或更小,朝向旋转的冷却辊,并由该辊快速冷却并固化,从而获得薄的 带非晶化凝固合金。 \n\n [0010] 从事磁性材料研究的大学和组织已经研究和报道了这种类型的方法。 但是,用于这些研究或报告的机器只是为了实验目的而建模,以便在喷嘴内部熔化几克到几百克合金并将其从喷嘴中弹出。 也就是说,具有如此低的加工速度的机器不能大量生产用于纳米复合磁体的材料合金。 \n\n [0011] 在日本特开平2-179803号,第2-247304号,第2-247305号, 例如,第2-247306号,第2-247307号,第2-247308号,第2-247309号和第2-247310号。 \n\n [0012] 在这些方法中,将已经在熔融坩埚中熔融的熔融合金浸入底部具有喷射喷嘴的容器中,然后通过将预定压力施加到容器上而朝着旋转辊的表面从喷嘴中喷射出。 在容器中熔化(该方法在本文中称为“熔化纺丝工艺”)。 通过以这种方式在向喷嘴施加压力的同时通过喷嘴喷射熔体,具有相对较高流速的熔体流(或熔体流)可以大致垂直地朝向旋转辊的顶部喷射。 排出的熔体在以相对较高的速度(例如,以约20m / s或更高的辊表面速度)旋转的激冷辊的表面上形成熔池(即熔池)。 与辊接触的该熔池的一部分被快速冷却并固化,从而形成薄带快速固化的合金。 \n\n [0013] 在上述的熔融纺丝工艺中,熔融合金和旋转辊的接触长度短。 因此,熔体不能在旋转辊上被快速冷却并完全固化,并且由于其厚度小(例如,大约700℃至大约900℃),所以高温下的合金被充分有效地冷却和固化。 通常在离开旋转辊后并在空中行驶时,通常约为40μm或更小)。 在熔融纺丝工艺中,以这种方式进行冷却工艺,从而使各种合金中的任何一种非晶化。 \n\n [0014] 本申请的申请人还在日本专利第3297676号和PCT国际公开WO 02/30595 A1中公开了一种通过带式浇铸工艺生产纳米复合磁体的方法。 此外,例如,在日本特开平11-333549号公报和2000-79451号公报中公开了使用中间包的带钢连铸机和方法。 \n\n [0015] 然而,在熔融纺丝过程中,熔融合金通过具有较小内径的喷嘴排出,并受到来自喷嘴的强阻力。 因此,需要对熔融合金恒定地施加足够高的压力。 通常通过调节熔体本身的重量(和背压,如果需要)来施加这样的高压。 因此,相当重的熔体总是保留在喷嘴上方基本相同的高度。 \n\n [0016] 此外,熔体通过喷嘴以如此小的内径喷射。 因此,一旦喷嘴的一部分被熔体堵塞,熔体开始从喷嘴接收甚至更高的阻力,从而可能改变熔体的喷射速率。 \n\n [0017] 结果,在常规的熔体纺丝工艺中,如果试图通过例如将熔体进料速率提高至约1.5kg / min或更高来提高快速凝固合金的生产率,则难以控制熔体进料。 速率保持恒定。 因此,快速冷却速度可能会发生很大变化,从而显着影响最终的磁性能。 \n\n [0018] 另外,在熔体纺丝工艺中,通过将少量的熔体喷射到以相对较高的速度(例如,以大约20的圆周速度旋转)的冷却辊上,获得包括较大体积百分比的非晶相的快速凝固的合金。  m / s或更高)。 因此,所得的薄带快速凝固合金通常具有约40μm或更小的厚度。 难以收集具有如此小的厚度的薄带合金以有效地将其振实密度充分地增加。 此外,通过将厚度为约40μm或更小的这种快速凝固的合金粉碎而获得的粉末颗粒具有扁平形状。 因此,那些粉末颗粒表现出差的流动性或可装载性,并且在压制过程中导致低的磁体粉末填充密度,因此经常降低所得粘结磁体中的磁体粉末百分比。 \n\n [0019] 另一方面,如上所述,带钢铸造法也是已知的另一种制备快速凝固合金的方法。 在薄带连铸工艺中,将熔融合金从熔融坩埚供应到枝条(或中间包)上,然后与冷却辊接触,从而制得快速凝固的合金。 \n\n [0020] 在下文中,将参考图2描述如日本专利No.3297676和PCT国际公开WO 02/30595 A1中公开的带材连铸机和带材连铸方法。  2。 \n\n [0021] 如图1所示。  2,带材连铸机包括一个坩埚 11 ,新芽(即引导成员) 14 和冷却辊 13 。 熔化的坩埚 11  提供有用于熔化材料合金并将熔化的合金存储在其中的装置。 拍摄 14  接收熔融合金 12  从熔化的坩埚里塞满的 11  并引导熔融合金 12  到预定位置。 然后,熔融合金 12  从拍摄结束就充满了 14  放在冷却辊上 13  并通过冷却辊快速冷却并固化 13 。 \n\n [0022] 拍摄 14  包括熔体引导表面,该熔体引导表面相对于水平面限定倾斜角β,并控制在引导表面上向下流动的熔体的流速并校正熔体流动,从而将熔体送入冷却辊 13  不断不断 \n\n [0023] 熔融合金 12 ,它已经与冷却辊的外周接触 13 ,沿着滚子的圆周移动 13  以便被旋转的冷却辊拖动 13  同时冷却。 然后,所得的薄带快速凝固合金 15  离开冷却辊 13 。 在带钢铸造工艺中,角度α由连接熔融合金之间的接触点的线定义 12  和冷却辊 13  (即熔池的位置)相对于冷却辊的旋转轴 13  关于垂直平面,是重要的参数。 假设角度α在与冷却辊的旋转方向相反的方向上为正 13 。 在这种情况下,角度α越大,熔融合金之间的接触部分的长度越长。 12  和冷却辊 13 。 在熔体纺丝过程中,冷却辊 13  通常具有相对较高的旋转圆周速度。 因此,除非将该角度α定义为基本上等于零度,否则熔融合金 12  容易被旋转的冷却辊飞溅 13 。 因此,在熔体纺丝工艺中,角度α通常约为零度,并且熔体与冷却辊之间的接触部分通常较短。 相反,在带钢铸造工艺中,角度α可以相对较大,熔融合金与辊的外周之间的接触部分沿辊圆周方向测量可以相对较长,并且熔融合金可以被冷却。 几乎完全在滚轮上。 \n\n [0024] 如上所述,常规的带钢铸造工艺不像熔融纺丝工艺那样不使用喷嘴,而是输送熔融合金。 12  连续放在旋转辊上 13  通过拍摄 14 。 因此,带钢铸造工艺对于批量生产有效,并且可以降低制造成本。 \n\n [0025] 然而,在这种带钢铸造工艺中,从引导构件馈送到冷却辊上的熔融合金具有较小的动量。 因此,如果冷却辊以相对较高的速度旋转,则熔融合金与冷却辊表面之间的接触程度将太低而不能在冷却辊表面上恒定地形成熔池。 具有均匀厚度的薄带快速凝固合金。 因此,即使试图通过使用常规的带坯连铸机制备用于纳米复合磁体的具有纳米晶体结构的快速凝固的合金,所得的薄带快速凝固的合金将具有不均匀的厚度和结构。 因此,很难通过常规的带铸法连续生产实际可用的快速凝固的合金。 \n\n [0026] 另一方面,当使用如日本特开平11-333549号和2000-79451号中所公开的包括中间包的带钢连铸机时,在中间包上流动的熔体的流速低,并且所得到的快速 冷却速度往往较低。 因此,这种机器被认为对于制造用于纳米复合磁体的快速凝固的合金是无效的。 原因如下。 具体地,如果快速冷却速率低,则容易形成包括大量具有相对大的晶粒尺寸的晶体结构的合金。 另外,在许多情况下,诸如α-Fe相之类的软磁性相的晶粒可能具有如此大的晶粒尺寸,从而显着地降低了磁性。 \n\n [0027] 因此,日本特开平11-333549号公报和特开2000-79451号公报中公开的带铸机通常用于制造金属的完全结晶的铸锭。 通常将以此方式获得的快速凝固的合金用作包含R的烧结磁体的材料合金。 2 铁 14 B相作为其主相,不能用作纳米复合磁体的材料合金,在纳米复合磁体中,非常小的硬磁相和软磁相均匀分布在同一金属结构中。 \n\n 发明内容 \n\n [0028] 为了克服上述问题,本发明的优选实施方式提供了一种用于制造连续凝固的合金的方法和设备,该合金具有优异的磁性能,并且恒定且可大规模生产地显示出优异的磁性能,并且还提供了一种方法和装置。 用于制造具有优异磁性能的快速凝固合金的设备,用于其他类型的磁体。 \n\n [0029] 根据本发明优选实施方式的用于纳米复合磁体的快速凝固合金的制造方法优选地包括以下步骤:制备具有由以下通式表示的组成的合金的熔体: 1-m Ť m )  100 x yz 问 x [R y 中号 z ,其中T是选自由Co和Ni组成的组中的至少一种元素;  Q是选自由B和C组成的组中的至少一个元素,并且总是包括B;  R是至少一种稀土元素;  M是选自Al,Si,Ti,V,Cr,Mn,Cu,Zn,Ga,Zr,Nb,Mo,Ag,Hf,Ta,W,Pt,Au和A中的至少一种金属元素。 铅 摩尔分数x,y,z和m优选满足以下不等式:10at%≤x≤35at%;  2 at%≦y≦10 at%;  0 at%≦z≦10 at%; 和0≤m≤0.5。 该方法优选地还包括通过使熔体与旋转的冷却辊的表面接触而形成快速凝固的合金的步骤。 在该方法中,形成快速凝固的合金的步骤优选包括以下步骤:将熔融物浇铸到引导构件上,该引导构件的引导表面相对于水平面限定倾斜角,然后进给熔融物,在 引导表面通过至少一个管状孔到达冷却辊表面上的接触区域。 \n\n [0030] 在本发明的一个优选实施例中,形成快速凝固合金的步骤优选地包括以下步骤:布置引导构件,使得其引导表面相对于水平面限定大约5度至大约70度的倾斜角。  。 \n\n [0031] 在另一个优选实施例中,形成快速凝固合金的步骤优选包括布置引导构件的步骤,使得在与冷却辊的旋转方向相反的方向上限定约0度至约80度的角度α。 垂直平面和将冷却辊表面上的点(熔体首次与冷却辊接触)和冷却辊的旋转轴连接在一起的线。 \n\n [0032] 在又一个优选的实施方案中,形成快速凝固的合金的步骤优选包括以下步骤:通过多个管状孔将熔体分成许多熔体流,然后使熔体流与冷却辊接触。 \n\n [0033] 在又一个优选实施例中,形成快速凝固合金的步骤优选包括提供引导构件的步骤,该引导构件的管状孔的开口面积为约0.02cm。 2  到约0.5厘米 2 。 \n\n [0034] 在又一个优选实施例中,形成快速凝固的合金的步骤优选包括提供引导构件的步骤,该引导构件的管状孔的长度为约0.5mm至约50mm。 \n\n [0035] 在又一优选实施例中,形成快速凝固的合金的步骤优选包括布置引导构件的步骤,使得在管状孔的端部与表面之间提供约0.3mm至约50mm的距离。 冷却辊。 \n\n [0036] 在又一优选实施例中,形成快速凝固的合金的步骤优选包括以下步骤:布置引导构件,使得在刚好已经熔化的熔体的流动方向之间限定大约-20度到大约40度的角度γ。 从管状孔中射出的气体和一条将管状孔的入口中心与冷却辊的旋转轴连接在一起的线。 在这种情况下,如果熔体流动方向与冷却辊的旋转方向相反,则角度γ优选为正;如果熔体流动方向与冷却辊的旋转方向相同,则角度γ优选为负。 \n\n [0037] 在又一优选实施例中,形成快速凝固的合金的步骤优选包括以下步骤:提供引导构件,该引导构件具有以可附接和可移除的状态支撑包括管状孔的构件的结构。 \n\n [0038] 在又一个优选实施例中,形成快速凝固的合金的步骤优选地包括以下步骤:获得快速凝固的合金,该合金的平均厚度大于大约50μm至大约150μm,标准偏差最大为大约10μm, 通过以至少约1.5kg / min的速率将熔体浇注到引导表面上,然后使熔体在引导表面上向下流动,并使熔体的上表面暴露于大气中。 \n\n [0039] 在该特定的优选实施例中,形成快速凝固的合金的步骤优选包括使熔融物在减压的大气气体中与冷却辊的表面接触的步骤。 \n\n [0040] 更具体地说,使熔体与冷却辊接触的步骤优选包括将大气压力控制在约0.13kPa至约100kPa的步骤。 \n\n [0041] 根据本发明另一优选实施方式的制备纳米复合磁体粉末的方法优选包括以下步骤:通过上述根据本发明任一优选实施方式的方法制备用于纳米复合磁体的快速凝固合金,并进行粉碎。 快速凝固的合金。 \n\n [0042] 在一个优选的实施方案中,该方法优选进一步包括在进行将快速固化的合金粉碎的步骤之前和/或之后进行用于结晶目的的热处理工艺的步骤。 \n\n [0043] 根据本发明的又一优选实施方式的用于制造纳米复合磁体的方法优选地包括以下步骤:通过上述根据本发明的任一优选实施方式的方法制备纳米复合磁体粉末;以及将纳米复合磁体粉末压实。 变成磁铁形状。 \n\n [0044] 根据本发明的又一个优选实施例的射钉组件优选地接收合金的熔体并且将所述熔体供给到熔体淬火机的冷却辊上。 射出组件优选地包括引导表面,该引导表面由熔点高于熔体温度并且相对于水平面限定倾角的材料制成。 射出组件优选地进一步包括具有至少一个管状孔的发芽构件,该管状孔使在引导表面上向下流动的熔体通过。 发球元件优选地可附接到射钉组件并可从其拆卸。 \n\n [0045] 根据本发明的又一优选实施例的发散构件优选地以可移除的状态固定至根据本发明的优选实施例的射钉组件,并且优选地具有至少一个使熔体向下流过的管状孔。 射钉组件的导向表面。 \n\n [0046] 根据本发明的又一优选实施例的熔体淬火机优选地包括骤冷辊和射料组件,其接收合金熔体并将该熔体进料到骤冷辊上。 射出组件优选地包括引导表面,该引导表面由熔点高于熔体温度并且相对于水平面限定倾斜角的材料制成,并且该引导表面具有至少一个管状物。 孔,使在导向面上向下流动的熔体通过。 优选在管状孔的端部与冷却辊的表面之间提供约1mm至约50mm的距离。 \n\n [0047] 在本发明的一个优选实施例中,该收口构件优选地可附接到该射出组件上并从该射出组件上移除。 \n\n [0048] 根据本发明的又一优选实施例的制造用于永磁体的快速凝固的合金的方法优选地包括以下步骤:制备合金的熔体;以及通过使所述熔体与所述熔体的表面接触而形成所述快速凝固的合金。 旋转的冷却辊。 形成快速凝固的合金的步骤优选包括以下步骤:将熔体浇铸到导向构件上,导向构件的导向表面相对于水平面形成倾斜角,然后将熔融金属送入导向表面, 通过至少一个管状孔到达冷却辊表面上的接触区域。 形成快速凝固的合金的步骤优选地包括布置引导构件的步骤,以使得在至少一个管状孔的端部与冷却辊的表面之间提供大约1mm至大约50mm的距离。 \n\n [0049] 在一个优选实施例中,形成快速凝固的合金的步骤优选包括以下步骤:布置引导构件,使得其引导表面相对于水平面限定约5度至约70度的倾斜角。 \n\n [0050] 在另一个优选实施例中,形成快速凝固合金的步骤优选包括布置引导构件的步骤,使得在与冷却辊的旋转方向相反的方向上限定约5度至约80度的角度α。 垂直平面和将冷却辊表面上的点(熔体首次与冷却辊接触)和冷却辊的旋转轴连接在一起的线。 \n\n [0051] 在又一个优选的实施方案中,形成快速凝固的合金的步骤优选包括以下步骤:通过多个管状孔将熔体分成许多熔体流,然后使熔体流与冷却辊接触。 \n\n [0052] 在又一优选实施例中,形成快速凝固合金的步骤优选包括提供引导构件的步骤,该引导构件的管状孔的开口面积为约0.03cm。 2  到约0.6厘米 2 。 \n\n [0053] 在又一优选实施例中,形成快速凝固的合金的步骤优选包括提供引导构件的步骤,该引导构件的管状孔的长度为约5mm至约50mm。 \n\n [0054] 在又一优选实施例中,形成快速凝固的合金的步骤优选地包括以下步骤:迅速冷却并凝固已经从管状孔出来的熔体流的表面,从而使由熔体流形成的管状构件延伸并延伸。 管状孔的有效长度约为10毫米或更长。 \n\n [0055] 在又一优选实施例中,形成快速凝固的合金的步骤优选包括以下步骤:允许熔融物在引导表面上向下流动,并使熔融物的上表面暴露于大气中,并用熔融流填充管状孔。  。 \n\n [0056] 在该特定的优选实施例中,形成快速凝固的合金的步骤优选包括以下步骤:获得平均厚度大于大约50μm至大约150μm且标准偏差至多大约10μm的快速凝固的合金, 通过以至少约1.5kg / min的速率将熔体浸入引导表面上。 \n\n [0057] 在又一个优选的实施方案中,形成快速凝固的合金的步骤优选地包括使熔融物在减压的大气中与冷却辊的表面接触的步骤,同时基本平衡在铸件表面上的大气的压力。 熔体在导向表面上向下流动,而大气中的气体则从管状孔中流出。 \n\n [0058] 根据本发明的又一优选实施方式的制造磁体粉末的方法优选地包括以下步骤:通过根据上述本发明的任何优选实施方式中的任一个的方法制备用于磁体的快速凝固的合金,并将其粉碎。 快速凝固的合金。 \n\n [0059] 在本发明的一个优选实施方案中,该方法优选进一步包括以下步骤:在进行快速固化的合金的粉碎步骤之前和/或之后,进行用于结晶目的的热处理工艺。 \n\n [0060] 根据本发明的又一优选实施方式的磁体的制造方法优选包括以下步骤:通过上述根据本发明的优选实施方式的方法制备磁体粉末;以及将所述磁体粉末压实以获得粘结磁体。  。 \n\n [0061] 根据本发明的又一优选实施方式的磁体的制造方法优选包括以下步骤:通过上述根据本发明的优选实施方式的方法制备磁体粉末;以及烧结所述磁体粉末以获得烧结磁体。  。 \n\n [0062] 通过以下参考附图对本发明的优选实施例的详细描述,本发明的其他特征,要素,过程,步骤,特征和优点将变得更加明显。 \n\n 附图的简要说明 \n\n [0063] 图。 图1是示意性侧视图,其示出了用于传统熔体纺丝机的装置。 \n\n [0064] 图。 图2是示出传统的带材连铸机的布置的示意性截面图。 \n\n [0065] 图。 图3是示出用于本发明的各种优选实施方式的熔体淬火机的布置的示意性截面图。 \n\n [0066] 无花果 图4A和图4B分别是示出可以在图3所示的机器中有效使用的芽的透视图和截面图。  3。 \n\n [0067] 图。 图4C是示出了用于本发明的另一优选实施例中的替代枝条的剖视图。 \n\n [0068] 图。 图5是示出为图4所示的芽提供的管状孔的细节的示意性截面图。  3。 \n\n [0069] 图。 图6是表示本发明的优选实施方式的具体例和比较例的薄带快速凝固合金的厚度分布的图。 \n\n 具体实施方式 \n\n [0070] 在下文中,将描述根据本发明的用于纳米复合磁体的快速凝固合金的制造方法的优选实施方式。 \n\n [0071] 通过根据本发明的优选实施方式的方法获得的用于纳米复合磁体的快速凝固的合金优选具有由以下通式表示的组成:(Fe 1-m Ť m )  100 x yz 问 x [R y 中号 z ,其中T是选自由Co和Ni组成的组中的至少一种元素;  Q是选自由B和C组成的组中的至少一个元素,并且总是包括B;  R是至少一种稀土元素;  M是选自Al,Si,Ti,V,Cr,Mn,Cu,Zn,Ga,Zr,Nb,Mo,Ag,Hf,Ta,W,Pt,Au和A中的至少一种金属元素。 铅 摩尔分数x,y,z和m优选满足以下不等式:10at%≤x≤35at%;  2 at%≦y≦10 at%;  0 at%≦z≦10 at%; 和0≤m≤0.5。 \n\n [0072] 在本发明的优选实施方式中,具有上述组成的合金的熔体与旋转的冷却辊的表面接触并被快速冷却和固化。 在该快速冷却过程步骤中,使用引导部件,该引导部件的引导表面相对于水平面限定倾斜角,并且将熔体装到引导部件上。 然后,在引导表面上向下流动的熔体通过至少一个管状孔被供给到冷却辊上。 \n\n [0073] 在这样的优选实施例中,已经浇铸到引导构件的倾斜的引导表面上的熔体在沿着引导表面向下流动的同时被适当地精馏。 然后,由于通过管孔时的节流作用,精馏的熔体增加了其流速。 然而,熔体在通过管状孔时进一步被精馏,然后到达冷却辊的表面。 从管状孔中排出的熔体以比在引导表面上向下流动的熔体的动量更大的动量碰撞冷却辊的表面。 因此,熔体与辊表面之间的接触程度增加,从而实现均匀的冷却。 \n\n [0074] 以这种方式,根据本发明的该优选实施例,熔体可以以与常规熔体纺丝机几乎可比的熔体喷射速率碰撞冷却辊。 因此,即使冷却辊以较高的圆周速度旋转,也可以在冷却辊上恒定地形成相当大的熔池。 结果,可以以恒定的冷却速率获得具有均匀厚度的薄带快速凝固合金。 \n\n [0075] 应该注意的是,通过对快速凝固的合金进行热处理而获得的纳米复合磁体的性质对尚未被加热的快速凝固的合金的微观结构非常敏感。 因此,如果快速冷却条件改变,则快速凝固的合金可能具有不均匀的结构,并且可能影响所得的磁性。 更具体地,即使旋转的冷却辊的圆周速度和熔体进料速率保持恒定,快速凝固的合金的一部分仍可能以异常低的速率被冷却。 然后,晶粒尺寸过大的α-Fe相可能在该部分成核,因此可能使所得的磁性能劣化。 \n\n [0076] 而且,细条快速凝固的合金的平均厚度确实影响通过将细条快速凝固的合金粉碎而获得的粉末颗粒的形状。 具体而言,快速凝固的合金越薄,粉末颗粒越扁平。 然后,这样的粉末颗粒将具有降低的流动性和负载性,并且所得的生坯密度也应当降低。 另一方面,如果所制备的快速凝固的合金相对较厚,则粉末颗粒将具有等轴测形状并显示出增加的流动性或负载性。 因此,这样的粉末更容易压制成任何期望的形状。 然而,本发明人通过实验发现并证实,当通过常规的熔融纺丝或带铸法制备时,这种厚的快速凝固的合金将具有什至更不均匀的厚度。 因此,如果为了增加所得粉末的流动性而获得厚度超过约50μm的薄带快速凝固合金,则该薄带快速凝固合金的一部分将包含过大的晶粒。 晶粒尺寸,从而削弱了交换相互作用并降低了磁性能。 \n\n [0077] 与具有这种特性的常规纳米复合磁体相反,具有单相R的快速凝固磁体 2 铁 14 B结构的性能不受快速凝固合金厚度变化的严重影响。 特别是,通过提高熔融合金的冷却速度,将厚度约为50μm以下的薄的快速凝固合金制成基本上完全非晶化的合金时,最终磁铁的特性几乎不受快速凝固厚度的变化的影响。 合金。 \n\n [0078] 本发明人通过实验发现并证实,当使用传统的熔体纺丝机喷射具有根据本发明的优选实施方式的组成的熔融合金并迅速冷却并固化时,每单位时间的熔体进料速度为 冷却速率不是恒定的,而是可变的,并且所获得的冷却速率根据所获得的薄带快速凝固合金的位置而显着变化。 因此,这种快速凝固的合金具有不均匀的结构。 在这种情况下,通过将这种合金粉碎而获得的磁体粉末也表现出不均匀的磁性。 并且,由这种磁体粉末制成的磁体包括磁性能差的粉末颗粒。 结果,那些劣质的粉末颗粒降低了所得磁体的整体性能。 \n\n [0079] 因此,如果使用常规的熔体纺丝机制备具有本发明的各种优选实施方案的组成的快速凝固的合金,则优选将高压恒定地施加到将要通过非常窄的喷嘴孔的熔体上。  。 然而,在那种情况下,难以精确地控制要施加的压力。 另外,熔体可能会受到狭窄喷嘴孔内壁的强阻力,从而显着改变熔体喷射速度或速率。 \n\n [0080] 相反,根据本发明的优选实施例,熔体可以在倾斜的熔体引导表面上被精馏,然后可以通过在底部具有相对大的开口面积的管状孔被供给到冷却辊上。 因此,尽管没有背压(即,在仅重力保持熔体流动的情况下),但是与常规的带铸法相比,熔体可以以更大的动量被供给到辊的表面上。 结果,熔体与辊表面之间的接触程度增加,并且气体极不可能被吸收到辊表面与熔体之间的间隙中,从而更均匀地冷却了熔体。 另外,由于熔体的动量几乎恒定且不变,因此所获得的快速凝固的合金可以具有均匀的厚度和均匀的结构。 因此,所得磁体也可以表现出改善的性能。 \n\n [0081] 在下文中,将参考附图描述本发明的优选实施例。 \n\n [0082] 在该优选实施例中,诸如图1所示的熔体淬火机被设置为熔体淬火机。 优选使用3。 图1所示的熔体淬火机包括: 最好在可形成真空或减压惰性气氛的空间(例如腔室)中提供图3所示的空间。 \n\n [0083] 如图1所示。 如图3所示,熔体淬火机优选包括熔炼坩埚 21  用于在其中熔化材料合金的冷却辊 23  用于快速冷却和固化熔融合金 22  从熔化的坩埚里塞满的 21 和芽(或中间包) 24  作为用于引导熔融合金的熔体引导构件 22  从熔化的坩埚 21  放在冷却辊上 23 。 拍摄 24  最好有多个管状孔 24 a  在其末端(或底部)。 \n\n [0084] 熔化的坩埚 21  可以融化 22 通过将材料合金熔化而制成, 24  以基本恒定的速度。 通过控制熔化坩埚的倾斜操作,可以任意调节灌浆速度 21 , 例如。 \n\n [0085] 冷却辊的外周 23  最好由良好的热导体(例如铜)制成。 滚筒 23  可以优选地具有约20cm至约100cm的外径和约15cm至约100cm的宽度。 滚筒 23  可以通过电动机(未示出)以预定的旋转速度旋转。 通过控制该旋转速度,冷却辊的圆周速度 23  可任意调节。 在一优选实施例中,冷却辊 23  最好在内部进行水冷。 通过该熔体淬火机获得的冷却速率可控制在约10℃的范围内。 2 °C / s至约8×10 4 通过选择适当的冷却辊转速来达到°C / s 23 , 例如。 \n\n [0086] 拍摄 24 例如,由陶瓷制成的可以纠正熔体的流动 22 ,它不断从熔化的坩埚中塞满 21  以预定的流速,通过降低熔体的流速 22  达到一定程度以暂时保留熔体的流动 22 。 由射料的熔体引导表面定义的倾斜角β 24  相对于水平面的角度优选在约5度至约70度的范围内。 原因如下。 具体地,如果倾斜角β小于约5度,则熔体 22  不能在导向面上如此平滑地流动,以使熔体的动量保持恒定 22  穿过管状孔 24 a 。 因此,不能获得期望的均匀快速凝固的合金结构。 但是,如果倾斜角β超过约70度,则熔化 22  在导向面上向下流动将成为湍流,因此不可能在冷却辊上不断形成熔池 23  而是引起熔体飞溅。 倾斜角β更优选为约10度至约60度,并且甚至更优选为约15度至约50度。 \n\n [0087] 如图1所示。  3,在垂直平面和连接冷却辊表面上的点的线之间定义的角度 23 ,在那融化 22  与冷却辊接触 23  第一次(这里称为“接触起点”)和冷却辊的旋转轴 23  在本文中由α标识。 当α= 0度时,接触起点位于滚子表面的顶部。 在下面的描述中,如果接触起点在辊旋转方向上位于辊表面顶部的上游,则角度α将被视为正;但如果接触起点在接触面的顶部位于下游,则角α将被视为负。 滚筒表面沿滚筒旋转方向。 如果角度α为负,则在冷却辊上无法形成熔池 23 而是熔体飞溅。 因此,熔体不能如预期的那样快速冷却和固化。 但是,如果角度α超过约80度,则熔体将无法流到冷却辊上,而是掉落到冷却辊上 23 。 因此,熔体也不能迅速冷却和固化。 考虑到这些考虑,α优选为约0度至约80度,更优选为约2度至约60度,甚至更优选为约2度至约45度。 通过将角度α限定在这些优选范围中的任何一个中,熔体与冷却辊保持接触的接触区域的长度(在本文中称为“接触长度”)可以为至少约10mm。 \n\n [0088] 图。 图4A示出了芽的更详细的优选结构。 24  在该优选实施例中使用。 如图1所示。  4A,拍 24  最好包括一个装满部件 240 ,可以连接到芽的末端(或底部),也可以从芽的底部除去 24  布置成面对冷却辊的外周 23 。 在该优选实施例中,填塞构件 240  最好包括三个管状孔 24 a 间隔W被定义为两个相邻管状孔的中心之间的距离。 24 a 。 管状孔之间的间隔W 24 a  优选约10mm至约50mm,更优选约15mm至约40mm。 在该优选实施例中,间隔W优选为大约30mm。 \n\n [0089] 图。 图4B是芽的截面图 24  如图所示。  4A。 如图1所示。  4B,充实的成员 240  应该附在芽上或从芽上移下来 24  从引导表面上方。 在该优选实施例中,管状孔 24 a  提供了这样的可替换拍摄 24 。 因此,即使管状孔 24 a  被融化物堵塞,无需更换新芽 24  整体而言,但成员众多 240  只需要更换。 \n\n [0090] 应当注意,本发明决不限于具有这种结构的芽。 例如,如图2所示,  4C,拍摄 24  可能包括引导部分 24 b  用于滑动装满部件 240  在其上。 如果拍 24  如图所示。 使用4C,装满构件 240  可连接到芽上或从芽上拆下 24  基本上垂直于熔体流动方向(即,基本上平行于冷却辊的旋转轴线)的方向。 \n\n [0091] 管状孔 24 a  不一定要笔直,但可以是弯曲的。 另外,管状孔的内径 24 a  不一定是恒定的,而是可以沿熔体流动方向逐渐减小。 无论如何,管状孔 24 a  需要具有使湍流最小化的形状。 \n\n [0092] 管状孔 24 a  优选在其底部具有适当的开口面积。 在制备具有上述组成的用于纳米复合磁体的快速凝固合金时,如果管状孔的开口面积 24 a  超过约0.5厘米 2 ,然后融化 22  喷出速度过快,因此很难在辊子上不断形成熔池 23  但可能会使熔体飞溅。 在这种情况下,熔体可能无法按预期快速冷却和固化。 相反,如果管状孔的开口面积 24 a  小于约0.02厘米 2 ,则单位时间的熔体淬火速率将很短,例如约1.5 kg / min。 在那种情况下,不仅生产率将显着降低,而且所得的快速凝固的合金结构还将包括至少约50vol%的非晶相。 然后,最终永磁体产品的磁性能将稍微降低。 出于这些考虑,管状孔(即注油口) 24 a  优选具有约0.02cm的开口面积 2  到约0.5厘米 2 。 最小所需开口面积更优选为约0.03cm 2  甚至更优选约0.05cm 2 。 同时,最大允许开口面积可以为约0.2cm 2  也可能约为0.15厘米 2 。 \n\n [0093] 为了进一步提高单位时间内的熔体淬火速度,需要四个或更多的管状孔 24 a  可能会提供。 无论如何,有多个管状孔 24 a  优选地提供。 这是因为即使每个管状孔 24 a  由于具有较小的开口面积,在那种情况下仍可以保持足够高的总处理速度。 换句话说,如果只有一个或两个管状孔 24 a  提供,每个管状孔 24 a  优选具有相对大的开口面积(例如至少约0.07cm 2 )。 \n\n [0094] 在该优选实施例中,熔体 22  已经塞满了芽 24  然后接触冷却辊 23  通过三个管状孔 24 a 。 因此,产生的三个熔体流 22 ,刚刚接触过冷却辊 23 ,在冷却辊的外围移动并被冷却辊迅速冷却和固化 23  旋转。 \n\n [0095] 为防止熔体流动,已通过在枝条的导向面上向下流动而对其进行矫正 24 从湍流变成管状孔 24 a  优选地具有至少约0.5mm的长度。 但是,如果管状孔 24 a  太长,那么一部分融化 22  可能会在管状孔内冷却并凝固 24 a 从而可能堵塞管状孔 24 a  与融化。 因此,管状孔 24 a  优选地具有最大约50mm的长度。 \n\n [0096] 另外,管状孔的底部之间的距离 24 a  和冷却辊的表面 23  优选为约1mm至约50mm。 但应注意,融化后 22  从管状孔中喷出 24 a  在融化之前 22  到达冷却辊 23 ,熔体的表面部分 22  它的一些热量散发到冷却气氛中,并且可能会部分固化。 在那种情况下,熔体的凝固的表面部分将用作具有管状孔的圆柱形构件(在本文中将其称为“伪管状构件”),该管状构件稀薄地涂覆在内部流动的熔体。 当形成这种假管状构件时,所获得的效果就像管状孔一样。 24 a  拍摄 24  有一个延长的长度。 因此,管状孔的底部之间的距离 24 a  和冷却辊的表面 23  优选大约3mm或更大,使得管状孔的实质长度 24 a  落在约0.5mm至约30mm的优选范围内。 \n\n [0097] 这样的具有管状孔的假管状部件是通过允许从管状孔喷出的熔融物的表面部分而形成的。 24 a  拍摄 24 ,由大气冷却和固化。 然而,以这种方式形成的伪管状构件总是与熔体流动接触并被加热至高温,因此,并不总是完全固化而是可能至少部分地熔融。 因此,在此,伪管状部件所表现的“凝固”状态在广义上是指具有足够高的刚度以控制供给到冷却辊的熔体流动的刚性的管状部件的状态。 因此,即使管状构件处于“凝固”状态,管状构件也不一定完全凝固。 \n\n [0098] 由熔体的自然凝固形成的这种伪管状构件可以被具有足够长度(例如,约20mm或更大)的管状孔的发芽构件代替。 但是,在这种情况下,如果管状孔较窄,则相对较长的管状孔可能会被熔液堵塞。 然而,如果在缩短管状孔的端部与冷却辊表面之间的距离的情况下进行快速冷却过程(即,不允许由熔体自然凝固形成的假管状构件延伸) 其长度足够长),则可能无法在冷却辊上持续且容易地形成熔池。 这可能是因为管状孔的有效长度,包括附加的伪管状构件的有效长度,将不足足够的长度,并且在这种情况下会干扰熔体流动。 考虑到这些考虑,优选在原始管状孔的端部与冷却辊的表面之间提供至少约5mm(更优选地,至少约10mm)的距离开始熔融淬火工艺。 然后,优选地,通过在此之后延伸伪管状构件,将管状孔的有效长度延伸至大约7mm至大约50mm之间的某处。 \n\n [0099] 应该注意的是,如果在冷却辊的外周上定义了多个熔体接触区(或熔体淬火区) 23  通过提供多个管状孔 24 a  如在该优选实施例中所做的那样,然后可以在基本均匀的条件下骤冷每个所得的熔体流,同时将熔体进料到冷却辊上。 23  以每单位时间增加的速度。 与将熔体进给到冷却辊上单个区域的情况相比 23  以相当高的速度冷却辊的温度升高 23  可以大大降低冷却辊的冷却能力 23  可以保持足够高。 结果,即使当制备厚度大于约50μm的快速凝固的合金时,其厚度的变化也可以最小化。 可替代地,可以相对于单个冷却辊布置多个枝条,每个枝条包括至少一个管状孔,使得在单个冷却辊上限定多个熔体接触区。 \n\n [0100] 另外,拍 24  也可以调节熔体的温度 22  即将到达冷却辊 23 。 熔体温度 22  拍摄中 24  优选其液相线温度比其液相线温度高约100℃或更高。 这是因为如果熔化温度 22  如果过低,那么将影响所得快速凝固合金性能的初始晶体可能会局部成核并保留在快速凝固合金中。 熔化温度 24  通过调节从熔化坩埚中流出的熔化物的温度可控制温度 21  朝着拍摄 24  或芽的热容量 24  本身,例如。 如有必要,可以为此目的专门提供一个射灯加热器(未显示)。 为了最大程度地减少枝条上熔体温度的降低 24 ,枝条上的熔体流动区域优选具有相对短的长度。 在一个优选的实施方案中,这种长度优选为约3cm至约20cm。 \n\n [0101] 熔融合金在冷却辊的外周凝固 23  成为薄带快速凝固的合金 25 ,很快就会离开冷却辊 23 。 \n\n [0102] 接下来,参考图2。  5,夹角,定义了熔体的流动方向 22  刚从管状孔中发射出来的 24 a  和一条将管状孔的入口中心连接在一起的线 24 a  和冷却辊的旋转轴 23 在本文中由γ标识。 在下面的描述中,如果熔体的流动方向与冷却辊的旋转方向相反,则角度γ为正 23 如果熔体流动方向与辊子旋转方向相同,则为负。 在该优选实施方式中,角度γ优选为约-20度至约40度。 原因如下。 具体地,如果角度γ小于大约-20度,则将不形成熔池,但是熔体将飞溅并且不能如预期地被淬火。 另一方面,如果角度γ超过约40度,则熔体将不会在辊子上滑行,但会掉落,并且也无法按预期进行淬火。 考虑到这些考虑,角度γ优选地为大约-15度至大约30度,并且更优选地为大约-13度至大约25度。 \n\n [0103] 待制备的薄带快速凝固合金优选具有大于约50μm至约150μm的平均厚度。 根据本发明的优选实施方式,可以将快速凝固的合金的厚度的标准偏差控制为约20μm或更小。 结果,快速凝固的合金可以具有均匀的结构并且可以显着改善其磁性能。 如果应该以高达约1.5 kg / min或更高的熔融进料速度获得平均厚度小于约50μm的快速凝固合金,则应以相当高的圆周速度旋转冷却辊。 在那种情况下,可以获得基本上完全非晶化的合金。 然而,对于通过本发明的优选实施方式制造的纳米复合磁体,如果对这种基本上完全非晶化的快速凝固的合金进行热处理,则不能恒定地形成具有优异磁性能的纳米复合结构。 本发明人评估了热处理合金的磁性能。 结果,本发明人发现,快速凝固的合金的最小所需平均厚度更优选为约55μm,甚至更优选为约60μm。 \n\n [0104] 另一方面,如果冷却辊的圆周速度 23  控制薄带快速凝固合金的平均厚度将大于150μm,然后可以通过冷却辊淬火熔融合金 23  不足够。 在那种情况下,要在所得快速凝固的合金中沉淀的铁基硼化物的平均晶粒尺寸可以大于约50nm,并且可以产生具有约100nm以上的过量晶粒的α-Fe相。  。 当通过热处理具有这种晶体结构的快速凝固的合金来制造磁体时,该磁体在其退磁曲线处应表现出减小的环矩形度。 因此,快速凝固的合金的平均厚度优选为至多约150μm。 \n\n [0105] 一般而言,薄带快速凝固合金越厚,冷却速度越低,并且在快速凝固合金中析出的晶体尺寸越大。 在根据本优选实施例的要用作纳米复合磁体的合金中,如果快速凝固的合金中包括的软磁相(例如α-Fe和铁基硼化物)的平均晶粒尺寸大于约50 nm, 则将在硬磁相的晶粒内部创建磁畴壁。 在那种情况下,由于在那些软磁性相和硬磁性Nd之间发生交换耦合 2 铁 14 B相,即使是非常弱的外部退磁磁场也容易产生磁化反转,从而可能使预期的硬磁性能劣化。 因此,快速凝固的合金中包含的软磁性相的平均结晶粒径优选为最大约50nm,更优选为最大约30nm,进一步优选为最大约20nm。 \n\n [0106] 另一方面,钕 2 铁 14 B相优选具有至多约300nm的平均晶粒尺寸,其是单个磁畴尺寸。 为了通过交换相互作用改善磁性能,钕 2 铁 14 B相优选具有至多约200nm的平均晶粒尺寸。  Nd的最大允许平均晶粒尺寸 2 铁 14 B相优选为约150nm,甚至更优选为约100nm。 \n\n [0107] 在本发明的各种优选实施方式中,重要的是通过适当地确定内径和管状孔的数量,将所得的薄带快速凝固合金的厚度和宽度限定在它们的优选范围内。 24 a ,熔体进料速度和冷却辊的圆周速度 23 , 例如。 为了获得均匀的结构,还必须使宽度方向的冷却速度均匀。 为此,优选通过调节管状孔的开口面积将薄带快速凝固合金的宽度控制为约3mm至约20mm。 24 a 。 薄带快速凝固的合金越宽,合金越容易被粉碎。 因此,薄带快速凝固的合金更优选地具有至少约5mm的宽度。 \n\n [0108] 此外,如果快速冷却气氛的压力过高,则冷却辊周围的惰性气体 23  高速旋转的金属被吸收到被淬火的熔体中。 在这种情况下,熔体无法持续淬火。 另一方面,如果大气中的气体压力太低,则薄带快速凝固的合金会离开冷却辊 23 不能迅速被惰性气体冷却,并且可能结晶过度。 然后,不能获得包括许多非晶相的期望合金。 在那种情况下,热处理的合金将表现出劣化的磁性能。 考虑到这些考虑,惰性气体优选具有约0.13kPa至约10kPa的压力。 当快速冷却气氛具有在该优选范围内的压力时,也可以通过熔体流的表面部分的自然固化来恒定地形成伪管状构件。 \n\n 纳米复合磁体的优选组成 \n\n [0109] Q是B(硼)和C(碳)中的至少一个。  B是软磁性Fe等铁系硼化物必不可少的元素 3 硼或铁 23 B相和硬磁R 2 铁 14 B相是纳米复合永磁材料的主要相。 如果B的摩尔分数x超出10%至30%的范围,则永久磁铁性能将无法实现。 因此,B摩尔分数x优选满足10at%≤x≤30at%。 如本文所用,“铁 3 B”包括铁 3.5 B,与Fe几乎没有区别 3 B. \n\n [0110] 此外,如果B的摩尔分数x低于约10at%,那么熔体的无定形可成形性将显着降低。 在那种情况下,如果通过根据本发明的优选实施方式的方法制备快速凝固的合金,则在快速凝固过程中熔融合金将不会被过冷,因此,具有优异的光滑度的薄带合金不能 获得。 而且,即使当这种薄带快速凝固的合金被加热并结晶时,也不能获得所需的均匀的纳米复合磁体结构,并且不能获得优异的磁性能。 另一方面,如果B的摩尔分数x超过约30at%,则不能充分产生硬磁相。 因此,优选的x范围为约10at%至约20at%,并且更优选的x范围为约10.5at%至约20at%。 应该注意的是,C最多可以代替B的约50原子%,因为磁性或金属结构不会受到取代的影响。 \n\n [0111] 稀土元素R是R不可缺少的元素 2 铁 14 B,它是显示永磁体特性所需的硬磁相。 在本发明的各种优选实施方式中,R优选包括选自由Pr,Nd,Dy和Tb组成的组中的至少一种元素。 然而,为了控制非晶态的可成形性和结晶温度,可以用任何其他的稀土元素代替一部分R。R的摩尔分数y不应低于约2at%,因为具有R的硬磁相 2 铁 14 在R摩尔分数y小于约2at%时不能产生B晶体结构。 然而,如果R摩尔分数y大于约10原子%,则将不会产生铁或铁基硼化物,并且将无法获得纳米复合磁体。 考虑到这些考虑,R的摩尔分数y优选满足2at%≤y [0112] 除了上述元素之外,材料合金的其余部分可以仅是Fe,但是一部分可以用Co代替。 然后,退磁曲线的环路矩形度将得到改善,并且最大能量积(BH)  最高 将增加。 \n\n [0113] 此外,一部分Fe也可以被选自Al,Si,Ti,V,Cr,Mn,Cu,Zn,Ga,Zr,Nb,Mo,Ni中的至少一种金属元素M代替。  ,H,钽,钨,铂,铅,金和银。 但是,如果至少一种金属元素M的总摩尔分数z超过约10原子%,则磁化强度将降低。 因此,优选的z范围为0at%≤z≤10at%,更优选的z范围为0.3at%≤z≤5at%。 \n\n [0114] 在这些金属元素中,Ti带来特别有益的效果。 这是因为,当添加Ti时,具有R的化合物 2 铁 14 B晶体结构(即,硬磁相)将优先成核并生长,并且在快速凝固过程中将最小化α-Fe相的产生。 而且,获得了一种结构,其中非常小尺寸的铁基硼化物稀薄地分布在硬磁相的晶界上。 这种结构可以表现出优异的磁性,作为纳米复合磁体。 因此,优选添加Ti。 优选以约0.5原子%至约7原子%,更优选约1原子%至约6原子%的摩尔分数添加Ti。 \n\n 例子 \n\n [0115] 在下文中,将描述本发明的优选实施例的具体示例。 在本发明优选实施方案的以下具体实施例中,使用如图1所示的熔体淬火机。 使用了3。 具体而言,首先,称量纯度为约99.5%以上的Nd,Fe,Co,B,C和Ti的各个材料,使得混合物的总重量为约5kg,合金组成为Nd。 8.5 铁 75 一氧化碳 2 乙 11 C 1 钛 2.5  (下标表示原子百分比)。 然后,将混合物注入氧化铝坩埚中。 \n\n [0116] 接下来,通过在氧化铝坩埚中的高频加热处理使原料合金熔融,从而获得具有上述组成的熔融合金。 熔融合金具有约1350℃的温度。此后,使氧化铝坩埚倾斜以将熔融合金预备到图1和图2所示的射钉组件的引导表面上。  4A和4B。 \n\n [0117] 具有一个,两个,三个或四个管状孔的可更换部件安装在导向表面的底部。 因此,在引导表面上流下的熔体通过管状孔汇聚,从而被供给到在管状孔下方旋转的冷却辊的表面上。 \n\n [0118] 芽的管状孔的长度为约20mm。 管状孔的端部与冷却辊表面之间的距离也约为20毫米。 从管状孔排出的熔体与设置在压力约为11.3kPa的Ar气氛中的冷却辊接触,并迅速冷却并固化。 冷却辊以约15m / s的圆周速度旋转。 下表1显示了这种快速冷却过程的条件,包括设置的管状孔的数量和开口面积: \n\n [0119] \n\n    TABL 1  熔化  没有。 开场 淬火  的 区 α β γ 迅速地 率  孔洞(厘米 2 )  (度) (度) (度) 凝固了吗 (公斤/分钟)  考试-  PLES  1 2 0.03 10 32 10 是 4.0  2 2 0.07 20 40 3 是 5.3  3 3 0.07 30 35 5 是 7.0  4 3 0.13 30 35 5 是 11.0  5 1 0.18 10 25 0 是 7.3  6 4 0.07 30 25 5 是 8.7  7 3 0.07 10 35 10 是 7.0  8 2 0.13 30 35 -12 是 7.2  CMP  9 — — 30 25 — 是 6.0  10 — — 10 25 — 是 6.0  11 — — 30 35 — 没有 — \n\n [0120] 在比较例9、10和11的每一个中,使用没有管状孔的引导构件通过带式铸造工艺制备了薄带快速凝固的合金。 材料合金具有与用于本发明的优选实施方式的具体实例的成分相同的成分。 如表1所示,薄带快速凝固合金可以在9号和10号样品的条件下获得,但是在11号样品的条件下不能获得。在比较例中,熔体碰撞到 滚筒表面的动量较小,并且与滚筒表面的接触程度较低。 因此,所得的薄带快速凝固合金的已经与辊表面接触的部分表现出低的光滑度并且具有大量的微小凹入部分。 这意味着快速凝固的合金具有许多局部不足的冷却部分。 因此,由这种合金制成的磁体应表现出劣化的磁性能。 \n\n [0121] 图。 图6示出了在表1所示的样品编号4的条件下作为本发明的优选实施方式的一个具体实例获得的薄带快速凝固合金的厚度分布,以及薄带快速凝固的厚度分布。 在表1所示的9号样品的条件下作为比较例获得的合金。用具有球形表面的千分尺测量100片薄带快速凝固合金的厚度。 这些块中的每一个具有约20mm至约50mm的长度和约6mm的宽度。 \n\n [0122] 从图11所示的结果可以看出, 如图6所示,代表本发明的优选实施例的具体实例的薄带快速凝固的合金具有比代表比较例的薄带快速凝固的合金更均匀的厚度。 以比样品9更高的熔体进料速率获得样品4。因此,样品4的所得薄带快速凝固合金的平均厚度大于样品9的平均厚度。 例如,与本发明优选实施方案的具体实施例相比,薄带快速凝固合金的厚度分布在宽得多的范围内。 这可能是因为在比较例中,熔体与辊表面之间的接触度应较低。 \n\n [0123] 代表比较例的薄带快速凝固的合金的平均厚度小于代表本发明的优选实施例的具体例子的薄带快速凝固的合金的平均厚度。 但是,即使使用比较例的带式连铸机,即使提高熔体进料速度以获得具有与代表4号样品的薄带快速凝固合金相当的平均厚度的薄带,也不能形成熔池。 不能形成具有恒定厚度的薄带合金,并且无法获得良好的可复制性。 \n\n [0124] 从这些结果清楚地看出,根据本发明优选实施方式的具体实例,尽管其平均厚度为约80μm以上,但是可以得到具有良好的再现性和厚度的标准偏差的薄带快速凝固合金。 最小化。 \n\n [0125] 接下来,通过动力磨将在上述条件下获得的薄带快速凝固的合金粗粉碎成约850μm以下的尺寸。 然后,将粗粉碎的合金进行热处理。 具体地,通过使用环带式连续加热炉将合金在Ar气氛中加热至约700℃并在约700℃下保持约10分钟,然后冷却至室温。 作为该热处理的结果,已经存在于快速凝固的合金中的非晶相被结晶,并且获得了最终的纳米复合磁体结构。 用振动样品磁力计测量以这种方式获得的纳米复合磁体粉末的磁性能。 结果示于下表2: \n\n [0126] \n\n    表2  Br(BH)  最高  H J  (公吨)(千焦/米 3 )  (kA / m)  例子  1 900 120 666  2 863 116 672  3 870 115 672  4 862 112 661  5 853 110 681  6 866 115 675  7 882 117 669  8 873 115 683  CMP  9 834 104 684  10 843 103 652  11 827 98 671 \n\n [0127] 如上所述的本发明的优选实施方式及其具体示例涉及纳米复合磁体。 然而,本发明人通过实验发现并证实,要用图1所示的机器进行的制造过程是不可行的。 图3所示的合金不仅可有效地用于制造用于纳米复合磁体的快速凝固的合金,而且还可用于制造用于其他类型的磁体(包括粘结磁体和烧结磁体)的快速凝固的合金。 也就是说,本发明不限于具有任何特殊组成的合金,只要该合金将被熔融并快速冷却并固化即可。 换句话说,根据本发明的各种优选实施方式的用于制造快速凝固的合金的设备和方法可广泛地用于制造用于任何类型的磁体的快速凝固的合金。 \n\n [0128] 在下文中,将描述根据本发明的替代优选实施方式的用于烧结磁体的快速凝固合金的制造方法。 \n\n [0129] 即使当图1所示的机器 图3所示的熔体被用于制造用于烧结磁体的快速凝固的合金,在倾斜的枝条的引导表面上向下流动的熔体在穿过管状孔的同时被管状孔会聚,然后被 在保持层流状态的同时以很大的动量喷射。 因此,熔体也以很大的动量碰撞到冷却辊的表面。 结果,增加了熔融合金与冷却辊表面之间的接触程度,并且即使在旋转的冷却辊表面上也可以恒定地形成熔池。 \n\n [0130] 在传统的带坯连铸机中,通过中间包将熔体进给到冷却辊上,该中间包被设置为将熔体暂时保持在此处,并且所形成的熔池的大小由熔体的进料口之间的间隙限定。 中间包和冷却辊表面。 因此,在常规方法中,中间包的熔体进料口与冷却辊表面之间的间隙可以不大于约0.5mm。 而且,在现有技术中,没有人通过倾斜中间包的熔体引导表面来实现加速熔体流动的想法,因此,通常将熔体通过中间包的熔体供给口供给到冷却辊的表面上。 低流速。 因此,常规的带材连铸机不能在熔体和辊表面之间实现足够的接触程度。 \n\n [0131] 如上所述,根据本发明的各种优选实施例,熔体与辊表面之间的接触程度显着增加,从而使大气中不必要的气体吸收最小化到熔体与辊表面之间的间隙中,并进一步减少了 稳定熔体的运动动量。 结果,可以使所得快速凝固的合金的厚度和冷却速率均匀。 因此,与常规的带钢铸造方法相比,可以获得质量更均匀的快速凝固的合金组织。 在现有技术中,没有一种烧结磁体的快速凝固合金能像通过本发明的一个优选实施例获得的快速凝固合金那样均匀地组织。 然而,本发明人发现,甚至用于烧结磁体的材料合金也优选具有高度均匀的合金结构以实现优异的磁性能(例如,高矫顽力)。 \n\n [0132] 但是,在制造用于烧结磁体的快速凝固合金时,如果管状孔的出口的开口面积超过约0.6厘米 2 ,那么熔体进料速率将太高而无法在冷却辊上不断形成熔体熔池。 在这种情况下,熔体可能会飞溅并且无法按预期进行淬火。 但是,如果管状孔的出口的开口面积小于约0.03厘米 2 ,那么每单位时间的熔体加工速率将不足1.5 kg / min,生产率将大大下降。 \n\n [0133] 考虑到这些考虑,在制造用于烧结磁体的快速凝固的合金时,直管状孔的出口优选具有约0.03cm的开口面积。 2  到约0.6厘米 2 ,更优选约0.07厘米 2  到约0.4厘米 2 。 \n\n [0134] 应当注意的是,通过在枝条的末端周围提供许多管状孔,可以提高每单位时间的熔体加工速率。 \n\n [0135] 关于熔体淬火机中的射钉的具体布置(即,角度α,β和γ的优选范围),已经针对纳米复合磁体描述的条件也适用于用于烧结磁体的快速凝固的合金。 \n\n [0136] 上述根据本发明的各种优选实施方式的设备和方法显着增加了熔融合金与冷却辊表面之间的接触程度,并且高度均匀地淬火了熔体,从而提供了具有甚至更均匀的快速凝固的合金。 任何类型磁铁的结构。 无论要处理的材料合金的具体组成如何,或者要获得的磁体是粘结磁体还是烧结磁体,都可以实现这些有益效果。 \n\n [0137] 而且,在根据本发明的各个优选实施例的设备和方法中,与实施例相比,可以增加射出端与冷却辊表面之间的距离,并且可以更加恒定地形成熔池。 与传统的带轮连铸机。 因此,即使相对厚的快速凝固的合金也可以恒定地形成。 \n\n [0138] 此外,由于枝条的端部与冷却辊的表面之间的距离增加,所以可以避免由于枝条的端部与坯体的表面之间的间隙的堵塞而引起的熔体淬火过程的意外停止。 冷却辊,在枝条末端周围有凝固的熔体部分。 特别是当具有至少一个管状孔的装满部件可更换时,如图1和2所示。 如图4A至4C所示,仅需更换浇铸件即可使熔体淬火机长时间正常运行。 240  只是,不是拍摄 24  全部。 \n\n [0139] 此外,根据本发明的优选实施例,熔体以相对较高的速度(例如,约0.2m / s或更高)在倾斜的枝条的引导表面上流下。 因此,与常规的带铸工艺相比,熔体在被浇铸到枝条上之后,可以在更短的时间内到达冷却辊的表面。 因此,可以显着降低枝条上熔体温度的降低。 因此,即使熔体具有相对较低的温度,熔体仍可以在任何期望的温度下进给到冷却辊上。 另外,由于熔体在枝条上快速流动,因此可以使熔体的不希望的氧化最小化,并且炉渣和其他碎屑不太可能收集在枝条中。 当被氧化时,熔体将具有增加的粘度以可能堵塞管状孔。 然而,根据本发明的优选实施例,熔体可以在倾斜的引导表面上快速流下,可以将由于氧化引起的熔体粘度的不期望的增加最小化,并且很少发生管孔的堵塞。 \n\n [0140] 在下文中,将描述根据本发明的优选实施方式的用于制造烧结磁体的方法的具体实例。 \n\n 例子 \n\n [0141] 在本发明优选实施方案的以下具体实施例中,使用如图1所示的熔体淬火机。 也使用了3。 具体而言,首先,称量纯度为约99.5%以上的材料Nd,Dy,B,C和Fe,使得混合物的总重量为约4kg,合金组成为Nd。 31.1 镝 1.0 乙 1.1 C 3.0 铁 63.9  (下标表示重量百分比)。 然后,将混合物注入氧化铝坩埚中。 \n\n [0142] 接下来,通过在氧化铝坩埚中的高频加热处理使原料合金熔融,从而获得具有上述组成的熔融合金。 熔融合金的温度为约1500℃。此后,使氧化铝坩埚倾斜以将熔融合金整顿到射钉组件的引导表面上。 \n\n [0143] 具有三个管状孔(每个直径约4毫米)的可更换部件安装在导向表面的底部。 因此,在引导表面上流下的熔体通过管状孔汇聚,从而被馈送到在管状孔下方旋转的冷却辊的表面上。 \n\n [0144] 在伪管状构件开始生长之前,芽的管状孔的长度约为10mm。 管状孔的端部与冷却辊表面之间的距离最初约为10毫米。 从管状孔排出的熔体与设置在压力为约50kPa的Ar气氛中的冷却辊接触,并迅速冷却并固化。 冷却辊以约2m / s的圆周速度旋转。 角度α,β和γ分别限定为大约5度,大约20度和大约2度。 当熔体淬火过程达到稳定状态时,伪管状构件已长到约7mm的长度。 结果,管状孔的有效长度达到约17mm。 然后,伪管状构件的端部与冷却辊的表面之间的距离为约1.5mm至约3.0mm。 \n\n [0145] 在该特定示例中,提供了三个管状孔。 因此,将三种熔体流送入冷却辊,并同时形成三种快速凝固的合金。 以这种方式获得的快速凝固的合金的铸造薄片具有约6mm至约10mm的宽度和约10mm至约300mm的长度。 \n\n [0146] 此后,从以这种方式获得的快速凝固的合金中任意选择100个铸造薄片,并测量其厚度。 结果,那些浇铸薄片的平均厚度为约230μm,标准偏差为约20μm。 铸造薄片中的晶粒具有约0.5μm至约7μm的短轴尺寸和约3μm至约70μm的长轴尺寸。 浇铸的薄片具有合金结构,其中主R 2 铁 14 B相被厚度约0.5μm至约7.0μm的富R相包围。 富R相的均匀分散通过电子束微量分析仪EPM-810(岛津制作所制)确认。 \n\n [0147] 将流延的薄片粗粉碎,然后通过已知技术细粉碎,从而获得平均粒径为约3.0μm的细粉碎粉末。 然后,将细粉碎的粉末在强度为约1.20MA / m的磁场下压实,然后烧结。 压实压力为约100MPa,并且在约1,060℃下进行烧结过程约3小时。 将烧结体在约600℃下进行时效处理约1小时。 以这种方式获得的永磁体的磁性能示于表3中。 \n\n 比较例 \n\n [0148] 通过使用图1所示的机器,制备具有与上述具体示例相同的合金组成的快速凝固的合金。 与图2所示的实施例在几乎相同的条件下不同,只是将熔体从射料直接通过无管孔送入冷却辊。 在该比较例中,枝条的端部与冷却辊的表面之间的距离为约10mm,并且角度α和β分别为约20度和约10度。 \n\n [0149] 以这种方式,获得了具有约20mm至约30mm的宽度和约10mm至约300mm的长度的快速凝固的合金的铸造薄片。 此后,从以这种方式获得的快速凝固的合金中任意选择100个铸造薄片,并测量其厚度。 结果,那些浇铸薄片的平均厚度为约240μm,标准偏差为约64μm。 \n\n [0150] 铸造薄片中的晶粒具有约0.5μm至约20μm的短轴尺寸和约10μm至约300μm的长轴尺寸。 浇铸的薄片具有合金结构,其中主R 2 铁 14 B相被厚度约为2.0μm或更小的富R相包围。 \n\n [0151] 还对铸造薄片进行粉碎,然后在与上述具体实例相同的条件下烧结,从而获得烧结磁体。 下表3还显示了所得永磁体的磁性能: \n\n [0152] \n\n    表3  Br(BH)  最高  H J  (T)(千焦/米 3 )  (MA /米)  例 1.28 353.2 1.61  比较  1.27 335.4 1.24  例 \n\n [0153] 从表3所示的结果可以看出,本发明的优选实施方式的具体例的最大能量乘积和矫顽力高于比较例。 这些结果表明,在本发明的优选实施方式的具体实例中获得了高度均匀的磁性合金结构,这是因为熔融合金和冷却辊之间的接触程度显着增加,使得熔融合金必须已经足够均匀地淬火了。  。 \n\n [0154] 根据上述本发明的各种优选实施例,即使在以相对较高的速度旋转的冷却辊上也可以恒定地形成熔池。 因此,本发明有效地有助于大量生产快速凝固的合金,这些合金不仅用于纳米复合磁体,而且用于其他类型的磁体。 \n\n [0155] 尽管已经针对本发明的优选实施例描述了本发明,但是对于本领域技术人员而言显而易见的是,可以以多种方式修改所公开的发明,并且可以采用除了上述具体描述的实施例之外的许多实施例。 因此,所附权利要求书旨在覆盖落入本发明的真实精神和范围内的本发明的所有修改。');
INSERT INTO `os_patent_instruction_text` VALUES (12995, 22824, '【0001】\n\n【発明の属する技術分野】\n\n本発明は、絶縁性に優れた無機物被膜が表面に形成されてなる希土類系永久磁石およびその簡易な製造方法に関する。\n\n【0002】\n\n【従来の技術】\n\nNd-Fe-B系永久磁石に代表されるR-Fe-B系永久磁石やSm-Fe-N系永久磁石に代表されるR-Fe-N系永久磁石などの希土類系永久磁石は、資源的に豊富で安価な材料が用いられ、かつ、高い磁気特性を有していることから、特にR-Fe-B系永久磁石は今日様々な分野で使用されており、自動車用モータや家電製品用モータなどへの適用に対する需要も増加している。\n\n希土類系永久磁石を各種のモータに適用する場合、耐食性の確保もさることながら、磁石に発生する渦電流を防止するための対策を講じる必要がある。磁石に発生する渦電流を防止する方法としては、例えば、絶縁性被膜を磁石の表面に形成する方法がよく知られており、絶縁性被膜としてポリイミド樹脂被膜を磁石の表面に形成する方法は、下記の特許文献1などに記載されている。\n\n【0003】\n\n希土類系永久磁石の表面にポリイミド樹脂被膜を形成することで、絶縁性を確保して磁石に発生する渦電流を防止する方法は、優れた方法として評価されている。しかしながら、ポリイミド樹脂被膜は有機物被膜であるので、自動車用モータのように百数十℃といった高温に曝されるモータに、ポリイミド樹脂被膜が表面に形成されてなる磁石を適用した場合、被膜軟化が起こることで絶縁性が破壊されることがあるといった問題がある。また、ポリイミド樹脂被膜を磁石の表面に形成する方法として湿式法(スプレー塗装法など)を採用した場合には極性の高い有機溶媒を必要とするので作業環境に負荷が大きいといった問題あり、乾式法(蒸着法)を採用した場合には多額の設備投資が必要となり、作業コストが高くなるといった問題がある。\n\n【0004】\n\n【特許文献1】\n\n特開平9-180922号公報\n\n【0005】\n\n【発明が解決しようとする課題】\n\nそこで本発明は、絶縁性に優れた無機物被膜が表面に形成されてなる希土類系永久磁石およびその簡易な製造方法を提供することを目的とする。\n\n【0006】\n\n【課題を解決するための手段】\n\n本発明者らは上記の点に鑑みて種々の検討を行った結果、リンとカルシウムを構成成分として含む無機物被膜が、絶縁性に優れることを知見した。\n\n【0007】\n\n上記の知見に基づいてなされた本発明の絶縁性希土類系永久磁石は、請求項1記載の通り、耐食性被膜である金属被膜としてのブラスト処理されたニッケルめっき被膜または銅めっき被膜を介して、リンとカルシウムを構成成分として含む無機物被膜としてのヒドロキシアパタイト被膜が表面に形成されてなることを特徴とする。\n\n  また、請求項2記載の絶縁性希土類系永久磁石は、請求項1記載の絶縁性希土類系永久磁石において、無機物被膜が金属被膜の表面にまで略到達した微細溝により分断されてアイランド状に表面形成された長径が10μm〜100μmの被膜片の集合体からなることを特徴とする。\n\n  また、請求項3記載の絶縁性希土類系永久磁石は、請求項1または2記載の絶縁性希土類系永久磁石において、無機物被膜の膜厚が5μm〜50μmであることを特徴とする。\n\nまた、本発明の絶縁性希土類系永久磁石の製造方法は、請求項4記載の通り、耐食性被膜である金属被膜としてのブラスト処理されたニッケルめっき被膜または銅めっき被膜が表面に形成されてなる希土類系永久磁石を、少なくともリン酸水素イオンとカルシウムイオンを含む被膜形成処理液に浸漬することで、耐食性被膜の表面にリンとカルシウムを構成成分として含む無機物被膜としてのとしてのヒドロキシアパタイト被膜を形成することを特徴とする。\n\n  また、請求項5記載の製造方法は、請求項4記載の製造方法において、耐食性被膜の表面に予めヒドロキシアパタイト被膜の形成起点となる反応場を導入しておくことを特徴とする。\n\nまた、請求項6記載の製造方法は、請求項4または5記載の製造方法においえ、リン酸水素イオンとカルシウムイオンを含む被膜形成処理液が擬似体液であることを特徴とする。\n\n  また、請求項7記載の製造方法は、請求項4乃至6のいずれかに記載の製造方法において、耐食性被膜である金属被膜としてのブラスト処理されたニッケルめっき被膜または銅めっき被膜が表面に形成されてなる希土類系永久磁石を、被膜形成処理液に1日〜3日浸漬した後、処理液から取り出して乾燥する工程を複数回繰り返すことで、金属被膜の表面にまで略到達した微細溝により分断されてアイランド状に表面形成された長径が10μm〜100μmで膜厚が5μm〜50μmの被膜片の集合体からなる無機物被膜を形成することを特徴とする。\n\nまた、本発明の希土類系永久磁石への絶縁性付与方法は、請求項8記載の通り、耐食性被膜である金属被膜としてのブラスト処理されたニッケルめっき被膜または銅めっき被膜を介して、リンとカルシウムを構成成分として含む無機物被膜としてのヒドロキシアパタイト被膜を表面に形成することを特徴とする。\n\nまた、本発明の物品は、請求項9記載の通り、リンとカルシウムを構成成分として含む無機物被膜としてのヒドロキシアパタイト被膜が表面に形成されてなる、基材がセラミックス、金属、磁性体から選択される物品(希土類系永久磁石を除く)であって、無機物被膜が基材の表面にまで略到達した微細溝により分断されてアイランド状に表面形成された長径が10μm〜100μmの被膜片の集合体からなることを特徴とする。\n\n【0008】\n\n【発明の実施の形態】\n\n本発明の絶縁性希土類系永久磁石は、直接的にまたは耐食性被膜を介して、リンとカルシウムを構成成分として含む無機物被膜が表面に形成されてなることを特徴とするものである。リンとカルシウムを構成成分として含む無機物被膜は、ポリイミド樹脂被膜のような有機物被膜と異なり、高温に曝されても被膜軟化するといったことがなく、また、簡易に形成することができる。リンとカルシウムを構成成分として含む無機物被膜の一例であるヒドロキシアパタイト被膜は、生体適合性に優れた被膜であり、生体インプラント材料に適用することができることは、特開平6-293505号公報や特開2003-62061号公報に記載の通りである。しかしながら、このような無機物被膜を絶縁性被膜として希土類系永久磁石の表面に直接的にまたは耐食性被膜を介して形成することはこれまでに報告された例はない。\n\n【0009】\n\nリンとカルシウムを構成成分として含む無機物被膜としては、例えば、第一リン酸カルシウム{Ca(H2PO4)2}、第二リン酸カルシウム(CaHPO4)、第三リン酸カルシウム{Ca3(PO4)2}、リン酸四カルシウム{Ca4(PO4)2O}、リン酸八カルシウム{Ca8H2(PO4)6}、ヒドロキシアパタイト{Ca10(PO4)6(OH)2}、アモルファスリン酸カルシウムなどからなる被膜が挙げられる。リンとカルシウムを構成成分として含む無機物被膜は、リンとカルシウムを構成成分として含むものであれば必ずしも単一組成からなるものである必要はなく、また、結晶水を含むものであってもよい。無機物被膜の膜厚は、磁石に十分な絶縁性を付与する観点と磁石の有効体積を確保する観点から、5μm〜50μmとすることが望ましい。\n\n【0010】\n\nリンとカルシウムを構成成分として含む無機物被膜として好適な被膜としては、ヒドロキシアパタイト被膜が挙げられる。ヒドロキシアパタイト被膜は、ヒドロキシアパタイトの構成元素の一部が、他の元素に置換されていたり欠損していたり、また、基の一部が他の基に置換されていたりするものであってもよい。具体的には、例えば、ヒドロキシアパタイトの構成元素の一部が、NaやKなどの周期律表第I族の元素、MgやZnなどの周期律表第II族の元素、FやClなどの周期律表第VII族の元素、さらには希土類元素に置換されていたり欠損していたりするものや、また、基の一部がCO32-、HPO42-、SO42-などの基に置換されていたりするものが挙げられる。これらの元素や基は、ヒドロキシアパタイト被膜を形成するための被膜形成処理液に含まれる元素や基に由来する。\n\n【0011】\n\nリンとカルシウムを構成成分として含む無機物被膜は、当該被膜が優れた耐久性や化学的安定性を有するものとするためには、カルシウムイオン(Ca2+)を0.02mM〜25mM、リン酸水素イオン(HPO42-)を0.01mM〜10mM含み、pHが6.0〜8.0である被膜形成処理液を用いて形成することが望ましく、カルシウムイオンを0.2mM〜20mM、リン酸水素イオンを0.1mM〜8mM含み、pHが6.8〜7.6である被膜形成処理液を用いて形成することがより望ましく、カルシウムイオンを1.2mM〜5mM、リン酸水素イオンを0.5mM〜2mM含み、pHが7.2〜7.5である被膜形成処理液を用いて形成することがさらに望ましい。中でも、擬似体液は、ヒドロキシアパタイト被膜を形成するために特に望ましい被膜形成処理液であり、NaCl,NaHCO3,KCl,K2HPO4,MgCl2,CaCl2,Na2SO4,HCl,トリスヒドロキシメチルアミノメタンから組成されるものである(擬似体液は自体公知であるが必要であれば特開平6-293505号公報を参照のこと)。\n\n【0012】\n\nリンとカルシウムを構成成分として含む無機物被膜は、希土類系永久磁石の表面に直接的に形成されていてもよいが、耐食性被膜を介して形成されていることが望ましい。その理由としては以下のような理由が挙げられる。\n\nまず、例えば、ヒドロキシアパタイト被膜は、上記の通り、NaCl,NaHCO3,KCl,K2HPO4,MgCl2,CaCl2,Na2SO4,HCl,トリスヒドロキシメチ\n\nルアミノメタンから組成される擬似体液を用いて形成することができるが、ヒドロキシアパタイト被膜を希土類系永久磁石の表面に直接的に形成するために、このような塩素イオンや硫酸イオンを含む溶液に磁石を浸漬した場合、磁石の腐食が起こり、無視することができない磁気特性の劣化を引き起こす恐れがあるからである。\n\nまた、リンとカルシウムを構成成分として含む無機物被膜は、被膜が形成される基材との間で熱膨張係数および/または弾性定数に無視できない違いがあると、その違いによって被膜にクラックが発生して被膜の剥離現象を引き起こす恐れがある。こうした現象を防止して、無機物被膜を優れた密着性のもとに基材の表面に形成するためには、被膜は、基材の表面にまで略到達した微細溝により分断されてアイランド状に表面形成された長径が10μm〜100μmの被膜片の集合体からなることが望ましいところ(被膜片の長径とは対向する両端2点間の距離のうち最も長い距離を意味する:以下同じ)、このような無機物被膜を希土類系永久磁石の表面に直接的に形成した場合、微細溝の近辺から磁石が腐食する恐れがあるからである。\n\n【0013】\n\nリンとカルシウムを構成成分として含む無機物被膜を、希土類系永久磁石の表面に耐食性被膜を介して形成する場合、耐食性被膜は磁石に耐食性を付与することができるものであればいかなる被膜であってもよい。また、耐食性被膜は単層被膜であってもよいし、積層被膜であってもよい。耐食性被膜としては、例えば、湿式めっき法や乾式めっき法で形成される金属被膜が挙げられるが、中でも、大量生産に適したニッケルめっき被膜や銅めっき被膜を好適に採用することができる。耐食性被膜の膜厚は、磁石に十分な耐食性を付与する観点と磁石の有効体積を確保する観点から、5μm〜50μmとすることが望ましい。\n\n【0014】\n\nリンとカルシウムを構成成分として含む無機物被膜を、希土類系永久磁石の表面に耐食性被膜を介して形成する方法としては、例えば、耐食性被膜が表面に形成されてなる希土類系永久磁石を、上記のような、リン酸水素イオンとカルシウムイオンを含む被膜形成処理液に浸漬する方法が挙げられる。\n\n【0015】\n\nリンとカルシウムを構成成分として含む無機物被膜がヒドロキシアパタイト被膜である場合、耐食性被膜の表面に予めヒドロキシアパタイト被膜の形成起点となる反応場を導入しておくことで、被膜形成を効率よく行うことができる。ここで、耐食性被膜の表面へのヒドロキシアパタイト被膜の形成起点となる反応場の導入とは、ヒドロキシアパタイト結晶の析出を促進するためのサイトを耐食性被膜の表面に導入することを意味し、例えば、ヒドロキシアパタイトの核を耐食性被膜の表面に付着させるための核生成用ガラス粉末と、耐食性被膜が表面に形成されてなる希土類系永久磁石を擬似体液中で接触させる工程によって行うことができる。なお、核生成用ガラス粉末としては、例えば、Na2OまたはCaOとSiO2を主な組成として含むものが挙げられる(必要であれば特開平6-293505号公報を参照のこと)。\n\n【0016】\n\n耐食性被膜である金属被膜の表面にリンとカルシウムを構成成分として含む無機物被膜を形成する場合、金属被膜の表面を予めブラスト処理しておくことで、無機物被膜を優れた密着性のもとに金属被膜の表面に形成することができる。ブラスト処理の条件は、例えば、金属被膜が表面に形成されてなる希土類系永久磁石を、ブラスト加工装置の投射口から80mm〜110mm隔てた状態に置き、投射材を投射圧0.1MPa〜0.5MPaで投射するといったものでよい。\n\n【0017】\n\nまた、リンとカルシウムを構成成分として含む無機物被膜を優れた密着性のもとに耐食性被膜の表面に形成するためには、耐食性被膜が表面に形成されてなる希土類系永久磁石を、被膜形成処理液に1日〜3日浸漬した後、処理液から取り出して乾燥する工程を複数回繰り返すことで、金属被膜の表面にまで略到達した微細溝により分断されてアイランド状\n\nに表面形成された長径が10μm〜100μmで膜厚が5μm〜50μmの被膜片(アスペクト比は好適には2以下である)の集合体からなる無機物被膜を形成することが望ましい。\n\n【0018】\n\n本発明が適用される希土類系永久磁石における希土類元素(R)は、Nd、Pr、Dy、Ho、Tb、Smのうち少なくとも1種、あるいはさらに、La、Ce、Gd、Er、Eu、Tm、Yb、Lu、Yのうち少なくとも1種を含むものが望ましい。\n\nまた、通常はRのうち1種をもって足りるが、実用上は2種以上の混合物(ミッシュメタルやジジムなど)を入手上の便宜などの理由によって使用することもできる。\n\nさらに、Al、Ti、V、Cr、Mn、Bi、Nb、Ta、Mo、W、Sb、Ge、Sn、Zr、Ni、Si、Zn、Hf、Gaのうち少なくとも1種を添加することで、保磁力や減磁曲線の角型性の改善、製造性の改善、低価格化を図ることが可能となる。また、Feの一部をCoで置換することによって、得られる磁石の磁気特性を損なうことなしに温度特性を改善することができる。\n\nなお、本発明が適用される希土類系永久磁石は、焼結磁石であってもボンド磁石であってもよい。\n\n【0019】\n\nリンとカルシウムを構成成分として含む無機物被膜が表面に形成されてなる物品であって、無機物被膜が基材の表面にまで略到達した微細溝により分断されてアイランド状に表面形成された長径が10μm〜100μmの被膜片の集合体からなる物品は、希土類系永久磁石はもちろんのことその他の物品でもこれまでに報告された例はない。従って、希土類系永久磁石以外の物品も本発明の一部を構成する。例えば、アルミナやジルコニアなどのセラミックス、チタン合金などの金属、磁気マーカーなどの磁性体からなる基材の表面にこのような無機物被膜を形成することで、生体適合性に優れるとともに、被膜と基材との間で熱膨張係数および/または弾性定数に無視できない違いがあったとしても、その違いによって被膜にクラックが発生して被膜の剥離現象を引き起こすといったことがない生体材料(生体インプラント材料や検査材料など)となる。\n\n【0020】\n\n【実施例】\n\n本発明を以下の実施例によってさらに詳細に説明するが、本発明はこれに限定されるものではない。なお、以下の実施例は、例えば、米国特許4770723号公報や米国特許4792368号公報に記載されているようにして、公知の鋳造インゴットを粉砕し、微粉砕後に成形、焼結、熱処理、表面加工を行うことによって得られた14Nd-79Fe-6B-1Co組成(at%)の縦11.5mm×横7.0mm×厚さ1.5mm寸法の平板状焼結磁石(以下、磁石体試験片と称する)を用いて行った。\n\n【0021】\n\n磁石体試験片の表面に、以下の3種類のニッケルめっき浴を用いて順次ニッケルめっき被膜を形成し(ニッケルめっき被膜の総膜厚は20μm)、その表面をブラスト処理した{ニッケルめっき被膜が表面に形成されてなる磁石体試験片を、ブラスト加工装置の投射口から90mm隔てた状態に置き、投射材(アランダムA#180:新東ブレーター社製でJIS粒度#180相当)を投射圧0.2MPaで投射}。\n\n【0022】\n\n\n\n【0023】\n\n\n\n【0024】\n\n\n\n【0025】\n\n次に、ニッケルめっき被膜が表面に形成されてなる磁石体試験片10個を、核生成用ガラス粉末4gとともに表1に記載の擬似体液A30mLに浸漬し、36.5℃の恒温槽内に2日間放置した後、擬似体液Aから取り出して自然乾燥することで、ニッケルめっき被膜\n\nの表面にヒドロキシアパタイト被膜の形成起点となる反応場が導入されてなる磁石体試験片を得た。なお、核生成用ガラス粉末は、乳鉢を使って表2に記載の5種類のガラス原料を微粉末化し均一に混合した後、白金ルツボに入れて1450℃で2時間溶融し、溶融物を鉄板に流して急冷してガラス化し、ボールミルを使って粉砕し、粉砕したガラスを分級用の篩を使って粒径が100μm〜600μmの範囲にあるものを取得して洗浄し、自然乾燥することで作製した(成分組成は表2を参照のこと)。\n\n【0026】\n\n以上のようにして得た、ニッケルめっき被膜の表面にヒドロキシアパタイト被膜の形成起点となる反応場が導入されてなる磁石体試験片10個を、表1に記載の擬似体液B30mLに浸漬し、36.5℃の恒温槽内に2日間放置した後、磁石体試験片を擬似体液Bから取り出し、蒸留水で洗浄後、1日間自然乾燥した。引き続き、新たな擬似体液B30mLを用いた同様の2日間の浸漬処理と蒸留水での洗浄と1日間の自然乾燥処理を行い、さらに、新たな擬似体液B30mLを用いた同様の2日間の浸漬処理を行った後、磁石体試験片を擬似体液Bから取り出し、蒸留水で洗浄してから自然乾燥することで、ニッケルめっき被膜の表面にヒドロキシアパタイト被膜を形成した。ニッケルめっき被膜の表面に形成された被膜がヒドロキシアパタイト被膜であることは、走査型電子顕微鏡、二次X線解析装置(EDX)、薄膜X線回折装置を用いて確認した。また、表面付近の断面観察を電子線マイクロアナライザー(EPMA)を用いて行ったところ、ヒドロキシアパタイト被膜の膜厚は10μm〜15μmであることがわかった。任意に選択した部分の2次電子像を図1に、ニッケルX線像を図2に示す。図1と図2から明らかなように、ヒドロキシアパタイト被膜は、ニッケルめっき被膜の表面にまで略到達した微細溝により分断されてアイランド状に表面形成された長径が40μm程度でアスペクト比が2を超えない被膜片の集合体から構成されていることがわかった。このようなヒドロキシアパタイト被膜が形成されたのは、擬似体液Bへの最初の浸漬工程により被膜が形成され、乾燥工程により被膜に亀裂が導入されることで、微細溝により分断されてアイランド状に表面形成された被膜片が生成した後、浸漬工程と乾燥工程を交互に繰り返し行った際、被膜は当初に形成された被膜片の表面に優先的に形成され、当初に微細溝として存在した部分には被膜が形成されにくかったことによるものと考えられる。\n\n【0027】\n\n以上のようにして得た、ニッケルめっき被膜を介して、ヒドロキシアパタイト被膜が表面に形成されてなる磁石体試験片の直流耐電圧を端子間への500(V)印加時の表面抵抗率で評価したところ、1000〜∞(MΩ)という優れた絶縁性を示した。また、交流耐電圧を端子間に100〜500(V),10(mA)の条件で10秒間印加した時の耐電圧で評価したところ、少なくとも300(V)までは絶縁性を示した。\n\n【0028】\n\n【表1】\n\n\n\n【0029】\n\n【表2】\n\n\n\n【0030】\n\n【発明の効果】\n\n本発明によれば、絶縁性に優れた無機物被膜が表面に形成されてなる希土類系永久磁石およびその簡易な製造方法が提供される。\n\n【図面の簡単な説明】\n\n【図1】  実施例におけるEPMA2次電子像。\n\n【図2】  同、ニッケルX線像。', '【0001】\n\n技术领域\n\n本発明は、絶縁性に優れた無機物被膜が表面に形成されてなる希土類系永久磁石およびその簡易な製造方法に関する。\n\n【0002】\n\n发明背景\n\nNd-Fe-B系永久磁石に代表されるR-Fe-B系永久磁石やSm-Fe-N系永久磁石に代表されるR-Fe-N系永久磁石などの希土類系永久磁石は、資源的に豊富で安価な材料が用いられ、かつ、高い磁気特性を有していることから、特にR-Fe-B系永久磁石は今日様々な分野で使用されており、自動車用モータや家電製品用モータなどへの適用に対する需要も増加している。\n\n希土類系永久磁石を各種のモータに適用する場合、耐食性の確保もさることながら、磁石に発生する渦電流を防止するための対策を講じる必要がある。磁石に発生する渦電流を防止する方法としては、例えば、絶縁性被膜を磁石の表面に形成する方法がよく知られており、絶縁性被膜としてポリイミド樹脂被膜を磁石の表面に形成する方法は、下記の特許文献1などに記載されている。\n\n【0003】\n\n希土類系永久磁石の表面にポリイミド樹脂被膜を形成することで、絶縁性を確保して磁石に発生する渦電流を防止する方法は、優れた方法として評価されている。しかしながら、ポリイミド樹脂被膜は有機物被膜であるので、自動車用モータのように百数十℃といった高温に曝されるモータに、ポリイミド樹脂被膜が表面に形成されてなる磁石を適用した場合、被膜軟化が起こることで絶縁性が破壊されることがあるといった問題がある。また、ポリイミド樹脂被膜を磁石の表面に形成する方法として湿式法(スプレー塗装法など)を採用した場合には極性の高い有機溶媒を必要とするので作業環境に負荷が大きいといった問題あり、乾式法(蒸着法)を採用した場合には多額の設備投資が必要となり、作業コストが高くなるといった問題がある。\n\n【0004】\n\n专利文献1\n\n特開平9-180922号公報\n\n【0005】\n\n本发明要解决的问题\n\nそこで本発明は、絶縁性に優れた無機物被膜が表面に形成されてなる希土類系永久磁石およびその簡易な製造方法を提供することを目的とする。\n\n【0006】\n\n[解决问题的手段]\n\n本発明者らは上記の点に鑑みて種々の検討を行った結果、リンとカルシウムを構成成分として含む無機物被膜が、絶縁性に優れることを知見した。\n\n【0007】\n\n上記の知見に基づいてなされた本発明の絶縁性希土類系永久磁石は、請求項1記載の通り、被爆破的镀镍涂层或铜电镀薄膜作为金属涂层,其是耐腐蚀涂层を介して、リンとカルシウムを構成成分として含む無機物被膜羟基磷灰石涂料为が表面に形成されてなることを特徴とする。\n\n魔鬼索赔2記載の絶縁性希土類系永久磁石は、請求項1記載の絶縁性希土類系永久磁石において、無機物被膜が金属被膜の表面にまで略到達した微細溝により分断されてアイランド状に表面形成された長径が10μm〜100μmの被膜片の集合体からなることを特徴とする。\n\n魔鬼索赔3記載の絶縁性希土類系永久磁石は、請求項1或者2記載の絶縁性希土類系永久磁石において、無機物被膜の膜厚が5μm〜50μmであることを特徴とする。\n\nまた、本発明の絶縁性希土類系永久磁石の製造方法は、請求項4記載の通り、耐食性被膜爆破镀镍涂层或铜电镀涂层作为金属涂层が表面に形成されてなる希土類系永久磁石を、至少リン酸水素イオンとカルシウムイオンを含む被膜形成処理液に浸漬することで、耐食性被膜の表面にリンとカルシウムを構成成分として含む無機物被膜羟基磷灰石涂料为它的特征在于形成。\n\n魔鬼索赔5記載の製造方法は、請求項4記載の製造方法において、耐食性被膜の表面に予めヒドロキシアパタイト被膜の形成起点となる反応場を導入しておくことを特徴とする。\n\n还,6記載の製造方法は、請求項4要么5在制造方法中。\n\n魔鬼索赔7記載の製造方法は、請求項4要么6のいずれかに記載の製造方法において、耐食性被膜爆破镀镍涂层或铜电镀涂层作为金属涂层After the rare earth-based permanent magnet formed on the surface is immersed in the film formation treatment solution for 1 day to 3 days, the process of extracting and drying from the treatment solution is repeated a plurality of times to substantially reach the surface of the metal coating. It is characterized in that an inorganic substance coating is formed of a coating piece having a thickness of 5 μm to 50 μm and a large diameter of 5 μm to 50 μm, which is divided by a fine groove and surface-formed in一个岛屿。\n\nまた、本発明の希土類系永久磁石への絶縁性付与方法は、請求項8如前所述,被爆破的镀镍涂层或铜电镀薄膜作为金属涂层,其是耐腐蚀涂层を介して、リンとカルシウムを構成成分として含む無機物被膜羟基磷灰石涂料为を表面に形成することを特徴とする。\n\nまた、本発明の物品は、請求項9記載の通り、リンとカルシウムを構成成分として含む無機物被膜羟基磷灰石涂料为が表面に形成されてなる,基板选自陶瓷,金属和磁性材料物品(希土類系永久磁石を除く)であって、無機物被膜が基材の表面にまで略到達した微細溝により分断されてアイランド状に表面形成された長径が10μm〜100μmの被膜片の集合体からなることを特徴とする。\n\n【0008】\n\n发明内容\n\n本発明の絶縁性希土類系永久磁石は、直接的にまたは耐食性被膜を介して、リンとカルシウムを構成成分として含む無機物被膜が表面に形成されてなることを特徴とするものである。リンとカルシウムを構成成分として含む無機物被膜は、ポリイミド樹脂被膜のような有機物被膜と異なり、高温に曝されても被膜軟化するといったことがなく、また、簡易に形成することができる。リンとカルシウムを構成成分として含む無機物被膜の一例であるヒドロキシアパタイト被膜は、生体適合性に優れた被膜であり、生体インプラント材料に適用することができることは、特開平6-293505号公報や特開2003-62061号公報に記載の通りである。しかしながら、このような無機物被膜を絶縁性被膜として希土類系永久磁石の表面に直接的にまたは耐食性被膜を介して形成することはこれまでに報告された例はない。\n\n【0009】\n\nリンとカルシウムを構成成分として含む無機物被膜としては、例えば、第一リン酸カルシウム{Ca(H2宝4的)2}、第二リン酸カルシウム(CaHPO4)、第三リン酸カルシウム{Ca3(PO.4的)2}、リン酸四カルシウム{Ca4(PO.4的)2O}、リン酸八カルシウム{Ca8H2(PO.4的)6}、ヒドロキシアパタイト{Ca10(PO.4的)6(哦)2}、アモルファスリン酸カルシウムなどからなる被膜が挙げられる。リンとカルシウムを構成成分として含む無機物被膜は、リンとカルシウムを構成成分として含むものであれば必ずしも単一組成からなるものである必要はなく、また、結晶水を含むものであってもよい。無機物被膜の膜厚は、磁石に十分な絶縁性を付与する観点と磁石の有効体積を確保する観点から、5μm〜50μmとすることが望ましい。\n\n【0010】\n\nリンとカルシウムを構成成分として含む無機物被膜として好適な被膜としては、ヒドロキシアパタイト被膜が挙げられる。ヒドロキシアパタイト被膜は、ヒドロキシアパタイトの構成元素の一部が、他の元素に置換されていたり欠損していたり、また、基の一部が他の基に置換されていたりするものであってもよい。具体的には、例えば、ヒドロキシアパタイトの構成元素の一部が、NaやKなどの周期律表第I族の元素、MgやZnなどの周期律表第II族の元素、FやClなどの周期律表第VII族の元素、さらには希土類元素に置換されていたり欠損していたりするものや、また、基の一部がCO32-HPO.42-, 所以42-などの基に置換されていたりするものが挙げられる。これらの元素や基は、ヒドロキシアパタイト被膜を形成するための被膜形成処理液に含まれる元素や基に由来する。\n\n【0011】\n\nリンとカルシウムを構成成分として含む無機物被膜は、当該被膜が優れた耐久性や化学的安定性を有するものとするためには、カルシウムイオン(Ca2+)を0.02mM〜25mM、リン酸水素イオン(HPO42-)を0.01mM〜10mM含み、pHが6.0〜8.0である被膜形成処理液を用いて形成することが望ましく、カルシウムイオンを0.2mM〜20mM、リン酸水素イオンを0.1mM〜8mM含み、pHが6.8〜7.6である被膜形成処理液を用いて形成することがより望ましく、カルシウムイオンを1.2mM〜5mM、リン酸水素イオンを0.5mM〜2mM含み、pHが7.2〜7.5である被膜形成処理液を用いて形成することがさらに望ましい。中でも、擬似体液は、ヒドロキシアパタイト被膜を形成するために特に望ましい被膜形成処理液であり、NaCl,NaHCO3,KCl,K2HPO.4,mgcl.2Cacl.2,Na.2所以4,HCl,トリスヒドロキシメチルアミノメタンから組成されるものである(擬似体液は自体公知であるが必要であれば特開平6-293505号公報を参照のこと)。\n\n【0012】\n\nリンとカルシウムを構成成分として含む無機物被膜は、希土類系永久磁石の表面に直接的に形成されていてもよいが、耐食性被膜を介して形成されていることが望ましい。その理由としては以下のような理由が挙げられる。\n\nまず、例えば、ヒドロキシアパタイト被膜は、上記の通り、NaCl,NaHCO3,KCl,K2HPO.4,mgcl.2Cacl.2,Na.2所以4,HCl,トリスヒドロキシメチ\n\nルアミノメタンから組成される擬似体液を用いて形成することができるが、ヒドロキシアパタイト被膜を希土類系永久磁石の表面に直接的に形成するために、このような塩素イオンや硫酸イオンを含む溶液に磁石を浸漬した場合、磁石の腐食が起こり、無視することができない磁気特性の劣化を引き起こす恐れがあるからである。\n\nまた、リンとカルシウムを構成成分として含む無機物被膜は、被膜が形成される基材との間で熱膨張係数および/または弾性定数に無視できない違いがあると、その違いによって被膜にクラックが発生して被膜の剥離現象を引き起こす恐れがある。こうした現象を防止して、無機物被膜を優れた密着性のもとに基材の表面に形成するためには、被膜は、基材の表面にまで略到達した微細溝により分断されてアイランド状に表面形成された長径が10μm〜100μmの被膜片の集合体からなることが望ましいところ(被膜片の長径とは対向する両端2点間の距離のうち最も長い距離を意味する:以下同じ)、このような無機物被膜を希土類系永久磁石の表面に直接的に形成した場合、微細溝の近辺から磁石が腐食する恐れがあるからである。\n\n【0013】\n\n� 好的。また、耐食性被膜は単層被膜であってもよいし、積層被膜であってもよい。耐食性被膜としては、例えば、湿式めっき法や乾式めっき法で形成される金属被膜が挙げられるが、中でも、大量生産に適したニッケルめっき被膜や銅めっき被膜を好適に採用することができる。耐食性被膜の膜厚は、磁石に十分な耐食性を付与する観点と磁石の有効体積を確保する観点から、5μm〜50μmとすることが望ましい。\n\n【0014】\n\nリンとカルシウムを構成成分として含む無機物被膜を、希土類系永久磁石の表面に耐食性被膜を介して形成する方法としては、例えば、耐食性被膜が表面に形成されてなる希土類系永久磁石を、上記のような、リン酸水素イオンとカルシウムイオンを含む被膜形成処理液に浸漬する方法が挙げられる。\n\n【0015】\n\nリンとカルシウムを構成成分として含む無機物被膜がヒドロキシアパタイト被膜である場合、耐食性被膜の表面に予めヒドロキシアパタイト被膜の形成起点となる反応場を導入しておく事情で、被膜形成を効率よく行うことができる。ここで、耐食性被膜の表面へのヒドロキシアパタイト被膜の形成起点となる反応場の導入とは、ヒドロキシアパタイト結晶の析出を促進するためのサイトを耐食性被膜の表面に導入することを意味し、例えば、ヒドロキシアパタイトの核を耐食性被膜の表面に付着させるための核生成用ガラス粉末と、耐食性被膜が表面に形成されてなる希土類系永久磁石を擬似体液中で接触させる工程によって行うことができる。なお、核生成用ガラス粉末としては、例えば、Na2OまたはCaOとSiO2を主な組成として含むものが挙げられる(必要であれば特開平6-293505号公報を参照のこと)。\n\n【0016】\n\n耐食性被膜である金属被膜の表面にリンとカルシウムを構成成分として含む無機物被膜を形成する場合、金属被膜の表面を予めブラスト処理しておくことで、無機物被膜を優れた密着性のもとに金属被膜の表面に形成することができる。ブラスト処理の条件は、例えば、金属被膜が表面に形成されてなる希土類系永久磁石を、ブラスト加工装置の投射口から80mm〜110mm隔てた状態に置き、投射材を投射圧0.1MPa〜0.5MPaで投射するといったものでよい。\n\n【0017】\n\nまた、リンとカルシウムを構成成分として含む無機物被膜を優れた密着性のもとに耐食性被膜の表面に形成するためには、耐食性被膜が表面に形成されてなる希土類系永久磁石を、被膜形成処理液に1日〜3日浸漬した後、処理液から取り出して乾燥する工程を複数回繰り返すことで、金属被膜の表面にまで略到達した微細溝により分断されてアイランド状\n\nに表面形成された長径が10μm〜100μmで膜厚が5μm〜50μmの被膜片(アスペクト比は好適には2以下である)の集合体からなる無機物被膜を形成することが望ましい。\n\n【0018】\n\n本発明が適用される希土類系永久磁石における希土類元素(R)は、Nd、Pr、Dy、Ho、Tb、Smのうち少なくとも1種、あるいはさらに、La、Ce、Gd、Er、Eu、Tm、Yb、Lu、Yのうち少なくとも1種を含むものが望ましい。\n\n另外,尽管它通常足够的RS,两个或更多个混合物(例如混合金属,Dijim等)可以用于实际使用,但为方便起见。\n\nさらに、Al、Ti、V、Cr、Mn、Bi、Nb、Ta、Mo、W、Sb、Ge、Sn、Zr、Ni、Si、Zn、Hf、Gaのうち少なくとも1種を添加することで、保磁力や減磁曲線の角型性の改善、製造性の改善、低価格化を図ることが可能となる。また、Feの一部をCoで置換することによって、得られる磁石の磁気特性を損なうことなしに温度特性を改善することができる。\n\nなお、本発明が適用される希土類系永久磁石は、焼結磁石であってもボンド磁石であってもよい。\n\n【0019】\n\nリンとカルシウムを構成成分として含む無機物被膜が表面に形成されてなる物品であって、無機物被膜が基材の表面にまで略到達した微細溝により分断されてアイランド状に表面形成された長径が10μm〜100μmの被膜片の集合体からなる物品は、希土類系永久磁石はもちろんのことその他の物品でもこれまでに報告された例はない。従って、希土類系永久磁石以外の物品も本発明の一部を構成する。例えば、アルミナやジルコニアなどのセラミックス、チタン合金などの金属、磁気マーカーなどの磁性体からなる基材の表面にこのような無機物被膜を形成することで、生体適合性に優れるとともに、被膜と基材との間で熱膨張係数および/または弾性定数に無視できない違いがあったとしても、その違いによって被膜にクラックが発生して被膜の剥離現象を引き起こすといったことがない生体材料(生体インプラント材料や検査材料など)となる。\n\n【0020】\n\n【例子】\n\n本発明を以下の実施例によってさらに詳細に説明するが、本発明はこれに限定されるものではない。なお、以下の実施例は、例えば、米国特許4770723号公報や米国特許4792368号公報に記載されているようにして、公知の鋳造インゴットを粉砕し、微粉砕後に成形、焼結、熱処理、表面加工を行うことによって得られた14Nd-79Fe-6B-1Co組成(at%)の縦11.5mm×横7.0mm×厚さ1.5mm寸法の平板状焼結磁石(以下、磁石体試験片と称する)を用いて行った。\n\n【0021】\n\n磁石体試験片の表面に、以下の3種類のニッケルめっき浴を用いて順次ニッケルめっき被膜を形成し(ニッケルめっき被膜の総膜厚は20μm)、その表面をブラスト処理した{ニッケルめっき被膜が表面に形成されてなる磁石体試験片を、ブラスト加工装置の投射口から90mm隔てた状態に置き、投射材(アランダムA#180:新東ブレーター社製でJIS粒度#180相当)を投射圧0.2MPaで投射}。\n\n【0022】\n\n\n\n【0023】\n\n\n\n【0024】\n\n\n\n【0025】\n\n接下来,通过在表面上形成的镍镀膜形成的10个磁体试验片根据表1与4g成核玻璃粉末一起浸入30ml伪液A30ml中,并在36.5°处留在恒温器中C伪液体流体后2天,天然干燥,镀镍涂层\n\n将羟基磷灰石涂层的形成表面引入反应场的形成表面。另外,在含有砂浆中表2中所述的玻璃粉末的玻璃粉末之后,使用砂浆中描述的是微粉化和均匀混合,然后置于铂坩埚中并在1450℃下熔化2小时,并熔化是铁板,通过快速冷却并使用球磨机粉碎粉碎,碎玻璃被压碎,粒径在100μm至600μm的范围内,并进行洗涤,并用天然干燥洗涤。制备(称为组分组成的表2)。\n\n【0026】\n\n如上所述,在镀镍膜的表面引入具有形成羟基磷灰石涂层的反应场的10个磁体型试验条,并且表1中描述的伪液体流体B30ml浸入36.5。之后在去除磁体试验片之后从伪液体B离开磁体试验片,从伪液体B中除去磁体试验片,并用蒸馏水洗涤,然后自然干燥1天。随后,使用新的伪液体流体B. 30mL和用蒸馏水洗涤和洗涤一天的相同两天的浸渍处理,并通过新的伪液B30mL进一步2天浸渍处理。磁铁之后从伪液体B中除去体检测片,用蒸馏水洗涤,然后自然干燥,在镀镍膜的表面上形成羟基磷灰石涂层。使用扫描电子显微镜,二级X射线分析装置(EDX)和薄膜X射线衍射仪确认,即在镀镍膜的表面上形成的膜是羟基磷灰石涂层。此外,当使用电子束微量分析仪(EPMA)进行表面附近的横截面观察时,发现羟基磷灰石涂层的膜厚度为10μm至15μm。可选地选择的部分的二次电子图像如图2所示。图1中示出了镍X射线图像。从图1和图1中可以看出。如图2所示,羟基磷灰石涂层除以基本上达到镍镀膜表面的细槽,纵横比在约40μm的长度中超过2 40μm。发现它由薄膜的组装组成。形成这种羟基磷灰石涂层,因为通过第一浸渍步骤形成薄膜,并且通过干燥过程将裂缝引入薄膜中,并且微槽被细小槽划分。之后产生表面形成的涂布片,当浸渍步骤和干燥步骤交替地重复地重复地重复地重复地重复地,优先在最初形成的涂层件的表面上形成涂层,并且最初为细槽。认为薄膜未形成在薄膜的形成中。\n\n【0027】\n\n将500(V)施加到在表面上形成在表面上形成的磁体型试验片的表面的表面电阻率的评估,施加了在表面上形成的多变素试验片的DC抗性电压表面电阻率。然后,示出了优异的1000至∞(MΩ)的绝缘绝缘。另外,当通过在100至500(V)和10(V)和10(mA)的条件下通过100至500(V)和10(MA)的耐受电压评估AC耐电压时,显示绝缘性能至少300(v)。\n\n【0028】\n\n【表格1】\n\n\n\n【0029】\n\n[表2]\n\n\n\n【0030】\n\n【发明效果】\n\n根据本发明,提供了一种通过绝缘的无机涂层形成的稀土永磁体,以及其简单的制造方法。\n\n[简要描述;简介]\n\n【图1】EPMA二阶电子图像在该示例中。\n\n【图2】镍X射线图像。');
INSERT INTO `os_patent_instruction_text` VALUES (12996, 22825, '【技術分野】\n\n【0001】\n\n本発明は、微細結晶(ナノ結晶)組織を有する希土類磁石合金の製造方法および急冷装置に関する。\n\n【背景技術】\n\n【0002】\n\nボンド磁石に好適に用いられる希土類急冷磁石として、ナノコンポジット磁石が注目されている。ナノコンポジット磁石は、2種類以上の微細結晶相を含み、硬磁性相と軟磁性相とが磁気的に結合した磁石である。鉄基希土類系のナノコンポジット磁石は、Nd2Fe14B相を主相とする単相型磁石を凌駕する高性能を発揮することが理論的に予測されているが、現在のところ、そのように優れた性能を持つナノコンポジット磁石は量産されていない。\n\n【0003】\n\nナノコンポジット磁石などの急冷磁石を製造する方法としては、メルトスピニング法やストリップキャスティング法があり、これらの従来技術は、例えば特許文献1に開示されている。このような従来技術によって急冷磁石を製造する場合、まず、メルトスピニング法などの液体超急冷法によって合金溶湯から非晶質状態の急冷合金、または、非晶質相および微細結晶相の両方を含む急冷合金を作製する。その後、これらの急冷合金を加熱することによって結晶化を引き起こす工程が行われる。\n\n【0004】\n\nメルトスピニング法やストリップキャスティング法では、回転する冷却ロールの表面に合金溶湯を供給し、合金溶湯の熱を急速に奪い取ることによって急冷し、凝固することができる。このような冷却ロールを用いて合金溶湯を急冷する場合、急冷時における冷却速度は、合金溶湯の供給レートや急冷ロールの表面速度を制御することによって調節される。\n\n【0005】\n\n合金が急冷ロールに接触している時間は極めて短い。このため、まだ高温状態(例えば700〜900℃)にある合金が急冷ロールとの接触領域から連続的に吐き出されることになる。高温状態の合金は、帯状に長く延びた状態にあり、周囲の雰囲気ガスに熱を奪われながら室温程度まで更に冷えてゆく(自然放冷)。\n\n【0006】\n\n従来、硬磁性を担うNd2Fe14B相と軟磁性を担うα-Fe相や鉄基硼化物相とが均一かつ微細に分散した組織を有するナノコンポジット磁石は、特定組成の合金溶湯を急冷することによって非晶質相が大半を占める急冷凝固合金を作製した後、その急冷凝固合金を加熱し、結晶化させる方法で作製されていた。この場合、急冷工程における冷却レートを低下させると、急冷直後の合金中にα-Feなどが析出した結晶組織が形成され、その後の熱処理によって軟磁性のα-Feなどが粗大化してしまう問題があった。\n\n【0007】\n\nしかし、本出願人は、合金組成にTiを加えることにより、合金溶湯の冷却過程でα-Feの析出·成長を抑制し、それによってNd2Fe14B相を多く含む急冷合金を作製できることを見いだし、特許文献1および特許文献2に開示している。Tiの添加は、急冷工程における冷却レートを低下させることを可能にしたため、冷却レートが相対的に低く量産性に優れたストリップキャスティング法を用いてナノコンポジット磁石を製造することが可能になった。\n\n【0008】\n\n一方、本出願人は、急冷合金の組織構成を制御する技術として、合金溶湯を急冷することによって金属ガラス状態を形成した後、金属ガラス状態にある合金を加熱または冷却する方法を特許文献3に開示している。\n\n【特許文献1】特開2002-175908号公報\n\n【特許文献2】WO 02/39465 A1パンフレット\n\n【特許文献3】特開2001-319821号公報\n\n【発明の開示】\n\n【発明が解決しようとする課題】\n\n【0009】\n\nストリップキャスティング法による場合、ロールへの単位時間当たりの溶湯の供給量を一定に保つことが難しく、単位時間当たりの溶湯供給量が多くなりすぎると、冷却ロール\n\nでの冷却が不十分となる問題がある。冷却が不十分になると、Tiが添加された組成であっても、急冷合金中の結晶組織が粗大化し、結果として磁気特性に優れた鉄基希土類永久磁石を得ることが困難な場合がある。このような問題は、急冷合金が充分に冷却されない状態で装置の回収槽に堆積するような場合に顕著に生じる。\n\n【0010】\n\n一方、本発明者の一人が双ロール急冷法による急冷合金の作製を検討した結果、急冷速度を上げようとしてロール周速度を高くすると、急冷薄帯がロールに巻きついてしまい、薄帯を安定して得ることができなかった。その結果、急冷薄帯を安定して得るためにはストリップキャスティングよりも更に遅い急冷速度で急冷を行う必要があり、結果として磁気特性に優れた鉄基希土類永久磁石を得ることができないという問題もあった。\n\n【0011】\n\n本発明は、かかる諸点に鑑みてなされたものであり、その目的とするところは、ストリップキャスティング法や双ロール急冷法のように急冷速度が比較的低い急冷方法を用いても、最終的に磁気特性の優れたナノ結晶磁石が得られる希土類急冷磁石合金の製造方法および急冷装置を提供することにある。\n\n【課題を解決するための手段】\n\n【0012】\n\n本発明による希土類急冷磁石合金の製造方法は、希土類合金の溶湯を急冷する第1急冷工程と、前記第1急冷工程によって温度の低下が始まった合金を冷却媒体に接触させ、それによって前記合金を更に急冷する第2急冷工程とを含み、前記第2急冷工程は、前記冷却媒体として機能する冷却用ドラムを回転させながら前記ドラムの内壁に前記合金を接触させる工程を含む。\n\n【0013】\n\n好ましい実施形態において、前記第2急冷工程の前に結晶化を開始した合金を前記冷却用ドラムの内壁に接触させることにより、前記合金を更に急冷し、結晶相の粒成長を抑制する工程を含む。\n\n【0014】\n\n好ましい実施形態において、前記第2急冷工程は、前記冷却用ドラムを回転させることにより、前記合金を粉砕する工程を含む。\n\n【0015】\n\n好ましい実施形態において、前記第2急冷工程は、前記冷却用ドラムの回転による遠心力により、前記合金を前記冷却用ドラムの前記内壁に押圧する工程を含む。\n\n【0016】\n\n好ましい実施形態において、前記第1急冷工程の後、第2急冷工程を開始するまでの間、前記合金は他の部材に接触することなく雰囲気中を移動する。\n\n【0017】\n\n好ましい実施形態において、前記第1急冷工程は、回転する冷却ロールの表面に前記希土類合金の溶湯を接触させる工程を含む。\n\n【0018】\n\n好ましい実施形態において、前記合金が前記冷却ロールの表面から離れた後、前記冷却用ドラムの内壁に接触するまでの時間を0.2秒以下に調節する。\n\n【0019】\n\n好ましい実施形態において、前記第1急冷工程は、ガスアトマイズ法により、前記希土類合金の溶湯を急冷する工程を含む。\n\n【0020】\n\n好ましい実施形態において、前記第1急冷工程による結晶化で発現する前記結晶相は、Nd2Fe14B型結晶構造を有する硬磁性相である。\n\n【0021】\n\n好ましい実施形態において、前記第2急冷工程で前記冷却用ドラムの内壁に前記合金を接触させるときの前記合金の温度を500℃以上1000℃以下の範囲に設定する。\n\n【0022】\n\n本発明による希土類磁石の製造方法は、上記いずれかの希土類急冷磁石合金の製造方法によって希土類急冷磁石合金を作製する工程と、前記希土類急冷磁石合金に対する熱処理を行う工程とを包含する。\n\n【0023】\n\n好ましい実施形態において、前記熱処理を行うことにより、ナノ結晶磁石組織を完成する。\n\n【0024】\n\n好ましい実施形態において、前記ナノ結晶磁石組織は、硬磁性相と軟磁性相とが磁気的に結合したナノコンポジット磁石組織である。\n\n【0025】\n\n本発明の急冷装置は、希土類合金の溶湯を急冷する第1急冷手段と、前記第1急冷手段によって温度の低下が始まった合金が接触する第2急冷手段とを備えた急冷装置であって、前記第2急冷手段は、回転可能に支持された冷却用ドラムと、前記冷却用ドラムを回転させる駆動機とを備え、急冷工程に際して、回転する前記冷却用ドラムの内壁に前記合金を接触させることができるように前記第1急冷手段と前記第2急冷手段との配置関係が規定されている。\n\n【0026】\n\n好ましい実施形態において、前記冷却用ドラムの少なくとも内壁は、炭素鋼、W、Fe、Cu、Mo、Be、Al、および/または、これらの合金から形成されている。\n\n【0027】\n\n好ましい実施形態において、前記駆動機は、前記冷却用ドラムの回転による遠心力によって前記合金を前記冷却用ドラムの前記内壁に押圧することができるように前記冷却用ドラムを回転させる。\n\n【0028】\n\n好ましい実施形態において、前記冷却用ドラムは、前記合金を粉砕する粉砕機構を備えている。\n\n【0029】\n\n好ましい実施形態において、前記第1急冷手段は、回転する冷却ロールである。\n\n【0030】\n\n好ましい実施形態において、前記合金が前記冷却ロールの表面から離れた後、前記冷却用ドラムの内壁に接触するまでの時間が0.2秒以下になるように前記第1急冷手段と前記第2急冷手段との配置関係が規定されている。\n\n【発明の効果】\n\n【0031】\n\n本発明では、第1急冷工程の急冷の後、冷却用ドラムを用いた第2急冷工程の急冷を行う。このため、合金溶湯を急冷·凝固する過程において、結晶化反応が最も高速に進行する温度範囲で合金を効率的に急冷でき、結晶化のプロセスを最適に制御することが可能になる。その結果、第1急冷工程における急冷速度を相対的に低下させ、第1急冷工程で結晶化が始まったとしても、結晶化の初期状態の合金に対して第2急冷工程を行なうことにより、結晶粒の粗大化を抑制できるので、急冷速度が比較的低い量産性に優れた急冷装置を用いても、高性能な希土類急冷磁石合金を安定して生産できる。\n\n【発明を実施するための最良の形態】\n\n【0032】\n\n本発明による希土類急冷磁石合金の製造方法では、希土類合金の溶湯を急冷する第1急冷工程と、この第1急冷工程によって温度の低下が始まった合金を「冷却媒体」に接触させることによって前記合金を更に急冷する第2急冷工程とを行なう。本発明では、この第2急冷工程を行なうに際して、冷却媒体として機能する冷却用ドラムを回転させながら、冷却用ドラムの内壁に合金を接触させる。合金は遠心力により、ドラム内壁に押し付けられるため、効率的な抜熱が可能になる。\n\n【0033】\n\n本発明の好ましい実施形態では、第1急冷工程を行なうことにより、合金溶湯の温度を下げるため、第1急冷工程の途中、またはそれ以降に結晶化が開始するが、結晶化しつつある合金を第2急冷工程において冷却用ドラムの内壁に接触させて更に急冷し、結晶相の粒成長を抑制することができる。本願明細書における「結晶化の開始」とは、合金中における結晶相の数密度が2×1021m-3〜1027m-3の範囲内に達することをいうものとする。結晶化の開始により、発熱が生じ始めるため、第2急冷工程は結晶化の開始前または開始後速やかに行なうことが好ましい。\n\n【0034】\n\n本発明では、合金の状態を液相から固相へ変化させるための最初の急冷工程と、その後の急冷工程と別々に行うため、冷却プロセスの設計自由度が向上する。このため、従来技術のように急冷工程の後は雰囲気ガスを媒介した自然な放熱による冷却を行なう場合に比べて、所望の構成相からなる微細急冷組織を安定して形成することができる。\n\n【0035】\n\n以下、図1および図2を参照しながら、本発明の基本的な概念を説明する。ここでは、希土類急冷磁石合金として、Nd2Fe14B型化合物からなる硬磁性相とα-Feや硼化物などの軟磁性相とが同一組織内に混在するナノコンポジット磁石を例にとって説明する。\n\n【0036】\n\n図1は、合金溶湯を急冷し、その状態を液相から固相に変化させる場合における合金温度の時間変化を示すグラフである。グラフの縦軸は合金温度を示し、横軸は合金溶湯と急冷ロールとの接触からの経過時間(対数表示)を示している。\n\n【0037】\n\n図1のグラフには、冷却経路1〜3と結晶相A〜Cの生成領域とが模式的に示されている。本発明による2段階の急冷を行うと、合金溶湯は、冷却経路1を経て液相から固相に変化し、凝固する。この例における第1急冷工程は、合金溶湯を冷却ロールの表面に接触させることによって行っている。冷却経路1の始点は、第1急冷工程において合金溶湯が冷却ロールの表面に接触する時に対応し、冷却経路上の点aは、合金が冷却ロールの表面から離れる時点に対応している。\n\n【0038】\n\n合金温度は、冷却ロールと接触している極めて短い間に低下する。図1に示す例では、冷却経路1の点aにおける状態(以下、「状態a」と称する。)で、結晶相Aの核が生成するものとする。この状態aにおける合金の組織を図2(a)に示す。\n\n【0039】\n\nNd2Fe14B型化合物を硬磁性相として含むナノコンポジット磁石用合金を作製する場合、結晶相Aは、例えばNd2Fe14B型化合物である。この場合、図2(a)に示される小さな白い点は、Nd2Fe14B型化合物の結晶成長の核を模式的に示している。Nd2Fe14B型化合物(=結晶相A)は、これらの核を中心にして成長してゆくことになる。現実には、結晶相Aの析出·成長は、冷却経路の点aで示される時点よりも早くに開始することもあれば、遅くに開始する場合もある。ここでは、簡単のため、合金が第1急冷工程のための冷却手段(冷却ロール)を離れたタイミングで大部分の結晶化が開始すると仮定して、本発明を説明することとする。\n\n【0040】\n\n本発明では、この例のように、合金溶湯の第1急冷工程によって結晶相Aの核が生成した場合においても、結晶化が開始した後、合金の冷却を自由放冷に委ねることなく、第2急冷工程を行うことにより、合金の熱を積極的に奪う。このため、結晶相Aが成長しつつあるときも合金温度が低下し、結晶相Bの生成温度領域を速やかに通過する(図1の冷却経路1)。その結果、最終的な状態b-1では、図2(b-1)に示すように、微細な結晶相Aおよび結晶相Bが分散した組織構造が得られ、ナノコンポジット磁石の優れた特性を最大限に発揮させることが可能となる。\n\n【0041】\n\n次に、図1の冷却経路2を経て冷却される場合を説明する。この例では、第1急冷工程の後に第2急冷工程を行わない。その結果、結晶相Aの結晶化開始とともに放出される結晶化反応熱により、合金温度は速やかに低下せず、図1に示す冷却経路2を辿ることになり、結晶相Aが析出·成長しやすい領域の滞在時間が長くなる。このため、結晶核の再溶解と成長過程とが進行し、結晶相Aの生成が完了した後に結晶相Bの結晶化が開始する。このため、最終的な状態B-2では、図2(b-2)に示すように、結晶相Aが粗大化した組織が得られる。\n\n【0042】\n\n次に、図1の冷却経路3を経て冷却される場合を説明する。この場合も、第1急冷工程の後に第2急冷工程を行わないが、この例では、結晶相Aの結晶化開始とともに放出される結晶化反応熱の量が多く、合金温度が一時的に上昇する。そのため、結晶相Aの核が再融解し、目的としない結晶相C(ナノコンポジット磁石にとって不用な相)が生成されてしまう。このようにして結晶相Cが生成した後、結晶相Aおよび結晶相Bがこの順序で成長する。このため、最終的な状態B-3では、図2(b-3)に示すように、結晶相Cが存在することにより、残りの部分の組成が変化してしまい、結晶相Aおよび結晶相Bが充分に生成されず、結晶相Aおよび結晶相Bが磁気的に結合したナノコンポジット磁石組織が得られない。\n\n【0043】\n\nこのように、冷却経路2および3では、第2急冷工程を実行せず、冷却例路上の点aの時点以降における合金温度の低下は、自由放冷によって生じる。これに対して、本発明では、冷却途上で結晶化が開始した後、第2急冷工程を行い、更に合金を急冷することによって、冷却過程における結晶相の成長を抑制する。\n\n【0044】\n\n図1に示す例では、第2急冷工程を開始する時点では既に結晶化が開始しているが、合金の結晶化は、第2急冷工程を開始した後に始まっても良い。合金の組成や第1急冷工程の条件によっては第2急冷工程を開始する前には結晶化が始まる温度にまで合金は冷却されていない場合があり得る。そのような場合でも、第2急冷工程を行なうことにより、結晶相の成長を効果的に抑制できるので、微細な急冷組織を安定して形成することが可能になる。\n\n【0045】\n\nなお、本明細書における「自由放冷」とは、急冷ロールなどの急冷手段の冷却部表面から離れた合金薄帯が雰囲気ガスを介して熱を奪われ、それによって自然に冷却されることや、合金が自ら放射冷却によって熱を失うことを意味する。また、「急冷」とは、「自由放冷」によって雰囲気ガスが合金から熱を奪うレートよりも速いレートで合金の熱を奪い、自由放冷による冷却速度よりも速い冷却速度で合金温度を低下させることを意味するものとする。本発明では、第1急冷工程の後、第2急冷工程を開始するまでの間において、合金が空中を飛行する期間が存在してもよい。この期間は、第1急冷工程と第2急冷工程との間に存在する期間であり、極めて短い自由放冷の期間に相当する。\n\n【0046】\n\n本発明において、第2急冷工程の役割として重要な点は、合金内で結晶化が開始し、結晶化反応熱が発生しているとき、その熱を速やかに奪うことにより、冷却途中における結晶成長を適切に抑制することにある。\n\n【0047】\n\nなお、特許文献3には、第1急冷工程の後、合金内で結晶化が開始する前における金属ガラスの温度を制御する技術が開示されているが、結晶化発熱によって生じた熱を奪うことにより、結晶成長を抑制することは教示されていない。\n\n【0048】\n\n以下、このように制御された急冷を行なうために好適な急冷装置を説明する。\n\n【0049】\n\n[製造装置]\n\n図3は、本発明による希土類急冷磁石合金の製造方法に好適に用いられ得る装置の一構成例を示す図である。図示されている装置は、合金溶湯1を放出するノズルを備えた出湯部と、出湯部から出た合金溶湯1に対して第1急冷工程を施すための急冷ロール4と、急冷ロール4から薄帯状に延びた合金5に対して第2急冷工程を行うための冷却用ドラム6と、冷却用ドラム6を回転させる駆動モータ7とを備えている。出湯部には、高周波コイル2が巻かれており、高周波コイル2に高周波電力を供給することにより、原料合金を溶融することができる。\n\n【0050】\n\n図示されている装置においては、急冷ロール4による抜熱で第1急冷工程の急冷が行われた後、冷却用ドラム6による抜熱で第2急冷工程の急冷が行われる。すなわち本実施形態では、冷却用ドラム6が「冷却媒体」として機能する。\n\n【0051】\n\n図に示す本実施形態の急冷装置では、第1急冷工程を実行するための第1急冷手段として単ロール法によるメルトスピニング装置を採用しているが、本発明の第1急冷手段は、これに限定されない。例えば、双ロール急冷装置、ストリップキャスティング装置、ガスアトマイズ装置、遠心アトマイズ装置、水アトマイズ装置などの種々の液体急冷装置を好適に採用することができる。\n\n【0052】\n\n冷却用ドラム6は、回転可能に支持され、駆動モータ7によって回転させられるが、その回転速度は所定の範囲で任意に調節される。本実施形態の急冷装置によれば、冷却ロール4の回転速度に制限されずに、独立して冷却用ドラム6の回転速度を調節できるため、冷却プロファイルの設計自由度が大きく向上する。\n\n【0053】\n\nさらに本発明によれば、冷却用ドラム6の遠心力を利用して合金5をドラム内壁に押し付けることができるため、ドラム内壁による合金5からの抜熱を効果的に行なうことができる。冷却を一次冷却のように単ロール法によって行なう場合は、冷却ロール4の表面と合金5(合金溶湯1)との間の接触時間が短いが、冷却用ドラム6を用いることにより、合金5とドラム内壁との接触時間を長くすることができる。\n\n【0054】\n\n冷却用ドラム6の内壁と接触するときの合金5の温度は、合金組成によって適宜選択される。具体的には、Nd-Fe-B系急冷合金磁石の場合、急冷合金の温度が500℃から1000℃のときに冷却用ドラム6の内壁と接触させればよい。\n\n【0055】\n\nなお、冷却用ドラム6の少なくとも内壁部分は、熱伝導性や耐久性の観点から、タングステン(W)、鉄(Fe)、銅(Cu)、モリブデン(Mo)、ベリリウム(Be)、アルミニウム(Al)、および/または、これらの合金から形成されることが好ましい。合金を安定的に急冷するには、熱伝導率が100W/mK以上の材料(銅、銅合金、W、Mo、Be)を用いることが好ましい。また、ドラム6の内壁の表面には、Cr、Ni、これらの合金の単層/積層のめっきが施されていることが好ましい。Cuなどの融点および硬度が比較的低い材料からドラム6を作成する場合でも、Crなどのめっきを行うことにより、ドラム内壁の強度を高めることができ、急冷工程時における内壁面の溶融や劣化を抑制することが可能になる。\n\n【0056】\n\n前述したように、本発明の好ましい実施形態では、第1急冷工程の急冷時に結晶化を開始した合金、あるいは第1急冷工程の急冷直後に結晶化を開始した合金に対して、第2急冷工程の急冷を行い、結晶相の望まぬ成長を抑制する。もし第2急冷工程の急冷を行わなかったとしたならば結晶相の成長が進むために最終的な磁石特性の劣化につながるところ、本発明の好ましい実施形態によれば、そのような結晶相の成長を抑制できるため、優れた磁石特性を発現し得る急冷合金を作製することが可能になる。この結晶化を開始した後\n\n、的確に第2急冷工程を行うためには、低下しつつある合金温度が所定範囲に入ったタイミングを逃すことなく、第2急冷工程を開始する必要がある。ある好ましい実施形態では、急冷ロール4を離れた合金が雰囲気中を飛行して冷却用ドラム6の内壁に接触するタイミングを適宜調節し、例えば合金が急冷ロール4を離れてから0.002〜0.2秒の範囲内に冷却用ドラム6の内壁に達するようにすることができる。この期間を0.002秒よりも短くすることは、急冷ロール4と冷却用ドラム6とが接近しすぎるため、装置の設計上困難である。また、0.2秒よりも長くすると、第1急冷工程後の冷却速度が低くなりすぎるため、目的とする結晶相以外の相が析出したり、目的とする結晶相が粗大化して良好な磁気特性を得にくくなる。これらの観点から、上記期間は0.002〜0.2秒の範囲に設定することが好ましい。また、第2急冷工程の効果を高めるには、上記の期間を0.005〜0.02秒の範囲に設定することが更に好ましい。\n\n【0057】\n\nなお、冷却用ドラム6の内部には合金5を粉砕するための粉砕機構を設けてもよい。粉砕機構の構造は特に限定されないが、例えば、図3に示すように単数または複数の粉砕刃8を冷却用ドラム6の底面および/または内壁に設けることにより、冷却用ドラム6の回転力を利用して合金を効率的に粉砕することが可能である。冷却用ドラム6の底面部に粉砕刃8を設ける場合は、冷却用ドラム6の回転とは独立して粉砕刃8を回転できるようにしてもよいし、あるいは、粉砕刃8は回転させずに装置に対して固定してもよい。一方、粉砕刃8を回転させる場合は、その回転の向きを冷却用ドラム6の回転の向きに一致させてもよいし、反対に設定してもよい。\n\n【0058】\n\n冷却用ドラム6の回転速度は、合金5が遠心力によってドラム内壁に接触しうる速度、すなわち、遠心力>重力となる回転速度に設定することが好ましい。具体的には、ドラム半径をr(m)とすると、30r1/2rpm以上に設定することが好ましい。合金5の自重に抗してドラム内壁に長時間接触することができれば、効率的な抜熱を実現できる。\n\n【0059】\n\n[製造方法]\n\n以下、本発明による希土類急冷磁石合金の製造方法の実施形態を説明する。\n\n【0060】\n\n本実施形態では、まず、最終的に作製すべき磁石に応じて所望の組成を有する合金の溶湯を作製し、図3に示す装置を用いて第1急冷工程を実行し、合金の温度を低下させ、結晶化を開始させる。その後、冷却用ドラム6を用いて第2急冷工程を行う。本発明の製造方法で好適に作製され得る磁石の組成は、特に限定されないが、ここでは、以下の組成を有する磁石を作製する。\n\n【0061】\n\n(Fe1-mTm)100-x-y-z-lQxRyM1zM2lで表現される。ここで、TはCoおよびNiからなる群から選択された1種以上の元素、QはB、C、O、およびNからなる群から選択された1種以上の元素、RはY(イットリウム)および希土類金属からなる群から選択された1種以上の元素、M1は、Ti、Zr、Nb、V、Cr、Ta、およびHfからなる群から選択された1種以上の元素、M2は、Si、Al、Ga、Cu、Ag、Au、Sn、Pb、In、Biからなる群から選択された1種以上の元素である。組成比率(原子比率)x、y、z、l、およびmが、それぞれ、1【0062】\n\n本発明の製造方法は、特に第1および第2急冷工程中および/または急冷工程後の結晶化で発現する結晶相がNd2Fe14B型結晶構造を有する硬磁性相と、鉄や鉄基硼化物の軟磁性相である場合に特に好適に採用される。ただし、他の構成相を含むナノコンポジット磁石や、単相磁石でも、所望の構成相を適切なサイズで含有する組織構造を形成できる利点がある。\n\n【0063】\n\n本実施形態では、冷却ロール4のロール表面速度が例えば3m/秒以上30m/秒以下になるように冷却ロール4を回転させる。急冷は、70kPa以下の不活性ガス雰囲気中または真空中で行うことが好ましい。雰囲気圧力が70kPaを超える場合、回転ロールの表面と合金溶湯との間に雰囲気ガスが巻き込まれやすくなる。そのような雰囲気ガスの巻き込みが発生すると、合金帯の表面にガスポケットが生じ、均一な急冷が達成されず、急冷組織が不均一化するため、急冷を安定的に行うことが困難になる。不活性ガス雰囲気中で急冷を行う場合のガス圧力の好ましい範囲は、35kPa以下、特に1.5kPa程度である。\n\n【0064】\n\n冷却用ドラム6の内壁の温度は、例えば、図1における結晶相Bの生成領域の下限温度以下の温度に設定することが好ましい。本実施形態のようにNd-Fe-B系のナノコンポジット磁石を作製する場合には、ドラム6の内壁温度を500℃以下に維持することが好ましい。冷却用ドラム6の内壁温度が500℃を超える場合、第2急冷工程での抜熱が不十分になり、結晶相の成長を充分に抑制できなくなるおそれがあるからである。\n\n【0065】\n\n[熱処理]\n\n上記の2段階急冷工程を経て凝固した急冷合金に対しては、磁気特性を向上させることなどを目的として、公知の熱処理装置を用いた熱処理を行うことが好ましい。この熱処理は、急冷合金を粗く粉砕したあとに行ってもよい。この熱処理により、非晶質相の全部または一部を結晶化して磁石特性を更に向上させることができる。\n\n【0066】\n\n上記組成を有するナノコンポジット磁石を作製する場合、急冷合金は真空中またはアルゴンガスなどの不活性ガス雰囲気中において500℃〜900℃の温度で熱処理されることが好ましい。このような熱処理により、急冷合金中に残存した非晶質相の結晶化を進行させ、より優れた磁気特性を有する鉄基希土類永磁石を得ることができる。\n\n【0067】\n\n[結晶構造]\n\n上記組成を有するナノコンポジット磁石を作製する場合、得られた合金の金属組織は、鉄や鉄基硼化物の軟磁性相とR2Fe14B型結晶構造を有する硬磁性相とが混在し、これらの相が交換相互作用によって磁気的に結合しているナノコンポジット構造を有している。軟磁性相および硬磁性相の平均結晶粒径は、いずれも、1nm以上100nm以下であり、特に軟磁性相の平均結晶粒径は30nm以下と小さい。最も好ましい形態では、軟磁性相が厚さ5nm程度のフイルム状の層を形成し、硬磁性相を取り囲んでいる。このような形態の組織は、Tiを添加した場合に好適に形成される。\n\n【0068】\n\nなお、Sm-Co系やSm-Fe系の希土類急冷磁石を製造する場合は、それぞれの磁石に適した原料合金を用い、適切なナノ結晶組織を形成すればよい。本発明の製造方法は、特に、包晶反応によって目的とする磁石構成相が生成される場合に顕著な効果を発揮するといえる。\n\n【0069】\n\n以上説明した方法で作製されたナノ結晶磁石は、種々の態様で各種の装置に応用され得る。以下、本発明の製造方法によって作製したナノ結晶磁石の粉末を用いてボンド磁石を製造する方法を簡単に説明する。\n\n【0070】\n\nまず、上記のナノ結晶磁石の粉末にエポキシ樹脂からなるバインダーと添加剤とを加え、混練することによってコンパウンドを作製する。次に、コンパウンドを成形装置によって配向磁場中でプレス成形した後、加熱硬化工程、洗浄工程、コーティング工程、検査工程、着磁工程を経て、最終的なボンド磁石を得ることができる。このボンド磁石は、種々のモータやアクチュエータに好適に用いられる。\n\n【0071】\n\n以上、主として、鉄や鉄基硼化物などの軟磁性相とR2Fe14B型硬磁性相とを含むナノコンポジット磁石を例に本発明の好ましい実施形態を説明しているが、本発明の製造方法は、他の材料系のナノ結晶磁石にも適用できる。本発明では、2段階で冷却工程を行なうことにより、第1急冷工程のみによっては得にくいナノ結晶細組織構造を再現性良く作製することが可能になり、このような効果は、硬磁性相を単相として含むナノ結晶磁石であっても発揮される。特に、従来のメルトスピニング法で均一なナノ結晶組織を得ようとすると、冷却ロールの回転周速度を高く設定する必要があるが、本発明の製造方法によれば、第1急冷工程における冷却速度を比較的低く設定しても、第2急冷工程で効果的な冷却を行なうことができるため、所望のナノ結晶組織を得ることが可能になる。このことは、第1急冷工程に用いる冷却ロール装置を小型化することを可能にする利点もある。\n\n【0072】\n\n図4は、第1急冷工程での冷却速度(一次冷却速度)が相対的に高い場合と低い場合において、1段階急冷工程と2段階急冷工程を行なったときの合金温度の時間変化を示している。図4では、横軸が冷却時間をリニアスケールで示している。図1のグラフは、横軸がlogスケールであるため、第1急冷工程の所要時間が長く見えるが、実際には、図4に示すように、第2急冷工程の時間が相対的に長い。このため、冷却用ドラムによる効果的な二次冷却を実行しない場合は、合金は室温に比べて遥かに高い温度状態を長時間経験することになり、ナノ結晶の組織構造が粗大化したり、望まない結相が析出·粗大化するおそれがある。本発明によれば、このような不都合を適切に回避することができ、最終的に優れた磁石特性を示すナノ結晶磁石を再現性良く作製できる。\n\n【図面の簡単な説明】\n\n【0073】\n\n【図1】合金溶湯から急冷合金を形成する場合における合金温度の時間変化(冷却経路1〜3)を示すグラフである。グラフの縦軸は温度、横軸は時間(Logスケール)である。\n\n【図2】(a)は、状態aにおける合金組織を模式的に示す図であり、(b-1)は、状態b-1における合金組織を模式的に示す図であり、(b-2)は、状態b-2における合金組織を模式的に示す図であり、(b-3)は、状態b-3における合金組織を模式的に示す図である。\n\n【図3】本発明の実施形態で好適に用いられる急冷装置の構成を示す図である。\n\n【図4】第2の冷却工程による効果を示すグラフである。グラフの縦軸は温度、横軸は時間(リニアスケール)である。\n\n【符号の説明】\n\n【0074】\n\n1    合金溶湯\n\n2    高周波コイル\n\n3    ノズル\n\n4    急冷ロール\n\n5    急冷合金\n\n6    冷却用ドラム\n\n7    モータ\n\n8    粉砕刃', '【技术领域】\n\n【0001】\n\n本发明涉及一种制备具有细晶体(纳米晶体)组织和淬火装置的稀土磁铁合金的方法。\n\n发明背景\n\n【0002】\n\n纳米复合材料磁体作为适合于粘合磁体的稀土淬火磁体引起关注。纳米复合磁体是磁体,其中包含两种或更多种细晶相,并且硬磁相和软磁相是磁耦合的。铁基稀土纳米复合磁铁是ND2Fe.14理论上,理论上是为了施加高性能,使得具有B相的单相磁体作为主阶段,但现在,纳米复合材料如这种优异的性能不批量生产。\n\n【0003】\n\n作为制造诸如纳米复合磁体的淬火磁体的方法,存在熔融纺丝方法和条带切割方法,并且这些现有技术例如在专利文献1中公开。当根据这样的现有技术制造淬火磁体时,首先,通过液体超声冷却方法从合金熔融金属或非晶相和细晶相的非晶态的无定形状态和细晶相。产生淬火合金。此后,通过加热这些骤冷的合金来进行引起结晶的步骤。\n\n【0004】\n\n在熔融纺丝方法或条带铸造方法中,旋转冷却辊的表面供应合金熔融金属,并且可以快速淬灭合金熔融金属的热量。当使用这种冷却辊淬火合金熔融金属时,通过控制合金熔融金属的供应速率和淬火辊的表面速度来调节淬火时的冷却速率。\n\n【0005】\n\n合金与快速冷辊接触的时间非常短。因此,高温状态(例如,700至900℃)的合金连续从接触面积与快速冷辊连续排出。高温合金处于在带中长度延伸的状态,并在被剥夺周围的大气气体(自发冷却)的同时冷却至约室温。\n\n【0006】\n\n传统上,负责硬磁幅度的ND2Fe.14具有均匀和精细分散的组织的纳米复合磁体,其负责B相和软磁性成型均匀分散,并且在制备淬火的凝结合金后淬灭特定组合物的合金熔融金属,其通过方法生产加热淬火凝固合金并结晶。在这种情况下,当淬火步骤中的冷却速率降低时,形成淬火后立即在合金中沉淀的晶体结构,随后的热处理可以通过软磁α-粗糙Fe等。有。\n\n【0007】\n\n然而,本申请人通过向合金组合物添加Ti来抑制合金熔融金属的冷却过程中α-Fe的沉积和生长,从而ND2Fe.14它在专利文献1和专利文献2中公开,其可以产生含有大B相的骤冷合金。添加Ti使得可以降低淬火步骤中的冷却速率,使得冷却速率相对较低,并且使用具有优异质量生产率的带状铸造方法来制造纳米复合磁体。\n\n【0008】\n\n另一方面,申请人是通过淬火合金熔融金属进行金属玻璃状态的方法,并通过快速冷却淬火合金的组织构造,在加热或冷却合金的方法中形成金属玻璃状态在公开的专利文献3中使用金属玻璃状态。\n\n[专利文献1]日本专利申请公开No.2002-175908\n\n[专利文献2] WO 02/39465 A1宣传册\n\n[专利文献3]日本专利申请公开No.2001-319821\n\n发明的描述\n\n本发明要解决的问题\n\n【0009】\n\n在条带铸造方法的情况下,难以将熔融金属的供应量保持在辊常数,并且如果每单位时间的熔融金属供应量变得过多,则冷却辊\n\n有一个问题是冷却不足。当冷却不足时,可能难以获得由加入Ti的组合物粗糙的铁基稀土永磁体,结果难以获得铁基稀土永磁体优异的磁性。当淬火合金沉积在装置的回收罐中而没有足够的冷却时,显着产生这种问题。\n\n【0010】\n\n另一方面,由于通过发明人的发明人的发明者制备淬火合金的结果,当辊外周速度增加以增加淬火速度时,缠绕在辊周围的淬火带稳定带状带。我无法得到它。结果,为了稳定地获得淬火色带,需要在淬火速度慢于条带铸造时进行淬火,结果,还存在不可能获得基于铁的问题稀土永磁体在磁性物质优异。\n\n【0011】\n\n鉴于这种情况,已经提出了本发明,并且即使具有相对低的淬火速率的淬火方法,诸如带铸造方法和双辊淬火方法的淬火方法,目的也是最终磁力的。本发明的一个目的是本发明的目的提供一种用于获得具有优异特性的纳米晶体的方法和淬火装置。\n\n[解决问题的手段]\n\n【0012】\n\n根据本发明的稀土外来磁磁合金的制造方法与淬灭稀土合金的熔融金属的第一淬火步骤接触冷却介质,以及通过第一淬火步骤开始温度下降的合金,由此,该合金进一步,第二淬火步骤包括第二淬火步骤,第二淬火步骤包括使合金与滚筒内壁接触的步骤,同时使冷却鼓用作冷却介质。\n\n【0013】\n\n在优选的实施方案中,通过接触冷却鼓的内壁进一步淬灭已经开始结晶的合金,并且进一步淬火合金,抑制晶相的晶粒生长。\n\n【0014】\n\n在优选实施例中,第二淬火步骤包括通过旋转冷却鼓来研磨合金的步骤。\n\n【0015】\n\n在优选实施例中,第二淬火步骤包括通过冷却鼓的旋转通过离心力将合金用离心力按压冷却鼓内壁的步骤。\n\n【0016】\n\n在优选实施例中,在第一淬火步骤之后,该合金在大气中移动而不使另一个构件接触,直到开始第二淬火步骤。\n\n【0017】\n\n在优选的实施方案中,第一淬火步骤包括使稀土合金的熔融金属接触在旋转冷却辊的表面上的步骤。\n\n【0018】\n\n在优选的实施方案中,在合金与冷却辊的表面分离之后,接触冷却鼓内壁的时间调节至0.2秒或更小。\n\n【0019】\n\n在优选的实施方案中,第一淬火步骤包括通过气体雾化淬灭稀土合金的熔融金属。\n\n【0020】\n\n在优选的实施方案中,通过第一猝灭步骤结晶表示的晶相是ND2Fe.14具有B型晶体结构的硬磁相。\n\n【0021】\n\n在优选的实施方案中,在第二淬火步骤中与冷却鼓的接触时,合金的温度与冷却鼓的内壁接触,在500℃或更高的范围内或更少。\n\n【0022】\n\n根据本发明的稀土磁体的制造方法包括制备根据任何上述稀土淬火磁磁合金的稀土淬火磁磁合金的步骤,以及对稀有的热处理进行热处理的步骤地球淬火磁铁合金。\n\n【0023】\n\n在优选的实施方案中,通过进行热处理完成纳米晶体组织。\n\n【0024】\n\n在优选实施例中,纳米晶体组织是纳米复合磁体结构,其中硬磁相和软磁相是磁耦合的。\n\n【0025】\n\n本发明的淬火装置是淬火装置,其设置有用于淬灭稀土合金的熔融金属的第一淬火装置,以及第二淬火单元,其接触温度降低与第一淬火装置接触的合金。第二淬火装置包括可旋转支撑的冷却鼓,用于旋转冷却鼓的驱动器,并在淬火步骤中旋转的冷却鼓的内壁上的合金。第一淬火装置与第二个之间的布置关系定义淬火装置以便是可能的。\n\n【0026】\n\n在优选实施例中,冷却滚筒的至少内壁由碳钢,W,Fe,Cu,Mo,E,Al和/或其合金形成。\n\n【0027】\n\n在优选实施例中,驱动机旋转冷却鼓,使得通过冷却鼓的旋转,通过离心力将合金按压冷却鼓的内壁。\n\n【0028】\n\n在优选实施例中,冷却鼓包括用于粉碎合金的研磨机构。\n\n【0029】\n\n在优选实施例中,第一淬火装置是旋转冷却辊。\n\n【0030】\n\n在优选实施例中,在合金与冷却辊的表面分离之后,第一淬火装置和第二淬火装置使得接触冷却滚筒内壁的时间为0.2秒或更短。布置关系是定义。\n\n【发明效果】\n\n【0031】\n\n在本发明中,在淬火第一淬火步骤之后,进行使用冷却鼓的第二淬火步骤的淬火。因此,在淬火和凝固合金熔融金属的过程中,可以在结晶反应行进最快的温度范围内有效地淬灭合金,并且可以最佳地控制结晶过程。结果,即使结晶在第一淬火步骤中开始,并且结晶在第一淬火步骤中开始,即使在第一淬火步骤中开始,通过在结晶初始状态的初始状态下执行第二猝灭步骤来进行晶体。由于谷粒的粗化可以是抑制,甚至具有相对低淬火速度的质量生产率优异的淬火装置可以稳定地产生高性能稀土淬火磁磁合金。\n\n实施本发明的最佳方式\n\n【0032】\n\n在制造根据本发明的稀土淬火磁体合金的方法中,根据第一淬火步骤淬灭稀土合金的熔融金属的第一淬火步骤,以及通过该第一淬火步骤降低温度降低的合金“冷却介质”。执行进一步淬火的第二淬火步骤。在本发明中,当执行第二淬火步骤时,合金与冷却鼓的内壁接触,同时使冷却鼓用作冷却介质。由于通过离心力将合金压在滚筒的内壁上,因此有效的热除去。\n\n【0033】\n\n在本发明的优选实施方案中,通过进行第一淬火步骤,结晶在第一淬火步骤期间开始,或者在第一淬火步骤之后,但结晶合金是在第二淬火步骤中,它与内部接触可以抑制冷却鼓的壁并淬火和晶相的晶粒生长。在本说明书中,“结晶开始”是指合金2×10中晶相的数量密度21M.-3〜十27M.-3假设它在范围内由于发热由于结晶的开始而开始,因此优选在结晶开始之前或之后进行第二猝灭步骤。\n\n【0034】\n\n在本发明中,由于从液相将合金状态改变为固相的第一淬火步骤,所以改善了冷却过程的设计自由,因为它与淬火过程分开进行。如在现有技术中的淬火步骤的情况下,与由大气气体介导的天然散热引起的冷却的情况相比,可以稳定地形成由所需的成分相组成的精细淬火组织。\n\n【0035】\n\n在下文中,将参考图1和图2描述本发明的基本概念。1和2。这里,作为稀土淬火磁磁合金,ND2Fe.14纳米复合磁体,其中由B型化合物和诸如α-Fe或硼化物的软磁性相等的硬磁相将描述为纳米复合磁体的一例。\n\n【0036】\n\n图。图1是表示淬火合金熔融金属的情况下合金温度的时间变化的曲线图,并且状态从液相改变到固相的状态。图的垂直轴表示合金温度,水平轴从合金熔融金属和陡辊之间的接触表示经过的时间(对数显示器)。\n\n【0037】\n\n冷却路径1至3和晶相A至C的曲线示意性地示出了图2的曲线图中。当进行根据本发明的两步淬火时,熔融合金通过冷却路径1从液相改变并固化。通过使合金熔融金属接触在冷却辊的表面上来执行该示例中的第一淬火步骤。冷却路径1的起始点对应于当合金熔融金属接触冷却辊的表面时的第一淬火步骤,并且在冷却路径上的点A对应于合金与冷却表面分离的时间卷。\n\n【0038】\n\n合金温度在与冷却辊接触的短路之间降低。在图1所示的示例中,如图1所示,晶体相A的核由冷却路径1的状态(下文中称为“状态A”)产生。在该状态A中的合金组织如图2(a)所示。\n\n【0039】\n\nn2Fe.14当生产含有B型化合物的纳米复合材料作为硬磁相时,晶相A例如是ND2Fe.14它是B型化合物。在这种情况下,图2(a)所示的小白点是nd2Fe.14示意性地示出了B型化合物的晶体生长的核。 n2Fe.14B型化合物(=结晶相A)将在这些核上以居中生长。实际上,如果它可以比冷却路径的点A更早开始,晶体相A的降水和生长可以缓慢地开始。这里,为了简单起见,本发明将描述本发明假设大多数结晶在由合金分离的时序处于第一淬火步骤的时序开始。\n\n【0040】\n\n在本发明中,如在该实施例中所示,即使通过合金熔融金属的第一淬火步骤产生结晶A的核,结晶开始,然后应注意到自由冷却的合金的冷却。2通过进行淬火过程,它主动地采用合金的热量。因此,即使当晶体相A生长时,合金温度降低,并且晶相B的产生温度范围快速通过(图1的冷却路径1)。结果,在最终状态B-1中,如图2B(B-1)所示,可以将细晶相A和晶相B分散的组织结构,并且可以实现纳米复合材料磁体的优异特性制定最大限制。\n\n【0041】\n\n接下来,将描述通过冷却路径2冷却的情况。将描述图1。在该示例中,在第一淬火步骤之后不执行第二淬火步骤。结果,在结晶相A结晶开始释放的结晶反应热不会迅速减小,并且图2中所示的冷却路径2包括:沉积1,沉积并生长晶体相A。停留时间易于使用的区域变长。因此,晶体核和生长过程的重新溶解进行,并且在完成晶相A的形成之后,开始结晶B.因此,在最终状态B-2中,如图2所示。如图2(b-2)所示,获得由晶体相A粗糙的组织。\n\n【0042】\n\n接下来,将描述图1的冷却路径3的情况。将描述图1。同样在这种情况下,尽管在第一淬火步骤之后未进行第二猝灭步骤,但在该实施例中,在该实施例中释放的结晶反应热量是大的,并且合金温度暂时增加。做。因此,产生晶体相的核和纳米复合磁体不可能的靶晶相C(靶晶相C的核。在以这种方式形成晶体相C之后,晶体相A和晶相B以此顺序生长。因此,在最终状态B-3中,如图2所示。如图2B(B-3)所示,剩余部分的组成变化,并且剩余部分的组成改变,晶相A和晶体不能完全产生相B,并且不能获得晶体相A和晶相B的纳米复合磁体组织不能获得磁粘合。\n\n【0043】\n\n如上所述,在冷却路径2和3中,不执行第二淬火步骤,并且通过自由冷却来执行在冷却示例上的点A之后的合金温度的降低。另一方面,在本发明中,在冷却的基础上开始结晶之后,进行第二猝灭步骤以通过淬灭合金来进一步抑制冷却过程中的晶相的生长。\n\n【0044】\n\n在图1所示的示例中,如图1所示,当开始第二淬火步骤时已经开始结晶,但是在开始第二淬火步骤之后,合金的结晶可以在第二淬火步骤之后开始。取决于合金的组成和第一淬火步骤的条件,可以在开始第二淬火步骤之前将合金冷却至结晶开始的温度。即使在这种情况下,由于可以通过进行第二淬火步骤可以有效地抑制晶相的生长,因此可以稳定地形成细细的猝灭组织。\n\n【0045】\n\n另外,本说明书中的“自由冷却”是指远离淬火装置的冷却部分的表面的合金带脱离热量通过大气气体,自然冷却。它意味着合金通过其自身的辐射冷却失去热量。另外,“淬火”是指合金的热量比大气气体通过“自由冷却”的速率更快的速率,并且合金温度以冷却速率更快地降低通过自由冷却冷却速率。它意味着在本发明中,在第一淬火步骤之后,可以存在其中合金在第二淬火步骤开始期间飞行空气的时段。该时段是第一淬火步骤和第二淬火步骤之间存在的时期,其对应于非常短的自由冷却的时段。\n\n【0046】\n\n在本发明中,作为第二猝灭过程的作用的重要点,结晶开始于合金中,当产生结晶反应热时,通过快速剥夺热量,冷却过程中的晶体生长。被适当抑制。\n\n【0047】\n\n专利文献3公开了一种用于在第一淬火步骤后开始结晶开始之前的用于控制金属玻璃的温度的技术,但是通过结晶热产生的热量需要抑制晶体生长。\n\n【0048】\n\n在下文中,将描述适合于以这种方式执行快速冷却的淬火装置。\n\n【0049】\n\n[制造设备]\n\n图。图3是表示根据本发明的稀土淬火磁磁合金的制造方法的装置的装置的结构的一例的图。所示的装置是陡辊4,用于将第一淬火过程施加到第一淬火过程,其中热水部分配备有喷嘴,该喷嘴发射从热水供应单元发射的合金熔融金属1和合金熔融金属1,以及快速卷4a冷却鼓6,用于执行第二淬火步骤的冷却鼓6和用于旋转冷却鼓6的驱动电动机7相对于延伸在条带形状的合金5。高频线圈2缠绕在热水部分上,并且通过向高频线圈2供应高频功率来熔化原料合金。\n\n【0050】\n\n在所示的装置中,在快速冷辊4的热处理之后进行第一淬火步骤的淬火,然后通过冷却鼓6淬火进行第二淬火步骤淬火。也就是说,在本实施例中,冷却鼓6用作“冷却介质”。\n\n【0051】\n\n在附图中所示的本实施例的淬火装置中,采用单辊方法的熔融纺丝装置作为执行第一淬火步骤的第一淬火装置,但是本发明的第一淬火装置不受限制。例如,可以适当地采用诸如双辊骤冷装置,条带铸造装置,气雾剂,离心雾化装置,水雾化器等的各种液体淬火装置。\n\n【0052】\n\n冷却鼓6可旋转地支撑并通过驱动电动机7旋转,但其旋转速度在预定范围内任意调节。根据本实施例的淬火装置,由于冷却鼓6的旋转速度可以独立地调节,所以可以独立地调节冷却鼓6的旋转速度,从而大大提高了冷却曲线的设计自由度。\n\n【0053】\n\n此外,根据本发明,由于使用冷却鼓6的离心力,可以将合金5压靠在鼓的内壁上,因此可以有效地执行由滚筒的内壁从合金5撤回。当通过单次冷却以单次冷却进行冷却时,冷却辊4的表面和合金5(合金熔融1)之间的接触时间短,但通过使用冷却鼓6,该合金如图5所示,可以延长滚筒内壁的接触时间。\n\n【0054】\n\n在接触冷却鼓6的内壁时,合金5的温度适当地由合金组合物选择。具体地,在基于ND-Fe-B的骤冷合金磁体的情况下,当温度为500℃至1000℃时,可以与冷却鼓6的内壁接触淬火合金的温度。\n\n【0055】\n\n另外,从导热率的观点出发和耐久性。和/或,优选由这些合金形成。为了稳定地淬灭合金,优选使用具有100W / mk或更大的导热率的材料(铜,铜合金,W,Mo)。另外,优选的是,滚筒6的内壁的表面具有这些合金的单层/层压,以及这些合金。即使在使滚筒6从具有相对低的熔点和诸如Cu的硬度的滚筒6的情况下,也可以通过电镀滚筒6来增加鼓的内壁的强度,并熔化和内壁的劣化淬火过程时的表面。可以抑制它。\n\n【0056】\n\n如上所述,在本发明的优选实施方案中,用于在淬火第一淬火步骤的淬火时已经开始结晶的合金的第二猝灭方法,或在淬火第一淬火过程后立即开始结晶的合金。淬火,并抑制所需的晶相生长。如果第二淬火步骤未淬灭,则导致最终磁体特性的劣化,因为晶相的生长,并且根据本发明的优选实施例,如可以抑制的那样,这种晶相生长可以生产可以表达优异磁体特性的淬火合金。开始这种结晶后\n\n为了执行第二淬火步骤,需要开始第二淬火步骤而不缺少执行预定范围中掉落的合金温度的定时。在一个优选实施例中,适当地调节离开快速辊4的合金以接触冷却鼓6的内壁,例如,合金使突然卷4和0.2秒离开。可以到达内壁在该范围内的冷却鼓6的内容。为了使该周期短于0.002秒,陡辊4和冷却鼓6过于靠近装置的设计。另外,当它长于0.2秒时,第一淬火步骤之后的冷却速率变得太低,使得沉淀除目标晶相之外的相位,并且靶晶相粗糙,并且是良好的磁性很难得到。从这些观点来看,优选将0.002至0.2秒的范围设定。此外,为了提高第二淬火过程的效果,更优选将上述周期设定在0.005至0.02秒的范围内。\n\n【0057】\n\n另外,可以在冷却鼓6内设置用于研磨合金5的研磨机构。虽然研磨机构的结构没有特别限制,例如,如图2所示。如图3所示,通过在底表面和/或内部提供六个或更多个研磨刀片8来使用冷却鼓6的旋转力冷却鼓6的壁6.可以有效地研磨合金。当研磨刀片8设置在冷却鼓6的底部时,研磨刀片8可以独立于冷却鼓6的旋转旋转,或者砂叶片8不旋转它可以固定到装置上。另一方面,当磨削刀片8旋转时,旋转的方向可以与冷却鼓6的旋转方向匹配,或者可以设置相反。\n\n【0058】\n\n冷却鼓6的旋转速度优选地设定为通过离心力,即离心力>重力接触滚筒内壁的速度。具体地,如果鼓半径是R(m),30r1/2优选地设定为RPM或更多。如果可以使滚筒的内壁长时间抵抗合金5的重量,可以实现有效的散热。\n\n【0059】\n\n[生产方法]\n\n在下文中,将描述根据本发明的制造稀土淬火磁体合金的方法的实施例。\n\n【0060】\n\n在本实施例中,首先,根据要最终制备的磁体制备具有所需组合物的合金的熔融金属,并且使用图3所示的装置进行第一淬火步骤。3,以及合金的温度减少了。让结晶开始。此后,使用冷却鼓6进行第二淬火步骤。尽管可以在本发明的制造方法中适当制造的磁体的组成没有特别限制,但是,在这里,制备具有以下组成的磁体。\n\n【0061】\n\n(Fe.1-mT.m的)100-x-y-z-l问:xR.yM1zM2l表达。这里,T是选自Co和Ni的组中的一种或多种元素,以及选自B,C,O和N的1或更多个元素是Y(钇)从该组中选择的一个或多个元素由稀土金属,M1,选自Ti,Zr,Nb,V,Cr,Ta和Hf,M2,Si或更多个元素组成的组成,其中来自由Al,Ga组成的组,Cu,Ag,Au,Sn,Pb,,Bi。组成比(原子比例)x,y,z,l和m为1x≤30原子%,3≤y【0062】\n\n制造本发明的方法特别是在第一和第二淬火过程之后表达的结晶相和/或在淬火步骤ND之后结晶2Fe.14当具有B型晶体结构的硬磁相和铁或铁基硼化物的软磁相时特别适当地采用。然而,存在含有另一组成相或单相磁体的纳米复合磁体可以以适当的尺寸形成含有所需组合相的组织结构。\n\n【0063】\n\n在本实施例中,冷却辊4旋转,使得冷却辊4的辊表面速度例如为3m / s或更高,30米/秒或更小。淬火优选在惰性气体气氛中或在70kPa或更小的真空下进行。当大气压超过70kPa时,大气气体倾向于缠绕在旋转辊的表面和合金熔融金属之间。当发生这种气氛气体时,在合金带的表面上发生气体袋,未实现均匀的淬火,并且由于淬火组织是不均匀的,因此难以稳定地稳定。在惰性气体气氛中淬火的情况下的优选气体压力范围为约35kPa或更小,特别是约1.5kPa。\n\n【0064】\n\n冷却鼓6的内壁的温度优选地设定为低于图1中的晶相B的下限温度的温度。1。当如在本实施例中产生的ND-Fe-B基纳米复合磁体时,优选将滚筒6的内壁温度保持在500℃或更小。当冷却鼓6的内壁温度超过500℃时,第二淬火步骤中的热处理变得不足,并且可以不充分抑制晶相的生长。\n\n【0065】\n\n[热处理]\n\n优选使用已知的热处理装置进行热处理,以改善磁特性,以及提高磁特性,以及提高磁特性。可以在淬火合金大致研磨之后进行该热处理。通过这种热处理,可以结晶,全部或部分非晶相进一步改善磁体特性。\n\n【0066】\n\n当生产具有该组合物的纳米复合材料时,优选在惰性气体气氛中在500℃至900℃的温度下热处理淬火合金。通过这种热处理,可以提前留在淬火合金中的无定形相结晶,并且可以获得具有更好磁性的铁基稀土永磁体。\n\n【0067】\n\n[晶体结构]\n\n在制造具有上述组成的纳米复合材料时,所得合金的金属结构是铁或铁基硼化物的软磁相和r2Fe.14混合具有B型晶体结构的硬磁相,这些相具有纳米复合材料结构,其中它们通过交换相互作用磁耦合。软磁相的平均晶粒尺寸和硬磁相是全部1nm或更大且100nm或更小,并且软磁相的平均晶粒尺寸为30nm或更小。在最优选的形式中,软磁相形成厚度为约5nm的膜状层并围绕硬磁相。当加入Ti时适当地形成这种形式的组织。\n\n【0068】\n\n在制造SM-CO系统和SM-FE系统的稀土淬火磁体的情况下,适用于每个磁体的原料合金可用于形成合适的纳米晶体结构。当磁体成分相特别通过晶体反应产生磁体成分相时,可以说,本发明的制造方法表现出显着的效果。\n\n【0069】\n\n以上述方法生产的纳米晶体可以以各种方式应用于各种装置。在下文中,将简要描述使用由本发明的制造方法制造的纳米晶体的粉末制造粘合磁体的方法。\n\n【0070】\n\n首先,用粘合剂和由环氧树脂制成的添加剂加入上述纳米晶体的粉末以通过捏合制备化合物。接下来,在通过成形装置在取向磁场中按化化合物之后,可以通过热固化步骤,清洁步骤,涂布过程,检查过程,磁化过程获得最终键合磁体。该键合磁铁适用于各种电动机和致动器。\n\n【0071】\n\n如上所述,主要是软磁相和R,例如铁或铁基硼化物2Fe.14尽管通过包括B型硬磁相的纳米复合磁体的实例描述了本发明的优选实施例,但是本发明的制造方法也可以应用于其他材料系统的纳米晶体。在本发明中,通过在两个阶段进行冷却过程,可以通过仅通过第一淬火步骤产生难以获得的纳米晶体纹理结构,并且这种效果是硬磁相,它也与a表现出纳米晶体含有单相的磁体。特别地,当常规熔体纺丝方法旨在获得均匀的纳米晶体结构时,必须设定冷却辊的旋转外围速度,而是根据本发明的制造方法,在第一淬火中的冷却速率过程即使设定为相对较低,可以在第二淬火步骤中进行有效的冷却,从而可以获得所需的纳米晶体结构。这还具有使得可以使第一淬火步骤中使用的冷却辊小型化的优点。\n\n【0072】\n\n图4显示了当第一淬火步骤中的冷却速率(主冷却速率)相对较高并且进行两步淬火步骤和两步淬火过程时,合金温度的时间变化。存在。在图1中。如图4所示,横轴表示线性刻度上的冷却时间。由于图1的曲线图。图1是水平轴的日志比例,第一淬火过程的所需时间看起来长,但实际上,如图4所示,第二淬火过程的时间相对较长。因此,如果不进行用冷却鼓的有效二次冷却,则合金远高于室温,并且纳米晶体的组织结构粗糙或期望。沉淀和粗糙的风险。根据本发明,可以适当地避免这种缺点,并且可以通过高再现性产生具有最终优异磁体特性的纳米晶体。\n\n[简要描述;简介]\n\n【0073】\n\n【图1】图3是表示从合金熔融金属形成淬火合金的合金温度(冷却路径1-3)的时间变化的曲线图。图的垂直轴是温度,水平轴是时间(日志比例)。\n\n【图2】(a)是示出通常处于状态A的合金结构的图,(B-1)是表示状态B-1的合金结构的图,(B-2)是表示的通常在B-2中的合金结构和(B-3)是表示状态B-3中的合金组织的图。\n\n图3.图3是表示在本发明的实施方式中适用的淬火装置的结构的图。\n\n图4.图3是表示第二冷却过程的效果的图。图的垂直轴是温度,水平轴是时间(线性刻度)。\n\n[标志的说明]\n\n【0074】\n\n1合金熔融金属\n\n2高频线圈\n\n3个喷嘴\n\n4个树桩冷轧\n\n5淬火合金\n\n6冷却鼓\n\n7个电机\n\n8磨刀面');
INSERT INTO `os_patent_instruction_text` VALUES (12997, 22826, 'BACKGROUND OF THE INVENTION\n\n[0001]1. Field of the Invention\n\n[0002]The present invention relates to a method and apparatus for making a magnetic field analysis on a magnetic circuit including a permanent magnet of which the properties are subject to change due to demagnetization. The present invention also relates to a method for producing a permanent magnet by using such a method and apparatus for magnetic field analysis.\n\n[0003]2. Description of the Related Art\n\n[0004]Recently, to design a magnetic circuit more efficiently and to further reduce its size, magnetic field analysis has sometimes been carried out using a computer simulation technique. Such magnetic field analysis may be performed by a method such as a finite element method in which permanent magnets with various shapes are evaluated by dividing them into a huge number of very small elements (or meshes). As those magnetic field analysis techniques have been developed, it has become possible to calculate the magnetic flux density distribution or flux in a magnetic circuit with high precision. For example, a conventional magnetic field analysis method is described in the following prior art document:[0005]Document: Yasuhito Taniguchi and four others, “Three-Dimensional Magnetic Field Analysis on Permanent Magnet Motor with Skew Considered”, [online], [searched through, and found on, the Internet on Oct. 2, 2002], .\n\n[0006]When a rare-earth permanent magnet is heated, its magnetization decreases (which is called a “demagnetization phenomenon”). Meanwhile, a ferrite magnet produces the demagnetization phenomenon when cooled. Those demagnetization phenomena include a “reversible demagnetization phenomenon” in which a magnet recovers its original magnetization when brought back to a normal temperature and an “irreversible demagnetization phenomenon” in which a magnet cannot recover its original magnetization even when brought back to the normal temperature. The magnitude of the reversible demagnetization changes linearly with the temperature of the magnet and its rate is called a “reversible temperature coefficient”. On the other hand, the irreversible demagnetization refers to the decrease in magnetization that has been caused by heating or cooling but cannot be compensated for even when the magnet temperature is brought back to room temperature again.\n\n[0007]For example, suppose a permanent magnet is used at 100° C. In that case, even if the temperature of the magnet is decreased to a normal temperature (20° C.) after the irreversible demagnetization has been produced, the magnetization of the magnet remains low and cannot recover its original level fully. Once such demagnetization has occurred, the hysteresis curve of the magnet changes its shape.\n\n[0008]In carrying out a magnetic field analysis on a magnetic circuit including a permanent magnet, the magnetic field analysis needs to be performed with the demagnetization of the permanent magnet taken into consideration. However, a conventional demagnetization estimating method just determines whether or not demagnetization occurs in a permanent magnet under given operating conditions (such as temperature and external magnetic field). Hereinafter, this point will be described with reference to FIGS. 1 through 3.\n\n[0009]FIG. 1 illustrates a plate-shaped permanent magnet. The permanent magnet illustrated in FIG. 1 is magnetized in its thickness direction. FIG. 2 is a cross-sectional view schematically illustrating the magnetic lines of force produced by that permanent magnet. As can be seen from FIG. 2, the magnetic paths of magnetic lines of force emitted from the vicinity of the ends of the magnet are shorter than those of magnetic lines of force emitted from the center portion of the magnet.\n\n[0010]Once a permanent magnet has been magnetized, the permanent magnet produces an N pole and an S pole. Accordingly, as shown in FIG. 2, a magnetic flux (i.e., magnetic lines of force) is produced so as to head from the N pole toward the S pole outside of the permanent magnet. In this case, another magnetic flux heading from the N pole toward the S pole has been produced inside of the permanent magnet, too. The magnetic flux produced inside of the magnet acts in such a direction as to decrease the magnetization of the permanent magnet. This is why a magnetic field formed by such a magnetic flux is called a “demagnetizing field (self demagnetizing force)”. The closer the N and S poles are, the greater the demagnetizing force. In the plate-shaped permanent magnet shown in FIG. 1, the larger the ratio of the plate thickness to the plate area, the greater the demagnetizing force.\n\n[0011]FIG. 3 is a graph schematically showing a portion of the demagnetization curve of the permanent magnet shown in FIG. 1. As used herein, the “demagnetization curve” refers to either the second or third quadrant portion of a hysteresis curve, which is obtained by starting to change the magnetic field monotonically in a state where a permanent magnet has a saturated magnetic flux density or saturated magnetic polarization. FIG. 3 is a graph of which the ordinate represents the magnetic flux density B and the abscissa represents the external magnetic field H and shows only the second quadrant portion. In the graph shown in FIG. 3, a demagnetization curve is drawn as an approximated line. However, even if at least a portion of the hysteresis curve of a magnet is linear, that hysteresis curve will also be referred to herein as a “B-H curve”.\n\n[0012]In the graph shown in FIG. 3, a point corresponding to the demagnetizing force Hd (i.e., the operating point) is designated on the B-H curve. The magnetic flux density at this operating point is equal to Bm and the line connecting the operating point to the origin of the graph is called an “operating line”. And the absolute value of the slope of the operating line is called a “permeance coefficient Pc”. The magnetic flux density Bm is one of numerical values that depend on the permeance coefficient Pc.\n\n[0013]The demagnetizing force Hd is always present no matter whether or not an external field is applied to a permanent magnet. Accordingly, the density of the magnetic flux emitted from a permanent magnet to which no external field is applied is equal to the magnetic flux density Bm corresponding to the operating point. It is generally said that the operating point of a permanent magnet changes with the shape of the magnet or its surrounding conditions. Strictly speaking, the operating point is also changeable from one position to another in the permanent magnet. That is to say, the permeance coefficient Pc of a permanent magnet is not constant in that permanent magnet but changes from one position to another in the permanent magnet.\n\n[0014]As shown in FIG. 2, the shorter the magnetic path, the smaller the demagnetizing force Hd and the larger the permeance coefficient Pc. Stated otherwise, the longer the magnetic path, the greater the demagnetizing force Hd and the smaller the permeance coefficient Pc. For that reason, in the permanent magnet having the shape shown in FIG. 1, the permeance coefficient Pc becomes the smallest at the center of the magnet and the largest at the corners of the magnet. In FIG. 1, Pc(min) denotes a site with the minimum permeance coefficient Pc and Pc(max) denotes a site with the maximum permeance coefficient Pc.\n\n[0015]In this manner, the permeance coefficient Pc of a permanent magnet changes according to a specific position in the permanent magnet. On the other hand, the demagnetization produces where the permeance coefficient Pc is the smallest. Thus, in the conventional magnetic field analysis method, the magnetic flux density values Bm at respective sites of a magnet (i.e., a number of finite elements) are obtained and then the permeance coefficient Pc(min) at a site with the smallest magnetic flux density Bm is calculated by a computer simulation technique. Thereafter, by comparing an operating line having such a permeance coefficient Pc(min) with a B-H curve at an operating temperature, it is determined whether or not this site can be demagnetized. Hereinafter, such a conventional demagnetization estimating method will be described with reference to FIG. 4.\n\n[0016]FIG. 4 is a graph showing a B-H curve of a permanent magnet at a normal temperature (20° C.) as a solid curve and another B-H curve thereof at 100° C. as a dotted curve. The B-H curve data at respective temperatures are stored in a memory of a computer. After data about the shape of a permanent magnet has been fed, the operating lines are obtained for respective sites in the magnet by a finite element method.\n\n[0017]The graph of FIG. 4 also shows two operating lines of two types of magnets C and D. The operating line C is supposed to be the operating line of a site that has the smallest permeance coefficient Pc in the magnet C, while the operating line D is supposed to be the operating line of a site that has the smallest permeance coefficient Pc in the magnet D. Also, these two magnets C and D are supposed to share the same B-H curve for the sake of simplicity.\n\n[0018]As can be seen from FIG. 4, the intersection between the operating line C and the 20° C. B-H curve and the intersection between the operating line C and the 100° C. B-H curve are both located above the inflection points (i.e., knick points) of their associated B-H curves. Thus, it is expected that the magnet C with the greater permeance coefficient Pc(min) would not be demagnetized even under an operating environment at 100° C.\n\n[0019]On the other hand, although the intersection between the operating line of the magnet D with the smaller permeance coefficient Pc(min) and the 20° C. B-H curve is located above the inflection point (i.e., knick point) of its associated B-H curve, the intersection between the operating line of the magnet D and the 100° C. B-H curve is located below the inflection point (i.e., knick point) of its associated B-H curve. Thus, it is judged that the magnet D with the smaller permeance coefficient Pc(min) would not be demagnetized at 20° C. but would be demagnetized at 100° C.\n\n[0020]Such a conventional magnetic field analysis method just determines whether or not a site that has the smallest permeance coefficient in a permanent magnet is demagnetized. Accordingly, even if that portion with the smallest permeance coefficient accounted for such a small percentage of the overall permanent magnet that the demagnetization problem hardly occurs in practice, the decision could still be “demagnetization should occur”.\n\n[0021]Also, the conventional magnetic field analysis method could not give any answer to the question of what the magnetic flux density distribution would be like after the demagnetization occurred. That is to say, the conventional magnetic field analysis method just tested each magnet for the probability of occurrence of demagnetization and was unable to show, by numerical analysis, how the flux and magnetic flux density distribution would change as a result of the demagnetization.\n\n[0022]In order to overcome the problems described above, a primary object of the present invention is to provide a method and apparatus for magnetic field analysis, contributing to not only determining whether or not demagnetization would occur in a permanent magnet but also calculating its magnetic flux density distribution after the demagnetization.\n\nSUMMARY OF THE INVENTION\n\n[0023]A magnetic field analysis method according to the present invention includes the steps of: calculating permeance coefficients at multiple sites in a permanent magnet and/or numerical values that are dependent on the permeance coefficients based on B-H curve data of the permanent magnet at a first temperature T1; and deriving modified B-H curve data of the permanent magnet, which has been operated at a second temperature T2 that is different from the first temperature T1, for the respective sites based on B-H curve data of the permanent magnet at the second temperature T2 and the permeance coefficients or the numerical values as stored in the memory means.\n\n[0024]In one preferred embodiment, the modified B-H curve data is derived at a third temperature that is different from the second temperature T2.\n\n[0025]In another preferred embodiment, the method further includes the step of storing the modified B-H curve data in a memory of a calculator.\n\n[0026]A magnetic field analyzer according to the present invention includes memory means for storing B-H curve data of a selected permanent magnet at multiple temperatures and computing means. The computing means carries out the steps of: calculating permeance coefficients at multiple sites in the permanent magnet and/or numerical values that are dependent on the permeance coefficients based on B-H curve data of the permanent magnet at a first temperature T1 as stored in the memory means; and deriving modified B-H curve data of the permanent magnet, which has been operated at a second temperature T2 that is different from the first temperature T1, for the respective sites based on B-H curve data of the permanent magnet at the second temperature T2 and the permeance coefficients or the numerical values as stored in the memory means.\n\n[0027]In one preferred embodiment the computing means stores the modified B-H curve data in the memory means.\n\n[0028]A magnetic field analysis program according to the present invention is defined so as to make a computer carry out the steps of: calculating permeance coefficients at multiple sites in a permanent magnet and/or numerical values that are dependent on the permeance coefficients based on B-H curve data of the permanent magnet at a first temperature T1; and deriving modified B-H curve data of the permanent magnet, which has been operated at a second temperature T2 that is different from the first temperature T1, for the respective sites based on B-H curve data of the permanent magnet at the second temperature T2 and the permeance coefficients or the numerical values.\n\n[0029]In one preferred embodiment, the computer is made to derive the modified B-H curve data at a third temperature that is different from the second temperature T2.\n\n[0030]In another preferred embodiment, the computer is made to further carry out the step of storing the modified B-H curve data in a memory of a calculator.\n\n[0031]In an additional module program for magnetic field analysis according to the present invention, a magnetic field analysis program makes a computer carry out the steps of: calculating permeance coefficients at multiple sites in a permanent magnet and/or numerical values that are dependent on the permeance coefficients based on B-H curve data of the permanent magnet at a first temperature T1; and then deriving modified B-H curve data of the permanent magnet, which has been operated at a second temperature T2 that is higher from the first temperature T1, for the respective sites based on B-H curve data of the permanent magnet at the second temperature T2 and the permeance coefficients or the numerical values.\n\n[0032]In one preferred embodiment, the computer is made to derive the modified B-H curve data at a third temperature that is different from the second temperature T2.\n\n[0033]In another preferred embodiment, the computer is made to further carry out the step of storing the modified B-H curve data in a memory of a calculator.\n\n[0034]A method for producing a magnetic circuit according to the present invention includes the steps of: doing a magnetic field analysis on a magnetic circuit, including multiple permanent magnets that have been demagnetized at the second temperature T2, by any of the magnetic field analysis methods described above; and making the magnetic circuit, including selected one of the permanent magnets, based a result of the magnetic field analysis.\n\nBRIEF DESCRIPTION OF THE DRAWINGS\n\n[0035]FIG. 1 is a perspective view illustrating a rectangular parallelepiped permanent magnet magnetized in the thickness direction.\n\n[0036]FIG. 2 is a cross-sectional view schematically illustrating the magnetic lines of force produced by the permanent magnet shown in FIG. 1.\n\n[0037]FIG. 3 is a graph schematically showing a portion of the demagnetization curve of the permanent magnet shown in FIG. 1.\n\n[0038]FIG. 4 is a graph showing a B-H curve of a permanent magnet at a normal temperature (20° C.) as a solid curve and another B-H curve thereof at 100° C. as a dotted curve.\n\n[0039]FIG. 5 is a flowchart showing the outline of a magnetic field analysis method according to the present invention.\n\n[0040]FIG. 6 shows how to modify the B-H curve in the magnetic field analysis method of the present invention.\n\n[0041]FIG. 7 shows a test model for use in a specific example of the present invention.\n\n[0042]FIG. 8(a) is a graph showing the temperature dependence of a magnetic flux density obtained by calculations and measurements, and FIG. 8(b) is a graph showing the temperature dependence of a demagnetizing factor obtained by calculations and measurements.\n\n[0043]FIG. 9(i) is a graph showing the magnetic flux density distribution at the center of a magnet at 20° C., and FIG. 9(ii) is a graph showing the magnetic flux density distribution at the center of the magnet at 100° C.\n\n[0044]FIG. 10(i) is a graph showing the magnetic flux density distribution near the surface of a magnet at 20° C., and FIG. 10(ii) is a graph showing the magnetic flux density distribution near the surface of the magnet at 100° C.\n\nDETAILED DESCRIPTION OF PREFERRED EMBODIMENTS\n\n[0045]According to the present invention, instead of paying attention to just one site of a permanent magnet that has the smallest permeance coefficient, the B-H curves of the demagnetized permanent magnet at respective sites thereof are obtained based on the permeance coefficients that have been calculated for those sites of the permanent magnet. If a permanent magnet is used under an environment that has such a high temperature (e.g., 100° C.) as to possibly produce thermal demagnetization, then the thermal demagnetization may or may not be produced according to a specific position in the permanent magnet and the degree of demagnetization also changes from one position to another. However, according to the present invention, by calculating B-H curves for respective sites of the permanent magnet, magnetic field analysis can be carried out appropriately based on a number of those B-H curves obtained. It should be noted that the operating temperature of 100° C. is just an example. As long as B-H curve data are obtained at multiple preset temperatures, the demagnetization effect may be estimated at an arbitrarily selected one of those temperatures. Such a method of estimating the degree of demagnetization effect (i.e., demagnetizing factor) can be used very effectively in designing a magnetic circuit for a permanent magnet motor in which demagnetization is likely to be produced due to a locking phenomenon.\n\n[0046]Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.\n\n[0047]In the following preferred embodiment, magnetic field analysis is carried out using finite elements.\n\n[0048]First, the procedure of this preferred embodiment will be outlined with reference to FIG. 5.\n\n[0049]In the first step (STEP 1), magnetic field analysis is carried out at a normal temperature (which will be referred to herein as a “first temperature T1 (e.g., 20° C.)”) under the given conditions about the material and shape of the magnet. By performing this magnetic field analysis, magnetic flux density values Bm are extracted for respective sites of the magnet and their associated permeance coefficients are calculated. In this process step, a known magnetic field analysis method may be used. As computer software for magnetic field analysis, “JMAG” produced by Japan Research Institute, Ltd. may be used. This initial magnetic field analysis is preferably carried out by a finite element method in which the permanent magnet to be analyzed is divided into a number of very small elements. When the magnetic flux density values Bm of respective finite elements in the permanent magnet are obtained by a known magnetic field analysis method or analyzer, permeance coefficients Pc are obtained from those Bm values. In dividing the magnet into a number of very small elements by the finite element method, the number of divisions (i.e., the number of the finite elements=the number of meshes) may be around 100, for example. In this process step, the initial magnetic field analysis may be done with normal temperature B-H curve data for use in an ordinary magnetic field analysis. Such data may be included in a database that is attached to magnetic field analysis software on the market. Alternatively, the user of the magnetic field analysis software may collect B-H curve data separately and compile them as a database.\n\n[0050]Next, in STEP 2, based on the permeance coefficients Pc of the respective sites (i.e., finite elements) of the magnet and the operating temperature of the magnet (which will be referred to herein as a “second temperature T2 (e.g., 100° C.)”), modified B-H curves are obtained for the respective sites of the magnet that has been subjected to thermal demagnetization at least partially. In this case, the “modification” means generating post-demagnetization B-H curve data.\n\n[0051]Thereafter, based on the modified B-H curves for the respective sites, magnetic field analysis is carried out at another temperature (e.g., at a normal temperature of 20° C.), which is different from the second temperature T2 at which the thermal demagnetization has been produced. The magnetic field analysis at this stage is characterized by being carried out on the modified B-H curve data, not the B-H curve data included in the magnetic field analysis software mentioned above.\n\n[0052]It should be noted that although the demagnetization may or may not occur, and the degree of that demagnetization is variable, depending on the demagnetizing force Hd and the temperature, the effects of the demagnetizing force Hd are already taken into consideration when the magnetic flux density values of the magnet are obtained during the initial analysis performed at the normal temperature of 20° C. In other words, different demagnetizing forces Hd are applied to permanent magnets of various different shapes or to respective positions in a single permanent magnet. In this example, however, different magnetic flux densities Bm, associated with those various demagnetizing forces Hd, are already obtained. For that reason, when the B-H curves for the respective finite elements of the given magnet are modified in STEP 2 in view of the demagnetization, only the thermal demagnetization, which changes with the, temperature, needs to be taken into account.\n\n[0053]In the next STEP 3, the B-H curve data that have been obtained in the previous STEP 2 (i.e., the modified B-H curve data) are input to the respective finite elements of the magnet. Thereafter, magnetic field analysis is carried out at 20° C. (which will be referred to herein as a “third temperature T3”), for example. This magnetic field analysis is different from that of STEP 1 in the following respect. Specifically, although the same B-H curve data is used in STEP 1 to carry out magnetic field analysis on the respective finite elements of the magnet, the modified B-H curve data, which have been obtained for the individual finite elements of the magnet in view of their effects of the thermal demagnetization, are used in the magnetic field analysis of STEP 3.\n\n[0054]Hereinafter, it will be described in further detail how to generate the post-thermal-demagnetization B-H curve data (i.e., the modified B-H curve data).\n\n[0055]The B-H curve data is modified in the following procedure based on the permeance coefficients Pc that have been obtained through the initial analysis for the respective sites (i.e., the respective finite elements) and on the operating temperature T2 of the permanent magnet. In this example, the thermal demagnetization is supposed to have been produced when the permanent magnet was used at a temperature T2 of 100° C. In this case, the temperature T2 is higher than the first temperature T1. However, in analyzing a magnet that produces demagnetization when cooled (e.g., a ferrite magnet), the temperature T2 should be set lower than the first temperature T1.[0056](STEP I) First, magnetic field analysis is carried out based on the data points representing the 20° C. B-H curve (i.e., A1-B1-C1-D1), thereby calculating permeance coefficients Pc for the respective finite elements as described above. The 20° C. B-H curve data is read out from the database of magnetic field analysis software. Also, the permeance coefficients Pc calculated are stored in the memory of a computer so as to be associated with the respective finite elements;[0057](STEP II) Next, data points representing a 100° C. B-H curve (i.e., A2-B2-C2-D2) are read out from the database of the magnetic field analysis software;[0058](STEP III) The intersection B3 between the 100° C. B-H curve (A2-B2-C2-D2) and the operating line representing the permeance coefficient Pc is obtained for each of those finite elements;[0059](STEP IV) An equivalent remanence Br (A3) at the temperature at which the thermal demagnetization was produced (i.e., 100° C. in this case) is calculated based on the value of permeability λrec that is prestored in the database. This remanence Br (A3) is also obtained for each of the multiple finite elements; (STEP V) The remanence Br (A4) when the magnet temperature is brought back to the normal temperature of 20° C. (=T3) is calculated based on the equivalent Br (A3) at 100° C. at which the demagnetization was produced and on a temperature coefficient. This remanence Br (A4) is also obtained for each of the multiple finite elements; and[0060](STEP VI) Data representing a B-H curve (A4-B4-C1-D1) after the magnet temperature has been brought back to the normal temperature of 20° C. are generated based on the Br (A4) back at the normal temperature of 20° C. and the permeability λrec. The B-H curve data obtained in this manner are the “modified B-H curve data”, which are calculated for the respective finite elements of the magnet. The modified B-H curve data are added to the database. And by carrying out magnetic field analysis based on the additional data by a known technique, the remanence distribution at an arbitrary temperature T3 after the thermal demagnetization can be easily calculated using existent magnetic field analysis software.\n\n[0061]The respective processing steps of this magnetic field analysis are carried out by installing a program, which makes a computer execute these calculations (or computations), into the computer and by running that program. Such a program can be easily created by generating the modified B-H curve data and by combining an additional module for adding them to the database with a known magnetic field analysis software program.\n\n[0062]A magnetic field analyzer, in which such a program has been installed, includes memory means for storing, as a database, B-H curve data of a selected permanent magnet at multiple temperatures and computing means. The computing means carries out the steps of: calculating permeance coefficients at multiple sites in a permanent magnet based on B-H curve data of the permanent magnet at a first temperature T1 as stored in the memory means; and deriving modified B-H curve data for those sites of the demagnetized permanent magnet based on B-H curve data of the permanent magnet at a second temperature T2, which is different from the first temperature T1, and the permeance coefficients as stored in the memory means. In these processing steps, similar computations may be carried out by calculating other numerical values that are dependent on the permeance coefficients (e.g., numerical values proportional to the permeance coefficients), instead of the permeance coefficients themselves. The computations may also be carried out with the reverse magnetic field included in these parameters.\n\n[0063]In the magnetic field analysis method and magnetic field-analyzer of the present invention, when a magnetic circuit is operated under an environment in which thermal demagnetization can be produced, magnetic field analysis is carried out on multiple permanent magnet models and an appropriate one of the permanent magnets is selected in accordance with the result of the magnetic field analysis, thereby obtaining an excellent magnetic circuit at a low cost.\n\nEXAMPLE\n\n[0064]In this specific example, the fluxes, magnitudes of demagnetization, and magnetic flux density distributions of the following sample magnets were calculated by the magnetic field analysis method of the present invention and compared with actually measured values.\n\nSample Magnets\n\n[0065]Magnet material: rare-earth permanent magnets NEOMAX-40BH (produced by NEOMAX Co., Ltd. (formerly Sumitomo Special Metals Co., Ltd.))(Br=1.309 T)[0066]Magnet dimensions: a thickness of 5 mm×a vertical length of 25 mm×a horizontal width of 79 mm[0067]Number of magnets: two (Sample Magnet A and Sample Magnet B)\n\n[0068]These magnets were magnetized such that their magnetization direction was parallel to their thickness direction. In this example, rare-earth magnets were used, and therefore, demagnetization was produced at a temperature higher than a normal temperature.\n\n[0069]In comparing the values calculated by the magnetic field analysis method of the present invention with the actually measured values, the test model shown in FIG. 7 was used and the magnetic flux densities were compared at the positions shown in FIG. 7.\n\n[0070]FIG. 8(a) shows the temperature dependences of the calculated and measured fluxes. In the graph of FIG. 8(a), the abscissa represents the operating temperature of the permanent magnet and the ordinate represents the flux. FIG. 8(b) shows the temperature dependences of the calculated and measured demagnetizing factors. In the graph of FIG. 8(b), the abscissa represents the operating temperature of the permanent magnet and the ordinate represents the demagnetizing factor. In these graphs, the calculated values are plotted as the solid circles ● and the measured values of Samples A and B are plotted as the open triangles Δ and the open squares □, respectively.\n\n[0071]The following Table 1 summarizes these results:\n\n[0072]TABLE 1CalculatedMeasured AMeasured BTemp.FluxDemagnetizingFluxDemagnetizingFluxDemagnetizing(° C.)(mWb)Factor (%)(mWb)Factor (%)(mWb)Factor (%)200.38600.39900.40400.38600.39900.40600.384−0.50.397−0.50.40800.36−6.70.382−4.30.377−5.81000.309−19.90.329−17.50.328−18\n\n[0073]As can be seen from FIG. 8 and Table 1, the calculated values and actually measured values matched with each other very closely. Among other things, the difference between the calculated and actually measured demagnetizing factors was just about 2%. Thus, the present inventors confirmed that the demagnetization phenomenon could be analyzed highly precisely according to the present invention.\n\n[0074]Next, the calculated and measured magnetic flux density distributions will be described.\n\n[0075]FIG. 9(i) shows 20° C. magnetic flux density distributions for the center portion of the magnet shown in FIG. 7, while FIG. 9(ii) shows 100° C. magnetic flux density distributions for the same center portion of the magnet. FIG. 10(i) shows 20° C. magnetic flux density distributions near one edge of the magnet, while FIG. 10(ii) shows 100° C. magnetic flux density distributions for the same edge of the magnet.\n\n[0076]As is clear from FIGS. 9 and 10, the calculated post-demagnetization magnetic flux density distributions were found very closely matching with the actually measured ones.\n\n[0077]Also, comparing the portions (i) and (ii) of FIG. 9 or 10, it can be seen that the magnetic flux density at both edges of the magnet hardly decreased even at 100° C. but that the magnetic flux density at the center portion thereof decreased noticeably. That is to say, the present inventors confirmed, by calculations and actual measurements, that in the same sample magnet, thermal demagnetization hardly occurred even at 100° C. in portions with relatively large permeance coefficients (e.g., portions near the edges of the magnet) but was produced significantly in portions with relatively small permeance coefficients (e.g., the center portion of the magnet).\n\n[0078]According', '发明背景 \n\n [0001] 1.发明领域 \n\n [0002] 本发明涉及一种在包括永久磁铁的磁路上进行磁场分析的方法和装置,该永久磁铁的性质会由于去磁而改变。 本发明还涉及通过使用这种用于磁场分析的方法和设备来制造永磁体的方法。 \n\n [0003] 2.相关技术的描述 \n\n [0004] 近来,为了更有效地设计磁路并进一步减小其尺寸,有时已经使用计算机仿真技术来进行磁场分析。 可以通过诸如有限元法之类的方法来执行这种磁场分析,在有限元法中,通过将各种形状的永磁体分成大量的非常小的元素(或网格)来评估它们。 随着那些磁场分析技术的发展,已经可以高精度地计算磁路中的磁通密度分布或磁通量。 例如,在以下现有技术文件中描述了常规的磁场分析方法:   [0005]文档:谷口靖人和其他四篇论文,“考虑偏斜的永磁电动机的三维磁场分析”,[在线],[2002年10月2日在Internet上搜索并找到],  .  \n\n [0006] 当稀土永磁体被加热时,其磁化强度降低(这称为“退磁现象”)。 同时,铁氧体磁体在冷却时产生退磁现象。 这些退磁现象包括“可逆退磁现象”,其中磁体在恢复到正常温度时恢复其原始磁化;以及“不可逆退磁现象”,其中磁体即使恢复到正常温度也无法恢复其原始磁化。 可逆退磁的大小随磁体的温度线性变化,其速率称为“可逆温度系数”。 另一方面,不可逆退磁是指由于加热或冷却而导致的磁化的降低,但是即使当磁体温度再次回到室温时也不能被补偿。 \n\n [0007] 例如,假设在100℃下使用永磁体。在这种情况下,即使在产生不可逆的退磁之后将磁体的温度降低至常温(20℃),磁体的磁化也是如此。 保持低位,无法完全恢复其原始水平。 一旦发生这种退磁,磁体的磁滞曲线就会改变其形状。 \n\n [0008] 在对包括永磁体的磁路进行磁场分析时,需要在考虑永磁体的退磁的情况下进行磁场分析。 然而,常规的退磁估计方法仅确定在给定的工作条件(例如温度和外部磁场)下永磁体中是否发生退磁。 在下文中,将参考图3至图6描述这一点。  1至3。 \n\n [0009] 图。 图1示出了板状的永磁体。 图1中所示的永磁体包括: 在其厚度方向上将图1的磁化。 图。 图2是示意性地示出由该永磁体产生的磁力线的截面图。 从图可以看出, 如图2所示,从磁体的端部附近发出的磁力线的磁路比从磁体的中央部分发出的磁力线的磁路短。 \n\n [0010] 一旦永磁体被磁化,该永磁体就产生N极和S极。 因此,如图2所示, 如图2所示,产生了磁通量(即磁力线),以便从N极朝向S极朝向永磁体外部。 在这种情况下,永磁体内部也产生了从N极朝向S极的另一磁通。 磁体内部产生的磁通量的作用方向是减小永磁体的磁化强度。 因此,将由这种磁通形成的磁场称为“退磁场(自退磁力)”的原因。  N极和S极越近,退磁力越大。 在图1所示的板状的永磁体中,磁极的形状为: 如图1所示,板厚与板面积之比越大,退磁力越大。 \n\n [0011] 图。 图3是示意性地表示图2所示的永磁体的退磁曲线的一部分的图。 如本文中所使用的,“退磁曲线”是指磁滞曲线的第二或第三象限部分,其通过在永磁体具有饱和磁通密度的状态下开始单调改变磁场而获得。 饱和磁极化。 图。 图3是曲线图,其中,纵坐标表示磁通密度B,横坐标表示外部磁场H,并且仅示出第二象限部分。 在图所示的图中, 在图3中,将消磁曲线绘制为近似线。 然而,即使磁体的磁滞曲线的至少一部分是线性的,该磁滞曲线在本文中也将被称为“ B-H曲线”。 \n\n [0012] 在图所示的图中, 在图3中,在B-H曲线上指定了与消磁力Hd相对应的点(即,工作点)。 在该工作点处的磁通密度等于Bm,将工作点连接到曲线图原点的线称为“工作线”。 并且,将工作线的斜率的绝对值称为“导磁系数Pc”。 磁通密度Bm是取决于磁导系数Pc的数值之一。 \n\n [0013] 无论是否对永磁体施加外磁场,总是存在退磁力Hd。 因此,从未施加外部磁场的永磁体发出的磁通密度等于与工作点相对应的磁通密度Bm。 一般说来,永磁体的工作点随磁体的形状或其周围条件而变化。 严格来说,永磁体的工作点也可以从一个位置改变到另一个位置。 也就是说,永磁体的磁导系数Pc在该永磁体中不是恒定的,而是在永磁体中从一个位置改变到另一位置。 \n\n [0014] 如图1所示。 如图2所示,磁路越短,退磁力Hd越小,磁导系数Pc越大。 换句话说,磁路越长,退磁力Hd越大,磁导系数Pc越小。 因此,在具有图1所示的形状的永磁体中,具有如下特征: 如图1所示,磁导系数Pc在磁体的中心处最小,在磁体的角部处最大。 在图 在图1中,Pc(min)表示渗透系数Pc最小的部位,Pc(max)表示渗透系数Pc最大的部位。 \n\n [0015] 以此方式,永磁体的磁导系数Pc根据永磁体中的特定位置而变化。 另一方面,在导磁系数Pc最小的地方产生退磁。 因此,在常规的磁场分析方法中,获得磁体的各个部位(即,有限元的数量)处的磁通密度值Bm,然后获得磁通量最小的部位的磁导系数Pc(min)。 密度Bm通过计算机模拟技术计算。 此后,通过将具有这样的磁导系数Pc(min)的工作线与在工作温度下的B-H曲线进行比较,确定该部位是否可以被消磁。 在下文中,将参考图4描述这种常规的退磁估计方法。  4。 \n\n [0016] 图。 图4是将常温(20℃)下的永磁体的B-H曲线表示为实线,将其在100℃下的另一B-H曲线表示为点线的图。 各个温度下的B-H曲线数据存储在计算机的存储器中。 在馈送有关永磁体形状的数据之后,通过有限元方法获得磁体中各个位置的工作线。 \n\n [0017] 图的图。 图4还示出了两种类型的磁体C和D的两条工作线。假定工作线C是磁体C中磁导系数Pc最小的部位的工作线,而假定工作线D为磁体C的磁导率Pc最小。 在磁体D中具有最小磁导系数Pc的位置的工作线。而且,为简单起见,假定这两个磁体C和D共享相同的BH曲线。 \n\n [0018] 从图可以看出, 在图4中,工作线C和20℃BH曲线之间的交点以及工作线C和100℃BH曲线之间的交点都位于其关联的BH的拐点(即拐点)上方 曲线。 因此,期望即使在100℃的工作环境下,具有更大的磁导系数Pc(min)的磁体C也不会被消磁。 \n\n [0019] 另一方面,尽管具有较小磁导系数Pc(min)的磁体D的工作线与20°C的交点位于其相关的BH曲线的拐点(即拐点)上方 ,磁体D的工作线与100°C的BH曲线的交点位于其关联的BH曲线的拐点(即拐点)下方。 因此,可以判断出磁导系数Pc(min)较小的磁铁D在20℃下不会消磁,而在100℃下会消磁。 \n\n [0020] 这种常规的磁场分析方法仅确定永磁体中具有最小磁导系数的部位是否被消磁。 因此,即使磁导率系数最小的部分占永久磁铁整体的很小的比例,在实践中几乎不发生退磁问题,但仍可以判定为“应发生退磁”。 \n\n [0021] 而且,常规的磁场分析方法不能给出退磁发生后的磁通密度分布是什么样的问题的任何答案。 也就是说,常规的磁场分析方法仅对每个磁体进行了退磁的可能性的测试,并且不能通过数值分析来显示通量和磁通密度分布由于退磁而将如何改变。 \n\n [0022] 为了克服上述问题,本发明的主要目的是提供一种用于磁场分析的方法和装置,不仅有助于确定永磁体是否会发生退磁,而且有助于计算其磁通密度。 消磁后分布。 \n\n 发明内容 \n\n [0023] 根据本发明的磁场分析方法包括以下步骤:基于永磁体在第一温度下的BH曲线数据,计算永磁体中多个位置处的磁导系数和/或取决于磁导系数的数值。  T1; 并基于第二温度T2下的永磁体的BH曲线数据和磁导率,得出各个位置的永磁体的修改后的BH曲线数据,所述修改后的BH曲线数据已在不同于第一温度T1的第二温度T2下运行 存储在存储装置中的系数或数值。 \n\n [0024] 在一个优选实施例中,修改后的B-H曲线数据是在不同于第二温度T2的第三温度下得出的。 \n\n [0025] 在另一个优选实施例中,该方法还包括将修改后的B-H曲线数据存储在计算器的存储器中的步骤。 \n\n [0026] 根据本发明的磁场分析仪包括用于在多个温度下存储所选择的永磁体的B-H曲线数据的存储装置和计算装置。 所述计算装置执行以下步骤:基于永磁体在第一温度T1下的BH曲线数据,计算所述永磁体中多个位置处的磁导系数和/或取决于磁导系数的数值,所述第一温度T1下存储的永磁体的BH曲线数据 手段; 并基于第二温度T2下的永磁体的BH曲线数据和磁导率,得出各个位置的永磁体的修改后的BH曲线数据,所述修改后的BH曲线数据已在不同于第一温度T1的第二温度T2下运行 存储在存储装置中的系数或数值。 \n\n [0027] 在一优选实施例中,计算装置将修改后的B-H曲线数据存储在存储装置中。 \n\n [0028] 定义根据本发明的磁场分析程序,以使计算机执行以下步骤:计算永磁体中多个位置处的磁导系数和/或基于BH曲线的磁导系数所依赖的数值 第一温度T1下永磁体的数据; 并基于第二温度T2下的永磁体的BH曲线数据和磁导率,得出各个位置的永磁体的修改后的BH曲线数据,所述修改后的BH曲线数据已在不同于第一温度T1的第二温度T2下运行 系数或数值。 \n\n [0029] 在一个优选实施例中,使计算机在不同于第二温度T2的第三温度下导出修正的B-H曲线数据。 \n\n [0030] 在另一个优选实施例中,使计算机进一步执行将修改的B-H曲线数据存储在计算器的存储器中的步骤。 \n\n [0031] 在根据本发明的用于磁场分析的附加模块程序中,磁场分析程序使计算机执行以下步骤:计算永磁体中多个位置的磁导系数和/或取决于磁导率的数值 基于永磁体在第一温度T1的BH曲线数据的系数; 然后根据第二温度T2处的永磁体的BH曲线数据和相应温度得出各个位置的永久磁体的修改后的BH曲线数据,该数据已在比第一温度T1高的第二温度T2下运行。 磁导系数或数值。 \n\n [0032] 在一个优选实施例中,使计算机在不同于第二温度T2的第三温度下导出修正的B-H曲线数据。 \n\n [0033] 在另一个优选实施例中,使计算机进一步执行将修改的B-H曲线数据存储在计算器的存储器中的步骤。 \n\n [0034] 根据本发明的用于制造磁路的方法包括以下步骤:通过所描述的任何磁场分析方法对磁路进行磁场分析,该磁路包括已在第二温度T2退磁的多个永磁体。 以上; 并基于磁场分析的结果来制造包括所选择的永磁体之一的磁路。 \n\n 附图的简要说明 \n\n [0035] 图。 图1是示出在厚度方向上磁化的长方体永磁体的立体图。 \n\n [0036] 图。 图2是示意性地示出由图1所示的永磁体产生的磁力线的截面图。  1。 \n\n [0037] 图。 图3是示意性地表示图2所示的永磁体的退磁曲线的一部分的图。  1。 \n\n [0038] 图。 图4是将常温(20℃)下的永磁体的B-H曲线表示为实线,将其在100℃下的另一B-H曲线表示为点线的图。 \n\n [0039] 图。 图5是示出根据本发明的磁场分析方法的概要的流程图。 \n\n [0040] 图。 图6示出了在本发明的磁场分析方法中如何修改B-H曲线。 \n\n [0041] 图。 图7示出了用于本发明的特定示例中的测试模型。 \n\n [0042] 图。  8( a 图2是示出通过计算和测量获得的磁通密度的温度依赖性的曲线图。  8( b )是示出通过计算和测量获得的消磁因子的温度依赖性的图。 \n\n [0043] 图。  9( i )是示出在20℃下在磁体的中心处的磁通密度分布的图,并且 9( ii )是示出在100°C下磁体中心的磁通密度分布的图。 \n\n [0044] 图。  10( i 图2是示出在20℃下磁体表面附近的磁通密度分布的图。  10( ii )是示出在100°C下磁体表面附近的磁通密度分布的图。 \n\n 具体实施方式 \n\n [0045] 根据本发明,不仅仅关注具有最小磁导系数的永磁体的一个位置,而是基于针对磁导率和磁阻系数计算出的磁导率来获得去磁的永磁体在各个位置处的BH曲线。 永久磁铁的位置。 如果在具有可能产生热退磁的高温(例如100℃)的环境下使用永磁体,则根据或避免永磁体中的特定位置产生热退磁,并且 消磁度也从一个位置改变到另一位置。 然而,根据本发明,通过计算永磁体的各个部位的B-H曲线,可以基于所获得的多个B-H曲线适当地进行磁场分析。 应当注意的是,100℃的工作温度仅是示例。 只要在多个预设温度下获得B-H曲线数据,就可以在那些温度中任意选择一个条件下估计退磁效果。 这样的估计退磁效果的程度(即退磁系数)的方法可以非常有效地用于设计用于永磁电动机的磁路,在该永磁电动机中,由于锁定现象而可能产生退磁。 \n\n [0046] 在下文中,将参考附图描述本发明的优选实施例。 \n\n [0047] 在下面的优选实施例中,使用有限元进行磁场分析。 \n\n [0048] 首先,将参考图2概述该优选实施例的过程。  5, \n\n [0049] 第一步(STEP 1 ),在关于磁体的材料和形状的给定条件下,在常温(在此称为“第一温度T1(例如20℃)”)下进行磁场分析。 通过执行该磁场分析,提取磁体的各个部位的磁通密度值Bm,并计算它们的相关磁导系数。 在该处理步骤中,可以使用已知的磁场分析方法。 作为用于磁场分析的计算机软件,可以使用日本研究所(Japan Research Institute,Ltd。)生产的“ JMAG”。 该初始磁场分析优选地通过有限元方法来进行,其中将要分析的永磁体分为多个非常小的元素。 当通过已知的磁场分析方法或分析仪获得永磁体中各个有限元的磁通密度值Bm时,从这些Bm值获得磁导系数Pc。 在通过有限元方法将磁体划分为许多非常小的元素时,划分的数量(即,有限元素的数量=网格的数量)可以例如为大约100。 在该处理步骤中,可以利用用于普通磁场分析的常温B-H曲线数据来进行初始磁场分析。 这样的数据可以被包括在附接到市场上的磁场分析软件的数据库中。 或者,磁场分析软件的用户可以分别收集B-H曲线数据并将其编译为数据库。 \n\n [0050] 接下来,在STEP中 2 ,基于磁体的各个部位(即,有限元)的磁导系数Pc和磁体的工作温度(在本文中将其称为“第二温度T2(例如100℃)”) 对于已经至少部分地进行了热去磁的磁体的各个部位,获得修正的BH曲线。 在这种情况下,“修改”是指生成退磁后的B-H曲线数据。 \n\n [0051] 此后,基于各个位置的修改后的BH曲线,在另一个温度(例如,在20°C的常温下)进行磁场分析,该温度不同于热去磁所处的第二温度T2 已生产。 在此阶段的磁场分析的特征在于,对修改后的B-H曲线数据而不是上述磁场分析软件中包括的B-H曲线数据进行分析。 \n\n [0052] 应当注意,尽管可能发生或不发生退磁,并且该退磁的程度是可变的,但是取决于退磁力Hd和温度,当磁通密度时已经考虑了退磁力Hd的影响。 在20℃的常温下进行的初始分析期间获得磁体的值。换句话说,将不同的退磁力Hd施加于各种不同形状的永磁体或单个永磁体中的各个位置。 然而,在该示例中,已经获得了与那些各种退磁力Hd相关联的不同的磁通密度Bm。 因此,在STEP中修改给定磁体的各个有限元的B-H曲线时 2  考虑到退磁,仅需要考虑随温度变化的热退磁。 \n\n [0053] 在下一步 3 ,上一步中获得的B-H曲线数据 2  (即修改后的B-H曲线数据)输入到磁铁的各个有限元。 之后,例如在20℃(在此称为“第三温度T3”)下进行磁场分析。 磁场分析与STEP的不同 1  在以下方面。 具体来说,尽管在STEP中使用了相同的B-H曲线数据 1  为了对磁体的各个有限元进行磁场分析,在磁场分析中使用了修改后的BH曲线数据,该数据是针对磁体的各个有限元而获得的,这些数据是由于它们的热去磁作用而获得的 STEP的 3 。 \n\n [0054] 在下文中,将进一步详细描述如何生成热去磁后B-H曲线数据(即,修改后的B-H曲线数据)。 \n\n [0055] 基于通过对各个部位(即,各个有限元)的初始分析而获得的磁导系数Pc和基于永磁体的工作温度T2,在以下过程中修改B-H曲线数据。 在该示例中,假定当在100℃的温度T2下使用永磁体时产生了热退磁。在这种情况下,温度T2高于第一温度T1。 然而,在分析在冷却时产生退磁的磁体(例如,铁氧体磁体)时,温度T2应设定为低于第一温度T1。   [0056](步骤I)首先,基于代表20℃的B-H曲线(即,A)的数据点进行磁场分析。 1 -B 1 -C 1 -D 1 ),从而如上所述计算各个有限元的磁导系数Pc。 从磁场分析软件的数据库中读出20℃的B-H曲线数据。 同样,计算出的磁导系数Pc被存储在计算机的存储器中,以便与各个有限元相关联; [0057](步骤II)接下来,代表100℃的B-H曲线的数据点(即,A 2 -B 2 -C 2 -D 2 )从磁场分析软件的数据库中读出; [0058](步骤III)交叉路口B 3  在100°C B-H曲线之间(A 2 -B 2 -C 2 -D 2 ),并为每个有限元获得代表磁导系数Pc的工作线; [0059](步骤IV)等效剩磁B r  (一种 3 )在产生热退磁的温度(在这种情况下为100°C)下基于磁导率λ的值计算  记录 预先存储在数据库中。 剩磁B r  (一种 3 也可以为多个有限元中的每一个获得);  (步骤V)剩磁B r  (一种 4 )当磁体温度恢复到正常温度20°C时(= T3)基于等效B r  (一种 3 )在产生退磁的100℃和温度系数上。 剩磁B r  (一种 4 也可以为多个有限元中的每一个获得); 和 [0060](步骤VI)代表B-H曲线的数据(A 4 -B 4 -C 1 -D 1 )在磁铁温度恢复到正常温度20°C之后,根据B r  (一种 4 )回到常温20°C和磁导率λ  记录 。 以这种方式获得的BH曲线数据是针对磁体的各个有限元计算的“修改后的BH曲线数据”,将修改后的BH曲线数据添加到数据库中,并且基于该磁场进行磁场分析。 通过使用已知技术的附加数据,可以使用现有的磁场分析软件轻松计算出热退磁后任意温度T3的剩磁分布。  \n\n [0061] 磁场分析的各个处理步骤是通过在计算机中安装程序(使计算机执行这些计算(或多个计算))并运行该程序来执行的。 通过生成修改后的B-H曲线数据并通过将用于将其添加到数据库的附加模块与已知的磁场分析软件程序进行组合,可以轻松创建此类程序。 \n\n [0062] 装有这种程序的磁场分析仪包括存储装置和计算装置,该存储装置用于将所选择的永磁体在多个温度下的B-H曲线数据存储为数据库。 该计算装置执行以下步骤:基于存储在存储装置中的第一温度T1下的永磁体的B-H曲线数据,计算永磁体中多个位置的磁导系数;以及 并基于不同于第一温度T1的第二温度T2下的永磁体的B-H曲线数据以及存储在存储装置中的磁导系数,得出去磁的永磁体的那些位置的修改后的B-H曲线数据。 在这些处理步骤中,可以通过计算取决于磁导系数的其他数值(例如,与磁导系数成比例的数值)而不是磁导系数本身来进行类似的计算。 这些计算还可以利用这些参数中包括的反向磁场来进行。 \n\n [0063] 在本发明的磁场分析方法和磁场分析仪中,当在能够产生热去磁的环境下操作磁路时,对多个永磁体模型进行磁场分析,并且适当地选择其中之一。 根据磁场分析的结果选择永磁体,从而以低成本获得优良的磁路。 \n\n 例 \n\n [0064] 在该具体示例中,通过本发明的磁场分析方法来计算以下样本磁体的通量,退磁幅度和磁通密度分布,并将其与实际测量值进行比较。 \n\n 磁铁样本 \n\n   [0065]磁铁材料:稀土永磁体NEOMAX-40BH(由NEOMAX Co.,Ltd.生产(前住友特殊金属有限公司))(B r = 1.309吨) [0066] 磁铁尺寸:厚度5毫米×垂直长度25毫米×水平宽度79毫米[0067] 磁铁数量:两个(样本磁铁A和样本磁铁B) \n\n [0068] 这些磁体被磁化,使得它们的磁化方向平行于它们的厚度方向。 在该示例中,由于使用了稀土磁体,因此在高于常温的温度下产生了退磁。 \n\n [0069] 在将通过本发明的磁场分析方法计算出的值与实际测量值进行比较时,图3所示的测试模型被建立。 使用图7所示的位置,并且在图6所示的位置处比较了磁通密度。  7。 \n\n [0070] 图。  8( a )显示了计算和测量的通量的温度依赖性。 在图的图中,  8( a ),横坐标表示永磁体的工作温度,纵坐标表示磁通量。 图。  8( b )显示了计算和测量的退磁因子的温度依赖性。 在图的图中,  8( b ),横坐标表示永磁体的工作温度,纵坐标表示退磁系数。 在这些图中,将计算值绘制为实心圆●,将样品A和B的测量值绘制为空心三角形Δ和空心正方形□。 \n\n [0071] 下表1汇总了这些结果: \n\n [0072] \n\n    表格1  已计算 被测A 测得的B  温度 Flux 消磁 Flux 消磁 Flux 消磁  (°C) (兆瓦) 系数(%) (兆瓦) 系数(%) (兆瓦) 系数(%)  20 0.386 0 0.399 0 0.4 0  40 0.386 0 0.399 0 0.4 0  60 0.384 −0.5 0.397 −0.5 0.4 0  80 0.36 −6.7 0.382 −4.3 0.377 −5.8  100 0.309 −19.9 0.329 -17.5 0.328 −18  \n\n [0073] 从图可以看出, 如图8和表1所示,计算值和实际测量值非常接近。 除其他因素外,计算出的和实际测量的退磁系数之间的差异仅为2%。 因此,本发明人确认了根据本发明可以高度精确地分析退磁现象。 \n\n [0074] 接下来,将描述计算和测量的磁通密度分布。 \n\n [0075] 图。  9( i )示出了图1所示的磁体的中心部分的20℃的磁通密度分布。  7,而图。  9( ii )显示了磁体的相同中心部分的100°C的磁通密度分布。 图。  10( i )显示了磁体的一个边缘附近的20°C的磁通密度分布,而 10( ii )示出了磁体的相同边缘的100℃的磁通密度分布。 \n\n [0076] 从图1和2清楚可见。 从图9和10中可以看出,计算出的退磁后磁通密度分布与实际测量的磁通密度分布非常接近。 \n\n [0077] 另外,比较图的部分(i)和(ii)。  9或 10 可以看出,即使在100℃下,磁体的两个边缘处的磁通密度也几乎没有降低,但是在其中心部分的磁通密度显着降低。 也就是说,本发明人通过计算和实际测量证实,在相同的样品磁体中,即使在100℃下,在具有相对大的磁导系数的部分(例如,磁体的边缘附近的部分)也几乎不会发生热退磁。  ),但是在具有相对较小的磁导系数的部分(例如,磁体的中心部分)中产生的明显。 \n\n [0078] 根据本发明,针对永磁体的各个非常小的元素重新定义(即修改)了热消磁后的B-H曲线,从而使得能够进行消磁后的磁场分析,这在现有技术中从未进行过。 也就是说,不仅可以估计出永磁体中发生退磁的可能性,而且还可以计算出退磁后的磁通密度分布。 因此,通过选择适当的永磁体可以以降低的成本制造磁路。');
INSERT INTO `os_patent_instruction_text` VALUES (12998, 22827, NULL, NULL);
INSERT INTO `os_patent_instruction_text` VALUES (12999, 22828, 'FIELD OF THE INVENTION\n\n[0001]The present invention relates to a sintered R-Fe-B permanent magnet having an improved coercivity iHc due to a desired amount of P and its production method, particularly to a high-performance, radially anisotropic sintered R-Fe-B permanent magnet excellent in the uniformity of a surface magnetic flux density, and its efficient production method.\n\nBACKGROUND OF THE INVENTION\n\n[0002]R-Fe-B permanent magnets have been produced for many years by so-called dry molding methods, in which dry fine powder is molded in a die while applying a magnetic field. In the dry molding method, the concentration of oxygen in a nitrogen or Ar gas, a pulverization medium, is usually controlled in a desired range by introducing a trace amount of oxygen into a jet mill in the fine pulverization of a coarse starting material powder in the jet mill. This is to cause the oxidization of fine powder surfaces. Finely pulverized powder would be burned without this oxidation treatment, when brought into contact with the air. The fine powder subjected to the oxidation treatment has an oxygen content of 5000-6000 ppm, and the sintered body obtained from this fine powder has an oxygen content of 4000-5000 ppm. Most of oxygen in the sintered body is bonded to rare earth elements such as Nd, etc., existing as oxides in the grain boundaries. To supplement an oxidized part of the rare earth elements, the total amount of rare earth elements in the sintered body should be increased, resulting in decrease in the saturation magnetic flux density of the sintered magnet.\n\n[0003]To solve the problems of the dry molding method, JP 7-57914 A proposes a method for producing a sintering rare earth magnet comprising the steps of injecting a mixture of rare earth magnet powder and a mineral oil or a synthetic oil under pressure into a die cavity, to which an oriented magnetic field is applied, wet-molding it in a magnetic field in a low-oxygen atmosphere to form a ring-shaped green body, removing the solvent from the green body, and sintering the green body in vacuum. This method can stably produce high-performance, sintered R-Fe-B permanent magnets having a small total amount of rare earth elements and a small oxygen content. However, because the slurry is injected under pressure into the die cavity, to which the oriented magnetic field is applied, the fine R-Fe-B powder having large spontaneous magnetization oriented is subjected to large constraint by interaction with the oriented magnetic field, resulting in a nonuniform filling density in the die cavity. As a result, the resultant green body has a nonuniform density, causing deformation and cracking in the resultant sintered body. Also, because the slurry is injected into the die cavity under pressure toward a core center through an injection aperture open in the die cavity, the slurry impinging the core is divided to flows in two directions, which are converged on the opposite side of the injection aperture by 180°, so that the resultant sintered body has cracks generated from this converging position.\n\n[0004]JP 11-214216 A proposes a method for producing a sintered R-Fe-B permanent magnet comprising the steps of ejecting a slurry of a powder of an R-Fe-B permanent magnet, and a solvent such as a mineral oil, a synthetic oil or a vegetable oil through a slurry-supplying pipe inserted into a die cavity, to which a magnetic field is applied, molding the slurry filled in the cavity under pressure while gradually withdrawing the slurry-supplying pipe from the cavity, removing the solvent from the resultant ring-shaped green body, and sintering the green body. Because the slurry is injected into the die cavity through the slurry-supplying pipe inserted deep into the die cavity in this method, the die cavity is filled with the slurry at a good filling ratio even in the case of molding a relatively long ring-shaped green body. However, because the slurry-supplying pipe is inserted deep into the die cavity and withdrawn while ejecting the slurry, this method is disadvantageous in a long supplying time of the slurry. In addition, the slurry-supplying pipe leaves a void in the resultant green body at a position thereof, and this void acts as a starting position of cracking in the resultant sintered R-Fe-B permanent magnet.\n\n[0005]Proposed as another method for producing a radially anisotropic ring-shaped R-Fe-B permanent magnet is a method comprising the steps of pulverizing quenched ribbons of an R-Fe-B magnet alloy, molding the resultant powder at room temperature, hot-pressing the resultant green body in an inert gas atmosphere for densification, hot-plastic-working the resultant hot-pressed body to form a cup body provided with radial magnetic anisotropy, and cutting a bottom portion off to provide a ring-shaped product (JP 9-275004 A, JP 2001-181802 A). However, because the hot plastic working of the hot-pressed body in an inert gas atmosphere is carried out at a relatively low temperature of about 700-800°C so that crystal grains do not grow too much, it should be conducted at an extremely low speed to prevent cracking. Though different depending on the size of a magnet, one hot plastic working operation usually takes 10-30 minutes, low productivity as an industrial method for producing permanent magnets. In addition, because pressed bodies thus produced are likely to have cracks in their end portions, cracked portions should be cut off. For these reasons, this production method suffers from a high production cost. Further, the resultant ring magnet has large variations of magnetic properties. Though the degree of radial anisotropy depends on how much deformed in the hot plastic working, particularly small-diameter products and long products having large hot plastic working resistance suffer from large variations of a surface magnetic flux density.\n\n[0006]DE 100 32 515 A1 provides a thin arc segment magnet made of a rare earth sintered magnet substantially comprising 28-33 weight % of R and 0.8-1.5 weight % of B, the balance being substantially Fe, wherein R is at least one rare earth element including Y, and T is Fe or Fe and Co, which has an oxygen content of 0.3 weight % or less, a density of 7.56 g/cm 3[0007]Accordingly, an object of the present invention is to provide a sintered R-Fe-B permanent magnet having an improved coercivity iHc due to a desired amount of P, particularly a radially anisotropic sintered R-Fe-B permanent magnet free from deformation and cracking and having excellent magnetic orientation, and a production method thereof.\n\n[0008]Another object of the present invention is to provide a method for producing a radially anisotropic sintered R-Fe-B permanent magnet having high magnetic properties with little variation of a surface magnetic flux density at a high productivity.\n\n[0009]The object is met by the magnet and its production method as defined in the appended claims.\n\nDISCLOSURE OF THE INVENTION\n\n[0010]The sintered permanent magnet according to an embodiment of the present invention has a composition comprising, by mass, 27-33.5% of R, which is at least one of rare earth elements including Y, 0.5-2% of B, 0.002-0.15% of N, 0.25% or less of O, 0.15% or less of C, and 0.001-0.05% of P, the balance being Fe, wherein it has a coercivity iHc of 1 MA/m or more. The term \"sintered permanent magnet\" used herein includes both of sintered bodies made of permanent magnet materials before magnetization and those after magnetization. The coercivity is measured at room temperature (25°C).\n\n[0011]The sintered permanent magnet of the present invention may be a small ring magnet having an outer diameter of 10-30 mm, an inner diameter 8-28 mm and a height of 10-50 mm, particularly an outer diameter of 10-25 mm, an inner diameter 8-23 mm and a height of 10-40 mm. The sintered permanent magnet of the present invention is preferably a radially anisotropic sintered R-Fe-B permanent magnet. The sintered permanent magnet of the present invention preferably has a density of 7.52-7.85 g/cm 3[0012]A distribution of a surface magnetic flux density B 0  along the axial magnetic pole in the above ring magnet is preferably in a range of 92.5% or more of the maximum of B 0 . Namely, the variation of a surface magnetic flux density B 0  in the axial direction of the ring magnet is preferably 7.5% or less of the maximum of B 0 . Here, the variation of a surface magnetic flux density B 0  is represented by the formula of [(maximum of B 0  - minimum of B 0 ) / maximum of B 0 ] x 100 (%). The maximum and minimum of B 0  are measured in a range of a height H of the ring magnet. The distribution of a surface magnetic flux density B 0  is measured by placing a probe of a Gauss meter opposite to an outer circumferential surface of the ring magnet perpendicularly, and moving it on the outer circumferential surface in the axial direction of the ring magnet (length direction). The variation of a surface magnetic flux density B 0  is more preferably within 5%, particularly within 3%.\n\n[0013]In the embodiment of the present invention, R is 27-32% by mass. In an illustrative example useful to understand the present invention, R is more than 32% and 33.5% or less by mass. In the latter case, the sintered permanent magnet has a composition comprising, by mass, more than 32% and 33.5% or less of R, which is at least one of rare earth elements including Y, 0.5-2% of B, more than 0.25% and 0.6% or less of O, 0.01-0.15% of C, 0.002-0.05% of N, and 0.001-0.05% of P, the balance being Fe, wherein it is in the shape of a ring having an outer diameter of 10-100 mm, an inner diameter of 8-96 mm, and a height of 10-70 mm, wherein it has magnetic anisotropy in a radical direction of the ring, and wherein a distribution of a surface magnetic flux density B 0  on magnetic pole in the axial direction of the ring is in a range of 92.5% or more of the maximum of B 0 . In this case, too, the variation of a surface magnetic flux density B 0  is preferably within 7.5%, more preferably within 5%, particularly within 3%. This sintered permanent magnet preferably has a density of 7.42-7.75 g/cm 3[0014]Sodium hypophosphite is added preferably in the form of a solution in glycerin or ethanol, though it is possible to dissolve sodium hypophosphite in a non-aqueous solvent instead of forming a solution in glycerin or ethanol. However, from the aspect of easiness in handling a solvent, glycerin or ethanol is desirable as a solvent.\n\nBRIEF DESCRIPTION OF THE DRAWINGS\n\n[0015] Fig. 1 is a graph showing the relation between the coercivity iHc and the content of P of the sintered permanent magnet; Fig. 2 is a schematic view showing a molding apparatus for conducing the method of the present invention; Fig. 3 (a) is a schematic perspective view showing a test piece cut out from a ring-shaped sintered body; Fig. 3 (b) is a horizontal cross-sectional view showing a test piece that is to be cut out from a ring-shaped sintered body; Fig. 4 is a graph showing the line analysis results of EPMA in the sintered body of Example 3; Fig. 5 is a graph showing the line analysis results of EPMA in the sintered body of Example 4; Fig. 6 is a graph showing the line analysis results of EPMA in the sintered body of Comparative Example 4; Fig. 7 is a graph showing the surface magnetic flux density distribution of the ring magnet of Example 9; Fig. 8 is a graph showing the line analysis results of EPMA in the sintered body of Example 9; Fig. 9 is a graph showing the line analysis results of EPMA in the sintered body of Example 10; Fig. 10 is a graph showing the line analysis results of EPMA in the sintered body of Comparative Example 9; Fig. 11 is a graph showing the surface magnetic flux density distribution of the ring magnet of Comparative Example 11; and Fig. 12 is a graph showing the surface magnetic flux density distribution of the ring magnet of Comparative Example 13. \n\nDETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS\n\n[1] Composition\n\n[0016]The sintered permanent magnet of the present invention generally has a composition comprising, by mass, 27-33.5% of R, which is at least one of rare earth elements including Y, 0.5-2% of B, 0.002-0.15% of N, 0.25% or less of O, 0.15% or less of C, and 0.001-0.05% of P, the balance being Fe. The content of each element can be measured by an X-ray fluorescence analysis, etc.\n\n(A) Main elements\n\n(1) Rare earth element R\n\n[0017]The content of the rare earth element R is generally 27-33.5% by mass. The content of the rare earth element exceeding 33.5% by mass results in decrease in a saturation magnetic flux density and the deterioration of a corrosion resistance. On the other hand, when the content of the rare earth element is less than 27% by mass, the amount of a liquid phase necessary for the densification of the sintered body is insufficient, resulting in providing the sintered body with low density and coercivity iHc. R is 27-32% by mass in the first preferred composition of the present invention, and R is more than 32% and 33.5% or less by mass in the second preferred composition.\n\n[0018]When the content of O is more than 0.25% and 0.6% or less by mass, the amount of the rare earth element R is preferably more than 32% and 33.5% or less by mass. When the amount of the rare earth element exceeds 33.5% by mass, the amount of a rare earth-rich phase in the sintered body increases, accompanied by increase in its size, thus resulting in the deterioration of a corrosion resistance. On the other hand, when the amount of the rare earth element is 32% or less by mass, the amount of a liquid phase necessary for the densification of the sintered body is insufficient, thereby providing the sintered body with decreased density, as well as a decreased residual magnetic flux density Br and decreased coercivity iHc among magnetic properties. In the case of a sintered permanent magnet needing a high corrosion resistance, R is preferably limited to 32% or less by mass.\n\n(2) Boron B\n\n[0019]The content of B is generally 0.5-2% by mass. When the content of B is less than 0.5% by mass, B necessary for the formation of an R 2 Fe 14 B phase, a main phase, is insufficient, and an R 2 Fe 17  phase having soft magnetic properties is formed, resulting in decrease in coercivity iHc. On the other hand, when the content of B exceeds 2% by mass, a B-rich phase, non-magnetic phase, increases, resulting in decrease in a residual magnetic flux density Br.\n\n(3) Nitrogen N\n\n[0020]The content of N is generally 0.002-0.15% by mass. N exists mainly in an R-rich phase in the sintered body, bonding to part of the rare earth element to form nitrides. It is presumed that the formation of nitrides suppresses the anodic oxidation of a grain boundary phase, improving the corrosion resistance of the sintered body. However, when the content of N exceeds 0.15% by mass, the formation of nitrides decreases the amount of rare earth elements necessary for having the coercivity iHc, resulting in decrease in the coercivity iHc. On the other hand, when the content of N is less than 0.002% by mass, the sintered body has a low corrosion resistance. Incidentally, because fine pulverization in an Ar gas atmosphere does not cause nitriding, the content of N is 0.002-0.05% by mass in the sintered body.\n\n[0021]In the course of the coarse pulverization of an ingot produced by melting, trace amounts of nitrides are formed by nitrogen in the air. When this coarse powder is finely pulverized by a jet mill in a nitrogen gas or a nitrogen-containing Ar gas, which contains substantially no oxygen, further nitriding takes place. Here, \"containing substantially no oxygen\" means that the oxygen content is 0.001% or less by mass, more preferably 0.0005% or less by mass, further preferably 0.0002% or less by mass. Accordingly, the amount of coarse powder supplied to the jet mill per a unit time, and a ratio of an Ar gas to a nitrogen gas are adjusted in the fine pulverization, such that the content of N in the resultant sintered body does not exceed 0.15% by mass.\n\n(4) Oxygen O\n\n[0022]The content of O is 0.25% or less by mass in the first preferred composition of the present invention, while it is more than 0.25% and 0.6% or less by mass in the second composition according to the illustrative example useful to understand the present invention. When the content of O exceeds 0.6% by mass, part of the rare earth elements form oxides, resulting in too small amounts of the magnetically effective rare earth elements, and thus decrease in a coercivity iHc. Because R is 27-32% by mass in the first composition, the upper limit of the content of O is 0.25% by mass. On the other hand, because R is more than 32% and 33.5% or less by mass in the second composition, the upper limit of the content of O can be 0.6% by mass. With respect to the lower limit of the content of O in the first composition, it is preferably 0.05% by mass, though not restrictive. Particularly in the first composition, high corrosion resistance can be obtained by limiting the oxygen content and controlling the nitrogen content.\n\n(5) Carbon C\n\n[0023]The content of C is generally 0.15% or less by mass. When the content of C is more than 0.15% by mass, part of the rare earth elements form carbides, resulting in decrease in the amount of magnetically effective rare earth elements and thus decrease in a coercivity iHc. The content of C is preferably 0.12% or less by mass, more preferably 0.1% or less by mass. With respect to the lower limit of the content of C, it is preferably 0.01% by mass, though not restrictive.\n\n(6) Phosphorus P\n\n[0024]It has been found that the addition of a trace amount of P is effective to improve the coercivity iHc of the R-Fe-B permanent magnet. Fig. 1 shows the change of a coercivity iHc of a sintered body having a composition by mass of 15.7% of Nd, 7.1 % of Pr, 7.5% of Dy, 1.1% of B, 2.0% of Co, 0.09% of Cu, 0.08% of Ga, and x % of P, the balance being Fe, relative to the content x of P in the sintered body. Though the improvement of the coercivity iHc is observed when the content of P reaches 0.0005% by mass, it is remarkable at the content of P of 0.001% or more by mass. At 0.001 % or more by mass, the larger the content of P, the higher the coercivity iHc. However, when the content of P exceeds 0.05% by mass, the strength of the sintered body is lowered. Accordingly, the content of Pin the sintered body is 0.001-0.05% by mass. In this range, no decrease in saturation magnetization is appreciated.\n\n[0025]Though it is not necessarily clear why the coercivity iHc is improved by P, it is presumed that P exists in pinning sites for fixing magnetic domain walls in interfaces between a grain boundary phase and a main phase of crystal grains in the sintered body, thereby changing the composition or morphology of the pinning sites, which leads to increase in the fixing force of the magnetic domain walls.\n\n[0026]The lower limit of the content of P is preferably 0.003% by mass, more preferably 0.008% by mass. The upper limit of the content of P is preferably 0.04% by mass, more preferably 0.02% by mass.\n\n[0027]Though not particularly restrictive, methods for controlling the content of P may be (1) a method of mixing Fe alloys, starting material metals for an ingot for an R-Fe-B permanent magnet, with P-containing Fe-base alloys having known P contents, such as Fe-P alloys or Fe-B-P alloys, etc. in predetermined amounts to control the content of P in the ingot; (2) a method of coarsely pulverizing an ingot produced by vacuum melting for an R-Fe-B permanent magnet, mixing the resultant coarse powder of 20-500 µm with a predetermined amount of sodium hypophosphite (NaPH 2 O 2 ) in the form of a solution such as an aqueous solution, and drying the powder, thereby controlling the content of P in the coarse powder for the R-Fe-B permanent magnet; and (3) a method of adding sodium hypophosphite as a fluidity-improving agent in the form of a solution in glycerin or ethanol to a mineral oil, a synthetic oil or their mixture for forming the slurry mentioned above, such that the percentage of sodium hypophosphite is 0.01 % or more by mass, and wet-molding the slurry. When a green body is efficiently produced by a wet-molding method, while preventing the oxidation of the fine powder, the method (3) is most preferable.\n\n[0028]In the method (3), the addition of such a sodium hypophosphite solution as to make the content of P less than 0.001% by mass provides only an insufficient effect of improving the fluidity of the slurry. It is preferable to control the amount of a solution of sodium hypophosphite in glycerin or ethanol, such that the ratio of sodium hypophosphite to a mineral oil, a synthetic oil or their mixture does not exceed 0.5% by mass.\n\n(B) Optional elements\n\n[0029]In the sintered permanent magnet of the present invention, part of Fe may be replaced by at least one selected from the group consisting of Co, Nb, Al, Ga and Cu. The amount of each substituting element is expressed by percentage by mass per the overall sintered permanent magnet.\n\n(1) Cobalt Co\n\n[0030]The amount of Co is generally 0-5% or less by mass. Co functions to elevate the Curie temperature of the sintered magnet, namely, to improve the temperature coefficient of saturation magnetization. However, when the amount of Co exceeds 5% by mass, the sintered magnet has drastically decreased residual magnetic flux density Br and coercivity iHc. The amount of Co added is preferably 0.3-5% by mass, particularly 0.3-4.5% by mass. When the amount of Co is less than 0.3% by mass, there is only a small effect of improving the temperature coefficient.\n\n(2) Niobium Nb\n\n[0031]The amount of Nb is generally 0-1% by mass. A Nb boride formed in the sintering process suppresses the abnormal growth of crystal grains. However, when the amount of Nb exceeds 1% by mass, a large amount of the Nb boride is formed, resulting in decrease in a residual magnetic flux density Br. When the amount of Nb is less than 0.05% by mass, there is only an insufficient effect of suppressing the abnormal growth of crystal grains. Accordingly, the preferred amount of Nb replacing Fe is 0.05-1% by mass.\n\n(3) Aluminum Al\n\n[0032]The amount of Al is generally 0.01-1 % by mass. Al has an effect of increasing a coercivity iHc. When the amount of Al is less than 0.01% by mass, there is only an insufficient effect of improving the coercivity iHc. On the other hand, when the amount of Al exceeds 1% by mass, the residual magnetic flux density Br decreases drastically. The upper limit of the Al content is preferably 0.3% by mass.\n\n(4) Gallium Ga\n\n[0033]The amount of Ga is generally 0.01-0.5% by mass. Though a trace amount of Ga has an effect of improving a coercivity iHc, such effect would be insufficient if the amount of Ga were less than 0.01 % by mass. On the other hand, when the amount of Ga exceeds 0.5% by mass, the decrease of the residual magnetic flux density Br becomes remarkable, and the coercivity iHc also decreases. The amount of Ga is preferably 0.03-0.4% by mass, more preferably 0.03-0.2% by mass.\n\n(5) Copper Cu\n\n[0034]The amount of Cu is generally 0-1% by mass. Though a trace amount of Cu has an effect of providing the sintered magnet with an improved coercivity iHc, such effect would be saturated if the amount of Cu added exceeded 1% by mass. When the amount of Cu added is less than 0.01 % by mass, there is only an insufficient effect of improving the coercivity iHc. Thus, the amount of Cu is preferably 0.01-1% by mass, more preferably 0.01-0.3% by mass.\n\n[0035]The sintered permanent magnet according to the first embodiment of the present invention has a composition comprising, by mass, 27-32% of R, 0.5-2% of B, 0.002-0.15% of N, 0.05-0.25% of O, 0.01-0.15% of C, and 0.001-0.05% of P, the balance being Fe.\n\n[0036]The sintered permanent magnet according to the illustrative example useful to understand the present invention has a composition comprising, by mass, more than 32% and 33.5% or less of R, 0.5-2% of B, 0.002-0.05% of N, more than 0.25% and 0.6% or less of O, 0.01-0.15% of C, and 0.001-0.05% of P, the balance being Fe. The sintered body having this composition can be produced from a slurry obtained by mixing dry fine powder pulverized in an atmosphere having an oxygen content of 0.005-0.5% with a mineral oil, a synthetic oil or their mixture.\n\n[0037]In the sintered permanent magnets in any embodiments, part of Fe may be replaced by at least one selected from the group consisting of 0.3-5% of Co, 0.05-1% of Nb, 0.01-1% of Al, 0.01-0.5% of Ga, and 0.01-1 % of Cu, by mass.\n\n[2] Production method\n\n(A) Fine pulverization\n\n[0038]Coarse powder having the above composition for an R-Fe-B permanent magnet is finely pulverized by a jet mill to fine powder having an average diameter of 3-6 µm, (a) in an atmosphere composed of a nitrogen gas and/or an Ar gas, whose oxygen content is substantially 0%, or (b) in an atmosphere composed of a nitrogen gas and/or an Ar gas, whose oxygen content is 0.005-0.5%. To control the amount of N in the sintered body, a trace amount of a nitrogen gas is preferably introduced into a jet mill whose atmosphere is an Ar gas, such that the concentration of a nitrogen gas in the Ar gas is adjusted.\n\n[0039]When the jet mill is filled with a nitrogen gas atmosphere, it is preferable to control the amount of N mixed into magnet powder by adjusting the amount of coarse powder charged at the time of pulverization, thereby controlling the amount of N in the resultant sintered body. Incidentally, the phrase that \"the oxygen concentration is substantially 0%\" means that the present invention is not restricted to a case where the oxygen concentration is completely 0%, but includes a case where the fine powder may contain oxygen in such an amount that the fine powder surface is extremely slightly covered with an oxide layer. Such low oxygen concentration is, for instance, 0.001 % or less, preferably 0.0005% or less, more preferably 0.0002% or less.\n\n[0040]When the coarse powder containing 0.002-0.15% by mass of N is finely pulverized in an atmosphere having an oxygen content of 0.005-0.5%, the oxidation reaction of the rare earth elements predominantly occurs in the coarse powder, so that a nitriding reaction is almost negligible.\n\n(B) Formation of slurry\n\n[0041]A vessel containing a mineral oil, a synthetic oil or their mixture is disposed at a fine powder-recovering outlet of the jet mill, and this vessel is filled with an atmosphere composed of a nitrogen gas and/or an Ar gas. Thus, the fine powder is recovered directly in a mineral oil, a synthetic oil or their mixture without contact with the air, to form a slurry.\n\n[0042]The mineral oil, the synthetic oil or their mixture is preferably mixed with sodium hypophosphite as a fluidity-improving agent. The sodium hypophosphite is preferably added in the form of a solution in glycerin or ethanol to a mineral oil, a synthetic oil or their mixture. Though not particularly restrictive, the concentration of sodium hypophosphite in a solution in glycerin or ethanol is preferably such that the ratio of sodium hypophosphite to a mineral oil, a synthetic oil or their mixture is within a range of 0.01-0.5% by mass. When the ratio of sodium hypophosphite is less than 0.01% by mass, there is only an insufficient effect of improving the fluidity of the slurry. When a mineral oil, a synthetic oil or their mixture is mixed with a solution of sodium hypophosphite in glycerin or ethanol, the mineral oil, the synthetic oil or their mixture becomes acidic, whereby the fine powder recovered in these solvents chemically reacts with sodium hypophosphite.\n\n[0043]As a result, the radially anisotropic sintered R-Fe-B permanent magnet obtained from such slurry has an increased content of P. In the radially anisotropic sintered R-Fe-B permanent magnet, P exists mainly in a non-magnetic grain boundary phase rich in rare earth elements. The inventors\' research has revealed that the ratio of sodium hypophosphite to a mineral oil, a synthetic oil or their mixture is preferably 0.01-0.5% by mass, such that the content of P in the sintered body is 0.001-0.05% by mass. The addition of a solution of sodium hypophosphite in glycerin or ethanol may be carried out before or after recovering the fine powder in a mineral oil, a synthetic oil or their mixture.\n\n[0044]In any case, when the fine powder is mixed with a mineral oil, a synthetic oil or their mixture to form a slurry, the fine powder is prevented from oxidation and nitriding by the effect of a mineral oil, a synthetic oil or their mixture shielding the fine powder from the air. Accordingly, the contents of O and N in the resultant sintered body do not substantially differ from those in the fine powder.\n\n(C) Formation of slurry\n\n[0045]Fig. 2 shows an example of molding apparatuses used in the method of the present invention. A region indicated by the reference number 11 shows a vertical cross section of the molding apparatus, and a region indicated by the reference number 12 is a horizontal cross-sectional view showing a die in the molding apparatus, and its enlarged view (square region). The die comprises a solid cylindrical core 4, a hollow cylindrical die member 3, a lower punch 9, and an upper punch 10, a space enclosed by them being a cavity 6. The hollow cylindrical die member 3 is supported by a die case 2. A pair of magnetic field-generating coils 1 are disposed around the core 4 at its upper and lower positions, to apply magnetic fluxes 7 into the cavity 6 through the core 4. The die case 2 has a slurry-injecting aperture 5 open in the cavity 6.\n\n[0046]The axial direction of the slurry-injecting aperture 5 open in the die cavity, into which the slurry is injected under pressure, is preferably deviated from the center O of the center core 4 in the die. With the slurry-injecting aperture 4 having an axial direction deviated from the core center O, the fine powder slurry injected under pressure smoothly and substantially spirally fills up the ring-shaped cavity 6 along the outer circumferential surface of the core 4 or along the inner surface of the die without impinging the die core 4, resulting in a high filling density.\n\n[0047]On the other hand, when the axial of the slurry-injecting aperture 5 passes through the center O of the die core, the slurry injected under pressure perpendicularly impinges the die core 4, is divided to right and left flows and converged while impinging at a position opposite to the slurry-injecting aperture 5 by 180°. This generates so-called junctions, resulting cracking in the resultant sintered body.\n\n[0048]In the present invention, as shown in Fig. 2, an angle θ (right or acute angle) between the center axis of the slurry-injecting aperture 5 and a radius of the die core 4 (straight line connecting a point A, at which the center axis of the slurry-injecting aperture 5 intersects the core 4, and the core center O) is 5° to 90°, preferably 10° to 90°, particularly 30° to 90°, though it may be slightly different depending on the size of the die cavity 6.\n\n[0049]Though not particularly restrictive, the injection pressure of the slurry into the die cavity 6 is preferably 4.9 x 10 4[0050]The intensity of a radially oriented magnetic field applied into the die cavity 6 to orient the fine powder in the slurry is preferably 159 kA/m (about 2 kOe) or more, more preferably 239 kA/m (about 3 kOe) or more. After injecting the slurry under pressure, wet molding is carried out under pressure while maintaining the oriented magnetic field. When the intensity of the oriented magnetic field is less than 159 kA/m (about 2 kOe), the orientation of the fine powder is insufficient, failing to achieve good magnetic properties. During or after injecting the slurry into the die cavity 6 while applying a first oriented magnetic field of 159 kA/m (about 2 kOe) or more, the slurry may be wet-molded under pressure by applying a higher second oriented magnetic field than the first oriented magnetic field. The wet molding of the slurry with improved fluidity under the above conditions can provide a green body having as high a density as 4.0-4.8 g/cm 3[0051]The resultant green body is heated under a reduced pressure to remove a mineral oil, a synthetic oil or their mixture from the green body. The reduced-pressure heat treatment conditions of the green body are a vacuum degree of 13.3 Pa (about 0.1 Torr) or less, for instance, 6.7 Pa (about 5.0 x 10 -2[0052]The sintering of the green body is carried out at a vacuum degree of 0.13 Pa (about 0.001 Torr) or less, preferably 6.7 x 10 -2[0053]As describe', '发明领域 \n\n [0001] 本发明涉及一种由于期望的P量而具有改善的矫顽力iHc的R-Fe-B烧结永磁体及其制造方法,特别是涉及一种在径向上具有优异的高性能,径向各向异性的R-Fe-B烧结永磁体。 表面磁通密度的均匀性及其有效的生产方法。 \n\n 发明背景 \n\n [0002] R-Fe-B永磁体已经通过所谓的干式模制方法生产了许多年,其中在施加磁场的同时在模具中模制干细粉。 在干法成型法中,通常通过在粗制原料粉末的细粉碎中将微量的氧气引入喷射式粉碎机中,将氮气或氩气(粉碎介质)中的氧气浓度控制在期望的范围内。 喷射磨。 这将导致细粉表面的氧化。 与空气接触时,如果不经过这种氧化处理,就会燃烧细粉。 进行了氧化处理的细粉的氧含量为5000〜6000ppm,由该细粉得到的烧结体的氧含量为4000〜5000ppm。 烧结体中的大部分氧气与作为元素存在于氧化物中的Nd等稀土元素结合。 为了补充稀土元素的氧化部分,应该增加烧结体中稀土元素的总量,从而导致烧结磁体的饱和磁通密度降低。 \n\n [0003] 为了解决干法成型方法的问题,JP 7-57914A提出了一种用于制造烧结稀土磁体的方法,该方法包括以下步骤:将稀土磁体粉末与矿物油或合成油的混合物在压力下注入模具中。 施加定向磁场的模腔,在低氧气氛中在磁场中将其湿模制成环状生坯,从生坯中除去溶剂,然后在真空中烧结生坯。 该方法可以稳定地生产稀土元素总量少且氧含量少的高性能烧结R-Fe-B永磁体。 然而,由于将浆料在压力下注入到施加有定向磁场的模腔中,因此具有大的自发磁化取向的R-Fe-B细粉通过与定向磁场的相互作用而受到很大的约束,结果 模腔中的填充密度不均匀。 结果,所得生坯的密度不均匀,从而导致所得烧结体变形和破裂。 另外,由于浆料通过在模腔中敞开的注射孔而在朝向芯部的压力下被压入模腔,因此撞击芯部的浆料在两个方向上分开流动,并会聚在注入的相反侧。 孔径180°,使得所得的烧结体具有从该会聚位置产生的裂纹。 \n\n [0004] JP 11-214216 A提出了一种制造R-Fe-B烧结永磁体的方法,该方法包括以下步骤:喷射R-Fe-B永磁体粉末和诸如矿物油的溶剂的浆液,合成的。 油或植物油通过插入模腔的浆料供给管施加磁场,在压力下模制填充在模腔中的浆料,同时逐渐从模腔中抽出浆料供给管,从中除去溶剂 得到的环状生坯,并烧结该生坯。 因为在该方法中,通过将浆液通过深深地插入到型腔中的供料管注入到型腔中,所以即使在模制相对长的环形时,也以良好的填充率将型浆填充到型腔中。 绿色的身体。 但是,由于将浆料供给管深深地插入到型腔中并在排出浆料的同时将其抽出,因此该方法在浆料的供给时间长的方面是不利的。 另外,浆料供给管在所得生坯中的位置处留有空隙,该空隙用作所得烧结R-Fe-B永磁体中裂纹的开始位置。 \n\n [0005] 作为用于制造径向各向异性的环状R-Fe-B永磁体的另一种方法,提出了一种方法,该方法包括以下步骤:将R-Fe-B磁体合金的淬火薄带粉碎,在室温下成型所得粉末,热压。 将所得生坯在惰性气体气氛中进行致密化,对所得的热压体进行热塑加工以形成具有径向磁各向异性的杯状体,并切下底部以提供环形产品(JP 9  -275004 A,JP 2001-181802 A)。 然而,由于热压体在惰性气体气氛中的热塑性加工是在大约700-800℃的相对较低的温度下进行的,以使得晶粒不会生长太多,因此应在极高的温度下进行。 低速防止开裂。 尽管根据磁体的尺寸而有所不同,但是一种热塑加工操作通常需要10至30分钟,这是生产永磁体的工业方法的生产率较低。 另外,由于这样制得的压制体在其端部可能有裂纹,因此应将裂纹部分切除。 由于这些原因,该生产方法遭受高生产成本的困扰。 此外,所得的环形磁体具有较大的磁性能变化。 尽管径向各向异性的程度取决于在热塑性加工中变形的程度,但是特别是具有大的热塑性加工阻力的小直径产品和长产品会遭受表面磁通密度的大变化。 \n\n [0006] DE 100 32 515 A1提供了一种由稀土烧结磁体制成的薄弧段磁体,该磁体基本上包含28-33重量%的R和0.8-1.5重量%的B,其余部分基本上是Fe,其中R是至少一种稀土 包含Y且T为Fe或Fe和Co的元素,其氧含量为0.3重量%以下,密度为7.56g / cm 3。 或更高,在室温下矫顽力iHc为1.1 MA / m(14 kOe)或更高,在室温下在各向异性提供方向上的取向Br /4πImax为96%或更高。 通过使用将上述组成的细合金粉末引入包含99.7-99.99重量份的矿物油,合成油或植物油和0.01-0.3重量份的矿物油的混合液中而形成的浆料混合物来制造磁体。 非离子表面活性剂和/或阴离子表面活性剂。 但是,该文献的磁体不包含P,而是由向磁体形成模具的中心芯注入的浆料制成,并且不包含次磷酸钠作为流动性改善剂。 \n\n 发明目的 \n\n [0007] 因此,本发明的目的是提供一种由于期望的P量而具有改善的矫顽力iHc的R-Fe-B烧结永磁体,特别是径向各向异性的R-Fe-B烧结永磁体,其不变形和不开裂。 并且具有优异的磁取向性及其制造方法。 \n\n [0008] 本发明的另一个目的是提供一种以高生产率生产具有高磁性能且表面磁通密度几乎没有变化的径向各向异性烧结R-Fe-B永磁体的方法。 \n\n [0009] 通过所附权利要求中限定的磁体及其制造方法来实现该目的。 \n\n 发明内容 \n\n [0010] 根据本发明的实施方式的烧结永磁体具有包含按质量计27-33.5%的R的组成,所述R是包括Y的稀土元素中的至少一种,0.5-2%的B,0.002-0.15%。 其中,N为N,O为0.25%以下,C为0.15%以下,P为0.001〜0.05%,余量为Fe,矫顽力iHc为1MA / m以上。 在此使用的术语“烧结永磁体”包括由永磁材料在磁化之前和在磁化之后制成的两个烧结体。 矫顽力在室温(25℃)下测量。 \n\n [0011] 本发明的烧结永久磁铁可以是外径为10〜30mm,内径为8〜28mm,高度为10〜50mm,特别是外径为10〜25mm的小环形磁铁。 内径8-23毫米,高度10-40毫米。 本发明的烧结永磁体优选是径向各向异性烧结的R-Fe-B永磁体。 本发明的烧结永磁体的密度优选为7.52〜7.85g / cm 3。 [0012] 在上述环形磁铁中,沿着轴向磁极的表面磁通密度B 0的分布优选为B 0的最大值的92.5%以上。 即,表面磁通密度B 0在环形磁铁的轴向上的变化优选为B 0的最大值的7.5%以下。 在此,表面磁通密度B 0的变化由[(B 0的最大值-B 0的最小值)/ B 0的最大值]×100(%)的式子表示。  B 0的最大值和最小值在环形磁体的高度H的范围内测量。 表面磁通密度B 0的分布是通过将高斯计的探头垂直于环形磁体的外周表面相对放置,并在环形磁体的轴向上沿外周表面移动(长度 方向)。 表面磁通密度B 0的变化更优选在5%以内,特别是在3%以内。 \n\n [0013] 在本发明的实施方式中,R为27〜32质量%。 在有助于理解本发明的示例性实施例中,R大于32质量%且33.5质量%以下。 在后一种情况下,烧结永磁体的组成按质量计包含大于32%且小于或等于33.5%的R,R是包括Y的稀土元素中的至少一种,B的0.5-2%,B的0.5-2%。  O为0.25%,0.6%以下,C为0.01〜0.15%,N为0.002〜0.05%,P为0.001〜0.05%,其余为Fe,呈外径的环状。 环的直径为10-100mm,内径为8-96mm,高度为10-70mm,其中它在环的自由基方向上具有磁各向异性,并且表面磁通密度B 0在 环的轴向上的磁极在B 0的最大值的92.5%以上的范围内。 在这种情况下,表面磁通密度B 0的变化也优选在7.5%以内,更优选在5%以内,特别是3%以内。 该烧结永磁体的密度优选为7.42〜7.75g / cm 3。 [0014] 次磷酸钠优选以在甘油或乙醇中的溶液形式加入,尽管可以将次磷酸钠溶解在非水溶剂中而不是在甘油或乙醇中形成溶液。 但是,从容易处理溶剂的方面出发,期望甘油或乙醇作为溶剂。 \n\n 附图的简要说明 \n\n [0015] 图。1  图2是表示矫顽力iHc与永久磁铁的P含量的关系的图。  图2  图2是表示用于实施本发明的方法的成型装置的示意图。  图3(a)  图3是表示从环状烧结体切出的试验片的概略立体图。  图3(b)  图3是表示从环状烧结体切出的试验片的水平剖视图。  图4  图3是表示实施例3的烧结体中的EPMA的线分析结果的图。  图5  图4是表示实施例4的烧结体中的EPMA的线分析结果的图。  图6  图4是表示比较例4的烧结体中的EPMA的线分析结果的图。  图7  图9是表示实施例9的环形磁铁的表面磁通密度分布的图。  图8  图9是表示实施例9的烧结体中的EPMA的线分析结果的图。  图9  图7是表示实施例10的烧结体中的EPMA的线分析结果的图。  图10  图9是表示比较例9的烧结体中的EPMA的线分析结果的图。  图11  图7是表示比较例11的环形磁铁的表面磁通密度分布的图。 和  图12 图13是示出比较例13的环形磁体的表面磁通密度分布的图。 \n\n 具体实施方式 \n\n [1]组成 \n\n [0016] 本发明的烧结永磁体通常具有以下组成:按质量计包含27-33.5%的R,R是包括Y的稀土元素中的至少一种,0.5-2%的B,0.002-0.15%的N,  O为0.25%以下,C为0.15%以下,P为0.001〜0.05%,其余为Fe。 每种元素的含量可以通过X射线荧光分析等测量​​。 \n\n (一)主要内容 \n\n (1)稀土元素R \n\n [0017] 稀土元素R的含量通常为27〜33.5质量%。 稀土元素的含量超过33.5质量%时,饱和磁通密度降低,耐腐蚀性降低。 另一方面,当稀土元素的含量小于27质量%时,致密化烧结体所需的液相的量不足,导致烧结体的密度和矫顽力降低至iHc。  。 在本发明的第一优选组合物中,R为27-32质量%,并且在第二优选组合物中,R大于32质量%且为33.5质量%以下。 \n\n [0018] 当O的含量大于0.25质量%且小于等于0.6质量%时,稀土元素R的含量优选大于32质量%且小于等于33.5质量%。 稀土元素的含量超过33.5质量%时,烧结体中的富稀土相的量增加,尺寸增大,耐腐蚀性降低。 另一方面,当稀土元素的含量为32质量%以下时,致密化烧结体所需的液相的量不足,从而使烧结体密度降低,并且 磁性能之间的剩余磁通密度Br降低和矫顽力iHc降低。 在需要高耐腐蚀性的烧结永磁体的情况下,R优选限制为32质量%以下。 \n\n (2)硼B \n\n [0019] B的含量通常为0.5〜2质量%。 当B的含量小于0.5质量%时,形成主相的R 2 Fe 14 B相所需的B不足,形成具有软磁性的R 2 Fe 17相。 矫顽力降低。 另一方面,当B的含量超过2质量%时,富B相,非磁性相增加,导致残留磁通密度Br降低。 \n\n (3)氮 \n\n [0020] N的含量通常为0.002〜0.15质量%。  N主要存在于烧结体中的富R相中,与一部分稀土元素结合形成氮化物。 据推测,氮化物的形成抑制了晶界相的阳极氧化,从而提高了烧结体的耐腐蚀性。 然而,当N的含量超过0.15质量%时,氮化物的形成减少了具有矫顽力iHc所需的稀土元素的量,导致矫顽力iHc降低。 另一方面,当N的含量小于0.002质量%时,烧结体的耐腐蚀性低。 顺便提及,因为在Ar气气氛中的细粉碎不会引起氮化,所以在烧结体中N的含量为0.002-0.05质量%。 \n\n [0021] 在通过熔化产生的铸锭粗粉碎的过程中,空气中的氮形成痕量的氮化物。 当将该粗粉通过喷射磨在氮气或基本上不包含氧的含氮Ar气体中细粉碎时,发生进一步的氮化。 在此,“实质上不含有氧”是指氧含量为0.001质量%以下,更优选为0.0005质量%以下,进一步优选为0.0002质量%以下。 因此,在微粉碎中,每单位时间向喷射式粉碎机供给的粗粉量和Ar气与氮气的比例被调整,以使所得烧结体中的N含量不超过0.15。 质量%。 \n\n (4)氧气 \n\n [0022] 在本发明的第一种优选的组合物中,O的含量为0.25质量%以下,而根据说明性实例的第二种组合物中的O的含量在0.25质量%以上,0.6%以下,对于理解本发明有用。  。 当O的含量超过0.6质量%时,一部分稀土元素形成氧化物,导致磁有效稀土元素的量过少,矫顽力iHc降低。 在第一组合物中,由于R为27〜32质量%,因此O的含量的上限为0.25质量%。 另一方面,在第二组合物中,由于R大于32质量%且为33.5质量%以下,因此,O的含量的上限可以为0.6质量%。 关于第一组合物中的O含量的下限,尽管没有限制,但是优选为0.05质量%。 特别是在第一组合物中,可以通过限制氧含量并控制氮含量来获得高耐腐蚀性。 \n\n (5)碳C \n\n [0023] C的含量通常为0.15质量%以下。 当C的含量大于0.15质量%时,一部分稀土元素形成碳化物,导致磁有效稀土元素的量减少,从而矫顽力iHc降低。  C的含量优选为0.12质量%以下,更优选为0.1质量%以下。 关于C含量的下限,尽管没有限制,但优选为0.01质量%。 \n\n (6)磷P \n\n [0024] 已经发现,添加痕量的P有效地改善了R-Fe-B永磁体的矫顽力iHc。 图。1  表示组成为质量的Nd为15.7%,Pr为7.1%,Dy为7.5%,B为1.1%,Co为2.0%,Cu为0.09%,Cu为0.08%的烧结体的矫顽力iHc的变化。 相对于烧结体中P的含量x,Ga和P的x%,余量为Fe。 当P的含量达到0.0005质量%时,虽然矫顽力iHc有所提高,但在P的含量为0.001质量%以上时,显着。 在0.001质量%以上时,P的含量越大,矫顽力iHc越高。 但是,如果P的含量超过0.05质量%,则烧结体的强度降低。 因此,Pin烧结体的含量为0.001〜0.05质量%。 在该范围内,没有意识到饱和磁化强度的降低。 \n\n [0025] 尽管不一定清楚为什么通过P来提高矫顽力iHc,但是推测P存在于用于将磁畴壁固定在烧结体的晶界相和晶粒的主相之间的界面的钉扎部位中,从而改变了P。 钉扎位点的组成或形态,从而导致磁畴壁的固定力增加。 \n\n [0026] P含量的下限优选为0.003质量%,更优选为0.008质量%。  P的含量的上限优选为0.04质量%,更优选为0.02质量%。 \n\n [0027] 尽管没有特别限制,但是控制P含量的方法可以是(1)已知将Fe合金,用于R-Fe-B永磁体的铸锭的原材料金属与含P的Fe基合金混合的方法。 预定量的诸如Fe-P合金或Fe-BP合金等的P含量,以控制铸锭中的P含量;  (2)将R-Fe-B永磁体的真空熔融法制造的铸锭粗粉碎,将得到的20〜500μm的粗粉与规定量的次磷酸钠(NaPH 2 O 2)混合的方法。 溶液例如水溶液,干燥粉末,从而控制R-Fe-B永磁体的粗粉中P的含量;  (3)向矿物油,合成油或其混合物中添加甘油或乙醇溶液形式的次磷酸钠作为流动性改善剂的方法,以形成上述浆料,使钠的百分比 次磷酸盐为0.01质量%以上,并且将浆料湿成型。 当通过湿成型法有效地制造生坯时,在防止细粉的氧化的同时,最优选方法(3)。 \n\n [0028] 在方法(3)中,添加使P含量小于0.001质量%的次磷酸钠溶液仅不足以改善浆料的流动性。 优选控制次磷酸钠在甘油或乙醇中的溶液的量,以使次磷酸钠与矿物油,合成油或其混合物的比例不超过0.5质量%。 \n\n (B)可选要素 \n\n [0029] 在本发明的烧结永磁体中,Fe的一部分可以被选自Co,Nb,Al,Ga和Cu中的至少一种代替。 每种替代元素的量以相对于整个烧结永磁体的质量百分比表示。 \n\n (1)钴钴 \n\n [0030] Co的含量通常为0〜5质量%以下。  Co起到提高烧结磁体的居里温度的作用,即提高饱和磁化的温度系数。 然而,当Co的含量超过5质量%时,烧结磁体的剩余磁通密度Br和矫顽力iHc急剧降低。  Co的添加量优选为0.3〜5质量%,特别是0.3〜4.5质量%。 当Co的含量小于0.3质量%时,提高温度系数的效果很小。 \n\n (2)铌Nb \n\n [0031] Nb的量通常为0-1质量%。 在烧结过程中形成的Nb硼化物可抑制晶粒的异常生长。 然而,当Nb的含量超过1质量%时,形成大量的Nb硼化物,导致残留磁通密度Br降低。 当Nb的含量小于0.05质量%时,抑制晶粒的异常生长的效果不足。 因此,Nb置换Fe的优选量为0.05〜1质量%。 \n\n (3)铝铝 \n\n [0032] Al的含量通常为0.01〜1质量%。  Al具有提高矫顽力iHc的作用。 当Al的含量小于0.01质量%时,仅不足以改善矫顽力iHc。 另一方面,当Al的含量超过1质量%时,残留磁通密度Br急剧降低。  Al含量的上限优选为0.3质量%。 \n\n (4)镓镓 \n\n [0033] Ga的含量通常为0.01〜0.5质量%。 尽管痕量的Ga具有改善矫顽力iHc的作用,但是如果Ga的量小于0.01质量%,则这种作用将是不足的。 另一方面,如果Ga的含量超过0.5质量%,则剩余磁通密度Br的降低变得显着,矫顽力iHc也降低。  Ga的含量优选为0.03〜0.4质量%,更优选为0.03〜0.2质量%。 \n\n (5)铜铜 \n\n [0034] Cu的含量通常为0-1质量%。 微量的Cu具有使矫顽力iHc提高的效果,但如果Cu的添加量超过1质量%,则该效果饱和。 当Cu的添加量小于0.01质量%时,仅不足以改善矫顽力iHc。 因此,Cu的含量优选为0.01〜1质量%,更优选为0.01〜0.3质量%。 \n\n [0035] 根据本发明的第一实施方式的烧结永磁体具有以下组成:按质量计包括27-32%的R,0.5-2%的B,0.002-0.15%的N,0.05-0.25%的O,0.01。  C为-0.15%,P为0.001-0.05%,其余为Fe。 \n\n [0036] 根据说明性实例的用于理解本发明的烧结永磁体具有如下组成:按质量计包含大于32%且小于或等于33.5%的R,0.5-2%的B,0.002-0.05%的N,更多 O为0.25%以上且0.6%以下,C为0.01〜0.15%以下,P为0.001〜0.05%以下,其余为Fe。 具有该组成的烧结体可以通过将在氧气含量为0.005-0.5%的气氛中粉碎的干燥细粉与矿物油,合成油或它们的混合物混合而得到的浆料制成。 \n\n [0037] 在任何实施例的烧结永磁体中,部分Fe可以被选自由0.3-5%的Co,0.05-1%的Nb,0.01-1%的Al,0.01-0.5%组成的组中的至少一种代替。 按质量计为Ga的0.01%和Cu的0.01-1%。 \n\n [2]制作方法 \n\n (A)细粉碎 \n\n [0038] 将具有上述R-Fe-B永磁体组成的粗粉通过气流粉碎机细粉碎成平均直径为3-6μm的细粉。(a)在由氮气和/或氮气组成的气氛中 氧含量大致为0%的Ar气,或(b)在由氮气含量和/或氧含量为0.005-0.5%的Ar气组成的气氛中。 为了控制烧结体中的N量,优选将微量的氮气引入到气氛为Ar气的喷射磨机中,从而调节Ar气中的氮气浓度。 \n\n [0039] 当喷射磨充满氮气气氛时,优选通过调节粉碎时的粗粉加入量来控制混入磁铁粉中的N量,从而控制所得烧结体中的N量。  。 顺便提及,短语“氧浓度基本上为0%”是指本发明不限于氧浓度完全为0%的情况,而是包括细粉中氧的含量可以为使得 细粉表面极轻微地被氧化层覆盖。 这样的低氧浓度例如为0.001%以下,优选为0.0005%以下,更优选为0.0002%以下。 \n\n [0040] 当在0.005〜0.5%的氧含量的气氛中将含有0.002〜0.15质量%的N的粗粉细粉碎时,在粗粉中主要发生稀土元素的氧化反应,因此发生氮化反应。 几乎可以忽略不计。 \n\n (B)浆液的形成 \n\n [0041] 包含矿物油,合成油或它们的混合物的容器设置在喷射磨的细粉回收出口,并且该容器充满由氮气和/或氩气组成的气氛。 因此,细粉直接在矿物油,合成油或它们的混合物中直接回收而不与空气接触,形成浆液。 \n\n [0042] 矿物油,合成油或它们的混合物优选与次磷酸钠混合作为流动性改进剂。 次磷酸钠优选以在甘油或乙醇中的溶液形式添加至矿物油,合成油或其混合物中。 尽管没有特别限制,但是在甘油或乙醇中的溶液中次磷酸钠的浓度优选为使得次磷酸钠与矿物油,合成油或其混合物的比例在0.01-0.5质量%的范围内。 当次磷酸钠的比例小于0.01质量%时,改善浆料的流动性的效果不足。 当矿物油,合成油或其混合物与次磷酸钠在甘油或乙醇中的溶液混合时,矿物油,合成油或其混合物变为酸性,从而在这些溶剂中回收的细粉与次磷酸钠化学反应 。 \n\n [0043] 结果,由这种浆料获得的径向各向异性烧结的R-Fe-B永磁体具有增加的P含量。在径向各向异性烧结的R-Fe-B永磁体中,P主要存在于非磁性晶界相中。 富含稀土元素。 发明人的研究表明,次磷酸钠与矿物油,合成油或它们的混合物的比例优选为0.01-0.5质量%,使得烧结体中P的含量为0.001-0.05质量%。 次磷酸钠在甘油或乙醇中的溶液的添加可以在将细粉回收到矿物油,合成油或其混合物中之前或之后进行。 \n\n [0044] 在任何情况下,当将细粉与矿物油,合成油或其混合物混合以形成浆料时,通过矿物油,合成油或其混合物的屏蔽作用可防止细粉氧化和氮化。 空气中的细粉。 因此,所得的烧结体中的O和N的含量与细粉中的O和N的含量基本没有差异。 \n\n (C)浆液的形成 \n\n [0045]  图2 图1表示在本发明的方法中使用的模制设备的例子。 附图标记11表示的区域是成型装置的垂直截面,附图标记12表示的区域是成型装置中的模具的水平截面图,其放大图(正方形区域)  。 模具包括实心圆柱芯4,中空圆柱形模具部件3,下冲头9和上冲头10,由它们包围的空间是型腔6。中空圆柱形模具部件3由模具壳体2支撑。 一对磁场产生线圈1在芯4的上下位置处布置,以将磁通量7通过芯4施加到腔体6中。模壳2具有在其上开口的浆料注入孔5。 空腔6。 \n\n [0046] 优选在模具腔中敞开的浆料注入孔5的轴向,在压力下将浆料注入其中,该浆料注入孔5的轴向偏离模具中的中心型芯4的中心O。 在轴向偏离芯部中心O的浆料注入孔4的情况下,在压力下注入的细粉浆料沿芯部4的外周面或内部沿着环形腔6平滑地并且基本上螺旋地填充环形腔6。 在不撞击模芯4的情况下,在模子的表面上产生高填充密度。 \n\n [0047] 另一方面,当浆液注入孔5的轴向通过模芯的中心O时,在压力下垂直注入冲模芯4的浆液被分为左右流动,并在碰撞时汇聚。 与浆液注入孔5相对的位置为180°。 这产生所谓的结,从而在所得的烧结体中产生裂纹。 \n\n [0048] 在本发明中,如图  图2 浆料注入孔5的中心轴线与模芯4的半径(连接点A的直线,浆料注入孔5的中心轴线相交的直线)之间的角度θ(直角或锐角) 芯4,芯中心O)为5°至90°,优选为10°至90°,特别是30°至90°,但是根据模腔6的尺寸可能略有不同。 \n\n [0049] 尽管没有特别限制,但是将浆料注入模腔6的注入压力优选为4.9×10 4。 [0050] 施加到模腔6中以使浆料中的细粉取向的径向磁场的强度优选为159kA / m(约2kOe)以上,更优选为239kA / m(约3kOe)以上。 在压力下注入浆料之后,在保持定向磁场的同时在压力下进行湿法成型。 当取向磁场的强度小于159kA / m(约2kOe)时,细粉的取向不足,不能获得良好的磁性能。 在施加159 kA / m(约2 kOe)或更大的第一定向磁场的同时将浆料注入模腔6的过程中或之后,可以通过施加比第二个更高的第二取向磁场在压力下对浆料进行湿法成型。 第一定向磁场。 在上述条件下以改善的流动性对浆料进行湿法成型可以提供具有高达4.0-4.8g / cm 3的密度的生坯。 [0051] 在减压下加热所得生坯,以从生坯中除去矿物油,合成油或其混合物。 生坯的减压热处理条件是真空度为13.3Pa(约0.1Torr)或更低,例如6.7Pa(约5.0×10 -2)。 [0052] 生坯的烧结在0.13Pa(约0.001Torr)或更低的真空度下进行,优选为6.7×10 -2。 [0053] 如上所述,通过在径向磁场下将具有改善的流动性的浆料在压力下基本上螺旋状且平滑地注入到环形模腔中,可以获得高的填充率并因此获得高的生坯密度,从而使其成为可能。 以防止生坯和烧结体开裂,碎裂,变形等。 因此,可以提供外径为10〜100mm,内径为8〜96mm,高度为10〜70mm的放射状的环状烧结永久磁铁。 本发明特别适用于生产外径为10-30mm,内径为8-28mm,高度为10-50mm的小环形磁铁。 \n\n [0054] 因为浆料的平滑填充是在定向磁场中进行的,所以可以提供具有高且均匀密度的生坯,并且因此可以提供表面磁通密度沿其轴向方向均匀分布的环形磁体。 当表面磁通密度的变化在环形磁体的轴向上为7.5%或更小时,当将环形磁体用于电动机中时,可以充分抑制齿槽转矩(特别是较高的齿槽转矩)。 当表面磁通密度的变化为5%或更小,特别是3%或更小时,可以获得没有能量损失的极安静的电动机。 \n\n [0055] 下面将参考实施例具体描述本发明,而无意限制本发明的范围。 顺便提及,在室温(25℃)下测量磁性能,并且通过空气渗透法测量粉末的平均直径。 \n\n 例子1 \n\n [0056] 锭的质量组成为:Nd 17.6%,Pr 7.9%,Dy 5%,B的1.1%,Al的0.08%,Co的1.5%,Co的0.1%,Cu的0.1%,P的0.01%,0.01% 产生了O,0.004%的C和0.006%的N(余量为Fe)。 将该锭粉碎成颗粒尺寸为20-500μm的粗粉。 组成分析表明,该粗粉的质量组成为Nd的17.5%,Pr的7.7%,Dy的5%,B的1.1%,Al的0.08%,Co的1.5%,Cu的0.1%,0.0的质量。  P为1%,O为0.15%,C为0.015%,N为0.006%,其余为Fe。 \n\n [0057] 在将100kg这种粗粉装入喷射磨机中之后,用Ar气代替喷射磨机中的气氛,使得气氛中的氧浓度基本上为0%。 接下来,引入氮气使得Ar气中的氮气浓度为0.005%。 在这种气氛下,将粗粉在6.9 x 10 5的压力下细粉碎。 [0058] 将该浆料在4.9×10 7的压力下在模腔中湿法成型。 [0059] 由与实施例1相同的组成,除了与实施例1相同的方式以外,由与实施例1相同的组成的铸锭制造粗粉。该粗粉的组成与实施例1相同,只是不含有P且为0.14%。 以与实施例1相同的方式将该粗粉末细粉碎。得到的细粉末的平均直径为4.5μm。 与实施例1同样地对由该微粉形成的烧结体进行组成分析,结果表明,该烧结体的质量组成为Nd的17.5%,Pr的7.7%,Dy的5%,B的1.1%。  ,0.08%的Al,1.5%的Co,0.1%的Cu,0.16%的O,0.070%的C和0.045%的N,其余为Fe。 对该烧结体进行机械加工以测量其磁性。 结果示于表1。表1表明,比较例1中的烧结体的矫顽力iHc比实施例1中的低。 \n\n 例子2 \n\n [0060] 质量组成为Nd 19.8%,Pr 8.9%,Dy 1.3%,B 1.1%,Al 0.10%,Co 2.5%,Nb 0.2%,Ga 0.08%,Ga 0.01%的铸锭 产生了O,0.003%的C和0.005%的N(余量为Fe)。 将该锭粉碎成颗粒尺寸为20-500μm的粗粉。 组成分析表明,该粗粉的质量组成为:Nd 19.7%,Pr 8.8%,Dy 1.3%,B 1.1%,Al 0.10%,Co 2.5%,Nb 0.2%,0.08质量%  %的Ga,0.12%的O,0.013%的C和0.007%的N,其余为Fe。 \n\n [0061] 将100kg的该粗粉与454g的次磷酸钠的按质量计5%的水溶液在纯水中混合,并在真空中干燥。 干燥后的粗粉的组成分析表明,其具有的质量组成为:Nd的19.7%,Pr的8.8%,Dy的1.3%,B的1.1%,Al的0.1%,Co的2.5%,Co的0.2%。  Nb,Ga的0.08%,P的0.008%,O的0.16%,C的0.013%,N的0.009%,其余为Fe。 以与实施例1相同的方式将该粗粉细粉碎。所得细粉的平均直径为4.7μm。 与实施例1同样地对由该微粉形成的烧结体进行组成分析,结果表明,其质量组成为:Nd 19.7%,Pr 8.8%,Dy 1.3%,B 1.1%,0.10质量%  Al的百分比,Co的2.5%,Nb的0.2%,Ga的0.08%,P的0.008%,O的0.18%,C的0.067%和N的0.055%,其余为Fe。 如表1所示,对该烧结体进行机械加工以测量其磁性能。 \n\n 比较例2 \n\n [0062] 除了不添加次磷酸钠水溶液以外,与实施例1同样地将100kg与实施例2相同的粗粉粉碎。 所得细粉的平均直径为4.7μm。 与实施例1同样地对由该微粉形成的烧结体进行组成分析,结果表明,其质量组成为:Nd 19.7%,Pr 8.8%,Dy 1.3%,B 1.1%,0.10质量%  Al的%,Co的2.5%,Nb的0.2%,Ga的0.08%,O的0.16%,C的0.067%和N的0.050%为余量,余量为Fe。 对该烧结体进行机械加工以测量其磁性。 如表1所示,该烧结体的矫顽力iHc低于实施例2。  \n\n 例子3 \n\n [0063] 用于R-Fe-B永磁体的粗粉,其质量组成为:Nd 19.85%,Pr 8.95%,Dy 1.00%,B 1.02%,Al 0.10%,Co 2.00%,Co 0.10% 将Cu,0.15%的O,0.04%的C和0.02%的N(余量为Fe)装入喷射磨中。 用氮气置换喷射磨中的气氛后,将粗粉在6.9 x 10 5的压力下细粉碎。 [0064] 将该矿物油预先与质量分数为5%的次磷酸钠在甘油中的溶液混合,使得次磷酸钠与矿物油的比例为0.1质量%。 浆料中的矿物油与细粉的质量比为1:3。 所得细粉的平均直径为4.5μm。 将如此产生的浆液在压力下注入模具的型腔中,该型腔设有用于产生定向磁场的线圈,如图1所示。  图2 ,进行成型。 \n\n [0065] 浆料注入孔5的轴向与模芯4的径向之间的角度θ为30°。 施加到型腔的径向磁场强度为239 kA / m(3 kOe),注浆压力为3.9 x 10 5 [0066] 将该生坯在6.7 Pa的减压下于200°C进行除油处理(5 x 10 -2 [0067] 如图1所示,从烧结体20切出5mm×7mm×1mm(与磁化方向一致的1mm厚度方向)的试验片21b。  图3 。 顺便提及,附图标记21表示切割之前的测试件。 沿厚度方向堆叠的八个测试片21b的磁性能的测量表明,该测试片具有如表3所示的高磁性能。对该烧结体的组成分析表明,其质量组成为19.85%。  Nd,Pr的8.95%,Dy的1.00%,B的1.02%,Al的0.10%,Co的2.00%,Cu的0.10%,O的0.17%,C的0.06%,N的0.05%和0.01%  P,其余为Fe。 作为测试片21b的EPMA的线分析的结果,观察到P的峰,如图1所示。  图4 。 很明显从  图4  P主要存在于晶界富稀土相中。 \n\n 例子4 \n\n [0068] 以与实施例3相同的方式将与实施例3相同的粗粉细粉碎,并回收到矿物油(出光兴产株式会社制“ Super Sol PA30”)中,形成浆料。 矿物油与细粉的质量比为1:3。 所得细粉的平均直径为4.8μm。 将该浆液与按质量计10%的次磷酸钠在乙醇中的溶液混合,使得次磷酸钠与矿物油的比例为0.3质量%。 \n\n [0069] 将得到的浆料在压力下注入到模腔中,其中,浆料注入孔的轴线与模芯的半径之间的角度θ为5°,并且以与以下相同的方式在磁场中湿法成型。 在实施例3中,获得外径为24.5mm,内径为17.4mm,高度为30.0mm的生坯。 生坯的密度为4.40 g / cm 3 [0070] 以与实施例3相同的方式对该生坯进行除油和烧结,从而获得外径为20.1mm,内径为14.9mm,高度为26.2mm的烧结体。 烧结体的密度为7.56g / cm 3。 [0071] 如图1所示,从该烧结体切出试验片21b。  图3 。 切割试验片21b的位置以及测量其尺寸和磁性的条件与实施例3相同。表3示出了良好的磁性。 烧结体的组成分析表明,其质量组成为:Nd为19.85%,Pr为8.95%,Dy为1.00%,B为1.02%,Al为0.10%,Co为2.00%,Cu为0.10%。  O为0.16%,C为0.06%,N为0.04%,P为0.03%,其余为Fe。 作为测试片21b的EPMA的线分析的结果,P的峰如图所示被欣赏。  图5 。 \n\n 例子5 \n\n [0072] 将实施例3中制备的浆料在压力下注入模腔中,向其施加239 kA / m(3 kOe)的径向磁场,并以与实施例3相同的方式在磁场中湿法成型。 浆料注入压力为3.9×10 5。 [0073] 以与实施例3相同的方式对该生坯进行除油和烧结,以获得外径为19.9mm,内径为15.1mm,高度为26.1mm的烧结体。 烧结体的密度为7.59g / cm 3。 [0074] 将实施例3中制得的浆料在压力下注入模腔中,其中浆料注入孔的轴线与模芯半径之间的角度θ为45°,并在该模腔中的磁场中湿法成型。 与实施例3相同。在本实施例中,将大口径环形磁铁的模具更换为一个。 施加到空腔的径向磁场强度为478 kA / m(约6 kOe),注入压力为5.9 x 10 5 [0075] 以与实施例3相同的方式对该生坯进行除油和烧结,从而获得外径为92.5mm,内径为81.5mm,高度为18mm的烧结体。 烧结体的密度为7.57g / cm 3。 [0076] 将实施例3中制得的浆料在压力下注入模腔中,其中浆料注入孔的轴线与模芯半径之间的角度θ为15°,并在该模腔中的磁场中湿法成型。 以与实施例3相同的方式。在该实施例中,将模具换成用于中径长环磁体的模具。 施加到空腔的径向磁场的强度为199 kA / m(约2.5 kOe),注入压力为2.0 x 10 5 [0077] 以与实施例3相同的方式对该生坯进行除油和烧结,从而获得外径为40.4mm,内径为35.0mm,高度为65.2mm的烧结体。 烧结体的密度为7.59g / cm 3。 [0078] 以与实施例3相同的方式将与实施例3相同的粗粉细粉碎,并且将所得的细粉回收于矿物油(出光兴产株式会社制“ Super Sol PA30”)中,从而形成。 浆液。 矿物油与细粉的质量比为1:3。 细粉的平均直径为4.5μm。 预先将矿物油与次磷酸钠在甘油中的5质量%溶液混合,使得次磷酸钠与矿物油的比例为1质量%。 以与实施例3相同的方式,将得到的浆料在压力下注入模腔中并在磁场中湿法成型,从而获得外径为24.5mm,内径为17.4mm,高度为1mm的生坯。  30.0毫米 生坯的密度为4.35g / cm 3。 [0079] 以与实施例3相同的方式对该生坯进行除油和烧结,从而获得外径为20.2mm,内径为15.1mm,高度为25.9mm的烧结体。 烧结体的密度为7.58g / cm 3。 [0080] 以与实施例3相同的方式将与实施例3相同的粗粉细粉碎,并且将所得的细粉回收于矿物油(出光兴产株式会社制“ Super Sol PA30”)中,从而形成。 浆液。 矿物油与细粉的质量比为1:3。 细粉的平均直径为4.5μm。 没有向任何矿物油和浆液中添加流动性改进剂(次磷酸钠在甘油或乙醇中的溶液)。 以与实施例3相同的方式,将该浆料在压力下注入到型腔中并在磁场中湿法成型。但是,由于在压力下注入时浆料的流动性差,因此填充率低。 在模腔中,所得生坯的尺寸为外径24.5mm,内径17.4mm和高度26.5mm。 生坯的密度为3.80g / cm 3。 [0081] 以与实施例3相同的方式对该生坯进行除油和烧结,从而获得外径为19.7mm,内径为14.8mm,高度为23.3mm的烧结体。 烧结体的密度为7.57g / cm 3。  图6 与实施例3和4的烧结体不同。 \n\n 比较例5 \n\n [0082] 将实施例3中制得的浆料在压力下注入到模腔中,其中浆料注入孔的轴向与模芯的径向方向对准(θ= 0°),并在磁场中湿法成型。 以与实施例3中相同的方式进行电场处理,以获得外径为24.5mm,内径为17.4mm,高度为30.0mm的生坯。 生坯的密度为4.29 g / cm 3 [0083] 将实施例3中制得的浆料在压力下注入模腔中,并且以与实施例3中相同的方式在79.6kA / m(1.0kOe)的定向磁场中湿法成型,以获得外部的生坯。 直径为24.5毫米,内径为17.4毫米,高度为30.0毫米。 生坯的密度为4.32g / cm 3。 [0084] 该烧结体通过加工成外径为19.6mm,内径为15.4mm,高度为25.0mm而精加工。 通过磁化形成四个磁极之后,测量表面磁通密度。 结果,峰值低于表3所示的实施例3。从烧结体切出的8个5mm×7mm×1mm的试验片在厚度方向上堆叠以测量其磁性能。 结果,证实了磁性能低于实施例3的磁性能,如表3所示。 \n\n 例子八 \n\n [0085] 用于R-Fe-B永磁体的粗粉,其质量组成为:Nd 22.00%,Pr 5.50%,Dy 5.00%,B 1.03%,Al 0.08%,Co 1.00%,Co 0.12% 将Cu,0.10%的Ga,0.09%的O,0.03%的C和0.015%的N(余量为Fe)装入喷射式磨机中。 用氮气置换喷射磨中的气氛后,将粗粉在6.4×10 5的压力下细粉碎。 [0086] 将该细粉与矿物油(出光兴产株式会社制“ Super Sol PA30”)混合,形成浆料。 矿物油包含按质量计5%的次磷酸钠在甘油中的溶液,使得次磷酸钠与矿物油的比例为0.2质量%。 细粉与矿物油的质量比为1:3。 将所得浆料在压力下注入到环形模腔中,向环形模腔中施加径向磁场,并以与实施例3相同的方式进行湿法成型,从而获得外径为24.5mm的生坯。  ,内径为17.4毫米,高度为30.0毫米。 生坯的密度为4.45 g / cm 3 [0087] 将该生坯在6.7 Pa的减压下于1070°C烧结(5 x 10 -5 [0088] 在不与矿物油混合的情况下将实施例8中制得的干燥细粉填充在与实施例8中相同的模腔中,并在7.8×10 7的减压下在239kA / m(3kOe)的定向磁场中成型。 [0089] 在不与矿物油混合的情况下,将实施例8中制得的干燥细粉从上方装入实施例8的模腔中,并在7.8 x 10 7的压力下模制 [0090] 该整体生坯在6.7 Pa(5.0 x 10 -5)的减压下于1070°C烧结 表2    没有。 绿色身体烧结体尺寸(1)  尺寸(毫米)(1) 密度(g / cm 3  工作之前 工作后  例子324.5 x 17.4 x 30.04.3020.0 x 15.0 x 26.019.6 x 15.4 x 25.0  例子424.5 x 17.4 x 30.04.4020.1 x 14.9 x 26.219.6 x 15.4 x 25.0  例子524.5 x 17.4 x 30.04.2519.9 x 15.1 x 26.119.6 x 15.4 x 25.0  例子6114.0 x 95.0 x 20.54.2892.5 x 81.5 x 18.091.5 x 80.5 x 16.0  例子750.0x40.0x76.04.1540.4 x 35.0 x 65.240.0 x 35.4 x 64.2  例子八24.5 x 17.4 x 30.04.4520.3 x 15.1 x 25.819.6 x 15.4 x 25.0  比较例324.5 x 17.4 x 30.04.3520.2 x 15.1 x 25.9 工作中损坏  比较例424.5 x 17.4 x 26.53.8019.7 x 14.8 x 23.3 无法工作  比较例524.5 x 17.4 x 30.04.2920.1 x 15.1 x 25.9 无法工作  比较例624.5 x 17.4 x 30.04.3220.3 x 15.2 x 25.819.6 x 15.4 x 25.0  比较例724.5 x 17.4 x 30.03.7820.1 x 15.0 x 25.919.6 x 15.4 x 25.0  比较例824.5 x 17.4 x 30.03.7420.0 x 14.9 x 26.119.6 x 15.4 x 25.0  注意:(1)尺寸为外径x内径x高度。   \n\n 表3    没有。B的峰值0(1)  磁性能 溴(2) iHc(3) 最大(BH)(4)   例子3 4.5(4极)13.416.041.1  例子4 4.5(4极)13.416.441.2  例子5 4.6(4极)13.515.841.6  例子6 5.2(16极)13.615.542.2  例子7 4.3(8极)13.416.241.0  例子八 2.9(8极)12.223.534.5  比较例3 未测13.416.941.3  比较例4 未测13.316.440.2  比较例5 未测13.416.241.1  比较例6 3.2(4极)11.818.329.5  比较例7 2.9(8极)11.424.028.6  比较例8 3.1(8极)11.823.831.0  注意(1)B 0是在磁极的轴向上测量的表面磁通密度,并且在括号中示出了磁极的数量。  (2)x 10 -1    \n\n 例子9 \n\n [0091] 用于R-Fe-B永磁体的粗粉,其质量成分为:Nd 20.50%,Pr 9.25%,Dy 0.25%,B 1.03%,Al 0.08%,Co 2.00%,Co 0.10% 将Cu,0.13%的O,0.04%的C和0.02%的N(余量为Fe)装入喷射磨中。 用氮气置换喷射磨中的气氛后,将粗粉在6.9 x 10 5的压力下细粉碎。 [0092] 将该矿物油预先与次磷酸钠在甘油中的5质量%溶液混合,以使次磷酸钠与矿物油的比例为0.2质量%。 细粉与矿物油的质量比为1:3。 细粉的平均直径为4.7μm。 将如此产生的浆液在压力下注入如图1所示的模具中。  图2 ,其中,浆液注入孔5的轴线与模芯4的半径之间的角度θ为45°。 施加到型腔的径向磁场强度为239 kA / m(约3 kOe),浆料注入压力为2.9 x 10 5 [0093] 将该生坯在6.7 Pa(约5.0 x 10 -2)的减压下于180°C进行除油处理。 [0094] 通过孔传感器探针在环形磁体的外周表面上沿磁极的轴向测量被磁化为具有四个磁极的环形磁体的表面磁通密度B 0。 表面磁通密度B 0的峰值(最大值)和表面磁通密度B 0的变化,由[(B 0的最大值-B 0的最小值)/ B 0的最大值] x表示 由表面磁通密度B 0的测定结果求出100(%)。 结果示于表5和  图7 。 在  图7 ,纵轴表示环形磁铁的磁极的轴向的表面磁通密度B 0(T),横轴表示探头沿环形磁铁的轴向移动的距离(mm)。  。 距离H对应于环形磁体在其轴向方向上的长度(17.2mm)。 由表5可知,表面磁通密度B 0的峰值大,变化小。 \n\n [0095] 如图1所示,从以相同方式制造的烧结体20中切出8个4mm×7mm×1mm的试验片21b。  图3  并沿厚度方向堆叠以测量其磁性能。 结果,证实它们具有高的磁性,如表5所示。烧结体的组成分析表明,其质量组成为Nd的20.50%,Pr的9.25%,Dy的0.25%,Dy的1.03。  B的%,Al的0.08%,Co的2.00%,Cu的0.10%,O的0.15%,C的0.06%,N的0.05%和P的0.018%,余量为Fe。 测试片21b的EPMA的线分析表明,存在P的峰,如图2所示。  图8 。 很明显从  图8  P主要存在于晶界富稀土相中。 \n\n 例子十 \n\n [0096] 以与实施例9相同的方式,将与实施例9相同的粗粉细粉碎并回收在矿物油(出光兴产株式会社制“ Super Sol PA30”)中,形成浆液。 矿物油与细粉的质量比为1:3。 所得细粉的平均直径为4.6μm。 将该浆料与次磷酸钠在乙醇中的10质量%溶液混合,使得次磷酸钠与矿物油的比例为0.4质量%。 将该浆料在压力下注入到模腔中,其中,浆料注入孔的轴线与模芯的半径之间的角度θ为30°,并且以与在图1中相同的方式在磁场中湿法成型。 实施例9,获得外径为25.3mm,内径为17.5mm,高度为21.8mm的生坯。 生坯的密度为4.35g / cm 3。 [0097] 以与实施例9相同的方式对该生坯进行除油和烧结,从而获得外径为20.6mm,内径为15.3mm,高度为18.75mm的烧结体。 烧结体的密度为7.55×g / cm 3。 [0098] 如图所示  图3 然后,以与实施例9相同的方式从烧结体切出试验片。磁性能的测定结果示于表5。烧结体的组成分析表明其质量组成为20.50%。  Nd,Pr的9.25%,Dy的0.25%,B的1.03%,Al的0.08%,Co的2.00%,Cu的0.10%,O的0.16%,C的0.07%,N的0.06%和0.037  P的百分比,其余为Fe。 作为该烧结体的EPMA的线分析的结果,如图所示,确认了P的峰。  图9 。 \n\n 例子11 \n\n [0099] 将实施例9中制得的浆料在压力下注入模腔中,其中浆料注入孔的轴线与模芯半径之间的角度θ为60°,并在该模腔中的磁场中湿法成型。 与实施例9相同。在本实施例中,改变型腔的尺寸。 施加到型腔的径向磁场强度为398 kA / m(约5 kOe),注入压力为5.9 x 10 5 [0100] 以与实施例9相同的方式对该生坯进行除油和烧结,从而获得外径为27.4mm,内径为21.1mm,高度为47.4mm的烧结体。 烧结体的密度为7.57g / cm 3。 [0101] 将烧结体磁化为具有四个磁极,并在磁极的轴向上测量其表面磁通密度。 如表5所示,表面磁通密度的峰值高且偏差小。从烧结体切出的8个4mm×7mm×1mm的试验片在厚度方向上堆叠以测量其磁性能。 结果,证实它们具有高的磁性,如表5所示。 \n\n 例子12 \n\n [0102] 在3.9×10 5的压力下注入实施例11中制备的浆料。 [0103] 以与实施例9相同的方式对该生坯进行除油和烧结,从而获得外径为27.4mm,内径为21.1mm,高度为47.1mm的烧结体。 烧结体的密度为7.57g / cm 3。 [0104] 在磁化为具有四个磁极之后,测量表面磁通密度B 0。 结果,表面磁通密度B 0具有较高的峰值,并且如表5所示具有小的变化。以与实施例9相同的方式切出的测试片具有较高的磁性能,如表5所示。 \n\n 例子13 \n\n [0105] 将实施例9中制得的浆料在压力下注入模腔中,其中浆料注入孔的轴线与模芯半径之间的角度θ为15°,并在该模腔中的磁场中湿法成型。 与实施例9相同。在本实施例中,改变型腔的尺寸。 施加到空腔的径向磁场强度为223 kA / m(2.8 kOe),注入压力为3.9 x 10 5 [0106] 以与实施例9相同的方式对该生坯进行除油和烧结,从而获得外径为14.6mm,内径为9.6mm,高度为14.2mm的烧结体。 烧结体的密度为7.58g / cm 3。 [0107] 将烧结体磁化为具有四个磁极,并在磁极的轴向上测量其表面磁通密度。 结果,如表5所示,表面磁通密度的峰值高且偏差小。从烧结体切出的8mm×7mm×1mm的八个试验片在厚度方向上堆叠以进行测量。 它们的磁性。 结果,证实它们具有高的磁性,如表5所示。 \n\n 比较例9 \n\n [0108] 以与实施例9相同的方式,将与实施例9相同的粗粉细粉碎并回收在矿物油(出光兴产株式会社制“ Super Sol PA30”)中,形成浆液。 矿物油与细粉的质量比为1:3。 所得细粉的平均直径为4.6μm。 没有将任何矿物油和浆液与次磷酸钠的甘油或乙醇溶液混合。 以与实施例9相同的方式在压力下注入该浆料并在磁场中湿法成型。但是,由于浆料的流动性差并且因此对模腔的填充率低,因此所得生坯具有一定尺寸。 外径为25.3毫米,内径为17.5毫米,高度为19.5毫米。 生坯的密度为3.85g / cm 3。 [0109] 以与实施例9相同的方式对该生坯进行除油和烧结,从而获得外径为20.3mm,内径为15.0mm,高度为15.9mm的烧结体。 烧结体的密度为7.55g / cm 3。  图10 。 \n\n 比较例10 \n\n [0110] 将实施例9中制得的浆料在压力下注入到模腔中,其中浆料注入孔的轴向与模芯的径向方向对准(θ= 0°),并在磁场中湿法成型。 以与实施例9中相同的方式在实心场中获得生坯,该生坯的外径为25.3mm,内径为17.5mm,高度为21.7mm。 生坯的密度为4.38g / cm 3。 [0111] 以与实施例9相同的方式对该生坯进行除油和烧结,从而获得外径为20.6mm,内径为15.3mm,高度为18.7mm的烧结体。 烧结体的密度为7.56g / cm 3。 [0112] 用于R-Fe-B永磁体的粗粉,其质量组成为Nd的22.25%,Pr的10.00%,Dy的0.25%,B的1.03%,Al的0.07%,Co的2.00%,Co的0.12%。 将Cu,0.10%的Ga,0.15%的O,0.03%的C和0.015%的N(余量为Fe)装入喷射式磨机中。 用氮气置换喷射磨中的气氛后,将粗粉在6.4×10 5的压力下细粉碎。 [0113] 将所得的干燥细粉从上方装入与实施例9相同的模腔中,不同之处在于没有浆料注入孔并且深度为1/3深度而不与矿物油混合,以在7.8x的压力下产生第一生坯。  10 7 [0114] 在6.70×10 -3的减压下于1070℃烧结该生坯。 [0115] 将该烧结体磁化为具有四个磁极,并在磁极的轴向上测量其表面磁通密度。 如表5所示  图11 比较例11的表面磁通密度的峰值比实施例9的峰值低,三件式成型接合处的偏差大。 从烧结体切出的8个4mm×7mm×1mm的试验片在厚度方向上堆叠以测量其磁性能。 结果,证实了比较例11的磁性能低于表5中所示的实施例9的磁性能。另外,烧结体在三件式成型接合处的表面磁通密度B 0局部较低。 因此,当装配在电动机中时,其齿槽特性比实施例9的齿槽特性差。 \n\n 比较例12 \n\n [0116] 将干燥的细粉从上方装入与比较例11相同的模腔中,不同之处在于没有浆料注入孔并且深度为1/3,且未与矿物油混合,从而在7.8 x 10的压力下产生第一生坯 7 [0117] 在6.70×10 -3的减压下于1070℃烧结该生坯。 [0118] 将质量成分为30.0%的Nd,0.90%的B,5.00%的Co和0.20%的Ga(其余为Fe)的母合金装入其底部有孔的石英喷嘴中, 将石英喷嘴内部抽空至0.4 Pa(约3 x 10 -3 [0119] 将薄带状合金粗粉碎至500μm以下,并且将所得粗粉与0.2质量%的片状石墨和0.3质量%的低熔点非晶硼硅酸铋玻璃混合。 将得到的粗粉混合物在4.9×10 8的压力下冷压。 [0120] 以与实施例9相同的方式将该环形磁体磁化为具有四个磁极。测量了烧结体的表面磁通密度。 如表5所示  图12 比较例13的表面磁通密度在轴向两端部均较低,并且其峰值比具有较大变化的实施例9的峰值低。 从产品切出的4mm×7mm×1mm的试验片上的磁性能的测量结果表明,比较例13的磁性能低于实施例9的磁性能,如表5所示。 当组装在电动机中时,比较例13的齿槽比实施例9的齿槽大。 \n\n 比较例14 \n\n [0121] 由母合金以相同的方式组成具有28.0质量%的Nd,0.50%的Ce,0.90%的B,3.0%的Co和0.15%的Ga(余量为Fe)的成分的薄带。 如比较例13中那样,将所得的薄带粉碎成粗粉。 将该粗粉末制成5.7g / cm 3的生压坯。 [0122] 通过机械加工从杯体切下底部。 另外,从相对侧的底部切下具有裂纹的端部。 将所得环在其内表面和外表面中加工成外径为26.8mm,内径为21.8mm,高度为45.0mm的产品尺寸。 产物对热塑加工体的产率低至29.1%。 \n\n [0123] 以与实施例11相同的方式将该产品磁化为具有四个磁极。测量烧结体的表面磁通密度B 0。 如表5所示,比较例14的表面磁通密度B 0在轴向两端部均较低,并且其峰值比具有较大变化的实施例11的峰值低。 从产品切出的4mm×7mm×1mm的试验片上的磁性能的测量结果表明,比较例14的磁性能低于实施例11的磁性能,如表5所示。 当组装在电动机中时,比较例14的齿槽比实施例11的齿槽大。 \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n 表4    没有。 绿色身体烧结体尺寸(1)  尺寸(毫米)(1) 密度(g / cm 3 生产率(/ h)(2)  工作之前 工作后  例子925.3 x 17.5 x 21.84.4012020.6 x 15.3 x 18.820.1 x 15.9 x 172  例子十25.3 x 17.5 x 21.84.3512320.6 x 15.3 x 18.7520.1 x 15.9 x 17.2  例子1133.4 x 24.3 x 55.14.4512527.4 x 21.1 x 47.426.8 x 21.8 x 45.0  例子1233.4 x 24.3 x 54.84.4512127.4 x 21.1 x 47.126.8 x 21.8 x 45.0  例子1317.9 x 11.1 x 16.44.4014014.6 x 9.6 x 14.214.0 x 10.0 x 12.5  比较例925.3 x 17.5 x 19.53.8511620.3 x 15.0 x 15.9-  比较例1025.3 x 17.5 x 21.74.3811820.6 x 15.3 x 18.7-  比较例1125.3 x 17.5 x 21.53 .804820.7 x 15.4 x 18.820.1 x 15.9 x 17.2  比较例1233.4 x 24.3 x 54.63.754527.3 x 21.4 x 47.526.8 x 21.8 x 45.0  比较例13--322.0 x 14.5 x 48.020.1 x 15.9 x 28.0  比较例14--430.0 x 19.5 x 65.026.8 x 21.8 x 45.0  注(1)尺寸为外径×内径×高度。  (2)每1小时生产的生坯数量。   \n\n 表5    没有。 产量 (%)B的峰值0(1)  B 0的变化(%) 磁性能 溴(2) iHc(3) 最大(BH)(4)   例子972.7 5.0(4极)2.513.815.843.5  例子十72.9 5.1(4极)2.713.915.544.3  例子1175.5 5.6(4极)3.014.115.045.7  例子1276.0 5.5(4极)2.814.015.245.0  例子1369.8 4.6(4极)2.613.716.442.5  比较例9---13.716.142.8  比较例10---13.815.743.4  比较例1172.3 4.5(4极)14.512.616.736.1  比较例1280.1 5.0(4极)15.012.716.537.2  比较例1317.0 4.7(4极)8.012.912.337.0  比较例1429.1 5.2(4极) 7.513.111.038.6  注意(1)B 0是在磁极的轴向上测量的表面磁通密度,并且在括号中示出了磁极的数量。  (2)x 10 -1    \n\n [0124] 含有所需量的P的本发明的烧结永磁体具有改善的矫顽力iHc。 本发明的方法可以生产径向各向异性烧结的R-Fe-B永磁体,该永磁体没有变形和破裂并且磁取向优异。 本发明的烧结永磁体特别适合用作用于马达等的环形磁体。');
INSERT INTO `os_patent_instruction_text` VALUES (13000, 22829, '기 술 분 야\n\n본 발명은 일반적으로 각종 모터 및 액츄에이터에 적절하게 사용되는 나노컴포지트 자석 및 이러한 자석의 제조방법에 관한 것으로, 더욱 상세하게는R2Fe14B형 결정 구조의 경질 자석상(hard magnetic phase)과 α-F상 등의다른 연질 자석상(soft magnetic phase)들을 갖는 화합물인 나노컴포지트 자석에 관한 것이다.\n\n배 경 기 술\n\n최근, 가전용 기기, OA 기기 및 여러 가지 형태의 전장품 등에 있어서, 한층 높은 고성능화와 소형 경량화가 요구되고 있다.\n\n이 때문에 이들 기기에 사용되는 영구자석에 대해서는, 자기회로로서 작동될 때 질량에 대한 성능을 최대로 하는 것이 요구되고 있고, 예를 들면, 잔류자석밀도(Br)가 적어도 0.5T(테스라) 이상의 영구자석을이용하는 것이 요구되고 있다.\n\n그러나, 종래부터 비교적 저가여서 광범위하게 사용되어 왔던 경질 페라이트 자석(hard ferrite magnets)은 잔류자속밀도(Br)를 0.5T 이상으로 하는 것은 불가능하다.\n\n최근에 적어도 0.5T 이상의 높은 잔류자속밀도(Br)를 갖는 전형적인 영구자석으로서는, 분말야금법(powdermetallurgical process)에 의하여 제조되는 Sm-Co계 자석이 알려져 있다.\n\n잔류자속밀도가 큰 다른 영구자석의\n\n예로는 분말야금법에 의하여 제조되는 Nd-Fe-B계 소결자석(sinterd magnet)이나, 액체급랭법(melt quenchingprocess)에 의하여 제조되는 Nd-Fe-B계 급랭응고자석(rapidly solidified magnet)이 큰 잔류자속밀도(Br)를 발휘할 수 있다.\n\n전자의 Nd-Fe-B계 소결 자석은, 예를 들면 일본국 특허 공개 공보 제 59-46008 호에 개시되어있고, 후자의 Nd-Fe-B계 급랭응고자석은 예를 들면 일본국 특허 공개 공보 제 60-9852 호에 개시되어 있다.\n\n그러나 Sm-Co계 자석은 Sm 및 Co는 모두 비싼 재질이기 때문에 가격이 비싸다는 문제점이 있다.\n\n한편, Nd-Fe-B계 자석은, 비교적 저가의 Fe를 주성분으로 하여(전체의 약 60중량％ 내지 약 70중량％ 정도) 이루어지기 때문에, Sm-Co계 자석에 비하여 훨씬 저가이지만, 보통 전체의 약 10원자％ 내지 약 15원자％ 정도를차지하는 Nd의 분리정제 및 환원반응에 대규모의 설비와 많은 제조 및 처리 공정수가 필요하기 때문에 여전히Nd-Fe-B계 자석을 생산하는 데는 비용이 많이 든다.\n\n또한, 분말야금법은 보통 그 자체로 비교적 제조 공정수가많다.\n\n분말야금법에 의해 형성된 Nd-Fe-B계 소결 자석에 비해, Nd-Fe-B계 급속 응고 자석은, 액체급랭법에 의해 저렴하게 생산될 수 있다.\n\n이는 Nd-Fe-B계 급랭 자석이 용해공정, 액체냉각공정 및 열처리공정이라고 하는 비교적간단한 공정으로 얻어지기 때문이다.\n\n그러나, 액체급랭법에 의해서 벌크상의 영구자석을 얻기 위해서는, 급랭합금으로 제조되는 자석분말을 수지 바인더와 혼합하여 본드자석을 형성할 필요가 있기 때문에 성형되는 본드자석에서 차지하는 자석분말의 체적비율은 겨우 약 80％ 정도이다.\n\n또한, 액체급랭법에 의하여 제조되는 급속응고합금은, 자기적으로 등방성을 지닌다.\n\n이상의 이유에서, 액체급랭법을 이용하여 제조되는 Nd-Fe-B계 급속 응고 자석은, 분말야금법에 의하여 제조되는자기적으로 이방성인 Nd-Fe-B계 소결 자석에 비하여 낮은 잔류자속밀도(Br)를 갖는다는 문제점을 가지고 있다.\n\n일본 특허 공개 공보 제 1-7502 호에 기재되어 있는 바와 같이, Zr, Nb, Mo, Hf, Ta 및 W로 구성되는 군에서 선택되는 적어도 1종의 원소와, Ti, V 및 Cr로 구성되는 군에서 선택되는 적어도 1종의 원소를 복합적으로 첨가하는 것이 Nd-Fe-B계 급랭응고자석의 특성을 개선하기 위한 방법으로서 유효하다.\n\n이와 같은 원소의 첨가에 의하\n\n여, 자석의 보자력(Hcj)과 내식성이 향상되지만, 잔류자속밀도(Br)를 개선하는 유효한 방법은, 본드자석(bondedmagnet)의 밀도를 향상하는 것 이외에는 알려져 있지 않다.\n\n또한 Nd-Fe-B계 급랭응고자석 중에 약 6원자％ 이상의 희토류원소(rare-earth elements)가 포함되어 있는 경우, 많은 선행기술에 의하면, 노즐을 통하여 냉각 롤러(chill roller)를 향해 용탕을 분사하는 멜트스피닝(melt spinning process)법이 용탕을 급랭 응고시키기 위하여 사용되고 있다.\n\nNd-Fe-B계 급랭응고자석에 대한 대체 자석 재료가 R. Coehoorn 등의 J. de Phys, C8, 1998, 669 내지 670면에제안되어 있다.\n\n이 Coehoorn 등의 재료는 희토류원소가 비교적 낮은 조성비율(즉, Nd3.8Fe77.2B19 근방의 조성,여기서 아래 첨자의 단위는 원자％를 나타냄)을 가지고, Fe3B 상을 주요 상으로 하는 조성을 가진다.\n\n이러한\n\n영구자석재료는 액체급랭법에 의하여 제조된 아모퍼스(amorphous) 합금에 대하여 결정화 및 열처리를 수행하는것에 의하여 얻어진다.\n\n또한, 결정화 재료는 연자성인 Fe3B상 및 경자성인 Nd2Fe14B상이 혼재하고 미세 결정 입자들(즉, 수 나노미터 정도 크기의 입자)이 균일하고 미세하게 이들 두개의 결정상태의 화합물로 분포되는 준안정구조를 구비하고 있다.\n\n이러한 이유로, \"나노컴포지트 자석\"이라고 불리고 있다.\n\n이러한 나노컴포지트 자석\n\n은 1T 이상의 높은 잔류자속밀도(Br)를 갖는 것으로 보고되고 있지만, 이러한 나노컴포지트 자석의 보자력(Hcj)은 예컨대, 약 160kA/m 내지 약 240kA/m로 비교적 낮다.\n\n이 때문에, 이러한 영구자석재료는 자석의 동작점이 1이상이 되는 경우에만 이용가능하다.\n\n또한, 예를 들어 일본 공개 공보 제 3-261104 호, 일본 특허 공보 제 2727505 호 및 일본 특허 공보 제 2727506호를 참조할 때, 자기특성(magnetic properties)을 향상시키기 위해서 나노컴포지트 자석의 재료 합금에 각종금속원소를 첨가하는 것이 제안되었지만,얻을 만큼 충분히 신뢰성 있지 않았다.\n\n항상 충분한 \"코스트당의 특성값(characteristic value per cost)\"을보다 상세하게는 이러한 기술에 의해 생산된 어떤 나노컴포지트 자석도여러 용도로 실제 사용될 만큼 충분한 크기의 보자력을 얻을 수 없으며 또한, 이들 자석 중 어느 것도 실제 사용될 만큼 충분한 자기특성을 발현할 수 없다.\n\nW. C. Chan 등은 결정 크기가 수십 ㎚ 정도인 Nd2Fe14B상 및 α­ Fe 상을 수득하는 방법을 보고하였다.\n\nW. C.\n\nChan 등의 \"THE EFFECTS OF REFRACTORY METALS ON THE MAGNETIC PROPERTIES OF α­Fe/R2Fe14B-TYPENANOCOMPOSITES\"(IEEE, Trans. Magn. No. 5, INTERMAG. 99 경주, 한국 pp. 3265-3267, 1999)등에 의하면,Chan 등의 기술은 아모퍼스 전구체 La를 재료 합금에 첨가시킨 후 재료 합금을 멜트스피닝하여 아모퍼스상(amorphous phase)을 주성분으로 하는 급랭응고합금을 얻고 이 합금을 열처리 및 결정화하여 Nd2Fe14B상 및α­Fe상을 동시에 모두 핵생성 및 성장시킨다.\n\n또한 이들 논문 등은 Ti와 같은 불용성 금속성분을 극소량(예컨대,약 2원자% 정도) 첨가함으로써 자석의 성능을 향상시킬 수 있으며 바람직하게는, 희토류 원소인 Nd의 조성비율을 약 9.5원자%에서 약 11.0원자%로 증가시킴으로써 Nd2Fe14B상 및 α­ Fe 상의 결정 크기를 감소시킬 수 있다는 것을 개시하고 있다.\n\n여기서 첨가된 불용성 금속 원소는 R2Fe23B 및 Fe3B와 같은 붕소화합물의 생성을 방지하여 자석이 본질적으로 Nd2Fe14B상 및 α­Fe상만으로 구성되게 한다.\n\nChan 등의 기술에 따라 노즐을 통하여고속으로 회전하는 냉각롤러의 표면상에 용탕을 분사하는 멜트스피닝법(melt spinning process)에 의해 급랭응고합금이 나노컴포지트 자석용으로 준비되었다.\n\n이 멜트스피닝법은 냉각율이 매우 좋으므로 아모퍼스 급랭응고합금을 충분히 효과적으로 제조할 수 있다.\n\n이러한 문제점들을 해결하기 위해서 본 발명은 일본 공개 공보 제 2002-175908 호에 개시되어 있는 전체 체적에대한\n\nR2Fe14B형\n\n결정\n\n구조의\n\n체적％가\n\n증가된\n\n화합물과\n\n같은\n\n개선된\n\n나노컴포지트\n\n자석을\n\n제공한다.\n\n상세하게는, 이러한 나노컴포지트 자석은 약 10원자%의 희토류 원소와 약 10원자% 이상의 붕소를 포함하는 재료합금에 Ti를 첨가하여 용융 합금이 급랭 응고하는 동안 α­ Fe 상이 과도하게 성장하지 않도록 함으로써 얻어질 수 있다.\n\n일본 특허 공보 제 2002-285301 호 및 일본 특허 공보 제 3297676 호는 나노컴포지트 자석에 첨가될 수도 있는많은 성분들, 예를 들어 Al, Si, V, Cr, Mn, Ga,Zr, Mb, Mo, Ag, Hf, Ta, W, Pt, Au 및 Pb 등을 개시하고 있다.\n\n일본 특개평 제 2002-175908 호에 개시된 나노컴포지트 자석에 있어서, Ti를 첨가하여 연질 페라이트상(softferrite phase))이 경질 페라이트상(hard ferrite phase)의 입계에 미세하게 분산되는 상태의 희소구조가 얻어졌지만, 희토류 원소의 조성비율이 이러한 나노컴포지트 자석보다 훨씬 작으면, 붕소의 조성비율이 약 10원자%이하로 감소되지 않기 때문에 자기특성이 우수한 나노컴포지트 자석이 얻어지지 않는다.\n\n그러나 희토류 원소가 약 10원자% 이하이고 붕소가 약 10원자% 이하인 재료 합금은 용융 시 점성이 과도하게 증가되어 생성된 급랭응고합금은 거의 소망의 미세 구조를 얻을 수 없다.\n\n이 용융 합금은 보통 비교적 고속으로냉각 롤러를 회전시키는 멜트스피닝법이나 비교적 저속으로 냉각 롤러를 회전시키는 스트립캐스팅 법(stripcasting process)일 수도 있는 액체급랭법에 의해서 급랭된다.\n\n여러 방법 중 스트립캐스팅법은 비교적 냉각율이 낮아서 비교적 두꺼운, 박판형 급랭응고 합금을 제조할 수 있기 때문에 효과적으로 박판형 급랭응고 합금을양산(mass production)할 수 있는 액체급랭법으로 여겨진다.\n\n그러나 희토류 원소의 조성비율이 약 7원자% 이하로 작은 나노컴포지트 자석을 스트립캐스팅법과 같이 비교적냉각율이 낮은 액체급랭법에 의해서 양산하기 위해서, 재료 합금이 약 10원자% 이상의 붕소를 함유할 필요가 있다.\n\n그렇지 않고 Ti가 Nb와 함께 또는 별도로 약 4원자％ 내지 약 7원자％의 희토류 원소와 약 10원자％ 내지약 15원자％의 붕소를 함유하는 재료 합금에 첨가되지 않는 경우에 합성 나노컴포지트 자석의 보자력(Hcj)이 예를\n\n들어\n\n모터에\n\n실제\n\n사용되는\n\n자석에\n\n필요한\n\n최소\n\n수준인\n\n약\n\n400㎄/m로\n\n떨어질\n\n것이며\n\n감자곡선\n\n(demagnetization curve)의 각형비(loop squareness)가 또한 좋지 않을 것이다.\n\n발명의 상세한 설명\n\n상술한 문제점들을 해결하기 위해서 본 발명의 바람직한 실시예는 희토류 원소는 비교적 소량 함유하고 붕소는비교적 다량 함유하고 있지만 우수한 자기특성을 나타낼 수 있는 나노컴포지트 자석을 제공한다.\n\n본 발명의 바람직한 실시예에 따른 나노컴포지트 자석은 그 조성식이 (Fe1-mTm)100-x-y-z-w-n(B1-pCp)xRyTizVwMn로 표현되고, 여기서 T는 Co 및 Ni로 구성된 군에서 선택되는 적어도 1종의 원소이며, R은 희토류 원소이며, M은 Al,Si, Cr, Mn, Cu, Zn, Ga, Nb, Zr, Mo, Ag, Ta 및 W로 구성된 군에서 선택되는 적어도 1종의 원소이며, 조성비율 x, y, z, w, n, m 및 p는 각각, 10원자％<x≤15원자％, 4원자％≤y<7원자％, 0.5원자％≤z≤8원자％, 0.01원자％≤w≤6원자％, 0원자％≤n≤10원자％, 0원자％≤m≤0.5원자％ 및 0.01원자％≤p≤0.5원자％의 부등식을바람직하게 만족한다.\n\n이 나노컴포지트 자석은 R2Fe14B형 결정 구조의 경질 페라이트상과 연질 페라이트상을 갖는 것이 바람직하다.\n\n나노컴포지트 자석의 보자력과 최대 에너지 적(積) 중 적어도 하나는 V를 함유하지 않는자석의 그것보다 적어도 1％ 이상인 것이 바람직하다.\n\n본 발명의 바람직한 일 실시예에 있어서, 나노컴포지트 자석은 바람직하게 Ti 및 V를 첨가함으로써 결정구조가R2Fe14B형인 경질 페라이트상을 적어도 약 40체적% 함유한다.\n\n본 발명의 바람직한 다른 실시예에 있어서, 결정구조가 R2Fe14B형인 경질 페라이트상은 약 10㎚ 내지 약 200㎚의평균 입경을 가지는 것이 바람직하며, 연질 페라이트상은 바람직하게 약 1㎚ 내지 약 100㎚의 평균 입경을 갖는다.\n\n본 발명의 바람직한 또 다른 실시예에 있어서, 연질 페라이트상은 바람직하게 α­ Fe 및 강자성 철계 붕화물을포함한다.\n\n본 발명의 바람직한 또 다른 실시예에 따른 나노컴포지트 자석용 급랭응고 합금을 제조하는 방법은 바람직하게는 그 조성식이 (Fe1-mTm)100-x-y-z-w-n(B1-pCp)xRyTizVwMn로\n\n표현되고, 여기서 T는 Co 및 Ni로 구성된 군에서 선택되는적어도 1종의 원소이며, R은 희토류 원소이며, M은 Al, Si, Cr, Mn, Cu, Zn, Ga, Nb, Zr, Mo, Ag, Ta 및 W로구성된 군에서 선택되는 적어도 1종의 원소이며, 조성비율 x, y, z, w, n, m 및 p는 각각, 10원자％<x≤15원자％, 4원자％≤y<7원자％, 0.5원자％≤z≤8원자％, 0.01원자％≤w≤6원자％, 0원자％≤n≤10원자％, 0원자％≤m≤0.5원자％ 및 0.01원자％≤p≤0.5원자％의 부등식을 만족하는 재료 합금의 용탕을 준비하는 단계를 포함한다.\n\n이 방법은 급속응고합금을 얻기 위해서 용탕을 급랭 및 응고하는 단계를 더 포함한다.\n\n본 발명의 바람직한 일 실시예에 있어서, 급랭 단계는 바람직하게 스트립캐스팅법에 의해서 용탕을 급랭 및 응고하는 단계를 포함한다.\n\n본 발명의 바람직한 또 다른 실시예에 따른 나노컴포지트 자석 분말을 제조하는 방법은 바람직하게는 그 조성식이 (Fe1-mTm)100-x-y-z-w-n(B1-p Cp)xRyTizVwMn로 표현되고, 여기서 T는 Co 및 Ni로 구성된 군에서 선택되는 적어도 1종의 원소이며, R은 희토류 원소이며, M은 Al, Si, Cr, Mn, Cu, Zn, Ga, Nb, Zr, Mo, Ag, Ta 및 W로 구성된 군에서 선택되는 적어도 1종의 원소이며, 조성비율 x, y, z, w, n, m 및 p는 각각, 10원자％<x≤15원자％, 4원자％≤y<7원자％, 0.5원자％≤z≤8원자％, 0.01원자％≤w≤6원자％, 0원자％≤n≤10원자％, 0원자％≤m≤0.5원자％및 0.01원자％≤p≤0.5원자％의 부등식을 만족하는 급랭응고합금을 준비하는 단계를 포함한다. 이 방법은 바람직하게는 R2Fe14B형 결정구조의 경질 페라이트상과 연질 페라이트상을 갖는 나노컴포지트 자석 합금을 얻기 위해서 급랭응고합금을 열적으로 처리하는 단계와, 이 나노컴포지트 자석 합금을 분쇄하는 단계를 더 포함한다.\n\n본 발명의 바람직한 또 다른 실시예에 따른 나노컴포지트 자석을 제조하는 방법은 바람직하게는 그 조성식이(Fe1-mTm)100-x-y-z-w-n(B1-pCp)xRyTizVwMn로 표현되고, 여기서 T는 Co 및 Ni로 구성된 군에서 선택되는 적어도 1종의 원소이며, R은 희토류 원소이며, M은 Al, Si, Cr, Mn, Cu, Zn, Ga, Nb, Zr, Mo, Ag, Ta 및 W로 구성된 군에서 선택되는 적어도 1종의 원소이며, 조성비율 x, y, z, w, n, m 및 p는 각각, 10원자％<x≤15원자％, 4원자％≤y<7원자％, 0.5원자％≤z≤8원자％, 0.01원자％≤w≤6원자％, 0원자％≤n≤10원자％, 0원자％≤m≤0.5원자％ 및0.01원자％≤p≤0.5원자％의 부등식을 만족하는 나노컴포지트 자석 분말을 준비하는 단계를 포함한다. 이 나노컴포지트 자석 분말은 바람직하게는 R2Fe14B형 결정 구조의 경질 페라이트상과 연질 페라이트상을 갖는다.\n\n나노\n\n컴포지트 자석 분말의 보자력과 최대 에너지적(積) 중 적어도 하나는 V를 함유하지 않는 자석의 그것보다 적어도 1％ 이상인 것이 바람직하다.\n\n이 방법은 바람직하게는 나노컴포지트 자석을 얻기 위해서 나노컴포지트 자석분말을 압축하는 단계를 더 포함한다.\n\n본 발명의 다른 태양, 구성요소, 공정, 단계, 특징 및 장점은 첨부 도면을 참고로 한 이하의 바람직한 실시예의상세한 설명을 통해서 보다 분명해질 것이다.\n\n실 시 예\n\n본 발명은 희토류 원소를 약 4원자％ 내지 약 7원자％, 붕소 및 탄소를 약 10원자％ 내지 15원자％ 함유하는 합금에 Ti 및 V를 조성하여 첨가시킬 때 나노컴포지트 자석이 감자곡선에 양호한 각형비(loop squareness)를 나타낸다는 것을 기본 아이디어로 한다.\n\n일본 특허 공개 공보 제 2002-285301 호 및 일본 특허 공보 제 3297676 호에는 많은 첨가제 원소들이 개시되어 있으나 Ti 및 V를 조성하여 첨가함으로써 현저한 효과가 달성된다는 것은전혀 개시하고 있지 않다.\n\n본 출원인이 일본 특허 공개 공보 제 2002-175908 호에 이미 개시한 바와 같이, 첨가제 Ti는 합금용탕이 급랭응고되는 동안 α­ Fe의 생성 및 성장을 최소화한다.\n\n따라서 Ti를 첨가함으로써 결정구조가 R2Fe14B형인 경질페라이트상을 약 50 체적％ 함유하고 연질 페라이트상이 상기 경질 페라이트상의 결정 입계면에 분산 또는 얇게분포되어 있는 구조를 얻을 수 있다.\n\n본 발명자들은 첨가제 Ti가 이러한 바람직한 효과를 가지지만, 희토류 원소의 조성비율이 감소되고 일본 공개공보 제 2002-175908 호에 개시된 나노컴포지트 자석의 자화를 더 향상시키지만 자기특성은 오히려 열화시킨다는 것을 알아냈다.\n\n결정구조가 R2Fe14B형인 경질 페라이트상과 α­ Fe 및 철계 붕화물과 같은 연질 페라이트상이 동일 금속 구조에 혼재하고 상호작용교환을 통해 자기적으로 결합되는 나노컴포지트 자석의 자화를 증가시키기 위해서 희토류 원소의 조성비율을 감소시켜 α­ Fe 상의 체적％를 증가시키는 것이 효과적이라는 것이 일반적이다.\n\n이는 α­ Fe의 포화자화가 R2Fe14B형 결정구조의 경질 페라이트상의 포화자화보다 양호하기 때문이다.\n\n그러나 본 발명자들은 Ti와 함께 조성된 희토류 원소의 조성비율이 약 7원자％ 이하로 감소되고, 보자력(Hcj)이400㎄/m 이상이 되지 않으면, 감자곡선은 각형비를 가질 수 없고 첨가제 Ti를 많이 첨가하지 않으면 자기특성이양호해지지 않는다는 것을 알아냈다.\n\n그럼에도 불구하고, 첨가제 Ti를 단순히 많이 첨가하여 이러한 문제를 해결하고자 하면, 비자성 Ti-B 화합물이 생성될 것이고 오히려 자기특성을 열화시키게 된다.\n\n따라서 본 발명자들은 Ti와 또 다른 금속 원소를 다양하게 조성하여 희토류 원소의 조성비율을 약 7원자％ 이하로 적게 하고 붕소의 조성비율을 증가시킨 화합물에 첨가하는 실험을 수행하였고, 결과적으로 Ti 및 V를 조성하여 첨가할 때, 철계 붕화물과 α­ Fe의 체적％가 증가된 나노컴포지트 자석을 스트립캐스팅법에 의해서 상당히생산할 수 있었다.\n\n본 발명의 바람직한 실시예에 따른 나노컴포지트 자석은 바람직하게는 그 조성식이 (Fe1-mTm)100-x-y-z-w-n(B1-pCp)xRyTizVwMn로 표현되고, 여기서 T는 Co 및 Ni로 구성된 군에서 선택되는 적어도 1종의 원소이며, R은 희토류 원소이며, M은 Al, Si, Cr, Mn, Cu, Zn, Ga, Nb, Zr, Mo, Ag, Ta 및 W로 구성된 군에서 선택되는 적어도 1종의 원소이며, 조성비율 x, y, z, w, n, m 및 p는 각각, 10원자％<x≤15원자％, 4원자％≤y<7원자％, 0.5원자％≤z≤8원자％, 0.01원자％≤w≤6원자％, 0원자％≤n≤10원자％, 0원자％≤m≤0.5원자％ 및 0.01원자％≤p≤0.5원자％의 부등식을 바람직하게 만족한다.\n\n이 나노컴포지트 자석은 R2Fe14B형 결정 구조의 경질 페라이트상과 연질 페라이트상을 갖는 것이 바람직하다.\n\n본 발명의 바람직한 다른 실시예에 있어서, 나노컴포지트 자석은 바람직하게 Ti 및 V를 첨가함으로써 나노컴포지트 자석의 보자력과 최대 에너지적 중 적어도 하나는 V를 함유하지 않는 자석의 그것보다 적어도 1％ 이상인것이 바람직하다.\n\n나노컴포지트 자석은 바람직하게 Ti 및 V를 첨가함으로써 결정구조가 R2Fe14B형인 경질 페라이트상을 적어도 약 40체적% 포함한다.\n\n생성된 결정구조가 R2Fe14B형인 경질 페라이트상은 약 10㎚ 내지 약 200㎚의 평균 입경을 가지는 것이 바람직하며, 연질 페라이트상은 바람직하게 약 1㎚ 내지 약 100㎚의 평균 입경을갖는다.\n\n본 발명의 바람직한 실시예에 있어서, Fe, B, C, R(Y를 포함하는 희토류 원소중 적어도 1종)을 함유하고, Ti와V를 필수원소로 하는 철계 합금 용탕이 바람직하게 감압 분위기에서 스트립캐스팅법과 같은 액체급랭법에 의해서 급랭되어 미세결정인 R2Fe14B형 화합물상과 같은 급랭응고합금을 생산한다.\n\n급랭응고합금은 경우에 따라서\n\n열처리되어 급속응고합금내 잔류하는 아모퍼스부를 결정화할 수도 있다.\n\n스트립캐스팅법은 합금 용탕을 냉각 롤러 표면과 접촉시켜 용탕을 급랭 응고함으로써 박판형 급랭응고합금을 생산하는 기술이다.\n\n본 발명의 바람직한 실시예에 있어서 종전의 스트립캐스팅법에 사용된 냉각롤러보다 더 빨리회전시켜 용탕을 급랭 응고시킨다.\n\n합금 용탕이 노즐 오리피스를 통해 냉각롤러 표면에 분사되는 멜트스피닝법(melt spinning process)에 비해 스트립캐스팅법은 결과적으로 냉각율이 더 낮다.\n\n그러나 스트립캐스팅법에 의\n\n하면 폭과 두께가 비교적 큰 박판형 급랭응고합금이 생산되기 때문에 대량 생산을 가능하게 한다.\n\n경우에 따라\n\n서, 본 발명의 바람직한 실시예에 따른 나노컴포지트 자석은 용탕이 노즐을 통해 냉각 롤러의 표면에 분사되는종래의 멜트스피닝법을 사용하여 제조될 수도 있다.\n\n본 발명의 바람직한 실시예에 따르면, α­ Fe의 핵 생성 및 성장을 방해하는 기능을 하는 Ti가 첨가되고, 또한희토류 원소가 적게 첨가되고, V 또한 첨가될 때, 자성이 큰 α­ Fe 및 철계 붕화물이 적당량 함유된 나노콤포지트 자석 구조체가 얻어진다.\n\n첨가된 Ti 및 V의 작용에 의해, 용탕 합금의 냉각율이 감소될 때조차형 화합물상 및 α­ Fe 상이 적당량 생성될 것이다.\n\nR2Fe14B\n\n따라서, R2 Fe14B형 화합물상이 약 10㎚ 내지 약 200㎚의평균결정입경을 가지며, 연질 페라이트상(예컨데, α­ Fe)이 약 1㎚ 내지 약 100㎚의 평균결정입경을 가지며,열처리 후 조차 미세하게 분산되어 자기특성이 우수한 나노컴포지트 자석이 얻어질 수 있다.\n\nR2Fe14B형 화합물상 및 α­ Fe상으로 실질적으로 이루어진 종래의 나노컴포지트 자석은 α­ Fe를 약 5체적％내지 약 50체적％ 함유할 때 양호한 포화자화를 가지기 때문에 자성이 양호하지만, 본 발명의 여러 바람직한 실시예에 따른 나노컴포지트 자석보다 붕소를 더 적게 가진다.\n\n따라서 종래의 나노컴포지트 자석을 냉각율이 낮은 스트립캐스팅법에 의해 생산하는 경우, 결정입경은 과도하게 증가되며 자기특성도 상당히 열화된다.\n\n이와\n\n달리, 본 발명의 바람직한 실시예 중 어느 하나에 따른 나노컴포지트 자석의 재료 합금은 붕소를 10 원자% 넘게함유하며 우수한 성능을 갖는 나노컴포지트 자석을 스트립캐스팅법에 의해서 양산할 수 있다.\n\n본 발명의 바람직한 실시예에 있어서, 희토류 원소가 적게 첨가되고 Ti 및 V를 조성하여 첨가하면, 결정구조가R2Fe14B형인 경질 페라이트상이 가능한 다량 함유되고 자성이 우수한 연질 페라이트상이 과도하게 성장하지 않고비교적 다량 함유된다.\n\n결과적으로, 감자곡선은 양호한 각형비를 가질 수 있다.\n\n또한, 첨가제 Ti 및 V가 급랭\n\n응고합금 중의 B-리치(B-rich) 비자성 아모퍼스상으로부터 붕화물상(예컨대 강자성 철계 붕화물)을 생산할 수있고 열처리 및 결정화 합금 중에 잔류하는 비자성 아모퍼스상의 체적%가 감소하기 때문에 자성이 증가될 수 있다.\n\n본 발명의 바람직한 실시예에 있어서, 합금 조성, 합금 냉각율 및 열처리 온도 등의 다양한 처리 조건을 적절히조절함으로써 R2Fe14B형 화합물상의 포화자화 이상으로 양호한 포화자화를 갖는 철계 붕화물 및 α­ Fe를 생산할 수 있다.\n\n연질 페라이트상의 예로는 철계 붕화물 및 α­ Fe(약 2.1T의 포화 자성을 가짐) 및1.6T의 포화 자성을 가짐)을 들 수 있다.\n\n이 경우에, R2Fe\n\n14B형\n\nFe23B6(약\n\n화합물상은 R이 Nd인 경우에 약 1.6T의 포화자화를 가진다.\n\n본 명세서에 있어서, \"아모퍼스상(amorphous phase)\"은 원자배열이 상당히 불규칙한 경우뿐만 아니라 결정화를위한 핵, 극미세 영역(크기 : 수 나노미터 이하), 및/또는 원자 클러스터가 있는 경우를 의미한다.\n\n보다 상세\n\n하게는,\"아모퍼스상\"은 X-선 회절 분석(X-ray diffraction analysis) 또는 TEM 관측에 의해서 정의될 수 없는결정 구조를 갖는 임의 상을 말한다.\n\n달리 말해서, X-선 회절 분석(X-ray diffraction analysis) 또는 TEM 관측에 의해서 명백히 구별될 수 있는 결정 구조를 갖는 상을 본 명세서에 있어서 \"결정상(crystalline phase)\"이라 말할 것이다.\n\n본 발명자는 Ti 및 V가 함께 첨가될 때만, 자성이 Ti 및 Cr 또는 Ti 및 Zr이 함께 첨가되는 경우와 달리 자성이감소되지 않는다는 것을 실험을 통해 확인하였다.\n\n또한, 감자곡선은 특히 양호한 각형비를 나타냈다.\n\n이러한\n\n결과에 기초하여, 본 발명자는 첨가제 Ti 및 V가 자성이 안 좋은 붕화물의 석출을 최소화하는데 중요한 역할을한다는 것을 알아냈다.\n\nTi 및 Nb를 조성하여 첨가할 때, 자성은 감소하지 않으나 보자력이 상당히 감소한다는 것을 주목하여야 한다.\n\n이와 같이, Ti 및 V가 첨가될 때만, 희토류 원소를 4원자％ 내지 7원자％, 붕소를 10원자％ 내지 15원자％ 범위로 함유하는 자기특성이 우수한 나노컴포지트 자석이 얻어질 수 있다.\n\n본 발명의 다양한 실시예에 있어서, 재료 합금은 다량의 붕소를 함유할 뿐만 아니라 또한 필수원소 중의 하나로탄소를 함유한다.\n\n-6\n\n따라서 이러한 재료 합금의 용탕은 약 5×10 ㎡/s 이하의 운동역학적 점성을 가질 수 있으며용탕과 냉각롤러 사이의 접촉 정도를 상당히 증가시키기에 충분할 만큼 평활하게 유동할 수 있다.\n\n결과적으로,\n\n용탕이 냉각롤러 상에서 훨씬 더 효과적으로 냉각될 수 있으므로 냉각 롤러가 저속으로 회전할 때조차 양호한나노컴포지트 자석을 얻을 수 있다.\n\n결과적으로, 본 발명의 바람직한 실시예에 있어서, 노즐 오리피스를 통한 용탕의 유속(flow rate)을 제어하지않고 용탕을 냉각롤러 상에 슈트(예컨데, 가이드 부재)를 통해 직접 공급하는 스트립캐스팅법이 채용될 수있다.\n\n따라서 이 방법은 노즐 오리피스를 통해서 유속을 제어하는 종래의 멜트스피닝법 보다 훨씬 더 생산성이좋고 비용이 저렴한 개선된 방법이다.\n\n스트립캐스팅법에서조차 수행될 수 있는 냉각율 범위에서 R-Fe-B 계 희토류 합금의 용탕을 비결정화하기 위해서, 일반적으로 약 10원자％ 이상의 붕소를 첨가할 필요가 있다.\n\n그러나\n\n붕소를 너무 많이 첨가하면, 급랭응고합금이 열처리 및 결정화된 후조차 처리된 합금의 마이크로구조내에 고 조성비율의 붕소가 잔류하기 때문에 비자성 아모퍼스상이 된다.\n\n없다.\n\n다시 말해 균일한 마이크로 결정구조를 얻을 수결과적으로, 강자성상의 체적％가 감소되고 자성이 나빠진다.\n\n그러나, Ti 및 V가 본 발명의 바람직한실시예와 같이 첨가되면, 바람직한 상기 현상 등이 관측되므로, 포화자화가 양호한 철계 붕화물이 생성되고 자성이 상당히 증가된다.\n\n바람직한 조성\n\nB 및 C의 총 조성비율(x)가 약 10원자％ 이하이면, 냉각율이 약 10 ℃/s 내지 약 10 ℃/s일 때 R2Fe14B형 결정상2\n\n5\n\n과 아모퍼스상이 혼재하는 소정의 급랭응고합금을 생산하기 어렵고, 합금이 사후에 열처리되는 경우조차, 얻어진 보자력이 그다지 좋지 않을 것이다.\n\n또한, 조성비율(x)이 약 10원자％ 이하인 경우에는, 포화자화가 양호한철계 붕화물이 더 이상 생성되지 않는다.\n\n이러한 이유에서, 조성비율(x)이 약 10원자％ 이상이어야 한다.\n\n한\n\n편, B 및 C의 총 조성비율(x)이 약 15원자％를 초과하면, 합금을 열처리 및 결정화한 경우에도 잔류하여 아모퍼스상의 체적％가 증가한다.\n\n적으로 감소한다.\n\n또한, 가장 포화자화가 좋은 α­Fe상의 조성비율이 감소되고 잔류자기(Br)도 결과이러한 점을 고려할 때, B 및 C의 총 조성비율(x)은 약 10원자％ 이상 약 15원자％ 이하인것이 바람직하며, 더 바람직하게는 약 11원자％ 이상 약 14원자％ 이하이다.\n\nB 및 C의 합계에 대한 C의 비율(p)은, 원자비로 약 0.01 이상 약 0.5 이하의 범위에 있는 것이 바람직하다.\n\n의 첨가효과를 얻기 위해서는, C의 비율(p)이 약 0.01 이상인 것이 바람직하다.\n\n작으면, C첨가의 효과가 거의 얻어지지 않는다.\n\n왜냐하면, p가 0.01 보다 너무\n\n한편 p가 약 0.5 보다 크게 되면, 결정입경이 과도하게 큰 α­ Fe상의 생성량이 증대되어 자기특성이 열화되는 문제가 생긴다.\n\n하고, p의 상한은 약 0.25인 것이 바람직하다.\n\nC\n\n비율(p)의 하한은, 약 0.02인 것이 바람직비율(p)은 약 0.05 이상 약 0.15 이하인 것이 더욱 바람직하다.\n\nR은 희토류 원소(예를 들어 Y)로부터 선택된 적어도 하나의 원소이며, 바람직하게는 실질적으로 La 또는 Ce를함유하지 않는다.\n\nLa 또는 Ce가 존재하면, R2Fe14B상에 존재하는 R(보통 Nd)이 La 또는 Ce로 치환되어 보자력및 감자곡선의 각형비가 열화되기 때문에, La 및 Ce를 실질적으로 포함하지 않는 것이 바람직하다.\n\n단 미량의\n\nLa 나 Ce(약 0.5원자％ 이하)가 불가피하게 혼입되는 불순물로서 존재하는 경우에는, 자기특성상 문제는 없다.\n\n따라서 약 0.5원자％ 이하의 La나 Ce를 함유하는 경우는, \"La(Ce)를 실질적으로 포함하지 않는\" 경우 또는\"La(Ce)를 실질적으로 무시할 수 있는\"경우를 의미한다.\n\n보다 상세하게는 R은 Pr 또는 Nd를 필수원소로 포함하고, 그 필수원소의 일부를 Dy 및/또는 Tb로 치환하여도 좋다.\n\nR의 조성비율(y)이 전체의 약 4원자％ 미만으로 되면, 경자기 특성의 발현에 기여하는 R2Fe14B형 결정구조를 가지는 화합물상이 충분히 생성되지 않고, 소망 보자력(Hcj)를 얻는 것이 불가능하게 된다.\n\n한편, R의 조성\n\n비율(y)이 약 7원자％ 이상으로 되면, 아모퍼스 형성능력이 감소하고 연자성을 갖는 α­ Fe상 및 Fe-B상의 존재량이 저하됨으로써 자성이 저하된다.\n\n따라서 희토류 원소(R)의 조성비율(y)은 약 4원자％ 이상 약 7원자％미만의 범위, 보다 바람직하게는 약 5원자％ 이상 약 6원자％ 이하로 조절하는 것이 바람직하다.\n\n첨가제 Ti는 용융 합금이 급랭 응고하는 동안 연질 페라이트상보다 빨리 경질 페라이트상을 핵생성 및 성장시키는데 기여하고, 또한, 보자력(Hcj) 및 잔류자속밀도(Br)의 향상 및 감자곡선의 각형비의 개선에 기여하고, 최대에너지적(BH)max을 향상시킨다.\n\nTi의 조성비율(z)이 전체의 약 0.5원자％ 미만으로 되면, Ti첨가의 효과가 충분히 발현되지 않는다.\n\n한편 Ti의\n\n조성비율(z)이 전체의 약 8원자％를 초과하면 결정화 열처리 후에도 잔존하는 아모퍼스상의 체적비율이 증가하기 때문에, 잔류자속밀도(Br)의 저하를 초래하기 쉽다.\n\n이런 점에서, Ti의 조성비율(z)은 약 0.5원자％ 이상약 8원자％ 이하의 범위로 하는 것이 바람직하고, 바람직한 z의 범위의 하한은 약 1.0원자%이고, 보다 바람직한z의 범위의 상한은 약 6원자％이다.\n\n더욱 바람직한 z의 범위의 상한은 약 5원자％이다.\n\n또한 C 및 B로 구성되는 총 조성비율(x)이 높을수록, 붕소를 과잉으로 포함하는 아모퍼스상이 형성되기 쉽기 때문에, Ti의 조성비율(z)을 높게 하는 것이 바람직하다.\n\n계에 농축된다.\n\nTi는 B에 대한 친화성이 강하고, 경질 페라이트상의 입그러나 B의 조성비율(x)에 대한 Ti의 조성비율(z)이 너무 높으면, Ti는 입계에 없고, R2Fe14B화합물 중에 들어가 자화를 저하시킬 가능성이 있다.\n\n퍼스상이 많이 생성된다.\n\n또한 B에 대한 Ti의 비율(z/x)이 너무 낮으면 B-리치 아모실험에 의하면, 0.05≤z/x≤0.4를 만족시키도록 조성비율을 조절하는 것이 바람직하고, 0.1≤z/x ≤ 0.35를 만족시키는 것이 더욱 바람직하다.\n\n더욱 바람직하게는 0.13≤z/x≤0.3이다.\n\n다른 첨가제 V는 우수한 자기특성을 달성하도록 첨가되는 Ti량을 감소시킬 수 있어서 Ti-B 화합물의 생성을 최소화하고, 자성을 증가시킬 수 있으며 용탕의 점성도 감소시킬 수 있다.\n\n결과적으로, 재료 합금이 스트립캐스\n\n팅법에 의해 훨씬 쉽게 급랭 응고될 수 있다.\n\nV의 조성비율(w)이 약 0.01 원자％ 미만이면, V 첨가의 효과가 충분히 발현되지 않는다.\n\n한편 V의 조성비율\n\n(w)이 전체의 6원자％를 초과하면 V-Fe-B계 화합물의 핵이 생성될 것이므로, 자기특성의 열화가 될 수 있다.\n\n이런 점에서, V의 조성비율(w)이 약 0.01원자％ 이상 약 6원자％ 이하의 범위로 하는 것이 바람직하고, 더 바람직하게는 약 0.1원자％ 이상 약 4원자％ 이하의 범위로 하는 것이고, 약 0.5원자％ 이상 약 2원자％ 이하의 범위로 하는 것이 더 바람직하다.\n\n여러 소망하는 효과 및 장점을 얻기 위해서, 금속 원소(M)를 첨가할 수도 있는데, 이는 Al, Si, Cr, Mn, Cu,Zn, Ga, Nb, Zr, Mo, Ag, Ta 및 W로 구성되는 군에서 선택되는 적어도 1종의 원소를 소량 포함하여도 좋다.\n\n실\n\n험에 의해서 이들 금속 원소(M)의 조성비율(n)이 약 10원자％를 초과하지 않는다면 첨가제 Ti 및 V에 의해서 달성될 수 있는 효과가 크게 저하되지 않는다는 것을 확인했다.\n\n원소 B, C, R, Ti, V 및 M 외에, 재료 합금의 잔류물은 Fe 만일 수도 있지만, Co 및 Ni로 구성된 군으로부터 선택된 적어도 1종의 전이금속원소 T로 Fe 부분을 치환하는 것도 좋은데 이 경우 소망하는 경자기특성이 얻어질수 있다.\n\n그러나 Fe에 대한 치환물 T의 원자수 비(m)가 약 0.5를 초과하면, 약 0.7T 이상의 높은 잔류자속밀도(Br)가 얻어질 수 없다.\n\n이런 점에서, 원자수 비(m)는 약 0 내지 약 0.5가 바람직하다.\n\n또한, Fe 부분을 Co로\n\n치환함으로써 감자곡선의 각형비가 향상되고 R2Fe14B상의 큐리온도가 상승하기 때문에 온도특성이 개선된다.\n\nCo\n\n에 의한 Fe의 치환 원자수의 비(m)의 바람직한 범위는 약 0.005 이상 약 0.4 이하이다.\n\n여기서, 본 발명의 바람직한 실시예를 첨부 도면을 참고로 설명할 것이다.\n\n본 발명의 바람직한 제 1 실시예에 있어서, 급랭응고합금은 바람직하게는 도 1에 도시된 스트립 캐스터(stripcaster)를 사용하여 준비된다.\n\n이 합금 준비 과정은 산화가 잘되는 희토류 원소 R 및 Fe가 산화 방지되도록 불활성기체 분위기하에서 수행되는 것이 바람직하다.\n\n또는 다른 적합한 기체일 수도 있다.\n\n이 불활성기체는 예컨대 헬륨, 아르곤의 단원자기체, 질소헬륨 또는 아르곤의 단원자기체가 질소 기체에 비해 바람직한데 이는 질소는 비교적 쉽게 희토류 원소 R과 반응하기 때문이다.\n\n도 1에 도시된 스트립 캐스터는 감압 불활성기체 분위기의 챔버(도시안함)에 배치되어 있다.\n\n도 1에 도시된 바\n\n와 같이, 스트립 캐스터는 용해로(11), 냉각롤러(13) 및 슈트(즉, 안내부재; 14)를 구비하는 것이 바람직하다.\n\n먼저, 재료 합금이 용해로(11)안에서 용융되고, 다음에 용탕(12)이 용해로(11)로부터 인출되고 슈트(14)에 의해냉각롤러(13) 표면상으로 안내되어 냉각롤러(13) 상에서 급랭 응고된다.\n\n용해로(11)는 재료 합금을 용해하여 얻어진 용탕(12)을 슈트(14)상에 거의 일정한 비율로 공급하도록 배열되는것이 바람직하다.\n\n이 공급 비율은 용해로(11)를 예컨대 일정각도로 기울여 줌으로써 임의로 제어가능하다.\n\n냉각롤러(13)의 외주면은 열전도도가 우수한 재료(예컨대, 구리)로 제조되는 것이 바람직하다.\n\n30㎝ 내지 약 100㎝의 직경과 약 15㎝ 내지 약 100㎝의 폭을 갖는 것이 바람직하다.\n\n안함)에 의해서 예정 속도로 회전될 수 있다.\n\n로 조정가능하다.\n\n3\n\n롤러(13)는 약\n\n이 롤러(13)는 모터(도시\n\n이 회전 속도를 제어함으로써, 냉각롤러(13)의 표면속도는 임의스트립 캐스터에 의해 달성되는 냉각율은 예컨대 냉각롤러(13)의 회전 속도를 적절히 선택함5\n\n으로써 10 ℃/s 내지 10 ℃/s 범위 내에서 제어가능하다.\n\n용탕(12)이 안내되는 슈트(14)의 표면은 수평면에 대해서 틸팅각(β)을 이룬다.\n\n(13)의 표면 사이의 거리는 바람직하게는 약 수 ㎜ 범위 내이다.\n\n슈트(14)의 선단부와 냉각롤러\n\n또한, 슈트(14)는 그 선단부의 냉각롤러(13)의 중심에 대한 교차선이 수직면에 대해서 각도(α; 0°≤α≤90°)를 이룬다.\n\n틸팅각(β)은 10°≤β≤55°를\n\n만족하는 것이 바람직하다.\n\n한편, 슈트(14)의 틸팅각(β)은 1°≤β≤80°을 만족하는 것이 바람직하며 더 바람직하게는 5 °≤β≤60°를만족한다.\n\n용탕(12)이 슈트(14)상에 부어진 후, 슈트(14)의 선단부로부터 냉각롤러(13)의 표면상으로 용탕 공급됨으로써냉각롤러(13)상에 용탕 퍼들(melt puddle)이 형성된다.\n\n슈트(14)는 용해로(11)로부터 소정의 유속으로 연속적으로 이송되는 용탕(12)의 유동 방향을 일시적으로 바꾸는 정도까지 용탕(12)의 유속을 감소시킴으로써 용탕(12)의 유동을 정류할 수 있다.\n\n이 정류효과는 슈트(14)상에 부어진 용탕(12)의 표면 유동을 선택적으로 막는댐 판(dam plate)에 의해서 더 향상될 수 있다.\n\n이 슈트(14)를 사용함으로써, 용탕(12)이 냉각롤러(13)의 길이방향(longitudinal direction)으로 실질적으로 일정한 폭을 갖도록 공급될 수 있다.\n\n본 명세서에 있어서, 냉각\n\n롤러(13)의 \"길이방향\"은 롤러(13)의 축방향과 동일하다(즉, 저면으로부터 나오는 방향).\n\n(12)은 실질적으로 균일한 두께를 갖도록 펼쳐질 수 있다.\n\n써, 용탕 유속이 미세하게 제어가능하다.\n\n유동한다.\n\n또한, 공급된 용탕\n\n슈트(14)의 용탕 안내면의 틸팅각(β)을 조정함으로자중으로 인해 용탕(12)은 슈트(14)의 경사 안내면상에서 하방으로따라서 용탕(12)은 수평방향(즉, X-축)에 실질적으로 평행한 동역학적 운동량을 가진다.\n\n다시 말해\n\n서, 슈트(14)의 틸팅각(β)이 커지면, 용탕(12)의 유속도 커지고 그 운동량도 더 커진다.\n\n또한, 슈트(14)는 냉각롤러(13)에 막 도달한 용탕(12)의 온도를 조정할 수 있다.\n\n도는 액체일 때의 온도보다 약 100℃ 이상 더 높은 것이 바람직하다.\n\n슈트(14)상의 용탕(12)의 온\n\n용탕(12)의 온도가 너무 낮으면, 생성된급랭응고합금의 특성에 영향을 미치는 TiB2의 초기 결정이 급랭응고합금 중에 잔류하고 국부적으로 핵 생성될 수도 있다.\n\n또한, 용탕(12)의 온도가 너무 낮으면, 점성이 커져 훨씬 더 오염이 쉽게 될 수 있다.\n\n슈트(14)상의\n\n용탕 온도는 용해로(11)로부터 슈트(14)를 향해 공급되는 용탕의 온도 또는 슈트(14)의 열용량을 조정함으로써제어가능하다.\n\n경우에 따라서, 슈트 히터(도시안함)가 이 목적으로 특히 제공될 수도 있다.\n\n본 발명의 바람직한 실시예에 있어서, 슈트(14)는 냉각롤러(13)의 축방향으로 일정 간격씩 이격되고 그 선단부가 냉각롤러(13)의 외주면에 대면하는 복수개의 배출로를 구비한다.\n\n이들 배출로의 각각의 폭(각각의 용탕 유동폭에 대응함)은 약 0.5㎝ 내지 약 10.0㎝인 것이 바람직하며, 약 0.7㎝ 내지 약 4.0㎝인 것이 더 바람직하다.\n\n바람직한 실시예에 있어서, 각각의 용탕 유동폭은 약 1㎝로 배출로의 폭과 같다.\n\n각각의 용탕 유동폭은 해당\n\n배출로로부터 멀리 이동할수록 횡방향으로 증가하는 경향이 있다는 것을 주목하여야 한다.\n\n많은 배출로가 슈트\n\n(14)상에 제공되어 바람직한 실시예에 있어서와 같이 다수의 용탕 유동을 형성하며, 각각의 인접한 인접 쌍의용탕 유동이 서로 접촉되어서는 안 된다.\n\n용탕(12)이 슈트(14)상에 부어진 후, 용탕(12)이 복수개의 용탕 유동으로 분리되어 각각의 용탕 유동폭이 냉각롤러(13)의 축방향에 있어서 해당 배출로의 폭과 실질적으로 같아진다.\n\n(13)와 접촉된다.\n\n그 후 냉각롤러(13)상에 공급된 각각의 용탕 유동(12)이 일정한 폭으로 롤러(13)가 회전할때 롤러(13)의 외주면상에서 상방으로 이동한다.\n\n급랭된다.\n\n이 때, 각각의 용탕 유동이 냉각롤러이와 같이, 용탕 유동(12)은 롤러(13)를 따라 이동하는 동안용탕이 누출되는 것을 방지하기 위해서 슈트(14)의 선단부와 냉각롤러(13) 사이의 거리는 약 3㎜인미만이 바람직하며, 더 바람직하게는 약 0.4㎜ 내지 약 0.7㎜ 범위이다.\n\n각각의 인접 쌍의 배출로 사이의 간격은 약 10㎝이다.\n\n의 외주면과 접촉될 수 있다.\n\n다.\n\n이렇게 용탕(12)은 상호 이격된 위치에서 냉각롤러(13)그 때, 해당 배출로를 통해 공급된 각각의 용탕 유동은 효과적으로 냉각될 수 있결과적으로, 용탕(12)이 슈트(14)상에 빠르게 부어질 때조차, 소망 냉각율이 얻어진다.\n\n상기 슈트(14)는 상술한 구성을 가져야만 하지는 않다는 것에 주목하여야 한다.\n\n이와 달리, 슈트(14)가 단지\n\n하나의 배출로를 가질 수도 있고 또한 각각의 용탕 유동폭이 증가되게 공급될 수도 있다.\n\n또 다른 변형예에 있\n\n어서, 개구된 관 또한 슈트(14)의 선단부(또는 바닥)에 제공되어 용탕(12)이 개구된 관을 통해서 냉각 롤러(13)의 표면상에 공급될 수도 있다.\n\n슈트(14)의 다른 변형예가 가능할 수도 있다.\n\n용탕(12)이 회전 냉각롤러(13)의 외주면상에서 급랭 응고된 후, 급랭 응고 합금이 냉각롤러(13)로부터 박판형응고 합금(15)이 된다.\n\n본 발명의 바람직한 실시예에 있어서, 해당 배출로를 통해 공급된 각각의 용탕 유동이소정 폭의 박판으로 응고되고 응고 합금(15)이 분쇄되어 수집기(도시안함)에 의해서 모아진다.\n\n상술한 바와 같이, 스트립캐스팅법은 멜트스피닝법과 달리 어떤 노즐도 사용하지 않는다.\n\n캐스팅법은 멜트스피닝법과 관련된 여러 문제점들을 가지지 않는다.\n\n다시 말해서, 스트립\n\n특히, 스트립캐스팅법은 노즐이 필요 없어서 용탕 공급율이 노즐의 직경 및 용탕이 예기치 않게 노즐에서 응고된 경우 발생되는 노즐 막힘 문제에 의해서제한되지 않는다.\n\n따라서 스트립캐스팅법은 양산에 효과적이다.\n\n니즘이 요구되지 않는다.\n\n또한, 노즐 가열 장비나 용탕 수압 제어 메카결과적으로, 초기 설비 비용 및 설비 작동 비용이 상당히 감소될 수 있다.\n\n또한, 멜트스피닝법에 있어서, 노즐이 재활용되지 않으므로 노즐 제작에 고비용이 들지만 한 번 사용한 후에는버려야만 했다.\n\n이와 달리, 스트립캐스팅법은 슈트의 반복 사용을 가능하게 하여 설비 작동 비용이 훨씬 더 저렴하게 되었다.\n\n또한, 스트립캐스팅법에 있어서, 냉각롤러는 저속으로 회전될 수 있고 용탕이 멜트스피닝법에 비해 빨리 공급될수 있어서 얻어진 박판형 급랭응고합금이 두껍게 될 수 있다.\n\n예를 들어 슈트(14)의 형상, 구성, 용탕 배출로의 폭과 개수 및 용탕 공급율을 적절히 결정함으로써, 생산된 박판형 급랭응고합금은 바람직한 범위내의 평균 두께와 폭을 가질 수 있다.\n\n약 80㎜의 폭을 가지는 것이 바람직하다.\n\n다.\n\n급속응고합금이 너무 얇으면, 그 겉보기 비중(tap density)이 너무 적어서 원하는 만큼의 급속응고합금을얻을 수 없다.\n\n반대로, 급속응고합금이 너무 두꺼우면, 합금이 용탕/롤러 접촉면 및 자유 표면(즉, 용탕 표면)상에서 다른 비율로 냉각될 수 있다.\n\n있다.\n\n박판형 급랭응고합금은 약 15㎜ 내지또한, 박판형 합금은 너무 얇거나 또는 너무 두꺼워서도 안 될 것이다시 말해서, 자유 표면 주위의 합금 부분은 불충분하게 냉각될 수도이런 점에서, 박판형 합금은 바람직하게는 약 50㎛ 내지 약 250㎛의 두께를 가지며 더 바람직하게는 약60㎛ 내지 약 200㎛의 두께를 가지며 더 바람직하게는 약 70㎛ 내지 약 90㎛의 두께를 가진다.\n\n석의 충전 밀도를 고려하면, 박판형 합금은 80㎛ 이상의 두께를 갖는 것이 바람직하다.\n\n또한, 본드 자\n\n이 경우에, 급랭 분위\n\n기는 약 10㎪ 내지 약 101.2㎪의 감압 분위기이다.\n\n선택적으로, 본 발명의 다른 바람직한 실시예에 따른 나노컴포지트 자석은 상술한 스트립캐스팅법 대신에 멜트스피닝법이나 분무법과 같은 액체냉각법에 의해서 생산될 수도 있다.\n\n열처리\n\n본 발명의 바람직한 실시예에 있어서는, 상기 급랭합금의 열처리를 아르곤 분위기 중에서 실행한다.\n\n바람직하\n\n게는 승온 속도를 약 5 ℃/s 내지 약 20 ℃/s로 하여, 약 550 ℃ 이상 약 850 ℃ 이하의 온도에서 약 30초 이상약 20분 이하의 시간동안 유지한 후, 실온까지 냉각한다.\n\n이러한 열처리에 의하여 아모퍼스상 중에 준안정상의미세결정이 석출, 성장되고, 나노컴포지트 조직 구조가 형성된다.\n\n그리고 열처리온도가 약 550 ℃를 하회하면, 열처리 후에도 아모퍼스상이 많이 잔재하고, 급랭조건에의해서는 보자력이 충분한 레벨에 이르지 않는 경우가 있다.\n\n또한 열처리 온도가 약 850 ℃를 초과하면, 각 구성상의 입자성장이 현저하고, 잔류자속밀도(Br)가 저하되며, 감자곡선의 각형비가 열화된다.\n\n이 때문에, 열처리\n\n온도는 약 550 ℃ 이상 약 850 ℃ 이하가 바람직하지만, 보다 바람직한 열처리 온도 범위는 약 570 ℃ 이상 약820 ℃ 이하이다.\n\n열처리 분위기는, 합금의 산화를 방지하기 위해서 불활성기체 분위기(예컨대 Ar, N2)가 바람직하다.\n\n약 0.1kPa\n\n이하의 진공 중에 열처리를 수행하여도 좋다.\n\n본 발명의 바람직한 실시예에 있어서, 경질 페라이트상의 결정 입계가 더 작은 예를 들면 α­ Fe, Fe3B 및Fe23B6 와 같은 연질 페라이트상이 존재하고 있어도, 연질 페라이트상과 경질 페라이트상이 교환상호작용에 의하여 자기적으로 결합하기 때문에, 우수한 자기특성이 발휘된다.\n\n열처리 후에 있어서의 Nd2Fe14B형 화합물상의 평균결정입경은, 단자구 결정입경인 약 300nm 이하로 될필요가 있고, 약 10nm 이상 약 200nm 이하, 더욱이 약 10nm 이상 약 150nm 이하인 것이 더욱 바람직하다.\n\n이것\n\n에 대하여, 강자성 철계 붕화물상이나 α­ Fe상의 평균결정입경이 약 100nm을 초과하면, 연질 페라이트상과 경질 페라이트상과의 사이에서 일어나는 교환상호작용이 약하고, 감자곡선의 각형비가 열화되기 때문에, (BH)max가저하되고 만다.\n\n보통, 이들 상들은 평균결정입경이 약 1nm를 하회하는 극미세 결정이 되기 어려우며 평균결정입경이 약 수 nm로 형성되기 때문에, 붕화물이나 α-Fe상 등의 연질 페라이트상의 평균결정입경이 약 1nm 이상100nm 이하, 바람직하게는 약 5nm 이상 약 50nm 이하, 더 바람직하게는 약 5nm 이상 약 30nm 이하인 것이 바람직하다.\n\n또한 상호교환 스프링 자석이 우수한 자기특성을 얻기 위해서는, Nd2Fe14B형 화합물상의 평균결정입경이 연질 페라이트상의 평균결정입경보다 큰 것이 바람직하다.\n\n그리고 열처리 전에 급랭응고합금의 박판을 거칠게 절단 또는 분쇄하여 두어도 좋다.\n\n열처리 후, 얻어진 자석\n\n을 미분쇄(微粉碎)하고, 자석분말(자분)을 제조하면, 그 자분에서 공지된 방법에 의하여 여러 가지 본드자석을제조할 수 있다.\n\n본드자석을 제조하는 경우, 철계 희토류합금자분은 에폭시 수지나 나이론 수지 바인더와 혼합되어 소망의 형상으로 성형된다.\n\n이 때, 나노컴포지트 자분에 다른 종류의 자분(예를 들면 Sm-Fe-N계 자분이나하드페라이드 자분)을 혼합하여도 좋다.\n\n본 발명의 바람직한 실시예에 따라 얻어진 본드자석을 이용하여 모터나 액츄에이터 등의 각종 회전장치를 제조하는 것이 가능하다.\n\n본 발명의 다른 바람직한 실시예에 따른 자석분말을 사출 성형 본드자석에 이용하는 경우, 평균입도가 약 200㎛이하가 되도록 분쇄하는 것이 바람직하고, 보다 바람직한 분말의 평균입경은 약 30㎛ 이상 약 150㎛ 이하이다.\n\n또한 압축 성형 본드자석에 이용하는 경우는, 입도가 약 300㎛ 이하가 되도록 분쇄하는 것이 바람직하고, 더욱바람직한 분말의 평균입경은 약 30㎛ 이상 약 250㎛ 이하이다.\n\n더욱 바람직하기로는, 입경분포에 2개의 피크를가지고, 평균입경이 약 50㎛ 이상 약 200㎛ 이하에 있다.\n\n실시예\n\n실시예 1\n\n다음 표 1에 도시된 시료 번호 1 내지 8 각각에 대해서, 99.5％ 이상의 순도를 갖는 각각의 재료 B, C, Fe, Co,Ti, V 및 Nd는 총 중량이 약 600g이 되게 무게 단 후 이 혼합물은 산화알루미늄 용해로에 공급한다.\n\n그 후, 이\n\n들 합금 재료는 약 70㎪의 아르곤(Ar) 분위기하에서 인덕션 가열법(induction heating method)에 의해서 합금용탕을 준비한다.\n\n한다.\n\n용탕의 온도가 약 1,500 ℃에 도달한 후, 용탕은 수냉 구리 몰드에 부어져 평판 합금을 형성그 후, 합금은 총 무게가 약 15g이 되게 달아져서 약 0.8㎜ 직경의 오리피스가 바닥에 형성된 수정 용해로에 공급된다.\n\n다음에, 합금은 약 1.33㎪ 내지 약 47.92㎪ 범위의 아르곤(Ar) 분위기하에서 인덕션 가열법(induction heating method)에 의해서 용해되어 합금 용탕이 준비된다. 용탕의 온도가 약 1,350 ℃에 도달한후, 용탕 표면은 Ar 가스로 가압되어 용탕을 오리피스 하방 약 0.7㎜에 배치된 냉각롤러의 외주면상으로 오리피스를 통해 실온 Ar 분위기하에서 사출한다.\n\n냉각 롤러는 표면 속도가 대략 10㎧가 되도록 회전한다.\n\n이러한\n\n냉각롤러와 접촉에 의해서 용탕 합금은 급랭 응고된다.\n\n이와 같이, 약 2㎜\n\n내지 약 3㎜ 범위의 폭과 약 20㎛내지 50㎛의 두께를 갖는 급랭 응고 박판(리본)을 연속하여 얻는다.\n\n표 1\n\nNo.\n\nE\n\nX\n\nA\n\nM\n\nC\n\nO\n\nM\n\nP\n\n1\n\n2\n\n3\n\n4\n\n5\n\n6\n\n7\n\n8\n\nNd\n\n5.8\n\n5.8\n\n5.8\n\n5.8\n\n5.8\n\n5.8\n\n5.8\n\n5.8\n\nFe\n\n잔류물\n\n잔류물\n\n잔류물\n\n잔류물\n\n잔류물\n\n잔류물\n\n잔류물\n\n잔류물\n\nT\n\nCo4\n\n-\n\n합금 조성비(원자％)\n\nB\n\nC\n\nTi\n\n12\n\n1\n\n4\n\n12\n\n1\n\n4\n\n12\n\n1\n\n4\n\n12\n\n1\n\n4\n\n12\n\n0\n\n4\n\n12\n\n1\n\n4\n\n12\n\n1\n\n4\n\n12\n\n1\n\n4\n\nV\n\n1\n\n1.5\n\n2\n\n1.5\n\n0\n\n0\n\n0\n\n0\n\nM\n\n0\n\nNb1\n\nZr1\n\nCr1\n\n열처리 온도(\n\n℃)\n\n720\n\n700\n\n700\n\n700\n\n720\n\n740\n\n720\n\n740\n\n표 1에서, 시료 번호 1 내지 4는 본 발명의 바람직한 실시예를 나타내며, 시료 번호 5 내지 8은 비교예를 나타낸다.\n\n이 박판형 급랭응고합금은 Ar 분위기하에서 약 600 ℃ 내지 800 ℃ 범위의 온도로 가열되고 이 온도에서 약 6분내지 8분동안 열처리된 후 실온에서 냉각된다.\n\nmagnetometer; VSM)로 자기특성이 측정된다.\n\n결과는 다음 표 2에 도시되어 있다.\n\n표 2\n\n시료 번호\n\n응고 합금의 자기특성\n\nHCJ(㎄/m)\n\n(BH)rma(kJ/㎥)\n\nBr(T)\n\nE\n\nX\n\nA\n\nM\n\nC\n\nO\n\nM\n\nP\n\n그 후, 박판형 급랭응고합금은 진동식 자력계(vibrating sample1\n\n2\n\n3\n\n4\n\n5\n\n6\n\n7\n\n8\n\n0.93\n\n0.92\n\n0.92\n\n0.92\n\n0.90\n\n0.92\n\n0.83\n\n0.80\n\n404\n\n450\n\n468\n\n466\n\n442\n\n368\n\n446\n\n461\n\n93\n\n106\n\n96\n\n109\n\n92\n\n81\n\n77\n\n71\n\n표 2에 도시된 결과로부터 알 수 있는 바와 같이, 본 발명의 바람직한 실시예 각각에서, 자성이 증가하고, 감자곡선의 각형비가 증가하고 최대에너지적(BH)rma은 비교예의 어느 것보다 양호하다.\n\n특히, 시료 번호 1과 5는 시\n\n료 번호 1에는 V가 첨가되고 시료번호 5에는 첨가되지 않는 점을 제외하고 준 동일조건에서 생산된다.\n\n따라서\n\n이들 두 시료의 결과를 서로 비교할 때, 시료번호 1의 보자력Br과 최대에너지적(BH)max이 시료번호 5의 것보다 적어도 약 1％ 좋다.\n\n도 2는 약 6분 동안 약 700 ℃에서 열처리된 시료 A, B 및 C상에서 실시한 분말 X선 회절분석(XRD)의 결과이다.\n\n시료 A, B 및 C의 조성은 각기 Nd5.8Fe75.7B12C1Ti4V1.5, Nd9 Fe73B12.6C1.4Ti4 및 Nd4.5Fe73B상세하게는, 시료 A는 본 발명의 바람직한 실시예를 나타낸다.\n\n18.5Co2Cr2이다.\n\n도 2에 도시된 결과로부터 알 수 있는 바와 같이, 시료 A는 2개의 다른 시료보다 α­ Fe 상을 나타내는 세기에서 현저한 피크를 나타냈다.\n\n시료 A는 그 주\n\n성분으로 Nd2Fe14B 상(즉. 경질 페라이트상)과 α­ Fe상(즉, 연질 페라이트상)을 함유한 α­ Fe/R2Fe14B계 나노컴포지트 자석이며, 또한 시료 A는 또 다른 연질 페라이트상으로 Fe23B3상을 더 함유한다.\n\n한편, 시료 B는 Fe3B와 같은 철계 붕화물이 경질 페라이트상인 Nd2Fe14B상의 입계상에 존재하는 나노컴포지트 자석이다.\n\n시료 C는 Fe3B를 전체 체적 중 비교적 많이 함유하는 Fe3B/Nd2Fe14B계 나노컴포지트 자석이다.\n\n산업상 이용 가능성\n\n본 발명의 여러 바람직한 실시예에 따르면, Ti 및 V를 그 조성이 종래의 방법에 의해서 자기특성이 충분히 좋은나노컴포지트 자석을 생산하기에 효과적이지 않은 재료 합금에 함께 첨가하여 실제 자기특성이 좋은 나노컴포지트 자석을 양산할 수 있다.\n\n본 발명의 여러 바람직한 실시예에 따르면, 재료 합금이 비교적 붕소를 다량 함유할 때조차 첨가제 V는 효과적으로 불필요한 Ti-B 화합물이 생성되는 것을 방지할 수 있다.\n\n따라서 이러한 금속 합금의 용탕은 그다지 점도가 크지 않을 것이므로 스트립 캐스팅법에 의해서 α­ Fe/R2Fe14B계 나노컴포지트 자석을 양산하는데 기여한다.\n\n전술한 설명은 단지 본 발명의 예시적인 것임을 주의해야 한다.\n\n본 발명의 요지를 벗어나지 않는 범위 내에서당해 기술분야의 통상의 자는 다양한 변형예 및 수정예를 고안할 수 있다.\n\n따라서 본 발명은 첨부된 청구범위\n\n의 요지내에서 이러한 모든 수정예, 변형예를 포함하도록 의도된다.\n\n도면의 간단한 설명\n\n도 1은 본 발명의 바람직한 실시예에 사용되는 스트립 캐스터(strip caster)의 대표적인 구성을 개략적으로 도시한 단면도이고,\n\n도 2는 본 발명의 바람직한 실시예와 다른 비교예에서 수행되는 분말 XRD 분석의 결과를 도시하는 그래프이다.', '技术领域\n\n本发明一般涉及适用于各种电动机和致动器的纳米复合磁体,及其制造方法,更具体地,涉及R2Fe14B型晶体结构的硬磁相和α-F相等。本发明涉及一种纳米复合磁体,其是具有不同软磁相的化合物。\n\n背景\n\n背景技术近年来,在家用电器,OA设备和各种类型的电气设备中,需要更高的性能以及更小的尺寸和重量。\n\n因此,对于在这些装置中使用的永磁体,要求在作为磁路工作时使质量的性能最大化,例如,剩余磁密度(Br)为0.5T(Tessra)以上。需要使用永磁体。\n\n但是,由于过去较便宜而被广泛使用的硬质铁氧体磁体不能具有0.5T以上的剩余磁通密度(Br)。\n\n近来,作为具有至少0.5T或更高的高剩余磁通密度(Br)的典型永磁体,通过粉末冶金工艺制造的Sm-Co磁体是已知的。\n\n具有高剩余磁通密度的其他永磁体。\n\n例如,通过粉末冶金法制造的Nd-Fe-B系列烧结磁体和通过熔融淬火工艺制造的Nd-Fe-B系列快速凝固磁体较大。可以表现出剩余磁通密度(Br)。\n\n例如,在日本专利早期公开No.59-46008中公开了前一种基于Nd-Fe-B的烧结磁体,而例如在日本专利早期公开No.59-46008中公开了后者的基于Nd-Fe-B的快速冷却磁体。 60-9852号。\n\n但是,由于Sm和Co都是昂贵的材料,因此Sm-Co磁体具有价格昂贵的问题。\n\n另一方面,Nd-Fe-B磁体由相对便宜的Fe作为主要成分(占总重量的约60%至约70%)制成,因此它们比Sm-Co磁体便宜得多。生产Nd-Fe-B磁体仍然很昂贵,因为Nd的分离,纯化和还原反应需要大规模的设备以及大量的制造和处理工艺,Nd约占Nd的10%至15%。 。\n\n另外,粉末冶金法本身通常具有相对大量的制造工艺。\n\n与通过粉末冶金法形成的Nd-Fe-B基烧结磁体相比,通过液体淬火法可以廉价地生产Nd-Fe-B基快速凝固磁体。\n\n这是因为,Nd-Fe-B系淬火磁铁是通过熔融,液冷,热处理等比较简单的工序得到的。\n\n然而,为了通过液体淬火法获得块状永磁体,需要通过将由淬火合金制成的磁粉与树脂粘合剂混合来形成粘结磁体,因此仅形成的粘结磁体所占据的磁粉的体积比仅为1。大约是80%。\n\n另外,通过液体淬火法制造的快速凝固合金具有磁各向同性特性。\n\n由于上述原因,与通过粉末冶金法制造的磁各向异性Nd-Fe-B基烧结磁体相比,使用液体淬火法制造的Nd-Fe-B基快速凝固磁体具有更低的剩余磁通密度。 Br)有问题。\n\n如日本特开平1-7502号公报所述,由选自Zr,Nb,Mo,Hf,Ta和W中的至少一种元素,以及Ti,V和Cr组成的组。复合添加至少一种选自Nd-Fe-B的元素作为改善Nd-Fe-B系列淬火凝固磁体性能的方法是有效的。\n\n通过添加此类元素\n\nW提高了磁体的矫顽力(Hcj)和耐腐蚀性,但是除了提高粘结磁体的密度以外,还没有有效的方法来提高剩余磁通密度(Br)。\n\n另外,根据许多现有技术,在包含大于约6原子%的稀土元素的Nd-Fe-B系列淬火和凝固磁体的情况下,熔融金属通过喷嘴朝冷却辊喷射。熔融纺丝工艺用于快速固化熔融金属。\n\nR.Coehoorn等人,J.de Phys,C8,1998,第669至670页提出了用于Nd-Fe-B基淬火凝固磁体的替代磁性材料。\n\n这种材料例如Coehoorn具有相对较低的稀土元素组成比(即Nd3.8Fe77.2B19附近的组成,其中下标的单位表示原子%),并且具有以Fe3B相为主的组成。\n\n这样\n\n永磁材料是通过对通过液体淬火法制造的非晶态合金进行结晶和热处理而获得的。\n\n另外,结晶材料具有亚稳态结构,其中软磁性Fe3B相和硬磁性Nd2Fe14B相混合,并且细晶粒(即,具有几纳米大小的颗粒)均匀且精细地分布在这两种结晶化合物中。我们有。\n\n因此,它被称为“纳米复合磁体”。\n\n这些纳米复合磁铁\n\n据报道具有1T或更高的高剩余磁通密度(Br),但是这种纳米复合磁体的矫顽力(Hcj)相对较低,例如,从约160kA / m至约240kA / m。\n\n因此,仅当磁体的工作点为1以上时,才能使用这种永磁材料。\n\n另外,例如,参考日本特开平3-261104号公报,日本特开平2727505号公报和日本特开平2727506号公报,使用了纳米复合磁体的各种材料合金来提高磁特性。已经提出添加金属元素,但是获得它不够可靠。\n\n总是要有足够的“每单位成本的特性值”,更具体地讲,用这种技术生产的纳米复合磁体无法获得足够大小的矫顽力,以实际用于各种目的,而且这些磁体都没有它也没有表现出足够的磁性以供实际使用。\n\nW.C.Chan等人报道了一种获得具有约数十nm的晶体尺寸的Nd 2 Fe 14 B相和αFe相的方法。\n\n厕所。\n\n根据Chan等人的著作,“难熔金属对αFe/ R2Fe14B型纳米复合材料的磁性的影响”(IEEE,Trans。Magn。No. 5,INTERMAG。99 Gyeongju,韩国,第3265-3267页,1999年),Chan等人。在该技术中,将非晶态前驱体La添加到原料合金中,然后将其熔融纺丝以获得包含非晶相作为主要成分的淬火凝固合金,并对合金进行热处理和结晶,以同时形成Nd2Fe14B和αFe相。所有的核都有生长。\n\n此外,这些纸可以通过添加极少量(例如约2原子%)的不溶性金属成分例如Ti来改善磁体的性能。优选地,稀土元素Nd的组成比可以从约9.5原子%增加到约5原子%。公开了可以通过将Nd 2 Fe 14 B相和αFe相的晶体尺寸增加到11.0原子%来减小。\n\n此处添加的不溶性金属元素可防止形成硼化合物(如R2Fe23B和Fe3B),从而使磁体基本上仅由Nd2Fe14B相和αFe相组成。\n\n根据Chan等人的技术,通过熔融纺丝工艺制备了用于纳米复合磁体的淬火固化合金,其中,熔融金属通过喷嘴通过喷嘴喷到高速旋转的冷却辊的表面上。\n\n该熔融纺丝方法具有非常好的冷却速率,从而可以充分且有效地生产非晶态淬火固化合金。\n\n  为了解决这些问题,本发明涉及在日本特开2002-175908号公报中公开的总量。\n\nR2Fe14B型\n\n决定\n\n结构性\n\n卷%\n\n增加\n\n复合和\n\n相同\n\n改善的\n\n纳米复合材料\n\n磁铁\n\n提供。\n\n具体地,这些纳米复合磁体是通过将Ti添加到包含约10原子%的稀土元素和约10原子%或更多的硼的材料合金中而获得的,从而在熔融合金的快速冷却和凝固期间αFe相不会过度生长。我会输。\n\n日本专利公开号2002-285301和日本专利公开号3297676公开了可以添加到纳米复合磁体中的许多组分,例如Al,Si,V,Cr,Mn,Ga,Zr,Mb,Mo,Ag。公开了Hf,Ta,W,Pt,Au和Pb等。\n\n在日本专利特开No.2002-175908中公开的纳米复合磁体中,通过添加Ti,获得其中在软铁素体相的晶界中精细地分散有软铁素体相的稀有结构。然而,当稀土元素的组成比远小于这种纳米复合磁体的组成比时,硼的组成比不会降低到小于约10原子%,从而不能获得具有优异磁性能的纳米复合磁体。\n\n然而,包含少于约10原子%的稀土元素和少于约10原子%的硼的材料合金在熔融时粘度过度增加,并且所得的淬火固化合金几乎不能获得所需的显微组织。\n\n该熔融合金通常通过液体淬火法淬火,该液体淬火法可以是使冷却辊以相对较高的速度旋转的熔融纺丝法,或者是使冷却辊以相对较低的速度旋转的剥离工艺。\n\n在各种方法中,带钢铸造被认为是一种液体淬火方法,因为它具有相对较低的冷却速率并且可以生产相对厚的薄板型淬火和凝固合金,因此可以有效地大量生产薄板型淬火和凝固合金。\n\n然而,为了通过诸如带铸的冷却速度相对较低的液体淬火法,以批量生产稀土元素的组成比小于约7原子%的纳米复合磁体,材料合金需要包含至少约10原子%的硼。有。\n\n否则,当Ti不与Nb一起或与Nb不单独添加到包含约4原子%至约7原子%的稀土元素和约10原子%至约15原子%的硼的材料合金中时,合成纳米复合磁体的矫顽力。 (HCJ)以这个例子\n\n听\n\n上电机\n\n真实\n\n用过的\n\n在磁铁上\n\n必要\n\n东方\n\n水平\n\n关于\n\n在400㎄/ m\n\n掉下来\n\n将\n\n退磁曲线\n\n(退磁曲线)的环路矩形度也将很差。\n\n发明详述\n\n为了解决上述问题,本发明的一个优选实施方式提供了一种纳米复合磁体,其包含相对少量的稀土元素和相对大量的硼,但是表现出优异的磁性能。\n\n根据本发明的优选实施方式的纳米复合磁体具有(Fe1-mTm)100-xyzwn(B1-pCp)xRyTizVwMn的组成式,其中T是选自由Co和Ni组成的组中的至少一种元素。 R为稀土元素,M为选自Al,Si,Cr,Mn,Cu,Zn,Ga,Nb,Zr,Mo,Ag,Ta和W以及组成比中的至少一种。 x,y,z,w,n,m和p均为10原子%<x≤15원자％, 4원자％≤y<7원자％, 0.5원자％≤z≤8원자％, 0.01원자％≤w≤6원자％, 0원자％≤n≤10원자％, 0원자％≤m≤0.5원자％ 및 0.01원자％≤p≤0.5원자％의 부등식을바람직하게 만족한다.\n\n纳米复合磁体优选具有具有R 2 Fe 14 B晶体结构的硬铁氧体相和软铁氧体相。\n\n优选的是,纳米复合磁体的矫顽力和最大能量乘积中的至少一个比不包含V的磁体的矫顽力和最大能量乘积中的至少1%或更大。\n\n在本发明的优选实施方式中,优选通过添加Ti和V,纳米复合磁体包含至少约40体积%的具有R 2 Fe 14 B型晶体结构的硬铁氧体相。\n\n在本发明的另一个优选实施方案中,具有R 2 Fe 14 B型晶体结构的硬铁氧体相优选具有约10nm至约200nm的平均粒径,并且软铁氧体相优选具有约1nm至约100nm的平均粒径。有。\n\n在本发明的另一个优选实施方案中,软铁氧体相优选包含αFe和铁磁性铁基硼化物。\n\n根据本发明的另一优选实施方式的用于制备纳米复合磁体的淬火凝固合金的方法优选为组成式(Fe1-mTm)100-x-y-z-w-n(B1-pCp)xRyTizVwMn。\n\n其中T是选自Co和Ni中的至少一种元素,R是稀土元素,M是Al,Si,Cr,Mn,Cu,Zn,Ga,Nb,Zr,Mo,它是选自由Ag,Ta和W组成的组中的至少一种元素,并且组成比x,y,z,w,n,m和p分别为10原子%。<x≤15원자％, 4원자％≤y<7원자％, 0.5원자％≤z≤8원자％, 0.01원자％≤w≤6원자％, 0원자％≤n≤10원자％, 0원자％≤m≤0.5원자％ 및 0.01원자％≤p≤0.5원자％의 부등식을 만족하는 재료 합금의 용탕을 준비하는 단계를 포함한다.\n\n该方法还包括将熔融金属淬火并固化以获得快速固化合金的步骤。 \n\n 在本发明的优选实施方式中,淬火步骤优选包括通过带铸法对熔融金属进行淬火和固化的步骤。 \n\n 根据本发明另一优选实施方式的制造纳米复合磁体粉末的方法优选地由组成式(Fe1-mTm)100-xyzwn(B1-p Cp)xRyTizVwMn表示,其中T是Co和Ni 是选自以下的至少一种元素:R是稀土元素,M是选自Al,Si,Cr,Mn,Cu,Zn,Ga,Nb,Zr,Mo,Ag,Ta和W 它是至少一种要选择的元素,并且组成比x,y,z,w,n,m和p分别为10原子% <x≤15원자％, 4원자％≤y<7원자％, 0.5원자％≤z≤8원자％, 0.01원자％≤w≤6원자％, 0원자％≤n≤10원자％, 0원자％≤m≤0.5원자％및 0.01원자％≤p≤0.5원자％의 부등식을 만족하는 급랭응고합금을 준비하는 단계를 포함한다. 이 방법은 바람직하게는 r2fe14b형 결정구조의 경질 페라이트상과 연질 페라이트상을 갖는 나노컴포지트 자석 합금을 얻기 위해서 열적으로 처리하는 단계와, 분쇄하는 더 포함한다.\n\n根据本发明另一优选实施方式的制造纳米复合磁体的方法优选地由其组成式(Fe1-mTm)100-xyzwn(B1-pCp)xRyTizVwMn表示,其中T由Co和Ni组成。 是选自以下的至少一种元素:R是稀土元素,M选自Al,Si,Cr,Mn,Cu,Zn,Ga,Nb,Zr,Mo,Ag,Ta和W。 它是至少一种元素,且x,y,z,w,n,m和p的组成比分别为10原子% <x≤15원자％, 4원자％≤y<7원자％, 0.5원자％≤z≤8원자％, 0.01원자％≤w≤6원자％, 0원자％≤n≤10원자％, 0원자％≤m≤0.5원자％ 및0.01원자％≤p≤0.5원자％의 부등식을 만족하는 나노컴포지트 자석 분말을 준비하는 단계를 포함한다. 이 분말은 바람직하게는 r2fe14b형 결정 구조의 경질 페라이트상과 연질 페라이트상을 갖는다.\n\n奈米\n\n优选地,复合磁体粉末的矫顽力和最大能量乘积中的至少一者为不包含V的磁体的至少一%或更大。\n\n该方法优选地进一步包括压缩纳米复合磁体粉末以获得纳米复合磁体的步骤。\n\n通过以下参考附图对优选实施例的详细描述,本发明的其他方面,组件,过程,步骤,特征和优点将变得更加明显。\n\n实际例子\n\n在本发明中,当将Ti和V添加到包含约4原子%至约7原子%的稀土元素以及约10原子%至15原子%的硼和碳的合金中时,纳米复合磁体的退磁曲线良好。基本思想是表示循环的矩形性。\n\n日本专利早期公开No.2002-285301和日本专利公开No.3297676公开了许多添加元素,但是完全没有公开通过在组合物中添加Ti和V获得显着效果。\n\n如本发明的申请人已经在日本专利早期公开No.2002-175908中公开的那样,添加剂Ti在熔融合金的快速冷却和凝固期间使αFe的形成和生长最小化。\n\n因此,通过添加Ti,可以得到其中包含约50体积%的具有R 2 Fe 14 B的晶体结构的硬质铁素体相,并且在硬质铁素体相的晶界上分散或薄分布有软质铁素体相的结构。\n\n本发明人发现,添加剂Ti具有这种理想的效果,但是降低了稀土元素的组成比,并且进一步改善了日本特开2002-175908号公报中公开的纳米复合磁体的磁化强度,但是磁性能相当差。\n\n为了提高晶体结构为R2Fe14B型的纳米复合磁铁的磁化强度,稀土元素的组成比与αFe,硼化铁等软铁氧体相和α2Fe14B型软铁氧体相混合并通过相互作用交换而磁结合通常,通过减小αFe相的体积%是有效的。\n\n这是因为αFe的饱和磁化强度优于R2Fe14B型晶体结构的硬铁氧体相的饱和磁化强度。\n\n然而,本发明人认为,如果将由Ti形成的稀土元素的组成比降低至约7原子%以下,并且矫顽力(Hcj)不大于400㎄/ m,则退磁曲线不能具有角度比,并且使用添加剂Ti。发现如果不添加太多磁性能不会改善。\n\n然而,如果试图通过简单地添加大量的添加剂Ti来解决该问题,则将产生非磁性的Ti-B化合物并且磁性将劣化。\n\n因此,本发明人进行了各种形成Ti和其他金属元素的实验,以使稀土元素的组成比降低至约7原子%以下,并添加至硼的组成比增大的化合物中。当添加组合物时,可以通过带式铸造法大量生产具有增加的硼化铁和αFe的体积%的纳米复合磁体。\n\n根据本发明的优选实施方式的纳米复合磁体优选表示为(Fe1-mTm)100-xyzwn(B1-pCp)xRyTizVwMn,其中T为选自由Co和Ni组成的组中的至少1个。它是物种元素,R是稀土元素,M是选自Al,Si,Cr,Mn,Cu,Zn,Ga,Nb,Zr,Mo,Ag,Ta和W的至少一种元素。 ,组成比x,y,z,w,n,m和p分别为10原子%。<x≤15원자％, 4원자％≤y<7원자％, 0.5원자％≤z≤8원자％, 0.01원자％≤w≤6원자％, 0원자％≤n≤10원자％, 0원자％≤m≤0.5원자％ 및 0.01원자％≤p≤0.5원자％의 부등식을 바람직하게 만족한다.\n\n纳米复合磁体优选具有具有R 2 Fe 14 B晶体结构的硬铁氧体相和软铁氧体相。\n\n在本发明的另一优选实施方式中,纳米复合磁体优选地添加Ti和V,使得纳米复合磁体的矫顽力和最大能量中的至少一个比不包含V的磁体的矫顽力和最大能量至少大1%或更大。做。\n\n通过添加Ti和V,纳米复合磁体优选包含至少约40体积%的具有R 2 Fe 14 B型晶体结构的硬铁氧体相。\n\n所得的R 2 Fe 14 B型硬质铁氧体相的晶体结构优选具有约10nm至约200nm的平均粒径,并且软质铁氧体相优选具有约1nm至约100nm的平均粒径。\n\n在本发明的优选实施方式中,优选在减压气氛中汽提含有Fe,B,C,R(包括Y的稀土元素中的至少一种)并且含有Ti和V作为必要元素的铁水基合金。通过液体淬火法例如铸造法对其进行淬火,以产生类似于微晶R2Fe14B型化合物的淬火和凝固的合金。\n\n淬火凝固合金是\n\n可以对其进行热处理以使残留在快速凝固合金中的非晶部分结晶。\n\n薄带连铸法是通过使熔融合金与冷却辊的表面接触而使熔融合金快速冷却并使其凝固来制造薄板型淬火固化合金的技术。\n\n在本发明的一个优选实施例中,熔融金属通过比常规带材浇铸方法中使用的冷却辊更快的旋转而被快速冷却和固化。\n\n与其中通过喷嘴孔将熔融合金喷射到冷却辊表面上的熔融纺丝工艺相比,带铸法导致较低的冷却速率。\n\n但是,带钢铸造法\n\n下表面使得可以大量生产,因为生产了具有相对较大的宽度和厚度的薄板型快速凝固合金。\n\n在某些情况下\n\n因此,可以使用常规的熔融纺丝方法来制造根据本发明的优选的纳米复合磁体,在常规的熔融纺丝方法中,通过喷嘴将熔融金属喷射到冷却辊的表面上。\n\n根据本发明的优选实施方式,当添加具有干扰αFe的成核和生长的功能的Ti,并且添加稀土元素并且还添加V时,αFe和具有高磁性的铁基硼化物。获得包含该适当量的纳米复合磁体结构。\n\n通过添加Ti和V的作用,即使降低熔融金属合金的冷却速度,也将产生适量的类型化合物相和αFe相。\n\nR2铁14B\n\n因此,即使在热处理之后,R 2 Fe 14 B型化合物相具有约10nm至约200nm的平均晶粒尺寸,并且软铁氧体相(例如,αFe)具有约1nm至约100nm的平均晶粒尺寸。通过分散可以获得具有优异磁性能的纳米复合磁体。\n\n当包含约5体积%至约50体积%的αFe时,基本由R 2 Fe 14 B型化合物相和αFe相组成的常规纳米复合磁体具有良好的饱和磁化强度,因此磁化良好,但是本发明的各种优选实施方式它具有比示例纳米复合磁体更少的硼。\n\n因此,当通过带钢铸造法以低的冷却速率生产常规的纳米复合磁体时,晶粒尺寸过度增加并且磁性能显着劣化。\n\n有了这个\n\n或者,根据本发明的优选实施方式中任一项的纳米复合磁体的材料合金包含大于10原子%的硼,并且可以通过薄带铸造大量生产具有优异性能的纳米复合磁体。\n\n在本发明的优选实施方式中,当在组合物中添加较少的稀土元素并且添加Ti和V时,尽可能多地包含具有R2Fe14B型晶体结构的硬铁氧体相,并且具有优异磁性能的软铁氧体相不会过度生长并且包含相对大量。做。\n\n结果,退磁曲线可以具有良好的角度比。\n\n另外,将添加剂Ti和V淬火\n\n可以从凝固合金中的富含B的非磁性非晶态相中生成硼化物相(例如铁磁性硼化铁),并且由于减少了热处理和结晶合金中残留的非磁性非晶态相的体积%可以增加。\n\n在本发明的优选实施方式中,可以通过适当地控制合金成分,合金冷却速度,热处理温度等各种加工条件,来制造具有比R2Fe14B系化合物的饱和磁化强度高的饱和磁化强度的铁基硼化物和αFe。 。\n\n软铁氧体相的实例包括铁基硼化物和αFe(具有约2.1T的饱和磁化强度和1.6T的饱和磁化强度)。\n\n在这种情况下,R2Fe\n\n14B型\n\nFe23B6(大约\n\n当R为Nd时,复合相的饱和磁化强度约为1.6T。\n\n在本说明书中,“非晶相”是指原子排列非常不规则的情况,以及用于结晶的核,超细区域(尺寸:几纳米或更小)和/或原子簇的情况。做。\n\n更多详情\n\n换句话说,“非晶相”是指具有不能通过X射线衍射分析或TEM观察确定的晶体结构的任何相。\n\n换句话说,具有通过X射线衍射分析或TEM观察可清楚地区分的晶体结构的相在本文中将被称为“结晶相”。\n\n本发明人通过实验证实,仅当Ti和V一起添加时,与将Ti和Cr或Ti和Zr一起添加的情况不同,磁性不会降低。\n\n另外,退磁曲线显示出特别好的角度比。\n\n这样\n\n根据该结果,发明人发现,添加剂Ti和V在使磁特性差的硼化物的析出最小化方面发挥重要作用。\n\n应当注意,当组成地添加Ti和Nb时,磁性不会降低,但是矫顽力会显着降低。\n\n如上所述,仅当添加Ti和V时,可获得具有优异的磁性能的纳米复合磁体,其包含在4原子%至7原子%的范围内的稀土元素和在10原子%至15原子%的范围内的硼。\n\n在本发明的各种实施方式中,材料合金不仅包含大量的硼,而且还包含碳作为必要元素之一。\n\n-6\n\n因此,该材料合金的熔融金属可具有约5×10m 2 / s或更小的运动粘度,并且足够平滑地流动以显着增加熔融金属与冷却辊之间的接触程度。\n\n结果是,\n\n由于可以在冷却辊上更有效地冷却熔融金属,因此即使当冷却辊低速旋转时也可以获得良好的纳米复合磁体。\n\n结果,在本发明的优选实施例中,采用了带材浇铸方法,其中熔融金属通过滑槽(例如,引导构件)直接供应到冷却辊上,而不控制熔融金属通过喷嘴孔的流量。可\n\n因此,该方法是一种改进的方法,其比控制通过喷嘴孔的流速的常规熔融纺丝方法生产率更高且成本更低。\n\n为了使R-Fe-B系稀土合金的熔融金属在即使在薄带连铸法中也可以进行的冷却速度范围内非晶化,通常必须添加约10原子%以上的硼。\n\n但\n\n如果添加过多的硼,则即使在对淬火和凝固合金进行热处理和结晶之后,高成分比的硼仍保留在处理的合金的微观结构中,从而导致非磁性非晶态相。\n\n没有。\n\n换句话说,作为获得均匀的微晶结构的结果,铁磁相的体积%减少并且磁性劣化。\n\n然而,当如本发明的优选实施方式中那样添加Ti和V时,由于观察到上述现象等,因此产生了具有良好的饱和磁化强度的铁基硼化物,并且磁性显着增加。\n\n理想的成分\n\n  当B和C的总组成比(x)小于约10原子%时,当冷却速率为约10℃/ s至约10℃/ s时,R 2 Fe 14 B型晶相2\n\n5\n\n难以制备其中混合有非晶相和非晶相的预定的淬火固化合金,并且即使随后对该合金进行热处理,所获得的矫顽力也不会很好。\n\n此外,当组成比(x)为约10原子%以下时,不再产生具有良好的饱和磁化强度的铁基硼化物。\n\n因此,组成比(x)应为约10原子%以上。\n\n一\n\n当B,C的块的总组成比(x)超过约15原子%时,即使进行热处理和结晶也残留合金,非晶相的体积%增加。\n\n被敌人减少。\n\n另外,降低饱和磁化强度最佳的αFe相的组成比,结果也是残留磁(Br),从这些方面考虑,B和C的总组成比(x)优选为10原子%以上且15原子%以下。并且,更优选为约11原子%以上且约14原子%以下。\n\n就原子比而言,C与B和C之和的比例(p)优选在约0.01以上且约0.5以下的范围内。\n\n为了获得添加C的效果,优选C的比率(p)为0.01以上。\n\n如果较小,则几乎不能获得C加成的效果。\n\n因为p大于0.01\n\n另一方面,当p大于约0.5时,具有过大的晶粒尺寸的αFe相的量增加,导致磁性能劣化的问题。\n\n并且,p的上限优选为约0.25。\n\nC\n\n比率(p)的下限优选为约0.02,并且更优选地,比率(p)为约0.05以上且约0.15以下。\n\nR是选自稀土元素(例如Y)中的至少一种元素,优选基本上不含La或Ce。\n\n当存在La或Ce时,由于存在于R 2 Fe 14 B上的R(通常为Nd)被La或Ce取代,因此矫顽力和退磁曲线的角度比变差,因此优选实质上不包含La和Ce。\n\n只有微量\n\n当不可避免地将La或Ce(约0.5原子%或更少)作为杂质存在时,就磁性能而言没有问题。\n\n因此,当其含有约0.5原子%以下的La或Ce时,表示“实质上不包含La(Ce)”或“实质上可以忽略La(Ce)”的情况。\n\n更具体地,R包含Pr或Nd作为必需元素,并且一些必需元素可以被Dy和/或Tb取代。\n\n当R的组成比(y)小于总数的约4原子%时,不能充分形成具有有助于表现出硬磁特性的R2Fe14B型晶体结构的化合物相,并且变得不可能获得期望的矫顽力(Hcj)。 。\n\n同时,R的组成\n\n当比率(y)为约7原子%或更高时,非晶形成能力降低,并且软磁α-Fe相和Fe-B相的丰度降低,从而降低了磁性。\n\n因此,优选将稀土元素(R)的组成比(y)调整为约4原子%以上且小于约7原子%,更优选约5原子%以上且约6原子%以下的范围。\n\n钛在熔融合金的快速冷却和凝固过程中比软铁素体相更快地促进了硬铁素体相的成核和生长,并且还改善了矫顽力(Hcj)和残余磁通密度(Br)以及退磁曲线的角比。贡献并改善最大能量面积(BH)max。\n\n当Ti的组成比(z)小于总量的约0.5原子%时,不能充分表现出Ti添加的效果。\n\n同时钛\n\n如果组成比z超过总和的约8原子%,则即使在结晶热处理之后仍残留的非晶相的体积比增加,从而残留磁通密度Br可能降低。\n\n就这一点而言,Ti的组成比(z)优选在约0.5原子%以上且在约8原子%以下的范围内,并且z的优选范围的下限为约1.0原子%,并且更优选z的范围的上限。大约是原子百分比的6%。\n\nz范围的更优选上限为约5原子%。\n\n另外,由C和B组成的总组成比(x)越高,则越容易形成含有过量的硼的非晶相,因此优选增加Ti的组成比(z)。\n\n它集中在系统中。\n\nTi对B具有很强的亲和力,并且具有坚硬的铁素体晶粒,但是如果Ti的组成比(z)与B的组成比(x)太高,则Ti不会出现在晶界中,并且可能进入R2Fe14B化合物以降低磁化强度。有这个\n\n创建了许多透视图。\n\n另外,如果Ti与B的比率(z / x)过低,则根据富B装甲实验,优选将组成比率调整为满足0.05≤z/ x≤0.4、0.1≤z /x≤。更优选满足0.35。\n\n更优选为0.13≤z/x≤0.3。\n\n其他添加剂V可以减少为了获得优异的磁性而添加的Ti的量,从而使Ti-B化合物的形成最小化,增加磁性并降低熔融金属的粘度。\n\n结果,材料合金\n\n通过Ting方法可以更轻松地快速固化。\n\n当V的组成比(w)小于约0.01原子%时,不能充分表现出V添加的效果。\n\n同时,V的组成比\n\n如果(w)超过总量的6原子%,则将生成V-Fe-B基化合物的核,因此磁性能可能劣化。\n\n从这一观点出发,V的组成比(w)优选在约0.01原子%至约6原子%的范围内,更优选在约0.1原子%至约4原子%的范围内,更优选范围为约0.5原子%以上且约2原子%以下。\n\n为了获得若干期望的效果和优点,还可以添加由Al,Si,Cr,Mn,Cu,Zn,Ga,Nb,Zr,Mo,Ag,Ta和W组成的金属元素(M)。它可以包含少量的至少一种选自该组的元素。\n\n房间\n\n通过测试证实,除非这些金属元素(M)的组成比(n)超过约10原子%,否则添加剂Ti和V所能达到的效果不会显着降低。\n\n除了元素B,C,R,Ti,V和M之外,材料合金的残余物还可以是Fe,但是用至少一种选自Co和Ni的过渡金属元素T代替Fe部分也是很好的。在这种情况下,可以获得期望的硬磁性能。\n\n然而,当取代基T与Fe的原子比(m)超过约0.5时,不能获得约0.7T或更高的高剩余磁通密度(Br)。\n\n在这方面,原子序数比(m)优选为约0至约0.5。\n\n另外,钴的铁部分\n\n通过替代,改善了退磁曲线的角度比,并且提高了R2Fe14B相上的居里温度,从而改善了温度特性。\n\n有限公司\n\nFe取代的原子数之比(m)的优选范围为约0.005以上且约0.4以下。\n\n在此,将参考附图描述本发明的优选实施例。\n\n在本发明的第一优选实施方案中,淬火固化合金优选使用图1所示的汽提器制备。\n\n该合金制备过程优选在惰性气体气氛下进行,以防止被充分氧化的稀土元素R和Fe被氧化。\n\n或其他合适的气体。\n\n作为惰性气体,例如氦,氩的单磁体,氮的氦或氩的磁体比氮气优选,因为氮相对容易地与稀土元素R反应。\n\n图1中所示的带材连铸机在减压惰性气体气氛中设置在腔室(未示出)中。\n\n条形图如图1所示  \n\n这样,带钢连铸机优选地设置有熔化炉11,冷却辊13和斜槽(即,引导构件; 14)。\n\n首先,将原料合金在熔化炉11中熔化,然后将熔融金属12从熔化炉11中拉出,并通过斜槽14引导到冷却辊13的表面上,以在冷却辊13上将其快速冷却。固化。\n\n熔化炉11优选地布置成以基本恒定的比率将通过将材料合金熔化而获得的熔融金属12供应到斜槽14上。\n\n该进料速度例如可以通过使熔融炉11倾斜一定角度来任意地控制。\n\n冷却辊13的外周面优选由导热性优异的材料(例如铜)制成。\n\n优选具有30cm至约100cm的直径和约15cm至约100cm的宽度。\n\n否)可以以预定速度旋转。\n\n是可调的。\n\n3\n\n滚筒13大约\n\n该辊13是电动机(如图\n\n通过控制该旋转速度,冷却辊13的表面速度通过由带坯连铸机实现的冷却速度是任意确定的。例如,适当地选择冷却辊13的旋转速度。\n\n这样,可以将其控制在10℃/ s至10℃/ s的范围内。\n\n熔融金属12被引导通过的滑槽14的表面相对于水平面形成倾斜角β。\n\n(13)的表面之间的距离优选在大约几毫米的范围内。\n\n溜槽14的尖端和冷却辊\n\n另外,在溜槽14中,相对于冷却辊13的尖端的中心的交线相对于竖直平面形成角度(α; 0°≤α≤90°)。\n\n倾斜角(β)为10°≤β≤55°\n\n希望被满足。\n\n同时,滑槽14的倾斜角β优选满足1°≤β≤80°,并且更优选5°≤β≤60°。\n\n在将熔融金属12倒入斜槽14上之后,将熔融金属从斜槽14的尖端供应到冷却辊13的表面上,从而在冷却辊13上形成熔池。 。\n\n溜槽14可以通过将熔融金属12的流量降低到以预定的流量暂时改变从熔融炉11连续输送的熔融金属12的流动方向的程度来校正熔融金属12的流动。有。\n\n通过选择性地阻挡倾倒在斜槽14上的熔融金属12的表面流的挡板可以进一步增强该整流效果。\n\n通过使用该斜槽14,可以将熔融金属12供给为在冷却辊13的长度方向上具有大致恒定的宽度。\n\n在本规范中,冷却\n\n辊13的“纵向”与辊13的轴向(即,从底表面出来的方向)相同。\n\n图12所示的实施例可以展开以具有基本均匀的厚度。\n\n因此,可以精细地控制熔融金属的流速。\n\n流。\n\n另外,供应的熔融金属\n\n通过调节斜槽14的熔融金属引导表面的倾斜角β,熔融金属12从斜槽14的倾斜引导表面向下移动,使得熔融金属12在水平方向(即,X轴)上。它具有基本平行的动量。\n\n换一种说法\n\n因此,随着斜槽14的倾斜角β的增加,熔融金属12的流速增加并且斜槽14的动量增加。\n\n另外,斜槽14可以调节刚到达冷却辊13的熔融金属12的温度。\n\n优选的是,温度比液体的温度高约100℃或更高。\n\n溜槽(14)上的熔融金属(12)\n\n如果熔融金属12的温度太低,则影响所产生的淬火固化合金的性能的TiB 2的初始晶体可能残留在淬火固化合金中并且可能发生局部成核。\n\n另外,如果熔融金属12的温度过低,则粘度变大,污染容易得多。\n\n西装(14)顶部\n\n熔融金属的温度可以通过调节从熔融炉11向溜槽14供给的熔融金属的温度或溜槽14的热容量来控制。\n\n在某些情况下,为此可以特别设置斜槽加热器(未示出)。\n\n在本发明的优选实施例中,斜槽14具有在冷却辊13的轴向上以预定间隔隔开的多个排出路径,并且其末端面对冷却辊13的外周表面。\n\n这些排出路径的每个宽度(对应于各自的熔融金属流动宽度)优选为约0.5cm至约10.0cm,更优选为约0.7cm至约4.0cm。\n\n在一个优选的实施方案中,每个熔融金属流的宽度为约1cm,等于排出路径的宽度。\n\n每个熔融金属的流动宽度对应于\n\n应该注意的是,当您离开出口时,横向上有增加的趋势。\n\n溜槽有很多排出路径\n\n如在优选实施例中那样,在(14)上形成多个熔融金属流,并且每对相邻的熔融金属流不应彼此接触。\n\n在将熔融金属12倒入斜槽14上之后,熔融金属12被分成多个熔融金属流,使得每个熔融金属流的宽度基本上等于相应的排出路径在冷却辊13的轴向上的宽度。等于\n\n(13)正在联系。\n\n之后,当辊13以恒定的宽度旋转时,供给到冷却辊13上的各个熔融金属流12在辊13的外周表面上向上移动。\n\n它迅速冷却。\n\n此时,每个熔融金属流像冷却辊一样,熔融金属流12位于斜槽14的远端和冷却辊13之间,以防止熔融金属在沿辊13移动时泄漏。该距离优选小于约3mm,更优选在约0.4mm至约0.7mm的范围内。\n\n每对相邻的出口通道之间的间隔约为10厘米。\n\n可以接触到\n\n所有。\n\n这样,熔融金属12在彼此分离的位置处是冷却辊13,此时,能够有效地冷却从相应的排出路径供给的各熔融金属流,其结果,熔融金属12被放置在斜槽14上。即使快速倒入,也可以获得所需的冷却速度。\n\n应当注意,衣服14不必具有上述构造。\n\n相反,西装14只是\n\n它可以具有一个排出路径,并且可以被提供以增加每种熔融金属的流动宽度。\n\n在另一个变体中\n\n然后,也可以将开口的管设置在滑槽14的末端(或底部),以便可以通过开口的管将熔融金属12供应到冷却辊13的表面上。\n\n西装14的其他变型是可能的。\n\n在熔融金属12在旋转冷却辊13的外周表面上淬火并固化之后,淬火的凝固合金从冷却辊13变成薄板状的凝固合金15。\n\n在本发明的优选实施例中,通过排出路径供给的熔融金属的各流被固化成具有预定宽度的薄板,并且固化的合金15被收集器(未示出)压碎并收集。\n\n如上所述,与熔体纺丝法不同,带钢铸造法不使用任何喷嘴。\n\n铸造方法没有与熔融纺丝方法相关的几个问题。\n\n换句话说,地带\n\n特别地,由于带钢铸造方法不需要喷嘴,因此熔融金属的供给速度不受喷嘴的直径和当熔融金属意外地在喷嘴中凝固时发生的喷嘴堵塞问题的限制。\n\n因此,带材铸造方法对于批量生产是有效的。\n\n敬业精神是必需的。\n\n此外,通过喷嘴加热设备或熔融金属水压力控制机构,可以显着降低初始设备成本和设备运行成本。\n\n另外,在熔融纺丝法中,由于喷嘴不被再循环,因此制造喷嘴昂贵,但是在使用一次之后必须将其丢弃。\n\n  相比之下,带式铸造方法使得能够重复使用斜槽,从而导致工厂的运行成本大大降低。\n\n另外,在带铸法中,与熔融纺丝法相比,可以使冷却辊低速旋转,并且可以更快地供给熔融金属,因此可以使所获得的薄板型快速凝固合金变厚。\n\n例如,通过适当地确定溜槽14的形状和构造,熔融金属排出路径的宽度和数量以及熔融金属的供给速率,所生产的薄板型淬火固化合金可以具有在期望范围内的平均厚度和宽度。\n\n期望具有约80mm的宽度。\n\n所有。\n\n如果快速凝固合金太薄,则其振实密度太小而不能获得所需的快速凝固合金。\n\n相反,如果快速凝固的合金太厚,则合金可以在熔融金属/辊接触表面和自由表面(即熔融金属表面)上以不同的速率冷却。\n\n有。\n\n在这方面,薄板型合金优选为约15mm至约15mm,并且薄板型合金可以不太薄或太厚,以使得自由表面周围的合金部分不能被充分冷却。其厚度为50μm至约250μm,更优选为约60μm至约200μm,并且更优选为约70μm至约90μm。\n\n考虑到石材的堆积密度,薄板型合金的厚度优选为80μm以上。\n\n另外,让我们债券\n\n在这种情况下,淬火气氛\n\n该组处于约10kPa至约101.2kPa的减压气氛中。\n\n任选地,根据本发明另一优选实施方式的纳米复合磁体可以通过液体冷却方法如熔体纺丝法或喷雾法代替上述条铸法来制备。\n\n热处理\n\n在本发明的优选实施方式中,淬火合金的热处理在氩气气氛中进行。\n\n理想的\n\n将螃蟹以约5℃/ s至约20℃/ s的升温速率在约550℃以上且约850℃的温度下保持约30秒以上且约20分钟以下的时间,然后冷却至室温。\n\n通过该热处理,亚稳态的微晶在非晶相中沉淀并生长,并形成纳米复合结构。\n\n并且,如果热处理温度小于约550℃,则即使在热处理后仍残留许多非晶相,并且根据快速冷却条件,矫顽力可能无法达到足够的水平。\n\n另外,当热处理温度超过约850℃时,各构成相的晶粒显着生长,残留磁通密度(Br)降低,退磁曲线的角度比变差。\n\n因此,热处理\n\n该温度优选为约550℃以上且约850℃以下,但更优选的热处理温度范围为约570℃以上且约820℃以下。\n\n为了防止合金的氧化,热处理气氛优选为惰性气体气氛(例如,Ar,N 2)。\n\n约0.1kPa\n\n您可以在以下真空中进行热处理。\n\n在本发明的优选实施方式中,即使硬质铁素体相具有较小的晶界,例如,存在诸如αFe,Fe3B和Fe23B6的软质铁素体相,软质铁素体相和硬质铁素体相通过交换相互作用而磁化。由于结合,显示出优异的磁性能。\n\n热处理后的Nd 2 Fe 14 B型化合物的平均晶体粒径需要为约300nm以下,其为末端球的粒径,更优选为约10nm以上且约200nm以下,并且更优选为约10nm以上且约150nm以下。\n\n这个\n\n另一方面,如果铁磁性硼化物相或αFe相的平均结晶粒径超过约100nm,则在软铁氧体相与硬铁氧体相之间发生的交换相互作用弱,退磁曲线的角度比变差。 )max减小。\n\n通常,这些相难以形成平均晶粒尺寸小于约1nm的超细晶体,并且由于形成的平均晶粒尺寸为约几nm,所以软铁氧体相例如硼化物或α-Fe相的平均晶粒尺寸为约1nm。优选不小于100nm,优选不小于约5nm且不大于约50nm,更优选不小于约5nm且不大于约30nm。\n\n另外,为了获得可互换弹簧磁体的优异的磁性,优选Nd 2 Fe 14 B型化合物相的平均晶粒尺寸大于软铁氧体相的平均晶粒尺寸。\n\n并且在热处理之前,淬火固化的合金的薄板可以被粗略地切割或压碎。\n\n热处理后获得的磁铁\n\n通过微粉碎(微粉碎)并制造磁性粉末(磁性粉末),可以通过已知方法由该磁性粉末制造各种粘结磁体。\n\n在制造粘结磁体的情况下,将铁基稀土合金磁粉与环氧树脂或尼龙树脂粘合剂混合并成型为所需形状。\n\n此时,可以将其他类型的磁性粉末(例如,Sm-Fe-N磁性粉末或硬质铁酸盐磁性粉末)与纳米复合磁性粉末混合。\n\n使用根据本发明的优选实施方式获得的粘结磁体,可以制造各种旋转装置,例如电动机和致动器。\n\n当将根据本发明另一优选实施方式的磁性粉末用于注射成型粘结磁体时,优选研磨以使得平均粒径为约200μm以下,并且更优选粉末的平均粒径为约30μm以上且约150μm以下。成为。\n\n另外,当用于压缩成型粘结磁体时,优选进行粉碎以使粒径为约300μm以下,并且粉末的平均粒径更优选为约30μm以上且约250μm以下。\n\n更优选地,其在粒度分布中具有两个峰,并且平均粒径为约50μm以上且约200μm以下。\n\n例\n\n例子1\n\n对于下表1中所示的每个样品编号1至8,分别称重纯度为99.5%或更高的每种材料B,C,Fe,Co,Ti,V和Nd,以使总重量约为600 g,然后将该混合物银被供应到氧化铝熔化炉。\n\n之后,这个\n\n对于合金材料,通过感应加热法在约70kPa的氩(Ar)气氛中制备熔融合金。\n\n做。\n\n熔融金属温度达到约1500℃后,将熔融金属倒入水冷铜模中以形成扁平合金,然后称重至总重量约15 g,并在底部形成直径约0.8 mm的孔的晶体熔化炉。提供给。\n\n接下来,通过感应加热法将合金在约1.33kPa至约47.92kPa的氩气(Ar)气氛中溶解以制备熔融合金。熔融金属的温度达到约1,350°C之后,用Ar气体对熔融金属的表面进行加压,以在室温下在Ar气氛中将熔融金属通过孔口喷射到位于孔口下方约0.7mm的冷却辊的外周表面上。\n\n冷却辊旋转,以使表面速度约为10 m / s。\n\n这样\n\n熔融金属合金通过与冷却辊接触而被迅速冷却并固化。\n\n这样大约2毫米\n\n依次获得约3mm的厚度和约20μm至50μm的厚度。\n\n表格1\n\n没有。\n\nË\n\nX\n\n一种\n\n中号\n\nC\n\nØ\n\n中号\n\nP\n\n一\n\n2\n\n3\n\n4\n\n5\n\n6\n\n7\n\n8\n\n钕\n\n5.8\n\n5.8\n\n5.8\n\n5.8\n\n5.8\n\n5.8\n\n5.8\n\n5.8\n\n铁\n\n残渣\n\n残渣\n\n残渣\n\n残渣\n\n残渣\n\n  残渣\n\n残渣\n\n残渣\n\nŤ\n\n二氧化碳4\n\n--\n\n合金成分比(原子%)\n\n乙\n\nC\n\n钛\n\n12\n\n一\n\n4\n\n12\n\n一\n\n4\n\n12\n\n一\n\n4\n\n12\n\n一\n\n4\n\n12\n\n0\n\n4\n\n12\n\n一\n\n4\n\n12\n\n一\n\n4\n\n12\n\n一\n\n4\n\nV\n\n一\n\n1.5\n\n2\n\n1.5\n\n0\n\n0\n\n0\n\n0\n\n中号\n\n0\n\n铌1\n\n锆1\n\n铬1\n\n热处理温度(\n\n℃)\n\n720\n\n700\n\n700\n\n700\n\n720\n\n740\n\n720\n\n740\n\n在表1中,样品编号1至4代表本发明的优选实例,样品编号5至8代表对比例。\n\n将该薄板型淬火凝固合金在Ar气氛中加热至约600℃至800℃的温度,在该温度下热处理约6至8分钟,然后在室温下冷却。\n\n磁力计VSM)用于测量磁性能。\n\n结果示于下表2。\n\n表2\n\n样品编号\n\n凝固合金的磁性能\n\nHCJ(㎄/米)\n\n(BH)rma(kJ /㎥)\n\n溴(T)\n\nË\n\nX\n\n一种\n\n中号\n\nC\n\nØ\n\n中号\n\nP\n\n之后,薄板型淬火凝固合金\n\n2\n\n3\n\n4\n\n5\n\n6\n\n7\n\n8\n\n0.93\n\n0.92\n\n0.92\n\n0.92\n\n0.90\n\n0.92\n\n0.83\n\n0.80\n\n404\n\n450\n\n468\n\n466\n\n442\n\n368\n\n446\n\n461\n\n93\n\n106\n\n96\n\n109\n\n92\n\n81\n\n77\n\n71\n\n从表2中所示的结果可以看出,在本发明的每个优选实施例中,磁性增加,退磁曲线的角度比增加,并且最大能量面积(BH)rma优于任何比较例。\n\n特别是,样本编号1和5为\n\n它是在相同的条件下生产的,只是将V添加到1号样品中,而不是将V添加到5号样品中。\n\n因此\n\n当将这两个样品的结果相互比较时,样品1的矫顽力Br和最大能量面积(BH)max比样品5的至少约1%。\n\n图2是对在约700℃下热处理约6分钟的样品A,B和C进行的粉末X射线衍射分析(XRD)的结果。\n\n样品A,B和C的组成分别为Nd5.8Fe75.7B12C1Ti4V1.5,Nd9Fe73B12.6C1.4Ti4和Nd4.5Fe73B,具体而言,样品A代表本发明的优选实施方案。\n\n它是18.5Co2Cr2。\n\n从图2所示的结果可以看出,与其他两个样品相比,样品A在表示αFe相的强度上显示出显着的峰。\n\n样本A是星期\n\n它是包含Nd2Fe14B相(即硬铁氧体相)和αFe相(即软铁氧体相)作为成分的αFe / R2Fe14B纳米复合磁体,样品A还包含Fe23B3相作为另一种软铁氧体相。做。\n\n另一方面,样品B是纳米复合磁体,其中在硬质铁氧体Nd2Fe14B相的晶界相中存在铁基硼化物如Fe3B。\n\n样品C是Fe3B / Nd2Fe14B纳米复合磁体,在总体积中包含相对大量的Fe3B。\n\n工业可用性\n\n根据本发明的几个优选实施方式,将Ti和V与成分合金一起添加,该材料合金的成分对于通过常规方法生产具有良好磁性能的纳米复合材料无效以生产具有足够良好磁性能的纳米复合磁体。磁铁可以大量生产。\n\n根据本发明的几个优选实施方式,即使当材料合金包含相对大量的硼时,添加剂V也可以有效地防止产生不必要的Ti-B化合物。\n\n因此,这样的金属合金的熔融金属不会具有非常高的粘度,因此有助于通过带铸法大量生产αFe/ R2Fe14B纳米复合磁体。\n\n应该注意的是,前面的描述仅仅是本发明的示例。\n\n在不脱离本发明的主旨的范围内,本领域普通技术人员可以设计出各种修改形式和修改形式。\n\n因此,本发明是所附权利要求\n\n旨在涵盖其范围内的所有此类修改和变型。\n\n附图说明\n\n附图说明图1是示意性地表示在本发明的优选实施方式中使用的带材连铸机的典型结构的剖视图。\n\n图2是示出在本发明的优选实施方式和另一比较例中进行的粉末XRD分析的结果的图。');
INSERT INTO `os_patent_instruction_text` VALUES (13001, 22830, '【技術分野】\n\n【0001】\n\n本発明は、永久磁石粉末の配向方法および永久磁石の製造方法、並びにそれらの方法を用いて得られる永久磁石に関する。\n\n【背景技術】\n\n【0002】\n\n高性能永久磁石として代表的なR-Fe-B系永久磁石(特許文献1など)は、優れた磁気特性を有しているため、各種モータ、アクチュエータなど様々な用途に使用され、用途に応じた種々の磁石特性を発揮するよう様々な組成のR-Fe-B系永久磁石が提案されている。しかし、電気·電子機器の小型·軽量化ならびに高機能化の要求は強く、R-Fe-B系永久磁石のより一層の高性能化とコストダウンが要求されている。\n\n【0003】\n\nR-Fe-B系永久磁石の高性能化には、残留磁束密度(Br)の向上、保磁力(iHc)の向上、温度特性の向上、耐食性の向上などが挙げられる。そのうち、残留磁束密度の向上については、以下の手段が有効であることが知られている。\n\n【0004】\n\n(1)強磁性相であり、主相のR2Fe14B相の存在量を多くする。\n\n【0005】\n\n(2)焼結体の密度を理論密度まで高める。\n\n【0006】\n\n(3)主相結晶粒の磁化容易軸方向の配向度を高める。\n\n【0007】\n\n上記(1)を達成するためには、磁石の組成を上記R2Fe14Bの化学量論的組成に近づけること、具体的には、R(希土類)量の低減、酸素量を低減することが好ましい。\n\n【0008】\n\nまた、上記(2)を達成するためには、合金作製にストリップキャスティング法を採用することにより、合金中のR-rich相を微細に分散させ、それによって焼結性を向上させることが有効である。\n\n【0009】\n\nさらに、上記(3)を達成するためには、永久磁石粉末を十分に配向させてから成形を行なうことが有効である。永久磁石粉末を十分に配向させるためには、パルス磁界などによって高い強度の磁界を印加したり、永久磁石粉末の潤滑性を向上させたりする方法が知られている。また、配向のバラツキを防止するために、成形空間に均一な磁界分布を形成することが知られている。\n\n【0010】\n\n上記の永久磁石粉末を十分に配向させる方法として、例えば、R-Fe-B系合金粉末をモールド内に充填密度1.4〜3.5g/cm3に充填し、瞬間的に10kOe以上のパルス磁界を磁界方向を繰り返し反転させて付加し、それによって配向を行なった後、冷間静水圧プレスする方法が提案されている(特許文献2)。\n\n【0011】\n\nこの提案による方法は、高いパルス磁界を、磁界方向を繰り返し反転させながら印加することが特徴であり、磁界強度が35kOeのパルス磁界を反転繰り返し付加することが記載されている。磁界分布についての記載はないが、モールド全体に対して均一な磁界を印加しているものと思われる。\n\n【0012】\n\nまた、均一な配向度を得るための方法として、磁性粉を所定磁界強度の磁界中にて所定方向に配向する際、磁界強度の配向磁界領域よりも弱い磁界強度を有する弱磁界領域又は無磁界領域から配向磁界領域に磁性粉を相対的に移動させる方法が提案されている(特許文献3)。\n\n【0013】\n\n前記の提案は、プレス装置のキャビティ内に設けられた、下側から上方へ磁界強度が順次上昇する空間の下側に、ボンド磁石用コンパウンド(磁石と樹脂の混合物)を配置する。コンパウンドの上方は何もない自由空間としておく。この状態で静磁場を印加することにより、コンパウンドは重量に抗して強い磁界領域の上方向へと移動する。このとき、コンパウンドの周囲には自由空間が形成されているので、コンパウンド間の摩擦力が低下し、コンパウンドの回転運動が容易となる。移動したコンパウンドは磁界方向に鎖状につながり、均一に配向するというものである。\n\n【0014】\n\n従来、特許文献2及び特許文献3に代表されるように、主相結晶粒の磁化容易軸方向の配向度を高めるために種々の提案がなされ、磁界分布は均一なほどよい、またその配向磁界は高いほどよいという考え方が支配的であった。\n\n【特許文献1】特開昭59-46008号公報\n\n【特許文献2】特開平8-167516号公報\n\n【特許文献3】特開2001-93712号公報\n\n【発明の開示】\n\n【発明が解決しようとする課題】\n\n【0015】\n\nR-Fe-B系永久磁石における残留磁束密度(Br)の理論値は、R2Fe14B金属間化合物の飽和磁化Isである1.6Tであるとされ、最大エネルギー積((BH)max)で512kJ/cm3であるとされている。これは、R2Fe14B金属間化合物(単結晶)による値であるため、市場に供される焼結磁石やボンド磁石といった形態においては、残留磁束密度1.6Tを得ることは実質的に不可能であるが、それに限りなく近づけることは可能である。\n\n【0016】\n\nしかし、特許文献2による方法では、最高でも残留磁束密度(Br)は1.4T程度であり、また、特許文献3による方法では、ボンド磁石の例が記載されているが、焼結磁石の場合に得られる残留磁束密度Brについては具体的に記載がなく、この方法も焼結磁石に適用した際に得られる効果は不明である。いずれにしても、近年の要求を満足するためには、それ以上の残留磁束密度(Br)を得ることが必要である。\n\n【0017】\n\n本発明は、配向磁界は高ければ高いほどよい、磁界分布は均一なほどよいという従来の考え方を根本的に変える配向方法により、主相結晶粒の磁化容易軸方向の配向度をさらに高め、電気·電子機器の小型·軽量化および高機能化に対応した高磁気特性を備えた永久磁石を提供することを目的とする。\n\n【課題を解決するための手段】\n\n【0018】\n\n本発明による永久磁石粉末の配向方法は、配向磁界方向に永久磁石粉末を配向させる永久磁石粉末の配向方法であって、配向磁界方向に長さLを有する空間の内部に永久磁石粉末を充填密度1.4〜4.2g/cm3で充填する工程と、前記空間の配向磁界方向における中心以外の位置で磁界強度が最高値を示し、かつ、前記空間の配向磁界方向の両端部のうち前記磁界強度が最高値を示す位置から遠い方の端部における磁界強度が前記磁界強度の最高値よりも1.0T以上低くなる傾斜磁界を形成することにより、前記空間内に充填されている永久磁石粉末に磁力を及ぼし、それによって前記磁界強度の最高値を示す位置の近傍で前記永久磁石粉末の充填密度を相対的に上昇させながら磁界配向を行なう傾斜磁界印加工程とを含む。\n\n【0019】\n\n好ましい実施形態において、前記傾斜磁界印加工程は、パルス磁界を印加する工程である。\n\n【0020】\n\n好ましい実施形態において、前記傾斜磁界印加工程を複数回行なう。\n\n【0021】\n\n好ましい実施形態において、複数回行なう前記傾斜磁界印加工程のうち、第1回目の傾斜磁界印加工程と第2回目の傾斜磁界印加工程との間で、印加磁界の極性を変化させる。\n\n【0022】\n\n好ましい実施形態において、複数回行なう前記傾斜磁界印加工程のうち、第1回目の傾斜磁界印加工程と第2回目の傾斜磁界印加工程との間で、印加磁界の強度分布が示す勾配の極性を変化させる。\n\n【0023】\n\n好ましい実施形態において、前記第1回目の傾斜磁界印加工程と前記第2回目の傾斜磁界印加工程とを繰り返す。\n\n【0024】\n\n好ましい実施形態において、前記空間の配向磁界方向における中心で磁界強度が最高値を示す磁界を印加する工程を更に含む。\n\n【0025】\n\n好ましい実施形態において、前記配向磁界は、磁界強度が略直線的に変化する部分を含む強度分布を有している。\n\n【0026】\n\n好ましい実施形態において、前記傾斜磁界印加工程における前記配向磁界の前記最高値を1.0T以上に設定する。\n\n【0027】\n\n好ましい実施形態において、前記傾斜磁界印加工程において、前記空間内に充填されている永久磁石粉末に磁力を及ぼすとき、前記永久磁石粉末の配向磁界方向の移動を規制する。\n\n【0028】\n\n好ましい実施形態において、前記永久磁石粉末は、R-Fe-B系磁石の粉末から構成されている。\n\n【0029】\n\n好ましい実施形態において、前記永久磁石粉末は、ストリップキャスティング法によって得られた鋳片を粉砕することによって作製された粉末である。\n\n【0030】\n\n好ましい実施形態において、前記永久磁石粉末を充填する前記空間が、可撓性を有するモールドによって規定される。\n\n【0031】\n\n好ましい実施形態において、前記空間が、プレス装置のダイと上下パンチとによって規定される。\n\n【0032】\n\n本発明の永久磁石の製造方法は、永久磁石粉末を用意する工程と、上記いずれかの永久磁石粉末の配向方法によって前記永久磁石粉末を配向する工程と、前記永久磁石粉末を成形し、焼結する工程とを含む。\n\n【0033】\n\n好ましい実施形態において、前記成形は、冷間静水圧プレスによって行なう。\n\n【0034】\n\n好ましい実施形態において、前記成形は、一軸圧縮プレスによって行う。\n\n【0035】\n\n本発明の永久磁石は、上記いずれかの永久磁石の製造方法によって得られた永久磁石であって、配向度が92%以上である。\n\n【0036】\n\n本発明の永久磁石は、上記いずれかの永久磁石の製造方法によって得られた永久磁石であって、理論値の90%以上の残留磁束密度(T)値を示す。\n\n【発明の効果】\n\n【0037】\n\n本発明の永久磁石粉末の配向方法によれば、強磁性を有する主相結晶粒の磁化容易軸方向の配向度を極限まで高めることができる。\n\n【0038】\n\n例えば、本発明をR-Fe-B系焼結磁石の製造方法に適用することによって最も好ましい条件を選定した場合、残留磁束密度(Br)の値が1.533T(理論値のほぼ96%)、最大エネルギー積((BH)max)の値が460kJ/m3という、これまでには存在しなかった、極めて高い磁気特性を有する永久磁石を得ることが可能となる。これにより、近年要求される、電気·電子機器の小型·軽量化ならびに高機能化に十分に対応することが可能となる。\n\n【0039】\n\nまた、本発明は極めて簡便な方法であるため、永久磁石のコストアップを招くことがない。本発明によれば、磁界強度が比較的低くても極めて高い残留磁束密度Brを得ることできる。換言すれば、従来と同じ程度の残留磁束密度Brを得る場合、配向磁界の強度を低く設定してもよい。従って、従来よりも低い磁界で配向すること可能になるので、プレス装置におけるコイル電源を小型化し、省エネルギーなどを実現することが可能になる。\n\n【0040】\n\nさらに、本発明により得られる永久磁石は、減磁曲線の角型性に極めて優れている。\n\n【発明を実施するための最良の形態】\n\n【0041】\n\n本発明は、強磁性を有する主相結晶粒の磁化容易軸の配向度を極限まで高めることができるという効果を有するため、本発明に適用できる永久磁石粉末としては、強磁性を有する主相結晶粒を有する永久磁石粉末が適用可能である。例えば、フェライト磁石、R-Co系磁石、R-Fe-B系磁石などである。中でも、R-Fe-B系磁石、特に、R-F\n\ne-B系焼結磁石は本発明の効果を最も発揮することができる。\n\n【0042】\n\nR-Fe-B系永久磁石を用いる場合、ストリップキャスティング法によって得られた厚さ0.1〜1.0mmの原料合金を水素粉砕法などによって粗く粉砕した後、ジェットミル粉砕などによって更に微粉砕した磁石粉を用いることが好ましい。原料合金の粗粉砕及び微粉砕は、上記方法に限定されず、他の公知の方法を用いて行なうことができる。また、粗粉砕によって得られた粗粉末粉や微粉砕によって得られた微粉砕粉に公知の潤滑剤を添加すると、永久磁石粉末の配向度をより一層向上させることができるので好ましい。\n\n【0043】\n\n以下、本発明による永久磁石粉末の配向方法の一例を説明する。ここでは、永久磁石粉末としてR-Fe-B系焼結磁石の粉末を用いる例を説明する。\n\n【0044】\n\nまず、図6を参照して、従来の配向方法を説明する。従来の配向方法では、図6に示すように、例えばゴムモールド内やプレス機のキャビティ内などの空間内の磁界分布が、空間の配向方向の長さLの中心に、磁界強度の最高値が位置するとともに、中央部付近において均一磁界を有し、端部へ行くほど磁界強度が低くなっていた。このような磁界分布中において、印加磁界強度の最高値が位置する中心付近(均一磁界内)で成形が行われていた。\n\n【0045】\n\n次に、図1及び図2を参照して、本発明の永久磁石粉末の配向方法を説明する。\n\n【0046】\n\n本発明による配向方法によれば、粉末が充填されるべき空間の磁界強度が図1に示す分布を持つように形成される。より具体的には、配向方向に長さLを有する上記空間の中心からシフトした位置で磁界強度が最高値を示す。図1の例では、図の左側端部に近い位置に磁界強度の最高値を示す位置があり、右側端部へ行くに従って磁界強度が低くなっている。つまり、磁石粉末が充填される空間内における磁界強度の分布が非対称であり、配向方向に沿って変化している。このような磁界を「傾斜磁界」と称することとする。\n\n【0047】\n\n本発明では、空間内における磁界強度の最高値(a)と、前記空間の端部のうち磁界強度が最高値を示す位置からから遠い方の端部における磁界強度(b)との差(「a-b」)が1.0T以上になるようにパルス状の磁界を印加する。\n\n【0048】\n\nなお、磁界強度の最高値を示す位置から近い方の端部(c)は、この最高値(a)よりも磁界強度が低いが、最高値を示す位置から遠い方の端部(b)よりも磁界強度が高い方が望ましい。このとき、図の中心に対して、磁界強度が最高値を示す位置を含む左側の領域が高磁界強度側となり、最高値を示す位置から遠い方の端部を含む図中右側の領域が低磁界強度側となる。\n\n【0049】\n\n図2は、本発明による最も好ましい磁界分布例である。印加磁界強度が左側端部から右側端部へと略直線状に傾斜しながら低下していることが特徴である。\n\n【0050】\n\n前記磁界強度の最高値が位置する近傍で高く、最高値から遠い方の端部近傍で低くし、前記傾斜磁界中において磁界配向を行うと、空間内の永久磁石粉末の充填密度は、前記磁界分布における磁界強度の最高値が位置する近傍(高磁界強度側)で高く、最高値から遠い方の端部近傍(低磁界強度側)で低くなることが本発明の特徴である。\n\n【0051】\n\n上記の充填密度の変化について、図1を例にとって説明すると、図1の如く、空間の中心より左側に磁界強度の最高値を有する傾斜磁界中で配向を行うと、各永久磁石粉末は磁界強度の最高値が位置する側(高磁界強度側、図中左側)へ移動しようとする力が働くが、結果として、その端部には空間壁面が存在するため、この空間の壁面に永久磁石粉末が\n\n押し寄せされて、充填密度が高くなる。逆に、磁界強度の最高値から遠い方の端部側(低磁界強度側、図中右側)の充填密度は低くなる。このとき、空間内の容積全体における平均充填密度は磁界印加前の充填密度と同じである。\n\n【0052】\n\nこのように、磁界印加後の永久磁石粉末の充填密度が、磁界分布中における高磁界強度側で高くなることによって、永久磁石粉末は印加磁界方向へ配向されたままで固定されることとなる。従って、パルス磁界を印加し終わったのちも、その固定状態を維持するので、静磁界などの外部磁界を印加し続ける必要がないという利点がある。\n\n【0053】\n\n本発明によれば、上記のような永久磁石粉末の移動と空間内における充填密度の変化により、永久磁石粉末の配向度が向上されているものと考えられる。こま永久磁石粉末の移動と空間内における永久磁石粉末の充填密度の変化は、磁界印加前に空間内に充填する永久磁石粉末の充填密度を1.4〜4.2g/cm3にしておくことによって起こる。充填密度が1.4g/cm3未満では永久磁石粉末の移動は起こるが充填密度の変化が起こらず、パルス磁界印加後、その配向状態が維持されず、永久磁石粉末の配向度が低下する。一方充填密度が4.2g/cm3を超えると永久磁石粉末の移動が起こり難くなり、永久磁石粉末の配向度が低下するため好ましくない。より好ましい範囲は3.0〜4.0g/cm3である。\n\n【0054】\n\n前述の特許文献2に開示されている方法では、モールド内でパルス磁界を反転させながら繰り返して印加するが、特許文献2は傾斜磁界の使用については教示も示唆もしてない。このため、特許文献2の方法では、従来通り、モールドの全体に対して均一な磁界を印加していると考えられる。従って、特許文献2の方法によれば、永久磁石粉末の移動と空間内における永久磁石粉末の充填密度の変化は起こっておらず、本発明のような効果は得られない。\n\n【0055】\n\n一方、特許文献3に開示されている方法では、配向磁界領域(成形空間)よりも弱い磁界強度を有する弱磁界領域又は無磁界領域から配向磁界領域へ磁性粉を移動させる。ただし、磁性粉は特定の空間内の所定の密度を有するように充填されておらず、磁性粉の存在しない部分を広く含む空間の内部を磁性粉が移動している。このため、磁性粉の移動は空間を仕切る部材によって規制されず、磁性粉の全体が空間内を比較的自由に移動する。磁性粉は、移動後もコイルによる静磁場によって引き付けられて集合しているだけである。このため、磁性粉の位置による充填密度の変化は生じず、そもそも、磁性粉が自由に移動できる広い空間が形成されているため、磁性粉は充填されているとは言えず、「充填密度」という概念すらない。従って、永久磁石粉末の移動とともに空間内における永久磁石粉末の充填密度の変化は起こっておらず、本発明のような効果は得られない。\n\n【0056】\n\nまた、特許文献3においては、空間内における平均の粉末密度が極めて低いので、配向後に磁粉末の配向方向が固定されない。従って、配向後も静磁界を印加し続けて、成形が終了するまで配向を維持し続けなければならない。\n\n【0057】\n\n従来、配向磁界は高ければ高いほどよく、磁界分布は均一なほどよいという考え方が存在したが、本願発明では、その考え他を根本的に変えている。\n\n【0058】\n\n本発明において、配向のために磁性粉末が充填される空間(形成される磁界強度の分布が配向方向に沿って変化している空間)は、プレス装置のダイと上下パンチとで形成されるキャビティや、例えばゴムや樹脂などの可撓性を有するモール度によって規定されることが好ましい。前述のように、本発明では、このような空間内に永久磁石粉末を充填密度1.4〜4.2g/cm3で充填するため、空間内を永久磁石粉末は塊となって移動することはできない。すなわち、永久磁石粉末を構成する個々の粒子はミクロなスケールでは\n\n自由に移動するとともに回動することもできるため、充填密度かに分布が生じるが、空間の内壁が粉末の移動を規制するため、特許文献2に記載されているような空間内を磁性粉末がかたまりとなって移動することはない。\n\n【0059】\n\n本発明では印加する磁界は、パルス磁界である。印加磁界の強度分布における最高値は1.0T以上であることが好ましい。磁界強度の最高値が1.0T未満では、永久磁石粉末を配向することが困難となるため好ましくない。磁界強度の最高値の上限値は、現在一般的に使用されている着磁装置の範囲において、コイル電源装置の大きさや消費電力などを考慮して決定すればよい。但し、本発明による傾斜磁界による配向方法を用いることにより、従来の配向方法のように、高い磁界強度を印加しなくても、比較的低い磁場でも従来と同等の磁気特性を有する永久磁石を得ることが可能になる。言いかえれば、従来と同様に高い磁界強度を印加することにより、従来よりも格段に優れた磁気特性を有する永久磁石を得ることが可能になる。\n\n【0060】\n\n本発明による配向方法は、傾斜磁界中において1回行えば、本発明による効果を得ることができるが、2回以上(複数回)行うことにより、さらに効果を向上させることができる。複数回行う場合は、第1回目の配向と第2回目の配向との印加磁界の極性を異ならせるか、あるいは強度を異ならせることが好ましい。\n\n【0061】\n\n図1を参照しながら、印加磁界の極性を異ならせる場合を説明すると、例えば、高磁界強度側(図中左側)をN極、低磁界強度側(図中右側)をS極として第1回目の配向を行った場合、第2回目は高磁界強度側(図中左側)をS極、低磁界強度側(図中右側)をN極とする。この場合、永久磁石粉末の移動はほとんど起こらないが、未配向粉末の配向ができ、永久磁石粉末の配向度が向上する。\n\n【0062】\n\n次に、図1を参照しながら、印加磁界の傾斜方向を異ならせる場合を説明すると、高磁界強度側(図中左側)をN極、低磁界強度側(図中右側)をS極として第1回目の配向を行った場合、第2回目は、図中左側を低磁界強度とし、図中右側を高磁界強度とする。つまり、右下がりの傾斜を右上がりの傾斜に入れ替える。この場合、永久磁石粉末の移動と空間内における充填密度の変化が起こり、永久磁石粉末の配向度がさらに向上する。なお、この時、極性はそのままでも切り替えてもよい。\n\n【0063】\n\nまた、上記の極性を異ならせる場合を繰り返し行ったり、傾斜方向を異ならせる場合を繰り返し行ったり、それらを組み合わせて繰り返し行うこともできる。この場合、最も好ましいのは、第1回目の配向と第2回目の配向の傾斜方向を異ならせ、それを繰り返し行うことである。\n\n【0064】\n\n本発明は、これまで述べた上記の構成によって永久磁石粉末の配向度を向上させることができるが、充填密度が変化したまま次の工程となる成形工程へ進むと、成形体に密度差が生じることとなり、配向度の向上により磁気特性は格段に向上するものの、焼結体の変形、その変形による加工工程の増加などを招く可能性がある。\n\n【0065】\n\nそこで、本発明の配向方法により、1回あるいは複数回の傾斜磁界による配向を行ったのち、空間の配向方向の長さLの中心に印加磁界の強度の最高値が位置する磁界分布、すなわち、従来から行われていた均一な磁界分布で、少なくとも1回配向することにより、成形体の密度差が解消し、焼結体の変形を抑制することができる。但し、この場合においても、上記の通り、磁界印加前に特定の充填密度で充填し、傾斜磁界中で配向を施しているため、単に均一磁界中で高磁界強度によって配向されたものや、均一磁界中で繰り返し反転させるパルス磁界によって配向されたもの(特許文献2)に比べ、永久磁石粉末の配向度が向上していることは言うまでもない。\n\n【0066】\n\n上述した本発明による永久磁石粉末の配向方法によって配向した粉末は、以下の方法によって成形される。\n\n【0067】\n\n可撓性を有するモールド内の永久磁石粉末を配向した場合、成形は、冷間静水圧プレスによって行うことが好ましい。先に説明したように、配向後の永久磁石粉末は、モールド内で所定の配向方向に固定されているので、成形時の磁界印加は基本的に必要でない。むろん、磁界を印加して成形しても差しつかえはない。\n\n【0068】\n\nプレス装置におけるダイと上下パンチとで形成されるキャビティ内で永久磁石粉末を配向した場合、成形は、上下パンチによる一軸圧縮プレスによって行う。この時も、上記と同様に、成形時の磁界印加は基本的に必要ではないが、磁界を印加してもよい。\n\n【0069】\n\n成形後の成形体は、公知の手段によって焼結、熱処理され、焼結磁石となす。\n\n【0070】\n\nこれによって、主相結晶粒の磁化容易軸の配向度を極限まで高めた、永久磁石を得ることができる。\n\n【0071】\n\n得られた永久磁石は、焼結体の配向度が92%以上であり、また、理論値(1.6T)の90%以上の残留磁束密度(Br)を発現することができる。この配高度、残留磁束密度は、従来方法では得られなかった、極めて優れた特性を発揮する。\n\n【実施例】\n\n【0072】\n\n(実施例1)\n\n組成が、Nd28.5B1.00Co0.50Cu0.05Al0.05残部Fe(mass%)を溶解し、合金溶湯をストリップキャスティング法によって急冷し、合金鋳片を得た。合金鋳片は厚さ0.3mmであった。\n\n【0073】\n\n上記合金鋳片を、水素粉砕、脱水素によって粗粉砕し、さらに、ジェットミル粉砕によって、平均粒径3μmに微粉砕した。\n\n【0074】\n\n次に、得られた微粉砕粉を、直径25mm、高さ25mmのゴムモールドに充填密度3.5g/cm3で充填し、ゴム製の蓋によってゴムモールドを密閉した。\n\n【0075】\n\n上記ゴムモールドを図3に示す磁界分布の傾斜配向(1)領域において配向した。図3に示す通り、磁界分布は、配向方向の長さLの中心以外(図3においては左側)に磁界強度の最高値(8.0T)が位置し、かつ、最高値と配向方向における該最高値から遠い方の端部(4.5T)との強度差が3.5Tであった。配向は、図3による傾斜配向(1)の磁界分布で1回(第1回目の配向)、傾斜配向(1)の分布を全く逆にした磁界分布(測定位置31mm位置における磁界強度が8.0T、測定位置57.5mm位置における磁界強度が4.5T、強度差が3.5T)で1回(第2回目の配向)、パルス磁界を印加することによって行った。\n\n【0076】\n\n次いで、配向後のゴムモールドを、冷間静水圧プレスによって成形した後、ゴムモールドを除去して内部の成形体を取り出し、この成形体を温度1373Kで2時間焼結し、さらに823Kで1時間熱処理を施し、焼結磁石を作製した。\n\n【0077】\n\n(実施例2)\n\n図3に示す磁界分布の傾斜配向(1)領域で1回配向を行う以外は、実施例1と同じ条件で焼結磁石を作製した。\n\n【0078】\n\n(実施例3)\n\n図3に示す磁界分布の傾斜配向(2)領域(測定位置40mm位置における磁界強度が7.5T、測定位置67mm位置における磁界強度が2.5T、強度差が5.0T)で1回配向を行い(第1回目の配向)、次いで傾斜配向(2)の分布を全く逆にした磁界分布で1回(第2回目の配向)パルス磁界を印加する以外は、実施例1と同じ条件で焼結磁石を作製した。\n\n【0079】\n\n(実施例4)\n\n図3に示す磁界分布の傾斜配向(2)領域で1回配向を行う以外は、実施例1と同じ条件で焼結磁石を作製した。\n\n【0080】\n\n(比較例1)\n\n図3に示す磁界分布の中心配向領域で1回配向を行い、極性を逆にして1回配向する以外は実施例1と同じ条件で焼結磁石を作製した。\n\n【0081】\n\n(比較例2)\n\n図3に示す磁界分布の中心配向領域で1回配向を行う以外は、実施例1と同じ条件で焼結磁石を作製した。\n\n【0082】\n\n図4に実施例1(傾斜(1)の◆印)、実施例2(傾斜(1)の■印)、実施例3(傾斜(2)の◆印)、実施例4(傾斜(2)の■印)比較例1(中心の◆印)及び比較例2(中心の■印)の残留磁束密度Br(T)の値を示す。\n\n【0083】\n\n図4から明らかなように、傾斜磁界中において第1の配向と第2の配向の磁界強度を異ならせた本発明による実施例1の磁石は、均一磁界中において極性を異ならせて配向した従来の比較例1による磁石に比べて、Brが大きく向上していることがわかる。また、傾斜磁界中において1回配向を施した本発明による実施例2の磁石も、均一磁界中においてい1回配向した従来の比較例2に比べ、Brが向上しており、従来の比較例1と同等のBrを有することが分かる。\n\n【0084】\n\nさらに、特筆すべきは、磁界強度の最高値が傾斜(1)よりも低い磁界分布で配向した実施例3と実施例4の磁石が、実施例1と実施例2の磁石よりもBrが高いということである。この結果は、従来の「磁界分布は均一なほどよい」という考え方を根本的に変えるものであり、本発明の大きな特徴である。\n\n【0085】\n\nこれらの結果から、磁界強度が比較的低くても、傾斜磁界中で配向することにより、極めて高いBrを得ることできる。換言すれば、従来と同じ程度のBrを得るのならば、磁界強度はもっと低くてもよいことになる。すなわち、従来よりも低い磁界で配向すること可能になるので、従来に比べ、コイル電源の小型化、省エネルギーなどを実現することが可能になる。\n\n【0086】\n\n図5は、減磁曲線の角型性を示している。本発明による実施例1及び実施例2の磁石は、従来の比較例に比べ、角型性に極めて優れることが分かる。また、Brの傾向と同様に、角型性においても、実施例3及び実施例4の磁石は、実施例1及び実施例2の磁石よりも優れている。\n\n【0087】\n\nこれは、傾斜磁界中における配向によって、永久磁石粉末の移動と空間内における充填密度の変化が同時に起こっているからであると考えられる。\n\n【産業上の利用可能性】\n\n【0088】\n\n本発明は、高性能化が強く求められている永久磁石に広く適用される。\n\n【図面の簡単な説明】\n\n【0089】\n\n【図1】本発明の永久磁石の配向方法を示す説明図である。\n\n【図2】本発明の永久磁石の配向方法を示す説明図である。\n\n【図3】磁界分布を示す説明図である。\n\n【図4】配向方法とBrの関係を示すグラフである。\n\n【図5】配向方法と減磁曲線の角型性の関係を示すグラフである。\n\n【図6】従来の永久磁石の配向方法を示す説明図である。', '【技术领域】\n\n【0001】\n\n本发明涉及一种永久磁铁粉末的比对方法和一种制造永久磁铁的方法,以及使用这些方法获得的永磁体。\n\n发明背景\n\n【0002】\n\n作为一种高性能永磁体,具有代表性的R-Fe-B基永磁体(如专利文献1)具有优良的磁特性,因此它被用于各种应用,如各种电动机和致动器,和根据所述应用各种组合物的R-Fe-B系永磁体已经提出了各种施加磁体特性。然而,小尺寸,轻量化的电气和电子设备以及用于高功能性的需求是强烈的,并且需要更多的高性能和R-Fe-B系永磁体的成本降低。\n\n【0003】\n\n对于-Fe-B基的R永久磁铁的高性能,剩余磁通密度(Br)提高,改善的矫顽力(iHc),改进的温度特性,改善的耐腐蚀性的,等等。在它们之中,已知的是,以下的手段是有效提高剩余磁通密度。\n\n【0004】\n\n(1)一种铁磁相,主要R相2Fe.14使B相丰。\n\n【0005】\n\n(2)所述的烧结体的密度提高到理论密度。\n\n【0006】\n\n(3)主相晶粒的磁化增强定向在轴向方向上的程度。\n\n【0007】\n\n为了实现上述(1),磁体的组成是2Fe.14优选的是,使接近B的化学计量组成,具体地,降低了R的量(稀土类)和氧气的量。\n\n【0008】\n\n此外,为了实现上述(2)中,通过采用在合金生产的带铸法,有效的是精细地分散的富R相在合金中,从而提高烧结性。可以。\n\n【0009】\n\n此外,为了实现上述(3),它是有效的,以形成模制之后充分定向永磁铁粉末。为了充分地定向永磁铁粉末,已知有通过脉冲磁场等或提高永久磁铁粉末的润滑施加高强度磁场的方法。此外,已知的是,以形成以防止在取向变化的成型空间中的均匀的磁场分布。\n\n【0010】\n\n由于充分定向上述的永久磁铁粉末,例如一种方法,为1.4〜3.5克/厘米的R-Fe-B合金粉末的模具的装载密度。3填充至瞬间反复扭转10kOe以上的脉冲磁场,并执行对准之后,压制冷流体静压的方法已被提出(专利文献2)。\n\n【0011】\n\n该提出的方法的特征在于,高的脉冲磁场的特征在于反复反转磁场方向,并且已经描述了磁场强度反复35千奥斯特的脉冲磁场反复加入。虽然对于磁场分布没有描述,可以认为,一个均匀的磁场被施加到整个模具。\n\n【0012】\n\n另外,作为用于获得均匀的取向,弱磁场区域或具有磁场强度比的磁场强度的磁场预定磁在预定方向上取向时,取向磁场区域更弱的磁场的方法场强度。一种方法,已经提出了用于从所述区域相对移动磁性粉末的取向磁场区域(专利文献3)。\n\n【0013】\n\n上述提案被放置在其中所述磁场强度被顺序地从下侧上升的空间,这是在压力机的腔提供的所述下侧上的粘结磁铁化合物(磁体的树脂的混合物)设备。该化合物的上方是一个自由的空间,什么都不做。通过在该状态下施加静态磁场,在针对重强磁场区域的上方向上的化合物移动。此时,由于自由空间围绕化合物形成,所述化合物之间的摩擦力减小,并且化合物的旋转运动变得容易。移动的化合物连接到所述磁场的方向和均匀地取向。\n\n【0014】\n\n以往,作为由专利文献2和专利文献3中表示的,提出了各种方案以增加在主相晶粒的易磁化轴方向取向程度,和磁场分布是均匀的,并且定向磁场的想法是好是占主导地位。\n\n[专利文献1]日本专利申请特开59-46008号公报\n\n[专利文献2]日本专利申请特开8-167516号公报\n\n[专利文献3]日本专利申请特开2001-93712号公报\n\n发明的描述\n\n本发明要解决的问题\n\n【0015】\n\n基于R-Fe-B系中的剩余磁通密度(Br)的理论值永磁体是2Fe.14B.假定它是1.6T,金属间化合物的其是饱和磁化强度,512千焦耳/厘米的最大能量乘积((BH)MAX)3有人说,它是。这是2Fe.14乙既然是在市场上提供的粘合磁铁由金属间化合物(单晶)的值,在烧结磁体的形式,并且,它是基本上不可能获得1.6 T的剩余磁通密度,但它可以把它回时刻。\n\n【0016】\n\n然而,在根据专利文献2的方法中,剩余磁通密度(Br)为约1.4 T,并在根据专利文献3的方法中,一个粘结磁铁的情况进行了说明,但在烧结的情况下磁体所得到的剩余磁通密度Br为没有具体描述,并且当该方法也适用于烧结磁铁所获得的效果是未知的。在任何情况下,有必要获得更多的剩余磁通密度(Br),以满足最近要求。\n\n【0017】\n\n根据本发明,对准磁场越高,磁场分布,越有可能在常规的概念,它是不均匀的,并且主相晶粒的进一步增加的程度的磁化的磁化程度主相晶粒的取向。•本发明的一个目的是提供一种具有对应于结构紧凑,重量降低和电子设备的高功能化高磁特性的永磁体。\n\n[解决问题的手段]\n\n【0018】\n\n根据本发明的永久磁铁粉末的比对方法是对准的永久磁铁粉末在定向磁场的方向,与永久磁铁粉末填充有永久磁铁粉末的空间内的永久磁铁粉末的比对方法具有1.4至4.2克/厘米的方向磁场方向的长度L.3填充过程,并在比所述对准磁场方向在取向磁场方向的中心以外的位置的磁场强度,和磁场强度的步骤是不远的地方,磁场强度是最高值的位置在空间的取向磁场方向的两端部之间。通过形成倾斜磁场,其中在人的端部的磁场强度比的磁场强度的最大值时,磁力被施加到永久磁铁粉末填充在空间中,从而使磁场强度在指示永久磁铁粉末的最高值的位置的附近,它包括一个分级磁场施加步骤,其执行磁场取向而相对提高的填充密度永磁铁粉末。\n\n【0019】\n\n在一个优选的实施例中,倾斜磁场施加步骤是施加脉冲磁场的步骤。\n\n【0020】\n\n在一个优选的实施例中,倾斜磁场施加处理被执行多次。\n\n【0021】\n\n在一个优选的实施方案中,所述第一梯度磁场施加步骤中,所述第一梯度磁场施加方法和第二梯度磁场施加方法,在第一梯度磁场施加方法和第二梯度磁场应用进程之间改变。\n\n【0022】\n\n在一个优选的实施例中,第一倾斜磁场施加步骤和所述第二中间等级磁场应用过程中,该梯度的极性指示通过的强度分布施加的磁场在第一梯度磁场施加方法和第二之间改变梯度磁场应用过程,让它。\n\n【0023】\n\n在一个优选的实施方案中,所述第一梯度磁场施加方法和第二分级磁场施加步骤被重复。\n\n【0024】\n\n在一个优选实施方案中,还包括将磁场施加在指示在该空间中的取向磁场方向中心的最高值的步骤。\n\n【0025】\n\n在一个优选的实施方案中,取向磁场具有的强度分布,其包括其中的磁场强度大致线性变化的部分。\n\n【0026】\n\n在一个优选的实施方案中,取向磁场中的倾斜磁场施加步骤中的最大值被设置为1.0 T或更多。\n\n【0027】\n\n在一个优选的实施方案中,在倾斜磁场施加步骤中,当磁力施加到填充在空间中的永久磁铁粉末,永久磁铁粉末的取向磁场的方向的移动被限制。\n\n【0028】\n\n在一个优选的实施例中,永久磁铁粉末由一个基于R-Fe-B系磁铁的粉末。\n\n【0029】\n\n在优选的实施方案中,永磁体粉末是通过通过剥离方法获得的板坯制备的粉末。\n\n【0030】\n\n在优选实施例中,用于填充永磁体粉末的空间由柔性模具限定。\n\n【0031】\n\n在优选实施例中,空间由模具和压力机装置的垂直冲头限定。\n\n【0032】\n\n制造本发明的永磁体的方法是制备永磁体粉末的步骤,以及通过任何一个永磁粉末的对准方法对准永磁体粉末的步骤,并模制了永磁粉末。包含该步骤。\n\n【0033】\n\n在优选的实施方案中,模制通过冷静压压制压力机进行。\n\n【0034】\n\n在优选实施例中,模制通过单轴压缩压力机进行。\n\n【0035】\n\n本发明的永磁体是通过制造上述永磁体之一的方法而获得的永磁体,取向程度为92%以上。\n\n【0036】\n\n本发明的永磁体是通过制造上述永磁体之一的方法获得的永磁体,并且显示了剩余磁通密度(T)值为90%或更多的理论值。\n\n【发明效果】\n\n【0037】\n\n根据本发明的永磁体粉末的对准方法,可以增加具有铁磁性的主相晶粒的磁化容易轴方向的取向程度可以增加到极限。\n\n【0038】\n\n例如,当通过将本发明应用于制造烧结磁体的方法来选择本发明时,残余磁通密度(BR)值为1.533T(近96%的理论值),最大值能源产品((BH)MAX)为460 kJ / m3可以获得迄今为止不存在的极高磁性的永磁体。这使得可以充分应对电气和电子设备的小型化,减轻重量,以及近年来所需的高功能。\n\n【0039】\n\n此外,本发明是一种非常简单的方法,从而不获得永磁体的成本增加。根据本发明,即使磁场强度相对较低,也可以获得非常高的残余磁通密度Br。换句话说,当获得具有与传统级别相同水平的残余磁通密度Br时,可以设置定向磁场的强度。因此,由于可以以低于现有技术的磁场对准,因此可以将线圈电源小型化,并实现节能等。\n\n【0040】\n\n此外,通过本发明获得的永磁体在退磁曲线的平方中非常优异。\n\n实施本发明的最佳方式\n\n【0041】\n\n本发明的效果是,具有铁磁性的主相晶颗粒的磁化容易轴的对准程度可以增加到极限,因此作为适用于本发明的永磁体粉末,具有铁磁永磁体的主相晶粉末粉末适用。例如,铁氧体磁铁,R-Co基磁体,R-Fe-B基磁体。其中,基于R-Fe-B的磁体,尤其是R-F\n\n基于E-B的烧结磁铁可以大部分本发明的效果。\n\n【0042】\n\n当使用基于R-Fe-B基的永磁体时,通过条带铸造方法获得的厚度为0.1至1.0mm的原料合金大致通过氢研磨方法等粉碎,然后是磁体粉末通过喷射研磨等进一步粉碎,类似于使用。原料合金的粗碎和精细研磨不限于上述方法,并且可以使用其他已知方法进行。此外,当可以添加通过粗粉粉末获得的细碎粉末和通过粗碎碎屑获得的细磨的润滑剂时,可以进一步改善永磁粉末的对准程度。\n\n【0043】\n\n在下文中,将描述根据本发明的永磁粉末的对准方法的示例。这里,将描述使用R-Fe-B基烧结磁体的粉末作为永磁体粉末的示例。\n\n【0044】\n\n首先,将参考图4描述传统的对准方法。在传统的对准方法中,如图2所示。例如,如图6所示,例如,诸如橡胶模具和压力机的腔中的空间中的磁场分布是长度中心的磁场强度的中心L在空间的对准方向上。随着位置,均匀磁场在中心部分附近具有均匀的磁场,并且磁场强度降低为端到端。在这种磁场分布期间,在施加磁场强度的最高值所在的中心的中心(在均匀的磁场中)进行模制。\n\n【0045】\n\n接下来,参考图1.参照图1和图2.如图2所示,将描述本发明的永磁粉末的对准方法。\n\n【0046】\n\n根据根据本发明的定向方法,形成待填充的空间的磁场强度以具有图1所示的分布。更具体地,磁场强度在从在对准方向上的空间的中心的中心移动的位置处最高。在图1的示例中如图1所示,存在指示靠近图的左侧端的位置处的磁场强度的最大值的位置,并且磁场强度降低到右端。也就是说,磁粉末填充的空间中的磁场强度的分布是不对称的,并且沿着方向方向变化。这种磁场被称为“倾斜磁场”。\n\n【0047】\n\n在本发明中,空间(a)中的磁场强度和空间末端的磁场强度的最大值(a)之间的差异,磁场强度(b)在远处的位置磁场强度是最高值(“ab”)施加到脉冲磁场,使其是1.0 t或更大。\n\n【0048】\n\n靠近指示磁场强度的最大值的位置的端部(c)低于最大值(a),而是远离表示最大值的位置的最大值(b)。也希望磁场力量很高。此时,关于图的中心,包括指示最高值的位置的左侧的区域是高磁场强度侧,并且右侧的区域在图中较低,包括结束从指示最高值的位置的较低值。它变成磁场强度侧。\n\n【0049】\n\n图。图2是根据本发明的最优选的磁场分布的示例。其特征在于,施加的磁场强度从左端到右端的左端降低。\n\n【0050】\n\n当磁场强度的最大值高时,最大值高,从最高值降低,并且在倾斜磁场中执行磁场对准,空间中的永磁粉末的填充密度是它的是本发明的一个特征,即分配的磁场强度的最高值位于(高磁场强度侧),并且端部的下端(低磁场强度侧)低于最大值(低磁场强度侧)。\n\n【0051】\n\n将参考图1描述上述填充密度的变化。如图1所示,如图1所示。如图1所示,如图1所示。如图1所示,每个永磁粉末是磁场强度移动到侧面的电源(高磁场强度侧,最高值的图中的左侧是,结果,空间的末端是永磁粉末,因为空间壁在其端部存在。但是\n\n它被推到增加填充密度。相反,从磁场强度的最大值较低的端面(低磁场强度侧,右侧)的填充密度较低。此时,空间中整个体积中的平均填充密度与磁场应用前的填充密度相同。\n\n【0052】\n\n如上所述,永磁粉末在施加的磁场方向上固定在施加的磁场方向上,当磁场应用之后的磁场施加的高磁场强度侧被定向在施加的磁场方向上。因此,由于脉冲磁场完成并且保持固定状态,因此有一个优点在于没有必要继续施加诸如静态磁场的外部磁场。\n\n【0053】\n\n根据本发明,认为,由于如上所述的永磁体粉末的移动和空间中的填充密度的变化,永磁体粉末的对准程度得到改善。用于在施加磁场之前填充空间的空间的永磁粉末的填充密度,永磁体粉末的永磁粉末的填充密度的变化为1.4至4.2g / cm。3它通过保持它而发生。填充密度为1.4克/厘米3如果发生永磁粉末的运动,则不会发生永磁体粉末的运动,并且在施加脉冲磁场之后,不保持对准状态,并且降低了永磁粉末的取向程度。另一方面,填充密度为4.2克/厘米3如果超过,则难以发生永磁体粉末的运动,并且永磁粉末的取向程度降低,这是不优选的。更优选的范围是3.0至4.0g / cm3它是。\n\n【0054】\n\n在上述专利文献2中公开的方法中,在反转模具中的脉冲磁场的同时重复脉冲磁场,但专利文献2不建议使用梯度磁场的教导。因此,在专利文献2的方法中,认为如前所述将均匀的磁场施加到整个模具上。因此,根据专利文献2的方法,不会发生永磁体粉末的运动中永磁体粉末的填充密度的变化,并且不能获得作为本发明的效果。\n\n【0055】\n\n在另一方面,在该方法在专利文献3中所公开的,从弱磁场区域或无场区具有磁场强度比取向磁场区域弱磁性粉末移动到对准磁场区域(成形空间)。然而,磁性粉末没有填充到具有在特定空间中的预定密度,含有磁性粉末的磁性粉末的宽的不存在的部分的内部空间移动。因此,磁性粉末的移动不受构件分隔的空间限制,整个磁性粉末在空间中移动比较自由地。磁性粉末仅共同由静磁场吸引由于移动甚至线圈。因此,改变所引起的磁性粉末不发生,该第一地点的位置的填充密度,因为磁性粉末上形成了自由运动的较宽的空间,所以不能说在磁性粉末的填充,“包装密度”甚至没有概念。因此,在与永久磁铁粉末的运动的空间中的永久磁铁粉末的填充密度的变化是不会上,不能获得作为本发明中的效果。\n\n【0056】\n\n此外,在专利文献3中,由于在空间中的非常低的密度的粉末平均,端部磁性粉末的取向方向不取向之后固定。因此,还不断向后施加静态磁场,我们必须继续保持取向完成成形。\n\n【0057】\n\n通常,定向磁场可以更高,磁场分布是均匀的想法是公平存在时,本发明中,在改变他们的思维其它根本。\n\n【0058】\n\n在本发明中,其中,所述磁性粉末被填充为取向的空间(待形成的磁场强度的空间分布沿着取向方向改变),通过模具和压力机的上部和下冲头所形成的空腔并且,优选由柔性的模制,例如橡胶或树脂所定义。如上所述,在本发明中,永久磁铁粉末填充到这样的空间密度1.4〜4.2克/厘米3为了填补,在空间永磁粉不能移动的肿块。即,各构成永久磁铁粉末中的粒子的是在微观尺度\n\n因为它也可以一起旋转,如专利文献2描述不能够移动到自由移动,虽然分布或堆积密度时,由于空间的内壁,以限制粉末,在所述空间中的磁性粉末的移动,作为一个肿块。\n\n【0059】\n\n在本发明中施加的磁场是脉冲磁场。在所施加的磁场的强度分布的最大值优选为至少1.0 T.小于的磁场强度的最大值为1.0 T,不期望地变得难以定向永磁铁粉末。的磁场强度的最大值的上限是在这是目前常用的磁化设备的范围内,它可以在考虑所述线圈电源的尺寸和功率消耗来确定。然而,通过使用对准方法根据本发明的梯度场,如在传统的对准方法中,即使不施加高磁场强度,以获得具有甚至在相同的磁特性与以往的永久磁铁相对低的磁场成为可能。换句话说,通过应用常规以及高磁场强度,能够比以前以获得具有显着优异的磁特性的永磁体。\n\n【0060】\n\n根据本发明的取向的方法,通过在梯度执行一个时间,能够根据本发明获得的效果,通过进行两次或更多次(多次),能够进一步提高效果。当执行多次,或改变所施加的磁场的极性与所述第一轮的取向和第二取向,或者是变化的,优选的强度。\n\n【0061】\n\n参照图1,描述其中的不同极性施加的磁场,例如的情况下,第一次时的高场强侧(左侧图中)N极,下侧的磁场强度侧(在图中右侧),作为S极进行第二轮高场强侧的(S极,下侧的磁场强度侧(右侧图中)的比对的左侧的图中),当和N极。在这种情况下,虽然难以移动的永磁体粉末,它是无定向墨粉的取向,提高了永久磁铁粉末的取向度。\n\n【0062】\n\n接着,参照图1,将描述一种情况,其中所施加的磁场的不同的倾斜方向上,高场强侧(左侧图中)N极,下侧的磁场强度侧(右侧在该图),作为S极时一次性取向,第二时间,左侧的图中被设置为一个低的磁场强度,右侧在具有高磁场强度的图。换言之,向上更换负斜率到向右倾斜。在这种情况下,它需要在移动的填充密度和永久磁铁粉末的空间位置变化,永久磁铁粉末的取向度进一步提高。应当指出的是,这个时候,极性可以即使它是切换。\n\n【0063】\n\n而且,反复执行或其中的重复的不同极性或执行不同的倾斜方向的情况下的情况下,也可以通过组合它们反复进行。在这种情况下,最优选的是所述第一方向和与所述第二取向的不同倾斜方向是重复执行它。\n\n【0064】\n\n本发明可以提高永久磁铁粉末的取向的由上述结构的程度描述迄今,该处理前进到填充密度的成形工序是下一个步骤而改变的密度差在模制体的事情变得发生时,虽然磁特性通过提高取向度显著提高,烧结体的变形,可能会导致增加的处理步骤,由于其变形。\n\n【0065】\n\n因此,本发明的取向方法,一次或由多个梯度场,进行取向的磁场的强度的最大位置后的空间分布的长度L,即取向方向的中心施加的磁场,其具有至少以往进行的,由定向一旦一致磁场分布,所以能够在成型体的密度的差异被消除,以烧结体的抑制变形。然而,在这种情况下,如上所述,前磁场施加填充有特定堆积密度,因为经受梯度的取向,和那些通过简单地高磁场强度的均匀磁场定向以均匀的那些由脉冲取向磁场在相比(专利文献2)的磁场反复变换,它是不用说,永久磁铁粉末的取向度得到改进。\n\n【0066】\n\n通过根据本发明的永久磁铁粉末的取向方法取向粉末上面描述由下面的方法成形。\n\n【0067】\n\n如果在具有成型模具灵活的面向永久磁铁粉末优选通过冷进行等静压。如上所述,取向后的永磁体粉末,被固定到在模具中的预定取向方向,磁场施加在成型时基本上不需要。当然,也没有提出通过指向施加磁场成型。\n\n【0068】\n\n当在由模具和加压装置的上,下冲头形成的空腔面向永磁体粉末,形成通过由上下冲头的单轴压缩压力机进行。在这种情况下,也与上述同样地,磁场施加基本上不模塑可以施加磁场过程中所需的。\n\n【0069】\n\n是通过已知的方式烧结成型后的成型体,它是经热处理,形成和烧结磁体。\n\n【0070】\n\n因此,易磁化轴到极限的主相晶粒的取向度提高,有可能获得的永磁体。\n\n【0071】\n\n将所得永久磁铁,烧结体的取向度为92%以上,另外,也可以表达为90%的理论值或者(1.6T)更高的残余磁通密度(Br)。取向度,不是由常规方法得到的剩余磁通密度,它表现出优良的特性。\n\n【例子】\n\n【0072】\n\n(例1)\n\n组成,钕28.5B.1.00CO.0.50CU.0.05AL.0.05溶解其余为Fe(质量%)时,熔融合金被迅速通过带铸方法冷却,得到的合金铸片。合金板的厚度为0.3mm。\n\n【0073】\n\n的合金铸片,氢粉碎,通过脱氢,此外,喷射研磨粗粉碎,并研磨至3微米的平均粒径。\n\n【0074】\n\n然后,将所得细粉碎粉末,直径为25毫米,填充密度为3.5g /厘米橡胶模具高25mm3在填充并与橡胶帽的橡胶模制部密封。\n\n【0075】\n\n定向在图中所示的磁场分布的倾斜的方向(1)的区域3中的橡胶模具。如图3中所示,磁场分布比长度L的磁场强度的最高值(8.0T)位于的取向方向的中心之外(左侧图3),和highest-在最大和从(4.5T)的值强度差远程对准端是3.5T。取向,在根据图倾斜取向的一个时间(第一取向)的磁场分布。3(1),在磁场分布的磁场强度(测量位置31毫米位置分布是相当的相反倾斜的取向(1)是8.0T,在测量位置57.5毫米位置处的磁场强度,通过施加4.5T,1×具有强度差3.5T)(第二取向进行),一个脉冲磁场。\n\n【0076】\n\n然后,将橡胶模具对准之后,通过冷等静压成形后,通过去除橡胶模具,烧结2小时成型体温度1373K,在823K 1小时进行热处理,除去内部的成型体的,至制造烧结磁体。\n\n【0077】\n\n(例2)\n\n在与实施例1中的相同条件下产生烧结磁体,不同之处在于在图1所示的磁场分布的磁场分布的倾斜取向(1)区域中执行一个时间取向。\n\n【0078】\n\n(例3)\n\n图3中所示的磁场分布的倾斜对准(2)区域包括:图3(2)区域(测量位置40mm位置处的磁场强度为7.5 t,测量位置处的磁场强度为67mm位置为2.5 T,强度差是5.0 t)(除了将第一(第二方向)脉冲磁场施加到磁力中的第一方向(第二方向)脉冲磁场中,在与实施例1中相同的条件下的第二烧结磁体倾斜取向的所有分布的场分布(2)。我做了它。\n\n【0079】\n\n(例4)\n\n在与实施例1中的相同条件下产生烧结磁体,不同之处在于在图1所示的磁场分布的倾斜取向(2)区域中执行一个时间取向。\n\n【0080】\n\n比较例1\n\n在与实施例1中的相同条件下产生烧结磁体,不同之处在于在图1所示的磁场分布的中心对准区域中反转极性。\n\n【0081】\n\n比较例2\n\n在与实施例1中的相同条件下产生烧结磁体,不同之处在于在图1所示的磁场分布的中央对准区域中执行一个时间取向。\n\n【0082】\n\n实施例1(1)的实施例1(1),实施例2(1)的实施例2(1),实施例3的实施例3(1)(增加(2)),实施例4(2)■标记)比较例1 (中心的中心)和比较例2(中心中心)的残余磁通密度Br(T)的值。\n\n【0083】\n\n从图1中可以看出。如图4所示,根据本发明的实施例1的磁体,其中第一取向的磁场强度和第二取向的第二取向的磁场强度在倾斜磁场中不同,并且传统形式已定向在均匀磁场中的极性不同。可以看出,与根据比较例1的磁体相比,BR大大提高。此外,根据在倾斜的磁场中进行一次在倾斜磁场中进行的第二实施例的磁体也可以在均匀磁场中取向一次,并且可以看出,可以看出它的传统比较例2到1。\n\n【0084】\n\n此外,应该注意的是,实施例3和实施例4的磁体,其中磁场强度的最大值与低于倾斜度(1)的磁场分布定向,并且第四实施例的磁体高于实施例1和实施例2的磁铁。这就是它的意思。这结果从根本上改变了传统的“磁场分布”的概念,是本发明的主要特征。\n\n【0085】\n\n根据这些结果,即使磁场强度相对较低,也可以通过在倾斜磁场中定向来获得极高的BR。换句话说,如果可以获得相同的BR,则磁场强度可以较低。也就是说,由于可以与现有技术中的磁场对准,因此与现有技术相比,可以实现线圈电源,节能等的小型化。\n\n【0086】\n\n图。图5示出了去磁曲线的平方。应当理解,与常规比较例相比,根据本发明的实施例1和实施例2的磁体非常优异。此外,如在BR的趋势中,实施例3和实施例4的磁体也优于实施例1和实施例2的磁体,也是方形型。\n\n【0087】\n\n这被认为是因为通过倾斜磁场中的方向通过永磁粉末的取向同时发生永磁体粉末的运动。\n\n【工业可用性】\n\n【0088】\n\n本发明广泛地应用于永久磁铁,其中强烈需要高性能。\n\n[简要描述;简介]\n\n【0089】\n\n【图1】图3是表示本发明的永磁体的对准方法的说明图。\n\n【图2】图3是表示本发明的永磁体的对准方法的说明图。\n\n图3.图3是表示磁场分布的说明图。\n\n图4.图3是表示对准方法与BR之间的关系的图。\n\n图5.图3是表示对准方法与退磁曲线的方形之间的关系的图。\n\n6.图3是表示传统永磁体的对准方法的说明图。');
INSERT INTO `os_patent_instruction_text` VALUES (13002, 22831, '【技術分野】\n\n【0001】\n\n本発明は、亜鉛微粒子分散耐食性被膜を表面に有する希土類系永久磁石の安定かつ簡易な製造方法、こうして製造される耐食性希土類系永久磁石、各種形状の薄型ワークに対する塗膜形成に適したディップスピンコーティング法およびワークの塗膜形成方法に関する。\n\n【背景技術】\n\n【0002】\n\nNd-Fe-B系永久磁石に代表されるR-Fe-B系永久磁石やSm-Fe-N系永久磁石に代表されるR-Fe-N系永久磁石などの希土類系永久磁石は、資源的に豊富で安価な材料が用いられ、かつ、高い磁気特性を有していることから、特にR-Fe-B系永久磁石は今日様々な分野で使用されている。\n\nしかしながら、希土類系永久磁石は反応性の高い希土類元素:Rを含むため、大気中で酸化腐食されやすく、何の表面処理をも行わずに使用した場合には、わずかな酸やアルカリや水分などの存在によって表面から腐食が進行して錆が発生し、それに伴って、磁石特性の劣化やばらつきを招く。さらに、錆が発生した磁石を磁気回路などの装置に組み込んだ場合、錆が飛散して周辺部品を汚染する恐れがある。\n\n希土類系永久磁石に耐食性を付与する方法には数多くの方法があるが、その一つとして、珪素化合物を出発原料とした耐食性被膜を希土類系永久磁石の表面に形成する方法がある。近年、このような耐食性被膜の更なる性能向上を目的として種々の研究がなされている。\n\n例えば、下記の特許文献1においては、亜鉛微粒子を分散させたアルカリ珪酸塩水溶液からなる処理液を、希土類系永久磁石の表面に塗布した後、熱処理を行うことで亜鉛微粒子分散耐食性被膜とする方法が提案されている。この方法は、アルカリ珪酸塩を出発原料とした被膜の耐食作用と電位的に卑な亜鉛微粒子の犠牲防食作用を利用したものであり、希土類系永久磁石に高い耐食性を付与することができる方法として期待される。しかしながら、この方法においては、亜鉛微粒子分散耐食性被膜を形成するための処理液中に亜鉛微粒子を均一に分散させておくためには処理液をアルカリ性にしておかなければならないため、処理液を希土類系永久磁石の表面に塗布した際、磁石の表面において磁石を構成する金属の水酸化物が生成し、このような金属水酸化物からなる層で磁石の表面が覆われてしまうことに起因して、密着性に優れた亜鉛微粒子分散耐食性被膜が形成されにくいといった問題や、アルカリ珪酸塩を出発原料とした被膜は柔軟性に劣るためにクラックが生じやすいといった問題や、廃液処理が面倒であるといった問題などがある。\n\nまた、下記の特許文献2においては、珪素有機化合物と平均粒径が1nm〜100nmの無機質微粒子を含有した処理液を、希土類系永久磁石の表面に塗布した後、熱処理を行うことで無機質微粒子分散耐食性被膜とする方法が提案されている。この方法は、珪素有機化合物を出発原料とした薄くて緻密な耐食性被膜を希土類系永久磁石の表面に形成するためのものであり、特定の平均粒径を有する無機質微粒子を被膜成分中に分散させることで、被膜生成過程における被膜内部応力を緩和してクラックなどの物理的欠陥が発生することを防止するものである。この方法も希土類系永久磁石に高い耐食性を付与することができる方法として期待される。しかしながら、ナノメーターオーダーの無機質微粒子は水に均一に分散させることが困難なことなどを考慮すれば、処理液の調製においては、低級アルコールなどの有機溶媒を主体としてそこにわずかな水を添加し、酸性条件下で珪素有機化合物を加水分解重合反応させてゾル液とするとともに無機質微粒子を分散させる必要があり、従って、調製された処理液は酸性であるため、処理液を希土類系永久磁石の表面に塗布した際、磁石の腐食を招くといった問題や、有機溶媒が揮発することで処理液組成が変動しやすく、また、環境に悪影響を与えるといった問題や、廃液処理が面倒であるといった問題などがある。\n\n【特許文献1】特開2000-182813号公報\n\n【特許文献2】特開2001-143949号公報\n\n【発明の開示】\n\n【発明が解決しようとする課題】\n\n【0003】\n\nそこで本発明は、亜鉛微粒子分散耐食性被膜を表面に有する希土類系永久磁石の安定かつ簡易な製造方法、こうして製造される耐食性希土類系永久磁石、各種形状の薄型ワークに対する塗膜形成に適したディップスピンコーティング法およびワークの塗膜形成方法を提供することを目的とする。\n\n【課題を解決するための手段】\n\n【0004】\n\n上記の点に鑑みてなされた本発明の耐食性希土類系永久磁石の製造方法は、請求項1記載の通り、アルキルシリケートの加水分解重合反応物と平均粒径が1μm〜50μmの亜鉛微粒子を含有したpHが6〜8で粘度が1000cP以下の水系処理液を、希土類系永久磁石の表面に塗布した後、250℃〜400℃にて熱処理を行うことで亜鉛微粒子分散耐食性被膜とし、かつ、磁石本体表面から内部に亜鉛を拡散させることを特徴とする。\n\nまた、請求項2記載の製造方法は、請求項1記載の製造方法において、亜鉛微粒子が鱗片状のものであることを特徴とする。\n\nまた、請求項3記載の製造方法は、請求項1または2記載の製造方法において、水系処理液中における出発原料としてのアルキルシリケートと亜鉛微粒子の合計配合割合が40重量%〜90重量%(アルキルシリケートはSiO2換算)であることを特徴とする。\n\nまた、請求項4記載の製造方法は、請求項1乃至3のいずれかに記載の製造方法において、水系処理液中における出発原料としてのアルキルシリケートと亜鉛微粒子の混合比率が1:1〜1:19(重量比:アルキルシリケートはSiO2換算)であることを特徴とする。\n\nまた、請求項5記載の製造方法は、請求項1乃至4のいずれかに記載の製造方法において、水系処理液中に有機分散剤を添加することを特徴とする。\n\nまた、請求項6記載の製造方法は、請求項1乃至5のいずれかに記載の製造方法において、亜鉛微粒子分散耐食性被膜の膜厚が1μm〜50μmであることを特徴とする。\n\nまた、請求項7記載の製造方法は、請求項1乃至6のいずれかに記載の製造方法において、亜鉛微粒子分散耐食性被膜中に他の無機質微粒子をさらに分散させることを特徴とする。\n\nまた、請求項8記載の製造方法は、請求項1乃至7のいずれかに記載の製造方法において、水系処理液の希土類系永久磁石の表面への塗布をディップスピンコーティング法で行うことを特徴とする。\n\nまた、請求項9記載の製造方法は、請求項8記載の製造方法において、粘度が300cP〜600cPの水系処理液を用いて行うことを特徴とする。\n\nまた、請求項10記載の製造方法は、請求項8または9記載の製造方法において、鉛直方向の中心軸を回転軸として回転可能な回転台座の略外周端部上に、複数個の希土類系永久磁石を保持し、希土類系永久磁石が保持された回転台座を水系処理液槽に浸漬することで希土類系永久磁石に水系処理液を浸漬塗装した後、液中から取り出し、回転台座を回転させて希土類系永久磁石に余分に付着した水系処理液を遠心振り切りすることでディップスピンコーティングを行うことを特徴とする。\n\nまた、請求項11記載の製造方法は、請求項10記載の製造方法において、複数個の希土類系永久磁石を回転台座の略外周端部上に略環状に保持することを特徴とする。\n\nまた、請求項12記載の製造方法は、請求項10または11記載の製造方法において、希土類系永久磁石が薄型磁石であることを特徴とする。\n\nまた、請求項13記載の製造方法は、請求項12記載の製造方法において、薄型磁石をその最も広い面が回転台座の放射状方向に対して略平行になるように保持することを特徴とする。\n\nまた、請求項14記載の製造方法は、請求項13記載の製造方法において、回転台座の略外周端部上に装着した際、複数個の薄型磁石を個々の磁石が離間した状態でその最も広い面が回転台座の放射状方向に対して略平行になるように略環状にセットすることができ\n\nる塗装治具を用いて行うことを特徴とする。\n\nまた、請求項15記載の製造方法は、請求項12記載の製造方法において、薄型磁石が平板状、リング状、弓形状のいずれかの形状であることを特徴とする。\n\nまた、請求項16記載の製造方法は、請求項14記載の製造方法において、ディップスピンコーティングを行った後、薄型磁石がセットされたままの塗装治具を回転台座から取り外し、任意の場所で塗装治具にセットされたままの薄型磁石を熱処理することを特徴とする。\n\nまた、本発明の希土類系永久磁石は、請求項17記載の通り、アルキルシリケートを出発原料とした被膜成分中に平均粒径が1μm〜50μmの亜鉛微粒子を分散させた耐食性被膜を表面に有し、かつ、磁石本体表面から内部に亜鉛が拡散していることを特徴とする。\n\nまた、請求項18記載の希土類系永久磁石は、請求項17記載の希土類系永久磁石において、耐食性被膜の亜鉛微粒子含有量が50重量%〜95重量%であることを特徴とする。\n\n  また、請求項19記載の希土類系永久磁石は、請求項17または18記載の希土類系永久磁石において、請求項1記載の製造方法により製造されたことを特徴とする。\n\n【発明の効果】\n\n【0005】\n\n本発明によれば、亜鉛微粒子分散耐食性被膜を表面に有する希土類系永久磁石の安定かつ簡易な製造方法、こうして製造される耐食性希土類系永久磁石、各種形状の薄型ワークに対する塗膜形成に適したディップスピンコーティング法およびワークの塗膜形成方法が提供される。\n\n【発明を実施するための最良の形態】\n\n【0006】\n\n本発明において、亜鉛微粒子分散耐食性被膜は、アルキルシリケートの加水分解重合反応物と平均粒径が1μm〜50μmの亜鉛微粒子を含有したpHが6〜8で粘度が1000cP以下の水系処理液を、希土類系永久磁石の表面に塗布した後、250℃〜400℃にて熱処理を行うことで形成される。このようにして形成された亜鉛微粒子分散耐食性被膜は、希土類系永久磁石に高い耐食性を付与するものであるとともに、磁石本体表面から内部に亜鉛が拡散していることで密着性に優れる。\n\n【0007】\n\nここで、アルキルシリケートとしては、一般式:SinO(n-1)(OR)(2n+2)で示されるものが用いられる。式中、Rはアルキル基であり、メチル基、エチル基、プロピル基、ブチル基などの炭素数1〜4の低級アルキル基が例示されるが、中でも、安価であることに加えて毒性がなく取り扱い性に優れたエチル基(エチルシリケート)が好適である。また、nは1以上の整数であるが、緻密な被膜を形成するためにはnは10以下の整数であることが望ましい。\n\n【0008】\n\nまた、亜鉛微粒子は、平均粒径が1μm〜50μmのものが用いられる。これは、平均粒径が1μmよりも小さいと、水系処理液中で亜鉛微粒子が二次凝集を起こす恐れがある一方、平均粒径が50μmよりも大きいと、水系処理液中で亜鉛微粒子が沈降する恐れがあり、いずれの場合においても保存安定性に優れた亜鉛微粒子が均一に分散した水系処理液を調製することが困難になる恐れがあるからである。なお、亜鉛微粒子の平均粒径は、2μm〜30μmが望ましく、5μm〜20μmがより望ましい。亜鉛微粒子はいかなる形状のものであってもよいが、亜鉛微粒子分散耐食性被膜にピンホールが極力発生しないようにするためには、亜鉛微粒子は被膜成分中に高密度に積層充填されることが有利であり、また、磁石本体表面から内部に亜鉛を拡散させるためには磁石本体に対する亜鉛微粒\n\n子の接触面積は広いことが有利である。従って、かかる観点からは、亜鉛微粒子は鱗片状のものが望ましい。亜鉛微粒子が鱗片状のものである場合、亜鉛微粒子の平均粒径とは平均長径を意味するものとする。\n\n【0009】\n\n水系処理液中における出発原料としてのアルキルシリケートと亜鉛微粒子の合計配合割合は、40重量%〜90重量%(アルキルシリケートはSiO2換算)とすることが望ましく、60重量%〜80重量%とすることがより望ましい。合計配合割合が40重量%未満であると、十分な特性を発揮する膜厚を有する亜鉛微粒子分散耐食性被膜を得るためには製造工程回数を必要以上に増やさなければならなくなる恐れがある一方、90重量%を超えると、水系処理液の保存安定性に影響を及ぼす恐れがあるからである。\n\n【0010】\n\n水系処理液中における出発原料としてのアルキルシリケートと亜鉛微粒子の混合比率は、形成される亜鉛微粒子分散耐食性被膜の亜鉛微粒子含有量が50重量%〜95重量%になるように、1:1〜1:19(重量比:アルキルシリケートはSiO2換算)とすることが望ましく、1:3〜1:10とすることがより望ましい。形成される亜鉛微粒子分散耐食性被膜の亜鉛微粒子含有量が50重量%より少ないと、被膜成分中に亜鉛微粒子を分散させることの効果が十分に発揮されない恐れがある一方、95重量%より多いと、アルキルシリケートを出発原料とする耐食性被膜としての本来的な特性が十分に発揮されない恐れがあるからである。\n\n【0011】\n\n希土類系永久磁石の表面に塗布する水系処理液のpHを6〜8と規定するのは、pHが6より小さいと、上記の特許文献2に記載したように希土類系永久磁石の腐食を招く恐れがある一方、pHが8より大きいと、上記の特許文献1に記載したように密着性に優れた亜鉛微粒子分散耐食性被膜が形成されない恐れがあるからである。\n\n【0012】\n\n希土類系永久磁石の表面に塗布する水系処理液の粘度を1000cP以下と規定するのは、水系処理液の粘度が1000cPを超えると、膜厚が均一な亜鉛微粒子分散耐食性被膜を形成することが困難になる恐れがあるからである。\n\n【0013】\n\n均質性に優れた水系処理液の調製は、例えば、酸性条件下(pH3〜4程度)または塩基性条件下(pH10〜12程度)でアルキルシリケートを加水分解重合反応させた水溶液に平均粒径が1μm〜50μmの亜鉛微粒子を添加した後、pHを6〜8に調整するとともに粘度を100cP以下に維持または調整することで行うことが望ましい(粘度は50cP以下がより望ましく25cP以下がさらに望ましい)。なお、酸性条件下でアルキルシリケートを加水分解重合反応させた場合、pHの調整は、例えば、水酸化ナトリウムなどを用いて行えばよい。また、塩基性条件下でアルキルシリケートを加水分解重合反応させた場合、pHの調整は、例えば、塩酸などを用いて行えばよい。\n\n【0014】\n\n水系処理液の調製の段階でアルキルシリケートを加水分解重合反応させておくのは、形成される被膜を緻密なものにするためである。アルキルシリケートの加水分解重合反応は、用いるアルキルシリケートの全てを加水分解重合反応させる必要は必ずしもなく、その一部を加水分解重合反応させるような態様であってもよい。加水分解重合反応の程度は、酸や塩基の添加量や加水分解重合反応を起こすに際して使用する媒体としての水の量にて調整することができる。アルキルシリケートの加水分解重合反応の程度が高いと、水溶液の粘度が100cPを超える場合がある。いったん粘度が100cPを超えた場合であっても加温水を添加するなどすれば粘度の低下を図ることも可能ではあるが、水系処理液のより優れた均質性を確保するためには、加水分解重合反応時に水溶液の粘度が100cPを超えそうな場合には、適宜、水を添加するなどしてその粘度が100cPを越えないようにすることが望ましい。なお、所望する膜厚の被膜が形成されやすくすることを目的として水系処理液の表面張力を適度なものにしたい場合などには、例えば、水系処理液中に\n\nセルロース系の増粘剤(ヒドロキシエチルセルロース、メチルセルロース、メチルヒドロキシプロピルセルロース、エチルヒドロキシエチルセルロース、メチルエチルセルロースなどが例示される水溶性セルロースエーテルなど)などを添加することで、その粘度を調整することができる。形成される被膜の膜厚を厚くすることなどを目的として水系処理液の粘度を100cP以上にしたい場合には、いったん調製した水系処理液中に増粘剤を添加して粘度を高めることによって行うことが望ましい。\n\n【0015】\n\nアルキルシリケートを加水分解重合反応させた水溶液に亜鉛微粒子を添加するに際しては、有機分散剤を用いて、水系処理液中で亜鉛微粒子が均一に分散するようにすることが望ましい。水系処理液中への有機分散剤の添加は、例えば、有機分散剤を添加した水に亜鉛微粒子を投入することで亜鉛微粒子が均一に分散した亜鉛微粒子分散水系媒体を調製し、この亜鉛微粒子分散水系媒体とアルキルシリケートを加水分解重合反応させた水溶液を混合することで行えばよい。なお、有機分散媒としては、アニオン性分散媒(脂肪族系多価カルボン酸、ポリエーテルポリエステルカルボン酸塩、高分子ポリエステル酸ポリアミン塩、高分子量ポリカルボン酸長鎖アミン塩など)、非イオン性分散媒(ポリオキシエチレンアルキルエーテルやソルビタンエステルなどのカルボン酸塩やスルフォン酸塩やアンモニウム塩など)、高分子分散媒(水溶性エポキシのカルボン酸塩やスルフォン酸塩やアンモニウム塩など、スチレン-アクリル酸共重合物、ニカワなど)などが亜鉛微粒子との親和性やコストの点から好適に使用される。\n\n【0016】\n\nなお、希土類系永久磁石の表面に塗布する水系処理液の粘度は、十分な特性を発揮する膜厚を有する亜鉛微粒子分散耐食性被膜を必要以上の製造工程回数を繰り返すことなく形成するためには、5cP以上であることが望ましい。\n\n【0017】\n\n希土類系永久磁石の表面に水系処理液を塗布するに際しては、ディップコーティング法、スプレー法、スピンコーティング法、ディップスピンコーティング法などを採用することができる。なお、希土類系永久磁石の表面に形成される亜鉛微粒子分散耐食性被膜との密着性の向上を図るため、水系処理液を塗布する前に磁石に対してサンドブラスト処理や酸洗処理を施してもよい。\n\n【0018】\n\n水系処理液の希土類系永久磁石の表面への塗布は、より均一な水系処理液の塗膜が形成されるようにするためには、ディップスピンコーティング法で行うことが望ましい。とりわけ、鉛直方向の中心軸を回転軸として回転可能な回転台座の略外周端部上に、複数個の希土類系永久磁石を保持し、希土類系永久磁石が保持された回転台座を水系処理液槽に浸漬することで希土類系永久磁石に水系処理液を浸漬塗装した後、液中から取り出し、回転台座を回転させて希土類系永久磁石に余分に付着した水系処理液を遠心振り切りすることでディップスピンコーティングを行うことが望ましい。\n\n【0019】\n\n薄型ワークの表面に、膜厚が例えば10μm程度の薄い塗膜を形成する方法として、ワークを塗料槽に浸漬することでワークに塗料を浸漬塗装した後、液中から取り出し、高速回転させて余分に付着した塗料を振り切ることによるディップスピンコーティング法が採用されることがある。これまでに知られている薄型ワークのディップスピンコーティング法としては、例えば、特開平7-201088号公報に光ディスクの保護膜塗布方法として提案されているものがある。この方法は、水平主軸に複数個の基板を一定間隔に垂直にセットし、主軸を中心に低速回転させながら基板の中心部以外を保護膜材料に浸漬して該材料を塗布した後、該材料から引き上げ、最後に高速回転させて該材料を振り切ることによるものである。また、特開平3-86271号公報においては、ハンガーを用いて被塗物の塗布面(平面)をほぼ水平に保持した状態で、ハンガーと被塗物を含む全体の重心を通る鉛直線を回転軸として回転させて塗料を遠心振り切りする工程を含むことを特徴とするディップスピンコーティング法が提案されている。また、特開2000-164556\n\n号公報においては、複数の溝を有する一対の保持部材を溝を有する側を対向させ、この対向する溝でウエハの周辺を保持するようにしたウエハキャリアを用い、キャリアをその溝が略回転加速度方向に向くように回転させてキャリアに保持した複数個のウエハ上の液体を遠心振り切り乾燥する方法が提案されている。\n\n【0020】\n\n大量の薄型ワークに対してディップスピンコーティング法を採用する場合、ワークの形状にとらわれることなく、全てのワークに対して膜厚のばらつきを生じさせないで均一な塗装ができることが望ましい。しかしながら、この点に鑑みれば、上記の特許文献に記載のいずれの方法も多かれ少なかれ欠点を有する。具体的には、特開平7-201088号公報に記載の方法では、ワークをその中心部で保持しなければならないので、リング状ワークにしか適用することができないといった欠点がある。また、この方法では、リング状ワークの内周面に水平主軸を当接させ、両者間に発生する摩擦力でワーク自体を回転させるため、ワークと主軸との間に発生する摩擦力にばらつきがあると、ワークの回転速度がばらつくので、全てのワークに対して均一な塗装ができない恐れがあるといった欠点や、ワークを高速回転させることが困難であるため、粘性が高い塗料(例えば粘度が500cPを超えるようなもの)をワークに塗装する場合には、余分に付着した塗料を十分に振り切ることができない恐れがあるといった欠点がある。また、特開平3-86271号公報に記載の方法では、ワークの平面をほぼ水平に保持するので、上面と下面との間で塗料の付着量に差異が生じる恐れがあるといった欠点がある。また、特開2000-164556号公報に記載の方法では、ワークの一方の平面が回転軸に対向して保持されるので、保持位置によってワークごとにその回転速度が異なることから、全てのワークに対して均一な塗装ができない恐れがあるといった欠点がある。\n\n【0021】\n\nしかしながら、本発明において提案するディップスピンコーティング法によれば、大量の薄型ワークに対しても膜厚のばらつきを生じさせないで均一な塗膜形成ができる。\n\n【0022】\n\n以下、本発明において提案するディップスピンコーティング法を、必要に応じて図面を参照しながら説明するが、本発明において提案するディップスピンコーティング法は以下の記載に何ら限定して解釈されるものではない。本発明において提案するディップスピンコーティング法は、ワークの形状にとらわれることなく、あらゆる形状のワークの塗装に適用することができるが、とりわけ平板状やリング状や弓形状などの薄型ワークの塗装に好適であるので、以下の説明においては、本発明の方法を平板状ワークとリング状ワークの塗装に適用する場合を例にとる。\n\n【0023】\n\n図1は、本発明において提案するディップスピンコーティング法の一例の概略工程図である。その工程を順を追って説明すると、(a)まず、鉛直方向の中心軸1を回転軸として回転可能な回転台座2の略外周端部上に、複数個の平板状ワークXを、その個々の最も広い面(平面)が放射状方向に略平行になるように略環状に保持する。(b)次に、エアシリンダ3により塗料槽4を上昇させてワークXが保持された回転台座2を塗料槽4に浸漬することでワークXに塗料を浸漬塗装する。(c)次に、エアシリンダ3により塗料槽4を下降させて回転台座2を液中から取り出す。(d)最後に、回転台座2をモータ5により中心軸1を回転軸として回転させて(少なくとも1回は回転方向を逆転することが望ましい)、ワークXの平面に余分に付着した塗料を遠心振り切りする。この方法によれば、粘性が比較的高い塗料(例えば粘度が200cPを超えるようなもの)であっても、回転台座2の大きさを調整したり回転速度を制御したりすることで、ワークXの平面への塗料の付着量を自在に調整することができることから、形成される塗膜の膜厚も自在に調整することができる。\n\n【0024】\n\nなお、回転台座2の台座面は、塗料溜りができたりしないように、メッシュ状であることが望ましい。\n\n【0025】\n\n図2(a)は、回転台座2の略外周端部上に、複数個の平板状ワークXを、その個々の平面が放射状方向に略平行になるように略環状に保持した状態の一例の概略部分斜視図である。図2(b)は、ワークXを保持した回転台座2をその上方から見た図である。ワークXは、回転台座2に敷設された2本の保持部材(断面が半円の棒状のものが望ましい)11上に載置される。ワークXは、図1に示したように、回転台座2上に直に載置してもよいが、このような載置方法を採用することで、ワークXの下面に生じる載置跡を極小化することができる(図2(c)参照)。\n\n【0026】\n\n個々の平板状ワークXは、保持部材11に対して鉛直方向に設けられたスペーサ12によって離間した状態で保持される。なお、スペーサ12はワークXの横転を防止する機能も併せ持つ。隣接するスペーサ12とスペーサ12の間隔は、ワークXの厚みよりも広いことが望ましい。常にワークXの両面にスペーサ12が当接していると、その当接跡が顕著になるからである。また、スペーサ12の断面は円形であることが望ましい。回転台座2を回転させることによってワークXの平面に生じる当接跡を極小化することができるからである。\n\n【0027】\n\n工程(d)において、回転台座2をモータ5により中心軸1を回転軸として回転させて平板状ワークXの平面に余分に付着した塗料を遠心振り切りする際、ワークXは、遠心力により放射状方向に飛び出そうとするが、図略の構成によって回転台座2に固定され、水平方向に配置された遠心飛び出し規制棒13は、ワークXの外側側面に当接してワークXの放射状方向への飛び出しを規制する働きを有する。また、遠心飛び出し規制棒13に対して回転軸方向に設けられたスペーサ14は、遠心振り切り中のワークXの動きを規制する働きを有する。\n\n【0028】\n\n図3(a)は、回転台座2の略外周端部上に、複数個のリング状ワークYを、その個々の平面が放射状方向に略平行になるように略環状に保持した状態の一例の概略部分斜視図である。ワークYは、図略の構成によって回転台座2に固定された水平吊掛部材15に、そのリング部にて吊り掛けられて保持される。水平吊掛部材15は、断面が円形の棒状のものが望ましい。また、水平吊掛部材15のワークYが吊り掛けられる部分は、例えばV字型に切り欠いておくことが望ましい(図3(b)参照)。水平吊掛部材15をこのような構成とすることで、ワークYのリング部に生じる吊掛跡を極小化することができる。\n\n【0029】\n\n複数個の薄型ワークにディップスピン塗装を行うに際しては、図1〜図3に示したように、薄型ワークの1個1個を直接的に回転台座に保持させてもよいが、回転台座の略外周端部上に装着した際、複数個の薄型ワークを個々のワークが離間した状態でその最も広い面が回転台座の放射状方向に対して略平行になるように略環状にセットすることができる塗装治具を用いてもよい。\n\n【0030】\n\n図4は、回転台座の略外周端部上に装着した際、複数個の平板状ワークを個々のワークが離間した状態でその平面が回転台座の放射状方向に対して略平行になるように略環状にセットすることができる塗装治具の一例の概略斜視図である。この塗装治具Zは、複数個の平板状ワークXを個々のワークが離間した状態でその平面が鉛直方向に略平行になるように保持するための、水平方向に平行配置された、2本の、スペーサ22付き保持棒21と、ワークXがセットされた治具を回転台座の略外周端部上に装着して回転台座を回転させた際に、ワークXの外側側面に当接して遠心力による放射状方向へのワークXの飛び出しを規制するための、水平方向に平行配置された、スペーサ24付き遠心飛び出し規制棒23を少なくとも有してなるが、保持棒21の上方に、治具を上下反転させた際に、複数個のワークXを個々のワークが離間した状態でその平面が鉛直方向に略平行になるように、かつ、ワークXの上部が保持棒21と空間を存するように保持するための、保持棒21\n\nに平行配置された、2本の、スペーサ26付き棒状部材25をさらに有してなる。ワークXを上段にて保持するための保持棒21は、治具を上下反転させた際に、棒状部材25として機能する。\n\n【0031】\n\n図5は、複数個の薄型ワークXをセットした塗装治具Zの概略正面図(a)とD-D断面図(b)である。\n\n【0032】\n\n保持棒21と棒状部材25は、断面が円形であることが望ましい。薄型ワークXの下面に生じる載置跡を極小化することができるからである。また、遠心飛び出し規制棒23も、断面が円形であることが望ましい。薄型ワークXの外側側面に生じる当接跡を極小化することができるからである。また、スペーサ22とスペーサ24とスペーサ26も、断面が円形であることが望ましい。薄型ワークXの平面に生じる当接跡を極小化することができるからである。なお、保持棒21と棒状部材25は、必ずしも2本必要であるわけではなく、1本であってもよい。\n\n【0033】\n\n図4に示した塗装治具Zは、例えば、次のようにして用いられる。図6は、自体公知の着脱自在な装着手段により、複数個の平板状ワークXをセットした塗装治具Zを、回転台座2の略外周端部上に装着した状態の一例の概略部分平面図である。図1に示した概略工程図に従って、エアシリンダ2により塗料槽4を上昇させてワークXをセットした塗装治具Zを装着した回転台座2を塗料槽4に浸漬することでワークXに塗料を浸漬塗装する。次に、エアシリンダ3により塗料槽4を下降させて回転台座2を液中から取り出す。最後に、回転台座2をモータ5により中心軸1を回転軸として回転させてワークXの平面に余分に付着した塗料を遠心振り切りすることでディップスピン塗装を完了する。任意時間経過後、ワークXがセットされたままの塗装治具Zを回転台座2から取り外し、任意の場所で塗装治具ZにセットされたままのワークXを所望により乾燥処理(自然乾燥または加熱乾燥)する。その後、ワークXがセットされたままの塗装治具Zを上下反転させて再び回転台座2に装着し、ディップスピン塗装を前記と同様の工程にて再び行う。このようにすれば、1回目の塗装と2回目の塗装とでは、ワークXに生じる載置跡や当接跡の位置が変わるので、2回目の塗装により、1回目の塗装でワークXに生じた載置跡や当接跡にも塗装が行われることから、ワークXに対してより均一な塗装を行うことができる。その後、ワークXがセットされたままの塗装治具Zを回転台座2から取り外し、任意の場所で塗装治具ZにセットされたままのワークXを所望により乾燥処理(自然乾燥または加熱乾燥)すれば、大量のワークに対しても膜厚のばらつきを生じさせないで均一な塗膜形成を効率よく行うことができる。\n\n【0034】\n\nなお、水系処理液の希土類系永久磁石の表面への塗布をディップスピンコーティング法で行う場合、粘度が300cP〜600cPの水系処理液を用いることで、より均一な塗膜形成を行うことができる。このような粘度の水系処理液は、上述したように、いったん調製した水系処理液中にセルロース系の増粘剤などを添加することで粘度を高めたものであることが望ましい(増粘剤は水系処理液中に1重量%〜2重量%含まれるように添加することが望ましい)。\n\n【0035】\n\n表面に水系処理液の塗膜が形成された希土類系永久磁石の熱処理は、250℃〜400℃にて行う。このような温度条件にて熱処理を行うと、水系処理液中に含まれる亜鉛微粒子の一部が、被膜生成過程において、磁石本体表面から内部に適度に拡散することで、密着性に優れた亜鉛微粒子分散耐食性被膜が形成される。熱処理の温度が250℃よりも低いと、このような亜鉛の拡散が十分に起こらないばかりか、水が十分に蒸発せずに希土類系永久磁石の表面に残存することで、その後において磁石の腐食を招く恐れがある一方、400℃よりも高いと、亜鉛の拡散が必要以上に起こることで磁石特性に悪影響を及ぼす恐れがある。熱処理の時間は、例えば、10分〜120分が望ましい。なお、水系処理液\n\nを表面に塗布した希土類系永久磁石をいったん100℃〜170℃で仮乾燥してから熱処理を行うことで、より均質な亜鉛微粒子分散耐食性被膜を形成することができる。\n\n【0036】\n\n亜鉛微粒子分散耐食性被膜は、その膜厚が1μm〜50μmとなるように形成することが望ましく、5μm〜15μmとなるように形成することがより望ましい。膜厚が1μm未満であると、亜鉛微粒子分散耐食性被膜としての特性が十分に発揮されない恐れがある一方、膜厚が50μmを超えると、希土類系永久磁石の有効体積が十分に確保することができなくなる恐れがあるからである。\n\n【0037】\n\nなお、亜鉛微粒子分散耐食性被膜中に他の無機質微粒子をさらに分散させてもよい。無機質微粒子としては、例えば、アルミニウム、錫、マンガン、マグネシウム、チタン、ニッケルなどの亜鉛と同様に電位的に卑な金属の微粒子が挙げられる。例えば、亜鉛微粒子とともにアルミニウム微粒子を分散させることで、亜鉛微粒子の腐食による白錆(塩基性炭酸亜鉛)の生成を効果的に防止することができる。また、被膜に発生しうるピンホールをより低減化し、被膜の耐食性をより高めるために、被膜中に亜鉛微粒子とともにAl2O3やTiO2やSiO2やマイカなどの酸化物微粒子を分散させてもよい。亜鉛微粒子とともに他の無機質微粒子を分散させる場合、形成される耐食性被膜の亜鉛微粒子と他の無機質微粒子の合計含有量は、95重量%以下であることが望ましい。\n\n【0038】\n\n希土類系永久磁石としては、Nd-Fe-B系永久磁石に代表されるR-Fe-B系永久磁石やSm-Fe-N系永久磁石に代表されるR-Fe-N系永久磁石などの公知の希土類系永久磁石が挙げられる。中でも、R-Fe-B系永久磁石は、特に磁気特性が高く、量産性や経済性に優れている点において望ましいものである。希土類系永久磁石は、焼結磁石であってもよいしボンド磁石であってもよい。\n\n希土類系永久磁石における希土類元素(R)は、Nd、Pr、Dy、Ho、Tb、Smのうち少なくとも1種、あるいはさらに、La、Ce、Gd、Er、Eu、Tm、Yb、Lu、Yのうち少なくとも1種を含むものが望ましい。\n\nまた、通常はRのうち1種をもって足りるが、実用上は2種以上の混合物(ミッシュメタルやジジムなど)を入手上の便宜などの理由によって使用することもできる。\n\nさらに、Al、Ti、V、Cr、Mn、Bi、Nb、Ta、Mo、W、Sb、Ge、Sn、Zr、Ni、Si、Zn、Hf、Gaのうち少なくとも1種を添加することで、保磁力や減磁曲線の角型性の改善、製造性の改善、低価格化を図ることが可能となる。また、Feの一部をCoで置換することによって、得られる磁石の磁気特性を損なうことなしに温度特性を改善することができる。\n\n【実施例】\n\n【0039】\n\n以下、本発明を実施例と比較例によってさらに詳細に説明するが、本発明はこれに限定して解釈されるものではない。\n\n【0040】\n\n実施例1:\n\n出発原料として、電解鉄、フェロボロン、RとしてのNdを所要の磁石組成に配合し、溶解鋳造後、機械的粉砕法にて粗粉砕してから微粉砕することで粒度が3μm〜10μmの微粉末を得、これを10kOeの磁界中で成形してからアルゴン雰囲気中で1100℃×1時間の焼結を行った後、得られた焼結体に対して600℃×2時間の時効処理を行い、15Nd-7B-78Feの組成を有する磁石体から切り出した36mm×32mm×3mm寸法の平板状焼結磁石試験片を用いて以下の実験を行った。\n\n【0041】\n\nA.  エチルシリケート40(エチルシリケートをSiO2換算で40重量%含有する無色透明液体)に水を添加し、1N塩酸でpHを3に調整することでエチルシリケートを加水分解重合反応させ、出発原料としてのエチルシリケートを20重量%(SiO2換算)\n\n含有する水溶液を調製した。この水溶液と、有機分散剤(商品名ソルスパースS20000:アビシア社製)と平均長径が20μmの鱗片状亜鉛微粒子(概寸法20μm×20μm×1μm)を水に添加して調製した亜鉛微粒子分散水系媒体を混合し、よく攪拌して1N水酸化ナトリウムでpHを7に調整し、出発原料としてのエチルシリケートと亜鉛微粒子の合計配合割合が70重量%(エチルシリケートはSiO2換算)で、出発原料としてのエチルシリケートと亜鉛微粒子と有機分散剤の混合比率が、9.9:90:0.1(重量比:エチルシリケートはSiO2換算)である粘度が15cPの水系処理液を得た。\n\nB.  エタノールにて超音波洗浄(脱脂処理)してから15分間自然乾燥させた試験片を上記の水系処理液に浸漬した。水系処理液から取り出した試験片を遠心乾燥機に収容し、300rpmにて30秒間振り切りすることで試験片の表面に付着している余分な水系処理液を除去した後、100℃×5分間大気中にて仮乾燥した。こうして表面に塗布した水系処理液を仮乾燥させた試験片を再度水系処理液に浸漬した。水系処理液から取り出した試験片の表面に付着している余分な水系処理液を上記と同様にして除去した後、表面に水系処理液の塗膜が形成された試験片に対して320℃×10分間大気中にて熱処理を行い、試験片の表面に亜鉛微粒子含有量が90重量%の亜鉛微粒子分散耐食性被膜を形成した。形成された亜鉛微粒子分散耐食性被膜の膜厚は約10μmであった(断面観察より)。\n\nC.  こうして製造された亜鉛微粒子分散耐食性被膜を表面に有する試験片10個に対して35℃の5%塩水を500時間噴霧するという耐食性試験を行ったが、試験後において外観変化(発錆)を来したものはなかった。\n\n【0042】\n\n実施例2:\n\n実施例1と同様にして調製した出発原料としてのエチルシリケートを20重量%(SiO2換算)含有するpHが3の水溶液と、有機分散剤(商品名ソルスパースS20000:アビシア社製)と平均長径が20μmの鱗片状亜鉛微粒子(概寸法20μm×20μm×1μm)と平均粒径が3μmの粒状アルミニウム微粒子を水に添加して調製した亜鉛·アルミニウム微粒子分散水系媒体を混合し、よく攪拌して1N水酸化ナトリウムでpHを7に調整し、出発原料としてのエチルシリケートと亜鉛微粒子とアルミニウム微粒子の合計配合割合が70重量%(エチルシリケートはSiO2換算)で、出発原料としてのエチルシリケートと亜鉛微粒子とアルミニウム微粒子と有機分散剤の混合比率が、9.9:60:30:0.1(重量比:エチルシリケートはSiO2換算)である粘度が13cPの水系処理液を得た。この水系処理液を用いて実施例1と同様の試験片の表面に実施例1と同様にして亜鉛微粒子含有量が60重量%でアルミニウム微粒子含有量が30重量%の亜鉛·アルミニウム微粒子分散耐食性被膜を形成した。形成された亜鉛·アルミニウム微粒子分散耐食性被膜の膜厚は約10μmであった(断面観察より)。こうして製造された亜鉛·アルミニウム微粒子分散耐食性被膜を表面に有する試験片10個に対して実施例1と同様の耐食性試験を行ったが、試験後において外観変化(発錆)を来したものはなかった。\n\n【0043】\n\n実施例3:\n\n実施例1と同様にして調製した出発原料としてのエチルシリケートを20重量%(SiO2換算)含有するpHが3の水溶液と、有機分散剤(商品名ソルスパースS20000:アビシア社製)と平均長径が20μmの鱗片状亜鉛微粒子(概寸法20μm×20μm×1μm)と平均粒径が3μmの粒状アルミニウム微粒子と平均粒径が3μmの粒状錫微粒子を水に添加して調製した亜鉛·アルミニウム·錫微粒子分散水系媒体を混合し、よく攪拌して1N水酸化ナトリウムでpHを7に調整し、出発原料としてのエチルシリケートと亜鉛微粒子とアルミニウム微粒子と錫微粒子の合計配合割合が70重量%(エチルシリケートはSiO2換算)で、出発原料としてのエチルシリケートと亜鉛微粒子とアルミニウム微粒子と錫微粒子と有機分散剤の混合比率が、9.9:55:25:10:0.1(重量比:エチルシリケートはSiO2換算)である粘度が18cPの水系処理液を得た。この水系処理液を用いて実施例1と同様の試験片の表面に実施例1と同様にして亜鉛微粒\n\n子含有量が55重量%でアルミニウム微粒子含有量が25重量%で錫微粒子含有量が10重量%の亜鉛·アルミニウム·錫微粒子分散耐食性被膜を形成した。形成された亜鉛·アルミニウム·錫微粒子分散耐食性被膜の膜厚は約10μmであった(断面観察より)。こうして製造された亜鉛·アルミニウム·錫微粒子分散耐食性被膜を表面に有する試験片10個に対して実施例1と同様の耐食性試験を行ったが、試験後において外観変化(発錆)を来したものはなかった。\n\n【0044】\n\n比較例1:\n\nA.  SiO2/Na2Oが4.0でpHが12のアルカリ珪酸ナトリウム水溶液を調製した。この水溶液と、有機分散剤(商品名ソルスパースS20000:アビシア社製)と平均長径が20μmの鱗片状亜鉛微粒子(概寸法20μm×20μm×1μm)を水に添加して調製した亜鉛微粒子分散水系媒体を混合し、よく攪拌して、出発原料としてのアルカリ珪酸ナトリウムと亜鉛微粒子の合計配合割合が70重量%(アルカリ珪酸ナトリウムはSiO2換算)で、出発原料としてのアルカリ珪酸ナトリウムと亜鉛微粒子と有機分散剤の混合比率が、9.9:90:0.1(重量比:アルカリ珪酸ナトリウムはSiO2換算)である処理液を得た。\n\nB.  エタノールにて超音波洗浄(脱脂処理)してから15分間自然乾燥させた実施例1と同様の試験片を上記の処理液に浸漬した。処理液から取り出した試験片を遠心乾燥機に収容し、300rpmにて30秒間振り切りすることで試験片の表面に付着している余分な処理液を除去した後、100℃×5分間大気中にて仮乾燥した。こうして表面に塗布した処理液を仮乾燥させた試験片を再度処理液に浸漬した。処理液から取り出した試験片の表面に付着している余分な処理液を上記と同様にして除去した後、表面に処理液の塗膜が形成された試験片に対して150℃×30分間大気中にて熱処理を行い、試験片の表面に亜鉛微粒子含有量が90重量%の亜鉛微粒子分散耐食性被膜を形成した。形成された亜鉛微粒子分散耐食性被膜の膜厚は約10μmであった(断面観察より)。\n\nC.  こうして製造された亜鉛微粒子分散耐食性被膜を表面に有する試験片10個に対して35℃の5%塩水を500時間噴霧するという耐食性試験を行ったところ、200時間経過時点において外観変化(発錆)を来したものが7個存在した。\n\n【0045】\n\n実施例4:\n\n急冷合金法で作製した、Nd:12原子%、Fe:77原子%、B:6原子%、Co:5原子%の組成からなる平均長径150μmの合金粉末にエポキシ樹脂を2wt%加えて混練し、686N/mm2の圧力で圧縮成形した後、150℃で1時間キュアすることによって作製した、外径30mm×内径28mm×長さ4mmのリング状ボンド磁石試験片を用いて実施例1と同様の実験を行い、試験片の表面に亜鉛微粒子含有量が90重量%の亜鉛微粒子分散耐食性被膜を形成した。形成された亜鉛微粒子分散耐食性被膜の膜厚は約10μmであった(断面観察より)。また、EPMA(電子線マイクロアナライザー:島津製作所社製EPM810)を用いて亜鉛微粒子分散耐食性被膜を表面に有する試験片の表面付近の断面観察を行った。その2次電子像を図7に亜鉛X線像を図8に鉄X線像を図9に示す。図7〜図9より、試験片本体表面から内部に亜鉛が拡散していることが判明した。なお、亜鉛の拡散による試験片本体の磁気特性の劣化は認められなかった。こうして製造された亜鉛微粒子分散耐食性被膜を表面に有する試験片10個に対して35℃の5%塩水を500時間噴霧するという耐食性試験を行ったが、試験後において外観変化(発錆)を来したものはなかった。\n\n【0046】\n\n実施例5:\n\n実施例1で調製した水系処理液に、増粘剤としてヒドロキシエチルセルロースをその濃度が1重量%となるように添加し、粘度を450cPに調整した。エタノールにて超音波洗浄(脱脂処理)してから15分間乾燥させた実施例1と同様の多数の試験片を、図4に示した塗装治具にセットし、試験片をセットした塗装治具を図6のようにして回転台座の\n\n略外周端部上に装着し、図1のようにして前記の処理液を用いたディップスピンコーティングを行った(遠心振り切りは300rpmで30秒間)。その後、試験片がセットされたままの塗装治具を回転台座から取り外し、試験片を塗装治具にセットしたまま130℃×10分間大気中にて仮乾燥し、続いて、表面に水系処理液の塗膜が形成された試験片に対して350℃×30分間大気中にて熱処理を行った。次に、試験片がセットされたままの塗装治具を上下反転させて再び回転台座に装着し、前記と同様の工程でディップスピンコーティングと仮乾燥と熱処理を行うことで、試験片の表面に亜鉛微粒子含有量が90重量%の亜鉛微粒子分散耐食性被膜を形成した。形成された亜鉛微粒子分散耐食性被膜の膜厚は10μmであった(断面観察より)。こうして製造された亜鉛微粒子分散耐食性被膜を表面に有する試験片10個に対して実施例1と同様の耐食性試験を行ったが、試験後において外観変化(発錆)を来したものはなかった。\n\n【0047】\n\n実施例6:\n\n実施例2で調製した水系処理液に、増粘剤としてヒドロキシエチルセルロースをその濃度が1重量%となるように添加し、粘度を440cPに調整した。この処理液を用いて、エタノールにて超音波洗浄(脱脂処理)してから15分間乾燥させた実施例1と同様の試験片の表面に、実施例5と同様にして、亜鉛微粒子含有量が60重量%でアルミニウム微粒子含有量が30重量%の亜鉛·アルミニウム微粒子分散耐食性被膜を形成した。形成された亜鉛·アルミニウム微粒子分散耐食性被膜の膜厚は10μmであった(断面観察より)。こうして製造された亜鉛·アルミニウム微粒子分散耐食性被膜を表面に有する試験片10個に対して実施例1と同様の耐食性試験を行ったが、試験後において外観変化(発錆)を来したものはなかった。\n\n【0048】\n\n実施例7:\n\n実施例3で調製した水系処理液に、増粘剤としてヒドロキシエチルセルロースをその濃度が1重量%となるように添加し、粘度を460cPに調整した。この処理液を用いて、エタノールにて超音波洗浄(脱脂処理)してから15分間乾燥させた実施例1と同様の試験片の表面に、実施例5と同様にして、亜鉛微粒子含有量が55重量%でアルミニウム微粒子含有量が25重量%で錫微粒子含有量が10重量%の亜鉛·アルミニウム·錫微粒子分散耐食性被膜を形成した。形成された亜鉛·アルミニウム·錫微粒子分散耐食性被膜の膜厚は10μmであった(断面観察より)。こうして製造された亜鉛·アルミニウム·錫微粒子分散耐食性被膜を表面に有する試験片10個に対して実施例1と同様の耐食性試験を行ったが、試験後において外観変化(発錆)を来したものはなかった。\n\n【0049】\n\n実施例8:\n\n実施例1と同様にして調製した出発原料としてのエチルシリケートを20重量%(SiO2換算)含有するpHが3の水溶液と、有機分散剤(商品名ソルスパースS20000:アビシア社製)と平均長径が20μmの鱗片状亜鉛微粒子(概寸法20μm×20μm×1μm)と平均粒径が3μmの粒状アルミニウム微粒子と平均粒径が3μmの粒状錫微粒子と平均粒径が1μmのアルミナ微粒子を水に添加して調製した亜鉛·アルミニウム·錫·アルミナ微粒子分散水系媒体を混合し、よく攪拌して1N水酸化ナトリウムでpHを7に調整し、出発原料としてのエチルシリケートと亜鉛微粒子とアルミニウム微粒子と錫微粒子とアルミナ微粒子の合計配合割合が70重量%(エチルシリケートはSiO2換算)で、出発原料としてのエチルシリケートと亜鉛微粒子とアルミニウム微粒子と錫微粒子とアルミナ微粒子と有機分散剤の配合比率が、9.9:55:25:8:2:0.1(重量比:エチルシリケートはSiO2換算)である粘度が16cPの水系処理液を得た。この水系処理液に、増粘剤としてヒドロキシエチルセルロースをその濃度が1重量%となるように添加し、粘度を465cPに調整した。この処理液を用いて、エタノールにて超音波洗浄(脱脂処理)してから15分間乾燥させた実施例1と同様の試験片の表面に、実施例5と同様にして、亜鉛微粒子含有量が55重量%でアルミニウム微粒子含有量が25重\n\n量%で錫微粒子含有量が8重量%でアルミナ微粒子含有量が2重量%の亜鉛·アルミニウム·錫·アルミナ微粒子分散耐食性被膜を形成した。形成された亜鉛·アルミニウム·錫·アルミナ微粒子分散耐食性被膜の膜厚は10μmであった(断面観察より)。こうして製造された亜鉛·アルミニウム·錫·アルミナ微粒子分散耐食性被膜を表面に有する試験片10個に対して実施例1と同様の耐食性試験を行ったが、試験後において外観変化(発錆)を来したものはなかった。\n\n【0050】\n\n比較例2:\n\n比較例1で調製した処理液に、増粘剤としてヒドロキシエチルセルロースをその濃度が1重量%となるように添加し、粘度を420cPに調整した。この処理液を用いて、エタノールにて超音波洗浄(脱脂処理)してから15分間乾燥させた実施例1と同様の試験片の表面に、仮乾燥条件と熱処理条件を比較例1と同様にしたこと以外は実施例5と同様にして、亜鉛微粒子含有量が90重量%の亜鉛微粒子分散耐食性被膜を形成した。形成された亜鉛微粒子分散耐食性被膜の膜厚は10μmであった(断面観察より)。こうして製造された亜鉛微粒子分散耐食性被膜を表面に有する試験片10個に対して実施例1と同様の耐食性試験を行ったところ、200時間経過時点において外観変化(発錆)を来したものが6個存在した。\n\n【産業上の利用可能性】\n\n【0051】\n\n本発明は、亜鉛微粒子分散耐食性被膜を表面に有する希土類系永久磁石の安定かつ簡易な製造方法、こうして製造される耐食性希土類系永久磁石、各種形状の薄型ワークに対する塗膜形成に適したディップスピンコーティング法およびワークの塗膜形成方法を提供することができる点において産業上の利用可能性を有する。\n\n【図面の簡単な説明】\n\n【0052】\n\n【図1】本発明のワークのディップスピン塗装方法の一例の概略工程図。\n\n【図2】本発明の回転台座の略外周端部上に複数個の平板状ワークを保持した状態の一例の概略図。\n\n【図3】本発明の回転台座の略外周端部上に複数個のリング状ワークを保持した状態の一例の概略図。\n\n【図4】本発明の塗装治具の一例の概略斜視図。\n\n【図5】本発明の複数個の平板状ワークをセットした塗装治具の概略図。\n\n【図6】本発明の複数個の平板状ワークをセットした塗装治具を回転台座の略外周端部上に装着した状態の一例の概略図。\n\n【図7】実施例4におけるEPMA2次電子像。\n\n【図8】同、亜鉛X線像。\n\n【図9】同、鉄X線像。\n\n【符号の説明】\n\n【0053】\n\n1  中心軸(回転軸)\n\n2  回転台座\n\n3  エアシリンダ\n\n4  塗料槽\n\n5  モータ\n\n11  保持部材\n\n12  スペーサ\n\n13  遠心飛び出し規制棒\n\n14  スペーサ\n\n15  水平吊掛部材\n\n21  保持棒\n\n22  スペーサ\n\n23  遠心飛び出し規制棒\n\n24  スペーサ\n\n25  棒状部材\n\n26  スペーサ\n\nX  薄型ワーク(平板状ワーク)\n\nY  薄型ワーク(リング状ワーク)\n\nZ  塗装治具', '【技术领域】\n\n【0001】\n\n本发明是一种稳定且简单的制造方法,其具有锌细颗粒分散腐蚀膜的稀土基永磁体,例如制造的耐腐蚀稀土永磁体,以及适用于涂层的浸旋涂层用于各种形状的薄工件的薄膜形成形成方法和工件的涂膜的方法。\n\n发明背景\n\n【0002】\n\n由ND-Fe-B永磁体和稀土的永磁体表示的基于R-Fe-B的永磁体如SM-Fe-N永磁体代表的R-Fe-N永磁体是资源,因为丰富而廉价使用材料并具有高磁性,R-Fe-B永磁体特别用于当今各个领域。\n\n然而,由于稀土基永磁体含有反应性稀土元素:R,在大气中易于腐蚀,并且当使用时,在没有任何表面处理的情况下,轻微的酸,碱和水分等腐蚀。腐蚀从表面进行进行,导致腐蚀锈,以及它,它导致磁体特性的恶化和变化。此外,如果锈生成的磁铁被结合到诸如磁路的装置中,则锈蚀可以散射到污染的外围部件。\n\n尽管存在许多用于对稀土基永磁体施加耐腐蚀性的方法,但是存在使用硅化合物形成耐腐蚀涂层的方法,作为稀土基永磁体的表面上的起始材料。近年来,已经进行了各种研究,提高了耐腐蚀涂层的进一步性能。\n\n例如,在下面的专利文献1中,在施加由碱性硅酸盐溶液制成的处理液体之后,将锌细颗粒分散在稀土永磁体的表面上,这是一种制备锌细颗粒分散腐蚀的方法提出了通过进行热处理的薄膜。该方法利用涂层用碱硅酸盐作为起始原料和锌细颗粒的牺牲防腐作用以及能够赋予稀土的永磁体的高耐腐蚀性的方法。被期望。但是,在该方法中,由于处理溶液必须是碱性的,以便将锌细颗粒均匀地分散在处理液中以形成锌细颗粒分散腐蚀膜,因此处理液用作碱性。当施加到表面时在永磁体中,形成构成磁体的表面的金属氢氧氧化物,并且由于具有这种金属氢氧化物层的磁体层,磁体的表面被锌细颗粒分散体覆盖了问题具有优异粘合性的耐腐蚀涂层难以形成,并且含有碱性硅酸盐的涂层,可能发生裂纹的问题,因为它柔韧性较差,并且废液处理是麻烦的。有问题。有问题。\n\n此外,在以下专利文献2中,在含有硅有机化合物的无机细颗粒的处理液中施加处理液体之后,在稀土基永磁体的表面之后,无机之后通过进行热处理颗粒分散。已经提出了一种制造耐腐蚀膜的方法。该方法用于使用硅有机化合物在稀土永磁体的表面上作为起始材料形成薄而致密的耐腐蚀涂层,并且在膜组件中分散具有特定平均粒度的无机颗粒,因此可以在薄膜形成过程中放松膜内应力,以防止诸如发生裂缝的物理缺陷。该方法还被预期作为能够赋予稀土永磁体的高耐腐蚀性的方法。然而,考虑到纳米顺序的矿物细颗粒难以在水中均匀分散,在制备处理溶液中,将轻微的水加入到有机溶剂如下酒精中。另外,由于硅有机硅化合物通过使硅有机化合物在酸性条件下反应而反应,需要分散无机颗粒,因此制备的处理溶液是酸性的,处理液用作稀土系统永磁体。当施加到表面时,磁铁和有机溶剂挥发的腐蚀问题,处理液体组合物可能会发生变化,并且环境不良影响受到影响,并且废物液处理是麻烦的问题。在那里。\n\n专利文献1:APHN 2000-182813\n\n专利文献2:APHN 2 2001-143949\n\n发明的描述\n\n本发明要解决的问题\n\n【0003】\n\n因此,本发明是一种稳定且简单的制造方法,其具有锌细颗粒分散腐蚀膜的稀土基永磁体,以及适用于各种形状的薄工件上的涂布膜形成的浸纺,耐腐蚀性稀土永磁体和各种形状的薄工件。本发明的目的是提供一种涂布方法和工件的工件形成方法。\n\n[解决问题的手段]\n\n【0004】\n\n如权利要求1所述的上述点,制备本发明的耐腐蚀稀土永磁体的方法,如权利要求1所述的烷基硅酸盐的水解聚合反应物和平均粒径的锌细颗粒在pH为6至8水溶液后1μm至50μm,在粘度为1000cc或更低的粘度,在施加到稀土基永磁体的表面之后,通过进行热处理锌细细颗粒分散腐蚀涂层在250℃至400℃。并从磁体表面弥漫锌它的特点是。\n\n3.根据权利要求2所述的制造方法的特征在于,在根据权利要求1所述的制造方法中,锌细颗粒是鳞片状的。\n\n在根据权利要求3的制造方法中,在根据权利要求1或2的制造方法中,烷基硅酸盐和锌细颗粒作为水性处理溶液中的原料的总混合比为40%至90重量%(烷基硅酸盐是SIO.2它的特征是转换。\n\n5.根据权利要求1至3中任一项所述的制造方法,根据权利要求1至3中任一项所述的制造方法显示了烷基硅酸盐和锌细颗粒作为所述水性处理液中的起始材料的混合比1:1至1 :19(重量比:烷基硅酸盐是SIO2它的特征是转换。\n\n5.根据权利要求5所述的制造方法的特征在于,在根据权利要求1至4中任一项所述的制造方法中加入到水性处理溶液中。\n\n根据权利要求6所述的制造方法的特征在于,在根据权利要求1至5中任一项所述的制造方法中,锌细颗粒分散腐蚀膜的膜厚度为1μm至50μm。\n\n8.根据权利要求7所述的制造方法的特征在于,在根据权利要求1至6中任一项所述的制造方法中,还可以在锌细颗粒分散腐蚀膜中进一步分散所述其他无机细颗粒。\n\n9.根据权利要求8所述的根据权利要求1所述的制造方法,其特征在于,所述制造方法的特征在于,所述水基永磁体在所述水基处理液的表面上施加到所述水基处理液的表面进行所述。 7.做。\n\n10.根据权利要求9所述的制造方法的特征在于,在根据权利要求8所述的制造方法中,使用具有300cp至600cp的水基处理液进行粘度。\n\n在根据权利要求10的制造方法中,在根据权利要求8或9的制造方法中,旋转基座的多个稀土基永磁外周端的旋转基座的旋转基座旋转为旋转轴的垂直方向上的中心轴线浸入旋转基座中,其中稀土基永磁体保持在水基处理液体罐中,水基加工液浸入水基处理液体罐中,然后旋转基座在后旋转浸入水基加工液。通过通过在稀土永磁体中萃取的水性处理溶液离心来进行浸旋涂层。\n\n12.根据权利要求11所述的制造方法的特征在于,在根据权利要求10所述的制造方法中,基本上保持多个稀土基永磁体,只要旋转基座周端即可。\n\n13.根据权利要求12所述的制造方法的特征在于,在根据权利要求10或11的制造方法中,稀土基永磁体是薄磁体。\n\n14.根据权利要求13所述的制造方法的特征在于,在根据权利要求12所述的制造方法中,薄磁体被保持为基本平行于旋转基座的径向。\n\n在根据权利要求14的制造方法中,在根据权利要求13的制造方法中,当多个薄磁体被分离时,当它们附着在旋转基座的ISOH外周端上时分离。表面可以设置基本上直接平行于旋转基座的径向\n\n它的特征在于使用涂层夹具。\n\n此外,根据权利要求15的制造方法的特征在于,在根据权利要求12的制造方法中,薄磁体是平坦的,环形或弓形形状。\n\n17.根据权利要求14所述的制造方法是根据权利要求14所述的制造方法,在执行浸旋涂层之后,将覆盖从旋转基座的涂覆的夹具设定,并在其特征在于所述变薄的任何地方涂漆用夹具热处理磁铁。\n\n此外,如上所述,根据权利要求17的第十五方面的稀土基永磁体,其中将1μm至50μm的平均粒径分散在硅酸盐开始的膜组分中。并且锌在磁体表面的表面内漫射它的特点是。\n\n19.根据权利要求18所述的稀土基永磁体的特征在于,在根据权利要求17所述的稀土永磁体中,耐腐蚀涂层的锌细颗粒含量为50重量%至95重量%。。\n\n魔鬼索赔1911.如权利要求17所述的稀土永磁体或18.其特征在于,在上述稀土基永磁体中。\n\n【发明效果】\n\n【0005】\n\n根据本发明,在表面上具有锌细颗粒分散体腐蚀膜的稀土基永磁体的稳定和简单的制造方法,以这种方式制造的耐腐蚀稀土永磁体,适合涂层提供各种形状的薄工件的薄膜形成,通过形成旋涂方法的方法和工作的工件。\n\n实施本发明的最佳方式\n\n【0006】\n\n在本发明中,锌细颗粒分散腐蚀涂层是具有1000cp或更低的水基治疗溶液,其pH具有含有具有烷基硅酸盐的锌细颗粒和具有锌细颗粒的pH平均粒径为1μm至50μm或更小,稀土化。在施加到系统永磁体的表面后,在250℃至400℃下进行热处理。以这种方式形成的锌细颗粒分散腐蚀膜是赋予稀土基永磁体的高耐腐蚀性,并且通过从磁体主体的表面扩散锌,粘合性优异。\n\n【0007】\n\n在这里,作为烷基硅酸盐,通式:SinO.(n-1)(要么)(2n+2)它被显示的内容所用。在该式中,R是烷基,并且举例说明了具有1至4个碳原子的低级烷基,例如甲基,乙基,丙基或丁基,但除了廉价之外除了廉价之外,没有毒性。优选可操作性优异的乙基(硅酸乙酯)。此外,尽管N是1或更大的整数,但是希望N是10或更小的整数,以形成致密的涂层。\n\n【0008】\n\n此外,锌细颗粒是平均粒径为1μm至50μm的颗粒。当平均粒径小于1μm时,如果锌细颗粒可能导致水处理溶液中的二次聚集,如果平均粒径大于50μm,则锌细颗粒在水性处理溶液中沉淀。有存在存在的风险,其中水基处理溶液在其中储存稳定性优异的锌细颗粒在任何情况下均匀地分散在任何情况下可能难以制备。锌细颗粒的平均粒径优选为2μm至30μm,更优选为5μm至20μm。锌细颗粒可以是任何形状,但是锌细颗粒优选在涂层组件中层压到高密度中,以便尽可能地防止针孔。也是为了使磁铁表面的表面漫射锌。身体,磁体锌细颗粒\n\n有利地,孩子的接触面积宽。因此,从这样的观点来看,锌细颗粒理想地鳞片状。当锌细颗粒鳞片状时,锌细颗粒的平均粒度是指平均长轴。\n\n【0009】\n\n烷基硅酸盐和锌细颗粒作为水性处理溶液中的原料的总混合比为40%至90重量%(烷基硅酸盐是SIO2希望转化,更希望将60%〜80重量%设定。如果总混合比小于40重量%,则必须增加制造工艺的数量超过必要的,以获得具有足够特性的厚度的锌细颗粒分散腐蚀耐腐蚀膜,而90则重量超过%,存在影响水基治疗溶液的储存稳定性的风险。\n\n【0010】\n\n作为水性处理溶液中的原料中烷基硅酸盐和锌细颗粒的混合比为1:1至95重量%,因此锌细颗粒分散腐蚀涂层的锌细颗粒含量为50重量%达到95重量%。:19(重量比:硅酸盐是SiO2希望被转换)并且理想地是1:3至1:10更为希望。如果锌细颗粒分散体腐蚀涂层的锌细颗粒含量小于50重量%,则可能无法充分表现出薄膜组分中锌细颗粒的效果,并且如果它超过95%重量,这是因为可能没有充分表现出作为原料的硅酸盐的耐腐蚀膜的原始特性。\n\n【0011】\n\n施加到稀土基永磁体的表面的水性处理溶液的pH值为6至8,如果pH小于6,则稀土永磁体的腐蚀是如上所述的专利文献2中所述的。另一方面,如果pH大于8,则粘合性优异的锌细颗粒分散体耐腐蚀膜的可能性不如上所述的专利文献1中所述。\n\n【0012】\n\n当施加到稀土基永磁体的表面的水性处理溶液的粘度定义为1000cp或更小时,当水性处理液的粘度超过1000cp时,难以形成锌细颗粒分散体具有均匀的薄膜厚度的耐腐蚀膜。它是因为存在风险\n\n【0013】\n\n均匀性优异的水性处理溶液的制备是,例如,通过通过在酸性条件下水解烷基硅酸盐(约pH 3至4)或碱性条件(约pH10至12)。在加入1μm至50μm的锌细颗粒后,期望通过将pH调节至6-8来进行,并在100cp或更小(粘度超过50cp或更低)时保持或调节粘度。最好是25cp或更低)。当硅酸盐与酸性条件下的水解聚合反应反应时,可以使用例如氢氧化钠等进行pH的调节。另外,当硅酸盐在基本条件下反应时,可以使用例如盐酸等进行pH的调节。\n\n【0014】\n\n硅酸盐的水解聚合反应是致密的,使膜在制备水性处理溶液中形成。烷基硅酸盐的水解聚合反应可能不一定必须必须反应所有使用的烷基硅酸盐,并且可以在一个方面使得反应一部分烷基硅酸盐。水解聚合反应程度可以在加入酸和碱加成和水解聚合反应时使用的水的水量调节。当烷基硅酸盐的水解聚合反应高时,水溶液的粘度可能超过100cp。一旦粘度超过100cp,如果加热水,则也可以降低粘度,而是为了确保水性处理溶液的优异均匀性,如果水溶液的粘度可能超过100cp,则水解。在聚合反应时,希望适当加入水以防止100cc的粘度。另外,当希望制备水性处理液的表面张力,其适用于使薄膜具有所需的薄膜厚度,例如,例如,在水基处理液中\n\n可以通过添加基于纤维素的增稠剂(例如水溶性纤维素醚,其说明羟乙基纤维素,甲基纤维素,羟基丙基纤维素,乙基羟乙基纤维素,甲基乙基纤维素等)等来调节粘度。当含水处理溶液的粘度为100cp或更大时,为了增厚待形成的膜的膜厚度,通过向一次制备的水性处理溶液中添加增稠剂并增强粘度来进行。\n\n【0015】\n\n当将锌细颗粒加入通过水解硅酸盐获得的水溶液时,希望使用有机分散剂在水性处理溶液中均匀分散锌细颗粒。将有机分散剂加入水性处理溶液中,例如,通过将锌细颗粒在加入有机分散剂的水中引入水中的锌细颗粒均匀分散锌细颗粒分散水介质。颗粒分散体可以通过将含水介质和水溶液与硅酸烷基烷基酯混合来进行。有机分散介质是阴离子分散介质(脂族多元羧酸,聚醚聚酯羧酸盐,聚合物聚酯酸多胺盐,高分子量多元羧酸长链胺盐等),非离子分散介质(如羧酸盐,磺酸盐和铵盐如聚氧乙烯烷基醚和脱水山梨糖醇酯),聚合物分散介质(水溶性环氧羧酸盐,磺酸盐和铵盐等,适用于亲和力和成本用锌细颗粒。\n\n【0016】\n\n为了使含水处理液的粘度施加到稀土基永磁体的表面,为了形成具有足够特性的厚度的锌细颗粒分散体腐蚀膜,形成制造的数量高于必要的过程,希望是5cc或更高。\n\n【0017】\n\n当将水基处理液施加到稀土基永磁体的表面时,可以采用浸涂方法,喷射方法,旋涂法,浸旋涂布法等。为了改善在稀土基永磁体的表面上形成的锌细颗粒分散腐蚀膜之间的粘附性,在施加水性处理溶液之前,可以在磁体上进行喷砂或酸洗处理。。\n\n【0018】\n\n稀土基永磁体的施加在水性加工溶液对表面的应用,理想地通过浸旋涂层方法进行,以形成更均匀的水处理液体的涂膜。特别地,多个稀土基永磁体保持在旋转轴线的旋转基座的基本外周端上,并且保持旋转基座,其中保持稀土基永磁体。浸没后稀土基永磁体中的水基处理液,水基加工液从液体中取出,旋转基座旋转以旋转旋转地基的永磁体,以及水基治疗溶液通过离心除以额外的。希望进行涂层。\n\n【0019】\n\n作为形成具有薄膜的薄涂膜的方法,例如,薄膜厚度为约10μm,将工作浸入油漆罐中,然后从液体中除去并浸入旋转涂层方法可以通过握住粘附的涂料来使用。作为到目前为止已知的薄工件的浸旋涂层方法,例如,作为涂覆日本专利公开No.7-201088中的光盘保护膜的方法。在该方法中,多个基板以规则的间隔垂直于水平主轴设定,虽然通过浸入基板的中心以外的材料施加到保护膜材料,同时在主轴周围旋转低速施加材料,然后施加材料。它从高速升高并最终旋转以摆脱材料。此外,在日本专利申请公开No.3-86271中,通过包括吊架的整体重心的垂直线,其具有悬挂器的涂层基本水平地保持。提出了一种浸入旋转涂布方法,其特征在于它包括旋转作为轴来离心涂料的步骤。此外,日本专利申请公开No.2000-164556\n\n在该问题中,具有多个凹槽的一对保持构件与具有凹槽的侧面相对,并且晶片载体用于将晶片的周边保持在该相对的槽中,并且凹槽基本上是旋转加速度。a提出了在保持在载体上旋转和干燥液体的旋转方向上的多个晶片上的液体离心液体的方法。\n\n【0020】\n\n当采用大量薄型工件的浸旋涂布方法时,期望可以进行均匀的涂层,而不会导致所有作品的膜厚度变化而不呈工作的形状。然而,鉴于这一点,上述专利文献中描述的任何方法或多或少的缺点。具体地,在JP-A-7-201088中描述的方法中,由于工作必须保持在其中心,因此缺点是只能施加环形工作。此外,在该方法中,水平主轴与环形工作的内周表面接触,并且工作本身通过两者之间产生的摩擦力旋转,因此工作和工作之间产生的摩擦力主轴变化。由于工作的转速变化,能够均匀地涂覆所有作品的缺点,并且难以高速旋转工作(例如,粘度为500cp),因为如果您申请超过工作,则难以高速旋转,缺点是额外粘附的涂料可能不会足够摇摆不足。此外,在JP-A-3-86271中描述的方法中,由于工件的平面基本水平地保持,因此存在缺点:涂料的沉积量可以在上表面和下表面之间发生。此外,在JP-A-2000-164556中描述的方法中,由于其中一个工件的一个平面保持与旋转轴线相反,因此每个工作的旋转速度不同,所以所有工作都有一个缺点是,可能无法执行统一的涂漆。\n\n【0021】\n\n然而,根据本发明所提出的浸旋涂层方法,可以进行均匀的涂布膜形成而不导致膜厚度变化到大量薄工件。\n\n【0022】\n\n在下文中,将根据需要参考附图描述本发明中提出的浸旋涂层方法,但是本发明中提出的浸旋涂层方法在以下描述中没有解释。本发明提出的浸旋涂层方法可以应用于工件的任何形状的涂料而不被工作的形状束缚,但特别适用于涂漆诸如平板和环形的薄工件或弓形形状。在以下描述中,将本发明方法的情况应用于平面工作和卷轴的涂层。\n\n【0023】\n\n图。图1是本发明提出的浸旋涂层方法的实例的示意性方法图。如果按顺序描述了该过程,则(a)首先,多个扁平工程x是旋转基座2的单独与外围端部相比,其可以将中心轴1沿垂直方向旋转为旋转轴。最宽的一侧(平面)基本上环形地保持,使得它基本上平行于径向。 (b)接下来,通过浸入涂料,通过气缸3升高涂布罐4以将工作X保持在涂布箱4中的旋转基座2浸入。 (c)接下来,通过气缸3降低涂覆罐4,以从液体中移除旋转基座2。 (d)最后,旋转基座2用电动机5旋转为旋转轴(至少一次,希望反转旋转方向),并且额外的附图被离心到工作平面X.摇匀。根据该方法,即使粘度相对较高(使得粘度超过200cp),工作x通过调节旋转基座2的尺寸或者由于涂料的粘附量到平面而控制转速可以自由调节平面,可以自由调节所形成的涂层的膜厚度。\n\n【0024】\n\n期望旋转基座2的基座表面由网状形状制成,使得不能制造涂料储备。\n\n【0025】\n\n图。图2A示出了多个扁平的工作作品x的状态的示例,其中多个扁平的工作x基本上是环形的,使得各个平面基本上平行于旋转基座的基本上外周端2。图2是基本上平行于旋转基座的基本上外周端。这是示意性局部透视图。图。图2B是旋转基座2从上侧保持工作x的视图。工作X放置在旋转基座2中铺设的两个保持构件(具有半圆形横截面的杆状。工作X可以直接放置在旋转基座2上,如图2所示,可以进行(参见图2C)。\n\n【0026】\n\n各个扁平工程X由相对于保持构件11在垂直方向上设置的间隔件12隔开。间隔件12还具有防止工作X的滚动的功能。相邻间隔件12和间隔件12之间的距离优选地比工件X的厚度宽。这是因为间隔件12在工作x的两侧邻接,这是明显的。此外,希望隔离物12的横截面是圆形的。这是因为通过旋转旋转基座2可以最小化在工作平面中产生的抵接迹线。\n\n【0027】\n\n在步骤(d)中,当通过电动机5旋转旋转基座2并且中心轴线1作为旋转轴线旋转时,当已经提取到挤出到的涂层材料时,工作x是通过离心力的径向。将平面X的平面离心。为了通过该图的配置跳出,它具有调节的功能。此外,相对于离心跳转调节杆13设置在旋转轴方向上的间隔物14具有在离心过程中调节工作X的运动的功能。\n\n【0028】\n\n图。图3A示出了多个环形作品保持基本环形的状态的示例,使得各个平面基本上平行于旋转基座的基本上外周端。图3是基本上平行于旋转基座的基本上外周端。这是示意性局部透视图。通过该图的配置将工作Y悬挂并悬挂在旋转基座2上的水平悬架构件15。水平悬架构件15优选地是杆状形状,其中横截面是圆形的。此外,希望水平悬架构件15的工作Y悬挂的部分优选地切割成V形型(参见图3B)。通过使水平悬架构件15作为这样的配置,可以最小化在工作Y的环部分中发生的悬架迹线。\n\n【0029】\n\n当在多个薄的工作中执行浸涂旋转涂层时,薄工件中的一个可以直接直接保持在旋转基座中,如图1和2所示。1至3,但旋转基座缩写安装在外周端,最宽的表面可以基本上设置在单独工件的状态下基本上基本上平行于旋转基座的径向。可以使用涂料夹具。\n\n【0030】\n\n图4缩写方案,使得当多个扁平工作用作与旋转基座的分离状态分离时,该平面基本平行于旋转基座的径向。图。图。图1是示例的示意性透视图。图1是示例的示意性透视图可以环形地设定的涂层夹具。涂层夹具Z在水平方向上水平地布置,用于保持平面,使得平面在垂直方向上基本平行,而多个扁平工程x与各个工板分离。当保持杆21与间隔件22一起由工作X设置的夹具安装在旋转基座的另一个最外侧周端上,旋转基座旋转以邻接工作X的外侧表面并离心。尽管至少是离心截断杆23,但是间隔件24,其平行于水平方向平行于通过力地限制径向沿径向跳跃x,至少设置间隔物24,但是保持杆21上方的夹具在垂直倒置时,该平面基本上平行于垂直方向和工作X的顶部使得当单独的工件分开时,工作x的上部存在于垂直方向上,并且工作x的顶部存在。保持杆21用于保持21\n\n具有间隔件26的两个间隔件26进一步平行于。当夹具垂直倒置时,用于将工作X保持在上阶的工作X的保持杆21用作杆状构件25。\n\n【0031】\n\n图。图5是涂层夹具Z的示意图(A)和DD剖视图(B),其中设置多个薄的作品X。\n\n【0032】\n\n期望保持杆21和杆状构件25在横截面中是圆形的。这是因为可以最小化在薄层X的下表面上产生的安装标记。另外,希望离心跳转调节杆23也是圆形横截面的圆形。这是因为可以最小化在薄工作x的外侧产生的邻接迹线。另外,希望间隔物22和间隔件24和间隔件26在横截面中是圆形的。这是因为可以最小化在薄工作x的平面中发生的邻接轨迹。保持杆21和杆状构件25不一定需要,而是可以是一个。\n\n【0033】\n\n图2中所示的涂覆夹具Z.例如,如下使用图4所示。图。图6是用多个扁平工作X设定多个扁平工作X的状态的示例的示意性局部局部剖视图,通过可拆卸安装将X连接到旋转基座2的基本上外周端部意味着本身已知。它是。根据图1所示的示意性过程图。如图1所示,通过浸入涂料浸渍涂层,通过将工作X与空气汽缸2和通过设定工作X获得的涂层夹具Z的旋转基座2连接到涂料罐4上。接下来,通过气缸3降低涂覆罐4以从液体中移除旋转基座2。最后,旋转基座2由电动机5旋转,中心轴线1作为旋转轴线旋转以通过离心离心来完成浸旋涂层。任意时间之后,具有工作x的涂层夹具z从旋转基座2保持设定,并且在任何地方的涂料夹具z的工作x是期望的(天然干燥或加热)干燥。此后,具有工作X的涂层夹具Z保持上下,并且旋转基座2进一步附接到旋转基座2,并且在与上述相同的过程中再次进行浸旋涂层。以这种方式,由于第一绘画和第二幅画改变了工作X中生成的放置标记和迹线,因此第二幅画使工作X与第一绘画。由于还在安装标记和邻接标记上执行绘画,因此可以在工作x上进行更统一的绘画。此后,具有工作x的涂层夹具z从旋转基座2保持设定,并且工作x保持在设定为涂层夹具Z的任何地方,所需的(天然干燥或热干燥)。例如,可以是均匀的涂层膜形成有效地执行而不会导致膜厚度变化到大量工作。\n\n【0034】\n\n另外,当通过浸入旋转涂覆方法进行稀土基永磁体的表面施加到稀土基永磁体的表面时,可以通过使用具有粘度的水基处理液来进行更均匀的涂膜形成300 CP至600 CP。通过在制备一次水基处理溶液中加入纤维素的增稠剂等,理想地增强了这种粘度的这种水性处理溶液(增稠剂是在水性处理溶液中加入1%至2重量% )。\n\n【0035】\n\n稀土永磁体的热处理,其中在表面上形成水性处理液的涂膜的涂膜在250℃至400℃下进行。当在这种温度条件下进行热处理时,水性处理溶液中含有的锌细颗粒的一部分是通过从膜形成过程中的磁体主体的表面中等扩散而具有优异的粘合性。细颗粒分散体形成耐腐蚀膜。当热处理的温度低于250℃时,不仅充分引起这种锌扩散,并且在水之后磁体的腐蚀仍然在稀土永磁体的表面上,而不会充分蒸发。同时如果锌扩散超过必要,则存在引线的风险,磁体特性可能对磁体特性产生不利影响。例如,热处理时间理想地是10分钟至120分钟。此外,水处理液体\n\n通过临时干燥涂覆在100℃至170℃的表面上的稀土永磁体,可以进行热处理以形成更均匀的锌细颗粒分散体腐蚀膜。\n\n【0036】\n\n理想地形成锌细颗粒分散腐蚀膜,使得膜厚度为1μm至50μm,更优选形成为5μm至15μm。如果薄膜厚度小于1μm,则可以不充分表现出锌细颗粒分散腐蚀膜的特性,而当膜厚度超过50μm时,稀土基永磁体的有效体积可以充分担保。这是因为存在消除的风险。\n\n【0037】\n\n其他无机颗粒可以进一步分散在锌细颗粒分散体腐蚀涂层中。矿物细颗粒的实例包括金属的细颗粒,如铝,锡,锰,镁,钛,镍等。例如,通过用锌细颗粒分散铝细颗粒,可以通过锌细颗粒的腐蚀有效地防止白色生锈(碱性碳酸氢盐)。另外,为了进一步减少可以在膜中产生的针孔,并提高涂层的耐腐蚀性,用锌细颗粒Al2O.3和tio.2SiO.2可以分散诸如云母的氧化物细颗粒。当其他无机细颗粒用锌细颗粒分散时,希望形成待形成的耐腐蚀膜的锌细颗粒的总含量,并且其它无机细颗粒为95重量%或更低。\n\n【0038】\n\n作为稀土的永磁体,由ND-Fe-B永磁体和由SM-Fe-N永磁体表示的R-Fe-B基永磁体等。一种已知的稀有提及地球永磁体。其中,在高磁性特性方面,R-Fe-B永磁体是理想的,并且具有优异的质量生产率和经济性。稀土基永磁体可以是烧结磁体或粘合磁体。\n\n稀土化永磁体中的稀土元素(R)是Nd,Pr,Dy,Dy,Ho,Tb,Sm,甚至更多,La,Ce,Gd,ER,欧盟,Tm,Yb,Lu中的至少一种, y是希望包含其中至少一个。\n\n另外,尽管它通常足够的RS,两个或更多个混合物(例如混合金属,Dijim等)可以用于实际使用,但为方便起见。\n\n此外,通过添加Al,Ti,V,Cr,Mn,Bi,Nb,Ta,Mo,W,Sb,Ge,Sn,Zr,Ni,Si,Zn,HF和Ga,也是可能的提高胁迫力的大规模和退磁曲线,提高可制造性,降低价格。此外,通过用CO替换FE的一部分,可以提高温度特性而不会影响所得磁体的磁性。\n\n【例子】\n\n【0039】\n\n在下文中,将通过实施例和比较例更详细地描述本发明,但是本发明不限于此。\n\n【0040】\n\n例1:\n\n作为原料,Nd作为电解铁,FerroOboron,R被掺入所需的磁体组合物中,并且在溶解浇铸后,通过研磨和破碎在机械研磨方法之后通过研磨和破碎粒度为3μm至10μm。在形成中10kOE磁场,然后在1100℃下烧结1小时,在氩气氛中为1小时,在600℃下进行2小时的烧结体进行2小时。使用扁平烧结磁体试验片进行以下实验从具有15nd-7b-78fe的组成的磁体切出36mm×32mm×3mm尺寸。\n\n【0041】\n\nA.硅酸乙酯40(硅酸乙酯SIO2在转化率方面加入含有40重量%的无色透明液体,并通过用1N盐酸将pH调节至3,反应硅酸盐和20重量%的硅酸盐作为原料(SiO2转换\n\n制备含有水溶液的水溶液。该水溶液和有机分散剂(商品名Solsper S20000:由Avicia Co.,Ltd。制造)和通过添加鳞片状锌细颗粒(概述20μm×20μm×1μm)制备的锌细颗粒分散水介质平均主要直径为20μm。用1N氢氧化钠将pH调节至pH至7,硅酸钠和锌细颗粒作为起始材料的总混合比为70重量%(硅酸盐是SiO的硅酸盐2在转化率方面,硅酸盐和锌细颗粒的混合比和有机分散剂作为原料为9.9:90:0.1(重量比:硅酸乙酯是SIO2得到了作为转化率的粘度的粘度。\n\nB.将天然干燥15分钟的试验片浸入上述水性处理溶液中,在乙醇中具有超声波洗涤(脱脂处理)。通过容纳从水性处理溶液中除去的试验片来除去附着在样品表面的额外水处理溶液后,通过分离样品的表面除去附着于试验片表面的额外水基治疗溶液×300℃30秒,临时干燥100°C×5分钟的气氛。对施加到表面的水性处理溶液的试验片再次在水性处理溶液中再次进行浸渍的试样。除去从水性处理溶液中除去的试验片表面的额外水基处理溶液后,如上所述除去后,320℃用于试样,其中形成水性处理液的涂膜在表面×热处理在大气中进行10分钟,并在试验片的表面上形成具有90重量%的锌细颗粒含量的锌细颗粒分散腐蚀膜。形成的锌细颗粒分散腐蚀涂层的膜厚度约为10μm(来自横截面观察)。\n\n通过这种方式,对耐腐蚀性试验在表面上喷射5%的35℃的500小时,在表面上具有锌细颗粒分散腐蚀涂层的10个测试片,但在测试之后(生锈)测试后,没有什么可到的。\n\n【0042】\n\n例2:\n\n20重量%的硅酸盐作为以与实施例1相同的方式制备的原料(SiO2含有3个pH和有机分散剂的转化率(商品名Solspess S20000:由Avicia Co.,Ltd。制造)和平均主要直径为20μm的鳞片状锌细颗粒(概要为20μm×20μm的1μm ×1μm)和平均粒径为3μm。将粒状铝细颗粒加入到水中,将水性介质 - 铝细颗粒分散水介质混合,并将混合物彻底搅拌并用1N氢氧化钠调节至7。和乙酸硅酸盐和锌细颗粒和铝细颗粒作为原料,总混合比为70重量%(硅酸乙酯是SIO2就转化率),硅酸盐和锌细颗粒和铝细颗粒和铝细颗粒的混合比和有机分散剂为9.9:60:30:0.1(重量比:硅酸乙酯是SiO。2通过水基治疗溶液为13cc的水性处理溶液获得。一种锌 - 铝细颗粒分散体耐腐蚀涂层,其锌细颗粒含量为60重量%,锌细颗粒含量为60重量%,铝细颗粒含量与实施例1相同的方式使用该水性处理解决方案。他们形成了。形成的锌和铝细颗粒分散体腐蚀涂层的膜厚度约为10μm(来自横截面观察)。在表面上制造的锌细颗粒分散腐蚀涂层的10个试验片上进行了类似于实施例1的耐腐蚀性测试,但试验后没有外观变化(生锈)。稻田。\n\n【0043】\n\n例3:\n\n20重量%的硅酸盐作为以与实施例1相同的方式制备的原料(SiO2含有3个pH和有机分散剂的转化率(商品名Solspess S20000:由Avicia Co.,Ltd。制造)和平均主要直径为20μm的鳞片状锌细颗粒(概要为20μm×20μm的1μm ×1μm)和平均粒径为3μm。将颗粒状铝细颗粒和平均粒径为3μm的颗粒锡微粒加入到水中,并通过将颗粒状铝微粒加入到水中制备的水基培养基水,混合物彻底搅拌,用1N氢氧化钠将pH调节至7. 70%重量的硅酸盐和锌细颗粒和锌细颗粒和铝微粒和锡微粒和锡微粒作为原料(硅酸盐是SiO的硅酸盐2在转化率方面,硅酸盐和锌细颗粒和铝细颗粒与铝细颗粒和锡微粒的混合比和作为原料的有机分散剂为9.9:55:25:10:10:0.1(重量比:硅酸盐是SIO2通过18cc的水性处理溶液获得的粘度是翻译。如实施例1在实施例1中使用该水性处理溶液,如实施例1在实施例1中如实施例1中的锌细颗粒如实施例1中那样\n\n形成锡铝 - 铝型颗粒分散腐蚀膜,其锡微粒含量为55重量%和55重量%的锡微粒含量和锡微粒含量。形成的锌铝和锡微粒分散腐蚀涂层的膜厚度约为10μm(从横截面的观察到)。如实施例1中的10个试验片在表面上的10个试验片上进行相同的耐腐蚀性试验,并且在测试后进行外观变化(生锈)。没有。\n\n【0044】\n\n比较例1:\n\nA. SIO.2/ na.2o在4.0时为4.0,碱性硅酸盐水溶液,pH为12。该水溶液和有机分散剂(商品名Solsper S20000:由Avicia Co.,Ltd。制造)和通过添加鳞片状锌细颗粒(概述20μm×20μm×1μm)制备的锌细颗粒分散水介质平均主要直径为20μm。混合并搅拌良好,碱硅酸盐和锌细颗粒作为起始材料的总混合比为70重量%(碱硅酸钠钠是SiO2在转化率方面),碱硅酸盐和锌细颗粒的混合比和有机分散剂作为原料为9.9:90:0.1(重量比:碱硅酸钠钠是SiO2获得作为转化率的处理溶液。\n\nB.将与在乙醇中天然干燥的实施例1类似的试件浸入上述处理溶液中。除了通过容纳从处理溶液中除去的试验片来粘附到样本表面的额外处理溶液之后,通过将样品的表面除去300rpm来除去粘附在样品表面的额外处理溶液30秒,在大气中100°C×5分钟在痛苦的干旱中。经受施加到表面的处理溶液的测试片再次在处理溶液中进行处理过的溶液。除去附着于从处理溶液中提取的试验片的表面的额外处理液后,除了如上所述的相同后,将150℃×30分钟的气氛用于试件,其中处理液的涂膜形成在表面上。进行热处理,在试件的表面上形成具有90重量%的锌细颗粒含量为90重量%的锌细颗粒分散腐蚀膜。形成的锌细颗粒分散腐蚀涂层的膜厚度约为10μm(来自横截面观察)。\n\nC.当进行耐腐蚀性试验时,相对于在表面上制造的锌细颗粒分散腐蚀膜的10个试验片喷射5%的35℃的500小时,外观变化(有七根生锈) 。\n\n【0045】\n\n例4:\n\n将2wt%的环氧树脂加入到由150μm的平均主要直径为150μm的平均主要直径的合金粉末中加入150μm,由77原子%,B:6原子%,CO:5原子%,由淬火合金法制备。686N / mm2在压缩成型后,通过在150℃下固化1小时,将外径为30mm×内径28mm×长度4mm的环形粘合磁体试验片的外径进行相同的实验在实施例1中,在锌细颗粒含量为90重量%的试验片的表面上形成锌细颗粒分散腐蚀涂层。形成的锌细颗粒分散腐蚀涂层的膜厚度约为10μm(来自横截面观察)。此外,EPMA(电子束微量分析仪:由Shimadzu Corporation制造的EPM 810)在横截面观察中观察到在表面上具有锌细颗粒分散腐蚀涂层的试验片的表面附近。二次电子图像是图1中的锌X射线图像。图7中的图7.从图中。如图7至9所示,已经发现锌从测试件体的表面漫射。另外,未观察到通过锌的扩散观察到试验片体的磁特性。通过在表面上制造的锌细颗粒分散腐蚀膜的10个试验片进行耐腐蚀性试验以喷雾5%的35℃,500小时500小时,但在表面上制造,但在测试之后,外观变化(锈)没有人。\n\n【0046】\n\n例5:\n\n将实施例1中制备的水性处理溶液作为增稠剂加入到增稠剂中,以具有1重量%的浓度,并将粘度调节至450cp。在乙醇中的超声波洗涤(脱脂处理)之后将待干燥的大量测试片在乙醇中被设定为图3所示的涂层夹具。如图6所示,旋转基座\n\n用上述处理溶液浸渍旋转涂层在其他周端上进行,如图1所示(以300rpm离心30秒)。此后,从旋转基座中留下剩余的涂布夹具,并且试验片在大气中暂时干燥130℃,同时试验片设置为涂层夹具,然后水随后,表面上的处理溶液随后在大气中进行热处理,相对于形成涂膜的试验片,在大气中进行350℃。接下来,具有试验件的涂层夹具再次保持颠倒并再次安装在旋转基座上,并通过在与上述相同的过程中进行浸渍旋转涂层和临时干燥和热处理,在样品锌细颗粒的表面上形成90%重量的锌细颗粒含量的含量。形成的锌细颗粒分散体腐蚀涂层的膜厚度为10μm(来自横截面观察)。相对于实施例1的耐腐蚀性试验相对于10个试验片进行,其具有在表面上制造的锌细颗粒分散体腐蚀膜,但在试验后没有进行外观变化(生锈)。\n\n【0047】\n\n例6:\n\n将实施例2中制备的水性处理溶液作为增稠剂加入到增稠剂中,以具有1重量%的浓度,并将粘度调节至440cp。以与实施例5中相同的方式,如实施例5中那样使用如实施例5的锌细颗粒含量,其在试验片的表面上类似于通过超声洗涤(脱脂处理)干燥15分钟的实施例1。使用该处理液。在60重量%,形成铝细颗粒含量为30重量%的锌 - 铝细颗粒分散腐蚀涂层。形成的锌铝细颗粒分散体腐蚀涂层的膜厚度为10μm(来自横截面观察)。在表面上制造的锌细颗粒分散腐蚀涂层的10个试验片上进行了类似于实施例1的耐腐蚀性测试,但试验后没有外观变化(生锈)。稻田。\n\n【0048】\n\n例7:\n\n在实施例3中制备的水性处理溶液中,将羟乙基纤维素作为增稠剂加入到1重量%的浓度,并将粘度调节至460cp。以与实施例5中相同的方式,如实施例5中那样使用如实施例5的锌细颗粒含量,其在试验片的表面上类似于通过超声洗涤(脱脂处理)干燥15分钟的实施例1。使用该处理液。在55重量%,铝细颗粒含量为25重量%,锡微粒含量为10重量%锌和铝 - 锡微粒分散腐蚀膜。形成的锌铝和锡微粒分散腐蚀涂层的膜厚度为10μm(从横截面的观察)。如实施例1中的10个试验片在表面上的10个试验片上进行相同的耐腐蚀性试验,并且在测试后进行外观变化(生锈)。没有。\n\n【0049】\n\n例8:\n\n20重量%的硅酸盐作为以与实施例1相同的方式制备的原料(SiO2含有3个pH和有机分散剂的转化率(商品名Solspess S20000:由Avicia Co.,Ltd。制造)和平均主要直径为20μm的鳞片状锌细颗粒(概要为20μm×20μm的1μm ×1μm)和平均粒径为3μm。混合锌,铝和锡 - 氧化铝细颗粒分散水溶液,通过加入颗粒状铝细颗粒的氧化铝细颗粒和平均粒径为1μm和1μm平均粒径为1μm,并混合水基培养基。用氢氧化钠,硅酸钠和锌细颗粒和铝细颗粒和锡微粒和氧化铝细颗粒和70重量%的铝细颗粒调节pH至7。 (硅酸乙酯是SIO2就转化率,硅酸盐和锌细颗粒和铝细颗粒和氧化铝微粒和氧化铝细颗粒和氧化铝细颗粒为9.9:55:25:8:2:2:0.1(重量比:硅酸乙酯是SIO的2得到了作为转化率的粘度的粘度。在该水性处理溶液中,将羟乙基纤维素作为增稠剂加入到1重量%的浓度,并将粘度调节至465cp。以与实施例5中相同的方式,如实施例5中那样使用如实施例5的锌细颗粒含量,其在试验片的表面上类似于通过超声洗涤(脱脂处理)干燥15分钟的实施例1。使用该处理液。55%重量的铝细颗粒含量为25\n\n锡微粒含量为8重量%,氧化铝细颗粒含量为2重量%的锌,铝和锡 - 氧化铝细颗粒分散腐蚀涂层。形成的锌铝和锡 - 氧化铝细颗粒分散体腐蚀涂层的膜厚度为10μm(来自横截面观察)。相对于具有在表面上制造的锌和氧化铝细颗粒分散体腐蚀耐腐蚀膜的10个试验片来进行相同的耐腐蚀性试验,但在测试后的外观变化(生锈)没有人。\n\n【0050】\n\n比较例2:\n\n在比较例1中制备的处理溶液中,将羟乙基纤维素加入到增稠剂至1重量%的浓度,并将粘度调节至420cc。使用该处理液,临时干燥条件和热处理条件类似于类似于实施例1的试剂件的液体,其通过超声波清洗(脱脂)干燥,并在乙醇中干燥,如在比较例1中,如实施例5即,形成锌细颗粒分散腐蚀膜,其具有90重量%的锌细颗粒分散体腐蚀涂层。形成的锌细颗粒分散体腐蚀涂层的膜厚度为10μm(来自横截面观察)。当在具有在表面上制造的锌细颗粒分散腐蚀膜的10个试验片上进行与实施例1相同的耐腐蚀性试验,并且当外观(生锈)的外观变化(生锈)是6时,当200小时过去了。有一个人。\n\n【工业可用性】\n\n【0051】\n\n本发明是一种稳定且简单的制造方法,其具有锌细颗粒分散腐蚀膜的稀土基永磁体,例如制造的耐腐蚀稀土永磁体,以及适用于涂层的浸旋涂层可以提供各种形状的薄工件的薄膜形成工业可用性,因为可以提供一种形成方法和工件的涂膜的方法。\n\n[简要描述;简介]\n\n【0052】\n\n【图1】图。图1是本发明的工件的浸旋涂层方法的示例的示意性方法图。\n\n【图2】图。图1是将多个扁平工作作品保持在本发明的旋转基座的基本外周端上的状态的示例的示意图。\n\n图3.图。图1是将多个环形工件保持在本发明的旋转基座的基本外周端部上的状态的示例的示意图。\n\n图4.图。图1是本发明的涂层夹具的示例的示意性透视图。\n\n图5.图。图1是具有本发明的多个平坦工作的涂层夹具的示意图。\n\n6.图。图1是具有本发明的多个扁平工件的涂布夹具的状态的示例的示意图,该涂布夹具安装在旋转基座的基本上外周端部上。\n\n图7.EPMA二次电子图像在实施例4中。\n\n图8相同的锌X射线图像。\n\n图9相同,铁X射线图像。\n\n[标志的说明]\n\n【0053】\n\n1中心轴(旋转轴)\n\n2圈底座\n\n3气缸\n\n4油漆罐\n\n5个电机\n\n11持有会员\n\n12个垫片\n\n13离心跳跃调节栏\n\n14个垫片\n\n15卧式悬架构件\n\n21拿着棍子\n\n22个垫片\n\n23离心跳跃调节栏\n\n24个垫片\n\n25个酒吧状零件\n\n26个垫片\n\nX薄工件工作(平面工作)\n\nY薄的工作(环形工作)\n\nZ-绘制的夹具');
INSERT INTO `os_patent_instruction_text` VALUES (13003, 22832, 'Technical Field\n\n[0001]The present invention relates to a stable and simple method for producing a rare earth metal-based permanent magnet having on the surface thereof a corrosion-resistant film containing fine zinc particles dispersed therein, a corrosion-resistant rare earth metal-based permanent magnet produced by the method, a dip spin coating method being suitable for forming a coating film on thin type work pieces having various shapes, and a method for forming a coating film on a work piece.\n\nBackground Art\n\n[0002]Rare earth metal-based permanent magnets, for instance, R-Fe-B based permanent magnets represented by a Nd-Fe-B based permanent magnet, or R-Fe-N based permanent magnets represented by a Sm-Fe-N based permanent magnet, etc. , utilize inexpensive materials abundant in resources and possess high magnetic properties, and particularly among them, R-Fe-B based permanent magnets are employed today in various fields.\n\n[0003]However, since rare earth metal-based permanent magnets contain a highly reactive rare earth element: R, they are apt to be oxidized and corroded in ambient, and in case they are used without applying any surface treatment, corrosion tends to proceed from the surface in the presence of small acidic or alkaline substance or water to generate rust, and this brings about the degradation and the fluctuation inmagnetic properties. Moreover, in case such a rusty magnet is embedded in a magnetic circuit and a like device, there is fear of scattering rust as to contaminate peripheral components.\n\n[0004]Although there are numerous methods for imparting corrosion-resistance to rare earth metal-based permanent magnets, known is a method for forming a corrosion-resistant film using a silicon compound as the starting raw material on the surface of the rare earth metal-based permanent magnet. Recently, various studies are being made with an aim to further improve the performance of such corrosion-resistant films.\n\n[0005]For instance, in Japanese Patent Laid-Open No. 2000-182813 (Patent literature 1) is proposed a method comprising coating the surface of the rare earth metal-based permanent magnet with a treating solution comprising an aqueous solution of alkali silicate having dispersed therein fine zinc particles, and then applying a heat treatment thereto to obtain a corrosion-resistant film containing fine zinc particles dispersed therein. This method utilizes the anti-corrosive function of the film using alkali silicate as the starting raw material and the sacrificial anti-corrosive function of the fine zinc particles that is potentially base, and is expected as a method capable of imparting high corrosion resistance to the rare earth metal-based permanent magnets. However,in order to form the corrosion-resistant film containing fine zinc particles dispersed therein, this method requires the treating solution to be kept alkaline in order to maintain the fine zinc particles uniformly dispersed in the treating solution; thus, in case the treating solution is applied to the surface of the rare earth metal-based permanent magnet, hydroxides of the metal which constitutes the magnet generate on the surface of the magnet, and, due to the layer comprising such metal hydroxides covering the surface of the magnet, there occur problems such as a difficulty in forming a corrosion-resistant film containing fine zinc particles dispersed therein with high adhesive strength, a tendency in generating cracks due to the poor flexibility of the film using alkali silicate as the starting raw material, a troublesome waste liquid treatment, and the like.\n\n[0006]Further, in Japanese Patent Laid-Open No. 2001-143949 (Patent literature 2) is proposed a method comprising coating the surface of the rare earth metal-based permanent magnet with a treating solution containing silico-organic compound and inorganic fine particles having an average particle diameter of 1 nm to 100 nm, and then applying a heat treatment thereto to obtain a corrosion-resistant film containing fine inorganic particles dispersed therein. This method is proposed in order to form a thin and dense corrosion-resistant film on the surface of the rare earth metal-based permanent magnet using a silico-organic compound as the starting raw material; the internal stress inside the film which forms during the process of the film formation can be relaxed by dispersing fine inorganic particles having the specified average particle diameter in the film component, and hence, the generation of physical defects such as cracks can be thereby prevented from occurring. This method is also expected as a method capable of imparting high corrosion resistance to the rare earth metal-based permanent magnets. However, by taking into consideration that it is difficult to uniformly disperse fine inorganic particles in the order of nanometer size in water, it is necessary for preparing a treating solution to use an organic solvent such as lower alcohol and the like as the main component with a small amount of water added therein, and to prepare a sol solution by subjecting silico-organic compound to a hydrolysis polymerization reaction under an acidic condition while simultaneously dispersing fine inorganic particles. Since the thus prepared treating solution is acidic, in case the treating solution is applied to the surface of the rare earth metal-based permanent magnet, there occur problems such as inducing corrosion of the magnet, or causing the fluctuation in the composition of the treating solution due to the volatilization of the organic solvent; furthermore, there are problems such as causing unfavorable influences to the environment, or requiring a troublesome waste solution treatment.\n\n[0007]JP 60179180A discloses a paint containing zinc dust as an anticorrosive pigment painted on the material to be coated by using water-soluble alkyl silicate as a vehicle.\n\n[0008]Accordingly, the objectives of the present invention are to provide a stable and simple method for producing a rare earth metal-based permanent magnet having on the surface thereof a corrosion-resistant film containing fine zinc particles dispersed therein, a corrosion-resistant rare earth metal-based permanent magnet produced by the method, a dip spin coating method being suitable for forming a coating film on thin type work pieces having various shapes, and a method for forming a coating film on a work piece.\n\nDisclosure of the Invention\n\n[0009]The present invention has been accomplished in the light of the aforementioned points above, according to a first aspect and feature of the present invention, there is provided a method for producing a corrosion-resistant rare earth metal-based permanent magnet, characterized in that it comprises providing an aqueous treating fluid, which contains a hydrolysis polymerization product of alkyl silicate and fine zinc particles having an average particle diameter of 1 µm to 50 µm and has a pH value of 6 to 8 and a viscosity of 1000 cP or less, applying the fluid on the surface of a rare earth metal-based permanent magnet, and subjecting the resultant magnet to a heat treatment at 250°C to 400°C, to thereby form a corrosion-resistant film containing fine zinc particles dispersed therein, wherein the fine zinc particles are flaky particles, and wherein zinc is diffused from the surface of the magnet body to the internal part of the magnet body.\n\n[0010]According to a second aspect and feature of the present invention, in addition to the first feature, the total content of alkyl silicate as the starting raw material and fine zinc particles in the aqueous treating fluid accounts for 40 wt.% to 90 wt.% (where alkyl silicate content is converted to SiO 2  content).\n\n[0011]According to a third aspect and feature of the present invention, in addition to the first feature, the mixing ratio of alkyl silicate as the starting raw material and fine zinc particles in the aqueous treating fluid is 1:1 to 1:19 (in weight ratio: where alkyl silicate content is converted to SiO 2  content).\n\n[0012]According to a fourth aspect and feature of the present invention, in addition to the first feature, an organic dispersing agent is added in the aqueous treating fluid.\n\n[0013]According to a fifth aspect and feature of the present invention, in addition to the first feature, the film thickness of the corrosion-resistant film containing fine zinc particles dispersed therein is 1 µm to 50 µm.\n\n[0014]According to a sixth aspect and feature of the present invention, in addition to the first feature, other fine inorganic particles are additionally dispersed in the corrosion-resistant film containing fine zinc particles dispersed therein.\n\n[0015]According to a seventh aspect and feature of the present invention, in addition to the first feature, the aqueous treating fluid is applied to the surface of the rare earth metal-based permanent magnet by a dip spin coating method.\n\n[0016]According to an eighth aspect and feature of the present invention, in addition to the eighth feature, the method is carried out by using an aqueous treating fluid having a viscosity of 300 cP to 600 cP.\n\n[0017]According to a ninth aspect and feature of the present invention, in addition to the eighth feature, the dip spin coating is carried out by supporting plural rare earth metal-based permanent magnets on approximately the outer peripheral edge portion of a turn table which is rotatable around a vertical center axis that is used as the axis of rotation, immersion coating the rare earth metal-based permanent magnets with the aqueous treating fluid by immersing the turn table having the rare earth metal-based permanent magnets supported thereon in an aqueous treating fluid tank, and after taking out the resulting turn table from the liquid, rotating the turn table to centrifugally cut off the aqueous treating fluid that has adhered in excess to the rare earth metal-based permanent magnets.\n\n[0018]According to a tenth aspect and feature of the present invention, in addition to the tenth feature, the plural rare earth metal-based permanent magnets are supported in approximately a ring-like arrangement on approximately the outer peripheral edge portion of the turn table.\n\n[0019]According to an eleventh aspect and feature of the present invention, in addition to the tenth feature, the rare earth metal-based permanent magnets are thin type magnets, wherein the thin type magnets are shaped in one of the shapes selected from planar, ring-like, and arc-like shape.\n\n[0020]According to a twelfth aspect and feature of the present invention, in addition to the twelfth feature, the thin type magnets are supported in such a manner that the widest plane of the thin type magnet is disposed approximately in parallel with the radial direction of the turn table.\n\n[0021]According to a thirteenth aspect and feature of the present invention, in addition to the thirteenth feature, a coating jig is used as such that in case of attaching it on approximately the outer peripheral edge portion of the turn table, each of the thin type magnets is set apart from each other with the widest plane thereof being placed approximately in parallel with the radial direction of the turn table and in approximately a ring-like arrangement.\n\n[0022]According to a fourteenth aspect and feature of the present invention, in addition to the fourteenth feature, after completion of a dip spin coating, the coating jig is detached from the turn table while leaving the thin type magnets still set thereon, and the thin type magnets still set on the coating jig are subjected to a heat treatment at an arbitrary place.\n\n[0023]According to a fifteenth aspect and feature of the present invention, there is provided a rare earth metal-based permanent magnet, characterized by having on the surface thereof a corrosion-resistant film containing fine zinc particles having an average particle diameter of 1 µm to 50 µm being dispersed in the film component using alkyl silicate as the starting raw material, wherein the fine zinc particles are flaky particles, and wherein zinc is diffused from the surface of the magnet body to the internal part of the magnet body.\n\n[0024]According to a sixteenth aspect and feature of the present invention, in addition to the seventeenth feature, the corrosion-resistant film contains 50 wt.% to 95 wt.% of fine zinc particles.\n\n[0025]According to a seventeenth aspect and feature of the present invention, there is provided a dip spin coating method for producing a corrosion-resistant rare earth metal-based permanent magnet, characterized in that it comprises supporting plural work pieces on approximately the outer peripheral edge portion of a turn table which is rotatable around a vertical center axis that is used as the axis of rotation, immersion coating the work pieces with a paint by immersing the turn table having the work pieces supported thereon in a paint tank, and after taking out the resulting turn table from the liquid, rotating the turn table to centrifugally cut off the paint that has adhered in excess to the work pieces.\n\n[0026]According to an eighteenth aspect and feature of the present invention, there is provided a method for forming a coating film of an aqueous treating fluid for producing a corrosion-resistant rare earth metal-based permanent magnet, characterized in that it comprises, a coating jig is used as such that in case of attaching it on approximately the outer peripheral edge portion of a turn table which is rotatable around a vertical center axis that is used as the axis of rotation, each of work pieces is set apart from each other in approximately a ring-like arrangement, and it further comprises immersion coating the work pieces with a paint by immersing the turn table on which the coating jig having the work pieces set thereon is attached in a paint tank; taking out the resulting turn table from the liquid and rotating the turn table to centrifugally cut off the paint that has adhered in excess to the work pieces; detaching, from the turn table, the coating jig having the work pieces still set thereon; and if desired, subjecting the work pieces still set on the coating jig to a dry treatment at an arbitrary place.\n\n[0027]Thus, in accordance with the present invention, there are provided a stable and simple method for producing a rare earth metal-based permanent magnet having on the surface thereof a corrosion-resistant film containing fine zinc particles dispersed therein, a corrosion-resistant rare earth metal-based permanent magnet produced by the method, a dip spin coating method being suitable for forming a coating film on thin type work pieces having various shapes, and a method for forming a coating film on a work piece.\n\nBrief Description of the Drawings\n\n[0028] FIG. 1 is a schematic process flow diagram showing an example of a dip spin coating method for a work piece according to the present invention; FIG. 2 is a schematic diagram showing an example of a state in which plural planar work pieces are supported on approximately the outer peripheral edge portion of a turn table according to the present invention; FIG. 3 is a schematic diagram showing an example of a state in which plural ring-shaped work pieces are supported on approximately the outer peripheral edge portion of a turn table according to the present invention; FIG. 4 is a schematic oblique view of an example of a coating jig according to the present invention; FIG. 5 is a schematic diagram showing a coating jig having plural planar work pieces set thereon according to the present invention; FIG. 6 is a schematic diagram showing an example of a state in which a coating jig having plural planar work pieces set thereon is attached on approximately the outer peripheral edge portion of a turn table according to the present invention; FIG. 7 is a secondary electron image obtained by EPMA in Example 4; FIG. 8 is an X-ray image of zinc obtained in the same example; and FIG. 9 is an X-ray image of iron obtained in the same example. \n\nBest Mode for Carrying Out the Invention\n\n[0029]In the present invention, a corrosion-resistant film containing fine zinc particles dispersed therein is formed by applying an aqueous treating fluid which contains a hydrolysis polymerization product of alkyl silicate and fine zinc particles having an average particle diameter of 1 µm to 50 µm and has a pH value of 6 to 8 and a viscosity of 1000 cP or less on the surface of a rare earth metal-based permanent magnet, followed by then subjecting the resultant magnet to a heat treatment at 250°C to 400°C. The thus formed corrosion-resistant film containing fine zinc particles dispersed therein not only imparts high corrosion resistance to the rare earth metal-based permanent magnet, but also has high adhesive strength because zinc is internally diffused from the surface of the magnet body.\n\n[0030]Alkyl silicates used herein are such expressed by the general formula: Si n O (n-1) (OR) (2n+2) . In the formula, Rrepresents an alkyl group exemplified by lower alkyl groups having 1 to 4 carbon atoms, such as methyl group, ethyl group, propyl group, butyl group, and the like, but suitable among them is ethyl group (i.e., ethyl silicate) because it not only is inexpensive, but also is nontoxic and has superior handling properties. Furthermore, n represents 1 or higher integer, however, in order to form a dense film, n preferably is an integer of 10 or lower.\n\n[0031]Further, fine zinc particles having an average particle diameter of 1 µm to 50 µm are used. This is because, if the average particle diameter is smaller than 1 µm, it is feared that the fine zinc particles undergo secondary aggregation in the aqueous treating fluid; on the other hand, if the average particle diameter is larger than 50 µm, it is feared that the fine zinc particles sediment in the aqueous treating fluid; in either case, there is fear of making it difficult to prepare an aqueous treating fluid which contains fine zinc particles uniformly dispersed therein and which have excellent preservation stability. The average particle diameter of the fine zinc particles is preferably 2 µm to 30 µm, and more preferably, 5 µm to 20 µm. The fine zinc particles may be of any shape, but to minimize the generation of pinholes in the corrosion-resistant film containing fine zinc particles dispersed therein, it is advantageous if the fine zinc particles are densely laminated and packed in the component of the film; furthermore, in order to diffuse zinc from the surface of the magnet body to the internal part, it is advantageous if the fine zinc particles have a larger contact area with respect to the magnet body. Accordingly, from the above points of view, fine zinc particles are preferably flaky particles. In case fine zinc particles are flaky particles, the average particle diameter means the average major diameter.\n\n[0032]The total content of alkyl silicate as the starting raw material and fine zinc particles in the aqueous treating fluid is preferably 40 wt.% to 90 wt.% (where alkyl silicate content is converted to SiO 2  content), and more preferably, 60 wt.% to 80 wt.%. If the total content should be lower than 40 wt.%, it is feared that the total process steps would be increased to more than those necessary in obtaining a corrosion-resistant film containing fine zinc particles dispersed therein at a film thickness capable of exhibiting sufficiently properties; on the other hand, if the total content should be higher than 90 wt.%, it is feared that the preservation stability of the aqueous treating fluid would be affected.\n\n[0033]The mixing ratio of alkyl silicate as the starting raw material and fine zinc particles in the aqueous treating fluid is preferably 1:1 to 1:19 (in weight ratio: where alkyl silicate content is converted to SiO 2  content), and more preferably, 1:3 to 1:10, such that the content of the fine zinc particles should account for 50 wt.% to 95 wt.% of the corrosion-resistant film containing fine zinc particles dispersed therein. If the content of the fine zinc particles in the resulting corrosion-resistant film containing fine zinc particles dispersed therein should be lower than 50 wt.%, it is feared that the effect of dispersing fine zinc particles in the film component would not be sufficiently exhibited; on the other hand, if it should be higher than 95 wt.%, it is feared that the main properties as the corrosion-resistant film using alkyl silicate as the starting raw material would not be fully exhibited.\n\n[0034]The pH value of the aqueous treating fluid to be applied to the surface of the rare earth metal-based permanent magnet is restricted in a range of 6 to 8, because if the pH value should be lower than 6, as described in the patent literature 2 above, there is fear of bringing about corrosion of the rare earth metal-based permanent magnet; on the other hand, if the pH value should be higher than 8, as described in the patent literature 1 above, it is feared that no corrosion-resistant film containing fine zinc particles dispersed therein would be formed with high adhesive strength.\n\n[0035]The viscosity of the aqueous treating fluid to be applied to the surface of the rare earth metal-based permanent magnet is restricted to 1000 cP or less, because if the viscosity of the aqueous treating fluid should exceed 1000 cP, it is feared that it becomes difficult to form a corrosion-resistant film containing fine zinc particles dispersed therein and having an uniform film thickness.\n\n[0036]An aqueous treating fluid having excellent homogeneity can be prepared, preferably, for example, by adding fine zinc particles having an average particle diameter of 1 µm to 50 µm into an aqueous solution obtained by subjecting alkyl silicate to a hydrolysis polymerization reaction under an acidic condition (at a pH value of ca. 3 to 4) or under an alkaline condition (at a pH value of ca. 10 to 12), adjusting the pH value in a range of 6 to 8 and maintaining or adjusting the viscosity to 100 cP or less (the viscosity is, more preferably, 50 cP or less and further preferably, 25 cP or less). In case alkyl silicate is subjected to a hydrolysis polymerization reaction under an acidic condition, the pH value is adjusted, for instance, by using sodium hydroxide and the like. In case alkyl silicate is subjected to a hydrolysis polymerization reaction under an alkaline condition, the pH value is adjusted, for instance, by using hydrochloric acid and the like.\n\n[0037]In order to form a dense film, alkyl silicate is subjected to a hydrolysis polymerization reaction at the stage of preparing the aqueous treating fluid. The hydrolysis polymerization reaction of alkyl silicate need not be such capable of completing the hydrolysis polymerization reaction on the entire alkyl silicate, but an embodiment as such in which a part of alkyl silicate undergoes the hydrolysis polymerization reaction is sufficient. The degree of the hydrolysis polymerization reaction can be adjusted by controlling the amount of added acid or base, or by controlling the amount of water used as the medium in carrying out the hydrolysis polymerization reaction. If the degree of the hydrolysis polymerization reaction of alkyl silicate is high, there may be a case in which the viscosity of the aqueous solution exceeds 100 cP. Even in case the viscosity should once exceed 100 cP, the viscosity can be lowered by adding warm water and the like; however, in order to achieve an aqueous treating fluid with higher homogeneity, it is preferred to properly take means, such as adding water and the like, for preventing the viscosity from exceeding 100 cP in case the viscosity of the aqueous solution tends to exceed 100 cP during the hydrolysis polymerization reaction. Furthermore, in case it is desired to control the surface tension of the aqueous treating fluid in an appropriate value or the like with an objective of increasing ease in forming a film with the desired film thickness, for instance, a cellulose-based thickener (for example, a water-soluble cellulose ether exemplified by hydroxyethyl cellulose, methyl cellulose, methyl hydroxypropyl cellulose, ethyl hydroxyethyl cellulose, methyl ethyl cellulose, and so on) and the like, may be added in the aqueous treating fluid to adjust the viscosity thereof. In case the viscosity of the aqueous treating fluid is desired to be set to 100 cP or higher with an objective of increasing the thickness of the film to be formed, etc., it is preferred that a thickener is added into an once prepared aqueous treating fluid to increase the viscosity.\n\n[0038]In case fine zinc particles are added into an aqueous solution obtained by subjecting alkyl silicate to a hydrolysis polymerization reaction, it is preferred to uniformly disperse the fine zinc particles in the aqueous treating fluid using an organic dispersing agent. The organic dispersing agent can be added into the aqueous treating fluid, for instance, by feeding fine zinc particles into water having added therein the organic dispersing agent, thereby preparing a fine zinc particles dispersed aqueous medium containing fine zinc particles uniformly dispersed therein, and then mixing the fine zinc particles dispersed aqueous medium with the aqueous solution obtained by subjecting alkyl silicate to a hydrolysis polymerization reaction. As the organic dispersing agent preferably used from the viewpoint of affinity with fine zinc particles and cost are an anionic dispersing agent (for example, an aliphatic polycarboxylic acid, a salt of polyether polyester carboxylic acid, a salt of high molecular polyester acid polyamine, a salt of high molecular polycarboxylic acid long chain amine, etc.), a nonionic dispersing agent (for example, a carboxylic acid salt, a sulfonic acid salt, or an ammonium salt of polyoxyethylene alkyl ether or sorbitan ester, etc.), a high molecular dispersing agent (for example, a carboxylic acid salt, a sulfonic acid salt, or an ammonium salt of water-soluble epoxy, a styrene-acrylic acid copolymer, a glue, etc.), and the like.\n\n[0039]Further, in order to form a corrosion-resistant film containing fine zinc particles dispersed therein at a film thickness capable of exhibiting sufficiently high properties without repeating the production process in excess, the viscosity of the aqueous treating fluid to be applied on the surface of the rare earth metal-based permanent magnet is preferably 5 cP or higher.\n\n[0040]On applying the aqueous treating fluid on the surface of the rare earth metal-based permanent magnet, applicable are a dip coating method, a spray method, a spin coating method, a dip spin coating method, and the like. Furthermore, in order to improve the adhesive strength of the corrosion-resistant film containing fine zinc particles dispersed therein, which is formed on the surface of the rare earth metal-based permanent magnet, a sand blasting treatment or a pickling treatment may be applied to the surface of the magnet before coating the aqueous treating fluid thereon.\n\n[0041]In order to form a coating film of aqueous treating fluid with further improved uniformity, the aqueous treating fluid is preferably applied to the surface of the rare earth metal-based permanent magnet by a dip spin coating method. In particular, a dip spin coating is preferably carried out by supporting plural rare earth metal-based permanent magnets on approximately the outer peripheral edge portion of a turn table which is rotatable around a vertical center axis that is used as the axis of rotation, immersion coating the rare earth metal-based permanent magnets with the aqueous treating fluid by immersing the turn table having the rare earth metal-based permanent magnets supported thereon in an aqueous treating fluid tank, and after taking out the resulting turn table from the liquid, rotating the turn table to centrifugally cut off the aqueous treating fluid that has adhered in excess to the rare earth metal-based permanent magnets.\n\n[0042]As a method for forming a thin coating film on the surface of a thin type work piece at a film thickness of, for example, about 10 µm, there is sometimes employed a dip spin coating method, which comprises immersion coating the work piece with a paint by immersing the work piece in a paint tank, and after taking out the resulting work piece from the liquid, rotating it at high speed to cut off the paint that has adhered in excess to the work piece. As a dip spin coating method for thin type work pieces known in the art, for instance, there can be mentioned a method for coating an optical disk with a protective film proposed in Japanese Patent Laid-Open No. 201088/1995. This method comprises vertically setting plural substrates at a predetermined interval on the horizontal main shaft; immersing the substrates, except for the central portion , in the protective film material while rotating them at low speed around the main shaft to thereby coat the substrates with the material; drawing out the resulting product from the material; and finally, cutting off the material by high speed rotation. Furthermore, in Japanese Patent Laid-Open No. 86271/1991 is proposed a dip spin coating method characterized by that it comprises a step of centrifugally cutting off the paint, which is applied to the object to be coated that is in a state supported by a hanger in such a manner that the coating plane (flat plane) is set approximately horizontally, in which whole body inclusive of the hanger and the object to be coated is rotated around the axis of rotation set to the plumb line passing through the center of gravity of the whole body. Further, in Japanese Patent Laid-Open No. 2000-164556 is proposed a method comprising using a wafer carrier, in which a pair of supporting members having plural grooves thereon are set in such a manner that the side having the grooves thereon may be disposed faced to each other; the wafers are supported by their peripheral part with the facing grooves of the wafer carrier, and the liquid is centrifugally cut off from the plural wafers supported on the carrier by rotating the carrier in such a manner that the grooves may be faced approximately in the accelerating direction of rotation, and is dried.\n\n[0043]In case a dip spin coating method is employed to a large number of thin type work pieces, it is preferred that an uniform coating is realized for all of the work pieces irrespective of the shape of the work pieces and without causing the fluctuation in the film thickness. However, in the light of such circumstances, all the methods described in the patent literatures above have disadvantages. More specifically, the method described in Japanese Patent Laid-Open No. 201088/1995 requires holding the work pieces by the center portion; accordingly, the method is disadvantageous in that it is only applicable to ring-shaped work pieces. Furthermore, this method comprises rotating the work pieces themselves by the friction force generated by bringing the horizontal main shaft in contact with the inner peripheral plane of the ring-shaped work pieces; accordingly, this method has a shortcoming as such that, if the friction force between the work pieces and the main shaft fluctuates, the rotation speed of the work pieces fluctuates, and it is thereby feared that an uniform coating for all of the work pieces cannot be realized. Moreover, since it is difficult to rotate the work pieces at high speed, this method also suffers another shortcoming as such that the paint adhered in excess cannot be sufficiently cut off in case a paint with high viscosity (for instance, such having a viscosity exceeding 500 cP) is applied to the surface of the work pieces. Further, in the method described in Japanese Patent Laid-Open No. 86271/1991, the flat planes of the work pieces are held approximately horizontally; accordingly, the method is disadvantageous in that there is fear of causing difference in the amount of the paint adhered to the upper and the lower planes. Furthermore, in the method described in Japanese Patent Laid-Open No. 2000-164556, the work pieces are supported in such a manner that one of the flat planes is disposed opposed to the axis of rotation; hence, the rotation speed is different for each work piece depending on the holding place. Accordingly, this method has a disadvantage as such that an uniform coating for all of the work pieces cannot be realized.\n\n[0044]However, the dip spin coating method proposed in the present invention enables mass production of uniform coating films on thin type work pieces without generating the fluctuati', '技术领域 \n\n [0001] 本发明涉及一种稳定而简单的稀土金属类永磁体的制造方法,该稀土金属类永磁体在其表面上具有分散有细锌颗粒的耐蚀膜,其通过以下方法制备: 该方法,适用于在具有各种形状的薄型工件上形成涂膜的浸涂法以及在工件上形成涂膜的方法。 \n\n  背景技术 \n\n [0002] 稀土金属永磁体,例如,以Nd-Fe-B基永磁体为代表的R-Fe-B基永磁体,或以Sm-Fe-N基永磁体为代表的R-Fe-N基永磁体 磁体等利用资源丰富且廉价的磁性材料,并且具有高磁性能,特别是其中,R-Fe-B基永磁体目前在各个领域中使用。 \n\n [0003] 然而,由于稀土金属基永磁体包含高反应性稀土元素:R,它们易于在环境中被氧化和腐蚀,并且如果在未进行任何表面处理的情况下使用它们,则腐蚀倾向于从表面进行 在少量的酸性或碱性物质或水的存在下会生锈,这会导致磁性能的下降和波动。 此外,在将这种生锈的磁铁埋入磁路等的情况下,担心会散布生锈而污染周围的部件。 \n\n [0004] 赋予稀土类金属永磁体耐蚀性的方法很多,但已知有一种以硅化合物为原料在稀土类金属永磁体的表面上形成耐蚀膜的方法。 磁铁。 近来,为了进一步改善这种耐腐蚀膜的性能而进行了各种研究。 \n\n [0005] 例如,在日本专利特开2000-182813号公报(专利文献1)中提出了一种方法,该方法包括用包含分散在其中的碱金属硅酸盐水溶液的处理溶液涂覆稀土金属基永磁体的表面。 细的锌颗粒,然后对其进行热处理,以获得包含分散在其中的细的锌颗粒的耐腐蚀膜。 该方法利用以碱金属硅酸盐为起始原料的膜的防腐蚀功能和潜在的碱锌细颗粒的牺牲性防腐蚀功能,并且有望作为一种能够赋予金属高耐腐蚀性的方法。 稀土金属基永磁体。 然而,为了形成包含分散在其中的锌细颗粒的耐腐蚀膜,该方法需要将处理溶液保持碱性,以保持细锌颗粒均匀地分散在处理溶液中。 因此,如果将处理溶液施加到稀土金属基永磁体的表面,则构成磁体的金属的氢氧化物在磁体的表面上产生,并且由于包含这种金属氢氧化物的层覆盖了磁体的表面。 在磁铁的表面上,会出现诸如难以形成包含分散有高粘附强度的细锌颗粒的耐腐蚀膜,由于使用碱金属硅酸盐作为起始原料的膜的柔韧性差而产生裂纹的趋势等问题。 材料,麻烦的废液处理等。 \n\n [0006] 此外,在日本特开2001-143949号公报(专利文献2)中提出了一种方法,该方法包括用含有硅有机化合物和具有以下特征的无机细颗粒的处理溶液涂覆稀土金属基永磁体的表面。 将平均粒径设定为1nm至100nm,然后对其进行热处理以获得包含分散在其中的无机细颗粒的耐腐蚀膜。 提出该方法是为了以硅有机化合物为原料在稀土类永磁体的表面形成致密且薄的耐蚀膜。 通过将具有规定的平均粒径的无机微粒分散在膜成分中,可以缓和在膜形成过程中形成的膜内部的内部应力,因此可以防止裂纹等物理缺陷的产生。 发生。 还期望该方法为能够对稀土金属类永磁体赋予高耐腐蚀性的方法。 但是,考虑到难以将纳米级的无机细颗粒均匀地分散在水中,因此需要制备以低级醇等有机溶剂为主要成分的处理液。 在其中添加少量的水,并通过使有机硅化合物在酸性条件下进行水解聚合反应,同时分散无机细颗粒来制备溶胶溶液。 由于这样制备的处理溶液是酸性的,因此如果将处理溶液施加到稀土金属基永磁体的表面,则会出现诸如引起磁体腐蚀或引起处理成分波动的问题。 由于有机溶剂挥发而产生的溶液; 此外,还存在诸如对环境造成不利影响或需要麻烦的废液处理的问题。 \n\n [0007] JP 60179180A公开了一种包含锌粉作为抗腐蚀颜料的涂料,该涂料通过使用水溶性烷基硅酸盐作为媒介物而被涂在待涂覆的材料上。 \n\n [0008] 因此,本发明的目的是提供一种稳定且简单的方法,用于生产稀土金属基永磁体,在其表面上具有分散有细锌颗粒的耐腐蚀膜,耐腐蚀稀土金属。 通过该方法制造的铝基永磁体,适用于在具有各种形状的薄型工件上形成涂膜的浸涂法和在工件上形成涂膜的方法。 \n\n  发明内容 \n\n [0009] 鉴于以上要点完成了本发明,根据本发明的第一方面和特征,提供了一种用于生产耐腐蚀稀土金属基永磁体的方法,其特征在于, 包括提供水性处理液,其包含硅酸烷基酯和锌细颗粒的水解聚合产物,所述锌细颗粒的平均粒径为1μm至50μm,pH值为6至8,粘度为1000 cP或更小, 在稀土金属基永磁体的表面上的流体,并在250℃至400℃下对所得的磁体进行热处理,从而形成其中分散有细锌颗粒的耐腐蚀膜,其中, 细的锌颗粒是片状颗粒,并且其中锌从磁体的表面扩散到磁体的内部。 \n\n [0010] 根据本发明的第二方面和特征,除第一特征外,水性处理液中作为起始原料的硅酸烷基酯和细锌颗粒的总含量占40重量%至90重量%。  (其中硅酸烷基酯的含量转换为SiO 2的含量)。 \n\n [0011] 根据本发明的第三方面和特征,除第一特征外,作为起始原料的硅酸烷基酯与细锌颗粒在水性处理液中的混合比为1:1至1:19(以重量计)。 比例:其中硅酸烷基酯含量转换为SiO 2含量)。 \n\n [0012] 根据本发明的第四方面和特征,除了第一特征之外,在水性处理液中添加有机分散剂。 \n\n [0013] 根据本发明的第五方面和特征,除第一特征外,其中分散有细锌颗粒的耐腐蚀膜的膜厚度为1μm至50μm。 \n\n [0014] 根据本发明的第六方面和特征,除了第一特征之外,其他细无机颗粒还分散在含有分散在其中的细锌颗粒的耐腐蚀膜中。 \n\n [0015] 根据本发明的第七方面和特征,除了第一特征之外,通过浸涂法将水性处理液施加到稀土金属基永磁体的表面上。 \n\n [0016] 根据本发明的第八方面和特征,除了第八特征之外,该方法通过使用粘度为300cP至600cP的水性处理液来进行。 \n\n [0017] 根据本发明的第九方面和特征,除第八方面外,浸涂通过在旋转台的大致外周边缘部上支撑多个稀土类永磁体来进行。 围绕用作旋转轴的垂直中心轴,通过将其上支撑着稀土金属基永磁体的转台浸入含水处理液中,将含水金属处理液浸入稀土金属基永磁体。 储罐,然后从液体中取出转盘,旋转转盘以离心分离掉附着在稀土金属基永磁体上的水处理液。 \n\n [0018] 根据本发明的第十方面和特征,除了第十特征之外,多个稀土金属基永磁体以近似环状的方式支撑在转台的大致外周边缘部分上。 \n\n [0019] 根据本发明的第十一方面和特征,除了第十特征之外,稀土金属基永磁体是薄型磁体,其中所述薄型磁体被成形为选自平面,环形或环形的形状之一。 喜欢,和弧形的形状。 \n\n [0020] 根据本发明的第十二方面和特征,除了所述第十二特征之外,所述薄型磁体以如下方式被支撑:所述薄型磁体的最宽平面大致平行于所述转弯的径向布置。 表。 \n\n [0021] 根据本发明的第十三方面和特征,除了第十三特征之外,还使用涂覆夹具,使得在将其附接到转台的大约外周边缘部分的情况下,每个薄型磁体 它们的最宽平面被设置成彼此分开,其最宽平面大致平行于转台的径向并呈环形布置。 \n\n [0022] 根据本发明的第十四方面和特征,除了第十四特征之外,在浸涂完成后,将涂覆夹具从转台上取下,同时保持薄型磁体和薄型磁体在其上。 仍然放置在涂层夹具上的磁铁在任意位置进行热处理。 \n\n [0023] 根据本发明的第十五方面和特征,提供了一种稀土金属基永磁体,其特征在于在其表面上具有包含平均粒径为1μm至50的细锌颗粒的耐腐蚀膜。 使用硅酸烷基酯作为起始原料将μm分散在膜成分中,其中,锌的细颗粒为薄片状,并且锌从磁体的表面扩散至磁体的内部。 \n\n [0024] 根据本发明的第十六方面和特征,除所述第十七特征外,所述耐腐蚀膜包含50重量%至95重量%的细锌颗粒。 \n\n [0025] 根据本发明的第十七方面和特征,提供了一种用于生产耐腐蚀稀土金属基永磁体的浸涂法,其特征在于,其包括在大约外周缘部分上支撑多个工件。 可以围绕用作旋转轴的垂直中心轴旋转的转台的原理是,将其上支撑有工件的转台浸入油漆罐中,然后用油漆浸涂工件。 从液体中获得转盘,旋转转盘以离心分离掉多余粘附在工件上的油漆。 \n\n [0026] 根据本发明的第十八方面和特征,提供了一种用于形成用于生产耐腐蚀稀土金属基永磁体的水性处理液的涂膜的方法,其特征在于,其包括涂布夹具。 这样使用的方式是,在将其安装在可绕作为旋转轴的垂直中心轴旋转的转台的大致外周边缘部分的情况下,各工件彼此大致分开。 环形布置,并且进一步包括通过将转台(其上放置有放置有工件的涂覆夹具)安装在油漆罐中,将油漆浸入工件中。 从液体中取出所得的转盘,并旋转转盘以离心分离掉过量粘附在工件上的涂料。 从转盘上卸下仍放置有工件的涂覆夹具; 如果需要,对仍放置在涂布夹具上的工件进行任意位置的干燥处理。 \n\n [0027] 因此,根据本发明,提供了一种稳定且简单的方法,用于生产稀土金属基永磁体,在其表面上具有分散在其中的细锌颗粒的耐腐蚀膜,耐腐蚀稀土。 通过该方法制造的金属基永磁体,浸涂法适合在具有各种形状的薄型工件上形成涂膜的浸涂法以及在工件上形成涂膜的方法。 \n\n  附图的简要说明 \n\n [0028]  图。  1个  图3是示意性工艺流程图,示出了根据本发明的用于工件的浸涂法的实例。  图。  2  图3是表示在本发明的旋转台的大致外周缘部上支承有多个平面工件的状态的一例的示意图。  图。  3  图3是表示在本发明的转台的大致外周缘部上支承有多个环状的工件的状态的一例的示意图。  图。  4  图2是本发明的涂布夹具的一例的示意立体图。  图。  5  图3是表示本发明的设置有多个平面工件的涂布夹具的示意图。  图。  6  图2是表示在本发明的转台的大致外周缘部上安装有设置有多个平面工件的涂布夹具的状态的一例的示意图。  图。  7  是实施例4中由EPMA获得的二次电子图像。  图。  8  图4是在同一实施例中得到的锌的X射线图像。 和  图。  9 是在相同实例中获得的铁的X射线图像。 \n\n  实施发明的最佳方式 \n\n [0029] 在本发明中,通过施加包含硅酸烷基酯和平均粒径为1μm至50μm的锌细颗粒的水解聚合产物的水性处理液来形成其中分散有锌细颗粒的耐腐蚀膜。 在稀土金属基永磁体的表面上的pH值为6至8且粘度为1000cP以下,然后对所得的磁体在250℃至400℃下进行热处理。 这样形成的包含分散有锌细颗粒的耐腐蚀膜不仅赋予稀土类金属永磁体高的耐腐蚀性,而且由于锌从磁体主体的表面内部扩散而具有高的粘合强度。 \n\n [0030] 本文所用的烷基硅酸盐以通式Si n O(n-1)(OR)(2n + 2)表示。 式中,R表示以甲基,乙基,丙基,丁基等碳原子数为1〜4的低级烷基为代表的烷基,其中合适的是乙基(硅酸乙酯)  ),因为它不仅价格便宜,而且无毒且具有出色的处理性能。 此外,n表示1以上的整数,但是,为了形成致密的膜,n优选为10以下的整数。 \n\n [0031] 此外,使用平均粒径为1μm至50μm的锌细颗粒。 这是因为,如果平均粒径小于1μm,则担心细锌颗粒在水性处理液中发生二次凝集。 另一方面,如果平均粒径大于50μm,则担心细锌颗粒沉淀在水性处理液中。 在任何一种情况下,都有可能难以制备含有均匀分散在其中的细锌颗粒的水性处理液,其具有优异的保存稳定性。 锌细颗粒的平均粒径优选为2μm至30μm,并且更优选为5μm至20μm。 细锌颗粒可以是任何形状,但是为了使在其中分散有细锌颗粒的耐腐蚀膜中的针孔的产生最小化,如果细锌颗粒紧密地层压并堆积在膜的成分中是有利的。 此外,为了使锌从磁体的表面扩散到内部,有利的是,细的锌颗粒相对于磁体具有更大的接触面积。 因此,从上述观点出发,细锌颗粒优选为片状颗粒。 如果细的锌颗粒是片状颗粒,则平均粒径是指平均长径。 \n\n [0032] 水性处理液中作为起始原料的硅酸烷基酯和细锌颗粒的总含量优选为40重量%至90重量%(其中硅酸烷基酯的含量转换为SiO 2含量),并且更优选为60重量%。  。%至80 wt。%。 如果总含量低于40wt。%,恐怕总工艺步骤会增加到超过获得其中包含细锌颗粒的抗腐蚀膜的必要步骤,所述细锌颗粒以能够充分展现的膜厚分散在其中。 属性 另一方面,如果总含量高于90重量%,则担心会影响水性处理液的保存稳定性。 \n\n [0033] 作为原料的硅酸烷基酯与水处理液中的锌细粒的混合比例优选为1:1〜1:19(重量比:硅酸烷基酯的含量换算为SiO 2含量)。  1:3至1:10,使得锌细颗粒的含量应占其中分散有锌细颗粒的耐腐蚀膜的50重量%至95重量%。 如果在所得的其中分散有细锌颗粒的耐腐蚀膜中的细锌颗粒的含量应低于50重量%,则担心不能充分发挥将细锌颗粒分散在膜成分中的效果。  ; 另一方面,如果高于95重量%,则恐怕不能充分发挥作为以硅酸烷基酯为原料的耐蚀膜的主要性能。 \n\n [0034] 如专利文献中所述,要施加到稀土金属基永磁体的表面的水性处理液的pH值限制在6至8的范围内,因为如果pH值应低于6, 上述2中,担心会引起稀土金属系永磁体的腐蚀。 另一方面,如上述专利文献1中所述,如果pH值应高于8,则担心不会形成具有高粘附强度的分散有细锌颗粒的耐腐蚀膜。 \n\n [0035] 施加于稀土金属类永磁体的表面的水性处理液的粘度被限制在1000cP以下,因为如果水性处理液的粘度应超过1000cP,则担心会变得 难以形成包含分散在其中的锌细颗粒并且具有均匀的膜厚度的耐腐蚀膜。 \n\n [0036] 均质性优异的水性处理液例如可以优选通过在酸性条件下将平均粒径为1μm以上且50μm以下的锌微粒添加到使硅酸烷基酯进行水解聚合反应而得到的水溶液中而制备。  (在大约3至4的pH值下)或在碱性条件下(在大约10至12的pH值下),将pH值调节在6至8的范围内,并将粘度保持或调节到100 cP 以下(粘度更优选为50cP以下,进一步优选为25cP以下)。 在使硅酸烷基酯在酸性条件下进行水解聚合反应的情况下,例如通过使用氢氧化钠等来调节pH值。 在使硅酸烷基酯在碱性条件下进行水解聚合反应的情况下,例如通过使用盐酸等来调节pH值。 \n\n [0037] 为了形成致密的膜,在制备水性处理液的阶段使硅酸烷基酯进行水解聚合反应。 硅酸烷基酯的水解聚合反应不必能够在整个硅酸烷基酯上完成水解聚合反应,但是其中一部分硅酸烷基酯进行水解聚合反应的实施方案就足够了。 水解聚合反应的程度可以通过控制添加的酸或碱的量或通过控制在进行水解聚合反应中用作介质的水的量来调节。 如果烷基硅酸盐的水解聚合反应的程度高,则可能存在水溶液的粘度超过100cP的情况。 即使粘度一旦超过100 cP,也可以通过添加温水等降低粘度。 然而,为了获得具有更高均质性的水性处理液,优选在水溶液的粘度趋于超过100的情况下适当地采取诸如加水等手段以防止粘度超过100cP。 水解聚合反应过程中的cP。 此外,在期望将水性处理液的表面张力控制在适当的值等的情况下,目的是增加容易地形成具有期望的膜厚的膜的目的,例如,纤维素类增稠剂(用于 例如,可以在水性处理液中添加水溶性纤维素醚,例如以羟乙基纤维素,甲基纤维素,甲基羟丙基纤维素,乙基羟乙基纤维素,甲基乙基纤维素等为代表的水溶性纤维素醚,以调节其粘度。 为了增加所形成的膜的厚度等而期望将水性处理液的粘度设定为100cP以上的情况下,优选在一次制备的水性处理中添加增稠剂。 流体以增加粘度。 \n\n [0038] 在将细锌颗粒添加到通过使硅酸烷基酯进行水解聚合反应而获得的水溶液中的情况下,优选使用有机分散剂将细锌颗粒均匀地分散在水性处理液中。 例如,可以通过将锌细颗粒供入其中添加有有机分散剂的水中,从而将有机分散剂添加到水性处理液中,从而制备包含均匀分散在其中的锌细颗粒的水分散锌细颗粒的水性介质,然后 将分散有细锌颗粒的水性介质与通过使硅酸烷基酯进行水解聚合反应而获得的水溶液混合。 从与锌微粒的亲和性和成本的观点出发,优选使用的有机分散剂为阴离子分散剂(例如,脂肪族多元羧酸,聚醚聚酯羧酸的盐,高分子聚酯酸聚胺的盐, 高分子多元羧酸长链胺的盐等),非离子分散剂(例如聚氧乙烯烷基醚或脱水山梨糖醇酯的羧酸盐,磺酸盐或铵盐等),高 分子分散剂(例如,水溶性环氧的羧酸盐,磺酸盐或铵盐,苯乙烯-丙烯酸共聚物,胶水等)等。 \n\n [0039] 此外,为了形成包含分散有细锌颗粒的耐腐蚀膜,其中所述锌细颗粒以能够表现出足够高的性能而不会过多地重复生产过程的膜厚分散在其中,要涂覆在所述表面上的水性处理液的粘度。 稀土金属类永磁体优选为5cP以上。 \n\n [0040] 在将水性处理液涂布在稀土类永磁体的表面上时,可以采用浸涂法,喷涂法,旋涂法,浸涂法等。 另外,为了提高在稀土类金属永磁体的表面上形成的,分散有锌的微粒的耐蚀膜的密合强度,可以实施喷砂处理或酸洗处理。 在将水性处理液涂覆到磁体表面之前,先将其表面处理。 \n\n [0041] 为了形成均匀性进一步提高的水性处理液的涂膜,优选通过浸涂法将水性处理液涂布在稀土金属类永磁体的表面上。 特别地,优选通过在转台的大约外周边缘部分上支撑多个稀土金属基永磁体来进行浸涂,该转台可绕用作旋转,浸没轴的垂直中心轴旋转。 通过将其上支撑有稀土金属基永磁体的转台浸入含水处理液罐中,然后用液体涂覆稀土金属基永磁体,然后将其从液体中取出,旋转 转盘用于离心分离掉附着在稀土金属基永磁体上的水处理液。 \n\n [0042] 作为在薄型工件的表面上以例如约10μm的膜厚形成薄涂膜的方法,有时采用浸涂法,该方法包括在工件上浸渍浸涂。 将工件浸入油漆罐中,然后从液体中取出所得的工件,然后高速旋转,以去除掉多余粘附在工件上的油漆。 作为本领域中已知的用于薄型工件的浸涂法,例如,可以提及在日本专利特开201088/1995中提出的用保护膜涂覆光盘的方法。 该方法包括在水平主轴上以预定间隔垂直放置多个基板; 将除中心部分之外的基板浸入保护膜材料中,同时使它们围绕主轴低速旋转,从而用材料涂覆基板; 从物料中提取出最终产品; 最后,通过高速旋转切断材料。 此外,在日本专利公开No.86271 / 1991中提出了一种浸涂法,其特征在于,该方法包括离心切掉涂料的步骤,该涂料以由涂料支撑的状态施用于待涂物体上。 以使涂布面(平面)大致水平的方式设置在衣架上,其中包括衣架和待涂覆物体在内的整个身体围绕设置在穿过金属线中心的铅垂线的旋转轴旋转。 全身的重力。 此外,在日本特开2000-164556号公报中提出了一种方法,该方法包括使用晶片载体,其中,以在其上设置有凹槽的一侧的方式设置一对支撑构件,从而可以设置在其上具有凹槽的一侧。 面对面 晶片通过其周边部分被晶片载体的面对的凹槽支撑,并且通过以这样的方式旋转载体,使得凹槽可以大致面对加速,从而从支撑在载体上的多个晶片中离心分离出液体。 旋转方向,并干燥。 \n\n [0043] 在对大量的薄型工件采用浸涂法的情况下,优选与工件的形状无关地在所有工件上均一地进行涂覆而不会引起膜的变动。 厚度。 然而,鉴于这种情况,以上专利文献中描述的所有方法均具有缺点。 更具体地,在日本特开201088/1995号公报中记载的方法中,需要将工件保持在中央部。 因此,该方法的缺点在于它仅适用于环形工件。 此外,该方法包括:通过使水平主轴与环形工件的内周面接触而产生的摩擦力使工件自身旋转; 因此,该方法具有如下缺点:如果工件与主轴之间的摩擦力波动,则工件的转速波动,从而担心不能均匀涂覆所有工件。 被实现。 此外,由于难以使工件高速旋转,因此该方法还具有另一个缺点,即在具有高粘度的涂料(例如,粘度超过100℃的涂料)的情况下,过量附着的涂料不能被充分地切掉。  500 cP)施加到工件表面。 另外,在日本特开平86271/1991号公报中记载的方法中,将工件的平面大致水平地保持。 因此,该方法的缺点在于担心会引起附着在上,下平面上的涂料量的差异。 另外,在日本特开2000-164556号公报中记载的方法中,以使一个平面与旋转轴对置的方式支承工件。 因此,每个工件的旋转速度取决于保持位置。 因此,该方法的缺点是不能实现所有工件的均匀涂覆。 \n\n [0044] 然而,本发明提出的浸涂法能够在薄型工件上大量生产均匀的涂膜而不会产生膜厚的波动。 \n\n [0045] 以下,根据需要参照附图,对本发明提出的浸涂法进行说明,但应理解,本发明提出的浸涂法决不限于以下说明。 本发明提出的浸涂法适用于任何形状的工件的涂覆,而与工件的形状无关,但是它特别适用于平面,环形和弧形的薄型工件。 形状。 因此,在下面的说明中,选择将本发明的方法应用于平面工件和环形工件的涂层的情况作为示例。 \n\n [0046]  图。1 图1是示意性工艺流程图,示出了本发明提出的浸涂法的一个实例。 下面对该步骤进行逐步描述:(a)首先,将多个平面工件X支撑在转台2的大致外周边缘部分上,该转台可绕设置在垂直方向上的中心轴1旋转,该中心轴1用作中心。 以使各工件X的最宽面(平坦面)大致呈圆环状且大致平行于转台2的径向的方式设定旋转轴。  (b)然后,通过使用气缸3升起涂料箱4,并将其上支撑有工件X的转台2浸入涂料箱4中,从而将工件X浸入涂料中。 然后,通过使用气缸3降低涂料罐4的工作量,将转盘2抽出。(d)最后,通过旋转转盘,离心分离掉附着在工件X平面上的涂料。 通过使用围绕中心轴1的马达5作为旋转轴来旋转工作台2(优选地,旋转方向至少反转一次)。 根据该方法,即使在使用粘度较高的涂料(例如粘度超过200cP的涂料)的情况下,也可以通过以下方法自由地控制附着在工件X的平面上的涂料量。 调整转台2的尺寸或控制转速。 因此,可以自由地控制涂膜的膜厚。 \n\n [0047] 优选地,将网眼平面用作转台2的平面,使得残留的涂料将不形成涂料容器。 \n\n [0048]  图2(a)  图5是表示将多个平面状工件X大致呈环状地支承在转台2的大致外周缘部上的状态的一例的示意立体图。 每个工件X大致平行于径向设置。  图2(b)  图2示出了其上支撑有工件X的转台2的俯视图。工件X被安装在转台2上设置的两个支撑构件11(优选地,它们是杆状并且具有半圆形截面)上。 如图所示  图。1 因此,可以将工件X直接安装在转台2上,并且通过采用这种安装方法,可以使在工件X的下平面上产生的安装痕迹最小化(参见  图2(c) )。 \n\n [0049] 通过使用相对于支撑构件11在垂直方向上设置的垫片12,以彼此分离的状态支撑平面工件X。垫片12还起到防止工件X滚动的作用。 间隔件12与相邻的间隔件12之间的间隔优选比工件X的厚度宽。 因为如果间隔件12不断地与工件X的两侧接触,则接触迹线变得清晰。 此外,垫片12的横截面优选是圆形的,因为可以使通过旋转工作台2在工件X的平面上产生的接触痕迹最小化。 \n\n [0050] 参照处理步骤(d),在通过旋转台2绕着用作旋转轴的中心轴1旋转而离心地去除附着在平面工件X的平面上的过量涂料的情况下, 在电动机5的情况下,工件X由于离心力而趋向于径向飞出,但是离心飞出限制杆13通过图中省略的结构固定在转台2上并布置。 在水平方向上与工件X的外侧平面接触,并起到防止工件X向径向飞出的作用。 此外,相对于离心飞散调节杆13在旋转轴线方向上设置的间隔件14用于在工件X的离心切掉油漆期间限制工件X的运动。 \n\n [0051]  图3(a) 图7是表示将多个环状工件Y以大致环状的方式支承在转台2的大致外周缘部上的状态的一例的示意立体图。 各个工件Y的平面被设定成与径向大致平行。 通过将工件Y的环部悬挂到固定在转台2上的水平钩部件15上,从而将工件Y支撑在转台2上,该水平钩部件15通过图中省略的构造而形成。 水平钩构件15优选地是具有圆形横截面的杆状钩构件。 此外,优选的是,将水平钩部件15上悬挂有工件Y的部分切割成例如V形(参见  图3(b) )。 通过将这种结构用于水平钩部件15,可以使在工件Y的环部上产生的钩痕最小化。 \n\n [0052] 在对多个薄型工件进行浸涂的情况下,如图所示,可以将每个薄型工件直接支撑在转台上。  无花果 1至3 ; 但是,也可以使用能够使各薄型工件的最宽平面大致平行于转台的径向并大致成环状地配置的各薄型工件的涂布夹具。 在将其安装在转台的大致外周边缘部分的情况下,进行类似布置。 \n\n [0053]  图4  图9是示意性地示出的斜视图,该斜视图表示在将转盘的大致平坦的平面放置在转盘的外周缘部附近的情况下的,能够使各平面的工件彼此分离的涂布夹具的例子。 大致平行于转台的径向并大致呈环形。 涂覆夹具Z至少包括两个带有间隔件22的支撑杆21,两个支撑杆21与水平方向平行地布置,并且用于支撑彼此分开设置的多个平面工件X,并且以这样的方式设置它们的平面 平行于水平方向布置的带有间隔件24的离心飞出调节杆23与工件X的外侧平面相接触,并起到阻止工作的作用 在其上放置有工件X的夹具安装在转台的大致外周边缘部分上并且使转台旋转的情况下,由于离心力,片X从径向飞出。 然而,它还包括在支撑杆21的上侧的两个带有间隔件26的杆状构件25,其与支撑杆21平行地布置,使得多个工件X可以保持平坦。 在大致平行于竖直方向的平面之间保持适当的间隔,并且如果夹具上下颠倒,则在工件X的上部和支撑杆21之间保持该空间。 在夹具上下颠倒的情况下,用于将工件X保持在上级的支撑杆21用作杆状构件25。 \n\n [0054]  图5  图2示出了其上设置有多个薄型工件X的涂覆夹具Z的示意性正视图(a)和沿线D-D(b)的截面图。 \n\n [0055] 支撑杆21和杆状构件25各自优选地具有圆形横截面。 以这种方式,可以最小化在薄型工件X的下平面上产生的安装痕迹。 此外,离心飞散调节杆23优选具有圆形横截面。 以这种方式,可以使在薄型工件X的外侧平面上产生的接触痕迹最小化。 而且,垫片22,垫片24和垫片26各自优选地具有圆形横截面。 以这种方式,可以最小化在薄型工件X的平面上产生的接触痕迹。 此外,支撑杆21以及杆状构件25不必每个由两件组成,并且可以每个仅由一个件组成。 \n\n [0056] 涂层夹具Z如图所示  图4 例如,可以如下使用。  图6  图4是示出状态的一个例子的一部分的平面示意图,其中使用已知的可自由拆卸的方式将其上设置有多个平面工件X的涂覆夹具Z安装在转台2的大致外周边缘部分上 附着手段。 根据图3所示的示意性工艺流程图,通过将其上附着有工件X的涂覆夹具Z浸入其上的转台2,将工件X浸入涂料中,从而将涂料X浸入涂料中。  图。1 ; 即,使用气缸3使涂料罐4上升。然后,使用气缸3使涂料罐4下降,从液体中取出转台2。 最后,通过使用电动机5围绕用作旋转轴的中心轴1旋转转台2来完成浸涂,从而离心分离掉附着在工件平面上的多余涂料。 经过任意时间后,将仍放置有工件X的涂覆夹具Z从转台2上取下,如果需要,还可以将工件X放置在涂覆夹具Z上。 在任意位置进行干燥处理(自然干燥或热干燥)。 然后,将仍放置有工件X的涂覆夹具Z上下颠倒并再次安装在转台2上,从而以与上述类似的过程进行浸涂。 以这种方式,可以使在第二涂层中产生的安装迹线和接触迹线的位置与在第一涂层中产生的那些迹线的位置不同,并且可以将在第一涂层中产生的安装迹线和接触迹线的位置涂覆在第二涂层中 ; 因此,可以在工件X上施加更均匀的涂层。随后,将仍放置有工件X的涂覆夹具Z从转台2上取下,并且如果需要,还可以放置仍然固定的工件X。 在涂布夹具Z上,在任意位置进行干燥处理(自然干燥或热干燥)。 以这种方式,可以在大量工件上有效地形成均匀的涂膜,而不会引起膜厚的波动。 \n\n [0057] 此外,在通过浸涂法将水性处理液涂布在稀土金属类永磁体的表面上的情况下,通过使用粘度为300cP至200℃的水性处理液,可以形成更均匀的涂膜。  600 cP。 优选地,如上所述,具有这样粘度的水性处理液的粘度是通过将纤维素类增稠剂添加到曾经制备的水性处理液中而增加的(优选地,增稠剂以占1的比例添加)。 重量%至2重量%的水性处理液。 \n\n [0058] 在表面上形成有水性处理液的被膜的稀土金属类永磁体的热处理在250℃〜400℃下进行。 通过在这样的温度条件下进行热处理,在成膜过程中,含水处理液中所含的一部分锌细粉会从磁体表面适当地扩散到内部。 可以形成具有高粘合强度的包含分散在其中的锌细颗粒的耐久膜。 如果热处理的温度低于250℃,则不仅锌的扩散不充分,水还残留在稀土金属系永磁体的表面而没有充分蒸发,因此水分充分地蒸发。 担心这种水会导致磁铁腐蚀; 另一方面,如果热处理温度应高于400℃,则担心锌的扩散会过度发生,从而对磁性能产生不利影响。 热处理的时间优选为例如10分钟至120分钟。 在具有水处理的稀土类金属永磁体上在100℃至170℃下进行预干燥后,通过进行热处理,可以形成进一步分散有细锌粒子的均匀的耐腐蚀膜。 涂在其表面的流体涂料。 \n\n [0059] 包含分散在其中的细锌颗粒的耐腐蚀膜优选以其膜厚在1μm至50μm的范围内,并且更优选在5μm至15μm的范围内的方式形成。 如果膜厚度小于1μm,则担心其中分散有细锌颗粒的耐腐蚀膜所需要的性能将不能充分发挥;如果膜厚小于1μm,则不能充分发挥其性能。 另一方面,如果膜厚超过50μm,则担心不能充分获得作为稀土金属类永磁体的有效体积。 \n\n [0060] 此外,其他无机细颗粒可以另外分散在其中分散有锌细颗粒的耐腐蚀膜中。 作为无机细颗粒,可以提及潜在地类似于锌的碱金属的细颗粒,例如铝,锡,锰,镁,钛,镍等。 通过将铝微粒和锌微粒一起分散,例如,可以有效地防止由于锌微粒的腐蚀而引起的白锈(碱性碳酸锌)的产生。 此外,为了在进一步提高膜的耐蚀性的同时进一步减少在膜中产生的针孔,可以分散有Al 2 O 3,TiO 2,SiO 2,云母, 像薄膜中的细锌颗粒一样。 在将无机细颗粒与锌细颗粒一起分散的情况下,锌细颗粒和无机细颗粒的总重量优选占所形成的耐蚀膜的95重量%以下。 \n\n [0061] 作为稀土金属基永磁体,可以提及例如以Nd-Fe-B基永磁体为代表的已知的R-Fe-B基永磁体和以Nd-Fe-B基永磁体为代表的R-Fe-N基永磁体。 从Sm-Fe-N基永磁体等中,从具有高磁性能和优异的批量生产性以及经济优势的角度出发,特别优选R-Fe-B基永磁体。 稀土金属基永磁体可以是烧结磁体或粘结磁体。 \n\n [0062] 稀土金属类永磁体的稀土元素(R)优选为选自Nd,Pr,Dy,Ho,Tb和Sm中的至少一种;优选为Nd。 或选自La,Ce,Gd,Er,Eu,Tm,Yb,Lu和Y中的至少一种。 \n\n [0063] 通常,上述稀土金属中的一种足以用作R,但实际上,从容易获得等方面考虑,可以使用两种以上的混合物(稀金属,did和 喜欢)。 \n\n [0064] 此外,通过添加选自Al,Ti,V,Cr,Mn,Bi,Nb,Ta,Mo,W,Sb,Ge,Sn,Zr,Ni,Si,Zn,Hf和Ga中的至少一种,为 可能会提高矫顽力,消磁曲线的矩形性和生产率,或者降低成本。 另外,通过用Co代替一部分Fe,可以在不损害磁特性的情况下提高所得磁体的温度特性。 \n\n  例子 \n\n [0065] 下面通过实施例和比较例更详细地解释本发明,但是应当理解,本发明不限于此。 \n\n 范例1: \n\n [0066] 作为起始原料,将电解铁,硼铁和钕作为R进行混合,得到预定的磁体组成,熔融铸造后,将所得产物粗粉碎,并通过机械粉碎方法进行细粉碎,得到细粉。 具有在3μm至10μm范围内的粒度。 将得到的细粉在10kOe的磁场下成形,在氩气气氛下于1100℃烧结1小时,并将所得的烧结物在600℃下进行时效处理2小时,从而得到具有 组成的15Nd-7B-78Fe,切出36mm×32mm×3mm尺寸的平面烧结磁体试验片,进行以下实验。 \n\n A.通过添加硅酸乙酯40(含有40重量%硅酸乙酯的无色透明液体,制备了以20重量%硅酸乙酯(其中硅酸乙酯的含量转换为SiO 2含量)作为起始原料的水溶液。  :在水中将硅酸乙酯含量转化为SiO 2含量),并通过用1N盐酸将其pH值调节至3使所得产物进行水解聚合反应。 将由此制备的水溶液与包含分散在其中的锌细颗粒的水性介质混合,该水介质通过添加有机分散剂(商标:Solsperse S20000:由Avecia Limited生产)和平均长径为20的片状锌细颗粒制备。 水中的微米(约20微米×20微米×1微米); 充分搅拌所得产物后,用1N氢氧化钠将其pH值调节至7。 由此获得粘度为15cP并且包含硅酸乙酯作为起始原料和总含量为70重量%的细锌颗粒的水性处理液。  %(其中硅酸乙酯含量转换为SiO 2含量),其中硅酸乙酯作为起始原料,细锌颗粒和有机分散剂以9.9∶90∶0.1的混合比(以重量比计;以重量计;以重量计;以重量计;以重量计;以重量计;以重量计;以重量计;以重量计。 其中硅酸乙酯含量被转换成SiO 2含量。  B.将试验片在乙醇中进行超声波清洗(脱脂处理),自然干燥15分钟后,将其浸入上述水性处理液中。 从水性处理液中取出的试验片设置在离心干燥机内,以300rpm旋转30秒,将附着在试验片表面上的水性处理液切掉,并进行预干燥。 在100°C的温度下放置5分钟。 以这种方式,将经过水性处理液涂层预干燥至其表面的测试片再次浸入水性处理液中。 以与上述相同的方式除去过量粘附到从水处理液中取出的试验片表面上的水处理液,并在空气中在320℃下对具有如下性质的试验片进行热处理10分钟。 在其表面上形成水性处理液的涂膜,从而形成耐蚀膜,该耐蚀膜包含分散在试验片表面上的锌细粒含量为90重量%的锌细粒。 发现由此形成的包含分散在其中的锌细颗粒的耐腐蚀膜的膜厚度为约10μm(从截面观察)。  C.对这样制成的十个试样进行了耐腐蚀性试验,该试验包括在35℃下将5%的盐水喷洒500小时,在其表面上具有分散在其中的细锌颗粒的耐腐蚀膜,并且外观没有变化( 测试后在任何测试件上都不会生锈)。 \n\n 范例2: \n\n [0067] 以与实施例1相同的方式制备pH值为3且含有20重量%的硅酸乙酯(其中硅酸乙酯的含量被转换为SiO 2含量)作为起始原料的水溶液。 将由此制备的与包含细锌颗粒和分散于其中的细铝颗粒的水性介质混合,该水性介质通过添加有机分散剂(商标:Solsperse S20000:由Avecia Limited生产)而制备,其片状细锌颗粒的平均主直径为 20 µm(尺寸约为20 µm×20 µm×1 µm),在水中的平均粒径为3 µm的细铝颗粒,在充分搅拌所得产物后,使用1N将其pH值调节至7 氢氧化钠。 由此获得粘度为13cP并且包含硅酸乙酯作为起始原料,细锌颗粒和细铝颗粒的水处理液,其总含量为70重量%。  %(其中硅酸乙酯含量转换为SiO 2含量),其中以硅酸乙酯为起始原料,细锌颗粒,细铝颗粒和有机分散剂以9.9:60:30:0.1的混合比含有 (重量比;其中硅酸乙酯含量转化为SiO 2含量)。 所得到的含水处理液用于形成耐腐蚀膜,该耐蚀膜包含锌细颗粒和铝细颗粒分散在其中,其中锌细颗粒含量为60重量%,铝细颗粒含量为30重量%。 用与实施例1相同的方法,用与实施例1相同的试验片。由此形成的包含细锌颗粒和细铝颗粒分散在其中的耐腐蚀膜的膜厚为约10μm(从观察到的)。 横截面)。 以与实施例1相同的方式对如此制备的十个试样进行耐腐蚀性试验,其表面上具有分散有细锌颗粒和细铝颗粒的耐腐蚀膜,并且外观没有变化(没有生锈)。 测试后的任何测试件上生成)。 \n\n 范例3: \n\n [0068] 以与实施例1相同的方式制备pH值为3且含有20重量%的硅酸乙酯(其中硅酸乙酯的含量被转换为SiO 2含量)作为起始原料的水溶液。 将由此制备的与包含细锌颗粒,细铝颗粒和细锡颗粒分散在其中的水性介质混合,该水性介质通过添加有机分散剂(商标:Solsperse S20000:由Avecia Limited生产)而制备,该片状细锌颗粒具有 平均大直径为20 µm(约20 µm×20 µm×1 µm),在水中的平均直径为3 µm的细颗粒铝颗粒,以及在水中的平均直径为3 µm的锡颗粒。 充分搅拌所得产物,通过使用1N氢氧化钠将其pH值调节至7。 由此获得粘度为18cP并且包含硅酸乙酯作为起始原料,细锌颗粒,细铝颗粒和细锡颗粒的含水处理液,其总含量为70wt。%(其中硅酸乙酯为 (以SiO 2含量换算),其中以硅酸乙酯为起始原料,以9.9:55:25:10:9的比例含有锌细颗粒,铝细颗粒,锡细颗粒和有机分散剂。  0.1(重量比;其中硅酸乙酯的含量转换为SiO 2含量)。 所得的水性处理液用于形成包含锌细颗粒,铝细颗粒和锡细颗粒分散在其中的锌细颗粒含量为55重量%,铝细颗粒含量为25重量%的耐腐蚀膜。 以与实施例1相同的方式,在与实施例1相同的试验片的表面上得到10重量%的锡微粒。如此形成的包含锌微粒,铝微粒的耐蚀膜的膜厚。 颗粒和分散在其中的细锡颗粒为约10μm(从截面观察)。 以与实施例1相同的方式进行耐蚀性试验,以由此制备的十个试件,其表面上具有分散在其中的细锌颗粒,细铝颗粒和细锡颗粒的耐腐蚀膜,没有发现变化。 测试后任何测试件的外观(无生锈)。 \n\n 比较例1: \n\n [0069] A.制备pH值为12且SiO 2 / Na 2 O比为4.0的碱性硅酸钠水溶液。 将由此制备的水溶液与包含分散在其中的锌细颗粒的水性介质混合,该水介质通过添加有机分散剂(商标:Solsperse S20000:由Avecia Limited生产)和平均长径为20的薄片状锌细颗粒而制备。 在水中加入20 µm(尺寸约为20 µm×20 µm×1 µm),并将所得产物充分搅拌。 由此获得包含碱性硅酸钠作为起始原料和细锌颗粒的处理溶液,其总含量为70重量%(其中碱性硅酸钠的含量转化为SiO 2含量),其中以碱性硅酸钠作为起始原料。 以9.9∶90∶0.1的混合比(重量比;其中碱性硅酸钠含量转化为SiO 2含量)包含原料,细锌颗粒和有机分散剂。  B.将与实施例1相同的试验片在乙醇中进行超声波洗涤(脱脂处理)并自然干燥15分钟,将其浸入上述处理液中。 从处理液中取出的试验片放入离心干燥机内,以300rpm旋转30秒,将附着在试验片表面上的过量的处理液切掉,在空气中进行预干燥。  100°C持续5分钟。 以这种方式,将经过处理溶液涂层的预干燥的测试片在其表面上再次浸入处理溶液中。 以与上述相同的方式除去过量粘附到从处理溶液中取出的试样表面上的处理溶液,并且在空气中在150℃下对具有涂层的试样进行30分钟的热处理。 在其表面上形成处理液膜,从而形成耐腐蚀膜,该膜包含分散在试验片表面上的锌细颗粒含量为90重量%的锌细颗粒。 发现由此形成的包含分散在其中的锌细颗粒的耐腐蚀膜的膜厚度为约10μm(从截面观察)。  C.对这样制成的十个试样进行了包括在35℃下喷洒5%盐水在500℃下的500小时的耐腐蚀性试验,在其表面上具有分散有细锌颗粒的耐腐蚀膜,发现有七个试样 200小时后外观发生变化(产生锈蚀)。 \n\n 范例4: \n\n [0070] 通过快速凝固工艺制备由平均长径为150μm且组成为12原子%的Nd,77原子%的Fe,6原子%的B和5原子%的Co的颗粒组成的合金粉末,并进行捏合。 加入浓度为2 wt。%的环氧树脂。 将所得混合物在686 N / mm 2的压力下压模。  图7  被赋予二次电子像。 在  图8  给出锌的X射线图像。 在  图9  给出铁的X射线图像。 从  无花果 7至9 ,发现锌已经从试件主体的表面扩散到内部。 没有观察到由于锌扩散引起的测试件本身的磁性能下降。 对如此制得的十个试件进行了耐腐蚀性试验,该试验包括在35℃下将5%盐水喷洒500小时,在其表面上具有分散有细锌颗粒的耐腐蚀膜,并且外观没有变化(没有生锈)。 测试后的任何测试件上生成)。 范例5: \n\n [0071] 通过以占水性处理液的1重量%的方式添加羟乙基纤维素作为增稠剂,将实施例1中制备的水性处理液的粘度调节至450cP。 将大量与实施例1相同的试验片在乙醇中进行超声波洗涤(脱脂处理)并自然干燥15分钟,将其放置在图1所示的涂布夹具上。  图4 如图1所示,将安装有试验片的涂布夹具安装在转台的大致外周缘部上。  图6  如图所示进行浸涂  图。1  通过使用上述处理溶液(离心切割,以300rpm进行30秒)。 此后,从转台上取出仍放置有测试件的涂覆夹具,并将仍放置在涂覆夹具上的测试件在空气中于130℃下预干燥10分钟。 随后,对在其表面上形成有水性处理液的涂膜的试验片在350℃的空气中进行30分钟的热处理。 然后,将其上仍放置有测试件的涂覆夹具颠倒过来,并再次附着在转盘上,从而以类似于以下的步骤进行浸涂,预干燥和热处理。 通过上述步骤形成耐腐蚀膜,该耐腐蚀膜含有分散在其中的锌细粒含量为90wt。%的锌细粒。 在试件表面的%。 发现由此形成的包含分散在其中的锌细颗粒的耐腐蚀膜的膜厚度为约10μm(从截面观察)。 以与实施例1相同的方式对如此制备的十个测试片进行耐腐蚀性测试,所述测试片的表面上具有分散在其中的细锌颗粒的耐腐蚀膜,并且在任何情况下都没有外观变化(没有生锈)。 测试后的测试件数。 \n\n 范例6: \n\n [0072] 通过添加羟乙基纤维素作为增稠剂,将实施例2中制备的水性处理液的粘度调节至440cP,使得其占水性处理液的1重量%。 通过使用如此获得的这种处理溶液,以类似的方式形成了包含细锌颗粒和细铝颗粒的耐腐蚀膜,细锌颗粒含量为60wt。%,铝细颗粒含量为30wt。%。 在与实施例1相同的试验片的表面上,按照与实施例5相同的方式在乙醇中进行超声洗涤(脱脂处理)并自然干燥15分钟。 发现由此形成的包含细锌颗粒和细铝颗粒分散在其中的耐腐蚀膜的膜厚度为约10μm(从横截面观察)。 以与实施例1相同的方式对如此制备的十个测试片进行耐腐蚀性测试,其表面上具有分散在其中的细锌颗粒和细铝颗粒的耐腐蚀膜,并且外观没有变化(没有生锈)。 测试后的任何测试件上生成)。 \n\n 范例7: \n\n [0073] 通过以占水性处理液的1重量%的方式添加羟乙基纤维素作为增稠剂,将实施例3中制备的水性处理液的粘度调节至460cP。 通过使用这样获得的处理溶液,以锌细颗粒含量为55wt。%,铝细颗粒含量为25wt。%包含细锌颗粒,细铝颗粒和细锡颗粒分散在其中的耐腐蚀膜。 在与实施例1相同的试验片的表面上,用与实施例5类似的方式在乙醇中进行超声洗涤(脱脂处理)并自然干燥15分钟,形成10wt。%的细锡颗粒含量。  。 发现由此形成的包含细锌颗粒,细铝颗粒和细锡颗粒分散在其中的耐腐蚀膜的膜厚度为约10μm(从横截面观察)。 以与实施例1相同的方式进行耐蚀性试验,以由此制备的十个试件,其表面上具有分散在其中的细锌颗粒,细铝颗粒和细锡颗粒的耐腐蚀膜,没有发现变化。 测试后任何测试件的外观(无生锈)。 \n\n 范例8: \n\n [0074] 以与实施例1相同的方式,制备pH值为3且含有20重量%的硅酸乙酯(其中碱式硅酸钠含量转化为SiO 2含量)作为起始原料的水溶液。 将由此制备的与薄片状的水性介质混合,所述水性介质包含细的锌颗粒,细的铝颗粒,细的锡颗粒和细的氧化铝颗粒,该水性介质通过添加有机薄片状的片状有机分散剂(商标:Solsperse S20000:由Avecia Limited生产)而制备。 平均大直径为20 µm(尺寸约为20 µm×20 µm×1 µm)的细锌颗粒,平均直径为3 µm的细颗粒铝颗粒,平均直径为3 µm的细锡颗粒和 在水中平均直径为1 µm的细氧化铝颗粒; 充分搅拌所得产物后,用1N氢氧化钠将其pH值调节至7。 由此获得粘度为16cP并且包含硅酸乙酯作为起始原料,细锌颗粒,细铝颗粒,细锡颗粒和细氧化铝颗粒的水性处理液,其总含量为70重量%。  %(其中碱性硅酸钠含量转化为SiO 2含量),其中硅酸乙酯作为起始原料,在20℃下含有锌细颗粒,铝细颗粒,锡细颗粒,氧化铝细颗粒和有机分散剂。 混合比为9.9:55:25:8:2:0.1(重量比;其中碱性硅酸钠含量转换为SiO 2含量)。 通过加入羟乙基纤维素作为增稠剂,将由此制备的水性处理液的粘度调节至465cP,使得其占水性处理液的1重量%。 通过使用这样获得的这种处理溶液,一种耐腐蚀膜包含锌细粉,铝细粉,锡细粉和氧化铝细粉,其中锌细粉含量为55重量%,铝细粉含量为55重量%。  25重量%,细锡颗粒含量为8重量%。 在与实施例1相同的试验片的表面上,用与实施例5相似的方法,在乙醇中进行超声洗涤(脱脂处理)并自然干燥15分钟,形成与实施例1相同的试样,并形成2重量%的氧化铝细颗粒。 分钟。 发现由此形成的包含细锌颗粒,细铝颗粒,细锡颗粒和细氧化铝颗粒的耐腐蚀膜的膜厚度为约10μm(从横截面观察)。 以与实施例1相同的方式对如此制成的十个试样进行耐腐蚀性试验,其表面上具有分散在其中的锌细颗粒,铝细颗粒,锡细颗粒和氧化铝细颗粒的耐腐蚀膜, 试验后,在任何试件上都没有发现外观变化(没有生锈)。 \n\n 比较例2: \n\n [0075] 通过以占处理溶液的1重量%的方式添加羟乙基纤维素作为增稠剂,将比较例1中制备的处理溶液的粘度调节至420cP。 通过使用这样得到的处理液,在与实施例1相同的试验片的表面上,以90重量%的细锌粒子含量分散了分散有细锌粒子的耐蚀膜,进行了超声波清洗(脱脂)。 除了将预干燥条件和热处理条件设定为与比较例1相同的条件以外,与实施例5同样地在乙醇中进行15分钟自然干燥15分钟。由此形成的膜厚 从横截面观察,发现其中分散有细锌颗粒的耐腐蚀膜约为10μm。 以与实施例1相同的方式对如此制备的十个测试片进行耐腐蚀性测试,该测试片的表面上具有分散有细锌颗粒的耐腐蚀膜,并且发现六个测试片的外观变化(生锈)。  )在200小时的时间流逝。 \n\n  工业适用性  \n\n [0076] 本发明具有工业上的适用性,因为它提供了一种稳定而简单的生产稀土金属基永磁体的方法,该永磁体在其表面上具有分散在其中的细锌颗粒的耐腐蚀膜,耐腐蚀稀土。 通过该方法制造的金属基永磁体,适合在具有各种形状的薄型工件上形成涂膜的浸涂法和在工件上形成涂膜的方法。');
INSERT INTO `os_patent_instruction_text` VALUES (13004, 22833, '기 술 분 야\n\n본 발명은, 아연미립자분산 내식성 피막을 표면에 가진 희토류계 영구자석의 안정적이고 또한 간이한 제조방법,이렇게 해서 제조되는 내식성 희토류계 영구자석, 각종 형상의 박형 워크(WORK)에 대한 도포막 형성에 적합한딥 스핀코팅법 및 워크의 도포막 형성방법에 관한 것이다.\n\n배 경 기 술\n\nNd-Fe-B계 영구자석으로 대표되는 R-Fe-B계 영구자석이나 Sm-Fe-N계 영구자석으로 대표되는 R-Fe-N계 영구자석등의 희토류계 영구자석은, 자원적으로 풍부하고 염가인 재료가 사용되며, 또한, 높은 자기특성을 가지고 있기때문에, 특히 R-Fe-B계 영구자석은 오늘날 여러 가지 분야에서 사용되고 있다.\n\n그러나, 희토류계 영구자석은 반응성이 높은 희토류원소:R을 포함하기 때문에, 대기중에서 산화·부식되기쉽고, 어떤 표면처리도 하지 않고 사용한 경우에는, 약간의 산이나 알칼리나 수분 등의 존재에 의해서 표면으로부터 부식이 진행하여 녹이 발생하고, 그에 따라, 자석특성의 열화나 불균일을 초래한다.\n\n더욱이, 녹이 발생한\n\n자석을 자기회로 등의 장치에 조립한 경우, 녹이 비산(飛散)하여 주변부품을 오염시킬 우려가 있다.\n\n희토류계 영구자석에 내식성을 부여하는 방법으로는 수많은 방법이 있지만, 그 하나로서, 규소화합물을 출발원료로 한 내식성 피막을 희토류계 영구자석의 표면에 형성하는 방법이 있다.\n\n근래에, 이러한 내식성 피막의 더\n\n욱 큰 성능향상을 목적으로 하여 여러 가지 연구가 이루어지고 있다.\n\n예를 들면, 일본 특허공개공보 2000-182813호(특허문헌 1)에서는, 아연미립자를 분산시킨 알칼리규산염 수용액으로 이루어지는 처리액을, 희토류계 영구자석의 표면에 도포한 후, 열처리를 함으로써 아연미립자분산 내식성피막으로 하는 방법이 제안되어 있다.\n\n이 방법은, 알칼리규산염을 출발원료로 한 피막의 내식작용과전위(電位)적으로 비(卑)인 아연미립자의 희생방식작용을 이용한 것으로, 희토류계 영구자석으로 높은 내식성을부여할 수 있는 방법으로서 기대된다.\n\n그러나, 이 방법에 있어서는, 아연미립자분산 내식성 피막을 형성하기위한 처리액 중에 아연미립자를 균일하게 분산시켜 두기 위해서는 처리액을 알칼리성으로 해두지 않으면 안되기때문에, 처리액을 희토류계 영구자석의 표면에 도포하였을 때, 자석의 표면에서 자석을 구성하는 금속의 수산화물이 생성하여, 이러한 금속수산화물로 이루어지는 층으로 자석의 표면이 덮여져 버리는 것에 기인하여, 밀착성에 뛰어난 아연미립자분산 내식성 피막이 형성되기 어렵다고 하는 문제나, 알칼리규산염을 출발원료로 한 피막은 유연성에 뒤떨어지기 때문에 크랙이 생기기 쉽다고 하는 문제나, 폐액(廢液) 처리가 번거롭다고 하는 문제등이 있다.\n\n또한, 일본 특허공개공보 2001-143949호(특허문헌 2)에서는, 규소유기화합물과 평균입자지름이 1nm∼100nm의 무기질 미립자를 함유한 처리액을, 희토류계 영구자석의 표면에 도포한 후, 열처리를 함으로써 무기질 미립자분산내식성 피막으로 하는 방법이 제안되어 있다.\n\n이 방법은, 규소유기 화합물을 출발원료로 한 얇고 치밀한 내식성 피막을 희토류계 영구자석의 표면에 형성하기 위한 것이며, 특정한 평균입자지름을 가진 무기질미립자를 피막성분 중에 분산시킴으로써, 피막생성과정에서의 피막내부 응력을 완화하여 크랙 등의 물리적 결함이 발생하는것을 방지하는 것이다.\n\n이 방법도 희토류계 영구자석에 높은 내식성을 부여할 수 있는 방법으로서 기대된다.\n\n그러나, 나노미터 차원의 무기질미립자는 물에 균일하게 분산시키는 것이 곤란한 것 등을 고려하면, 처리액의조제에 있어서는, 저급 알콜 등의 유기용매를 주체로 하여 거기에 약간의 물을 첨가하여, 산성 조건하에서 규소유기화합물을 가수분해 중합반응시켜 졸(sol)액으로 함과 동시에 무기질미립자를 분산시킬 필요가 있고,따라서, 조제된 처리액은 산성이기 때문에, 처리액을 희토류계 영구자석의 표면에 도포하였을 때, 자석의 부식을 초래한다고 하는 문제나, 유기용매가 휘발함으로써 처리액 조성이 변동하기 쉽고, 또한, 환경에 악영향을 준다고 하는 문제나, 폐액 처리가 번거롭다고 하는 문제 등이 있다.\n\n따라서 본 발명은, 아연미립자분산 내식성 피막을 표면에 가진 희토류계 영구자석의 안정적이고 또한 간이한 제조방법, 이렇게 해서 제조되는 내식성 희토류계 영구자석, 각종 형상의 박형 워크에 대한 도포막 형성에 적합한딥 스핀코팅법 및 워크의 도포막 형성방법을 제공하는 것을 목적으로 한다.\n\n발명의 상세한 설명\n\n상기의 문제점에 비추어 이루어진 본 발명의 내식성 희토류계 영구자석의 제조방법은, 청구의 범위 제 1 항에기재된 바와 같이, 알킬실리케이트의 가수분해 중합반응물과 평균입자지름이 1㎛∼50㎛의 아연미립자를 함유한pH가 6∼8이고 점도가 1000cP 이하의 수계 처리액을, 희토류계 영구자석의 표면에 도포한 후, 250℃∼400℃에서열처리를 함으로써 아연미립자분산 내식성 피막으로 하는 것을 특징으로 한다.\n\n또한, 청구의 범위 제 2 항에\n\n기재된 제조방법은, 청구의 범위 제 1 항에 기재된 제조방법에 있어서, 아연미립자가 비늘조각형상인 것을 특징으로 한다.\n\n또한, 청구의 범위 제 3 항에 기재된 제조방법은, 청구의 범위 제 1 항에 기재된 제조방법에 있어서, 수계 처리액중에 있어서의 출발원료로서의 알킬실리케이트와 아연미립자의 합계배합비율이 40중량%∼90중량%(알킬실리케이트는 SiO2 환산)인 것을 특징으로 한다.\n\n또한, 청구의 범위 제 4 항에 기재된 제조방법은, 청구의 범위 제 1항에 기재된 제조방법에 있어서, 수계 처리액중에 있어서의 출발원료로서의 알킬실리케이트와 아연미립자의 혼합비율이 1:1∼1:19(중량비 : 알킬실리케이트는 SiO2 환산)인 것을 특징으로 한다.\n\n또한, 청구의 범위 제 5 항에 기재된 제조방법은, 청구의 범위 제 1항에 기재된 제조방법에 있어서, 수계 처리액중에 유기분산제를 첨가하는 것을 특징으로 한다.\n\n또한, 청구의 범위 제 6 항에 기재된 제조방법은, 청구의 범위 제 1항에 기재된 제조방법에 있어서, 아연미립자분산 내식성 피막의 막두께가 1㎛∼50㎛ 인 것을 특징으로 한다.\n\n또한, 청구의 범위 제 7 항에 기재된 제조방법은, 청구의 범위 제 1항에 기재된 제조방법에 있어서, 아연미립자분산 내식성 피막중에 다른 무기질미립자를 더욱 분산시키는 것을 특징으로 한다.\n\n또한, 청구의 범위 제 8 항에 기재된 제조방법은, 청구의 범위 제 1항에 기재된 제조방법에 있어서, 수계 처리액의 희토류계 영구자석의 표면에의 도포를 딥 스핀코팅법으로 하는 것을 특징으로 한다.\n\n또한, 청구의 범위 제 9 항에 기재된 제조방법은, 청구의 범위 제 8항에 기재된 제조방법에 있어서, 점도가300cP∼600cP의 수계 처리액을 사용하여 행하는 것을 특징으로 한다.\n\n또한, 청구의 범위 제 10 항에 기재된 제조방법은, 청구의 범위 제 8 항에 기재된 제조방법에 있어서, 연직방향의 중심축을 회전축으로 하여 회전가능한 회전테이블의 대략 바깥둘레끝단부상에, 복수개의 희토류계 영구자석을 유지하고, 희토류계 영구자석이 유지된 회전테이블을 수계 처리액 탱크에 침지함으로써 희토류계 영구자석에수계 처리액을 침지·코팅(塗裝)한 후, 액속에서 꺼내어, 회전테이블을 회전시켜 희토류계 영구자석에 여분으로부착한 수계 처리액을 원심력으로 털어냄으로써 딥 스핀코팅법을 행하는 것을 특징으로 한다.\n\n또한, 청구의 범위 제 11 항에 기재된 제조방법은, 청구의 범위 제 10 항에 기재된 제조방법에 있어서, 복수개의 희토류계 영구자석을 회전테이블의 대략 바깥둘레끝단부상에 대략 고리형상으로 유지하는 것을 특징으로 한다.\n\n또한, 청구의 범위 제 12 항에 기재된 제조방법은, 청구의 범위 제 10 항에 기재된 제조방법에 있어서, 희토류계 영구자석이 박형 자석(thin type magnet)인 것을 특징으로 한다.\n\n또한, 청구의 범위 제 13 항에 기재된 제조방법은, 청구의 범위 제 12 항에 기재된 제조방법에 있어서, 박형 자석을 그 가장 넓은 면이 회전테이블의 방사상 방향에 대하여 대략 평행해지도록 유지하는 것을 특징으로 한다.\n\n또한, 청구의 범위 제 14 항에 기재된 제조방법은, 청구의 범위 제 13 항에 기재된 제조방법에 있어서, 회전테이블의 대략 바깥둘레끝단부상에 장착하였을 때, 복수개의 박형 자석을 개개의 자석이 서로 떨어진 상태로 그가장 넓은 면이 회전테이블의 방사상 방향에 대하여 대략 평행해지도록 대략 고리형상으로 세트할 수 있는 코팅치구(coating jig)를 사용하여 행하는 것을 특징으로 한다.\n\n또한, 청구의 범위 제 15 항에 기재된 제조방법은, 청구의 범위 제 12 항에 기재된 제조방법에 있어서, 박형 자석이 평판 형상, 링 형상, 활 형상 중의 어느 하나의 형상인 것을 특징으로 한다.\n\n또한, 청구의 범위 제 16 항에 기재된 제조방법은, 청구의 범위 제 14 항에 기재된 제조방법에 있어서, 딥 스핀코팅법을 한 후, 박형 자석이 세트된 채로 코팅치구를 회전테이블로부터 떼어내어, 임의의 장소에서 코팅치구에세트된 채로의 박형 자석을 열처리하는 것을 특징으로 한다.\n\n또한, 본 발명의 희토류계 영구자석은, 청구의 범위 제 17 항에 기재된 바와 같이, 알킬실리케이트를 출발원료로 한 피막성분 중에 평균입자지름이 1㎛∼50㎛의 아연미립자를 분산시킨 내식성 피막을 표면에 가진 것을 특징으로 한다.\n\n또한, 청구의 범위 제 18 항에 기재된 희토류계 영구자석은, 청구의 범위 제 17항에 기재된 희토류계 영구자석에 있어서, 내식성 피막의 아연미립자함유량이 50중량%∼95중량%인 것을 특징으로 한다.\n\n또한, 청구의 범위 제 19 항에 기재된 희토류계 영구자석은, 청구의 범위 제 17 항에 기재된 희토류계 영구자석에 있어서, 자석본체 표면으로부터 내부에 아연이 확산하고 있는 것을 특징으로 한다.\n\n또한, 청구의 범위 제 20 항에 기재된 희토류계 영구자석은, 청구의 범위 제 17 항에 기재된 희토류계 영구자석에 있어서, 청구항 1에 기재된 제조방법에 의해 제조된 것을 특징으로 한다.\n\n또한, 본 발명의 워크(work)의 딥 스핀코팅법은, 청구의 범위 제 21 항에 기재된 바와 같이, 연직방향의 중심축을 회전축으로 하여 회전가능한 회전테이블의 대략 바깥둘레끝단부상에, 복수개의 워크를 유지하여, 워크가 유지된 회전테이블을 도료탱크에 침지함으로써 워크에 도료를 침지·코팅한 후, 액속에서 꺼내어, 회전테이블을회전시켜 워크에 여분으로 부착한 도료를 원심력에 의해 털어내는 것을 특징으로 한다.\n\n또한, 본 발명의 워크의 도포막 형성방법은, 청구의 범위 제 22 항에 기재된 바와 같이, 연직방향의 중심축을회전축으로 하여 회전가능한 회전테이블의 대략 바깥둘레끝단부상에 장착하였을 때, 복수개의 워크를 개개의 워크가 서로 떨어진 상태로 대략 고리형상으로 세트할 수 있는 코팅치구를 사용하여, 워크가 세트된 코팅치구를장착한 회전테이블을 도료탱크에 침지함으로써 워크에 도료를 침지·코팅한 후, 액속에서 꺼내어, 회전테이블을회전시켜 워크에 여분으로 부착한 도료를 원심력에 의해 털어내고, 워크가 세트된 채로의 코팅치구를 회전테이블로부터 떼어내고, 임의의 장소에서 코팅치구에 세트된 채로의 워크를 원하는 바에 따라 건조처리하여 행하는것을 특징으로 한다.\n\n본 발명에 의하면, 아연미립자분산 내식성 피막을 표면에 가진 희토류계 영구자석의 안정적이고 또한 간이한 제조방법, 이렇게 해서 제조되는 내식성 희토류계 영구자석, 각종형상의 박형 워크에 대한 도포막 형성에 적합한딥 스핀코팅법 및 워크의 도포막 형성방법이 제공된다.\n\n실 시 예\n\n본 발명에 있어서, 아연미립자분산 내식성 피막은, 알킬실리케이트의 가수분해 중합반응물과 평균입자지름이 1㎛∼50㎛의\n\n아연미립자를\n\n함유한 pH가 6∼8이고 점도가 1000cP이하의 수계 처리액(aqueous\n\ntreating\n\nfluid)을, 희토류계 영구자석(rare earth metal-based permanent magnet)의 표면에 도포한 후, 250℃∼400℃로열처리를 하는 것으로 형성된다.\n\n이렇게 하여 형성된 아연미립자분산 내식성 피막은, 희토류계 영구자석에 높은 내식성을 부여하는 것인 동시에, 자석본체 표면으로부터 내부로 아연이 확산하고 있는 것으로 밀착성에 뛰어나다.\n\n여기서, 알킬실리케이트로서는, 일반식:SinO(n-1)(OR)(2n+2)로 표시되는 것이 사용된다.\n\n식 중, R은 알킬기이고,\n\n메틸기, 에틸기, 프로필기, 부틸기 등의 탄소수 1∼4의 저급 알킬기가 예시되지만, 그 중에서도, 염가인 것에더하여 독성이 없고 취급성에 뛰어난 에틸기(에틸실리케이트)가 바람직하다.\n\n또한, n은 1이상의 정수이지만,\n\n치밀한 피막을 형성하기 위해서는 n은 1O이하의 정수인 것이 바람직하다.\n\n또한, 아연미립자는, 평균입자지름이 1㎛∼50㎛의 것이 사용된다.\n\n이것은, 평균입자지름이 1㎛보다도 작으면,수계 처리액속에서 아연미립자가 2차 응집을 일으킬 우려가 있는 한편, 평균입자지름이 50㎛보다도 크면, 수계처리액속에서 아연미립자가 침강할 우려가 있고, 어느 경우에 있어서나 보존안정성에 뛰어난 아연미립자가 균일하게 분산한 수계 처리액을 조제하는 것이 곤란하게 될 우려가 있기 때문이다.\n\n은, 2㎛∼30㎛이 바람직하고, 5㎛∼20㎛이 보다 바람직하다.\n\n또, 아연미립자의 평균입자지름\n\n아연미립자는 어떠한 형상이라도 좋지만, 아연미립자분산 내식성 피막에 핀 홀을 될 수 있는 한 발생시키지 않도록 하기 위해서는, 아연미립자는 피막성분 중에고밀도로 적층·충전되는 것이 유리하고, 또한, 자석본체 표면으로부터 내부로 아연을 확산시키기 위해서는 자석본체에 대한 아연미립자의 접촉면적은 넓은 것이 유리하다.\n\n조각 형상인 것이 바람직하다.\n\n따라서, 이러한 관점에서는, 아연미립자는 비늘아연미립자가 비늘조각 형상인 경우, 아연미립자의 평균입자지름이란 평균긴지름을 의미하는 것으로 한다.\n\n수계 처리액 중에 있어서의 출발원료로서의 알킬실리케이트와 아연미립자의 합계배합비율은, 40중량%∼90중량%(알킬실리케이트는 SiO2 환산)으로 하는 것이 바람직하고, 60중량%∼80중량%으로 하는 것이 보다 바람직하다.\n\n합계배합비율이 40중량% 미만이면, 충분한 특성을 발휘하는 막두께를 가진 아연미립자분산 내식성 피막을 얻기위해서는 제조공정회수를 필요이상으로 증가시켜야만 하는 우려가 있는 한편, 90중량%을 넘으면, 수계 처리액의보존안정성에 영향을 미치게 할 우려가 있기 때문이다.\n\n수계 처리액 중에 있어서의 출발원료로서의 알킬실리케이트와 아연미립자의 혼합비율은, 형성되는 아연미립자분산 내식성 피막의 아연미립자 함유량이 50중량%∼95중량%이 되도록, 1:1∼1:19(중량비: 알킬실리케이트는 SiO2환산)로 하는 것이 바람직하고, 1:3∼1:10으로 하는 것이 보다 바람직하다.\n\n형성되는 아연미립자분산 내식성\n\n피막의 아연미립자 함유량이 50중량%보다 적으면, 피막성분 중에 아연미립자를 분산시키는 것의 효과가 충분히발휘되지 않을 우려가 있는 한편, 95중량%보다 많으면, 알킬실리케이트를 출발원료로 하는 내식성 피막으로서의본래적인 특성이 충분히 발휘되지 않을 우려가 있기 때문이다.\n\n희토류계 영구자석의 표면에 도포하는 수계 처리액의 pH를 6∼8로 규정하는 것은, pH가 6보다 작으면, 상기 특허문헌 2에 기재한 바와 같이 희토류계 영구자석의 부식을 초래할 우려가 있는 한편, pH가 8보다 크면, 상기 특허문헌 1에 기재한 바와 같이 밀착성에 뛰어난 아연미립자분산 내식성 피막이 형성되지 않을 우려가 있기 때문이다.\n\n희토류계 영구자석의 표면에 도포하는 수계 처리액의 점도를 1000cP 이하로 규정하는 것은, 수계 처리액의 점도가 1000cP를 넘으면, 막두께가 균일한 아연미립자분산 내식성 피막을 형성하는 것이 곤란하게 될 우려가 있기때문이다.\n\n균질성이 뛰어난 수계 처리액의 조제는, 예를 들면, 산성 조건(pH3∼4 정도)하에서 또는 염기성 조건(pH10∼12정도)하에서 알킬실리케이트를 가수분해중합반응(hydrolysis polymerization reaction)시킨 수용액에 평균입자지름이 1㎛∼50㎛의 아연미립자를 첨가한 후, pH를 6∼8로 조정함과 동시에 점도를 100cP 이하로 유지 또는 조정함으로써 행하는 것이 바람직하다(점도는 50cP 이하가 보다 바람직하고 25cP 이하가 더욱 바람직하다).\n\n또한, 산성조건하에서 알킬실리케이트를 가수분해 중합반응시킨 경우, pH의 조정은, 예를 들면, 수산화나트륨등을 사용하면 좋다.\n\n또한, 염기성 조건하에서 알킬실리케이트를 가수분해 중합반응시킨 경우, pH의 조정은,예컨대, 염산 등을 사용하여 행하면 좋다.\n\n수계 처리액의 조제의 단계에서 알킬실리케이트를 가수분해 중합반응시켜 두는 것은, 형성되는 피막을 치밀한것으로 하기 때문이다.\n\n알킬실리케이트의 가수분해 중합반응은, 사용하는 알킬실리케이트의 전부를 가수분해중합반응시킬 필요는 반드시 없고, 그 일부를 가수분해 중합반응시키는 것과 같은 형태라도 좋다.\n\n가수분해 중\n\n합반응의 정도는, 산이나 염기의 첨가량이나 가수분해중합반응을 일으키는 것에 있어서 사용하는 매체로서의 물의 양으로 조정할 수 있다.\n\n넘는 경우가 있다.\n\n알킬실리케이트의 가수분해 중합반응의 정도가 높으면, 수용액의 점도가 100cP를일단 점도가 100cP를 넘는 경우이더라도 가온수(adding warm water)를 첨가 등을 하면 점도의 저하를 도모하는 것도 가능하지만, 수계 처리액의 보다 뛰어난 균질성을 확보하기 위해서는, 가수분해 중합반응시에 수용액의 점도가 100cP를 넘는 것과 같은 경우에는, 적절히 물을 첨가 등을 하여 그 점도가 100cP를넘지 않도록 하는 것이 바람직하다.\n\n또, 원하는 막두께의 피막이 형성되기 쉽게 하는 것을 목적으로 하여 수계처리액의 표면장력을 적절한 것으로 하고 싶은 경우 등에는, 예를 들면 수계 처리액 중에 셀룰로오즈계의 증점제(cellulose-based thickener)(히드록시에틸셀룰로오즈, 에틸셀룰로오즈, 메틸셀룰로오즈, 메틸히드록시프로필셀룰로오즈, 에틸히드록시에틸셀룰로오즈, 메틸에틸셀룰로오즈 등이 예시되는 수용성 셀룰로오즈에테르 등) 등을 첨가함으로써, 그 점도를 조정할 수가 있다.\n\n형성되는 피막의 막두께를 두껍게 하는 것 등을 목적으로 하여수계 처리액의 점도를 100cP 이상으로 하고 싶은 경우에는, 일단 조제한 수계 처리액 중에 증점제를 첨가하여점도를 높이는 것에 의해 행하는 것이 바람직하다.\n\n알킬실리케이트를 가수분해 중합반응시킨 수용액에 아연미립자를 첨가하는 것에 있어서는, 유기분산제를 사용하여, 수계 처리액 속에서 아연미립자가 균일하게 분산하도록 하는 것이 바람직하다.\n\n수계 처리액 중에의 유기분\n\n산제의 첨가는, 예를 들면, 유기 분산제를 첨가한 물에 아연미립자를 투입함으로써 아연미립자가 균일하게 분산한 아연미립자분산 수계 매체를 조제하여, 이 아연미립자분산 수계 매체와 알킬실리케이트를 가수분해 중합반응시킨 수용액을 혼합함으로써 행하면 좋다.\n\n또, 유기 분산매로서는, 애니온성 분산제(anionic dispersingagent)(지방족계 다가카르본산, 폴리에테르폴리에스테르카르본산염, 고분자폴리에스테르산폴리아민염, 고분자량폴리카르본산장쇄아민염 등), 비이온성 분산제(폴리옥시에틸렌알킬에테르나 소르비탄에스테르 등의 카르본산염이나 술폰산염이나 암모늄염 등), 고분자 분산제(수용성 에폭시의 카르본산염이나 술폰산염이나 암모늄염 등,스티렌-아크릴산공중합물, 아교 등) 등이 아연미립자와의 친화성이나 비용면에서 바람직하게 사용된다.\n\n또, 희토류계 영구자석의 표면에 도포하는 수계 처리액의 점도는, 충분한 특성을 발휘하는 막두께를 가진 아연미립자분산 내식성 피막을 필요 이상의 제조공정회수를 반복하지 않고 형성하기 위해서는, 5cP 이상인 것이 바람직하다.\n\n희토류계 영구자석의 표면에 수계 처리액을 도포하는 것에 있어서는, 딥 코팅법, 스프레이법, 스핀코팅법, 딥스핀코팅법 등을 채용할 수가 있다.\n\n또, 희토류계 영구자석의 표면에 형성되는 아연미립자분산 내식성 피막과의 밀착성의 향상을 도모하기 위해서, 수계 처리액을 도포하기 전에 자석에 대하여 샌드블러스트처리(sandblasting treatment)나 산(酸)세정처리(pickling treatment)를 실시하더라도 좋다.\n\n수계 처리액의 희토류계 영구자석의 표면에의 도포는, 보다 균일한 수계처리액의 도포막이 형성되도록 하기 위해서는, 딥 스핀코팅법으로 하는 것이 바람직하다.\n\n특히, 연직방향의 중심축을 회전축으로 하여 회전가능한 회전테이블의 대략 바깥둘레끝단부상에, 복수개의 희토류계 영구자석을 유지하여, 희토류계 영구자석이 유지된 회전테이블을 수계 처리액 탱크에 침지함으로써 희토류계 영구자석에 수계 처리액을 침지·코팅한 후, 액속에서꺼내어, 회전테이블을 회전시켜 희토류계 영구자석에 여분으로 부착한 수계 처리액을 원심력에 의해 털어냄으로써 딥 스핀코팅법을 행하는 것이 바람직하다.\n\n박형 워크의 표면에, 막두께가 예를 들면 10㎛ 정도의 얇은 도포막을 형성하는 방법으로서, 워크를 도료탱크에침지함으로써 워크에 도료를 침지·코팅한 후, 액속에서 꺼내어, 고속회전시켜 여분으로 부착한 도료를 털어내는 것에 의한 딥 스핀코팅법이 채용되는 경우가 있다.\n\n지금까지 알려져 있는 박형 워크의 딥 스핀코팅법으로서는, 예를 들면, 일본 특허공개공보 평7-201088호에 광디스크의 보호막 도포방법으로서 제안되어 있는 것이있다.\n\n이 방법은, 수평 주축에 복수개의 기판을 일정간격으로 수직으로 세트하여, 주축을 중심으로 저속회전시키면서 기판의 중심부 이외를 보호막 재료에 침지함으로써 해당 재료를 도포한 후, 해당 재료로부터 끌어올려,마지막으로 고속회전시켜 해당 재료를 털어내는 것에 의한 것이다.\n\n또한, 일본 특허공개공보 평3-86271호에 있어서는, 행거(hanger)를 사용하여 피도포물의 도포면(평면)을 거의 수평으로 유지한 상태로, 행거와 피도포물을포함하는 전체의 중심을 지나는 연직선을 회전축으로서 회전시켜 도료를 원심력으로 털어내는 공정을 포함하는것을 특징으로 하는 딥 스핀코팅법이 제안되어 있다.\n\n또한, 일본 특허공개공보 2000-164556호에 있어서는, 복수의 홈을 가진 한 쌍의 유지부재를 홈을 가진 쪽을 대향시켜, 이 대향하는 홈으로 웨이퍼의 주변을 유지하도록한 웨이퍼캐리어를 사용하여, 캐리어를 그 홈이 대략 회전가속도방향을 향하도록 회전시켜 캐리어에 유지한 복수개의 웨이퍼상의 액체를 원심력으로 털어내어 건조하는 방법이 제안되어 있다.\n\n대량의 박형 워크에 대하여 딥 스핀코팅법을 채용하는 경우, 워크의 형상에 관계없이, 모든 워크에 대하여 막두께의 불균일을 생기게 하지 않고 균일한 코팅을 할 수 있는 것이 바람직하다.\n\n상기 특허문헌에 기재된 어느 방법이나 많든 적든 결점이 있다.\n\n그러나, 이 점에 비추어 보면,\n\n구체적으로는, 일본 특허공개공보 평7-201088호에 기재된 방법에서는, 워크를 그 중심부에서 유지해야만 하기 때문에, 링 형상 워크에 밖에 적용할 수없다고 하는 결점이 있다.\n\n또한, 이 방법으로는, 링 형상 워크의 안둘레면에 수평 주축을 접촉시켜, 양자사이에 발생하는 마찰력으로 워크 자체를 회전시키기 위해서, 워크와 주축의 사이에 발생하는 마찰력에 불균일이 있으면, 워크의 회전속도가 불균일해지기 때문에, 모든 워크에 대하여 균일한 코팅을 할 수 없는 우려가 있다고하는 결점이나, 워크를 고속회전시키는 것이 곤란하기 때문에, 점성이 높은 도료(예를 들면 점도가 500cP를 넘는 것과 같은 것)를 워크에 코팅하는 경우에는, 여분으로 부착한 도료를 충분히 털어낼 수 없는 우려가 있다고하는 결점이 있다.\n\n또한, 일본 특허공개공보 평3-86271호에 기재된 방법에서는, 워크의 평면을 거의 수평으로유지하기 때문에, 표면과 아래면과의 사이에서 도료의 부착량에 차이가 생길 우려가 있다고 하는 결점이 있다.\n\n또한, 일본 특허공개공보 2000-164556호에 기재된 방법에서는, 워크의 한쪽의 평면이 회전축으로 대향하여 유지되기 때문에, 유지위치에 의해서 워크마다 그 회전속도가 다르기 때문에, 모든 워크에 대하여 균일한 코팅을 할수 없을 우려가 있다고 하는 결점이 있다.\n\n그러나, 본 발명에서 제안하는 딥 스핀코팅법에 의하면, 대량의 박형 워크에 대해서도 막두께의 불균일을 생기게 하지 않고 균일한 도포막 형성을 할 수 있다.\n\n이하, 본 발명에 있어서 제안하는 딥 스핀코팅법을, 필요에 따라 도면을 참조하면서 설명하지만, 본 발명에 있어서 제안하는 딥 스핀코팅법은 이하의 기재에 조금도 한정되어 해석되는 것은 아니다.\n\n본 발명에 있어서 제안\n\n하는 딥 스핀코팅법은, 워크의 형상에 관계없이, 모든 형상의 워크의 코팅에 적용할 수가 있지만, 특히 평판 형상이나 링 형상이나 활 형상 등의 박형 워크의 코팅에 바람직하기 때문에, 이하의 설명에서는, 본 발명 방법을평판 형상 워크와 링 형상 워크의 코팅에 적용하는 경우를 예로 든다.\n\n도 1은, 본 발명에 있어서 제안하는 딥 스핀코팅법의 일례의 개략공정도이다.\n\n그 공정을 순서대로 설명하면,\n\n(a) 먼저, 연직방향의 중심축(1)을 회전축으로 하여 회전가능한 회전테이블(2)의 대략 바깥둘레끝단부상에, 복수개의 평판형상 워크(X)를, 그 개개의 가장 넓은 면(평면)이 방사상 방향으로 대략 평행해지도록 대략 고리형상으로 유지한다.\n\n(b) 다음에, 에어실린더(3)에 의해 도료탱크(4)를 상승시켜 워크(X)가 유지된 회전테이블(2)을 도료탱크(4)에 침지함으로써 워크(X)에 도료를 침지·코팅한다.\n\n(c) 다음에, 에어실린더(3)에 의해 도료탱크(4)를 하강시켜 회전테이블(2)을 액속에서 꺼낸다. (d) 마지막으로, 회전테이블(2)을 모터(5)에 의해 중심축(1)을 회전축으로 하여 회전시켜(적어도 1회는 회전방향을 역전하는 것이 바람직하다), 워크(X)의 평면에 여분으로 부착한 도료를 원심력으로 털어 낸다.\n\n이 방법에 의하면, 점성이 비교적 높은 도료(예를 들면 점도가200cP를 넘는 것과 같은 것)이더라도, 회전테이블(2)의 크기를 조정하거나 회전속도를 제어하거나 함으로써, 워크(X)의 평면에의 도료의 부착량을 자유롭게 조정할 수 있기 때문에, 형성되는 도포막의 막두께도 자유롭게 조정할 수가 있다.\n\n또, 회전테이블(2)의 테이블면은, 도료의 고임이 생기거나 하지 않도록, 메쉬 형상인 것이 바람직하다.\n\n도 2(a)는, 회전테이블(2)의 대략 바깥둘레끝단부상에, 복수개의 평판형상 워크(X)를, 그 개개의 평면이 방사상방향으로 대략 평행해지도록 대략 고리형상으로 유지한 상태의 일례의 개략적인 부분사시도이다.\n\n워크(X)를 유지한 회전테이블(2)을 그 위쪽에서 본 도면이다.\n\n도 2(b)는,\n\n워크(X)는, 회전테이블(2)에 설치된 2개의 유지부재(단면이 반원의 막대형상인 것이 바람직하다)(11)상에 놓여진다.\n\n워크(X)는, 도 1에 나타낸 바와 같이, 회전테이블(2)상에 바로 얹어 두어도 좋지만, 이러한 얹어 놓는 방법을 채용함으로써, 워크(X)의 아래면에 생기는놓인 자국을 극소화할 수 있다(도 2(c) 참조).\n\n개개의 평판형상 워크(X)는, 유지 부재(11)에 대하여 연직방향으로 설치된 스페이서(12)에 의해서 서로 떨어진상태로 유지된다.\n\n또, 스페이서(12)는 워크(X)의 가로회전을 방지하는 기능도 함께 가진다.\n\n서(12)와 스페이서(12)의 간격은, 워크(X)의 두께보다도 넓은 것이 바람직하다.\n\n서(12)가 접촉하고 있으면, 그 접촉자국이 현저해지기 때문이다.\n\n직하다.\n\n인접하는 스페이\n\n항상 워크(X)의 양면에 스페이\n\n또, 스페이서(12)의 단면은 원형인 것이 바람회전테이블(2)을 회전시킴에 따라 워크(X)의 평면에 생기는 접촉자국을 극소화할 수 있기 때문이다.\n\n공정 (d)에 있어서, 회전테이블(2)을 모터(5)에 의해 중심축(1)을 회전축으로 하여 회전시켜 평판형상 워크(X)의 평면에 여분으로 부착한 도료를 원심력에 의해 털어 낼 때, 워크(X)는, 원심력에 의해 방사상 방향으로 튀어나가려고 하지만, 도면의 대략적인 구성에 의해서 회전테이블(2)에 고정되고, 수평방향으로 배치된 원심 튀어나감 규제막대(13)는, 워크(X)의 바깥쪽 측면에 접촉하여 워크(X)가 방사상 방향으로 튀어나가는 것을 규제하는기능을 가진다.\n\n또한, 원심 튀어나감 규제막대(13)에 대하여 회전축 방향에 설치된 스페이서(14)는, 원심력에의해 털어 내는 도중의 워크(X)의 움직임을 규제하는 기능을 가진다.\n\n도 3(a)는, 회전테이블(2)의 대략 바깥둘레끝단부상에, 복수개의 링 형상 워크(Y)를, 그 개개의 평면이 방사상방향으로 대략 평행해지도록 대략 고리형상으로 유지한 상태의 일례의 개략적인 부분사시도이다.\n\n워크(Y)는 도\n\n면의 개략적인 구성에 의해서 회전테이블(2)에 고정된 수평 후크 부재(15)에, 그 링부분에 매달아 걸어 유지된다.\n\n수평 후크 부재(15)는, 단면이 원형인 막대 형상인 것이 바람직하다.\n\n또한, 수평 후크 부재(15)의 워크(Y)가 매달아 걸려지는 부분은, 예를 들면 V자형으로 절결하여 두는 것이 바람직하다(도 3(b)참조).\n\n수평 후크\n\n부재(15)를 이러한 구성으로 함으로써, 워크(Y)의 링 부분에 생기는 매단 자국을 극소화할 수가 있다.\n\n복수개의 박형 워크에 딥 스핀 코팅을 할 때에 있어서는, 도 1∼도 3에 나타낸 바와 같이, 박형 워크의 1개 1개를 직접적으로 회전테이블에 유지시켜도 좋지만, 회전테이블의 대략 바깥둘레끝단부상에 장착하였을 때, 복수개의 박형 워크를 개개의 워크가 서로 떨어진 상태로 그 가장 넓은 면이 회전테이블의 방사상 방향에 대하여 대략평행해지도록 대략 고리형상으로 세트할 수 있는 코팅치구를 사용하여도 좋다.\n\n도 4는, 회전테이블의 대략 바깥둘레끝단부상에 장착하였을 때, 복수개의 평판형상 워크를 개개의 워크가 서로떨어진 상태로 그 평면이 회전테이블의 방사상 방향에 대하여 대략 평행해지도록 대략 고리형상으로 세트할 수있는 코팅치구의 일례의 개략적인 사시도이다.\n\n이 코팅치구(Z)는, 복수개의 평판 형상 워크(X)를 개개의 워크가 서로 떨어진 상태로 그 평면이 연직방향으로 대략 평행해지도록 유지하기 위한, 수평방향으로 평행하게 배치된 2개의 스페이서(22)가 붙은 유지막대(21)와, 워크(X)가 세트된 치구를 회전테이블의 대략 바깥둘레끝단부상에 장착하여 회전테이블을 회전시켰을 때에, 워크(X)의 바깥쪽 측면에 접촉하여 원심력에 의한 방사상 방향으로의 워크(X)의 튀어나감을 규제하기 위한, 수평방향으로 평행하게 배치된, 스페이서(24)가 붙은 원심 튀어나감규제막대(23)를 적어도 갖게 되지만, 유지막대(21)의 위쪽에, 치구를 상하 반전시켰을 때에, 복수개의 워크(X)를 개개의 워크가 서로 떨어진 상태로 그 평면이 연직방향으로 대략 평행해지도록, 또한 워크(X)의 상부가 유지막대(21)와 공간을 가지도록 유지하기 위한, 유지막대(21)에 평행하게 배치된 2개의 스페이서(26)가 붙은 막대형상 부재(25)를 더욱 갖게 된다.\n\n워크(X)를 상단으로써 유지하기 위한 유지막대(21)는, 치구를 상하 반전시켰을 때에, 막대형상 부재(25)로서 기능한다.\n\n도 5는, 복수개의 박형 워크(X)를 세트한 코팅치구(Z)의 개략정면도(a)와 D-D 단면도(b)이다.\n\n유지막대(21)와 막대형상부재(25)는, 단면이 원형인 것이 바람직하다.\n\n자국을 극소화할 수 있기 때문이다.\n\n박형 워크(X)의 아래면에 생기는 놓여진또, 원심 튀어나감 규제막대(23)도, 단면이 원형인 것이 바람직하다.\n\n형 워크(X)의 바깥쪽 측면에 생기는 접촉자국을 극소화할 수 있기 때문이다.\n\n4)와 스페이서(26)도, 단면이 원형인 것이 바람직하다.\n\n수 있기 때문이다.\n\n박\n\n또, 스페이서(22)와 스페이서(2\n\n박형 워크(X)의 평면에 생기는 접촉 자국을 극소화할또, 유지막대(21)와 막대 형상부재(25)는, 반드시 2개 필요한 것은 아니고, 1개이더라도 좋다.\n\n도 4에 나타낸 코팅치구(Z)는, 예를 들면, 다음과 같이 하여 사용된다.\n\n도 6은, 자체공지인 착탈이 자유로운장착수단에 의해, 복수개의 평판형상 워크(X)를 세트한 코팅치구(Z)를, 회전테이블(2)의 대략 바깥둘레끝단부상에 장착한 상태의 일례의 개략적인 부분평면도이다.\n\n도 1에 나타낸 개략적인 공정도에 따라서, 에어실린더(3)에 의해 도료탱크(4)를 상승시켜 워크(X)를 세트한 코팅치구(Z)를 장착한 회전테이블(2)을 도료탱크(4)에 침지함으로써 워크(X)에 도료를 침지·코팅한다.\n\n블(2)을 액속에서 꺼낸다.\n\n다음에, 에어실린더(3)에 의해 도료탱크(4)를 하강시켜 회전테이마지막으로, 회전테이블(2)을 모터(5)에 의해 중심축(1)을 회전축으로 하여 회전시켜 워크(X)의 평면에 여분으로 부착한 도료를 원심력에 의해 털어 내는 것으로 딥 스핀코팅을 완료한다.\n\n임의\n\n시간 경과후, 워크(X)가 세트된 채로의 코팅치구(Z)를 회전테이블(2)로부터 떼어내어, 임의의 장소에서 코팅치구(Z)에 세트된 채로의 워크(X)를 원하는 바에 따라 건조처리(자연건조 또는 가열건조)한다.\n\n그 후, 워크(X)가\n\n세트된 채로의 코팅치구(Z)를 상하 반전시켜 다시 회전테이블(2)에 장착하고, 딥 스핀코팅을 상기와 같은 공정으로 다시 행한다.\n\n이와 같이 하면, 1회째의 코팅과 2회째의 코팅에서는, 워크(X)에 생기는 놓인 자국이나 접촉자국의 위치가 변하기 때문에, 2회째의 코팅에 의해, 1회째의 코팅으로 워크(X)에 생긴 놓인 자국이나 접촉자국에도 코팅이 행하여지기 때문에, 워크(X)에 대하여 보다 균일한 코팅을 할 수 있다.\n\n그 후, 워크(X)가 세트\n\n된 채로의 코팅치구(Z)를 회전테이블(2)로부터 떼어내어, 임의의 장소에서 코팅치구(Z)에 세트된 채로의 워크(X)를 원하는 바에 따라 건조처리(자연건조 또는 가열건조)하면, 대량의 워크에 대해서도 막두께의 불균일을 생기게 하지 않고 균일한 도포막 형성을 효율적으로 할 수 있다.\n\n또, 수계 처리액의 희토류계 영구자석의 표면에의 도포를 딥 스핀코팅법으로 하는 경우, 점도가 300cP∼600cP의수계 처리액을 사용함으로써, 보다 균일한 도포막 형성을 할 수 있다.\n\n이러한 점도의 수계 처리액은, 상술한바와 같이, 일단 조제한 수계 처리액중에 셀룰로오즈계의 증점제 등을 첨가함으로써 점도를 높인 것이 바람직하다(증점제는 수계 처리액중에 1중량%∼2중량% 포함되도록 첨가하는 것이 바람직하다).\n\n표면에 수계 처리액의 도포막이 형성된 희토류계 영구자석의 열처리는, 250℃∼400℃에서 행한다.\n\n이러한 온도\n\n조건으로 열처리를 하면, 수계 처리액 중에 포함되는 아연미립자의 일부가, 피막생성과정에서, 자석본체 표면으로부터 내부로 적절히 확산함으로써, 밀착성이 뛰어난 아연미립자분산 내식성 피막이 형성된다.\n\n열처리의 온도\n\n가 250℃보다도 낮으면, 이러한 아연의 확산이 충분히 일어나지 않을 뿐만 아니라, 물이 충분히 증발하지 않고서 희토류계 영구자석의 표면에 잔존함으로써, 그 후에 있어서 자석의 부식을 초래할 우려가 있는 한편, 400℃보다도 높으면, 아연의 확산이 필요 이상으로 일어나므로, 자석특성에 악영향을 미칠 우려가 있다.\n\n시간은, 예를 들면, 10분∼120분이 바람직하다.\n\n열처리의\n\n또, 수계 처리액을 표면에 도포한 희토류계 영구자석을 일단100℃∼170℃로 가(假)건조하고 나서 열처리를 함으로써, 보다 균질한 아연미립자분산 내식성 피막을 형성할 수가 있다.\n\n아연미립자분산 내식성 피막은, 그 막두께가 1㎛∼50㎛가 되도록 형성하는 것이 바람직하고, 5㎛∼15㎛가 되도록 형성하는 것이 보다 바람직하다.\n\n막두께가 1㎛미만이면, 아연미립자분산 내식성 피막으로서의 특성이 충분히 발휘되지 않을 우려가 있는 한편, 막두께가 50㎛을 넘으면, 희토류계 영구자석의 유효부피를 충분히 확보할수 없게 될 우려가 있기 때문이다.\n\n또, 아연미립자분산 내식성 피막중에 다른 무기질미립자를 더욱 분산시키더라도 좋다.\n\n무기질미립자로서는, 예\n\n를 들면, 알루미늄, 주석, 망간, 마그네슘, 티타늄, 니켈 등의 아연과 같이 전위(電位)적으로 비(卑)인 금속의미립자를 들 수 있다.\n\n예를 들면, 아연미립자와 함께 알루미늄 미립자를 분산시킴으로써, 아연미립자의 부식에의한 하얀 녹(염기성 탄산아연)의 생성을 효과적으로 방지할 수가 있다. 또한, 피막에 발생할 수 있는 핀 홀을보다 줄이고, 피막의 내식성을 보다 높이기 위해서, 피막중에 아연미립자와 함께 Al2O3이나 TiO2나 SiO2 나 운모등의 산화물 미립자를 분산시키더라도 좋다.\n\n아연미립자와 함께 다른 무기질미립자를 분산시키는 경우, 형성되는 내식성 피막의 아연미립자와 다른 무기질미립자의 합계함유량은, 95중량% 이하인 것이 바람직하다.\n\n희토류계 영구자석으로서는, Nd-Fe-B계 영구자석으로 대표되는 R-Fe-B계 영구자석이나 Sm-Fe-N계 영구자석으로대표되는 R-Fe-N계 영구자석 등의 공지의 희토류계 영구자석을 들 수 있다.\n\n그 중에서도, R-Fe-B계\n\n영구자석은, 특히 자기특성이 높고, 대량생산성이나 경제성에 우수한 점에서 바람직한 것이다.\n\n희토류계 영구\n\n자석은, 소결 자석이더라도 좋고 본드 자석이더라도 좋다.\n\n희토류계 영구자석에 있어서의 희토류 원소(R)는, Nd, Pr, Dy, Ho, Tb, Sm 중의 적어도 1종, 혹은 더욱, La,Ce, Gd, Er, Eu, Tm, Yb, Lu, Y 중 적어도 1종을 포함하는 것이 바람직하다.\n\n또한, 통상적으로는 R중의 1종으로 충분하지만, 실용상으로는 2종 이상의 혼합물{미쉬 메탈(mish metal)이나 디짐(didymium) 등}을 입수상의 편의 등의 이유에 의해서 사용할 수도 있다.\n\n또한, Al, Ti, V, Cr, Mn, Bi, Nb, Ta, Mo, W, Sb, Ge, Sn, Zr, Ni, Si, Zn, Hf, Ga 중의 적어도 1종을 첨가함으로써, 보자력(coercive force)이나 감자(demagnetizing curve)곡선의 각형성(rectangularity)의 개선, 제조성의 개선, 저가격화를 도모하는 것이 가능해진다.\n\n또한, Fe의 일부를 Co로 치환함으로써, 얻어지는 자석의 자기특성을 손상하지 않고 온도특성을 개선할 수가 있다.\n\n[실시예]\n\n이하, 본 발명을 실시예와 비교예에 의해 더욱 상세히 설명하지만, 본 발명은 이에 한정하여 해석되는 것이 아니다.\n\n\n\n출발원료로서, 전해철, 페로보론, R로서의 Nd를 소요의 자석조성으로 배합하여, 용해하여 주조한 후, 기계적 분쇄법으로 굵게 분쇄하고 나서 미세분쇄함으로써 입도 3㎛∼10㎛의 미세분말을 얻고, 이것을 10kOe의 자기장 중에서 성형하고 나서 아르곤 분위기중에서 1100℃×1시간의 소결을 행한 후, 얻어진 소결체에 대하여 600℃×2시간의 시효처리를 하여, 15Nd-7B-78Fe의 조성을 가진 자석체로부터 잘라낸 36mm×32mm×3mm 치수의 평판 형상 소결자석 시험편을 사용하여 이하의 실험을 하였다.\n\nA. 에틸실리케이트 40(에틸실리케이트를 SiO2 환산으로 40중량% 함유한 무색 투명액체)에 물을 첨가하여, 1N 염산으로 pH를 3으로 조정함으로써 에틸실리케이트를 가수분해 중합반응시켜, 출발원료로서의 에틸실리케이트를2O중량%(SiO2 환산) 함유하는 수용액을 조제하였다.\n\nS20000:아비시아(Avecia)사제조}와\n\n평균\n\n이 수용액과, 유기분산제 {상품명 솔스퍼스긴지름이\n\n20㎛의\n\n비늘조각형상\n\n(Solsperse)\n\n아연미립자(개략\n\n치수\n\n20㎛×20㎛×1㎛)를 물에 첨가하여 조제한 아연미립자분산 수계 매체를 혼합하여, 잘 교반하여 1N 수산화나트륨으로 pH를 7로 조정하여, 출발원료로서의 에틸실리케이트와 아연미립자의 합계배합비율이 70중량%(에틸실리케이트는 SiO2 환산)이고, 출발원료로서의 에틸실리케이트와 아연미립자와 유기분산제의 혼합비율이, 9.9:90:0.1(중량비: 에틸실리케이트는 SiO2 환산)인 점도가 15cP의 수계 처리액을 얻었다.\n\nB. 에탄올로써 초음파 세정(탈지처리)하고 나서 15분간 자연 건조시킨 시험편을 상기의 수계 처리액에 침지하였다.\n\n수계 처리액으로부터 꺼낸 시험편을 원심건조기에 수용하여, 300rpm로 30초간 털어 냄으로써 시험편의 표면에 부착하고 있는 여분의 수계 처리액을 제거한 후, 100℃×5분간 대기중에서 가건조하였다.\n\n면에 도포한 수계 처리액을 가건조시킨 시험편을 다시 수계 처리액에 침지하였다.\n\n이렇게 해서 표\n\n수계 처리액으로부터 꺼낸\n\n시험편의 표면에 부착하고 있는 여분의 수계 처리액을 상기와 같이 하여 제거한 후, 표면에 수계 처리액의 도포막이 형성된 시험편에 대하여 320℃×10분간 대기중에서 열처리를 하여, 시험편의 표면에 아연미립자 함유량이90중량%의 아연미립자분산 내식성 피막을 형성하였다.\n\n형성된 아연미립자분산 내식성 피막의 막두께는 약 1O㎛이었다(단면관찰로부터).\n\nC. 이렇게 해서 제조된 아연미립자분산 내식성 피막을 표면에 가진 시험편 10개에 대하여 35℃의 5%염수를 500시간 분무한다고 하는 내식성 시험을 하였지만, 시험 후에 외관변화(녹의 발생)를 초래한 경우는 없었다.\n\n\n\n실시예 1과 같이 하여 조제한 출발원료로서의 에틸실리케이트를 20중량%(SiO2 환산)함유하는 pH가 3인 수용액과,유기분산제(상품명 솔스퍼스 S20000: 아비시아사 제조)와 평균 긴지름이 20㎛의 비늘조각형상 아연미립자(개략치수 20㎛×20㎛×1㎛)와 평균입자지름이 3㎛의 입상 알루미늄미립자를 물에 첨가하여 조제한 아연·알루미늄미립자분산 수계 매체를 혼합하고, 잘 교반하여 1N 수산화나트륨으로 pH를 7로 조정하고, 출발원료로서의 에틸실리케이트와 아연미립자와 알루미늄미립자의 합계배합비율이 70중량%(에틸실리케이트는 SiO2 환산)으로, 출발원료로서의 에틸실리케이트와 아연미립자와 알루미늄미립자와 유기분산제의 혼합비율이, 9.9:60:30:0.1(중량비:에틸실리케이트는 SiO2 환산)인 점도가 13cP의 수계 처리액을 얻었다.\n\n이 수계 처리액을 사용하여 실시예 1과 같은 시험편의 표면에 실시예 1과 같이 하여 아연미립자 함유량이 60중량%이고 알루미늄미립자 함유량이 30중량%의 아연·알루미늄미립자분산 내식성 피막을 형성하였다.\n\n두께는 약 10㎛이었다(단면관찰로부터).\n\n형성된 아연·알루미늄미립자분산 내식성 피막의 막이렇게 해서 제조된 아연·알루미늄미립자분산 내식성 피막을 표면에가진 시험편 10개에 대하여 실시예 1과 같은 내식성 시험을 하였지만, 시험 후에 있어서 외관변화(녹의 발생)를초래한 경우는 없었다.\n\n\n\n실시예 1과 같이 하여 조제한 출발원료로서의 에틸실리케이트를 20중량%(SiO2 환산) 함유하는 pH가 3의수용액과, 유기분산제(상품명 솔스퍼스 S 20000: 아비시아사 제조)와 평균 긴지름이 20㎛의 비늘조각형상 아연미립자(개략 치수 20㎛×20㎛×1㎛)와 평균입자지름이 3㎛의 입상 알루미늄미립자와 평균입자지름이 3㎛의 입상주석미립자를 물에 첨가하여 조제한 아연·알루미늄·주석미립자분산 수계 매체를 혼합하고, 잘 교반하여 1N 수산화나트륨으로 pH를 7로 조정하고, 출발원료로서의 에틸실리케이트와 아연미립자와 알루미늄미립자와 주석미립자의 합계배합비율이 70중량%(에틸실리케이트는 SiO2 환산)와, 출발원료로서의 에틸실리케이트와 아연미립자와알루미늄미립자와 주석미립자와 유기분산제의 혼합비율이, 9.9:55: 25:10:0.1(중량비: 에틸실리케이트는 SiO2 환산)인 점도가 18cP의 수계 처리액을 얻었다.\n\n이 수계 처리액을 사용하여 실시예 1과 같은 시험편의 표면에 실시예 1과 같이 하여 아연미립자 함유량이 55중량%이고 알루미늄미립자 함유량이 25중량%이며 주석미립자 함유량이 10중량%의 아연·알루미늄·주석미립자분산 내식성 피막을 형성하였다. 형성된 아연·알루미늄·주석미립자분산 내식성 피막의 막두께는 약 1O㎛이었다(단면관찰로부터).\n\n이렇게 해서 제조된 아연·알루미늄·주석미립자분산 내식성 피막을 표면에 가진 시험편 10개에 대하여 실시예 1과 같은 내식성 시험을 하였지만, 시험 후에있어서 외관변화(녹의 발생)를 초래한 것은 없었다.\n\n\n\nA. SiO2/Na2O가 4.0이고 pH가 12의 알칼리규산나트륨 수용액을 조제하였다.\n\n이 수용액과, 유기분산제(상품명 솔\n\n스퍼스 S20000:아비시아사 제조)와 평균 긴지름이 20㎛의 비늘조각형상 아연미립자(개략 치수 20㎛×20㎛×1㎛)를 물에 첨가하여 조제한 아연미립자분산 수계 매체를 혼합하고, 잘 교반하여, 출발원료로서의 알칼리규산나트륨과 아연미립자의 합계배합비율이 70중량%(알칼리규산나트륨은 SiO2 환산)이고, 출발원료로서의 알칼리규산나트륨과 아연미립자와 유기분산제의 혼합비율이, 9.9:9O:0.1(중량비:알칼리규산나트륨은 SiO2 환산)인 처리액을얻었다.\n\nB. 에탄올로써 초음파세정(탈지처리)하고 나서 15분간 자연 건조시킨 실시예 1과 같은 시험편을 상기의 처리액에 침지하였다.\n\n처리액으로부터 꺼낸 시험편을 원심건조기에 수용하여, 300rpm으로 30초간 털어 내는 것으로시험편의 표면에 부착하고 있는 여분의 처리액을 제거한 후, 100℃×5분간 대기중에서 가건조하였다.\n\n해서 표면에 도포한 처리액을 가건조시킨 시험편을 다시 처리액에 침지하였다.\n\n이렇게\n\n처리액으로부터 꺼낸 시험편의\n\n표면에 부착하고 있는 여분의 처리액을 상기와 같이 하여 제거한 후, 표면에 처리액의 도포막이 형성된 시험편에 대하여 150℃×30분간 대기중에서 열처리를 하여, 시험편의 표면에 아연미립자 함유량이 90중량%의 아연미립자분산 내식성 피막을 형성하였다.\n\n형성된 아연미립자분산 내식성 피막의 막두께는 약 1O㎛이었다(단면관찰로부터).\n\nC. 이렇게 해서 제조된 아연미립자분산 내식성 피막을 표면에 가진 시험편 10개에 대하여 35℃의 5% 염수를 500시간 분무한다고 하는 내식성 시험을 한 바, 200시간 경과시점에서 외관변화(녹의 발생)를 초래한 것이 7개 존재하였다.\n\n\n\n급냉 합금법으로 제작한, Nd:12원자%, Fe:77원자%, B:6원자%, Co:5원자%의 조성으로 이루어지는 평균 긴지름2\n\n150㎛의 합금분말에 에폭시 수지를 2wt% 가하고 혼련하여, 686N/mm 의 압력으로 압축성형한 후, 150℃에서 1시간 큐어함으로써 제작한, 바깥지름 30mm×안지름 28mm×길이 4mm의 링 형상 본드자석 시험편을 사용하여 실시예1과 같은 실험을 하여, 시험편의 표면에 아연미립자 함유량이 90중량%의 아연미립자분산 내식성 피막을 형성하였다.\n\n형성된 아연미립자분산 내식성 피막의 막두께는 약 10㎛이었다(단면관찰로부터).\n\n또, EPMA(전자선 마이\n\n크로 애널라이져: 시마즈제작소사제 EPM810)를 사용하여 아연미립자분산 내식성 피막을 표면에 가진 시험편의표면부근의 단면관찰을 하였다.\n\n그 2차 전자상을 도 7에 아연 X선상을, 도 8에 철 X선상을 도 9에 나타낸다.\n\n도 7∼도 9로부터, 시험편 본체표면으로부터 내부에 아연이 확산하고 있는 것이 판명되었다.\n\n에 의한 시험편 본체의 자기특성의 열화는 인정되지 않았다.\n\n또, 아연의 확산\n\n이렇게 해서 제조된 아연미립자분산 내식성 피막을 표면에 가진 시험편 10개에 대하여 35℃의 5% 염수를 500시간 분무한다고 하는 내식성 시험을 하였지만, 시험 후에 있어서 외관변화(녹의 발생)를 초래한 경우는 없었다.\n\n\n\n실시예 1에서 조제한 수계 처리액에, 증점제로서 히드록시에틸 셀룰로오즈를 그 농도가 1중량%가 되도록 첨가하여, 점도를 450cP로 조정하였다. 에탄올로써 초음파세정(탈지처리)하고 나서 15분간 건조시킨 실시예 1과 같은다수의 시험편을, 도 4에 나타낸 코팅치구에 세트하고, 시험편을 세트한 코팅치구를 도 6과 같이 하여 회전테이블의 대략 바깥둘레끝단부상에 장착하여, 도 1과 같이 하여 상기의 처리액을 사용한 딥 스핀코팅법을 하였다(원심력에 의해 털어 내기는 300rpm에서 30초간).\n\n그 후, 시험편이 세트된 채로의 코팅치구를 회전테이블로부터떼어내어, 시험편을 코팅치구에 세트한 채로 130℃×10분간 대기중에서 가건조하고, 계속해서, 표면에 수계 처리액의 도포막이 형성된 시험편에 대하여 350℃×30분간 대기중에서 열처리를 하였다.\n\n다음에, 시험편이 세트\n\n된 채로의 코팅치구를 상하 반전시켜 다시 회전테이블에 장착하여, 상기와 같은 공정으로 딥 스핀코팅법과 가건조와 열처리를 함으로써, 시험편의 표면에 아연미립자 함유량이 90중량%의 아연미립자분산 내식성 피막을 형성하였다.\n\n형성된 아연미립자분산 내식성 피막의 막두께는 10㎛이었다(단면관찰로부터).\n\n이렇게 해서 제조된 아\n\n연미립자분산 내식성 피막을 표면에 가진 시험편 10개에 대하여 실시예 1과 같은 내식성 시험을 하였지만, 시험후에 있어서 외관변화(녹의 발생)를 초래한 경우는 없었다.\n\n\n\n실시예 2에서 조제한 수계 처리액에, 증점제로서 히드록시에틸셀룰로오즈를 그 농도가 1중량%이 되도록 첨가하여, 점도를 440cP로 조정하였다.\n\n이 처리액을 사용하여, 에탄올로써 초음파세정(탈지처리)하고 나서 15분간 건조시킨 실시예 1과 같은 시험편의 표면에, 실시예 5와 같이 하여, 아연미립자 함유량이 60중량%이고 알루미늄미립자 함유량이 30중량%인 아연·알루미늄미립자분산 내식성 피막을 형성하였다.\n\n분산 내식성 피막의 막두께는 1O㎛이었다(단면관찰로부터).\n\n형성된 아연·알루미늄미립자\n\n이렇게 해서 제조된 아연·알루미늄미립자분산 내식성 피막을 표면에 가진 시험편 10개에 대하여 실시예 1과 같은 내식성 시험을 하였지만, 시험 후에 있어서 외관변화(녹의 발생)를 초래한 경우는 없었다.\n\n\n\n실시예 3에서 조제한 수계 처리액에, 증점제로서 히드록시에틸셀룰로오즈를 그 농도가 1중량%가 되도록 첨가하여, 점도를 460cP로 조정하였다.\n\n이 처리액을 사용하여, 에탄올로써 초음파세정(탈지처리)하고 나서 15분간 건조시킨 실시예 1과 같은 시험편의 표면에, 실시예 5와 같이 하여, 아연미립자 함유량이 55중량%이고 알루미늄미립자 함유량이 25중량%이고 주석미립자 함유량이 10중량%인 아연·알루미늄·주석미립자분산 내식성 피막을 형성하였다.\n\n형성된 아연·알루미늄·주석미립자분산 내식성 피막의 막두께는 10㎛이었다(단면관찰로부터).\n\n이\n\n렇게 해서 제조된 아연·알루미늄·주석미립자분산 내식성 피막을 표면에 가진 시험편 10개에 대하여 실시예 1과 같은 내식성 시험을 하였지만, 시험 후에 있어서 외관변화(녹의 발생)를 초래한 경우는 없었다.\n\n\n\n실시예 1과 같이 하여 조제한 출발원료로서의 에틸실리케이트를 20중량%(SiO2 환산) 함유하는 pH가 3인수용액과, 유기분산제(상품명 솔스퍼스 S 20000:아비시아사제)와 평균 긴지름이 20㎛의 비늘조각형상 아연미립자(개략 치수 20㎛×20㎛×1㎛)와 평균입자지름이 3㎛의 입상 알루미늄미립자와 평균입자지름이 3㎛의 입상 주석미립자와 평균입자지름이 1㎛의 알루미나미립자를 물에 첨가하여 조제한 아연·알루미늄·주석·알루미나미립자분산 수계 매체를 혼합하고, 잘 교반하여 1N 수산화나트륨으로 pH를 7로 조정하고, 출발원료로서의 에틸실리케이트와 아연미립자와 알루미늄미립자와 주석미립자와 알루미나미립자의 합계배합비율이 70중량%(에틸실리케이트는 SiO2 환산)이고, 출발원료로서의 에틸실리케이트와 아연미립자와 알루미늄미립자와 주석미립자와 알루미나미립자와 유기분산제의 배합비율이, 9.9:55:25:8:2:0.1(중량비:에틸실리케이트는 SiO2 환산)인 점도가 16cP의수계 처리액을 얻었다. 이 수계 처리액에, 증점제로서 히드록시에틸셀룰로오즈를 그 농도가 1중량%이 되도록 첨가하고, 점도를 465cP로 조정하였다.\n\n이 처리액을 사용하여, 에탄올로써 초음파세정(탈지처리)하고 나서 15분간 건조시킨 실시예 1과 같은 시험편의 표면에, 실시예 5와 같이 하여, 아연미립자 함유량이 55중량%이고 알루미늄미립자 함유량이 25중량%이고 주석미립자 함유량이 8중량%이고 알루미나미립자 함유량이 2중량%인 아연·알루미늄·주석·알루미나미립자분산 내식성 피막을 형성하였다.\n\n산 내식성 피막의 막두께는 10㎛이었다(단면관찰로부터).\n\n형성된 아연·알루미늄·주석·알루미나미립자분이렇게 해서 제조된 아연·알루미늄·주석·알루미나미립자분산 내식성 피막을 표면에 가진 시험편 10개에 대하여 실시예 1과 같은 내식성 시험을 하였지만, 시험후에 있어서 외관변화(녹의 발생)를 초래한 경우는 없었다.\n\n\n\n비교예 1에서 조제한 처리액에, 증점제로서 히드록시에틸셀룰로오즈를 그 농도가 1중량%이 되도록 첨가하여, 점도를 420cP로 조정하였다.\n\n이 처리액을 사용하여, 에탄올로써 초음파세정(탈지처리)하고 나서 15분간 건조시킨실시예 1과 같은 시험편의 표면에, 가건조 조건과 열처리 조건을 비교예 1과 같이 한 것 이외에는 실시예 5와같이 하여, 아연미립자 함유량이 90중량%의 아연미립자분산 내식성 피막을 형성하였다.\n\n내식성 피막의 막두께는 10㎛이었다(단면관찰로부터).\n\n형성된 아연미립자분산\n\n이렇게 해서 제조된 아연미립자분산 내식성 피막을 표면에 가진 시험편 10개에 대하여 실시예 1과 같은 내식성 시험을 한 바, 200시간 경과시점에서 외관변화(녹의 발생)를 초래한 것이 6개 존재하였다.\n\n산업상 이용 가능성\n\n본 발명은, 아연미립자분산 내식성 피막을 표면에 가진 희토류계 영구자석의 안정적이고 또한 간이한 제조방법,이렇게 해서 제조되는 내식성 희토류계 영구자석, 각종 형상의 박형 워크에 대한 도포막 형성에 적합한 딥 스핀코팅법 및 워크의 도포막 형성방법을 제공할 수 있는 점에서 산업상의 이용가능성을 가진다.\n\n도면의 간단한 설명\n\n도 1은, 본 발명의 워크의 딥 스핀 코팅방법의 일례의 개략공정도이다.\n\n도 2는, 본 발명의 회전테이블의 대략 바깥둘레끝단부상에 복수개의 평판 형상 워크를 유지한 상태의 일례의 개략도이다.\n\n도 3은, 본 발명의 회전테이블의 대략 바깥둘레끝단부상에 복수개의 링 형상 워크를 유지한 상태의 일례의 개략도이다.\n\n도 4는, 본 발명의 코팅치구의 일례의 개략 사시도이다.\n\n도 5는, 본 발명의 복수개의 평판형상 워크를 세트한 코팅치구의 개략도이다.\n\n도 6은, 본 발명의 복수개의 평판형상 워크를 세트한 코팅치구를 회전테이블의 대략 바깥둘레끝단부상에 장착한상태의 일례의 개략도이다.\n\n도 7은, 실시예 4에 있어서의 EPMA 2차 전자상이다.\n\n도 8은, 동 아연X선상이다.\n\n도 9는, 동 철X선상이다.', '技术领域\n\n本发明是一种稳定且简单的稀土类永磁体的制造方法,该稀土类永磁体的表面具有锌微粒分散耐蚀膜,以这种方式生产的耐腐蚀稀土类永磁体以及用于各种形状的薄工件的涂膜形成。本发明涉及合适的浸涂法和形成工件的涂膜的方法。\n\n背景\n\n稀土永磁体,例如以Nd-Fe-B永磁体为代表的R-Fe-B永磁体或以Sm-Fe-N永磁体为代表的R-Fe-N永磁体由于使用了大量廉价的材料并且具有高磁性能,因此当今尤其在各个领域中使用R-Fe-B永磁体。\n\n但是,由于稀土永磁体含有高反应性的稀土元素:R,它们易于在大气中氧化和腐蚀,并且在不经过任何表面处理的情况下使用,表面可能由于少量的酸,碱或湿气而引起。腐蚀从生锈开始,导致磁性能下降或不均匀。\n\n而且,生锈\n\n当将磁体组装到诸如磁路的设备中时,存在生锈扩散和污染周围部件的风险。\n\n有多种赋予稀土永磁体耐腐蚀性的方法,但是作为其中之一,存在一种使用硅化合物作为原材料在稀土永磁体的表面上形成耐蚀膜的方法。\n\n近年来,更多的这些耐腐蚀膜\n\n为了进一步提高性能,正在进行各种研究。\n\n例如,在日本未审查专利申请公开第2000-182813号(专利文献1)中,将包含分散有锌细颗粒的碱金属硅酸盐水溶液的处理溶液施加到稀土永磁体的表面上,然后进行热处理以分散锌细颗粒。已经提出了形成耐腐蚀涂层的方法。\n\n该方法利用了以碱金属硅酸盐为原料的膜的防腐蚀作用以及锌微粒的牺牲防腐蚀作用(没有潜在的牺牲作用),以及能够赋予稀土类永磁体高耐腐蚀性的方法。预期为。\n\n但是,在该方法中,为了使锌微粒均匀地分散在用于形成锌微粒分散耐蚀膜的处理液中,必须使处理液为碱性,因此将处理液涂布在稀土类永磁体的表面上。在这种情况下,在磁体的表面上产生了构成磁体的金属氢氧化物,并且磁体的表面覆盖有由这种金属氢氧化物制成的层,因此难以形成粘附性优异的锌微粒分散耐腐蚀膜。作为原料,存在由于以碱金属硅酸盐作为原料的膜的挠性差而容易产生裂纹的问题,并且存在废液处理繁琐的问题。\n\n另外,在日本特开2001-143949号公报(专利文献2)中,将含有硅有机化合物和平均粒径为1nm〜100nm的无机微粒的处理液涂布于稀土类永磁体的表面,然后进行热处理。提出了一种形成无机细颗粒分散体耐腐蚀涂层的方法。\n\n该方法是在稀土永磁体的表面上形成以硅有机化合物为原料的薄且致密的耐腐蚀膜,并且通过在膜成分中分散具有特定的平均粒径的无机微粒来进行成膜处理。它可以减轻内部应力,以防止出现诸如裂缝之类的物理缺陷。\n\n还期望该方法为能够对稀土永磁体赋予高耐腐蚀性的方法。\n\n然而,考虑到难以将纳米级无机细颗粒均匀地分散在水中,在处理液的制备中,使用有机溶剂如低级醇作为主要物质,并向其中添加少量水。在该条件下,需要使硅有机化合物水解聚合而形成溶胶溶液并分散无机微粒,因此,由于制备的处理液为酸性,因此将处理液涂布于稀土类永磁体的表面。当应用时,存在引起磁体腐蚀的问题,由于有机溶剂的挥发而使处理液的组成易于波动的问题,对环境造成不利影响的问题以及废液处理麻烦的问题。\n\n因此,本发明是一种稳定简单的稀土类永磁体的制造方法,该稀土类永磁体的表面具有锌微粒分散耐腐蚀膜,以这种方式制备的耐腐蚀稀土永磁体,适用于形成各种形状的薄工件用涂膜的浸涂液。本发明的目的是提供旋涂方法和在工件上形成涂膜的方法。\n\n发明详述\n\n鉴于上述问题,根据权利要求1所述的本发明的耐腐蚀稀土永磁体的制造方法包括硅酸烷基酯和平均粒径为1μm至50μm的锌细颗粒的水解聚合产物。将pH为6至8且粘度为1000cP以下的水基处理溶液施加至稀土永磁体的表面,然后在250至400℃下进行热处理以获得锌微粒分散耐腐蚀膜。 。\n\n另外,在权利要求2中\n\n在权利要求1所述的制造方法中,所述制造方法的特征在于,所述锌细颗粒为鳞片状。\n\n在根据权利要求3的制造方法中,在根据权利要求1的制造方法中,作为起始原料的硅酸烷基酯和锌细颗粒在水性处理液中的总混合比为40重量%至1重量%。其特征在于90重量%(硅酸烷基酯转化为SiO 2)。\n\n在根据权利要求4的制造方法中,在根据权利要求1的制造方法中,作为原料的硅酸烷基酯和锌细颗粒在水性处理液中的混合比为1:1至1其特征在于:19(重量比:以SiO 2计的硅酸烷基酯)。\n\n此外,根据权利要求5所述的制造方法,其特征在于,在根据权利要求1所述的制造方法中,将有机分散剂添加到所述水性处理液中。\n\n此外,根据权利要求6所述的制造方法,其特征在于,在根据权利要求1所述的制造方法中,所述锌微粒分散耐蚀涂层的厚度为1μm至50μm。\n\n此外,根据权利要求7所述的制造方法,其特征在于,在根据权利要求1所述的制造方法中,其他无机细颗粒进一步分散在所述锌细颗粒分散体耐腐蚀涂层中。\n\n另外,在技术方案8所述的制造方法中,在技术方案1所述的制造方法中,将水处理液涂布到稀土类永磁体的表面是浸涂法。做。\n\n此外,根据权利要求9所述的制造方法,其特征在于,在根据权利要求8所述的制造方法中,使用粘度为300cP至600cP的水性处理液。\n\n另外,在技术方案10所述的制造方法中,在技术方案8所述的制造方法中,在以垂直方向的中心轴为旋转轴旋转的旋转台​​的大致外周端设有多个稀土元素。通过将装有稀土永磁体的旋转台浸入水基处理液罐中并将稀土永磁体浸入,将稀土永磁体浸没并涂上水性处理液,然后从液体中取出,然后取出旋转台。其特征在于,浸渍旋涂法是通过旋转去除离心力过剩地附着在稀土永磁体上的水性处理液而进行的。\n\n另外,在技术方案11所述的制造方法中,在技术方案10所述的制造方法中,多个稀土类永磁体在旋转台的大致外周端以大致环状保持。它的特点。\n\n此外,根据权利要求12的制造方法的特征在于,在根据权利要求10的制造方法中,稀土永磁体是薄型磁体。\n\n此外,根据权利要求13所述的制造方法,其特征在于,在根据权利要求12所述的制造方法中,所述薄磁铁以其最宽的表面与所述旋转台的径向大致平行的方式被保持。去做。\n\n  另外,在技术方案14所述的制造方法中,在技术方案13所述的制造方法中,在将薄壁磁铁安装于旋转台的大致外周端时,将多个薄磁铁相互安装。其特征在于,使用涂覆夹具,该涂覆夹具可以设置成大致环形,以使其在远处的最宽表面大致平行于旋转台的径向。\n\n另外,第十五方面的制造方法的特征在于,在第十二方面所述的制造方法中,所述薄磁铁为板状,环状,弓状中的任一种。\n\n另外,在技术方案16所述的制造方法中,在技术方案14所述的制造方法中,在浸渍旋涂后,一边设置薄磁铁,一边从旋转台上取下涂布夹具,其特征在于,在薄磁体上进行热处理,同时将其放置在涂覆夹具上的任意位置。\n\n另外,如权利要求17所述,本发明的稀土类永磁体具有通过将平均粒径为1μm〜50μm的锌微粒分散在以硅酸烷基酯为起始原料的涂料成分中而得到的耐蚀涂层。它的特征是在表面上具有。\n\n另外,本发明第十八方面的稀土永磁体的特征在于,在本发明第十七方面的稀土永磁体中,所述耐腐蚀膜的锌细颗粒含量为50重量%至95重量%。 。\n\n另外,根据权利要求19所述的稀土永磁体,其特征在于,锌从所述磁体的表面扩散到根据权利要求17所述的稀土永磁体的内部。\n\n另外,技术方案20所述的稀土永磁体的特征在于,其是在技术方案17所述的稀土永磁体中,通过技术方案1所述的制造方法制造的。\n\n另外,根据权利要求21所述的本发明的工件的浸涂法,在以垂直方向的中心轴为旋转轴且能够旋转的旋转台​​的大致外周端上,形成有多个工件。其特征在于,通过将保持有工件的旋转工作台浸入涂料罐中,然后将涂料浸没并涂覆在工件上,然后从液体中取出涂料,并通过旋转工作台使离心力去除附着在工件上的涂料。去做。\n\n另外,根据权利要求22所述的本发明的工件的涂膜形成方法,其特征在于,将其安装在能够以上下方向的中心轴为旋转轴旋转的旋转台​​的大致外周端上时,如权利要求22所述。通过将配备有涂层固定装置的旋转工作台和将工件放置在油漆罐中的旋转工作台浸入并浸在工件上,然后使用涂层固定装置将其浸没在工件上,该涂层固定装置可以设置为基本上环形的形状,各个工件彼此分开,将其从液体中取出,旋转转盘以通过离心力甩掉工件上的多余涂料,从旋转台上取下带有工件架的涂布夹具,然后将工件架留在涂布夹具上的任何位置。其特征在于,根据需要进行干燥处理。\n\n根据本发明,一种稳定且简单的稀土基永磁体的制造方法,该稀土基永磁体在其表面具有锌微粒分散耐蚀膜,以这种方式生产的耐腐蚀稀土永磁体,适合于形成用于各种形状的薄工件的涂膜的浸料。提供了旋涂方法和在工件上形成涂膜的方法。\n\n实际例子\n\n在本发明中,锌细颗粒分散体耐腐蚀涂层与烷基硅酸盐的水解聚合产物的平均粒径为1μm至50μm。\n\n锌细颗粒\n\npH为6-8且粘度为1000 cP或更小的水性处理液(水性\n\n处理\n\n流体)应用于稀土金属基永磁体的表面,然后在250°C至400°C的温度下进行热处理。\n\n这样形成的锌微粒分散耐蚀膜对稀土类永久磁铁赋予高的耐腐蚀性,并且由于锌从磁铁主体的表面向内部扩散,因此密合性优异。\n\n在此,作为硅酸烷基酯,使用由通式SinO(n-1)(OR)(2n + 2)表示的那些。\n\n式中,R为烷基,\n\n尽管示例了具有1-4个碳原子的低级烷基,例如甲基,乙基,丙基和丁基,但是优选廉价,无毒且处理性能优异的乙基(硅酸乙酯)。\n\n另外,n是大于或等于1的整数。\n\n为了形成致密的膜,n优选为10以下的整数。\n\n另外,使用平均粒径为1μm〜50μm的锌微粒。\n\n如果平均粒径小于1μm,则存在锌微粒可能在水性处理液中引起二次凝集的危险,而如果平均粒径大于50μm,则存在锌细颗粒可能沉降于水性处理液中的危险。这是因为在任何情况下都可能难以制备其中储存稳定性优异的锌细颗粒均匀分散的水性处理液。\n\n银优选为2μm至30μm,更优选为5μm至20μm。\n\n另外,锌微粒的平均粒径\n\n锌细粒可以是任何形状,但是为了尽可能防止在锌细粒分散体耐蚀膜中形成针孔,将锌细粒层压并以高密度填充在膜成分中是有利的。为了将锌扩散到炉中,锌细颗粒与磁体的接触面积较大是有利的。\n\n优选为片状。\n\n因此,从该观点出发,当锌微粒为鳞片状时,锌微粒的平均粒径是指平均长径。\n\n水性处理液中作为起始原料的硅酸烷基酯和锌细颗粒的总混合比优选为40重量%至90重量%(硅酸烷基烷基酯,以SiO 2计)和60重量%至80重量%。更优选。\n\n如果总配合率不足40重量%,则为了得到具有充分的特性的膜厚的锌微粒分散耐蚀膜,必须增加制造工序数,另一方面,如果超过90重量%,则进行水处理。这是因为担心会影响液体的保存稳定性。\n\n硅酸烷基酯和作为原料的锌细颗粒在水性处理液中的混合比例使得所形成的锌细颗粒分散体耐腐蚀涂层的锌细颗粒含量为50至95重量%,为1:1至1:19(重量比)。硅酸烷基酯:优选以SiO 2换算使用,更优选以1:3-1:10使用。\n\n形成的锌细颗粒的耐腐蚀性\n\n如果膜中的锌微粒含量小于50重量%,则有可能不能充分发挥将锌微粒分散在膜成分中的效果,而如果大于95重量%,则以硅酸烷基酯为起始原料的原始的耐腐蚀膜。这是因为担心不能充分表现出自然特性。\n\n涂布在稀土永磁体的表面上的水性处理液的pH被指定为6至8。如果pH小于6,如专利文献2中所述,稀土永磁体可能被腐蚀。另一方面,如专利文献1所述,pH大于8时,有可能无法形成密合性优异的锌微粒分散耐蚀涂层的担心。\n\n当将施加于稀土永磁体的表面的水性处理液的粘度规定为1000cP以下时,如果水性处理液的粘度超过1000cP,则难以形成膜厚均匀的锌微粒分散耐蚀膜。因为有。\n\n具有优异均质性的水性处理液的制备为例如在酸性条件(约pH 3-4)或碱性条件(约pH 10-12)下通过烷基硅酸酯的水解聚合反应获得的水溶液中的平均颗粒。添加直径为1μm至50μm的锌细颗粒后,优选将pH值调节至6至8,同时将粘度保持或调节至100 cP或更小(粘度更优选为50 cP或更小,25 cP或更小)。更好)。\n\n另外,当硅酸烷基酯在酸性条件下进行水解聚合时,例如,可以使用氢氧化钠等来调节pH。\n\n  另外,当使硅酸烷基酯在碱性条件下进行水解聚合时,可以使用例如盐酸来调节pH。\n\n在制备水性处理液的步骤中使硅酸烷基酯进行水解聚合的原因是因为使形成的膜致密。\n\n在硅酸烷基酯的水解聚合反应中,并不总是必须进行所有要使用的硅酸烷基酯的水解聚合,并且可以是使一部分硅酸烷基酯进行水解聚合的形式。\n\n水解过程中\n\n聚合反应的程度可以通过添加的酸或碱的量或作为引起水解聚合反应的介质的水的量来调节。\n\n有一个案例。\n\n如果硅酸烷基酯的水解聚合度高,则即使水溶液的粘度为100cP,并且一旦粘度超过100cP,也可以通过添加温水等来降低粘度,但是可以进行水基处理。为了确保更优异的液体均质性,在水解聚合反应中水溶液的粘度超过100cP的情况下,优选适当添加水等以使粘度不超过100cP。\n\n另外,为了便于形成期望的膜厚的膜,在期望水性处理液的表面张力适当的情况下,例如,纤维素系增稠剂(羟基可以添加乙基纤维素,乙基纤维素,甲基纤维素,甲基羟丙基纤维素,乙基羟乙基纤维素,甲基乙基纤维素,示例性水溶性纤维素醚等)以调节粘度。\n\n为了使所形成的膜的膜厚增厚而使水性处理液的粘度为100cP以上时,优选在调制后的水性处理液中添加增稠剂来提高粘度。\n\n当将锌细颗粒添加至通过烷基硅酸酯的水解聚合获得的水溶液中时,优选使用有机分散剂以将锌细颗粒均匀地分散在水性处理液中。\n\n水性处理液中的有机物含量\n\n粉末的添加例如是通过将锌微粒添加到添加有有机分散剂的水中来制备锌微粒均匀分散在其中的锌微粒分散水性介质,以及锌微粒分散水性介质和硅酸烷基酯的水解聚合。可以通过混合反应的水溶液来进行。\n\n另外,作为有机分散介质,阴离子分散剂(脂肪族多元羧酸,聚醚聚酯羧酸盐,高分子量聚酯酸多胺盐,高分子量聚羧酸长链胺盐等),非离子分散剂(诸如聚氧乙烯烷基醚和脱水山梨糖醇酯的碳酸盐,磺酸盐,铵盐等),水溶性环氧树脂的聚合物分散剂(羧酸盐,磺酸盐,铵盐等),苯乙烯-丙烯酸共聚物,胶水等)考虑到与锌细颗粒的亲和力和成本,优选使用它。\n\n另外,为了形成膜厚足以表现出足够性能的锌细颗粒分散耐蚀膜,而不必重复制造工序的次数,优选地,施加至稀土永磁体表面的水性处理液的粘度为5 cP以上。做。\n\n在将水性处理液涂布到稀土永磁体的表面上时,可以采用浸涂法,喷涂法,旋涂法,浸涂法等。\n\n另外,为了提高与在稀土永磁体的表面上形成的锌微粒分散耐蚀膜的密合性,在施加水溶液处理溶液之前,对磁体进行喷砂处理或酸洗。可以进行酸洗处理。\n\n为了形成更均匀的水性处理液的涂膜,优选通过浸涂法将水性处理液涂布在稀土类永磁体的表面上。\n\n特别地,在以垂直方向的中心轴为旋转轴而能够旋转的旋转台​​的外周端部上保持有多个稀土类永磁体,将保持有稀土类永磁体的旋转台浸没在水处理液槽中。优选通过以下方式进行浸涂法:将水性处理液浸没并涂覆在系统永磁体上,然后将其从液体中去除,并旋转转盘以通过离心力甩掉额外附着在稀土永磁体上的水基处理液。 。\n\n这是在薄的工件表面上形成厚度约为10μm的薄涂膜的方法,将工件浸入涂料槽中后将其浸入并涂覆在工件上后,将其从液体中移出并高速旋转以留出余量。在某些情况下,采用通过去除附着的涂料的浸涂法。\n\n作为迄今为止已知的用于薄壁工件的浸涂法,例如,已经提出了日本专利特开No.7-201088作为在光盘上施加保护膜的方法。\n\n在这种方法中,将多个基板以规则的间隔垂直放置在水平主轴上,以低速绕主轴旋转,然后将其浸入除基板中心以外的保护膜材料中以施加材料,然后将其从材料中拉出。通过高速旋转可以甩掉物料。\n\n另外,在日本未审查专利申请公开平3-86271中,使用了悬挂器以使待涂覆物体的涂覆表面(平面)保持几乎水平,同时使包括悬挂器和待涂覆物体的整个中心通过。已经提出了一种深旋涂方法,该方法包括通过旋转垂直线作为旋转轴通过离心力去除涂料的步骤。\n\n另外,在日本专利申请特开No.2000-164556中,使用了一种晶片载体,其中具有多个凹槽的一对保持构件面向凹槽侧,以利用相对的凹槽来保持晶片的周边。已经提出了一种方法,在该方法中,通过旋转载体使离心力将保持在载体中的多种晶片状液体甩开,使得其凹槽基本上在旋转加速度的方向上。\n\n在对大量的薄工件采用浸涂旋涂法的情况下,与工件的形状无关,优选能够对所有工件进行均匀的涂布而不会对全部工件造成膜厚不均。\n\n以上专利文献中描述的任何方法都具有缺点,无论其多少。\n\n但是,鉴于此,\n\n具体地,在日本专利特开No.7-201088中描述的方法的缺点在于,由于必须将工件保持在其中心,所以该方法只能应用于环形工件。\n\n另外,在该方法中,如果在工件与主轴之间产生的摩擦力不均匀,则使水平主轴与环状工件的内周面接触并通过两者之间产生的摩擦力使工件自身旋转。由于机器的转速不均匀,因此存在无法均匀涂覆所有工件的缺点,或者由于难以高速旋转工件而产生高粘度涂料(例如粘度超过500 cP)的缺点。在用相同的东西涂覆工件的情况下,存在的缺点是存在不能充分去除过量涂料的风险。\n\n另外,在日本特开平3-86271号公报中记载的方法中,存在由于工件的平面大致水平地保持而在表面与下表面之间附着的涂料的量产生差异的可能性。\n\n另外,在日本专利申请特开No.2000-164556中描述的方法中,由于工件的一个平面被保持为与旋转轴线相反,因此根据夹持位置,每个工件的旋转速度是不同的,从而对所有工件施加均匀的涂层。缺点是有可能无法完成。\n\n但是,根据本发明提出的浸涂法,即使不进行膜厚不均,即使进行大量的薄壁加工也能够形成均匀的涂膜。\n\n在下文中,将根据需要参照附图描述本发明中提出的浸涂法,但是本发明中提出的浸涂法不限于以下描述和解释。\n\n本发明的提案\n\n以下描述的浸涂法可以应用于任何形状的工件,而与工件的形状无关,但是在下面的描述中,特别优选用于涂覆薄的工件,例如平板形,环形,弓形等。例如,将本发明的方法应用于平板状工件和环状工件的涂层。\n\n  图1是本发明提出的浸涂法的一个例子的示意性工艺图。\n\n按顺序解释流程,\n\n(a)首先,在能够以上下方向的中心轴1为旋转轴旋转的旋转工作台2的大致外周端,在其最宽的面(平面)上载置多个平板状的工件X。保持近似环形,以便在径向上近似平行。\n\n(b)接着,通过气缸3使涂料箱4上升,将保持有工件X的旋转工作台2浸入涂料箱4内,从而将涂料浸入到工件X中。 ·涂层。\n\n(c)接着,通过气缸3使涂料罐4下降,并从液体中取出旋转台2。 (d)最后,以电动机5为旋转台2,以中心轴1为旋转轴(最好至少使旋转方向反转一次),使工件X的平面旋转。通过离心力清除附着在其上的多余涂料。\n\n根据该方法,即使是粘度较高(例如,粘度超过200cP)的涂料,也可以通过调整旋转台2的大小或控制转速来进行,由于可以自由地调节涂料的附着量,因此可以自由地调节所形成的涂膜的膜厚。\n\n另外,旋转台2的台面优选为网状,以免引起涂料的堆积。\n\n图2(a)示出了在旋转工作台2的大致外周端以大致环状保持多个平板状工件X,使它们各自的平面在径向上大致平行的状态。图2是一个例子的示意性局部立体图。\n\n图3是从上方观察保持工件X的旋转工作台2的图。\n\n图2(b)是,\n\n工件X被放置在设置在旋转工作台2上的两个保持构件11(优选为横截面为半圆形的棒状)上。\n\n如图1所示,工件X可以直接安装在旋转工作台2上,但是通过采用这种安装方法,可以使在工件X的下表面上形成的痕迹最小化( 2(c))。\n\n通过相对于保持构件11在垂直方向上设置的间隔件12,使各个平板工件X彼此保持分开。\n\n另外,垫片12还具有防止工件X的横向旋转的功能。\n\n优选的是,书12与垫片12之间的距离比工件X的厚度宽。\n\n这是因为如果字母12接触,则接触标记变得显着。\n\n直接\n\n连续空间\n\n始终在作品的两侧(X)\n\n另外,由于垫片12的截面为圆形,因此能够使随着旋转台2的旋转而在工件X的平面上产生的接触痕迹最小化。\n\n在步骤(d)中,使用电动机5以中心轴1为旋转轴使旋转工作台2旋转,并通过离心力去除过度附着在平面工件X的平面上的涂料。此时,工件(X)试图通过离心力沿径向突出,但是通过附图的近似结构固定在旋转工作台2上,并且离心突出控制杆13沿水平方向设置,它具有通过接触工件X的外侧来控制工件X在径向上的突出的功能。\n\n此外,相对于离心突起控制杆13在旋转轴方向上设置的间隔件14具有在被离心力摇动的过程中限制工件X的移动的功能。\n\n图3(a)是将多个环状的工件Y以大致圆环状的方式保持在旋转台2的大致外周端上的状态,以使它们的平面在径向上大致平行。图2是一个例子的示意性局部立体图。\n\n功(Y)是\n\n通过该表面的概略结构固定在旋转台2上的水平钩部件15被环状部悬挂保持。\n\n水平钩构件15优选为具有圆形截面的杆状。\n\n另外,水平钩构件15的悬吊有工件Y的部分例如优选形成为V字状(参照图3(b))。\n\n水平钩\n\n通过使构件15为这种结构,可以使在工件Y的环部上产生的悬挂痕迹最小化。\n\n如图1至3所示,当浸涂旋涂多个薄工件时,可以将一个薄工件直接保持在旋转台上,但是将其安装在旋转台的大致外周端上。在这种情况下,可以使用可以设置成大致环形的涂覆夹具,以使得多个薄工件的最宽表面彼此分离并且其最宽表面基本上平行于旋转台的径向。\n\n图4示出了当安装在转台的大致外周端上时,多个扁平工件被设置为大致环形,以使得其平面大致平行于转台的径向,同时各个工件彼此分离。图3是可以完成的涂覆夹具的示例的示意性透视图。\n\n涂覆夹具Z包括在水平方向上平行布置的两个间隔件,以保持多个扁平工件X,使得它们的平面在竖直方向上基本平行,而各个工件彼此分离。当通过将保持杆21与附接件(22)安装在一起并且将夹具与工件(X)安装在旋转台的外周端上来使旋转台旋转时,离心力与工件(X)的外侧接触。为了限制工件X在径向上的突出,至少设置有具有平行于水平方向布置的间隔件24的离心式突出调节杆23,但是保持杆21当夹具上下翻转时,多个工件(X)彼此分离,并且其平面在竖直方向上基本平行,并且工件(X)的上部是保持杆(21)。杆状构件25还设置有两个间隔件26,所述间隔件平行于保持杆21布置以保持空间。\n\n当夹具竖直倒置时,用于将工件X保持为上端的保持杆21用作杆状构件25。\n\n图5是设置有多个薄工件X的涂布夹具Z的示意性主视图(a)和D-D剖视图(b)。\n\n保持杆21和杆状部件25优选具有圆形的截面。\n\n这是因为它可以最大程度地减少标记数量。\n\n优选地,形成在薄工件X的下表面上的放置并离心突出的控制杆23也具有圆形横截面。\n\n这是因为可以使在成型体(X)的外侧产生的接触痕迹最小化。\n\n优选4)和间隔件26也具有圆形截面。\n\n因为可以。\n\n挫败\n\n另外,垫片22和垫片2\n\n另外,为了最小化在薄工件X的平面上产生的接触痕迹,并不一定需要两个保持杆21和杆状构件25,而是可以是两个。\n\n图4所示的涂布夹具Z例如如下使用。\n\n图6是在旋转工作台2的大致外周侧端部安装有通过自动装卸自如的安装装置放置多个平板状工件X的涂布夹具Z的状态的一例。图3是其示意性局部平面图。\n\n根据图1所示的示意性过程图,涂料罐4通过气缸3上升,并且在涂料罐4中安装有配备有设置有工件X的涂料夹具Z的旋转工作台2。 )将涂料浸入并涂覆在工件(X)上。\n\n从液体中取出模块(2)。\n\n接着,通过气缸3使涂料罐4下降至旋转框架的端部,通过电动机5使旋转工作台2以中心轴1为旋转轴进行旋转,从而使工件X旋转。浸涂法是通过离心力去除表面平面上的多余涂料而完成的。\n\n选项\n\n一段时间后,从旋转工作台(2)上卸下装有工件(X)的涂覆夹具(Z),然后将工件(X)放置在涂覆夹具(Z)上的任意位置。干燥处理(自然干燥或加热干燥)。\n\n之后,工作(X)\n\n  将设置的涂覆夹具Z上下翻转并再次安装在旋转台2上,并且以与上述相同的过程再次进行浸涂。\n\n以此方式,在第一涂层和第二涂层中,工件X上放置的标记或接触标记的位置改变,使得第二涂层导致工件X上的第一涂层。由于还对所放置的标记或接触标记施加了涂层,因此可以对工件(X)施加更均匀的涂层。\n\n之后,设定功(X)\n\n从旋转工作台(2)上卸下涂层夹具(Z),并在所需的任何位置干燥放置在涂层夹具(Z)上的工件(X)(自然干燥或加热干燥)。另外,即使进行大量的工作,也可以有效地形成均匀的涂膜而不会引起膜厚不均。\n\n另外,当通过浸涂法将水性处理液涂布到稀土永磁体的表面上时,通过使用粘度为300cP至600cP的水性处理液,可以形成更均匀的涂膜。\n\n如上所述,具有这种粘度的水性处理液优选通过在制备后的水性处理液中添加纤维素类增稠剂等来提高粘度(添加增稠剂使得水性处理液中含有1重量%至2重量%。希望这样做)。\n\n在表面上形成有水性处理液的涂膜的稀土类永久磁铁的热处理在250℃〜400℃下进行。\n\n这些温度\n\n当在一定条件下进行热处理时,在成膜过程中,含水处理液中所含的锌细颗粒的一部分从磁体的表面适当地扩散到内部,从而形成附着力优异的锌细颗粒分散耐腐蚀膜。\n\n热处理温度\n\n如果低于250℃,则锌的扩散不能充分地发生,并且水分在稀土永磁体的表面上残留而没有充分的蒸发,这随后可能导致磁体的腐蚀。如果该含量高,则由于锌的扩散发生超过必要的程度,因此担心会不利地影响磁性能。\n\n该时间例如优选为10分钟至120分钟。\n\n热处理\n\n此外,可以通过在100℃至170℃下临时干燥涂覆在水基处理液的表面上的稀土永磁体,从而形成更均匀的锌细颗粒分散体耐腐蚀膜。\n\n锌微粒分散耐腐蚀涂层优选形成为具有1μm至50μm,更优选5μm至15μm的厚度。\n\n如果膜厚不足1μm,则有可能无法充分发挥作为锌微粒分散耐蚀膜的特性,而如果膜厚超过50μm,则有可能无法充分确保稀土类永磁体的有效体积。成为。\n\n此外,其他无机细颗粒可以进一步分散在锌细颗粒分散体耐蚀膜中。\n\n对于无机细颗粒,是\n\n例如,诸如铝,锡,锰,镁,钛,镍等的金属颗粒是非潜在非金属的。\n\n例如,通过将铝微粒与锌微粒一起分散,可以有效地防止由于锌微粒的腐蚀而引起的白锈(碱式碳酸锌)的形成。此外,为了进一步减少在膜中可能出现的针孔并提高膜的耐腐蚀性,可以将诸如Al 2 O 3,TiO 2,SiO 2或云母的氧化物细颗粒与锌细颗粒一起分散在膜中。\n\n当将其他无机细粒与锌细粒一起分散时,所形成的耐腐蚀涂层的锌细粒和其他无机细粒的总含量优选为95重量%以下。\n\n作为稀土类永磁体,已知的稀土元素例如以Nd-Fe-B永磁体为代表的R-Fe-B永磁体或以Sm-Fe-N永磁体为代表的R-Fe-N永磁体。和永磁体。\n\n其中,R-Fe-B系统\n\n永磁体是特别期望的,因为它们具有高的磁性并且在批量生产和经济方面都极好。\n\n稀土永磁\n\n磁体可以是烧结磁体或粘结磁体。\n\n稀土永磁体中的稀土元素(R)为Nd,Pr,Dy,Ho,Tb和Sm中的至少一种,或者进一步为La,Ce,Gd,Er,Eu,Tm,Yb,Lu,Y。优选包含它们中的至少一种。\n\n另外,通常R中的一个是足够的,但是在实际使用中,出于可用性的方便等原因,也可以使用两种以上的混合物(高粘金属,ym等)。\n\n另外,通过添加Al,Ti,V,Cr,Mn,Bi,Nb,Ta,Mo,W,Sb,Ge,Sn,Zr,Ni,Si,Zn,Hf,Ga中的至少一种,矫顽力可以改善力或消磁曲线的矩形度,改善可制造性,并降低价格。\n\n此外,通过用Co代替Fe的一部分,可以在不损害所获得的磁体的磁特性的情况下提高温度特性。\n\n[例]\n\n在下文中,将通过实施例和比较例更详细地描述本发明,但是本发明不限于此。\n\n\n\n作为原材料,将电解铁,硼铁和作为R的Nd混合在所需的磁性成分中,熔融并铸造,然后通过机械粉碎进行粗粉碎,然后细粉碎以获得粒径为3μm至10μm的细粉。将其在10kOe的磁场中成型后,在氩气氛中在1100℃下烧结1小时,然后对所得的烧结体在600℃下进行2小时的时效处理,从组成为15Nd-7B-78Fe的磁铁体切出36mm。使用尺寸为×32mm×3mm的板状烧结磁体试验片进行以下实验。\n\nA.硅酸乙酯的水解聚合是通过向硅酸乙酯40(以SiO 2计重量比为40%的硅酸乙酯的无色透明液体)中加入水,并用1N盐酸和以硅酸乙酯为原料将pH调节至3来进行的。制备了含20%重量(以SiO2计)的水溶液。\n\nS20000:由Avecia Corporation制造}和\n\n平均\n\n这种水溶液和有机分散剂{商品名Solspurs的长径\n\n20㎛\n\n秤\n\n(Solsperse)\n\n锌细颗粒(约\n\n尺寸\n\n将20μm×20μm×1μm)加到水中,混合制得的锌微粒分散水介质,充分搅拌,以1N氢氧化钠调节pH至7,以硅酸乙酯与锌微粒的总混合比例为起始原料。这是70重量%(硅酸乙酯被转化为SiO 2),并且作为起始原料的硅酸乙酯,锌细颗粒和有机分散剂的混合比为9.9:90:0.1(重量比:硅酸乙酯被转化为SiO 2)我拿到了液体。\n\nB.用乙醇进行超声波清洗(脱脂处理)后,将自然干燥15分钟的试验片浸入处理水溶液中。\n\n从水性处理液中取出的试验片容纳在离心干燥机中,通过以300 rpm的速度摇动30秒将附着在试件表面上的多余的水性处理液去除,然后在100°C的空气中预干燥5分钟。\n\n将预先涂布在棉布上的水系处理液预干燥而得的试验片再次浸入水系处理液中。\n\n像这样的桌子\n\n从水性处理液中取出\n\n如上所述除去附着在试片表面上的多余的水基处理液后,在其上形成有水基处理液的被膜的试片上,在320℃的空气中进行10分钟的热处理,并在试片的表面上形成锌微粒的含量。形成了按重量计90%的锌细颗粒的耐腐蚀涂层。\n\n所形成的锌微粒分散耐蚀膜的厚度为约10μm(从截面观察)。\n\nC.进行了在35°C的温度下对表面镀锌细颗粒分散体耐蚀涂层的10个样品进行5%盐水喷雾500小时的耐腐蚀性试验,但是,如果试验后外观发生变化(出现锈蚀),没有\n\n\n\n以与实施例1相同的方式制备的,pH为3的水溶液包含20%重量(按SiO2计)的硅酸乙酯,有机分散剂(商品名Solspurs S20000:由Avisia制造)和平均长径为20μm的水垢通过将薄片状的锌微粒(尺寸约20 µm×20 µm×1 µm)和平均粒径为3 µm的粒状铝微粒制成的锌铝微粒分散水介质,并充分搅拌至1N氢氧化钠中将pH调节至7,并且作为起始原料的硅酸乙酯,锌细颗粒和铝细颗粒的总混合比为70重量%(硅酸乙酯转化为SiO 2),并且将硅酸乙酯和锌细颗粒,铝细颗粒和有机分散剂作为起始原料。获得的混合比为9.9:60:30:0.1(重量比:就SiO 2而言为硅酸乙酯),粘度为13 cP。\n\n使用该水性处理液,与实施例1同样地在试验片的表面上形成锌微粒含量为60重量%,铝微粒含量为30重量%的锌-铝微粒分散耐蚀膜。\n\n厚度为约10μm(从截面观察)。\n\n形成的锌-铝微粒分散耐蚀膜的膜对在表面上以此方式制备的锌-铝微粒分散耐蚀膜的10个试验片上进行与实施例1相同的耐腐蚀性试验,但是在试验后观察到外观变化(生锈)。没有案件。\n\n\n\n以与实施例1相同的方式制备的,pH为3的水溶液含有20重量%(以SiO 2换算)的硅酸乙酯作为起始原料,有机分散剂(商品名Solspurs S 20000:由Avisia制造),平均长径为20μm。锌/铝/锡是通过在水中添加鳞状锌颗粒(尺寸约为20㎛×20㎛×1㎛),平均粒径为3㎛的铝颗粒和平均粒径为3㎛的锡细颗粒而制得的将分散在细颗粒中的水性介质混合并用1N氢氧化钠充分搅拌以将pH值调节至7,作为起始原料的硅酸乙酯,锌细颗粒,铝细颗粒和锡细颗粒的总混合比例为70重量%(硅酸乙酯转化为SiO2) ),硅酸乙酯,锌细颗粒,铝细颗粒,锡细颗粒和有机分散剂作为起始原料的混合比为9.9:55:25:10:0.1(重量比:硅酸乙酯转化为SiO2),粘度为18 cP。我拿到了液体。\n\n使用该水性处理液,与实施例1同样地在试验片的表面上进行55重量%的锌微粒,25重量%的铝微粒,10重量%的锡微粒的处理。形成锡微粒分散耐蚀膜。所形成的锌-铝-锡微粒分散耐腐蚀膜的厚度为约10μm(从截面观察)。\n\n对在表面上具有锌,铝和锡微粒分散耐腐蚀性涂层的10个试验片进行了与实施例1相同的耐腐蚀性试验,但是试验后外观没有变化(生锈的发生)。\n\n\n\n制备SiO 2 / Na 2 O以制备4.0的碱性硅酸钠水溶液和pH 12。\n\n该水溶液和有机分散剂(品牌名称sol\n\n将Spurs S20000(由Avisia Co.制造)和平均长径为20μm的鳞片状的锌微粒(约20μm×20μm×1μm)加入水中,将分散在锌微粒中的水性介质混合并充分搅拌。 ,作为原料的碱金属硅酸钠和锌细颗粒的总混合比为70重量%(将碱金属硅酸钠转化为SiO2),并且作为原料的碱金属硅酸钠和锌细颗粒与有机分散剂的混合比为9.9:9O:0.1 (重量比:以SiO 2计的碱式硅酸钠)。\n\nB.用乙醇超声清洗(脱脂处理)后,将与实施例1相同的试验片自然干燥15分钟,将其浸入处理溶液中。\n\n从处理液中取出的试验片容纳在离心干燥机中,通过以300 rpm摇动30秒将附着在试验片表面上的多余处理液除去,然后在100°C的空气中预干燥5分钟。\n\n然后,将通过预干燥施加在表面上的处理液而获得的测试片再次浸入处理液中。\n\n像这样\n\n从处理液中取出的试片中\n\n如上所述除去附着在表面上的多余的处理液后,在表面上形成有处理液的被膜的试验片上,在150℃的空气中进行30分钟的热处理,该试验片的表面上的锌微粒的含量为90重量%。形成锌微粒分散耐蚀膜。\n\n所形成的锌微粒分散耐蚀膜的厚度为约10μm(从截面观察)。\n\n进行耐腐蚀性试验,以35℃在表面上具有锌微粒分散耐腐蚀性涂层的10个样品上喷500小时的5%盐水在500℃下喷涂500小时,并在200小时后观察到外观变化(生锈)。造成了7件事。\n\n\n\n由淬火合金法制得的平均长径组成为Nd:12原子%,Fe:77原子%,B:6原子%和Co:5原子%2\n\n通过向150μm合金粉末中添加2 wt%的环氧树脂,进行捏合,在686 N / mm的压力下压缩成型并在150°C的温度下固化1小时,制得外径为30 mm×内径为28 mm×长度为4 mm的环形粘结磁体。使用该试验片进行与实施例1相同的实验,在试验片的表面上形成锌微粒含量为90重量%的锌微粒分散耐蚀膜。\n\n所形成的锌微粒分散耐蚀膜的膜厚为约10μm(从截面观察)。\n\n另外,EPMA(电子束\n\n计时分析仪:Shimadzu Corporation制造的EPM810)用于观察在其表面上具有锌微粒分散耐腐蚀涂层的测试件的表面附近的横截面。\n\n二次电子图像在图7中显示为锌X射线图像,在图8中显示为铁X射线图像。\n\n从图7至图9发现,锌从试件主体的表面扩散到内部。\n\n没有发现试验片的主体的磁性能下降。\n\n还有,锌的扩散\n\n进行了在表面上如此制备的锌细颗粒分散体抗腐蚀涂层的10个样品在35°C的5%盐水中进行500小时的耐腐蚀试验,但是在试验后没有出现外观变化(生锈的情况)的情况。 。\n\n\n\n向实施例1中制备的水性处理液中,添加羟乙基纤维素作为增稠剂,使其浓度为1重量%,将粘度调整为450cP。用乙醇进行超声波清洗(脱脂处理)并干燥15分钟后,在图4所示的涂布夹具上设置多个与实施例1相同的试验片,在图4所示的设置了该夹具的涂布夹具上进行试验。如图1所示,安装在外周端上,使用上述处理液进行浸渍旋涂法(通过300rpm的离心力搅拌30秒)。\n\n之后,将具有测试件组的涂覆夹具从转台上移开,并且在将测试件放置在涂覆夹具上的同时将测试件在130°C的大气中预干燥10分钟,然后在表面上形成具有水性处理溶液的涂膜的测试件。在空气中在350℃下进行30分钟的热处理。\n\n接下来,放置试件\n\n通过上下翻转涂覆的夹具并将其再次安装在转台上,以与上述相同的方法进行浸涂,预干燥和热处理,以在试件表面上形成锌细颗粒含量为90%重量的锌细颗粒分散耐腐蚀膜。是的\n\n所形成的锌微粒分散耐蚀膜的厚度为10μm(从截面观察)。\n\n哦,是这样制造的\n\n对表面具有柔软性粒子分散性耐蚀膜的10个试验片进行了与实施例1相同的耐蚀性试验,但在试验后没有引起外观变化(生锈)的情况。\n\n\n\n 向实施例2中制备的水性处理液中,添加羟乙基纤维素作为增稠剂,使其浓度为1重量%,将粘度调整为440cP。 \n\n 使用该处理液,在与实施例1相同的试验片的表面上,用乙醇进行超声波清洗(脱脂处理)后,干燥15分钟,与实施例5同样地,锌微粒含量为60重量%,铝微粒含量为60重量%。 形成30重量%的锌铝微粒分散耐蚀膜。 \n\n 分散的耐蚀膜的膜厚为10μm(从截面观察)。 \n\n 形成锌/铝细颗粒 \n\n 对在表面具有锌铝粒子分散耐蚀涂层的10个试验片进行了与实施例1相同的耐腐蚀性试验,但是在试验后没有引起外观变化(生锈)的情况。 \n\n \n\n向实施例3中制备的水性处理液中,添加羟乙基纤维素作为增稠剂,使其浓度为1重量%,将粘度调节为460cP。\n\n使用该处理液,与实施例1同样地在试样上用乙醇进行超声波清洗(脱脂处理),然后干燥15分钟,与实施例5同样地使锌微粒含量为55重量%,铝微粒含量为5重量%。形成具有25重量%和10重量%的锡微粒含量的锌铝锡微粒分散耐蚀膜。\n\n所形成的锌-铝-锡微粒分散耐腐蚀涂层的厚度为10μm(从截面观察)。\n\n这个\n\n对在表面上具有锌,铝,锡微粒分散耐腐蚀性涂层的10个试验片进行了与实施例1相同的耐腐蚀性试验,但是在试验后没有引起外观变化(生锈)的情况。\n\n\n\n以与实施例1相同的方式制备的,pH为3的水溶液包含20重量%(以SiO 2计)的硅酸乙酯作为起始原料,有机分散剂(商品名Solspurs S 20000:由Avisia制造)和平均长径为20μm。含有片状锌微粒(尺寸约为20μm×20μm×1μm),平均粒径为3μm的粒状铝微粒,平均粒径为3μm的粒状锡微粒和平均粒径为1μm的氧化铝水。将分散在通过添加到混合物中而制得的锌,铝,锡,氧化铝细颗粒中的水性介质混合,充分搅拌,并以1N氢氧化钠和硅酸乙酯为起始原料,锌细颗粒,铝细颗粒,锡细颗粒和氧化铝细颗粒将pH调节至7。的总混合比为70重量%(硅酸乙酯转化为SiO2),硅酸乙酯,锌细颗粒,铝细颗粒,锡细颗粒,氧化铝细颗粒和有机分散剂的混合比例为9.9:55:25:8:获得了粘度为2:0.1(重量比:以SiO 2计的硅酸乙酯)为16cP的水基处理液。向该水性处理液中加入羟乙基纤维素作为增稠剂,使其浓度为1重量%,并且将粘度调节为465cP。\n\n使用该处理液,与实施例5同样地,在与实施例1相同的试样的表面上,用乙醇进行超声波清洗(脱脂处理),干燥15分钟,锌微粒含量为55重量%,铝微粒含量为55重量%。形成锌铝-锡-氧化铝微粒分散耐腐蚀膜,其中25重量%,锡微粒的含量为8重量%,氧化铝微粒的含量为2重量%。\n\n耐酸腐蚀膜的膜厚为10μm(从截面观察)。\n\n对形成的锌,铝,锡,氧化铝细粉粉末在表面具有锌,铝,锡,氧化铝细粉分散耐蚀膜的10个试验片上进行与实施例1相同的耐腐蚀性试验,但试验后的外观变化(没有引起生锈的情况。\n\n\n\n向比较例1中制备的处理液中,添加羟乙基纤维素作为增稠剂,使其浓度为1重量%,将粘度调整为420cP。\n\n使用该处理溶液,在与实施例1相同的试验片的表面上,用乙醇进行超声波清洗(脱脂处理),然后干燥15分钟,与比较例1相同,不同之处在于,预干燥条件和热处理条件为这样,形成了锌微粒含量为90重量%的锌微粒分散耐蚀膜。\n\n耐腐蚀膜的膜厚为10μm(从截面观察)。\n\n形成的锌细颗粒的分散\n\n对在表面具有如此制得的锌微粒分散耐蚀涂层的10个试验片进行与实施例1相同的耐蚀性试验,发现有6种在200小时时引起外观变化(生锈)的原因。\n\n工业可用性\n\n本发明是一种稳定简单的稀土类永磁体的制造方法,该稀土类永磁体的表面具有锌微粒分散耐蚀膜,以这种方式生产的耐腐蚀稀土永磁体,浸涂旋转法适用于形成各种形状的薄工件的涂膜。具有工业适用性,因为它可以提供涂布方法和形成工件的涂膜的方法。\n\n附图说明\n\n附图说明图1是用于本发明的工件的浸涂方法的实例的示意性工艺图。\n\n图2是表示将多个平板状的工件保持在本发明的旋转工作台的大致外周端的状态的一例的示意图。\n\n图3是表示将多个环状的工件保持在本发明的旋转工作台的大致外周端的状态的一例的示意图。\n\n图4是本发明的涂覆夹具的示例的示意性透视图。\n\n图5是涂覆夹具的示意图,其中设置了本发明的多个扁平工件。\n\n图6是表示将放置有本发明的多个扁平工件的涂布夹具安装在旋转台的大致外周端的状态的一例的示意图。\n\n图7是实施例4中的EPMA二次电子图像。\n\n图8是铜锌X射线图像。\n\n图9是铜铁X射线图像。');
INSERT INTO `os_patent_instruction_text` VALUES (13005, 22834, 'TECHNICAL FIELD\n\n[0001]The present invention relates to a stable and simple method for producing a rare earth metal-based permanent magnet having on the surface thereof a corrosion-resistant film containing fine zinc particles dispersed therein, a corrosion-resistant rare earth metal-based permanent magnet produced by the method, a dip spin coating method being suitable for forming a coating film on thin type work pieces having various shapes, and a method for forming a coating film on a work piece.\n\nBACKGROUND ART\n\n[0002]Rare earth metal-based permanent magnets, for instance, R—Fe—B based permanent magnets represented by a Nd—Fe—B based permanent magnet, or R—Fe—N based permanent magnets represented by a Sm—Fe—N based permanent magnet, etc., utilize inexpensive materials abundant in resources and possess high magnetic properties, and particularly among them, R—Fe—B based permanent magnets are employed today in various fields.\n\n[0003]However, since rare earth metal-based permanent magnets contain a highly reactive rare earth element: R, they are apt to be oxidized and corroded in ambient, and in case they are used without applying any surface treatment, corrosion tends to proceed from the surface in the presence of small acidic or alkaline substance or water to generate rust, and this brings about the degradation and the fluctuation in magnetic properties. Moreover, in case such a rusty magnet is embedded in a magnetic circuit and a like device, there is fear of scattering rust as to contaminate peripheral components.\n\n[0004]Although there are numerous methods for imparting corrosion-resistance to rare earth metal-based permanent magnets, known is a method for forming a corrosion-resistant film using a silicon compound as the starting raw material on the surface of the rare earth metal-based permanent magnet. Recently, various studies are being made with an aim to further improve the performance of such corrosion-resistant films.\n\n[0005]For instance, in Japanese Patent Laid-Open No. 2000-182813 (Patent literature 1) is proposed a method comprising coating the surface of the rare earth metal-based permanent magnet with a treating solution comprising an aqueous solution of alkali silicate having dispersed therein fine zinc particles, and then applying a heat treatment thereto to obtain a corrosion-resistant film containing fine zinc particles dispersed therein. This method utilizes the anti-corrosive function of the film using alkali silicate as the starting raw material and the sacrificial anti-corrosive function of the fine zinc particles that is potentially base, and is expected as a method capable of imparting high corrosion resistance to the rare earth metal-based permanent magnets. However, in order to form the corrosion-resistant film containing fine zinc particles dispersed therein, this method requires the treating solution to be kept alkaline in order to maintain the fine zinc particles uniformly dispersed in the treating solution; thus, in case the treating solution is applied to the surface of the rare earth metal-based permanent magnet, hydroxides of the metal which constitutes the magnet generate on the surface of the magnet, and, due to the layer comprising such metal hydroxides covering the surface of the magnet, there occur problems such as a difficulty in forming a corrosion-resistant film containing fine zinc particles dispersed therein with high adhesive strength, a tendency in generating cracks due to the poor flexibility of the film using alkali silicate as the starting raw material, a troublesome waste liquid treatment, and the like.\n\n[0006]Further, in Japanese Patent Laid-Open No. 2001-143949 (Patent literature 2) is proposed a method comprising coating the surface of the rare earth metal-based permanent magnet with a treating solution containing silico-organic compound and inorganic fine particles having an average particle diameter of 1 nm to 100 nm, and then applying a heat treatment thereto to obtain a corrosion-resistant film containing fine inorganic particles dispersed therein. This method is proposed in order to form a thin and dense corrosion-resistant film on the surface of the rare earth metal-based permanent magnet using a silico-organic compound as the starting raw material; the internal stress inside the film which forms during the process of the film formation can be relaxed by dispersing fine inorganic particles having the specified average particle diameter in the film component, and hence, the generation of physical defects such as cracks can be thereby prevented from occurring. This method is also expected as a method capable of imparting high corrosion resistance to the rare earth metal-based permanent magnets. However, by taking into consideration that it is difficult to uniformly disperse fine inorganic particles in the order of nanometer size in water, it is necessary for preparing a treating solution to use an organic solvent such as lower alcohol and the like as the main component with a small amount of water added therein, and to prepare a sol solution by subjecting silico-organic compound to a hydrolysis polymerization reaction under an acidic condition while simultaneously dispersing fine inorganic particles. Since the thus prepared treating solution is acidic, in case the treating solution is applied to the surface of the rare earth metal-based permanent magnet, there occur problems such as inducing corrosion of the magnet, or causing the fluctuation in the composition of the treating solution due to the volatilization of the organic solvent; furthermore, there are problems such as causing unfavorable influences to the environment, or requiring a troublesome waste solution treatment.\n\n[0007]Accordingly, the objectives of the present invention are to provide a stable and simple method for producing a rare earth metal-based permanent magnet having on the surface thereof a corrosion-resistant film containing fine zinc particles dispersed therein, a corrosion-resistant rare earth metal-based permanent magnet produced by the method, a dip spin coating method being suitable for forming a coating film on thin type work pieces having various shapes, and a method for forming a coating film on a work piece.\n\nDISCLOSURE OF THE INVENTION\n\n[0008]The present invention has been accomplished in the light of the aforementioned points above, according to a first aspect and feature of the present invention, there is provided a method for producing a corrosion-resistant rare earth metal-based permanent magnet, characterized in that it comprises providing an aqueous treating fluid, which contains a hydrolysis polymerization product of alkyl silicate and fine zinc particles having an average particle diameter of 1 μm to 50 μm and has a pH value of 6 to 8 and a viscosity of 1000 cP or less, applying the fluid on the surface of a rare earth metal-based permanent magnet, and subjecting the resultant magnet to a heat treatment at 250° C. to 400° C., to thereby form a corrosion-resistant film containing fine zinc particles dispersed therein.\n\n[0009]According to a second aspect and feature of the present invention, in addition to the first feature, the fine zinc particles are flaky particles.\n\n[0010]According to a third aspect and feature of the present invention, in addition to the first feature, the total content of alkyl silicate as the starting raw material and fine zinc particles in the aqueous treating fluid accounts for 40 wt. % to 90 wt. % (where alkyl silicate content is converted to SiO2 content).\n\n[0011]According to a fourth aspect and feature of the present invention, in addition to the first feature, the mixing ratio of alkyl silicate as the starting raw material and fine zinc particles in the aqueous treating fluid is 1:1 to 1:19 (in weight ratio: where alkyl silicate content is converted to SiO2 content).\n\n[0012]According to a fifth aspect and feature of the present invention, in addition to the first feature, an organic dispersing agent is added in the aqueous treating fluid.\n\n[0013]According to a sixth aspect and feature of the present invention, in addition to the first feature, the film thickness of the corrosion-resistant film containing fine zinc particles dispersed therein is 1 μm to 50 μm.\n\n[0014]According to a seventh aspect and feature of the present invention, in addition to the first feature, other fine inorganic particles are additionally dispersed in the corrosion-resistant film containing fine zinc particles dispersed therein.\n\n[0015]According to an eighth aspect and feature of the present invention, in addition to the first feature, the aqueous treating fluid is applied to the surface of the rare earth metal-based permanent magnet by a dip spin coating method.\n\n[0016]According to a ninth aspect and feature of the present invention, in addition to the eighth feature, the method is carried out by using an aqueous treating fluid having a viscosity of 300 cP to 600 cP.\n\n[0017]According to a tenth aspect and feature of the present invention, in addition to the eighth feature, the dip spin coating is carried out by supporting plural rare earth metal-based permanent magnets on approximately the outer peripheral edge portion of a turn table which is rotatable around a vertical center axis that is used as the axis of rotation, immersion coating the rare earth metal-based permanent magnets with the aqueous treating fluid by immersing the turn table having the rare earth metal-based permanent magnets supported thereon in an aqueous treating fluid tank, and after taking out the resulting turn table from the liquid, rotating the turn table to centrifugally cut off the aqueous treating fluid that has adhered in excess to the rare earth metal-based permanent magnets.\n\n[0018]According to an eleventh aspect and feature of the present invention, in addition to the tenth feature, the plural rare earth metal-based permanent magnets are supported in approximately a ring-like arrangement on approximately the outer peripheral edge portion of the turn table.\n\n[0019]According to a twelfth aspect and feature of the present invention, in addition to the tenth feature, the rare earth metal-based permanent magnets are thin type magnets.\n\n[0020]According to a thirteenth aspect and feature of the present invention, in addition to the twelfth feature, the thin type magnets are supported in such a manner that the widest plane of the thin type magnet is disposed approximately in parallel with the radial direction of the turn table.\n\n[0021]According to a fourteenth aspect and feature of the present invention, in addition to the thirteenth feature, a coating jig is used as such that in case of attaching it on approximately the outer peripheral edge portion of the turn table, each of the thin type magnets is set apart from each other with the widest plane thereof being placed approximately in parallel with the radial direction of the turn table and in approximately a ring-like arrangement.\n\n[0022]According to a fifteenth aspect and feature of the present invention, in addition to the twelfth feature, the thin type magnets are shaped in one of the shapes selected from planar, ring-like, and arc-like shape.\n\n[0023]According to a sixteenth aspect and feature of the present invention, in addition to the fourteenth feature, after completion of a dip spin coating, the coating jig is detached from the turn table while leaving the thin type magnets still set thereon, and the thin type magnets still set on the coating jig are subjected to a heat treatment at an arbitrary place.\n\n[0024]According to a seventeenth aspect and feature of the present invention, there is provided a rare earth metal-based permanent magnet, characterized by having on the surface thereof a corrosion-resistant film containing fine zinc particles having an average particle diameter of 1 μm to 50 μm being dispersed in the film component using alkyl silicate as the starting raw material.\n\n[0025]According to an eighteenth aspect and feature of the present invention, in addition to the seventeenth feature, the corrosion-resistant film contains 50 wt. % to 95 wt. % of fine zinc particles.\n\n[0026]According to a nineteenth aspect and feature of the present invention, in addition to the seventeenth feature, zinc is diffused from the surface of the magnet body to the internal part.\n\n[0027]According to a twentieth aspect and feature of the present invention, in addition to the seventeenth feature, it is produced by the production method according to the first feature.\n\n[0028]According to a twenty-first aspect and feature of the present invention, there is provided a dip spin coating method for work pieces, characterized in that it comprises supporting plural work pieces on approximately the outer peripheral edge portion of a turn table which is rotatable around a vertical center axis that is used as the axis of rotation, immersion coating the work pieces with a paint by immersing the turn table having the work pieces supported thereon in a paint tank, and after taking out the resulting turn table from the liquid, rotating the turn table to centrifugally cut off the paint that has adhered in excess to the work pieces.\n\n[0029]According to a twenty-second aspect and feature of the present invention, there is provided a method for forming a coating film on a work piece, characterized in that it comprises, a coating jig is used as such that in case of attaching it on approximately the outer peripheral edge portion of a turn table which is rotatable around a vertical center axis that is used as the axis of rotation, each of work pieces is set apart from each other in approximately a ring-like arrangement, and it further comprises immersion coating the work pieces with a paint by immersing the turn table on which the coating jig having the work pieces set thereon is attached in a paint tank; taking out the resulting turn table from the liquid and rotating the turn table to centrifugally cut off the paint that has adhered in excess to the work pieces; detaching, from the turn table, the coating jig having the work pieces still set thereon; and if desired, subjecting the work pieces still set on the coating jig to a dry treatment at an arbitrary place.\n\n[0030]Thus, in accordance with the present invention, there are provided a stable and simple method for producing a rare earth metal-based permanent magnet having on the surface thereof a corrosion-resistant film containing fine zinc particles dispersed therein, a corrosion-resistant rare earth metal-based permanent magnet produced by the method, a dip spin coating method being suitable for forming a coating film on thin type work pieces having various shapes, and a method for forming a coating film on a work piece.\n\nBRIEF DESCRIPTION OF THE DRAWINGS\n\n[0031]FIG. 1 is a schematic process flow diagram showing an example of a dip spin coating method for a work piece according to the present invention;\n\n[0032]FIG. 2 is a schematic diagram showing an example of a state in which plural planar work pieces are supported on approximately the outer peripheral edge portion of a turn table according to the present invention;\n\n[0033]FIG. 3 is a schematic diagram showing an example of a state in which plural ring-shaped work pieces are supported on approximately the outer peripheral edge portion of a turn table according to the present invention;\n\n[0034]FIG. 4 is a schematic oblique view of an example of a coating jig according to the present invention;\n\n[0035]FIG. 5 is a schematic diagram showing a coating jig having plural planar work pieces set thereon according to the present invention;\n\n[0036]FIG. 6 is a schematic diagram showing an example of a state in which a coating jig having plural planar work pieces set thereon is attached on approximately the outer peripheral edge portion of a turn table according to the present invention;\n\n[0037]FIG. 7 is a secondary electron image obtained by EPMA in Example 4;\n\n[0038]FIG. 8 is an X-ray image of zinc obtained in the same example; and\n\n[0039]FIG. 9 is an X-ray image of iron obtained in the same example.\n\nBEST MODE FOR CARRYING OUT THE INVENTION\n\n[0040]In the present invention, a corrosion-resistant film containing fine zinc particles dispersed therein is formed by applying an aqueous treating fluid which contains a hydrolysis polymerization product of alkyl silicate and fine zinc particles having an average particle diameter of 1 μm to 50 μm and has a pH value of 6 to 8 and a viscosity of 1000 cP or less on the surface of a rare earth metal-based permanent magnet, followed by then subjecting the resultant magnet to a heat treatment at 250° C. to 400° C. The thus formed corrosion-resistant film containing fine zinc particles dispersed therein not only imparts high corrosion resistance to the rare earth metal-based permanent magnet, but also has high adhesive strength because zinc is internally diffused from the surface of the magnet body.\n\n[0041]Alkyl silicates used herein are such expressed by the general formula: SinO(n−1)(OR)(2n+2). In the formula, R represents an alkyl group exemplified by lower alkyl groups having 1 to 4 carbon atoms, such as methyl group, ethyl group, propyl group, butyl group, and the like, but suitable among them is ethyl group (i.e., ethyl silicate) because it not only is inexpensive, but also is nontoxic and has superior handling properties. Furthermore, n represents 1 or higher integer, however, in order to form a dense film, n preferably is an integer of 10 or lower.\n\n[0042]Further, fine zinc particles having an average particle diameter of 1 μm to 50 μm are used. This is because, if the average particle diameter is smaller than 1 μm, it is feared that the fine zinc particles undergo secondary aggregation in the aqueous treating fluid; on the other hand, if the average particle diameter is larger than 50 μm, it is feared that the fine zinc particles sediment in the aqueous treating fluid; in either case, there is fear of making it difficult to prepare an aqueous treating fluid which contains fine zinc particles uniformly dispersed therein and which have excellent preservation stability. The average particle diameter of the fine zinc particles is preferably 2 μm to 30 μm, and more preferably, 5 μm to 20 μm. The fine zinc particles may be of any shape, but to minimize the generation of pinholes in the corrosion-resistant film containing fine zinc particles dispersed therein, it is advantageous if the fine zinc particles are densely laminated and packed in the component of the film; furthermore, in order to diffuse zinc from the surface of the magnet body to the internal part, it is advantageous if the fine zinc particles have a larger contact area with respect to the magnet body. Accordingly, from the above points of view, fine zinc particles are preferably flaky particles. In case fine zinc particles are flaky particles, the average particle diameter means the average major diameter.\n\n[0043]The total content of alkyl silicate as the starting raw material and fine zinc particles in the aqueous treating fluid is preferably 40 wt. % to 90 wt. % (where alkyl silicate content is converted to SiO2 content), and more preferably, 60 wt. % to 80 wt. %. If the total content should be lower than 40 wt. %, it is feared that the total process steps would be increased to more than those necessary in obtaining a corrosion-resistant film containing fine zinc particles dispersed therein at a film thickness capable of exhibiting sufficiently properties; on the other hand, if the total content should be higher than 90 wt. %, it is feared that the preservation stability of the aqueous treating fluid would be affected.\n\n[0044]The mixing ratio of alkyl silicate as the starting raw material and fine zinc particles in the aqueous treating fluid is preferably 1:1 to 1:19 (in weight ratio: where alkyl silicate content is converted to SiO2 content), and more preferably, 1:3 to 1:10, such that the content of the fine zinc particles should account for 50 wt. % to 95 wt. % of the corrosion-resistant film containing fine zinc particles dispersed therein. If the content of the fine zinc particles in the resulting -corrosion-resistant film containing fine zinc particles dispersed therein should be lower than 50 wt. %, it is feared that the effect of dispersing fine zinc particles in the film component would not be sufficiently exhibited; on the other hand, if it should be higher than 95 wt. %, it is feared that the main properties as the corrosion-resistant film using alkyl silicate as the starting raw material would not be fully exhibited.\n\n[0045]The pH value of the aqueous treating fluid to be applied to the surface of the rare earth metal-based permanent magnet is restricted in a range of 6 to 8, because if the pH value should be lower than 6, as described in the patent literature 2 above, there is fear of bringing about corrosion of the rare earth metal-based permanent magnet; on the other hand, if the pH value should be higher than 8, as described in the patent literature 1 above, it is feared that no corrosion-resistant film containing fine zinc particles dispersed therein would be formed with high adhesive strength.\n\n[0046]The viscosity of the aqueous treating fluid to be applied to the surface of the rare earth metal-based permanent magnet is restricted to 1000 cP or less, because if the viscosity of the aqueous treating fluid should exceed 1000 cP, it is feared that it becomes difficult to form a corrosion-resistant film containing fine zinc particles dispersed therein and having an uniform film thickness.\n\n[0047]An aqueous treating fluid having excellent homogeneity can be prepared, preferably, for example, by adding fine zinc particles having an average particle diameter of 1 μm to 50 μm into an aqueous solution obtained by subjecting alkyl silicate to a hydrolysis polymerization reaction under an acidic condition (at a pH value of ca. 3 to 4) or under an alkaline condition (at a pH value of ca. 10 to 12), adjusting the pH value in a range of 6 to 8 and maintaining or adjusting the viscosity to 100 cP or less (the viscosity is, more preferably, 50 cP or less and further preferably, 25 cP or less). In case alkyl silicate is subjected to a hydrolysis polymerization reaction under an acidic condition, the pH value is adjusted, for instance, by using sodium hydroxide and the like. In case alkyl silicate is subjected to a hydrolysis polymerization reaction under an alkaline condition, the pH value is adjusted, for instance, by using hydrochloric acid and the like.\n\n[0048]In order to form a dense film, alkyl silicate is subjected to a hydrolysis polymerization reaction at the stage of preparing the aqueous treating fluid. The hydrolysis polymerization reaction of alkyl silicate need not be such capable of completing the hydrolysis polymerization reaction on the entire alkyl silicate, but an embodiment as such in which a part of alkyl silicate undergoes the hydrolysis polymerization reaction is sufficient. The degree of the hydrolysis polymerization reaction can be adjusted by controlling the amount of added acid or base, or by controlling the amount of water used as the medium in carrying out the hydrolysis polymerization reaction. If the degree of the hydrolysis polymerization reaction of alkyl silicate is high, there may be a case in which the viscosity of the aqueous solution exceeds 100 cP. Even in case the viscosity should once exceed 100 cP, the viscosity can be lowered by adding warm water and the like; however, in order to achieve an aqueous treating fluid with higher homogeneity, it is preferred to properly take means, such as adding water and the like, for preventing the viscosity from exceeding 100 cP in case the viscosity of the aqueous solution tends to exceed 100 cP during the hydrolysis polymerization reaction. Furthermore, in case it is desired to control the surface tension of the aqueous treating fluid in an appropriate value or the like with an objective of increasing ease in forming a film with the desired film thickness, for instance, a cellulose-based thickener (for example, a water-soluble cellulose ether exemplified by hydroxyethyl cellulose, methyl cellulose, methyl hydroxypropyl cellulose, ethyl hydroxyethyl cellulose, methyl ethyl cellulose, and so on) and the like, maybe added in the aqueous treating fluid to adjust the viscosity thereof. In case the viscosity of the aqueous treating fluid is desired to be set to 100 cP or higher with an objective of increasing the thickness of the film to be formed, etc., it is preferred that a thickener is added into an once prepared aqueous treating fluid to increase the viscosity.\n\n[0049]In case fine zinc particles are added into an aqueous solution obtained by subjecting alkyl silicate to a hydrolysis polymerization reaction, it is preferred to uniformly disperse the fine zinc particles in the aqueous treating fluid using an organic dispersing agent. The organic dispersing agent can be added into the aqueous treating fluid, for instance, by feeding fine zinc particles into water having added therein the organic dispersing agent, thereby preparing a fine zinc particles dispersed aqueous medium containing fine zinc particles uniformly dispersed therein, and then mixing the fine zinc particles dispersed aqueous medium with the aqueous solution obtained by subjecting alkyl silicate to a hydrolysis polymerization reaction. As the organic dispersing agent, preferably used from the viewpoint of affinity with fine zinc particles and cost are an anionic dispersing agent (for example, an aliphatic polycarboxylic acid, a salt ofpolyether polyester carboxylic acid, a salt of high molecular polyester acid polyamine, a salt of high molecular polycarboxylic acid long chain amine, etc.), a nonionic dispersing agent (for example, a carboxylic acid salt, a sulfonic acid salt, or an ammonium salt of polyoxyethylene alkyl ether or sorbitan ester, etc.), a high molecular dispersing agent (for example, a carboxylic acid salt, a sulfonic acid salt, or an ammonium salt of water-soluble epoxy, a styrene-acrylic acid copolymer, a glue, etc.), and the like.\n\n[0050]Further, in order to form a corrosion-resistant film containing fine zinc particles dispersed therein at a film thickness capable of exhibiting sufficiently high properties without repeating the production process in excess, the viscosity of the aqueous treating fluid to be applied on the surface of the rare earth metal-based permanent magnet is preferably 5 cP or higher.\n\n[0051]On applying the aqueous treating fluid on the surface of the rare earth metal-based permanent magnet, applicable are a dip coating method, a spray method, a spin coating method, a dip spin coating method, and the like. Furthermore, in order to improve the adhesive strength of the corrosion-resistant film containing fine zinc particles dispersed therein, which is formed on the surface of the rare earth metal-based permanent magnet, a sand blasting treatment or a pickling treatment may be applied to the surface of the magnet before coating the aqueous treating fluid thereon.\n\n[0052]In order to form a coating film of aqueous treating fluid with further improved uniformity, the aqueous treating fluid is preferably applied to the surface of the rare earth metal-based permanent magnet by a dip spin coating method. In particular, a dip spin coating is preferably carried out by supporting plural rare earth metal-based permanent magnets on approximately the outer peripheral edge portion of a turn table which is rotatable around a vertical center axis that is used as the axis of rotation, immersion coating the rare earth metal-based permanent magnets with the aqueous treating fluid by immersing the turn table having the rare earth metal-based permanent magnets supported thereon in an aqueous treating fluid tank, and after taking out the resulting turn table from the liquid, rotating the turn table to centrifugally cut off the aqueous treating fluid that has adhered in excess to the rare earth metal-based permanent magnets.\n\n[0053]As a method for forming a thin coating film on the surface of a thin type work piece at a film thickness of, for example, about 10 μm, there is sometimes employed a dip spin coating method, which comprises immersion coating the work piece with a paint by immersing the work piece in a paint tank, and after taking out the resulting work piece from the liquid, rotating it at high speed to cut off the paint that has adhered in excess to the work piece. As a dip spin coating method for thin type work pieces known in the art, for instance, there can be mentioned a method for coating an optical disk with a protective film proposed in Japanese Patent Laid-Open No. 201088/1995. This method comprises vertically setting plural substrates at a predetermined interval on the horizontal main shaft; immersing the substrates, except for the central portion, in the protective film material while rotating them at low speed around the main shaft to thereby coat the substrates with the material; drawing out the resulting product from the material; and finally, cutting off the material by high speed rotation. Furthermore, in Japanese Patent Laid-Open No. 86271/1991 is proposed a dip spin coating method characterized by that it comprises a step of centrifugally cutting off the paint, which is applied to the object to be coated that is in a state supported by a hanger in such a manner that the coating plane (flat plane) is set approximately horizontally, in which whole body inclusive of the hanger and the object to be coated is rotated around the axis of rotation set to the plumb line passing through the center of gravity of the whole body. Further, in Japanese Patent Laid-Open No. 2000-164556 is proposed a method comprising using a wafer carrier, in which a pair of supporting members having plural grooves thereon are set in such a manner that the side having the grooves thereon may be disposed faced to each other; the wafers are supported by their peripheral part with the facing grooves of the wafer carrier, and the liquid is centrifugally cut off from the plural wafers supported on the carrier by rotating the carrier in such a manner that the grooves may be faced approximately in the accelerating direction of rotation, and is dried.\n\n[0054]In case a dip spin coating method is employed to a large number of thin type work pieces, it is preferred that an uniform coating is realized for all of the work pieces irrespective of the shape of the work pieces and without causing the fluctuation in the film thickness. However, in the light of such circumstances, all the methods described in the patent literatures above have disadvantages. More specifically, the method described in Japanese Patent Laid-Open No. 201088/1995 requires holding the work pieces by the center portion; accordingly, the method is disadvantageous in that it is only applicable to ring-shaped work pieces. Furthermore, this method comprises rotating the work pieces themselves by the friction force generated by bringing the horizontal main shaft in contact with the inner peripheral plane of the ring-shaped work pieces; accordingly, this method has a shortcoming as such that, if the friction force between the work pieces and the main shaft fluctuates, the rotation speed of the work pieces fluctuates, and it is thereby feared that an uniform coating for all of the work pieces cannot be realized. Moreover, since it is difficult to rotate the work pieces at high speed, this method also suffers another shortcoming as such that the paint adhered in excess cannot be sufficiently cut off in case a paint with high viscosity (for instance, such having a viscosity exceeding 500 cP) is applied to the surface of the work pieces. Further, in the method described in Japanese Patent Laid-Open No. 86271/1991, the flat planes of the work pieces are held approximately horizontally; accordingly, the method is disadvantageous in that there is fear of causing difference in the amount of the paint adhered to the upper and the lower planes. Furthermore, in the method described in Japanese Patent Laid-Open No. 2000-164556, the work pieces are supported in such a manner that one of the flat planes is disposed opposed to the axis of rotation; hence, the rotation speed is different for each work piece depending on the holding place. Accordingly, this method has a disadvantage as such that an uniform coating for all of the work pieces cannot be realized.\n\n[0055]However, the dip spin coating method proposed in the present invention enables mass production of', '技术领域 \n\n [0001] 本发明涉及一种稳定而简单的稀土金属类永磁体的制造方法,该稀土金属类永磁体在其表面上具有分散有细锌颗粒的耐蚀膜,其通过以下方法制备: 该方法,适用于在具有各种形状的薄型工件上形成涂膜的浸涂法以及在工件上形成涂膜的方法。 \n\n 背景技术 \n\n [0002] 稀土金属永磁体,例如以Nd-Fe-B永磁体为代表的R-Fe-B永磁体,或以Sm-Fe-N永磁体为代表的R-Fe-N永磁体 磁体等利用资源丰富且廉价的磁性材料,并且具有高磁性能,特别是在其中,基于R-Fe-B的永磁体目前在各个领域中使用。 \n\n [0003] 然而,由于稀土金属基永磁体包含高反应性稀土元素:R,它们易于在环境中被氧化和腐蚀,并且如果在未进行任何表面处理的情况下使用它们,则腐蚀倾向于从表面进行 在少量的酸性或碱性物质或水的存在下会生锈,这会导致磁性能的下降和波动。 此外,在将这种生锈的磁铁埋入磁路等的情况下,担心会散布生锈而污染周边部件。 \n\n [0004] 赋予稀土类金属永磁体耐蚀性的方法很多,但已知有一种以硅化合物为原料在稀土类金属永磁体的表面上形成耐蚀膜的方法。 磁铁。 近来,为了进一步改善这种耐腐蚀膜的性能而进行了各种研究。 \n\n [0005] 例如,在日本专利特开2000-182813号公报(专利文献1)中提出了一种方法,该方法包括用包含分散在其中的碱金属硅酸盐水溶液的处理溶液涂覆稀土金属基永磁体的表面。 细的锌颗粒,然后对其进行热处理,以获得包含分散在其中的细的锌颗粒的耐腐蚀膜。 该方法利用以碱金属硅酸盐为起始原料的膜的防腐蚀功能和潜在的碱锌细颗粒的牺牲性防腐蚀功能,并且有望作为一种能够赋予金属高耐腐蚀性的方法。 稀土金属基永磁体。 然而,为了形成其中分散有锌细颗粒的耐腐蚀膜,该方法需要将处理溶液保持碱性,以保持锌细颗粒均匀地分散在处理溶液中。 因此,如果将处理溶液施加到稀土金属基永磁体的表面上,则构成磁体的金属的氢氧化物在磁体的表面上产生,并且由于包含此类金属氢氧化物的层覆盖了磁体表面。 在磁铁的表面上,会出现诸如难以形成包含分散有高粘附强度的细锌颗粒的耐腐蚀膜,由于使用碱金属硅酸盐作为起始原料的膜的柔韧性差而产生裂纹的趋势等问题。 材料,麻烦的废液处理等。 \n\n [0006] 此外,在日本特开2001-143949号公报(专利文献2)中提出了一种方法,该方法包括用含有硅有机化合物和具有以下特征的无机细颗粒的处理溶液涂覆稀土金属基永磁体的表面。 将平均粒径设为1nm至100nm,然后对其进行热处理以获得包含分散在其中的无机细颗粒的耐腐蚀膜。 提出该方法是为了以硅有机化合物为原料在稀土类永磁体的表面形成致密且薄的耐蚀膜。 通过在膜成分中分散具有规定的平均粒径的无机微粒,可以缓和在膜形成过程中形成的膜内部的内部应力,因此可以防止裂纹等物理缺陷的产生。 发生。 还期望该方法为能够对稀土金属类永磁体赋予高耐腐蚀性的方法。 但是,考虑到难以将纳米级的无机细颗粒均匀地分散在水中,因此需要制备以低级醇等有机溶剂为主要成分的处理液。 在其中加入少量的水,并通过使硅有机化合物在酸性条件下进行水解聚合反应,同时分散无机细颗粒来制备溶胶溶液。 由于这样制备的处理溶液是酸性的,因此如果将处理溶液施加到稀土金属基永磁体的表面,则会出现诸如引起磁体腐蚀或引起处理成分波动的问题。 由于有机溶剂挥发而产生的溶液; 此外,还存在诸如对环境造成不利影响或需要麻烦的废液处理的问题。 \n\n [0007] 因此,本发明的目的是提供一种稳定且简单的方法,用于生产稀土金属基永磁体,该永磁体在其表面上具有分散有细锌颗粒的耐腐蚀膜,耐腐蚀稀土金属。 通过该方法制造的高密度永磁体,浸涂法适合在具有各种形状的薄型工件上形成涂膜的方法以及在工件上形成涂膜的方法。 \n\n 发明内容 \n\n [0008] 鉴于以上要点完成了本发明,根据本发明的第一方面和特征,提供了一种用于生产耐腐蚀稀土金属基永磁体的方法,其特征在于, 包括提供水性处理液,其包含硅酸烷基酯和锌细颗粒的水解聚合产物,所述锌细颗粒的平均粒径为1μm至50μm,且pH值为6至8,并且粘度为1000cP或更小, 在稀土金属基永磁体的表面上施加流体,并对所得磁体进行250℃至400℃的热处理,从而形成其中分散有锌细颗粒的耐腐蚀膜。 \n\n [0009] 根据本发明的第二方面和特征,除了第一特征之外,细锌颗粒是片状颗粒。 \n\n [0010] 根据本发明的第三方面和特征,除了第一特征之外,在水性处理液中作为起始原料的硅酸烷基酯和细锌颗粒的总含量为40重量%。  %至90 wt。  %(其中硅酸烷基酯含量转换为SiO 2  内容)。 \n\n [0011] 根据本发明的第四方面和特征,除第一特征外,作为起始原料的硅酸烷基酯与细锌颗粒在水性处理液中的混合比为1:1至1:19(以重量计)。 比例:硅酸烷基酯含量转换为SiO 2  内容)。 \n\n [0012] 根据本发明的第五方面和特征,除了第一特征之外,在水性处理液中添加有机分散剂。 \n\n [0013] 根据本发明的第六方面和特征,除第一特征外,其中分散有细锌颗粒的耐腐蚀膜的膜厚度为1μm至50μm。 \n\n [0014] 根据本发明的第七方面和特征,除了第一特征之外,其他细无机颗粒还分散在含有分散在其中的细锌颗粒的耐腐蚀膜中。 \n\n [0015] 根据本发明的第八方面和特征,除了第一特征之外,通过浸涂法将水性处理液施加到稀土金属基永磁体的表面上。 \n\n [0016] 根据本发明的第九方面和特征,除第八方面之外,该方法通过使用粘度为300cP至600cP的水性处理液来进行。 \n\n [0017] 根据本发明的第十方面和特征,除了第八特征之外,浸涂通过在旋转的转台的大致外周边缘部分上支撑多个稀土金属基永磁体来进行。 围绕用作旋转轴的垂直中心轴,通过将其上支撑有稀土金属基永磁体的转台浸入含水处理液中,将含水金属处理液浸入稀土金属基永磁体。 储罐,然后从液体中取出转盘,旋转转盘以离心分离掉附着在稀土金属基永磁体上的水处理液。 \n\n [0018] 根据本发明的第十一方面和特征,除了第十特征之外,多个稀土金属基永磁体以近似环状的方式支撑在转台的大致外周边缘部分上。 \n\n [0019] 根据本发明的第十二方面和特征,除了第十特征之外,稀土金属基永磁体是薄型磁体。 \n\n [0020] 根据本发明的第十三方面和特征,除了第十二特征之外,还以如下方式支撑薄型磁体:薄型磁体的最宽平面大致平行于匝的径向布置。 表。 \n\n [0021] 根据本发明的第十四方面和特征,除了第十三特征之外,还使用涂覆夹具,使得在将其附接到转台的大约外周边缘部分的情况下,每个薄型磁体 它们的最宽平面被设置成彼此分开,其最宽平面大致平行于转台的径向并呈环形布置。 \n\n [0022] 根据本发明的第十五方面和特征,除了第十二特征之外,薄型磁体被成形为选自平面,环形和弧形的形状中的一种。 \n\n [0023] 根据本发明的第十六方面和特征,除了第十四特征之外,在浸涂完成后,将涂覆夹具从转台上取下,同时保持薄型磁体和薄型磁体在其上。 仍然放置在涂层夹具上的磁铁在任意位置进行热处理。 \n\n [0024] 根据本发明的第十七方面和特征,提供了一种稀土金属基永磁体,其特征在于在其表面上具有包含平均粒径为1μm至50μm的细锌颗粒的耐腐蚀膜。 以硅酸烷基酯为起始原料,将μm分散在膜成分中。 \n\n [0025] 根据本发明的第十八方面和特征,除所述第十七特征外,所述耐腐蚀膜还包含50重量%的耐蚀性膜。  %至95 wt。 锌细颗粒的百分比。 \n\n [0026] 根据本发明的第十九方面和特征,除了第十七特征之外,锌还从磁体的表面扩散到内部。 \n\n [0027] 根据本发明的第二十个方面和特征,除了第十七个特征之外,其还通过根据第一特征的制造方法来制造。 \n\n [0028] 根据本发明的第二十一方面和特征,提供了一种用于工件的浸涂法,其特征在于,该方法包括将多个工件支撑在可绕其旋转的转台的大致外周边缘部分上。 将垂直的中心轴用作旋转轴,将其上支撑有工件的转盘浸入油漆罐中,然后将其从液体中取出,然后旋转,从而将涂料浸入工件中,并进行旋转。 转盘用于离心切割掉粘附在工件上的油漆。 \n\n [0029] 根据本发明的第二十二个方面和特征,提供了一种在工件上形成涂膜的方法,其特征在于,该方法包括:使用涂装夹具,以便在将其附着在大约 转台的外周边缘部可绕用作旋转轴的竖直中心轴旋转,每个工件以近似环形的方式彼此分开设置,并且还包括浸没涂层 通过将其上放置有放置有工件的涂覆夹具的转台浸入油漆罐中,将具有油漆的工件浸入油漆罐中; 从液体中取出所得的转盘,并旋转转盘以离心分离掉过量粘附在工件上的涂料。 从转盘上卸下仍放置有工件的涂覆夹具; 如果需要,对仍放置在涂布夹具上的工件进行任意位置的干燥处理。 \n\n [0030] 因此,根据本发明,提供了一种稳定且简单的方法,用于生产稀土金属基永磁体,在其表面上具有分散在其中的细锌颗粒的耐腐蚀膜,耐腐蚀稀土。 通过该方法制造的金属基永磁体,适合在具有各种形状的薄型工件上形成涂膜的浸涂法和在工件上形成涂膜的方法。 \n\n 附图的简要说明 \n\n [0031] 图。 附图说明图1是表示本发明的工件的浸涂法的一例的概略工艺流程图。 \n\n [0032] 图。 图2是表示在本发明的转台的大致外周缘部上支承有多个平面工件的状态的一例的示意图。 \n\n [0033] 图。 图3是表示在本发明的转台的大致外周缘部上支承有多个环状的工件的状态的一例的示意图。 \n\n [0034] 图。 图4是本发明的涂布夹具的一例的示意立体图。 \n\n [0035] 图。 图5是示出根据本发明的在其上设置有多个平面工件的涂覆夹具的示意图; \n\n [0036] 图。 图6是表示在本发明的转台的大致外周缘部上安装有设置有多个平面工件的涂布夹具的状态的一例的示意图。 \n\n [0037] 图。 图7是实施例4中由EPMA获得的二次电子图像。 \n\n [0038] 图。 图8是在同一实施例中得到的锌的X射线图像。 和 \n\n [0039] 图。 图9是在相同示例中获得的铁的X射线图像。 \n\n 实施本发明的最佳模式 \n\n [0040] 在本发明中,通过涂布包含硅酸烷基酯和平均粒径为1μm以上且50μm以下的锌微粒的水解聚合产物的水性处理液,来形成分散有锌微粒的耐蚀膜。 在稀土金属基永磁体的表面上的pH值为6至8且粘度为1000cP以下,然后对所得的磁体在250℃至400℃下进行热处理。 这样形成的含有分散的锌细颗粒的耐腐蚀膜不仅赋予稀土类金属永磁体高的耐腐蚀性,而且由于锌从磁体主体的表面内部扩散而具有高的粘合强度。 \n\n [0041] 本文所用的烷基硅酸盐用通式Si表示。 n Ø (n-1) (要么) (2n+2) 。 式中,R表示以甲基,乙基,丙基,丁基等碳原子数为1〜4的低级烷基为代表的烷基,其中合适的是乙基(乙基)。 硅酸盐),因为它不仅价格便宜,而且无毒且具有出色的处理性能。 此外,n表示1以上的整数,但是,为了形成致密的膜,n优选为10以下的整数。 \n\n [0042] 此外,使用具有1μm至50μm的平均粒径的细锌颗粒。 这是因为,如果平均粒径小于1μm,则担心锌微粒在水性处理液中发生二次凝集。 另一方面,如果平均粒径大于50μm,则担心细锌颗粒沉淀在水性处理液中。 在任何一种情况下,都有可能难以制备含有均匀分散在其中的细锌颗粒的水性处理液,其具有优异的保存稳定性。 锌微粒的平均粒径优选为2μm〜30μm,更优选为5μm〜20μm。 细锌颗粒可以是任何形状,但是为了使在其中分散有细锌颗粒的耐腐蚀膜中的针孔的产生最小化,如果细锌颗粒紧密地层压并堆积在膜的成分中是有利的。 此外,为了使锌从磁体的表面扩散到内部,有利的是,细的锌颗粒相对于磁体具有更大的接触面积。 因此,从上述观点出发,细锌颗粒优选为片状颗粒。 如果细的锌颗粒是片状颗粒,则平均粒径是指平均长径。 \n\n [0043] 水性处理液中作为起始原料的硅酸烷基酯和锌细颗粒的总含量优选为40重量%。  %至90 wt。  %(其中硅酸烷基酯含量转换为SiO 2  含量),更优选60 wt。  %至80 wt。  %。 如果总含量应低于40 wt。 恐怕总的工艺步骤将增加到超过获得的抗腐蚀膜所需的步骤,而该抗腐蚀膜包含以细微的锌颗粒分散在其中的锌膜,该膜厚度能够显示出足够的性能。 另一方面,如果总含量应高于90重量%。  %,担心水性处理液的保存稳定性会受到影响。 \n\n [0044] 作为起始原料的硅酸烷基酯与细锌颗粒在水性处理液中的混合比优选为1:1至1:19(重量比:其中硅酸烷基酯含量转化为SiO 2  含量,更优选为1:3至1:10,使得锌细颗粒的含量应占50重量%。  %至95 wt。  %的耐腐蚀膜含有分散在其中的细锌颗粒。 如果在所得的分散于其中的细锌颗粒的耐腐蚀膜中细锌颗粒的含量应低于50重量%。 另外,恐怕不能充分发挥将锌微粒分散在膜成分中的效果。 另一方面,如果它应该高于95重量%。 另外,恐怕不能充分发挥作为以硅酸烷基酯为原料的耐蚀膜的主要性能。 \n\n [0045] 如专利文献中所述,要施加到稀土金属基永磁体的表面的水性处理液的pH值限制在6至8的范围内,因为如果pH值应低于6, 上述2中,担心会引起稀土金属系永磁体的腐蚀。 另一方面,如上述专利文献1中所述,如果pH值应高于8,则担心不会形成具有高粘附强度的分散有细锌颗粒的耐腐蚀膜。 \n\n [0046] 施加于稀土金属类永磁体的表面的水性处理液的粘度被限制在1000cP以下,因为如果水性处理液的粘度应超过1000cP,则担心会变得 难以形成包含分散在其中的锌细颗粒并且具有均匀的膜厚度的耐腐蚀膜。 \n\n [0047] 均质性优异的水性处理液例如可以优选通过在酸性条件下将平均粒径为1μm以上且50μm以下的锌微粒添加到使硅酸烷基酯进行水解聚合反应而得的水溶液中而制备。  (在大约3至4的pH值下)或在碱性条件下(在大约10至12的pH值下),将pH值调节在6至8的范围内,并将粘度保持或调节到100 cP 以下(粘度更优选为50cP以下,进一步优选为25cP以下)。 在使硅酸烷基酯在酸性条件下进行水解聚合反应的情况下,例如通过使用氢氧化钠等来调节pH值。 如果硅酸烷基酯在碱性条件下进行水解聚合反应,则例如通过使用盐酸等来调节pH值。 \n\n [0048] 为了形成致密的膜,在制备水性处理液的阶段使硅酸烷基酯进行水解聚合反应。 硅酸烷基酯的水解聚合反应不必能够在整个硅酸烷基酯上完成水解聚合反应,但是其中一部分硅酸烷基酯进行水解聚合反应的实施方案就足够了。 水解聚合反应的程度可以通过控制添加的酸或碱的量或通过控制在进行水解聚合反应中用作介质的水的量来调节。 如果烷基硅酸盐的水解聚合反应的程度高,则可能存在水溶液的粘度超过100cP的情况。 即使粘度一旦超过100 cP,也可以通过添加温水等降低粘度。 然而,为了获得具有更高均质性的水性处理液,优选在水溶液的粘度趋于超过100的情况下适当地采取诸如添加水等的方法,以防止粘度超过100cP。 水解聚合反应过程中的cP。 此外,在期望将水性处理液的表面张力控制在适当的值等的情况下,以增加容易地形成具有期望的膜厚的膜为目的,例如,纤维素类增稠剂(用于 例如,可以在水性处理液中添加例如羟乙基纤维素,甲基纤维素,甲基羟丙基纤维素,乙基羟乙基纤维素,甲基乙基纤维素等的水溶性纤维素醚等,以调节其粘度。 为了增加所形成的膜的厚度等而期望将水性处理液的粘度设定为100cP以上的情况下,优选在一次制备的水性处理中添加增稠剂。 流体以增加粘度。 \n\n [0049] 在将锌细颗粒添加到通过使硅酸烷基酯进行水解聚合反应而获得的水溶液中的情况下,优选使用有机分散剂将锌细颗粒均匀地分散在水性处理液中。 例如,可以通过将锌细颗粒供给到其中添加有有机分散剂的水中,从而将有机分散剂添加到水性处理液中,从而制备包含均匀分散在其中的锌细颗粒的水分散锌细颗粒的水性介质,然后 将分散有细锌颗粒的水性介质与通过使硅酸烷基酯进行水解聚合反应而获得的水溶液混合。 作为有机分散剂,从与锌微粒的亲和性和成本的观点出发,优选使用阴离子分散剂(例如脂肪族多元羧酸,聚醚聚酯羧酸的盐,高分子聚酯酸聚胺的盐, 高分子多元羧酸长链胺的盐等),非离子分散剂(例如聚氧乙烯烷基醚或脱水山梨糖醇酯的羧酸盐,磺酸盐或铵盐等),高 分子分散剂(例如,水溶性环氧的羧酸盐,磺酸盐或铵盐,苯乙烯-丙烯酸共聚物,胶水等)等。 \n\n [0050] 此外,为了形成其中分散有细锌颗粒的耐腐蚀膜,该锌颗粒以能够表现出足够高的性能而不会过多地重复生产过程的膜厚分散在其中,要涂覆在金属表面上的水性处理液的粘度。 稀土金属类永磁体优选为5cP以上。 \n\n [0051] 在将水性处理液涂布在稀土金属类永磁体的表面上时,可采用浸涂法,喷涂法,旋涂法,浸涂法等。 另外,为了提高在稀土类金属永磁体的表面上形成的,分散有锌的微粒的耐蚀膜的密合强度,可以实施喷砂处理或酸洗处理。 在将水性处理液涂在磁体表面之前,先在磁体表面涂上水。 \n\n [0052] 为了形成具有进一步改善的均匀性的水性处理液的涂膜,优选通过浸涂法将水性处理液涂布在稀土金属类永磁体的表面上。 特别地,优选通过在转台的大致外周边缘部分上支撑多个稀土金属基永磁体来进行浸涂,该转台可绕用作旋转,浸没轴的垂直中心轴旋转。 通过将其上支撑有稀土金属基永磁体的转台浸入含水处理液罐中,然后用液体涂覆稀土金属基永磁体,然后将其从液体中取出,旋转 转盘用于离心分离掉附着在稀土金属基永磁体上的水性处理液。 \n\n [0053] 作为在薄型工件的表面上以例如约10μm的膜厚形成薄涂膜的方法,有时采用浸涂法,该方法包括在工件上浸渍浸涂。 将工件浸入油漆罐中,然后从液体中取出所得的工件,然后高速旋转以切除多余粘附在工件上的油漆。 作为本领域中已知的用于薄型工件的浸涂法,例如,可以提及在日本专利特开201088/1995中提出的用保护膜涂覆光盘的方法。 该方法包括在水平主轴上以预定间隔垂直放置多个基板;以及 将除中心部分以外的基板浸入保护膜材料中,同时使它们围绕主轴低速旋转,从而用材料涂覆基板; 从物料中提取出最终产品; 最后,通过高速旋转切断材料。 此外,在日本专利公开No.86271 / 1991中提出了一种浸涂法,其特征在于,它包括一个离心切掉涂料的步骤,该涂料以一种被支撑的状态被施涂到被涂物体上。 以使涂布面(平面)大致水平的方式设置在衣架上,其中包括衣架和待涂覆物体在内的整个身体围绕设置在穿过金属线中心的铅垂线的旋转轴旋转。 全身的重力。 此外,在日本特开2000-164556号公报中提出了一种方法,该方法包括使用晶片载体,其中,以在其上设置有凹槽的一侧的方式设置一对支撑构件,从而可以设置其上具有凹槽的一侧。 面对面 晶片通过其周边部分被晶片载体的面对的凹槽支撑,并且通过以这样的方式旋转载体,使得凹槽可以大致面对加速,从而从支撑在载体上的多个晶片中离心分离出液体。 旋转方向,并干燥。 \n\n [0054] 在对大量的薄型工件采用浸涂法的情况下,优选与工件的形状无关地在所有工件上均一地进行涂覆而不会引起膜的变动。 厚度。 然而,鉴于这种情况,以上专利文献中描述的所有方法均具有缺点。 更具体地,在日本特开201088/1995号公报中记载的方法中,需要将工件保持在中央部。 因此,该方法的缺点在于它仅适用于环形工件。 此外,该方法包括:通过使水平主轴与环形工件的内周面接触而产生的摩擦力使工件自身旋转; 因此,该方法具有如下缺点:如果工件与主轴之间的摩擦力波动,则工件的旋转速度波动,从而担心不能对所有工件进行均匀的涂覆。 被实现。 此外,由于难以使工件高速旋转,因此该方法还具有另一个缺点,即在具有高粘度的涂料(例如,粘度超过100℃的涂料)的情况下,过量附着的涂料不能被充分地切掉。  500 cP)施加到工件表面。 另外,在日本特开平86271/1991号公报中记载的方法中,将工件的平面大致水平地保持。 因此,该方法的缺点在于担心会引起附着在上,下平面上的涂料量的差异。 另外,在日本特开2000-164556号公报中记载的方法中,以使一个平面与旋转轴对置的方式支承工件。 因此,每个工件的旋转速度取决于保持位置。 因此,该方法的缺点在于不能为所有工件实现均匀的涂层。 \n\n [0055] 然而,本发明提出的浸涂法能够在薄型工件上大量生产均匀的涂膜而不会产生膜厚的波动。 \n\n [0056] 以下,根据需要参照附图,对本发明提出的浸涂法进行说明,但应理解,本发明提出的浸涂法决不限于以下说明。 本发明提出的浸涂法适用于任何形状的工件的涂覆,而与工件的形状无关,但是它特别适用于平面,环形和弧形的薄型工件。 形状。 因此,在下面的说明中,以将本发明的方法应用于平面工件和环状工件的涂层的情况为例进行选择。 \n\n [0057] 图。 图1是示意性工艺流程图,示出了本发明提出的浸涂法的一个例子。 下面逐步描述该过程:(a)首先,将多个平面工件X支撑在转台的大致外周边缘部分上。 2  可以绕中心轴旋转 1  设置在用作旋转轴的垂直方向上,使得每个工件X的最大宽度平面(平面)与转盘的径向大致平行放置 2  大致呈环状。  (b)然后,通过升高涂料箱,将工件X浸入涂料中。 4  使用气缸 3 ,并将其浸入转盘中 2  将工件X支撑在油漆槽中 4 。  (c)随后,转台 2  通过降低涂料箱从流体中清除 4  使用气缸 3 。  (d)最后,通过旋转转台,离心地去除附着在工件X的平面上的涂料。 2  通过使用电动机 5  绕中心轴 1 用作旋转轴(最好将旋转方向至少反转一次)。 根据该方法,即使在使用粘度较高的涂料(例如粘度超过200cP的涂料)的情况下,也可以通过以下方法自由地控制附着在工件X的平面上的涂料量。 调整转台的尺寸 2  或通过控制转速; 因此,可以自由地控制涂膜的膜厚。 \n\n [0058] 优选地,将网格平面用作转台的平面。 2 ,以使残留的涂料不会形成涂料容器。 \n\n [0059] 图。  2( a 图2是表示在旋转工作台的大致外周缘部上支承有多个平面工件X的状态的一例的示意性部分的立体图。 2  以大致环形的方式布置,其中,每个工件X的平面被设置成大致平行于径向方向。 图。  2( b )显示了转台的俯视图 2  工件X被支撑在其上。工件X被安装在两个支撑构件上。 11  转台上安装(最好是棒状,并且具有半圆形横截面) 2 。 如图1所示。 如图1所示,工件X可以直接安装在转台上 2 并且,通过采用这样的安装方法,能够使在工件X的下表面产生的安装痕迹最小化(参照图2(图2(b))。 c ))。 \n\n [0060] 使用垫片将平面工件X支撑为彼此分离的状态。 12  相对于支撑构件在垂直方向上设置 11 。 垫片 12  还起到防止工件X滚动的作用。 垫片之间的间隔 12  和一个相邻的垫片 12  优选比工件X的厚度宽; 因为,如果间隔 12  由于不断地与工件X的两侧接触,接触痕迹变得清晰。 此外,垫片的横截面 12  最好是圆形的,因为通过旋转工作台在工件X的平面上产生的接触轨迹 2  可以最小化。 \n\n [0061] 参照处理步骤(d),在通过旋转转盘将附着在平面工件X的平面上的涂料过量地离心切割f的情况下 2  绕中心轴 1  通过电动机用作旋转轴 5 ,工件X由于离心力而趋向于径向飞出,但离心飞出调节杆 13 ,固定在转台上 2  通过图中省略的构造并沿水平方向布置的结构,与工件X的外侧平面接触,并起到防止工件X向径向飞出的作用。 此外,垫片 14  相对于离心飞出调节杆沿旋转轴线方向设置 13  其功能是在离心分离油漆时调节工件X的运动。 \n\n [0062] 图。  3( a 图2是表示在旋转工作台的大致外周缘部上支承有多个环状的工件Y的状态的一例的示意立体图。 2  以大致环形的方式布置,其中,每个工件Y的平面被设置成大致平行于径向方向。 工件Y支撑在转台上 2  通过将工件Y的环部悬挂在水平钩构件上 15  固定在转台上 2  通过图中省略的构造。 水平钩件 15  优选为具有圆形横截面的杆状。 此外,优选的是,水平钩构件的一部分 15  例如,将悬挂有工件Y的工件切割成V形(见图3( b ))。 通过对水平钩构件采用这种构造 15 因此,可以使在工件Y的环部上产生的钩痕最小化。 \n\n [0063] 在对多个薄型工件进行浸涂的情况下,如图2,图3所示,各薄型工件可以直接支撑在转台上。  1至3; 但是,也可以使用涂布夹具,该涂布夹具能够将各薄型工件的最宽平面大致平行于转台的径向并大致成环状地彼此分开地设置。 在将其安装在转台的大致外周边缘部分的情况下,进行类似布置。 \n\n [0064] 图。 图4是示意性地表示在转盘的外周缘部附近安装有能够将各平面状的工件彼此分开而使其平面成为平面的涂布夹具的例子的立体图。 放置成与转台的径向大致平行,并且大致呈环状。 涂覆夹具Z至少包括两个支撑杆 21  带垫片 22 离心机与水平方向平行地布置,并且用于支撑彼此分离设置的多个平面工件X,并且以使得其平面大致平行于垂直方向的方式进行离心飞散调节 棒 23  带垫片 24 平行于水平方向布置的夹具X与工件X的外侧平面接触,并且在夹具具有夹具的情况下,起到防止工件X由于离心力而沿径向飞出的作用。 载置在其上的工件X安装在转台的大致外周缘部上,使转台旋转。 但是,它还包括在支撑杆的上侧 21 ,两个杆状构件 25  带垫片 26  与支撑杆平行布置 21 这样,多个工件X可以以适当的间隔保持与竖直方向大致平行的平面,并且在工件X的上部和支撑杆之间保持空间。 21  万一夹具颠倒过来。 支撑杆 21  用于在上级保持工件X的功能是杆状构件 25  万一夹具颠倒过来。 \n\n [0065] 图。 图5示出了其上设置有多个薄型工件X的涂覆夹具Z的示意性正视图(a)和沿线D-D(b)的截面图。 \n\n [0066] 支撑杆 21  和杆状构件 25  每个优选具有圆形横截面。 以这种方式,可以最小化在薄型工件X的下平面上产生的安装痕迹。 此外,离心飞出调节杆 23  优选具有圆形横截面。 以这种方式,可以使在薄型工件X的外侧平面上产生的接触痕迹最小化。 还有,垫片 22 ,垫片 24 和垫片 26  每个优选具有圆形横截面。 以这种方式,可以使在薄型工件X的平面上产生的接触痕迹最小化。 此外,支撑杆 21  以及杆状构件 25  不必每个都由两部分组成,并且可以只由一个组成。 \n\n [0067] 图1中所示的涂覆夹具Z可包括在模具中。 例如,如图4所示,可以如下使用。 图。 图6是表示在转台的大致外周缘部上安装有设置有多个平面工件X的涂布夹具Z的状态的一例的一部分的俯视图的示意图。 2  使用已知的可自由拆卸的固定装置。 通过将转台浸泡在工件X上来浸涂涂料 2  将其上放置有工件X的涂覆夹具Z安装在其上的涂料罐中 4 ,根据图3所示的示意性工艺流程图。  1; 即通过升高涂料罐 4  使用气缸 3 。 然后,油漆罐 4 通过使用气缸降低 3  取出转盘 2  从液体。 最后,通过旋转转台完成浸涂 2  通过使用电动机 5  绕中心轴 1  用作旋转轴,从而离心分离掉多余粘附在工件X平面上的涂料。经过任意时间后,仍在其上放置工件X的涂覆夹具Z 从转盘上拆下 2 然后,如果需要,将仍放置在涂覆夹具Z上的工件X在任意位置进行干燥处理(自然干燥或热干燥)。 然后,将仍放置有工件X的涂覆夹具Z上下颠倒并再次安装在转台上 2 ,从而以与上述相似的方法进行浸涂。 以这种方式,可以使在第二涂层中产生的安装迹线和接触迹线的位置与在第一涂层中产生的那些迹线的位置不同,并且可以将在第一涂层中产生的安装迹线和接触迹线的位置涂覆在第二涂层中 ; 因此,可以将更均匀的涂层施加到工件X上。随后,将仍放置有工件X的涂层夹具Z从转台上卸下。 2 然后,根据需要,将仍放置在涂布夹具Z上的工件X在任意位置进行干燥处理(自然干燥或热干燥)。 以这种方式,可以在大量工件上有效地形成均匀的涂膜,而不会引起膜厚的波动。 \n\n [0068] 此外,在通过浸涂法将水性处理液涂布在稀土金属类永磁体的表面上的情况下,通过使用粘度为300cP至200℃的水性处理液,可以形成更均匀的涂膜。  600 cP。 优选地,如上所述,具有这种粘度的水性处理液的粘度是通过将纤维素类增稠剂添加到曾经制备的水性处理液中而增加的(优选地,增稠剂以占1的比例添加)。 重量%至2重量%的水性处理液。 \n\n [0069] 在其表面上形成有水性处理液的涂膜的稀土金属类永磁体的热处理在250℃至400℃下进行。通过在这样的温度条件下进行热处理, 在形成膜的过程中,含水处理液中包含的锌细颗粒的一部分从磁体的表面适当地扩散到内部,并且可以形成其中分散有锌细颗粒的耐腐蚀膜。 具有高粘合强度。 如果热处理的温度低于250℃,则不仅锌的扩散不充分,而且水分残留在稀土金属类永磁体的表面上而没有充分蒸发,这是因为 因此担心这种水会导致磁铁腐蚀; 另一方面,如果热处理的温度应高于400℃,则担心锌的扩散会过度发生,从而对磁性能产生不利影响。 热处理的时间优选为例如10分钟至120分钟。 通过一次对具有以下特征的稀土金属类永磁体在100℃至170℃下进行预干燥,然后进行热处理,可以形成进一步分散有细锌粒子的均匀的耐腐蚀膜。 施加到其表面的水性处理液涂料。 \n\n [0070] 包含分散在其中的锌细颗粒的耐腐蚀膜优选以其膜厚在1μm至50μm的范围内,并且更优选在5μm至15μm的范围内的方式形成。 如果膜厚度小于1μm,则担心其中分散有包含细锌颗粒的耐腐蚀膜所必需的性能将不能充分发挥;如果膜厚小于1μm,则不能充分发挥其性能。 另一方面,如果膜厚超过50μm,则担心无法充分获得作为稀土金属类永磁体的有效体积。 \n\n [0071] 此外,其他无机细颗粒可另外分散在其中分散有锌细颗粒的耐腐蚀膜中。 作为无机细颗粒,可以提及潜在地类似于锌的碱金属的细颗粒,例如铝,锡,锰,镁,钛,镍等。 通过例如将铝微粒和锌微粒一起分散,可以有效地防止由于锌微粒的腐蚀引起的白锈(碱性碳酸锌)的产生。 此外,为了在进一步改善膜的耐腐蚀性的同时进一步减少在膜中可能产生的针孔,可以分散诸如Al的氧化物的细颗粒。 2 Ø 3 钛白粉 2 二氧化硅 2 ,云母等与薄膜中的锌细颗粒一起。 在无机细颗粒与锌细颗粒一起分散的情况下,锌细颗粒和无机细颗粒的总重量优选占95重量%。 形成的耐腐蚀膜的%或更少。 \n\n [0072] 作为稀土金属基永磁体,例如,可以提及以Nd-Fe-B基永磁体为代表的已知的R-Fe-B基永磁体和以a表示的R-Fe-N基永磁体。 基于Sm-Fe-N基永磁体,其中,从具有高磁性能和优异的批量生产性以及经济优势的观点出发,特别优选R-Fe-B基永磁体。 稀土金属基永磁体可以是烧结磁体或粘结磁体。 \n\n [0073] 稀土金属类永磁体的稀土元素(R)优选为选自Nd,Pr,Dy,Ho,Tb和Sm中的至少一种;优选为Nd。 或选自La,Ce,Gd,Er,Eu,Tm,Yb,Lu和Y中的至少一种。 \n\n [0074] 通常,上述稀土金属之一足以用作R,但是实际上,从容易获得等方面考虑,可以使用两种以上的混合物(混合金属,did和 喜欢)。 \n\n [0075] 此外,通过添加选自Al,Ti,V,Cr,Mn,Bi,Nb,Ta,Mo,W,Sb,Ge,Sn,Zr,Ni,Si,Zn,Hf和Ga中的至少一种,是 可能会提高矫顽力,消磁曲线的矩形度和生产率,或者降低成本。 另外,通过用Co代替Fe的一部分,可以在不损害磁特性的情况下提高所得磁体的温度特性。 \n\n 例子 \n\n [0076] 下面通过实施例和比较例更详细地解释本发明,但是应当理解,本发明不限于此。 \n\n 例子1 \n\n [0077] 作为起始原料,将电解铁,硼铁和钕作为R进行混合,得到预定的磁体组成,熔融铸造后,将所得产物粗粉碎,并通过机械粉碎方法进行细粉碎,得到细粉。 具有在3μm至10μm范围内的粒度。 将得到的微粉在10kOe的磁场下成型,在氩气气氛下在1100℃下烧结1小时,在600℃下进行时效处理2小时,从而获得磁体。 具有15Nd-7B-78Fe的组成,从其中切出36mm×32mm×3mm尺寸的平面烧结磁体试验片以进行以下实验。  [0078]A.含有20重量%的水溶液。 硅酸乙酯的百分比(其中硅酸乙酯的含量已转换为SiO 2  通过加入硅酸乙酯40(一种无色透明液体,含有40重量%的硅酸乙酯)来制备作为起始原料的硅酸乙酯,其中硅酸乙酯的含量被转化为二氧化硅。 2  通过用1N盐酸将其pH值调节至3使所得产物进行水解聚合反应。 将这样制备的水溶液与包含分散在其中的锌细颗粒的水性介质混合,该水介质通过添加有机分散剂(商标:Solsperse S20000:由Avecia Limited生产)和平均长径为20的薄片状锌细颗粒制备。 水中的μm(尺寸约为20μm×20μm×1μm); 充分搅拌所得产物后,用1N氢氧化钠将其pH值调节至7。 由此获得粘度为15cP并且包含硅酸乙酯作为起始原料和总含量为70wt。%的细锌颗粒的水性处理液。  %(其中硅酸乙酯含量转换为SiO 2  硅酸乙酯为起始原料,细锌颗粒和有机分散剂的混合比为9.9:90:0.1(重量比;其中硅酸乙酯的含量转换为SiO) 2  内容)。 [0079] B.将试验片在乙醇中进行超声波清洗(脱脂处理),自然干燥15分钟后,将其浸入上述水性处理液中。 从水性处理液中取出的试验片设置在离心干燥机内,以300rpm旋转30秒,将附着在试验片表面上的水性处理液切掉,并进行预干燥。 在100°C通风5分钟。 以这种方式,将经过水性处理液涂层预干燥至其表面的测试片再次浸入水性处理液中。 以与上述相同的方式去除过量粘附到从水处理液中取出的试验片的表面上的水处理液,并且在空气中在320℃下对试样进行热处理10分钟。 通过在其表面上形成水性处理液的涂膜,从而形成以细锌颗粒含量为90wt。%分散在其中的细锌颗粒形成的耐腐蚀膜。 在试件表面的百分比。 发现由此形成的包含分散在其中的细锌颗粒的耐腐蚀膜的膜厚度为约10μm(从截面观察)。[0080] C.对在这样制得的十个试样上进行了耐腐蚀性试验,该试验在35℃下喷射5%的盐水500小时,在其表面上具有分散有细锌颗粒的耐腐蚀膜,并且外观没有变化。 测试后在任何测试件上(无生锈)。 \n\n 例子2 \n\n [0081] pH值为3且含20 wt。 硅酸乙酯的百分比(其中硅酸乙酯含量转换为SiO 2  以与实施例1相同的方式制备作为起始原料的水。将如此制备的水溶液与包含细锌颗粒和分散在其中的细铝颗粒的水性介质混合,该水性介质通过添加有机分散剂( 商标:Solsperse S20000:由Avecia Limited生产),片状锌细颗粒,其平均大直径为20μm(尺寸约为20μm×20μm×1μm),细颗粒状的铝颗粒,其平均直径为3μm。 充分搅拌后,通过使用1N氢氧化钠将其pH值调节至7。 由此获得粘度为13cP并且包含硅酸乙酯作为起始原料,细锌颗粒和细铝颗粒的水处理液,其总含量为70重量%。  %(其中硅酸乙酯含量转换为SiO 2  含量),其中以硅酸乙酯为起始原料,锌细颗粒,铝细颗粒和有机分散剂的混合比例为9.9:60:30:0.1(重量比;硅酸乙酯含量为 转化为SiO 2  内容)。 所得到的含水处理液用于形成包含细锌颗粒和细铝颗粒的耐腐蚀膜,细锌颗粒含量为60wt。%,细锌颗粒分散在其中。  %和30重量%的细铝颗粒含量。 以与实施例1相同的方式,在与实施例1相同的试验片的表面上形成%。发现由此形成的包含细锌颗粒和细铝颗粒分散在其中的耐腐蚀膜的膜厚度为约10μm。  (从横截面观察)。 以与实施例1相同的方式对如此制备的十个测试片进行耐腐蚀性测试,其表面上具有分散在其中的细锌颗粒和细铝颗粒的耐腐蚀膜,并且外观没有变化(没有生锈)。 测试后的任何测试件上生成)。 \n\n 例子3 \n\n [0082] pH值为3且含20 wt。 硅酸乙酯的百分比(其中硅酸乙酯含量转换为SiO 2  以与实施例1中相同的方式制备作为起始原料的水。将如此制备的水溶液与包含细锌颗粒,细铝颗粒和细锡颗粒分散在其中的水性介质混合,通过添加 有机分散剂(商标:Solsperse S20000:由Avecia Limited生产),片状的锌细颗粒,其平均大直径为20μm(尺寸约为20μm×20μm×1μm),具有平均直径的细粒状铝颗粒。 在室温下搅拌3μm的锡颗粒和在水中具有平均直径3μm的细粒锡颗粒,并在充分搅拌所得产物后,通过使用1N氢氧化钠将其pH值调节至7。 由此获得粘度为18cP并且包含硅酸乙酯作为起始原料,细锌颗粒,细铝颗粒和细锡颗粒的水处理液,其总含量为70重量%。  %(其中硅酸乙酯含量转换为SiO 2  含量),其中以硅酸乙酯为起始原料,锌细粒,铝细粒,锡细粒和有机分散剂的混合比例为9.9:55:25:10:0.1(重量比)  ;其中硅酸乙酯含量高的地方转化为SiO 2  内容)。 所得的水性处理液用于形成包含锌细颗粒,铝细颗粒和锡细颗粒的抗腐蚀膜,其中锌细颗粒的含量为55wt。%。  %,细铝颗粒含量为25重量%。  %和细锡颗粒含量为10重量%。 以与实施例1相同的方式,在与实施例1相同的试验片的表面上以%计。发现由此形成的包含细锌颗粒,细铝颗粒和细锡颗粒的耐腐蚀膜的膜厚度。  (从横截面观察)约为10μm。 以与实施例1相同的方式对如此制备的十个测试片进行耐腐蚀性测试,其表面上具有分散在其中的细锌颗粒,细铝颗粒和细锡颗粒的耐蚀膜,未发现变化。 测试后任何测试件的外观(无生锈)。 \n\n 比较例1 \n\n  [0083]A. pH为12的碱性硅酸钠和SiO的水溶液 2 /钠 2 制备4.0的O比。 将这样制备的水溶液与包含分散在其中的锌细颗粒的水性介质混合,该水介质通过添加有机分散剂(商标:Solsperse S20000:由Avecia Limited生产)和平均长径为20的薄片状锌细颗粒而制备。 在水中加入10μm(尺寸约为20μm×20μm×1μm),并将得到的产物充分搅拌。 由此获得一种处理溶液,其包含碱性硅酸钠作为起始原料和锌细颗粒,其总含量为70重量%。  %(其中碱性硅酸钠含量转化为SiO 2  含量),其中以9.9:90:0.1的混合比例(重量比)包含碱性硅酸钠作为起始原料,细锌颗粒和有机分散剂,其中碱性硅酸钠的含量转化为SiO 2  内容)。 [0084] B.将与实施例1相同的试验片在乙醇中进行超声波洗涤(脱脂处理)并自然干燥15分钟,将其浸入上述处理液中。 从处理液中取出的试验片放入离心干燥机内,以300rpm旋转30秒,将附着在试验片表面上的过量的处理液切掉,在空气中进行预干燥。  100℃保持5分钟。 以此方式,将经过处理溶液涂层的预干燥至其表面的测试片再次浸入处理溶液中。 以与上述相同的方式去除过量粘附到从处理溶液中取出的测试件表面上的处理溶液,并且在空气中在150℃下对具有热稳定性的测试件进行30分钟的热处理。 在其表面上形成处理溶液的涂膜,从而形成包含以90wt。%的细锌颗粒含量分散在其中的细锌颗粒的耐腐蚀膜。 在试件表面的百分比。 发现由此形成的包含分散在其中的细锌颗粒的耐腐蚀膜的膜厚度为约10μm(从截面观察)。[0085] C.对所得的10片试验片进行了在35℃下喷雾5%盐水在500℃下进行了500小时的耐腐蚀性试验,在该试验片的表面具有分散有锌微粒的耐蚀膜,结果发现有7片 在200小时的时间中显示出外观变化(产生锈)。  \n\n 例子4 \n\n [0086] 通过快速凝固工艺制备由平均长径为150μm,组成为12原子%的Nd,77原子%的Fe,6原子%的B和5原子%的Co组成的合金粉末,并进行捏合 加入浓度为2 wt。  %。 将所得混合物在686 N / mm的压力下压模。 2 然后,在150℃下固化1小时,从而得到外径为30mm,内径为28mm,长度为4mm的环状的粘结磁铁试验片。 对试验片进行类似于实施例1的试验,以在其表面上形成耐腐蚀膜,该耐腐蚀膜包含分散在其中的锌细粒含量为90wt。%的锌细粒。  %。 发现由此形成的包含分散在其中的细锌颗粒的耐腐蚀膜的膜厚度为约10μm(从截面观察)。 此外,通过使用EPMA(电子探针显微分析仪; Shimadzu Corp.制造的EPM810),对在其表面上具有分散有细锌颗粒的耐腐蚀膜的试验片的表面附近的截面进行观察。  )。 在图 图7给出了二次电子图像。 在图 图8给出了锌的X射线图像。 在图 图9给出了铁的X射线图像。 从图。 由图7至图9可知,锌从试片主体的表面扩散到内部。 没有观察到由于锌扩散引起的测试件本身的磁性能下降。 对如此制成的十个试件进行了包括在35℃下将5%盐水喷洒500小时的耐腐蚀性测试,在其表面上具有分散有细锌颗粒的耐腐蚀膜,并且外观没有变化(没有)。 测试后在任何试件上都不会生锈)。 \n\n 例子5 \n\n [0087] 通过添加羟乙基纤维素作为增稠剂,将实施例1中制备的水性处理液的粘度调节为450cP,使得其占1wt。%。 水处理液的%。 将大量与实施例1相同的试验片在乙醇中进行超声波洗涤(脱脂处理)并自然干燥15分钟,将其放置在图1所示的涂布夹具上。 如图4所示,将其上放置有试验片的涂覆夹具安装在转台的大致外周边缘部分上,如图4所示。 参照图6,进行浸涂,如图3所示。 使用上述处理液,得到图1所示的溶液(以300rpm离心分离30秒)。 之后,从转台上取出放置有试验片的涂布夹具,将放置在涂布具上的试验片在130℃的空气中预干燥10分钟。 随后,对在其表面上形成有水性处理液的涂膜的试验片在350℃的空气中进行30分钟的热处理。 然后,将其上仍放置有测试件的涂覆夹具颠倒过来,并再次附着在转盘上,从而以类似于以下的步骤进行浸涂,预干燥和热处理。 用上述方法形成耐腐蚀膜,该膜包含分散在其中的锌细颗粒含量为90wt。%的锌细颗粒。 在试件表面的%。 发现由此形成的包含分散在其中的细锌颗粒的耐腐蚀膜的膜厚度为约10μm(从截面观察)。 以与实施例1相同的方式对如此制备的十个测试片进行耐腐蚀性测试,所述测试片的表面上具有分散在其中的细锌颗粒的耐腐蚀膜,并且在任何情况下都没有外观变化(没有生锈)。 测试后的测试件数。 \n\n 例子6 \n\n [0088] 实施例2中制备的水性处理液的粘度通过以占1wt。%的方式添加羟乙基纤维素作为增稠剂而调节至440cP。 水处理液的%。 通过使用这样获得的这种处理溶液,包含以细锌颗粒含量为60wt。%分散在其中的细锌颗粒和细铝颗粒的耐腐蚀膜。  %和30重量%的细铝颗粒含量。 在与实施例1相同的试验片的表面上,用与实施例5相同的方式,在乙醇中进行超声波清洗(脱脂处理)并自然干燥15分钟,形成%的试样。 发现由此形成的包含细锌颗粒和细铝颗粒分散在其中的耐腐蚀膜的膜厚度为约10μm(从截面观察)。 以与实施例1相同的方式对如此制备的十个测试片进行耐腐蚀性测试,其表面上具有分散在其中的细锌颗粒和细铝颗粒的耐腐蚀膜,并且外观没有变化(没有生锈)。 测试后的任何测试件上生成)。 \n\n 例子7 \n\n [0089] 通过添加羟乙基纤维素作为增稠剂,将实施例3中制备的水性处理液的粘度调节至460cP,使得其占1重量%。 水处理液的%。 通过使用这样获得的该处理溶液,以55wt。%的锌细颗粒含量包含包含细锌颗粒,细铝颗粒和细锡颗粒的耐腐蚀膜。  %,细铝颗粒含量为25重量%。  %和细锡颗粒含量为10重量%。 在与实施例1相同的试验片的表面上,用与实施例5相同的方式,在乙醇中进行超声波清洗(脱脂处理)并自然干燥15分钟,形成%的试样。 发现由此形成的包含细锌颗粒,细铝颗粒和细锡颗粒分散在其中的耐腐蚀膜的膜厚度为约10μm(从横截面观察)。 以与实施例1相同的方式对如此制备的十个测试片进行耐腐蚀性测试,其表面上具有分散在其中的细锌颗粒,细铝颗粒和细锡颗粒的耐蚀膜,未发现变化。 测试后任何测试件的外观(无生锈)。 \n\n 例子八 \n\n [0090] pH值为3且含20 wt。 硅酸乙酯的百分比(其中碱性硅酸钠含量已转化为SiO 2  以与实施例1相同的方式制备作为起始原料的水。将如此制备的水溶液与包含分散在其中的锌细颗粒,铝细颗粒,锡细颗粒和氧化铝细颗粒的水性介质混合, 通过添加有机分散剂(商标:Solsperse S20000:由Avecia Limited生产)制备,薄片状的锌细粉颗粒,其平均大直径为20μm(尺寸约为20μm×20μm×1μm),细颗粒铝 在水中,平均粒径为3μm的颗粒状锡微粒,平均粒径为3μm的氧化铝颗粒和平均粒径为1μm的氧化铝微粒。 充分搅拌所得产物后,用1N氢氧化钠将其pH值调节至7。 由此获得粘度为16cP并且包含硅酸乙酯作为起始原料,细锌颗粒,细铝颗粒,细锡颗粒和细氧化铝颗粒的水性处理液,其总含量为70重量%。  %(其中碱性硅酸钠含量转化为SiO 2  含量),其中以硅酸乙酯为起始原料,锌细粒,铝细粒,锡细粒,氧化铝细粒和有机分散剂的混合比例为9.9:55:25:8:2  :0.1(重量比;其中碱性硅酸钠含量转化为SiO 2  内容)。 通过加入羟乙基纤维素作为增稠剂,将由此制备的水性处理液的粘度调节至465cP,使得其占1重量%。 水处理液的%。 通过使用由此获得的这种处理溶液,形成了以细锌颗粒含量为55wt。%包含细锌颗粒,细铝颗粒,细锡颗粒和细氧化铝颗粒的耐腐蚀膜。  %,细铝颗粒含量为25重量%。  %,细锡颗粒含量为8重量%。  %和细氧化铝颗粒含量为2重量%。 在与实施例1相同的试验片的表面上,用与实施例5相同的方式,在乙醇中进行超声波清洗(脱脂处理)并自然干燥15分钟,形成%的试样。 发现如此形成的包含分散在其中的锌细颗粒,铝细颗粒,锡细颗粒和氧化铝细颗粒的耐腐蚀膜的膜厚为约10μm(从截面观察)。 以与实施例1相同的方式对如此制成的十个试验片进行耐腐蚀性试验,其表面上具有分散在其中的锌细颗粒,铝细颗粒,锡细颗粒和氧化铝细颗粒的耐腐蚀膜, 试验后,在任何试件上都没有发现外观变化(没有生锈)。 \n\n 比较例2 \n\n [0091] 通过以占1wt。%的方式添加羟乙基纤维素作为增稠剂,将对比例1中制备的处理溶液的粘度调节至420cP。 处理溶液的百分比。 通过使用由此获得的这种处理溶液,形成了以90wt。%的细锌颗粒含量分散在其中的细锌颗粒的耐腐蚀膜。 除了设置预干燥条件以外,与实施例5同样地,在与实施例1相同的试验片的表面上,用乙醇进行了超声波清洗(脱脂处理)并自然干燥15分钟,形成了10%的试样。 热处理条件与比较例1相同。由此形成的分散有细锌粒子的耐蚀膜的膜厚为10μm左右(截面观察)。 以与实施例1相同的方式对如此制备的十个测试片进行耐腐蚀性测试,在其表面上具有分散在其中的细锌颗粒的耐腐蚀膜,发现六个测试片的外观变化(产生生锈)。  )在200小时的时间流逝。 \n\n 工业适用性 \n\n [0092] 本发明具有工业上的适用性,因为它提供了一种稳定而简单的生产稀土金属基永磁体的方法,该永磁体在其表面上具有分散在其中的细锌颗粒的耐腐蚀膜,耐腐蚀稀土。 通过该方法制造的金属基永磁体,适合在具有各种形状的薄型工件上形成涂膜的浸涂法和在工件上形成涂膜的方法。');
INSERT INTO `os_patent_instruction_text` VALUES (13006, 22835, '【0001】明細書 耐食性希土類系永久磁石の製造方法、 耐食性希土類系永久磁石、 ワークのディッ プスピンコーティング法およびワークの塗膜形成方法 技術分野\n\n【0002】本発明は、 亜鉛微粒子分散耐食性被膜を表面に有する希土類系永久磁石の安定 かつ簡易な製造方法、 こうして製造される耐食性希土類系永久磁石、 各種形状の 薄型ワークに対する塗膜形成に適したディップスピンコーティング法およびヮー クの塗膜形成方法に関する。 背景技術\n\n【0003】N d— F e— B系永久磁石に代表される R— F e— B系永久磁石や S m— F e 一 N系永久磁石に代表される R— F e— N系永久磁石などの希土類系永久磁石は、 資源的に豊富で安価な材料が用いられ、 かつ、 高い磁気特性を有していることか ら、 特に R— F e— B系永久磁石は今日様々な分野で使用されている。\n\n【0004】しかしながら、 希土類系永久磁石は反応性の高い希土類元素： Rを含むため、 大気中で酸化腐食されやすく、 何の表面処理をも行わずに使用した場合には、 わ ずかな酸やアル力リや水分などの存在によつて表面から腐食が進行して鲭が発生 し、 それに伴って、 磁石特性の劣化やばらつきを招く。 さらに、 鑌が発生した磁 石を磁気回路などの装置に組み込んだ場合、 鲭が飛散して周辺部品を汚染する恐 れがある。 ·\n\n【0005】希土類系永久磁石に耐食性を付与する方法には数多くの方法があるが、 その一 つとして、 珪素化合物を出発原料とした耐食性被膜を希土類系永久磁石の表面に 形成する方法がある。 近年、 このような耐食性被膜の更なる性能向上を目的とし て種々の研究がなされている。\n\n【0006】例えば、 特開 2 0 0 0— 1 8 2 8 1 3号公報 （特許文献 1 ) においては、 亜鉛 微粒子を分散させたアル力リ珪酸塩水溶液からなる処理液を、 希土類系永久磁石 の表面に塗布した後、 熱処理を行うことで亜鉛微粒子分散耐食性被膜とする方法\n\nが提案されている。 この方法は、 アルカリ珪酸塩を出発原料とした被膜の耐食作 用と電位的に卑な亜鉛微粒子の犠牲防食作用を利用したものであり、 希土類系永 久磁石に高い耐食性を付与することができる方法として期待される。 しかしなが ら、 この方法においては、 亜鉛微粒子分散耐食性被膜を形成するための処理液中 に亜鉛微粒子を均一に分散させておくためには処理液をアル力リ性にしておかな ければならないため、 処理液を希土颦系永久磁石の表面に塗布した際、 磁石の表 面において磁石を構成する金属の水酸化物が生成し、 このような金属水酸化物か らなる層で磁石の表面が覆われてしまうことに起因して、 密着性に優れた亜鉛微 粒子分散耐食性被膜が形成されにくいといった問題や、 アル力リ珪酸塩を出発原 料とした被膜は柔軟性に劣るためにクラックが生じやすいといつた問題や、 廃液 処理が面倒であるといつた問題などがある。\n\n【0007】また、 特開 2 0 0 1— 1 4 3 9 4 9号公報 （特許文献 2 ) においては、 珪素有 機化合物と平均粒径が 1 nm〜l 0 0 nmの無機質微粒子を含有した処理液を、 希土類系永久磁石の表面に塗布した後、 熱処理を行うことで無機質微粒子分散耐 食性被膜とする方法が提案されている。 この方法は、 珪素有機化合物を出発原料 とした薄くて緻密な耐食性被膜を希土類系永久磁石の表面に形成するためのもの であり、 特定の平均粒径を有する無機質微粒子を被膜成分中に分散させることで、 被膜生成過程における被膜内部応力を緩和してクラックなどの物理的欠陥が発生 することを防止するものである。 この方法も希土類系永久磁石に高い耐食性を付 与することができる方法として期待される。 しかしながら、 ナノメータ一オーダ 一の無機質微粒子は水に均一に分散させることが困難なことなどを考慮すれば、 処理液の調製においては、 低級アルコールなどの有機溶媒を主体としてそこにわ ずかな水を添加し、 酸性条件下で珪素有機化合物を加水分解重合反応させてゾル 液とするとともに無機質微粒子を分散させる必要があり、 従って、 調製された処 理液は酸性であるため、 処理液を希土類系永久磁石の表面に塗布した際、 磁石の 腐食を招くといった問題や、 有機溶媒が揮発することで処理液組成が変動しやす く、 また、 環境に悪影響を与えるといった問題や、 廃液処理が面倒であるといつ た問題などがある。\n\n【0008】そこで本発明は、 亜鉛微粒子分散耐食性被膜を表面に有する希土類系永久磁石\n\nの安定かつ簡易な製造方法、 こうして製造される耐食性希土類系永久磁石、 各種 形状の薄型ワークに対する塗膜形成に適したディップスピンコーティング法およ びワークの塗膜形成方法を提供することを目的とする。\n\n【0009】発明の開示\n\n【0010】上記の点に鑑みてなされた本発明の耐食性希土類系永久磁石の製造方法は、 請 求の範囲第 1項記載の通り、 アルキルシリケートの加水分解重合反応物と平均粒 径が 1 π！〜 5 0 mの亜鉛微粒子を含有した ρ Ηが 6〜 8で粘度が 1 0 0 0 c P以下の水系処理液を、 希土類系永久磁石の表面に塗布した後、 2 5 0 ° (：〜 4 0 0 °Cにて熱処理を行うことで亜鉛微粒子分散耐食性被膜とすることを特徴とする。 また、 請求の範囲第 2項記載の製造方法は、 請求の範囲第 1項記載の製造方法 において、 亜鉛微粒子が鱗片状のものであることを特徴とする。\n\n【0011】また、 請求の範囲第 3項記載の製造方法は、 請求の範囲第 1項記載の製造方法 において、 水系処理液中における出発原料としてのアルキルシリケートと亜鉛微 粒子の合計配合割合が 4 0重量％〜9 0重量％ (アルキルシリケ一トは S i 02換算） であることを特徴とする。\n\n【0012】また、 請求の範囲第 4項記載の製造方法は、 請求の範囲第 1項記載の製造方法 において、 水系処理液中における出発原料としてのアルキルシリケ一トと亜鉛微 粒子の混合比率が 1 ： 1〜1 ： 1 9 (重量比：アルキルシリゲートは S i〇2換 算） であることを特徴とする。\n\n【0013】また、 請求の範囲第 5項記載の製造方法は、 請求の範囲第 1項記載の製造方法 において、 水系処理液中に有機分散剤を添加することを特徴とする。\n\n【0014】また、 請求の範囲第 6項記載の製造方法は、 請求の範囲第 1項記載の製造方法 において、 亜鉛微粒子分散耐食性被膜の J3莫厚が 1 m〜 5 0 mであることを特 徵とする。\n\n【0015】また、 請求の範囲第 7項記載の製造方法は、 請求の範囲第 1項記載の製造方法 において、 亜鉛微粒子分散耐食性被膜中に他の無機質微粒子をさらに分散させる ことを特徴とする。\n\n【0016】また、 請求の範囲第 8項記載の製造方法は、 請求の範囲第 1項記載の製造方法\n\nにおいて、 水系処理液の希土類系永久磁石の表面への塗布をディップスピンコー ティング法で行うことを特徴とする。\n\n【0017】また、 請求の範囲第 9項記載の製造方法は、 請求の範囲第 8項記載の製造方法 において、 粘度が 3 0 0 c P〜6 0 0 c Pの水系処理液を用いて行うことを特徴 とする。\n\n【0018】また、 請求の範囲第 1 0項記載の製造方法は、 請求の範囲第 8項記載の製造方 法において、 鉛直方向の中心軸を回転軸として回転可能な回転台座の略外周端部 上に、 複数個の希土類系永久磁石を保持し、 希土類系永久磁石が保持された回転 台座を水系処理液槽に浸漬することで希土類系永久磁石に水系処理液を浸漬塗装 した後、 液中から取り出し、 回転台座を回転させて希土類系永久磁石に余分に付 着した水系処理液を遠心振り切りすることでディップスピンコ一ティングを行う ことを特徵とする。\n\n【0019】また、 請求の範囲第 1 1項記載の製造方法は、 請求の範囲第 1 0項記載の製造 方法において、 複数個の希土類系永久磁石を回転台座の略外周端部上に略環状に 保持することを特徴とする。\n\n【0020】また、 請求の範囲第 1 2項記載の製造方法は、 請求の範囲第 1 0項記載の製造 方法において、 希土類系永久磁石が薄型磁石であることを特徴とする。\n\n【0021】また、 請求の範囲第 1 3項記載の製造方法は、 請求の範囲第 1 2項記載の製造 方法において、 薄型磁石をその最も広い面が回転台座の放射状方向に対して略平 行になるように保持することを特徴とする。\n\n【0022】また、 請求の範囲第 1 4項記載の製造方法は、 請求の範囲第 1 3項記載の製造 方法において、 回転台座の略外周端部上に装着した際、 複数個の薄型磁石を個々 の磁石が離間した状態でその最も広い面が回転台座の放射状方向に対して略平行 になるように略環状にセットすることができる塗装治具を用いて行うことを特毁 とする。\n\n【0023】また、 請求の範囲第 1 5項記載の製造方法は、 請求の範囲第 1 2項記載の製造 方法において、 薄型磁石が平板状、 リング状、 弓形状のいずれかの形状であるこ とを特徴とする。\n\n【0024】また、 請求の範囲第 1 6項記載の製造方法は、 請求の範囲第 1 4項記載の製造\n\n方法において、 ディップスピンコ一ティングを行った後、 薄型磁石がセットされ たままの塗装治具を回転台座から取り外し、 任意の場所で塗装治具にセッ卜され たままの薄型磁石を熱処理することを特徴とする。\n\n【0025】また、 本発明の希土類系永久磁石は、 請求の範囲第 1 7項記載の通り、 アルキ ルシリケートを出発原料とした被膜成分中に平均粒径が 1 m〜5 0 mの亜鉛 微粒子を分散させた耐食性被膜を表面に有することを特徴とする。\n\n【0026】また、 請求の範囲第 1 8項記載の希土類系永久磁石は、 請求の範囲第 1 7項記 載の希土類系永久磁石において、 耐食性被膜の亜鉛微粒子含有量が 5 0重量％〜 9 5重量％であることを特徴とする。\n\n【0027】また、 請求の範囲第 1 9項記載の希土類系永久磁石は、 請求の範囲第 1 7項記 載の希土類系永久磁石において、 磁石本体表面から内部に亜鉛が拡散しているこ とを特徴とする。\n\n【0028】また、 請求の範囲第 2 0項記載の希土類系永久磁石は、 請求の範囲第 1 7項記 載の希土類系永久磁石において、 請求項 1記載の製造方法により製造されたこと を特徴とする。\n\n【0029】また、 本発明のワークのディップスピンコーティング法は、 請求の範囲第 2 1 項記載の通り、 鉛直方向の中心軸を回転軸として回転可能な回転台座の略外周端 部上に、 複数個のワークを保持し、 ワークが保持された回転台座を塗料槽に浸漬 することでワークに塗料を浸漬塗装した後、 液中から取り出し、 回転台座を回転 させてワークに余分に付着した塗料を遠心振り切りすることを特徴とする。\n\n【0030】また、 本発明のワークの塗膜形成方法は、 請求の範囲第 2 2項記載の通り、 鉛 直方向の中心軸を回転軸として回転可能な回転台座の略外周端部上に装着した際、 複数個のワークを個々のワークが離間した状態で略環状にセッ卜することができ る塗装治具を用い、 ワークがセットされた塗装治具を装着した回転台座を塗料槽 に浸漬することでワークに塗料を浸漬塗装した後、 液中から取り出し、 回転台座 を回転させてワークに余分に付着した塗料を遠心振り切りし、 ワークがセッ卜さ れたままの塗装治具を回転台座から取り外し、 任意の場所で塗装治具にセットさ れたままのワークを所望により乾燥処理して行うことを特徴とする。\n\n【0031】本発明によれば、 亜鉛微粒子分散耐食性被膜を表面に有する希土類系永久磁石\n\nの安定かつ簡易な製造方法、 こうして製造される耐食性希土類系永久磁石、 各種 形状の薄型ワークに対する塗膜形成に適したディップスピンコーティング法およ びワークの塗膜形成方法が提供される。 図面の簡単な説明\n\n【0032】図 1は、 本発明のワークのディップスピン塗装方法の一例の概略工程図である。 図 2は、 本発明の回転台座の略外周端部上に複数個の平板状ワークを保持した 状態の一例の概略図である。\n\n【0033】図 3は、 本発明の回転台座の略外周端部上に複数個のリング状ワークを保持し た状態の一例の概略図である。\n\n【0034】図 4は、 本発明の塗装治具の一例の概略斜視図である。\n\n【0035】図 5は、 本発明の複数個の平板状ワークをセットした塗装治具の概略図である。 図 6は、 本発明の複数個の平板状ワークをセットした塗装治具を回転台座の略 外周端部上に装着した状態の一例の概略図である。\n\n【0036】図 7は、 実施例 4における E P MA 2次電子像である。\n\n【0037】図 8は、 同、 亜鉛 X線像である。\n\n【0038】図 9は、 同、 鉄 X線像である。 発明を実施するための最良の形態\n\n【0039】本発明において、 亜鉛微粒子分散耐食性被膜は、 アルキルシリゲートの加水分 解重合反応物と平均粒径が 1 ^ m〜5 0 mの亜鉛微粒子を含有した p Hが 6〜 8で粘度が 1 0 0 0 c P以下の水系処理液を、 希土類系永久磁石の表面に塗布し た後、 2 5 0 °C〜4 0 0 °Cにて熱処理を行うことで形成される。 このようにして 形成された亜鉛微粒子分散耐食性被膜は、 希土類系永久磁石に高い耐食性を付与 するものであるとともに、 磁石本体表面から内部に亜鉛が拡散していることで密 着性に優れる。\n\n【0040】ここで、 アルキルシリケートとしては、 一般式： S inO (n—1(O R) (2 n +2)で示されるものが用いられる。 式中、 Rはアルキル基であり、 メチル基、 ェ チル基、 プロピル基、 ブチル基などの炭素数 1〜4の低級アルキル基が例示され\n\nるが、 中でも、 安価であることに加えて毒性がなく取り扱い性に優れたェチル基\n\n【0041】(ェチルシリゲート） が好適である。 また、 nは 1以上の整数であるが、 緻密な 被膜を形成するためには nは 1 0以下の整数であることが望ましい。\n\n【0042】また、 亜鉛微粒子は、 平均粒径が l m〜 5 0 mのものが用いられる。 これ は、 平均粒径が 1 mよりも小さいと、 水系処理液中で亜鉛微粒子が二次凝集を 起こす恐れがある一方、 平均粒径が 5 O ^mよりも大きいと、 水系処理液中で亜 鉛微粒子が沈降する恐れがあり、 いずれの場合においても保存安定性に優れた亜 鉛微粒子が均一に分散した水系処理液を調製することが困難になる恐れがあるか らである。 なお、 亜鉛微粒子の平均粒径は、 2 ！〜 3 0 mが望ましく、 5 m〜2 0 /imがより望ましい。 亜鉛微粒子はいかなる形状のものであってもよい が、 亜鉛微粒子分散耐食性被膜にピンホールが極力発生しないようにするために は、 亜鉛微粒子は被膜成分中に高密度に積層充填されることが有利であり、 また、 磁石本体表面から内部に亜鋭を 散させるためには磁石本体に対する亜鉛微粒子 の接触面積は広いことが有利である。 従って、 かかる観点からは、 亜鉛微粒子は 鱗片状のものが望ましい。 亜鉛微粒子が鱗片状のものである場合、 亜鉛微粒子の 平均粒径とは平均長径を意味するものとする。\n\n【0043】水系処理液中における出発原料としてのアルキルシリケ一トと亜鉛微粒子の合 計配合割合は、 4 0重量％〜9 0重量％ (アルキルシリケ一トは S i〇2換算） とすることが望ましく、 6 0重量％〜8 0重量％とすることがより望ましい。 合 計配合割合が 4 0重量％未満であると、 十分な特性を発揮する膜厚を有する亜鉛 微粒子分散耐食性被膜を得るためには製造工程回数を必要以上に増やさなければ ならなくなる恐れがある一方、 9 0重量％を超えると、 水系処理液の保存安定性 に影響を及ぼす恐れがあるからである。\n\n【0044】水系処理液中における出発原料としてのアルキルシリケートと亜鉛微粒子の混 合比率は、 形成される亜鉛微粒子分散耐食性被膜の亜鉛微粒子含有量が 5 0重 量％〜9 5重量％になるように、 1 ： 1〜1 ： 1 9 (重量比：アルキルシリケ一 トは S i 02換算） とすることが望ましく、 1 ： 3〜1 ： 1 0とすることがより 望ましい。 形成される亜鉛微粒子分散耐食性被膜の亜鉛微粒子含有量が 5 0重 量％より少ないと、 被 J3莫成分中に亜鉛微粒子を分散させることの効果が十分に発\n\n揮されない恐れがある一方、 9 5重量％より多いと、 アルキルシリケ一トを出発 原料とする耐食性被膜としての本来的な特性が十分に発揮されない恐れがあるか らである。\n\n【0045】希土類系永久磁石の表面に塗布する水系処理液の p Hを 6〜 8と規定するのは、 p Hが 6より小さいと、 上記の特許文献 2に記載したように希土類系永久磁石の 腐食を招く恐れがある一方、 p Hが 8より大きいと、 上記の特許文献 1に記載し たように密着性に優れた亜鉛微粒子分散耐食性被膜が形成されない恐れがあるか り ¾る。\n\n【0046】希土類系永久磁石の表面に塗布する水系処理液の粘度を 1 0 0 0 c P以下と規 定するのは、 水系処理液の粘度が 1 0 0 0 c Pを超えると、 膜厚が均一な亜鉛微 粒子分散耐食性被膜を形成することが困難になる恐れがあるからである。\n\n【0047】均質性に優れた水系処理液の調製は、 例えば、 酸性条件下 （p H 3〜4程度） または塩基性条件下 （p H 1 0〜1 2程度） でアルキルシリケ一トを加水分解重 合反応させた水溶液に平均粒径が 1 m〜 5 0 mの亜鉛微粒子を添加した後、 p Hを 6〜8に調整するとともに粘度を 1 0 0 c P以下に維持または調整するこ とで行うことが望ましい （粘度は 5 0 c P以下がより望ましく 2 5 c P以下がさ らに望ましい）。 なお、 酸性条件下でアルキルシリケ一卜を加水分解重合反応さ せた場合、 p Hの調整は、 例えば、 水酸化ナトリウムなどを用いて行えばよい。 また、 塩基性条件下でアルキルシリケ一トを加水分解重合反応させた場合、 p H の調整は、 例えば、 塩酸などを用いて行えばよい。\n\n【0048】水系処理液の調製の段階でアルキルシリケ一トを加水分解重合反応させておく のは、 形成される被膜を緻密なものにするためである。 アルキルシリゲートの加 水分解重合反応は、 用いるアルキルシリケ一卜の全てを加水分解重合反応させる 必要は必ずしもなく、 その一部を加水分解重合反応させるような態様であつても よい。 加水分解重合反応の程度は、 酸や塩基の添加量や加水分解重合反応を起こ すに際して使用する媒体としての水の量にて調整することができる。 アルキルシ リケ一卜の加水分解重合反応の程度が高いと、 水溶液の粘度が 1 0 0 c Pを超え る場合がある。 いったん粘度が 1 0 0 c Pを超えた場合であっても加温水を添加 するなどすれば粘度の低下を図ることも可能ではあるが、 水系処理液のより優れ\n\nた均質性を確保するためには、 加水分解重合反応時に水溶液の粘度が 1 0 0 c P を超えそうな場合には、 適宜、 水を添加するなどしてその粘度が 1 0 0 c Pを越 えないようにすることが望ましい。 なお、 所望する膜厚の被膜が形成されやすく することを目的として水系処理液の表面張力を適度なものにしたい場合などには、 例えば、 水系処理液中にセルロース系の増粘剤 （ヒドロキシェチルセルロース、 メチルセルロース、 メチルヒドロキシプロピルセルロース、 ェチルヒドロキシェ チルセルロース、 メチルェチルセルロースなどが例示される水溶性セル口一スェ —テルなど） などを添加することで、 その粘度を調整することができる。 形成さ れる被膜の膜厚を厚くすることなどを目的として水系処理液の粘度を 1 0 0 c P 以上にしたい場合には、 いったん調製した水系処理液中に増粘剤を添加して粘度 を高めることによって行うことが望ましい。\n\n【0049】アルキルシリケ一トを加水分解重合反応させた水溶液に亜鉛微粒子を添加する に際しては、 有機分散剤を用いて、 水系処理液中で亜鉛微粒子が均一に分散する ようにすることが望ましい。 水系処理液中への有機分散剤の添加は、 例えば、 有 機分散剤を添加した水に亜鉛微粒子を投入することで亜鉛微粒子が均一に分散し た亜鉛微粒子分散水系媒体を調製し、 この亜鉛微粒子分散水系媒体とアルキルシ リケ一卜を加水分解重合反応させた水溶液を混合することで行えばよい。 なお、 有機分散媒としては、 ァニオン性分散媒 （脂肪族系多価カルボン酸、 ポリエーテ ルポリエステルカルボン酸塩、 高分子ポリエステル酸ポリアミン塩、 高分子量ポ リカルボン酸長鎖ァミン塩など)、 非イオン性分散媒 （ポリオキシエチレンアル キルエーテルやソルビタンエステルなどのカルボン酸塩ゃスルフォン酸塩やアン モニゥム塩など)、 高分子分散媒 （水溶性エポキシのカルボン酸塩ゃスルフォン 酸塩やアンモニゥム塩など、 スチレン一アクリル酸共重合物、 ニカヮなど） など が亜鉛微粒子との親和性ゃコストの点から好適に使用される。\n\n【0050】なお、 希土類系永久磁石の表面に塗布する水系処理液の粘度は、 十分な特性を 発揮する膜厚を有する亜鉛微粒子分散耐食性被膜を必要以上の製造工程回数を繰 り返すことなく形成するためには、 5 c P以上であることが望ましい。\n\n【0051】希土類系永久磁石の表面に水系処理液を塗布するに際しては、 ディップコーテ ィング法、 スプレー法、 スピンコーティング法、 ディップスピンコーティング法\n\nなどを採用することができる。 なお、 希土類系永久磁石の表面に形成される亜鉛 微粒子分散耐食性被膜との密着性の向上を図るため、 水系処理液を塗布する前に 磁石に対してサンドプラスト処理や酸洗処理を施してもよい。\n\n【0052】水系処理液の希土類系永久磁石の表面への塗布は、 より均一な水系処理液の塗 膜が形成されるようにするためには、 ディップスピンコーティング法で行うこと が望ましい。 とりわけ、 鉛直方向の中心軸を回転軸として回転可能な回転台座の 略外周端部上に、 複数個の希土類系永久磁石を保持し、 希土類系永久磁石が保持 された回転台座を水系処理液槽に浸漬することで希土類系永久磁石に水系処理液 を浸漬塗装した後、 液中から取り出し、 回転台座を回転させて希土類系永久磁石 に余分に付着した水系処理液を遠心振り切りすることでディッブスピンコーティ ングを行うことが望ましい。\n\n【0053】薄型ワークの表面に、 膜厚が例えば 1 O im程度の薄い塗膜を形成する方法と して、 ワークを塗料槽に浸漬することでワークに塗料を浸漬塗装した後、 液中か ら取り出し、 高速回転させて余分に付着した塗料を振り切ることによるディップ スピンコ一ティング法が採用されることがある。 これまでに知られている薄型ヮ ークのディップスピンコーティング法としては、 例えば、 特開平 7— 2 0 1 0 8 8号公報に光ディスクの保護膜塗布方法として提案されているものがある。 この 方法は、 水平主軸に複数個の基板を一定間隔に垂直にセットし、 主軸を中心に低 速回転させながら基板の中心部以外を保護膜材料に浸漬して該材料を塗布した後、 該材料から引き上げ、 最後に高速回転させて該材料を振り切ることによるもので ある。 また、 特開平 3— 8 6 2 7 1号公報においては、 ハンガーを用いて被塗物 の塗布面 （平面） をほぼ水平に保持した状態で、 ハンガーと被塗物を含む全体の 重心を通る鉛直線を回転軸として回転させて塗料を遠心振り切りする工程を含む ことを特徴とするディップスピンコーティング法が提案されている。 また、 特開 2 0 0 0 - 1 6 4 5 5 6号公報においては、 複数の溝を有する一対の保持部材を 溝を有する側を対向させ、 この対向する溝でウェハの周辺を保持するようにした ウェハキヤリァを用い、 キヤリアをその溝が略回転加速度方向に向くように回転 させてキャリアに保持した複数個のウェハ上の液体を遠心振り切り乾燥する方法 が提案されている。\n\nW\n\n【0054】大量の薄型ワークに対してディップスピンコーティング法を採用する場合、 ヮ ークの形状にとらわれることなく、 全てのワークに対して膜厚のばらつきを生じ させないで均一な塗装ができることが望ましい。 しかしながら、 この点に鑑みれ ば、 上記の特許文献に記載のいずれの方法も多かれ少なかれ欠点を有する。 具体 的には、 特開平 7— 2 0 1 0 8 8号公報に記載の方法では、 ワークをその中心部 で保持しなければならないので、 リング状ワークにしか適用することができない といった欠点がある。 また、 この方法では、 リング状ワークの内周面に水平主軸 を当接させ、 両者間に発生する摩擦力でワーク自体を回転させるため、 ワークと 主軸との間に発生する摩擦力にばらつきがあると、 ワークの回転速度がばらつく ので、 全てのワークに対して均一な塗装ができない恐れがあるといつた欠点や、 ヮ一クを高速回転させることが困難であるため、 粘性が高い塗料 （例えば粘度が 5 0 0 c Pを超えるようなもの） をワークに塗装する場合には、 余分に付着した 塗料を十分に振り切ることができない恐れがあるといった欠点がある。 また、 特 開平 3— 8 6 2 7 1号公報に記載の方法では、 ワークの平面をほぼ水平に保持す るので、 上面と下面との間で塗料の付着量に差異が生じる恐れがあるといった欠 点がある。 また、 特開 2 0 0 0— 1 6 4 5 5 6号公報に記載の方法では、 ワーク の一方の平面が回転軸に対向して保持されるので、 保持位置によってワークごと にその回転速度が異なることから、 全てのワークに対して均一な塗装ができない 恐れがあるといつた欠点がある。\n\n【0055】しかしながら、 本発明において提案するディップスピンコーティング法によれ ば、 大量の薄型ワークに対しても膜厚のばらつきを生じさせないで均一な塗膜形 成ができる。\n\n【0056】以下、 本発明において提案するディップスピンコーティング法を、 必要に応じ て図面を参照しながら説明するが、 本発明において提案するディップスピンコー ティング法は以下の記載に何ら限定して解釈されるものではない。 本発明におい て提案するディッブスビンコ一ティング法は、 ワークの形状にとらわれることな く、 あらゆる形状のワークの塗装に適用することができるが、 とりわけ平板状や リング状や弓形状などの薄型ワークの塗装に好適であるので、 以下の説明におい ては、 本発明の方法を平板状ワークとリング状ワークの塗装に適用する場合を例\n\nW\n\n【0057】にとる。\n\n【0058】図 1は、 本発明において提案するディップスピンコ一ティング法の一例の概略 工程図である。 その工程を順を追って説明すると、 （a ) まず、 鉛直方向の中心 軸 1を回転軸として回転可能な回転台座 2の略外周端部上に、 複数個の平板状ヮ ーク Xを、 その個々の最も広い面 （平面） が放射状方向に略平行になるように略 環状に保持する。 （b ) 次に、 エアシリンダ 3により塗料槽 4を上昇させてヮー ク Xが保持された回転台座 2を塗料槽 4に浸漬することでワーク Xに塗料を浸漬 塗装する。 （c ) 次に、 エアシリンダ 3により塗料槽 4を下降させて回転台座 2 を液中から取り出す。 （d ) 最後に、 回転台座 2をモータ 5により中心軸 1を回 転軸として回転させて （少なくとも 1回は回転方向を逆転することが望ましい）、 ワーク Xの平面に余分に付着した塗料を遠心振り切りする。 この方法によれば、 粘性が比較的高い塗料 （例えば粘度が 2 0 0 c Pを超えるようなもの） であって も、 回転台座 2の大きさを調整したり回転速度を制御したりすることで、 ワーク Xの平面への塗料の付着量を自在に調整することができることから、 形成される 塗膜の膜厚も自在に調整することができる。\n\n【0059】なお、 回転台座 2の台座面は、 塗料溜りができたりしないように、 メッシュ状 であることが望ましい。\n\n【0060】図 2 ( a ) は、 回転台座 2の略外周端部上に、 複数個の平板状ワーク Xを、 そ の個々の平面が放射状方向に略平行になるように略環状に保持した状態の一例の 概略部分斜視図である。 図 2 ( b ) は、 ヮ一ク Xを保持した回転台座 2をその上 方から見た図である。 ワーク Xは、 回転台座 2に敷設された 2本の保持部材 （断 面が半円の棒状のものが望ましい） 1 1上に載置される。 ワーク Xは、 図 1に示 したように、 回転台座 2上に直に載置してもよいが、 このような載置方法を採用 することで、 ワーク Xの下面に生じる載置跡を極小化することができる （図 2 ( c ) 参照)。\n\n【0061】個々の平板状ワーク Xは、 保持部材 1 1に対して鉛直方向に設けられたスぺ一 サ 1 2によって離間した状態で保持される。 なお、 スぺーサ 1 2はワーク Xの横 転を防止する機能も併せ持つ。 隣接するスぺーサ 1 2とスぺ一サ 1 2の間隔は、 ワーク Xの厚みよりも広いことが望ましい。 常にワーク Xの両面にスぺ一サ 1 2\n\nが当接していると、 その当接跡が顕著になるからである。 また、 スぺーサ 1 2の 断面は円形であることが望ましい。 回転台座 2を回転させることによってワーク Xの平面に生じる当接跡を極小化することができるからである。\n\n【0062】工程 （d ) において、 回転台座 2をモー夕 5により中心軸 1を回転軸として回 転させて平板状ワーク Xの平面に余分に付着した塗料を遠心振り切りする際、 ヮ ーク Xは、 遠心力により放射状方向に飛び出そうとするが、 図略の構成によって 回転台座 2に固定され、 水平方向に配置された遠心飛び出し規制棒 1 3は、 ヮー ク Xの外側側面に当接してワーク Xの放射状方向への飛び出しを規制する働きを 有する。 また、 遠心飛び出し規制棒 1 3に対して回転軸方向に設けられたスぺー サ 1 4は、 遠心振り切り中のワーク Xの動きを規制する働きを有する。\n\n【0063】図 3 ( a ) は、 回転台座 2の略外周端部上に、 複数個のリング状ワーク Yを、 その個々の平面が放射状方向に略平行になるように略環状に保持した状態の一例 の概略部分斜視図である。 ワーク Yは、 図略の構成によって回転台座 2に固定さ れた水平吊掛部材 1 5に、 そのリング部にて吊り掛けられて保持される。 水平吊 掛部材 1 5は、 断面が円形の棒状のものが望ましい。 また、 水平吊掛部材 1 5の ワーク Yが吊り掛けられる部分は、 例えば V字型に切り欠いておくことが望まし い （図 3 ( b ) 参照)。 水平吊掛部材 1 5をこのような構成とすることで、 ヮー ク Yのリング部に生じる吊掛跡を極小化することができる。\n\n【0064】複数個の薄型ワークにディップスピン塗装を行うに際しては、 図 1〜図 3に示 したように、 薄型ワークの 1個 1個を直接的に回転台座に保持させてもよいが、 回転台座の略外周端部上に装着した際、 複数個の薄型ワークを個々のワークが離 間した状態でその最も広い面が回転台座の放射状方向に対して略平行になるよう に略環状にセッ卜することができる塗装治具を用いてもよい。\n\n【0065】図 4は、 回転台座の略外周端部上に装着した際、 複数個の平板状ワークを個々 のワークが離間した状態でその平面が回転台座の放射状方向に対して略平行にな るように略環状にセヅトすることができる塗装治具の一例の概略斜視図である。 この塗装治具 Zは、 複数個の平板状ワーク Xを個々のワークが離間した状態でそ の平面が鉛直方向に略平行になるように保持するための、 水平方向に平行配置さ れた、 2本の、 スぺ一サ 2 2付き保持棒 2 1と、 ワーク Xがセットされた治具を\n\nW\n\n【0066】回転台座の略外周端部上に装着して回転台座を回転させた際に、 ワーク Xの外側 側面に当接して遠心力による放射状方向へのワーク Xの飛び出しを規制するため の、 水平方向に平行配置された、 スぺーサ 2 4付き遠心飛び出し規制棒 2 3を少 なくとも有してなるが、 保持棒 2 1の上方に、 治具を上下反転させた際に、 複数 個のワーク Xを個々のワークが離間した状態でその平面が鉛直方向に略平行にな るように、 かつ、 ワーク Xの上部が保持棒 2 1と空間を存するように保持するた めの、 保持棒 2 1に平行配置された、 2本の、 スぺーサ 2 6付き棒状部材 2 5を さらに有してなる。 ワーク Xを上段にて保持するための保持棒 2 1は、 治具を上 下反転させた際に、 棒状部材 2 5として機能する。\n\n【0067】図 5は、 複数個の薄型ワーク Xをセットした塗装治具 Zの概略正面図 （a ) と D— D断面図 （b ) である。\n\n【0068】保持棒 2 1と棒状部材 2 5は、 断面が円形であることが望ましい。 薄型ワーク Xの下面に生じる載置跡を極小化することができるからである。 また、 遠心飛び 出し規制棒 2 3も、 断面が円形であることが望ましい。 薄型ワーク Xの外側側面 に生じる当接跡を極小化することができるからである。 また、 スぺ一サ 2 2とス ぺーサ 2 4とスぺーサ 2 6も、 断面が円形であることが望ましい。 薄型ワーク X の平面に生じる当接跡を極小化することができるからである。 なお、 保持棒 2 1 と棒状部材 2 5は、 必ずしも 2本必要であるわけではなく、 1本であってもよい。 図 4に示した塗装治具 Zは、 例えば、 次のようにして用いられる。 図 6は、 自 体公知の着脱自在な装着手段により、 複数個の平板状ワーク Xをセットした塗装 治具 Zを、 回転台座 2の略外周端部上に装着した状態の一例の概略部分平面図で ある。 図 1に示した概略工程図に従って、 エアシリンダ 2により塗料槽 4を上昇 させてワーク Xをセットした塗装治具 Zを装着した回転台座 2を塗料槽 4に浸漬 することでワーク Xに塗料を浸漬塗装する。 次に、 エアシリンダ 3により塗料槽 4を下降させて回転台座 2を液中から取り出す。 最後に、 回転台座 2をモ一夕 5 により中心軸 1を回転軸として回転させてワーク Xの平面に余分に付着した塗料 を遠心振り切りすることでディップスピン塗装を完了する。 任意時間経過後、 ヮ ーク Xがセッ卜されたままの塗装治具 Zを回転台座 2から取り外し、 任意の場所 で塗装治具 Zにセットされたままのワーク Xを所望により乾燥処理 （自然乾燥ま\n\nたは加熱乾燥） する。 その後、 ワーク Xがセットされたままの塗装治具 Zを上下 反転させて再び回転台座 2に装着し、 ディップスピン塗装を前記と同様の工程に て再び行う。 このようにすれば、 1回目の塗装と 2回目の塗装とでは、 ワーク X に生じる載置跡や当接跡の位置が変わるので、 2回目の塗装により、 1回目の塗 装でヮ一ク Xに生じた載置跡や当接跡にも塗装が行われることから、 ワーク Xに 対してより均一な塗装を行うことができる。 その後、 ワーク Xがセットされたま まの塗装治具 Zを回転台座 2から取り外し、 任意の場所で塗装治具 Zにセットさ れたままのヮ一ク Xを所望により乾燥処理 （自然乾燥または加熱乾燥） すれば、 大量のワークに対しても膜厚のばらつきを生じさせないで均一な塗膜形成を効率 よく行うことができる。\n\n【0069】なお、 水系処理液の希土類系永久磁石の表面への塗布をディップスピンコーテ ィング法で行う場合、 粘度が 3 0 0 c P〜6 0 0 c Pの水系処理液を用いること で、 より均一な塗膜形成を行うことができる。 このような粘度の水系処理液は、 上述したように、 いったん調製した水系処理液中にセルロース系の増粘剤などを 添加することで粘度を高めたものであることが望ましい （増粘剤は水系処理液中 に 1重量％〜 2重量％含まれるように添加することが望ましい）。\n\n【0070】表面に水系処理液の塗膜が形成された希土類系永久磁石の熱処理は、 2 5 0 °C 〜4 0 0 °Cにて行う。 このような温度条件にて熱処理を行うと、 水系処理液中に 含まれる亜鉛微粒子の一部が、 被膜生成過程において、 磁石本体表面から内部に 適度に拡散することで、 密着性に優れた亜鉛微粒子分散耐食性被膜が形成される。 熱処理の温度が 2 5 0 よりも低いと、 このような亜鉛の拡散が十分に起こらな いばかりか、 水が十分に蒸発せずに希土類系永久磁石の表面に残存することで、 その後において磁石の腐食を招く恐れがある一方、 4 0 0 °Cよりも高いと、 亜鉛 の拡散が必要以上に起こることで磁石特性に悪影響を及ぼす恐れがある。 熱処理 の時間は、 例えば、 1 0分〜 1 2 0分が望ましい。 なお、 水系処理液を表面に塗 布した希土類系永久磁石をいつたん 1 0 0 °C~ 1 7 0 °Cで仮乾燥してから熱処理 を行うことで、 より均質な亜鉛微粒子分散耐食性被膜を形成することができる。 亜鉛微粒子分散耐食性被膜は、 その膜厚が 1 m〜5 0 /i mとなるように形成 することが望ましく、 5 m〜l 5 mとなるように形成することがより望まし\n\nい。 膜厚が 1 m未満であると、 亜鉛微粒子分散耐食性被膜としての特性が十分 に発揮されない恐れがある一方、 膜厚が 50 ^ mを超えると、 希土類系永久磁石 の有効体積が十分に確保することができなくなる恐れがあるからである。\n\n【0071】なお、 亜鉛微粒子分散耐食性被膜中に他の無機質微粒子をさらに分散させても よい。 無機質微粒子としては、 例えば、 アルミニウム、 錫、 マンガン、 マグネシ ゥム、 チタン、 ニッケルなどの亜鉛と同様に電位的に卑な金属の微粒子が挙げら れる。 例えば、 亜鉛微粒子とともにアルミニウム微粒子を分散させることで、 亜 鉛微粒子の腐食による白錡 （塩基性炭酸亜鉛） の生成を効果的に防止することが できる。 また、 被膜に発生しうるピンホールをより低減化し、 被膜の耐食性をよ り高めるために、 被膜中に亜鉛微粒子とともに A 12〇3や T i〇2や S i 02や マイ力などの酸化物微粒子を分散させてもよい。 亜鉛微粒子とともに他の無機質 微粒子を分散させる場合、 形成される耐食性被膜の亜鉛微粒子と他の無機質微粒 子の合計含有量は、 95重量％以下であることが望ましい。\n\n【0072】希土類系永久磁石としては、 N d— F e— B系永久磁石に代表される R— F e ― B系永久磁石や Sm-Fe-N系永久磁石に代表される R— Fe—N系永久磁 石などの公知の希土類系永久磁石が挙げられる。 中でも、 R— Fe— B系永久磁 石は、 特に磁気特性が高く、 量産性や経済性に優れている点において望ましいも のである。 希土類系永久磁石は、 焼結磁石であってもよいしポンド磁石であって もよい。\n\n【0073】希土類系永久磁石における希土類元素 （R) は、 Nd、 P r、 Dy、 Ho、 T b、 Smのうち少なくとも 1種、 あるいはさらに、 La、 Ce、 Gd、 E r、 E u、 Tm、 Yb、 Lu、 Yのうち少なくとも 1種を含むものが望ましい。\n\n【0074】また、 通常は Rのうち 1種をもって足りるが、 実用上は 2種以上の混合物 （ミ ッシュメタルゃジジムなど） を入手上の便宜などの理由によつて使用することも できる。\n\n【0075】さらに、 A l、 T i、 V、 C r、 Mn、 B i、 Nb、 Ta、 Mo、 W、 Sb、 Ge、 Sn、 Z r、 N i、 S i、 Zn、 Hf、 G aのうち少なくとも 1種を添加 することで、 保磁力ゃ減磁曲線の角型性の改善、 製造性の改善、 低価格化を図る ことが可能となる。 また、 F eの一部を Coで置換することによって、 得られる\n\n磁石の磁気特性を損なうことなしに温度特性を改善することができる。 実施例\n\n【0076】以下、 本発明を実施例と比較例によってさらに詳細に説明するが、 本発明はこ れに限定して解釈されるものではない。\n\n【0077】実施例 1 ：\n\n【0078】出発原料として、 電解鉄、 フエロボロン、 Rとしての Ndを所要の磁石組成に 配合し、 溶解铸造後、 機械的粉碎法にて粗粉砕してから微粉碎することで粒度が 3 / m〜l 0 mの微粉末を得、 これを 10 k〇 eの磁界中で成形してからアル ゴン雰囲気中で 1 100°CX 1時間の焼結を行った後、 得られた焼結体に対し て 600°CX 2時間の時効処理を行い、 15Nd— 7B— 78 F eの組成を有 する磁石体から切り出した 36mmX 32mmX 3 mm寸法の平板状焼結磁石 試験片を用いて以下の実験を行つた。\n\n【0079】A. ェチルシリゲート 40 (ェチルシリゲートを S i〇2換算で 40重量％含 有する無色透明液体） に水を添加し、 1N塩酸で pHを 3に調整することでヱチ ルシリケ一トを加水分解重合反応させ、 出発原料としてのェチルシリゲートを 2 0重量％ (S i 02換算） 含有する水溶液を調製した。 この水溶液と、 有機分散 剤 （商品名ソルスパース S 20000 :アビシァ社製） と平均長径が 20 mの 鱗片状亜鉛微粒子 （概寸法 20 mx 20 mx 1 ^m) を水に添加して調製 した亜铅微粒子分散水系媒体を混合し、 よく攪拌して 1 N水酸化ナトリゥムで p Hを 7に調整し、 出発原料としてのェチルシリケートと亜鉛微粒子の合計配合割 合が 70重量％ (ェチルシリゲートは S i 02換算） で、 出発原料としてのェチ ルシリゲートと亜鉛微粒子と有機分散剤の混合比率が、 9. 9 : 90 : 0. 1\n\n【0080】(重量比：ェチルシリゲートは S i 02換算） である粘度が 15 c Pの水系処理 液を得た。\n\n【0081】B. エタノールにて超音波洗浄 （脱脂処理） してから 15分間自然乾燥させた 試験片を上記の水系処理液に浸漬した。 水系処理液から取り出した試験片を遠心 乾燥機に収容し、 300 r pmにて 30秒間振り切りすることで試験片の表面に 付着している余分な水系処理液を除去した後、 100°CX 5分間大気中にて仮\n\n乾燥した。 こうして表面に塗布した水系処理液を仮乾燥させた試験片を再度水系 処理液に浸漬した。 水系処理液から取り出した試験片の表面に付着している余分 な水系処理液を上記と同様にして除去した後、 表面に水系処理液の塗膜が形成さ れた試験片に対して 320°CX 10分間大気中にて熱処理を行い、 試験片の表 面に亜鉛微粒子含有量が 90重量％の亜鉛微粒子分散耐食性被膜を形成した。 形 成された亜鉛微粒子分散耐食性被膜の膜厚は約 10 /mであった （断面観察よ り）。\n\n【0082】C. こうして製造された亜鉛微粒子分散耐食性被膜を表面に有する試験片 10 個に対して 35 °Cの 5 %塩水を 500時間噴霧するという耐食性試験を行つたが、 試験後において外観変化 （発鲭） を来したものはなかった。\n\n【0083】実施例 2 ：\n\n【0084】実施例 1と同様にして調製した出発原料としてのェチルシリケ一トを 20重 量％ (S i〇2換算） 含有する pHが 3の水溶液と、 有機分散剤 （商品名ソルス パース S 20000 :アビシァ社製） と平均長径が 20 mの鱗片状亜鉛微粒子 (概寸法 20 imX 20 mX 1 urn) と平均粒径が 3 の粒状アルミニゥ ム微粒子を水に添加して調製した亜鉛 ·アルミニウム微粒子分散水系媒体を混合 し、 よく攪拌して 1N水酸化ナトリウムで pHを 7に調整し、 出発原料としての ェチルシリケ一卜と亜鉛微粒子とアルミニウム微粒子の合計配合割合が 70重 量％ (ェチルシリケ一トは S i 02換算） で、 出発原料としてのェチルシリケ一 トと亜鉛微粒子とアルミニウム微粒子と有機分散剤の混合比率が、 9. 9 : 6 0 : 30 : 0. 1 (重量比：ェチルシリケ一卜は S i 02換算） である粘度が 1 3 c Pの水系処理液を得た。 この水系処理液を用いて実施例 1と同様の試験片の 表面に実施例 1と同様にして亜鉛微粒子含有量が 60重量％でアルミニウム微粒 子含有量が 30重量％の亜鉛 ·アルミニウム微粒子分散耐食性被膜を形成した。 形成された亜鉛 ·アルミニウム微粒子分散耐食性被膜の膜厚は約 10 mであつ た （断面観察より）。 こうして製造された亜鉛 ·アルミニウム微粒子分散耐食性 被膜を表面に有する試験片 10個に対して実施例 1と同様の耐食性試験を行った が、 試験後において外観変化 （発鲭） を来したものはなかった。\n\n【0085】実施例 3 ：\n\n実施例 1と同様にして調製した出発原料としてのェチルシリケートを 20重 量％ (S i〇2換算） 含有する pHが 3の水溶液と、 有機分散剤 （商品名ソルス パ一ス S 20000 :アビシァ社製） と平均長径が 20 mの鱗片状亜鉛微粒子 (概寸法 20 iimx 20 πιΧ 1 ) と平均粒径が 3 の粒状アルミニゥ ム微粒子と平均粒径が 3 mの粒状錫微粒子を水に添加して調製した亜鉛 ·アル ミニゥム ·錫微粒子分散水系媒体を混合し、 よく攪拌して 1 N水酸化ナトリゥム で pHを 7に調整し、 出発原料としてのェチルシリゲートと亜鉛微粒子とアルミ ニゥム微粒子と錫微粒子の合計配合割合が 70重量％ (ェチルシリケ一トは S i o2換算） で、 出発原料としてのェチルシリゲートと亜鉛微粒子とアルミニウム 微粒子と錫微粒子と有機分散剤の混合比率が、 9. 9 : 55 : 25 : 10 : 0. 1 (重量比：ェチルシリケ一トは S i〇2換算） である粘度が 18 c Pの水系処 理液を得た。 この水系処理液を用いて実施例 1と同様の試験片の表面に実施例 1 と同様にして亜鉛微粒子含有量が 55重量％でアルミニウム微粒子含有量が 25 重量％で錫微粒子含有量が 10重量％の亜鉛 ·アルミニウム ·錫微粒子分散耐食 性被膜を形成した。 形成された亜鉛 ·アルミニウム ·錫微粒子分散耐食性被膜の 膜厚は約 l O mであった （断面観察より）。 こうして製造された亜鉛 ·アルミ ニゥム ·錫微粒子分散耐食性被膜を表面に有する試験片 10個に対して実施例 1 と同様の耐食性試験を行ったが、 試験後において外観変化 （発鲭） を来したもの はなかった。\n\n【0086】比較例 1 ：\n\n【0087】A. S i〇2ZNa20が 4. 0で p Hが 12のアルカリ珪酸ナトリウム水溶 液を調製した。 この水溶液と、 有機分散剤 （商品名ソルス Λ—ス S 20000 : アビシァ社製） と平均長径が 20 imの鱗片状亜鉛微粒子 （概寸法 20 mx 20 mx 1 rn) を水に添加して調製した亜鉛微粒子分散水系媒体を混合し、 よく攪拌して、 出発原料としてのアル力リ珪酸ナトリゥムと亜鉛微粒子の合計配 合割合が 70重量％ (アルカリ珪酸ナトリウムは S i 02換算） で、 出発原料と してのアル力リ珪酸ナ卜リゥムと亜鉛微粒子と有機分散剤の混合比率が、 9. 9 : 90 : 0. 1 (重量比：アルカリ珪酸ナトリウムは S i 02換算） である処 理液を得た。\n\nB. エタノールにて超音波洗浄 （脱脂処理） してから 15分間自然乾燥させた 実施例 1と同様の試験片を上記の処理液に浸漬した。 処理液から取り出した試験 片を遠心乾燥機に収容し、 300 r pmにて 30秒間振り切りすることで試験片 の表面に付着している余分な処理液を除去した後、 100°CX 5分間大気中に て仮乾燥した。 こうして表面に塗布した処理液を仮乾燥させた試験片を再度処理 液に浸漬した。 処理液から取り出した試験片の表面に付着している余分な処理液 を上記と同様にして除去した後、 表面に処理液の塗膜が形成された試験片に対し て 150°CX 30分間大気中にて熱処理を行い、 試験片の表面に亜鉛微粒子含 有量が 90重量％の亜鉛微粒子分散耐食性被膜を形成した。 形成された亜鉛微粒 子分散耐食性被膜の膜厚は約 10 mであった （断面観察より）。\n\n【0088】C. こうして製造された亜鉛微粒子分散耐食性被膜を表面に有する試験片 10 個に対して 35°Cの 5%塩水を 500時間噴霧するという耐食性試験を行ったと ころ、 200時間経過時点において外観変化 （発鲭） を来したものが 7個存在し た。\n\n【0089】実施例 4：\n\n【0090】急冷合金法で作製した、 Nd： 12原子％、 Fe ： 77原子％、 B： 6原子％、 Co： 5原子％の組成からなる平均長径 150 mの合金粉末にエポキシ樹脂を 2wt %加えて混練し、 686 NZmm2の圧力で圧縮成形した後、 150°Cで 1時間キュアすることによって作製した、 外径 3 OmmX内径 28mmX長さ 4mmのリング状ボンド磁石試験片を用いて実施例 1と同様の実験を行い、 試験 片の表面に亜鉛微粒子含有量が 90重量％の亜鉛微粒子分散耐食性被膜を形成し た。 形成された亜鉛微粒子分散耐食性被膜の膜厚は約 10 mであった （断面観 察より）。 また、 EPMA (電子線マイクロアナライザー：島津製作所社製 EP M810) を用いて亜鉛微粒子分散耐食性被膜を表面に有する試験片の表面付近 の断面観察を行つた。 その 2次電子像を図 7に亜鉛 X線像を図 8に鉄 X線像を図 9に示す。 図 7〜図 9より、 試験片本体表面から内部に亜鉛が拡散していること が判明した。 なお、 亜鉛の拡散による試験片本体の磁気特性の劣化は認められな かった。 こうして製造された亜鉛微粒子分散耐食性被莫を表面に有する試験片 1 0個に対して 35 °Cの 5 %塩水を 500時間噴霧するという耐食性試験を行つた\n\nが、 試験後において外観変化 （発鑌） を来したものはなかった。\n\n【0091】実施例 5 ：\n\n【0092】実施例 1で調製した水系処理液に、 増粘剤としてヒドロキシェチルセルロース をその濃度が 1重量％となるように添加し、 粘度を 4 5 0 c Pに調整した。 エタ ノールにて超音波洗浄 （脱脂処理） してから 1 5分間乾燥させた実施例 1と同様 の多数の試験片を、 図 4に示した塗装治具にセットし、 試験片をセットした塗装 治具を図 6のようにして回転台座の略外周端部上に装着し、 図 1のようにして前 記の処理液を用いたディップスピンコ一ティングを行った （遠心振り切りは 3 0 O r p mで 3 0秒間)。 その後、 試験片がセットされたままの塗装治具を回転台 座から取り外し、 試験片を塗装治具にセットしたまま 1 3 0 °C X 1 0分間大気 中にて仮乾燥し、 続いて、 表面に水系処理液の塗膜が形成された試験片に対して 3 5 0 °C X 3 0分間大気中にて熱処理を行った。 次に、 試験片がセッ小された ままの塗装治具を上下反転させて再び回転台座に装着し、 前記と同様の工程でデ ィップスピンコ一ティングと仮乾燥と熱処理を行うことで、 試験片の表面に亜鉛 微粒子含有量が 9 0重量％の亜鉛微粒子分散耐食性被膜を形成した。 形成された 亜鉛微粒子分散耐食性被膜の膜厚は 1 0 / mであった （断面観察より）。 こうし て製造された亜鉛微粒子分散耐食性被膜を表面に有する試験片 1 0個に対して実 施例 1と同様の耐食性試験を行ったが、 試験後において外観変化 （発錡） を来し たものはなかった。\n\n【0093】実施例 6 ：\n\n【0094】実施例 2で調製した水系処理液に、 増粘剤としてヒドロキシェチルセルロース をその濃度が 1重量％となるように添加し、 粘度を 4 4 0 c Pに調整した。 この 処理液を用いて、 エタノールにて超音波洗浄 （脱脂処理） してから 1 5分間乾燥 させた実施例 1と同様の試験片の表面に、 実施例 5と同様にして、 亜鉛微粒子含 有量が 6 0重量％でアルミニウム微粒子含有量が 3 0重量％の亜鉛 ·アルミニゥ ム微粒子分散耐食性被膜を形成した。 形成された亜鉛 ·アルミニウム微粒子分散 耐食性被膜の膜厚は 1 0 mであった （断面観察より）。 こうして製造された亜 鉛■アルミニウム微粒子分散耐食性被膜を表面に有する試験片 1 Q個に対して実 施例 1と同様の耐食性試験を行ったが、 試験後において外観変化 （発鲭） を来し\n\nたものはなかった。\n\n【0095】実施例 7 ：\n\n【0096】実施例 3で調製した水系処理液に、 増粘剤としてヒドロキシェチルセルロース をその濃度が 1重量％となるように添加し、 粘度を 460 c Pに調整した。 この 処理液を用いて、 エタノールにて超音波洗浄 （脱脂処理） してから 15分間乾燥 させた実施例 1と同様の試験片の表面に、 実施例 5と同様にして、 亜鉛微粒子含 有量が 55重量％でアルミニウム微粒子含有量が 25重量％で錫微粒子含有量が\n\n【0097】10重量％の亜鉛 ·アルミニウム ·錫微粒子分散耐食性被膜を形成した。 形成さ れた亜鉛 ·アルミニウム ·錫微粒子分散耐食性被膜の膜厚は 10 mであった\n\n【0098】(断面観察より）。 こうして製造された亜鉛 \'アルミニウム ·錫微粒子分散耐食 性被膜を表面に有する試験片 10個に対して実施例 1と同様の耐食性試験を行つ たが、 試験後において外観変化 （発鲭） を来したものはなかった。\n\n【0099】実施例 8：\n\n【0100】実施例 1と同様にして調製した出発原料としてのェチルシリケ一卜を 20重 量％ (S i02換算） 含有する pHが 3の水溶液と、 有機分散剤 （商品名ソルス パース S 20000 :アビシァ社製） と平均長径が 20 mの鱗片状亜鉛微粒子 (概寸法 20 m 20 m 1 ^m) と平均粒径が 3 imの粒状アルミニゥ ム微粒子と平均粒径が 3 mの粒状錫微粒子と平均粒径が 1 mのアルミナ微粒 子を水に添加して調製した亜鉛 ·アルミニウム ·錫 ·アルミナ微粒子分散水系媒 体を混合し、 よく攪拌して 1N水酸化ナトリウムで pHを 7に調整し、 出発原料 としてのェチルシリケ一トと亜鉛微粒子とアルミニウム微粒子と錫微粒子とアル ミナ微粒子の合計配合割合が 70重量％ (ェチルシリケ一トは S i02換算） で、 出発原料としてのェチルシリケ一トと亜鉛微粒子とアルミニウム微粒子と錫微粒 子とアルミナ微粒子と有機分散剤の配合比率が、 9. 9 : 55 : 25 : 8 : 2 : 0. 1 (重量比：ェチルシリゲートは S i 02換算） である粘度が 16 c Pの水 系処理液を得た。 この水系処理液に、 増粘剤としてヒドロキシェチルセルロース をその濃度が 1重量％となるように添加し、 粘度を 465 c Pに調整した。 この 処理液を用いて、 エタノールにて超音波洗浄 （脱脂処理） してから 15分間乾燥 させた実施例 1と同様の試験片の表面に、 実施例 5と同様にして、 亜鉛微粒子含\n\n有量が 5 5重量％でアルミニウム微粒子含有量が 2 5重量％で錫微粒子含有量が 8重量％でアルミナ微粒子含有量が 2重量％の亜鉛 ·アルミニウム ·錫 ·アルミ ナ微粒子分散耐食性被膜を形成した。 形成された亜鉛 ·アルミニウム ·錫 ·アル ミナ微粒子分散耐食性被膜の膜厚は 1 0 mであった （断面観察より）。 こうし て製造された亜鉛 ·アルミニウム ·錫 ·アルミナ微粒子分散耐食性被膜を表面に 有する試験片 1 0個に対して実施例 1と同様の耐食性試験を行ったが、 試験後に おいて外観変化 （発鲭） を来したものはなかった。\n\n【0101】比較例 2 ：\n\n【0102】比較例 1で調製した処理液に、 増粘剤としてヒドロキシェチルセルロースをそ の濃度が 1重量％となるように添加し、 粘度を 4 2 0 c Pに調整した。 この処理 液を用いて、 エタノールにて超音波洗浄 （脱脂処理） してから 1 5分間乾燥させ た実施例 1と同様の試験片の表面に、 仮乾燥条件と熱処理条件を比較例 1と同様 にしたこと以外は実施例 5と同様にして、 亜鉛微粒子含有量が 9 0重量％の亜鉛 微粒子分散耐食性被膜を形成した。 形成された亜鉛微粒子分散耐食性被膜の膜厚 は 1 0 mであった （断面観察より）。 こうして製造された亜鉛微粒子分散耐食 性被膜を表面に有する試験片 1 0個に対して実施例 1と同様の耐食性試験を行つ たところ、 2 0 0時間経過時点において外観変化 （発鲭） を来したものが 6個存 在した。 産業上の利用可能性\n\n【0103】本発明は、 亜鉛微粒子分散耐食性被膜を表面に有する希土類系永久磁石の安定 かつ簡易な製造方法、 こうして製造される耐食性希土類系永久磁石、 各種形状の 薄型ワークに対する塗膜形成に適したディップスピンコ一ティング法およびヮ一 クの塗膜形成方法を提供することができる点において産業上の利用可能性を有す る。', '【0001】说明耐腐蚀稀土永磁体的制造方法，耐腐蚀稀土永磁体，工作浸渍旋涂方法和工作涂层成膜技术领域\n\n  【0002】本发明是一种稳定且简单的方法，用于生产在其表面具有分散有锌细颗粒的耐腐蚀涂层的稀土永磁体，以这种方式生产的耐腐蚀稀土永磁体，并且适用于在各种形状的薄工件上形成涂膜。 浸涂法和烟雾涂膜的形成方法技术领域本发明涉及浸涂法和烟雾涂膜的形成方法。 背景技术\n\n  【0003】以R_Fe_B系统永磁体为代表的N d_F e_B系统永磁体和以R_Fe_N系统永磁体为代表的Sm_Fe 1 N系统永磁体 稀土类永磁体，例如磁体，是由丰富的资源和廉价的材料制成的，并且具有很高的磁性能，因此，RF-B-B系永磁体在当今的各个领域得到了应用。 用于。\n\n  【0004】然而，由于稀土永磁体包含高反应性稀土元素：R，因此它容易在大气中被氧化腐蚀，如果不经任何表面处理即使用，会产生少量酸。 由于磁力，湿气等的存在，从表面开始腐蚀，导致焊料的产生，这导致磁体特性的劣化和变化。 此外，如果将包含铁的磁铁矿结合在诸如磁路的装置中，则铁会散布并污染周边部分。  ·\n\n  【0005】有很多赋予稀土类永磁体耐腐蚀性的方法，其中一种方法是使用硅化合物作为原料在稀土永磁体的表面上形成耐腐蚀涂层。  .. 近年来，为了进一步提高这种耐蚀涂层的性能，已经进行了各种研究。\n\n  【0006】例如，在日本特开20000-18082813号公报（专利文献1）中，将由分散有锌细颗粒的碱性硅酸盐水溶液构成的处理液用稀土类永磁体处理。 在磁体表面涂覆之后，进行热处理以获得锌细颗粒分散的耐腐蚀涂层。\n\n 被提议。 该方法利用由碱金属硅酸盐制成的涂层的耐腐蚀性和作为电位的基础的锌颗粒的牺牲防腐蚀作用，并且可以赋予稀土永磁体高的耐腐蚀性。 期望作为一种方法。 但是，在该方法中，为了使锌微粒均匀地分散在用于形成分散有锌微粒的耐蚀涂层的处理液中，必须使处理液为碱性。 因此，当将处理液施加到稀土永磁体的表面时，在磁体的表面上产生构成磁体的金属的氢氧化物，并且由这种金属氢氧化物制成的层形成磁体。 由于表面被覆盖的事实，难以形成具有优异粘附性的锌细颗粒分散耐蚀涂层，并且使用硅酸铝作为起始原料的涂层的柔韧性差。 存在诸如容易破裂和麻烦的废液处理的问题。\n\n  【0007】此外，在日本特开2000-011 143 949号公报（专利文献2）中，含有含硅化合物和平均粒径为1nm〜100nm的无机微粒。 已经提出了一种方法，其中将处理过的液体施加到稀土基永磁体的表面上，然后进行热处理以形成分散有无机细颗粒的耐腐蚀涂层。 该方法用于在稀土类永磁体的表面上使用硅有机化合物作为起始材料形成薄且致密的耐腐蚀涂层，并将具有特定平均粒径的无机细颗粒分散在涂层组分中。 这在膜形成过程中减轻了膜的内部应力，并防止了诸如裂缝之类的物理缺陷的出现。 还期望该方法为能够对稀土永磁体赋予高耐腐蚀性的方法。 然而，考虑到难以将纳米量级的无机细颗粒均匀地分散在水中，在处理液的制备中，主要使用有机溶剂如低级醇，并向其中添加少量的水。 由于必须在酸性条件下使硅有机化合物水解聚合而形成溶胶溶液并分散无机微粒，因此，制备的处理液为酸性，因此处理液为稀土类。 当施加到永磁体的表面上时，引起磁体腐蚀的问题，由于有机溶剂的挥发，处理液的组成容易波动，对环境有不利影响的问题，并且废液处理麻烦。 如果有，那就有问题。\n\n  【0008】因此，本发明是稀土类永久磁铁，其表面上具有分散有锌微粒的耐蚀涂层。\n\n 本发明的目的在于提供一种稳定且简单的上述制造方法，以这种方式制造的耐腐蚀稀土永磁体，适用于在各种形状的薄工件上形成涂膜的浸涂法以及该工件的涂膜形成方法。 去做。\n\n  【0009】发明公开\n\n  【0010】鉴于上述要点而做出的本发明的耐腐蚀稀土类永磁体的制造方法，如权利要求1的范围中所述，具有硅酸烷基酯的水解聚合反应产物，且平均粒径为1。  π！ 用含有〜50 m的锌细颗粒且ρH为6至8且粘度为100 cP或更小的水基处理溶液涂覆稀土永磁体的表面后，温度为250°（：〜 通过在400℃下进行热处理来形成分散有锌细颗粒的耐腐蚀涂层。权利要求2的制造方法与权利要求1的制造方法相同。 细的锌颗粒为鳞片形式。\n\n  【0011】此外，在根据权利要求3的制造方法中，在根据权利要求1的制造方法中，作为起始原料的硅酸烷基酯与水处理液中的锌细颗粒的总混合比为 其特征在于其为40重量％至90重量％（硅酸烷基酯转化为Si 02）。\n\n  【0012】此外，在根据权利要求4的制造方法中，在根据权利要求1的制造方法中，作为起始原料的硅酸烷基酯与水性处理液中的锌细颗粒的混合比为 其特征在于为1∶1至1∶19（重量比：硅酸烷基酯总计为Si〇2）。\n\n  【0013】此外，根据权利要求5所述的制造方法，其特征在于，在根据权利要求1所述的制造方法中，将有机分散剂添加到所述水性处理液中。\n\n  【0014】根据权利要求6的制造方法，是根据权利要求1所述的制造方法，其中，分散有锌微粒的耐腐蚀涂层的J3厚度为1m至50m。 特色功能。\n\n  【0015】根据权利要求7的制造方法，其特征在于，在根据权利要求1的制造方法中，其他无机细颗粒进一步分散在分散有锌细颗粒的耐腐蚀涂层中。  ..\n\n  【0016】此外，权利要求8所述的制造方法是权利要求1所述的制造方法。\n\n 该方法的特征在于，通过浸涂法将水性处理液涂布在稀土永磁体的表面上。\n\n  【0017】此外，根据权利要求9的制造方法是根据权利要求8的制造方法，其中使用具有300cP至600cP的粘度的水性处理液。 它的特点是表演。\n\n  【0018】此外，在根据权利要求10的制造方法中，在根据权利要求8的制造方法中，使用了可绕着竖直方向的中心轴旋转的旋转基座的大致外周端。 多个稀土基永磁体被保持在该部件上，并且将容纳稀土基永磁体的旋转基座浸入水基处理液罐中，以将水基处理液浸涂并涂覆在稀土基永磁体上。 其特点是浸涂法是通过从内部除去水处理液并旋转旋转的基座以旋转掉附着在稀土永磁体上的多余的水处理液而进行的。\n\n  【0019】此外，在根据权利要求11的制造方法中，在根据权利要求10的制造方法中，在所述旋转基座的大致外周端上设置有多个稀土类永磁体。 其特征在于被保持为环形。\n\n  【0020】权利要求12所述的制造方法，其特征在于，在权利要求10所述的制造方法中，所述稀土类永磁体是薄磁体。\n\n  【0021】根据权利要求13所述的制造方法，是根据权利要求12所述的制造方法，其中，所述薄磁体的最宽表面相对于所述旋转基座的径向大致平坦。 它的特点是连续保持。\n\n  【0022】根据权利要求14所述的制造方法，是根据权利要求13所述的制造方法，其中，当将多个薄磁铁安装在所述旋转台座的大致外周端时，安装多个薄磁体。 特殊之处在于，将磁体设置为大致环形，使得每个磁体的最宽表面在分离状态下基本平行于旋转基座的径向。\n\n  【0023】根据权利要求15所述的制造方法，是根据权利要求12所述的制造方法，其中，所述薄磁体具有平板形状，环形或弧形。 并具有特点。\n\n  【0024】此外，权利要求16所述的制造方法是权利要求14所述的制造方法。\n\n 在该方法中，在进行浸涂之后，从旋转基座上取下仍然放置有薄磁铁的涂装夹具，并在放置在任何地方的薄磁铁上进行热处理。 表征。\n\n  【0025】此外，根据本发明的稀土永磁体，如权利要求17所述，在由硅酸烷基酯制成的涂料组分中使用平均粒径为1m至50m的锌。 其特征在于具有耐腐蚀涂层，其中微粒分散在表面上。\n\n  【0026】此外，权利要求18所述的稀土类永磁体是权利要求17所述的稀土类永磁体，其中，所述耐腐蚀涂层中的锌微粒的含量为50重量％〜20重量％。 其特征在于为95重量％。\n\n  【0027】根据权利要求19所述的稀土类永磁体是根据权利要求17所述的稀土类永磁体，其中锌从所述磁体的表面扩散到内部。 并具有特点。\n\n  【0028】权利要求20所述的稀土类永磁体是通过权利要求1所述的制造方法制造的权利要求17所述的稀土类永磁体。 表征。\n\n  【0029】此外，如权利要求21所述，本发明的工件的浸渍旋涂方法是可绕以垂直方向的中心轴为旋转轴的旋转台座的大致径向外周端部。 固定多个工件，然后将旋转基座浸入到涂料槽中，以将涂料浸入工件中，然后从液体中移出并旋转旋转基座，以使多余的涂料粘附到工件上。 它的特点是离心甩开。 \n\n【0030】此外，根据本发明的在工件上形成涂膜的方法，如权利要求22所述，所述工件形成在可绕竖直方向上的中心轴旋转的旋转基座的大致外周端部上。 安装时，请使用可将多个工件设置为大致环形且每个工件彼此分离的涂覆夹具。 将涂料浸入涂料中后，将其从液体中取出，旋转底座以离心分离掉附着在工件上的多余涂料，并在安装工件时旋转涂布夹具。 其特征在于，如果需要，可以将其从基座上移开，并且可以将在任何位置涂覆在涂层夹具中的工件干燥。\n\n  【0031】根据本发明，稀土基永磁体在其表面上具有分散有锌细颗粒的耐腐蚀涂层\n\n 本发明提供了一种稳定且简单的上述制造方法，以此方式制造的耐腐蚀稀土永磁体，适用于在各种形状的薄工件上形成涂膜的浸涂法以及该工件的涂膜形成方法。 附图的简要说明\n\n  【0032】图1是根据本发明的用于工件的浸涂法的示例的示意性工艺图。 图2是表示将多个平板状的工件保持在本发明的旋转台座的大致外周端部上的状态的一例的示意图。\n\n  【0033】图3是表示将多个环状的工件保持在本发明的旋转基座的大致外周端部上的状态的一例的示意图。\n\n  【0034】图4是本发明的涂覆夹具的示例的示意性透视图。\n\n  【0035】图5是涂覆夹具的示意图，其中设置了本发明的多个平板状工件。 图6是表示在旋转台座的大致外周端安装有设置有多个平板状的工件的本发明的涂布夹具的状态的一例的示意图。\n\n  【0036】图7是实施例4中的EPMA二次电子图像。\n\n  【0037】图8是相同的锌X射线图像。\n\n  【0038】图9显示了铁质X射线图像。 实施本发明的最佳模式\n\n  【0039】在本发明中，分散有锌微粒的耐腐蚀涂层的pH为6至8，其包含硅酸烷基酯和锌微粒的水解解聚反应产物，该锌锌微粒的平均粒径为1μm至50m。 它是通过将粘度为100 cP或更低的水性处理液施加到稀土永磁体的表面上，然后在250°C至400°C的温度下进行热处理而形成的。 这样形成的分散有锌微粒的耐蚀涂层使稀土永磁体具有高耐蚀性，并且由于锌从磁体主体的表面扩散到内部而具有优异的粘附性。\n\n  【0040】硅酸烷基酯的实例包括由通式表示的那些：S inO（n—1（OR）（2 n +2）。 式中，R为烷基，其实例包括具有1-4个碳原子的低级烷基，例如甲基，乙基，丙基和丁基。\n\n 然而，其中，乙基价格便宜，没有毒性，并且易于处理。\n\n  【0041】（硅酸乙酯）是优选的。 另外，n为1以上的整数，但是为了形成致密的膜，n优选为10以下的整数。\n\n  【0042】此外，作为锌微粒，使用平均粒径为1m〜50m的锌微粒。 这是因为，当平均粒径小于1m时，锌微粒会在水性处理液中引起二次凝集，而当平均粒径大于5O ^ m时，水性处理液中的平均粒径大。 这是因为氧化锌的细颗粒可能沉降，并且在任何情况下，都可能难以制备其中具有优异的储存稳定性的氧化锌的细颗粒均匀分散的水性处理液。 锌细颗粒的平均粒径为2！  〜30 m是理想的，5 m〜20 / im是更理想的。 锌细粒可以具有任何形状，但是为了防止在分散有锌细粒的耐腐蚀涂层中出现针孔，有利的是将锌细粒紧密地堆积在涂层组分中。 此外，为了使亚尖锐度从磁体的表面分散到内部，锌细粒相对于磁体的接触面积较大是有利的。 因此，从该观点出发，锌微粒优选为鳞片状。 锌微粒为鳞片状时，锌微粒的平均粒径是指平均主轴。\n\n  【0043】作为起始原料的硅酸烷基酯与水处理液中的锌细颗粒的总混合比为40重量％至90重量％（硅酸烷基酯被转换为Si〇2）。 期望含量为60重量％至80重量％。 如果总混合比小于40重量％，则为了获得具有表现出足够性能的膜厚的锌细颗粒分散的耐腐蚀涂层，制造步骤的数目可能必须比必要的增加更多。  ％，可能会影响水性处理液的储存稳定性。\n\n  【0044】作为起始原料的硅酸烷基酯与水处理液中的锌细粒的混合比使得所形成的分散有锌细粒的耐腐蚀涂层的锌细粒含量为50重量％至95重量％。 如上所述，该比例优选为1：1至1：1（重量比：硅酸烷基酯被转化为S i 02），并且更优选为1：3至1：1-10。 如果在所形成的分散有锌微粒的耐腐蚀涂层中锌微粒的含量小于50重量％，则充分表现出将锌微粒分散在J3成分中的效果。\n\n 另一方面，它可能不会挥发，而如果其含量大于95％（重量），则可能不能充分展现出以烷基硅酸盐为起始材料的作为耐腐蚀涂层的原始性能。\n\n  【0045】如上述专利文献2中所述，当施加到稀土类永磁体的表面上的水基处理液的pH小于6时，将其pH定义为6至8。 另一方面，如果pH高于8，则可能引起磁体的腐蚀，并且如专利文献1所述，可能不会形成粘附性优异的分散有锌微粒的耐蚀涂层。\n\n  【0046】当水基处理液的粘度超过100cP时，将施加到稀土基永磁体表面的水基处理液的粘度定义为不大于100cP。 这是因为可能难以形成具有均匀厚度的分散有锌微粒的耐腐蚀涂层。\n\n  【0047】具有优异均质性的水基处理液的制备例如通过在酸性条件（pH约3至4）或碱性条件（pH 10至12）下水解硅酸烷基酯来进行。 在将平均粒径为1m至50m的锌细颗粒添加至进行分解缩聚反应的水溶液中之后，可以将pH调节至6至8，并且可以将粘度保持或调节至100cP以下。 期望使用（更优选粘度为50cP以下，更优选25cP以下）。 另外，当烷基硅酮在酸性条件下水解和聚合时，可以使用例如氢氧化钠调节pH。 当硅酸烷基酯在碱性条件下水解和聚合时，例如可以使用盐酸调节pH。\n\n  【0048】在制备水性处理液的阶段中硅酸烷基酯水解和聚合的原因是使形成的膜致密。 硅酸烷基酯的水解聚合反应不必一定要水解所有使用的烷基甲硅烷基基团，并且其一部分可以进行水解聚合反应。 水解聚合反应的程度可以通过酸或碱的添加量和用作引起水解聚合反应的介质的水的量来调节。 如果烷基甲硅烷基的水解和聚合反应的程度高，则水溶液的粘度可能超过100cP。 即使粘度一旦超过100cP，也可以通过添加温水来降低粘度，但是比水性处理液更好。\n\n 为了确保均匀性，如果在水解聚合反应期间水溶液的粘度可能超过100 cP，请适当添加水以将粘度调节至100 cP。 最好不要过去。 另外，当期望使水基处理液的表面张力适合于便于形成具有期望膜厚的膜的目的时，例如，纤维素基增稠剂（羟基 可以通过添加例如水溶性纤维素口酯如tyl纤维素，甲基纤维素，甲基羟丙基纤维素，乙基羟乙基纤维素和甲基乙基纤维素来调节粘度。 它可以。 如果为了增加要形成的膜的膜厚而将水性处理液的粘度增加到100 cP或更高，则一旦准备好增加粘度就向水性处理液中添加增稠剂。 希望通过提高它来做到这一点。\n\n  【0049】当将锌细颗粒添加到通过使硅酸烷基酯进行水解聚合反应而获得的水溶液中时，期望使用有机分散剂以使锌细颗粒均匀地分散在水性处理液中。 通过例如将锌细颗粒添加到含有有机分散剂的水中来将有机分散剂添加到水性处理液中，以制备锌细颗粒分散的水性介质，其中锌细颗粒均匀地分散。 可以通过将分散有细颗粒的水性介质和通过使烷基二氧化硅链进行水解聚合反应而获得的水溶液混合来进行。 作为有机分散介质，阴离子型分散介质（脂肪族多元羧酸，聚酯聚酯羧酸盐，高分子量聚酯多元胺盐，高分子量多元羧酸长链胺盐等），非离子性 分散介质（聚氧乙烯烷基醚和脱水山梨醇酯等羧酸盐，磺酸盐和铵盐），聚合物分散介质（水溶性环氧羧酸盐，磺酸盐和铵盐的羧酸盐，苯乙烯等） 考虑到与锌颗粒的亲和力和成本，优选使用单丙烯酸共聚物，Nikai等。\n\n  【0050】请注意，施加到稀土永磁体表面的水性处理液的粘度与具有足以表现出足够特性的膜厚的锌细颗粒分散耐腐蚀涂层的粘度相同，而无需重复过多的制造过程。 为了形成，期望为5cP以上。\n\n  【0051】当将水基处理液施加到稀土永磁体的表面时，浸涂法，喷涂法，旋涂法，浸涂-旋涂法。 \n\n可以采用。 为了提高与形成在稀土永磁体的表面上的分散有锌细颗粒的耐腐蚀涂层的粘附性，可以在施加水性处理液之前对磁体进行砂磨处理或酸洗处理。 好。\n\n  【0052】期望通过浸涂法将水性处理液涂布到稀土永磁体的表面上，以形成水性处理液的更均匀的涂膜。 特别地，多个稀土类永磁体被保持在可绕竖直中心轴旋转的旋转基座的大致外周边缘上，并且，保持稀土类永磁体的旋转基座用作水性处理液罐。 将稀土基永磁体与水基处理液一起浸入，从溶液中取出，旋转底座，然后在稀土永磁体上甩掉多余的水基处理液，以将其离心分离。 旋涂是理想的。\n\n  【0053】作为在薄工件的表面上形成例如具有约1O im的膜厚度的薄涂膜的方法，通过将工件浸入油漆浴中然后将其浸入，然后 可以采用浸涂法，其中将涂料从机器中取出并高速旋转以甩掉多余的涂料。 作为迄今为止已知的薄浸涂法，例如，在日本特开平7-21088号公报中提出了一种作为光盘的保护膜涂布法的方法。 在这种方法中，将多个基板以规则的间隔垂直放置在水平主轴上，并在围绕主轴低速旋转的同时，将除基板中心部分以外的部分浸入保护膜材料中以施加该材料， 这是因为将物料拉起并最终高速旋转以甩掉物料。 另外，在日本特开平3-86271号公报中，使用吊架将物品的涂布面（平坦面）保持为大致水平，使该吊架和被涂布物通过整个物品的重心。 已经提出了一种浸涂法，其特征在于包括通过绕垂直线作为旋转轴旋转涂料来离心掉涂料的步骤。 此外，在日本未审查专利申请公开第2000-0 165 4 56号中，使具有多个凹槽的一对保持构件与凹槽彼此面对，并且相对的凹槽保持晶片的外围。 已经提出了一种方法，其中通过旋转载体使在载体中保持的多个晶片上的载体旋转并干燥，从而通过使用晶片载体使其凹槽基本上沿旋转加速度方向取向。\n\n w ^\n\n  【0054】当对大量薄工件采用浸涂旋涂法时，无论耙子的形状如何，都可以在所有工件上实现均匀涂层而不会引起膜厚变化。 理想的。 但是，考虑到这一点，上述专利文献中描述的每种方法或多或少具有缺点。 具体地说，在日本专利申请特开No.7-201 088中描述的方法的缺点在于，由于必须将工件保持在其中心，所以该方法只能应用于环形工件。  .. 此外，在这种方法中，水平主轴与环形工件的内周表面接触，并且工件本身由于两者之间产生的摩擦力而旋转，因此在工件和主轴之间产生的摩擦力会发生变化。 如果这样，则工件的旋转速度将发生变化，并且如果可能无法对所有工件进行均匀的涂层涂覆，则很难高速旋转油墨。 例如，当涂覆粘度大于500cP的工件时，存在的缺点是过度粘附的涂料可能不能被充分地甩掉。 另外，在日本专利公开No.3-8 6 2 71中描述的方法中，由于工件的平面几乎保持水平，因此存在粘附在上表面和下表面之间的涂料量不同的可能性。 有缺点。 此外，在日本专利特开No.2000-0 166456中描述的方法中，由于工件的一个平面面向旋转轴被保持，因此每个工件的旋转速度根据保持位置而变化。 由于它们是不同的，因此存在无法均匀涂覆所有工件的风险。\n\n  【0055】然而，根据本发明提出的浸涂法，即使在大量薄工件上也可以形成均匀的涂膜而不会引起膜厚的变化。\n\n  【0056】以下，根据需要参照附图对本发明提出的浸涂法进行说明，但本发明提出的浸涂法应理解为限于以下说明。 这是不会做的事情。 在本发明中提出的双链骨架涂覆方法可以应用于任何形状的涂覆，而不受工件形状的限制，但是特别是对于诸如平板，环形或弓形的薄工件。 因此，在下面的描述中，将以将本发明的方法应用于平坦工件和环件工件的涂覆的情况为例进行描述。\n\n w ^\n\n  【0057】\n\n  【0058】图1是本发明提出的浸涂法的一个例子的示意性工序图。  （A）首先，在可绕铅垂方向的中心轴1旋转的旋转台​​座2的大致外周缘形成有多个平板状的耙子X。 每个最宽的平面（平面）保持为大致环形，从而基本平行于径向。  （b）接着，通过气缸3使涂料箱4上升，将保持耙子X的旋转台座2浸入涂料箱4内，进行工件X的浸涂。  （c）接着，通过气缸3使涂料箱4下降，并从液体中取出旋转基座2。  （d）最后，以中心轴1为旋转轴（最好至少使旋转方向反转一次）使带有马达5的旋转台座2旋转，以去除附着在工件X的平面上的多余涂料。 离心机关闭。 根据该方法，即使涂料具有相对较高的粘度（例如，粘度超过200cP），也可以调节旋转基座2的尺寸并控制旋转速度。 因此，由于可以自由地调节附着在工件X的平坦表面上的涂料的量，因此也可以自由地调节所形成的涂膜的膜厚。\n\n  【0059】期望旋转基座2的基座表面具有网眼形状，从而不会积聚涂料。\n\n  【0060】图2（a）示出了多个平板工件X以大致环形的形状保持在旋转基座2的外周边缘上，使得它们的各个平面基本平行于径向方向。 图2是完成状态的一例的示意性局部立体图。 图2（b）是从上方观察保持有岩石X的旋转基座2的图。 工件X被放置在放置在旋转基座2上的两个保持构件（优选地具有半圆形横截面的杆状）11上。 如图1所示，可以将工件X直接放置在旋转基座2上，但是通过采用这种放置方法，可以使工件X的底面上的放置标记最小化。 可以转换（参见图2（c））。\n\n  【0061】通过相对于保持构件11在垂直方向上设置的垫片12，将各个平板状工件X保持为彼此分离的状态。 垫片12还具有防止工件X滚动的功能。 相邻的垫片12和12之间的距离优选地大于工件X的厚度。 工件两侧的垫片X 1 2\n\n 这是因为当它们彼此接触时，接触标记变得明显。 另外，期望间隔件12具有圆形的横截面。 这是因为通过旋转旋转基座2可以使在工件X的平面上产生的接触痕迹最小化。\n\n  【0062】在步骤（d）中，当通过电动机5使旋转基座2以中心轴1为旋转轴旋转，以旋转掉附着在平坦工件X的平坦表面上的涂料时，  X由于离心力而趋向于放射状，但是固定在旋转台座2上并以未图示的方式水平配置的离心冲击控制棒1 3抵接于地震X的外侧。 并且具有限制工件X向径向突出的功能。 此外，相对于离心突起限制杆13沿旋转轴方向设置的间隔件14具有在离心分流时限制工件X的移动的功能。\n\n  【0063】在图3（a）中，多个环形工件Y以大致环形的形状被保持在旋转基座2的大致外周端上，使得它们的各自的平面基本平行于径向方向。 图2是状态的一例的示意性局部立体图。 工件Y通过其环部悬挂并保持在水平悬挂构件15上，该水平悬挂构件15通过未示出的构造固定在旋转基座2上。 水平悬挂构件15优选地是具有圆形横截面的杆。 此外，期望水平悬挂构件15的悬挂有工件Y的部分例如被切成V形（见图3（b））。 通过水平悬挂构件15的这种构造，可以使在耙子Y的环部上产生的悬挂痕迹最小化。\n\n  【0064】当在多个薄工件上进行浸涂时，如图1至3所示，每个薄工件都可以直接固定在旋转基座上。 当将多个薄工件安装在旋转基座的外周边缘上时，它们以圆形形状彼此分离，使得薄工件的最宽表面大致平行于旋转基座的径向。 您可以使用可以设置的涂层夹具。\n\n  【0065】图4示出，当安装在旋转基座的外周边缘上时，多个平板形工件彼此分离，并且它们的平面基本平行于旋转基座的径向。 图2是可以如上所述地设置成大致环形的涂覆夹具的示例的示意性透视图。 涂覆夹具Z在水平方向上平行地布置，以保持多个平板状工件X，使得其平面在各个工件彼此分离的状态下基本彼此平行。 用垫片22和固定有工件X的夹具夹持两个保持杆21。\n\n w ^\n\n  【0066】为了防止工件X安装在旋转基座的外周边缘上并且旋转基座旋转时由于离心力而径向弹出，使其与工件X的外侧表面接触。 它至少具有带有间隔件24的离心弹出控制杆23，该间隔件在水平方向上平行布置。 为了将各个工件X保持为彼此分离的平面，使它们的平面与铅垂方向大致平行，并且为了使工件X与保持杆21之间具有空间而保持工件X。 它还具有两个杆状构件25，其具有平行于保持杆21布置的间隔件26。 当夹具上下颠倒时，用于将工件X保持在上级的保持杆21用作杆状构件25。 \n\n【0067】图5是其中设置有多个薄工件X的涂覆夹具Z的示意性正视图（a）和D-D截面图（b）。\n\n  【0068】保持杆21和杆状构件25优选具有圆形的截面。 这是因为可以使在薄工件X的下表面上出现的放置痕迹最小化。 此外，理想的是，离心突起限制杆23也具有圆形截面。 这是因为可以使在薄工件X的外侧表面上产生的接触痕迹最小化。 另外，期望隔离物22以及隔离物24和隔离物26也具有圆形的横截面。 这是因为可以使在薄工件X的平坦表面上产生的接触痕迹最小化。 注意，保持杆21和杆状构件25不必必须具有两件，而可以具有一件。 图4所示的涂布夹具Z例如如下使用。 图6是通过已知的可拆卸的安装装置将设置有多个平板状工件X的涂覆夹具Z安装在旋转台座2的大致外周端上的状态的示例的局部平面示意图。 这是一个数字。 根据图1所示的示意性工艺图，涂料桶4由气缸2提起，并且将配备有工件X设置的涂覆夹具Z的旋转基座2浸入涂料桶4中，以将涂料施涂到工件X上。 进行浸涂。 接下来，通过气缸3使涂料箱4下降，并从液体中取出旋转基座2。 最后，通过电动机5使旋转台座2绕中心轴1旋转，以旋出过度附着在工件X的平面上的涂料，从而完成浸涂。 经过任意时间后，将仍放置有工件X的涂覆夹具Z从旋转基座2上移开，并将仍放置在涂覆夹具Z上的工件X在所需位置干燥（自然 干的\n\n 或通过加热干燥。 此后，将仍放置有工件X的涂覆夹具Z上下翻转并再次安装在旋转基座2上，并且以与上述相同的过程再次进行浸涂。 以此方式，在工件X上出现的放置标记和接触标记的位置在第一涂层和第二涂层之间变化，因此第二涂层允许完成第一涂层。 由于X上产生的涂层标记和接触标记也会被涂漆，因此可以更均匀地喷涂工件X。 之后，将具有工件X的涂布夹具Z从旋转台座2上取下，并且仍然放置在涂布夹具Z上的清洁夹具Z在任何地方进行干燥（自然干燥或加热）。 通过进行干燥，即使在大量的作业中也可以有效地形成均匀的涂膜而不会引起膜厚偏差。\n\n  【0069】当通过浸涂法将水性处理液施加到稀土永磁体的表面时，请使用粘度为300cP至600cP的水性处理液。 可以形成更均匀的涂膜。 如上所述，期望的是，具有这样粘度的水性处理液通过向曾经制备的水性处理液中添加纤维素类增稠剂等而使粘度提高。 理想的是将其加入以使其在含水处理液中的含量为1-2％（重量）。\n\n  【0070】在表面上形成有水性处理液的被膜的稀土类永久磁铁的热处理在250〜400℃下进行。 当在这些温度条件下进行热处理时，在成膜过程中，含水处理液中所含的锌微粒中的一些从磁体的表面适当地扩散到内部。 形成细颗粒分散的耐腐蚀涂层。 如果热处理温度低于250℃，则不仅锌不能充分扩散，而且水也不能充分蒸发而残留在稀土永磁体的表面上。 另一方面，如果温度高于400℃，则锌的过度扩散会不利地影响磁体特性。 热处理时间优选为例如10分钟至120分钟。 将在其表面上涂覆有水基处理液的稀土类永磁体在100°C至170°C的温度下暂时干燥，然后进行热处理，以获得更均匀的分散锌颗粒的耐腐蚀涂层。 可以形成。 分散有锌微粒的耐腐蚀涂层优选形成为具有1m至50μm，更优选5m至15m的膜厚度。\n\n 是。 如果膜厚小于1m，则不能充分表现出分散有锌细颗粒的耐蚀涂层的特性，而如果膜厚超过50μm，则将充分确保稀土永磁体的有效体积。 这是因为存在无法实现的风险。\n\n  【0071】其他无机细颗粒可以进一步分散在分散有锌细颗粒的耐腐蚀涂层中。 作为无机细颗粒，例如，可以列举出诸如铝，锡，锰，镁，钛和镍之类的潜在贱金属如锌的细颗粒。 例如，通过将铝细颗粒与锌细颗粒一起分散，可以有效地防止由于锌细颗粒的腐蚀而产生白锈（碱性碳酸锌）。 此外，为了进一步减少涂层中可能出现的针孔并进一步提高涂层的耐腐蚀性，以及涂层中的锌细颗粒，A 12〇3和T i〇2和 诸如S i 02和My power之类的氧化物微粒可能会分散。 当其他无机细粒与锌细粒一起分散时，形成的耐腐蚀涂层中锌细粒和其他无机细粒的总含量优选为95重量％以下。\n\n  【0072】以N d -F e -B系统永磁体为代表的R-F e-B系统永磁体和以Sm-Fe-N系统永磁体为代表的稀土系统永磁体的R-Fe。  —包括已知的稀土基永磁体，例如N基永磁体。 其中，基于R-Fe-B的永磁体是期望的，因为它们具有特别高的磁性能并且在批量生产和经济效率方面优异。 稀土类永磁体可以是烧结磁体或池磁体。\n\n  【0073】稀土永磁体中的稀土元素（R）为Nd，Pr，Dy，Ho，Tb，Sm或La，Ce，Gd，Er，Eu中的至少一种， 包含Tm，Yb，Lu和Y中至少之一的那些是期望的。\n\n  【0074】通常，R的一种就足够了，但实际上，为了方便使用，可以使用两种或多种的混合物（例如，稀土金属和Zidymium）。\n\n  【0075】此外，Al，Ti，V，Cr，Mn，Bi，Nb，Ta，Mo，W，Sb，Ge，Sn，Zr，Ni，Si，Zn，Hf，G 通过添加a中的至少一个，可以改善矫顽力和退磁曲线的矩形度，改善可制造性，并降低成本。 也可以通过用Co代替F e的一部分来获得。\n\n 可以改善温度特性而不损害磁体的磁特性。 例\n\n  【0076】以下，将参考实施例和比较例更详细地描述本发明，但是本发明不应解释为限于此。\n\n  【0077】示例1：\n\n  【0078】作为起始原料，将电解铁，硼铁和作为R的Nd混合到所需的磁体组成中，熔融熔化后，通过机械粉碎方法粗粉碎，然后细粉碎，得到3 / 获得m〜l 0 m的细粉后，在10 k〇e的磁场中成型，并在氩气氛中在1100°C下烧结1小时，得到了烧结体。 在600℃下进行600小时的时效处理2小时，然后使用从组成为15Nd-7B-78Fe的磁体切出的36mmX32mmX3mm的平板烧结磁体试验片进行以下实验。 我去了。\n\n  【0079】A.添加硅酸乙酯40（硅酸乙酯是含有40重量％的Si〇2当量的无色透明液体），并用1N盐酸将pH调节至3。 进行水解聚合反应以制备包含20重量％（换算成Si 02）的硅酸乙酯作为原料的水溶液。 通过将这种水溶液，有机分散剂（商品名：Solspers S 20000：由Abyssia制造）和平均主轴长为20 m（约20 mx 20 mx 1 ^ m）的鳞片状锌细颗粒制成的氧化锌。 混合分散有细颗粒的水性介质，充分搅拌并用1N氢氧化钠调节pH至7，作为起始原料的硅酸乙酯和锌细颗粒的总配比为70重量％。 在02的转化率下），硅酸乙酯作为起始原料，锌细颗粒和有机分散剂的混合比为9.9∶90∶0.1。\n\n  【0080】（重量比：硅酸乙酯为Si 02当量），得到粘度为15cP的水性处理液。\n\n  【0081】B.将乙醇进行超声波清洗（脱脂处理）并自然干燥15分钟，将其浸入上述水性处理液中。 将从水性处理溶液中取出的试验片保存在离心干燥机中，并以300 rpm摇动30秒以除去附着在试验片表面上的多余的水性处理液，然后在100℃X 5下进行。 暂时在大气中几分钟\n\n 干的 将通过暂时干燥涂布在表面上的水性处理液而获得的试验片再次浸入水性处理液中。 以与上述相同的方式从水基处理液中取出附着于试验片表面的多余的水基处理液后，相对于在表面形成有水基处理液的被膜的试验片320°。 将CX在大气中热处理10分钟，以在测试件的表面上形成锌细颗粒分散的耐腐蚀涂层，该锌细颗粒含量为90重量％。 所形成的分散有锌微粒的耐腐蚀涂层的厚度为约10μm/ m（从截面观察）。\n\n  【0082】C。通过在表面上分散有锌细颗粒的耐蚀涂层的10个试验片上在35℃下将5％盐水喷500小时来进行耐蚀性试验。 没有变化（加注）。\n\n  【0083】示例2： \n\n【0084】以与实施例1相同的方式制备的，含有20重量％（按Si〇2当量）硅酸乙酯作为起始原料的水溶液和有机分散剂（商品名）  （Sols Perth S 20000：由Abyssia制造），平均主轴线为20 m的锌鳞颗粒，平均粒径为3的粒状铝颗粒（粗粒度20 imX 20 mX 1 ur）和平均粒径为3的锌被添加到水中。 混合铝颗粒分散的水介质，用1N氢氧化钠充分混合并调节pH值至7.乙基硅油为起始原料，锌颗粒和铝颗粒的总混合比例为70％重量（乙基硅 1以S i 02计算，作为原料的硅酸乙酯，锌颗粒，铝颗粒和有机分散剂的混合比为9.9∶60∶30∶0.1（重量）。 比例：硅烷基为SI 02（换算），得到粘度为13cP的水性处理液。 使用该水性处理液，以与实施例1相同的方式，将锌微粒含量为60wt％，铝微粒含量为30wt％的锌-铝微粒分散体耐蚀性以与实施例1相同的方式施加至试验片的表面。 形成膜。 所形成的分散有锌铝微粒的耐腐蚀涂层的厚度为约10m（从截面观察）。 对分散在如此制得的表面上的锌-铝细颗粒的耐腐蚀性试验进行了与实施例1相同的耐腐蚀性试验，但是在试验后未观察到外观变化。 它是\n\n  【0085】示例3：\n\n 以与实施例1相同的方式制备的，含有20重量％（换算为Si〇2）硅酸乙酯作为起始原料和有机分散剂（商品名Solspace）的水溶液 S 20000：由Abyssia制造），平均长轴为20 m的鳞片状锌细颗粒（近似尺寸为20 iimx 20πι1），平均粒径为3的粒状铝细颗粒和平均粒径为3 m的粒状锡细颗粒。 将分散在水中的锌-铝-锡细颗粒与水介质混合，充分搅拌，并用1N氢氧化钠将pH调节至7，并混合作为起始原料的硅酸乙酯，锌细颗粒和铝细颗粒。 氧化锡和锡细颗粒的总混合比例为70％重量（硅酸乙酯按S io2计算），作为原料的硅酸乙酯，锌细颗粒，铝细颗粒，锡细颗粒和有机分散剂的混合比例为9％。  .9：55：25：10：0.1（重量比：将硅酸乙酯转化为Si（〇〇〇〇〇）），得到粘度为18cP的水性处理液。 使用该水性处理溶液，以与实施例1相同的方式获得与实施例1相同的试件表面，其中锌细颗粒含量为55重量％，铝细颗粒含量为25重量％，锡细颗粒含量为10重量％。 形成％锌/铝/锡细颗粒分散的耐腐蚀涂层。 形成的分散有锌-铝-锡细颗粒的耐腐蚀涂层的厚度为约10m（从横截面观察）。 对如此制作的表面具有分散有锌铝锡微粒子的耐蚀涂层的10个试验片，进行了与实施例1相同的耐蚀性试验，但试验后，外观发生了变化。 什么都没有。\n\n  【0086】比较例1：\n\n  【0087】A.S〇2ZNa2制备pH为4.0且pH为12的硅酸钠水溶液。 将该水溶液，有机分散剂（商品名：Solus-S S 20000：Abyssia制造）和平均长轴为20im（粗大尺寸20mx 20mx 1 rn）的鳞片状的锌微粒添加到水中来制备。 混合分散有锌微粒的水性介质，并充分搅拌，以确保作为原料的海藻酸钠硅酸盐和锌微粒的总含量为70％重量（碱式硅酸钠按S i 02计算）。 海藻酸钠，锌细颗粒和有机分散剂作为起始原料的混合比为9.9：90：0.1（重量比：碱式硅酸钠为S i 02 获得（转化）的处理液。\n\n B.用乙醇进行超声波清洗（脱脂处理）并自然干燥15分钟。将与实施例1相同的试验片浸入上述处理液中。 从处理溶液中取出的试验片被放置在离心干燥机中，以300rpm摇动30秒以除去附着在试验片表面上的多余的处理液，然后在空气中于100℃保持5分钟。 暂时干燥了。 将通过暂时干燥如此涂布在表面上的处理液而获得的测试片再次浸入处理液中。 以与上述相同的方式除去从处理液中取出的附着在试验片的表面上的多余的处理液后，将在表面形成有处理液的涂膜的试验片在150℃的空气中暴露30分钟。 在内部进行热处理，以在试验片的表面上形成锌细颗粒含量为90重量％的分散了锌细颗粒的耐腐蚀涂层。 形成的锌细颗粒分散耐腐蚀涂层的厚度为约10m（从横截面观察）。\n\n  【0088】C。在200小时的时间，在表面上产生了分散有锌细颗粒的耐蚀涂层的10个试验片上，在35℃下将5％盐水喷雾500小时进行耐蚀性试验。 有7个外观变化（增加）。\n\n  【0089】示例4：\n\n  【0090】将2 wt％的环氧树脂添加到平均主轴线150 m的合金粉末中，该合金粉末通过淬火合金方法制成，其成分为Nd：12 at％，Fe：77 at％，B：6 at％，Co：5 at％。  ％在686 NZmm2的压力下捏合，捏合，压缩模制，然后在150°C下固化1小时，以生产出外径为3 OmmX内径为28mmX长度为4mm的环形粘结磁体测试件。 使用该实施例进行与实施例1类似的实验，并且在试验片的表面上形成锌细颗粒含量为90重量％的分散了锌细颗粒的耐腐蚀涂层。 所形成的分散有锌细颗粒的耐腐蚀涂层的厚度为约10m（从截面观察）。 另外，使用EPMA（电子束微量分析仪：Shimadzu Corporation制造，EP M810），在表面上具有分散有锌细颗粒的耐腐蚀涂层的试验片的表面附近观察到截面。 图7显示了二次电子图像，图8显示了锌X射线图像，图9显示了铁X射线图像。 从图7至图9发现，锌从试件主体的表面扩散到内部。 没有观察到由于锌扩散而引起的试验片主体的磁性能下降。 耐腐蚀性试验是通过在35℃下在10个具有锌微粒分散耐腐蚀性的试验片上在35℃下喷5％盐水500小时来进行的。\n\n 但是，测试后外观（饮用）没有变化。\n\n  【0091】示例5：\n\n  【0092】向实施例1中制备的水性处理液中加入羟乙基纤维素作为增稠剂，使得其浓度为1重量％，并且将粘度调节为450cP。 在图4所示的涂布夹具上，设置了与实施例1相同的，用乙醇进行超声波清洗（脱脂），干燥15分钟后的大量的试验片，在该涂层上设置了试验片。 如图6所示，将夹具安装在旋转基座的外周边缘上，并且使用如图1所示的上述处理溶液进行浸涂（离心甩干为30O rpm。  30秒）。 之后，从旋转底座上取下带有测试件的涂层夹具，然后将其暂时置于130°C x 10分钟的空气中干燥130分钟，然后将测试件置于涂层夹具上。 将形成有水性处理液的涂膜的试验片在大气中在350℃下热处理30分钟。 接下来，将测试夹具倒置的情况下翻转涂层夹具，然后将其再次安装在旋转基座上，并按照上述相同的步骤进行浸涂，临时干燥和热处理， 在表面上形成锌细颗粒含量为90重量％的分散了锌细颗粒的耐腐蚀涂层。 所形成的分散有锌微粒的耐腐蚀涂层的厚度为10μm/ m（从截面观察）。 在以这种方式生产的表面上具有分散有锌细颗粒的耐腐蚀涂层的10个试验片上进行了与实施例1相同的耐腐蚀性试验，但是在试验之后，出现了外观变化（突起）。 什么都没有。\n\n  【0093】示例6：\n\n  【0094】将羟乙基纤维素作为增稠剂添加至实施例2中制备的水性处理液中，使得其浓度为1重量％，并且将粘度调节至440cP。 使用该处理液，与实施例1同样地在与实施例1相同的试验片的表面上进行乙醇的超声波清洗（脱脂处理）并干燥15分钟。 形成了分散有锌铝微粒的耐腐蚀涂层，该涂料的量为60重量％，铝微粒含量为30重量％。 所形成的分散有锌铝微粒的耐腐蚀涂层的厚度为10m（从截面观察）。 在如此制作的表面上具有分散有锌铝微粒子的耐蚀涂层的试验片的1Q上，进行与实施例1相同的耐腐蚀性试验，但试验后，外观（皱纹）发生变化。\n\n 什么都没有。\n\n  【0095】示例7：\n\n  【0096】将羟乙基纤维素作为增稠剂添加到实施例3中制备的水性处理液中，使得其浓度为1重量％，并且将粘度调节为460cP。 使用该处理液，以与实施例5相同的方式，以与实施例5相同的方式，在与实施例1相同的试验片的表面上，进行乙醇的超声波清洗（脱脂处理）并干燥15分钟。 为55重量％，铝细颗粒的含量为25重量％，锡细颗粒的含量为25重量％。\n\n  【0097】形成10重量％的锌-铝-锡细颗粒分散的耐腐蚀涂层。 所形成的分散有锌铝锡微粒的耐腐蚀涂层的厚度为10m。\n\n  【0098】（从截面观察）。 在以这种方式生产的表面上具有分散有锌铝锡细颗粒的耐蚀涂层的10个试验片上进行了与实施例1相同的耐蚀性试验，但是在试验之后，外观（皱纹）有所变化。 我什么也没做。\n\n  【0099】示例8： \n\n【0100】含有以重量计（S i02）的乙基硅酮作为起始原料的水溶液，该水溶液以与实施例1相同的方式制备，并含有有机分散剂（商品名Sols）  （Perth S 20000：由Abyssia制造）和平均长轴为20 m的鳞片状锌颗粒（近似尺寸为20 m 20 m 1 ^ m）以及平均粒径为3 im和平均粒径为3 m的粒状铝颗粒。 混合分散有锡-铝-锡-氧化铝细颗粒的水基介质，该介质是通过将粒状锡颗粒和平均粒径为1 m的氧化铝细颗粒添加到水中，充分搅拌并用1N氢氧化钠将pH值调节到7来制备的。 作为起始原料的硅酸乙酯，锌细颗粒，铝细颗粒，锡细颗粒和铝细颗粒的总配比为70重量％（硅酸乙酯被转化为S i02）。 硅酸乙酯，锌细颗粒，铝细颗粒，锡细颗粒，氧化铝细颗粒和有机分散剂以9.9：55：25：8：2：0.1的比例混合（重量比：硅酸乙酯为S i 0 获得具有16cP的粘度（转换为2）的水基处理液。 将羟乙基纤维素作为增稠剂添加至该水性处理溶液中，使得浓度为1重量％，并且将粘度调节至465cP。 使用该处理液，与实施例1同样地在与实施例1相同的试验片的表面上进行乙醇的超声波清洗（脱脂处理），干燥15分钟，使其含有锌微粒。\n\n 形成分散有锌-铝-锡-氧化铝细颗粒的耐腐蚀涂层，其含量为55重量％，铝细颗粒含量为25重量％，锡细颗粒含量为8重量％，氧化铝细颗粒含量为2重量％。 做到了。 所形成的分散有锌铝锡氧化铝的微粒的耐腐蚀涂层的厚度为10m（从截面观察）。 对如此制作的表面上分散有锌-铝-锡-氧化铝细颗粒的耐蚀涂层的10个试验片进行与实施例1相同的耐蚀性试验。 没有人来。\n\n  【0101】比较例2：\n\n  【0102】将羟乙基纤维素作为增稠剂添加到比较例1中制备的处理液中，使得其浓度为1重量％，并且将粘度调节为420cP。 使用该处理液，在与实施例1相同的试验片的表面上用乙醇进行超声波清洗（脱脂处理）并干燥15分钟，并且临时干燥条件和热处理条件与比较例1相同。 除了采用上述以外，与实施例5同样地形成锌微粒含量为90重量％的锌微粒分散耐蚀涂层。 所形成的分散有锌微粒的耐腐蚀涂层的厚度为10m（从截面观察）。 当在如此制作的表面上具有分散有锌细颗粒的耐腐蚀涂层的10个试验片上进行与实施例1相同的耐腐蚀性试验时，在200小时时观察到外观变化（皱纹）。 有六个来了。 工业可用性\n\n  【0103】本发明适用于稳定且简单的在表面上具有分散有锌细颗粒的耐蚀涂层的稀土类永磁体的制造方法，以这种方式生产的耐腐蚀稀土类永磁体以及在各种形状的薄工件上形成涂膜的方法。 其可提供浸涂法和快速涂膜形成法，因此具有工业实用性。');
INSERT INTO `os_patent_instruction_text` VALUES (13007, 22836, '【0001】明細書 耐食性希土類系永久磁石の製造方法、 耐食性希土類系永久磁石、 ワークのディッ プスピンコーティング法およびワークの塗膜形成方法 技術分野\n\n【0002】本発明は、 亜鉛微粒子分散耐食性被膜を表面に有する希土類系永久磁石の安定 かつ簡易な製造方法、 こうして製造される耐食性希土類系永久磁石、 各種形状の 薄型ワークに対する塗膜形成に適したディップスピンコーティング法およびヮー クの塗膜形成方法に関する。 背景技術\n\n【0003】N d— F e— B系永久磁石に代表される R— F e— B系永久磁石や S m— F e 一 N系永久磁石に代表される R— F e— N系永久磁石などの希土類系永久磁石は、 資源的に豊富で安価な材料が用いられ、 かつ、 高い磁気特性を有していることか ら、 特に R— F e— B系永久磁石は今日様々な分野で使用されている。\n\n【0004】しかしながら、 希土類系永久磁石は反応性の高い希土類元素： Rを含むため、 大気中で酸化腐食されやすく、 何の表面処理をも行わずに使用した場合には、 わ ずかな酸やアル力リや水分などの存在によつて表面から腐食が進行して鲭が発生 し、 それに伴って、 磁石特性の劣化やばらつきを招く。 さらに、 鑌が発生した磁 石を磁気回路などの装置に組み込んだ場合、 鲭が飛散して周辺部品を汚染する恐 れがある。 ·\n\n【0005】希土類系永久磁石に耐食性を付与する方法には数多くの方法があるが、 その一 つとして、 珪素化合物を出発原料とした耐食性被膜を希土類系永久磁石の表面に 形成する方法がある。 近年、 このような耐食性被膜の更なる性能向上を目的とし て種々の研究がなされている。\n\n【0006】例えば、 特開 2 0 0 0— 1 8 2 8 1 3号公報 （特許文献 1 ) においては、 亜鉛 微粒子を分散させたアル力リ珪酸塩水溶液からなる処理液を、 希土類系永久磁石 の表面に塗布した後、 熱処理を行うことで亜鉛微粒子分散耐食性被膜とする方法\n\nが提案されている。 この方法は、 アルカリ珪酸塩を出発原料とした被膜の耐食作 用と電位的に卑な亜鉛微粒子の犠牲防食作用を利用したものであり、 希土類系永 久磁石に高い耐食性を付与することができる方法として期待される。 しかしなが ら、 この方法においては、 亜鉛微粒子分散耐食性被膜を形成するための処理液中 に亜鉛微粒子を均一に分散させておくためには処理液をアル力リ性にしておかな ければならないため、 処理液を希土颦系永久磁石の表面に塗布した際、 磁石の表 面において磁石を構成する金属の水酸化物が生成し、 このような金属水酸化物か らなる層で磁石の表面が覆われてしまうことに起因して、 密着性に優れた亜鉛微 粒子分散耐食性被膜が形成されにくいといった問題や、 アル力リ珪酸塩を出発原 料とした被膜は柔軟性に劣るためにクラックが生じやすいといつた問題や、 廃液 処理が面倒であるといつた問題などがある。\n\n【0007】また、 特開 2 0 0 1— 1 4 3 9 4 9号公報 （特許文献 2 ) においては、 珪素有 機化合物と平均粒径が 1 nm〜l 0 0 nmの無機質微粒子を含有した処理液を、 希土類系永久磁石の表面に塗布した後、 熱処理を行うことで無機質微粒子分散耐 食性被膜とする方法が提案されている。 この方法は、 珪素有機化合物を出発原料 とした薄くて緻密な耐食性被膜を希土類系永久磁石の表面に形成するためのもの であり、 特定の平均粒径を有する無機質微粒子を被膜成分中に分散させることで、 被膜生成過程における被膜内部応力を緩和してクラックなどの物理的欠陥が発生 することを防止するものである。 この方法も希土類系永久磁石に高い耐食性を付 与することができる方法として期待される。 しかしながら、 ナノメータ一オーダ 一の無機質微粒子は水に均一に分散させることが困難なことなどを考慮すれば、 処理液の調製においては、 低級アルコールなどの有機溶媒を主体としてそこにわ ずかな水を添加し、 酸性条件下で珪素有機化合物を加水分解重合反応させてゾル 液とするとともに無機質微粒子を分散させる必要があり、 従って、 調製された処 理液は酸性であるため、 処理液を希土類系永久磁石の表面に塗布した際、 磁石の 腐食を招くといった問題や、 有機溶媒が揮発することで処理液組成が変動しやす く、 また、 環境に悪影響を与えるといった問題や、 廃液処理が面倒であるといつ た問題などがある。\n\n【0008】そこで本発明は、 亜鉛微粒子分散耐食性被膜を表面に有する希土類系永久磁石\n\nの安定かつ簡易な製造方法、 こうして製造される耐食性希土類系永久磁石、 各種 形状の薄型ワークに対する塗膜形成に適したディップスピンコーティング法およ びワークの塗膜形成方法を提供することを目的とする。\n\n【0009】発明の開示\n\n【0010】上記の点に鑑みてなされた本発明の耐食性希土類系永久磁石の製造方法は、 請 求の範囲第 1項記載の通り、 アルキルシリケートの加水分解重合反応物と平均粒 径が 1 π！〜 5 0 mの亜鉛微粒子を含有した ρ Ηが 6〜 8で粘度が 1 0 0 0 c P以下の水系処理液を、 希土類系永久磁石の表面に塗布した後、 2 5 0 ° (：〜 4 0 0 °Cにて熱処理を行うことで亜鉛微粒子分散耐食性被膜とすることを特徴とする。 また、 請求の範囲第 2項記載の製造方法は、 請求の範囲第 1項記載の製造方法 において、 亜鉛微粒子が鱗片状のものであることを特徴とする。\n\n【0011】また、 請求の範囲第 3項記載の製造方法は、 請求の範囲第 1項記載の製造方法 において、 水系処理液中における出発原料としてのアルキルシリケートと亜鉛微 粒子の合計配合割合が 4 0重量％〜9 0重量％ (アルキルシリケ一トは S i 02換算） であることを特徴とする。\n\n【0012】また、 請求の範囲第 4項記載の製造方法は、 請求の範囲第 1項記載の製造方法 において、 水系処理液中における出発原料としてのアルキルシリケ一トと亜鉛微 粒子の混合比率が 1 ： 1〜1 ： 1 9 (重量比：アルキルシリゲートは S i〇2換 算） であることを特徴とする。\n\n【0013】また、 請求の範囲第 5項記載の製造方法は、 請求の範囲第 1項記載の製造方法 において、 水系処理液中に有機分散剤を添加することを特徴とする。\n\n【0014】また、 請求の範囲第 6項記載の製造方法は、 請求の範囲第 1項記載の製造方法 において、 亜鉛微粒子分散耐食性被膜の J3莫厚が 1 m〜 5 0 mであることを特 徵とする。\n\n【0015】また、 請求の範囲第 7項記載の製造方法は、 請求の範囲第 1項記載の製造方法 において、 亜鉛微粒子分散耐食性被膜中に他の無機質微粒子をさらに分散させる ことを特徴とする。\n\n【0016】また、 請求の範囲第 8項記載の製造方法は、 請求の範囲第 1項記載の製造方法\n\nにおいて、 水系処理液の希土類系永久磁石の表面への塗布をディップスピンコー ティング法で行うことを特徴とする。\n\n【0017】また、 請求の範囲第 9項記載の製造方法は、 請求の範囲第 8項記載の製造方法 において、 粘度が 3 0 0 c P〜6 0 0 c Pの水系処理液を用いて行うことを特徴 とする。\n\n【0018】また、 請求の範囲第 1 0項記載の製造方法は、 請求の範囲第 8項記載の製造方 法において、 鉛直方向の中心軸を回転軸として回転可能な回転台座の略外周端部 上に、 複数個の希土類系永久磁石を保持し、 希土類系永久磁石が保持された回転 台座を水系処理液槽に浸漬することで希土類系永久磁石に水系処理液を浸漬塗装 した後、 液中から取り出し、 回転台座を回転させて希土類系永久磁石に余分に付 着した水系処理液を遠心振り切りすることでディップスピンコ一ティングを行う ことを特徵とする。\n\n【0019】また、 請求の範囲第 1 1項記載の製造方法は、 請求の範囲第 1 0項記載の製造 方法において、 複数個の希土類系永久磁石を回転台座の略外周端部上に略環状に 保持することを特徴とする。\n\n【0020】また、 請求の範囲第 1 2項記載の製造方法は、 請求の範囲第 1 0項記載の製造 方法において、 希土類系永久磁石が薄型磁石であることを特徴とする。\n\n【0021】また、 請求の範囲第 1 3項記載の製造方法は、 請求の範囲第 1 2項記載の製造 方法において、 薄型磁石をその最も広い面が回転台座の放射状方向に対して略平 行になるように保持することを特徴とする。\n\n【0022】また、 請求の範囲第 1 4項記載の製造方法は、 請求の範囲第 1 3項記載の製造 方法において、 回転台座の略外周端部上に装着した際、 複数個の薄型磁石を個々 の磁石が離間した状態でその最も広い面が回転台座の放射状方向に対して略平行 になるように略環状にセットすることができる塗装治具を用いて行うことを特毁 とする。\n\n【0023】また、 請求の範囲第 1 5項記載の製造方法は、 請求の範囲第 1 2項記載の製造 方法において、 薄型磁石が平板状、 リング状、 弓形状のいずれかの形状であるこ とを特徴とする。\n\n【0024】また、 請求の範囲第 1 6項記載の製造方法は、 請求の範囲第 1 4項記載の製造\n\n方法において、 ディップスピンコ一ティングを行った後、 薄型磁石がセットされ たままの塗装治具を回転台座から取り外し、 任意の場所で塗装治具にセッ卜され たままの薄型磁石を熱処理することを特徴とする。\n\n【0025】また、 本発明の希土類系永久磁石は、 請求の範囲第 1 7項記載の通り、 アルキ ルシリケートを出発原料とした被膜成分中に平均粒径が 1 m〜5 0 mの亜鉛 微粒子を分散させた耐食性被膜を表面に有することを特徴とする。\n\n【0026】また、 請求の範囲第 1 8項記載の希土類系永久磁石は、 請求の範囲第 1 7項記 載の希土類系永久磁石において、 耐食性被膜の亜鉛微粒子含有量が 5 0重量％〜 9 5重量％であることを特徴とする。\n\n【0027】また、 請求の範囲第 1 9項記載の希土類系永久磁石は、 請求の範囲第 1 7項記 載の希土類系永久磁石において、 磁石本体表面から内部に亜鉛が拡散しているこ とを特徴とする。\n\n【0028】また、 請求の範囲第 2 0項記載の希土類系永久磁石は、 請求の範囲第 1 7項記 載の希土類系永久磁石において、 請求項 1記載の製造方法により製造されたこと を特徴とする。\n\n【0029】また、 本発明のワークのディップスピンコーティング法は、 請求の範囲第 2 1 項記載の通り、 鉛直方向の中心軸を回転軸として回転可能な回転台座の略外周端 部上に、 複数個のワークを保持し、 ワークが保持された回転台座を塗料槽に浸漬 することでワークに塗料を浸漬塗装した後、 液中から取り出し、 回転台座を回転 させてワークに余分に付着した塗料を遠心振り切りすることを特徴とする。\n\n【0030】また、 本発明のワークの塗膜形成方法は、 請求の範囲第 2 2項記載の通り、 鉛 直方向の中心軸を回転軸として回転可能な回転台座の略外周端部上に装着した際、 複数個のワークを個々のワークが離間した状態で略環状にセッ卜することができ る塗装治具を用い、 ワークがセットされた塗装治具を装着した回転台座を塗料槽 に浸漬することでワークに塗料を浸漬塗装した後、 液中から取り出し、 回転台座 を回転させてワークに余分に付着した塗料を遠心振り切りし、 ワークがセッ卜さ れたままの塗装治具を回転台座から取り外し、 任意の場所で塗装治具にセットさ れたままのワークを所望により乾燥処理して行うことを特徴とする。\n\n【0031】本発明によれば、 亜鉛微粒子分散耐食性被膜を表面に有する希土類系永久磁石\n\nの安定かつ簡易な製造方法、 こうして製造される耐食性希土類系永久磁石、 各種 形状の薄型ワークに対する塗膜形成に適したディップスピンコーティング法およ びワークの塗膜形成方法が提供される。 図面の簡単な説明\n\n【0032】図 1は、 本発明のワークのディップスピン塗装方法の一例の概略工程図である。 図 2は、 本発明の回転台座の略外周端部上に複数個の平板状ワークを保持した 状態の一例の概略図である。\n\n【0033】図 3は、 本発明の回転台座の略外周端部上に複数個のリング状ワークを保持し た状態の一例の概略図である。\n\n【0034】図 4は、 本発明の塗装治具の一例の概略斜視図である。\n\n【0035】図 5は、 本発明の複数個の平板状ワークをセットした塗装治具の概略図である。 図 6は、 本発明の複数個の平板状ワークをセットした塗装治具を回転台座の略 外周端部上に装着した状態の一例の概略図である。\n\n【0036】図 7は、 実施例 4における E P MA 2次電子像である。\n\n【0037】図 8は、 同、 亜鉛 X線像である。\n\n【0038】図 9は、 同、 鉄 X線像である。 発明を実施するための最良の形態\n\n【0039】本発明において、 亜鉛微粒子分散耐食性被膜は、 アルキルシリゲートの加水分 解重合反応物と平均粒径が 1 ^ m〜5 0 mの亜鉛微粒子を含有した p Hが 6〜 8で粘度が 1 0 0 0 c P以下の水系処理液を、 希土類系永久磁石の表面に塗布し た後、 2 5 0 °C〜4 0 0 °Cにて熱処理を行うことで形成される。 このようにして 形成された亜鉛微粒子分散耐食性被膜は、 希土類系永久磁石に高い耐食性を付与 するものであるとともに、 磁石本体表面から内部に亜鉛が拡散していることで密 着性に優れる。\n\n【0040】ここで、 アルキルシリケートとしては、 一般式： S inO (n—1(O R) (2 n +2)で示されるものが用いられる。 式中、 Rはアルキル基であり、 メチル基、 ェ チル基、 プロピル基、 ブチル基などの炭素数 1〜4の低級アルキル基が例示され\n\nるが、 中でも、 安価であることに加えて毒性がなく取り扱い性に優れたェチル基\n\n【0041】(ェチルシリゲート） が好適である。 また、 nは 1以上の整数であるが、 緻密な 被膜を形成するためには nは 1 0以下の整数であることが望ましい。\n\n【0042】また、 亜鉛微粒子は、 平均粒径が l m〜 5 0 mのものが用いられる。 これ は、 平均粒径が 1 mよりも小さいと、 水系処理液中で亜鉛微粒子が二次凝集を 起こす恐れがある一方、 平均粒径が 5 O ^mよりも大きいと、 水系処理液中で亜 鉛微粒子が沈降する恐れがあり、 いずれの場合においても保存安定性に優れた亜 鉛微粒子が均一に分散した水系処理液を調製することが困難になる恐れがあるか らである。 なお、 亜鉛微粒子の平均粒径は、 2 ！〜 3 0 mが望ましく、 5 m〜2 0 /imがより望ましい。 亜鉛微粒子はいかなる形状のものであってもよい が、 亜鉛微粒子分散耐食性被膜にピンホールが極力発生しないようにするために は、 亜鉛微粒子は被膜成分中に高密度に積層充填されることが有利であり、 また、 磁石本体表面から内部に亜鋭を 散させるためには磁石本体に対する亜鉛微粒子 の接触面積は広いことが有利である。 従って、 かかる観点からは、 亜鉛微粒子は 鱗片状のものが望ましい。 亜鉛微粒子が鱗片状のものである場合、 亜鉛微粒子の 平均粒径とは平均長径を意味するものとする。\n\n【0043】水系処理液中における出発原料としてのアルキルシリケ一トと亜鉛微粒子の合 計配合割合は、 4 0重量％〜9 0重量％ (アルキルシリケ一トは S i〇2換算） とすることが望ましく、 6 0重量％〜8 0重量％とすることがより望ましい。 合 計配合割合が 4 0重量％未満であると、 十分な特性を発揮する膜厚を有する亜鉛 微粒子分散耐食性被膜を得るためには製造工程回数を必要以上に増やさなければ ならなくなる恐れがある一方、 9 0重量％を超えると、 水系処理液の保存安定性 に影響を及ぼす恐れがあるからである。\n\n【0044】水系処理液中における出発原料としてのアルキルシリケートと亜鉛微粒子の混 合比率は、 形成される亜鉛微粒子分散耐食性被膜の亜鉛微粒子含有量が 5 0重 量％〜9 5重量％になるように、 1 ： 1〜1 ： 1 9 (重量比：アルキルシリケ一 トは S i 02換算） とすることが望ましく、 1 ： 3〜1 ： 1 0とすることがより 望ましい。 形成される亜鉛微粒子分散耐食性被膜の亜鉛微粒子含有量が 5 0重 量％より少ないと、 被 J3莫成分中に亜鉛微粒子を分散させることの効果が十分に発\n\n揮されない恐れがある一方、 9 5重量％より多いと、 アルキルシリケ一トを出発 原料とする耐食性被膜としての本来的な特性が十分に発揮されない恐れがあるか らである。\n\n【0045】希土類系永久磁石の表面に塗布する水系処理液の p Hを 6〜 8と規定するのは、 p Hが 6より小さいと、 上記の特許文献 2に記載したように希土類系永久磁石の 腐食を招く恐れがある一方、 p Hが 8より大きいと、 上記の特許文献 1に記載し たように密着性に優れた亜鉛微粒子分散耐食性被膜が形成されない恐れがあるか り ¾る。\n\n【0046】希土類系永久磁石の表面に塗布する水系処理液の粘度を 1 0 0 0 c P以下と規 定するのは、 水系処理液の粘度が 1 0 0 0 c Pを超えると、 膜厚が均一な亜鉛微 粒子分散耐食性被膜を形成することが困難になる恐れがあるからである。\n\n【0047】均質性に優れた水系処理液の調製は、 例えば、 酸性条件下 （p H 3〜4程度） または塩基性条件下 （p H 1 0〜1 2程度） でアルキルシリケ一トを加水分解重 合反応させた水溶液に平均粒径が 1 m〜 5 0 mの亜鉛微粒子を添加した後、 p Hを 6〜8に調整するとともに粘度を 1 0 0 c P以下に維持または調整するこ とで行うことが望ましい （粘度は 5 0 c P以下がより望ましく 2 5 c P以下がさ らに望ましい）。 なお、 酸性条件下でアルキルシリケ一卜を加水分解重合反応さ せた場合、 p Hの調整は、 例えば、 水酸化ナトリウムなどを用いて行えばよい。 また、 塩基性条件下でアルキルシリケ一トを加水分解重合反応させた場合、 p H の調整は、 例えば、 塩酸などを用いて行えばよい。\n\n【0048】水系処理液の調製の段階でアルキルシリケ一トを加水分解重合反応させておく のは、 形成される被膜を緻密なものにするためである。 アルキルシリゲートの加 水分解重合反応は、 用いるアルキルシリケ一卜の全てを加水分解重合反応させる 必要は必ずしもなく、 その一部を加水分解重合反応させるような態様であつても よい。 加水分解重合反応の程度は、 酸や塩基の添加量や加水分解重合反応を起こ すに際して使用する媒体としての水の量にて調整することができる。 アルキルシ リケ一卜の加水分解重合反応の程度が高いと、 水溶液の粘度が 1 0 0 c Pを超え る場合がある。 いったん粘度が 1 0 0 c Pを超えた場合であっても加温水を添加 するなどすれば粘度の低下を図ることも可能ではあるが、 水系処理液のより優れ\n\nた均質性を確保するためには、 加水分解重合反応時に水溶液の粘度が 1 0 0 c P を超えそうな場合には、 適宜、 水を添加するなどしてその粘度が 1 0 0 c Pを越 えないようにすることが望ましい。 なお、 所望する膜厚の被膜が形成されやすく することを目的として水系処理液の表面張力を適度なものにしたい場合などには、 例えば、 水系処理液中にセルロース系の増粘剤 （ヒドロキシェチルセルロース、 メチルセルロース、 メチルヒドロキシプロピルセルロース、 ェチルヒドロキシェ チルセルロース、 メチルェチルセルロースなどが例示される水溶性セル口一スェ —テルなど） などを添加することで、 その粘度を調整することができる。 形成さ れる被膜の膜厚を厚くすることなどを目的として水系処理液の粘度を 1 0 0 c P 以上にしたい場合には、 いったん調製した水系処理液中に増粘剤を添加して粘度 を高めることによって行うことが望ましい。\n\n【0049】アルキルシリケ一トを加水分解重合反応させた水溶液に亜鉛微粒子を添加する に際しては、 有機分散剤を用いて、 水系処理液中で亜鉛微粒子が均一に分散する ようにすることが望ましい。 水系処理液中への有機分散剤の添加は、 例えば、 有 機分散剤を添加した水に亜鉛微粒子を投入することで亜鉛微粒子が均一に分散し た亜鉛微粒子分散水系媒体を調製し、 この亜鉛微粒子分散水系媒体とアルキルシ リケ一卜を加水分解重合反応させた水溶液を混合することで行えばよい。 なお、 有機分散媒としては、 ァニオン性分散媒 （脂肪族系多価カルボン酸、 ポリエーテ ルポリエステルカルボン酸塩、 高分子ポリエステル酸ポリアミン塩、 高分子量ポ リカルボン酸長鎖ァミン塩など)、 非イオン性分散媒 （ポリオキシエチレンアル キルエーテルやソルビタンエステルなどのカルボン酸塩ゃスルフォン酸塩やアン モニゥム塩など)、 高分子分散媒 （水溶性エポキシのカルボン酸塩ゃスルフォン 酸塩やアンモニゥム塩など、 スチレン一アクリル酸共重合物、 ニカヮなど） など が亜鉛微粒子との親和性ゃコストの点から好適に使用される。\n\n【0050】なお、 希土類系永久磁石の表面に塗布する水系処理液の粘度は、 十分な特性を 発揮する膜厚を有する亜鉛微粒子分散耐食性被膜を必要以上の製造工程回数を繰 り返すことなく形成するためには、 5 c P以上であることが望ましい。\n\n【0051】希土類系永久磁石の表面に水系処理液を塗布するに際しては、 ディップコーテ ィング法、 スプレー法、 スピンコーティング法、 ディップスピンコーティング法\n\nなどを採用することができる。 なお、 希土類系永久磁石の表面に形成される亜鉛 微粒子分散耐食性被膜との密着性の向上を図るため、 水系処理液を塗布する前に 磁石に対してサンドプラスト処理や酸洗処理を施してもよい。\n\n【0052】水系処理液の希土類系永久磁石の表面への塗布は、 より均一な水系処理液の塗 膜が形成されるようにするためには、 ディップスピンコーティング法で行うこと が望ましい。 とりわけ、 鉛直方向の中心軸を回転軸として回転可能な回転台座の 略外周端部上に、 複数個の希土類系永久磁石を保持し、 希土類系永久磁石が保持 された回転台座を水系処理液槽に浸漬することで希土類系永久磁石に水系処理液 を浸漬塗装した後、 液中から取り出し、 回転台座を回転させて希土類系永久磁石 に余分に付着した水系処理液を遠心振り切りすることでディッブスピンコーティ ングを行うことが望ましい。\n\n【0053】薄型ワークの表面に、 膜厚が例えば 1 O im程度の薄い塗膜を形成する方法と して、 ワークを塗料槽に浸漬することでワークに塗料を浸漬塗装した後、 液中か ら取り出し、 高速回転させて余分に付着した塗料を振り切ることによるディップ スピンコ一ティング法が採用されることがある。 これまでに知られている薄型ヮ ークのディップスピンコーティング法としては、 例えば、 特開平 7— 2 0 1 0 8 8号公報に光ディスクの保護膜塗布方法として提案されているものがある。 この 方法は、 水平主軸に複数個の基板を一定間隔に垂直にセットし、 主軸を中心に低 速回転させながら基板の中心部以外を保護膜材料に浸漬して該材料を塗布した後、 該材料から引き上げ、 最後に高速回転させて該材料を振り切ることによるもので ある。 また、 特開平 3— 8 6 2 7 1号公報においては、 ハンガーを用いて被塗物 の塗布面 （平面） をほぼ水平に保持した状態で、 ハンガーと被塗物を含む全体の 重心を通る鉛直線を回転軸として回転させて塗料を遠心振り切りする工程を含む ことを特徴とするディップスピンコーティング法が提案されている。 また、 特開 2 0 0 0 - 1 6 4 5 5 6号公報においては、 複数の溝を有する一対の保持部材を 溝を有する側を対向させ、 この対向する溝でウェハの周辺を保持するようにした ウェハキヤリァを用い、 キヤリアをその溝が略回転加速度方向に向くように回転 させてキャリアに保持した複数個のウェハ上の液体を遠心振り切り乾燥する方法 が提案されている。\n\nW\n\n【0054】大量の薄型ワークに対してディップスピンコーティング法を採用する場合、 ヮ ークの形状にとらわれることなく、 全てのワークに対して膜厚のばらつきを生じ させないで均一な塗装ができることが望ましい。 しかしながら、 この点に鑑みれ ば、 上記の特許文献に記載のいずれの方法も多かれ少なかれ欠点を有する。 具体 的には、 特開平 7— 2 0 1 0 8 8号公報に記載の方法では、 ワークをその中心部 で保持しなければならないので、 リング状ワークにしか適用することができない といった欠点がある。 また、 この方法では、 リング状ワークの内周面に水平主軸 を当接させ、 両者間に発生する摩擦力でワーク自体を回転させるため、 ワークと 主軸との間に発生する摩擦力にばらつきがあると、 ワークの回転速度がばらつく ので、 全てのワークに対して均一な塗装ができない恐れがあるといつた欠点や、 ヮ一クを高速回転させることが困難であるため、 粘性が高い塗料 （例えば粘度が 5 0 0 c Pを超えるようなもの） をワークに塗装する場合には、 余分に付着した 塗料を十分に振り切ることができない恐れがあるといった欠点がある。 また、 特 開平 3— 8 6 2 7 1号公報に記載の方法では、 ワークの平面をほぼ水平に保持す るので、 上面と下面との間で塗料の付着量に差異が生じる恐れがあるといった欠 点がある。 また、 特開 2 0 0 0— 1 6 4 5 5 6号公報に記載の方法では、 ワーク の一方の平面が回転軸に対向して保持されるので、 保持位置によってワークごと にその回転速度が異なることから、 全てのワークに対して均一な塗装ができない 恐れがあるといつた欠点がある。\n\n【0055】しかしながら、 本発明において提案するディップスピンコーティング法によれ ば、 大量の薄型ワークに対しても膜厚のばらつきを生じさせないで均一な塗膜形 成ができる。\n\n【0056】以下、 本発明において提案するディップスピンコーティング法を、 必要に応じ て図面を参照しながら説明するが、 本発明において提案するディップスピンコー ティング法は以下の記載に何ら限定して解釈されるものではない。 本発明におい て提案するディッブスビンコ一ティング法は、 ワークの形状にとらわれることな く、 あらゆる形状のワークの塗装に適用することができるが、 とりわけ平板状や リング状や弓形状などの薄型ワークの塗装に好適であるので、 以下の説明におい ては、 本発明の方法を平板状ワークとリング状ワークの塗装に適用する場合を例\n\nW\n\n【0057】にとる。\n\n【0058】図 1は、 本発明において提案するディップスピンコ一ティング法の一例の概略 工程図である。 その工程を順を追って説明すると、 （a ) まず、 鉛直方向の中心 軸 1を回転軸として回転可能な回転台座 2の略外周端部上に、 複数個の平板状ヮ ーク Xを、 その個々の最も広い面 （平面） が放射状方向に略平行になるように略 環状に保持する。 （b ) 次に、 エアシリンダ 3により塗料槽 4を上昇させてヮー ク Xが保持された回転台座 2を塗料槽 4に浸漬することでワーク Xに塗料を浸漬 塗装する。 （c ) 次に、 エアシリンダ 3により塗料槽 4を下降させて回転台座 2 を液中から取り出す。 （d ) 最後に、 回転台座 2をモータ 5により中心軸 1を回 転軸として回転させて （少なくとも 1回は回転方向を逆転することが望ましい）、 ワーク Xの平面に余分に付着した塗料を遠心振り切りする。 この方法によれば、 粘性が比較的高い塗料 （例えば粘度が 2 0 0 c Pを超えるようなもの） であって も、 回転台座 2の大きさを調整したり回転速度を制御したりすることで、 ワーク Xの平面への塗料の付着量を自在に調整することができることから、 形成される 塗膜の膜厚も自在に調整することができる。\n\n【0059】なお、 回転台座 2の台座面は、 塗料溜りができたりしないように、 メッシュ状 であることが望ましい。\n\n【0060】図 2 ( a ) は、 回転台座 2の略外周端部上に、 複数個の平板状ワーク Xを、 そ の個々の平面が放射状方向に略平行になるように略環状に保持した状態の一例の 概略部分斜視図である。 図 2 ( b ) は、 ヮ一ク Xを保持した回転台座 2をその上 方から見た図である。 ワーク Xは、 回転台座 2に敷設された 2本の保持部材 （断 面が半円の棒状のものが望ましい） 1 1上に載置される。 ワーク Xは、 図 1に示 したように、 回転台座 2上に直に載置してもよいが、 このような載置方法を採用 することで、 ワーク Xの下面に生じる載置跡を極小化することができる （図 2 ( c ) 参照)。\n\n【0061】個々の平板状ワーク Xは、 保持部材 1 1に対して鉛直方向に設けられたスぺ一 サ 1 2によって離間した状態で保持される。 なお、 スぺーサ 1 2はワーク Xの横 転を防止する機能も併せ持つ。 隣接するスぺーサ 1 2とスぺ一サ 1 2の間隔は、 ワーク Xの厚みよりも広いことが望ましい。 常にワーク Xの両面にスぺ一サ 1 2\n\nが当接していると、 その当接跡が顕著になるからである。 また、 スぺーサ 1 2の 断面は円形であることが望ましい。 回転台座 2を回転させることによってワーク Xの平面に生じる当接跡を極小化することができるからである。\n\n【0062】工程 （d ) において、 回転台座 2をモー夕 5により中心軸 1を回転軸として回 転させて平板状ワーク Xの平面に余分に付着した塗料を遠心振り切りする際、 ヮ ーク Xは、 遠心力により放射状方向に飛び出そうとするが、 図略の構成によって 回転台座 2に固定され、 水平方向に配置された遠心飛び出し規制棒 1 3は、 ヮー ク Xの外側側面に当接してワーク Xの放射状方向への飛び出しを規制する働きを 有する。 また、 遠心飛び出し規制棒 1 3に対して回転軸方向に設けられたスぺー サ 1 4は、 遠心振り切り中のワーク Xの動きを規制する働きを有する。\n\n【0063】図 3 ( a ) は、 回転台座 2の略外周端部上に、 複数個のリング状ワーク Yを、 その個々の平面が放射状方向に略平行になるように略環状に保持した状態の一例 の概略部分斜視図である。 ワーク Yは、 図略の構成によって回転台座 2に固定さ れた水平吊掛部材 1 5に、 そのリング部にて吊り掛けられて保持される。 水平吊 掛部材 1 5は、 断面が円形の棒状のものが望ましい。 また、 水平吊掛部材 1 5の ワーク Yが吊り掛けられる部分は、 例えば V字型に切り欠いておくことが望まし い （図 3 ( b ) 参照)。 水平吊掛部材 1 5をこのような構成とすることで、 ヮー ク Yのリング部に生じる吊掛跡を極小化することができる。\n\n【0064】複数個の薄型ワークにディップスピン塗装を行うに際しては、 図 1〜図 3に示 したように、 薄型ワークの 1個 1個を直接的に回転台座に保持させてもよいが、 回転台座の略外周端部上に装着した際、 複数個の薄型ワークを個々のワークが離 間した状態でその最も広い面が回転台座の放射状方向に対して略平行になるよう に略環状にセッ卜することができる塗装治具を用いてもよい。\n\n【0065】図 4は、 回転台座の略外周端部上に装着した際、 複数個の平板状ワークを個々 のワークが離間した状態でその平面が回転台座の放射状方向に対して略平行にな るように略環状にセヅトすることができる塗装治具の一例の概略斜視図である。 この塗装治具 Zは、 複数個の平板状ワーク Xを個々のワークが離間した状態でそ の平面が鉛直方向に略平行になるように保持するための、 水平方向に平行配置さ れた、 2本の、 スぺ一サ 2 2付き保持棒 2 1と、 ワーク Xがセットされた治具を\n\nW\n\n【0066】回転台座の略外周端部上に装着して回転台座を回転させた際に、 ワーク Xの外側 側面に当接して遠心力による放射状方向へのワーク Xの飛び出しを規制するため の、 水平方向に平行配置された、 スぺーサ 2 4付き遠心飛び出し規制棒 2 3を少 なくとも有してなるが、 保持棒 2 1の上方に、 治具を上下反転させた際に、 複数 個のワーク Xを個々のワークが離間した状態でその平面が鉛直方向に略平行にな るように、 かつ、 ワーク Xの上部が保持棒 2 1と空間を存するように保持するた めの、 保持棒 2 1に平行配置された、 2本の、 スぺーサ 2 6付き棒状部材 2 5を さらに有してなる。 ワーク Xを上段にて保持するための保持棒 2 1は、 治具を上 下反転させた際に、 棒状部材 2 5として機能する。\n\n【0067】図 5は、 複数個の薄型ワーク Xをセットした塗装治具 Zの概略正面図 （a ) と D— D断面図 （b ) である。\n\n【0068】保持棒 2 1と棒状部材 2 5は、 断面が円形であることが望ましい。 薄型ワーク Xの下面に生じる載置跡を極小化することができるからである。 また、 遠心飛び 出し規制棒 2 3も、 断面が円形であることが望ましい。 薄型ワーク Xの外側側面 に生じる当接跡を極小化することができるからである。 また、 スぺ一サ 2 2とス ぺーサ 2 4とスぺーサ 2 6も、 断面が円形であることが望ましい。 薄型ワーク X の平面に生じる当接跡を極小化することができるからである。 なお、 保持棒 2 1 と棒状部材 2 5は、 必ずしも 2本必要であるわけではなく、 1本であってもよい。 図 4に示した塗装治具 Zは、 例えば、 次のようにして用いられる。 図 6は、 自 体公知の着脱自在な装着手段により、 複数個の平板状ワーク Xをセットした塗装 治具 Zを、 回転台座 2の略外周端部上に装着した状態の一例の概略部分平面図で ある。 図 1に示した概略工程図に従って、 エアシリンダ 2により塗料槽 4を上昇 させてワーク Xをセットした塗装治具 Zを装着した回転台座 2を塗料槽 4に浸漬 することでワーク Xに塗料を浸漬塗装する。 次に、 エアシリンダ 3により塗料槽 4を下降させて回転台座 2を液中から取り出す。 最後に、 回転台座 2をモ一夕 5 により中心軸 1を回転軸として回転させてワーク Xの平面に余分に付着した塗料 を遠心振り切りすることでディップスピン塗装を完了する。 任意時間経過後、 ヮ ーク Xがセッ卜されたままの塗装治具 Zを回転台座 2から取り外し、 任意の場所 で塗装治具 Zにセットされたままのワーク Xを所望により乾燥処理 （自然乾燥ま\n\nたは加熱乾燥） する。 その後、 ワーク Xがセットされたままの塗装治具 Zを上下 反転させて再び回転台座 2に装着し、 ディップスピン塗装を前記と同様の工程に て再び行う。 このようにすれば、 1回目の塗装と 2回目の塗装とでは、 ワーク X に生じる載置跡や当接跡の位置が変わるので、 2回目の塗装により、 1回目の塗 装でヮ一ク Xに生じた載置跡や当接跡にも塗装が行われることから、 ワーク Xに 対してより均一な塗装を行うことができる。 その後、 ワーク Xがセットされたま まの塗装治具 Zを回転台座 2から取り外し、 任意の場所で塗装治具 Zにセットさ れたままのヮ一ク Xを所望により乾燥処理 （自然乾燥または加熱乾燥） すれば、 大量のワークに対しても膜厚のばらつきを生じさせないで均一な塗膜形成を効率 よく行うことができる。\n\n【0069】なお、 水系処理液の希土類系永久磁石の表面への塗布をディップスピンコーテ ィング法で行う場合、 粘度が 3 0 0 c P〜6 0 0 c Pの水系処理液を用いること で、 より均一な塗膜形成を行うことができる。 このような粘度の水系処理液は、 上述したように、 いったん調製した水系処理液中にセルロース系の増粘剤などを 添加することで粘度を高めたものであることが望ましい （増粘剤は水系処理液中 に 1重量％〜 2重量％含まれるように添加することが望ましい）。\n\n【0070】表面に水系処理液の塗膜が形成された希土類系永久磁石の熱処理は、 2 5 0 °C 〜4 0 0 °Cにて行う。 このような温度条件にて熱処理を行うと、 水系処理液中に 含まれる亜鉛微粒子の一部が、 被膜生成過程において、 磁石本体表面から内部に 適度に拡散することで、 密着性に優れた亜鉛微粒子分散耐食性被膜が形成される。 熱処理の温度が 2 5 0 よりも低いと、 このような亜鉛の拡散が十分に起こらな いばかりか、 水が十分に蒸発せずに希土類系永久磁石の表面に残存することで、 その後において磁石の腐食を招く恐れがある一方、 4 0 0 °Cよりも高いと、 亜鉛 の拡散が必要以上に起こることで磁石特性に悪影響を及ぼす恐れがある。 熱処理 の時間は、 例えば、 1 0分〜 1 2 0分が望ましい。 なお、 水系処理液を表面に塗 布した希土類系永久磁石をいつたん 1 0 0 °C~ 1 7 0 °Cで仮乾燥してから熱処理 を行うことで、 より均質な亜鉛微粒子分散耐食性被膜を形成することができる。 亜鉛微粒子分散耐食性被膜は、 その膜厚が 1 m〜5 0 /i mとなるように形成 することが望ましく、 5 m〜l 5 mとなるように形成することがより望まし\n\nい。 膜厚が 1 m未満であると、 亜鉛微粒子分散耐食性被膜としての特性が十分 に発揮されない恐れがある一方、 膜厚が 50 ^ mを超えると、 希土類系永久磁石 の有効体積が十分に確保することができなくなる恐れがあるからである。\n\n【0071】なお、 亜鉛微粒子分散耐食性被膜中に他の無機質微粒子をさらに分散させても よい。 無機質微粒子としては、 例えば、 アルミニウム、 錫、 マンガン、 マグネシ ゥム、 チタン、 ニッケルなどの亜鉛と同様に電位的に卑な金属の微粒子が挙げら れる。 例えば、 亜鉛微粒子とともにアルミニウム微粒子を分散させることで、 亜 鉛微粒子の腐食による白錡 （塩基性炭酸亜鉛） の生成を効果的に防止することが できる。 また、 被膜に発生しうるピンホールをより低減化し、 被膜の耐食性をよ り高めるために、 被膜中に亜鉛微粒子とともに A 12〇3や T i〇2や S i 02や マイ力などの酸化物微粒子を分散させてもよい。 亜鉛微粒子とともに他の無機質 微粒子を分散させる場合、 形成される耐食性被膜の亜鉛微粒子と他の無機質微粒 子の合計含有量は、 95重量％以下であることが望ましい。\n\n【0072】希土類系永久磁石としては、 N d— F e— B系永久磁石に代表される R— F e ― B系永久磁石や Sm-Fe-N系永久磁石に代表される R— Fe—N系永久磁 石などの公知の希土類系永久磁石が挙げられる。 中でも、 R— Fe— B系永久磁 石は、 特に磁気特性が高く、 量産性や経済性に優れている点において望ましいも のである。 希土類系永久磁石は、 焼結磁石であってもよいしポンド磁石であって もよい。\n\n【0073】希土類系永久磁石における希土類元素 （R) は、 Nd、 P r、 Dy、 Ho、 T b、 Smのうち少なくとも 1種、 あるいはさらに、 La、 Ce、 Gd、 E r、 E u、 Tm、 Yb、 Lu、 Yのうち少なくとも 1種を含むものが望ましい。\n\n【0074】また、 通常は Rのうち 1種をもって足りるが、 実用上は 2種以上の混合物 （ミ ッシュメタルゃジジムなど） を入手上の便宜などの理由によつて使用することも できる。\n\n【0075】さらに、 A l、 T i、 V、 C r、 Mn、 B i、 Nb、 Ta、 Mo、 W、 Sb、 Ge、 Sn、 Z r、 N i、 S i、 Zn、 Hf、 G aのうち少なくとも 1種を添加 することで、 保磁力ゃ減磁曲線の角型性の改善、 製造性の改善、 低価格化を図る ことが可能となる。 また、 F eの一部を Coで置換することによって、 得られる\n\n磁石の磁気特性を損なうことなしに温度特性を改善することができる。 実施例\n\n【0076】以下、 本発明を実施例と比較例によってさらに詳細に説明するが、 本発明はこ れに限定して解釈されるものではない。\n\n【0077】実施例 1 ：\n\n【0078】出発原料として、 電解鉄、 フエロボロン、 Rとしての Ndを所要の磁石組成に 配合し、 溶解铸造後、 機械的粉碎法にて粗粉砕してから微粉碎することで粒度が 3 / m〜l 0 mの微粉末を得、 これを 10 k〇 eの磁界中で成形してからアル ゴン雰囲気中で 1 100°CX 1時間の焼結を行った後、 得られた焼結体に対し て 600°CX 2時間の時効処理を行い、 15Nd— 7B— 78 F eの組成を有 する磁石体から切り出した 36mmX 32mmX 3 mm寸法の平板状焼結磁石 試験片を用いて以下の実験を行つた。\n\n【0079】A. ェチルシリゲート 40 (ェチルシリゲートを S i〇2換算で 40重量％含 有する無色透明液体） に水を添加し、 1N塩酸で pHを 3に調整することでヱチ ルシリケ一トを加水分解重合反応させ、 出発原料としてのェチルシリゲートを 2 0重量％ (S i 02換算） 含有する水溶液を調製した。 この水溶液と、 有機分散 剤 （商品名ソルスパース S 20000 :アビシァ社製） と平均長径が 20 mの 鱗片状亜鉛微粒子 （概寸法 20 mx 20 mx 1 ^m) を水に添加して調製 した亜铅微粒子分散水系媒体を混合し、 よく攪拌して 1 N水酸化ナトリゥムで p Hを 7に調整し、 出発原料としてのェチルシリケートと亜鉛微粒子の合計配合割 合が 70重量％ (ェチルシリゲートは S i 02換算） で、 出発原料としてのェチ ルシリゲートと亜鉛微粒子と有機分散剤の混合比率が、 9. 9 : 90 : 0. 1\n\n【0080】(重量比：ェチルシリゲートは S i 02換算） である粘度が 15 c Pの水系処理 液を得た。\n\n【0081】B. エタノールにて超音波洗浄 （脱脂処理） してから 15分間自然乾燥させた 試験片を上記の水系処理液に浸漬した。 水系処理液から取り出した試験片を遠心 乾燥機に収容し、 300 r pmにて 30秒間振り切りすることで試験片の表面に 付着している余分な水系処理液を除去した後、 100°CX 5分間大気中にて仮\n\n乾燥した。 こうして表面に塗布した水系処理液を仮乾燥させた試験片を再度水系 処理液に浸漬した。 水系処理液から取り出した試験片の表面に付着している余分 な水系処理液を上記と同様にして除去した後、 表面に水系処理液の塗膜が形成さ れた試験片に対して 320°CX 10分間大気中にて熱処理を行い、 試験片の表 面に亜鉛微粒子含有量が 90重量％の亜鉛微粒子分散耐食性被膜を形成した。 形 成された亜鉛微粒子分散耐食性被膜の膜厚は約 10 /mであった （断面観察よ り）。\n\n【0082】C. こうして製造された亜鉛微粒子分散耐食性被膜を表面に有する試験片 10 個に対して 35 °Cの 5 %塩水を 500時間噴霧するという耐食性試験を行つたが、 試験後において外観変化 （発鲭） を来したものはなかった。\n\n【0083】実施例 2 ：\n\n【0084】実施例 1と同様にして調製した出発原料としてのェチルシリケ一トを 20重 量％ (S i〇2換算） 含有する pHが 3の水溶液と、 有機分散剤 （商品名ソルス パース S 20000 :アビシァ社製） と平均長径が 20 mの鱗片状亜鉛微粒子 (概寸法 20 imX 20 mX 1 urn) と平均粒径が 3 の粒状アルミニゥ ム微粒子を水に添加して調製した亜鉛 ·アルミニウム微粒子分散水系媒体を混合 し、 よく攪拌して 1N水酸化ナトリウムで pHを 7に調整し、 出発原料としての ェチルシリケ一卜と亜鉛微粒子とアルミニウム微粒子の合計配合割合が 70重 量％ (ェチルシリケ一トは S i 02換算） で、 出発原料としてのェチルシリケ一 トと亜鉛微粒子とアルミニウム微粒子と有機分散剤の混合比率が、 9. 9 : 6 0 : 30 : 0. 1 (重量比：ェチルシリケ一卜は S i 02換算） である粘度が 1 3 c Pの水系処理液を得た。 この水系処理液を用いて実施例 1と同様の試験片の 表面に実施例 1と同様にして亜鉛微粒子含有量が 60重量％でアルミニウム微粒 子含有量が 30重量％の亜鉛 ·アルミニウム微粒子分散耐食性被膜を形成した。 形成された亜鉛 ·アルミニウム微粒子分散耐食性被膜の膜厚は約 10 mであつ た （断面観察より）。 こうして製造された亜鉛 ·アルミニウム微粒子分散耐食性 被膜を表面に有する試験片 10個に対して実施例 1と同様の耐食性試験を行った が、 試験後において外観変化 （発鲭） を来したものはなかった。\n\n【0085】実施例 3 ：\n\n実施例 1と同様にして調製した出発原料としてのェチルシリケートを 20重 量％ (S i〇2換算） 含有する pHが 3の水溶液と、 有機分散剤 （商品名ソルス パ一ス S 20000 :アビシァ社製） と平均長径が 20 mの鱗片状亜鉛微粒子 (概寸法 20 iimx 20 πιΧ 1 ) と平均粒径が 3 の粒状アルミニゥ ム微粒子と平均粒径が 3 mの粒状錫微粒子を水に添加して調製した亜鉛 ·アル ミニゥム ·錫微粒子分散水系媒体を混合し、 よく攪拌して 1 N水酸化ナトリゥム で pHを 7に調整し、 出発原料としてのェチルシリゲートと亜鉛微粒子とアルミ ニゥム微粒子と錫微粒子の合計配合割合が 70重量％ (ェチルシリケ一トは S i o2換算） で、 出発原料としてのェチルシリゲートと亜鉛微粒子とアルミニウム 微粒子と錫微粒子と有機分散剤の混合比率が、 9. 9 : 55 : 25 : 10 : 0. 1 (重量比：ェチルシリケ一トは S i〇2換算） である粘度が 18 c Pの水系処 理液を得た。 この水系処理液を用いて実施例 1と同様の試験片の表面に実施例 1 と同様にして亜鉛微粒子含有量が 55重量％でアルミニウム微粒子含有量が 25 重量％で錫微粒子含有量が 10重量％の亜鉛 ·アルミニウム ·錫微粒子分散耐食 性被膜を形成した。 形成された亜鉛 ·アルミニウム ·錫微粒子分散耐食性被膜の 膜厚は約 l O mであった （断面観察より）。 こうして製造された亜鉛 ·アルミ ニゥム ·錫微粒子分散耐食性被膜を表面に有する試験片 10個に対して実施例 1 と同様の耐食性試験を行ったが、 試験後において外観変化 （発鲭） を来したもの はなかった。\n\n【0086】比較例 1 ：\n\n【0087】A. S i〇2ZNa20が 4. 0で p Hが 12のアルカリ珪酸ナトリウム水溶 液を調製した。 この水溶液と、 有機分散剤 （商品名ソルス Λ—ス S 20000 : アビシァ社製） と平均長径が 20 imの鱗片状亜鉛微粒子 （概寸法 20 mx 20 mx 1 rn) を水に添加して調製した亜鉛微粒子分散水系媒体を混合し、 よく攪拌して、 出発原料としてのアル力リ珪酸ナトリゥムと亜鉛微粒子の合計配 合割合が 70重量％ (アルカリ珪酸ナトリウムは S i 02換算） で、 出発原料と してのアル力リ珪酸ナ卜リゥムと亜鉛微粒子と有機分散剤の混合比率が、 9. 9 : 90 : 0. 1 (重量比：アルカリ珪酸ナトリウムは S i 02換算） である処 理液を得た。\n\nB. エタノールにて超音波洗浄 （脱脂処理） してから 15分間自然乾燥させた 実施例 1と同様の試験片を上記の処理液に浸漬した。 処理液から取り出した試験 片を遠心乾燥機に収容し、 300 r pmにて 30秒間振り切りすることで試験片 の表面に付着している余分な処理液を除去した後、 100°CX 5分間大気中に て仮乾燥した。 こうして表面に塗布した処理液を仮乾燥させた試験片を再度処理 液に浸漬した。 処理液から取り出した試験片の表面に付着している余分な処理液 を上記と同様にして除去した後、 表面に処理液の塗膜が形成された試験片に対し て 150°CX 30分間大気中にて熱処理を行い、 試験片の表面に亜鉛微粒子含 有量が 90重量％の亜鉛微粒子分散耐食性被膜を形成した。 形成された亜鉛微粒 子分散耐食性被膜の膜厚は約 10 mであった （断面観察より）。\n\n【0088】C. こうして製造された亜鉛微粒子分散耐食性被膜を表面に有する試験片 10 個に対して 35°Cの 5%塩水を 500時間噴霧するという耐食性試験を行ったと ころ、 200時間経過時点において外観変化 （発鲭） を来したものが 7個存在し た。\n\n【0089】実施例 4：\n\n【0090】急冷合金法で作製した、 Nd： 12原子％、 Fe ： 77原子％、 B： 6原子％、 Co： 5原子％の組成からなる平均長径 150 mの合金粉末にエポキシ樹脂を 2wt %加えて混練し、 686 NZmm2の圧力で圧縮成形した後、 150°Cで 1時間キュアすることによって作製した、 外径 3 OmmX内径 28mmX長さ 4mmのリング状ボンド磁石試験片を用いて実施例 1と同様の実験を行い、 試験 片の表面に亜鉛微粒子含有量が 90重量％の亜鉛微粒子分散耐食性被膜を形成し た。 形成された亜鉛微粒子分散耐食性被膜の膜厚は約 10 mであった （断面観 察より）。 また、 EPMA (電子線マイクロアナライザー：島津製作所社製 EP M810) を用いて亜鉛微粒子分散耐食性被膜を表面に有する試験片の表面付近 の断面観察を行つた。 その 2次電子像を図 7に亜鉛 X線像を図 8に鉄 X線像を図 9に示す。 図 7〜図 9より、 試験片本体表面から内部に亜鉛が拡散していること が判明した。 なお、 亜鉛の拡散による試験片本体の磁気特性の劣化は認められな かった。 こうして製造された亜鉛微粒子分散耐食性被莫を表面に有する試験片 1 0個に対して 35 °Cの 5 %塩水を 500時間噴霧するという耐食性試験を行つた\n\nが、 試験後において外観変化 （発鑌） を来したものはなかった。\n\n【0091】実施例 5 ：\n\n【0092】実施例 1で調製した水系処理液に、 増粘剤としてヒドロキシェチルセルロース をその濃度が 1重量％となるように添加し、 粘度を 4 5 0 c Pに調整した。 エタ ノールにて超音波洗浄 （脱脂処理） してから 1 5分間乾燥させた実施例 1と同様 の多数の試験片を、 図 4に示した塗装治具にセットし、 試験片をセットした塗装 治具を図 6のようにして回転台座の略外周端部上に装着し、 図 1のようにして前 記の処理液を用いたディップスピンコ一ティングを行った （遠心振り切りは 3 0 O r p mで 3 0秒間)。 その後、 試験片がセットされたままの塗装治具を回転台 座から取り外し、 試験片を塗装治具にセットしたまま 1 3 0 °C X 1 0分間大気 中にて仮乾燥し、 続いて、 表面に水系処理液の塗膜が形成された試験片に対して 3 5 0 °C X 3 0分間大気中にて熱処理を行った。 次に、 試験片がセッ小された ままの塗装治具を上下反転させて再び回転台座に装着し、 前記と同様の工程でデ ィップスピンコ一ティングと仮乾燥と熱処理を行うことで、 試験片の表面に亜鉛 微粒子含有量が 9 0重量％の亜鉛微粒子分散耐食性被膜を形成した。 形成された 亜鉛微粒子分散耐食性被膜の膜厚は 1 0 / mであった （断面観察より）。 こうし て製造された亜鉛微粒子分散耐食性被膜を表面に有する試験片 1 0個に対して実 施例 1と同様の耐食性試験を行ったが、 試験後において外観変化 （発錡） を来し たものはなかった。\n\n【0093】実施例 6 ：\n\n【0094】実施例 2で調製した水系処理液に、 増粘剤としてヒドロキシェチルセルロース をその濃度が 1重量％となるように添加し、 粘度を 4 4 0 c Pに調整した。 この 処理液を用いて、 エタノールにて超音波洗浄 （脱脂処理） してから 1 5分間乾燥 させた実施例 1と同様の試験片の表面に、 実施例 5と同様にして、 亜鉛微粒子含 有量が 6 0重量％でアルミニウム微粒子含有量が 3 0重量％の亜鉛 ·アルミニゥ ム微粒子分散耐食性被膜を形成した。 形成された亜鉛 ·アルミニウム微粒子分散 耐食性被膜の膜厚は 1 0 mであった （断面観察より）。 こうして製造された亜 鉛■アルミニウム微粒子分散耐食性被膜を表面に有する試験片 1 Q個に対して実 施例 1と同様の耐食性試験を行ったが、 試験後において外観変化 （発鲭） を来し\n\nたものはなかった。\n\n【0095】実施例 7 ：\n\n【0096】実施例 3で調製した水系処理液に、 増粘剤としてヒドロキシェチルセルロース をその濃度が 1重量％となるように添加し、 粘度を 460 c Pに調整した。 この 処理液を用いて、 エタノールにて超音波洗浄 （脱脂処理） してから 15分間乾燥 させた実施例 1と同様の試験片の表面に、 実施例 5と同様にして、 亜鉛微粒子含 有量が 55重量％でアルミニウム微粒子含有量が 25重量％で錫微粒子含有量が\n\n【0097】10重量％の亜鉛 ·アルミニウム ·錫微粒子分散耐食性被膜を形成した。 形成さ れた亜鉛 ·アルミニウム ·錫微粒子分散耐食性被膜の膜厚は 10 mであった\n\n【0098】(断面観察より）。 こうして製造された亜鉛 \'アルミニウム ·錫微粒子分散耐食 性被膜を表面に有する試験片 10個に対して実施例 1と同様の耐食性試験を行つ たが、 試験後において外観変化 （発鲭） を来したものはなかった。\n\n【0099】実施例 8：\n\n【0100】実施例 1と同様にして調製した出発原料としてのェチルシリケ一卜を 20重 量％ (S i02換算） 含有する pHが 3の水溶液と、 有機分散剤 （商品名ソルス パース S 20000 :アビシァ社製） と平均長径が 20 mの鱗片状亜鉛微粒子 (概寸法 20 m 20 m 1 ^m) と平均粒径が 3 imの粒状アルミニゥ ム微粒子と平均粒径が 3 mの粒状錫微粒子と平均粒径が 1 mのアルミナ微粒 子を水に添加して調製した亜鉛 ·アルミニウム ·錫 ·アルミナ微粒子分散水系媒 体を混合し、 よく攪拌して 1N水酸化ナトリウムで pHを 7に調整し、 出発原料 としてのェチルシリケ一トと亜鉛微粒子とアルミニウム微粒子と錫微粒子とアル ミナ微粒子の合計配合割合が 70重量％ (ェチルシリケ一トは S i02換算） で、 出発原料としてのェチルシリケ一トと亜鉛微粒子とアルミニウム微粒子と錫微粒 子とアルミナ微粒子と有機分散剤の配合比率が、 9. 9 : 55 : 25 : 8 : 2 : 0. 1 (重量比：ェチルシリゲートは S i 02換算） である粘度が 16 c Pの水 系処理液を得た。 この水系処理液に、 増粘剤としてヒドロキシェチルセルロース をその濃度が 1重量％となるように添加し、 粘度を 465 c Pに調整した。 この 処理液を用いて、 エタノールにて超音波洗浄 （脱脂処理） してから 15分間乾燥 させた実施例 1と同様の試験片の表面に、 実施例 5と同様にして、 亜鉛微粒子含\n\n有量が 5 5重量％でアルミニウム微粒子含有量が 2 5重量％で錫微粒子含有量が 8重量％でアルミナ微粒子含有量が 2重量％の亜鉛 ·アルミニウム ·錫 ·アルミ ナ微粒子分散耐食性被膜を形成した。 形成された亜鉛 ·アルミニウム ·錫 ·アル ミナ微粒子分散耐食性被膜の膜厚は 1 0 mであった （断面観察より）。 こうし て製造された亜鉛 ·アルミニウム ·錫 ·アルミナ微粒子分散耐食性被膜を表面に 有する試験片 1 0個に対して実施例 1と同様の耐食性試験を行ったが、 試験後に おいて外観変化 （発鲭） を来したものはなかった。\n\n【0101】比較例 2 ：\n\n【0102】比較例 1で調製した処理液に、 増粘剤としてヒドロキシェチルセルロースをそ の濃度が 1重量％となるように添加し、 粘度を 4 2 0 c Pに調整した。 この処理 液を用いて、 エタノールにて超音波洗浄 （脱脂処理） してから 1 5分間乾燥させ た実施例 1と同様の試験片の表面に、 仮乾燥条件と熱処理条件を比較例 1と同様 にしたこと以外は実施例 5と同様にして、 亜鉛微粒子含有量が 9 0重量％の亜鉛 微粒子分散耐食性被膜を形成した。 形成された亜鉛微粒子分散耐食性被膜の膜厚 は 1 0 mであった （断面観察より）。 こうして製造された亜鉛微粒子分散耐食 性被膜を表面に有する試験片 1 0個に対して実施例 1と同様の耐食性試験を行つ たところ、 2 0 0時間経過時点において外観変化 （発鲭） を来したものが 6個存 在した。 産業上の利用可能性\n\n【0103】本発明は、 亜鉛微粒子分散耐食性被膜を表面に有する希土類系永久磁石の安定 かつ簡易な製造方法、 こうして製造される耐食性希土類系永久磁石、 各種形状の 薄型ワークに対する塗膜形成に適したディップスピンコ一ティング法およびヮ一 クの塗膜形成方法を提供することができる点において産業上の利用可能性を有す る。', '【0001】说明耐腐蚀稀土永磁体的制造方法，耐腐蚀稀土永磁体，工作浸渍旋涂方法和工作涂层成膜技术领域\n\n  【0002】本发明是一种稳定且简单的方法，用于生产在其表面具有分散有锌细颗粒的耐腐蚀涂层的稀土永磁体，以这种方式生产的耐腐蚀稀土永磁体，并且适用于在各种形状的薄工件上形成涂膜。 浸涂法和烟雾涂膜的形成方法技术领域本发明涉及浸涂法和烟雾涂膜的形成方法。 背景技术\n\n  【0003】以R_Fe_B系统永磁体为代表的N d_F e_B系统永磁体和以R_Fe_N系统永磁体为代表的Sm_Fe 1 N系统永磁体 稀土类永磁体，例如磁体，是由丰富的资源和廉价的材料制成的，并且具有很高的磁性能，因此，RF-B-B系永磁体在当今的各个领域得到了应用。 用于。\n\n  【0004】然而，由于稀土永磁体包含高反应性稀土元素：R，因此它容易在大气中被氧化腐蚀，如果不经任何表面处理即使用，会产生少量酸。 由于磁力，湿气等的存在，从表面开始腐蚀，导致焊料的产生，这导致磁体特性的劣化和变化。 此外，如果将包含铁的磁铁矿结合在诸如磁路的装置中，则铁会散布并污染周边部分。  ·\n\n  【0005】有很多赋予稀土类永磁体耐腐蚀性的方法，其中一种方法是使用硅化合物作为原料在稀土永磁体的表面上形成耐腐蚀涂层。  .. 近年来，为了进一步提高这种耐蚀涂层的性能，已经进行了各种研究。\n\n  【0006】例如，在日本特开20000-18082813号公报（专利文献1）中，将由分散有锌细颗粒的碱性硅酸盐水溶液构成的处理液用稀土类永磁体处理。 在磁体表面涂覆之后，进行热处理以获得锌细颗粒分散的耐腐蚀涂层。\n\n 被提议。 该方法利用由碱金属硅酸盐制成的涂层的耐腐蚀性和作为电位的基础的锌颗粒的牺牲防腐蚀作用，并且可以赋予稀土永磁体高的耐腐蚀性。 期望作为一种方法。 但是，在该方法中，为了使锌微粒均匀地分散在用于形成分散有锌微粒的耐蚀涂层的处理液中，必须使处理液为碱性。 因此，当将处理液施加到稀土永磁体的表面时，在磁体的表面上产生构成磁体的金属的氢氧化物，并且由这种金属氢氧化物制成的层形成磁体。 由于表面被覆盖的事实，难以形成具有优异粘附性的锌细颗粒分散耐蚀涂层，并且使用硅酸铝作为起始原料的涂层的柔韧性差。 存在诸如容易破裂和麻烦的废液处理的问题。\n\n  【0007】此外，在日本特开2000-011 143 949号公报（专利文献2）中，含有含硅化合物和平均粒径为1nm〜100nm的无机微粒。 已经提出了一种方法，其中将处理过的液体施加到稀土基永磁体的表面上，然后进行热处理以形成分散有无机细颗粒的耐腐蚀涂层。 该方法用于在稀土类永磁体的表面上使用硅有机化合物作为起始材料形成薄且致密的耐腐蚀涂层，并将具有特定平均粒径的无机细颗粒分散在涂层组分中。 这在膜形成过程中减轻了膜的内部应力，并防止了诸如裂缝之类的物理缺陷的出现。 还期望该方法为能够对稀土永磁体赋予高耐腐蚀性的方法。 然而，考虑到难以将纳米量级的无机细颗粒均匀地分散在水中，在处理液的制备中，主要使用有机溶剂如低级醇，并向其中添加少量的水。 由于必须在酸性条件下使硅有机化合物水解聚合而形成溶胶溶液并分散无机微粒，因此，制备的处理液为酸性，因此处理液为稀土类。 当施加到永磁体的表面上时，引起磁体腐蚀的问题，由于有机溶剂的挥发，处理液的组成容易波动，对环境有不利影响的问题，并且废液处理麻烦。 如果有，那就有问题。\n\n  【0008】因此，本发明是稀土类永久磁铁，其表面上具有分散有锌微粒的耐蚀涂层。\n\n 本发明的目的在于提供一种稳定且简单的上述制造方法，以这种方式制造的耐腐蚀稀土永磁体，适用于在各种形状的薄工件上形成涂膜的浸涂法以及该工件的涂膜形成方法。 去做。\n\n  【0009】发明公开\n\n  【0010】鉴于上述要点而做出的本发明的耐腐蚀稀土类永磁体的制造方法，如权利要求1的范围中所述，具有硅酸烷基酯的水解聚合反应产物，且平均粒径为1。  π！ 用含有〜50 m的锌细颗粒且ρH为6至8且粘度为100 cP或更小的水基处理溶液涂覆稀土永磁体的表面后，温度为250°（：〜 通过在400℃下进行热处理来形成分散有锌细颗粒的耐腐蚀涂层。权利要求2的制造方法与权利要求1的制造方法相同。 细的锌颗粒为鳞片形式。\n\n  【0011】此外，在根据权利要求3的制造方法中，在根据权利要求1的制造方法中，作为起始原料的硅酸烷基酯与水处理液中的锌细颗粒的总混合比为 其特征在于其为40重量％至90重量％（硅酸烷基酯转化为Si 02）。\n\n  【0012】此外，在根据权利要求4的制造方法中，在根据权利要求1的制造方法中，作为起始原料的硅酸烷基酯与水性处理液中的锌细颗粒的混合比为 其特征在于为1∶1至1∶19（重量比：硅酸烷基酯总计为Si〇2）。\n\n  【0013】此外，根据权利要求5所述的制造方法，其特征在于，在根据权利要求1所述的制造方法中，将有机分散剂添加到所述水性处理液中。\n\n  【0014】根据权利要求6的制造方法，是根据权利要求1所述的制造方法，其中，分散有锌微粒的耐腐蚀涂层的J3厚度为1m至50m。 特色功能。\n\n  【0015】根据权利要求7的制造方法，其特征在于，在根据权利要求1的制造方法中，其他无机细颗粒进一步分散在分散有锌细颗粒的耐腐蚀涂层中。  ..\n\n  【0016】此外，权利要求8所述的制造方法是权利要求1所述的制造方法。\n\n 该方法的特征在于，通过浸涂法将水性处理液涂布在稀土永磁体的表面上。\n\n  【0017】此外，根据权利要求9的制造方法是根据权利要求8的制造方法，其中使用具有300cP至600cP的粘度的水性处理液。 它的特点是表演。\n\n  【0018】此外，在根据权利要求10的制造方法中，在根据权利要求8的制造方法中，使用了可绕着竖直方向的中心轴旋转的旋转基座的大致外周端。 多个稀土基永磁体被保持在该部件上，并且将容纳稀土基永磁体的旋转基座浸入水基处理液罐中，以将水基处理液浸涂并涂覆在稀土基永磁体上。 其特点是浸涂法是通过从内部除去水处理液并旋转旋转的基座以旋转掉附着在稀土永磁体上的多余的水处理液而进行的。\n\n  【0019】此外，在根据权利要求11的制造方法中，在根据权利要求10的制造方法中，在所述旋转基座的大致外周端上设置有多个稀土类永磁体。 其特征在于被保持为环形。\n\n  【0020】权利要求12所述的制造方法，其特征在于，在权利要求10所述的制造方法中，所述稀土类永磁体是薄磁体。\n\n  【0021】根据权利要求13所述的制造方法，是根据权利要求12所述的制造方法，其中，所述薄磁体的最宽表面相对于所述旋转基座的径向大致平坦。 它的特点是连续保持。\n\n  【0022】根据权利要求14所述的制造方法，是根据权利要求13所述的制造方法，其中，当将多个薄磁铁安装在所述旋转台座的大致外周端时，安装多个薄磁体。 特殊之处在于，将磁体设置为大致环形，使得每个磁体的最宽表面在分离状态下基本平行于旋转基座的径向。\n\n  【0023】根据权利要求15所述的制造方法，是根据权利要求12所述的制造方法，其中，所述薄磁体具有平板形状，环形或弧形。 并具有特点。\n\n  【0024】此外，权利要求16所述的制造方法是权利要求14所述的制造方法。\n\n 在该方法中，在进行浸涂之后，从旋转基座上取下仍然放置有薄磁铁的涂装夹具，并在放置在任何地方的薄磁铁上进行热处理。 表征。\n\n  【0025】此外，根据本发明的稀土永磁体，如权利要求17所述，在由硅酸烷基酯制成的涂料组分中使用平均粒径为1m至50m的锌。 其特征在于具有耐腐蚀涂层，其中微粒分散在表面上。\n\n  【0026】此外，权利要求18所述的稀土类永磁体是权利要求17所述的稀土类永磁体，其中，所述耐腐蚀涂层中的锌微粒的含量为50重量％〜20重量％。 其特征在于为95重量％。\n\n  【0027】根据权利要求19所述的稀土类永磁体是根据权利要求17所述的稀土类永磁体，其中锌从所述磁体的表面扩散到内部。 并具有特点。\n\n  【0028】权利要求20所述的稀土类永磁体是通过权利要求1所述的制造方法制造的权利要求17所述的稀土类永磁体。 表征。\n\n  【0029】此外，如权利要求21所述，本发明的工件的浸渍旋涂方法是可绕以垂直方向的中心轴为旋转轴的旋转台座的大致径向外周端部。 固定多个工件，然后将旋转基座浸入到涂料槽中，以将涂料浸入工件中，然后从液体中移出并旋转旋转基座，以使多余的涂料粘附到工件上。 它的特点是离心甩开。 \n\n【0030】此外，根据本发明的在工件上形成涂膜的方法，如权利要求22所述，所述工件形成在可绕竖直方向上的中心轴旋转的旋转基座的大致外周端部上。 安装时，请使用可将多个工件设置为大致环形且每个工件彼此分离的涂覆夹具。 将涂料浸入涂料中后，将其从液体中取出，旋转底座以离心分离掉附着在工件上的多余涂料，并在安装工件时旋转涂布夹具。 其特征在于，如果需要，可以将其从基座上移开，并且可以将在任何位置涂覆在涂层夹具中的工件干燥。\n\n  【0031】根据本发明，稀土基永磁体在其表面上具有分散有锌细颗粒的耐腐蚀涂层\n\n 本发明提供了一种稳定且简单的上述制造方法，以此方式制造的耐腐蚀稀土永磁体，适用于在各种形状的薄工件上形成涂膜的浸涂法以及该工件的涂膜形成方法。 附图的简要说明\n\n  【0032】图1是根据本发明的用于工件的浸涂法的示例的示意性工艺图。 图2是表示将多个平板状的工件保持在本发明的旋转台座的大致外周端部上的状态的一例的示意图。\n\n  【0033】图3是表示将多个环状的工件保持在本发明的旋转基座的大致外周端部上的状态的一例的示意图。\n\n  【0034】图4是本发明的涂覆夹具的示例的示意性透视图。\n\n  【0035】图5是涂覆夹具的示意图，其中设置了本发明的多个平板状工件。 图6是表示在旋转台座的大致外周端安装有设置有多个平板状的工件的本发明的涂布夹具的状态的一例的示意图。\n\n  【0036】图7是实施例4中的EPMA二次电子图像。\n\n  【0037】图8是相同的锌X射线图像。\n\n  【0038】图9显示了铁质X射线图像。 实施本发明的最佳模式\n\n  【0039】在本发明中，分散有锌微粒的耐腐蚀涂层的pH为6至8，其包含硅酸烷基酯和锌微粒的水解解聚反应产物，该锌锌微粒的平均粒径为1μm至50m。 它是通过将粘度为100 cP或更低的水性处理液施加到稀土永磁体的表面上，然后在250°C至400°C的温度下进行热处理而形成的。 这样形成的分散有锌微粒的耐蚀涂层使稀土永磁体具有高耐蚀性，并且由于锌从磁体主体的表面扩散到内部而具有优异的粘附性。\n\n  【0040】硅酸烷基酯的实例包括由通式表示的那些：S inO（n—1（OR）（2 n +2）。 式中，R为烷基，其实例包括具有1-4个碳原子的低级烷基，例如甲基，乙基，丙基和丁基。\n\n 然而，其中，乙基价格便宜，没有毒性，并且易于处理。\n\n  【0041】（硅酸乙酯）是优选的。 另外，n为1以上的整数，但是为了形成致密的膜，n优选为10以下的整数。\n\n  【0042】此外，作为锌微粒，使用平均粒径为1m〜50m的锌微粒。 这是因为，当平均粒径小于1m时，锌微粒会在水性处理液中引起二次凝集，而当平均粒径大于5O ^ m时，水性处理液中的平均粒径大。 这是因为氧化锌的细颗粒可能沉降，并且在任何情况下，都可能难以制备其中具有优异的储存稳定性的氧化锌的细颗粒均匀分散的水性处理液。 锌细颗粒的平均粒径为2！  〜30 m是理想的，5 m〜20 / im是更理想的。 锌细粒可以具有任何形状，但是为了防止在分散有锌细粒的耐腐蚀涂层中出现针孔，有利的是将锌细粒紧密地堆积在涂层组分中。 此外，为了使亚尖锐度从磁体的表面分散到内部，锌细粒相对于磁体的接触面积较大是有利的。 因此，从该观点出发，锌微粒优选为鳞片状。 锌微粒为鳞片状时，锌微粒的平均粒径是指平均主轴。\n\n  【0043】作为起始原料的硅酸烷基酯与水处理液中的锌细颗粒的总混合比为40重量％至90重量％（硅酸烷基酯被转换为Si〇2）。 期望含量为60重量％至80重量％。 如果总混合比小于40重量％，则为了获得具有表现出足够性能的膜厚的锌细颗粒分散的耐腐蚀涂层，制造步骤的数目可能必须比必要的增加更多。  ％，可能会影响水性处理液的储存稳定性。\n\n  【0044】作为起始原料的硅酸烷基酯与水处理液中的锌细粒的混合比使得所形成的分散有锌细粒的耐腐蚀涂层的锌细粒含量为50重量％至95重量％。 如上所述，该比例优选为1：1至1：1（重量比：硅酸烷基酯被转化为S i 02），并且更优选为1：3至1：1-10。 如果在所形成的分散有锌微粒的耐腐蚀涂层中锌微粒的含量小于50重量％，则充分表现出将锌微粒分散在J3成分中的效果。\n\n 另一方面，它可能不会挥发，而如果其含量大于95％（重量），则可能不能充分展现出以烷基硅酸盐为起始材料的作为耐腐蚀涂层的原始性能。\n\n  【0045】如上述专利文献2中所述，当施加到稀土类永磁体的表面上的水基处理液的pH小于6时，将其pH定义为6至8。 另一方面，如果pH高于8，则可能引起磁体的腐蚀，并且如专利文献1所述，可能不会形成粘附性优异的分散有锌微粒的耐蚀涂层。\n\n  【0046】当水基处理液的粘度超过100cP时，将施加到稀土基永磁体表面的水基处理液的粘度定义为不大于100cP。 这是因为可能难以形成具有均匀厚度的分散有锌微粒的耐腐蚀涂层。\n\n  【0047】具有优异均质性的水基处理液的制备例如通过在酸性条件（pH约3至4）或碱性条件（pH 10至12）下水解硅酸烷基酯来进行。 在将平均粒径为1m至50m的锌细颗粒添加至进行分解缩聚反应的水溶液中之后，可以将pH调节至6至8，并且可以将粘度保持或调节至100cP以下。 期望使用（更优选粘度为50cP以下，更优选25cP以下）。 另外，当烷基硅酮在酸性条件下水解和聚合时，可以使用例如氢氧化钠调节pH。 当硅酸烷基酯在碱性条件下水解和聚合时，例如可以使用盐酸调节pH。\n\n  【0048】在制备水性处理液的阶段中硅酸烷基酯水解和聚合的原因是使形成的膜致密。 硅酸烷基酯的水解聚合反应不必一定要水解所有使用的烷基甲硅烷基基团，并且其一部分可以进行水解聚合反应。 水解聚合反应的程度可以通过酸或碱的添加量和用作引起水解聚合反应的介质的水的量来调节。 如果烷基甲硅烷基的水解和聚合反应的程度高，则水溶液的粘度可能超过100cP。 即使粘度一旦超过100cP，也可以通过添加温水来降低粘度，但是比水性处理液更好。\n\n 为了确保均匀性，如果在水解聚合反应期间水溶液的粘度可能超过100 cP，请适当添加水以将粘度调节至100 cP。 最好不要过去。 另外，当期望使水基处理液的表面张力适合于便于形成具有期望膜厚的膜的目的时，例如，纤维素基增稠剂（羟基 可以通过添加例如水溶性纤维素口酯如tyl纤维素，甲基纤维素，甲基羟丙基纤维素，乙基羟乙基纤维素和甲基乙基纤维素来调节粘度。 它可以。 如果为了增加要形成的膜的膜厚而将水性处理液的粘度增加到100 cP或更高，则一旦准备好增加粘度就向水性处理液中添加增稠剂。 希望通过提高它来做到这一点。\n\n  【0049】当将锌细颗粒添加到通过使硅酸烷基酯进行水解聚合反应而获得的水溶液中时，期望使用有机分散剂以使锌细颗粒均匀地分散在水性处理液中。 通过例如将锌细颗粒添加到含有有机分散剂的水中来将有机分散剂添加到水性处理液中，以制备锌细颗粒分散的水性介质，其中锌细颗粒均匀地分散。 可以通过将分散有细颗粒的水性介质和通过使烷基二氧化硅链进行水解聚合反应而获得的水溶液混合来进行。 作为有机分散介质，阴离子型分散介质（脂肪族多元羧酸，聚酯聚酯羧酸盐，高分子量聚酯多元胺盐，高分子量多元羧酸长链胺盐等），非离子性 分散介质（聚氧乙烯烷基醚和脱水山梨醇酯等羧酸盐，磺酸盐和铵盐），聚合物分散介质（水溶性环氧羧酸盐，磺酸盐和铵盐的羧酸盐，苯乙烯等） 考虑到与锌颗粒的亲和力和成本，优选使用单丙烯酸共聚物，Nikai等。\n\n  【0050】请注意，施加到稀土永磁体表面的水性处理液的粘度与具有足以表现出足够特性的膜厚的锌细颗粒分散耐腐蚀涂层的粘度相同，而无需重复过多的制造过程。 为了形成，期望为5cP以上。\n\n  【0051】当将水基处理液施加到稀土永磁体的表面时，浸涂法，喷涂法，旋涂法，浸涂-旋涂法。 \n\n可以采用。 为了提高与形成在稀土永磁体的表面上的分散有锌细颗粒的耐腐蚀涂层的粘附性，可以在施加水性处理液之前对磁体进行砂磨处理或酸洗处理。 好。\n\n  【0052】期望通过浸涂法将水性处理液涂布到稀土永磁体的表面上，以形成水性处理液的更均匀的涂膜。 特别地，多个稀土类永磁体被保持在可绕竖直中心轴旋转的旋转基座的大致外周边缘上，并且，保持稀土类永磁体的旋转基座用作水性处理液罐。 将稀土基永磁体与水基处理液一起浸入，从溶液中取出，旋转底座，然后在稀土永磁体上甩掉多余的水基处理液，以将其离心分离。 旋涂是理想的。\n\n  【0053】作为在薄工件的表面上形成例如具有约1O im的膜厚度的薄涂膜的方法，通过将工件浸入油漆浴中然后将其浸入，然后 可以采用浸涂法，其中将涂料从机器中取出并高速旋转以甩掉多余的涂料。 作为迄今为止已知的薄浸涂法，例如，在日本特开平7-21088号公报中提出了一种作为光盘的保护膜涂布法的方法。 在这种方法中，将多个基板以规则的间隔垂直放置在水平主轴上，并在围绕主轴低速旋转的同时，将除基板中心部分以外的部分浸入保护膜材料中以施加该材料， 这是因为将物料拉起并最终高速旋转以甩掉物料。 另外，在日本特开平3-86271号公报中，使用吊架将物品的涂布面（平坦面）保持为大致水平，使该吊架和被涂布物通过整个物品的重心。 已经提出了一种浸涂法，其特征在于包括通过绕垂直线作为旋转轴旋转涂料来离心掉涂料的步骤。 此外，在日本未审查专利申请公开第2000-0 165 4 56号中，使具有多个凹槽的一对保持构件与凹槽彼此面对，并且相对的凹槽保持晶片的外围。 已经提出了一种方法，其中通过旋转载体使在载体中保持的多个晶片上的载体旋转并干燥，从而通过使用晶片载体使其凹槽基本上沿旋转加速度方向取向。\n\n w ^\n\n  【0054】当对大量薄工件采用浸涂旋涂法时，无论耙子的形状如何，都可以在所有工件上实现均匀涂层而不会引起膜厚变化。 理想的。 但是，考虑到这一点，上述专利文献中描述的每种方法或多或少具有缺点。 具体地说，在日本专利申请特开No.7-201 088中描述的方法的缺点在于，由于必须将工件保持在其中心，所以该方法只能应用于环形工件。  .. 此外，在这种方法中，水平主轴与环形工件的内周表面接触，并且工件本身由于两者之间产生的摩擦力而旋转，因此在工件和主轴之间产生的摩擦力会发生变化。 如果这样，则工件的旋转速度将发生变化，并且如果可能无法对所有工件进行均匀的涂层涂覆，则很难高速旋转油墨。 例如，当涂覆粘度大于500cP的工件时，存在的缺点是过度粘附的涂料可能不能被充分地甩掉。 另外，在日本专利公开No.3-8 6 2 71中描述的方法中，由于工件的平面几乎保持水平，因此存在粘附在上表面和下表面之间的涂料量不同的可能性。 有缺点。 此外，在日本专利特开No.2000-0 166456中描述的方法中，由于工件的一个平面面向旋转轴被保持，因此每个工件的旋转速度根据保持位置而变化。 由于它们是不同的，因此存在无法均匀涂覆所有工件的风险。\n\n  【0055】然而，根据本发明提出的浸涂法，即使在大量薄工件上也可以形成均匀的涂膜而不会引起膜厚的变化。\n\n  【0056】以下，根据需要参照附图对本发明提出的浸涂法进行说明，但本发明提出的浸涂法应理解为限于以下说明。 这是不会做的事情。 在本发明中提出的双链骨架涂覆方法可以应用于任何形状的涂覆，而不受工件形状的限制，但是特别是对于诸如平板，环形或弓形的薄工件。 因此，在下面的描述中，将以将本发明的方法应用于平坦工件和环件工件的涂覆的情况为例进行描述。\n\n w ^\n\n  【0057】\n\n  【0058】图1是本发明提出的浸涂法的一个例子的示意性工序图。  （A）首先，在可绕铅垂方向的中心轴1旋转的旋转台​​座2的大致外周缘形成有多个平板状的耙子X。 每个最宽的平面（平面）保持为大致环形，从而基本平行于径向。  （b）接着，通过气缸3使涂料箱4上升，将保持耙子X的旋转台座2浸入涂料箱4内，进行工件X的浸涂。  （c）接着，通过气缸3使涂料箱4下降，并从液体中取出旋转基座2。  （d）最后，以中心轴1为旋转轴（最好至少使旋转方向反转一次）使带有马达5的旋转台座2旋转，以去除附着在工件X的平面上的多余涂料。 离心机关闭。 根据该方法，即使涂料具有相对较高的粘度（例如，粘度超过200cP），也可以调节旋转基座2的尺寸并控制旋转速度。 因此，由于可以自由地调节附着在工件X的平坦表面上的涂料的量，因此也可以自由地调节所形成的涂膜的膜厚。\n\n  【0059】期望旋转基座2的基座表面具有网眼形状，从而不会积聚涂料。\n\n  【0060】图2（a）示出了多个平板工件X以大致环形的形状保持在旋转基座2的外周边缘上，使得它们的各个平面基本平行于径向方向。 图2是完成状态的一例的示意性局部立体图。 图2（b）是从上方观察保持有岩石X的旋转基座2的图。 工件X被放置在放置在旋转基座2上的两个保持构件（优选地具有半圆形横截面的杆状）11上。 如图1所示，可以将工件X直接放置在旋转基座2上，但是通过采用这种放置方法，可以使工件X的底面上的放置标记最小化。 可以转换（参见图2（c））。\n\n  【0061】通过相对于保持构件11在垂直方向上设置的垫片12，将各个平板状工件X保持为彼此分离的状态。 垫片12还具有防止工件X滚动的功能。 相邻的垫片12和12之间的距离优选地大于工件X的厚度。 工件两侧的垫片X 1 2\n\n 这是因为当它们彼此接触时，接触标记变得明显。 另外，期望间隔件12具有圆形的横截面。 这是因为通过旋转旋转基座2可以使在工件X的平面上产生的接触痕迹最小化。\n\n  【0062】在步骤（d）中，当通过电动机5使旋转基座2以中心轴1为旋转轴旋转，以旋转掉附着在平坦工件X的平坦表面上的涂料时，  X由于离心力而趋向于放射状，但是固定在旋转台座2上并以未图示的方式水平配置的离心冲击控制棒1 3抵接于地震X的外侧。 并且具有限制工件X向径向突出的功能。 此外，相对于离心突起限制杆13沿旋转轴方向设置的间隔件14具有在离心分流时限制工件X的移动的功能。\n\n  【0063】在图3（a）中，多个环形工件Y以大致环形的形状被保持在旋转基座2的大致外周端上，使得它们的各自的平面基本平行于径向方向。 图2是状态的一例的示意性局部立体图。 工件Y通过其环部悬挂并保持在水平悬挂构件15上，该水平悬挂构件15通过未示出的构造固定在旋转基座2上。 水平悬挂构件15优选地是具有圆形横截面的杆。 此外，期望水平悬挂构件15的悬挂有工件Y的部分例如被切成V形（见图3（b））。 通过水平悬挂构件15的这种构造，可以使在耙子Y的环部上产生的悬挂痕迹最小化。\n\n  【0064】当在多个薄工件上进行浸涂时，如图1至3所示，每个薄工件都可以直接固定在旋转基座上。 当将多个薄工件安装在旋转基座的外周边缘上时，它们以圆形形状彼此分离，使得薄工件的最宽表面大致平行于旋转基座的径向。 您可以使用可以设置的涂层夹具。\n\n  【0065】图4示出，当安装在旋转基座的外周边缘上时，多个平板形工件彼此分离，并且它们的平面基本平行于旋转基座的径向。 图2是可以如上所述地设置成大致环形的涂覆夹具的示例的示意性透视图。 涂覆夹具Z在水平方向上平行地布置，以保持多个平板状工件X，使得其平面在各个工件彼此分离的状态下基本彼此平行。 用垫片22和固定有工件X的夹具夹持两个保持杆21。\n\n w ^\n\n  【0066】为了防止工件X安装在旋转基座的外周边缘上并且旋转基座旋转时由于离心力而径向弹出，使其与工件X的外侧表面接触。 它至少具有带有间隔件24的离心弹出控制杆23，该间隔件在水平方向上平行布置。 为了将各个工件X保持为彼此分离的平面，使它们的平面与铅垂方向大致平行，并且为了使工件X与保持杆21之间具有空间而保持工件X。 它还具有两个杆状构件25，其具有平行于保持杆21布置的间隔件26。 当夹具上下颠倒时，用于将工件X保持在上级的保持杆21用作杆状构件25。 \n\n【0067】图5是其中设置有多个薄工件X的涂覆夹具Z的示意性正视图（a）和D-D截面图（b）。\n\n  【0068】保持杆21和杆状构件25优选具有圆形的截面。 这是因为可以使在薄工件X的下表面上出现的放置痕迹最小化。 此外，理想的是，离心突起限制杆23也具有圆形截面。 这是因为可以使在薄工件X的外侧表面上产生的接触痕迹最小化。 另外，期望隔离物22以及隔离物24和隔离物26也具有圆形的横截面。 这是因为可以使在薄工件X的平坦表面上产生的接触痕迹最小化。 注意，保持杆21和杆状构件25不必必须具有两件，而可以具有一件。 图4所示的涂布夹具Z例如如下使用。 图6是通过已知的可拆卸的安装装置将设置有多个平板状工件X的涂覆夹具Z安装在旋转台座2的大致外周端上的状态的示例的局部平面示意图。 这是一个数字。 根据图1所示的示意性工艺图，涂料桶4由气缸2提起，并且将配备有工件X设置的涂覆夹具Z的旋转基座2浸入涂料桶4中，以将涂料施涂到工件X上。 进行浸涂。 接下来，通过气缸3使涂料箱4下降，并从液体中取出旋转基座2。 最后，通过电动机5使旋转台座2绕中心轴1旋转，以旋出过度附着在工件X的平面上的涂料，从而完成浸涂。 经过任意时间后，将仍放置有工件X的涂覆夹具Z从旋转基座2上移开，并将仍放置在涂覆夹具Z上的工件X在所需位置干燥（自然 干的\n\n 或通过加热干燥。 此后，将仍放置有工件X的涂覆夹具Z上下翻转并再次安装在旋转基座2上，并且以与上述相同的过程再次进行浸涂。 以此方式，在工件X上出现的放置标记和接触标记的位置在第一涂层和第二涂层之间变化，因此第二涂层允许完成第一涂层。 由于X上产生的涂层标记和接触标记也会被涂漆，因此可以更均匀地喷涂工件X。 之后，将具有工件X的涂布夹具Z从旋转台座2上取下，并且仍然放置在涂布夹具Z上的清洁夹具Z在任何地方进行干燥（自然干燥或加热）。 通过进行干燥，即使在大量的作业中也可以有效地形成均匀的涂膜而不会引起膜厚偏差。\n\n  【0069】当通过浸涂法将水性处理液施加到稀土永磁体的表面时，请使用粘度为300cP至600cP的水性处理液。 可以形成更均匀的涂膜。 如上所述，期望的是，具有这样粘度的水性处理液通过向曾经制备的水性处理液中添加纤维素类增稠剂等而使粘度提高。 理想的是将其加入以使其在含水处理液中的含量为1-2％（重量）。\n\n  【0070】在表面上形成有水性处理液的被膜的稀土类永久磁铁的热处理在250〜400℃下进行。 当在这些温度条件下进行热处理时，在成膜过程中，含水处理液中所含的锌微粒中的一些从磁体的表面适当地扩散到内部。 形成细颗粒分散的耐腐蚀涂层。 如果热处理温度低于250℃，则不仅锌不能充分扩散，而且水也不能充分蒸发而残留在稀土永磁体的表面上。 另一方面，如果温度高于400℃，则锌的过度扩散会不利地影响磁体特性。 热处理时间优选为例如10分钟至120分钟。 将在其表面上涂覆有水基处理液的稀土类永磁体在100°C至170°C的温度下暂时干燥，然后进行热处理，以获得更均匀的分散锌颗粒的耐腐蚀涂层。 可以形成。 分散有锌微粒的耐腐蚀涂层优选形成为具有1m至50μm，更优选5m至15m的膜厚度。\n\n 是。 如果膜厚小于1m，则不能充分表现出分散有锌细颗粒的耐蚀涂层的特性，而如果膜厚超过50μm，则将充分确保稀土永磁体的有效体积。 这是因为存在无法实现的风险。\n\n  【0071】其他无机细颗粒可以进一步分散在分散有锌细颗粒的耐腐蚀涂层中。 作为无机细颗粒，例如，可以列举出诸如铝，锡，锰，镁，钛和镍之类的潜在贱金属如锌的细颗粒。 例如，通过将铝细颗粒与锌细颗粒一起分散，可以有效地防止由于锌细颗粒的腐蚀而产生白锈（碱性碳酸锌）。 此外，为了进一步减少涂层中可能出现的针孔并进一步提高涂层的耐腐蚀性，以及涂层中的锌细颗粒，A 12〇3和T i〇2和 诸如S i 02和My power之类的氧化物微粒可能会分散。 当其他无机细粒与锌细粒一起分散时，形成的耐腐蚀涂层中锌细粒和其他无机细粒的总含量优选为95重量％以下。\n\n  【0072】以N d -F e -B系统永磁体为代表的R-F e-B系统永磁体和以Sm-Fe-N系统永磁体为代表的稀土系统永磁体的R-Fe。  —包括已知的稀土基永磁体，例如N基永磁体。 其中，基于R-Fe-B的永磁体是期望的，因为它们具有特别高的磁性能并且在批量生产和经济效率方面优异。 稀土类永磁体可以是烧结磁体或池磁体。\n\n  【0073】稀土永磁体中的稀土元素（R）为Nd，Pr，Dy，Ho，Tb，Sm或La，Ce，Gd，Er，Eu中的至少一种， 包含Tm，Yb，Lu和Y中至少之一的那些是期望的。\n\n  【0074】通常，R的一种就足够了，但实际上，为了方便使用，可以使用两种或多种的混合物（例如，稀土金属和Zidymium）。\n\n  【0075】此外，Al，Ti，V，Cr，Mn，Bi，Nb，Ta，Mo，W，Sb，Ge，Sn，Zr，Ni，Si，Zn，Hf，G 通过添加a中的至少一个，可以改善矫顽力和退磁曲线的矩形度，改善可制造性，并降低成本。 也可以通过用Co代替F e的一部分来获得。\n\n 可以改善温度特性而不损害磁体的磁特性。 例\n\n  【0076】以下，将参考实施例和比较例更详细地描述本发明，但是本发明不应解释为限于此。\n\n  【0077】示例1：\n\n  【0078】作为起始原料，将电解铁，硼铁和作为R的Nd混合到所需的磁体组成中，熔融熔化后，通过机械粉碎方法粗粉碎，然后细粉碎，得到3 / 获得m〜l 0 m的细粉后，在10 k〇e的磁场中成型，并在氩气氛中在1100°C下烧结1小时，得到了烧结体。 在600℃下进行600小时的时效处理2小时，然后使用从组成为15Nd-7B-78Fe的磁体切出的36mmX32mmX3mm的平板烧结磁体试验片进行以下实验。 我去了。\n\n  【0079】A.添加硅酸乙酯40（硅酸乙酯是含有40重量％的Si〇2当量的无色透明液体），并用1N盐酸将pH调节至3。 进行水解聚合反应以制备包含20重量％（换算成Si 02）的硅酸乙酯作为原料的水溶液。 通过将这种水溶液，有机分散剂（商品名：Solspers S 20000：由Abyssia制造）和平均主轴长为20 m（约20 mx 20 mx 1 ^ m）的鳞片状锌细颗粒制成的氧化锌。 混合分散有细颗粒的水性介质，充分搅拌并用1N氢氧化钠调节pH至7，作为起始原料的硅酸乙酯和锌细颗粒的总配比为70重量％。 在02的转化率下），硅酸乙酯作为起始原料，锌细颗粒和有机分散剂的混合比为9.9∶90∶0.1。\n\n  【0080】（重量比：硅酸乙酯为Si 02当量），得到粘度为15cP的水性处理液。\n\n  【0081】B.将乙醇进行超声波清洗（脱脂处理）并自然干燥15分钟，将其浸入上述水性处理液中。 将从水性处理溶液中取出的试验片保存在离心干燥机中，并以300 rpm摇动30秒以除去附着在试验片表面上的多余的水性处理液，然后在100℃X 5下进行。 暂时在大气中几分钟\n\n 干的 将通过暂时干燥涂布在表面上的水性处理液而获得的试验片再次浸入水性处理液中。 以与上述相同的方式从水基处理液中取出附着于试验片表面的多余的水基处理液后，相对于在表面形成有水基处理液的被膜的试验片320°。 将CX在大气中热处理10分钟，以在测试件的表面上形成锌细颗粒分散的耐腐蚀涂层，该锌细颗粒含量为90重量％。 所形成的分散有锌微粒的耐腐蚀涂层的厚度为约10μm/ m（从截面观察）。\n\n  【0082】C。通过在表面上分散有锌细颗粒的耐蚀涂层的10个试验片上在35℃下将5％盐水喷500小时来进行耐蚀性试验。 没有变化（加注）。\n\n  【0083】示例2： \n\n【0084】以与实施例1相同的方式制备的，含有20重量％（按Si〇2当量）硅酸乙酯作为起始原料的水溶液和有机分散剂（商品名）  （Sols Perth S 20000：由Abyssia制造），平均主轴线为20 m的锌鳞颗粒，平均粒径为3的粒状铝颗粒（粗粒度20 imX 20 mX 1 ur）和平均粒径为3的锌被添加到水中。 混合铝颗粒分散的水介质，用1N氢氧化钠充分混合并调节pH值至7.乙基硅油为起始原料，锌颗粒和铝颗粒的总混合比例为70％重量（乙基硅 1以S i 02计算，作为原料的硅酸乙酯，锌颗粒，铝颗粒和有机分散剂的混合比为9.9∶60∶30∶0.1（重量）。 比例：硅烷基为SI 02（换算），得到粘度为13cP的水性处理液。 使用该水性处理液，以与实施例1相同的方式，将锌微粒含量为60wt％，铝微粒含量为30wt％的锌-铝微粒分散体耐蚀性以与实施例1相同的方式施加至试验片的表面。 形成膜。 所形成的分散有锌铝微粒的耐腐蚀涂层的厚度为约10m（从截面观察）。 对分散在如此制得的表面上的锌-铝细颗粒的耐腐蚀性试验进行了与实施例1相同的耐腐蚀性试验，但是在试验后未观察到外观变化。 它是\n\n  【0085】示例3：\n\n 以与实施例1相同的方式制备的，含有20重量％（换算为Si〇2）硅酸乙酯作为起始原料和有机分散剂（商品名Solspace）的水溶液 S 20000：由Abyssia制造），平均长轴为20 m的鳞片状锌细颗粒（近似尺寸为20 iimx 20πι1），平均粒径为3的粒状铝细颗粒和平均粒径为3 m的粒状锡细颗粒。 将分散在水中的锌-铝-锡细颗粒与水介质混合，充分搅拌，并用1N氢氧化钠将pH调节至7，并混合作为起始原料的硅酸乙酯，锌细颗粒和铝细颗粒。 氧化锡和锡细颗粒的总混合比例为70％重量（硅酸乙酯按S io2计算），作为原料的硅酸乙酯，锌细颗粒，铝细颗粒，锡细颗粒和有机分散剂的混合比例为9％。  .9：55：25：10：0.1（重量比：将硅酸乙酯转化为Si（〇〇〇〇〇）），得到粘度为18cP的水性处理液。 使用该水性处理溶液，以与实施例1相同的方式获得与实施例1相同的试件表面，其中锌细颗粒含量为55重量％，铝细颗粒含量为25重量％，锡细颗粒含量为10重量％。 形成％锌/铝/锡细颗粒分散的耐腐蚀涂层。 形成的分散有锌-铝-锡细颗粒的耐腐蚀涂层的厚度为约10m（从横截面观察）。 对如此制作的表面具有分散有锌铝锡微粒子的耐蚀涂层的10个试验片，进行了与实施例1相同的耐蚀性试验，但试验后，外观发生了变化。 什么都没有。\n\n  【0086】比较例1：\n\n  【0087】A.S〇2ZNa2制备pH为4.0且pH为12的硅酸钠水溶液。 将该水溶液，有机分散剂（商品名：Solus-S S 20000：Abyssia制造）和平均长轴为20im（粗大尺寸20mx 20mx 1 rn）的鳞片状的锌微粒添加到水中来制备。 混合分散有锌微粒的水性介质，并充分搅拌，以确保作为原料的海藻酸钠硅酸盐和锌微粒的总含量为70％重量（碱式硅酸钠按S i 02计算）。 海藻酸钠，锌细颗粒和有机分散剂作为起始原料的混合比为9.9：90：0.1（重量比：碱式硅酸钠为S i 02 获得（转化）的处理液。\n\n B.用乙醇进行超声波清洗（脱脂处理）并自然干燥15分钟。将与实施例1相同的试验片浸入上述处理液中。 从处理溶液中取出的试验片被放置在离心干燥机中，以300rpm摇动30秒以除去附着在试验片表面上的多余的处理液，然后在空气中于100℃保持5分钟。 暂时干燥了。 将通过暂时干燥如此涂布在表面上的处理液而获得的测试片再次浸入处理液中。 以与上述相同的方式除去从处理液中取出的附着在试验片的表面上的多余的处理液后，将在表面形成有处理液的涂膜的试验片在150℃的空气中暴露30分钟。 在内部进行热处理，以在试验片的表面上形成锌细颗粒含量为90重量％的分散了锌细颗粒的耐腐蚀涂层。 形成的锌细颗粒分散耐腐蚀涂层的厚度为约10m（从横截面观察）。\n\n  【0088】C。在200小时的时间，在表面上产生了分散有锌细颗粒的耐蚀涂层的10个试验片上，在35℃下将5％盐水喷雾500小时进行耐蚀性试验。 有7个外观变化（增加）。\n\n  【0089】示例4：\n\n  【0090】将2 wt％的环氧树脂添加到平均主轴线150 m的合金粉末中，该合金粉末通过淬火合金方法制成，其成分为Nd：12 at％，Fe：77 at％，B：6 at％，Co：5 at％。  ％在686 NZmm2的压力下捏合，捏合，压缩模制，然后在150°C下固化1小时，以生产出外径为3 OmmX内径为28mmX长度为4mm的环形粘结磁体测试件。 使用该实施例进行与实施例1类似的实验，并且在试验片的表面上形成锌细颗粒含量为90重量％的分散了锌细颗粒的耐腐蚀涂层。 所形成的分散有锌细颗粒的耐腐蚀涂层的厚度为约10m（从截面观察）。 另外，使用EPMA（电子束微量分析仪：Shimadzu Corporation制造，EP M810），在表面上具有分散有锌细颗粒的耐腐蚀涂层的试验片的表面附近观察到截面。 图7显示了二次电子图像，图8显示了锌X射线图像，图9显示了铁X射线图像。 从图7至图9发现，锌从试件主体的表面扩散到内部。 没有观察到由于锌扩散而引起的试验片主体的磁性能下降。 耐腐蚀性试验是通过在35℃下在10个具有锌微粒分散耐腐蚀性的试验片上在35℃下喷5％盐水500小时来进行的。\n\n 但是，测试后外观（饮用）没有变化。\n\n  【0091】示例5：\n\n  【0092】向实施例1中制备的水性处理液中加入羟乙基纤维素作为增稠剂，使得其浓度为1重量％，并且将粘度调节为450cP。 在图4所示的涂布夹具上，设置了与实施例1相同的，用乙醇进行超声波清洗（脱脂），干燥15分钟后的大量的试验片，在该涂层上设置了试验片。 如图6所示，将夹具安装在旋转基座的外周边缘上，并且使用如图1所示的上述处理溶液进行浸涂（离心甩干为30O rpm。  30秒）。 之后，从旋转底座上取下带有测试件的涂层夹具，然后将其暂时置于130°C x 10分钟的空气中干燥130分钟，然后将测试件置于涂层夹具上。 将形成有水性处理液的涂膜的试验片在大气中在350℃下热处理30分钟。 接下来，将测试夹具倒置的情况下翻转涂层夹具，然后将其再次安装在旋转基座上，并按照上述相同的步骤进行浸涂，临时干燥和热处理， 在表面上形成锌细颗粒含量为90重量％的分散了锌细颗粒的耐腐蚀涂层。 所形成的分散有锌微粒的耐腐蚀涂层的厚度为10μm/ m（从截面观察）。 在以这种方式生产的表面上具有分散有锌细颗粒的耐腐蚀涂层的10个试验片上进行了与实施例1相同的耐腐蚀性试验，但是在试验之后，出现了外观变化（突起）。 什么都没有。\n\n  【0093】示例6：\n\n  【0094】将羟乙基纤维素作为增稠剂添加至实施例2中制备的水性处理液中，使得其浓度为1重量％，并且将粘度调节至440cP。 使用该处理液，与实施例1同样地在与实施例1相同的试验片的表面上进行乙醇的超声波清洗（脱脂处理）并干燥15分钟。 形成了分散有锌铝微粒的耐腐蚀涂层，该涂料的量为60重量％，铝微粒含量为30重量％。 所形成的分散有锌铝微粒的耐腐蚀涂层的厚度为10m（从截面观察）。 在如此制作的表面上具有分散有锌铝微粒子的耐蚀涂层的试验片的1Q上，进行与实施例1相同的耐腐蚀性试验，但试验后，外观（皱纹）发生变化。\n\n 什么都没有。\n\n  【0095】示例7：\n\n  【0096】将羟乙基纤维素作为增稠剂添加到实施例3中制备的水性处理液中，使得其浓度为1重量％，并且将粘度调节为460cP。 使用该处理液，以与实施例5相同的方式，以与实施例5相同的方式，在与实施例1相同的试验片的表面上，进行乙醇的超声波清洗（脱脂处理）并干燥15分钟。 为55重量％，铝细颗粒的含量为25重量％，锡细颗粒的含量为25重量％。\n\n  【0097】形成10重量％的锌-铝-锡细颗粒分散的耐腐蚀涂层。 所形成的分散有锌铝锡微粒的耐腐蚀涂层的厚度为10m。\n\n  【0098】（从截面观察）。 在以这种方式生产的表面上具有分散有锌铝锡细颗粒的耐蚀涂层的10个试验片上进行了与实施例1相同的耐蚀性试验，但是在试验之后，外观（皱纹）有所变化。 我什么也没做。\n\n  【0099】示例8： \n\n【0100】含有以重量计（S i02）的乙基硅酮作为起始原料的水溶液，该水溶液以与实施例1相同的方式制备，并含有有机分散剂（商品名Sols）  （Perth S 20000：由Abyssia制造）和平均长轴为20 m的鳞片状锌颗粒（近似尺寸为20 m 20 m 1 ^ m）以及平均粒径为3 im和平均粒径为3 m的粒状铝颗粒。 混合分散有锡-铝-锡-氧化铝细颗粒的水基介质，该介质是通过将粒状锡颗粒和平均粒径为1 m的氧化铝细颗粒添加到水中，充分搅拌并用1N氢氧化钠将pH值调节到7来制备的。 作为起始原料的硅酸乙酯，锌细颗粒，铝细颗粒，锡细颗粒和铝细颗粒的总配比为70重量％（硅酸乙酯被转化为S i02）。 硅酸乙酯，锌细颗粒，铝细颗粒，锡细颗粒，氧化铝细颗粒和有机分散剂以9.9：55：25：8：2：0.1的比例混合（重量比：硅酸乙酯为S i 0 获得具有16cP的粘度（转换为2）的水基处理液。 将羟乙基纤维素作为增稠剂添加至该水性处理溶液中，使得浓度为1重量％，并且将粘度调节至465cP。 使用该处理液，与实施例1同样地在与实施例1相同的试验片的表面上进行乙醇的超声波清洗（脱脂处理），干燥15分钟，使其含有锌微粒。\n\n 形成分散有锌-铝-锡-氧化铝细颗粒的耐腐蚀涂层，其含量为55重量％，铝细颗粒含量为25重量％，锡细颗粒含量为8重量％，氧化铝细颗粒含量为2重量％。 做到了。 所形成的分散有锌铝锡氧化铝的微粒的耐腐蚀涂层的厚度为10m（从截面观察）。 对如此制作的表面上分散有锌-铝-锡-氧化铝细颗粒的耐蚀涂层的10个试验片进行与实施例1相同的耐蚀性试验。 没有人来。\n\n  【0101】比较例2：\n\n  【0102】将羟乙基纤维素作为增稠剂添加到比较例1中制备的处理液中，使得其浓度为1重量％，并且将粘度调节为420cP。 使用该处理液，在与实施例1相同的试验片的表面上用乙醇进行超声波清洗（脱脂处理）并干燥15分钟，并且临时干燥条件和热处理条件与比较例1相同。 除了采用上述以外，与实施例5同样地形成锌微粒含量为90重量％的锌微粒分散耐蚀涂层。 所形成的分散有锌微粒的耐腐蚀涂层的厚度为10m（从截面观察）。 当在如此制作的表面上具有分散有锌细颗粒的耐腐蚀涂层的10个试验片上进行与实施例1相同的耐腐蚀性试验时，在200小时时观察到外观变化（皱纹）。 有六个来了。 工业可用性\n\n  【0103】本发明适用于稳定且简单的在表面上具有分散有锌细颗粒的耐蚀涂层的稀土类永磁体的制造方法，以这种方式生产的耐腐蚀稀土类永磁体以及在各种形状的薄工件上形成涂膜的方法。 其可提供浸涂法和快速涂膜形成法，因此具有工业实用性。');
INSERT INTO `os_patent_instruction_text` VALUES (13008, 22837, 'Technical Field\n\n[0001]The present invention relates to an oxidation-resistant rare earth metal based magnet powder useful for producing rare earth metal-based bonded magnet which is not only excellent in oxidation resistance but also superior in magnetic characteristics and to a method for producing the same, to a compound for rare earth metal-based bonded magnet, to a rare earth metal-based bonded magnet and to a method for producing the same.\n\nBackground Art\n\n[0002]Rare earth metal-based bonded magnets are produced by shaping rare earth metal-based magnet powders, for instance, R-Fe-B (where R represents a rare earth element) based magnet powders represented by an Nd-Fe-B based magnet powder, into a predetermined shape using a thermoplastic resin or a thermosetting resin and the like as a binder. These magnets are inferior in magnetic characteristics as compared with rare earth metal-based sintered magnets because a resin binder is incorporated; however, they still possess sufficiently high magnetic characteristics as compared with ferrite magnets, and have outstanding characteristics unavailable in rare earth metal-based sintered magnets, such as the ready availability of magnets with complicated or thin shapes, or radial anisotropic magnets. Thus, rare earth metal-based bonded magnets are extensively used particularly in compact motors such as spindle motors and stepping motors, and recent demands for the rare earth metal-based bonded magnets are increasing.\n\n[0003]Although a rare earth metal-based magnet powder possesses superior magnetic characteristics, it suffers a problem that it is apt to cause corrosion or oxidation due to R or Fe accounting for high ratio in the composition. Accordingly, in producing a rare earth metal-based bonded magnet, a rare earth metal-based magnet powder is mixed with a dissolved or molten (softened) resin binder to prepare a powdery granular starting material comprising the magnet powder whose surface is coated with the resin binder, which is called a \"compound\"; thus, the final product is obtained by shaping the compound into a predetermined shape by subjecting the compound to injection molding, compression molding, or extrusion molding; in case a thermosetting resin is used as the resin binder, the molding is further heated to harden the resin binder to obtain the product in its final shape. However, even in case a rare earth metal-based bonded magnet is made into a product in this manner, a rare earth metal-based magnet powder exposed on the surface of the magnet brings about rust generation, or progressive oxidation in air even at a temperature of about 100 °C, due to corrosion of the magnet powder by the presence of small amount of acid, alkali, or water; and this sometimes leads to, for instance, the deterioration or fluctuation of magnetic characteristics on assembling the magnets as components. Furthermore, epoxy resins and nylon resins that are generally used as the resin binders permeate water and oxygen. Accordingly, in the rare earth metal-based bonded magnets using these resins as the resin binder, it is undeniable that there is possibility of causing corrosion or oxidation attributed to water or oxygen permeated through the resin. Moreover, in view of the fact that the rare earth metal-based magnet powders are apt to be corroded or oxidized, in case injection molding is performed, it is demanded to take the temperature conditions during kneading and shaping into consideration, and, in case compression molding is performed, the curing treatment after molding must be carried out in an inert gas atmosphere or in vacuum.\n\n[0004]Furthermore, a bonded magnet produced by compression molding a compound into a predetermined shape contains pores (voids) on the surface or in the inside of the magnet due to the insufficient filling up of the interstices between the particles of the magnet powder with the resin binder. Thus, the problem is that small amount of acid, alkali, or water may intrude into these pores to cause progressive corrosion from the surface of the magnet, and that this results in rust generation. As a means for solving this problem, there may be thought of increasing the amount of resin binder with respect to the magnet powder blended in the compound; however, in case the blend ratio of the resin binder is increased, it leads to the rise of manufacturing problems due to the impaired fluidity of the compound, or to inferior magnetic characteristics ascribed to the lowered density of magnet powders. Accordingly, an upper limit is set (generally about 3wt%) in the blend ratio of the resin binder with respect to the magnet powder of a compound. Hence, the method above cannot be an effective means of solving the problem.\n\n[0005]In order to overcome the problem above, for example, in JP-A-64-11304, JP-A-7-278602, and the like, is proposed a method of imparting oxidation resistance to a rare earth metal-based magnet powder by forming a coating film made of an inorganic phosphoric acid compound (a coating film containing phosphorus as the component) on the surface of the rare earth metal-based magnet powder. However, when a rare earth metal-based magnet powder having a coating film made of an inorganic phosphoric acid compound formed on the surface thereof is shaped into a predetermined shape to produce a rare earth metal-based bonded magnet, there was found a problem that the magnet suffers considerable aging phenomena in magnetic characteristics due to oxidation. This phenomena is presumed to occur ascribed to the insufficient fluidity of the magnet powder, because breaking of magnet powders occurs due to the molding pressure applied during the shaping of the bonded magnet, thus, for example, the broken surface of the particles, which is apt to be oxidized, becomes exposed to air.\n\n[0006]Further, as is well known in the art, various methods have been proposed for the treatment of the pores that are present in rare earth metal-based bonded magnets. For instance, in JP-A-2001-11504 is proposed a method of sealing the pores that are already present; this method is effective for the treatment of pores that are present on the surface of the magnet, however, there is a problem that this method is still insufficient for treating the pores that are present in the inside of the magnet. Accordingly, for pores generating on the surface and in the inside of a rare earth metal-based bonded magnet, it seems more appropriate to study a means for solving the problem from the viewpoint of manufacturing the bonded magnet without generating pores, and not from the viewpoint of sealing the pores already present in the magnet. For instance, the method of producing a bonded magnet using granulated powder described in JP-A-5-129119 is based on this viewpoint, and the method reduces the generation of pores by promoting densification of the molding during compression molding; this method comprises forming a coating film of a solid resin on the surface of the magnet powder nucleus, and then adhering on the surface a magnet powder finer than the magnet powder nucleus with a coating film of a liquid resin interposed therebetween. This method is worth paying attention, however, a problem had been found that it requires carrying out a process having many steps.\n\n[0007]Further, EP 1 231 599 A1 and EP 1 102 246 A1 both describe a method for producing a magnet powder wherein the surface of the magnet powder particles is covered by an adhesion layer containing a pigment. In both publications, the size of the powder particles is in the range of several nanometers which is comparable to the size of the pigment. In such a case, an interposed layer is required which has the function of a binder to bind the pigment to the powder particles. For example, an organosilica-coating is used as interposed layer.\n\n[0008]Finally JP 63076305 describes a method for producing a plastic magnet wherein a compressed and molded material which contains R-Co based magnet powder and carbon powder is heat-treated in an inert gas atmosphere at 1050°C to 1200°C in order to obtain an adhesion of the carbon powder on the surface of an R-Co based magnet powder. Such a heat treatment can, however, not be applied in the production of an R-Fe-B based magnet powder since the characteristics of the powder would be negatively influenced.\n\n[0009]Accordingly, the objectives of the present invention are to provide an oxidation-resistant rare earth metal-based magnet powder useful for producing rare earth metal-based bonded magnet which is not only excellent in oxidation resistance but also superior in magnetic characteristics and a method for producing the same, a compound for rare earth metal-based bonded magnet, a rare earth metal-based bonded magnet and a method for producing the same.\n\nDisclosure of the Invention\n\n[0010]The oxidation-resistant R-Fe-B based magnet powder according to the present invention is defined in independent claim 1.\n\n[0011]Methods for producing oxidation-resistant R-Fe-B based magnet powders according to the present invention are defined in independent claims 10 and 14.\n\n[0012]The present invention has been accomplished based on the technical background above, and to achieve the above object, according to a first aspect and feature of the present invention, there is provided an oxidation-resistant rare earth metal-based magnet powder which has on its surface an adhesion layer containing a pigment as a primary component, wherein the average particle diameter (major axis diameter) of the pigment is in a range of 0.01 µm to 0.5 µm, and wherein the average particle diameter (major axis diameter) of the magnet powder is in a range o f 100 µm to 200 µm.\n\n[0013]According to a second aspect and feature of the present invention, in addition to the first feature, the pigment is an inorganic pigment.\n\n[0014]According to a third aspect and feature of the present invention, in addition to the second feature, the inorganic pigment is carbon black.\n\n[0015]According to a fourth aspect and feature of the present invention, in addition to the first feature, the pigment is an organic pigment.\n\n[0016]According to a fifth aspect and feature of the present invention, in addition to the fourth feature, the organic pigment is an indanthrene based pigment or a phthalocyanine based pigment.\n\n[0017]According to a sixth aspect and feature of the present invention, in addition to the first feature, the rare earth metal-based magnet powder is an HDDR magnet powder.\n\n[0018]According to a seventh aspect and feature of the present invention, in addition to the first feature, it has the adhesion layer adhered to the outermost surface, with one or more interposed layers of coating films formed on the surface of the rare earth metal-based magnet powder.\n\n[0019]According to an eigth aspect and feature of the present invention, in addition to the seventh feature, the coating film formed on the surface of the rare earth metal-based magnet powder is a coating film made of an inorganic phosphoric acid compound.\n\n[0020]According to an ninth aspect and feature of the present invention, in addition to the seventh feature, the coating film formed on the surface of the rare earth metal-based magnet powder is a coating film made of a metal.\n\n[0021]According to a tenth aspect and feature of the present invention, there is provided a method for producing an oxidation-resistant rare earth metal-based magnet powder having on its surface an adhesion layer containing a pigment as a primary component, wherein the method comprises mixing a rare earth metal-based magnet powder with a treating solution containing the pigment, and then drying the rare earth metal-based magnet powder having adhered to the surface thereof the treating solution containing the pigment.\n\n[0022]According to a thirteenth aspect and feature of the present invention, in addition to the tenth feature, the method comprises mixing a rare earth metal-based magnet powder wherein the average particle diameter (major axis diameter) of the pigment is in a range of 0.01 µm to 0.5 µm, and the average particle diameter (major axis diameter) of the rare earth metal-based magnet powder is in a range of 100 µm to 200 µm.\n\n[0023]According to an eleventh aspect and feature of the present invention, in addition to the tenth feature, the pigment accounts for 5 wt% to 33 wt% of the treating solution containing the pigment. with a treating solution containing the pigment, and then obtaining by filtration the rare earth metal-based magnet powder having adhered to the surface thereof the treating solution containing the pigment.\n\n[0024]According to a thirteenth aspect and feature of the present invention, in addition to the tenth feature, the treating solution containing the pigment comprises an organic dispersing medium.\n\n[0025]According to a fourthteenth aspect and feature of the present invention, there is provided a method for producing an oxidation-resistant rare earth metal-based magnet powder having an adhesion layer containing a pigment as a primary component adhered to the outermost surface with one or more interposed layers of coating films formed on the surface of the rare earth metal-based magnet powder, wherein the method comprises mixing a rare earth metal-based magnet powder having one or more layers of coating films formed on the surface thereof with a treating solution containing the pigment, and then drying the rare earth metal-based magnet powder having adhered to the outermost surface thereof the treating solution containing the pigment wherein the average particle diameter (major axis diameter) of the pigment is in a range of 0.01 µm to 0.5 µm, and the average particle diameter (major axis diameter) of the rare earth metal-based magnet powder is in a range of 100 µm to 200 µm.\n\n[0026]According to a fifteenth aspect and feature of the present invention, in addition to the fourteenth feature, the pigment accounts for 5 wt% to 33 wt% of the treating solution containing the pigment.\n\n[0027]According to a sixteenth aspect and feature of the present invention, there is provided a compound for rare earth metal-based bonded magnet, wherein it comprises an oxidation-resistant rare earth metal-based magnet powder according to the first feature and a resin binder.\n\n[0028]According to a seventeenth aspect and feature of the present invention, there is provided a rare earth metal-based bonded magnet, characterized in that a compound for rare earth metal-based bonded magnet according to the sixteenth feature is used and shaped into a predetermined shape.\n\n[0029]According to an eighteenth aspect and feature of the present invention, there is provided a method for producing a rare earth metal-based bonded magnet, wherein the method comprises using and shaping a compound for rare earth metal-based bonded magnet according to the sixteenth feature into a predetermined shape in a process including at least a compression molding step, followed by heating and hardening the molding if necessary.\n\n[0030]According to a nineteenth aspect and feature of the present invention, in addition to the eighteenth feature, the compression molding is performed by pressing under a pressure of 0.1 GPa to 1 GPa.\n\n[0031]According to the present invention, there are provided an oxidation-resistant rare earth metal-based magnet powder useful for producing rare earth metal-based bonded magnet which is not only excellent in oxidation resistance but also superior in magnetic characteristics and a method for producing the same, a compound for rare earth metal-based bonded magnet, a rare earth metal-based bonded magnet and a method for producing the same.\n\nBrief Description of the Drawings\n\n[0032] FIG. 1 is a graph for EXAMPLE I, showing the results of measuring a magnetic flux deterioration factor (an irreversible demagnetization factor) after the heating test comprising heating at 100 °C for 500 hours in air; FIG. 2 is a graph similar to FIG. 1, except that the heating test comprises heating at 150 °C for 100 hours in air; FIG. 3 is a graph for EXAMPLE I, showing the number of pores present on the surface; FIG. 4 is a graph for EXAMPLE I, showing the relation between a time duration of immersion in water and a weight change ratio; FIG. 5 is a graph for EXAMPLE II, showing the results of measuring a magnetic flux deterioration factor (an irreversible demagnetization factor) after the heating test comprising heating at 100 °C for 500 hours in air; and FIG. 6 is a graph similar to FIG. 5, except that the heating test comprises heating at 150 °C for 100 hours in air. \n\nBest Mode for Carrying Out the Invention\n\n[0033]The oxidation-resistant rare earth metal-based magnet powder according to the present invention can be produced by, for instance, mixing a rare earth metal-based magnet powder with a treating solution containing a pigment, and then drying the rare earth metal-based magnet powder having the treating solution containing the pigment adhered to the surface thereof.\n\n[0034]As the method for preparing the treating solution containing the pigment, there can be mentioned, for example, a method comprising dispersing the pigment in weakly alkaline water whose pH is controlled to a range of 6.5 to 9.0 using ammonia and the like. The pH value of the treating solution is controlled to a range of 6.5 to 9.0 to avoid corrosion of the rare earth metal-based magnet powder due to the treating solution. The viscosity of the treating solution is preferably in a range of 2 cP to 50 cP from the viewpoint of assuring favorable handling properties. Additionally, the treating solution containing the pigment may be the one comprising the pigment dispersed in an organic solvent such as ethanol, isopropanol, and the like.\n\n[0035]As the pigment, there may be used both types of pigments, i.e., organic pigments and inorganic pigments. As organic pigments, there can be mentioned, in addition to indanthrene based pigments and phthalocyanine based pigments, azo based, quinacridone based, anthraquinone based, dioxazine based, indigo based, thioindigo based, perinone based, perylene based, isoindoline based, azo methine azo based, and diketopyrrolopyrrole based, and the like. In case an organic pigment is used as the pigment, the rare earth metal-based magnet powder having on its surface the adhesion layer containing an organic pigment as a primary component imparts appropriate viscoelasticity and excellent fluidity to the compound for rare earth metal-based bonded magnet containing the resin binder, and, at the same time, the organic pigment constituting the adhesion layer absorbs and relaxes the stress that is applied to the compound during compression molding; hence, this is preferred from the viewpoint of preventing the generation of new broken surfaces due to the breaking down of magnet powder. Furthermore, some types of organic pigments are expected to impart high resistivity to the bonded magnets. In particular, since indanthrene based pigments and phthalocyanine based pigments have excellent corrosion resistance and heat resistance, these can be said as the preferred organic pigments.\n\n[0036]As inorganic pigments, there can be mentioned carbon black, titanium dioxide, iron oxide, chromium oxide, zinc oxide, alumina, zinc sulfide, talc, mica, calcium carbonate, and the like. In case an inorganic pigment is used as the pigment, the rare earth metal-based magnet powder having on its surface the adhesion layer containing an inorganic pigment as a primary component is preferred for imparting particularly superior oxidation resistance to the magnet powder because the adhesion layer has excellent impermeability to oxygen and water vapor. Carbon black can be mentioned as the preferred inorganic pigment.\n\n[0037]From the viewpoint of assuring uniform dispersibility of the pigment in the treating solution containing the pigment, the average particle diameter (major axis diameter) of the pigment is, preferably, in a range of 0.01 µm to 0.5 µm. If the average particle diameter sould be smaller than 0.01 µm, not only its production becomes difficult, but also it tends to agglomerate in the treating solution as to impair the handling properties. If the average particle diameter should exceed 0.5 µm, the specific gravity in the treating solution becomes too large as to cause sedimentation.\n\n[0038]The content of the pigment in the treating solution is preferably in a range of 5 wt% to 33 wt%. If the content should be lower than 5 wt%, the adhesion layer containing sufficiently high amount of pigment cannot be formed on the surface of the rare earth metal-based magnet powder, thus, it is feared that this results in a failure of imparting excellent oxidation resistance to the magnet powder. If the content should exceed 33 wt%, the pigment may undergo agglomeration or sedimentation in the treating solution to thereby result in poor dispersibility. Thus, the content of the pigment in the treating solution is, more preferably, in a range of 10 wt% to 30 wt%.\n\n[0039]It is preferred to add an organic dispersing medium in the treating solution containing the pigment. The organic dispersing medium is used with an objective of suppressing the agglomeration or sedimentation of the pigment in the treating solution. From the viewpoint of achieving the objective above, as well as from the viewpoint of affinity with the pigment and cost, the organic dispersing media favorably used are an anionic dispersing medium (for example, an aliphatic polycarboxylic acid, a salt of polyether polyester carboxylic acid, a salt of high molecular polyester acid polyamine, a salt of high molecular polycarboxylic acid long chain amine, and the like), a nonionic dispersing medium (for example, a carboxylic acid salt, a sulfonic acid salt, or an ammonium salt of polyoxyethylene alkyl ether or sorbitan ester, and the like), a high molecular dispersing medium (for example, a carboxylic acid salt, a sulfonic acid salt, or an ammonium salt of water-soluble epoxy; a styrene-acrylic acid copolymer, a glue, and the like).\n\n[0040]The amount of addition of the organic dispersing medium into the treating solution is preferably in a range of 9 wt% to 24 wt%. If the amount of addition should be lower than 9 wt%, the dispersibility of the pigment may be lowered. On the other hand, if the amount of addition should exceed 24 wt%, the viscosity of the treating solution may become too high as to impair the handling properties.\n\n[0041]The oxidation-resistant rare earth metal-based magnet powder may be produced by, for instance, immersing a rare earth metal-based magnet powder in a treating solution containing the pigment prepared in the aforementioned manner, mixing and stirring, and after filtering out the rare earth metal-based magnet powder having adhered to the surface thereof the treating solution containing the pigment, drying the resulting product. The total time for immersing the rare earth metal-based magnet powder in the treating solution containing the pigment, followed by mixing and stirring, is generally 1 to 20 minutes although it depends on the amount of the rare earth metal-based magnet powder. By using reduced pressure filtration or pressurized filtration in case of filtering out the rare earth metal-based magnet powder having adhered to the surface thereof the treating solution containing the pigment, the pigment can be more tightly adsorbed onto the surface of the magnet powder. In order to impart oxidation resistance to the rare earth metal-based magnet powder without causing deterioration of the magnetic characteristics, drying is preferably carried out by natural drying or in an inert gas (such as nitrogen gas, argon gas, and the like) atmosphere, or by heat drying at 80 °C to 120 °C in vacuum. In case of employing heat drying, the drying time is generally 20 minutes to 2 hours although it depends on the amount of the rare earth metal-based magnet powder. In case the thus filtered out rare earth metal-based magnet powder having adhered to the surface thereof the treating solution containing the pigment appears as an agglomerate, it is preferred to dry after disintegrating the agglomerate. Otherwise, the rare earth metal-based magnet powder having adhered to the surface thereof the treating solution containing the pigment may be obtained by spraying the treating solution containing the pigment to the rare earth metal-based magnet powder.\n\n[0042]The adhesion layer containing a pigment as a primary component that is formed on the surface of the rare earth metal-based magnet powder obtained in such a manner described above imparts excellent oxidation resistance to the magnet powder, however, this adhesion layer is formed, not by a chemical reaction in which the magnet powder component is incorporated, but by the intermolecular force adsorption of fine pigment particles in the size of nanometers on the surface of the magnet powder. Accordingly, there are no problems during its formation as such that the vicinity of the surface of the magnet powder changes in quality as to deteriorate the magnetic characteristics. Thus, by using the oxidation-resistant rare earth metal-based magnet powder according to the present invention, there can be produced a rare earth metal-based bonded magnet which is not only excellent in oxidation resistance but also superior in magnetic characteristics.\n\n[0043]Furthermore, the rare earth metal-based bonded magnets produced by using the oxidation-resistant rare earth metal-based magnet powder according to the present invention is superior in oxidation resistance in that not only the magnet powder has excellent oxidation resistance. In general, in shaping a bonded magnet, breaking of magnet powders occurs due to the molding pressure applied during the shaping of the bonded magnet because of insufficient fluidity of the magnet powder; accordingly, there are cases, for example, in which the magnet powder undergoes breakage as to generate the broken surfaces of the particles that are easily oxidized. However, in the case the oxidation-resistant rare earth metal-based magnet powder of the present invention is used, it is presumed that the pigment particles constituting the adhesion layer formed on the surface of the magnet powder exhibits a lubricating function to ameliorate the fluidity of the magnet powder during the shaping of the bonded magnet, and that the generation of broken surfaces of the particles due to the magnet powder broken by applied molding pressure, which are apt to be oxidized, is suppressed.\n\n[0044]Furthermore, for shaping the rare earth metal-based bonded magnets, in case of employing a compression molding method or a molding method comprising a combination of compression molding and rolling (for instance, see \"F. Yamashita, Applications of Rare-Earth Magnets to the Small motor industry, pp. 100-111, Proceedings of the seventeenth international workshop, Rare Earth Magnets and Their Applications, August 18-22, 2002, Newark, Delaware, USA, Edited by G. C. Hadjipanayis and M. J. Bonder, Rinton Press\"), and the like, in general, numerous pores generate on the surface of the produced bonded magnets. However, in the rare earth metal-based bonded magnets produced by using the oxidation-resistant rare earth metal-based magnet powder of the present invention, the pigment particles constituting the adhesion layer formed on the surface of the magnet powder exhibit a pore-sealing effect. It also is believed that the usage of the oxidation-resistant rare earth metal-based magnet powder of the present invention contributes to the realization of the rare earth metal-based bonded magnets with excellent oxidation resistance.\n\n[0045]Since the present invention does not make the vicinity of the surface of the magnet powder change in quality even for a rare earth metal-based magnet powder having smaller average particle diameter (major axis diameter) (for instance, 200 µm or smaller), for instance, a magnetically anisotropic HDDR (Hydrogenation-Disproportionation-Desorption-Recombination ) magnet powder (see JP-B-6-82575) having an average particle diameter of about 80 µm to 100 µm, which is produced by heating a rare earth metal-based magnet alloy in hydrogen for hydrogen absorption, followed by hydrogen desorption treatment, and cooling thereafter, an excellent oxidation resistance can be imparted thereto without causing deterioration of magnetic characteristics. Further, the rare earth metal-based magnet powder may be such subjected to a pretreatment by a method known in the art, such as pickling, degreasing, rinsing, and the like.\n\n[0046]Furthermore, the oxidation-resistant rare earth metal-based magnet powder according to the present invention may be such having the adhesion layer containing a pigment as a primary component, which is adhered to the outermost surface, with one or more interposed layers of coating films formed on the surface of the rare earth metal-based magnet powder. Such an oxidation-resistant rare earth metal-based magnet powder can be produced, for instance, by mixing a rare earth metal-based magnet powder having one or more layers of coating films formed on the surface thereof with a treating solution containing a pigment, and then drying the rare earth metal-based magnet powder having adhered to the outermost surface thereof the treating solution containing the pigment. As rare earth metal-based magnet powders having one or more layers of coating films formed on the surface thereof, there can be mentioned, for instance, a rare earth metal-based magnet powder having a coating film made of an inorganic phosphoric acid compound as an oxidation resistant coating film formed on the surface thereof, as described in JP-A-64-11304 and JP-A-7-278602. However, the coating film that is formed on the surface of the rare earth metal-based magnet powders is not limited to that made of an inorganic phosphoric acid compound, but may be any oxidation resistant coating film well known in the art, for instance, a coating film made of a metal such as aluminum coating film and zinc coating film; or a resin coating film such as polyimide coating film; or a laminated film consisting of a plurality of coating films. Thus, even in case a coating film with an insufficient oxidation resistance is formed as a lower layer on the surface of the rare earth metal-based magnet powder, the adhesion layer containing the pigment as a primary component formed on the outermost surface of the rare earth metal-based magnet powder effectively compensates or reinforces the oxidation resistance.\n\n[0047]A compound for rare earth metal-based bonded magnet can be produced by a method well known in the art from the oxidation-resistant rare earth metal-based magnet powder according to the present invention mixed with a resin binder. As resin binders, usable are thermosetting resins such as epoxy resin, phenolic resin, melamine resin, and the like; thermoplastic resins such as polyamides (nylon 66, nylon 6, nylon 12, and the like), polyethylene, polypropylene, polyvinyl chloride, polyester, polyphenylene sulfide, and the like; rubbers and estramers; modified products, copolymers, and mixtures thereof (for instance, those comprising a powder of a thermoplastic resin dispersed in a thermosetting resin (epoxy resin and the like): see \"F. Yamashita, Applications of Rare-Earth Magnets to the Small motor industry, pp. 100-111, Proceedings of the seventeenth international workshop, Rare Earth Magnets and Their Applications, August 18-22, 2002, Newark, Delaware, USA, Edited by G. C. Hadjipanayis and M. J. Bonder, Rinton Press\"). The resin binder is preferably blended in the compound at an amount of 3 wt% or less with respect to the oxidation-resistant rare earth metal-based magnet powder. In obtaining a compound, an additive such as a coupling agent, a lubricant, a hardener, and the like may be added at an amount generally used in the art.\n\n[0048]The rare earth metal-based bonded magnet using the oxidation-resistant rare earth metal-based magnet powder according to the present invention is produced by shaping the compound for rare earth metal-based bonded magnet prepared in the aforementioned manner into a predetermined shape by compression molding, injection molding, extrusion molding, and the like. For instance, in case of employing a compression molding method, those include, in addition to the compression molding method generally used in the art, a molding method comprising a combination of compression molding and rolling (for example, see above: \"F. Yamashita, Applications of Rare-Earth Magnets to th', '技术领域 \n\n [0001] 耐氧化的稀土金属基磁体粉末及其制造方法技术领域本发明涉及一种不仅可用于制造具有优异的抗氧化性而且具有优异的磁特性的,用于制备稀土金属基粘结磁体的抗氧化的稀土金属基磁体及其制造方法, 用于稀土金属基粘结磁体的化合物,稀土金属基粘结磁体及其制造方法。 \n\n 背景技术 \n\n [0002] 稀土金属基粘结磁体是通过将稀土金属基磁体粉末成型而生产的,例如,以Nd-Fe-B基磁体粉末为代表的R-Fe-B(其中R表示稀土元素)基磁体粉末 使用热塑性树脂或热固性树脂等作为粘合剂,制成预定形状。 这些磁体与稀土金属基烧结磁体相比,其磁特性较差,这是因为掺入了树脂粘合剂。 但是,与铁氧体磁体相比,它们仍具有足够高的磁特性,并且具有稀土金属基烧结磁体所不具备的出色特性,例如易于获得的具有复杂或薄形状的磁体或径向各向异性磁体。 因此,稀土金属基粘结磁体尤其在诸如主轴电动机和步进电动机的紧凑型电动机中被广泛使用,并且最近对稀土金属基粘结磁体的需求正在增加。 \n\n [0003] 尽管基于稀土金属的磁体粉末具有优异的磁特性,但是由于存在占组成高比例的R或Fe,它具有易于引起腐蚀或氧化的问题。 因此,在制备稀土金属基粘结磁体时,将稀土金属基磁体粉末与溶解或熔融(软化)的树脂粘合剂混合,以制备包含其表面被表面涂层的磁体粉末的粉末状颗粒原料。 树脂粘合剂,称为“化合物”; 因此,通过对该化合物进行注射成型,压缩成型或挤出成型而将其成型为预定形状,从而获得最终产品。 在使用热固性树脂作为树脂粘合剂的情况下,进一步加热模制品以使树脂粘合剂硬化以获得最终形状的产品。 然而,即使以这种方式将稀土金属基粘结磁体制成产品,暴露在磁体表面上的稀土金属基磁体粉末也会导致生锈,甚至在空气中会逐渐氧化。 由于少量的酸,碱或水对磁铁粉末的腐蚀,温度约为100°C; 并且这有时导致例如在将磁体组装为部件时磁性特性的劣化或波动。 此外,通常用作树脂粘合剂的环氧树脂和尼龙树脂会渗透水和氧气。 因此,在使用这些树脂作为树脂粘合剂的稀土类金属粘结磁铁中,不可否认的是,有可能由于渗透到树脂中的水或氧而引起腐蚀或氧化。 此外,鉴于稀土金属基磁体粉末易于被腐蚀或氧化的事实,在进行注射成型的情况下,需要考虑到捏合和成形期间的温度条件,并且 进行压缩成型时,成型后的固化处理必须在惰性气体气氛或真空中进行。 \n\n [0004] 此外,通过将化合物压缩成型为预定形状而制造的粘结磁体由于磁体粉末的颗粒之间的空隙不足以用树脂粘合剂填充而在磁体的表面或内部包含孔(空隙)。  。 因此,问题在于少量的酸,碱或水可能侵入这些孔中以引起从磁体表面的逐渐腐蚀,并且这导致生锈。 作为解决该问题的手段,可以考虑相对于配合在混合物中的磁铁粉末增加树脂粘合剂的量。 但是,如果增加树脂粘合剂的混合比,则由于化合物的流动性降低而导致制造问题的增加,或者由于磁铁粉末的密度降低而导致的磁特性变差。 因此,设定树脂粘合剂相对于化合物的磁铁粉末的混合比例的上限(通常为约3重量%)。 因此,上述方法不能成为解决问题的有效手段。 \n\n [0005] 为了克服上述问题,例如,在JP-A-64-11304,JP-A-7-278602等中,提出了一种通过如下方法赋予稀土类金属磁体粉末抗氧化性的方法: 在稀土金属类磁铁粉末的表面上形成由无机磷酸化合物构成的涂膜(含有磷作为成分的涂膜)。 但是,将表面形成有由无机磷酸化合物形成的涂膜的稀土金属类磁铁粉末成形为规定的形状而制作稀土金属类粘结磁铁时,发现了以下问题。 磁铁由于氧化而在磁特性方面遭受相当大的老化现象。 推测该现象归因于磁铁粉末的流动性不足,因为磁铁粉末的破裂是由于在粘结磁体的成形过程中施加的成型压力而产生的,因此例如是颗粒的破裂表面。 容易被氧化,暴露在空气中。 \n\n [0006] 此外,如本领域中众所周知的,已经提出了各种方法来处理存在于稀土金属基粘结磁体中的孔。 例如,在JP-A-2001-11504中提出了一种密封已经存在的孔的方法。 该方法对于处理磁体表面上存在的孔是有效的,然而,存在的问题是该方法仍不足以处理磁体内部存在的孔。 因此,对于在稀土金属类粘结磁铁的表面和内部产生的气孔,从制造不产生气孔的粘结磁铁的观点出发,而不是从制造方法的观点出发,研究解决该问题的手段似乎更为合适。 密封已经存在于磁体中的孔的观点。 例如,在JP-A-5-129119中描述的使用粒状粉末生产粘结磁体的方法是基于该观点,并且该方法通过在压缩成型期间促进成型的致密化来减少气孔的产生。 该方法包括在磁体粉末核的表面上形成固体树脂的涂膜,然后将比磁体粉末核细的磁体粉末粘附在该表面上,并在其间插入液态树脂的涂膜。 该方法值得关注,但是,发现了一个问题,它要求执行具有许多步骤的过程。 \n\n [0007] 此外,EP 1 231 599 A1和EP 1 102 246 A1均描述了一种制造磁体粉末的方法,其中磁体粉末颗粒的表面被包含颜料的粘附层覆盖。 在两个出版物中,粉末颗粒的尺寸都在几纳米的范围内,与颜料的尺寸相当。 在这种情况下,需要插入层,该插入层具有粘合剂的作用以将颜料粘合到粉末颗粒上。 例如,有机二氧化硅涂层被用作插入层。 \n\n [0008] 最后,JP 63076305描述了一种制造塑料磁体的方法,其中将包含R-Co基磁体粉末和碳粉的压缩成型材料在惰性气体气氛中于1050°C至1200°C进行热处理 碳粉在R-Co基磁铁粉表面上的附着力。 但是,这种热处理不能应用于R-Fe-B基磁体粉末的生产中,因为会不利地影响粉末的特性。 \n\n [0009] 因此,本发明的目的是提供一种可用于生产不仅具有优异的抗氧化性而且具有优异的磁性能的用于制造稀土金属基粘结磁体的抗氧化稀土金属基磁体粉末及其制备方法。 稀土金属系粘结磁铁用化合物,稀土金属系粘结磁铁及其制造方法。 \n\n 发明内容 \n\n [0010] 根据本发明的抗氧化的R-Fe-B基磁铁粉末在独立权利要求1中定义。 \n\n [0011] 在独立权利要求10和14中定义了根据本发明的生产抗氧化的R-Fe-B基磁体粉末的方法。 \n\n [0012] 基于上述技术背景完成了本发明,并且为了实现上述目的,根据本发明的第一方面和特征,提供了一种抗氧化稀土金属基磁体粉末,其具有 在含有颜料作为主要成分的粘合层的表面上,颜料的平均粒径(长径)在0.01μm〜0.5μm的范围内,磁铁的平均粒径(长径) 粉末的范围是100 µm至200 µm。 \n\n [0013] 根据本发明的第二方面和特征,除了第一特征之外,所述颜料是无机颜料。 \n\n [0014] 根据本发明的第三方面和特征,除了第二特征之外,无机颜料是炭黑。 \n\n [0015] 根据本发明的第四方面和特征,除了第一特征之外,所述颜料是有机颜料。 \n\n [0016] 根据本发明的第五方面和特征,除了第四特征之外,有机颜料是阴丹士林类颜料或酞菁类颜料。 \n\n [0017] 根据本发明的第六方面和特征,除了第一特征之外,稀土金属基磁体粉末是HDDR磁体粉末。 \n\n [0018] 根据本发明的第七方面和特征,除了第一特征之外,它还具有粘附层,该粘附层粘附至最外表面,并且在基于稀土金属的表面上形成一层或多层插入的涂膜层。 磁铁粉。 \n\n [0019] 根据本发明的第八方面和特征,除第七特征外,形成在稀土金属基磁体粉末的表面上的涂膜是由无机磷酸化合物制成的涂膜。 \n\n [0020] 根据本发明的第九方面和特征,除第七特征外,形成在稀土金属基磁体粉末的表面上的涂膜是由金属制成的涂膜。 \n\n [0021] 根据本发明的第十方面和特征,提供了一种生产抗氧化稀土金属基磁体粉末的方法,该表面在其表面上具有包含颜料作为主要成分的粘附层,其中该方法包括混合 稀土金属基磁铁粉末与含有颜料的处理溶液,然后干燥已将粘附有颜料的处理溶液附着在其表面上的稀土金属基磁铁粉末。 \n\n [0022] 根据本发明的第十三个方面和特征,除第十个特征外,该方法包括混合稀土金属基磁体粉末,其中颜料的平均粒径(长径)在0.01的范围内。  μm〜0.5μm,稀土金属类磁铁粉末的平均粒径(长径)为100μm〜200μm。 \n\n [0023] 根据本发明的第十一方面和特征,除了第十特征之外,颜料占包含颜料的处理溶液的5wt%至33wt%。 用含有颜料的处理溶液,然后通过过滤获得粘附在其表面上的含有颜料的处理溶液的稀土金属基磁体粉末。 \n\n [0024] 根据本发明的第十三方面和特征,除了第十特征之外,含有颜料的处理溶液还包含有机分散介质。 \n\n [0025] 根据本发明的第十四方面和特征,提供了一种生产抗氧化稀土金属基磁体粉末的方法,所述抗氧化稀土金属基磁体粉末具有以一种或多种方式粘附至最外表面的,包含颜料作为主要成分的粘附层。 在形成于稀土金属基磁体粉末的表面上的涂膜的中间层之间,其中该方法包括将在表面上形成有一层或多层涂膜的稀土金属基磁体粉末与含有 颜料,然后干燥已经粘附到其最外表面的稀土金属基磁体粉末的处理溶液,其中该颜料的处理溶液的颜料的平均粒径(长径)在0.01 µm至0.5 µm的范围内 ,稀土金属类磁铁粉末的平均粒径(长径)为100μm〜200μm。 \n\n [0026] 根据本发明的第十五方面和特征,除了第十四特征之外,颜料占包含颜料的处理溶液的5wt%至33wt%。 \n\n [0027] 根据本发明的第十六方面和特征,提供了一种用于稀土金属基粘结磁体的化合物,其中其包含根据第一特征的抗氧化稀土金属基磁体粉末和树脂粘合剂。 \n\n [0028] 根据本发明的第十七方面和特征,提供了一种稀土金属基粘结磁体,其特征在于,使用根据第十六特征的用于稀土金属基粘结磁体的化合物并将其成形为预定形状。  。 \n\n [0029] 根据本发明的第十八方面和特征,提供了一种用于生产稀土金属基粘结磁体的方法,其中该方法包括根据第十六特征使用和成形用于稀土金属基粘结磁体的化合物。 在至少包括压缩成型步骤的过程中将其成型为预定形状,然后根据需要加热和硬化成型件。 \n\n [0030] 根据本发明的第十九方面和特征,除了第十八特征之外,通过在0.1GPa至1GPa的压力下压制来执行压缩成型。 \n\n [0031] 根据本发明,提供了不仅耐氧化性优异而且磁特性优异的,可用于制造稀土金属系粘结磁铁的耐氧化性稀土金属系磁铁粉末及其制造方法。 稀土金属系粘结磁铁用化合物,稀土金属系粘结磁铁及其制造方法。 \n\n 附图的简要说明 \n\n [0032] 图。  1个  图7是实施例I的曲线图,其显示了在包括在空气中在100℃下加热500小时的加热试验之后的磁通劣化因子(不可逆退磁因子)的测量结果。  图。  2  是类似于 图。  1个 ,除了加热测试包括在150°C的空气中加热100小时外;  图。  3 图7是实施例I的图,显示了表面上存在的孔的数量。  图。  4  图7是实施例I的曲线图,表示浸入水中的时间与重量变化率之间的关系。  图。  5  图7是实施例II的曲线图,其示出了在包括在空气中在100℃下加热500小时的加热测试之后的磁通劣化因子(不可逆退磁因子)的测量结果。 和  图。  6  是类似于  图。  5 ,除了加热测试包括在150°C的空气中加热100小时。 \n\n 实施发明的最佳方式 \n\n [0033] 根据本发明的抗氧化稀土金属基磁体粉末可以通过例如将稀土金​​属基磁体粉末与包含颜料的处理溶液混合,然后干燥稀土金属基磁体来制备。 具有含有颜料的处理溶液粘附在其表面上的磁铁粉末。 \n\n [0034] 作为制备包含颜料的处理溶液的方法,例如,可以提及包括将颜料分散在使用氨等将pH控制在6.5至9.0的弱碱性水中的方法。 将处理溶液的pH值控制在6.5至9.0的范围内,以避免由于处理溶液对稀土金属基磁体粉末的腐蚀。 从确保良好的操作性的观点出发,处理液的粘度优选在2cP〜50cP的范围内。 另外,包含颜料的处理溶液可以是包含分散在诸如乙醇,异丙醇等的有机溶剂中的颜料的处理溶液。 \n\n [0035] 作为颜料,可以使用两种类型的颜料,即有机颜料和无机颜料。 作为有机颜料,除了阴丹士林类颜料和酞菁类颜料之外,还可以提及偶氮类,喹ac啶酮类,蒽醌类,二恶嗪类,靛蓝类,硫靛类,Perinone类,per类,异吲哚啉类,偶氮次甲基偶氮类。 和基于二酮吡咯并吡咯等。 在使用有机颜料作为颜料的情况下,其表面具有包含有机颜料作为主要成分的粘附层的稀土金属基磁体粉末赋予用于稀土金属基粘结的化合物适当的粘弹性和优异的流动性。 含有树脂粘合剂的磁铁,同时,构成粘合层的有机颜料吸收并缓和了压缩成型过程中施加在化合物上的应力。 因此,从防止由于磁铁粉末的分解而产生新的破损面的观点出发,这是优选的。 此外,期望某些类型的有机颜料赋予粘结磁体高电阻率。 特别地,由于阴丹士林类颜料和酞菁类颜料具有优异的耐腐蚀性和耐热性,因此可以说它们是优选的有机颜料。 \n\n [0036] 作为无机颜料,可以提及炭黑,二氧化钛,氧化铁,氧化铬,氧化锌,氧化铝,硫化锌,滑石粉,云母,碳酸钙等。 在使用无机颜料作为颜料的情况下,优选的是,在其表面上具有包含无机颜料作为主要成分的粘合层的稀土金属类磁体粉末,因为该粘合层赋予了特别优异的抗氧化性。 对氧气和水蒸气具有极好的不渗透性。 可以提及炭黑作为优选的无机颜料。 \n\n [0037] 从确保颜料在含有该颜料的处理溶液中的均匀分散性的观点出发,颜料的平均粒径(长径)优选在0.01μm〜0.5μm的范围内。 如果平均粒径小于0.01μm,则不仅难以制造,而且容易在处理液中凝集,有损于操作性。 如果平均粒径超过0.5μm,则处理液中的比重过大而导致沉降。 \n\n [0038] 处理溶液中颜料的含量优选在5重量%至33重量%的范围内。 如果该含量低于5重量%,则在稀土金属类磁铁粉末的表面上不能形成含有足够多的颜料的粘合层,因此担心不能赋予优异的粘合性。 对磁铁粉末的抗氧化性。 如果含量应超过33wt%,则颜料可能在处理溶液中发生附聚或沉淀,从而导致差的分散性。 因此,处理溶液中颜料的含量更优选在10重量%至30重量%的范围内。 \n\n [0039] 优选在含有颜料的处理液中添加有机分散介质。 使用有机分散介质的目的是抑制处理溶液中颜料的团聚或沉淀。 从实现上述目的的观点以及与颜料的亲和性和成本的观点出发,优选使用的有机分散介质为阴离子分散介质(例如,脂肪族多元羧酸,聚醚聚酯羧酸的盐)。  ,高分子聚酯酸多元胺的盐,高分子多元羧酸长链胺的盐等),非离子分散介质(例如,聚氧乙烯的羧酸盐,磺酸盐或铵盐) 烷基醚或脱水山梨醇酯等),高分子分散介质(例如水溶性环氧的羧酸盐,磺酸盐或铵盐),苯乙烯-丙烯酸共聚物,胶粘剂, 等)。 \n\n [0040] 有机分散介质向处理溶液中的添加量优选在9重量%至24重量%的范围内。 如果添加量应小于9重量%,则颜料的分散性可能降低。 另一方面,如果添加量应超过24wt%,则处理溶液的粘度可能变得太高以至于损害了处理性能。 \n\n [0041] 可以通过例如将稀土金​​属基磁体粉末浸入含有以上述方式制备的颜料的处理溶液中,混合并搅拌,并过滤掉其中的抗氧化稀土金属基磁体粉末。 稀土金属类磁铁粉末的表面附着有含有颜料的处理液,干燥所得的产物。 将稀土金属基磁体粉末浸入含有颜料的处理溶液中,然后混合和搅拌的总时间通常为1至20分钟,尽管这取决于稀土金属基磁体粉末的量。 在滤出附着在其表面上的含有颜料的稀土金属类磁铁粉末的情况下,通过减压过滤或加压过滤,可以使颜料更紧密地吸附在磁铁粉末的表面上。 为了在不引起磁特性的劣化的情况下赋予稀土类金属磁体粉末抗氧化性,优选通过自然干燥或在惰性气体(氮气,氩气等)中进行干燥。  ,或在80°C至120°C的真空中加热干燥。 在采用加热干燥的情况下,干燥时间通常取决于稀土金属基磁体粉末的量,通常为20分钟至2小时。 如果这样过滤出的稀土金属基磁铁粉末粘附在其表面上,则含有颜料的处理溶液呈现团块状,优选在使团块崩解后干燥。 否则,可以通过将包含颜料的处理溶液喷涂到稀土金属基磁体粉末上来获得在其表面上粘附有包含颜料的处理溶液的稀土金属基磁体粉末。 \n\n [0042] 以上述方式获得的在稀土金属基磁体粉末的表面上形成的包含颜料作为主要成分的粘附层赋予磁体粉末优异的抗氧化性,但是,形成该粘附层而不是 通过其中掺入了磁体粉末组分的化学反应,但是通过分子间力将纳米尺寸的颜料细颗粒吸附在磁体粉末的表面上。 因此,在其形成期间不存在问题,使得磁体粉末的表面附近的质量改变而不会恶化磁特性。 因此,通过使用根据本发明的抗氧化稀土金属基磁体粉末,可以生产不仅抗氧化性优异而且磁特性优异的稀土金属基粘结磁体。 \n\n [0043] 此外,通过使用根据本发明的抗氧化稀土金属基磁体粉末制备的稀土金属基粘结磁体在抗氧化性方面优异,因为不仅该磁体粉末具有优异的抗氧化性。 通常,在使粘结磁铁成形时,由于磁铁粉末的流动性不足,在粘结磁铁成形时施加的成形压力会导致磁铁粉末的破裂。 因此,例如在某些情况下,磁铁粉末会破裂而产生易于氧化的颗粒破裂表面。 然而,在使用本发明的抗氧化稀土金属基磁铁粉末的情况下,推测构成在磁铁粉末表面上形成的粘附层的颜料颗粒表现出润滑作用以改善流动性。 在粘结磁体的成形过程中,抑制了磁体粉末的表面破裂,并且抑制了由于磁体粉末由于施加的成型压力而破裂而易于氧化的颗粒破裂表面的产生。 \n\n [0044] 此外,为了成形稀土金属基粘结磁体,在采用压缩成型方法或包括压缩成型和轧制的组合的成型方法的情况下(例如,参见“ F. Yamashita,稀土磁体的应用 小型电动机行业,第100-111页,第17届国际研讨会论文集,《稀土磁体及其应用》,2002年8月18日至22日,美国特拉华州纽瓦克,GC Hadjipanayis和MJ Bonder编辑,Rinton出版社”) 通常,在所产生的粘结磁体的表面上产生许多孔。 然而,在通过使用本发明的抗氧化稀土金属基磁体粉末制备的稀土金属基粘结磁体中,构成在磁体粉末表面上形成的粘附层的颜料颗粒表现出孔密封性。 影响。 还可以相信,本发明的抗氧化稀土金属基磁铁粉末的使用有助于实现具有优异抗氧化性的稀土金属基粘结磁铁。 \n\n [0045] 由于即使对于具有较小平均粒径(长轴直径)(例如200μm以下)的稀土金属类磁体粉末,本发明也不会使磁体粉末表面附近的质量发生变化。 例如,通过加热稀土金属制得的平均粒径约80 µm至100 µm的磁各向异性HDDR(加氢-歧化-解吸-重组)磁体粉末(请参阅JP-B-6-82575)。 在用于吸氢的氢中的铁基磁体合金中,随后进行氢脱附处理,然后冷却,可以赋予其优异的抗氧化性而不会引起磁特性的劣化。 另外,可以通过酸洗,脱脂,漂洗等本领域公知的方法对稀土类磁铁粉末进行预处理。 \n\n [0046] 此外,根据本发明的抗氧化稀土金属基磁体粉末可以是这样的:具有包含颜料作为主要成分的粘附层,该粘附层粘附至最外表面,并且具有一层或多层插入的涂膜。 形成在稀土金属基磁体粉末的表面上。 这种抗氧化的稀土金属基磁体粉末可以例如通过将在其表面上形成有一层或多层涂膜的稀土金属基磁体粉末与包含颜料的处理溶液混合来制备, 然后干燥已经粘附到其最外表面的包含颜料的处理溶液的稀土金属基磁体粉末。 作为在其表面上形成有一层或多层涂膜的稀土金属基磁体粉末,可以提及例如具有由无机磷酸化合物制成的涂膜的稀土金属基磁体粉末。 如在JP-A-64-11304和JP-A-7-278602中所述,在其表面上形成抗氧化涂膜。 然而,形成在稀土金属基磁体粉末的表面上的涂膜不限于由无机磷酸化合物制成的涂膜,而可以是本领域公知的任何抗氧化涂膜,例如, 由金属制成的涂膜,例如铝涂膜和锌涂膜; 或诸如聚酰亚胺涂膜的树脂涂膜; 或者由多个涂膜组成的层压膜。 因此,即使在稀土金属类磁铁粉末的表面上形成抗氧化性不足的涂膜作为下层的情况下,在稀有金属的最外表面上也形成以颜料为主要成分的粘接层。 稀土金属基磁体粉末可有效补偿或增强抗氧化性。 \n\n [0047] 稀土金属系粘结磁体用化合物可以通过本领域中公知的方法,由将本发明的耐氧化性稀土金属系磁体粉末与树脂粘合剂混合而成的。 作为树脂粘合剂,可以使用热固性树脂,例如环氧树脂,酚醛树脂,三聚氰胺树脂等。 热塑性树脂,例如聚酰胺(尼龙66,尼龙6,尼龙12等),聚乙烯,聚丙烯,聚氯乙烯,聚酯,聚苯硫醚等; 橡胶和雌蕊; 改性产品,共聚物及其混合物(例如,包含分散在热固性树脂(环氧树脂等)中的热塑性树脂粉末的产品:请参见“ F. Yamashita,稀土磁体在小型电机行业的应用”  ,第100-111页,第17届国际研讨会论文集,《稀土磁体及其应用》,2002年8月18日至22日,美国特拉华州纽瓦克,由GC Hadjipanayis和MJ Bonder编辑,Rinton出版社”)。 相对于抗氧化稀土金属基磁体粉末,树脂粘合剂优选以3重量%以下的量掺入化合物中。 在获得化合物中,可以以本领域中通常使用的量添加添加剂,例如偶联剂,润滑剂,硬化剂等。 \n\n [0048] 使用根据本发明的抗氧化稀土金属基磁体粉末的稀土金属基磁体通过将以上述方式制备的稀土金属基磁体用化合物通过压缩成型为预定形状而制备。 成型,注射成型,挤出成型等。 例如,在采用压缩成型方法的情况下,除了现有技术中通常使用的压缩成型方法外,还包括将压缩成型和压延相结合的成型方法(例如,参见上文:  ,《稀土磁体在小型电机行业中的应用》,第100-111页,第十七届国际研讨会论文集,《稀土磁体及其应用》,2002年8月18-22日,美国特拉华州纽瓦克,GC Hadjipanayis编辑 和MJ Bonder,林顿出版社”)。 \n\n [0049] 通过压缩模制用于稀土金属基粘结磁体的化合物,构成形成在磁体粉末的最外表面上的粘附层的颜料被推入磁体粉末的颗粒和另一颗粒之间的间隙中以填充该间隙。 以这种方式,可以减少在粘结磁体的表面和内部产生气孔。 化合物的压缩成型优选在0.1GPa至1GPa的范围内的压力下进行,并且更优选在0.3GPa至0.6GPa的范围内的压力下进行。 如果压力应低于0.1GPa,则压力太低而不能实现粘结磁体的足够高的致密化,这导致不能有效地减少孔的产生。 另一方面,如果压力超过1GPa,则压力变得过高,有可能引起磁铁粉末的破损而产生新的破损面的担心。 尽管取决于树脂粘合剂的类型,但是成型温度通常在室温(20℃)至120℃的范围内。 为了通过减小​​磁体粉末颗粒之间或磁体粉末颗粒与树脂粘合剂之间的摩擦来获得高密度的粘结磁体,或者为了便于填充磁体粉末的颗粒与另一颗粒之间的空隙而用 通过增加流动性以确保颜料的平滑运动而形成构成在磁铁粉末的最外表面上形成的粘附层的颜料,模制温度优选设定在80℃至100℃的范围内。 \n\n [0050] 在将热固性树脂用作树脂粘合剂的情况下,最终将如此获得的成型体进行加热和硬化以获得稀土金属基粘结磁体。 模制品的加热和硬化按照常规方法进行,例如,在惰性气体(例如氮气)中在140℃至200℃的温度下加热1至5小时。 气体,氩气等)或在真空中。 \n\n [0051] 此外,为了赋予进一步的耐腐蚀性等,可以在稀土金属系粘接剂上形成树脂涂料涂膜的单层或叠层,电镀涂膜等的各种涂膜。 根据本发明生产的磁体。 \n\n 例子 \n\n [0052] 下面通过实施例更详细地解释本发明,但是应当理解,本发明不限于此。 在以下实施例中,使用HDDR磁体粉末(平均晶体粒径:0.4μm),其通过射频熔融并制造组成为:12.8at%Nd,1.0at%Dy,6.3at%的铸锭来制备。  B,14.8 at%Co,0。5 at%Ga,0.09 at%Zr和余量的Fe,在1100°C的氩气气氛中将铸锭退火24小时,制得平均粒径为50% 通过在氧浓度为0.5%以下的氩气气氛中进行粉碎,将粉碎后的粉末在0.15MPa的加压氢气气氛下,在870℃下进行3小时的加氢热处理,并进行脱氢处理后的冷却,从而得到100μm。 氩气在850°C减压(1 kPa)下流动1小时。 \n\n 实例一 \n\n (示例A) \n\n 实验1:生产抗氧化的HDDR磁铁粉 \n\n [0053] 含有17重量%的炭黑(平均粒径0.08μm)的水性处理溶液(粘度:10cP)是作为颜料的无机颜料和15重量%的水溶性环氧羧酸盐作为有机分散介质。 通过将炭黑与水溶性环氧羧酸盐在水中混合并用氨将pH值控制到7.2来制备。 \n\n [0054] 在50mL的处理溶液中浸渍50g的HDDR磁铁粉末,在室温下混合搅拌3分钟后,使用水流吸引器减压过滤30秒,回收处理过的磁铁粉末。 然后在真空中于100°C加热干燥1小时。 将由此获得的附聚物在研钵中崩解,以获得黑色的抗氧化HDDR磁体粉末,其表面粘附有包含炭黑作为主要成分的粘附层。 \n\n [0055] 对于这样制备的1g的抗氧化HDDR磁体粉末,进行包括在空气中在150℃下加热100小时的加热测试,以测量相对于测试前的重量,由于测试后的氧化引起的重量增加率。  。 结果在表1中给出。 \n\n 实验2:粘结磁铁的制造及其特性 \n\n [0056] 将重量比为100∶3的环氧树脂和酚醛固化剂的混合物溶解在甲乙酮中以制备树脂溶液。 将实验1中制得的抗氧化HDDR磁体粉末与树脂溶液均匀混合后,树脂溶液应占抗氧化HDDR磁体粉末和树脂溶液总重量的3%, 使甲乙酮在常温下蒸发,得到粉末状的稀土金属系粘结磁铁用化合物。 对得到的稀土类金属粘结磁铁用化合物进行压缩成型(在100℃的磁场下进行热成型,Hex = 0.96MA / m,0.6GPa),在150℃下加热1小时。 在氩气气氛中于150°C固化环氧树脂。 从而获得长度为12.0mm,宽度为7.6mm,高度为7.4mm,密度为5.9g / cm 3的粘结磁体。 [0057] 对由此制造的粘结磁体进行加热测试,该测试包括在空气中在150℃下加热100小时,以测量相对于测试之前的重量,由于测试之后的氧化引起的重量增加率。 此外,在将粘结磁体磁化之后,分别进行包括在空气中在100℃下加热500小时和在空气中在150℃下加热100小时的加热测试,以测量磁通量劣化因子(不可逆)。 每次测试之前测试后的磁通量)。 然后,对在空气中在150℃下进行了100小时的加热试验的粘结磁铁进行再磁化,以测定再磁化后的磁通劣化率(永久退磁率)。 测试。 结果在  无花果 1个  和 2  并在表2中。 \n\n (示例B) \n\n 实验1:生产抗氧化的HDDR磁铁粉 \n\n [0058] 制备含有17重量%的茚满蒽烯(平均粒径0.06μm)作为有机颜料和15重量%的水溶性环氧羧酸盐作为有机分散介质的水性处理溶液(粘度:15cP)。 通过将茚丹蒽与水溶性环氧羧酸盐在水中混合,并用氨将pH值控制在7.2。 \n\n [0059] 因此,类似于实施例A中的实验1,使用上述处理溶液来制备靛蓝色的抗氧化HDDR磁体粉末,其表面粘附有包含茚三蒽作为主要成分的粘附层。 然后,对所得的耐氧化HDDR磁铁粉末进行与实施例A的实验1同样的加热试验,以测定相对于试验前的重量的试验后的氧化引起的重量增加率。 结果在表1中给出。 \n\n 实验2:粘结磁铁的制造及其特性 \n\n [0060] 除了使用上述实验1中得到的耐氧化HDDR磁铁粉末以外,与实施例A的实验2同样地制造粘结磁铁。 对如此制造的粘结磁体进行与实施例A的实验2相同的试验。 结果在  无花果 1个  和 2  并在表2中。 \n\n (范例C) \n\n 实验1:生产抗氧化的HDDR磁铁粉 \n\n [0061] 含有17wt%的铜酞菁铜(平均粒径0.06μm)的水性处理溶液(粘度:17cP),所述酞菁铜是用作颜料的有机颜料和15wt%的水溶性环氧羧酸盐作为有机分散介质。 通过将酞菁铜与水溶性环氧羧酸盐在水中混合并用氨水将pH值控制到7.2来制备。 \n\n [0062] 因此,类似于实施例A中的实验1,使用上述处理溶液来制备靛蓝色的抗氧化HDDR磁体粉末,该粉末具有在其表面上粘附有包含酞菁铜作为主要成分的粘附层。 然后,对所得的耐氧化HDDR磁铁粉末进行与实施例A的实验1同样的加热试验,以测定相对于试验前的重量的试验后的氧化引起的重量增加率。 结果在表1中给出。 \n\n [0063] 实验2:粘结磁铁的制造及其特性 \n\n [0064] 除了使用上述实验1中得到的耐氧化HDDR磁铁粉末以外,与实施例A的实验2同样地制造粘结磁铁。 对如此制造的粘结磁体进行与实施例A的实验2相同的试验。 结果在  无花果 1个  和 2  并在表2中。 \n\n (示例D) \n\n 实验1:生产抗氧化的HDDR磁铁粉 \n\n [0065] 一种乙醇处理溶液(粘度:30 cP),其中包含17重量%的茚满蒽(平均粒径为0.06 µm),它是用作颜料的有机颜料和15重量%的丙烯酸类聚合物基高分子分散介质作为有机分散介质 通过将阴丹士林与丙烯酸类聚合物基高分子分散介质在乙醇中混合制得。 \n\n [0066] 因此,类似于实施例A中的实验1,使用上述处理溶液来制备靛蓝色的抗氧化HDDR磁体粉末,该粉末具有粘附有阴丹士林作为主要成分的粘附层至其表面。 然后,对所得的耐氧化HDDR磁铁粉末进行与实施例A的实验1同样的加热试验,以测定相对于试验前的重量的试验后的氧化引起的重量增加率。 结果在表1中给出。 \n\n 实验2:粘结磁铁的制造及其特性 \n\n [0067] 除了使用上述实验1中得到的耐氧化HDDR磁铁粉末以外,与实施例A的实验2同样地制造粘结磁铁。 对如此制造的粘结磁体进行与实施例A的实验2相同的试验。 结果在  无花果 1个  和 2  并在表2中。 \n\n (示例E) \n\n 实验1:生产抗氧化的HDDR磁铁粉 \n\n [0068] 一种乙醇处理溶液(粘度:28 cP),其中包含17重量%的炭黑(平均粒径0.08 µm),该炭黑是用作颜料的无机颜料,而15重量%是基于丙烯酸聚合物的高分子分散介质作为有机分散剂 通过将炭黑与丙烯酸类聚合物基高分子分散介质在乙醇中混合制备介质。 \n\n [0069] 因此,类似于实施例A中的实验1,使用上述处理溶液来制备黑色的抗氧化HDDR磁体粉末,其表面粘附有包含炭黑作为主要成分的粘附层。 然后,对所得的耐氧化HDDR磁铁粉末进行与实施例A的实验1同样的加热试验,以测定相对于试验前的重量的试验后的氧化引起的重量增加率。 结果在表1中给出。实验2:粘结磁体的制造及其特性 \n\n [0070] 除了使用上述实验1中得到的耐氧化HDDR磁铁粉末以外,与实施例A的实验2同样地制造粘结磁铁。 对如此制造的粘结磁体进行与实施例A的实验2相同的试验。 结果在  无花果 1个  和 2 并在表2中。 \n\n (比较例) \n\n [0071] 对未进行任何表面处理的HDDR磁体粉末进行类似于实施例A的实验1中的加热试验,并且相对于试验前的重量,测量了由于试验后的氧化引起的重量增加率。 结果在表1中给出。此外,以与实施例A的实验2中相同的方式制造粘结磁体,不同之处在于,使用未进行任何表面处理的HDDR磁体粉末。 对如此制造的粘结磁体进行与实施例A的实验2相同的试验。 结果在  无花果 1个  和 2  并在表2中。 \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n 表格1    抗氧化HDDR磁铁粉 增重率(%)  例子A0.05  例子B0.05  范例C0.06  例子D0.04  例E0.04  比较例(未处理粉末)0.30   \n\n 表2    粘结磁铁 增重率(%) 100°C×500hrs磁通劣化率(%) 150°C×100小时磁通劣化率(%) 再磁化后的永久退磁系数(%)(由于氧化而导致的磁通劣化系数)  例子A0.10-11.0-29.7-4.4  例子B0.09-9.8-29.0-4.0  范例C0.11-11.2-30.4-4.6  例子D0.09-12.0-28.2-4.2  例E0.09-10.3-28.7-4.5  比较例0.32-13.8-36.6-7.9  (n=3)   \n\n [0072] 从表1中可以清楚地看出,与未进行任何表面处理的HDDR磁体粉末相比,实施例A至实施例E中制备的抗氧化HDDR磁体粉末各自由于氧化引起的重量增加率均低得多,并且 因此,上述磁体粉末具有优异的抗氧化性。 \n\n [0073] 此外,从  无花果 1个  和 2  由表2可知,与比较例的粘结磁铁相比,实施例A〜实施例E的粘结磁铁的氧化引起的重量增加率和磁通劣化率较小。 实施例A至实施例E的粘结磁体的这种优异特性可以通过以下事实来解释:使用具有优异抗氧化性的HDDR磁体粉末将它们成形为预定形状,并且由于裂纹的产生而产生表面缺陷。 在制备化合物的过程中,在将化合物成型为预定形状的压缩成型过程中或成型之后的任何时间,磁体粉末等都受到抑制,从而有效地防止了氧化的发生。 此外,通过用扫描电子显微镜观察上方的粘结磁体的表面,可以发现其孔被粘结有粘结磁体的树脂粘合剂的颜料颗粒密封。 认为该效果也有助于粘结磁体的优异的抗氧化性。 \n\n 评估A:粘结磁体表面上存在的孔数 \n\n [0074] 对于实施例A,实施例B和比较例中的三种粘结磁体中的每一种,将长度为12.0mm,高度为7.4mm的平面沿高度方向划分为7个相等的区域,并进行了划分。 在压缩方向上,即从上侧到下侧,对区域进行编号。 用电子显微镜观察每个区域的表面。 在每个区域中累加直径为20 µm或更大的孔,每1 mm 2的孔数  图3 。 从  图3 可以清楚地理解,实施例A和实施例B的粘结磁体的孔数远小于比较例的粘结磁体的孔数。 评价B:浸入水中的持续时间与粘结磁体中的重量变化率之间的关系 \n\n [0075] 对于实施例A,实施例B和比较例中的三种粘结磁体中的每一种,研究了浸入水中的持续时间与重量变化率之间的关系。 结果在  图4 。 显然从  图4 因此,实施例A和实施例B的粘结磁体的重量变化率远小于比较例的粘结磁体的重量变化率。 此外,通过对比较例的粘结磁体进行孔密封处理而获得的粘结磁体的重量变化率在实施例A和实施例B的粘结磁体的重量变化率与比较例的粘结磁体的重量变化率之间。 这些结果表明,通过对比较例的粘结磁体进行孔密封处理而获得的粘结磁体在表面上具有有效处理的孔,但是磁体内部的孔没有得到充分处理。 另一方面,表明对于实施例A和实施例B的粘结磁体,不仅在磁体的表面而且在磁体的内部都减少了气孔的产生。 注:比较例的粘结磁铁的气孔密封处理方法 \n\n [0076] 将比较例的粘结磁体浸入在实施例A的步骤1中制备的水性处理溶液中,并且在将压力保持在0.5Pa的真空容器中在减压下将处理溶液渗透到孔中之后,将粘结磁体制成 在恢复常压后从容器中取出并用水冲洗其表面以除去过量粘附的处理溶液,然后在120℃的空气中干燥20分钟。 \n\n 实施例二 \n\n (示例A) \n\n 实验1:生产抗氧化的HDDR磁铁粉 \n\n [0077] 将100g的HDDR磁铁粉末浸入300mL的浓度为0.09mol / L的磷酸的乙醇溶液中,在室温下混合搅拌3分钟后,减压回收如此处理的磁铁粉末。 使用水流抽吸器过滤30秒钟,然后加热至真空,在120°C下干燥30分钟。 由此在HDDR磁体粉末的表面上形成由无机磷酸化合物制成的涂膜。 \n\n [0078] 含有17wt%的铜酞菁铜(平均粒径0.06μm)的水性处理溶液(粘度:17cP),所述酞菁铜是用作颜料的有机颜料和15wt%的水溶性环氧羧酸盐作为有机分散介质。 通过将酞菁铜与水溶性环氧羧酸盐在水中混合并用氨将pH值控制到7.2来制备。 \n\n [0079] 将50g在其表面上形成有由无机磷酸化合物形成的涂膜的HDDR磁体粉末浸入50mL的处理溶液中,并且在室温下混合并搅拌3分钟之后,将如此处理的磁体粉末 通过使用水流抽吸器减压过滤30秒来回收水,然后在100℃下真空干燥1小时以干燥。 将由此得到的附聚物在研钵中崩解,以获得靛蓝色的抗氧化HDDR磁体粉末,其具有包含铜酞菁作为主要成分的粘附层,该粘附层利用由无机磷制成的涂膜粘附至最外表面。 在它们之间插入酸性化合物。 \n\n [0080] 对于这样制备的1g的抗氧化HDDR磁体粉末,进行包括在空气中在150℃下加热100小时的加热测试,以测量相对于测试前的重量,由于测试后的氧化引起的重量增加率。  。 结果在表3中给出。 \n\n 实验2:粘结磁铁的制造及其特性 \n\n [0081] 将重量比为100∶3的环氧树脂和酚醛固化剂的混合物溶解在甲乙酮中以制备树脂溶液。 将实验1中制得的抗氧化HDDR磁体粉末与树脂溶液均匀混合后,树脂溶液应占抗氧化HDDR磁体粉末和树脂溶液总重量的3%, 使甲乙酮在常温下蒸发,得到粉末状的稀土金属系粘结磁铁用化合物。 对得到的稀土类金属粘结磁铁用化合物进行压缩成型(在100℃的磁场下进行热成型,Hex = 0.96MA / m,0.6GPa),在150℃下加热1小时。 在氩气气氛中于150°C固化环氧树脂。 从而获得长度为12.0mm,宽度为7.6mm,高度为7.4mm,密度为5.9g / cm 3的粘结磁体。 [0082] 对由此制造的粘结磁体进行加热测试,该测试包括在空气中在150℃下加热100小时,以测量相对于测试之前的重量,由于测试之后的氧化引起的重量增加率。 此外,在将粘结磁体磁化之后,分别进行包括在空气中在100℃下加热500小时和在空气中在150℃下加热100小时的加热测试,以测量磁通量劣化因子(不可逆)。 每次测试之前测试后的磁通量)。 然后,对在空气中在150℃下进行了100小时的加热试验的粘结磁铁进行再磁化,以测定再磁化后的磁通劣化率(永久退磁率)。 测试。 结果在  无花果 5  和 6  并在表4中。 \n\n (示例B) \n\n 实验1:生产抗氧化的HDDR磁铁粉 \n\n [0083] 一种乙醇处理溶液(粘度:30 cP),其中包含17重量%的茚满蒽(平均粒径0.06 µm),它是用作颜料的有机颜料,而15重量%的丙烯酸类聚合物基高分子分散介质作为有机分散剂 通过将阴丹士林与基于丙烯酸聚合物的高分子分散介质在乙醇中混合来制备。 \n\n [0084] 因此,类似于实施例A中的实验1,使用上述处理溶液来制备具有靛蓝色作为主要成分的粘附层的靛蓝色耐氧化HDDR磁体粉末,该粘附层通过涂层粘附至最外表面。 由无机磷酸化合物制成的薄膜插入其间。 然后,对所得的耐氧化HDDR磁铁粉末进行与实施例A的实验1同样的加热试验,以测定相对于试验前的重量的试验后的氧化引起的重量增加率。 结果在表3中给出。 \n\n 实验2:粘结磁铁的制造及其特性 \n\n [0085] 除了使用上述实验1中得到的耐氧化HDDR磁铁粉末以外,与实施例A的实验2同样地制造粘结磁铁。 对如此制造的粘结磁体进行与实施例A的实验2相同的试验。 结果在  无花果 5  和 6  并在表4中。 \n\n (范例C) \n\n 实验1:生产抗氧化的HDDR磁铁粉 \n\n [0086] 将100g HDDR磁体粉末浸入300mL浓度为0.14mol / L的磷酸二氢钠的水溶液中,在室温下混合搅拌3分钟后,减压回收如此处理的磁体粉末。 使用水流抽吸器过滤30秒钟,然后加热至真空,在120°C下干燥30分钟。 由此在HDDR磁体粉末的表面上形成由无机磷酸化合物制成的涂膜。 \n\n [0087] 因此,与实施例A的实验1相同,使用与实施例A的实验1相同的处理液,制作具有以酞菁铜为主要成分的附着层的靛蓝色耐氧化HDDR磁铁粉末。 将其隔着由无机磷酸化合物制成的涂膜粘附在最外表面上。 然后,对所得的耐氧化HDDR磁铁粉末进行与实施例A的实验1同样的加热试验,以测定相对于试验前的重量的试验后的氧化引起的重量增加率。 结果在表3中给出。 \n\n 实验2:粘结磁铁的制造及其特性 \n\n [0088] 除了使用上述实验1中得到的耐氧化HDDR磁铁粉末以外,与实施例A的实验2同样地制造粘结磁铁。 对如此制造的粘结磁体进行与实施例A的实验2相同的试验。 结果在  无花果 5  和 6  并在表4中。 \n\n (示例D) \n\n 实验1:生产抗氧化的HDDR磁铁粉 \n\n [0089] 与实施例C的实验1同样地,使用与实施例B的实验1相同的处理液,制作以靛蓝烯为主要成分的粘附层的靛蓝色耐氧化HDDR磁铁粉末。 在其最外表面上夹有由无机磷酸化合物制成的涂膜。 然后,对所得的耐氧化HDDR磁铁粉末进行与实施例A的实验1同样的加热试验,以测定相对于试验前的重量的试验后的氧化引起的重量增加率。 结果在表3中给出。实验2:粘结磁体的制造及其特性 \n\n [0090] 除了使用上述实验1中得到的耐氧化HDDR磁铁粉末以外,与实施例A的实验2同样地制造粘结磁铁。 对如此制造的粘结磁体进行与实施例A的实验2相同的试验。 结果在  无花果 5  和 6  并在表4中。 \n\n (示例E) \n\n 实验1:生产抗氧化的HDDR磁铁粉 \n\n [0091] 通过本领域公知的真空沉积法在HDDR磁体粉末的表面上形成0.3μm厚的Al涂膜。 \n\n [0092] 因此,与实施例A的实验1相同,使用与实施例A的实验1相同的处理液,制作具有以铜酞菁为主要成分的附着层的靛蓝色耐氧化HDDR磁铁粉末。 其间夹有Al涂膜而粘附到最外表面。 然后,对所得的耐氧化HDDR磁铁粉末进行与实施例A的实验1同样的加热试验,以测定相对于试验前的重量的试验后的氧化引起的重量增加率。 结果在表3中给出。 \n\n 实验2:粘结磁铁的制造及其特性 \n\n [0093] 除了使用上述实验1中得到的耐氧化HDDR磁铁粉末以外,与实施例A的实验2同样地制造粘结磁铁。 对如此制造的粘结磁体进行与实施例A的实验2相同的试验。 结果在  无花果 5  和 6  并在表4中。 \n\n (比较例1) \n\n [0094] 对未进行任何表面处理的HDDR磁铁粉末进行与实施例A的实验1相同的加热试验,并测定相对于试验前的重量,试验后的氧化引起的重量增加率。 结果在表3中给出。此外,以与实施例A的实验2中相同的方式制造粘结磁体,不同之处在于,使用未进行任何表面处理的HDDR磁体粉末。 对如此制造的粘结磁体进行与实施例A的实验2相同的试验。 结果在  无花果 5  和 6  并在表4中。 \n\n (比较例2) \n\n [0095] 对如实施例A的实验1中所制得的在其表面上形成有由无机磷酸化合物制成的涂膜的HDDR磁体粉末,进行与实施例A的实验1中相似的加热试验,并且重量增加率 关于试验前的重量,是由于试验后的氧化引起的。 结果在表3中给出。此外,除了使用该HDDR磁体粉末以外,以与实施例A的实验2相同的方式制造粘结磁体。 对如此制造的粘结磁体进行与实施例A的实验2相同的试验。 结果在  无花果 5  和 6  并在表4中。 \n\n (比较例3) \n\n [0096] 对如实施例C的实验1中制得的在其表面上形成有由无机磷酸化合物制成的涂膜的HDDR磁体粉末,进行与实施例A的实验1中相似的加热试验,并进行增重比测试。 相对于测试前的重量,由于测试后的氧化所致。 结果在表3中给出。此外,除了使用该HDDR磁体粉末以外,以与实施例A的实验2相同的方式制造粘结磁体。 对如此制造的粘结磁体进行与实施例A的实验2相同的试验。 结果在  无花果 5  和 6  并在表4中。 \n\n (比较例4) \n\n [0097] 对如实施例E的实验1中制得的在其表面上形成有Al涂膜的HDDR磁体粉末进行类似于实施例A的实验1中的加热试验,并且在进行测试后由于氧化引起的重量增加率。 相对于测试前的重量。 结果在表3中给出。此外,除了使用该HDDR磁体粉末以外,以与实施例A的实验2相同的方式制造粘结磁体。 对如此制造的粘结磁体进行与实施例A的实验2相同的试验。 结果在  无花果 5  和 6  并在表4中。 \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n 表3    抗氧化HDDR磁铁粉 增重率(%)  比较例1(未处理粉末)0.30  比较例20.01  比较例30.01  比较例40.01  例子A0.01  例子B0.01  范例C0.01  例子D0.01  例E0.01   \n\n 表4    粘结磁铁 增重率(%) 100°C×500 hrs磁通劣化率(%) 150°C×100 hrs磁通劣化率(%) 再磁化后的永久退磁系数(%)(由于氧化而导致的磁通劣化系数)  比较例1 0.32-13.8-36.6-7.9  比较例20.34-13.0-39.1-9.0  比较例30.34-14.5-39.4-9.9  比较例40.33-14.1-35.0-7.7  例子A0.08-10.7-29.5-4.3  例子B0.06-12.6-27.9-3.8  范例C0.06-9.9-27.9-3.7  例子D0.05-11.3-27.3-3.8  例E0.07-11.5-28.9-4.0  (n=3)   \n\n [0098] 从表3中可以清楚地看出,实施例A至实施例E中制备的抗氧化HDDR磁体粉末,以及比较例2至比较例4中制备的表面涂覆HDDR磁体粉末,其抗氧化性均低得多。 与未进行比较例1的表面处理的HDDR磁铁粉末相比,由于氧化引起的重量增加率高,因此上述磁铁粉末的抗氧化性优异。 \n\n [0099] 但是,从  无花果 5  和 6  由表4可知,比较例2〜比较例4的粘结磁铁由于氧化而表现出明显的重量增加率和磁通劣化率,与比较例1的粘结磁铁相当。 与比较例1的粘结磁体相比,实施例A至实施例E的粘结磁体产生较小的重量增加率和由于氧化引起的磁通量劣化因子。 使用赋予其优异的抗氧化性的HDDR磁体粉末将它们成形为预定形状,并且与比较例2至比较例4的粘结磁体不同,由于磁体的裂纹而产生表面缺陷 在化合物的制备过程中,压缩成型过程中的任何时间都抑制粉末等。 将其捣碎成预定形状或成型后,从而有效地防止了氧化的发生。 此外,通过用扫描电子显微镜观察实施例A至实施例E的粘结磁体的表面,发现其孔被粘结有粘结磁体的树脂粘合剂的颜料颗粒密封。 认为该效果也有助于粘结磁体的优异的抗氧化性。 \n\n 工业适用性 \n\n [0100] 本发明具有工业实用性,因为其提供了不仅用于制造抗氧化性而且还具有优异的磁特性的,用于制造稀土金属类粘结磁铁的耐氧化稀土类金属磁铁粉末及其方法。 稀土金属系粘结磁体用化合物,稀土金属系粘结磁体及其制造方法。');
INSERT INTO `os_patent_instruction_text` VALUES (13009, 22838, '【技術分野】\n\n【0001】\n\n本発明は、耐酸化性に優れるとともに高い磁気特性を示す希土類系ボンド磁石を製造するために有用な、耐酸化性希土類系磁石粉末およびその製造方法に関する。\n\n【背景技術】\n\n【0002】\n\nNd-Fe-B系磁石粉末に代表されるR-Fe-B系磁石粉末などの希土類系磁石粉末を、バインダとして熱可塑性樹脂や熱硬化性樹脂などを用いて所定形状に成形することで製造される希土類系ボンド磁石は、樹脂バインダを含有しているために希土類系焼結磁石に比較すれば磁気特性が低くなるものの、フェライト磁石などに比べればなお十分に高い磁気特性を有しており、また、複雑形状や薄肉形状の磁石やラジアル異方性磁石を容易に得ることができるといった希土類系焼結磁石にはない特徴を持っている。従って、希土類系ボンド磁石は、特にスピンドルモータやステッピングモータなどの小型モータに多く用いられ、近年、その需要が増加している。\n\n希土類系磁石粉末は高い磁気特性を有するが、RやFeが組成の大半を占めることから腐食や酸化を起しやすいという問題がある。そのため、希土類系ボンド磁石の製造においては、まず、希土類系磁石粉末を、溶解もしくは溶融(軟化)させた樹脂バインダと混合して磁石粉末の表面が樹脂バインダで被覆されたコンパウンドと呼ばれる粉末顆粒状原料を調製した後、このコンパウンドを射出成形や圧縮成形や押出成形し、用いる樹脂バインダが熱硬化性樹脂である場合にはさらに加熱して樹脂バインダを硬化させることで所定形状に成形して製品化される。しかしながら、このようにして製品化された希土類系ボンド磁石であっても、その表面に希土類系磁石粉末が露出していると、わずかな酸やアルカリや水分などの存在によって磁石粉末が腐食して錆が発生したり、100℃程度の大気中でも酸化が進行したりするので、例えば部品組み込み後に磁気特性の劣化やばらつきを招くことがある。また、樹脂バインダとして汎用されているエポキシ樹脂やナイロン樹脂などは水分や酸素の透過性を有する。従って、これらの樹脂を樹脂バインダに用いた希土類系ボンド磁石においては、樹脂を透過した水分や酸素で希土類系磁石粉末が腐食したり酸化したりする可能性があることを否定できない。さらに、希土類系磁石粉末が腐食や酸化を起しやすいことに鑑みれば、射出成形を行う場合には混練成形時の温度条件に配慮する必要があるし、圧縮成形を行う場合には成形後の硬化処理を不活性ガス雰囲気中や真空中で行う必要がある。\n\n【0003】\n\n以上のような問題を解消すべく、例えば、下記の特許文献1において、希土類系磁石粉末の表面に、リン酸塩の被覆処理を施し、リン酸塩被膜で表面被覆された希土類系磁石粉末を用いて所定形状に成形することによる酸化劣化を防止した希土類系ボンド磁石の製造方法が提案されている。\n\n【特許文献1】特開昭64-11304号公報\n\n【発明の開示】\n\n【発明が解決しようとする課題】\n\n【0004】\n\n上記の特許文献1に記載された方法は、比較的低コストで高効率に希土類系磁石粉末に耐酸化性を付与することができることから、耐酸化性に優れた希土類系ボンド磁石を製造することができる方法として注目に値するものである。しかしながら、リン酸塩被膜は、リン酸塩被膜処理液成分と磁石粉末成分とが磁石粉末表面において化学反応することにより形成されるものであるため、その反応過程において、処理液中に磁石粉末の構成成分であるRやFeが溶出してしまうことで磁石粉末の表面付近(表面から深さ0.1μm程度)が変質して磁石粉末の磁気特性が劣化するという問題がある。また、このような磁石粉末を用いて所定形状に成形した希土類系ボンド磁石は、酸化による磁気特性の経時変化が大きいという問題がある。この現象は、ボンド磁石の成形時、磁石粉末の流れ性不足に起因して成形圧力により磁石粉末が割れたりし、酸化しやすい粒子破面が露出することなどによると推察される。これらの問題は、昨今における希土類系ボンド磁石に要求される高性能化の観点からは無視できない問題であり、早期に解決すべきものである。\n\nそこで本発明は、耐酸化性に優れるとともに高い磁気特性を示す希土類系ボンド磁石を製造するために有用な、耐酸化性希土類系磁石粉末およびその製造方法を提供することを目的とする。\n\n【課題を解決するための手段】\n\n【0005】\n\n上記の技術背景に基づいてなされた本発明の耐酸化性希土類系磁石粉末は、請求項1記載の通り、平均粒径(長径)が0.01μm〜0.5μmである有機顔料を主たる構成成分とする被着層を表面に有してなることを特徴とする。\n\n  また、請求項2記載の耐酸化性希土類系磁石粉末は、請求項1記載の耐酸化性希土類系磁石粉末において、有機顔料がインダンスレン系顔料またはフタロシアニン系顔料であることを特徴とする。\n\n  また、請求項3記載の耐酸化性希土類系磁石粉末は、請求項1または2記載の耐酸化性希土類系磁石粉末において、希土類系磁石粉末の平均粒径(長径)が200μm以下であることを特徴とする。\n\nまた、請求項4記載の耐酸化性希土類系磁石粉末は、請求項3記載の耐酸化性希土類系磁石粉末において、希土類系磁石粉末がHDDR磁石粉末であることを特徴とする。\n\nまた、本発明の平均粒径(長径)が0.01μm〜0.5μmである有機顔料を主たる構成成分とする被着層を表面に有してなる耐酸化性希土類系磁石粉末の製造方法は、請求項5記載の通り、希土類系磁石粉末と平均粒径(長径)が0.01μm〜0.5μmである有機顔料含有処理液を混合した後、顔料含有処理液が表面に付着した希土類系磁石粉末を乾燥することを特徴とする。\n\nまた、請求項6記載の製造方法は、請求項5記載の製造方法において、希土類系磁石粉末と顔料含有処理液を混合した後、濾過を行って顔料含有処理液が表面に付着した希土類系磁石粉末を取得することを特徴とする。\n\nまた、請求項7記載の製造方法は、請求項5または6記載の製造方法において、顔料含有処理液中における顔料の含有量が5重量%〜33重量%であることを特徴とする。\n\nまた、請求項8記載の製造方法は、請求項5乃至7のいずれかに記載の製造方法において、顔料含有処理液が有機分散媒を含有してなることを特徴とする。\n\nまた、本発明の希土類系ボンド磁石用コンパウンドは、請求項9記載の通り、請求項1記載の耐酸化性希土類系磁石粉末と樹脂バインダとからなることを特徴とする。\n\nまた、本発明の希土類系ボンド磁石は、請求項10記載の通り、請求項9記載の希土類系ボンド磁石用コンパウンドを用いて所定形状に成形されてなることを特徴とする。\n\n【発明の効果】\n\n【0006】\n\n本発明によれば、耐酸化性に優れるとともに高い磁気特性を示す希土類系ボンド磁石を製造するために有用な、耐酸化性希土類系磁石粉末およびその製造方法が提供される。\n\n【発明を実施するための最良の形態】\n\n【0007】\n\n本発明の耐酸化性希土類系磁石粉末は、例えば、希土類系磁石粉末と顔料含有処理液を混合した後、顔料含有処理液が表面に付着した希土類系磁石粉末を乾燥することにより製造することができる。\n\n【0008】\n\n顔料含有処理液の調製方法としては、例えば、アンモニアなどでpHを6.5〜9.0に調整した弱アルカリ性水に顔料を分散させる方法が挙げられる。処理液のpHを6.5〜9.0に調整するのは、処理液による希土類系磁石粉末の腐食を防止するためである。処理液の粘度は、良好な取扱性を確保するといった観点から、2cP〜50cPが望ましい。なお、顔料含有処理液は、エチルアルコールやイソプロピルアルコールなどの有機溶媒に顔料を分散させたものであってもよい。\n\n【0009】\n\n顔料としては、有機顔料と無機顔料のいずれの顔料も用いることができる。有機顔料としては、インダンスレン系顔料やフタロシアニン系顔料の他、アゾ系、キナクリドン系、アントラキノン系、ジオキサンジン系、インジゴ系、チオインジゴ系、ペリノン系、ペリレン系、イソインドレン系、アゾメチンアゾ系、ジケトピロロピロール系の顔料などが挙げられる。顔料として有機顔料を用いた場合、有機顔料を主たる構成成分とする被着層を表面に有してなる希土類系磁石粉末は、樹脂バインダとからなる希土類系ボンド磁石用コンパウンドに適度の粘弾性と優れた流動性を付与するとともに、被着層を構成する有機顔料が圧縮成形時に受ける応力を吸収して緩和するので磁石粉末の破砕が起こって新生破面が生成するといったことが起きにくくなる点において都合がよい。また、有機顔料の種類によっては、ボンド磁石に高抵抗性を付与することができることが期待される。中でも、インダンスレン系顔料やフタロシアニン系顔料は、耐食性や耐熱性に優れるので、これらは好適な有機顔料であるといえる。\n\n無機顔料としては、カーボンブラック、二酸化チタン、酸化鉄、酸化クロム、酸化亜鉛、アルミナ、硫化亜鉛、タルク、マイカ、炭酸カルシウムなどが挙げられる。顔料として無機顔料を用いた場合、希土類系磁石粉末の表面に形成された無機顔料を主たる構成成分とする被着層は、酸素や水蒸気などの非透過性に優れることから、磁石粉末にとりわけ優れた耐酸化性を付与することができる点において都合がよい。好適な無機顔料としては、カーボンブラックが挙げられる。\n\n【0010】\n\n顔料の平均粒径(長径)は、顔料含有処理液中における顔料の均一分散性を確保するといった観点から、0.01μm〜0.5μmが望ましい。平均粒径が0.01μm未満であると、その製造が困難であるとともに処理液中で凝集しやすくなって取扱性に劣る一方、平均粒径が0.5μmを超えると、処理液中における比重が大きくなってしまって沈降してしまったりする恐れがある。\n\n【0011】\n\n処理液中における顔料の含有量は、5重量%〜33重量%が望ましい。含有量が5重量%未満であると、十分量の顔料からなる被着層が希土類系磁石粉末の表面に形成されず、優れた耐酸化性を磁石粉末に付与することができなくなる恐れがある一方、含有量が33重量%を超えると、処理液中で顔料が凝集や沈降してしまい、その分散性が悪化する恐れがあるからである。なお、処理液中における顔料の含有量は、より望ましくは10重量%〜30重量%である。\n\n【0012】\n\n顔料含有処理液には有機分散媒を添加することが望ましい。有機分散媒は、処理液中での顔料の凝集や沈降を抑制する目的で使用されるものである。有機分散媒としては、アニオン性分散媒(脂肪族系多価カルボン酸、ポリエーテルポリエステルカルボン酸塩、高分子ポリエステル酸ポリアミン塩、高分子量ポリカルボン酸長鎖アミン塩など)、非イオン性分散媒(ポリオキシエチレンアルキルエーテルやソルビタンエステルなどのカルボン酸塩やスルフォン酸塩やアンモニウム塩など)、高分子分散媒(水溶性エポキシのカルボン酸塩やスルフォン酸塩やアンモニウム塩など、スチレン-アクリル酸共重合物、ニカワなど)が、上記の目的の観点から、また、顔料との親和性やコストの観点などから好適に用いられる。\n\n【0013】\n\n処理液中への有機分散媒の添加量は、9重量%〜24重量%が望ましい。添加量が9重量%未満であると、顔料の分散性が低下する恐れがある一方、24重量%を超えると、処理液の粘性が高くなりすぎて取扱性に劣る恐れがあるからである。\n\n【0014】\n\n耐酸化性希土類系磁石粉末は、例えば、以上のようにして調製された顔料含有処理液に、希土類系磁石粉末を浸漬して混合攪拌した後、顔料含有処理液が表面に付着した希土類系磁石粉末を濾取してからこれを乾燥して製造することができる。顔料含有処理液に希土類系磁石粉末を浸漬して混合攪拌する時間は、希土類系磁石粉末量などにも依存するが、概ね1分〜20分である。顔料含有処理液が表面に付着した希土類系磁石粉末を濾取する際、減圧濾過や加圧濾過を行えば、磁石粉末の表面に顔料をより強固に吸着せしめることができる。磁気特性の劣化を招くことなく希土類系磁石粉末に耐酸化性を付与するためには、乾燥は、自然乾燥または不活性ガス(窒素ガスやアルゴンガスなど)雰囲気中や真空中80℃〜120℃加熱乾燥が望ましい。加熱乾燥を採用する場合の乾燥時間は、希土類系磁石粉末量などにも依存するが、概ね20分〜2時間である。濾取した顔料含有処理液が表面に付着した希土類系磁石粉末が凝集塊となっている場合には予め解砕してから乾燥することが望ましい。なお、顔料含有処理液が表面に付着した希土類系磁石粉末の取得は、希土類系磁石粉末に顔料含有処理液を噴霧することで行ってもよい。\n\n【0015】\n\n以上のようにして希土類系磁石粉末の表面に形成された顔料を主たる構成成分とする被着層は、優れた耐酸化性を磁石粉末に付与するものであるが、リン酸塩被膜のように、磁石粉末成分が関与する化学反応に基づいて形成されたものではなく、ナノメートルオーダーの顔料微粒子が分子間力で磁石粉末の表面に吸着して形成されたものであるので、その形成過程において、処理液中に磁石粉末の構成成分であるRやFeが溶出してしまうことで磁石粉末の表面付近が変質して磁石粉末の磁気特性が劣化するといった問題などがない。従って、本発明の耐酸化性希土類系磁石粉末を用いれば、耐酸化性に優れるとともに高い磁気特性を示す希土類系ボンド磁石を製造することができる。\n\nさらに、本発明の耐酸化性希土類系磁石粉末を用いて製造された希土類系ボンド磁石が耐酸化性に優れるのは、磁石粉末が耐酸化性に優れることによるだけでなく、通常、ボンド磁石の成形時においては、磁石粉末の流れ性不足に起因して成形圧力により磁石粉末が割れて酸化しやすい粒子破面が生じたりすることがあるが、本発明の耐酸化性希土類系磁石粉末を用いた場合には、磁石粉末の表面に形成された被着層を構成する顔料粒子が、ボンド磁石の成形時における磁石粉末の流れ性を改善する潤滑作用を発揮することで、成形圧力により磁石粉末が割れて酸化しやすい粒子破面が生じたりすることが抑制されていることにもよると推測される。\n\nまた、希土類系ボンド磁石の成形方法として、圧縮成形方法や、圧縮成形と圧延成形を組み合わせた成形方法(例えば、F.Yamashita, Applications of Rare-Earth Magnets to the Small motor industry, pp.100-111, Proceedings of the seventeenth international workshop, Rare Earth Magnets and Their Applications, August 18-22, 2002, Newark, Delaware, USA, Edited by G.C. Hadjipanayis and M.J.Bonder, Rinton Pressを参照)などを採用した場合、通常、製造されたボンド磁石の表面には無数の空孔部が存在す\n\nるが、本発明の耐酸化性希土類系磁石粉末を用いて製造された希土類系ボンド磁石においては、そのような空孔部を、磁石粉末の表面に形成された被着層を構成する顔料粒子が封孔するという効果があり、このことも本発明の耐酸化性希土類系磁石粉末を用いて製造された希土類系ボンド磁石が耐酸化性に優れることに寄与していると考えられる。\n\n【0016】\n\n上記の特許文献1に記載されているリン酸塩被膜処理液を用いた場合に起る、希土類系磁石粉末の表面付近が変質するといった現象は、とりわけ、平均粒径(長径)が小さい(例えば200μm以下)磁石粉末に対して磁気特性の劣化を顕著に引き起すことになる。しかしながら、本発明によれば、平均粒径(長径)が小さい希土類系磁石粉末、例えば、平均粒径が80μm〜100μm程度の、希土類系磁石合金を水素中で加熱して水素を吸蔵させた後、脱水素処理し、次いで冷却することによって得られる磁気的異方性のHDDR(Hydrogenation-Disproportionation-Desorption-Recombination)磁石粉末(特公平6-82575号公報参照)などに対しても、磁気特性の劣化を引き起すことなく優れた耐酸化性を付与することができる。なお、希土類系磁石粉末は、予め、自体公知の方法によって酸洗や脱脂や洗浄などの前処理が施されたものであってもよい。\n\n【実施例】\n\n【0017】\n\n以下、本発明を実施例によってさらに詳細に説明するが、本発明はこれに限定して解釈されるものではない。なお、以下の実施例は、高周波溶解によって組成:Nd12.8原子%,Dy1.0原子%,B6.3原子%,Co14.8原子%,Ga0.5原子%,Zr0.09原子%,残部Feの鋳隗を作製し、アルゴンガス雰囲気中で1100℃×24時間焼鈍したものを酸素濃度0.5%以下のアルゴンガス雰囲気中で粉砕して平均粒径100μmの粉砕粉としてからこれを0.15MPaの水素ガス加圧雰囲気中で870℃×3時間の水素化熱処理を行い、その後、減圧(1kPa)アルゴンガス流気中で850℃×1時間の脱水素処理を行ってから冷却して製造したHDDR磁石粉末(平均結晶粒径0.4μm)を用いて行った。\n\n【0018】\n\n実施例A:\n\n実験1:耐酸化性HDDR磁石粉末の製造\n\n顔料として無機顔料であるカーボンブラック(平均粒径0.08μm)を17重量%と有機分散媒として水溶性エポキシのカルボン酸塩を15重量%含み、アンモニアでpHを7.2に調整して水性処理液(粘度10cP)を調製した。\n\n50mlの処理液にHDDR磁石粉末50gを室温で3分間浸漬して混合攪拌した後、処理済磁石粉末を水流アスピレータを用いて30秒間減圧濾過を行って濾取し、その後、真空中100℃で1時間加熱乾燥した。得られた凝集塊を乳鉢で解砕することで、カーボンブラックを主たる構成成分とする被着層を表面に有してなる黒色の耐酸化性HDDR磁石粉末を製造した。\n\nこのようにして製造された耐酸化性HDDR磁石粉末1gに対し、大気中150℃で100時間加熱する加熱試験を行い、試験前に対する試験後における酸化による重量増加率を測定した。結果を表1に示す。\n\n【0019】\n\n実験2:ボンド磁石の製造とその特性\n\nエポキシ樹脂とフェノール系硬化剤を重量比率で100:3の割合でメチルエチルケトンに溶解して樹脂液を調製した。実験1で製造した耐酸化性HDDR磁石粉末と樹脂液を、耐酸化性HDDR磁石粉末と樹脂液の合計重量に対する樹脂液の重量の比率が3%となるように均一混合した後、メチルエチルケトンを常温で蒸発させて粉末顆粒状の希土類系ボンド磁石用コンパウンドを得た。得られた希土類系ボンド磁石用コンパウンドを、圧縮成形(100℃温間磁場中成形、Hex=0.96MA/m、0.6GPa)し、得られた成形体を150℃のアルゴンガス雰囲気中で1時間加熱してエポキシ樹脂を硬化させて、寸法が縦12.0mm×横7.6mm×高さ7.4mmで密度が5.9g/cm3のボ\n\nンド磁石を製造した。\n\nこうして製造されたボンド磁石に対し、大気中150℃で100時間加熱する加熱試験を行い、試験前に対する試験後における酸化による重量増加率を測定した。また、ボンド磁石に対して着磁を行った後、大気中100℃で500時間加熱する加熱試験と大気中150℃で100時間加熱する加熱試験を行い、それぞれの加熱試験について、試験前に対する試験後における磁束劣化率(不可逆減磁率)を測定した。さらに、大気中150℃で100時間加熱する加熱試験を行ったボンド磁石については再着磁を行い、加熱試験前に対する再着磁後における磁束劣化率(永久減磁率)を測定した。これらの結果を図1と図2と表2に示す。\n\n【0020】\n\n実施例B:\n\n実験1:耐酸化性HDDR磁石粉末の製造\n\n顔料として有機顔料であるインダンスレン(平均粒径0.06μm)を17重量%と有機分散媒として水溶性エポキシのカルボン酸塩を15重量%含み、アンモニアでpHを7.2に調整して水性処理液(粘度15cP)を調製した。\n\nこの処理液を用いて実施例Aの実験1と同様にしてインダンスレンを主たる構成成分とする被着層を表面に有してなる藍色の耐酸化性HDDR磁石粉末を製造した。こうして製造された耐酸化性HDDR磁石粉末に対し、実施例Aの実験1と同様の加熱試験を行い、試験前に対する試験後における酸化による重量増加率を測定した。結果を表1に示す。\n\n【0021】\n\n実験2:ボンド磁石の製造とその特性\n\n実験1で製造した耐酸化性HDDR磁石粉末を用いて実施例Aの実験2と同様にしてボンド磁石を製造した。こうして製造されたボンド磁石に対し、実施例Aの実験2と同様の各種試験を行った。これらの結果を図1と図2と表2に示す。\n\n【0022】\n\n実施例C:\n\n実験1:耐酸化性HDDR磁石粉末の製造\n\n顔料として有機顔料である銅フタロシアニン(平均粒径0.06μm)を17重量%と有機分散媒として水溶性エポキシのカルボン酸塩を15重量%含み、アンモニアでpHを7.2に調整して水性処理液(粘度17cP)を調製した。\n\nこの処理液を用いて実施例Aの実験1と同様にして銅フタロシアニンを主たる構成成分とする被着層を表面に有してなる藍色の耐酸化性HDDR磁石粉末を製造した。こうして製造された耐酸化性HDDR磁石粉末に対し、実施例Aの実験1と同様の加熱試験を行い、試験前に対する試験後における酸化による重量増加率を測定した。結果を表1に示す。\n\n【0023】\n\n実験2:ボンド磁石の製造とその特性\n\n実験1で製造した耐酸化性HDDR磁石粉末を用いて実施例Aの実験2と同様にしてボンド磁石を製造した。こうして製造されたボンド磁石に対し、実施例Aの実験2と同様の各種試験を行った。これらの結果を図1と図2と表2に示す。\n\n【0024】\n\n実施例D:\n\n実験1:耐酸化性HDDR磁石粉末の製造\n\n顔料として有機顔料であるインダンスレン(平均粒径0.06μm)を17重量%と有機分散媒としてアクリル重合物系高分子分散媒を15重量%含んだエチルアルコール処理液(粘度30cP)を調製した。\n\nこの処理液を用いて実施例Aの実験1と同様にしてインダンスレンを主たる構成成分とする被着層を表面に有してなる藍色の耐酸化性HDDR磁石粉末を製造した。こうして製造された耐酸化性HDDR磁石粉末に対し、実施例Aの実験1と同様の加熱試験を行い、試験前に対する試験後における酸化による重量増加率を測定した。結果を表1に示す。\n\n【0025】\n\n実験2:ボンド磁石の製造とその特性\n\n実験1で製造した耐酸化性HDDR磁石粉末を用いて実施例Aの実験2と同様にしてボンド磁石を製造した。こうして製造されたボンド磁石に対し、実施例Aの実験2と同様の各種試験を行った。これらの結果を図1と図2と表2に示す。\n\n【0026】\n\n実施例E:\n\n実験1:耐酸化性HDDR磁石粉末の製造\n\n顔料として無機顔料であるカーボンブラック(平均粒径0.08μm)を17重量%と有機分散媒としてアクリル重合物系高分子分散媒を15重量%含んだエチルアルコール処理液(粘度28cP)を調製した。\n\nこの処理液を用いて実施例Aの実験1と同様にしてカーボンブラックを主たる構成成分とする被着層を表面に有してなる黒色の耐酸化性HDDR磁石粉末を製造した。こうして製造された耐酸化性HDDR磁石粉末に対し、実施例Aの実験1と同様の加熱試験を行い、試験前に対する試験後における酸化による重量増加率を測定した。結果を表1に示す。\n\n【0027】\n\n実験2:ボンド磁石の製造とその特性\n\n実験1で製造した耐酸化性HDDR磁石粉末を用いて実施例Aの実験2と同様にしてボンド磁石を製造した。こうして製造されたボンド磁石に対し、実施例Aの実験2と同様の各種試験を行った。これらの結果を図1と図2と表2に示す。\n\n【0028】\n\n比較例:\n\n何らの表面処理も行っていないHDDR磁石粉末に対し、実施例Aの実験1と同様の加熱試験を行い、試験前に対する試験後における酸化による重量増加率を測定した。結果を表1に示す。また、何らの表面処理も行っていないHDDR磁石粉末を用いて実施例Aの実験2と同様にしてボンド磁石を製造した。こうして製造されたボンド磁石に対し、実施例Aの実験2と同様の各種試験を行った。これらの結果を図1と図2と表2に示す。\n\n【0029】\n\n【表1】\n\n\n\n【0030】\n\n【表2】\n\n\n\n【0031】\n\n表1から明らかなように、実施例A〜実施例Eにおいて製造された耐酸化性HDDR磁石粉末は、何らの表面処理も行っていないHDDR磁石粉末よりも酸化による重量増加率が遥かに少なく、これらの磁石粉末は耐酸化性に優れることがわかった。\n\nまた、図1と図2と表2から明らかなように、実施例A〜実施例Eにおけるボンド磁石は、比較例におけるボンド磁石よりも酸化による重量増加率も磁束劣化率も少なかった。実施例A〜実施例Eにおけるボンド磁石がこのような優れた特性を示すのは、優れた耐酸化性が付与されたHDDR磁石粉末を用いて所定形状に成形されていることに基づくものであるとともに、コンパウンド作製時や所定形状に成形する際の圧縮成形時や成形後においても、磁石粉末の割れなどによる表面損傷が抑制されていることで酸化が効果的に阻止されていることに基づくものである。また、これらのボンド磁石の表面を走査型電子顕微鏡にて観察すれば、その空孔部がボンド磁石の樹脂バインダで固着した顔料粒子で封孔されていることを確認することができる。このような効果もこれらのボンド磁石が耐酸化性に優れることに寄与していると考えられる。\n\n【産業上の利用可能性】\n\n【0032】\n\n本発明は、耐酸化性に優れるとともに高い磁気特性を示す希土類系ボンド磁石を製造するために有用な、耐酸化性希土類系磁石粉末およびその製造方法を提供することができる点において産業上の利用可能性を有する。\n\n【図面の簡単な説明】\n\n【0033】\n\n【図1】実施例における、大気中100℃で500時間加熱する加熱試験による磁束劣化率(不可逆減磁率)の測定結果を示すグラフ。\n\n【図2】同、大気中150℃で100時間加熱する加熱試験における測定結果を示すグラフ。', '【技术领域】\n\n【0001】\n\n本发明涉及一种耐氧化稀土基磁粉末及其制造方法,可用于制备稀土基粘结磁体,其具有高磁性和表现出高磁性。\n\n发明背景\n\n【0002】\n\n通过使用热塑性树脂或热固性树脂作为粘合剂,通过形成预定形状来制造稀土基磁体粉末,例如由ND-Fe-B基磁体粉末表示的R-Fe-B基磁体粉末。由于由于树脂粘合剂,稀土基粘结磁体包含在稀土基烧结磁体中,因此磁特性降低,但与铁氧体磁体相比,磁性特性仍然足够高。此外,它还具有特征不具有稀土基烧结磁体,其可以容易地获得复杂的形状或薄壁磁铁或薄壁磁铁或径向各向异性磁体。因此,稀土基粘结磁铁通常用于诸如主轴电机或步进电机的小型电机中,并且近年来其需求正在增加。\n\n虽然稀有的地球磁体粉末具有高磁性,但存在腐蚀和氧化趋于发生的问题,因为R和Fe占据了大多数组合物。因此,在稀土基粘结磁体的制造中,首先,将磁体粉末的表面与通过溶解或熔化(软化)获得的树脂粘合剂混合,以及称为涂有树脂粘合剂的化合物的粉末颗粒形状在制备原料后,该化合物是注塑成型,压缩成型,挤出成型,并且当树脂粘合剂是热固性树脂时进一步加热使用的树脂粘合剂,通过固化树脂粘合剂来形成树脂粘合剂以形成a通过固化树脂粘合剂来预定的形状。它是制造的。然而,即使是以这种方式制造的稀土基粘结磁体,如果稀土基磁体粉末暴露在表面上,磁体粉末由于存在轻微的酸,碱或水分而导致的磁体粉末呈现。甚至在约100℃的气氛中发生生锈或氧化进展,例如,它可能导致部分掺入后导致磁性的劣化和变化。另外,环氧树脂和尼龙树脂广泛使用的树脂粘合剂具有水和氧的渗透性。因此,在使用这些树脂的稀土基粘结磁体中,不能拒绝透水水和氧气可以腐蚀或氧化稀土基磁体粉末。此外,鉴于稀土基磁体粉末考虑到腐蚀和氧化,当进行注塑时,需要考虑捏合成型时的温度条件,并且当进行压缩成型时,在模塑固化处理之后需要在惰性气体气氛中或真空中进行。\n\n【0003】\n\n为了消除上述问题,例如,在以下专利文献1中,稀土基磁体粉末的表面涂覆有磷酸盐,并且表面涂覆有磷酸涂层的稀土基磁体粉末是a已经提出了制造稀土基粘结磁体的方法,其防止通过模制成预定形状的氧化劣化。\n\n[专利文献1]日本专利申请公开号64-11304\n\n发明的描述\n\n本发明要解决的问题\n\n【0004】\n\n由于上述专利文献1中描述的方法可以以相对较低的成本赋予稀土基磁粉的氧化耐氧化耐氧化耐氧化性,因此可以制造稀土基粘结磁铁,其抗氧化性优异是值得的注意到可以完成的方法。然而,由于磷酸涂层通过与磷酸涂层处理液体成分和磁体粉末表面的磁性粉末组分形成的化学反应,在反应过程中,在反应过程中,磁铁粉末中的磁体粉末或者Fe是组件洗脱,存在通过改变磁体粉末的表面来劣化的问题(约0.1μm深度到表面的表面)劣化。另外,使用这种磁体粉末以预定形状形成的稀土基键磁体具有氧化引起的磁特性变化的问题。推测这种现象,使得由于磁粉的流动性而通过模塑压力破裂,并且易于氧化的颗粒断裂表面暴露。这些问题是从稀土基础债券磁铁所需的高性能的观点来看,应该不能忽略的问题,并且应该尽早解决。\n\n因此,本发明的目的是提供一种耐氧化耐稀土基磁粉末及其制造方法,以产生具有高磁性和抗氧化性的稀土基粘合磁体。\n\n[解决问题的手段]\n\n【0005】\n\n基于上述技术背景制造的本发明的氧化耐氧化稀土磁体粉末如权利要求1所述,平均粒径(长直径)为0.01μm至0.5μm的有机颜料其特征在于,含有主要成分的粘合剂层在表面上。。\n\n魔鬼索赔2描述的抗氧化耐稀土磁粉1在所述氧化耐氧化稀土基磁粉中所述,其特征在于,有机颜料是Indedren系的颜料或酞菁颜料。。\n\n魔鬼索赔3抗氧化耐稀土基磁粉末或者2在所述氧化耐氧化稀土基磁粉末中,稀土基磁粉的平均粒径(主直径)为200μm或更小。\n\n还,4描述的抗氧化耐稀土磁粉3在所述氧化耐氧化稀土基磁体粉末中,稀土基磁体粉末的特征在于它是HDDR磁体粉末。\n\n此外,本发明平均粒径(长直径)为0.01μm至0.5μm的有机颜料制造具有粘合剂层的耐氧化稀土基磁粉末,其具有主要成分作为表面上的主要成分的粘合剂层是5如上所述,稀土基磁粉平均粒径(长直径)为0.01μm至0.5μm的有机颜料混合含含量处理溶液后,通过干燥附着在表面的稀土基磁粉末干燥含颜料的处理液。\n\n还,6描述的制造方法是5在描述的制造方法中,混合稀土基磁粉和含颜料的加工溶液,然后过滤以获取稀土基磁体粉末,其中含颜料的加工液体粘附到表面上。\n\n还,7描述的制造方法是5要么6在所描述的制造方法中,其特征在于,含颜料的处理溶液中的颜料的含量为5重量%至33%(重量)。\n\n还,8描述的制造方法是5要么7在任何上述制造方法中,含颜料的处理液体含有有机分散介质。\n\n此外,本发明的稀土基粘磁体的化合物是9如上所述,其特征在于,根据权利要求1所述的抗氧化耐稀土磁粉和树脂粘合剂。\n\n另外,本发明的稀土基粘结磁体是10如上所述9其特征在于,使用所描述的稀土基粘合磁体化合物形成预定形状。\n\n【发明效果】\n\n【0006】\n\n根据本发明,提供了一种抗氧化耐稀土基磁粉和用于制造稀土基粘结磁体的方法,其显示出高磁性和表现出高磁性。\n\n实施本发明的最佳方式\n\n【0007】\n\n本发明的氧化剂耐稀土基础磁体粉末是例如稀土基磁粉和含颜料的加工溶液,然后通过干燥稀土化制造含颜料的加工溶液 - 基于磁铁粉末附着在表面上。可以。\n\n【0008】\n\n作为制备含颜料的加工液的方法,例如,可以提及将颜料分散在弱碱水中,用氨等将颜料分散到6.5至9.0。将处理液的pH调节至6.5至9.0是为了防止稀土基磁体粉末通过加工液腐蚀。从确保良好的操作性的观点来看,从确保良好处理的观点来看,需要2cP到50 CP。含颜料的加工溶液可以是有机溶剂如乙醇或异丙醇中的分散颜料。\n\n【0009】\n\n作为颜料,可以使用任何有机颜料和无机颜料。作为有机颜料,除了茚满索的颜料和酞菁颜料外,偶氮系统,喹吖啶酮,蒽醌系统,二氧化碱系统,靛蓝系统,硫醚系统,Perinone系统,Perylene,isoindren系,唑类偶氮系统,Diketo吡咯醇可以提及基于颜料等。当使用有机颜料作为颜料时,具有作为表面上的主要成分的具有有机颜料的粘合剂层的稀土基磁体粉末是中等粘弹性,其具有由树脂组成的稀土基粘接磁体的化合物粘合剂。作为构成沉积层的有机颜料赋予施加沉积层的有机颜料,其构成粘合剂层被吸收和释放,从而难以发生磁体粉末的破碎,并且难以发生新的骨折表面。它方便而且,取决于有机颜料的类型,预期可以赋予粘合磁体的高电阻。最重要的是,由于茚满烯颜料和酞菁基颜料具有优异的耐腐蚀性和耐热性,因此可以置于它们是合适的有机颜料。\n\n作为无机颜料,可以提及炭黑,二氧化钛,氧化铁,氧化铬,氧化锌,氧化铝,硫化锌,滑石,云母,碳酸钙等。当无机颜料用作颜料时,含有形成在稀土基磁体粉末的表面上的无机颜料的粘合剂层在磁体粉末中特别优异,因为它在氧气或水蒸气中的不渗透性优异。方便的是,可以赋予抗氧化性。合适的无机颜料包括炭黑。\n\n【0010】\n\n从固定颜料在含有颜料的加工溶液中的颜料均匀分散性的观点来看,颜料的平均粒径理想地是0.01μm至0.5μm。如果平均粒径小于0.01μm,则生产难以在处理液中难以聚集,当平均粒径小于0.5μm时,处理液中的比重大。在那里是可能解决的风险。\n\n【0011】\n\n处理液中颜料的含量优选为5重量%至33重量%。如果含量小于5重量%,则不形成由足够量的颜料组成的粘合剂层,在稀土基磁体粉末的表面上,并且不能将优异的抗氧化性施加到磁体粉末。另一方面,当含量超过33重量%时,可以聚集颜料并在处理液中沉降,并且分散性可能劣化。处理液中的颜料的含量更理想地是10%至30重量%。\n\n【0012】\n\n期望将有机分散介质加入含颜料的加工溶液中。有机分散介质用于抑制处理液中颜料的聚集和沉降。有机分散介质包括阴离子分散体(脂族聚酯羧酸,聚醚聚酯羧酸盐,聚合物聚酯酸多胺盐,高分子量多元羧酸长链胺盐等),非离子分散介质(羧酸盐,如聚氧乙烯烷基醚和脱水山梨糖醇酯磺酸盐和铵盐),可从上述观点来看适用于苯乙烯 - 丙烯酸聚合物,Nikawa等羧酸盐和磺酸盐和水溶性环氧树脂的铵盐和水溶性环氧酯的铵盐。目的,从亲和力的观点和颜料的成本。\n\n【0013】\n\n有机分散介质与处理液的添加量优选为9%至24重量%。如果添加量小于9重量%,则颜料的分散性可以降低,并且当它超过24重量%时,处理液的粘度变得太高,不能不如处理性。\n\n【0014】\n\n耐氧化稀土基磁体粉末,例如,如上所述制备的含颜料的加工溶液,并在混合和搅拌和搅拌和搅拌后,稀土基磁体附着在表面上。粉末可以是过滤掉,然后通过干燥干燥。浸入含有颜料的加工溶液中的稀土基磁粉浸入稀土基磁粉末的时间取决于稀土基磁粉等的量,但大约1至20分钟。当用附着于表面附着的稀土基磁粉末滤出含颜料的处理溶液时,颜料可以更牢固地吸附到磁体粉末的表面上。为了赋予稀土基磁体粉末的抗氧化性,而不会导致磁性劣化,干燥是天然干燥或惰性气体(例如氮气和氩气)和80℃至120℃的真空。热量干燥是可取的。采用热干燥的情况下的干燥时间取决于稀土基磁粉等的量,但通常为20分钟至2小时。当粘附在表面附着的稀土基磁体粉末时,希望预先挤压它并提前干燥。通过在稀土基磁粉中喷射含颜料的加工液,可以进行附着在含颜料的加工液表面的稀土基磁体粉末的获取。\n\n【0015】\n\n如上所述,含有形成在稀土基磁体粉末表面上的颜料的粘合剂层是对磁体粉末的优异的抗氧化性,但是磷酸盐涂层没有基于其中的化学反应形成未形成磁体粉末组分,并且通过以分子间力吸附到磁体粉末的表面,因此在地层过程中,在形成过程中,在处理溶液中提炼溶液,R和Fe洗脱磁体粉末的表面,并且没有问题是磁体粉末的磁性降低。因此,如果使用本发明的抗氧化耐稀土磁体粉末,则可以制造稀土基粘合磁体,其表现出高磁性和抗氧化性。\n\n此外,使用本发明的氧化耐氧化稀土基磁体粉末制造的稀土基粘结磁体不仅是由于抗氧化性的优异,而且是粘结磁体,不仅是由于优异的抗氧化性。在模制时,尽管由于磁体粉末的流动性,模制压力可以通过模制压力破裂,但是可以产生本发明的颗粒抗性表面,但是耐氧化耐氧化稀土磁粉本发明在构成在磁体粉末的表面上形成的沉积层的颜料颗粒用于改善磁体粉末在模制粘合磁体时的流动性,磁体粉末通过模塑压力推出进一步抑制裂化颗粒破裂表面破裂并容易氧化。\n\n另外,作为形成稀土基粘接磁体的方法,将压缩成型方法和压缩成型和轧制成型和轧制成型的成型方法(例如,yamashita,稀土磁铁对小型电动机行业的应用,PP .100-111,第十七届国际研讨会,稀土磁铁及其应用程序,2002年8月18日至22日,美国,美国,纽瓦克,特拉华州,由GC Hadjipanayis和Mjbonder编辑,如果您采用,通常是,通常,制造粘合磁铁表面上存在多个与孔隙\n\n然而,在使用本发明的氧化耐稀土基础磁体粉末制造的稀土基粘结磁体中,构成在磁体粉末表面上形成的沉积层的颜料颗粒被认为是稀土基础使用本发明的耐氧化稀土基磁体粉末制造的粘结磁体也被认为有助于抗氧化性优异。\n\n【0016】\n\n特别地,在专利文献1中描述的磷酸盐涂层处理溶液中使用的稀土基磁体粉末的表面附近的现象特别小,平均粒径(主要直径)小(例如,200μm或更小)磁性粉末的劣化显着对磁体粉末显着。然而,根据本发明,在具有小平均粒径(主直径)的稀土基磁体粉末之后,例如,平均粒径为约80μm至100μm,稀土基磁体合金是在氢气中加热以储存氢气。磁各向异性HDDR的磁特性(氢化 - 歧化 - 解吸重组)磁粉(参见通过脱氢而获得的日本公开No.6-82575)。可以赋予优异的抗氧化性而不会引起降解。此外,通过本身已知的方法预先用酸洗,脱脂和清洁预处理,可以预先处理稀土基磁粉末。\n\n【例子】\n\n【0017】\n\n在下文中,将通过实施例更详细地描述本发明,但是本发明不旨在解释。在以下实施例中,以下实施例由高频溶解使用:Nd12.8原子%,Dy1.0原子%,B6.3原子%,CO14.8原子%,Ga 0.5原子%,Zr 0.09原子%,平衡在1100℃的氩气气氛中产生和退火的Fe铸造24小时,在氩气气氛中粉碎氧气浓度为0.5%或更低,从平均颗粒中的0.15MPa为0.15MPa直径为100μm。氢化热处理在870℃下在氢气压力气氛中进行3小时,然后在850℃下在真空中在850℃下进行脱氢处理后进行冷却并制备的HDDR(1 KPA)氩气流。使用磁粉(平均晶粒尺寸0.4μm)。\n\n【0018】\n\n示例a:\n\n实验1:耐氧化HDDR磁粉的生产\n\n炭黑(平均粒径为0.08μm),其是无机颜料(平均粒径0.08μm),即无机颜料,为15重量%,用氨调节至7.2,pH值和pH值调节至7.2至水性处理溶液(10CC)。\n\n在将30g HDDR磁体粉末浸入50ml处理溶液中并混合并搅拌后,用水流吸气器滤出处理过的侧面粉30秒,然后滤出,然后在100℃真空下滤出。加热并干燥1小时。通过粉碎砂浆中得到的凝聚质量,制备了具有含有炭黑作为表面上的主要成分的粘合剂层的黑氧化剂抗性HDDR磁粉。\n\n以这种方式在150℃下在大气中在150℃下进行加热试验,测量试验前测试后通过氧化的重量增加速率。结果如表1所示。\n\n【0019】\n\n实验2:生产粘合磁铁及其特性\n\n将环氧树脂和酚醛固化剂以100:3的重量比溶于甲基乙基酮中以制备树脂溶液。在实验1和树脂溶液中制造的抗氧化HDDR磁粉之后均匀混合,使树脂液体的重量与耐氧化HDDR磁粉和树脂液体的总重量为3%,甲基乙基酮是常温。通过蒸发蒸发,得到粉末状稀土粘结磁体化合物。所得稀土基粘接磁体的化合物(成型,六六角= 0.96mA / m,Hex = 0.96mA / m,0.6gPa)在150℃(1GPa)的氩气气氛中的1小时内得到的模塑体1小时加热环氧树脂固化环氧树脂,尺寸垂直12.0mm×6.6mm宽×7.4mm,密度为5.9克/厘米3老板\n\n陆地磁铁制造。\n\n在大气中在大气中在150℃下在大气中进行加热试验,在测试之前通过氧​​化测量重量增加速率。另外,在相对于粘合磁体的磁化后,在大气中在大气中在大气中加热试验加热在大气中500小时,在150℃下进行热量测试100小时,并进行测试在测试磁通量劣化速率(不可逆磁化因子)之前测试了对每个热试验的测试。此外,在大气中在150℃下进行加热试验的粘合磁体100小时,测量加热试验恢复后的磁通量劣化速率(永久性退磁率) 。这些结果如图2所示。参照图1和图2. 2和2。\n\n【0020】\n\n示例b:\n\n实验1:耐氧化HDDR磁粉的生产\n\n有机颜料是有机颜料的有机颜料(平均粒径0.06μm),含有15重量%的环氧羧酸盐作为有机分散介质,并用氨调节至7.2以将pH调节至7.2。(制备粘度15cp)。\n\n使用该处理液,制备具有作为主要组分的粘合剂层作为主要成分的粘合剂层,其作为主要成分的粘合剂层。在如此制造的氧化HDDR磁粉上进行类似于实施例A的实验1的加热试验,测量试验测试后通过氧化的重量增益速率。结果如表1所示。\n\n【0021】\n\n实验2:生产粘合磁铁及其特性\n\n使用在实验1中制造的氧化HDDR磁粉的实施例A的实验2相同的方式制造粘合磁体。在以这种方式制造的粘合磁体上执行类似于示例性实验2的各种测试。这些结果如图2所示。参照图1和图2. 2和2。\n\n【0022】\n\n示例c:\n\n实验1:耐氧化HDDR磁粉的生产\n\n含有15重量%的水溶性环氧树脂重量羧酸盐作为有机颜料(平均粒径0.06μm)和有机分散介质的颜料,并用氨调节pH至7.2以将pH调节至7.2。a制备17cC的粘度。\n\n使用该加工液,制备具有含有铜酞菁作为主要成分的粘合剂层的芯染色的耐氧化HDDR磁粉,以与实施例A的实验1相同的方式。在如此制造的氧化HDDR磁粉上进行类似于实施例A的实验1的加热试验,测量试验测试后通过氧化的重量增益速率。结果如表1所示。\n\n【0023】\n\n实验2:生产粘合磁铁及其特性\n\n使用在实验1中制造的氧化HDDR磁粉的实施例A的实验2相同的方式制造粘合磁体。在以这种方式制造的粘合磁体上执行类似于示例性实验2的各种测试。这些结果如图2所示。参照图1和图2. 2和2。\n\n【0024】\n\n示例D:\n\n实验1:耐氧化HDDR磁粉的生产\n\n含有15重量%的丙烯酸类聚合物聚合物分散介质的乙醇处理溶液(粘度30cp),为作为颜料的有机颜料(平均粒径0.06μm)和15重量%的丙烯酸聚合物基聚合物分散介质被制备为有机分散介质。。\n\n使用该处理液,制备具有作为主要组分的粘合剂层作为主要成分的粘合剂层,其作为主要成分的粘合剂层。在如此制造的氧化HDDR磁粉上进行类似于实施例A的实验1的加热试验,测量试验测试后通过氧化的重量增益速率。结果如表1所示。\n\n【0025】\n\n实验2:生产粘合磁铁及其特性\n\n使用在实验1中制造的氧化HDDR磁粉的实施例A的实验2相同的方式制造粘合磁体。在以这种方式制造的粘合磁体上执行类似于示例性实验2的各种测试。这些结果如图2所示。参照图1和图2. 2和2。\n\n【0026】\n\n示例e:\n\n实验1:耐氧化HDDR磁粉的生产\n\n含有15重量%的丙烯酸类聚合物聚合物分散介质(平均粒径为0.08μm)的乙醇处理溶液(粘度28cp),为作为颜料的无机颜料和15重量%的丙烯酸聚合物制备聚合物分散介质。\n\n使用该加工液,制备具有与实施例A的实验1中的具有炭黑的粘合剂层作为组分主要成分的粘合剂层的黑氧化剂抗性HDDR磁粉。在如此制造的氧化HDDR磁粉上进行类似于实施例A的实验1的加热试验,测量试验测试后通过氧化的重量增益速率。结果如表1所示。\n\n【0027】\n\n实验2:生产粘合磁铁及其特性\n\n使用在实验1中制造的氧化HDDR磁粉的实施例A的实验2相同的方式制造粘合磁体。在以这种方式制造的粘合磁体上执行类似于示例性实验2的各种测试。这些结果如图2所示。参照图1和图2. 2和2。\n\n【0028】\n\n比较例子:\n\n在HDDR磁粉中进行类似于实施例A的加热试验,其在没有任何表面处理的HDDR磁体粉末中,测量试验后通过氧化的重量增加速率。结果如表1所示。另外,以与使用没有任何表面处理的HDDR磁粉的实施例A的实验2中的实验2中相同的方式制造粘合磁体。在以这种方式制造的粘合磁体上执行类似于示例性实验2的各种测试。这些结果如图2所示。参照图1和图2. 2和2。\n\n【0029】\n\n【表格1】\n\n\n\n【0030】\n\n[表2]\n\n\n\n【0031】\n\n如表1所示,在实施例A至E E中制造的氧化HDDR磁粉由于氧化而不是未浮现的HDDR磁粉,因此这些磁性粉末在抗氧化性方面具有优异的抗氧化性。\n\n此外,从图1和图1中可以看出。参照图1和图2.如图2和表2所示,实施例A中的粘合磁体在比较例中的粘合磁体和磁通量降解速率的磁化磁体具有更小的重量增加率。实施例A-实施例E中的键合磁体显示出这种优异的特性,其基于使用HDDR磁粉形成预定形状,以施加优异的抗氧化性。与磁铁裂缝引起的表面损坏的情况一起即使在化合物生产或以预定形状时压缩成型后均抑制粉末,抑制了由于磁体粉末的裂缝引起的表面损坏,有效地阻断氧化。它是。另外,如果用扫描电子显微镜观察这些粘合磁体的表面,则可以确认孔用用粘合的磁体树脂粘合剂固定的颜料颗粒密封。还考虑这种效果是有助于这些粘合磁体具有优异的抗氧化性。\n\n【工业可用性】\n\n【0032】\n\n本发明可用于制备稀土基粘结磁体,其具有优异的抗氧化性能,可用于制造氢基粘合磁粉及其制造方法。有可能。\n\n[简要描述;简介]\n\n【0033】\n\n【图1】通过加热试验显示磁通量劣化速率(不可逆阻尼因子)的测量结果的图表在空气中在100℃下加热500小时。\n\n【图2】显示测量结果在加热试验中产生的图表在大气中在150℃下加热100小时。');
INSERT INTO `os_patent_instruction_text` VALUES (13010, 22839, '【技術分野】\n\n【0001】\n\n本発明は、耐酸化性に優れるとともに高い磁気特性を示す希土類系ボンド磁石を製造するために有用な、耐酸化性希土類系磁石粉末およびその製造方法に関する。\n\n【背景技術】\n\n【0002】\n\nNd-Fe-B系磁石粉末に代表されるR-Fe-B系磁石粉末(R:希土類元素)などの希土類系磁石粉末を、バインダとして熱可塑性樹脂や熱硬化性樹脂などを用いて所定形状に成形することで製造される希土類系ボンド磁石は、樹脂バインダを含有しているために希土類系焼結磁石に比較すれば磁気特性が低くなるものの、フェライト磁石などに比べればなお十分に高い磁気特性を有しており、また、複雑形状や薄肉形状の磁石やラジアル異方性磁石を容易に得ることができるといった希土類系焼結磁石にはない特徴を持っている。従って、希土類系ボンド磁石は、特にスピンドルモータやステッピングモータなどの小型モータに多く用いられ、近年、その需要が増加している。\n\n希土類系磁石粉末は高い磁気特性を有するが、RやFeが組成の大半を占めることから腐食や酸化を起しやすいという問題がある。そのため、希土類系ボンド磁石の製造においては、まず、希土類系磁石粉末を、溶解もしくは溶融(軟化)させた樹脂バインダと混合して磁石粉末の表面が樹脂バインダで被覆されたコンパウンドと呼ばれる粉末顆粒状原料を調製した後、このコンパウンドを射出成形や圧縮成形や押出成形し、用いる樹脂バインダが熱硬化性樹脂である場合にはさらに加熱して樹脂バインダを硬化させることで所定形状に成形して製品化される。しかしながら、このようにして製品化された希土類系ボンド磁石であっても、その表面に希土類系磁石粉末が露出していると、わずかな酸やアルカリや水分などの存在によって磁石粉末が腐食して錆が発生したり、100℃程度の大気中でも酸化が進行したりするので、例えば部品組み込み後に磁気特性の劣化やばらつきを招くことがある。また、樹脂バインダとして汎用されているエポキシ樹脂やナイロン樹脂などは水分や酸素の透過性を有する。従って、これらの樹脂を樹脂バインダに用いた希土類系ボンド磁石においては、樹脂を透過した水分や酸素で希土類系磁石粉末が腐食したり酸化したりする可能性があることを否定できない。さらに、希土類系磁石粉末が腐食や酸化を\n\n起しやすいことに鑑みれば、射出成形を行う場合には混練成形時の温度条件に配慮する必要があるし、圧縮成形を行う場合には成形後の硬化処理を不活性ガス雰囲気中や真空中で行う必要がある。\n\n【0003】\n\n以上のような問題を解消すべく、例えば、下記の特許文献1において、希土類系磁石粉末の表面に、無機燐酸化合物被膜(燐を構成成分とする被膜)を形成する方法が提案されている。この方法は、比較的低コストで高効率に希土類系磁石粉末に耐酸化性を付与することができることから、耐酸化性に優れるとともに高い磁気特性を示す希土類系ボンド磁石を製造することができる方法として期待されるものである。しかしながら、その効果は満足できるに足るものではない。\n\n【特許文献1】特開平7-278602号公報\n\n【発明の開示】\n\n【発明が解決しようとする課題】\n\n【0004】\n\nそこで本発明は、耐酸化性に優れるとともに高い磁気特性を示す希土類系ボンド磁石を製造するために有用な、耐酸化性希土類系磁石粉末およびその製造方法を提供することを目的とする。\n\n【課題を解決するための手段】\n\n【0005】\n\n上記の技術背景に基づいてなされた本発明の耐酸化性希土類系磁石粉末は、請求項1記載の通り、希土類系磁石粉末の表面に形成された1層以上の被膜を介して最表面に平均粒径(長径)が0.01μm〜0.5μmである有機顔料を主たる構成成分とする被着層を有してなることを特徴とする。\n\n  また、請求項2記載の耐酸化性希土類系磁石粉末は、請求項1記載の耐酸化性希土類系磁石粉末において、有機顔料がインダンスレン系顔料またはフタロシアニン系顔料であることを特徴とする。\n\n  また、請求項3記載の耐酸化性希土類系磁石粉末は、請求項1または2記載の耐酸化性希土類系磁石粉末において、希土類系磁石粉末の表面に形成された被膜が無機燐酸化合物被膜であることを特徴とする。\n\nまた、請求項4記載の耐酸化性希土類系磁石粉末は、請求項1または2記載の耐酸化性希土類系磁石粉末において、希土類系磁石粉末の表面に形成された被膜が金属被膜であることを特徴とする。\n\nまた、請求項5記載の耐酸化性希土類系磁石粉末は、請求項1乃至4のいずれかに記載の耐酸化性希土類系磁石粉末において、希土類系磁石粉末の平均粒径(長径)が200μm以下であることを特徴とする。\n\nまた、請求項6記載の耐酸化性希土類系磁石粉末は、請求項5記載の耐酸化性希土類系磁石粉末において、希土類系磁石粉末がHDDR磁石粉末であることを特徴とする。\n\nまた、本発明の請求項1記載の耐酸化性希土類系磁石粉末の製造方法は、請求項7記載の通り、表面に1層以上の被膜を形成した希土類系磁石粉末と平均粒径(長径)が0.01μm〜0.5μmである有機顔料含有処理液を混合した後、顔料含有処理液が最表面に付着した希土類系磁石粉末を乾燥することを特徴とする。\n\nまた、請求項8記載の製造方法は、請求項7記載の製造方法において、表面に1層以上の被膜を形成した希土類系磁石粉末と顔料含有処理液を混合した後、濾過を行って顔料含有処理液が最表面に付着した希土類系磁石粉末を取得することを特徴とする。\n\nまた、請求項9記載の製造方法は、請求項7または8記載の製造方法において、顔料含有処理液中における顔料の含有量が5重量%〜33重量%であることを特徴とする。\n\nまた、請求項10記載の製造方法は、請求項7乃至9のいずれかに記載の製造方法において、顔料含有処理液が有機分散媒を含有してなることを特徴とする。\n\nまた、本発明の希土類系ボンド磁石用コンパウンドは、請求項11記載の通り、請求項1記載の耐酸化性希土類系磁石粉末と樹脂バインダとからなることを特徴とする。\n\nまた、本発明の希土類系ボンド磁石は、請求項12記載の通り、請求項11記載の希土類系ボンド磁石用コンパウンドを用いて所定形状に成形されてなることを特徴とする。\n\n【発明の効果】\n\n【0006】\n\n本発明によれば、耐酸化性に優れるとともに高い磁気特性を示す希土類系ボンド磁石を製造するために有用な、耐酸化性希土類系磁石粉末およびその製造方法が提供される。\n\n【発明を実施するための最良の形態】\n\n【0007】\n\n本発明の耐酸化性希土類系磁石粉末は、例えば、表面に1層以上の被膜を形成した希土類系磁石粉末と顔料含有処理液を混合した後、顔料含有処理液が最表面に付着した希土類系磁石粉末を乾燥することにより製造することができる。\n\n【0008】\n\n表面に1層以上の被膜を形成した希土類系磁石粉末としては、表面に耐酸化性被膜である無機燐酸化合物被膜を形成した希土類系磁石粉末などが挙げられる。このような磁石粉末は、上記の特許文献1に記載の方法の他、自体公知の燐酸処理や燐酸塩処理などによっても製造することができる。なお、希土類系磁石粉末の表面に形成する被膜は、無機燐酸化合物被膜に限定されるものではなく、アルミニウム被膜や亜鉛被膜などの金属被膜、ポリイミド被膜などの樹脂被膜といった自体公知の耐酸化性被膜であってもよい。また、複数の被膜からなる積層被膜であってもよい。\n\n【0009】\n\n顔料含有処理液の調製方法としては、例えば、アンモニアなどでpHを6.5〜9.0に調整した弱アルカリ性水に顔料を分散させる方法が挙げられる。処理液のpHを6.5〜9.0に調整するのは、処理液による希土類系磁石粉末の腐食を防止するためである。処理液の粘度は、良好な取扱性を確保するといった観点から、2cP〜50cPが望ましい。なお、顔料含有処理液は、エチルアルコールやイソプロピルアルコールなどの有機溶媒に顔料を分散させたものであってもよい。\n\n【0010】\n\n顔料としては、有機顔料と無機顔料のいずれの顔料も用いることができる。有機顔料としては、インダンスレン系顔料やフタロシアニン系顔料の他、アゾ系、キナクリドン系、アントラキノン系、ジオキサンジン系、インジゴ系、チオインジゴ系、ペリノン系、ペリレン系、イソインドレン系、アゾメチンアゾ系、ジケトピロロピロール系の顔料などが挙げられる。顔料として有機顔料を用いた場合、有機顔料を主たる構成成分とする被着層を最表面に有してなる希土類系磁石粉末は、樹脂バインダとからなる希土類系ボンド磁石用コンパウンドに適度の粘弾性と優れた流動性を付与するとともに、被着層を構成する有機顔料が圧縮成形時に受ける応力を吸収して緩和するので磁石粉末の破砕が起こって新生破面が生成するといったことが起きにくくなる点において都合がよい。また、有機顔料の種類によっては、ボンド磁石に高抵抗性を付与することができることが期待される。中でも、インダンスレン系顔料やフタロシアニン系顔料は、耐食性や耐熱性に優れるので、これらは好適な有機顔料であるといえる。\n\n無機顔料としては、カーボンブラック、二酸化チタン、酸化鉄、酸化クロム、酸化亜鉛、アルミナ、硫化亜鉛、タルク、マイカ、炭酸カルシウムなどが挙げられる。顔料として無機顔料を用いた場合、希土類系磁石粉末の最表面に形成された無機顔料を主たる構成成分とする被着層は、酸素や水蒸気などの非透過性に優れることから、磁石粉末にとりわけ優れた耐酸化性を付与することができる点において都合がよい。好適な無機顔料としては、カーボンブラックが挙げられる。\n\n【0011】\n\n顔料の平均粒径(長径)は、顔料含有処理液中における顔料の均一分散性を確保するといった観点から、0.01μm〜0.5μmが望ましい。平均粒径が0.01μm未満であると、その製造が困難であるとともに処理液中で凝集しやすくなって取扱性に劣る一方、平均粒径が0.5μmを超えると、処理液中における比重が大きくなってしまって沈降\n\nしてしまう恐れがある。\n\n【0012】\n\n処理液中における顔料の含有量は、5重量%〜33重量%が望ましい。含有量が5重量%未満であると、十分な量の顔料からなる被着層が希土類系磁石粉末の最表面に形成されず、優れた耐酸化性を磁石粉末に付与することができなくなる恐れがある一方、含有量が33重量%を超えると、処理液中で顔料が凝集や沈降してしまい、その分散性が悪化する恐れがあるからである。なお、処理液中における顔料の含有量は、より望ましくは10重量%〜30重量%である。\n\n【0013】\n\n顔料含有処理液には有機分散媒を添加することが望ましい。有機分散媒は、処理液中での顔料の凝集や沈降を抑制する目的で使用されるものである。有機分散媒としては、アニオン性分散媒(脂肪族系多価カルボン酸、ポリエーテルポリエステルカルボン酸塩、高分子ポリエステル酸ポリアミン塩、高分子量ポリカルボン酸長鎖アミン塩など)、非イオン性分散媒(ポリオキシエチレンアルキルエーテルやソルビタンエステルなどのカルボン酸塩やスルフォン酸塩やアンモニウム塩など)、高分子分散媒(水溶性エポキシのカルボン酸塩やスルフォン酸塩やアンモニウム塩など、スチレン-アクリル酸共重合物、ニカワなど)が、上記の目的の観点から、また、顔料との親和性やコストの観点などから好適に用いられる。\n\n【0014】\n\n処理液中への有機分散媒の添加量は、9重量%〜24重量%が望ましい。添加量が9重量%未満であると、顔料の分散性が低下する恐れがある一方、24重量%を超えると、処理液の粘性が高くなりすぎて取扱性に劣る恐れがあるからである。\n\n【0015】\n\n本発明の耐酸化性希土類系磁石粉末は、例えば、以上のようにして調製された顔料含有処理液に、表面に1層以上の被膜を形成した希土類系磁石粉末を浸漬して混合攪拌した後、顔料含有処理液が最表面に付着した希土類系磁石粉末を濾取してからこれを乾燥して製造することができる。表面に1層以上の被膜を形成した希土類系磁石粉末を顔料含有処理液に浸漬して混合攪拌する時間は、磁石粉末量などにも依存するが、概ね1分〜20分である。顔料含有処理液が最表面に付着した希土類系磁石粉末を濾取する際、減圧濾過や加圧濾過を行えば、被膜の表面に顔料をより強固に吸着せしめることができる。磁気特性の劣化を招くことなく希土類系磁石粉末に耐酸化性を付与するためには、乾燥は、自然乾燥または不活性ガス(窒素ガスやアルゴンガスなど)雰囲気中や真空中80℃〜120℃加熱乾燥が望ましい。加熱乾燥を採用する場合の乾燥時間は、磁石粉末量などにも依存するが、概ね20分〜2時間である。濾取した顔料含有処理液が最表面に付着した希土類系磁石粉末が凝集塊となっている場合には予め解砕してから乾燥することが望ましい。なお、顔料含有処理液が最表面に付着した希土類系磁石粉末の取得は、表面に1層以上の被膜を形成した希土類系磁石粉末に顔料含有処理液を噴霧することで行ってもよい。\n\n【0016】\n\n以上のようにして希土類系磁石粉末の最表面に形成された顔料を主たる構成成分とする被着層は、ナノメートルオーダーの顔料微粒子が分子間力で被膜の表面に吸着して形成されたものであり、その下層に形成された被膜の耐酸化性作用が十分でない場合であっても、その耐酸化性作用を効果的に補填や増強する。従って、本発明の耐酸化性希土類系磁石粉末を用いれば、耐酸化性に優れるとともに高い磁気特性を示す希土類系ボンド磁石を製造することができる。\n\nさらに、本発明の耐酸化性希土類系磁石粉末を用いて製造された希土類系ボンド磁石が耐酸化性に優れるのは、磁石粉末が耐酸化性に優れることによるだけでなく、通常、ボンド磁石の成形時においては、磁石粉末の流れ性不足に起因して成形圧力により磁石粉末が割れて酸化しやすい粒子破面が生じたりすることがあるが、本発明の耐酸化性希土類系磁石粉末を用いた場合には、磁石粉末の最表面に形成された被着層を構成する顔料粒子が、ボンド磁石の成形時における磁石粉末の流れ性を改善する潤滑作用を発揮することで、成\n\n形圧力により磁石粉末が割れて酸化しやすい粒子破面が生じたりすることが抑制されていることにもよると推測される。\n\n【0017】\n\n本発明の耐酸化性希土類系磁石粉末は、自体公知の方法によって樹脂バインダとともに希土類系ボンド磁石用コンパウンドとされる。樹脂バインダとしては、エポキシ樹脂、フェノール樹脂、メラミン樹脂などの熱硬化性樹脂、ポリアミド(ナイロン66やナイロン6やナイロン12など)、ポリエチレン、ポリプロピレン、ポリ塩化ビニル、ポリエステル、ポリフェニレンサルファイドなどの熱可塑性樹脂、ゴムやエストラマ、これらの変性体や共重合体や混合物(例えば、熱硬化性樹脂(エポキシ樹脂など)に熱可塑性樹脂の粉末を分散させたもの:F.Yamashita, Applications of Rare-Earth Magnets to the Small motor industry, pp.100-111, Proceedings of the seventeenth international workshop, Rare Earth Magnets and Their Applications, August 18-22, 2002, Newark, Delaware, USA, Edited by G.C. Hadjipanayis and M.J.Bonder, Rinton Pressを参照)などを用いることができる。コンパウンドにおける耐酸化性希土類系磁石粉末に対する樹脂バインダの配合割合は、3重量%を上限とすることが望ましい。コンパウンドを得る際には、カップリング剤や潤滑剤や硬化剤などの添加剤を通常用いられる添加量にて添加してもよい。\n\n【0018】\n\n本発明の耐酸化性希土類系磁石粉末を用いた希土類系ボンド磁石は、以上のようにして調製された希土類系ボンド磁石用コンパウンドを圧縮成形や射出成形や押出成形などにより所定形状に成形して製品化される。例えば、圧縮成形を行う場合、圧縮成形方法は、一般的に行われる圧縮成形方法の他、圧縮成形と圧延成形を組み合わせた成形方法(例えば、前出のF.Yamashita, Applications of Rare-Earth Magnets to the Small motor industry, pp.100-111, Proceedings of the seventeenth international workshop, Rare Earth Magnets and Their Applications, August 18-22, 2002, Newark, Delaware, USA, Edited by G.C. Hadjipanayis and M.J.Bonder, Rinton Pressを参照)などを含む。\n\n【0019】\n\n希土類系ボンド磁石用コンパウンドを圧縮成形することにより、磁石粉末の最表面に形成された被着層を構成する顔料が磁石粉末の粒子と粒子の間に押しやられて充填されることで、ボンド磁石の表面や内部における空孔部の発生を軽減することができる。コンパウンドの圧縮成形は、0.1GPa〜1GPaの圧力で加圧して行うことが望ましく、0.3GPa〜0.6GPaの圧力で加圧して行うことがより望ましい。圧力が0.1GPa未満であると、圧力が小さすぎてボンド磁石の高密度化を十分に図ることができないことに起因して空孔部の発生を効果的に軽減することができない恐れがある一方、圧力が1GPaを越えると、圧力が大きすぎて磁石粉末の破砕が起って新生破面が生成したりする恐れがあるからである。成形温度は、樹脂バインダの種類にも依存するが、通常、室温(20℃)〜120℃である。磁石粉末の粒子相互間や磁石粉末の粒子と樹脂バインダとの間の摩擦を低減させて高密度なボンド磁石とするため、また、磁石粉末の最表面に形成された被着層を構成する顔料の流動性を高めて顔料が磁石粉末の粒子と粒子の間に円滑に押しやられて充填されやすくするためには、成形温度は80℃〜100℃とすることが望ましい。\n\n【0020】\n\n樹脂バインダとして熱硬化性樹脂を用いた場合、最後に、得られた成形体を加熱硬化することで希土類系ボンド磁石とする。成形体の加熱硬化は常法に従って行えばよく、例えば、不活性ガス(窒素ガスやアルゴンガスなど)雰囲気中や真空中140℃〜200℃にて1時間〜5時間の条件で行えばよい。\n\n【0021】\n\n本発明によれば、平均粒径(長径)が小さい希土類系磁石粉末、例えば、平均粒径が80μm〜100μm程度の、希土類系磁石合金を水素中で加熱して水素を吸蔵させた後、脱水素処理し、次いで冷却することによって得られる磁気的異方性のHDDR(Hydrogen\n\nation-Disproportionation-Desorption-Recombination)磁石粉末(特公平6-82575号公報参照)などに対しても、磁気特性の劣化を引き起すことなく優れた耐酸化性を付与することができる。なお、希土類系磁石粉末は、予め、自体公知の方法によって酸洗や脱脂や洗浄などの前処理が施されたものであってもよい。\n\n【実施例】\n\n【0022】\n\n以下、本発明を実施例によってさらに詳細に説明するが、本発明はこれに限定して解釈されるものではない。なお、以下の実施例は、高周波溶解によって組成:Nd12.8原子%,Dy1.0原子%,B6.3原子%,Co14.8原子%,Ga0.5原子%,Zr0.09原子%,残部Feの鋳隗を作製し、アルゴンガス雰囲気中で1100℃×24時間焼鈍したものを酸素濃度0.5%以下のアルゴンガス雰囲気中で粉砕して平均粒径100μmの粉砕粉としてからこれを0.15MPaの水素ガス加圧雰囲気中で870℃×3時間の水素化熱処理を行い、その後、減圧(1kPa)アルゴンガス流気中で850℃×1時間の脱水素処理を行ってから冷却して製造したHDDR磁石粉末(平均結晶粒径0.4μm)を用いて行った。\n\n【0023】\n\n実施例A:\n\n実験1:耐酸化性HDDR磁石粉末の製造\n\n燐酸濃度が0.09mol/Lのエチルアルコール溶液300mLにHDDR磁石粉末100gを室温で3分間浸漬して混合攪拌した後、処理済磁石粉末を水流アスピレータを用いて30秒間減圧濾過を行って濾取し、その後、真空中120℃で30分間加熱乾燥することでHDDR磁石粉末の表面に無機燐酸化合物被膜を形成した。\n\n顔料として有機顔料である銅フタロシアニン(平均粒径0.06μm)を17重量%と有機分散媒として水溶性エポキシのカルボン酸塩を15重量%含み、アンモニアでpHを7.2に調整して水性処理液(粘度17cP)を調製した。\n\n表面に無機燐酸化合物被膜を形成したHDDR磁石粉末50gを50mlの処理液に室温で3分間浸漬して混合攪拌した後、処理済磁石粉末を水流アスピレータを用いて30秒間減圧濾過を行って濾取し、その後、真空中100℃で1時間加熱乾燥した。得られた凝集塊を乳鉢で解砕することで、無機燐酸化合物被膜を介して銅フタロシアニンを主たる構成成分とする被着層を最表面に有してなる藍色の耐酸化性HDDR磁石粉末を製造した。\n\nこのようにして製造された耐酸化性HDDR磁石粉末1gに対し、大気中150℃で100時間加熱する加熱試験を行い、試験前に対する試験後における酸化による重量増加率を測定した。結果を表1に示す。\n\n【0024】\n\n実験2:ボンド磁石の製造とその特性\n\nエポキシ樹脂とフェノール系硬化剤を重量比率で100:3の割合でメチルエチルケトンに溶解して樹脂液を調製した。実験1で製造した耐酸化性HDDR磁石粉末と樹脂液を、耐酸化性HDDR磁石粉末と樹脂液の合計重量に対する樹脂液の重量の比率が3%となるように均一混合した後、メチルエチルケトンを常温で蒸発させて粉末顆粒状の希土類系ボンド磁石用コンパウンドを得た。得られた希土類系ボンド磁石用コンパウンドを、圧縮成形(100℃温間磁場中成形、Hex=0.96MA/m、0.6GPa)し、得られた成形体を150℃のアルゴンガス雰囲気中で1時間加熱してエポキシ樹脂を硬化させて、寸法が縦12.0mm×横7.6mm×高さ7.4mmで密度が5.9g/cm3のボンド磁石を製造した。\n\nこうして製造されたボンド磁石に対し、大気中150℃で100時間加熱する加熱試験を行い、試験前に対する試験後における酸化による重量増加率を測定した。また、ボンド磁石に対して着磁を行った後、大気中100℃で500時間加熱する加熱試験と大気中150℃で100時間加熱する加熱試験を行い、それぞれの加熱試験について、試験前に対する試験後における磁束劣化率(不可逆減磁率)を測定した。さらに、大気中150℃で100時間加熱する加熱試験を行ったボンド磁石については再着磁を行い、加熱試験前に\n\n対する再着磁後における磁束劣化率(永久減磁率)を測定した。これらの結果を図1と図2と表2に示す。\n\n【0025】\n\n実施例B:\n\n実験1:耐酸化性HDDR磁石粉末の製造\n\n顔料として有機顔料であるインダンスレン(平均粒径0.06μm)を17重量%と有機分散媒としてアクリル重合物系高分子分散媒を15重量%含んだエチルアルコール処理液(粘度30cP)を調製した。\n\nこの処理液を用いて実施例Aの実験1と同様にして無機燐酸化合物被膜を介してインダンスレンを主たる構成成分とする被着層を最表面に有してなる藍色の耐酸化性HDDR磁石粉末を製造した。こうして製造された耐酸化性HDDR磁石粉末に対し、実施例Aの実験1と同様の加熱試験を行い、試験前に対する試験後における酸化による重量増加率を測定した。結果を表1に示す。\n\n【0026】\n\n実験2:ボンド磁石の製造とその特性\n\n実験1で製造した耐酸化性HDDR磁石粉末を用いて実施例Aの実験2と同様にしてボンド磁石を製造した。こうして製造されたボンド磁石に対し、実施例Aの実験2と同様の各種試験を行った。これらの結果を図1と図2と表2に示す。\n\n【0027】\n\n実施例C:\n\n実験1:耐酸化性HDDR磁石粉末の製造\n\n燐酸二水素ナトリウム濃度が0.14mol/Lの水溶液300mLにHDDR磁石粉末100gを室温で3分間浸漬して混合攪拌した後、処理済磁石粉末を水流アスピレータを用いて30秒間減圧濾過を行って濾取し、その後、真空中120℃で30分間加熱乾燥することでHDDR磁石粉末の表面に無機燐酸化合物被膜を形成した。\n\n実施例Aの実験1で用いた処理液と同様の処理液を用いて実施例Aの実験1と同様にして無機燐酸化合物被膜を介して銅フタロシアニンを主たる構成成分とする被着層を最表面に有してなる藍色の耐酸化性HDDR磁石粉末を製造した。こうして製造された耐酸化性HDDR磁石粉末に対し、実施例Aの実験1と同様の加熱試験を行い、試験前に対する試験後における酸化による重量増加率を測定した。結果を表1に示す。\n\n【0028】\n\n実験2:ボンド磁石の製造とその特性\n\n実験1で製造した耐酸化性HDDR磁石粉末を用いて実施例Aの実験2と同様にしてボンド磁石を製造した。こうして製造されたボンド磁石に対し、実施例Aの実験2と同様の各種試験を行った。これらの結果を図1と図2と表2に示す。\n\n【0029】\n\n実施例D:\n\n実験1:耐酸化性HDDR磁石粉末の製造\n\n実施例Bの実験1で用いた処理液と同様の処理液を用いて実施例Cの実験1と同様にして無機燐酸化合物被膜を介してインダンスレンを主たる構成成分とする被着層を最表面に有してなる藍色の耐酸化性HDDR磁石粉末を製造した。こうして製造された耐酸化性HDDR磁石粉末に対し、実施例Aの実験1と同様の加熱試験を行い、試験前に対する試験後における酸化による重量増加率を測定した。結果を表1に示す。\n\n【0030】\n\n実験2:ボンド磁石の製造とその特性\n\n実験1で製造した耐酸化性HDDR磁石粉末を用いて実施例Aの実験2と同様にしてボンド磁石を製造した。こうして製造されたボンド磁石に対し、実施例Aの実験2と同様の各種試験を行った。これらの結果を図1と図2と表2に示す。\n\n【0031】\n\n実施例E:\n\n実験1:耐酸化性HDDR磁石粉末の製造\n\n自体公知の真空蒸着法によってHDDR磁石粉末の表面に膜厚0.3μmのAl被膜を形成した。\n\n実施例Aの実験1で用いた処理液と同様の処理液を用いて実施例Aの実験1と同様にしてAl被膜を介して銅フタロシアニンを主たる構成成分とする被着層を最表面に有してなる藍色の耐酸化性HDDR磁石粉末を製造した。こうして製造された耐酸化性HDDR磁石粉末に対し、実施例Aの実験1と同様の加熱試験を行い、試験前に対する試験後における酸化による重量増加率を測定した。結果を表1に示す。\n\n【0032】\n\n実験2:ボンド磁石の製造とその特性\n\n実験1で製造した耐酸化性HDDR磁石粉末を用いて実施例Aの実験2と同様にしてボンド磁石を製造した。こうして製造されたボンド磁石に対し、実施例Aの実験2と同様の各種試験を行った。これらの結果を図1と図2と表2に示す。\n\n【0033】\n\n比較例1:\n\n何らの表面処理も行っていないHDDR磁石粉末に対し、実施例Aの実験1と同様の加熱試験を行い、試験前に対する試験後における酸化による重量増加率を測定した。結果を表1に示す。また、何らの表面処理も行っていないHDDR磁石粉末を用いて実施例Aの実験2と同様にしてボンド磁石を製造した。こうして製造されたボンド磁石に対し、実施例Aの実験2と同様の各種試験を行った。これらの結果を図1と図2と表2に示す。\n\n【0034】\n\n比較例2:\n\n実施例Aの実験1で製造した表面に無機燐酸化合物被膜を形成したHDDR磁石粉末に対し、実施例Aの実験1と同様の加熱試験を行い、試験前に対する試験後における酸化による重量増加率を測定した。結果を表1に示す。また、このHDDR磁石粉末を用いて実施例Aの実験2と同様にしてボンド磁石を製造した。こうして製造されたボンド磁石に対し、実施例Aの実験2と同様の各種試験を行った。これらの結果を図1と図2と表2に示す。\n\n【0035】\n\n比較例3:\n\n実施例Cの実験1で製造した表面に無機燐酸化合物被膜を形成したHDDR磁石粉末に対し、実施例Aの実験1と同様の加熱試験を行い、試験前に対する試験後における酸化による重量増加率を測定した。結果を表1に示す。また、このHDDR磁石粉末を用いて実施例Aの実験2と同様にしてボンド磁石を製造した。こうして製造されたボンド磁石に対し、実施例Aの実験2と同様の各種試験を行った。これらの結果を図1と図2と表2に示す。\n\n【0036】\n\n比較例4:\n\n実施例Eの実験1で製造した表面にAl被膜を形成したHDDR磁石粉末に対し、実施例Aの実験1と同様の加熱試験を行い、試験前に対する試験後における酸化による重量増加率を測定した。結果を表1に示す。また、このHDDR磁石粉末を用いて実施例Aの実験2と同様にしてボンド磁石を製造した。こうして製造されたボンド磁石に対し、実施例Aの実験2と同様の各種試験を行った。これらの結果を図1と図2と表2に示す。\n\n【0037】\n\n【表1】\n\n\n\n【0038】\n\n【表2】\n\n\n\n【0039】\n\n表1から明らかなように、実施例A〜実施例Eにおいて製造された耐酸化性HDDR磁石粉末、比較例2〜比較例4において製造された表面被覆HDDR磁石粉末は、比較例1の何らの表面処理も行っていないHDDR磁石粉末よりも酸化による重量増加率が遥かに少なく、これらの磁石粉末は耐酸化性に優れることがわかった。\n\n【0040】\n\nしかしながら、図1と図2と表2から明らかなように、比較例2〜比較例4におけるボンド磁石は、比較例1におけるボンド磁石と同程度に酸化による重量増加率と磁束劣化率が顕著であった。一方、実施例A〜実施例Eにおけるボンド磁石は、比較例1におけるボンド磁石よりも酸化による重量増加率も磁束劣化率も少なかった。実施例A〜実施例Eにおけるボンド磁石がこのような優れた特性を示すのは、優れた耐酸化性が付与されたHDDR磁石粉末を用いて所定形状に成形されていることに基づくものであるとともに、比較例2〜比較例4におけるボンド磁石と異なり、コンパウンド作製時や所定形状に成形する際の圧縮成形時や成形後においても、磁石粉末の割れなどによる表面損傷が抑制されてい\n\nることで酸化が効果的に阻止されていることに基づくものである。また、実施例A〜実施例Eにおけるボンド磁石の表面を走査型電子顕微鏡にて観察すれば、その空孔部がボンド磁石の樹脂バインダで固着した顔料粒子で封孔されていることを確認することができる。このような効果もこれらのボンド磁石が耐酸化性に優れることに寄与していると考えられる。\n\n【産業上の利用可能性】\n\n【0041】\n\n本発明は、耐酸化性に優れるとともに高い磁気特性を示す希土類系ボンド磁石を製造するために有用な、耐酸化性希土類系磁石粉末およびその製造方法を提供することができる点において産業上の利用可能性を有する。\n\n【図面の簡単な説明】\n\n【0042】\n\n【図1】実施例における、大気中100℃で500時間加熱する加熱試験による磁束劣化率(不可逆減磁率)の測定結果を示すグラフ。\n\n【図2】同、大気中150℃で100時間加熱する加熱試験における測定結果を示すグラフ。', '【技术领域】\n\n【0001】\n\n本发明涉及一种耐氧化稀土基磁粉末及其制造方法,可用于制备稀土基粘结磁体,其具有高磁性和表现出高磁性。\n\n发明背景\n\n【0002】\n\n一种稀土基磁体粉末,例如由Nd-Fe-B基磁粉,使用热塑性树脂或热固性树脂的预定形状表示的R-Fe-B基磁粉(R:稀土元素)。作为粘合剂。通过模塑制造的稀土基粘结磁体是磁性的低于稀土烧结磁体,因为它含有树脂粘合剂,但是磁性特性低于铁氧体磁体等的磁性特性。它具有具有特性的特征,并且不是稀土的烧结磁体,其可以容易地获得复杂的形状,薄壁磁铁或径向各向异性磁体。因此,稀土基粘结磁铁通常用于诸如主轴电机或步进电机的小型电机中,并且近年来其需求正在增加。\n\n虽然稀有的地球磁体粉末具有高磁性,但存在腐蚀和氧化趋于发生的问题,因为R和Fe占据了大多数组合物。因此,在稀土基粘结磁体的制造中,首先,将磁体粉末的表面与通过溶解或熔化(软化)获得的树脂粘合剂混合,以及称为涂有树脂粘合剂的化合物的粉末颗粒形状在制备原料后,该化合物是注塑成型,压缩成型,挤出成型,并且当树脂粘合剂是热固性树脂时进一步加热使用的树脂粘合剂,通过固化树脂粘合剂来形成树脂粘合剂以形成a通过固化树脂粘合剂来预定的形状。它是制造的。然而,即使是以这种方式制造的稀土基粘结磁体,如果稀土基磁体粉末暴露在表面上,磁体粉末由于存在轻微的酸,碱或水分而导致的磁体粉末呈现。甚至在约100℃的气氛中发生生锈或氧化进展,例如,它可能导致部分掺入后导致磁性的劣化和变化。另外,环氧树脂和尼龙树脂广泛使用的树脂粘合剂具有水和氧的渗透性。因此,在使用这些树脂的稀土基粘结磁体中,不能拒绝透水水和氧气可以腐蚀或氧化稀土基磁体粉末。此外,稀土基础磁粉腐蚀和氧化\n\n鉴于易于唤醒,在进行注射成型的情况下,需要考虑捏合时的温度条件,并且当进行压缩成型时,模塑后的固化处理是惰性气体气氛或真空。需要做。\n\n【0003】\n\n为了消除上述问题,例如,在下面的专利文献1中,在稀土基磁粉的表面上提出了形成无机磷酸涂膜(作为组分的含磷磷的薄膜)。该方法可以赋予耐氧化耐氧化耐稀土磁粉,具有相对较低的成本,因此可以制造稀土基粘合磁体,显示出高磁性以及预期的高磁性。然而,效果不足以令人满意。\n\n[专利文献1]日本专利申请公开No.7-278602\n\n发明的描述\n\n本发明要解决的问题\n\n【0004】\n\n因此,本发明的目的是提供一种耐氧化耐稀土基磁粉末及其制造方法,以产生具有高磁性和抗氧化性的稀土基粘合磁体。\n\n[解决问题的手段]\n\n【0005】\n\n如权利要求1所述的本发明的氧化耐氧化稀土基磁体粉末如权利要求1所述,以及在稀土基磁粉的表面上形成的一个或多个膜的最外表面平均粒径(长直径)为0.01μm至0.5μm的有机颜料其特征在于它包括含有主要成分的粘合剂层。\n\n魔鬼索赔2描述的抗氧化耐稀土磁粉1在所述氧化耐氧化稀土基磁粉中所述,其特征在于,有机颜料是Indedren系的颜料或酞菁颜料。。\n\n魔鬼索赔3抗氧化耐稀土基磁粉末或者2在所描述的氧化耐氧化稀土基磁体粉末中,形成在稀土基磁体粉末的表面上的涂层是无机磷酸膜。\n\n还,4抗氧化耐稀土基磁粉末或者2在所述氧化耐氧化稀土基磁体粉末中,在稀土基磁粉末的表面上形成的膜是金属膜。\n\n还,5抗氧化耐稀土基磁粉末4根据任何一个稀土基磁粉末的抗氧化耐稀土磁体粉末的特征在于稀土基磁粉的平均粒径(主直径)为200μm或更小。\n\n还,6描述的抗氧化耐稀土磁粉5在所述氧化耐氧化稀土基磁体粉末中,稀土基磁体粉末的特征在于它是HDDR磁体粉末。\n\n在根据本发明的权利要求1的制造耐氧化稀土磁粉的方法中,7如上所述,稀土基磁体粉末在表面上具有一个或多个涂层平均粒径(长直径)为0.01μm至0.5μm的有机颜料混合含有的处理溶液后,含颜料的加工溶液的特征在于,将附着在最外表面的稀土基磁体粉末干燥。\n\n还,8描述的制造方法是7在所描述的制造方法中,在将稀土基磁粉和表面上混合在表面上,过滤含颜料的加工溶液,并将含颜料的处理溶液粘附在最外表面上。它是特点是\n\n还,9描述的制造方法是7要么8在所描述的制造方法中,其特征在于,含颜料的处理溶液中的颜料的含量为5重量%至33%(重量)。\n\n还,10描述的制造方法是7要么9在任何上述制造方法中,含颜料的处理液体含有有机分散介质。\n\n此外,本发明的稀土基粘磁体的化合物是11如上所述,其特征在于,根据权利要求1所述的抗氧化耐稀土磁粉和树脂粘合剂。\n\n另外,本发明的稀土基粘结磁体是12如上所述11其特征在于,使用所描述的稀土基粘合磁体化合物形成预定形状。\n\n【发明效果】\n\n【0006】\n\n根据本发明,提供了一种抗氧化耐稀土基磁粉和用于制造稀土基粘结磁体的方法,其显示出高磁性和表现出高磁性。\n\n实施本发明的最佳方式\n\n【0007】\n\n例如,本发明的氧化剂耐稀土基磁体粉末是例如在表面上形成的稀土基磁体粉末,并在混合含颜料的加工后连接到最外表面上的稀土处理溶液液体。它可以通过干燥磁体粉末来制造。\n\n【0008】\n\n在表面上具有一个或多个膜的稀土基磁性粉末的实例包括稀土基磁体粉末,其形成在表面上的抗氧化膜的无机磷酸膜。除了上述专利文献1中描述的方法之外,这种磁性粉末还可以通过磷酸处理,磷酸盐处理等制造。在稀土基磁体粉末的表面上形成的涂层不限于无机磷酸盐涂层,并且是已知的氧化抗性涂层,例如树脂涂层,例如铝涂层或锌膜,以及树脂涂层作为聚酰亚胺涂层。可能是。另外,它可以是由多个膜形成的层叠涂层。\n\n【0009】\n\n作为制备含颜料的加工液的方法,例如,可以提及将颜料分散在弱碱水中,用氨等将颜料分散到6.5至9.0。将处理液的pH调节至6.5至9.0是为了防止稀土基磁体粉末通过加工液腐蚀。从确保良好的操作性的观点来看,从确保良好处理的观点来看,需要2cP到50 CP。含颜料的加工溶液可以是有机溶剂如乙醇或异丙醇中的分散颜料。\n\n【0010】\n\n作为颜料,可以使用任何有机颜料和无机颜料。作为有机颜料,除了茚满索的颜料和酞菁颜料外,偶氮系统,喹吖啶酮,蒽醌系统,二氧化碱系统,靛蓝系统,硫醚系统,Perinone系统,Perylene,isoindren系,唑类偶氮系统,Diketo吡咯醇可以提及基于颜料等。当使用有机颜料作为颜料时,稀土基磁体粉末具有作为组分主要组分的有机颜料的粘合剂层是用于由树脂粘合剂组成的稀土基粘合磁体的中等粘弹性。赋予优异的流动性,并且由于构成粘合剂层的有机颜料吸收并缓解在压缩成型时接收的应力,因此不太可能发生磁粉碎,并且产生新的裂缝表面。它是积分方便。而且,取决于有机颜料的类型,预期可以赋予粘合磁体的高电阻。最重要的是,由于茚满烯颜料和酞菁基颜料具有优异的耐腐蚀性和耐热性,因此可以置于它们是合适的有机颜料。\n\n作为无机颜料,可以提及炭黑,二氧化钛,氧化铁,氧化铬,氧化锌,氧化铝,硫化锌,滑石,云母,碳酸钙等。当无机颜料用作颜料时,含有在稀土基磁体粉末的最外表面上形成的无机颜料的粘合剂层在磁体粉末中特别优异,因为它在氧气和水蒸气中的不渗透性优异。方便的是,可以赋予优异的抗氧化性。合适的无机颜料包括炭黑。\n\n【0011】\n\n从固定颜料在含有颜料的加工溶液中的颜料均匀分散性的观点来看,颜料的平均粒径理想地是0.01μm至0.5μm。如果平均粒径小于0.01μm,则生产难以在处理液中容易聚集处理液,并且当平均粒径小于0.5μm时,处理液中的比重很大。它已经沉淀了\n\n有一种风险\n\n【0012】\n\n处理液中颜料的含量优选为5重量%至33重量%。如果含量小于5重量%,则在稀土基磁粉末的最外表面上不形成由足够量的颜料组成的沉积层,并且优异的抗氧化性不能施加到磁体粉末。另一方面,当含量超过33重量%时,可以聚集颜料并在处理液中沉降,并且分散性可能劣化。处理液中的颜料的含量更理想地是10%至30重量%。\n\n【0013】\n\n期望将有机分散介质加入含颜料的加工溶液中。有机分散介质用于抑制处理液中颜料的聚集和沉降。有机分散介质包括阴离子分散体(脂族聚酯羧酸,聚醚聚酯羧酸盐,聚合物聚酯酸多胺盐,高分子量多元羧酸长链胺盐等),非离子分散介质(羧酸盐,如聚氧乙烯烷基醚和脱水山梨糖醇酯磺酸盐和铵盐),可从上述观点来看适用于苯乙烯 - 丙烯酸聚合物,Nikawa等羧酸盐和磺酸盐和水溶性环氧树脂的铵盐和水溶性环氧酯的铵盐。目的,从亲和力的观点和颜料的成本。\n\n【0014】\n\n有机分散介质与处理液的添加量优选为9%至24重量%。如果添加量小于9重量%,则颜料的分散性可以降低,并且当它超过24重量%时,处理液的粘度变得太高,不能不如处理性。\n\n【0015】\n\n本发明的氧化耐稀土基磁体粉末例如如上所述制备的含颜料的加工溶液,并用稀土基磁粉混合和搅拌,其中形成一个或多个膜在表面上。过滤收集附着到最外表面的稀土基磁体粉末,然后通过干燥干燥。将含有颜料的加工溶液中的混合和搅拌的时间浸入含颜料的加工溶液中并在表面上混合并搅拌取决于磁体粉末的量,但大约1分钟至20分钟。当用附着于最外表面的稀土基磁粉末滤出含颜料的处理溶液时,可以更粘附在薄膜表面上的真空过滤和压力过滤。为了赋予稀土基磁体粉末的抗氧化性,而不会导致磁性劣化,干燥是天然干燥或惰性气体(例如氮气和氩气)和80℃至120℃的真空。热量干燥是可取的。采用热干燥的情况下的干燥时间取决于磁体粉末的量,但大约为20分钟至2小时。当粘附到最外表面的稀土基磁体粉末是粘性质量时,希望预先干燥和干燥。通过将含有颜料的处理的处理溶液喷涂在稀土基磁粉上,可以进行附着在含颜料的加工液的最外表面上的稀土基磁体粉末的获取可以进行,其中形成一个或多个薄膜表面。\n\n【0016】\n\n如上所述,通过用分子间力吸附到稀土基磁体粉末的最外表面上的沉积层形成在稀土基磁体粉末的最外表面上。因此,即使氧化也是如此,即使氧化在下层形成的涂层的电阻不足,氧化阻力效应有效地补偿和增强。因此,如果使用本发明的抗氧化耐稀土磁体粉末,则可以制造稀土基粘合磁体,其表现出高磁性和抗氧化性。\n\n此外,使用本发明的氧化耐氧化稀土基磁体粉末制造的稀土基粘结磁体不仅是由于抗氧化性的优异,而且是粘结磁体,不仅是由于优异的抗氧化性。在模制时,尽管由于磁体粉末的流动性,模制压力可以通过模制压力破裂,但是可以产生本发明的颗粒抗性表面,但是耐氧化耐氧化稀土磁粉本发明在构成形成在磁体粉末的最外表面上的沉积层的颜料颗粒用于实现润滑作用以提高磁体粉末在粘合磁体的模制时的流动性。\n\n通过抑制磁体粉末破裂并且氧化颗粒破碎表面被抑制,还通过形状压力推断。\n\n【0017】\n\n本发明的氧化耐氧化稀土基磁体粉末是通过本身已知的方法与树脂粘合剂一起与树脂粘合剂一起用于稀土基粘合磁体的化合物。作为树脂粘合剂,热固性树脂如环氧树脂,酚醛树脂,三聚氰胺树脂,聚酰胺(如尼龙66,尼龙6,尼龙12),聚乙烯,聚丙烯,聚氯乙烯,聚酯,聚苯丙烷如聚酯和聚苯硫醚。 ,橡胶,雌瘤,这些改性剂,共聚物,混合物(例如,热固性树脂(环氧树脂等)热塑性树脂的分散粉末:F. yamashita,稀土磁铁对小型电机行业的应用,PP.100-111,通过GC Hadjipanayis和Mjbonder编辑的,2002年8月18日至22日,2002年8月18日至22日,纽瓦克,特拉华州,美国纽瓦克,特拉华州,美国纽瓦克,纽克斯特·特拉华州的综合法,可以使用。希望树脂粘合剂与氧化耐稀土基磁体粉末的混合比在化合物中高达3重量%。当获得化合物时,可以在通常使用的添加量添加诸如偶联剂,润滑剂或固化剂的添加剂。\n\n【0018】\n\n通过压缩成型,注塑,挤出成型和挤出成型,使用本发明的抗氧化稀土基磁粉末的稀土基粘结磁体形成为预定的形状。生产化。例如,当进行压缩成型时,压缩成型方法是常用的压缩成型方法,模塑方法组合压缩成型和轧制成型(例如,Yamashita,稀土磁铁对小型电动机行业的应用, PP.100-111,第十七届国际研讨会,稀土磁铁及其应用程序,2002年8月18日至22日,纽瓦克,特拉华州,美国,由GC Hadjipanayis和Mjbonder编辑,雷顿新闻局,SEE)等)。\n\n【0019】\n\n通过压缩稀土基粘合磁体的化合物,压制构成形成在磁体粉末的最外表面上的沉积层的颜料被压下并填充在磁体粉末的颗粒之间并填充有粘合磁体。可以减少发生表面和内部的空位部分。优选在0.1GPa至1GPa的压力下施加复合压缩成型,更希望通过在0.3GPa至0.6GPa的压力下加压来进行。如果压力小于0.1GPa,由于压力太小并且粘合磁体不能充分降低,孔隙率的压力不能有效地降低。如果压力超过1 GPA,则压力也是如此大以打破磁铁粉末,并且可以产生新的裂缝表面。成型温度还取决于树脂粘合剂的类型,但通常是室温(20℃)至120℃。用于减少磁体粉末颗粒与磁体粉末和树脂粘合剂的颗粒之间的摩擦的颜料,并制备高密度粘合磁体,以及构成在磁体的最外表面上形成的沉积层的颜料粉末理想的是,模塑温度为80℃至100℃。为了增强颜料的流动性平稳地推动磁体粉末的颗粒和颗粒之间并容易填充。\n\n【0020】\n\n当使用热固性树脂作为树脂粘合剂时,最终将得到的模制体加热并固化为稀土基粘合磁体。模塑主体的加热固化可以根据常规方法进行,并且可以例如在惰性气体(例如氮气或氩气)的条件下进行,并且在140℃至200时真空真空进行℃至5小时。\n\n【0021】\n\n根据本发明,在具有小平均粒径(主直径)的稀土基磁粉之后,例如,平均粒径为约80μm至100μm,稀土基磁铁合金被加热氢气储存氢,然后脱水。通过处理然后冷却获得的磁各向异性HDDR(氢)\n\n阴离子抑制 - 解吸重组)该成分(参见日本专利公开No.6-82575)等也可以赋予优异的抗氧化性而不会导致磁性的劣化。此外,通过本身已知的方法预先用酸洗,脱脂和清洁预处理,可以预先处理稀土基磁粉末。\n\n【例子】\n\n【0022】\n\n在下文中,将通过实施例更详细地描述本发明,但是本发明不旨在解释。在以下实施例中,以下实施例由高频溶解使用:Nd12.8原子%,Dy1.0原子%,B6.3原子%,CO14.8原子%,Ga 0.5原子%,Zr 0.09原子%,平衡在1100℃的氩气气氛中产生和退火的Fe铸造24小时,在氩气气氛中粉碎氧气浓度为0.5%或更低,从平均颗粒中的0.15MPa为0.15MPa直径为100μm。氢化热处理在870℃下在氢气压力气氛中进行3小时,然后在850℃下在真空中在850℃下进行脱氢处理后进行冷却并制备的HDDR(1 KPA)氩气流。使用磁粉(平均晶粒尺寸0.4μm)。\n\n【0023】\n\n示例a:\n\n实验1:耐氧化HDDR磁粉的生产\n\n在300ml 0.09mol / L的乙醇溶液后,将100g HDDR磁粉浸入室温并混合并搅拌,用水流吸气器滤出处理和搅拌30秒并过滤30秒。随后,通过在50℃下加热和干燥真空30分钟,在HDDR磁粉的表面上形成无机磷酸涂膜。\n\n含有15重量%的水溶性环氧树脂重量羧酸盐作为有机颜料(平均粒径0.06μm)和有机分散介质的颜料,并用氨调节pH至7.2以将pH调节至7.2。a制备17cC的粘度。\n\n在形成30g HDDR磁粉末在形成的无机磷酸盐涂层的表面上,用无机磷酸盐浸入室温3分钟,并混合并搅拌,使用水流吸气器进行处理和搅拌,真空过滤进行30秒并过滤30秒。然后在100℃下在100℃下热干燥1小时。通过将所得附聚物挤压在研钵中,可以具有抗抗抗氧化HDDR磁性磁性粉末,其具有粘合剂层,其是通过无机磷酸盐涂层的铜酞菁的主要成分。我制造。\n\n以这种方式在150℃下在大气中在150℃下进行加热试验,测量试验前测试后通过氧化的重量增加速率。结果如表1所示。\n\n【0024】\n\n实验2:生产粘合磁铁及其特性\n\n将环氧树脂和酚醛固化剂以100:3的重量比溶于甲基乙基酮中以制备树脂溶液。在实验1和树脂溶液中制造的抗氧化HDDR磁粉之后均匀混合,使树脂液体的重量与耐氧化HDDR磁粉和树脂液体的总重量为3%,甲基乙基酮是常温。通过蒸发蒸发,得到粉末状稀土粘结磁体化合物。所得稀土基粘接磁体的化合物(成型,六六角= 0.96mA / m,Hex = 0.96mA / m,0.6gPa)在150℃(1GPa)的氩气气氛中的1小时内得到的模塑体1小时加热环氧树脂固化环氧树脂,尺寸垂直12.0mm×6.6mm宽×7.4mm,密度为5.9克/厘米3粘结磁铁制造。\n\n在大气中在大气中在150℃下在大气中进行加热试验,在测试之前通过氧​​化测量重量增加速率。另外,在相对于粘合磁体的磁化后,在大气中在大气中在大气中加热试验加热在大气中500小时,在150℃下进行热量测试100小时,并进行测试在测试磁通量劣化速率(不可逆磁化因子)之前测试了对每个热试验的测试。此外,在大气中在150℃下进行加热试验加热的粘合磁铁进行100小时,并在加热试验之前进行\n\n测量重组大豆后的磁通量劣化速率(永久性退磁速率)。这些结果如图2所示。参照图1和图2. 2和2。\n\n【0025】\n\n示例b:\n\n实验1:耐氧化HDDR磁粉的生产\n\n含有15重量%的丙烯酸类聚合物聚合物分散介质的乙醇处理溶液(粘度30cp),为作为颜料的有机颜料(平均粒径0.06μm)和15重量%的丙烯酸聚合物基聚合物分散介质被制备为有机分散介质。。\n\n使用该处理液体,是一种抗氧化抗性HDDR,其具有粘合剂层,其是通过无机磷酸盐化合物涂层以与实验1相同的方式作为主要成分的吲哚烯作为主要成分的主要成分。制备磁体粉末。在如此制造的氧化HDDR磁粉上进行类似于实施例A的实验1的加热试验,测量试验测试后通过氧化的重量增益速率。结果如表1所示。\n\n【0026】\n\n实验2:生产粘合磁铁及其特性\n\n使用在实验1中制造的氧化HDDR磁粉的实施例A的实验2相同的方式制造粘合磁体。在以这种方式制造的粘合磁体上执行类似于示例性实验2的各种测试。这些结果如图2所示。参照图1和图2. 2和2。\n\n【0027】\n\n示例c:\n\n实验1:耐氧化HDDR磁粉的生产\n\n在300ml磷酸钠水溶液中,0.14mol / L水溶液,将100g HDDR磁粉浸入室温下3分钟,并混合并搅拌,然后用水流动吸气器减压滤出处理过的磁体粉末30秒。然后,在真空中在120℃下热干燥30分钟后,在HDDR磁粉的表面上形成无机磷酸膜。\n\n以与实验1的实验1相同的方式,粘合剂层是粘合剂层是铜酞菁的主要成分通过无机磷酸盐涂层以与使用相同的处理液的实验1相同的方式。一个产生琥珀色氧化HDDR的琥珀色氧化HDDR磁粉。在如此制造的氧化HDDR磁粉上进行类似于实施例A的实验1的加热试验,测量试验测试后通过氧化的重量增益速率。结果如表1所示。\n\n【0028】\n\n实验2:生产粘合磁铁及其特性\n\n使用在实验1中制造的氧化HDDR磁粉的实施例A的实验2相同的方式制造粘合磁体。在以这种方式制造的粘合磁体上执行类似于示例性实验2的各种测试。这些结果如图2所示。参照图1和图2. 2和2。\n\n【0029】\n\n示例D:\n\n实验1:耐氧化HDDR磁粉的生产\n\n以与实施例B的实验1相同的方式,沉积层是主要成分,其主要是通过使用相同的处理液作为实验中使用的处理液体的无机磷酸盐涂层组成的主要成分。琥珀色抗氧化HDDR磁体制备具有表面的粉末。在如此制造的氧化HDDR磁粉上进行类似于实施例A的实验1的加热试验,测量试验测试后通过氧化的重量增益速率。结果如表1所示。\n\n【0030】\n\n实验2:生产粘合磁铁及其特性\n\n使用在实验1中制造的氧化HDDR磁粉的实施例A的实验2相同的方式制造粘合磁体。在以这种方式制造的粘合磁体上执行类似于示例性实验2的各种测试。这些结果如图2所示。参照图1和图2. 2和2。\n\n【0031】\n\n示例e:\n\n实验1:耐氧化HDDR磁粉的生产\n\n通过本身已知的真空蒸发方法在HDDR磁体粉末的表面上形成具有0.3μm的膜厚度为0.3μm的Al涂层。\n\n以与实验1的实验1相同的方式,粘合剂层在具有铜酞菁作为组分1的最外表面,如实施例A的实验1中,使用在实验1中使用的相同的处理液,琥珀色氧化耐摩擦HDDR磁体制造的粉末。在如此制造的氧化HDDR磁粉上进行类似于实施例A的实验1的加热试验,测量试验测试后通过氧化的重量增益速率。结果如表1所示。\n\n【0032】\n\n实验2:生产粘合磁铁及其特点\n\n使用在实验1中制造的氧化HDDR磁粉的实施例A的实验2相同的方式制造粘合磁体。在以这种方式制造的粘合磁体上执行类似于示例性实验2的各种测试。这些结果如图2所示。参照图1和图2. 2和2。\n\n【0033】\n\n比较例1:\n\n在HDDR磁粉中进行类似于实施例A的加热试验,其在没有任何表面处理的HDDR磁体粉末中,测量试验后通过氧化的重量增加速率。结果如表1所示。另外,以与使用没有任何表面处理的HDDR磁粉的实施例A的实验2中的实验2中相同的方式制造粘合磁体。在以这种方式制造的粘合磁体上执行类似于示例性实验2的各种测试。这些结果如图2所示。参照图1和图2. 2和2。\n\n【0034】\n\n比较例2:\n\n在实验A的实验1的表面上进行类似于实验1的加热试验,例如,进行类似于实施例A的实验1的加热试验,并且在测试前测试后通过氧化速率增加速率。它是测量的。结果如表1所示。此外,使用该HDDR磁体粉末的实验2将粘合磁体与实验2相同的方式制造。在以这种方式制造的粘合磁体上执行类似于示例性实验2的各种测试。这些结果如图2所示。参照图1和图2. 2和2。\n\n【0035】\n\n比较例3:\n\n一种HDDR磁散粉末,其中在通过实验1产生的表面上形成无机磷酸盐涂层,进行类似于实施例A的实验1的加热试验,并且在试验前测试后通过氧化进行重量增加。它被测量了。结果如表1所示。此外,使用该HDDR磁体粉末的实验2将粘合磁体与实验2相同的方式制造。在以这种方式制造的粘合磁体上执行类似于示例性实验2的各种测试。这些结果如图2所示。参照图1和图2. 2和2。\n\n【0036】\n\n比较例4:\n\n用HDDR磁粉进行类似于实施例A的加热试验,其中在实施例E的实验1中产生的表面上形成Al涂层,并测量通过氧化在试验后通过氧化的重量增加速率。 。结果如表1所示。此外,使用该HDDR磁体粉末的实验2将粘合磁体与实验2相同的方式制造。在以这种方式制造的粘合磁体上执行类似于示例性实验2的各种测试。这些结果如图2所示。参照图1和图2. 2和2。\n\n【0037】\n\n【表格1】\n\n\n\n【0038】\n\n[表2]\n\n\n\n【0039】\n\n从表1中明显看出,在实施例A至E E,对比例2至比较例4中制备的氧化HDDR磁粉末,实施例1中制备的表面涂覆的HDDR磁粉是比较例1中的任何一种,发现重量增加由于氧化引起的速率远小于没有表面处理的HDDR磁粉,并且这些磁粉体具有优异的抗氧化性。\n\n【0040】\n\n然而,从图1和图1中可以看出。参照图1和图2.如图2和表2所示,通过氧化作为粘合磁体的重量增加速率和磁通量降解速率显着降低了对比例2至对比例4的键合磁体。例1.有。另一方面,在实施例A至E E中的键磁体中,由于氧化引起的重量增加率也小于比较例1中的粘合磁体和磁通量降解速率。实施例A-实施例E中的键合磁体显示出这种优异的特性,其使用HDDR磁粉末形成预定形状,以施加优异的抗氧化性。与比较例2中的键合磁体与比较例4一起\n\n它基于氧化有效阻断的事实。另外,如果通过扫描电子显微镜观察到实施例A中的键磁体的表面,则证实孔环用粘合磁铁的树脂粘合剂固定的颜料颗粒密封。能够。还考虑这种效果是有助于这些粘合磁体具有优异的抗氧化性。\n\n【工业可用性】\n\n【0041】\n\n本发明可用于制备稀土基粘结磁体,其具有优异的抗氧化性能,可用于制造氢基粘合磁粉及其制造方法。有可能。\n\n[简要描述;简介]\n\n【0042】\n\n【图1】通过加热试验显示磁通量劣化速率(不可逆阻尼因子)的测量结果的图表在空气中在100℃下加热500小时。\n\n【图2】显示测量结果在加热试验中产生的图表在大气中在150℃下加热100小时。');
INSERT INTO `os_patent_instruction_text` VALUES (13011, 22840, '【0001】耐酸化性希土類系磁石粉末およびその製造方法、 希土類系ボンド磁石用コンパゥ ンド、 希土類系ポンド磁石およびその製造方法 技術分野\n\n【0002】本発明は、 耐酸化性に優れるとともに高い磁気特性を示す希土類系ボンド磁石 を製造するために有用な、 耐酸化性希土類系磁石粉末およびその製造方法、 希土 類系ボンド磁石用コンパウンド、 希土類系ボンド磁石およびその製造方法に関す る。 背景技術\n\n【0003】N d— F e— B系磁石粉末に代表される R— F e— B系磁石粉末 （R：希土類 元素） などの希土類系磁石粉末を、 バインダとして熱可塑性樹脂や熱硬ィ匕性樹脂 などを用いて所定形状に成形することで製造される希土類系ポンド磁石は、 樹脂 バインダを含有しているために希土類系焼結磁石に比較すれば磁気特性が低くな るものの、 フェライト磁石などに比べればなお十分に高い磁気特性を有しており、 また、 複雑形状や薄肉形状の磁石やラジアル異方性磁石を容易に得ることができ るといった希土類系焼結磁石にはない特徴を持っている。 従って、 希土類系ボン ド磁石は、 特にスピンドルモータやステッピングモー夕などの小型モ一夕に多く 用いられ、 近年、 その需要が増加している。\n\n【0004】希土類系磁石粉末は高い磁気特性を有するが、 Rや F eが組成の大半を占める ことから腐食や酸化を起しやすいという問題がある。 そのため、 希土類系ポンド \'磁石の製造においては、 まず、 希土類系磁石粉末を、 溶解もしくは溶融 （軟化） させた樹脂バインダと混合して磁石粉末の表面が樹脂バインダで被覆されたコン パウンドと呼ばれる粉末顆粒状原料を調製した後、 このコンパウンドを射出成形 や圧縮成形や押出成形し、 用いる樹脂バインダが熱硬化性樹脂である場合にはさ らに加熱して樹脂バインダを硬化させることで所定形状に成形して製品化される。 しかしながら、 このようにして製品化された希土類系ボンド磁石であっても、 そ\n\nの表面に希土類系磁石粉末が露出していると、 わずかな酸やアルカリや水分など の存在によって磁石粉末が腐食して鑌が発生したり、 1 0 o °c程度の大気中でも 酸化が進行したりするので、 例えば部品組み込み後に磁気特性の劣ィ匕やばらつき を招くことがある。 また、 樹脂バインダとして汎用されているエポキシ樹脂ゃナ ィロン樹脂などは水分や酸素の透過性を有する。 従って、 これらの樹脂を樹脂バ ィンダに用いた希土類系ボンド磁石においては、 樹脂を透過した水分や酸素で希 土類系磁石粉末が腐食したり酸ィヒしたりする可能性があることを否定できない。 さらに、 希土類系磁石粉末が腐食や酸化を起しやすいことに鑑みれば、 射出成形 を行う場合には混練成形時の温度条件に配慮する必要があるし、 圧縮成形を行う 場合には成形後の硬化処理を不活性ガス雰囲気中や真空中で行う必要がある。 また、 コンパウンドを圧縮成形して所定形状に成形して製造されたポンド磁石 には、 磁石粉末の粒子と粒子の間に樹脂パインダが十分に充填されないことに起 因する空孔 （空隙） 部が磁石の表面や内部に存在するので、 わずかな酸やアル力 リや水分などによっても、 これらが空孔部に浸入することにより磁石の表面から 腐食が進行して鯖が発生するという問題がある。 この問題の解決手段としては、 コンパウンドにおける磁石粉末に対する樹脂バインダの配合割合を増やす方法が 考えられるが、 樹脂バインダの配合割合を増やした場合には、 コンパウンドの流 動性が悪くなるので製造上の問題が発生したり、 磁石粉末の密度が低下すること で磁気特性が低くなつたりするので、 コンパゥンドにおける磁石粉末に対する樹 脂バインダの配合割合には上限があることから （通常 3重量％程度)、 この方法 は有効な解決手段にはならない。\n\n【0005】以上のような問題を解消すべく、 希土類系磁石粉末に耐酸化性を付与する方法 として、 例えば、 特開昭 6 4 - 1 1 3 0 4号公報ゃ特開平 7— 2 7 8 6 0 2号公 報において、 希土類系磁石粉末の表面に、 無機燐酸化合物被膜 （燐を構成成分と する被膜） を形成する方法が提案されている。 しかしながら、 無機燐酸化合物被 膜を表面に形成してなる希土類系磁石粉末を用いて所定形状に成形した希土類系 ポンド磁石は、 酸ィ匕による磁気特性の経時変ィ匕が大きいという問題がある。 この 現象は、 ポンド磁石の成形時、 磁石粉末の流れ性不足に起因して成形圧力により 磁石粉末が割れたりし、 酸化しやすい粒子破面が露出することなどによると推察\n\nされる。\n\n【0006】また、 希土類系ボンド磁石に存在する空孔部の処理方法について種々の方法が 提案されていることは周知の通りであるが、 例えば、 特開 2 0 0 1—1 1 5 0 4 号公報に記載されている方法のように、 既に存在する空孔部を封孔する方法では、 磁石の表面における空孔部の処理には効果を発揮するものの、 磁石の内部の空孔 部は十分に処理できないという問題がある。 従って、 希土類系ポンド磁石の表面 や内部に発生する空孔部に対しては、 既に存在する空孔部をいかに封孔するかと いう視点よりも、 空孔部が発生しないようにいかにポンド磁石を製造するかとい う視点に立って解決手段を検討する方が適切であると考えられる。 例えば、 特開 平 5— 1 2 9 1 1 9号公報に記載されている、 核となる磁石粉末の表面に固体樹 脂の被膜を形成し、 さらにその表面に液体樹脂の被膜を介して核となる磁石粉末 よりも小さい磁石粉末を付着させた造粒粉末を用いたボンド磁石の製造方法は、 この視点に立ったものであり、 圧縮成形時における成形体の高密度ィ匕を促進して 空孔部の発生を軽減するものである。 しかしながら、 この方法は注目に値するも のであるが、 幾つもの製造工程を経なければならないといつた問題がある。\n\n【0007】そこで本発明は、 耐酸化性に優れるとともに高い磁気特性を示す希土類系ボン ド磁石を製造するために有用な、 耐酸化性希土類系磁石粉末およびその製造方法、 希土類系ポンド磁石用コンパウンド、 希土類系ボンド磁石およびその製造方法を 提供することを目的とする。 発明の開示\n\n【0008】上記の技術背景に基づいてなされた本発明の耐酸化性希土類系磁石粉末は、 請 求の範囲第 1項記載の通り、 顔料を主たる構成成分とする被着層を表面に有して なることを特徴とする。\n\n【0009】また、 請求の範囲第 2項記載の耐酸化性希土類系磁石粉末は、 請求の範囲第 1 項記載の耐酸化性希土類系磁石粉末において、 顔料が無機顔料であることを特徴 とする。\n\n【0010】また、 請求の範囲第 3項記載の耐酸化性希土類系磁石粉末は、 請求の範囲第 2 項記載の耐酸化性希土類系磁石粉末において、 無機顔料がカーボンブラックであ\n\nることを特徴とする。\n\n【0011】また、 請求の範囲第 4項記載の耐酸化性希土類系磁石粉末は、 請求の範囲第 1 項記載の耐酸化性希土類系磁石粉末において、 顔料が有機顔料であることを特徴 とする。\n\n【0012】また、 請求の範囲第 5項記載の耐酸化性希土類系磁石粉末は、 請求の範囲第 4 項記載の耐酸化性希土類系磁石粉末において、 有機顔料がィンダンスレン系顔料 またはフタロシアニン系顔料であることを特徴とする。\n\n【0013】また、 請求の範囲第 6項記載の耐酸ィ匕性希土類系磁石粉末は、 請求の範囲第 1 項記載の耐酸化性希土類系磁石粉末において、 顔料の平均粒径 （長径） が 0 . 0 l ;ti m〜0 . 5 z/ mであることを特徴とする。\n\n【0014】また、 請求の範囲第 7項記載の耐酸化性希土類系磁石粉末は、 請求の範囲第 1 項記載の耐酸化性希土類系磁石粉末において、 希土類系磁石粉末の平均粒径 （長 径） が 2 0 0 m以下であることを特徴とする。\n\n【0015】また、 請求の範囲第 8項記載の耐酸化性希土類系磁石粉末は、 請求の範囲第 7 項記載の耐酸化性希土類系磁石粉末において、 希土類系磁石粉末が HDD R磁石 粉末であることを特徴とする。\n\n【0016】また、 請求の範囲第 9項記載の耐酸化性希土類系磁石粉末は、 請求の範囲第 1 項記載の耐酸化性希土類系磁石粉末において、 希土類系磁石粉末の表面に形成さ れた 1層以上の被膜を介して最表面に被着層を有してなることを特徴とする。 また、 請求の範囲第 1 0項記載の耐酸ィ匕性希土類系磁石粉末は、 請求の範囲第 9項記載の耐酸化性希土類系磁石粉末において、 希土類系磁石粉末の表面に形成 された被膜が無機燐酸化合物被膜であることを特徴とする。\n\n【0017】また、 請求の範囲第 1 1項記載の耐酸化性希土類系磁石粉末は、 請求の範囲第 9項記載の耐酸化性希土類系磁石粉末において、 希土類系磁石粉末の表面に形成 された被膜が金属被膜であることを特徴とする。\n\n【0018】また、 本発明の顔料を主たる構成成分とする被着層を表面に有してなる耐酸化 性希土類系磁石粉末の製造方法は、 請求の範囲第 1 2項記載の通り、 希土類系磁 石粉末と顔料含有処理液を混合した後、 顔料含有処理液が表面に付着した希土類 系磁石粉末を乾燥することを特徴とする。\n\nまた、 請求の範囲第 1 3項記載の製造方法は、 請求の範囲第 1 2項記載の製造 方法において、 希土類系磁石粉末と顔料含有処理液を混合した後、 濾過を行って 顔料含有処理液が表面に付着した希土類系磁石粉末を取得することを特徴とする。 また、 請求の範囲第 1 4項記載の製造方法は、 請求の範囲第 1 2項記載の製造 方法において、 顔料含有処理液中における顔料の含有量が 5重量％〜3 3重量％ であることを特徴とする。\n\n【0019】また、 請求の範囲第 1 5項記載の製造方法は、 請求の範囲第 1 2項記載の製造 方法において、 顔料含有処理液が有機分散媒を含有してなることを特徴とする。 また、 希土類系磁石粉末の表面に形成された 1層以上の被膜を介して最表面に 顔料を主たる構成成分とする被着層を有してなる耐酸化性希土類系磁石粉末の製 造方法は、 請求の範囲第 1 6項記載の通り、 表面に 1層以上の被膜を形成した希 土類系磁石粉末と顔料含有処理液を混合した後、 顔料含有処理液が最表面に付着 した希土類系磁石粉末を乾燥することを特徴とする。\n\n【0020】また、 本発明の希土類系ポンド磁石用コンパウンドは、 請求の範囲第 1 7項記 載の通り、 請求の範囲第 1項記載の耐酸化性希土類系磁石粉末と樹脂バインダと からなることを特徴とする。\n\n【0021】また、 本発明の希土類系ポンド磁石は、 請求の範囲第 1 8項記載の通り、 請求 の範囲第 1 7項記載の希土類系ポンド磁石用コンパゥンドを用いて所定形状に成 形されてなることを特徴とする。\n\n【0022】また、 本発明の希土類系ポンド磁石の製造方法は、 請求の範囲第 1 9項記載の 通り、 請求の範囲第 1 7項記載の希土類系ポンド磁石用コンパウンドを用いて少 なくとも圧縮成形を含む工程にて所定形状に成形し、 必要に応じて得られた成形 体を加熱硬化することを特徴とする。\n\n【0023】また、 請求の範囲第 2 0項記載の製造方法は、 請求の範囲第 1 9項記載の製造 方法において、 圧縮成形を 0 . 1 G P a〜l G P aの圧力で加圧して行うことを 特徴とする。\n\n【0024】本発明によれば、 耐酸化性に優れるとともに高い磁気特性を示す希土類系ボン ド磁石を製造するために有用な、 耐酸化性希土類系磁石粉末およびその製造方法、 希土類系ポンド磁石用コンパウンド、 希土類系ボンド磁石およびその製造方法が\n\n提供される。 図面の簡単な説明\n\n【0025】図 1は、 実施例 Iにおける、 大気中 1 0 0 °Cで 5 0 0時間加熱する加熱試験に よる磁束劣化率 （不可逆減磁率） の測定結果を示すグラフである。\n\n【0026】図 2は、 同、 大気中 1 5 0 °Cで 1 0 0時間加熱する加熱試験における測定結果 を示すグラフである。\n\n【0027】図 3は、 同、 表面に存在する空孔部の個数を示すグラフである。\n\n【0028】図 4は、 同、 水への浸漬時間と重量変化率の関係を示すグラフである。\n\n【0029】図 5は、 実施例 Πにおける、 大気中 1 0 0 °Cで 5 0 0時間加熱する加熱試験に よる磁束劣化率 （不可逆減磁率） の測定結果を示すグラフである。\n\n【0030】図 6は、 同、 大気中 1 5 0 °Cで 1 0 0時間加熱する加熱試験における測定結果 を示すグラフである。 発明を実施するための最良の形態\n\n【0031】本発明の耐酸化性希土類系磁石粉末は、 例えば、 希土類系磁石粉末と顔料含有 処理液を混合した後、 顔料含有処理液が表面に付着した希土類系磁石粉末を乾燥 することにより製造することができる。\n\n【0032】顔料含有処理液の調製方法としては、 例えば、 アンモニアなどで p Hを 6 . 5 〜9 . 0に調整した弱アルカリ性水に顔料を分散させる方法が挙げられる。 処理 液の p Hを 6 . 5〜9 . 0に調整するのは、 処理液による希土類系磁石粉末の腐 食を防止するためである。 処理液の粘度は、 良好な取扱性を確保するといつた観 点から、 2 c P〜5 0 c Pが望ましい。 なお、 顔料含有処理液は、 ェチルアルコ 一ルゃィソプロピルアルコールなどの有機溶媒に顔料を分散させたものであって もよい。\n\n【0033】顔料としては、 有機顔料と無機顔料のいずれの顔料も用いることができる。 有 機顔料としては、 インダンスレン系顔料やフタロシアニン系顔料の他、 ァゾ系、 キナクリドン系、 アントラキノン系、 ジォキサンジン系、 インジゴ系、 チォイン ジゴ系、 ペリノン系、 ペリレン系、 イソインドレン系、 ァゾメチンァゾ系、 ジケ\n\nトピロロピロ一ル系の顔料などが挙げられる。 顔料として有機顔料を用いた場合、 有機顔料を主たる構成成分とする被着層を表面に有してなる希土類系磁石粉末は、 樹脂バインダとからなる希土類系ボンド磁石用コンパウンドに適度の粘弾性と優 れた流動性を付与するとともに、 被着層を構成する有機顔料が圧縮成形時に受け る応力を吸収して緩和するので磁石粉末の破碎が起こつて新生破面が生成すると いったことが起きにくくなる点において都合がよい。 また、 有機顔料の種類によ つては、 ポンド磁石に高抵抗性を付与することができることが期待される。 中で も、 インダンスレン系顔料やフタロシアニン系顔料は、 耐食性や耐熱性に優れる ので、 これらは好適な有機顔料であるといえる。\n\n【0034】無機顔料としては、 カーボンブラック、 二酸化チタン、 酸化鉄、 酸化クロム、 酸化亜鉛、 アルミナ、 硫化亜鉛、 タルク、 マイ力、 炭酸カルシウムなどが挙げら れる。 顔料として無機顔料を用いた場合、 希土類系磁石粉末の表面に形成された 無機顔料を主たる構成成分とする被着層は、 酸素や水蒸気などの非透過性に優れ ることから、 磁石粉末にとりわけ優れた耐酸化性を付与することができる点にお いて都合がよい。 好適な無機顔料としては、 カーボンブラックが挙げられる。 顔料の平均粒径 （長径） は、 顔料含有処理液中における顔料の均一分散性を確 保するといつた観点から、 0 . 0 l m〜0 . 5 β mが望ましい。 平均粒径が 0 . 0 未満であると、 その製造が困難であるとともに処理液中で凝集しやすく なって取扱性に劣る一方、 平均粒径が 0 . 5 mを超えると、 処理液中における 比重が大きくなつてしまって沈降してしまったりする恐れがある。\n\n【0035】処理液中における顔料の含有量は、 5重量％〜3 3重量％が望ましい。 含有量 が 5重量％未満であると、 十分量の顔料からなる被着層が希土類系磁石粉末の表 面に形成さ ήず、 優れた耐酸化性を磁石粉末に付与することができなくなる恐れ がある一方、 含有量が 3 3重量％を超えると、 処理液中で顔料が凝集や沈降して しまい、 その分散性が悪化する恐れがあるからである。 なお、 処理液中における 顔料の含有量は、 より望ましくは 1 0重量％〜3 0重量％である。\n\n【0036】顔料含有処理液には有機分散媒を添加することが望ましい。 有機分散媒は、 処 理液中での顔料の凝集や沈降を抑制する目的で使用されるものである。 有機分散 媒としては、 ァニオン性分散媒 （脂肪族系多価カルボン酸、 ポリエーテルポリエ\n\nステルカルボン酸塩、 高分子ポリエステル酸ポリアミン塩、 高分子量ポリカルボ ン酸長鎖ァミン塩など）、 非イオン性分散媒 （ポリオキシエチレンアルキルエー テルやソルビ夕ンエステルなどのカルボン酸塩ゃスルフォン酸塩やアンモニゥム 塩など）、 高分子分散媒 （水溶性エポキシのカルボン酸塩ゃスルフォン酸塩ゃァ ンモニゥム塩など、 スチレン—アクリル酸共重合物、 ニカヮなど） が、 上記の目 的の観点から、 また、 顔料との親和性やコストの観点などから好適に用いられる。 処理液中への有機分散媒の添加量は、 9重量％〜2 4重量％が望ましい。 添加 量が 9重量％未満であると、 顔料の分散性が低下する恐れがある一方、 2 4重 量％を超えると、 処理液の粘性が高くなりすぎて取扱性に劣る恐れがあるからで ある。\n\n【0037】耐酸化性希土類系磁石粉末は、 例えば、 以上のようにして調製された顔料含有 処理液に、 希土類系磁石粉末を浸漬して混合攪拌した後、 顔料含有処理液が表面 に付着した希土類系磁石粉末を濾取してからこれを乾燥して製造することができ る。 顔料含有処理液に希土類\'系磁石粉末を浸漬して混合攪拌する時間は、 希土類 系磁石粉末量などにも依存するが、 概ね 1分〜 2 0分である。 顔料含有処理液が 表面に付着した希土類系磁石粉末を濾取する際、 減圧濾過や加圧濾過を行えば、 磁石粉末の表面に顔料をより強固に吸着せしめることができる。 磁気特性の劣化 を招くことなく希土類系磁石粉末に耐酸化性を付与するためには、 乾燥は、 自然 乾燥または不活性ガス （窒素ガスやアルゴンガスなど） 雰囲気中や真空中 8 0 °C 〜1 2 0 C加熱乾燥が望ましい。 加熱乾燥を採用する場合の乾燥時間は、 希土類 系磁石粉末量などにも依存するが、 概ね 2 0分〜 2時間である。 濾取した顔料含 有処理液が表面に付着した希土類系磁石粉末が凝集塊となっている場合には予め 解砕してから乾燥することが望ましい。 なお、 顔料含有処理液が表面に付着した 希土類系磁石粉末の取得は、 希土類系磁石粉末に顔料含有処理液を噴霧すること で行ってもよい。\n\n【0038】以上のようにして希土類系磁石粉末の表面に形成された顔料を主たる構成成分 とする被着層は、 優れた耐酸化性を磁石粉末に付与するものであるが、 この被着 層は、 磁石粉末成分が関与する化学反応に基づいて形成されたものではなく、 ナ ノメ一トルオーダ一の顔料微粒子が分子間力で磁石粉末の表面に吸着して形成さ\n\nれたものであるので、 その形成過程において、 磁石粉末の表面付近が変質して磁 石粉末の磁気特性が劣ィ匕するといつた問題などがない。 従って、 本発明の耐酸化 性希土類系磁石粉末を用いれば、 耐酸化性に優れるとともに高い磁気特性を示す 希土類系ポンド磁石を製造することができる。\n\n【0039】さらに、 本発明の耐酸ィ匕性希土類系磁石粉末を用いて製造された希土類系ボン ド磁石が耐酸化性に優れるのは、 磁石粉末が耐酸化性に優れることによるだけで なく、 通常、 ポンド磁石の成形時においては、 磁石粉末の流れ性不足に起因して 成形圧力により磁石粉末が割れて酸化しやすい粒子破面が生じこりすることがあ るが、 本発明の耐酸化性希土類系磁石粉末を用いた場合には、 磁石粉末の表面に 形成された被着層を構成する顔料粒子が、 ボンド磁石の成形時における磁石粉末 の流れ性を改善する潤滑作用を発揮することで、 成形圧力により磁石粉末が割れ て酸化しやすい粒子破壊面が生じたりすることが抑制されていることにもよると 推測される。\n\n【0040】また、 希土類系ポンド磁石の成形方法として、 圧縮成形方法や、 圧縮成形と圧 延成形を組み合わせた成形方法 （例えば、 F.Yamashita, Applications of Rare- Earth Magnets to the Small motor industry, pp.100-111, Proceedings of the seventeenth international workshop, Rare Earth Magnets and Their Applications, August 18-22, 2002, Newark, Delaware, USA, Edited by G. C. Hadjipanayis and M.J. Bonder, Rinton Press を参照） などを採用した場合、 通 常、 製造されたポンド磁石の表面には無数の空孔部が存在するが、 本発明の耐酸 化性希土類系磁石粉末を用いて製造された希土類系ボンド磁石においては、 その ような空孔部を、 磁石粉末の表面に形成された被着層を構成する顔料粒子が封孔 するという効果があり、 このことも本発明の耐酸化性希土類系磁石粉末を用いて 製造された希土類系ボンド磁石が耐酸化性に優れることに寄与していると考えら れる。\n\n【0041】本発明によれば、 平均粒径 （長径） が小さい （例えば 200 m以下） 希土類 系磁石粉末、 例えば、 平均粒径が 80 ^m〜l 00 zm程度の、 希土類系磁石合 金を水素中で加熱して水素を吸蔵させた後、 脱水素処理し、 次いで冷却すること に よ っ て得 ら れる磁気的異方性の H D D R ( Hydrogenation-\n\nDi sproport ionat ion-Desorpt ion-Recombinat ion) 磁石粉末 （特公平 6— 8 2 5 7 5号公報参照） などに対しても、 磁石粉末の表面付近を変質させることがない ので、 磁気特性の劣化を引き起すことなく優れた耐酸ィ匕性を付与することができ る。 なお、 希土類系磁石粉末は、 予め、 自体公知の方法によって酸洗や脱脂や洗 浄などの前処理が施されたものであってもよい。\n\n【0042】また、 本発明の耐酸化性希土類系磁石粉末は、 希土類系磁石粉末の表面に形成 された 1層以上の被膜を介して最表面に顔料を主たる構成成分とする被着層を有 してなるものであってもよい。 このような耐酸化性希土類系磁石粉末は、 例えば、 表面に 1層以上の被膜を形成した希土類系磁石粉末と顔料含有処理液を混合した 後、 顔料含有処理液が最表面に付着した希土類系磁石粉末を乾燥することにより 製造することができる。 表面に 1層以上の被膜を形成した希土類系磁石粉末とし ては、 例えば、 特開昭 6 4— 1 1 3 0 4号公報ゃ特開平 7— 2 7 8 6 0 2号公報 に記載の、 表面に耐酸ィヒ性被膜である無機燐酸化合物被膜を形成した希土類系磁 石粉末などが挙げられる。 また、 希土類系磁石粉末の表面に形成する被膜は、 無 機燐酸化合物被膜に限定されるものではなく、 アルミニウム被膜や亜鉛被膜など の金属被膜、 ポリイミド被膜などの樹脂被膜といった自体公知の耐酸化性被膜で あってもよい。 また、 複数の被膜からなる積層被膜であってもよい。 以上のよう にして希土類系磁石粉末の最表面に形成された顔料を主たる構成成分とする被着 層は、 その下層に形成された被膜の耐酸化性作用が十分でない場合であっても、 その耐酸化性作用を効果的に補填や増強する。\n\n【0043】本発明の耐酸化性希土類系磁石粉末は、 自体公知の方法によつて樹脂バインダ とともに希土類系ボンド磁石用コンパゥンドとされる。 樹脂バインダとしては、 エポキシ樹脂、 フエノール樹脂、 メラミン樹脂などの熱硬化性樹脂、 ポリアミド\n\n【0044】(ナイロン 6 6やナイロン 6やナイロン 1 2など）、 ポリエチレン、 ポリプロピ レン、 ポリ塩化ビニル、 ポリエステル、 ポリフエ二レンサルファイドなどの熱可 塑性樹脂、 ゴムやエストラマ、 これらの変性体や共重合体や混合物 （例えば、 熱 硬化性樹脂 （エポキシ樹脂など） に熱可塑性樹脂の粉末を分散させたもの： F. Yamashi ta, Appl icat ions of Rare-Ear th Magnets to the Smal l motor indus try, pp. 100-111, Proceedings of the seventeenth internat ional\n\nworkshop, Rare Earth Magnets and Their Applications, August 18-22, 2002, Newark, Delaware, USA, Edited by G. C. Had] ipanayis and M. J. Bonder, Rinton Press を参照） などを用いることができる。 コンパウンドにおける耐酸 化性希土類系磁石粉末に対する樹脂バインダの配合割合は、 3重量％を上限とす ることが望ましい。 コンパウンドを得る際には、 カップリング剤や潤滑剤や硬化 剤などの添加剤を通常用いられる添加量にて添加してもよい。\n\n【0045】本発明の耐酸化性希土類系磁石粉末を用いた希土類系ボンド磁石は、 以上のよ うにして調製された希土類系ボンド磁石用コンパウンドを圧縮成形や射出成形や 押出成形などにより所定形状に成形して製品化される。 例えば、 圧縮成形を行う 場合、 圧縮成形方法は、 一般的に行われる圧縮成形方法の他、 圧縮成形と圧延成 形を組み合わせた成形方法 （例えば、 前出の F.Yamashita, Applications of Rare-Earth Magnets to the Small motor industry, pp.100-111, Proceedings of the seventeenth international workshop, Rare Earth Magnets and Their Applications, August 18-22, 2002, Newark, Delaware, USA, Edited by G.C. Hadj ipanayis and M. J. Bonder, Rinton Pressを参照） などを含む。\n\n【0046】希土類系ボンド磁石用コンパゥンドを圧縮成形することにより、 磁石粉末の最 表面に形成された被着層を構成する顔料が磁石粉末の粒子と粒子の間に押しやら れて充填されることで、 ボンド磁石の表面や内部における空孔部の発生を軽減す ることができる。 コンパウンドの圧縮成形は、 0. 1 GP a〜l GP aの圧力で 加圧して行うことが望ましく、 0. 3GPa〜0. 6 GP aの圧力で加圧して行 うことがより望ましい。 圧力が 0. l GP a未満であると、 圧力が小さすぎてポ ンド磁石の高密度ィ匕を十分に図ることができないことに起因して空孔部の発生を 効果的に軽減することができない恐れがある一方、 圧力が 1 GP aを越えると、 圧力が大きすぎて磁石粉末の破碎が起って新生破面が生成したりする恐れがある からである。 成形温度は、 樹脂バインダの種類にも依存するが、 通常、 室温 （2 0°C) 〜120°Cである。 磁石粉末の粒子相互間や磁石粉末の粒子と樹脂バイン ダとの間の摩擦を低減させて高密度なポンド磁石とするため、 また、 磁石粉末の 最表面に形成された被着層を構成する顔料の流動性を高めて顔料が磁石粉末の粒 子と粒子の間に円滑に押しやられて充填されやすくするためには、 成形温度は 8\n\n0°C〜10 o°cとすることが望ましい。\n\n【0047】樹脂バインダとして熱硬化性樹脂を用いた場合、 最後に、 得られた成形体を加 熱硬化することで希土類系ポンド磁石とする。 成形体の加熱硬化は常法に従って 行えばよく、 例えば、 不活性ガス （窒素ガスやアルゴンガスなど） 雰囲気中や真 空.中 140 ° (：〜 200 °Cにて 1時間〜 5時間の条件で行えばよい。\n\n【0048】本発明により製造される希土類系ボンド磁石にさらなる耐食性を付与すること などを目的として、 その表面に樹脂塗装被膜や電気めつき被膜などの各種被膜を 単層形成や積層形成してもよいことはいうまでもない。 実施例\n\n【0049】以下、 本発明を実施例によってさらに詳細に説明するが、 本発明はこれに限定 して解釈されるものではない。 なお、 以下の実施例は、 高周波溶解によって組 成： Nd l 2. 8原子％， Dy 1. 0原子％， B 6. 3原子％， Co 14. 8原 子％, Ga O. 5原子％, Z r 0. 09原子％, 残部 Feの铸隗を作製し、 アル ゴンガス雰囲気中で 1100°CX 24時間焼鈍したものを酸素濃度 0. 5%以 下のアルゴンガス雰囲気中で粉枠して平均粒径 100 mの粉砕粉としてからこ れを 0. 15 MP aの水素ガス加圧雰囲気中で 870 °C X 3時間の水素化熱処 理を行い、 その後、 減圧 （1 kP a) アルゴンガス流気中で 850°CX 1時間 の脱水素処理を行ってから冷却して製造した HDD R磁石粉末 （平均結晶粒径 0. 4 m) を用いて行った。\n\n【0050】実施例 I\n\n【0051】(実施例 A)\n\n【0052】実験 1 ：耐酸化性 HDD R磁石粉末の製造\n\n【0053】顔料として無機顔料であるカーボンブラック （平均粒径 0. 08 m) を 17 重量％と有機分散媒として水溶性エポキシのカルボン酸塩を 15重量％含み、 ァ ンモニァで pHを 7. 2に調整して水性処理液 （粘度 l O cP) を調製した。\n\n【0054】50mlの処理液に HDD R磁石粉末 50 gを室温で 3分間浸漬して混合攪拌 した後、 処理済磁石粉末を水流ァスピレー夕を用いて 30秒間減圧濾過を行って 濾取し、 その後、 真空中 100°Cで 1時間加熱乾燥した。 得られた凝集塊を乳鉢\n\nで解砕することで、 カーボンブラックを主たる構成成分とする被着層を表面に有 してなる黒色の耐酸化性 HDD R磁石粉末を製造した。\n\n【0055】このようにして製造された耐酸化性 HDDR磁石粉末 1 gに対し、 大気中 15 0°Cで 100時間加熱する加熱試験を行い、 試験前に対する試験後における酸化 による重量増加率を測定した。 結果を表 1に示す。\n\n【0056】実験 2 ：ポンド磁石の製造とその特性\n\n【0057】エポキシ樹脂とフエノール系硬化剤を重量比率で 100 ： 3の割合でメチルェ チルケトンに溶解して樹脂液を調製した。 実験 1で製造した耐酸ィ匕性 HD D R磁 石粉末と樹脂液を、 耐酸化性 HDD R磁石粉末と樹脂液の合計重量に対する樹脂 液の重量の比率が 3 %となるように均一混合した後、 メチルェチルケトンを常温 で蒸発させて粉末顆粒状の希土類系ボンド磁石用コンパウンドを得た。 得られた 希土類系ポンド磁石用コンパウンドを、 圧縮成形 （100°C温間磁場中成形、 H e x=0. 96 MA/m, 0. 6 GP a) し、 得られた成形体を 150°Cのアル ゴンガス雰囲気中で 1時間加熱してエポキシ樹脂を硬ィ匕させて、 寸法が縦 12. OmmX横 7. 6mmX高さ 7. 4mmで密度が 5. 9 cm3のポンド磁石 を製造した。\n\n【0058】こうして製造されたポンド磁石に対し、 大気中 150°Cで 100時間加熱する 加熱試験を行い、 試験前に対する試験後における酸化による重量増加率を測定し た。 また、 ポンド磁石に対して着磁を行った後、 大気中 100°Cで 500時間加 熱する加熱試験と大気中 150°Cで 100時間加熱する加熱試験を行い、 それぞ れの加熱試験について、 試験前に対する試験後における磁束劣化率 （不可逆減磁 率） を測定した。 さらに、 大気中 150 で 100時間加熱する加熱試験を行つ たボンド磁石については再着磁を行い、 加熱試験前に対する再着磁後における磁 束劣化率 （永久減磁率） を測定した。 これらの結果を図 1と図 2と表 2に示す。\n\n【0059】(実施例 B)\n\n【0060】実験 1 ：耐酸化性 HDD R磁石粉末の製造\n\n【0061】顔料として有機顔料であるインダンスレン （平均粒径 0. 06 2m) を 17重 量％と有機分散媒として水溶性エポキシのカルボン酸塩を 15重量％含み、 アン モニァで pHを 7. 2に調整して水性処理液 （粘度 15 c P) を調製した。\n\nこの処理液を用いて実施例 Aの実験 1と同様にしてインダンスレンを主たる構 成成分とする被着層を表面に有してなる藍色の耐酸ィ匕性 HDD R磁石粉末を製造 した。 こうして製造された耐酸化性 HDD R磁石粉末に対し、 実施例 Aの実験 1 と同様の加熱試験を行い、 試験前に対する試験後における酸ィ匕による重量増加率 を測定した。 結果を表 1に示す。\n\n【0062】実験 2 ：ボンド磁石の製造とその特性\n\n【0063】実験 1で製造した耐酸ィ匕性 HDDR磁石粉末を用いて実施例 Aの実験 2と同様 にしてポンド磁石を製造した。 こうして製造されたボンド磁石に対し、 実施例 A の実験 2と同様の各種試験を行った。 これらの結果を図 1と図 2と表 2に示す。 (実施例 C)\n\n【0064】実験 1 ：耐酸化性 HDD R磁石粉末の製造\n\n【0065】顔料として有機顔料である銅フタロシアニン （平均粒径 0. 06 fim) を 17 重量％と有機分散媒として水溶性エポキシのカルボン酸塩を 1 5重量％含み、 ァ ンモニァで pHを 7. 2に調整して水性処理液 （粘度 17 c P) を調製した。 この処理液を用いて実施例 Aの実験 1と同様にして銅フタロシアニンを主たる 構成成分とする被着層を表面に有してなる藍色の耐酸化性 HDD R磁石粉末を製 造した。 こうして製造された耐酸化性 HDD R磁石粉末に対し、 実施例 Aの実験 1と同様の加熱試験を行い、 試験前に対する試験後における酸化による重量増加 率を測定した。 結果を表 1に示す。\n\n【0066】実験 2 ：ボンド磁石の製造とその特性\n\n【0067】実験 1で製造した耐酸化性 HD D R磁石粉末を用いて実施例 Aの実験 2と同様 にしてポンド磁石を製造した。 こうして製造されたポンド磁石に対し、 実施例 A の実験 2と同様の各種試験を行った。 これらの結果を図 1と図 2と表 2に示す。\n\n【0068】(実施例 D)\n\n【0069】実験 1 ：耐酸化性 HD D R磁石粉末の製造\n\n【0070】顔料として有機顔料であるインダンスレン （平均粒径 0. 06^m) を 17重 量％と有機分散媒としてァクリル重合物系高分子分散媒を 15重量％含んだェチ ルアルコール処理液 （粘度 30 c P) を調製した。\n\n【0071】この処理液を用いて実施例 Aの実験 1と同様にしてインダンスレンを主たる構\n\n成成分とする被着層を表面に有してなる藍色の耐酸化性 HD D R磁石粉末を製造 した。 こうして製造された耐酸ィヒ性 HD D R磁石粉末に対し、 実施例 Aの実験 1 と同様の加熱試験を行い、 試験前に対する試験後における酸ィヒによる重量増加率 を測定した。 結果を表 1に示す。\n\n【0072】実験 2 ：ポンド磁石の製造とその特性\n\n【0073】実験 1で製造した耐酸ィ匕性 HD D R磁石粉末を用いて実施例 Aの実験 2と同様 にしてポンド磁石を製造した。 こうして製造されたポンド磁石に対し、 実施例 A の実験 2と同様の各種試験を行った。 これらの結果を図 1と図 2と表 2に示す。 (実施例 E)\n\n【0074】実験 1 ：耐酸化性 HD D R磁石粉末の製造\n\n【0075】顔料として無機顔料である力一ポンプラック （平均粒径 0 . 0 8 m) を 1 7 重量％と有機分散媒としてァクリル重合物系高分子分散媒を 1 5重量％含んだェ チルアルコール処理液 （粘度 2 8 c P ) を調製した。\n\n【0076】この処理液を用いて実施例 Aの実験 1と同様にして力一ボンブラックを主たる 構成成分とする被着層を表面に有してなる黒色の耐酸化性 HD D R磁石粉末を製 造した。 こうして製造された耐酸化性 HD D R磁石粉末に対し、 実施例 Aの実験 1と同様の加熱試験を行い、 試験前に対する試験後における酸化による重量増加 率を測定した。 結果を表 1に示す。\n\n【0077】実験 2 ：ポンド磁石の製造とその特性\n\n【0078】実験 1で製造した耐酸ィヒ性 HD D R磁石粉末を用いて実施例 Aの実験 2と同様 にしてポンド磁石を製造した。 こうして製造されたポンド磁石に対し、 実施例 A の実験 2と同様の各種試験を行った。 これらの結果を図 1と図 2と表 2に示す。 (比較例）\n\n【0079】何らの表面処理も行っていない HD D R磁石粉末に対し、 実施例 Aの実験 1と 同様の加熱試験を行い、 試験前に対する試験後における酸ィ匕による重量増加率を 測定した。 結果を表 1に示す。 また、 何らの表面処理も行っていない HD D R磁 石粉末を用いて実施例 Aの実験 2と同様にしてポンド磁石を製造した。 こうして 製造されたポンド磁石に対し、 実施例 Aの実験 2と同様の各種試験を行った。 こ れらの結果を図 1と図 2と表 2に示す。\n\n耐酸化性 HDDR磁石粉末 重量増加率》)\n\n【0080】実施例 A 0.05\n\n【0081】実施例 B 0.05\n\n【0082】実施例 G 0.06\n\n【0083】実施例 D 0.04\n\n【0084】実施例 E 0.04\n\n【0085】比較例（未処理粉末） 0.30 表 2\n\n【0087】( n = 3 ) 表 1から明らかなように、 実施例 A〜実施例 Eにおいて製造された耐酸ィヒ性 H D D R磁石粉末は、 何らの表面処理も行っていない HD D R磁石粉末よりも酸化 による重量増加率が遥かに少なく、 これらの磁石粉末は耐酸化性に優れることが わかった。\n\n【0088】また、 図 1と図 2と表 2から明らかなように、 実施例 A〜実施例 Eにおけるポ ンド磁石は、 比較例におけるボンド磁石よりも酸ィヒによる重量増加率も磁束劣化 率も少なかった。 実施例 A〜実施例 Eにおけるボンド磁石がこのような優れた特 性を示すのは、 優れた耐酸化性が付与された HD D R磁石粉末を用いて所定形状 に成形されていることに基づくものであるとともに、 コンパウンド作製時や所定\n\n形状に成形する際の圧縮成形時や成形後においても、 磁石粉末の割れなどによる 表面損傷が抑制されていることで酸ィヒが効果的に阻止されていることに基づくも のである。 また、 これらのポンド磁石の表面を走査型電子顕微鏡にて観察すれば、 その空孔部がボンド磁石の樹脂バインダで固着した顔料粒子で封孔されているこ とを確認することができる。 このような効果もこれらのボンド磁石が耐酸化性に 優れることに寄与していると考えられる。 ·\n\n【0089】評価 A：ポンド磁石の表面に存在する空孔部の個数\n\n【0090】実施例 Aと実施例 Bと比較例における 3種類のポンド磁石について、 縦 1 2 . O mmX高さ 7 . 4 mmの面を高さ方向に 7エリアに均等区分し、 圧縮方向で ある上方から下方に向かってナンバリングを行い、 各エリアの表面を電子顕微鏡 にて観察した。 各エリアに存在する直径 2 0 i m以上の空孔部の個数をカウント し、 1 mm2あたりの個数を算出した。 結果を図 3に示す。 図 3から明らかなよ うに、 実施例 Aと実施例 Bにおけるポンド磁石は、 比較例におけるポンド磁石よ りも空孔部の個数が遥かに少なかった。\n\n【0091】評価 B：ポンド磁石の水 の浸漬時間と重量変化率の関係\n\n【0092】実施例 Aと実施例 Bと比較例における 3種類のボンド磁石について、 水への浸 漬時間と重量変化率の関係を調べた。 結果を図 4に示す。 図 4から明らかなよう に、 実施例 Aと実施例 Bにおけるポンド磁石は、 比較例におけるポンド磁石より も重量変化率が遥かに少なかった。 また、 比較例におけるポンド磁石を封孔処理 したポンド磁石の重量変化率は、 実施例 Aと実施例 Bにおけるポンド磁石の重量 変化率と、 比較例におけるポンド磁石の重量変化率の中間的なものであった。 こ の結果は、 比較例におけるポンド磁石を封孔処理したポンド磁石は、 磁石の表面 における空孔部は効果的に処理されているものの、 磁石の内部の空孔部は十分に 処理されていないことを示す一方、 実施例 Aと実施例 Bにおけるポンド磁石は、 磁石の表面のみならず内部における空孔部の発生も軽減されていることを示すも のであると考えられた。\n\n【0093】注：比較例におけるボンド磁石の封孔処理方法 \'\n\n【0094】比較例におけるボンド磁石を実施例 Aの工程 1で調製した水性処理液に浸漬し、 圧力を 0 . 5 P aに保持した真空容器中で空孔部に処理液を減圧含浸させた後、\n\n真空容器内を常圧に戻してからポンド磁石を取り出し、 その表面を水洗すること により過剰に付着している処理液を除去した後に大気中 120°Cで 20分間乾燥 させて行った。\n\n【0095】実施例 H\n\n【0096】(実施例 A)\n\n【0097】実験 1 ：耐酸化性 HDD R磁石粉末の製造\n\n【0098】燐酸濃度が 0. 09 mo 1 ZLのエチルアルコール溶液 30 OmI^;iHDDR 磁石粉末 100 gを室温で 3分間浸漬して混合攪拌した後、 処理済磁石粉末を水 流ァスピレ一タを用いて 30秒間減圧濾過を行って濾取し、 その後、 真空中 12 0 °Cで 30分間加熱乾燥することで HD D R磁石粉末の表面に無機燐酸ィヒ合物被 膜を形成した。\n\n【0099】顔料として有機顔料である銅フタロシアニン （平均粒径 0. 06 urn) を 17 重量％と有機分散媒として水溶性エポキシのカルボン酸塩を 15重量％含み、 ァ ンモニァで pHを 7. 2に調整して水性処理液 （粘度 17 c P) を調製した。 表面に無機燐酸ィヒ合物被膜を形成した HDD R磁石粉末 50 gを 5 Om 1の処 理液に室温で 3分間浸潰して混合攪拌した後、 処理済磁石粉末を水流ァスピレー 夕を用いて 30秒間減圧濾過を行って濾取し、 その後、 真空中 100 で 1時間 加熱乾燥した。 得られた凝集塊を乳鉢で解砕することで、 無機燐酸化合物被膜を 介して銅フタロシアニンを主たる構成成分とする被着層を最表面に有してなる藍 色の耐酸化性 HDD R磁石粉末を製造した。\n\n【0100】このようにして製造された耐酸化性 HDDR磁石粉末 1 gに対し、 大気中 15 0°Cで 100時間加熱する加熱試験を行い、 試験前に対する試験後における酸化 による重量増加率を測定した。 結果を表 3に示す。\n\n【0101】実験 2 ：ポンド磁石の製造とその特性\n\n【0102】エポキシ樹脂とフエノール系硬化剤を重量比率で 100 ： 3の割合でメチルェ チルケトンに溶解して樹脂液を調製した。 実験 1で製造した耐酸化性 HD D R磁 石粉末と樹脂液を、 耐酸化性 HDDR磁石粉末と樹脂液の合計重量に対する樹脂 液の重量の比率が 3 %となるように均一混合した後、 メチルエヂルケトンを常温 で蒸発させて粉末顆粒状の希土類系ボンド磁石用コンパウンドを得た。 得られた\n\n希土類系ポンド磁石用コンパウンドを、 圧縮成形 （10 O :温間磁場中成形、 H e x=0. 96MA/m 0. 6 GP a) し、 得られた成形体を 150。Cのアル ゴンガス雰囲気中で 1時間加熱してエポキシ樹脂を硬ィヒさせて、 寸法が縦 12. OmmX横 7. 6mmX高さ 7. 4mmで密度が 5. 9 g/ cm3のポンド磁石 を製造した。\n\n【0103】こうして製造されたポンド磁石に対し、 大気中 150°Cで 100時間加熱する 加熱試験を行い、 試験前に対する試験後における酸化による重量増加率を測定し た。 また、 ポンド磁石に対して着磁を行った後、 大気中 100°Cで 500時間加 熱する加熱試験と大気中 15 Otで 100時間加熱する加熱試験を行い、 それぞ れの加熱試験について、 試験前に対する試験後における磁束劣化率 （不可逆減磁 率） を測定した。 さらに、 大気中 150°Cで 100時間加熱する加熱試験を行つ たボンド磁石については再着磁を行い、 加熱試験前に対する再着磁後における磁 束劣化率 （永久減磁率） を測定した。 これらの結果を図 5と図 6と表 4に示す。\n\n【0104】(実施例 B)\n\n【0105】実験 1 ：耐酸化性 HDD R磁石粉末の製造\n\n【0106】顔料として有機顔料であるインダンスレン （平均粒径 0. 06 m) を 17重 量％と有機分散媒としてァクリル重合物系高分子分散媒を 15重量％含んだェチ ルアルコール処理液 （粘度 30 cP) を調製した。\n\n【0107】この処理液を用いて実施例 Aの実験 1と同様にして無機燐酸ィヒ合物被膜を介し てインダンスレンを主たる構成成分とする被着層を最表面に有してなる藍色の耐 酸化性 HDD R磁石粉末を製造した。 こうして製造された耐酸化性 HDD R磁石 粉末に対し、 実施例 Aの実験 1と同様の加熱試験を行い、 試験前に対する試験後 における酸化による重量増加率を測定した。 結果を表 3に示す。\n\n【0108】実験 2 ：ポンド磁石の製造とその特性\n\n【0109】実験 1で製造した耐酸ィヒ性 HD D R磁石粉末を用いて実施例 Aの実験 2と同様 にしてポンド磁石を製造した。 こうして製造されたポンド磁石に対し、 実施例 A の実験 2と同様の各種試験を行った。 これらの結果を図 5と図 6と表 4に示す。\n\n【0110】(実施例 C)\n\n【0111】実験 1 ：耐酸化性 HDD R磁石粉末の製造\n\n燐酸二水素ナトリゥム濃度が 0 . 1 4 m o 1 ZLの水溶液 3 0 0 mLに HD D R磁石粉末 1 0 0 gを室温で 3分間浸漬して混合攪拌した後、 処理済磁石粉末を 水流ァスピレ一タを用いて 3 0秒間減圧濾過を行って濾取し、 その後、 真空中 1 2 0 °Cで 3 0分間加熱乾燥することで HD D R磁石粉末の表面に無機燐酸化合物 被膜を形成した。\n\n【0112】実施例 Aの実験 1で用いた処理液と同様の処理液を用いて実施例 Aの実験 1と 同様にして無機燐酸ィヒ合物被膜を介して銅フタロシアニンを主たる構成成分とす る被着層を最表面に有してなる藍色の耐酸ィ匕性 HD D R磁石粉末を製造した。 こ うして製造された耐酸化性 HDD R磁石粉末に対し、 実施例 Aの実験 1と同様の 加熱試験を行い、 試験前に対する試験後における酸ィ匕による重量増加率を測定し た。 結果を表 3に示す。\n\n【0113】実験 2 ：ポンド磁石の製造とその特性\n\n【0114】実験 1で製造した耐酸化性 HD D R磁石粉末を用いて実施例 Aの実験 2と同様 にしてポンド磁石を製造した。 こうして製造されたポンド磁石に対し、 実施例 A の実験 2と同様の各種試験を行った。 これらの結果を図 5と図 6と表 4に示す。 (実施例 D)\n\n【0115】実験 1 ：耐酸化性 HD D R磁石粉末の製造\n\n【0116】実施例 Bの実験 1で用いた処理液と同様の処理液を用いて実施例 Cの実験 1と 同様にして無機燐酸化合物被膜を介してインダンスレンを主たる構成成分とする 被着層を最表面に有してなる藍色の耐酸ィ匕性 HD D R磁石粉末を製造した。 こう して製造された耐酸化性 HD D R磁石粉末に対し、 実施例 Aの実験 1と同様の加 熱試験を行い、 試験前に対する試験後における酸化による重量増加率を測定した。 結果を表 3に示す。\n\n【0117】実験 2 ：ポンド磁石の製造とその特性\n\n【0118】実験 1で製造した耐酸化性 HD D R磁石粉末を用いて実施例 Aの実験 2と同様 にしてポンド磁石を製造した。 こうして製造されたポンド磁石に対し、 実施例 A の実験 2と同様の各種試験を行った。 これらの結果を図 5と図 6と表 4に示す。\n\n【0119】(実施例 E )\n\n【0120】実験 1 ：耐酸化性 HD D R磁石粉末の製造\n\n自体公知の真空蒸着法によって HDDR磁石粉末の表面に膜厚 0. 3 mの A 1被膜を形成した。\n\n【0121】実施例 Aの実験 1で用いた処理液と同様の処理液を用いて実施例 Aの実験 1と 同様にして A 1被膜を介して銅フタロシアニンを主たる構成成分とする被着層を 最表面に有してなる藍色の耐酸ィ匕性 HDDR磁石粉末を製造した。 こうして製造 された耐酸ィヒ性 HDDR磁石粉末に対し、 実施例 Aの実験 1と同様の加熱試験を 行い、 試験前に対する試験後における酸ィ匕による重量増加率を測定した。 結果を 表 3に示す。\n\n【0122】実験 2 ：ポンド磁石の製造とその特性\n\n【0123】実験 1で製造した耐酸化性 HDDR磁石粉末を用いて実施例 Aの実験 2と同様 にしてポンド磁石を製造した。 こうして製造されたポンド磁石に対し、 実施例 A の実験 2と同様の各種試験を行った。 これらの結果を図 5と図 6と表 4に示す。 (比較例 1 )\n\n【0124】何らの表面処理も行っていない HDDR磁石粉末に対し、 ·実施例 Aの実験 1と 同様の加熱試験を行い、 試験前に対する試験後における酸化による重量増加率を 測定した。 結果を表 3に示す。 また、 何らの表面処理も行っていない HDDR磁 石粉末を用いて実施例 Aの実験 2と同様にしてポンド磁石を製造した。 こうして 製造されたポンド磁石に対し、 実施例 Aの実験 2と同様の各種試験を行った。 こ れらの結果を図 5と図 6と表 4に示す。\n\n【0125】(比較例 2)\n\n【0126】実施例 Aの実験 1で製造した表面に無機燐酸化合物被膜を形成した HDDR磁 石粉末に対し、 実施例 Aの実験 1と同様の加熱試験を行い、 試験前に対する試験 後における酸化による重量増加率を測定した。 結果を表 3に示す。 また、 この H DDR磁石粉末を用いて実施例 Aの実験 2と同様にしてポンド磁石を製造した。 こうして製造されたボンド磁石に対し、 実施例 Aの実験 2と同様の各種試験を行 つた。 これらの結果を図 5と図 6と表 4に示す。\n\n【0127】(比較例 3)\n\n【0128】実施例 Cの実験 1で製造した表面に無機燐酸化合物被膜を形成した HDDR磁 石粉末に対し、 実施例 Aの実験 1と同様の加熱試験を行い、 試験前に対する試験\n\n後における酸ィヒによる重量増加率を測定した。 結果を表 3に示す。 また、 この H D D R磁石粉末を用いて実施例 Aの実験 2と同様にしてポンド磁石を製造した。 こうして製造されたボンド磁石に対し、 実施例 Aの実験 2と同様の各種試験を行 つた。 これらの結果を図 5と図 6と表 4に示す。\n\n【0129】(比較例 4 )\n\n【0130】実施例 Eの実験 1で製造した表面に A 1被膜を形成した HD D R磁石粉末に対 し、 実施例 Aの実験 1と同様の加熱試験を行い、 試験前に対する試験後における 酸ィ匕による重量増加率を測定した。 結果を表 3に示す。 また、 この HD D R磁石 粉末を用いて実施例 Aの実験 2と同様にしてポンド磁石を製造した。 こうして製 造されたポンド磁石に対し、 実施例 Aの実験 2と同様の各種試験を行った。 これ らの結果を図 5と図 6と表 4に示す。 表 3\n\n【0131】耐酸化性 HDDR磁石粉末 重量増加率 (%)\n\n【0132】比較例 1 (未処理粉末） 0.30\n\n【0133】比較例 2 0.01\n\n【0134】比較例 3 0.01\n\n【0135】比較例 4 0.01\n\n【0136】実施例 A 0.01\n\n【0137】実施例 B 0.01\n\n【0138】実施例 C 0.01\n\n【0139】実施例 D 0.01\n\n【0140】実施例 E 0.01\n\n表 4\n\n【0142】( n = 3 ) 表 3から明らかなように、 実施例 A〜実施例 Eにおいて製造された耐酸化性 H D D R磁石粉末、 比較例 2〜比較例 4において製造された表面被覆 HD D R磁石 粉末は、 比較例 1の何らの表面処理も行っていない HD D R磁石粉末よりも酸化 による重量増加率が遥かに少なく、 これらの磁石粉末は耐酸化性に優れることが わかった。\n\n【0143】しかしながら、 図 5と図 6と表 4から明らかなように、 比較例 2〜比較例 4に おけるボンド磁石は、 比較例 1におけるボンド磁石と同程度に酸ィ匕による重量増 加率と磁束劣化率が顕著であった。 一方、 実施例 A〜実施例 Eにおけるポンド磁 石は、 比較例 1におけるボンド磁石よりも酸化による重量増加率も磁束劣化率も 少なかった。 実施例 A〜実施例 Eにおけるボンド磁石がこのような優れた特性を 示すのは、 優れた耐酸化性が付与された HD D R磁石粉末を用いて所定形状に成 形されていることに基づくものであるとともに、 比較例 2〜比較例 4におけるポ ンド磁石と異なり、 コンパウンド作製時や所定形状に成形する際の圧縮成形時や 成形後においても、 磁石粉末の割れなどによる表面損傷が抑制されていることで 酸化が効果的に阻止されていることに基づくものである。 また、 実施例 A〜実施 例 Eにおけるボンド磁石の表面を走査型電子顕微鏡にて観察すれば、 その空孔部\n\nがボンド磁石の樹脂バインダで固着した顔料粒子で封孔されていることを確認す ることができる。 このような効果もこれらのボンド磁石が耐酸化性に優れること に寄与していると考えられる。 産業上の利用可能性\n\n【0144】本発明は、 耐酸化性に優れるとともに高い磁気特性を示す希土類系ポンド磁石 を製造するために有用な、 耐酸化性希土類系磁石粉末およびその製造方法、 希土 類系ボンド磁石用コンパウンド、 希土類系ボンド磁石およびその製造方法を提供 することができる点において産業上の利用可能性を有する。', '【0001】抗氧化稀土磁铁粉末及其制造方法，稀土粘结磁铁用化合物，稀土磅磁铁及其制造方法技术领域\n\n  【0002】本发明可用于制造耐氧化性优异且磁特性高的稀土类粘结磁铁，耐氧化稀土类磁铁粉末及其制造方法。 磁铁用化合物，稀土类粘结磁铁及其制造方法技术领域本发明涉及磁铁用化合物，稀土类粘结磁铁及其制造方法。 背景技术\n\n  【0003】N d-F e-B磁体粉末，例如R-F e-B磁体粉末（R：稀土元素），被用作热塑性树脂或热固性的粘合剂。 通过使用不渗透性树脂将其成型为预定形状而制造的稀土类磅磁体具有比稀土类烧结磁体低的磁性，这是因为其包含树脂粘合剂。 与铁氧体磁体等相比，它具有足够高的磁特性，并且可以容易地获得稀土基烧结磁体，例如形状复杂或薄的磁体或径向各向异性磁体。 它具有功能。 因此，稀土粘结磁体通常用于小型电动机，例如主轴电动机和步进电动机，并且近年来对它们的需求正在增加。\n\n  【0004】稀土磁体粉末具有高磁性，但是由于R和Fe占大部分，因此存在容易发生腐蚀和氧化的问题。 因此，在稀土类磁体的生产中，首先，将稀土类磁体粉末与熔融或熔融（软化）的树脂粘合剂混合，并且磁体粉末的表面是称为化合物的粉末，称为化合物。 在制备粒状原料之后，将该化合物注射成型，压缩成型或挤出成型，并且如果所使用的树脂粘合剂是热固性树脂，则进一步加热以将树脂粘合剂固化成预定形状。 它被模制并商业化。 但是，即使这样制造的稀土类粘结磁铁为\n\n 如果稀土磁铁粉末暴露在磁铁表面，则磁铁粉末会由于少量的酸，碱或湿气而腐蚀，并且会生成铅，甚至在约10°C的大气中也会发生氧化。 结果，在组装部件之后，可能发生磁性能的劣等或变化。 通常用作树脂粘合剂的环氧树脂和尼龙树脂具有透湿性和透氧性。 因此，在将这些树脂用作树脂粘合剂的稀土类粘结磁体中，稀土类磁体粉末有可能被渗透到树脂中的水或氧气腐蚀或酸化。 不能。 此外，考虑到稀土磁体粉末容易腐蚀或氧化，需要在进行注射成型时在捏合和成型期间以及在进行压缩成型时在成型之后考虑温度条件。 必须在惰性气体气氛或真空中进行固化处理。 另外，通过将化合物压缩并模制成预定形状而制造的池塘磁体由于树脂夹料的填充不足而在磁体粉末的颗粒之间具有空隙（空隙）。 由于它存在于磁体的表面和内部，因此即使少量的酸，碱或水渗入孔中，腐蚀也会从磁体的表面发展，并会导致鲭鱼产生。  .. 解决该问题的方法是提高复合物中的树脂粘合剂与磁铁粉末的配合比例，但是，如果增加树脂粘合剂的配合比例，则化合物的流动性降低，成为制造上的问题。 由于出现问题并且由于磁体粉末的密度降低而导致磁性能降低，因此在该化合物中树脂粘合剂与磁体粉末的混合比具有上限（通常为约3重量％）。 此方法不是有效的解决方案。\n\n  【0005】作为解决上述问题的赋予稀土类磁铁粉末抗氧化性的方法，例如有日本特开昭64-1131、047号公报和日本特开昭7-2号公报。 在出版物No.78602中，已经提出了一种在稀土磁体粉末的表面上形成无机磷酸化合物涂层（含磷作为成分的涂层）的方法。 然而，通过使用在表面上形成有无机磷酸化合物被膜的稀土类磁铁粉末而形成为规定形状的稀土类磁铁，存在稀土类磁铁的磁特性随时间变化较大的问题。 该现象被认为是由于以下事实：在磅磁体的模制期间，由于磁体粉末的流动性不足而导致的模制压力，磁体粉末破裂，从而暴露出容易被氧化的颗粒的破裂表面。\n\n 有待完成。\n\n  【0006】众所周知，已经提出了各种方法来处理稀土基粘结磁体中存在的空隙。 如在日本专利特开No.4-4中描述的方法，密封存在的孔的方法对于处理磁体表面上的孔是有效的，但是磁体内部的孔是有效的。 有一个问题，部门不能充分处理它。 因此，对于在稀土类磅磁铁的表面和内部产生的空隙，有必要设置池塘磁铁以使其不出现空隙，而不是如何密封已有的空隙。 从制造的角度考虑解决方案被认为是更合适的。 例如，如日本未经审查的专利公开（Kokai）No.5-112911中所述，在作为芯的磁铁粉末的表面上形成固体树脂膜，并且在芯的表面上进一步形成液态树脂的芯以形成芯。 从该观点出发，使用附着有比所使用的磁铁粉末小的磁铁粉末的造粒粉末的粘结磁铁的制造方法，可以提高压缩成形时的成形体的高密度。 目的是减少空隙的产生。 然而，该方法是值得注意的，但是它具有必须经历几个制造步骤的问题。\n\n  因此，本发明提供了一种抗氧化稀土磁体粉末及其制造方法，其可用于制造具有优异的抗氧化性和高磁性能的稀土粘结磁体。 本发明的目的是提供一种化合物，稀土类粘结磁体及其制造方法。 发明内容\n\n  【0008】基于上述技术背景而制造的本发明的抗氧化稀土磁体粉末在其表面上具有粘附层，该粘附层包含颜料作为主要构成成分，如权利要求1所述。 它的特点是具有。\n\n  【0009】根据权利要求2的抗氧化稀土磁体粉末是根据权利要求1的抗氧化稀土磁体粉末，其特征在于该颜料是无机颜料。 和\n\n  【0010】此外，根据权利要求3的抗氧化稀土磁体粉末是根据权利要求2的抗氧化稀土磁体粉末，其中无机颜料是炭黑。\n\n 它的特点是\n\n  【0011】此外，根据权利要求4的抗氧化稀土磁体粉末是根据权利要求1的抗氧化稀土磁体粉末，其特征在于，所述颜料是有机颜料。 和\n\n  【0012】此外，根据权利要求5的抗氧化稀土磁体粉末是根据权利要求4的抗氧化稀土磁体粉末，其中所述有机颜料是茚满蒽类颜料或酞菁类颜料。 它的特征是颜料。\n\n  【0013】此外，根据权利要求6的耐酸和稀土类磁铁粉末是根据权利要求1的抗氧化的稀土类磁铁粉末，其中，颜料的平均粒径（长轴）为 是0 l lti m〜0.5 z / m。\n\n  【0014】此外，根据权利要求7的抗氧化稀土磁体粉末是根据权利要求1的抗氧化稀土磁体粉末，其中稀土磁体粉末的平均粒径为（ 它的长轴小于200 m。\n\n  【0015】此外，根据权利要求8的抗氧化稀土磁体粉末是根据权利要求7的抗氧化稀土磁体粉末，其中稀土磁体粉末是HDD R磁体粉末。 特点是\n\n  【0016】此外，根据权利要求9的抗氧化稀土磁体粉末是根据权利要求1的抗氧化稀土磁体粉末，其形成在稀土磁体粉末的表面上。 其特征在于它通过一个或多个涂层在最外表面上具有被粘物层。 另外，权利要求10所述的耐酸稀土磁体粉末是权利要求9所述的抗氧化稀土磁体粉末，其中，在所述稀土磁体粉末的表面上形成的被膜为： 其特征在于是无机磷酸化合物膜。\n\n  【0017】此外，根据权利要求11的抗氧化稀土磁体粉末是根据权利要求9的抗氧化稀土磁体粉末，其形成在稀土磁体粉末的表面上。 涂膜是金属膜。\n\n  【0018】一种表面上具有以本发明的颜料为主要成分的被粘物层的耐氧化稀土类磁铁粉末的制造方法，其特征在于，权利要求12所述： 该方法的特征在于，在将稀土磁体粉末与含颜料处理液混合后，将附着有表面的含颜料处理液的稀土磁体粉末干燥。\n\n 此外，根据权利要求13的制造方法是根据权利要求12的制造方法，其中将稀土磁体粉末和含颜料的处理液混合，然后过滤以获得含颜料的处理液。 是获得粘附在表面的稀土磁铁粉末。 此外，根据权利要求14的制造方法是根据权利要求12的制造方法，其中在含有颜料的处理液中颜料的含量为5重量％至33重量％。 的特点是。\n\n  【0019】根据权利要求15所述的制造方法，其特征在于，在根据权利要求12所述的制造方法中，所述含颜料处理液包含有机分散介质。 去做。 此外，用于制造抗氧化稀土磁体粉末的方法是通过在稀土磁体粉末表面上形成的一层或多层涂层在最外表面具有包含颜料作为主要成分的被粘物层。 如权利要求16所述，在将在表面具有一层以上的涂层的稀土类磁铁粉末与含颜料的处理液混合后，将附着有附着有颜料的处理液的稀土类磁铁粉混合到最外表面。 其特征在于将磁铁粉末干燥。\n\n  【0020】此外，本发明的稀土类池塘磁体用化合物，如权利要求17所述，其包含权利要求1所述的耐氧化物的稀土磁体粉末和树脂粘合剂。 它的特点是\n\n  【0021】此外，通过使用如权利要求18所述的权利要求17所述的稀土基磅磁铁用化合物，将本发明的稀土基磅磁铁形成为预定形状。 它的特点是完成。 \n\n【0022】此外，本发明的稀土类池塘磁铁的制造方法如权利要求19所述，并且至少使用权利要求17所述的稀土类磅磁铁用化合物。 两者的特征在于它们都在包括压缩成型的步骤中成型为预定形状，并且如果需要，将所得成型体加热固化。\n\n  【0023】权利要求20所述的制造方法是权利要求19所述的制造方法，其中，在0.1GPa〜1GPa的压力下进行压缩成型。 它的特点是执行。\n\n  根据本发明，提供了一种抗氧化稀土磁体粉末及其制造方法，其可用于制造具有优异的抗氧化性和高磁性能的稀土粘结磁体。 磁铁，稀土粘结磁铁的化合物及其制造方法\n\n 提供。 附图的简要说明\n\n  【0025】图1是示出在100℃下进行500小时的实施例I的加热试验中的磁通劣化率（不可逆退磁率）的测定结果的曲线图。\n\n  【0026】图2是表示将试样在大气中在150℃下加热100小时的加热试验中的测定结果的曲线图。\n\n  【0027】图3是示出存在于表面上的孔的数量的图。\n\n  【0028】图4是示出在水中的浸入时间与重量变化率之间的关系的图。\n\n  【0029】图5是表示实施例II的加热试验中的磁通劣化率（不可逆退磁率）的测定结果的图，该加热试验是通过在空气中于100℃下加热500小时来进行的。\n\n  【0030】图6是表示将试样在大气中在150℃下加热100小时的加热试验的测定结果的曲线图。 实施本发明的最佳模式\n\n  【0031】本发明的抗氧化稀土磁体粉末是通过例如将稀土磁体粉末和含颜料的处理液混合，然后干燥其上粘附有颜料处理液体的稀土磁体粉末而获得的。 可以制造。\n\n  制备含颜料的处理液的方法的实例包括其中将颜料分散在用氨水等将pH调节至6.5至9.0的弱碱性水中的方法。 为了防止稀土磁铁粉末被处理液腐蚀，将处理液的pH调节至6.5〜9.0。 从确保良好的操作性的观点出发，处理液的粘度优选为2cP〜50cP。 含颜料的处理液可以是其中颜料分散在有机溶剂例如乙醇中的一种。\n\n  【0033】作为颜料，可以使用有机颜料或无机颜料。 除了茚满蒽类颜料和酞菁类颜料之外，有机颜料还包括偶氮类，喹ac啶酮类，蒽醌类，二恶烷类，靛蓝类，硫代靛类，Perinone类，per类，异吲哚类，偶氮二甲基偶氮类， 西克\n\n 其实例包括吡咯并吡咯颜料。 当使用有机颜料作为颜料时，具有在表面上包含有机颜料作为主要成分的被粘物层的稀土磁体粉末具有适合由树脂粘合剂组成的稀土粘结磁体化合物的粘弹性。 除了提供出色的流动性外，形成粘附层的有机颜料还可以吸收和释放压缩成型过程中施加的应力，这会导致磁铁粉末破裂并形成新的断裂表面。 便利之处在于变得困难。 另外，取决于有机颜料的类型，预期可以赋予池磁体高电阻。 其中，阴丹士林类颜料和酞菁类颜料具有优异的耐腐蚀性和耐热性，因此，可以说它们是合适的有机颜料。\n\n  【0034】无机颜料的实例包括炭黑，二氧化钛，氧化铁，氧化铬，氧化锌，氧化铝，硫化锌，滑石，迈卡拉，碳酸钙等。 当使用无机颜料作为颜料时，形成在作为主要成分的稀土磁体粉末的表面上的粘附层对氧气，水蒸气等的不渗透性优异。 方便之处在于可以赋予优异的抗氧化性。 合适的无机颜料包括炭黑。 从确保颜料在含颜料的处理液中均匀分散的观点出发，颜料的平均粒径（长轴）优选为0.0lm至0.5βm。 如果平均粒径小于0.0，则其生产困难并且倾向于在处理液中附聚，导致可操作性差。 比重可能会增加并沉降。\n\n  【0035】处理液中的颜料含量优选为5重量％〜33重量％。 如果该含量小于5重量％，则在稀土磁体粉末的表面上将不会形成足够量的颜料沉积层，并且可能不会赋予磁体粉末优异的抗氧化性。 另一方面，如果含量超过33重量％，则颜料会凝集或沉降在处理液中，并且其分散性可能劣化。 处理液中颜料的含量更优选为10重量％至30重量％。\n\n  【0036】期望向含颜料的处理液中添加有机分散介质。 有机分散介质用于抑制颜料在处理液中的聚集和沉降的目的。 作为有机分散介质，阴离子分散介质（脂肪族多元羧酸，聚醚聚醚\n\n 星状羧酸盐，高分子量聚酯酸多胺盐，高分子量聚羧酸长链胺盐等），非离子分散介质（聚氧乙烯烷基醚，失水山梨糖醇酸酯等羧酸盐和磺酸盐）。 氨盐等），聚合物分散介质（水溶性环氧树脂的羧酸盐，磺酸盐，铵盐等，苯乙烯-丙烯酸共聚物，nikka等） 从与颜料的亲和力和成本的角度考虑，优选使用它。 添加到处理液中的有机分散介质的量优选为9重量％至24重量％。 如果添加量少于9重量％，则颜料的分散性可能降低，而如果超过24重量％，则处理液的粘度可能太高并且操作性可能劣化。 在那儿。\n\n  【0037】例如，通过将稀土类磁铁粉末浸渍在如上所述制备的含颜料的处理液中并在表面上混合并搅拌该稀土类磁铁粉末来制备。 它可以通过过滤附着的稀土磁铁粉末然后干燥来制造。 将稀土金属磁体粉末浸渍在含颜料的处理液中并混合和搅拌的时间大约为1至20分钟，尽管这取决于稀土磁体粉末等的量。 当通过过滤收集其表面上粘附有含颜料的处理液的稀土磁体粉末时，可以进行真空过滤或压力过滤以将颜料更牢固地吸附在磁体粉末的表面上。 为了在不降低磁性的情况下赋予稀土类磁铁粉末抗氧化性，请在自然干燥气氛或惰性气体（例如氮气或氩气）气氛中或在80°C的真空中进行干燥。 在120℃加热是理想的。 当使用加热干燥时，干燥时间通常为20分钟至2小时，尽管其取决于稀土磁体粉末的量。 当具有在表面上聚集的含颜料的处理液作为附聚物的稀土磁体粉末被附聚时，期望预先将其粉碎然后干燥。 含有颜料的处理液附着在表面上的稀土类磁铁粉末可以通过将含有颜料的处理液喷雾到稀土类磁铁粉末上而得到。\n\n  【0038】如上所述，在稀土类磁铁粉末的表面上形成的含有颜料作为主要构成成分的被覆层使磁铁粉末具有优异的耐氧化性。 粘附层不是基于涉及磁铁粉末成分的化学反应而形成的，而是由通过分子间力吸附在磁铁粉末的表面上的纳米级颜料粒子形成的。\n\n 因此，如果在形成过程中改变了磁体粉末的磁性能并且磁体粉末的磁性能劣化，则没有问题。 因此，通过使用本发明的抗氧化稀土磁体粉末，可以制造具有优异的抗氧化性和高磁性能的稀土池塘磁体。\n\n  【0039】此外，使用本发明的耐酸性稀土类磁体粉末制造的稀土类粘结磁体仅具有优异的抗氧化性，因此具有优异的抗氧化性。 通常，在磅磁体的模制期间，由于磁体粉末的流动性不足，磁体粉末可能由于模制压力而破裂，​​并且可能出现容易被氧化的颗粒破裂表面。 在使用挥发性稀土磁体粉末的情况下，形成在磁体粉末的表面上形成的粘附层的颜料颗粒发挥润滑作用以改善粘结磁体成型期间磁体粉末的流动性。 因此，推测可以抑制由于成型压力引起的磁性粉的龟裂而形成容易氧化的粒子断裂面。\n\n  【0040】作为稀土磅磁体的成型方法，可采用压缩成型方法或将压缩成型与压缩成型结合使用（例如，F。Yamashita，稀土磁体在小型电机行业中的应用）  pp.100-111，第17届国际研讨会论文集，《稀土磁铁及其应用》，2002年8月18日至22日，美国特拉华州纽瓦克，GC Hadjipanayis和MJ Bonder编辑，Rinton出版社）。 通常，在生产的池塘磁体的表面上有无数的孔，但是在使用本发明的耐酸稀土类磁体粉末生产的稀土类粘结磁体中，例如 具有构成在磁体粉末的表面上形成的粘附层的颜料颗粒密封孔的效果，这也是通过使用本发明的抗氧化稀土磁体粉末而产生的。 认为稀土类粘结磁体有助于优异的抗氧化性。\n\n  根据本发明，具有平均粒径（长轴）较小（例如200m或更小）的稀土磁体粉末，例如具有约80μm至100zm的平均粒径的稀土磁体化合物。 磁各向异性的HDDR（氢加氢-）是通过在氢气中加热金使氢吸留，脱氢然后冷却而获得的。 \n\n磁性粉末（参见日本专利公开号6-8 2 5 7 5）在磁性粉末的表面附近不会劣化，因此磁性质劣化。 可以赋予优异的耐酸性和耐压印性而不会引起 稀土磁体粉末可以通过本身已知的方法例如酸洗，脱脂和洗涤进行预处理。\n\n  【0042】本发明的抗氧化稀土磁体粉末是通过在稀土磁体粉末的表面上形成的一层或多层涂膜在最外表面上包含颜料作为主要成分的被粘物层。 可能包括在内。 这样的耐氧化稀土类磁铁粉末例如可以通过将在表面具有一层以上的涂层的稀土类磁铁粉末与含颜料的处理液混合，然后在最外表面添加含颜料的处理液而得到。 它可以通过干燥磁铁粉末来生产。 例如，在JP-A-64-131304和JP-A-7-278062中描述了在其表面上形成有一层或多层涂层的稀土磁体粉末的实例。 其实例包括在其表面上形成有无机磷酸化合物膜的稀土类磁体粉末，该无机磷酸化合物膜是耐酸膜。 此外，形成在稀土磁体粉末的表面上的膜不限于无机磷酸盐化合物膜，而是诸如铝膜和锌膜的金属膜，诸如聚酰亚胺膜的树脂膜和其他已知的抗氧化性。 可能是电影。 此外，它可以是由多个涂层组成的层压涂层。 如上所述，形成在以颜料为主要成分的稀土类磁铁粉末的最表面上的涂层即使在其下形成的涂层的耐氧化性不足也具有效果。 有效补充或增强抗氧化作用。\n\n  【0043】通过本身已知的方法将本发明的抗氧化稀土磁体粉末与树脂粘合剂一起制成稀土粘结磁体的化合物。 树脂粘合剂包括环氧树脂，酚醛树脂，三聚氰胺树脂等热固性树脂，聚酰胺\n\n  【0044】（尼龙6 6或尼龙6或尼龙12等），聚乙烯，聚丙烯，聚氯乙烯，聚酯，热塑性树脂，例如聚苯硫醚，橡胶或​​雌激素 F. Yamashi ta，稀土磁体在小型电机行业中的应用 ，第100-111页，第十七届国际会议论文集\n\n 研讨会，稀土磁体及其应用，2002年8月18日至22日，美国特拉华州纽瓦克，由G. C. Had] ipanayis和M. J. Bonder编辑，Rinton出版社）。 理想的是，化合物中树脂粘合剂与耐酸稀土磁铁粉末的配合比例的上限为3重量％。 当获得该化合物时，可以以通常使用的量添加添加剂，例如偶联剂，润滑剂和固化剂。\n\n  【0045】使用本发明的耐氧化稀土磁体粉末的稀土粘结磁体是通过将如上所述制备的稀土粘结磁体用化合物进行压缩成型，注射成型或挤出成型而获得的。 将其模制成预定形状并商品化。 例如，在进行压缩成型的情况下，压缩成型方法可以是常用的压缩成型方法，也可以是将压缩成型和辊压成型组合的成型方法（例如，F.Yamashita，上述稀土的应用）。 小型电动机用磁体，第100-111页，第17届国际研讨会论文集，稀土磁体及其应用，2002年8月18日至22日，美国特拉华州纽瓦克，GC Hadj ipanayis和MJ Bonder编辑，林顿 （请参阅新闻）等\n\n  【0046】通过压缩和模制稀土粘结磁体用化合物，将形成在磁体粉末最外表面上形成粘附层的颜料压入并填充在磁体粉末的颗粒之间。 通过这样做，可以减少在粘结磁体的表面和内部出现空隙。 化合物的压缩成型优选在0.1GPa至1GPa的压力下进行，更优选在0.3GPa至0.6GPa的压力下进行。 当压力小于0.1GPa时，由于压力太小而不能充分实现粘结磁体的高密度，因此可以有效地减少空穴的产生。 另一方面，如果压力超过1GPa，则压力可能会过​​高并且磁体粉末可能断裂并且可能产生新的断裂表面。 成型温度通常取决于树脂粘合剂的种类，通常为室温（20℃）〜120℃。 为了减小磁体粉末的颗粒之间以及磁体粉末的颗粒与树脂粘合剂之间的摩擦，以形成高密度池磁体，并且还形成在磁体粉末的最外表面上形成的粘附层。 为了提高颜料的流动性，使颜料可以平稳地推入磁铁粉末的颗粒之间并易于填充，成型温度为8\n\n 期望温度为0℃至10℃。\n\n  【0047】当将热固性树脂用作树脂粘合剂时，最后，将获得的成型体加热固化以获得稀土类磅磁铁。 成型体的热固化可以根据常规方法进行，例如，在惰性气体（氮气，氩气等）的气氛中或在140℃的空气中（200℃进行1〜5小时）。 你可以进去\n\n  【0048】为了使本发明制造的稀土类粘结磁铁具有进一步的耐腐蚀性，在其表面上以单层或叠层的形式形成有树脂覆膜，电镀覆膜等各种覆膜。 不用说这还可以。 例\n\n  【0049】在下文中，将参考实施例更详细地描述本发明，但是本发明不应解释为限于此。 通过高频熔化形成以下实例：Ndl 2.8原子％，Dy 1.0原子％，B 6.3原子％，Co 14.8原子％，Ga O. 5原子％。 在Zr为0.09原子％的情况下，准备余量的Fe，并在氧浓度为0.5％以下的氩气气氛中在1100℃的氩气气氛中进行24小时退火。 将平均粒径为100 m的研磨粉在0.15 MPa的氢气加压气氛中在870°C的温度下进行3小时的氢化热处理，然后减压（1 kP a）氩气。 使用通过在流动的空气中在850℃下脱氢1小时然后冷却而制备的HDD R磁体粉末（平均晶粒尺寸为0.4m）。\n\n  【0050】示例I\n\n  【0051】（示例A）\n\n  【0052】实验1：制造抗氧化的HDD R磁铁粉\n\n  【0053】使用17重量％的无机颜料，炭黑（平均粒径：0.08m）和15重量％的水溶性环氧羧酸盐作为有机分散介质。 调节至0.2以制备水性处理液（粘度10 cP）。\n\n  【0054】在室温下将50g的HDD R磁粉浸入50ml的处理液中3分钟，混合并搅拌，并使用洒水器在减压下过滤处理的磁粉30秒并过滤。 然后，将其加热并在真空中于100℃干燥1小时。 砂浆获得的骨料\n\n 通过粉碎，制造了在表面具有以炭黑为主要成分的被粘物层的黑色抗氧化HDD R磁铁粉末。\n\n  【0055】对以这种方式制造的1 g抗氧化HDDR磁体粉末进行加热测试，其中将其在150°C的空气中加热100小时，并将测试后由于氧化引起的重量增加率与测试前进行比较。 被测量。 结果示于表1。\n\n  【0056】实验2：池塘磁铁的制造及其特性\n\n  【0057】以100∶3的重量比将环氧树脂和酚基固化剂溶解在甲乙酮中以制备树脂溶液。 将耐酸的HD DR磁体粉末和在实验1中制造的树脂溶液均匀地混合，使得树脂溶液的重量与抗氧化的HDD R磁体粉末和树脂溶液的总重量的比率为3％。 将甲基乙基酮在室温下蒸发以获得用于稀土基粘结磁体的粉末状颗粒化合物。 将获得的稀土类池塘磁铁用化合物压缩成型（100℃温磁场成型，Hex ＝ 0.96MA / m，0.6GPa），并使所得成型体经受150℃。 在氩气气氛中加热1小时以固化环氧树脂，并测量长度12。OmmX宽7.6mmX高度7.4mm，密度为5.9厘米3 被制造。\n\n  【0058】对所制造的池塘用磁铁进行加热试验，在大气中在150℃下加热100小时，并测定该试验前后的氧化引起的重量增加率。 另外，在将池塘磁铁磁化后，进行在空气中100℃下加热500小时的加热试验和在空气中150℃下加热100小时的加热试验。 测定试验前后的磁通劣化率（不可逆退磁率）。 进而，对在空气中在150℃下加热了100小时的加热试验后的粘结磁铁进行再磁化，并测定了加热试验前的再磁化后的磁通劣化率（永久退磁率）。 这些结果显示在图1和2以及表2中。\n\n  【0059】（示例B）\n\n  【0060】实验1：生产抗氧化的HDD R磁铁粉\n\n  【0061】包含17重量％的阴丹士林（平均粒径0.062m）作为有机颜料和15重量％的水溶性环氧羧酸盐作为有机分散介质。 将其调节至7.2以制备水性处理液（粘度15cP）。 \n\n使用该处理液，与实施例A的实验1同样地，制作在表面具有以茚三蒽为主成分的被粘物层的靛蓝色耐酸HDD R磁铁粉末。  .. 对以这种方式生产的抗氧化HDD R磁体粉末进行与实施例A的实验1中相同的加热测试，并且在测试之前和之后测量由于烟灰引起的重量增加率。 结果示于表1。\n\n  【0062】实验2：粘结磁铁的生产及其特性\n\n  【0063】使用实施例1中制备的耐酸和防碎HDDR磁体粉末，以与实施例A的实验2相同的方式制造池塘磁体。 对由此制造的粘结磁体进行类似于实施例A的实验2的各种测试。 这些结果显示在图1和2以及表2中。  （范例C）\n\n  【0064】实验1：制造抗氧化的HDD R磁铁粉\n\n  【0065】含有17重量％的作为有机颜料的铜酞菁（平均粒径为0.06μm），和15重量％的作为有机分散介质的水溶性环氧羧酸盐。 调节至7.2后，制备水性处理液（粘度17cP）。 使用该处理液，与实施例A的实验1同样地，制作了在表面具有以铜酞菁为主要成分的被粘物层的蓝色耐氧化HDD R磁铁粉末。 对由此制造的抗氧化HDD R磁体粉末进行与实施例A的实验1中相同的加热测试，并且在测试之前和测试之后测量由于氧化引起的重量增加率。 结果示于表1。\n\n  【0066】实验2：粘结磁体的制造及其特性\n\n  【0067】使用实验1中制造的耐氧化HD D R R磁铁粉末，与实施例A的实验2同样地制造磅磁铁。 对如此制造的池塘磁铁进行类似于实施例A的实验2的各种测试。 这些结果显示在图1和2以及表2中。\n\n  【0068】（示例D）\n\n  【0069】实验1：生产抗氧化的HD D R磁铁粉\n\n  【0070】一种颜料，其包含作为有机颜料的17重量％的阴丹士林（平均粒径0.06μm）和15重量％的基于丙烯酸酯聚合物的聚合物分散介质作为有机分散介质。 制备醇溶液处理液（粘度30cP）。\n\n  【0071】使用该处理溶液，阴丹士林的主要组成与实施例A的实验1相同。\n\n 制造了在其表面具有被粘物层作为成分的靛色耐氧化HDD R磁铁粉末。 对由此产生的所谓的耐酸性HD D R磁体粉末进行与实施例A的实验1中相同的加热测试，并且在测试之前和之后测量由于酸引起的重量增加率。 结果示于表1。\n\n  【0072】实验2：池塘磁铁的制造及其特性\n\n  【0073】使用实施例1中制备的耐酸和浅浅的HD D R磁体粉末，以与实施例A的实验2中相同的方式制造了池塘磁体。 对如此制造的池塘磁铁进行类似于实施例A的实验2的各种测试。 这些结果显示在图1和2以及表2中。  （示例E）\n\n  【0074】实验1：生产抗氧化的HD D R磁铁粉\n\n  【0075】作为颜料，包括无机颜料的17重量％，Power Pump Rack（平均粒径：0.08m）和作为有机分散介质的丙烯酸酯聚合物类聚合物分散介质15重量％。 制备乙醇处理液（粘度28cP）。\n\n  【0076】使用该处理液，与实施例A的实验1同样地，得到具有以碳黑为主要成分的被粘物层的耐黑色氧化HD DR磁铁粉末。 被制造。 对由此制得的抗氧化HD D R磁体粉末进行与实施例A的实验1中相同的加热测试，并且在测试之前和测试之后测量由于氧化引起的重量增加率。 结果示于表1。\n\n  【0077】实验2：池塘磁铁的制造及其特性\n\n  【0078】使用实施例1中制备的耐酸的HD D R磁体粉末，以与实施例A的实验2中相同的方式制备了池塘磁体。 对如此制造的池塘磁铁进行类似于实施例A的实验2的各种测试。 这些结果显示在图1和2以及表2中。  （比较示例）\n\n  【0079】对未进行表面处理的HD DR磁铁粉末进行与实施例A的实验1相同的加热试验，并在试验前后测定了因烟灰引起的重量增加率。  .. 结果示于表1。 另外，使用未进行任何表面处理的HD D R磁铁粉末，与实施例A的实验2同样地制造了池塘磁铁。 对由此制造的池塘磁体进行类似于示例A的实验2的各种测试。 结果显示在图1、2和表2中。\n\n 抗氧化HDDR磁铁粉重量增加率>>）\n\n  【0080】示例A 0.05\n\n  【0081】实施例B 0.05\n\n  【0082】示例G 0.06\n\n  【0083】示例D 0.04\n\n  【0084】示例E 0.04\n\n  【0085】比较例（未处理粉末）0.30表2\n\n  【0087】（n ＝ 3）由表1可知，实施例A〜E中制造的耐酸性HDDR磁铁粉末是未经表面处理的HD DR磁铁粉末。 发现由于氧化引起的重量增加率远小于上述的增加率，并且这些磁体粉末具有优异的抗氧化性。\n\n  【0088】此外，从图1，图2和表2清楚可见，由于酸度，实施例A至E的粘结磁体比对比例的粘结磁体具有更高的重量增加率。 劣化率也很小。 实施例A至E的粘结磁体具有如此优异的性能的原因是，通过使用具有优异的抗氧化性的HD DR磁体粉末将它们形成为预定形状。 除了\n\n 基于这样的事实，通过抑制在模制期间和模制之后的压缩模制期间由于磁体粉末的破裂而引起的表面损伤，可以有效地防止酸损害。 而且，通过用扫描电子显微镜观察这些池状磁铁的表面，可以确认用被粘结磁铁的树脂粘合剂固定的颜料颗粒将孔密封。 认为这种效果也有助于这些粘结磁体的优异的抗氧化性。  ·\n\n  【0089】评估A：磅磁铁表面上存在的孔数。\n\n  【0090】对于实施例A，实施例B和比较例中的三种磅型磁铁，将纵向12.OmmX高度7.4mm的表面在高度方向上等分为7个区域并压缩。 从上方向到下方向进行编号，并且用电子显微镜观察每个区域的表面。 计算每个区域中存在的直径为20μm或更大的孔的数量，以及每1mm的数量2 结果如图3所示。 从图3可以明显看出，实施例A和B的池塘磁铁的孔比比较例的池塘磁铁少得多。\n\n  【0091】评价B：池塘磁铁在水中的浸入时间与重量变化率之间的关系\n\n  对于实施例A，实施例B和比较例中的三种粘结磁体，研究了浸入水中的时间与重量变化率之间的关系。 结果如图4所示。 从图4清楚可见，实施例A和B的池塘磁体的重量变化率比比较例的池塘磁体小得多。 另外，在比较例中，通过将磅磁铁密封而得到的磅磁铁的重量变化率是实施例A和B中的磅磁铁的重量变化率与比较例中的磅磁铁的重量变化率之间的中间值。 大都会 这些结果表明，在对比例中，通过对池塘磁体进行密封处理的池塘磁体有效地处理了磁体表面上的空隙，但是没有充分处理磁体内部的空隙。 另一方面，认为实施例A和B的池塘磁体不仅能够减少磁体表面上的空隙的产生，而且还能够减少内部空隙的产生。\n\n  【0093】注：比较例中粘结磁铁的密封方法”\n\n  【0094】将比较例中的粘结磁铁浸入在实施例A的步骤1中制备的水性处理液中，并在减压下将处理液浸渍在压力保持在0.5Pa的真空容器中。 出租后\n\n 将真空容器的内部恢复至常压，取出池塘磁铁，用水洗涤池塘磁铁的表面以除去过量的处理液，然后将气氛在120℃下干燥20分钟。\n\n  【0095】示例H\n\n  【0096】（示例A）\n\n  【0097】实验1：制造抗氧化的HDD R磁铁粉\n\n  【0098】将磷酸浓度为0.09mo 1 ZL 30 Om 2； iHDDR磁体粉末的乙醇溶液在室温下浸渍100g 3分钟，混合并搅拌，并且将处理过的磁体粉末用吸水器洗涤。 将混合物在减压下过滤30秒，然后在真空中于120℃加热30分钟进行过滤，从而在HD DR磁体粉末的表面上形成无机磷酸化合物涂膜。\n\n  【0099】含有17重量％的有机颜料，酞菁铜（平均粒径：0.06μm）和15重量％的水溶性环氧羧酸盐作为有机分散介质，氨的pH为7％。  .2制备水性处理液（粘度17 cP）。 将50g表面形成有无机磷酸化合物涂层的HDD R磁铁粉末在室温下浸入5 Om 1的处理溶液中3分钟，混合并搅拌，然后使用喷水喷雾器施加处理过的磁铁粉末。 将混合物在减压下过滤30秒并通过过滤收集，然后通过在100℃真空加热1小时干燥。 通过在研钵中粉碎所获得的附聚物，通过最外表面的无机磷酸盐化合物涂层形成具有以酞菁铜为主要成分的被粘物层的靛蓝色耐氧化HDD R磁铁粉末。 被制造。\n\n  【0100】对以这种方式生产的1g抗氧化HDDR磁体粉末进行加热测试，其中将其在空气中在150°C下加热100小时，并将测试之后由于氧化引起的重量增加率与测试之前进行比较。 被测量。 结果示于表3。\n\n  【0101】实验2：池塘磁铁的制造及其特性 \n\n【0102】以100∶3的重量比将环氧树脂和酚类固化剂溶解在甲乙酮中以制备树脂溶液。 将实验1中制备的抗氧化HDDR磁体粉末和树脂溶液均匀地混合，使得树脂溶液的重量相对于抗氧化HDDR磁体粉末和树脂溶液的总重量的比率为3％，然后 在室温下蒸发乙二酮以获得用于稀土基粘结磁体的粉状颗粒化合物。 得到了\n\n 将稀土类磅磁铁用化合物压缩成型（10 O：在热磁场中成型，Hex = 0.96MA / m 0.6 GPa），然后将所得成型体进行150℃的成型。 通过在C的氩气气氛中加热1小时来使环氧树脂硬化，其尺寸为12. Omm×W 7.6mm×H 7.4mm，密度为5.9g / cm3 制造了磅磁铁。\n\n  【0103】对所制造的池塘用磁铁进行加热试验，将其在空气中在150℃下加热100小时，并在该试验前后测定由氧化引起的重量增加率。 另外，将池塘磁铁磁化后，进行在空气中100℃下加热500小时的加热试验和在空气中15Ot下加热100小时的加热试验。 测定试验前后的磁通劣化率（不可逆退磁率）。 进而，对在空气中在150℃下加热了100小时的加热试验后的粘结磁铁进行再磁化，并测定了再磁化前后的磁通劣化率（永久退磁率）。 这些结果如图5，图6和表4所示。\n\n  【0104】（示例B）\n\n  【0105】实验1：制造抗氧化的HDD R磁铁粉\n\n  【0106】一种颜料，其包含17重量％的有机颜料，阴丹士林（平均粒径：0.06m）和15重量％的基于丙烯酸酯聚合物的聚合物分散介质作为有机分散介质。 制备酒精处理液（粘度为30 cP）。\n\n  【0107】使用该处理溶液，以与实施例A的实验1相同的方式，通过无机磷酸化合物涂层在最外表面上形成包含茚满蒽酮作为主要成分的粘附层。 制造了靛蓝色的抗氧化HDD R磁铁粉。 对由此制得的抗氧化HDD R磁体粉末进行与实施例A的实验1中相同的加热测试，并且测量在测试之前和之后由于氧化引起的重量增加率。 结果示于表3。\n\n  【0108】实验2：池塘磁铁的制造及其特性\n\n  【0109】使用实施例1中制造的耐酸性HD D R磁铁粉末，以与实施例A的实验2相同的方式制造了池塘用磁铁。 对如此制造的池塘磁铁进行类似于实施例A的实验2的各种测试。 这些结果如图5，图6和表4所示。\n\n  【0110】（示例C）\n\n  【0111】实验1：制造抗氧化的HDD R磁铁粉\n\n 将HD DR磁体粉末（100g）在室温下浸入300mL磷酸二氢钠水溶液（0.14mo 1 ZL）中3分钟，混合并搅拌，并将处理过的磁体粉末与吸气器混合。 将其用于真空过滤30秒，并通过过滤收集沉淀物，然后在真空中于120℃加热干燥30分钟，以在HD DR磁体粉末的表面上形成无机磷酸盐化合物膜。\n\n  【0112】使用与实施例A的实验1中使用的处理液相似的处理液，以与实施例A的实验1中相同的方式通过无机磷酸化合物涂膜主要包含铜酞菁。 靛蓝色，耐酸和抗硫化的HD DR磁铁粉末，其被粘物层为 对以这种方式制造的抗氧化HDD R磁体粉末进行与实施例A的实验1中相同的加热测试，并且在测试之前和之后测量由于烟灰引起的重量增加率。 结果示于表3。\n\n  【0113】实验2：池塘磁铁的制造及其特性\n\n  【0114】使用实验1中制造的抗氧化HD D R磁体粉末，以与实施例A的实验2中相同的方式制造了磅磁体。 对如此制造的池塘磁铁进行类似于实施例A的实验2的各种测试。 这些结果如图5，图6和表4所示。  （示例D）\n\n  【0115】实验1：生产抗氧化的HD D R磁铁粉\n\n  【0116】使用与实施例B的实验1中使用的处理液相似的处理液，阴丹士林是通过无机磷酸盐化合物膜的主要成分，与实施例C的实验1相同。 产生了在最外表面具有被粘物层的靛蓝色的耐酸性和抗HD DR磁体粉末。 对由此制得的抗氧化HD D R磁体粉末进行与实施例A的实验1中相同的加热测试，并且测量在测试之前和之后由于氧化引起的重量增加率。 结果示于表3。\n\n  【0117】实验2：池塘磁铁的制造及其特性\n\n  【0118】使用实验1中制造的抗氧化HD D R R磁体粉末，以与实施例A的实验2中相同的方式制造了磅磁体。 对由此制造的池塘磁体进行类似于示例A的实验2的各种测试。 这些结果如图5，图6和表4所示。\n\n  【0119】（示例E）\n\n  【0120】实验1：生产抗氧化的HD D R磁铁粉\n\n 通过本身已知的真空沉积方法，在HDDR磁体粉末的表面上形成0.3m厚的A 1涂层。\n\n  【0121】使用与实施例A的实验1相同的处理液，与实施例A的实验1同样地以酞菁铜为主要成分通过A 1膜进行蒸镀。 制备了在最外表面具有层的靛色且耐酸的HDDR磁体粉末。 对由此产生的耐酸性HDDR磁体粉末进行与实施例A的实验1中相同的加热测试，并且在测试之前和之后测量由于酸引起的重量增加率。 结果示于表3。\n\n  【0122】实验2：池塘磁铁的制造及其特性\n\n  【0123】使用在实验1中制造的抗氧化HDDR磁体粉末，以与实施例A的实验2中相同的方式制造了磅磁体。 对如此制造的池塘磁铁进行类似于实施例A的实验2的各种测试。 这些结果如图5，图6和表4所示。  （比较例1）\n\n  【0124】对于未进行任何表面处理的HDDR磁体粉末，进行与实施例A的实验1相同的加热试验，测定试验前后的氧化引起的重量增加率。 结果示于表3。 另外，使用未进行任何表面处理的HDDR磁体粉末，以与实施例A的实验2相同的方式制造了池塘磁体。 对由此制造的池塘磁体进行类似于示例A的实验2的各种测试。 结果显示在图5和6以及表4中。\n\n  【0125】（比较示例2）\n\n  【0126】对在实施例A的实验1中制造的表面上形成有无机磷酸化合物膜的HDDR磁体粉末进行与实施例A的实验1相同的加热试验。 测量了由于氧化引起的重量增加率。 结果示于表3。 另外，使用该H DDR磁体粉末，以与实施例A的实验2相同的方式制造了磅磁体。 对由此制造的粘结磁体进行类似于实施例A的实验2的各种测试。 这些结果如图5，图6和表4所示。\n\n  【0127】（比较示例3）\n\n  【0128】对在实施例C的实验1中形成的表面上形成有无机磷酸盐化合物膜的HDDR磁体粉末进行与实施例A的实验1相同的加热试验。\n\n 之后，测量由于酸引起的重量增加率。 结果示于表3。 使用该H D D R磁铁粉末，与实施例A的实验2同样地制造池塘磁铁。 对由此制造的粘结磁体进行类似于实施例A的实验2的各种测试。 这些结果如图5，图6和表4所示。\n\n  【0129】（比较示例4）\n\n  【0130】对于在实施例E的实验1中制造的表面上形成有A 1涂层的HD DR磁铁粉末，进行与实施例A的实验1相同的加热试验，并进行该试验前后的试验。 测量由于烟灰引起的重量增加率。 结果示于表3。 使用该HD D R磁铁粉末，与实施例A的实验2同样地制造池塘磁铁。 对以这种方式制造的池塘磁体进行类似于示例A的实验2的各种测试。 结果如图5，图6和表4所示。 表3\n\n  【0131】抗氧化HDDR磁体粉末重量增加率（％）\n\n  【0132】比较例1（未处理粉末）0.30\n\n  【0133】比较例2 0.01\n\n  【0134】比较例3 0.01\n\n  【0135】比较例4 0.01\n\n  【0136】示例A 0.01\n\n  【0137】示例B 0.01\n\n  【0138】实施例C 0.01\n\n  【0139】示例D 0.01\n\n  【0140】实施例E 0.01\n\n 表4\n\n  【0142】（n ＝ 3）由表3可知，实施例A〜E中制造的耐氧化HDDR磁铁粉末和比较例2〜4中制造的表面被覆HD。 发现与未进行任何表面处理的比较例1的HD DR磁体粉末相比，DR磁体粉末由于氧化而具有的重量增加率小得多，并且这些磁体粉末具有优异的抗氧化性。\n\n  【0143】但是，如从图5和图6以及表4清楚可见的，由于烟灰，比较例2至4中的粘结磁体具有与比较例1中的粘结磁体相同的重量增加。 添加率和磁通劣化率显着。 另一方面，实施例A至E的池塘磁体的重量增加率和由于氧化引起的磁通量劣化率均低于比较例1的粘结磁体。 实施例A至E中的粘结磁体表现出如此优异的特性的原因在于，通过使用具有优异的抗氧化性的HD DR磁体粉末将它们形成为预定形状。 另外，与比较例2至4的粘结磁体不同，即使在化合物制备期间的压缩成型，成型为预定形状以及成型之后，也抑制了由于磁体粉末的破裂而引起的表面损伤。 基于这样的事实，氧化有效地防止了氧化。 另外，当用扫描电子显微镜观察实施例A至E中的粘结磁体的表面时，孔为 \n\n可以确认，这些粒子被由粘结磁铁的树脂粘合剂固定的颜料粒子密封。 认为这种效果也有助于这些粘结磁体的优异的抗氧化性。 工业可用性\n\n  【0144】本发明提供了耐氧化性的稀土类磁铁粉末，其制造方法以及稀土类粘结磁铁，它们可用于制造具有优异的耐氧化性和高磁特性的稀土类磅磁铁。 具有工业适用性，因为它可以提供用于稀土类粘结磁体的化合物及其制备方法。');
INSERT INTO `os_patent_instruction_text` VALUES (13012, 22841, '【技術分野】\n\n【0001】\n\nこの発明はプレス成形装置およびプレス成形方法に関し、より特定的には、最終製品の形状に近いニアネットな状態に粉末をプレスして成形体を得る、プレス成形装置およびプレス成形方法に関する。\n\n【背景技術】\n\n【0002】\n\n自動二輪や四輪車の発動機、リニアコンプレッサ、燃料ポンプなどの様々な用途に、薄肉の弓形磁石が広く供されている。\n\n当該弓形磁石用の成形体は、平行磁界中プレスによって得られることが多く、図17に示すように、ダイ表面と面一になるように粉末がキャビティに供給(ストレート摺り切り給粉)され、曲面状(R形状)のパンチ面を有する上下パンチを用いて成形体がプレス成形されていた。\n\n【0003】\n\nしかしこの場合、キャビティにおいてダイの壁面近傍と中央部とでは粉末の充填比が大きく異なるため、成形体内部の密度ばらつきが避けられない。その結果、成形体内部の密度ばらつきに起因する焼結収縮率の差異や成形不良によって焼結体の反りや変形を避けることができない。\n\n【0004】\n\nまた、本件出願人は特許文献1において、パンチのパンチ面の面取り幅を特定したり、パンチ面の面粗度を特定することによって、製品のひびや割れを防止して生産性を向上できる成形装置等を提案している。\n\n【特許文献1】特開2001-58294号公報\n\n【発明の開示】\n\n【発明が解決しようとする課題】\n\n【0005】\n\nしかし、特許文献1に開示する技術は、面取り部を有する特定形状の成形体に好適に用いられるものであって、様々な形状の成形体の形成に用いられるものではない。\n\nそれゆえに、この発明の主たる目的は、様々な形状の成形体を成形性よく形成することができる、プレス成形装置およびプレス成形方法を提供することである。\n\n【課題を解決するための手段】\n\n【0006】\n\n上述の目的を達成するために、請求項1に記載のプレス成形装置は、異形状の成形体を得るためのプレス成形装置であって、ダイホールを有するダイ、ダイホール内に嵌入される下パンチ、少なくともダイホールと下パンチとによって形成されるキャビティに、充填比が位置に拘わらず略均一になるように粉末を充填するための給粉装置、およびキャビティに充填された粉末を下パンチとともにプレスするための上パンチを備え、上パンチおよび下パンチの少なくともいずれか一方のパンチ面は非平面状に形成され、給粉装置は、給粉箱本体および給粉箱本体に設けられ粉末を摺り切るためのガイドを有する摺り切り給粉用の給粉箱を含み、ダイの主面に給粉箱のガイドが摺動するためのレールが形成され、レールは、キャビティの上部を構成するためにダイホールの上方に形成される貫通孔を有し、レールの上面およびガイドは形成すべき成形体の上面形状に応じて形成され、貫通孔は、レールによって取り囲まれるようにレールの中に形成されることを特徴とする。\n\n【0007】\n\n請求項2に記載のプレス成形装置は、請求項1に記載のプレス成形装置において、下パンチのパンチ面が凸状に形成され、上パンチのパンチ面が凹状に形成され、給粉装置が粉末をキャビティに上面凸状に供給することを特徴とする。\n\n【0008】\n\n請求項3に記載のプレス成形装置は、請求項1に記載のプレス成形装置において、下パンチのパンチ面が凹状に形成され、上パンチのパンチ面が凸状に形成され、給粉装置が粉末をキャビティに上面凹状に供給することを特徴とする。\n\n【0009】\n\n請求項4に記載のプレス成形装置は、請求項1に記載のプレス成形装置において、下パンチのパンチ面および上パンチのパンチ面がともに凹状に形成されることを特徴とする。\n\n【0011】\n\n請求項5に記載のプレス成形装置は、請求項1に記載のプレス成形装置において、ガイドは給粉箱本体に着脱可能に設けられることを特徴とする。\n\n【0012】\n\n請求項6に記載のプレス成形装置は、請求項1に記載のプレス成形装置において、給粉箱の内部に設けられかつ形成すべき成形体の上面形状に応じて構成されるシェーカを含むことを特徴とする。\n\n【0013】\n\n請求項7に記載のプレス成形方法は、ダイホールを有するダイと、ダイホールに嵌入される下パンチと、少なくともダイホールと下パンチとによって形成されるキャビティに粉\n\n末を充填するための給粉装置と、キャビティに充填された粉末を下パンチとともにプレスするための上パンチとを用いて異形状の成形体を形成するためのプレス成形方法であって、充填比が位置に拘わらず略均一になるように給粉装置によって粉末をキャビティに充填する第1工程、およびキャビティに充填された粉末を上パンチと下パンチとによってプレスして充填比が位置に拘わらず略均一な異形状の成形体を得る第2工程を備え、給粉装置は、給粉箱本体および給粉箱本体に設けられ粉末を摺り切るためのガイドを有する摺り切り給粉用の給粉箱を含み、ダイの主面に給粉箱のガイドが摺動するためのレールが形成され、レールは、キャビティの上部を構成するためにダイホールの上方に形成される貫通孔を有し、レールの上面およびガイドは形成すべき成形体の上面形状に応じて形成され、貫通孔は、レールによって取り囲まれるようにレールの中に形成され、第1工程では、給粉箱が下パンチ上まで摺動してキャビティに給粉し、給粉箱が退避するときに形成すべき成形体の上面形状に応じてガイドが粉末を摺り切ることを特徴とする。\n\n【0015】\n\nこの明細書において、「異形状の成形体」とはパンチのパンチ面と接触した主面のうち少なくとも一主面が平面ではない成形体をいう。「非平面状」とは単一平面以外の面形状をいい、たとえば曲面状や段差を有する平面形状などを含む。「充填比」とは、キャビティ内の粉末のプレス後の充填深さに対するプレス前の充填深さの比率をいい、(プレス前の充填深さ÷プレス後の充填深さ)で求められる。\n\n【0016】\n\n請求項1に記載のプレス成形装置では、粉末の充填比が位置に拘わらず略均一になるように給粉されるので、上下パンチによってキャビティ内の粉末をプレスすると、位置に拘わらず充填比が殆ど変わらない異形状の成形体が得られ成形体内部の密度も略均一となる。したがって、様々な形状の成形体を良好に形成できる。また、成形体を焼結して得られる焼結体に反りや変形が起こらず、様々な形状の焼結体を良好に形成できる。さらに、摺り切り給粉において、給粉箱が退避するときに形成すべき成形体の上面形状に応じてガイドが粉末を摺り切ることによって、容易に所望の給粉を実現できる。請求項7に記載のプレス成形方法についても同様である。\n\n【0017】\n\n請求項2に記載のプレス成形装置では、上面凸状の成形体を良好に形成でき、請求項3に記載のプレス成形装置では、上面凹状の成形体を良好に形成でき、請求項4に記載のプレス成形装置では、上下両面凸状の成形体を良好に形成できる。\n\n【0019】\n\n請求項5に記載のプレス成形装置では、形成すべき成形体の形状に応じて給粉箱のガイドを取り替えるだけで、給粉箱本体を取り替えることなく様々な上面形状の成形体に対応できる。\n\n【0020】\n\n請求項6に記載のプレス成形装置では、形成すべき成形体の形状に応じてシェーカの形状を設定することによって、給粉装置内の粉末を攪拌しながら所望の給粉を実現できる。\n\n【発明の効果】\n\n【0021】\n\nこの発明によれば、様々な形状の成形体を良好に形成できる。\n\n【発明を実施するための最良の形態】\n\n【0022】\n\n以下、図面を参照してこの発明の実施形態について説明する。\n\n図1および図2を参照して、この発明の一実施形態のプレス成形装置10は、乾式プレスによって上面凸状の弓形形状の成形体を形成するために好適に用いられる。\n\n【0023】\n\nプレス成形装置10は、ダイセット12と、ダイセット12に嵌合されるダイ14と、ダイセット12およびダイ14の上面長手方向(給粉箱28の移動方向)に設けられる一対のレール16と、粉末mを収容しキャビティ26(後述)に粉末mを供給するための給\n\n粉装置18と、キャビティ26内に充填された粉末mを圧縮する下パンチ20および上パンチ22とを含む。\n\n【0024】\n\n各レール16の上面は曲面凸状に形成され、各レール16は、ダイセット12上に形成されるレール部16aおよび16bと、ダイ14上に形成されかつレール部16aと16bとを連接するレール部16cとからなる。この実施形態では、ダイ14とレール部16cとが一体形成されている。また、レール16はダイ14と同一の材質からなるのが好ましく、たとえば高マンガン鋼、超硬合金などからなる。\n\n【0025】\n\nダイ14には上下方向に2つのダイホール14aが形成され、レール部16cにはダイホール14aに対応する位置に貫通孔24が形成される。このようにダイホール14aに貫通孔24を連設することによって、レール部16cおよびダイ14を上下方向に貫通する実質的なダイホールが形成される。このダイホールに下パンチ20が下方から上下動可能に嵌入され、上パンチ22が上方から進退可能に設けられる。下パンチ20のパンチ面20aは曲面凸状に形成され、上パンチ22のパンチ面22aは曲面凹状に形成される。下パンチ20のパンチ面20aは形成すべき成形体Sの内主面S2に合致し、上パンチ22のパンチ面22aは形成すべき成形体Sの外主面S1に合致する(図3参照)。これによって、ニアネットな状態に粉末mをプレスでき、余剰の加工取り代を設ける必要なく後工程での加工工程が省略され、製造コストが低減される。なお、図3を参照して、成形体の外R寸法とは外主面S1の湾曲方向中央部の寸法をいい、成形体の内R寸法とは内主面S2の湾曲方向中央部の寸法をいう。\n\n【0026】\n\nダイホール14aと貫通孔24と下パンチ20のパンチ面20aとによって任意の容積のキャビティ26が形成される。\n\n【0027】\n\n図4をも参照して、給粉装置18は、レール16上を摺動可能な摺り切り給粉用の給粉箱28を含む。給粉箱28内には、粉末mが収納されかつ給粉箱28内を不活性ガス雰囲気に保つように窒素ガスなどの不活性ガスが充填される。給粉箱28は、給粉箱本体30を含み、給粉箱本体30の前面および後面にはガイド32および34が設けられる。\n\n【0028】\n\nガイド32および34によって給粉箱28はレール16に沿って移動可能となる。ガイド32および34は、成形体Sの外主面S1の形状に応じて構成される。ガイド32および34の摺り切り部32aおよび34aの形状によって摺り切り形状が定まる。また、この実施形態では、摺り切り部32aおよび34aは、レール16の上面形状に合致する曲面状に形成され、これによって給粉箱28がレール16上を円滑に摺動できる。さらに、ガイド32および34は給粉箱本体30に着脱自在である。\n\n【0029】\n\n給粉箱28にはコ字状の連結部材36、シリンダロッド38を介してたとえば油圧シリンダやエアシリンダ等のシリンダ40が連結される。したがって、給粉箱28は、シリンダ40によってレール16上を摺動しキャビティ26に対して進退可能とされる。\n\n【0030】\n\n図5からもわかるように、給粉箱28内には複数(この実施形態では2つ)のシェーカ(アジテータともいう)42が設けられる。各シェーカ42は、横部材44とその両端に接続される2つの縦部材46とを有し、横部材44はレール16および形成すべき成形体Sの上面形状に応じて形成され、レール16に対応する部分が上側に凸状に湾曲して形成される。シェーカ42はたとえばステンレス(SUS304)からなる。\n\n【0031】\n\nそして、給粉箱28の前面および後面を貫通して平行に延びる2本の支持棒48に、各縦部材46の上部が接続され、シェーカ42が固定される。2本の支持棒48は給粉箱28内において2本の支持棒50に接続される。2本の支持棒48の両端はそれぞれたとえ\n\nば短冊状の連結材52および54にねじ等で固定される。給粉箱28の後面に取り付けられた固定金具56にエアシリンダ58が固定され、エアシリンダ58のシリンダシャフト60が連結材54に固定される。したがって、エアシリンダ58の両端にエア供給管62から供給されるエアによってシリンダシャフト60が往復運動することによって、シェーカ42が往復運動する。往復回数は粉末の充填量に応じて変更される。\n\n【0032】\n\nさらに、配向手段として、ダイセット12を上下に挟んで一対の磁界発生コイル(図示せず)が設けられ、磁界発生コイルの中心にパーメンジュール等のコアが設けられる。磁界発生コイルに通電することによって、キャビティ26内の粉末mにプレス方向と平行なたとえば1.2Tの配向磁界が印加され、粉末mが配向される。磁界発生コイルから印加される磁界は静磁界であってもパルス磁界であってもよい。\n\n粉末mには希土類磁石合金粉末が用いられる。\n\n【0033】\n\n希土類合金粉末は、たとえばつぎのようにして作製される。まず、急冷法(冷却速度102°C/sec以上104°C/sec以下)による合金の作製法としてストリップキャスト法を用いて、鋳片を作製する。ストリップキャスト法は、たとえば米国特許第5,383,978号に開示されている。具体的には、Nd:26wt%、Dy:5.0wt%、B:1.0wt%、Al:0.2wt%、Co:0.9wt%、Cu:0.2wt%、残部Feおよび不可避不純物からなる組成の合金を高周波溶解によって溶融し、合金溶湯を形成する。この合金溶湯を1350℃に保持した後、単ロール法によって、合金溶湯を急冷し、厚さ0.3mmのフレーク状合金を得る。このときの急冷条件は、たとえば、ロール周速度約1m/秒、冷却速度500℃/秒、過冷度200℃である。\n\n【0034】\n\nこのフレーク状合金を水素吸蔵法によって粗粉砕した後、ジェットミルを用いて窒素ガス雰囲気中で微粉砕すれば、平均粒径が約3.5μmの合金粉末を得ることができる。この窒素ガス雰囲気中の酸素量は10000ppm程度に低く抑えることが好ましい。このようなジェットミルは、特公平6-6728号公報に記載されている。微粉砕時における雰囲気ガス中に含まれる酸化性ガス(酸素や水蒸気)の濃度を制御し、それによって、微粉砕後における合金粉末の酸素含有量(重量)を6000ppm以下に調整することが好ましい。希土類合金粉末中の酸素量が6000ppmを超えて多くなりすぎると、磁石中に非磁性酸化物の占める割合が増加し、最終的な焼結磁石の磁気特性が劣化してしまうからである。\n\n【0035】\n\nこうして得た希土類合金粉末に対して、ロッキングミキサー内で潤滑剤をたとえば0.3wt%添加·混合し、潤滑剤で合金粉末粒子の表面を被覆する。潤滑剤としては、脂肪酸エステルを石油系溶剤で希釈したものを用いることが好ましい。この実施形態では、脂肪酸エステルとしてカプロン酸メチルを用い、石油系溶剤としてはイソパラフィンを好適に用いることができる。カプロン酸メチルとイソパラフィンの重量比は、たとえば1:9とすればよい。\n\n【0036】\n\nなお、潤滑剤の種類は上記のものに限定されるわけではない。脂肪酸エステルとしては、カプロン酸メチル以外に、たとえば、カプリル酸メチル、ラウリル酸メチル、ラウリン酸メチルなどを用いてもよい。溶剤としては、イソパラフィンに代表される石油系溶剤やナフテン系溶剤等を用いることができる。潤滑剤添加のタイミングは任意であり、微粉砕前、微粉砕中、微粉砕後の何れであってもよい。上記液体潤滑剤とともに、ステアリン酸亜鉛などの固体(乾式)潤滑剤を用いてもよい。\n\n【0037】\n\n図6を参照して、プレス成形装置10の動作を説明する。\n\n最初は、図6(a)に示すように、下パンチ20および上パンチ22は上昇端に位置しており、その状態でシリンダ40を作動させて給粉箱28をレール16に沿ってダイ14\n\n方向にスライドさせ 、図6(b)に示すように、給粉箱28を下パンチ20上に位置したときに停止させる。その後、図6(c)に示すように、下パンチ20を下降させることによってダイホール上部にキャビティ26が形成され、このとき、給粉箱28内のシェーカ42をたとえば5〜15往復、水平方向に往復動させながら、給粉箱28内の粉末mをキャビティ26内に落下させむらなく充填していく。粉末mは高密度で充填されないので個々の粒子が動きやすい状態にあるため、比較的低い配向磁界であっても所望の配向を施すことができる。\n\n【0038】\n\n粉末mをキャビティ26内に充填した後、シリンダ40を作動させて給粉箱28を退避させる。このとき、給粉箱28のガイド32および34の摺り切り部32aおよび34aでキャビティ26上の粉末mが摺り切られる。上述のように、ガイド32および34は形成すべき成形体Sの外主面S1の形状に対応して構成されているので、ガイド32および34によって形成すべき成形体Sの上面形状に応じた摺り切りが行われ、図6(d)に示すように、厚みが位置に拘わらず略均一になるように粉末mがキャビティ26に充填される。これによって、粉末mは、充填比が位置に拘わらずほとんど変わらないように(たとえば2.2〜2.5倍程度の充填比になるように)キャビティ26へ充填されている。\n\n【0039】\n\nその後、図6(e)に示すように上パンチ22を降下させキャビティ26に挿入した状態で磁界発生コイルによって配向磁界を発生させつつ、キャビティ26内の粉末mを上パンチ22と下パンチ20とによってプレス成形し、プレス方向の厚みが位置に拘わらず略均一な弓形形状の成形体Sが得られる。そして、図6(f)に示すように、上パンチ22および下パンチ20を上昇させることによって、得られた成形体Sがキャビティ26から抜き出され取り出される。上述の操作を繰り返して粉末mのプレス作業が連続して行われる。\n\n【0040】\n\nこのようにして得られた成形体Sが焼結炉(図示せず)に搬送され、Ar雰囲気の下で1050°Cにて2時間焼結され、さらに600°C、Ar雰囲気中で1時間時効処理され、焼結体たる焼結磁石が得られる。\n\n【0041】\n\nプレス成形装置10によれば、異形状の成形体Sを形成するにあたり、粉末mの充填比が位置に拘わらず略均一になるように給粉されるので、上下パンチ22,20によってキャビティ26内の粉末mをプレスすると、位置に拘わらず充填比が殆ど変わらない成形体Sが得られ成形体内部の密度が略均一となる。したがって、成形後のスプリングバックがあっても、成形体にひびが発生したり成形体がつぶれたりする不良の発生を抑制でき、様々な異形状の成形体を良好に形成できる。\n\n言い換えれば、プレス成形装置10によれば、成形後の形状に近いニアネットな状態に給粉でき、異形状の成形体を良好に形成できる。\n\n【0042】\n\nこのような成形体を焼結して得られる焼結磁石には反りや変形が起こらず、磁気特性のよい焼結磁石を製造することができ、様々な異形状の焼結磁石を良好に形成できる。\n\nまた、摺り切り給粉において、給粉箱28が退避するときに形成すべき成形体Sの上面形状に応じてガイド32および34が粉末mを摺り切ることによって、容易に所望の給粉を実現できる。\n\n【0043】\n\nさらに、形成すべき成形体の形状に応じて給粉箱28のガイドを取り替えるだけで、給粉箱本体30を取り替えることなく様々な上面形状の成形体に対応できる。\n\nまた、形成すべき成形体の形状に応じてシェーカの形状を設定することによって、給粉装置28内の粉末mを攪拌しながら所望の給粉を実現できる。\n\nまた、プレス成形装置10は、希土類合金粉末のような流動性の悪い粉末のプレスに好適に用いられる。\n\n【0044】\n\nついで、一実験例について説明する。\n\nプレス成形装置10を用いニアネット給粉によって得られた成形体と従来方式のストレート摺り切り給粉によって得られた成形体とについて、それぞれのグリーン内密度(焼結前成形体内部の密度)分布を求めた。\n\n【0045】\n\nなお、ニアネット給粉とは図7に示すように、形成すべき成形体に近い状態に給粉することをいい、ストレート摺り切り給粉とは図17に示すように、ダイ表面と面一になるように給粉することをいう。\n\n【0046】\n\nグリーン内密度分布は、図8(a)に示すように、給粉箱28の進行方向に沿った「1」〜「5」とそれらに垂直な「A」〜「E」とによって特定される複数(25個)のエリアについて求められた。\n\n【0047】\n\n図8(b)と(c)とからわかるように、ストレート摺り切り給粉によって得られた成形体よりもニアネット給粉によって得られた成形体の方が、グリーン内密度分布のばらつきが小さく、密度分布が均一となる。\n\n【0048】\n\nまた、ニアネット給粉による成形体とストレート摺り切り給粉による成形体とについて、成形体厚みを2.5mmから4.0mmまで0.5mm刻みで変化させて焼結体を形成し、焼結体の外R寸法および成形性を比較した。\n\n【0049】\n\n図9に示すように、外R寸法の設計寸法(目標寸法)が32mmの場合、ニアネット給粉による焼結体では成形体厚みに拘わらず外R寸法は35mm程度までに収まり設計寸法との差異は殆ど見られないが、ストレート摺り切り給粉による焼結体では成形体厚みが小さくなるに従って外R寸法は大きくなり設計寸法から離れていく。これより、ストレート摺り切り給粉の場合よりニアネット給粉の場合の方が焼結体の変形量が小さくなることがわかる。\n\n【0050】\n\nまた、図10からわかるように、ニアネット給粉の場合の方がストレート摺り切り給粉の場合より焼結体の成形性が良好なことがわかる。ニアネット給粉によれば、成形体厚み3.0mm〜4.0mm程度であれば焼結体を良好に成形できる。\n\n【0051】\n\nさらに、図11(a)にニアネット給粉の場合の成形体およびそれから得られる焼結体を示し、図11(b)にストレート摺り切り給粉の場合の成形体およびそれから得られる焼結体を示す。ここでの製品(焼結体)寸法は、18.7mm(外R)×3mm(厚み)×33.5mm(幅)×L(長さ)である。\n\n【0052】\n\n図12(a)からわかるように、成形体形状において外R寸法、内R寸法ともにニアネット給粉の場合の方がストレート摺り切り給粉の場合より変化率が小さくなり、図12(b)に示すように、面積歩留はニアネット給粉の場合の方がよいことがわかる。なお、面積歩留は、焼結体断面積÷成形体断面積×100で求められる。\n\n【0053】\n\nまた、図13および図14を参照して、この発明の他の実施形態のプレス成形装置10aについて説明する。\n\nプレス成形装置10aは、上面凹状の弓形形状の成形体を形成するために用いられる。\n\nプレス成形装置10aは、上面に曲面凹部を有するレール64と、パンチ面66aが曲面凹状の下パンチ66と、パンチ面68aが曲面凸状の上パンチ68と、形成すべき成形体の上面(凹面)形状に応じて構成されるガイド70,72を有する給粉箱28aと、形成すべき成形体の上面(凹面)形状に応じて構成されるシェーカ74とを用いる。\n\n【0054】\n\nガイド70および72の摺り切り部70aおよび72aの形状によって摺り切り形状が定まり、形成すべき成形体の上面形状に応じた摺り切りが行われ、この実施形態では、粉末mをキャビティ26aに上面凹状に供給できる。また、この実施形態では、摺り切り部70aおよび72aは、レール64の上面形状に合致する曲面状に形成され、これによって給粉箱28aがレール64上を円滑に摺動できる。また、シェーカ74は、レール64に対応する部分が下側に凸状に湾曲して形成された横部材76を有する。\n\n【0055】\n\nこれら以外の点については、プレス成形装置10aはプレス成形装置10と同様に構成されるので、その重複する説明は省略する。\n\nプレス成形装置10aにおいても、プレス成形装置10と同様の効果が得られる。\n\n【0056】\n\nさらに、図15および図16を参照して、この発明のその他の実施形態のプレス成形装置10bについて説明する。\n\nプレス成形装置10bは、上下両面凸状の成形体を形成するために用いられる。\n\nプレス成形装置10bは、上面が曲面凸状の一対のレール78と、パンチ面22aが曲面凹状の上パンチ22と、パンチ面66aが曲面凹状の下パンチ66と、形成すべき成形体の上面(凸面)形状に応じて構成されるガイド80,82を有する給粉箱28bと、形成すべき成形体の上面(凸面)形状に応じて構成されるシェーカ84とを用いる。\n\n【0057】\n\nこの実施形態では、上下両面凸状の成形体を形成する場合において、充填比が位置に拘わらず略均一になるようにキャビティに粉末mを充填すべく、プレス成形装置10の場合よりもキャビティの中央部における粉末mの盛り上がりが大きくなるように粉末mが上面凸状に供給される。そのため、レール78はプレス成形装置10のレール16より大きく盛り上げられ、ガイド80および82の摺り切り部80aおよび82aはプレス成形装置10の摺り切り部32aおよび34aより大きく切欠され、シェーカ84の横部材86のレール78に対応する部分は、プレス成形装置10のシェーカ42のそれより上側に大きく湾曲される。\n\n【0058】\n\nまた、この実施形態においても、摺り切り部80aおよび82aは、レール78の上面形状に合致する曲面状に形成され、これによって給粉箱28bがレール78上を円滑に摺動できる。\n\n【0059】\n\nこれら以外の点については、プレス成形装置10bはプレス成形装置10と同様に構成されるので、その重複する説明は省略する。\n\nプレス成形装置10bにおいても、プレス成形装置10と同様の効果が得られる。\n\n【0060】\n\nなお、この発明は摺り切り給粉に限定されず、個別給粉にも適用できる。\n\nまた、この発明において、パンチのパンチ面は曲面状に限定されず、任意の非平面状であってもよい。\n\n【0061】\n\nさらに、この発明は、上パンチおよび下パンチの少なくともいずれか一方のパンチ面が非平面状であれば適用でき、また、プレス方向の厚みが均一でない弓形形状の成形体やその他の任意の異形状の成形体を形成するために適用できる。\n\n【図面の簡単な説明】\n\n【0062】\n\n【図1】この発明の一実施形態を示す側面断面図解図である。\n\n【図2】図1の実施形態を示すA-A(図1)断面図解図である。\n\n【図3】成形体の一例を示す斜視図である。\n\n【図4】給粉箱の一例を示す斜視図である。\n\n【図5】図1の実施形態のシェーカおよびその近傍を示す斜視図である。\n\n【図6】図1の実施形態の動作の一例を示す図解図である。\n\n【図7】ニアネット給粉を示す図解図である。\n\n【図8】グリーン内密度分布を示す実験結果である。\n\n【図9】成形体厚みと焼結体の外R寸法との関係を示すグラフである。\n\n【図10】焼結体の成形性を示す実験結果である。\n\n【図11】ニアネット給粉およびストレート摺り切り給粉それぞれの成形体断面形状および焼結体断面形状を示す図解図である。\n\n【図12】ニアネット給粉およびストレート摺り切り給粉それぞれの成形体および焼結体の寸法等を示すテーブルである。\n\n【図13】この発明の他の実施形態を示す断面図解図である。\n\n【図14】図13の実施形態で用いられる給粉箱を示す斜視図である。\n\n【図15】この発明のその他の実施形態を示す断面図解図である。\n\n【図16】図15の実施形態で用いられる給粉箱を示す斜視図である。\n\n【図17】従来方式のストレート摺り切り給粉を示す図解図である。\n\n【符号の説明】\n\n【0063】\n\n10,10a,10b      プレス成形装置\n\n14      ダイ\n\n14a      ダイホール\n\n16,64,78      レール\n\n18      給粉装置\n\n20,66      下パンチ\n\n20a,22a,66a,68a      パンチ面\n\n22,68      上パンチ\n\n24      貫通孔\n\n26,26a,26b      キャビティ\n\n28,28a,28b      給粉箱\n\n30      給粉箱本体\n\n32,34,70,72,80,82      ガイド\n\n42,74,84      シェーカ\n\nm      粉末\n\nS      成形体', '【技术领域】\n\n【0001】\n\n压制成型装置和压模方法技术领域本发明涉及一种压模装置和压模方法,更具体地,涉及一种压制成型装置和通过压制粉末在粉末中按压粉末的压制成型方法ninet状态接近最终产品的形状。\n\n发明背景\n\n【0002】\n\n薄壁弧形磁体广泛提供用于各种应用,例如摩托车和四轮车辆,线性压缩机,燃料泵。\n\n用于弧形磁体的模制体通常通过压榨机在平行磁场中获得,并且如图2所示。如图17所示,将粉末供应到腔(直滑进给),以便是侧表面。模制体使用具有弯曲(R形)的冲头表面的垂直冲头压制形成。\n\n【0003】\n\n然而,在这种情况下,由于粉末的填充率在模壁表面的附近和腔中的中心部分之间具有大大差异,因此不能避免模制体内的密度变化。结果,由于模塑主体内部的密度变化和形成缺陷,因此不可能避免由于烧结收缩的差异而导致烧结体的变形。\n\n【0004】\n\n另外,在专利文献1中,在专利文献1中,通过通过指定冲头的冲头的倒角宽度并识别冲头表面的表面粗糙度,通过防止产品的裂缝或破裂可以提高生产率的模制。我们提出了设备等。\n\n日本专利申请公开No.2001-58294\n\n发明的描述\n\n本发明要解决的问题\n\n【0005】\n\n然而,专利文献1中公开的技术优选地适用于具有倒角部分的模制体,并且不用于形成各种形状的模制体。\n\n因此,本发明的主要目的是提供一种能够以良好形状形成各种成形模制品的压制成形装置和压模方法。\n\n[解决问题的手段]\n\n【0006】\n\n为了实现上述目的,根据权利要求1所述的压制成形装置是用于获得不同成形的压块的压制成形装置,具有模具孔的模具,将下冲头插入管孔中,以便按压粉末填充有粉末,使得填充率基本上是均匀的,而不管填充率,至少由模孔和下冲头形成的腔,以用下冲击填充有空腔的粉末压力上冲头和下冲头以非平面形状形成,并且进给器设置在丸盒主体和枕头箱体上并滑动粉末。形成轨道,该轨道包括用于滑动的丸盒带导向器的花粉,引导箱引导件在模具主表面上滑动,轨道是模具孔,以配置腔的顶部更多形成的通孔,轨道的上表面和引导件由待形成的模制体的顶部形状形成。通过轨道形成通孔以被轨道包围它的特点是。\n\n【0007】\n\n3.根据权利要求2所述的压制装置,其特征在于,所述更低冲头的冲头形成为根据权利要求1所述的压制成形装置中的凸形形状,并且所述上冲头的冲头形成为凹形,并且进料器是粉末。其特征在于,腔被提供给上表面凸起形状。\n\n【0008】\n\n4.根据权利要求3所述的压制成型装置,其特征在于,所述较低冲头的冲头形成在根据权利要求1所述的压制成形装置中的凹形形状,所述上冲头的冲头是凸的,所述进料器是粉末。其特征在于腔被提供给腔。\n\n【0009】\n\n5.根据权利要求4所述的压制成形装置的特征在于,在根据权利要求1所述的压制成形装置中,所述下冲头的冲头和所述上冲头的冲头形成为凹形。\n\n【0011】\n\n宣称5压制成型装置描述1在本发明中描述的压制装置中,引导件设置有可拆卸地设置在枕头箱主体上。\n\n【0012】\n\n宣称6压制成型装置描述1在本发明中描述的压制成形装置中,其特征在于,它包括设置在进给盒内的振动器,并且根据要形成的模制体的上表面形状构造。\n\n【0013】\n\n8.根据权利要求7所述的压制成型方法,其特征在于,所述模具具有模具和所述下冲头插入所述管孔和由所述管孔和下冲头形成的腔体。\n\n一种用于形成辅助模塑体的压制成型方法,用于填充端部和填充有腔的粉末,粉末与下冲头的腔室填充,并且用粉碎机沉淀地枯萎地形成了指针,使其变得基本均匀在该位置,按下填充腔的粉末,通过上冲头和下冲头按压,以按下填充率而按下填充率。污染装置具有获得基本均匀形式的模塑体形式的第二步骤,并且脱离装置设有引导箱主体和引导箱体,并且具有用于将花粉的引导件与滑动粉末滑动的引导件。形成为包括盒子,燃料片箱导向轨道模具的模具,并且轨道是模具孔,以配置腔的顶部更多形成的通孔,轨道的上表面和引导件由待形成的模制体的上表面形状形成,通过轨道围绕铁轨形成通孔,在第一步中,给料盒滑动到下冲头以供给腔,并且引导件用于根据送料盒缩回时根据要形成的模制体的上表面形状滑动粉末。它的表征。\n\n【0015】\n\n在本说明书中,“不同形状的紧凑型”是指模制体,其中主表面的至少一个与冲头的冲头的主表面的主表面不是平面的。 “非平面”是指除了单个平面之外的平面形状,例如,具有弯曲表面的平面形状或步骤。 “填充比”是指在压制腔内在腔体中的粉末(在压制后填充深度之前填充填充深度)之前填充深度在压制到填充深度之前的比率。\n\n【0016】\n\n在根据权利要求1所述的压制装置中,由于粉末填充率是基本均匀的,而是无论位置如何,腔内的粉末都被上孔和下拳压制,并且填充率不可分该位置。获得最不传达的模制品,并且模塑体内的密度也基本上均匀。因此,可以有利地形成各种形状的模制品。另外,在通过烧结模制体获得的烧结体中不能发生翘曲和变形,并且可以有利地形成具有各种形状的烧结体。此外,在滑动的饲料花粉中,引导件可以通过根据待送料箱缩回时形成的模制体的上表面形状来容易地实现。宣称7这同样适用于所描述的压制成型方法。\n\n【0017】\n\n3.根据权利要求2所述的压制装置,其特征在于,所述上表面凸起成型体可以形成良好,并且在根据权利要求3所述的压制成型装置中,可以有利地形成上表面凹体的成型体。在压制成型装置中,可以有利地形成上下双面凸起模制品。\n\n【0019】\n\n宣称5在本发明中描述的压制装置中,可以通过根据要形成的模制体的形状更换引导箱引导件而不通过更换引导箱引导件而不更换进给箱主体的各种上表面形模制品。\n\n【0020】\n\n宣称6在本发明中描述的压制成形装置中,可以通过根据要形成的模制体的形状设定振动器的形状,同时实现所需进给在进料器中搅拌粉末。\n\n【发明效果】\n\n【0021】\n\n根据本发明,可以形成各种形状的模制品。\n\n实施本发明的最佳方式\n\n【0022】\n\n在下文中,将参考附图描述本发明的实施例。\n\n参见图1和图2.如图1和2所示,根据本发明的实施例的压制成形装置10适用于通过干压力形成上表面凸拱形成型体。\n\n【0023】\n\n压制成形装置10是模具组12和装配到管芯组12的模具14,一对轨道16设置在模具组12的上表面纵向(丸盒28的运动方向)中。模具14.,粉末M容纳粉末M并将粉末M供应到腔26(后面描述)\n\n包括用于压缩填充在腔26中的粉末M的粉末装置18和下冲头20和上冲头22。\n\n【0024】\n\n每个轨道16的上表面形成为弯曲表面凸起形状,并且每个轨道16形成在模具组12上,并且形成在管芯14上的轨道并连接轨道部分16a和16b。它由第16c部分组成。在该实施例中,模具14和轨道部分16c一体地形成。此外,轨道16优选地由与模具14相同的材料制成,例如,具有高锰钢,粘合的硬质合金等。\n\n【0025】\n\n在垂直方向上形成两个模孔14a,并且在与模孔14a对应的轨道部分16c中形成通孔24。如上所述,通过将通孔24连接到管孔14a,形成沿垂直方向穿透轨道部分16c的大型模具孔和芯片14。下冲头20从下侧上下装配到管孔,并且上冲头22设置成向前移动并从上侧移动。下冲头20的冲头表面20a形成为弯曲表面凸起形状,并且上冲头22的冲头22a形成为弯曲的凹形。下冲头20的冲头20a与要形成的模制体S的内部主表面S2结合使用,上冲头22的冲头22a符合其外部主表面S1要形成的模制体S(参见图3)。结果,粉末M可以在近净状态下压制,并且省略了随后的过程中的加工过程,而无需提供过量的加工方法,并且制造成本降低。参考图1.如图3所示,模制体的外部R尺寸是指在外主表面S1的弯曲方向上的中央部分的尺寸,并且模制体的内r尺寸是中央部分的尺寸内部主表面S2的弯曲方向。说。\n\n【0026】\n\n由下冲头20的模孔14a,通孔24和冲头表面20a形成任意体积的腔26。\n\n【0027】\n\n还参考图1.如图4所示,馈送装置18包括用于滑动花粉的丸箱28,其能够在轨道16上滑动。在枕头盒28中,填充诸如氮气的惰性气体,以保持粉末M并保持在惰性气体气氛中的面粉箱28。枕头盒28包括粉末盒主体30,并且引导件32和34设置在枕头箱主体30的前表面和后表面上。\n\n【0028】\n\n进料盒28通过引导件32和34沿轨道16沿轨道16移动。导向器32和34根据模制体S的外部主表面S1的形状构造。松弛形状由引导件32和34的衬垫部分32a和34a的形状决定。此外,在该实施例中,衬垫部分32a和34a形成为弯曲的形状,该形状与轨道16的上表面形状匹配,由此进给箱28可以在轨道16上滑动。此外,引导件32和34可拆卸地用于进料箱主体30。\n\n【0029】\n\n诸如液压缸或气缸的汽缸40经由共同形状连接构件36和圆筒杆38连接到污染箱28。因此,枕头箱28通过汽缸40滑动轨道16并且可以向前移动到腔26。\n\n【0030】\n\n从图5中可以看出,在丸盒28中设置多个振动器(在该实施例中也称为搅拌器)42。每个振动筛42具有连接到两个端部构件44的两个纵向构件44,并且横向构件44根据轨道16的上表面形状和待形成的成型体S形成,并且轨道16相应部分是形成为向上弯曲凸形。振动筛42由例如不锈钢(SUS304)制成。\n\n【0031】\n\n然后,每个纵向构件46的上部连接到平行于丸盒28的前表面和后表面延伸的两个支撑杆48,并且振动器42固定。两个支撑杆48连接到枕头28中的两个支撑杆50。两个支撑杆48的两端都是\n\n在螺钉等处固定在条状连接器52和54处。气缸58固定到附接到药丸盒28的后表面的定影配件56,并且气缸58的圆柱轴60固定到连接材料54。因此,振动筛42通过在气缸58的两端从空气供应管62供应的空气往复运动来往复运动。根据粉末填充量改变圆形跳闸的数量。\n\n【0032】\n\n此外,作为对准装置,一对磁场产生线圈(未示出)设置有上下夹层的模具组12,并且在磁场产生线圈的中心提供诸如Permergeeure的芯。通过激励磁场产生线圈,将例如1.2T平行于压力方向的导向磁场施加到腔26中的粉末M,并且粉末M取向。从磁场产生线圈施加的磁场可以是静态磁场或脉冲磁场。\n\n稀土磁铁合金粉末用于粉末M.\n\n【0033】\n\n例如,制备稀土合金粉末。一,淬火法(冷却速度102°C / SEC或更多104使用带钢铸造方法生产板坯作为制造合金的方法,由℃/秒或更小)。例如,在美国专利No.美国专利号5,383,978中公开了牵引方法。具体而言,Nd:26wt%,Dy:5.0wt%,B:1.0wt%,Al:0.2wt%,Co:0.9wt%,Cu:0.2wt%,残余的Fe和不可避免的组合物组成的组合物组成由残留的Fe和不可避免的杂质组成通过高频溶解熔化以形成合金熔融金属。在1350℃保持合金熔融金属后,通过单辊方法淬火合金熔融金属,得到0.3mm厚的片状合金。此时的淬火条件例如,例如,辊周速度为约1m / s,500℃/ sec冷却速率为500℃/秒,和200℃。\n\n【0034】\n\n通过储氢方法粗糙地挤压片状合金之后,可以通过使用喷射磨机在氮气气氛中研磨来获得平均粒径为约3.5μm的合金粉末。该氮气气氛中的氧气量优选降低至约10000ppm。在日本专利公开No.6-6728中描述了这种喷射厂。在粉碎时,优选控制在大气气体中包含的氧化气体(氧气和水蒸气)的浓度,从而在微量研磨至6000ppm或更小之后调节合金粉末的氧含量(重量)。如果稀土合金粉末中的氧气量超过6000ppm,则磁体中的非磁性氧化物的比例增加,最终烧结磁体的磁特性降低。\n\n【0035】\n\n对于如此获得的稀土合金粉末,将润滑剂加入,混合,混合,混合,混合,混合,混合在摇摆混合器中,并用润滑剂覆盖合金粉末颗粒的表面。作为润滑剂,优选使用具有石油溶剂的脂肪酸酯。在该实施方案中,甲基丙烯酸甲酯用作脂肪酸酯,并且异烷烃可以适当地用作基于石油的溶剂。甲基己酸与异戊烷的重量比可以是例如1:9。\n\n【0036】\n\n润滑剂的类型不限于上述。作为脂肪酸酯,可以使用除甲基甲酯,例如甲基夹甲酸甲酯,月桂酸甲酯,月桂酸甲酯等。作为溶剂,可以使用由异戊烷烃,环烷溶剂等表示的石油溶剂。在研磨期间,润滑剂添加的时序是任意的,并且可以是铣削期间的碾磨。固体(干燥)润滑剂如锌硬脂酸锌可以与上述液体润滑剂一起使用。\n\n【0037】\n\n将参考图4描述压制成形装置10的操作。\n\n最初,如图2所示。如图6A所示,下冲头20和上冲头22位于上升端,并且在该状态下,圆筒40被操作以沿轨道16沿轨道40操作汽缸40和丸箱28\n\n当枕头28位于下冲头20上时,沿方向滑动并停止它,如图6(b)所示。此后,如图2所示。如图6C所示,通过降低下冲头20在芯片上形成腔26,此时,枕头28中的振动筛42是例如5至15次圆形跳闸,而且水平往复式,丸中的粉末M填充在腔26中并填充。由于粉末M未填充高密度,因此各个颗粒处于各个颗粒容易移动的状态,从而即使具有相对低定向的磁场,也可以施加期望的取向。\n\n【0038】\n\n在将粉末M填充到腔26之后,操作气缸40以保存枕头28。此时,腔26上的粉末M在进给盒28和34的钻孔部分32a和34a中略微略微。如上所述,由于引导件32和34被配置为对应于要形成的模制体S的外部主表面S1的形状,因此引导件32和34构造成对应于模制体的上表面形状S由引导件32和34形成。如图6D所示,突然进行,粉末M填充有腔26,使得无论位置如何,厚度都是均匀的。结果,将粉末M填充到腔26中,使得填充率几乎不变化(例如,填充比约2.2至2.5倍)。\n\n【0039】\n\n此后,如图6E所示。如图6E所示,腔26中的粉末m是上冲头22和下冲头20,同时通过磁场产生线圈在上冲头22插入到磁场产生线圈的导向磁场腔26.通过压制模制的压制成型,并且压力机方向上的厚度是无论基本均匀的弓形形状的位置。然后,如图2所示。如图6F所示,通过升高上冲头22和下冲头20,从腔26提取并从腔26中提取并提取所获得的模制体S.重复上述操作以连续地执行粉末M的按压操作。\n\n【0040】\n\n以这种方式获得的模塑体S被传送到烧结炉(未示出)并在AR气氛下在1050℃下烧结2小时,并在AR气氛中另外600℃,1小时。烧结磁体是老化,获得烧结磁铁。\n\n【0041】\n\n根据压制成形装置10,由于粉末M的填充率被堆叠成使得粉末M的填充率基本均匀,因此粉末M的填充比不是基本均匀的,因此腔26由上部当按下粉末m时,下冲头22和20,无论位置如何,具有几乎没有变化比的模制体S不会改变,并且模制体内的密度基本均匀。因此,即使在模制后存在回弹,也可以抑制在模制体中发生裂缝或可以抑制模制体之间的裂缝的发生,并且可以有利地形成各种不相传的模制品。\n\n换句话说,根据压制成型装置10,可以冲压成靠近成型后的形状的颈部,并且可以形成不同的形状的结构。\n\n【0042】\n\n通过烧结这种模制体获得的烧结磁体不会导致翘曲或变形,并且可以制造具有良好磁性的烧结磁体,并且形成各种不透明的烧结磁体。可以。可以。\n\n另外,在滑动饲料花粉中,通过根据要在枕头28缩回时形成的模制体S的上表面形状除去粉末m,可以容易地实现引导件32和34。可以。\n\n【0043】\n\n此外,只有根据要形成的模制体的形状,只能更换粉末盒28的引导,并且可以使用各种上表面形模制品而不更换丸盒主体30。\n\n此外,通过根据要形成的模制体的形状设定振动器的形状,可以在送进料器28中搅拌粉末M的同时实现所需的进给。\n\n另外,压制成形装置10适合用于压制诸如稀土合金粉末的较差的粉末。\n\n【0044】\n\n接下来,将描述一个实验例。\n\n通过近净馈送装置10使用压制成形装置10获得的模制体和通过传统的直线滑动与传统拉伸装置10齐平而获得的压实主体10.每个绿色内部密度的分布(预烧结成型体中的密度)有人问我。\n\n【0045】\n\n如图1所示。如图7所示,优选地将近净进料调用靠近待形成的模制体的状态,并且直线馈送是如图17所示的直线馈送。据说它是捕获的\n\n【0046】\n\n绿色内密度分布通过沿着丸箱28的行进方向的“1”到“5”识别,并“a”垂直于它们的“e”,我被问到多个(25件)区域。\n\n【0047】\n\n从图1和图2可以看出。图8(b)和(c),通过直接滑动进给的模制体获得的模制物体在绿色内密度分布变化中较小。,密度分布变得均匀。\n\n【0048】\n\n另外,通过接近净进料和具有直滑进给的压块在模制体中改变成型体厚度,并且通过将模制体厚度从2.5mm到4.0mm改变成型体厚度,形成烧结体在烧结体外。比较r尺寸和可成形性。\n\n【0049】\n\n如图1所示。如图9所示,当外部R尺寸的设计尺寸(目标尺寸)为32mm时,由于馈电引起的烧结体是外部R尺寸的厚度,外部R尺寸约为35mm,并且设计尺寸。虽然几乎没有区别,但由于直线滑动进给由于模制体厚度的直线减小而大,并且室外r尺寸变大并且设计尺寸与设计尺寸分开。由此,据了解,在近净进料的情况下,烧结体的变形量比直滑进料的情况更小。\n\n【0050】\n\n此外,从图1中可以看出。根据九个净进料,如果模塑体厚度为约3.0mm至4.0mm,烧结体可以很好地模制。\n\n【0051】\n\n此外,在图1中的腿部喂养的情况下,在馈电和所得源的情况下,模制体如图11(a)所示,示出了在直线放置馈送的情况下的模塑主体和从中获得的烧结体在图11(b)显示。这里的产品(烧结体)尺寸为18.7mm(r)×3mm(厚度)×33.5mm(宽度)×l(长度)。\n\n【0052】\n\n从图12(a)中可以看出,变化率从模制体的形式的直线尺寸和内部r尺寸的情况下降,并且变化率小于直滑馈送的情况和图12(b)如图12(b)所示,可以看出,该区域产量更好地用于近净饲料。面积产率由烧结体横截面积确定。\n\n【0053】\n\n此外,参考图1.参照图13和图13.如图14所示,将描述本发明的另一实施例的压制成形装置10a。\n\n压制成形装置10a用于形成表面凹版形状的模制体。\n\n压模装置10a是轨道64,轨道64在上表面上具有弯曲凹槽,弯曲表面66a的下冲头66,以及弯曲表面68a中的顶部冲头68,以及要形成的模制体的上表面(使用根据待形成的模制体的形状和上表面(凹面)构造的具有导向器70a和72的玻璃器皿28a构造的凹面74。\n\n【0054】\n\n衬垫的形状由引导部分70a和72a的形状决定,并且根据要形成的模制体的上表面形状进行滑动,并且在该实施例中,粉末m是腔26a的上凹面形状。可以提供给此外,在该实施例中,衬垫部分70a和72a形成为弯曲的形状,该弯曲形状与轨道64的上表面形状匹配,由此进给盒28a可以在轨道64上平滑地滑动。振动筛74还具有通过弯曲与轨道64对应于下侧的部分形成的水平构件76。\n\n【0055】\n\n对于这些以外的点,由于压制成形装置10a以与压模装置10相同的方式配置,所以省略重叠描述。\n\n同样在压制成型装置10a中,可以获得与压制成形装置10相同的效果。\n\n【0056】\n\n此外,参考图15和图15.如图16所示,将描述本发明的另一实施例的压制成形装置10b。\n\n压制成形装置10b用于形成生物波多复合体模塑体。\n\n在压制成型装置10b中,上表面是弯曲表面凸起形状,并且打孔表面22a是弯曲凹形的上冲头22,以及待形成的模制体的上表面,以及上表面待形成的模制体。使用根据凸形形状构造的引导件80,82的丸盒28b,以及根据要形成的模制体的上表面(凸面)形状构造的振动筛84。\n\n【0057】\n\n在该实施例中,在形成上下双面凸起的模制物体的情况下,腔体大于压制成型装置10的壳体,以填充腔,使得无论位置如何,填充率都是均匀的。将粉末M供应到上表面凸起形状,使得粉末M在中央部分的溶胀增加。因此,轨道78大于压制成形装置10的轨道16,引导件80和82的衬垫部分80a和82a大于压制成形装置10的衬垫部分32a和34a,以及振动筛84横向构件对应于86轨78的部分弯曲比压制成形装置10的振动筛42的部分弯曲。\n\n【0058】\n\n同样在该实施例中,衬垫部分80a和82a形成为弯曲的形状,该形状与轨道78的上表面形状匹配,由此进给盒28b可以在轨道78上平滑地滑动。\n\n【0059】\n\n对于除此之外的点,由于压制成型装置10B以与压模装置10相同的方式配置,所以省略了重叠的描述。\n\n同样在压制成形装置10B中,可以获得与压模设备10相同的效果。\n\n【0060】\n\n此外,本发明不限于滑动馈送,也可以应用于单独的饲料。\n\n此外,在本发明中,冲头的冲头不限于弯曲形状,并且可以是任何非平面形状。\n\n【0061】\n\n此外,本发明适用于上冲头和下冲头中的至少一个是非平面的,并且可以施加,并且压力机方向上的厚度是均匀的均匀性成形成形的模制体或任何其他变体。适用于形状一个紧凑的。\n\n[简要描述;简介]\n\n【0062】\n\n【图1】图。图1是表示本发明的一个实施例的侧剖视图。\n\n【图2】图1是图1的实施例的横截面图。1(图1)。\n\n图3.图3是表示模制体的示例的透视图。\n\n图4.图3是示出馈电箱的示例的透视图。\n\n图5.图3是示出图1的实施例的振动器的透视图。1及其邻居。\n\n6.图2是表示图1的实施例的操作的示例的图示图。\n\n图7.它是显示近净饲养附近的说明性图。\n\n图8它是显示绿色内密度分布的实验结果。\n\n图9图3是表示烧结体的形成体厚度和外部R尺寸之间的关系的图。\n\n图10.它是显示烧结体的成形性的实验结果。\n\n11.图2是表示每个九个净馈送和直线馈送供应的形状结构横截面形状和烧结体横截面形状的图示。\n\n12.图3是表示每个九个净馈送和直线滑动馈送和烧结体等的模制体的表格。\n\n图13.图。图7是表示本发明的另一个实施例的剖视图。\n\n14.图3是表示在图1的实施方式中使用的馈电盒的立体图。\n\n图15.图3是表示本发明的另一个实施例的剖视图。\n\n图16图3是表示在图1的实施方式中使用的粉末盒的立体图。\n\n图17.图示是一种说明性图,示出了传统的直线滑动片。\n\n[标志的说明]\n\n【0063】\n\n10,10A,10B压制成形装置\n\n14 Dies.\n\n14A钻孔\n\n16,64,78轨道\n\n18件饲养者\n\n20,66拳\n\n20A,22A,66A,68A冲头表面\n\n22,68拳\n\n24到洞\n\n26,26a,26b腔\n\n28,28A,28B Feedbo盒\n\n30个饲料盒体\n\n32,34,70,72,80,82个指南\n\n42,74,84 Shaka.\n\nm粉末\n\n模制体');
INSERT INTO `os_patent_instruction_text` VALUES (13013, 22842, '【技術分野】\n\n【0001】\n\n本発明は、磁石用粉末のプレス成形装置および磁石用粉末成形体の製造方法に関し、特に、磁石用粉末にパルス磁界を印加することができるプレス成形装置およびそのようなプレス成形装置を用いた磁石用粉末成形体の製造方法に関する。\n\n【0002】\n\nなお、本明細書において、「磁石用粉末」とは、焼結磁石の製造に用いられる合金粉末(例えば希土類合金粉末)だけでなく、ボンド磁石の製造に用いられる合金粉末と樹脂粉末との混合粉末などを含むものとする。\n\n【背景技術】\n\n【0003】\n\n以下、希土類焼結磁石を例に従来の製造方法を説明する。\n\n【0004】\n\n現在、希土類焼結磁石として、希土類·コバルト系磁石と希土類·鉄·ボロン系磁石の二種類が各分野で広く用いられている。なかでも希土類·鉄·ボロン系磁石(以下、「R-T-(M)-B系磁石」と称する。RはYを含む希土類元素、TはFeまたはFeとCoおよび/またはNiとの混合物、Mは添加元素(例えば、Al、Ti、Cu、V、Cr、Ni、Ga、Zr、Nb、Mo、In、Sn、Hf、Ta、Wの少なくとも1種)、Bはボロンまたはボロンと炭素との混合物である。)は、種々の磁石の中で最も高い最大磁気エネルギー積を示し、価格も比較的安いため、各種の電子機器へ積極的に採用されている。\n\n【0005】\n\n希土類合金を用いた焼結磁石は、例えば以下の工程を経て製造されている。\n\n【0006】\n\n(1)原料金属を高温で溶解し、所定の組成の希土類合金塊を得る。\n\n【0007】\n\n(2)この合金塊を粉砕して、磁石用粉末としての微小な希土類合金粉末を得る。\n\n【0008】\n\n(3)得られた磁石用粉末を磁界中でプレス成形することによって所定の形状の成形体を得る。\n\n【0009】\n\n(4)この成形体を高温(例えば約1000℃以上)で焼結し、焼結磁石を得る。\n\n【0010】\n\n(5)得られた焼結磁石の磁気特性を高めるために、さらに時効処理と呼ばれる熱処理を行う。\n\n【0011】\n\n(6)この焼結磁石の表面を研磨し、寸法と形状を整える。\n\n【0012】\n\n特性に優れた焼結磁石(特に異方性磁石)を製造するためには、成形体を形成する過程において、磁石用粉末を高度に配向させることが望まれる。\n\n【0013】\n\n磁石用粉末の配向度を向上させるために、磁石用粉末の表面に潤滑剤を付与したり、配向磁界の強度を高くするなどの試みがなされている。\n\n【0014】\n\nしかしながら、潤滑剤の付与による配向度の向上には限界があり、十分な配向度を得るに至っていない。また、潤滑剤の量を多くすると、最終的な焼結磁石中に残存する炭素量が増加し、磁気特性が低下するという問題がある。また、印加する静磁界の強度を強くすると、磁界発生用コイルの発熱量が増大し、生産性が低下する。\n\n【0015】\n\nそこで、磁石用粉末の配向度を向上するために、従来の静磁界に代えて、パルス磁界を利用する方法が提案されている(例えば、特許文献1)。\n\n【特許文献1】特開平5-234789号公報\n\n【特許文献2】特開平7-283057号公報\n\n【発明の開示】\n\n【発明が解決しようとする課題】\n\n【0016】\n\nしかしながら、パルス磁界を印加すると、渦電流の問題が発生し、生産性の向上を阻害する。\n\n【0017】\n\n一般に、プレス成形中に配向磁界を印加する工程を採用する場合、キャビティ(成形空間)内の磁石用粉末に印加される配向磁界の方向や強度が、ダイスやパンチによって影響されないように、透磁率が1.01未満の非磁性金属材料(例えば、SUS304や高マンガン鋼)を用いて形成されている。これらの非磁性金属材料は、導電性(例えば、SUS304や高マンガン鋼の比抵抗は約70μΩ·cm程度)を有しているので、パルス磁界が印加されると、渦電流が発生する。渦電流の発生は、ダイスを発熱させるため、冷却目的でパルス磁界の印加間隔を広げる必要があり、量産性を著しく低下させるという問題がある。\n\n【0018】\n\nなお、渦電流対策として、特許文献2に開示されている絶縁性セラミックス(サイアロン)からダイスを形成することも考えられるが、サイアロンは破壊靭性と曲げ強さが十分でなく、金型(ダイスやパンチ)の材料として好ましくない。特に、Nd-Fe-B系希土類磁石をリング形状に成形する場合、印加圧力に耐えるダイスをサイアロンから形成しようとすると、ダイスを小型化することができず、結果として印加される磁界強度が低下したり、あるいは、磁界印加用コイルを大型化することが必要になる。\n\n【0019】\n\n本発明は、上記諸点に鑑みてなされたものであり、その主な目的は、パルス磁界を用いて従来よりも効率良く磁石用粉末成形体を製造する方法およびそのような製造方法に好適に用いられるプレス成形装置を提供することにある。\n\n【課題を解決するための手段】\n\n【0020】\n\n本発明のプレス成形装置は、キャビティを形成するための貫通穴を有する金型と、前記貫通穴に下方から挿入される下パンチと、前記貫通穴に上方から挿入され、前記キャビティに充填された磁石粉末を前記下パンチと共に加圧して成形する上パンチと、前記キャビティに充填された磁石粉末に対して1.5T以上10T以下のパルス磁界パルス磁界を印加する磁界発生装置とを備えたプレス成形装置であって、前記ダイスは、主成分がジルコニアであり、5質量%以上50質量%以下の濃度で金属炭化物を含有する導電性セラミックス材料から形成されている。\n\n【0021】\n\n好ましい実施形態において、前記金属炭化物は、NbC、TiC、およびWCからなる群から選択された少なくとも1種である。\n\n【0022】\n\n好ましい実施形態において、前記キャビティは円筒形状を有している。\n\n【0023】\n\n本発明の磁石の製造方法は、上記のプレス成形装置を用意する工程と、前記プレス成形装置のキャビティ内に磁石粉末を充填する工程と、前記上下パンチによって磁石粉末を加圧する過程で前記磁石粉末に対して1.5T以上10T以下のパルス磁界を印加する工程とを含む。\n\n【0024】\n\n好ましい実施形態において、前記パルス磁界を印加する工程は、磁界印加後0.1msec以上3.5msec以下の時間でパルス磁界強度を最高値に上げ、しかも、次のパルス磁界の印加までの時間を4秒以下に設定してパルス磁界の印加を繰りかえす。\n\n【0025】\n\n好ましい実施形態において、ダイスの表面温度を30℃以下に保持する。\n\n【発明の効果】\n\n【0026】\n\n本発明によれば、パルス磁界を用いて従来よりも効率良く磁石用粉末の成形体を製造する方法およびそのような製造方法に好適に用いられるプレス成形装置が提供される。\n\n【発明を実施するための最良の形態】\n\n【0027】\n\n以下、図面を参照しながら、本発明の実施形態による磁石用粉末のプレス成形装置の構成および動作ならびにそれを用いた磁石用粉末成形体の製造方法を説明する。以下では、磁石用粉末として、希土類合金粉末を用いた例を説明するが、本発明はこれに限られない。\n\n【0028】\n\n実施形態によるプレス成形装置100の構造を模式的に図1に示す。プレス成形装置100は、キャビティを形成するための貫通孔を有するダイス20と、ダイス20の少なくとも上端部を内包する開口部30aを有し、ダイス20の上端面と実質的に同一面を形成するように配置されたフィーダプレート30と、キャビティ内に充填された磁石用粉末をプレスするための上パンチ10Aおよび下パンチ10Bと、キャビティ内の磁石用粉末に対してパルス磁界を印加するための磁界発生装置40と有する。なお、ダイス20は、ベース54に例えばネジによって固定されている。ダイス20の貫通穴の断面形状は、円に限定されず、多角形や弓形などの形状であってもよい。\n\n【0029】\n\nプレス成形装置100が有するフィーダプレート30は、絶縁体で形成されており、上面が平滑面である。フィーダプレート30が絶縁体で形成されているので、磁界発生装置40のコイル部40bによってパルス磁界が印加されても、フィーダプレート30に渦電流が発生しないので、温度の上昇や、振動の発生が起こらない。フィーダプレート30の大きさは、フィーダボックス80内の粉末が接触する部分よりも大きい。\n\n【0030】\n\nフィーダプレート30の上面は、平滑面であるので、フィーダボックス80が移動しても、磁石用粉末である希土類合金粉末が上面に残留し難く、酸化された希土類合金粉末が成形体中に混入することが抑制される。このような利点を得るためには、フィーダプレート30の上面の平滑度は、平均粗さRaが1.0以下であることが好ましい。\n\n【0031】\n\nまた、フィーダプレート30は、その上面の上をフィーダボックス80が移動しても変形しない程度の弾性率を有していることが好ましい。\n\n【0032】\n\nこれらの条件を満足する材料として、セラミックやガラスを挙げることができる。特に、結晶化ガラス(例えば、日本電気硝子社製のN-11)を好適に用いることができる。日本電気硝子社製のN-11は、ビッカース硬度Hv:800、ヤング率:90、000\n\nN/mm2、比抵抗:12.7Ω·cm(室温)、透磁率:1.001未満の物性値を有している。\n\n【0033】\n\nなお、フィーダボックス80は、フィーダプレート30上だけでなく、フィーダプレート60上も移動する。フィーダプレート60はフィーダプレート30と一体に形成しても良いし、パルス磁界の影響を受けない位置に配置される場合には、従来と同様に、SUSなどの金属材料を用いて形成してもよい。\n\n【0034】\n\n本実施形態では、ダイス20を比較的電気抵抗の高い導電性セラミックから形成している。この導電性セラミックスは、主成分がジルコニアであり、5質量%以上50質量%以下の濃度で金属炭化物を含有している。この金属炭化物は、導電性を付与するために添加されており、NbC、TiC、およびWCからなる群から選択された少なくとも1種であることが好ましい。\n\n【0035】\n\nこのようなジルコニアを主成分とする導電性セラミックスは、WCなどの超硬材料に比べて渦電流損が数百分の1と小さい。また、導電性付与のための金属炭化物を添加しないジルコニアセラミックスに比べると、ヤング率や硬さHvが大きく、強い圧力や摩擦力を受けるダイスの材料として好適である。\n\n【0036】\n\nなお、主成分がジルコニアであり、5質量%以上50質量%以下のNbC、TiC、および/またはWCを含有するジルコニアセラミックスは、導電性を示すため、僅かに渦電流損が発生する。一方、これらの導電性添加物(金属炭化物)を含有しない通常のジルコニアセラミックスは、絶縁性セラミックスであるため、渦電流損は全く発生しない。したがって、渦電流を抑制するという観点からは、NbC、TiC、またはWCを添加することは好ましくないと考えられる。しかしながら、本発明者は、NbC、TiC、またはWCなどの金属炭化物の添加量を適切な範囲(5質量%以上50質量%以下)に設定することにより、ジルコニアセラミックスに発生する渦電流を充分に低く抑えつつ、その機械的強度を充分なレベルに向上できることを見出し、本発明を想到するにいたった。\n\n【0037】\n\nまた、実験によると、サイアロンなどの導電性セラミックスからダイスを形成した場合は、ダイスの電気抵抗および機械的強度(特に靭性)が低すぎるため、渦電流損を充分に低減できず、また機械的強度の観点から信頼性が低いという問題のあることがわかった。\n\n【0038】\n\nジルコニアセラミックスに添加する金属炭化物としては、熱伝導性向上という観点から、WCが最も優れている。これらの金属炭化物の添加量が5質量%よりも少ないと、セラミックスの加工性が低下するため好ましくない。また、添加量が50質量%を超えると、靭性が低下し、プレス工程中に破損する可能性があり、また、渦電流抑制効果が低下するため好ましくない。\n\n【0039】\n\nなお、上パンチ10Aおよび下パンチ10Bは、公知の材料で形成される。従来技術の説明で述べたように、これらの材料は、透磁率が1.01以下の非磁性材料で形成されることが好ましい。例えば高マンガン鋼(比透磁率:1.001未満、比抵抗:約70μΩ·cm)から好適に形成される。また、場合によっては、絶縁性の材料で形成することもできる(上記特許文献2)。また、パンチの内部に冷却水等を用いて冷却する機構を設けても良い(例えば、特開2000-223336号公報)。さらに、ダイス20と下パンチ10Bとの間にかみこまれた粉末を除去するため、および/またはダイス20と下パンチ10Bとの摺動面を冷却するために、特許第3193912号公報に記載されているように、ダイス20と下パンチ10Bとの間にガスを噴出する機構を設けても良い。噴出するガスは、空気または不活性ガス(例えば窒素ガス)であり、また、このガスに潤滑剤を混合してもよい。\n\n【0040】\n\n次に、図2(a)〜(d)を参照しながら、本発明の実施形態による希土類合金粉末の成形体の製造方法を説明する。ここで、円筒状の成形体14bを製造する例を説明する。\n\n【0041】\n\nダイス20は、コア部20aと円筒部20bとを有している。コア部20aと円筒部20bとの間隙に、キャビティが規定される。上パンチ10Aおよび下パンチ10Bは、このキャビティ内を上下に移動し、キャビティ内に充填された希土類合金粉末をプレスする。本実施形態における円筒部20bの内径は約20mm、コア部の直径は約9mmである。こうして外径約20mm、内径約9mm、高さ約40mmの円筒形成形体を作製する。\n\n【0042】\n\nフィーダプレート30には、上述の結晶化ガラスN-11を用いて形成されたものを用いた。フィーダプレート30は円形の開口部30aを有し、ダイス20の円筒部20bの上端部を内嵌するように配置され、且つ、その上面はダイス20の上端面と実質的に面一となるように配置されている。なお、フィーダプレート30の開口部30aとダイス20とのクリアランスは、0.1mm(少なくとも0.2mm以下)に設定してある。これは、フィーダボックス80を用いて摺り切り法によって、希土類合金粉末をキャビティ内に充填する過程で、希土類合金粉末がこのクリアランス部に侵入しないためである。ダイス20の外形を円筒形にし、開口部30aを円形にすると、ダイス20とフィーダプレート30とが一点のみで接触するようにできるので、クリアランスを小さく設定することができる。\n\n【0043】\n\nなお、必要に応じて、このクリアランスに侵入した希土類合金粉末をガス圧などで除去するための機構を設けてもてもよい(例えば、上記特許第3193912号公報参照)。\n\n【0044】\n\nまた、磁界発生装置40で発生した熱をフィーダプレート30に伝えないために、磁界発生装置40の支持板40aの上面とフィーダプレート30の下面との間に1μm以上のクリアランスを設けることが好ましい。\n\n【0045】\n\n希土類合金粉末12としては、R-Fe-B系希土類合金が好適に用いられる。希土類合金の組成および製造方法は、例えば、米国特許第4,770,723号および米国特許第4,792,368号に記載されている。R-Fe-B系希土類合金の典型的な組成では、RとしてNdまたはPrが主に用いられ、Feは部分的に遷移元素(例えばCo)に部分的に置換されてもよく、BはCによって置換されてもよい。ここでは、急冷法で作製したNd-Fe-B系凝固合金(密度7.5g/cm3)をジェットミルで粉砕することによって得られた平均粒径(FSSS粒径)が1.5〜8μm(例えば3μm程度)の粉末を用いる。合金粉末の表面は、例えばステアリン酸亜鉛などの潤滑剤で被覆しておくことが好ましい。\n\n【0046】\n\nまず、図2(a)に示すように、希土類合金粉末12が収容されたフィーダボックス80をフィーダプレート30の上面上を移動させ、図2(b)に示すように、キャビティを覆うように配置する。この後、希土類合金粉末12の自重を利用し、あるいは、フィーダボックス80に設けられたアジテータ(不図示)を用いて加圧しながら、希土類合金粉末12をキャビティ内に充填する。摺り切り法を用いると、キャビティ内に適当な見掛け密度(例えば2.0g/cm3〜2.5g/cm3)で合金粉末を充填することができる。\n\n【0047】\n\n続いて、上パンチ10Aおよび/または下パンチ10Bを昇降させることによって、キャビティ内の希土類合金粉末を一軸プレスする。典型的には上パンチ10Aを下降させるが、上パンチ10Aを下降させるとともに下パンチ10Bを上昇させてもよい。\n\n【0048】\n\nここで、希土類合金粉末(最終的な成形体が得られる前の合金粉末を「仮成形体」とい\n\nうこともある。仮成形体はキャビティから取り出した状態で形状を維持できないものも含む。)14aが所定の密度に到達した時点で、磁界発生装置40によってパルス磁界を印加する。希土類合金粉末14aの密度が低い時点でパルス磁界を印加しても配向の効果が低い。本実施形態では、希土類合金粉末14aの密度が3.0g/cm3以上4.0g/cm3以下の時点、パルス磁界を印加する。\n\n【0049】\n\n希土類合金粉末の密度が所定の範囲にある時点でパルス磁界を印加するという動作を確実に実行するためには、上パンチ10Aおよび/または下パンチ10Bのストロークを制御し、仮成形体の密度が所定密度に到達した時点で一旦上パンチ10Aおよび/または下パンチ10Bのストロークを停止することが好ましい。この停止期間にパルス磁界を印加し、その後、最終的な成形体を得るためのプレス工程を再開すればよい。\n\n【0050】\n\nパルス磁界としては、0.1msec以上3.5msec以下の時間で最高磁界強度に到達する磁界を用いることが好ましい。例えば、図3(a)に示すようなプロファイルを有する交番減衰磁界を好適に用いることができる。パルス磁界を用いると短時間で配向することが可能で、交番減衰磁界を用いることによって成形体の残磁を低減することができる。パルス磁界の強度は、用いる材料の保磁力に依存するが、磁界発生用コイルの中心軸(空芯状態)において1.5T以上10T以下の範囲(典型的には4〜6T)にあることが好ましい。磁界強度は、他の条件が同一であれば、コイルの内径が小さくなるほど増大する。名お、交番減衰磁界に代えて、図3(b)に示す単調減衰磁界を用いてもよい。\n\n【0051】\n\nまた、パルスピーク強度が変化しない交番磁界を用いてもよいし、図3(a)または(b)に示すようなパルス磁界を複数回繰り返して印加してもよい。さらに、パルス磁界の印加後に静磁界を印加してもよい。\n\n【0052】\n\nなお、減衰磁界を用いない場合は、脱磁磁界をさらに印加することが好ましい。成形体の残磁が大きいと、成形体の表面に粉末が付着したり、あるいは成形体同士が密着したりするので、ハンドリングしにくくなる。\n\n【0053】\n\n本実施形態のプレス成形装置100では、ダイス20がジルコニアを主成分とする導電性セラミックスから形成されている。前述のように、このダイス20によれば、渦電流による発熱が生じにくく、強いパルス磁界の印加を短い間隔(例えば4秒以下)で多数回繰り返しても、ダイス20の温度を室温程度に抑えることができる。\n\n【0054】\n\nこのように、本発明によるプレス成形装置100を用いると、パルス磁界を印加しても、希土類合金粉末が接触するダイスに渦電流が発生しにくく、その温度上昇を抑制できるため、成形サイクルタイムを短くすることができる。また、室温よりも温度を低くした冷却水を用いてダイスを冷却する必要もなくなる。このような低温の冷却水を用いてダイスを冷却すると、ダイス表面に結露が生じやすくなり、希土類合金粉末の特性を劣化させる可能性があるが、本発明によれば、そのような問題を回避することができる。\n\n【0055】\n\nなお、所定の強度で所定の方向(ここではプレス方向に平行)のパルス磁界を希土類合金粉末に均一に印加するためには、図2(c)に示したように、希土類合金粉末14aは磁界発生装置40のコイル部40bの中心に位置することが好ましい。一方、下パンチ10Bのストロークは装置によって固定されている。従って、種々の大きさの成形体をプレス成形するためのマージンを確保するためには、フィーダプレート30の厚さは薄いことが好ましく、10mm以下であることが好ましい。但し、あまり薄いと強度が低下するので厚さは2mm以上あることが好ましい。また、あまり薄いとコイル部40bで発生した熱を十分に絶縁(断熱)できず、粉末に熱が伝達されることがあるので、フィーダプレート30の厚さは2mm以上あることが好ましい。\n\n【0056】\n\n磁界発生装置40は、一般に、図1に示したように、コイル部40bを支持するための支持板40aを有している。この支持板40aは樹脂材料で形成されていることが多いが、この支持板40aを上述した結晶化ガラスなどを用いて形成することによって、支持板40aをフィーダプレート30として用いることができる。このような構成を採用すると、フィーダプレート30が磁界発生装置40のコイル部40bと実質的に接するように配置されるので、成形マージンを大きくできる利点が得られる。なお、コイル部40bにおける発熱が激しい場合には、フィーダプレート30とコイル部40bとの間に断熱材を介在させてもよい。\n\n【0057】\n\nパルス磁界を印加した後、最終的な成形体の密度が、例えば4.0g/cm3〜4.5g/cm3となるように再度加圧し、成形体14bを得る。図2(d)に示すように、例えば、ダイス20を降下させることによって、成形体14bを取り出す。\n\n【0058】\n\n得られた成形体14bは、公知の方法で焼結される。Nd-Fe-B系焼結合金は、例えば、成形体14bをAr雰囲気中で約1000〜1100℃で数時間の焼結処理を行い、その後Ar雰囲気中で約500〜700℃で数時間の時効処理を行うことによって得られる。\n\n【0059】\n\n上記の焼結·時効処理のあと、公知の方法により、必要とする形状に切断し、研磨などの加工工程を行なう。\n\n【0060】\n\n本実施形態では、本発明を希土類合金粉末のプレス成形に適用しているが、希土類合金粉末と樹脂粉末とを混合したボンド磁石用粉末のプレス成形にも適用することができる。\n\n【0061】\n\n(実施例)\n\n以下、本発明の実施例と比較例とを説明する。\n\n【0062】\n\n実施例として70質量%のZrO2と30質量%のNbCからなるセラミックス製のダイスを用い、比較例としては、超硬(WC)ダイスを用いた。より具体的には、上記の各ダイスをセットした図1のプレス成形装置100において、パルス磁界(最高磁界強度:5.6T、減衰率82%、パルス幅:1.7ミリ秒)を4回連続印加し、その後40秒間休止するというサイクルを繰り返しながら、ダイスの表面温度の変化を調べた(室温23℃)。\n\n【0063】\n\n図4は、印加したパルス磁界の波形を示すグラフである。比較例の場合、最大磁界強度は3.87T、立ち上がり時間は1.39msecであったが、実施例の場合、最大磁界強度は5.51T、立ち上がり時間は0.85msecであった。なお、空芯の場合、最大磁界強度は5.60T、立ち上がり時間は0.87msecであった。このように、磁界発生用コイルに与える電流が同じ大きさである場合、本発明の実施例によれば、より強いパルス磁界を印加することが可能になる。\n\n【0064】\n\n図5は、温度変化を示すグラフである。このグラフの縦軸はダイスの表面温度、横軸は経過時間を示している。図5から明らかなように、本実施形態のダイス表面の温度上昇は26.7℃程度に抑えられたが、比較例では、40℃を超えてしまった。\n\n【0065】\n\nこのように、本発明の実施例によれば、渦電流損が生じにくく、発熱が抑制されるため、高いピーク強度を持つパルス磁界を短い間隔で複数回継続的に印加できる。その結果、最終的に得られる磁石の残留磁束密度Brも比較例に比べて向上した。\n\n【産業上の利用可能性】\n\n【0066】\n\nこのように本発明のプレス成形装置は、渦電流損が少なく機械的強度の高いダイスを備え、短い立ち上がり時間で磁界強度がピークに達するパルス磁界を印加できるため、磁石特性に優れた磁石を量産することができる。\n\n【図面の簡単な説明】\n\n【0067】\n\n【図1】本発明の実施形態によるプレス成形装置100の構造を模式的に示す斜視図である。\n\n【図2】(a)〜(d)は、本発明の実施形態による希土類磁石用粉末成形体の製造方法における工程を説明するための模式的な断面図である。\n\n【図3】(a)および(b)は、本発明の実施形態による希土類磁石用粉末成形体の製造方法において好適に用いられるパルス磁界のプロファイルを示す図である。\n\n【図4】印加したパルス磁界の波形を示すグラフである。\n\n【図5】パルス磁界の印加によってダイスの表面温度がどのように変化するかを示すグラフである。縦軸はダイスの表面温度、横軸は経過時間である。\n\n【符号の説明】\n\n【0068】\n\n10A  上パンチ\n\n10B  下パンチ\n\n20  ダイス\n\n20a  コア部\n\n20b  円筒部\n\n30  ダイプレート\n\n30a  ダイプレートの開口部\n\n40  磁界発生装置\n\n40a  支持板\n\n40b  コイル部\n\n52  支柱\n\n54  ベースプレート\n\n60  フィーダプレート\n\n80  フィーダボックス\n\n80a  フィーダボックスの底部', '【技术领域】\n\n【0001】\n\n本发明涉及一种用于磁体粉末的压制成型装置及其制造磁体的粉末成型体的方法,特别是一种能够将脉冲磁场施加到磁体和磁体的粉末的压制成形装置使用这种压制成形装置,它与制造粉末成型体的方法有关。\n\n【0002】\n\n在本说明书中,“磁体粉末”不仅是用于制造烧结磁体的合金粉末(例如,稀土合金粉末),而且还用于生产粘合磁体的合金粉末和树脂粉末粉末的混合等包括。\n\n发明背景\n\n【0003】\n\n在下文中,将通过稀土烧结磁体来描述常规制造方法。\n\n【0004】\n\n目前,两种类型的稀土,基于钴基磁铁和稀土 - 基铁和硼基磁体被广泛用作稀土烧结磁体。其中,稀土,铁,硼基磁体(下文中称为“RT-(M)-B基磁体”。R是含有Y,T的稀土元素,是Fe或Fe和Co的混合物/或Ni,m是添加元素(例如,Al,Ti,Cu,V,Cr,Ni,Ga,Zr,Nb,Mo,In,Sn,Hf,Ta,W,W,B是硼或硼和硼碳是混合物。)是各种磁铁中最大的最大磁能产品,价格也相对较低,因此它被激活用于各种电子设备。\n\n【0005】\n\n使用稀土合金的烧结磁铁例如通过以下步骤制造。\n\n【0006】\n\n(1)将原料金属溶解在高温下,得到预定组合物的稀土合金质量。\n\n【0007】\n\n(2)该合金质量研磨,得到一定的稀土合金粉末作为磁体的粉末。\n\n【0008】\n\n(3)通过将所获得的磁场压制在磁场中获得具有预定形状的模制体。\n\n【0009】\n\n(4)模塑体在高温(例如约1000℃以上)处烧结以获得烧结磁体。\n\n【0010】\n\n(5)进一步进行称为老化过程的热处理以增加所得烧结磁体的磁性。\n\n【0011】\n\n(6)抛光烧结磁体的表面,调节尺寸和形状。\n\n【0012】\n\n为了产生特性优异的烧结磁体(尤其是各向异性磁体),希望在形成模塑主体的过程中高度定向磁体粉末。\n\n【0013】\n\n为了提高磁体的粉末的比对程度,试图将润滑剂赋予粉末表面的润滑剂,或者增加取向磁场的强度。\n\n【0014】\n\n然而,由于润滑剂的施用而改善取向程度的限制,并且尚未达到足够的取向。另外,如果润滑剂的量增加,则存在剩余的最终烧结磁体的碳量增加的问题,并且磁特性降低。另外,当加强施加的静磁场的强度时,对磁场生成线圈的热量增加,并且生产率降低。\n\n【0015】\n\n因此,为了提高磁体的粉末的取向程度,提出了一种使用脉冲磁场的方法而不是传统的静磁场(例如,专利文献1)。\n\n[专利文献1]日本专利申请公开号5-234789\n\n[专利文献2]日本专利申请公开号7-283057\n\n发明的描述\n\n本发明要解决的问题\n\n【0016】\n\n然而,施加脉冲磁场会导致涡流问题以防止提高生产率。\n\n【0017】\n\n通常,当在压模期间施加施加定向磁场的步骤时,渗透率使得施加到腔体(模塑空间)中施加到磁体的定向磁场的方向和强度不受骰子或冲头的影响。使用具有小于1.01的非磁性金属材料(例如,SUS304和高锰钢)形成。由于这些非磁性金属材料具有导电(例如,SUS304和高锰钢的比电阻约为70μΩ·cm),因此当施加脉冲磁场时产生涡电流。由于涡电流的发生产生模具,因此必须加宽脉冲磁场的应用间隔以用于冷却目的,并且存在大规模生产率显着降低的问题。\n\n【0018】\n\n另外,尽管也可以想到从专利文献2中公开的绝缘陶瓷(SiAlon)形成模具,但是作为针对涡流的对策,唾液不足以用于断裂韧性和弯曲强度,以及模具(骰子或不是优选作为冲头的材料。特别地,当基于ND-Fe-B的稀土磁体形成为环形时,如果要从Sialon形成施加压力的管芯,则管芯不能小型化,并且所得到的磁场强度结果减少了。有必要增加磁场施加线圈的尺寸。\n\n【0019】\n\n鉴于上述几点进行了本发明,并且本发明的主要目的是适用于使用脉冲磁场的常规更有效地制造磁体的粉末成型体,以及它是这样的制造方法提供压制成形装置。\n\n[解决问题的手段]\n\n【0020】\n\n本发明的压制成形装置从通孔的下冲击器插入,用于形成腔,从下方插入的下冲头,以及填充腔。压制成形装置设置有磁场将脉冲磁场脉冲磁场的发电机施加1.5 t或更大,10t或更低的磁体粉末,该磁体粉末与上冲头填充有腔的磁体粉末,其中填充在腔体中的磁粉末。根据骰子,主要成分是氧化锆,由含有金属碳化物的导电陶瓷材料形成为5质量%或更高,50质量%以下。\n\n【0021】\n\n在优选的实施方案中,金属碳水化合物是选自NbC,TiC和Wc中的至少一种。\n\n【0022】\n\n在优选实施例中,腔具有圆柱形状。\n\n【0023】\n\n制造本发明的磁体的方法是制备上述压制成形装置的步骤以及将磁体粉末填充在压制成形装置的腔中的步骤,以及通过上部按下磁体粉末的步骤和较低的冲头。施加脉冲磁场为1.5t或更大和10t或更小的步骤。\n\n【0024】\n\n在优选实施例中,施加脉冲磁场的步骤为0.1毫秒或更高,在磁场之后3.5毫秒,脉冲磁场强度增加到最高值,并且施加下一个脉冲磁场的时间是4秒或更短的设定为脉冲磁场到Reposit的应用。\n\n【0025】\n\n在优选的实施方案中,模具的表面温度保持在30℃以下。\n\n【发明效果】\n\n【0026】\n\n根据本发明,提供了一种制造用于磁体的模塑制品的方法,并且使用脉冲磁场在这种制造方法中适当地使用。\n\n实施本发明的最佳方式\n\n【0027】\n\n在下文中,参考附图,将描述根据本发明的实施方案的用于磁体的粉末模制设备的方法及使用它的制造粉末成型体的方法。在下文中,使用稀土合金粉末的示例描述为磁体的粉末,但是本发明不限于此。\n\n【0028】\n\n根据该实施例的压制成形装置100的结构示意性地示于图2中。压模装置100具有芯片20,该模具20具有通孔,用于形成腔体的通孔和容纳芯片20的上端的开口30a,并且形成与模具20的上端表面基本相同的表面是磁场的为了将脉冲磁场施加到腔中的磁体中的粉末,上冲头10a和下冲头10b,用于按压腔室和下冲头10b的馈电板30,以及用于腔内的磁体的粉末。它具有发电机40。模具20通过例如螺钉固定到基部54。模具20的通孔的横截面形状不限于圆形,并且可以是诸如多边形或弓的形状。\n\n【0029】\n\n压制成形装置100的进料板30由绝缘体形成,上表面是光滑的表面。由于馈线板30由绝缘体形成,所以即使磁场发生器40的线圈部分40b施加脉冲磁场,因为在进料板30中不发生场电流,所以发生温度升高或振动。它不会发生。进料板30的尺寸大于馈电箱80触点中粉末的部分。\n\n【0030】\n\n由于进料板30的上表面是光滑的表面,即使进料箱80移动,难以保留在上表面上的稀土合金粉末,磁铁是磁体的粉末,以及氧化稀土合金粉末混合到模塑体中。它被抑制。为了获得这样的优点,进料板30的上表面的平滑度优选为1.0或更小的平均粗糙度Ra。\n\n【0031】\n\n此外,优选的是,进料板30具有弹性模量,使得即使进料箱80在其上表面上移动而导致的情况下也不会变形。\n\n【0032】\n\n可以提及陶瓷和玻璃作为满足这些条件的材料。特别地,可以适当地使用结晶玻璃(例如,由Nippon电玻璃制造的N-11)。 N-11由Nippon Electric Girls制造,维克斯硬度HV:800,年轻的循环:90,000\n\nn / mm2,染料特异性电阻:12.7Ω·cm(室温),渗透率小于1.001。\n\n【0033】\n\n进料箱80也不仅在馈送板30上移动,而且还在馈送板60上移动。进料板60可以与进给板30一体地形成,或者当设置在脉冲磁场不受影响的位置时,使用诸如SUS以及常规的金属材料形成馈线板60。好。\n\n【0034】\n\n在本实施例中,模具20由具有相对高电阻的导电陶瓷形成。导电陶瓷是主要成分的氧化锆,含有浓度为5质量%以上和50质量%或更低的金属碳化物。该金属碳化物优选加入赋予电导率,并且至少一种选自Nbc,TiC和Wc的电导率。\n\n【0035】\n\n含有这种氧化锆作为主要组分的导电陶瓷是比诸如WC的碳化物材料的数百个涡流损失。此外,与不添加金属碳化物用于电导率施加的氧化锆陶瓷相比,它适合作为具有大的幼小模量,硬度HV和强大的压力和摩擦力的骰子的材料。\n\n【0036】\n\n另外,含有NbC,TiC和/或具有主要成分的氧化锆陶瓷的氧化锆陶瓷是氧化锆,5质量%以上和/或Wc是略微涡流损失以表示导电性。另一方面,由于不含这些导电添加剂(金属碳化物)的常规氧化锆陶瓷是绝缘陶瓷,因此根本不会发生涡流损耗。因此,从抑制涡流的观点来看,不希望添加NBC,TIC或WC。然而,本发明人通过将诸如Nbc,TiC或Wc的金属碳化物(例如NbC,TiC或Wc为适当的范围(5质量%或更高,50质量%)来充分设置氧化锆陶瓷中产生的涡流。它已经发现,在抑制低的同时可以改善机械强度的水平。\n\n【0037】\n\n另外,根据实验,当由导电陶瓷形成诸如Sialon的导电陶瓷时,模具(尤其是韧性)的电阻和机械强度太低,因此不能充分降低涡流损失,并且机械原来证明,从强度点低的可靠性低。\n\n【0038】\n\n随着添加到氧化锆陶瓷的金属碳化物,从改善导热率的观点来看,WC是最好的。如果这些金属碳化物的添加量小于5质量%,则陶瓷的可加工性降低,这是不优选的。另外,当添加量超过50质量%时,可以减少韧性,这可能在压制过程中损坏,并且抑制涡流抑制效果的效果是不可取的。\n\n【0039】\n\n上冲头10a和下冲头10b由已知的材料形成。如现有技术描述所述,这些材料优选由渗透性为1.01或更小的非磁性材料形成。例如,高锰钢(相对渗透率:1.001小于1.001,特定电阻:约70μΩ·cm)得到适当形成。在一些情况下,它可以由绝缘材料(上述上述)形成。此外,可以使用冲头内的冷却水等提供机构(例如,JP-A-2000-223336)。此外,在专利No.3193912中描述以除去在模具20和下冲头10b之间获得的粉末和/或冷却/或骰子20的滑动表面和下冲头10b。可以提供给弹出模具20和下冲头10b之间的气体。待喷射的气体是空气或惰性气体(例如氮气),并且可以将润滑剂与这种气体混合。\n\n【0040】\n\n接下来,参考图1和图2.如图2(a)至2(d)所示,将描述根据本发明的实施例的制造稀土合金粉末的模制体的方法。这里,将描述制造圆柱形模制体14b的示例。\n\n【0041】\n\n模具20具有芯部20a和圆柱形部分20b。腔在芯部20a和圆柱形部分20b之间的间隙中限定。上冲头10a和下冲头10b向上和向下移动腔内的内部,然后按填充在腔体中的稀土合金粉末。本实施例中的圆柱形部分20b的内径约为20mm,芯部的直径约为9mm。因此,产生外径为约20mm,内径为约9mm的圆柱形形成成型体,并且是约40mm的高度。\n\n【0042】\n\n使用上述结晶玻璃N-11形成馈线30。进料板30具有圆形开口30a,并且设置成适合于模具20的圆柱形部分20b的上端,上表面基本上大于模具20的上端表面。它是安排。进料板30的开口30a和管芯20之间的间隙设定为0.1mm(至少0.2mm)。这是因为稀土合金粉末在通过馈线通过衬垫方法填充腔体的过程中不会渗透到该间隙部分中。当管芯20的外形是圆柱形并且开口30a是圆形的,模具20和馈电板30可以仅与一个点接触,使得间隙可以设定为较小的方式。\n\n【0043】\n\n另外,如果需要,在气体压力等中提供用于除去侵入该间隙的稀土合金粉末的机制(参见,例如,上述专利No.3193912)。\n\n【0044】\n\n此外,由于磁场发生器40产生的热量不传递到进给板30,因此优选的是在磁场发生器40的支撑板40a的上表面之间提供1μm或更大的间隙。馈线板30的下表面。\n\n【0045】\n\n作为稀土合金粉末12,适当使用R-Fe-B基稀土合金。稀土合金的组合物和制造方法描述于例如美国专利No.4,522,517中。No.4,770,723和4,792,368。在R-Fe-B基稀土合金的典型组合物中,Nd或Pr主要用作R,并且可以部分地由过渡元件(例如CO)部分地替换,B是C.它可以被替换。这里,通过淬火法制备的基于ND-Fe-B的聚集合金(密度为7.5g / cm)3使用通过研磨用喷射研磨机获得的1.5至8μm(例如,约3μm)的粉末,通过研磨获得的平均粒径(FSSS粒度)。合金粉末的表面优选用诸如硬脂酸锌如锌的润滑剂涂覆。\n\n【0046】\n\n首先,如图2所示。如图2A所示,容纳稀土合金粉末12的馈送器箱80在进给板30的上表面上移动并布置成覆盖腔,如图2所示。2(b)。做。此后,使用稀土合金粉末12的重量或使用设置在进料箱80中的搅拌器(未示出)的同时填充稀土合金粉末12的重量。使用光滑方法,在腔中的适当表观密度(例如2.0g / cm3〜2.5克/厘米3可以用合金粉末装。\n\n【0047】\n\n随后,通过升高和降低上冲头10a和/或下冲头10b,腔内的稀土合金粉末是单轴按压的。通常,上冲头10a可以降低,但是可以降低上冲头10a并且可以增加下冲头10b。\n\n【0048】\n\n这里,稀土合金粉末(在最终成型体之前获得合金粉末)“临时形状”\n\n有可能。临时形状体还包括那些不能将形状与移除的空腔保持的那些。当14A达到预定密度时,磁场发生器40施加脉冲磁场。当稀土合金粉末14a的密度低时施加脉冲磁场时,取向的效果低。在本实施例中,稀土合金粉末14a的密度为3.0g / cm3超过4.0g / cm3施加脉冲磁场。\n\n【0049】\n\n为了可靠地执行稀土合金粉末密度在稀土合金粉末的密度处于预定范围的时间上进行施加脉冲磁场的操作,控制上冲头10a和/或下冲头10b的行程,以及临时形式的密度是优选在达到预定密度时停止上冲头10a和/或下冲头10b的行程。可以在该停止时段期间施加脉冲磁场,然后可以恢复按下步骤以获得最终模制体。\n\n【0050】\n\n作为脉冲磁场,优选使用磁场,该磁场在0.1毫秒或更高的时间和3.5毫秒或更小的时间内达到最高磁场强度。例如,可以适当地使用具有图3所示的轮廓的交替阻尼磁场。可以适当地使用图3A。通过使用脉冲磁场,可以在短时间内定向,并且通过使用交替的衰减磁场可以减少模制体的残余磁磁化。脉冲磁场的强度取决于所用材料的矫顽力,但优选在磁场生成线圈的中心轴(空气状况)的1.5吨或更大,10t或更小的范围内(通常为4到6 t)。。如果其他条件相同,则随着线圈的内径减小,磁场强度增加。名称,代替交替衰减磁场,图3中所示的单调衰减磁场。可以使用图3(b)。\n\n【0051】\n\n或者,可以使用脉冲峰值强度不改变的交替磁场,或者如图3所示的脉冲磁场。图3A或(B)可以重复和重复地应用。此外,可以在施加脉冲磁场之后施加静态磁场。\n\n【0052】\n\n当不使用阻尼磁场时,优选进一步应用去磁磁场。如果模制体的残余磁性大,则粉末附着在模制体的表面上,或者模制体彼此紧密接触,因此可以难以处理。\n\n【0053】\n\n在本实施例的压制成型装置100中,管芯20由具有作为主要成分的氧化锆的导电陶瓷形成。如上所述,根据芯片20,由于涡流引起的热量不太可能发生,并且即使以短间隔(例如,4秒或更小)重复施加强脉冲磁场,温度模具20被抑制到约室温。能够。\n\n【0054】\n\n如上所述,当使用根据本发明的压制成型装置100时,即使施加脉冲磁场,螺旋电流也不太可能在与稀土合金粉末接触的骰子中发生,以及温度可以抑制上升,因此模塑循环时间是可以缩短。另外,冷却水的温度低于室温不必冷却模具。当使用这种低温冷却水冷却管芯时,在模具表面上可能发生冷凝,并且稀土合金粉末的特性可以降低,但根据本发明,避免了这种问题。\n\n【0055】\n\n为了以预定方向均匀地施加脉冲磁场(这里,在这里,如图2(c)所示,如图2(c)所示,稀土合金粉末14a是磁场优选在发电机40的线圈部分40b的中心处。另一方面,下冲头10b的行程由装置固定。因此,为了确保用于压制各种尺寸的模制体的余量,馈线板30的厚度优选为薄,优选地为10mm或更小。然而,厚度优选为2mm或更大,因为强度较低,强度较低。此外,当它太薄时,由线圈部分40b产生的热量不能充分绝缘(绝缘),并且热量被传递到粉末,使得进料板30的厚度优选为2mm或更大。\n\n【0056】\n\n磁场发生器40通常具有用于支撑线圈部分40b的支撑板40a,如图2所示。尽管支撑板40a通常由树脂材料形成,但是使用上述结晶玻璃等通过形成支撑板40a,可以使用支撑板40a作为馈送板30。当采用这样的配置时,馈线板30基本上与磁场发生器40的线圈部分40b接触,从而可以获得优点。当线圈部分40b中的发热严重时,隔热材料可以插入在进给板30和线圈部分40b之间。\n\n【0057】\n\n在施加脉冲磁场后,最终模制体的密度例如是4.0g / cm3〜4.5克/厘米3再次替换以获得模制体14b。如图1所示。例如,例如,通过降低模具20取出模制体14b。\n\n【0058】\n\n通过已知方法烧结所得模制体14b。基于ND-Fe-B的烧结合金在AR气氛中在AR气氛下在Ar气氛下进行烧结处理,然后在约500至700℃的Ar气氛中在几小时内进行。通过执行老龄化进程。\n\n【0059】\n\n在上述烧结/老化处理之后,通过已知方法将该方法切割成所需的形状,并且进行诸如抛光的处理步骤。\n\n【0060】\n\n在本实施例中,应用本发明以压制稀土合金粉末的模塑,但也可以应用于压制与稀土合金粉末和树脂粉末混合的粘合磁体粉末的形成。\n\n【0061】\n\n(例子)\n\n在下文中,将描述本发明的实施例和比较例。\n\n【0062】\n\n70%重量的ZrO作为一个例子2使用碳化物(WC)模具用作使用由NbC组成的陶瓷模具,其具有30质量%的陶瓷模具。更具体地,在图1的压制成型装置100中,在其中设置了上述每一个,脉冲磁场(高磁场强度:5.6T,阻尼率8​​2%,脉冲宽度:1.7毫秒)。连续四次。并且在重复暂停循环后40秒后,检查模具的表面温度的变化(室温23℃)。\n\n【0063】\n\n图。图4是示出施加的脉冲磁场的波形的曲线图。在比较例的情况下,最大磁场强度为3.87吨,上升时间为1.39毫秒,但在该示例的情况下,最大磁场强度为5.51T,上升时间为0.85毫秒。在空气芯的情况下,最大磁场强度为5.60t,上升时间为0.87毫秒。因此,当施加到磁场产生线圈的电流是相同的尺寸时,根据本发明的实施例,可以应用更强的脉冲磁场。\n\n【0064】\n\n图5是表示温度变化的图。该图的垂直轴表示管芯的表面温度,横轴表示经过的时间。如图5所示,如图5所示,本实施方式的模具表面的温度升高至约26.7℃,但在比较例中,超过40℃。\n\n【0065】\n\n如上所述,根据本发明的实施例,由于涡流损耗不太可能发生,因此抑制了发热,因此可以以短间隔连续地施加具有高峰强度的脉冲磁场。结果,与比较例相比,最终获得的磁体的残余磁通密度Br也提高。\n\n【工业可用性】\n\n【0066】\n\n如上所述,由于本发明的压制装置设置有具有低涡流损失的骰子和高机械强度,因此磁场强度在短升起时间达到峰值的脉冲磁场,所以磁铁特性优异的磁铁是批量生产的。\n\n[简要描述;简介]\n\n【0067】\n\n【图1】图3是通过本发明的实施方式示出通常的压制成形装置100的结构的透视图。\n\n【图2】(a) - (d)是根据本发明的一个实施方案的用于说明稀土磁体的粉末模制体的制造方法中的方法的示意性横截面图。\n\n图3.(a)和(b)是示出根据本发明的实施例的用于制造稀土磁体的粉末成型体的制造方法的脉冲磁场的曲线图。\n\n图4.图3是表示施加的脉冲磁场的波形的图。\n\n图5.图3是表示脉冲磁场的应用如何改变模具的表面温度。垂直轴是模具的表面温度,水平轴是经过的时间。\n\n[标志的说明]\n\n【0068】\n\n10A拳\n\n10b下拳\n\n20骰子\n\n20A核心俱乐部\n\n20B圆柱形部分\n\n30模板\n\n30A Di-Blate开口\n\n40磁场发电机\n\n40A支撑板\n\n40B线圈部分\n\n52个职位\n\n54个基板\n\n60个饲养板\n\n80个饲养箱\n\n80a馈线盒的底部');
INSERT INTO `os_patent_instruction_text` VALUES (13014, 22843, '【技術分野】\n\n本発明は、吸収線量3,000Gy以上の放射線に被曝される環境で使用される永久磁石に関しており、特に、物性研究に使われるシンクロトロンや、放射線医療の分野で使われるサイクロトロンなどに用いることができる粒子線加速器用永久磁石に関している。また、本発明は、このような永久磁石を複数備えた磁界発生装置に関している。\n\n【背景技術】\n\n粒子線加速器には、物性研究のための高エネルギー粒子線の発生に使われるシンクロトロンや、ガン検診に使われる放射性同位体を製造するための小型のサイクロトロンなとが\n\nある。最近では、診断だけでなく、陽子線をガン患者の患部に直接照射する放射線治療にも加速器が用いられ始めている。\n\n粒子線加速器は、粒子線を入射させる機構、電荷をもつ粒子に高周波電場を加えて加速するための機構、および粒子線を所望の方向に偏向させるための磁界を印加する機構を備えている。\n\n例えばシンクロトロンの場合は、主リングまたは蓄積リングと呼ばれる環状の軌道内で粒子線を走らせるための偏向磁界、軌道内の粒子線を収束させるための収束磁界、および、主リングへの粒子線の入射または主リングからの粒子線の取り出しのための偏向磁界が用いられる。一方、サイクロトロンの場合では、粒子線が渦巻き状に加速するための均一な静磁界が用いられる。\n\n従来、シンクロトロンおよびサイクロトロンのいずれについても、上記の磁界は、電磁石によって発生させられていた。\n\n粒子線加速器には、収束磁界のように原理的に磁界強度を可変とすることによって調整可能にしなければならない箇所もある一方、運転中は一定の静磁界が必要な箇所もある。シンクロトロンのビーム取出口では、主リングまたは蓄積リング中を走る粒子線に「キッカー磁石」と呼ばれる電磁石でパルス状の磁界を与えて粒子線のコースをわずかに変化させる。その粒子線は、更に「セプタム磁石」と呼ばれる電磁石によって大きく偏向されることになる。このようなセプタム磁石は、大きくて均一な静磁界を形成することが求められるとともに、粒子加速器の主リングの近くに設置されるため、セプタム磁石が強磁界を発生する空間(磁界発生空間)から外部の領域へ漏洩する磁界を可能な限り小さくする(例えば5mT以下)ことが必要である。\n\nなお、サイクロトロンの場合は、前述のように、均一な静磁界を形成することが必要であるが、加速粒子として陽子を使用する場合、陽子は電子に比べて質量が大きいため、陽子を偏向するために1.0T以上の強い静磁界が必要とされる。\n\n粒子線加速器用に用いられる磁石については、特開昭64-72502号公報、特開平8-255726号公報、特開2001-28300号公報、特開2003-305021号公報などに記載されている。\n\n前述のように、粒子加速器用に用いられる電磁石は強い磁界を発生することが求められるため、動作に際して電磁石のコイルに大電流を流す必要がある。\n\nしかし、コイルに大電流を流すと、コイルで発生するジュール熱が多大になるため、この熱を速やかに取り除く必要があり、そのためにコイル周辺に冷却機構を設ける必要がある。\n\n更に、電磁石を用いる場合、電磁石の発生する断続的な強い磁界のため、電磁石を構成する各部材が破損しやすいという問題もある。また、電磁石に用いられる大量のヨーク材は、主として鉄からなるため、ビームラインから発生する放射線の照射によって放射化されやすい。放射化とは、加速粒子線などを照射された物質の一部が放射性核種に転換されて、自ら放射能を持つようになる現象である。ヨーク材が放射化されてしまうと、電磁石のメインテナンスのために作業者が電磁石に接近することが困難になる。\n\nこのように、粒子加速器に電磁石を用いる場合に生じる種々の問題を避けるため、電磁石に代えて永久磁石を用いることが可能である。例えば、米国のフェルミ研究所における粒子加速器の蓄積リングには、ハードフェライト磁石が採用されている。ハードフェライトは、小型のままでは強い偏向磁界(例えば約2T)を発生することができず、小型の粒子加速器を病院などに普及させることができなくなる。\n\n2-17系SmCo焼結磁石は、放射線照射による減磁が少なく、最大エネルギー積が240kJ/m3を超える高性能磁石である。このため、粒子加速器のための強い磁界を発生するために、2-17系SmCo焼結磁石を用いることも可能である。しかし、この磁石の主要成分であり、かつ必須元素でもあるCoには、放射化しやすいという欠点があり、メインテナンスを考えると加速器への採用は難しい。\n\nNd-Fe-B系焼結磁石は、最大エネルギー積が320kJ/m3を超える高性能を発揮し得るため、加速器の小型化に威力を発揮、放射化も2-17系SmCo焼結磁石と\n\n比較して生じにくい利点がある。しかし、Nd-Fe-B系焼結磁石は、放射線の照射によって減磁しやすいという欠点を有している。\n\n図1を参照しながら、Nd-Fe-B系焼結磁石が放射線照射によって減磁するメカニズムを説明する。図1は、Nd-Fe-B系焼結磁石の一部を拡大した模式図である。図中の○は、Nd2Fe14B型結晶を構成する原子を示している。相対的に小さな●は、エネルギーEOの放射線(高エネルギー粒子)を示しており、この粒子は、矢印に沿って飛行し、領域Rの中心に位置する原子に衝突するものとする。なお、放射線は、陽子線、中性子線、アルファ線、ベータ線、重イオン粒子線のような粒子線であってもよいし、ガンマ線、X線のような電磁波であってもよい。\n\n図1に示すように、放射線がNd-Fe-B系焼結磁石における原子内の原子核に衝突すると、衝突された原子がはじき飛ばされる場合もあるが、多くの場合、原子は弾き飛ばされず、入射エネルギーEOが熱として磁石に吸収され、衝突原子の周辺における格子振動を増大させる。その結果、領域Rで局所的な温度上昇が生じる。放射線のエネルギーEOが領域Rに吸収される前の温度をTL、吸収後の温度をTHとすると、温度上昇の大きさは、ΔT=TH-TLで表され、エネルギーEOに比例する。放射線照射後の温度THが磁石のキュリー温度TCよりも高くなる場合、磁石の保磁力HcJや領域Rのパーミアンス係数PCの大きさにかかわらず、領域Rは冷却過程で磁化反転をおこす。Nd-Fe-B系焼結磁石の保磁力発現メカニズムは、ニュークリエーション型であるため、領域Rが磁気反転を引き起こすと、領域Rを含む1つの結晶粒の全体が磁化反転を起こすことになる。このような磁化反転は、放射線の照射量が増えるにつれ、焼結磁石のあらゆる領域(結晶粒)で進行し、やがては焼結磁石の全体が大きく減磁する。\n\nこのようにして減磁が進むと、一定の強力な磁界を発生させることができず、したがって、従来のNd-Fe-B系焼結磁石を用いて粒子線加速器用磁界発生装置を作製することは実用化に至っていない。\n\n本発明はかかる諸点に鑑みてなされたものであり、その主な目的は、Nd-Fe-B系磁石を用いながら放射線照射によっても減磁しにくい粒子線加速器用永久磁石および磁界発生装置を提供することにある。\n\n【発明の開示】\n\n本発明の粒子線加速器用永久磁石は、吸収線量3,000Gy以上の放射線に被曝される環境で使用される粒子線加速器用永久磁石であって、R(希土類元素のうちの少なくとも1種)、B(硼素)、およびTM(遷移元素のうち少なくとも1種で、Feを含有するもの)、および不可避的に含まれる不純物元素を含有し、パーミアンス係数が0.5以上の着磁状態にあり、かつ保磁力HcJが1.6MA/m以上の焼結磁石である粒子線加速器用永久磁石。\n\n好ましい実施形態において、前記焼結磁石の組成比は、R:25.0〜40.0質量%、B:0.8〜1.2質量%、不可避的に含まれる不純物元素、およびTM:残部である。\n\n好ましい実施形態においては、RがNdおよび/またはPrを必須元素として含む。\n\n好ましい実施形態においては、RがDyおよび/またはTbを更に含む。\n\n好ましい実施形態においては、TMが磁石全体の1.0質量%以下のCoを含む。\n\n本発明の磁界発生装置は、吸収線量3,000Gy以上の放射線に被曝される環境で使用される磁界発生装置であって、磁界発生空間を形成するように略環状に配置された複数の永久磁石を備えており、前記永久磁石は、R(希土類元素のうちの少なくとも1種)、B(硼素)、およびTM(遷移元素のうち少なくとも1種で、Feを含有するもの)、および不可避的に含まれる不純物元素を含有し、パーミアンス係数が0.5以上の着磁状態にあり、かつ保磁力HcJが1.6MA/m以上の焼結磁石である。\n\n好ましい実施形態において、前記焼結磁石の組成比は、R:25.0〜40.0質量%、B:0.8〜1.2質量%、不可避的に含まれる不純物元素、およびTM:残部である。\n\n好ましい実施形態において、前記複数の永久磁石は、前記磁界発生空間を挟んで対向す\n\nる第1磁石および第2磁石を含み、前記第1磁石および第2磁石は、前記磁界発生空間の中央部を通る直線であって前記中央部における磁界方向に平行な直線に沿って配列されている。\n\n好ましい実施形態において、前記複数の永久磁石によって構成される磁石体の形状は、前記直線を含む第1の平面に関して略対称であるが、前記直線を含み前記第1の平面に垂直な第2の平面に関しては非対称である。\n\n好ましい実施形態において、前記磁石体の外周面の少なくとも一部は強磁性体によって覆われている。\n\n好ましい実施形態において、前記複数の永久磁石は、前記第1磁石を挟みこむ位置に配置された第3磁石および第4磁石と、前記第2磁石を挟みこむ位置に配置された第5磁石および第6磁石とを含み、前記第2の平面に垂直な方向に沿って計測した前記第3磁石のサイズは、前記第2の平面に垂直な方向に沿って計測した前記第4磁石のサイズより小さく、前記第2の平面に垂直な方向に沿って計測した前記第5磁石のサイズは、前記第2の平面に垂直な方向に沿って計測した前記第6磁石のサイズより小さい。\n\n好ましい実施形態において、前記磁界発生空間に形成される磁界の強度を変化させるための付加的な磁石をさらに備え、前記付加的な磁石は、前記複数の永久磁石の少なくとも一部と磁気的に結合する可動磁気回路部分を形成し、かつ、前記磁界発生空間に対する相対位置関係が可変に調節できるように保持されている。\n\n好ましい実施形態において、前記可動磁気回路部分は、複数の磁石を構成要素として含み、前記複数の磁石は水平方向に移動可能である。\n\n好ましい実施形態において、前記複数の永久磁石は、前記第4磁石と前記第6磁石との間に配置された第7磁石を含んでいる。\n\n好ましい実施形態において、前記永久磁石の温度を室温よりも低い温度に保持する機構を更に備えている。\n\n好ましい実施形態において、前記第1磁石および前記第2磁石の対向面には、前記第2の平面からの距離に応じて厚さが変化する強磁性体が設けられている。\n\n好ましい実施形態において、前記複数の永久磁石の各々は、直方体形状を有している。\n\n本発明の粒子線加速器は、上記のいずれかの磁界発生装置と、前記磁界発生装置と放射線飛来源との間に配置された厚さ0.1mm以上の遮蔽板とを備えている。\n\n【図面の簡単な説明】\n\n図1は、放射線に被曝した磁石の結晶構造を表す模式図である。図中の丸印は、磁石を構成する原子を表している。\n\n図2は、本発明の永久磁石が好適に用いられる粒子線加速器の構成を模式的に示している図である。\n\n図3は、永久磁石を用いたセプタム磁石の構造を示す模式的斜視図である。\n\n図4は、図3に示す構成の改変例を示す斜視図である。\n\n【発明を実施するための最良の形態】\n\n図面を参照しながら、本発明の好ましい実施形態を説明する。\n\n図2は、本発明の永久磁石が好適に用いられる粒子線加速器の構成を模式的に示している。\n\n図2の粒子線加速器は、少なくとも、粒子線を加速するための主リングMRと、主リング中を走る粒子線に対してパルス状の磁界を及ぼすキッカー磁石Kと、キッカー磁石Kによって主リング内のコースから分離させられた粒子線を更に偏向するためのセプタム磁石S1、S2、S3とを備えている。\n\n主リングMRやキッカー磁石Kの構成は、従来のものと同様であり、本実施形態で特徴的な点は、セプタム磁石の構成にある。このため、以下においては、セプタム磁石について、その詳細を説明する。\n\n図3を参照する。図3は、セプタム磁石S1、S2、S3の少なくとも1つ(好ましくは全てのセプタム磁石)に用いられる本実施形態の磁界発生装置を示している。図3には、XYZ座標が示されている。この座標の原点は、ビームトランスポートラインが通る磁\n\n界発生空間の中央に位置しているものとする。Z軸方向は、ビームトランスポートライン内を飛行する粒子に及ぼされる磁界の向きに平行であり、Y軸方向は、ビームトランスポートライン内を飛行する粒子の進行方向に平行である。X軸方向は、ビームトランスポートライン内を飛行する粒子が陽子である場合に、その陽子に及ぶ力の向きに平行である。なお、粒子が電子などの負に荷電した粒子である場合、図3の磁界発生装置の構成のままでは、その粒子に及ぶ力がX軸方向に対して反平行となる。この磁界発生装置は、粒子に対してビームラインから離れる方向に力を付与する必要があるため、負に荷電している粒子の場合は、各永久磁石の磁化方向を反転し、磁界発生空間に形成する磁界の向きを-Z軸方向に一致させる必要がある。\n\n本実施形態の磁界発生装置は、主リング内のビームラインの近くに配置され、かつ、ビームラインから分離したビームトランスポートラインに対して強い偏向磁界を付与するため、ビームトランスポートラインを取り囲むようにして複数の永久磁石が略リング状に配置されている。\n\nこの磁界発生装置を構成する永久磁石は、何れも、Nd-Fe-B系焼結磁石であり、R(希土類元素のうちの少なくとも1種)、B(硼素)、およびTM(遷移元素のうち少なくとも1種で、Feを含有するもの)、および不可避的に含まれる不純物元素を含有している。好ましい形態では、R:25.0〜40.0質量%、B:0.8〜1.2質量%、TM:残部、および、不可避的に含まれる不純物元素を含有している。また、本実施形態の磁石は、パーミアンス係数が0.5以上の着磁状態にあり、かつ、保磁力HcJが1.6MA/m以上である。この永久磁石の組成や磁気特性などの詳細については、後述し、ここでは、この永久磁石によって構成される磁気回路を説明する。\n\nさらに、上記の永久磁石を用いて磁気回路を形成した後、高温下にさらされると、磁界の均一度が低下する可能性がある。このような磁界均一度の低下を防止するためには、特開2003-305021号公報に開示されている熱処理(例えば40〜70℃の加熱処理)を上記永久磁石に対して施しておくことが好ましい。\n\n本実施形態の磁界発生装置は、それぞれが直方体形状を有する7つの永久磁石領域から構成され、これらの永久磁石を磁界発生空間の周りに略リング状に配列することによってハルバッハ型磁界回路に類似した磁気回路が形成されている。なお、各磁石領域は、図3に示す磁気回路を形成する複数の永久磁石のうち、第1磁石領域Aおよび第2磁石領域Bは、磁界発生空間を挟んで対向しており、磁界発生空間の中央部を通る直線(Z軸)に沿って配列されている。\n\n第3磁石領域Cおよび第4磁石領域Dは、第1磁石領域Aを挟みこむようにして第1磁石領域Aの両側に配置され、第5磁石領域Eおよび第6磁石領域Fは、第2磁石領域Bを挟みこむようにして第2磁石領域Bの両側に配置されている。また、第4磁石領域Dと第6磁石領域Fとの間には、第7磁石領域Gが配置されている。\n\n第1磁石領域Aおよび第2磁石領域Bの磁化方向は、磁界発生空間の中央部に形成する磁界の方向と一致し、Z軸方向を向いている。これに対し、第3磁石領域Cおよび第6磁石領域Fの磁化方向はX軸方向を向き、第4磁石領域Dおよび第5磁石領域Eの磁化方向は-X軸方向を向いている。第7磁石領域Gの磁化方向は-Z軸方向を向き、第1磁石領域Aおよび第2磁石領域Bの磁化方向とは反平行の関係にある。\n\nこのように7つの永久磁石領域A〜Gは、中央部に磁界発生空間を形成するように略リング状に配列されているが、完全なリング状構造は形成されおらず、ビームラインとビームトランスポートラインとの間には永久磁石の存在しない部分が設けられている。このため、図3に示す磁石体(磁気回路)は、厳密な意味では「ハルバッハ型」でなく、ギャップを有する「C型(コの字型)」の構造を有していることになる。\n\n磁界発生空間の中央を通る前記の直線(Z軸)を含む第1の平面(XZ面)と、このZ軸を含み第1の平面に垂直な第2の平面(YZ面)を仮想的に考えると、7つの永久磁石領域A〜Gによって構成される磁石体(磁器回路)の形状は、第1の平面(XZ平面)に関して略対称であるが、第2の平面(YZ面)に関しては非対称である。すなわち、YZ面に垂直な方向(X軸方向)に沿って計測した第3磁石領域Cおよび第5磁石領域Eのサ\n\nイズ(X方向サイズ)は、第4磁石領域Dおよび第6磁石領域FのX方向サイズより小さくなるように設計されている。\n\nこのような左右非対称構造の磁気回路を採用する理由は、ビームラインとビームトランスポートラインとの間の距離が小さい場合においても、強力な磁界を発生させるためである。図2に示すセプタム磁石S1は、主リングMRに最も近い位置に置かれるが、従来のハルバッハ型構造の磁器回路を採用したならば、このような位置に置くことは困難になる。これに対し、本実施形態の構成によれば、図3に示す構成の磁界発生装置をセプタム磁石S1に用いることが可能となる。なお、各磁石領域は、より小型の磁石体を重ね合わせたものであってよい。\n\n磁界発生空間の磁界強度を変化させるため、図4に示すような可動磁気回路部分を形成するように他の永久磁石を付加しても良い。図4に示す可動磁気回路部分は、第8磁石領域H、第9磁石領域I、第10磁石領域J、および第11磁石領域Kを有している。第8磁石領域Hおよび第9磁石領域Iは、それぞれ、第1磁石領域Aおよび第4磁石領域Dと同様の方向に磁化されている。一方、第10磁石領域Jおよび第11磁石領域Kは、それぞれ。第2磁石領域Bおよび第6磁石領域Fと同様の方向に磁化されている。\n\n第8磁石領域H、第9磁石領域I、第10磁石領域J、および第11磁石領域Kは、水平方向に移動できるように保持されている。これらの磁石を図4において左方向に徐々に移動させてゆくと、最終的には、第8磁石領域Hおよび第9磁石領域Iは、それぞれ、第1磁石領域Aおよび第4磁石領域Dの真上に位置し、第10磁石領域Jおよび第11磁石領域Kは、それぞれ、第2磁石領域Bおよび第6磁石領域Fの真下に位置することになる。このときの図4に示す磁界発生装置は、図3の磁界発生装置における第1磁石領域Aおよび第4磁石領域D、ならびに第2磁石領域Bおよび第6磁石領域Fの各々を上下に2分した構成と類似した構成を有することになる。\n\n上記の第8磁石領域H、第9磁石領域I、第10磁石領域J、および第11磁石領域Kを水平方向に移動させ、これらの磁石領域の位置を調節することにより、磁界発生空間に形成される磁界の強度を所定範囲内で磁場分布を大きく乱すことなく任意に変化させることが可能になる。\n\nまた、図4には示していないが、漏洩磁界を低減したり、組み立てを容易にするため、磁石H、I、J、Kの外周部に鉄、鉄·ニッケル合金、鉄·コバルト合金などの高飽和磁束密度材料からなる部材を配置してもよい。\n\nこのような可動磁界回路部分を形成するために必要な磁石領域の構成や磁石数は、図4に示すものに限定されない。\n\nなお、磁石H、I、J、Kを可動させる機構については、公知のリニアガイド、ネジ、ベアリングモータなどを使用することができる。また、位置決めには、公知のセンサや磁気スケールを使用することができる。\n\nなお、ビームラインとビームトランスポートラインとの分岐点では、粒子線照射による放射化が特に生じやすい。このため、放射化した部材からセプタム磁石への粒子線照射が問題になる。本実施形態では、後述するように、放射線照射によってほとんど減磁しない焼結磁石を採用しているが、それでも、可能な限り、粒子線の照射量を低減することが好ましい。このため、磁石の表面と放射線の飛来源との間に遮蔽板を配置すると、磁石への被曝量を低減できるので好ましい。遮蔽板の厚さが0.1mm未満であると、被曝量の低減に効果があまりないので、遮蔽板の厚さは0.1mm以上であることが好ましい。遮蔽板の材料としては、例えば、熱中性子に対する散乱断面積の大きいボロンの同位体10Bや通常のボロンを多く含んだボロンステンレス材などを用いることが好ましい。\n\nまた、磁石の温度を室温よりも低い温度に保持することが好ましい。磁石を冷却する機構を設けた場合、磁石温度が室温に略等しい場合に比べて保磁力が向上する。また、図1に示す領域Rの温度上昇後の温度THも低くなるため、被曝時の減磁が少なくなるため好ましい。\n\n磁石を冷却する手段としては、液体窒素、液体ヘリウム、固体二酸化炭素などの寒剤を用いたり、循環型の冷媒やペルチェ素子を用いた冷凍装置を用いることができる。磁石を\n\n冷却する場合、RにNdを含めるかわりにPrを含有させれば、Nd系の磁石に見られる低温でのスピン再配列現象に伴う残留磁束密度の低下を防止することができるので好ましい。また、磁石材料の放射化を防止するには、TMにCoを含ませない組成にすることが好ましい。R-TM-B焼結磁石において、Coは必須元素ではないので、Coを含有させない磁石組成は極めて容易に実現できる。\n\n本発明の磁石組成は、25.0〜40.0質量%のR(希土類元素のうちの少なくとも1種)と、0.8〜1.2質量%のB(硼素)とを含有し、残部がTM(遷移元素のうち少なくとも1種で、Feを含有する)である。ただし、不可避的に含まれる不純物元素を含有していても良い。Rが25.0質量%未満であると、保磁力が低下し、Rが40.0質量%を越えると、残留磁束密度が低下する。Rの好ましい範囲は29.0〜32.0質量%である。RがNdの他にDy、および/あるいはTbを含有すると、固有保磁力を高めることができるので更に好ましい。Dy、および/あるいはTbの磁石組成に占める割合は2.5質量%以上であることが好ましい。B(硼素)が0.8質量%未満であると保磁力が低下し、1.2質量%を越えると残留磁束密度が低下する。TMがFeを含有しないと残留磁束密度が低下するので、TMはFeを必ず含む。TMにおけるFeの含有率は50質量%以上であることが好ましい。\n\n本実施形態におけるR-TM-B系焼結磁石は、例えば原料合金の粉砕、磁界中成形、真空雰囲気中での焼結、熱処理、機械加工、表面コーティングなどの工程を行うことによって製造される。こうして作成されるR-TM-B系焼結磁石の密度は7.5g/cm3以上、結晶粒径は1〜20μmであることが好ましい。より好ましい結晶粒径の範囲は5〜10μmである。\n\n本実施形態におけるR-TM-B系焼結磁石は、パーミアンス係数が0.5以上での着磁状態にあり、吸収線量3,000Gy以上の放射線に被曝させたとき、その表面磁束密度の低下率が5%未満となるように組成が調節されている。表面磁束密度の低下率が5%以上になると、磁気回路としての安定性に欠けるため好ましくない。また、パーミアンス係数が0.5未満となる形状を有する磁石は、磁石内部に発生する反磁界が大きくなるため、同じ条件で被曝させた場合でも表面磁束密度の低下率が大きくなる傾向がある。このため、本発明では、パーミアンス係数を0.5以上に限定している。\n\nなお、本明細書において、磁石の吸収線量とは、被曝時間の長短にかかわらず、磁石が吸収した線量の総和を表すものとする。3,000Gyの吸収線量は、磁石が1kG当たり3,000Jの放射線エネルギーを吸収したときの線量を意味する。\n\n1kGの磁石が3,000Jの放射線エネルギーを吸収し、そのエネルギーがすべて熱に変換された場合における磁石の温度上昇を見積もると、磁石の比熱を0.5JK-1g-1として、磁石全体の温度上昇は6Kとなる。6Kの温度上昇は、熱減磁が大きな問題となるような大きさではない。しかし、従来の磁石では、前述したように、局所的な温度上昇によっても磁化反転が生じ、表面磁束密度の低下が起こる。\n\n【実施例】\n\n【実施例1】\n\nまず、表1に示すように、Nd、Dy、B、Fe、および不可避的に含有される元素を含む組成のR-TM-B系原料粉末を用意した。粉末の平均粒径は3.0μmであった。この粉末を磁界中で成形した後、真空中において1060℃、4hの焼結を行い、焼結磁石素材を作製した。この焼結磁石素材から採取した試験片の着磁後における磁気特性(室温)を表2に示す。また、表2には、各焼結磁石素材のキュリー点(Tc)を記載している。\n\n\n\n\n\n次に、得られた焼結磁石素材を機械的に加工し、着磁方向が10mm、磁化困難方向が34mm四方の直方体形状を有する磁石加工品を作製した。次に、これらの磁石加工品を、表1に示す各組成につき、2個ずつ着磁した。\n\nこの後、同一組成を有する2個の磁石加工品のうちの一方の磁石のN極と、他方の磁石のS極とに、それぞれ、ポールピースを吸着させた。各ホールピースは、厚さ1mm、長さ34mm四方の鉄板から作製した。さらに、両方のポールピース同士を、スペーサを挟んで吸着させ、1対の磁石試料を完成させた。スペーサは、厚さ1.65mm、長さ34mm四方のアクリル板から作製し、スペーサの中央部には巾5mmの欠落部を設けた。この欠落部からガウスメータのホール素子を挿入し、ギャップ間の中心における磁束量を測定できるようにした。このようにして作製した磁石試料のパーミアンス係数Pc(B/μOH)の平均値は1.2であった。\n\n上記磁石試料を、陽子シンクロトロン加速器の主リングのビーム取り出し口に設置されたセプタム電磁石のそばに配置した。磁石試料とビームラインとの距離は85cmに設定した。\n\n次に、加速された陽子がビームラインの配管と衝突する際に発生する中性子によって磁石試料を被曝させた。磁石試料の吸収線量は、磁石試料のそばに設置したアルミニウム試料の放射化の程度によって測定した。磁石試料の吸収線量が3,500Gyに達したとき、磁石試料の中心磁束を測定した。被曝前の測定値と比較して、被曝前後における表面磁束の低下率を求めた結果を表3に示す。\n\n\n\n(比較例1)\n\n表1に示した組成を有する焼結磁石を実施例1と全く同様の製造条件で作製し、表2に示す磁気特性を有する焼結磁石素材を得た。得られた磁石素材について、実施例1と同様の機械加工と被曝試験を行った。表3には、磁石の吸収線量が3,500Gyに達したときの磁石試料(比較例1)の中心磁束の低下率を示している。\n\n表3から、実施例1〜3については、3,500Gyの吸収線量に達するまで放射線に被曝させた場合でも、表面磁束の低下率が5%以下に抑えられることがわかる。このような表面磁束の低下率は、実用的に問題のないレベルである。これに対し、比較例1〜2では、表面磁束の低下率が5%を越えている。\n\n表2に示すように、実施例と比較例との間にキュリー点の差異はほとんどない。図1を参照しながら説明した考え方によれば、キュリー点が同レベルにあれば、保磁力の大きさによらず、放射線照射による減磁は同程度に進行すると考えるべきであるが、実際には、保磁力が高いほど減磁率が小さくなるとという予想外の結果が得られた。\n\n【実施例2】\n\nまず、Nd、Dy、B、Fe、および不可避的に含有される元素からなる組成を有し、平均粒径が3.0μmのR-TM-B系原料紛末を用意した。この粉末を磁界中で成形した後、真空中で1060℃、4hの焼結を行った。こうして、Ndが28.5質量%、Dyが2.5質量%、Bが1.0質量%、Coが1.0質量%、残部がFeからなる組成の焼結磁石素材を作製した。これらの焼結磁石素材から採取した試験片の着磁後の室温における磁気特性は、Brが1.33T、HcJが1.3MA/m、(BH)maxが342kJ/m3であった。\n\n次に、上記の焼結磁石素材を機械的に加工して、直方体磁石を作製し、着磁した。着磁後の直方体磁石を用いて、図3に示す構成の磁界発生装置を組み立てた。なお、図3に示す個々の各磁石領域を一個の磁石素材で構成することは困難であるため、多数の小さな磁石素材ブロックを相互に接着することにより、図3の磁界発生装置を組み立てた。\n\nこのような磁界発生装置において、対向させた鉄製シムの間に発生する磁界は1.10Tであった。本実施例における鉄製シムの各々は、対向面側に傾斜部を有している。この傾斜部の存在により、対向する鉄製シムの間隔が図3のX軸に沿って変化している。鉄製シムの形状を適切に設計することにより、発生磁界の均一度を高めることができる。図3における磁界強度のX軸方向における均一性は、装置の略中央に位置する磁界発生空間において±3%以内であり、また、図3における磁界発生装置の左側の位置における漏洩磁界は1.4mTであった。\n\n作製した磁界発生装置をセプタム磁石として実際の粒子加速器に組み込む場合には、図3に示したように磁界発生部の中心にキッカー磁石から分岐されたビームトランスポートのステンレス管を挿入し、図3の左側の鉄板の磁気シールドの外側に主リングのビームラ\n\nインのステンレス管が通るように磁界発生装置を配置すればよい。このとき、ビームトランスポートのステンレス管には1.0T以上の強い磁界で加速粒子を偏向することができる。\n\n本実施例では、主リングのビームラインのステンレス管への漏洩磁界は小さいので、好ましくない偏向を加えるおそれがない。また、磁石中のCo含有料が少ないので、Sm-Co系焼結磁石を用いた磁界発生装置に比べて放射化に伴う磁界発生装置からの放射線の発生景も少ないと予想され、磁界発生装置のメインテナンスの際の作業者の被曝量を低減することが可能である。\n\n実施例1の結果から、本願発明のHcJが1.6MA/m以上の磁石を用いて実施例2に示した磁界発生装置を組み立てたとき、磁界発生装置を構成する磁石は加速器の運転中に発生する中性子により被曝しても減磁率が小さくできる。\n\nこのようにして、電力消費や冷却水の循環なしに安定で均一度の高い静磁界の発生が可能で、かつ加速器運転時に発生する放射線に被曝しても発生磁界の低下がなく、従来の電磁石式のセプタム磁石と同等の機能を有するNd-Fe-B永久磁石式のセプタム磁石を提供できることがわかる。\n\n【産業上の利用可能性】\n\n本発明によれば、Nd-Fe-B系磁石を用いながら、放射線照射によっても減磁しにくい粒子線加速器用永久磁石と磁界発生装置を提供することができる。本発明によれば、電磁石のように多量の電力を消費することなく、粒子加速器用途に必要な強い磁界を発生することができる。', '【技术领域】\n\n本发明涉及一种在暴露于3,000GY吸收剂量3,000Gy的辐射的环境中使用的永磁体,并且可以用于在物理性质和用于辐射医疗领域中使用的时装的同步磁体中,其涉及用于粒子射线的永磁体加速器。此外,本发明涉及一种具有多个这样的永磁体的磁场发生器。\n\n发明背景\n\n粒子射线促进剂包括用于产生用于物理性质研究的高能粒子线的同步rotron,以及用于产生用于癌症筛选的放射性同位素的小型回旋加速器。\n\n是。最近,加速器也开始用于放射治疗,不仅诊断,还可以直接辐射辐射辐射,直接照射癌症患者的受影响的区域。\n\n粒径加速器包括用于入射粒子线的机构,一种用于在具有电荷的颗粒上加速高频电场的机制,以及用于在所需方向上施加用于偏转粒子线的磁场的机构。\n\n例如,在同步rotron的情况下,用于在称为主环或存储环的环形轨道中运行粒子束的偏转磁场,用于将轨道中的粒子线转换为主环的粒子线的会聚磁场使用用于从入射或主环切出粒子束的偏转磁场。另一方面,在回旋加速器的情况下,使用用于加速粒子线以加速螺旋的均匀静态磁场。\n\n传统上,上述磁场由用于任何同步rotron和回旋加压的电磁铁产生。\n\n粒子束加速器可以通过原理地制造磁场强度,例如收敛磁场,而在操作期间存在恒定磁场的部分。在同步的光束出口处,粒子束在主环上耗尽,或者在储存环中运行的粒子线为脉冲状磁场提供脉冲磁场,以稍微变化。颗粒线通过称为“隔膜磁体”的电磁体进一步偏转。这种隔膜磁体需要形成大而均匀的磁场,并安装在颗粒促进剂的主环附近,使得隔膜磁体来自空间(磁场产生空间),其产生强磁场使磁场尽可能小的使磁场泄漏到外部区域(例如,5 mt或更小)。\n\n在回旋加速器的情况下,如上所述,当需要形成均匀的磁场时,当质子用作加速粒子时,与电子相比,质子高,因此质子被偏转,因为重量大与电子相比。需要1.0 T或更多的强静态磁场。\n\n用于粒子射线促进剂的磁体描述于JP-A-64-72502,JP-A-8-255726,JP-A-2001-28300,​​JP-A-2003-305021中。\n\n如上所述,由于用于颗粒加速器的电磁铁是产生强磁场的,因此在操作时需要将大电流向电磁体的线圈流动。\n\n然而,当大电流流到线圈时,必须快速去除由线圈产生的热量,因此必须立即去除热量,这需要提供围绕线圈的冷却机制。\n\n此外,当使用电磁铁时,还存在构成电磁铁的每个构件由于电磁铁产生的间歇强的强磁场而容易损坏。此外,电磁铁中使用的大量磁轭主要是富架,因此通过从梁线产生的辐射照射容易激活。活化是一种现象,其中用加速颗粒线等照射的物质的一部分转化为放射性核素并具有其自身的放射性。当磁轭材料被激活时,工人难以导致电磁铁导致的电磁铁的维护。\n\n如上所述,为了避免在颗粒加速器上使用电磁铁时出现的各种问题,可以使用永磁体而不是电磁铁。例如,在美国费米研究所的粒子加速器的储存环中使用硬铁氧体磁铁。硬铁氧体不能产生强偏转磁场(例如,大约2T),因为它很小,并且不能将小的粒子加速器扩展到医院等。\n\n2-17 SMCO烧结磁铁较小由于辐射照射而脱磁,最大能量产品为240 kJ / m3它是高性能的磁铁大于因此,还可以使用基于2-17的SMCO烧结磁体来产生用于粒子加速器的强磁场。然而,它是该磁铁的主要成分,并且CO,也是必需元素的缺点,即易于获得,并且考虑维护难以采用加速器。\n\n基于ND-Fe-B的烧结磁体是320 kJ / m的最大能量乘积3展示加速器小型化的权力,因为它可以施加超过超过\n\n存在不太可能比较的优点。然而,基于ND-Fe-B的烧结磁铁具有易受辐射照射的破碎的缺点的缺点。\n\n将参考图4描述通过辐射磁化基于ND-Fe-B的烧结磁铁的机制。图。图1是基于ND-Fe-B的烧结磁体的烧结磁体的放大部分的示意图。 ○在图中,nd2Fe.14显示构成B型晶体的原子。相对较小的●●是能量eO示出了辐射(高能量颗粒),其沿着箭头飞行并与位于区域中心的原子碰撞。辐射可以是诸如质子线,中子线,α线,β线和重离子粒径的粒子束,或者可以是电磁波,例如γ射线X射线。\n\n如图1所示。如图1所示,当辐射与基于ND-Fe-B的烧结磁体中的原子中的核碰撞时,可以将碰撞原子挤出,但在许多情况下,原子不会溅起和入射能量eO被磁铁吸收为热量,并在碰撞原子周围增加格子振动。结果,区域R导致局部温度升高。辐射能量E.O受到区域吸收之前的温度L,吸收后的温度H温度升高的尺寸为Δt= tH-T.L以能量e表示O与之成比例。辐射照射后的温度TH磁铁温度T磁铁C磁铁矫顽力H如果它高于cJ区域r的允许系数pC无论区域R的大小如何,在冷却过程中磁化都是反转的。由于ND-Fe-B基烧结磁体的矫顽力表达机制是神经化型,因此当区域R导致磁反转时,含有区域R的整个一个晶粒会导致磁化反转。。这种磁化反转在烧结磁体的所有区域(谷物)上进行,因为辐射的辐射量增加,并且最终整个烧结磁体显着抵销。\n\n随着这种去磁的进行,不能产生恒定的强大的磁场,从而使用传统的ND-Fe-B基烧结磁体来制作用于粒子射线加速器的磁场发生器。它没有投入实际使用。\n\n考虑到了本发明的目的,其主要目的是提供一种用于颗粒射线促进剂的永磁体和磁场发生器,即使使用基于ND-Fe-B基磁体的辐射甚至难以磁化。它是的\n\n发明的描述\n\n本发明的粒子射线促进剂的永磁体是用于粒子射线促进剂的永磁体,用于暴露于3,000 GY的吸收剂量,R(稀土元素中的至少一种),B(硼)和TM(至少一个过渡元件)包含不可避免地包含的杂质元素,并且渗透系数为0.5或更大,并且矫顽力HcJ用于粒子束促进剂的永磁体,其烧结磁体为1.6mA / m或更高。\n\n在优选的实施方案中,烧结磁体的组成比为R:25.0至40.0重量%,B:0.8至1.2重量%,不可避免地含有的杂质元素和Tm:剩余部分。\n\n在优选的实施方案中,R是Nd和/或Pr的基本要素。\n\n在优选的实施方案中,R还包含Dy和/或Tb。\n\n在优选的实施方案中,TM包括整个磁体的1.0重量%或更少的CO。\n\n本发明的磁场发生器是在暴露于3,000 Gy或更大的吸收剂量的辐射的环境中使用的磁场发生器,以及基本上环形地布置的多个永磁体以形成永磁体的磁场产生空间涉及,不可避免地涉及,不可避免地含有r(稀土元素中的至少一个),b(硼)和Tm(至少一个过渡元件)含有杂质元素cJ是1.6 mA / m或更多的烧结磁体。\n\n在优选的实施方案中,烧结磁体的组成比为R:25.0至40.0重量%,B:0.8至1.2重量%,不可避免地含有的杂质元素和Tm:剩余部分。\n\n在优选实施例中,多个永磁体与磁场产生空间彼此面对\n\n第一磁体和第二磁体,第一磁体和第二磁体是穿过磁场产生空间的中心部分的直线,并且沿着与中央部分的磁场方向平行的直线布置。\n\n在优选实施例中,由多个永磁体构成的磁体的形状相对于包括直线的第一平面基本上对称,但第一平面的第二第二并且垂直于第一平面。平面是不对称的。\n\n在优选实施例中,磁铁矿的至少一部分外周表面被铁磁材料覆盖。\n\n在优选实施例中,多个永磁体布置在第一磁体夹在一起的位置,并且第五磁体和设置在第二磁体夹在第二磁体的位置处的第五磁体。6尺寸的第三磁体沿着方向测量垂直于第二平面小于沿垂直于第二平面的方向测量的第四磁体的尺寸。沿着垂直于第二平面的方向测量的第五磁体的尺寸小于测量的第六磁体的尺寸垂直于第二平面的方向。\n\n在优选实施例中,进一步包括用于改变形成在磁场产生空间中的磁场的强度的附加磁体,并且附加的磁体磁耦合到多个永磁体的至少一部分,可动磁路部分形成并保持使使得相对于磁场产生空间的相对位置关系可以可变地变化。\n\n在优选实施例中,可动磁体电路部分包括多个磁体作为部件,并且多个磁体可以水平移动。\n\n在优选实施例中,多个永磁体包括设置在第四磁体和第六磁体之间的第七磁体。\n\n在优选实施例中,一种机构,还包括在低于室温的温度下的永磁体的温度。\n\n在优选实施例中,提供了一种铁磁体,其中厚度根据距第二平面的距离和第二磁体的相对表面改变。\n\n在优选实施例中,多个永磁体中的每一个具有长方体的形状。\n\n本发明的粒子束加速器包括上述磁场发生器,磁场发生器和厚度为0.1mm或更大设置在辐射飞行源之间的磁场发生器的磁场发生器。\n\n[简要描述;简介]\n\n图。图1是示出暴露于辐射的磁体的晶体结构的示意图。图中的圆形表示构成磁体的原子。\n\n图。图2是示意性地示出了适当使用本发明的永磁体的粒子射线加速器的结构的视图。\n\n图。图3是示出使用永磁体的隔膜磁体的结构的示意性透视图。\n\n图。图4是表示图1所示的配置的变形例的透视图。\n\n实施本发明的最佳方式\n\n将参考附图描述本发明的优选实施例。\n\n图。图2示意性地示出了适当使用本发明的永磁体的粒子射线加速器的构造。\n\n图2的粒子射线加速器。图2是踢球磁体K和踢球磁k和主环MR上的踢磁磁k,用于加速在主环形隔膜磁体S1,S2和S3中运行的颗粒线和颗粒线偏转颗粒线与过程中分离。\n\n主环MR和踢脚磁k的配置与传统的配置相同,并且本实施例中的特征点处于隔膜磁体的构造中。因此,下面将描述隔膜磁体的细节。\n\n参考图1。图。图3示出了用于隔膜磁体S1,S2和S3的至少一个(优选所有隔膜磁体)的本实施例的磁场发生器。图3显示了XYZ坐标。该坐标的起源是光束传输线的磁化。\n\n它应在爆发空间的中心。 Z轴方向平行于施加在光束传送线中飞行的颗粒上施加的磁场的取向,并且Y轴方向平行于在光束输送线中飞行的颗粒的行进方向。如果在光束传送线中飞行的颗粒是质子的,则x轴方向平行于延伸到质子的力的取向。当颗粒是带负电荷的颗粒如电子时,图3的磁场发生器的力。如图3所示,如颗粒的形式所示,并且延伸到颗粒的力是反平行的。由于该磁场发生器需要在相对于颗粒的情况下沿远离梁线的方向施加力,因此在带负电颗粒的情况下,每个永磁体的磁化方向是反转的,并且磁场发生空间必要的,以重合磁场的方向在-Z轴向上形成。\n\n本实施例的磁场发生器位于主环中的梁线附近,并围绕光束传送线,以提供与光束线分离的光束传送线的强偏转磁场,多个永磁体基本上布置环形。\n\n构成该磁场发生器的永久磁铁都是基于Nd-Fe-B的烧结磁体,并且至少一个,r(稀土元素中的至少一个),b(硼)和tm(在过渡元件中)至少一个,含有Fe)并含有可参差的杂质元素。以优选的形式,R:25.0至40.0重量%,B:0.8至1.2重量%,Tm:余数和不可避免地含有杂质元素。此外,本实施例的磁体处于具有0.5或更大的易磁性因子的磁化状态,矫顽力HcJ是1.6 mA / m或更多。稍后描述了诸如永磁体和磁特性的组成的细节,并且这里将描述由该永磁体组成的磁路。\n\n此外,在使用上述永磁体形成磁路之后,如果暴露于高温,则可以降低磁场的均匀性。为了防止磁场均匀性降低,JP-A-2003-305021中公开的热处理(例如,40至70℃的热处理)施加到上述永磁磁铁中。\n\n本实施例的磁场发生器由具有矩形平行六边形形状的七个永磁区域组成,并且这些永磁体与竖琴型磁场电路类似,通过布置形成基本上环形的空间地形成磁路。在形成图1所示的磁路的多个永磁体中的每一个中,如图3所示,第一磁体区域A和第二磁体区域B彼此面对磁场产生空间,并且它沿其布置磁场产生空间通过中央部分的直线(Z轴)。\n\n第三磁体区域C和第四磁体区域D设置在第一磁体区域A的两侧,以便夹在第一磁体区域A,第五磁体区域E和第六磁体区域F是第二磁体区域。它布置在第二磁体区域B的两侧,以便三明治B.此外,第七磁体区域G设置在第四磁体区域D和第六磁区F之间。\n\n第一磁体区域A和第二磁体区域B的磁化方向与形成在磁场产生空间的中心部分处的磁场的方向重合,并面对Z轴方向。另一方面,第三磁体区域C和第六磁体区域F的磁化方向在X轴方向上取向,第四磁体区域D和第五磁体区域E的磁化方向面向-X轴向。第七磁体区域G的磁化方向处于-Z轴向方向,并且是与第一磁体区域A和第二磁体区域B的磁化方向的抗平行关系。\n\n因此,七个永磁区域A至g以基本环形的形状布置,以在中心部分形成磁场产生空间,但是没有形成全环形结构,并且梁线和梁变压器没有永磁体的部分存在于端口线之间。因此,图3中所示的磁体(磁路)具有“Halbach型”结构,而不是“C形型”的结构,而不是“C形”的结构。\n\n实际上,包括通过磁场产生空间的中心的上述直线(z轴)的第一平面(xz平面),以及垂直于第一平面的第二平面(yz表面)。当考虑时,形状由七个永磁区域A至G构成的磁体(陶瓷电路)相对于第一平面(XZ平面)基本对称,但是对于第二平面(YZ表面)而言,它是不对称的。也就是说,第三磁体区域C和沿垂直于YZ平面的方向(X轴方向)测量的第三磁体区域E\n\n尺寸(x方向尺寸)设计为小于第四磁体区域D和第六磁体区域F的X方向尺寸。\n\n采用这种左右不对称结构的原因是即使在光束线和光束传送线之间的距离小时,也能产生强大的磁场。图2中所示的隔膜磁体S1被置于最靠近主环MR的位置,但是如果采用传统的HALBACH型瓷器电路,则难以将其放在这样的位置。另一方面,根据本实施例的配置,具有图3所示的配置的磁场发生器。图3可用于隔膜磁体S1。每个磁体区域可以是更紧凑的磁体。\n\n为了改变磁场产生空间的磁场强度,可以添加另一个永磁体以形成如图2所示的可动磁路部分。图2中所示的可动磁路部分包括:图4所示的第八磁体区域H,第九磁体区域I,第十磁体区域J和第十磁体区域K.第八磁体区域H和第九磁体区域I以与第一磁体区域A和第四磁体区域D相同的方向磁化。另一方面,第10磁体区域j和第十一磁体区域k各自。第二磁体区域B和第六磁体区域F沿相同方向磁化。\n\n保持第八磁体区域H,第九磁体区域I,第十磁体区域j和第十级磁体区域k以便水平移动。如果这些磁体沿图2中的左方向逐渐移动。如图4所示,第八磁体区域H和第九磁体区域I分别最终,第一磁体区域A和第四磁体区域D.第十磁体区域J和第十一磁体区域K分别位于第十磁体区域J和第十磁场k上方。图3中所示的磁场发生器如图4所示,在图3的磁场发生器中的第一磁体区域A和第四磁体区域D中为2分钟。图3和第二磁体区域B和第六磁体区域F。它将具有类似的配置。\n\n第八磁体区域H,第九磁体区域I,第十磁体区域J和第十级磁体区域k水平移动以调节这些磁体区域的位置,形成磁场产生空间。可以任意改变磁场的强度在预定范围内改变,而不会显着扰乱磁场分布。\n\n此外,尽管未在图4中示出。在图4中,为了减少泄漏磁场或促进组装,铁,铁,镍合金,铁,钴合金等。可以设置高饱和磁通密度材料的构件。\n\n形成这种可动磁场电路部分和磁体的数量所需的磁体的配置和数量不限于图2所示的那些。\n\n注意,已知的线性引导件,螺钉,轴承电机等可用于移动磁体H,I,J,K的机构。此外,已知的传感器和磁尺度可用于定位。\n\n在光束线和光束传输线的分叉点中,特别可能是通过粒子束辐射发生的。因此,从活化构件到隔膜磁体的粒子束辐射成为问题。在本实施例中,如稍后所述,采用烧结磁体,其几乎通过辐射照射除去,但仍然优选尽可能地减少粒子束的照射量。因此,当屏蔽板设置在磁体的表面和辐射源的表面之间时,可以降低磁体的曝光量是优选的。如果屏蔽板的厚度小于0.1mm,则屏蔽板的厚度优选为0.1mm或更高,因为曝光量无效。作为屏蔽板的材料,例如,具有用于热中子的大散射横截面积的硼同位素10优选使用含有大量B和普通硼的硼不锈钢材料等。\n\n此外,优选将磁体的温度保持在低于室温的温度。当提供用于冷却磁体的机构时,与磁体温度基本上等于室温的情况相比,改善了矫顽力。而且,温度T对图1所示的区域R的温度升高。H由于曝光时的退磁减小,因此优选的是,因为它变低。\n\n作为用于冷却磁体的装置,可以使用诸如液氮,液氦,固体二氧化碳等的制冷剂,并且可以使用使用循环制冷剂或珀耳帖元件的制冷系统。磁铁\n\n在冷却的情况下,如果包括R代替包括ND,则优选防止在基于Nd基磁体中的低温下伴随旋转重新排列现象的残余磁通密度的降低。另外,为了防止磁体材料的放射性,优选使TM不含CO。由于CO不是R-TM-B烧结磁体中的基本元件,因此可以非常容易地实现不含有CO的磁体组合物。\n\n本发明的磁体组合物含有25.0至40.0质量%的R(稀土元素中的至少一个)和0.8至1.2重量%B(硼),并且平衡为Tm(至少在过渡元件中)它是一种含Fe的类型。然而,它可能包含不可避免地包含的杂质元素。如果R小于25.0质量%,则胁迫降低,当R超过40.0质量%时,剩余磁通密度降低。 R的优选范围为29.0至32.0质量%。更优选的是,因为r还是Nd和/或Tb含有Tb。磁铁组合物的Dy和/或Tb的比例优选为2.5质量%以上。如果B(硼)小于0.8质量%,则矫顽力降低,如果超过1.2质量%,则剩余磁通密度降低。如果在没有TM的情况下降低残留的磁通密度,则剩余磁通密度降低,因此TM始终含有Fe。 TM中的Fe含量优选为50质量%以上。\n\n本实施例中的R-TM-B基烧结磁体通过在真空气氛中进行例如粉碎原料合金,磁场,烧结,热处理,加工,表面涂层等来制造。 。以这种方式产生的R-TM-B基烧结磁体的密度为7.5g / cm3如上所述,晶粒尺寸优选为1至20微米。更优选的晶粒尺寸范围为5至10μm。\n\n本实施方案中的基于R-TM-B基烧结磁体是磁化状态,其助剂系数为0.5或更大,并且当吸收剂量3,000 Gy或更多辐射暴露于超过3,000 Gy的辐射时,降低表面磁通密度的速率为5.该组合物已被调节,以小于%。当表面磁通密度的降低率为5%以上时,不优选,因为它缺乏磁路稳定性。此外,由于具有小于0.5的透气系数的形状的磁体增加了磁体内部产生的磁场,所以即使在暴露于相同条件时,表面磁通密度的减小速度趋于较大。因此,在本发明中,渗透系数限制为0.5或更大。\n\n在本说明书中,磁体的吸收剂量表示由磁铁吸收的剂量的总和,无论暴露时间如何。 3,000 Gy的吸收剂量是指磁铁每kg吸收3,000 j辐射能量的剂量。\n\n当1千克磁体吸收3,000J的辐射能量,并且当其能量转换为热时估计磁体的温度升高时,磁体的比热量为0.5JK。-1G-1随着整个磁铁的温度升高为6K。 6K的温度升高不是尺寸,使得热退磁是一个主要问题。然而,在传统的磁体中,如上所述,由于局部温度升高而发生磁化反转,并且发生表面磁通密度的降低。\n\n【例子】\n\n例1\n\n首先,如表1所示,制备含Nd,Dy,B,Fe和不可避免的元素的组合物的基于R-Tm-B的原料粉末。粉末的平均粒径为3.0μm。在磁场中模塑该粉末后,真空在1060℃下在1060℃下进行烧结以制备烧结磁体材料。表2显示了从烧结磁体材料收集的试验片的磁化后的磁性(室温)。此外,表2描述了每个烧结磁体材料的居里点(Tc)。\n\n\n\n\n\n接下来,机械加工所获得的烧结磁体材料,并且具有10mm的磁化方向的矩形平行六面体形状的磁体加工产品是34mm平方体。接下来,将这些磁铁加工产物中的两种用于表1中所示的每个组合物磁化。\n\n此后,杆件被吸附了一个磁体的N极和具有相同组成和另一个磁体的S杆的另一个磁体的每个磁体。每个霍尔件由1毫米厚,34毫米长的铁板制成。此外,两个极块被用带有间隔物的间隔物吸附并完成了一对磁体样品。间隔物由1.65mm和34mm长丙烯酸板的厚度制备,并且设有宽度为5mm的部分间隔物。高斯仪表的孔元件从该缺失部分插入,使得可以测量间隙之间的中心的磁通量。以这种方式生产的磁共振系数PC(B /μμ)磁体样品OH)的平均值为1.2。\n\n将磁体样品放置在放置在质子同步加速器的梁提取端口中的隔膜电磁铁附近。磁体样品和梁线之间的距离设定为85cm。\n\n接下来,当加速质子与光束线的管道碰撞时产生的磁体样品暴露。通过通过磁体样品放置的铝样品的活化程度测量磁体样品的吸收剂量。当磁体样品的吸收剂量达到3,500Gy时,测量磁体样品的中心通量。表3显示了通过在暴露前的测量值比较之前和之后获得表面磁通量的降低率获得的结果。\n\n\n\n比较例1\n\n在与实施例1中的相同的制造条件下制造具有表1中所示的组合物的烧结磁体,并获得具有表2中所示的磁性的烧结磁体材料。对于所得磁体材料,进行与实施例1中相同的加工和曝光测试。表3显示了当磁铁的吸收剂量达到3,500Gy时,磁体样品(比较例1)的中央通量的缩小率。\n\n从表3到1到3,即使当辐射暴露于辐射之前,直到它到达3,500 Gy的吸收剂量,可以看出,表面磁通量的还原率可以抑制到5%或较少的。表面磁通量的这种减少率实际上是独特的水平。另一方面,在比较例1至2中,表面磁通量的还原率超过5%。\n\n如表2所示,实施例与比较例之间的居里点几乎没有差异。根据参考图1描述的想法。1,如果居里点处于同一水平,则应认为通过辐射照射的退磁能够尽可能多地进入矫顽力,但实际上迫使矫顽力越高少获得磁性结果。\n\n例2.\n\n首先,制备由Nd,Dy,B,Fe和不可避免的含有元素组成的组合物,其平均粒径为3.0μm。将粉末成型在磁场中,然后真空烧结在1060℃和4小时。因此,组合物的烧结磁体材料由2.5质量%的12.5质量%,和By25质量%的Dy和B,1.0质量%和1.0质量%的B,以及剩余部分。是fe。使用这些烧结磁体材料的磁性组后室温下的磁性是1.33T,HCJ 1.3 mA / M,(BH)max342 kj / m3见面。\n\n接下来,机械地处理上述烧结磁体材料以产生长方形晶体磁体并磁化。具有图2所示的配置的磁场发生器。在磁化之后使用矩形磁体组装3。另外,由于难以配置图2中所示的每个单独的磁体区域。3具有一个磁体材料,图3的磁场发生器通过相互粘附大量的小磁体材料块来组装图3所示的磁场发生器。\n\n在这种磁场发生器中,相对的铁垫片之间产生的磁场是1.10t。本实施例中的每一个铁垫片在面对面侧具有倾斜部分。该倾斜部分的存在沿图2的X轴改变相对的铁垫的间隔。通过适当地设计铁垫的形状,可以提高所产生的磁场的均匀性。图3中磁场强度的X轴方向的均匀性。在基本上位于装置中心的磁场产生空间中的磁场产生的±3%,并且左侧位置处的漏磁场磁场发生器是1.4 mt。满足。\n\n当制造的磁场发生器掺入实际粒子加速器中作为隔膜磁体时,如图2所示,将从踢磁场生成单元的中心分支的光束输送支线的不锈钢管插入。主环Beamla在铁板磁屏的左侧\n\n可以布置磁场发生器,使得INN不锈钢管通过。此时,光束传输的不锈钢管可以使加速颗粒与1.0tt或更大的强磁场偏转。\n\n在该实施例中,由于主环梁线的泄漏磁场到不锈钢管很小,因此不可能施加不希望的偏转。另外,由于磁体中的CO 2很少,因此预期从伴随磁场发生器使用SM-Co-Co-Co-Conted磁体的磁场发生器产生的辐射是小的,并且磁场发生器可以减少维护时工人的曝光量。\n\n从实施例1的结果,当使用1.6mA / m或更高的磁体组装实施例2中所示的磁场发生器时,在组装磁场发生器时,在加速器的操作期间产生构成磁场发生器的磁体使用1.6 mA / m或更高的磁体。即使由中子暴露,也可以减少多米达尔\n\n以这种方式,可以产生稳定且均匀的静磁场,而不循环电力消耗和冷却水,即使在加速器操作期间产生的辐射曝光,产生的磁场也没有降低,并且可以看出,传统的电磁铁可以看出,可以提供具有与配方的隔膜磁体具有相同功能的ND-Fe-B永磁型隔膜磁体。\n\n【工业可用性】\n\n根据本发明,可以提供用于粒子射线换档器的永磁体和磁场发生器,其在使用ND-Fe-B磁体时不容易地通过辐射释放。根据本发明,可以产生颗粒加速器应用所需的强磁场,而不会像电磁铁一样消耗大量功率。');
INSERT INTO `os_patent_instruction_text` VALUES (13015, 22844, '【技術分野】\n\n【0001】\n\n本発明は、R-T-B系焼結磁石およびその製造方法に関する。\n\n【背景技術】\n\n【0002】\n\n高性能永久磁石として代表的なR-T-B系永久磁石は、優れた磁気特性を有することから、各種モータ、アクチュエータなど様々な用途に使用されている。しかし、電気、電子機器の小型化·軽量化さらには高機能化のため、さらなる磁気特性の向上、耐食性の向上、コストダウンなどが要求されている。\n\n【0003】\n\nR-T-B系永久磁石において、残留磁束密度を決定する因子は、主相の存在比率とその配向度である。主相存在比を高めるためには、組成をR2T14B化合物の化学量論比に近づければよいが、特にBを減少させることは現実には困難である。生産上、Bが化学量論比を下回ると、保磁力を担う粒界相に軟磁性のR2Fe17相が析出し、保磁力が大幅に低下してしまう。このため、B濃度は化学量論比よりも僅かに高い値をタッゲート値に設定する必要がある。\n\n【0004】\n\nこのため、従来は、どうしても粒界にBリッチ相(Nd1.1Fe4B4)の析出した組織が形成されてしまう。Bリッチ相は、磁石特性には何ら関与せず、その比率が大きくなると、残留磁束密度Brが低下してしまうとになる。また、微量のBを検知することは困難であり、分析精度の誤差はB含有量に対してプラスマイナス2%程度になる。このため、化学量論比よりも過剰なBを添加せざるを得ず、B濃度低減によって磁石特性を更に向上させることはできなかった。\n\n【0005】\n\n一方、R-T-B系永久磁石に種々の元素を添加して磁気特性の向上を図る提案が数多くなされている。それらの添加元素のうち、Gaは、R-T-B系焼結磁石や、R-T-B系ボンド磁石、特にHDDR法による異方性ボンド磁石に添加されている。Ga添加の目的は、焼結磁石では保磁力向上にあり、ボンド磁石では、再結晶工程における保磁力向上および異方性保持にある。\n\n【0006】\n\n特許文献1は、R-T-B系焼結磁石へ0.2〜13質量%のGaを添加することによって高い保磁力が得られることを開示している。特許文献2は、0.087〜14.4質量%のGaとともにNb、W、V、Ta、Moのうち少なくとも1種を添加することによって高い保磁力が得られることを開示している。これらの文献に開示されている従来技術は、比較的多量のGaを添加することによって保磁力を向上させることを目的としている\n\n。\n\n【0007】\n\n特許文献3は、R(Fe1-x-y-z-uCoxByGazMu)A組成において、0【0008】\n\n特許文献4は、O(酸素)濃度が0.3〜0.7質量%の範囲において、0.01〜0.5質量%のGaを添加することを開示しているが、実施例におけるGa添加量は0.09質量%以上である。特許文献5は、O(酸素)濃度が0.25質量%以下において、0.01〜0.5質量%のGaを添加することを開示しているが、実施例におけるGa添加量は0.08質量%以上であり、このときのB濃度は1.05質量%である。\n\n【0009】\n\n特許文献6および特許文献7は、濃度0.9〜1.3質量%のBと濃度0.02〜0.5質量%のGaを同時に添加することが開示されているが、Vの添加が必須であり、また、B濃度が1.0質量%未満の実施例は記載されていない。\n\n【0010】\n\n特許文献8は、7at%以下の種々添加元素が記載され、その中にGaも含まれているが、磁石構成相にNdリッチ相と共にBリッチ相を必須とする。\n\n【0011】\n\n特許文献9は、0.05〜1質量%のGaを添加することを開示しているが、Nbを必須元素として含有させている。\n\n【0012】\n\n特許文献10は、いわゆるHDDR法を用いて焼結磁石を製造する方法を開示している。0〜4at%のGa添加が開示されている。しかし、水素化反応を用いるHDDR処理におけるGaの働きは、焼結磁石では発現しない。\n\n【0013】\n\n特許文献11は、異なる2種の組成の合金原料を混合して用いる2合金法に関する発明が開示している。両方の合金または一方の合金には0.01〜0.5質量%のGaとAlとを複合添加することが記載されているが、0.1質量%のGaを添加する実施例しか開示されていない。\n\n【特許文献1】特許第2577373号公報\n\n【特許文献2】特許第2751109号公報\n\n【特許文献3】特許第3255593号公報\n\n【特許文献4】特許第3255344号公報\n\n【特許文献5】特許第2966342号公報\n\n【特許文献6】特許第3298221号公報\n\n【特許文献7】特許第3298219号公報\n\n【特許文献8】特許第3296507号公報\n\n【特許文献9】特許第3080275号公報\n\n【特許文献10】特許第2904571号公報\n\n【特許文献11】特開2002-38245号公報\n\n【発明の開示】\n\n【発明が解決しようとする課題】\n\n【0014】\n\n上記の従来技術では、何れの場合も、比較的量の多いGaを添加するか、あるいは、Gaと他の添加元素とを複合添加することによって保磁力を向上させている。しかし、B濃度を減少させて主相の存在比率を高めることにより、残留磁束密度Brを向上させることについては、教示も示唆もされていない。\n\n【0015】\n\n本発明はかかる諸点に鑑みてなされたものであり、本発明の目的は、B-rich相(R1.1Fe4B4)の存在比率を低減し、主相の存在比率を高めることより、残留磁束密度Brを向上させたR-T-B系焼結磁石を提供することにある。\n\n【課題を解決するための手段】\n\n【0016】\n\n本発明のR-T-B系焼結磁石は、R:27.0質量%以上32.0質量%以下(Rは、Nd、Pr、Dy、Tbのうち少なくとも1種であり、NdまたはPrのいずれかが必ず含まれる)、T:63.0質量%以上72.5質量%以下(Tは、Feを必ず含み、Tの50%以下をCoで置換できる)、Ga:0.01質量%以上0.08質量%以下、およびB:0.85質量%以上0.98質量%以下の組成を有している。\n\n【0017】\n\n好ましい実施形態においては、M:2.0質量%以下(Mは、Al、Si、Ti、V、Cr、Mn、Ni、Cu、Zn、Zr、Nb、Mo、In、Sn、Hf、Ta、Wからなる群から選択された少なくとも1種)を含有する。\n\n【0018】\n\n好ましい実施形態においては、正方晶R2T14B型結晶構造を有する主相が磁石体積の90%以上を占め、かつR1.1Fe4B4相を実質的に含まない。\n\n【0019】\n\n好ましい実施形態において、酸素濃度は0.5質量%以下であり、窒素濃度は0.2質量%以下であり、水素濃度は0.01質量%以下である。\n\n【0020】\n\n本発明のR-T-B系焼結磁石の製造方法は、R:27.0質量%以上32.0質量%以下(Rは、Nd、Pr、Dy、Tbのうち少なくとも1種であり、NdまたはPrのいずれかが必ず含まれる)、T:63.0質量%以上72.5質量%以下(Tは、Feを必ず含み、Tの50%以下をCoで置換できる)、Ga:0.01質量%以上0.08質量%以下、およびB:0.85質量%以上0.98質量%以下の組成を有する合金の粉末を用意する工程と、前記合金の粉末を成形し、焼結して焼結磁石を作製する工程と、前記焼結磁石に対して、400℃〜600℃の熱処理を施す工程とを含む。\n\n【0021】\n\n好ましい実施形態において、前記合金の粉末を用意する工程は、前記合金の溶湯を用意する工程と、前記合金の溶湯をストリップキャスト法によって急冷し、凝固させることによって急冷合金を作製する工程と、前記急冷合金を粉砕する工程とを含む。\n\n【発明の効果】\n\n【0022】\n\n本発明によれば、B濃度を低減しても、軟磁性相の生成を抑制しながら、実質的にB-rich相(R1.1Fe4B4)を含まない高保磁力の焼結磁石を提供することができる。Bは、PRTR法管理物質に指定されているため、Bの使用を削減できること自体がすぐれた効果をもたらす。\n\n【0023】\n\nまた、本発明の組成によれば、熱処理後、B濃度に対する保磁力の変化(低下)が殆ど生じないため、B濃度に関する管理基準を緩和することができ、再現性良く高品質の焼結磁石を提供することが可能となる。\n\n【0024】\n\n本発明で使用するGaは高価な金属であるが、本発明によれば、従来に比べて極微量の添加で上記効果を得ることができるため、コストアップを生ずることがない。なお、B-rich相の消滅によって、必要なR量の削減も図れるため、それよってもコストダウンが可能である。更に、前述したように、B-rich相の消滅およびR量の削減によって耐食性が向上するという利点が得られる。\n\n【発明を実施するための最良の形態】\n\n【0025】\n\n本発明者は、0.01質量%以上0.08質量%以下という極微量のGaを添加することにより、B濃度を0.85質量%以上0.98質量%以下の範囲内の従来よりも低い値に設定して粒界相におけるBリッチ相(Nd1.1Fe4B4)の生成を抑制しながら、軟磁性R2Fe17相の生成をも抑制できることを見いだして、本発明を想到するに至った。\n\n【0026】\n\n本発明では、Gaの微量添加により、粒界相におけるBリッチ相および軟磁性R2Fe17相の生成が抑制される結果、B濃度が比較的低い場合でも、保磁力の低下を招かずに優れた磁石特性を発現させることが可能になる。このようなGaの微量添加によって得られる効果は、従来は全く知られていなかったものである。前述した先行技術文献に開示されているGaの添加は、B濃度が1.0質量%を超える範囲で保磁力を増大させることなどを目的して行われているが、B濃度が0.98質量%以下において生じていた保磁力低下を抑制する働きがGaの微量添加によってもたらされることは、本願発明者によって初めて明らかになったことである。\n\n【0027】\n\n本発明によれば、B濃度を低く設定しても、保磁力が変動しにくく、Bの過剰添加が必要なくなるため、主相の存在比率が増加し、残留磁束密度Brを向上する。Bリッチ相の存在は、耐食性に悪い影響を示すことが知られているが、本発明の焼結磁石にはBリッチ相が実質的に存在しないため、耐食性が向上する。\n\n【0028】\n\nまた、本発明では、Bの過剰添加に伴なう余分なRの添加も必要なくなるため、貴重な希土類元素Rの無駄な消費を避けることが可能となる。更に、反応性に富んだ希土類元素Rの濃度が低下すると、それによって焼結磁石の耐食性が更に向上するという利点もある。\n\n【0029】\n\nなお、本発明では、従来のGa添加と比べて低い濃度のGaしか添加しないため、高価なGaの使用量を低下させつつ、磁石特性向上効果を充分に得ることができる。\n\n【0030】\n\n軟磁性相の生成がGaの微量添加によって抑制される詳細なメカニズムは明らかになっていないが、後に詳細に説明する実験結果から、焼結後の熱処理が重要な役割を果たしていると考えられる。\n\n【0031】\n\n以下、本発明によるR-T-B系焼結磁石の好ましい実施形態を説明する。\n\n【0032】\n\nまず、R:27.0質量%以上32.0質量%以下(Rは、Nd、Pr、Dy、Tbのうち少なくとも1種であり、NdまたはPrのいずれかが必ず含まれる)、T:63.0質量%以上72.5質量%以下(Tは、Feを必ず含み、Tの50%以下をCoで置換できる)、Ga:0.01質量%以上0.08質量%以下、およびB:0.85質量%以上0.98質量%以下の組成を有する合金を作製する。具体的には、上記組成となるように原材料を溶解し、冷却·凝固して合金を作製する。\n\n【0033】\n\n上記合金の製造は、公知の一般的な方法を採用して行うことができる。各種の合金製造方法の中でも、ストリップキャスティング法がさらに効果的に用いられる。ストリップキャスティング法によれば、例えば板厚0.1mm〜5mm程度の鋳片を得ることができる。得られた鋳片は、Rリッチ相が微細に分散し、主相であるR2T14B相の短軸寸法が0.1〜50μm、長軸寸法が5μm〜板厚程度の極微細な柱状組織を有している。このような柱状組織の存在により、高磁気特性を得ることができる。ストリップキャスティング法の代わりに、遠心鋳造法を採用しても良い。また、溶解·合金化の工程に代えて、直接還元拡散法を用いて上記組成の合金を作製しても良い。\n\n【0034】\n\n得られた合金を、公知の方法によって平均粒径1〜10μmに粉砕される。このような\n\n合金の粉末は、粗粉砕工程と微粉砕工程の2種類の粉砕を行うことによって好適に作製され得る。粗粉砕は、水素吸蔵粉砕法や、ディスクミルなどを用いた機械的粉砕法によって行うことができる。また、微粉砕は、ジェットミル粉砕法、ボールミル、アトライターなどの機械的粉砕法によって行うことができる。\n\n【0035】\n\n上記の粉砕によって得られた微粉砕粉は、公知の成形技術を用いて様々な形状に成形される。成形は、磁場中圧縮成形法を用いて行うことが一般的であるが、パルス配向した後静水圧成形やゴムモールド内で成形する方法を用いて行っても良い。\n\n【0036】\n\n成形時の給粉の能率、成形密度の均一化、成形時の離型性などを向上させるために、脂肪酸エステルなどの液状潤滑剤やステアリン酸亜鉛などの固状潤滑剤を微粉砕前の粉末および/または微粉砕後の粉末に添加することが好ましい。添加量は、粉末100重量部に対して、0.01重量部〜5重量部が好ましい。\n\n【0037】\n\n成形後の成形体は、公知の方法によって焼結することができる。焼結温度は1000℃〜1180℃、焼結時間は1〜6時間程度が好ましい。焼結後の焼結体には、所定の熱処理を施す。この熱処理によって、この発明によるGaの微量添加効果、Bの削減効果がより一層顕著となる。熱処理条件は、温度400℃〜600℃、時間1〜8時間程度である。\n\n【0038】\n\n[組成限定理由]\n\nRは希土類焼結磁石の必須元素であって、Nd、Pr、Dy、Tbのうち少なくとも1種から選択され得る。ただし、Rは、NdまたはPrのいずれか一方を必ず含むことが望ましい。更に好ましくは、Nd-Dy、Nd-Tb、Nd-Pr-Dy、またはNd-Pr-Tbで示される希土類元素の組合わせを用いる。\n\n【0039】\n\n希土類元素のうち、DyやTbは、特に保磁力の向上に効果を発揮する。上記元素以外に少量のCeやLaなど他の希土類元素を含有してもよく、ミッシュメタルやジジムを用いることもできる。また、Rは純元素でなくてもよく、工業上入手可能な範囲で、製造上不可避な不純物を含有するものでも差し支えない。含有量は、27.0質量%未満では高磁気特性、特に高保磁力が得られず、32.0質量%を超えると残留磁束密度が低下するため、27.0質量%以上32.0質量%以下とする。\n\n【0040】\n\nTは、Feを必ず含み、その50%以下をCoで置換することができる。また、FeやCo以外の少量の遷移金属元素を含有することができる。Coは温度特性の向上、耐食性の向上に有効であり、通常は、10質量%以下のCoおよび残部Feの組合わせで用いる。含有量は、63.0質量%未満では残留磁束密度が低下し、72.5質量%を超えると保磁力の低下を来たすので、63.0質量%以上72.5質量%以下とする。\n\n【0041】\n\nGaは本発明の必須元素である。従来、Gaは主として保磁力向上を目的として比較的多量に(0.08質量%以上)添加されていたが、本発明では、Gaの微量添加によってBを化学量論比に極めて近い領域まで低減しても、保磁力の低下が起こらないという今まで予測されていなかった効果を発揮させている。\n\n【0042】\n\n本発明では、Gaの含有量を0.01質量%以上0.08質量%以下に設定している。0.01質量%未満では上記の特徴を得ることができず、また、分析による管理が困難となる。0.08質量%を超えると、後述するように、残留磁束密度Brの低下を招いてしまうため好ましくない。\n\n【0043】\n\n本発明におけるGaは、単独の添加、すなわち、他の添加元素との複合添加なしでその\n\n効果を発揮することができる。但し、他の目的、例えば、さらなる保磁力向上を目的として後述するM元素などを添加することは差し支えない。\n\n【0044】\n\nBは必須元素であって、上記の通り、その含有量は、Gaが含有されることによって、化学量論比に極めて近い0.85質量%以上0.98質量%以下にすることができる。\n\n【0045】\n\nBが0.85質量%未満では軟磁性のR2Fe17相が析出し、保磁力が大幅に低下し、0.98質量%を超えるとB-rich相が増加し高い残留磁束密度を得ることができない。従って、本発明では、B濃度を0.85質量%以上0.98質量%以下の範囲内に設定する。特に好ましい範囲は0.90質量%以上0.96質量%以下である。このように、本発明によれば、B濃度を低減しているため、焼結磁石の構成相から実質的にB-rich相(R1.1Fe4B4)を無くし、主相の体積比率を高めることができる。その結果、保磁力の低下を招くことなく、焼結磁石の残留磁束密度を向上させることができる。\n\n【0046】\n\nなお、Bの一部はCで置換できる。このような置換を行なうと、磁石の耐食性を高めることが知られている。本発明の磁石においても、BをCで置換することは可能ではあるが、C置換は保磁力の低下を伴うため、好ましくない。通常の焼結磁石の製造方法で磁石に含まれるCは、主相中のBを置換せず、結晶粒界に希土類炭化物などの不純物として存在し、磁気特性を低下させる。\n\n【0047】\n\nM元素は、保磁力向上のために添加することができる。M元素は、Al、Si、Ti、V、Cr、Mn、Ni、Cu、Zn、Zr、Nb、Mo、In、Sn、Hf、Ta、Wのうち少なくとも1種である。添加量は2.0質量%以下が好ましい。2.0質量%を超えると残留磁束密度が低下するためである。\n\n【0048】\n\n本発明では、上記元素以外に不可避的不純物を許容することができる。例えば、Feから混入するMn、Crや、Fe-B(フェロボロン)から混入するAl、Si、Cuなどである。\n\n【0049】\n\n上述した組成の合金を、前述した粉末冶金的手段を用いて焼結磁石を製造することにより、得られた焼結磁石における構成相は、正方晶R2T14B型結晶構造を有する主相が磁石体積の90%以上を占め、かつR1.1Fe4B4相を実質的に含まない構成相となる。\n\n【0050】\n\nまた、得られた焼結磁石においては、酸素:0.5質量%以下、窒素:0.2質量%以下、水素:0.01質量%以下であることが好ましい。このように酸素、窒素、および水素濃度の上限を制限することにより、主相比率を高めることができ、残留磁束密度Brを高めることができる。\n\n【実施例】\n\n【0051】\n\n(実施例1)\n\nNd31.0質量%、Co1.0質量%、Ga0.02質量%、B0.93〜1.02質量%、Al0.2質量%、Cu0.1質量%、残部Feからなる組成の各元素を溶解し、ストリップキャスト法により、凝固させた。こうして得られたB量が異なるそれぞれの合金に対して、水素加圧による水素脆化法にて脆化後、真空中600℃(873K)で1時間保持し、冷却して原料粗粉を得た。この原料粗粉を、気流式粉砕器(日本ニューマチック製PJM)を用いて、窒素ガス雰囲気で微粉砕した。何れの試料も、得られた微粉末の粒度はFSSSの測定で3.0±0.1μmであった。\n\n【0052】\n\nこの微粉末を、0.8MA/mの磁界中、196MPaの圧力で成型した。成形体のサイズは、15mm×20mm×20mmであった。成型に際し、潤滑剤やバインダーは一\n\n切使用せず、また、磁界印可方向と加圧方向が直交する、直角磁界成型機を用いた。\n\n【0053】\n\nこの成型体を、真空焼結炉を用い、800℃(1073K)にて1時間保持した後、1040℃(1313K)にて2時間保持し、焼結した。この時の炉内雰囲気は、アルゴンガス(Ar)を導入しつつ真空排気する方法でAr分圧を300Paに保持した。冷却は、炉内をArガスにて大気圧まで復圧し、Arを流気しつつ放冷する方法で行った。\n\n【0054】\n\n得られた焼結体を機械加工後、BHトレーサにて磁石特性を評価した後、Ar雰囲気中で500℃(773K)、1時間の熱処理を行い、再度機械加工し、BHトレーサにて磁石特性を評価した。\n\n【0055】\n\n磁石特性を評価した後、各試料を350℃(623K)にて1時間の熱処理を行って熱消磁した後、窒素雰囲気にて鋼製乳鉢で粉砕して分析試料とし、ICPによる成分分析、ガス分析装置による炭素、窒素、酸素分析、TDSによる水素分析を行った。以下のデータに示す組成は、全て焼結磁石そのものの分析値である。密度は、アルキメデス法による測定である。\n\n【0056】\n\n得られた焼結体の残留磁束密度(Br)、保磁力(Hcj)、焼結密度を図1に示す。また、前記焼結体に500℃で1時間の熱処理を施した後の磁気特性を同様に図1に示す。図1は、磁石特性のB濃度依存性を示すグラフである。グラフでは、0.02質量%のGaを添加した実施例、およびGaを添加していない比較例の各々についてのデータが示されている。図中の○プロットは、熱処理なし(焼結上がり:as-sintered)の場合の測定結果を示し、●プロットが熱処理有り(heat  treated)の場合の測定結果を示している。\n\n【0057】\n\nR量(Nd)一定の場合、B濃度の減少とともにBrは向上するが、本実施例(○:熱処理なし、●:熱処理後)では、B濃度が低い領域でも、特に熱処理後において保磁力の低下は認められない。特に、B濃度が0.98質量%以下の場合、熱処理を加えることによって保磁力が大きく改善することがわかる。\n\n【0058】\n\n一方、比較例(△:熱処理なし、▲:熱処理後)では、B濃度が0.98質量%以下になると、保磁力が急激に低下している。この保磁力の低下は、熱処理によっても改善されない。\n\n【0059】\n\nなお、いずれの試料についても、酸素:0.36-0.40質量%、窒素:0.004-0.015質量%、炭素:0.04-0.05質量%、水素:0.002質量%以下であった。\n\n【0060】\n\n(実施例2)\n\n図2は、R量を31質量%、B量を0.94質量%に固定し、Ga量を変化させた場合の磁石特性と密度を示すグラフである。B濃度(0.94質量%)は、図1のグラフからわかるように、Ga添加効果が顕著に認められる組成範囲内に設定している。\n\n【0061】\n\n本実施例における試料作製方法は、実施例1における試料作製方法と同じである。図2のグラフにおいて、○で示す熱処理なしの磁石特性によれば、Ga添加によって保磁力HcJが向上することがわかる。また、●で示す熱処理後(heat  treated)の磁石特性によれば、極微量(0.01質量%)のGa添加でも、より効率的に保磁力HcJが向上することがわかる。\n\n【0062】\n\n一方、残留磁束密度Brは、Ga濃度が0.04質量%付近でピークを示す。特にGa\n\n濃度が0.08質量%を超えると、残留磁束密度Brは、焼結体の密度が向上するにもかかわらず、Ga添加なしの場合のおける残留磁束密度Brよりも低下してしまうことがわかる。\n\n【0063】\n\n以上のことから、本発明のようにB濃度が低く設定される場合は、Ga濃度を0.08質量%以下に設定する必要があることがわかる。従来のようにGa濃度が0.08質量%を超えると、残留磁束密度Brの低下が生じるため好ましくない。\n\n【0064】\n\nなお、本データのサンプルは、何れも酸素:0.38-0.44質量%、窒素:0.004-0.012質量%、炭素:0.03-0.05質量%、水素:0.002質量%以下であった。\n\n【0065】\n\n(実施例3)\n\n実施例1で用いた試料につき、熱消磁後の磁石を機械的に加工、研磨し、金属組織を観察した。図3は、31Nd-bal.Fe-1Co-0.2Al-0.1Cu-0.02Ga-0.93Bの焼結磁石の金属組織を示す。図3における左の写真は反射電子線像を示し、右の写真はBの特性X線像を示している。この組成では、Bの集積点が認められず、実質的にB-rich相がないことがわかる。\n\n【0066】\n\n(比較例)\n\n実施例1で用いた試料につき、熱消磁後の磁石を機械的に加工、研磨し、金属組織を観察した。図4は、31Nd-bal.Fe-1Co-0.2Al-0.1Cu-0.02Ga-1.01Bの焼結磁石の金属組織を示す。図4における左の写真は、反射電子線像を示し、右の写真は、Bの特性X線像を示している。図4からわかるように、Bの集積点が観察される。すなわち、Bが過剰の組成では、Gaを添加しても、B-rich相が生成される。\n\n【0067】\n\n図5は、31Nd-bal.Fe-1Co-0.2Al-0.1Cu-0.94Bの焼結磁石の金属組織を示す。図5の焼結磁石には、Gaが添加されておらず、その保磁力は図1のグラフに示すように低い。\n\n【0068】\n\nまた、Bの特性X線像からわかるように、B-rich相は観察されない。Nd-Fe-Bの3元状態図に従えば、強磁性のNd2Fe17相が生成していると考えられる。Gaの添加が無く、かつ、B濃度が低い組成の焼結磁石において、保磁力が低下する原因は、このNd2Fe17相が析出するためであると考えられる。\n\n【0069】\n\n(実施例4)\n\n本実施例は、実施例1と同様にして作製した試料において、希土類元素Rの一部を重希土類Dyで置換している。磁気特性のDy置換率依存性を図6に示す。図6から、B濃度が0.93質量%という低い値でも、Gaの添加により、大きな保磁力が得られることがわかる。\n\n【0070】\n\n(実施例5)\n\n焼結磁石の組成がNd31.0質量%、Co1.0質量%、Ga0.04質量%、Al0.2質量%、Cu0.1質量%、B0.93〜1.01質量%、残部Feとなるように、各元素の原料を溶解·鋳造した。本実施例では、上記の溶解·鋳造をストリップキャスト法およびインゴット法の各々の方法によって行なった。こうして得られた合金に含まれるB量は試料ごとに0.93〜1.01質量%の範囲で異なる値を示す。\n\n【0071】\n\nこのようなB濃度の異なる合金に対して、実施例1と同様の方法で焼結磁石を作製した\n\n。但し、ストリップキャスト法の母合金を用いた場合の焼結温度は1040℃(1313K)に設定し、インゴット法の母合金を用いた場合の焼結温度は1070℃(1343K)に設定した。焼結温度での保持時間は、いずれの場合も2時間に設定した。\n\n【0072】\n\n得られた磁石の評価を、実施例1における評価と同様にして行なった。図7は、500℃(773K)で1時間の熱処理を行った後の磁気特性のB濃度依存性を示している。図7の○はストリップキャスト法による合金のデータを示し、□はインゴット法による合金のデータを示している。\n\n【0073】\n\n図7からわかるように、いずれの鋳造方法による場合でも、図1の比較例に示したGaを添加しない場合(▲)に比べ、より少ないB量でも保磁力の低下は認められず、Ga添加がB削減に有効であることがわかる。また、インゴット法を用いて作製した合金よりも、ストリップキャスト法を用いて作製した合金による場合の方が優れた効果を発揮していることがわかる。\n\n【0074】\n\nなお、本実施例におけるいずれの試料についても、酸素:0.38〜0.41質量%、窒素:0.012〜0.020質量%、炭素:0.04〜0.06質量%、水素:0.02質量%以下であった。\n\n【産業上の利用可能性】\n\n【0075】\n\n本発明によれば、B濃度を低減しても、軟磁性相の生成を抑制しながら、実質的にB-rich相(R1.1Fe4B4)を含まない高保磁力の焼結磁石を提供することができる。Bは、PRTR法管理物質に指定されているため、Bの使用を削減できること自体がすぐれた効果をもたらす。\n\n【0076】\n\nまた、本発明の組成によれば、熱処理後、B濃度に対する保磁力の変化(低下)が殆ど生じないため、B濃度に関する管理基準を緩和することができ、再現性良く高品質の焼結磁石を提供することが可能となる。\n\n【0077】\n\n本発明で使用するGaは高価な金属であるが、本発明によれば、従来に比べて極微量の添加で上記効果を得ることができるため、コストアップを生ずることがない。なお、B-rich相の消滅によって、必要なR量の削減も図れるため、それよってもコストダウンが可能である。更に、前述したように、B-rich相の消滅およびR量の削減によって耐食性が向上するという利点が得られる。\n\n【図面の簡単な説明】\n\n【0078】\n\n【図1】磁石特性のB濃度依存性を示すグラフである。グラフでは、0.02質量%のGaを添加した実施例、およびGaを添加していない比較例の各々についてのデータが示されている。\n\n【図2】磁石特性のGa濃度依存性を示すグラフである。\n\n【図3】31Nd-bal.Fe-1Co-0.2Al-0.1Cu-0.02Ga-0.93Bの焼結磁石の金属組織を示す写真である。左の写真は反射電子線像を示し、右の写真はBの特性X線像を示している。\n\n【図4】31Nd-bal.Fe-1Co-0.2Al-0.1Cu-0.02Ga-1.01Bの焼結磁石の金属組織を示す写真である。左の写真は、反射電子線像を示し、右の写真は、Bの特性X線像を示している。\n\n【図5】31Nd-bal.Fe-1Co-0.2Al-0.1Cu-0.94Bの焼結磁石の金属組織を示す。左の写真は、反射電子線像を示し、右の写真は、Bの特性X線像を示している。\n\n【図6】希土類元素Rの一部を重希土類Dyで置換した場合の磁気特性を示すグラフであ\n\nる。\n\n【図7】ストリップキャスト法とインゴット法における磁石特性のB濃度依存性を示すグラフである。', '【技术领域】\n\n【0001】\n\n本发明涉及一种基于R-T-B基烧结磁体和制造方法。\n\n发明背景\n\n【0002】\n\n作为高性能永磁体,代表性的R-T-B基永磁体具有优异的磁性,因此它用于各种应用,例如各种电动机和致动器。然而,由于电气和电子器件的小型化和重量减少,需要进一步改善磁特性,耐腐蚀性的提高和降低成本。\n\n【0003】\n\n在基于R-T-B的永磁体中,确定残留磁通密度的因子是主相的存在比及其取向。为了增加主阶段丰富率,组成是2T.14虽然它可能更接近B化合物的化学计量,但特别难以减少B.在生产中,如果B低于化学计量比,则晶界相中的软磁r负责矫顽力2Fe.17沉积相位,矫顽力显着下降。因此,B浓度需要将值略高于化学计量比与跳动值的值。\n\n【0004】\n\n出于这个原因,常规地,在晶界的富含B的相位(Nd)1.1Fe.4B.4形成沉淀的组织。丰富的相位不涉及任何磁体特性,并且当其比率增加时,残留磁通密度Br它会减少。另外,难以检测痕量B,分析精度的误差是关于B含量的约2%加阵列。因此,通过化学计量比加入更多的过多,通过减少B浓度,不能进一步提高磁体特性。\n\n【0005】\n\n另一方面,存在许多提议,其中各种元件被添加到R-T-B永磁体以改善磁特性。在那些添加剂元件中,Ga被添加到基于R-T-B基烧结磁体,R-T-B基粘合磁体,特别是通过HDDR方法通过各向异性粘合磁体。加入Ga的目的是改善烧结磁体中的矫顽力,以及在粘合磁体中,在重结晶步骤中的矫顽力改善和各向异性保持。\n\n【0006】\n\n专利文献1公开了通过将0.2至13重量%通过大众Ga加到R-T-B基烧结磁体来获得高矫顽力。专利文献2公开了通过将Nb,W,V,Ta和Mo中的至少一种与0.087至14.4重量%的GA一起加入高矫顽力。在这些文献中公开的现有技术旨在通过添加相对大量的GA来改善矫顽力。\n\n。\n\n【0007】\n\n专利文献3是r(fe1-x-y-z-uCO.xB.yGA.zM.u的)A在组合物中,公开了添加宽的Ga,0 【0008】\n\n专利文献4公开了0.3-0.7质量%的O(氧气)的Ga的添加0.01至0.5质量%,但实施例中添加的Ga的量为0.09质量%以上。是。专利文献5公开了0.25质量%的O(氧)浓度为0.01至0.5质量%的Ga,但实施例中添加的Ga量为0.08质量%以上,并且这种浓度B为1.05质量%。\n\n【0009】\n\n专利文献6和专利文献7公开了同时添加浓度0.9-1.3质量%的Ga,浓度为0.02%至0.5质量%,但添加V是必需的,B浓度至必要。一个例子未描述少于1.0%重量。\n\n【0010】\n\n专利文献8描述了7个以%以下的各种添加元素,包括Ga,但是B-富相的相对于富含Nd相的磁体成分相是必不可少的。\n\n【0011】\n\n尽管专利文献9公开了0.05至1质量%的Ga,但Nb包含为基本元件。\n\n【0012】\n\n专利文献10公开了一种使用所谓的HDDR方法制造烧结磁体的方法。公开了0至4at%的Ga加入。然而,使用氢化反应的HDDR处理Ga在HDDR处理中的功能在烧结磁体中不表达。\n\n【0013】\n\n美国专利No.尽管在加入0.01至0.5重量%Ga和Al时,但是,不公开仅在加入0.01至0.5重量%的Ga和Al中。\n\n专利文献1专利号2577373\n\n专利文献2:专利No.2751109\n\n专利文献3:专利No.3255593\n\n专利文献4255344专利No.3255344\n\n专利文献5:专利No.2966342\n\n专利文献6:专利No.3298221\n\n专利文献7298219专利No.3298219\n\n专利文献8:专利No.3296507\n\n专利No.3080275专利No.3080275\n\n专利文献10.专利No.2904571\n\n专利文献11:APHN 2002-38245\n\n发明的描述\n\n本发明要解决的问题\n\n【0014】\n\n在上述现有技术中,在任何情况下,添加相对大量的GA,或者通过组合Ga和其他添加元件来改善矫顽力。然而,通过降低B的浓度并增加主阶段的存在比来储存磁通密度B.r教导也没有提出改善。\n\n【0015】\n\n本发明是鉴于此类点的,本发明的目的是B丰的相(R.1.1Fe.4B.4通过降低丰度比率并增加主阶段的存在比来残余磁通密度B.r基于R-B基烧结磁铁得到了改善。\n\n[解决问题的手段]\n\n【0016】\n\n本发明的RTB的烧结磁体是R:27.0质量%以上,32.0质量%或更少(R是Nd,Pr,Dy,Tb中的至少一种,并且始终包括Nd或Pr中的任何一个),T:63.0质量%或更高,72.5质量%(T总含有Fe,50%或更少的T可用CO),Ga:0.01%或更多和0.08重量%或更少,和B:0.85重量%以上,B:0.85重量%或更多,其成分为0.98质量%或更低。\n\n【0017】\n\n在优选的实施方案中,M:2.0重量%或更少(M是Al,Si,Ti,V,Cr,Mn,Ni,Cu,Zn,Zr,Nb,Mo,In,Sn,HF,Ta,W包含至少一个选中组。\n\n【0018】\n\n在优选实施例中,四方r2T.14具有B型晶体结构的主要相占磁体体积的90%或更多1.1Fe.4B.4基本上没有阶段。\n\n【0019】\n\n在优选的实施方案中,氧浓度为0.5质量%以下,氮浓度为0.2质量%以下,氢浓度为0.01质量%以下。\n\n【0020】\n\n制造本发明的RTB的烧结磁体的方法是R:27.0质量%以上,32.0质量%或更低(R是Nd,Pr,Dy,Tb中的至少一种,以及Nd或Nd中的任何一个总是包括PR),T:63.0质量%或更多,72.5质量%(T总含有Fe,50%或T),Ga:0.01%或更多和0.08重量%或更低, B:0.85制备具有质量或更多和0.98质量%或更低的合金组合物的合金粉末的方法,合金的粉末,烧结和烧结烧结磁体,以及烧结磁体的400。一步在℃至600℃下进行热处理。\n\n【0021】\n\n在优选的实施方案中,制备合金粉末的步骤是通过将合金的熔融金属和通过条带铸造熔化的熔融金属和固化淬火合金来制备淬灭合金的步骤,并擦洗淬火合金。\n\n【发明效果】\n\n【0022】\n\n根据本发明,即使B的浓度降低,富含B的相位(R)基本上是1.1Fe.4B.4可以提供烧结磁铁的烧结磁铁没有)。由于B被指定为PRTR方法管理物质,因此它本身可以减少B本身的使用。\n\n【0023】\n\n此外,根据本发明的组合物,由于在热处理后几乎不产生矫顽力的矫顽力的变化(降低),因此可以缓解B浓度的管理标准,并且可再现的高质量烧结磁铁可以提供。\n\n【0024】\n\n尽管本发明中的Ga是一种昂贵的金属,但是根据本发明,由于与现有技术相比,通过添加少量可以获得上述效果,因此不产生成本增加。另外,由于可以通过富含B富相的湮灭来减少所需的R量的量,因此可能降低成本。此外,如上所述,可以提高由于B-富相位的消失和R体积的消失而改善耐腐蚀性的优点。\n\n实施本发明的最佳方式\n\n【0025】\n\n本发明人设定少量的0.01质量%以上和0.08质量%以下,并将较低的值设置在0.85质量%以上的常规情况下,或者以0.98质量%或0.98质量%少和晶界。在阶段丰富的阶段(ND1.1Fe.4B.4软磁r同时抑制生成)2Fe.17结果发现,通过发现可以抑制相位的产生来引入本发明。\n\n【0026】\n\n在本发明中,B晶界相对于谷物边界相中的B质相和软磁r通过较小量添加Ga2Fe.17由于抑制相的产生,即使当B浓度相对较低时,也可以表达优异的磁体特性,而不会导致矫顽力减小。通过微汇总此类Ga获得的效果不是常规已知的。为了将矫顽力增加在1.0质量%以上的范围内,进出在上述现有技术文献中的Ga的添加,但是B浓度为0.98质量%以下。它是第一个被揭示的通过本发明的发明人,抑制所得矫顽力减小的功能是由痕量的Ga引起的。\n\n【0027】\n\n根据本发明,即使将B浓度设定为低,矫顽力也不太可能波动,并且不需要过量加入B,因此主相的存在比率增加,并且残留磁通密度Br得到改善。虽然已知存在富含B的相对耐腐蚀性的不良影响,但是本发明的烧结磁体基本上没有B富型相,因此耐腐蚀性得到改善。\n\n【0028】\n\n此外,在本发明中,由于不需要通过过度加入B添加额外R,因此可以避免有价值的稀土元素R的不必要的消耗。此外,如果反应性稀土元素R的浓度降低,则还存在烧结磁体的耐腐蚀性进一步改善的优点。\n\n【0029】\n\n在本发明中,由于与传统的GA添加相比,仅添加较低浓度的Ga,因此可以充分获得磁体特性改善效果,同时降低所用昂贵的GA的量。\n\n【0030】\n\n虽然通过少量Ga抑制了软磁相的形成的详细机制尚不清楚,但是认为烧结后的热处理在稍后详细描述的实验结果中起重要作用。\n\n【0031】\n\n在下文中,将描述根据本发明的R-T-B基烧结磁体的优选实施例。\n\n【0032】\n\n首先,R:27.0质量%或更多,32.0质量%或更低(R是Nd,Pr,Dy,Tb中的至少一种,包括Nd或Pr中的任何一个),T:63.0质量%或更多和72.5质量%或更少(T总含有Fe,50%或更少的T可用CO),Ga:0.01%或更多和0.08质量%以下,B:0.85%或更多和0.98质量%或更低的合金。具体地,原料溶解,以便具有上述组成,冷却和凝结以制备合金。\n\n【0033】\n\n通过采用已知的一般方法,可以进行上述合金的制备。在各种合金制造方法中,条带铸造方法有效地使用。根据条带铸造方法,例如,可以获得厚度为约0.1mm至5mm的板坯。所获得的板坯被R-富型相块分散,主阶段R2T.14B相的短轴尺寸为0.1至50μm,长轴尺寸具有非常精细的柱状结构,其具有5μm的厚度和厚度。随着这种柱状组织的存在,可以获得高磁性。可以采用离心铸造方法来代替带材铸造方法。此外,代替溶解和合金化的方法,可以使用直接还原扩散法生产组合物的合金。\n\n【0034】\n\n将所得合金通过已知方法研磨至平均粒径为1至10μm。像这样\n\n可以通过执行两种类型的破碎过程和粉碎步骤来适当地制造合金的粉末。粗磨可以通过储氢磨削方法,使用盘式磨机的机械研磨方法进行。另外,细粉化可以通过机械研磨方法如喷射磨机研磨方法,球磨机,磨损器进行。\n\n【0035】\n\n通过上述研磨获得的细碎粉末使用已知的模制技术成形为各种形状。使用磁场 - 磁性成形方法形成常用,但是在脉冲取向或模塑之后,可以使用在橡胶模具中模制和模制的方法进行。\n\n【0036】\n\n粉末如脂肪酸酯和固体润滑剂,如脂肪酸酯或固体润滑剂,例如硬脂酸锌如脂肪酸酯和固体润滑剂,如硬脂酸锌,例如脂肪酸酯,以提高喂养和密度的效率模塑的时间,模塑密度等。优选加入粉末之后和/或细分。相对于100重量份粉末,添加量优选为0.01重量份至5重量份。\n\n【0037】\n\n模塑后的模塑体可以通过已知方法烧结。烧结温度优选为1000℃至1180℃,烧结时间优选为约1至6小时。在烧结后对烧结体进行预定的热处理。通过该热处理,根据本发明的Ga的添加量,B的还原效果变得更加显着。热处理条件在400℃至600℃的温度下,约1至8小时。\n\n【0038】\n\n[组成有限原因]\n\nR是稀土烧结磁体的基本元件,并且可以选自Nd,Pr,Dy,Tb中的至少一种。然而,希望R总是包含ND或PR中的任何一个。更优选地,使用由ND-DY,ND-TB,ND-PR-PAD或ND-PR-TB表示的稀土元素的组合。\n\n【0039】\n\n在稀土元素中,Dy和Tb表现出特别有效的矫顽力。除了上述元件之外,还可以含有其他稀土元素,例如少量CE和La,或者也可以使用Mustomal或Dijimmes。此外,R没有纯元素,并且可以是在工业上可用范围内的制造不可避免的杂质。含量小于27.0质量%,高磁性,特别是高磁力,如果超过32.0质量%,则剩余磁通密度降低,使其27.0质量%或更高,32.0%质量或更少。\n\n【0040】\n\nT始终包括FE,50%或更少可以用CO替换。此外,可以含有除Fe和Co以外的少量过渡金属元素。 CO有效改善温度特性和耐腐蚀性的提高,通常组合为10%(重量)或更少的CO和剩余Fe。当含量小于63.0质量%质量时,残留的磁通量密度降低,如果超过72.5质量%,则矫顽力降低,使其为63.0质量%以上,72.5质量%或更低。\n\n【0041】\n\nGa是本发明的一个基本要素。传统上,将Ga加入相对大量的量(0.08质量%以上),以便主要是改善矫顽力,但在本发明中,B减小到B非常接近化学计量比的区域。此外,到目前为止尚未预测的效果不会发生矫顽力的降低。\n\n【0042】\n\n在本发明中,Ga的含量设定为0.01质量%以上和0.08质量%或更低。如果小于0.01质量%,则不能获得上述特性,并且通过分析的管理变得困难。如果它超过0.08质量%,则稍后描述的残余磁通密度Br它不是优选的,因为它会降低\n\n【0043】\n\n单独添加本发明的Ga,即,不组合添加其他添加剂元素\n\n它可以有效。然而,其他目的,例如,为了进一步改善矫顽力,可以添加稍后描述的M元素。\n\n【0044】\n\nB是必需元素,如上所述,其含量可以是0.85质量%以上,0.98质量%或更小,其非常接近通过含Ga的化学计量比。\n\n【0045】\n\nB小于0.85%(重量)和软磁率2Fe.17相沉积物和矫顽力显着下降,0.98当超过质量%时,富含B的相增加并且不能获得残留的磁通密度。因此,在本发明中,B浓度设定为0.85质量%以上,0.98质量%或更低。特别优选的范围为0.90质量%以上和0.96质量%以下。如上所述,根据本发明,由于B的浓度降低,因此富含B的相(R)基本上来自烧结磁体的组成相(R.1.1Fe.4B.4并且可以增加主阶段的体积比。结果,可以提高烧结磁体的残余磁通密度而不会导致矫顽力减小。\n\n【0046】\n\nB的一部分可以由C取代。已知这种更换以增强磁体的耐腐蚀性。即使在本发明的磁体中,也可以用C替换B,但是C取代不是优选的,因为它涉及矫顽力的降低。 C是在磁体中制造正常烧结磁体的方法,B未在主阶段中更换,并且晶界作为诸如稀土碳化物的杂质存在,并且磁性降低。\n\n【0047】\n\n可以添加元素以改善矫顽力。 M元素是Al,Si,Ti,V,Cr,Mn,Ni,Cu,Zn,Zr,Nb,Mo,In,Sn,HF,Ta和W中的至少一种。添加量优选为2.0质量%以下。如果超过2.0质量%,则剩余磁通密度降低。\n\n【0048】\n\n在本发明中,除了上述元件之外,可以容忍不可避免的杂质。例如,Mn,Cr和Al,Si,Cu等与Fe,Al,Si,Cu等混合。\n\n【0049】\n\n上述组合物的组成,之前通过使用粉末冶金装置制造烧结磁体,所得烧结磁体中的构成相是2T.14具有B型晶体结构的主要相占磁体体积的90%或更多1.1Fe.4B.4该阶段基本上是免费的。\n\n【0050】\n\n另外,在所获得的烧结磁体中,优选氧气:0.5质量%以下,氮:0.2质量%以下,氢:0.01质量%以下。通过以这种方式限制氧,氮和氢浓度的上限,可以增加主相比,并且残留磁通密度Br可以增强。\n\n【例子】\n\n【0051】\n\n(例1)\n\n重量,CO 1.0重量%,CO 1.0重量%,0.02重量%,B0.93至1.02重量%,Al 0.2重量%,Cu 0.1重量%,以及组合物的每个元素组成Fe溶解,条带铸法凝固。在以这种方式获得的每种B量的脆化之后,它通过氢气压力造成的氢气脆化方法,真空保持在600℃(873k),并冷却以获得原料粗粉。稻田。使用气流研磨机(日本中性为PJM,将该原料粗粉与氮气气氛研磨。任何样品,所得细粉的粒度为3.0±0.1μm,用于测量FSSS。\n\n【0052】\n\n在0.8mA / m的磁场中,将该细粉末成196MPa的压力模塑。模塑体的尺寸为15mm×20mm×20mm。在成型期间,润滑剂和粘合剂是一个\n\n使用正交磁场成型机,使用正交磁场模制机,磁场标记方向和压力方向彼此正交。\n\n【0053】\n\n使用真空烧结炉将模塑主体保持在800℃(1073k)1小时,然后在1040℃(1313k)保持2小时并烧结。在此时的炉大气中,通过在引入氩气(AR)的同时抽空真空的方法,在300Pa下将Ar部分压力保持在300Pa。通过用Ar气回收到大气压并在流动的AR时冷却来进行冷却。\n\n【0054】\n\n加工所获得的烧结体后,通过BH示踪剂评价磁体特性,在AR气氛中在500℃(773k)处进行热处理,并进行热处理1小时,进行加工再次,与BH示踪剂的磁铁特性。评估。\n\n【0055】\n\n在评估磁体特性之后,将每个样品用350℃(623k)热处理,以热破坏,并在热消化后,在氮气氛中的钢砂浆中粉碎,并通过ICP,天然气分析通过分析仪,通过TDS的氢分析碳,氮,氧分析,进行TDS氢分析。下列数据中所示的组成是烧结磁体本身的所有分析值。密度是Alchimedes方法的测量。\n\n【0056】\n\n在图2中示出了所得烧结体的残余磁通密度(BR),矫顽力(HCJ)和烧结密度。此外,在500℃下在500℃下在500℃下热处理后的磁性。图。图1是表示磁体特性的B浓度依赖性的曲线图。在图表中,示出了所添加的实施例中的每一个和对比例的数据的数据被示出。图中的○图表明了在没有热处理(烧结:烧结)的情况下的测量结果,并且示出了曲线被热处理(热处理)的情况下的测量结果。\n\n【0057】\n\nr卷(nd)常数b。b。br尽管本发明得到改善,但该实施例(无热处理,●:热处理后),即使在B浓度低的区域中,矫顽力也不会劣化,特别是在热处理之后。特别地,当B浓度为0.98质量%或更低时,可以看出通过添加热处理而大大提高了矫顽力。\n\n【0058】\n\n另一方面,对比例(δ:无热处理,▲:热处理后),当B浓度为0.98质量%或更低时,矫顽力快速降低。通过热处理不会改善矫顽力的降低。\n\n【0059】\n\n在所有样品中,氧气:0.36-0.40质量%,氮:0.004-0.015重量%,碳:0.04-0.05质量%,氢气:0.002质量%或更小。\n\n【0060】\n\n(例2)\n\n图。图2是表示R的情况下R固定为31质量%的情况下的磁体特性和密度,并且将B至0.94质量%和Ga的量改变。 B浓度(0.94质量%)被设定在其中显着观察到GA加法效果的组成范围内,从图2的曲线图可以看出。\n\n【0061】\n\n本实施方案中的样品制备方法与实施例1中的样品制备方法相同。在图2的图中,如图2所示,根据磁铁特性而不用热处理所示○,通过添加Ga的矫顽力H.cJ可以看出它改善了。此外,根据●,根据●,Ga的Ga(0.01质量%)的Ga(0.01质量%)的量更有效地强制力H.cJ可以看出它改善了。\n\n【0062】\n\n同时,残留磁通密度B.rGA浓度表明峰值为约0.04%(重​​量)。特别是\n\n当浓度超过0.08质量%时,残留磁通密度Br尽管烧结体的密度提高了烧结体的密度,但在没有GA的情况下,残留的磁通量密度Br可以看出它将低于。\n\n【0063】\n\n从上述情况下,可以看出,当如本发明中B的浓度设定为低时,必须将GA浓度设定为0.08质量%或更小。当GA浓度超过过去的质量超过0.08质量%时,残余磁通密度B.r由于发生减少,这不是优选的。\n\n【0064】\n\n注意,该数据的样品是氧气:0.38-0.44重量%,氮:0.004-0.012重量%,碳:0.03-0.05重量%,氢气:0.002重量%或更低。\n\n【0065】\n\n(例3)\n\n机械处理后的磁铁机械处理并抛光用于实施例1中使用的样品,并且观察到金属组织。图。图3显示了31nd-BAL.FE-1CO-0.2AL-0.1CO-1CO-0.2AL-0.1 CU-0.02Ga-0.93b的烧结磁体的金属组织。图3中的左图。图3表示反射电子束图像,右侧的图像显示了B的特征X射线图像。在该组合物中,可以看出B的累积点未被识别,并且基本上没有B-富级相。\n\n【0066】\n\n(比较例)\n\n机械处理后的磁铁机械处理并抛光用于实施例1中使用的样品,并且观察到金属组织。图。图4显示了31nd-BAL.FE-1CO-0.2AL-0.1CO-1CO-0.2AL-0.1 CU-0.02Ga-1.01b的烧结磁体的金属组织。图4中的左图。图4示出了反射电子束图像,右侧的图像显示了B的特征X射线图像。从图4中可以看出,观察到B的累积点。也就是说,如果B是过量的组成,即使添加GA,也会产生富含B的相。\n\n【0067】\n\n图。图5显示了31nd-BAL.FE-1CO-0.2AL-0.1CU-0.94b的烧结磁体的金属组织。 Ga未添加到图1的烧结磁体中。如图5所示,其矫顽力如图2的曲线图所示。\n\n【0068】\n\n而且,从B的特征X射线图像中可以看出,没有观察到丰富的相位。根据ND-Fe-B括号图的铁磁ND2Fe.17认为是生成的阶段。具有低B和低B浓度的组合物的烧结磁体中矫顽力的降低的原因是这个nd2Fe.17认为该相沉淀。\n\n【0069】\n\n(例4)\n\n在以与实施例1中相同的方式制造的样品中,将稀土元素R的一部分用重稀土Dy替换。磁性特性的Dy替换率依赖性如图2所示。从图6中,可以看出,即使B浓度为0.93质量%,也可以通过添加Ga获得Ga的添加。\n\n【0070】\n\n(例5)\n\n烧结磁体的组合物为Nd31.0质量%,Co 1.0质量%,Ga 0.04质量%,Al 0.2重量%,Cu 0.1重量%,B0.93至1.01质量%,以及其余的部分Fe。,每个元素的原料溶解并浇铸。在该实施例中,通过每个条带铸造方法和铸锭方法的方法进行上述溶解和铸件。由此获得的合金中所含的B的量表明每个样品的0.93-1.01质量%的不同值。\n\n【0071】\n\n以与具有不同B浓度的合金的实施例1相同的方式制备烧结磁体\n\n。然而,当使用带钢铸方法的母合金时,将使用母线的母合金的烧结温度设定为1040℃(1313 k),并且当使用铸锭方法的母合金时,烧结温度设定为1070℃( 1343 k)。在每种情况下,烧结温度的保持时间设定为2小时。\n\n【0072】\n\n以与实施例1中的评价相同的方式进行所得磁体的评价。图7显示了在500℃下热处理1小时后磁性的B浓度依赖性(773k)。图7的○。图7表示通过条带铸造方法的合金数据,□通过铸锭法表示合金的数据。\n\n【0073】\n\n从图1中可以看出。如图7所示,即使在任何铸造方法的情况下,如果图7所示的比较例中所示的GA,则不添加1(▲),即使B容积较少,也不会观察到矫顽力的降低和加入Ga。可以看出,减少B.另外,可以看出,使用带材铸造方法生产的合金的情况的情况大于使用铸锭法生产的合金。\n\n【0074】\n\n另外,关于该实施例中的任何样品,氧气:0.38至0.41质量%,氮:0.012至0.020质量%,碳:0.04-0.06质量%,氢气:0.02质量%以下。\n\n【工业可用性】\n\n【0075】\n\n根据本发明,即使B的浓度降低,富含B的相位(R)基本上是1.1Fe.4B.4可以提供烧结磁铁的烧结磁铁没有)。由于B被指定为PRTR方法管理物质,因此它本身可以减少B本身的使用。\n\n【0076】\n\n此外,根据本发明的组合物,由于在热处理后几乎不产生矫顽力的矫顽力的变化(降低),因此可以缓解B浓度的管理标准,并且可再现的高质量烧结磁铁可以提供。\n\n【0077】\n\n尽管本发明中的Ga是一种昂贵的金属,但是根据本发明,由于与现有技术相比,通过添加少量可以获得上述效果,因此不产生成本增加。另外,由于可以通过富含B富相的湮灭来减少所需的R量的量,因此可能降低成本。此外,如上所述,可以提高由于B-富相位的消失和R体积的消失而改善耐腐蚀性的优点。\n\n[简要描述;简介]\n\n【0078】\n\n【图1】图3是表示磁体特性的B浓度依赖性的图。在图表中,示出了所添加的实施例中的每一个和对比例的数据的数据被示出。\n\n【图2】图3是表示磁体特性的GA浓度依赖性的图。\n\n图3.31nd-bal.fe-1co-0.2al-0.1 cu-0.02ga-0.93b是显示烧结磁体的金属组织的照片。左侧的图片表示反射电子束图像,右侧的图像显示了B的特征X射线图像。\n\n图4.31ND-BAL.FE-1CO-0.2AL-0.1 CU-0.02GA-1.01B是显示烧结磁体的金属组织的照片。左侧的图片表示反射电子束图像,右侧的图像显示了B的特征X射线图像。\n\n图5.31ND-BAL.FE-1CO-0.2AL-0.1 CU-0.94 B烧结磁体。左侧的图片表示反射电子束图像,右侧的图像显示了B的特征X射线图像。\n\n6.图3是表示稀土元素r代替重物稀土的一部分时的磁性的图表\n\n。\n\n图7.图3是表示条形铸造方法和铸锭法的磁体特性的B浓度依赖性的曲线图。');
INSERT INTO `os_patent_instruction_text` VALUES (13016, 22845, 'FIELD OF THE INVENTION\n\n[0001]The present invention relates to an apparatus comprising pluralities of permanent magnets arranged in a ring shape with a center hole such that their magnetization directions are successively changed to generate a uniform, parallel magnetic field in the hole, and a magnetic field orientation apparatus comprising such a magnetic-field-generating apparatus, for instance, a furnace for heat-treating wafers with magnetic films in a magnetic field to orient the magnetic films in one direction, a die for magnetically orienting sintered permanent magnets and resin-bonded magnets so that they have magnetic anisotropy in the process of compression molding or extrusion molding, etc.\n\nBACKGROUND OF THE INVENTION\n\n[0002]A conventionally known apparatus for obtaining magnetic field strength without using exciting current is a Halbach-type magnetic circuit. This magnetic circuit is disclosed in “Journal of Applied Physics,” Vol. 86, No. 11, Dec. 1, 1999, “Journal of Applied Physics,” Vol. 64, No. 10, Nov. 15, 1988, and Japanese Patents 2,704,352 and 3,115,243. This Halbach-type magnetic circuit comprises pluralities of permanent magnet segments having different magnetization directions arranged to form a synthetic magnetic field oriented in one direction. In the cylindrical arrangement of pluralities of permanent magnet segments SB1 to SB12 shown in FIG. 17, for instance, a permanent magnet segment SB1 is adjacent to the next permanent magnet segment SB2 having a magnetization direction at a certain angle θ to the magnetization direction of the segment SB1, and the subsequent permanent magnet segments are arranged similarly so that their magnetization directions are changed successively, thereby generating a strong, uniform, parallel magnetic field B in the center hole of a magnetic circuit. The conventionally known Halbach-type magnetic circuits have a cylindrical or rectangular magnetic circuit.\n\n[0003]Apparatuses comprising conductive coils or superconductive coils are also known as magnetic field sources for apparatuses for generating as strong a magnetic field as about 1 T (Tesla).\n\n[0004]A magnetic-field-generating apparatus needing such a strong, uniform magnetic field will be explained, taking a heat treatment step of wafers with magnetic films in a magnetic field for example.\n\n[0005]Magnetoresistive (MR) heads, giant magnetoresistive (GMR) heads, magnetic random access memory (MRAM), etc. generally have structures in which pluralities of ferromagnetic films are laminated on a substrate. For instance, the GMR head has a structure comprising a non-magnetic, insulating film between ferromagnetic films. The MRAM has a structure comprising an antiferromagnetic film, a pinned magnetic film, a non-magnetic conductive film and a free magnetic layer in this order from the side of a substrate. The pinned film and the antiferromagnetic film should have magnetization oriented in one direction as a whole.\n\n[0006]This orienting step is carried out just after the formation of films on a substrate by sputtering or reactive deposition, and thus it needs a heat treatment in a uniform, parallel magnetic field. An oriented magnetic field of 0.5 T (tesla) or more is usually necessary to be applied, and an oriented magnetic field of more than 1.0 T is necessary depending on the materials of the pinned film or the antiferromagnetic film.\n\n[0007]Described in U.S. Pat. No. 6,303,908 is a furnace for heat-treating wafers while applying an oriented magnetic field. A magnetic field-generating means in, this furnace comprises an electromagnetic coil, to which as large electric current as 500-800 A should be supplied to generate a magnetic field of 1.0 T or more. Accordingly, such a magnetic field-generating means uses large electric power, needing safety means and other facilities, and thus a large cost for generating a magnetic field and a large amount of cooling water to remove heat generated by large electric current. Also, because this magnetic field-generating means comprises an iron core and an electromagnetic coil, it weighs 3 to 5 tons to generate a large magnetic field, resulting in restricted installation sites on floors with small strength. Further, because there is an extremely large leaked magnetic flux in the above structure, there should be a large space in addition to a facility space for the sake of safely. In addition, the apparatus should be enclosed by a magnetic body such as iron, Permalloy, etc. to prevent adverse influence on nearby electronic equipments and humans.\n\n[0008]A superconductive coil can generate a magnetic field without using large electric power. Though the superconductive coil consumes less exciting current than an electromagnet, liquid nitrogen or helium should always be consumed to keep superconductivity, resulting in a high operation cost. Also, in a system using a superconductive coil, the variation of a magnetic field turns superconductivity to normal conductivity locally, resulting in heat generation in the coil, and if this state were left to stand, the superconductivity of the entire apparatus would be destroyed. Though the superconductive coil can generate as strong a magnetic field as several teslas to several tens of teslas, the range of a strong leaked magnetic field expands in proportion to its magnetic field strength like the electromagnet. Accordingly, it seriously suffers from the problem of a leaked magnetic field like the electromagnet.\n\n[0009]JP 11-25424 A proposes a magnetic field-applying apparatus comprising permanent magnets. However, because this apparatus mostly serves to adjust a magnetic field distribution, it generates only a small magnetic field strength, unusable for an orientation apparatus using a strong magnetic field.\n\n[0010]Magnetic circuits using electromagnets or superconductive magnets appear to suffer from problems in terms of the generation of a uniform magnetic field. Thus, a Halbach-type magnetic circuit using only permanent magnets is considered promising to solve the above-mentioned problems.\n\n[0011]When a wafer having a magnetoresistive film is heat-treated, as large a magnetic field as 1.0 T or more is generally required to stably improve magnetoresistance. Further, the magnetic field need be applied uniformly and in parallel to the magnetization direction of the magnetic film. However, the conventional magnetic-field-generating apparatus using electromagnets, superconductive magnets or permanent magnets cannot generate a strong, uniform, parallel magnetic field.\n\n[0012]The inventors have thus considered the use of a Halbach-type magnetic circuit as such a magnetic-field-generating apparatus. However, there is no precedent of using the Halbach-type magnetic circuit for a magnetic-field-generating apparatus for such a heat-treating furnace, needing to investigate the uniformity and parallelness of a magnetic field in a magnetic circuit hole.\n\n[0013]It has thus been found that a magnetic field generated by the Halbach-type magnetic circuit is not necessarily uniform. As shown by MS in FIG. 17, for instance, a magnetic flux has disturbed linearity at a tip end in a progressing direction, resulting in non-parallelness, which is called “magnetization bending.” Magnetic field parallelness, which may be called deviating angle or skew angle, is used as an index of the degree of magnetization bending. This indicates an x component vertical to a main magnetic-field-generating direction, namely a deviation (degree) of a magnetic field-applying direction in a cross section (x-y plane) from the main magnetic-field-generating direction (y direction) in a uniform magnetic field region. It is required that this deviation is as small as possible in a region, in which wafers are subjected to an orientation treatment. Specifically, a magnetic field parallelness of ±2° or more adversely affects magnetic film characteristics.\n\n[0014]Particularly, this magnetic-field-generating apparatus has a cylindrical center hole, in which magnetic field parallelness drastically decreases as separating from a longitudinal center. The above magnetic field parallelness of within +2° is satisfied only in a region corresponding to a half-length or less of this cylindrical hole. Accordingly, the magnetic-field-generating apparatus should have a cylindrical hole as long as two times or more a treatment region to surely treat sufficient numbers of articles, resulting in larger size and higher production cost.\n\nOBJECTS OF THE INVENTION\n\n[0015]Accordingly, an object of the present invention is to provide an apparatus for generating a uniform, parallel magnetic field as strong as 1.0 T or more with suppressed magnetization bending in a cylindrical hole over a substantially entire length thereof.\n\n[0016]Another object of the present invention is to provide a magnetic field orientation apparatus comprising the above magnetic-field-generating apparatus, suitable for a furnace for heat treatment in a magnetic field, etc., which can be operated safely at a low cost with high accuracy.\n\nSUMMARY OF THE INVENTION\n\n[0017]The magnetic-field-generating apparatus of the present invention comprises permanent magnet segments in the number of N, wherein N is an even number of 4 or more, arranged to form a ring-shaped magnetic circuit having a center hole; adjacent permanent magnet segments having such different magnetization directions that their magnetization directions successively change along a circumferential direction of the magnetic circuit; a basic magnetization phase angle θ between the magnetization directions of the adjacent permanent magnet segments being 720/N (°); and a magnetization direction of at least one permanent magnet segment in an essential unit obtained by circumferentially dividing the ring to ¼ being deviated from the basic magnetization phase angle θ by such a deviating angle that a uniform magnetic flux flows in one direction along a diameter of the center hole.\n\n[0018]A magnetic field orientation apparatus of the present invention can further comprise a heat treatment apparatus disposed in the hole of the magnetic-field-generating apparatus, the heat treatment apparatus comprising a cooling means, a heating means, and a means for holding articles to be heat-treated in this order from outside.\n\n[0019]Because the ring-shaped magnetic circuit have four symmetric quarters as shown in FIG. 1, the explanation of the magnetic circuit can be made referring to an upper right quarter ring (quarter magnetic circuit in the first quadrant), which may be called an essential unit. The magnetization direction of this essential unit changes in a clockwise direction, and at least one permanent magnet segment therein has a magnetization direction deviated from the basic magnetization phase angle θ in a clockwise direction.\n\n[0020]In one embodiment of the present invention, the permanent magnet segments are arranged with a predetermined gap between the adjacent ones. The gap may be filled with a non-magnetic body.\n\n[0021]Investigation has been conducted, presuming that a magnetization bending phenomenon affects a relative position of magnetic flux to each permanent magnet segment in the magnetic-field-generating apparatus. As a result, it has been found that the magnetization bending phenomenon can be effectively eliminated by deviating the magnetization directions of permanent magnet segments constituting the magnetic circuit from the basic magnetization phase angle θ.\n\n[0022]In the essential unit in the first quadrant, a permanent magnet segment having a magnetization direction to be deviated from the basic phase angle θ clockwise is most desirably a segment arranged at about 45°. The degree of deviation from the basic magnetization phase angle θ is desirably +15° or less, assuming that the clockwise direction is a positive direction. However, the deviation from the basic magnetization phase angle θ preferably does not go to a minus direction. The deviation is preferably +1° to +20°, more preferably +5° to +10°, particularly about +5°.\n\n[0023]The magnetic-field-generating apparatus of the present invention is constituted by a substantially ring-shaped magnetic circuit. Referring to FIG. 1, in order that magnetic flux flows in one direction along a diametric direction of the hole, magnetization directions successively change clockwise in the first and third quadrants, and counterclockwise in the second and fourth quadrants. The segments most effective for suppressing magnetization bending are about 45° in the first quadrant, about 135° in the second quadrant, about 225° in the third quadrant, and about 315° in the fourth quadrant, from a positive part of the y-axis (axis of ordinates).\n\n[0024]In the magnetic-field-generating apparatus of the present invention, the number N of permanent magnet segments is preferably 8 to 20, more preferably 10 to 16, particularly 12 from the aspects of the strength, uniformity and parallelness of a magnetic field, the easiness of assembling a magnetic circuit, and a production cost.\n\n[0025]In the magnetic-field-generating apparatus, the magnetic field parallelness (deviating angle or skew angle) at least at about 45° is within ±1° within 50 to 70% from the center of the hole in a substantially entire axial region of the magnetic circuit.\n\n[0026]Also, the present invention provides a magnetic field orientation apparatus comprising the above magnetic-field-generating apparatus around a magnetic orientation die for producing permanent magnets.\n\nBRIEF DESCRIPTION OF THE DRAWINGS\n\n[0027]FIG. 1 is a schematic perspective view showing the structure of one example of the magnetic-field-generating apparatus of the present invention;\n\n[0028]FIG. 2 is a view showing a magnetic field distribution in a center hole of the magnetic-field-generating apparatus of the present invention;\n\n[0029]FIG. 3 is a graph showing the change of magnetic field parallelness in the magnetic-field-generating apparatus of the present invention when part of permanent magnet segments change their phase angles;\n\n[0030]FIG. 4 is a graph showing the change of magnetic field parallelness in the magnetic-field-generating apparatus of the present invention when part of permanent magnet segments change their phase angles;\n\n[0031]FIG. 5 is a graph showing the relation between magnetic field parallelness and an axial position at various deviating angles Ψ from the magnetization phase angle θ in the magnetic-field-generating apparatus of the present invention;\n\n[0032]FIG. 6 is a view showing examples of the arrangement of permanent magnet segments in the magnetic-field-generating apparatus of the present invention;\n\n[0033]FIG. 7 is a graph showing the dependence of magnetic field parallelness on axial length in the magnetic-field-generating apparatus of the present invention;\n\n[0034]FIG. 8 is a graph showing the relation between the uniformity of a magnetic field and the number of segments in the magnetic-field-generating apparatus of the present invention;\n\n[0035]FIG. 9 is a graph showing the relation between the strength of a center magnetic field and the number of segments in the magnetic-field-generating apparatus of the present invention;\n\n[0036]FIG. 10 is a graph showing the relation between a maximum skew angle and the number of segments in the magnetic-field-generating apparatus of the present invention;\n\n[0037]FIG. 11(a) is a schematic view showing an example of the magnetic-field-generating apparatus of the present invention, in which there are gaps between permanent magnet segments;\n\n[0038]FIG. 11(b) is a schematic view showing an example of the magnetic-field-generating apparatus of the present invention, in which there are no gaps between permanent magnet segments;\n\n[0039]FIG. 12 is a cross-sectional view showing one example of a furnace for heat treatment in a magnetic field using the magnetic-field-generating apparatus of the present invention;\n\n[0040]FIG. 13 is a diagram showing a heat treatment process using the furnace for heat treatment in a magnetic field;\n\n[0041]FIG. 14 is a cross-sectional view showing one example of an extrusion-molding apparatus using the magnetic-field-generating apparatus of the present invention;\n\n[0042]FIG. 15 is an enlarged cross-sectional view showing a forming die assembly of the extrusion-molding apparatus;\n\n[0043]FIG. 16 is a cross-sectional view taken along the line A—A in FIG. 15; and\n\n[0044]FIG. 17 is a plan view showing an example of a conventional Halbach-type magnetic circuit.\n\nDETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS\n\n[0045]Embodiments of the present invention will be explained in detail below.\n\n[0046]FIG. 1 is a schematic perspective view showing the magnetic-field-generating apparatus of the present invention, in which permanent magnet segments with different magnetization directions are assembled in a ring shape to constitute a cylindrical Halbach-type magnetic circuit. In this example, the ring is divided to 12 segments, and each permanent magnet segment S1 to S12 is constituted by pluralities of permanent magnets M assembled such that a synthetic magnetic field of these permanent magnets is directed as shown by the arrows B.\n\n[0047]In this magnetic-field-generating apparatus 1, a magnetization phase angle θ between the magnetization directions of adjacent permanent magnet segments is determined by θ=720/N(°). Accordingly, when the number N of permanent magnet segments is 8, 10, 12, 16, 20, the magnetization phase angle θ is 90°, 72°, 60°, 45° and 36°, respectively. This is called “basic magnetization phase angle.” A successively changing magnetization direction can be obtained by assembling the permanent magnet segments at this angle, thereby forming a uniform magnetic field B in a center hole C10 in parallel to its diametric direction as shown in FIG. 1. However, a magnetization-bending phenomenon actually occurs to some extent, because the drastic change of a magnetization direction between pluralities of segments affects a magnetic field in a center hole. A means for buffering this effect is to increase the number of segments to reduce magnetic variations in the hole, thereby securing a uniform magnetic field in a wider region. In other words, increase in the number of segments is preferable for the formation of wide region of a uniform magnetic field. However, about 10 segments are necessary, and up to 20 segments are practical, taking into consideration characteristics and production cost.\n\n[0048]To obtain a uniform magnetic field in a wider region, it is necessary to reduce magnetization bending in an axial (length) direction of a magnetic circuit. This is “to increase magnetic field parallelness,” or “to reduce a deviating angle or a skew angle.” To minimize this value leads to the suppression of the magnetization bending. The present invention is based on the discovery that the magnetization bending can be reduced by changing the magnetization directions of the permanent magnet segments from the above basic phase angle. Specifically, using a model of a 12-divided, ring-shaped magnetic circuit, investigation has been conducted on a quarter ring as an essential unit. The calculation results of a magnetic field distribution in the hole are shown in FIG. 2. This figure shows the magnetic field parallelness by contour lines C1. This analysis has indicated that because the magnetic field parallelness is minimum (a deviating angle or a skew angle is maximum) at about 45° on an outer surface of the essential unit, the magnetization direction of the magnet at about 45° affects the uniformity of a magnetic field.\n\n[0049]The magnetic field parallelness will then be explained. When a magnetization direction changes from a basic angle by an angle Ψ of ±5° in permanent magnet segments S1, S6, S7, S12 at 15°, 165°, 195° and 345°, respectively, from a positive part of the y-axis in the ring-shaped magnetic circuit in FIG. 1, the magnetic field parallelness changes in the hole in an axial (length) direction as shown in FIG. 3. In FIG. 3, the axis of ordinates indicates the magnetic field parallelness, and the axis of abscissas indicates the length of the magnetic circuit. Accordingly, FIG. 3 shows the change of a magnetic field parallelness in a range of ±300 mm vertically from the center of the magnetic circuit in an axial (length) direction.\n\n[0050]FIG. 4 shows the change of a magnetic field parallelness in the hole of a magnetic circuit in an axial direction, when the magnetization direction changes from the basic angle by an angle Ψ of ±5° in permanent magnet segments S3, S4, S9 and S10 at 75°, 105°, 255° and 285°, respectively, from a positive part of the y-axis.\n\n[0051]Similarly, FIG. 5 shows the change of a magnetic field parallelness in the hole of a magnetic circuit in an axial direction, when the magnetization direction changes from the basic angle by an angle Ψ of −5° to +15° in permanent magnet segments S2, S5, S8 and S11 at 45°, 135°, 225° and 315°, respectively, from a positive part of the y-axis.\n\n[0052]As shown in these figures, the magnetic field parallelness can be kept within 1° at Ψ of about 5° in the entire axial direction of the magnetic circuit. However, as shown in FIG. 5, when a permanent magnet segment positioned at about 45° in a magnetic circuit of each essential unit is inclined, the magnetic field parallelness is within ±0.5° at Ψ=5°, exhibiting higher effect of increasing the magnetic field parallelness. It is thus confirmed that the magnetic field parallelness can be increased, and thus the magnetization bending can be suppressed, by changing the basic phase angles of the permanent magnet segments, and that the magnetic field parallelness can be more effectively increased by changing the phase angles of segments arranged at about 45° in each magnetic circuit.\n\n[0053]Next, with respect to an essential unit on upper right of a quarter ring, an in-plane magnetic flux density distribution (corresponding to FIG. 2) has been investigated at deviating angles Ψ of −5° to +15° from the basic magnetization phase angle θ, assuming that a clockwise direction is positive. Specifically, the magnetic field parallelness (deg) was determined in an entire axial length (±300 mm) of a magnetic circuit at a position of 45°. The results are shown in FIG. 5. In FIG. 5, the axis of ordinates indicates a magnetic field parallelness, and the axis of abscissas indicates the length of a magnetic circuit. Thus, FIG. 5 shows the change of a magnetic field parallelness over ±300 mm from the center of magnetic circuit. It is clear from FIG. 5 that over 300 mm from the center of a magnetic circuit, there is a large region having a magnetic field parallelness of 1° or more, and even a region having a magnetic field parallelness of 1.5° or more, at a deviating angle Ψ of −5°. At a deviating angle Ψ of 0°, there are some regions (near ±300 mm at both ends), in which the magnetic field parallelness exceeds 1°. On the other hand, at deviating angles Ψ of 5° to 10°, the magnetic field parallelness is within ±1° in an entire axial region. However, it has been found that at a deviating angle Ψ of 15°, the magnetic field parallelness exceeds −1° and is close to −1.5°, resulting in a large deviation from the magnetic field parallelness. Though the optimum range of the deviating angle Ψ may be slightly different depending on the dimension of a magnetic circuit, etc., it is generally 0°[0054]A permanent magnet segment having a phase angle to be deviated is a segment S2 positioned at about 45° in the essential unit shown in FIG. 2. Additional segments having phase angles to be deviated are a segment S5 at about 135°, a segment S8 at about 225° and a segment S11 at about 315° in the entire magnetic circuit shown in FIG. 1, the segments S2, S8 being changed in the clockwise direction, and the segments S5, S11 being changed in the counterclockwise direction, within the deviating angles Ψ of 15° or less. There may be, for instance, types A and B of segment arrangements different in an x-y plane as shown in FIG. 6. In the case of the type B, it is desirable that phase angles are changed in two segments S2, S3 arranged at about 45°.\n\n[0055]It is known that the magnetic field parallelness also depends on the axial length of a magnetic circuit. As shown in FIG. 7, the larger the axial length of a magnetic circuit, the better the parallelness. Though the axial length of about 300 mm or more is desirable, the longer magnetic circuit results in a drastically increased weight. Accordingly, it is desirable to reduce the length of the magnetic circuit while keeping the parallelness. The change of the magnetization phase angle θ not only corrects the magnetization bending but also increases the precision of the magnetic field parallelness, making it possible to reduce the length of the magnetic circuit while keeping a parallelness equal to the conventional one. Only part of the magnetic circuit can be used for an orientation treatment, because the magnetic field parallelness is conventionally poor at both ends. However, the present invention makes it possible to use the entire magnetic circuit. Therefore, various magnetic film-carrying wafers, etc. can be treated at different orientation magnetic field strengths in the same apparatus, making it unnecessary to use pluralities of apparatuses corresponding to different orientation magnetic field strengths, thereby drastically reducing a facility cost.\n\n[0056]Permanent magnets used in the permanent magnet segments are preferably those having a residual magnetic flux density of 1.1 T or more and coercivity of 1114 kA/m (14 kOe) or more, for instance, rare earth magnets such as Nd—Fe—B magnets, Sm—Co magnets, Sm—Fe—N magnets, etc. Examples of magnets having a residual magnetic flux density of less than 1.1 T include ferrite magnets such as Ba-ferrite magnets, Sr-ferrite magnets, ferrite magnets containing La and Co, and rare earth magnets such as Sm—Co magnets, Sm—Fe—N magnets. Nd—Fe—B magnets having a high residual magnetic flux density are particularly preferable from the aspects of productivity and production cost. The permanent magnets are not limited to sintered magnets but may be bonded magnets. Though it has been difficult to use Nd—Fe—B magnets for conventional heat-treating furnaces because of low heat resistance, it has become possible to use them by providing the cooling means between the heat treatment apparatus and the magnetic-field-generating apparatus.\n\n[0057]Investigation has been conducted on the desirable number of permanent magnet segments for stabilizing magnetic field strength, magnetic field uniformity and magnetic field parallelness.\n\n(a) Uniformity of Magnetic Field\n\n[0058]The uniformity of a magnetic field is represented by (Tmax−Tmin)/Tmax, wherein Tmax is the maximum magnetic flux density, and Tmin is the minimum magnetic flux density. The uniformity of a magnetic field in a region of 120 mm in diameter from the center of the magnetic circuit hole and 150 mm from an axial center is shown in FIG. 8. In FIG. 8, the axis of ordinates indicates the uniformity of a magnetic field, and the axis of abscissas indicates the number of segments. In FIG. 8, the types A and B respectively are as shown in FIG. 6. It is clear from FIG. 8 that the uniformity of a magnetic field is not affected by how the magnetic circuit is divided, namely the difference in the types A and B, and that more uniformity is not expected by increasing the number of division to 12 or more.\n\n(b) Magnetic Field Strength at Center\n\n[0059]The magnetic field strength at a center is determined for a magnetic flux density at an axial center of the center hole in a main magnetic-field-generating direction. The main magnetic-field-generating direction is the direction of a magnetic field generated in the center hole of a magnetic circuit as shown in FIG. 1. FIG. 9 shows the relation between a center magnetic field strength (T) and the number of segments. A ratio to the center magnetic field strength when the magnet is divided to 20 is shown by the dotted line in FIG. 9. It is clear from FIG. 9 that though the center magnetic field strength gradually increases as the number of segments increases, it substantially levels off at 12 or more of division. As shown by the dotted line, the ratio of a center magnetic field relative to when the magnet is divided to 20 is within about 3% when the number of division is 12.\n\n(c) Magnetic Field Parallelness\n\n[0060]The magnetic field parallelness (deviating angle or skew angle) is defined as the maximum deviating angle of a magnetic field-applying direction in an entire evaluation region corresponding to an installation site of a work to be treated. FIG. 10 shows the relation between the maximum skew angle and the number of segments. It is clear from FIG. 10 that the maximum magnetic field parallelness decreases as the number of segments increases, and that it becomes substantially constant without further decrease when the number of division is 12 or more.\n\n[0061]Though a region with a small skew angle (good magnetic field parallelness) generally increases in the cylindrical hole in proportion to the longitudinal length of the magnetic-field-generating apparatus, the weight of permanent magnets used also increases, resulting in increase in the weight of the magnetic-field-generating apparatus and a higher production cost.\n\n[0062]In addition to the above evaluation, evaluation from the viewpoints of production and economy is needed. The larger the number of permanent magnet segments, the more complicated assembling and the more types of permanent magnets needed, resulting in higher cost.\n\n[0063]In view of the above, in the magnetic-field-generating apparatus of the present invention, the number N of permanent magnet segments is properly 8 to 20, desirably 10 to 16, most desirably 12.\n\n[0064]FIG. 11 shows an example, in which there are gaps between permanent magnet segments. This example is mainly based on the consideration of the easiness of production and assembling of permanent magnet segments and cost, etc. Particularly when the permanent magnet segments are in a rectangular shape, it is easy and inexpensive to produce the entire magnetic-field-generating apparatus. In FIG. 11 (a), rectangular permanent magnet segments of the same shape are arranged with predetermined gaps, and an angle between the magnetization directions of the adjacent permanent magnet segments is deviated from the basic phase angle θ as described above. The magnetization directions of permanent magnet segments SR2, SR4, SR6 and SR8 are changed at an angle Ψ of 5°. Though the number of segments is 8 here, more segments may of course be arranged. Because the permanent magnet segments are not in a trapezoidal or fan shape, gaps are needed between the permanent magnet segments as shown in this figure, to generate a uniform, parallel magnetic field in the hole by their circular arrangement. Though gaps may be eliminated, the center hole has a small inner diameter as shown in FIG. 11(b) in that case, resulting in a proportionally small region of a uniform, parallel magnetic field. However, such example is an effective means to treat, for instance, small-diameter wafers.\n\n[0065]The magnetic-field-generating apparatus of the present invention will be explained referring to Examples below.\n\nEXAMPLE 1\n\n[0066]The magnetic-field-generating apparatus of the present invention was used for a furnace for heat treatment in a magnetic field (simply “heat-treating-in-magnetic-field furnace”) shown in FIG. 12. The heat treatment in a magnetic field may be called “annealing.”\n\n[0067]The magnetic-field-generating apparatus 10 comprises 12 equal-sized magnetic segments as shown in FIG. 1. Every permanent magnet of each segment was formed by a sintered Nd—Fe—B magnet having a residual magnetic flux density of 1.45 T and coercivity of 1192 kA/m. The ring-shaped, magnetic-field-generating apparatus 10 is formed by circumferentially arranging 12 fan-shaped permanent magnet segments S1 to S12 having three types of magnetization anisotropy. Because the fan-shaped permanent magnet segments S1 to S112 have the same shape, their center angle is 30°, and their basic phase angle θ is 60°. Because of three types of segments, many types of permanent magnets having different magnetic field orientations need not be used. Each permanent magnet segment may be trapezoidal or rectangular instead of fan-shaped. Because it is difficult to constit', '发明领域 \n\n [0001] 技术领域本发明涉及一种装置,其包括:多个永磁体,该多个永磁体以环形的方式布置,该永磁体具有中心孔,使得其磁化方向连续地改变以在孔中产生均匀的平行磁场。 磁场产生装置,例如,用于对具有磁场中的磁性膜的晶片进行热处理以使磁性膜沿一个方向取向的炉子,用于对烧结的永磁体和树脂粘结磁体进行磁性取向的模具,以使它们具有 压缩成型或挤压成型等过程中的磁各向异性 \n\n 发明背景 \n\n [0002] 用于在不使用励磁电流的情况下获得磁场强度的常规已知设备是Halbach型磁路。 该磁路在“ Journal of Applied Physics”(应用物理杂志),第1卷,第2期中公开。 第86卷,第11期,1999年12月1日,“应用物理学杂志”,第1卷。  1988年11月15日第10号第64页,以及日本专利2704352和3115243。 该Halbach型磁路包括多个具有不同磁化方向的永磁体段,这些永磁体段被布置为形成沿一个方向定向的合成磁场。 在多个永磁体段SB的圆柱形布置中 1  到SB 12  如图所示。 在图17中,例如,永磁体段SB 1  与下一个永磁体段SB相邻 2  具有与段SB的磁化方向成一定角度θ的磁化方向 1 然后,随后的永磁体段以相似的方式布置,以使其磁化方向相继改变,从而在磁路的中心孔中产生强,均匀,平行的磁场B。 传统上已知的Halbach型磁路具有圆柱形或矩形磁路。 \n\n [0003] 包括导电线圈或超导线圈的设备也被称为磁场源,用于产生大约1T(特斯拉)的强磁场的设备。 \n\n [0004] 将说明需要这种强而均匀的磁场的磁场产生装置,例如,以在磁场中具有磁性膜的晶片的热处理步骤为例。 \n\n [0005] 磁阻(MR)头,巨磁阻(GMR)头,磁随机存取存储器(MRAM)等通常具有其中多个铁磁膜层压在基板上的结构。 例如,GMR头具有在铁磁膜之间包括非磁性绝缘膜的结构。  MRAM具有从基板侧开始依次包括反铁磁性膜,钉扎磁性膜,非磁性导电膜和自由磁性层的结构。 固定膜和反铁磁膜应整体具有沿一个方向定向的磁化强度。 \n\n [0006] 该取向步骤是在通过溅射或反应沉积在基板上形成膜之后立即进行的,因此需要在均匀的平行磁场中进行热处理。 通常需要施加0.5 T(特斯拉)或更大的定向磁场,而取决于固定膜或反铁磁膜的材料,则必须大于1.0 T的定向磁场。 \n\n [0007] 在美国专利No.  US 6,303,908是一种在施加定向磁场的同时对晶片进行热处理的炉。 该炉中的磁场产生装置包括电磁线圈,应向该电磁线圈提供500-800 A的大电流以产生1.0 T或更大的磁场。 因此,这种磁场产生装置使用大功率,需要安全装置和其他设施,因此产生磁场的成本较高,并且为了除去由大电流产生的热量而需要大量冷却水。 而且,由于该磁场产生装置包括铁芯和电磁线圈,因此它的重量为3至5吨以产生大的磁场,从而导致在地板上安装强度有限的场所。 此外,由于在上述结构中存在极大的漏磁通,因此,为了安全起见,除了设备空间之外,还应该存在较大的空间。 此外,设备应用铁,坡莫合金等磁性材料包裹,以防止对附近的电子设备和人体造成不利影响。 \n\n [0008] 超导线圈可以在不使用大功率的情况下产生磁场。 尽管超导线圈消耗的励磁电流少于电磁铁,但是为了保持超导性,应始终消耗液氮或氦气,从而导致较高的运行成本。 另外,在使用超导线圈的系统中,磁场的变化将超导局部地转变为正常电导率,从而导致线圈中产生热量,并且如果保持这种状态,则将破坏整个装置的超导性。 尽管超导线圈可以产生像几特斯拉到几十特斯拉一样强的磁场,但是像电磁体一样,强泄漏磁场的范围与其磁场强度成比例地扩大。 因此,它严重地遭受了像电磁体那样的磁场泄漏的问题。 \n\n [0009] JP 11-25424 A提出了一种包括永磁体的磁场施加装置。 但是,由于该设备主要用于调节磁场分布,因此它仅产生较小的磁场强度,这不适用于使用强磁场的定向设备。 \n\n [0010] 使用电磁体或超导磁体的磁路在产生均匀磁场方面似乎存在问题。 因此,认为仅使用永磁体的Halbach型磁路有望解决上述问题。 \n\n [0011] 当对具有磁阻膜的晶片进行热处理时,通常需要1.0T或更大的磁场以稳定地提高磁阻。 此外,需要均匀且平行于磁性膜的磁化方向施加磁场。 然而,使用电磁体,超导磁体或永磁体的常规磁场产生设备不能产生强,均匀,平行的磁场。 \n\n [0012] 因此,发明人已经考虑使用哈尔巴赫型磁路作为这种磁场产生装置。 但是,在这种热处理炉的磁场产生装置中使用哈尔巴赫型磁路没有先例,需要研究磁路孔中的磁场的均匀性和平行性。 \n\n [0013] 因此已经发现,由哈尔巴赫型磁路产生的磁场不一定是均匀的。 如图1中的MS所示。 例如,在图17中,磁通量在前进方向的末端处的线性受到干扰,导致不平行,这被称为“磁化弯曲”。 可以将磁场平行度(称为偏角或偏角)用作磁化弯曲程度的指标。 这表示垂直于主磁场产生方向的x分量,即,在截面(xy平面)上的磁场施加方向相对于主磁场产生方向(y方向)的偏差(度)。 在均匀的磁场区域 要求在对晶片进行取向处理的区域中该偏差尽可能小。 具体地,±2°或更大的磁场平行度对磁性膜特性产生不利影响。 \n\n [0014] 特别地,该磁场产生装置具有圆柱形的中心孔,其中,磁场的平行度随着从纵向中心分离而急剧减小。 仅在与该圆柱孔的一半或更短的长度相对应的区域中满足上述+ 2°以内的磁场平行度。 因此,磁场产生装置应具有圆柱形孔,该圆柱形孔的长度应为处理区域的两倍或更多,以确保处理足够数量的物品,从而导致更大的尺寸和更高的生产成本。 \n\n 发明目的 \n\n [0015] 因此,本发明的一个目的是提供一种装置,该装置在圆柱形孔中基本上在其整个长度上产生抑制力为1.0T或更大的均匀平行磁场。 \n\n [0016] 本发明的另一个目的是提供一种包括上述磁场产生装置的磁场定向装置,该磁场定向装置适用于在磁场中进行热处理的熔炉等,其能够以低成本,高成本安全地操作。 准确性。 \n\n 发明内容 \n\n [0017] 本发明的磁场发生装置具有:形成为具有中心孔的环状的磁路的N个永久磁铁片,N为4以上的偶数。 具有不同磁化方向的相邻永磁体段,使得其磁化方向沿着磁路的圆周方向连续变化; 相邻的永磁体片的磁化方向之间的基本磁化相位角θ为720 / N(°)。 基本环中的至少一个永磁体段的磁化方向,该基本单元是通过将环沿圆周方向除以1/4而偏离基本磁化相位角θ的,该偏移角使得均匀的磁通量沿一个直径在一个方向上流动 中心孔。 \n\n [0018] 本发明的磁场定向装置还可包括设置在磁场产生装置的孔中的热处理装置,该热处理装置包括冷却装置,加热装置以及用于保持被检物的装置。 从外部按此顺序进行热处理。 \n\n [0019] 由于环形磁路具有四个对称的四分之一,如图所示。 参照图1,可以参考右上四分之一环(在第一象限中的四分之一磁路)来解释磁路,该右四分之一环可以被称为基本单元。 该基本单元的磁化方向沿顺时针方向变化,并且其中的至少一个永磁体段的磁化方向沿顺时针方向偏离基本磁化相位角θ。 \n\n [0020] 在本发明的一个实施例中,永磁体段布置成在相邻的永磁体段之间具有预定间隙。 间隙可以填充有非磁性体。 \n\n [0021] 已经进行了研究,假设磁化弯曲现象影响磁场产生装置中的磁通相对于每个永磁体段的相对位置。 结果发现,通过使构成磁路的永磁体片的磁化方向偏离基本磁化相位角θ,可以有效地消除磁化弯曲现象。 \n\n [0022] 在第一象限中的基本单元中,最理想的是将磁化方向顺时针偏离基本相角θ的永磁体段布置成大约45°。 假设顺时针方向为正方向,则与基本磁化相位角θ的偏离度期望为+ 15°或更小。 但是,与基本磁化相位角θ的偏差优选不朝向负方向。 偏差优选为+ 1°至+ 20°,更优选为+ 5°至+ 10°,特别是大约+ 5°。 \n\n [0023] 本发明的磁场产生装置由大致环形的磁路构成。 参考图。 如图1所示,为了使磁通量沿着孔的直径方向在一个方向上流动,磁化方向在第一和第三象限中顺时针依次改变,而在第二和第四象限中逆时针依次改变。 从y-的正部分开始,最有效地抑制磁化弯曲的段在第一象限中约为45°,在第二象限中约为135°,在第三象限中约为225°,在第四象限中约为315°。 轴(纵坐标轴)。 \n\n [0024] 在本发明的磁场产生装置中,从磁场的强度,均匀性和平行性的观点出发,永久磁铁片的数量N优选为8〜20,更优选为10〜16,特别是12。 组装磁路的容易性和生产成本。 \n\n [0025] 在该磁场产生装置中,至少在大约45°处的磁场平行度(偏离角或偏斜角)在孔的大致整个轴向区域中,在距孔中心50%至70%的范围内在±1°以内。 磁路。 \n\n [0026] 另外,本发明提供一种磁场定向装置,其包括上述磁场产生装置,该磁场产生装置围绕用于产生永磁体的磁定向模具。 \n\n 附图的简要说明 \n\n [0027] 图。 附图说明图1是表示本发明的磁场产生装置的一例的结构的概略立体图。 \n\n [0028] 图。 图2是表示本发明的磁场产生装置的中心孔内的磁场分布的图。 \n\n [0029] 图。 图3是表示本发明的磁场产生装置中的永久磁铁片的一部分相角变化时的磁场平行度的变化的曲线图。 \n\n [0030] 图。 图4是表示本发明的磁场产生装置中的永久磁铁片的一部分相角变化时的磁场平行度的变化的曲线图。 \n\n [0031] 图。 图5是表示在本发明的磁场产生装置中,相对于磁化相位角θ以各种偏离角度θ偏离时的磁场平行度与轴向位置的关系的图。 \n\n [0032] 图。 图6是表示本发明的磁场产生装置中的永磁体片的配置例的图。 \n\n [0033] 图。 图7是表示本发明的磁场产生装置中的磁场平行度对轴向长度的依赖性的图。 \n\n [0034] 图。 图8是表示本发明的磁场产生装置中的磁场的均匀性与段数之间的关系的图。 \n\n [0035] 图。 图9是表示本发明的磁场产生装置中的中心磁场强度与段数之间的关系的图。 \n\n [0036] 图。 图10是表示本发明的磁场产生装置中的最大歪斜角与段数的关系的图。 \n\n [0037] 图。 11 ( a 图2是表示本发明的磁场产生装置的一例的示意图,其中永久磁铁片之间存在间隙。 \n\n [0038] 图。 11 ( b 图2是表示本发明的磁场产生装置的一例的示意图,其中,永磁体片之间没有间隙。 \n\n [0039] 图。 图12是表示使用本发明的磁场产生装置的磁场中热处理炉的一个例子的剖视图。 \n\n [0040] 图。 图13是表示在磁场中使用热处理炉的热处理工序的图。 \n\n [0041] 图。 图14是表示使用了本发明的磁场产生装置的挤压成形装置的一例的剖视图。 \n\n [0042] 图。 图15是表示挤压成形装置的成形模具组装体的放大剖视图。 \n\n [0043] 图。 图16是沿着图15中的线AA截取的截面图。  15; 和 \n\n [0044] 图。 图17是示出传统的Halbach型磁路的示例的平面图。 \n\n 具体实施方式 \n\n [0045] 下面将详细说明本发明的实施例。 \n\n [0046] 图。 图1是示出本发明的磁场产生装置的示意性透视图,其中具有不同磁化方向的永磁体段以环形形状组装以构成圆柱形的哈尔巴赫型磁路。 在此示例中,将环划分为12段,每个永磁段S 1  到S 12  永磁体M由多个永磁体M构成,这些永磁体M被组装成使得这些永磁体的合成磁场如箭头B所示指向。 \n\n [0047] 在该磁场产生装置中 1 相邻的永磁体片的磁化方向之间的磁化相位角θ由θ= 720 / N(°)决定。 因此,当永磁体段的数量N为 8 , 10 , 12 , 16 , 20 磁化相位角θ分别为90°,72°,60°,45°和36°。 这称为“基本磁化相位角”。 通过以该角度组装永磁体片段,可以获得连续变化的磁化方向,从而在中心孔C中形成均匀的磁场B。 10  平行于其直径方向,如图2所示。 1 。 然而,由于多个段之间的磁化方向的急剧变化影响中心孔中的磁场,因此实际上会发生某种程度的磁化弯曲现象。 缓冲该效果的手段是增加段的数量以减少孔中的磁变化,从而在较宽的区域中确保均匀的磁场。 换句话说,增加段数对于形成均匀磁场的宽区域是优选的。 但是,考虑到特性和生产成本,大约需要10个细分,而实际最多20个细分。 \n\n [0048] 为了在更宽的区域中获得均匀的磁场,有必要减少磁路轴向(长度)方向的磁化弯曲。 这是“增加磁场的平行度”或“减少偏斜角或偏斜角”。 最小化该值导致抑制磁化弯曲。 本发明基于以下发现:可以通过从上述基本相角改变永磁体段的磁化方向来减小磁化弯曲。 具体地,使用12分割的环形磁路的模型,已经对作为必要单元的四分之一环进行了研究。 孔中的磁场分布的计算结果在图5中示出。 2 。 该图显示了轮廓线C的磁场平行度 1 。 该分析表明,由于基本单元的外表面上的磁场平行度最小(约45°,偏角或偏斜角最大),因此磁体的磁化方向约为45°,会影响磁体的均匀性。 磁场。 \n\n [0049] 然后将解释磁场平行度。 当永磁体段S中的磁化方向从基本角变化±5°时 1 ,S 6 ,S 7 ,S 12  在图1中的环形磁路中,分别从y轴的正部分起分别以15°,165°,195°和345°的角度旋转。 如图1所示,孔中的磁场平行度沿轴向(长度)方向变化。 3 。 在图 在图3中,纵轴表示磁场平行度,横轴表示磁路的长度。 因此, 图3示出了在轴向(长度)方向上从磁路的中心垂直在±300mm的范围内的磁场平行度的变化。 \n\n [0050] 图。 图4示出了当永磁体段S中的磁化方向从基本角改变±5°的角度Ψ时,磁路的孔中的磁场平行度在轴向上的变化。 3 ,S 4 ,S 9  和S 10  分别与y轴的正角成75°,105°,255°和285°。 \n\n [0051] 同样, 图5示出了当永磁体段S中的磁化方向从基本角以-5°的角度Ψ改变为+ 15°时,磁路的孔中的磁场平行度在轴向上的变化。 2 ,S 5 ,S 8  和S 11  分别与y轴的正角成45°,135°,225°和315°。 \n\n [0052] 如这些图所示,在磁路的整个轴向上,磁场平行度可以在大约5°的1/3处保持在1°以内。 然而,如图2所示, 如图5所示,当在每个基本单元的磁路中位于大约45°的永磁体段倾斜时,在Ψ= 5°处的磁场平行度在±0.5°以内,表现出更高的增加磁场平行度的效果。 因此,可以确认,通过改变永磁体片的基本相角,可以提高磁场的平行度,并且可以抑制磁化弯曲,并且可以通过改变相角来更有效地提高磁场的平行度。 每个磁路中以大约45°排列的线段的数量。 \n\n [0053] 接下来,关于四分之一环右上方的基本单元,研究了与基本磁化强度成-5°至+ 15°的偏离角Ψ的面内磁通密度分布(对应于图2) 假设顺时针方向为正,则相位角为θ。 具体地,在磁路的整个轴向长度(±300mm)处在45°的位置处确定磁场平行度(deg)。 结果示于图3。 5 。 在图 在图5中,纵轴表示磁场平行度,横轴表示磁路的长度。 因此, 图5示出了距磁路中心超过±300mm的磁场平行度的变化。 从图2可以清楚地看出。 由图5可知,在距磁路中心300mm以上的位置,存在以1°以上的偏角θ为中心的磁场平行度为1°以上的大区域,甚至还有具有1.5°以上的磁场平行度的区域。  -5°。 在0°的偏角θ处,存在一些区域(两端的±300 mm附近),其中磁场平行度超过1°。 另一方面,在5°至10°的偏角θ处,在整个轴向区域中的磁场平行度在±1°以内。 然而,已经发现,在15°的偏离角θ处,磁场平行度超过-1°并且接近-1.5°,导致与磁场平行度的较大偏差。 偏角θ的最佳范围根据磁路的尺寸等而略有不同,但通常为0°。 [0054] 具有要偏移的相角的永磁体段是段S 2  在图1所示的基本单元中以大约45°定位。 2 。 具有要偏移的相角的其他段是段S 5  在大约135°处,段S 8  在大约225°和段S 11  在图3中所示的整个磁路中大约为315°。  1,段S 2 ,S 8  顺时针方向改变,而段S 5 ,S 11  在15°或更小的偏角Ψ内沿逆时针方向改变。 如图2所示,例如在x-y平面上可能存在段布置的类型A和B不同。 6 。 在类型B的情况下,期望在两个段S中改变相角。 2 ,S 3  大约45度排列 \n\n [0055] 众所周知,磁场的平行度还取决于磁路的轴向长度。 如图1所示。 如图7所示,磁路的轴向长度越大,平行度越好。 尽管期望约300mm或更大的轴向长度,但是更长的磁路导致重量急剧增加。 因此,期望在保持平行度的同时减小磁路的长度。 磁化相位角θ的变化不仅校正了磁化弯曲,而且还提高了磁场平行度的精度,使得可以在保持平行度与常规平行度的同时减小磁路的长度。 磁路的仅一部分可以用于定向处理,因为常规上两端的磁场平行度很差。 然而,本发明使得可以使用整个磁路。 因此,可以在同一设备中以不同的取向磁场强度处理各种载有磁性膜的晶片等,从而不必使用与不同的取向磁场强度相对应的多个设备,从而大大降低了设备成本。 \n\n [0056] 永磁体片中使用的永磁体优选是具有1.1T或更高的剩余磁通密度和1114kA / m(14kOe)或更高的矫顽力的磁体,例如稀土磁体,例如Nd-Fe-B磁体。 剩余磁通密度小于1.1 T的磁体的示例包括铁氧体磁体,例如Ba-铁氧体磁体,Sr-铁氧体磁体,包含La和Co的铁氧体磁体。  ,以及稀土磁铁,例如Sm-Co磁铁,Sm-Fe-N磁铁。 从生产率和生产成本方面来看,具有高剩余磁通密度的Nd-Fe-B磁体是特别优选的。 永磁体不限于烧结磁体,而可以是粘结磁体。 尽管由于耐热性低而难以在传统的热处理炉中使用Nd-Fe-B磁体,但是通过在热处理装置和磁场产生装置之间设置冷却装置,可以使用它们。  。 \n\n [0057] 为了稳定磁场强度,磁场均匀性和磁场平行性,已经研究了期望数量的永磁体段。 \n\n (a)磁场均匀度 \n\n [0058] 磁场的均匀性用(T 最高 T  分 )/ T 最高 ,其中T  最高 是最大磁通密度,T  分 是最小磁通密度。 在图2中示出了距磁路孔的中心直径为120mm,距轴向中心为150mm的区域中的磁场的均匀性。 8 。 在图 在图8中,纵轴表示磁场的均匀性,横轴表示段数。 在图 在图8中,类型A和B分别如图7所示。 6 。 从图2可以清楚地看出。 由图8可知,磁场的均匀性不受磁路的分割方式即种类A和种类B的不同的影响,通过将分割数增加至12以上,不能期待更高的均匀性。 \n\n (b)中心磁场强度 \n\n [0059] 针对中心孔在主磁场产生方向上的轴向中心处的磁通密度来确定中心处的磁场强度。 主磁场产生方向是如图1所示在磁路的中心孔中产生的磁场的方向。 1 。 图。 图9示出中心磁场强度(T)与段数之间的关系。 磁体被分割为时与中心磁场强度之比 20  在图2中用虚线表示。 9 。 从图2可以清楚地看出。 由图9可知,尽管中心磁场强度随着段数的增加而逐渐增加,但是在分割的12个以上时基本稳定。 如虚线所示,当分割数为12时,相对于磁体被分割为20时的中心磁场的比率在约3%以内。 \n\n (c)磁场平行度 \n\n [0060] 磁场平行度(偏角或偏角)定义为在与待处理工件的安装位置相对应的整个评估区域中磁场施加方向的最大偏角。 图。 图10示出最大歪斜角与段数之间的关系。 从图2可以清楚地看出。 由图10可知,最大磁场平行度随着分段数的增加而减小,并且当划分数为12以上时,其基本恒定而没有进一步减小。 \n\n [0061] 尽管通常与磁场产生装置的纵向长度成比例地在圆柱孔中增加具有较小的偏角(良好的磁场平行度)的区域,但是所使用的永磁体的重量也增加,导致重量增加。 磁场产生装置的制造费用高,生产成本高。 \n\n [0062] 除了上述评估之外,还需要从生产和经济角度进行评估。 永磁体段的数量越多,组装越复杂,所需的永磁体类型越多,导致成本更高。 \n\n [0063] 鉴于上述情况,在本发明的磁场产生装置中,永磁体段的数量N适当地为8至20,期望地为10至16,最期望地为12。 \n\n [0064] 图。 图11示出了示例,其中永磁体段之间存在间隙。 该示例主要基于永磁体段的制造和组装的容易程度以及成本等方面的考虑。特别是当永磁体段为矩形时,容易且廉价地产生整个磁场产生单元。 仪器。 在图 11( a ),相同形状的矩形永磁体段以预定间隙布置,并且如上所述,相邻永磁体段的磁化方向之间的角度偏离基本相角θ。 永磁体片SR的磁化方向 2 ,SR 4 ,SR 6  和SR 8  以5°的角度changed改变。 尽管此处的段数为8,但是当然可以安排更多的段。 由于永磁体段不是梯形或扇形,因此如图所示,永磁体段之间需要有间隙,以通过其圆形排列在孔中产生均匀,平行的磁场。 尽管可以消除间隙,但是中心孔具有较小的内径,如图2所示。 11 ( b 在这种情况下,会产生一定比例的均匀平行磁场区域。 但是,这样的例子是处理例如小直径晶片的有效手段。 \n\n [0065] 以下,参照实施例对本发明的磁场产生装置进行说明。 \n\n 例1 \n\n [0066] 本发明的磁场产生装置用于图1所示的磁场中的热处理炉(简称为“磁场内热处理炉”)。 12 。 磁场中的热处理可以称为“退火”。 \n\n [0067] 磁场产生装置 10  包含 12  相等大小的磁段,如图2所示。 1 。 每个分段的每个永磁体由烧结的Nd-Fe-B磁体形成,其剩余磁通密度为1.45 T,矫顽力为1192 kA / m。 环形的磁场产生装置 10  通过沿周向布置12个扇形永磁体段S而形成 1  到S 12  具有三种类型的磁化各向异性。 因为扇形的永磁片S 1  到S 112  具有相同的形状,其中心角为30°,基本相角θ为60°。 由于段的三种类型,所以不必使用具有不同磁场方向的多种类型的永磁体。 每个永磁体段可以是梯形或矩形而不是扇形。 由于难以由一个永磁体构成大的永磁体片,因此该片段由多个小永磁体构成。 尽管未示出,但是由多个永磁体段构成的磁路的外周由多个轴向分开的外框架构件(外环)保持。 每个永磁体段通过诸如螺钉的支撑构件机械地连接至外环,使得由永磁体段产生的吸引力和排斥力被外环接收。 这些段以环形整体地粘附以构成磁场产生装置 10 。 \n\n [0068] 如上所述,在磁场产生装置中以环状组装的多个永磁体片。 10  具有连续变化的磁化方向,从而合成磁通沿直径方向在中心孔中流动。 关于永磁体段S 2 ,S 5 ,S 8 ,S 11  如图1所示,磁化相位角θ为60°(如图1所示),并从环形磁路的中心分别与45°,135°,225°和315°相对应。 箭头,段S的磁化相位角θ 2 ,S 8  如黑色箭头所示顺时针改变+ 5°,并且段S的磁化相位角θ 5 ,S 11  如黑色箭头所示逆时针改变了+ 5°。 在本例中,偏角θ为5°,偏斜角在1°以内。 磁路的内径为D 0  220毫米,外径D 1  850mm,轴向长度(长度)H为600mm。 为了处理5英寸的晶片,均匀磁场区域的孔中直径应为125 mm。 这是内径D的56% 0  磁路的 \n\n [0069] 热处理装置 20  包括炉壁 3  包括不锈钢板 31  镜面内表面带有冷却装置 4  置于炉壁内 3 和电加热器 5  由碳等制成并设置在冷却装置内 4  用于加热物品A。冷却装置 4  包括冷却套 40  包括水冷管,以保持炉壁 3  在30°C或更低的温度下以保护磁场产生设备 10  从热。 冷却方式 4  除冷却套外,还可包括散热器和/或绝缘体 40 。 在这种情况下,可以在冷却套之间设置散热器等。 40  和磁场产生装置 10 。 因为物品A主要是5到8英寸的晶片,所以电加热器 5  内径可为约170至250mm。 由于预计将来会对12英寸(300毫米)的物品进行热处理,因此电加热器 5  可能具有更大的内径。 该热处理设备处于炉壁内部的真空中 3 。 这使得可以加热附近的晶片A,从而导致改善的控制并因此改善了晶片温度的均匀性,从而实现了更高的生产率。 \n\n [0070] 炉壁 3  一端被密封件密封 7  另一端用密封外螺纹密封 8  和一个密封内螺纹 9 。 炉壁的上部 3  用真空管密封 6  和一个密封外螺纹 8 。 密封内螺纹 9  有一个轴 19  配有支架 12  用于将物品A固定在炉壁内 3  基本上在中心。 \n\n [0071] 热处理架 12  其具有包括大约25个托盘的结构,该托盘用于例如支撑具有薄的磁性层的晶片,该晶片在轴向方向上间隔大约3至10mm。 托盘间隔优选与每个物品A的直径成比例。磁场产生装置 10  本发明的方法可以在宽的轴向范围内满足磁场平行度的要求,有利于大直径晶片的热处理,具有较高的生产效率。 热处理架 12  可在炉壁内的水平面内旋转 3 。 热处理架 12  优选地,使物品A旋转,使得物品A始终保持与合成磁场的方向相同。 \n\n [0072] 通过安装在热处理支架上,中,下端的热电偶测量温度 12  对电加热器的温度进行PID控制 5 。 密封部 7  有一个进气口。 在真空管的上部设有与真空泵(未图示)连接的排气口。 6 ,保持炉壁内部 3  在真空状态。 当待热处理的物品A例如是具有薄磁性层的晶片时,优选在约1×10的真空中进行热处理。  −5 -1×10  -6  Pa。进气口连接到氮气罐,以在炉壁内部提供惰性气氛 3 ,如有必要。 \n\n [0073] 热处理如下进行。 多个具有通过非磁性绝缘层层叠多个铁磁膜和反铁磁膜而构成的薄磁性层的晶片设置在热处理保持器的托盘上 12 ,并插入热处理炉 20 。 放置所有堆叠的晶片,使其中心与磁场产生装置的轴向中心基本相同 10 。 \n\n [0074] 密封后内螺纹 9  拧到密封外螺纹上 8  制作炉壁 3  气密性,炉壁内部 3  抽真空至1×10  −5 -1×10  -6  通过真空泵抽气。 \n\n [0075] 如图1中的热处理步骤所示, 参照图13,通过电加热器将炉以30℃/ min的速度加热至300℃。 5 。 冷却水供应到冷却管 4  保持磁场产生装置的外表面 10  在大约30℃下,基本上等于环境温度。 在将晶片保持在300℃的同时,用氮气吹扫炉内的空气,以免在晶片表面上形成氧化层,并且将晶片在铁磁性膜的居里温度或更高以及居里温度下退火。 反铁磁膜的Neel温度或更高,例如,在300℃±3%的温度下持续30-60分钟。 此后,在与氮气吹扫一起抽空炉的同时,炉壁的内部 3 以10℃/ min的速度冷却。 在晶片温度变为150℃以下时,将晶片从炉中取出。 为了使晶片上的磁性膜表现出足够的特性,上述的热处理应长时间进行。 因此,如果通过一个热处理步骤处理的晶片数量增加,则该设备将表现出改善的处理能力,从而导致降低的生产成本并因此提高了生产率。 \n\n [0076] 如果在冷却晶片期间沿一个方向施加均匀的磁场,即当晶片通过居里温度和尼尔温度时,尽管磁性膜不会受到磁性的影响,但磁性膜将沿该方向磁性取向。 在较低的温度下。 因此,即使从一开始就在孔中存在磁场,在晶片上的磁性膜上也不会有实质性的问题。 \n\n [0077] 如果热处理后的晶圆直径为5英寸(125毫米),则加热器 5  应厚至5毫米,炉壁 3  内径应为170毫米,以确保晶片的外围与炉壁之间的间隙为17.5毫米 3 。 炉壁厚10毫米 3 ,且各部件之间的总间隙为5mm,内径D 0  磁路的最大长度应为200 mm以上。 对于具有1.45T的剩余磁通密度Br的永磁体,磁场产生装置应具有外径D 1  中心孔中的磁场强度超过1.4 T时,直径850 mm以上。 另外,磁场产生装置的轴向长度H应为600mm以上。 为了具有足够的机械强度,外圈的厚度应达到30 mm或更大,并且磁场产生装置的最终外径应为D 1  约910毫米 \n\n [0078] 调节上述磁化相位角θ进一步增加了磁场平行度。 虽然通常使磁场平行度在1°以内的轴向长度小到约450mm,但是在该示例中,在基本整个600mm的轴向区域中磁场平行度在1°以内。 可以使用,因此从生产效率方面来看非常有利。 \n\n [0079] 即使在端部的取向磁场强度不足的磁场产生装置中,也可以使用孔的整个区域,例如,包括轴向中心的450mm部分可用于可取向的薄膜。 强磁场,上下两部分总计150毫米,可用于在弱磁场中取向的薄膜。 这样的使用使得可以通过一个设备处理多种类型的晶片,从而降低了生产成本,并且为磁场中的热处理设备提供了多种功能,提高了生产效率,并减少了安装设备的数量,从而降低了成本。 总生产成本。 \n\n 例子2 \n\n [0080] 在该实施例中,本发明的磁场产生装置用于挤压成型永磁体的装置中。 \n\n [0081] 图。 图14示出了本发明的用于在磁场中挤压成型的设备的一个示例。 类似于示例1,磁场产生设备 10  包括十二个分开的磁路,每个部分由多个烧结的Nd-Fe-B永磁体构成,其剩余磁通密度为1.45T,矫顽力为1192 kA / m。 磁路的内径为D 0  220毫米,外径D 1  850mm,轴向长度(长度)H为600mm。 \n\n [0082] 将主要包含磁体粉末(例如Nd-Fe-B稀土磁体粉末)和热塑性树脂(例如聚酰胺树脂)的原材料混合物进行热混合,并在磁场中进行挤出成型。 将该生坯沿各向异性方向磁化以获得各向异性挤出成型体。 在图1所示的挤压成型设备中,  14,双螺杆挤出机 61 包括一个复数个桶 63  有一个漏斗 62  一端有两个螺丝 64  (图14中仅显示了一个螺钉) 63 ,以及一个适配器 65  安装在枪管的尖端 63 。 成型模具组件 66  连接到适配器的插座 65 ,以及磁场产生装置 10  围绕成型模具组件布置 66 。 \n\n [0083] 图。 图15表示取向部中的挤压成型装置的详细剖面图。 图16示出了沿图15中的线AA截取的截面。 15 。 在图中,白色箭头表示磁场的方向。 绿色的身体 67  通过模具形成所需的形状 66 a  在成型模具中 66 ,通过冷却方式冷却 66 b 。 磁场产生装置中的取向区域应靠近冷却装置的出口延伸。 66 b 。 虽然在模具中进行定向 66 a  在高温下,生坯之间的摩擦 67  和模具组装 66 冷却装置从中流过,会干扰生坯的方向 67  因此,为了纠正生坯表面上的定向干扰,重要的是使生坯均匀地定向 67  直到冷却装置的出口 66 b ,绿色的身体 67  如此冷却以至于没有方向干扰。 中心 10 a  产生磁场的装置 10  与模具的中心位置对齐 66 a 和距冷却装置出口端的距离t 66 b  成型模具的组装 66  到有效磁场区域 10 b  产生磁场的装置 10  是15毫米 因为绿色的身体 67  在挤压过程中沿着型腔表面滑动,它在表面上具有受干扰的方向,并且在有效磁场区域之外无法轻松纠正表面取向干扰 10 b 。 虽然绿色的身体是理想的 67  在磁场区域完全冷却 66 a ,可以在不降低生坯方向的情况下进行成型 67  当距离t相对于凝固速度为2mm至30mm时。 另外,绿色的身体 67 从成型模具组件中挤出后,特别是大约1毫米的薄生坯,很可能立即变形 66 通过从磁场发生装置泄漏的磁通 10 。 因此,磁屏蔽装置 10 c  被有效地布置在磁场产生装置周围 10 。 \n\n [0084] 具体地,如下获得了沿厚度方向取向的扁平,薄的各向异性粘结磁体。 首先,将包含32.5质量%的Nd,3.0质量%的Dy和1.05质量%的B(剩余部分基本上为Fe)的合金高频熔融,带铸并粗粉碎。 吸氢和脱氢后,将该粗粉进一步粉碎至500μm以下。 将该粉末与0.05质量%至0.10质量%的石蜡蜡混合,并在0.69MPa(7kgf / cm 2的压力)下通过包含氮气作为粉碎介质的喷射磨进行精细粉碎。 2 )。 所得合金粉末的平均粒径为4.2μm。 \n\n [0085] 将93质量%的合金粉末与2.0质量%的乙烯-乙酸乙烯酯共聚物(EVA),1.5质量%的聚乙烯(PE)和3.5质量%的石蜡(PW)混合作为热塑性粘合剂 。 所得材料 70  被引入枪管 63  通过料斗 62 ,输送到成型模具组件 66  在150至230°C的温度下处于熔融状态,同时通过一对螺杆的旋转被剪切 64 ,并穿过成型模具组件中的成型空间 66  而其横截面在磁场中减小到预定面积。 绿色的身体 67 将其从模具中挤出,在模具出口附近具有各向异性,然后从磁场产生装置中排出 10 。 以1-2cm / s的挤出速度,15mm的非取向区域进行成型。 挤压成型的初级生坯是具有1.0mm的厚度和10.0mm的宽度的薄板。 将该原始生坯冲压成每个7 mm的薄生坯。 该薄的生坯被表面粗糙度Ra为10μm,厚度为2.0mm的BN板夹在中间,并放置在炉中。  BN板在生坯上的压力为51.0 Pa(0.52 gf / cm 2 ),因为BN板的重量。 在生坯附近配置50g作为吸氧剂的Nd-Fe-B磁铁粉末。 之后,将该生坯在氢气中以20℃/ h的升温速度加热至615℃以进行脱脂。 将生坯在Ar中以200℃/ h的升温速度加热至1100℃以进行烧结。 \n\n [0086] 本发明提供一种磁场产生装置,其具有在磁场的强度,均匀性和平行性上稳定的宽区域,特别是具有优异的磁场平行性并且抑制了孔中的磁化弯曲。 本发明的磁场产生设备可以产生高达1.0T或更大的均匀的平行磁场。 \n\n [0087] 使用本发明的磁场产生装置的磁场热处理炉可以对磁膜弯曲等抑制磁性膜基板等多个物品施加均匀且平行的磁场,因此可以进行高品质的加工。 低成本的热处理。 \n\n [0088] 使用本发明的磁场产生装置的挤出机还可以对磁粉弯曲抑制得到抑制的磁铁粉末/树脂混合物等物品施加均匀的平行磁场,从而可以制造磁化取向高的高品质的永久磁铁。  。');
INSERT INTO `os_patent_instruction_text` VALUES (13017, 22846, '【技術分野】\n\n【0001】\n\n本発明は、希土類焼結磁石の製造方法に関し、特に希土類合金粉末の成形体を焼結する工程を含む製造方法に関する。\n\n【背景技術】\n\n【0002】\n\n希土類焼結磁石は、合金インゴットを粉砕して形成した合金粉末を磁界中でプレス成形した後、焼結工程および時効工程を経て作製される。希土類焼結磁石の中でも、ネオジム·鉄·ボロン系磁石(以下、「R-T-(M)-B系磁石」と称する。RはYを含む希土類元素、TはFeまたはFeとCoとの混合物、Mは添加元素、Bはボロンである。)は、最も高い磁気エネルギー積を示し、価格も比較的安いため、各種電子機器へ積極的に採用されている。しかし、ネオジムなどの希土類元素は非常に酸化しやすいため、製造過程で酸化を抑えるような注意が必要である。\n\n【0003】\n\nこのような希土類元素の酸化は、焼結工程などの高温処理中に特に生じやすく、酸化が生じると、最終的に得られる磁石特性が大幅に低下してしまう。焼結工程時の酸化を避けるため、通常、磁石粉末の成形体は焼結用のケース内に格納された状態で焼結炉内に搬送される。また、焼結炉の内部は不活性ガスで満たされ、焼結処理は不活性ガス中に実行される。このような焼結方法は、例えば特許文献1に開示されている。\n\n【特許文献1】特開2000-315611号公報\n\n【特許文献2】特開平5-171217号公報\n\n【特許文献3】特開平6-145711号公報\n\n【発明の開示】\n\n【発明が解決しようとする課題】\n\n【0004】\n\n従来の焼結方法では、焼結磁石の酸化をある程度抑制することはできるが、焼結用ケース内に配置した位置によって焼結磁石の特性が著しく劣化することがわかった。本発明者らは、その原因を調べたところ、一部の焼結磁石の表面が炭化していることがわかった。炭素(C)は、焼結炉内にカーボンヒータやカーボン製の断熱材が存在しているため、それらに由来している可能性がある。また、焼結ケースの底部には、搬送用ローラと接する部分にカーボン材料が用いられることがあるため、このようなカーボン材料が搬送中にローラ摩擦し、微量のカーボン粉を発生させている可能性もある。\n\n【0005】\n\n微量のカーボン粉などが焼結炉内において高温に晒されると、雰囲気中に僅かに混入した水分や酸素と反応してCOやCO2に変化する。焼結ケースを完全な密閉状態にすることは困難であり、焼結ケースには僅かの隙間が存在している。この隙間を通して雰囲気ガスの出入りが生じるとき、上記のCOやCO2が焼結ケース内の隙間に近い位置に配置されたプレス成形体と接触し、磁石粉末中の希土類元素と化学的に反応(炭化)するものと推定される。\n\n【0006】\n\n焼結炉内部からヒータや断熱材などのカーボン部材を完全に除去することは、他に好ましい代替材料が無いため、困難であり、経済的ではない。したがって、従来、炭化した一部の焼結磁石は完成品から排除し、良品だけを出荷する必要があり、歩留まりが低下してしまっていた。\n\n【0007】\n\n一方、炭素のゲッタリング材料として、Tiが有効に機能することが知られている(特許文献2および特許文献3)。しかし、これらの技術は、Tiから形成した容器内に希土類磁石粉末の成形体を配置して焼結を行なうものであるため、複数回の焼結工程を行なうと、炭化によって容器自体が劣化したり、熱変形するため、継続的な使用を続けられないという問題がある。\n\n【0008】\n\n本発明はかかる諸点に鑑みてなされたものであり、その主な目的は、簡便な方法によって焼結工程時における炭化を抑制し、性能の高い希土類焼結磁石を歩留まり良く製造する方法を提供することにある。\n\n【課題を解決するための手段】\n\n【0009】\n\n本発明による希土類焼結磁石の製造方法は、希土類磁石粉末の成形体を焼結ケースの内部に挿入する工程(A)と、前記焼結ケースを焼結炉に挿入する工程(B)と、前記焼結炉の内部で前記成形体を焼結する工程(C)とを含む希土類焼結磁石の製造方法であって、前記工程(C)において、炭素と結合する金属の箔が少なくとも1つ前記焼結ケースの内部に配置されている。\n\n【0010】\n\n好ましい実施形態において、前記工程(A)は、前記希土類磁石粉末の成形体を焼結する工程に用いられた回数が3回以下である前記金属の箔を前記焼結ケースの内部に配置する工程を有する。\n\n【0011】\n\n好ましい実施形態において、前記金属はTiを主成分として含有している。\n\n【0012】\n\n好ましい実施形態において、前記金属の箔は、折り曲げ部または凸部を有している。\n\n【0013】\n\n好ましい実施形態において、前記焼結ケースは、開口部を有するケース本体と、前記ケース本体の開口部を開閉するドア部材と、前記ケース本体の内部に固定されており、前記成形体を載せた焼結プレートを水平方向にスライドさせることができる支持手段とを備え、少なくとも前記ケース本体および前記ドア部材がモリブデンから形成されている。\n\n【0014】\n\n好ましい実施形態において、前記ケース本体は、底板と、前記底板に連結された一対の側板と、前記底板に対向するように前記一対の側板に連結された天板とを有し、前記ドア部材は、前記一対の側板の端部に設けられた案内部材によって、前記底板に垂直な方向にスライドし得る。\n\n【0015】\n\n好ましい実施形態において、前記成形体を前記焼結プレート上に載せる工程と、前記成形体を載せた状態の前記焼結プレートを前記焼結ケースの開口部を介して前記焼結ケース\n\nの内部に挿入する工程と、前記焼結ケースの開口部を前記ドア部材によって閉じる工程とを包含する。\n\n【発明の効果】\n\n【0016】\n\n炭素と結合する金属の箔が焼結ケース内に侵入してきた雰囲気ガス中の炭素をゲッタリングするため、炭化による希土類焼結磁石の歩留まり低下を抑制し、優れた磁石性能を有する希土類焼結磁石を安価に供給することが可能になる。\n\n【発明を実施するための最良の形態】\n\n【0017】\n\n本発明では、焼結ケースを用いて希土類磁石粉末の成形体を焼結する工程において、希土類磁石中に含まれるNdなどの希土類元素よりも炭素と結合しやすく、かつ高温(焼結温度程度)でも揮発しにくい安定な炭化物を作る金属の箔をゲッタリング材として用いる。このような炭素のゲッタリングに特に適した金属はTiである。本発明の好ましい形態では、Tiの箔(例えば厚さ  0.1〜0.5mm、サイズ:50mm×50mm)をゲッタリング材として用いる。Tiの粉末ではなく、Tiの箔を用いることにより、取り扱いが容易になり、古くなったTi箔を新しいTi箔と交換することもしやすくなる。\n\n【0018】\n\n本発明の製造方法に好適に用いられるTi箔の形状例を、図1〜図3に示す。図1(a)は、複数の凹部を表面に形成するようにプレス加工したTi箔40の上面図であり、図1(b)は、そのB-B線断面図である。図1(b)からわかるように、Ti箔40の裏面には複数の凸部41が存在する。このため、Ti箔40を焼結ケース内に配置したとき、これらの凸部41によってTi箔40が支持されるため、Ti箔40が雰囲気ガスと接触する表面積を広く確保できる。その結果、小型(重さ1.0〜1.5g)のTi箔40を用いても高いゲッタリング効果を得ることが可能になり、またTi箔40を作業者が指その他の治具でハンドリングすることが容易になる。\n\n【0019】\n\n図2(a)は、他のTi箔42を示す平面図であり、図2(b)は、そのB-B線断面図である。このTi箔42は、断面が蛇行するように屈曲しており、それによって雰囲気ガスとの接触面積が確保されている。\n\n【0020】\n\n図3(a)は、更に他のTi箔44を示す平面図であり、図3(b)は、そのB-B線断面図である。このTi箔44は、二つ折りに折り曲げられており、占有面積に比べて雰囲気ガスとの接触面積が拡大されている。折り曲げの回数は、更に多くても良い。\n\n【0021】\n\n炭素のゲッタリングに用いられる金属箔の形状は、上記のものに限定されず、種々の形態をとることが許容される。\n\n【0022】\n\n以下、本発明の実施形態を図面に基づいて説明する。\n\n【0023】\n\nまず、本実施形態に好適に用いられる焼結ケースの構成を説明する。なお、本発明に用いられる焼結ケースの構成は、以下に述べるものに限定されず、焼結工程中に雰囲気ガスがケース内部に侵入しえるものであれば、本発明の効果が発揮される。\n\n【0024】\n\n図4は、このような焼結ケースを模式的に示した斜視図である。図5(a)は、焼結ケースの上面を示し、図5(b)は、その側面を示している。以下、図5(a)および(b)を参照しながら、本発明による焼結ケースを説明する。\n\n【0025】\n\n図4および図5に示されている焼結ケースの本体フレーム1は、モリブデン製の薄い金属板(厚さ:1〜3mm程度)から構成されている。本体フレーム1は、対向する二つの側面部分が開口部となる箱状の容器(箱体)であり、底板2a、天板2bおよび一対の側\n\n板2cから構成されている。本体フレーム1の二つの開口部は、それぞれ、上下方向にスライドする2枚の側面板(ドア板)3aおよび3bで閉じられる。本体フレーム1の大きさの一例は、幅350mm×奥行き550mm×高さ550mmである。\n\n【0026】\n\n本体フレーム1の側板2cには、図5(a)および(b)に示すように、薄いモリブデン製金属板の強度を高める部材としてモリブデン製補強チャネル4および4’が取り付けられており、本体フレーム1に歪みが生じることを防止している。\n\n【0027】\n\n補強チャネル4’は、ドア板3aおよび3bの上下方向スライドを案内し、かつ、ドア板3aおよび3bを閉じたときの密閉度を高めるために、図5(a)に示すような逆コの字状部分を有している。これに応じてドア板3aおよび3bの側端部は直角に折り曲げられ、折り曲げられた部分が補強チャネル4’の逆コの字部分と側板2cとが作る空間内に収められるようになっている。\n\n【0028】\n\n本体フレーム1の内部10には、水平方向に延びる複数本のモリブデン製ロッド(太さ:φ6〜φ14mm程度)6が設けられており、各ロッド6は対向する二つの側板2cによって支持されている。ロッド6は、プレス成形体80が載せられた状態のモリブデン製焼結プレート(厚さ:0.5〜3mm)7を本体フレーム1内で水平に支持するように配列されている。ロッド6の間隔は、例えば、水平方向に40〜80mm程度、垂直方向に30〜80mm程度に設定されている。なお、ロッド6の両端はナット(不図示)で補強チャネル4にねじどめされている。\n\n【0029】\n\n本実施形態では、本体フレーム1のドア板3aを上方向に開放した状態で、プレス成形体を載せた焼結プレート7を側方の開口部から内部10へと挿入する。その際、焼結プレート7はロッド6上を水平方向にスライドするが、両者はともに自己潤滑性の高いモリブデンから形成されているため、発生する摩擦力も小さく、摩耗もほとんど生じない。このように側面に開放可能な開口部を設けたことによって、ロボット等の自動化装置を用いてプレス成形体を焼結ケース内に搭載することが容易になるとともに、時効処理の前に焼結ケースから焼結体を取り出す必要も無くなる。\n\n【0030】\n\n本実施形態で用いる焼結プレート7は、前述のように、他の部材と同様にモリブデンから形成されており、その先端部70は、図5(b)に示すように、上方に僅かに(傾斜角:20〜40°程度)曲げられた形状を有している。これは、図5(b)の左方から焼結プレート7を右方向にスライドさせるとき、焼結プレート7の先端がロッド6に衝突することなく、スムーズに挿入できるようにするためである。\n\n【0031】\n\nドア板3aおよび3bの上端部30は、図5(b)に示すように屈曲しており、ドア板3aおよび3bを閉じたとき、天板2bとドア板3aおよび3bとの間でガスの流出入が生じにくくなっている。また、底板2aのドア板側端部20も直角に折り曲げられており、閉じた状態のドア板3aおよび3bと底板2aとの間に隙間が形成されにくくなっている。これらの構成は、ドア板3aおよび3bを閉じたときの焼結ケースの密閉度を高めるために採用している。\n\n【0032】\n\nなお、本体フレーム1の底板部分には、焼結炉内での搬送をし易くするという目的のため、不図示のカーボン製またはカーボンコンポジット製トレイが取り付けられることが好ましい。この取り付けは、例えばトレイから突出するピンによって本体フレーム1をトレイ上に固定して行われ得る。このようなカーボンを含有する材料を用いると、後述する焼結炉内を搬送する過程で炭素ガスを発生しやすい。このため、焼結ケースの隙間から焼結ケースの内部に流入するガス中の炭素濃度が上昇しやすい。\n\n【0033】\n\n[製造方法]\n\n以下に、本発明による希土類焼結磁石の製造方法の実施形態として、ボイスコイルモータ(VCM)用焼結磁石を製造する場合を例として説明する。\n\n【0034】\n\nまず、公知の方法を用いて形成した希土類磁石の粉末を用意する。本実施形態では、R-T-(M)-B系磁石を製造するために、まず、ストリップキャスト法を用いてR-T-(M)-B系合金の鋳片を作製する。ストリップキャスト法は、例えば米国特許第5,383,978号に開示されている。具体的には、Nd:30wt%、B:1.0wt%、Al:0.2wt%、Co:0.9wt%、残部Feおよび不可避不純物からなる組成の合金を高周波溶解によって溶融し、合金溶湯を形成する。この合金溶湯を1350℃に保持した後、単ロール法によって、合金溶湯を急冷し、厚さ0.3mmのフレーク状合金鋳塊を得る。このときの急冷条件は、例えば、ロール周速度約1m/秒、冷却速度500℃/秒、過冷度200℃である。\n\n【0035】\n\nこのフレーク状合金鋳塊を水素吸蔵法によって粗粉砕した後、ジェットミルを用いて窒素ガス雰囲気中で微粉砕すれば、平均粒径が2〜5μm(好ましくは約3.5μm)の合金粉末を得ることができる。\n\n【0036】\n\nこうして得た合金粉末に対して、ロッキングミキサー内で潤滑剤を0.3wt%添加·混合し、潤滑剤で合金粉末粒子の表面を被覆する。潤滑剤としては、脂肪酸エステルを石油系溶剤で希釈したものを用いることが好ましい。本実施形態では、脂肪酸エステルとしてカプロン酸メチルを用い、石油系溶剤としてはイソパラフィンを好適に用いることができる。カプロン酸メチルとイソパラフィンの重量比は、例えば1:9とすればよい。\n\n【0037】\n\n次に、プレス装置を用いて上記合金粉末を圧縮成形し、それによって所定形状のプレス成形体(サイズ:例えば80mm×40mm×10mm)を作製する。成形体の密度は、例えば4.3g/cm3程度に設定される。プレス装置によってプレス成形体を作製した後、そのプレス成形体を焼結プレート7に搭載する。このとき、ひとつの焼結プレート7上に複数個のプレス成形体を載せることができる。\n\n【0038】\n\n次に、ドア板3aを上方向にスライドさせ、本体1の開口部を開放した状態にある焼結ケースの内部に、プレス成形体を搭載した焼結プレート7を何枚か挿入する。その後、焼結ケースの内部にTi箔をゲッタリング材として配置する。Ti箔としては、例えば図1に示す形状を有したものを用いる。Ti箔は、特にガスの流出入経路として予想される箇所の近傍、例えば焼結ケース本体フレーム1とドア板3aまたは3bとの間に形成される隙間の近くに配置することが好ましい。具体的には、外部から最もガスが流入しやすい部分、すなわち焼結ケースの最下層に挿入される焼結部プレート7の四隅にTi箔を配置することが好ましい。\n\n【0039】\n\nこのようなゲッタリング材としては、C(炭素)と結合することによって高温でも揮発しにくい安定な炭化物を形成する薄片状のものであれば、その材料はTiに限定されない。このような材料としては、Ti以外にもNdよりも炭素化合物生成エネルギーが小さく、炭素化合物を精製しやすいZr、Ta、Nbなどが存在するが、コストの点でTiが最も好ましい。なお、Ti箔は、焼結ケースに挿入する前の焼結プレート7上に配置しておいても良い。\n\n【0040】\n\n必要な数の焼結プレート7を焼結ケース内に挿入した後、ドア板3aを閉じ、焼結ケースをほぼ密閉状態にする。このとき、焼結ケースの内部に不活性ガスを供給し、プレス成形体が大気成分と接触することをできる限り抑制することが好ましい。焼結ケースの密閉度は完全ではないため、時間の経過に伴って、焼結ケース内部に大気成分が進入するが、\n\nプレス成形体が直接に大気に接触している場合に比較してプレス成形体の酸化反応は充分に抑えられる。\n\n【0041】\n\n上記のTi泊と多数のプレス成形体とを収納した焼結ケースを、例えば自動搬送装置に載せ、図6に示す構成の焼結炉装置50が設置されている場所まで搬送する。焼結炉装置50は、準備室51、脱バインダ室52、第1焼結室53、第2焼結室54、および冷却室55等を備えており、隣接する処理室は連結部57a〜57dを介して連結されている。連結部57a〜57dは、焼結ケースを大気に暴露することなく処理室間を移動できるように構成されている。焼結ケースは、このような焼結炉装置50内でカーボンコンポジット製トレイ(不図示)に載せられながらローラ56によって搬送され、各処理室内で停止しては、そこで必要な各処理を所定時間受けることになる。各処理はあらかじめ設定された複数のレシピから適宜選択されたレシピに従って実行される。量産性向上の観点から、各処理室で実行する処理は中央制御装置等によって統一的に制御されることが好ましい。各処理は、製造すべき希土類磁石の種類に応じて最適な公知プロセスを採用すればよい。以下、各処理工程を簡単に説明する。\n\n【0042】\n\nまず、焼結炉装置50の入り口に設けられている準備室51内に少なくとも一つの焼結ケースを挿入し、準備室51を密閉した後、酸化防止のため、雰囲気圧力が2パスカル程度になるまで準備室51内を真空引きする。次に、焼結ケースを脱バインダ室52に搬送し、そこで脱バインダ処理(温度:250〜600度、圧力:2パスカル、時間:3〜6時間)を実行する。脱バインダ処理は、磁性粉末の表面を覆っている潤滑剤(バインダ)を焼結工程の前に揮発させるために行うものである。潤滑剤は、プレス成形時における磁性粉末の配向性を改善するため、プレス成形前に磁性粉末と混合されたものであり、磁性粉末の各粒子間に存在している。脱バインダ処理時にはプレス焼結体から各種のガスが発生するが、前述のゲッタリング剤は、このようなガスの吸収剤(トラップ)としても機能する。\n\n【0043】\n\n脱バインダ処理が終了した後、焼結ケースは焼結室53または54に搬送され、そこで、1000〜1100℃の焼結処理を2〜5時間程度受ける。この後、焼結ケースは、冷却室55に搬送され、そこで焼結ケースの温度が室温程度に低下するまで冷却処理を受ける。\n\n【0044】\n\n次に、焼結ケースは焼結炉装置から出され、そのドア板3aおよび3bが上方向にスライドされ、完全に取り除かれた後、焼結ケースは時効処理炉に挿入され、通常の時効処理工程が実行されることになる。ドア板3aおよび3bの開閉は人手で実行しても、機械的に実行しても良い。時効処理は、例えば、雰囲気ガスの圧力を2パスカル程度とし、400〜600℃の温度にて3〜7時間程度のあいだ行われる。本実施形態によれば、時効処理を行うに際して、焼結ケースからプレス成形体を取り出す必要がないため、従来法に比較して作業工数を低減することができる。\n\n【0045】\n\n上記の各処理室内には同時に複数の焼結ケースが運び込まれ、そこで複数の焼結ケースが同様の処理を同時に受ける。各焼結ケース内には、例えば、200〜800個の多数のプレス成形体を搭載することが可能である。また、焼結室で焼結処理を実行している間に、既に焼結処理が終了した焼結ケースを冷却室で冷却処理する一方、やがて焼結処理を受ける焼結ケースを脱バインダ室で脱バインダ処理することができるため、各処理工程を効率的に進行されることができる。\n\n【0046】\n\n一般に、焼結処理には比較的に長い時間が必要なため、図6に示すように複数の焼結室を配置し、多数の焼結ケースに対して焼結処理を施せるようにすることが好ましい。この場合、複数の焼結室で実行する各焼結処理の内容は、焼結室毎に異なっていても良い。\n\n【0047】\n\n本実施形態によれば、炭化による磁石性能の劣化を簡単に抑制でき、希土類焼結磁石の歩留まりを安価に向上させることができるため、量産上極めて優れた効果が発揮される。特に、本実施形態では、Tiなどのゲッタリング用金属を、粉末ではなく、ハンドリングしやすい薄片形状で用いるため、取り替えが容易である。\n\n【0048】\n\n本実施形態で使用するTi箔は、数回の焼結工程を経ると、表面が炭化され、ゲッタリング能力が低下する。このため、1〜3回程度の焼結工程を経たあと、新しいTi箔と交換することが好ましい。本発明では、粉末ではなく箔状の金属を用いるため、焼結ケースへの挿入/取り出し、交換が極めて容易である。\n\n【0049】\n\nTi箔を構成するTi金属は、純度の高いTiである必要はなく、Fe、Al、および/またはMnなどの他の元素が添加されたものであっても良い。ただし、充分なゲッタリング効果を発揮させるためには、Tiの重量比率が全体の65%以上であることが好ましい。Ti以外に炭素をゲッタリングするのに好ましい金属は、Nb、Ta、Zrなどである。\n\n【0050】\n\n図7(a)および(b)は、それぞれ、本発明の実施形態に係る方法で製造された焼結磁石(実施例)と、Ti箔を使用しない従来の方法で製造された焼結磁石(比較例)を示す写真である。\n\n【0051】\n\n図7から明らかなように、実施形態に係る方法で製造された焼結磁石は、炭化せず、きれいな表面を示しており、歩留まりが高かった。これに対し、Ti箔を焼結ケース内に配置しなかった場合に得られた焼結磁石は、炭化によって一部が変形しており、磁石特性が大きく劣化していた。\n\n【0052】\n\nこのように本発明によれば、焼結炉や焼結ケースの改良を行なわなくとも、金属箔を用いるだけで、焼結工程の歩留まりを著しく向上させることが可能になる。\n\n【0053】\n\nなお、本発明の希土類焼結磁石の製造方法は、前述の組成を有する磁石に限定されず、R-T-(M)-B系磁石に広く好適に適用される。例えば、希土類元素Rとして、Y、La、Ca、Pr、Nd、Sm、Gd、Tb、Dy、Ho、Er、Tm、Luの少なくとも一種類の元素を含有する原料を用いることができる。充分な磁化を得るには、希土類元素Rのうちの50at%以上がPrまたはNdの何れかまたは両方によって占められることが好ましい。希土類元素Rが10at%以下では、α-Fe相の析出によって保磁力が低下する。また、希土類元素Rが20at%を超えると、目的とする正方晶Nd2Fe14B型化合物以外にRリッチの第2相が多く析出し、磁化が低下する。このため、希土類元素Rは全体の10〜20at%の範囲内にあることが好ましい。\n\n【0054】\n\nTは、FeおよびCoを含む遷移金属元素である。Tが67at%未満の場合、保磁力および磁化ともに低い第2相が析出するため磁気特性が劣化する。Tが85at%を超えると、α-Fe相の析出によって保磁力が低下し、角型性も低下する。このため、Tの含有量は67〜85at%の範囲内にあることが好ましい。なお、TはFeのみから構成されていても良いが、Coの添加によってキュリー温度が上昇し、耐熱性が向上する。Tの50at%以上はFeで占められることが好ましい。Feの割合が50at%を下回ると、Nd2Fe14B型化合物の飽和磁化そのものが減少するからである。\n\n【0055】\n\nBは、正方晶Nd2Fe14B型結晶構造を安定的に析出するために必須である。Bの添加量が4at%未満ではR2T17相が析出するため保磁力が低下し、減磁曲線の角型性が著しく損なわれる。またBの添加量が10at%を超えると、磁化の小さな第2相が析出\n\nしてしまう。従って、Bの含有量は4〜10at%の範囲であることが好ましい。\n\n【0056】\n\n粉末の磁気的な異方性をより高めるためには他の添加元素を付与してもよい。添加元素としては、Al、Ti、Cu、V、Cr、Ni、Ga、Zr、Nb、Mo、In、Sn、Hf、Ta、Wからなる群から選択された少なくとも1種類の元素が好適に使用され得る。このような添加元素は、全く添加されなくても良い。添加する場合は、添加量を10at%以下にすることが好ましい。添加量が10at%を超えると、強磁性ではなく第2相が析出して磁化が低下するからである。なお、磁気的に等方性の磁粉を得るには添加元素Mは不要だが、固有保磁力を高めるためにAl、Cu、Ga等を添加してもよい。\n\n【産業上の利用可能性】\n\n【0057】\n\n本発明によれば、炭化による磁石性能の劣化を簡単に抑制でき、希土類焼結磁石の歩留まりを安価に向上させることができるため、量産上極めて優れた効果が発揮される。\n\n【図面の簡単な説明】\n\n【0058】\n\n【図1】(a)は、本発明の好ましい実施形態に使用される金属箔の一例を示す上面図であり、(b)は、そのB-B線断面図である。\n\n【図2】(a)は、本発明の好ましい実施形態に使用される金属箔の他の例を示す上面図であり、(b)は、そのB-B線断面図である。\n\n【図3】(a)は、本発明の好ましい実施形態に使用される金属箔の更に他の例を示す上面図であり、(b)は、そのB-B線断面図である。\n\n【図4】本発明による焼結ケースの一実施形態を模式的に示した斜視図である。\n\n【図5】(a)は、本発明による焼結ケースの他の実施形態の上面図であり、(b)は、その側面図である。\n\n【図6】本発明による希土類焼結磁石の製造方法に好適に使用され得る焼結炉装置の構成を模式的に示す図である。\n\n【図7】(a)および(b)は、それぞれ、本発明の実施形態に係る方法で製造された焼結磁石(実施例)と、Ti箔を使用しない従来の方法で製造された焼結磁石(比較例)を示す写真である。\n\n【符号の説明】\n\n【0059】\n\n1    本体フレーム\n\n2a  底板、\n\n2b  天板\n\n2c  側板\n\n3a  側面板(ドア板)\n\n3b  側面板(ドア板)\n\n4    モリブデン製の補強チャネル\n\n4’  モリブデン製の補強チャネル\n\n6    ロッド\n\n7    焼結プレート\n\n10  焼結ケース内部\n\n20  底板2aのドア板側端部\n\n30  ドア板3aおよび3bの上端部\n\n40、42、44    Ti箔\n\n70  焼結プレートの先端部', '【技术领域】\n\n【0001】\n\n本发明涉及一种制造稀土烧结磁体的方法,更具体地涉及一种制造稀土合金粉末压块片材的方法。\n\n发明背景\n\n【0002】\n\n通过烧结过程和通过研磨合金铸锭形成的合金粉末在磁场中压制形成之后,通过烧结过程和老化步骤进行稀土烧结磁体。在稀土烧结磁体中,钕,铁,基于硼基磁体(下文中称为“R-T-(M)-B基磁体”。R是含有Y,T的稀土元素是Fe或Fe的混合物和CO。M是一个添加剂元素,B是硼。)是最高磁能产品,价格也相对较低,因此它是积极采用各种电子设备。然而,由于诸如Neoctmim的稀土元素非常容易氧化,因此必须注意抑制制造过程中的氧化。\n\n【0003】\n\n这种稀土元素的氧化特别同样在诸如烧结过程的高温处理中,并且当发生氧化时,最终获得的磁体特性显着降低。为了避免在烧结过程时氧化,磁体粉末的模塑制品通常在储存在烧结壳体中的状态下在烧结炉中传送。另外,烧结炉的内部填充有惰性气体,并且在惰性气体中进行烧结过程。例如,在专利文献1中公开了这种烧结方法。\n\n日本专利申请公开No.2000-315611\n\n日本专利申请公开号5-171217\n\n[专利文献3]日本专利申请公开号6-145711\n\n发明的描述\n\n本发明要解决的问题\n\n【0004】\n\n在传统的烧结方法中,已经发现,尽管可以在一定程度上抑制烧结磁体的氧化,但是烧结磁体的特性通过设置在烧结壳体中的位置而显着降低。本发明人表明,对本发明人的原因进行了,使得一些烧结磁体的表面被碳化。碳(C)可以在烧结炉中具有碳加热器或碳隔热材料,其可以衍生自氧化炉。另外,由于可以在烧结盒的底部使用碳材料,因此可以使用这种碳材料,因此这种碳材料可以在运输时摩擦辊,并且产生少量的碳粉。\n\n【0005】\n\n当少量碳粉在烧结炉中暴露在高温下时,它在大气中与略微混合的水分和氧气反应到CO和CO2改成。烧结案件难以使烧结案件完成,并且在烧结案件中存在轻微的间隙。当气氛气体进入时,通过该间隙,CO和CO2据估计与设置在靠近烧结壳体中的间隙的位置处的压模体接触,并在磁体粉末中与稀土元素进行化学反应(碳化)。\n\n【0006】\n\n从烧结炉内部完全除去诸如加热器和热绝缘材料的碳构件是困难的,并且不经济,因为没有其他优选的替代材料。因此,传统上,碳化的烧结磁体被排除在成品之外,并且只需要发货所需的良好产品,并且产率降低。\n\n【0007】\n\n另一方面,已知Ti有效地用作碳的吸收材料(专利文献2和专利文献3)。然而,由于通过在由Ti形成的容器中布置稀土磁体粉末的复合材料来烧结,因此进行多个烧结步骤,容器本身通过碳化劣化。持续使用的问题是不可能的继续热变形。\n\n【0008】\n\n本发明已经鉴于此类点进行,其主要目的是通过简单的方法提供抑制烧结过程时碳化的方法,并制造高性能稀土烧结磁体。即。\n\n[解决问题的手段]\n\n【0009】\n\n根据本发明的稀土烧结磁体的制造方法是将稀土磁体粉末的模制品插入烧结壳体的内部的步骤,以及将烧结盒插入烧结炉中的步骤制造稀土烧结磁体的方法,包括用于烧结烧结炉内的模塑主体的步骤(c),在步骤(c)中,至少一个与碳结合的金属箔设置在烧结壳体内。\n\n【0010】\n\n在一个优选的实施方案中,步骤(a)是将具有三次或更小的金属箔放置在烧结壳体内部烧结烧结稀土磁体粉末的模制体的次数的三次或更小的步骤。具有。\n\n【0011】\n\n在优选的实施方案中,金属含有作为主要成分的Ti。\n\n【0012】\n\n在优选实施例中,金属的箔具有弯曲或凸部。\n\n【0013】\n\n在优选实施例中,烧结壳体固定到具有开口的壳体和门构件,该门构件打开和关闭壳体的开口,以及在壳体内部形成的燃烧。可以提供支撑装置在水平方向上的板,至少壳体和门构件由钼形成。\n\n【0014】\n\n在优选实施例中,壳体具有底板和连接到底板的一对侧板,以及连接到一对侧板的顶板,以面向底板,并且门构件是可以通过设置在一对侧板的末端的引导构件在垂直于底板的方向上滑动。\n\n【0015】\n\n在优选实施例中,将模具放置在烧结板上的烧结板和装载模制体的状态的烧结板上通过烧结壳的开口来使用。\n\n插入烧结壳体的内部的步骤包括由门构件关闭烧结盒的开口的步骤。\n\n【发明效果】\n\n【0016】\n\n为了在烧结情况下侵入金属粘合到碳的金属的箔的大气气体中,抑制了稀土烧结磁铁的产率的产率,并且稀土烧结磁体具有优异的磁铁性能可以廉价地供应。\n\n实施本发明的最佳方式\n\n【0017】\n\n在本发明中,在使用烧结壳体烧结稀土磁体粉末的压块的步骤中,易于与稀土元素的碳粘合,例如稀土磁铁中的Nd,高温(关于烧结温度)然而,难以挥发的稳定碳化物制成的金属箔用作吸气材料。用于这种碳吸气的特别合适的金属是Ti。在本发明的优选形式中,使用Ti的箔(例如,厚度为0.1至0.5mm,尺寸:50mm×50mm)作为吸收材料。通过使用Ti的箔,通过使用Ti箔,它可以轻松处理并用新的Ti箔更换旧TI箔。\n\n【0018】\n\n适用于本发明的制造方法的Ti箔的形状的示例示于图1和2中。1至3。图。图1A是压制的Ti箔40的俯视图以形成表面上的多个凹槽,图1(b)是B-B线的横截面图。从图1中可以看出。如图1(b)所示,多个凸部41存在于Ti箔40的后表面上。因此,当Ti箔40设置在烧结壳体中时,由于Ti箔40由这些凸起部分41支撑,因此可以确保与大气气​​体接触的Ti箔40的表面积。结果,即使用小尺寸(重量1.0至1.5g)的Ti箔40也可以获得高吸收器效果,并且Ti箔40与工人用手指处理其他夹具处理它变得容易。\n\n【0019】\n\n图。图2A是示出另一个Ti箔42的平面图。图2(b)是BB的横截面图。 Ti箔42弯曲,使得横截面使其变成曲折,由此固定具有大气气体的接触面积。\n\n【0020】\n\n图。图3A是示出另一Ti箔44的平面图,图3A是图3(b)是B-B线的横截面图。 Ti箔44弯曲成两倍,与占用区域相比,具有大气气体的接触面积。弯曲的数量可能更多。\n\n【0021】\n\n用于吸收碳的金属箔的形状不限于上述,采用各种形式是可接受的。\n\n【0022】\n\n在下文中,将基于附图描述本发明的实施例。\n\n【0023】\n\n首先,将描述在本实施例中使用的烧结盒的配置。本发明中使用的烧结盒的构造不限于下面描述的烧结盒,并且如果大气气体可以渗透到烧结过程内部的情况下,则表现出本发明的效果。。\n\n【0024】\n\n图。图4是示意性地示出这种烧结壳体的透视图。图。图5(a)示出了烧结壳体的上表面,图5(b)示出了其侧表面。在下文中,将参考图1和图2描述根据本发明的烧结盒。图5(a)和5(b)。\n\n【0025】\n\n图1和图2中所示的烧结盒的主体框架1.图4和5由薄型(约1至3mm厚)组成,由钼制成。主体框架1是盒状容器(箱体),其中打开两个相对的侧面部分,底板2a,顶板2b和一对\n\n它由板2C组成。主体框架1的两个开口分别用两个侧面平面(门板)3a和3b封闭,其在垂直方向上滑动。主体框架1的尺寸的示例是350mm×深度550mm的宽度为350mm×高度550mm。\n\n【0026】\n\n如图1和图2所示。如图5(a)和5(b)所示,薄的钼金属板作为构件连接到薄的钼金属板上,并且主体框架附接。它防止发生扭曲。\n\n【0027】\n\n加强通道4\'引导门板3a和3b的上方向和下方向载玻片,并在门板3a和3b关闭时增加密封程度,并且在图5(a)的情况下,它有一个形状的部分。响应于此,门板3a和3b的侧端以直角弯曲,并且折叠部分存储在加强通道4\'的空间中,并且侧板2c。。\n\n【0028】\n\n主体框架1的内部10设置有沿水平方向延伸的多个钼棒(厚度:φ6至φ14mm)6,并且每个杆6由两个相对的侧板2c支撑。杆6布置成在放置压制成型体80的状态下在主体框架1中水平地支撑在主体框架1中,在钼烧结板(厚度:0.5至3mm)7中。杆6之间的距离在水平方向上设定为例如约40至80mm,沿垂直方向约30至80mm。杆6的两端是加强通道4的螺母(未示出)。\n\n【0029】\n\n在本实施例中,在主体框架1的门板3a向上打开的状态下,烧结板7放置压模体从向内10插入到内部10的侧面。此时,由于烧结板7在杆6上的水平方向上滑动,因此两者都由具有高自润滑的钼形成,因此产生的摩擦力很小并且几乎不发生。通过提供可以以这种方式释放到侧面的开口,使用诸如机器人的自动化装置和烧结壳体在老化处理之前容易将压模体与烧结盒安装在烧结盒中。它也是必要的取出烧结体。\n\n【0030】\n\n如上所述,如上所述的本实施例中使用的烧结板7由如上所述的钼形成,并且其尖端70略微(如图5B所示)倾斜角度:约20至40°)弯曲的形状。这是因为当从图1中的左侧向左滑动烧结板7时,如图5(b)所示,烧结板7的尖端可以平滑地插入而不会与杆6碰撞。\n\n【0031】\n\n门板3a和3b的上端30如图2所示弯曲。如图5B所示,当门板3a和3b关闭时,顶板2b和门板3a和3b之间的气体不太可能发生在流动之外。此外,底板2a的门板侧端20也以直角折叠,并且在门板3a和3b之间难以形成间隙,并且在关闭状态下底板2a。采用这些配置来增加门可以关闭时烧结盒的密封。\n\n【0032】\n\n另外,优选的是,碳制成的碳复合托盘(未示出)可以附接到主体框架1的底板部分,这使得易于在烧结炉中运输。例如,可以通过从托盘突出的销将主体框架1固定到托盘上来执行该附件。当使用这种含碳的碳时,在稍后描述的烧结炉中运输的过程中容易产生碳气体。因此,流入烧结壳体内部的气体中的碳浓度可能从烧结盒的间隙升高。\n\n【0033】\n\n[生产方法]\n\n在下文中,作为根据本发明的制造稀土烧结磁体的方法的实施例,将描述制造用于音圈电机(VCM)的烧结磁体的情况作为示例。\n\n【0034】\n\n首先,制备使用已知方法形成的稀土磁体的粉末。在本实施例中,为了生产R-T-(M)-B的磁体,首先,使用条带铸造方法制备R-T-(M)-B基合金的板坯。剥离铸造方法公开了例如美国专利No.5,522,517。美国专利号5,383,978。具体地,Nd:30wt%,B:1.0wt%,Al:0.2wt%,Co:0.9wt%,残留的Fe和不可避免的杂质通过高频溶解和形成合金熔融金属熔化。在1350℃下握住合金熔融金属后,通过单辊法淬灭合金熔融金属,得到厚度为0.3mm的片状合金锭。此时的淬火条件例如是约1m / s的辊外速,冷却速率为500℃/秒,以及200℃的过冷。\n\n【0035】\n\n通过储氢法大致挤压该片状合金锭,如果使用喷射磨机在氮气气氛中粉碎,则获得2至5μm(优选约3.5μm)的合金粉末。能够。\n\n【0036】\n\n对于由此获得的合金粉末,加入0.3wt%的润滑剂并在摇摆混合器中混合,并用润滑剂覆盖合金粉末颗粒的表面。作为润滑剂,优选使用具有石油溶剂的脂肪酸酯。在本实施方案中,甲基丙烯酸甲酯用作脂肪酸酯,并且异丙烷烃可以适合用作基于石油的溶剂。甲基己酸与异戊烷的重量比可以是例如1:9。\n\n【0037】\n\n接下来,使用压制装置压缩上述合金粉末,从而产生预定形状的压制成型体(例如,80mm×40mm×10mm)。模塑主体的密度例如为4.3g / cm3它设置为一定程度。在通过压机装置制造压模体之后,压模体安装在烧结板7上。此时,可以将多个压制成型放置在一个烧结板7上。\n\n【0038】\n\n接下来,向上滑动门板3a,并且若干烧结板7插入烧结壳体内,其中主体1的开口打开。此后,Ti箔设置在烧结壳体内作为吸气材料。作为Ti箔,例如,具有图1中所示形状的箔。使用图1。 Ti箔优选地放置在烧结壳体主体框架1和门板3a或3b之间形成的间隙附近,在预期的部分作为气体流动/输出途径的部分附近。具体地,优选地将从外部插入的烧结板7的四个角处的Ti箔设置到从外部容易地从外部流入的部分,即,烧结部分7插入最下层的烧结部分7烧结案例。\n\n【0039】\n\n作为这样的吸气材料,材料不限于Ti,只要它是形成稳定的碳化物的片状物,即使通过与C(碳)粘合难以挥发而难以挥发。作为这种材料,碳化合物形成能量小于Nd的碳化合物,并且存在通过碳化合物容易纯化的Zr,Ta,Nb等,但是在成本方面是最优选的。在插入烧结壳之前,Ti箔可以设置在烧结板7上。\n\n【0040】\n\n在将所需数量的烧结板7插入烧结盒之后,门板3a关闭并且烧结壳几乎是密封的。此时,优选在烧结壳体内提供惰性气体,并尽可能地抑制与大气组分接触。由于烧结盒的密封程度不完美,因此大气部件随着时间的推移进入烧结盒的内部。\n\n与压模体直接与大气接触的情况相比,压制成型体的氧化反应充分抑制。\n\n【0041】\n\n存储上述Ti夜间的烧结盒和大量的压模存储,例如,存储在自动传送装置上,并且具有图6所示配置的烧结炉装置50。6被运输到烧结炉的地方安装装置50。烧结炉装置50包括准备室51,Devoid装置52,第一烧结室53,第二烧结室54,冷却室55等,并且相邻的处理室57a至57d通过。连接部分57a至57d被配置为能够移动处理室而不将烧结盒暴露于大气。烧结盒通过辊56传送,同时将在这种烧结炉装置50中的碳复合托盘(未示出)中放置在碳复合托盘(未示出)中,并且在每个处理室中停止,并且存在预定时间的所需处理。它会收到。 Each process is performed according to the appropriate selective recipe from the plurality of recipes set in advance.从大规模生产率改进的观点来看,优选的是,在每个处理室中执行的过程由中央控制装置等均匀地控制。每个过程可以根据待制造的稀土磁铁的类型采用最佳已知方法。在下文中,将简要描述每个处理过程。\n\n【0042】\n\n首先,将至少一个烧结盒插入设置在烧结炉装置50的入口处的制备室51中,并且在密封准备室51之后,大气压约为2帕斯卡,以防止氧化。发现准备室51真空。接下来,烧结壳体被输送到Devaler腔室52,其中Dewinder工艺(温度:250至600度,压力:2 Pascals,时间:3至6小时)。进行粘合剂方法以使润滑剂(粘合剂)挥发覆盖烧结过程前面的磁性粉末表面的润滑剂(粘合剂)。在压模之前将润滑剂与磁粉混合,以便在压制成型时改善磁粉的取向,并且存在于磁粉的颗粒之间。在实施过程中,各种气体从压榨烧结体产生,但上述吸气剂也用作这种气体的吸收剂(捕集器)。\n\n【0043】\n\n在完成Demaler工艺之后,烧结壳体被传送到烧结室53或54,其中1000至1100℃的烧结过程经受约2至5小时的烧结过程。此后,烧结壳体被传送到冷却室55,在冷却室55中,在烧结壳体的温度降低至约室温之前,将冷却室55输送到冷却室55。\n\n【0044】\n\n接下来,从烧结炉装置发出烧结盒,然后将门板3a和3b向上滑动,然后将烧结盒插入老化处理炉中,并且将执行该过程的正常老化处理。门板3a和3b的打开和关闭可以通过手动或可以机械地执行。进行老化过程,例如大气氛气体的约2粒孔隙压力,并且在400至600℃的温度下进行约3至7小时。根据本实施例,由于没有必要从烧结壳体中取出压模体,因此与传统方法相比,可以减少工件的数量。\n\n【0045】\n\n同时,在每个上述处理室中的每一个中携带多个烧结情况,其中多个烧结壳体类似地进行相同的过程。在每个烧结盒中,例如,可以安装大量200至800压制成型。此外,虽然在烧结室中执行烧结过程,但是在冷却室中完成烧结过程的烧结壳体,并且在脱机器中最终进行烧结过程的烧结壳体。由于它可以受到影响对于执行过程,每个处理步骤可以有效地先进。\n\n【0046】\n\n通常,由于烧结过程需要相对长的时间,因此如图2所示布置多个烧结室。6,使得可以对大量烧结案件进行烧结过程。优选的。在这种情况下,在多个烧结腔室中执行的每个烧结过程的内容对于每个烧结室可以是不同的。\n\n【0047】\n\n根据本实施例,可以容易地抑制通过碳化磁化的劣化,并且稀土烧结磁体的产率可以廉价地提高,从而表现出非常优异的批量生产效果。特别地,在本实施例中,用于诸如Ti的气体的金属用作不容易处理的粉末形状,但易于更换。\n\n【0048】\n\n在本实施例中使用的Ti箔通过几个烧结步骤,表面被碳化,并且吸收能力降低。因此,优选在通过约1至3次的烧结步骤后更换新的Ti箔。在本发明中,由于使用箔状金属而不是粉末,插入/提取到烧结盒,并且更换非常容易。\n\n【0049】\n\n构成Ti箔的Ti金属不必是高纯度Ti,并且可以添加其他元素,例如Fe,Al和/或Mn。然而,为了施加足够的吸血效,Ti的重量比优选为总量的65%或更多。除Ti以外的吸收碳的优选金属是Nb,Ta,Zr等。\n\n【0050】\n\n图。图7(a)和7(b)分别是通过本发明的实施方案制造的烧结磁体(实施例)和通过不具有Ti箔的常规方法制造的烧结磁体(图示是表示比较例的照片。\n\n【0051】\n\n如图7所示,通过根据该实施方案的方法制造的烧结磁铁显示出没有碳化的清洁表面,产率高。另一方面,当Ti箔未设置在烧结壳体中时获得的烧结磁体,碳化的一部分变形,并且磁体特性显着降低。\n\n【0052】\n\n如上所述,根据本发明,通过使用金属箔,可以显着提高烧结过程的产率而不改善烧结炉和烧结壳体。\n\n【0053】\n\n用于制造本发明的稀土烧结磁体的方法不限于具有上述组合物的磁体,并且广泛适当地施加到R-T-(M)-B的基础磁体上。例如,含有含有Y,La,Ca,Pr,Nd,Sm,Gd,Tb,Dy,Ho,Er,Tm和Lu的至少一个元素的原料可用作稀土元素R.为了获得足够的磁化,优选的是,稀土元素R中的50个以PR或Nd的任何或两者占据。如果稀土元素R为%或更低,则通过α-Fe相的沉淀降低矫顽力。此外,当稀土元素r超过20at%时,目的2Fe.14除了B型化合物之外,R的第二阶段还大,磁化减少。因此,稀土元素R优选在整体的10至20的范围内。\n\n【0054】\n\nT是包括Fe和Co的过渡金属元素。如果T在0at%的时间下小于67,则由于矫顽力和磁化沉积物的第二相位低,因此磁性降低。当T超过85at%时,通过α-Fe阶段的沉淀降低矫顽力,并且该方案也降低。因此,优选的是,T的含量在67至85at%的范围内。尽管T是仅Fe,但是它可以由Fe组成,但是Cuie温度通过加入CO并且耐热性得到改善。优选地,T的50%以上的T被Fe占据。如果FE的百分比低于50%,ND2Fe.14这是因为B型化合物的饱和磁化强度变化。\n\n【0055】\n\nb是四方的nd2Fe.14必须稳定地沉淀B型晶体结构。如果添加的B的量小于4%2T.17由于相沉积物,矫顽力降低,并且消失曲线的大致性显着受损。而且,当B的添加量超过10at%时,沉积磁化的较小的第二阶段。\n\n导致。因此,优选的是,B的含量在4至10at%的范围内。\n\n【0056】\n\n可以提供其他添加元素以进一步增强粉末的磁各向异性。作为添加剂元素,适当使用选自Al,Ti,Cu,V,Cr,Ni,Ga,Zr,Nb,Mo,In,Sn,Hf,Ta和W.可以是完毕。这些添加剂可以根本不添加。加入添加时,添加量优选为10at%以下。当添加量超过10at%时,它不是铁磁性,而是第二相沉积物和磁化减小。为了获得磁各向同性磁粉,可以添加添加剂元素M,但可以添加Al,Cu,Ga等以增加本质矫顽力。\n\n【工业可用性】\n\n【0057】\n\n根据本发明,由于可以容易地抑制磁化磁化性能的劣化,因此可以廉价地提高稀土烧结磁体的产率,从而表现出批量生产的非常优异的效果。\n\n[简要描述;简介]\n\n【0058】\n\n【图1】(a)是表示本发明优选实施方案中使用的金属箔的一例的俯视图,(b)是B-B线的横截面图。\n\n【图2】(a)是表示本发明优选实施例中使用的金属箔的另一个例子的俯视图,(b)是BI B的横截面图。\n\n图3.(a)是显示在本发明优选实施例中使用的金属箔的又一个例子的俯视图,(b)是B-B线的横截面图。\n\n图4.图3是通过本发明示出烧结壳体的一个实施例的立体图。\n\n图5.(a)是根据本发明的烧结壳体的另一个实施方案的俯视图,并且(b)是其侧视图。\n\n6.图3是示出了根据本发明的可以适合于稀土烧结磁体的制造方法的烧结炉装置的结构的图。\n\n图7.(a)和(b)分别通过本发明实施方案的方法制造的烧结磁体(实施例)和通过不具有Ti箔的常规方法制造的烧结磁体(比较例是显示的照片)。\n\n[标志的说明]\n\n【0059】\n\n1身体框架\n\n2a底板,\n\n2B顶板\n\n2C侧板\n\n3A侧板(门板)\n\n3B侧板(门板)\n\n4钼钢筋\n\n4\'钼强化渠道\n\n6杆\n\n7烧结板\n\n10个烧结案例内部\n\n20门板2A的底板侧端\n\n30门板的上端3a和3b\n\n40,42,44吨箔\n\n烧结板70尖');
INSERT INTO `os_patent_instruction_text` VALUES (13018, 22847, 'FIELD OF THE INVENTION\n\n[0001]The present invention relates to a method of manufacturing a sintered body, in which oxygen is reduced.\n\nBACKGROUND OF THE INVENTION\n\n[0002]Powder sintering methods are classified into one with no pressurization and one with pressurization such as hot pressing and hot isostatic pressing. While the sintering method with no pressurization enables reduction of oxygen in a sintered body by virtue of performing sintering in a reducing atmosphere such as hydrogen or the like, it is thought in the powder sintering method with pressurization such as hot isostatic pressing or the like that it is difficult to remarkably reduce oxygen after sealing because powder is confined in a capsule such as metallic container or the like to be subjected to sintering, and so the method depends much upon reduction of oxygen quantity in a material powder.\n\n[0003]Recently, proposed as a method of oxygen reduction in a sintered body is, for example, a method of moving and reducing oxygen from a material being sintered, by having a getter metal, from which an oxide is formed at a sintering temperature to be lower in oxygen dissociation pressure than an oxide formed from a metallic material being sintered, existing in an inner portion of a metallic capsule in contact with the material being sintered, when hot isostatic pressing is carried out (for example, JP-A-2000-144396).\n\n[0004]JP-A-2000-144396 discloses removal of oxygen from a material being sintered, by having a getter material existing in an inner portion of a metallic container in contact with the material being sintered, to permit oxygen existing in the material being sintered to diffuse on a surface of the material being sintered, to combine with the getter material.\n\n[0005]In the case where a getter material together with a material being sintered is sealed in a metallic container in a manner to be made existent in a portion of the metallic container in contact with the material being sintered, and pressurized sintering is performed, however, effectiveness of oxygen removal caused by the getter material is liable to appear in only that surface layer portion of a sintered body, which comes into contact with the getter material, and oxygen in the sintered body cannot be adequately reduced, so that there remains a problem that it is not possible to generally evenly reduce oxygen remained in the sintered body.\n\nSUMMARY OF THE INVENTION\n\n[0006]It is an object of the invention to solve the above problem and to provide a method of manufacturing a sintered body, which method is capable of generally evenly reducing oxygen in the sintered body and remarkably improving the capacity of deoxygenation.\n\n[0007]As a result of having made various examinations into oxygen reduction methods based on the pressurized sintering method, the inventors of the present application have found that oxygen constituting impurities inevitably contained in a sintered body can be further reduced by sealing metallic powder or alloy powder and a getter material having a higher oxidation potential than that of the metallic powder or alloy powder under reduced pressure in a metallic container, expediting the deoxygenation reaction at low pressure and in a temperature range, in which deoxygenation reaction occurs, and adopting a heating and pressurizing pattern, in which main sintering is performed under a high-temperature and high-pressure condition, after the deoxygenation reaction has proceeded, and have thus reached the present invention.\n\n[0008]More specifically, the invention provides a method of manufacturing a sintered body, comprising sealing a material powder composed of metallic powder or alloy powder and a getter material having a higher oxidation potential than that of the material powder under reduced pressure in a metallic container, keeping the metallic container at pressure not higher than 50 MPa and at temperature not lower than 500° C. for 1 to 50 hours, and then sintering the material powder at pressure higher than 50 MPa and at temperature not higher than 1340° C.\n\n[0009]Further, the invention provides a method of manufacturing a sintered body, comprising sealing a material powder composed of metallic powder or alloy powder, a getter material having a higher oxidation potential than that of the material powder, and a hydride, which constitutes a hydrogen source, under reduced pressure in a metallic container, keeping the metallic container at pressure not higher than 50 MPa and at temperature not lower than 500° C. for 1 to 50 hours, and then sintering the material powder at pressure higher than 50 MPa and at temperature not higher than 1340° C.\n\n[0010]Also, it is preferable in the invention that the getter material comprises an element belonging to the IVa group or the Va group of the periodic table of the elements, and an element combining with hydrogen to form the hydride has a hydrogen dissociation temperature higher than 400° C. Also, it is desirable in the invention that a material powder having the melting point of not lower than 1600° C. be applied to the manufacture of a sintered body and it is preferable in the invention that a sintered body manufactured according to the invention be used as a sputtering target material since it contains a low content of oxygen.\n\n[0011]According to the invention, oxygen in a sintered body produced by pressurized sintering can be made generally uniform and the capacity of deoxygenation can be remarkably enhanced, so that a technique essential for manufacture of a sintered body is provided.\n\nBRIEF DESCRIPTION OF THE DRAWINGS\n\n[0012]FIG. 1 is a view showing a state of a metallic container, in which a material powder is filled, in Examples 1 to 4;\n\n[0013]FIG. 2 is a graph showing conditions of temperature and pressure in HIP of the invention in an Example 1;\n\n[0014]FIG. 3 is a graph showing conditions of temperature and pressure in HIP of a comparative sample in the Example 1;\n\n[0015]FIG. 4 is a view showing positions, at which test pieces for oxygen analysis are taken from a sintered body, in samples;\n\n[0016]FIG. 5 is a graph showing conditions of temperature and pressure in HIP of the invention in an Example 2;\n\n[0017]FIG. 6 is a graph showing conditions of temperature and pressure in HIP of a comparative sample in the Example 2;\n\n[0018]FIG. 7 is a graph showing conditions of temperature and pressure in HIP of the invention in an Example 3;\n\n[0019]FIG. 8 is a graph showing conditions of temperature and pressure in HIP of the invention in an Example 4;\n\n[0020]FIG. 9 is a graph showing conditions of temperature and pressure in HIP of a comparative sample in the Example 4; and\n\n[0021]FIG. 10 is a view showing a state of a metallic container, in which a material powder is filled, in an Example 5.\n\nDESCRIPTION OF THE PREFERRED EMBODIMENTS\n\n[0022]As described above, an important feature of the invention resides in that in manufacturing a sintered body, a material powder and a getter material having a higher oxidation potential than that of the material powder are sealed in a metallic container, and oxygen contained in the material powder is reduced to the getter material in those ranges of temperature and pressure, in which sintering of the material powder is not started, whereby the processing of deoxygenation is performed on the material powder and subsequently sintering is caused to proceed at high temperature and high pressure to realize a sintered body, in which oxygen being an impurity element is reduced.\n\n[0023]In a method of manufacturing a sintered body, according to the invention, a material powder composed of metallic powder or alloy powder and a getter material having a higher oxidation potential than that of the material powder are sealed under reduced pressure in a metallic container. In this case, while further supplying of oxygen is cut off, oxygen is present as oxygen adsorbed by interiors and surfaces of the material powder and an oxide disposed on surfaces of the material powder in the metallic container. The material powder and the getter material are sealed under reduced pressure in the metallic container, and heat treatment is applied thereon at low temperature and low pressure, at which sintering is hard to proceed and the deoxygenation reaction can proceed, in a state, in which further supplying of oxygen is cut off. In the case where heat treatment is carried out under that condition, in which sintering is hard to proceed, the material powder filled in the metallic container is put in a state, in which it is porous to leave voids therein, so that oxygen dissociates from the material powder without internally diffusing into a sintered body as compacted and mass transfers to the getter material as oxygen gases or vapor of low-valent oxide. Therefore, deoxygenation is greatly enhanced in efficiency.\n\n[0024]An effect of oxygen removal can be produced by selecting, as a getter material in the invention, a metallic element having a higher affinity for oxygen than that of an element constituting a matrix of a sintered body, that is, a metallic element having a high oxidation potential.\n\n[0025]Also, when heat treatment is applied on the material powder under that condition, in which pressure is not higher than 50 MPa and temperature is not lower than 500° C., the deoxygenation reaction can proceed without rapid expedition of sintering. Also, since the effect of deoxygenation is improved with time for heat treatment, the deoxygenation reaction preferably proceeds in 50 hours or shorter when taking account of the necessity of time not shorter than 1 hour for heat treatment, and of the efficiency of sintering.\n\n[0026]Also, according to the above condition, a sintered body is fabricated by pressurized sintering a material powder, of which surfaces are clean, after the deoxygenation reaction has proceeded adequately. In fabricating a sintered body by means of pressurized sintering, it is desirable to apply pressure not lower than 50 MPa on the metallic container. The reason for this is that when pressurized sintering is performed at pressure not higher than the above-mentioned pressure, it is hard to fabricate a sintered body having a sufficient density. Also, the temperature condition at the time of pressurized sintering must be set taking account of the heat-resisting temperature of the metallic container. In the case where a metallic container formed from a low carbon steel is used, sintering is desirably performed at temperature not higher than 1340° C. The reason for this is that when pressurized sintering is performed at temperature higher than the above-mentioned temperature, the temperature approaches the melting point of the metallic container itself and the metallic container itself melts to contaminate a resulting sintered body. Also, in order to make a sintered body high in density, it is preferable to use hot pressing and hot isostatic pressing (HIP) for pressurized sintering.\n\n[0027]Also, in the manufacturing method according to the invention, it is desired that a material powder composed of metallic powder or alloy powder, a getter material having a higher oxidation potential than that of the material powder, and a hydride, which constitutes a hydrogen source, be sealed under reduced pressure in a metallic container. The reason for this is that when heating is performed in a state, in which the hydride, which constitutes a hydrogen source, as well as the material powder and the getter material are sealed under reduced pressure in the metallic container and further supplying of oxygen is cut off, hydrogen dissociating from the hydride is believed to serve as a carrier of oxygen from the material powder to the getter material when oxygen existing in the metallic container combines with the getter material having a high oxidation potential.\n\n[0028]More specifically, oxygen present on the surfaces of the material powder is first subjected to hydrogen reduction to make H2O molecules. Then the H2O molecules move to the getter material and the H2O are reduced by the getter material to make H2. That is, it is thought that hydrogen serves as a carrier to transport oxygen of the material powder to the getter material to expedite deoxygenation further efficiently.\n\n[0029]It is desired that the hydride, which constitutes a hydrogen source, be one having the hydrogen dissociation temperature higher than 400° C. The reason for this is that since a metallic container is usually sealed under reduced pressure at around 400° C., hydrogen separates in the course of pressure reduction and is discharged outside the metallic container due to the deoxygenation processing when a hydride having the hydrogen dissociation temperature not higher than 400° C. is made use of. For example, hydrides of Ti and Zr can be used as the hydride.\n\n[0030]Also, in order to act as a getter, it is necessary for the getter material in the invention to have a higher oxidation potential than that of the material powder. Therefore, a getter material is selected according to a kind of the material powder. In the case where, for example, Mo, Mo alloy, and Ru are used as the material powder, it is conceivable that those elements belonging to the Ia to Va group of the periodic table of the elements, which have a higher oxidation potential than that of such material powder, be used as the getter material. In view of cost and the quality of handling, elements belonging to the IVa group (Ti, Zr, Hf) or the Va group (V, Nb, Ta) of the periodic table of the elements are desirable among the materials described above.\n\n[0031]Further, powder of elements having the melting point not lower than 1600° C. is desirably used as the metallic powder and the alloy powder. Since powder of the elements is in many cases manufactured by refining with the use of a chemical process and hydrogen reduction on an oxide in a final process, oxygen is left in a large amount on powder surfaces. Also, powder manufactured in the chemical process is in many cases porous one, due to which oxygen is frequently left on powder surfaces. Therefore, since there is a great need of reducing oxygen in the case where a sintered body is manufactured from powder of the elements, the method of manufacturing a sintered body, according to the invention, is preferable when a sintered body is manufactured from powder of the elements. Also, when a material of the element is to be manufactured, the sintering process is usually applied due to its high melting point, so that the manufacturing method according to the invention is preferable in such application in order to reduce oxygen in manufacture of the element.\n\n[0032]Also, since the method of manufacturing a sintered body, according to the invention, is highly effective in reduction of oxygen in a sintered body, it is preferable as a method of manufacturing a sputtering target material of low oxygen content for formation of thin film used in information industries. Also, since a sintered body subjected to pressurized sintering after the deoxygenation processing has a grain boundary in a cleaned condition, it is very useful in reducing generation of particles during sputtering. Therefore, a sintered body manufactured by the present method is especially optimum for a sputtering target material.\n\nEXAMPLE 1\n\n[0033]As shown in FIG. 1, after Mo powder being material powder 4 containing oxygen of 250 mass ppm was filled in a metallic container 1 of low carbon steel with a powder filling space having a diameter of 50 mm and a height of 250 mm, and eight Nb foil pieces having a diameter of 40 mm and a thickness of 0.1 mm, four Ta foil pieces having a diameter of 40 mm and a thickness of 0.12 mm, or Zr powder 17g were arranged as a getter material 5 on a back side of an upper lid 2 of the metallic container, the upper lid of the metallic container with a deaerating port 3 was welded to the metallic container, pressure reducing evacuation was performed through the deaerating port 3 up to 1.0×10−2 Pa or less, and sealing was effected. Also, in a comparative sample, a metallic container, in which the getter material was not arranged but the material powder was filled, was also fabricated.\n\n[0034]The metallic container fabricated thus and filled with the Mo powder was subjected to sintering under a HIP condition shown in FIG. 2.\n\n[0035]The HIP condition of the invention shown in FIG. 2 included room temperature as an initial temperature, 8 MPa as an initial pressure, and temperature-rise up to 1050° C. in first 3 hours and keeping the temperature for 4 hours. Thereafter, the pressure was increased to 146 MPa over 3 hours, the temperature was raised to 1250° C. for 3 hours since 2.5 hours out of the 3 hours had elapsed, and the temperature was kept for 3 hours as it was. Thereafter, the temperature and the pressure were decreased for termination of the HIP.\n\n[0036]Further, the metallic container filled with the Mo powder in the same manner was used and subjected to sintering under a HIP condition shown in FIG. 3, in which the initial heating and keeping were not performed, unlike the invention.\n\n[0037]The HIP condition shown in FIG. 3 included room temperature as an initial temperature, 8 MPa as an initial pressure, and temperature-rise up to 1050° C. and pressure-rise in first 3 hours and keeping the temperature and the pressure for 6.5 hours. Thereafter, the temperature was raised to 1250° C. over 0.5 hours, and was then kept for 3 hours. Thereafter, the temperature and the pressure were decreased for termination of the HIP.\n\n[0038]After the sintering had been terminated, test pieces for oxygen analysis were taken from the sintered bodies of the sample of the invention and the comparative sample at respective positions shown in FIG. 4, that is, a position A, a position B, and a position C, at 25 mm, 125 mm, and 225 mm, respectively, from the getter material, and the analysis of oxygen quantity was performed by means of the LECO method.\n\n[0039]TABLE 1 shows results of the analysis of sintered bodies in a sample 1 of the invention, in which the Nb foil pieces subjected to sintering under the HIP condition shown in FIG. 2 were used as the getter material, a sample 2 of the invention, in which the Ta foil pieces subjected to sintering in the same manner as that described above were used as the getter material, and a sample 3 of the invention, in which the Zr powder subjected to sintering in the same manner as that described above was used as the getter material, and a sintered body of the comparative sample 4 with no getter material in the metallic container.\n\n[0040]Also, TABLE 2 shows results of the analysis of sintered bodies in a comparative sample 5, in which the Nb foil pieces subjected to sintering under that HIP condition, which is shown in FIG. 3 and different from that in the invention, were used as the getter material, a comparative sample 6, in which the Ta foil pieces subjected to sintering in the same manner as that described above were used as the getter material, a comparative sample 7, in which the Zr powder subjected to sintering in the same manner as that described above was used as the getter material, and a sintered body in a comparative sample 8 with no getter material in the metallic container. Oxygen quantities in TABLE 1 and TABLE 2 are expressed in mass ppm.\n\n[0041]It is seen from TABLE 1 and TABLE 2 that sintered bodies in the samples 1, 2 and 3 of the invention, in which the getter material was arranged in the metallic container and the processing of expediting deoxidation prior to the main sintering at the time of HIP was incorporated, were adequately reduced in oxygen quantity irrespective of positions in the sintered bodies.\n\n[0042]TABLE 1SampleGetterOxygen Quantity (ppm)No.MaterialPosition APosition BPosition CNote1Nb Foil9090100Examples ofPieceinvention2Ta Foil7090100Piece3Zr Powder5070904None260270270ComparativeExample\n\n[0043]TABLE 2SampleGetterOxygen Quantity (ppm)No.MaterialPosition APosition BPosition CNote5Nb Foil100220250ComparativePieceExamples6Ta Foil80220230Piece7Zr Powder702102208None270280270\n\nEXAMPLE 2\n\n[0044]Like the Example 1, as shown in FIG. 1, after Ru material powder being material powder 4 containing oxygen of 1000 mass ppm was filled in a metallic container 1 of low carbon steel with a powder filling space having a diameter of 50 mm and a height of 250 mm, and four Ta foil pieces having a diameter of 40 mm and a thickness of 0.12 mm were arranged as a getter material 5 on a back side of an upper lid 2 of the metallic container, the upper lid of the metallic container with a deaerating port 3 was welded to the metallic container, pressure reducing evacuation was performed through the deaerating port 3 up to 1.0×10−2 Pa or less, and sealing was effected.\n\n[0045]The metallic container fabricated in the above manner and filled with the Ru material powder was subjected to sintering under a HIP condition shown in FIG. 5, and a resulting sintered body was made a sample 9 of the invention. Also, in a comparative sample, sintering was performed under a different HIP condition from that in the invention and shown in FIG. 6, and a resulting sintered body was made a comparative sample 10.\n\n[0046]The HIP condition of the invention shown in FIG. 5 included room temperature as an initial temperature, 8 MPa as an initial pressure, and temperature-rise up to 900° C. in first 3 hours and keeping the temperature for 4 hours. Thereafter, the pressure was increased to 146 MPa over 3 hours, the temperature was raised to 1300° C. over 3 hours since 2 hours out of the above 3 hours had elapsed, and the temperature was kept for 3 hours. Thereafter, the temperature and the pressure were decreased for termination of the HIP.\n\n[0047]The HIP condition of the comparative sample shown in FIG. 6 included room temperature as an initial temperature, 8 MPa as an initial pressure, and temperature-rise up to 900° C. and pressure-rise to 146 MPa in first 3 hours, and keeping the temperature and the pressure for 6 hours. Thereafter, the temperature was raised to 1300° C. over 1 hour, and the temperature was kept for 3 hours. Thereafter, the temperature and the pressure were decreased for termination of the HIP.\n\n[0048]After the sintering had been terminated, test pieces for oxygen analysis were taken from the sintered bodies of the sample 9 of the invention and the comparative sample 10 at the position A, the position B, and the position C shown in FIG. 4 in the same manner as in the Example 1, and the analysis of oxygen quantity was performed by means of the LECO method. TABLE 3 shows results of the oxygen analysis. Oxygen quantities in TABLE 3 are expressed in mass ppm. It is seen from TABLE 3 that the sintered body in the sample 9 of the invention, in which the getter material was arranged in the metallic container and the processing of expediting deoxidation prior to the main sintering at the time of HIP was incorporated, was adequately reduced in oxygen quantity irrespective of positions in the sintered body.\n\n[0049]TABLE 3SampleHIPOxygen Quantity (ppm)No.ConditionPosition APosition BPosition CNote 9FIG. 5150160160Example ofInvention10FIG. 6140300350ComparativeExample\n\nEXAMPLE 3\n\n[0050]Like the Example 1, as shown in FIG. 1, after Mo material powder being material powder 4 containing oxygen of 250 mass ppm was filled in a metallic container 1 of low carbon steel with a powder filling space having a diameter of 50 mm and a height of 250 mm, and four Ta foil pieces having a diameter of 40 mm and a thickness of 0.12 mm were arranged as a getter material 5 on a back side of an upper lid 2 of the metallic container, the upper lid of the metallic container with a deaerating port 3 was welded to the metallic container, pressure reducing evacuation was performed through the deaerating port 3 up to 1.0×10−2 Pa or less, and sealing was effected.\n\n[0051]The metallic container fabricated in the above manner and filled with the Mo material powder was subjected to heat treatment of 850° C.×20 hours in an Ar atmosphere at the atmospheric pressure, and then subjected to sintering under a HIP condition shown in FIG. 7, and a resulting sintered body was made a sample 11 of the invention. Also, in a comparative sample, heat treatment was not performed prior to HIP sintering but sintering under a HIP condition in FIG. 7 was performed, and a resulting sintered body was made a comparative sample 12.\n\n[0052]The HIP condition shown in FIG. 7 included room temperature as an initial temperature, 8 MPa as an initial pressure, and temperature-rise up to 1250° C. and pressure-rise to 146 MPa in first 3 hours, and keeping the temperature and the pressure for 3 hours. Thereafter, the temperature and the pressure were decreased for termination of the HIP.\n\n[0053]After the sintering had been terminated, test pieces for oxygen analysis were taken from the sintered bodies of the sample 11 of the invention and the comparative sample 12 at the position A, the position B, and the position C shown in FIG. 4 in the same manner as in the Example 1, and the analysis of oxygen quantity was performed by means of the LECO method. TABLE 4 shows results of the oxygen analysis. Oxygen quantities in TABLE 4 are expressed in mass ppm. It is seen from TABLE 4 that the sintered body, in which the getter material was arranged in the metallic container and the processing of expediting deoxidation prior to the main sintering at the time of HIP was incorporated, was adequately reduced in oxygen quantity irrespective of positions in the sintered body.\n\n[0054]TABLE 4SampleHeatOxygen Quantity (ppm)No.TreatmentPosition APosition BPosition CNote11Applied80 80100Example ofInvention12None90200230ComparativeExample\n\nEXAMPLE 4\n\n[0055]Like the Example 1, as shown in FIG. 1, after Ru material powder being material powder 4 containing oxygen of 1000 mass ppm was filled in a metallic container 1 of low carbon steel with a powder filling space having a diameter of 50 mm and a height of 250 mm, and four Ta foil pieces having a diameter of 40 mm and a thickness of 0.12 mm were arranged as a getter material 5 on a back side of an upper lid 2 of the metallic container, the upper lid of the metallic container with a deaerating port 3 was welded to the metallic container, pressure reducing evacuation was performed through the deaerating port 3 up to 1.0×10−2 Pa or less, and sealing was effected.\n\n[0056]The metallic container fabricated in the above manner and filled with the Ru material powder was subjected to sintering under a HIP condition shown in FIG. 8, and a resulting sintered body was made a sample 13 of the invention. Also, in a comparative sample, sintering was performed under a HIP condition different from that in the invention and shown in FIG. 9, and a resulting sintered body was made a comparative sample 14.\n\n[0057]The HIP condition of the invention shown in FIG. 8 included room temperature as an initial temperature, 31 MPa as an initial pressure, and temperature-rise up to 900° C. in first 3 hours and keeping the temperature for 4.5 hours. Thereafter, the pressure was increased to 146 MPa over 2.5 hours, the temperature was raised to 1300° C. over 3 hours since 1.5 hours out of the above 2.5 hours had elapsed, and the temperature was kept for 3 hours as it was. Thereafter, the temperature and the pressure were decreased for termination of the HIP.\n\n[0058]The HIP condition of the comparative sample shown in FIG. 9 included room temperature as an initial temperature, 54 MPa as an initial pressure, and temperature-rise up to 900° C. in first 3 hours and keeping the temperature for 5 hours. Thereafter, the pressure was increased to 146 MPa over 2 hours, the temperature was raised to 1300° C. over 3 hours since 1 hours out of the above 2 hours had elapsed, and the temperature was kept for 3 hours as it was. Thereafter, the temperature and the pressure were decreased for termination of the HIP.\n\n[0059]After the sintering had been terminated, test pieces for oxygen analysis were taken from the sintered bodies of the sample 13 of the invention and the comparative sample 14 at the position A, the position B, and the position C shown in FIG. 4 in the same manner as in the Example 1, and the analysis of oxygen quantity was performed by means of the LECO method. TABLE 5 shows results of the oxygen analysis. Oxygen quantities in TABLE 5 are expressed in mass ppm. It is seen from TABLE 5 that the sintered body of the sample 13 of the invention, in which the getter material was arranged in the metallic container and the processing of expediting deoxidation prior to the main sintering at the time of HIP was incorporated, was adequately reduced in oxygen quantity irrespective of positions in the sintered body.\n\n[0060]TABLE 5SampleHIPOxygen Quantity (ppm)No.ConditionPosition APosition BPosition CNote13FIG. 8150170190Example ofInvention14FIG. 9140200280ComparativeExample\n\nEXAMPLE 5\n\n[0061]As shown in FIG. 10, after Mo powder containing oxygen of 250 mass ppm, Ru powder containing oxygen of 1000 mass ppm, and powder obtained by mixing Mo powder containing oxygen of 250 mass ppm and W powder containing oxygen of 440 mass ppm so as to give the atomic weight ratio of Mo:W=50:50, respectively, were filled as material powder 4 in a metallic container 1 of low carbon steel with a powder filling space having a diameter of 50 mm and a height of 250 mm, four Ta foil pieces having a diameter of 40 mm and a thickness of 0.12 mm as a getter material 5 and TiH2 powder of 3 g as a hydride 6 were arranged on a back side of an upper lid 2 of the metallic container, the upper lid of the metallic container with a deaerating port 3 was welded to the metallic container, pressure reducing evacuation was performed through the deaerating port 3 up to 1.0×10−2 Pa or less while the metallic container was kept at 400° C., and sealing was effected.\n\n[0062]Also, Mo powder containing oxygen of 250 mass ppm as material powder 4, both of eight Nb foil pieces having a diameter of 40 mm and a thickness of 0.12 mm, and Zr powder of 17 g, respectively, as a getter material 5, and TiH2 powder of 3 g as a hydride 6 were subjected to pressure reducing evacuation to be sealed in the metallic container 1 in the same manner as described above.\n\n[0063]Sintering was performed under the HIP condition shown in FIG. 2 by the use of the metallic container 1 described above.\n\n[0064]After the sintering had been terminated, test pieces for oxygen analysis were taken in the same manner as in the Example 1 from the sintered bodies of the sample 15 of the invention with Mo as a material powder, Ta foil pieces as a getter material, and TiH2 powder as a hydride, the sample 16 of the invention with Ru as a material powder, Ta foil pieces as a getter material, and TiH2 powder as a hydride, the sample 17 of the invention with a mixed powder of Mo and W as a material powder, Ta foil pieces as a getter material, and TiH2 powder as a hydride, the sample 18 of the invention with Mo as a material powder, Nb foil pieces as a getter material, and TiH2 powder as a hydride, and the sample 19 of the invention with Mo as a material powder, Zr powder as a getter material, and TiH2 powder as a hydride, at a position A, a position B, and a position C shown in FIG. 3, and the analysis of oxygen quantity was performed by means of the LECO method. TABLE 6 shows results of the oxygen analysis. Oxygen quantities in TABLE 6 are expressed in mass ppm. It is seen from TABLE 6 that the sintered bodies of the samples 15 to 19 of the invention, in which the getter material and the hydride were arranged in the metallic container and the processing of expediting deoxidation prior to the main sintering at the time of HIP was incorporated, were adequately reduced in oxygen quantity irrespective of positions in the sintered bodies.\n\n[0065]TABLE 6MaterialGetterOxygen Quantity (ppm)Sample No.PowderMaterialHydridePosition APosition BPosition CNote15MoTa FoilTiH2495047Examples ofPieceInvention16RuTa FoilTiH2222426Piece17Mo—50 atTa FoilTiH2555255% WPiece18MoNb FoilTiH2606058Piece19MoZrTiH2434045Powder', '发明领域 \n\n [0001] 烧结体的制造方法技术领域本发明涉及其中氧被还原的烧结体的制造方法。 \n\n 发明背景 \n\n [0002] 粉末烧结法分为无加压法和热加压法,热等静压法等加压法。 尽管不加压的烧结方法通过在诸如氢气等的还原性气氛中进行烧结而能够减少烧结体中的氧气,但是在具有加压的粉末烧结方法中,例如热等静压等被认为是: 由于粉末被限制在诸如金属容器等的胶囊中进行烧结,因此密封后难以显着地减少氧气,因此该方法在很大程度上取决于原料粉末中氧气的减少。 \n\n [0003] 近来,作为在烧结体中还原氧气的方法,提出了例如一种方法,该方法是通过具有吸气金属来从被烧结的材料中移动和还原氧气,该吸气金属在较低的烧结温度下会形成氧化物。 当进行热等静压时,存在于与被烧结的材料接触的金属胶囊的内部中存在的,与由被烧结的金属材料形成的氧化物相比氧分解压力大的情况下(例如,JP-A-2000-144396  )。 \n\n [0004] JP-A-2000-144396公开了通过使存在于金属容器内部的吸气剂材料与被烧结的材料接触而从被烧结的材料中去除氧气,以允许存在于被烧结的材料中的氧气扩散。 在被烧结材料的表面上,与吸气材料结合。 \n\n [0005] 然而,在将吸气剂材料与被烧结的材料一起密封在金属容器中以使其存在于与被烧结的材料接触的金属容器的一部分中的方式进行加压烧结的情况下,是有效的。 由吸气剂材料引起的氧去除的趋向仅在与吸气剂材料接触的烧结体的表层部分中容易出现,并且烧结体中的氧不能被充分还原,因此仍然存在以下问题: 通常不可能均匀地减少残留在烧结体中的氧气。 \n\n 发明内容 \n\n [0006] 发明内容本发明的目的是解决上述问题,并提供一种制造烧结体的方法,该方法通常能够均匀地还原烧结体中的氧并显着提高脱氧能力。 \n\n [0007] 作为对基于加压烧结法的氧还原方法进行各种研究的结果,本申请的发明人发现,通过将金属粉末或合金粉末与金属粉末密封,可以进一步减少不可避免地包含在烧结体中的构成氧的杂质。 在金属容器中,在减压下具有比金属粉末或合金粉末更高的氧化电势的吸气材料,在发生脱氧反应的低压和温度范围内加速脱氧反应,并采用加热和加压方式 其中,在进行脱氧反应之后,在高温和高压条件下进行主烧结的方法,从而实现了本发明。 \n\n [0008] 更具体地,本发明提供了一种制造烧结体的方法,该方法包括在金属容器中在减压下将由金属粉末或合金粉末组成的材料粉末和具有比该材料粉末的氧化电势更高的氧化电位的吸气剂材料密封。 在压力不高于50MPa,温度不低于500℃的条件下将金属容器放置1至50小时,然后在压力高于50MPa,温度不高于1340℃的条件下烧结原料粉末。 \n\n [0009] 此外,本发明提供一种制造烧结体的方法,包括密封由金属粉末或合金粉末组成的材料粉末,具有比该材料粉末更高的氧化电位的吸气剂材料以及构成氢源的氢化物。 在金属容器中减压下,将金属容器在压力不高于50 MPa,温度不低于500℃的条件下保持1至50小时,然后在高于50 MPa的压力下烧结材料粉末。 温度不高于1340°C \n\n [0010] 而且,在本发明中,优选的是,吸气材料包括属于元素周期表中的IVa族或Va族的元素,并且与氢结合以形成氢化物的元素的氢解离温度高于400。 另外,在本发明中希望将熔点不低于1600℃的原料粉末应用于烧结体的制造,并且在本发明中优选的是,根据本发明制造的烧结体。 由于本发明的氧含量低,因此可以用作溅射靶材。 \n\n [0011] 根据本发明,通过使加压烧结而得到的烧结体中的氧大致均匀,可以显着提高脱氧能力,因此提供了制造烧结体必不可少的技术。 \n\n 附图的简要说明 \n\n [0012] 图。 附图说明图1是表示实施例1〜4中的填充有金属粉末的金属制容器的状态的图。 \n\n [0013] 图。 图2是表示实施例1的本发明的HIP中的温度和压力的条件的图。 \n\n [0014] 图。 图3是表示实施例1中的比较样品的HIP中的温度和压力的条件的图。 \n\n [0015] 图。 图4是表示从烧结体取出氧分析用试验片的位置的图。 \n\n [0016] 图。 图5是表示实施例2中的本发明的HIP中的温度和压力的条件的图。 \n\n [0017] 图。 图6是表示实施例2中的比较样品的HIP中的温度和压力的条件的图。 \n\n [0018] 图。 图7是表示实施例3中的本发明的HIP中的温度和压力的条件的图。 \n\n [0019] 图。 图8是表示实施例4的本发明的HIP中的温度和压力的条件的图。 \n\n [0020] 图。 图9是表示实施例4中的比较样品的HIP中的温度和压力的条件的图。 和 \n\n [0021] 图。 图10是表示实施例5中的填充有金属粉末的金属制容器的状态的图。 \n\n 具体实施方式 \n\n [0022] 如上所述,本发明的重要特征在于,在制造烧结体时,将原料粉末和氧化电位比原料粉末的氧化电位高的吸气剂密封在金属容器中,并且原料中所含的氧 在不开始原料粉末的烧结的温度和压力范围内,粉末被还原为吸气材料,从而对原料粉末进行脱氧处理,随后在高温和高压下进行烧结。 从而得到一种还原了作为杂质元素的氧的烧结体。 \n\n [0023] 在本发明的烧结体的制造方法中,将由金属粉末或合金粉末构成的材料粉末和氧化电位比该材料粉末的氧化电位高的吸气材料密封在金属容器中。 在这种情况下,当切断进一步的氧气供应时,氧气以吸附在金属粉末的内部和表面中的氧以及布置在金属容器中的材料粉末的表面上的氧化物的形式存在。 将原料粉末和吸气材料在减压下密封在金属容器中,并在低温和低压下对其进行热处理,在该状态下难以进行烧结并且可以在该状态下进行脱氧反应。 氧气的进一步供应被切断。 在难以进行烧结的条件下进行热处理的情况下,将填充在金属容器中的原料粉末置于多孔状态而在其中留下空隙的状态下,氧从 物料粉末不会在压缩时内部扩散到烧结体中,并且会以氧气或低价氧化物的蒸气形式转移到吸气材料中。 因此,脱氧效率大大提高。 \n\n [0024] 通过选择比构成烧结体的基质的元素对氧的亲和力高的金属元素作为本发明中的吸气材料,可以产生除氧的效果。 氧化电位。 \n\n [0025] 此外,当在压力不高于50MPa且温度不低于500℃的条件下对材料粉末进行热处理时,可以进行脱氧反应而无需迅速地进行烧结。 另外,由于脱氧的效果随着热处理时间的增加而提高,因此考虑到热处理的时间必须不少于1小时,并且考虑到烧结效率,脱氧反应优选在50小时或更短时间内进行。 \n\n [0026] 另外,根据上述条件,在充分进行脱氧反应之后,通过加压烧结表面清洁的原料粉末来制造烧结体。 在通过加压烧结制造烧结体时,期望在金属容器上施加不低于50MPa的压力。 其原因在于,当在不高于上述压力的压力下进行加压烧结时,难以制造具有足够密度的烧结体。 另外,在加压烧结时的温度条件必须考虑金属容器的耐热温度来设定。 在使用由低碳钢形成的金属容器的情况下,期望在不高于1340℃的温度下进行烧结。其原因在于,当在高于上述温度的温度下进行加压烧结时, 温度接近金属容器本身的熔点,并且金属容器本身熔化以污染所得的烧结体。 另外,为了使烧结体高密度化,优选对加压烧结使用热压和热等静压(HIP)。 \n\n [0027] 此外,在根据本发明的制造方法中,期望由金属粉末或合金粉末,具有比该材料粉末更高的氧化电势的吸气剂材料和构成氢源的氢化物组成的材料粉末。  ,在减压下密封在金属容器中。 这是因为,在将构成氢源的氢化物以及原料粉和吸气剂在减压下密封在金属容器内并进一步供给氧气的状态下进行加热的情况下。 截止时,当存在于金属容器中的氧与具有高氧化电位的吸气剂材料结合时,据信从氢化物解离的氢可作为从材料粉末到吸气剂材料的氧气的载体。 \n\n [0028] 更具体地说,首先对存在于原料粉末表面上的氧气进行氢还原以生成H。 2 O分子。 然后H 2 O分子移至吸气材料,H 2 O被吸气材料还原成H 2 。 即,认为氢作为载体将材料粉末中的氧气输送至吸气材料,从而更有效地促进脱氧。 \n\n [0029] 期望构成氢源的氢化物是氢解离温度高于400℃的氢化物。其原因在于,由于金属容器通常在约400℃下减压密封,因此氢 当使用氢解离温度不高于400℃的氢化物时,在减压过程中分离并由于脱氧处理而被排放到金属容器外。 例如,Ti和Zr的氢化物可以用作氢化物。 \n\n [0030] 另外,为了用作吸气剂,本发明中的吸气材料必须具有比材料粉末更高的氧化电位。 因此,根据材料粉末的种类选择吸气材料。 在例如将Mo,Mo合金和Ru用作原料粉末的情况下,可以想到,属于元素周期表的Ia至Va族的那些元素的氧化电位高于 这种材料粉末的粉末用作吸气材料。 考虑到成本和处理质量,在上述材料中,期望元素周期表中属于IVa族(Ti,Zr,Hf)或Va族(V,Nb,Ta)的元素。 \n\n [0031] 此外,期望将熔点不低于1600℃的元素的粉末用作金属粉末和合金粉末。 由于在很多情况下,元素的粉末是通过使用化学方法进行精制并在最后的过程中通过氧化物上的氢还原而制造的,因此大量的氧气残留在粉末表面上。 而且,在化学方法中制造的粉末在许多情况下是多孔的,因此,氧气经常残留在粉末表面上。 因此,由于在由元素粉末制造烧结体的情况下非常需要还原氧气,因此,当由以下元素的粉末制造烧结体时,根据本发明的制造烧结体的方法是优选的。 要素。 而且,当要制造元件的材料时,由于其熔点高而通常进行烧结工艺,因此为了减少元件制造中的氧气,本发明的制造方法在这种应用中是优选的。  。 \n\n [0032] 此外,由于根据本发明的制造烧结体的方法在减少烧结体中的氧方面非常有效,因此优选作为制造用于形成所使用的薄膜的低氧含量的溅射靶材的方法。 在信息产业。 另外,由于在脱氧处理后进行加压烧结的烧结体在清洁状态下具有晶界,因此对于减少溅射时的颗粒产生非常有用。 因此,通过本方法制造的烧结体特别适合于溅射靶材。 \n\n 例1 \n\n [0033] 如图1所示。  1,钼粉为原料粉后 4  将含有250质量ppm的氧气的金属填充到金属容器中 1  包括粉末填充空间直径为50毫米,高度为250毫米的低碳钢,直径为40毫米,厚度为0.1毫米的八个Nb箔片,直径为40毫米的四个Ta箔片 厚度为0.12毫米或Zr粉末 17 g  被安排为一种吸气材料 5  在上盖的背面 2  金属容器的顶部,金属容器的上盖带有排气口 3  被焊接到金属容器上,通过脱气口进行减压排气 3  高达1.0×10 −2 Pa以下,进行密封。 另外,在比较样品中,还制造了金属容器,其中没有布置吸气材料但是填充了材料粉末。 \n\n [0034] 将由此制造并填充有Mo粉末的金属容器在图1所示的HIP条件下进行烧结。  2。 \n\n [0035] 图1所示的本发明的HIP条件为: 图2的曲线图包括室温作为初始温度,8MPa作为初始压力,并且在开始的3小时内温度升高至1050℃并保持该温度4小时。 之后,在3小时内将压力升至146MPa,由于3小时中的2.5小时过去,所以将温度升至1250℃3小时,将温度原样保持3小时。 此后,降低温度和压力以终止HIP。 \n\n [0036] 此外,使用以相同方式填充有Mo粉末的金属容器,并在图1所示的HIP条件下进行烧结。 如图3所示,与本发明不同,其中不进行初始加热和保持。 \n\n [0037] 图3中所示的HIP条件为: 图3的曲线图包括室温作为初始温度,8MPa作为初始压力,并且在最初的3小时内温度升高至1050℃并且压力升高,并且将温度和压力保持6.5小时。 之后,在0.5小时内将温度升至1250℃,然后保持3小时。 此后,降低温度和压力以终止HIP。 \n\n [0038] 烧结结束后,从图1所示的本发明的样品和比较样品的烧结体中取出氧分析用试验片。 如图4所示,分别是距吸气材料25mm,125mm和225mm的位置A,位置B和位置C,并且通过LECO方法进行氧量的分析。  。 \n\n [0039] 表1示出了本发明的样品1中的烧结体的分析结果,其中,在图1所示的HIP条件下对Nb箔片进行了烧结。 图2中的吸气材料用作吸气材料,本发明的样品2,其中以与上述相同的方式进行烧结的Ta箔片用作吸气材料,以及本发明的样品3,其中 将以与上述相同的方式进行了烧结的Zr粉末用作吸气剂材料,并且在金属容器中没有吸气剂材料的比较样品4的烧结体。 \n\n [0040] 另外,表2示出了比较样品5中的烧结体的分析结果,其中,在该HIP条件下对Nb箔片进行了烧结,如图3所示。 将与本发明不同的图3的吸气材料用作吸气材料,作为比较样品6,其中将以与上述相同的方式进行烧结的Ta箔片用作吸气材料,比较样品7。 其中,以与上述相同的方式进行烧结的Zr粉末用作吸气剂材料,并且在比较样品8中的烧结体中金属容器中没有吸气剂材料。 表1和表2中的氧气量以质量ppm表示。 \n\n [0041] 从表1和表2中可以看出,本发明的样品1、2和3中的烧结体,其中吸气剂材料被布置在金属容器中,并且在进行主烧结之前,在进行快速烧结之前进行加速脱氧的处理。 结合了HIP,无论在烧结体中的位置如何,均能充分降低氧含量。 \n\n [0042] \n\n    表格1  样品 吸气剂 氧气量(ppm)  没有。 材料 位置A 位置B 位置C 注意  1 铌箔 90 90 100 示例  片 发明  2 铝箔 70 90 100  片  3 锆粉 50 70 90  4 没有 260 270 270 比较  例 \n\n [0043] \n\n    表2  样品 吸气剂 氧气量(ppm)  没有。 材料 位置A 位置B 位置C 注意  5 铌箔 100 220 250 比较  片 例子  6 铝箔 80 220 230  片  7 锆粉 70 210 220  8 没有 270 280 270 \n\n 例子2 \n\n [0044] 如图1所示,与实施例1相同。  1,茹料粉为料粉后 4  将含有1000质量ppm的氧气的金属填充到金属容器中 1  设置直径为50 mm,高度为250 mm的粉末填充空间的低碳钢和直径为40 mm,厚度为0.12 mm的四个Ta箔片作为吸气材料 5  在上盖的背面 2 金属容器的顶部,金属容器的上盖带有排气口 3  被焊接到金属容器上,通过脱气口进行减压排气 3  高达1.0×10 −2 Pa以下,进行密封。 \n\n [0045] 以上述方式制造并填充有Ru材料粉末的金属容器在图1所示的HIP条件下进行烧结。 参照图5,将所得的烧结体制成本发明的样品9。 另外,在比较样品中,在与本发明不同的HIP条件下进行烧结,如图1所示。 参照图6,将所得的烧结体制成比较样品10。 \n\n [0046] 图1所示的本发明的HIP条件为: 图5包括室温作为初始温度,8MPa作为初始压力,并且在开始的3小时内温度升高至900℃并保持该温度4小时。 之后,经过3小时将压力升高至146MPa,由于经过了上述3小时中的2小时,所以经过3小时将温度升高至1300℃,并且将温度保持3小时。 此后,降低温度和压力以终止HIP。 \n\n [0047] 图1所示的比较样品的HIP条件为: 图6包括室温作为初始温度,8MPa作为初始压力,并且在前3小时内温度升高至900℃并且压力升高至146MPa,并且将温度和压力保持6小时。 此后,在1小时内将温度升高至1300℃,并且将温度保持3小时。 此后,降低温度和压力以终止HIP。 \n\n [0048] 烧结结束后,从图1所示的位置A,位置B和位置C的本发明的样品9和比较样品10的烧结体中取出氧分析用试验片。 以与实施例1相同的方式进行图4所示的处理,通过LECO法进行氧量的分析。 表3显示了氧气分析的结果。 表3中的氧气量以质量ppm表示。 从表3中可以看出,在本发明的样品9中的烧结体是适当的,在该烧结体中,将吸气剂材料布置在金属容器中,并且在HIP时进行了主要烧结之前进行了加速脱氧的处理。 与烧结体中的位置无关地减少氧的量。 \n\n [0049] \n\n    表3  样品 髋关节 氧气量(ppm)  没有。 健康)状况 位置A 位置B 位置C 注意  9 图。  5 150 160 160 例子  发明  10 图。  6 140 300 350 比较  例 \n\n 实施例3 \n\n [0050] 如图1所示,与实施例1相同。  1,Mo料粉为料粉后 4  将含有250质量ppm的氧气的金属填充到金属容器中 1  设置直径为50 mm,高度为250 mm的粉末填充空间的低碳钢和直径为40 mm,厚度为0.12 mm的四个Ta箔片作为吸气材料 5  在上盖的背面 2  金属容器的顶部,金属容器的上盖带有排气口 3  被焊接到金属容器上,通过脱气口进行减压排气 3  高达1.0×10 −2 Pa以下,进行密封。 \n\n [0051] 将以上述方式制造并填充有Mo材料粉末的金属容器在Ar气氛中在大气压下进行850℃×20小时的热处理,然后在图1所示的HIP条件下进行烧结。 参照图7,将所得的烧结体制成本发明的样品11。 而且,在比较样品中,在HIP烧结之前未进行热处理,而是在图1中的HIP条件下进行烧结。 进行图7的试验,将所得的烧结体作为比较样品12。 \n\n [0052] 图3中所示的HIP条件为: 图7包括室温作为初始温度,8MPa作为初始压力,并且在最初的3小时内温度升高至1250℃并且压力升高至146MPa,并且将温度和压力保持3小时。 此后,降低温度和压力以终止HIP。 \n\n [0053] 烧结结束后,从图1所示的位置A,位置B和位置C的本发明的试样11和比较试样12的烧结体中取出氧分析用试验片。 以与实施例1相同的方式进行图4所示的处理,通过LECO法进行氧量的分析。 表4显示了氧气分析的结果。 表4中的氧气量以质量ppm表示。 从表4中可以看出,无论位置如何,都充分降低了烧结体的氧含量,在该烧结体中,吸气剂材料被布置在金属容器中,并且在HIP时进行了主要烧结之前的加速脱氧的处理被并入。 在烧结体内。 \n\n [0054] \n\n    表4  样品 热 氧气量(ppm)  没有。 治疗 位置A 位置B 位置C 注意  11 已应用 80 80 100 例子  发明  12 没有 90 200 230 比较  例 \n\n 实施例4 \n\n [0055] 如图1所示,与实施例1相同。  1,茹料粉为料粉后 4  将含有1000质量ppm的氧气的金属填充到金属容器中 1  设置直径为50 mm,高度为250 mm的粉末填充空间的低碳钢和直径为40 mm,厚度为0.12 mm的四个Ta箔片作为吸气材料 5  在上盖的背面 2  金属容器的顶部,金属容器的上盖带有排气口 3  被焊接到金属容器上,通过脱气口进行减压排气 3  高达1.0×10 −2 Pa以下,进行密封。 \n\n [0056] 以上述方式制造并填充有Ru材料粉末的金属容器在图1所示的HIP条件下进行烧结。 参照图8,将所得的烧结体制成本发明的样品13。 另外,在比较样品中,在与本发明不同的HIP条件下进行烧结,如图1所示。 参照图9,将所得的烧结体作为比较样品14。 \n\n [0057] 图1所示的本发明的HIP条件为: 图8的曲线图包括室温作为初始温度,31MPa作为初始压力,并且在开始的3小时内温度上升至900℃并保持该温度4.5小时。 之后,在2.5小时内将压力升至146MPa,由于在上述2.5小时中经过1.5小时,所以在3小时内将温度升至1300℃,将温度保持3小时。 此后,降低温度和压力以终止HIP。 \n\n [0058] 图1所示的比较样品的HIP条件为: 图9包括室温作为初始温度,54MPa作为初始压力,并且在开始的3小时内温度升高至900℃并保持该温度5小时。 之后,在2小时内将压力升至146MPa,由于经过了上述2小时中的1小时,所以在3小时内将温度升至1300℃,将温度保持3小时。 此后,降低温度和压力以终止HIP。 \n\n [0059] 烧结结束后,从图1所示的位置A,位置B和位置C的本发明的样品13和比较样品14的烧结体中取出氧分析用试验片。 以与实施例1相同的方式进行图4所示的处理,通过LECO法进行氧量的分析。 表5显示了氧气分析的结果。 表5中的氧气量以质量ppm表示。 从表5中可以看出,本发明的样品13的烧结体是适当的,在该烧结体中,将吸气剂材料布置在金属容器中,并且在HIP时进行了主要烧结之前,进行了加速脱氧的处理。 与烧结体中的位置无关地减少氧的量。 \n\n [0060] \n\n    表5  样品 髋关节 氧气量(ppm)  没有。 健康)状况 位置A 位置B 位置C 注意  13 图。  8 150 170 190 例子  发明  14 图。  9 140 200 280 比较  例 \n\n 实施例5 \n\n [0061] 如图1所示。 参照图10,在含有250质量ppm的氧的Mo粉末,含有1000质量ppm的氧的Ru粉末和通过混合含有250质量ppm的氧的Mo粉末和含有440质量ppm的氧的W粉末得到原子量之后得到的粉末。 分别以Mo:W = 50:50的比例填充为原料粉末 4  在金属容器中 1  由吸气材料制成的低碳钢,粉末填充空间的直径为50 mm,高度为250 mm,四个Ta箔片的直径为40 mm,厚度为0.12 mm 5  和TiH 2  3 g氢化物粉末 6  被安排在上盖的背面 2  金属容器的顶部,金属容器的上盖带有排气口 3  被焊接到金属容器上,通过脱气口进行减压排气 3  高达1.0×10 −2 在将金属容器保持在400℃的同时Pa为Pa以下,进行密封。 \n\n [0062] 另外,作为原料粉末,含有250质量ppm的氧的Mo粉末 4 分别作为吸气剂材料的8个直径为40 mm,厚度为0.12 mm的Nb箔片和17 g的Zr粉末 5 和TiH 2  3 g氢化物粉末 6  进行减压抽真空以密封在金属容器中 1  以与上述相同的方式。 \n\n [0063] 在图1所示的HIP条件下进行烧结。  2通过使用金属容器 1  如上所述。 \n\n [0064] 烧结结束后,以与实施例1相同的方式,从本发明的样品15的烧结体中取出氧,将Mo作为原料粉末,将Ta箔片作为吸气剂,并进行氧分析。 钛 2  粉末作为氢化物,本发明的样品16以Ru为粉末材料,Ta箔片作为吸气剂材料,以及TiH 2  作为氢化物的粉末,本发明的样品17,其具有作为材料粉末的Mo和W的混合粉末,作为吸气剂材料的Ta箔片和TiH 2  作为氢化物的粉末,本发明的样品18,其中Mo作为原料粉末,Nb箔片作为吸气剂,TiH 2  粉末作为氢化物,以及本发明的样品19,其中Mo作为原料粉末,Zr粉末作为吸气剂材料,TiH 2  在图1所示的位置A,位置B和位置C处,粉末作为氢化物。 参照图3,通过LECO法进行氧量的分析。 表6示出了氧分析的结果。 表6中的氧气量以质量ppm表示。 从表6中可以看出,本发明的样品15至19的烧结体,其中吸气剂材料和氢化物被布置在金属容器中,并且在HIP时在主要烧结之前加快脱氧的处理。 不论烧结体中的位置如何,都可以充分降低氧含量。 \n\n [0065] \n\n    表6  材料 吸气剂 氧气量(ppm)  样品编号 粉末 材料 氢化物 位置A 位置B 位置C 注意  15 莫 铝箔钛 2  49 50 47 示例  片 发明  16 Ru 铝箔钛 2  22 24 26  片  17 Mo—50 at 铝箔钛 2  55 52 55  %W 片  18 莫 铌箔钛 2  60 60 58  片  19 莫 Zr钛 2  43 40 45  粉末');
INSERT INTO `os_patent_instruction_text` VALUES (13019, 22848, '【技術分野】\n\n本発明は、希土類焼結磁石、特にR-Fe-B系焼結磁石の製造方法および希土類焼結磁石の製造に用いられる希土類合金粉末の製造方法に関する。\n\n【背景技術】\n\n希土類合金の焼結磁石(永久磁石)は、一般に、希土類合金の粉末をプレス成形し、得られた粉末の成形体を焼結し、必要に応じて時効処理することによって製造される。現在、希土類·コバルト系(典型的にはサマリウム·コバルト系)磁石と、希土類·鉄·ボロン系(典型的にはネオジム·鉄·ボロン系)磁石の二種類が各分野で広く用いられている。なかでも、希土類·鉄·ボロン系磁石(以下、「R-Fe-B系磁石」と称する。RはYを含む希土類元素、Feは鉄、Bはボロンである。)は、種々の磁石の中で最も高い最大磁気エネルギー積を示し、価格も比較的安いため、各種電子機器へ積極的に採用されている。\n\nR-Fe-B系焼結磁石は、主にR2Fe14Bの正方晶化合物からなる主相(「R2Fe14B型結晶層」ということもある。)、Nd等からなるRリッチ相、およびBリッチ相から構成されている。なお、Feの一部がCoやNiなどの遷移金属と置換されてもよく、Bの一部がCで置換されてもよい。本発明が好適に適用されるR-Fe-B系焼結磁石は、例えば、米国特許第4,770,723号明細書および米国特許第4,792,368号明細書に記載されている。米国特許第4,770,723号明細書および米国特許第4,792,368号明細書の開示内容の全てを本明細書に援用する。\n\nこのような磁石となるR-Fe-B系合金を作製するために、従来は、インゴット鋳造法が用いられてきた。一般的なインゴット鋳造法によると、出発原料である希土類金属、電解鉄およびフェロボロン合金を高周波溶解し、得られた溶湯を鋳型内で比較的ゆっくりと冷却することによって固体合金(合金インゴット)が作製される。また、Ca還元法(あるいは還元拡散法ともいわれる。)によって固体合金を得る方法も知られている。\n\n近年、合金の溶湯を単ロール、双ロール、回転ディスク、または回転円筒鋳型の内面などと接触させることによって、比較的速く冷却し、合金溶湯から、インゴットよりも薄い凝固合金を作製するストリップキャスト法や遠心鋳造法に代表される急冷法(「液体急冷法」といわれることもある。)が注目されている。\n\n本明細書においては、急冷法によって得られた固体合金を「急冷合金(または急冷凝固合金)」と呼び、従来のインゴット鋳造法やCa還元法によって得られる固体合金と区別することにする。急冷合金は、典型的には、フレークまたはリボン(薄帯)の形態を有している。\n\n急冷合金は、従来のインゴット鋳造法(金型鋳造法)によって作製された固体合金(インゴット合金)に比較して相対的に短い時間(冷却速度:102℃/sec以上2×104℃/sec以下)で冷却されているため、組織が微細化され、結晶粒径が小さいという特徴を有している。また、粒界の面積が広く、Rリッチ相は粒界内に広く広がっているため、Rリッチ相の分散性にも優れるという利点がある。これらの特徴が故に、急冷合金を用いることによって、優れた磁気特性を有する磁石を製造することができる。\n\nプレス成形に供される合金粉末は、これらの急冷合金を、例えば水素化粉砕法および/または種々の機械的粉砕法(例えば、ボールミルやアトライターが用いられる)で粉砕し、得られた粗粉末(例えば、平均粒径10μm〜500μm)を例えばジェットミルを用いた乾式粉砕法で微粉砕することによって得られる。プレス成形に供せられる合金粉末の平均粒径は、磁気特性の観点から、1μm以上10μm以下の範囲内にあることが好ましく、1.5μm以上7μm以下の範囲内にあることがさらに好ましい。なお、粉末の「平均粒径」は、特にことわらない限り、ここでは、FSSS粒径を指すことにする。\n\nこのようにして得られる急冷合金の粉末は、典型的には一軸プレス工程によって成形体に加工される。急冷合金の粉末は、その製造方法のために粒度分布が狭く、充填性が悪く、所望の充填密度まで粉末をキャビティに充填することができない、という問題がある。\n\nそこで、急冷合金の粉末の充填性を改善するために種々の対策が検討されている。例えば、特開2000-219942号公報には、ロール急冷法を用いて、粒径が3μm以下のチル晶を体積分率で1〜30%含む急冷合金を作製し、これを粉砕することによって得られた急冷合金の粉末を用いると、従来よりも充填率が向上し、焼結温度を低下できると記載されている。\n\nなお、「チル晶」とは、R-Fe-B系希土類合金の溶湯が急冷装置の冷却ロールなどの冷却部材の表面と接触し、凝固を開始する初期の段階でロール表面近傍に形成される結晶相であり、冷却凝固過程の初期段階以降に形成される柱状組織(デンドライト状組織)に比べて、相対的に等方的(等軸的)かつ微細な構造を有している。すなわち、チル晶はロール表面で急速に冷却凝固することによって生成される。\n\n【発明の開示】\n\nしかしながら、チル晶は磁気的に等方的な微細構造を有しているので、急冷合金の粉末が多くのチル晶を含むと、最終的に得られる焼結磁石の磁気特性が低下するという問題がある。\n\n本発明は、上記の諸点に鑑みてなされたものであり、本発明の主な目的は、チル晶を実質的に含まず、且つ、従来よりも充填性が優れた希土類急冷合金の粉末を製造する方法およびそのような粉末を用いた希土類焼結磁石の製造方法を提供することにある。\n\n本発明の希土類合金粉末の製造方法は、R2T14A(Rは、Yを含む希土類元素、Tは、Fe、またはFeとFe以外の遷移金属元素の少なくとも1種との混合物、Aはボロンまたはボロンと炭素との混合物)で表される組成の主相を有する希土類焼結磁石の製造に用いられる希土類合金粉末の製造方法であって、第1の組成を有する第1希土類合金の溶湯から急冷法によって作製された急冷合金であって、平均デンドライト幅が第1の範囲内にある柱状組織を有する第1希土類急冷合金を用意する工程と、第2の組成を有する第2希土類合金の溶湯から急冷法によって作製された急冷合金であって、平均デンドライト幅が前記第1希土類急冷合金よりも小さな第2の範囲内にある柱状組織を有する第2希土類急冷合金を用意する工程と、前記第1希土類急冷合金を粉砕することによって第1希土類合金粉末を作製する工程と、前記第2希土類急冷合金を粉砕することによって第2希土類合金粉末を作製する工程と、前記第1希土類合金粉末と前記第2希土類合金粉末とを含む、粉末混合物を作製する工程とを包含することを特徴とし、そのことによって上記目的が達成される。\n\nある実施形態において、前記第1の範囲は前記第1希土類合金粉末の平均粒径以上であり、前記第2の範囲は前記第2希土類合金粉末の平均粒径未満である。\n\n前記第1の範囲は3μm以上6μm以下であることが好ましく、前記第2の範囲は1.5μm以上2.5μm以下であることが好ましい。\n\nある実施形態の希土類合金粉末の製造方法は、前記第1希土類急冷合金を粗粉砕することによって第1希土類合金粗粉末を得る工程と、前記第2希土類急冷合金を粗粉砕することによって第2希土類合金粗粉末を得る工程と、前記第1および第2希土類急冷合金粗粉末を混合し混合粗粉末を得る工程と、前記混合粉末を微粉砕することによって、平均粒径が1μm以上10μm以下の範囲内にある前記粉末混合物を得る工程とを包含する。\n\nある実施形態の希土類合金粉末の製造方法は、前記第1希土類急冷合金から平均粒径が1μm以上10μm以下の範囲内にある第1希土類粉末を作製する工程と、前記第2希土類急冷合金から平均粒径が1μm以上10μm以下の範囲内にある第2希土類粉末を作製する工程と、前記第1希土類粉末と前記第2希土類粉末とを混合することによって前記粉末混合物を得る工程とを包含する。\n\n前記混合粉末に含まれる前記第1希土類急冷合金と前記第2希土類合金粉末との体積比率は、95:5〜60:40の範囲内にあることが好ましい。80:20〜70:30の範囲内にあることがさらに好ましい。\n\nある実施形態において、前記第2希土類急冷合金はストリップキャスト法によって作製される。\n\nある実施形態において、前記第1希土類急冷合金はストリップキャスト法によって作製\n\nされる。\n\nある実施形態において、前記第1希土類急冷合金は遠心鋳造法によって作製される。\n\nある実施形態において、前記第1希土類急冷合金は、30質量%以上32質量%以下のRを含む。また、ある実施形態において、前記第2希土類急冷合金は、33.5質量%以上35質量%以下のRを含む。\n\n本発明の希土類焼結磁石の製造方法は、R2T14A(Rは、Yを含む希土類元素、Tは、Fe、またはFeとFe以外の遷移金属元素の少なくとも1種との混合物、Aはボロンまたはボロンと炭素との混合物)で表される組成の主相を有する希土類焼結磁石の製造方法であって、上記のいずれかの製造方法によって製造された希土類合金粉末を用意する工程と、前記希土類合金粉末を含む粉末材料をプレス成形することによって成形体を得る工程と、前記成形体を焼結する工程とを包含することを特徴とし、そのことによって上記目的が達成される。\n\n【図面の簡単な説明】\n\n図1は、チル晶を実質的に含まない急冷合金の断面顕微鏡写真である。\n\n図2は、チル晶を含む組織を有する急冷合金の断面顕微鏡写真である。\n\n【発明を実施するための最良の形態】\n\n以下、図面を参照しながら、本発明によるR-Fe-B系希土類焼結磁石の製造方法の実施形態を説明する。\n\n本願明細書においては、R-Fe-B系焼結磁石の主相の組成をR2T14Aという組成式で表すことにする。この主相はR2T14A型(Nd2Fe14B型)結晶構造(正方晶)を有する。\n\nここで、Rは希土類元素(Yを含む)、Tは、Fe、またはFeとFe以外の遷移金属元素の少なくとも1種との混合物、Aはボロンまたはボロンと炭素との混合物である。なお、希土類元素Rは、NdおよびPrの少なくとも1種の軽希土類元素を含むことが好ましく、また、保磁力の観点からは、Dy、HoおよびTbの内から選ばれる少なくとも1種の重希土類元素を含むことが好ましい。軽希土類元素は、希土類元素Rの全体50原子%以上を占めることが好ましい。また、Fe以外の遷移金属元素は、Ti、V、Cr、Mn、Fe、Co、Niなどであり、Tは、その全部がFe、あるいはFeの一部がNiおよびCoの少なくとも一方で置換されたものが好ましい。\n\n焼結磁石の全体の組成としては、Rを25質量%〜40質量%、Aを0.6質量%〜1.6質量%、残部がTおよび微量添加元素(ならびに不可避不純物)を含むことが、磁気特性の観点から好ましい。なお、微量添加元素は、Al、Cu、Ga、Cr、Mo、V、NbおよびMnの少なくとも1種であることが好ましく、添加量は微量添加物の合計が全体の1質量%以下であることが好ましい。\n\n本発明は、急冷合金の粉末の充填性と急冷合金の組織との関係について検討した結果得られた以下に説明する新たな知見に基づいてなされたものである。\n\n上述した所望の組成の希土類合金原料の溶湯を準備し、それを急冷することによって、急冷合金を作製すると、その組成および/または急冷条件によって、種々の組織を有する急冷合金が得られる。\n\n例えば、ストリップキャスト法(例えば、米国特許第5、666、635号明細書を参照、米国特許第5、666、635号明細書の開示内容の全てを本明細書に援用する。)を用いて急冷合金を作製する場合、冷却ロールの周速度が比較的速いと、図2に示すようなチル晶を含む組織が形成される。図2に示した急冷合金の断面顕微鏡写真は、約10体積%のチル晶が形成されている。\n\nこれに対し、ロールの周速度が比較的遅いと、図1に示すように、チル晶を含まない実質的にデンドライト組織(柱状組織あるいは柱状結晶)のみからなる組織が形成される。また、実質的にデンドライト組織だけを含む組織であっても、ロールの周速度がより遅いものほどデンドライトの幅が広くなる。\n\nこのような急冷合金における組織の違いは、合金の組成にも依存して変わる。例えば、同じ急冷条件(例えば冷却ロールの周速度)で比較すると、Rの含有量が多い程デンドラ\n\nイトの幅が小さくなる傾向が認められた。\n\nこのように、組織が異なる急冷合金を作製し、それぞれ、所定の条件で、粉砕工程から、プレス成形工程、焼結工程を経て、焼結磁石を作製し、得られた焼結磁石の磁気特性を評価するとともに、プレス成形に供した合金粉末の充填性などを評価した結果、デンドライト幅が異なる急冷合金から作製した合金粉末を混合して用いると、合金粉末の充填性が改善され、その結果、焼結磁石の磁気特性が改善されることがわかった。この理由は、デンドライト幅が異なる急冷合金を粉砕すると、それぞれのデンドライト幅に対応した粒度分布を有する粉末が得られ、その結果、混合粉末の粒度分布が相対的に広がるためであると考えられる。また、デンドライト幅が異なる急冷合金から得られた粉末粒子のアスペクト比が互いに異なることも影響していると考えられる。例えば、混合粉末の一方の急冷合金の平均デンドライト幅が平均粒径以上であり、他方の急冷合金の平均デンドライト幅が平均粒径未満であるという関係を満足するように、それぞれの急冷合金のデンドライト幅を制御することによって、アスペクト比が異なる粒子からなる粉末が得られる。\n\nなお、この急冷合金の組織を特徴付けるデンドライト幅として、その平均値(平均デンドライト幅)を用いる。また、平均デンドライト幅は、断面顕微鏡観察において、一定幅(例えば20μm〜50μm)内に存在するデンドライトの本数を数え、平均値を算出することによって求めた(「線分法」と呼ばれることもある。)。なお、試料数は5個以上とした。\n\n本発明による希土類合金粉末の製造方法は、(a)第1の組成を有する第1希土類合金の溶湯から急冷法によって作製された急冷合金であって、平均デンドライト幅が第1の範囲内にある柱状組織を有する第1希土類急冷合金を用意する工程と、(b)第2の組成を有する第2希土類合金の溶湯から急冷法によって作製された急冷合金であって、平均デンドライト幅が第1希土類急冷合金よりも小さく、且つ第2の範囲内にある柱状組織を有する第2希土類急冷合金を用意する工程と、(c)第1希土類急冷合金を粉砕することによって第1希土類合金粉末を作製する工程と、(d)第2希土類急冷合金を粉砕することによって第2希土類合金粉末を作製する工程と、(e)第1希土類合金粉末と第2希土類合金粉末とを含む、粉末混合物を作製する工程とを包含する。\n\n第1の範囲は3μm以上6μm以下であることが好ましく、第2の範囲は1.5μm以上2.5μm以下であることが好ましい。第1希土類合金粉末の平均デンドライト幅が6μmを超えると保磁力が低下するという不具合が発生することがあり、3μm未満であると充填性が低下するという不具合が発生することがある。また、第2希土類合金粉末の平均デンドライト幅が2.5μmを超えると充填性および/または焼結性が低下するという不具合が発生することがあり、1.5μm未満であると均一な組織を形成することが難しいという不具合が発生することがある。\n\nなお、第1希土類合金粉末の平均デンドライト幅を平均粒径以上に設定し、第2希土類合金粉末の平均デンドライト幅を平均粒径未満に設定することが好ましい。このように設定すると、第1希土類合金粉末の粒子のアスペクト比と第2希土類合金粉末の粒子のアスペクト比が互いに異なる結果、混合粉末の充填性が改善されると考えられる。特に、第1希土類合金粉末の平均粒径と第2希土類合金粉末の平均粒径とを略等しくした場合に効果的である。\n\n混合粉末に含まれる第1希土類急冷合金と第2希土類合金粉末との体積比率は、95:5〜60:40の範囲内にあることが好ましく、80:20〜70:30の範囲内にあることがさらに好ましい。混合比率が上記の範囲を外れると充填性の改善効果が十分に得られないことがある。第1希土類合金粉末および第2希土類合金粉末に加えて、平均デンドライト幅が異なる第3希土類合金粉末を混合しても良い。\n\n平均デンドライト幅の異なる急冷合金は、例えば、急冷速度を変えることによって作製することができる。ストリップキャスト法を用いる場合、例えば、冷却ロールの周速度を変えることによって急冷速度を調節することができる。ストリップキャスト法は量産性に優れるという利点を有している。また、デンドライト幅が比較的大きな急冷合金は、急冷速度が比較的遅い遠心鋳造法によって製造することもできる。\n\n平均デンドライト幅の異なる急冷合金は、合金原料の組成を変えることによって作製することもできる。もちろん、合金原料の組成と急冷速度との両方を調節してもよい。例えば、ストリップキャスト法を用いて急冷合金を作製する場合には、第1希土類急冷合金は30質量%以上32質量%以下のRを含むことが好ましく、第2希土類急冷合金は33.5質量%以上35質量%以下のRを含むことが好ましい。第1希土類合金および第2希土類合金の組成が上記範囲から外れると、所望のデンドライト幅の急冷合金を得ることが困難になる。\n\n平均デンドライト幅が異なる急冷合金から得られた第1希土類合金粉末と第2希土類合金粉末との混合粉を得るための混合工程は適当な段階で行えばよい。急冷合金は、典型的にはフレーク状であり、成形工程に供する合金粉末を得るまでに、2段階の粉砕工程(粗粉砕工程および微粉砕工程)を経る。このプロセスにおいて、急冷合金フレークの段階、急冷合金フレークを粗粉砕することによって粗粉末の段階、または粗粉末を微粉砕することによって得られた微粉末(上記第1希土類合金粉末および第2希土類合金粉末に対応)の段階のいずれの段階で混合してもよい。\n\nなお、合金原料の酸化を抑制するために、微粉末よりも合金フレークまたは粗粉末の段階で混合することが好ましく、混合工程と粉砕工程とを同時に実行することもできる。勿論、配合比率を決定する前に、それぞれの希土類合金原料(合金フレーク、粗粉末または粉末)の組成分析を行うことが好ましい。\n\n最終的にプレス成形に供される合金粉末の平均粒径は、約1μm〜約10μmの範囲内にあることが好ましく、1.5μm〜7μmの範囲内にあることが更に好ましい。急冷合金粉末の表面には、必要に応じて、酸化の抑制および/または流動性やプレス成形性を改善するために潤滑剤を付与してもよい。潤滑剤の付与は、急冷合金の粗粉末を微粉砕する工程で実行することが好ましい。潤滑剤としては、脂肪酸エステルを主成分とする液体潤滑剤を好適に用いることができる。\n\n上述のようにして得られた混合粉末を用いて、公知の成形方法によって成形体を作製し、公知の方法で焼結磁石を作製することができる。\n\n急冷合金粉末(混合粉末)のプレス成形(例えば一軸プレス成形)は、例えば、電動プレスを用い、約1.5Tの磁界中で配向させつつ、1.5ton/cm2(150MPa)の圧力で行なわれる。ここで、急冷合金粉末をプレス装置のキャビティに充填する際に、本発明の実施形態による急冷合金粉末は充填性に優れるので、従来よりも充填密度を向上することができる。従って、比較的低い温度でも所定の密度の焼結体を得ることができる。すなわち、焼結過程において結晶粒が過大に成長することを抑制できる結果、従来よりも保磁力の高い焼結磁石を得ることができる。\n\n得られた成形体を、例えば約1000℃以上約1100℃以下の温度で、不活性ガス(希ガスや窒素ガス)雰囲気下(減圧されていることが好ましい)、または真空中で、約1〜5時間焼結する。得られた焼結体を、例えば約450℃〜約800℃の温度で、約1〜8時間時効処理することによって、R-Fe-B系合金焼結体が得られる。なお、焼結体に含まれる炭素の量を減らし、磁気特性を向上するために、上記焼結工程の前に、必要に応じて、合金粉末の表面を覆う潤滑剤を加熱除去してもよい。加熱除去工程は、潤滑剤の種類にもよるが、例えば、約100℃から600℃の温度で、減圧雰囲気下で、約3〜約6時間実行される。\n\n得られた焼結体を着磁することによって、焼結磁石が完成する。着磁工程は、焼結工程後の任意の時点で実行することが可能で、モータ等の装置に組み込まれた後で実行されることもある。着磁磁界は、例えば、2MA/m以上である。\n\n【実施例】\n\n以下、本発明によるR-Fe-B系焼結磁石の製造方法について、実施例を挙げて説明するが、本発明は以下の実施例によって何ら限定されるものではない。\n\n第1希土類合金の組成は、Nd+Pr+Dy:31.3質量%(Dy1.2質量%以上2.0質量%以下、残部がNd+Pr)、B:1.0質量%、Co:0.9質量%、Al:0.2質量%、Cu:0.1質量%、残部:Feおよび不可避不純物である。この組成\n\nの第1希土類合金を約1350℃で溶解し、得られた合金溶湯からストリップキャスト法を用いて、急冷合金(合金フレーク)を作製した。冷却ロールの周速度を60m/minとすることによって、厚さが約0.3mmの合金フレークを得た。この合金フレークの断面を顕微鏡で観察した結果、チル晶を実質的に含まず、実質的に柱状晶のみからなる急冷合金であることを確認した。また、平均デンドライト幅は、約4μmであった。\n\n一方、第2希土類合金の組成は、Nd+Pr+Dy:34.5質量%(Dy1.0質量%以上2.0質量%以下、残部がNd+Pr)、B:1.0質量%、Co:0.9質量%、Al:0.2質量%、Cu:0.1質量%、残部:Feおよび不可避不純物である。この組成の第2希土類合金を約1350℃で溶解し、得られた合金溶湯からストリップキャスト法を用いて、急冷合金(合金フレーク)を作製した。冷却ロールの周速度を90m/minとすることによって、厚さが約0.2mmの合金フレークを得た。この合金フレークの断面を顕微鏡で観察した結果、チル晶を実質的に含まず、実質的に柱状晶のみからなる急冷合金であることを確認した。また、平均デンドライト幅は、約2μmであった。\n\n【実施例1】\n\n本実施例では、上述の様にして作製された第1および第2希土類合金フレークを例えば水素化粉砕法を用いてそれぞれ別々に粗粉砕した。得られた粗粉末をロッキングミキサー(回転式混合装置)を用いて混合した。混合比率(体積基準)は、75:25とした。\n\n得られた混合粗粉末をジェットミル装置を用いて、平均粒径が約3μmとなるように微粉砕した。なお、粗粉末を混合する前に所定量ずつジェットミル装置に投入し、微粉砕しながら混合するようにしても良い。この後、脂肪酸エステルを主成分とする潤滑剤を約0.3質量%添加し混合した。\n\n得られた混合粉末をプレス成形(プレス圧力1ton/cm2、配向磁界1.5T))することによって、成形体(縦18mm×横55mm×高さ25mm(プレス方向))を得た。なお、配向磁界の方向は成形方向に直角である。得られた成形体の質量は、100gである。\n\n1050℃で4時間、減圧Ar雰囲気中で焼結し、その後、500℃で1時間の時効処理を施した。その後、パルス着磁装置を用いて着磁した後、サーチコイルおよびフラックスメータを用いて、得られた焼結磁石の磁気特性を評価した。また、充填密度は、タップデンサによって評価した。ここでいう充填密度は、タップデンサによって求められたかさ密度を指す。結果を表1に示す。\n\n【実施例2】\n\n実施例1と同様にして第1希土類合金の粗粉末および第2希土類合金の粗粉末を作製した後、それぞれ、別々にジェットミル装置を用いて微粉砕し、平均粒径が約3μmの第1希土類合金粉末および第2希土類合金粉末を得た。これらの微粉末を75:25の比率でロッキングミキサーを用いて混合することによって、混合粉末を得た。このあと、実施例1と同様にして、焼結磁石を作製し、磁気特性を評価した。\n\n【実施例3】\n\n第1希土類急冷合金を遠心鋳造法で作製した以外は、実施例1と同様にして、焼結磁石を作製した。遠心鋳造法で作製した第1希土類急冷合金はチル晶を実質的に含まず、実質的に柱状晶のみからなる急冷合金であることを確認した。また、平均デンドライト幅は、約20μmであった。\n\n(比較例1)\n\n希土類合金の組成は、Nd+Pr+Dy:32.0質量%(Dy1.0質量%以上2.0質量%以下、残部がNd+Pr)、B:1.0質量%、Co:0.9質量%、Al:0.2質量%、Cu:0.1質量%、残部:Feおよび不可避不純物である。この組成の第1希土類合金を約1350℃で溶解し、得られた合金溶湯からストリップキャスト法を用いて、急冷合金(合金フレーク)を作製した。冷却ロールの周速度を100m/minとすることによって、厚さが約0.3mmの合金フレークを得た。この合金フレークの断面を顕微鏡で観察した結果、チル晶を10体積%含む急冷合金であることを確認した。この後、実施例1と同様に粗粉砕、微粉砕工程を経て、成形体を作製し、焼結磁石を作製した\n\n。\n\n(比較例2)\n\n比較例1と同じ組成の希土類合金を用いて、ストリップキャスト法で急冷合金(合金フレーク)を作製した。冷却ロールの周速度を70m/minとすることによって、厚さが約0.3mmの合金フレークを得た。この合金フレークの断面を顕微鏡で観察した結果、チル晶を実質的に含まない急冷合金であることを確認した。この後、実施例1と同様に粗粉砕、微粉砕工程を経て、成形体を作製し、焼結磁石を作製した。\n\n(比較例3)\n\n比較例1と同じ組成の希土類合金を用いて、遠心鋳造法で急冷合金を作製した。この急冷合金の断面を顕微鏡で観察した結果、チル晶を実質的に含まず、実質的に柱状晶のみからなる急冷合金であることを確認した。また、平均デンドライト幅は、約25μmであった。この後、実施例1と同様に粗粉砕、微粉砕工程を経て、成形体を作製し、焼結磁石を作製した。\n\n\n\n表1の結果からわかるように、実施例1から3の希土類合金粉末(混合粉末)は、比較例1から3(未混合粉末)よりも充填密度が高く、その結果、比較的低い焼結温度で焼結しても所望の密度(7.5g/cm3)を得ることができ、保磁力HcJが高い。\n\n遠心鋳造法を用いて作製した第1希土類急冷合金(平均デンドライト幅約20μm)を用いた実施例3は、ストリップキャスト法を用いて作製した第1希土類急冷合金(平均デンドライト幅約4μm)を用いた実施例1および2よりも磁気特性が劣る。このことから、ストリップキャスト法を用いて急冷合金を作製することが好ましいことがわかる。\n\n次に、平均デンドライト幅の好ましい範囲を検討するための実験を行った結果を説明する。\n\n第1希土類合金および第2希土類合金としてそれぞれ上記実施例と同じ組成の合金を用い、ストリップキャスト法の条件を変えることによって、デンドライト幅の異なる第1希土類急冷合金および第2希土類急冷合金を作製した。それぞれの試料の平均デンドライト幅を表2に示す。第1希土類急冷合金および第2希土類急冷合金の作製以降は、実施例2と同様にして、焼結磁石を作製した。但し、焼結温度は、それぞれ表3に示した温度とした。得られた焼結磁石の磁気特性を評価した。その結果を表3に示す。\n\n\n\n\n\n表3に示したように、第1希土類急冷合金の平均デンドライト幅が8μmの試料4は、他の試料よりも保磁力HcJが低い。このように、保磁力の観点から、第1希土類急冷合金の平均デンドライト幅は6μm以下であることが好ましい。なお、第1希土類急冷合金の平均デンドライト幅が大きい方が、残留磁束密度Brが増大し、保磁力HcJが減少する傾向になる。\n\nまた、第2希土類急冷合金の平均デンドライト幅が1.5μm以上2.5μm以下の範囲内にあれば、磁気特性は実質的な差は見られない。なお、当然のことながら、第1希土類合金粉末の平均デンドライト幅が3μm未満で、第2希土類合金粉末の平均デンドライト幅が2.5μmを超えると、2種類の希土類合金粉末を混合することによって得られる充填性の向上効果が得られ無くなる。なお、種々実験した結果、平均デンドライト幅が1.5μm未満の希土類急冷合金を得ることは困難であり、平均デンドライト幅1.5μmが最小値ということになる。\n\n次に、実施例2と同じ第1希土類合金粉末と第2希土類合金粉末とを用いて、混合比率(体積比率)の最適な範囲を検討した実験結果の例を説明する。表4に第1希土類合金粉末と第2希土類合金粉末との体積比率およびタップデンサで求めた充填密度(かさ密度)を示す。\n\n\n\n表4の結果からわかるように、第1希土類急冷合金粉末と第2希土類合金粉末との体積比率は、95:5〜60:40の範囲内にあることが好ましく、特に、80:20〜70:30の範囲内にあることが好ましい。このような配合比率によって充填性が改善される\n\n理由は必ずしも明らかではないが、第1希土類合金粉末によって形成される間隙を第2希土類合金粉末が埋めるのに適した体積比率であると考えられる。\n\n【産業上の利用可能性】\n\n本発明によると、チル晶を実質的に含まず、且つ、従来よりも充填性が優れた希土類急冷合金の粉末を製造する方法およびそのような粉末を用いた希土類焼結磁石の製造方法が提供される。', '【技术领域】\n\n本发明涉及一种稀土烧结磁体,一种用于制造R-Fe-B基烧结磁体的方法,以及用于制造用于生产稀土烧结磁体的稀土合金粉末的方法。\n\n发明背景\n\n稀土合金的烧结磁体(永磁体)通常通过压制稀土合金的粉末制造,烧结所得粉末的形成的粉末,并根据需要凝聚。目前,两种类型的稀土,钴(通常是钐钴系统)磁铁和稀土,铁,硼(通常是钕 - 铁和硼系统)磁体被广泛应用于每个领域。其中,稀土,铁,基于硼基磁铁(下文中称为“R-Fe-B基磁体”。R是含有Y,Fe的稀土元素是铁,B是硼。)是不同的磁铁由于显示了最高最大磁能产品并且价格相对较低,因此可以为各种电子设备进行积极采用。\n\nR-Fe-B基烧结磁铁主要是r2Fe.14主阶段由B的方形化合物组成(“r2Fe.14还有一个B型晶体层。富含Nd等的R富型相,以及丰富的相位。 Fe的一部分可以被诸如CO或Ni的过渡金属代替,或者B的一部分可以被C取代。基于R-Fe-B的烧结磁铁,其中本发明优选地应用,例如,在美国专利No.5,522,517中。美国专利No.4,770,723和美国专利No.美国专利号4,792,368。美国专利No.4,522,517中的所有披露内容。美国专利No.4,770,723和美国专利No.4,792,368通过引用并入本文。\n\n为了生产R-Fe-B基合金,通常使用铸锭铸件。根据一般的铸锭铸造方法,通过稀土金属,电解铁和铁源合金的高频溶解来制备固体合金(合金锭),电解铁和铁源合金是一种原料,并在模具中相对缓慢地冷却得到的熔融金属。将会完成。另外,通过Ca还原方法(或还原扩散方法)获得固体合金的方法也是已知的。\n\n近年来,通过接触单辊,双辊,旋转盘或旋转圆柱形模板,以及产生比来自铸锭的凝结合金的带钢铸造方法相对快速地冷却合金的熔融金属。通过离心表示的合金熔融金属和淬火方法(例如“液态猝灭法”)正在引起注意力。\n\n在本说明书中,通过淬火获得的固体合金称为“淬火合金(或快速凝固合金)”,并将其与通过Ca还原方法获得的常规铸锭铸造和固合金区分开。淬火合金通常具有薄片或丝带(带)形式。\n\n与常规铸锭铸件(模具铸造)制备的固体合金(铸锭合金)相比淬火合金相对较短(冷却速度:102°C / SEC或更多2×104因为它被°C./sec冷却),所以组织小型化并且具有晶粒尺寸小的特征。另外,由于晶界面积宽,并且R-富级相在晶界中广泛扩散,因此有一个优点是R-富含相的分散性优异。因此,通过这些特征,可以通过使用淬火合金来制造具有优异磁性的磁体。\n\n用于压制成形的合金粉末用这些淬火合金粉碎,例如氢化和/或各种机械研磨方法(例如,使用球磨机和吸引仪),并且获得的粗粉(例如,平均粒径为10通过使用喷射磨机用干磨法研磨来获得μm至500μm。从磁特性的观点来看,用于压制成型的合金粉末的平均粒径优选在1μm至10μm的范围内,更优选为1.5μm至7μm。另外,除非另有说明,否则粉末的“平均粒径”是指本文的FSSS粒度。\n\n由此获得的淬火合金的粉末通常通过单轴压制工艺加工成模塑体。淬火合金的粉末是粒度分布由于制造生产的方法而窄的问题,并且包装差,并且粉末不能填充到腔中直到所需的填充密度。\n\n因此,已经研究了各种措施来改善淬火合金粉末的填充。例如,使用轧辊淬火方法的日本专利公开No.2000-219942制备含有1至30%的粒径为3μm或更小的含有粒径为3μm或更小的猝灭合金,并通过破碎获得它。使用快速冷合金的粉末,描述了可以提高填充速率并且可以降低烧结温度。\n\n另外,在与冷却构件的冷却构件的表面的初始阶段的初始阶段中形成“Chill晶体”在诸如R-Fe-B基稀土合金的冷却辊的表面的初始阶段,开始凝固。与在冷却凝固过程的初始阶段之后形成的柱状组织(树枝状类组织)相比,它是结晶相并且具有相对各向同性(均值的)和细结构。也就是说,通过快速冷却并在辊表面上固化来产生冷却晶体。\n\n发明的描述\n\n然而,由于寒冷晶体具有磁各向同性微观结构,当淬火合金的粉末含有许多胆汁晶体时,最终获得的烧结磁体的磁性降低。在那里。\n\n本发明已经鉴于上述几点进行,本发明的主要目的基本上不含裂解晶体,并产生稀土淬料合金的粉末,其填充性优于过去。制造方法和方法提供了使用这种粉末的稀土烧结磁体。\n\n制备本发明的稀土合金粉末的方法是2T.14A(R是含有Y的稀土元素,T是除Fe,Fe和Fe以外的过渡金属元素中的至少一种的混合物,A是由硼或硼和碳代表的组合物制造方法用于生产具有主相的稀土烧结磁体的稀土合金粉末,通过从具有第一组成的第一稀土合金的熔融金属淬火产生的快速冷却合金,以及平均枝晶突然冷却合金生产通过从具有柱状组织的第二稀土合金的熔融金属淬灭,其宽度在具有第二组合物的第二稀土合金的第一范围内和第二稀土合金的熔融金属中,通过制备第二稀土化的第一稀土合金粉末淬火合金的柱状组织具有小于第一稀土淬火合金的二串宽度的树突宽度和第一稀土淬火合金。制备粉末混合物,并通过压碎制备第二稀土合金粉末的步骤第二稀土淬火合金,以及包括第一稀土合金粉末和第二稀土合金粉末的粉末混合物。其特征在于包括该方法,该方法实现了上述目的。\n\n在一个实施方案中,第一范围等于或高于第一稀土合金粉末的平均粒径,第二范围小于第二稀土合金粉末的平均粒径。\n\n第一范围优选为3μm以上且6μm以下,第二范围优选为1.5μm以上且2.5μm或更小。\n\n根据一个实施方案的稀土合金粉末的制造方法是通过大致粉碎第一稀土淬火合金和第二稀土淬火合金获得第一稀土合金粗粉末的步骤。获得合金粗糙的步骤粉末和混合第一和第二稀土淬火合金粗粉末并获得混合粗粉末的步骤,并且通过研磨混合粉末,平均粒径为1μm以上且10μm或更小。它包括在内部获得粉末混合物的方法。\n\n根据一个实施方案的制备稀土合金粉末的方法是使第一稀土粉末的平均粒径为1μm以上且从第一稀土淬火合金的10μm或更小的步骤,以及平均值第二稀土淬火合金。在1μm以上且10μm或更小的范围内生产第二稀土粉的方法,以及第一稀土粉末和第二稀土粉末,获得粉末混合物的过程获得。\n\n混合粉末中包含的第一稀土淬火合金和第二稀土合金粉末的体积比优选在95:5至60:40的范围内。更优选地,在80:20至70:30的范围内。\n\n在一个实施方案中,第二稀土淬火合金通过条带铸造方法制成。\n\n在一个实施方案中,第一稀土淬火合金由条带铸造方法制造。\n\n将会完成。\n\n在一个实施方案中,第一稀土淬火合金由离心铸造方法制成。\n\n在一个实施方案中,第一稀土淬火合金包含r为30质量%以上且32质量%以下。而且,在一个实施方案中,第二稀土淬火合金含有33.5质量%以上的R,33.5质量%,35质量%以下。\n\n制备本发明的稀土烧结磁体的方法是2T.14A(R是含有Y的稀土元素,T是除Fe,Fe和Fe以外的过渡金属元素中的至少一种的混合物,A是由硼或硼和碳代表的组合物制造方法具有主相的稀土烧结磁体,并通过制备通过任何上述制造方法制造的稀土合金粉末,通过压制含有稀土合金粉末的粉末材料来表征,其特征在于获得获得的步骤烧结模制体的主体和烧结的步骤,这将实现上述目的。\n\n[简要描述;简介]\n\n图。图1是基本上不含氯晶体的淬火合金的横截面显微镜。\n\n图。图2是具有包含氯晶体的组织的淬火合金的横截面显微照片。\n\n实施本发明的最佳方式\n\n在下文中,将参考附图描述根据本发明的制造基于R-Fe-B基稀土烧结磁体的方法的实施例。\n\n在本说明书中,R-Fe-B基烧结磁体的主相的组成是R2T.14它由组合式式A表示。这个主要阶段是2T.14一种类型(nd2Fe.14B型)具有晶体结构(四方)。\n\n这里,R表示稀土元素(含有Y),T是Fe和Fe以外的过渡金属元素的混合物,a是硼或硼和碳的混合物。稀土元素R优选含有Nd和Pr的至少一个小稀土元素,并且从矫顽力的观点出发,优选地,从矫顽力,至少一种从Dy,HO和Tb中选择的重稀土元素。优选细本的地球元素占稀土元素的50多个原子%。另外,除Fe之外的过渡金属元素是Ti,V,Cr,Mn,Fe,Co,Ni和T被取代的至少一种Fe或Fe。它们是优选的。\n\n作为烧结磁体的整个组成,它是磁性特性,25质量%至40质量%,0.6%至1.6质量%,其余部分是T和迹线添加元素(以及不可避免的杂质) 。从观点出发。少量添加剂元素优选为Al,Cu,Ga,Cr,Mo,V,Nb和Mn中的至少一种,并且添加量为微量添加剂的总量为1质量%或更少。优选。\n\n本发明是基于下面描述的新发现的制作,其是通过检查粉末填充和快速冷却的合金粉末的淬火合金之间的关系而获得的。\n\n通过制备上述所需组合物的所需组合物的熔融金属并淬火淬火合金,可以通过组合物和/或骤冷条件获得具有各种组织的淬火合金。\n\n剥离铸造方法(参见,美国专利No.5,666,635,美国专利No.5,666,635。美国专利No.5,666,635。)在制备淬火合金时,含有寒冷晶体的组织当冷却辊的圆周速度相对快速时,形成图2所示。图2中所示的快速冷却合金的横截面显微照片。图2的含量约为10%的冷却晶体。\n\n另一方面,如果辊的圆周速度相对较慢,如图2所示。如图1所示,仅形成仅形成不含冷却晶体的基本上枝晶组织(柱状组织或柱状晶体)组织。而且,即使是基本上仅包括树枝状组织的组织,辊的滚动速度越大,树突宽度越宽。\n\n这种淬火合金中的组织的差异根据合金的组成而变化。例如,与相同的淬火条件相比(例如,冷却辊的外围速率),R含量的量大\n\n它的宽度趋于降低。\n\n如上所述,产生具有不同组织的淬火合金,并且在预定条件下,从粉碎步骤,烧结步骤和所得烧结磁体的磁性产生烧结磁体。由于评估填充物的结果用于压模的合金粉末的性质等,如果从具有不同树突宽度的淬火合金制备的合金粉末混合,则得到改善合金粉末的灌装性能,结果发现磁性特性烧结磁体得到改善。其原因被认为是当碎裂宽度粉碎时对应于每个树枝状宽度的粒度分布的粉末,结果,相对膨胀的混合粉末的粒度分布。另外,认为从具有不同树突宽度的淬火合金获得的粉末颗粒的纵横比彼此不同。例如,满足每个淬火的合金枝晶,使得混合粉末的一个淬火合金的平均枝形宽度等于或大于平均粒度,而另一个猝灭合金的平均柔晶宽度小于平均颗粒直径。通过控制宽度,可以获得由具有不同纵横比的颗粒组成的粉末。\n\n另外,作为表征该骤冷合金组织的树突宽度,使用平均值(平均树突宽度)。另外,通过在横截面微观观察中计数存在于恒定宽度(例如,20μm至50μm)中存在的树枝状簇的数量来确定平均树形宽度,并且通过计算平均值来确定(有时引用作为“线段方法”。)。样品的数量是五个或更多。\n\n根据本发明的稀土合金粉末的制造方法是通过从具有第一组合物(A)的第一稀土合金的熔融金属淬火而产生的突然冷却合金,平均树突宽度在第一范围内。通过从具有柱状组织的第二稀土合金的熔融金属淬火而产生的快速冷却合金,以及具有第二组合物的第二稀土合金的第二稀土合金,平均树枝状宽度是第一个稀土。制备具有小于淬火合金的柱状组织的第二稀土淬火合金的步骤,并通过研磨第一稀土淬火合金,第一稀土合金粉末。制造第二稀土的过程合金粉末通过研磨工艺(d)第二稀土淬火合金和(e),含有(e)第一稀土合金粉末和第二稀土合金粉末的粉末混合物。它包括该过程。\n\n第一范围优选为3μm以上且6μm以下,第二范围优选为1.5μm以上且2.5μm或更小。当第一稀土合金粉末的平均颗粒重量宽度超过6μm时,可以降低矫顽力的缺陷,如果它小于3μm,则可能发生填充性能降低的问题。另外,如果第二稀土合金粉末的平均型号宽度超过2.5μm,则可以减少填充性和/或烧结性的缺陷,并且当它小于1.5μm时形成均匀的组织可能存在问题很困难。\n\n另外,优选将第一稀土合金粉末的平均德哆岩宽度设定为平均粒径或更高,并将第二稀土合金粉末的平均颗粒散宽设置在平均粒径低于平均粒径。如上所述,认为混合粉末的填充是由于第一稀土合金粉末的颗粒的纵横比和第二稀土合金粉末的颗粒的纵横比而改善。特别地,当第一稀土合金粉末的平均粒径和第二稀土合金粉末的平均粒径基本相等时,它是有效的。\n\n混合粉末中含有的第一稀土淬火合金和第二稀土合金粉末之间的体积比优选在95:5至60:40的范围内,并且在80:20至70:30的范围内。更优选地,它是。如果混合比超出上述范围,则可能无法充分获得填充性的改善效果。除了第一稀土合金粉末和第二稀土合金粉末之外,还可以混合具有不同平均枝晶宽度的第三稀土合金粉末。\n\n例如,可以通过改变淬火速度来生产具有不同平均枝晶宽度的淬火合金。例如,当使用条带铸造方法时,可以通过改变冷却辊的圆周速度来调节淬火速度。牵引力具有优势,质量生产率优异。而且,具有相对大的树突宽度的淬火合金可以通过离心铸造方法制造相对减慢淬火速度的离心铸造方法制造。\n\n也可以通过改变合金原料的组成来制备具有不同平均枝晶宽度的淬火合金。当然,可以调节合金原料的组成和淬火速率。例如,在使用带钢铸造方法制造淬火合金的情况下,第一稀土淬火合金优选为30质量%以上,且32质量%以下,第二稀土淬火合金为33.5%质量以上和35,优选包含质量%或更低的r。当第一稀土合金和第二稀土合金的组合物超出上述范围时,难以获得所需的树突宽度的淬火合金。\n\n用于获得第一稀土合金粉末的混合粉末的混合粉末和由具有不同平均枝晶宽度的淬火合金获得的第二稀土合金粉末的混合方法可以在合适的阶段进行。通过获得待对成形过程的合金粉末,通常剥落并通过两步研磨过程(粗磨过程和细碎步骤)通过淬火并通过淬火合金。在该方法中,通过通过粗粉碎淬火合金薄片通过粗粉碎(第一稀土合金粉末和第二稀土合金的粗粉末通过细细粉碎而获得的细粉的步骤(它可以在任何阶段混合颜料步骤。\n\n另外,为了抑制合金原料的氧化,优选以合金薄片或粗粉末的顺序混合而不是细粉,并且可以同时进行混合过程和研磨过程。当然,在确定复合比之前,优选分析每个稀土合金原料(合金薄片,粗粉或粉末)的组成分析。\n\n最终提供以压制成形的合金粉末的平均粒径优选在约1μm至约10μm的范围内,更优选在1.5μm至7μm的范围内。根据需要,可以提供淬火合金粉末的表面,以改善抑制氧化和/或流动性并压制成形性。润滑剂的施加优选在研磨淬火合金的粗粉末的步骤中进行。作为润滑剂,可以适当地使用具有脂肪酸酯作为主要成分的液体润滑剂。\n\n通过使用如上所述获得的混合粉末,可以通过已知的模塑方法制造成型体,并且可以通过已知方法制造烧结磁体。\n\n按压淬火合金粉末(混合粉末)(例如,单轴压制成形)是例如1.5吨/厘米,同时使用电压,并定向在约1.5吨的磁场中。2它在(150MPa)的压力下进行。这里,当将淬火合金粉末填充到压制装置的空腔中时,根据本发明的实施方案的淬火合金粉末的填充性优异,因此可以提高填充密度在现有技术中。因此,即使在相对低的温度下也可以获得预定密度的烧结体。也就是说,结果,即可以在烧结过程中抑制晶粒,可以获得比现有技术的高矫顽力的烧结磁体。\n\n所得的模塑体例如在大气(优选在减压下)或真空下约1000℃或更低约1100℃或更低(优选减压)的温度,约1至1次烧结5小时。将所得烧结体在约450℃至约800℃的温度下老化约1至8小时,例如,以获得R-Fe-B合金烧结体。另外,为了减少烧结体中所含的碳量,并改善磁性特性,在烧结过程之前,如有必要,可以加热和除去覆盖合金粉末表面的润滑剂。。可以例如在约100℃至600℃的温度下进行加热除去步骤,例如,在约100℃至600℃的温度下约3至约6小时。\n\n通过磁化所获得的烧结体,完成烧结磁体。可以在烧结步骤之后的任何时间进行磁化过程,并且可以在结合到诸如电动机的装置之后进行。磁化磁场例如是2mA / m以上。\n\n【例子】\n\n在下文中,将通过实施例描述制造根据本发明的R-Fe-B基烧结磁体的方法,但是本发明不受以下任何实施例的限制。\n\n第一稀土合金的组合物是Nd + Pr + Dy:31.3质量%(Dy 1.2质量%以上,2.0重量%或更低,其余Nd + Pr),B:1.0重量%, CO:0.9重量%,Al:0.2质量%,Cu:0.1质量%,残留:Fe和不可避免的杂质。这个组成\n\n将第一稀土合金的淬火合金合金溶解在约1350℃下,使用来自所得合金熔融金属的带铸造方法制造淬火合金(合金薄片)。通过将冷却辊的圆周速度设定为60 m / min,获得厚度为约0.3mm的合金薄片。由于使用显微镜观察该合金薄片的横截面的结果,证实它基本上不含胆汁晶体,并且基本上仅由柱状晶体组成的淬火合金。而且,平均枝晶宽度为约4μm。\n\n另一方面,第二稀土合金的组合物是Nd + Pr + Dy:34.5质量%(Dy 1.0质量%以上,2.0质量%或更低,剩余部分Nd + Pr),B: 1.0质量%,CO:0.9质量%,Al:0.2质量%,Cu:0.1质量%,余量:Fe和不可避免的杂质。将该组合物的第二稀土合金溶解在约1350℃下,并使用来自所得合金熔融金属的带铸造方法制备淬火合金(合金薄片)。通过设定90m / min的冷却辊的圆周速度,获得厚度为约0.2mm的合金薄片。由于使用显微镜观察该合金薄片的横截面的结果,证实它基本上不含胆汁晶体,并且基本上仅由柱状晶体组成的淬火合金。而且,平均枝形宽度为约2μm。\n\n例1\n\n在本实施例中,如上所述制备的第一和第二稀土合金薄片粗略地使用例如氢化研磨方法分别粉碎。将得到的粗粉与锁定混合器(旋转混合装置)混合。混合比(体积标准)为75:25。\n\n研磨所得混合粗粉末,使得使用喷射磨机装置的平均粒径为约3μm。注意,在混合粗粉末之前,可以将预定量引入喷射磨机装置中,并且可以在精细破碎的同时进行混合。此后,加入具有脂肪酸酯作为主要成分的润滑剂,并通过加入约0.3质量%。\n\n得到的混合粉末的压制成型(压力1吨/厘米2通过使用取向磁场1.5T获得成型体(18mm宽×55mm)。取向磁场的方向垂直于模制方向。所得成型体的质量为100g。\n\n在减压Ar气氛中在1050℃下烧结4小时,然后在500℃下1小时。此后,在使用脉冲磁化装置磁化之后,使用搜索线圈和磁通计评估所获得的烧结磁体的磁特性。此外,通过Tap DENCOS评估填充密度。这里提到的填充密度是指通过抽头密度获得的堆积密度。结果如表1所示。\n\n例2.\n\n在制备第一稀土合金的粗粉末和第二稀土合金的粗粉末以与实施例1相同的方式,各自用喷射磨机装置分别粉碎,平均粒径为约3μm。获得稀土合金粉末和第二稀土合金粉末。通过将这些细粉末与锁定混合器的比例与75:25的比例混合来获得混合粉末。此后,制备烧结磁体,并以与实施例1相同的方式评价磁性。\n\n例3.\n\n除了通过离心铸造方法制备第一稀土淬火合金之外,以与实施例1相同的方式生产烧结磁体。通过离心铸造方法制备的第一稀土淬火合金基本上不含胆汁晶体,证实它是仅由柱状晶体组成的淬火合金。而且,平均枝形宽度约为20μm。\n\n比较例1\n\n稀土合金的组合物是Nd + Pr + Dy:32.0质量%(Dy 120质量%以上,2.0质量%,剩余部分Nd + Pr),B:1.0重量%,CO :0.9重量%,Al:0.2质量%,Cu:0.1重量%,余量:Fe和不可避免的杂质。将该组合物的第一个稀土合金溶解在约1350℃下,并使用所得合金熔融金属制备淬火合金(合金薄片),使用条带铸造方法制备。通过将冷却辊的圆周速度设定为100m / min,获得厚度为约0.3mm的合金薄片。由于使用显微镜观察该合金薄片的横截面的结果,证实它是含有10%体积%的氯晶体的淬火合金。此后,如在第一实施例中,通过粗碎制造成型体,并产生粉碎工艺,并产生烧结磁体。\n\n。\n\n比较例2\n\n通过使用与比较例1相同的组合物的稀土合金的稀土合金,通过条带铸造产生淬火合金(合金薄片)。通过将冷却辊的圆周速度设定为70m / min,获得厚度为约0.3mm的合金薄片。由于观察到这种合金薄片的横截面用显微镜,证实冷却晶体基本上不含加强合金。此后,通过粗制破碎制造成型体,并制备如实施例1中的粉碎过程,并产生烧结磁体。\n\n(比较例3)\n\n通过使用相同组合物的稀土合金作为对比例1的稀土合金,通过离心铸造产生淬火合金。由于与显微镜观察猝灭合金的横截面,证实它基本上不含冷冻晶体,并且基本上仅是仅由柱状晶体组成的淬火合金。而且,平均枝形宽度为约25μm。此后,通过粗制破碎制造成型体,并制备如实施例1中的粉碎过程,并产生烧结磁体。\n\n\n\n从表1的结果可以看出,根据实施例1至3的稀土合金粉末(混合粉末)比比较例1至3(未固化粉末)更高的填充密度,结果,烧结温度相对较低即使用所需密度烧结(7.5g / cm)3可以获得),矫顽力HCJ高。\n\n实施例3使用使用离心铸造方法制备的第一稀土淬火合金(平均树突宽度为约20μm),使用使用条带铸造方法制备的条带铸造方法(平均树枝状宽度约4μm)使用。磁特性较少比那1和2。由此,可以理解的是,优选使用条带铸造方法制造淬火合金。\n\n接下来,将描述用于检查平均凹痕光宽度的优选范围的实验结果。\n\n通过使用与第一稀土合金的合金改变与第一稀土合金和第二稀土合金的合金,通过改变带钢铸造方法的条件,制备具有不同树突宽度的第一稀土淬火合金和具有不同树突宽度的第二稀土淬火合金。条带铸造方法的条件。。每个样品的平均颗粒光宽度如表2所示。在制备第一稀土淬火合金和第二稀土淬火合金之后,以与实施例2相同的方式生产烧结磁体。然而,烧结温度分别作为表3所示的温度。评价所得烧结磁体的磁性。结果显示在表3中。\n\n\n\n\n\n如表3所示,具有第一稀土淬火合金的平均凸宽的样品4为8μm,矫顽力Hcj低于其他样品的矫顽力。如上所述,从矫顽力的观点来看,第一稀土淬火合金的平均颗粒光宽度优选为6μm或更小。另外,第一稀土淬火合金的平均颗粒状光宽度趋于增加残留磁通密度Br,矫顽力Hcj趋于降低。\n\n另外,如果第二稀土淬火合金的平均凹形宽度为1.5μm以上且2.5μm或更小的,则没有看到显着差异。当然,第一稀土合金粉末的平均型号宽度小于3μm,当第二稀土合金粉末的平均德哆岩宽度超过2.5μm时,可以通过混合两种稀土合金粉末获得。消除了改善填充物的效果。由于各种实验,难以获得平均凹痕宽度小于1.5μm的稀土淬火合金,并且平均枝形宽度为1.5μm是最小值。\n\n接下来,将描述使用相同的第一稀土合金粉末和第二稀土合金粉末,如实施例2中使用相同的第一稀土合金粉末检查混合比(体积比)的实验结果的实例。表4显示了第一稀土合金粉末和第二稀土合金粉末的体积比和通过敲击密度获得的填充密度(堆积密度)。\n\n\n\n从表4的结果可以看出,第一稀土淬火合金粉末和第二稀土合金粉末之间的体积比优选在95:5至60:40的范围内,特别是80:20至70 ,范围内:30。通过这种复合比率改善了填充性质\n\n原因不一定清楚,但认为由第一稀土合金粉末形成的间隙是适于填充第二稀土合金粉末的体积比。\n\n【工业可用性】\n\n根据本发明,可以制造制造稀土淬火合金粉末的方法,该粉末基本上不含富胆汁晶体,并且具有优异的填充性,并且使用这种制造稀土烧结磁体的方法粉末。它将完成。');
INSERT INTO `os_patent_instruction_text` VALUES (13020, 22849, 'TECHNICAL FIELD\n\n[0001]The present invention relates to a method for producing a rare-earth sintered magnet (more particularly, an R—Fe—B based sintered magnet) and also relates to a method of making a rare-earth alloy powder for use to produce such a rare-earth sintered magnet.\n\nBACKGROUND ART\n\n[0002]A rare-earth alloy sintered magnet (permanent magnet) is normally produced by compacting a powder of a rare-earth alloy, sintering the resultant powder compact and then subjecting the sintered body to an aging treatment if necessary. Permanent magnets currently used extensively in various applications include rare-earth-cobalt based (typically samarium-cobalt based) magnets and rare-earth-iron-boron based (typically neodymium-iron-boron based) magnets. Among other things, the rare-earth-iron-boron based magnets (which will be referred to herein as “R—Fe—B based magnets”, where R is one of the rare-earth elements including Y, Fe is iron, and B is boron) are used more and more often in various electronic appliances. This is because an R—Fe—B based magnet exhibits a maximum energy product, which is higher than any of various other types of magnets, and yet is relatively inexpensive.\n\n[0003]An R—Fe—B based sintered magnet includes a main phase consisting essentially of a tetragonal R2Fe14B compound (which will be sometimes referred to herein as an “R2Fe14B type crystal layer”), an R-rich phase including Nd, for example, and a B-rich phase. In the R—Fe—B based sintered magnet, a portion of Fe may be replaced with a transition metal such as Co or Ni and a portion of B may be replaced with C. An R—Fe—B based sintered magnet, to which the present invention is applicable effectively, is described in U.S. Pat. Nos. 4,770,723 and 4,792,368, for example, the entire contents of which are hereby incorporated by reference.\n\n[0004]In the prior art, an R—Fe—B based alloy has been prepared as a material for such a magnet by an ingot casting process. In an ingot casting process, normally, rare-earth metal, electrolytic iron and ferroboron alloy as respective start materials are melted by an induction heating process, and then the melt obtained in this manner is cooled relatively slowly in a casting mold, thereby preparing a solid alloy (i.e., alloy ingot). A method for obtaining a solid alloy by a Ca reduction process (which is also called a “reduction diffusion process”) is also known.\n\n[0005]Recently, a rapid cooling process (which is also called a “melt-quenching process”) such as a strip casting process or a centrifugal casting process has attracted much attention in the art. In a rapid cooling process, a molten alloy is brought into contact with, and relatively rapidly cooled by, a single chill roller, a twin chill roller, a rotating disk or the inner surface of a rotating cylindrical casting mold, thereby making a solidified alloy, which is thinner than an alloy ingot, from the molten alloy.\n\n[0006]A solid alloy obtained by a rapid cooling process will be referred to herein as a “rapidly cooled alloy (or rapidly solidified alloy)” so as to be easily distinguished from a solid alloy obtained by a conventional ingot casting process or Ca reduction process. The rapidly solidified alloy typically has the shape of a flake or a ribbon (thin strip).\n\n[0007]Compared to a solid alloy made by the conventional ingot casting process or die casting process (such an alloy will be referred to herein as an “ingot alloy”), the rapidly solidified alloy has been quenched in a shorter time (i.e., at a cooling rate of 102° C./sec to 104° C./sec). Accordingly, the rapidly solidified alloy has a finer texture and a smaller crystal grain size. In addition, in the rapidly solidified alloy, the grain boundary thereof has a greater area and the R-rich phases are dispersed broadly and thinly over the grain boundary. Thus, the rapidly solidified alloy also excels in the dispersiveness of the R-rich phases. Because the rapidly solidified alloy has these advantageous features, a magnet with excellent magnetic properties can be made from the rapidly solidified alloy.\n\n[0008]An alloy powder to be compacted is obtained by coarsely pulverizing a rapidly solidified alloy in any of these forms by a hydrogen pulverization process, for example, and/or any of various mechanical grinding processes (e.g., using a ball mill or attritor) and finely pulverizing the resultant coarse powder (with a mean particle size of 10 μm to 500 μm) by a dry pulverization process using a jet mill, for example. The alloy powder to be compacted preferably has a mean particle size of 1 μm to 10 μm, more preferably 1.5 μm to 7 μm, to achieve sufficient magnetic properties. It should be noted that the “mean particle size” of a powder refers herein to an FSSS particle size unless otherwise stated.\n\n[0009]A rapidly solidified alloy powder obtained in this manner is typically processed into compacts by a uniaxial compacting process. Due to its manufacturing method, the rapidly solidified alloy powder has a narrow particle size distribution and achieves a bad fill density (i.e., cannot fill the cavity to a desired fill density), which are both problems.\n\n[0010]Thus, to improve the fill density of the rapidly solidified alloy powder, various countermeasures have been proposed. For example, Japanese Patent Application Laid-Open Publication No. 2000-219942 describes that if a rapidly solidified alloy, including 1 vol % to 30 vol % of chilled texture with particle sizes of 3 μm or less, is made by a roller rapid cooling process and then pulverized to obtain a rapidly solidified alloy powder, then the fill density can be increased and the sintering temperature can be decreased compared with conventional ones.\n\n[0011]It should be noted that the “chilled texture” is a crystalline phase to be formed near the surface of a chill roller during an initial stage in which a melt of an R—Fe—B based rare-earth alloy has just contacted with the surface of a cooling member (e.g., the chill roller) of a rapid cooling system and started to solidify. Compared with a columnar texture (or dendrite texture) to be formed on and after that initial stage of the cooling and solidification process, the chilled texture has a more isotropic (or isometric) and finer structure. That is to say, the chilled texture is produced when the melt is rapidly cooled and solidified on the surface of the roller.\n\nDISCLOSURE OF INVENTION\n\n[0012]However, the chilled texture has a magnetically isotropic fine structure. Accordingly, if a powder of a rapidly solidified alloy includes a lot of chilled texture, then the magnetic properties of the resultant sintered magnet deteriorate.\n\n[0013]In order to overcome the problems described above, primary objects of the present invention are to provide a method of making a rare-earth rapidly solidified alloy powder, which includes substantially no chilled texture but achieves a higher fill density than a conventional one, and also provide a method for producing a rare-earth sintered magnet by using such a powder.\n\n[0014]A method of making a rare-earth alloy powder according to the present invention is used to produce a rare-earth sintered magnet, of which a main phase has a composition represented by R2T14A (where R is one of the rare-earth elements including Y; T is either Fe alone or a mixture of Fe and a transition metal element other than Fe; and A is either boron alone or a mixture of boron and carbon). The method includes the steps of: preparing a first rare-earth rapidly solidified alloy, which has a columnar texture with an average dendritic width falling within a first range, by subjecting a melt of a first rare-earth alloy with a first composition to a rapid cooling process; preparing a second rare-earth rapidly solidified alloy, which has a columnar texture with an average dendritic width that is smaller than that of the first rare-earth rapidly solidified alloy and that falls within a second range, by subjecting a melt of a second rare-earth alloy with a second composition to the rapid cooling process; making a first rare-earth alloy powder by pulverizing the first rare-earth rapidly solidified alloy; making a second rare-earth alloy powder by pulverizing the second rare-earth rapidly solidified alloy; and making a powder blend including the first and second rare-earth alloy powders, whereby the objects described above are achieved.\n\n[0015]In one embodiment, the first range is equal to or greater than the mean particle size of the first rare-earth alloy powder, and the second range- is less than the mean particle size of the second rare-earth alloy powder.\n\n[0016]The first range is preferably from 3 μm through 6 μm while the second range is preferably from 1.5 μm through 2.5 μm.\n\n[0017]A method of making a rare-earth alloy powder according to another embodiment includes the steps of: obtaining a first rare-earth alloy coarse powder by coarsely pulverizing the first rare-earth rapidly solidified alloy; obtaining a second rare-earth alloy coarse powder by coarsely pulverizing the second rare-earth rapidly solidified alloy; making a blended coarse powder by blending the first and second rare-earth alloy coarse powders together; and obtaining the powder blend having a mean particle size of 1 μm to 10 μm by finely pulverizing the blended powder.\n\n[0018]A method of making a rare-earth alloy powder according to another embodiment includes the steps of: making a first rare-earth powder having a mean particle size of 1 μm to 10 μm from the first rare-earth rapidly solidified alloy; making a second rare-earth powder having a mean particle size of 1 μm to 10 μm from the second rare-earth rapidly solidified alloy; and obtaining the powder blend by blending the first and second rare-earth powders together.\n\n[0019]The first and second rare-earth alloy powders included in the powder blend preferably have a volume percentage ratio of 95:5 through 60:40, more preferably 80:20 through 70:30.\n\n[0020]In another embodiment, the second rare-earth rapidly solidified alloy is made by a strip casting process.\n\n[0021]In another embodiment, the first rare-earth rapidly solidified alloy is made by a strip casting process.\n\n[0022]In another embodiment, the first rare-earth rapidly solidified alloy is made by a centrifugal casting process.\n\n[0023]In another embodiment, the first rare-earth rapidly solidified alloy includes 30 mass % to 32 mass % of R. In another embodiment, the second rare-earth rapidly solidified alloy includes 33.5 mass % to 35 mass % of R.\n\n[0024]A rare-earth sintered magnet producing method according to the present invention is a method for producing a rare-earth sintered magnet, of which a main phase has a composition represented by R2T14A (where R is one of the rare-earth elements including Y; T is either Fe alone or a mixture of Fe and a transition metal element other than Fe; and A is either boron alone or a mixture of boron and carbon). The method includes the steps of: preparing a rare-earth alloy powder by one of the methods described above; compacting a powder material, including the rare-earth alloy powder, thereby obtaining a compact; and sintering the compact, whereby the object described above are achieved.\n\nBRIEF DESCRIPTION OF DRAWINGS\n\n[0025]FIG. 1 is a micrograph showing a cross section of a rapidly solidified alloy including substantially no chilled texture.\n\n[0026]FIG. 2 is a micrograph showing a cross section of a rapidly solidified alloy including a chilled texture.\n\nBEST MODE FOR CARRYING OUT THE INVENTION\n\n[0027]Hereinafter, preferred embodiments of a method for producing an R—Fe—B based rare-earth sintered magnet according to the present invention will be described with reference to the accompanying drawings.\n\n[0028]In this description, the composition of the main phase of an R—Fe—B based sintered magnet is represented by a general formula R2T14A. This main phase has an R2T14A type (Nd2Fe14B type) crystal structure (tetragonal).\n\n[0029]In this formula, R is one of the rare-earth elements (including Y), T is either Fe alone or a mixture of Fe and at least one transition metal element other than Fe, and A is either boron alone or a mixture of boron and carbon. It should be noted that the rare-earth element R preferably includes at least one light rare-earth element such as Nd or Pr and preferably further includes at least one heavy rare-earth element selected from the group consisting of Dy, Ho and Tb to ensure good coercivity. The light rare-earth element preferably accounts for 50 atomic % or more of the overall rare-earth element R. Examples of the non-Fe transition metal elements include Ti, V, Cr, Mn, Fe, Co and Ni. T preferably either consists essentially of Fe alone or consists mostly of Fe, a portion of which is replaced with at least one of Ni and Co.\n\n[0030]To achieve good magnetic properties, the overall composition of the sintered magnet preferably includes 25 mass % to 40 mass % of R, 0.6 mass % to 1.6 mass % of A, and T and very small amounts of additives (and inevitably contained impurities) as the balance. The very small amounts of additives preferably include at least one element selected from the group consisting of Al, Cu, Ga, Cr, Mo, V, Nb and Mn. The total amount of those additives introduced is preferably at most 1 mass % of the overall magnet.\n\n[0031]The present inventors analyzed the relationship between the powder fill density and texture of a rapidly solidified alloy from various angles to make the following discoveries, which formed the basis of the present invention.\n\n[0032]A melt of a rare-earth alloy material having the desired composition described above is prepared and rapidly cooled and solidified to make a rapidly solidified alloy. In this process, the resultant rapidly solidified alloy may have any of various textures depending on that composition and/or specific conditions of the rapid cooling process.\n\n[0033]For example, in making a rapidly solidified alloy by a strip casting process (see, for example, U.S. Pat. No. 5,666,635, the entire contents of which are hereby incorporated by reference), if the circumferential velocity of the chill roller is relatively high, then a structure with a chilled texture such as that shown in FIG. 2 is formed. The cross-sectional micrograph of the rapidly solidified alloy shown in FIG. 2 includes about 10 vol % of chilled texture.\n\n[0034]On the other hand, if the circumferential velocity of the roller is relatively low, then a structure consisting essentially of a dendrite texture (i.e., columnar texture or columnar crystals) alone and including substantially no chilled texture is formed as shown in FIG. 1. Also, even if a number of structures each consist essentially of the dendrite texture, the dendritic widths thereof are changeable with the circumferential velocity of the roller. Specifically, the lower the circumferential velocity, the broader the dendritic width.\n\n[0035]Such a difference in texture between rapidly solidified alloys also depends on the composition of the alloy. For example, when a number of alloys were compared on the same rapid cooling conditions (e.g., at the same chill roller circumferential velocity), the higher the R content of the alloy, the narrower the dendritic width thereof tended to be.\n\n[0036]A number of rapidly solidified alloys with mutually different textures were obtained in this manner. Then, each of those alloys was subjected to pulverization, compaction and sintering process steps under predetermined conditions, thereby making a sintered magnet. The magnetic properties of the resultant sintered magnets were evaluated and the fill densities of the alloy powders that were subjected to the compaction process were estimated. As a result, the present inventors discovered that if a plurality of alloy powders, made from rapidly solidified alloys with mutually different dendritic widths, were blended and used, then the fill density of the blended alloy powder increased and the magnetic properties of the resultant sintered magnet improved. This is believed to be because if those rapidly solidified alloys with mutually different dendritic widths are pulverized, then powders with different particle size distributions corresponding to the respective dendritic widths are obtained, and therefore, the particle size distribution of the blended powder broadens. This would also be because the powder particles, made from the rapidly solidified alloys with mutually different dendritic widths, have different aspect ratios. For example, by controlling the dendritic widths of the two rapidly solidified alloys, making up the single blended powder, such that one of the two rapidly solidified alloys has an average dendritic width equal to or greater than the mean particle size thereof and that the other rapidly solidified alloy has an average dendritic width less than the mean particle size thereof, a powder, made up of two groups of particles with mutually different aspect ratios, can be obtained.\n\n[0037]It should be noted that the dendritic width, characterizing such a rapidly solidified alloy, is supposed herein to be the average of the two different dendritic widths (which will be referred to herein as the “average dendritic width”). The average dendritic width was obtained by counting the number of dendrites included within a certain range (with a width of 20 μm to 50 μm, for example) and calculating the average. Such a method is sometimes called a “line segment method”. The number of samples was supposed to be at least five.\n\n[0038]A method of making a rare-earth alloy powder according to the present invention includes the steps of: (a) preparing a first rare-earth rapidly solidified alloy, which has a columnar texture with an average dendritic width falling within a first range, by subjecting a melt of a first rare-earth alloy with a first composition to a rapid cooling process; (b) preparing a second rare-earth rapidly solidified alloy, which has a columnar texture with an average dendritic width that is smaller than that of the first rare-earth rapidly solidified alloy and that falls within a second range, by subjecting a melt of a second rare-earth alloy with a second composition to the rapid cooling process; (c) making a first rare-earth alloy powder by pulverizing the first rare-earth rapidly solidified alloy; (d) making a second rare-earth alloy powder by pulverizing the second rare-earth rapidly solidified alloy; and making a powder blend including the first and second rare-earth alloy powders.\n\n[0039]The first range is preferably from 3 μm through 6 μm while the second range is preferably from 1.5 μm through 2.5 μm. The reasons are as follows. Specifically, if the average dendritic width of the first rare-earth alloy powder exceeded 6 μm, then the coercivity might decrease unfavorably. However, if the average dendritic width were less than 3 μm, then the fill density might decrease, which is not beneficial, either. On the other hand, if the average dendritic width of the second rare-earth alloy powder exceeded 2.5 μm, then the fill density and/or the sinterability might decrease unfavorably. However, if the average dendritic width were less than 1.5 μm, then it would be difficult to produce a uniformly texture.\n\n[0040]The average dendritic width of the first rare-earth alloy powder is preferably defined equal to or greater than the mean particle size thereof, but the average dendritic width of the second rare-earth alloy powder is preferably defined less than the mean particle size thereof. With these settings, the aspect ratio of particles of the first rare-earth alloy powder should be different from that of particles of the second rare-earth alloy powder, and therefore, the fill density of their blend should improve. This is particularly effective if the mean particle sizes of the first and second rare-earth alloy powders are substantially equalized with each other.\n\n[0041]The first and second rare-earth alloy powders included in the blended powder preferably have a volume percentage ratio of 95:5 through 60:40, more preferably from 80:20 through 70:30. This is because if the blending ratio fell out of any of these ranges, the fill density could not be increased sufficiently. Optionally, not only the first and second rare-earth alloy powders but also a third rare-earth alloy powder with a different average dendritic width may be blended together.\n\n[0042]The rapidly solidified alloys with different average dendritic widths may be obtained by changing the rapid cooling rates, for example. When a strip casting process is adopted, the rapid cooling rate may be adjusted by changing the circumferential velocity of the chill roller, for example. The strip casting process excels in mass productivity, which is very beneficial. The rapidly solidified alloy with a relatively broad dendritic width may also be made by a centrifugal casting process resulting in a relatively low rapid cooling rate.\n\n[0043]Alternatively, the rapidly solidified alloys with different average dendritic widths may also be obtained by changing the compositions of the alloy materials. It is naturally possible to adjust both the alloy material composition and the rapid cooling rate alike. For example, when the rapidly solidified alloys are made by a strip casting process, the first rare-earth rapidly solidified alloy preferably includes 30 mass % to 32 mass % of R, while the second rare-earth rapidly solidified alloy preferably includes 33.5 mass % to 35 mass % of R. If the compositions of the first and second rare-earth alloys fell out of these ranges, then it would be difficult to obtain rapidly solidified alloys with the desired dendritic widths.\n\n[0044]The blending process step for obtaining the blend of first and second rare-earth alloy powders, obtained from the rapidly solidified alloys with different average dendritic widths, may be carried out at an appropriate point in time. Each of the rapidly solidified alloys is typically a flake and needs to go through a two-stage pulverization process (i.e., a coarse pulverization process step and a fine pulverization process step) before the alloy powder to be subjected to the compaction process step is obtained. As to this pulverization process, the rapidly solidified alloys may be blended together at any time. That is to say, it does not matter if it is when the rapidly solidified alloys are still flakes, after the rapidly solidified alloy flakes have been coarsely pulverized into coarse powders, or after the coarse powders have been finely pulverized into fine powders (corresponding to the first and second rare-earth alloy powders described above).\n\n[0045]Nevertheless, to minimize the oxidation of the alloy materials, not so much the fine powders as the alloy flakes or coarse powders are preferably blended together. In that case, the blending process step and the pulverization process step may be carried out at the same time. Naturally, before the blending ratio is determined, the compositions of the respective rare-earth alloy materials (in the form of alloy flakes, coarse powders or fine powders) are preferably analyzed.\n\n[0046]The alloy powder to be eventually compacted preferably has a mean particle size of about 1 μm to about 10 μm, more preferably 1.5 μm to 7 μm. To minimize the oxidation and/or improve the flowability or compactibility, the surface of the rapidly solidified alloy powder may be coated with a lubricant if necessary. It is preferable that the lubricant is added during the process step of finely pulverizing the rapidly solidified alloy coarse powder. As the lubricant, a liquid lubricant consisting essentially of a fatty acid ester can be used effectively.\n\n[0047]A compact is made by compacting the blended powder thus obtained by a known compaction method. Then, the compact is processed by known methods to complete a sintered magnet.\n\n[0048]The rapidly solidified alloy powder (blended powder) may be compacted (e.g., uniaxially compacted and compacted) with a motorized press at a pressure of 1.5 ton/cm2 (i.e., 150 MPa) while being aligned under a magnetic field of about 1.5 T, for example. In this process step, when the cavity of the press machine is filled with the rapidly solidified alloy powder, a fill density higher than the conventional one is achieved because the rapidly solidified alloy powder of this preferred embodiment of the present invention has excellent loadability. Accordingly, a sintered body with a predetermined density can be obtained even at a relatively low temperature. That is to say, since it is possible to prevent the crystal grains from growing excessively during the sintering process step, a sintered magnet with higher coercivity than a conventional one can be obtained.\n\n[0049]Next, the resultant compact is sintered at a temperature of about 1,000° C. to about 1,100° C. for approximately one to five hours within either an inert gas (such as rare gas or nitrogen gas) atmosphere (preferably at a reduced pressure) or a vacuum, for example. Subsequently, by subjecting the resultant sintered body to an aging treatment at a temperature of about 450° C. to about 800° C. for approximately one to eight hours, an R—Fe—B based alloy sintered body can be obtained. Optionally, in order to reduce the amount of carbon included in the sintered body and thereby improve the magnetic properties, the lubricant that covers the surface of the alloy powder may be heated and removed if necessary before the sintering process step. This lubricant removal process step may be carried out at a temperature of about 100° C. to about 600° C. for approximately three to six hours within a reduced pressure atmosphere, although these conditions may vary with the type of the lubricant used.\n\n[0050]Then, by magnetizing the resultant sintered body, a sintered magnet is completed. The magnetizing process step may be carried out at an arbitrary point in time after the sintering process step is over, and could be performed after the magnet has been embedded in a motor or any other device. The magnetizing magnetic field may have a strength of 2 MA/m or more, for example.\n\nEXAMPLES\n\n[0051]Hereinafter, a method for producing an R—Fe—B based sintered magnet according to the present invention will be described by way of specific examples. However, the present invention is in no way limited to the following specific examples.\n\n[0052]A first rare-earth alloy may have a composition including 31.3 mass % of Nd+Pr+Dy (of which 1.2 mass % to 2.0 mass % is Dy and the rest is Nd and Pr), 1.0 mass % of B, 0.9 mass % of Co, 0.2 mass % of Al, 0.1 mass % of Cu, and Fe and inevitably contained impurities as the balance. The first rare-earth alloy with this composition was melted at about 1,350° C., and a rapidly solidified alloy (alloy flakes) was made from the resultant molten alloy by a strip casting process. By setting the circumferential velocity of the chill roller to 60 m/min, alloy flakes with a thickness of about 0.3 mm were obtained. When observing the cross section of these alloy flakes with a microscope, the present inventors confirmed that the rapidly solidified alloy included substantially no chilled texture and consisted essentially of columnar crystals alone. The average dendritic width was about 4 μm.\n\n[0053]On the other hand, a second rare-earth alloy may have a composition including 34.5 mass % of Nd+Pr+Dy (of which 1.0 mass % to 2.0 mass % is Dy and the rest is Nd and Pr), 1.0 mass % of B, 0.9 mass % of Co, 0.2 mass % of Al, 0.1 mass % of Cu, and Fe and inevitably contained impurities as the balance. The second rare-earth alloy with this composition was melted at about 1,350° C., and a rapidly solidified alloy (alloy flakes) was made from the resultant molten alloy by a strip casting process. By setting the circumferential velocity of the chill roller to 90 m/min, alloy flakes with a thickness of about 0.2 mm were obtained. When observing the cross section of these alloy flakes with a microscope, the present inventors confirmed that the rapidly solidified alloy included substantially no chilled texture and consisted essentially of columnar crystals alone. The average dendritic width was about 2 μm.\n\nExample No. 1\n\n[0054]In this example, the flakes of the first and second rare-earth alloys obtained as described above were coarsely pulverized separately by a hydrogen pulverization process, for example. The resultant coarse powders were blended together with a rocking mixer. The blending ratio was 75:25 on a volume basis.\n\n[0055]Then, the resultant blended coarse powder was finely pulverized with a jet mill to a mean particle size of about 3 μm. Optionally, before the coarse powders are blended together, those powders may be put into the jet mill by a predetermined amount so as to be blended together while being finely pulverized. Thereafter, about 0.3 mass % of a lubricant consisting essentially of a fatty acid ester was added thereto and mixed with them.\n\n[0056]The resultant blended powder was compacted and compacted (at a pressure of 1 ton/cm2 and under an aligning magnetic field of 1.5 T), thereby obtaining a compact (with dimensions of 18 mm vertically, 55 mm horizontally and 25 mm in the height (or pressing) direction). It should be noted that the aligning magnetic field was applied perpendicularly to the compacting direction. The compact thus obtained had a mass of 100 g.\n\n[0057]Thereafter, the compact was sintered at 1,050° C. for four hours within a reduced pressure Ar atmosphere and then subjected to an aging treatment at 500° C. for one hour. Subsequently, the sintered body was magnetized with a pulse magnetizer and then the magnetic properties of the resultant sintered magnet were evaluated with a search coil and a flux meter. The fill density was measured with a tap denser. As used herein, the “fill density” refers to a tap density obtained with the tap denser. The results are shown in the following Table 1.\n\nExample No. 2\n\n[0058]As in the first example described above, coarse powders of the first and second rare-earth alloys were obtained. Then, the coarse powders were finely pulverized separately with a jet mill, thereby obtaining first and second rare-earth alloy powders with a mean particle size of about 3 μm. By blending these fine powders at a ratio of 75:25 using a rocking mixer, a blended powder was obtained. Thereafter, a sintered magnet was obtained and the magnetic properties thereof were evaluated as in the first example described above.\n\nExample No. 3\n\n[0059]A sintered magnet was produced as in the first example described above except that the first rare-earth rapidly solidified alloy was made by a centrifugal casting process. The present inventors confirmed that the first rare-earth rapidly solidified alloy, made by the centrifugal casting process, included substantially no chilled texture and consisted essentially of columnar crystals only. The average dendritic width was about 20 μm.\n\nComparative Example No. 1\n\n[0060]The rare-earth alloy had a composition including 32.0 mass % of Nd+Pr+Dy (of which 1.0 mass % to 2.0 mass % was Dy and the rest was Nd and Pr), 1.0 mass % of B, 0.9 mass % of Co, 0.2 mass % of Al, 0.1 mass % of Cu, and Fe and inevitably contained impurities as the balance. The first rare-earth alloy with this composition was melted at about 1,350° C., and a rapidly solidified alloy (alloy flakes) was made from the resultant molten alloy by a strip casting process. By setting the circumferential velocity of the chill roller to 100 m/min, alloy flakes with a thickness of about 0.3 mm were obtained. When observing the cross section of these alloy flakes with a microscope, the present inventors confirmed that the rapidly solidified alloy included 10 vol % of chilled texture. Thereafter, as in the first example described above, the alloy flakes were coarsely and then finely pulverized to obtain a compact, which was then processed into a sintered magnet.\n\nComparative Example No. 2\n\n[0061]A rapidly solidified alloy (alloy flakes) was made by a strip casting process from a rare-earth alloy with the same composition as the first comparative example. By setting the circumferential velocity of the chill roller to 70 m/min, alloy flakes with a thickness of about 0.3 mm were obtained. When observing the cross section of these alloy flakes with a microscope, the present inventors confirmed that the rapidly solidified alloy included substantially no chilled texture. Thereafter, as in the first example described above, the alloy flakes were coarsely and then finely', '技术领域 \n\n [0001] 本发明涉及稀土类烧结磁体(更具体地,R-Fe-B基烧结磁体)的生产方法,还涉及制备用于生产这种稀土类稀土合金粉末的方法。 土烧结磁铁。 \n\n 背景技术 \n\n [0002] 稀土合金烧结磁体(永磁体)通常是通过将稀土合金粉末压制,烧结所得的粉末压块然后对烧结体进行时效处理而制造的。 当前广泛用于各种应用中的永磁体包括稀土钴基(通常是sa钴基)磁体和稀土铁硼基(通常是钕铁硼基)磁体。 其中,稀土-铁-硼基磁体(在本文中称为“ R-Fe-B基磁体”,其中R是包括Y的稀土元素之一,Fe是铁,并且 B是硼)越来越多地用于各种电子设备中。 这是因为基于R-Fe-B的磁体表现出最大能量乘积,该能量乘积高于各种其他类型的磁体中的任何一种,但是相对便宜。 \n\n [0003] 基于R-Fe-B的烧结磁体包括主要由四方R组成的主相 2 铁 14 B化合物(有时在本文中称为“ R 2 铁 14 B型晶体层”),例如包含Nd的R富相和B富相。 在基于R-Fe-B的烧结磁体中,一部分Fe可以被诸如Co或Ni的过渡金属替代,并且可以将一部分B由C替代。基于R-Fe-B的烧结磁体, 在美国专利No.5,235,641中描述了本发明的有效应用。 例如,第4,770,723号和第4,792,368号美国专利,其全部内容通过引用结合于此。 \n\n [0004] 在现有技术中,已经通过铸锭法将R-Fe-B基合金制备为用于这种磁体的材料。 通常,在锭铸法中,通过感应加热法使作为起始原料的稀土金属,电解铁和硼铁合金熔融,然后将这样得到的熔体在铸模中相对缓慢地冷却,从而制备出 固态合金(即合金锭)。 还已知一种通过Ca还原工艺(也称为“还原扩散工艺”)获得固态合金的方法。 \n\n [0005] 近来,诸如带材铸造工艺或离心铸造工艺的快速冷却工艺(也称为“熔融淬火工艺”)已经在本领域中引起了很多关注。 在快速冷却过程中,熔融合金与单个冷却辊,双冷却辊,旋转盘或旋转的圆柱形铸模的内表面接触并相对快速地冷却,从而制得凝固的合金 比熔融合金薄的合金锭。 \n\n [0006] 通过快速冷却工艺获得的固体合金在本文中将被称为“快速冷却合金(或快速凝固的合金)”,以便与通过常规铸锭工艺或Ca还原工艺获得的固体合金区分开来。 快速凝固的合金通常具有薄片或带状的形状(细条)。 \n\n [0007] 与通过常规的铸锭法或压铸法制得的固体合金(这种合金在本文中称为“锭合金”)相比,快速固化的合金在较短的时间内(即在冷却时)进行了淬火。 比率10 2 °C /秒至10 4 ℃/秒)。 因此,快速凝固的合金具有较细的组织和较小的晶粒尺寸。 另外,在快速凝固的合金中,其晶界具有更大的面积,并且富R相在晶界上宽而细地分散。 因此,快速凝固的合金在富R相的分散性方面也很优异。 因为快速凝固的合金具有这些有利的特征,所以可以由快速凝固的合金制成具有优异的磁性的磁体。 \n\n [0008] 通过例如通过氢粉碎工艺和/或各种机械研磨工艺(例如,使用球磨机或磨碎机)中的任何一种,将任何形式的快速凝固的合金粗粉碎,然后将其细粉碎,从而获得要压实的合金粉末。 例如,使用喷射式磨机通过干式粉碎法将所得的粗粉(平均粒径为10μm至500μm)粉碎。 为了获得足够的磁性,要压实的合金粉末的平均粒径优选为1μm至10μm,更优选为1.5μm至7μm。 应该注意的是,除非另有说明,否则粉末的“平均粒径”在本文中是指FSSS粒径。 \n\n [0009] 以这种方式获得的快速凝固的合金粉末通常通过单轴压制工艺加工成压坯。 由于其制造方法,快速凝固的合金粉末具有窄的粒度分布并实现不良的填充密度(即,不能将型腔填充至期望的填充密度),这都是问题。 \n\n [0010] 因此,为了提高快速凝固的合金粉末的填充密度,提出了各种对策。 例如,日本专利申请未审公开No.2000-219942描述了如果通过辊快速冷却制备包括1vol%至30vol%的粒径为3μm或更小的冷组织的快速凝固的合金, 与常规方法相比,先进行粉碎再粉碎,以获得快速固化的合金粉末,然后可以提高填充密度并降低烧结温度。 \n\n [0011] 应该注意的是,“冷组织”是在R-Fe-B基稀土合金的熔体刚刚与表面接触的初始阶段在冷辊表面附近形成的结晶相。 快速冷却系统的冷却构件(例如,冷却辊)的表面开始凝固。 与在冷却和凝固过程的初始阶段及之后形成的柱状纹理(或树枝状纹理)相比,冷却后的纹理具有更各向同性(或等轴测)和更精细的结构。 也就是说,当熔体在辊的表面上被迅速冷却并固化时,产生冷硬的质地。 \n\n 发明内容 \n\n [0012] 但是,冷却后的组织具有磁各向同性的精细结构。 因此,如果快速凝固的合金粉末具有许多冷硬组织,则所得烧结磁体的磁性能下降。 \n\n [0013] 为了克服上述问题,本发明的主要目的是提供一种制备稀土快速凝固的合金粉末的方法,该方法基本上不包括冷却的组织,但是比常规的具有更高的填充密度,并且 提供一种通过使用这种粉末来制造稀土类烧结磁体的方法。 \n\n [0014] 本发明的稀土合金粉末的制造方法用于制造主相具有以R表示的组成的稀土类烧结磁铁。 2 Ť 14 A(其中R是包括Y的稀土元素之一; T是单独的Fe或Fe和Fe以外的过渡金属元素的混合物; A是单独的硼或硼和碳的混合物)。 该方法包括以下步骤:通过使具有第一组成的第一稀土合金的熔体经受熔体制备第一稀土快速凝固合金,所述第一稀土快速凝固合金具有圆柱状织构且平均树枝晶宽度在第一范围内。 快速冷却过程; 通过使第二稀有金属熔化,制备第二种稀土快速凝固合金,该合金具有圆柱状织构,其平均树枝晶宽度小于第一稀土快速凝固合金的平均枝晶宽度并且落入第二范围内。 具有第二成分的稀土合金要快速冷却过程; 通过将第一稀土快速凝固合金粉碎而制成第一稀土合金粉末; 通过将第二稀土快速凝固合金粉碎而制成第二稀土合金粉末。 制备包含第一和第二稀土合金粉末的粉末混合物,从而实现上述目的。 \n\n [0015] 在一个实施方案中,第一范围等于或大于第一稀土合金粉末的平均粒径,并且第二范围小于第二稀土合金粉末的平均粒径。 \n\n [0016] 第一范围优选为3μm至6μm,而第二范围优选为1.5μm至2.5μm。 \n\n [0017] 根据另一个实施方案的制备稀土合金粉末的方法包括以下步骤:通过将第一稀土快速凝固合金粗粉碎而获得第一稀土合金粗粉;和 通过将第二稀土快速凝固合金粗粉碎而获得第二稀土合金粗粉。 通过将第一和第二稀土合金粗粉混合在一起,制成混合粗粉; 通过将混合粉末细粉碎,获得平均粒径为1μm至10μm的粉末混合物。 \n\n [0018] 根据另一个实施方案的制备稀土合金粉末的方法包括以下步骤:从所述第一稀土快速凝固合金制备平均粒径为1μm至10μm的第一稀土粉末; 从所述第二稀土快速凝固合金制备平均粒径为1μm至10μm的第二稀土粉末; 通过将第一和第二稀土粉末混合在一起获得粉末混合物。 \n\n [0019] 包含在粉末混合物中的第一和第二稀土合金粉末的体积百分比优选为95:5至60:40,更优选为80:20至70:30。 \n\n [0020] 在另一个实施例中,第二稀土快速凝固合金通过带式铸造工艺制成。 \n\n [0021] 在另一个实施例中,第一稀土快速凝固合金通过带式铸造工艺制成。 \n\n [0022] 在另一个实施例中,第一稀土快速凝固合金是通过离心铸造工艺制成的。 \n\n [0023] 在另一个实施方案中,第一稀土快速固化合金包含30质量%至32质量%的R。在另一个实施方案中,第二稀土快速固化合金包含R 33.5质量%至35质量%。 \n\n [0024] 本发明的稀土类烧结磁铁的制造方法是主相具有以R表示的组成的稀土类烧结磁铁的制造方法。 2 Ť 14 A(其中R是包括Y的稀土元素之一; T是单独的Fe或Fe和Fe以外的过渡金属元素的混合物; A是单独的硼或硼和碳的混合物)。 该方法包括以下步骤:通过上述方法之一来制备稀土合金粉末;以及 压实包括稀土合金粉末的粉末材料,从而获得压块; 烧结体,从而实现上述目的。 \n\n 附图说明 \n\n [0025] 图。 附图简述图1是显示基本不包括冷组织的快速凝固合金的横截面的显微照片。 \n\n [0026] 图。 图2是显示包括凝固组织的快速凝固合金的横截面的显微照片。 \n\n 实施本发明的最佳模式 \n\n [0027] 在下文中,将参照附图描述根据本发明的用于制造基于R-Fe-B的稀土烧结磁体的方法的优选实施方式。 \n\n [0028] 在本说明书中,R-Fe-B类烧结磁体的主相的组成由通式R表示。 2 Ť 14 A.这个主要阶段有一个R 2 Ť 14 A型(钕 2 铁 14 B型)晶体结构(四边形)。 \n\n [0029] 在该式中,R为稀土元素(包括Y)中的一种,T为单独的Fe或Fe与Fe以外的至少一种过渡金属元素的混合物,A为单独的硼或硼的混合物。 和碳。 应当注意,稀土元素R优选包括至少一种轻稀土元素,例如Nd或Pr,并且优选还包括至少一种选自Dy,Ho和Tb的重稀土元素。 确保良好的矫顽力。 轻稀土元素优选占整个稀土元素R的50原子%以上。非Fe过渡金属元素的实例包括Ti,V,Cr,Mn,Fe,Co和Ni。  T优选要么基本上仅由Fe组成,要么主要由Fe组成,其一部分被Ni和Co中的至少一种代替。 \n\n [0030] 为了获得良好的磁性能,烧结磁体的整体组成优选包括25质量%至40质量%的R,0.6质量%至1.6质量%的A和T以及非常少量的添加剂(不可避免地包含杂质)作为添加剂。 余额。 极少量的添加剂优选包括选自Al,Cu,Ga,Cr,Mo,V,Nb和Mn的至少一种元素。 这些引入的添加剂的总量优选为整个磁体的至多1质量%。 \n\n [0031] 本发明人从各种角度分析了粉末填充密度与快速凝固的合金的织构之间的关系,以进行以下发现,这构成了本发明的基础。 \n\n [0032] 制备具有上述期望组成的稀土合金材料的熔体,并将其快速冷却并固化以制备快速固化的合金。 在该过程中,取决于快速冷却过程的组成和/或特定条件,所得的快速固化合金可具有各种织构中的任何一种。 \n\n [0033] 例如,如果冷却辊的圆周速度相对较高,则在通过带材铸造法制造快速凝固的合金中(例如,参见美国专利号5,666,635,其全部内容通过引用结合于此)。  ,然后是具有冷纹理的结构,如图2所示。 形成2。 图1所示的快速凝固合金的横截面显微照片示于图1。  2包括约10体积%的冷纹理。 \n\n [0034] 另一方面,如果辊的圆周速度相对较低,则如图1所示,形成仅由树枝状织构(即,柱状织构或柱状晶体)组成且基本上不包括冷硬织构的结构。 同样,即使许多结构基本上都由树枝状纹理组成,其树枝状宽度也随辊的圆周速度而变化。 具体而言,圆周速度越低,树突宽度越宽。 \n\n [0035] 快速凝固的合金之间的这种质地差异还取决于合金的成分。 例如,当在相同的快速冷却条件下(例如,在相同的冷却辊圆周速度下)比较多种合金时,合金的R含量越高,其枝晶宽度趋于越窄。 \n\n [0036] 以这种方式获得了许多具有相互不同的组织的快速凝固的合金。 然后,将这些合金中的每一种在预定条件下进行粉碎,压实和烧结处理步骤,从而制成烧结磁体。 评估所得烧结磁体的磁性能,并评估进行压制处理的合金粉末的填充密度。 结果,本发明人发现,如果混合并使用由树枝状宽度彼此不同的快速凝固的合金制成的多种合金粉末,则混合合金粉末的填充密度增加,并且烧结所得的磁性能。 磁铁改善了。 据信这是因为,如果将那些具有彼此不同的树枝状宽度的快速凝固的合金粉碎,则获得具有对应于各个树枝状宽度的不同粒径分布的粉末,因此,混合粉末的粒径分布变宽。 这也是因为由具有彼此不同的树枝状宽度的快速凝固的合金制成的粉末颗粒具有不同的纵横比。 例如,通过控制两种快速凝固的合金的树枝状宽度,组成单一共混粉末,使得两种快速凝固的合金之一的平均树枝状宽度等于或大于其平均粒径,而另一种 快速凝固的合金的平均树突宽度小于其平均粒径,可获得由纵横比互不相同的两组颗粒组成的粉末。 \n\n [0037] 应当注意,表征这种快速凝固的合金的树枝状宽度在本文中被认为是两种不同树枝状宽度的平均值(在本文中将其称为“平均树枝状宽度”)。 通过对一定范围(例如,宽度为20μm至50μm)内包括的树枝状晶体的数量进行计数并计算平均值,来获得平均树枝状晶体宽度。 有时将这种方法称为“线段法”。 样本数量应至少为五个。 \n\n [0038] 根据本发明的制备稀土合金粉末的方法包括以下步骤:(a)通过如下方法制备第一稀土快速固化合金,所述第一稀土快速凝固合金具有圆柱状织构,其平均枝晶宽度在第一范围内。 对具有第一成分的第一稀土合金的熔体进行快速冷却过程;  (b)制备第二种稀土快速凝固合金,通过使其熔化,所述第二种稀土快速凝固合金的柱状组织的平均枝晶宽度小于所述第一种稀土快速凝固合金的平均枝晶宽度并且在第二范围内。 具有第二成分的第二稀土合金,用于快速冷却过程;  (c)通过将第一稀土快速凝固合金粉碎而制成第一稀土合金粉末;  (d)通过将第二稀土快速凝固的合金粉碎而制成第二稀土合金粉末; 制成包含第一和第二稀土合金粉末的粉末混合物。 \n\n [0039] 第一范围优选为3μm至6μm,而第二范围优选为1.5μm至2.5μm。 原因如下。 具体地,如果第一稀土合金粉末的平均树枝晶宽度超过6μm,则矫顽力可能不利地降低。 但是,如果平均树突宽度小于3μm,则填充密度可能降低,这也是不利的。 另一方面,如果第二稀土合金粉末的平均枝晶宽度超过2.5μm,则填充密度和/或烧结性可能会不利地降低。 然而,如果平均树突宽度小于1.5μm,则将难以产生均匀的织构。 \n\n [0040] 优选将第一稀土合金粉末的平均树枝状宽度定义为等于或大于其平均粒径,但是优选将第二稀土合金粉末的平均树枝状宽度定义为小于其平均粒径。 通过这些设置,第一稀土合金粉末的颗粒的长径比应与第二稀土合金粉末的颗粒的长径比不同,因此,它们的混合物的填充密度应提高。 如果第一和第二稀土合金粉末的平均粒径彼此基本相等,则这特别有效。 \n\n [0041] 混合粉末中包括的第一和第二稀土合金粉末的体积百分比优选为95:5至60:40,更优选为80:20至70:30。 这是因为如果混合比落在这些范围中的任何一个之外,则填充密度不能充分增加。 任选地,不仅可以将第一和第二稀土合金粉末混合,而且可以将具有不同平均树突宽度的第三稀土合金粉末混合在一起。 \n\n [0042] 例如,可以通过改变快速冷却速率来获得具有不同的平均枝晶宽度的快速凝固的合金。 当采用带钢铸造工艺时,例如,可以通过改变冷却辊的圆周速度来调节快速冷却速率。 薄带连铸工艺在批量生产方面表现出色,这是非常有益的。 具有相对较宽的树枝状宽度的快速凝固的合金也可以通过离心铸造工艺制成,从而导致相对较低的快速冷却速率。 \n\n [0043] 或者,也可以通过改变合金材料的组成来获得具有不同的平均枝晶宽度的快速凝固的合金。 当然可以同时调节合金材料的成分和快速冷却速率。 例如,在通过薄带连铸法制造快速凝固合金的情况下,第一稀土类快速凝固合金优选含有30质量%〜32质量%的R,第二稀土类快速凝固合金优选含有33.5质量%。 如果第一和第二稀土合金的组成不在这些范围内,则将难以获得具有所需枝晶宽度的快速凝固的合金。 \n\n [0044] 可以在适当的时间进行用于获得由具有不同的平均枝晶宽度的快速凝固的合金获得的第一和第二稀土合金粉末的混合物的混合工艺步骤。 每种快速凝固的合金通常是薄片,并且在获得要进行压实处理步骤的合金粉末之前,需要经历两阶段的粉碎处理(即,粗粉碎处理步骤和细粉碎处理步骤)。  。 关于该粉碎过程,可以将快速固化的合金随时混合在一起。 就是说,快速凝固的合金片仍是片状,快速凝固的合金片被粗粉碎成粗粉之后,还是将粗粉细化成细粉之后(对应于 (上述的第一和第二稀土合金粉末)。 \n\n [0045] 然而,为了使合金材料的氧化最小化,优选将细粉而不是合金薄片或粗粉混合在一起。 在这种情况下,可以同时进行混合工序和粉碎工序。 自然地,在确定混合比例之前,优选地分析各个稀土合金材料(合金薄片,粗粉或细粉的形式)的组成。 \n\n [0046] 最终要压实的合金粉末的平均粒径优选为约1μm至约10μm,更优选为1.5μm至7μm。 为了使氧化最小化和/或改善流动性或致密性,如果需要,可以在快速固化的合金粉末的表面上涂覆润滑剂。 优选在将快速凝固的合金粗粉微粉碎的处理步骤中添加润滑剂。 作为润滑剂,可以有效地使用主要由脂肪酸酯组成的液体润滑剂。 \n\n [0047] 通过以已知的压紧方法压实由此获得的混合粉末来制造压块。 然后,通过已知方法加工压块以完成烧结磁体。 \n\n [0048] 可以使用电动压机在1.5吨/厘米的压力下压实(例如单轴压实和压实)快速凝固的合金粉末(混合粉末) 2  例如在约1.5T的磁场下对准时(例如150MPa)。 在该工艺步骤中,当压机的腔体填充有快速凝固的合金粉末时,由于本发明的该优选实施方式的快速凝固的合金粉末具有优异的负载性,因此获得了比常规填充密度高的填充密度。 因此,即使在相对较低的温度下也可以获得预定密度的烧结体。 就是说,由于可以防止在烧结工序中晶粒的过度生长,因此可以得到矫顽力比以往高的烧结磁铁。 \n\n [0049] 接下来,在惰性气体(例如稀有气体或氮气)气氛中(优选在减压下)在约1,000℃至约1,100℃的温度下将所得压块烧结约1至5小时。 或例如真空。 随后,通过在约450℃至约800℃的温度下对所得的烧结体进行时效处理约一至八小时,可以获得R-Fe-B基合金烧结体。 任选地,为了减少包含在烧结体中的碳的量并由此改善磁性,可以在烧结工艺步骤之前根据需要加热和去除覆盖合金粉末表面的润滑剂。 该润滑剂去除工艺步骤可以在减压气氛中在约100℃至约600℃的温度下进行约3至6小时,尽管这些条件可以随所用润滑剂的类型而变化。 \n\n [0050] 然后,通过对所得的烧结体进行磁化,从而完成了烧结磁体。 磁化处理步骤可以在烧结处理步骤结束之后的任意时间点进行,并且可以在磁体已经嵌入电动机或任何其他装置中之后执行。 磁化磁场的强度例如可以为2MA / m以上。 \n\n 例子 \n\n [0051] 在下文中,将通过具体实例描述根据本发明的用于制造基于R-Fe-B的烧结磁体的方法。 但是,本发明决不限于以下具体实施例。 \n\n [0052] 第一稀土合金可以具有包括31.3质量%的Nd + Pr + Dy(其中1.2质量%至2.0质量%是Dy,其余是Nd和Pr),1.0质量%的B,0.9质量%的组成。  Co,0.2质量%的Al,0.1质量%的Cu和Fe,不可避免地含有杂质作为余量。 将具有该组成的第一稀土合金在约1350℃下熔融,并通过流延铸造法由所得的熔融合金制成快速凝固的合金(合金薄片)。 通过将冷却辊的圆周速度设置为60m / min,获得了厚度为约0.3mm的合金薄片。 当用显微镜观察这些合金薄片的横截面时,本发明人证实了快速固化的合金基本上不包括冷硬组织并且基本上仅由柱状晶体组成。 树突的平均宽度为约4μm。 \n\n [0053] 另一方面,第二稀土合金可以具有包括34.5质量%的Nd + Pr + Dy(其中1.0质量%至2.0质量%是Dy,其余是Nd和Pr),1.0质量%的Nd + Pr + Dy的组成。  B,0.9质量%的Co,0.2质量%的Al,0.1质量%的Cu和Fe作为余量不可避免地含有杂质。 将具有这种组成的第二稀土合金在约1350℃下熔融,并通过流延铸造法由所得的熔融合金制成快速凝固的合金(合金薄片)。 通过将冷却辊的圆周速度设置为90m / min,获得厚度约为0.2mm的合金薄片。 当用显微镜观察这些合金薄片的横截面时,本发明人证实了快速固化的合金基本上不包括冷硬组织并且基本上仅由柱状晶体组成。 树突的平均宽度为约2μm。 \n\n 示例1 \n\n [0054] 在该实施例中,例如,通过氢粉碎工艺分别将如上所述获得的第一和第二稀土合金的薄片粗粉碎。 用摇动混合器将所得的粗粉混合在一起。 基于体积的混合比为75:25。 \n\n [0055] 然后,将所得的混合粗粉用喷射式粉碎机细粉碎至平均粒径为约3μm。 任选地,在将粗粉混合在一起之前,可以将那些粉末以预定量放入喷射式粉碎机中,以便在被细粉碎的同时将它们混合在一起。 之后,向其中添加约0.3质量%的基本上由脂肪酸酯组成的润滑剂,并与它们混合。 \n\n [0056] 将所得的混合粉末压实并压实(在1吨/厘米2的压力下 2  并在1.5 T的对准磁场下),从而获得了紧凑型(垂直尺寸为18毫米,水平尺寸为55毫米,高度(或压制)方向为25毫米)。 应当注意,垂直于压紧方向施加对准磁场。 由此获得的压块的质量为100g。 \n\n [0057] 之后,在减压的Ar气氛中在1050℃下将成型体烧结4小时,然后在500℃下进行时效处理1小时。 随后,用脉冲磁化器将烧结体磁化,然后用搜索线圈和通量计评估所得烧结磁体的磁性能。 填充密度是用振实密度计测量的。 如本文中所使用的,“填充密度”是指用振实密度更大的振实密度。 结果示于下表1。 \n\n 示例2 \n\n [0058] 与上述第一实施例相同,获得了第一和第二稀土合金的粗粉。 然后,将粗粉末分别用喷射磨机细粉碎,从而获得平均粒径为约3μm的第一和第二稀土合金粉末。 通过使用摇动混合器以75∶25的比例混合这些细粉,获得了混合粉。 之后,获得烧结磁体,并且如上述第一示例中那样评价其磁性能。 \n\n 示例3 \n\n [0059] 除了通过离心铸造法制造第一稀土类快速凝固合金以外,与上述第一实施例同样地制造烧结磁铁。 本发明人证实,通过离心铸造法制备的第一稀土快速凝固合金基本上不包括冷硬组织,并且基本上仅由柱状晶体组成。 树突的平均宽度为约20μm。 \n\n 比较例1 \n\n [0060] 稀土合金的组成为:Nd + Pr + Dy 32.0质量%(其中Dy为1.0质量%〜2.0质量%,其余为Nd和Pr),B为1.0质量%,Co为0.9质量%。  Al,0.2质量%,Cu和Fe 0.1质量%,不可避免地含有杂质。 将具有该组成的第一稀土合金在约1350℃下熔融,并通过流延铸造法由所得的熔融合金制成快速凝固的合金(合金薄片)。 通过将冷却辊的圆周速度设定为100m / min,可获得厚度约为0.3mm的合金薄片。 当用显微镜观察这些合金薄片的横截面时,本发明人证实了快速固化的合金包括10vol%的冷组织。 之后,与上述第一实施例相同,将合金薄片粗粉碎然后细粉碎以获得压块,然后将其加工成烧结磁体。 \n\n 比较例2 \n\n [0061] 通过带钢铸造工艺,由具有与第一比较例相同组成的稀土合金制成快速凝固的合金(合金薄片)。 通过将冷却辊的圆周速度设置为70m / min,获得了厚度约为0.3mm的合金薄片。 当用显微镜观察这些合金薄片的横截面时,本发明人证实了快速固化的合金基本上不包括冷硬组织。 之后,与上述第一实施例相同,将合金薄片粗粉碎然后细粉碎以获得压块,然后将其加工成烧结磁体。 \n\n 比较例3 \n\n [0062] 通过离心铸造法,由与第一比较例相同组成的稀土合金制成快速凝固的合金。 当用显微镜观察该快速凝固的合金的横截面时,本发明人证实了该快速凝固的合金基本上不包括冷硬组织,而基本上仅由柱状晶体组成。 树突的平均宽度为约25μm。 之后,与上述第一实施例相同,将快速凝固的合金粗化然后细粉碎以获得压块,然后将其加工成烧结磁体。 \n\n [0063] \n\n   表格1  比较  例子1 例子2 例子3 Ex. 1 比较 例如 2 比较 例如 3  Br 1.37 1.37 1.36 1.34 1.33 1.33  (T)  H J 1233.5 1233.5 1074.3 1193.7 1114.1 994.8  (kA / m) BH  最高  362 362 358 358 354 350 (千焦/米 3 )   填 2.1 2.2 2.2 2.0 2.0 2.0  密度 (克/厘米 3 )   烧结 1,040 1,040 1,060 1,050 1,040 1,080  温度  (°C) \n\n [0064] 从表1所示的结果可以看出,实施例1至3的稀土合金粉末(混合粉末)比对比例1至3的非混合粉末具有更高的填充密度。 即使在较低的烧结温度下烧结,实施例1-3的稀土合金粉末仍达到7.5g / cm 2的所需密度。 3  高矫顽力H  J 。 \n\n [0065] 使用离心铸造法制得的第一稀土类快速凝固合金(平均树枝晶宽度为约20μm)的实施例3没有表现出使用第一稀有合金的实施例1和2的良好的磁性能。 带钢铸造工艺制成的稀土快速凝固合金(平均枝晶宽度约为4μm)。 因此,可以看出,带钢铸造工艺是用于制造快速凝固的合金的优选方法。 \n\n [0066] 接下来,将描述本发明人为了限定平均树突宽度的优选范围而进行的实验结果。 \n\n [0067] 在具有与针对本发明的具体实施例描述的成分相同的合金的情况下,用作第一和第二稀土合金,但随着带钢铸造工艺条件的改变,第一和第二稀土快速凝固合金彼此不同。 获得树枝状宽度。 各个样品的平均树枝晶宽度示于下表2中。在以这种方式获得第一和第二稀土快速凝固的合金之后,如上述第二示例中那样制造烧结磁体,除了设定烧结温度之外。 如以下表3所示。本发明人评价了所得烧结磁体的磁性能。 结果也显示在下表3中。 \n\n [0068] \n\n    表2  平均树突宽度 平均树突宽度 共1  ST 稀土 共2  nd 稀土迅速   样品编号 快速凝固合金 凝固合金  1 6微米 1.5微米  2 6微米 2.5微米  3 3微米 1.5微米  4 8微米 2微米 \n\n [0069] \n\n    表3  样品1 样品2 样品3 样品4 乙 r  (T)  1.38 1.38 1.37 1.38 H  J (kA / m)  1215.5 1215.3 1223.5 1154.0 BH  最高 (千焦/米 3 )  366 366 362 366  填充密度 2.2 2.2 2.2 2.2 (克/厘米 3 )   烧结温度 1,040 1,040 1,040 1,050  (°C) \n\n [0070] 如表3所示,第4稀土类快速凝固合金的第4枝晶平均宽度为8μm的样品No.4的矫顽力H较低。  J 比任何其他样本。 因此,为了获得足够的矫顽力,优选第一稀土类快速凝固合金的平均树枝晶宽度为6μm以下。 应该注意的是,第一稀土快速凝固合金的平均枝晶宽度越大,剩磁B越高。 r  往往是和矫顽力H越低  J 倾向于。 \n\n [0071] 只要第二稀土快速凝固合金的平均树枝晶宽度在1.5μm至2.5μm的范围内,则磁性能基本上没有明显的差异。 自然地,如果第一稀土合金粉末的平均树突宽度小于3μm,并且如果第二稀土合金粉末的平均树突宽度超过2.5μm,则填充密度应通过混合两种类型的合金来增加。 稀土合金粉末加在一起,将不再增加。 而且,作为各种实验的结果,本发明人发现难以获得平均树枝晶宽度小于1.5μm的稀土快速凝固合金。 因此,最小平均树突宽度为1.5μm。 \n\n [0072] 接下来,将描述通过使用与第二示例相同的第一和第二稀土合金粉末来找到最佳混合比范围(体积比)的实验结果。 下表4列出了第一和第二稀土合金粉末的体积比以及用振实密度仪测量的填充密度(振实密度): \n\n [0073] \n\n    表4  山姆 山姆  ple ple 样品 样品 样品 样品  5 6 7 8 9 10  体积比 95:5 80:20 70:30 60:40 50:50 30:70  (第一秒)  填充密度  2.1 2.2 2.2 2.1 1.9 1.8 (克/厘米 3 )  \n\n 其中,体积比是第一稀土合金粉末与第二稀土合金粉末的体积比。 \n\n [0074] 从表4所示的结果可以看出,第一稀土合金粉末与第二稀土合金粉末的体积比优选在95∶5至60∶40(特别是80∶80)的范围内。  20至70:30)。 尚不清楚为什么采用这样的混合比会提高填充密度。 但是,这样的体积比被认为有效地弥补了由第一稀土合金粉末与第二稀土合金粉末形成的间隙。 \n\n 工业适用性 \n\n [0075] 本发明提供了一种稀土快速凝固合金粉末的制造方法,该方法基本上不具有冷却的组织,但是比常规的具有更高的填充密度,并且还提供了一种通过使用这种方法制造稀土烧结磁体的方法。 一种粉末。');
INSERT INTO `os_patent_instruction_text` VALUES (13021, 22850, 'TECHNICAL FIELD \n\n[0001]The present invention relates to a method for producing a rare-earth sintered magnet (more particularly, an R-Fe-B based sintered magnet) and also relates to a method of making a rare-earth alloy powder for use to produce such a rare-earth sintered magnet.\n\nBACKGROUND ART \n\n[0002]A rare-earth alloy sintered magnet (permanent magnet) is normally produced by compacting a powder of a rare-earth alloy, sintering the resultant powder compact and then subjecting the sintered body to an aging treatment if necessary. Permanent magnets currently used extensively in various applications include rare-earth-cobalt based (typically samarium-cobalt based) magnets and rare-earth-iron-boron based (typically neodymium-iron-boron based) magnets. Among other things, the rare-earth-iron-boron based magnets (which will be referred to herein as \"R-Fe-B based magnets\", where R is one of the rare-earth elements including Y, Fe is iron, and B is boron) are used more and more often in various electronic appliances. This is because an R-Fe-B based magnet exhibits a maximum energy product, which is higher than any of various other types of magnets, and yet is relatively inexpensive.\n\n[0003]An R-Fe-B based sintered magnet includes a main phase consisting essentially of a tetragonal R 2 Fe 14 B compound (which will be sometimes referred to herein as an \"R 2 Fe 14 B type crystal layer\"), an R-rich phase including Nd, for example, and a B-rich phase. In the R-Fe-B based sintered magnet, a portion of Fe may be replaced with a transition metal such as Co or Ni and a portion of B may be replaced with C. An R-Fe-B based sintered magnet, to which the present invention is applicable effectively, is described in United States Patents Nos. 4,770,723 and 4,792,368, for example.\n\n[0004]In the prior art, an R-Fe-B based alloy has been prepared as a material for such a magnet by an ingot casting process. In an ingot casting process, normally, rare-earth metal, electrolytic iron and ferroboron alloy as respective start materials are melted by an induction heating process, and then the melt obtained in this manner is cooled relatively slowly in a casting mold, thereby preparing a solid alloy (i.e., alloy ingot). A method for obtaining a solid alloy by a Ca reduction process (which is also called a \"reduction diffusion process\") is also known.\n\n[0005]Recently, a rapid cooling process (which is also called a \"melt-quenching process\") such as a strip casting process or a centrifugal casting process has attracted much attention in the art. In a rapid cooling process, a molten alloy is brought into contact with, and relatively rapidly cooled by, a single chill roller, a twin chill roller, a rotating disk or the inner surface of a rotating cylindrical casting mold, thereby making a solidified alloy, which is thinner than an alloy ingot, from the molten alloy.\n\n[0006]A solid alloy obtained by a rapid cooling process will be referred to herein as a \"rapidly cooled alloy (or rapidly solidified alloy)\" so as to be easily distinguished from a solid alloy obtained by a conventional ingot casting process or Ca reduction process. The rapidly solidified alloy typically has the shape of a flake or a ribbon (thin strip).\n\n[0007]Compared to a solid alloy made by the conventional ingot casting process or die casting process (such an alloy will be referred to herein as an \"ingot alloy\"), the rapidly solidified alloy has been quenched in a shorter time (i.e., at a cooling rate of 10 2[0008]An alloy powder to be compacted is obtained by coarsely pulverizing a rapidly solidified alloy in any of these forms by a hydrogen pulverization process, for example, and/or any of various mechanical grinding processes (e.g., using a ball mill or attritor) and finely pulverizing the resultant coarse powder (with a mean particle size of 10 µm to 500 µm) by a dry pulverization process using a jet mill, for example. The alloy powder to be compacted preferably has a mean particle size of 1 µm to 10 µm, more preferably 1.5 µm to 7 µm, to achieve sufficient magnetic properties. It should be noted that the \"mean particle size\" of a powder refers herein to an FSSS particle size unless otherwise stated.\n\n[0009]A rapidly solidified alloy powder obtained in this manner is typically processed into compacts by a uniaxial compacting process. Due to its manufacturing method, the rapidly solidified alloy powder has a narrow particle size distribution and achieves a bad fill density (i.e., cannot fill the cavity to a desired fill density), which are both problems.\n\n[0010]Thus, to improve the fill density of the rapidly solidified alloy powder, various countermeasures have been proposed. For example, Japanese Patent Application Laid-Open Publication No. 2000-219942 describes that if a rapidly solidified alloy, including 1 vol% to 30 vol% of chilled texture with particle sizes of 3 µm or less, is made by a roller rapid cooling process and then pulverized to obtain a rapidly solidified alloy powder, then the fill density can be increased and the sintering temperature can be decreased compared with conventional ones.\n\n[0011]It should be noted that the \"chilled texture\" is a crystalline phase to be formed near the surface of a chill roller during an initial stage in which a melt of an R-Fe-B based rare-earth alloy has just contacted with the surface of a cooling member (e.g., the chill roller) of a rapid cooling system and started to solidify. Compared with a columnar texture (or dendrite texture) to be formed on and after that initial stage of the cooling and solidification process, the chilled texture has a more isotropic (or isometric) and finer structure. That is to say, the chilled texture is produced when the melt is rapidly cooled and solidified on the surface of the roller.\n\n[0012]A further manufacturing method of a permanent magnet is disclosed in US 5 595 608 A.\n\nDISCLOSURE OF INVENTION \n\n[0013]However, the chilled texture has a magnetically isotropic fine structure. Accordingly, if a powder of a rapidly solidified alloy includes a lot of chilled texture, then the magnetic properties of the resultant sintered magnet deteriorate.\n\n[0014]In order to overcome the problems described above, primary objects of the present invention are to provide a method of making a rare-earth rapidly solidified alloy powder, which includes substantially no chilled texture but achieves a higher fill density than a conventional one, and also provide a method for producing a rare-earth sintered magnet by using such a powder.\n\n[0015]A method of making a rare-earth alloy powder according to the present invention is as specified in claim 1.\n\n[0016]A preferred embodiment is set out in claim 2.\n\n[0017]A method of making a rare-earth alloy powder according to dependent claim 3 further includes the steps of: obtaining a first rare-earth alloy coarse powder by coarsely pulverizing the first rare-earth rapidly solidified alloy; obtaining a second rare-earth alloy coarse powder by coarsely pulverizing the second rare-earth rapidly solidified alloy; making a blended coarse powder by blending the first and second rare-earth alloy coarse powders together; and obtaining the powder blend having a mean particle size of 1 µm to 10 µm by finely pulverizing the blended powder.\n\n[0018]A method of making a rare-earth alloy powder according to dependent claim 4 includes the steps of: making a first rare-earth powder having a mean particle size of 1 µm to 10 µm from the first rare-earth rapidly solidified alloy; making a second rare-earth powder having a mean particle size of 1 µ m to 10 µm from the second rare-earth rapidly solidified alloy; and obtaining the powder blend by blending the first and second rare-earth powders together.\n\n[0019]Further preferred embodiments are set out in claims 5 to 10.\n\n[0020]A rare-earth sintered magnet producing method according to claim 11 is a method for producing a rare-earth sintered magnet, of which a main phase has a composition represented by R 2 T 14 A (where R is one of the rare-earth elements including Y; T is either Fe alone or a mixture of Fe and a transition metal element other than Fe; and A is either boron alone or a mixture of boron and carbon). The method includes the steps of: preparing a rare-earth alloy powder by one of the methods described above; compacting a powder material, including the rare-earth alloy powder, thereby obtaining a compact; and sintering the compact, whereby the object described above are achieved.\n\nBRIEF DESCRIPTION OF DRAWINGS \n\n[0021] FIG. 1 is a micrograph showing a cross section of a rapidly solidified alloy including substantially no chilled texture. FIG. 2 is a micrograph showing a cross section of a rapidly solidified alloy including a chilled texture. \n\nBEST MODE FOR CARRYING OUT THE INVENTION \n\n[0022]Hereinafter, preferred embodiments of a method for producing an R-Fe-B based rare-earth sintered magnet according to the present invention will be described with reference to the accompanying drawings.\n\n[0023]In this description, the composition of the main phase of an R-Fe-B based sintered magnet is represented by a general formula R 2 T 14 A. This main phase has an R 2 T 14 A type (Nd 2 Fe 14 B type) crystal structure (tetragonal).\n\n[0024]In this formula, R is one of the rare-earth elements (including Y), T is either Fe alone or a mixture of Fe and at least one transition metal element other than Fe, and A is either boron alone or a mixture of boron and carbon. It should be noted that the rare-earth element R preferably includes at least one light rare-earth element such as Nd or Pr and preferably further includes at least one heavy rare-earth element selected from the group consisting of Dy, Ho and Tb to ensure good coercivity. The light rare-earth element preferably accounts for 50 atomic % or more of the overall rare-earth element R. Examples of the non-Fe transition metal elements include Ti, V, Cr, Mn, Fe, Co and Ni. T preferably either consists essentially of Fe alone or consists mostly of Fe, a portion of which is replaced with at least one of Ni and Co.\n\n[0025]To achieve good magnetic properties, the overall composition of the sintered magnet preferably includes 25 mass% to 40 mass% of R, 0.6 mass% to 1.6 mass% of A, and T and very small amounts of additives (and inevitably contained impurities) as the balance. The very small amounts of additives preferably include at least one element selected from the group consisting of Al, Cu, Ga, Cr, Mo, V, Nb and Mn. The total amount of those additives introduced is preferably at most 1 mass% of the overall magnet.\n\n[0026]The present inventors analyzed the relationship between the powder fill density and texture of a rapidly solidified alloy from various angles to make the following discoveries, which formed the basis of the present invention.\n\n[0027]A melt of a rare-earth alloy material having the desired composition described above is prepared and rapidly cooled and solidified to make a rapidly solidified alloy. In this process, the resultant rapidly solidified alloy may have any of various textures depending on that composition and/or specific conditions of the rapid cooling process.\n\n[0028]For example, in making a rapidly solidified alloy by a strip casting process (see, for example, United States Patent No. 5,666,635), if the circumferential velocity of the chill roller is relatively high, then a structure with a chilled texture such as that shown in FIG. 2 is formed. The cross-sectional micrograph of the rapidly solidified alloy shown in FIG. 2 includes about 10 vol% of chilled texture.\n\n[0029]On the other hand, if the circumferential velocity of the roller is relatively low, then a structure consisting essentially of a dendrite texture (i.e., columnar texture or columnar crystals) alone and including substantially no chilled texture is formed as shown in FIG. 1. Also, even if a number of structures each consist essentially of the dendrite texture, the dendritic widths thereof are changeable with the circumferential velocity of the roller. Specifically, the lower the circumferential velocity, the broader the dendritic width.\n\n[0030]Such a difference in texture between rapidly solidified alloys also depends on the composition of the alloy. For example, when a number of alloys were compared on the same rapid cooling conditions (e.g., at the same chill roller circumferential velocity), the higher the R content of the alloy, the narrower the dendritic width thereof tended to be.\n\n[0031]A number of rapidly solidified alloys with mutually different textures were obtained in this manner. Then, each of those alloys was subjected to pulverization, compaction and sintering process steps under predetermined conditions, thereby making a sintered magnet. The magnetic properties of the resultant sintered magnets were evaluated and the fill densities of the alloy powders that were subjected to the compaction process were estimated. As a result, the present inventors discovered that if a plurality of alloy powders, made from rapidly solidified alloys with mutually different dendritic widths, were blended and used, then the fill density of the blended alloy powder increased and the magnetic properties of the resultant sintered magnet improved. This is believed to be because if those rapidly solidified alloys with mutually different dendritic widths are pulverized, then powders with different particle size distributions corresponding to the respective dendritic widths are obtained, and therefore, the particle size distribution of the blended powder broadens. This would also be because the powder particles, made from the rapidly solidified alloys with mutually different dendritic widths, have different aspect ratios. For example, by controlling the dendritic widths of the two rapidly solidified alloys, making up the single blended powder, such that one of the two rapidly solidified alloys has an average dendritic width equal to or greater than the mean particle size thereof and that the other rapidly solidified alloy has an average dendritic width less than the mean particle size thereof, a powder, made up of two groups of particles with mutually different aspect ratios, can be obtained.\n\n[0032]It should be noted that the dendritic width, characterizing such a rapidly solidified alloy, is supposed herein to be the average of the two different dendritic widths (which will be referred to herein as the \"average dendritic width\"). The average dendritic width was obtained by counting the number of dendrites included within a certain range (with a width of 20 µm to 50 µm, for example) and calculating the average. Such a method is sometimes called a \"line segment method\". The number of samples was supposed to be at least five.\n\n[0033]A method of making a rare-earth alloy powder according to the present invention includes the steps of: (a) preparing a first rare-earth rapidly solidified alloy, which has a columnar texture with an average dendritic width falling within a first range, by subjecting a melt of a first rare-earth alloy with a first composition to a rapid cooling process; (b) preparing a second rare-earth rapidly solidified alloy, which has a columnar texture with an average dendritic width that is smaller than that of the first rare-earth rapidly solidified alloy and that falls within a second range, by subjecting a melt of a second rare-earth alloy with a second composition to the rapid cooling process; (c) making a first rare-earth alloy powder by pulverizing the first rare-earth rapidly solidified alloy; (d) making a second rare-earth alloy powder by pulverizing the second rare-earth rapidly solidified alloy; and making a powder blend including the first and second rare-earth alloy powders.\n\n[0034]The first range is from 3 µm through 6 µm while the second range is from 1.5 µm through 2.5 µm. The reasons are as follows. Specifically, if the average dendritic width of the first rare-earth alloy powder exceeded 6 µm, then the coercivity might decrease unfavorably. However, if the average dendritic width were less than 3 µm, then the fill density might decrease, which is not beneficial, either. On the other hand, if the average dendritic width of the second rare-earth alloy powder exceeded 2.5 µm, then the fill density and/or the sinterability might decrease unfavorably. However, if the average dendritic width were less than 1.5 µ m, then it would be difficult to produce a uniformly texture.\n\n[0035]The average dendritic width of the first rare-earth alloy powder is preferably defined equal to or greater than the mean particle size thereof, but the average dendritic width of the second rare-earth alloy powder is preferably defined less than the mean particle size thereof. With these settings, the aspect ratio of particles of the first rare-earth alloy powder should be different from that of particles of the second rare-earth alloy powder, and therefore, the fill density of their blend should improve. This is particularly effective if the mean particle sizes of the first and second rare-earth alloy powders are substantially equalized with each other.\n\n[0036]The first and second rare-earth alloy powders included in the blended powder preferably have a volume percentage ratio of 95:5 through 60:40, more preferably from 80:20 through 70:30. This is because if the blending ratio fell out of any of these ranges, the fill density could not be increased sufficiently. Optionally, not only the first and second rare-earth alloy powders but also a third rare-earth alloy powder with a different average dendritic width may be blended together.\n\n[0037]The rapidly solidified alloys with different average dendritic widths may be obtained by changing the rapid cooling rates, for example. When a strip casting process is adopted, the rapid cooling rate may be adjusted by changing the circumferential velocity of the chill roller, for example. The strip casting process excels in mass productivity, which is very beneficial. The rapidly solidified alloy with a relatively broad dendritic width may also be made by a centrifugal casting process resulting in a relatively low rapid cooling rate.\n\n[0038]Alternatively, the rapidly solidified alloys with different average dendritic widths may also be obtained by changing the compositions of the alloy materials. It is naturally possible to adjust both the alloy material composition and the rapid cooling rate alike. For example, when the rapidly solidified alloys are made by a strip casting process, the first rare-earth rapidly solidified alloy preferably includes 30 mass% to 32 mass% of R, while the second rare-earth rapidly solidified alloy preferably includes 33.5 mass% to 35 mass% of R. If the compositions of the first and second rare-earth alloys fell out of these ranges, then it would be difficult to obtain rapidly solidified alloys with the desired dendritic widths.\n\n[0039]The blending process step for obtaining the blend of first and second rare-earth alloy powders, obtained from the rapidly solidified alloys with different average dendritic widths, may be carried out at an appropriate point in time. Each of the rapidly solidified alloys is typically a flake and needs to go through a two-stage pulverization process (i.e., a coarse pulverization process step and a fine pulverization process step) before the alloy powder to be subjected to the compaction process step is obtained. As to this pulverization process, the rapidly solidified alloys may be blended together at any time. That is to say, it does not matter if it is when the rapidly solidified alloys are still flakes, after the rapidly solidified alloy flakes have been coarsely pulverized into coarse powders, or after the coarse powders have been finely pulverized into fine powders (corresponding to the first and second rare-earth alloy powders described above).\n\n[0040]Nevertheless, to minimize the oxidation of the alloy materials, not so much the fine powders as the alloy flakes or coarse powders are preferably blended together. In that case; the blending process step and the pulverization process step may be carried out at the same time. Naturally, before the blending ratio is determined, the compositions of the respective rare-earth alloy materials (in the form of alloy flakes, coarse powders or fine powders) are preferably analyzed.\n\n[0041]The alloy powder to be eventually compacted preferably has a mean particle size of about 1 µm to about 10 µm, more preferably 1.5 µm to 7 µm. To minimize the oxidation and/or improve the flowability or compactibility, the surface of the rapidly solidified alloy powder may be coated with a lubricant if necessary. It is preferable that the lubricant is added during the process step of finely pulverizing the rapidly solidified alloy coarse powder. As the lubricant, a liquid lubricant consisting essentially of a fatty acid ester can be used effectively.\n\n[0042]A compact is made by compacting the blended powder thus obtained by a known compaction method. Then, the compact is processed by known methods to complete a sintered magnet.\n\n[0043]The rapidly solidified alloy powder (blended powder) may be compacted (e.g., uniaxially compacted and compacted) with a motorized press at a pressure of 1.5 ton/cm 2[0044]Next, the resultant compact is sintered at a temperature of about 1,000 °C to about 1,100 °C for approximately one to five hours within either an inert gas (such as rare gas or nitrogen gas) atmosphere (preferably at a reduced pressure) or a vacuum, for example. Subsequently, by subjecting the resultant sintered body to an aging treatment at a temperature of about 450 °C to about 800 °C for approximately one to eight hours, an R-Fe-B based alloy sintered body can be obtained. Optionally, in order to reduce the amount of carbon included in the sintered body and thereby improve the magnetic properties, the lubricant that covers the surface of the alloy powder may be heated and removed if necessary before the sintering process step. This lubricant removal process step may be carried out at a temperature of about 100 °C to about 600 °C for approximately three to six hours within a reduced pressure atmosphere, although these conditions may vary with the type of the lubricant used.\n\n[0045]Then, by magnetizing the resultant sintered body, a sintered magnet is completed. The magnetizing process step may be carried out at an arbitrary point in time after the sintering process step is over, and could be performed after the magnet has been embedded in a motor or any other device. The magnetizing magnetic field may have a strength of 2 MA/m or more, for example.\n\nExamples\n\n[0046]Hereinafter, a method for producing an R-Fe-B based sintered magnet according to the present invention will be described by way of specific examples. However, the present invention is in no way limited to the following specific examples.\n\n[0047]A first rare-earth alloy may have a composition including 31.3 mass% of Nd+Pr+Dy (of which 1.2 mass% to 2.0 mass% is Dy and the rest is Nd and Pr), 1.0 mass% of B, 0.9 mass% of Co, 0.2 mass% of Al, 0.1 mass% of Cu, and Fe and inevitably contained impurities as the balance. The first rare-earth alloy with this composition was melted at about 1,350 °C, and a rapidly solidified alloy (alloy flakes) was made from the resultant molten alloy by a strip casting process. By setting the circumferential velocity of the chill roller to 60 m/min, alloy flakes with a thickness of about 0.3 mm were obtained. When observing the cross section of these alloy flakes with a microscope, the present inventors confirmed that the rapidly solidified alloy included substantially no chilled texture and consisted essentially of columnar crystals alone. The average dendritic width was about 4 µm.\n\n[0048]On the other hand, a second rare-earth alloy may have a composition including 34.5 mass% of Nd + Pr + Dy (of which 1.0 mass% to 2.0 mass% is Dy and the rest is Nd and Pr), 1.0 mass% of B, 0.9 mass% of Co, 0.2 mass% of Al, 0.1 mass% of Cu, and Fe and inevitably contained impurities as the balance. The second rare-earth alloy with this composition was melted at about 1,350 °C, and a rapidly solidified alloy (alloy flakes) was made from the resultant molten alloy by a strip casting process. By setting the circumferential velocity of the chill roller to 90 m/min, alloy flakes with a thickness of about 0.2 mm were obtained. When observing the cross section of these alloy flakes with a microscope, the present inventors confirmed that the rapidly solidified alloy included substantially no chilled texture and consisted essentially of columnar crystals alone. The average dendritic width was about 2 µm.\n\nExample No. 1\n\n[0049]In this example, the flakes of the first and second rare-earth alloys obtained as described above were coarsely pulverized separately by a hydrogen pulverization process, for example. The resultant coarse powders were blended together with a rocking mixer. The blending ratio was 75:25 on a volume basis.\n\n[0050]Then, the resultant blended coarse powder was finely pulverized with a jet mill to a mean particle size of about 3 µm. Optionally, before the coarse powders are blended together, those powders may be put into the jet mill by a predetermined amount so as to be blended together while being finely pulverized. Thereafter, about 0.3 mass% of a lubricant consisting essentially of a fatty acid ester was added thereto and mixed with them.\n\n[0051]The resultant blended powder was compacted and compacted (at a pressure of 1 ton/cm 2[0052]Thereafter, the compact was sintered at 1,050 °C for four hours within a reduced pressure Ar atmosphere and then subjected to an aging treatment at 500 °C for one hour. Subsequently, the sintered body was magnetized with a pulse magnetizer and then the magnetic properties of the resultant sintered magnet were evaluated with a search coil and a flux meter. The fill density was measured with a tap denser. As used herein, the \"fill density\" refers to a tap density obtained with the tap denser. The results are shown in the following Table 1.\n\nExample No. 2\n\n[0053]As in the first example described above, coarse powders of the first and second rare-earth alloys were obtained. Then, the coarse powders were finely pulverized separately with a jet mill, thereby obtaining first and second rare-earth alloy powders with a mean particle size of about 3 µm. By blending these fine powders at a ratio of 75:25 using a rocking mixer, a blended powder was obtained. Thereafter, a sintered magnet was obtained and the magnetic properties thereof were evaluated as in the first example described above.\n\nExample No. 3 (not part of the invention)\n\n[0054]A sintered magnet was produced as in the first example described above except that the first rare-earth rapidly solidified alloy was made by a centrifugal casting process. The present inventors confirmed that the first rare-earth rapidly solidified alloy, made by the centrifugal casting process, included substantially no chilled texture and consisted essentially of columnar crystals only. The average dendritic width was about 20 µm.\n\nComparative Example No. 1\n\n[0055]The rare-earth alloy had a composition including 32.0 mass% of Nd + Pr + Dy (of which 1.0 mass% to 2.0 mass% was Dy and the rest was Nd and Pr), 1.0 mass% of B, 0.9 mass% of Co, 0.2 mass% of Al, 0.1 mass% of Cu, and Fe and inevitably contained impurities as the balance. The first rare-earth alloy with this composition was melted at about 1,350 °C, and a rapidly solidified alloy (alloy flakes) was made from the resultant molten alloy by a strip casting process. By setting the circumferential velocity of the chill roller to 100 m/min, alloy flakes with a thickness of about 0.3 mm were obtained. When observing the cross section of these alloy flakes with a microscope, the present inventors confirmed that the rapidly solidified alloy included 10 vol% of chilled texture. Thereafter, as in the first example described above, the alloy flakes were coarsely and then finely pulverized to obtain a compact, which was then processed into a sintered magnet.\n\nComparative Example No. 2\n\n[0056]A rapidly solidified alloy (alloy flakes) was made by a strip casting process from a rare-earth alloy with the same composition as the first comparative example. By setting the circumferential velocity of the chill roller to 70 m/min, alloy flakes with a thickness of about 0.3 mm were obtained. When observing the cross section of these alloy flakes with a microscope, the present inventors confirmed that the rapidly solidified alloy included substantially no chilled texture. Thereafter, as in the first example described above, the alloy flakes were coarsely and then finely pulverized to obtain a compact, which was then processed into a sintered magnet.\n\nComparative Example No. 3\n\n[0057]A rapidly solidified alloy was made by a centrifugal casting process from a rare-earth alloy with the same composition as the first comparative example. When observing the cross section of this rapidly solidified alloy with a microscope, the present inventors confirmed that the rapidly solidified alloy included substantially no chilled texture but consisted essentially of columnar crystals only. The average dendritic width was about 25 µm. Thereafter, as in the first example described above, the rapidly solidified alloy was coarsely and then finely pulverized to obtain a compact, which was then processed into a sintered magnet. \n\nTable 1 \n\nExample 1Example 2Example 3Comp. Ex. 1Comp. Ex. 2Comp. Ex. 3\n\nB r  (T)1.371.371.361.341.331.33\n\nH cJ  (kA/m)1233.51233.51074.31193.71114.1994.8\n\nBH max  (kJ/m 3362362358358354350\n\nFill density (g/cm 32.12.22.22.02.02.0\n\nSintering Temp. (°C)1,0401,040.1,0601,0501,0401,080\n\n          \n\n[0058]As can be seen from the results shown in Table 1, the rare-earth alloy powders (blended powders) of Examples Nos. 1 to 3 achieve higher fill densities than the non-blended powders of Comparative Examples Nos. 1 to 3. Accordingly, even when sintered at relatively low sintering temperatures, the rare-earth alloy powders of Examples Nos. 1 to 3 still achieved a desired density of 7.5 g/cm 3[0059]Example No. 3 that used the first rare-earth rapidly solidified alloy (with an average dendritic width of about 20 µm) made by a centrifugal casting process did not exhibit as good magnetic properties as Examples Nos. 1 and 2 that used the first rare-earth rapidly solidified alloy (with an average dendritic width of about 4 µm) made by a strip casting process. Thus, it can be seen that the strip casting process is a preferred method for making the rapidly solidified alloy.\n\n[0060]Next, the results of experiments the present inventors carried out to define a preferred range of average dendritic widths will be described.\n\n[0061]With alloys having the same compositions as those described for the specific examples of the present invention used as the first and second rare-earth alloys but with the conditions of the strip casting process changed, first and second rare-earth rapidly solidified alloys with mutually different dendritic widths were obtained. The average dendritic widths of respective samples are shown in the following Table 2. After the first and second rare-earth rapidly solidified alloys were obtained in this manner, sintered magnets were produced as in the second example described above except that the sintering temperatures were set as shown in the following Table 3. The present inventors evaluated the magnetic properties of the resultant sintered magnets. The results are also shown in the following Table 3. It has to be noted that sample 4 is not part of the invention. \n\nTable 2\n\nSample No.Average dendritic width of 1 stAverage dendritic width of 2 nd\n\n16 µm1.5 µm\n\n26 µm2.5 µm\n\n33 µm1.5 µm\n\n48 µm2 µm\n\n         \n\n Table 3       Sample 1Sample 2Sample 3Sample 4B r  (T)1.381.381. 371.38H cJ  (kA/m)1215.51215.31223.51154.0BH max  (kJ/M 3366366362366Fill density (g/cm 32.22.22.22.2Sintering Temp. (°C)1,0401,0401,0401,050           \n\n[0062]As can be seen from Table 3, Sample No. 4, of which the first rare-earth rapidly solidified alloy had an average dendritic width of 8 µm, had lower coercivity H cJ  than any other sample. Accordingly, to achieve sufficient coercivity, the first rare-earth rapidly solidified alloy has an average dendritic width of 6 µm or less. It should be noted that the greater the average dendritic width of the first rare-earth rapidly solidified alloy, the higher the remanence B r  tends to be and the lower the coercivity H cJ  tends to be.\n\n[0063]As long as the ave', '技术领域\n\n  [0001] 稀土类烧结磁体的制造方法技术领域本发明涉及稀土类烧结磁体(特别是R-Fe-B系烧结磁体)的制造方法,还涉及稀土类稀土合金粉末的制造方法。 土烧结磁铁。\n\n     背景技术\n\n  [0002] 稀土合金烧结磁体(永磁体)通常是通过将稀土合金粉末压制,烧结所得粉末压块,然后根据需要对烧结体进行时效处理而制造的。 当前广泛用于各种应用中的永磁体包括稀土钴基(通常是sa钴基)磁体和稀土铁硼基(通常是钕铁硼基)磁体。 其中,稀土-铁-硼基磁体(在本文中称为“ R-Fe-B-基磁体”,其中R是包括Y的稀土元素之一,Fe是铁,并且 硼是越来越多地用于各种电子设备中。 这是因为基于R-Fe-B的磁体表现出最大的能量乘积,该能量乘积高于各种其他类型的磁体中的任何一种,但是相对便宜。\n\n  [0003] 基于R-Fe-B的烧结磁体包括主要由四方的R 2 Fe 14 B化合物(在本文中有时称为“ R 2 Fe 14 B型晶体层”)组成的主相,富R的 例如,包括Nd的N相和富含B的相。 在R-Fe-B基烧结磁体中,一部分Fe可以用诸如Co或Ni之类的过渡金属代替,而一部分B可以用C替代。R-Fe-B基烧结磁体, 例如,在美国专利号4,770,723和4,792,368中描述了本发明的有效应用。\n\n  [0004] 在现有技术中,已经通过铸锭法将R-Fe-B基合金制备为用于这种磁体的材料。 通常,在锭铸法中,通过感应加热法使作为起始原料的稀土金属,电解铁和硼铁合金熔融,然后将这样得到的熔体在铸模中相对缓慢地冷却,从而制备出 固态合金(即合金锭)。 还已知一种通过Ca还原工艺(也称为“还原扩散工艺”)获得固态合金的方法。\n\n  [0005] 近来,诸如带材铸造工艺或离心铸造工艺的快速冷却工艺(也称为“熔融淬火工艺”)已在本领域引起了很多关注。 在快速冷却过程中,使熔融合金与单个冷却辊,双冷却辊,旋转盘或旋转的圆柱形铸模的内表面接触并相对快速地冷却,从而制得凝固的合金 比熔融合金薄的合金锭。\n\n  [0006] 通过快速冷却工艺获得的固体合金在本文中将被称为“快速冷却合金(或快速凝固的合金)”,以便容易地区别于通过常规铸锭法或Ca还原工艺获得的固体合金。 快速凝固的合金通常具有薄片或带状(细条)的形状。\n\n  [0007] 与通过常规的铸锭法或压铸法制成的固体合金(这种合金在本文中称为“合金”)相比,快速固化的合金在较短的时间内(即在冷却时)淬火 10 2 [0008] 通过例如通过氢粉碎工艺和/或各种机械研磨工艺(例如,使用球磨机或磨碎机)中的任何一种,将任何形式的快速凝固的合金粗粉碎,然后细粉碎,从而获得待压实的合金粉末。 例如通过使用喷射磨的干式粉碎法将所得的粗粉(平均粒径为10  μm至500  μm)粉碎。 待压实的合金粉末的平均粒度优选为1  μ  m至10  μ  m,更优选为1.5  μ  m至7  μ  m,以达到足够的磁性能。 应当指出,除非另有说明,否则粉末的“平均粒度”在本文中是指FSSS粒度。\n\n  [0009] 以这种方式获得的快速凝固的合金粉末通常通过单轴压制工艺加工成压坯。 由于其制造方法,快速凝固的合金粉末具有窄的粒度分布并实现不良的填充密度(即,不能将腔填充至期望的填充密度),这都是问题。\n\n  [0010] 因此,为了提高快速凝固的合金粉末的填充密度,提出了各种对策。 例如,日本专利申请公开第2000-219942号描述了一种快速凝固的合金,其包括1vol%至30vol%的3× μ粒径的冷却织构。 通过辊式快速冷却工艺制成m≤m,然后将其粉碎以获得快速固化的合金粉末,与常规方法相比,可以提高填充密度并且可以降低烧结温度。\n\n  [0011] 应当注意,“冷硬组织”是在R-Fe-B基稀土合金的熔体刚刚与表面接触的初始阶段在冷辊表面附近形成的结晶相。 快速冷却系统的冷却部件(例如,冷却辊)的表面开始凝固。 与在冷却和凝固过程的初始阶段以及之后形成的柱状织构(或树枝状织构)相比,冷却后的织构具有更各向同性(或等轴测)和更精细的结构。 也就是说,当熔体在辊的表面上迅速冷却并固化时,产生冷硬的质地。\n\n  [0012] 在US 5 595 608 A中公开了永磁体的另一种制造方法。\n\n     发明内容\n\n  [0013] 但是,冷硬组织具有磁各向同性的精细结构。 因此,如果快速凝固的合金粉末具有许多冷硬组织,则所得烧结磁体的磁性能下降。\n\n  [0014] 为了克服上述问题,本发明的主要目的是提供一种制备稀土快速凝固的合金粉末的方法,该方法基本上不包括冷却的组织,但是比常规的具有更高的填充密度。 提供一种通过使用这种粉末来制造稀土类烧结磁体的方法。\n\n  [0015] 根据本发明的稀土合金粉末的制造方法如权利要求1所述。\n\n  [0016] 一个优选实施例在权利要求2中提出。\n\n  [0017]  4.根据权利要求3所述的稀土合金粉末的制造方法,其特征在于,还包括以下步骤:通过将第一稀土类快速凝固合金粗粉碎而得到第一稀土类合金粗粉。 通过将第二稀土快速凝固合金粗粉碎而获得第二稀土合金粗粉。 通过将第一和第二稀土合金粗粉混合在一起,制成混合粗粉; 得到平均粒径为1  μ的粉末混合物。  m至10  μ 通过将混合粉末细粉碎,得到m。\n\n  [0018] 根据权利要求4的制备稀土合金粉末的方法包括以下步骤:制备平均粒径为1  μ的第一稀土粉末。  m至10  μ  m从第一种稀土快速凝固合金开始; 制备平均粒径为1  μ的第二种稀土粉末。  m至10  μ  m来自第二种稀土快速凝固合金; 通过将第一和第二稀土粉末混合在一起获得粉末混合物。\n\n  [0019] 进一步的优选实施例在权利要求5至10中提出。 \n\n[0020] 权利要求11所述的稀土类烧结磁铁的制造方法是主相具有以R 2 T 14 A(R为稀土元素之一)表示的组成的稀土类烧结磁铁的制造方法。 包括Y; T为单独的Fe或Fe和除Fe以外的过渡金属元素的混合物; A为单独的硼或硼和碳的混合物。 该方法包括以下步骤:通过上述方法之一制备稀土合金粉末;以及 压实包括稀土合金粉末的粉末材料,从而获得压块; 烧结体,从而实现上述目的。\n\n     附图说明\n\n  [0021] 图。 图1是显微照片,其显示了基本上不具有冷组织的快速凝固的合金的横截面。 图。 图2是显示包括凝固组织的快速凝固合金的横截面的显微照片。\n\n     实施本发明的最佳模式\n\n  [0022] 在下文中,将参考附图描述根据本发明的用于制造R-Fe-B基稀土烧结磁体的方法的优选实施方式。\n\n  [0023] 在本说明书中,R-Fe-B类烧结磁体的主相的组成由通式R 2 T 14 A表示。该主相具有R 2 T 14 A型(Nd 2 Fe 14 B型)。 晶体结构(四边形)\n\n  [0024] 在该式中,R为稀土元素(包括Y)中的一种,T为单独的Fe或Fe和Fe以外的至少一种过渡金属元素的混合物,A为单独的硼或硼的混合物。 和碳。 应当注意,稀土元素R优选包括至少一种轻稀土元素,例如Nd或Pr,并且优选还包括至少一种选自Dy,Ho和Tb的重稀土元素。 确保良好的矫顽力。 轻稀土元素优选占全部稀土元素R的50原子%以上。非Fe过渡金属元素的实例包括Ti,V,Cr,Mn,Fe,Co和Ni。  T优选要么基本上仅由Fe组成,要么主要由Fe组成,其一部分被Ni和Co中的至少一种取代。\n\n  [0025] 为了获得良好的磁性能,烧结磁体的整体组成优选包括25质量%至40质量%的R,0.6质量%至1.6质量%的A和T以及非常少量的添加剂(和不可避免地包含的杂质)作为 余额。 极少量的添加剂优选包括选自Al,Cu,Ga,Cr,Mo,V,Nb和Mn的至少一种元素。 这些引入的添加剂的总量优选为整个磁体的至多1质量%。\n\n  [0026] 本发明人从各种角度分析了粉末填充密度与快速凝固的合金的织构之间的关系,以得到以下发现,这构成了本发明的基础。\n\n  [0027] 制备具有上述期望组成的稀土合金材料的熔体,并将其快速冷却并固化以制备快速固化的合金。 在该过程中,取决于快速冷却过程的组成和/或特定条件,所得的快速固化合金可具有各种织构中的任何一种。\n\n  [0028] 例如,在通过薄带连铸法制造快速凝固的合金时(例如,参见美国专利第5,666,635号),如果冷却辊的圆周速度相对较高,则具有冷却结构的组织例如 如图所示。 形成2。 图1所示的快速凝固合金的横截面显微照片示于图1。  2包含约10体积%的冷纹理。\n\n  [0029] 另一方面,如果辊的圆周速度相对较低,则如图1所示,形成仅由树枝状织构(即,柱状织构或柱状晶体)组成并且基本上不包括冷却织构的结构。 同样,即使许多结构基本上都由树枝状纹理组成,其树枝状宽度也随辊的圆周速度而变化。 具体地说,圆周速度越低,树突宽度越宽。 \n\n[0030] 快速凝固的合金之间的这种质地差异还取决于合金的成分。 例如,当在相同的快速冷却条件下(例如,在相同的冷却辊圆周速度下)比较多种合金时,合金的R含量越高,其枝晶宽度趋于越窄。\n\n  [0031] 以此方式获得了许多具有相互不同的组织的快速凝固的合金。 然后,将这些合金中的每一种在预定条件下进行粉碎,压实和烧结处理步骤,从而制成烧结磁体。 评估所得烧结磁体的磁性能,并评估进行压制处理的合金粉末的填充密度。 结果,本发明人发现,如果混合并使用由树枝状宽度彼此不同的快速凝固的合金制成的多种合金粉末,则混合合金粉末的填充密度增加,并且烧结所得的磁性能。 磁铁改善了。 据信这是因为,如果将那些具有彼此不同的树枝状宽度的快速凝固的合金粉碎,则获得具有与各个树枝状宽度相对应的不同粒径分布的粉末,因此,混合粉末的粒径分布变宽。 这也是因为由具有彼此不同的树枝状宽度的快速固化的合金制成的粉末颗粒具有不同的纵横比。 例如,通过控制两种快速凝固的合金的树枝状宽度,组成单一共混粉末,使得两种快速凝固的合金之一的平均树枝状宽度等于或大于其平均粒径,而另一种 快速凝固的合金的平均枝晶宽度小于其平均粒径,可以得到由纵横比互不相同的两组颗粒组成的粉末。\n\n  [0032] 应当注意,表征这种快速凝固的合金的树枝状宽度在本文中被认为是两种不同树枝状宽度的平均值(在本文中将其称为“平均树枝状宽度”)。 平均树突宽度是通过对一定范围(例如,宽度为20  μm至50  μm)中包含的树突的数量进行计数并计算平均值而获得的。 有时将这种方法称为“线段方法”。 样本数量应至少为五个。\n\n  [0033] 根据本发明的制备稀土合金粉末的方法包括以下步骤:(a)通过如下方法制备第一稀土快速凝固合金,该合金具有圆柱状组织且平均枝晶宽度在第一范围内。 对具有第一成分的第一稀土合金的熔体进行快速冷却;(b)制备第二稀土快速凝固的合金,该合金的柱状组织的平均枝晶宽度小于合金的平均枝晶宽度。 通过对具有第二成分的第二稀土合金的熔体进行快速冷却过程,使第一稀土快速凝固合金落入第二范围内;(c)通过将粉末粉碎制成第一稀土合金粉末 第一稀土快速凝固合金;(d)通过将第二稀土快速凝固合金粉碎而制成第二稀土合金粉末; 制成包含第一和第二稀土合金粉末的粉末混合物。\n\n  [0034] 第一个范围是3  μ  m到6  μ  m,而第二个范围是1.5  μ  m到2.5  μ 米 原因如下。 具体地,如果第一稀土合金粉末的平均树枝状宽度超过6  μ  m,则矫顽力可能会降低。 但是,如果平均树突宽度小于3  μ  m,则填充密度可能会降低,这也是不利的。 另一方面,如果第二稀土合金粉末的平均树枝晶宽度超过2.5  μ  m,则填充密度和/或烧结性可能不利地降低。 但是,如果平均树突宽度小于1.5  μ  m,那么将难以产生均匀的纹理。 \n\n[0035] 优选将第一稀土合金粉末的平均树枝状宽度定义为等于或大于其平均粒径,但是优选将第二稀土合金粉末的平均树枝状宽度定义为小于其平均粒径。 通过这些设置,第一稀土合金粉末的颗粒的长径比应与第二稀土合金粉末的颗粒的长径比不同,因此,它们的混合物的填充密度应提高。 如果第一和第二稀土合金粉末的平均粒径彼此基本相等,则这特别有效。\n\n  [0036] 混合粉末中包括的第一和第二稀土合金粉末的体积百分比优选为95:5至60:40,更优选为80:20至70:30。 这是因为如果混合比落在这些范围中的任何一个之外,则填充密度不能充分增加。 任选地,不仅可以将第一和第二稀土合金粉末混合,而且可以将具有不同平均树枝晶宽度的第三稀土合金粉末混合在一起。\n\n  [0037] 例如,可以通过改变快速冷却速率来获得具有不同的平均枝晶宽度的快速凝固的合金。 当采用带钢铸造工艺时,例如,可以通过改变冷却辊的圆周速度来调节快速冷却速率。 薄带连铸工艺在批量生产方面表现出色,这是非常有益的。 具有相对较宽的枝晶宽度的快速凝固的合金也可以通过离心铸造工艺制成,从而导致相对较低的快速冷却速率。\n\n  [0038] 或者,也可以通过改变合金材料的组成来获得具有不同的平均枝晶宽度的快速凝固的合金。 当然可以同时调节合金材料的成分和快速冷却速率。 例如,在通过薄带连铸法制造快速凝固合金的情况下,第一稀土类快速凝固合金优选含有30质量%〜32质量%的R,第二稀土类快速凝固合金优选含有33.5质量%。 如果第一和第二稀土合金的组成不在这些范围内,则将难以获得具有所需枝晶宽度的快速凝固的合金。\n\n  [0039] 可以在适当的时间进行用于获得由具有不同的平均枝晶宽度的快速凝固的合金获得的第一和第二稀土合金粉末的混合物的混合工艺步骤。 每个快速凝固的合金通常是薄片,并且在获得要进行压实处理步骤的合金粉末之前,需要经历两阶段的粉碎处理(即,粗粉碎处理步骤和精细粉碎处理步骤)。  。 对于该粉碎过程,可以将快速固化的合金随时混合在一起。 就是说,快速凝固的合金片仍是片状,快速凝固的合金片被粗粉碎成粗粉之后,还是将粗粉细化成细粉之后(与 (上述的第一和第二稀土合金粉末)。\n\n  [0040] 然而,为了使合金材料的氧化最小化,优选地将细粉而不是合金薄片或粗粉混合在一起。 在这种情况下; 混合工序和粉碎工序可以同时进行。 自然地,在确定混合比之前,优选地分析各个稀土合金材料(合金薄片,粗粉或细粉的形式)的组成。\n\n  [0041] 最终要压实的合金粉末优选具有约1  μ的平均粒度。  m至约10  μ  m,更优选1.5  μ  m至7  μ 米 为了使氧化最小化和/或改善流动性或致密性,如果需要,可以在快速固化的合金粉末的表面上涂覆润滑剂。 优选在将快速凝固的合金粗粉微粉碎的处理步骤中添加润滑剂。 作为润滑剂,可以有效地使用主要由脂肪酸酯组成的液体润滑剂。 \n\n[0042] 通过将这样获得的混合粉末通过已知的压紧方法压紧来制造压块。 然后,通过已知方法加工压块以完成烧结磁体。\n\n  [0043] 快速固化的合金粉末(混合粉末)可以用电动压力机在1.5 ton / cm 2 [0044] 接下来,在惰性气体(例如稀有气体或氮气)中(最好在减压下)或惰性气体中,在约1,000℃至1100℃的温度下将所得压块烧结约1-5个小时。 例如真空。 随后,通过在约450℃至约800℃的温度下对所得的烧结体进行时效处理约一至八小时,可以获得R-Fe-B基合金烧结体。 任选地,为了减少包含在烧结体中的碳的量并由此改善磁性,可以在烧结工艺步骤之前根据需要加热和去除覆盖合金粉末表面的润滑剂。 该润滑剂去除工艺步骤可在减压气氛中在约100℃至约600℃的温度下进行约三至六小时,尽管这些条件可随所用润滑剂的类型而变化。\n\n  [0045] 然后,通过对所得的烧结体进行磁化,从而完成了烧结磁体。 磁化处理步骤可以在烧结处理步骤结束之后的任意时间点进行,并且可以在磁体已经嵌入电动机或任何其他装置中之后执行。 磁化磁场的强度例如可以为2MA / m以上。\n\n   例子\n\n  [0046] 在下文中,将通过具体实例描述根据本发明的用于制造R-Fe-B基烧结磁体的方法。 但是,本发明决不限于以下具体实施例。\n\n  [0047] 第一稀土合金可以具有包括31.3质量%的Nd + Pr + Dy(其中1.2质量%至2.0质量%是Dy,其余是Nd和Pr),1.0质量%的B,0.9质量%的组成。  Co,0.2质量%的Al,0.1质量%的Cu和Fe,不可避免地含有杂质作为余量。 具有这种组成的第一稀土合金在约1,350℃下熔化,并通过流延铸造法由所得的熔融合金制成快速凝固的合金(合金薄片)。 通过将冷却辊的圆周速度设置为60m / min,获得了厚度为约0.3mm的合金薄片。 当用显微镜观察这些合金薄片的横截面时,本发明人证实了快速凝固的合金基本上不包括冷硬组织,并且基本上仅由柱状晶体组成。 树突的平均宽度约为4  μ 米\n\n  [0048] 另一方面,第二稀土合金可以具有包括34.5质量%的Nd + Pr + Dy(其中1.0质量%至2.0质量%是Dy,其余是Nd和Pr),1.0质量%的Nd + Pr + Dy的组成。  B,0.9质量%的Co,0.2质量%的Al,0.1质量%的Cu和Fe,不可避免地含有杂质作为余量。 将具有这种组成的第二种稀土合金在约1,350℃下熔化,并通过流延铸造法从所得的熔融合金制得快速凝固的合金(合金薄片)。 通过将冷却辊的圆周速度设置为90m / min,获得了厚度约为0.2mm的合金薄片。 当用显微镜观察这些合金薄片的横截面时,本发明人证实了快速凝固的合金基本上不包括冷硬组织,并且基本上仅由柱状晶体组成。 树突的平均宽度约为2  μ 米\n\n   示例1 \n\n[0049] 在本实施例中,例如,通过氢粉碎工艺分别将如上所述获得的第一和第二稀土合金的薄片粗粉碎。 用摇动混合器将所得的粗粉混合在一起。 体积比为75:25。\n\n  [0050] 然后,将所得的混合粗粉用喷射式粉碎机细粉碎成平均粒径为约3  μ 米 任选地,在将粗粉混合在一起之前,可以将那些粉末以预定量放入喷射式粉碎机中,以便在被细粉碎的同时将它们混合在一起。 之后,向其中添加约0.3质量%的基本上由脂肪酸酯组成的润滑剂,并与它们混合。\n\n  [0051] 将所得的共混粉末压实并压实(在1吨/ cm 2的压力下和在1.5T的取向磁场下),从而获得压实物(垂直尺寸为18mm,水平尺寸为55mm,并且尺寸为25mm)。 高度(或按方向)。 应当注意,垂直于压紧方向施加对准磁场。 由此获得的压块的质量为100g。\n\n  [0052] 其后,在减压的Ar气氛中在1050℃下将成型体烧结4小时,然后在500℃下进行时效处理1小时。 随后,用脉冲磁化器将烧结体磁化,然后用搜索线圈和通量计评估所得烧结磁体的磁性能。 填充密度是用振实密度计测量的。 如本文所使用的,“填充密度”是指用振实密度更大的振实密度。 结果示于下表1。\n\n   示例2\n\n  [0053] 与上述第一实施例相同,获得了第一和第二稀土合金的粗粉。 然后,将粗粉末分别用喷射磨机细粉碎,从而获得平均粒径为约3  μ的第一和第二稀土合金粉末。 米 通过使用摇动混合器以75∶25的比例混合这些细粉,获得了混合粉。 之后,获得烧结磁体,并且如上述第一示例中那样评价其磁性能。\n\n   示例3 (不是本发明的一部分  )\n\n  [0054] 除了通过离心铸造法制造第一稀土类快速凝固合金以外,与上述第一实施例同样地制造烧结磁铁。 本发明人证实,通过离心铸造法制备的第一稀土快速凝固合金基本上不包括冷硬组织,并且基本上仅由柱状晶体组成。 树突的平均宽度约为20  μ 米\n\n   比较例1\n\n  [0055] 稀土合金的组成为:Nd + Pr + Dy为32.0质量%(其中Dy为1.0〜2.0质量%,其余为Nd和Pr),B为1.0质量%,Co为0.9质量%。  ,Al为0.2质量%,Cu为0.1质量%,Fe为余量,不可避免地含有杂质。 具有这种组成的第一稀土合金在约1,350℃下熔化,并通过流延铸造法由所得的熔融合金制成快速凝固的合金(合金薄片)。 通过将冷却辊的圆周速度设定为100m / min,可获得厚度约为0.3mm的合金薄片。 当用显微镜观察这些合金薄片的横截面时,本发明人证实了快速固化的合金包括10vol%的冷组织。 之后,与上述第一实施例一样,将合金薄片粗化然后细粉碎以获得压块,然后将其加工成烧结磁体。\n\n   比较例2\n\n  [0056] 用与第一比较例相同的组成的稀土合金,通过带钢铸造法制成快速凝固的合金(合金薄片)。 通过将冷却辊的圆周速度设置为70m / min,获得了厚度约为0.3mm的合金薄片。 当用显微镜观察这些合金薄片的横截面时,本发明人证实了快速固化的合金基本上不包括冷硬组织。 之后,与上述第一实施例相同,将合金薄片粗粉碎然后细粉碎以获得压块,然后将其加工成烧结磁体。\n\n   比较例3 \n\n[0057] 通过离心铸造法,由与第一比较例相同组成的稀土合金制成快速凝固的合金。 当用显微镜观察该快速凝固的合金的横截面时,本发明人证实了该快速凝固的合金基本上不包括冷硬组织,而基本上仅由柱状晶体组成。 树突的平均宽度约为25  μ 米 之后,与上述第一实施例相同,将快速凝固的合金粗化然后细粉碎以获得压块,然后将其加工成烧结磁体。   表格1    \n\n\n\n          例子1   例子2   例子3   比较 例如 1个   比较 例如 2   比较 例如 3 \n\n    B r(T )  1.37  1.37  1.36  1.34  1.33  1.33 \n\n    H cJ(kA / m )  1233.5  1233.5  1074.3  1193.7  1114.1  994.8 \n\n    BH最大( kJ / m 3   362  362  358  358  354  350 \n\n    填充密度( g / cm 3   2.1  2.2  2.2  2.0  2.0  2.0 \n\n    烧结温度 (°C )  1,040  1,040.  1,060  1,050  1,040  1,080  \n\n\n\n  [0058] 从表1所示的结果可以看出,实施例1至3的稀土合金粉末(混合粉末)比对比例1至3的非混合粉末具有更高的填充密度。 即使在较低的烧结温度下烧结,实施例1-3的稀土合金粉末仍达到7.5g / cm 3的所需密度和高矫顽力H cJ。\n\n  [0059] 使用通过离心铸造法制得的第一稀土快速凝固合金(平均树枝晶宽度为约20  μm)的实施例3没有表现出如实施例1和2那样好的磁性能。 该公司使用的是通过带钢铸造工艺制成的第一种稀土快速凝固合金(平均枝晶宽度约为4  μm)。 因此,可以看出,带钢铸造工艺是用于制造快速凝固的合金的优选方法。\n\n  [0060] 接下来,将描述本发明人为了限定平均树突宽度的优选范围而进行的实验结果。\n\n  [0061] 在具有与针对本发明的具体实施例描述的成分相同的合金的情况下,用作第一和第二稀土合金,但随着带钢铸造工艺条件的改变,第一和第二稀土快速凝固合金彼此不同。 获得树枝状宽度。 各个样品的平均树枝晶宽度示于下表2中。在以这种方式获得第一和第二稀土快速凝固的合金之后,如上述第二示例中那样制造烧结磁体,除了设定烧结温度之外。 如以下表3所示。本发明人评价了所得烧结磁体的磁性能。 结果也显示在下表3中。必须注意,样品4不是本发明的一部分。     表2\n\n       样品编号   1st    2nd  \n\n   1   6  μ 米   1.5  μ 米 \n\n   2   6  μ 米   2.5  μ 米 \n\n   3   3  μ 米   1.5  μ 米 \n\n   4   8  μ 米   2  μ 米  \n\n \n\n   表3               样品1   样品2   样品3   样品4      B r(T )  1.38  1.38  1. 37  1.38      H cJ(kA / m )  1215.5  1215.3  1223.5  1154.0      BH最大( kJ / M 3   366  366  362  366      填充密度( g / cm 3   2.2  2.2  2.2  2.2      烧结温度 (°C )  1,040  1,040  1,040  1,050\n\n  [0062] 从表3可以看出,第4号样品中的第一种稀土快速凝固合金的平均枝晶宽度为8  μ  m的矫顽力H cJ比其他任何样品都要低。 因此,为了获得足够的矫顽力,第一稀土快速凝固的合金具有6  μ的平均树枝晶宽度。 米或更少。 应该注意的是,第一稀土快速凝固合金的平均树枝状宽度越大,剩磁B r倾向于越高,矫顽力H cJ越倾向于降低。\n\n  [0063] 只要第二稀土快速凝固合金的平均树枝晶宽度在1.5  μ的范围内。  m至2.5  μ  m,磁性能基本上没有明显的差异。 自然地,如果第一稀土合金粉末的平均树枝晶宽度小于3  μ  m,如果第二种稀土合金粉末的m超过2.5  μ  m,那么将通过将两种稀土合金粉末混合在一起而增加的填充密度将不再增加。 而且,作为各种实验的结果,本发明人发现难以获得平均树枝晶宽度小于1.5  μ的稀土快速凝固合金。 米 因此,最小平均树突宽度为1.5  μ 米\n\n  [0064] 接下来,将描述通过使用与第二示例相同的第一和第二稀土合金粉末来找到最佳混合比(体积比)范围的实验结果。 下表4显示了第一和第二稀土合金粉末的体积比以及用振实密度仪测量的填充密度(振实密度):   表4\n\n         样品5   样品6   样品7   样品8   样品9   样品10 \n\n    体积比(第一:第二)   95:5   80:20   70:30   60:40   50:50   30:70 \n\n    填充密度( g / cm 3   2.1  2.2  2.2  2.1  1.9  1.8  \n\n \n\n其中,体积比是第一稀土合金粉末与第二稀土合金粉末的体积比。\n\n  [0065] 从表4所示的结果可以看出,第一稀土合金粉末与第二稀土合金粉末的体积比优选在95∶5至60∶40(特别是80∶80)的范围内。  20至70:30)。 尚不清楚为什么采用这样的混合比会提高填充密度。 但是,认为这样的体积比可以有效地弥补由第一稀土合金粉末与第二稀土合金粉末产生的间隙。\n\n     工业适用性\n\n  [0066] 本发明提供一种制备稀土快速凝固的合金粉末的方法,该方法基本上不具有冷却的组织,但是比常规的获得更高的填充密度,并且还提供了一种通过使用这种方法制备稀土烧结磁体的方法。 一种粉末。');
INSERT INTO `os_patent_instruction_text` VALUES (13022, 22851, '【0001】明 細 書 希土類合金粉末の製造方法および希土類焼結磁石の製造方法 技術分野\n\n【0002】本発明は、 希土類焼結磁石、 特に R— F e— B系焼結磁石の製造 方法および希土類焼結磁石の製造に用いられる希土類合金粉末の製 造方法に関する。 背景技術\n\n【0003】希土類合金の焼結磁石 （永久磁石） は、 一般に、 希土類合金の粉 末をプレス成形し、 得られた粉末の成形体を焼結し、 必要に応じて 時効処理することによって製造される。 現在、 希土類 · コバルト系 (典型的にはサマリゥム · コバルト系） 磁石と、 希土類 ·鉄 · ポロ ン系 （典型的にはネオジム · 鉄 · ボロン系） 磁石の二種類が各分野 で広く用いられている。 なかでも、 希土類 \'鉄 * ボロン系磁石 （以 下、 「R— F e— B系磁石」 と称する。 Rは Yを含む希土類元素、 F eは鉄、 Bはボロンである。 ） は、 種々の磁石の中で最も高い最 大磁気エネルギー積を示し、 価格も比較的安いため、 各種電子機器 へ積極的に採用されている。\n\n【0004】R - F e 一 B系焼結磁石は、 主に R2F e1 4Bの正方晶化合物か らなる主相 （ 「R2F e1 4B型結晶層」 ということもある。 ） 、 N d等からなる Rリッチ相、 および Bリッチ相から構成されている。 なお、 F eの一部が C oや N iなどの遷移金属と置換されてもよく、\n\nBの一部が Cで置換されてもよい。 本発明が好適に適用される R— F e— B系焼結磁石は、 例えば、 米国特許第 4 , 7 7 0 , 7 2 3号 明細書および米国特許第 4 , 7 9 2 , 3 6 8号明細書に記載されて いる。 米国特許第 4， 7 7 0 , 7 2 3号明細書および米国特許第 4:7 9 2 , 3 6 8号明細書の開示内容の全てを本明細書に援用する。 このような磁石となる R _ F e— B系合金を作製するために、 従 来は、 インゴッ ト铸造法が用いられてきた。 一般的なインゴッ ト铸 造法によると、 出発原料である希土類金属、 電解鉄およびフエロボ 口ン合金を高周波溶解し、 得られた溶湯を铸型内で比較的ゆつく り と冷却することによって固体合金 （合金インゴッ ト） が作製されるtまた、 C a還元法 （あるいは還元拡散法ともいわれる。 ） によって 固体合金を得る方法も知られている。\n\n【0005】近年、 合金の溶湯を単ロール、 双ロール、 回転ディスク、 または 回転円筒铸型の内面などと接触させることによって、 比較的速く冷 却し、 合金溶湯から、 インゴッ トよりも薄い凝固合金を作製するス トリップキャスト法や遠心铸造法に代表される急冷法 （ 「液体急冷 法」 といわれることもある。 ） が注目されている。\n\n【0006】本明細書においては、 急冷法によって得られた固体合金を 「急冷 合金 （または急冷凝固合金） 」 と呼び、 従来のインゴット铸造法や C a還元法によって得られる固体合金と区別することにする。 急冷 合金は、 典型的には、 フレークまたはリポン （薄帯） の形態を有し ている。\n\n【0007】急冷合金は、 従来のインゴッ ト铸造法 （金型铸造法） によって作 製された固体合金 （インゴッ ト合金） に比較して相対的に短い時間\n\n(冷却速度 ： 102°〇//3 6 じ以上2 1 043 6 じ以下） で 冷却されているため、 組織が微細化され、 結晶粒径が小さいという 特徴を有している。 また、 粒界の面積が広く、 Rリッチ相は粒界内 に広く広がっているため、 Rリツチ相の分散性にも優れるという利 点がある。 これらの特徴が故に、 急冷合金を用いることによって、 優れた磁気特性を有する磁石を製造することができる。\n\n【0008】プレス成形に供される合金粉末は、 これらの急冷合金を、 例えば 水素化粉碎法および/または種々の機械的粉砕法 （例えば、 ポール ミルやアトライ夕一が用いられる） で粉砕し、 得られた粗粉末 （例 えば、 平均粒径 1 0 m〜 5 00 m) を例えばジェットミルを用 いた乾式粉碎法で微粉砕することによって得られる。 プレス成形に 供せられる合金粉末の平均粒径は、 磁気特性の観点から、 1 m以 上 1 0 m以下の範囲内にあることが好ましく、 1. 5 m以上 7 m以下の範囲内にあることがさらに好ましい。 なお、 粉末の 「平 均粒径」 は、 特にことわらない限り、 ここでは、 F S S S粒径を指 すことにする。\n\n【0009】このようにして得られる急冷合金の粉末は、 典型的には一軸プレ ス工程によって成形体に加工される。 急冷合金の粉末は、 その製造 方法のだめに粒度分布が狭く、 充填性が悪く、 所望の充填密度まで 粉末をキヤビティに充填することができない、 という問題がある。 そこで、 急冷合金の粉末の充填性を改善するために種々の対策が 検討されている。 例えば、 特開 200 0— 2 1 9 942号公報には、 ロール急冷法を用いて、 粒径が 3 im以下のチル晶を体積分率で 1 〜30 %含む急冷合金を作製し、 これを粉砕することによって得ら\n\nれた急冷合金の粉末を用いると、 従来よりも充填率が向上し、 焼結 温度を低下できると記載されている。\n\n【0010】なお、 「チル晶」 とは、 R— F e— B系希土類合金の溶湯が急冷 装置の冷却ロールなどの冷却部材の表面と接触し、 凝固を開始する 初期の段階でロール表面近傍に形成される結晶相であり、 冷却凝固 過程の初期段階以降に形成される柱状組織 （デンドライ ト状組織） に比べて、 相対的に等方的 （等軸的） かつ微細な構造を有している, すなわち、 チル晶はロール表面で急速に冷却凝固することによって 生成される。 発明の開示\n\n【0011】しかしながら、 チル晶は磁気的に等方的な微細構造を有している ので、 急冷合金の粉末が多くのチル晶を含むと、 最終的に得られる 焼結磁石の磁気特性が低下するという問題がある。\n\n【0012】本発明は、 上記の諸点に鑑みてなされたものであり、 本発明の主 な目的は、 チル晶を実質的に含まず、 且つ、 従来よりも充填性が優 れた希土類急冷合金の粉末を製造する方法およびそのような粉末を 用いた希土類焼結磁石の製造方法を提供することにある。\n\n【0013】本発明の希土類合金粉末の製造方法は、 R2T1 4A ( Rは、 Yを 含む希土類元素、 Tは、 F e、 または F eと F e以外の遷移金属元 素の少なくとも 1種との混合物、 Aはボロンまたはボロンと炭素と の混合物） で表される組成の主相を有する希土類焼結磁石の製造に 用いられる希土類合金粉末の製造方法であって、 第 1の組成を有す る第 1希土類合金の溶湯から急冷法によって作製された急冷合金で\n\nあって、 平均デンドライ ト幅が第 1の範囲内にある柱状組織を有す る第 1希土類急冷合金を用意する工程と、 第 2の組成を有する第 2 希土類合金の溶湯から急冷法によって作製された急冷合金であって. 平均デンドライ ト幅が前記第 1希土類急冷合金よりも小さな第 2の 範囲内にある柱状組織を有する第 2希土類急冷合金を用意する工程 と、 前記第 1希土類急冷合金を粉碎することによって第 1希土類合 金粉末を作製する工程と、 前記第 2希土類急冷合金を粉砕すること によって第 2希土類合金粉末を作製する工程と、 前記第 1希土類合 金粉末と前記第 2希土類合金粉末とを含む、 粉末混合物を作製する 工程とを包含することを特徴とし、 そのことによって上記目的が達 成される。\n\n【0014】ある実施形態において、 前記第 1の範囲は前記第 1希土類合金粉 末の平均粒径以上であり、 前記第 2の範囲は前記第 2希土類合金粉 末の平均粒径未満である。\n\n【0015】前記第 1の範囲は 以上 6； Li m以下であることが好ましく、 前記第 2の範囲は 1 . 5 ^ m以上 2 . 5 以下であることが好ま しい。\n\n【0016】ある実施形態の希土類合金粉末の製造方法は、 前記第 1希土類急 冷合金を粗粉砕することによって第 1希土類合金粗粉末を得る工程 と、 前記第 2希土類急冷合金を粗粉砕することによって第 2希土類 合金粗粉末を得る工程と、 前記第 1および第 2希土類急冷合金粗粉 末を混合し混合粗粉末を得る工程と、 前記混合粉末を微粉碎するこ とによって、 平均粒径が 1 / m以上 1 0 以下の範囲内にある前 記粉末混合物を得る工程とを包含する。\n\nある実施形態の希土類合金粉末の製造方法は、 前記第 1希土類急 冷合金から平均粒径が 1 m以上 1 0\n\n以下の範囲内にある第 1 希土類粉末を作製する工程と、 前記第 2希土類急冷合金から平均粒 径が 1 m以上 1 0 im以下の範囲内にある第 2希土類粉末を作製 する工程と、 前記第 1希土類粉末と前記第 2希土類粉末とを混合す ることによって前記粉末混合物を得る工程とを包含する。\n\n【0017】前記混合粉末に含まれる前記第 1希土類急冷合金と前記第 2希土 類合金粉末との体積比率は、 9 5 : 5〜 6 0 : 4 0の範囲内にある ことが好ましい。 8 0 ： 2 0〜 7 0 ： 3 0の範囲内にあることがさ らに好ましい。\n\n【0018】ある実施形態において、 前記第 2希土類急冷合金はストリップキ ヤスト法によって作製される。\n\n【0019】ある実施形態において、 前記第 1希土類急冷合金はストリップキ ヤスト法によって作製される。\n\n【0020】ある実施形態において、 前記第 1希土類急冷合金は遠心铸造法に よって作製される。\n\n【0021】ある実施形態において、 前記第 1希土類急冷合金は、 3 0質量％ 以上 3 2質量％以下の Rを含む。 また、 ある実施形態において、 前 記第 2希土類急冷合金は、 3 3. 5質量％以上 3 5質量％以下の R を含む。\n\n【0022】本発明の希土類焼結磁石の製造方法は、 R2T14A (Rは、 Yを 含む希土類元素、 Tは、 F e、 または F eと F e以外の遷移金属元 素の少なくとも 1種との混合物、 Aはボロンまたはボロンと炭素と の混合物） で表される組成の主相を有する希土類焼結磁石の製造方\n\n法であって、 上記のいずれかの製造方法によって製造された希土類 合金粉末を用意する工程と、 前記希土類合金粉末を含む粉末材料を プレス成形することによって成形体を得る工程と、 前記成形体を焼 結する工程とを包含することを特徴とし、 そのことによって上記目 的が達成される。 図面の簡単な説明\n\n【0023】図 1は、 チル晶を実質的に含まない急冷合金の断面顕微鏡写真で ある。\n\n【0024】図 2は、 チル晶を含む組織を有する急冷合金の断面顕微鏡写真で ある。 発明を実施するための最良の形態\n\n【0025】以下、 図面を参照しながら、 本発明による R— F e _ B系希土類 焼結磁石の製造方法の実施形態を説明する。\n\n【0026】本願明細書においては、 R— F e— B系焼結磁石の主相の組成を R2T14Aという組成式で表すことにする。 この主相は R2T14A 型 （N d2F e14B型） 結晶構造 （正方晶） を有する。\n\n【0027】ここで、 Rは希土類元素 （Yを含む） 、 Tは、 F e、 または F e と F e以外の遷移金属元素の少なくとも 1種との混合物、 Aはポロ ンまたはボロンと炭素との混合物である。 なお、 希土類元素 Rは、 N dおよび P rの少なくとも 1種の軽希土類元素を含むことが好ま しく、 また、 保磁力の観点からは、 D y、 H oおよび T bの内から 選ばれる少なくとも 1種の重希土類元素を含むことが好ましい。 軽\n\n希土類元素は、 希土類元素 Rの全体 5 0原子％以上を占めることが 好ましい。 また、 F e以外の遷移金属元素は、 T i 、 V、 C r 、 M n、 F e 、 C o、 N iなどであり、 Tは、 その全部が F e、 あるい は F eの一部が N iおよび C oの少なくとも一方で置換されたもの が好ましい。\n\n【0028】焼結磁石の全体の組成としては、 Rを 2 5質量％〜 4 0質量％、 Aを 0 . 6質量％〜 1 . 6質量％、 残部が Tおよび微量添加元素 (ならびに不可避不純物） を含むことが、 磁気特性の観点から好ま しい。 なお、 微量添加元素は、 A l 、 C u、 G a、 C r 、 M o、 V， N bおよび M nの少なく とも 1種であることが好ましく、 添加量は 微量添加物の合計が全体の 1質量％以下であることが好ましい。 本発明は、 急冷合金の粉末の充填性と急冷合金の組織との関係に ついて検討した結果得られた以下に説明する新たな知見に基づいて なされたものである。\n\n【0029】上述した所望の組成の希土類合金原料の溶湯を準備し、 それを急 冷することによって、 急冷合金を作製すると、 その組成および Zま たは急冷条件によって、 種々の組織を有する急冷合金が得られる。 例えば、 ストリップキャスト法 （例えば、 米国特許第 5、 6 6 6、 6 3 5号明細書を参照、 米国特許第 5、 6 6 6 , 6 3 5号明細書の 開示内容の全てを本明細書に援用する。 ） を用いて急冷合金を作製 する場合、 冷却ロールの周速度が比較的速いと、 図 2に示すような チル晶を含む組織が形成される。 図 2に示した急冷合金の断面顕微 鏡写真は、 約 1 0体積％のチル晶が形成されている。\n\nこれに対し、 ロールの周速度が比較的遅いと、 図 1に示すように. チル晶を含まない実質的にデンドライ ト組織 （柱状組織あるいは柱 状結晶） のみからなる組織が形成される。 また、 実質的にデンドラ ィ ト組織だけを含む組織であっても、 ロールの周速度がより遅いも のほどデンドライ トの幅が広くなる。\n\n【0030】このような急冷合金における組織の違いは、 合金の組成にも依存 して変わる。 例えば、 同じ急冷条件 （例えば冷却ロールの周速度） で比較すると、 Rの含有量が多い程デンドライ トの幅が小さくなる 傾向が認められた。\n\n【0031】このように、 組織が異なる急冷合金を作製し、 それぞれ、 所定の 条件で、 粉砕工程から、 プレス成形工程、 焼結工程を経て、 焼結磁 石を作製し、 得られた焼結磁石の磁気特性を評価するとともに、 プ レス成形に供した合金粉末の充填性などを評価した結果、 デンドラ ィ ト幅が異なる急冷合金から作製した合金粉末を混合して用いると， 合金粉末の充填性が改善され、 その結果、 焼結磁石の磁気特性が改 善されることがわかった。 この理由は、 デンドライ ト幅が異なる急 冷合金を粉砕すると、 それぞれのデンドライ ト幅に対応した粒度分 布を有する粉末が得られ、 その結果、 混合粉末の粒度分布が相対的 に広がるためであると考えられる。 また、 デンドライ ト幅が異なる 急冷合金から得られた粉末粒子のァスぺク ト比が互いに異なること も影響していると考えられる。 例えば、 混合粉末の一方の急冷合金 の平均デンドライ ト幅が平均粒径以上であり、 他方の急冷合金の平 均デンドライ ト幅が平均粒径未満であるという関係を満足するよう\n\nに、 それぞれの急冷合金のデンドライ ト幅を制御することによって. ァスぺク ト比が異なる粒子からなる粉末が得られる。\n\n【0032】なお、 この急冷合金の組織を特徴付けるデンドライ ト幅として、 その平均値 （平均デンドライ ト幅） を用いる。 また、 平均デンドラ イ ト幅は、 断面顕微鏡観察において、 一定幅 （例えば 2 0 ^ m〜 5 0 m) 内に存在するデンドライ 卜の本数を数え、 平均値を算出す ることによって求めた （ 「線分法」 と呼ばれることもある。 ） 。 な お、 試料数は 5個以上とした。\n\n【0033】本発明による希土類合金粉末の製造方法は、 （ a ) 第 1の組成を 有する第 1希土類合金の溶湯から急冷法によって作製された急冷合 金であって、 平均デンドライ ト幅が第 1の範囲内にある柱状組織を 有する第 1希土類急冷合金を用意する工程と、 （b ) 第 2の組成を 有する第 2希土類合金の溶湯から急冷法によって作製された急冷合 金であって、 平均デンドライ ト幅が第 1希土類急冷合金よりも小さ く、 且つ第 2の範囲内にある柱状組織を有する第 2希土類急冷合金 を用意する工程と、 （ c ) 第 1希土類急冷合金を粉碎することによ つて第 1希土類合金粉末を作製する工程と、 （d ) 第 2希土類急冷 合金を粉砕することによって第 2希土類合金粉末を作製する工程と， ( e ) 第 1希土類合金粉末と第 2希土類合金粉末とを含む、 粉末混 合物を作製する工程とを包含する。\n\n【0034】第 1の範囲は 3 m以上 6 m以下であることが好ましく、 第 2 の範囲は 1 . 5 ^ m以上 2. 5 以下であることが好ましい。 第 1希土類合金粉末の平均デンドライ ト幅が 6 を超えると保磁力 が低下するという不具合が発生することがあり、 3 i m未満である\n\n【0035】0\n\nと充填性が低下するという不具合が発生することがある。 また、 第\n\n【0036】2希土類合金粉末の平均デンドライ ト幅が 2 . 5 を超えると充 填性および Zまたは焼結性が低下するという不具合が発生すること があり、 1 . 5 m未満であると均一な組織を形成することが難し いという不具合が発生することがある。\n\n【0037】なお、 第 1希土類合金粉末の平均デンドライ ト幅を平均粒径以上 に設定し、 第 2希土類合金粉末の平均デンドライ ト幅を平均粒径未 満に設定することが好ましい。 このように設定すると、 第 1希土類 合金粉末の粒子のァスぺク ト比と第 2希土類合金粉末の粒子のァス ぺク ト比が互いに異なる結果、 混合粉末の充填性が改善されると考 えられる。 特に、第 1希土類合金粉末の平均粒径と第 2希土類合金 粉末の平均粒径とを略等しくした場合に効果的である。\n\n【0038】混合粉末に含まれる第 1希土類急冷合金と第 2希土類合金粉末と の体積比率は、 9 5 : 5〜 6 0 : 4 0の範囲内にあることが好まし く、 8 0 ： 2 0〜 7 0 ： 3 0の範囲内にあることがさらに好ましいc混合比率が上記の範囲を外れると充填性の改善効果が十分に得られ ないことがある。 第 1希土類合金粉末および第 2希土類合金粉末に 加えて、 平均デンドライ ト幅が異なる第 3希土類合金粉末を混合し ても良い。\n\n【0039】平均デンドライ ト幅の異なる急冷合金は、 例えば、 急冷速度を変 えることによって作製することができる。 ストリップキャスト法を 用いる場合、 例えば、 冷却ロールの周速度を変えることによって急 冷速度を調節することができる。 ストリップキャスト法は量産性に 優れるという利点を有している。 また、 デンドライ ト幅が比較的大\n\nきな急冷合金は、 急冷速度が比較的遅い遠心铸造法によって製造す ることもできる。\n\n【0040】平均デンドライ 卜幅の異なる急冷合金は、 合金原料の組成を変え ることによって作製することもできる。 もちろん、 合金原料の組成 と急冷速度との両方を調節してもよい。 例えば、 ストリップキャス ト法を用いて急冷合金を作製する場合には、 第 1希土類急冷合金は 3 0質量％以上 3 2質量％以下の Rを含むことが好ましく、 第 2希 土類急冷合金は 3 3 . 5質量％以上 3 5質量％以下の Rを含むこと が好ましい。 第 1希土類合金および第 2希土類合金の組成が上記範 囲から外れると、 所望のデンドライ ト幅の急冷合金を得ることが困 難になる。\n\n【0041】平均デンドライ ト幅が異なる急冷合金から得られた第 1希土類合 金粉末と第 2希土類合金粉末との混合粉を得るための混合工程は適 当な段階で行えばよい。 急冷合金は、 典型的にはフレーク状であり、 成形工程に供する合金粉末を得るまでに、 2段階の粉碎工程 （粗粉 砕工程および微粉碎工程） を経る。 このプロセスにおいて、 急冷合 金フレークの段階、 急冷合金フレークを粗粉碎することによって粗 粉末の段階、 または粗粉末を微粉砕することによって得られた微粉 末 （上記第 1希土類合金粉末および第 2希土類合金粉末に対応） の 段階のいずれの段階で混合してもよい。\n\n【0042】なお、 合金原料の酸化を抑制するために、 微粉末よりも合金フレ ークまたは粗粉末の段階で混合することが好ましく、 混合工程と粉 碎工程とを同時に実行することもできる。 勿論、 配合比率を決定す\n\nる前に、 それぞれの希土類合金原料 （合金フレーク、 粗粉末または 粉末） の組成分析を行うことが好ましい。\n\n【0043】最終的にプレス成形に供される合金粉末の平均粒径は、 約 1 m 〜約 1 0 mの範囲内にあることが好ましく、 1 . 5 m〜7 m の範囲内にあることが更に好ましい。 急冷合金粉末の表面には、 必 要に応じて、 酸化の抑制および Zまたは流動性やプレス成形性を改 善するために潤滑剤を付与してもよい。 潤滑剤の付与は、 急冷合金 の粗粉末を微粉砕する工程で実行することが好ましい。 潤滑剤とし ては、 脂肪酸エステルを主成分とする液体潤滑剤を好適に用いるこ とができる。\n\n【0044】上述のようにして得られた混合粉末を用いて、 公知の成形方法に よって成形体を作製し、 公知の方法で焼結磁石を作製することがで きる。\n\n【0045】急冷合金粉末 （混合粉末） のプレス成形 （例えば一軸プレス成 形） は、 例えば、 電動プレスを用い、 約 1 . 5 Tの磁界中で配向さ せつつ、 1 . S t o n Z c m2( 1 5 0 M P a ) の圧力で行なわれ る。 ここで、 急冷合金粉末をプレス装置のキヤビティに充填する際 に、 本発明の実施形態による急冷合金粉末は充填性に優れるので、 従来よりも充填密度を向上することができる。 従って、 比較的低い 温度でも所定の密度の焼結体を得ることができる。 すなわち、 焼結 過程において結晶粒が過大に成長することを抑制できる結果、 従来 よりも保磁力の高い焼結磁石を得ることができる。\n\n【0046】得られた成形体を、 例えば約 1 0 0 0 °C以上約 1 1 0 0 以下の 温度で、 不活性ガス （希ガスや窒素ガス） 雰囲気下 （減圧されてい\n\nることが好ましい） 、 または真空中で、 約 1〜 5時間焼結する。 得 られた焼結体を、 例えば約 4 5 0 C〜約 8 0 0 °Cの温度で、 約 1〜 8時間時効処理することによって、 R— F e _B系合金焼結体が得 られる。 なお、 焼結体に含まれる炭素の量を減らし、 磁気特性を向 上するために、 上記焼結工程の前に、 必要に応じて、 合金粉末の表 面を覆う潤滑剤を加熱除去してもよい。 加熱除去工程は、 潤滑剤の 種類にもよるが、 例えば、 約 1 0 0 から 6 0 0 °Cの温度で、 減 圧雰囲気下で、 約 3〜約 6時間実行される。\n\n【0047】得られた焼結体を着磁することによって、 焼結磁石が完成する。 着磁工程は、 焼結工程後の任意の時点で実行することが可能で、 モ —夕等の装置に組み込まれた後で実行されることもある。 着磁磁界 は、 例えば、 2 MAZm以上である。\n\n【0048】[実施例]\n\n【0049】以下、 本発明による R— F e— B系焼結磁石の製造方法について、 実施例を挙げて説明するが、 本発明は以下の実施例によって何ら限 定されるものではない。\n\n【0050】第 1希土類合金の組成は、 N d + P r +D y : 3 1. 3質量％ (D y 1. 2質量％以上 2. 0質量％以下、 残部が N d + P r ) 、 B ： 1. 0質量％、 C 0 ： 0. 9質量％、 A 1 : 0. 2質量％、 C u ： 0. 1質量％、 残部 ： F eおよび不可避不純物である。 この組 成の第 1希土類合金を約 1 3 5 0 °Cで溶解し、 得られた合金溶湯か らストリップキャスト法を用いて、 急冷合金 （合金フレーク） を作 製した。 冷却ロールの周速度を 6 0 m/m i nとすることによって、 厚さが約 0. 3 mmの合金フレークを得た。 この合金フレークの断\n\n面を顕微鏡で観察した結果、 チル晶を実質的に含まず、 実質的に柱 状晶のみからなる急冷合金であることを確認した。 また、 平均デン ドライ ト幅は、 約 4 mであった。\n\n【0051】一方、 第 2希土類合金の組成は、 N d + P r +D y : 3 4. 5質 量％ (D y 1. 0質量％以上 2. 0質量％以下、 残部が N d + P r ) 、 B ： 1. 0質量％、 C o ： 0. 9質量％、 A 1 : 0. 2質 量％、 C u ： 0. 1質量％、 残部： F eおよび不可避不純物である, この組成の第 2希土類合金を約 1 3 5 0 °Cで溶解し、 得られた合金 溶湯からストリップキャスト法を用いて、 急冷合金 （合金フレー ク） を作製した。 冷却ロールの周速度を 9 0 m/m i nとすること によって、 厚さが約 0. 2 mmの合金フレークを得た。 この合金フ レークの断面を顕微鏡で観察した結果、 チル晶を実質的に含まず、 実質的に柱状晶のみからなる急冷合金であることを確認した。 また, 平均デンドライ ト幅は、 約 2 zmであった。\n\n【0052】(実施例 1 )\n\n【0053】本実施例では、 上述の様にして作製された第 1および第 2希土類 合金フレークを例えば水素化粉碎法を用いてそれぞれ別々に粗粉碎 した。 得られた粗粉末をロッキングミキサ一 （回転式混合装置） を 用いて混合した。 混合比率 （体積基準） は、 7 5 : 2 5とした。 得られた混合粗粉末をジェットミル装置を用いて、 平均粒径が約\n\n【0054】3 mとなるように微粉砕した。 なお、 粗粉末を混合する前に所定 量ずっジエツ トミル装置に投入し、 微粉砕しながら混合するように しても良い。 この後、 脂肪酸エステルを主成分とする潤滑剤を約 0. 3質量％添加し混合した。\n\n【0055】5\n\n得られた混合粉末をプレス成形 （プレス圧力 I t o n/ c m2、 配向磁界 1. 5 T) ) することによって、 成形体 （縦 1 8 mmX横 5 5：11111 高さ 2 511 111 (プレス方向） ） を得た。 なお、 配向磁界 の方向は成形方向に直角である。 得られた成形体の質量は、 1 0 0 gである。\n\n【0056】1 0 5 O で 4時間、 減圧 A r雰囲気中で焼結し、 その後、 5 0 0 °Cで 1時間の時効処理を施した。 その後、 パルス着磁装置を用い て着磁した後、 サーチコイルおよびフラックスメータを用いて、 得 られた焼結磁石の磁気特性を評価した。 また、 充填密度は、 タップ デンサによって評価した。 ここでいう充填密度は、 タップデンサに よって求められたかさ密度を指す。 結果を表 1に示す。\n\n【0057】(実施例 2 )\n\n【0058】実施例 1 と同様にして第 1希土類合金の粗粉末および第 2希土類 合金の粗粉末を作製した後、 それぞれ、 別々にジェッ トミル装置を 用いて微粉碎し、 平均粒径が約 3 mの第 1希土類合金粉末および 第 2希土類合金粉末を得た。 これらの微粉末を 7 5 : 2 5の比率で 口ッキングミキサーを用いて混合することによって、 混合粉末を得 た。 このあと、 実施例 1と同様にして、 焼結磁石を作製し、 磁気特 性を評価した。\n\n【0059】(実施例 3 )\n\n【0060】第 1希土類急冷合金を遠心铸造法で作製した以外は、 実施例 1 と 同様にして、 焼結磁石を作製した。 遠心铸造法で作製した第 1希土 類急冷合金はチル晶を実質的に含まず、 実質的に柱状晶のみからな\n\nる急冷合金であることを確認した。 また、 平均デンドライ ト幅は、 約 2 0 / mであった。\n\n【0061】(比較例 1 )\n\n【0062】希土類合金の組成は、 N d + P r +D y : 3 2. 0質量％ (D y 1. 0質量％以上 2. 0質量％以下、 残部が N d + P r ) 、 B ： 1 , 0質量％、 C ο ： 0. 9質量％、 A 1 ： 0. 2質量％、 C u : 0. 1質量％、 残部： F eおよび不可避不純物である。 この組成の第 1 希土類合金を約 1 3 5 0 °Cで溶解し、 得られた合金溶湯からストリ ップキャスト法を用いて、 急冷合金 （合金フレーク） を作製した。 冷却ロールの周速度を 1 0 0 mZm i nとすることによって、 厚さ が約 0. 3 mmの合金フレークを得た。 この合金フレークの断面を 顕微鏡で観察した結果、 チル晶を 1 0体積％含む急冷合金であるこ とを確認した。 この後、 実施例 1 と同様に粗粉砕、 微粉砕工程を経 て、 成形体を作製し、 焼結磁石を作製した。\n\n【0063】(比較例 2 )\n\n【0064】比較例 1と同じ組成の希土類合金を用いて、 ストリップキャスト 法で急冷合金 （合金フレーク） を作製した。 冷却ロールの周速度を 7 0 mZm i nとすることによって、 厚さが約 0. 3mmの合金フ レ一クを得た。 この合金フレークの断面を顕微鏡で観察した結果、 チル晶を実質的に含まない急冷合金であることを確認した。 この後， 実施例 1 と同様に粗粉碎、 微粉砕工程を経て、 成形体を作製し、 焼 結磁石を作製した。\n\n【0065】(比較例 3 )\n\n【0066】7\n\n比較例 1 と同じ組成の希土類合金を用いて、 遠心铸造法で急冷合 金を作製した。 この急冷合金の断面を顕微鏡で観察した結果、 チル 晶を実質的に含まず、 実質的に柱状晶のみからなる急冷合金である ことを確認した。 また、 平均デンドライ ト幅は、 約 2 5 mであつ た。 この後、 実施例 1 と同様に粗粉砕、 微粉砕工程を経て、 成形体 を作製し、 焼結磁石を作製した。\n\n【0067】[表 1 ]\n\n【0069】表 1の結果からわかるように、 実施例 1から 3の希土類合金粉末 (混合粉末） は、 比較例 1から 3 (未混合粉末) よりも充填密度が 高く、 その結果、比較的低い焼結温度で焼結しても所望の密度 （ 7 .\n\n【0070】5 g / c m3) を得ることができ、 保磁力 H e Jが高い。\n\n【0071】遠心铸造法を用いて作製した第 1希土類急冷合金 （平均デンドラ イ ト幅約 2 0 m ) を用いた実施例 3は、 ストリップキャスト法を 用いて作製した第 1希土類急冷合金 （平均デンドライ ト幅約 4 n m) を用いた実施例 1および 2よりも磁気特性が劣る。 このことか ら、 ストリップキャスト法を用いて急冷合金を作製することが好ま しいことがわかる。\n\n【0072】8\n\n次に、 平均デンドライ 卜幅の好ましい範囲を検討するための実験 を行った結果を説明する。\n\n【0073】第 1希土類合金および第 2希土類合金としてそれぞれ上記実施例 と同じ組成の合金を用い、 ストリップキャスト法の条件を変えるこ とによって、 デンドライ ト幅の異なる第 1希土類急冷合金および第 2希土類急冷合金を作製した。 それぞれの試料の平均デンドライ ト 幅,を表 2に示す。 第 1希土類急冷合金および第 2希土類急冷合金の 作製以降は、 実施例 2と同様にして、 焼結磁石を作製した。 但し、 焼結温度は、 それぞれ表 3に示した温度とした。 得られた焼結磁石 の磁気特性を評価した。 その結果を表 3に示す。\n\n【0074】[表 2 ]\n\n【0076】[表 3 ]\n\n【0077】試料 1 試料 2 試料 試料 4\n\n【0078】Br\n\n【0079】1.38 1.38 1.37 1.38\n\n【0080】(T)\n\n【0081】1215. 5 1215. 3 1154.0\n\n【0082】BHmax\n\n【0083】366 366 362 366\n\n【0084】(kJ/m3)\n\n【0085】充填密度\n\n【0086】2.2 2.2 2. 2 2.2\n\n【0087】(g/cm3)\n\n【0088】焼結温度\n\n【0089】1040 1040 1040 1050\n\n【0090】O\n\n表 3に示したように、 第 1希土類急冷合金の平均デンドライ ト幅 が 8 xmの試料 4は、 他の試料よりも保磁力 H c Jが低い。 このよ うに、 保磁力の観点から、 第 1希土類急冷合金の平均デンドライ ト 幅は 6 im以下であることが好ましい。 なお、 第 1希土類急冷合金 の平均デンドライ ト幅が大きい方が、 残留磁束密度 B rが増大し、 保磁力 H e Jが減少す ooる傾向になる。\n\n【0091】また、 第 2希土類急冷合金の平均デンドライ ト幅が 1. 5 m以 上 2. 5 /xm以下の範囲内にあれば、 磁気特性は実質的な差は見ら れない。 なお、 当然のことながら、 第 1希土類合金粉末の平均デン ドライ ト幅が 3 xm未満で、 第 2希土類合金粉末の平均デンドライ ト幅が 2. 5 zmを超えると、 2種類の希土類合金粉末を混合する ことによって得られる充填性の向上効果が得られ無くなる。 なお、 種々実験した結果、 平均デンドライ ト幅が 1. 5 /m未満の希土類 急冷合金を得ることは困難であり、 平均デンドライ ト幅 1. 5 m が最小値ということになる。\n\n【0092】次に、 実施例 2と同じ第 1希土類合金粉末と第 2希土類合金粉末 とを用いて、 混合比率 （体積比率） の最適な範囲を検討した実験結 果の例を説明する。 表 4に第 1希土類合金粉末と第 2希土類合金粉 末との体積比率および夕ップデンサで求めた充填密度 （かさ密度） を示す。\n\n【0093】[表 4]\n\n【0094】試料 5 試料 6 試料 7 試料 8 試料 9 試料 10 体積比率\n\n【0095】95： 5 70:30 60： 40 50:50 30:70 充填密度\n\n【0096】2.1 2.2 2.2 2.1 1.9 1.8 g/cmu)\n\n表 4の結果からわかるように、 第 1希土類急冷合金粉末と第 2希 土類合金粉末との体積比率は、 9 5 ： 5〜 6 0 ： 4 0の範囲内にあ ることが好ましく、 特に、 8 0 ： 2 0〜 7 0 ： 3 0の範囲内にある ことが好ましい。 このような配合比率によって充填性が改善される 理由は必ずしも明らかではないが、 第 1希土類合金粉末によって形 成される間隙を第 2希土類合金粉末が埋めるのに適した体積比率で あると考えられる。 産業上の利用可能性\n\n【0097】本発明によると、 チル晶を実質的に含まず、 且つ、 従来よりも充 填性が優れた希土類急冷合金の粉末を製造する方法およびそのよう な粉末を用いた希土類焼結磁石の製造方法が提供される。', '[0001]文献稀土合金粉末的制造方法和稀土烧结磁铁的制造方法技术领域\n\n  稀土烧结磁体的制造方法技术领域本发明涉及一种稀土烧结磁体的制造方法，尤其是一种R-Fe-B系烧结磁体，以及一种用于生产稀土烧结磁体的稀土合金粉末的制备方法。 背景技术\n\n   [0003]稀土合金烧结磁体（永磁体）通常是通过将稀土合金粉末压制成型，将所得粉末烧结成粉末并根据需要进行时效来制造的。 有待完成。 当前，两种类型的磁体，稀土·钴（通常是mar·钴）磁体和稀土·铁·花粉（通常是钕·铁·硼）磁体已广泛用于各个领域。 有。 其中，存在各种稀土类铁硼磁体（以下称为“ RF e-B磁体”。R为包括Y的稀土元素，Fe为铁，B为硼）。 它在所有磁体中具有最高的最大磁能积，并且价格相对较低，因此被广泛用于各种电子设备中。\n\n   [0004]R-Fe-B烧结磁体主要由R2Fe1 4B（“ R2Fe1 4有时被称为“ B型晶体层”），由由N d等组成的富R相和富B相组成。 请注意，F e的一部分可以用诸如C o或N i的过渡金属代替，\n\n B的一部分可以用C代替。 优选地应用本发明的基于R fB的烧结磁体例如是美国专利第4,770,723号和美国专利第4,370,337号。 在规范中对其进行了描述。 美国专利No.4,770,723和美国专利No.4:792,368的全部公开内容通过引用并入本文。 过去已经使用铸锭法来生产形成这种磁体的R_Fe-B基合金。 根据一般的铸锭法，将原料稀土金属，电解铁和铁硼酸合金高频熔融，并在铸模中将所得的熔体相对缓慢地冷却而形成固体。 制造合金（合金锭）t。此外，还已知通过Ca还原法（也称为还原扩散法）得到固体合金的方法。\n\n   [0005]近年来，通过使熔融合金与单辊，双辊，旋转盘或旋转圆柱型内表面接触，已相对较快地冷却，并从熔融合金凝固成比铸锭更薄的固体。 以带材铸造法和离心铸造法为代表的淬火法（有时也称为“液态淬火法”）成为代表。\n\n   [0006]在本说明书中，将通过淬火法获得的固体合金称为“淬火合金（或快速凝固的合金）”，并且与通过常规铸锭法或Ca还原法获得的固体合金区分开。 我会决定的。 淬火合金通常具有薄片或or子的形式。\n\n   [0007]与通过传统的铸锭法（压铸法）生产的固体合金（锭合金）相比，淬火合金的时间相对较短。\n\n （冷却速度：102°○//3 6以上2 1 043 6以下），组织变细，晶粒尺寸变小。 它具有功能。 此外，由于晶界的面积大且富R相在晶界内广泛分布，因此具有富R相分散性也优异的优点。 由于这些特性，可以通过使用淬火合金来制造具有优异的磁性能的磁体。\n\n   [0008]通过例如通过氢化粉末法和/或各种机械破碎法（例如使用极磨机或归因机）将这些淬火合金破碎而获得要进行压制成型的合金粉末。 所获得的粗粉（例如，平均粒径为10m至500m）通过使用例如喷射磨的干磨法细粉碎。 从磁性的观点出发，用于压制成型的合金粉末的平均粒径优选在1m以上且10m以下的范围内，并且在1.5m以上且7m以下的范围内。 更优选。 除非另有说明，否则粉末的“平均粒径”是指F S S S粒径。\n\n   [0009]通常通过单轴压制工艺将由此获得的淬火合金的粉末加工成压坯。 淬火合金的粉末的问题在于，由于其制造方法，该粉末具有窄的粒度分布，填充性差，并且不能以期望的填充密度填充到腔体中。 因此，正在研究各种措施以改善淬火合金的粉末填充性能。 例如，在日本专利特开No.2000-219942中，使用辊骤冷法来制备包含1％至30％的体积分数的晶粒尺寸为3im或更小的冷硬晶体的淬火合金。 通过粉碎获得\n\n 据描述，与常规方法相比，淬火合金粉末的使用提高了填充率并降低了烧结温度。\n\n   [0010]“冷却晶体”是指熔融的R-Fe-B系稀土合金与淬火器的冷却辊等冷却部件的表面接触而开始凝固时的初期的辊表面。 它是在附近形成的晶相，比在冷却凝固过程的初始阶段后形成的柱状结构（树状结构）具有相对各向同性（各向同性）和更精细的结构。 即，通过快速冷却和凝固在辊表面上形成冷却晶体。 发明内容\n\n   [0011]但是，由于激冷晶体具有各向同性的磁组织，因此，如果淬火合金的粉末中含有许多激冷晶体，则最终得到的烧结磁铁的磁特性会变差。 存在减少的问题。\n\n   [0012]鉴于上述要点而做出了本发明，并且本发明的主要目的是淬火稀土淬火，该稀土淬火基本上不包含激冷晶体并且在填充性方面优于常规淬火晶体。 本发明的目的是提供一种生产合金粉末的方法和使用这种粉末的稀土烧结磁体的生产方法。\n\n   [0013]本发明的稀土合金粉末的制造方法为R2T1 4A（R为含有Y，T为F e或Fe和Fe以外的稀土元素。 具有至少一种过渡金属元素的混合物（其中A是硼或硼和碳的混合物）是用于生产稀土合金粉末的方法，该稀土合金粉末用于生产具有组成主相的稀土烧结磁体。 由淬火方法由具有第一组成的第一稀土合金的熔融金属制造的淬火合金。\n\n 因此，制备了由具有第二组成的熔融第二稀土合金制备具有平均枝晶宽度在第一范围内的柱状结构的第一稀土淬火合金的方法和淬火方法。 第2稀土类淬火合金和第1稀土类淬火合金的柱状组织的平均枝晶宽度在第2范围内，该第二范围小于第1稀土类淬火合金。 通过研磨制备第一稀土合金粉末的步骤，通过粉碎第二稀土淬火合金来制备第二稀土合金粉末的步骤，制备第一稀土合金粉末和第二稀土的步骤 以及制备包含合金粉末的粉末混合物的步骤，从而实现上述目的。\n\n   [0014]在一个实施例中，第一范围等于或大于第一稀土合金粉末的平均粒径，并且第二范围小于第二稀土合金粉末的平均粒径。  ..\n\n   [0015]第一范围优选为6； Li m以下，并且第二范围优选为1.5μm以上且2.5以下。\n\n   [0016]根据一个实施方案的用于制备稀土合金粉末的方法包括粗粉碎第一稀土淬火合金以获得第一稀土合金粗粉的步骤，以及粗粉碎第二稀土淬火合金的步骤。 通过将第一和第二稀土淬火合金粗粉混合以获得混合粗粉，并通过将混合粉细磨以获得平均粒径，从而获得第二稀土合金粗粉。 在1 / m以上且10以下的范围内。\n\n 根据一个实施方案的制备稀土合金粉末的方法，其中所述第一稀土淬火合金的平均粒径为1m以上10\n\n 从以下范围制造第一稀土粉末的步骤，从第二稀土淬火合金制造平均粒径在1m以上且10im以下的第二稀土粉末的步骤，以及 将第一稀土粉末和第二稀土粉末混合以获得粉末混合物。\n\n   [0017]混合粉末中所含的第一稀土淬火合金和第二稀土合金粉末的体积比优选在95：5至60:40的范围内。 甚至更优选在80:20至70:30的范围内。\n\n   [0018]在一个实施方式中，第二稀土淬火合金通过带式铸造方法生产。\n\n   [0019]在一个实施例中，第一稀土淬火合金是通过带材铸造法生产的。\n\n   [0020]在一个实施例中，第一稀土淬火合金通过离心铸造方法生产。\n\n   [0021]在一个实施方式中，第一稀土淬火合金含有30质量％以上且32质量％以下的R。 在一个实施方式中，上述第二稀土淬火合金含有32.5质量％以上且35质量％以下的R 2。\n\n   [0022]R2T14A（R是包括Y的稀土元素，T是F e或F e和F e以外的其他元素。 具有至少一种过渡金属元素的混合物，A为硼或硼与碳的混合物，以及具有主相的稀土烧结磁体\n\n 一种通过上述制造方法中的任何一种制造的稀土合金粉末的制备方法，通过将包含稀土合金粉末的粉末材料压制成型而形成成型体的步骤以及成型体 以及一种烘烤步骤，由此实现了上述目的。 附图的简要说明\n\n   [0023]图1是基本上不包含激冷晶体的淬火合金的截面显微照片。 \n\n [0024]图2是具有包含激冷晶体的结构的淬火合金的截面显微照片。 实施本发明的最佳模式\n\n   [0025]在下文中，将参照附图描述根据本发明的用于制造RF_B_B稀土烧结磁体的方法的实施方式。\n\n   [0026]在本说明书中，R-Fe-B系烧结磁体的主相的组成由R2T14A的组成式表示。 该主相具有R2T14A型（Nd2Fe14B型）晶体结构（四方）。\n\n   [0027]，其中R是稀土元素（包括Y），T是F e或F e和除F e之外的至少一种过渡金属元素的混合物，并且A是po或硼和碳。 它是一种混合物。 稀土元素R优选包含N d和P r的至少一种轻稀土元素，并且从矫顽力的观点来看，选自D y，H o和T b的至少一种。 优选包括一种重稀土元素。 光\n\n 稀土元素优选占整个稀土元素R的至少50原子％。 另外，除F e以外的过渡金属元素为T i，V，C r，M n，F e，C o，N i等，并且所有T均为F e或F e之一。 其中一部分被N i和C o中的至少一个取代的那些是优选的。\n\n   [0028]在烧结磁铁的整体组成中，R为25质量％〜40质量％，A为0.6质量％〜1.6质量％，余量为T和微量添加元素（不可避免）。 从磁性的观点出发，优选包含杂质。 痕量添加元素优选为Al，Cu，Ga，Cr，Mo，V，Nb和Mn中的至少一种。 优选为1质量％以下。 本发明是基于下述新发现而完成的，这些新发现是通过检查淬火合金的粉末的填充特性与淬火合金的结构之间的关系而获得的。\n\n   [0029]制备具有上述期望组成的稀土合金原料的熔融合金并进行淬火以制备淬火合金时，取决于其组成和Z或淬火条件，具有各种结构的淬火合金。 获得合金。 例如，带材浇铸方法（参见，例如，美国专利号5,666,635，美国专利No. 当通过使用（1）制备淬火合金时，如果冷却辊的圆周速度相对较高，则形成如图2所示的包含激冷晶体的结构。 图2所示的淬火合金的截面显微照片表明，形成了约10％（体积）的激冷晶体。\n\n 另一方面，当辊的圆周速度相对较低时，如图1所示，形成了基本上没有激冷晶体并且仅具有枝晶结构（柱状结构或柱状晶体）的结构。 此外，即使在基本上仅包括树枝状结构的结构的情况下，随着辊的圆周速度变慢，树枝状结构的宽度也变宽。\n\n   [0030]这种淬火合金的结构差异也根据合金的组成而变化。 例如，比较相同的快速冷却条件（例如，冷却辊的圆周速度），随着R含量的增加，枝晶的宽度趋于减小。\n\n   [0031]以这种方式，制造了具有不同结构的淬火合金，并且在规定的条件下通过压碎工艺，压模成​​型工艺和烧结工艺制造了烧结磁体，并且 评价了粘结磁铁的磁特性，并评价了压制成型用合金粉的填充特性，结果，将由树枝状宽度不同的淬火合金制成的合金粉混合使用时， 发现填充性能得到改善，结果烧结磁体的磁性能得到改善。 其原因是，当粉碎具有不同枝晶宽度的淬火合金时，获得具有对应于各个枝晶宽度的粒度分布的粉末，结果，混合粉末的粒度分布相对变宽。 可以想象的是。 还认为，由具有不同枝晶宽度的淬火合金获得的粉末颗粒的长径比彼此不同的事实也受到影响。 例如，为了满足混合粉末的一种淬火合金的平均枝晶宽度等于或大于平均晶粒尺寸，而另一种淬火合金的平均枝晶宽度小于平均晶粒尺寸的关系。\n\n 另外，通过控制每种淬火合金的枝晶宽度，可以获得由具有不同长径比的颗粒组成的粉末。\n\n   [0032]作为表征该淬火合金的组织的枝晶宽度，使用平均值（平均枝晶宽度）。 通过在横截面显微镜中对一定宽度（例如20μm至50m）内的树枝状晶体的数目进行计数并计算平均值来获得平均树枝状晶体宽度。 也称为线段法。） 样品数为5以上。\n\n   [0033]根据本发明的稀土合金粉末的制备方法是：（a）通过淬火方法由具有第一组成且平均枝晶宽度为1的第一稀土合金的熔融金属制备的淬火合金。 制备具有在（1）和（b）范围内的柱状结构的第一稀土淬火合金的步骤，所述淬火合金是由具有第二组成的第二稀土合金的熔体通过淬火方法制备的， 制备平均枝晶宽度小于第一稀土淬火合金的平均枝晶宽度并且具有第二范围内的柱状结构的第二稀土淬火合金的步骤；以及（c）研磨第一稀土淬火合金。 为了生产第一稀土合金粉末，（d）通过粉碎第二稀土淬火合金来生产第二稀土合金粉末，以及（e）生产第一稀土合金粉末和第二稀土合金。 包括合金粉末在内的粉末混合物的制造方法 它包围了门。\n\n   [0034]第一范围优选为3m以上且6m以下，并且第二范围优选为1.5μm以上且2.5以下。 如果第一稀土合金粉末的平均枝晶宽度超过6，则可能会出现矫顽力降低且小于3μm的问题。\n\n   [0035]0\n\n 因此，可能发生填充性劣化的问题。 另外，\n\n   [0036]2如果稀土合金粉末的平均枝晶宽度超过2.5，则填充性和Z或烧结性可能变差，而如果小于1.5 m，则其可能是均匀的。 可能会出现难以形成精细结构的问题。\n\n   [0037]优选将第一稀土合金粉末的平均枝晶宽度设定为等于或大于平均粒径，并且将第二稀土合金粉末的平均枝晶宽度设定为小于平均粒径。 通过该设定，第一稀土合金粉末的颗粒的粒径比和第二稀土合金粉末的颗粒的粒径互不相同，其结果，混合粉末的填充性提高。 可以想象的。 当使第一稀土合金粉末的平均粒径和第二稀土合金粉末的平均粒径基本相等时，这是特别有效的。\n\n   [0038]混合粉末中所含的第一稀土淬火合金和第二稀土合金粉末的体积比优选为95：5〜60：40、80：80的范围。 更优选在20〜70∶30c的范围内。如果混合比在上述范围以外，则无法充分获得提高填充性的效果。 除了第一稀土合金粉末和第二稀土合金粉末之外，可以混合具有不同平均枝晶宽度的第三稀土合金粉末。\n\n   [0039]例如可以通过改变淬火速度来制造具有不同的平均枝晶宽度的淬火合金。 例如，当使用带铸法时，可以通过改变冷却辊的圆周速度来调节淬火速率。 条带铸造法具有批量生产性优异的优点。 另外，枝晶宽度相对较大。\n\n 也可以通过离心铸造来生产变态淬火合金，该淬火速率相对较慢。\n\n   [0040]也可以通过改变合金原料的成分来生产具有不同平均枝晶宽度的淬火合金。 当然，合金原料的组成和淬火速率都可以调整。 例如，在使用带坯连铸法制造淬火合金的情况下，第一稀土淬火合金优选含有30质量％以上且32质量％以下的R，第二稀土淬火合金为R。  R的含量优选为33.5质量％以上且35质量％以下。 当第一稀土合金和第二稀土合金的组成偏离上述范围时，变得难以获得具有期望的枝晶宽度的淬火合金。\n\n   [0041]可以在适当的阶段进行用于获得由具有不同平均枝晶宽度的淬火合金获得的第一稀土合金粉末和第二稀土合金粉末的混合粉末的混合步骤。 淬火合金通常为薄片状，并且在获得要用于成型工艺的合金粉末之前要经过两步铣削工艺（粗铣削工艺和精细铣削工艺）。 在该过程中，进行合金薄片的淬火步骤，通过研磨淬火的合金薄片的粗粉末的步骤，或通过将粗粉末粉碎而获得的细粉末（上述的第一稀土合金粉末和第二稀土粉末）。 混合可以在任何阶段进行（对应于合金粉末）。\n\n   [0042]为了抑制合金原料的氧化，优选在合金薄片或粗粉阶段而不是细粉阶段进行混合，并且混合步骤和研磨步骤可以同时进行。  .. 当然要确定混合比例\n\n 在上述之前，优选分析每种稀土合金原料（合金薄片，粗粉或粉末）的组成。\n\n   [0043]最终进行压制成型的合金粉末的平均粒径优选在约1m至约10m的范围内，并且在1.5m至7m的范围内。 更优选。 如果需要，可以在淬火的合金粉末的表面添加润滑剂，以抑制氧化并改善Z或流动性和压制成形性。 优选在将淬火合金的粗粉微粉碎的步骤中施加润滑剂。 作为润滑剂，可以优选使用以脂肪酸酯为主要成分的液体润滑剂。\n\n   [0044]使用如上所述获得的混合粉末，可以通过已知的成型方法来制造成型体，并且可以通过已知的方法来制造烧结磁体。 \n\n [0045]淬火合金粉末（混合粉末）的压制成型（例如，单轴压制成型）是使用例如电动压制成型的，同时定向在约1.5T和1.Ston Z cm的磁场中。  2在（150 MPa）的压力下执行。 在此，当将淬火合金粉末填充到压力机的腔室中时，根据本发明的实施方式的淬火合金粉末具有优异的填充性能，因此与常规情况相比可以提高填充密度。 因此，即使在相对较低的温度下也可以获得具有预定密度的烧结体。 即，通过抑制在烧结过程中晶粒的过度生长，可以得到矫顽力比以前高的烧结磁铁。\n\n   [0046]在惰性气体（稀有气体或氮气）气氛（减压）下，将得到的成型品在例如约100℃以上且约1100以下的温度下加热。\n\n 或）在真空中约1-5小时。 所获得的烧结体例如在约450℃至约800℃的温度下时效约1至8小时，以获得RFe_B基合金烧结体。 为了减少烧结体中所含的碳量并改善磁性，如果需要，可以在上述烧结过程之前通过加热除去覆盖合金粉末表面的润滑剂。 好。 取决于润滑剂的类型，在例如大约100至600℃的温度下在减压气氛下执行排热步骤大约3至大约6小时。\n\n   [0047]通过对所获得的烧结体进行磁化，从而完成了烧结磁体。 磁化步骤可以在烧结步骤之后的任何时间执行，并且可以在结合到诸如割草机的装置中之后执行。 励磁磁场例如为2MAZm以上。\n\n   [0048][示例]\n\n   [0049]以下，参照实施例对本发明的基于RFe-B的烧结磁铁的制造方法进行说明，但本发明并不限于以下的实施例。\n\n   [0050]第一稀土合金的组成为Nd + Pr + Dy：31.3质量％（Dy为1.2质量％以上且2.0质量％以下，余量为Nd + Pr。  ），B：1.0质量％，C 0：0.9质量％，A 1：0.2质量％，Cu：0.1质量％，余量：Fe和不可避免的杂质。 将这种组成的第一稀土合金在约1350℃下熔融，并通过流延铸造从所得熔融合金中制备淬火合金（合金薄片）。 通过将冷却辊的圆周速度设置为60m / min，获得了具有约0.3mm的厚度的合金薄片。 该合金薄片断开\n\n 用显微镜观察表面的结果，证实了淬火合金基本上没有激冷晶体并且基本上由柱状晶体组成。 平均枝晶宽度为约4m。\n\n   [0051]另一方面，第二稀土合金的组成为Nd + Pr + Dy：34.5质量％（Dy 1.0质量％以上2.0质量％以下，余量为N d  + P r），B：1.0质量％，Co：0.9质量％，A 1：0.2质量％，Cu：0.1质量％，余量：Fe和不可避免的杂质。 然后，将这种组成的第二稀土合金在约1350℃下熔融，并通过流延铸造法从所得的熔融合金中制备淬火合金（合金薄片）。 通过将冷却辊的圆周速度设置为90m / m in，获得了厚度约为0.2mm的合金薄片。 用显微镜观察该合金薄片的截面，结果证实该合金是一种淬火合金，它基本上不包含激冷晶体并且基本上由柱状晶体组成。 平均枝晶宽度为约2zm。\n\n   [0052]（示例1）\n\n   [0053]在该实施例中，使用例如氢化粉末研磨法将如上所述制备的第一和第二稀土合金薄片分别粗磨。 使用摇摆混合器（旋转混合器）将获得的粗粉混合。 混合比（体积基准）为75:25。 所得的混合粗粉的平均粒径通过使用气流粉碎机进行测定。\n\n   [0054]细磨至3 m。 在混合粗粉之前，可以将预定量的粗粉放入气流粉碎机中并在细粉碎的同时进行混合。 然后，添加并混合约0.3质量％的包含脂肪酸酯作为主要成分的润滑剂。\n\n   [0055]5\n\n 将获得的混合粉末压制成型（压力I ton / cm2，取向磁场1.5 T）以获得成型体（长18 mm X宽5 5：11111高2511111（ 按下方向））。 定向磁场的方向垂直于成型方向。 所得成型体的质量为100g。\n\n   [0056]在减压的Ar气氛中于105 O烧结4小时，然后在500°C时效1小时。 然后，在用脉冲磁化器磁化之后，用搜索线圈和磁通计评价所获得的烧结磁体的磁性能。 此外，通过抽头电容器评价堆积密度。 这里提到的堆积密度是指通过抽头电容器获得的堆积密度。 结果示于表1。\n\n   [0057]（示例2）\n\n   [0058]以与实施例1相同的方式制备了第一稀土合金的粗粉和第二稀土合金的粗粉后，使用喷射磨装置分别将细粉研磨细粉，并且平均粒径为约1μm。 获得3m的第一稀土合金粉末和第二稀土合金粉末。 通过使用口混合器以75∶25的比例混合这些细粉而获得混合粉。 之后，以与实施例1相同的方式制备烧结磁体，并评价其磁特性。\n\n   [0059]（示例3）\n\n   [0060]以与实施例1中相同的方式生产烧结磁体，除了通过离心铸造法生产第一稀土淬火合金。 通过离心铸造法生产的第一稀土淬火合金基本上不包含激冷晶体，并且基本上由柱状晶体组成。\n\n 可以确认该合金是淬火合金。 平均枝晶宽度约为20 / m。\n\n   [0061]（比较示例1）\n\n   [0062]稀土合金的组成为Nd + Pr + Dy：32.0质量％（Dy1.0质量％以上且2.0质量％以下，余量为Nd + Pr），  B：1.0质量％，C：0.9质量％，A 1：0.2质量％，Cu：0.1质量％，余量：Fe和不可避免的杂质。 将这种组成的第一稀土合金在约1350℃下熔融，并通过流延铸造法从所获得的熔融合金中制造淬火合金（合金薄片）。 通过将冷却辊的圆周速度设定为100mZ·m·n，可获得厚度约为0.3mm的合金薄片。 通过显微镜观察该合金薄片的截面，可以确认其为含有10体积％的冷结晶的淬火合金。 之后，与实施例1同样地，进行粗粉碎处理和微粉碎处理，制成成形体，制作了烧结磁铁。\n\n   [0063]（比较示例2）\n\n   [0064]使用具有与比较例1中相同组成的稀土合金，通过带钢铸造法生产淬火合金（合金薄片）。 通过将冷却辊的圆周速度设定为70mZ·m·n，得到厚度约为0.3mm的合金薄片。 用显微镜观察该合金薄片的截面，结果证实它是一种淬火合金，基本上不含有激冷晶体。 之后，与实施例1同样地，进行粗粉粉碎处理和微粉碎处理，从而制作成形体，并制造了烧结磁铁。\n\n   [0065]（比较示例3）\n\n   [0066]7\n\n 使用具有与比较例1相同组成的稀土合金，通过离心铸造法制造淬火合金。 通过显微镜观察淬火合金的截面，结果确认了该淬火合金基本上没有冷却晶体并且基本上由柱状晶体组成。 平均枝晶宽度约为25 m。 之后，与实施例1同样地，进行粗粉碎处理和微粉碎处理，制作成形体，并制作了烧结磁铁。\n\n   [0067][表1]\n\n   [0069]从表1的结果可以看出，实施例1至3的稀土合金粉末（混合粉末）的填充密度高于比较例1至3（未混合粉末）的填充密度，结果， 即使在较低的烧结温度下烧结，所需的密度（7。\n\n   [0070]5 g / cm3），矫顽力H e J高。\n\n   [0071]使用通过离心铸造法制造的第一种稀土淬火合金（平均枝晶宽度约20 m）的实施例3是通过带钢铸造法制造的第一种稀土淬火合金（ 使用约4nm的平均枝晶宽度，其磁性能比实施例1和2的磁性能差。 由此可知，优选使用带钢铸造法制造淬火合金。\n\n   [0072]8\n\n 接下来，将描述用于检查平均枝晶宽度的优选范围的实验结果。\n\n   [0073]分别使用与上述实施例具有相同组成的第一稀土合金和第二稀土合金，并且通过改变带钢铸造方法的条件，使用具有不同枝晶宽度的第一稀土淬火合金和第二稀土合金。 制备了稀土淬火合金。 表2显示了每个样品的平均枝晶宽度。 在制造第一稀土淬火合金和第二稀土淬火合金之后，以与实施例2相同的方式制造烧结磁体。 但是，将烧结温度分别设定为表3所示的温度。 评价所获得的烧结磁体的磁性能。 结果示于表3。\n\n   [0074][表2]\n\n   [0076][表3]\n\n   [0077]样品1样品2样品样品4\n\n   [0078]溴\n\n   [0079]1.38 1.38 1.37 1.38\n\n   [0080]（T）\n\n   [0081]1215. 5 1215. 3 1154.0\n\n   [0082]最高BH\n\n   [0083]366366362366（）\n\n   [0084]（千焦/米3）\n\n   [0085]装箱密度\n\n   [0086]2.2 2.2 2.2 2.2\n\n   [0087]（克/厘米3） \n\n [0088]烧结温度\n\n   [0089]1040 1040 1040 1050\n\n   [0090]O\n\n 如表3所示，第一稀土淬火合金的平均枝晶宽度为8×m的样品4的矫顽力H c J比其他样品低。 因此，从矫顽力的观点出发，第一稀土淬火合金的平均枝晶宽度优选为6im以下。 注意，第一稀土淬火合金的平均枝晶宽度越大，剩余磁通密度B r和矫顽力H e J倾向于越大。\n\n   [0091]此外，如果第二稀土淬火合金的平均枝晶宽度在1.5m以上且2.5 / xm以下的范围内，则磁特性没有实质性的差异。 当然，当第一稀土合金粉末的平均枝晶宽度小于3×m并且第二稀土合金粉末的平均枝晶宽度超过2.5zm时，获得两种类型的稀土合金粉末。 无法获得改善通过混合获得的填充性能的效果。 作为各种实验的结果，难以获得平均枝晶宽度小于1.5 / m的稀土淬火合金，并且平均枝晶宽度1.5m为最小值。\n\n   [0092]接下来，将使用与实施例2相同的第一稀土合金粉末和第二稀土合金粉末，描述检查混合比（体积比）的最佳范围的实验结果的例子。 表4示出了第一稀土合金粉末和第二稀土合金粉末的体积比以及通过电容获得的堆积密度（堆积密度）。\n\n   [0093][表4]\n\n   [0094]样品5样品6样品7样品8样品9样品10体积比\n\n   [0095]95：5 70:30 60：40 50:50 30:70包装密度\n\n   [0096]2.1 2.2 2.2 2.1 1.9 1.8 g / cmu）\n\n 从表4的结果可以看出，第一稀土淬火合金粉末和第二稀土合金粉末的体积比优选在95：5至60:40的范围内，特别是 80：20至70：30是优选的。 通过这样的混合比例来提高填充率的理由并不总是很明确，但认为该体积比适合于用第二稀土合金粉末填充由第一稀土合金粉末形成的间隙。  .. 工业可用性\n\n   [0097] 根据本发明，提供了一种制备稀土淬火合金粉末的方法，该粉末基本上不包含激冷晶体并且其填充性比以往任何时候都优异。 提供一种制造方法。');
INSERT INTO `os_patent_instruction_text` VALUES (13023, 22852, NULL, NULL);
INSERT INTO `os_patent_instruction_text` VALUES (13024, 22853, '【技術分野】\n\n本発明は、希土類合金の造粒粉の製造方法、希土類合金の造粒粉の製造装置および希土類合金焼結体の製造方法に関する。\n\n【背景技術】\n\n希土類合金の焼結磁石(永久磁石)は、一般に、希土類合金の粉末をプレス成形し、得られた粉末の成形体を焼結し、時効処理することによって製造される。現在、希土類·コバルト系磁石と、希土類·鉄·ボロン系磁石の二種類が各分野で広く用いられている。なかでも、希土類·鉄·ボロン系磁石(以下、「R-Fe-B系磁石」と称する。RはYを含む希土類元素、Feは鉄、Bはボロンである。)は、種々の磁石の中で最も高い最大磁気エネルギー積を示し、価格も比較的安いため、各種電子機器へ積極的に採用されている。\n\nR-Fe-B系焼結磁石は、主にR2Fe14Bの正方晶化合物からなる主相、Nd等からなるRリッチ相、およびBリッチ相から構成されている。なお、Feの一部がCoやNiなどの遷移金属と置換されてもよく、ボロン(B)の一部が炭素(C)で置換されてもよい。本発明が好適に適用されるR-Fe-B系焼結磁石は、例えば、米国特許第4,770,723号明細書および米国特許第4,792,368号明細書に記載されている。米国特許第4,770,723号および米国特許第4,792,368号の全ての内容を参考のために本明細書に援用する。\n\nこのような磁石となるR-Fe-B系合金を作製するために、従来は、インゴット鋳造法が用いられてきた。一般的なインゴット鋳造法によると、出発原料である希土類金属、電解鉄およびフェロボロン合金を高周波溶解し、得られた溶湯を鋳型内で比較的ゆっくり\n\nと冷却することによって合金インゴットが作製される。\n\n近年、合金の溶湯を単ロール、双ロール、回転ディスク、または回転円筒鋳型の内面などと接触させることによって、比較的速く冷却し、合金溶湯から、インゴットよりも薄い凝固合金(「合金フレーク」と称することにする。)を作製するストリップキャスト法や遠心鋳造法に代表される急冷法が注目されている。このような急冷法によって作製された合金片の厚さは、一般に、約0.03mm以上約10mm以下の範囲にある。急冷法によると、合金溶湯は冷却ロールに接触した面(ロール接触面)から凝固し始め、ロール接触面から厚さ方向に結晶が柱状に成長してゆく。その結果、ストリップキャスト法などによって作製された急冷合金は、短軸方向のサイズが約0.1μm以上約100μm以下で、長軸方向のサイズが約5μm以上約500μm以下のR2Fe14B結晶相と、R2Fe14B結晶相の粒界に分散して存在するRリッチ相とを含有する組織を持つにいたる。Rリッチ相は希土類元素Rの濃度が比較的高い非磁性相であり、その厚さ(粒界の幅に相当する)は約10μm以下になる。\n\n急冷合金は、従来のインゴット鋳造法(金型鋳造法)によって作製された合金(インゴット合金)に比較して相対的に短い時間(冷却速度:102℃/秒以上、104℃/秒以下)で冷却されているため、組織が微細化され、結晶粒径が小さいという特徴を有している。また、粒界の面積が広く、Rリッチ相は粒界内に広く広がっているため、Rリッチ相の分散性にも優れるという利点がある。これらの特徴が故に、急冷合金を用いることによって、優れた磁気特性を有する磁石を製造することができる。\n\nまた、Ca還元法(あるいは還元拡散法)と呼ばれる方法も知られている。この方法は以下の工程を含む。まず、希土類酸化物のうちの少なくとも1種と、鉄粉および純ボロン粉と、フェロボロン粉およびホウ素酸化物のうちの少なくとも1種とを所定の割合で含む混合粉、あるいは上記構成元素の合金粉または混合酸化物を所定の割合で含む混合粉に、金属カルシウム(Ca)および塩化カルシウム(CaCl)を混合し、不活性ガス雰囲気下で還元拡散処理を施す。得られた反応生成物をスラリー化し、これを水処理することによって、R-Fe-B系合金の固体が得られる。\n\nなお、本明細書において、固体合金の塊を「合金塊」と呼び、従来のインゴット鋳造法によって得られる合金インゴットおよびストリップキャスト法などの急冷法によって得られる合金フレークなどの溶湯を冷却して得られた凝固合金だけでなく、Ca還元法によって得られる固体合金など、種々の形態の固体合金を含むものとする。\n\nプレス成形に供される合金粉末は、これらの合金塊を、例えば水素吸蔵法および/または種々の機械的粉砕法(例えば、ディスクミルが用いられる)で粉砕し、得られた粗粉末(例えば、平均粒径10μm〜500μm)を例えばジェットミルを用いた乾式粉砕法で微粉砕することによって得られる。\n\nプレス成形に供せられるR-Fe-B系合金粉末の平均粒径は、磁気特性の観点から、1.5μm〜6μmの範囲内にあることが好ましい。なお、粉末の「平均粒径」は、特にことわらない限り、ここでは、FSSS粒径を指すことにする。しかしながら、このように平均粒径が小さな粉末を用いると流動性やプレス成形性(キャビティ充填性および圧縮性を含む)が悪く、生産性が悪い。\n\nこの問題を解決する方法として、合金粉末粒子の表面を潤滑剤で覆うことが検討されている。例えば、特開平08-111308号公報および米国特許5、666、635号明細書には、平均粒径10μm〜500μmのR-Fe-B系合金の粗粉末に、少なくとも1種の脂肪酸エステルを液状化した潤滑剤を、0.02質量%〜5.0質量%添加混合後、不活性ガスを用いたジェットミル粉砕を行い、R-Fe-B系合金の微粉末(例えば平均粒径1.5μm〜5μm)を作製する技術が開示されている。\n\n潤滑剤は、粉末の流動性や成形性(圧縮性)を改善するとともに、成形体に固さ(強度)を付与するためのバインダとして機能する一方、焼結体中に残存炭素として残留し磁気特性を低下させる原因となるので、優れた脱バインダ性が要求される。例えば、特開2000-306753号公報には、脱バインダ性に優れた潤滑剤として、解重合ポリマ、解重合ポリマと炭化水素系溶剤の混合物、および解重合ポリマと低粘度鉱油と炭化水素系溶\n\n剤との混合物が開示されている。\n\nしかしながら、上述した潤滑剤を用いる方法によると、ある程度の改善効果は得られるものの、キャビティ内に均一に充填することは難しく、また充分な成形性が得られない。特に、ストリップキャスト法等の急冷法(冷却速度が102/秒〜104/秒)で作製された粉末は、インゴット法によって作製された粉末に比べて、平均粒径が小さいだけでなく粒度分布がシャープ(急峻)なので、特に流動性が悪い。そのため、キャビティに充填される粉末の量が許容範囲を超えてばらついたり、キャビティ内の充填密度が不均一になったりする。その結果、成形体の質量や寸法が許容範囲を超えてばらついたり、成形体に欠けや割れが生じることがある。\n\nR-Fe-B系合金粉末の流動性および成形性を改善するための他の方法として、造粒粉を用いる試みがなされている。\n\n例えば、特開昭63-237402号公報には、室温で液体状態のパラフィン混合物と脂肪族カルボン酸との混合物を粉末に対して0.4〜4.0質量%添加し、混練後、造粒することによって得られた造粒粉を用いることによって、成形性を改善できることが開示されている。また、造粒剤としてPVA(ポリビニルアルコール)を用いる方法も知られている。なお、造粒剤も潤滑剤と同様に成形体に強度を付与するバインダとして機能する。\n\nしかしながら、上記特開昭63-237402号公報に開示されている造粒剤を用いると、脱バインダ性が悪いため、R-Fe-B系焼結磁石の場合、焼結体中に残留する炭素によって磁気特性が低下するという問題がある。\n\nまた、PVAを用いてスプレードライヤ法で製造された造粒粉は、逆に、結合力が強いので、得られた造粒粉が固すぎ、外部磁界を印加しても造粒粉が完全に崩壊しない。従って、1次粒子を充分に磁界配向させることができず、その結果、優れた磁気特性を有する磁石が得られないという問題がある。PVAも脱バインダ性が悪く、PVAに由来する炭素が磁石に残存しやすい。この問題を解決するために水素雰囲気下で脱バインダ処理を行う方法もあるが、充分に炭素を除去することは難しい。\n\nまた、本願出願人は、造粒粉が配向磁界によって崩壊し難いという問題を解決するために、静磁界を印加した状態で造粒することによって、磁界配向した個々の粒子(1次粒子)が造粒剤で結合された造粒粉を製造する方法を提案した(特開平10-140202号公報参照)。この造粒粉を用いると、磁界配向していない1次粒子を造粒剤で結合した造粒粉を用いた場合よりも、磁気特性は改善されるものの、プレス成形時に十分に磁界配向させることが困難なため、造粒していない希土類合金粉末を用いた場合よりも磁気特性が低い。\n\n上述したように、これまで種々の造粒剤や造粒方法が検討されてきたが、流動性やプレス成形性に優れ、且つ、優れた磁気特性を有する磁石を製造することが可能な希土類合金の造粒粉を工業的に生産できる方法は、まだ開発されていない。\n\n一方で、磁石の小型化·薄型化および高性能化へのニーズが高まっており、小型または薄型の高性能な磁石を高い生産効率で製造できる製造方法の開発が望まれている。一般に、希土類合金焼結体(またはこれを着磁した磁石)を機械加工すると加工ひずみの影響で磁気特性が低下するが、小型の磁石においてはこの磁気特性の低下を無視できない。従って、小型の磁石ほど、実質的に機械加工を必要としない程度の寸法精度で、使用される最終形状を有する焼結体を作製することが強く望まれる。このような背景からも、流動性やプレス成形性に優れた希土類合金粉末、特に、R-Fe-B系合金粉末に対する需要が一層強くなっている。\n\n【発明の開示】\n\n本発明は、上記の諸点に鑑みてなされたものであり、流動性やプレス成形性に優れ、且つ、優れた磁気特性を有する磁石を製造することが可能な希土類合金の造粒粉の製造方法、および高品質の希土類合金焼結体を高い生産効率で製造する方法を提供することを主な目的とする。\n\n本発明の希土類合金の造粒粉の製造方法は、(a)残留磁化を有する希土類合金の粉末\n\nを用意する工程と、(b)側面と前記側面に向かって低くなるように傾斜した底面とによって規定されるトラックに前記粉末を供給する工程と、(c)前記トラックを振動させることによって前記粉末に運動エネルギーを与え、前記粉末を前記トラックの長さ方向に移送しながら、前記粉末の残留磁化による凝集力と、前記運動エネルギーによる転動作用とを利用して、実質的にゼロ磁界下で造粒する工程とを包含することを特徴とし、そのことによって上記目的が達成される。\n\nある実施形態において、前記工程(c)は、前記粉末を前記トラック内で前記長さ方向に移送しながら、前記側面側にある粉末を前記底面の前記傾斜に逆らって移動させる工程をさらに包含する。\n\nある実施形態において、前記側面はスパイラル状に配置されており、前記トラックの外周側に設けられている。\n\nある実施形態において、工程(b)は、前記粉末を整粒した後に実行される。\n\nある実施形態において、前記希土類合金は、R-Fe-B系合金である。\n\nある実施形態において、前記粉末の平均粒径が1.5μm以上6μm以下の範囲内にある。\n\nある実施形態において、平均粒径が0.05mm以上3.0mm以下の範囲内にある造粒粉が製造される。\n\n本発明の希土類合金焼結体の製造方法は、上記のいずれかに記載の希土類合金の造粒粉の製造方法を用いて造粒粉を製造する工程と、前記造粒粉に脱磁磁界を印加することなく、前記造粒粉を含む希土類合金の粉末をキャビティに充填する工程と、前記造粒粉を含む希土類合金の粉末に配向磁界を印加した状態でプレス成形することによって成形体を形成する工程と、前記成形体を焼結する工程とを包含することを特徴とする。\n\n本発明の造粒粉の製造装置は、側面と前記側面に向かって低くなるように傾斜した底面とによって規定されるトラックと、前記トラックを規定する前記側面から前記トラックの中央方向に延び、移送方向に傾斜したガイド面と、前記トラックに振動を与える加振装置とを備えることを特徴とする。\n\nある実施形態において、残留磁化を有する希土類合金の粉末を受容するボールを有し、前記トラックは前記ボールの内周面にスパイラル状に設けられている。\n\nある実施形態において、希土類合金の原料粉末を収容する容器と、前記容器内の原料粉末に磁界を印加する磁気回路とを備える磁化装置を更に有する。\n\nある実施形態において、前記磁化装置と前記ボールとの間に整粒機を更に有する。\n\n【図面の簡単な説明】\n\n図1(a)は、本発明の実施形態による造粒粉の構造を模式的に示す図であり、図1(b)および図1(c)は比較のための従来の造粒粉の構造を模式的に示す図である。\n\n図2(a)および(b)は、本発明による実施形態の造粒工程を説明するための図であり、図2(a)はトラック22を上から見た平面図であり、図2(b)は図2(a)のB-B’線に沿った断面図である。\n\n図3は、本発明による実施形態の造粒装置120を模式的に示す図である。\n\n図4は、図3に示した造粒装置120のボール120Aを上から見た構成を模式的に示す図である。\n\n図5は、図3に示した造粒装置120のボール120Aの一部切り欠き斜視図である。\n\n図6は、本発明による実施形態の造粒装置100を模式的に示す図である。\n\n【発明を実施するための最良の形態】\n\n以下、図面を参照しながら、本発明による実施形態の造粒粉の製造方法ならびに希土類合金焼結体の製造方法を説明する。以下の実施形態の説明においては、磁気特性に優れる反面、特に流動性の低い、ストリップキャスト法で作製されたR-Fe-B系合金粉末を用いた焼結磁石の製造方法を例に本発明の特徴を説明するが、本発明はこれに限られず、他の方法によって製造された希土類合金粉末を用いてもよい。\n\n本発明による実施形態のR-Fe-B系合金焼結体の製造方法は、R-Fe-B系合金の粉末(以下、「原料粉末」または「1次粒子粉末」という。)を作製する工程と、原料\n\n粉末に残留磁化を付与する工程と、原料粉末の残留磁化による凝集力を利用して造粒する工程と、造粒粉を含むR-Fe-B系合金粉末に磁界を印加した状態でプレス成形することによって成形体を形成する工程と、成形体を焼結する工程とを包含する。得られた焼結体を公知の方法で着磁することによって、R-Fe-B系焼結磁石が得られる。なお、着磁工程は、焼結後の任意の時点で実行され、例えば、焼結磁石のユーザによって使用の直前に実行されてもよい。ここでは、未着磁のものも焼結磁石と呼ぶ。\n\n本発明による実施形態のR-Fe-B系合金焼結体の製造方法においては、原料粉末の残留磁化による凝集力を用いて造粒する。従って、造粒剤の添加量を低減したり、あるいは、従来よりも結合力が低い結合剤を用いることができる。さらには、造粒剤の添加を省略することすら可能になる。\n\n図1(a)、(b)および(c)を参照しながら、本発明の実施形態による造粒粉の製造方法および得られた造粒粉の特徴を説明する。図1の左側は造粒粉の構造を模式的に示す図であり、図1の右側はプレス成形のためのキャビティ内で配向磁界を印加された後の造粒粉の状態を模式的に示す図である。図1(a)は本発明の実施形態による造粒粉12a、(b)は造粒剤を用いた従来の造粒粉12b、(c)は上述の特開平10-140202号公報に記載された方法によって得られた造粒粉12cをそれぞれ示している。\n\n図1(a)に示すように、本実施形態の造粒粉12aは、残留磁化を有する1次粒子10aが磁気的な凝集力によって弱く結合している。ここでは造粒剤を用いない場合を例示している。残留磁化を有する1次粒子10aは磁気的な閉回路を形成するように磁気的に結合し、造粒粉12aの残留磁化は僅か(例えば0mT超10mT(ミリテスラ)以下程度)である。造粒粉12a中の1次粒子10aの残留磁化の方向は、図1(c)に示す造粒粉12cとは異なり、ランダムに向いている。例えば、1次粒子10aの平均粒径は、1.5μm以上6.0μm以下であり、造粒粉12aの平均粒径は0.05mmから3.0mm程度である。残留磁化は、ガウスメータのプローブを造粒粉中に挿入して測定することができる。\n\nこの造粒粉12aは適度な粒径および形状を有するので、流動性に優れ、且つ残留磁化も低いので、ブリッジングを起こすことなくキャビティに容易に均一に充填される。さらに、1次粒子10aは磁気的な凝集力によって結合しているだけなので、図1(a)に図示するように、配向磁界(例えば0.1T〜0.8T)の印加によって確実に1次粒子10aに崩壊し、1次粒子10aは磁界配向する。また、造粒剤を含まないので、焼結体の炭素含有量を増加させることもない。この造粒粉12aを用いて製造された焼結体を着磁することによって得られる磁石は、原料粉末(残留磁化は実質的にゼロ)を造粒せずに用いて得られる磁石と実質的に同じ磁気特性を有する。すなわち、本発明の実施形態の造粒粉を用いることによって、磁気特性を低下させること無く、流動性および成形性を改善することができる。勿論、成形体の強度を向上するためなどの目的で、造粒剤を添加しても良い。造粒剤は補助的に用いられるので強い結合力は不要であり、磁気特性を低下させないように、その量や種類を選択すればよい。\n\nこれに対し、図1(b)に示したように、原料粉末の1次粒子10bを造粒剤14によって結合した造粒粉12bは、配向磁界では十分に崩壊せず、その結果、得られる焼結磁石の磁気特性が低下する。原料粉末を造粒せずに用いた場合に比べて、例えば、残留磁化は1%〜10%程度低下する。なお、図1(b)の造粒粉12b中の1次粒子10bは、残留磁化を有していないので、矢印を記載していない。\n\nまた、図1(c)に示したように、静磁界中で1次粒子10cを配向させながら、造粒剤14で1次粒子10cを結合、固定した造粒粉12cを用いると、磁気特性の低下は抑制されるものの、造粒粉12cが完全に1次粒子10cまで崩壊しないので、原料粉末を造粒せずに用いた場合に比べて、例えば、残留磁化は1%〜数%程度低下する。また、図1(c)に模式的に示したように、造粒粉12cは磁極の方向に沿った細長い形状になり、流動性の観点から不利である。さらに、造粒粉12cは比較的大きな残留磁化を有しているので、一旦、脱磁(消磁)しないと、ブリッジングを起こすのでキャビティに充填できない。\n\nこれに対し、本発明の実施形態による造粒粉12aは、球形に近く、且つ、残留磁化も小さいので脱磁を必要とせず、キャビティに容易に均一に充填することができる。従って、予め所定の質量の造粒粉を計量してからキャビティに充填する、いわゆる計量充填法を採用することができる。上述したように、本発明の実施形態の造粒粉12aは、流動性およびキャビティへの充填性に優れ、且つ、実質的に磁気特性の低下がない焼結磁石を製造することができる。\n\n本発明の実施形態の造粒粉は、残留磁化を有する原料粉末の粒子に運動エネルギーを与え、粒子が与えられた運動エネルギーによる転動作用によって成長する過程を含む造粒方法によって得られる。また、必要に応じて、造粒剤を添加しても良い。\n\n本発明の実施形態による造粒粉の製造方法において、原料粉末に残留磁化を付与する工程は、造粒粉の製造装置の底面に原料粉末を投入する前の任意の時点で行えば良い。但し、本実施形態による造粒粉12aの1次粒子10aは、残留磁化による磁気的な凝集力で結合しているので、外部から磁界を印加すると造粒粉12aは崩壊する。従って、粒子の成長過程は実質的にゼロ磁界下で行われるようにする。これは、図1(c)に示した造粒粉12cの製造方法では、造粒粉12が最終的に造粒剤14によって固定されるまで、1次粒子10cを配向させるために磁界を印加し続ける必要があるのと対照的である。なお、本明細書における「実質的なゼロ磁界」とは、粒子が転動作用によって成長する過程で、粉末の残留磁化によって磁気的な閉回路が形成された造粒粉が得られる程度および粉末の残留磁化に影響を及ぼさない程度の弱い磁界をいう。\n\n残留磁化を付与するために印加する磁界は種々の磁界を用いることができる。なお、1次粒子が有する残留磁化はわずかでよいので、交番減衰磁界を用いることが好ましい。なお、残留磁化を付与するための磁界は、交番減衰磁界に限られず、単調減衰磁界や他のパルス磁界や静磁界を用いてもよい。\n\nなお、残留磁化を付与しても原料粉末の保磁力が小さいと、最終的な造粒粉が得られるまでの間に消磁してしまい、造粒粉の形状を維持できないことがある。従って、原料粉末の保磁力が比較的高いものが好ましい。具体的には、原料粉末を嵩密度が2.0g/cm3となるように容器に充填し、BHトレーサで測定した保磁力の値を原料粉末の見掛け上の保磁力とすると、原料粉末は、60kA/m以上の保磁力を有することが好ましく、70kA/m以上の保磁力を有することがさらに好ましい。例えば、R-Fe-B系合金の場合には、Dyを1.2質量%以上、またはTbを1質量%以上、またはDyとTbとの合計を1質量%以上含む合金が好ましい。\n\nプレス成形に供せられるR-Fe-B系合金の粉末としては、上述のようにして製造された造粒粉のみを用いることが流動性や成形性の観点からは好ましいが、造粒粉と原料粉末(1次粒子粉末)とを混合して用いることもできる。但し、原料粉末の割合が増えると流動性が低下するので、造粒による流動性の改善効果を十分に得るためには、実質的に造粒粉のみを用いることが好ましい。また、造粒粉に混合して原料粉末を用いる場合には、粒子表面が潤滑剤で被覆されていることが好ましい。1次粒子の表面を潤滑剤で被覆することによって、R-Fe-B系粉末の流動性を改善することができるとともに、R-Fe-B系合金の酸化を防止することができる。また、磁界プレス工程における配向性も改善される。なお、本願明細書においては、実質的に希土類合金のみの粉末(表面の酸化物層は含み得る)だけでなく、希土類合金の粉末とともに造粒剤や潤滑剤を含むプレス成形に供せられる粉末も希土類合金の粉末と呼ぶことにする。\n\n本発明による実施形態のR-Fe-B系合金焼結体を用いた磁石の製造方法を工程順に説明する。\n\nまず、ストリップキャスト法を用いて、R-Fe-B系合金フレークを作製する(例えば、米国特許第5,383,978号参照)。具体的には、公知の方法によって製造された、R-Fe-B系合金を高周波溶解により溶湯とする。なお、R-Fe-B系合金としては、上記の他に、例えば米国特許第4,770,723号および米国特許第4,792,368号の明細書に記載されている組成のものを好適に用いることができる。R-Fe-B系希土類合金の典型的な組成では、RとしてNdまたはPrが主に用いられ、Feは\n\n部分的に遷移元素(例えばCo)に部分的に置換されてもよく、BはCによって置換されてもよい。\n\nこの合金の溶湯を1350℃に保持した後、ロール周速度を約1m/秒、冷却速度500℃/秒、過冷度200℃の条件で単ロール上で急冷し、厚さ0.3mmの合金フレークを得る。この合金フレークに水素を吸蔵させ、脆化させることによって合金粗粉末を得る。この合金粗粉末をジェットミル装置を用いて窒素ガス雰囲気中で微粉砕することによって、例えば平均粒径が1.5μm〜6μmで、BET法による比表面積が約0.45m2/g〜約0.55m2/gの合金粉末(原料粉末)が得られる。この原料粉末の真密度は、7.5g/cm3である。\n\n次に、得られた原料粉末に残留磁化を付与する。ここでは、磁化装置を用いてピーク磁界が1.0Tの交番減衰磁界を印加する。\n\n次に、残留磁化を有する原料粉末を造粒する。本出願人は、特願2001-362436号および特願2002-298621号において、残留磁化を有する原料粉末を流動層造粒法を用いて造粒する方法を記載したが、本発明の実施形態では、振動造粒法を用い、先の出願に記載した方法よりも簡便に造粒粉を製造することができる。\n\n本発明の実施形態による造粒粉の製造方法は、(a)残留磁化を有する希土類合金の粉末を用意する工程と、(b)側面と側面に向かって低くなるように傾斜した底面とによって規定されるトラックに粉末を供給する工程と、(c)トラックを振動させることによって粉末に運動エネルギーを与え、粉末をトラックの長さ方向に移送しながら、粉末の残留磁化による凝集力と、運動エネルギーによる転動作用とを利用して、実質的にゼロ磁界下で造粒する工程とを包含する。工程(c)は、粉末をトラック内で長さ方向に移送しながら、側面側にある粉末を底面の傾斜に逆らって移動させる工程をさらに包含することが好ましい。\n\nこの造粒工程を図2(a)および(b)を参照しながら説明する。図2(a)はトラック22を上から見た平面図であり、図2(b)は図2(a)のB-B’線に沿った断面図である。\n\n残留磁化を有する原料粉末は、図2(a)中、左から右に、トラック22を移送されながら造粒される。トラック22は、図2(b)に示すように、側面22aと側面22aに向かって低くなるように傾斜した底面22bとによって規定される。ここでは、後に詳述するように、トラック22がボールの内周面にスパイラル状に配置された構成を例示しており、トラック22の一方(スパイラルの外側)に側面22aが設けられ、底面22bは1方向に傾斜しているが、例えば、直線状に延びるトラックを用いる場合、その断面構造は、図2(b)に示した構造を左側にも有し、移送方向(トラックの延設方向)に対して対称な構成としてもよい。トラック22をスパイラル状に構成すると、比較的狭い面積に相対的に長いトラック22を配置できる利点がある。\n\nトラック22は、図2(b)中の矢印で示すように水平方向および垂直方向に振動され、この振動によって粉末に与えられた運動エネルギーによる転動作用と、粉末の残留磁化による凝集力とによって、造粒が行われる。転動作用は主に水平振動によって得られる。一方、垂直振動によって粉末が圧密化される作用も得られるので、水平振動と垂直振動との両方を与えることが好ましい。また、水平振動の振幅は移送速度にも影響し、水平振動の振幅を大きくすることによって、移送速度を上昇することができる。\n\n水平振動および垂直振動の振幅および周波数は、造粒効率および移送速度を考慮して、トラック長とともに適宜設定される。造粒効率の観点からは、垂直振動の振幅は0.2mm以上であることが好ましく、0.3mm以上であることがさらに好ましい。水平振動の振幅は、移送速度の観点から0.5mm以上であることが好ましく、1.0mm以上であることがさらに好ましい。ただし、2.0mmを超えると十分な造粒効果が得られず、流動性の向上効果が低下することがある。水平振動および垂直振動の周波数は、例えば、70Hz以上80Hz以下であるが、特に限定されない。水平振動と垂直振動との位相関係は適宜設定され、楕円振動となるように設定してもよい。\n\nトラック長は4000mm以上あることが好ましい。但し、トラック長の短い装置を用\n\nいる場合は、複数回造粒工程を実行することによって、実質的にトラック長を長くしたのと同等の効果を得ることができる。トラック長は、造粒粉の粒径と造粒粉の形状に影響する。トラック長が短すぎると、十分に大きな造粒粉が得られない、造粒粉の形状が十分に整わない、および/または十分な大きさの造粒粉の割合が少なくなることがある。\n\n振動しているトラック22上では、比較的小さな造粒粉1aは傾斜した底面22bの高い側に集まり、比較的大きな造粒粉1bは傾斜した底面22bの低い側(側面22aに近い側)に集まる。このように、造粒粉がその大きさによって偏在すると、造粒効率が低下するので、図2(a)に示したように、側面22aからトラック22の中央方向に延び、移送方向に傾斜したガイド面22cを設けることによって、トラック22の側面22a側にある比較的大きな造粒粉1bを底面22bの傾斜に逆らって底面22bの高い側に移動させると、比較的大きな造粒粉1bが比較的小さな造粒粉1aと混合され、効率的に造粒が行われる。ガイド面22cは、移送方向に対して30°以上60°以下(ガイド面22cの法線と移送方向(トラックの長手方向、トラックが湾曲している場合はその接線方向))とのなす角が120°以上150°以下)の角度で傾斜していることが好ましい。ガイド面22cの傾斜角が30°未満であると造粒効果が不十分となり小さな造粒粉の割合が増え、粒度のばらつきが大きくなることがあり、60°を超えると移送効率が低下するので好ましくない。\n\nガイド面22cの間隔は、トラック22の幅、トラック22の長さや移送速度(振動条件)との関係で適宜設定される。隣接するガイド面22cの間隔は、例えば、約80mm以上に設定される。約80mmよりも短いと、造粒効果が低下するので好ましくない。また、約200mmを超えるとガイド面による造粒効果が低下するので好ましくない。\n\n次に、図3から図5を参照しながら、本発明による実施形態の造粒粉の製造装置(造粒装置)120の構成例を説明する。\n\n図3に示すように、造粒装置120は、ボール120Aと加振装置120Bとを有している。加振装置120Bとしては、公知のボール振動型パーツフィーダ(例えば、神鋼電機株式会社製)と実質的に同じものを用いることができるので、加振装置120Bの構成(例えば、特開2001-114412号公報参照)の説明は省略し、ボール120Aの構造を以下に説明する。\n\n図4は、ボール120Aを上から見た構成を模式的に示す図であり、図5はボール120Aの一部切り欠き斜視図である。\n\nボール120Aは、側面122aと側面122aに向かって低くなるように傾斜した底面122bとによって規定されるトラック122が、内周面にスパイラル状に設けられている。また、側面122aからトラック122の中央方向に延び、移送方向に傾斜したガイド面(図2中のガイド面22c)は、凸部122dの側面によって形成されている。なお、凸部122dはガイド面(図2中のガイド面22c)として機能する移送方向に傾斜した面と、逆方向に傾斜した面を有しており、逆方向に傾斜した面が存在することによって、ガイド面の裏側に粉末が滞留することが防止され、移送効率を向上することができる。もちろん、凸部122dに代えて、図2に示したようなガイド面22cを有するじゃま板を用いても良い。\n\n一方、トラック122の内側(底面122bの高い方)からトラック122の中央方向に延び、移送方向に傾斜したじゃま板122cを有している。このじゃま板122cは、凸部122dのガイド面によって底面122bの傾斜に逆らって移動してきた造粒粉を側面122a(底面122bの低い側)に再び戻すように作用する。このじゃま板122cを設けることによって、造粒効果が増大し、造粒粉の排出性が向上する、という効果を得ることができる。じゃま板122cは、スパイラル状に配置されたトラック122の内周側に設けることが好ましく、図4に示した構成では、約3周のトラック122の内の内側の1.5周分にだけじゃま板122cを設けている。\n\nボール120Aは全体としてすり鉢状の形状を有しており、中央部の底面124に希土類合金の粉末が投入される。底面124の中央部には三角錐状の突起125が設けられており、突起125の周りにはその円形の底面の接線方向に延びる尾根状の小突起126が\n\n形成されており、投入された粉末を内周面に設けられたトラック122に効率良く供給する。なお、造粒効率を向上するためには、ボール120Aに粉末を投入する前に原料粉末を整粒しておくことが好ましい。\n\nボール120Aに投入された粉末は、すり鉢状のボール120Aの底部からスパイラル状のトラック122に沿ってボール120Aの内周面を上って行きながら、図2を参照しながら説明したように造粒され、ボール120Aの上部の取り出し口128に移送される。取出し口128は例えば次の成形工程のためのフィーダ装置(不図示)と接続されている。\n\nこのとき、残留磁化を有する粉末とトラック122の表面(側面122aおよび底面122b)、ならびにじゃま板122cおよび凸部122dの表面との接触抵抗(摩擦抵抗)が強いと、粉末が表面に付着し、造粒効率が低下することがある。従って、粉末が接触する表面は滑らかであることが好ましく、例えば、鏡面仕上げのSUS等のステンレス鋼を用いてボール120Aを作製し、さらにその表面をウレタンコーティングすることが好ましい。また、粉末に造粒剤を添加すると、粉末がボール120Aの表面に付着しやすいので、造粒剤はむしろ用いない方が好ましい場合が多い。なお、残留磁化を有しない粉末の場合、造粒剤を添加しても、この方法で造粒粉を得ることは困難であった。\n\nここで用いた実施形態の造粒装置120の具体的な仕様の一例を以下に示す。\n\n垂直振動:振幅  0.3mm\n\n水平振動:振幅  1.5mm\n\nボール底部124:直径  350mm、\n\n水平からの傾斜角:底面  8°\n\nトラック  10°\n\n突起125:底面の直径  100mm、高さ  50mm\n\nトラック122:幅  35mm、側面の高さ  30mm、\n\n全長  4000mm\n\n最外周トラックの直径:  560mm\n\nじゃま板122c:側面の移送方向に対する角度  45°\n\n側面の長さ  22mm\n\n凸部122d:側面の移送方向に対する角度  45°\n\n側面の長さ  30mm\n\nなお、本発明の造粒方法を用いると、粉末の周囲のガスの圧力を制御する必要が無いので、大気圧下で実行することができるが、希土類合金の粉末は酸化されやすいので、造粒工程は、不活性ガス(窒素または希ガス)雰囲気下で行うことが好ましい。例えば、造粒装置120の全体をカバーで覆い、カバー内を窒素ガスで充満させればよい。カバーは密閉構造にする必要はなく、例えば、窒素ガスを流気させておいてもよい。\n\n上記の希土類合金の粉末(平均粒径1.5μm以上6μm以下)から作製される造粒粉の平均粒径は0.05mm〜3.0mmの範囲内であることが好ましい。一般に、造粒粉に含まれる1次粒子はわずかであり、また3次粒子以上の高次の造粒粉も非常に少ないので、実質的に2次粒子の平均粒径が造粒粉の平均粒径を代表するものとして扱うことができる。ここでは、造粒粉の平均粒径として、顕微鏡観察によって求めた2次粒子の平均粒径を用いる。造粒粉の平均粒径が0.05mmより小さいと、流動性の改善効果が低く、十分な密度で均一な成形体を得ることが難しい。一方、造粒粉の平均粒径が3mmより大きいと、キャビティへの充填性が低下し、十分な密度で均一な成形体を得ることが難しい。造粒粉の平均粒径は、0.1mm〜1.5mmの範囲内にあることがさらに好ましい。ここで例示した造粒装置120を用いると、平均粒径が0.1mm〜1.5mmの範囲内に造粒粉を効率良く作製できる。\n\n次に、得られた造粒粉をプレス成形する工程に移るが、ここで、造粒装置120の他の利点について説明する。従来の流動層造粒装置などと異なり、造粒装置120は、焼結磁石用の希土類合金成形体の製造ラインをコンパクトにできる、および/または、自動化できるという利点を有している。すなわち、図6に模式的に上記の造粒装置120を含む造\n\n粒装置100を構成することができる。\n\n造粒装置100は、上述の造粒装置120と、造粒装置120の前工程を行う装置とが縦に一体に形成されている。すなわち、造粒装置100は、原料粉末を受容するホッパー130と、計量装置(秤量装置)140と、磁化装置150と、整粒機160とが連結パイプで接続されている。\n\n希土類合金の原料粉末は、ホッパー130に投入され、計量装置140で所定の質量の原料粉末を計量し、所定の質量の磁化装置150の容器に供給する。磁化装置150は、磁気回路(不図示)を有しており、例えば、コイルに所定のパルス電流を供給することによって、交番減衰磁界を発生し、容器内の原料粉末に残留磁化を与える。\n\n残留磁化を有する粉末は、整粒機160によって所定の大きさの塊に整粒され、造粒装置120のボール120Aに供給される。整粒機160は、例えば、開口径が0.5mm以上1.5mmのメッシュ(金網)で構成される。整粒機160によって所定の大きさの塊に分割されて供給された粉末は、その塊を核として造粒していくので、得られる造粒粉の粒度範囲が制限され、異常に大きな造粒粉が作製されることを抑制することができる。メッシュの開口径は、目標とする造粒粉の粒径に応じて適宜設定されるが、残留磁化による凝集力を利用しているので、得られる造粒粉の粒径は残留磁化の大きさによって制限され、上記の範囲を外れると、整粒の効果が低下する。特に、開口径が0.5mm未満となると、塊が造粒の核として機能し難いため、造粒効率が低下する。\n\nまた、メッシュは例えば蛇腹状に折り曲げてもよい。折り曲げることによって粉末の選別の処理効率が向上する。さらに粉末の選別の処理効率を向上するために、メッシュに振動機構を連結するなどして、メッシュを振動させてもよい。\n\n造粒装置120の取出し口128(図4参照)から造粒粉が排出される。この造粒粉を例えばフィーダ装置などを用いて、次の成形工程で利用するフィーダボックスに供給すれば、原料粉末の投入以降、プレス成形工程までを自動化することができる。\n\n次に、得られた造粒粉をプレス成形することによって成形体を形成する。ここでは、造粒粉だけを用いて成形体を形成する。プレス成形には公知のプレス成形装置を用いることができ、典型的には、上下パンチで金型のキャビティ(ダイホール)内の粉末をプレスする一軸プレス成形装置が用いられる。\n\n一軸プレス成形機の金型のキャビティに造粒粉を充填する。造粒粉をキャビティに充填する工程は、例えば、ふるいを用いた充填方法や、特公昭59-40560号公報、特開平10-58198号公報、実開昭63-110521号公報や特開2000-248301号公報に開示されているようなフィーダボックスを用いた充填方法(これらを総称して「落とし込み方法」ということもある。)を用いて実行することができる。\n\n特に、小さい成形体を形成する場合、キャビティの内容積に対応する量の造粒粉を、キャビティを用いて計量することが好ましい。例えば、下方に開口部を有するフィーダボックスをキャビティ上に移動させ、造粒粉を重力落下(自然落下)させた後、キャビティに供給された余剰の造粒粉をすりきることによって、比較的均一に、所定量の造粒粉を充填することができる。勿論、別途計量した造粒粉を漏斗などを用いてキャビティに充填しても良い。\n\nキャビティ内に造粒粉を充填した後、一軸プレス装置の上パンチを降下し、キャビティの開口部を塞いだ状態で、配向磁界を印加し、造粒粉を1次粒子に崩壊させるとともに、1次粒子を磁界配向させる。本発明の実施形態による造粒粉は、0.1T〜0.8Tの比較的弱い磁界で確実に1次粒子に崩壊する。但し、充分な配向度を考慮すると、0.5T〜1.5T程度が望ましい。磁界の方向は、例えばプレス方向と垂直方向である。このように磁界を印加しながら、例えば98MPaの圧力で、上下パンチで粉末を一軸プレスする。その結果、相対密度(成形体密度/真密度)が0.5〜0.6の成形体が得られる。なお、磁界の方向は、必要に応じてプレス方向に対して平行としてもよい。本発明によって得られる造粒粉は、充填工程で壊れることがなく、且つ、配向磁界の印加によって1次粒子に崩壊する適度な強度を有している。\n\n次に、得られた成形体を、真空中または不活性ガス雰囲気中で、例えば約1000℃〜\n\n約1180℃の温度で、約1時間から6時間焼結する。本実施形態の造粒粉は、造粒剤を含まない、あるいは、焼結工程に実質的に除去され得る程度の造粒剤しか含まないので、脱バインダ工程を別途設ける必要がない。なお、従来の典型的な脱バインダ工程は、約200℃〜800℃の温度で、約2Paの圧力の不活性ガス雰囲気下で、約3時間〜約6時間実行されている。\n\n得られた焼結体を、例えば約450℃〜約800℃の温度で、約1時間〜8時間時効処理することによって、R-Fe-B系焼結磁石が得られる。この後、任意の段階で、着磁することによってR-Fe-B系焼結磁石が最終的に完成する。\n\n本発明によると、上述したように流動性および成形性に優れた造粒粉を用いるので、充填量のばらつきが少なく、且つキャビティ内に均一に充填される。従って、プレス成形によって得られた成形体の質量および寸法のばらつきが少ない。また、成形体に欠けや割れが発生することも少ない。\n\nさらに、本実施形態の造粒粉の1次粒子は、実質的に残留磁化の磁気的な凝集力によって結合しているので、配向磁界の印加によって1次粒子に確実に崩壊する。従って、1次粒子の配向度が低下することがない。また、造粒剤の炭素が焼結体中に残存することによる磁気特性の低下も最小限に抑制されるので、優れた磁気特性を有する焼結磁石を得ることができる。このように、本発明によると、高品質のR-Fe-B系合金焼結磁石を高い生産効率で製造することができる。\n\n【実施例】\n\n以下、本発明の実施例を説明する。\n\nR-Fe-B系合金粉末を以下の様にして作製した。出発原料として、純度99.9%の電解鉄、Bを19.8%含有するフェロボロン合金、純度99.7%以上のNdおよびDyを用いて、合金溶湯を調製した。この合金溶湯からストリップキャスト法で、実施例1(組成:34.0質量%Nd、1.0質量%Dy、1.0質量%B、残部:Fe)および実施例2(組成:30.0質量%Nd、5.0質量%Dy、1.0質量%B、残部:Fe、)のR-Fe-B系合金のフレークを得た。このフレークをジェットミルを使用し、不活性ガス(例えばN2ガス、ガス圧58.8MPa)中で微粉砕し、平均粒径が約3μmの原料粉末を得た。実施例1の粉末の保磁力は60kA/mで、実施例2の粉末の保磁力は120kA/mであった。\n\n次に、上記実施例用の原料粉末に、交番減衰磁界(ピーク磁界1.0T)を印加し、残留磁化を付与した後、上述した造粒装置120を用いて、平均粒径が0.3mmの造粒粉を製造した。造粒剤は添加していない。得られた造粒粉の残留磁化はいずれも0.2mT程度であった。得られた造粒粉の安息角を測定した結果を表1に示す。なお、表1には、比較例1として、実施例1の原料粉末に残留磁化を与えず、造粒剤としてイソパラフィン(2質量%)を用いて転動造粒法によって作製した造粒粉の安息角を示している。また、比較例2は実施例1の原料粉末そのものの安息角を示している。\n\n\n\n\n\n安息角が大きい粉末は流動性が悪く、安息角が小さいものほど流動性が優れている。比較例2として示したように、原料粉末を造粒しないと安息角は約52°と大きく、流動性が低い。これに対し、造粒を行った実施例1および2、比較例1のいずれのプレス粉末も安息角は45°未満まで低下している。特に、実施例1および2の造粒粉は、比較例1のプレス粉末よりも安息角が小さく、流動性が優れている。すなわち、残留磁化を利用することによって、造粒剤を用いることなく、流動性が改善されることがわかる。\n\n表1に示したそれぞれのプレス用粉末を、上述したフィーダボックスを用いた方法で、縦20mm、横15mm、深さ10mmのキャビティ内に充填し、一軸プレス成形(98MPa、配向磁界(1.3T)をプレス方向に直角に印加)を行った。この充填工程およびプレス成形工程は、全ての実施例および比較例について同じ条件で行った。なお、プレス条件を変えて成形体密度(グリーン密度)の異なる成形体を形成した。\n\n得られた成形体をAr雰囲気中で、1060℃にて約4時間焼結したあと、500℃で1時間の時効処理を施し、焼結体を得た。さらに、この焼結体を2387kA/mの条件で着磁することによって、焼結磁石を得た。それぞれの実施例および比較例について、サンプル数は50個とした。得られた焼結磁石の残留磁化Br(T)を表2示す。\n\n\n\n表2からわかるように、実施例1のBrは、比較例2のBrと実質的な差異は認められず、優れた磁気特性を有している。造粒剤を添加した比較例1のBrは、実施例1および比較例2よりもBrの値が低い。これは造粒剤が炭素として焼結磁石中に残存するためである。\n\n上述したように、1次粒子の残留磁化による磁気的な凝集力を利用して造粒粉を作製することによって、造粒剤を用いなくとも造粒剤を用いた従来の造粒粉と同等以上の流動性を得ることができるので、従来と同等以上の生産性で、従来よりも優れた磁気特性を有する焼結磁石を製造することができる。さらに、1次粒子の残留磁化のみを用いて造粒粉を作製すれば、磁気特性の低下を実質的に無くすことができる。\n\n【産業上の利用可能性】\n\n本発明によると、流動性やプレス成形性に優れ、且つ、優れた磁気特性を有する磁石を製造することが可能な希土類合金の造粒粉の製造方法が提供される。この造粒粉を用いることによって、高品質の希土類合金焼結体を高い生産効率で製造する方法が提供される。\n\n本発明によると、磁気特性を低下させることなく、希土類合金粉末の流動性および成形性を改善することができるので、従来は磁気特性を犠牲にしていたプレス成形が困難な形状の焼結磁石の磁気特性を向上することができる。さらに、造粒時間の短縮や、脱バインダ工程の省略が可能となり、希土類焼結磁石の生産性を向上することができる。', '【技术领域】\n\n本发明涉及一种制备稀土合金颗粒粉末的方法,其制造稀土合金的制造装置及制造稀土合金烧结体的方法。\n\n发明背景\n\n稀土合金的烧结磁体(永磁体)通常通过压制稀土合金的粉末和烧结所获得的粉末和老化的模塑体来制造。目前,在每个场中广泛使用两种类型的稀土,基于钴基磁体和稀土和铁 - 硼基磁体。其中,稀土,铁,基于硼基磁铁(下文中称为“R-Fe-B基磁体”。R是含有Y,Fe的稀土元素是铁,B是硼。)是不同的磁铁由于显示了最高最大磁能产品并且价格相对较低,因此可以为各种电子设备进行积极采用。\n\nR-Fe-B基烧结磁铁主要是r2Fe.14它由富含R的富相位组成,该相由B平方化合物,Nd等组成,富含B的相。 Fe的一部分可以被诸如CO或Ni的过渡金属代替,并且硼(B)的一部分可以被碳(C)取代。基于R-Fe-B的烧结磁铁,其中本发明优选地应用,例如,在美国专利No.5,522,517中。美国专利No.4,770,723和美国专利No.美国专利号4,792,368。美国专利No.2,770,723和4,792,368通过引用并入本文。\n\n为了生产R-Fe-B基合金,通常使用铸锭铸件。根据一般的铸锭铸造方法,稀土金属,电解铁和融合物合金是起始材料的高频率,并且所得熔融金属在模具中相对缓慢。\n\n通过冷却产生合金锭。\n\n近年来,通过接触单辊,硼驼,旋转盘或旋转圆柱形模具,以及用锭(“合金薄片”(“合金薄片”的凝固合金(“合金薄片”)相对快速地冷却合金的熔融金属。它将被称为产生)的剥离铸造方法,并且由离心铸造方法表示的淬火方法引起关注。通过这种猝灭产生的合金片的厚度通常在约0.03mm或更大约10mm或更小的范围内。根据淬火方法,合金熔融金属开始与冷却辊接触的表面(辊接触表面)凝结,并且晶体从辊接触​​表面沿厚度方向生长。结果,在短轴方向上由条形铸造方法等产生的突然冷却合金为约0.1μm以上且约100μm或更小,并且长轴方向的尺寸为约5μm或更高小于约500μm或更小。2Fe.14b晶相和r2Fe.14B含有富含R的富相的组织分散在结晶相的晶界中。富含R的相是具有相对高浓度的稀土元素R的非磁性相,其厚度(对应于晶界的宽度)为约10μm或更小。\n\n与通过常规锭铸件产生的合金(铸锭合金)相比,淬火合金是相对较短的(冷却速率:10)(模具铸造)2°C / S或更多,104由于它在℃/秒或更小于)中,因此组织小型化并且具有晶粒尺寸小的特征。另外,由于晶界面积宽,并且R-富级相在晶界中广泛扩散,因此有一个优点是R-富含相的分散性优异。因此,通过这些特征,可以通过使用淬火合金来制造具有优异磁性的磁体。\n\n另外,还已知一种称为CA缩写方法(或还原扩散方法)的方法。该方法包括以下步骤。首先,稀土氧化物中的至少一种,含有至少一种铁粉和纯硼粉末,芳香族粉末和氧化硼的混合粉末,或上述组成元素的合金粉末,或者金属钙(CA)和将氯化钙(CaCl)与混合氧化物或混合氧化物混合,并进行氯化钙(CaCl),并且在惰性气体气氛下进行降低扩散处理。所得反应产物浆化,通过水处理获得R-Fe-B合金的固体。\n\n在本说明书中,固体合金的质量被称为“合金质量”,并且通过合金铸锭获得的合金薄片如通过常规铸锭铸造方法获得的合金薄片,不仅可以冷却凝固合金但是,还含有Ca还原方法获得的固体合金等固体合金。\n\n用于压制成形的合金粉末用这些合金块粉碎,例如储氢和/或各种机械研磨方法(例如,使用圆盘磨机),并且获得的粗粉末(例如,平均粒度为10通过使用喷射磨机用干研磨方法研磨来获得μm至500μm。\n\n从磁性特性的观点来看,用于压制成形的R-Fe-B合金粉末的平均粒径优选为1.5μm至6μm。另外,除非另有说明,否则粉末的“平均粒径”是指本文的FSSS粒度。但是,如果以这种方式,平均粒径小的粉末,流动性和压制成形性(包括腔填充和可压缩性)差,并且生产率差。\n\n作为解决该问题的方法,已经研究了用润滑剂覆盖合金粉末颗粒的表面。例如,在JP-A-08-111308和美国专利No.美国专利No.5,666,635中,至少一种脂肪酸酯在R-Fe-B基合金的末端是平均粒径为10μm至500的液体μm。将0.02质量%的润滑剂混合为5.0质量%后,进行使用惰性气体的喷射磨机,以及R-Fe-B基合金的细粉末(例如,平均颗粒直径为1.5μm至5μm),公开了一种制造技术。\n\n润滑剂改善了粉末的流动性和可成形性(可压缩性),并用作粘合剂,用于将固体(强度)施加到模塑体上,同时剩下烧结体中的剩余碳,并且仍然是剩余的碳。由于特征是造成的,需要优异的可屈服性。例如,日本专利申请公开No.2000-306753是具有优异的可变性,抗聚合聚合物,抗聚合聚合物和烃溶剂的混合物的润滑剂,以及溶液聚合物和低粘度矿物油和烃溶液。\n\n公开了一种与药剂的混合物。\n\n然而,根据使用上述润滑剂的方法,尽管获得了一些改进效果,但难以均匀地填充腔体,并且不能获得足够的可成形性。特别地,淬火方法如带钢铸造方法(冷却速度为102/ s到104在/秒中产生的粉末不仅小于由铸锭方法产生的粉末,而且粒度分布是尖锐的(尖锐),因此流动性特别差。因此,填充在腔中的粉末的量超出允许范围,并且腔内的填充密度是不均匀的。结果,模制体的质量和尺寸可以响起并导致模塑主体中的碎裂或破裂。\n\n尝试使用颗粒面粉作为另一种方法以改善R-Fe-B合金粉末的流动性和可成形性。\n\n例如,在日本专利申请公开No.63-237402中,向粉末中加入0.4至4.0质量%的液态链烷烃和脂族羧酸,并在捏合后,通过砂浆获得。公开了通过使用粒状粉末可以改善可模塑性。另外,还已知使用PVA(聚乙烯醇)作为造粒剂的方法。造粒剂还用作粘合剂,其赋予模塑体的强度以及润滑剂。\n\n然而,如果使用日本专利申请公开No.63-237402中公开的肉芽,则没有必要具有Dataphragon,因此在R-Fe-B基的情况下剩下的烧结体中残留的碳烧结磁体。存在磁特性减少的问题。\n\n另外,由于相反,通过喷雾干燥方法制造的粒状粉末,所得到的粒状粉末是固体,因此得到的粒状粉末硬化,粒状粉末完全完全施加。不要崩解。因此,初级颗粒不能充分定向,结果,存在不能获得具有优异磁特性的磁体的问题。 PVA也很差,并且来自PVA的碳可能留在磁铁中。为了解决这个问题,还存在一种在氢气氛下进行脱抗器加工的方法,但难以充分去除碳。\n\n另外,为了解决粒状粉末难以通过定向磁场崩解的问题,我们提出了一种用磁场对准的单个颗粒(初级颗粒),我们提出了制造粒状粉状面粉的方法(参见JP-A-10-140202)。当使用该粒状粉末时,磁性的对准得到改善,但是在压模时对准磁场对准,尽管磁特性得到了比使用粒状药物未结合的初级颗粒的提高。因为它很难,磁性性质低于使用非粒状稀土合金粉末的情况。\n\n如上所述,到目前为止已经研究了各种造粒和造粒方法,但是一种稀土合金,能够产生具有优异的流动性和压制成形性的磁体和具有工业上生产颗粒粉末的优异磁性方法的磁体。\n\n另一方面,越来越需要小型化,更薄和改善磁体,并开发一种能够产生具有高生产效率的小型或薄高性能磁体的制造方法。通常,由于加工应变的影响,稀土合金烧结体(或磁铁)的机械加工降低,但在小磁体中,在小磁体中不能忽略磁性的降低。因此,强烈希望产生具有最终形状的烧结体,其尺寸精度不需要基本上不作为小磁体的加工。此外,从这种背景下,对稀土合金粉末的需求优异的流动性和压制成形性,特别是对R-Fe-B合金粉末的需求变得越来越强。\n\n发明的描述\n\n鉴于上述几点进行了本发明,以及用于制备优异的流动性和压制成形性的稀土合金的方法,并且可以制造具有优异磁性的磁体本发明的主要目的是提供一种具有高生产效率的高品质稀土合金烧结体的方法。\n\n本发明的稀土合金的制备制造方法是(a)稀土合金的粉末,具有剩余磁化\n\n通过振动轨道将步骤(b)和朝向侧表面和粉末(c)倾斜的步骤和粉末(c)倾斜的步骤提供的方法通过振动旋转,使动能并在纵向转移粉末轨道,并且在基本上零磁场中使用粘合由于粉末的残留磁化和通过动能的滚动作用。其特征在于包括颗粒的步骤,这是实现的,通过该步骤实现了上述目的。\n\n在一个实施例中,步骤(c)还包括将粉末在侧表面上移动到底表面的倾斜的步骤,同时将粉末在轨道内的纵向上转移。。\n\n在一个实施例中,侧表面设置在螺旋中并且设置在轨道的外周侧上。\n\n在一个实施方案中,步骤(b)在共享粉末之后进行。\n\n在一个实施方案中,稀土合金是R-Fe-B基合金。\n\n在一个实施方案中,粉末的平均粒度为1.5μm以上且6μm或更小。\n\n在一个实施方案中,产生0.05mm或更大和3.0mm或更小的平均粒度范围内的粒状粉末。\n\n用于制备本发明的稀土合金烧结体的方法使用使用根据上述任一项的制造粒状粉末的方法生产造粒粉末的方法,以及对谷物粉的去磁磁场。形成通过将稀土合金的粉末压入腔体中的稀土合金中的粉末并在含有晶粒粉的稀土合金粉末施加到含有籽粒面粉的状态下压制成型体。它的特点是包括烧结模具的步骤。\n\n本发明的颗粒状粉末的制造装置在从上述轨道的侧面的轨道的中心方向上延伸,并且从限定轨道的侧表面的轨道的侧面,以及由底部定义的轨道朝向侧表面和侧表面下降的表面。其特征在于,包括沿振动到轨道的方向和振动装置倾斜的引导表面。\n\n在一个实施方案中,提供具有具有残余磁化的稀土合金的粉末的球,并且轨道以螺旋方式设置在球的内周表面上。\n\n在一个实施方案中,包含含有稀土合金的原料粉末的容器和用于将磁场施加到容器中的原料粉末的容器。\n\n在一个实施例中,造粒装置还包括在磁化装置和球之间。\n\n[简要描述;简介]\n\n图。图1A是示意性地示出根据本发明的实施方案的粒状粉末结构的图,和图1和图2。图1(b)和1(c)通过常规的粒状粉末构成,用于比较,其是通常表示的图。\n\n图。图2(a)和2(b)是用于说明根据本发明的实施例的造粒处理的图,图2(a)是从上面的轨道22的平面图。图2( b)是沿图2(a)的线BB\'截取的横截面图。\n\n图。图3是示意性地示出根据本发明的实施例的造粒装置120的视图。\n\n图。图4是示意性地示出图1中所示的造粒装置120的球120a的构造的视图。从上面观察图3。\n\n图。图5是图5所示的造粒装置120的球120a的局部剖视透视图。\n\n图。图6是示意性地示出根据本发明的实施例的造粒装置100的视图。\n\n实施本发明的最佳方式\n\n在下文中,将参考附图描述根据本发明的实施方案的粒状粉末的制造方法和制造稀土合金烧结体的方法。在以下对实施例的描述中,本发明是通过使用R-Fe-B合金粉末制造烧结磁体的方法的示例来描述,该粉末在磁性特性中特别低,特别是低流动性,条带铸造方法。本发明的特征不限于此,可以使用其他方法产生的稀土合金粉末。\n\n根据本发明的实施方案的制备R-Fe-B合金烧结体的方法产生R-Fe-B基合金的粉末(下文中称为“原料粉”或“初级颗粒粉末”) 。工艺和原料\n\n在使用原料粉末的残余磁化和R-Fe-B基合金的残余磁化和R-Fe-B基合金的残余磁化和聚集力施加到造粒步骤的状态下压制成形。含有颗粒状粉末的粉末。包括形成模塑主体的步骤和烧结模制体的步骤。通过通过已知方法磁化所获得的烧结体,获得R-Fe-B基烧结磁体。可以在烧结之后的任何时间进行磁化过程,并且可以在烧结磁体的使用者之前立即执行。这里,未磁化的也称为烧结磁体。\n\n在根据本发明的实施方案的制造R-Fe-B基合金烧结体的方法中,使用原料粉末的残留磁化引起的粘合进行造粒。因此,可以使用比现有技术的较低添加量或低结合力的粘合剂的粘合剂。此外,可以省略添加造粒。\n\n参见图1和图2.如图1(a),(b)和(c),将描述根据本发明的实施方案的制备粒状粉末的方法和所得颗粒面粉的特性。图1的左侧是示意性地示出图1的粒状粉末和右侧的视图。图1示意性地示出了取向磁场在腔体中施加的颗粒状粉末的状态,以压制成形。它是一个数字。图。图1A是根据本发明的实施方案的常规粒状粉末12a和(b),并且使用肉芽剂的常规的粒状粉末12b和(c)描述于上述JP-A-10-140202中。该通过该方法获得的粒状粉末12c。\n\n如图1所示。如图1A所示,本实施例的粒状粉末12a被通过磁性内聚力具有残余磁化的主粒子10a弱耦合。这里,示出了未使用颗粒的情况。具有剩余磁化强度的主粒子10a磁耦合以形成磁闭电路,并且粒状粉末12a的残余磁化为轻微(例如,约0 mt以上10 mt(毫塔)或更小)。粒状粉末12a中的初级颗粒10a的残余磁化的方向与图1(c)所示的粒状粉末12c不同,并且随机地面对。例如,初级颗粒10a的平均粒径为1.5μm以上且6.0μm以下,粒状粉末12a的平均粒径为约0.05mm至3.0mm。可以通过将高斯仪表的探针插入粒状粉末来测量残余磁化。\n\n由于该粒状粉末12a具有适当的粒度和形状,因此流动性优异,并且残余磁化也很低,因此它容易填充腔,而不会引起桥接。此外,由于初级颗粒10a仅被磁性粘性力耦合,如图2所示。如图1A所示,通过施加取向磁场(例如,0.1t至0.8t)塌陷和主颗粒10a的主颗粒10a磁场导向。另外,由于含有颗粒,所以烧结体的碳含量不会增加。通过使用粒状粉末12a制造的烧结体而获得的磁体基本上用作原料粉末(基本上为零的残余磁化)。具有相同的磁性。也就是说,通过使用本发明的实施方案的粒状粉末,可以提高流动性和可成形性而不降低磁性。当然,可以添加造粒剂以提高模塑体的强度。由于造粒剂用作辅助辅助的,因此不需要强键合力,并且可以选择量和类型,以便不降低磁特性。\n\n另一方面,如图2所示。如图1(b)所示,通过造粒14键合的原料粉末的初级粒子10b的粒状粉末12b不充分破坏定向磁场,并且因此,结果是获得的。烧结磁体的磁性降低。例如,与没有造粒的未使用原料粉末的情况相比,残留磁化减小约为约1%至10%。另外,由于图1的粒状粉末12b中的主颗粒10b。如图1(b)所示,所以图1(b)的颗粒状粉末12b没有残余磁化,因此未描述箭头。\n\n此外,如图2所示。如图1c所示,当初级颗粒10c对准时,当初级颗粒10c附着并固定初级颗粒10c时,使用磁性粉末12c,尽管粒状粉末12c减小例如,与没有造粒的原材料粉末的情况相比,残留磁化为剩余磁化的剩余磁化为约1%至若干%。下降。此外,如图2中示意性所示。如图1C所示,粒状粉末12c沿磁极的方向变为细长形状,从流动性的观点来看,缺点是不利的。此外,由于粒状粉末12c具有相对大的剩余磁化,除非退磁(退磁),除非它不能填充腔,因为它导致桥接。\n\n另一方面,由于根据本发明的实施例的粒状粉末12a靠近球形,并且残余磁化为小,因此不能需要退磁,并且可以容易地均匀地填充腔。因此,可以采用所谓的称重填充方法,其经受预定的质量粒状粉末,然后填充在腔体中。如上所述,本发明实施方案的粒状粉末12a可以制造烧结磁体,其具有优异的流动性和填充性与腔体具有优异的并且基本上没有磁性降低。\n\n通过造粒方法获得本发明的实施方案的颗粒状粉末,该造粒方法包括将动能给出具有残余磁化的原料粉末的颗粒的方法,通过给出的动能通过滚动作用生长。而且,可以根据需要加入造粒剂。\n\n在根据本发明的实施方案的制造粒状粉末的方法中,在进料粉末输入到颗粒制造装置的底部之前,可以在任何时间进行施加残余磁化到原料粉末的步骤粉末。然而,由于粒状粉末12a的初级粒子10a通过由于残余磁化而通过磁性粘结而粘合,因此当从外部施加磁场时造粒粉末12a塌陷。因此,颗粒的生长过程基本上在零磁场下进行。这是制造图1所示的粒状粉末12c的方法。如图1(c)所示,其中施加磁场以定向初级颗粒10c直到造粒机14最终固定粒状粉末12。与造粒机14相反需要继续。在本说明书中的“基本零磁场”中,通过滚动作用在生长颗粒的过程中,可以获得通过粉末的残余磁化形成磁闭电路的造粒粉末的程度。a弱磁场不会影响残余磁化。\n\n可以使用各种磁场用于施加赋予剩余磁化的磁场。由于初级颗粒的残余磁化可能很小,因此优选使用交替阻尼磁场。用于施加残余磁化的磁场不限于交替阻尼磁场,并且可以使用单调的衰减磁场或另一脉冲磁场或静态磁场。\n\n如果原料粉末的矫顽力也很小,即使施加残留磁化,也可以将其脱磁,直到获得最终的粒状粉末,并且不能保持粒状面粉的形状。因此,优选的是,原料粉末的矫顽力相对较高。具体地,原料粉末在堆积密度为2.0g / cm3当由BH示踪剂测量的矫顽力的值填充到容器中以便是原料粉末的靶矫顽力时,原料粉末优选具有60ka / m或更高的矫顽力,70ka / m更多优选地,它具有上述矫顽力。例如,在R-Fe-B基合金的情况下,总共1.2质量%或更多或更多或Tb为1质量%或更高,或者总共1%或更多的Dy和Tb是优选的。\n\n作为用于压模的R-Fe-B基合金的粉末,优选仅使用如上所述制备的粒状粉末,但从流动性和成形性的观点来看,原料粉末(原颗粒粉末也可以混合和使用。然而,由于当原料粉末的速率增加时,流动性降低,因此优选仅使用粒状粉末,以便通过造粒充分地获得流动性改善效果。另外,当将粒状粉末混合使用原料粉末时,优选将颗粒表面涂有润滑剂。通过用润滑剂涂覆初级颗粒的表面,可以提高R-Fe-B粉末的流动性,并且可以防止R-Fe-B基合金的氧化。而且,磁场压制过程中的取向也得到改善。在本说明书中,粉末(其可含有表面上的氧化物层)基本上仅在基本上稀土合金中,而且还含有用于压制成形的粉末,该粉末包括粒化剂或润滑剂以及稀土合金粉末。而且,它将被称为稀土合金粉末。\n\n使用根据实施例的使用R-Fe-B合金烧结体制造磁体的方法是按步骤的顺序描述的。\n\n首先,使用条带铸造方法生产R-Fe-B基合金薄片(例如,参见,例如,美国专利号5,383,978)。具体地,通过高频溶解,通过已知方法生产的R-Fe-B基合金用作熔融金属。作为R-Fe-B基合金,例如,在美国专利No.4,522,517中描述的规范中描述的那些。No.4,770,723和4,792,368可以适当使用。在基于R-Fe-B的稀土合金的典型组合物中,Nd或Pr主要用作R,Fe是\n\n部分地被归因于过渡元件(例如,CO 4)可以是部分取代的,B可以被C取代。\n\n在1350℃下握住该合金的熔融金属后,辊周长约为1m / s,冷却速度为500℃/秒,在过冷的条件下在单个卷上淬火冷却速率,厚度为0.3毫米是合金薄片。得到。通过在该合金薄片和脆化中吸收氢来获得合金粗粉。通过使用喷射磨机装置在氮气气氛中粉碎该合金粗粉末,例如,平均粒径为1.5μm至6μm,并且通过BET方法的比表面积为约0.45μm。2/ g至约0.55米2获得/ g的合金粉末(原料粉末)。该原料粉末的真实密度为7.5克/厘米3它是。\n\n接下来,将残余磁化施加到所得原料粉末中。这里,磁化装置用于施加具有1.0 T的峰值磁场的交替衰减磁场。\n\n接下来,造粒具有残余磁化的原料粉末。申请人已经描述了一种用日本专利申请No.2001-362436中的流化床造粒方法和日本专利申请No.2002-298621中的流体床造粒方法进行造粒具有残余磁化的原料粉末的方法,但在本发明的一个实施方案中,振动造粒方法可用于比先前应用中描述的方法更容易地生产造粒粉末。\n\n通过制备具有剩余磁化的稀土合金的粉末和底表面倾斜朝向侧表面和侧表面的底表面来限定根据本发明的实施方案的制备颗粒状粉末的制备方法。通过通过振动轨道振动轨道将粉末供应到轨道上,通过粉末和动能的残留磁化,在卡车的纵向转移粉末的同时通过粉末的残余磁化和动能传递粉末。含有通过基本上零磁场使用轧制作用基本上在零磁场下造粒的过程。步骤(c)优选地还包括将粉末在底部侧面上移动的步骤,同时将粉末在卡车中的纵向转移。\n\n将参考图1和图2描述该造粒步骤。2(a)和2(b)。图。图2A是从上方观察的轨道22的平面图。图2(b)是沿图2(a)的Bb\'线截取的剖视图。\n\n具有残余磁化的原料粉末在图2(a)中从左到右转移时造粒。轨道22由底表面22b限定,底表面22b倾斜以便朝向侧表面22a和侧表面22a下方,如图2所示。2(b)。这里,如稍后详细描述的,示出了轨道22在球的内周表面上螺旋设置的结构,并且轨道22(螺旋外侧)中的一个设置有侧面22a,并且底部22b沿一个方向倾斜,但是,例如,当使用直线延伸轨道时,横截面结构也具有图2(b)所示的结构,以及转印方向(轨道的延伸方向)它可能是一个对称配置)。当轨道22以螺旋形构造时,存在相对于相对窄的区域可以布置相对窄的区域的优点。\n\n轨道22水平振动,如图4中的箭头所示。肉芽发生。轧制动作主要通过水平振动获得。另一方面,由于粉末的功能通过垂直振动固结,因此优选提供水平振动和垂直振动。此外,水平振动的幅度也影响转移率,并且可以通过增加水平振动的幅度来增加传送速率。\n\n考虑到造粒效率和传输速率,水平振动和垂直振动的幅度和频率适当地设定轨道长度。从造粒效率的观点来看,垂直振动的幅度优选为0.2mm或更大,更优选为0.3mm以上。从转移速率的观点出发,水平振动的幅度优选为0.5mm或更高,更优选为1.0mm或更大。但是,如果超过2.0mm,则不能获得足够的造粒效果,并且可以降低流动性的提高效果。水平振动和垂直振动的频率例如是70Hz或更高且80Hz或更小,但没有特别限制。水平振动和垂直振动之间的相位关系可以适当地设定并设定为椭圆形振动。\n\n轨道长度优选为4000mm或更大。但是,对于短卡车短设备\n\n在存在多次造粒过程的情况下,可以获得与具有基本上长的轨道长度相同的效果。履带长度影响粒状粉末的形状和粒状粉末的形状。如果轨道长度太短,则不能获得足够大的粒状粉末,粒状面粉的形状不充分良好装备,并且/或足够尺寸的粒状面粉的比例可能降低。\n\n在振动轨道22上,相对小的粒状粉末1a聚集在倾斜底表面22b的高侧,并且相对大的造粒粉末1b是倾斜底部22b(靠近侧面22a)的下侧。如上所述,当粒状粉末由于其尺寸而不均匀时,造粒效率降低,因此如图2所示。如图2A所示,中心22a在轨道22的中心方向上延伸并倾斜在转移方向上。通过提供当轨道22的侧表面22b侧面的相对大的粒状粉末1b与底表面22b的倾斜相对并移动到底表面22b的高侧,相对大的粒状粉末时,引导表面22c比较1B。与小粒状粉末1A混合并有效造粒。相对于转印方向(导向表面22c的正常和传送方向以及轨道的轨道的纵向(当轨道弯曲时的转印方向(轨道的纵向),引导表面22c至少为30°。优选以120°或更大和150°或更小的角度倾斜。如果引导表面22c的倾斜角度小于30°,则造粒效果不足,小粒状面粉的比例可能增加,并且粒度的变化可能增加,并且如果它超过60°,则转移效率降低当它超过60°时。我是不可取的。\n\n引导表面22c之间的距离适当地设置在轨道22的宽度,轨道22的长度和传送速率(振动条件)之间的关系中。相邻引导表面22c之间的距离设定为例如约80mm或更大。如果它短于约80毫米,则造粒效果未确定。另外,如果超过大约200毫米,则引导表面的造粒效果降低,这是不优选的。\n\n接下来,参考图1和图2.参照图3至图5,将描述根据本发明的粒状粉末的制造装置(造粒装置)120的配置示例。\n\n如图1所示。如图3所示,造粒装置120具有球120a和振动装置120b。作为振动装置120B,由于基本相同的是由已知的球振动型部分进料器(例如,Makoto Shinko Co.,Ltd。),振动装置120B的构造(例如,2001-114412的描述省略了问题的问题,下面将描述球120a的结构。\n\n图。图4是示意性地示出从上面观察的球120a的配置的视图。图5是球120a的局部剖视透视图。\n\n球120a设置有轨道122,轨道122由朝向侧表面122a和侧表面122a倾斜的底表面122b以螺旋方式倾斜在内圆周表面上。此外,引导表面(图2中的引导表面22c)沿侧表面122a的轨道122的中心方向延伸,并且由凸部122d的侧表面形成。凸部122d的表面在作为引导表面(图2中的引导表面22c)上的转印方向上倾斜的表面,以及沿反向倾斜的表面,并且相反的方向以相反的方向存在。通过防止粉末从引导表面的背面停留,可以提高转移效率。当然,代替凸部122d,具有引导表面22c的板,如图2所示。可以使用图2所示。\n\n另一方面,轨道122的内部(较高的底表面122b)在轨道122的中心方向上延伸,并且具有沿转移方向倾斜的卡纸122c。峰值板122c用来返回颗粒状粉末通过凸部122d的引导表面对底表面122b的倾斜者不利地移动,并且用来再次返回到侧表面122a(底表面122b的下侧) 。通过提供该放置板122c,可以增加造粒效果,可以获得改善粒状面粉发射的效果。卡纸122c优选地设置在螺旋形的轨道122的内周侧上,并且在图1所示的配置中。\n\n球120a具有整体的纤薄形状形状,并且在中心部分的底表面124上引入稀土合金的粉末。三角形金字塔形突起125设置在底表面124的中心部分,以及在突起125周围的圆形底部的切线方向上延伸的切向脊小突起126。\n\n它与轨道122有效地形成,轨道122设置在内圆周表面上的附加粉末。为了提高造粒效率,优选在将粉末放入球120a之前设定原料粉末。\n\n引入在球120a中的粉末如参考图1所述造粒。将其转印到球120a的顶部的出口128。取出端口128连接到例如用于下一个形成过程的馈线装置(未示出)。\n\n此时,当粉末的接触电阻(摩擦阻力)具有剩余磁化和轨道122的表面(侧表面122a和底表面122b),以及卡纸122c和凸部122d的表面,所述粉末粘附到表面上,可以减少造粒效率。因此,优选的是,与粉末接触的表面是光滑的,例如,使用不锈钢制造诸如镜面表面的不锈钢的球120a,并且表面是进一步的氨基甲酸酯涂覆。另外,当将造粒加入粉末时,粉末容易粘附到球120a的表面上,使得更优选使用相当的造粒。在没有残留磁化的粉末的情况下,通过加入造粒剂难以获得造粒粉末。\n\n下面示出了这里使用的实施例的造粒装置120的具体说明书的示例。\n\n垂直振动:0.3mm幅度\n\n水平振动:1.5mm幅度\n\n球底部124:直径350毫米,\n\n从水平倾斜角度:底部8°\n\n轨道10°\n\n投影125:底部直径100mm,高度50mm\n\n轨道122:宽度35 mm,侧高30 mm,\n\n长度4000毫米\n\n长周边卡车直径:560毫米\n\nJAMAKI板122C:侧转动方向的角度45°\n\n侧长22毫米\n\n凸部122D:侧转动方向的角度45°\n\n侧长30毫米\n\n另外,当使用本发明的造粒方法时,不需要控制粉末周围气体的压力,因此可以在大气压下进行,但由于稀土合金的粉末可能是氧化,造粒方法优选在惰性气体(氮气或惰性气体)气氛下进行。例如,整个造粒装置120用盖子覆盖,并且盖子的内部可以填充有氮气。盖子不必是密封结构,并且例如,可以流动氮气。\n\n由上述稀土合金的粉末(平均粒径为1.5μm至6μm)制备的粒状粉末的平均粒径优选在0.05mm至3.0mm的范围内。通常,由于粒状粉末中含有的初级颗粒是轻微的,并且第三颗粒上方的高阶粒状粉末也非常小,所以二次颗粒的平均粒度基本上是粒状粉末的平均粒度被视为粒径的代表。这里,随着粒状粉末的平均粒径,使用通过微观观察获得的二次粒子的平均粒径。如果粒状面粉的平均粒径小于0.05mm,则难以在液体的低改善程度和充分的密度下获得均匀的模塑体。另一方面,如果粒状面粉的平均粒径大于3mm,则腔体的填充性降低,并且难以以足够的密度获得均匀的模制体。进一步优选的是,粒状面粉的平均粒径在0.1mm至1.5mm的范围内。当使用此处示例的造粒装置120时,可以有效地生产粒状粉末在0.1mm至1.5mm的范围内。\n\n接下来,将获得的粒状粉末压制成型,但是这里将描述造粒机120的其他优点。与传统的流化床造粒装置不同,造粒装置120具有以下优点:用于烧结磁体的稀土合金模制品的生产线可以紧凑和/或自动。也就是说,上述造粒装置120示意性地示出了图2中示出。\n\n可以配置颗粒装置100。\n\n造粒装置100与上述造粒装置120一体地形成,并且用于执行造粒装置120的前处理的装置。也就是说,造粒装置100连接到接收原料粉末,计量装置(称重装置)140,磁化装置150和具有连接管的焊接机器160的料斗130。\n\n稀土合金的原料粉末充电到料斗130,仪表140仪表被计量到预定的质量送料粉末,并供应到预定质量磁化装置150的容器。磁化装置150具有磁路(未示出),并且例如,通过向线圈提供预定脉冲电流,产生交替衰减磁场,并且将残余磁化施加到容器中的原料粉末。\n\n将具有残余磁化的粉末通过粒状机器160夹持成预定尺寸的质量,并且被供应到造粒机120的球120a。粒状汇编160由例如开口直径为0.5mm或更大且1.5mm的网格(金网络)制成。由于粉末机160分开并供应到预定尺寸的质量的粉末作为芯来造粒,所以得到的粒状粉末的粒度范围是有限的,并且可以抑制其产生的异常大的造粒。由于网眼的开口直径根据靶粒状粉末的粒径适当地设定,所以获得的粒状粉末的粒径是残余磁化的尺寸,因为它使用由于残余磁化引起的凝聚力。受限限制在上述范围内,谷物的效果降低。特别地,如果开口直径小于0.5mm,则造粒效率降低,因为质量不容易用作造粒核。\n\n而且,网格可以弯曲,例如,在波纹管中。通过弯曲改善粉末分选的处理效率。此外,为了提高粉末分选的处理效率,可以通过将振动机构连接到网状物来振动网状物。\n\n粒状面粉从造粒装置120的去除端口128(参见图4)排出。如果使用进料器装置等用于下一个成形过程中使用的饲养盒的饲养盒,则可以在输入原料粉末后自动化到压制成形过程。\n\n接下来,通过压制所获得的造粒粉末形成模制体。这里,仅使用粒状粉末来形成模塑体。已知的压制成形装置可用于压模,并且通常使用用于在模腔(管孔)中压制粉末的单轴压制成形装置。\n\n将粒状面粉填充在单轴压制成型机的模腔中。将空腔填充到腔中的步骤是,例如,使用筛子的填充方法,日本专利公开No.59-40560,JP-A-10-58198和日本专利申请公开号63-110521和JP-A-2000-可以使用在248301号公开中公开的使用馈线的填充方法使用填充方法(共同为“丢弃方法”)来执行。\n\n特别地,当形成小的模塑体时,优选使用腔体测量对应于腔的内部体积的粒状粉末的量。例如,在移动具有开口的馈送器箱上以向下移动到腔体并抓取造粒的面粉之后,通过将供应到腔的剩余粒状粉末释放到腔体中相对均匀。可以用预定量的粒状粉末填充。当然,单独称量的粒状粉末可以使用漏斗等填充到腔中。\n\n在腔内填充颗粒状粉末后,降低了单轴压制装置的上冲头,并将对准磁场施加到腔的开口,并且粒状粉末被破坏到初级颗粒,1个下一个颗粒中断是对齐的。根据本发明的实施方案的粒状粉末可靠地塌陷到初级颗粒,磁场为0.1t至0.8t。然而,考虑到足够的取向度,期望约0.5t至1.5t。磁场的方向是例如具有压力方向的垂直方向。在以这种方式施加磁场的同时,例如,在98MPa的压力下,粉末是用垂直冲头按压的第一轴。结果,获得具有相对密度(模塑体密度/真密度)的压块是0.5至0.6。根据需要,磁场的方向可以平行于压力方向。通过本发明获得的粒状粉末在填充步骤中不被破坏,并且通过施加定向磁场,具有中等强度的崩解与初级颗粒。\n\n接下来,所得成型体在真空或惰性气体气氛中,例如约1000℃。\n\n在约1180℃的温度下,烧结约1小时至6小时。由于本实施方案的颗粒状粉末仅含有不含造粒剂的造粒剂,或者可以在烧结步骤中基本上除去,因此不需要分开分离脱抗器过程。此外,在约200℃至800℃的温度下,在约2Pa的惰性气体气氛下,在约2Pa的惰性气体气氛下进行常规典型的典型缺乏装置。在约2pa至800℃的温度下进行约3小时至约6小时。\n\n将所得烧结体在约450℃至约800℃的温度下老化约1小时至8小时以获得R-Fe-B基烧结磁体。此后,在任何阶段,最终完成磁化磁化。\n\n根据本发明,如上所述,使用流动性和可成形性优异的造粒粉末,使得填充量的变化小并且均匀地填充在腔中。因此,通过压制成形获得的模塑体的质量和尺寸几乎没有变化。另外,模塑体也缺乏碎裂或裂化。\n\n此外,由于本实施例的粒状粉末的初级颗粒基本上通过残余磁化的磁性粘性力基本上耦合,因此取向磁场的施加可靠地塌陷一次颗粒。因此,初级粒子的取向程度不会降低。另外,由于由于造粒剂的剩余碳而导致的磁性降低最小化,因此可以获得具有优异磁特性的烧结磁体。因此,根据本发明,高质量的R-Fe-B合金烧结磁铁可以以高生产效率制造。\n\n【例子】\n\n在下文中,将描述本发明的示例。\n\nR-Fe-B合金粉末如下制备。作为原料,使用含有99.9%的电解铁的融合物合金制备合金熔融金属,纯度为99.9%,19.8%的纯净。从该合金熔融金属,实施例1(组合物:34.0重量%Nd,1.0重量%,1.0重量%B,余量:Fe)和实施例2(组合物:30.0重量%Nd,5.0%(重量)得到R-Fe-B基合金的1.0wt%B,残留:Fe)。该薄片用于使用喷射磨机,惰性气体(例如,2铣削气体,气体压力58.8MPa,得到一个平均粒径为约3μm的原料粉末。实施例1的粉末的矫顽力为60kA / m,实施例2的粉末的矫顽力为120kA / m。\n\n接下来,在施加到上述实施例的原料粉末施加交替衰减磁场(峰值磁场1.0t)之后,在施加残余磁化之后,使用上述造粒装置120的平均粒径为0.3mm。生产粮食。没有添加肉芽。所得造粒粉末的残余磁化为约0.2mT。表1显示了测量所得粒状粉末的弹性角度的结果。在表1中,作为比较例1,使用异烷烃(2质量%)使用异烷烃(2质量%)而无需造粒剂而不提供与实施例1的原料粉末的残留磁化,通过轧烷烃(2质量%)产生的粒状粉末。显示角度。另外,比较例2显示了实施例1的原料粉末本身的额定值。\n\n\n\n\n\n具有大储存器的粉末差,流动性更好,因为角度较小。如对比例2所示,如果原材料粉末未造粒,则飞溅角约为52°,并且流动性低。另一方面,在实施例1和2的第一和第二压粉的情况下,伴随角度降低至小于45°。特别地,实施例1和2的粒状面粉是比较例1的压制粉末的较小角度和优异的流动性。也就是说,据了解,在不使用造粒的情况下不使用残余磁化而改善流动性。\n\n表1中所示的每个压模的粉末以使用上述馈线盒的方式填充在20mm长的垂直,水平15mm和10mm深度的腔体中,并且单轴压模(98MPa,定向磁场(1.3 T)在压力机方向上适用于直角)。该填充步骤和压制成型步骤在所有实施例和比较例的相同条件下进行。另外,形成改变压力条件和不同模塑体密度(绿色密度)的模制体。\n\n将得到的模塑体在Ar气氛中在1060℃下烧结约4小时,然后在500℃下进行500℃。进行1小时以获得烧结体。此外,通过在2387ka / m的条件下磁化该烧结体来获得烧结磁体。对于每个实施例和比较例,样品的数量为50。所得烧结磁体的残余磁化Br(t)示于表2中。\n\n\n\n从表2中可以看出,实施例1的BR不识别对比例2的BR的显着差异,并且具有优异的磁性。添加制粒的比较例1的BR低于实施例1和比较例2。这是因为肉芽保留在烧结磁体中作为碳。\n\n如上所述,通过由于初级颗粒的残留磁化引起的使用磁性粘合产生粒状面粉,因此使用颗粒化剂而不含造粒的颗粒粉末,因为可以获得上述流动性,可以制造具有a的烧结磁体磁性特性优于常规或多种。此外,如果仅使用初级颗粒的残留磁化制备粒状粉末,则可以基本上消除磁性降低。\n\n【工业可用性】\n\n根据本发明,提供了一种制备稀土合金颗粒粉末的方法,其流动性和压制成形性优异,并且可以制造具有优异磁性的磁体。通过使用该粒状粉末,提供了一种用于生产高质量稀土合金烧结体,具有高生产效率的方法。\n\n根据本发明,由于可以改善稀土合金粉末的流动性和可成形性而不降低磁性,因此可以改善具有磁性磁特性的磁性磁性磁性的压制成形难以的成形烧结磁体。此外,可以缩短造粒时间并省略Demoid装置的过程,并提高稀土烧结磁体的生产率。');
INSERT INTO `os_patent_instruction_text` VALUES (13025, 22854, 'TECHNICAL FIELD \n\n[0001]The present invention relates to a method and apparatus for making a rare-earth alloy granulated powder and a method for making a rare-earth alloy sintered body.\n\nBACKGROUND ART \n\n[0002]A rare-earth alloy sintered magnet (permanent magnet) is normally produced by compacting a powder of a rare-earth alloy, sintering the resultant powder compact and then subjecting the sintered body to an aging treatment. Permanent magnets currently used extensively in various applications include rare-earth-cobalt based magnets and rare-earth-iron-boron based magnets. Among other things, the rare-earth-iron-boron based magnets (which will be referred to herein as \"R-Fe-B based magnets\", where R is one of the rare-earth elements including Y, Fe is iron, and B is boron) are used more and more often in various electronic appliances. This is because an R-Fe-B based magnet exhibits a maximum energy product, which is higher than any of various other types of magnets, and yet is relatively inexpensive.\n\n[0003]An R-Fe-B based sintered magnet includes a main phase consisting essentially of a tetragonal R 2 Fe 14 B compound, an R-rich phase including Nd, for example, and a B-rich phase. In the R-Fe-B based sintered magnet, a portion of Fe may be replaced with a transition metal such as Co or Ni and a portion of boron (B) may be replaced with carbon (C). An R-Fe-B based sintered magnet, to which the present invention is applicable effectively, is described in United States Patents Nos. 4,770,723 and 4,792,368, for example.\n\n[0004]United States Patent Application Laid-open Publication Number US 5,116,434 discloses a method for producing a ferromagnetic material such as Re 2 Fe 14 B 1  by preparing a powder with remanent magnetisation, wherein said powder is exposed to a non-alternating magnetizing field. Thereafter, said powder is crushed, directly mixed with a binder and pressed into pellets.\n\n[0005]Further, in the prior art, an R-Fe-B based alloy has been prepared as a material for such a magnet by an ingot casting process. In an ingot casting process, normally, rare-earth metal, electrolytic iron and ferroboron alloy as respective start materials are melted by an induction heating process, and then the melt obtained in this manner is cooled relatively slowly in a casting mold, thereby preparing an alloy ingot.\n\n[0006]Recently, a rapid cooling process such as a strip casting process or a centrifugal casting process has attracted much attention in the art. In a rapid cooling process, a molten alloy is brought into contact with, and relatively rapidly cooled by, a single chill roller, a twin chill roller, a rotating disk or the inner surface of a rotating cylindrical casting mold, thereby making a solidified alloy, which is thinner than an alloy ingot, from the molten alloy. The solidified alloy prepared in this manner will be referred to herein as an \"alloy flake\". The alloy flake produced by such a rapid cooling process usually has a thickness of about 0.03 mm to about 10 mm. According to the rapid cooling process, the molten alloy starts to be solidified from its surface that has been in contact with the surface of the chill roller. That surface of the molten alloy will be referred to herein as a \"roller contact surface\". Thus, in the rapid cooling process, columnar crystals grow in the thickness direction from the roller contact surface. As a result, the rapidly solidified alloy, made by a strip casting process or any other rapid cooling process, has a structure including an R 2 Fe 14 B crystalline phase and an R-rich phase. The R 2 Fe 14 B crystalline phase usually has a minor-axis size of about 0.1 µm to about 100 µm and a major-axis size of about 5 µm to about 500 µm. On the other hand, the R-rich phase, which is a non-magnetic phase including a rare-earth element R at a relatively high concentration and having a thickness (corresponding to the width of the grain boundary) of about 10 µm or less, is dispersed on the grain boundary between the R 2 Fe 14 B crystalline phases.\n\n[0007]Compared to an alloy made by the conventional ingot casting process or die casting process (such an alloy will be referred to herein as an \"ingot alloy\"), the rapidly solidified alloy has been quenched in a shorter time (i.e., at a cooling rate of 10 2[0008]An alternative alloy preparation method called \"Ca reduction process (or reduction/diffusion process)\" is also known in the art. This process includes the processing and manufacturing steps of: adding metal calcium (Ca) and calcium chloride (CaCl) to either the mixture of at least one rare-earth oxide, iron powder, pure boron powder and at least one of ferroboron powder and boron oxide at a predetermined ratio or a mixture including an alloy powder or mixed oxide of these constituent elements at a predetermined ratio; subjecting the resultant mixture to a reduction/diffusion treatment within an inert atmosphere; diluting the reactant obtained to make a slurry; and then treating the slurry with water. In this manner, a solid of an R-Fe-B based alloy can be obtained.\n\n[0009]It should be noted that any small block of a solid alloy will be referred to herein as an \"alloy block\". The \"alloy block\" may be any of various forms of solid alloys that include not only solidified alloys obtained by cooling a melt of a material alloy (e.g., an alloy ingot prepared by the conventional ingot casting process or an alloy flake prepared by a rapid cooling process such as a strip casting process) but also a solid alloy obtained by the Ca reduction process.\n\n[0010]According to the prior art, an alloy powder to be compacted is obtained by performing the processing steps of: coarsely pulverizing an alloy block in any of these forms by a hydrogen absorption process, for example, and/or any of various mechanical milling processes (e.g., using a disk mill); and finely pulverizing the resultant coarse powder (with a mean particle size of 10 µm to 500 µm) by a dry milling process using a jet mill, for example.\n\n[0011]The R-Fe-B based alloy powder to be compacted preferably has a mean particle size of 1.5 µm to about 6 µm to achieve sufficient magnetic properties. It should be noted that the \"mean particle size\" of a powder refers to herein an FSSS particle size unless stated otherwise. However, when a powder with such a small mean particle size is used, the resultant flowability, compactibility (including cavity fill density and compressibility) and productivity will be bad.\n\n[0012]To overcome this problem, a method for coating the surface of alloy powder particles with a lubricant was proposed. For example, Japanese Patent Application Laid-Open Publication No. 08-111308 and United States Patent No. 5,666,635 disclose the technique of making an R-Fe-B based alloy fine powder (with a mean particle size of 1.5 µm to 5 µm) by adding 0.02 mass% to 5.0 mass% of a lubricant (including at least one liquefied fatty acid ester) to an R-Fe-B based alloy coarse powder with a mean particle size of 10 µm to 500 µm and then pulverizing the mixture by a jet mill within an inert gas.\n\n[0013]The lubricant not only improves the flowability and compactibility (or compressibility) of the powder but also functions as a binder for increasing the hardness (or strength) of the compact. Nevertheless, the lubricant may also remain as residual carbon in the sintered body to possibly deteriorate the magnetic properties. Accordingly, the lubricant needs to exhibit good binder removability. For example, Japanese Patent Application Laid-Open Publication No. 2000-306753 discloses, as preferred lubricants with good binder removability, depolymerized polymers, mixtures of a depolymerized polymer and a hydrocarbon solvent, and mixtures of a depolymerized polymer, a low-viscosity mineral oil and a hydrocarbon solvent.\n\n[0014]According to this method using a lubricant, however, a certain degree of improvement is achieved but it is still difficult to fill the cavity with the powder sufficiently uniformly or achieve a sufficient degree of compactibility. Among other things, a powder made by a strip casting process or any other rapid quenching process (at a cooling rate of 10 2[0015]As another method for improving the flowability and compactibility of an R-Fe-B based alloy powder, there was a proposal to make a granulated powder.\n\n[0016]For example, Japanese Patent Application Laid-Open Publication No. 63-237402 discloses that the compactibility should be improvable with a granulated powder to be obtained by adding 0.4 mass% to 4.0 mass% of mixture of a paraffin compound (which is liquid at room temperature) and an aliphatic carboxylate to the powder, and mulling and granulating them together. A method in which polyvinyl alcohol (PVA) is used as a granulating agent is also known. It should be noted that the granulating agent, as well as a lubricant, functions as a binder for increasing the strength of the compact.\n\n[0017]If the granulating agent disclosed in Japanese Patent Application Laid-Open Publication No. 63-237402 is used, however, then the binder removability is so bad that the magnetic properties of an R-Fe-B based sintered magnet will be deteriorated by carbon remaining in the sintered body.\n\n[0018]On the other hand, the granulated powder produced by applying a spray dryer method to PVA has high binding force and therefore is too hard to be broken completely even on the application of an external magnetic field. Accordingly, the primary particles thereof cannot be aligned with the magnetic field sufficiently and no magnets with excellent magnetic properties can be obtained. PVA also has bad binder removability and carbon derived from PVA is likely to remain in the magnets. This problem may be overcome by performing a binder removal process within a hydrogen atmosphere. However, it is still difficult to remove that carbon sufficiently.\n\n[0019]To solve the problem that the granulated powder is difficult to break even under the aligning magnetic field, the applicant of the present application proposed a method for making a granulated powder, in which respective powder particles (i.e., primary particles) aligned with a magnetic field applied are coupled together with a granulating agent, by granulating the material powder with a static magnetic field applied thereto (see Japanese Patent Application Laid-Open Publication No. 10-140202). If this granulated powder is used, the magnetic properties are improvable compared with using a granulated powder in which primary particles not aligned with a magnetic field applied are coupled together with a granulating agent. However, it is difficult to align the powder particles being pressed with the magnetic field sufficiently. Consequently, the resultant magnetic properties are lower than a situation where a non-granulated rare-earth alloy powder was used.\n\n[0020]Various granulating agents and granulating methods have been proposed so far as described above. However, a method for mass-producing a rare-earth alloy granulated powder, which has excellent flowability and compactibility and which can contribute to producing magnets with good magnetic properties, has not yet been developed.\n\n[0021]On the other hand, demands for smaller, thinner and performance-enhanced magnets have been escalating. Thus, the development of a method for producing small or thin high-performance magnets with high productivity is awaited. Generally speaking, if a rare-earth alloy sintered body (or a magnet obtained by magnetizing the sintered body) is machined, then its magnetic properties will deteriorate due to a strain caused by the machining process. Such deterioration in magnetic properties is non-negligible in a small magnet. Accordingly, the smaller the size of the magnet to be obtained, the more necessary it is to make a sintered body that has so high dimensional accuracy as to need almost no machining at all and also has the final shape to be obtained. Demands for a rare-earth alloy powder with excellent flowability and compactibility (e.g., an R-Fe-B based alloy powder among other things) have been further growing for these reasons, too.\n\nDISCLOSURE OF INVENTION \n\n[0022]In order to overcome the problems described above, a primary object of the present invention is to provide a method for making a rare-earth alloy granulated powder, which has good flowability and good compactibility and which makes it possible to produce a magnet with excellent magnetic properties, and a method for making a quality rare-earth alloy sintered body with high productivity.\n\n[0023]A method for making a rare-earth-iron-boron based alloy granulated powder according to the present invention includes the steps as defined in claim 1.\n\n[0024]Preferred embodiments of the present application are subject to the dependent claims.\n\n[0025]In one preferred embodiment, the step (c) includes the step of transporting the powder along the length of the track while making some particles of the powder, located near the side surface, climb the sloped lower surface.\n\n[0026]In another preferred embodiment, the side surface is arranged spirally and is located on the outer side of the track.\n\n[0027]In another preferred embodiment, the step (b) is carried out after the powder has been subjected to particle sizing.\n\n[0028]In another preferred embodiment, the powder has a mean particle size of 1.5 µm to 6 µm.\n\n[0029]In another preferred embodiment, a granulated powder with a mean particle size of 0.05 mm to 3.0 mm is obtained.\n\n[0030]A method for making a rare-earth alloy sintered body according to the present invention includes the steps as defined in claim 7.\n\n[0031]An apparatus of making a granulated powder according to the present invention has the features as specified in claim 8.\n\n[0032]In one preferred embodiment, the apparatus further includes a bowl to receive a rare-earth alloy powder with remanent magnetization, and the track is arranged spirally on an inner surface of the bowl.\n\n[0033]In another preferred embodiment, the apparatus further includes a particle sizer between the magnetizer and the bowl.\n\nBRIEF DESCRIPTION OF DRAWINGS \n\n[0034] FIG. 1(a) schematically illustrates the structure of a granulated powder according to a preferred embodiment of the present invention, and FIGS. 1(b) and 1(c) schematically illustrate the structures of conventional granulated powders for the purpose of comparison. FIGS. 2(a) and 2(b) illustrate a granulating process step according to a preferred embodiment of the present invention, wherein FIG. 2(a) is a plan view of a track 22  as viewed from over it, and FIG. 2(b) is a cross-sectional view thereof as viewed on the plane B-B\'  shown in FIG. 2(a). FIG. 3 schematically illustrates a granulator 120  according to a preferred embodiment of the present invention. FIG. 4 is a plan view schematically illustrating the configuration of the bowl 120A  of the granulator 120  shown in FIG. 3.  FIG. 5 is a perspective view partly in section of the bowl 120A  of the granulator 120  shown in FIG. 3.  FIG. 6 schematically illustrates a granulating system 100  according to a preferred embodiment of the present invention. \n\nBEST MODE FOR CARRYING OUT THE INVENTION \n\n[0035]Hereinafter, a method for making a granulated powder and a method for making a rare-earth alloy sintered body according to preferred embodiments of the present invention will be described with reference to the accompanying drawings. In the following description of preferred embodiments, the features of the present invention will be described as being applied to a method for making a sintered magnet of an R-Fe-B based alloy powder prepared by a strip casting process, which exhibits excellent magnetic properties but low flowability. However, the present invention is in no way limited to those specific preferred embodiments. Thus, a rare-earth alloy powder made by any other method may also be used instead.\n\n[0036]A method for making an R-Fe-B based alloy sintered body according to a preferred embodiment of the present invention includes the steps of: making an R-Fe-B based alloy powder (which will be referred to herein as a \"material powder\" or \"primary particle powder\"); generating remanent magnetization in the material powder; granulating the powder by utilizing agglomeration force produced by the remanent magnetization of the material powder; making a compact by pressing the R-Fe-B based alloy powder, including the granulated powder, with a magnetic field applied thereto; and sintering the compact. By magnetizing the resultant sintered body by a known method, an R-Fe-B based sintered magnet can be obtained. It should be noted that the magnetizing process step may be carried out at any arbitrary point in time after the sintering process. For example, the user of the sintered magnet may perform the magnetizing process step just before he or she uses the sintered magnet. Even a non-magnetized one will also be referred to herein as a \"sintered magnet\".\n\n[0037]In a method for making an R-Fe-B based alloy sintered body according to a preferred embodiment of the present invention, the powder is granulated by utilizing the agglomeration force produced by the remanent magnetization of the material powder. Accordingly, it is possible to either reduce the amount of a granulating agent to be added or use a binder with low binding force than a conventional one. Furthermore, even the addition of the granulating agent itself may be omitted.\n\n[0038]Hereinafter, the features of a granulated powder making method and a resultant granulated powder according to a preferred embodiment of the present invention will be described with reference to FIGS. 1(a), 1(b) and 1(c).  On the left-hand side of FIG. 1,  illustrated schematically are the structures of respective granulated powders. On the righthand side of FIG. 1,  illustrated schematically are the states of respective granulated powders to which an aligning magnetic field has been applied in a cavity for the purpose of compaction. More specifically, FIG. 1(a) illustrates a granulated powder 12a  according to a preferred embodiment of the present invention, FIG. 1(b) illustrates a conventional granulated powder 12b  for which a granulating agent has been used, and FIG. 1(c) illustrates a granulated powder 12c  obtained by the method described in Japanese Patent Application Laid-Open Publication No. 10-140202 identified above.\n\n[0039]As shown in FIG. 1(a), in the granulated powder 12a  of this preferred embodiment, primary particles 10a with remanent magnetization are weakly coupled together via magnetic agglomeration force. In the illustrated example, no granulating agent is supposed to be used. These primary particles 10a  with remanent magnetization are magnetically coupled together so as to form a magnetic closed circuit, and the remanent magnetization of the granulated powder 12a  is very small (e.g., more than about 0 mT and equal to or smaller than about 10 mT (millitesla)). In this granulated powder 12a , the remanent magnetization of the primary particles 10a  is oriented at random unlike the granulated powder 12c  shown in FIG. 1(c).  The primary particles 10a  may have a mean particle size of about 1.5 µm to about 6.0 µm and the granulated powder 12a  may have a mean particle size of about 0.05 mm to about 3.0 mm, for example. The remanent magnetization may be measured by inserting a probe of a gauss meter into the granulated powder.\n\n[0040]This granulated powder 12a  has a moderate particle size and an appropriately shape and can exhibit excellent flowability. In addition, this granulated powder 12a  also has low remanent magnetization and can be loaded into a cavity easily and uniformly without causing any bridging. Furthermore, these primary particles 10a  are just coupled together via the magnetic agglomeration force. Accordingly, as shown on the left-hand side of FIG. 1(a), the granulated powder 12a  can be broken down into the primary particles 10a  just as intended by applying an aligning magnetic field (of about 0.1 T to about 0.8 T, for example) thereto. As a result, the primary particles 10a  can be aligned with the magnetic field applied. Also, since the granulated powder 12a  includes no granulating agent, the amount of carbon included in the sintered body never increases. A magnet obtained by magnetizing a sintered body made from this granulated powder 12a  has substantially the same magnetic properties as a magnet obtained without granulating the material powder (with substantially zero remanent magnetization) at all. That is to say, by using the granulated powder of the preferred embodiment of the present invention, the flowability and compactibility can be improved without deteriorating the magnetic properties. Optionally, it is naturally possible to add a granulating agent for the purpose of increasing the strength of the compact, for example. As such a granulating agent is used just as an additional agent, the granulating agent does not have to exhibit strong binding force. Thus, the amount and type of the granulating agent may be selected so as not to deteriorate the magnetic properties.\n\n[0041]In contrast, the granulated powder 12b,  obtained by binding the primary particles 10b  of the material powder together with a granulating agent 14,  cannot be sufficiently broken down even under an aligning magnetic field as shown in FIG. 1(b).  As a result, the magnetic properties of the resultant sintered magnet deteriorate. Compared with a magnet obtained without granulating the material powder at all, the remanent magnetization of that sintered magnet decreases by about 1%  to about 10%. It should be noted that arrows are omitted from the primary particles 10b  of the granulated powder 12b  shown in FIG. 1(b) because the particles 10b  have no remanent magnetization.\n\n[0042]Furthermore, if a granulated powder 12c  is obtained by binding and fixing primary particles 10c  together with a granulating agent 14  while aligning the primary particles 10c  under a static magnetic field as shown in FIG. 1(c), then the deterioration in magnetic properties can be minimized but the granulated powder 12c  cannot be fully broken down into the primary particles 10c.  Accordingly, compared with a magnet obtained without granulating the material powder at all, the remanent magnetization of the resultant sintered magnet decreases by about one to several percent. Also, as schematically illustrated in FIG. 1(c),  the granulated powder 12c  is elongated in the directions of the magnetic poles, which is disadvantageous in terms of flowability. Furthermore, since the granulated powder 12c  has relatively large remanent magnetization, the granulated powder 12c  will produce bridging and cannot be loaded into a cavity unless demagnetized once.\n\n[0043]In contrast, the granulated powder 12a  of the preferred embodiment of the present invention is almost spherical in shape, has too small remanent magnetization to require any demagnetization, and can fill a cavity easily and uniformly. Accordingly, a so-called \"measuring and loading technique\", in which a predetermined mass of granulated powder is measured in advance and then loaded into a cavity, can be adopted. As described above, the granulated powder 12a  of the preferred embodiment of the present invention can exhibit excellent flowability and cavity-filling ability and can contribute to making a sintered magnet substantially without deteriorating the magnetic properties.\n\n[0044]A granulated powder according to a preferred embodiment of the present invention is obtained by a granulating method including the steps of giving kinetic energy to particles of a material powder with remanent magnetization and allowing the particles to grow under a tumbling action produced by the kinetic energy given. Optionally, a granulating agent may be added if necessary.\n\n[0045]In a method for making a granulated powder according to a preferred embodiment of the present invention, the step of generating remanent magnetization in the material powder may be carried out at an arbitrary point in time before the material powder is fed onto the bottom of the apparatus of making the granulated powder. However, the primary particles 10a  of the granulated powder 12a  of this preferred embodiment are just coupled together under magnetic agglomeration force produced by the remanent magnetization. Accordingly, the granulated powder 12a  is broken down upon the application of an external magnetic field. For that reason, the particles are allowed to grow under a substantially zero magnetic field. This is contrary to the method for making the granulated powder 12c  shown in FIG. 1(c) in which a magnetic field needs to be applied continuously to align the primary particles 10c  until the granulated powder 12  is definitely fixed with the granulating agent 14.  As used herein, the \"substantially zero magnetic field\" refers to a magnetic field which is weak enough to obtain a granulated powder where a magnetic closed circuit has been formed by the remanent magnetization of the powder and to have no effects on the remanent magnetization of the powder while the particles grow due to the tumbling action.\n\n[0046]The magnetic field to be applied to generate remanent magnetization may be any of various magnetic fields. Since the primary particles may have a little remanent magnetization, an alternating demagnetizing field is used.\n\n[0047]It should be noted that even after the remanent magnetization has been generated, a material powder with low coercivity might lose the magnetization and the shape of the granulated powder before the final granulated powder is obtained. For that reason, the material powder preferably has relatively high coercivity. Specifically, if the coercivity value of a material powder, which has been loaded into a container so as to have a tap density of 2.0 g/cm 3[0048]Considering the flowability and compactibility, the R-Fe-B based alloy powder to be pressed and compacted preferably consists of only the granulated powder prepared as described above. Alternatively, a mixture of the granulated powder and the material powder (i.e., powder of primary particles) may also be used. However, as the percentage of the material powder increases, the flowability decreases. Accordingly, to improve the flowability sufficiently effectively by the granulating technique, the alloy powder preferably consists essentially of the granulated powder alone. Also, when the mixture of the material powder and the granulated powder is used, the surface of the material powder particles is preferably coated with a lubricant. By coating the surface of the primary particles with a lubricant, the flowability of the R-Fe-B based powder can be improved and the oxidation of the R-Fe-B based alloy can be prevented as well. Furthermore, in pressing the powder under a magnetic field, the powder particles can also be aligned more easily. It should be noted that not only a powder consisting essentially of a rare-earth alloy alone (possibly with a surface oxide layer) but also a powder, including a granulating agent and/or a lubricant as well as the rare-earth alloy powder and being subjected to the compaction process, will be referred to herein as \"rare-earth alloy powders\".\n\n[0049]Hereinafter, a method for making a magnet from an R-Fe-B based alloy sintered body according to a preferred embodiment of the present invention will be described step by step.\n\n[0050]First, flakes of an R-Fe-B based alloy are made by a strip casting process (see United States Patent No. 5,383,978, for example). Specifically, an R-Fe-B based alloy, prepared by a known method, is melted by an induction heating process to obtain a molten alloy. The R-Fe-B based alloy may also have the composition disclosed in United States Patent No. 4,770,723 or No. 4,792,368. In a typical composition of the R-Fe-B based rare-earth alloy, Nd or Pr is usually used as R, a portion of Fe may be replaced with a transition element (e.g., Co), and a portion of B may be replaced with C.\n\n[0051]This molten alloy is maintained at 1,350 °C and then rapidly quenched on a single roller under the conditions including a roller peripheral velocity of about 1 m/s, a cooling rate of 500 °C/s and an undercooling of 200 °C, thereby obtaining alloy flakes with a thickness of 0.3 mm. By decrepitating these alloy flakes by a hydrogen absorption process, an alloy coarse powder is obtained. Then, this alloy coarse powder is finely pulverized by a jet mill within a nitrogen gas atmosphere, thereby obtaining an alloy powder (i.e., material powder) with a mean particle size of 1.5 µm to 6 µm and a specific surface area of about 0.45 m 2[0052]Next, remanent magnetization is generated in the material powder obtained in this manner. In this example, an alternating demagnetizing field with a peak magnetic field of 1.0 T is applied thereto by a magnetizer.\n\n[0053]Subsequently, the material powder with remanent magnetization is granulated. The applicant of the present application described a method for granulating a material powder with remanent magnetization by a fluid-bed granulating technique in Japanese Patent Applications No. 2001-362436 and No. 2002-298621. In the preferred embodiment of the present invention, however, a granulated powder can be obtained by a shaking granulating technique more easily than by the method described in the previous applications.\n\n[0054]A method for making a granulated powder according to this preferred embodiment of the present invention includes the steps of: (a) applying an alternating demagnetizing field to a rare-earth iron-boron based alloy powder to obtain said alloy powder with remanent magnetization; (b) feeding the powder onto a track, which is defined by a side surface and a lower surface that is sloped so as to decrease its height toward the side surface; and (c) setting up vibrations on the track to give the powder kinetic energy, thereby transporting the powder along the length of the track and granulating the powder under a substantially zero magnetic field by utilizing an agglomeration force produced by the remanent magnetization of the powder and a tumbling action produced by the kinetic energy. The step (c) preferably further includes the step of transporting the powder along the length of the track while making some particles of the powder, located near the side surface, climb the sloped lower surface.\n\n[0055]This granulating process step will be described with reference to FIGS. 2(a) and 2(b). FIG. 2(a) is plan view of a track 22  as viewed from over it, and FIG. 2(b) is a cross-sectional view thereof as viewed on the plane B-B\'  shown in FIG. 2(a). \n\n[0056]The material powder with remanent magnetization is granulated while being transported along the track 22  from left to right in FIG. 2(a).  As shown in FIG. 2(b),  the track 22  is defined by a side surface 22a  and a sloped lower surface 22b  that decreases its height toward the side surface 22a.  In this preferred embodiment, a configuration in which the track 22  is arranged spirally on the inner surface of a bowl is illustrated as an example as will be described in detail later. The side surface 22a  is located on one side of the track 22  (i.e., on the outer side of the spiral track) while the lower surface 22b  is tilted toward one direction. However, if a linearly extending track is used, for example, its cross-sectional structure may have the structure shown in FIG. 2(b) on the left-hand side, too, so as to be symmetric with respect to the transporting direction (i.e., the direction in which the track extends). Nevertheless, when the track 22  is arranged spirally, a relatively long track 22  can be defined within a rather small area.\n\n[0057]As pointed by the arrows in FIG. 2(b),  the track 22  is shaken both horizontally and vertically. The granulation is done by utilizing the tumbling action produced by the kinetic energy that has been given to the powder by these vibrations and the agglomeration force produced by the remanent magnetization of the powder. The tumbling action is produced mainly by the horizontal vibrations. However, the powder is preferably shaken both horizontally and vertically because the density of the powder can be increased effectively by the vertical vibrations. In addition, the amplitude of the horizontal vibrations also has an effect on the transportation rate. That is to say, the transportation rate can be increased by widening the amplitude of the horizontal vibrations.\n\n[0058]The amplitudes and frequencies of the horizontal and vertical vibrations, as well as the track length,', '技术领域 \n\n [0001] 稀土合金造粒粉的制造方法和装置以及稀土合金烧结体的制造方法技术领域本发明涉及稀土合金造粒粉的制造方法和装置以及稀土合金烧结体的制造方法。 \n\n  背景技术 \n\n [0002] 稀土合金烧结磁体(永磁体)通常是通过将稀土合金粉末压制,烧结所得粉末压块然后对烧结体进行时效处理来制造的。 当前在各种应用中广泛使用的永磁体包括稀土钴基磁体和稀土铁硼基磁体。 其中,稀土-铁-硼基磁体(在本文中称为“ R-Fe-B-基磁体”,其中R是包括Y的稀土元素之一,Fe是铁,并且 B是硼)越来越多地用于各种电子设备中。 这是因为基于R-Fe-B的磁体表现出最大的能量乘积,该能量乘积高于各种其他类型的磁体中的任何一种,但是相对便宜。 \n\n [0003] 基于R-Fe-B的烧结磁体包括主要由四方R 2 Fe 14 B化合物组成的主相,包括Nd的富R相和例如富B相。 在基于R-Fe-B的烧结磁体中,一部分Fe可以被诸如Co或Ni的过渡金属替代,并且一部分硼(B)可以被碳(C)替代。 例如,在美国专利号4,770,723和4,792,368中描述了可有效地应用本发明的R-Fe-B基烧结磁体。 \n\n [0004] 美国专利申请公开公报US 5,116,434公开了一种通过制备具有剩余磁化强度的粉末来生产铁磁材料(例如,Re 2 Fe 14 B 1)的方法,其中所述粉末暴露于非交变的磁化场。 此后,将所述粉末压碎,直接与粘合剂混合并压成颗粒。 \n\n [0005] 此外,在现有技术中,已经通过铸锭法将R-Fe-B基合金制备为用于这种磁体的材料。 通常,在锭铸法中,通过感应加热法使作为起始原料的稀土类金属,电解铁和硼铁合金熔融,然后在铸模中将这样得到的熔体进行比较缓慢的冷却,从而制备铸件。 合金锭。 \n\n [0006] 近来,诸如带材铸造工艺或离心铸造工艺的快速冷却工艺已在本领域引起了很多关注。 在快速冷却过程中,熔融合金与单个冷却辊,双冷却辊,旋转盘或旋转的圆柱形铸模的内表面接触并相对快速地冷却,从而制得凝固的合金 比熔融合金薄的合金锭。 以这种方式制备的固化合金在本文中将被称为“合金薄片”。 通过这种快速冷却过程产生的合金薄片通常具有约0.03mm至约10mm的厚度。 根据快速冷却过程,熔融合金从其已经与冷却辊的表面接触的表面开始固化。 熔融合金的该表面在本文中将被称为“辊接触表面”。 因此,在快速冷却过程中,柱状晶体从辊接触​​表面沿厚度方向生长。 结果,通过带钢铸造工艺或任何其他快速冷却工艺制成的快速凝固的合金具有包括R 2 Fe 14 B结晶相和富R相的结构。  R 2 Fe 14 B结晶相通常具有约0.1μm至约100μm的短轴尺寸和约5μm至约500μm的长轴尺寸。 另一方面,富R相是包括相对较高浓度的稀土元素R并且具有大约10μm或更小的厚度(对应于晶界的宽度)的非磁性相。  R 1分散在R 2 Fe 14 B晶相之间的晶界上。 \n\n [0007] 与通过常规的铸锭法或压铸法制得的合金(这种合金在本文中称为“锭合金”)相比,快速固化的合金在较短的时间内(即以冷却速率)淬火 的10 2 [0008] 在本领域中还已知一种称为“ Ca还原过程(或还原/扩散过程)”的替代合金制备方法。 该过程包括以下加工和制造步骤:将金属钙(Ca)和氯化钙(CaCl)添加到至少一种稀土氧化物,铁粉,纯硼粉以及硼铁硼粉和硼中的至少一种的混合物中 以预定比例的氧化物或包含合金粉末或以预定比例的这些构成元素的混合氧化物的混合物; 在惰性气氛中对所得混合物进行还原/扩散处理; 稀释所获得的反应物以制成浆液; 然后用水处理浆液。 以这种方式,可以获得R-Fe-B基合金的固体。 \n\n [0009] 应当注意,固体合金的任何小块在本文中都将被称为“合金块”。  “合金块”可以是各种形式的固体合金中的任何一种,其不仅包括通过冷却材料合金的熔体而获得的凝固合金(例如,通过常规的铸锭工艺制备的合金铸锭或通过快速铸造法制备的合金薄片)。 冷却工艺(如带钢铸造工艺),也包括通过Ca还原工艺获得的固态合金。 \n\n [0010] 根据现有技术,通过执行以下处理步骤来获得待压实的合金粉末:通过例如氢吸收工艺和/或各种机械研磨工艺中的任何一种将这些形式的合金块粗粉碎( 例如,使用盘磨机); 例如,通过使用喷射式磨机的干磨法将所得的粗粉(平均粒径为10μm至500μm)细粉碎。 \n\n [0011] 被压实的R-Fe-B基合金粉末优选具有1.5μm至约6μm的平均粒径以实现足够的磁性能。 应该注意的是,粉末的“平均粒度”在本文中是指FSSS粒度,除非另有说明。 然而,当使用具有如此小的平均粒径的粉末时,所得的流动性,致密性(包括空腔填充密度和可压缩性)和生产率将变差。 \n\n [0012] 为了克服这个问题,提出了一种用润滑剂涂覆合金粉末颗粒表面的方法。 例如,日本专利申请公开第08-111308号和美国专利第5,666,635号公开了制造R-Fe-B基合金细粉(平均粒径为1.5μm至5μm)的技术。 向平均粒径为10μm至500μm的R-Fe-B基合金粗粉中添加0.02质量%至5.0质量%的润滑剂(包括至少一种液化的脂肪酸酯),然后通过粉碎将混合物粉碎 在惰性气体中的气流粉碎机。 \n\n [0013] 润滑剂不仅改善了粉末的流动性和致密性(或可压缩性),而且还充当了用于增加成型体的硬度(或强度)的粘合剂。 然而,润滑剂也可能作为残留碳保留在烧结体中,从而可能使磁性能劣化。 因此,润滑剂需要表现出良好的粘合剂可除去性。 例如,日本专利申请未审公开No.2000-306753公开了作为优选的具有良好的粘合剂可除去性的润滑剂,解聚的聚合物,解聚的聚合物和烃溶剂的混合物以及解聚的聚合物,低粘度矿物的混合物。 油和碳氢化合物溶剂。 \n\n [0014] 然而,根据该使用润滑剂的方法,虽然可以实现一定程度的改进,但是仍然难以将粉末充分均匀地填充到空腔中或实现足够的致密性。 除其他外,是通过带钢铸造工艺或任何其他快速淬火工艺(冷却速率为10 2 [0015] 作为提高R-Fe-B系合金粉末的流动性和致密性的另一种方法,提出了制造造粒粉末的提议。 \n\n [0016] 例如,日本专利申请公开第63-237402号公开了通过将0.4质量%至4.0质量%的石蜡化合物的混合物(在室温下为液体)获得的颗粒状粉末,可提高压实性。 温度)和脂肪族羧酸盐添加到粉末中,然后将它们一起研成颗粒。 还已知其中使用聚乙烯醇(PVA)作为造粒剂的方法。 应当注意的是,制粒剂以及润滑剂起粘合剂的作用,以增加压坯的强度。 \n\n [0017] 然而,如果使用日本专利申请公开第63-237402号中公开的造粒剂,则粘合剂的去除性太差,以致R-Fe-B基烧结磁体的磁性能将因残留碳而变差。 在烧结体内。 \n\n [0018] 另一方面,通过将喷雾干燥器方法应用于PVA而制得的造粒粉末具有高结合力,因此即使在施加外部磁场的情况下也难以完全破碎。 因此,其一次粒子不能充分地与磁场对准,并且不能获得具有优异磁性的磁体。  PVA还具有不良的粘合剂去除性,并且源自PVA的碳很可能残留在磁体中。 通过在氢气氛中进行粘合剂去除工艺可以克服该问题。 但是,仍然很难充分除去该碳。 \n\n [0019] 为了解决粒状粉末即使在取向磁场下也难以破碎的问题,本申请的申请人提出了一种制备粒状粉末的方法,其中各个粉末颗粒(即,一次颗粒)与磁场对准。 通过将施加于其上的静磁场使原料粉末造粒,将涂覆的涂料与造粒剂偶联在一起(参见日本专利申请公开公报第10-140202号)。 如果使用该造粒粉末,则与使用其中不与施加的磁场对准的一次粒子与造粒剂结合在一起的造粒粉末相比,磁性能提高。 然而,难以使被压制的粉末粒子与磁场充分地对准。 因此,所得到的磁性能低于使用非粒状稀土合金粉末的情况。 \n\n [0020] 到目前为止,已经提出了各种制粒剂和制粒方法。 但是,尚未开发出大量生产具有优异的流动性和致密性并且有助于生产具有良好磁性能的磁体的稀土合金粒状粉末的方法。 \n\n [0021] 另一方面,对更小,更薄和性能增强的磁体的需求正在不断增加。 因此,等待开发用于以高生产率生产小或薄的高性能磁体的方法。 一般而言,如果加工稀土合金烧结体(或通过使烧结体磁化而获得的磁体),则其磁性能将由于由加工过程引起的应变而劣化。 磁性的这种降低在小磁体中是不可忽略的。 因此,要获得的磁体的尺寸越小,就越需要制造具有如此高的尺寸精度以至于几乎不需要加工并且还具有要获得的最终形状的烧结体。 由于这些原因,对具有优异的流动性和致密性的稀土合金粉末(例如,基于R-Fe-B的合金粉末)的需求也在不断增长。 \n\n  发明内容 \n\n [0022] 为了克服上述问题,本发明的主要目的是提供一种稀土合金造粒粉的制造方法,该方法具有良好的流动性和良好的致密性,并且可以制造具有优异的磁性的磁体。 的特性,以及高生产率地制造高质量的稀土合金烧结体的方法。 \n\n [0023] 本发明的稀土-铁-硼系合金造粒粉的制造方法包括权利要求1所限定的步骤。 \n\n [0024] 本申请的优选实施例受从属权利要求的约束。 \n\n [0025] 在一个优选的实施方案中,步骤(c)包括沿轨道的长度输送粉末同时使位于侧面附近的一些粉末颗粒爬下倾斜的下表面的步骤。 \n\n [0026] 在另一个优选的实施方式中,侧面螺旋地布置并且位于轨道的外侧上。 \n\n [0027] 在另一个优选的实施方案中,步骤(b)在粉末已经进行了颗粒定径之后进行。 \n\n [0028] 在另一个优选的实施方案中,粉末的平均粒径为1.5μm至6μm。 \n\n [0029] 在另一个优选的实施方案中,获得平均粒径为0.05mm至3.0mm的造粒粉末。 \n\n [0030] 根据本发明的稀土合金烧结体的制造方法包括权利要求7所限定的步骤。 \n\n [0031] 根据本发明的制粒粉末的设备具有权利要求8所述的特征。 \n\n [0032] 在一个优选实施例中,该设备还包括碗,该碗接收具有剩余磁化的稀土合金粉末,并且轨道螺旋地布置在碗的内表面上。 \n\n [0033] 在另一个优选实施例中,该设备还包括在磁化器和碗之间的粒度筛。 \n\n  附图说明 \n\n [0034]  图。  1(a)  示意性地示出了根据本发明的优选实施方式的粒状粉末的结构,并且  无花果 1(b)和1(c)  为了比较,示意性地示出了常规造粒粉末的结构。  无花果 2(a)和2(b)  图1示出了根据本发明优选实施方案的制粒工艺步骤,其中  图。  2(a)  是轨道的平面图 22  从上面看,以及  图。  2(b)  是从平面上看的横截面图  B-B\'  显示在  图。  2(a) 。  图。  3  示意图说明了制粒机 120  根据本发明的优选实施例。  图。  4  图7是示意性地表示碗的结构的俯视图。 120A  制粒机 120  显示在  图。  3 .  图。  5  是碗的一部分的透视图 120A  制粒机 120  显示在  图。  3 .  图。  6  示意图说明了制粒系统 100  根据本发明的优选实施例。 \n\n  实施本发明的最佳模式 \n\n [0035] 在下文中,将参照附图描述根据本发明的优选实施方式的造粒粉末的制造方法和稀土合金烧结体的制造方法。 在以下对优选实施方式的描述中,本发明的特征将被描述为应用于通过带式铸造工艺制备的R-Fe-B基合金粉末的烧结磁体的制造方法,该方法具有优异的磁性能。 但流动性低。 然而,本发明决不限于那些特定的优选实施例。 因此,也可以替代地使用通过任何其他方法制造的稀土合金粉末。 \n\n [0036] 根据本发明的优选实施方式的制造R-Fe-B基合金烧结体的方法包括以下步骤:制备R-Fe-B基合金粉末(在本文中将其称为“原料粉末”。  ”或“初级粒子粉末”); 在物料粉末中产生剩磁; 利用物料粉末的剩余磁化产生的附聚力将粉末制粒; 通过对R-Fe-B基合金粉末(包括粒状粉末)施加磁场,使其压制成型; 并烧结成型体。 通过用已知方法磁化所得的烧结体,可以获得基于R-Fe-B的烧结磁体。 应当注意,磁化处理步骤可以在烧结处理之后的任意时间点进行。 例如,烧结磁体的使用者可以在他或她使用烧结磁体之前执行磁化过程步骤。 甚至未磁化的磁体在本文中也将被称为“烧结磁体”。 \n\n [0037] 在根据本发明的优选实施方式的R-Fe-B基合金烧结体的制造方法中,通过利用由材料粉末的剩余磁化产生的附聚力使粉末造粒。 因此,可以减少制粒剂的添加量,或者可以使用与传统粘合剂相比具有低粘合力的粘合剂。 此外,甚至可以省略成粒剂本身的添加。 \n\n [0038] 在下文中,将参照本发明的优选实施方式描述造粒粉末的制造方法和所得造粒粉末的特征。  无花果 1(a),1(b)和1(c) .  在左侧  图。  1个 ,  示意性地示出了各个粒状粉末的结构。 在右侧  图。  1个 ,  示意性地示出了各个粒状粉末的状态,为了压实的目的,在腔中已经施加了取向磁场。 进一步来说,  图。  1(a)  说明了颗粒状的粉末 12a  根据本发明的优选实施例,  图。  1(b)  说明了传统的颗粒状粉末 12b  使用了制粒剂的产品,以及  图。  1(c)  说明了颗粒状的粉末 12c  通过以上确定的日本专利申请公开第10-140202号中描述的方法获得的产物。 \n\n [0039] 如图所示  图。  1(a) ,在颗粒状粉末中 12a  在该优选实施例的实施例中,具有剩余磁化强度的初级粒子10a通过磁团聚力弱耦合在一起。 在所示的实例中,假定不使用制粒剂。 这些初级粒子 10a  具有剩余磁化强度的磁耦合在一起以形成磁闭合回路,并且造粒粉末的剩余磁化强度 12a  很小(例如,大于约0 mT且等于或小于约10 mT(millitesla))。 在这种颗粒状的粉末中 12a  ,初级粒子的剩余磁化强度 10a  与粒状粉末不同,是随机取向的 12c  显示在  图。  1(c) .  初级粒子 10a  可以具有约1.5μm至约6.0μm的平均粒径,并且造粒的粉末 12a  颗粒的平均粒度例如可以为约0.05mm至约3.0mm。 剩余磁化强度可通过将高斯计的探针插入粒状粉末中来测量。 \n\n [0040] 这种颗粒状的粉末 12a  具有适度的粒径和适当的形状,并且可以表现出优异的流动性。 另外,这种颗粒状的粉末 12a  它还具有较低的剩余磁化强度,并且可以轻松,均匀地加载到空腔中,而不会引起任何桥接。 此外,这些初级粒子 10a  它们只是通过磁凝聚力耦合在一起。 因此,如左图所示  图。  1(a) ,颗粒状的粉末 12a  可以分解成初级粒子 10a  正好通过向其施加对准磁场(例如,大约0.1 T至大约0.8 T)来实现。 结果,初级粒子 10a  可以与施加的磁场对齐。 另外,由于颗粒状 12a  由于不含粒化剂,因此烧结体中所含的碳量不会增加。 通过将由该造粒粉末制成的烧结体磁化而获得的磁体 12a  具有与完全不使原料粉末造粒(剩余磁化基本为零)而获得的磁体相同的磁性能。 也就是说,通过使用本发明的优选实施方式的造粒粉,可以在不降低磁性能的情况下改善流动性和致密性。 任选地,例如为了增加压块的强度,自然可以添加制粒剂。 由于这种制粒剂仅用作附加剂,因此制粒剂不必表现出强的结合力。 因此,可以选择造粒剂的量和类型,以不损害磁性能。 \n\n [0041] 相反,颗粒状粉末 12b,  通过结合初级粒子而获得 10b  材料粉末与制粒剂的混合 14,  如图所示,即使在对准磁场下也无法充分分解  图。  1(b) .  结果,所得烧结磁体的磁性能劣化。 与完全不使原料粉末造粒的磁体相比,该烧结磁体的剩余磁化强度降低了约  1%  到大约10% 应该注意的是,初级粒子中省略了箭头 10b  粒状粉末 12b  显示在  图。  1(b)  因为颗粒 10b  没有剩磁。 \n\n [0042] 此外,如果是颗粒状的粉末 12c  通过结合和固定一次颗粒而获得 10c  与造粒剂一起 14  排列主要粒子时 10c  如图所示,在静磁场下  图。  1(c) ,则可以将磁性能的下降降至最低,但颗粒状粉末 12c  无法完全分解为初级粒子 10c.  因此,与根本不使原料粉末造粒的磁体相比,所得烧结磁体的剩余磁化强度降低约百分之一至百分之几。 另外,如图所示  图。  1(c) ,  颗粒状的粉末 12c  沿磁极的方向拉长,这在流动性方面是不利的。 此外,由于颗粒状 12c  具有相对较大的剩余磁化强度,粒状粉末 12c  会产生桥接现象,除非将其消磁一次,否则无法装入空腔。 \n\n [0043] 相反,颗粒状粉末 12a  本发明的最佳实施例的磁头几乎是球形的,剩余的磁化强度太小而不能消磁,并且可以容易地和均匀地填充空腔。 因此,可以采用所谓的“测量和加载技术”,其中预先测量预定质量的粒状粉末,然后将其加载到空腔中。 如上所述,造粒粉末 12a  本发明的优选实施方案的第一实施例可以表现出优异的流动性和空腔填充能力,并且可以在基本上不降低磁性能的情况下有助于制造烧结磁体。 \n\n [0044] 通过包括以下步骤的造粒方法获得根据本发明优选实施方案的粒状粉末:对材料粉末的颗粒施加剩余磁化动能,并使颗粒在由给定动能产生的翻滚作用下生长。  。 任选地,如果需要,可以添加制粒剂。 \n\n [0045] 在根据本发明的优选实施方式的粒状粉末的制造方法中,可以在将原料粉末供给到设备底部之前的任意时间点进行在原料粉末中产生剩余磁化的步骤。 制粒粉末的过程。 但是,初级粒子 10a  粒状粉末 12a  该优选实施例的磁头刚好在剩余磁化产生的磁团聚力作用下耦合在一起。 因此,颗粒状的粉末 12a  在施加外部磁场时会被破坏。 因此,允许颗粒在基本为零的磁场下生长。 这与制粒粉末的方法相反 12c  显示在  图。  1(c)  其中需要连续施加磁场以对齐一次粒子 10c  直到粉末状 12  用造粒剂固定 14.  如本文所用,“基本上为零磁场”是指这样的磁场,该磁场足够弱以获得粉末状的粉末,其中通过粉末的剩余磁化形成了磁闭合回路,并且对粉末的剩余磁化没有影响。 粉末,而颗粒由于翻滚作用而生长。 \n\n [0046] 施加以产生剩余磁化的磁场可以是各种磁场中的任何一种。 由于初级粒子的剩磁可能很少,因此使用交变的退磁场。 \n\n [0047] 应当注意的是,即使在产生剩余磁化强度之后,具有低矫顽力的材料粉末也可能失去磁化强度,并且在获得最终的造粒粉末之前,造粒粉末的形状仍然存在。 因此,原料粉末优选具有较高的矫顽力。 具体地,如果材料粉末的矫顽力值已经装载到容器中以具有2.0g / cm 3的振实密度, 通过BH示踪剂测量[0048] 考虑到流动性和致密性,要压制和压制的R-Fe-B基合金粉末优选仅由如上所述制备的粒状粉末组成。 或者,也可以使用粒状粉末和原料粉末(即一次颗粒的粉末)的混合物。 然而,随着原料粉末的百分比增加,流动性降低。 因此,为了通过造粒技术充分有效地改善流动性,合金粉末优选基本上仅由造粒粉末组成。 而且,当使用原料粉末和造粒粉末的混合物时,原料粉末颗粒的表面优选涂覆有润滑剂。 通过用润滑剂涂覆一次颗粒的表面,可以改善R-Fe-B基粉末的流动性,并且还可以防止R-Fe-B基合金的氧化。 此外,在磁场下挤压粉末时,粉末颗粒也可以更容易地取向。 应该注意的是,不仅稀土合金粉末基本上仅由稀土合金构成(可能具有表面氧化物层),而且包括造粒剂和/或润滑剂的粉末以及稀土合金粉末也包括在内。 进行压实处理的合金在本文中称为“稀土合金粉末”。 \n\n [0049] 以下,将逐步描述根据本发明的优选实施方式的由R-Fe-B基合金烧结体制造磁体的方法。 \n\n [0050] 首先,通过带式铸造工艺制造R-Fe-B基合金薄片(例如,参见美国专利号5,383,978)。 具体地,通过感应加热工艺将通过已知方法制备的R-Fe-B基合金熔化以获得熔融合金。  R-Fe-B基合金还可具有美国专利号4,770,723或4,792,368中公开的组成。 在R-Fe-B基稀土合金的典型组成中,通常将Nd或Pr用作R,一部分Fe可以用过渡元素(例如Co)代替,而一部分B可以是过渡元素。 替换为C。 \n\n [0051] 将该熔融合金保持在1350℃,然后在单辊上以大约1m / s的辊圆周速度,500℃/ s的冷却速率和200℃的过冷的条件快速淬火,从而 获得厚度为0.3毫米的合金薄片。 通过氢吸收处理使这些合金薄片破损,从而获得合金粗粉。 然后,将该合金粗粉通过喷射磨在氮气气氛中进行微粉碎,从而获得平均粒径为1.5μm〜6μm,比表面积为约0.45m的合金粉(原料粉)。  2 [0052] 接下来,在以这种方式获得的材料粉末中产生剩磁。 在该示例中,通过磁化器向其施加具有1.0T的峰值磁场的交变消磁场。 \n\n [0053] 随后,将具有剩余磁化的原料粉末造粒。 本申请的申请人在日本专利申请No.2001-362436和No.2002-298621中描述了通过流化床造粒技术将剩余粉末磁化的材料粉末造粒的方法。 然而,在本发明的优选实施方案中,通过振动造粒技术比通过在先申请中描述的方法更容易获得造粒粉末。 \n\n [0054] 根据本发明该优选实施方案的粒状粉末的制造方法包括以下步骤:(a)对稀土铁硼基合金粉末施加交变的去磁场,以获得具有剩余磁化的所述合金粉末;  (b)将粉末供给到轨道上,该轨道由侧面和下表面限定,该下表面倾斜以减小其向侧面的高度;  (c)在轨道上产生振动以提供粉末动能,从而沿轨道的长度输送粉末,并利用由粉末的剩余磁化产生的团聚力在基本上零磁场下将粉末制粒。 以及动能产生的翻滚作用。 步骤(c)优选地还包括以下步骤:沿着轨道的长度输送粉末,同时使位于侧面附近的一些粉末颗粒爬下倾斜的下表面。 \n\n [0055] 将参考以下内容描述该制粒工艺步骤。  无花果 2(a)和2(b)。 图。  2(a)  是轨道的平面图 22  从上面看,以及  图。  2(b)  是从平面上看的横截面图  B-B\'  显示在  图。  2(a) . \n\n [0056] 具有剩余磁化强度的物料粉末在沿轨道运输时被制粒 22  从左到右  图。  2(a) .  如图所示  图。  2(b) ,  轨道 22  由侧面定义 22a  和倾斜的下表面 22b  朝向侧面降低高度 22a.  在该优选实施例中,轨道的配置 22  螺旋状地布置在碗的内表面上的“槽”作为示例被示出,如稍后将详细描述的。 侧面 22a  位于轨道的一侧 22  (即在螺旋轨道的外侧),而下表面 22b  向一个方向倾斜。 然而,例如,如果使用线性延伸的轨道,则其横截面结构可以具有如图1所示的结构。  图。  2(b) 在左侧,也相对于输送方向(即轨道延伸的方向)对称。 不过,当轨道 22  呈螺旋状排列,轨迹较长 22  可以在相当小的区域内定义。 \n\n [0057] 如箭头所示  图。  2(b) ,  轨道 22  水平和垂直摇动。 通过利用由这些振动赋予粉末的动能产生的翻滚作用以及粉末的剩余磁化产生的团聚力来完成制粒。 翻滚作用主要由水平振动产生。 然而,粉末最好水平和垂直摇动,因为可以通过垂直振动有效地增加粉末的密度。 另外,水平振动的幅度也影响运输速度。 也就是说,可以通过扩大水平振动的幅度来提高输送速度。 \n\n [0058] 水平和垂直振动的幅度和频率,以及轨道长度,都应适当考虑制粒效率和运输速度来定义。 从造粒效率的观点出发,垂直振动的振幅优选为至少0.2mm,更优选为0.3mm以上。 考虑到输送速度,水平振动的振幅优选为至少0.5mm,更优选为1.0mm以上。 但是,如果振幅超过2.0mm,则不能获得足够的造粒效果,并且流动性可能不会增加到预期的程度。 水平和垂直振动的频率可以落在70Hz至80Hz的范围内,但是没有特别限制。 水平振动和垂直振动之间的相位关系被适当地限定,并且可以被限定以便实现椭圆振动。 \n\n [0059] 轨道长度优选不小于4,000mm。 然而,如果使用具有短轨道长度的设备,则通过多次执行制粒处理步骤,可以获得与通过延长轨道长度而获得的效果基本相同的效果。 轨道长度对造粒粉末的粒度和形状有影响。 具体地,如果轨道长度太短,则不能获得足够大的造粒粉末,造粒粉末的形状可能不够规则,和/或足够大的造粒粉末颗粒的百分比可能很低。 \n\n [0060] 在振动的轨道上 22,  相对较小的颗粒状粉末 1a  聚集到倾斜的下表面的较高层部分 22b,  而较大的颗粒状粉末 1b  朝向倾斜的下表面的下层部分聚集 22b  (即靠近侧面 22a).  如果粒状粉末根据其尺寸以这种方式不均匀地分布,则粒化效率将降低。 因此,通过提供引导表面 22c,  从侧面延伸 22a  朝向轨道的中心 22  如图所示,并沿传送方向倾斜  图。  2(a) ,  较大的粉状颗粒 1b,  朝侧面聚集 22a  轨道的 22,  可以向上移动(即朝下表面的较高部分 22b)  靠下表面的倾斜 22b.  然后,比较大的粉状颗粒 1b  和相对较小的颗粒状粉末 1a  将它们混合在一起,从而高效地制粒。 导向面 22c  优选地,相对于运输方向限定30度至60度的倾斜角(即,由相对于引导表面的法线限定的角度)。 22c  相对于输送方向的角度优选为120度至150度。 如本文所使用的,“传输方向”是指轨道的长度方向或如果轨道正在缠绕则轨道的切线方向。 原因如下。 具体来说,如果导向面的倾斜角度 22c 如果小于30度,则造粒效果将不足以增加小粒化粉末颗粒的百分比,并且粒径变化显着。 但是,如果倾斜角度超过60度,则会降低运输效率,这是不希望的情况。 \n\n [0061] 相邻引导面之间的间隔 22c  根据轨道的宽度和长度来适当定义 22  和运输速度(即振动条件的组合)。 相邻引导面之间的间隔 22c  可以定义为约80毫米或更大。 这是因为如果间隔小于约80mm,则造粒效果将降低,这是不利的。 然而,如果间隔超过约200mm,则由引导表面产生的造粒效果将下降,这也是不利的。 \n\n [0062] 接下来,一种设备 120  将参考图1描述根据本发明的优选实施方式的用于制造粒状粉末(在本文中称为“制粒机”)的方法。  无花果 3至5 . \n\n [0063] 如图所示  图。  3 ,  制粒机 120  包括一个碗 120A  和一个摇床 120B.  摇床 120B  可以与已知的碗振动部件给料机(例如,由Shinko Electric Co.,Ltd。生产)基本相同。 因此,振动筛配置的描述 120B  (例如,参见日本专利申请公开第2001-114412号)。 相反,碗的结构 120A  将在下面描述。 \n\n [0064]  图。  4  示意性地说明了碗的配置 120A  从上面看,以及  图。  5  是碗的一部分的透视图 120A. \n\n [0065] 在碗的内表面 120A,  轨道 122,  由侧面定义 122a  和倾斜的下表面 122b  朝向侧面降低高度 122a,  呈螺旋状排列。 另外,从侧面延伸的导向面 122a  朝向轨道的中心 122  并且在运输方向上倾斜(即对应于导向面) 22c  显示在  图。  2 ),  由凸部的侧面限定 122d.  应该注意的是,每个凸部 122d  不仅包括沿传送方向倾斜并且用作引导表面的表面(即,引导表面 22c  显示在  图。  2 )  表面朝相反方向倾斜。 由于存在沿相反方向倾斜的表面,因此可以防止粉末被收集在引导表面的后面,从而提高了运输效率。 自然地,带有导向面的挡板 22c  如所示  图。  2  可以代替凸部使用 122d. \n\n [0066] 同时,挡板 122c,  从轨道内侧延伸 122  (即下表面的上层部分 122b)  朝向轨道的中心 122  并且还设置有沿传送方向倾斜的方向。 这些挡板 122c  以便推动已经由凸部的引导表面移动的粒状粉末 122d  向上抵靠下表面的坡度 122b,  回到侧面 122a  (即朝向下表面的下层部分 122b)  再次。 通过提供这些挡板 122c,  可以提高造粒效果,可以更有效地冲洗造粒粉。 挡板 122c  优选为螺旋轨道的内部设置 122.  在如图所示的布置中  图。  4 ,  挡板 122c  仅提供了大约3轮赛道的1.5个内轮 122. \n\n [0067] 这个碗 120A  整体上呈灰浆形状,稀土合金粉末被送入底部 124  在碗的中心 120A.  锥形突起 125  位于底部中央 124  其圆形底部被脊状小突起包围 126,  沿圆形底部的切线方向延伸,从而将送入的粉末供应到轨道上 122  在内表面上有效。 为了提高造粒效率,优选在将原料粉末进料到碗中之前对其进行颗粒筛分。 120A. \n\n [0068] 已送入碗中的粉末 120A  如已经参考  图。  2 ,  在攀爬研钵的内表面时 120A  从其底部开始并沿着螺旋轨道 122,  然后运到出口 128  在碗的顶部 120A.  出水口 128  可以将其连接到供料器(未示出)以用于下一压实工艺步骤。 \n\n [0069] 在这种情况下,如果剩磁的粉末与轨道表面之间的接触电阻(摩擦电阻) 122  (即侧面 122a  和下表面 122b)  或挡板的表面 122c  和凸部 122d  如果过高,那么粉末将粘附在那些表面上,从而可能降低造粒效率。 因此,与粉末接触的那些表面优选是光滑的。 因此,碗 120A  优选地,其由诸如镜面抛光的SUS的不锈钢制成,并且其表面优选地进一步涂覆有氨基甲酸酯。 此外,如果将造粒剂添加到粉末中,则粉末将粘附在碗的表面上 120A  容易。 因此,在许多情况下宁愿不使用制粒剂。 应当注意,即使在没有剩余磁化的情况下将造粒剂添加到粉末中,也难以通过该方法获得造粒的粉末。 \n\n [0070] 制粒机的典型规格 120  优选实施例的特征可以如下: \n\n  垂直振动:振幅为0.3毫米水平振动:振幅为1.5毫米底部 124  碗的直径:350毫米的直径与水平面的倾斜角度:底部8度,在轨道上10度  125:  底部直径100毫米高度50毫米轨道  122:  宽度35毫米,侧面高度30毫米,总长度4,000毫米最外面的轨道直径:560毫米挡板  122c:  侧面相对于运输方向的夹角为45度,侧面长度为22 mm凸部  122d:  侧面相对于运输方向的夹角为45度,侧面长度为30 mm \n\n [0071] 根据本发明的制粒方法,不需要控制粉末周围的气体的压力,因此,制粒处理步骤可以在大气压下进行。 但是,由于稀土类合金粉末易于氧化,因此优选在惰性气体(例如氮气或稀有气体)气氛中进行造粒处理。 例如,整体制粒机 120  可能会被充满氮气的防护罩所覆盖。 防护罩不必具有气密结构,但是例如可以用氮气进行通风。 \n\n [0072] 由上述稀土合金粉末制成的颗粒状粉末(平均粒径为1.5μm至6μm)优选具有0.05mm至3.0mm的平均粒径。 一般而言,粒状粉末中包含的初级颗粒很少,并且其中包含的三次或更高级颗粒的数量也非常小。 因此,可以认为次级颗粒的平均粒径基本上代表了造粒粉末的平均粒径。 在该优选实施方式中,将通过用显微镜观察粉末得到的二次颗粒的平均粒径用作造粒粉末的平均粒径。 如果造粒粉末的平均粒径小于0.05mm,则不能显着改善流动性,并且将难以获得具有足够密度的均匀压块。 但是,如果造粒粉末的平均粒径超过3mm,则空腔填充密度将降低,并且也将难以获得具有足够密度的均匀压块。 更优选地,造粒粉末的平均粒径在0.1mm至1.5mm的范围内。 通过使用制粒机 120  如本文所示,可以有效地获得平均粒径在0.1mm至1.5mm范围内的粒状粉末。 \n\n [0073] 接下来,进行压制和压实所得造粒粉末的工艺步骤。 在描述它之前,制粒机的另一个优点 120  将进行描述。 与常规流化床制粒机不同,该制粒机 120  可以简化和/或自动化用于烧结磁体的稀土合金压块的生产线。 也就是说,造粒系统 100,  包括制粒机 120  如上所述,可以如图所示示意地制造  图。  6 . \n\n [0074] 在制粒系统中 100,  制粒机 120  以上所述以及用于对制粒机进行预处理的许多机器 120  垂直连接在一起。 更具体地说,在这种制粒系统中 100,  一个漏斗 130  接收物料粉末,一米(秤) 140,  充磁机 150,  和粒度仪 160  与耦合管连接在一起。 \n\n [0075] 将稀土合金材料粉末送入料斗 130,  由仪表测量 140  达到预定质量,然后提供给充磁器的容器(具有预定质量) 150.  充磁机 150  包括磁路(未示出)。 当预定的脉冲电流提供给线圈时,磁化器 150  产生交替的消磁场,从而对容器中的物料粉末施加剩磁。 \n\n [0076] 具有剩余磁化强度的粉末通过粒度仪进行粒度筛分 160  以便由预定大小的块组成,然后将其提供给碗 120A  制粒机 120.  粒度仪 160  可以被实现为具有0.5mm至1.5mm的孔径尺寸的(线的)网。 粉末已由粒度仪分选为预定大小的块 160  然后喂入制粒机 120,  用那些用作核的嵌段造粒。 因此,将限制所得粒状粉末的粒径范围,并且不会产生异常大的粒状粉末颗粒。 网孔的孔径可以根据造粒粉末的目标粒径适当地确定。 然而,在该优选实施方案中,由于利用了由剩余磁化强度产生的附聚力,因此所得粒状粉末的粒径受到剩余磁化强度的限制。 因此,一旦孔尺寸落在该范围之外,颗粒尺寸的影响将减小。 特别是如果孔径小于0.5mm,则这些块难以作为造粒核发挥作用,因此造粒效率降低。 \n\n [0077] 可选地,例如,网状物可以像风箱一样折叠。 通过折叠网孔,可以更有效地进行粉末分选处理。 为了进一步提高粉末分选处理的效率,例如,可以通过将筛网连接至振动机构来使筛网振动。 \n\n [0078] 粒状粉末通过出口冲洗 128  (看到  图。  4 )  制粒机 120.  如果将这种粒状粉末通过进料器例如供应到进料箱以用于下一压实工艺步骤,则制造过程可以从原料粉末进料工艺步骤到压制/压实工艺步骤完全自动化。 \n\n [0079] 接下来,将所得粒状粉末压制并压实,从而制成压粉。 在该优选实施例中,压块仅由粒状粉末制成。 该压制/压实处理步骤可以用已知的压制机进行。 通常,使用单轴压制机,该压制机用于通过上下冲头将粉末压入模腔(也称为“模孔”)中。 \n\n [0080] 然后,用粒状粉末填充单轴压制机的模腔。 可以通过使用筛子的填充方法或使用供料箱的填充方法来执行用粒状粉末填充空腔的这一处理步骤,如日本专利公报第59-40560号所公开的。 公开号10-58198,日本实用新型申请公开号63-110521和日本专利申请公开号2000-248301。 这两种方法有时统称为“删除方法”。 \n\n [0081] 特别地,在制造小的压块时,优选用空腔将造粒的粉末测量为与空腔的内部体积相对应的量。 例如,可以将在底部具有开口的给料箱移动到空腔上方,以使粒状粉末由于其自身的重力(即,本身)而下落,然后将过量的粒状粉末装入空腔中。 切成薄片。 以这种方式,可以相对均匀地装载预定量的粒状粉末。 自然地,例如可以使用漏斗用单独测量的粒状粉末填充空腔。 \n\n [0082] 在型腔中充满颗粒状粉末后,降低单轴压力机的上冲头。 在以这种方式关闭空腔的情况下,将对准磁场施加到粉末上,从而将造粒的粉末分解成初级颗粒,并且还将这些初级颗粒与施加的磁场对准。 本发明的优选实施方案的粒状粉末可以如预期的那样通过施加0.1T至0.8T的相对弱的磁场而分解成初级颗粒。然而,为了获得足够的磁取向度,磁 施加的磁场优选具有约0.5T至约1.5T的强度。例如,磁场方向可以垂直于按压方向。 在以这种方式施加磁场的同时,将粉末以例如98MPa的压力单轴地压在上下冲头之间。 结果,可获得具有0.5至0.6的相对密度(即,压实密度与真实密度的比)的压实体。 如有必要,磁场方向可以平行于按压方向。 通过本发明的方法获得的粒状粉末具有足够的强度,即太强而不能在填充过程步骤中破碎,但是足够弱以至于在施加取向磁场的情况下破碎成初级颗粒。 \n\n [0083] 接下来,在真空或惰性气体气氛中,将所得压块在约1,000℃至约1,180℃的温度下烧结约1至6小时。 该优选实施方案的粒状粉末要么根本不包含粒化剂,要么仅包含少量的粒化剂(如果有的话),该粒化剂足够小以至于可以通过烧结过程基本消除。 因此,不需要单独提供任何粘合剂去除工艺。 应当注意,典型的常规粘合剂去除工艺是在惰性气体气氛中,在约2Pa的压力下,在约200℃至约800℃的温度下进行约3至6小时。 \n\n [0084] 随后,通过在约450℃至约800℃的温度下对所得的烧结体进行时效处理约一小时至八小时,可以获得R-Fe-B基烧结磁体。 此后,磁体在任意阶段被磁化,从而完成基于R-Fe-B的烧结磁体。 \n\n [0085] 根据本发明,如上所述使用具有优异的流动性和致密性的粒状粉末。 因此,可以用减小了填充密度的变化的这种粒状粉末均匀地填充空腔。 因此,通过压实过程获得的压坯具有减小的质量或尺寸变化。 此外,这些压粉很少破裂或碎裂。 \n\n [0086] 另外,该优选实施方案的造粒粉末的一次颗粒基本上由于剩余磁化产生的磁团聚力而刚好耦合在一起。 因此,通过向其施加取向磁场,可以按预期将粉末分解成初级颗粒。 因此,初级粒子的磁取向度不会降低。 此外,如果使造粒剂的碳原子残留在烧结体中,则磁特性的劣化也可以被最小化。 因此,可以获得具有优异磁性的烧结磁体。 因此,根据本发明,可以以高生产率制造高质量的R-Fe-B基合金烧结磁体。 \n\n  例子 \n\n [0087] 在下文中,将描述本发明的具体示例。 \n\n [0088] 以以下方式制备R-Fe-B基合金粉末。 通过使用硼铁合金来制备熔融合金,铁合金包括分别为99.9%和19.8质量%的B的电解铁以及纯度为99.7%以上的Nd和Dy作为起始原料。 具有以下组成的R-Fe-B基合金薄片:其余为34.0质量%的Nd,1.0质量%的Dy,1.0质量%的B和Fe,以及另一种R-Fe-B基合金的薄片, 作为实施例No.1和No.2,通过流延铸造法分别得到了具有30.0质量%的Nd,5.0质量%的Dy,1.0质量%的B和Fe作为余量的组成的合金,作为实施例1和2。 通过在惰性气体(例如,气体压力为58.8MPa的N 2气体)中使用喷射磨将这些合金薄片微细粉碎,从而制成平均粒径为3μm的原料粉末。 代表实施例1和2的粉末的矫顽力分别为60kA / m和120kA / m。 \n\n [0089] 接下来,通过在其上施加交变去磁场(峰值磁场为1.0T),在这些具体实例的材料粉末中产生剩磁。 此后,通过使用上述造粒机120获得平均粒径为0.3mm的造粒粉末,而没有添加任何造粒剂。 这样得到的每种造粒粉末的剩余磁化强度约为0.2mT。 在下表1中示出了各个造粒粉末的测得的静止角。通过对流造粒技术制备了另一种造粒粉末作为对比例1,其中在实施例1的原料粉末和2中没有产生剩余的磁化强度。 质量%的异链烷烃用作造粒剂。 下表1中还示出了该造粒粉末的静止角以及实施例1的原料粉末本身的静止角。 \n\n  表格1 \n\n \n\n \n\n \n\n \n\n \n\n     粉末压制 颗粒状? 剩磁 制粒剂 静止角度  例子1 是 是 未添加 42度  例子2 是 是 未添加 41度  比较 例如 1个 是 没有 添加 44度  比较 例如 2 没有 没有 未添加 约52度  \n\n [0090] 静止角大的粉末的流动性差。 因此,静止角越小,流动性越高。 在比较例2中,除非将原料粉末造粒,否则静止角大约为52度,并且流动性差。 相反,在其中将粉末造粒的实施例1和2以及比较例1中,静置角减小到小于45度。 其中,代表实施例1和2的粒状粉末具有比代表比较例1的压制粉末更小的静止角并显示出更好的流动性。也就是说,可以看出,通过利用剩余的粉末 磁化时,即使不使用任何造粒剂也可以改善流动性。 \n\n [0091] 表1中所示的每种待压制粉末通过如上所述的使用进料箱的方法被装入长度为20mm,宽度为15mm,深度为10mm的腔中,然后单轴压制并压实 (在98 MPa的压力下,垂直于挤压方向施加1.3 T的对准磁场)。 对于本发明的所有实施例和比较例,这些加载和压实工艺步骤均在相同条件下进行。 应当注意,在改变压制条件的情况下获得具有各种压坯密度(即生坯密度)的压坯。 \n\n [0092] 在Ar气氛中在1,060℃下将每个所得压块烧结约四小时,然后在500℃下进行时效处理一小时,从而获得烧结体。 之后,将该烧结体进一步以2,387kA / m磁化以获得烧结磁体。 对于本发明的每个实施例和比较例,获得了50个样品。 下表2中示出了所得烧结磁体的剩磁B r(T)。 \n\n  表2 \n\n \n\n \n\n \n\n \n\n \n\n     溴(T)  例子11.36  例子21.27  比较例11.33  比较例21.36  \n\n [0093] 从表2中可以看出,实施例1的Br和比较例2的Br之间基本上没有区别。因此,烧结磁体表现出优异的磁性能。 添加了造粒剂的比较例1的Br比实施例1或比较例2的Br低。这是因为造粒剂作为碳残留在烧结磁铁中。 \n\n [0094] 如上所述,通过利用一次粒子的剩余磁化产生的磁凝聚力来制造造粒粉,即使不使用造粒剂,与传统的造粒粉相比,也至少获得相同程度的流动性。 加入制粒剂。 因此,与常规磁体相比,可以以至少相似的生产率来生产表现出更好的磁性能的烧结磁体。 此外,如果仅通过利用一次粒子的剩余磁化来制造造粒粉末,则可以基本上消除磁性能的劣化。 \n\n  工业适用性  \n\n [0095] 本发明提供了一种稀土合金造粒粉的制造方法,该方法具有良好的流动性和良好的致密性,并且使得可以制造具有优异的磁性的磁体。 本发明提供一种通过使用这种造粒粉末来高生产率地制造高质量的稀土合金烧结体的方法。 \n\n [0096] 根据本发明,可以在不降低磁性能的情况下改善稀土合金粉末的流动性和致密性。 因此,即使在现有技术中,其形状过于复杂而难以压制和压缩,并且在一定程度上已经牺牲了其磁性能的烧结磁体,也可以具有改善的磁性能。 另外,可以缩短制粒时间并且可以省略粘合剂去除过程。 结果,可以提高稀土类烧结磁体的生产率。');
INSERT INTO `os_patent_instruction_text` VALUES (13026, 22855, '【技術分野】\n\n【0001】\n\n本発明は、磁気特性に優れた耐酸化性HDDR磁石粉末の新規な製造方法に関する。\n\n【背景技術】\n\n【0002】\n\nNd-Fe-B系磁石粉末に代表されるR-Fe-B系磁石粉末(R:Yを含む希土類元素)などの希土類系磁石粉末を、バインダとして熱可塑性樹脂や熱硬化性樹脂などを用いて所定形状に加熱成形することで製造される希土類系ボンド磁石は、樹脂バインダを含有しているために希土類系焼結磁石に比較すれば磁気特性が低くなるものの、フェライト磁石などに比べればなお十分に高い磁気特性を有しており、また、複雑形状や薄肉形状の磁石やラジアル異方性磁石を容易に得ることができるといった希土類系焼結磁石にはない特徴を持っている。従って、希土類系ボンド磁石は、特にスピンドルモータやステッピングモータなどの小型モータに多く用いられ、近年、その需要が増加している。\n\n中でも、所定の組成を有する希土類系磁石合金を水素中で加熱して水素を吸蔵させた後、脱水素処理し、次いで冷却してから粉砕することによって得られる、磁気的異方性を有するHDDR(Hydrogenation-Disproportionation-Desorption-Recombination)磁石粉末(例えば特許文献1や特許文献2を参照)を用いて所定形状に加熱成形したボンド磁石は、磁気特性に優れることから、これまで磁気的等方性希土類系ボンド磁石などが用いられていた製品への応用展開に注目が高まっている。\n\nしかしながら、HDDR磁石粉末は、その組成の大半をRやFeが占めるので、酸化による磁気特性の低下が顕著な磁石粉末であり、HDDR磁石粉末と樹脂バインダを混練してボンド磁石用コンパウンドを調製し、調製されたコンパウンドを用いて磁界中で配向させながら射出成形などにより所定形状に加熱成形してボンド磁石を製造した場合、コンパウンド調製時や加熱成形時の高温環境下(通常150℃以上であり場合によっては250℃を超えることもある)において、HDDR磁石粉末が酸化することで高い磁気特性を有するボンド磁石が得られない場合がある。従って、コンパウンド調製や加熱成形は、より低温で行うことが望ましいが、自動車部品に用いられる射出成形ボンド磁石などは、使用時に120℃以上の高温に曝されることもあるため、ポリフェニレンサルファイド(PPS)樹脂などの高融点樹脂が樹脂バインダとして採用されることから、コンパウンド調製や加熱成形を250℃以上、典型的には300℃以上で行う必要がある。よって、これらの工程を低温で行うことには限界があるので、高温環境下においてもHDDR磁石粉末が\n\n酸化しない方法を開発しなければならない状況にある。また、自動車部品に用いられるボンド磁石は、使用時の高温による磁気特性の低下や、高温で長時間使用した際の磁束の低下が問題になる。これらの問題を解決する方法として、磁石の保磁力そのものを大きくする方法、即ち、温度上昇による保磁力の低下分を予め見込んでおいて、室温での保磁力を大きくする方法が一般的に採用されているが、高い保磁力と高い残留磁束密度を両立させることは困難である。\n\n【0003】\n\n以上のような問題を解決する方法としては、下記の特許文献3にて提案されているような、蒸着、スパッタリング、めっきなどにより、磁気的異方性を有するR-Fe-B系磁石粉末の表面に金属被膜を形成し、金属被膜で表面被覆された磁石粉末を用いてボンド磁石を製造する方法がある。この特許文献3には、この方法の効果として磁石粉末の耐酸化性の向上が記載されており、また、磁石粉末の表面に金属被膜を形成した後、300℃〜1000℃の範囲で熱処理を行うことで、磁石粉末と金属被膜との密着性の向上を図ることができるとともに、被膜を構成する金属の磁石粉末の粒子内部への拡散による磁気特性の向上を図ることができるとされ、その実施例1では、磁石粉末の表面に蒸着によりアルミニウム被膜を形成し、次いで900℃で1時間と600℃で1時間の2段熱処理を行っている。\n\nアルミニウム蒸着被膜は、耐酸化性や量産性に優れていることに加え、部品組み込み時に必要とされる接着剤との接着信頼性に優れている(接着剤が本質的に有する破壊強度に達するまでに被膜と接着剤との間で剥離が生じにくい)ので、磁石成形体に対する耐酸化性被膜として利用価値が高いものであるが、強い磁石粉末と樹脂バインダとの界面強度が要求されるHDDR磁石粉末を用いたボンド磁石における磁石粉末に対しても適用することができることから、特許文献3に記載された方法は注目に値するものである。\n\nしかしながら、平均結晶粒径が通常1μm以下の微細な結晶粒を有するHDDR磁石粉末に対してこの特許文献3に記載された方法に従ってその表面にアルミニウム被膜を形成し、900℃や600℃という高温での熱処理を行うと、磁石粉末の微細な結晶粒が粗大化することで磁気特性が低下するという問題がある。また、このような問題とともに、アルミニウム被膜が軟化や溶融することで磁石粉末の凝集が起こるという問題がある。HDDR磁石粉末のような磁気的異方性希土類系磁石粉末が凝集した場合、凝集体に含まれる磁石粉末の容易磁化方向はランダムであるので、このような凝集体と樹脂バインダを混練してボンド磁石用コンパウンドを調製し、調製されたコンパウンドを用いて磁界中で配向させながら射出成形などにより所定形状に加熱成形してボンド磁石としても、磁石粉末の容易磁化方向を磁界方向に十分に配向させることができないことで、高い磁気特性(特に減磁曲線の角型性)が得られない。また、磁石粉末と樹脂バインダを十分に混練できないことで、ボンド磁石として十分な成形性や機械的強度が得られない。もちろん、凝集体を解砕してもよいが、このような処理を行うと、磁石粉末の表面からのアルミニウム被膜の剥離が多少なりとも起こるので、ボンド磁石中における磁石粉末の酸化を防止するという本来的な目的を達することができなくなるという問題がある。また、アルミニウム被膜で表面被覆されたHDDR磁石粉末に対して900℃や600℃という高温での熱処理を行った場合、磁石粉末の粒子内部へのアルミニウムの拡散が必要以上に起こることで磁気特性の低下を招くという問題がある。HDDR磁石粉末は平均結晶粒径が通常1μm以下の微細な結晶粒を有するので、その主相であるNd2Fe14B相にアルミニウムが置換して固溶した場合の影響は非常に大きなものとなる。このような現象が起きると、磁化やキュリー点の低下などといった問題を引き起こすが、キュリー点の低下は磁石の耐熱性に悪影響を及ぼすので、自動車部品への使用が困難になる恐れがある。\n\n以上のような問題は、特許文献3に記載の磁石粉末においても考えられるが、ここに記載の磁石粉末は、焼結磁石を粉砕して得られるものであり、平均結晶粒径は5μm以上であることが通常であることから、HDDR磁石粉末とは形状や特性が全く異なるので、以上のような問題による影響はさほど深刻なものではなく、900℃や600℃という高温で熱処理を行うことで主相の一部にアルミニウムが置換しても、その影響はHDDR磁石\n\n粉末と比較して遥かに小さいものである。しかしながら、以上のような問題は、HDDR磁石粉末にとっては致命的なものであるので、特許文献3に記載された方法は、HDDR磁石粉末には適用し得ないものである。\n\n【0004】\n\nまた、下記の特許文献4には、異方性希土類磁石粉末の表面に希土類元素であるネオジム、ジスプロシウム、テルビウム、プラセオジムのコーティング層を設けることで、保磁力の温度係数を改善することができることが記載されているが、希土類元素のコーティング層自体が耐食性や耐酸化性に劣るという問題がある。\n\n【特許文献1】特公平6-82575号公報\n\n【特許文献2】特公平7-68561号公報\n\n【特許文献3】特開平3-217003号公報\n\n【特許文献4】特開2000-96102号公報\n\n【発明の開示】\n\n【発明が解決しようとする課題】\n\n【0005】\n\nそこで本発明は、磁気特性に優れた耐酸化性HDDR磁石粉末の新規な製造方法を提供することを目的とする。\n\n【課題を解決するための手段】\n\n【0006】\n\n本発明者は上記の点に鑑みて種々の検討を行った結果、HDDR磁石粉末をアルミニウム被膜で表面被覆した後、450℃〜600℃で熱処理を行うことにより、磁気特性に優れた耐酸化性HDDR磁石粉末を製造することができることを知見した。\n\n【0007】\n\n上記の知見に基づいてなされた本発明の磁気特性に優れた耐酸化性HDDR磁石粉末の製造方法は、請求項1記載の通り、HDDR磁石粉末をアルミニウム被膜で表面被覆した後、450℃〜600℃で、熱処理を行うことによるキュリー点の低下が熱処理前に比較して10℃以内として、熱処理を行うことを特徴とする。\n\nまた、請求項2記載の製造方法は、請求項1記載の製造方法において、アルミニウム被膜の膜厚を0.05μm〜2μmとすることを特徴とする。\n\nまた、請求項3記載の製造方法は、請求項1または2記載の製造方法において、アルミニウム被膜の体積比率を3%以下とすることを特徴とする。\n\nまた、請求項4記載の製造方法は、請求項1乃至3のいずれかに記載の製造方法において、HDDR磁石粉末の表面へのアルミニウム被膜の形成を物理蒸着法で行うことを特徴とする。\n\nまた、請求項5記載の製造方法は、請求項4記載の製造方法において、真空処理室の内部にて、二重圧力勾配型直交磁場放電により発生させた放電プラズマ流を、溶融蒸発部に収容したアルミニウム被膜の形成源に照射することでアルミニウムを加熱蒸発させてイオン化し、イオンプレーティングを行うことにより、振動および/または攪拌させたHDDR磁石粉末の表面にアルミニウム被膜を形成することを特徴とする。\n\nまた、請求項6記載の製造方法は、請求項5記載の製造方法において、イオンプレーティングを行う際の真空処理室の内部のバックグラウンド真空度を1×10-3Pa以下とすることを特徴とする。\n\n  また、本発明のボンド磁石用コンパウンドの製造方法は、請求項7記載の通り、アルミニウム被膜で表面被覆した後、450℃〜600℃で、熱処理を行うことによるキュリー点の低下が熱処理前に比較して10℃以内として、熱処理を行ったHDDR磁石粉末と、樹脂バインダを混練することを特徴とする。\n\nまた、請求項8記載の製造方法は、請求項7記載の製造方法において、樹脂バインダが熱可塑性樹脂であることを特徴とする。\n\n  また、本発明のボンド磁石の製造方法は、請求項9記載の通り、アルミニウム被膜で表面被覆した後、450℃〜600℃で、熱処理を行うことによるキュリー点の低下が熱処\n\n理前に比較して10℃以内として、熱処理を行ったHDDR磁石粉末と、樹脂バインダを混練することで得たボンド磁石用コンパウンドを用いて磁界中で配向させながら所定形状に加熱成形することを特徴とする。\n\nまた、請求項10記載の製造方法は、請求項9記載の製造方法において、所定形状への加熱成形を射出成形、圧縮成形、押出成形、ロール成形から選ばれるいずれか一つの方法で行うことを特徴とする。\n\n【発明の効果】\n\n【0008】\n\n本発明によれば、磁気特性に優れた耐酸化性HDDR磁石粉末の製造方法が提供される。\n\n【発明を実施するための最良の形態】\n\n【0009】\n\n本発明の磁気特性に優れた耐酸化性HDDR磁石粉末の製造方法は、HDDR磁石粉末をアルミニウム被膜で表面被覆した後、450℃〜600℃で熱処理を行うことを特徴とするものである。\n\n【0010】\n\n本発明において、HDDR磁石粉末をアルミニウム被膜で表面被覆する工程は、HDDR磁石粉末の表面にアルミニウム被膜を形成することができる方法であればどのような方法で行ってもよいが、被膜形成時における磁石粉末の磁気特性の低下が少ないこと、真空中において粉末表面の吸着水分などを除去してから被膜を形成することでその後に行う熱処理による酸化の問題が少ないことなどに鑑みれば、真空蒸着法やイオンプレーティング法やスパッタリング法などの物理蒸着法で行うことが望ましい。とりわけ、例えば、真空処理室の内部にて、二重圧力勾配型直交磁場放電により発生させた放電プラズマ流を、溶融蒸発部に収容したアルミニウム被膜の形成源に照射することでアルミニウムを加熱蒸発させてイオン化し、イオンプレーティングを行うことにより、振動および/または攪拌させたHDDR磁石粉末の表面にアルミニウム被膜を形成する方法を好適に採用することができる。\n\n【0011】\n\n二重圧力勾配型直交磁場放電(Double-Pressure-Gradient-Type PIG Discharge)が二重の圧力勾配型放電とPIG放電を組み合わせた放電方式であることは当業者にとって自明である(浦本上進,「真空」,第37巻,第10号,1994,p833-838を必要ならば参照のこと)。この放電方式で発生させた放電プラズマ流は極めて高いプラズマ密度を有するので、この放電方式によれば、アルミニウムの加熱蒸発とイオン化を効率的に行うことができる。また、気相成長法による被膜形成方法としてイオンプレーティングを行うことにより、高い被膜形成効率で密着性に優れたアルミニウム被膜を磁石粉末の表面に形成することができる。これにより、短時間で優れた特性を有するアルミニウム被膜を所望する膜厚で磁石粉末の表面に形成することができるので、生産性の向上を図ることができる他、加熱された溶融蒸発部からの輻射熱などによる、磁石粉末の微細な結晶粒の粗大化の問題や、アルミニウム被膜の軟化や溶融に起因する磁石粉末の凝集の問題を回避することができるので、磁気特性の低下を未然に防止することができる。\n\n【0012】\n\nこの工程は、例えば、図1にその模式的正面を示したイオンプレーティング装置を用いて実施することができる。\n\n図1において、真空処理室1の内部上面には、アルミニウム被膜の形成源2を収容した溶融蒸発部3がターゲットとして配置されており、溶融蒸発部3の下方には、図略の手段により上下左右に振動させることが可能なHDDR磁石粉末Xを収容するための粉体保持容器4が配置されている。符号30は、溶融蒸発部3に収容されたアルミニウム被膜の形\n\n成源2から生成したイオン粒子の降下領域である。\n\n真空処理室1の内部下面には排気口5が設けられ、この排気口5を介して排気手段としての真空ポンプ6により、真空処理室1の内部を真空排気するようになっている。真空ポンプ6は、真空処理室1の内部の真空度を少なくとも1×10-3Pa未満に真空化できる性能を有するものが望ましい。真空処理室1の左側面には、例えば、アルゴン、ヘリウム、水素などのキャリアガスを真空処理室1の内部に導入するためのキャリアガス導入口7が開口しており、キャリアガス導入口7に連通するキャリアガス導入経路8に放電プラズマ流発生装置としてのプラズマガン9が配置されている。このプラズマガン9は、陰極10、筒状第1中間電極11、筒状第2中間電極12、補助陽極筒13、補助陽極リング14を、キャリアガスの流れ方向に沿って順次に備えている。陰極10としては、プラズマ発生用に適したTa-LaB6複合陰極などを用いることが望ましい。\n\n符号15は、プラズマガン9における補助陽極領域(補助陽極筒13と補助陽極リング14)を通過する放電プラズマ流Fを収束させるための空芯の電磁コイルである。符号16は、補助陽極リング14を抜けた放電プラズマ流Fを真空処理室1の内部上面に配置された溶融蒸発部3の方向に偏向させるための磁場手段としての永久磁石である。符号17は、筒状第1中間電極11、筒状第2中間電極12、補助陽極筒13、補助陽極リング14および溶融蒸発部3と、陰極10との間の電位差を段階的に増大させるための放電電源である。符号18は、真空処理室1の内部上面に設けられ、真空処理室1の内部での易酸化性のアルミニウム被膜の酸化を抑制するための、水素などの還元性ガスとアルゴンなどの不活性ガスとの混合ガスを導入するガス導入口である。\n\n陰極10からの放電プラズマ流Fは、筒状第1中間電極11、筒状第2中間電極12、補助陽極筒13、補助陽極リング14を順次に抜けて、キャリアガス導入口7を通して真空処理室1の内部に導入される。プラズマガン9における補助陽極領域には、放電プラズマ流Fに平行な強磁場(例えば300〜500ガウス)がかかっており、電子は多数回のマグネトロン運動と中性粒子との多数回の衝突の後に陽極としての補助陽極リング14の中央まで到達できる。補助陽極リング14を抜けた放電プラズマ流Fは、真空処理室1の内部には適当な磁場があるので、陽極としての溶融蒸発部3に照射されることになる。\n\n放電プラズマ流Fは、プラズマガン9に導入するキャリアガス量と真空処理室1の内部の排気速度を調節することで、陰極領域を10Pa〜100Paに、中間電極領域-補助陽極領域を0.1Pa〜10Paに、真空処理室の内部を1×10-2Pa〜0.1Paに維持することにより、二重の圧力勾配の存在下で直流放電が行われて発生させられる。溶融蒸発部3は、例えば、Mo,W,Cまたはセラミックなどの耐熱材料で構成される。溶融蒸発部3の底面がアルミニウム被膜の形成源2の蒸発面3aとなっており、この蒸発面3aには多数の微小な蒸発孔3bが形成されている。溶融蒸発部3に収容されたアルミニウム被膜の形成源2は、微小な蒸発孔3bを通して溶融蒸発部3の外部に臨むことになるが、微小な蒸発孔3bは、溶融したアルミニウム被膜の形成源2の落下を防止しつつその蒸気化を促すことのできる孔径に設定されている。具体的には微小な蒸発孔3bの孔径としては、0.1mm〜数mm程度が望ましい。\n\nHDDR磁石粉末Xは、粉体保持容器4に収容され、この粉体保持容器4を矢示の如く上下左右に振動させることで磁石粉末Xを振動および/または攪拌させる一方、以上の二重圧力勾配型直交磁場放電により発生させた放電プラズマ流Fを、溶融蒸発部3に収容したアルミニウム被膜の形成源2に照射することでアルミニウムを加熱蒸発させてイオン化し、イオンプレーティングを行う。溶融蒸発部3を磁石粉末Xの上方に配置し、溶融蒸発部3に収容されたアルミニウム被膜の形成源2から生成したイオン粒子を、溶融蒸発部3と粉体保持容器4の間に図略の方法で付加した電圧によって加速させて磁石粉末Xに被着させることにより、高い被膜形成効率で、かつ、均一に磁石粉末Xの表面にアルミニウム被膜を形成することができる。磁石粉末Xの表面にアルミニウム被膜を形成するための具体的処理条件は、磁石粉末Xの処理量や所望するアルミニウム被膜の膜厚などに応じて適宜決定される。\n\n【0013】\n\nイオンプレーティングを行う際の真空処理室1の内部のバックグラウンド真空度は、1×10-3Pa以下とすることが望ましい。1×10-3Paを超えると、良質のアルミニウム被膜が形成できない恐れがあるからである。\n\n【0014】\n\nHDDR磁石粉末の表面に形成するアルミニウム被膜の膜厚は0.05μm〜2μmとすることが望ましい。膜厚が0.05μm未満であると、磁石粉末に十分な耐酸化性を付与することができずに、コンパウンド調製時や加熱成形時の高温環境下において、磁石粉末が酸化することで優れた磁気特性を有するボンド磁石を製造することができない恐れがある一方、膜厚が2μmを超えると、アルミニウム被膜で表面被覆したHDDR磁石粉末中における磁石粉末の有効体積が小さくなり、ボンド磁石とした際に優れた磁気特性(特に高い残留磁束密度)を確保することができなくなる恐れがあるからである。なお、HDDR磁石粉末の表面に形成するアルミニウム被膜の膜厚は、より望ましくは0.1μm〜1μmである。\n\n【0015】\n\nアルミニウム被膜で表面被覆されたHDDR磁石粉末中におけるアルミニウム被膜の体積比率は3%以下とすることが望ましく、2%以下とすることがより望ましい。3体積%を超えると、アルミニウム被膜で表面被覆したHDDR磁石粉末中における磁石粉末の有効体積が小さくなり、ボンド磁石とした際に優れた磁気特性(特に高い残留磁束密度)を確保することができなくなる恐れがあるからである。\n\n【0016】\n\nHDDR磁石粉末をアルミニウム被膜で表面被覆する工程は、例えば、処理室の内部の酸素分圧と水分圧の和が1×10-3Pa〜1Paの条件下で、抵抗加熱方式の溶融蒸発部に、水素を0.5ppm〜11ppm含有する水素含有アルミニウムワイヤーを連続供給しながらアルミニウムを蒸発させ、イオンプレーティング法により、温度が50℃〜330℃のHDDR磁石粉末を振動および/または攪拌させながらその表面にアルミニウム被膜を形成する方法を採用して行ってもよい。この方法によっても、短時間で優れた特性を有するアルミニウム被膜を所望する膜厚で磁石粉末の表面に形成することができる。\n\n【0017】\n\n次に、アルミニウム被膜で表面被覆したHDDR磁石粉末を450℃〜600℃で熱処理を行う。この工程により、HDDR磁石粉末の粒子内部に被膜を構成するアルミニウムを適度に拡散させることで磁気特性の向上を図ることができ、アルミニウム被膜で表面被覆していないHDDR磁石粉末に対して、好適には残留磁束密度の低下を3%以下に抑制しつつ保磁力を5%以上向上させることも可能である。熱処理温度が450℃未満であると、アルミニウムの磁石粉末の粒子内部への拡散が十分に起こらずに磁気特性の向上を図ることができない恐れがある一方、熱処理温度が600℃を超えると、磁石粉末が凝集することでボンド磁石の配向を十分に行うことができなかったり、アルミニウムの拡散が必要以上に起こり、典型的には、HDDR磁石粉末の主相であるNd2Fe14B相にアルミニウムが置換して固溶することで10℃を超えるキュリー点の低下を招いたりする恐れがある。このような必要以上のアルミニウムの拡散に起因する問題は、平均結晶粒径が1μm以下のHDDR磁石粉末に顕在する問題である。熱処理温度を450℃〜600℃とすることにより、熱処理を行うことによるキュリー点の低下を熱処理前に比較して10℃以内にすることができる。これは、この熱処理温度では、粒子内部へのアルミニウムの拡散が表面近傍および/または結晶粒界近傍に留まり、Nd2Fe14B相にアルミニウムが置換して固溶するまでには至っていないことを示唆している。なお、この工程は、工業的製造規模においては、自体公知の粉体を攪拌するための回転機構と排気機構を備える加熱炉(例えば特開2002-93610号公報の図2に記載の装置を参照)などを用いて行えばよい。また、この工程は、真空中やアルゴンガスなどの不活性ガス雰囲気中において行うことが望ましい。熱処理温度は、望ましくは500℃〜550℃である。熱処理時間は、望ましくは5分〜30分である。\n\n【0018】\n\n本発明の磁気特性に優れた耐酸化性HDDR磁石粉末は、自体公知の方法で樹脂バインダと混練してボンド磁石用コンパウンドとすることができる。コンパウンド中におけるこの磁石粉末の含有割合は、ボンド磁石を製造するために採用する成形方法に適した含有割合とすればよい。例えば、射出成形を行う場合、コンパウンドは、この磁石粉末を80質量%〜96質量%含有してなることが望ましく、90質量%〜94質量%含有してなることがより望ましい。含有割合が80質量%未満であると、優れた磁気特性を有するボンド磁石を製造することができなくなる恐れがある一方、含有割合が96質量%を超えると、樹脂バインダが少なすぎて優れた流動性を有するコンパウンドが得られないことで、ボンド磁石の配向を十分に行うことができない恐れがあるからである。また、圧縮成形を行う場合、コンパウンドは、この磁石粉末を90質量%〜99質量%含有してなることが望ましく、95質量%〜98質量%含有してなることがより望ましい。\n\n【0019】\n\n樹脂バインダとしては、エポキシ樹脂、フェノール樹脂、メラミン樹脂などの熱硬化性樹脂、ポリアミド(ナイロン66やナイロン6やナイロン12など)、ポリエチレン、ポリプロピレン、ポリ塩化ビニル、ポリエステル、ポリフェニレンサルファイドなどの熱可塑性樹脂、ゴムやエストラマ、これらの変性体や共重合体や混合物(例えば、熱硬化性樹脂(エポキシ樹脂など)に熱可塑性樹脂の粉末を分散させたもの:F.Yamashita, Applications of Rare-Earth Magnets to the Small motor industry, pp.100-111, Proceedings of the seventeenth international workshop, Rare Earth Magnets and Their Applications, August 18-22, 2002, Newark, Delaware, USA, Edited by G.C. Hadjipanayis and M.J.Bonder, Rinton Pressを参照)などを用いることができるが、例えば、射出成形におけるスプルーのリサイクルなどの観点からは熱可塑性樹脂を用いることが望ましい。また、自動車部品に用いられるボンド磁石に採用される樹脂バインダとしては、250℃以上の高融点の熱可塑性樹脂(PPSなど)が望ましい。コンパウンドを調製する際には、カップリング剤や潤滑剤や硬化剤などの添加剤をその目的に応じて通常用いられる添加量にて添加してもよい。\n\n【0020】\n\n以上のようにして調製されたコンパウンドを用いて磁界中で配向させながら所定形状に加熱成形する工程を行うことでボンド磁石を得る。この工程は、自体公知の条件下にて磁界中で配向させながら、射出成形や圧縮成形や押出成形やロール成形などで行えばよい。なお、HDDR磁石粉末を用いたボンド磁石は脱磁が困難であるので、ボンド磁石は、それが適用される部品に直接磁界中で配向させながら加熱成形するようにしてもよい。また、圧縮成形を行うことでボンド磁石を得る場合、例えば、粉末顆粒状のコンパウンドを成形機の金型内に投入した後、磁界中で0.1GPa〜1GPa程度の圧力で圧縮成形し、得られた成形体を樹脂バインダの硬化反応温度で加熱するようにしてもよいし、粉末顆粒状のコンパウンドを成形機の金型内に投入した後、加熱して樹脂バインダを溶融させた状態で磁界中圧縮成形(いわゆる温間圧縮成形)し、得られた成形体を樹脂バインダの硬化反応温度で加熱するようにしてもよい。\n\n【0021】\n\n本発明によれば、平均結晶粒径が1μm以下の微細な結晶粒を粗大化させることなくHDDR磁石粉末に優れた磁気特性と耐酸化性を付与することができる。本発明は、とりわけ、平均粒子径が50μm〜150μmであるHDDR磁石粉末を用いてボンド磁石を製造する際にその効果を発揮する。平均粒子径が50μm未満であると、十分な耐酸化性を磁石粉末に付与することができるに足る膜厚のアルミニウム被膜を磁石粉末の表面に形成した場合、アルミニウム被膜で表面被覆したHDDR磁石粉末中における磁石粉末の有効体積が小さくなり、ボンド磁石とした際に優れた磁気特性(特に高い残留磁束密度)を確保することができなくなる恐れがある一方、平均粒子径が150μmを超えると、樹脂バインダと混練してボンド磁石用コンパウンドを調製しても、流動性や磁界中での配向性に優れたコンパウンドが得られず、射出成形や圧縮成形や押出成形やロール成形などにより所定形状に加熱成形することが困難になる恐れがあるからである。\n\n【0022】\n\n平均粒子径が50μm〜150μmであるHDDR磁石粉末は、所定の組成を有する希土類系磁石合金を水素中で加熱して水素を吸蔵させた後、脱水素処理し、次いで冷却してから所望する平均粒子径になるように粉砕することによって得ることができる。また、所定の組成を有する希土類系磁石合金を所望する平均粒子径になるように粉砕してから、水素中で加熱して水素を吸蔵させた後、脱水素処理し、次いで冷却することによって得ることもできる。水素吸蔵処理は吸熱反応であり、脱水素処理は発熱反応であることから、これらの処理を行う際には合金材料の温度分布が一様にならず、反応が均一に起こらない場合がある。従って、このような問題を回避するために、HDDR処理炉は、原料合金を分割して投入することができる構成や、処理時の吸熱反応や発熱反応と同期して吸熱や発熱に対する温度補償機構を備えたものであることが望ましい。\n\n【0023】\n\n本発明の適用対象として好適なHDDR磁石粉末の詳細は次の通りである。\n\nHDDR磁石粉末は、磁気的異方性を有してなるものが望ましい。高温環境下において優れた磁気特性を発揮するためには、HDDR磁石粉末が備えるべき本来的な残留磁束密度(Br)は1.10T以上であることが望ましく、1.20T以上であることがより望ましく、1.25T以上であることがさらに望ましい。また、保磁力(HcJ)は960kA/m以上であることが望ましく、1000kA/m以上であることがより望ましい。HDDR磁石粉末が本来的にこのような磁気特性を備えるためには、その平均結晶粒径は1μm以下であることが望ましい(下限値は通常0.1μmである)。平均結晶粒径が1μmを越えると、優れた保磁力を得ることができない恐れがある。また、例えば、大気中100℃といったような実使用環境において、酸化に伴う熱減磁が急激に進行し、実用上問題となる恐れがある。\n\nHDDR磁石粉末がR-Fe-B系である場合、RはYを含む希土類元素を意味するが、好適なRはNdおよび/またはPrを主体とした希土類元素である。HDDR磁石粉末中のRの含有量は希土類元素全体で11.0原子%〜14.0原子%であることが望ましく、11.5原子%〜13.5原子%であることがより望ましく、12.0原子%〜13.0原子%であることがさらに望ましい。含有量が11.0原子%未満であると、保磁力が低下し、高温環境下において優れた磁気特性を発揮することができない恐れがある。一方、含有量が14.0原子%を越えると、耐酸化性が低下し、その表面をアルミニウム被膜で被覆して熱処理を行っても、高温環境下において酸化に伴う熱減磁が進行する恐れがある。\n\nRには保磁力の向上を目的として、Dyおよび/またはTbを含有させてもよい。この場合、Dyおよび/またはTbの含有量は3.0原子%以下であることが望ましい。含有量が3.0原子%を越えると、残留磁束密度の低下を招く恐れがある。\n\nHDDR磁石粉末中のBの含有量は4.0原子%〜10.0原子%であることが望ましい。含有量が4.0原子%未満であると、保磁力が低下し、高温環境下において優れた磁気特性を発揮することができない恐れがある。一方、含有量が10.0原子%を越えると、残留磁束密度の低下を招く恐れがある。\n\nHDDR磁石粉末にCoを含有させれば、磁石粉末のキュリー点を上昇させることができるので、耐熱性の向上を図ることができる。この場合、Coの含有量は1.0原子%〜25.0原子%であることが望ましい。含有量が1.0原子%未満であると、磁石粉末のキュリー点を十分に上昇させることができない恐れがある。一方、含有量が25.0原子%を越えると、コストの上昇を招来するだけでなく、十分な磁気特性を得ることができない恐れがある。\n\nHDDR磁石粉末中には、目的に応じて、Al,Si,Ti,V,Cr,Mn,Ni,Cu,Zn,Ga,Ge,Zr,Nb,Mo,Ag,In,Sn,Ta,W,Pt,Auなどを含有させてもよい。この場合、これらの金属元素の含有量は全体で3原子%以下であることが望ましい。これらの金属元素の中でもGa,Zr,Nbは、優れた磁気特性を得る上で有効であるので、HDDR磁石粉末中には、これらの金属元素の少なくとも1種\n\nを0.1原子%〜1.0原子%含有させることが望ましい。\n\nなお、HDDR磁石粉末中の酸素量は重量比で5000ppm以下に抑制することが望ましく、3000ppm以下に抑制することがより望ましい。酸素量が5000ppmを越えると、磁石粉末が酸化して優れた磁気特性を得ることができない恐れがある。\n\n【0024】\n\nアルミニウム被膜の形成源は、アルミニウム以外の金属元素を含むアルミニウム合金であってもよいが、ジスプロシウムなどの希土類元素を含むアルミニウム合金の使用は避けることが望ましい。このような希土類元素を含む合金を用いて被膜を形成した場合、被膜が形成されたHDDR磁石粉末が、磁石粉末、コンパウンド、ボンド磁石のいずれの状態にある場合であっても、磁石粉末の粒子表面に存在する希土類化合物が、わずかな水分の存在によっても容易に水酸化物を形成し、磁石粉末の腐食の進行を促進させたり、ボンド磁石を部品に組み込んだ際に、錆が飛散して周辺部品を汚染したりするといった問題を引き起こす恐れがあるからである。\n\n【0025】\n\nなお、本発明により製造される磁気特性に優れた耐酸化性HDDR磁石粉末を用いたボンド磁石に、耐食性を付与することなどを目的として、その表面に樹脂塗装被膜や電気めっき被膜や化成処理被膜などの各種被膜を単層形成や積層形成してもよいことはいうまでもない。\n\n【実施例】\n\n【0026】\n\n以下、本発明を実施例によってさらに詳細に説明するが、本発明はこれに限定して解釈されるものではない。なお、以下の実施例は、高周波溶解によって組成がNd:12.4原子%,Fe:64.9原子%,Cu:0.1原子%,Co:16.1原子%,Ga:0.2原子%,Zr:0.1原子%,B:6.2原子%の鋳隗を作製し、アルゴンガス雰囲気中で1100℃×24時間焼鈍したものを酸素濃度0.5%以下のアルゴンガス雰囲気中で粉砕して平均粒子径100μmの合金粉末としてからこれを0.15MPaの水素ガス加圧雰囲気中で870℃×3時間の水素化熱処理を行い、その後、減圧(1kPa)アルゴンガス流気中で850℃×1時間の脱水素処理を行ってから冷却して製造したHDDR磁石粉末(平均結晶粒径850nm:磁石粒子の破面の走査型電子顕微鏡(SEM:日立製作所社製S2150)観察による)を用いて行った。\n\n【0027】\n\nA:アルミニウム被膜で表面被覆されたHDDR磁石粉末の製造\n\n図1に示すイオンプレーティング装置を用いてHDDR磁石粉末の表面にアルミニウム被膜を形成した。アルミニウム被膜の形成源としては純アルミニウムを用いた。\n\n内径500mmの粉体保持容器にHDDR磁石粉末を100g収容した後、真空処理室の内部のバックグラウンド真空度が1×10-4Pa以下になるまで真空排気した。\n\n続いて、プラズマガンに導入するアルゴンガス(キャリアガス)量と真空処理室の内部の排気速度を調節することで、陰極領域を約40Paに、中間電極領域-補助陽極領域を約1.3Paに、真空処理室の内部を4×10-2Paに維持した。\n\nその後、粉体保持容器を上下左右に振動させることにより、HDDR磁石粉末を振動および/または攪拌させながら、プラズマガンによって直流放電電流100A、放電電圧70Vの条件で二重圧力勾配型直交磁場放電を起こして放電プラズマ流を発生させ、発生させた放電プラズマ流を、溶融蒸発部に収容したアルミニウム被膜の形成源としての純アルミニウムに照射することでアルミニウムを加熱蒸発させてイオン化し、イオンプレーティングを行うことにより、種々の膜厚と体積比率を有するアルミニウム被膜で表面被覆されたHDDR磁石粉末を作製した。\n\n得られたアルミニウム被膜で表面被覆されたHDDR磁石粉末を光学顕微鏡にて観察したところ、磁石粉末の凝集体は見当たらず、個々の磁石粒子がアルミニウム被膜によって均一に表面被覆されていた。\n\nなお、HDDR磁石粉末の表面に形成されたアルミニウム被膜の膜厚は、サンプルを乳\n\n鉢で軽く粉砕することによって生じた磁石粒子の破面を、SEM(同上)で観察することにより求めた。また、その体積比率は、ICP発光分析によって求めたアルミニウムの質量比率、未処理のHDDR磁石粉末の密度(7.6g/cm3)、アルミニウムの密度(2.7g/cm3)から算出した。\n\n【0028】\n\nB:アルミニウム被膜で表面被覆されたHDDR磁石粉末の熱処理\n\nアルミニウム被膜で表面被覆されたHDDR磁石粉末0.5gをニオブ箔で包んでサンプルとした。このサンプルを赤外線加熱炉の処理室に収容し、真空度が1×10-1Pa以下となるまで真空排気した後、アルゴンガス流気中で所定時間熱処理を行ってから、処理室内でアルゴンガスにより強制冷却を行った。その後、処理室からサンプルを取り出し、アルミニウム被膜で表面被覆されたHDDR磁石粉末の残留磁束密度(Br)と保磁力(HcJ)を振動試料型磁力計(VSM:東英工業社製VSM-5)で測定した。また、磁石粉末の凝集の有無を拡大鏡で確認した。\n\n種々の条件でアルミニウム被膜形成と熱処理を行った結果(試料1〜試料13:但し試料1は熱処理なし)を、アルミニウム被膜で表面被覆していない未処理のHDDR磁石粉末(参考試料1)の結果と、当該磁石粉末に対して直接種々の条件で熱処理を行った結果(参考試料2〜参考試料4)とともに表1と表2に示す。\n\n【0029】\n\n【表1】\n\n\n\n【0030】\n\n【表2】\n\n\n\n【0031】\n\n表1と表2から明らかなように、アルミニウム被膜で表面被覆されたHDDR磁石粉末に対して450℃〜600℃で熱処理を行った場合、保磁力を向上することができた。アルミニウム被膜の膜厚が増加するに従って、残留磁束密度の低下が進行するが、試料3〜試料10の磁石粉末においてはキュリー点の低下は全く乃至はほとんど見られないことを別途の試験によって確認できているので、これらの磁石粉末においては、被膜を構成するアルミニウムは、磁石粉末の粒子内部に適度に拡散して、その表面近傍や結晶粒界近傍にのみ存在し、Nd2Fe14B相には全く乃至はほとんど固溶していないことから、残留磁束密度の低下が3%以下に抑制されたと考えられた。\n\n【0032】\n\n試料1と試料7の磁石粉末の表面を、SEM(同上)を用いて観察したところ、試料1の磁石粉末の表面は、物理蒸着法で形成したアルミニウム被膜特有の性状を有しているのに対し、試料7の磁石粉末の表面は、550℃×15分の熱処理により、被膜を構成するアルミニウムが明らかに少なくとも自己拡散している性状を有していることがわかった。\n\nまた、試料1と試料7と参考試料1の磁石粉末を、フェノール樹脂に埋め込み、研磨剤として平均粒子径が1μmのダイヤモンドペーストを用いて鏡面研磨することにより、断面観察サンプルを作製し、これを電子線プローブマイクロアナライザ(EPMA:島津製作所社製EPM-810)を用いて観察したところ、試料7の磁石粉末の粒子の表面近傍には、アルミニウムリッチな被覆層が存在していることがわかった。\n\nまた、試料1と試料7と参考試料1の磁石粉末について、磁石粉末の粒子内部へのアルミニウムの拡散の程度を確認するために、粒子内部におけるEPMAのAlKα線の強度を評価した。評価は、分光結晶にRAP(酸性フタル酸ルビジウム)を用い、AlKα線の強度が最大になるように分光結晶の角度を調整し、測定時の加速電圧を15kV、照射電流を0.1μA、プローブ径を1μmとし、断面の長径が60μm〜100μmの粉末粒子のほぼ中央に電子線を照射することで発生したAlKα線を測定して行った。AlKα線の強度は、検出部における、10秒間の積算カウント数を5回測定し、その平均値を積算時間(10秒)で除した値(単位:cps)からバックグラウンド値(1037cp\n\ns)を引いた値として算出した。得られた結果を表3に示す。\n\n【0033】\n\n【表3】\n\n\n\n【0034】\n\n表3から明らかなように、試料1の磁石粉末の粒子中央のAlKα線の強度は、参考試料1の磁石粉末の粒子中央のそれとほぼ同等であった。一方、試料7の磁石粉末の粒子中央のAlKα線の強度は、試料1と参考試料1の磁石粉末の粒子中央のそれと比較して明らかに高く、この結果からも、試料7の磁石粉末の粒子内部には、被膜を構成するアルミニウムが拡散していることがわかった。なお、参考試料1の粉末粒子においてもアルミニウムが検出されるのは、HDDR磁石粉末の原料合金に含まれる不純物としてのアルミニウムに起因するものと考えられる。\n\nまた、試料1と試料7の磁石粉末について、永久磁石で外部磁界を付与した熱天秤装置(熱磁気天秤:メトラー·トレド社製TGA/SDTA851e)を用いてキュリー点を測定した。その結果、試料1と試料7の磁石粉末のキュリー点はいずれも473℃であり、熱処理を行うことによるキュリー点の低下は認められなかった。磁石粉末の粒子内部へのアルミニウムの拡散により、Nd2Fe14B相にアルミニウムが置換して固溶すると、キュリー点が低下することから、この結果は、試料7の磁石粉末においては、熱処理による粒子内部へのアルミニウムの拡散が、Nd2Fe14B相にアルミニウムが置換して固溶するまでには至っていないことを示唆している。\n\n以上の結果から、アルミニウム被膜で表面被覆されたHDDR磁石粉末に対して450℃〜600℃で熱処理することにより、保磁力を向上することができたのは、被膜を構成するアルミニウムの磁石粉末の粒子内部への拡散が適度に起こり、表面近傍および/または結晶粒界近傍に留まったことで、Nd2Fe14B相にアルミニウムが置換して固溶するまでには至らなかったことによるものと考えられた。\n\n【0035】\n\nC:アルミニウム被膜で表面被覆されたHDDR磁石粉末を用いたボンド磁石の作製(その1)\n\nエポキシ樹脂とフェノール系硬化剤を重量比率で100:3の割合でメチルエチルケトンに溶解して樹脂液を調製した。表1の試料7の磁石粉末と樹脂液を、試料7の磁石粉末と樹脂液の合計重量に対する樹脂液の重量の比率が3%となるように均一混合した後、メチルエチルケトンを室温で蒸発させて粉末顆粒状のボンド磁石用コンパウンドを調製した。得られたコンパウンドを、100℃の温間で磁場中圧縮成形した。成形時の配向磁場は0.96MA/m、成形圧力は0.6GPaとした。得られた成形体を150℃のアルゴンガス雰囲気中で1時間加熱してエポキシ樹脂を硬化させ、縦12.0mm×横7.6mm×高さ(配向方向)7.4mmのボンド磁石(密度は約5.8g/cm3)を作製した。また、比較例として、表1の試料1の磁石粉末を用いて、同様の方法でボンド磁石を作製した。このようにして得た2種類のボンド磁石に対し、3.2MA/m以上のパルス磁\n\n界を付与して着磁を行った後、BHトレーサを用いて、室温(20℃)、60℃、100℃、140℃における磁気特性を評価した。保磁力の測定結果を表4に示す。\n\n【0036】\n\n【表4】\n\n\n\n【0037】\n\n表4から明らかなように、試料7の磁石粉末は、ボンド磁石作製後も室温から高温の広い温度範囲で、試料1の磁石粉末よりも高い保磁力を有していることが確認できた。\n\n【0038】\n\nまた、このようにして得た2種類のボンド磁石に対し、3.2MA/m以上のパルス磁界を付与して着磁を行った後、大気中100℃で加熱放置した場合の磁束の経時変化を測定した。また、試験開始から1000時間後に再び3.2MA/m以上のパルス磁界を付与して着磁を行い、こうして再着磁を行ったボンド磁石の磁束から、永久減磁率を求めた。結果を図2に示す。\n\n図2から明らかなように、試料1の磁石粉末を用いて作製したボンド磁石は、大気中100℃での長時間放置において、放置時間を対数軸とした場合の減磁が加速的に進行していくのに対し、試料7の磁石粉末を用いて作製したボンド磁石は、減磁の進行が抑制されていることがわかった。\n\nまた、試験開始から1000時間後に再着磁を行うことで求めた永久減磁率は、試料1の磁石粉末を用いて作製したボンド磁石が-6.2%であるのに対し、試料7の磁石粉末を用いて作製したボンド磁石は-5.1%であり、試料1の磁石粉末を用いて作製したボンド磁石よりも改善されていることがわかった。これは、アルミニウム被膜で表面被覆されたHDDR磁石粉末に対して熱処理を行ったことで、被膜を構成するアルミニウムが磁石粉末の粒子内部に適度に拡散し、より均一かつ強固な磁石粉末に優れた耐酸化性が付与されたことに基づくものであると考えられた。\n\n【0039】\n\nD:アルミニウム被膜で表面被覆されたHDDR磁石粉末を用いたボンド磁石の作製(その2)\n\n表1の試料7の磁石粉末7:92質量%、ナイロン12樹脂(宇部興産社製P3012U):6.7質量%、チタネート系カップリング剤(味の素ファインテクノ社製KR-TTS):0.75質量%、エチレンビスステアリン酸アミド:0.55質量%を混合し、ラボプラストミルを用いて回転数80rpm、混練温度230℃、混練時間10分の条件で混練してボンド磁石用コンパウンドを調製した。調製されたコンパウンドを解砕した後、磁界中射出成形機を用い、射出温度270℃、配向磁場800kA/m、金型温度80℃の条件にて、直径10mm×高さ(配向方向)7mmの円柱状ボンド磁石を作製した。得られた円柱状ボンド磁石は、優れた磁気特性と耐酸化性を有するものであった。\n\n【産業上の利用可能性】\n\n【0040】\n\n本発明は、磁気特性に優れた耐酸化性HDDR磁石粉末の新規な製造方法を提供することができる点において産業上の利用可能性を有する。\n\n【図面の簡単な説明】\n\n【0041】\n\n【図1】HDDR磁石粉末をアルミニウム被膜で表面被覆するためのイオンプレーティン\n\nグ装置の一例の模式的正面図である。\n\n【図2】実施例のアルミニウム被膜で表面被覆されたHDDR磁石粉末を用いたボンド磁石の作製(その1)における作製されたボンド磁石の大気中100℃で加熱放置した場合の減磁率を示すグラフである。\n\n【符号の説明】\n\n【0042】\n\n1    真空処理室\n\n2    アルミニウム被膜の形成源\n\n3    溶融蒸発部\n\n3a  蒸発面\n\n3b  蒸発孔\n\n4    粉体保持容器\n\n5    排気口\n\n6    真空ポンプ\n\n7    キャリアガス導入口\n\n8    キャリアガス導入経路\n\n9    プラズマガン\n\n10    陰極\n\n11    筒状第1中間電極\n\n12    筒状第2中間電極\n\n13    補助陽極筒\n\n14    補助陽極リング\n\n15    電磁コイル\n\n16    永久磁石\n\n17    放電電源\n\n18    ガス導入口\n\n30    イオン粒子の降下領域\n\nF    放電プラズマ流\n\nX    HDDR磁石粉末', '【技术领域】\n\n【0001】\n\n本発明は、磁気特性に優れた耐酸化性HDDR磁石粉末の新規な製造方法に関する。\n\n发明背景\n\n【0002】\n\nNd-Fe-B系磁石粉末に代表されるR-Fe-B系磁石粉末(R:Yを含む希土類元素)などの希土類系磁石粉末を、バインダとして熱可塑性樹脂や熱硬化性樹脂などを用いて所定形状に加熱成形することで製造される希土類系ボンド磁石は、樹脂バインダを含有しているために希土類系焼結磁石に比較すれば磁気特性が低くなるものの、フェライト磁石などに比べればなお十分に高い磁気特性を有しており、また、複雑形状や薄肉形状の磁石やラジアル異方性磁石を容易に得ることができるといった希土類系焼結磁石にはない特徴を持っている。従って、希土類系ボンド磁石は、特にスピンドルモータやステッピングモータなどの小型モータに多く用いられ、近年、その需要が増加している。\n\n中でも、所定の組成を有する希土類系磁石合金を水素中で加熱して水素を吸蔵させた後、脱水素処理し、次いで冷却してから粉砕することによって得られる、磁気的異方性を有するHDDR(Hydrogenation-Disproportionation-Desorption-Recombination)磁石粉末(例えば特許文献1や特許文献2を参照)を用いて所定形状に加熱成形したボンド磁石は、磁気特性に優れることから、これまで磁気的等方性希土類系ボンド磁石などが用いられていた製品への応用展開に注目が高まっている。\n\nしかしながら、HDDR磁石粉末は、その組成の大半をRやFeが占めるので、酸化による磁気特性の低下が顕著な磁石粉末であり、HDDR磁石粉末と樹脂バインダを混練してボンド磁石用コンパウンドを調製し、調製されたコンパウンドを用いて磁界中で配向させながら射出成形などにより所定形状に加熱成形してボンド磁石を製造した場合、コンパウンド調製時や加熱成形時の高温環境下(通常150℃以上であり場合によっては250℃を超えることもある)において、HDDR磁石粉末が酸化することで高い磁気特性を有するボンド磁石が得られない場合がある。従って、コンパウンド調製や加熱成形は、より低温で行うことが望ましいが、自動車部品に用いられる射出成形ボンド磁石などは、使用時に120℃以上の高温に曝されることもあるため、ポリフェニレンサルファイド(PPS)樹脂などの高融点樹脂が樹脂バインダとして採用されることから、コンパウンド調製や加熱成形を250℃以上、典型的には300℃以上で行う必要がある。よって、これらの工程を低温で行うことには限界があるので、高温環境下においてもHDDR磁石粉末が\n\n酸化しない方法を開発しなければならない状況にある。また、自動車部品に用いられるボンド磁石は、使用時の高温による磁気特性の低下や、高温で長時間使用した際の磁束の低下が問題になる。これらの問題を解決する方法として、磁石の保磁力そのものを大きくする方法、即ち、温度上昇による保磁力の低下分を予め見込んでおいて、室温での保磁力を大きくする方法が一般的に採用されているが、高い保磁力と高い残留磁束密度を両立させることは困難である。\n\n【0003】\n\n以上のような問題を解決する方法としては、下記の特許文献3にて提案されているような、蒸着、スパッタリング、めっきなどにより、磁気的異方性を有するR-Fe-B系磁石粉末の表面に金属被膜を形成し、金属被膜で表面被覆された磁石粉末を用いてボンド磁石を製造する方法がある。この特許文献3には、この方法の効果として磁石粉末の耐酸化性の向上が記載されており、また、磁石粉末の表面に金属被膜を形成した後、300℃〜1000℃の範囲で熱処理を行うことで、磁石粉末と金属被膜との密着性の向上を図ることができるとともに、被膜を構成する金属の磁石粉末の粒子内部への拡散による磁気特性の向上を図ることができるとされ、その実施例1では、磁石粉末の表面に蒸着によりアルミニウム被膜を形成し、次いで900℃で1時間と600℃で1時間の2段熱処理を行っている。\n\nアルミニウム蒸着被膜は、耐酸化性や量産性に優れていることに加え、部品組み込み時に必要とされる接着剤との接着信頼性に優れている(接着剤が本質的に有する破壊強度に達するまでに被膜と接着剤との間で剥離が生じにくい)ので、磁石成形体に対する耐酸化性被膜として利用価値が高いものであるが、強い磁石粉末と樹脂バインダとの界面強度が要求されるHDDR磁石粉末を用いたボンド磁石における磁石粉末に対しても適用することができることから、特許文献3に記載された方法は注目に値するものである。\n\nしかしながら、平均結晶粒径が通常1μm以下の微細な結晶粒を有するHDDR磁石粉末に対してこの特許文献3に記載された方法に従ってその表面にアルミニウム被膜を形成し、900℃や600℃という高温での熱処理を行うと、磁石粉末の微細な結晶粒が粗大化することで磁気特性が低下するという問題がある。また、このような問題とともに、アルミニウム被膜が軟化や溶融することで磁石粉末の凝集が起こるという問題がある。HDDR磁石粉末のような磁気的異方性希土類系磁石粉末が凝集した場合、凝集体に含まれる磁石粉末の容易磁化方向はランダムであるので、このような凝集体と樹脂バインダを混練してボンド磁石用コンパウンドを調製し、調製されたコンパウンドを用いて磁界中で配向させながら射出成形などにより所定形状に加熱成形してボンド磁石としても、磁石粉末の容易磁化方向を磁界方向に十分に配向させることができないことで、高い磁気特性(特に減磁曲線の角型性)が得られない。また、磁石粉末と樹脂バインダを十分に混練できないことで、ボンド磁石として十分な成形性や機械的強度が得られない。もちろん、凝集体を解砕してもよいが、このような処理を行うと、磁石粉末の表面からのアルミニウム被膜の剥離が多少なりとも起こるので、ボンド磁石中における磁石粉末の酸化を防止するという本来的な目的を達することができなくなるという問題がある。また、アルミニウム被膜で表面被覆されたHDDR磁石粉末に対して900℃や600℃という高温での熱処理を行った場合、磁石粉末の粒子内部へのアルミニウムの拡散が必要以上に起こることで磁気特性の低下を招くという問題がある。HDDR磁石粉末は平均結晶粒径が通常1μm以下の微細な結晶粒を有するので、その主相であるNd2Fe.14B相にアルミニウムが置換して固溶した場合の影響は非常に大きなものとなる。このような現象が起きると、磁化やキュリー点の低下などといった問題を引き起こすが、キュリー点の低下は磁石の耐熱性に悪影響を及ぼすので、自動車部品への使用が困難になる恐れがある。\n\n以上のような問題は、特許文献3に記載の磁石粉末においても考えられるが、ここに記載の磁石粉末は、焼結磁石を粉砕して得られるものであり、平均結晶粒径は5μm以上であることが通常であることから、HDDR磁石粉末とは形状や特性が全く異なるので、以上のような問題による影響はさほど深刻なものではなく、900℃や600℃という高温で熱処理を行うことで主相の一部にアルミニウムが置換しても、その影響はHDDR磁石\n\n粉末と比較して遥かに小さいものである。しかしながら、以上のような問題は、HDDR磁石粉末にとっては致命的なものであるので、特許文献3に記載された方法は、HDDR磁石粉末には適用し得ないものである。\n\n【0004】\n\nまた、下記の特許文献4には、異方性希土類磁石粉末の表面に希土類元素であるネオジム、ジスプロシウム、テルビウム、プラセオジムのコーティング層を設けることで、保磁力の温度係数を改善することができることが記載されているが、希土類元素のコーティング層自体が耐食性や耐酸化性に劣るという問題がある。\n\n【特許文献1】特公平6-82575号公報\n\n【特許文献2】特公平7-68561号公報\n\n【特許文献3】特開平3-217003号公報\n\n【特許文献4】特開2000-96102号公報\n\n发明的描述\n\n本发明要解决的问题\n\n【0005】\n\nそこで本発明は、磁気特性に優れた耐酸化性HDDR磁石粉末の新規な製造方法を提供することを目的とする。\n\n[解决问题的手段]\n\n【0006】\n\n本発明者は上記の点に鑑みて種々の検討を行った結果、HDDR磁石粉末をアルミニウム被膜で表面被覆した後、450℃〜600℃で熱処理を行うことにより、磁気特性に優れた耐酸化性HDDR磁石粉末を製造することができることを知見した。\n\n【0007】\n\n上記の知見に基づいてなされた本発明の磁気特性に優れた耐酸化性HDDR磁石粉末の製造方法は、請求項1記載の通り、HDDR磁石粉末をアルミニウム被膜で表面被覆した後、450℃〜600℃で通过热处理的居里点减少在热处理之前10℃,熱処理を行うことを特徴とする。\n\nまた、請求項2記載の製造方法は、請求項1記載の製造方法において、アルミニウム被膜の膜厚を0.05μm〜2μmとすることを特徴とする。\n\nまた、請求項3記載の製造方法は、請求項1または2記載の製造方法において、アルミニウム被膜の体積比率を3%以下とすることを特徴とする。\n\nまた、請求項4記載の製造方法は、請求項1乃至3のいずれかに記載の製造方法において、HDDR磁石粉末の表面へのアルミニウム被膜の形成を物理蒸着法で行うことを特徴とする。\n\nまた、請求項5記載の製造方法は、請求項4記載の製造方法において、真空処理室の内部にて、二重圧力勾配型直交磁場放電により発生させた放電プラズマ流を、溶融蒸発部に収容したアルミニウム被膜の形成源に照射することでアルミニウムを加熱蒸発させてイオン化し、イオンプレーティングを行うことにより、振動および/または攪拌させたHDDR磁石粉末の表面にアルミニウム被膜を形成することを特徴とする。\n\nまた、請求項6記載の製造方法は、請求項5記載の製造方法において、イオンプレーティングを行う際の真空処理室の内部のバックグラウンド真空度を1×10-3Pa以下とすることを特徴とする。\n\n魔鬼た、本発明のボンド磁石用コンパウンドの製造方法は、請求項7記載の通り、アルミニウム被膜で表面被覆した後、450℃〜600℃で通过热处理的居里点减少在热处理之前10℃,熱処理を行ったHDDR磁石粉末と、樹脂バインダを混練することを特徴とする。\n\n还,8記載の製造方法は、請求項7記載の製造方法において、樹脂バインダが熱可塑性樹脂であることを特徴とする。\n\n魔鬼た、本発明のボンド磁石の製造方法は、請求項9記載の通り、アルミニウム被膜で表面被覆した後、450℃〜600℃で,用热处理的居里点下降很热\n\n与10°C相比熱処理を行ったHDDR磁石粉末と、樹脂バインダを混練することで得たボンド磁石用コンパウンドを用いて磁界中で配向させながら所定形状に加熱成形することを特徴とする。\n\n还,10記載の製造方法は、請求項9記載の製造方法において、所定形状への加熱成形を射出成形、圧縮成形、押出成形、ロール成形から選ばれるいずれか一つの方法で行うことを特徴とする。\n\n【发明效果】\n\n【0008】\n\n本発明によれば、磁気特性に優れた耐酸化性HDDR磁石粉末の製造方法が提供される。\n\n实施本发明的最佳方式\n\n【0009】\n\n本発明の磁気特性に優れた耐酸化性HDDR磁石粉末の製造方法は、HDDR磁石粉末をアルミニウム被膜で表面被覆した後、450℃〜600℃で熱処理を行うことを特徴とするものである。\n\n【0010】\n\n本発明において、HDDR磁石粉末をアルミニウム被膜で表面被覆する工程は、HDDR磁石粉末の表面にアルミニウム被膜を形成することができる方法であればどのような方法で行ってもよいが、被膜形成時における磁石粉末の磁気特性の低下が少ないこと、真空中において粉末表面の吸着水分などを除去してから被膜を形成することでその後に行う熱処理による酸化の問題が少ないことなどに鑑みれば、真空蒸着法やイオンプレーティング法やスパッタリング法などの物理蒸着法で行うことが望ましい。とりわけ、例えば、真空処理室の内部にて、二重圧力勾配型直交磁場放電により発生させた放電プラズマ流を、溶融蒸発部に収容したアルミニウム被膜の形成源に照射することでアルミニウムを加熱蒸発させてイオン化し、イオンプレーティングを行うことにより、振動および/または攪拌させたHDDR磁石粉末の表面にアルミニウム被膜を形成する方法を好適に採用することができる。\n\n【0011】\n\n二重圧力勾配型直交磁場放電(Double-Pressure-Gradient-Type PIG Discharge)が二重の圧力勾配型放電とPIG放電を組み合わせた放電方式であることは当業者にとって自明である(浦本上進,「真空」,第37巻,第10号,1994,p833-838を必要ならば参照のこと)。この放電方式で発生させた放電プラズマ流は極めて高いプラズマ密度を有するので、この放電方式によれば、アルミニウムの加熱蒸発とイオン化を効率的に行うことができる。また、気相成長法による被膜形成方法としてイオンプレーティングを行うことにより、高い被膜形成効率で密着性に優れたアルミニウム被膜を磁石粉末の表面に形成することができる。これにより、短時間で優れた特性を有するアルミニウム被膜を所望する膜厚で磁石粉末の表面に形成することができるので、生産性の向上を図ることができる他、加熱された溶融蒸発部からの輻射熱などによる、磁石粉末の微細な結晶粒の粗大化の問題や、アルミニウム被膜の軟化や溶融に起因する磁石粉末の凝集の問題を回避することができるので、磁気特性の低下を未然に防止することができる。\n\n【0012】\n\nこの工程は、例えば、図1にその模式的正面を示したイオンプレーティング装置を用いて実施することができる。\n\n図1において、真空処理室1の内部上面には、アルミニウム被膜の形成源2を収容した溶融蒸発部3がターゲットとして配置されており、溶融蒸発部3の下方には、図略の手段により上下左右に振動させることが可能なHDDR磁石粉末Xを収容するための粉体保持容器4が配置されている。符号30は、溶融蒸発部3に収容されたアルミニウム被膜の形\n\n成源2から生成したイオン粒子の降下領域である。\n\n真空処理室1の内部下面には排気口5が設けられ、この排気口5を介して排気手段としての真空ポンプ6により、真空処理室1の内部を真空排気するようになっている。真空ポンプ6は、真空処理室1の内部の真空度を少なくとも1×10-3Pa未満に真空化できる性能を有するものが望ましい。真空処理室1の左側面には、例えば、アルゴン、ヘリウム、水素などのキャリアガスを真空処理室1の内部に導入するためのキャリアガス導入口7が開口しており、キャリアガス導入口7に連通するキャリアガス導入経路8に放電プラズマ流発生装置としてのプラズマガン9が配置されている。このプラズマガン9は、陰極10、筒状第1中間電極11、筒状第2中間電極12、補助陽極筒13、補助陽極リング14を、キャリアガスの流れ方向に沿って順次に備えている。陰極10としては、プラズマ発生用に適したTa-LaB6複合陰極などを用いることが望ましい。\n\n符号15は、プラズマガン9における補助陽極領域(補助陽極筒13と補助陽極リング14)を通過する放電プラズマ流Fを収束させるための空芯の電磁コイルである。符号16は、補助陽極リング14を抜けた放電プラズマ流Fを真空処理室1の内部上面に配置された溶融蒸発部3の方向に偏向させるための磁場手段としての永久磁石である。符号17は、筒状第1中間電極11、筒状第2中間電極12、補助陽極筒13、補助陽極リング14および溶融蒸発部3と、陰極10との間の電位差を段階的に増大させるための放電電源である。符号18は、真空処理室1の内部上面に設けられ、真空処理室1の内部での易酸化性のアルミニウム被膜の酸化を抑制するための、水素などの還元性ガスとアルゴンなどの不活性ガスとの混合ガスを導入するガス導入口である。\n\n陰極10からの放電プラズマ流Fは、筒状第1中間電極11、筒状第2中間電極12、補助陽極筒13、補助陽極リング14を順次に抜けて、キャリアガス導入口7を通して真空処理室1の内部に導入される。プラズマガン9における補助陽極領域には、放電プラズマ流Fに平行な強磁場(例えば300〜500ガウス)がかかっており、電子は多数回のマグネトロン運動と中性粒子との多数回の衝突の後に陽極としての補助陽極リング14の中央まで到達できる。補助陽極リング14を抜けた放電プラズマ流Fは、真空処理室1の内部には適当な磁場があるので、陽極としての溶融蒸発部3に照射されることになる。\n\n放電プラズマ流Fは、プラズマガン9に導入するキャリアガス量と真空処理室1の内部の排気速度を調節することで、陰極領域を10Pa〜100Paに、中間電極領域-補助陽極領域を0.1Pa〜10Paに、真空処理室の内部を1×10-2Pa〜0.1Paに維持することにより、二重の圧力勾配の存在下で直流放電が行われて発生させられる。溶融蒸発部3は、例えば、Mo,W,Cまたはセラミックなどの耐熱材料で構成される。溶融蒸発部3の底面がアルミニウム被膜の形成源2の蒸発面3aとなっており、この蒸発面3aには多数の微小な蒸発孔3bが形成されている。溶融蒸発部3に収容されたアルミニウム被膜の形成源2は、微小な蒸発孔3bを通して溶融蒸発部3の外部に臨むことになるが、微小な蒸発孔3bは、溶融したアルミニウム被膜の形成源2の落下を防止しつつその蒸気化を促すことのできる孔径に設定されている。具体的には微小な蒸発孔3bの孔径としては、0.1mm〜数mm程度が望ましい。\n\nHDDR磁石粉末Xは、粉体保持容器4に収容され、この粉体保持容器4を矢示の如く上下左右に振動させることで磁石粉末Xを振動および/または攪拌させる一方、以上の二重圧力勾配型直交磁場放電により発生させた放電プラズマ流Fを、溶融蒸発部3に収容したアルミニウム被膜の形成源2に照射することでアルミニウムを加熱蒸発させてイオン化し、イオンプレーティングを行う。溶融蒸発部3を磁石粉末Xの上方に配置し、溶融蒸発部3に収容されたアルミニウム被膜の形成源2から生成したイオン粒子を、溶融蒸発部3と粉体保持容器4の間に図略の方法で付加した電圧によって加速させて磁石粉末Xに被着させることにより、高い被膜形成効率で、かつ、均一に磁石粉末Xの表面にアルミニウム被膜を形成することができる。磁石粉末Xの表面にアルミニウム被膜を形成するための具体的処理条件は、磁石粉末Xの処理量や所望するアルミニウム被膜の膜厚などに応じて適宜決定される。\n\n【0013】\n\nイオンプレーティングを行う際の真空処理室1の内部のバックグラウンド真空度は、1×10-3希望使PA或更低。 1×10-3Paを超えると、良質のアルミニウム被膜が形成できない恐れがあるからである。\n\n【0014】\n\nHDDR磁石粉末の表面に形成するアルミニウム被膜の膜厚は0.05μm〜2μmとすることが望ましい。膜厚が0.05μm未満であると、磁石粉末に十分な耐酸化性を付与することができずに、コンパウンド調製時や加熱成形時の高温環境下において、磁石粉末が酸化することで優れた磁気特性を有するボンド磁石を製造することができない恐れがある一方、膜厚が2μmを超えると、アルミニウム被膜で表面被覆したHDDR磁石粉末中における磁石粉末の有効体積が小さくなり、ボンド磁石とした際に優れた磁気特性(特に高い残留磁束密度)を確保することができなくなる恐れがあるからである。なお、HDDR磁石粉末の表面に形成するアルミニウム被膜の膜厚は、より望ましくは0.1μm〜1μmである。\n\n【0015】\n\nアルミニウム被膜で表面被覆されたHDDR磁石粉末中におけるアルミニウム被膜の体積比率は3%以下とすることが望ましく、2%以下とすることがより望ましい。3体積%を超えると、アルミニウム被膜で表面被覆したHDDR磁石粉末中における磁石粉末の有効体積が小さくなり、ボンド磁石とした際に優れた磁気特性(特に高い残留磁束密度)を確保することができなくなる恐れがあるからである。\n\n【0016】\n\nHDDR磁石粉末をアルミニウム被膜で表面被覆する工程は、例えば、処理室の内部の酸素分圧と水分圧の和が1×10-3Pa〜1Paの条件下で、抵抗加熱方式の溶融蒸発部に、水素を0.5ppm〜11ppm含有する水素含有アルミニウムワイヤーを連続供給しながらアルミニウムを蒸発させ、イオンプレーティング法により、温度が50℃〜330℃のHDDR磁石粉末を振動および/または攪拌させながらその表面にアルミニウム被膜を形成する方法を採用して行ってもよい。この方法によっても、短時間で優れた特性を有するアルミニウム被膜を所望する膜厚で磁石粉末の表面に形成することができる。\n\n【0017】\n\n次に、アルミニウム被膜で表面被覆したHDDR磁石粉末を450℃〜600℃で熱処理を行う。この工程により、HDDR磁石粉末の粒子内部に被膜を構成するアルミニウムを適度に拡散させることで磁気特性の向上を図ることができ、アルミニウム被膜で表面被覆していないHDDR磁石粉末に対して、好適には残留磁束密度の低下を3%以下に抑制しつつ保磁力を5%以上向上させることも可能である。熱処理温度が450℃未満であると、アルミニウムの磁石粉末の粒子内部への拡散が十分に起こらずに磁気特性の向上を図ることができない恐れがある一方、熱処理温度が600℃を超えると、磁石粉末が凝集することでボンド磁石の配向を十分に行うことができなかったり、アルミニウムの拡散が必要以上に起こり、典型的には、HDDR磁石粉末の主相であるNd2Fe.14B相にアルミニウムが置換して固溶することで10℃を超えるキュリー点の低下を招いたりする恐れがある。このような必要以上のアルミニウムの拡散に起因する問題は、平均結晶粒径が1μm以下のHDDR磁石粉末に顕在する問題である。熱処理温度を450℃〜600℃とすることにより、熱処理を行うことによるキュリー点の低下を熱処理前に比較して10℃以内にすることができる。これは、この熱処理温度では、粒子内部へのアルミニウムの拡散が表面近傍および/または結晶粒界近傍に留まり、Nd2Fe.14B相にアルミニウムが置換して固溶するまでには至っていないことを示唆している。なお、この工程は、工業的製造規模においては、自体公知の粉体を攪拌するための回転機構と排気機構を備える加熱炉(例えば特開2002-93610号公報の図2に記載の装置を参照)などを用いて行えばよい。また、この工程は、真空中やアルゴンガスなどの不活性ガス雰囲気中において行うことが望ましい。熱処理温度は、望ましくは500℃〜550℃である。熱処理時間は、望ましくは5分〜30分である。\n\n【0018】\n\n本発明の磁気特性に優れた耐酸化性HDDR磁石粉末は、自体公知の方法で樹脂バインダと混練してボンド磁石用コンパウンドとすることができる。コンパウンド中におけるこの磁石粉末の含有割合は、ボンド磁石を製造するために採用する成形方法に適した含有割合とすればよい。例えば、射出成形を行う場合、コンパウンドは、この磁石粉末を80質量%〜96質量%含有してなることが望ましく、90質量%〜94質量%含有してなることがより望ましい。含有割合が80質量%未満であると、優れた磁気特性を有するボンド磁石を製造することができなくなる恐れがある一方、含有割合が96質量%を超えると、樹脂バインダが少なすぎて優れた流動性を有するコンパウンドが得られないことで、ボンド磁石の配向を十分に行うことができない恐れがあるからである。また、圧縮成形を行う場合、コンパウンドは、この磁石粉末を90質量%〜99質量%含有してなることが望ましく、95質量%〜98質量%含有してなることがより望ましい。\n\n【0019】\n\n樹脂バインダとしては、エポキシ樹脂、フェノール樹脂、メラミン樹脂などの熱硬化性樹脂、ポリアミド(ナイロン66やナイロン6やナイロン12など)、ポリエチレン、ポリプロピレン、ポリ塩化ビニル、ポリエステル、ポリフェニレンサルファイドなどの熱可塑性樹脂、ゴムやエストラマ、これらの変性体や共重合体や混合物(例えば、熱硬化性樹脂(エポキシ樹脂など)に熱可塑性樹脂の粉末を分散させたもの:F.Yamashita, Applications of Rare-Earth Magnets to the Small motor industry, pp.100-111, Proceedings of the seventeenth international workshop, Rare Earth Magnets and Their Applications, August 18-22, 2002, Newark, Delaware, USA, Edited by G.C. Hadjipanayis and M.J.Bonder, Rinton Pressを参照)などを用いることができるが、例えば、射出成形におけるスプルーのリサイクルなどの観点からは熱可塑性樹脂を用いることが望ましい。また、自動車部品に用いられるボンド磁石に採用される樹脂バインダとしては、250℃以上の高融点の熱可塑性樹脂(PPSなど)が望ましい。コンパウンドを調製する際には、カップリング剤や潤滑剤や硬化剤などの添加剤をその目的に応じて通常用いられる添加量にて添加してもよい。\n\n【0020】\n\n以上のようにして調製されたコンパウンドを用いて磁界中で配向させながら所定形状に加熱成形する工程を行うことでボンド磁石を得る。この工程は、自体公知の条件下にて磁界中で配向させながら、射出成形や圧縮成形や押出成形やロール成形などで行えばよい。なお、HDDR磁石粉末を用いたボンド磁石は脱磁が困難であるので、ボンド磁石は、それが適用される部品に直接磁界中で配向させながら加熱成形するようにしてもよい。また、圧縮成形を行うことでボンド磁石を得る場合、例えば、粉末顆粒状のコンパウンドを成形機の金型内に投入した後、磁界中で0.1GPa〜1GPa程度の圧力で圧縮成形し、得られた成形体を樹脂バインダの硬化反応温度で加熱するようにしてもよいし、粉末顆粒状のコンパウンドを成形機の金型内に投入した後、加熱して樹脂バインダを溶融させた状態で磁界中圧縮成形(いわゆる温間圧縮成形)し、得られた成形体を樹脂バインダの硬化反応温度で加熱するようにしてもよい。\n\n【0021】\n\n本発明によれば、平均結晶粒径が1μm以下の微細な結晶粒を粗大化させることなくHDDR磁石粉末に優れた磁気特性と耐酸化性を付与することができる。本発明は、とりわけ、平均粒子径が50μm〜150μmであるHDDR磁石粉末を用いてボンド磁石を製造する際にその効果を発揮する。平均粒子径が50μm未満であると、十分な耐酸化性を磁石粉末に付与することができるに足る膜厚のアルミニウム被膜を磁石粉末の表面に形成した場合、アルミニウム被膜で表面被覆したHDDR磁石粉末中における磁石粉末の有効体積が小さくなり、ボンド磁石とした際に優れた磁気特性(特に高い残留磁束密度)を確保することができなくなる恐れがある一方、平均粒子径が150μmを超えると、樹脂バインダと混練してボンド磁石用コンパウンドを調製しても、流動性や磁界中での配向性に優れたコンパウンドが得られず、射出成形や圧縮成形や押出成形やロール成形などにより所定形状に加熱成形することが困難になる恐れがあるからである。\n\n【0022】\n\n平均粒子径が50μm〜150μmであるHDDR磁石粉末は、所定の組成を有する希土類系磁石合金を水素中で加熱して水素を吸蔵させた後、脱水素処理し、次いで冷却してから所望する平均粒子径になるように粉砕することによって得ることができる。また、所定の組成を有する希土類系磁石合金を所望する平均粒子径になるように粉砕してから、水素中で加熱して水素を吸蔵させた後、脱水素処理し、次いで冷却することによって得ることもできる。水素吸蔵処理は吸熱反応であり、脱水素処理は発熱反応であることから、これらの処理を行う際には合金材料の温度分布が一様にならず、反応が均一に起こらない場合がある。従って、このような問題を回避するために、HDDR処理炉は、原料合金を分割して投入することができる構成や、処理時の吸熱反応や発熱反応と同期して吸熱や発熱に対する温度補償機構を備えたものであることが望ましい。\n\n【0023】\n\n本発明の適用対象として好適なHDDR磁石粉末の詳細は次の通りである。\n\nHDDR磁石粉末は、磁気的異方性を有してなるものが望ましい。高温環境下において優れた磁気特性を発揮するためには、HDDR磁石粉末が備えるべき本来的な残留磁束密度(Br)は1.10T以上であることが望ましく、1.20T以上であることがより望ましく、1.25T以上であることがさらに望ましい。また、保磁力(HcJ)は960kA/m以上であることが望ましく、1000kA/m以上であることがより望ましい。HDDR磁石粉末が本来的にこのような磁気特性を備えるためには、その平均結晶粒径は1μm以下であることが望ましい(下限値は通常0.1μmである)。平均結晶粒径が1μmを越えると、優れた保磁力を得ることができない恐れがある。また、例えば、大気中100℃といったような実使用環境において、酸化に伴う熱減磁が急激に進行し、実用上問題となる恐れがある。\n\nHDDR磁石粉末がR-Fe-B系である場合、RはYを含む希土類元素を意味するが、好適なRはNdおよび/またはPrを主体とした希土類元素である。HDDR磁石粉末中のRの含有量は希土類元素全体で11.0原子%〜14.0原子%であることが望ましく、11.5原子%〜13.5原子%であることがより望ましく、12.0原子%〜13.0原子%であることがさらに望ましい。含有量が11.0原子%未満であると、保磁力が低下し、高温環境下において優れた磁気特性を発揮することができない恐れがある。一方、含有量が14.0原子%を越えると、耐酸化性が低下し、その表面をアルミニウム被膜で被覆して熱処理を行っても、高温環境下において酸化に伴う熱減磁が進行する恐れがある。\n\nRには保磁力の向上を目的として、Dyおよび/またはTbを含有させてもよい。この場合、Dyおよび/またはTbの含有量は3.0原子%以下であることが望ましい。含有量が3.0原子%を越えると、残留磁束密度の低下を招く恐れがある。\n\nHDDR磁石粉末中のBの含有量は4.0原子%〜10.0原子%であることが望ましい。含有量が4.0原子%未満であると、保磁力が低下し、高温環境下において優れた磁気特性を発揮することができない恐れがある。一方、含有量が10.0原子%を越えると、残留磁束密度の低下を招く恐れがある。\n\nHDDR磁石粉末にCoを含有させれば、磁石粉末のキュリー点を上昇させることができるので、耐熱性の向上を図ることができる。この場合、Coの含有量は1.0原子%〜25.0原子%であることが望ましい。含有量が1.0原子%未満であると、磁石粉末のキュリー点を十分に上昇させることができない恐れがある。一方、含有量が25.0原子%を越えると、コストの上昇を招来するだけでなく、十分な磁気特性を得ることができない恐れがある。\n\nHDDR磁石粉末中には、目的に応じて、Al,Si,Ti,V,Cr,Mn,Ni,Cu,Zn,Ga,Ge,Zr,Nb,Mo,Ag,In,Sn,Ta,W,Pt,Auなどを含有させてもよい。この場合、これらの金属元素の含有量は全体で3原子%以下であることが望ましい。これらの金属元素の中でもGa,Zr,Nbは、優れた磁気特性を得る上で有効であるので、HDDR磁石粉末中には、これらの金属元素の少なくとも1種\n\nを0.1原子%〜1.0原子%含有させることが望ましい。\n\nなお、HDDR磁石粉末中の酸素量は重量比で5000ppm以下に抑制することが望ましく、3000ppm以下に抑制することがより望ましい。酸素量が5000ppmを越えると、磁石粉末が酸化して優れた磁気特性を得ることができない恐れがある。\n\n【0024】\n\nアルミニウム被膜の形成源は、アルミニウム以外の金属元素を含むアルミニウム合金であってもよいが、ジスプロシウムなどの希土類元素を含むアルミニウム合金の使用は避けることが望ましい。このような希土類元素を含む合金を用いて被膜を形成した場合、被膜が形成されたHDDR磁石粉末が、磁石粉末、コンパウンド、ボンド磁石のいずれの状態にある場合であっても、磁石粉末の粒子表面に存在する希土類化合物が、わずかな水分の存在によっても容易に水酸化物を形成し、磁石粉末の腐食の進行を促進させたり、ボンド磁石を部品に組み込んだ際に、錆が飛散して周辺部品を汚染したりするといった問題を引き起こす恐れがあるからである。\n\n【0025】\n\nなお、本発明により製造される磁気特性に優れた耐酸化性HDDR磁石粉末を用いたボンド磁石に、耐食性を付与することなどを目的として、その表面に樹脂塗装被膜や電気めっき被膜や化成処理被膜などの各種被膜を単層形成や積層形成してもよいことはいうまでもない。\n\n【例子】\n\n【0026】\n\n以下、本発明を実施例によってさらに詳細に説明するが、本発明はこれに限定して解釈されるものではない。なお、以下の実施例は、高周波溶解によって組成がNd:12.4原子%,Fe:64.9原子%,Cu:0.1原子%,Co:16.1原子%,Ga:0.2原子%,Zr:0.1原子%,B:6.2原子%の鋳隗を作製し、アルゴンガス雰囲気中で1100℃×24時間焼鈍したものを酸素濃度0.5%以下のアルゴンガス雰囲気中で粉砕して平均粒子径100μmの合金粉末としてからこれを0.15MPaの水素ガス加圧雰囲気中で870℃×3時間の水素化熱処理を行い、その後、減圧(1kPa)アルゴンガス流気中で850℃×1時間の脱水素処理を行ってから冷却して製造したHDDR磁石粉末(平均結晶粒径850nm:磁石粒子の破面の走査型電子顕微鏡(SEM:日立製作所社製S2150)観察による)を用いて行った。\n\n【0027】\n\nA:アルミニウム被膜で表面被覆されたHDDR磁石粉末の製造\n\n図1に示すイオンプレーティング装置を用いてHDDR磁石粉末の表面にアルミニウム被膜を形成した。アルミニウム被膜の形成源としては純アルミニウムを用いた。\n\n内径500mmの粉体保持容器にHDDR磁石粉末を100g収容した後、真空処理室の内部のバックグラウンド真空度が1×10-4Pa以下になるまで真空排気した。\n\n続いて、プラズマガンに導入するアルゴンガス(キャリアガス)量と真空処理室の内部の排気速度を調節することで、陰極領域を約40Paに、中間電極領域-補助陽極領域を約1.3Paに、真空処理室の内部を4×10-2它保持在PA。\n\nその後、粉体保持容器を上下左右に振動させることにより、HDDR磁石粉末を振動および/または攪拌させながら、プラズマガンによって直流放電電流100A、放電電圧70Vの条件で二重圧力勾配型直交磁場放電を起こして放電プラズマ流を発生させ、発生させた放電プラズマ流を、溶融蒸発部に収容したアルミニウム被膜の形成源としての純アルミニウムに照射することでアルミニウムを加熱蒸発させてイオン化し、イオンプレーティングを行うことにより、種々の膜厚と体積比率を有するアルミニウム被膜で表面被覆されたHDDR磁石粉末を作製した。\n\n得られたアルミニウム被膜で表面被覆されたHDDR磁石粉末を光学顕微鏡にて観察したところ、磁石粉末の凝集体は見当たらず、個々の磁石粒子がアルミニウム被膜によって均一に表面被覆されていた。\n\nなお、HDDR磁石粉末の表面に形成されたアルミニウム被膜の膜厚は、サンプルを乳\n\n鉢で軽く粉砕することによって生じた磁石粒子の破面を、SEM(同上)で観察することにより求めた。また、その体積比率は、ICP発光分析によって求めたアルミニウムの質量比率、未処理のHDDR磁石粉末の密度(7.6g/cm3)、アルミニウムの密度(2.7g/cm3计算出来)。\n\n【0028】\n\nB:アルミニウム被膜で表面被覆されたHDDR磁石粉末の熱処理\n\nアルミニウム被膜で表面被覆されたHDDR磁石粉末0.5gをニオブ箔で包んでサンプルとした。このサンプルを赤外線加熱炉の処理室に収容し、真空度が1×10-1Pa以下となるまで真空排気した後、アルゴンガス流気中で所定時間熱処理を行ってから、処理室内でアルゴンガスにより強制冷却を行った。その後、処理室からサンプルを取り出し、アルミニウム被膜で表面被覆されたHDDR磁石粉末の残留磁束密度(Br)と保磁力(HcJ)を振動試料型磁力計(VSM:東英工業社製VSM-5)で測定した。また、磁石粉末の凝集の有無を拡大鏡で確認した。\n\n種々の条件でアルミニウム被膜形成と熱処理を行った結果(試料1〜試料13:但し試料1は熱処理なし)を、アルミニウム被膜で表面被覆していない未処理のHDDR磁石粉末(参考試料1)の結果と、当該磁石粉末に対して直接種々の条件で熱処理を行った結果(参考試料2〜参考試料4)とともに表1と表2に示す。\n\n【0029】\n\n【表格1】\n\n\n\n【0030】\n\n[表2]\n\n\n\n【0031】\n\n表1と表2から明らかなように、アルミニウム被膜で表面被覆されたHDDR磁石粉末に対して450℃〜600℃で熱処理を行った場合、保磁力を向上することができた。アルミニウム被膜の膜厚が増加するに従って、残留磁束密度の低下が進行するが、試料3〜試料10の磁石粉末においてはキュリー点の低下は全く乃至はほとんど見られないことを別途の試験によって確認できているので、これらの磁石粉末においては、被膜を構成するアルミニウムは、磁石粉末の粒子内部に適度に拡散して、その表面近傍や結晶粒界近傍にのみ存在し、Nd2Fe.14B相には全く乃至はほとんど固溶していないことから、残留磁束密度の低下が3%以下に抑制されたと考えられた。\n\n【0032】\n\n試料1と試料7の磁石粉末の表面を、SEM(同上)を用いて観察したところ、試料1の磁石粉末の表面は、物理蒸着法で形成したアルミニウム被膜特有の性状を有しているのに対し、試料7の磁石粉末の表面は、550℃×15分の熱処理により、被膜を構成するアルミニウムが明らかに少なくとも自己拡散している性状を有していることがわかった。\n\nまた、試料1と試料7と参考試料1の磁石粉末を、フェノール樹脂に埋め込み、研磨剤として平均粒子径が1μmのダイヤモンドペーストを用いて鏡面研磨することにより、断面観察サンプルを作製し、これを電子線プローブマイクロアナライザ(EPMA:島津製作所社製EPM-810)を用いて観察したところ、試料7の磁石粉末の粒子の表面近傍には、アルミニウムリッチな被覆層が存在していることがわかった。\n\nまた、試料1と試料7と参考試料1の磁石粉末について、磁石粉末の粒子内部へのアルミニウムの拡散の程度を確認するために、粒子内部におけるEPMAのAlKα線の強度を評価した。評価は、分光結晶にRAP(酸性フタル酸ルビジウム)を用い、AlKα線の強度が最大になるように分光結晶の角度を調整し、測定時の加速電圧を15kV、照射電流を0.1μA、プローブ径を1μmとし、断面の長径が60μm〜100μmの粉末粒子のほぼ中央に電子線を照射することで発生したAlKα線を測定して行った。AlKα線の強度は、検出部における、10秒間の積算カウント数を5回測定し、その平均値を積算時間(10秒)で除した値(単位:cps)からバックグラウンド値(1037cp\n\ns)を引いた値として算出した。所得结果如表3所示。\n\n【0033】\n\n[表3]\n\n\n\n【0034】\n\n表3から明らかなように、試料1の磁石粉末の粒子中央のAlKα線の強度は、参考試料1の磁石粉末の粒子中央のそれとほぼ同等であった。一方、試料7の磁石粉末の粒子中央のAlKα線の強度は、試料1と参考試料1の磁石粉末の粒子中央のそれと比較して明らかに高く、この結果からも、試料7の磁石粉末の粒子内部には、被膜を構成するアルミニウムが拡散していることがわかった。なお、参考試料1の粉末粒子においてもアルミニウムが検出されるのは、HDDR磁石粉末の原料合金に含まれる不純物としてのアルミニウムに起因するものと考えられる。\n\nFurther, the Curie point was measured using a thermal balance device (thermomagnetic balance: TGA / SDTA 851e manufactured by Mettra Toledo Co., Ltd.) with an external magnetic field for the magnet powder of the sample 1 and the sample 7 with a permanent磁铁。その結果、試料1と試料7の磁石粉末のキュリー点はいずれも473℃であり、熱処理を行うことによるキュリー点の低下は認められなかった。磁石粉末の粒子内部へのアルミニウムの拡散により、Nd2Fe.14B相にアルミニウムが置換して固溶すると、キュリー点が低下することから、この結果は、試料7の磁石粉末においては、熱処理による粒子内部へのアルミニウムの拡散が、Nd2Fe.14B相にアルミニウムが置換して固溶するまでには至っていないことを示唆している。\n\n以上の結果から、アルミニウム被膜で表面被覆されたHDDR磁石粉末に対して450℃〜600℃で熱処理することにより、保磁力を向上することができたのは、被膜を構成するアルミニウムの磁石粉末の粒子内部への拡散が適度に起こり、表面近傍および/または結晶粒界近傍に留まったことで、Nd2Fe.14B相にアルミニウムが置換して固溶するまでには至らなかったことによるものと考えられた。\n\n【0035】\n\nC:アルミニウム被膜で表面被覆されたHDDR磁石粉末を用いたボンド磁石の作製(その1)\n\nエポキシ樹脂とフェノール系硬化剤を重量比率で100:3の割合でメチルエチルケトンに溶解して樹脂液を調製した。表1の試料7の磁石粉末と樹脂液を、試料7の磁石粉末と樹脂液の合計重量に対する樹脂液の重量の比率が3%となるように均一混合した後、メチルエチルケトンを室温で蒸発させて粉末顆粒状のボンド磁石用コンパウンドを調製した。得られたコンパウンドを、100℃の温間で磁場中圧縮成形した。成形時の配向磁場は0.96MA/m、成形圧力は0.6GPaとした。得られた成形体を150℃のアルゴンガス雰囲気中で1時間加熱してエポキシ樹脂を硬化させ、縦12.0mm×横7.6mm×高さ(配向方向)7.4mmのボンド磁石(密度は約5.8g/cm3达到了)。また、比較例として、表1の試料1の磁石粉末を用いて、同様の方法でボンド磁石を作製した。このようにして得た2種類のボンド磁石に対し、3.2MA/m以上のパルス磁\n\n界を付与して着磁を行った後、BHトレーサを用いて、室温(20℃)、60℃、100℃、140℃における磁気特性を評価した。保磁力の測定結果を表4に示す。\n\n【0036】\n\n表4.\n\n\n\n【0037】\n\n表4から明らかなように、試料7の磁石粉末は、ボンド磁石作製後も室温から高温の広い温度範囲で、試料1の磁石粉末よりも高い保磁力を有していることが確認できた。\n\n【0038】\n\nまた、このようにして得た2種類のボンド磁石に対し、3.2MA/m以上のパルス磁界を付与して着磁を行った後、大気中100℃で加熱放置した場合の磁束の経時変化を測定した。また、試験開始から1000時間後に再び3.2MA/m以上のパルス磁界を付与して着磁を行い、こうして再着磁を行ったボンド磁石の磁束から、永久減磁率を求めた。结果如图2所示。\n\n図2から明らかなように、試料1の磁石粉末を用いて作製したボンド磁石は、大気中100℃での長時間放置において、放置時間を対数軸とした場合の減磁が加速的に進行していくのに対し、試料7の磁石粉末を用いて作製したボンド磁石は、減磁の進行が抑制されていることがわかった。\n\nまた、試験開始から1000時間後に再着磁を行うことで求めた永久減磁率は、試料1の磁石粉末を用いて作製したボンド磁石が-6.2%であるのに対し、試料7の磁石粉末を用いて作製したボンド磁石は-5.1%であり、試料1の磁石粉末を用いて作製したボンド磁石よりも改善されていることがわかった。これは、アルミニウム被膜で表面被覆されたHDDR磁石粉末に対して熱処理を行ったことで、被膜を構成するアルミニウムが磁石粉末の粒子内部に適度に拡散し、より均一かつ強固な磁石粉末に優れた耐酸化性が付与されたことに基づくものであると考えられた。\n\n【0039】\n\nD:アルミニウム被膜で表面被覆されたHDDR磁石粉末を用いたボンド磁石の作製(その2)\n\n表1の試料7の磁石粉末7:92質量%、ナイロン12樹脂(宇部興産社製P3012U):6.7質量%、チタネート系カップリング剤(味の素ファインテクノ社製KR-TTS):0.75質量%、エチレンビスステアリン酸アミド:0.55質量%を混合し、ラボプラストミルを用いて回転数80rpm、混練温度230℃、混練時間10分の条件で混練してボンド磁石用コンパウンドを調製した。調製されたコンパウンドを解砕した後、磁界中射出成形機を用い、射出温度270℃、配向磁場800kA/m、金型温度80℃の条件にて、直径10mm×高さ(配向方向)7mmの円柱状ボンド磁石を作製した。得られた円柱状ボンド磁石は、優れた磁気特性と耐酸化性を有するものであった。\n\n【工业可用性】\n\n【0040】\n\n本発明は、磁気特性に優れた耐酸化性HDDR磁石粉末の新規な製造方法を提供することができる点において産業上の利用可能性を有する。\n\n[简要描述;简介]\n\n【0041】\n\n【图1】HDDR磁石粉末をアルミニウム被膜で表面被覆するためのイオンプレーティン\n\nグ装置の一例の模式的正面図である。\n\n【图2】実施例のアルミニウム被膜で表面被覆されたHDDR磁石粉末を用いたボンド磁石の作製(その1)における作製されたボンド磁石の大気中100℃で加熱放置した場合の減磁率を示すグラフである。\n\n[标志的说明]\n\n【0042】\n\n1真空处理室\n\n2 アルミニウム被膜の形成源\n\n3 溶融蒸発部\n\n3a 蒸発面\n\n3b 蒸発孔\n\n4 粉体保持容器\n\n5 排気口\n\n6真空泵\n\n7 キャリアガス導入口\n\n8 キャリアガス導入経路\n\n9 プラズマガン\n\n10个阴极\n\n11 筒状第1中間電極\n\n12 筒状第2中間電極\n\n13 補助陽極筒\n\n14 補助陽極リング\n\n15电磁线圈\n\n16永磁体\n\n17 放電電源\n\n18 ガス導入口\n\n30 イオン粒子の降下領域\n\nF 放電プラズマ流\n\nX HDDR磁粉');
INSERT INTO `os_patent_instruction_text` VALUES (13027, 22856, '【技術分野】\n\n【0001】\n\n本発明は、希土類系永久磁石をはじめとする各種の物品の表面に形成したニッケルめっき被膜の濡れ性を改善する方法に関する。\n\n【背景技術】\n\n【0002】\n\nNd-Fe-B系永久磁石に代表されるR-Fe-B系永久磁石やSm-Fe-N系永久磁石に代表されるR-Fe-N系永久磁石などの希土類系永久磁石は、資源的に豊富で安価な材料が用いられ、かつ、高い磁気特性を有していることから、特にR-Fe-B系永久磁石は今日様々な分野で使用されている。しかしながら、希土類系永久磁石は反応性の高い希土類元素:Rを含むため、大気中で酸化腐食されやすく、何の表面処理をも行わずに使用した場合には、わずかな酸やアルカリや水分などの存在によって表面から腐食が進行して錆が発生し、それに伴って、磁石特性の劣化やばらつきを招く。さらに、錆が発生した磁石を磁気回路などの装置に組み込んだ場合、錆が飛散して周辺部品を汚染する恐れがある。上記の点に鑑み、希土類系永久磁石の表面に優れた耐食性を有する被膜としてニッケルめっき被膜を形成する方法が広く採用されている。しかしながら、表面にニッケルめっき被膜を有する希土類系永久磁石を部品(モータや電子部品など)に組み込む際、ニッケルめっき被膜と部品との間には、接着剤を介した強い接着性が要求されるにもかかわらず、ニッケルめっき被膜はアルミニウム蒸着被膜などと比較して、強い接着性を獲得するための第一条件とも言える濡れ性に劣ることから、接着剥がれなどの問題が発生することがある。\n\n【0003】\n\n上記のような問題を解決するため方法としては、ニッケルめっき被膜の濡れ性を改善するために、ニッケルめっき被膜の表面に化成処理被膜を形成する方法が考えられる。しかしながら、ニッケルは、亜鉛や鉄などと比較して貴な金属であるので、単にニッケルが関与する酸化還元反応を利用した化成処理では、その表面に化成処理被膜を形成することは非常に困難である。そこで、このような事情を考慮した上で、ニッケルめっき被膜の表面に化成処理被膜を形成する方法として、特許文献1においては、ニッケルめっき被膜の表面にクロム酸塩被膜を形成する方法が提案されており、特許文献2においては、ニッケルめっき被膜の表面にリン酸亜鉛被膜を形成する方法が提案されている。\n\n【特許文献1】特開平5-198414号公報\n\n【特許文献2】特開平6-318512号公報\n\n【発明の開示】\n\n【発明が解決しようとする課題】\n\n【0004】\n\n上記のいずれの特許文献で提案されている方法も、ニッケルめっき被膜の濡れ性の改善を図ることができる点において優れたものである。しかしながら、特許文献1で提案されている方法では、環境や人体への影響を考慮すれば使用を控えたい6価クロムを含有する処理液を用いる必要があり、特許文献2で提案されている方法では、ニッケルめっき被膜\n\nの表面にリン酸亜鉛被膜を形成するためには、ニッケルめっき被膜の表面でリン酸が酸化還元反応するだけでは不十分であることから、反応性が高く安定性に劣る処理液を用いてニッケルめっき被膜の表面をエッチングする必要がある。従って、どちらの方法も、実用面においては必ずしも満足できるに足るものではないことから、ニッケルめっき被膜の濡れ性を改善するための新しい方法が求められている。\n\nそこで本発明は、希土類系永久磁石をはじめとする各種の物品の表面に形成したニッケルめっき被膜の濡れ性を、環境に優しく簡便に改善する方法を提供することを目的とする。\n\n【課題を解決するための手段】\n\n【0005】\n\n本発明者は上記の点に鑑み鋭意検討を行った結果、電解還元法によりニッケルめっき被膜の表面にモリブデン酸塩被膜を電着して形成することで、ニッケルめっき被膜の濡れ性を、環境に優しく簡便に改善することができることを知見した。\n\n【0006】\n\n上記の知見に基づいてなされた本発明の物品の表面に形成したニッケルめっき被膜の濡れ性を改善する方法は、請求項1記載の通り、ニッケルめっき被膜を表面に有する物品を、モリブデン酸錯体を含有する処理液に浸漬し、電解還元法によりニッケルめっき被膜の表面にモリブデン酸塩被膜を電着して形成することを特徴とする。\n\nまた、請求項2記載の方法は、請求項1記載の方法において、モリブデン酸塩被膜がモリブデン酸ナトリウム被膜またはモリブデン酸カリウム被膜であることを特徴とする。\n\nまた、請求項3記載の方法は、請求項1または2記載の方法において、ニッケルめっき被膜の表面へのモリブデン酸塩被膜の付着量が膜厚として0.005μm〜1μmであることを特徴とする。\n\n  また、請求項4記載の方法は、請求項1記載の方法において、モリブデン酸錯体を含有する処理液を、モリブデン酸塩と、クエン酸塩,酢酸塩,コハク酸塩,マロン酸塩,酒石酸塩,グルコン酸塩から選ばれる少なくとも1種類の錯化剤を用いて調製することを特徴とする。\n\nまた、請求項5記載の方法は、請求項4記載の方法において、モリブデン酸錯体を含有する処理液を、モリブデン酸塩としてモリブデン酸ナトリウムまたはモリブデン酸カリウムと、錯化剤としてクエン酸ナトリウムまたはクエン酸カリウムを用いて調製することを特徴とする。\n\nまた、請求項6記載の方法は、請求項1乃至5のいずれかに記載の方法において、モリブデン酸錯体を含有する処理液が硫酸アルカリ金属塩を更に含有してなることを特徴とする。\n\nまた、請求項7記載の方法は、請求項1乃至6のいずれかに記載の方法において、物品が希土類系永久磁石であることを特徴とする。\n\n  また、本発明のニッケルめっき被膜の濡れ性が改善された物品の製造方法は、請求項8記載の通り、ニッケルめっき被膜を表面に有する物品を、モリブデン酸錯体を含有する処理液に浸漬し、電解還元法によりニッケルめっき被膜の表面にモリブデン酸塩被膜を電着して形成することを特徴とする。\n\n【発明の効果】\n\n【0007】\n\n本発明によれば、希土類系永久磁石をはじめとする各種の物品の表面に形成したニッケルめっき被膜の濡れ性を、環境に優しく簡便に改善する方法を提供することができる。\n\n【発明を実施するための最良の形態】\n\n【0008】\n\n本発明が適用される物品としては、希土類系永久磁石を具体例として挙げることができ\n\nるが、その表面に形成したニッケルめっき被膜に優れた濡れ性が要求される物品であれば、どのようなものであってもよい。\n\n【0009】\n\n物品の表面に形成されるニッケルめっき被膜は、自体公知の電解ニッケルめっきを含め、どのような方法で形成されたものでもよい。また、ニッケルめっき被膜は、物品の表面に直接的に形成されたものでもよいし、他の被膜を介して間接的に形成されたものでもよい。\n\n【0010】\n\nニッケルめっき被膜の表面に形成するモリブデン酸塩被膜としては、モリブデン酸リチウム被膜,モリブデン酸ナトリウム被膜,モリブデン酸カリウム被膜などのモリブデン酸アルカリ金属被膜が挙げられる。ニッケルめっき被膜の表面へのモリブデン酸塩被膜の形成は、例えば、ニッケルめっき被膜を表面に有する物品を、モリブデン酸錯体を含有する処理液に浸漬し、電解還元法によりニッケルめっき被膜の表面にモリブデン酸塩被膜を電着することで行うことができる。モリブデン酸錯体を含有する処理液は、モリブデン酸アルカリ金属塩などのモリブデン酸塩と、錯化剤を用いて調製することができる。錯化剤としては、クエン酸塩,酢酸塩,コハク酸塩,マロン酸塩,酒石酸塩,グルコン酸塩(アルカリ金属塩など)などが挙げられる。モリブデン酸ナトリウム被膜やモリブデン酸カリウム被膜は、ニッケルめっき被膜の濡れ性の改善効果にとりわけ優れるので、モリブデン酸錯体を含有する処理液は、モリブデン酸塩としてモリブデン酸ナトリウムまたはモリブデン酸カリウムと、錯化剤としてクエン酸ナトリウムまたはクエン酸カリウムを用いて調製することが望ましい。前述の通り、ニッケルは、亜鉛や鉄などと比較して貴な金属であるので、単にニッケルが関与する酸化還元反応を利用した化成処理では、その表面に化成処理被膜を形成することは非常に困難であり、特許文献1や特許文献2に記載されているような特殊な方法を採らなければならないが、電解還元法によれば、モリブデン酸塩と錯化剤から生成するモリブデン酸錯体が、電解金属めっきのように電解還元反応して錯化剤イオンを後方放電させることで、ニッケルめっき被膜の表面へのモリブデン酸塩の析出が効果的に起こり、その結果として、モリブデン酸塩被膜を優れた密着性をもってニッケルめっき被膜の表面に形成することができるものと考えられる。\n\n【0011】\n\nモリブデン酸錯体を含有する処理液は、水にモリブデン酸塩と錯化剤を溶解することで調製することができる。モリブデン酸塩は、処理液中の濃度が0.01mol/L〜3.0mol/Lとなるように溶解することが望ましい。処理液中の濃度が0.01mol/Lを下回ると、電流効率が著しく低下することで処理中における水素ガスの発生が顕著となって、ニッケルめっき被膜の表面に焦げなどを発生させてしまう恐れがある。一方、処理液中の濃度が3.0mol/Lを上回っても電流効率に変化はなく、生産性の向上を図ることができずにコスト上昇を招くだけといったことになる恐れがある。錯化剤は、処理液中の濃度が0.015mol/L〜5.0mol/Lとなるように溶解することが望ましい。処理液中の濃度が0.015mol/Lを下回ると、モリブデン酸イオンに対して十分に錯体形成することができないことで、処理液の安定性が低下し、ニッケルめっき被膜の表面にモリブデン酸塩被膜を安定に、かつ、優れた密着性でもって形成することができない恐れがある。一方、処理液中の濃度が5.0mol/Lを上回ると、電流効率が低下するといった問題が生じる恐れがある。\n\n【0012】\n\n処理液は、必要であれば硫酸などを用いてpHを2.0〜9.0に調製することが望ましい。pHが2.0を下回ると、ニッケルめっき被膜の表面へのモリブデン酸塩被膜の電着速度が速すぎてその膜厚制御が困難になり、表面ムラなどを発生させてしまう恐れがあることに加え、物品が希土類系永久磁石の場合には、磁石の磁気特性が酸化腐食により劣化する恐れがある。一方、pHが9.0を上回ると、モリブデン酸錯体が生成せずに、電解還元反応が起こらない恐れがある。\n\n【0013】\n\n処理液は、液温を20℃〜70℃にして用いることが望ましい。液温が20℃を下回ると、電解還元反応が効率よく起こらない恐れがある。一方、液温が70℃を上回ると、ニッケルめっき被膜の表面へのモリブデン酸塩被膜の電着速度が速すぎてその膜厚制御が困難になり、表面ムラなどを発生させてしまう恐れがあることに加え、処理液の管理や連続操業が困難になる恐れがある。\n\n【0014】\n\nなお、処理液には、導電性を向上させることを目的として、硫酸ナトリウムや硫酸カリウムなどの硫酸アルカリ金属塩を、処理液中の濃度が0.05mol/L〜2.0mol/Lとなるように溶解することが望ましく、0.1mol/L〜1.0mol/Lとなるように溶解することがより望ましい。処理液中の濃度が0.05mol/Lを下回ると、導電性の向上を図ることができない恐れがある。一方、処理液中の濃度が2.0mol/Lを上回っても導電性に変化はなく、生産性の向上を図ることができずにコスト上昇を招くだけといったことになる恐れがある。\n\n【0015】\n\n電解還元法によるニッケルめっき被膜の表面へのモリブデン酸塩被膜の電着形成は、電流密度を0.1mA/cm2〜30mA/cm2にして行うことが望ましい。電流密度が0.1mA/cm2を下回ると、電解還元反応が効率よく起こらない恐れがある。一方、電流密度が30mA/cm2を上回ると、処理中における水素ガスの発生が顕著となって、ニッケルめっき被膜の表面に焦げなどを発生させてしまう恐れがある。なお、処理時間は、ニッケルめっき被膜の表面へのモリブデン酸塩被膜の付着量にもよるが、概ね、60秒〜600秒である。\n\n【0016】\n\nニッケルめっき被膜の表面へのモリブデン酸塩被膜の付着量は、膜厚として0.005μm〜1μmであることが望ましい。付着量が膜厚として0.005μmを下回ると、ニッケルめっき被膜の濡れ性の改善効果が得られない恐れがある。一方、付着量が膜厚として1μmを上回ると、モリブデン酸塩被膜にクラックが生じてその機能を果たさない恐れがある。\n\n【実施例】\n\n【0017】\n\n以下、本発明を実施例と比較例によってさらに詳細に説明するが、本発明はこれに限定して解釈されるものではない。なお、以下の実施例と比較例は、例えば、米国特許4770723号公報や米国特許4792368号公報に記載されているようにして、公知の鋳造インゴットを粉砕し、微粉砕後に成形、焼結、熱処理、表面加工を行うことによって得られた14Nd-79Fe-6B-1Co組成(at%)の縦40mm×横20mm×高さ2mm寸法の板状焼結磁石(以下、磁石体試験片と称する)を用いて行った。\n\n【0018】\n\nA:ニッケルめっき被膜を介してモリブデン酸塩被膜を表面に有する磁石体試験片の製造\n\n(工程1)\n\n磁石体試験片を硝酸ナトリウム0.2mol/Lと硫酸1.5vol%を含んだ液温30℃の酸洗液に4分間浸漬し、その表面を酸洗した後、水洗し、以下の条件で磁石体試験片の表面に膜厚3μm(n=10の平均値)の第1ニッケルめっき被膜を形成した。\n\n【0019】\n\n液組成      硫酸ニッケル·6水和物            130g/L\n\nクエン酸二アンモニウム              50g/L\n\nホウ酸                              15g/L\n\n塩化アンモニウム                    15g/L\n\nサッカリン                            8g/L\n\n液温        50℃\n\npH        6.5(アンモニア水で調整)\n\n電流密度    0.2A/dm2\n\n処理時間    20分\n\n【0020】\n\n(工程2)\n\n次に、以下の条件で第1ニッケルめっき被膜の表面に膜厚10μm(n=10の平均値)の第2ニッケルめっき被膜を形成した後、水洗した。\n\n【0021】\n\n液組成      硫酸ニッケル·6水和物            300g/L\n\n塩化ニッケル·6水和物              45g/L\n\nホウ酸                              50g/L\n\n2-ブチン-1,4-ジオール          0.2g/L\n\nラウリル硫酸ナトリウム                1g/L\n\n液温        50℃\n\npH        4.2(塩基性炭酸ニッケルで調整)\n\n電流密度    0.2A/dm2\n\n処理時間    140分\n\n【0022】\n\n(工程3)\n\n次に、工程1と工程2を行うことで得た、表面に積層ニッケル被膜を有する磁石体試験片を再度水洗し、続いて、以下の条件で電解還元法により第2ニッケルめっき被膜の表面にモリブデン酸ナトリウム被膜を電着して形成した後、水洗し、エアワイピングし、70℃で10分間乾燥することで、積層ニッケルめっき被膜を介してモリブデン酸ナトリウム被膜を表面に有する磁石体試験片(以下、サンプルと称する)を得た。なお、乾燥処理の前後で外観の変化は認められなかった。\n\n【0023】\n\n液組成      モリブデン酸ナトリウム·2水和物      0.1mol/L\n\nクエン酸三ナトリウム·2水和物        0.1mol/L\n\n硫酸ナトリウム                        0.2mol/L\n\n液温        40℃\n\npH        5.0(硫酸で調整)\n\n電流密度    表1に記載\n\n処理時間    表1に記載\n\n【0024】\n\nB:ニッケルめっき被膜の濡れ性の評価\n\nサンプルに対し、60℃×90%RHの耐湿試験を行い、試験開始前と、開始後20分,1時間,4時間における濡れ性の評価を、サンプルの表面にJIS  K  6768の濡れ張力試験液(45dyne/cm,40dyne/cm,35dyne/cm)をガラス棒につけて滴下することで行った。結果を表1に示す(実施例1と実施例2)。また、表面に積層ニッケル被膜を有する磁石体試験片に対し、同様の濡れ性の評価を行った結果を比較例として表1に示す。\n\n【0025】\n\n【表1】\n\n\n\n【0026】\n\n表1から明らかなように、ニッケルめっき被膜の表面にモリブデン酸ナトリウム被膜を形成することで、その濡れ性を改善することができることがわかった。\n\n【産業上の利用可能性】\n\n【0027】\n\n本発明は、希土類系永久磁石をはじめとする各種の物品の表面に形成したニッケルめっき被膜の濡れ性を、環境に優しく簡便に改善する方法を提供することができる点において産業上の利用可能性を有する。', '【技术领域】\n\n【0001】\n\n本发明涉及一种改善在各种制品表面上形成的镀镍膜的润湿性的方法,包括稀土基永磁体的各种制品的表面。\n\n发明背景\n\n【0002】\n\n由ND-Fe-B永磁体和稀土的永磁体表示的基于R-Fe-B的永磁体如SM-Fe-N永磁体代表的R-Fe-N永磁体是资源,因为丰富而廉价使用材料并具有高磁性,R-Fe-B永磁体特别用于当今各个领域。然而,由于稀土基永磁体含有反应性稀土元素:R,在大气中易于腐蚀,并且当使用时,在没有任何表面处理的情况下,轻微的酸,碱和水分等腐蚀。腐蚀从表面进行进行,导致腐蚀锈,以及它,它导致磁体特性的恶化和变化。此外,如果锈生成的磁铁被结合到诸如磁路的装置中,则锈蚀可以散射到污染的外围部件。鉴于上述点,广泛采用了一种形成镀镍膜作为在稀土基永磁体的表面上具有优异耐腐蚀性的涂层的方法。然而,当在表面上掺入具有镍镀层的稀土基永磁体进入部分(例如电动机或电子元件)时,在镍电镀涂层和部件之间需要通过粘合剂的强粘附。尽管如此,由于镀镍膜不如耐润湿性,与铝气相沉积膜等相比,可以置于润湿性,可以被认为是获取强粘附膜等的第一条件,因此可能发生诸如粘合的问题。\n\n【0003】\n\n作为解决上述问题的方法,考虑了一种在镀镍膜的表面上形成化学转化处理膜的方法,以改善镀镍膜的润湿性。然而,由于与锌,铁等相比,镍是一种贵金属,因此简单地使用涉及镍的氧化还原反应,非常难以在表面上形成化学转化处理涂层。因此,考虑到这种情况,作为在镀镍膜的表面上形成化学转化处理膜的方法,在专利文献1中提出了一种在镀镍膜的表面上形成铬酸盐涂层的方法文献2,提出了一种形成磷酸锌薄膜的方法,在镀镍膜的表面上。\n\n[专利文献1]日本专利申请公开5-198414号\n\n[专利文献2]日本专利申请公开号6-318512\n\n发明的描述\n\n本发明要解决的问题\n\n【0004】\n\n在任何上述专利文献中提出的方法也是优异的,因为可以改善镀镍膜的润湿性。然而,在专利文献1中提出的方法中,必须使用含有六靶铬的处理溶液,希望考虑环境和人体的影响以及专利中提出的方法文件2然后镀镍膜\n\n为了在镀镍膜的表面上形成磷酸锌涂层,通过镀镍涂层的表面不足,使得反应性高,并且反应性高,并且较差的处理液是用镍。有必要蚀刻镀膜的表面。因此,两种方法在实际方面都不一定令人满意,因此需要一种新方法来改善镀镍涂层的润湿性。\n\n因此,本发明的目的是提供一种易于改善在诸如稀土永磁体的各种制品表面上形成的镀镍膜的润湿性的方法。\n\n[解决问题的手段]\n\n【0005】\n\n由于鉴于上述几点进行了密集的研究,我发现镀镍膜的润湿性可以容易地改善它。\n\n【0006】\n\n2.根据权利要求1所述的方法,其特征在于,所述基于上述研究结果的所述本发明制品的表面上形成的镀镍膜的润湿性如权利要求1所述。将表面上具有镀镍涂层的制品浸入含有钼酸复合物的处理液中,并通过电解还原方法镍镀层表面上的钼酸盐涂层电沉积它的特征在于形成它。\n\n3.根据权利要求2所述的方法的特征在于,在权利要求1的方法中,钼酸盐涂层是钠或钼酸涂层。\n\n4.根据权利要求3所述的方法,其特征在于,在根据权利要求1或2的方法中,镍镀膜表面上的钼酸盐涂层的粘附量为0.005μm至1μm,为膜厚度。。\n\n魔鬼索赔4描述的方法是1在所述方法中,含钼酸复合物的处理溶液是钼酸盐,柠檬酸盐,乙酸盐,琥珀酸盐,丙二酸盐,塔尔塔酸盐,至少一种选自酒石酸盐的葡萄糖酸盐。其特征在于使用该试剂制备。\n\n还,5描述的方法是4在所述方法中,使用钼酸钠或钼酸钾作为钼酸钠或钼酸钾制备含钼酸复合物的处理溶液,以及使用柠檬酸钠或柠檬酸钾柠檬酸钾。\n\n还,6描述的方法是1要么5在根据任何方法的方法中,含有钼酸复合物的处理液的特征在于还含有碱金属盐。\n\n还,7如权利要求1至1所述的方法6在根据任何方法的方法中,其特征在于该物品是稀土的永磁体。\n\n魔鬼具有改进本发明的镀镍涂层润湿性的制品的制造方法8如上所述,将表面上的镀镍膜的制品浸入含有钼酸复合物的处理液中,并且通过电解还原方法的电沉积来表征电解方法并在镍镀膜表面上形成钼酸盐涂层。它将是。\n\n【发明效果】\n\n【0007】\n\n根据本发明,可以提供一种易于改善在诸如稀土永磁体的各种制品表面上形成的镀镍膜的润湿性的方法。\n\n实施本发明的最佳方式\n\n【0008】\n\n作为应用本发明的制品,可以提及稀土基永磁体作为具体示例\n\n然而,只要需要在表面上形成的镀镍膜中优异的润湿性即可使用任何物品。\n\n【0009】\n\n在制品的表面上形成的镀镍膜可以以任何方式形成,包括本身已知的电解镍镀层。另外,镍镀膜可以直接形成在制品的表面上,或者可以通过另一涂层间接地形成。\n\n【0010】\n\n在镍涂层的表面上形成的钼酸盐涂层的实例包括钼酸锂涂层,钼酸钠涂层或钼酸盐碱金属膜,例如钼酸钾薄膜。镍镀层表面上的钼酸盐涂层的形成是例如浸入钼酸复合物表面上具有镍镀层的制品,并通过电解还原方法在镀镍涂层表面上的钼。它可以通过酸盐膜的电沉积来完成。含有钼酸配合物的加工溶液可以使用钼酸盐如碱金属钼酸盐和络合剂制备。络合剂的实例包括柠檬酸盐,乙酸盐,琥珀酸盐,亚隆,酒石酸盐,葡萄糖酸盐(碱金属盐等)。由于钼酸钠涂层或钼酸钾薄膜在镍镀膜的润湿性的改善效果中特别优异,因此含钼酸复合物的处理溶液是钼酸盐或钼酸钾或钼酸钾和钼酸钾。它是可取的使用柠檬酸钠或柠檬酸钾作为混合物制备。如上所述,与锌,铁等相比,镍是贵金属,因此在表面上形成化学转化处理涂层是非常重要的,作为使用仅涉及镍的氧化还原反应的化学转化处理。虽然难以采用专利文献1和专利文献2中所述的特殊方法,但是根据电解还原方法,由钼酸盐和络合剂制备的钼酸复合物是通过反应反应作为电解金属电镀,然后向后排出络合剂离子,钼酸盐在镀镍膜表面上的沉淀有效地发生,结果,钼酸盐涂层优异。认为它可以形成在镀镍膜的表面上具有粘附性的表面。\n\n【0011】\n\n含钼酸配合物的处理溶液可以通过将钼酸盐和络合剂溶解在水中来制备。优选溶解钼酸盐,使得处理溶液中的浓度为0.01mol / L至3.0mol / L.当处理液中的浓度小于0.01mol / L时,处理过程中的氢气产生显着,并且使镀镍膜的表面产生。是。另一方面,即使处理液中的浓度超过3.0mol / L,电流效率也没有变化,并且可能无法提高生产率而不会增加成本。期望将络合剂溶解在处理液中,以0.015mol / L至5.0mol / L.当处理溶液中的浓度小于0.015mol / L时,处理溶液的稳定性降低了它不能充分络合到钼酸离子,以及镀镍涂层表面上的钼酸盐涂层薄膜存在风险,即不能稳定地形成并且具有优异的附着力。另一方面,当处理液中的浓度高于5.0mol / L时,存在电流效率降低的风险。\n\n【0012】\n\n如果需要,使用硫酸等,优选用pH制备2.0至9.0至9.0至9.0。当pH下降到2.0以下时,镍镀膜表面上的钼酸盐涂层的电沉积速率太快,以使膜厚度控制,并且在稀土的情况下可能发生表面不均匀性等。永磁体,磁体的磁性可以通过氧化腐蚀来降解。另一方面,当pH超过9.0时,不产生电解还原反应而不产生钼酸配合物。\n\n【0013】\n\n理想的是,处理液将在20℃至70℃下使用液体温度。当液体温度低于20℃时,电解还原反应可能不会有效地发生。另一方面,当液体温度超过70℃时,镍镀膜表面上的钼酸盐涂层的电沉积速率太快,膜厚度控制变得困难,并且可以产生表面不均匀性。在除此之外,处理液体的管理可能难以管理和连续运行。\n\n【0014】\n\n此外,通过提高导电性,碱金属盐如硫酸钠和硫酸钾溶解,使得处理液中的浓度为0.05mol / l至2.0mol / L.优选地,希望溶解如下为0.1mol / l至1.0mol / l。如果处理液中的浓度小于0.05mol / L,则可能无法提高电导率。另一方面,即使处理液中的浓度超过2.0mol / L,也没有导电性的变化,并且只能提高生产率,并且只能实现成本增加。\n\n【0015】\n\n通过电解还原方法对镍镀层表面上的钼酸盐涂层的电沉积形成为0.1mA / cm,用于电流密度。2〜30mA / cm2是可取的。电流密度为0.1 mA / cm2如果下降,则可能不会有效地发生电解还原反应。同时,电流密度为30 mA / cm2另外,处理期间的氢气可能是显着的,这可能是显着的,这可能导致镀镍膜的表面燃烧或更高。处理时间取决于镍镀膜表面上的钼酸盐涂层的粘附量,但通常为60秒至600秒。\n\n【0016】\n\n镍镀层表面上的钼酸盐涂层的粘附量优选为膜厚度为0.005μm至1μm。如果粘合量小于0.005μm作为膜厚度,则不能获得镀镍膜的润湿性的提高效果。另一方面,如果粘合剂厚度超过1μm,则钼酸盐涂层中可能发生裂缝,并且存在功能不起的风险。\n\n【例子】\n\n【0017】\n\n在下文中,将通过实施例和比较例更详细地描述本发明,但是本发明不限于此。在以下实施例和比较例中,如美国专利No.4,522,517中所述,在细磨后,已知的铸造锭被粉碎,烧结,热处理,例如,如美国专利No.美国专利号4,770,723和美国专利No.4,792,368。美国专利号4,792,368.40毫米14nd-79fe-6b通过在使用的表面处理(以%)12mm宽的板状烧结磁体(下文中称为磁体样本)而获得的-1CO组合物(以%)。\n\n【0018】\n\n- 答:通过镍电镀涂层在表面上用钼酸盐涂层生产磁铁标本\n\n(第1步)\n\n将磁铁型试验片浸入液体温度为30℃的酸洗中,用0.2mol / L硝酸钠和1.5体积%的硫酸4分钟,然后酸洗表面的表面,用水和磁体在下面的条件下,在试验片的表面上形成3μm的第一镍镀膜(平均值N = 10)。\n\n【0019】\n\n水合物130g / L液体组合物硫酸盐\n\n二硫铵柠檬酸盐50克/升\n\n15克/天硼酸\n\n氯化铵15克/升\n\nSaccharin 8G / L.\n\n液体温度50°C\n\npH 6.5(用氨水调节)\n\n电流密度0.2A / DM2\n\n处理时间20分钟\n\n【0020】\n\n(第2步)\n\n接下来,在第一镍镀膜的表面下在下列条件下形成膜厚度为10μm的第二镍镀膜(N = 10的平均值),然后用水洗涤。\n\n【0021】\n\n液体成分镍6水合物300克/升\n\n氯化镍6水合物45克/升\n\n50克/天硼酸\n\n2-utin-1,4-二醇0.2 g / l\n\n月晶硫酸钠1克/升\n\n液体温度50°C\n\npH 4.2(由碱性镍碳酸镍调整)\n\n电流密度0.2A / DM2\n\n处理时间140分钟\n\n【0022】\n\n(步骤3)\n\n接下来,通过表面上的层压镍涂层再次用层叠镍涂层洗涤具有层压镍涂层的磁体样品,然后通过电解还原方法在下列条件下通过电解还原方法在第二镍镀膜的表面上洗涤。形成钼酸钠薄膜后,洗涤水,在7​​0℃下搅拌并在70℃下干燥10分钟,通过层压镍镀膜(下文称为样品,在表面上具有钼酸钠膜的磁体样品。注意,在干燥过程之前和之后没有观察到外观的变化。\n\n【0023】\n\n钠形成钼酸盐·2水合物0.1 mol / l\n\n三个柠檬酸钠·2水合物0.1 mol / L.\n\n硫酸钠0.2 mol / l\n\nH16°C.\n\npH 5.0(用硫酸调节)\n\n表1中列出的当前密度\n\n处理时间表1\n\n【0024】\n\nB:镀镍涂层润湿性评估\n\n在样品上进行60℃×90%RH的防潮试验,并在试验开始之前,在开始后20分钟,1小时和4小时的润湿性润湿性,JIS的润湿试验溶液通过逐滴加入玻璃棒,通过滴加玻璃棒进行样品表面上的K 6768。(45达因/厘米,40达因/厘米,35达因/厘米)。结果如表1所示(实施例1和实施例2)。此外,评估相同润湿性的结果在表1中示出为相对于具有在表面上具有层压镍涂层的磁体试验片的比较例。\n\n【0025】\n\n【表格1】\n\n\n\n【0026】\n\n从表1中可以清楚地看出,发现通过在镀镍涂层的表面上形成钼酸钠薄膜,可以提高润湿性。\n\n【工业可用性】\n\n【0027】\n\n本发明可以提供工业可用性,因为可以提供在诸如稀土永磁体的各种制品表面上形成的镀镍膜的润湿性,以改善环保且易于改进。');
INSERT INTO `os_patent_instruction_text` VALUES (13028, 22857, '【技術分野】\n\n【0001】\n\n本発明は、焼結磁石の製造方法に関する。\n\n【背景技術】\n\n【0002】\n\n希土類焼結磁石は、希土類磁石用合金(原料合金)を粉砕して形成した合金粉末をプレス成形した後、焼結工程、時効熱処理工程、および加工工程などを経て作製される。現在、希土類焼結磁石としては、希土類·コバルト系磁石と希土類·鉄·ホウ素系磁石の二種類が各分野で広く用いられている。なかでも希土類·鉄·ホウ素系磁石(以下、「R-Fe-B系磁石」と称する。Rは希土類元素およびイットリウムからなる群から選択された少なくとも1種の元素、Feは鉄、Bはホウ素である)は、種々の磁石の中で最も高い磁気エネルギー積を示し、価格も比較的安いため、各種電子機器へ積極的に採用されている。なお、Feの一部は、Coなどの遷移金属元素と置換されていても良い。また、ホウ素の半分までは炭素で置換されていても良い。\n\n【0003】\n\n所望の形状を有する焼結磁石を作製するには、まず、R-Fe-B系希土類磁石粉末をプレス装置で圧縮成形することにより、最終的な磁石製品よりも大きいサイズの成形体を作製する。そして、成形体を焼結工程によって焼結体にした後、超硬合金製ブレードソーまたは回転砥石などによって焼結体を研削加工し、所望の形状を付与することが行われている。例えば、まずブロック形状を有する焼結体を作製した後、その焼結体をブレードソーなどでスライスすることによって複数のプレート状焼結体部分を切り出すことが行われている。\n\n【0004】\n\nしかしながら、R-Fe-B系磁石などの希土類合金磁石の焼結体は極めて硬くて脆い上に、加工負荷が大きいため、高精度の研削加工は困難な作業であり、加工時間が長くかかる。このため、加工工程が製造コスト増加の重要な原因となっている。\n\n【0005】\n\nこのような問題を解決するため、焼結前の成形体(グリーン)を研削加工することが提案されている(特許文献1および特許文献2)。\n\n【0006】\n\n上記の特許文献1は、弓形フェライト磁石用成形体を回転砥石や回転ブラシで面取りする技術を開示している。この技術を酸化反応性の高いR-Fe-B系磁石用の粉末成形体に適用すると、回転砥石や回転ブラシと成形体との間で摩擦熱が発生するため、成形体中の希土類元素や鉄が大気雰囲気中の酸素や水分と急激に反応し、最悪の場合、成形体の発火が生じるおそれがあり、そのような事態に陥らない場合でも磁石の磁気特性が劣化してしまうことになる。\n\n【0007】\n\n特許文献2は、グリーン加工時における成形体の酸化を防止するため、鉱物油、合成油、または植物油中に成形体を浸漬し、その状態の成形体を回転する加工刃で切断加工する技術を開示している。\n\n【0008】\n\nしかし、この特許文献2に記載されている技術によれば、切断後、焼結前に成形体から鉱物油などを除去する脱脂工程が不可欠であり、脱脂が不十分な場合、油に含まれる炭素が焼結過程で不純物として機能し、磁石特性を劣化させてしまう。\n\n【0009】\n\nまた、上記のブレードソーなどを用いた加工方法による場合、成形体の切断代が大きく、材料の歩留まりが悪いという問題もある。\n\n【0010】\n\nこのような問題を解決するため、ワイヤソーで成形体を切断加工する技術が特許文献3に記載されている。特許文献3に開示されている方法によれば、焼結前の比較的やわらかい状態の成形体を細いワイヤソーで切断加工するため、加工負荷を低減し、加工時における成形体の発熱を抑制することができる。このため、酸化しやすい磁石粉末を用いて磁石を製造する場合でも、最終的な磁石特性を劣化させることなく、加工のための時間を大幅に短縮できる。\n\n【特許文献1】特開平8-64451号公報\n\n【特許文献2】特開平8-181028号公報\n\n【特許文献3】特開2003-303728号公報\n\n【発明の開示】\n\n【発明が解決しようとする課題】\n\n【0011】\n\n特許文献3に記載されている技術による場合、切断加工によって作製した複数の板状部分(切断された成形体)を個々に分離してから焼結工程を行なうことが必要なる。しかし、成形体の板状部分の切断面が焼結前の柔らかい状態にあるため、隣接する板状部分の切断面と接触して相互に離れにくくなるという問題がある。このように、スライスされた複数の板状成形体が相互に固着した状態になると、焼結工程のために個々の板状成形体をロボットアームなど把持して焼結用プレートなどに搬送するとき、大きな力を加えなければ板状成形体を剥離することができず、成形体に割れや欠けが発生する可能性がある。\n\n【0012】\n\n本発明はかかる諸点に鑑みてなされたものであり、その主な目的は、焼結前の成形体をワイヤソーで切断する場合において、成形体の割れや欠けの発生を抑えたハンドリングを可能とすることにより、製造歩留まりが向上した焼結磁石の製造方法を提供することにある。\n\n【課題を解決するための手段】\n\n【0013】\n\n本発明の焼結磁石の製造方法は、磁石粉末の成形体を作製する工程(A)と、ワイヤソーを用いて前記成形体を複数の板状部分に切断加工し、前記複数の板状部分が切断面に垂直な方向に配列された状態を形成する工程(B)と、前記成形体の板状部分を焼結する工程(C)とを包含する焼結磁石の製造方法であって、前記工程(B)は、前記複数の板状部分の少なくとも1つの位置を前記切断面に平行な方向にずらす工程(b)を含んでいる。\n\n【0014】\n\n好ましい実施形態において、前記工程(b)は、前記複数の板状部分の位置を交互に反対方向にシフトさせる工程を含んでいる。\n\n【0015】\n\n好ましい実施形態において、前記工程(b)は、前記複数の板状部分の各々の厚さに対応した幅を有する凸部で個々の板状部分を交互に反対方向に押圧する工程を含んでいる。\n\n【0016】\n\n好ましい実施形態において、前記工程(b)は、前記凸部で個々の板状部分を交互に反対方向に押圧するとき、前記板状部分の切断面を摩擦によって平滑化する工程を含んでいる。\n\n【0017】\n\n好ましい実施形態において、前記工程(B)と前記工程(C)との間において、前記複数の板状部分が切断面を介して鉛直方向に積層された状態となるように前記板状部分の向きを回転させる工程(D)を更に含む。\n\n【0018】\n\n好ましい実施形態において、前記ワイヤソーは、0.05mm以上3.0mm以下の外径を有するワイヤと、前記ワイヤに固定された砥粒とを有している。\n\n【0019】\n\n好ましい実施形態において、前記磁石粉末は、R-T-B系希土類合金(Rは希土類元素およびイットリウムからなる群から選択された少なくとも1種の元素、Tは鉄を必ず含む遷移金属元素、Bはホウ素である)の粉末である。\n\n【0020】\n\nワイヤソー装置は、磁石粉末の成形体を複数の板状部分に切断加工するワイヤと、前記複数の板状部分が切断面に垂直な方向に配列された状態で前記複数の板状部分の少なくとも1つの位置を前記切断面に平行な方向にずらす押圧部材とを備えている。\n\n【0021】\n\n好ましい実施形態において、前記押圧部材は、前記複数の板状部分を把持する1対の押圧部を有しており、各押圧部は、前記複数の板状部分を1つ置きに押圧するように周期的に配列された複数の突出部を有しており、一方の押圧部の突出部の位置は他方の押圧部の突出部の位置に対して配列の2分の1周期だけシフトしている。\n\n【0022】\n\n好ましい実施形態において、前記押圧部材を駆動する駆動部を備え、前記駆動部は、前記1対の押圧部を前記切断面に平行な方向に駆動し、前記複数の板状部分を把持し、前記複数の板状部分の位置を交互にシフトさせた後、前記複数の板状部分の各切断面が水平となるよう前記複数の板状部分を全体として回転させる。\n\n【発明の効果】\n\n【0023】\n\n本発明によれば、ワイヤソーで焼結前の成形体(グリーン)を複数の板状部分に切断加工した後、板状部分を切断面に沿って交互に平行に移動させることにより、切断面を平滑化するとともに、相互固着を抑制することができる。その結果、切断された個々の板状部分をスムーズに引き離すことができ、次の焼結工程へ速やかに移行できる。\n\n【0024】\n\nまた、本発明によれば、焼結前の比較的柔らかい状態の成形体を細いワイヤソーで加工\n\nするため、加工負荷が小さく、成形体の発熱を抑えることができるため、酸化しやすい磁石粉末を用いて磁石を製造する場合でも、最終的な磁石特性を劣化させることなく、加工のための時間を大幅に短縮でき、製造コストを大きく低減することができる。\n\n【発明を実施するための最良の形態】\n\n【0025】\n\n本発明では、まず、磁石粉末の成形体(グリーン)を焼結前にワイヤソーによって切断し、複数の板状部分(以下、「プレート状切断グリーン」と称する)に分離する。ワイヤソーとは、一方向または双方向に走行するワイヤを、加工すべき成形体に押し付け、ワイヤと成形体との間にある砥粒によって成形体を加工する技術であるが、その詳細については、後述する。ここでは、まず、図1を参照しながら、ワイヤソーによって板状部分に分割された成形体に対する処理を説明する。\n\n【0026】\n\n図1(a)は、ワイヤソー装置による成形体の切断加工を示している。走行するワイヤにより、ブロック状の成形体1が図1(b)に示すようにプレート状切断グリーン1a、1b、1c、1dに分割される。図1では、簡単のため、1つのブロック状成形体1から4つのプレート状グリーン1a〜1dが作製されているが、更に多くのプレート状グリーンが作製されても良い。その後、本発明の好ましい実施形態では、図1(c)に示す構造を有する一対の押圧部10a、10bを備えた押圧部材により、成形体1を把持する。各押圧部10a、10bは、複数のプレート状切断グリーン1a、1bを1つ置きに押圧するように周期的に配列された複数の突出部を有している。そして、一方の押圧部の突出部の位置は、他方の押圧部の突出部の位置に対して配列の2分の1周期だけシフトしている。このため、押圧部材で成形体を把持するとき、図1(d)に示すように、複数のプレート状切断グリーンの位置が交互にシフトすることになる。\n\n【0027】\n\nワイヤソーによって形成された成形体1の切断面には、微小な凹凸が存在するため、隣接するプレート状切断グリーンの間で双方の切断面が接触すると、容易に分離できなくなり、割れや欠けが生じるおそれがある。しかし、本発明の好ましい実施形態で行なうように、切断直後のプレート状切断グリーンを交互にシフトすると、切断面どうしの摩擦により、微小な凹凸が平滑化されるため、プレート状切断グリーンを引き離しやすくなる。また、本発明によれば、切断面が摩擦によって平滑化されるため、切断面で露出する希土類磁石粉末の表面積が減少し、成形体(希土類磁石粉末)の酸化を効果的に抑制する効果も得られる。\n\n【0028】\n\n次に、押圧部10a、10bで把持しながら成形体1を回動させ、複数のプレート状切断グリーン1a〜1dを積層した状態で作業台上に配置する。図1(e)は、積層したプレート状切断グリーン1a〜1dを、上から順番に焼結台板上へ載置しつつある様子を示している。\n\n【0029】\n\n上記の一連の工程によれば、プレート状切断グリーン1a〜1dを押圧部材10a、10bにより切断面に沿って交互に平行に移動させることにより、切断面を平滑化するととも、相互固着を抑制することができる。その結果、図1(e)に示すように、プレート状切断グリーン1a〜1dをスムーズに引き離すことができる。\n\n【0030】\n\nもしも、図1(c)および(d)に示すようにして各プレート状切断グリーンを切断面に沿って交互に平行に移動させなかったならば、図1(e)に示す工程において、例えばプレート状切断グリーン1bを持ち上げたとき、その下のプレート状切断グリーン1cも固着したまま持ち上げられ、搬送中に落下したり、積層された状態で焼結台板上に配置される危険性がある。\n\n【0031】\n\n図2(a)は、ワイヤソーによる切断直後における成形体1を示す斜視図であり、図2\n\n(b)は、切断面に沿って交互にプレート状切断グリーン1a〜1dがスライドした状態を示す斜視図である。\n\n【0032】\n\n図3(a)は、ワイヤソーによる切断直後における成形体1を示す上面図であり、図3(b)は、押圧部10a、10bによって成形体1が押圧されつつある状態を示す上面図である。押圧部10a、10bの対向面には、プレート状切断グリーン1a〜1dの各々の厚さに略等しい幅を持った複数の突出部100が周期的に形成されている。この突出部100は、図の紙面に垂直な方向に延びており、突出部100の高さ(突出量)は、切断グリーン1a〜1dのシフト量を規定する。図3(c)は、押圧部10a、10bを90度だけ回転させることにより、プレート状切断グリーン1a〜1dの側面が紙面に平行になった状態を示す上面図である。図では、プレート状切断グリーン1aの側面が正面となる例が示されている。図3(d)は、押圧部10a、10bを成形体1から離間した状態を示す上面図である。図3(d)に示す状態では、プレート状切断グリーン1a〜1dが積層されており、この状態で作業台などの上に置かれる(図1(e)参照)。\n\n【0033】\n\n図3(a)〜(d)に示す押圧部10a、10bは、プレート状切断グリーン1a〜1dの各々の厚さに略等しい幅を持った複数の突出部を有しているが、押圧部10a、10bは、このような構造を有するものに限定されない。図4(a)は、プレート状切断グリーン1a〜1dの厚さよりも小さな突出部200を有する押圧部20a、20bを示している。また、図4(b)は、周期的に配列された複数の溝を有する押圧部30a、30bを示している。図4(b)に示す例では、押圧部30a、30bの溝が形成されている側の面において溝が形成されていない領域が、突出部として機能することになる。\n\n【0034】\n\n本発明の好ましい実施形態では、ワイヤソーに際して、表面に砥粒が固着されたワイヤを用いる。ワイヤ芯線は、引っ張り強度の高い材料から形成されることが好ましく、例えば、硬鋼線(ピアノ線)、Ni-CrやFe-Niなどの合金、WやMoなどの高融点金属、またはポリアミド系繊維を束ねたものから形成される。また、ワイヤが太すぎると、切断代が大きくなるため、材料の歩留まりが低下してしまう。逆にワイヤが細すぎると、加工負荷によってワイヤが切断してしまうおそれがある。さらに、切断抵抗を増加させるため、発熱·発火の原因となる。このため、本発明で用いるワイヤの外径は、0.05mm以上3.0mm以下に設定されることが好ましい。より好ましいワイヤの外径は、0.1mm以上1.0mm以下である。なお、ここでいうワイヤソーとは、切込方向における幅が3.0mm以下の切断手段を広く意味し、例えば、この幅が3.0mm以下のバンドソー等を含むものとする。\n\n【0035】\n\n一方、砥粒はダイヤモンド、SiC、またはアルミナなどの高硬度材料から形成されていることが好ましく、その粒径は、典型的には10μm以上100μm以下である。砥粒は、樹脂膜などの結合層によってワイヤ芯線の表面に固着されていることが好ましい。樹脂膜としては、フェノール樹脂、エポキシ樹脂やポリイミド樹脂を用いることができる。樹脂膜の厚さは、0.02mm〜1.0mm程度である。\n\n【0036】\n\nなお、結合層として樹脂膜の代わりに金属膜などを用いて砥粒を固着してもよい。例えば、電着法(電気めっき法)によって砥粒を固着したワイヤ(「電着砥粒ワイヤ」と呼ばれることがある。)は、樹脂層で砥粒を固着したワイヤよりも砥粒の突き出し量(砥粒が結合層の表面から突出している部分の高さ)を大きく出来るので、切削屑(切り粉またはスラッジ)の排出性に優れるので好ましい。また、十分な強度が得られるのであれば、拠り線を用いてもよい。拠り線を用いると切削屑の排出性をさらに向上することが出来る。なお、後述するように、切削屑の排出性を高めるために切削液を用いる場合には、切削液に対する耐性の観点からも、電着砥粒ワイヤを用いることが好ましい。\n\n【0037】\n\n砥粒の平均粒径Dは、切削効率の観点から、30μm≦D≦1000μmの関係を満足することが好ましく、特に、40μm≦D≦200μmの関係を満足することが好ましい。また、切削効率と切削屑の排出効率の観点からは、ワイヤソーの走行方向における、互いに隣接する砥粒間の平均距離は砥粒の平均粒径Dの200〜600%の範囲内にあることが好ましく、且つ、突き出し量は、15μm〜500μmの範囲内にあることが好ましい。\n\n【0038】\n\nなお、プレス時に印加する配向磁界によって成形体は磁化される。この磁化を取り除くことを目的として成形体に脱磁処理を施しても、0.001T〜0.1T程度の残磁が存在することになる。残磁をこれよりも小さくすることはできるが、そのためには工程数が増加するので、量産上好ましくない。成形体が残磁を有する結果、成形体をワイヤソーで切断するとき、切断代を小さくすると、切削屑が残磁によって切断面に付着してしまうため、成形体どうしを分離することが困難になる。このような問題を避けるには、0.1mm以上の切断代を設けることが好ましい。\n\n【0039】\n\nまた、砥粒が表面に固着されていないワイヤ(遊離砥粒型ワイヤ)を用いてもよいが、その場合は、砥粒が表面に固着されているワイヤ(固定砥粒型ワイヤ)を用いるよりも切削屑が排出され難く、切断溝(切削溝)内に相対的にたまりやすく、上記の残磁によって切断面に付着する切削屑が増える可能性がある。このため、固定砥粒型ワイヤを用いる方が、成形体どうしを分離しやすく、好ましい。\n\n【0040】\n\n成形体を複数の部分にスライスする場合に成形体どうしを分離しやすくするために、一旦形成された切断面に沿って再度ワイヤソーを相対移動させてもよい。このように切断面に沿って再度ワイヤソーを通過させることによって、成形体どうしの間隙に残存した切削屑が排出され、欠けを発生させることなく、成形体を分離することが可能になる。ワイヤソー切断面に沿って再び通過させるために、1回目の切断によって形成された溝(複数の成形体の間隙)を保持することが好ましい。\n\n【0041】\n\nまた、切断加工工程における切削屑の排出性を向上するために、少なくともワイヤソーの成形体と接触する部分に切削液が付与された状態で成形体を切削加工してもよい。ワイヤソーに切削液を付与することによって、切削屑がワイヤソーに付着しやすくなり、且つ、切削屑(粉)どうしが凝集しやすくなるため、より多くの切削屑がワイヤソーに付着し、切削部から排出される。\n\n【0042】\n\n以下、図面を参照しながら、本発明の実施形態を説明する。\n\n【0043】\n\n(実施形態)\n\n図5は、本実施形態で用いるワイヤソー装置の一構成例を示している。図示されている装置は、加工対象の成形体(グリーン)1を支持し、上下(z軸方向)に駆動する駆動装置2と、複数のロール3a、3b、3c、および3dとを備えている。\n\n【0044】\n\nワイヤソー4は、上述の砥粒がワイヤに固着されたものであり、ロール3a〜3dに巻かれ、y軸に平行な方向に走行する。ワイヤソー4は、x軸方向に等間隔で配列され、その配列間隔(ワイヤピッチ)は、ブロック状の成形体1から切り出す各板状部分のサイズ(厚さ)によって任意に設定される。本発明が好適に適用される用途において、ワイヤピッチは、例えば約1mm以上約30mm以下の範囲内に設定される。\n\n【0045】\n\nワイヤソー4に用いるワイヤの外径は、ワイヤ強度および切断代を考慮すると、0.05mm以上3.0mm以下の範囲内に設定することが好ましい。なお、焼結後の硬い焼結体をワイヤソー4で切断しようとすると、ワイヤには20〜40N程度の張力が印加され\n\nることになる。これに対して、本発明では、焼結前の柔らかい成形体1を加工するため、ワイヤに印加すべき張力も0.1〜10N程度と比較的低くてすむため、切断抵抗が小さく、比較的酸素濃度の高い雰囲気でも発火や酸化の問題なく成形体の切断·加工が可能となる。\n\n【0046】\n\nワイヤソー4には、加工時、イソパラフィンやエチルアルコールなどの有機溶剤を切削液として供給してもよい。ただし、切削液の供給は必須ではないが、後述するように、切削屑の排出性を向上することができる。\n\n【0047】\n\nワイヤソー4のy軸方向速度(vy)を、本明細書では「ワイヤ送り速度」と称することとする。所定のワイヤ送り速度で走行するワイヤソー4に対して成形体1を押し付けることにより、成形体1を切削し、複数の部分に切断·分割(スライス)することができる。成形体1をワイヤ4に押し付けてゆく速度(vz)は、図示されている例では、駆動装置のz軸方向の駆動速度に対応し、これを本明細書では「切込速度」と称することにする。この切込速度が速いほど、加工に要する時間が短縮される。\n\n【0048】\n\nワイヤ送り速度および切込速度は、後述する実施例の説明から明らかなように、加工負荷の値に大きく影響する。加工負荷を実用上適切な範囲に収めるには、切込速度を例えば30mm/min以上1200mm/min以下に設定することが好ましく、30mm/min以上800mm/min以下に設定することが更に好ましい。\n\n【0049】\n\nなお、ワイヤソー4は一定の方向に走行させるだけではなく、y軸方向に沿って往復動作(レシプロカル動作)を行うようにしてもよい。この場合は、例えば複数のワイヤを張った矩形の枠体をエアシリンダなどによってy軸方向に直線的に往復動作させれば良い。また、エアシリンダの代わりに、モータとクランクを組み合わせた装置を採用しても良い。\n\n【0050】\n\n図6は、従来の焼結体を切断する場合と、本発明による焼結前の成形体を切断する場合について、製造工程の違いを説明するフローチャートである。図6に示されるように、従来例では、まず、原料粉末を用意する工程、粉末をプレスする工程、成形体を焼結する工程、焼結体を切断する工程、切断された各焼結体部品に対して表面処理を施す工程などの各工程を行う必要があった。これに対して本発明では、プレス工程の後、焼結工程前に、成形体(グリーン)を切断し、最終磁石製品に近い形状とサイズを持つ成形体部分を作製する。このように本発明では、焼結体よりも著しく柔らかくて加工しやすい状態にある成形体(グリーン)を切断するため、切断加工に要する時間が大幅に短縮される。\n\n【0051】\n\nなお、本発明によれば、ワイヤソーと成形体との接触面積が従来の回転刃などを用いた場合の接触面積に比べて小さく、摩擦による発熱量が極めて少ない。例えば、従来の回転刃の場合、接触面積が1000〜10000mm2程度となるような場合でも、本発明によれば、接触面積を5〜50mm2程度に抑えることができる。このため、大気雰囲気中においてワイヤソー加工を行っても、希土類合金粉末の酸化や発火の問題を充分に回避できる。\n\n【0052】\n\nただし、本発明による場合でも、よりいっそう磁石粉末の酸化を抑制し、高性能の磁石特性を実現するためには、磁石粉末の酸素濃度が重量比率で3000ppmを超える場合には、酸素濃度がモル比で全体の10%以上15%以下に調節された不活性ガス雰囲気中でワイヤソー加工を行うことが好ましい。特に、酸素濃度が重量比率で全体の3000ppm以下となるような低酸素の磁石粉末を用いて成形体を作製する場合は、磁石粉末の酸化反応性が著しく強いため、上記よりも厳しく酸素濃度が制限された環境(例えば酸素濃度がモル比率で2%以下の不活性ガス雰囲気中)でワイヤソー加工を行うことが望ましい\n\n。酸素濃度を上記の範囲内に制御することは、切断加工を行う装置のまわりを部分的に囲えば可能であり、ワイヤソー装置のまわりを大気雰囲気から完全に分離することなく実現できる。このように気体中で成形体を切断する場合には、雰囲気をコントロールすることが好ましい。\n\n【0053】\n\nまた上述のように気体中で乾式成形体を加工する場合には、磁石粉末に対して成形前に固体または液体の潤滑剤(例えば脂肪酸エステル)を添加しておくことが好ましい。粉末表面に形成される潤滑剤の膜によって酸化が防止されるからである。また、成形体を作製した後で、加工前に成形体に潤滑剤を十分にしみこませてもよい。このような潤滑剤は、後の焼結工程において容易に成形体から除去できるものが好ましい。\n\n【0054】\n\nなお、従来の回転刃を用いる場合は、切断代が大きく(例えば幅0.5mm以上)、切削加工部分から切削屑が粉塵化して周囲に飛散することがあった。飛散した切削屑が発火すると、極めて危険である。しかし、本発明によるワイヤソーを用いる場合は、切削屑の飛散を大きく抑制することができるので、安全に作業を行うことができる。\n\n【0055】\n\nまた、ワイヤソー加工は、イソパラフィンに代表される飽和炭化水素系溶剤などの有機溶媒中において実行しても良い。このような有機溶媒中であれば、脱脂が容易であるため、特別の脱脂工程を導入することなく、標準的な焼結プロセスにおいて、成形体中から除去される。このため、有機溶媒中の炭素が焼結磁石の磁気特性を劣化させるという問題も生じない。\n\n【0056】\n\nワイヤソーによる切断加工が終了した後、図1(c)および(d)に示す押圧部10a、10bを用いて成形体1を把持するとともに、切断された各グリーンの位置ずらしを行なう。押圧部10a、10bに押圧されても割れや欠けが生じないように、切断された各グリーンの厚さは、例えば、3mm以上の大きさを有していることが好ましい。また、成形体の強度を高めるため、成形密度は4.0g/cm3以上であることが好ましい。\n\n【0057】\n\nこうして、位置ずらしを行なった後は、図1(d)に示す工程を経て、各切断グリーンの焼結工程を行なった。\n\n【0058】\n\n次に、本発明による上記実施形態の具体的な実施例を説明する。\n\n【0059】\n\n本実施例では、図7に示すように、3列に配置したワイヤソーにより、下方から上昇する成形体(グリーン)を大気雰囲気中で切断した。ワイヤソーのワイヤ外径(線径)は0.24mmとし、ワイヤピッチは5mmとした。加工対象の成形体(グリーン)は、26質量%(Nd+Pr)、5質量%Dy、1質量%B、1質量%Co、0.2質量%Al、0.1質量%Cu、残部Feの合金組成を有する磁石粉末(FSSS粒径:3.0〜3.2μm)を公知のプレス装置を用いて成形したものである。磁界配向させるための印加磁界は1.2T程度とした。成形体は略直方体の形状を有し、そのサイズは高さ15mm×幅41.7mm×奥行き66.2mmであった。\n\n【0060】\n\nワイヤソーに対する成形体の配置関係は、各ワイヤと成形体との接触部長さが41.7mmとなるように設定した。また、不図示のロードセルにより、成形体上昇時に成形体がワイヤソーから受ける加工負荷(下方向に向かう負荷)を測定した。また、この実験では、ワイヤ送り速度および切込速度を100〜150m/minの範囲で変化させ、また、切込速度を150〜420mm/minの範囲で変化させた。\n\n【0061】\n\nワイヤソーによる切断加工直後におけるプレート状切断グリーンの厚さ(図5のx方向サイズ)を4.76mmとした。このサイズは、ワイヤピッチ(5mm)からワイヤ外径\n\n(0.24mm)を引くことにより求めた計算値である。\n\n【0062】\n\n次に、図1(c)および(d)に示すようにして、押圧部10a、10bで成形体を把持し、位置ずらしを行なった。押圧部10a、10bは、金属または樹脂などの材料から形成され、5mmのピッチで周期的に配列された溝を有している。溝の深さは1〜5mmである。このような押圧部10a、10bを用いることにより、スライスされたグリーンを交互に1〜5mm程度シフトさせることができる。このシフト量は、本実施例の場合、押圧部10a、10bに形成する溝の深さによって調節できる。シフト量の好ましい大きさは、0.5mm以上5mm以下である。シフト量が小さすぎると、切断面の密着を抑制することができず、また、シフト量が大きすぎると、摩擦によってグリーンの一部に欠けや割れが生じるおそれがある。シフト量のより好ましい大きさは、1mm以上4mm以下である。\n\n【0063】\n\nこの後、図1(e)に示す搬送工程を経て、焼結工程を行なう。この焼結工程は、例えば約1000℃〜約1100℃の温度で、不活性ガス(希ガスや窒素ガス)雰囲気下、または真空中で、約1〜5時間実行される。必要に応じて、得られた焼結体を、例えば約450℃〜約800℃の温度で、約1〜8時間時効処理を行っても良い。なお、焼結体に含まれる炭素の量を減らし、磁気特性を向上するために、上記焼結工程の前に、必要に応じて、合金粉末に添加した潤滑剤や切断工程で用いた切削液を加熱除去してもよい。加熱除去工程は、潤滑剤や切削液の種類にもよるが、例えば、約 100℃から600℃の温度で、減圧雰囲気下で、約3時間〜約6時間実行される。ここでは、500℃で2時間とした。\n\n【0064】\n\n焼結によって成形体の厚さは30%近く収縮し、研磨によって焼結体の厚さは更に0.1mm程度小さくなった。焼結による収縮はプレス中に印加した配向磁界の向きに最も顕著に生じる。なお、本実施例では、成形体の厚さ方向に磁界を印加し、粉末の配向を行っていた。\n\n【0065】\n\n従来、焼結による収縮が起きた後の焼結体を切断加工していたため、その切断代が焼結体の厚さに占める比率が大きかった。これに対し、本発明では収縮する前の成形体を切断するため、用いるワイヤの外径が等しい場合でも、成形体の厚さに占める切断代の比率は相対的に小さくなる。このことは、切断加工によって失われる材料をできるたけ少なくし、材料の歩留まり(利用効率)の向上に大きく寄与する結果となる。\n\n【0066】\n\n上記実施形態において好適に用いられるR-Fe-B系希土類磁石粉末は、例えば、以下のような工程を経て作製される。\n\n【0067】\n\nまず、公知のストリップキャスト法を用いてR-Fe-B系希土類磁石合金の鋳片を作製する。具体的には、まず所望の組成の合金を高周波溶解によって溶融し、合金溶湯を形成する。この合金溶湯を1350℃に保持した後、単ロール法によって、合金溶湯を急冷し、厚さ約0.3mmのフレーク状合金鋳塊を得ることができる。このときの急冷条件は、例えば、ロール周速度約1m/秒、冷却速度500℃/秒、過冷度200℃とする。\n\n【0068】\n\nこのようにして形成された急冷合金の厚さは0.03mm以上10mm以下の範囲にある。この合金は、短軸方向サイズが0.1μm以上100μm以下で長軸方向サイズが5μm以上500μm以下のR2T14B結晶粒と、R2T14B結晶粒の粒界に分散して存在するRリッチ相とを含有し、Rリッチ相の厚さは10μm以下である。ストリップキャスト法による原料合金の製造方法は、例えば、米国特許第5,383,978に開示されている。\n\n【0069】\n\n次に、粗粉砕された原料合金を複数の原料パックに充填し、ラックに搭載する。この後、前述の原料搬送装置を用いて、原料パックが搭載されたラックを水素炉の前まで搬送し、水素炉の内部へ挿入する。そして、水素炉内で水素粉砕処理を開始する。原料合金は水素炉内で加熱され、水素粉砕処理を受ける。粉砕後、原料合金の温度が常温程度に低下してから原料の取り出しを行うことが好ましい。しかし、高温状態(例えば40〜80℃)のまま原料を取り出しても、原料が大気と接触しないようにすれば、特に深刻な酸化は生じない。水素粉砕によって、希土類合金は0.1〜1.0mm程度の大きさに粗粉砕される。なお、合金は、水素粉砕処理の前において、平均粒径1〜10mmのフレーク状に粗粉砕されていることが好ましい。\n\n【0070】\n\n水素粉砕後、ロータリクーラ等の冷却装置によって、脆化した原料合金をより細かく解砕するとともに冷却することが好ましい。比較的高い温度状態のまま原料を取り出す場合は、ロータリクーラ等による冷却処理の時間を相対的に長くすれば良い。\n\n【0071】\n\nロータリクーラ等によって室温程度にまで冷却された原料粉末に対して、ジェットミルなどの粉砕装置を用いて更なる粉砕処理を行い、原料の微粉末を製造する。上記の実施形態では、ジェットミルを用いて窒素ガス雰囲気中で微粉砕し、平均粒径(FSSS粒径)が3.0〜3.2μmの磁石粉末を得た。この窒素ガス雰囲気中の酸素量は10000ppm程度に低く抑えることが好ましい。このようなジェットミルは、特公平6-6728号公報に記載されている。微粉砕時における雰囲気ガス中に含まれる酸化性ガス(酸素や水蒸気)の濃度を制御し、それによって、微粉砕後における磁石粉末の酸素含有量(重量)を6000ppm以下に調整することが好ましく、3000ppm以下に調整することがさらに好ましい。磁石粉末中の酸素量が6000ppmを超えて多くなりすぎると、磁石中に非磁性酸化物の占める割合が増加し、最終的な焼結磁石の磁気特性が劣化してしまうからである。\n\n【0072】\n\n次に、この磁石粉末に対し、ロッキングミキサー内で潤滑剤を例えば0.3質量%添加·混合し、潤滑剤で磁石粉末粒子の表面を被覆する。潤滑剤としては、脂肪酸エステルを石油系溶剤で希釈したものを用いることができる。上述の実施形態では、脂肪酸エステルとしてカプロン酸メチルを用い、石油系溶剤としてはイソパラフィンを用いる。カプロン酸メチルとイソパラフィンの重量比は、例えば1:9とする。このような液体潤滑剤は、磁石粉末粒子の表面を被覆し、粒子の酸化防止効果を発揮するとともに、プレスに際して成形体の密度を均一化し、配向の乱れを抑制する機能を発揮する。\n\n【0073】\n\nなお、潤滑剤の種類は上記のものに限定されるわけではない。脂肪酸エステルとしては、カプロン酸メチル以外に、例えば、カプリル酸メチル、ラウリル酸メチル、ラウリン酸メチルなどを用いても良い。溶剤としては、イソパラフィンに代表される石油系溶剤やナフテン系溶剤等を用いることができる。潤滑剤添加のタイミングは任意であり、微粉砕前、微粉砕中、微粉砕後の何れであっても良い。液体潤滑剤に代えて、あるいは液体潤滑剤とともに、ステアリン酸亜鉛などの固体(乾式)潤滑剤を用いても良い。\n\n【0074】\n\n上記磁石粉末は、0.5MA/m以上1.5MA/mの配向磁界を圧縮方向に垂直または平行に印加された状態で、公知のプレス装置により成形される。\n\n【0075】\n\n以上、酸化しやすく、加工しにくいR-Fe-B系焼結磁石について本発明を説明してきたが、本発明を他の材料からなる希土類焼結磁石や他の焼結磁石に適用することも可能である。\n\n【産業上の利用可能性】\n\n【0076】\n\n焼結前の成形体をワイヤソーで複数の板状部分に切断した後、板状部分の位置ずらしを\n\n行なうため、その後のハンドリングが容易になり、歩留まりが向上する。また、焼結前にグリーンの切断面を平滑化できるため、酸化などによる磁石特性の劣化を抑制することも可能になる。\n\n【図面の簡単な説明】\n\n【0077】\n\n【図1】本発明の主要な工程を示す斜視図であり、(a)は、ワイヤソー装置による成形体の切断加工を示し、(b)は、プレート状に切断されたグリーンを示し、(c)は、押圧部を示し、(d)は押圧部で成形体を把持している状態を示し、(e)は、積層されたプレート状切断グリーンが、上から順番に焼結台板へ載置されつつある様子を示している。\n\n【図2】(a)は、ワイヤソーによる切断直後における成形体を示す斜視図であり、(b)は、切断面に沿って交互にプレート状切断グリーンがスライドした状態を示す斜視図である。\n\n【図3】(a)は、ワイヤソーによる切断直後における成形体を示す上面図、(b)は、押圧部によって押圧されつつある状態を示す上面図、(c)は、押圧部を90℃だけ回転させることにより、プレート状切断グリーンの側面が紙面に平行になった状態を示す上面図、(d)は、押圧部材を成形体から離間した状態を示す上面図である。\n\n【図4】押圧部の他の構成例を示す上面図であり、(a)は、プレート状切断グリーンの厚さよりも小さな突出部を有する押圧部を示し、(b)は、周期的に配列された複数の溝を有する押圧部を示している。\n\n【図5】本発明に好適に用いられるワイヤソー装置の一構成例を示している。\n\n【図6】従来の焼結体を切断する場合と、本発明による焼結前の成形体を切断する場合について、製造工程数の違いを説明するフローチャートである。\n\n【図7】本発明の実施例で用いたワイヤソーの構成を模式的に示す斜視図である。\n\n【符号の説明】\n\n【0078】\n\n1    成形体(グリーン)\n\n1a、1b、1c、1d    ワイヤソーによって切断されたプレート状グリーン\n\n2    駆動装置\n\n3a、3b、3c、3d    ロール\n\n4    ワイヤソー\n\n10a、10b    押圧部', '技术领域\n\n[0001]\n\n制造烧结磁体的方法本发明涉及制造烧结磁体的方法。\n\n背景技术\n\n[0002]\n\n稀土类烧结磁体，压模通过粉碎稀土磁铁（原料合金）的合金形成的合金粉末后，通过烧结步骤，时效热处理过程中，和处理步骤等的制造。目前，稀土烧结磁体，两种类型的稀土 - 钴基磁体和稀土 - 铁 - 硼磁体广泛用于各种领域。在这些基稀土 - 铁 - 硼磁铁（下文中的至少一种元素.R称为“R-Fe-B磁体”是从由稀土类元素和钇组成的组中于，Fe为铁，B是硼在a）中示出了各种磁铁中具有最高磁能积，价格相对较低，并积极采用各种电子设备的。注意，Fe的一部分可以被诸如Co的过渡金属元素取代。而且，多达一半的硼可以被碳取代。\n\n[0003]\n\n为了生产具有由第一压缩由一压制装置模制的R-Fe-B系稀土类磁铁粉末的期望的形状的烧结磁体中，以制备尺寸比最终产品磁铁较大的模制体。然后，由紧凑烧结工序中，烧结体通过研磨，如通过硬金属片锯或砂轮的烧结体之后，已经进行以赋予所需的形状。例如，生产具有块状的第一烧结体，并且之后由通过切割该烧结体片锯或类似切割多个板状烧结体部分制成。\n\n[0004]\n\n然而，稀土合金磁铁，如R-Fe-B磁体的烧结体中是脆性非常坚硬和工作负荷较大时，磨削精度是困难的任务，处理时间需要更长的时间。因此，加工过程是制造成本增加的重要原因。\n\n[0005]\n\n为了解决这个问题，它在烧结（绿）之前提出了研磨成型体（专利文献1和2）。\n\n[0006]\n\n上述专利文献1公开了一种在旋转磨石或旋转刷倒角弓形铁氧体磁铁成形体的技术。在紧凑型应用这种技术的粉末成形体的高氧化反应性的R-Fe-B磁体中，产生旋转研磨轮和旋转刷和模塑体之间的摩擦热，雅稀土元素铁迅速与氧气或水分反应在大气中，在最坏情况下，可能点燃成型体生产的，以使磁体的即使没有落入这样的情况的磁特性劣化。\n\n[0007]\n\n专利文献2中，为了防止绿色加工，矿物油，合成油，或成型体时的生坯的氧化浸渍在植物油，一种技术，用于在加工切削刀片用于旋转状态的模制体它公开。\n\n[0008]\n\n然而，根据在专利文献2所描述的，在切割后的技术中，从脱脂成型体去除这种矿物油之前烧结是必不可少的，如果脱脂不充分，包含在油的步骤碳在烧结过程中起杂质的作用并使磁体特性恶化。\n\n[0009]\n\n另外，当使用使用锯片等的加工方法时，存在成型体的切割成本大并且材料的产量差的问题。\n\n[0010]\n\n为了解决这样的问题，在专利文献3中描述了用线锯切割成形体的技术。根据专利文献3中所公开的，为了通过细线锯烧结之前切断成型体相对较软的状态下，以减少处理负荷，在加工过程中，以抑制发热成形体的方法，该方法你可以做到。因此，即使当使用易于氧化的磁体粉末制造磁体时，也可以大大缩短加工时间而不会使最终磁体特性恶化。\n\n[专利文献1]日本未审专利公开No.8-64451\n\n[专利文献2]日本未审查专利公开No.8-181028\n\n[专利文献3]日本专利申请公开No.2003-303728\n\n发明内容\n\n发明内容\n\n[0011]\n\n根据专利文献3中描述的技术，需要单独地分离通过切割工艺生产的多个板状部分（切割件），然后执行烧结工艺。但是，由于成型体的板状部的切割表面是烧结前的软状态，存在几乎不彼此与相邻的板状部的切断面接触分离的问题。因此，当被切出的多个板状成型体处于这样一种状态，其被固定到彼此，运输等抓握当各个平板状成型体，例如一个机器人臂烧结板的烧结过程，除非施加大的力，否则不可能分离板状成型体，并且在成型体中可能会出现裂缝或碎裂。\n\n[0012]\n\n本发明是鉴于这样的心而作出的，它是一个主要目的，以由线切割所述成型体烧结之前所看到的，以允许处理和抑制开裂和生坯的破碎的产生的情况下从而提高了烧结磁体的制造产量。\n\n发明内容\n\n[0013]\n\n用于生产本发明的烧结磁体的制造方法包括步骤（A），以形成所述磁体粉末的成形体，切断成型体成多个与钢丝锯板状部，所述多个板状部的形成的垂直于切割平面（B）被布置在一个方向上的状态，并且成型体相对于所述含烧结磁体和烧结（C）的制造方法的板状部分，其中步骤（B）包括步骤（b）：在平行于切割平面的方向上移动多个板状部分中的至少一个的位置。\n\n[0014]\n\n在优选实施例中，步骤（b）包括在相反方向上交替地移动多个板状部分的位置的步骤。\n\n[0015]\n\n在一个优选的实施方案中，步骤（b）包括压制在相反的方向上的每个板状部具有多个对应各板状部的厚宽度的交替的凸部分的步骤。\n\n[0016]\n\n在一个优选的实施方案中，步骤（b），通过该凸部在相反的方向推压各板状部交替时包括平滑所述板状部的摩擦切断表面的步骤。\n\n[0017]\n\n在优选实施例中，在步骤（B）和步骤（C）之间，调整板状部件的方向，使得多个板状部件通过切割表面在垂直方向上堆叠（D）旋转基板。\n\n[0018]\n\n在优选实施例中，线锯具有外径为0.05mm或更大且3.0mm或更小的线材以及固定到线材上的磨粒。\n\n[0019]\n\n在一个优选的实施例中，磁铁粉末，RTB稀土合金（R中的至少一个元素选自稀土元素和钇，过渡金属元素T总是含有铁组成的组中，B是硼）粉末。\n\n[0020]\n\n线锯装置包括用于将磁体粉末的压块切割成多个板状部分的线，以及多个板状部分中的至少一个处于多个板状态的状态。以及用于在平行于切割平面的方向上移动一个位置的按压构件。\n\n[0021]\n\n在一个优选实施例中，按压构件具有一对用于抓住多个板状部分的按压部分，并且每个按压部分按压多个板 - 并且，其中一个按压部分的突出部分的位置相对于另一个按压部分的突出部分的位置偏移一半的周期。\n\n[0022]\n\n在优选实施例中，驱动单元包括驱动按压构件的驱动单元，驱动单元在平行于切割平面的方向上驱动该对按压单元以抓住多个板 - 在交替地移动多个板状部分的位置之后，多个板状部分作为整体旋转，使得多个板状部分的各个切割表面是水平的。\n\n发明效果\n\n[0023]\n\n根据本发明，通过用线锯在烧结成多个板状部分之前切割生坯，然后沿着切割表面平行地交替移动板状部分，切割表面可以执行平滑，并且可以抑制相互固定。结果，可以平滑地分离切割的各个板状部分并迅速移动到下一个烧结步骤。\n\n[0024]\n\n此外，根据本发明，用于通过细线处理相对较软的状态的坯体烧结前看到的，处理负荷较小时，也能够使用以抑制发热的结构紧凑，易于氧化的磁铁粉末的即使在制造磁体的情况下，也可以大大缩短加工时间，并且可以在不损害最终磁体特性的情况下大大降低制造成本。\n\n具体实施方式\n\n[0025]\n\n在本发明中，首先，在烧结之前用线锯切割致密（绿色）的磁铁粉末并分成多个板状部分（下文中称为“板状切割绿”）。线锯是一种将沿一个方向或两个方向行进的线压在待加工的成型体上并在线和成型体之间用磨粒加工成型体的技术，将在后面描述。首先，参考图1，将描述通过线锯分成板状部分的模制体的过程。\n\n[0026]\n\n图1（a）显示了通过线锯装置切割成型体的过程。通过移动线，如图1（b）所示，将块状成形体1分割成板状切割生坯1a，1b，1c和1d。在图1中，为了简单起见，从一个块状成型体1制造四个板状生坯1a至1d，但是可以生产更多的板状生坯。此后，在本发明的一个优选实施例中，模制体1由具有一对具有图1（c）所示结构的按压部分10a，10b的按压构件夹持。每个按压部分10a和10b具有多个周期性布置的突出部分，以便彼此按压多个板状切割生坯1a和1b。一个按压部分的突出部分的位置相对于另一个按压部分的突出部分的位置偏移该装置的半个周期。因此，当用按压构件抓住模制体时，多个板状切割绿的位置交替地移位，如图1（d）所示。\n\n[0027]\n\n由导线所形成的模制体1的切断面所看到的，由于微小的凹凸的情况下，当两个相邻的板之间的切割平面的形式切割绿色接触，不再能够容易地分离，从而导致裂纹或碎裂有一种恐惧。然而，如在本发明的优选实施例进行的，移位板形式时切割交替，由切割面彼此的摩擦后，立即切割绿色，由于微细的凹凸很容易平滑拉出板状切割绿这让。此外，根据本发明，由于切断面通过摩擦平滑化，在切断面露出的稀土类磁铁粉末的表面面积减小，也有效地抑制成型体的氧化的效果（稀土类磁铁粉末）获得。\n\n[0028]\n\n接下来，在通过挤压部分10a和10b夹持的同时旋转压块1，并且将多个板状切割坯料1a至1d堆叠并放置在工作台上。图1（e）示出了层叠板状切割坯料1a至1d从顶部依次放置在烧结基板上的状态。\n\n[0029]\n\n根据上述一系列步骤，在板状切割绿色1A〜1D中的按压构件10a，通过图10B中平行交替沿着切割平面移动，既平稳切割表面，抑制了相互粘着你可以。结果，如图1（e）所示，可以平滑地分离板状切割绿1a至1d。\n\n[0030]\n\n如果，如果没有在沿着如图所示的每个板形切割绿色的切割平面交替平行移动。1（c）和（d），在图中所示的步骤1（E），例如板提起乔切割绿色1b中时，在板状切割绿色1C下方被提升而粘附，或输送期间下降，存在被放置在烧结基体上板层叠状态的风险。\n\n[0031]\n\n图2（a）是示出由线切割后立即成型体1看到的立体图，和2（b）是表示将板状切割绿色1A〜1D交替地沿切割平面滑动的状态的立体它是一个示图。\n\n[0032]\n\n图3（a）是示出由线锯，图1中的切割后立即的成型体1的俯视图，图3（b）所示，推压部10a，由10b中的模制体1是示出被按压的状态的俯视图。按压部10a中，10b的相对的表面，所述多个具有宽度基本上等于〜1D是周期性地形成各板形切口绿色1a的厚度的突起100的。突出部100以沿垂直于该图的平面中延伸，突起100（突出量）的高度限定为1 d的切断绿色1中的偏移量。图3（c）所示，通过旋转推压部10A，10B仅90度，是表示在侧表面上的板状的切削绿色1A〜1D变得平行于页面的状态的顶视图。在图中，示出了板状切割坯料1a的侧面是正面的示例。图3（d）是表示按压部10a和10b与成形体1分离的状态的俯视图。在图3（d）图所示的状态下，它是层叠的板状切割绿色1a至d被放置在在此状态下，例如工作台的顶部（参见图1的（e））。\n\n[0033]\n\n在图3所示加压部分10a。的（a）〜（d），图10B，虽然多个具有宽度基本上等于每个板形切割的厚度突起绿色1a至d，按压部图10a和10b不限于具有这种结构的那些。图4（a）是具有小的突起200比的厚度的板状切割绿色1a至d，20B示出了按压部分20a。此外，图4（b）示出了具有周期性布置的多个凹槽的按压部分30a和30b。在图4（b）所示的例子中，按压部30a，其中该槽是在对30B形成的一侧的表面上没有形成槽的区域中，它会起到突起。\n\n[0034]\n\n在本发明的一个优选实施例中，将磨粒固定在表面上的金属丝用于线锯。导线芯线，优选的是由高拉伸强度的材料，例如，硬钢丝（钢琴线）构成，合金如Ni-Cr或Fe-Ni系，难熔金属如W或Mo，或聚酰胺，它由成束纤维形成。而且，如果线太粗，则切割余量增加，从而材料的产量降低。相反，如果导线太薄，则可能会因处理负荷而切断导线。此外，它增加了切削阻力，从而产生热量和点火。因此，本发明中使用的线材的外径优选设定为0.05mm以上且3.0mm以下。更优选的线材外径为0.1mm以上且1.0mm以下。注意，导线这里所看到的，宽度在切割方向被广泛地指以下切割装置3.0mm时，例如，其宽度应包括下列带锯或类似物3.0mm以下。\n\n[0035]\n\n同时，磨料优选由高硬度材料制成，如金刚石，SiC或氧化铝和颗粒尺寸，通常为10微米或100微米或更小。优选的是，磨粒通过诸如树脂膜的粘合层固定到线芯线的表面。作为树脂膜，可以使用酚醛树脂，环氧树脂或聚酰亚胺树脂。树脂膜的厚度为约0.02mm至1.0mm。\n\n[0036]\n\n代替树脂膜作为粘合层，可以使用金属膜等来固定磨粒。例如，（有时也被称为“静电Chakutogitsubu线”。）电线通过电沉积固定磨粒（电镀）时，突出量的磨粒比固定电线磨粒与树脂层（可以增加磨粒从粘合层表面突出的部分的高度），这是优选的，因为它在切割碎片（切割粉末或污泥）的排出方面是优异的。另外，如果可以获得足够的强度，则可以使用工作人员线。通过使用短截线，可以进一步改善切割废料的排出性能。如后所述，当切削液用于增强切削废料的排放时，从切削液的耐受性的观点来看，优选使用电沉积磨粒线。\n\n[0037]\n\n这些磨料颗粒的平均颗粒直径d，从切削效率的观点出发，优选满足30微米≦d≦1000微米的关系，特别是，优选的是，满足40微米≦d≦200微米的关系。此外，从切割效率的发光效率和切割废料，在钢丝锯的行进方向的观点出发，使相邻的磨料颗粒之间的平均距离的范围是从200到磨料颗粒的平均颗粒直径d的600％至彼此并且突出量优选在15μm至500μm的范围内。\n\n[0038]\n\n压块在压制时施加的取向磁场被磁化。即使为了去除该磁化而对压块施加去磁，也存在约0.001T至0.1T的残余磁性。尽管可以使剩余磁力小于此，但是由于这个原因，步骤的数量增加，这从大规模生产的观点来看是不希望的。结果成型体具有剩磁，切割所述成型体在一个线锯时，降低了切削余量，由于遵守由剩磁切断面的切屑，也难以成型体彼此分离。为了避免这种问题，优选提供0.1mm或更大的切割余量。\n\n[0039]\n\n此外，从可使用电线（游离磨粒型线）磨粒不固定于表面上，但是如果是这样，使用磨粒粘附于该表面的线（固定磨粒型线）即使切屑排出几乎不，切相对于（切槽）容易积累凹槽，有一种可能性，即切屑通过上述剩磁增加附着于切割平面。因此，优选使用固定磨粒型线，因为模制体容易彼此分离。\n\n[0040]\n\n在将模制主体切成多个部分的情况下，一旦形成，线锯可以沿着切割表面再次相对移动，以便于模制主体的分离。通过这样再次通过钢丝锯沿切割平面，切割残留在成型体彼此之间的间隙的芯片而不会产生碎屑被排放，因此能够成型体分离。为了沿线锯切割表面再次通过，优选保持由第一切割形成的凹槽（多个模制体之间的间隙）。\n\n[0041]\n\n此外，为了在切削加工步骤中改善切削废料的排出性能，可以至少在切削液施加到与线锯的成形体接触的部分的状态下切削成形体。将切削液施加到线锯上使得切屑更容易粘附到线锯上并且容易使碎屑（粉末）聚集，从而更多的切屑粘附到线锯上并从切割部分排出是的。\n\n[0042]\n\n在下文中，将参考附图描述本发明的实施例。\n\n[0043]\n\n（实施方式）\n\n图5示出了在该实施例中使用的线锯装置的配置示例。所示装置包括模制体被处理（绿色）1被支撑，驱动单元2，用于驱动上下（Z轴方向），多个辊3A，3B，3C，以及三维。\n\n[0044]\n\n线锯4是这样一种线锯，其中上述磨粒固定在线上，缠绕在辊3a至3d上，并沿平行于y轴的方向行进。线锯4被布置在x轴方向上以相等的间隔，配置间隔（线间距）任意地由每个从成形体1切断板状部的尺寸（厚度）设定的块形。在适合应用本发明的应用中，将线间距设定在例如约1mm或更大且约30mm或更小的范围内。\n\n[0045]\n\n考虑到线材强度和切割余量，用于线锯4的线材的外径优选设定在0.05mm以上至3.0mm以下的范围内。如果要用线锯4切割烧结后的硬质烧结体，则对线施加约20至40N的张力。与此相反，在本发明中，用于烧结之前处理的软模制体1，因为它需要在张力被施加到导线相对较低为0.1〜10，该切削阻力小，相对氧浓度即使在高气压环境下也可以切割和加工生坯而没有点燃和氧化的问题\n\n[0046]\n\n可以在加工过程中将诸如异链烷烃或乙醇的有机溶剂作为切削液供应到线锯4。然而，切削液的供应不是必需的，但是如下所述，可以改善切削废料的排出性能。\n\n[0047]\n\n在本说明书中，线锯4的y轴方向速度（v  y ）被称为“送丝速度”。通过将成型体1压在以预定的送丝速度行进的线锯4上，可以将成型体1切割并切割/分割（切片）成多个部分。在图示的例子中，将压块1压在电线4上的速度（v  z ）对应于驱动装置的z轴方向的驱动速度，将被称为“切割速度”。切割速度越快，处理所需的时间越短。\n\n[0048]\n\n从后面描述的实施例的描述中可以明显看出，送丝速度和切割速度对加工负荷的值有很大影响。以适应实际上适当的范围的处理负荷，优选的是设定切削速度例如低于30毫米/分钟或更1200毫米/分钟，并且还更优选设定为低于30毫米/分钟或多路800毫米/分钟。\n\n[0049]\n\n注意，线锯4不仅可以沿某个方向驱动，而且可以沿y轴方向往复运动（往复运动）。在这种情况下，例如，用多根线拉伸的矩形框架可以通过气缸等在y轴方向上线性往复运动。代替气缸，可以采用组合电动机和曲柄的装置。\n\n[0050]\n\n图6是用于说明根据本发明的在切割传统烧结体的情况和在烧结之前切割成形体的情况之间的制造工艺差异的流程图。如图6所示，在传统的例子中，首先，制备原料粉末的步骤，压制粉末的步骤，烧结成型体的步骤，切割烧结体的步骤，切割每个烧结体的步骤对部件进行表面处理的步骤等。相反，在本发明中，在压制步骤之后和烧结步骤之前，切割生坯以产生具有接近最终磁体产品的形状和尺寸的模制体部件。如上所述，在本发明中，由于切割了比烧结体极其柔软和易于加工的模制体（绿色），因此切割工作所需的时间大大减少。\n\n[0051]\n\n根据本发明，线锯和模制体之间的接触面积小于使用传统旋转刀片等的情况下的接触面积，并且由摩擦产生的热量非常小。例如，在传统旋转叶片的情况下，即使接触面积为约1000至10000mm  2 ，根据本发明，接触面积为5至50mm  2 它可被抑制到一定程度。因此，即使在空气气氛中进行线锯切割，也可以充分避免稀土合金粉末的氧化和着火问题。\n\n[0052]\n\n但是，即使在本发明的情况下，为了进一步抑制磁铁粉末的氧化，实现高性能的磁铁特性，当磁铁粉末的氧浓度超过3000ppm（重量比）时，氧浓度为mol。优选在惰性气体气氛中进行线锯切，所述惰性气体气氛以该比例调节至总量的10％或更多且15％或更少。特别是，在使用氧气浓度为3000ppm或更低的低氧磁体粉末制造压块的情况下，由于磁体粉末的氧化反应性非常强，氧气浓度变为理想的是在受限制的环境中进行线锯切割（例如，在氧气浓度按摩尔比计为2％或更低的惰性气体气氛中）。通过部分地封闭进行切割工作的设备的周边，可以将氧浓度控制在上述范围内，并且可以在不将线锯设备的周围与大气完全分离的情况下实现。当如上所述在气体中切割成形体时，优选控制气氛。\n\n[0053]\n\n在如上所述在气体中处理干燥模制产品的情况下，优选在模制之前向磁体粉末添加固体或液体润滑剂（例如，脂肪酸酯）。这是因为粉末表面上形成的润滑剂膜防止了氧化。此外，在生产模制体之后，可以在加工之前将润滑剂充分浸渍到模制体中。这种润滑剂优选是在随后的烧结步骤中可以容易地从模塑体中除去的润滑剂。\n\n[0054]\n\n在使用传统旋转刀片的情况下，切割余量很大（例如，宽度为0.5mm或更大），并且切割废料可能从加工部分上撒粉并散落到周围环境中。如果分散的切割废物点燃，则极其危险。然而，在使用根据本发明的线锯的情况下，可以在很大程度上抑制切割废料的飞散，从而可以安全地进行工作。\n\n[0055]\n\n此外，线锯加工可以在有机溶剂中进行，例如以异链烷烃为代表的饱和烃溶剂。在这样的有机溶剂中，由于易于脱脂，因此在标准烧结工艺中将其从成型体中除去而不引入特殊的脱脂工艺。因此，不存在有机溶剂中的碳使烧结磁体的磁特性劣化的问题。\n\n[0056]\n\n通过钢丝锯切割已经完成之后，在图中示出的推压部10a。1（c）和（d），而与图10b夹持成形体1，执行移动每个绿色切口的位置。优选的是，每个切割的坯料的厚度为例如3mm或更大，使得即使在被挤压部分10a和10b挤压时也不会发生破裂和碎裂。此外，为了提高模塑制品的强度，模塑密度优选为4.0g / cm 3至或更高。\n\n[0057]\n\n在以这种方式进行位置移动之后，通过图1（d）所示的步骤进行每个切割绿色烧结步骤。\n\n[0058]\n\n接下来，将描述根据本发明的上述实施例的具体示例。\n\n[0059]\n\n在本实施例中，如图7所示，用在空气气氛中排成三排的线锯切割从底部上升的成型体（绿色）。线锯的线外径（线径）为0.24mm，线间距为5mm。合成组成为26质量％（Nd + Pr），5质量％Dy，1质量％B，1质量％Co，0.2质量％Al，0.1质量％Cu，余量Fe为26质量％ （FSSS粒径：3.0~3.2μm）使用公知的压力机。用于定向磁场的施加磁场约为1.2T。成型体具有大致长方体形状，其尺寸为高15mm×宽41.7mm×深66.2mm。\n\n[0060]\n\n设定成型体相对于线锯的​​布置关系，使得每根线与成型体之间的接触部分的长度为41.7mm。此外，通过测力传感器（未示出）测量在压坯上升时由线锯接收的处理负荷（向下负荷）。在该实验中，焊丝进给速度和切削速度在100至150m / min的范围内变化，并且切削速度在150至420mm / min的范围内变化。\n\n[0061]\n\n刚用线锯切割后的板状切割坯料的厚度（图5中x方向的尺寸）设定为4.76mm。该尺寸是通过从线间距（5mm）减去线外径（0.24mm）而获得的计算值。\n\n[0062]\n\n接下来，如图1（c）和1（d）所示，通过挤压部分10a和10b抓住成型体并进行位置偏移。按压部分10a和10b由诸如金属或树脂的材料制成，并具有以5mm的间距周期性地布置的凹槽。凹槽的深度为1至5毫米。通过使用这样的按压部分10a和10b，可以将切片的绿色交替地移动大约1到5mm。在该实施例中，该偏移量可以通过在按压部分10a，10b中形成的凹槽的深度来调节。偏移量的优选尺寸为0.5mm或更大且5mm或更小。如果偏移量太小，则不可能抑制切割表面的紧密接触，并且如果偏移量太大，则由于摩擦可能在部分绿色中发生碎裂或破裂。更优选的偏移量的大小为1mm以上且4mm以下。\n\n[0063]\n\n之后，通过图1（e）所示的输送步骤进行烧结步骤。该烧结步骤例如在约1000℃至约1100℃的温度下在惰性气体（稀有气体或氮气）气氛中或在真空中进行约1至5小时。如果需要，可以在例如约450℃至约800℃的温度下对所获得的烧结体进行时效处理约1至8小时。为了减少烧结体中含有的碳量并改善磁性能，在烧结步骤之前，如果需要，将润滑剂添加到合金粉末或切割步骤中使用的切削液中可以加热和移除。根据润滑剂和切削液的类型，除热步骤例如在约100℃至600℃的温度下在减压气氛中进行约3小时至约6小时。在此，温度为500℃，持续2小时。\n\n[0064]\n\n通过烧结，模塑体的厚度收缩约30％，并且通过抛光将烧结体的厚度进一步减小约0.1mm。由于烧结引起的收缩在压制期间施加的取向磁场的取向中最明显地发生。在该实例中，在压块的厚度方向上施加磁场以使粉末取向。\n\n[0065]\n\n通常，由于烧结收缩后的烧结体已被切割，因此切割余量占烧结体厚度的很大比例。另一方面，在本发明中，由于切割前的成型体被切断，因此即使所使用的线材的外径相等，切割余量与成型体的厚度之比也变得相对较小。结果，尽可能地减少了由切割过程损失的材料数量，这极大地有助于提高材料的产量（利用效率）。\n\n[0066]\n\n适用于上述实施方案的R-Fe-B基稀土磁体粉末通过例如以下步骤制造。\n\n[0067]\n\n首先，通过已知的带铸法生产R-Fe-B基稀土磁体合金的铸带。具体地，首先，通过高频熔化熔化具有所需组成的合金，以形成熔融合金。在将熔融合金保持在1350℃之后，可以通过单辊法快速冷却熔融合金，以获得厚度为约0.3mm的片状合金锭。此时的淬火条件是例如辊周速约1m / sec，冷却速度500℃/ s，过冷度200℃。\n\n[0068]\n\n由此形成的快速凝固合金的厚度在0.03mm以上至10mm以下的范围内。这种合金在0.1微米或100微米或更小为5μm或500微米或更小的短的轴向尺寸的纵向大小为R  2 Ť 14 乙晶粒，R  2  T  14  B晶粒的晶界中，并且富R相的厚度为10μm或更小。通过带铸法制造原料合金的方法公开在例如美国专利No.5,383,978中。\n\n[0069]\n\n接下来，将粗碎材料合金填充在多个原料包中并安装在支架上。此后，通过使用上述原料输送装置将承载材料包的架子输送到氢炉的前部并插入氢炉的内部。然后，在氢气炉中开始氢破碎过程。原料合金在氢气炉中加热并进行氢破碎处理。研磨后，优选在原料合金的温度降低至约室温后取出原料。但是，即使除去的材料保持在高温状态（例如，40〜80℃），如果这样的材料不与大气接触，就没有特别严重氧化。通过氢压碎，将稀土合金粗粉碎至约0.1至1.0mm的尺寸。优选在氢粉碎处理之前将合金粗粉碎成平均粒径为1至10mm的薄片形状。\n\n[0070]\n\n在粉碎氢之后，优选用冷却装置如旋转冷却器更细化地分解和冷却脆化的原料合金。在以较高温度状态取出原料的情况下，可以使旋转冷却器等的冷却过程的时间相对较长。\n\n[0071]\n\n通过旋转冷却器等将冷却至约室温的原料粉末用粉碎机如喷射磨机进一步粉碎，以生产原料的细粉末。在上述实施方案中，使用喷射磨机在氮气气氛中将粉末细粉碎，得到平均粒径（FSSS粒径）为3.0至3.2μm的磁粉。氮气气氛中的氧气量优选抑制在约10,000ppm。这种喷射式粉碎机在日本已审查专利公开No.6-6728中有所描述。和控制氧化在细粉碎时包含在气氛气体中的气体（氧气和水蒸汽）的浓度，由此，优选的是在研磨后以调节下面6000ppm磁粉（重量）的氧含量，进一步优选将其调节至3000ppm或更低。如果磁铁粉末中的氧量超过6000ppm，则磁铁中非磁性氧化物占据的比例增加，最终烧结磁铁的磁特性劣化。\n\n[0072]\n\n接下来，在摇动混合器中添加例如0.3质量％的润滑剂并与该磁体粉末混合，并且用润滑剂覆盖磁体粉末颗粒的表面。作为润滑剂，可以使用通过用石油溶剂稀释脂肪酸酯而获得的润滑剂。在上述实施方案中，使用己酸甲酯作为脂肪酸酯，异链烷烃用作石油溶剂。己酸甲酯与异链烷烃的重量比例如为1：9。这种液体润滑剂覆盖在压制过程中的磁铁粉末的颗粒的成型体的表面上，以及施加所述颗粒的抗氧化作用，并且均匀的密度，显示出抑制取向的紊乱的功能。\n\n[0073]\n\n润滑剂的类型不限于上述类型。除了己酸甲酯之外，例如，可以使用辛酸甲酯，月桂酸甲酯，月桂酸甲酯等作为脂肪酸酯。作为溶剂，可以使用以异链烷烃，环烷烃溶剂等为代表的石油溶剂。添加润滑剂的时间是任意的，可以在精细粉碎之前，在精细粉碎期间，或在精细粉碎之后。可以使用固体（干）润滑剂如硬脂酸锌代替液体润滑剂或用液体润滑剂。\n\n[0074]\n\n磁粉通过已知的压力机在垂直或平行于压缩方向施加0.5MA / m或更大且1.5MA / m的取向磁场的状态下形成。\n\n[0075]\n\n以上，容易被氧化，因为尽管本发明已经与顽固性的R-Fe-B烧结磁体所描述的，被施加到稀土烧结磁体或其它烧结磁体，包括由其它材料本发明这是可能的。\n\n[工业适用性]\n\n[0076]\n\n由于在用线锯烧结成多个板状部分之前切割成形体之后板状部分的位置发生偏移，因此之后的处理变得容易并且提高了产量。另外，由于在烧结之前可以使生坯的切割表面平滑，因此可以抑制由于氧化等导致的磁体特性的劣化。\n\n附图说明\n\n[0077]\n\n附图说明图1是表示本发明的主要步骤的立体图，（a）表示线锯装置的成形体的切断加工，（b）表示绿色切成板状，图3（d）表示通过按压部件夹持成型体的状态，（e）表示层叠板状切割坯料从顶部依次放置在烧结基板上的状态如图1所示。\n\n图2（a）是表示刚用线锯切割后的成型体的立体图，图2（b）是表示板状切口绿色沿切割面交替滑动的状态的立体图。\n\n图3（a）是表示用线切割锯后立即的成型体的俯视图，（b）是表示正在由所述按压部按压的状态下的俯视图，（c）是挤压部分只有90℃。图4（d）是表示按压构件与成形体分离的状态的俯视图。\n\n图4A是表示按压部的另一结构例的俯视图，（a）表示突出部小于板状切削绿的厚度的按压部，（b）表示周期性排列按压部分具有多个凹槽。\n\n图5示出了适用于本发明的线锯装置的配置示例。\n\n图6是用于说明根据本发明的在切割传统烧结体的情况和在烧结之前切割成型体的情况之间的制造步骤数的差异的流程图。\n\n图7是示意性地示出在本发明的实施例中使用的线锯的构造的透视图。\n\n[标志说明]\n\n[0078]\n\n1个模压体（绿色）\n\n1a，1b，1c，1d板材用线锯切割绿色\n\n2个驱动单元\n\n3a，3b，3c，3d roll\n\n4线锯\n\n图10a，10b的按压部分');
INSERT INTO `os_patent_instruction_text` VALUES (13029, 22858, '【技術分野】\n\n【0001】\n\n本発明は、耐食性希土類系永久磁石およびその製造方法に関する。\n\n【背景技術】\n\n【0002】\n\nNd-Fe-B系永久磁石に代表されるR-Fe-B系永久磁石などの希土類系永久磁石は、高い磁気特性を有していることから、今日、様々な分野で使用されている。しかしながら、希土類系永久磁石は、大気中で酸化腐食されやすい希土類元素:Rを含む。それ故、表面処理を行わずに使用した場合には、わずかな酸やアルカリや水分などの影響によって表面から腐食が進行して錆が発生し、それに伴って、磁気特性の劣化やばらつきを招くことになる。さらに、磁気回路などの装置に組み込んだ磁石に錆が発生した場合、錆が飛散して周辺部品を汚染する恐れがある。そこで、上記の点に鑑み、希土類系永久磁石に耐食性を付与することを目的として、その表面に耐食性被膜としてのAl被膜を真空蒸着法やイオンプレーティング法やスパッタリング法などの気相成長法により形成することが行われている。Al被膜は、耐食性や量産性に優れていることに加え、部品組み込み時に必要とされる接着剤との接着信頼性に優れている(接着剤が本質的に有する破壊強度に達するまでに被膜と接着剤との間で剥離が生じにくい)ので、強い接着強度が要求される希土類系永久磁石に対して広く適用されている。\n\nところで、近頃、希土類系永久磁石の使用分野は拡大の一途を辿っており、それに伴い、磁石に求められる耐食性は、ますます厳しく多様化したものになってきている。従って、優れた耐食性を有するAl被膜といえども、耐高温高湿性能、耐塩水噴霧性能、耐酸性雨性能などの向上が望まれている。しかしながら、気相成長法で形成したAl被膜は、Alという金属の特性から、その表面が酸化して不動態被膜で覆われているが、Al被膜の表面の不動態被膜が損傷を受けると、そこから磁石の表面に向かって腐食が進行し(孔食)、やがて腐食が磁石の表面に到達してしまうという性質を有する。また、気相成長法で形成したAl被膜は、時として、ドロップレット(溶融粒子)の発生と欠落により、数十μmの広がりで被膜の存在しない部分や薄い部分などの欠陥部分が生じることがあるが、このようなことが起こったAl被膜では、孔食の発生はさらに促進される。今日の技術によって形成されるAl被膜の耐食性は非常に優れているものの、このような腐食は常に起こり得ることから、その解決策を確立しておかなければ、Al被膜の耐食性の向上を図ることはできない。\n\n以上のような問題に対する解決策として、Al被膜の耐食性を補強·補完する方法にな\n\nり得るものとしては、例えば、特許文献1に記載されている、化成処理反応によりAl被膜の表面改質を行うことができるアルミ-クロメート処理方法がある。しかしながら、この方法は、環境や人体にとって望ましくない六価クロムやフッ素イオンを含む処理液を用い、Al被膜の表面をフッ素イオンでエッチングしながらクロム酸塩被膜を形成するものであるが、形成されたクロム酸塩被膜には処理液中に含まれていた六価クロムが取り込まれていることから、環境や人体に対する悪影響が懸念されるという問題があるとともに、廃液処理が複雑であるという問題がある。よって、この方法は、必ずしも今日において望ましい方法であるとは言えない。また、クロム酸塩被膜は、Al被膜の表面での化成処理反応による反応性被膜であるため、厚膜化を図ることが困難であり、ドロップレットの発生と欠落による欠陥部分に対しては、その部分を封孔して耐食性を補強·補完するといったことが十分にできないという問題がある。従って、アルミ-クロメート処理方法にとってかわることができる、優れた解決策が望まれている。\n\n【特許文献1】特公平6-66173号公報\n\n【発明の開示】\n\n【発明が解決しようとする課題】\n\n【0003】\n\nそこで本発明は、優れた接着信頼性を確保したままAl被膜の孔食の発生を抑制してその耐食性の向上が図られた耐食性希土類系永久磁石およびその製造方法を提供することを目的とする。\n\n【課題を解決するための手段】\n\n【0004】\n\n本発明者は、上記の点に鑑み種々の検討を行った結果、希土類系永久磁石の表面に形成したAl被膜の表面をZnおよび/またはSnによる置換処理をしてから、構成成分として三価クロムと炭素を含み、六価クロムフリーの化成処理被膜を形成することにより、環境や人体に対して悪影響を及ぼすことなく、優れた接着信頼性を確保したままAl被膜の孔食の発生を抑制してその耐食性の向上を図ることができることを見出した。\n\n【0005】\n\n上記の知見に基づいてなされた本発明の耐食性希土類系永久磁石は、請求項1記載の通り、焼結磁石の表面に気相成長法によって膜厚が3μm〜25μmであるAl被膜を形成した後、その表面をZnおよび/またはSnによる置換処理をしてから、構成成分として三価クロムと炭素を含み、六価クロムフリーの化成処理被膜を形成してなることを特徴とする。\n\nまた、請求項2記載の耐食性希土類系永久磁石は、請求項1記載の耐食性希土類系永久磁石において、化成処理被膜がさらに構成成分としてCo,Mo,W,Ti,Zr,Mn,Feから選ばれる少なくとも1種の金属成分を含んでなることを特徴とする。\n\nまた、請求項3記載の耐食性希土類系永久磁石は、請求項1または2記載の耐食性希土類系永久磁石において、Al被膜と化成処理被膜の間に、Al被膜の表面のZnおよび/またはSnによる置換処理に基づく置換処理層を有してなることを特徴とする。\n\nまた、請求項4記載の耐食性希土類系永久磁石は、請求項3記載の耐食性希土類系永久磁石において、置換処理層が(1)Znおよび/またはSnと(2)Fe,Ni,Co,Cuから選ばれる少なくとも1種の金属成分を含んでなることを特徴とする。\n\nまた、請求項5記載の耐食性希土類系永久磁石は、請求項1乃至4のいずれかに記載の耐食性希土類系永久磁石において、化成処理被膜の膜厚が0.01μm〜1μmであることを特徴とする。\n\nまた、本発明の耐食性希土類系永久磁石の製造方法は、請求項6記載の通り、焼結磁石の表面に気相成長法によって膜厚が3μm〜25μmであるAl被膜を形成した後、その表面をZnおよび/またはSnによる置換処理をしてから、構成成分として三価クロムと炭素を含み、六価クロムフリーの化成処理被膜を形成することを特徴とする。\n\nまた、請求項7記載の製造方法は、請求項6記載の製造方法において、化成処理被膜がさらに構成成分としてCo,Mo,W,Ti,Zr,Mn,Feから選ばれる少なくとも\n\n1種の金属成分を含んでなることを特徴とする。\n\nまた、請求項8記載の製造方法は、請求項6または7記載の製造方法において、Al被膜の表面に、Znおよび/またはSnによる置換処理に基づく層厚が0.05μm〜5μmの置換処理層を形成してから、その表面に、化成処理被膜を形成することを特徴とする。\n\nまた、請求項9記載の製造方法は、請求項8記載の製造方法において、置換処理層が(1)Znおよび/またはSnと(2)Fe,Ni,Co,Cuから選ばれる少なくとも1種の金属成分を含んでなることを特徴とする。\n\n【発明の効果】\n\n【0006】\n\n本発明によれば、優れた接着信頼性を確保したままAl被膜の孔食の発生を抑制してその耐食性の向上が図られた耐食性希土類系永久磁石およびその製造方法を提供することができる。\n\n【発明を実施するための最良の形態】\n\n【0007】\n\n本発明の耐食性希土類系永久磁石の製造方法において、磁石の表面へのAl被膜の形成は、どのような方法で行ってもよいが、希土類系永久磁石とAl被膜の双方が酸化腐食されやすい性質を有することに鑑みれば、気相成長法により行うことが望ましい。気相成長法としては、真空蒸着法やイオンプレーティング法やスパッタリング法などが挙げられるが、形成される被膜の緻密性や膜厚均一性、被膜形成速度などに鑑みれば、真空蒸着法またはイオンプレーティング法を採用することが望ましい。Al被膜の形成条件は、採用する方法における一般的な条件に従ったものでよい。なお、Al被膜を形成する前に、磁石の表面に対し、洗浄、脱脂、スパッタリングなどの公知の清浄化処理を施してもよいことは言うまでもない。Al被膜の膜厚は3μm〜25μmが望ましく、5μm〜20μmがより望ましい。膜厚が3μmを下回ると、次に行うAl被膜の表面のZnおよび/またはSnによる置換処理の際、Al被膜が溶解してしまうことで、Al被膜の耐食性の向上を図ることができなくなる恐れがある一方、膜厚が25μmを上回ると、Al被膜を形成するのに長時間を費やすことになることで生産性に劣る恐れがある他、磁石の有効体積の確保が困難になる恐れがある。なお、Al被膜は、Alを主体とするCuやMgなどとの合金被膜であってもよい。また、混入不可避な金属を不純物として含んでいてもよい。\n\n【0008】\n\nAl被膜の表面のZnおよび/またはSnによる置換処理は、公知の亜鉛置換処理や錫置換処理や錫·亜鉛置換処理などであってよい。Znおよび/またはSnによる置換処理に用いる処理液としては、Znイオンおよび/またはSnイオンを含み、水酸化ナトリウムなどのアルカリでpHを11〜14に調整したものが挙げられる。処理液には、Al被膜の表面の被覆性を向上させるために、Feイオン、Niイオン、Coイオン、Cuイオンから選ばれる少なくとも1種の金属イオンを含ませてもよい。このような処理液の調製は、例えば、水酸化ナトリウム水溶液に、酸化亜鉛および/または酸化錫、さらに、塩化第二鉄、硫酸ニッケル、硫酸コバルト、硫酸銅から選ばれる少なくとも1種の金属塩を溶解することで行えばよい(このような処理液は市販もされている:例えば上村工業社製の商品名AZ301やAZ401など)。処理液中のこれらの金属イオンの濃度は、Al被膜の表面での置換反応を均一に起こすためには、総金属イオン濃度として1g/L〜150g/Lが望ましく、5g/L〜100g/Lがより望ましい。なお、処理液には、その安定化を図ることなどを目的として各種の添加剤を添加してもよい。\n\n【0009】\n\nAl被膜の表面のZnおよび/またはSnによる置換処理は、例えば、上記の(1)Znイオンおよび/またはSnイオンと(2)Feイオン、Niイオン、Coイオン、Cu\n\nイオンから選ばれる少なくとも1種の金属イオンを含む処理液に、磁石の表面にAl被膜を形成した希土類系永久磁石を浸漬することで行えばよい。こうすることで、Al被膜の表面に形成されている不動態被膜を剥離し、新たに露出させた活性な表面に金属イオンを置換析出させ、(1)Znおよび/またはSnと(2)Fe,Ni,Co,Cuから選ばれる少なくとも1種の金属成分を含んでなる置換処理層を形成する。この際、処理液の温度は、室温〜50℃とすることが望ましい。処理液の温度が室温を下回ると、Al被膜の表面での置換反応を均一に起こすことが困難になる恐れがある一方、処理液の温度が50℃を上回ると、置換反応が過激に起こることで均一な置換処理層を形成することが困難になる恐れがある。また、処理時間は5秒〜300秒とすることが望ましい。処理時間が5秒を下回ると、置換処理層が十分に形成されない恐れがある一方、処理時間が300秒を上回ると、Al被膜の溶解が進行し、場合によっては磁石の表面が露出することで磁石の腐食が起こったり、均一な置換処理層を形成することが困難になったりする恐れがある。こうして形成される置換処理層は、形成された置換処理層の表面にさらに置換処理層を構成する成分が析出することができるので、クロム酸塩被膜と異なって厚層化を図ることができることから、Al被膜にドロップレットの発生と欠落による欠陥部分が存在しても、その部分に対する封孔効果に優れる。なお、Al被膜の表面のZnおよび/またはSnによる置換処理を行う前に、Al被膜の表面に対し、洗浄、脱脂、スパッタリングなどの公知の清浄化処理を施してもよいことは言うまでもない。また、Al被膜の表面をエタノールなどの有機溶剤を用いて脱脂した後、リン酸ナトリウムや炭酸ナトリウムと界面活性剤を含むアルカリ溶液で脱脂し、さらに、リン酸ナトリウムと炭酸ナトリウムと水酸化ナトリウムを含むアルカリ溶液でエッチングしてから、硝酸水溶液や硫酸水溶液に浸漬してスマット除去を行ってもよい。また、いったん形成した置換処理層の表面を硝酸で軽くエッチングした後、再度、置換処理層を形成するようにすれば、Al被膜の表面により均一な置換処理層を形成することができる。\n\n【0010】\n\nこうして形成される置換処理層の層厚は、0.05μm〜5μmであることが望ましい。層厚が0.05μmを下回ると、次の工程で、希土類系永久磁石の表面に形成したAl被膜の表面に、密着性に優れた、構成成分として三価クロムと炭素を含み、六価クロムフリーの化成処理被膜を形成することが困難になる恐れや、Al被膜に微小なピンホールが存在する場合、置換処理層でピンホールを覆うことができないことで、Al被膜の耐食性の向上を図ることが困難になる恐れがある一方、層厚が5μmを上回ると、置換処理層の強度が低下し、置換処理層がその機能を十分に発揮することができなくなる恐れがある。なお、置換処理層の層厚は、処理液の温度やpHの他、処理時間(処理液への浸漬時間)や処理回数(処理液への浸漬回数)により調整することができる。\n\n【0011】\n\nAl被膜の表面をZnおよび/またはSnによる置換処理をした後に行う、構成成分として三価クロムと炭素を含み、六価クロムフリーの化成処理被膜の形成は、例えば、(1)三価クロムの硝酸塩や硫酸塩などと(2)コハク酸、リンゴ酸、マロン酸、シュウ酸などのカルボン酸やこれらの塩(ナトリウム塩やカリウム塩など)を水に溶解して調製した処理液に、Al被膜の表面のZnおよび/またはSnによる置換処理に基づく置換処理層を形成した希土類系永久磁石を浸漬することで、置換処理層に含まれるZnやSnが溶出することによるpH変動に基づいて、処理液中においてカルボン酸と安定な錯体を形成している三価クロムイオンを遊離させ、置換処理層の表面に三価クロムの水酸化物を生成沈着させることで行えばよい。こうして形成される化成処理被膜は、被膜中で三価クロムとの塩などの形態で存在するカルボン酸に由来する炭素を構成成分として含む。また、こうして形成される化成処理被膜は、さらに構成成分としてCo,Mo,W,Ti,Zr,Mn,Feから選ばれる少なくとも1種の金属成分を含んでいてもよい。このような金属成分は、遊離のカルボン酸と水に難溶乃至不溶の塩を形成することにより、カルボン酸塩の形態で化成処理被膜に含まれる他、時には置換処理層に含まれるZnやSnとの置換反応によって析出する金属結晶として化成処理被膜に含まれることで、化成処理被膜の厚膜化\n\nに寄与する。また、このようなカルボン酸塩などの生成は、置換処理層の表面への三価クロムの水酸化物の生成沈着を促進することでも、化成処理被膜の厚膜化に寄与する。構成成分として三価クロムと炭素に加え、Co,Mo,W,Ti,Zr,Mn,Feから選ばれる少なくとも1種の金属成分を含み、六価クロムフリーの化成処理被膜の形成は、例えば、(1)三価クロムの硝酸塩や硫酸塩などと(2)コハク酸、リンゴ酸、マロン酸、シュウ酸などのカルボン酸やこれらの塩(ナトリウム塩やカリウム塩など)と(3)Co,Mo,W,Ti,Zr,Mn,Feの硝酸塩や硫酸塩を水に溶解して調製した処理液に、Al被膜の表面のZnおよび/またはSnによる置換処理に基づく置換処理層を形成した希土類系永久磁石を浸漬することで行えばよい。処理液のpHは1〜5が望ましく、3〜4.5であることがより望ましい。pHが1を下回ると、置換処理層の表面への三価クロムの水酸化物の生成沈着効率が低下する恐れがある一方、pHが5を上回ると、処理液中における三価クロムのカルボン酸錯体の安定性が低下することで、処理液自体の安定性が低下する恐れがある。処理液の温度は10℃〜80℃とすることが望ましく、25℃〜40℃とすることがより望ましい。温度が10℃を下回ると、置換処理層の表面への三価クロムの水酸化物の生成沈着効率が低下する恐れがある一方、温度が80℃を上回ると、化成処理反応が過激に起こることで均一な化成処理被膜を形成することが困難になる恐れがある他、処理液からの水分蒸発が顕著となり、処理液組成に変動をきたしやすく、安定操業が困難になる恐れがある。また、処理時間は5秒〜300秒とすることが望ましい。なお、処理液には、その安定化を図ることなどを目的として各種の添加剤を添加してもよい。\n\n【0012】\n\nこうして形成される化成処理被膜は、Al被膜の表面のZnおよび/またはSnによる置換処理に基づく置換処理層の表面での化成処理反応による反応性被膜であるが、それ自体が水に難溶であり、長期に亘って水分に対して変質が少なく腐食しにくい性質を有する。また、こうして形成される化成処理被膜は、Al被膜の表面のZnおよび/またはSnによる置換処理に基づく置換処理層の表面に形成されることで、均質性に優れたものである。従って、この化成処理被膜は、これらの特性が相まって、希土類系永久磁石に対して優れた耐食性を付与するものとなる。また、その表面は適度な粗度を有することから、アンカー効果に基づいて優れた接着信頼性を有する。なお、万が一、この化成処理被膜に欠陥が生じたとしても、この化成処理被膜が自己修復作用を有することに加え、Al被膜の表面をZnおよび/またはSnによる置換処理をしたことで、Al被膜の表面には犠牲防食作用が付加されていることから、希土類系永久磁石の腐食を効果的に防止することができる。\n\n【0013】\n\nこうして形成される化成処理被膜の膜厚は、0.01μm〜1μmであることが望ましい。膜厚が0.01μmを下回ると、磁石の表面に形成したAl被膜の耐食性の向上に寄与しなくなる恐れがある一方、膜厚が1μmを上回ると、その形成過程において処理液中の三価クロムイオンの濃度が大きく変動してしまうことで長期に亘る安定した生産が困難になる恐れがある。化成処理被膜の膜厚は、処理液の温度やpHの他、処理時間(処理液への浸漬時間)や処理回数(処理液への浸漬回数)により調整することができる。なお、この化成処理被膜は、Al被膜の表面のZnおよび/またはSnによる置換処理に基づく置換処理層の表面での化成処理反応により形成されるものであるので、Al被膜の表面のZnおよび/またはSnによる置換処理に基づく置換処理層を形成した希土類系永久磁石を処理液に浸漬することで、置換処理層が溶解してしまい、見かけ上、Al被膜の表面に直接形成される場合と、置換処理層が溶解しきれずに残存することで、Al被膜の表面に置換処理層を介して形成される場合とがある。\n\n【実施例】\n\n【0014】\n\n以下、本発明を実施例によってさらに詳細に説明するが、本発明はこれに限定して解釈されるものではない。なお、以下の実施例は、例えば、米国特許4770723号公報や\n\n米国特許4792368号公報に記載されているようにして、公知の鋳造インゴットを粉砕し、微粉砕後に成形、焼結、熱処理、表面加工を行うことによって得られた17Nd-1Pr-75Fe-7B組成(at%)の縦27mm×横15mm×高さ2mm寸法の焼結磁石(以下、磁石体試験片と称する)を用いて行った。\n\n【0015】\n\n実験A:耐食性希土類系永久磁石の製造\n\n工程1:磁石体試験片の表面へのAl被膜の形成\n\n自体公知の表面処理装置(内容積2.2m3)の処理室(真空槽)内に磁石体試験片を収容した後、内部の全圧が1.0×10-1Paになるまで真空排気した。その後、真空槽内にArガスを全圧が1.0MPaとなるように導入し、スパッタリングを行って磁石体試験片の表面を清浄化した。その後、磁石体試験片に電圧1.5kVを印加し、Alワイヤを加熱して溶融し、蒸発させてイオン化し、イオンプレーティング法により、その表面に20分で膜厚が20μmのAl被膜を形成した(N=3の平均値)。\n\n【0016】\n\n工程2:Al被膜の表面の亜鉛置換処理\n\n工程1にて磁石体試験片の表面に形成したAl被膜の表面を、自体公知のピーニング処理を行って平滑化した後、前処理としてエタノールで脱脂してから、5種類の条件にて表面にAl被膜を形成した磁石体試験片を亜鉛置換処理液に浸漬することで、Al被膜の表面の亜鉛置換処理を行った。用いた亜鉛置換処理液は、酸化亜鉛の濃度が100g/L、塩化第二鉄の濃度が10g/L、ロッシェル塩の濃度が10g/L、水酸化ナトリウムの濃度が525g/Lになるように各成分を水に溶解して調製した(pH11.8、亜鉛置換処理液中のZnイオンとFeイオンの合計濃度は83.7g/L)。得られた結果(サンプル1〜サンプル5)を表1に示す。\n\n【0017】\n\n【表1】\n\n\n\n【0018】\n\n表1から明らかなように、処理時間を変更することで、亜鉛置換処理層の層厚を制御できることがわかった。なお、亜鉛置換処理層の層厚は、亜鉛置換処理層の形成前後のサンプルを破断し、EPMA(EPM-810:島津製作所社製,以下同じ)を用いて亜鉛(ZnKα)を検出することで測定した(N=3の平均値)。また、亜鉛置換処理層の形成前後のサンプルを破断し、EPMAを用いて鉄(FeKα)を検出することで、亜鉛置換処理層に鉄が含まれていることが確認できた。\n\n【0019】\n\n工程3:化成処理被膜の形成による耐食性希土類系永久磁石の製造\n\n工程2にて得られたサンプル1、サンプル2、サンプル3を、それぞれ3種類の条件にて処理液に浸漬することで、亜鉛置換処理層の表面に化成処理被膜を形成した。用いた処理液は、硝酸クロム(III)の濃度が25g/L、硝酸コバルトの濃度が3g/L、硫酸銅5水和物の濃度が0.004g/L、硝酸銀の濃度が0.05g/L、硝酸ナトリウムの濃度が2g/L、コハク酸の濃度が20g/Lになるように各成分を水に溶解し、水酸化ナトリウムでpHを4に調整して調製した。得られた結果(実施例1〜実施例9)を\n\n表2に示す。\n\n【0020】\n\n【表2】\n\n\n\n【0021】\n\n表2から明らかなように、実施例1〜実施例9のすべてにおいて、三価クロムイオンを含む処理液から、亜鉛置換処理層の表面に、膜厚が0.01μm〜0.1μmの、三価クロムを含み、六価クロムフリーの、化成処理被膜を形成することができた。なお、化成処理被膜の膜厚は、化成処理被膜の形成前後のサンプルを破断し、EPMAを用いてクロム(CrKα)を検出することで測定した。また、化成処理被膜の形成前後のサンプルを破断し、EPMAを用いて、コバルト(CoKα)を検出することで化成処理被膜にコバルトが含まれていることが、炭素(CKα)を検出することで化成処理被膜に炭素が含まれていることが確認できた。なお、実施例1〜実施例3において製造した耐食性希土類系永久磁石では、工程2で形成した亜鉛置換処理層の層厚が薄いために、化成処理被膜を形成した後には亜鉛置換処理層は溶解してほとんど残存しなかったが、実施例4〜実施例9において製造した耐食性希土類系永久磁石では、工程2で形成した亜鉛置換処理層の層厚が厚いために、化成処理被膜を形成した後にも亜鉛置換処理層が残存していることが、化成処理被膜の形成前後のサンプルを破断し、EPMAを用いて亜鉛(ZnKα)を検出することで確認できた。\n\n【0022】\n\n実験B:製造した耐食性希土類系永久磁石の耐食性の評価\n\n実験Aの実施例1〜実施例9において製造した、表面にAl被膜を形成した後、その表面を亜鉛置換処理をしてから化成処理被膜を形成してなる磁石体試験片(耐食性希土類系永久磁石)に対し、JIS  Z  2371に記載の塩水噴霧試験を1000時間行うことでその耐食性を評価した。その結果を、実験Aの工程1において得た表面に膜厚が20μmのAl被膜を形成した磁石体試験片(比較例1)と、実験Aの工程2において得たサンプル1、サンプル2、サンプル3と、特開2000-150216号公報に記載の方法に従って、実験Aの工程1において得た表面に膜厚が20μmのAl被膜を形成した磁石体試験片を、日本パーカライジング社製のパルコート3756MAとパルコート3756MBを用いて調製した処理液に浸漬して、Al被膜の表面にジルコニウム含有化成処理被膜を形成した磁石体試験片(比較例2)と、実験Aの工程1において得た表面に膜厚が20μmのAl被膜を形成した磁石体試験片を、日本ペイント社製のアサルーフ600Nを用いて調製した処理液に浸漬して、Al被膜の表面に六価クロムを含むクロム酸塩被膜を形成した磁石体試験片(比較例3)の耐食性の評価の結果とともに表3に示す。\n\n【0023】\n\n【表3】\n\n\n\n【0024】\n\n表3から明らかなように、塩水噴霧試験においては、比較例1では、試験開始から24時間経過後に孔食の発生が目立ち始め、早期に全面赤錆発生に至った。サンプル1、サンプル2、サンプル3では、試験開始から24時間経過後に亜鉛の溶出による白錆が発生し、100時間経過後に全面赤錆発生に至った。比較例2では、試験開始から100時間経過後に孔食と点錆の発生が目立ち始め、250時間経過後に全面赤錆発生に至った。比較例3では、一部で亜鉛の溶出による白錆の発生が認められたものの、試験開始から1000時間経過後も全面赤錆発生には至らなかった。実施例1〜実施例3において製造した耐食性希土類系永久磁石では、工程2で形成した亜鉛置換処理層の層厚が薄いために、化成処理被膜を形成した後には亜鉛置換処理層は溶解してほとんど残存しなかったが、試験開始から100時間経過後に亜鉛の溶出による白錆の発生が認められたものの、試験開始から1000時間経過後も全面赤錆発生には至らなかった。実施例4〜実施例9において製造した耐食性希土類系永久磁石では、一部で亜鉛の溶出による白錆の発生が認められたが、試験開始から1000時間経過後も全面赤錆発生には至らなかった。よって、実施例1〜実施例9において製造したいずれの耐食性希土類系永久磁石も、実用上極めて優れた耐食性を有することがわかった。なお、実施例1〜実施例9において製造したいずれの耐食性希土類系永久磁石も、試験終了後に優れた接着信頼性を有していた(エポキシ系接着剤との接着信頼性の評価により確認)。\n\n【0025】\n\n実験C:製造した耐食性希土類系永久磁石の過酷環境下における耐孔食性の評価\n\n実験Aの実施例4〜実施例9において製造した、表面にAl被膜を形成した後、その表面を亜鉛置換処理をしてから水に難溶乃至不溶の無機物被膜を形成してなる磁石体試験片(耐食性希土類系永久磁石)に対し、過飽和高温高圧試験(PCT:Pressure  Cooker  Test)により耐孔食性を評価した。耐孔食性の評価は、プレッシャー\n\nクッカー試験機(TPC-411:TABAI社製)を用い、温度120℃×相対湿度98%以上×圧力0.2MPaの条件下で12時間放置することで行った。その結果を、実験Aの工程1において得た表面に膜厚が20μmのAl被膜を形成した磁石体試験片(比較例1)と、実験Aの工程2において得たサンプル1、サンプル2、サンプル3と、特開2000-150216号公報に記載の方法に従って、実験Aの工程1において得た表面に膜厚が20μmのAl被膜を形成した磁石体試験片を、日本パーカライジング社製のパルコート3756MAとパルコート3756MBを用いて調製した処理液に浸漬して、Al被膜の表面にジルコニウム含有化成処理被膜を形成した磁石体試験片(比較例2)と、実験Aの工程1において得た表面に膜厚が20μmのAl被膜を形成した磁石体試験片を、日本ペイント社製のアサルーフ600Nを用いて調製した処理液に浸漬して、Al被膜の表面に六価クロムを含むクロム酸塩被膜を形成した磁石体試験片(比較例3)の耐孔食性の評価の結果とともに表4に示す。\n\n【0026】\n\n【表4】\n\n\n\n【0027】\n\n表4から明らかなように、比較例1〜比較例3とサンプル1では、試験終了後に多数の孔食の発生が認められた。サンプル2とサンプル3では、孔食の発生は認められなかったが、多数の白錆が認められた。実施例4〜実施例9において製造した耐食性希土類系永久磁石では、試験終了後に孔食の発生は認められず、実用上極めて優れた耐孔食性を示した。なお、実施例4〜実施例9において製造したいずれの耐食性希土類系永久磁石も、試験終了後に優れた接着信頼性を有していた(エポキシ系接着剤との接着信頼性の評価により確認)。\n\n【産業上の利用可能性】\n\n【0028】\n\n本発明は、優れた接着信頼性を確保したままAl被膜の孔食の発生を抑制してその耐食性の向上が図られた耐食性希土類系永久磁石およびその製造方法を提供することができる点において産業上の利用可能性を有する。', '【技术领域】\n\n【0001】\n\n耐腐蚀性稀土永磁体及其制造方法技术领域本发明涉及耐腐蚀性稀土永磁体及其制造方法。\n\n发明背景\n\n【0002】\n\n基于稀土的永磁体,例如由ND-Fe-B基永磁体表示的R-Fe-B永磁体,今天在各种领域中使用,因为它们具有高磁性。然而,稀土基永磁体包括在大气中容易氧化腐蚀的稀土元素。因此,当使用时无表面处理时,由于轻微酸,碱或湿度的影响,导致锈蚀,因此,耐磁性可能会劣化和变化,腐蚀从表面进行。它会是劣化和变化。它将是。此外,如果在诸如磁路的装置中的磁体中发生生锈,则锈蚀可以散布到污染的外围部件。因此,考虑到上述点,为了通过真空蒸发,离子镀方法和溅射法等赋予稀土基永磁体的耐腐蚀性,作为表面上的耐腐蚀性涂层。 。它是为了形成。 Al涂层具有优异的耐腐蚀性和质量生产率,并且具有优异的粘合性可靠性,在部件掺入时所需的粘合剂(在粘合剂之前,由于剥离不太可能与粘合剂发生剥离,因此它是广泛的施加到需要具有强粘合强度的稀土永磁体。\n\n顺便说一下,尽管稀土基永磁磁铁的使用面积扩展,但磁铁所需的耐腐蚀性变得越来越多样化。因此,存在诸如Al涂层的缺乏,具有优异的耐腐蚀性,高温和高湿度性能,耐盐性喷涂性能和耐酸性。然而,尽管通过气相生长方法形成的Al涂层通过Al的金属的金属而氧化,但是,如果Al涂层表面上的钝化涂层是钝化涂层,则表面的表面被氧化并用钝化涂层覆盖。从那里损坏腐蚀朝向磁铁(孔食)的表面进行了进展,并且它具有腐蚀到达磁体的表面的性质。另外,通过气相生长形成的Al膜有时会导致缺陷部分,例如由于液滴的扩散(熔融颗粒)而导致诸如薄部分的缺陷部分和诸如薄部分的薄部分。虽然有这样的一种引起这种东西的Al涂层,进一步促进了斑织物的产生。虽然今天技术形成的Al涂层的耐腐蚀性非常好,但这些腐蚀总是可以发生这种腐蚀,因此如果您没有建立解决方案,则可以提高Al涂层的耐腐蚀性。不能。\n\n作为上述问题的解决方案,它是一种加强和补充Al涂层耐腐蚀性的方法\n\n结果,例如,通过专利文献1中描述的化学转化处理反应,存在能够表面改性的铝 - 铬酸铝处理方法。然而,该方法是使用含有六价铬或氟离子的处理液与含有六价铬或氟离子的氟离子蚀刻铬离子的铬酸盐涂层,这对于环境和人体不希望,并形成铬酸盐薄膜。将处理液中含有的六价铬掺入铬涂膜中,存在对环境的不利影响和人体的问题,以及废液治疗复杂的问题。是。因此,该方法今天不一定是期望的方法。另外,由于铬酸盐膜是通过化学转化处理反应的反应膜在Al涂层的表面上,因此难以实现增厚,并且由于液滴的产生和损失,缺陷部分难以实现,有一个不能充分维护零件是密封和耐腐蚀性的问题。因此,可以对铝 - 铬酸铝处理方法进行优异的溶液,这是优异的溶液。\n\n专利文献1日本专利公开号6-66173\n\n发明的描述\n\n本发明要解决的问题\n\n【0003】\n\n因此,本发明的目的是提供耐腐蚀稀土永磁体和通过抑制Al涂层的蚀的产生而制造耐腐蚀性的方法,同时确保优异的粘合可靠性,并且改善耐腐蚀性。。\n\n[解决问题的手段]\n\n【0004】\n\n由于表现了各种检查,本发明人在形成在稀土永磁体的表面上形成的Al涂层的表面之后,在稀土涂层的表面之后进行替代处理,然后通过形成六价化合物无铬化学转化处理涂料用铬和碳,抑制了Al薄膜的蚀刻的产生,同时确保了优异的粘合可靠性,而不会对环境和人体产生不利影响。并且已经发现可以提高耐腐蚀性。\n\n【0005】\n\n基于上述研究结果制备的本发明的耐腐蚀稀土永磁体如权利要求1所述,烧结磁铁在地面通过气相生长,膜厚度为3μm至25μm在形成Al涂层之后,表面的表面被Zn和/或Sn代替,然后通过三价铬和作为组分的碳,形成六价铬 - 无铬化学转化处理涂层。它将是。\n\n2.根据权利要求1的权利要求1的耐腐蚀稀土永磁体选自Co,Mo,W,Ti,Zr,Mn,Fe作为根据权利要求1的耐腐蚀性稀土的永磁体的组件。其特征在于它包含至少一个金属组分。\n\n4.根据权利要求1或2的耐腐蚀稀土永磁体是根据权利要求1或2的耐腐蚀稀土基永磁体,以及Al涂层表面的Al涂层和/或Sn取代的表面的取代和/或SN。它的特征在于基于处理具有替代处理层。\n\n根据权利要求4的耐腐蚀稀土永磁体是根据权利要求3(1)Zn和/或Sn和(2)Fe,Ni,Co,Cu的耐腐蚀稀土永磁体,其特征在于它包括在选择至少一个金属组分。\n\n此外,根据权利要求5所述的耐腐蚀性稀土永磁体的特征在于,所述化学转化处理涂层的膜厚度在根据权利要求1至4中任一项所述的耐腐蚀稀土永磁体中的0.01μm至1μm 。。\n\n此外,根据本发明的制造耐腐蚀稀土永磁体的方法如权利要求6所述,烧结磁铁在地面通过气相生长,膜厚度为3μm至25μm在形成Al涂层之后,其表面被Zn和/或Sn取代,其特征在于,其特征在于,其特征在于形成作为组分的六价铬的无铬化学转化处理涂料,以及六价无铬化学转化治疗膜。。\n\n8.根据权利要求7所述的制造方法,在根据权利要求6所述的制造方法中,至少选自Co,Mo,W,Ti,Zr,Mn,Fe作为组分作为组分。\n\n其特征在于它包括一个金属部件。\n\n在根据权利要求8的制造方法中,在根据权利要求6或7的制造方法中,在Al涂层的表面上具有0.05μm至5μm的层厚度为0.05μm至5μm的替代处理层。成面后,在表面的表面上形成化学转化处理涂层。\n\n11.根据权利要求9所述的制造方法是根据权利要求8所述的制造方法,其中所述取代处理层是(1)Zn和/或Sn和(2)Fe,Ni,Co和Cu。其特征在于它包括金属部件。\n\n【发明效果】\n\n【0006】\n\n根据本发明,可以提供耐腐蚀的稀土永磁体和通过抑制Al涂层的蚀的产生以及提高耐腐蚀性而制造耐腐蚀性的方法,同时确保优异的粘附可靠性。\n\n实施本发明的最佳方式\n\n【0007】\n\n在制造本发明的耐腐蚀稀土永磁体的方法中,可以以任何方式进行磁体表面上的Al涂层的形成,但是稀土永磁体和Al涂层易于腐蚀并腐蚀。鉴于具有,希望通过气相沉积进行。气相生长方法的实例包括真空蒸发,离子电镀方法,溅射方法等。希望采用电镀方法。 Al涂层的形成条件可以根据待采用的方法中的一般条件。不用说,在形成Al涂层之前,可以对磁体的表面进行已知的清洁处理,例如洗涤,脱脂和溅射。 Al涂层的膜厚度优选为3μm至25μm,更理想为5μm至20μm。当薄膜厚度低于3μm时,Al膜在随后的替换处理中溶解在待进行上述Al涂层的Al涂层表面的后续替代处理中,使Al涂层的耐腐蚀性不能是改善。另一方面,如果膜厚度超过25μm,则通过花费长时间形成Al涂层,它可以不如生产率,并且存在磁体的有效体积可能困难的风险。。 Al涂层可以是Cu或Mg的合金涂层,其主要由Al组成。另外,混合金属可以包含为杂质。\n\n【0008】\n\n通过Al涂层表面的Zn和/或Sn的取代处理可以是已知的锌取代处理,锡取代的处理,锡,锌取代处理等。用于通过Zn和/或Sn取代处理的处理液的实例包括Zn离子和/或Sn离子,并通过用碱如氢氧化钠将pH调节至11-14获得的那些。处理液可包括至少一种选自Fe离子,Ni离子,Co离子和Cu离子的金属离子,以改善Al涂层的覆盖率。制备这种处理溶液,例如,氢氧化钠水溶液,氧化锌和/或氧化锡,进一步,氯化铁,硫酸镍,硫酸钴,硫酸钴,硫酸钴和至少一种选自硫酸铜的金属盐通过溶解来完成(这种加工液是可商购的:例如,由Uemura Industry Co.,Ltd。制造的商品名AZ301和AZ401)。处理溶液中这些金属离子的浓度优选为1g / l至150g / l,因为总金属离子浓度均匀地引起Al涂层表面的取代反应,5g / l至100g /更可取的。此外,可以将各种添加剂加入到处理液中以稳定其稳定性。\n\n【0009】\n\n用Zn和/或Sn在Al涂层表面上取代处理是,例如(1)Zn离子和/或Sn离子和(2)Fe离子,Ni离子,Co离子,Cu\n\n它可以通过浸没稀土永磁体,其中在磁体的表面上形成Al涂层浸入含有选自离子的至少一个金属离子的处理溶液中。通过这样做,剥离形成在Al涂层表面上的钝化涂层,用新暴露的活性表面替换金属离子,(1)Zn和/或Sn和(2)Fe,Ni,Co ,形成含有选自Cu的至少一种金属组分的替代处理层。此时,理想的是,处理液的温度在室温至50℃。当处理液的温度低于室温时,可能难以均匀地导致Al涂层表面上的取代反应,而处理液的温度超过50℃,则取代反应在自由基中发生替代反应。可能难以形成均匀的替代处理层。而且,希望处理时间为5秒至300秒。当处理时间小于5秒时,可以不充分形成替换处理层,而治疗时间超过300秒,则Al涂层的溶解,并且在某些情况下,磁体的表面暴露。腐蚀磁铁可能发生或可能变得难以形成均匀的替代处理层。由于以这种方式形成的位移处理层可以进一步沉淀构成替换处理层的组分,因此可以沉淀取代处理层,从而可以从铬酸盐涂层不同地实现厚度。如果由于存在缺陷部分在Al涂层中产生液滴和下降,对该部分的密封效果是优异的。不言而喻,可以在Al涂层的表面和/或Al涂层的表面上进行Al涂层的表面。此外,使用乙醇如乙醇如乙醇,脱脂的Al涂层的表面脱脂,然后用碱性溶液,进一步含有含有磷酸钠,碳酸钠和表面活性剂的碱性溶液,磷酸钠和碳酸钠和碳酸钠,用碱性蚀刻含有溶液,它可以浸入硝酸水溶液或硫酸水溶液中以除去Smack。另外,在用硝酸轻微蚀刻形成的替代处理层的表面之后,可以再次形成替代处理层,由此可以通过Al涂层的表面形成均匀的取代处理层。\n\n【0010】\n\n因此,形成的替代处理层的层厚度理想地是0.05μm至5μm。当层厚度低于0.05μm时,在稀土基永磁体的表面上形成的Al涂层的表面具有优异的粘附和碳,作为组分,并且六价铬免于自由。如果担心它变得难以形成涂膜膜,当Al涂层中存在微小针孔时,可以通过替代处理层改善Al涂层的耐腐蚀性,不能覆盖针孔。同时存在层厚度超过5μm的风险,更换处理层的强度降低,替换处理层可能无法充分地表现出其功能。替代处理层的层厚度可以通过处理液的温度和pH调节,并且可以通过处理时间(浸入处理液)或治疗次数(次数)来调节浸入处理液中)。\n\n【0011】\n\n在用Zn和/或Sn的替代处理后进行Al涂层的表面,并将三价铬和碳作为组分的形成,以及六价无铬的无铬化学转化涂层的形成是例如(1)三价用于处理过的溶液的铬Al涂层通过将羧酸如硝酸盐,硫酸盐等溶解羧酸,苹果酸,丙酸,丙酸,草酸和盐(如钠盐和钾盐)制备。通过浸入a通过Zn和/或Sn的基于稀土的永磁体由Sn的替代处理,它是基于通过在替代处理层中洗脱的pH或Sn的pH波动处理,其可以通过释放具有羧酸的三价铬离子来进行。酸和液体中的稳定复合物,在替代处理层的表面上形成和沉积三价氢氧化物。如此形成的化学转化膜含有衍生自羧酸衍生的羧酸,其盐形式存在于涂料中作为构成组分的三价铬。此外,形成的化学转化处理涂层可以进一步含有至少一种选自CO,Mo,W,Ti,Zr,Mn和Fe作为组分的金属组分。这种金属组分以羧酸盐形式的羧酸盐的形式含有,并且有时通过在水中形成差溶于或不溶的盐而有时包括在替代处理层中。有时Zn和Sn包含在替代处理层中作为金属的替代处理层用取代反应的取代反应沉淀晶体,化学处理涂层的厚度\n\n贡献此外,这种羧酸盐等也通过促进在替换处理层的表面上形成三价氢氧化物的形成而导致化学转化处理涂层的厚度。除了三价铬和碳作为组分之外,它还含有至少一种选自CO,Mo,W,Ti,Zr,Mn和Fe的金属组分,并且形成六价铬的无铬化学处理薄膜的形成是例如,(1)三价硝酸铬,硫酸铬(2)羧酸,如琥珀酸,苹果酸,丙酸,草酸和盐(如钠盐和钾盐)和(3)Co,Mo ,W,Ti,Zr,Mn,Fe-Fe,一种稀土系统,其基于Zn和/或Sn代替通过溶解硝酸盐和硫酸盐制备的治疗溶液中的Al涂层表面的替代处理层硫酸盐。它可以通过浸入永磁体来完成。处理液的pH优选优选为1至5,更希望为3至4.5。当pH下降到1时,可以减少三价铬的氢氧化物到替代处理层的表面,而pH超过5,处理液中的三价铬羧酸。通过降低稳定性复合物,可以减少治疗液体本身的稳定性。处理液的温度优选为10℃至80℃,更希望将25℃-40℃设定为40℃。当温度低于10℃时,可以减少将三价铬的氢氧化物的形成可以减少,而当温度超过80℃时,化学转化处理反应的温度发生在自由基。除了难以形成均匀的复合加工膜外,从处理液中蒸发的水分变得显着,并且易于改变加工液体组合物,并且稳定的操作可能困难。而且,希望处理时间为5秒至300秒。此外,可以将各种添加剂加入到处理液中以稳定其稳定性。\n\n【0012】\n\n由此形成的化学转化处理涂层是通过基于替代处理层的替代处理层的表面的表面的化学转化处理反应在替代处理层的表面上的化学转化处理反应的反应性涂层,但它在水中很差。是的,它具有难以腐蚀,并且难以腐蚀的性质长期腐蚀。此外,以这种方式形成的形成处理涂层通过基于Zn和/或Sn替代处理Al涂层表面的替代处理层的表面而形成优异的均匀性。因此,该化学加工膜具有这些特性的特性,具有相对于稀土基永磁体具有优异的耐腐蚀性。此外,由于表面具有适当的粗糙度,因此基于锚固效果具有优异的粘合性可靠性。另外,即使在该化学转化处理涂层中发生缺陷,该化学处理涂层也具有自修复作用,并且Al涂层的表面用Zn和/或Sn处理,Al涂层。由于表面牺牲腐蚀保护被添加到牺牲腐蚀的表面中,可以有效地防止稀土基永磁体的腐蚀。\n\n【0013】\n\n因此形成的化学转化处理膜的膜厚度理想地是0.01μm至1μm。当薄膜厚度低于0.01μm时,它可能没有有助于改善在磁体的表面上形成的Al涂层的耐腐蚀性,而膜厚度超过1μm,并且当膜厚度超过1μm时,三价在形成过程中处理液中的铬离子。由于浓度的情况,可以难以长期稳定的生产可能困难。化学转化处理膜的膜厚度可以通过处理液的温度和pH调节,并且可以通过处理时间(浸入处理液体)和治疗次数(浸入数量)来调节在治疗液中)。另外,由于基于Al涂层的表面的表面和/或基于SN的替代处理,因此通过基于Al涂层和/或替代处理层的表面的表面形成的化学转化处理反应形成。 Al涂层表面的Zn和/或者,通过浸入通过基于替代处理的替代处理层而形成的稀土永磁体,替代处理层溶解,可以直接形成通过在不溶解的不溶解的情况下保持替换处理层的涂层的表面,可以通过替换处理层在Al涂层的表面上形成。\n\n【例子】\n\n【0014】\n\n在下文中,将通过实施例更详细地描述本发明,但是本发明不旨在解释。在以下实施例中,例如,美国专利No.美国专利号4,770,723\n\n如美国专利No.4,792,368中所述,通过形成,烧结,热处理和表面处理在微粒(1at%)(以%)中使用烧结磁体(以下称为0.作为磁铁型试验片,宽度为27mm×宽度2mm尺寸。\n\n【0015】\n\n实验A:生产耐腐蚀稀土系统永磁体\n\n步骤1:磁铁样本表面上的Al涂层的形成\n\n本身已知的表面处理装置(内部体积2.2M3容纳在处理室(真空室)的磁体样品)后,内部总压力为1.0×10-1真空疏散Pa。此后,将Ar气体引入1.0MPa的真空罐中,并进行溅射以清洁磁体样品的表面。此后,将1.5kV的电压施加到磁体试验片上,并且将Al线加热,熔化,蒸发电​​离,并且通过离子在表面上形成具有20μm的膜厚度的Al膜电镀。(平均值为n = 3)。\n\n【0016】\n\n步骤2:锌取代Al涂层表面的替代处理\n\n在步骤1中形成在磁体样品的表面上形成的Al涂层的表面进行通过进行每种SE和平滑的切换处理进行,然后用乙醇作为预处理脱脂,然后五种类型的条件镀锌替代处理通过将磁体型试验片浸入其中在锌位移处理溶液中形成Al涂层来进行Al涂层的表面。所用锌取代处理溶液使得氧化锌的浓度为100克/升,氯化铁的浓度为10g / L,10g / L的Rochelle盐,氢氧化钠浓度为525克/升。通过将其溶解在水中(Zn离子的总浓度和在pH 11.8中的Fe离子和锌取代处理中的总浓度为83.7g / L)制备各组分。得到的结果(样品1至样品5)示于表1中。\n\n【0017】\n\n【表格1】\n\n\n\n【0018】\n\n从表1中明显看出,发现可以通过改变加工时间来控制锌替换处理层的层厚度。锌取代处理层的层厚度在形成锌位移层之前和之后破坏样品,并使用EPMA(EPM-810:Shimadzu Corporation,相同)检测锌(ZnKα)。测量(N =的平均值3)。此外,证实通过在形成锌取代处理层之前和之后,通过破坏样品,锌取代的处理层含有锌取代的处理层。\n\n【0019】\n\n第3步:通过形成化学转化处理涂料,生产耐腐蚀稀土永磁体\n\n通过浸入在步骤2中获得的样品1,样品2和样品3,在具有三种类型的条件下,在锌位移层的表面上形成化学转化处理膜。所用处理的溶液是浓度为25g / L的硝酸铬(III),3g / L硝酸钴,硫酸铜浓度为0.004g / L,硝酸银浓度为0.05克/升,将每个组分溶于水中的水中,使硝酸钠浓度为2g / L,琥珀酸为20g / L,用氢氧化钠将pH调节至4。得到的结果(实施例1至实施例9)\n\n表2显示。\n\n【0020】\n\n[表2]\n\n\n\n【0021】\n\n从表2中明显看出,在所有实施例1至9中,从含有三价铬离子的处理溶液中,锌取代处理层的表面为0.01μm至0.1μm的三价铬。六价铬自由的化学加工涂层可以形成。通过在形成化学转化处理膜之前和之后破碎样品,使用EPMA检测铬(CRKα)来测量化学转化处理膜的膜厚度。另外,在形成化学转化处理膜后的样品被破坏并使用EPMA通过检测碳(CKα)检测钴(CKα)来检测钴(COKα)。已经证实碳是化学转化中的碳处理涂层。在实施例1至3中制造的耐腐蚀稀土基永磁体中,由于在步骤2中形成的锌位移层的层厚度薄,在形成化学转化处理涂层之后溶解锌取代的处理层。然而,在实施例4-实施例9中制造的耐腐蚀性稀土永磁体中,在步骤2中形成的锌位移层的层厚度较厚之后,即使锌位移层保留,也可以形成化学转化处理膜并且在形成化学转化涂层之后,通过使用EPMA检测锌(ZnKα)来证实。\n\n【0022】\n\n实验B:耐腐蚀稀土耐腐蚀性耐腐蚀性制造的评价\n\n实验1至9的实验A.在表面上形成Al涂层后,然后通过锌替代处理形成表面的表面,磁铁型试验片(耐腐蚀性稀土系统永久)盐喷雾试验描述评估JIS Z 237110小时以通过在JIS Z 2371中描述的盐喷雾试验1000小时来评估耐腐蚀性。结果是磁体型试验片(比较例1)和样品1,样品2,在实验A的步骤2中获得的样品,磁体测试条(比较例1),以及实验A的步骤2在实验A的步骤1中获得的表面。根据JP-A-2000-150216中描述的方法,在实验A的步骤1中获得的表面上形成的磁铁型试验片,其中在步骤1中获得的表面是a的由Nippon Parkarizi制造的脉动3756 mA。磁体型试验片(比较例2),其中在Al涂层的表面上形成含锆的化学转化处理涂层并使用脉动3756 MB形成,膜厚度实验步骤1中获得的表面,将具有20μmAlAl涂层的Al涂层形成的磁体样品浸入使用由Nippon Paint制造的分子600N制备的处理液中,形成含有六价铬的铬酸盐涂层在Al涂层的表面上。表3作为评估磁体样品的耐腐蚀性(比较例3)。\n\n【0023】\n\n[表3]\n\n\n\n【0024】\n\n从表3中明显,在比较例1中,在比较例1中,在试验开始后24小时后开始的蚀使有利的发生,并且整个表面红色生锈早期发生。在样品1中,样品2和样品3,在试验开始后24小时后产生由于锌的洗脱而产生的白色锈,导致100小时后发生满量程的红色生锈。在比较例2中,从试验开始100小时后,蚀刻和生锈发生,在250小时后,在250小时后发生整个表面红锈。在比较例3中,虽然部分地观察到由于锌的洗脱而导致的白色锈,但即使在试验开始后1000小时后也没有达到整个表面红锈。实施例1-耐腐蚀稀土的基于基于基于基于基于地球的永磁体,其实施例3中制造的实例,因为在步骤2中形成的锌取代处理层的层厚度是薄的,在形成化学转化处理涂层之后溶解锌取代的处理层。虽然在那里几乎没有残留,尽管在试验开始后100小时后观察到由于锌的洗脱而发生的白色锈,即使在试验开始后1000小时后也没有达到整个表面红锈。实施例4在实施例9中制造的耐腐蚀稀土基永磁体,观察到由于锌的洗脱而导致的白色锈,但在试验完成后不超过1000小时。。因此,发现在实施例1至9中制造的任何耐腐蚀稀土永磁体也具有实际上优异且优异的耐腐蚀性。另外,在测试完成后,实施例1中制造的任何耐腐蚀稀土永磁体也具有优异的粘附可靠性(通过评估与环氧基粘合剂的粘附可靠性进行评估)。\n\n【0025】\n\n实验C:耐腐蚀稀土永磁体严重环境下的蚀性耐蚀性评价\n\n实施例4至9的实验A.在表面上形成Al涂层后,然后进行锌替代处理,然后形成易溶或不溶于水的无机物质涂层。通过超饱和的高温评价蚀性抗性。关于该件(耐腐蚀稀土永磁体)的高压试验(PCT)。蚀性抗性的大气是\n\n使用炊具试验机(TPC-411:Tabai Co.,Ltd。),它通过在120℃的温度的条件下静置12小时来进行。相对湿度为98%或更多×0.2MPa的情况。结果是磁体型试验片(比较例1)和样品1,样品2,在实验A的步骤2中获得的样品,磁体测试条(比较例1),以及实验A的步骤2在实验A的步骤1中获得的表面。根据JP-A-2000-150216中描述的方法,在实验A的步骤1中获得的表面上形成的磁铁型试验片,其中在步骤1中获得的表面是a的由Nippon Parkarizi制造的脉动3756 mA。磁体型试验片(比较例2),其中在Al涂层的表面上形成含锆的化学转化处理涂层并使用脉动3756 MB形成,膜厚度实验步骤1中获得的表面,将具有20μmAlAl涂层的Al涂层形成的磁体样品浸入使用由Nippon Paint制造的分子600N制备的处理液中,形成含有六价铬的铬酸盐涂层在Al涂层的表面上。表4作为评估磁体样本的蚀性电阻(比较例3)。\n\n【0026】\n\n表4.\n\n\n\n【0027】\n\n从表4中明显看出,对比例1至对比例3和样品1显示测试完成后的大量点击发育。在样品2和样品3中,没有观察到点蚀,但观察到大量的白色生锈。实施例4在实施例9中制造的耐腐蚀稀土永磁体中,未经认识到测试后未观察到点蚀食物的发生,并且它表现出实际上优异的耐咬合性。另外,在测试完成后,实施例4中制造的任何耐腐蚀性稀土永磁体也具有优异的粘附可靠性(通过评估与环氧基粘合剂的粘附可靠性评价进行确认)。\n\n【工业可用性】\n\n【0028】\n\n本发明具有耐腐蚀的稀土永磁体,其中抑制了Al涂层的蚀的产生,并且可以提供优异的粘合性可靠性,并且可以提供耐腐蚀性。具有上述可用性。');
INSERT INTO `os_patent_instruction_text` VALUES (13030, 22859, '【技術分野】\n\n【0001】\n\n本発明は、耐食性希土類系永久磁石およびその製造方法に関する。\n\n【背景技術】\n\n【0002】\n\nNd-Fe-B系永久磁石に代表されるR-Fe-B系永久磁石などの希土類系永久磁石は、高い磁気特性を有していることから、今日、様々な分野で使用されている。しかしながら、希土類系永久磁石は、大気中で酸化腐食されやすい希土類元素:Rを含む。それ故、表面処理を行わずに使用した場合には、わずかな酸やアルカリや水分などの影響によって表面から腐食が進行して錆が発生し、それに伴って、磁気特性の劣化やばらつきを招くことになる。さらに、磁気回路などの装置に組み込んだ磁石に錆が発生した場合、錆が飛散して周辺部品を汚染する恐れがある。そこで、上記の点に鑑み、希土類系永久磁石に耐食性を付与することを目的として、その表面に耐食性被膜としてのAl被膜を真空蒸着法やイオンプレーティング法やスパッタリング法などの気相成長法により形成することが行われている。Al被膜は、耐食性や量産性に優れていることに加え、部品組み込み時に必要とされる接着剤との接着信頼性に優れている(接着剤が本質的に有する破壊強度に達するまでに被膜と接着剤との間で剥離が生じにくい)ので、強い接着強度が要求される希土類系永久磁石に対して広く適用されている。\n\nところで、近頃、希土類系永久磁石の使用分野は拡大の一途を辿っており、それに伴い、磁石に求められる耐食性は、ますます厳しく多様化したものになってきている。従って、優れた耐食性を有するAl被膜といえども、耐高温高湿性能、耐塩水噴霧性能、耐酸性雨性能などの向上が望まれている。しかしながら、気相成長法で形成したAl被膜は、Alという金属の特性から、その表面が酸化して不動態被膜で覆われているが、Al被膜の表面の不動態被膜が損傷を受けると、そこから磁石の表面に向かって腐食が進行し(孔食)、やがて腐食が磁石の表面に到達してしまうという性質を有する。また、気相成長法で形成したAl被膜は、時として、ドロップレット(溶融粒子)の発生と欠落により、数十μmの広がりで被膜の存在しない部分や薄い部分などの欠陥部分が生じることがあるが、このようなことが起こったAl被膜では、孔食の発生はさらに促進される。今日の技術によって形成されるAl被膜の耐食性は非常に優れているものの、このような腐食は常に起こり得ることから、その解決策を確立しておかなければ、Al被膜の耐食性の向上を図ることはできない。\n\n以上のような問題に対する解決策として、Al被膜の耐食性を補強·補完する方法になり得るものとしては、例えば、特許文献1に記載されている、化成処理反応によりAl被膜の表面改質を行うことができるアルミ-クロメート処理方法がある。しかしながら、この方法は、環境や人体にとって望ましくない六価クロムやフッ素イオンを含む処理液を用\n\nい、Al被膜の表面をフッ素イオンでエッチングしながらクロム酸塩被膜を形成するものであるが、形成されたクロム酸塩被膜には処理液中に含まれていた六価クロムが取り込まれていることから、環境や人体に対する悪影響が懸念されるという問題があるとともに、廃液処理が複雑であるという問題がある。よって、この方法は、必ずしも今日において望ましい方法であるとは言えない。また、クロム酸塩被膜は、Al被膜の表面での化成処理反応による反応性被膜であるため、厚膜化を図ることが困難であり、ドロップレットの発生と欠落による欠陥部分に対しては、その部分を封孔して耐食性を補強·補完するといったことが十分にできないという問題がある。従って、アルミ-クロメート処理方法にとってかわることができる、優れた解決策が望まれている。\n\n【特許文献1】特公平6-66173号公報\n\n【発明の開示】\n\n【発明が解決しようとする課題】\n\n【0003】\n\nそこで本発明は、優れた接着信頼性を確保したままAl被膜の孔食の発生を抑制してその耐食性の向上が図られた耐食性希土類系永久磁石およびその製造方法を提供することを目的とする。\n\n【課題を解決するための手段】\n\n【0004】\n\n本発明者は、上記の点に鑑み種々の検討を行った結果、希土類系永久磁石の表面に形成したAl被膜の表面をZnおよび/またはSnによる置換処理をしてから、構成成分としてMg,Ca,Ba,Srから選ばれる少なくとも1種の金属のリン酸塩を含む、水に難溶乃至不溶の無機物被膜を形成することにより、環境や人体に対して悪影響を及ぼすことなく、優れた接着信頼性を確保したままAl被膜の孔食の発生を抑制してその耐食性の向上を図ることができることを見出した。\n\n【0005】\n\n上記の知見に基づいてなされた本発明の耐食性希土類系永久磁石は、請求項1記載の通り、焼結磁石の表面に気相成長法によって膜厚が3μm〜25μmであるAl被膜を形成した後、その表面をZnおよび/またはSnによる置換処理をしてから、構成成分としてMg,Ca,Ba,Srから選ばれる少なくとも1種の金属のリン酸塩を含む、水に難溶乃至不溶の膜厚が0.1μm〜5μm(但し0.1μmを除く)である無機物被膜を形成してなることを特徴とする。\n\nまた、請求項2記載の耐食性希土類系永久磁石は、請求項1記載の耐食性希土類系永久磁石において、無機物被膜がさらに構成成分としてMo,V,W,Tiから選ばれる少なくとも1種の金属成分を含んでなることを特徴とする。\n\nまた、請求項3記載の耐食性希土類系永久磁石は、請求項1または2記載の耐食性希土類系永久磁石において、Al被膜と無機物被膜の間に、Al被膜の表面のZnおよび/またはSnによる置換処理に基づく置換処理層を有してなることを特徴とする。\n\nまた、請求項4記載の耐食性希土類系永久磁石は、請求項3記載の耐食性希土類系永久磁石において、置換処理層が(1)Znおよび/またはSnと(2)Fe,Ni,Co,Cuから選ばれる少なくとも1種の金属成分を含んでなることを特徴とする。\n\n  また、本発明の耐食性希土類系永久磁石の製造方法は、請求項5記載の通り、焼結磁石の表面に気相成長法によって膜厚が3μm〜25μmであるAl被膜を形成した後、その表面をZnおよび/またはSnによる置換処理をしてから、構成成分としてMg,Ca,Ba,Srから選ばれる少なくとも1種の金属のリン酸塩を含む、水に難溶乃至不溶の膜厚が0.1μm〜5μm(但し0.1μmを除く)である無機物被膜を形成することを特徴とする。\n\nまた、請求項6記載の製造方法は、請求項5記載の製造方法において、無機物被膜がさらに構成成分としてMo,V,W,Tiから選ばれる少なくとも1種の金属成分を含んでなることを特徴とする。\n\nまた、請求項7記載の製造方法は、請求項5または6記載の製造方法において、Al被\n\n膜の表面に、Znおよび/またはSnによる置換処理に基づく層厚が0.05μm〜5μmの置換処理層を形成してから、その表面に、無機物被膜を形成することを特徴とする。\n\nまた、請求項8記載の製造方法は、請求項7記載の製造方法において、置換処理層が(1)Znおよび/またはSnと(2)Fe,Ni,Co,Cuから選ばれる少なくとも1種の金属成分を含んでなることを特徴とする。\n\n【発明の効果】\n\n【0006】\n\n本発明によれば、優れた接着信頼性を確保したままAl被膜の孔食の発生を抑制してその耐食性の向上が図られた耐食性希土類系永久磁石およびその製造方法を提供することができる。\n\n【発明を実施するための最良の形態】\n\n【0007】\n\n本発明の耐食性希土類系永久磁石の製造方法において、磁石の表面へのAl被膜の形成は、どのような方法で行ってもよいが、希土類系永久磁石とAl被膜の双方が酸化腐食されやすい性質を有することに鑑みれば、気相成長法により行うことが望ましい。気相成長法としては、真空蒸着法やイオンプレーティング法やスパッタリング法などが挙げられるが、形成される被膜の緻密性や膜厚均一性、被膜形成速度などに鑑みれば、真空蒸着法またはイオンプレーティング法を採用することが望ましい。Al被膜の形成条件は、採用する方法における一般的な条件に従ったものでよい。なお、Al被膜を形成する前に、磁石の表面に対し、洗浄、脱脂、スパッタリングなどの公知の清浄化処理を施してもよいことは言うまでもない。Al被膜の膜厚は3μm〜25μmが望ましく、5μm〜20μmがより望ましい。膜厚が3μmを下回ると、次に行うAl被膜の表面のZnおよび/またはSnによる置換処理の際、Al被膜が溶解してしまうことで、Al被膜の耐食性の向上を図ることができなくなる恐れがある一方、膜厚が25μmを上回ると、Al被膜を形成するのに長時間を費やすことになることで生産性に劣る恐れがある他、磁石の有効体積の確保が困難になる恐れがある。なお、Al被膜は、Alを主体とするCuやMgなどとの合金被膜であってもよい。また、混入不可避な金属を不純物として含んでいてもよい。\n\n【0008】\n\nAl被膜の表面のZnおよび/またはSnによる置換処理は、公知の亜鉛置換処理や錫置換処理や錫·亜鉛置換処理などであってよい。Znおよび/またはSnによる置換処理に用いる処理液としては、Znイオンおよび/またはSnイオンを含み、水酸化ナトリウムなどのアルカリでpHを11〜14に調整したものが挙げられる。処理液には、Al被膜の表面の被覆性を向上させるために、Feイオン、Niイオン、Coイオン、Cuイオンから選ばれる少なくとも1種の金属イオンを含ませてもよい。このような処理液の調製は、例えば、水酸化ナトリウム水溶液に、酸化亜鉛および/または酸化錫、さらに、塩化第二鉄、硫酸ニッケル、硫酸コバルト、硫酸銅から選ばれる少なくとも1種の金属塩を溶解することで行えばよい(このような処理液は市販もされている:例えば上村工業社製の商品名AZ301やAZ401など)。処理液中のこれらの金属イオンの濃度は、Al被膜の表面での置換反応を均一に起こすためには、総金属イオン濃度として1g/L〜150g/Lが望ましく、5g/L〜100g/Lがより望ましい。なお、処理液には、その安定化を図ることなどを目的として各種の添加剤を添加してもよい。\n\n【0009】\n\nAl被膜の表面のZnおよび/またはSnによる置換処理は、例えば、上記の(1)Znイオンおよび/またはSnイオンと(2)Feイオン、Niイオン、Coイオン、Cuイオンから選ばれる少なくとも1種の金属イオンを含む処理液に、磁石の表面にAl被膜を形成した希土類系永久磁石を浸漬することで行えばよい。こうすることで、Al被膜の表面に形成されている不動態被膜を剥離し、新たに露出させた活性な表面に金属イオンを置換析出させ、(1)Znおよび/またはSnと(2)Fe,Ni,Co,Cuから選ばれる少なくとも1種の金属成分を含んでなる置換処理層を形成する。この際、処理液の温\n\n度は、室温〜50℃とすることが望ましい。処理液の温度が室温を下回ると、Al被膜の表面での置換反応を均一に起こすことが困難になる恐れがある一方、処理液の温度が50℃を上回ると、置換反応が過激に起こることで均一な置換処理層を形成することが困難になる恐れがある。また、処理時間は5秒〜300秒とすることが望ましい。処理時間が5秒を下回ると、置換処理層が十分に形成されない恐れがある一方、処理時間が300秒を上回ると、Al被膜の溶解が進行し、場合によっては磁石の表面が露出することで磁石の腐食が起こったり、均一な置換処理層を形成することが困難になったりする恐れがある。こうして形成される置換処理層は、形成された置換処理層の表面にさらに置換処理層を構成する成分が析出することができるので、クロム酸塩被膜と異なって厚層化を図ることができることから、Al被膜にドロップレットの発生と欠落による欠陥部分が存在しても、その部分に対する封孔効果に優れる。なお、Al被膜の表面のZnおよび/またはSnによる置換処理を行う前に、Al被膜の表面に対し、洗浄、脱脂、スパッタリングなどの公知の清浄化処理を施してもよいことは言うまでもない。また、Al被膜の表面をエタノールなどの有機溶剤を用いて脱脂した後、リン酸ナトリウムや炭酸ナトリウムと界面活性剤を含むアルカリ溶液で脱脂し、さらに、リン酸ナトリウムと炭酸ナトリウムと水酸化ナトリウムを含むアルカリ溶液でエッチングしてから、硝酸水溶液や硫酸水溶液に浸漬してスマット除去を行ってもよい。また、いったん形成した置換処理層の表面を硝酸で軽くエッチングした後、再度、置換処理層を形成するようにすれば、Al被膜の表面により均一な置換処理層を形成することができる。\n\n【0010】\n\nこうして形成される置換処理層の層厚は、0.05μm〜5μmであることが望ましい。層厚が0.05μmを下回ると、次の工程で、希土類系永久磁石の表面に形成したAl被膜の表面に、密着性に優れた、構成成分としてMg,Ca,Ba,Srから選ばれる少なくとも1種の金属のリン酸塩を含む、水に難溶乃至不溶の無機物被膜を形成することが困難になる恐れや、Al被膜に微小なピンホールが存在する場合、置換処理層でピンホールを覆うことができないことで、Al被膜の耐食性の向上を図ることが困難になる恐れがある一方、層厚が5μmを上回ると、置換処理層の強度が低下し、置換処理層がその機能を十分に発揮することができなくなる恐れがある。なお、置換処理層の層厚は、処理液の温度やpHの他、処理時間(処理液への浸漬時間)や処理回数(処理液への浸漬回数)により調整することができる。\n\n【0011】\n\nAl被膜の表面をZnおよび/またはSnによる置換処理をした後に行う、構成成分としてMg,Ca,Ba,Srから選ばれる少なくとも1種の金属のリン酸塩を含む、水に難溶乃至不溶の無機物被膜の形成は、例えば、(1)Mg,Ca,Ba,Srから選ばれる少なくとも1種の金属の硝酸塩や硫酸塩などと(2)リン酸、亜リン酸、次亜リン酸、ピロリン酸、これらの塩(ナトリウム塩やカリウム塩など)から選ばれる少なくとも1種を水に溶解して調製した処理液に、Al被膜の表面のZnおよび/またはSnによる置換処理に基づく置換処理層を形成した希土類系永久磁石を浸漬することで行えばよい。こうして形成される無機物被膜は、さらに構成成分としてMo,V,W,Tiから選ばれる少なくとも1種の金属成分を含んでいてもよい。このような金属成分は、無機物被膜の厚膜化やクラック発生の防止などに寄与する。(1)Mg,Ca,Ba,Srから選ばれる少なくとも1種の金属のリン酸塩と(2)Mo,V,W,Tiから選ばれる少なくとも1種の金属成分を含む、水に難溶乃至不溶の無機物被膜の形成は、例えば、(1)Mg,Ca,Ba,Srから選ばれる少なくとも1種の金属の硝酸塩や硫酸塩などと(2)リン酸、亜リン酸、次亜リン酸、ピロリン酸、これらの塩(ナトリウム塩やカリウム塩など)から選ばれる少なくとも1種と(3)モリブデン酸塩、バナジン酸塩、タングステン酸塩、チタン酸塩から選ばれる少なくとも1種の金属酸塩(ナトリウム塩やカリウム塩など)を水に溶解して調製した処理液に、Al被膜の表面のZnおよび/またはSnによる置換処理に基づく置換処理層を形成した希土類系永久磁石を浸漬することで行えばよい。処理液のpHは1〜5が望ましく、2〜4.5であることがより望ましい。pHが1を下回ると、\n\n均一な無機物被膜を形成することが困難になる恐れがある一方、pHが5を上回ると、処理液中で成分同士が反応して沈殿物を生じてしまい、置換処理層の表面での化成処理反応が起こらなくなる恐れがある。処理液の温度は、室温〜90℃とすることが望ましい。また、処理時間は3分〜10分とすることが望ましい。なお、処理液には、その安定化を図ることなどを目的として各種の添加剤を添加してもよい。\n\n【0012】\n\nこうして形成される無機物被膜は、Al被膜の表面のZnおよび/またはSnによる置換処理に基づく置換処理層の表面での化成処理反応による反応性被膜であるが、それ自体が水に難溶乃至不溶であり、長期に亘って水分に対して変質が少なく腐食しにくい性質を有する。また、こうして形成される無機物被膜は、Al被膜の表面のZnおよび/またはSnによる置換処理に基づく置換処理層の表面に形成されることで、均質性に優れたものである。従って、この無機物被膜は、これらの特性が相まって、希土類系永久磁石に対して優れた耐食性を付与するものとなる。また、その表面は適度な粗度を有することから、アンカー効果に基づいて優れた接着信頼性を有する。なお、万が一、この無機物被膜に欠陥が生じたとしても、Al被膜の表面をZnおよび/またはSnによる置換処理をしたことで、Al被膜の表面には犠牲防食作用が付加されていることから、希土類系永久磁石の腐食を効果的に防止することができる。\n\n【0013】\n\nこうして形成される無機物被膜の膜厚は、0.1μm〜5μmであることが望ましい。膜厚が0.1μmを下回ると、磁石の表面に形成したAl被膜の耐食性の向上に寄与しなくなる恐れがある一方、膜厚が5μmを上回ると、その形成過程において処理液中の金属イオンの濃度が大きく変動してしまうことで長期に亘る安定した生産が困難になる恐れがある。無機物被膜の膜厚は、処理液の温度やpHの他、処理時間(処理液への浸漬時間)や処理回数(処理液への浸漬回数)により調整することができる。なお、この無機物被膜は、Al被膜の表面のZnおよび/またはSnによる置換処理に基づく置換処理層の表面での化成処理反応により形成されるものであるので、Al被膜の表面のZnおよび/またはSnによる置換処理に基づく置換処理層を形成した希土類系永久磁石を処理液に浸漬することで、置換処理層が溶解してしまい、見かけ上、Al被膜の表面に直接形成される場合と、置換処理層が溶解しきれずに残存することで、Al被膜の表面に置換処理層を介して形成される場合とがある。\n\n【実施例】\n\n【0014】\n\n以下、本発明を実施例によってさらに詳細に説明するが、本発明はこれに限定して解釈されるものではない。なお、以下の実施例は、例えば、米国特許4770723号公報や米国特許4792368号公報に記載されているようにして、公知の鋳造インゴットを粉砕し、微粉砕後に成形、焼結、熱処理、表面加工を行うことによって得られた17Nd-1Pr-75Fe-7B組成(at%)の縦27mm×横15mm×高さ2mm寸法の焼結磁石(以下、磁石体試験片と称する)を用いて行った。\n\n【0015】\n\n実験A:耐食性希土類系永久磁石の製造\n\n工程1:磁石体試験片の表面へのAl被膜の形成\n\n自体公知の表面処理装置(内容積2.2m3)の処理室(真空槽)内に磁石体試験片を収容した後、内部の全圧が1.0×10-1Paになるまで真空排気した。その後、真空槽内にArガスを全圧が1.0MPaとなるように導入し、スパッタリングを行って磁石体試験片の表面を清浄化した。その後、磁石体試験片に電圧1.5kVを印加し、Alワイヤを加熱して溶融し、蒸発させてイオン化し、イオンプレーティング法により、その表面に20分で膜厚が20μmのAl被膜を形成した(N=3の平均値)。\n\n【0016】\n\n工程2:Al被膜の表面の亜鉛置換処理\n\n工程1にて磁石体試験片の表面に形成したAl被膜の表面を、自体公知のピーニング処\n\n理を行って平滑化した後、前処理としてエタノールで脱脂してから、10種類の条件にて表面にAl被膜を形成した磁石体試験片を亜鉛置換処理液に浸漬することで、Al被膜の表面の亜鉛置換処理を行った。用いた亜鉛置換処理液は、酸化亜鉛の濃度が100g/L、塩化第二鉄の濃度が10g/L、ロッシェル塩の濃度が10g/L、水酸化ナトリウムの濃度が525g/Lになるように各成分を水に溶解して調製した(pH11.8、亜鉛置換処理液中のZnイオンとFeイオンの合計濃度は83.7g/L)。得られた結果(サンプル1〜サンプル10)を表1に示す。\n\n【0017】\n\n【表1】\n\n\n\n【0018】\n\n表1から明らかなように、亜鉛置換処理液の温度と処理時間を変更することで、亜鉛置換処理層の層厚を制御できることがわかった。なお、亜鉛置換処理層の層厚は、亜鉛置換処理層の形成前後のサンプルを破断し、EPMA(EPM-810:島津製作所社製,以下同じ)を用いて亜鉛(ZnKα)を検出することで測定した(N=3の平均値)。また、亜鉛置換処理層の形成前後のサンプルを破断し、EPMAを用いて鉄(FeKα)を検出することで、亜鉛置換処理層に鉄が含まれていることが確認できた。\n\n【0019】\n\n工程3:水に難溶乃至不溶の無機物被膜の形成による耐食性希土類系永久磁石の製造\n\n工程2にて得られたサンプル1、サンプル6、サンプル9を、それぞれ3種類の条件にて処理液に浸漬することで、亜鉛置換処理層の表面に水に難溶乃至不溶の無機物被膜を形成した。用いた処理液は、リン酸二水素カルシウムの濃度が0.7g/L、リン酸の濃度が5.0g/L、バナジン酸アンモニウムの濃度が2.0g/Lになるように各成分を水に溶解し、水酸化ナトリウムでpHを3.5に調整して調製した。得られた結果(実施例1〜実施例9)を表2に示す。\n\n【0020】\n\n【表2】\n\n\n\n【0021】\n\n表2から明らかなように、処理液の温度と処理時間を変更することで、無機物被膜の膜厚を制御できることがわかった。なお、無機物被膜の膜厚は、無機物被膜の形成前後のサンプルを破断し、EPMAを用いてカルシウム(CaKα)を検出することで測定した(N=3の平均値)。また、無機物被膜の形成前後のサンプルを破断し、EPMAを用いてバナジウム(VKα)を検出することで、無機物被膜にバナジウムが含まれていることが確認できた。また、薄膜X線回折装置(X’part  pro  MRDシステム:スペクトリス社製)を用いた測定により、無機物被膜にリン酸カルシウムが含まれていることが確認できた。なお、実施例1〜実施例3において製造した耐食性希土類系永久磁石では、工程2で形成した亜鉛置換処理層の層厚が薄いために、無機物被膜を形成した後には亜鉛置換処理層は溶解してほとんど残存しなかったが、実施例4〜実施例9において製造した耐食性希土類系永久磁石では、工程2で形成した亜鉛置換処理層の層厚が厚いために、無機物被膜を形成した後にも亜鉛置換処理層が残存していることが、無機物被膜の形成前後のサンプルを破断し、EPMAを用いて亜鉛(ZnKα)を検出することで確認できた。\n\n【0022】\n\n実験B:製造した耐食性希土類系永久磁石の耐食性の評価\n\n実験Aの実施例1〜実施例9において製造した、表面にAl被膜を形成した後、その表面を亜鉛置換処理をしてから水に難溶乃至不溶の無機物被膜を形成してなる磁石体試験片(耐食性希土類系永久磁石)に対し、JIS  Z  2371に記載の塩水噴霧試験を500時間行うことでその耐食性を評価した。その結果を、実験Aの工程1において得た表面に膜厚が20μmのAl被膜を形成した磁石体試験片(比較例1)と、実験Aの工程2において得たサンプル1、サンプル6、サンプル9の耐食性の評価の結果とともに表3に示す。\n\n【0023】\n\n【表3】\n\n\n\n【0024】\n\n表3から明らかなように、塩水噴霧試験においては、比較例1では、試験開始から24時間経過後に孔食の発生が目立ち始め、早期に全面赤錆発生に至った。サンプル1、サンプル6、サンプル9では、試験開始から24時間経過後に亜鉛の溶出による白錆が発生し、100時間経過後に全面赤錆発生に至った。実施例1〜実施例3において製造した耐食性希土類系永久磁石では、工程2で形成した亜鉛置換処理層の層厚が薄いために、無機物被膜を形成した後には亜鉛置換処理層は溶解してほとんど残存しなかったが、試験開始から100時間経過後にAlの溶解によるものと思われる白錆とともに孔食が発生し、500時間経過後に全面赤錆発生に至ったものの、実用上優れた耐食性を示した。実施例4〜実施例9において製造した耐食性希土類系永久磁石では、一部で亜鉛の溶出による白錆の発生が認められたが、試験開始から500時間経過後も全面赤錆発生には至らず、実用上極めて優れた耐食性を示した。なお、実施例1〜実施例9において製造したいずれの耐食性希土類系永久磁石も、試験終了後に優れた接着信頼性を有していた(エポキシ系接着剤との接着信頼性の評価により確認)。\n\n【0025】\n\n実験C:製造した耐食性希土類系永久磁石の過酷環境下における耐孔食性の評価\n\n実験Aの実施例1〜実施例9において製造した、表面にAl被膜を形成した後、その表面を亜鉛置換処理をしてから水に難溶乃至不溶の無機物被膜を形成してなる磁石体試験片(耐食性希土類系永久磁石)に対し、過飽和高温高圧試験(PCT:Pressure  Cooker  Test)により耐孔食性を評価した。耐孔食性の評価は、プレッシャークッカー試験機(TPC-411:TABAI社製)を用い、温度120℃×相対湿度98%以上×圧力0.2MPaの条件下で12時間放置することで行った。その結果を、実験Aの工程1において得た表面に膜厚が20μmのAl被膜を形成した磁石体試験片(比較例1)と、特開2000-150216号公報に記載の方法に従って、実験Aの工程1において得た表面に膜厚が20μmのAl被膜を形成した磁石体試験片を、日本パーカライジング社製のパルコート3756MAとパルコート3756MBを用いて調製した処理液に浸漬して、Al被膜の表面にジルコニウム含有化成処理被膜を形成した磁石体試験片\n\n(比較例2)と、実験Aの工程1において得た表面に膜厚が20μmのAl被膜を形成した磁石体試験片を、日本ペイント社製のアサルーフ600Nを用いて調製した処理液に浸漬して、Al被膜の表面に六価クロムを含むクロム酸塩被膜を形成した磁石体試験片(比較例3)の耐孔食性の評価の結果とともに表4に示す。\n\n【0026】\n\n【表4】\n\n\n\n【0027】\n\n表4から明らかなように、比較例1〜比較例3では、試験終了後に多数の孔食の発生が認められた。実施例1〜実施例3において製造した耐食性希土類系永久磁石では、試験終了後に工程2で形成した亜鉛置換処理層の層厚が薄いことに起因するものと考えられる少数の孔食の発生が認められたが実用上優れた耐孔食性を示した。実施例4〜実施例9において製造した耐食性希土類系永久磁石では、試験終了後に孔食の発生は認められず、実用上極めて優れた耐孔食性を示した。なお、実施例1〜実施例9において製造したいずれの耐食性希土類系永久磁石も、試験終了後に優れた接着信頼性を有していた(エポキシ系接着剤との接着信頼性の評価により確認)。\n\n【産業上の利用可能性】\n\n【0028】\n\n本発明は、優れた接着信頼性を確保したままAl被膜の孔食の発生を抑制してその耐食性の向上が図られた耐食性希土類系永久磁石およびその製造方法を提供することができる点において産業上の利用可能性を有する。', '【技术领域】\n\n【0001】\n\n耐腐蚀性稀土永磁体及其制造方法技术领域本发明涉及耐腐蚀性稀土永磁体及其制造方法。\n\n发明背景\n\n【0002】\n\n基于稀土的永磁体,例如由ND-Fe-B基永磁体表示的R-Fe-B永磁体,今天在各种领域中使用,因为它们具有高磁性。然而,稀土基永磁体包括在大气中容易氧化腐蚀的稀土元素。因此,当使用时无表面处理时,由于轻微酸,碱或湿度的影响,导致锈蚀,因此,耐磁性可能会劣化和变化,腐蚀从表面进行。它会是劣化和变化。它将是。此外,如果在诸如磁路的装置中的磁体中发生生锈,则锈蚀可以散布到污染的外围部件。因此,考虑到上述点,为了通过真空蒸发,离子镀方法和溅射法等赋予稀土基永磁体的耐腐蚀性,作为表面上的耐腐蚀性涂层。 。它是为了形成。 Al涂层具有优异的耐腐蚀性和质量生产率,并且具有优异的粘合性可靠性,在部件掺入时所需的粘合剂(在粘合剂之前,由于剥离不太可能与粘合剂发生剥离,因此它是广泛的施加到需要具有强粘合强度的稀土永磁体。\n\n顺便说一下,尽管稀土基永磁磁铁的使用面积扩展,但磁铁所需的耐腐蚀性变得越来越多样化。因此,存在诸如Al涂层的缺乏,具有优异的耐腐蚀性,高温和高湿度性能,耐盐性喷涂性能和耐酸性。然而,尽管通过气相生长方法形成的Al涂层通过Al的金属的金属而氧化,但是,如果Al涂层表面上的钝化涂层是钝化涂层,则表面的表面被氧化并用钝化涂层覆盖。从那里损坏腐蚀朝向磁铁(孔食)的表面进行了进展,并且它具有腐蚀到达磁体的表面的性质。另外,通过气相生长形成的Al膜有时会导致缺陷部分,例如由于液滴的扩散(熔融颗粒)而导致诸如薄部分的缺陷部分和诸如薄部分的薄部分。虽然有这样的一种引起这种东西的Al涂层,进一步促进了斑织物的产生。虽然今天技术形成的Al涂层的耐腐蚀性非常好,但这些腐蚀总是可以发生这种腐蚀,因此如果您没有建立解决方案,则可以提高Al涂层的耐腐蚀性。不能。\n\n作为上述问题的解决方案,作为增强和补充Al涂层的耐腐蚀性的方法,例如,通过专利文献1中描述的化学转化处理反应进行Al涂层的表面改性,存在铝 - 铬酸盐处理方法。然而,该方法用于加工含有六价铬或氟离子的溶液,这对于环境和人体是不希望的。\n\n尽管在蚀刻含氟离子的Al涂层表面的同时形成铬酸盐膜,但是处理液中含有的六价铬掺入形成的铬酸盐涂层中。由于存在对环境和人体的不利影响的问题担心,存在废物液体处理复杂的问题。因此,该方法今天不一定是期望的方法。另外,由于铬酸盐膜是通过化学转化处理反应的反应膜在Al涂层的表面上,因此难以实现增厚,并且由于液滴的产生和损失,缺陷部分难以实现,有一个不能充分维护零件是密封和耐腐蚀性的问题。因此,可以对铝 - 铬酸铝处理方法进行优异的溶液,这是优异的溶液。\n\n专利文献1日本专利公开号6-66173\n\n发明的描述\n\n本发明要解决的问题\n\n【0003】\n\n因此,本发明的目的是提供耐腐蚀稀土永磁体和通过抑制Al涂层的蚀的产生而制造耐腐蚀性的方法,同时确保优异的粘合可靠性,并且改善耐腐蚀性。。\n\n[解决问题的手段]\n\n【0004】\n\n作为上述点进行各种研究,本发明人在形成在稀土基永磁体的表面的Al涂层的表面之后,在稀土化的永磁体的表面上进行替代处理,然后是Mg。一种组分。通过形成含有至少一种选自Ca,Ba和Sr的金属磷酸盐的水溶性或不溶性无机薄膜涂层,优异的粘附性而不会对环境和人体产生不利影响,已经发现Al薄膜的蚀刻的产生可以抑制并且可以提高耐腐蚀性。\n\n【0005】\n\n基于上述研究结果制备的本发明的耐腐蚀稀土永磁体如权利要求1所述,烧结磁铁在地面通过气相生长,膜厚度为3μm至25μm形成Al涂层后,表面的表面被Zn和/或Sn代替,然后在含有至少一种选自Mg,Ca,Ba和Sr的金属磷酸盐作为组分的水中。可溶薄膜厚度为0.1μm至5μm(0.1μm除外)其特征在于形成无机薄膜涂层。\n\n3.根据权利要求1所述的耐腐蚀稀土永磁体是根据权利要求1所述的耐腐蚀稀土基永磁体,其中所述无机物质涂层进一步选自Mo,V,W和Ti,以及至少一个金属部件选自Mo,V,W,Ti。它的特征在于包括。\n\n4.根据权利要求3所述的耐腐蚀稀土永磁体是根据权利要求1或2的耐腐蚀稀土永磁体,以及使用Al涂层和无机涂层之间的Al涂层表面的Zn和/或Sn的取代处理。它其特征在于基于替代处理层\n\n根据权利要求4的耐腐蚀稀土永磁体是根据权利要求3(1)Zn和/或Sn和(2)Fe,Ni,Co,Cu的耐腐蚀稀土永磁体,其特征在于它包括在选择至少一个金属组分。\n\n魔鬼根据本发明的耐腐蚀稀土永磁体的制造方法5如前所述,烧结磁铁在地面通过气相生长,膜厚度为3μm至25μm形成Al涂层后,表面的表面被Zn和/或Sn代替,然后在含有至少一种选自Mg,Ca,Ba和Sr的金属磷酸盐作为组分的水中。可溶薄膜厚度为0.1μm至5μm(0.1μm除外)其特征在于形成无机薄膜涂层。\n\n还,6描述的制造方法是5在所描述的制造方法中,其特征在于,无机膜涂层还包含至少一种选自Mo,V,W,Ti作为组分的金属组分。\n\n还,7描述的制造方法是5要么6在描述的制造方法中,al\n\n其特征在于,基于Zn和/或Sn的取代处理,膜的表面形成具有0.05μm至5μm的层厚度为0.05μm至5μm的替代处理层,然后在表面上形成无机膜涂层。\n\n还,8描述的制造方法是7在所描述的制造方法中,替代处理层包含选自Zn和/或Sn和(2)Fe,Ni,Co和Cu的至少一种金属组分。\n\n【发明效果】\n\n【0006】\n\n根据本发明,可以提供耐腐蚀的稀土永磁体和通过抑制Al涂层的蚀的产生以及提高耐腐蚀性而制造耐腐蚀性的方法,同时确保优异的粘附可靠性。\n\n实施本发明的最佳方式\n\n【0007】\n\n在制造本发明的耐腐蚀稀土永磁体的方法中,可以以任何方式进行磁体表面上的Al涂层的形成,但是稀土永磁体和Al涂层易于腐蚀并腐蚀。鉴于具有,希望通过气相沉积进行。气相生长方法的实例包括真空蒸发,离子电镀方法,溅射方法等。希望采用电镀方法。 Al涂层的形成条件可以根据待采用的方法中的一般条件。不用说,在形成Al涂层之前,可以对磁体的表面进行已知的清洁处理,例如洗涤,脱脂和溅射。 Al涂层的膜厚度优选为3μm至25μm,更理想为5μm至20μm。当薄膜厚度低于3μm时,Al膜在随后的替换处理中溶解在待进行上述Al涂层的Al涂层表面的后续替代处理中,使Al涂层的耐腐蚀性不能是改善。另一方面,如果膜厚度超过25μm,则通过花费长时间形成Al涂层,它可以不如生产率,并且存在磁体的有效体积可能困难的风险。。 Al涂层可以是Cu或Mg的合金涂层,其主要由Al组成。另外,混合金属可以包含为杂质。\n\n【0008】\n\n通过Al涂层表面的Zn和/或Sn的取代处理可以是已知的锌取代处理,锡取代的处理,锡,锌取代处理等。用于通过Zn和/或Sn取代处理的处理液的实例包括Zn离子和/或Sn离子,并通过用碱如氢氧化钠将pH调节至11-14获得的那些。处理液可包括至少一种选自Fe离子,Ni离子,Co离子和Cu离子的金属离子,以改善Al涂层的覆盖率。制备这种处理溶液,例如,氢氧化钠水溶液,氧化锌和/或氧化锡,进一步,氯化铁,硫酸镍,硫酸钴,硫酸钴,硫酸钴和至少一种选自硫酸铜的金属盐通过溶解来完成(这种加工液是可商购的:例如,由Uemura Industry Co.,Ltd。制造的商品名AZ301和AZ401)。处理溶液中这些金属离子的浓度优选为1g / l至150g / l,因为总金属离子浓度均匀地引起Al涂层表面的取代反应,5g / L至100g /更可取的。此外,可以将各种添加剂加入到处理液中以稳定其稳定性。\n\n【0009】\n\n用Al涂层表面的Zn和/或Sn的取代处理是,例如(1)Zn离子和/或Sn离子和(2)Fe离子,Ni离子,Co离子,从Cu离子中选择的Cu离子它可以通过浸入稀土永磁体来进行,其中在磁体的表面上形成Al涂层浸入含有磁体的金属离子的加工液中。通过这样做,剥离形成在Al涂层表面上的钝化涂层,用新暴露的活性表面替换金属离子,(1)Zn和/或Sn和(2)Fe,Ni,Co ,形成含有选自Cu的至少一种金属组分的替代处理层。此时,处理液的温度\n\n希望在室温至50℃的程度。当处理液的温度低于室温时,可能难以均匀地导致Al涂层表面上的取代反应,而处理液的温度超过50℃,则取代反应在自由基中发生替代反应。可能难以形成均匀的替代处理层。而且,希望处理时间为5秒至300秒。当处理时间小于5秒时,可以不充分形成替换处理层,而治疗时间超过300秒,则Al涂层的溶解,并且在某些情况下,磁体的表面暴露。腐蚀磁铁可能发生或可能变得难以形成均匀的替代处理层。由于以这种方式形成的位移处理层可以进一步沉淀构成替换处理层的组分,因此可以沉淀取代处理层,从而可以从铬酸盐涂层不同地实现厚度。如果由于存在缺陷部分在Al涂层中产生液滴和下降,对该部分的密封效果是优异的。不言而喻,可以在Al涂层的表面和/或Al涂层的表面上进行Al涂层的表面。此外,使用乙醇如乙醇如乙醇,脱脂的Al涂层的表面脱脂,然后用碱性溶液,进一步含有含有磷酸钠,碳酸钠和表面活性剂的碱性溶液,磷酸钠和碳酸钠和碳酸钠,用碱性蚀刻含有溶液,它可以浸入硝酸水溶液或硫酸水溶液中以除去Smack。另外,在用硝酸轻微蚀刻形成的替代处理层的表面之后,可以再次形成替代处理层,由此可以通过Al涂层的表面形成均匀的取代处理层。\n\n【0010】\n\n因此,形成的替代处理层的层厚度理想地是0.05μm至5μm。当层厚度低于0.05μm时,至少1选自Mg,Ca,Ba,Sr,作为在下一步中稀土永磁体的表面上形成的Al涂层表面具有优异粘合性的组分,如果难以形成含有物质金属磷酸盐的水溶性或不溶性无机物质涂层,则从Mg,Ca,Ba,Sr中选择至少1,如果水溶性或不溶性无机物质涂层难以形成含有物种的金属磷酸盐的差,或者在Al涂层中存在小针孔,则针孔通过不可能覆盖替代处理层,难以提高Al涂层的耐腐蚀性,而当层厚度超过5μm时,替代处理层的强度降低,并且替换加工层充分可能无法发挥作用。替代处理层的层厚度可以通过处理液的温度和pH调节,并且可以通过处理时间(浸入处理液)或治疗次数(次数)来调节浸入处理液中)。\n\n【0011】\n\n水溶性或不溶于水,包括至少一种选自Mg,Ca,Ba和Sr的金属磷酸盐,其在通过Zn和/或Sn代替Al涂层的表面之后进行。形成无机膜涂层例如(1)(1)至少一种金属硝酸盐,硫酸盐和硫酸盐,和(2)磷酸,磷酸,次磷酸,焦磷酸盐,选自(1)中选自焦磷酸,基于替代处理的替代处理层通过浸入稀土基永磁体可以通过浸入稀土基永磁体来用SN涂层和/或取代处理在水中选择的至少一种选自这些盐(如钠盐或钾盐)的替代处理。由此形成的无机膜涂层还可含有至少一种选自Mo,V,W和Ti的金属组分作为组分。这种金属组分有助于无机涂层的厚度和防止裂纹产生。 (1)从选自Mg,Ca,Ba和Sr(2)Mo,V,W,Ti的至少一种选自Mg,V,W,Ti的金属的至少一种金属组分的可溶解溶液是可差的至少一种金属组分,因此是不溶性无机涂层的形成是,例如(1)Mg,Ca,Ba和Sr 1金属硝酸盐和硫酸盐等(2)磷酸,磷酸,次磷酸,至少一种选自至少一个和(3)的金属酸盐钼酸盐,钒酸盐,钨酸盐,钛酸盐,至少一种和(3)钼酸盐,钒酸盐,钨酸盐,选自焦磷酸盐,盐(如钠盐和钾盐)一排由Zn和/或形成的稀土永磁体通过Al涂层的表面和/或基于Al涂层的替代处理的替代处理层的SN取代处理,以浸入位移处理层。处理液的pH优选为1至5,理想地是2至4.5。当pH下降到1以下时,\n\n虽然难以形成均匀的无机膜,但是如果pH超过5,则组分在处理液中彼此反应以引起沉淀物,以及在取代的处理层表面上的化学转化处理。反应可能不会发生。理想的是,处理液的温度在室温至90℃。另外,希望处理时间为3分钟至10分钟。此外,可以将各种添加剂加入到处理液中以稳定其稳定性。\n\n【0012】\n\n以这种方式形成的无机涂层是基于替代处理层的Al涂层表面的表面和/或替代处理层的表面的化学转化处理反应在替换处理层的表面上的反应膜。但本身可溶于水分差,并且具有很长一段时间不太可能被水腐蚀的财产。此外,由此形成的无机膜通过基于替代处理层的表面基于替代处理和通过Sn的取代处理的取代处理而在替代处理层的表面上形成优异。因此,无机薄膜涂层具有根据稀土基永磁体具有这些特性,以赋予优异的耐腐蚀性。此外,由于表面具有适当的粗糙度,因此基于锚固效果具有优异的粘合性可靠性。另外,即使在无机物质中发生缺陷,也可以被Zn和/或Sn取代的Al涂层的表面,从而将牺牲防腐作用加入到Al涂层的表面中。稀土基础腐蚀可以有效地防止永久磁铁。\n\n【0013】\n\n因此,形成的无机涂层的膜厚度理想地是0.1μm至5μm。当薄膜厚度低于0.1μm时,它可能没有有助于改善在磁体的表面上形成的Al涂层的耐腐蚀性,而膜厚度的厚度超过5μm,则金属离子的浓度形成过程中的处理溶液。由于波动大大,长期稳定的生产可能困难。可以通过处理液的温度和pH调节无机膜涂层的膜厚度,并且可以通过处理时间(浸入处理液)和治疗次数(次数)来调节浸入处理液中)。由于基于通过Sn,Zn和/ / /或基于SN,Zn和/ / /或基于所述替代处理层的所述替代处理层的表面,所述无机薄膜涂层由所述替代处理层的表面的化学转化处理反应形成。或者通过基于Sn的替代处理浸入具有替代处理层的稀土永磁体,替换处理层溶解,并且在Al涂层和取代的表面上直接形成的情况。当治疗层时不能溶解,可以通过替换处理层在Al涂层的表面上形成。\n\n【例子】\n\n【0014】\n\n在下文中,将通过实施例更详细地描述本发明,但是本发明不旨在解释。在以下实施例中,如美国专利No.4,522,587中所述,在微粒后,已知的铸造锭被压碎,烧结,热处理,表面处理,表面处理。美国专利No.4,770,723和美国专利No.4,792,368。烧结磁体(以下简称磁型试验片17mm比的17毫米 -  1PR-75FE-7B组合物(以%)(下文中称为磁型试验片)的高度2mm尺寸。\n\n【0015】\n\n实验A:生产耐腐蚀稀土系统永磁体\n\n步骤1:磁铁样本表面上的Al涂层的形成\n\n本身已知的表面处理装置(内部体积2.2M3容纳在处理室(真空室)的磁体样品)后,内部总压力为1.0×10-1真空疏散Pa。此后,将Ar气体引入1.0MPa的真空罐中,并进行溅射以清洁磁体样品的表面。此后,将1.5kV的电压施加到磁体试验片上,并且将Al线加热,熔化,蒸发电​​离,并且通过离子在表面上形成具有20μm的膜厚度的Al膜电镀。(平均值为n = 3)。\n\n【0016】\n\n步骤2:锌取代Al涂层表面的替代处理\n\n在步骤1中形成在磁体样本的表面上形成的Al涂层的表面,本身已知的输给工艺。\n\n在进行原因后,在用乙醇作为预处理脱脂后,将Al涂层在表面上形成具有10种类型的条件的磁体样本浸入锌取代处理溶液中,然后Al涂层是锌取代处理表面进行。所用锌取代处理溶液使得氧化锌的浓度为100克/升,氯化铁的浓度为10g / L,10g / L的Rochelle盐,氢氧化钠浓度为525克/升。通过将其溶解在水中(Zn离子的总浓度和在pH 11.8中的Fe离子和锌取代处理中的总浓度为83.7g / L)制备各组分。得到的结果(样品1至样品10)如表1所示。\n\n【0017】\n\n【表格1】\n\n\n\n【0018】\n\n从表1中可以看出,发现锌取代处理层的层厚度可以通过改变锌代替处理液的温度和加工时间来控制。锌取代处理层的层厚度在形成锌位移层之前和之后破坏样品,并使用EPMA(EPM-810:Shimadzu Corporation,相同)检测锌(ZnKα)。测量(N =的平均值3)。此外,证实通过在形成锌取代处理层之前和之后,通过破坏样品,锌取代的处理层含有锌取代的处理层。\n\n【0019】\n\n第3步:通过在水中形成易溶性或不溶性无机涂层生产耐腐蚀性稀土的永磁体\n\n通过将样品1,样品6和在步骤2中获得的样品9浸入三种类型的条件下,在锌取代的处理层的表面上形成水溶性无机涂层。用处理的处理溶液溶解水中的各组分,使得磷酸氢磷酸钙浓度为0.7g / L,5.0g / L的磷酸为5.0g / L,钒酸铵的浓度为2.0g / l。用氢氧化钠将pH调节至3.5并制备。所得结果(实施例1至9)示于表2中。\n\n【0020】\n\n[表2]\n\n\n\n【0021】\n\n从表2中明显看出,可以通过改变加工液的温度和加工时间来控制无机膜涂层的膜厚度。通过在形成无机涂层之前和之后破碎样品并使用EPMA(N = 3的平均值)检测钙(CaKα)来测量无机涂层的膜厚度。此外,证实通过在形成无机膜涂层之前和之后使用EPMA检测钒(VKα),无机薄膜涂层含有钒。另外,已经证实,无机涂层通过使用薄膜X射线衍射仪(X\'Part Pro MRD系统:通过光谱制造)的测量含有磷酸钙。在实施例1至3中制造的耐腐蚀性稀土永磁体中,由于在步骤2中形成的锌位移层的层厚度薄,在形成无机薄膜之后溶解锌取代的处理层。虽然几乎没有残留物,在实施例4--实施例9中制造的耐腐蚀性稀土永磁体中,在步骤2中形成的锌取代处理层的层厚度是厚的之后,通过在前和之前通过破坏样品来确认形成无机膜涂层后的锌。在形成替代处理层的无机涂层之后,使用EPMA检测锌(ZnKα)。\n\n【0022】\n\n实验B:耐腐蚀稀土耐腐蚀性耐腐蚀性制造的评价\n\n实验A的实施例1至9.在表面上形成Al涂层后,然后进行锌置换处理,然后形成可溶于或不溶于水的无机物质涂层。评估JIS Z 2371中描述的盐喷雾试验一件(耐腐蚀性稀土基永磁体)500小时500小时500小时。结果是磁体样品(比较例1)和样品1,样品6,在实验A的步骤2中获得的样品和实验A的步骤2,具有膜厚度为20μm的膜厚度为20μm在实验A的步骤1中获得的表面。表3显示在表3中,作为评估9耐腐蚀性。\n\n【0023】\n\n[表3]\n\n\n\n【0024】\n\n从表3中明显,在比较例1中,在比较例1中,在试验开始后24小时后开始的蚀使有利的发生,并且整个表面红色生锈早期发生。在样品1中,样品6和样品9,在研究开始后24小时后产生锌的白色锈,并在100小时后,发生整个表面衰减。实施例1-耐腐蚀性稀土的基于基于基于地球的永磁体在实施例3中制造,因为在步骤2中形成的锌取代处理层的层厚度是薄的,锌取代的处理层溶解,然后在形成无机薄膜涂层之后几乎在形成无机薄膜涂层之后。虽然没有剩余的,但是用白色生锈产生了斑点,似乎是由于从研究开始时的溶解,并且产生了蚀,并且整个表面红色生锈发生在500小时后,但它显示出优异的耐腐蚀性实际使用。实施例4在实施例9中制造的耐腐蚀性稀土基永磁体中,观察到由于锌的洗脱而导致的白色锈的发生,但在试验开始后500小时后,不可能产生整个表面显示出剧烈且优异的耐腐蚀性。另外,在测试完成后,实施例1中制造的任何耐腐蚀稀土永磁体也具有优异的粘附可靠性(通过评估与环氧基粘合剂的粘附可靠性进行评估)。\n\n【0025】\n\n实验C:耐腐蚀稀土永磁体严重环境下的蚀性耐蚀性评价\n\n实验A的实施例1至9.在表面上形成Al涂层后,然后进行锌置换处理,然后形成易溶或不溶于水的无机物质涂层。通过过饱和的高温评价蚀性抗性。关于该件(耐腐蚀稀土永磁体)的高压试验(PCT)。使用压力锅测试仪(由TPC-411:Tabai Co.,Ltd。制造)进行蚀性电阻的评估。在温度为120℃的条件下左侧×0×0.2的温度为98%或更多×0.2 MPA 12小时。结果是磁体型试验片(比较例1),其中在实验A步骤1的步骤1中获得的表面上形成具有20μm的膜厚度的Al涂层,以及JP-A-2000-150216中描述的方法并且实验A在将20μm的步骤1的步骤1的表面上形成具有20μm的膜厚度为20μm的Al涂层的磁铁样本浸入使用由Nippon Parkarizing的脉动3756mA制备的脉动3756mA制备的处理溶液中3756 MB和Al涂层的表面。磁体试验片形成含锆的化学处理涂层\n\n(比较例2),在实验A的步骤1中获得的表面上形成具有20μm的膜厚度为20μm的Al涂层的磁体样本浸入使用由Nippon Paint制造的Asserus 600N制备的处理溶液中。表4作为评价磁体型试验片(比较例3)的蚀性电阻,其中在Al涂层的表面上形成含有六价铬的铬酸盐膜。\n\n【0026】\n\n表4.\n\n\n\n【0027】\n\n从表4中明显看出,在比较例1至比较例3中,在测试完成后观察到大量的点蚀发生。实施例1-耐腐蚀性稀土的基于地球基永磁体在实施例3中制造的少量凹陷的开发,其被认为是由于在测试后在步骤2中形成的锌位移处理层的薄层厚度。但显示实际使用的优异耐咬合抵抗力。实施例4在实施例9中制造的耐腐蚀稀土永磁体中,未经认识到测试后未观察到点蚀食物的发生,并且它表现出实际上优异的耐咬合性。另外,在测试完成后,实施例1中制造的任何耐腐蚀稀土永磁体也具有优异的粘附可靠性(通过评估与环氧基粘合剂的粘附可靠性进行评估)。\n\n【工业可用性】\n\n【0028】\n\n本发明具有耐腐蚀的稀土永磁体,其中抑制了Al涂层的蚀的产生,并且可以提供优异的粘合性可靠性,并且可以提供耐腐蚀性。具有上述可用性。');
INSERT INTO `os_patent_instruction_text` VALUES (13031, 22860, '【技術分野】\n\n【0001】\n\n本発明は、高性能の希土類磁石の製造方法及びその製造装置に関する。\n\n【背景技術】\n\n【0002】\n\n希土類·鉄·ホウ素系焼結磁石(以下「RFeB磁石」という)は、それまでの永久磁石材料の特性をはるかに凌駕するばかりでなく、ネオジム(希土類元素の一種)、鉄及びボロンなど資源的に豊富な原料を用いるため廉価であり、1982年に出現して以来理想的な永久磁石材料として着実に市場を拡大しつつある。主な用途はコンピューターHDD(ハード·ディスク·ドライブ)磁気ヘッド駆動用モーターVCM(ボイスコイルモーター)、高級スピーカー、ヘッドホン、電動補助型自転車、ゴルフカート、永久磁石式磁気共鳴診断装置(MRI)などである。さらに、ハイブリッド·カー(電気自動車)駆動用モーターや省エネルギー·低騒音型大型家電製品(クーラーや冷蔵庫)、産業用モーターにおいても実用化が進められている。\n\n【0003】\n\nRFeB磁石は高い磁気特性を有するが、温度特性が悪いという欠点を有する。特に保磁力の温度特性は重要である。RFeB磁石は出現以来広く用いられるようになったが、最も用いられている分野はコンピューターHDD用VCM及びMRIであった。これらはいずれも安定した室温で用いられる。\n\n【0004】\n\n家電や産業用モーターに使用される場合、コイル電流に起因する温度上昇を避けることはできない。また、モーター電機子から逆磁界が作用するため、温度が上昇して保磁力が小さくなると永久磁石に不可逆減磁が生じる。不可逆減磁を防ぐためには予め保磁力を高くしておくしかない。\n\n【0005】\n\nRFeB磁石は1982年に本願発明者らによって見出された(特許文献1)。このRFeB磁石は、正方晶の結晶構造の、磁気異方性を有するR2Fe14B金属間化合物を主相とする。高い磁気特性を得るためには磁気異方性の特徴を生かすことが必要であり、焼結法以外にも鋳造·熱間加工·時効処理の方法(特許第2,561,704号)や急冷合金をダイ·アップセット加工する方法(特許第4,792,367号)が提案されている。しかしこれらの方法は、磁気特性および生産性の両面において焼結法に劣る。焼結法は、永久磁石に必要とされる緻密で均質な微細組織を得るための最良の方法である。\n\n【0006】\n\n[焼結工程]\n\nRFeB焼結磁石は、組成配合·溶解·鋳造·粉砕·磁界中圧縮成型·焼結·熱処理の工程を経て製造される。\n\n【0007】\n\n[組成]\n\nRFeB磁石が見出された後、その保磁力など特性改善のため、添加元素(特許第1606420号等)·熱処理(特許第1818977号等)·結晶粒径コントロール(特許第1662257号等)などの効果が明らかにされてきたが、保磁力の向上に最も効果的なのは、重希土類元素(Dy, Tb)の添加である(特許第1802487号)。重希土類元素を多量に用いれば保磁力は確実に増加するが、飽和磁化が低下して最大エネルギー積が低下する。また、Dy, Tbは資源に限りがあり、高価であるため、将来に需要が見込まれる電気自動車や産業用·家庭用モーターをまかなうことは不可能である。\n\n【0008】\n\n[溶解]\n\n焼結磁石には緻密で均質な微細組織が要求される。当初は合金溶湯を鋳造し、微粉砕する方法が一般的であった(例えば特許第1431617号)。合金溶湯をストリップキャスト法で急冷すればアルファ鉄の出現が抑えられて、非磁性の希土類元素の量を少なくすることで高いエネルギー積が得られる(特許第2665590号、特開2002-208509等)。\n\n【0009】\n\n[還元拡散法]\n\n希土類酸化物粉末と鉄粉、フェロボロン粉末等を金属Caと混合加熱して、RFeB合金粉末\n\nを直接に得る方法がある。\n\n【0010】\n\n[粉砕]\n\nRFeB合金は水素を吸蔵させると合金内にマイクロクラックが生じ、粉砕が容易になる(特許第1674022号)。微粉砕には、シャープな粒度分布の粉末が得られることから、窒素などの不活性ガスを利用するジェットミル粉砕が主流である(特許第1883860号等)。\n\n【0011】\n\n[成形]\n\n磁界中で粉末を圧縮成形して磁気異方性焼結磁石を得る製造方法は、フェライト磁石の発明に端を発し(特公昭29-885号, 米国特許第2,762,778号)、その後RCo磁石やRFeB磁石に応用された(米国特許第3,684,593号等、特許第1431617号)。\n\n微粉末はRFeB正方晶結晶構造のc軸を一方向に揃えて成形される。金型プレス法が一般的であるが、さらに高い配向度と高いエネルギー積を得る方法としてCIP法(特許第3383448号)やRIP法(特許第2030923号等)がある。\n\n【0012】\n\n[金型プレス法]\n\n磁気異方性永久磁石の製法に磁界中圧縮成型·焼結の手法が用いられたのは、ウェント等によって1951年にフェライト磁石が発明(特公昭35-8281号, 米国特許第2,762,777号)された同じ年に、ゴルター等によって磁気異方性焼結フェライト磁石が発明された(特公昭29-885号, 米国特許2,762,778号)。その後、金型プレス法における欠点を克服するために数多くの改良がなされてきた。\n\n【0013】\n\n[潤滑剤の添加]\n\n金型成型時の微粉末の配向を高めるため、粉末と粉末、粉末と金型の摩擦を軽減するために潤滑剤を添加する方法がある(特許第2545603号、第3459477号等)。\n\n【0014】\n\n[湿式磁場プレス]\n\n微粉末の酸化を防ぎながら高い配向性を達成するために鉱物油、合成油又は植物油と微粉末の混錬物を金型内に高圧注入し、磁界中で湿式圧縮成型する方法がある(特許第2731337号等)。この場合、スラリーを加圧注入、加圧充填を行うと高い焼結密度と高い磁気特性が得られるという報告がある(特許第2859517号)\n\n【0015】\n\n[CIP]\n\n金型成型法では一方向からの加圧しか採用できず、それが配向を乱す原因である。あらゆる方向から等方的に圧力を加えることができれば、配向の乱れが小さくなる。微粉末をゴム容器に入れて外部から磁界をかけ、冷間静水圧プレス(CIP)を施す方法(特許第3383448号等)がある。\n\n【0016】\n\n[RIP]\n\n冷間静水圧プレスと同等の効果を得る方法として、本発明者らは先に金型プレス機内にゴム型を設置して等方的圧力を加える方法としてRIP(Rubber Isostatic Pressing)法を提案した(特許第2030923号)。この方法では自動化が容易なため、CIPよりもはるかに量産に向いている。\n\n【0017】\n\n[MIM]\n\n多量のバインダーと微粉末を混練して温度を上げ粘性を低くしたものを金型内に射出成形する方法が提案されている(特許第3078633号)。\n\n【0018】\n\n[AT]\n\n凝集性のある微粉末を金型プレス等のダイ·キャビティに充填する方法として空気タッ\n\nピング(エア·タッピング、Air Tapping、AT)法が提案された(特開平9-78103号、特開平9-169301号、特開平9-225693号)。空気タッピングとは、粉末の供給ホッパーからキャビティに向かって高速の空気気流が流れ、戻るときはそれよりも低速であることを特徴とする。空気タッピング法を用いて、予めバインダーを混合した粉末をキャビティ内に充填し、加熱等の手段を用いて固化し、ニアネットシェイプの成形体を得る方法が提案されている(特開2000-96104)。\n\n【0019】\n\n[パルス磁界]\n\n粉末の方向を揃えるために外部から磁界を加える方法が採用される。RFeB磁石の場合、正方晶構造のc軸方向が容易磁化軸に相当し、磁界を加えると粉末は一方向に配向する。通常の金型プレスの場合は電磁石による静磁界が加えられ、最大15 kOeの程度である。しかし空心コイルを用いたパルス磁界では15〜55 kOeの強い磁界をかけることができて、実際に高い磁界を加えた方が磁気特性は向上する(特許第3307418号)。\n\n【0020】\n\n[クローズドシステム]\n\n粉末が酸化するのを避けるために粉砕工程、成形工程を不活性雰囲気下で行うことが提案されている(特開平6-108104)。\n\n【0021】\n\n【特許文献1】特許第1431617号\n\n【発明の開示】\n\n【発明が解決しようとする課題】\n\n【0022】\n\n[焼結法の効果]\n\n粉末冶金(焼結)法では、緻密で均質な微細組織が得られる。希土類コバルト磁石やR-Fe-B磁石において、それぞれの材質の特質を生かし、高性能の永久磁石を得るには粉末冶金法にまさる方法はない。\n\n【0023】\n\n[磁界中プレス成形]\n\n磁気異方性焼結磁石の製造方法に磁界中圧縮成形·焼結の手法が用いられたのは、1951年にウェント等によってフェライト磁石が発明(特公昭35-8281号, 米国特許2,762,777号)された直後に、ゴルター等によって磁気異方性焼結フェライト磁石が出現したのが最初である(特公昭29-885号, 米国特許2,762,778号)。圧縮成形する目的は、圧縮によって液体状のバインダー成分を搾り出すこと、配向した粒子を固定するためであるとされている。また、圧縮成形は所望の形状を得るために好ましいとされている。圧縮成形しないでそのまま磁界中で容器と共に加熱した例があるが、圧縮成形した例に比べて、密度が低く、磁気特性も低い。\n\nその後磁界中圧縮成形·焼結の手法はRCo焼結磁石(米国特許第3,684,593等)及びRFeB焼結磁石(特許第1431617号)に引き継がれた。磁界を加えることは粒子を配向するために必須の工程であるが、圧縮の効果については特に深い考察は行われて来なかった。\n\n金型プレスでは直角磁場方式と平行磁場方式がある。x-, y-, z-三軸で考える。平行磁場方式ではz-軸方向に磁場が加えられ、同時にz-軸方向に加圧される。磁場によってz-軸方向に配列された微粒子は、同じくz-軸方向から加圧されて、摩擦によってx-軸方向、y-軸方向に傾き、配列が乱れる。一方、直角磁場方式では、x-軸方向に磁場がかけられて配列し、z-軸方向から加圧される。同じく摩擦によってx-軸方向、y-軸方向に傾くが、y-軸方向に傾く場合、粉は回転するだけで、配列そのものに影響は小さい。すなわち、理想的な配列に対して、平行磁場方式では二方向に配列が乱れるが、直角磁場方式では一方向にしか配列が乱れず、直角磁場方式の方が特性は高い。\n\n【0024】\n\n[金型プレスが選択される理由]\n\n金型プレスが用いられる理由のひとつは、ほとんど最終形状·寸法に近いもの(ネット\n\nシェイプ)が得られ、歩留まりがよく自動化が可能だからである。特にネットシェイプと歩留まりの観点からは金型プレス法は量産に適した方法として、広く採用されてきた。\n\n【0025】\n\n[CIP]\n\n予め微粉末をゴム容器に入れて密封し、外部から磁界をかけた後、CIP(Cold Isostatic Pressing:冷間静水圧プレス)を施す方法がある(特許第3383448号等)。金型プレスのような粒子の配向を乱す一方向からの加圧ではなく、等方的に圧力が加えられるため、配向の乱れは少ない。パルス磁界による高い磁界を加えて粉末を配向することができる。高い圧力を加えることができて、堅牢な圧粉体を得ることができる。しかし、ハンドリングのための消磁工程は必要である。所望形状の圧粉体を得ることがでないために歩留まりが悪く、加工工程に手間がかかる。また、手作業が避けられないため、量産に向かない。\n\n【0026】\n\n[RIP]\n\nCIPと同等の効果を得る方法として、本願発明者らは先にRIP(Rubber Isostatic Pressing)法を提案した(特許第2030923号等)。RIPでは、微粉末をゴム型に入れて、パルス磁界をかけ、ゴム型全体を金型プレス機で加圧する。CIP方式と同じく等方的に圧力が加えられ、かつパルス磁界を用いることができるので、金型プレス方式よりも特性は高い。この方法ではゴム型充填·パルス磁界印加·圧縮成形·消磁の工程を連続して行う自動化が可能なため、量産に向いている。\n\nフローティング·ダイ方式であるため、金型プレス機のような精密なダイセットを必要としないこと、電磁石のためのコイルや磁気回路を必要としないことから、RIP装置の容積は同レベルの金型プレス機の数分の1で済む。小型であるため、グローブボックス形式の雰囲気密閉化が可能である。大きな圧力を加えることができるため、バインダーを用いなくても堅牢な圧粉体を得ることができる。\n\nしかし、この磁石の微粉末は金属間化合物合金塊を粉砕したもので、均一な球形粉ではなく、さまざまな形状の破面を有しており、CIPにせよRIPにせよ、大きな力が加わる場合に粉同士の摩擦による配向の乱れを除去するのは困難であった。また、ゴム型を使用するため圧粉体取り出しの工程に手間がかかり、焼結炉搬送までの工程の自動化が困難であった。\n\n【0027】\n\n[MIM]\n\nMIM(Metal Injection Molding:金属射出成形)は、合金粉末と多量のバインダー(体積比で40〜50%)からなる混練物の温度を高めて粘性を低くしたものを、金型内に射出成形して成形体を得、炉に入れて徐々に温度を上げながら脱バインダー処理を行うものである。磁気異方性磁石の場合には、予め金型の外から静磁界が加える。バインダーとしてパラフィン系ワックスを用いる方法(特開昭64-28302)、寒天やメチルセルロースを用いる方法(特許第3078633号等)が知られている。ネットシェイプ性は実現されているが、報告されている磁気特性はかなり低い。バインダーが蒸発し、かつバインダー成分と希土類元素が反応しないような低温域で、長時間の脱バインダー処理工程を必要とするため、時間がかかり、生産効率が非常に悪い。\n\nMIM法では高圧注入による充填方式であり、圧縮工程はない。多量のバインダーを用いるため、残留炭素等の影響で特性が低下する。ネットシェイプの観点からはすぐれているが、磁気特性は低い。\n\n【0028】\n\n[磁界中プレス工程の詳細]\n\n長い歴史の中で、金型プレス法は効率的な作業のために自動化が図られてきた。その工程はおおよそ次の通りである。\n\n·微粉末がフィーダーを通して金型内に供給される。\n\n·上パンチを下ろしてキャビティを封じる。\n\n·磁界が加えられる。\n\n·磁界を加えながら上パンチと下パンチで加圧する。\n\n·逆磁界または交番磁界をかけて圧粉体を消磁する。\n\n·上パンチが上がる。\n\n·下パンチが上がり(またはダイスが下がり)、圧粉体が金型上に押し出される。\n\n·ロボット·アームが圧粉体をコンベアに運ぶ。\n\n·圧粉体が一箇所に集められる。\n\n·焼結台版上に並べられる。\n\nこの際、衝突や溶着を避けるために間隔をおいて配置される。作業状況により圧粉体が数日間保管されることがある。\n\n粉末冶金法で用いられる金型プレスは精密機械である。単個(一個)取りのプレスであればパンチ·ダイスの位置合わせは比較的容易であるが、多数個取りの場合は複雑である。磁石は円板·矩形·穴あき円板·弓形などさまざまな形状·寸法が要求され、その度に煩雑な金型取替え作業が必要となる。\n\n【0029】\n\n[磁界中圧縮成形の目的と効果]\n\n圧縮成形の役割について、例えば\"Rare-earth Iron Permanent Magnet\" edited J.M.D.Coey, CLARENDON PRESS, OXFORD, 1996, pp340-341には「The pressing load is sufficient to make compacts having enough strength to be handled but without significant misorientation of the crystallites.(加圧力は粒子の配列に重要な乱れを起こすことなくハンドリングのための充分な強度をもった圧粉体を作るのに充分な程度である)」と記載されている。\n\nまたJ.Ormerod \"Powder Metallurgy of rare earth permanent magnets\" Powder Metallurgy 1989, Vol.32, No.4, p247では「The pressing pressure should be sufficient to give the powder compact enough mechanical strength to withstand handling, but not high enough to cause particle misorientation.(加圧力は圧粉体にハンドリングに耐える充分な機械的強度を与える程度であるが、粒子の配向の乱れを起こすほど高くない程度でなければならない)」と記載がある。\n\nいずれの文献においても、大きな圧力で加圧すれば配向が乱れることを認識しながら、ハンドリングのために圧粉体に充分な強度を持たせるために強く圧縮することが必要であると認識されている。\n\n【0030】\n\n[希土類磁石に固有の問題]\n\n希土類磁石は、化学的に活性で酸化し易い希土類元素を約30重量パーセント含む。希土類焼結磁石製造工程では、化学的に活性な希土類元素を大量に含み、平均粒度が3ミクロンくらいの微粉末を取り扱う工程が存在する。\n\nこの微粉末のひとつひとつを磁界中で一定方向に配向する必要があるため、一般粉末冶金学で用いられるような、予め造粒して粉末の流動性を改善する手段を用いることができない。微粉末は嵩が大きく、また粉末ひとつひとつが磁石の性質を有しているため、金型キャビティ内に粉末を供給してもブリッジを形成し、均等充填がむずかしい。\n\n【0031】\n\n[配向を上げるために]\n\n金型成形時の微粉末の配向を高めるため、潤滑剤を添加する方法が提案されている(特許第3459477号、特開平8-167515等)。潤滑剤は、微粉末の摩擦を小さくする効果があり、磁界をかけながら圧縮するときの配向度を向上する。しかし、充分な潤滑効果を得る目的で多量の潤滑剤を加えると、脱脂のために長時間必要とする。\n\nある種の液体潤滑剤(例えば特開2000-306753号)は揮発性にすぐれていて、焼結体中にほとんど残存しないとされる。しかし配向性を向上させる目的で潤滑剤を多量に添加すると、金型プレス後の圧粉体強度が弱くなり、ハンドリングの問題を生じる。\n\n金型プレス機では電磁石によって静磁界が加えられる。電磁石による静磁界は、鉄心による磁束の飽和があるため、せいぜい10〜15Oe(1〜1.5T)程度に留まる。磁界をかけたま\n\nま加圧していくと、粉同士の摩擦力のほうが大きくなって、粉が回転し、配向が乱れる。\n\nパルス磁界による配向方法が提案されている(特許第3307418号)。パルス磁界では1.5〜5.5Teslaの磁界をかけることができて、Br(残留磁束密度)が向上する効果が確認されている。しかし、この発明のように金型プレス機内でパルス磁界を加えると、磁界をかける度に渦電流損やヒステリシス損が発生して金型が発熱する。また、金属製の金型に瞬間的な衝撃が加わり、精密機械であるプレス機の寿命を短くするため、実用的でない。\n\n【0032】\n\n[圧粉体強度を上げるために]\n\n金型プレス法の作業性を向上させるためにバインダーや潤滑剤を添加したり、湿式成形する方法が提案されているが、いずれも強い圧力で圧縮することが前提となっており、これら成分は圧粉体内部に強く閉じ込められて、焼結前段階の脱脂工程において容易に除去されない。低い温度で長時間加熱することで脱脂が完全に行われることがあるが、生産性は著しく低下する。成分が残存するまま高温で過熱すると、炭素などの不純物が構成元素と反応して特性が低下し、耐食性が悪くなる。\n\n【0033】\n\n[湿式成形法]\n\n微粉末の酸化を防ぎながら高い配向性を達成するために鉱物油·合成油と微粉末の混合物を磁界中で湿式圧縮成形する方法が提案されている(特許第2859517号等)。ジェットミルで微粉砕した粉末を鉱物油あるいは合成油中に集積し、混合した後、金型キャビティ内に加圧注入·加圧充填する。湿式成形はSrフェライト磁石の製法技術の応用であるが、フェライト磁石では水を用いるのに対して希土類磁石では水を用いることができず、溶媒や油を用いる。しかし油中には炭素など不純物となる成分を多く含み、焼結段階で抜けにくい。容易に蒸発して残留しない油が研究されているが、固く圧縮した圧粉体内に閉じ込められた炭素を取り除くのは困難である。油が蒸発して、希土類と反応しない温度で脱脂する作業が必要であるが、そのためには比較的低温で長時間保持しなければならず、量産効率が著しく悪くなる。脱脂が十分に行われないと、高い温度で希土類元素と容易に反応して磁気特性を劣化させるとともに耐食性を悪くする原因となる。\n\n【0034】\n\n[無酸素工程]\n\n金型プレス法では、微粉は大気中に晒される。微粉末を作成後、磁界中プレスから焼結炉への搬入までを不活性ガス雰囲気中で行うとする提案がある(特開平6-108104)。しかし実際には金型周辺に飛び散った微粉を掃除したり、頻繁に金型を取替えることが不可欠である。飛び散った微粉をそのままにしておくと、開放するときに非常に危険である。磁石微粉は嵩が大きくブリッジを作り易いために定量供給がうまくいかず、定期的に圧粉体重量を測定してフィードバックする必要がある。一般焼結品のように多量のバインダーと高圧を用いて成形して堅牢な圧粉体を作成するようなことは、希土類磁石ではできない。したがって、圧粉体は脆くこわれやすい。ところが金型プレス機は大型であるため、グローブボックスのように人間の手を差し入れて作業することはできない。すなわち、金型プレス機を含む工程全体を不活性雰囲気中に置くというアイデアは、現実的でない。\n\n【0035】\n\n[消磁]\n\n金型プレス後の圧粉体は搬送され、焼結台版に並べられる。磁界中プレスされた圧粉体は、小さな磁石の集合体であり、圧粉体にも磁石の性質がある。そのため、圧粉体同士の吸引反発力で衝突し、欠け·割れなどを生じる。したがって、予め圧粉体を消磁する方法が採用されている。実際には、金型プレス中でもっとも圧縮した状態で、逆向きの磁界または交番減衰磁界を加えることによって行われる。圧縮した状態では粒子は動けなくなっているから、逆磁界や交番磁界を加えても粒子の配向が乱れることはないとされている。\n\n【0036】\n\n[微粉末を用いない理由]\n\nダイス·パンチのクリアランスを如何に小さくしようと、3μmの微粉を閉じ込めるのは\n\n不可能であり、微粉末を圧縮するたびにはじき出された微粉末が金型周辺に飛び交うことになる。それらは、発火·爆発の危険性をもつ。自動集塵機で集めることは可能だが、定期的に掃除が必要である。\n\n現実のRFeB焼結磁石の粉末粒径は、レーザー式粉末粒度分布測定装置により測定される粒径の中央値であるD50が5〜10μmくらいであるとされる。D50の測定値は顕微鏡による実測値の大きさに近いことが知られている。R2Fe14B金属間化合物の単磁区粒子径はさらに小さい(0.2〜0.5μm)。従って、焼結磁石の場合においても、より小さな粉末粒子径の方が高い保磁力を期待できる。ところが実際には、特開昭59-163802号第3図から明らかなように、粒子径が小さくなると急激に保磁力が低下する。これは、微粉を取り扱う従来工程において酸化が避けられないことを示している。\n\n化学的に活性な希土類元素を含むRFeB合金微粉は、非常に酸化し易く、大気中に放置すると発火することがある。粉末粒径が小さいほど発火の危険性は大きくなる。発火しないまでも容易に酸化し、焼結磁石において非磁性の酸化物として存在し、特性低下の原因となる。しかし従来法では、成形プロセスと、成形体を焼結炉に搬入するプロセスで大気に晒すことが避けられない。\n\n現実の微粉砕粉末の粒径はD50で3〜5μm程度であり、これより細かいと、たとえ成形体であっても容易に酸化が起きる。微粉末に予め油や液体潤滑剤を添加し、酸化防止の相乗効果を持たせようとする試みがあるが、潤滑剤などの多量の添加は圧粉体強度を弱くし、また炭素などを残留させて磁気特性を低下させる。すなわち、3μm以下の微粉を、従来の金型プレス法で事実上取り扱うことはできない。\n\n粉砕·成形·焼結炉搬入プロセスを窒素などの不活性ガス雰囲気中で一貫処理する方法が提案されている(特開平6-108104)。しかし実際には従来の金型プレス方式では、量産性の観点からプレス機は大型にならざるを得ず、余分な微粉を掃除したり、製品品番ごとに金型を取り替える必要があって、大型金型プレス機全体を不活性雰囲気に覆うのは現実的でない。\n\n【0037】\n\n[金型プレス法の限界]\n\nネットシェイプと歩留まりの観点からは金型プレス法がすぐれている。磁気特性を犠牲にしながらも、ネットシェイプ性から金型プレス法がもっとも量産性のすぐれたものと判断されている。効率面から大型のプレスが用いられるが、電磁石の磁界の条件からプレス機の大きさや形状に制限がある。パルス磁界は使えない。高い配向を狙うためには潤滑剤が必要だが、潤滑剤によっては残留炭素のために特性が劣化したり、圧粉体強度が低下して歩留まりが悪くなる。一方向加圧のために配向した粒子が乱れる。また、消磁工程で配向が乱れる。大型プレスを雰囲気中に設置して完全自動化を実現するにはさまざまな制約がある。\n\nRFeB合金は金属間化合物で構成されており、延性·展性の性質はほとんどなく、硬く脆い。したがって、金型を磨耗し、寿命を短くする。また、造粒粉を用いることができないので流動性の悪い微粉末をそのまま用いなければならないことや、圧縮成形時に外部から磁界を加える必要があることから、プレスサイクルは必然的に遅くならざるを得ない。それでもなおプレス工程を効率よくするため、プレス機を大型にして一度に多数個を圧縮成形する方法が一般的である。しかし、電磁石で一定強度の磁界を与える必要があるため、金型内の磁界の均一性や電源装置の大きさ、磁界が周囲の作業環境に与える影響などの理由から、プレス機を無制限に大きくすることはできず、数百トン程度に制限される。\n\n【0038】\n\n[本発明の目的]\n\n当初は、大きな鋳造インゴットを粉砕していた。鋳造法では冷却速度が遅いために局所的にα-鉄が析出し易く、保磁力が大きく低下する原因となる。α-鉄の析出を抑えるためにはR2Fe14B組成比よりもに多量の希土類元素を配合せねばならず、希土類元素は合金の飽和磁化を下げて最大エネルギー積を低下させる。急冷法(ストリップ·キャスト法)ではα-鉄の析出を抑えることができて、希土類量の配合を少なくできるため、高エネルギ\n\nー積が得られる(特開2002-208509等)。但しこの場合においても従来の成形法を採用する限り、成形時の配向度の低下を抑えることはできない。\n\n粉末を取り扱う工程について詳述する。粗粉砕は、この合金の水素吸蔵性を利用して行われる。インゴット等合金を水素中に放置すれば、合金にマイクロクラックが入る。次いで機械的粉砕によって粒度が整えられる。この段階では、数十から数百μmの大きさである。水素を吸蔵したままでは発火し易いので、脱水素のための熱処理が行われる場合がある。\n\n微粉砕にはボールミル·アトライター·振動ミル·ジェットミルなどが利用される。中でも、超微粉末を取り除いてシャープな粒度分布の微粉末を得ることができるジェットミルが広く用いられる。ジェットミルでは、不活性の窒素ガスの高速気流中で粉砕を行うが、金属粉末の安定性を増すために気流中に故意に少量の酸素(大気)を混入して、粒子表面に酸化皮膜を形成することがある。このような粉末は比較的安定である。細かくなりすぎた超微粉は高速気流に運ばれて、粉砕機外(集塵機)に排出される。\n\nかつて微粉砕中の酸化を避けるために有機溶媒中でのボールミルやアトライター粉砕が実施されていた時期があった。超微粉が混入したり、有機溶媒中の炭素成分が焼結磁石中に残存して特性や耐食性を低下させる。現在ではジェットミル粉砕が主流である。ジェットミル粉砕ではシャープな粒度分布の微粉末が得られるため、磁気特性の面でもジェットミル粉砕法がすぐれている。\n\n以上は主にRFeB磁石を中心に述べたが、もう一方の希土類磁石であるサマリウム·コバルト磁石(1-5型、2-17型)においてもまったく同じ状況であり、本発明の製造方法及び製造装置はサマリウム·コバルト磁石にも適用される。\n\n金型プレス法·CIP·RIPいずれの方法においても、強く圧縮することによって堅牢な圧粉体を作ることを目的とする。ひとつはハンドリングを容易にすること、もうひとつは充分な焼結密度を得ることである。ところが強く圧縮することは、配向の乱れを生じる原因となる。\n\n本発明は、さまざまな問題点や矛盾点を包含する従来の金型プレス工程を含まない、磁気異方性希土類焼結磁石のまったく新しい製造方法を提供する。\n\n初期のRFeB焼結磁石製品の磁気特性レベルは、高エネルギー積材で最大エネルギー積((BH)max)= 35MGOe·保磁力(iHc)= 12kOeクラス、高保磁力材で(BH)max = 30MGOe·保磁力 = 17kOeクラスであった。高エネルギー積材は温度など環境の影響を比較的受けないMRI装置やスピーカーなどに、高保磁力材は温度上昇やコイルからの逆磁界を受けるモーターなどに主に用いられてきた。本発明は、高い最大エネルギー積を保持したまま、高い保磁力を有するRFeB焼結磁石を提供することを目的とする。\n\n【0039】\n\n[高保磁力を得るために]\n\nRFeB磁石やSmCo5磁石は単磁区微粒子型磁石で、単磁区微粒子の大きさのときに最大の保磁力が得られる。NdFeB磁石の場合には単磁区粒子径の大きさは0.2〜0.3μm程度である。この微粒子が磁界によって配向され、粒成長を起こすことなく焼結された場合にのみ、緻密で均一な微細組織が形成される。しかし現行の量産方式、特に金型プレスを用いる方法では、得られた焼結磁石の結晶粒径の大きさは5〜10μm程度であり、理想的な大きさよりも一桁大きい。このときに用いられる粉末の粒度もD50で5〜10μmの程度である。これは金型プレスの工程上の制約によるものであると考えられる。すなわち現行の製造プロセスでは金型プレスから焼結炉搬入までの工程において大気中に晒されることが避けられない。金型プレスの圧縮時に金型クリアランスから微粉が飛び出し、微粉末は金型プレスに磁界が加えられるたびに磁界に引き寄せられてダイセット周辺を飛び交うことになる。そのような状態を避けるために予め大量のバインダーを添加して強く加圧することで堅牢な圧粉体を作ろうとすると、圧粉体中に強く封じ込められたバインダー成分が焼結時に磁石成分と反応して特性が低下したり、強く加圧することで粉末の配向が乱れることになる。\n\nしたがって従来の金型プレス法では、理想的な単磁区微粒子型焼結磁石を得ることが不可能なのである。\n\n【課題を解決するための手段】\n\n【0040】\n\n上記課題を解決するために成された本発明に係る磁気異方性希土類焼結磁石の製造方法の第1の態様は、\n\n一部に脱気用細孔又は溝を設けた充填容器に、レーザー式粉末粒度分布測定装置で測定される平均粒径D50が5μm以下であってDy及びTbを含有しないNdFeB磁石の合金微粉末を高密度充填する工程と、該充填容器に充填した状態で合金微粉末を磁界中配向する工程と、該充填容器に充填した状態で合金微粉末を焼結する工程とを有し、上記各工程を無酸素又は不活性ガス雰囲気である容器内で一貫して行うことを特徴とする。\n\nまた、一部に脱気用細孔又は溝を設けた充填容器に、レーザー式粉末粒度分布測定装置で測定される平均粒径D50が5μm以下であって6重量%以下のDy及び/又はTbを含有するNdFeB磁石の合金微粉末を真密度に対して46.4%から55%の間の密度で高密度充填する工程と、該充填容器に充填した状態で合金微粉末を磁界中配向する工程と、当該充填容器に充填した状態で合金微粉末を焼結する工程とを有し、上記各工程を無酸素又は不活性ガス雰囲気である容器内で一貫して行うようにしてもよい。\n\n【0041】\n\n本発明に係る磁気異方性希土類焼結磁石の製造方法の第2の態様は、\n\n一部に脱気用細孔又は溝を設けた充填容器にDy及びTbを含有しないNdFeB磁石の合金微粉末を高密度充填する工程と、該充填容器に充填した状態で合金微粉末を磁界中配向する工程と、該充填容器に充填した状態で合金微粉末を保形するまで予備焼結する工程と、該予備焼結体を該充填容器から取り出し、その後焼結する工程とを有し、上記各工程を無酸素又は不活性ガス雰囲気である容器内で一貫して行うことを特徴とする。\n\nまた、一部に脱気用細孔又は溝を設けた充填容器に6重量%以下のDy及び/又はTbを含有するNdFeB磁石の合金微粉末を真密度に対して46.4%から55%の間の密度で高密度充填する工程と、該充填容器に充填した状態で合金微粉末を磁界中配向する工程と、該充填容器に充填した状態で合金微粉末を保形するまで予備焼結する工程と、該予備焼結体を該充填容器から取り出し、その後焼結する工程とを有し、上記各工程を無酸素又は不活性ガス雰囲気である容器内で一貫して行うようにしてもよい。\n\n【0042】\n\n第2の態様の製造方法において、予備焼結の温度は500℃から焼結温度よりも10℃低い温度までの間であることが望ましい。また、予備焼結後に充填容器の一部又は全部を交換することができる。\n\n【0043】\n\n本発明の磁気異方性希土類焼結磁石の製造方法において、微粉末の充填から焼結までを無酸素又は不活性ガス雰囲気中で行うことができる。\n\n【0044】\n\n本発明の磁気異方性希土類焼結磁石の製造方法において、磁気異方性希土類焼結磁石は希土類鉄ホウ素磁石又は希土類コバルト磁石とすることができる。\n\n【0045】\n\n本発明の磁気異方性希土類焼結磁石の製造方法において、充填容器は単個又は多数個取りとすることができる。充填容器はその一部又は全部を非磁性材とすることができる。あるいは、充填容器はその一部を強磁性材とすることができる。この強磁性材は、充填容器の磁極両端部に強磁性体を配置したものとすることができる。また、磁界中配向後の充填容器中の微粉末は均一充填されていることが望ましい。更に、充填容器はネットシェイプとすることができる。\n\n【0046】\n\n本発明の磁気異方性希土類焼結磁石の製造方法では、合金微粉末の平均粒径は5μm以下とすることができる。この平均粒径は2μm以下とすることができ、また、1μm以下とすることができる。ここで、平均粒径には、レーザー式粉末粒度分布測定装置により測定される粒径の中央値(D50)を用いることができる。\n\n【0047】\n\n充填密度が真密度に対して40パーセントから55パーセントの間で微粉末を充填容器に充填することが望ましい。また、機械タッピング法又はエアー·タッピング法を用いて微粉末を充填容器に強制充填することができる。\n\n【0048】\n\n磁界はパルス磁界とすることができる。このパルス磁界の強度は3テスラ以上であることが望ましい。また、パルス磁界は一周期以上の交番磁界とすることができる。\n\n【0049】\n\n溶湯急冷法により得られた合金を微粉末に用いることができる。\n\n【0050】\n\n潤滑剤を添加混合した微粉末を充填容器に充填することができる。この潤滑剤は液体潤滑剤とすることができる。この液体潤滑剤には脂肪酸エステル又は解重合ポリマーを主成分とするものを用いることができる。\n\n【0051】\n\n本発明に係る磁気異方性希土類焼結磁石の製造装置の第1の態様のものは、\n\na)合金を微粉砕した微粉末を充填容器に高密度充填する微粉末充填手段と、\n\nb)微粉末を磁界中配向する磁界中配向手段と、\n\nc)当該充填容器のまま微粉末を焼結する焼結手段と、\n\nd)充填容器を微粉末供給手段、磁界中配向手段、焼結手段の順に搬送する搬送手段と、\n\ne)微粉末充填手段、磁界中配向手段、焼結手段及び搬送手段を収容する容器と、\n\nf)前記容器の内部を無酸素又は不活性ガス雰囲気にする雰囲気調整手段と、\n\nを備えることを特徴とする。\n\n【0052】\n\n本発明に係る磁気異方性希土類焼結磁石の製造装置の第2の態様のものは、\n\na)合金を微粉砕した微粉末を充填容器に高密度充填する微粉末充填手段と、\n\nb)微粉末を磁界中配向する磁界中配向手段と、\n\nc)当該充填容器のまま微粉末を保形するまで予備焼結する予備焼結手段と、\n\nd)予備焼結した微粉末を焼結する焼結手段と、\n\ne)充填容器を微粉末供給手段、磁界中配向手段、予備焼結手段、焼結手段の順に搬送する搬送手段と、\n\nf)微粉末充填手段、磁界中配向手段、予備焼結手段、焼結手段及び搬送手段を収容する容器と、\n\ng)前記容器の内部を無酸素又は不活性ガス雰囲気にする雰囲気調整手段と、\n\nを備えることを特徴とする。\n\n【0053】\n\n本発明の磁気異方性希土類焼結磁石の製造装置は、前記容器を収容する外部容器を備えることができる。\n\n【発明の実施の形態及び効果】\n\n【0054】\n\n本発明によれば、磁気異方性希土類焼結磁石の製造方法において、目的とする寸法、形状より予め定められた充填容器中に微粉末を充填し、外部から磁界を加えて粉末を配向した後、そのまま焼結する。\n\n【0055】\n\n本発明の製造方法は、RCo(希土類コバルト)磁石やRFeB(希土類·鉄·ホウ素磁石)の製造に適用される。\n\n【0056】\n\n本発明によれば、微粉末を充填容器に閉じ込めた後、磁界を加え、そのまま焼結工程に移行する。微粉が飛び交うことはなく、希土類磁石の微粉であっても安全に取り扱うことができる。\n\n【0057】\n\n本発明によれば、微粉末充填、磁界の印加、焼結炉への搬入までのプロセスの一切が無酸素又は不活性ガス雰囲気中で行われる。希土類磁石は酸素など不純物の影響を受ける。RFeB磁石にせよ、1-5型SmCo磁石にせよ、予め酸化される希土類量を見込んで、その化学量論組成よりも希土類リッチ側に組成を選択することが必要とされる。しかしその分、非磁性相が多くなって、特性が低下する。本発明によるプロセスをNdFeB磁石、SmCo磁石の希土類磁石に適用すると、微粉末の状態で大気中の酸素に触れる機会がないため、焼結体の酸素を低減できる。この場合、酸化される希土類量を予め見込む必要がないため、希土類(Nd, Sm)量を極限まで下げることができて、高い磁気特性を得ることができる。同時に圧縮プロセスがないため高配向が維持されて、高Br·高エネルギー積が実現される。\n\n【0058】\n\n本発明における充填容器には脱気用の細孔又は溝が設けられる。たとえ窒素などの不活性ガスを用いて微粉砕したところで、微粉末には水素や窒素、水分などの吸着ガス成分が必ず存在する。それらは焼結時の温度上昇時に蒸発するが、充填容器を密閉状態にすると高温において反応性が高まり、磁石成分と反応する。脱気用の細孔又は溝はひとつの充填容器に何個あってもよいが、脱気の効果を高めるには複数個あるのが好ましい。\n\n【0059】\n\n金型プレス法において、ダイスとパンチのクリアランスを如何に小さくしようと、3μmの微粉末を封じ込めることは不可能である。特開平6-108104には粉砕、成形、焼結炉搬入までのプロセスを窒素などの不活性ガス雰囲気中で一貫処理する方法が提案されているが、金型プレスより排出された微粉を閉ざされた空間に封じ込めるのはきわめて危険である。現実の金型プレスは量産効率の観点から大型にならざるを得ず、製品品番ごとに金型を取り替える必要があり、その都度、排出された微粉末を掃除しなければならない。微粉末が浮遊する状態で大気に曝すと火災·爆発の危険性がある。したがって、大型のプレス機全体を雰囲気中に封じ込める方法は現実的でない。\n\n【0060】\n\n目的とする寸法、形状より予め定められた充填容器中に微粉末を充填し、外部から磁界を加えて粉末を配向した後、そのまま予備焼結することができる。\n\n【0061】\n\n磁石合金微粉末は充填容器内に高密度充填される。高密度充填の程度は従来の金型プレス法やCIP法、RIP法における充填の程度よりも高く、従来の金型プレス法やCIP法、RIP法における圧縮成形体の充填の程度よりも低い。従来法では圧粉体ハンドリングのために堅牢な圧粉体強度が必要であったが、本発明において圧粉体ハンドリング工程が存在しないため、圧縮する必要がない。\n\n【0062】\n\n充填容器内に高密度充填された粉末は容器内に均一に充填されて、焼結体に充分な密度が得られる程度であればよい。具体的にはパルス磁界配向後に粉末の偏りが生じない程度でよい。このような状態は、焼結後に焼結体断面に微細な空孔の有無によって確かめることができ、空孔のほとんど存在しない状態がよい。\n\n【0063】\n\n本発明に用いる充填容器の一部に脱気用細孔又は溝を設けるのは、焼結加熱時に粉末から蒸発するガス成分が充填容器中に留まるのを避けるためである。本発明の原料粉末は金属間化合物を主相とするため、水素や水分などの吸着ガスを避けることができない。容器を密閉するとガス成分が膨張するおそれがある。また、本発明において配向を高めるために液体潤滑剤を加えることが好ましい。液体潤滑剤成分は高温において磁石成分と反応するおそれがある。本発明に用いる充填容器の一部に脱気用細孔又は溝を設けるのは、これらガス成分が容器中に留まることを防止するためである。\n\n細孔又は溝の大きさは、容器中の粉末が磁界パルスなどの衝撃などによって容器外に飛び出すことのない程度に小さな方が望ましい', '【技术领域】\n\n【0001】\n\n本发明涉及一种制造高性能稀土磁铁和制造装置的方法。\n\n发明背景\n\n【0002】\n\n稀土,铁和硼基烧结磁体(以下称为“RFEB磁铁”)不仅超越了到目前为止的永磁材料的特性,而且还在钕(稀土元素之一),诸如铁等资源和硼使用丰富的原材料是便宜的,并且已经在1982年出现后稳定地将市场视为理想的永磁材料。主要应用是电脑HDD(硬盘驱动器)磁头驱动电机VCM(音圈电机),豪华扬声器,耳机,电动辅助型自行车,高尔夫球推车,永磁型磁共振诊断装置(MRI)是。此外,实用使用也在电机,节能,低噪音大型家电(冷却器,冰箱)和工业电机中的实用应用。\n\n【0003】\n\nRFEB磁铁具有高磁性,但具有温度特性差的缺点。特别地,矫顽力的温度特性是重要的。尽管在外观以来,RFEB磁体已被广泛使用,但最常用的领域是计算机HDD和MRI的VCM。所有这些都在稳定的室温下使用。\n\n【0004】\n\n当用于家用电器和工业电机时,不能避免由于线圈电流引起的温度升高。此外,由于当温度升高并且矫顽力减小时,由于逆磁场从电动机电枢作用,在永磁体中发生不可逆的去磁。为了防止不可逆的退磁,不必提前增加矫顽力。\n\n【0005】\n\nRFEB磁体于1982年发现本发明的发明人(美国专利No.5,512该RFEB磁体具有四边形晶体结构的磁各向异性2Fe.14B金属化合物是主要阶段。为了获得高磁性,需要使用磁各向异性的特性,并且除了烧结方法之外,铸造,热处理和老化处理方法(PAT。美国专利号2,561,704)或淬火合金是死的。提出了用于镦锻处理的方法(专利No.4,792,367)。然而,这些方法差于磁性和生产率的烧结方法。烧结方法是获得永磁体所需的致密和均匀微观结构的最佳方法。\n\n【0006】\n\n[烧结过程]\n\nRFEB烧结磁体通过组合物配合,溶解,铸造,研磨,磁场压缩成型,烧结和热处理的组合物制造。\n\n【0007】\n\n[作品]\n\n找到RFEB磁体后,添加元素(日本专利No.1606420等),热处理(专利No.1818977等),晶粒尺寸控制(专利No.1662257等)等。为改善特性等。尽管澄清了效果,但改善矫顽力最有效的是加入重稀土元素(Dy,Tb)(专利No.1802487)。如果使用大量的重质稀土元素,则矫顽力可靠地增加,但饱和磁化减小,并且最大能量产品降低。此外,由于DY和TB限于资源,因此它是昂贵的,因此不可能覆盖预计未来需求的电动汽车和工业/家用电机。\n\n【0008】\n\n[解散]\n\n烧结磁体需要致密和均匀的微观结构。最初,铸造和粉碎合金熔融金属的方法通常(例如,专利No.1431617)。如果通过条带铸造方法淬火熔融合金,则抑制α铁的外观,并且通过减少非磁性稀土元素(专利No.2665590,JP 2002-208509等)来获得高能量产物。 )。\n\n【0009】\n\n[减少扩散方法]\n\n用金属Ca和RFEB合金粉末混合稀土氧化物粉末,铁粉,铁摩托粉等混合加热\n\n有一种方法可以直接获得它。\n\n【0010】\n\n[格雷什]\n\n当RFEB合金吸收氢时,合金中产生微裂纹,便于研磨(专利No.1674022)。由于获得了尖锐的粒度分布的粉末,用于细碎粉末,使用诸如氮的惰性气体的喷射磨机是主流(专利No.1883860等)。\n\n【0011】\n\n[成型]\n\n通过在磁场中的压缩成型(日本专利No.2,762,778)中压缩成型来形成具有磁各向异性烧结磁体的磁各向异性烧结磁体的方法,然后将RCO磁铁和RFEB应用于A.磁铁(美国专利号3,684,593等,专利。美国专利号14,316,17)。\n\n通过将RFEB方形结构的C轴在一个方向上对准,使细粉末成形。虽然模压方法是通用的,但是存在CIP方法(专利No.338348)和RIP方法(日本专利No.3383448)和RIP方法(专利No.3383448)和获得高能量产品的方法。\n\n【0012】\n\n[模具压力机]\n\n磁场的烧结和烧结的方法用于磁各向异性永磁体的制造方法,具有1951年的铁氧体磁铁(日本专利公开No.35-8281,美国专利号2,762,777)在同年,通过高升等(日本专利公开No.29-885,美国专利No.2,762,778)发明了磁各向异性烧结铁素体磁体。已经进行了许多改进以克服模具压力机方法中的缺点。\n\n【0013】\n\n[添加润滑剂]\n\n为了在模塑成型时增强细粉的取向,存在添加润滑剂以减少粉末,粉末,粉末和模具摩擦(PAT。美国专利号2545603,3459477等)。\n\n【0014】\n\n[湿磁场按]\n\n为了在防止氧化细粉的同时实现高取向,可以将矿物油,合成油或植物油和细粉捏合到模具中,并且在磁场中存在湿式压缩成型方法(专利美国专利号2731337等在这种情况下,有一个报告可以获得浆料和加压填充物,以获得高烧结密度和高磁特性(专利No.2859517)\n\n【0015】\n\n[CIP]\n\n模塑方法只能从一个方向采用压力,这是扰乱取向的原因。如果压力可以从每个方向上同时地应用,则取向的干扰减小。将细粉末置于橡胶容器中,并从外部施加磁场,施加冷静压压榨机(CIP)(PAT。美国专利号3383448等)。\n\n【0016】\n\n[RIP]\n\n作为获得与冷静水压机相同的效果的方法,本发明人提出了一种RIP(橡胶等静压)方法作为在模具压机中安装橡胶型的方法,并添加各向同性压力(PAT。美国专利号2030923) 。这种方法是促进自动化的,因此它比CIP更加批量生产。\n\n【0017】\n\n[MIM]\n\n已经提出了一种方法,其中捏合大量的粘合剂和细粉,并将温度升高到较低的粘度中(专利No.3078633)。\n\n【0018】\n\n[在]\n\n空气钉作为填充模腔的方法,如模板\n\n提出了Ping(空气/攻丝,空气攻丝,AT)方法(日本专利公开No.9-78103,JP-A-9-169301,JP-A-9-225693)。空气攻丝的特征在于,高速空气流量从粉末供应料斗流向腔,比该孔较慢。使用空气分化方法,通过将粘合剂预先将粘合剂混合而获得的粉末填充在腔中,使用如加热的装置固化,并获得近净形状的形成体(日本专利公开No.2000- 96104)。\n\n【0019】\n\n[脉冲磁场]\n\n采用外部加入粉末方向的磁场的方法。在RFEB磁体的情况下,四边形结构的C轴方向对应于磁化轴,并且当添加磁场时,粉末在一个方向上取向。在正常模具压机的情况下,加入电磁铁的磁静电场,最高可达15只koe的程度。然而,利用使用飞机线圈的脉冲磁场,可以施加15至55只koe的强磁场,通过添加高磁场(专利No.3307418)来改善磁特性。\n\n【0020】\n\n[关闭系统]\n\n已经提出在惰性气氛下进行研磨过程和成形过程,以避免粉末的氧化(JP 43,6-108104)。\n\n【0021】\n\n专利文献1 1431617\n\n发明的描述\n\n本发明要解决的问题\n\n【0022】\n\n[烧结法的效果]\n\n粉末冶金(烧结)方法提供致密且均匀的微观结构。在稀土钴磁铁和R-Fe-B磁铁中,无法获得高性能永磁体,使高性能永磁体。\n\n【0023】\n\n[磁场压模]\n\n1951年使用了磁性各向异性烧结磁体的制造方法中的烧结和烧结的方法。发明磁铁(日本专利Paple 35-8281,美国专利号2,762,777)。完成后立即首先,磁各向异性烧结铁氧体磁体出现通过高士等(日本专利公开No.29-885,美国专利No.2,762,778)。压缩模塑的目的被认为是通过压缩挤压液体粘合剂组分并固定取向的颗粒。此外,优选压缩成型以获得所需的形状。尽管存在在没有压缩成型的情况下在磁场中加热容器的示例,但是密度低,与压缩模制例相比,磁性低。\n\n此后,在RCO烧结磁铁(美国专利No.3,684,593)和RFEB烧结磁铁上拍摄磁场中的压缩成型和烧结的方法(PAT。美国专利号1431617)。添加磁场是定向颗粒的重要步骤,但是特别深度考虑是为了压缩的影响。\n\n模压机具有直角磁场系统和平行磁场系统。 X-,Y-,Z-3轴。在并联磁场系统中,施加磁场在Z轴向上并同时在Z轴向上加压。通过磁场布置在Z轴向方向上的细颗粒也从Z轴向上加压,倾斜在X轴向方向,通过摩擦轴线Y轴向,并且序列受到干扰。另一方面,在正交磁场系统中,磁场沿X轴向方向施加并布置,并从Z轴向加压。类似地,尽管在X轴向方向上倾斜,但是当倾斜在Y轴向方向时,粉末仅为低,并且序列本身很小。也就是说,尽管在平行磁场系统中在两个方向上被扰乱,但是该布置在方向磁场系统中仅是一个方向,但是在直角磁场系统中的特性高。\n\n【0024】\n\n[为什么选择模具压力机]\n\n使用模具压力机的原因之一几乎接近最终形状和尺寸(网\n\n获得形状,产量很好。特别地,从净形状和产率的观点出发,模具压力机被广泛采用了适用于大规模生产的方法。\n\n【0025】\n\n[CIP]\n\n将细粉末置于橡胶容器中并密封,并且在从外部施加磁场之后,存在施加CIP(冷等静压)(CLD Istitic压制)的方法(PAT。美国专利号3383448等。 )。取向的干扰较小,因为施加压力而不是从一个方向上加压,这些方向扰动诸如模具压力机的颗粒的对准。可以添加脉冲磁场的高磁场以定向粉末。可以添加高压以获得鲁棒管。但是,需要进行处理的退磁过程。因为不可能获得所需的民意调查粉末,因此产量差,加工过程需要时间。另外,由于手动工作无法避免,它不会批量生产。\n\n【0026】\n\n[RIP]\n\n作为获得与CIP相同的效果的方法,本发明的发明人首先提出RIP(橡胶等静压)方法(PAT。No.2030923等)。在RIP中,将细粉末放置在橡胶型中,施加脉冲磁场,并且通过模具压机机加压整个橡胶型。由于在CIP方法中施加压力,因此施加压力并且可以使用脉冲磁场,因此特性高于模具压力机。在该方法中,可以进行批量生产,因为可以连续地自动化橡胶型填充,脉冲磁场施加,压缩成型和退磁过程的过程。\n\n因为它是浮芯系统,RIP器件的体积不需要精确的模具诸如模压机,并且撕裂装置的体积不是必需的,只需几分钟的压力机。因为它是一个小尺寸,可以密封全局箱形式。由于可以添加大的压力,因此可以在不使用粘合剂的情况下获得鲁棒管。\n\n然而,该磁铁的细粉末在金属间化合物合金质量,不均匀的球形粉末之间研磨,但具有各种形状的断裂表面,CIP撕裂,并且如果施加大力。很难去除由于灵活的摩擦,取向的扰动。另外,由于使用橡胶型,因此释放了食指的去除过程,并且难以自动化该过程直至烧结炉输送。\n\n【0027】\n\n[mim]\n\nMIM(金属注塑成型:金属注射成型)注塑成模具,增强了由合金粉末和大量粘合剂组成的捏合材料的温度(体积比40%至50%)和粘度降低。有可能为了获得成型体,将其放入炉中并在提高温度的同时逐渐增加温度。在磁各向异性磁体的情况下,静磁场预先从模具的外部加入。一种使用石蜡作为粘合剂的方法(日本专利申请公开No.44-28302),已知一种使用琼脂或甲基纤维素(专利3078633等)的方法。实现了净形状特性,但报告的磁性是相当低的。由于粘合剂蒸发和粘合剂组分和稀土元素没有反应的低温范围,因此需要时间并且生产效率非常糟糕。\n\nMIM方法是具有高压注入的填充方法,没有压缩步骤。由于使用了大量的粘合剂,因此由于残留的碳等而降低了特性。它从净形状的角度出色,但磁特性低。\n\n【0028】\n\n[磁场中的压榨过程的详细信息]\n\n在悠久的历史中,模具压力机方法已经自动化了高效的工作。该过程大约如下。\n\n·细粉通过进料器供应到模具中。\n\n·降低上冲头并密封腔。\n\n·添加磁场。\n\n·添加磁场时,用上冲孔和下冲击加压。\n\n·用逆磁场或交替磁场脱极杆。\n\n·上部冲孔上升。\n\n·较低的冲头升高(或骰子跌落),并在模具上推出轮询粉末。\n\n·机器人臂带有传送带的人员。\n\n·粉末体收集在一个地方。\n\n·安排在烧结表版本上。\n\n此时,它以间隔排列以避免碰撞和焊接。根据工作情况,可能会储存几天的轮询体。\n\n粉末冶金方法中使用的模压机是一种精密机。如果是单个(一个)按下按下,则打孔骰子的对准相对容易,但对于许多情况而言,它复杂。磁铁需要各种形状和尺寸,如盘,矩形和穿孔盘,弓形,并且需要复杂的模具更换工作。\n\n【0029】\n\n[磁场压缩成型的目的和效果]\n\n关于压缩成型的作用,例如* *稀土铁永磁体\"编辑的JMDCoey,Clarendon Medres,牛津,1996,在PP340-341中,按压负荷足以使具有足够强度的紧凑型处理但武出微晶的显着误导。ING。\n\nJ.ORMEROD * *粉末冶金稀土永磁铁\"粉末冶金1989,Vol.32,No.4,P247“压力应足以使粉末紧凑的机械强度承受处理,但不足以引起粒子杂散。(压力即将提供足够的机械强度以承受对民意调查的处理),但它必须使其不如导致导致的湍流一样高粒子。“有一个描述。\n\n在任何文件中,认识到有必要强烈压缩以使极度强度用于处理,同时识别出在大压力加压时取向受到干扰。有。\n\n【0030】\n\n[稀土磁铁特有的问题]\n\n稀土磁体含有约30重量%的稀土元素,易于氧化和化学氧化。在稀土烧结磁体制造工艺中,存在大量的化学活性稀土元素,以及处理约3微米平均粒度的细粉末的步骤。\n\n由于其中一个细粉末需要在磁场中以预定方向定向,因此不可能使用用于改善粉末的流动性的装置,并改善粉末冶金中使用的粉末的流动性。细粉末是笨重的,并且其中一个粉末具有磁体的性质,使得粉末被供应到模腔,形成桥梁,并且均匀填充难以困难。\n\n【0031】\n\n[提高方向]\n\n为了增加模塑成型时细粉的取向,已经提出了添加润滑剂的方法(日本专利No.3459477,JP-A-8-167515等)。润滑剂具有降低细粉末的摩擦的效果,并且在施加磁场时提高取向程度。然而,添加大量润滑剂以获得足够的润滑效果,需要很长时间脱脂。\n\n一些液体润滑剂(例如JP-A-2000-306753)的挥发性优异,并且几乎不会保留在烧结体中。然而,将大量润滑剂添加到提高方向的目的,导致模具压制后的压力和粉末强度削弱并导致处理问题。\n\n在模具压机机中,根据电磁铁添加磁场。由于电磁铁的磁静电场通过芯的磁通量饱和,因此它保持最多10至15个OE(1至1.5吨)。磁场\n\n当按下时,粉末的弯曲力变大并且粉末旋转,取向受到干扰。\n\n已经提出了脉冲磁场的对准方法(专利No.3307418)。在脉冲磁场中,可以施加1.5至5.5特斯拉的磁场,确认改善BR(残留磁通密度)的效果。然而,如在本发明中,在模具压机机中添加脉冲磁场会导致涡流丢失或滞后丢失,以每次施加磁场时产生模具度。此外,将瞬时冲击添加到金属模具中,缩短了缩短电机的寿命是不实用的。\n\n【0032】\n\n[提高粉末强度]\n\n尽管已经提出了一种添加粘合剂或润滑剂以提高模具压力机方法的可加工性的方法,但假设它们全部在强大的压力下压缩,并且这些部件是强烈限制在粉末粉末的内部并且在预烧结的脱脂步骤中不易移除。可以通过在低温下加热来完全进行脱脂,但生产率显着降低。当组分在高温下过热时剩余的,诸如碳的杂质与组分元件反应以降低特性,并且劣化耐腐蚀性。\n\n【0033】\n\n[湿成型方法]\n\n提出了一种磁场中的矿物油,合成油和细粉混合物的湿式压缩模塑方法,以实现高取向,同时防止细粉末的氧化(等。2859517等)。采用喷射磨机的粉末粉末在矿物油或合成油中集成,在混合后,在模腔中填充加压喷射/压力。湿成型是在制造SR铁氧体磁体的过程中的应用,但是水用于铁氧体磁体,并且水不能在稀土磁体中使用,并且使用溶剂或油。然而,在油中,含有大量的诸如碳的组分,并且难以在烧结阶段逸出。容易蒸发,没有研究剩余的油,但难以去除捕获在固体压缩块中的碳。油在不与稀土反应的温度下蒸发并脱脂,但是对于此目的,它必须在相对低的温度下保持长时间,这显着降低了批量生产效率。如果不充分完成脱脂,则可以在高温下容易地与稀土元素反应以劣化磁性并且劣化耐腐蚀性。\n\n【0034】\n\n[氧合过程]\n\n在模具压榨方法中,细粉暴露于大气中。在制造精细粉末之后,有一个提议进行惰性气体气氛,直到从磁场压入烧结反应器(JP-A-6-108104)。然而,在实践中,必须清洁围绕模具溅出的细粉或经常更换模具。如果您离开溅出的细粉,就会在释放时非常危险。磁铁细粉需要能够量化散装大且易于制造桥梁,并且有必要定期测量并反馈成分重量。不可能是一种稀土磁铁,其使用大量的粘合剂和高压作为一般烧结产品。因此,成分容易脆。然而,由于模具压力机很大,因此它不能像手套箱一样与人类的手合作。也就是说,将包括模具压力机的整个过程放置在惰性气氛中的想法并不逼真。\n\n【0035】\n\n[维护]\n\n模具压机后的绿色压缩被输送并布置在烧结台中。压制在磁场中的压力粉是小磁体的集合,并且磁体的压力也具有磁体的性质。因此,它与猪之间的抽吸力碰撞,并且存在碎裂/裂化。因此,采用了预先将投酒花置化的方法。实际上,通过在金属模压机中添加反向磁场或交替衰减磁场来完成。在压缩状态下,由于颗粒未移动,即使添加反向磁场和交替磁场,颗粒的取向也不会受到干扰。\n\n【0036】\n\n[原因不使用细粉]\n\n如何关闭3μm细粉陷阱以减少骰子冲孔的间隙\n\n每次压缩细粉时,粉末中的细粉末都会在模具周围飞行。他们有点火和爆炸的风险。可以通过自动集尘器收集,但有必要定期清洁它。\n\n真正的RFEB烧结磁铁粉末粒度是通过激光粉末粒度分布测量装置D测量的中值粒度。50被认为是约5至10μm。 D.50已知测量将通过显微镜接近测量值的大小。 R.2Fe.14B金属间化合物的单磁性面积粒径小(0.2至0.5μm)。因此,即使在烧结磁铁的情况下,较小粉末粒度可以预期高矫顽力。然而,如图1所示。如图3所示,如图3所示,如图3所示,随着粒径降低,矫顽力随着颗粒直径而迅速降低。这表明在处理细粉的常规步骤中不能避免氧化。\n\n含有化学活性稀土元素的RFEB合金细粉末非常容易氧化和叶子在大气中。粉末粒径越小,烧制的风险越大。即使在未烧制之前,它也很容易被氧化,这在烧结磁体中作为非磁性氧化物存在,这导致特性降低。然而,在传统方法中,不可避免地暴露成型工艺和在将模塑主体进入烧结炉的过程中。\n\n现实粉碎粉末的粒径是d50约为3至5μm,如果它更细,即使是模塑体,也容易发生氧化。虽然试图将油或液体润滑剂添加到细粉末中,但试图能够具有抗氧化的协同作用,但大量的润滑剂等具有大量的粉末强度和残留碳减少磁性。也就是说,通过常规模具压力可以容易地处理3μm或更小的细粉。\n\n提出了一种组装和形成和烧结炉加载过程的方法,其中提出了在惰性气体气氛如氮气中的一体化(日本专利公开No.6-108104)。但是,在传统的模具压力机中,从质量生产率的观点来看,压机需要大小大小,并且需要清洁额外的细粉,或者更换模具,为每个产品编号大。它是不现实地覆盖整个模压机进入惰性气氛。\n\n【0037】\n\n[模具压力机]\n\n从净形状和产量的角度来看,模具压力机方法是优异的。即使在牺牲磁性的同时,确定模具压力机是模具压制方法的最大质量。从效率表面使用大压机,但由于电磁铁的磁场的条件限于压机的尺寸和形状。无法使用脉冲磁场。润滑剂需要瞄准高取向,但由于润滑剂,由于残留碳,性能降解,并且粉尘强度降低,产率劣化。定向为单向加压的颗粒受到干扰。而且,在去磁过程中取向受到干扰。在大气中安装大型压力机有各种限制,以实现完整的自动化。\n\nRFEB合金由金属间化合物组成,延展性少,韧性和字体性质,硬质易碎。因此,模具佩戴,寿命缩短。另外,由于不能使用粒状粉末,所以压循环需要缓慢,因为必须使用具有差的流动性差的细粉末或需要在压缩成型时添加外部磁场。。然而,为了有效地进行压制过程,通常压缩大尺寸的大量压力机的方法通常是压缩。然而,由于必须使磁场具有恒定强度的电磁铁,因此压机是无限的,因为模具中的磁场的均匀性,电源装置的尺寸,磁场的影响周围的工作环境。它无法完成和限制为几百吨。\n\n【0038】\n\n[本发明的目的]\n\n最初,压碎了一个大的铸锭。在铸造方法中,由于冷却速率缓慢,α-铁容易沉淀,这导致矫顽力大。为了减少α-铁的沉淀2Fe.14必须与B成分比混合大量稀土元素,并且稀土元素降低合金的饱和磁化,以减少最大能量产品。由于淬火方法(条形铸造方法)可以抑制α-铁的沉淀,因此可以减少稀土质量的配方,因此很高\n\n获得产品(日本专利公开No.2002-208509等)。然而,在这种情况下,只要采用传统的成型方法,就不能抑制成型时取向程度的降低。\n\n处理粉末的处理过程。使用该合金的储氢性能进行粗粉碎。通过将锭等合金留成氢气,将微裂化物含有。然后通过机械研磨调节粒度。在这个阶段,它的尺寸为几十到几百μm。由于在储存氢时易于点燃,因此可以进行用于脱氢​​的热处理。\n\n滚珠磨机,振动磨机喷射磨机等用于粉碎。其中,广泛使用能够获得超细粉末并获得尖锐粒度分布的细粉的喷射磨机。在喷射铣架时,在惰性氮气的高速气流中进行破碎,但为了增加金属粉末的稳定性,有意混合在空气流中少量的氧(大气),并施加氧化膜到颗粒表面。它可以形成。这种粉末相对稳定。过细的超细粉末被带到高速空气流动,并排出到破碎机(集尘器)的外部。\n\n在有机溶剂中进行球磨机和磨碎机研磨时,在有机溶剂中研磨以避免在细微粉碎期间避免氧化。超细粉末在有机溶剂中混合或碳成分保留在烧结磁体中以降低性能和耐腐蚀性。目前,喷射铣削是主流。由于通过喷射研磨获得尖锐粒度分布的细粉末,因此射流研磨方法在磁特性方面优异。\n\n尽管上面主要提到RFEB磁体上,但它在其他稀土磁铁(1-5,2-17型)中的情况完全相同,并且本发明的制造方法和制造装置也适用于钐钴磁铁。\n\n模具压榨方法·CIP·RIP本发明的目的是通过强烈的压缩压缩强烈的压缩。一个是为了便于处理,还有一个是获得足够的烧结密度。然而,压缩是对取向干扰的原因。\n\n本发明提供了一种全新的磁各向异性稀土烧结磁体的制造方法,其不包括包括各种问题和矛盾点的传统模具压制过程。\n\n早期的RFEB烧结磁铁产品的磁性等级是最大能量产品((BH)MAX)= 35 MGOE和矫顽力(IHC)= 12个KOE类,高舌磁性材料(BH)MAX = 30 MGOE矫顽力17课。高储能材料主要用于MRI器件和扬声器,其不相对接收温度等环境影响,以及从线圈接收反向磁场的电动机。本发明的目的是提供一种具有高矫顽力的RFEB烧结磁体,同时保持高最大能量产物。\n\n【0039】\n\n[获得高矫顽力]\n\nRFEB磁铁和SMCO5磁铁是单结构域颗粒磁体,并且当单结构域微粒的尺寸时,可以获得最大的矫顽力。在NDFEB磁体的情况下,单个磁性面积粒径的尺寸为约0.2至0.3μm。该细颗粒由磁场定向,并且仅在没有晶粒生长的情况下烧结时浓密且均匀的微观结构。然而,在当前的质量制造方法中,特别是使用模具压机的方法,所得烧结磁体的晶粒尺寸的大小为约5至10μm,一个大小大于理想幅度。此时使用的粉末的粒径也是d50它约为5至10μm。这被认为是由于模具压机的过程约束。换句话说,在当前的制造过程中,在从模具压机到烧结炉输送的过程中,不可避免地暴露于大气中。在模压压缩期间,细粉跳出模具间隙,并且每次将磁场施加到模具压力机上时,细粉末将被拉出到磁场上,并在数据上飞行。为了加入大量的粘合剂并预先加压以避免这种情况,如果制造了稳健的轮询粉末,则在烧结粉末的取向时,管体中牢固地包含在管体中的粘合剂部件与磁体组分反应通过减少特性或强烈加压来扰乱。\n\n因此,在传统的模具压力机法中,不可能获得理想的单结构域颗粒烧结磁体。\n\n[解决问题的手段]\n\n【0040】\n\n根据本发明的制造磁各向异性稀土烧结磁体的方法的第一方面是解决上述问题的\n\n提供取代的孔或凹槽填充容器在通过激光粉末粒度分布测量装置测量平均粒径D50小于5μm或更小NDFEB不含Dy和Tb的磁铁用高密度填充合金细粉的步骤,充电容器在填充的同时将合金细粉对准合金细粉的状态充满填料容器的合金烧结细粉和上述方法的过程是无氧或惰性气体气氛容器它的特点是与它一致。\n\n此外,通过激光粉末粒度分布测量装置在填充容器中测量的平均粒径D,其在其一部分的一部分中具有脱气的孔或凹槽50高密度填充的步骤用含有6重量%或更小的NdFeB磁体的合金细粉末,6重量%或更小,密度为46.4%至55%,填充物。对齐的步骤磁场中的合金细粉在容器中填充的状态和烧结合金细粉的步骤在填充容器中填充的状态下,上述步骤在无氧或惰性气体中大气层可以在容器中一致地完成。\n\n【0041】\n\n制造根据本发明的磁各向异性稀土烧结磁体的第二方面是\n\n提供取代的孔或凹槽填充容器在NDFEB磁铁不包含Dy和TB用高密度填充合金细粉的步骤,充电容器在填充的同时将合金细粉对准合金细粉的状态充满填料容器的合金预烧结的方法和初步烧结体,直至保持细粉。充电容器它具有去除然后烧结的步骤,上述方法是含氧或惰性气体气氛。容器它的特点是与它一致。\n\n同样,46.4%至55%,从46.4%到55%的NDFEB磁体,其中含有6重量%以下的NDFEB磁体和/或TB中的填充容器中的用脱气孔或凹槽。收藏一步一步一致的合金细粉在填充填充容器的状态的磁场中的磁场中,直到填充容器填充在磁场中的状态下。并且,可以从填充容器中除去初步烧结体,然后烧结,并且可以在具有氧气或惰性气体气氛的容器中一致地进行上述步骤。\n\n【0042】\n\n在制造第二方面的方法中,希望初步烧结的温度在500℃和10℃的温度低于烧结温度。另外,在预烧结后,可以交换一些或全部填充容器。\n\n【0043】\n\n在制造本发明的磁各向异性稀土烧结磁体的方法中,可以通过氧气或惰性气体气氛烧结细粉末的填充。\n\n【0044】\n\n在制造本发明的磁各向异性稀土烧结磁体的方法中,磁各向异性稀土烧结磁体可以是稀土铁硼磁铁或稀土钴磁铁。\n\n【0045】\n\n在制造本发明的磁各向异性稀土烧结磁体的方法中,填充容器可以是简单的或许多。填充容器可以部分或全部部分。或者,填充容器可以是其作为铁磁性材料的一部分的一部分。该铁磁材料可以在填充容器的两端具有铁磁性材料。另外,希望填充容器中的细粉在磁场中取向后均匀填充。此外,填充容器可以是净形状。\n\n【0046】\n\n在制造本发明的磁各向异性稀土烧结磁体的方法中,合金细粉的平均粒径可以为5μm或更小。平均粒径可以是2μm或更小,并且可以为1μm或更小。这里,通过激光粉末粒度分布测量装置测量的中值粒度是中值粒度(D.50)可以使用。\n\n【0047】\n\n希望将填充容器填充在40%至55%之间,填充密度的填充密度。另外,可以使用机械挖掘方法或空气挖掘方法被迫强制地强制填充填充剂容器。\n\n【0048】\n\n磁场可以是脉冲磁场。期望该脉冲磁场的强度为3个特斯拉或更多。而且,脉冲磁场可以是一个循环或更多循环的交替磁场。\n\n【0049】\n\n通过熔融金属淬火方法获得的合金可用于细粉。\n\n【0050】\n\n混合细粉末可以用润滑剂填充到填充的容器中。该润滑剂可以是液体润滑剂。该液体润滑剂可以使用脂肪酸酯或脱色聚合物作为主要成分。\n\n【0051】\n\n根据本发明的磁各向异性稀土烧结磁体制造装置的第一方面是\n\na)一种细粉末,填充有具有细粉末填充装置的合金,用于填充填充容器,\n\nb)磁场中的复用装置,\n\nc)烧结装置用于烧结细粉作为填充容器,\n\nd)用于将填充容器运送到细粉供应装置的传输装置,磁场取向装置和烧结装置,\n\ne)细粉填充装置,互连装置,烧结装置和含有运输装置的容器,\n\nf)大气调节装置,用于使氧气或惰性气体大气与容器内部,\n\n它的特征在于提供。\n\n【0052】\n\n根据本发明的磁各向异性稀土烧结磁体的制造装置的第二方面是\n\na)一种细粉末,填充有具有细粉末填充装置的合金,用于填充填充容器,\n\nb)磁场中的复用装置,\n\nc)用于预烧结直至填充容器保持的初步烧结装置\n\nd)烧结装置用于烧结预载细粉,\n\ne)用于将填料容器运送到细粉供应装置,磁场取向装置,初步烧结装置和烧结装置的公约装置,\n\nf)细粉填充装置,互连装置,初步烧结装置,烧结装置和输送装置,\n\ng)气氛调节装置具有氧气或惰性气体气氛与容器内部,\n\n它的特征在于提供。\n\n【0053】\n\n本发明的磁各向异性稀土烧结磁体的制造装置可包括容纳容器的外部容器。\n\n发明的描述\n\n【0054】\n\n根据本发明,在制造磁各向异性稀土烧结磁体的方法中,粉末填充在预定的填充容器中,预定从相同的预定尺寸和形状,从外部加入磁场以定向粉末。之后,烧结它。\n\n【0055】\n\n本发明的制备方法应用于RCO(稀土钴)磁体和RFEB(稀土,铁和硼磁铁)的制造。\n\n【0056】\n\n根据本发明,在将细粉末施加到填充容器中之后,添加磁场并在其上转移烧结过程。细粉不会飞,即使它是稀土磁铁的细粉也可以安全地处理。\n\n【0057】\n\n根据本发明,在有氧或惰性气体气氛中进行磁场的细粉填充,施加到烧结炉中的所有方法。稀土磁铁受诸如氧气的杂质的影响。需要是RFEB磁体,1-5型型SMCO磁体,并且有必要在稀土含量中选择比化学量子组成的稀土化组合物在预期稀土。然而,非磁性相增加,并且特性降低。当根据本发明的方法应用于NDFEB磁体和SMCO磁体的稀土磁体时,可以减少烧结体的氧气,因为没有机会在罚款状态下触摸大气中的氧气粉末。在这种情况下,由于预先要求稀土量的稀土量,可以降低稀土(Nd,Sm)的量,以降低到极限,并且可以获得高磁特性。由于同时没有压缩过程,因此保持高对准,并且实现了高BR和高能量产品。\n\n【0058】\n\n本发明中的填充容器设置有用于脱气的孔或凹槽。如果使用诸如氮气的惰性气体如惰性气体,则在粉末中始终存在吸附气体组分如氢气,氮气和水分。它们在烧结时在烧结时蒸发,但是当填充容器被密封时,在高温下反应性增加并与磁体组分反应。尽管可以存在多个脱气孔或凹槽,但是可以存在多个填充容器,但是存在多个脱气效果。\n\n【0059】\n\n在模具压制中,通过使模具和冲压间隙尽可能小,不可能含有3μm细粉末。尽管在JP-A-6-108104中提出了该过程,但是提出了一种从破碎,模制和烧结炉载体中组装过程的方法,例如惰性气体气氛如氮气,但从模压机排出的细粉末关闭。在太空中遏制是非常危险的。从大规模生产效率的角度来看,真正的模压不会变大,并且需要替换模具的每个产品部件号,每次都有必要时,必须清洁排出的细粉。如果细粉漂浮,大气在大气中,有火灾和爆炸的风险。因此,在大气中包含整个大型压力机的方法是不方意的。\n\n【0060】\n\n细粉填充在预定的预定尺寸和形状预定的填充容器中,并且可以从外部添加磁场以定向粉末,然后在其上进行预烧结。\n\n【0061】\n\n磁铁合金细粉填充在填充容器中。高密度填充程度高于常规模具压制,CIP方法和RIP方法的填充程度,并且低于传统模具压力机,CIP方法和RIP中压缩成型体的填充程度。方法。传统方法需要用于管道处理的鲁棒杆强度,但在本发明中,不需要压缩,因为没有管道处理步骤。\n\n【0062】\n\n填充容器中的高密度填充粉末可以均匀地填充在容器中和烧结体的足够密度以获得足够的密度。具体地,在脉冲磁场取向之后,可能不会发生粉末偏差。可以通过在烧结后烧结体横截面中的细孔存在或不存在这种状态,并且几乎没有孔隙。\n\n【0063】\n\n在本发明中使用的填充容器的一部分中设置脱气的多孔或槽是避免在烧结加热期间从粉末蒸发的气体组分在填充容器中。由于本发明的原料粉末是金属间化合物的主阶段,因此不能避免吸附气体如氢和水。当容器被密封时,气体部件可以膨胀。另外,优选添加液体润滑剂以增加本发明中的取向。液体润滑剂组分可以在高温下与磁体组分反应。它是向本发明中使用的填充容器的一部分提供脱气的多孔或槽,从防止这些气体部件停留在容器中。\n\n孔或凹槽的尺寸理想地小于由于诸如磁场脉冲等的撞击而不会跳出容器中的粉末不会跳出容器的程度。\n\n【0064】\n\n本发明的稀土磁体优选为RFEB磁体。\n\nRFEB磁体处于原子百分比,R(R是含有Y)的稀土元素中的至少一种),B2至28%,并且基本上Fe的余额。\n\n可以提高磁体的温度特性和耐腐蚀性,并且可以用CO被替代的Fe代替50%的Fe以改善微旋转稳定性。\n\n改善矫顽力,以提高烧结性和其他可制造性,Fe Ti,Ni,Bi,V,Nb,Ta,Cr,Mo,W,Mn,Al,Sb,Ge,Sn,Zr,Hr,可以更换Ga等。尽管可以添加这些添加剂元素,但在所有情况下它们优选为6原子%或更小。特别地,V和Mo是优选的。\n\n此外,R1(Dy,Tb,Gd,HO,ER,Tm,Yb)和R 2的总和(Nd / Pr的总和为80%以上,其余的是一种稀土元素,包括y除外R1)当R 1 12至20%,B 4至20%,并且其余Fe是高矫顽力,可以获得高矫顽力。\n\n在RFEB磁体的情况下,烧结在950和1200℃之间进行。\n\n【0065】\n\n本发明的稀土磁铁也可以应用于钴磁铁(RCO磁体)。\n\n在RCO磁体中,1-5型磁体的组成范围是RTX(R是SM或SM,LA,CE,PR,ND,Y,GD 1或多于两种类型,T是CO或CO一个或多个Mn,Fe,Cu,Ni或2或更多种,3.6 【0066】\n\n为了获得具有高磁性性质的磁体,希望通过烧结烧结而没有如上所述的晶粒生长来增加烧结密度并增加矫顽力。烧结密度可以足够高,最佳烧结温度可以定义为不会引起晶粒生长的烧结温度。最佳烧结温度根据磁体的组成和粉末粒径,烧结时间等而不同。\n\n【0067】\n\n在本发明中,进行预处理,直到粉末的一部分粘合并且可以储存形状。为此目的,预处理的温度可以是500℃或更高。另一方面,考虑到容器的寿命,并且预烧结的温度低于最佳烧结温度比最佳烧结温度低,预烧结的温度低于最佳烧结温度考虑容器的生命。由于填充粉末的反应性在最佳烧结温度下高,因此烘烤趋于更强。\n\n【0068】\n\nRFEB磁铁和RCO5在磁铁中,金属间化合物的平衡组成(R2Fe.14B和RCO5更高的稀土元素以上含有。它们通过与另一种组成元素的低熔点共晶组合物促进液相烧结。也就是说,液相的存在导致粉末键,然后转移到收缩阶段。预烧结在填充容器中以保持所需的形状。可以从填充容器中除去初步烧结体,并且可以使用其他烧结板等进行原始烧结。\n\n【0069】\n\n在预烧结阶段,可以在大气中取出,因为细粉不会引起氧化。此时,初步烧结体可以从填充容器转移到烧结板板等并烧结。当粉末被填充并烧结到圆柱体或环形填充容器中时,内径部分收缩以产生裂缝。在这种情况下,在预烧结之后,必须从填充容器转移到烧结容器中。另外,优选从填充容器的寿命的观点来移动和改变。\n\n【0070】\n\n最简单的填充容器是“单”,以从一个容器获得一个磁铁。\n\n然而,考虑生产力,使用“大量可能的填充”填充容器有效,该填充容器从一个填充容器获得多个磁体。\n\n虽然在传统的模具压力机中采用了大量的生产效率,但压机机必须在模具强度方面很大。根据本发明的许多件可以在相邻之间具有薄的间隔物。\n\n【0071】\n\n外部添加磁场以使填充在填充容器中的细粉。如果所有填充容器都是非磁性的,则外部磁场是优选的,因为它有效地用于磁性材料的磁体粉末。\n\n【0072】\n\n在添加外部磁场后,填充容器中的粉末是可移动的。粉末的对准可以被填料容器中的一个磁性和整个粉末中的一个的磁矩扰乱。通过将铁磁材料放置并改变填充容器的端部或侧面的磁通量的流动,可以避免在施加磁场之后粉末的湍流。\n\n【0073】\n\n当在填充容器的侧表面上使用非磁性材料时,将铁磁材料放在填充剂容器的两端,以防止粉末之后的粉末的取向。通过填充容器中的整个粉末构成的磁场的量减小,并且可以改变磁通量以减小磁场对粉末上的影响。\n\n【0074】\n\n通过储存填充容器的形状,填充容器中的粉末。因此,如果预先确定烧结引起的收缩率,则可以通过后退计算获得目标尺寸形状的烧结体。\n\n【0075】\n\n销售的实际钕磁体烧结体的晶粒尺寸的大小为5至10μm,烧结前的细粉的粒径为D.50是3至5μm。这里50并且,示出了通过激光型粒度分布测量仪器等测量的中值粒度分布。已经使用的透气性粒度分布测量仪(沉敷Sizer,F.S.)的测量值为3μm的细颗粒的粒径。50它显示为4至5μm。 F.S.S.S.方法不适合测量高粘合和化学活性稀土合金粉末。\n\n在含有30%或更多重量的稀土元素的稀土磁铁合金组合物中,常规模具压力机法50难以处理低于5μm的细粉末(F.S.S. S. S. S. S.S.S.。\n\n在本发明中,将细粉末填充在惰性气氛中的填充容器中,例如氧气或氮气,并且由磁场定向,并且不是触摸空气的过程,因为它被送入烧结时炉子,即使是粉末也很好。处理中没有危险。\n\n【0076】\n\n在含有30重量%或更多的稀土元素的稀土磁铁合金组合物中,传统的模具压力机50处理2μm或更小的细粉末是不可能的。\n\nRFEB磁体是单结构域颗粒类型,单结构域颗粒的尺寸约为0.2至0.3微米。然而,实际RFEB烧结磁体的晶体粒径为约5至10μm,烧结前的细粉的粒径为D.50使用约4至5μm如果晶体粒径是单磁性面积颗粒的尺寸,则可以获得大的矫顽力。然而,为了实现它,必须使用较小的细粉末。在处理含有大量化学活性稀土元素的RFEB磁铁合金细粉末中,通过气氛中含有的氧气和水分的影响,传统的模压,CIP和RIP生产过程是不可能的。如果将RFEB合金粉末的小粒径暴露于大气中,则烧制和爆炸的可能性变高,不能产生稳定的生产。如果细粉末具有大的表面积,则细粉末增加,并且由于大的表面积而导致磁性降低。与粘合剂,润滑剂和湿式压机中使用的化学物质相结合以避免抗氧化,因此化学物质的组分与粉末组分反应,因为细粉的表面积大或烧结在烧结过程之前的过程劣化,在脱脂过程中根据需要降低磁性。由于传统方法中无法避免这些效果,因此\n\n不可能处理细粉末。\n\n根据本发明50当使用值为2μm或更小的RFEB合金粉末获得烧结磁体时,能量产品高取向,获得高矫顽力。\n\n【0077】\n\n例如,在最高的矫顽材料类((BH)MAX = 32MGOE(255 kJ / m3)中,IHC = 30 koe(2387ka / m)),重稀土元素如dy,tb等重量已知通过使用ND来使用它。如果添加DY或TB,2Fe.14B增强了金属间化合物的各向异性能量以增加磁体的矫顽力。诸如DY和TB等重型稀土元素的地壳丰度小于ND,价格昂贵,并将大量重质稀土元素添加到饱和磁化强度下降。因此,不可能涵盖对电动汽车,混合动力汽车,房屋电气和工业电机的需求和TB。\n\n根据本发明,可以获得等于或大于略微数量的矫顽力,或者甚至不是在所有且昂贵的DY或Tb中使用的略微数量。\n\n【0078】\n\n本发明的一个特征是,没有必要在像模压,CIP和RIP上的大压力下加压。填充容器中的粉末取向粉末不采用力,使得通过增加压力也受到扰乱,并且在保持时烧结高取向。由于高取向度,实现了高剩余磁通密度(BR)和高最大能量产品((BH)MAX)。\n\n【0079】\n\n在传统方法中50没有手段处理含稀土的磁体粉末,其值为1μm或更小。发明内容提出了一种稀土磁体的制造装置,其中所有磨削处理装置,形成工艺装置和烧结处理装置在惰性气氛下处理。\n\n根据该方法,通过模具压力机模制的细粉,通过输送路径达到烧结炉入口。然而,在模具压力机中,机会暴露于大气中,例如清洁从模具的间隙泄漏的细粉和部件数变化时的模具交换。如果是使用常规模压机的方法,则必须除去粒径为1μm或更小的细粉,例如,如JP-A-2002-208509中所述。\n\n根据本发明,可以在完全含氧或惰性气氛中加工细粉产生和后烧结后的方法,D50可以安全地处理具有1μm或更小的含有值1μm或更小的含稀土的磁体粉末,并且可以获得具有高矫顽力的磁体。\n\n【0080】\n\n由于RFEB磁体是单结构域细颗粒类型,因此单结构域粒径为约0.2至0.3μm,因此烧结体粒尺寸也优选接近该。为此目的,粉末粒径必须为0.5μm或更小。在传统方法中50没有手段处理含稀土的磁体粉末,其值为0.5μm或更小。根据本发明,可以在完全含氧或惰性气氛中加工细粉产生和后烧结后的方法,D50可以安全地处理值0.5μm或更小的含稀土磁体粉末。\n\n【0081】\n\n通过将溶解在混合组合物中的模塑锭或淬火方法(带浇铸法)(带浇铸法)来获得磁体合金粉末。为了获得几微米的细粉末,通常分为粗碎和粉碎。粗磨是一种机械压碎的方法,以及在氢气中挤压氢气(氢破碎方法),并且经常使用,因为氢破碎方法具有优异的生产率。将稀土氧化物,铁粉,铁硼酮粉末混合并搅拌加热,还有一种直接获得RFEB金属间化合物的粉末的方法(还原扩散方法)。作为铣削方法,使用球磨机,由金属磨机,磨损器和诸如氮的气流的方法进行粉碎的喷射磨削方法。尽管本发明的特征在于使用具有少微米或更小的细粉末,但是对获得细粉末的方法没有限制,并且可以是除上述之外的方法。\n\n然而,由于粉末太小,所示的分类装置的研磨方法是优选避免这种超细粉末的磨削方法。\n\n【0082】\n\n在本发明中填充容器中粉末的填充密度优选为40%和55%相对于真密度。\n\n常规方法(模具压制,CIP,RIP)需要稳健的管道以处理导致后续过程。因此,需要更强的加压力来实现获得足够磁性所需的烧结密度。\n\n也就是说,从压力和粉末强度进行处理的观点来获得常规方法中的压力粉末密度,并且为了获得所需的磁性烧结密度,比它所有的常规方法更多小包装密度。\n\n在本发明中,不需要考虑压力和粉末强度,例如常规方法,因为没有食用式处理过程。\n\n【0083】\n\n优选使用机械挖掘方法或空气挖掘方法(JP-A-2000-96104)进行粉末填充。微米单元磁体粉末可能会聚集,并且当填充容器时,通过形成桥和均匀的填充,易于形成。使用机械挖掘方法或空气挖掘方法,可以通过向粉末进料器中的粉末施加周期性机械冲击或空气冲击来均匀地量化粉末。\n\n通过加入方法在模具中填充通过加入粘合剂而获得的日本专利公开No.2000-96104,通过加热固化粘合剂,并将粉末合并,得到模制体然后获得模制体。描述了一种烧结方法。然而,本发明不是与磁体有关的方法,并且由于磁场而没有取向,并且不存在作为填充容器的烧结(或预烧结)。在本发明中,不使用用于获得粉末成型体的粘合剂,并且不需要处理它。\n\n【0084】\n\n用于粉末方向的外部磁场产生源优选地是脉冲磁场。脉冲磁场放置并添加在血管线圈中。虽然使用模具压力机中使用的电磁铁的静磁场系统是脉冲磁场法中的高磁场强度,而它是1.5 t(15只koe)。本发明中的脉冲磁场的大小优选为3吨或更大,更优选为5吨以上。另外,用于对准粉末的脉冲磁场优选地是一种方法,例如预先增加交替或石英型的波形磁场,然后添加DC脉冲磁场。\n\n专利No.3,307,418提供了在制造RFEB磁体中的15至50只koe的磁场,并且确认了磁特性的改善。然而,在传统的模具压力机法中,组合使用脉冲磁场。当将脉冲磁场添加到模压机上时,在模具中发生涡流损耗或磁滞损耗,并且不能连续使用。另外,由于脉冲磁场的冲击力施加到模具上,所以模具可能被损坏。\n\n本发明中的磁场需要是强磁场,而是可以是由除脉冲磁场之外的超导线圈等的强磁场。\n\n在常规方法中,在模制磁场之后需要去磁过程。如果没有敏化,则在处理时,成分在处理时彼此碰撞,并且在绿色紧凑型中发生管道等。通过添加逆磁场或衰减的交替磁场来执行延展,但是反向磁场和衰减交流场干扰粉末粉末的取向。根据本发明,取向不会受到干扰,因为不需要去磁过程。\n\n【0085】\n\n具有优异磁性的稀土烧结磁体需要致密和均匀的微观结构。为了获得这种烧结体,已经提出了一种用于获得精细和致密合金锭的方法(专利2665590等)。然而,在日本专利。美国专利No.26,655,90中,条带铸板的平均晶粒尺寸为3至20μm。由于本发明的烧结磁体需要较小的晶粒尺寸,因此条带铸造合金的3μm或更小的平均晶粒尺寸优选为3μm或更小,更优选为1μm或更小。\n\n【0086】\n\n在本发明中,从精细粉末的提取到烧结炉的所有步骤是氧气或\n\n在惰性气氛中完成。放置在料斗中的细粉末填充在填充容器中,通过高密度灌装装置,例如机械敲击和空气攻丝,并且盖子盖在磁场中。移动到放置在哪里提供了这种手段。其中粉末通过诸如脉冲磁场的磁场中的对准装置定向的填充容器被输送到烧结炉入口。\n\n【0087】\n\n通过预先填充填充的容器,是为了提前填充填充容器的优选方法,以便于磁场中的取向。\n\n通常,固体润滑剂具有低蒸气压和高沸点,但液体润滑剂具有高蒸气压和低沸点。液体润滑剂很好,考虑到易于扩散到整个细粉末。\n\n【0088】\n\n众所周知,甲基己酸和甲基纤维素与饱和脂肪酸一起使用,作为液体润滑剂(JP 2000-109903)。但是,在模具压榨方法中使用这些润滑剂时,只能使用少量0.005至0.5%,以重量比使用。它们的特征在于挥发性并且不保留在烧结体中,但是当烧结模压中模压的压缩模制压缩时,捕获管内的润滑剂组分难以去除,并且在高温下,润滑剂组分和润滑剂组分磁体组分可以反应以降低磁性。\n\n在本发明中,填充容器中的粉末未被压缩,并且润滑剂组分被气化并且容易移除。因此,优选使用本发明的液体润滑剂的量。然而,如果它太大,则存在高密度填充的风险。所添加的液体润滑剂的添加量为0.5至1%。\n\n本发明的液体润滑剂可以润滑,可以容易地挥发,辛酸甲酯,二甘醇甲酯,甲基甲酸甲酯,甲基甲酸甲酯,甲基亲子酸,甲基豆蔻酸甲酯,甲基羟基酯,甲基丙酰酯,甲基棕榈酸甲酯,甲基棕榈酸甲酯。它可以使用。\n\n【0089】\n\n[本发明的效果]\n\n已经发现了本发明作为解决诸如RFEB磁体和RCO磁体的磁极磁体的磁各向异性烧结磁体中的常规方法的问题和矛盾的方法。也就是说,根据本发明,它不需要诸如模具压力机的大规模成型装置,并且不需要制造用于处理的强大的人气粉末,因此没有方向和形状的扰动。沿着填充容器形状的形状,获得磁各向异性烧结磁体。强脉冲磁场可以由空环形线圈提供,并且可以获得具有高取向的烧结体,因为没有劣化的压力粉末的步骤。另外,由于可以在不接触气氛的情况下处理含有稀土元素的化学活性细粉末,因此可以处理小的粒度粉末,并且在不使用Tb和Dy的情况下获得高矫顽力的稀土磁体。\n\n【例子】\n\n【0090】\n\n[填充容器]\n\n填充容器优选是承受烧结温度(-1100℃)的高温的材料。在预先提高填充粉末的过程中,部分或全部填充容器可以在可以形成颗粒的键合和形成的状态下转移到另一个容器中。由于预测的温度理想地在500℃和10℃之间低于烧结温度,因此在预烧结时使用的填充容器可以是能够承受该温度的材料。\n\n对于填料容器的材料,使用陶瓷,如铁,铁合金,不锈钢,渗透合金,耐热合金,铁氧体或氧化铝。为了防止在添加脉冲磁场后颗粒对准,可以在填充容器的两端和侧表面上使用铁基磁体。当分别进行初步烧结和烧结过程时,用于烧结步骤的底板可以传统地使用耐热合金,氧化物等。\n\n【0091】\n\n[容器内壁涂层]\n\n预先将分离剂如BN(氮化硼)施加到填充剂容器的内部,以避免在烧结时熔化烧结和容器的熔化。通过将BN施加到容器的内壁,通过热喷涂喷射高熔点金属等,例如Mo或W,以在内壁中形成这些薄膜,并且烧结体在内部粘附到容器内部烧结。生产高质量的烧结磁铁是有效的,因为它可以防止烧结体变形或断裂到其粘附性。\n\n【0092】\n\n[填充方法]\n\n在本发明中,填充方法是重要的。非粒状的永磁合金细粉体易于聚集,因为它具有磁体的性质,并且难以形成桥梁并定量填充容器。使用的强制填充,例如,使用本发明的发明人的机械挖掘方法,空气挖掘方法(JP-A-2000-96104)。也可以使用用于MIM的湿成型和高压填充方法。\n\n【0093】\n\n[填充密度]\n\n填充密度是合金真实密度的40%至55%的高密度填充范围。如果它为40%或更少,则不能获得均匀的烧结体,因为不能获得均匀的填充物。为了避免部分多孔或变形,填充密度需要超过40%。如果超过55%,则需要传统的压缩模塑方法,超出根据本发明的强制填充范围。另外,为了在填充后添加磁场,不能获得足够的取向,其填充率为55%以上。本发明的一个目的是通过压缩去除取向的干扰。在RFEB磁体粉末的情况下,更优选的填充密度范围为44至53%,其中可以获得足够的取向和足够的烧结密度。\n\n【0094】\n\n填充容器使用根据各个形状的单面容器,如图2所示。如图2所示的大量容器。2可用于提高效率。每个腔的隔板可以是可移除的薄隔板(例如,图2(3)的分区21)。在使用细粉末的本发明的烧结过程中,粘合容器边界表面附近的颗粒,并且存储所需的形状,并且在换档与温度进行后。因此,预先准备了从收缩速率的预定形状的预定形状填充容器,并且可以进行预定的强制填充以获得均匀和预定的形状烧结体。\n\n【0095】\n\n由图1的填充剂制造的穿孔圆柱形磁体。通过常规模具压机法加入常规模压机时,才能实现图1(3)或(4)。然而,在平行磁场类型中,磁性是低的,并且需要正交压力机或更高的磁性。将金属棒安装在橡胶容器的中心,并在添加脉冲磁场后,尝试使用CIP或RIP压缩方法,但净成型差,批量生产效率低。在根据本发明的制造方法中,细粉末可以放置在填充容器中并在脉冲取向之后烧结。由于在内径部分中发生收缩,因此从图3的填充容器中移除它。在初步烧结阶段保持的状态下,可以将其转移到另一个烧结容器中。\n\n【0096】\n\n尽管可以制备靠近最终形状的形状(净形状)的大量填充容器,但是重复使用容器来增加容器的寿命,并且优选在初步的末端转移容器烧结。在这种情况下,可以将填充到预烧结的粉末可以放置容器,并且随后的烧结可以放置在另一个容器或常规烧结板上。在这种情况下,由于初步烧结温度高于RFEB磁体的居里温度(〜310℃),因此不再磁化,并且不需要在烧结板上的布置中使用神经。\n\n【0097】\n\n图。图1(2)示出了大块的示例。根据传统的模具压力机方法,可以根据本发明促进由于压力压力极限和均匀磁场区域的极限而困难的幅度。\n\n图。图2(3)示出了由薄隔板分开的填充容器。许多人可以在这个容器中拍摄\n\n是。\n\n图。图2(4)示出了在电动机等中使用的段磁体的情况。可以以常规模具压机方法的形式促进本发明。分区部分可以如图2(3)所示。\n\n【0098】\n\n[盖]\n\n如图2中所述,将细粉末填充在填充容器中。1或图1。如图1所示。如图2所示,用盖子密封,如图2所示。盖子的目的是防止粉末散射而不密封。盖子通常设置有一个或多个用于润滑剂的脱气孔,以在端面或侧面上蒸发。盖子是一种轻轻按压的方法。由于可以在封闭系统中完成,因此容器不会在氧气等的影响下恶化。由于氧气的影响可以被封闭,因此没有必要选择稀土元素的稀土元素的组成,从而可以最小化稀土元素和容器组分的反应。\n\n脱气孔的大小可以是直径的几毫米或小于1mm。可以在观察脱气状态的同时调节脱气孔的尺寸和数量。\n\n容器和盖子可以反复使用。盖子可以轻轻浇注。由于它是固定盖子的物体,因此可以拧紧或螺钉。可以将去除手柄等提供给盖子的一部分,以便在烧结之后容易地去除。\n\n【0099】\n\n[稀土磁铁]\n\n在本发明中,R(R被施加到制造含有含有Y的稀土元素中的至少一种的稀土磁铁的方法。\n\n稀土磁体的组成没有特别限制,并且可以含有稀土元素和过渡元件,但特别是本发明特别地,特别地,基于RFEB的烧结磁铁(Fe的一部分可以由CO。)或合适的用于生产RCO的烧结磁铁。\n\n基于RFEB的稀土磁体的组成通常优选为27至38重量%,Fe51至72%,B0.5至4.5重量%。如果R含量太小,则不能获得富含铁的相沉淀物,并且不能获得高磁力,如果R含量太大,则剩余磁通密度降低。\n\n稀土元素R包括Y,La,Ce,Pr,Nd,欧盟,Gd,Tb,Dy,Ho,Tm,Yb,Lu等,特别优选包括Nd和/或Pr。 。此外,如果R酸镝或重稀土元素的铽(TB)取代的一部分,则获得高矫顽力。然而,由于如果替换重稀土元素的替代成分过大,则重质稀土元素的取代量优选为6重量%以下。如果B含量太小,则不能获得高磁力,如果B含量太大,则不能获得高剩余磁通密度。当用CO代替FE的一部分时,随着取代量的降低而降低矫顽力,因此CO的量是30重量%或更低的优选范围。此外,添加诸如Al,Cu,Nb,Cr,Mn,Mg,Si,C,Sn,W,V,Zr,Ti,Mo,Ga以提高矫顽力和烧结性的元素。虽然可能是优选的,因为残留物当添加量的总量超过5重量%时,磁通量密度降低。\n\n除了这些元素之外,除了这些元素之外,还可以包含碳和氧作为制造不可避免的杂质或痕量添加剂。\n\n具有这种组合物的磁体合金基本上具有四边形晶体结构的主要相。另外,通常,包含体积比的非磁性阶段约0.1至10%。\n\n制造磁体粉末的方法没有特别限制,但通常,粉末铸锭通常是铸造的,并且通过粉碎和制造通过还原扩散方法获得的合金粉末制备。\n\n基于RCO的稀土磁铁含有从Fe,Ni,Mn和Cr,Co 2中选择的R,1或更多金属。在这种情况下,优选地,一种或多种选自Cu或Nb,Zr,Ta,Hf,Ti和V的金属,特别优选除了上述外,还优选除了Cu和Nb,Zr,Ta,Hf,Ti和V含有从Ti和V中选择的一种或多种金属。其中,特别是具有SM和CO,优选SMCO的金属间化合物5或者sm.2CO.17优选地,金属间化合物是主相,并且该主相基本上是六边形或菱形晶体结构。具体组合\n\nIt is sufficient to select suitably according to the manufacturing method and the required magnetic characteristics, etc., but for example, the following composition is preferable.\n\nR:20-30重量%,特别是22-28重量%,Fe,Ni,Mn和Cr 1-35重量%,1至35重量%,Nb,Zr,Ta,Hf,Ti和V 1或更长时间:06重量%,尤其是0.5至4重量%,Cu:0至10重量%,特别是1至10重量%,CO:平衡。\n\n稀土元素的具体实例包括例如Y,La,Ce,Pr,Nb,Sm,Eu,Gd,Tb,Dy,Ho,ER,Tm,Yb,Lu,特别是Sm优选地和/或Ce已经包括了。\n\n此外,作为Fe,Ni,Mn和Cr,Fe中的一种或多种优选,特别是,根据需要含有一种或多种Ni,Mn和Cr。\n\n此外,作为Nb,Zr,Ta,Hf,Ti和V,Zr中的一种或多种,​​特别是如果需要,优选包括Nb,Ta,Hf,Ti和V中的一种或多种,​​包括zr。\n\n此外,除了根据需要的元素之外,还可以将诸如Si,Mo,Ca,O,C等的一种或多种其他元素添加至约3重量%或更小。这些可以包含为约3重量%或更小的杂质。\n\n制备R-Co基磁粉的方法没有特别限制。\n\n【0100】\n\n[条形铸]\n\n在由条带铸造方法产生的RFEB合金中(PAT。美国专利号26,655,90等),几乎没有αfe沉积,其由于淬火方法而导致的磁性。选择稀土侧侧的组合物以防止其,并且过量的稀土元素是非磁性的并且导致磁特性降低。带钢铸造方法制成的合金可以最小化稀土量,实现RFEB磁体的高特色。然而,在模压机中,对于少数稀土元素暴露于大气是必不可少的,存在限制。在本发明的制造方法中,没有将细粉末暴露于大气的步骤,并且可以获得高磁性,同时最小化稀土量。在本发明中,特别是当粉末粒径减小时,进行凝固速度和凝固后的冷却速率,使得柱状晶体晶体的柱状晶体晶体的结构(富含Nd的距离)很好。优选调节。\n\n【0101】\n\n[粉末粒径]\n\n在RFEB磁体的情况下,磁体细粉的平均粒径为0.5至5μm。在常规方法中,由于不避免将细粉或投刷仪暴露于大气的过程,因此不能使用3μm或更小的细粉末。根据本发明,由于细粉未暴露于大气,因此可以使用具有2μm或更小的粉末。由于RFEB型磁体的单结构域粒径的大小为0.2至0.3μm,因此希望烧结体的晶粒尺寸务必获得高矫顽力。为了实现它,希望制造细颗粒尺寸和细粉末。\n\n细粉的粒度曾经由Fisher的亚筛Sizer(Sub-Sieveizer:F.S.S.S.)使用(例如,JP-A-59-163802)使用。然而,目前,激光型粒度分布测量装置变得常见,并且由R50的值定义,该值表示中值粒度分布。 F.表明,例如3μm的粉末是D.50已知,5至6μm显示为5至6μm,测量值的差异为1.5和2次。因此,本发明中的3μm是指常规的F.S.S.S.S.S.S.S.S.S.S.S.S.S.S.粒度不同于3μm的测量。\n\n优选在本发明中粉末粒径的大小是50在RFEB磁体的情况下,它为5μm或更小。优选的尺寸为3μm或更小,以获得大的矫顽力。优选的尺寸为2μm或更小,因为本发明的方法在完整的封闭系统中进行。此外,最佳尺寸为1μm或更小,以获得RFEB金属间化合物的单结构域粒径尺寸的晶粒尺寸。\n\n在RCO磁体的情况下,优选的粉末粒径的尺寸为1-5和2-17型形式为1至5μm。\n\n【0102】\n\n[润滑剂]\n\n在本发明中,润滑剂是有效的。为了在烧结后获得足够的密度,有必要在填充容器中强制地填充细粉末。由于细粉的堆积密度小,细粉形成桥,因此它不能仅通过自由落下来填充预定目的。在这种情况下,在取向时存在柔性摩擦,并且可以防止取向。在常规方法中,添加润滑剂的添加必须最小化用于降低投票强度的量。在本发明中,由于没有处理步骤,因此可以使用充分用于取向的润滑剂。\n\n用于稀土磁体的润滑剂包括固体润滑剂和液体润滑剂。固体润滑剂在硬脂酸润滑剂如锌硬脂酸锌和硬脂酸钙中是众所周知的,并且被广泛使用,因为它们具有足够的润滑效果。然而,在固体润滑剂中,它不充分地超出脱脂步骤,并且由于碳很可能留下该特性。近年来,施加液体润滑剂,如硼酸酯,甲基己酸和甲基癸酸。在液体润滑剂的情况下,已知蒸汽压力高,沸点低,因此已知在脱脂步骤中容易蒸发,而不是太多碳。在本发明的方法中,将粉末和润滑剂混合在封闭的容器中,但是从容器中提供的小脱气孔蒸发的那些是理想的,并且液体润滑剂良好。在烧结之前的脱脂步骤中,由于温度真空或减压状态升高,因此蒸气压高,沸点低,因此需要液体润滑剂。\n\n液体润滑剂包括脂肪酸酯类润滑剂(月桂酸酯润滑剂,甲基丙酸,甲基癸酸,甲基癸酸,辛基盐,羟基甲酸甲酯,蒸气液,蒸气压,蒸气压等高沸腾的润滑剂,如甲基yristate ,甲基棕榈酸,硬脂酸甲酯)。\n\n添加润滑剂的目的是在取向时减少粉末的摩擦,并且在本发明中,由于粉末体的强度不需要,因此可以添加足够的润滑效果。添加方法可以用细粉末和预定量的润滑剂与锁定混合器等混合。\n\n【0103】\n\n[脉冲磁场]\n\n收集在填充容器中的粉末以所需的磁场定向。在本发明中,不需要用于处理模具压制,CIP和RIP方法所需的去磁过程。\n\n磁场优选较强。在模具压机中使用的电磁方法中,不能获得模具材料的饱和磁化强度的磁场,并且仅1.5特斯拉是极限。还有一个提议将强脉冲磁场施加到模压机上,但由于滞后损失和涡流损失引起的温度升高,因此不实用,因此将缩短到精确的压力机。本发明中的脉冲磁场由放置在连续装置中的空环形线圈提供,其中填充有粉末的填充容器。\n\n在空环形线圈中,通常获得三个特斯拉或更多的磁场。定向的磁场优选更强。然而,实际上,电源的强度和线圈的强度和连续使用的频率是有限的。考虑到这些的优选磁场强度是大于5特斯拉。在传统示例中,已经通过安装在模压机中的线圈提出施加脉冲磁场的方法。但是,在模具压制中,存在温度升高或冲击力,因此不能连续使用。根据本发明的脉冲磁场是空线圈类型。另外,在模具压机的情况下,通过模具存在,线圈直径存在限制。本发明中的飞机线圈可以是较小的直径,因为填充容器可以尺寸尺寸进入。在相同安培转动的情况下,内径越小,磁场强度越大,所以它是现实的,因为电源或线圈在空环的情况下不负担。在本发明中的线圈。\n\n由脉冲磁场定向的填充容器中的细粉末被输送到是图5的烧结步骤的脱脂步骤。如图5所示,在没有去磁的情况下。由于根据本发明的方法是没有机会接触氧的封闭系统,因此希望烧结炉是连续的加工炉。然而,还可以将密封容器放置在填充有惰性气体的传送室中,并将填充容器放置在设置在烧结反应器前室中的大气室中的烧结桌板上。\n\n【0104】\n\n[预烧结]\n\n在烧结的前室中,温度在真空或惰性气体真空气氛下升高。如果使用润滑剂,则在该阶段脱脂。在具有传统模具的压缩管的情况下,CIP和RIP的压缩管道,在压力粉末内限制的润滑剂组件不能容易地偏离,而是在本发明中,在没有压缩过程的情况下填充粉末案例,通过填充容器中设置的脱气脱气孔容易地蒸发填料组分。\n\n【0105】\n\n在环等的情况下,烧结时的烧结可能导致烧结时的内径部分的收缩。在这种情况下,它可以在500℃至1000℃下预烧结,并且颗粒在收缩开始时从填充容器中轻轻耦合并除去,并且可以更换容器。在低于500℃的温度下当发生这种裂化时,烧结温度超过1010℃的温度(温度低于10℃的温度低于烧结温度为1000℃),以及上限的温度初步烧结为1000°C.更优选的温度范围为600-800℃,以避免颗粒的结合和收缩。\n\n【0106】\n\n在RFEB磁体的情况下,烧结温度优选在还原或非氧化气氛的情况下,优选900℃至1200℃的范围。更优选地,1000℃至1150℃的范围以获得更高的磁性。\n\n在2-17 RCO磁体的情况下,在1,100至1,250℃下烧结,随后在0至50℃的温度下稀释。烧结和溶液所需的时间适合0.5至5小时。最后,作为老化过程,第一阶段老化通常在700至950℃下保持一段时间,然后进行连续冷却或多级老化。每个上述过程2CO.17当系统合金被氧化时,该特性的劣化是显着的,因此它在真空或非氧化气氛中进行以防止这种情况。\n\n用于1-5型RCO磁铁,对稀土富侧的组合物合金是F.S. S. S. S. S. S. S. S. S. S. S. S. S. S.50将碎粉倒入约5μm)中的填充容器和烧结。烧结温度为约1100℃至1250℃。有必要淬火约800℃。\n\n【0107】\n\n[制造设备]\n\n将参考图1和图2描述本实施例的制造装置。4和5。\n\n如图1所示。如图4所示,整个装置(下文中称为系统)被分隔壁40围绕,并且由隔板40包围的区域是Ar气体和n2它充满了惰性气体,例如气体。如图1所示。如图4所示,该系统通过敲击和磁场对准单元43对粉末称重/填充单元41,高密度单元42进行烧结炉44。在这些步骤中的每一个期间,容器46和包装在容器中的粉末被传送器45间歇地承载,并且在每个阶段执行预定的处理。\n\n在称重/填充单元41中,将固定量的粉末与振动器从料斗47供应到容器46。在该阶段,粉末填充密度接近自然填充密度,因此堆积密度小,并且引导件48附接到容器46的顶部,以保持在容器46中的预定量的粉末。\n\n在下一个高密度单元42中,盖子49施加到容器顶部的粉末的上表面,并且如图4所示,在压制时驱动容器下部的攻丝装置52由压缸50的按压杆51的盖子49。进行粉末的密度。敲击装置是振动器,其间歇地向容器中向下加速向下加速。容器46中的粉末从容器上端(引导下端)向下压下,并且盖49安装在容器的上表面上。此后,从容器46移除敲击时的支架53和引导件48,并且粉末和容器46在粉末填充高密度的状态下通过传送器输送到磁场对准阶段。\n\n在磁场对准单元43中,粉末填充的容器46沿预定方向引导,并且安装在预定位置(线圈的中心部分),并且将安装在舱壁40外部的线圈54被脉冲。\n\n流动流动。容器中的粉末通过由此产生的脉冲磁场以预定方向定向。在粉末取向之后,将粉末填充的容器46输送并进入烧结炉。\n\n【0108】\n\n本系统的特点是,由于粉末在容器中携带,因此粉末易于处理(输送或运输),并且需要机器人和手动操作(人手),使自动化,模具的复杂运动进行复杂的运动为了强调和显示巨大的压力装置,例如在压力机等中使用的10t至200t的总压力等,它由Bulkage壁40完全包围,因为重点是图4。在本发明的顺序中,粉末粒径最终是d50由于它变为1μm和2μm,安全是一个非常重要的因素。这是因为当孔在隔膜或破裂中打开或破裂时,也可以想到爆炸整个系统。从这种意义上讲,在本发明的系统中,如图2所示。如图5所示,外分隔板55可以安装在图5所示的隔板40的外部。4采取双工安全措施。此时,在外部分隔壁和内部隔断之间满足惰性气体。以这种方式,即使在填充,敲击和磁场对准过程中可以破坏分隔壁,外部隔壁也可以防止空气渗透,因此粉末燃烧并担心爆炸。没有。这种系统可以说是故障安全系统。\n\n【0109】\n\n接下来,将描述在该实施例中进行的实验。\n\n[实验1]\n\nNd = 31.5重量%,B = 0.97%,Co = 0.92重量%,Cu = 0.10重量%,Al = 0.26%,残留Fe,剩余部分Fe,剩余的Fe,剩余的Fe,剩余部分Fe,其余部分Fe,其余的剩余部分。在粉碎5至10毫米的薄片中粉碎这种合金后,氢气压碎和喷射磨机50=4.9μm的细粉末获得。在研磨过程中,氧浓度为0.1%以下,并且尽可能抑制细粉末中含有的含氧量。在喷射研磨后,向粉末加入0.2重量%的0.2%重量的甲基,并用混合器搅拌。\n\n不锈钢管的粉末填充密度为3.0,3.2,3.4,3.6,3.8,4.0g / cm,内径为10 mm,外径为12毫米,外径为12毫米,长度为30毫米。3由不锈钢制成的盖子连接到管道的两端。将脉冲磁场施加到在与管道的轴线平行的方向上堆叠在不锈钢管中的NDFEB磁体粉末。脉冲磁场的强度的峰值为8t,并且在达到8t的峰值之后,衰减的交流交替衰减磁场(下文中称为交流脉冲)和8t的峰值值,然后衰减改变磁场方向。使用脉冲磁场的两个脉冲磁场(下文中称为DC脉冲)。在本实施例中,峰值8T的脉冲磁场以AC,DC和DC的顺序施加到不锈钢管。在磁场施加之后,将填充有磁体粉末的不锈钢管置于烧结炉中并在1050℃下烧结1小时。在该实验中,粉末填充,脉冲磁场取向,充电到烧结炉,所有在惰性气体中的所有运输在惰性气体中进行,并且通过粉碎烧结,磁体粉末未暴露于空气。烧结后,当从不锈钢管中取出烧结体时,粉末填充密度与不锈钢管的密度为3.0g / cm。33.2克/厘米3对于烧结体的那些,制造许多像巢一样的空腔,但填充密度为3.4g / cm3除了盖子外,除了盖子外,腔外不会产生,3.6克/厘米3如上所述,腔体不是很少产生的,并且证实形成高密度烧结体。将烧结体加工成直径为7mm的圆柱,高度为7mm,并且施加最大磁场8t的脉冲磁场以进行磁测量。确定了脉冲磁场施加在8℃下磁化为磁化值的残余磁化比率,测量烧结体中的取向程度。结果,包装密度= 3.6克/厘米3烧结体的取向程度由97.0%,3.8g / cm产生396.0%的取向度约为96.0%。为了比较,由模具磁场模塑方法生产的烧结体作为常规方法的取向程度为95.6%。\n\n【0110】\n\n[实验2]\n\n粉末灌装容器的材料(饱和磁化JS)用与实验1相同的粉末填充容器的形状\n\n检查密度的差异。容器腔的尺寸(填充有粉末的空间)是直径为25mm,厚度为7mm的扁平圆柱形状,并且容器材料是铁(JS = 2.15t),Permoloy(JS = 1.4 T,1.35T,0.73 T,0.65T,0.50t)和非磁性不锈钢。这些容器壁的厚度全部为1mm。\n\n粉末填充有这些空腔3.8克/厘米3将磁场填充为实验1,并且将与实验1中的相同的AC→DC→DC(峰值磁场8t)施加到粉末中以定向该粉末,然后烧结粉末。同样在实验2中,如在实验1中,粉末给出了烧结体,使得在所有方法中没有触及空气。烧结条件也与实验1相同。烧结后,将烧结体从容器中除去。结果,发现烧结体的形状由容器材料显着变化。由最大JS在中心具有大于3mm的孔的铁容器产生的烧结体,并且从该孔周围取出直径为约0.5mm的柱状体,并且进一步增加孔。作为容器材料,即使具有JS的钙合作为1.35吨以上,它也不像铁容器一样,但是相似的趋势。此外,对于不锈钢容器,发现烧结密度通过烧结破坏下的烧结失败(在该部分浸没水中的现象)降低了烧结失效。并且没有缺陷,并且形状良好,它是使用具有JS = 0.5-0.73t的渗透合金容器制造的烧结体。其中,在js = 0.73t处由渗透合金容器产生的烧结体并不完全缺陷,而形状也是最好的。由此,据了解,用于本发明中使用的用于粉末填充容器的材料不是太大的JS,并且它不是太小,并且JS = 0.3至1T,优选JS = 0.5至0.8T是最佳的。稻田。该最佳JS的值也与粉末填充密度和粉末的磁化,以及容器材料(粉末磁化)×(粉末的粉末)的JS(粉末的粉末)是相关的最佳微积分证明可以获得一致。已经发现,当腔体形状和烧结后的烧结体形状平坦时,这种容器材料通过这种容器材料的烧结体形状的差异显然出现。\n\n【0111】\n\n[实验3]\n\n收获与实验1中的相同条带铸造合金,并改变喷射液状况以制备具有不同颗粒尺寸的粉末。他们是D.50=3.68μm,4.93μm和9.34μm。关于这些粉末,与实验2相同的形状,并产生具有JS = 0.73T的渗透层和填充密度3.8g / cm3填充上述三种粉末并烧结。同样在这种情况下,在整个过程中,在研磨到烧结中,在高纯度Ar气体中进行工作,使得粉末没有触摸空气。为了比较,通过传统的模压机制造烧结体。在常规方法的情况下,所有作品在惰性气体中进行,使得粉末和压缩机在烧结之前没有触摸空气。烧结温度也在该实施方案中,即使在使用常规的模具压力机方法时,50=3.68μm,1030°C,d50=4.93μm,1050°C,D50=9.34μm为1110℃。获得了在这些温度下抑制了异常晶粒生长的最佳烧结体。在烧结后,将任何烧结体在500℃下热处理1小时。通过测量在实验1中测量的脉冲磁化,在表1中示出了测量矫顽力的结果和烧结体中的氧气量的结果。为了比较,常规模具压机产生的烧结体的矫顽力和烧结体中的氧气量如表2所示。\n\n【表格1】\n\n\n\n[表2]\n\n\n\n【0112】\n\n与表1相比,与表1相比,当使用具有小粉末粒径的粉末时,可以看出,与传统方法相比,本发明的方法可以获得更大的矫顽力。这是因为,如每个表所示,通过本发明的方法减少了在该过程中氧化的程度。应注意,在比较例的实验期间存在类似于以下内容的事故。这是D.50=3.68μm在比较例的实验期间加热粉末并燃烧手套箱的轻微泄漏。通常,在通过常规模具压制的NDFEB磁体的生产中,由于模具壁压和粉末,在压粉后,产生热量,或者压力本身,外部氧气的摩擦产生热量,或者,外部氧气容易从外部侵入外部由于花粉和放置,放置和拳击工作机器人的故障以及经常发生的问题,并且整个系统都设计用于在AR气氛中运行。即使是,烧结后的烧结氧量也可能增加。当超过氧气量时,可以加热粉末,导致导致燃烧或爆炸的事故。另一方面,在本发明的方法中,可以抑制氧气进入系统的侵入,并且该状态稳定,因此即使粉末粒径小,烧结后烧结也很稳定。氧气量在体中可以非常低,并且可以生产稳定的低氧烧结体。尽管表1和2之间的差异是较少的实施例的比较,但是在具有高产量的大规模生产中,本发明的效果预计将大于表1和表2。\n\n根据这个例子,50=3.68μm粉末是相当高的矫顽力,而是在本发明的方法中,50还可以使用小粉末,并且已经证明了本发明的方法可以增强,而不会加入诸如Dy和Tb的昂贵的稀土元素。\n\n[简要描述;简介]\n\n【0113】\n\n【图1】图7是表示在制造本发明的磁各向异性稀土烧结磁体的制造方法的实践中使用的单级填充容器的一例的透视图。\n\n【图2】图。图7是示出在制造本发明的磁各向异性稀土烧结磁体的制造方法的实践中使用的大量填充容器的示例的透视图。\n\n图3.图。图1是示出该实施例的填充容器中使用的盖子的示例的透视图。\n\n图4.示意性框图,其示出了本发明的磁各向异性稀土烧结磁体的制造装置的实例。\n\n图5.示意性框图,其示出了本发明的磁各向异性稀土烧结磁体的制造装置的实例。\n\n[标志的说明]\n\n【0114】\n\n40 ...散装墙\n\n41 ...称重和填充部分\n\n42 ...高密度\n\n43 ...磁场取向\n\n44 ...烧结炉\n\n45 ...传送带\n\n46 ...容器\n\n47 ...料斗\n\n48 ......指南\n\n49 ...盖子\n\n50 ...压圆柱\n\n51 ......\n\n52 ...攻丝设备\n\n53 ...持有人\n\n54 ...线圈\n\n55 ...外部隔断墙');
INSERT INTO `os_patent_instruction_text` VALUES (13032, 22861, 'BACKGROUND OF THE INVENTION\n\n[0001]1. Field of the Invention\n\n[0002]The present invention relates to an R-T-B based sintered magnet and a rare-earth alloy as its material.\n\n[0003]2. Description of the Related Art\n\n[0004]An R-T-B based sintered magnet, one of the most prominent high-performance permanent magnets (which is sometimes called a “neodymium-iron-boron-based sintered magnet”), has excellent magnetic properties, and is used in motors, actuators, and various other applications.\n\n[0005]An R-T-B based sintered magnet is comprised of a main phase consisting essentially of a compound with an R2Fe14B type crystal structure (i.e., R2Fe14B compound phase), an R-rich phase and a B-rich phase. Basic compositions of R-T-B based sintered magnets are disclosed, for example, in U.S. Pat. Nos. 4,770,723 and 4,792,368, the entire disclosures of which are hereby incorporated by reference. An R-T-B based sintered magnet has a higher maximum energy product than any of various other magnets, but is expected to have its performance (in remanence, among other things) further improved. For instance, even just 1% increase in remanence should have an immense industrial value.\n\n[0006]To increase the remanence of a sintered magnet, the density of the sintered magnet (which will be sometimes referred to herein as a “sintered density”) needs to be as close to its true density as possible. However, if the sintering process is carried out either at a higher temperature or for a longer time to increase the density of an R-T-B based sintered magnet, then the sintered density will increase but the crystal grains thereof will have excessively big sizes to cause a decrease in coercivity, which is a problem. Particularly if an “abnormal grain growth” occurred to produce giant crystal grains (main phases) locally, then the square ratio Hk/HcJ of the demagnetization curve would decrease so much as to cause various inconveniences when such a magnet is actually used.\n\n[0007]That is to say, in the prior art, it is difficult to increase the sintered density of an R-T-B based sintered magnet without sacrificing its coercivity. Also, even if sintering conditions that would contribute to striking an adequate balance in resultant performance could be found, their margins should be too narrow to manufacture R-T-B based sintered magnets with excellent performance constantly on an industrial basis.\n\n[0008]Japanese Patent Application Laid-Open Publications No. 61-295355 and No. 2002-75717 disclose techniques of suppressing the abnormal grain growth by nucleating a boride on a gain boundary with the addition of Ti, Zr or any other element that produces the boride. According to the methods disclosed in Japanese Patent Application Laid-Open Publications No. 61-295355 and No. 2002-75717, the sintered density can be increased with the excessive increase in crystal grain size avoided (i.e., with the decrease in coercivity minimized).\n\n[0009]According to the methods disclosed in Japanese Patent Application Laid-Open Publications No. 61-295355 and No. 2002-75717, however, a boride phase with no magnetic force (i.e., B-rich phase) is present in the sintered magnet, and the main phase that produces the magnetism (i.e., R2T14B type compound phase) has a decreased volume percentage, thus resulting in decreased remanence.\n\nSUMMARY OF THE INVENTION\n\n[0010]In order to overcome the problems described above, an object of the present invention is to provide an R-T-B based sintered magnet of which the remanence is increased by minimizing both the decrease in coercivity and the decrease in the volume percentage of its main phase.\n\n[0011]A rare-earth sintered magnet according to the present invention, of which the main phase includes an R2T14B type compound phase, includes: 27 mass % through 32 mass % of R, which is at least one rare-earth element that is selected from the group consisting of Nd, Pr, Tb, and Dy and that always includes at least one of Nd and Pr; 60 mass % through 73 mass % of T, which is either Fe alone or a mixture of Fe and Co; 0.85 mass % through 0.98 mass % of Q, which is either B alone or a mixture of B and C and which is converted into B on a number of atoms basis when its mass percentage is calculated; more than 0 mass % through 0.3 mass % of Zr; at most 2.0 mass % of an additive element M, which is at least one element selected from the group consisting of Al, Cu, Ga, In and Sn; and inevitably contained impurities.\n\n[0012]In one preferred embodiment, the magnet includes substantially no accumulated phases of Q.\n\n[0013]In another preferred embodiment, the additive element includes Ga, which accounts for 0.01 mass % through 0.08 mass % of the magnet.\n\n[0014]In another preferred embodiment, the magnet includes at most 0.95 mass % of Q.\n\n[0015]In another preferred embodiment, the magnet includes at least 0.90 mass % of Q.\n\n[0016]In another preferred embodiment, the magnet has a square ratio Hk/HcJ of at least 0.9 in its demagnetization curve.\n\n[0017]A rare-earth alloy according to the present invention is a material alloy for a rare-earth sintered magnet, a main phase of which includes an R2T14B type compound phase. The alloy includes: 27 mass % through 32 mass % of R, which is at least one rare-earth element that is selected from the group consisting of Nd, Pr, Tb, and Dy and that always includes at least one of Nd and Pr; 60 mass % through 73 mass % of T, which is either Fe alone or a mixture of Fe and Co; 0.85 mass % through 0.98 mass % of Q, which is either B alone or a mixture of B and C; more than 0 mass % through 0.3 mass % of Zr; at most 2.0 mass % of an additive element M, which is at least one element selected from the group consisting of Al, Cu, Ga, In and Sn; and inevitably contained impurities.\n\n[0018]In one preferred embodiment, the alloy includes substantially no accumulated phases of Q.\n\n[0019]In another preferred embodiment, the additive element includes Ga, which accounts for 0.01 mass % through 0.08 mass % of the magnet.\n\n[0020]In another preferred embodiment, the alloy includes at most 0.95 mass % of Q.\n\n[0021]According to the present invention, the abnormal grain growth can be suppressed without producing any boride phase. As a result, an R-T-B based sintered magnet can be obtained with the decreased in coercivity minimized and with the remanence increased.\n\nBRIEF DESCRIPTION OF THE DRAWINGS\n\n[0022]FIG. 1 is a graph showing the demagnetization curves of Samples Nos. 1 through 6.\n\n[0023]FIG. 2 is a graph showing how the magnetic properties of Samples Nos. 1 and 4 changed with the sintering temperature.\n\n[0024]FIG. 3 is a photograph showing the metallographic structure of Sample No. 1 that had been sintered at 1,080° C. and then looked at through a polarizing microscope.\n\n[0025]FIG. 4 is a photograph showing the metallographic structure of Sample No. 1 that had been sintered at 1,100° C. and then looked at through a polarizing microscope.\n\n[0026]FIG. 5 is a photograph showing the metallographic structure of Sample No. 1 that had been sintered at 1,120° C. and then looked at through a polarizing microscope.\n\n[0027]FIG. 6 is a photograph showing the metallographic structure of Sample No. 4 that had been sintered at 1,080° C. and then looked at through a polarizing microscope.\n\n[0028]FIG. 7 is a photograph showing the metallographic structure of Sample No. 4 that had been sintered at 1,100° C. and then looked at through a polarizing microscope.\n\n[0029]FIG. 8 is a photograph showing the metallographic structure of Sample No. 4 that had been sintered at 1,120° C. and then looked at through a polarizing microscope.\n\n[0030]FIG. 9 shows the backscattered electron image (BEI) of the sintered magnet of Sample No. 2, composition images of Nd and B, and the image of an additive element Ti on the upper left, upper right, lower left and lower right portions, respectively, all of which were taken with an EPMA.\n\n[0031]FIG. 10 shows the backscattered electron image (BEI) of the sintered magnet of Sample No. 3, composition images of Nd and B, and the image of an additive element V on the upper left, upper right, lower left and lower right portions, respectively, all of which were taken with an EPMA.\n\n[0032]FIG. 11 shows the backscattered electron image (BEI) of the sintered magnet of Sample No. 4, composition images of Nd and B, and the image of an additive element Zr on the upper left, upper right, lower left and lower right portions, respectively, all of which were taken with an EPMA.\n\n[0033]FIG. 12 shows the backscattered electron image (BEI) of the sintered magnet of Sample No. 5, composition images of Nd and B, and the image of an additive element Nb on the upper left, upper right, lower left and lower right portions, respectively, all of which were taken with an EPMA.\n\n[0034]FIG. 13 shows the backscattered electron image (BEI) of the sintered magnet of Sample No. 6, composition images of Nd and B, and the image of an additive element Mo on the upper left, upper right, lower left and lower right portions, respectively, all of which were taken with an EPMA.\n\n[0035]FIG. 14 shows the backscattered electron image (BEI) of the sintered magnet as a comparative sample, composition images of Nd and B, and the image of an additive element Zr on the upper left, upper right, lower left and lower right portions, respectively, all of which were taken with an EPMA.\n\n[0036]FIG. 15 is a graph summarizing how the magnetic properties of Samples Nos. 7 through 20 change with the mass fraction of B, where the abscissa represents the B mass fraction while the ordinate represents the remanence Br in the upper half and the coercivity HcJ in the lower half, respectively.\n\n[0037]FIG. 16 is a graph showing how the magnetic properties changed with the mass fraction of Zr in two situations where the sintering temperatures were 1,060° C. and 1,080° C., respectively.\n\nDETAILED DESCRIPTION OF PREFERRED EMODIMENTS\n\n[0038]The present inventors discovered that when 0.3 mass % or less of Zr was added to an R2T14B based rare-earth sintered magnet including at most 0.98 mass % of B, the abnormal grain growth could be suppressed without producing any boride phase, thus acquiring the basic idea of the present invention.\n\n[0039]An R2T14B based rare-earth sintered magnet according to a preferred embodiment of the present invention includes: 27 mass % through 32 mass % of R, which is at least one rare-earth element that is selected from the group consisting of Nd, Pr, Tb, and Dy and that always includes at least one of Nd and Pr; 60 mass % through 73 mass % of T, which is either Fe alone or a mixture of Fe and Co; 0.85 mass % through 0.98 mass % of B; more than 0 mass % through 0.3 mass % of Zr; at most 2.0 mass % of an additive element M, which is at least one element selected from the group consisting of Al, Cu, Ga, In and Sn; and inevitably contained impurities.\n\n[0040]R is at least one rare-earth element that is selected from the group consisting of Nd, Pr, Dy and Tb and that always includes at least one of Nd and Pr. Preferably, a combination of rare-earth elements such as Nd—Dy, Nd—Tb, Nd—Pr—Dy or Nd—Pr—Tb is used. Among these rare-earth elements, Dy and Tb are particularly effective in increasing the coercivity. Also, R does not have to be a pure element but may include some impurities, which should be inevitably contained during every manufacturing process, as long as such a non-pure rare-earth element is easily available on an industrial basis. If the mass fraction of R were less than 27 mass %, high magnetic properties (or high coercivity among other things) could not be realized. However, if the mass fraction exceeded 32 mass %, then the remanence would decrease. That is why the mass fraction of R is preferably 27 mass % through 32 mass %.\n\n[0041]T always includes Fe, a portion (preferably, at most 50%) of which may be replaced with Co. T may also include small amounts of transition metal elements other than Fe and Co. The addition of Co is effective in improving the temperature characteristic and corrosion resistance. Normally, 10 mass % or less of Co and Fe as the balance are used, in combination. If the mass fraction of T were less than 60 mass %, then the remanence would decrease. Nevertheless, if the mass fraction of T exceeded 73 mass %, then the coercivity would decrease. In view of these considerations, the mass fraction of T is preferably 60 mass % through 73 mass %.\n\n[0042]Zr is an essential element in the present invention. As will be described later by way of experimental examples, Zr achieves unique effects. Zr replaces rare-earth sites of the main phase, makes a solid solution, and slows down the crystal growth rate, thereby suppressing the abnormal grain growth. As disclosed in Japanese Patent Application Laid-Open Publications No. 61-295355 and No. 2002-75717, in the prior art, they believe that a boride is indispensable in order to suppress the abnormal grain growth. Contrary to this common knowledge in the prior art, the present inventors discovered that the abnormal grain growth could be suppressed even without nucleating any boride. Specifically, by adding Zr, the sintering process can be carried out even at a temperature and/or for an amount of time, which would cause the abnormal grain growth according to a conventional composition, without nucleating any boride phase that would decrease the remanence, and the sintered density can be increased while maintaining the microcrystalline structure. According to a preferred embodiment of the present invention, a magnet in which a main phase having a tetragonal R2T14B type crystal structure accounts for 90% or more of the overall volume and which includes substantially no B-rich phases (Q accumulated phase: R1.1Fe4B4 phase, for example), can be obtained.\n\n[0043]As used herein, if the magnet “includes substantially no B-rich phases”, it means that when randomly picked 10 or more portions of the magnet are observed with an EPMA, no Q accumulated structure is identified in 90% or more of those portions. Also, if “no Q accumulated phase is identified”, then the total area of a portion where bright spots are concentrated (i.e., a portion attributed to an accumulated phase) is less than 5% of the overall vision of 100 μm×100 μm when the fluorescence x-rays (B-Kα) of born (B) are observed with an EPMA (e.g., EPM1610 produced by Shimadzu Corporation) under the conditions including an acceleration voltage of 15 kV, a beam diameter of 1 μm, a current value of 30 nA (measured with a Faraday cup) and spectral crystals of LSA200.\n\n[0044]However, once the Zr mass fraction exceeds 0.3 mass %, the remanence decreases. That is why the Zr mass fraction is preferably 0.3 mass % or less. Also, if there is an excessive amount of B, then a boride phase is produced. Accordingly, to minimize the production of such boride phases, the B mass fraction is set to 0.98 mass % or less. Furthermore, a portion of B may be replaced with C. When either B alone or a mixture of B and C is identified by Q, C that replaces a portion of B may be converted into B on a number of atoms basis when the mass percentage of Q is calculated.\n\n[0045]The additive element M is at least one element selected from the group consisting of Al, Cu, Ga, In and Sn. M is preferably added at 2.0 mass % or less. This is because the remanence decreases once the mass fraction of M exceeds 2.0 mass %.\n\n[0046]Among these additive elements, Ga may achieve unique effects. As will be described later by way of experimental examples, if the mass fraction of B (or Q) is low, then a soft magnetic R2T17 compound may be produced to decrease coercivity and remanence in some cases. By adding an extremely small amount of Ga to such a composition range, the production of the soft magnetic phase is minimized, thus realizing a rare-earth sintered magnet that exhibits high coercivity and high remanence in a broad B mass fraction range. The present invention is particularly effective in a situation where B is added at 0.98 mass % or less to cut down the production of Zr borides.\n\n[0047]The effects achieved by adding Ga are noticeable if the mass fraction of B (or Q) is 0.95 mass % or less and 0.90 mass % or more. Also, if the Ga mass fraction is less than 0.01 mass %, those effects may not be achieved and it may be difficult to perform analytical control. Nevertheless, the Ga mass fraction should not exceed 0.08 mass % because the remanence Br might drop at such a high Ga mass fraction.\n\n[0048]According to the present invention, not only the elements mentioned above but also other inevitably contained impurities may be included as well. Examples of those impurities include Mn and Cr coming from the material of Fe, Al and Si coming from Fe—B (ferroboron), and H, N and O that should be inevitably used in any manufacturing process.\n\n[0049]Also, the resultant sintered magnet preferably includes at most 0.5 mass % of oxygen, at most 0.2 mass % of nitrogen and at most 0.01 mass % of hydrogen. By setting the upper limits of these oxygen, nitrogen and hydrogen concentrations in this manner, the percentage of the main phase can be increased, whereby the remanence Br can be increased.\n\n[0050]An R-T-B based sintered magnet according to a preferred embodiment of the present invention may be produced by a known method. For example, the magnet may be made by the following process.\n\n[0051]First, a melt of a mother alloy having a predetermined composition is prepared by an induction melting process, for example, and then cooled and solidified to make a (mother) alloy. The composition of the mother alloy is controlled such that the resultant rare-earth sintered magnet will have the composition described above. The (mother) alloy may be made by a known normal method. Among various methods of making an alloy, a rapid cooling process such as a strip casting process is used particularly effectively. According to a strip casting process, cast flakes with a thickness of about 0.1 mm to about 5 mm, for example, can be obtained.\n\n[0052]Optionally, a centrifugal casting process may be adopted instead of the rapid cooling process such as a strip casting process. Also, the alloy may be made by performing a direct reduction-diffusion process instead of the melting/alloying process step. Similar effects are achievable even if a solidified alloy, made by a non-rapid cooling process, is used as the mother alloy. Compared to a rapid cooling process such as a strip casting process, however, segregation would be produced more easily, and therefore, a Zr boride might nucleate in the alloy structure to make it difficult to add Zr efficiently. Furthermore, once such a Zr boride has nucleated, that Zr boride is hard to remove through a thermal treatment and will remain even after the sintering process. Accordingly, compared to a situation where the rapidly solidified alloy is used, a sintered magnet made from such a solidified alloy is more likely to have a main phase with a decreased volume percentage and may eventually have decreased remanence Br.\n\n[0053]The resultant alloy is pulverized by a known method to a mean particle size of 1 μm to 10 μm. Such an alloy powder is preferably obtained by performing two types of pulverization processes, namely, a coarse pulverization process and a fine pulverization process. The coarse pulverization may be done by a hydrogen decrepitation process or a mechanical grinding process using a disk mill, for example. On the other hand, the fine pulverization may be done by a mechanical grinding process using a jet mill, a ball mill or an attritor, for example.\n\n[0054]The finely pulverized powder obtained by the pulverization processes described above is compacted into any of various shapes by a known compacting technique. The compaction is normally carried out by compressing the powder under a magnetic field. Alternatively, after the powder has been aligned with a pulse magnetic field, the powder may be compacted under an isostatic pressure or within a rubber mold.\n\n[0055]To feed the powder more efficiently during the compaction process, make the green density more uniform, and release the compact from the mold more easily, a liquid lubricant such as a fatty acid ester or a solid lubricant such as zinc stearate may be added to the powder yet to be finely pulverized and/or the finely pulverized powder. The lubricant is preferably added in 0.01 to 5 parts by weight with respect to the alloy powder of 100 parts by weight.\n\n[0056]The green compact may be sintered by a known method. The sintering process is preferably carried out at a temperature of 1,000° C. to 1,180° C. for approximately one to six hours. An alloy according to a preferred embodiment of the present invention can be sintered at a higher temperature than a conventional alloy thanks to the addition of Zr. Thus, a sintering temperature of 1,100° C. or more, which is hard to adopt for mass production in the prior art considering possible variations in temperature, can be adopted according to the present invention. The sintered compact is subjected to a heat treatment (aging treatment) if necessary. The heat treatment is preferably carried out at a temperature of 400° C. to 600° C. for approximately one to eight hours.\n\n[0057]Hereinafter, the present invention will be described more fully by way of experimental examples.\n\nEXPERIMENTAL EXAMPLE NO. 1\n\n[0058]Magnets having the compositions shown in Table 1 were made in the following manner as Samples Nos. 1 through 6, respectively. It should be noted that the compositions shown in Table 1 are values obtained by analyzing the resultant sintered magnets, not the compositions of the mother alloys. The composition analysis was carried out by a known method using an ICP produced by Shimadzu Corporation and a gas analyzer produced by Horiba, Ltd.\n\n[0059]In Table 1, Fe is shown as the balance. Actually, however, the balance includes Fe and very small amounts of inevitably contained impurities. The same statement will apply to Table 3 to be mentioned later.\n\n[0060]In each of the samples representing this experimental example, the mass fraction of B substantially agrees with its stoichiometric ratio defined with respect to the mass fractions of R and T. Also, calculating the volume percentages of the respective phases with the additive element M taken out of consideration, the main phase (e.g., Nd2Fe14B compound phase) has a volume percentage of 94.4%, the R-rich phase has a volume percentage of 2.5%, the B-rich phase has a volume percentage of 0.1% and the R-oxide phase (Nd2O3) has a volume percentage of 3.0%.\n\n[0061]A melt of a mother alloy with a predetermined composition was prepared and then subjected to a strip casting process, thereby making alloy cast flakes with thicknesses of about 0.2 mm to about 0.4 mm.\n\n[0062]The alloy cast flakes thus obtained were held within a hydrogen atmosphere at a normal temperature and under an absolute pressure of 0.2 MPa for two hours, thereby getting hydrogen absorbed into the alloy.\n\n[0063]Next, the hydrogen-absorbed alloy was held within a vacuum at about 600° C. for three hours and then cooled to room temperature.\n\n[0064]The resultant alloy had been broken due to hydrogen decrepitation. This alloy was sieved and crushed, thereby obtaining a coarsely pulverized powder with a particle size of 425 μm or less.\n\n[0065]Then, the coarsely pulverized powder obtained in this manner was finely pulverized within a nitrogen gas atmosphere using a jet mill pulverizer. In each of the samples, the powder had a mean particle size of 3.2 μm to 3.5 μm as measured by FSSS.\n\n[0066]A compact was made by pressing the powder thus obtained. In this case, the compaction process was carried out at a pressure of 196 MPa with a transverse magnetic field (orthogonal to the press direction) of about 1 T (tesla) applied thereto.\n\n[0067]The green compact thus obtained was sintered under various temperature conditions for approximately 2 hours, thereby making a sintered compact.\n\n[0068]The resultant sintered compact was subjected to an aging treatment within an Ar atmosphere at 550° C. for two hours, thereby obtaining each sample of the sintered magnet. Then, the magnetic properties of the magnet were evaluated.\n\n[0069]Thereafter, the magnet was further thermally demagnetized within an inert atmosphere at 400° C. and then subjected to a metallographic structure analysis and a chemical analysis.\n\n[0070]TABLE 1SampleNdFeCoAlCuGaMBOCNNo. 129.5Bal.0.880.150.100.000.000.950.390.050.010No. 229.7Bal.0.890.150.100.03Ti: 0.100.950.400.050.008No. 329.6Bal.0.880.160.100.03V: 0.100.940.400.060.009No. 429.6Bal.0.880.150.100.03Zr: 0.100.950.380.050.008No. 529.7Bal.0.900.150.100.03Nb: 0.100.950.390.050.010No. 629.7Bal.0.890.150.100.03Mo: 0.100.950.390.060.010(unit: mass %)\n\n[0071]FIG. 1 shows the demagnetization curves of the respective samples. In this case, each sample used was sintered at 1,120° C. for two hours.\n\n[0072]As is clear from the results shown in FIG. 1, Sample No. 1 including no additive element M showed very bad squareness. This is because the sintering temperature of 1,120° C. was too high for Sample No. 1 to avoid the abnormal grain growth as will be described later. Each of Samples Nos. 2, 3, 5 and 6, to which Ti, V, Nb and Mo were added as respective additive elements M, showed squareness that was better than Sample No. 1 but worse than Sample No. 4 to which Zr was added. The demagnetization curve of Sample No. 4 showed excellent squareness. Thus, it can be seen that Zr achieved unique effects.\n\n[0073]Next, it will be described with reference to FIG. 2 how the magnetic properties of Samples Nos. 1 and 4 changed with the sintering temperature. FIG. 2 is a graph of which the abscissa represents the sintering temperature and the ordinate represents the square ratio Hk/HcJ, coercivity HcJ and remanence Br in this order downward. In the square ratio Hk/HcJ used in this example as an index to squareness, Hk represents the value of an external magnetic field when the magnetization becomes 90% of the remanence Br. As can be seen from the graph shown in FIG. 2, the upper limit of the sintering temperature range resulting in good magnetic properties increased in Sample No. 4 with the additive Zr (as plotted with Δ in FIG. 2) by about 20° C. as compared with Sample No. 1 including no additive elements at all. As a result, even if the sintering temperature was set to 1,120° C. (=1, 393 K), the square ratio was still more than 0.9, showing that Sample No. 4 had excellent squareness.\n\n[0074]Next, the relationship between the sintering temperature and the squareness and abnormal grain growth will be described with reference to Table 2. In the size (particle size) columns of Table 2, the open circle ∘ represents that no abnormal grain growth occurred, while the cross x represents that the abnormal grain growth occurred. As can be seen from Table 2, Sample No. 1 including no additive elements caused the abnormal grain growth at as low as 1,100° C. and had a low square ratio Hk/HcJ. In contrast, Sample No. 4 including an additive Zr caused no abnormal grain growth even at 1,120° C. and had a square ratio as high as 0.9 or more. Also, as can be seen from the results of Samples Nos. 2, 3, 5 and 6, each of the other additive elements (i.e., Ti, V, Nb and Mo) achieved the effects of suppressing the abnormal grain growth and maintaining a high square ratio as long as the sintering temperature was up to 1,100° C. However, looking at the results at 1,120° C., it is clear that their effects were not so significant as those achieved by Zr.\n\n[0075]TABLE 21,040° C.1,060° C.1,080° C.1,100° C.1,120° C.SampleSizeHk/HcJSizeHk/HcJSizeHk/HcJSizeHk/HcJSizeHk/HcJNo. 1∘0.966∘0.967∘0.965x0.880x0.086No. 2∘0.977∘0.978∘0.975∘0.975x0.529No. 3∘0.968∘0.961∘0.970∘0.962x0.871No. 4∘0.972∘0.969∘0.972∘0.979∘0.908No. 5∘0.974∘0.980∘0.972∘0.967x0.488No. 6∘0.974∘0.982∘0.979∘0.975x0.307Legends:in size (particle size), ∘ represents that no abnormal grain growth occurred and x represents that abnormal grain growth occurred.\n\n[0076]Next, referring to FIGS. 3 through 8, shown are the metallographic structures of Samples Nos. 1 and 4, which were sintered at different temperatures and then looked at through a polarizing microscope. Specifically, FIGS. 3, 4 and 5 show how Sample No. 1 looked like after having been sintered at 1,080° C., 1,100° C. and 1,120° C., respectively. On the other hand, FIGS. 6, 7 and 8 show how Sample No. 4 looked like after having been sintered at 1,080° C., 1,100° C. and 1,120° C., respectively.\n\n[0077]As can be seen from FIG. 3, if Sample No. 1 was sintered at 1,080° C., no sign of abnormal grain growth was recognized but a good metallographic structure consisting of fine crystal grains was observed. If the sintering temperature was 1,100° C., however, a giant structure, produced by the abnormal grain growth, was already observed as can be seen from FIG. 4. And when the sintering temperature was raised to 1,120° C., a lot more giant structure was observed as shown in FIG. 5.\n\n[0078]In Sample No. 4 with an additive Zr on the other hand, the abnormal grain growth was hindered as can be seen from FIGS. 6 through 8. Even if the sintering temperature was 1,120° C., virtually no giant structure was identified as shown in FIG. 8.\n\n[0079]Next, referring to FIGS. 9 to 13, shown are the backscattered electron images (BEI) of the sintered magnets of Samples Nos. 2 through 6 (which were sintered at 1,040° C.), composition images of Nd and B, and the images of additive elements M on the upper left, upper right, lower left and lower right portions, respectively, all of which were taken with an EPMA. It can be seen that no accumulated phase (i.e., no segregation) of B was identified and no boride phase had been produced because each of these samples had a B mass fraction as low as 0.95 mass %. No accumulated phase of the additive element M (which is at least one of Ti, V, Nb and Mo) added at just 0.1 mass % was identified, either. However, segregation of Ti with a relatively small atomic weight was observed a little.\n\n[0080]As can be seen from these results, no boride nucleates if the mass fraction of B is small and if a very small amount of additive element M is introduced. More importantly, the present inventors discovered that even without nucleating any boride, the abnormal grain growth could still be suppressed contrary to the common knowledge in the prior art that a boride should be included to impede the abnormal grain growth.\n\n[0081]For the purpose of comparison, a sintered magnet having a composition consisting of 31.3 mass % of R (including 20.3 mass % of Nd, 6.0 mass % of Pr and 5.0 mass % of Dy), 0.90 mass % of Co, 0.20 mass % of Al, 0.10 mass % of Cu, 0.07 mass % of Zr, 0.99 mass % of B, and Fe and inevitably contained impurities as the balance was also observed with an EPMA. The photos taken are shown in FIG. 14. As can be seen from FIG. 14, this sintered magnet including B at a high percentage had accumulated phases of Zr and B.\n\n[0082]As described above, according to the present invention, by adding Zr to a composition including a small amount of B, the abnormal grain growth can be suppressed without producing any boride phase. Thus, an R-T-B based sintered magnet with increased remanence can be obtained by minimizing decreases in coercivity and the volume percentage of the main phase.\n\nEXPERIMENTAL EXAMPLE NO. 2\n\n[0083]Magnets having the compositions shown in the following Table 3 were produced by the same method as that used in Experimental Example No. 1. In this example, however, the concentration of oxygen in the atmospheric gas was controlled to 50 ppm or less in the fine pulverization process in order to reduce the content of oxygen in the resultant sintered magnet. These samples Nos. 7 through 20 prepared in this manner were sintered at various sintering temperatures, thereby obtaining sintered magnets, of which the properties were evaluated as shown in the following Table 4. In Table 4, each item was evaluated as in Experimental Example No. 1 described above.\n\n[0084]TABLE 3SampleNdFeCoAlCuZrGaBOCNNo. 729.3Bal.0.880.160.09——1.020.220.060.011No. 829.4Bal.0.870.150.10——0.980.210.050.010No. 929.2Bal.0.880.150.09——0.960.220.060.010No. 1029.2Bal.0.880.160.09——0.940.220.060.011No. 1129.2Bal.0.890.160.10——0.900.210.070.010No. 1229.3Bal.0.870.160.100.10—1.020.220.060.011No. 1329.2Bal.0.900.150.100.08—0.990.220.060.010No. 1429.1Bal.0.880.160.090.09—0.960.220.070.010No. 1529.2Bal.0.890.160.090.09—0.930.210.060.011No. 1629.2Bal.0.890.170.09', '发明背景 \n\n [0001] 1.发明领域 \n\n [0002] 本发明涉及一种R-T-B基烧结磁体和稀土合金作为其材料。 \n\n [0003] 2.相关技术的描述 \n\n [0004] 基于RTB的烧结磁体是最杰出的高性能永磁体之一(有时也称为“钕铁硼基烧结磁体”),具有出色的磁性能,可用于电机,执行器和各种 其他应用程序。 \n\n [0005] 基于R-T-B的烧结磁体由主相组成,该主相主要由具有R的化合物组成 2 铁 14 B型晶体结构(即R 2 铁 14 B复合相),富R相和富B相。 基于R-T-B的烧结磁体的基本组成公开于例如美国专利No. 美国专利号4,770,723和4,792,368,其全部公开内容通过引用结合于此。 基于R-T-B的烧结磁体具有比各种其他磁体中的任何一种更高的最大能量乘积,但是期望其性能(除其他方面之外)进一步提高。 例如,即使剩磁仅增加1%,也具有巨大的工业价值。 \n\n [0006] 为了增加烧结磁体的剩磁,烧结磁体的密度(在本文中有时将其称为“烧结密度”)需要尽可能接近其真实密度。 但是,如果为了提高RTB系烧结磁铁的密度而在更高温度或更长的时间下进行烧结,则烧结密度会增加,但晶粒过大而导致降低。 在矫顽力方面,这是一个问题。 特别是,如果发生“异常晶粒长大”而在局部产生巨型晶粒(主相)的情况,则退磁曲线的平方比Hk / HcJ降低得如此之多,从而在实际使用这种磁体时会带来各种不便。 \n\n [0007] 也就是说,在现有技术中,难以在不牺牲其矫顽力的情况下提高R-T-B类烧结磁体的烧结密度。 另外,即使可以找到有助于达到最终性能的适当平衡的烧结条件,它们的余量也应该太窄以至于不能在工业基础上连续制造具有优异性能的R-T-B基烧结磁体。 \n\n [0008] 日本专利申请公开第61-295355号和第2002-75717号公开了通过添加Ti,Zr或产生硼化物的任何其他元素使硼化物在增益边界上成核来抑制异常晶粒生长的技术。 根据日本专利申请公开第61-295355号和第2002-75717号中公开的方法,可以在避免过度增大晶粒尺寸的情况下(即,将矫顽力的降低最小化)来提高烧结密度。  。 \n\n [0009] 然而,根据日本专利申请公开第61-295355号和第2002-75717号中公开的方法,在烧结磁体中存在没有磁力的硼化物相(即富B相),并且 产生磁性的主要相(即,R 2 Ť 14 B型化合物相)的体积百分率降低,因此剩磁降低。 \n\n 发明内容 \n\n [0010] 为了克服上述问题,本发明的目的是提供一种R-T-B基烧结磁体,其通过使矫顽力的降低和主相的体积百分比的降低最小化来增加剩磁。 \n\n [0011] 根据本发明的稀土烧结磁体,其主相包括R。 2 Ť 14 B型化合物相包括:27质量%至32质量%的R,R是选自由Nd,Pr,Tb和Dy组成的组中的至少一种稀土元素,并且总是包括以下至少一种: 钕和Pr;  T为60质量%以上73质量%以下的T,可以是单独的Fe或Fe和Co的混合物。  Q为0.85质量%以上至0.98质量%以下。Q为单独的B或B与C的混合物,在算出其质量百分比时按原子数换算成B。  Zr的0.3质量%以上至0质量%以上。 最多为2.0质量%的添加元素M,该添加元素M是选自Al,Cu,Ga,In和Sn中的至少一种元素。 不可避免地含有杂质。 \n\n [0012] 在一优选实施例中,磁体基本上不包括Q的累积相。 \n\n [0013] 在另一个优选的实施方式中,添加元素包括Ga,其占磁体的0.01质量%至0.08质量%。 \n\n [0014] 在另一个优选的实施方式中,磁体包含至多0.95质量%的Q。 \n\n [0015] 在另一个优选的实施方式中,磁体包含至少0.90质量%的Q。 \n\n [0016] 在另一个优选实施例中,磁体在其退磁曲线中具有至少0.9的平方比Hk / HcJ。 \n\n [0017] 根据本发明的稀土合金是用于稀土烧结磁体的材料合金,其主相包括R。 2 Ť 14 B型复合相。 合金包括:27质量%至32质量%的R,R是选自由Nd,Pr,Tb和Dy组成的组中的至少一种稀土元素,并且总是包括Nd和Pr中的至少一种。  ;  T为60质量%以上73质量%以下的T,可以是单独的Fe或Fe和Co的混合物。  Q为0.85质量%以上至0.98质量%以下,Q为单独的B或B与C的混合物。  Zr的0.3质量%以上至0质量%以上。 最多为2.0质量%的添加元素M,该添加元素M是选自Al,Cu,Ga,In和Sn中的至少一种元素。 不可避免地含有杂质。 \n\n [0018] 在一个优选的实施方案中,合金基本上不包含Q的累积相。 \n\n [0019] 在另一个优选的实施方式中,添加元素包括Ga,其占磁体的0.01质量%至0.08质量%。 \n\n [0020] 在另一个优选的实施方案中,合金包含至多0.95质量%的Q。 \n\n [0021] 根据本发明,可以在不产生任何硼化物相的情况下抑制异常晶粒生长。 结果,可以得到使矫顽力的降低最小化,剩磁增加的R-T-B系烧结磁铁。 \n\n 附图的简要说明 \n\n [0022] 图。 图1是示出样品编号1至6的退磁曲线的图。 \n\n [0023] 图。 图2是示出样品编号1和4的磁性随烧结温度如何变化的图。 \n\n [0024] 图。 图3是示出在1080℃下烧结然后通过偏光显微镜观察的1号样品的金相组织的照片。 \n\n [0025] 图。 图4是示出在1100℃下烧结然后通过偏光显微镜观察的1号样品的金相组织的照片。 \n\n [0026] 图。 图5是示出在1,120℃下烧结然后通过偏光显微镜观察的1号样品的金相组织的照片。 \n\n [0027] 图。 图6是表示在1080℃下烧结后通过偏光显微镜观察的4号试样的金相组织的照片。 \n\n [0028] 图。 图7是示出在1100℃下烧结然后通过偏光显微镜观察的4号样品的金相组织的照片。 \n\n [0029] 图。 图8是示出在1120℃下烧结然后通过偏光显微镜观察的4号样品的金相组织的照片。 \n\n [0030] 图。 图9分别示出样品2的烧结磁体的背散射​​电子图像(BEI),Nd和B的组成图像,以及左上,右上,左下和右下部分的添加元素Ti的图像。  ,所有这些都是使用EPMA拍摄的。 \n\n [0031] 图。 图10分别示出3号样品的烧结磁体的反向散射电子图像(BEI),Nd和B的组成图像以及左上方,右上方,左下方和右下方的添加元素V的图像。  ,所有这些都是使用EPMA拍摄的。 \n\n [0032] 图。 图11示出了样品编号4的烧结磁体的背向散射电子图像(BEI),Nd和B的组成图像,以及左上,右上,左下和右下部分的添加元素Zr的图像。  ,所有这些都是使用EPMA拍摄的。 \n\n [0033] 图。 图12分别示出样品编号5的烧结磁体的反向散射电子图像(BEI),Nd和B的组成图像,以及左上,右上,左下和右下部分的添加元素Nb的图像。  ,所有这些都是使用EPMA拍摄的。 \n\n [0034] 图。 图13分别示出样品编号6的烧结磁体的背向散射电子图像(BEI),Nd和B的组成图像,以及左上,右上,左下和右下部分的添加元素Mo的图像。  ,所有这些都是使用EPMA拍摄的。 \n\n [0035] 图。 图14分别示出了作为比较样本的烧结磁体的背向散射电子图像(BEI),Nd和B的组成图像以及左上,右上,左下和右下部分的添加元素Zr的图像, 所有这些都是用EPMA拍摄的。 \n\n [0036] 图。 图15是概述样品编号7至20的磁性能如何随B的质量分数变化的图,其中横坐标表示B质量分数,而纵坐标表示上半部的剩磁Br,而下半部表示矫顽力HcJ。 一半。 \n\n [0037] 图。 图16是示出在烧结温度分别为1,060℃和1,080℃的两种情况下磁性能如何随Zr的质量分数变化的图。 \n\n 优选装置的详细说明 \n\n [0038] 本发明人发现,当在R中添加0.3质量%以下的Zr时, 2 Ť 14 含有最多0.98质量%的B的B基稀土类烧结磁体,可以在不产生硼化物相的情况下抑制异常晶粒的生长,从而获得了本发明的基本思想。 \n\n [0039] R 2 Ť 14 根据本发明的优选实施方式的B基稀土烧结磁体包括:27质量%至32质量%的R,R是选自由Nd,Pr,Tb组成的组中的至少一种稀土元素。 和Dy,并且始终包含Nd和Pr中的至少一个;  T为60质量%以上73质量%以下的T,可以是单独的Fe或Fe和Co的混合物。  B为0.85质量%〜0.98质量%。  Zr的0.3质量%以上至0质量%以上。 最多为2.0质量%的添加元素M,该添加元素M是选自Al,Cu,Ga,In和Sn中的至少一种元素。 不可避免地含有杂质。 \n\n [0040] R是选自Nd,Pr,Dy和Tb的至少一种稀土元素,并且总是包括Nd和Pr的至少之一。 优选地,使用诸如Nd-Dy,Nd-Tb,Nd-Pr-Dy或Nd-Pr-Tb的稀土元素的组合。 在这些稀土元素中,Dy和Tb对提高矫顽力特别有效。 另外,R不必是纯元素,而可以包含一些杂质,只要在工业上容易获得这种非纯稀土元素,在每个制造过程中就不可避免地要包含这些杂质。 如果R的质量分数小于27质量%,则无法实现高磁特性(或除其他以外的高矫顽力)。 然而,如果质量分数超过32质量%,则剩磁将降低。 因此,R的质量分数优选为27质量%〜32质量%。 \n\n [0041] T总是包含Fe,其一部分(优选至多50%)可以被Co替代。T还可以包含除Fe和Co以外的少量过渡金属元素。添加Co对改善温度特性是有效的。 和耐腐蚀性。 通常,将余量的Co和Fe的10质量%以下组合使用。 如果T的质量分数小于60质量%,则剩磁降低。 但是,如果T的质量分数超过73质量%,则矫顽力降低。 考虑到这些考虑,T的质量分数优选为60质量%至73质量%。 \n\n [0042] Zr是本发明中必不可少的元素。 如稍后将通过实验示例所述,Zr实现了独特的效果。  Zr置换主相的稀土部位,固溶,减慢晶体的生长速度,从而抑制异常晶粒的生长。 如在日本专利申请公开第61-295355号和第2002-75717号中所公开的,在现有技术中,他们认为,为了抑制异常晶粒生长,硼化物是必不可少的。 与现有技术中的常识相反,本发明人发现即使不使任何硼化物成核也可以抑制异常晶粒生长。 具体地,通过添加Zr,即使在根据常规组成将导致异常晶粒生长的温度和/或时间量下也可以进行烧结过程,而不会使会降低剩磁的任何硼化物相成核, 并且可以在保持微晶结构的同时提高烧结密度。 根据本发明的优选实施例,一种磁体,其中主相具有四方R 2 Ť 14 B型晶体结构占总体积的90%以上,并且基本上不包含富B相(例如Q累积相:R1.1Fe4B4相)。 \n\n [0043] 如本文所用,如果磁体“基本上不包括富B相”,则意味着当用EPMA观察到磁体的随机选取的10个或更多部分时,在这些部分的90%或更多中未发现Q累积结构 。 此外,如果“未识别出Q累积相”,则亮点集中的部分(即,归因于累积相的部分)的总面积小于100μm×100μm总体视觉的5%。 当在包括15kV的加速电压,1mm的光束直径,电流的条件下用EPMA(例如,Shimadzu Corporation生产的EPM1610)观察出生的(B)的荧光x射线(B-Kα)时 LSA200的光谱晶体为30 nA(用法拉第杯测量)。 \n\n [0044] 但是,Zr质量分数超过0.3质量%时,剩磁降低。 因此,Zr质量分数优选为0.3质量%以下。 另外,如果存在过量的B,则产生硼化物相。 因此,为了使这种硼化物相的产生最小化,将B质量分数设定为0.98质量%以下。 此外,B的一部分可以用C代替。当单独的B或B与C的混合物用Q标识时,当质量百分比为B时,取代B的一部分的C可以基于原子数转换为B。  Q的计算。 \n\n [0045] 添加剂元素M是选自Al,Cu,Ga,In和Sn中的至少一种元素。  M优选以2.0质量%以下添加。 这是因为,一旦M的质量分数超过2.0质量%,则剩磁降低。 \n\n [0046] 在这些添加元素中,Ga可以实现独特的效果。 如稍后将通过实验示例所述,如果B(或Q)的质量分数较低,则软磁R 2 Ť 17  在某些情况下,可能会产生化合物以降低矫顽力和剩磁。 通过在该组成范围内添加极少量的Ga,软磁相的产生最小化,从而实现了在宽的B质量分数范围内表现出高矫顽力和高剩磁的稀土类烧结磁体。 本发明在以0.98质量%以下添加B以减少硼化锆的产生的情况下特别有效。 \n\n [0047] 如果B(或Q)的质量分数为0.95质量%以下且0.90质量%以上,则通过添加Ga而获得的效果显着。 此外,如果Ga质量分数小于0.01质量%,则可能无法获得这些效果,并且可能难以进行分析控制。 然而,Ga质量分数不应超过0.08质量%,因为在如此高的Ga质量分数下剩磁Br可能下降。 \n\n [0048] 根据本发明,不仅可以包括上述元素,而且还可以包括其他不可避免地包含的杂质。 这些杂质的实例包括来自Fe的材料的Mn和Cr,来自Fe-B(铁硼烷)的Al和Si,以及在任何制造过程中都不可避免地使用的H,N和O。 \n\n [0049] 而且,所得烧结磁体优选包含至多0.5质量%的氧,至多0.2质量%的氮和至多0.01质量%的氢。 通过以这种方式设定这些氧,氮和氢浓度的上限,可以增加主相的百分比,从而可以增加剩磁Br。 \n\n [0050] 根据本发明的优选实施方式的基于R-T-B的烧结磁体可以通过已知方法来制造。 例如,可以通过以下过程来制造磁体。 \n\n [0051] 首先,例如通过感应熔融法制备具有预定组成的母合金的熔体,然后冷却并固化以制备(母)合金。 控制母合金的组成,使得所得的稀土烧结磁体将具有上述组成。  (母)合金可以通过公知的通常方法来制造。 在各种制造合金的方法中,特别有效地使用快速冷却工艺,例如带钢铸造工艺。 根据带钢铸造工艺,可以获得例如约0.1mm至约5mm的厚度的铸造薄片。 \n\n [0052] 可选地,可以采用离心铸造工艺代替诸如带钢铸造工艺的快速冷却工艺。 而且,可以通过执行直接的还原扩散工艺而不是熔融/合金化工艺步骤来制造合金。 即使将通过非快速冷却工艺制成的凝固合金用作母合金,也可以获得类似的效果。 然而,与诸如带材铸造工艺的快速冷却工艺相比,偏析会更容易产生,因此,硼化锆可能会在合金结构中成核,从而难以有效地添加锆。 此外,一旦这种Zr硼化物成核,则该Zr硼化物难以通过热处理除去,并且即使在烧结过程之后也将保留。 因此,与使用快速凝固的合金的情况相比,由这种凝固的合金制成的烧结磁体更可能具有具有减小的体积百分比的主相并且最终可能具有减小的剩磁Br。 \n\n [0053] 通过已知方法将所得合金粉碎至1μm至10μm的平均粒径。 这样的合金粉末优选通过进行两种粉碎处理而得到,即粗粉碎处理和细粉碎处理。 粗粉碎可通过例如氢破碎法或使用盘磨机的机械研磨法进行。 另一方面,细粉碎可以通过例如使用喷射磨,球磨机或磨碎机的机械研磨工艺来进行。 \n\n [0054] 通过已知的压紧技术将通过上述粉碎工艺获得的细粉碎的粉末压制成各种形状。 压实通常通过在磁场下压缩粉末来进行。 可替代地,在粉末已经与脉冲磁场对准之后,可以在等静压力下或在橡胶模具内将粉末压实。 \n\n [0055] 为了在压实过程中更有效地进料粉末,使生坯密度更均匀,并更容易从模具中释放压块,可以将液体润滑剂(例如脂肪酸酯)或固体润滑剂(例如硬脂酸锌)添加到模具中。 尚未细粉碎的粉末和/或细粉碎的粉末。 相对于100重量份的合金粉末,优选以0.01至5重量份的量添加润滑剂。 \n\n [0056] 压粉坯可以通过已知方法烧结。 烧结过程优选在1,000℃至1,180℃的温度下进行约1至6小时。 由于添加了Zr,可以在比常规合金更高的温度下烧结根据本发明的优选实施方式的合金。 因此,根据本发明,可以采用1100℃以上的烧结温度,在现有技术中考虑到温度的可能变化难以采用该烧结温度。 如果需要,对烧结体进行热处理(时效处理)。 热处理优选在400℃至600℃的温度下进行约1小时至8小时。 \n\n [0057] 在下文中,将通过实验实施例更全面地描述本发明。 \n\n 实验例编号 1个 \n\n [0058] 具有表1所示组成的磁体分别以下列方式制成样品1至6。 应当指出,表1中所示的组成是通过分析所得烧结磁体获得的值,而不是母合金的组成。 使用Shimadzu Corporation生产的ICP和Horiba,Ltd生产的气体分析仪通过已知方法进行组成分析。 \n\n [0059] 在表1中,Fe显示为余量。 然而,实际上,余量包括Fe和非常少量不可避免地包含的杂质。 相同的陈述将适用于稍后将提及的表3。 \n\n [0060] 在代表该实验例的每个样品中,B的质量分数基本上与相对于R和T的质量分数所定义的化学计量比一致。而且,在取出添加元素M的情况下,计算各相的体积百分比。 考虑到主要相(例如,钕 2 铁 14 B化合物相的体积百分比为94.4%,富R相的体积百分比为2.5%,富B相的体积百分比为0.1%,R氧化物相(Nd 2 Ø 3 )的体积百分比为3.0%。 \n\n [0061] 制备具有预定组成的母合金的熔体,然后进行带式铸造工艺,从而制成厚度为约0.2mm至约0.4mm的合金铸造薄片。 \n\n [0062] 将如此获得的合金铸造薄片在常温和0.2MPa的绝对压力下在氢气氛中保持2小时,从而使氢吸收到合金中。 \n\n [0063] 接下来,将吸氢合金在约600℃的真空中保持3小时,然后冷却至室温。 \n\n [0064] 所产生的合金由于氢爆裂而破裂。 将该合金过筛并粉碎,从而获得粒度为425μm或更小的粗粉碎粉末。 \n\n [0065] 然后,使用喷射式粉碎机在氮气气氛中将以这种方式获得的粗粉碎粉末进行细粉碎。 在每个样品中,通过FSSS测量,粉末的平均粒径为3.2μm至3.5μm。 \n\n [0066] 通过压制由此获得的粉末制成压块。 在这种情况下,在196MPa的压力下施加约1T(特斯拉)的横向磁场(与压制方向正交)进行压实处理。 \n\n [0067] 将这样获得的生坯在各种温度条件下烧结约2小时,从而制成烧结体。 \n\n [0068] 将得到的烧结体在550℃的Ar气氛中进行2小时的时效处理,得到烧结磁体的各样品。 然后,评估磁体的磁性能。 \n\n [0069] 之后,将磁体在惰性气氛中在400℃下进一步热消磁,然后进行金相结构分析和化学分析。 \n\n [0070] \n\n   表格1  样品 钕 铁 有限公司 Al Cu 嘎 M B O C N  1号 29.5 巴尔 0.88 0.15 0.10 0.00 0.00 0.95 0.39 0.05 0.010  2号 29.7 巴尔 0.89 0.15 0.10 0.03 钛:0.10 0.95 0.40 0.05 0.008  3号 29.6 巴尔 0.88 0.16 0.10 0.03 V:0.10 0.94 0.40 0.06 0.009  4号 29.6 巴尔 0.88 0.15 0.10 0.03 Zr:0.10 0.95 0.38 0.05 0.008  5号 29.7 巴尔 0.90 0.15 0.10 0.03 铌:0.10 0.95 0.39 0.05 0.010  6号 29.7 巴尔 0.89 0.15 0.10 0.03 钼:0.10 0.95 0.39 0.06 0.010  (单位:质量%) \n\n [0071] 图。 图1示出了各个样品的退磁曲线。 在这种情况下,将所使用的每个样品在1,120℃下烧结两个小时。 \n\n [0072] 从图9所示的结果可以清楚地看出: 如图1所示,不包含添加元素M的1号样品的矩形度非常差。 这是因为1,120℃的烧结温度对于1号样品而言太高而不能避免如稍后将描述的异常晶粒生长。 分别添加了Ti,V,Nb和Mo作为添加元素M的2号,3号,5号和6号样品的矩形度均优于1号样品,但比Zr差的4号样品差 加入。  4号样品的退磁曲线显示出优异的矩形度。 因此,可以看出Zr获得了独特的效果。 \n\n [0073] 接下来,将参考图2进行描述。 图2是样品1和样品4的磁性能如何随烧结温度变化的图。 图。 图2是将横轴依次表示烧结温度,将纵轴Hk / HcJ,矫顽力HcJ和剩磁Br按该顺序依次向下表示的图。 在该示例中用作平方度的指标的平方比Hk / HcJ中,Hk表示当磁化强度达到剩磁Br的90%时外部磁场的值。 从图1所示的曲线可以看出, 如图2所示,与没有添加样品的No.1的样品相比,添加Zr(如图2中的Δ所示)的No.4的样品中,导致良好的磁性能的烧结温度范围的上限提高了约20℃。 根本没有添加元素。 结果,即使将烧结温度设定为1,120℃(= 1,393 K),平方比仍大于0.9,表明4号样品具有优异的矩形度。 \n\n [0074] 接下来,将参考表2描述烧结温度与矩形度和异常晶粒生长之间的关系。在表2的尺寸(粒径)栏中,空心圆圈∘表示未发生异常晶粒生长,而○表示未发生异常晶粒生长。 十字×表示发生了异常的晶粒长大。 从表2可以看出,不包含添加元素的样品No.1在低至1100℃时引起异常晶粒生长,并且具有低的矩形比Hk / HcJ。 相反,包含添加剂Zr的4号样品即使在1,120℃下也没有引起异常晶粒生长,并且具有高达0.9以上的平方比。 另外,从2、3、5和6号样品的结果可以看出,其他每种添加元素(即Ti,V,Nb和Mo)均达到了抑制异常晶粒长大并保持晶粒长大的效果。 只要烧结温度达到1100℃,就可以得到高方比。但是,从1120℃的结果看,很明显它们的效果不如Zr获得的效果显着。 \n\n [0075] \n\n    表2  1,040°摄氏度 1,060°摄氏度 1,080°摄氏度 1100°C 1,120°摄氏度  样品 尺寸 k / H 尺寸 k / H 尺寸 k / H 尺寸 k / H 尺寸 k / H  1号 ∘ 0.966 ∘ 0.967 ∘ 0.965 x 0.880 x 0.086  2号 ∘ 0.977 ∘ 0.978 ∘ 0.975 ∘ 0.975 x 0.529  3号 ∘ 0.968 ∘ 0.961 ∘ 0.970 ∘ 0.962 x 0.871  4号 ∘ 0.972 ∘ 0.969 ∘ 0.972 ∘ 0.979 ∘ 0.908  5号 ∘ 0.974 ∘ 0.980 ∘ 0.972 ∘ 0.967 x 0.488  6号 ∘ 0.974 ∘ 0.982 ∘ 0.979 ∘ 0.975 x 0.307  图例:  在尺寸(粒径)中,○表示未发生异常晶粒长大,×表示发生了异常晶粒长大。 \n\n [0076] 接下来,参考图3至图4。 参照图3至图8,示出了在不同温度下烧结然后通过偏光显微镜观察的1号和4号样品的金相结构。 具体地,图1至图4。  3, 4  和 5  图1示出了分别在1,080℃,1,100℃和1,120℃下烧结的1号样品的外观。 另一方面,图2、3、4、5、5、7、8、10、13、13、28、28、28、28、28、28、31、28、31、28、31、32,...  6, 7  和 8  图4显示了分别在1,080℃,1,100℃和1,120℃下烧结的4号样品的外观。 \n\n [0077] 从图可以看出, 参照图3,如果在1080℃下烧结1号样品,则没有发现异常晶粒长大的迹象,但是观察到由细晶粒组成的良好的金相组织。 然而,如果烧结温度为1100℃,则如图2所示,已经观察到由异常晶粒生长产生的巨大结构。 并且,当将烧结温度提高到1,120℃时,如图4所示,观察到更大的巨型结构。  5, \n\n [0078] 另一方面,在具有添加剂Zr的4号样品中,如从图1和图2中可见,阻碍了异常晶粒的生长。 如图6至图8所示,即使烧结温度为1,120℃,实际上也未确认到巨型结构。  8。 \n\n [0079] 接下来,参考图3至图4。 在图9至图13中,示出了样品编号2至6(在1,040℃下烧结)的烧结磁体的背向散射电子图像(BEI),Nd和B的组成图像以及在其上的添加元素M的图像。 左上,右上,左下和右下部分分别由EPMA拍摄。 可以看出,没有发现B的累积相(即,没有偏析),也没有产生硼化物相,因为这些样品的每一个的B质量分数都低至0.95质量%。 也未发现仅以0.1质量%添加的添加元素M(其为Ti,V,Nb和Mo中的至少一种)的累积相。 但是,观察到原子量较小的Ti的偏析。 \n\n [0080] 从这些结果可以看出,如果B的质量分数小并且如果引入非常少量的添加元素M,则没有硼化物成核。 更重要的是,本发明人发现,即使不使任何硼化物成核,仍可以抑制异常晶粒生长,这与现有技术中应包含硼化物以阻止异常晶粒生长的现有技术相反。 \n\n [0081] 为了比较的目的,具有由31.3质量%的R(包括20.3质量%的Nd,6.0质量%的Pr和5.0质量%的Dy),0.90质量%的Co,0.20质量%的R组成的组成的烧结磁体。 还通过EPMA观察到Al,0.10质量%的Cu,0.07质量%的Zr,0.99质量%的B和Fe,并且不可避免地包含杂质作为余量。 所拍摄的照片在图2中示出。 从图14可以看出。 如图14所示,该含有高比例的B的烧结磁铁具有Zr和B的累积相。 \n\n [0082] 如上所述,根据本发明,通过将Zr添加到包含少量B的组合物中,可以在不产生任何硼化物相的情况下抑制异常晶粒生长。 因此,可以通过使矫顽力和主相的体积百分率的降低最小化来获得剩磁增加的R-T-B系烧结磁铁。 \n\n 实验例编号 2 \n\n [0083] 通过与实验例1中使用的方法相同的方法来制造具有下表3所示的组成的磁体。在该示例中,将大气中的氧气浓度控制为50ppm以下。 为了减少所得烧结磁体中的氧含量,进行粉碎过程。 在各种烧结温度下烧结以这种方式制备的这些样品No.7至20,从而获得了烧结磁体,其性能评估如下表4所示。在表4中,每个项目均按照实验例No.5进行了评估。 上述1。 \n\n [0084] \n\n    表3  样品 钕 铁 有限公司 Al Cu Zr 嘎 B O C N  7号 29.3 巴尔 0.88 0.16 0.09 — — 1.02 0.22 0.06 0.011  8号 29.4 巴尔 0.87 0.15 0.10 — — 0.98 0.21 0.05 0.010  9号 29.2 巴尔 0.88 0.15 0.09 — — 0.96 0.22 0.06 0.010  10号 29.2 巴尔 0.88 0.16 0.09 — — 0.94 0.22 0.06 0.011  11号 29.2 巴尔 0.89 0.16 0.10 — — 0.90 0.21 0.07 0.010  12号 29.3 巴尔 0.87 0.16 0.10 0.10 — 1.02 0.22 0.06 0.011  13号 29.2 巴尔 0.90 0.15 0.10 0.08 — 0.99 0.22 0.06 0.010  14号 29.1 巴尔 0.88 0.16 0.09 0.09 — 0.96 0.22 0.07 0.010  15号 29.2 巴尔 0.89 0.16 0.09 0.09 — 0.93 0.21 0.06 0.011  16号 29.2 巴尔 0.89 0.17 0.09 0.08 — 0.91 0.21 0.06 0.011  17号 29.3 巴尔 0.88 0.12 0.10 0.09 0.04 0.97 0.22 0.05 0.009  18号 29.3 巴尔 0.89 0.11 0.10 0.09 0.04 0.95 0.22 0.06 0.009  19号 29.2 巴尔 0.89 0.14 0.10 0.08 0.04 0.93 0.21 0.06 0.010  20号 29.3 巴尔 0.88 0.12 0.10 0.09 0.04 0.91 0.21 0.06 0.011  (单位:质量%) \n\n [0085] \n\n    表4  积累  相 1,020°摄氏度 1,040°摄氏度 1,060°摄氏度 1,080°摄氏度  样品 B Zr 尺寸 k / H 尺寸 k / H 尺寸 k / H 尺寸 k / H  7号 ∘ — ∘ 0.967 ∘ 0.970 ∘ 0.903 x 0.328  8号 ∘ — ∘ 0.970 ∘ 0.972 x 0.790 x 0.120  9号 ∘ — ∘ 0.968 ∘ 0.975 x 0.689 x 0.093  10号 x — ∘ 0.965 ∘ 0.973 ∘ 0.897 x 0.241  11号 x — ∘ 0.970 ∘ 0.973 x 0.648 x 0.109  12号 ∘ ∘* ∘ 0.968 ∘ 0.972 ∘ 0.972 ∘ 0.964  13号 ∘ ∘* ∘ 0.970 ∘ 0.975 ∘ 0.973 ∘ 0.953  14号 ∘ ∘* ∘ 0.972 ∘ 0.973 ∘ 0.971 ∘ 0.933  15号 x x ∘ 0.968 ∘ 0.973 ∘ 0.974 ∘ 0.940  16号 x x ∘ 0.968 ∘ 0.974 ∘ 0.974 ∘ 0.934  17号 ∘ ∘* ∘ 0.970 ∘ 0.974 ∘ 0.972 ∘ 0.935  18号 x x ∘ 0.969 ∘ 0.975 ∘ 0.973 ∘ 0.920  19号 x x ∘ 0.967 ∘ 0.973 ∘ 0.974 ∘ 0.915  20号 x x ∘ 0.968 ∘ 0.972 ∘ 0.973 ∘ 0.924  图例:  在累积相中,x表示未识别出累积相,∘表示已识别出累积相,*表示B和Zr的累积相共存。 尺寸(粒径)中,○表示未发生异常晶粒长大,×表示发生了异常晶粒长大。 \n\n [0086] 从表4所示的结果可以看出,无论是否存在B或Zr累积相,都发生了异常的晶粒长大。 还可以看出,无论是否存在Zr累积相,通过添加Zr,都可以抑制异常晶粒的生长。 \n\n [0087] 当在1,020℃下烧结时,这些样品的每一个的烧结密度为7.46 Mgm  −3 至7.49 Mgm  −3  ,这表明与大约7.55 Mgm的真实密度相比,样品的烧结程度略有不足  −3  。 另一方面,如果烧结温度在1,040℃至1,080℃的范围内,则每个样品的烧结密度达到7.54Mgm的范围。  −3 至7.57 Mgm  −3  。 因此,可以看出,1,020℃的烧结温度导致烧结不足并且剩余磁通量不可忽略。 \n\n [0088] 这就是为什么要避免异常晶粒长大并最大程度地减少平方比的降低,同时获得仅能使剩磁降低程度可忽略不计的烧结密度,对于第7号至第7号样品,1,040℃是唯一优选的烧结温度 11,未添加Zr。  7号样品的平方比为0.9以上,这也是不优选的,因为Hk和HcJ的值小。 同时,对于包含添加剂Zr的No.12至No.20的样品,即使在1,080℃的烧结温度下,异常晶粒生长和平方比的降低仍然最小,并且优选的烧结温度范围移至1,040℃。 样品温度为1到080℃,这比样品7到11的温度高。因此,样品12到样品20的制造可以比样品7到11更稳定。 \n\n [0089] 接下来,将参考图2进行描述。  15磁性能如何随B质量分数变化。 图。 图15是概述样品编号7至20的磁性能如何随B的质量分数变化的图,其中横坐标表示B质量分数,而纵坐标表示上半部的剩磁Br,而下半部表示矫顽力HcJ。 一半。 \n\n [0090] 从图可以看出, 参照图15,不包含Zr的样品编号7至11在B质量分数约为0.96质量%时具有剩磁峰。 这是因为一旦B质量分数超过约0.96质量%,则富B相(即Nd 1.1 铁 4 乙 4  复合相)(对磁性无贡献)增加。 然而,即使B质量分数超过约0.96质量%,矫顽力也不受富B相的影响,也不会降低。 \n\n [0091] 另一方面,如果B质量分数小于约0.96质量%,则不生成富B相,而是Nd。 2 铁 17  相成核。 这个钕 2 铁 17  相是软磁相(而主相是硬磁相)。 这就是为什么一旦钕 2 铁 17  相已成核,矫顽力急剧下降。 另外,由于主相的体积百分比由于Nd的成核而降低 2 铁 17  阶段,剩磁也降低。 \n\n [0092] 包含Zr的No.12至No.16的样品具有比No.7至No.11的样品更高的矫顽力。然而,如果B质量分数小于约0.96质量%,则其剩磁与No.7至No.11的样品一样急剧下降。 另一方面,一旦B质量分数超过约0.96质量%,则剩磁降低。 特别地,当B质量分数超过0.98质量%时,No.12至16的样品的剩磁的降低变得比不包含Zr的No.7至11的样品的剩磁更大。 这是因为,如果包含Zr的样品中的B过多,则ZrB等含Zr的硼化物相 2 ,Zr-Nd-B或Zr-Fe-B将成核。 就是说,可以看出,添加Zr通过抑制异常晶粒生长而间接地而非直接地改善了磁性能,但是在B质量分数超过0.98质量%的组成范围内,剩磁显着降低。  。 \n\n [0093] 在不仅添加Zr而且添加极少量(例如0.04质量%)的Ga的样品编号17至20中,在B质量分数小于0.96的组成范围内,剩磁和矫顽力降低。 可以消除质量%,并且使剩磁最大化的B质量分数范围基本上在低分数方向上扩展,从而实现具有宽的烧结温度范围和优异的磁性能的烧结磁体。 当B质量分数为0.95质量%以下时,不仅添加Zr,而且添加Ga而获得的这些效果是显着的。 \n\n [0094] 图。  B质量分数为0.90质量%以上时的结果示于图15。 然而,如果B质量分数至少等于0.85质量%,则通过组合添加Zr和Ga而获得的那些效果是显着的。 然而,如本实验例中所述,B质量分数优选为0.90质量%以上0.98质量%以下。 \n\n 实验例编号 3 \n\n [0095] 烧结磁铁,其组成为:Nd 22.0质量%,Pr 6.2质量%,Dy 2.0质量%,Co 1.8质量%,Cu 0.10质量%,B 0.94质量%,Ga 0.95质量%, 通过与实验例1相同的方法,在各种烧结温度下,生成Zr的X(0〜4)质量%,Fe和不可避免地含有杂质作为余量,并评价其磁特性。 在该实验例3中制造的烧结磁铁的氧含量为0.38质量%〜0.41质量%。 \n\n [0096] 图。 图16是示出在烧结温度分别为1,060℃和1,080℃的两种情况下磁性能如何随Zr的质量分数变化的图。 在图 在图16中,横坐标表示Zr质量分数,而纵坐标表示Hk(当磁化强度变为剩磁Br的90%时的外部磁场的强度),矫顽力HcJ和剩磁Br依次向下。 \n\n [0097] 从图可以看出, 如图16所示,即使Zr质量分数小至0.01质量%,只要烧结温度高,则矫顽力HcJ的改善效果仍然显着。 但是,一旦Zr质量分数超过0.3质量%,则剩磁Br急剧下降。 因此,可以看出,优选将Zr质量分数调整为0.3质量%以下。 \n\n [0098] 根据本发明,可以得到矫顽力的降低最小且剩磁增加的R-T-B系烧结磁铁。 根据本发明的稀土烧结磁体提供了宽的烧结温度裕度,并且可以在工业上不断地制造。 根据本发明的稀土烧结磁体可以特别有效地用于急需高性能的应用中,例如在各种类型的电动机和致动器中。');
INSERT INTO `os_patent_instruction_text` VALUES (13033, 22862, 'BACKGROUND ART \n\n[0001]An R-T-B based sintered magnet, one of the most prominent high-performance permanent magnets (which is sometimes called a \"neodymium-iron-boron-based sintered magnet\"), has excellent magnetic properties, and is used in motors, actuators, and various other applications.\n\n[0002]An R-T-B based sintered magnet is comprised of a main phase consisting essentially of a compound with an R 2 Fe 14 B type crystal structure (i.e., R 2 Fe 14 B compound phase), an R-rich phase and a B-rich phase. Basic compositions of R-T-B based sintered magnets are disclosed, for example, in United States Patents Nos. 4,770,723 and 4,792,368. An R-T-B based sintered magnet has a higher maximum energy product than any of various other magnets, but is expected to have its performance (in remanence, among other things) further improved. For instance, even just 1% increase in remanence should have an immense industrial value.\n\n[0003]To increase the remanence of a sintered magnet, the density of the sintered magnet (which will be sometimes referred to herein as a \"sintered density\") needs to be as close to its true density as possible. However, if the sintering process is carried out either at a higher temperature or for a longer time to increase the density of an R-T-B based sintered magnet, then the sintered density will increase but the crystal grains thereof will have excessively big sizes to cause a decrease in coercivity, which is a problem. Particularly if an \"abnormal grain growth\" occurred to produce giant crystal grains (main phases) locally, then the square ratio Hk/HcJ of the demagnetization curve would decrease so much as to cause various inconveniences when such a magnet is actually used.\n\n[0004]That is to say, in the prior art, it is difficult to increase the sintered density of an R-T-B based sintered magnet without sacrificing its coercivity. Also, even if sintering conditions that would contribute to striking an adequate balance in resultant performance could be found, their margins should be too narrow to manufacture R-T-B based sintered magnets with excellent performance constantly on an industrial basis.\n\n[0005]Japanese Patent Application Laid-Open Publications No. 61-295355 and No. 2002-75717 disclose techniques of suppressing the abnormal grain growth by nucleating a boride on a gain boundary with the addition of Ti, Zr or any other element that produces the boride. According to the methods disclosed in Japanese Patent Application Laid-Open Publications No. 61-295355 and No. 2002-75717, the sintered density can be increased with the excessive increase in crystal grain size avoided (i.e., with the decrease in coercivity minimized).\n\n[0006]According to the methods disclosed in Japanese Patent Application Laid-Open Publications No. 61-295355 and No. 2002-75717, however, a boride phase with no magnetic force (i.e., B-rich phase) is present in the sintered magnet, and the main phase that produces the magnetism (i.e. R 2 T 14 B type compound phase) has a decreased volume percentage, thus resulting in decreased remanence. EP 0 411 571 A2, US 5,405,455 and EP 0 576 055 A1 disclose rare earth magnets.\n\nDISCLOSURE OF INVENTION\n\n[0007]In order to overcome the problems described above, an object of the present invention is to provide an R-T-B based sintered magnet of which the remanence is increased by minimizing both the decrease in coercivity and the decrease in the volume percentage of its main phase. Accordingly, the present invention provides the subject matter as defined in claims 1 to 8.\n\n[0008]A rare-earth sintered magnet according to the present invention as defined in claim 1 of which the main phase includes an R 2 T 14 B type compound phase, includes 27 mass% through 32 mass% of R, which is at least one rare-earth element that is selected from the group consisting of Nd, Pr, Tb, and Dy and that always includes at least one of Nd and Pr; 60 mass% through 73 mass% of T, which is either Fe alone or a mixture of Fe and Co; 0.85 mass% through 0.98 mass% of Q, which is either B alone 20 or a mixture of B and C and which is converted into B on a number of atoms when its mass percentage is calculated; more than 0 mass% through 0.3 mass% of Zr; at most 2.0 mass% of an additive element M as defined in claim 1, which is at least one element selected from the group consisting of Al, Cu, Ga, In and Sn, and inevitably contained impurities.\n\n[0009]In one preferred embodiment, the magnet includes substantially no accumulated phases of Q.\n\n[0010]The additive element as defined herein includes Ga, which accounts for 0.01 mass% through 0.08 mass% of the magnet.\n\n[0011]In another preferred embodiment, the magnet includes at most 0.95 mass% of Q.\n\n[0012]In another preferred embodiment, the magnet includes at least 0.90 mass% of Q.\n\n[0013]In another preferred embodiment, the magnet has a square ratio Hk/HcJ of at least 0.9 in its demagnetization curve.\n\n[0014]A rare-earth alloy according to the present invention is a material alloy for a rare-earth sintered magnet, a main phase of which includes an R 2 T 14 B type compound phase. The alloy as defined in claim 6 includes: 27 mass through 32 mass% of R, which is at least one rare-earth element that is selected from the group consisting of Nd, Pr, Tb, and Dy and that always includes at least one of Nd and Pr; 60 mass through 73 mass% of T, which is either Fe alone or a mixture of Fe and Co; 0.85 mass% through 0.98 mass% of Q, which is either B alone or a mixture of B and C; more than 0 mass% through 0.3 mass% of Zr; at most 2.0 mass% of an additive element M as defined in claim 6, which is at least one element selected from the group consisting of Al, Cu, Ga, In and Sn; and inevitably contained impurities.\n\n[0015]In one preferred embodiment, the alloy includes substantially no accumulated phases of Q.\n\n[0016]The additive element as defined above includes Ga, which accounts for 0.01 mass% through 0.08 mass% of the alloy.\n\n[0017]In another preferred embodiment, the alloy includes at most 0.95 mass% of Q.\n\n[0018]According to the present invention, the abnormal grain growth can be suppressed without producing any boride phase. As a result, an R-T-B based sintered magnet can be obtained with the decreased in coercivity minimized and with the remanence increased.\n\nBRIEF DESCRIPTION OF DRAWINGS \n\n[0019] FIG. 1 is a graph showing the demagnetization curves of Samples Nos. 1 through 6. FIG. 2 is a graph showing how the magnetic properties of Samples Nos. 1 and 4 changed with the sintering temperature. FIG. 3 is a photograph showing the metallographic structure of Sample No. 1 that had been sintered at 1,080 °C and then looked at through a polarizing microscope. FIG. 4 is a photograph showing the metallographic structure of Sample No. 1 that had been sintered at 1,100 °C and then looked at through a polarizing microscope. FIG. 5 is a photograph showing the metallographic structure of Sample No. 1 that had been sintered at 1,120 °C and then looked at through a polarizing microscope. FIG. 6 is a photograph showing the metallographic structure of Sample No. 4 that had been sintered at 1,080 °C and then looked at through a polarizing microscope. FIG. 7 is a photograph showing the metallographic structure of Sample No. 4 that had been sintered at 1,100 °C and then looked at through a polarizing microscope. FIG. 8 is a photograph showing the metallographic structure of Sample No. 4 that had been sintered at 1,120 °C and then looked at through a polarizing microscope. FIG. 9 shows the backscattered electron image (BEI) of the sintered magnet of Sample No. 2, composition images of Nd and B, and the image of an additive element Ti on the upper left, upper right, lower left and lower right portions, respectively, all of which were taken with an EPMA. FIG. 10 shows the backscattered electron image (BEI) of the sintered magnet of Sample No. 3, composition images of Nd and B, and the image of an additive element V on the upper left, upper right, lower left and lower right portions, respectively, all of which were taken with an EPMA. FIG. 11 shows the backscattered electron image (BEI) of the sintered magnet of Sample No. 4, composition images of Nd and B, and the image of an additive element Zr on the upper left, upper right, lower left and lower right portions, respectively, all of which were taken with an EPMA. FIG. 12 shows the backscattered electron image (BEI) of the sintered magnet of Sample No. 5, composition images of Nd and B, and the image of an additive element Nb on the upper left, upper right, lower left and lower right portions, respectively, all of which were taken with an EPMA. FIG. 13 shows the backscattered electron image (BEI) of the sintered magnet of Sample No. 6, composition images of Nd and B, and the image of an additive element Mo on the upper left, upper right, lower left and lower right portions, respectively, all of which were taken with an EPMA. FIG. 14 shows the backscattered electron image (BEI) of the sintered magnet as a comparative sample, composition images of Nd and B, and the image of an additive element Zr on the upper left, upper right, lower left and lower right portions, respectively, all of which were taken with an EPMA. FIG. 15 is a graph summarizing how the magnetic properties of Samples Nos. 7 through 20 change with the mass fraction of B, where the abscissa represents the B mass fraction while the ordinate represents the remanence B r  in the upper half and the coercivity H cJ  in the lower half, respectively. FIG 16 is a graph showing how the magnetic properties changed with the mass fraction of Zr in two situations where the sintering temperature were 1,060 °C and 1.080 °C, respectively. \n\nBEST MODE FOR CARRYING OUT THE INVENTION\n\n[0020]The present inventors discovered that when 0.3 mass% or less of Zr was added to an R 2 Ti 4 B based rare earth sintered magnet including at most 0.98 mass% of B, the abnormal grain 10 growth could be suppressed without producing any boride phase, thus acquiring the basic idea of the present invention.\n\n[0021]An R 2 Ti 4 B based rare-earth sintered magnet according to a preferred embodiment of the present invention includes:\n\n[0022]27 mass% through 32 mass% of R, which is at least one rare earth element that is selected from the group consisting of Nd, Pr, Tb, and Dy and that always includes at least one of Nd and Pr; 60 mass% through 73 mass% of T, which is either Fe alone or a mixture of Fe and Co; 0.85 mass% through 0.98 mass% of B; more than 0 mass% through 0.3 mass% of Zr; at most 2.0 mass% of an additive element M as defined in the claims, which is at least one element selected from the group consisting of Al, Cu, Ga, In and Sn; and inevitably contained impurities.\n\n[0023]R is at least one rare-earth element that is selected from the group consisting of Nd, Pr, Dy and Tb and that always includes at least one of Nd and Pr. Preferably, a combination of rare-earth elements such as Nd-Dy, Nd-Tb, Nd-Pr-Dy or Nd-Pr-Tb is used. Among these rare-earth elements, Dy and Tb are particularly effective in increasing the coercivity. Also, R does not have to be a pure element but may include some impurities, which should be inevitably contained during every manufacturing process, as long as such a non-pure rare-earth element is easily available on an industrial basis. If the mass fraction of R were less than 27 mass%, high magnetic properties (or high coercivity among other things) could not be realized. However, if the mass fraction exceeded 32 mass%, then the remanence would decrease. That is why the mass fraction of R is preferably 27 mass% through 32 mass%.\n\n[0024]T always includes Fe, a portion (preferably, at most 50%) of which may be replaced with Co. T may also include small amounts of transition metal elements other than Fe and Co. The addition of Co is effective in improving the temperature characteristic and corrosion resistance. Normally, 10 mass% or less of Co and Fe as the balance are used in combination. If the mass fraction of T were less than 60 mass%, then the remanence would decrease. Nevertheless, if the mass fraction of T exceeded 73 mass%, then the coercivity would decrease. In view of these considerations, the mass fraction of T is preferably 60 mass% through 73 mass%.\n\n[0025]Zr is an essential element in the present invention. As will be described later by way of experimental examples, Zr achieves unique effects. Zr replaces rare-earth sites of the main phase, makes a solid solution, and slows down the crystal growth rate, thereby suppressing the abnormal grain growth. As disclosed in Japanese Patent Application Laid-Open Publications No. 61-295355 and No. 2002-75717, in the prior art, they believe that a boride is indispensable in order to suppress the abnormal grain growth. Contrary to this common knowledge in the prior art, the present inventors discovered that the abnormal grain growth could be suppressed even without nucleating any boride. Specifically, by adding Zr, the sintering process can be carried out even at a temperature and/or for an amount of time, which would cause the abnormal grain growth according to a conventional composition, without nucleating any boride phase that would decrease the remanence, and the sintered density can be increased while maintaining the microcrystalline structure. According to a preferred embodiment of the present invention, a magnet in which a main phase having a tetragonal R 2 T 14 B type crystal structure accounts for 90% or more of the overall volume and which includes substantially no B-rich phases (Q accumulated phase: R 1.1 Fe 4 B 4  phase, for example), can be obtained.\n\n[0026]As used herein, if the magnet \"includes substantially no B-rich phases\", it means that when randomly picked 10 or more portions of the magnet are observed with an EPMA, no Q accumulated structure is identified in 90% or more of those portions. Also, if \"no Q accumulated phase is identified\", then the total area of a portion where bright spots are concentrated (i.e., a portion attributed to an accumulated phase) is less than 5% of the overall vision of 100 µm×100 µm when the fluorescence x-rays (B-Kα) of born (B) are observed with an EPMA (e.g., EPM1610 produced by Shimadzu Corporation) under the conditions including an acceleration voltage of 15 kV, a beam diameter of 1 µm, a current value of 30 nA (measured with a Faraday cup) and spectral crystals of LSA200.\n\n[0027]However, once the Zr mass fraction exceeds 0.3 mass%, the remanence decreases. That is why the Zr mass fraction is preferably 0.3 mass% or less. Also, if there is an excessive amount of B, then a boride phase is produced. Accordingly, to minimize the production of such boride phases, the B mass fraction is set to 0.98 mass% or less. Furthermore, a portion of B may be replaced with C. When either B alone or a mixture of B and C is identified by Q, C that replaces a portion of B may be converted into B on a number of atoms basis when the mass percentage of Q is calculated.\n\n[0028]The additive element M is at least one element selected from the group consisting of Al, Cu, Ga, In and Sn. M is preferably added at 2.0 mass% or less. This is because the remanence decreases once the mass fraction of M exceeds 2.0 mass%.\n\n[0029]Among these additive elements, Ga may achieve unique effects. As will be described later by way of experimental examples, if the mass fraction of B (or Q) is low, then a soft magnetic R 2 T 17  compound may be produced to decrease coercivity and remanence in some cases. By adding an extremely small amount of Ga to such a composition range, the production of the soft magnetic phase is minimized, thus realizing a rare-earth sintered magnet that exhibits high coercivity and high remanence in a broad B mass fraction range. The present invention is particularly effective in a situation where B is added at 0.98 mass% or less to cut down the production of Zr borides.\n\n[0030]The effects achieved by adding Ga are noticeable if the mass fraction of B (or Q) is 0.95 mass% or less and 0.90 mass% or more. Also, if the Ga mass fraction is less than 0.01 mass%, those effects may not be achieved and it may be difficult to perform analytical control. Nevertheless, the Ga mass fraction should not exceed 0.08 mass% because the remanence B r  might drop at such a high Ga mass fraction.\n\n[0031]According to the present invention, not only the elements mentioned above but also other inevitably contained impurities may be included as well. Examples of those impurities include Mn and Cr coming from the material of Fe, Al and Si coming from Fe-B (ferroboron), and H, N and O that should be inevitably used in any manufacturing process.\n\n[0032]Also, the resultant sintered magnet preferably includes at most 0.5 mass% of oxygen, at most 0.2 mass% of nitrogen and at most 0.01 mass% of hydrogen. By setting the upper limits of these oxygen, nitrogen and hydrogen concentrations in this manner, the percentage of the main phase can be increased, whereby the remanence B r  can be increased.\n\n[0033]An R-T-B based sintered magnet according to a preferred embodiment of the present invention may be produced by a known method. For example, the magnet may be made by the following process.\n\n[0034]First, a melt of a mother alloy having a predetermined composition is prepared by an induction melting process, for example, and then cooled and solidified to make a (mother) alloy. The composition of the mother alloy is controlled such that the resultant rare-earth sintered magnet will have the composition described above. The (mother) alloy may be made by a known normal method. Among various methods of making an alloy, a rapid cooling process such as a strip casting process is used particularly effectively. According to a strip casting process, cast flakes with a thickness of about 0.1 mm to about 5 mm, for example, can be obtained.\n\n[0035]Optionally, a centrifugal casting process may be adopted instead of the rapid cooling process such as a strip casting process. Also, the alloy may be made by performing a direct reduction-diffusion process instead of the melting/alloying process step. Similar effects are achievable even if a solidified alloy, made by a non-rapid cooling process, is used as the mother alloy. Compared to a rapid cooling process such as a strip casting process, however, segregation would be produced more easily, and therefore, a Zr boride might nucleate in the alloy structure to make it difficult to add Zr efficiently. Furthermore, once such a Zr boride has nucleated, that Zr boride is hard to remove through a thermal treatment and will remain even after the sintering process. Accordingly, compared to a situation where the rapidly solidified alloy is used, a sintered magnet made from such a solidified alloy is more likely to have a main phase with a decreased volume percentage and may eventually have decreased remanence B r .\n\n[0036]The resultant alloy is pulverized by a known method to a mean particle size of 1 µm to 10 µm. Such an alloy powder is preferably obtained by performing two types of pulverization processes, namely, a coarse pulverization process and a fine pulverization process. The coarse pulverization may be done by a hydrogen decrepitation process or a mechanical grinding process using a disk mill, for example. On the other hand, the fine pulverization may be done by a mechanical grinding process using a jet mill, a ball mill or an attritor, for example.\n\n[0037]The finely pulverized powder obtained by the pulverization processes described above is compacted into any of various shapes by a known compacting technique. The compaction is normally carried out by compressing the powder under a magnetic field. Alternatively, after the powder has been aligned with a pulse magnetic field, the powder may be compacted under an isostatic pressure or within a rubber mold.\n\n[0038]To feed the powder more efficiently during the compaction process, make the green density more uniform, and release the compact from the mold more easily, a liquid lubricant such as a fatty acid ester or a solid lubricant such as zinc stearate may be added to the powder yet to be finely pulverized and/or the finely pulverized powder. The lubricant is preferably added in 0.01 to 5 parts by weight with respect to the alloy powder of 100 parts by weight.\n\n[0039]The green compact may be sintered by a known method. The sintering process is preferably carried out at a temperature of 1,000 °C to 1,180 °C for approximately one to six hours. An alloy according to a preferred embodiment of the present invention can be sintered at a higher temperature than a conventional alloy thanks to the addition of Zr. Thus, a sintering temperature of 1,100 °C or more, which is hard to adopt for mass production in the prior art considering possible variations in temperature, can be adopted according to the present invention. The sintered compact is subjected to a heat treatment (aging treatment) if necessary. The heat treatment is preferably carried out at a temperature of 400 °C to 600 °C for approximately one to eight hours.\n\n[0040]Hereinafter, the present invention will be described more fully by way of experimental examples.\n\nExperimental Example No. 1\n\n[0041]Magnets having the compositions shown in Table 1 were made in the following manner as Samples Nos. 1 through 6, respectively. It should be noted that the compositions shown in Table 1 are values obtained by analyzing the resultant sintered magnets, not the compositions of the mother alloys. The composition analysis was carried out by a known method using an ICP produced by Shimadzu Corporation and a gas analyzer produced by Horiba, Ltd.\n\n[0042]In Table 1, Fe is shown as the balance. Actually, however, the balance includes Fe and very small amounts of inevitably contained impurities. The same statement will apply to Table 3 to be mentioned later.\n\n[0043]In each of the samples representing this experimental example, the mass fraction of B substantially agrees with its stoichiometric ratio defined with respect to the mass fractions of R and T. Also, calculating the volume percentages of the respective phases with the additive element M taken out of consideration, the main phase (e.g., Nd 2 Fe 14 B compound phase) has a volume percentage of 94.4%, the R-rich phase has a volume percentage of 2.5%, the B-rich phase has a volume percentage of 0.1% and the R-oxide phase (Nd 2 O 3 ) has a volume percentage of 3.0%.\n\n[0044]A melt of a mother alloy with a predetermined composition was prepared and then subjected to a strip casting process, thereby making alloy cast flakes with thicknesses of about 0.2 mm to about 0.4 mm.\n\n[0045]The alloy cast flakes thus obtained were held within a hydrogen atmosphere at a normal temperature and under an absolute pressure of 0.2 MPa for two hours, thereby getting hydrogen absorbed into the alloy.\n\n[0046]Next, the hydrogen-absorbed alloy was held within a vacuum at about 600 °C for three hours and then cooled to room temperature.\n\n[0047]The resultant alloy had been broken due to hydrogen decrepitation. This alloy was sieved and crushed, thereby obtaining a coarsely pulverized powder with a particle size of 425 µm or less.\n\n[0048]Then, the coarsely pulverized powder obtained in this manner was finely pulverized within a nitrogen gas atmosphere using a jet mill pulverizer. In each of the samples, the powder had a mean particle size of 3.2 µm to 3.5 µm as measured by FSSS.\n\n[0049]A compact was made by pressing the powder thus obtained. In this case, the compaction process was carried out at a pressure of 196 MPa with a transverse magnetic field (orthogonal to the press direction) of about 1 T (tesla) applied thereto.\n\n[0050]The green compact thus obtained was sintered under various temperature conditions for approximately 2 hours, thereby making a sintered compact.\n\n[0051]The resultant sintered compact was subjected to an aging treatment within an Ar atmosphere at 550 °C for two hours, thereby obtaining each sample of the sintered magnet. Then, the magnetic properties of the magnet were evaluated.\n\n[0052]Thereafter, the magnet was further thermally demagnetized within an inert atmosphere at 400 °C and then subjected to a metallographic structure analysis and a chemical analysis. \n\nTable 1 \n\nSampleNdFeCoAlCuGaMBOCN\n\nNo. 129.5Bal.0.880.150.100.000.000.950.390.050.010\n\nNo. 229.7Bal.0.890.150.100.03Ti:0.100.950.400.050.008\n\nNo. 329.6Bal.0.880.160.100.03V:0.100.940.400.060.009\n\nNo. 429.6Bal.0.880.150.100.03Zr:0.100.950.380.050.008\n\nNo. 529.7Bal.0.900.150.100.03Nb:0.100.950.390.050.010\n\nNo. 629.7Bal.0.890.150.100.03Mo:0.100.950.390.060.010\n\n(unit: mass%)\n\n             \n\n[0053]FIG. 1 shows the demagnetization curves of the respective samples. In this case, each sample used was sintered at 1,120 °C for two hours.\n\n[0054]As is clear from the results shown in FIG. 1, Sample No. 1 including no additive element M showed very bad squareness. This is because the sintering temperature of 1,120 °C was too high for Sample No. 1 to avoid the abnormal grain growth as will be described later. Each of Samples Nos. 2, 3, 5 and 6, to which Ti, V, Nb and Mo were added as respective additive elements M, showed squareness that was better than Sample No. 1 but worse than Sample No. 4 to which Zr was added. The demagnetization curve of Sample No. 4 showed excellent squareness. Thus, it can be seen that Zr achieved unique effects.\n\n[0055]Next, it will be described with reference to FIG. 2 how the magnetic properties of Samples Nos. 1 and 4 changed with the sintering temperature. FIG. 2 is a graph of which the abscissa represents the sintering temperature and the ordinate represents the square ratio Hk/HcJ. coercivity H cJ  and remanence B r  in this order downward. In the square ratio Hk/HcJ used in this example as an index to squareness, Hk represents the value of an external magnetic field when the magnetization becomes 90% of the remanence B r . As can be seen from the graph shown in FIG. 2, the upper limit of the sintering temperature range resulting in good magnetic properties increased in Sample No. 4 with the additive Zr (as plotted with Δ. in FIG. 2) by about 20 °C as compared with Sample No. 1 including no additive elements at all. As a result, even if the sintering temperature was set to 1.120 °C (=1,393 K), the square ratio was still more than 0.9, showing that Sample No. 4 had excellent squareness.\n\n[0056]Next, the relationship between the sintering temperature and the squareness and abnormal grain growth will be described with reference to Table 2. In the size(particle size) columns of Table 2, the open circle ○ represents that no abnormal grain growth occurred, while the cross × represents that the abnormal grain growth occurred. As can be seen from Table 2, Sample No. 1 including no additive elements caused the abnormal grain growth at as low as 1,100 °C and had a low square ratio Hk/HcJ. In contrast, Sample No. 4 including an additive Zr caused no abnormal grain growth even at 1,120 °C and had a square ratio as high as 0.9 or more. Also, as can be seen from the results of Samples Nos. 2, 3, 5 and 6, each of the other additive elements (i.e., Ti, V, Nb and Mo) achieved the effects of suppressing the abnormal grain growth and maintaining a high square ratio as long as the sintering temperature was up to 1,100 °C. However, looking at the results at 1,120 °C, it is clear that their effects were not so significant as those achieved by Zr. \n\nTable 2 \n\nSample1,040 °C1,060 °C1,080 °C1,100 °C1,120 °C\n\nSizeHk/HcJSizeHk/HcJSizeHk/HcJSizeHk/HcJSizeHk/HcJ\n\nNo. 1○0.966○0.967○0.965×0.880×0.086\n\nNo. 2○0.977○0.978○0.975○0.975×0.529\n\nNo. 3○0.968○0.961○0.970○0.962×0.871\n\nNo. 4○0.972○0.969○0.972○0.979○0.908\n\nNo. 5○0.974○0.980○0.972○0.967×0.488\n\nNo. 6○0.974○0.982○0.979○0.975×0.307\n\nLegends: in size (particle size), ○ represents that no abnormal grain growth occurred and × represents that abnormal grain growth occurred.\n\n              \n\n[0057]Next, referring to FIGS. 3 through 8, shown are the metallographic structures of Samples Nos. 1 and 4, which were sintered at different temperatures and then looked at through a polarizing microscope. Specifically, FIGS. 3, 4 and 5 show how Sample No. 1 looked like after having been sintered at 1,080 °C, 1,100 °C and 1,120 °C, respectively. On the other hand, FIGS. 6, 7 and 8 show how Sample No. 4 looked like after having been sintered at 1,080 °C, 1,100 °C and 1,120 °C, respectively.\n\n[0058]As can be seen from FIG. 3, if Sample No. 1 was sintered at 1,080 °C, no sign of abnormal grain growth was recognized but a good metallographic structure consisting of fine crystal grains was observed. If the sintering temperature was 1,100 °C, however, a giant structure, produced by the abnormal grain growth, was already observed as can be seen from FIG. 4. And when the sintering temperature was raised to 1,120 °C, a lot more giant structure was observed as shown in FIG. 5.\n\n[0059]In Sample No. 4 with an additive Zr on the other hand, the abnormal grain growth was hindered as can be seen from FIGS. 6 through 8. Even if the sintering temperature was 1,120 °C, virtually no giant structure was identified as shown in FIG. 8.\n\n[0060]Next, referring to FIGS. 9 to 13, shown are the backscattered electron images (BEI) of the sintered magnets of Samples Nos. 2 through 6 (which were sintered at 1,040 °C), composition images of Nd and B, and the images of additive elements M on the upper left, upper right, lower left and lower right portions, respectively, all of which were taken with an EPMA. It can be seen that no accumulated phase (i.e., no segregation) of B was identified and no boride phase had been produced because each of these samples had a B mass fraction as low as 0.95 mass%. No accumulated phase of the additive element M (which is at least one of Ti, V, Nb and Mo) added at just 0.1 mass% was identified, either. However, segregation of Ti with a relatively small atomic weight was observed a little.\n\n[0061]As can be seen from these results, no boride nucleates if the mass fraction of B is small and if a very small amount of additive element M is introduced. More importantly, the present inventors discovered that even without nucleating any boride, the abnormal grain growth could still be suppressed contrary to the common knowledge in the prior art that a boride should be included to impede the abnormal grain growth.\n\n[0062]For the purpose of comparison, a sintered magnet having a composition consisting of 31.3 mass% of R (including 20.3 mass% of Nd, 6.0 mass% of Pr and 5.0 mass% of Dy), 0.90 mass% of Co, 0.20 mass% of Al, 0.10 mass% of Cu, 0.07 mass% of Zr, 0.99 mass% of B, and Fe and inevitably contained impurities as the balance was also observed with an EPMA. The photos taken are shown in FIG. 14. As can be seen from FIG. 14, this sintered magnet including B at a high percentage had accumulated phases of Zr and B.\n\n[0063]As described above, according to the present invention, by adding Zr to a composition including a small amount of B, the abnormal grain growth can be suppressed without producing any boride phase. Thus, an R-T-B based sintered magnet with increased remanence can be obtained by minimizing decreases in coercivity and the volume percentage of the main phase.\n\nExperimental Example No. 2\n\n[0064]Magnets having the compositions shown in the following Table 3 were produced by the same method as that used in Experimental Example No. 1. In this example, however, the concentration of oxygen in the atmospheric gas was controlled to 50 ppm or less in the fine pulverization process in order to reduce the content of oxygen in the resultant sintered magnet. These samples Nos. 7 through 20 prepared in this manner were sintered at various sintering temperatures, thereby obtaining sintered magnets, of which the properties were evaluated as shown in the following Table 4. In Table 4, each item was evaluated as in Experimental Example No. 1 described above. \n\nTable 3 \n\nSampleNdFeCoAlCuZrGaBOCN\n\nNo.729.3Bal.0.880.160.09--1.020.220.060.011\n\nNo.829.4Bal.0.870.150.10--0.980.210.050.010\n\nNo.929.2Bal.0.880.150.09--0.960.220.060.010\n\nNo.1029.2Bal.0.880.160.09--0.940.220.060.011\n\nNo.1129.2Bal.0.890.160.10--0.900.210.070.010\n\nNo.1229.3Bal.0.870.160.100.10-1.020.220.060.011\n\nNo.1329.2Bal.0.900.150.100.08-0.990.220.060.010\n\nNo.1429.1Bal.0.880.160.090.09-0.960.220.070.010\n\nNo.1529.2Bal.0.890.160.090.09-0.930.210.060.011\n\nNo.1629.2Bal.0.890.170.090.08-0.910.210.060.011\n\nNo.1729.3Bal.0.880.120.100.090.040.970.220.050.009\n\nNo.1829.3Bal.0.890.110.100.090.040.950.220.06', '背景技术 \n\n [0001] 基于RTB的烧结磁体是最杰出的高性能永磁体之一(有时也称为“钕铁硼基烧结磁体”),具有出色的磁性能,可用于电机,执行器和各种 其他应用程序。 \n\n [0002] 基于R-T-B的烧结磁体由主要由具有R 2 Fe 14 B型晶体结构的化合物(即,R 2 Fe 14 B化合物相),富R相和富B相组成的主相组成。 基于R-T-B的烧结磁体的基本组成例如在美国专利号4,770,723和4,792,368中公开。 基于R-T-B的烧结磁体具有比各种其他磁体中的任何一种更高的最大能量乘积,但是期望其性能(除其他方面之外)进一步提高。 例如,即使剩磁仅增加1%,也具有巨大的工业价值。 \n\n [0003] 为了增加烧结磁体的剩磁,烧结磁体的密度(在本文中有时将其称为“烧结密度”)需要尽可能接近其真实密度。 但是,如果为了提高RTB系烧结磁铁的密度而在更高温度或更长时间内进行烧结处理,则烧结密度会增加,但晶粒过大而导致晶粒下降。 在矫顽力方面,这是一个问题。 特别是,如果发生“异常晶粒生长”而局部产生巨晶粒(主相),则退磁曲线的平方比Hk / HcJ将降低太多,从而在实际使用这种磁体时引起各种不便。 \n\n [0004] 也就是说,在现有技术中,难以在不牺牲其矫顽力的情况下提高R-T-B类烧结磁体的烧结密度。 另外,即使可以找到有助于达到最终性能的适当平衡的烧结条件,其裕度也应该太窄以至于不能在工业基础上连续制造具有优异性能的R-T-B基烧结磁体。 \n\n [0005] 日本专利申请公开第61-295355号和第2002-75717号公开了通过添加Ti,Zr或产生硼化物的任何其他元素使硼化物在增益边界上成核来抑制异常晶粒生长的技术。 根据日本专利申请公开第61-295355号和第2002-75717号中公开的方法,可以在避免过度增大晶粒尺寸的情况下(即,将矫顽力的降低最小化)来提高烧结密度。  。 \n\n [0006] 然而,根据日本专利申请公开第61-295355号和第2002-75717号中公开的方法,在烧结磁体中存在没有磁力的硼化物相(即富B相),并且 产生磁性的主相(即R 2 T 14 B型复合相)的体积百分数减小,从而剩磁降低。  EP 0 411 571 A2,US 5,405,455和EP 0 576 055 A1公开了稀土磁体。 \n\n  发明内容 \n\n [0007] 为了克服上述问题,本发明的目的是提供一种R-T-B基烧结磁体,其通过使矫顽力的降低和主相的体积百分比的降低最小化来增加剩磁。 因此,本发明提供了权利要求1至8所限定的主题。 \n\n [0008] 2.根据权利要求1所述的稀土烧结磁体,其中,所述主相包括R 2 T 14 B型化合物相,所述R 2 T 14 B型化合物相包含27质量%〜32质量%的R,所述R 2为至少一种稀土元素。 选自Nd,Pr,Tb和Dy且总是包含Nd和Pr中的至少一种的土元素;  T为60质量%至73质量%,T可以是单独的Fe或Fe和Co的混合物;  Q的0.85质量%〜0.98质量%,Q是单独的B 20或B和C的混合物,并且在计算质量百分数时在多个原子上转化为B;  Zr的0质量%以上0.3质量%以上;  2.如权利要求1所述的添加元素M,最多为2.0质量%,所述添加元素M是选自Al,Cu,Ga,In和Sn中的至少一种元素,不可避免地含有杂质。 \n\n [0009] 在一优选实施例中,磁体基本上不包括Q的累积相。 \n\n [0010] 如本文所定义的添加元素包括Ga,其占磁体的0.01质量%至0.08质量%。 \n\n [0011] 在另一个优选的实施方案中,磁体包含至多0.95质量%的Q。 \n\n [0012] 在另一个优选的实施方案中,磁体包括至少0.90质量%的Q。 \n\n [0013] 在另一个优选实施例中,磁体在其退磁曲线中具有至少0.9的平方比Hk / HcJ。 \n\n [0014] 根据本发明的稀土合金是用于稀土烧结磁体的材料合金,其主相包括R 2 T 14 B型化合物相。  7.根据权利要求6所述的合金,其中,R的含量为27〜32质量%,R是选自Nd,Pr,Tb,Dy中的至少一种稀土元素,且总是含有至少一种。 钕和Pr  T为60质量%至73质量%,T可以是单独的Fe或Fe和Co的混合物;  Q为0.85质量%至0.98质量%,Q可以是单独的B或B和C的混合物;  Zr的0质量%以上0.3质量%以上;  7.根据权利要求6所述的添加元素M,最多为2.0质量%,所述添加元素M是选自Al,Cu,Ga,In和Sn中的至少一种元素。 不可避免地含有杂质。 \n\n [0015] 在一个优选的实施方案中,合金基本上不包含Q的累积相。 \n\n [0016] 如上定义的添加元素包括Ga,其占合金的0.01质量%至0.08质量%。 \n\n [0017] 在另一个优选的实施方式中,合金包含至多0.95质量%的Q。 \n\n [0018] 根据本发明,可以在不产生任何硼化物相的情况下抑制异常晶粒生长。 结果,可以得到使矫顽力的降低最小化,剩磁增加的R-T-B系烧结磁铁。 \n\n  附图说明 \n\n [0019]  图。  1个  图1是样品1至6的退磁曲线。  图。  2  图1是表示试样编号1和试样编号4的磁性随烧结温度变化的曲线图。  图。  3  图1是显示在1080℃下烧结然后通过偏光显微镜观察的1号样品的金相组织的照片。  图。  4  图1是示出在1100℃下烧结然后通过偏光显微镜观察的1号样品的金相组织的照片。  图。  5  图1是示出在1120℃下烧结然后通过偏光显微镜观察的1号样品的金相组织的照片。  图。  6  图1是示出在1080℃下烧结然后通过偏光显微镜观察的4号样品的金相组织的照片。  图。  7  图1是示出在1100℃下烧结然后通过偏光显微镜观察的4号样品的金相组织的照片。  图。  8  图1是示出在1120℃下烧结然后通过偏光显微镜观察的4号样品的金相组织的照片。  图。  9  图2分别示出样品2的烧结磁体的背向散射电子图像(BEI),Nd和B的组成图像,以及在左上,右上,左下和右下部分的添加元素Ti的图像, 所有这些都是用EPMA拍摄的。  图。  10 图3分别示出样品3的烧结磁体的背散射​​电子图像(BEI),Nd和B的组成图像以及左,右上,左下和右下部分的添加元素V的图像, 所有这些都是用EPMA拍摄的。  图。  11  图4分别示出样品4的烧结磁体的背散射​​电子图像(BEI),Nd和B的组成图像,以及左上,右上,左下和右下部分的添加元素Zr的图像, 所有这些都是用EPMA拍摄的。  图。  12  图5分别示出样品5的烧结磁体的背散射​​电子图像(BEI),Nd和B的组成图像,以及左上,右上,左下和右下部分的添加元素Nb的图像, 所有这些都是用EPMA拍摄的。  图。  13  图6分别示出样品6的烧结磁体的背散射​​电子图像(BEI),Nd和B的组成图像,以及左上,右上,左下和右下部分的添加元素Mo的图像, 所有这些都是用EPMA拍摄的。  图。  14  分别显示了作为比较样品的烧结磁体的背向散射电子图像(BEI),Nd和B的成分图像以及左上,右上,左下和右下部分的添加元素Zr的图像 其中使用EPMA拍摄。  图。  15  是一个曲线图,概述了7号至20号样品的磁性能如何随B的质量分数变化,其中横坐标表示B的质量分数,而纵坐标表示上半部分的剩磁B r和矫顽力H cJ。 下半部分别。  图16  图2是表示在烧结温度分别为1060℃和1.080℃的两种情况下磁性能如何随Zr的质量分数变化的图。 \n\n  实施本发明的最佳模式 \n\n [0020] 本发明人发现,当向含有最多0.98质量%的B的R 2 Ti 4 B类稀土类烧结磁铁中添加0.3质量%以下的Zr时,可以不产生硼化物相而抑制异常晶粒10的生长。 从而获得了本发明的基本思想。 \n\n [0021] 根据本发明的优选实施方式的R 2 Ti 4 B基稀土烧结磁体包括: \n\n [0022] R为27质量%以上32质量%以下的R,该R为选自Nd,Pr,Tb,Dy中的至少一种稀土元素,且总是含有Nd和Pr中的至少一种。  T为60质量%至73质量%,T可以是单独的Fe或Fe和Co的混合物;  B为0.85质量%〜0.98质量%。  Zr的0质量%以上0.3质量%以上;  7.如权利要求1所述的添加元素M的至多2.0质量%,所述添加元素M是选自Al,Cu,Ga,In和Sn中的至少一种元素; 不可避免地含有杂质。 \n\n [0023] R是选自由Nd,Pr,Dy和Tb组成的组中的至少一种稀土元素,并且其总是包括Nd和Pr中的至少一种。 优选地,使用诸如Nd-Dy,Nd-Tb,Nd-Pr-Dy或Nd-Pr-Tb的稀土元素的组合。 在这些稀土元素中,Dy和Tb对提高矫顽力特别有效。 另外,R不必是纯元素,而可以包含一些杂质,只要在工业上容易获得这种非纯稀土元素,在每个制造过程中就不可避免地要包含这些杂质。 如果R的质量分数小于27质量%,则不能实现高磁性能(或除其他以外的高矫顽力)。 然而,如果质量分数超过32质量%,则剩磁将降低。 因此,R的质量分数优选为27质量%〜32质量%。 \n\n [0024] T总是包含Fe,其一部分(优选至多50%)可以被Co替代。T还可以包含除Fe和Co以外的少量过渡金属元素。添加Co对改善温度特性是有效的。 和耐腐蚀性。 通常,将余量的10质量%以下的Co和Fe组合使用。 如果T的质量分数小于60质量%,则剩磁将降低。 然而,如果T的质量分数超过73质量%,则矫顽力将降低。 考虑到这些考虑,T的质量分数优选为60质量%至73质量%。 \n\n [0025] Zr是本发明中必不可少的元素。 如稍后将通过实验示例所述,Zr实现了独特的效果。  Zr置换主相的稀土部位,固溶,减慢晶体的生长速度,从而抑制异常晶粒的生长。 如在日本专利申请公开第61-295355号和第2002-75717号中所公开的,在现有技术中,他们认为,为了抑制异常晶粒生长,硼化物是必不可少的。 与现有技术中的常识相反,本发明人发现即使不使任何硼化物成核也可以抑制异常晶粒生长。 具体地,通过添加Zr,即使在根据常规组成将导致异常晶粒生长的温度和/或时间量下也可以执行烧结过程,而不会使会降低剩磁的任何硼化物相成核, 并且可以在保持微晶结构的同时提高烧结密度。 根据本发明的一个优选实施例,一种磁体,其中具有四方R 2 T 14 B型晶体结构的主相占总体积的90%以上,并且基本上不包括富B相(Q 相:例如,可以得到R 1.1 Fe 4 B 4相。 \n\n [0026] 如本文所用,如果磁体“基本上不包括富B相”,则意味着当用EPMA观察到磁体的随机选取的10个或更多部分时,在这些部分的90%或更多中未发现Q积累结构。  。 另外,如果“未识别出Q累积相”,则亮点集中的部分(即,归因于累积相的部分)的总面积小于100的总视野的5%。  μ m×100  μ 当用EPMA(例如Shimadzu Corporation生产的EPM1610)在15 kV的加速电压,光束直径为1的条件下观察出生的(B)的荧光X射线(B-Kα)时  μ m,电流值为30 nA(用法拉第杯测量)和LSA200的光谱晶体。 \n\n [0027] 但是,一旦Zr质量分数超过0.3质量%,则剩磁降低。 因此,Zr质量分数优选为0.3质量%以下。 另外,如果存在过量的B,则产生硼化物相。 因此,为了使这种硼化物相的产生最小化,将B质量分数设定为0.98质量%以下。 此外,B的一部分可以用C代替。当单独的B或B与C的混合物用Q标识时,当质量百分比为B时,取代B的一部分的C可以基于原子数转换为B  Q的计算。 \n\n [0028] 附加元素M是选自Al,Cu,Ga,In和Sn中的至少一种元素。  M优选以2.0质量%以下添加。 这是因为,一旦M的质量分数超过2.0质量%,则剩磁降低。 \n\n [0029] 在这些添加元素中,Ga可以实现独特的效果。 如将在后面通过实验示例描述的那样,如果B(或Q)的质量分数低,则在某些情况下可产生软磁R 2 T 17化合物以降低矫顽力和剩磁。 通过在该组成范围内添加极少量的Ga,软磁相的产生最小化,从而实现了在宽的B质量分数范围内显示高矫顽力和高剩磁的稀土类烧结磁体。 本发明在以0.98质量%以下添加B以减少硼化锆的产生的情况下特别有效。 \n\n [0030] 如果B(或Q)的质量分数为0.95质量%以下且0.90质量%以上,则通过添加Ga而获得的效果显着。 另外,如果Ga质量分数小于0.01质量%,则可能无法获得这些效果,并且可能难以进行分析控制。 然而,Ga的质量分数不应超过0.08质量%,因为在如此高的Ga的质量分数下剩磁B r可能下降。 \n\n [0031] 根据本发明,不仅可以包括上述元素,而且还可以包括其他不可避免地包含的杂质。 这些杂质的例子包括来自Fe的材料的Mn和Cr,来自Fe-B(铁硼烷)的Al和Si,以及在任何制造过程中都不可避免地使用的H,N和O。 \n\n [0032] 另外,所得烧结磁体优选包含至多0.5质量%的氧,至多0.2质量%的氮和至多0.01质量%的氢。 通过以这种方式设定这些氧,氮和氢浓度的上限,可以增加主相的百分比,从而可以增加剩磁B r。 \n\n [0033] 根据本发明的优选实施方式的基于R-T-B的烧结磁体可以通过已知的方法来制造。 例如,可以通过以下过程来制造磁体。 \n\n [0034] 首先,例如通过感应熔融法制备具有预定组成的母合金的熔体,然后冷却并固化以制备(母)合金。 控制母合金的组成,使得所得的稀土烧结磁体将具有上述组成。  (母)合金可以通过公知的通常方法来制造。 在各种制造合金的方法中,特别有效地使用快速冷却工艺,例如带钢铸造工艺。 根据带钢铸造工艺,可以获得例如厚度为约0.1mm至约5mm的铸造薄片。 \n\n [0035] 可选地,可以采用离心铸造工艺代替诸如带钢铸造工艺的快速冷却工艺。 另外,可以通过执行直接的还原扩散工艺而不是熔融/合金化工艺步骤来制造合金。 即使将通过非快速冷却工艺制成的凝固合金用作母合金,也可以获得类似的效果。 然而,与诸如带钢铸造工艺的快速冷却工艺相比,偏析会更容易产生,因此,硼化锆可能会在合金结构中成核,从而难以有效地添加锆。 此外,一旦这种Zr硼化物成核,则该Zr硼化物难以通过热处理除去,甚至在烧结过程之后也将残留。 因此,与使用快速凝固的合金的情况相比,由这种凝固的合金制成的烧结磁体更可能具有具有减小的体积百分比的主相,并且最终可能具有减小的剩磁B r。 \n\n [0036] 通过已知方法将所得合金粉碎至平均粒径为1  μ 米到10  μ 米 这样的合金粉末优选通过进行两种类型的粉碎处理,即粗粉碎处理和细粉碎处理而获得。 粗粉碎可通过例如氢破碎法或使用盘磨机的机械研磨法进行。 另一方面,细粉碎可以通过例如使用喷射磨,球磨机或磨碎机的机械研磨工艺来进行。 \n\n [0037] 通过已知的压紧技术将通过上述粉碎过程获得的细粉碎的粉末压制成各种形状。 通常通过在磁场下压缩粉末来进行压实。 可替代地,在粉末已经与脉冲磁场对准之后,可以在等静压力下或在橡胶模具内将粉末压实。 \n\n [0038] 为了在压实过程中更有效地进料粉末,使生坯密度更均匀,并更容易从模具中释放压块,可以将液体润滑剂(例如脂肪酸酯)或固体润滑剂(例如硬脂酸锌)添加到模具中。 尚未细粉碎的粉末和/或细粉碎的粉末。 相对于100重量份的合金粉末,优选添加0.01至5重量份的润滑剂。 \n\n [0039] 可以通过已知方法烧结生坯。 烧结过程优选在1,000℃至1,180℃的温度下进行约1至6小时。 由于添加了Zr,可以在比常规合金更高的温度下烧结根据本发明的优选实施方式的合金。 因此,根据本发明,可以采用在现有技术中难以用于批量生产的1100℃或更高的烧结温度。 如果需要,对烧结体进行热处理(时效处理)。 热处理优选在400℃至600℃的温度下进行约1至8小时。 \n\n [0040] 在下文中,将通过实验实施例更全面地描述本发明。 \n\n  实验例1 \n\n [0041] 具有表1所示组成的磁体分别以下列方式制成样品编号1至6。 应当指出,表1中所示的组成是通过分析所得烧结磁体获得的值,而不是母合金的组成。 使用Shimadzu Corporation生产的ICP和Horiba,Ltd生产的气体分析仪通过已知方法进行组成分析。 \n\n [0042] 在表1中,Fe显示为余量。 然而,实际上,余量包括Fe和极少量不可避免地包含的杂质。 相同的陈述将适用于稍后将提及的表3。 \n\n [0043] 在代表该实验示例的每个样品中,B的质量分数与相对于R和T的质量分数定义的化学计量比基本一致。此外,在取出添加元素M的情况下计算各相的体积百分比 考虑到,主相(例如,Nd 2 Fe 14 B化合物相)的体积百分比为94.4%,富R相的体积百分比为2.5%,富B相的体积百分比为0.1%  R-氧化物相(Nd 2 O 3)的体积百分比为3.0%。 \n\n [0044] 制备具有预定组成的母合金的熔体,然后进行带式铸造工艺,从而制成厚度为约0.2mm至约0.4mm的合金铸造薄片。 \n\n [0045] 将如此获得的合金铸造薄片在常温和0.2MPa的绝对压力下在氢气氛中保持两个小时,从而使氢吸收到合金中。 \n\n [0046] 接下来,将吸氢合金在约600℃的真空中保持3小时,然后冷却至室温。 \n\n [0047] 所产生的合金由于氢爆裂而破裂。 将该合金过筛并压碎,从而获得粒度为425的粗粉碎粉末。  μ 米或更少。 \n\n [0048] 然后,使用喷射式粉碎机在氮气气氛中将以这种方式获得的粗粉碎粉末进行细粉碎。 在每个样品中,粉末的平均粒径为3.2  μ 米至3.5  μ m由FSSS测量。 \n\n [0049] 通过压制由此获得的粉末制成压块。 在这种情况下,在196MPa的压力下施加约1T(特斯拉)的横向磁场(垂直于压制方向)进行压实处理。 \n\n [0050] 在各种温度条件下将由此获得的生压坯烧结约2小时,从而制成烧结体。 \n\n [0051] 将得到的烧结体在550℃的Ar气氛中进行2小时的时效处理,得到烧结磁体的各样品。 然后,评估磁体的磁性能。 \n\n [0052] 之后,将磁体在惰性气氛中在400℃下进一步热消磁,然后进行金相结构分析和化学分析。 \n\n  表格1 \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n     样品 钕 铁 有限公司AlCu 嘎MBOCN  1号29.5 巴尔0.880.150.100.000.000.950.390.050.010  2号29.7 巴尔0.890.150.100.03 钛:0.100.950.400.050.008  3号29.6 巴尔0.880.160.100.03 V:0.100.940.400.060.009  4号29.6 巴尔0.880.150.100.03 锆:0.100.950.380.050.008  5号29.7 巴尔0.900.150.100.03 铌:0.100.950.390.050.010  6号29.7 巴尔0.890.150.100.03 莫:0.100.950.390.060.010  (单位:质量%)  \n\n [0053]  图。  1个  显示了各个样品的退磁曲线。 在这种情况下,将使用的每个样品在1,120°C的温度下烧结两个小时。 \n\n [0054] 从结果可以明显看出  图。  1个 ,不包含添加元素M的1号样品显示出非常差的矩形度。 这是因为1,120℃的烧结温度对于1号样品而言太高而不能避免如后所述的异常晶粒生长。 分别添加了Ti,V,Nb和Mo作为添加元素M的2号,3号,5号和6号样品的矩形度均优于1号样品,但比Zr差的4号样品差 加入。  4号样品的退磁曲线显示出优异的矩形度。 因此,可以看出Zr获得了独特的效果。 \n\n [0055] 接下来,将参考以下内容进行描述。  图。  2  1号和4号样品的磁性能如何随烧结温度变化。  图。  2  图5的曲线图的横坐标为烧结温度,纵坐标为平方比Hk / HcJ。 矫顽力H cJ和剩磁B r依次下降。 在该示例中用作平方度的指标的平方比Hk / HcJ中,Hk表示当磁化强度变为剩磁B r的90%时外部磁场的值。 从图中的图表可以看出  图。  2 ,在具有添加剂Zr的4号样品中,导致良好磁性能的烧结温度范围的上限(如Δ。  图。  2 与不含任何添加元素的1号样品相比,温度降低了约20°C。 结果,即使将烧结温度设定为1.120℃(= 1393K),平方比仍大于0.9,表明4号样品具有优异的矩形度。 \n\n [0056] 接下来,将参考表2描述烧结温度与矩形度和异常晶粒生长之间的关系。在表2的尺寸(粒径)栏中,空心圆○表示未发生异常晶粒生长,而○表示未发生异常晶粒生长。 十字×表示发生异常晶粒长大。 从表2可以看出,不包含添加元素的1号样品在低至1100℃时引起异常晶粒生长,并且具有低的矩形比Hk / HcJ。 相反,包含添加剂Zr的4号样品即使在1,120℃也没有引起异常晶粒生长,并且具有高达0.9以上的平方比。 另外,从2、3、5和6号样品的结果可以看出,其他每种添加元素(即Ti,V,Nb和Mo)均达到了抑制异常晶粒长大并保持晶粒长大的效果。 只要烧结温度达到1100°C,就可以保持较高的平方比。 但是,从1,120°C的温度来看,很明显它们的作用并不像Zr那样重要。 \n\n  表2 \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n     样品 1,040°摄氏度 1,060°摄氏度 1,080°摄氏度 1100度 1,120°摄氏度  尺寸 k / H 尺寸 k / H 尺寸 k / H 尺寸 k / H 尺寸 k / H  1号 ○0.966 ○0.967 ○0.965 ×0.880 ×0.086  2号 ○0.977 ○0.978 ○0.975 ○0.975 ×0.529  3号 ○0.968 ○0.961 ○0.970 ○0.962 ×0.871  4号 ○0.972 ○0.969 ○0.972 ○0.979 ○0.908  5号 ○0.974 ○0.980 ○0.972 ○0.967 ×0.488  6号 ○0.974 ○0.982 ○0.979 ○0.975 ×0.307  图例:尺寸(粒径)中,○表示未发生异常晶粒长大,×表示发生了异常晶粒长大。  \n\n [0057] 接下来,参考  无花果 3至8 图1所示为样品1和4的金相结构,它们在不同温度下烧结,然后通过偏光显微镜观察。 特别,  无花果 3 4  和 5  展示了分别在1,080°C,1,100°C和1,120°C下烧结的1号样品的外观。 另一方面,  无花果 6 ,  7和8  展示了分别在1,080°C,1,100°C和1,120°C下烧结的4号样品的外观。 \n\n [0058] 从中可以看出  图。  3 ,如果在1080℃下烧结1号样品,则没有发现异常晶粒长大的迹象,但是观察到由细晶粒组成的良好的金相组织。 但是,如果烧结温度为1100℃,则可以观察到由异常晶粒生长产生的巨大结构。  图。  4 。 而且,当烧结温度升至1,120°C时,观察到的巨幅结构如图所示。  图。  5 。 \n\n [0059] 另一方面,在添加了Zr的4号样品中,从图5可知,阻碍了晶粒的异常生长。  无花果 6至8 。 即使烧结温度为1,120°C,实际上也没有发现巨型结构,如图所示。  图。  8 。 \n\n [0060] 接下来,参考  无花果 9至13 图中显示了2号至6号样品(在1,040°C的温度下烧结)的烧结磁体的反向散射电子图像(BEI),Nd和B的组成图像以及左上方的添加元素M的图像, 右上,左下和右下部分,所有这些均由EPMA拍摄。 可以看出,没有发现B的累积相(即,没有偏析),也没有产生硼化物相,因为这些样品中的每一个的B质量分数都低至0.95质量%。 也没有发现仅以0.1质量%添加的添加元素M(其为Ti,V,Nb和Mo中的至少一种)的累积相。 但是,观察到原子量相对较小的Ti的偏析。 \n\n [0061] 从这些结果可以看出,如果B的质量分数小并且如果引入非常少量的添加元素M,则没有硼化物成核。 更重要的是,本发明人发现,即使不使任何硼化物成核,也可以抑制异常晶粒的生长,这与现有技术中应当包含硼化物以阻止异常晶粒生长的现有技术相反。 \n\n [0062] 为了比较,具有由31.3质量%的R(包括20.3质量%的Nd,6.0质量%的Pr和5.0质量%的Dy),0.90质量%的Co,0.20质量%的R组成的组成的烧结磁铁。 还通过EPMA观察到Al,0.10质量%的Cu,0.07质量%的Zr,0.99质量%的B和Fe,并且不可避免地包含杂质,作为余量。 拍摄的照片显示在  图。  14 。 从中可以看出  图。  14 ,该含有高百分比的B的烧结磁体具有Zr和B的累积相。 \n\n [0063] 如上所述,根据本发明,通过将Zr添加到包含少量B的组合物中,可以在不产生任何硼化物相的情况下抑制异常晶粒生长。 因此,通过使矫顽力和主相的体积百分率的降低最小化,可以得到剩磁增加的R-T-B系烧结磁铁。 \n\n  实验例2 \n\n [0064] 通过与实验例1中使用的方法相同的方法来制造具有下表3中所示的组成的磁体。在该示例中,将大气中的氧气浓度控制为50ppm以下。 为了减少所得烧结磁体中的氧含量,进行粉碎过程。 在各种烧结温度下烧结以这种方式制备的这些样品No.7至20,从而获得了烧结磁体,其性能评估如下表4所示。在表4中,每个项目均按照实验例No.5进行了评估。 上述1。 \n\n  表3 \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n \n\n     样品 钕 铁 有限公司AlCuZr 嘎BOCN  7号29.3 巴尔0.880.160.09--1.020.220.060.011  8号29.4 巴尔0.870.150.10--0.980.210.050.010  9号29.2 巴尔0.880.150.09--0.960.220.060.010  10号29.2 巴尔0.880.160.09--0.940.220.060.011  11号29.2 巴尔0.890.160.10--0.900.210.070.010  12号29.3 巴尔0.870.160.100.10-1.020.220.060.011  13号29.2 巴尔0.900.150.100.08-0.990.220.060.010  14号29.1 巴尔0.880.160.090.09-0.960.220.070.010  15号29.2 巴尔0.890.160.090.09-0.930.210.060.011  16号29.2 巴尔0.890.170.090.08-0.910.210.060.011  17号29.3 巴尔0.880.120.100.090.040.970.220.050.009  18号29.3 巴尔0.890.110.100.090.040.950.220.060.009  19号29.2 巴尔0.890.140.100.080.040.930.210.060.010  20号29.3 巴尔0.880.120.100.090.040.910.210.060.011  (单位:质量%)  \n\n  表4      样品 累积阶段 1,020°摄氏度 1,040°摄氏度 1,060°摄氏度 1,080°摄氏度 BZr 尺寸 k / H 尺寸 k / H 尺寸 k / H 尺寸 k / H  7号 ○- ○0.967 ○0.970 ○0.903 ×0.328  8号 ○- ○0.970 ○0.972 ×0.790 ×0.120  9号 ○- ○0.968 ○0.975 ×0.689 ×0.093  10号 ×- ○0.965 ○0.973 ○0.897 ×0.241  11号 ×- ○0.970 ○0.973 ×0.648 ×0.109  12号 ○ ○* ○0.968 ○0.972 ○0.972 ○0.964  13号 ○ ○* ○0.970 ○0.97500.973 ○0.953  14号 ○ ○* ○0.972 ○0.973 ○0.971 ○0.933  15号 × × ○0.968 ○0.973 ○0.974 ○0.940  16号 × × ○0.968 ○0.974 ○0.974 ○0.934  17号 ○ ○* ○0.970 ○0.974 ○0.972 ○0.935  18号 × × ○0.969 ○0.975 ○0.973 ○0.920  19号 × × ○0.967 ○0.973 ○0.974 ○0.915  20号 × × ○0.968 ○0.972 ○0.973 ○0.924   图例:在累积相中,○表示未发现累积相,×表示已识别出累积相,*表示B和Zr的累积相共存。 在尺寸(粒径)中,○表示未发生异常晶粒长大,×表示发生了异常晶粒长大。  \n\n [0065] 从表4所示的结果可以看出,无论是否存在B或Zr累积相,都发生了异常的晶粒长大。 还可以看出,无论是否存在Zr累积相,通过添加Zr,都可以抑制异常晶粒的生长。 \n\n [0066] 在1,020°C下烧结时,每个样品的烧结密度为7.46 Mgm -3 [0067] 这就是为什么要避免异常晶粒长大并最大程度减少方比的降低,同时获得仅会导致剩余磁通量降低程度可忽略不计的烧结密度,1,040°C是7号至11号样品的唯一首选烧结温度 ,未添加Zr。  7号样品的平方比为0.9以上,因为Hk和HcJ的值小,所以也不优选。 同时,对于包含添加剂Zr的12号至20号样品,即使在1,080℃的烧结温度下,异常晶粒的生长和平方比的降低仍然最小,优选的烧结温度范围从1,040℃变为1,080℃。  °C高于7至11号样品。因此,与7至11号样品相比,12至20号样品的制造更加稳定。 \n\n [0068] 接下来,将参考以下内容进行描述。  图。  15  磁性能如何随B质量分数变化。  图。  15  是一个曲线图,概述了7号至20号样品的磁性能如何随B的质量分数变化,其中横坐标表示B的质量分数,而纵坐标表示上半部分的剩磁B r和矫顽力H cJ。 下半部分别。 \n\n [0069] 从中可以看出  图。  15 ,不含Zr的7至11号样品在B质量分数为约0.96质量%时具有峰剩磁。 这是因为,一旦B质量分数超过约0.96质量%,则对磁性没有贡献的富B相(即Nd 1.1 Fe 4 B 4化合物相)增加。 但是,即使B质量分数超过约0.96质量%,矫顽力也不会受到富B相的影响,也不会降低。 \n\n [0070] 另一方面,如果B质量分数小于约0.96质量%,则没有产生富B相,而是Nd 2 Fe 17相成核。 该Nd 2 Fe 17相是软磁性相(而主相是硬磁性相)。 因此,Nd 2 Fe 17相一旦成核,矫顽力急剧下降。 另外,由于主相的体积百分比由于Nd 2 Fe 17相的成核而降低,所以剩磁也降低。 \n\n [0071] 含有Zr的No.12至No.16的样品具有比No.7至No.11的样品更高的矫顽力。然而,如果B质量分数小于约0.96质量%,则其剩磁率与No.7至No.11的样品一样急剧下降。 另一方面,一旦B质量分数超过约0.96质量%,则剩磁降低。 特别是当B质量分数超过0.98质量%时,No.12至16的样品的剩磁的降低变得比不包含Zr的No.7至11的样品的剩磁大。 这是因为,如果包含Zr的样品中的B过多,则ZrB 2,Zr-Nd-B或Zr-Fe-B等含Zr的硼化物相成核。 就是说,可以看出,添加Zr通过抑制异常晶粒生长而间接地而非直接地改善了磁性能,但是在B质量分数超过0.98质量%的组成范围内却显着降低了剩磁。  。 \n\n [0072] 在不仅添加Zr而且添加极少量(例如0.04质量%)的Ga的样品编号17至20中,在B质量分数小于0.96的组成范围内,剩磁和矫顽力降低。 可以消除质量%,并且使剩磁最大化的B质量分数范围在低分数方向上基本上扩大,从而实现具有宽的烧结温度范围和优异的磁性能的烧结磁体。 当B质量分数为0.95质量%以下时,不仅添加Zr,而且添加Ga而获得的这些效果是显着的。 \n\n [0073]  图。  15  B表示质量分数为0.90质量%以上时的结果。 然而,如果B质量分数至少等于0.85质量%,则通过组合添加Zr和Ga获得的那些效果是显着的。 但是,如本实验例中所述,B质量分数优选为0.90质量%以上0.98质量%以下。 \n\n  实验例3 \n\n [0074] 烧结磁体,其组成由22.0质量%的Nd,6.2质量%的Pr,2.0质量%的Dy,1.8质量%的Co,0.10质量%的Cu,0.94质量%的B,0.05质量%的Ga, 通过与实验例1相同的方法,在各种烧结温度下,生成Zr的X(0〜4)质量%,Fe和不可避免地含有杂质作为余量,并评价其磁特性。 在该实验例3中制造的烧结磁铁的氧含量为0.38质量%〜0.41质量%。 \n\n [0075]  图。  16  图2是表示在烧结温度分别为1,060℃和1,080℃的两种情况下磁性能如何随Zr的质量分数变化的图。 在  图。  16 ,横坐标表示Zr质量分数,而纵坐标表示Hk(当磁化强度变为剩磁B r的90%时外部磁场的强度),矫顽力H cJ和剩磁B r依次向下。 \n\n [0076] 从中可以看出  图。  16 ,  即使Zr质量分数小至0.01质量%,只要烧结温度高,则矫顽力H cJ的改善效果仍然显着。 但是,一旦Zr质量分数超过0.3质量%,则剩磁B r急剧下降。 因此,可以看出,Zr质量分数优选被调节为0.3质量%以下。 \n\n  工业适用性  \n\n [0077] 根据本发明,可以得到矫顽力的降低最小且剩磁增加的R-T-B系烧结磁铁。 根据本发明的稀土烧结磁体提供了宽的烧结温度裕度,并且可以在工业上不断地制造。 根据本发明的稀土烧结磁体可以特别有效地用于急需高性能的应用中,例如在各种类型的电动机和致动器中。');
INSERT INTO `os_patent_instruction_text` VALUES (13034, 22863, '【技術分野】\n\n本発明は、R-T-B系焼結磁石およびその原料となる希土類合金に関する。\n\n【背景技術】\n\n高性能永久磁石として代表的なR-T-B系焼結磁石(「ネオジム·鉄·ボロン系焼結磁石」と呼ばれることもある。)は、優れた磁気特性を有することから、各種モータ、アクチュエータなど様々な用途に使用されている。\n\nR-T-B系焼結磁石は、主にR2Fe14B型結晶構造を有する化合物からなる主相(R2Fe14B化合物相)、Rリッチ相、およびBリッチ相から構成されている。R-T-B系焼結磁石の基本的な組成は、例えば、米国特許第4,770,723号明細書および米国特許第4,792,368号明細書に記載されている。R-T-B系焼結磁石は種々の磁石の中で最も高い最大磁気エネルギー積を有するものの、さらなる高性能化、特に、残留磁束密度の向上が望まれている。例えば、残留磁束密度を1%向上できるだけでも工業的な価値は高い。米国特許第4,770,723号および米国特許第4,792,368号の開示内容の全てを参考のために本明細書に援用する。\n\n焼結磁石の残留磁束密度を高めるためには、焼結磁石の密度(「焼結密度」ということがある。)を真密度に近づけることが必要である。そこで、R-T-B系焼結磁石の密度を向上するために、焼結温度を高くする、あるいは、焼結時間を長くすると、焼結密度は上昇するものの、結晶粒が粗大になり、保磁力が低下するという問題が生じる。特に、局所的に巨大な結晶粒(主相)が形成される「異常粒成長」が起こると、減磁曲線における角形比(Hk/HcJ)が低下し、実用上支障が生じる。\n\nすなわち、R-T-B系焼結磁石の保磁力を犠牲にすることなく焼結密度を高めることは困難であり、また、性能のバランスが取れる焼結条件が見つかったとしても、そのマージンは狭く、性能の優れたR-T-B系焼結磁石を工業的に安定に製造することは非常に困難であった。\n\n特開昭61-295355号公報および特開2002-75717号公報には、TiやZrなどの硼化物を生成する元素を添加し、粒界に硼化物を析出させることによって、異常粒成長を抑制する技術が開示されている。特開昭61-295355号公報および特開2002-75717号公報に記載されている方法によると、結晶粒径が過大になるのを抑制しつつ、すなわち保磁力の低下を抑制しつつ、焼結密度を高めることができる。\n\nしかしながら、上記特開昭61-295355号公報および特開2002-75717号公報に記載されている方法によると、焼結磁石中に、磁力を有しない硼化物相(Bリッチ相)が存在するために、磁性をつかさどる主相(R2T14B型化合物相)の体積比率が低下する結果、残留磁束密度が低下する。\n\n【発明の開示】\n\n本発明はかかる諸点に鑑みてなされたものであり、本発明の目的は、保磁力の低下を抑制し、且つ、主相の体積比率の低下を抑制することによって残留磁束密度を向上させたR-T-B系焼結磁石を提供することにある。\n\n本発明の希土類焼結磁石は、主相がR2T14B型化合物相を含む希土類焼結磁石であって、27質量%以上32質量%以下の範囲内のR(Nd、Pr、TbおよびDyからなる群から選択される少なくとも1種の希土類元素であって、NdまたはPrの少なくとも一方を必ず含む)と、60質量%以上73質量%以下の範囲内のT(Fe、または、FeとCoとの混合物)と、0.85質量%以上0.98質量%以下の範囲内のQ(B、または、BとCとの混合物であり、質量%の計算においては原子数基準でBに換算される。)と、0質量%超0.3質量%以下のZrと、2.0質量%以下の添加元素M(Al、Cu、Ga、InおよびSnからなる群から選択される少なくとも1種の元素)と、不可避不純物とを含む。\n\nある実施形態において、Qの集積相を実質的に有しない。\n\nある実施形態において、前記添加元素はGaを含み、0.01質量%以上0.08質量%以下の範囲内のGaを含む。\n\nある実施形態において、0.95質量%以下のQを含む。\n\nある実施形態において、0.90質量%以上のQを含む。\n\nある実施形態において、減磁曲線における角形比(Hk/HcJ)が0.9以上である。\n\n本発明の希土類合金は、主相がR2T14B型化合物相を含む希土類焼結磁石用の原料合金であって、27質量%以上32質量%以下の範囲内のR(Nd、Pr、TbおよびDyからなる群から選択される少なくとも1種の希土類元素であって、NdまたはPrの少なくとも一方を必ず含む)と、60質量%以上73質量%以下の範囲内のT(Fe、または、FeとCoとの混合物)と、0.85質量%以上0.98質量%以下の範囲内のQ(B、または、BとCとの混合物)と、0質量%超0.3質量%以下のZrと、2.0質量%以下の添加元素(Al、Cu、Ga、InおよびSnからなる群から選択される少なくとも1種の元素)と、不可避不純物とを含む。\n\nある実施形態において、Qの集積相を実質的に有しない。\n\nある実施形態において、前記添加元素はGaを含み、0.01質量%以上0.08質量%以下の範囲内のGaを含む。\n\nある実施形態において、0.95質量%以下のQを含む。\n\n本発明によると、硼化物相を生成させることなく、異常粒成長を抑制することができるので、保磁力の低下を抑制し、且つ、残留磁束密度を向上させたR-T-B系焼結磁石が得られる。\n\n【図面の簡単な説明】\n\n図1は、試料1から6の減磁曲線を示す図である。\n\n図2は、試料1と試料4について、焼結温度と磁気特性との関係を示すグラフである。\n\n図3は、試料1を1080℃で焼結した場合の金属組織を偏光顕微鏡で観察した結果を示す写真である。\n\n図4は、試料1を1100℃で焼結した場合の金属組織を偏光顕微鏡で観察した結果を示す写真である。\n\n図5は、試料1を1120℃で焼結した場合の金属組織を偏光顕微鏡で観察した結果を示す写真である。\n\n図6は、試料4を1080℃で焼結した場合の金属組織を偏光顕微鏡で観察した結果を示す写真である。\n\n図7は、試料4を1100℃で焼結した場合の金属組織を偏光顕微鏡で観察した結果を示す写真である。\n\n図8は、試料4を1120℃で焼結した場合の金属組織を偏光顕微鏡で観察した結果を示す写真である。\n\n図9は、試料2の焼結磁石のEPMAによる反射電子像(BEI:各図中の左上)、および、組成像(Nd(図中右上)、B(図中左下)および添加元素Ti(図中右下))を示す図である。\n\n図10は、試料3の焼結磁石のEPMAによる反射電子像(BEI:各図中の左上)、および、組成像(Nd(図中右上)、B(図中左下)および添加元素V(図中右下))を示す図である。\n\n図11は、試料4の焼結磁石のEPMAによる反射電子像(BEI:各図中の左上)、および、組成像(Nd(図中右上)、B(図中左下)および添加元素Zr(図中右下))を示す図である。\n\n図12は、試料5の焼結磁石のEPMAによる反射電子像(BEI:各図中の左上)、および、組成像(Nd(図中右上)、B(図中左下)および添加元素Nb(図中右下))を示す図である。\n\n図13は、試料6の焼結磁石のEPMAによる反射電子像(BEI:各図中の左上)、および、組成像(Nd(図中右上)、B(図中左下)および添加元素Mo(図中右下))を示す図である。\n\n図14は、比較試料の焼結磁石のEPMAによる反射電子像(BEI:各図中の左上)、および、組成像(Nd(図中右上)、B(図中左下)および添加元素Zr(図中右下))を示す図である。\n\n図15は、試料7から20の磁気特性をB含有率について整理した結果を示すグラフであり、横軸はB含有率であり、縦軸は、上側が残留磁束密度Br、下側が保磁力HcJである。\n\n図16は、焼結温度が1060℃および1080℃の2条件について、Zr含有率と磁気特性との関係を示すグラフである。\n\n【発明を実施するための最良の形態】\n\n本発明者は、B含有率が0.98質量%以下のR2T14B系希土類焼結磁石に、0.3質量%以下のZrを添加することによって、硼化物相を生成させることなく、異常粒成長を抑制することができることを見出し、本発明を想到するに至った。\n\n本発明の実施形態によるR2T14B系希土類焼結磁石は、27質量%以上32質量%以下の範囲内の希土類元素R(Nd、Pr、TbおよびDyからなる群から選択される少なくとも1種の希土類元素であって、NdまたはPrの少なくとも一方を必ず含む)と、60質量%以上73質量%以下の範囲内のT(Fe、または、FeとCoとの混合物)と、0.85質量%以上0.98質量%以下の範囲内のBと、0質量%超0.3質量%以下のZrと、2.0質量%以下の添加元素M(Al、Cu、Ga、InおよびSnからなる群から選択される少なくとも1種の元素)と、不可避不純物とを含む。\n\nRは希土類元素であって、Nd、Pr、Dy、Tbのうち少なくとも1種から選択される。ただし、Rは、NdまたはPrのいずれか一方を必ず含む。好ましくは、Nd-Dy、Nd-Tb、Nd-Pr-Dy、またはNd-Pr-Tbで示される希土類元素の組合わせを用いる。希土類元素のうち、DyやTbは、特に保磁力の向上に効果を発揮する。また、Rは純元素でなくてもよく、工業上入手可能な範囲で、製造上不可避な不純物を含有するものでも差し支えない。含有率は、27質量%未満では高磁気特性、特に高保磁力が得られず、32質量%を超えると残留磁束密度が低下するため、27質量%以上32質量%以下とする。\n\nTは、Feを必ず含み、その一部、好ましくは50%以下をCoで置換することができる。また、FeやCo以外の少量の遷移金属元素を含有することができる。Coは温度特性の向上、耐食性の向上に有効であり、通常は、10質量%以下のCoおよび残部Feの組合わせで用いる。含有率は、60質量%未満では残留磁束密度が低下し、73質量%を\n\n超えると保磁力の低下を来たすので、60質量%以上73質量%以下とする。\n\nZrは、本発明の必須元素である。以下に実験例を示して説明するように、Zrは特有の効果を発揮する。Zrは主相の希土類サイトを置換して固溶し、結晶成長速度を低下させることによって、異常粒成長を抑制する。すなわち、特開昭61-295355号公報および特開2002-75717号公報に記載されているように、異常粒成長を抑制するためには硼化物が必要であるという従来の技術常識に反し、硼化物を析出させなくても異常粒成長を抑制できる、ということを本発明者が初めて知見した。Zrを添加することによって、残留磁束密度を低下させる要因となる硼化物相を必要とせず、従来の組成では異常粒成長が起こるような温度および/または時間で焼結することが可能となり、微細組織を維持したままで焼結密度を高めることができる。本発明の実施形態によると、正方晶R2T14B型結晶構造を有する主相が磁石体積の90%以上を占め、かつBリッチ相(Q集積相:例えばR1.1Fe4B4相)を実質的に含まない組織が得られる。\n\nここで、「実質的に含まない」とは、磁石の組織を、無作為に選択した10以上の部分についてEPMAを用いて観察した結果、90%以上の部分において、Q集積組織が認められないことを意味し、また、「Q集積相が認められない」とは、EPMA(例えば島津製作所製EPMA(EPM1610)を用いて条件(加速電圧:15kV、ビーム径:1μm、電流値:30nA(ファラデーカップ)、分光結晶:LSA200)で硼素(B)の蛍光X線像(B-Kα)を観察した際に、100μm×100μmの視野において、輝点が集中している部分(すなわち集積相と帰属される部分)の総面積が視野全体の5%未満の場合を言うものとする。\n\nただし、Zr含有率が0.3質量%を超えると、残留磁束密度が低下するので、その含有率は0.3質量%以下とする。また、過剰のBが存在すると硼化物相が形成されるので、硼化物相の形成を抑制するためにBの含有率を0.98質量%以下とする。なお、Bの一部をCに置換することができる。B、または、BとCとの混合物をQとしてあらわすと、Qの含有率(質量%)の計算においては、Bの一部を置換したCを原子数基準でBに換算して求めればよい。\n\n添加元素Mは、Al、Cu、Ga、InおよびSnのうちの少なくとも1種の元素である。添加量は2.0質量%以下が好ましい。2.0質量%を超えると残留磁束密度が低下するためである。\n\n添加元素の中でもGaは特有の効果を発揮する場合がある。後に実験例を示して説明するように、B(Q)の含有率が低くなると軟磁性のR2T17化合物が生成され、保磁力および残留磁束密度が低下することがある。このような組成範囲においてGaを極微量添加すると、軟磁性相の生成が抑制され、B含有率の広い範囲で保磁力および残留磁束密度が高い希土類焼結磁石が得られる。本発明は、Zr硼化物の生成を抑制するためにBを0.98質量%以下とする場合に特に有効である。\n\nGaの添加による効果は、B(Q)の含有率が0.95質量%以下の場合に顕著であり、また、B(Q)の含有率が0.90質量%以上の場合に顕著である。なお、Ga含有率が0.01質量%未満では上記の効果が得られないことがあり、また、分析による管理が困難となる。一方、Ga含有率が0.08質量%を超えると、残留磁束密度Brの低下を招く場合があるため好ましくない。\n\n本発明では、上記元素以外に不可避的不純物を許容することができる。例えば、Feの原料から混入するMn、Crや、Fe-B(フェロボロン)から混入するAl、Siや、製造工程上不可避的に混入するH、NおよびOなどである。\n\nまた、焼結磁石においては、酸素:0.5質量%以下、窒素:0.2質量%以下、水素:0.01質量%以下であることが好ましい。このように酸素、窒素、および水素濃度の上限を制限することにより、主相比率を高めることができ、残留磁束密度Brを高めることができる。\n\n本発明による実施形態のR-T-B系焼結磁石は公知の方法で製造され得る。例えば以下の方法で製造することができる。\n\nまず、所定の組成を有する母合金の溶湯を例えば高周波溶解法で作製し、この溶湯を冷\n\n却·凝固して合金(母合金)を作製する。母合金の組成は、希土類焼結磁石が上記の組成となるように調整する。合金(母合金)の製造は、公知の一般的な方法を採用して行うことができる。各種の合金製造方法の中でも、ストリップキャスト法などの急冷法が好適に用いられる。ストリップキャスト法によれば、例えば厚さ0.1mm〜5mm程度の合金鋳片を得ることができる。\n\nストリップキャスト法などの急冷法の代わりに、遠心鋳造法を採用しても良い。また、溶解·合金化の工程に代えて、直接還元拡散法を用いて合金を作製しても良い。急冷法以外の方法で得られた凝固合金を母合金として用いた場合にも同じ効果を得ることが出来る。しかしながら、ストリップキャスト法のような急冷法に比べると、偏析が生じ易く、そのため合金組織中にZr硼化物等が析出することがあり、Zrを効率的に添加することが難しい。また、Zr硼化物等が一旦析出すると、熱処理によって消失させることが困難であり、焼結後も残存する。従って、このような凝固合金から作製した焼結磁石は、急冷合金を用いた場合に比べ、主相体積比率が低くなり易く、その結果として残留磁束密度Brが小さくなることがある。\n\n得られた合金を公知の方法によって平均粒径1〜10μmに粉砕する。このような合金の粉末は、粗粉砕工程と微粉砕工程の2種類の粉砕を行うことによって好適に作製され得る。粗粉砕は、水素吸蔵粉砕法や、ディスクミルなどを用いた機械的粉砕法によって行うことができる。また、微粉砕は、ジェットミル粉砕法、ボールミル、アトライターなどの機械的粉砕法によって行うことができる。\n\n上記の粉砕によって得られた微粉砕粉は、公知の成形技術を用いて様々な形状の成形体に成形される。成形は、磁場中圧縮成形法を用いて行うことが一般的であるが、パルス配向した後静水圧成形やゴムモールド内で成形する方法を用いて行っても良い。\n\n成形時の給粉の能率、成形密度の均一化、成形時の離型性などを向上させるために、脂肪酸エステルなどの液状潤滑剤やステアリン酸亜鉛などの固体状潤滑剤を微粉砕前の粉末および/または微粉砕後の粉末に添加してもよい。添加量は、合金粉末100重量部に対して、0.01重量部〜5重量部が好ましい。\n\n成形体は、公知の方法によって焼結することができる。焼結温度は1000℃〜1180℃、焼結時間は1〜6時間程度が好ましい。本発明による実施形態の合金は、Zrの添加により従来よりも高い温度で焼結することができるので、従来は温度ばらつきなどを考慮すると量産には採用することが困難であった、例えば、1100℃以上の焼結温度を採用することができる。焼結後の焼結体には、必要に応じて熱処理(時効処理)を施す。熱処理条件は、例えば、温度400℃〜600℃、時間1〜8時間程度が好ましい。\n\n以下、実験例を示して本発明を更に詳細に説明する。\n\n(実験例1)\n\n表1に示す各組成の磁石(試料1〜6)を以下の手順で作製した。なお、表1に示した組成は、得られた焼結磁石の分析値であり、母合金の組成とは異なる。組成分析は、島津製作所製ICPおよび堀場製作所製ガス分析装置を用いて公知の方法で行った。\n\nなお、表1においてFeを残部として表したが、残部はFeと微量の不可避不純物とを含む。後述する表3においても同じ。\n\n本実験例の試料におけるBの含有量は、いずれの試料についても、R量およびT量に対する化学量論量にほぼ一致する。また、添加元素Mを無視して各相の体積比率を計算すると、主相(Nd2Fe14B化合物相):94.4%、Rリッチ相:2.5%、Bリッチ相:0.1%、R酸化物相(Nd2O3):3.0%となる。\n\n所定の組成の母合金の溶湯を調製し、ストリップキャスト法を用いて、厚さが0.2から0.4mm程度の合金鋳片を作製した。\n\n得られた合金鋳片を常温で絶対圧力0.2MPaの水素雰囲気で2時間保持し、合金に水素を吸蔵させた。\n\n水素吸蔵した合金を真空中にて約600℃で3時間保持した後、室温まで冷却した。\n\n得られた合金は水素脆化により崩壊しているが、これをふるいに掛けることによって解砕し、粒径が425μm以下の粗粉末を得た。\n\n得られた粗粉末をジェットミル粉砕装置を用いて、窒素ガス雰囲気中で微粉砕した。得られた粉末の平均粒径は、いずれの試料についても、FSSS測定で3.2μm以上3.5μm以下の範囲であった。\n\n得られた粉末をプレス成形することによって、成形体を得た。ここでは、約1T(テスラ)の直角磁界を印加しながら、196MPaの圧力で成形した。\n\n得られた成形体を種々の温度条件で約2時間焼結することによって、焼結体を得た。\n\n得られた焼結体をAr雰囲気中、550℃で2時間の時効処理を施したものを、それぞれ焼結磁石の試料とし、磁気特性を評価した。\n\nさらに、400℃にて不活性雰囲気で熱消磁した後、金属組織観察および化学分析を行った。\n\n\n\n図1に各試料の減磁曲線を示す。ここで用いた試料の焼結条件は、1120℃、2時間である。\n\n図1から明らかなように、添加元素Mを含まない試料1の角形性は著しく悪い。これは、以下に説明するように、試料1にとって、1120℃は焼結温度として高すぎるために、異常粒成長が起こったためである。添加元素Mとして、Ti、V、NbおよびMoを添加した試料2、3、5および6は、試料1よりも良好な角形性を有しているものの、Zrを添加した試料4には及ばない。試料4の減磁曲線の角形性は非常に良好である。この結果から、Zrが特異な効果を発揮していることがわかる。\n\n次に、図2を参照しながら、試料1と試料4について、焼結温度と磁気特性との関係を説明する。図2は、横軸に焼結温度をとり、縦軸に、上から順に、角形比(Hk/HcJ)、保磁力HcJ、および残留磁束密度Brをとったグラフである。角形性の指標としてここで用いた角形比(Hk/HcJ)のHkは、磁化が残留磁束密度Brの90%となるときの外部磁界の値を示す。図2に示したグラフから、Zrを添加した試料4(図中△)は添加元素を含まない試料1に比べ、良好な磁気特性が得られる焼結温度範囲の上限が約20℃上昇していることがわかる。その結果、焼結温度を1120℃(1393K)としても、角形比は0.9以上あり、非常に良好な角形性を有している。\n\n次に、表2を参照しながら、焼結温度、角形性および異常粒成長の関係を説明する。なお、表2中の粒径欄の○は異常粒成長が無いことを示し、×は異常粒成長が有ることを示している。表2から分かるように、添加元素を含まない試料1は既に1100℃で異常粒成長が見られるとともに角形比(Hk/HcJ)の値も低いのに対し、Zrを添加した試料4では1120℃でも異常粒成長は認められず、且つ、角形比も0.9以上の高い値を\n\n有している。また、試料2、3、5および6の結果からわかるように、他の添加元素(Ti、V、NbおよびMo)も1110℃までは、異常粒成長を抑制する効果を有し、高い角形比を維持できるものの、1120℃の結果をみると明らかなように、その効果は、Zrには及ばない。\n\n\n\n次に、異なる温度で焼結した試料1および試料4の金属組織を偏光顕微鏡で観察した結果を図3から図8に示す。図3から図5は、試料1を1080℃、1100℃および1120℃で焼結した場合、図6から図8は、試料4を1080℃、1100℃および1120℃で焼結した場合の観察結果を示している。\n\n試料1では、図3からわかるように、1080℃では異常粒成長はみられず、微細な結晶粒からなる良好な金属組織が形成されている。これに対し、焼結温度が1100℃の場合、図4からわかるように、既に異常粒成長によって生成された巨大な組織が観察されている。焼結温度が1120℃の図5では、さらに多くの巨大組織が観察されている。\n\n一方、Zrを添加した試料4では、図6から図8からわかるように、異常粒成長が抑制されており、図8に示す焼結温度が1120℃の場合でも、実質的に巨大組織は認められない。\n\n次に、図9から図13にそれぞれ試料2から6の焼結磁石(焼結温度1040℃)のEPMAによる反射電子像(BEI:各図中の左上)、および、組成像(Nd(図中右上)、B(図中左下)および添加元素M(図中右下))を示す。いずれの試料もBの含有率が0.95質量%と低いため、Bの集積相(偏析)は認められず、硼化物が形成されていないことが分かる。また、添加量が0.1質量%の添加元素M(Ti、V、NbおよびMo)の集積相も認められない。なお、原子量が比較的小さいTiについては若干の偏析が認められる。\n\n上記の結果から分かるように、Bの含有量が少なく、且つ、添加元素Mの添加量が微量であれば、硼化物が析出しないことがわかる。さらに重要なことは、異常粒成長を抑制するためには硼化物が必要であるという従来の技術常識に反し、硼化物を析出させなくても異常粒成長を抑制できる、ということがわかったことである。\n\nなお、比較のために、図14に、R(Nd:20.3質量%、Pr:6.0質量%、Dy:5.0質量%):31.3質量%、Co:0.90質量%、Al:0.20質量%、Cu:0.10質量%、Zr:0.07質量%、B:0.99質量%、残部:Feおよび不可避不純物の組成を有する焼結磁石をEPMAを用いて観察した結果を示す。図14からわかるように、Bの含有率が高いこの焼結磁石には、Zrの集積相およびBの集積相が形成されている。\n\nこのように、本発明によると、B含有量が少ない組成にZrを添加することによって、硼化物相を生成させることなく、異常粒成長を抑制することができる。従って、保磁力の低下を抑制し、且つ、主相の体積比率の低下を抑制することによって残留磁束密度を向上\n\nさせたR-T-B系焼結磁石を得ることができる。\n\n(実験例2)\n\n表3に示す組成の磁石を実験例1と同様の方法で作製した。ただし、ここでは焼結磁石中に含まれる酸素量を低減するために、微粉砕工程における雰囲気ガス中の酸素濃度を50ppm以下に管理した。このようにして得られた試料7〜20を種々の焼結温度で焼結することによって得られた磁石を評価した結果を表4に示す。表4に示す各項目の評価は実験例1と同様の方法で行った。\n\n\n\n\n\n表4の結果からわかるように、異常粒成長は、B集積相やZr集積相の有無とは無関係に発生する。また、Zrの添加により、Zrの集積相の有無とは無関係に異常粒成長が抑制されていることがわかる。\n\n焼結密度は、1020℃で焼結した場合は、いずれの試料についても7.46〜7.49Mgm-3であり、真密度:約7.55Mgm-3に対し、やや焼結不足である。これに対し、焼結温度が1040℃〜1080℃の場合、いずれの試料についても、焼結密度は7.54〜7.57Mgm-3に達している。このことから、焼結温度が1020℃では焼結不足であり、残留磁束密度が低いことが問題となる。\n\n従って、残留磁束密度の低下が問題とならない焼結密度を確保しつつ、異常粒成長や角形比の低下を抑制するためには、Zrを添加していない試料7から11については、好ましい焼結温度は1040℃の一条件しかないことになる。なお、試料7の角形比は0.9以上あるが、HkおよびHcJの値が小さいため好ましくない。これに対し、Zrを添加した試料12〜20については、1080℃の焼結温度においても異常粒成長の発生や角形比の低下が抑制されており、焼結温度範囲は1040℃〜1080℃と高温側に拡大している。従って、試料12〜20は、試料7〜11よりも、工業的に安定に製造することができる。\n\n次に、図15を参照しながら、B含有率と磁気特性との関係を説明する。図15は試料7から20の磁気特性をB含有率について整理した結果を示すグラフであり、横軸はB含有率であり、縦軸は、上側が残留磁束密度Br、下側が保磁力HcJである。\n\n図15からわかるように、Zrを含まない試料7から11の残留磁束密度のピークは、B含有率が0.96質量%付近にある。これは、B含有率が約0.96質量%を超えると、磁性に寄与しないBリッチ相(Nd1.1Fe4B4化合物相)が増加するためである\n\n。なお、保磁力はBリッチ相の影響を受けないので、B含有率が約0.96質量%を超えても低下しない。\n\n一方、B含有率が約0.96質量%よりも少ないと、Bリッチ相は生成せず、Nd2Fe17相が析出する。このNd2Fe17相は軟磁性相(主相は硬磁性相)であるため、Nd2Fe17相が析出すると保磁力が急激に低下し、また、Nd2Fe17相の析出によって主相の体積分率が低下するので残留磁束密度も低下する。\n\nZrを含む試料12〜16では、保磁力の値は試料7〜11よりも高いものの、B含有率が約0.96質量%よりも小さいと残留磁束密度は試料7〜11と同様に低下する。また、残留磁束密度は、B含有率が約0.96質量%を超えると低下し、特に、B含有率が0.98質量%を超えるとZrを含まない試料7〜11よりも低下量が大きくなる。これは、Zrを含む試料でBが過剰に存在すると、ZrB2、Zr-Nd-BまたはZr-Fe-BというZrを含む硼化物相が析出するためである。すなわち、Zrの添加は、異常粒成長を抑制することによって間接的に磁気特性を改善するが、磁気特性を直接的に向上する効果はなく、むしろ、B含有率が0.98質量%を超える組成範囲では、残留磁束密度を大幅に低下させることがわかる。\n\nZr添加に加えて、Gaを極微量(0.04質量%)添加した試料17〜20では、B含有率が0.96質量%よりも小さい組成範囲における残留磁束密度の低下や保磁力の低下が解消され、残留磁束密度が最大となるB含有率の範囲が低含有率側に大幅に拡大し、焼結温度範囲も広く且つ磁気特性に優れた焼結磁石が得られる。Zr添加に加えてGaをさらに添加することによって得られるこの効果は、B含有率が0.95質量%以下において顕著である。\n\nなお、図15にはB含有率が0.90質量%以上の結果を示しているが、B含有率が0.85質量%以上あれば、Zr添加効果およびGa添加効果は認められる。勿論、例示したように、B含有率が0.90質量%以上で0.98質量%以下であることが好ましい。\n\n(実験例3)\n\n実験例1と同様の方法で、Nd:22.0質量%、Pr:6.2質量%、Dy:2.0質量%、Co:1.8質量%、Cu:0.10質量%、B:0.94質量%、Ga0.05質量%、Zr:X(0〜4)質量%、残部:Feおよび不可避不純物の組成を有する焼結磁石を、種々の焼結温度で作製し、磁気特性を評価した。なお、実験例3で作製した焼結磁石の酸素含有率は0.38〜0.41質量%の範囲であった。\n\n図16は、焼結温度が1060℃および1080℃の2条件について、Zr含有率と磁気特性との関係を示すグラフである。横軸はZr含有率で、縦軸は上から順に、Hk(磁化が残留磁束密度Brの90%となるときの外部磁界の値)、保磁力HcJおよび残留磁束密度Brである。\n\n図16からわかるように、Zr含有率が0.01質量%という極微量であっても、焼結温度が高い場合の保磁力HcJを改善する効果が認められる。一方、Zr含有率が0.3質量%を越えると残留磁化の低下が顕著となるので、Zr含有率は0.3質量%以下に調整することが好ましいことが分かる。\n\n【産業上の利用可能性】\n\n本発明によると、保磁力の低下を抑制し、且つ、残留磁束密度を向上させたR-T-B系焼結磁石が得られる。本発明の希土類焼結磁石は、焼結温度のマージンが広いので、工業的に安定に製造することができる。本発明による希土類焼結磁石は、各種モータ、アクチュエータなど高性能化のニーズが高い用途に特に好適に用いられる。', '技术领域\n\nR-T-B系烧结磁铁及稀土合金技术领域本发明涉及R-T-B系烧结磁铁及稀土合金作为原料。\n\n背景技术\n\n（有时被称为“基于钕 - 铁 - 硼系烧结磁铁”。）高性能永磁体代表RTB系烧结磁铁，因为它的优异的磁特性，各种马达，致动器等各种的它用于应用程序。\n\nR-T-B系烧结磁铁主要由由具有R 2 Fe 14 B型晶体结构（的R 2 Fe 14 B化合物相），富R相的化合物的主相，和从富B相。基于R-T-B系烧结磁体的基本组成，例如，描述于美国专利。4770723号专利和美国专利号4792368。尽管R-T-B系烧结磁体具有各种磁铁中具有最高的最大磁能积，较高的性能，特别是改善在剩余磁通密度是期望的。例如，工业价值高仅有剩余磁通密度可以提高1％。美国专利号4770723和通过引用并入本文的美国专利号4792368的全部公开内容。\n\n为了提高烧结磁体的剩磁，这是必要的，以使烧结磁体的密度（有时被称为“烧结密度”）。要真密度。因此，在为了提高RTB系烧结磁铁的密度，以增加烧结温度，或更长的烧结时间，虽然烧结密度增加时，晶粒变得粗大，降低矫顽力出现了一个问题。特别是，局部巨大的晶粒（主相）为“异常晶粒生长”，其被形成时，减少了去磁曲线的矩形比（Hk / HcJ）之间时，发生实际问题。\n\n即，难以增加烧结密度而不牺牲RTB系烧结磁铁的矫顽力，而且，即使发现烧结条件的性能的平衡，可以采取的范围窄，表现工业上稳定地生产优异的RTB烧结磁体极其困难。\n\n在JP 61-295355和JP 2002-75717，添加JP元件以产生硼化物如Ti和Zr，由在晶界析出的硼化物，抑制异常晶粒生长被披露。根据JP 61-295355和JP 2002-75717中描述的方法JP-，同时抑制晶粒尺寸变得过大，即，能够抑制降低矫顽力的，烧结密度可以增加。\n\n然而，根据在JP-61-295355和JP-2002-75717中描述的方法，JP-在烧结磁体，这是因为硼化物的存在没有磁力的（B富相）在电荷磁性（R2T14B型化合物相）的主相的体积比的结果降低，剩余磁通密度降低。\n\n发明内容\n\n本发明是鉴于上述方面，本发明的目的RTB，是为了抑制矫顽力的降低，并且通过抑制主相的体积比的减小提高了剩余磁通密度基于烧结磁体。\n\n本发明的稀土类烧结磁体中，主相是含有R2T14B化合物相的稀土类烧结磁铁，在32重量％或更少的27重量％以上的范围内，包括R（钕，镨，Tb和Dy组成的组中从Nd中或始终至少一种稀土元素包括Pr中的至少一种），在60重量％以上73重量％以下T（铁的范围内或Fe和Co的混合物一个），Q（范围为0.85质量％以上0.98质量％或更少，或B和C，和A的混合物。）内B由原子基础以质量％，0的计算转化成乙质量％计0.3重量％或更少的Zr，添加元素的2.0质量％M和（铝，铜，镓，至少一种选自由以下组成的In和Sn的组中选择元素），以及不可避免的杂质。\n\n在一个实施例中，它基本上没有Q的积分相位。\n\n在一个实施方案中，附加元素含有Ga并且含有0.01质量％以上且0.08质量％以下的Ga。\n\n在某些实施方案中，它含有高达0.95wt％的Q.\n\n在一些实施方案中，它含有至少0.90wt％的Q.\n\n在一个实施例中，退磁曲线中的矩形比（Hk / HcJ）为0.9或更大。\n\n本发明的稀土合金，主相为稀土包含R2T14B型化合物相烧结磁体的原料合金，R（ND内的32质量％27质量％以上，镨，铽，镝和范围选自Nd和Pr中的至少一种稀土元素不可避免地含有Nd或Pr）和T（Fe，Fe，Co，在混合物中），在0.85质量％以上0.98质量％Q（B或一个B A C的混合物），0质量％0.3重量％或更少的Zr，加入2.0％（重量）或以下的范围内元素（选自Al，Cu，Ga，In和Sn中的至少一种元素）和不可避免的杂质。\n\n在一个实施例中，它基本上没有Q的积分相位。\n\n在一个实施方案中，附加元素含有Ga并且含有0.01质量％以上且0.08质量％以下的Ga。\n\n在某些实施方案中，它含有高达0.95wt％的Q.\n\n根据本发明，而不产生硼化物相，能够抑制异常晶粒生长，抑制矫顽力的降低，并具有改善的RTB系烧结磁铁可以得到剩余磁通密度。\n\n附图说明\n\n图1是示出样品1至6的退磁曲线的图。\n\n图2是显示样品1和4的烧结温度与磁特性之间的关系的图。\n\n图3是显示用偏光显微镜在1080℃下观察样品1的金相组织的结果的照片。\n\n图4是显示用偏光显微镜在1100℃下观察样品1的金相组织的结果的照片。\n\n图5是显示用偏光显微镜在1120℃下观察样品1的金相组织的结果的照片。\n\n图6是显示用偏光显微镜在1080℃下观察样品4的金相组织的结果的照片。\n\n图7是显示用偏光显微镜在1100℃下观察样品4的金相组织的结果的照片。\n\n图8是显示用偏光显微镜在1120℃下观察样品4的金相组织的结果的照片。\n\n9，EPMA由烧结磁体样品2的反射电子图像（BEI：每张图留在顶部），并且该组合物的图像（ND（在绘图右上），B（在图中左下）和添加元素的Ti（图中右，下））。\n\n图10是由烧结磁体样品3的EPMA的反射电子像（BEI：每张图留在顶部），并且该组合物的图像（ND（在绘图右上），B（在图中左下）和添加元素V（图中右，下））。\n\n11，EPMA由样品4的烧结磁体的反射电子图像（BEI：各图中，左上方的），并且该组合物的图像（ND（在绘图右上），B（在图中左下）和添加元素的Zr（图中右，下））。\n\n图12是由烧结磁体样品5（BEI：每张图留在顶部）的EPMA的反射电子图像，并且该组合物的图像（ND（在绘图右上），B（在图中左下）和添加元素的Nb（图中右，下））。\n\n图13是由样品6的烧结磁体的EPMA的反射电子像（BEI：每张图留在顶部），并且该组合物的图像（ND（在绘图右上），B（在图中左下）和添加元素的Mo（图中右，下））。\n\n图14是通过比较样品的烧结磁体的EPMA的反射电子像（BEI：各图中，左上方的），并且该组合物的图像（ND（在绘图右上），B（在图中左下）和添加元素的Zr（图中右，下））。\n\n图15是表示组织样品7 20为B含量的磁特性的结果的图，横轴表示B含量，纵轴，上剩余磁通密度Br，低级矫顽力HcJ它是。\n\n图16是显示在1060℃和1080℃的两种烧结温度条件下Zr含量与磁性之间的关系的图。\n\n具体实施方式\n\n本发明应，B含量R2T14B基于0.98质量％以下的稀土类烧结磁铁，通过将以下的Zr 0.3％（重量），而不产生硼化物相，抑制异常晶粒生长并且发现构思了本发明。\n\nR2T14B根据本发明的实施例系稀土类烧结磁铁，选自稀土类元素的R（钕，镨，Tb和镝中的27重量％的范围内的组中选择，以32重量％或更少的至少一种稀土类元素a是钕或总是包括Pr中的至少一种），在60重量％以上73重量％以下T（Fe或者Fe的混合物和Co）和0.85％（重量）0.98％（重量）的范围内和0质量％0.3重量％或更少的Zr，添加元素M（铝，铜，镓的2.0质量％的范围内B，选自In和Sn的组中选出的至少一种元素）和不可避免的杂质。\n\nR是稀土元素，选自Nd，Pr，Dy和Tb中的至少一种。但是，R必然包含Nd或Pr。优选地，使用由Nd-Dy，Nd-Tb，Nd-Pr-Dy或Nd-Pr-Tb表示的稀土元素的组合。在稀土元素中，Dy和Tb尤其对提高矫顽力起作用。另外，R不必是纯元素，可以是含有在工业上可获得的范围内不可避免的杂质的元素。含量，高的磁特性是小于27重量％时，不能获得特别高的矫顽力，剩余磁通密度超过32％（重量）减少，质量以上32重量％或更少27％。\n\nT必须含有Fe，其中一部分，优选50％或更少，可以用Co.代替。此外，可以含有少量除Fe和Co之外的过渡金属元素。 Co对于改善温度特性和耐腐蚀性是有效的，并且通常组合使用10质量％或更少的Co和余量的Fe。含量小于60％（重量）减少了剩余磁通密度，所以造成矫顽力的降低超过73质量％，60重量％以上73重量％以下。\n\nZr是本发明的必需元素。 Zr发挥特定效果，如下面通过显示实验实施例所解释的。 Zr取代主相的稀土位点以形成固溶体，并通过降低晶体生长速率来减少异常晶粒生长。也就是说，如日本和日本公开2002-75717专利公开No.昭61-295355，违背了常规技术常识是，在为了抑制异常晶粒生长是必需的硼化物，硼酸本发明人首次发现可以抑制异常晶粒生长而不会使氧化物沉淀。通过添加Zr，而不需要这会导致剩余磁通密度的降低硼化物，在传统的组合物变得可以在温度和/或时间以烧结，如发生异常晶粒生长，细可以在保持结构的同时增加烧结密度。根据本发明的一个实施例中，主相占具有四方R2T14B型结晶结构的磁体体积的90％以上，和富B相：不包含（Q积分相位例如R1.1Fe4B4相）基本上组织中得到了。\n\n在这里，“基本上不含”时，磁体的组织，随机10个或多个部分中选择的观察结果与EPMA为，在的90％的部分，Q集成组织没有观察到意味着，还可以，“Q集成相，未观察到”，EPMA（例如使用Shimadzu EPMA（EPM1610）（加速电压条件：15kV的，光束直径：1微米时，电流值：30 NA（法拉第杯），分析晶体：观察到的硼（B）的荧光X射线图像时，（B-K-α）在LSA200），在视图100微米×100微米，和部分（即，积分相位亮点是浓缩归因领域在整个视野中）小于总视野的5％。\n\n然而，当Zr含量超过0.3质量％，则剩余磁通密度降低，其含量为0.3重量％或更低。另外，由于被形成当B存在过量的硼化物相，B的顺序在一个内容抑制硼化物的形成至0.98质量％以下。 B的一部分可以用C代替。 B，或者，代表B和C为Q的混合物，在Q（质量％）的含量的计算时，为C通过取代B的一部分可以在原子基底B的角度来获得获得。\n\n附加元素M是Al，Cu，Ga，In和Sn中的至少一种元素。添加量优选为2.0质量％以下。如果其超过2.0质量％，则剩余磁通密度降低。\n\n在其他元素中，Ga可能在某些情况下发挥特殊作用。如将参考实验例进行说明，B（Q）的含量为低的软磁性的化合物R2T17产生，矫顽力和剩余磁通密度有可能降低。当在这种组成范围内添加Ga中的痕量，生成软磁性相的被抑制，矫顽力和剩余磁通密度是在宽范围的B的含量得到高的稀土类烧结磁铁。本发明是特别有效的，当为了0.98质量％以下B的抑制的Zr硼化物的形成。\n\n加入镓，B（Q）的含量的效果是在0.95质量％以下的情况下显着，（Q）B的含量是在大于0.90质量％的情况下显著。顺便说一下，Ga含量可能不影响所得到的上述不足0.01重量％时，也由分析管理变得困难。在另一方面，当Ga含量超过0.08质量％是不优选的，因为它们可能会导致剩余磁通密度Br下降。\n\n在本发明中，可以容许除上述元素之外的不可避免的杂质。例如Fe在原料，铬，铝，其是选自Fe-B（硼铁），和Si，H混合掺入Mn为待混合的制造工艺上不可避免地，等N和O.\n\n在烧结磁体中，氧：0.5％（重量）或以下，氮：0.2％（重量）或以下时，氢：优选为0.01质量％以下。因此氧，氮，并通过限制所述氢浓度的上限，则能够提高主相比，可以提高剩余磁通密度Br。\n\n根据本发明的实施方案的RTB烧结磁体可以通过已知方法制造。例如，通过以下方法。\n\n首先，在具有预定组成例的母合金的熔体制备，高频熔融法，使该熔融金属冷却和固化以合金（母合金）。调节母合金的组成，使稀土烧结磁铁具有上述组成。合金（母合金）的制造可以使用公知的一般方法进行。在各种合金制造方法中，优选使用诸如带铸法的快速冷却方法。根据带铸法，可以得到厚度为0.1mm〜约5毫米合金板。\n\n代替诸如带铸法的快速冷却方法，可以采用离心铸造方法。代替熔化和合金化步骤，可以通过直接还原扩散法生产合金。将所得的由比淬火方法，母合金中使用时也能达到同样的效果之外的方法固化的合金。然而，相对于淬冷方法，如薄带连铸法，容易产生偏析，因此其可能的Zr硼化物或类似物在合金结构中沉淀，因此难以有效地添加的Zr。此外，当Zr的硼化物等。一旦沉淀，则难以通过热处理消失，它即使在烧结之后保持。因此，从这样的凝固的合金制造的烧结磁体，在使用急冷凝固合金的情况相比，趋于下主相的体积比，这可能导致作为残留磁通密度Br降低。\n\n通过已知方法将所得合金粉碎至1至10μm的平均粒径。这种合金粉末可以通过进行两种粉碎，粗粉碎步骤和精细粉碎步骤来适当地制备。粗粉碎可以通过氢气吸留粉碎法或使用圆盘磨机等的机械粉碎法进行。另外，研磨可进行喷射研磨法，球磨机，机械研磨法，如超微磨碎机。\n\n通过上述粉碎得到的细粉碎粉末通过使用已知的模塑技术形成各种形状的模塑制品。成型，但使用通常可通过形成面向后的PM等静压的脉冲和橡胶模具的方法来进行磁场压制成型的方法来进行。\n\n如现有的细碎粉末的液体润滑剂，硬脂酸锌和脂肪酸酯模制，模制密度的均匀性，为了提高成型时的脱模性，固体润滑剂中送粉的效率和/或可以在研磨后添加到粉末中。相对于100重量份合金粉末，添加量优选为0.01重量份至5重量份。\n\n可以通过已知方法烧结成型体。烧结温度优选为1000℃至1180℃，烧结时间优选为约1至6小时。合金根据本发明的一个实施例，有可能通过添加的Zr，以往一直难以采用大批量生产，并考虑诸如温度变化在比常规更高的温度下烧结，例如，1100可以采用°C或更高。烧结后的烧结体根据需要进行热处理（时效处理）。热处理条件优选为例如400℃至600℃的温度和约1至8小时的时间。\n\n在下文中，将通过示出实验示例更详细地描述本发明。\n\n（实验例1）\n\n通过以下步骤制备表1中所示的每种组合物的磁体（样品1至6）。表1中所示的组成是所得烧结磁体的分析值，其与母合金的组成不同。使用由Shimadzu Corporation制造的ICP和由Horiba Seisakusho制造的气体分析仪通过已知方法进行组成分析。\n\n在表1中，Fe显示为余量，余量包含痕量的Fe和不可避免的杂质。这同样适用于稍后描述的表3。\n\n该实验例的样品中B的含量与任何样品中的R量和T量的化学计量量几乎一致。另外，计算所述相体积比时忽略额外的元素M，主相（Nd2Fe14B混合物相）：94.4％，富R相：2.5％，富B相：0.1％，R氧化物相（氧化钕） ：3.0％。\n\n制备具有预定组成的母合金熔融合金，并通过带铸法生产厚度为约0.2-0.4mm的合金铸件。\n\n将得到的合金板在室温下在绝对压力0.2MPa的氢气氛中保持2小时，以吸留合金中的氢。\n\n将吸氢合金在约600℃下保持真空3小时，然后冷却至室温。\n\n虽然所获得的合金通过氢脆，这是通过筛分粉碎解体，以下粗粉425微米，得到粒度。\n\n使用喷射式粉碎机在氮气气氛中将得到的粗粉末细粉碎。对于任何样品，通过FSSS测量，所得粉末的平均粒径在3.2μm以上至3.5μm以下的范围内。\n\n将得到的粉末压制成型，得到成型体。这里，在施加约1T（特斯拉）的直角磁场的同时在196MPa的压力下进行模塑。\n\n将得到的成形体在各种温度条件下烧结约2小时，得到烧结体。\n\n将得到的烧结体在Ar气氛中，550℃下进行2小时的时效处理，作为烧结磁铁的样品，评价磁特性。\n\n此外，在400℃的惰性气氛中进行热去磁之后，进行金属组织的观察和化学分析。\n\n图1显示了每个样品的退磁曲线。这里使用的样品的烧结条件是1120℃，2小时。\n\n从图1中可以明显看出，不含添加元素M的样品1的矩形度非常差。这是因为，如下所述，烧结温度过高，因此样品1的1120℃发生异常晶粒生长。添加Ti，V，Nb和Mo作为添加元素M的样品2,3,5和6具有比样品1更好的方形度，但是没有到达添加有Zr的样品4 。样品4的退磁曲线的矩形度非常好。从该结果可以看出，Zr发挥独特的效果。\n\n接下来，参考图2，将描述烧结温度与样品1和样品4的磁特性之间的关系。 2采用在水平轴和垂直轴的烧结温度，以便从顶部，矩形比（比Hk / HcJ），标绘的矫顽磁力HcJ的曲线图，剩余磁通密度Br。这里使用的矩形比（Hk / HcJ）的Hk作为矩形度的指标表示当磁化为剩余磁通密度Br的90％时的外部磁场的值。从图2中所示的曲线图中，在添加Zr的样品4（图△）与样品1不含添加元素，在其中获得良好的磁特性提高到约20℃的烧结温度范围的上限进行比较你知道有。结果，即使烧结温度为1120℃（1393K），矩形比为0.9或更高，并且其具有非常好的矩形度。\n\n接下来，参考表2，将描述烧结温度，矩形度和异常晶粒生长之间的关系。在表2中，粒径栏中的○表示没有异常晶粒生长，x表示晶粒生长异常。从表2可以看出，不含添加元素的试样1在1100℃下已经显示异常晶粒生长，并且矩形比（Hk / HcJ）也低，而在添加Zr的样品4中，其为1120℃。然而，未观察到异常晶粒生长，并且矩形比也具有0.9或更高的高值。此外，如可以从样品2，图3，图5和6，其他添加元素与（Ti，V，Nb和Mo）的结果可以看出还1110℃下具有抑制异常晶粒生长，高矩形比的效果然而，从1120℃的结果可以明显看出，其效果不会达到Zr。\n\n接下来，图8示出的观察与样品1和样品4在不同于图温度的偏光显微镜烧结的金属结构的结果。图3至图5是试样1 1080℃，当在1100℃和1120℃下烧结，图6-8中，样品4 1080℃，在1100℃和1120℃下在烧结的情况下观察该节目。\n\n样品1，如可以从图3中可以看出，1080℃在异常晶粒生长，未观察到，在形成由细晶粒的良好的金属结构。相反，当烧结温度为1100℃，如从图4中可以看出，并且观察到由已经异常晶粒生长产生的巨组织。在图5中，烧结温度1120℃，它是许多更大规模的结构观察。\n\n在另一方面，在样品4中加入的Zr，如从图中可以看出6-8，异常晶粒生长被抑制，即使在图8所示的烧结温度为1120℃，基本上块状组织中观察到我不能。\n\n接着，通过EPMA每个样品2的在图烧结磁体6的反射电子图像9-13（烧结温度1040℃）（BEI：图中的上左侧），并且该组合物的图像（钕（图右上）示出了B（图中的下左）和添加元素M（在图中底部右侧））。因为低的0.95％（重量）B的含量，积分相位（偏析）的乙没有观察到两种样品中，可以看出，不形成硼化物。量也不会被重添加剂元素M的（Ti，V，Nb和Mo）的观察到的0.1％的累积相位。关于相对小的Ti原子量观察小偏析。\n\n如可以从上面的结果，B的含量少，并且，添加元素M的量可以看出，如果微量，可以看出的是，硼化物不析出。更重要的是，这违背了传统的技术常识，这是为了抑制异常晶粒生长所需的硼化物，可以抑制异常晶粒长大，即使没有沉淀硼化物，发现它是。\n\n为了比较，图14，R（的Nd：20.3％（重量），镨6.0％（重量），镝：5.0重量％）：英寸31.3重量％以下，Co：0.90质量％，Al：0.20质量％，Cu： 0.10重量％以下，Zr：0.07质量％，B：0.99重量％，余量：示出了用具有Fe和不可避免的杂质的组合物EPMA烧结磁铁观察的结果。如从图14中可以看出，该烧结磁体具有形成的Zr积分相位的B的含量高，积分相位和B。\n\n因此，根据本发明，通过添加Zr，以B含量少的组合物，而不产生硼化物相，能够抑制异常晶粒生长。因此，抑制矫顽力的降低，并且能够通过抑制在主相的体积率的降低，以获得具有改进的一R-T-B系烧结磁体的剩余磁通密度。\n\n（实验例2）\n\n以相同的方式，制备具有表3所示组成的磁体与实验例1。然而，如果为了减少包含在烧结磁体的氧的量在管理研磨步骤至50ppm或更低的气氛气体中的氧浓度。通过烧结样品7以这种方式在表4所示的各种温度下烧结获得的20获得的磁体的评价结果​​。以相同的方式与实验例1进行评价表4中所示的各项目。\n\n如从表4的结果可以看出，独立地从B积分相位或Zr集成相的存在产生的异常晶粒生长。另外，Zr的添加，可以看出，不管Zr的集成相存在的异常晶粒生长的被抑制。\n\n烧结密度，如果在1020℃时，7.46〜7.49Mgm-3烧结任何样品中，真密度：约7.55Mgm-3，其是烧结稍显不足。相反，当烧结温度为1040℃〜1080℃，对于任何样品中，烧结密度已达到7.54〜7.57Mgm-3。因此，在烧结温度1020℃，烧结不足的剩余磁通密度是低成为问题。\n\n因此，在确保的烧结密度减小不剩余磁通密度的问题，为了抑制异常晶粒生长和矩形比的降低，对于样品7不添加Zr 11的是优选的烧结温度将是1040℃时不只有一个条件。虽然矩形比样品7是在0.9以上，是不优选的，因为了Hk和HcJ的值是小的。相反，对于样品12到20用添加Zr，1080℃的被抑制在烧结温度，烧结温度范围和1040℃〜1080℃的异常晶粒生长的发生，并且矩形比降低它正在扩大其在高温侧。因此，样品12〜20，比样品7-11，可以在工业上稳定地制造。\n\n接着，参照图15，示出了B含量和磁特性之间的关系。图15是表示组织样品7 20为B含量的磁特性的结果的曲线图，横轴表示B含量，纵轴，上剩余磁通密度Br，低级侧矫顽力HcJ一。\n\n如可从图15中可以看到的那样，残留磁通密度的由不含Zr的11样品7的峰值，B含量约为0.96％（重量）。这是因为如果B含量超过约0.96％（重量），这是因为富B相无助于磁性（Nd1.1Fe4B4化合物相）增加。由于矫顽力不受富B相，它甚至没有B的含量超过0.96％（重量）减少。\n\n在另一方面，当B含量小于约0.96重量％，富B相不产生，Nd2Fe17相析出。由于这Nd2Fe17相是软相（主相硬磁性相）中，当Nd2Fe17相析出，另外，由于主相的体积分数通过Nd2Fe17相残留的沉淀降低了矫顽力迅速减小的磁通密度也降低。\n\n样品含Zr时，矫顽力的值虽然比样品7-11越高，剩余磁通密度B的含量小于约0.96％（重量）12-16作为样品7-11减小。另外，B含量超过约0.96％（重量）的剩余磁通密度降低，尤其是，减少的量是比样品7-11，其中B的含量不含有Zr超过0.98％（重量）以上。这是因为当在含Zr过量存在样品B，因为含Zr为ZrB 2或Zr的钕-B或Zr-Fe-B系硼化物析出。即，Zr的添加是通过抑制异常晶粒生长间接提高磁特性，但没有效果，直接改善磁特性，而是，该组合物范围B的含量超过0.98％（重量）因此可以看出，显著降低残余磁通密度。\n\n除了添加Zr，痕量在样品17-20的Ga量（0.04质量％）加入，B含量被消除降低并且在剩余磁通密度的矫顽力在一个小的组成范围的减小大于0.96％（重量），剩余磁通密度的范围为最大B量在低含量侧大大扩展，烧结温度的范围也可以得到具有优异的磁特性和宽烧结磁体。当B含量为0.95质量％或更低时，通过在Zr添加之外进一步添加Ga而获得的这种效果是显着的。\n\n顺便说一下，在图15中，但B含量示出了0.90质量％以上的结果，如果B含量超过0.85重量％以下，Zr的添加效果和Ga的添加效果是公认的。当然，例如，B含量优选为0.90质量％以上且0.98质量％以下。\n\n（实验例3）\n\n以相同的方式如在实验例1的Nd：22.0％（重量），镨6.2％（重量），镝：2.0重量％以下，Co：1.8质量％，Cu：0.10质量％，B：0.94％（重量），Ga0.05重量％ ，Zr：X（0~4）质量％，余量：在各种烧结温度下制备Fe和不可避免的杂质，并评价磁性能。实验例3中制备的烧结磁体的氧含量在0.38至0.41质量％的范围内。\n\n图16是显示在1060℃和1080℃的两种烧结温度条件下Zr含量与磁性之间的关系的图。在水平轴Zr的含量，并且垂直轴，以便从顶部（外部磁场的一个值时，磁化变为90％，剩余磁通密度Br的）HK，一矫顽力HcJ和剩余磁通密度Br。\n\n如可从图16中可以看出，Zr含量为偶数量轨迹作为0.01重量％，若烧结温度高，观察到提高了矫顽力HcJ的效果。在另一方面，由于在剩余磁化和Zr含量的降超过0.3质量％变得显着，Zr含量看出，优选的是调整为0.3重量％或更低。\n\n[工业适用性]\n\n根据本发明，抑制矫顽力的降低，并且，能够获得具有改进的剩余磁通密度的R-T-B系烧结磁体。本发明的稀土类烧结磁铁的烧结温度范围宽，因此可以在工业上稳定地制造。根据本发明的稀土烧结磁体特别适用于诸如高性能需求高的各种电动机和致动器的应用。');
INSERT INTO `os_patent_instruction_text` VALUES (13035, 22864, '【0001】明 細 書\n\n【0002】R— T一 B系焼結磁石および希土類合金 技術分野\n\n【0003】本発明は、 R— T一 B系焼結磁石およびその原料となる希土類合 金に関する。 背景技術\n\n【0004】高性能永久磁石として代表的な R— T一 B系焼結磁石 （ 「ネオジ ム 。鉄 · ボロン系焼結磁石」 と呼ばれることもある。 ） は、 優れた 磁気特性を有することから、 各種モータ、 ァクチユエ一夕など様々 な用途に使用されている。\n\n【0005】R— T— B系焼結磁石は、 主に R2F e14B型結晶構造を有する 化合物からなる主相 （R2F e14B化合物相） 、 Rリッチ相、 およ び Bリツチ相から構成されている。 R— T一 B系焼結磁石の基本的 な組成は、 例えば、 米国特許第 4， 7 7 0 , 7 2 3号明細書および 米国特許第 4， 7 9 2 , 3 6 8号明細書に記載されている。 R— T 一 B系焼結磁石は種々の磁石の中で最も高い最大磁気エネルギー積 を有するものの、 さらなる高性能化、 特に、 残留磁束密度の向上が 望まれている。 例えば、 残留磁束密度を 1 %向上できるだけでもェ 業的な価値は高い。 米国特許第 4, 7 7 0 , 7 2 3号および米国特 許第 4， 7 9 2 , 3 6 8号の開示内容の全てを参考のために本明細 書に援用する。\n\n焼結磁石の残留磁束密度を高めるためには、 焼結磁石の密度 ( 「焼結密度」 ということがある。 ） を真密度に近づけることが必 要である。 そこで、 R_T— B系焼結磁石の密度を向上するために. 焼結温度を高くする、 あるいは、 焼結時間を長くすると、 焼結密度 は上昇するものの、 結晶粒が粗大になり、 保磁力が低下するという 問題が生じる。 特に、 局所的に巨大な結晶粒 （主相） が形成される 「異常粒成長」 が起こると、 減磁曲線における角形比 （HkZH c J ) が低下し、 実用上支障が生じる。\n\n【0006】すなわち、 R— T一 B系焼結磁石の保磁力を犠牲にすることなく 焼結密度を高めることは困難であり、 また、 性能のバランスが取れ る焼結条件が見つかったとしても、 そのマ一ジンは狭く、 性能の優 れた R— T一 B系焼結磁石を工業的に安定に製造することは非常に 困難であった。\n\n【0007】特開昭 6 1— 2 9 5 3 5 5号公報および特開 2 0 0 2— 7 5 7 1 7号公報には、 T iや Z rなどの硼化物を生成する元素を添加し、 粒界に硼化物を析出させることによって、 異常粒成長を抑制する技 術が開示されている。 特開昭 6 1— 2 9 5 3 5 5号公報および特開 2 0 0 2 - 7 5 7 1 7号公報に記載されている方法によると、 結晶 粒径が過大になるのを抑制しつつ、 すなわち保磁力の低下を抑制し つつ、 焼結密度を高めることができる。\n\n【0008】しかしながら、 上記特開昭 6 1— 2 9 5 3 5 5号公報および特開 2 0 0 2 - 7 5 7 1 7号公報に記載されている方法によると、 焼結 磁石中に、 磁力を有しない硼化物相 （Bリッチ相） が存在するため\n\nに、 磁性をつかさどる主相 （R2T14B型化合物相） の体積比率が 低下する結果、 残留磁束密度が低下する。 発明の開示\n\n【0009】本発明はかかる諸点に鑑みてなされたものであり、 本発明の目的 は、 保磁力の低下を抑制し、 且つ、 主相の体積比率の低下を抑制す ることによって残留磁束密度を向上させた R— T— B系焼結磁石を 提供することにある。\n\n【0010】本発明の希土類焼結磁石は、 主相が R2T！4B型化合物相を含む 希土類焼結磁石であって、 2 7質量％以上 3 2質量％以下の範囲内 の R (N d、 P r、 T bおよび D yからなる群から選択される少な くとも 1種の希土類元素であって、 N dまたは P rの少なくとも一 方を必ず含む） と、 6 0質量％以上 7 3質量％以下の範囲内の T (F e、 または、 F e と C oとの混合物） と、 0. 8 5質量％以上 0. 9 8質量％以下の範囲内の Q (B、 または、 Bと Cとの混合物 であり、 質量％の計算においては原子数基準で Bに換算される。 ) と、 0質量％超0. 3質量％以下の Z rと、 2. 0質量％以下の添 加元素 M (A 1、 C u、 G a、 I nおよび S nからなる群から選択 される少なくとも 1種の元素） と、 不可避不純物とを含む。\n\n【0011】ある実施形態において、 Qの集積相を実質的に有しない。\n\n【0012】ある実施形態において、 前記添加元素は G aを含み、 0. 0 1質 量％以上 0. 0 8質量％以下の範囲内の G aを含む。\n\n【0013】ある実施形態において、 0. 9 5質量％以下の Qを含む。\n\n【0014】ある実施形態において、 0. 9 0質量％以上の Qを含む。\n\nある実施形態において、 減磁曲線における角形比 （H k/H c J ) が 0. 9以上である。\n\n【0015】本発明の希土類合金は、 主相が R2T14B型化合物相を含む希土 類焼結磁石用の原料合金であって、 2 7質量％以上 3 2質量％以下 の範囲内の R (N d、 P r、 T bおよび D yからなる群から選択さ れる少なくとも 1種の希土類元素であって、 N dまたは P rの少な くとも一方を必ず含む） と、 6 0質量％以上 7 3質量％以下の範囲 内の T (F e、 または、 F eと C oとの混合物） と、 0. 8 5質 量％以上 0. 9 8質量％以下の範囲内の Q (B、 または、 Bと Cと の混合物） と、 0質量％超 0. 3質量％以下の Z r と、 2. 0質 量％以下の添加元素 （A し C u、 G a、 I nおよび S nからなる 群から選択される少なくとも 1種の元素） と、 不可避不純物とを含 む。\n\n【0016】ある実施形態において、 Qの集積相を実質的に有しない。\n\n【0017】ある実施形態において、 前記添加元素は G aを含み、 0. 0 1質 量％以上 0. 0 8質量％以下の範囲内の G aを含む。\n\n【0018】ある実施形態において、 0. 9 5質量％以下の Qを含む。\n\n【0019】本発明によると、 硼化物相を生成させることなく、 異常粒成長を 抑制することができるので、 保磁力の低下を抑制し、 且つ、 残留磁 束密度を向上させた R— T— B系焼結磁石が得られる。 図面の簡単な説明\n\n【0020】図 1は、 試料 1から 6の減磁曲線を示す図である。\n\n図 2は、 試料 1と試料 4について、 焼結温度と磁気特性との関係 を示すグラフである。\n\n【0021】図 3は、 試料 1を 1 0 8 0 °Cで焼結した場合の金属組織を偏光顕 微鏡で観察した結果を示す写真である。\n\n【0022】図 4は、 試料 1を 1 1 0 0 °Cで焼結した場合の金属組織を偏光顕 微鏡で観察した結果を示す写真である。\n\n【0023】図 5は、 試料 1を 1 1 2 0 °Cで焼結した場合の金属組織を偏光顕 微鏡で観察した結果を示す写真である。\n\n【0024】図 6は、 試料 4を 1 0 8 0 °Cで焼結した場合の金属組織を偏光顕 微鏡で観察した結果を示す写真である。\n\n【0025】図 7は、 試料 4を 1 1 0 0 °Cで焼結した場合の金属組織を偏光顕 微鏡で観察した結果を示す写真である。\n\n【0026】図 8は、 試料 4を 1 1 2 0 °Cで焼結した場合の金属組織を偏光顕 微鏡で観察した結果を示す写真である。\n\n【0027】図 9は、 試料 2の焼結磁石の E P M Aによる反射電子像 （B E\n\n【0028】I ： 各図中の左上） 、 および、 組成像 （N d (図中右上） 、 B (図 中左下） および添加元素 T i (図中右下） ） を示す図である。\n\n【0029】図 1 0は、 試料 3の焼結磁石の E P M Aによる反射電子像 （B E I ： 各図中の左上） 、 および、 組成像 （N d (図中右上） 、 B (図 中左下） および添加元素 V (図中右下） ） を示す図である。\n\n【0030】図 1 1は、 試料 4の焼結磁石の E P M Aによる反射電子像 （B E I ： 各図中の左上） 、 および、 組成像 （N d (図中右上） 、 B (図 中左下） および添加元素 Z r (図中右下） ） を示す図である。\n\n図 1 2は、 試料 5の焼結磁石の E PMAによる反射電子像 （B E I ： 各図中の左上） 、 および、 組成像 （N d (図中右上） 、 B (図 中左下） および添加元素 N b (図中右下） ） を示す図である。\n\n【0031】図 1 3は、 試料 6の焼結磁石の E PMAによる反射電子像 （B E I ： 各図中の左上） 、 および、 組成像 （N d (図中右上） 、 B (図 中左下） および添加元素 Mo (図中右下） ） を示す図である。\n\n【0032】図 1 4は、 比較試料の焼結磁石の E PMAによる反射電子像 （B E I ： 各図中の左上） 、 および、 組成像 （N d (図中右上） 、 B (図中左下） および添加元素 Z r (図中右下） ） を示す図である。 図 1 5は、 試料 7から 2 0の磁気特性を B含有率について整理し た結果を示すグラフであり、 横軸は B含有率であり、 縦軸は、 上側 が残留磁束密度 B r、 下側が保磁力 H c Jである。\n\n【0033】図 1 6は、 焼結温度が 1 0 6 0 °Cおよび 1 0 8 0 °Cの 2条件につ いて、 Z r含有率と磁気特性との関係を示すグラフである。 発明を実施するための最良の形態\n\n【0034】本発明者は、 B含有率が 0. 9 8質量％以下の R2T14B系希土 類焼結磁石に、 0. 3質量％以下の Z rを添加することによって、 硼化物相を生成させることなく、 異常粒成長を抑制することができ ることを見出し、 本発明を想到するに至った。\n\n【0035】本発明の実施形態による R2T14B系希土類焼結磁石は、 2 7質 量％以上 3 2質量％以下の範囲内の希土類元素 R (N d、 P r、 T bおよび D yからなる群から選択される少なくとも 1種の希土類元 素であって、 N dまたは P rの少なくとも一方を必ず含む） と、 6\n\n0質量％以上 7 3質量％以下の範囲内の T (F e、 または、 F eと C oとの混合物） と、 0. 8 5質量％以上 0. 9 8質量％以下の範 囲内の Bと、 0質量％超0. 3質量％以下の Z rと、 2. 0質量％ 以下の添加元素 M (A し C u、 G a、 I nおよび S nからなる群 から選択される少なくとも 1種の元素） と、 不可避不純物とを含む, Rは希土類元素であって、 N d、 P r、 D y、 T bのうち少なく とも 1種から選択される。 ただし、 Rは、 N dまたは P rのいずれ か一方を必ず含む。 好ましくは、 N d— D y、 N d— T b、 N d— P r _D y、 または N d— P r— T bで示される希土類元素の組合 わせを用いる。 希土類元素のうち、 D yや T bは、 特に保磁力の向 上に効果を発揮する。 また、 Rは純元素でなくてもよく、 工業上入 手可能な範囲で、 製造上不可避な不純物を含有するものでも差し支 えない。 含有率は、 2 7質量％未満では高磁気特性、 特に高保磁力 が得られず、 3 2質量％を超えると残留磁束密度が低下するため、 2 7質量％以上 3 2質量％以下とする。\n\n【0036】Tは、 F eを必ず含み、 その一部、 好ましくは 5 0 %以下を C o で置換することができる。 また、 F eや C o以外の少量の遷移金属 元素を含有することができる。 C oは温度特性の向上、 耐食性の向 上に有効であり、 通常は、 1 0質量％以下の C oおよび残部 F eの 組合わせで用いる。 含有率は、 6 0質量％未満では残留磁束密度が 低下し、 7 3質量％を超えると保磁力の低下を来たすので、 6 0質 量％以上 7 3質量％以下とする。\n\n【0037】Z rは、 本発明の必須元素である。 以下に実験例を示して説明す るように、 Z rは特有の効果を発揮する。 Z rは主相の希土類サイ\n\nトを置換して固溶し、 結晶成長速度を低下させることによって、 異 常粒成長を抑制する。 すなわち、 特開昭 6 1— 2 9 5 3 5 5号公報 および特開 2 0 0 2— 7 5 7 1 7号公報に記載されているように、 異常粒成長を抑制するためには硼化物が必要であるという従来の技 術常識に反し、 硼化物を析出させなくても異常粒成長を抑制できる. ということを本発明者が初めて知見した。 Z rを添加することによ つて、 残留磁束密度を低下させる要因となる硼化物相を必要とせず. 従来の組成では異常粒成長が起こるような温度および Zまたは時間 で焼結することが可能となり、 微細組織を維持したままで焼結密度 を高めることができる。 本発明の実施形態によると、 正方晶 R2T14B型結晶構造を有する主相が磁石体積の 9 0 %以上を占め、 か つ Bリツチ相 （Q集積相 ： 例えば R L ェ F e4B4相） を実質的に 含まない組織が得られる。\n\n【0038】ここで、 「実質的に含まない」 とは、 磁石の組織を、 無作為に選 択した 1 0以上の部分について E PMAを用いて観察した結果、 9 0 %以上の部分において、 Q集積組織が認められないことを意味し. また、 「Q集積相が認められない」 とは、 E PMA (例えば島津製 作所製 E PMA (E PM 1 6 1 0) を用いて条件 （加速電圧： 1 5 k V、 ビーム径 ： 1 m、 電流値 ： 3 0 n A (ファラデ一力ップ） . 分光結晶 ： L S A 2 0 0) で硼素 （B) の蛍光 X線像 （ B— Κ α ) を観察した際に、 1 0 0 /mX 1 0 0 mの視野において、 輝点が 集中している部分 （すなわち集積相と帰属される部分） の総面積が 視野全体の 5 %未満の場合を言うものとする。\n\nただし、 Z r含有率が 0. 3質量％を超えると、 残留磁束密度が 低下するので、 その含有率は 0. 3質量％以下とする。 また、 過剰 の Bが存在すると硼化物相が形成されるので、 硼化物相の形成を抑 制するために Bの含有率を 0. 9 8質量％以下とする。 なお、 Bの 一部を Cに置換することができる。 B、 または、 Bと Cとの混合物 を Qとしてあらわすと、 Qの含有率 （質量％) の計算においては、 Bの一部を置換した Cを原子数基準で Bに換算して求めればよい。 添加元素 Mは、 A l 、 C u、 G a、 I nおよび S nのうちの少な くとも 1種の元素である。 添加量は 2. 0質量％以下が好ましい。\n\n【0039】2. 0質量％を超えると残留磁束密度が低下するためである。 添加元素の中でも G aは特有の効果を発揮する場合がある。 後に 実験例を示して説明するように、 B (Q) の含有率が低くなると軟 磁性の R2T i7化合物が生成され、 保磁力および残留磁束密度が低 下することがある。 このような組成範囲において G aを極微量添加 すると、 軟磁性相の生成が抑制され、 B含有率の広い範囲で保磁力 および残留磁束密度が高い希土類焼結磁石が得られる。 本発明は、 Z r硼化物の生成を抑制するために Bを 0. 9 8質量％以下とする 場合に特に有効である。\n\n【0040】G aの添加による効果は、 B (Q) の含有率が 0. 9 5質量％以 下の場合に顕著であり、 また、 B (Q) の含有率が 0. 9 0質量％ 以上の場合に顕著である。 なお、 G a含有率が 0. 0 1質量％未満 では上記の効果が得られないことがあり、 また、 分析による管理が 困難となる。 一方、 G a含有率が 0. 0 8質量％を超えると、 残留 磁束密度 B rの低下を招く場合があるため好ましくない。\n\n本発明では、 上記元素以外に不可避的不純物を許容することがで きる。 例えば、 F eの原料から混入する M n、 C rや、 F e— B (フエロボロン） から混入する A 1 、 S iや、 製造工程上不可避的 に混入する H、 Nおよび〇などである。\n\n【0041】また、 焼結磁石においては、 酸素 ： 0 . 5質量％以下、 窒素： 0 ,\n\n【0042】2質量％以下、 水素： 0 . 0 1質量％以下であることが好ましい。 このように酸素、 窒素、 および水素濃度の上限を制限することによ り、 主相比率を高めることができ、 残留磁束密度 B rを高めること ができる。\n\n【0043】本発明による実施形態の R - T一 B系焼結磁石は公知の方法で製 造され得る。 例えば以下の方法で製造することができる。\n\n【0044】まず、 所定の組成を有する母合金の溶湯を例えば高周波溶解法で 作製し、 この溶湯を冷却 ·凝固して合金（母合金） を作製する。 母 合金の組成は、 希土類焼結磁石が上記の組成となるように調整する, 合金 （母合金） の製造は、 公知の一般的な方法を採用して行うこと ができる。 各種の合金製造方法の中でも、 ストリップキャスト法な どの急冷法が好適に用いられる。 ストリツプキャスト法によれば、 例えば厚さ 0 . 1 m m〜 5 m m程度の合金铸片を得ることができる 【0045】0\n\nとがあり、 Z rを効率的に添加することが難しい。 また、 Z r硼化 物等が一旦析出すると、 熱処理によって消失させることが困難であ り、 焼結後も残存する。 従って、 このような凝固合金から作製した 焼結磁石は、 急冷合金を用いた場合に比べ、 主相体積比率が低くな り易く、 その結果として残留磁束密度 B rが小さくなることがある, 得られた合金を公知の方法によって平均粒径 1〜 1 0 mに粉砕 する。 このような合金の粉末は、 粗粉砕工程と微粉砕工程の 2種類 の粉砕を行うことによって好適に作製され得る。 粗粉砕は、 水素吸 蔵粉砕法や、 ディスクミルなどを用いた機械的粉砕法によって行う ことができる。 また、 微粉碎は、 ジェッ トミル粉砕法、 ポールミル. ァトライターなどの機械的粉砕法によって行うことができる。\n\n【0046】上記の粉砕によって得られた微粉碎粉は、 公知の成形技術を用い て様々な形状の成形体に成形される。 成形は、 磁場中圧縮成形法を 用いて行うことが一般的であるが、 パルス配向した後静水圧成形や ゴムモールド内で成形する方法を用いて行っても良い。\n\n【0047】成形時の給粉の能率、 成形密度の均一化、 成形時の離型性などを 向上させるために、 脂肪酸エステルなどの液状潤滑剤ゃステアリン 酸亜鉛などの固体状潤滑剤を微粉碎前の粉末および Zまたは微粉碎 後の粉末に添加してもよい。 添加量は、 合金粉末 1 0 0重量部に対 して、 0 . 0 1重量部〜 5重量部が好ましい。\n\n【0048】成形体は、 公知の方法によって焼結することができる。 焼結温度 は 1 0 0 0 〜 1 1 8 0 °C、 焼結時間は 1〜 6時間程度が好ましい, 本発明による実施形態の合金は、 Z rの添加により従来よりも高い 温度で焼結することができるので、 従来は温度ばらつきなどを考慮\n\nすると量産には採用することが困難であった、 例えば、 1 1 0 0 °C 以上の焼結温度を採用することができる。 焼結後の焼結体には、 必 要に応じて熱処理 （時効処理） を施す。 熱処理条件は、 例えば、 温 度 4 0 0 °C〜 6 0 0 ：、 時間 1〜 8時間程度が好ましい。\n\n【0049】以下、 実験例を示して本発明を更に詳細に説明する。\n\n【0050】(実験例 1 )\n\n【0051】表 1に示す各組成の磁石 （試料 1〜 6 ) を以下の手順で作製した, なお、 表 1に示した組成は、 得られた焼結磁石の分析値であり、 母 合金の組成とは異なる。 組成分析は、 島津製作所製 I C Pおよび堀 場製作所製ガス分析装置を用いて公知の方法で行った。\n\n【0052】なお、 表 1において F eを残部として表したが、 残部は F eと微\' 量の不可避不純物とを含む。 後述する表 3においても同じ。\n\n【0053】本実験例の試料における Bの含有量は、 いずれの試料についても- R量および T量に対する化学量論量にほぼ一致する。 また、 添加元 素 Mを無視して各相の体積比率を計算すると、 主相 （N d2F e14B化合物相） ： 94. 4 %、 Rリッチ相 ： 2. 5 %、 Bリッチ相 ： 0. 1 %、 R酸化物相 （N d2〇3) : 3. 0 %となる。\n\n【0054】所定の組成の母合金の溶湯を調製し、 ストリツプキャスト法を用 いて、 厚さが 0. 2から 0. 4mm程度の合金鎳片を作製した。 得られた合金铸片を常温で絶対圧力 0. 2 MP aの水素雰囲気で\n\n【0055】2時間保持し、 合金に水素を吸蔵させた。\n\n【0056】水素吸蔵した合金を真空中にて約 6 0 0 °Cで 3時間保持した後、 室温まで冷却した。\n\n得られた合金は水素脆化により崩壊しているが、 これをふるいに 掛けることによって解碎し、 粒径が 42 5 m以下の粗粉末を得た, 得られた粗粉末をジエツ トミル粉砕装置を用いて、 窒素ガス雰囲 気中で微粉砕した。 得られた粉末の平均粒径は、 いずれの試料につ いても、 F S S S測定で 3. 2 ^m以上 3. 5 ^m以下の範囲であ つ 7こ。\n\n【0057】得られた粉末をプレス成形することによって、 成形体を得た。 こ こでは、 約 1 T (テスラ） の直角磁界を印加しながら、 1 9 6 MP aの圧力で成形した。\n\n【0058】得られた成形体を種々の温度条件で約 2時間焼結することによつ て、 焼結体を得た。\n\n【0059】得られた焼結体を A r雰囲気中、 5 5 0 で 2時間の時効処理を 施したものを、 それぞれ焼結磁石の試料とし、 磁気特性を評価した, さらに、 4 0 0 °Cにて不活性雰囲気で熱消磁した後、 金属組織観 察および化学分析を行った。\n\n【0060】3\n\n[表 1 ]\n\n【0061】(質量％)\n\n【0062】図 1に各試料の減磁曲線を示す。 ここで用いた試料の焼結条件は. 1 1 2 0 °C、 2時間である。\n\n【0063】図 1から明らかなように、 添加元素 Mを含まない試料 1の角形性 は著しく悪い。 これは、 以下に説明するように、 試料 1にとつて、 1 1 2 0 °Cは焼結温度として高すぎるために、 異常粒成長が起こつ たためである。 添加元素 Mとして、 T i 、 V、 N bおよび M oを添 加した試料 2 、 3 、 5および 6は、 試料 1よりも良好な角形性を有 しているものの、 Z rを添加した試料 4には及ばない。 試料 4の減 磁曲線の角形性は非常に良好である。 この結果から、 Z rが特異な 効果を発揮していることがわかる。\n\n次に、 図 2を参照しながら、 試料 1 と試料 4について、 焼結温度 と磁気特性との関係を説明する。 図 2は、 横軸に焼結温度をとり、 縦軸に、 上から順に、 角形比 （H k/H c J ) 、 保磁力 H e J、 お よび残留磁束密度 B rをとつたグラフである。 角形性の指標として ここで用いた角形比 （H kZH c J ) の H kは、 磁化が残留磁束密 度 B rの 9 0 %となるときの外部磁界の値を示す。 図 2に示したグ ラフから、 Z rを添加した試料 4 (図中△) は添加元素を含まない 試料 1に比べ、 良好な磁気特性が得られる焼結温度範囲の上限が約 2 0°C上昇していることがわかる。 その結果、 焼結温度を 1 1 2 0 °C ( 1 3 9 3 K) としても、 角形比は 0. 9以上あり、 非常に良 好な角形性を有している。\n\n【0064】次に、 表 2を参照しながら、 焼結温度、 角形性および異常粒成長 の関係を説明する。 なお、 表 2中の粒径欄の〇は異常粒成長が無い ことを示し、 Xは異常粒成長が有ることを示している。 表 2から分 かるように、 添加元素を含まない試料 1は既に 1 1 0 0 °Cで異常粒 成長が見られるとともに角形比 （H k/H c J ) の値も低いのに対 し、 Z rを添加した試料 4では 1 1 2 0 でも異常粒成長は認めら れず、 且つ、 角形比も 0. 9以上の高い値を有している。 また、 試 料 2、 3、 5および 6の結果からわかるように、 他の添加元素 （T i、 V、 N bおよび M o) も l l l O までは、 異常粒成長を抑制 する効果を有し、 高い角形比を維持できるものの、 1 1 2 0 °Cの結 果をみると明らかなように、 その効果は、 Z rには及ばない。\n\n[表 2 ]\n\n【0066】粒径 ： 〇は異常粒成長無し、 Xは異常粒成長有り 次に、 異なる温度で焼結した試料 1および試料 4の金属組織を偏 光顕微鏡で観察した結果を図 3から図 8に示す。 図 3から図 5は、 試料 1を 1 0 8 0 ° (：、 1 1 0 0 °Cおよび 1 1 2 0 °Cで焼結した場合, 図 6から図 8は、 試料 4を 1 0 8 0 °C、 1 1 0 0 ぉょび 1 1 2 0 °Cで焼結した場合の観察結果を示している。\n\n【0067】試料 1では、 図 3からわかるように、 1 0 8 0ででは異常粒成長 はみられず、 微細な結晶粒からなる良好な金属組織が形成されてい る。 これに対し、 焼結温度が 1 1 0 0 °Cの場合、 図 4からわかるよ うに、 既に異常粒成長によって生成された巨大な組織が観察されて いる。 焼結温度が 1 1 2 0 °Cの図 5では、 さらに多くの巨大組織が 観察されている。\n\n【0068】一方、 Z rを添加した試料 4では、 図 6から図 8からわかるよう に、 異常粒成長が抑制されており、 図 8に示す焼結温度が 1 1 2 0 °Cの場合でも、 実質的に巨大組織は認められない。\n\n次に、 図 9から図 1 3にそれぞれ試料 2から 6の焼結磁石 （焼結 温度 1 0 4 0 °C) の E P MAによる反射電子像 （B E I ： 各図中の 左上） 、 および、 組成像 （N d (図中右上） 、 B (図中左下） およ び添加元素 M (図中右下） ） を示す。 いずれの試料も Bの含有率が 0. 9 5質量％と低いため、 Bの集積相 （偏析） は認められず、 硼 化物が形成されていないことが分かる。 また、 添加量が 0. 1質 量％の添加元素 M (T i、 V、 N bおよび Mo) の集積相も認めら れない。 なお、 原子量が比較的小さい T i については若干の偏析が 認められる。\n\n【0069】上記の結果から分かるように、 Bの含有量が少なく、 且つ、 添加 元素 Mの添加量が微量であれば、 硼化物が析出しないことがわかる, さらに重要なことは、 異常粒成長を抑制するためには硼化物が必要 であるという従来の技術常識に反し、 硼化物を析出させなくても異 常粒成長を抑制できる、 ということがわかったことである。\n\n【0070】なお、 比較のために、 図 1 4に、 R (N d : 2 0. 3質量％、 P r ： 6. 0質量％、 D y : 5. 0質量％) : 3 1. 3質量％、 C o : 0. 9 0質量％、 A 1 : 0. 2 0質量％、 C u : 0. 1 0質 量％、 Z r ： 0. 0 7質量％、 B ： 0. 9 9質量％、 残部： F eお よび不可避不純物の組成を有する焼結磁石を E P M Aを用いて観察 した結果を示す。 図 1 4からわかるように、 Bの含有率が高いこの 焼結磁石には、 Z rの集積相および Bの集積相が形成されている。\n\n【0071】このように、 本発明によると、 B含有量が少ない組成に Z rを添 加することによって、 硼化物相を生成させることなく、 異常粒成長 を抑制することができる。 従って、 保磁力の低下を抑制し、 且つ、\n\n主相の体積比率の低下を抑制することによって残留磁束密度を向上 させた R— T一 B系焼結磁石を得ることができる。\n\n【0072】(実験例 2 )\n\n【0073】表 3に示す組成の磁石を実験例 1 と同様の方法で作製した。 ただ し、 ここでは焼結磁石中に含まれる酸素量を低減するために、 微粉 砕工程における雰囲気ガス中の酸素濃度を 5 0 p p m以下に管理し た。 このようにして得られた試料 7〜 2 0を種々の焼結温度で焼結 することによって得られた磁石を評価した結果を表 4に示す。 表 4 に示す各項目の評価は実験例 1 と同様の方法で行った。\n\n【0074】8\n\n6 T\n\n【0076】[ ε拏]\n\n【0077】£ LU0/ 00Zdr/13d 08SST0/S00Z OAV\n\n[表 4 ]\n\n【0079】集積相有無 ： 〇は集積相無し、 Xは集積相有り、 *は B集積相と混在 粒径： 〇は異常粒成長無し、 Xは異常粒成長有り 表 4の結果からわかるように、 異常粒成長は、 B集積相や Z r集 積相の有無とは無関係に発生する。 また、 Z rの添加により、 Z r の集積相の有無とは無関係に異常粒成長が抑制されていることがわ かる。\n\n焼結密度は、 1 0 2 0 °Cで焼結した場合は、 いずれの試料につい ても 7. 4 6〜 7. 4 9 Mgm—3であり、 真密度 ： 約 7. 5 5 M gm—3に対し、 やや焼結不足である。 これに対し、 焼結温度が 1 0 4 0 °C〜 1 0 8 0 の場合、 いずれの試料についても、 焼結密度 は 7. 5 4〜 7. 5 7 M gm—3に達している。 このことから、 焼 結温度が 1 0 2 0 °Cでは焼結不足であり、 残留磁束密度が低いこと が問題となる。\n\n【0080】従って、 残留磁束密度の低下が問題とならない焼結密度を確保し つつ、 異常粒成長や角形比の低下を抑制するためには、 Z rを添加 していない試料 7から 1 1については、 好ましい焼結温度は 1 0 4 0 °Cの一条件しかないことになる。 なお、 試料 7の角形比は 0. 9 以上あるが、 H kおよび H c Jの値が小さいため好ましくない。 こ れに対し、 Z rを添加した試料 1 2〜 2 0については、 1 0 8 0 °C の焼結温度においても異常粒成長の発生や角形比の低下が抑制され ,ており、 焼結温度範囲は 1 0 4 0 °C〜 1 0 8 0 °Cと高温側に拡大し ている。 従って、 試料 1 2〜 2 0は、 試料 7〜 1 1よりも、 工業的 に安定に製造することができる。\n\n【0081】次に、 図 1 5を参照しながら、 B含有率と磁気特性との関係を説 明する。 図 1 5は試料 7から 2 0の磁気特性を B含有率について整 理した結果を示すグラフであり、 横軸は B含有率であり、 縦軸は、 上側が残留磁束密度 B r、 下側が保磁力 H e Jである。\n\n【0082】図 1 5からわかるように、 Z rを含まない試料 7から 1 1の残留 磁束密度のピークは、 B含有率が 0. 9 6質量％付近にある。 これ は、 B含有率が約 0. 9 6質量％を超えると、 磁性に寄与しない B\n\n【0083】2\n\nリッチ相 （N dしXF e4B4化合物相） が増加するためである。 なお、 保磁力は Bリッチ相の影響を受けないので、 B含有率が約 0. 9 6質量％を超えても低下しない。\n\n【0084】一方、 B含有率が約 0. 9 6質量％よりも少ないと、 Bリッチ相 は生成せず、 N d2F e i7相が析出する。 この N d2F e17相は軟 磁性相 （主相は硬磁性相） であるため、 N d2F e i7相が析出する と保磁力が急激に低下し、 また、 N d2F e17相の析出によって主 相の体積分率が低下するので残留磁束密度も低下する。\n\n【0085】Z rを含む試料 1 2〜 1 6では、 保磁力の値は試料 7〜 1 1より も高いものの、 B含有率が約 0. 9 6質量％よりも小さいと残留磁 束密度は試料 7〜 1 1と同様に低下する。 また、 残留磁束密度は、 B含有率が約 0. 9 6質量％を超えると低下し、 特に、 B含有率が 0. 9 8質量％を超えると Z rを含まない試料 7〜 1 1よりも低下 量が大きくなる。 これは、 Z rを含む試料で Bが過剰に存在すると. Z r B2、 Z r— N d _ Bまたは Z r _ F e— Bという Z rを含む 硼化物相が析出するためである。 すなわち、 Z rの添加は、 異常粒 成長を抑制することによって間接的に磁気特性を改善するが、 磁気 特性を直接的に向上する効果はなく、 むしろ、 B含有率が 0. 9 8 質量％を超える組成範囲では、 残留磁束密度を大幅に低下させるこ とがわかる。\n\n【0086】Z r添加に加えて、 G aを極微量 （ 0. 0 4質量％) 添加した試 料 1 7〜 2 0では、 B含有率が 0. 9 6質量％よりも小さい組成範 囲における残留磁束密度の低下や保磁力の低下が解消され、 残留磁 束密度が最大となる B含有率の範囲が低含有率側に大幅に拡大し、\n\n焼結温度範囲も広く且つ磁気特性に優れた焼結磁石が得られる。 Z r添加に加えて G aをさらに添加することによって得られるこの効 果は、 B含有率が 0. 9 5質量％以下において顕著である。\n\n【0087】なお、 図 1 5には B含有率が 0. 9 0質量％以上の結果を示して いるが、 B含有率が 0. 8 5質量％以上あれば、 Z r添加効果およ び G a添加効果は認められる。 勿論、 例示したように、 B含有率が 0. 9 0質量％以上で 0. 9 8質量％以下であることが好ましい。\n\n【0088】(実験例 3 )\n\n【0089】実験例 1 と同様の方法で、 N d : 2 2. 0質量％、 P r : 6. 2 質量％、 D y ： 2. 0質量％、 C o ： 1. 8質量％、 C u ： 0. 1 0質量％、 B ： 0. 9 4質量％、 G a 0. 0 5質量％、 Z r ： X ( 0〜4) 質量％、 残部： F eおよび不可避不純物の組成を有する 焼結磁石を、 種々の焼結温度で作製し、 磁気特性を評価した。 なお， 実験例 3で作製した焼結磁石の酸素含有率は 0. 3 8〜 0. 4 1質 量％の範囲であった。\n\n【0090】図 1 6は、 焼結温度が 1 0 6 0 °Cおよび 1 0 8 0 °Cの 2条件につ いて、 Z r含有率と磁気特性との関係を示すグラフである。 横軸は Z r含有率で、 縦軸は上から順に、 H k (磁化が残留磁束密度 B r の 9 0 %となるときの外部磁界の値） 、 保磁力 H e Jおよび残留磁 束密度 B rである。\n\n【0091】図 1 6からわかるように、 Z r含有率が 0. 0 1質量％という極 微量であっても、 焼結温度が高い場合の保磁力 H c Jを改善する効 果が認められる。 一方、 Z r含有率が 0. 3質量％を越えると残留 磁化の低下が顕著となるので、 Z r含有率は 0. 3質量％以下に調\n\n整することが好ましいことが分かる。 産業上の利用可能性\n\n【0092】本発明によると、 保磁力の低下を抑制し、 且つ、 残留磁束密度を 向上させた R— T— B系焼結磁石が得られる。 本発明の希土類焼結 磁石は、 焼結温度のマージンが広いので、 工業的に安定に製造する ことができる。 本発明による希土類焼結磁石は、 各種モータ、 ァク チユエ一夕など高性能化のニーズが高い用途に特に好適に用いられ る。', '【0001】\n\n  【0002】R-T-B系统烧结磁体和稀土合金技术领域\n\n  R-T-B系烧结磁体及其稀土合金【0003】本发明涉及一种R-T-B系烧结磁体及其稀土合金。 背景技术\n\n  【0004】典型的高性能永磁体R-T-B系统烧结磁体（也称为“钕铁硼系统烧结磁体”）具有优异的磁性能。 因此，它被用于各种应用中，例如各种电动机和致动器。\n\n  【0005】RTB系烧结磁铁主要由R2Fe14构成，B型晶体结构为主相（R2F）。  e14B复合相），R富相和B富相。  R-T-B系统烧结磁体的基本组成在例如美国专利号4,770,723和美国专利号4,792,368中有所描述。 已经描述过了。 尽管RT-B烧结磁体在各种磁体中具有最高的最大磁能积，但是仍需要性能上的进一步改善，特别是剩余磁通密度的改善。 例如，即使可以将剩余磁通密度提高1％，也具有很大的工业价值。 美国专利第4,770,723号和美国专利第4,792,368号的所有公开内容均通过引用并入本文。\n\n 为了增加烧结磁体的剩余磁通密度，需要使烧结磁体的密度（有时称为“烧结密度”）接近真实密度。 因此，为了提高R_T-B系烧结磁铁的密度，提高烧结温度或增加烧结时间会增加烧结密度，但晶粒变粗，矫顽力增加。 问题出现了 特别地，当发生局部形成大晶粒（主相）的“异常晶粒生长”时，退磁曲线中的矩形比（HkZHcJ）减小，这引起实际问题。\n\n  【0006】即，在不牺牲RT-B系烧结磁铁的矫顽力的情况下，难以提高烧结密度，并且发现了使性能平衡的烧结条件。 但是，其余量狭窄，难以工业上生产性能优异的RTB烧结磁铁。\n\n  【0007】日本专利公开第6-12-29 5 3 5 5和2 0 0 2-7-5 7 1 7公开了形成硼化物的元素，例如T i和Z r。 通过添加硼并在晶界处析出硼化物，公开了一种抑制异常晶粒生长的技术。 根据日本专利特开No.61-2955355和205-2075717中描述的方法，可以防止晶粒尺寸变得过大。 即，可以在抑制矫顽力降低的同时提高烧结密度。\n\n  【0008】但是，根据上述JP-A-6 1-29 5 3 5 5和JP-A 20 0 2 -7 5 7 17中描述的方法 ，存在没有磁力的硼化物相（富B相）。\n\n 另外，控制磁性的主相（R2T14B型复合相）的体积比减小，结果，剩余磁通密度减小。 发明内容\n\n  【0009】鉴于上述要点而完成了本发明，并且本发明的目的是抑制矫顽力的降低和主相的体积比的降低，从而抑制残留磁通。 本发明的目的是提供一种密度提高的RT—B系烧结磁铁。\n\n  【0010】本发明的稀土烧结磁体的主相为R2  4含有B型化合物相的稀土类烧结磁铁，其中R（N d，P r，T b和D y的范围为27质量％〜32质量％）。 至少选择一种稀土元素，并且必须至少包含N d和P r）和T（F e）之一，或 ，F e和C o）和Q（B或B和C的混合物在0.85质量％至0.98质量％的范围内，并且在质量％的计算中。 基于原子数转换成B。），Zr大于0质量％且小于等于0.3质量％，并且添加元素M（A 1，Cu，G a小于等于2.0质量％）。 选自由I n和S n组成的组中的至少一种元素和不可避免的杂质。\n\n  【0011】在一个实施例中，Q相基本上不存在。\n\n  【0012】在一个实施方式中，附加元素含有G a，且含有0.01质量％以上且0.08质量％以下的G a。\n\n  【0013】在一个实施方式中，其含有0.9质量％以下的Q。\n\n  【0014】在一个实施方式中，其含有0.9质量％以上的Q。\n\n 在一个实施例中，退磁曲线中的矩形比（Hk / HcJ）为0.9或更大。\n\n  【0015】本发明的稀土合金是稀土烧结磁体的原料合金，其主相含有R2T14B型化合物相，并且含有27质量％。 选自由R（N d，P r，T b和D y组成的组中的至少一种稀土元素在32质量％以上的范围内，并且N d或P r中的至少一种 必须包含），T（F e或F e和C o的混合物）在60质量％以上且73质量％以下，0.85质量％以上且0.98质量％以上的范围内。  Q（B或B和C的混合物）在不大于质量％，Zr大于0质量％且不大于0.3质量％，和添加元素不大于2.0质量％的范围内（A 选自C u，G a，In和S n的至少一种元素和不可避免的杂质。\n\n  【0016】在一个实施例中，基本上不存在Q相。\n\n  【0017】在一个实施方式中，上述附加元素含有G a，且含有G a为0.01质量％以上0.08质量％以下。\n\n  【0018】在一个实施方式中，含有0.95质量％以下的Q。\n\n  【0019】根据本发明，可以在不产生硼化物相的情况下抑制异常晶粒的生长，从而可以抑制矫顽力的降低并且可以改善残留磁通密度。 获得基于T-B的烧结磁体。 附图的简要说明\n\n  【0020】图1是示出样品1至6的退磁曲线的图。\n\n 图2是示出烧结温度与样品1和样品4的磁性能之间的关系的图。\n\n  【0021】图3是示出用偏光显微镜观察在108℃下烧结的样品1的金相组织的结果的照片。\n\n  【0022】图4是显示用偏光显微镜观察在1100℃下烧结的样品1的金相组织的结果的照片。\n\n  【0023】图5是示出用偏光显微镜观察在1120℃下烧结的样品1的金相组织的结果的照片。\n\n  【0024】图6是示出用偏光显微镜观察在108℃下烧结的样品4的金相组织的结果的照片。\n\n  【0025】图7是示出用偏光显微镜观察在110℃下烧结的样品4的金相组织的结果的照片。\n\n  【0026】图8是示出用偏光显微镜观察在1120℃下烧结的样品4的金属组织的结果的照片。\n\n  【0027】图9示出了反向散射电子图像（B E\n\n  【0028】I：各图中的左上方，以及构图图像（N d（图中的右上方），B（图中的左下方）和加法元素T i（图中的右下方））  ..\n\n  【0029】图10示出了样品3的烧结磁体的通过EPMA的反向散射电子图像（BEI：在每个图中的左上），以及成分图像（N d（在图中的右上），B（在图的左下）。  ）和附加元素V（在图中右下）。\n\n  【0030】图11示出了样品4的烧结磁体的通过EPMA的反向散射电子图像（BEI：在每个图中的左上），以及成分图像（N d（在图中的右上），B（在图的左下）。  ）和加法元素Z r（图中右下）。\n\n 图12显示了通过E PMA进行的样品5烧结磁体的反向散射电子图像（BEI：每个图的左上方），以及成分图（N d（图中的右上方），B（图中的左下方）和添加元素）。 图6是示出N b（图的右下）的图。\n\n  【0031】图13示出了由EPMA制备的样品6的烧结磁体的反向散射电子图像（BEI：在每个图中的左上），以及成分图像（N d（在图中的右上），B（在图中）。 图3是示出（左下）和添加元素Mo（图中的右下）的图。\n\n  【0032】图14示出了通过EPMA进行的比较样品的烧结磁体的反向散射电子图像（BEI：在每个图中的左上），以及组成图像（N d（在图中的右上），B（在图中）。 图3是示出（左下）和添加元素Zr（图中右下）的图。 图15是示出相对于B含量排列样品7至20的磁性能的结果的图，其中横轴为B含量，纵轴为上侧的磁通密度B r，下侧的磁通密度B r。 侧面是矫顽力H cJ。\n\n  【0033】图16是示出在1600℃和1080℃的两种烧结温度条件下Zr含量和磁性能之间的关系的图。 实施本发明的最佳模式\n\n  本发明人发现R2，T14中的B含量为0.98质量％以下，B类稀土类烧结磁铁的含量为0.3质量％以下。 已经发现，通过添加Zr，可以在不产生硼化物相的情况下抑制异常晶粒生长，并且完成了本发明。\n\n  【0035】R2T14本发明的实施方式的B类稀土类烧结磁铁的稀土元素R（R）在27质量％〜32质量％的范围内。 至少一种选自N d，P r，T b和D y的稀土元素，其必须包含N d或P r中的至少一种，和6 \n\nT（F e或F e和C o的混合物）在0质量％以上且73质量％以下的范围内，B在0.85质量％以上且0.98质量％以下的范围内。 并且，Zr为添加元素M（A和选自由Cu，Ga，In和S n组成的组中的至少一种）的大于等于0质量％且小于等于0.3质量％且小于等于2.0质量％。 作为稀土元素的R选自N d，P r，D y和T b的至少之一。 但是，R总是包含N d或P r。 优选地，使用由N d_D y，N d_T b，N d_P r_D y或N d_P r_T b表示的稀土元素的组合。 在稀土元素中，D y和T b在改善矫顽力方面特别有效。 此外，R不必一定是纯元素，并且可以包含在工业上可得到的范围内在制造中不可避免的杂质。 如果该含量小于27质量％，则不能获得高磁性能，特别是高矫顽力，并且如果该含量大于32质量％，则剩余磁通密度降低，因此将该含量设定为27质量％以上且32质量％以下。\n\n  【0036】T总是含有F e，其一部分，优选50％以下，可以用C o代替。 此外，可以包含除Fe和Co以外的少量过渡金属元素。  Co对改善温度特性和改善耐腐蚀性有效，并且通常以10质量％以下的Co和余量的Fe的组合使用。 如果含量小于60质量％，则残留磁通密度降低，而如果超过73质量％，则矫顽力降低，因此，含量为60质量％以上且73质量％以下。\n\n  【0037】Zr是本发明的必要元素。 如下面将通过显示实验示例所解释的，Zr具有独特的作用。  Z r是主相的稀土铑\n\n 通过代替固溶体形成固溶体并降低晶体生长速率，可以抑制异常晶粒生长。 即，如JP-A-61-2955355和JP-A-2000-2-75771中所述，硼化物用于抑制异常晶粒生长。 与必要的常规知识相反，本发明人首次发现可在不沉积硼化物的情况下抑制异常晶粒生长。  Zr的添加消除了对硼化物相的需要，硼化物相导致残余磁通密度的降低，常规的成分允许在温度和Z或发生异常晶粒生长的时间进行烧结。 因此，可以在保持精细结构的同时提高烧结密度。 根据本发明的一个实施例，具有四方R2，T14，B型晶体结构的主相占据磁体体积的90％以上，并且富B（Q积分相）。  ：例如，RL F e4B4\n\n  【0038】在此，“基本上没有”是指用EPMA对10个以上的随机选择部位观察到磁铁结构，并且观察到90％以上。 在上述中，这意味着没有Q累积结构，另外，“没有Q累积相”是指使用EPMA（例如，Shimadzu Corporation制造的EPMA（EPM 1610））。 硼（B）在以下条件下的荧光X射线图像：加速电压：15 kV，光束直径：1 m，电流值：30 n A（远视功率）；光谱晶体：LSA 200。 当观察到B-Kα）时，在100 / mX 100 m的视场中亮点集中的部分（即归因于积分相的部分）的总面积为总视场的5％。 据说小于％的情况。\n\n 但是，如果Zr的含量超过0.3质量％，则残留磁通密度降低，因此该含量为0.3质量％以下。 另外，由于当存在过量的B时形成硼化物相，因此将B含量设定为0.98质量％以下以抑制硼化物相的形成。 您可以将B的一部分替换为C。 如果将B或B和C的混合物表示为Q，则可以通过基于原子数将B的一部分替换为B的C转换为C来计算Q的含量（质量％）。  .. 附加元素M是Al，Cu，Ga，In和Sn中的至少一种元素。 添加量优选为2.0质量％以下。\n\n  【0039】是因为，如果其含量超过2.0质量％，则剩余磁通密度降低。 在添加元素中，Ga可以表现出独特的效果。 如后面将通过实验示例说明的那样，当B（Q）的含量变低时，软磁R2，Ti7形成化合物，矫顽力和剩磁通密度变低。 有事情要做。 如果在这样的组成范围内添加非常少量的G a，则软磁相的产生受到抑制，并且在宽的B含量范围内，可以获得具有高矫顽力和高剩余磁通密度的稀土烧结磁体。 当B为0.98质量％以下时，本发明对于抑制Zr硼化物的形成特别有效。\n\n  【0040】当B（Q）的含量为0.95质量％以下且B（Q）的含量为0.90时，添加G a的效果显着。 含量超过质量％时是显着的。 如果Ga含量小于0.01质量％，则可能无法获得上述效果，并且难以通过分析进行管理。 另一方面，如果Ga含量超过0.08质量％，则残留磁通密度B r降低，因此不优选。\n\n 在本发明中，可以允许除上述元素以外的不可避免的杂质。 例如，从F e的原料混合的M n和C r，从F e-B（费洛邦）混合的A 1和S i以及在制造过程中不可避免地混合的H，N和O。\n\n  【0041】在烧结磁铁中，氧：0.5质量％以下，氮：0，\n\n  【0042】2质量％以下，氢：0.01质量％以下是优选的。 通过以此方式限制氧，氮和氢浓度的上限，可以增加主相比并且可以增加剩余磁通密度B r。\n\n  【0043】根据本发明的实施方式的R-T-B系烧结磁铁可以通过公知的方法制造。 例如，可以通过以下方法制造。\n\n  【0044】首先，通过例如高频熔融法制备具有预定组成的母合金的熔体，并将其冷却并固化以制备合金（母合金）。 调整母合金的组成使得稀土烧结磁体具有上述组成，可以通过已知的一般方法来制造合金（母合金）。 在各种合金生产方法中，优选使用淬火方法，例如带钢铸造法。 根据带状铸造法，即使采用离心铸造法代替带状铸造法等淬火法，也能够得到例如0.1mm〜5mm ＜厚度的合金锡片。 好。 此外，代替熔融/合金化步骤，可以通过使用直接还原扩散法来生产合金。 当使用通过淬火方法以外的方法获得的固体合金作为中间合金时，可以获得相同的效果。但是，与诸如带钢铸造方法的淬火方法相比，很可能发生偏斜， 硼化锆等可能会在合金结构中沉淀。\n\n  【0045】0\n\n 因此，难以有效地添加Zr。 另外，一旦析出Zr硼化物等，则难以通过热处理除去，在烧结后残留。 因此，与使用淬火合金的情况相比，由这种凝固合金制成的烧结磁体倾向于具有较低的主相体积比，结果，可以减小剩余磁通密度B r。 通过已知方法将获得的合金粉碎成平均粒径为1〜10m。 这样的合金粉末可以通过进行粗粉碎工序和细粉碎工序两种粉碎而适当地制造。 粗粉碎可以通过储氢粉碎法或使用盘磨机等的机械粉碎法来进行。 此外，细粉壳可以通过机械研磨法例如喷射式粉碎法或极磨法获得。\n\n  【0046】通过使用已知的成型技术将通过上述粉碎获得的细粉大豆粉成型为各种形状的成型体。 成型通常在磁场中使用压缩成型法进行，但也可以通过在脉冲取向后进行静液压成型的方法或在橡胶模具中成型的方法来进行。\n\n  【0047】为了提高成型过程中的送粉效率，均匀的成型密度和成型过程中的脱模性，请使用液体润滑剂（例如脂肪酸酯）或固体润滑剂（例如硬脂酸锌）。 可以将其添加到细粉之前的粉末和Z中或细粉之后的粉末中。 相对于100重量份的合金粉末，添加量优选为0.01至5重量份。\n\n  【0048】可以通过公知的方法烧结成型体。 烧结温度优选为100至1800℃，并且烧结时间优选为1至6小时。通过添加Zr，在比以前更高的温度下烧结本发明实施方案的合金。 因此，可以考虑温度变化等。\n\n 然后，难以将其用于批量生产，例如，可以采用1100℃以上的烧结温度。 烧结后的烧结体根据需要进行热处理（时效处理）。 热处理条件优选为例如400℃至600℃的温度和1至8小时的时间。\n\n  【0049】在下文中，将参考实验例更详细地描述本发明。\n\n  【0050】（实验例1）\n\n  【0051】通过以下步骤制造具有表1所示的各个组成的磁体（样品1至6）。表1所示的组成是所获得的烧结磁体的分析值。 它与合金的成分不同。 使用Shimadzu ICP和Horiba Gas分析仪通过已知方法进行组成分析。\n\n  【0052】尽管在表1中将F e示为余额，但该余额包含F e和少量不可避免的杂质。 以下表3也相同。 \n\n【0053】该实验例的样品中的B的含量与所有样品中的-R量和T量的化学计量量几乎相同。 在不考虑添加元素M的情况下计算各相的体积比时，主相（N d2Fe14B复合相）：94.4％，富R相：  2.5％，富B相：0.1％，R氧化物相（N d2〇3）：3.0％。\n\n  【0054】制备具有预定组成的中间合金的熔体，并且通过使用带材铸造法制备具有约0.2至0.4mm的厚度的合金带材。 将获得的合金海绵在氢气气氛中以0.2MPa的绝对压力保持在室温下。\n\n  【0055】保持2小时以使合金吸收氢。\n\n  【0056】将吸氢合金在约600℃的真空中保持3小时，然后冷却至室温。\n\n 所获得的合金由于氢脆而崩解，但是通过筛分使其崩解，从而获得粒径为425m以下的粗粉。 在氮气气氛中被粉碎。 通过FSSSS测量，对于所有样品，所获得的粉末的平均粒度在3.2μm以上且3.5μm以下的范围内。\n\n  【0057】通过将所得粉末压制成型而获得成型体。 在此，在施加约1T的垂直磁场（特斯拉）的同时，在196MPa的压力下进行成型。\n\n  【0058】通过在各种温度条件下将获得的成型体烧结约2小时而获得烧结体。\n\n  【0059】将得到的烧结体在Ar气氛中在550℃下进行2小时的时效处理，将其用作烧结磁铁的样品，并评价其磁特性。 在惰性气体中于0°C进行热退磁后，进行金相观察和化学分析。\n\n  【0060】3\n\n [表格1 ]\n\n  【0061】（质量％）\n\n  【0062】图1显示了每个样品的退磁曲线。 此处使用的样品的烧结条件为1 120°C和2小时。\n\n  【0063】从图1清楚可见，不包含附加元素M的样品1的矩形度非常差。 这是因为，如下所述，在样品1中，作为烧结温度，1120℃过高，从而发生异常晶粒生长。 添加了Ti，V，Nb和Mo作为添加元素M的样品2、3、5和6比样品1具有更好的矩形度，但是添加了Zr的样品 没有达到4。 样品4的退磁曲线的矩形度非常好。 从该结果可以看出，Z r发挥独特的作用。\n\n 接下来，将参考图6描述烧结温度与样品1和样品4的磁特性之间的关系。 图2是从顶部起依次以横轴为烧结温度，纵轴为矩形比（H k / H c J），矫顽力He J和残留磁通密度B r的曲线图。 在那儿。 这里用作矩形指数H k的矩形比（H kZH c J）表示当磁化强度变为剩余磁通密度B r的90％时的外部磁场值。 从图2所示的曲线图中，添加了Zr的样品4（图中的△）的烧结温度范围的上限约为20°，与没有添加元素的样品1相比，磁特性更好。 您可以看到C在上升。 结果，即使烧结温度为1120℃（1 3 9 3 K），矩形比也为0.9以上，并且具有非常好的矩形。\n\n  【0064】接下来，参照表2，将描述烧结温度，矩形度和异常晶粒生长之间的关系。 在表2中，“粒径”栏中的○表示无异常晶粒生长，×表示无异常晶粒生长。 从表2可以看出，不包含其他元素的样品1在1100℃下已经显示出异常的晶粒生长，并且具有较低的矩形比（H k / H c J）。 在添加了Zr的样品4中，即使在110℃也未观察到异常晶粒长大，且矩形比为0.9以上的高值。 另外，从样品2、3、5和6的结果可以看出，其他添加元素（Ti，V，Nb和M o）也具有抑制异常晶粒长大直至11 O的作用。  ，可以保持较高的矩形比，但效果不如Z r，从1 120°C的结果可以明显看出。\n\n [表2]\n\n  【0066】粒度：○表示无异常晶粒生长，X表示无异常晶粒生长。接下来，用偏光显微镜观察在不同温度下烧结的样品1和样品4的金相组织的结果如图3所示。 图8显示。 图3至5显示了在1 080°C下烧结的样品1（：1 1 0 0°C和1 1 2 0°C，图6至8显示了在10 8°C下烧结的样品4）。 显示了在0°C和110°C和1120°C烧结时的观察结果。\n\n  【0067】从图3可以看出，在样品1中，在1080处没有观察到异常的晶粒生长，并且形成了由细晶粒组成的良好的金相组织。 另一方面，当烧结温度为110℃时，如图4所示，观察到已经由异常晶粒生长形成的巨大结构。 在图5中，烧结温度为1120℃，观察到更多的宏观结构。\n\n  另一方面，在含有Zr的样品4中，如图6至图8所示，抑制了异常晶粒的生长，并且图8所示的烧结温度为1120℃。 即使实际上没有大型组织。\n\n 接下来，图9至图13分别示出了样品2至6的烧结磁体（烧结温度1040℃）的通过EP MA的反向散射电子图像（BEI：在每个图中的左上），以及组成。 显示了图像（N d（图右上），B（图左下）和添加元素M（图右下））。 由于每个样品中的B含量低至0.95质量％，因此未观察到B的累积相（偏析），表明未形成硼化物。 另外，未观察到添加量为0.1质量％的添加元素M（Ti，V，Nb和Mo）的累积相。 注意，对于T i观察到一些偏析，其具有相对较小的原子量。\n\n  【0069】从上述结果可以看出，如果B的含量少且添加元素M的含量非常少，则硼化物不会析出。 与传统的硼化物是抑制晶粒生长所必需的常识相反，已经发现可以抑制异常晶粒的生长而无需沉积硼化物。\n\n  【0070】为了比较，图14示出R（N d：20.3质量％，Pr：6.0质量％，Dy：5.0质量％）：3 1  .3质量％，C o：0.90质量％，A 1：0.20质量％，C u：0.10质量％，Zr：0.07质量％，B：0。  9 9质量％，其余：Fe和使用EPMA观察具有不可避免的杂质组成的烧结磁体的结果。 从图14可以看出，在该具有高B含量的烧结磁体中形成了Zr积分相和B积分相。\n\n  【0071】因此，根据本发明，通过将Zr添加到B含量少的组合物中，可以不产生硼化物相而抑制异常晶粒生长。 因此，抑制了矫顽力的降低，并且\n\n 通过抑制主相的体积比的减少，可以得到残留磁通密度提高的RT-B烧结磁铁。\n\n  【0072】（实验示例2）\n\n  【0073】以与实验例1相同的方式制造具有表3所示的组成的磁铁。 但是，在此，为了减少烧结磁铁中所含的氧量，将微粉碎工序中的气氛气体中的氧浓度控制为50ppm以下。 表4示出了评价通过在各种烧结温度下烧结如此获得的样品7至20而获得的磁体的结果。 表4所示的各项目的评价与实验例1相同。\n\n  【0074】8\n\n 6吨\n\n  【0076】[ε财富]\n\n  【0077】£LU0 / 00Zdr / 13d 08SST0 / S00Z OAV\n\n [表4]\n\n  【0079】有无积分相：◯为无积分相，X为积分相，*与B积分相混合粒径：◯为无异常晶粒长大，X为异常晶粒长大 如上所述，不管是否存在B积分相或Zr累积相，都会发生异常晶粒生长。 还发现，不管是否存在Zr累积相，Zr的添加都抑制了异常晶粒的生长。\n\n 在120°C下烧结时，所有样品的烧结密度为7.46至7.49 Mgm-3，真实密度约为7.5。 与5 M gm-3相比，烧结略有不足。 另一方面，当烧结温度为1040℃至1080时，烧结密度为7.54至7.57M gm-3 已达到 因此，当烧结温度为120℃时，烧结不充分并且残留磁通密度低，这是一个问题。\n\n  【0080】因此，为了在确保没有残留磁通密度的降低的问题的烧结密度的同时，抑制晶粒的异常生长和矩形比的降低，确认了不含Zr的样品7。 对于1，优选的烧结温度将仅为140℃的一种条件。 样品7的矩形比为0.9以上，但由于H k和H c J的值较小，因此不优选。 另一方面，在添加了Zr的样品12〜20中，即使在1080℃的烧结温度下也抑制了异常晶粒的生长和矩形比的降低。 温度范围已从1440°C扩展到1080°C的高温范围。 因此，与样品7至11相比，样品12至20可在工业上且更稳定地制造。 \n\n【0081】接下来，将参考图10描述B含量与磁特性之间的关系。 图15是示出相对于B含量调节样品7至20的磁性能的结果的图。水平轴是B含量，垂直轴是上侧的剩磁通密度B r，下侧的下侧。 矫顽力H e J.\n\n  【0082】从图15可以看出，不含Zr的样品7〜11的剩余磁通密度的峰值在0.96质量％的B含量附近。 这是因为，如果B含量超过0.96质量％左右，则无助于磁性。\n\n  【0083】2\n\n 这是因为富相（然后N dXFe4B4复合相）增加。 由于矫顽力不受富B相的影响，因此即使B含量超过0.96质量％也不会降低。\n\n  另一方面，如果B含量小于0.96质量％，则无法形成富B相，而析出N d2，Fe i7相。  N d2Fe17相是软磁相（主相是硬磁相），因此N d2Fei7 而且，由于N d2，Fe17相的析出，矫顽力急剧降低，主相的体积分率降低，剩余磁通密度也降低。\n\n  【0085】含Zr的样品12至16具有比样品7至11高的矫顽力值，但当B含量小于约0.96质量％时，残余磁通量 如样品7-11，密度降低。 另外，当B含量超过0.96质量％时，特别是当B含量超过0.98质量％时，剩磁通密度降低，不含有Zr的样品7〜11。 但是，减少量很大。 这是由于在含有Z r。Z r B2，Z r-N d_B或Z r_F e_B的样品中存在过量的B。 这是因为 换句话说，Zr的添加通过抑制异常晶粒的生长而间接改善了磁性能，但是没有直接改善磁性能的效果。 可以看出，在超过组成范围时，剩余磁通密度显着降低。\n\n  【0086】除了添加Zr以外，在添加了极少量的Ga（0.04质量％）的样品17〜20中，得到B含量小于0.96质量％的组成。 解决了该范围内的剩余磁通密度的降低和矫顽力的降低，并且剩余磁通密度达到最大值的B含量比的范围大大扩展到低含量侧。\n\n 可以获得具有宽的烧结温度范围和优异的磁性能的烧结磁体。 当B含量为0.95质量％以下时，通过在添加Z r的基础上进一步添加G a而获得的效果显着。\n\n  【0087】在图15中示出B含量为0.90质量％以上，但是，如果B含量为0.85质量％以上，则可以期待Zr的添加效果。 并且认识到添加G的效果。 当然，如图所示，B含量优选为0.90质量％以上且0.98质量％以下。\n\n  【0088】（实验例3）\n\n  【0089】N d：22.0质量％，Pr：6.2质量％，Dy：2.0质量％，C o：1.8质量％  ，C u：0.10质量％，B：0.94质量％，G a 0.05质量％，Zr：X（0〜4）质量％，余量：Fe和不可避免的杂质组成 在各种烧结温度下制备具有以上所述的烧结磁体，并评估磁性能。 实验例3中制造的烧结磁铁的氧含量为0.38〜0.41质量％的范围。\n\n  【0090】图16是示出在1600℃和1080℃的烧结温度这两个条件下Zr含量和磁性能之间的关系的图。 横轴是Zr含量，纵轴从上到下分别是Hk（磁化强度为剩磁通密度Br的90％时的外部磁场的值），矫顽力HeJ和剩磁通密度。 兄弟\n\n  【0091】如从图16可见，即使Zr含量小至0.01质量％，也可获得在高烧结温度下提高矫顽力H c J的效果。 被认可。 另一方面，当Zr含量超过0.3质量％时，剩余磁化显着降低，因此将Zr含量调整为0.3质量％以下。\n\n 可以看出，最好进行调整。 工业可用性\n\n  【0092】根据本发明，可以获得抑制矫顽力的降低并且具有改善的剩余磁通密度的RT-B-B系烧结磁体。 由于本发明的稀土烧结磁体具有宽的烧结温度裕度，因此可以工业上稳定地制造。 根据本发明的稀土烧结磁体特别适用于各种电机，致动器以及对高性能的强烈需求的其他应用。');
INSERT INTO `os_patent_instruction_text` VALUES (13036, 22865, '【技術分野】\n\n【0001】\n\n本発明は、加圧焼結時に原料粉末を充填する粉末加圧焼結用缶に関するものである。\n\n【背景技術】\n\n【0002】\n\n加圧焼結により原料粉末を焼結する際には、一般に、原料粉末を加圧用缶に充填した後、加圧焼結用缶内に残存するガス成分を加圧焼結用缶に設けた脱気用孔から真空引きして脱気する方法がとられている。この時、十分な脱気を行うためには、脱気用孔の径を一定以上にする必要があるが、一般にこの孔は原料粉末よりも径が大きいので真空引きする際に、原料粉末が加圧用缶の外部に吸い出されてしまう。そこで、一般的には、脱気用孔と原料粉末との間に、原料粉末の平均粒径よりも網目の細かい金属網が設置される。\n\n【0003】\n\n例えば、加圧焼結用缶を真空引きする際に加圧焼結用缶内の原料粉末が外部へ吸い出されることを防止することを一つの目的として、加圧焼結用缶に充填された原料粉末と脱気用管を有する加圧焼結用缶の蓋体との間に、セラミックボールおよびその蓋体側に金網からなる中間層を介在させることが提案されている(例えば、特許文献1参照)。\n\n【特許文献1】特開平6-145714号公報\n\n【発明の開示】\n\n【発明が解決しようとする課題】\n\n【0004】\n\n上述した特許文献1では、加圧焼結用缶内の原料粉末と脱気用管を有する蓋体との間に、原料粉末の平均粒径よりも小さい網目の金網を設置しているため、真空引きの際に、原料粉末が加圧焼結用缶の外部に吸出されるのをある程度防止できるが、金網の網目よりも細かい原料粉末が網を通過して脱気用管内に堆積したり、原料粉末が金網の網目に挟まって目詰まり起こすといった問題がある。また、金網の目詰まりは、加圧焼結用缶内に残存するガス成分の十分な脱気を阻害するとともに、ガス成分が十分に脱気できないまま加圧焼結すると、焼結体の加工を行ったときに割れ等の欠陥の発生するという問題がある。\n\n本発明の目的は、上記の課題を解決し、粉末加圧焼結用缶を封止する際に、加圧焼結用缶内に残存するガス成分を極力低減するとともに真空引きによる脱気時に原料粉末の吸出しを極力低減することで、加圧焼結後の焼結体を加工する際の割れ等の発生を抑制できる焼結体を作製するための粉末加圧焼結用缶を提供することである。\n\n【課題を解決するための手段】\n\n【0005】\n\n本発明者は、例えば金属等の原料粉末を加圧焼結用缶に充填した後の、真空引きによる加圧焼結用缶内の残存ガスの脱気において、十分な脱気レベルを確保しつつ原料粉末の外部への吸出しを抑制する方法を検討した結果、脱気用孔の開孔方向に対して直角方向からの脱気経路を確保することで、金属網の目詰まりを抑制し、ガス成分の脱気量の確保と原料粉末の外部への吸出しを抑制できることを見いだし本発明に到達した。\n\n【0006】\n\nすなわち、本発明は、脱気用管が配置されてなる粉末加圧焼結用缶において、該脱気用管の脱気用孔を蓋うように板状の金属網が配置されるとともに、該金属網に対し前記脱気用孔と反対側に配置された金属箔によって脱気用孔に対して垂直方向の脱気流路を遮断し、かつ前記金属網と前記金属箔の間に脱気用孔の開孔方向に対して直角方向からの脱気流路が形成されている粉末加圧焼結用缶である。\n\n好ましくは、前記脱気用孔の開孔方向に対して直角方向からの脱気流路は、前記金属網に対し前記脱気用孔と反対側に配置されたスペーサ部材と該スペーサ部材を覆う金属箔とによって形成される間隙である粉末加圧焼結用缶である。\n\n【0007】\n\nまた、好ましくは、前記脱気用孔の開孔方向に対して直角方向からの脱気流路は、前記金属網に対し前記脱気用孔と反対側に配置された折目線を有した金属箔の該折目線の谷に\n\nよって形成される間隙である粉末加圧焼結用缶である。\n\nまた、好ましくは、前記脱気用孔の開孔方向に対して直角方向からの脱気流路は、前記金属網に対し前記脱気用孔と反対側に配置されたスペーサ部材と該スペーサ部材を覆う金属箔とによって形成される間隙を併用する粉末加圧焼結用缶である。\n\n【発明の効果】\n\n【0008】\n\n本発明によれば、粉末加圧焼結用缶の真空引きの際に、ガス成分を十分に脱気することができるとともに、原料粉末の吸出しを抑制することが可能となるので、加圧焼結後の焼結体の局部的な割れや変形を防止でき、しかも不純物ガス量の低減を飛躍的に改善することができるため、加圧焼結の実用化にとって欠くことのできない技術となる。\n\n【発明を実施するための最良の形態】\n\n【0009】\n\n本発明の重要な特徴は、粉末加圧焼結用缶内に残存するガス成分の十分な低減と原料粉末の外部への吸出しを抑制するために、脱気用管が配置されてなる粉末加圧焼結用缶において、脱気用管の脱気用孔を蓋うように板状の金属網を配置し、さらに、脱気用孔の開孔方向に対して直角方向からの脱気経路を確保する構成を採用した点にある。\n\n【0010】\n\n本発明者は、図1に示すように脱気用管2の脱気用孔3を蓋うように板状の金属網4のみを配置した粉末加圧焼結用缶1を使用して、原料粉末6を充填後に粉末加圧焼結用缶の内部に残存するガス成分を真空引きによって脱気を行った。すると、原料粉末よりも網目の細かい金属網を脱気用孔を蓋うように配置するのみでは、金属網が目詰まりを起こして十分な脱気が行えないという問題が発生した。\n\nそこで、金属網の目詰まりを生じさせない方法を種々検討した結果、脱気用孔に対して垂直方向に脱気流路が確保されると、強い吸引力で金属網に原料粉末が吸引されるため網目が詰まりやすくなることを知見し、脱気用孔に対して直角方向からの脱気流路を確保する構成とすることに到達した。以下に本発明の構成を詳細に説明する。\n\n【0011】\n\n本発明の粉末加圧焼結用缶の一例を示す模式図である図2に基づいて以下説明する。図2に示すように、本発明の粉末加圧焼結用缶1は、脱気用管2の脱気用孔3を蓋うように、金属網4が配置されるとともに、脱気用孔の開孔方向に対して直角方向からの脱気流路が形成されている。\n\n粉末加圧焼結用缶を上記の構成とすることで、脱気用孔から真空引きによる脱気を行う際には、脱気流路が脱気用孔の開孔方向対して直角方向からの脱気流路が形成されるため、粉末加圧焼結用缶に残存するガス成分は、この流路を経由して脱気用孔から外部へ吸出される。この際、原料粉末6もガス成分とともに脱気用孔から吸出される可能性があるが、迂回して脱気用管の入口部に到達するため、脱気用管の入口部に堆積することも、粉末加圧焼結用缶の外へ吸出されることも抑制される。\n\n【0012】\n\nまた、本発明の粉末加圧焼結用缶においては、脱気用孔の開孔方向に対して直角方向からの脱気流路の形成に関して、好適には以下の態様がある。\n\n(1)金属網に対し脱気用孔と反対側に配置されたスペーサ部材とこのスペーサ部材を覆う金属箔とによって形成される脱気用孔対応部から開孔方向に対して直角方向に延長された間隙であるもの。\n\n(2)金属網に対し脱気用孔と反対側に配置された折目線を有した金属箔のこの折目線の谷によって形成される脱気用孔対応部から開孔方向に対して直角方向に延長された間隙であるもの。\n\n(3)金属網に対し脱気用孔と反対側に配置されたスペーサ部材と、このスペーサ部材を覆う折目線を有した金属箔のこの折目線の谷とによって形成される脱気用孔対応部から開孔方向に対して直角方向に延長された間隙を併用するものがある。\n\n【0013】\n\n上記の態様(1)は、粉末加圧焼結用缶の一例を示す模式図である図2に示すように、脱気用孔3と反対側に、スペーサ部材7とこのスペーサ部材を蓋う金属箔5によって形成される脱気用孔対応部を有するものである。この脱気用孔対応部から脱気用孔の開孔方向に対して直角方向に延長される間隙が形成されているため、粉末加圧焼結用缶に残存するガス成分は、この間隙で形成される流路を経由して脱気用孔から外部へ吸出される。そして、金属箔により原料粉末が直接に金属網で蓋われた脱気用孔へ向かうことを遮断できるため、金属網の目詰まりが大幅に抑制できる。\n\n【0014】\n\nなお、スペーサ部材は、例えば、金属網と金属箔との間に間隙を形成できるものであればよく、例えば、ステンレス製やMo系製等の一般に市販される金属箔で0.2mm程度以上の厚みを有するものを用いることができる。また、間隙を形成しやすくするために、スペーサ部材は、例えば、図5に示すように脱気用孔に接するように配置するのが望ましい。\n\nまた、金属箔は真空引きによる脱気の際に原料粉末が直接に金属網に吸引されるのを遮断できればよく、例えば、ステンレス製やMo系製等の金属箔が使用できる。\n\n【0015】\n\n上記の態様(2)は、粉末加圧焼結用缶の一例を示す模式図である図3に示すように、脱気用孔3と反対側に、折目線を有した金属箔5のこの折目線の谷によって形成される脱気用孔対応部を有するものである。この脱気用孔対応部から開孔方向に対して直角方向に延長された間隙が形成されているため、この構造においても、粉末加圧焼結用缶に残存するガス成分は、この間隙で形成される流路を経由して脱気用孔から外部へ吸出される。そして、金属箔により原料粉末が直接に金属網で蓋われた脱気用孔へ向かうことをこの構成においても遮断できるため、金属網の目詰まりが大幅に抑制できる。\n\nなお、金属箔の折目線の形成は、金属網との間に間隙を形成できればよく、例えば、金属箔の一例を示す斜視図である図6に示すように、金属箔の中央部を通過する折目線8によって谷9を形成するもの(a)、金属箔の中央部から放射状の折目線8によって谷9を形成するもの(b)等が使用できる。\n\n【0016】\n\n上記の態様(3)は、粉末加圧焼結用缶の一例を示す模式図である図4に示すように、脱気用孔3と反対側に、スペーサ部材7と、このスペーサ部材を覆う折目線を有した金属箔5のこの折目線の谷とを併用することによって形成される脱気用孔対応部を有するものである。このスペーサ部材と折目線を有した金属箔の併用によって、より確実に脱気用孔対応部から開孔方向に対して直角方向に延長された間隙が形成され、粉末加圧焼結用缶に残存するガス成分は、この間隙で形成される流路を経由してより確実に脱気用孔から外部へ吸出されるため、この態様がより好ましい。\n\n【0017】\n\nまた、上述の態様とは別の態様として、脱気用孔の開孔方向に対して直角方向からの脱気流路は、加圧用缶の脱気用孔から開孔方向に対して直角方向に延長された溝を粉末加圧焼結用缶自体に形成してもよい。その好ましい一例を図7に示す。\n\n【0018】\n\nまた、本発明においては、金属網、スペーサ部材および金属箔は、粉末加圧焼結用缶に溶接一体化されていることが望ましい。それは、金属網、スペーサ部材および金属箔が加圧焼結用缶に溶接一体化されていると、脱気用孔から位置ずれを発生させることなく容易に配置できるためである。また、一般に粉末加圧焼結用缶はいずれか1面を開口部として、その開口部から所望量の原料粉末を充填した後、その開口部を蓋体で閉口し、脱気用管から脱気をして封止する。この際、脱気用管は、一般に加圧焼結用缶の蓋体に配置されているため、この蓋体に脱気用孔を蓋うように溶接一体化されていることが望ましい。\n\nなお、粉末加圧焼結用缶への溶接は、粉末加圧焼結用缶と、金属網、スペーサ部材および金属箔が一体化されていればよく、スポット溶接等の簡易な溶接が利用できる。\n\n【0019】\n\nまた、粉末加圧焼結用缶の金属網を配置した蓋体を、充填した原料粉末に直接に圧力をかけて押付けるような構造の粉末加圧焼結用缶においては、特に金属網の目詰まりが発生しやすいので、脱気用孔の開孔方向に対して直角方向からの脱気流路が形成されることが、より好ましい。\n\n【実施例1】\n\n【0020】\n\n本発明の実施例について、図8を参照して以下に説明する。\n\n図8の(1)に示す内径寸法300×405×80(mm)の粉末加圧焼結用缶1に平均粒径120μmのCrの原料粉末を充填した。\n\nCr原料粉末を充填後、図8の(2)に示すように、粉末加圧焼結用缶の蓋体11に配置される脱気用管2の脱気用孔3が蓋われるように、30×40×0.2t(mm)のステンレス製の網目が200メッシュ(74μm)の金属網4、ステンレス製の10×60×0.2t(mm)のスペーサ部材7、50×60×0.05t(mm)のステンレス製の金属箔5を順に、かつスペーサ部材が金属箔で完全に蓋われないように蓋体にスポット溶接により一体化して、脱気用孔の開孔方向に対して直角方向からの脱気流路を形成する脱気用孔対応部13とした。この脱気用孔対応部を有する粉末加圧焼結用缶を本発明例1とした。\n\n【0021】\n\n上記の脱気用孔対応部に代えて、ステンレス製の網目が200メッシュ(74μm)の金属網、中央部から放射状の折目線によって谷を形成したステンレス製の金属箔を順に、脱気用孔が蓋われるように粉末加圧焼結用缶の蓋体にスポット溶接により一体化して脱気用孔対応部とした粉末加圧焼結用缶を本発明例2として準備した。\n\nまた、脱気用孔が蓋われるように、ステンレス製の網目が200メッシュ(74μm)の金属網、ステンレス製のスペーサ部材、中央部から放射状の折目線によって谷を形成したステンレス製の金属箔を順に、かつスペーサ部材が金属箔で完全に蓋われないように蓋体にスポット溶接により一体化して脱気用孔対応部とした粉末加圧焼結用缶を本発明例3として準備した。\n\n【0022】\n\nその後、図8の(3)に示すように、本発明例1〜3の粉末加圧焼結用缶の開口部を蓋体で密閉溶接した後、粉末加圧焼結用缶を450℃に加熱しながら真空ポンプにより1×10-3Paまで減圧脱気した。脱気完了後、それぞれを、図8の(4)に示すように脱気用管を封止して、1200℃、120MPaの条件で熱間静水圧プレスにより2時間保持して焼結処理を行った。\n\n【0023】\n\n焼結処理後に粉末加圧焼結用缶をつけたまま、それぞれ1100℃で熱間圧延を施したところ、割れが発生することなく良好な600×740×6のCr焼結体を得ることができた。また、この焼結体のそれぞれから5mm角の試験片を採取し、熱伝導度法によってガス成分の分析を行ったところ、窒素値は10〜50ppmであった。\n\n【0024】\n\nまた、比較例として、同様に粉末加圧焼結用缶に平均粒径120μmのCrの原料粉末を充填し、Cr原料粉末の上にステンレス製の網目が200メッシュ(74μm)の金属網のみを配置して、蓋体で粉末加圧焼結用缶を密閉の上、溶接した。その後、上記と同様に、粉末加圧焼結用缶を450℃に過熱しながら真空ポンプにより真空引きによる減圧脱気した。1×10-3Paを目標に減圧脱気したところ、真空ポンプの真空度メータの真空値の挙動が不規則に変動し、目標値へ安定的に減圧脱気をするのが困難であった。減圧脱気を終了した後に、脱気用管を封止して、1200℃、120MPaの条件で熱間静水圧プレスにより2時間保持して焼結処理を行った。焼結処理終了後に、粉末加圧焼結用缶をつけたまま、1100℃で熱間圧延を行ったが、圧延中に素材の端部に割れが生じたために、圧延を中止した。\n\n【0025】\n\n割れ発生部から試験片を採取して、熱伝導度法によりガス成分の分析を行ったところ、窒素値は120〜180ppmと実施例のCr焼結体に比べ大幅に窒素値が高いことが分かった。\n\n【図面の簡単な説明】\n\n【0026】\n\n【図1】従来の粉末加圧焼結用缶の一例を示す模式図である。\n\n【図2】本発明の粉末加圧焼結用缶の一例を示す模式図である。\n\n【図3】本発明の粉末加圧焼結用缶の一例を示す模式図である。\n\n【図4】本発明の粉末加圧焼結用缶の一例を示す模式図である。\n\n【図5】本発明のスペーサ部材の配置の一例を示す模式図である。\n\n【図6】本発明の折目線を有する金属箔の一例を示す斜視図である。\n\n【図7】本発明の粉末加圧焼結用缶に形成する溝の一例を示す模式図である。\n\n【図8】本発明の粉末加圧焼結用缶への粉末充填から封止までの手順を示す図である。\n\n【符号の説明】\n\n【0027】\n\n1.粉末加圧焼結用缶、2.脱気用管、3.脱気用孔、4.金属網、5.金属箔、\n\n6.原料粉末、7.スペーサ部材、8.折目線、9.折目線の谷、10.直角方向からの脱気流路、11.蓋体、12.封止部、13.脱気用孔対応部、14.溝', '【技术领域】\n\n【0001】\n\n本发明涉及一种粉末加压烧结,可以在加压烧结时填充原料粉末。\n\n发明背景\n\n【0002】\n\n当通过加压烧结烧结原料粉末时,通常,在将原料粉末填充到压力中之后,可以在可以使用蜡烛中留在候选中的气体组分。通过疏散来脱气脱气方法从脱气孔。此时,为了进行足够的脱气,必须使脱气孔的直径大于恒定,但通常,原料粉末真空真空,因为直径大于原料粉末。它被吸出了压力可以。因此,通常,网格的精细金属网络安装在脱气孔和原料粉末之间,网格更细的金属网络大于原料粉末的平均粒径。\n\n【0003】\n\n例如,它充满了用于加压烧结的罐作为一种目的,以防止原料粉末在吸尘时吸收到外部时被吸入外部,以便加压烧结。它已经提出干预由金属丝网组成的中间层在原料粉末和压力烧结之间的盖子侧可以具有脱气管(例如,专利制品)参见1)。\n\n[专利文献1]日本专利申请公开号6-145714\n\n发明的描述\n\n本发明要解决的问题\n\n【0004】\n\n在上述专利文献1中,由于在原料粉末和具有脱气管的盖子之间安装了小于原材料粉末的平均粒径的网的网啮合,因此安装了原料粉末。当时真空,可以防止原料粉末在压力烧结的外部吸入,但是比线网网络通过网络和沉积在脱气管中的更精细的原料粉末。有问题原料粉末用金属丝网网堵塞。另外,金属丝网的堵塞被抑制剩余的气体成分在压力烧结的候选中的充分脱气,并且当气体组分充分脱气时,处理烧结体的加工。存在缺陷的问题表演时裂缝。\n\n本发明的一个目的是解决上述问题,当密封用于粉末加压烧结的粉末时,通过减少吸尘器,减少含有可爱的气体组分的气体组分,通过减少吸尘器脱气时原材料粉末尽可能多,可以提供粉末压制烧结罐,以产生烧结体,该烧结体可以在加压烧结后加工烧结体时抑制裂缝等的产生。它是。\n\n[解决问题的手段]\n\n【0005】\n\n本发明的发明人通过例如用原料粉末如金属去除用于压力烧结的残留气体来确保足够的脱气水平。由于检查抑制原料粉末抽吸的方法的结果,通过相对于脱气孔的开口方向从垂直方向固定脱气路径来抑制金属网络的堵塞。发现可以抑制气体组分的脱气量并抑制吸力原料粉末到原料外部,并达到本发明。\n\n【0006】\n\n也就是说,在粉末压力烧结的罐中,脱气管设置在该粉末压力烧结中,放置板状金属网络以覆盖脱气管的脱气孔,设置在与脱气孔相对的金属箔被设置在与金属网络相对的金属箔,金属网被阻挡,并且在金属网和金属箔之间。它是粉末加压烧结烧结烧结烧结烧结烧结烧结通道相对于脱气孔的开口方向形成脱气通道。\n\n优选地,来自垂直方向相对于拆卸孔的开口方向的脱气通道是与拆卸孔的相对设置的间隔构件,以及相对于金属网络覆盖间隔构件的金属。它由箔形成尽管它是粉末加压烧结的罐,其是间隙。\n\n【0007】\n\n还优选地,来自垂直方向相对于拆卸孔的开口方向的脱气通道是具有与固定孔与金属网络相对的折叠线的金属箔。在山谷中\n\n因此,它是形成的尽管它是粉末加压烧结的罐,其是间隙。\n\n还优选地,从垂直方向上抵靠拆卸孔的开口方向的脱气流动路径牙齿它由设置在与金属网络的拆卸孔相对的间隔构件形成,并且覆盖间隔构件的金属箔。尽管它是粉末加压烧结的罐,其结合了间隙。\n\n【发明效果】\n\n【0008】\n\n根据本发明,当粉末加压烧结的糖类可以充分脱气时,气体组分可以充分脱气,并且可以抑制原料粉末的抽吸,因此加压烘烤。因此,局部开裂和变形可以防止烧结体,并且可以显着提高杂质气体量的减少,因此它成为一种技术,不能缺乏用于加压烧结的实际应用。\n\n实施本发明的最佳方式\n\n【0009】\n\n本发明的一个重要特征是减少用于脱气管的粉末,以减少粉末压力烧结中残留在粉末压力烧结中的气体成分以及原料的吸入物到原料粉末外部的气体成分。在压力 -成形可以,放置板状金属网以覆盖脱气管的脱气孔,进一步地,从脱气孔的开口方向上的脱气通路处于配置的情况下采取保护。\n\n【0010】\n\n本发明人使用罐1用于粉末压力烧结,仅放置板状金属网络4,以便覆盖脱气管2的脱气孔3,如图2所示。填充原料粉末6,气体残留在粉末压力烧结的粉末内部通过真空拉伸脱气。然后,只有金属网络被堵塞并且充分脱气,其中啮合的细金属网是比原料粉末的盖子。\n\n因此,当检查不引起金属网络堵塞的各种方法的结果,当脱气通道在垂直于脱气孔的方向上固定时,原料粉末被吸入具有强力的金属网络。发现网格变得容易堵塞并达到配置以相对于脱气孔固定从垂直方向上的脱气流动路径。下面将详细描述本发明的配置。\n\n【0011】\n\n本发明的用于粉末压力烧结的粉末的实例是示出拐杖的示例的示意图,将基于图4描述甘蔗的示例。如图1所示。如图2所示,根据本发明的粉末压力烧结罐1由金属网络4放置,使得脱气管2的脱气孔3是盖子,并且脱气孔与垂直方向脱气通道形成在孔径方向上。\n\n通过使粉末用上述构造进行粉末加压烧结,当通过从脱气孔的真空吸附脱气时,脱气通道从垂直方向上到脱气孔的孔方向。由于形成脱气通道,因此气体部件剩余的粉末压力烧结的罐通过该流动路径从脱气孔吸入外部。此时,尽管原材料粉末6也可以与气体组分一起从脱气孔吸入,但是可以在脱气管的入口处沉积,因为它可以绕过并到达脱气管的入口。而且,还抑制了粉末加压烧结罐的吸收。\n\n【0012】\n\n此外,在本发明的用于粉末加压烧结的罐中,从垂直方向相对于脱气孔的开口方向形成脱气通道的形成具有以下几个方面。\n\n(1)与脱气孔的相对设置的间隔构件和覆盖间隔构件的金属箔从由覆盖间隔构件的金属箔形成的脱气孔兼容部分垂直于开口方向延伸。什么是间隙\n\n(2)对应于开口孔的孔的方向与布置在金属箔的金属箔的谷孔,布置在与脱气孔相对的金属网络上,从脱气孔到孔方向到开口方向是间隙延伸的间隙到。\n\n(3)脱气孔与与金属网络相对设置的间隔构件兼容,与覆盖间隔构件的金属箔的谷。一些间隙在从部件到开口方向的垂直方向上使用。\n\n【0013】\n\n如图2所示,如图2所示。如图2所示,图2是示出用于粉末加压烧结的罐的示例的示意图,(1),如图2所示。如图2所示,间隔构件7和间隔构件是盖在脱气孔3的另一侧。它具有由金属箔5形成的脱气孔兼容部分。由于在垂直方向上延伸的间隙由脱气孔支撑部分形成,因此形成沿垂直于开口方向的方向延伸的间隙,因此剩余的气体部件在粉末加压烧结中处于该间隙中。它是通过形成的流动路径从脱气孔从脱气孔吸入。然后,由于原料粉末直接,原料粉末可以直接封闭到可阻挡金属网络的脱气孔中,从而可以显着抑制金属网络的堵塞。\n\n【0014】\n\n间隔构件可以例如使用,只要它可以在金属网和金属箔之间形成间隙,例如,在金属箔中的厚度为约0.2mm或更大,这通常用于不锈钢或mo系统。您可以使用什么。而且,为了便于间隙,所以将间隔构件理想地布置成与脱气孔接触,如图2所示。\n\n另外,金属箔可以通过原材料粉末被直接向金属网络中的,在脱气时由于真空排出而脱气,例如,可以使用金属箔,例如不锈钢和MO系统。\n\n【0015】\n\n如图1所示。如图3所示,如图3所示。如图3所示,图3是示出用于粉末加压烧结烧结的示例的示意图,上述(2),具有折叠线5的金属箔5位于相对的一侧对于脱气孔3,它具有由折叠线的谷的脱气孔兼容部分。由于在从脱气孔对应部分垂直于开口方向的方向上延伸的间隙,即使在该结构中,仍然存在于用于粉末加压烧结的罐中的气体部件是该间隙。它从脱气孔到外部的脱气孔吸入形成的流动路径。然后,可以在这种结构中阻止金属箔,使得原料粉末直接朝向脱气孔,其中原料粉末直接用金属网直接覆盖,从而可以显着抑制金属网络的堵塞。\n\n另外,金属箔的形成可以用与金属网络的间隙形成,例如,如图2所示。如图6所示,这是示出金属箔的示例的透视图,它通过中心部分金属箔的箔。(a)通过折叠8(a)形成谷9,可以使用从金属箔(b)等的中心部分形成谷9。\n\n【0016】\n\n如图4所示,如图4所示。如图4所示,图4是示出用于粉末加压烧结烧结,(3),间隔构件7和覆盖间隔构件的粉末的粉末的示例的示意图,如图4所示。4,它具有通过使用具有折叠线的金属箔5的折叠线的谷谷而形成的脱气孔兼容部分。间隔构件和具有折叠线的金属箔的组合从开口方向上的孔与膨胀孔兼容部分更可靠地延伸到垂直方向,以及用于粉末加压烧结的罐。这个方面更优选,因为通过在该间隙中形成的流动路径,从脱气孔中更可靠地从脱气孔中更可靠地从脱气孔中汲取剩余的气体组分。\n\n【0017】\n\n此外,作为比上述方面的另一方面,来自垂直方向相对于脱气孔的开口方向的脱气通道垂直于来自压力的脱气孔的孔可以到打开方向。延伸的凹槽可以在本身可以形成粉末加压烧结。一个优选的例子如图2所示。\n\n【0018】\n\n此外,在本发明中,希望金属网络,间隔构件和金属箔焊接到粉末加压烧结的候选中。即,因为金属网络,间隔构件和金属箔在剥离剂中焊接,其可以容易地布置,而不会从脱气孔产生误解。通常,在用于粉末加压烧结的粉末可以用作开口之后,开口填充有从开口的所需量的原料粉末,然后用盖子封闭开口,并从中取出去激活管脱气管。小心并密封。此时,由于脱气管通常设置在加压烧结的盖子上,所以希望盖子焊接以覆盖脱气孔。\n\n此外,焊接到粉末加压烧结的能力可以与罐,金属网络,间隔构件和金属箔集成,并且可以使用诸如点焊的简单焊接。。\n\n【0019】\n\n另外,在用于将粉末的粉末加压烧结的罐中,在将粉末加压烧结罐的金属网络直接放置的结构中,用直接施加到填充的原料粉末的压力,尤其是金属网,因为可能发生堵塞,更优选的是,相对于脱气孔的开口方向形成垂直方向的脱气流动路径。\n\n例1\n\n【0020】\n\n下面将参考图4描述本发明的实施例。\n\n填充平均粒径为120μm的Cr的原料粉末在罐1中填充用于图2中所示的内径尺寸300×405×80(mm)的粉末压力烧结。8(1)。\n\n在填充CR原料粉末之后,如图2的(2)所示。如图8所示,设置在粉末加压烧结筒的盖11上的脱气管2的脱气孔3可以相位,30×40×0.2t(mm)不锈钢网(74μm)金属网4,10×60×0.2t(mm)不锈钢10 x 60 x 0.2t(mm)间隔构件7,50×60×0.05t(盖子集成通过点焊点焊接到盖子,使得间隔构件没有完全覆盖金属箔,并且间隔构件没有完全覆盖金属箔,并且从垂直方向上覆盖到脱气孔的开口方向。该使用用于形成脱气通道的脱气孔兼容部分13。粉末加压烧结可以具有该脱气孔相容部分是本发明的第一实施例。\n\n【0021】\n\n代替上述脱气孔对应部分,金属网络的不锈钢网(74μm)为200目(74μm),由来自中心部分的径向线形成谷的不锈钢金属箔,以及不锈钢金属箔是有序的。制备用于粉末加压烧结的粉末,作为脱气孔的实施例2,其与点焊到粉末压力烧结罐的盖子以便被覆盖。\n\n此外,不锈钢网(74μm)的金属网络为200目(74μm),不锈钢间隔构件,由径向线从中央部分形成的不锈钢金属箔,使不锈钢网被覆盖。通过点焊,盖子与点焊到盖子,使得间隔构件未完全覆盖金属箔,以及作为脱气空穴对应部分的粉末加压烧结部分的粉末作为实施例3本发明。\n\n【0022】\n\n此后,如图2的(3)所示。如图8所示,在用盖子密封本发明1至3的用于粉末加压烧结的插入罐的开口之后,用于粉末加压烧结的罐是450℃1×10加热时真空泵-3对Pa脱气。脱气后,如图2(4)所示,脱气管被密封。\n\n【0023】\n\n当在烧结处理之后进行粉末加压粉末时,热轧轧制在1100℃下进行,每一个都具有良好的600×740×6 Cr烧结体,而不会破裂。它是否。此外,当从每个烧结体中收集5mm正方形的试验片时,进行通过导热率的气体组分的分析,氮值为10至50ppm。\n\n【0024】\n\n另外,作为比较例,在罐内填充平均粒径为120μm的Cr的原料粉末,用于粉末加压烧结,并且仅是200目(74μm)的不锈钢网(在CR原料粉末上方使用74μm。用盖子填充并用粉末焊接,用于粉末加压烧结。此后,如上所述,通过用真空泵真空,可以通过真空泵减压减小粉末加压烧结的罐,同时在450℃下过热。 1×10-3当PA对目标脱气时,真空泵真空仪的真空值的行为不规则地波动,并且难以在稳定的压力下稳定地脱气至靶值。在完成减压脱气后,通过热静压压制在1200℃和120MPa下通过热静压压制将脱气管密封并保持,以进行烧结处理。完成烧结过程后,在1100℃下进行热轧,同时保持粉末加压烧结,但是轧制成停止,因为在轧制期间在材料的末端发生开裂。\n\n【0025】\n\n当从裂缝产生部分收集试验片时,通过导热法分析气体成分,显然氮气值明显高于120-180ppm和实施例的Cr烧结体。稻田。\n\n[简要描述;简介]\n\n【0026】\n\n【图1】图3是表示常规罐用于粉末加压烧结的示例的示意图。\n\n【图2】图3是表示本发明的粉末加压烧结烧结的粉末的实例的示意图。\n\n图3.图3是表示本发明的粉末加压烧结烧结的粉末的实例的示意图。\n\n图4.图3是表示本发明的粉末加压烧结烧结的粉末的实例的示意图。\n\n图5.图3是表示本发明的间隔构件的布置的示例的示意图。\n\n6.图3是表示具有本发明虚线的金属箔的示例的立体图。\n\n图7.图3是表示在罐中形成的用于本发明的粉末加压的凹槽的实例的示意图。\n\n图8图3是表示将本发明的粉末加压烧结粉末填充粉末的粉末粉末的图。\n\n[标志的说明]\n\n【0027】\n\n1.烧结原因,烧结,2.脱气管,3.脱气孔,4.金属网络,5.金属箔,\n\n6.原料粉,7.间隔构件,8.折叠线,9.折叠谷,10.从直角的脱气通道,11.盖子,12.密封,13.脱毛孔兼容部门,14.glock');
INSERT INTO `os_patent_instruction_text` VALUES (13037, 22866, '【技術分野】\n\n【0001】\n\n本発明は、  残留磁束密度Br 1.29T以上、保磁力Hcj 2.4MA/m以上、最大エネルギー積(BH)max 320kJ/m3以上の高磁気特性を有する、モータ用に最適な希土類焼結磁石及びその製造方法に関する。\n\n【背景技術】\n\n【0002】\n\n今日、高性能永久磁石として代表的なR-Fe-B系永久磁石(特許文献1などに開示)は、優れた磁気特性を有するため、各種モータ、アクチュエータなどの様々な用途に使用されている。また、これらの用途に応じて種々の磁石特性を発揮するように、様々な組成を有するR-Fe-B系永久磁石が提案されている。\n\n【0003】\n\nしかしながら、電気·電子機器の小型·軽量化および高機能化の要求は強く、それらを構成するR-Fe-B系永久磁石にもより一層の高性能化が要求されている。\n\n【0004】\n\n従来、高性能R-Fe-B系永久磁石として、R(希土類元素)にDy、Tb、Gd、Ho、Er、Tm、Ybなどの重希土類元素を添加することにより、高磁気特性、特に保磁力Hcjの向上を図ることが知られている(特許文献2)。\n\n【特許文献1】特開昭59-46008号公報\n\n【特許文献2】特公平5-10807号公報\n\n【発明の開示】\n\n【発明が解決しようとする課題】\n\n【0005】\n\n特許文献2に開示されている磁石をはじめとして、R-Fe-B系永久磁石の高性能化を図るため、種々組成の材質が提案されているが、モータ用に最適な残留磁束密度Br 1.29T以上、保磁力Hcj 2.4MA/m以上、最大エネルギー積(BH)max 320kJ/m3以上の磁気特性を有するR-Fe-B系永久磁石は未だに提供されていない。\n\n【0006】\n\n本発明は、上記事情に鑑みてなされたものであり、その主たる目的は、モータ用に最適なBr 1.29T以上、Hcj 2.4MA/m以上、(BH)max 320kJ/m3以上の高磁気特性を有する希土類焼結磁石及びその製造方法の提供することにある。\n\n【課題を解決するための手段】\n\n【0007】\n\n発明者らは、鋭意研究の結果、以下の構成を採用することにより、上記目的を達成することができることを見出した。\n\n【0008】\n\n本発明の希土類焼結磁石は、R(Rは、Tb以外の希土類元素の少なくとも1種とTbとを含む)28.5質量%〜32.0質量%、B0.91質量%〜1.15質量%、酸素0.35質量%以下、残部FeまたはFeとCo及び不可避的不純物からなり、Tbの含有量は3.2質量%〜5.2質量%であり、残留磁束密度Br 1.29T以上、保磁力Hcj 2.4MA/m以上、最大エネルギー積(BH)max 320kJ/m3以上である。\n\n【0009】\n\n好ましい実施形態において、Siは0.05質量%以下、Mnは0.08質量%以下である。\n\n【0010】\n\n好ましい実施形態において、Laは0.45質量%以下、Ceは0.4質量%以下、Smは0.05質量%以下、Yは0.1質量%以下である。\n\n【0011】\n\n好ましい実施形態において、Ca、Mg、Tiはそれぞれ0.02質量%以下である。\n\n【0012】\n\n好ましい実施形態において、Rは30.5質量%〜31.5質量%である。\n\n【0013】\n\n好ましい実施形態において、Tbは4.5質量%〜5.0質量%である。\n\n【0014】\n\n好ましい実施形態において、Bは0.94質量%〜1.06質量%である。\n\n【0015】\n\n好ましい実施形態において、酸素は0.25質量%以下である。\n\n【0016】\n\n好ましい実施形態において、炭素は0.10質量%以下である。\n\n【0017】\n\n好ましい実施形態において、RはTb4.5質量%〜5.0質量%、残部Nd及びTb、Nd以外の希土類元素の不可避的不純物からなる。\n\n【0018】\n\n本発明の希土類焼結磁石の製造方法は、原料金属または合金を溶解、鋳造し合金鋳片を得る工程、合金鋳片を粉砕し、粗粉砕粉を得る工程、粗粉砕粉を酸素量200ppm以下の不活性ガス雰囲気中でジェットミル粉砕することにより微粉砕粉を得る工程、微粉砕粉を磁場中成形後、焼結及び熱処理する工程により、R(RはTbとTb以外の希土類元素のうち少なくとも一種)28.5質量%〜32.0質量%、Tb3.2質量%〜5.2質量%、B0.91質量%〜1.15質量%、酸素0.35質量%以下、残部FeまたはF\n\neとCo及び不可避的不純物からなり、Br 1.29T以上、Hcj 2.4MA/m以上、(BH)max 320kJ/m3以上、の希土類焼結磁石を得る。\n\n【0019】\n\n好ましい実施形態において、微粉砕粉の平均粒径は2.0μm〜2.5μmである。\n\n【0020】\n\n好ましい実施形態において、磁界中成形における磁界は2.0T以上のパルス磁界である。\n\n【0021】\n\n好ましい実施形態において、微粉砕粉末をモールド内に充填、密閉し、磁界配向の後、冷間静水圧成形を行う。\n\n【0022】\n\n好ましい実施形態において、磁界配向は2.0T以上のパルス磁界中で行う。\n\n【発明の効果】\n\n【0023】\n\n本発明によれば、残留磁束密度Br 1.29T以上、保磁力Hcj 2.4MA/m以上、最大エネルギー積(BH)max 320kJ/m3以上の高磁気特性を有し、モータ用として最適な希土類焼結磁石を提供することができる。\n\n【0024】\n\nまた、本発明によれば、上記希土類焼結磁石を効率よく製造することができる希土類焼結磁石の製造方法を提供することができる。\n\n【発明を実施するための最良の形態】\n\n【0025】\n\n以下、本発明による希土類焼結磁石における組成限定理由を説明する。\n\n【0026】\n\nRは、Tb以外の希土類元素のうち少なくとも一種とTbとを含有する。すなわち、Rは、Tbを必須とするが、他の希土類元素の種類は任意である。Tbの含有量は磁石全体の3.5質量%〜5.5質量%である。Tbを含めたRの含有量は、磁石全体の28.5質量%〜32.0質量%である。Rの含有量が28.5質量%未満になると、焼結を十分に進行させることが難しく、高い保磁力Hcj(以下、「保磁力Hcj」を「Hcj」と略記する)を得にくくなり、また、Rの含有量が32.0質量%を超えるとも、残留磁束密度Br(以下、「残留磁束密度Br」を「Br」と略記する)が低下する。Rの含有量の好ましく範囲は30.5質量%〜31.5質量%である。Rの含有量をこの範囲に限定することにより、残留磁束密度Brまたは保磁力Hcjをさらに向上させることができる。\n\n【0027】\n\nなお、Tb以外の希土類元素のうちの少なくとも一種としては、NdまたはNdとPrを含むことが好ましい。Prは常温での保磁力向上には効果があるものの、高温での保磁力の低下が大きいため、多量の含有は不適である。しかし、Prは通常、ジジム合金(Nd-Pr合金)に含有され、ジジム合金は高純度のNdメタルよりも比較的安価である。高温での保磁力を考慮すれば、RをTbとNdのみにすれば理想的であるが、高価な高純度Ndを用いなければならなくなる。従って、希土類焼結磁石を安価にして提供するためには、適量のPrの含有は許容できる。\n\n【0028】\n\nまた、Tb以外の希土類元素のうち少なくとも一種として、Dyを含有させることも可能である。Dyは添加量を増加させるほど希土類焼結磁石の保磁力を向上させることができるが、保磁力向上と反比例して残留磁束密度が低下することが知られている。本発明においては、目的とするモータ用に最適なBr 1.29T以上、Hcj 2.4MA/m以上、(BH)max 320kJ/m3以上の高磁気特性を確保することを前提に、Tbと置換することが望ましい。以下、「最大エネルギー積(BH)max」を「(BH)max」と略記する。\n\n【0029】\n\nTbの含有量を3.2質量%〜5.2質量%に限定する理由は、Tbの含有量が3.2質量%未満になると、高い保磁力が得られず、5.2質量%を超えると、残留磁束密度が低下するためである。Tbの含有量の好ましい範囲は、4.5質量%〜5.0質量%であり、この範囲に限定することにより、BrまたはHcjを向上させることができる。Rとして、Tb4.5質量%〜5.0質量%、残部Nd及びTb、Nd以外の希土類元素の不可避的不純物を含み、不純物が上記含有量の範囲を満足することにより、さらに高い磁気特性を得ることができる。\n\n【0030】\n\n上記のTb、NdなどのRは純元素でなくてもよく、工業上入手可能な範囲で、製造上不可避な不純物を含有するもので差し支えない。しかし、本発明の如く、Br 1.29T以上、Hcj 2.4MA/m以上、(BH)max 320kJ/m3以上の高磁気特性を有する、モータ用に最適な希土類焼結磁石においては、微量な希土類元素の不純物が磁気特性の劣化を招く恐れがある。従って、Laを0.45質量%以下、Ceを0.4質量%以下、Smを0.05質量%以下、Yを0.1質量%以下に制御すべく、Rの純度を選定することが好ましい。\n\n【0031】\n\nBの含有量は、0.91%未満では高保磁力が得られず、1.15質量%を超えると残留磁束密度が低下するため、0.91%質量%〜1.15質量%に限定する。より好ましくは、0.94質量%〜1.06質量%であり、BrまたはHcjを向上させることができる。\n\n【0032】\n\n酸素の含有量は、0.35質量を超えると保磁力及び残留磁束密度が低下するため0.35質量以下に限定する。より好ましくは、0.25質量%以下であり、BrまたはHcjを向上させることができる。\n\n【0033】\n\n上記、Pr、R、Bの残部はFeまたはFeとCoによって構成される。CoはFeの50%以下まで置換することができる。また、FeやCo以外の少量の遷移金属元素を含有することができる。Coは温度特性の向上、耐食性の向上に有効であるが、過度の添加は保磁力を低下させることになるため、10質量%以下のCo、残部Feの組み合わせで用いることが好ましく、特に0.85質量%〜0.95質量%のCo、残部Feの組み合わせが好ましい。\n\n【0034】\n\n上記必須元素に加え、M元素として、Al、V、Ni、Cu、Zn、Zr、Nb、Mo、In、Ga、Sn、Hf、Ta、Wのうち少なくとも一種を添加することにより、保磁力の向上を図ることができる。添加量は2.0質量%以下が好ましい。2.0質量%を超えると残留磁束密度が低下するためである。上記添加元素の中でも、特に、本発明による希土類焼結磁石においては、Al0.15質量%〜0.25質量%、Cu0.05質量%〜0.15質量%を含有させることにより、さらに磁気特性を向上させることができる。Al、Cuは、鉄やフェロボロンから不純物として混入量をそのまま含有させてもよいし、別途添加することによって、上記含有量に制御することが望ましい。\n\n【0035】\n\n鉄やフェロボロンから不純物として混入するSi、Mnは、含有量が増すに従い磁気特性を低下させるので、Siは0.05質量%以下、Mnは0.08質量%以下に制御すべく、原料の純度を選定することが望ましい。Si、Mnと同様にCa、Mg、Tiなども、本発明の高磁気特性が特徴である希土類焼結磁石においては、磁気特性を低下させる原因となる。従って、不純物中のCa、Mg、Tiはそれぞれ0.02質量%となるように、原料の純度を選定することが望ましい。\n\n【0036】\n\nさらに、炭素も磁気特性を低下させる原因の一つであり、希土類焼結磁石中の炭素量は\n\n0.10質量%以下に制御することが望ましい。炭素は、原料からの混入に加え、製造工程中にも混入されるので、極力、炭素を混入しない製造工程、例えば、後述するジェットミル粉砕などは好適である。\n\n【0037】\n\n上記組成を満足することにより、Br 1.29T以上、Hcj 2.4MA/m以上、(BH)max 320kJ/m3以上の高磁気特性を有する、モータ用に最適な希土類焼結磁石を得ることができる。本発明による希土類焼結磁石は、その組成に特徴があるため、製造方法は特に限定するものはないが、以下に詳述する製造方法を適用することにより、効率よく、本発明による希土類焼結磁石を得ることが可能になる。\n\n【0038】\n\nまず、第一の工程として、原料金属または合金を溶解、鋳造し、合金鋳片を得る。溶解、鋳造は、公知の手段を採用することができ、特に、ストリップキャスティング法は好ましい手段である。\n\n【0039】\n\n次の工程として、合金鋳片を粉砕し、粗粉砕粉を得る。粗粉砕についても、公知の手段を採用することができる。\n\n【0040】\n\n次に、粗粉砕粉を酸素量200ppm以下の不活性ガス雰囲気中でジェットミル粉砕することにより微粉砕粉を得る。酸素量が200ppmを超えると、得られる微粉砕粉の酸素量が増加し、焼結後の焼結磁石の酸素量が0.35質量%を超えることとなり好ましくない。不活性ガスとしては、窒素、アルゴンなどを使用することができる。また、ジェットミルについては、公知の装置を使用することができる。\n\n【0041】\n\n微粉砕粉の平均粒度は、2.0μm〜2.7μmであることが好ましい。2.0未満では微粉砕粉の酸素濃度が増加し、2.7μmを超えると保磁力が低下するため好ましくない。\n\n【0042】\n\n微粉砕後の各工程は、公知の磁界中成形方法、焼結方法及び熱処理方法を採用することができ、特に、以下に示す方法を採用することが好ましい。\n\n【0043】\n\n磁場中成形は、磁界強度が2.0T以上のパルス磁界を用いて行なうことが好ましい。これにより、希土類焼結磁石のBrを向上させることができる。\n\n【0044】\n\n成形工程は、微粉砕粉末をモールド内に充填、密閉し、磁界配向を行なった後、冷間静水圧成形によって行ってもよい。これにより、希土類焼結磁石の残留磁束密度がより一層向上する。上記磁界配向を2.0T以上のパルス磁界中で行うことにより、さらに残留磁束密度が向上する。\n\n【実施例】\n\n【0045】\n\n実施例1(Tb量限定の実施例)\n\n質量百分率で組成がNd24.5-xTbxPr6.0B1.0Co0.9残部Fe(不可避的不純物を含み得る)で示され、Tbの組成比率xを3.0、3.2、3.8、4.5、5.0、5.2、5.5と変化させた合金を溶解した後、合金溶湯をストリップキャスティング法によって急冷し、合金鋳片を得た。この合金鋳片を水素粉砕、脱水素処理によって粗粉砕した。その後、この粗粉砕粉に対し、酸素量100ppmの窒素雰囲気中においてジェットミル粉砕を行い、平均粒径2.3μmの微粉砕粉を得た。\n\n【0046】\n\n次に、得られた微粉砕粉を金型中に充填し、磁界強度0.8Tの静磁界中で配向した後、成形した。得られた成形体を1333Kで2時間焼結した後、823Kで1時間熱処理し、焼結磁石を得た。各焼結磁石の酸素量は0.25質量%、炭素量は0.08質量%で\n\nあった。また、各焼結磁石の不純物を分析したところ、Si0.05質量%以下、Mn0.08質量%以下、La0.45質量%以下、Ce0.4質量%以下、Sm0.05質量%以下、Y0.1質量%以下、Ca0.02質量%以下、Mg0.02質量%以下、Ti0.02質量%以下であった。さらに、この焼結磁石にはAl0.20質量%、Cu0.10質量%が含有されていた。\n\n【0047】\n\n得られた焼結磁石の磁気特性を表1に示す。表1において、番号の横に*印を付したものは比較例であり、xが3.0及び5.5の場合である。表1の通り、Tb量が3.2質量%未満ではHcjが低下して2.4MA/m以上を満足することができず、5.2質量%を超えるとBrが低下して1.29T以上を満足することができず、その結果、(BH)max320kJ/m3以上を満足することができない。従って、Tb量は3.2質量%〜5.2質量%に限定した。また、表1から明らかなように、4.5質量%から5.0質量%で最も良い磁気特性が得られていることが分かる。\n\n【0048】\n\n【表1】\n\n\n\n【0049】\n\n実施例2(R量限定の実施例)\n\n質量百分率で組成がNdyTb4.5Pr6.0B1.0Co0.9残部Fe(不可避的不純物を含み得る)で示され、Ndの組成比率yを17.0、18.0、19.0、20.0、21.0、22.0と変化させ、かつ、R量(Nd量+Tb量+Dy量)を27.5、28.5、29.5、30.5、31.5、32.5と変化させた合金を用いる以外は、実施例1と同様の方法で焼結磁石を得た。各焼結磁石の酸素量は0.25質量%であった。炭素、Al、Cu及び各不純物の量は実施例1の焼結磁石と同様であった。\n\n【0050】\n\n得られた焼結磁石の磁気特性を表2に示す。表2において、番号の横に*印を付したものは比較例であり、yが17.0でR量が27.5の場合、及びyが22.0でR量が32.5の場合である。表2の通り、R量が28.5質量%未満では焼結ができず、32.0質量%を超えるとBrが低下して1.29T以上を満足することができず、その結果、(BH)max320kJ/m3以上を満足することができない。従って、R量は28.5質量%〜32.0質量%に限定した。また、表2から明らかなように、30.5質量%から31.5質量%で最も良い磁気特性が得られていることが分かる。\n\n【0051】\n\n【表2】\n\n\n\n【0052】\n\n実施例3(B量限定の実施例)\n\n質量百分率で組成がNd20.0Tb4.5Pr6.0BzCo0.9残部Fe(不可避的不純物を含み得る)で示され、Bの組成比率zを0.89、0.94、1.00、1.06、1.16と変化させた合金を用いる以外は、実施例1と同様の方法で焼結磁石を得た。各焼結磁石の酸素量は0.25質量%であった。炭素、Al、Cu及び各不純物の量は実施例1の焼結磁石と同様であった。\n\n【0053】\n\n得られた焼結磁石の磁気特性を表3に示す。表3において、番号の横に*印を付したものは比較例であり、zが0.89及び1.16の場合である。表3の通り、B量が0.91質量%未満ではHcjが低下して2.4MA/m以上を満足することができず、1.15質量%を超えるとBrが低下して1.29T以上を満足することがない。従って、B量は0.91質量%〜1.15質量%に限定した。また、表3から明らかなように、0.94質量%から1.06質量%で最も良い磁気特性が得られていることが分かる。\n\n【0054】\n\n【表3】\n\n\n\n【0055】\n\n実施例4(酸素量限定の実施例)\n\n質量百分率で組成がNd20.0Tb4.5Pr6.0B1.0Co0.9残部Fe(不可避的不純物を含み得る)で示される合金を溶解した後、合金溶湯をストリップキャスティング法によって急冷し、合金鋳片を得た。この合金鋳片を水素粉砕、脱水素処理によって粗粉砕し、粗粉砕粉を酸素量100ppm、200ppm、1000ppm、3000ppmの窒素雰囲気中でそれぞれジェットミル粉砕して平均粒径2.3μmの微粉砕粉を得た。得られた微粉砕粉を実施例1と同様の方法により成形、焼結、熱処理し、焼結磁石を得た。\n\n【0056】\n\n得られた焼結磁石の酸素量及び磁気特性を表4に示す。表4において、番号の横に*印\n\nを付したものは比較例であり、酸素量が0.40質量%及び0.55質量%の場合である。表4の通り、酸素量が0.35質量%を超えると、Br、Hcj、(BH)maxの全てが低下し、特に保磁力Hcjの低下が著しい。さらに、酸素量が増えると、焼結できなくなる。従って、酸素量は0.35質量%以下に限定した。また、表4から明らかなように、酸素量が0.25質量でより高い特性が得られていることが分かる。\n\n【0057】\n\nまた、表4から、ジェットミル粉砕時の導入酸素量を増加させると、焼結磁石の含有酸素量が増加していることが分かる。そして、焼結体の酸素量を0.35質量%以下に抑えるためには、ジェットミル粉砕時の導入酸素量を200ppm以下にする必要がある。従って、ジェットミル粉砕時の導入酸素量は200ppm以下と限定した。\n\n【0058】\n\n【表4】\n\n\n\n【0059】\n\n実施例5(平均粒径限定の実施例)\n\n質量百分率で組成がNd20.0Tb4.5Pr6.0B1.0Co0.9残部Fe(不可避的不純物を含み得る)で示される合金を溶解した後、合金溶湯をストリップキャスティング法によって急冷し、合金鋳片を得た。この合金鋳片を水素粉砕、脱水素処理によって粗粉砕した。得られた粗粉砕粉をジェットミル粉砕するに際して、粗粉砕粉の投入量を変えて、窒素雰囲気中でそれぞれジェットミル粉砕し、表5に示す平均粒径の微粉砕粉を得た。この微粉砕粉を実施例1と同様の方法により成形、焼結、熱処理し、焼結磁石を得た。\n\n【0060】\n\n得られた焼結磁石の酸素量及び磁気特性を表5に示す。表5の通り、平均粒径を小さくするほど、焼結磁石の酸素量が増加することが分かる。平均粒径が1.8μmでは、酸素量が多くなり過ぎるため、焼結できなくなる。一方、平均粒径が大きくなれば酸素量は低減されるが、磁気特性、特に保磁力Hcjの劣化を招く。従って、微粉砕粉の平均粒径は2.0μm〜2.7μmが好ましい範囲である。但し、好ましい範囲は、ジェットミル粉砕時の導入酸素量にも影響されるため、ジェットミル粉砕の最適な条件を適宜選定することが望ましい。\n\n【0061】\n\n【表5】\n\n\n\n【0062】\n\n実施例6(金型+パルスの実施例)\n\n質量百分率で組成がNd20.0Tb4.5Pr6.0B1.0Co0.9残部Fe(不可避的不純物を含み得る)で示される合金を溶解した後、合金溶湯をストリップキャスティング法によって急冷し、合金鋳片を得た。この合金鋳片を水素粉砕、脱水素処理によって粗粉砕し、粗粉砕粉を酸素量100ppmの窒素雰囲気中でジェットミル粉砕して、平均粒径2.3μmの微粉砕粉を得た。\n\n【0063】\n\n次に、得られた微粉砕粉を金型中に充填し、磁界強度2.0Tまたは3.5Tのパルス磁界を印加して微粉砕粉を配向した後、成形した。得られた成形体を1333Kで2時間焼結した後、823Kで1時間熱処理し、焼結磁石を得た。各焼結磁石の酸素量は0.25質量%であった。\n\n【0064】\n\n得られた焼結磁石の磁気特性を表6に示す。なお、参考のため、微粉砕粉の配向を\n\n磁界強度0.8Tの静磁界中で行った例(試料No.31=実施例1試料No.4)を合わせて表6に示す。表6の通り、2.0T以上のパルス磁界中で微粉砕粉を配向したものは、磁界強度0.8Tの静磁界中で微粉砕粉を配向したものよりも、Br及び(BH)maxが大きく向上する。そして、パルス磁界を大きくすることにより、さらにBr及び(BH)maxが向上することが分かる。従って、Br及び(BH)maxを向上させるためには、磁界中成形における磁界を、磁界強度2.0T以上のパルス磁界で行うことが好ましい。\n\n【0065】\n\n【表6】\n\n\n\n【0066】\n\n実施例7(CIP+パルスの実施例)\n\n質量百分率で組成がNd20.0Tb4.5Pr6.0B1.0Co0.9残部Fe(不可避的不純物を含み得る)で示される合金を実施例1と同様の方法により、溶解、急冷、粉砕を行って、平均粒径2.3μmの微粉砕粉を得た。得られた微粉砕粉を、直径25mm、高さ25mmのゴムモールドに充填密度3.5g/cm3で充填し、ゴム製の蓋によってゴムモールドを密閉した。次に、このゴムモールドに、磁界強度が2.0Tまたは磁界強度が3.5Tのパルス磁界をそれぞれ印加し、配向した。\n\n【0067】\n\n次いで、配向後のゴムモールドを、冷間静水圧成形によって成形した後、ゴムモールドを除去して内部の成形体を取り出し、この成形体を1333Kで2時間焼結し、さらに823Kで1時間熱処理を施し、焼結磁石を作製した。各焼結磁石の酸素量は0.25質量%であった。\n\n【0068】\n\n得られた焼結磁石の磁気特性を表7に示す。なお、参考のため、ゴムモールドを用いず、金型中で磁界配向した後成形した例(試料No.34=実施例1試料No.4)の磁気特性をあわせて表7に示す。表7に示す通り、微粉砕粉をモールド内に充填、密閉し、パルス磁界による磁界配向の後、冷間静水圧成形を行ったものは、金型中で磁界配向、プレ\n\nスしたものよりも、保磁力Hcjが若干低下するが、Br及び(BH)maxが大きく向上する。そして、パルス磁界を大きくすることにより、さらにBr及び(BH)maxが向上することが分かる。従って、Br及び(BH)maxを向上させるためには、微粉砕粉をモールド内に充填、密閉し、パルス磁界による磁界配向の後、冷間静水圧成形を行うことが好ましく、また、パルス磁界強度は2.0T以上が好ましい。\n\n【0069】\n\n【表7】\n\n\n\n【産業上の利用可能性】\n\n【0070】\n\n本発明による希土類焼結磁石は、Br 1.29T以上、Hcj 2.4MA/m以上、(BH)max 320kJ/m3以上の高い磁気特性を有するため、モータ用磁石として最適である。', '【技术领域】\n\n【0001】\n\n本发明具有稠度磁通密度Br 1.29t或更高,矫顽力HCJ 2.4ma / m以上,最大能量产品(BH)最大320kJ / m3靶向稀土烧结磁铁及其制备方法,用于具有上述具有更高磁性的电动机的电动机。\n\n发明背景\n\n【0002】\n\n如今,作为高性能永磁体的代表性R-Fe-B永磁体(专利文献1等中公开)用于各种应用,例如各种电动机和致动器,因为它们具有优异的磁性。另外,已经提出了具有各种组合物的R-Fe-B永磁体,以根据这些应用施加各种磁体特性。\n\n【0003】\n\n然而,对电气和电子器件的小尺寸,减重和高官能化的需求强,R-Fe-B永磁体需要进一步的高性能。\n\n【0004】\n\n通常,作为高性能R-Fe-B永磁体,高磁性,特别是通过将诸如Dy,Tb,Gd,HO,ER,Tm和Yb的重稀土元素(例如稀土元素)添加(稀土元素)而保留。已知改善磁力HCJ(专利文献2)。\n\n[专利文献1]日本专利申请公开号59-46008\n\n日本专利文献2 5-10807\n\n发明的描述\n\n本发明要解决的问题\n\n【0005】\n\n尽管已经提出了各种组合物的材料,以便实现R-Fe-B永磁体的高性能,例如专利文献2中公开的磁体,但是已经提出了各种组合物的材料,T或更高,矫顽力HCJ 2.4ma / m以上,最大能量产品(BH)最大320kJ / m3尚未提供具有上述磁性的R-Fe-B永磁体。\n\n【0006】\n\n本发明是鉴于上述情况,其主要目的是最好的BR 1.29T或更多,HCJ 2.4ma / M,(BH)MAX 320KJ / M.3它是提供一种具有上述高磁特性和制造方法的稀土烧结磁体。\n\n[解决问题的手段]\n\n【0007】\n\n发明人发现,通过密集研究通过采用以下配置,可以实现上述目的。\n\n【0008】\n\n在本发明的稀土烧结磁体中,R(R包括除TB之外的至少一种类型的稀土元素)28.5质量%至32.0重量%,B0.91%至1.15重量%,0.35质量%氧气。此外,残留磁通密度Br 1.29t或更大,以及残留磁通密度的最大能量Br 1.29t或更大,以及残留磁通密度的最大能量Br 1.29t或更高最大能量HCJ 2.4mA / m以上,残余磁通密度Br 1.29T或更高,最大能量HCJ 2.4ma / m以上,剩余磁通密度Br 1.29t或更大,以及最大能量HCJ 2.4mA / m以上,残留磁通密度Br 1.29T或更高的含量,Tb的含量为3.2质量%至5.2质量%,Tb的含量为3.2质量%至5.2%质量。产品(BH)最大320KJ / m3这是上面的。\n\n【0009】\n\n在优选的实施方案中,Si为0.05质量%以下,Mn为0.08质量%以下。\n\n【0010】\n\n在优选的实施方案中,LA为0.45质量%以下,Ce为0.4质量%以下,SM为0.05质量%以下,Y为0.1质量%以下。\n\n【0011】\n\n在优选的实施方案中,Ca,Mg和Ti分别小于0.02质量%。\n\n【0012】\n\n在优选的实施方案中,R为30.5质量%至31.5质量%。\n\n【0013】\n\n在一个优选的实施方案中,Tb为4.5质量%至5.0重量%。\n\n【0014】\n\n在优选的实施方案中,B为0.94%至1.06重量%。\n\n【0015】\n\n在优选的实施方案中,氧气为0.25质量%以下。\n\n【0016】\n\n在优选的实施方案中,碳小于或等于0.10质量%。\n\n【0017】\n\n在一个优选的实施方案中,R由除Tb4.5%至5.0质量%,残留的Nd和Tb,Nd之外的稀土元素之外的稀土元素之外的不可避免的杂质组成。\n\n【0018】\n\n本发明的稀土烧结磁体的制造方法溶解了原料金属或合金,获得合金板坯的步骤,粉碎合金板,粗碎粉末,粗粉粉末超过200ppm或较少。R(R是Tb和Tb以外的稀土元素,通过在惰性气体气氛中通过喷射碾磨磨削和热处理后获得细碎的粉末和粉碎粉末。至少一种28.5质量% 32.0质量%,Tb 3.2质量%至5.2重量%,B0.91%至1.15重量%,氧0.35重量%或更低,剩余的Fe或f\n\nE,CO和不可避免的杂质,BR 1.29T或更多,HCJ 2.4ma / m以上,(BH)最大320KJ / m3以上,获得稀土烧结磁体。\n\n【0019】\n\n在优选的实施方案中,细碎粉末的平均粒径为2.0μm至2.5μm。\n\n【0020】\n\n在优选实施例中,磁场的形成中的磁场是2.0 t或更大的脉冲磁场。\n\n【0021】\n\n在优选实施例中,粉碎粉末填充在模具中,密封,并且在磁场取向后进行冷静压压力。\n\n【0022】\n\n在优选实施例中,磁场取向在2.0t或更高的脉冲磁场中执行。\n\n【发明效果】\n\n【0023】\n\n根据本发明,剩余磁通密度Br 1.29t或更高,矫顽力HCJ 2.4ma / m以上,最大能量产品(BH)最大320kJ / m3可以提供上述高磁特性,并且可以为电动机提供最佳稀土烧结磁体。\n\n【0024】\n\n此外,根据本发明,可以提供一种制造稀土烧结磁体的方法,其能够有效地制造稀土烧结磁体。\n\n实施本发明的最佳方式\n\n【0025】\n\n在下文中,将描述根据本发明的稀土烧结磁体中的组合物的原因。\n\n【0026】\n\nR包含除TB和TB之外的至少一种稀土元素。也就是说,尽管R是Tb的,但其他稀土元素的类型是任意的。 Tb的含量为整个磁体的3.5质量%至5.5%重量。包括Tb的R含量为整个磁体的28.5质量%至32.0%重量。当R的含量小于28.5质量%时,难以充分地烧结,并且高矫顽力HCJ(下文中,“矫顽力HCJ”被缩写为“HCJ”),即使r的内容也是如此低于32.0质量%,降低了残余磁通密度Br(下文中,“剩余磁通密度Br”Br“)被降低。 R含量的优选范围为30.5质量%至31.5质量%。通过将R的含量限制为该范围,可以进一步提高残余磁通密度Br或矫顽力Hcj。\n\n【0027】\n\n另外,除Tb之外的至少一种稀土元素优选含有Nd或Nd和Pr。尽管PR有效地在常温下改善矫顽力,但大量的含量是不适合的,因为高温下的矫顽力大。然而,PR通常包含在数字合金(Nd-Pr合金)中,并且曲粒合金比高纯度Nd金属相对便宜。考虑到在高温下的矫顽力,如果R仅是TB和ND,则非常理想,但必须使用昂贵的高纯度Nd。因此,为了廉价地提供稀土烧结磁体,可以接受适当量的PR的含量。\n\n【0028】\n\n此外,还可以含有Dy以外的稀土元素中的至少一种。尽管Dy可以提高稀土烧结磁体的矫顽力,因为可以增加添加量,但是已知残留的磁通密度与矫顽力改善成反比。在本发明中,BR 1.29T或更多,HCJ 2.4ma / M,(BH)最大320kJ / m非常适合目标电动机。3期望在保护上述更高的磁性性质的前提下替换TB。在下文中,“最大能量产品(BH)MAX”缩写为“(BH)MAX”。\n\n【0029】\n\n当Tb的含量限制为3.2质量%至5.2质量%时,当Tb的含量小于3.2质量%时,不能获得高矫顽力,如果它超过5.2质量%,则残留磁性助焊剂密度降低。要做。 Tb含量的优选范围为4.5质量%至5.0质量%,并且通过限制本发明,可以改善BR或HCJ。作为R,Tb 4.5质量%至5.0质量%,包括除剩余部分Nd和Tb之外的稀土元素的不可避免的杂质,并通过满足上述内容的范围获得较高的磁性。 。可以完成。\n\n【0030】\n\n上述Tb,Nd等的Rs可能不是纯元素,并且可以包含在一系列工业化区域中制造的不可避免的杂质。然而,作为本发明,BR 1.29T或更多,HCJ 2.4ma / m以上,(BH)最大320kJ / m3在适用于具有上述高磁特性的电动机的稀土烧结磁体中,少量稀土元素的杂质可能导致磁性的劣化。因此,优选选择r的纯度,以控制0.45质量%以下,0.4质量%或更小的Ce和0.05质量%或更低,以及Sm至0.1质量%以下。\n\n【0031】\n\n当B的含量小于0.91%时,不能获得高磁力,并且当它超过1.15质量%时,剩余磁通密度减小,因此其限制为1.15%的0.91质量%质量。更优选地,它为0.94质量%至1.06质量%,并且可以提高Br或Hcj。\n\n【0032】\n\n当氧气含量超过0.35质量时,矫顽力和残余磁通密度限制在0.35重量%。更优选地,它可以提高0.25质量%以下,可以提高Br或Hcj。\n\n【0033】\n\nPR,R,B的其余部分由Fe或Fe和Co组成。 CO可替换为50%的FE。此外,可以含有除Fe和Co以外的少量过渡金属元素。虽然CO对于改善温度特性和耐腐蚀性有效,但过度加入优选为10质量%以下,优选使用10质量%以下的组合,特别是0.85质量。重量%至0.95重量%的CO和残留Fe是优选的。\n\n【0034】\n\n除了上述基本要素之外,通过添加Al,V,Ni,Cu,Cu,Zn,Zr,Nb,Mo,In,Ga,Sn,HF,Ta和W作为M元素的至少一种,可以改善。添加量优选为2.0质量%以下。如果超过2.0质量%,则剩余磁通密度降低。在根据本发明的稀土烧结磁体中,在附加元件中,通过含有0.15质量%至0.25质量%,0.05质量%至0.15质量%,进一步提高磁性特性。可以完成。 Al和Cu可含有污染作为来​​自铁或铁酮的杂质的量,或者希望通过单独加入上述含量。\n\n【0035】\n\n随着含量的增加,作为含量的杂质的Si和Mn掺入杂质,因为含量增加,因此Si为0.05质量%或更低,以选择原料的纯度,以控制0.08质量%以下。是可取的。类似于Si和Mn,Ca,Mg,Ti等也引起磁性特性以降低稀土烧结磁体中的磁性,其特征在于本发明的高磁性。因此,期望选择原料的纯度,使得杂质中的Ca,Mg和Ti分别为0.02质量%。\n\n【0036】\n\n此外,碳是降低磁性的原因之一,稀土烧结磁体中的碳量是\n\n期望控制0.10质量%以下。因为除了从原料中混合除了与原料混合之外,碳在制造过程中混合,所以不混合碳的制造方法,例如延迟的喷射铣削。\n\n【0037】\n\n通过满足上述组合物,BR 1.29T或更多,HCJ 2.4ma / m或更高,(BH)最大320kJ / m3可以获得具有上述高磁性特性的电动机的稀土烧结磁体。由于根据本发明的稀土烧结磁体的特征在于其组合物,因此制造方法没有特别限制,而是通过施加下面详细描述的制造方法,可以获得根据本发明的稀土烧结。\n\n【0038】\n\n首先,作为第一步,将原料金属或合金溶解并浇铸以获得合金板。溶解和浇铸可以采用已知的手段,特别是条带铸造方法是优选的方法。\n\n【0039】\n\n作为下一步骤,合金板坯是研磨的,得到粗粉末粉末。也可以采用已知的方法来粗粉碎。\n\n【0040】\n\n接下来,通过在惰性气体气氛中在氧气量为200ppm或更小的惰性气体气氛中研磨研磨粉末。当氧气量超过200ppm时,所获得的粉碎粉末的氧气量增加,烧结后烧结磁体的氧气量超过0.35质量%,这是不优选的。作为惰性气体,可以使用氮气,氩气等。而且,对于喷射磨机,可以使用已知的装置。\n\n【0041】\n\n细碎粉末的平均粒径优选为2.0μm至2.7μm。如果小于2.0,则细碎粉末的氧浓度增加,如果超过2.7μm,则矫顽力是不可取的,因为矫顽力降低。\n\n【0042】\n\n精细研磨后的每一步都可以采用已知的磁场形成方法,烧结方法和热处理方法,特别是优选采用下面所示的方法。\n\n【0043】\n\n优选地使用磁场强度为2.0t或更大的脉冲磁场进行磁场的形成。由此,可以改善稀土烧结磁体的BR。\n\n【0044】\n\n在成形过程中,铣削粉末填充在模具中,密封,并且可以通过冷水压制成型来执行磁场取向。结果,进一步提高了稀土烧结磁体的残余磁通密度。通过在2.0t或更高的脉冲磁场中执行磁场对准,进一步提高了残留的磁通密度。\n\n【例子】\n\n【0045】\n\n实施例1(TB有限估计示例的示例)\n\n组成是质量百分比的ND24.5-xTB.xP.6.0B.1.0CO.0.9溶解在改变Tb的组成比X的合金和改变的合金中,通过3.0,3.2,3.8,4.5,5.0,5.0,5.5,5.0,5.5,通过条带铸造方法制造了合金熔融金属的合金淬火并获得合金板。通过氢气研磨和脱氢处理粗地粉碎合金板。此后,在氮气氛中在氮气氛中进行喷射铣削,相对于粗粉碎粉末获得平均粒径为2.3μm的细碎粉末。\n\n【0046】\n\n接下来,将得到的细碎粉末填充在模具中,并在磁场强度的磁场强度为0.8吨的磁磁场中形成。将得到的成型体在1333k烧结2小时,然后在823k下热处理1小时,得到烧结磁体。每个烧结磁体的氧气量为0.25质量%,碳含量为0.08质量%。\n\n有。此外,当分析每个烧结磁体的杂质时,Si 0.05质量%以下,Mn0.08质量%或更低,La 0.45质量%以下,Ce0.4质量%以下,SM 0.05%按质量或更小,y0.1质量%以下,Ca02质量%或更低,mg 0.02%(重量)或更小,TI.它为0.02质量%以下。此外,该烧结磁体含有0.20重量%,0.10重量%Cu。\n\n【0047】\n\n表1显示了所得烧结磁体的磁性。在表1中,标有*旁边的*在数字旁边是比较例,x为3.0和5.5。如表1所示,如果Tb的量小于3.2质量%,则降低HCL,并且不能满足2.4 mA / m以上,如果超过5.2质量%,则可以降低和满足1.29 T或更多。不能这样做,结果(bh)max320kj / m3我不能满足上述内容。因此,Tb的量限制为3.2质量%至5.2质量%。此外,从表1中可以清楚地看出,可以看出,获得的最佳磁性为4.5质量%至5.0质量%。\n\n【0048】\n\n【表格1】\n\n\n\n【0049】\n\n示例2(R Metull Limited的示例)\n\n组成是质量百分比的NDyTB.4.5P.6.0B.1.0CO.0.9剩余的Fe(可含有不可避免的杂质),Nd的组成比y改变为17.0,18.0,19.0,20.0,21.0,22.0和r量(Nd量+ Tb量+ Dy含量)是27.5,28.5,29.5 ,30.5,31.5,32.5,以与实施例1相同的方式获得烧结磁体,不同之处在于它用作改变的合金。每个烧结磁体的氧气量为0.25质量%。碳,Al,Cu和每个杂质的量类似于实施例1的烧结磁体。\n\n【0050】\n\n所得烧结磁体的磁性如表2所示。在表2中,标有*在数量旁边标记的*是比较例,R是17.0的量,r量为27.5,y为22.0,r为22.0,32.5。如表2所示,如果r的量小于28.5质量%,则不能烧结,如果它超过32.0质量%,则可以降低BR,并且不能满足1.29t或更多。结果,(bh)max320kj / m3我不能满足上述内容。因此,R的量限制为28.5质量%至32.0质量%。此外,如表2所示,可以看出,最大磁性以30.5质量%以31.5质量%获得。\n\n【0051】\n\n[表2]\n\n\n\n【0052】\n\n实施例3(B质量限制实施例的示例)\n\n组成是质量百分比的ND20.0TB.4.5P.6.0B.zCO.0.9除了将B的平衡比z变为0.89,0.94,1.00,1.06,16之外,烧结磁体以与实施例1相同的方式,除了示出的情况1之外,以与实施例1中相同的方式显示组成比Z 。我得到了它。每个烧结磁体的氧气量为0.25质量%。碳,Al,Cu和每个杂质的量类似于实施例1的烧结磁体。\n\n【0053】\n\n所得烧结磁体的磁性如表3所示。在表3中,标有*在数量旁边的*是比较例,Z为0.89和1.16。如表3所示,如果B的量小于0.91质量%,则将HCJ降低,并且不能满足2.4 mA / m以上,如果超过1.15质量%,则BR降低和BR降低并满足1.29t或更多。没有。因此,B的量限制为0.91质量%至1.15质量%。此外,从表3中可以清楚地看出,可以看出,最多的磁性从0.94质量%获得至1.06质量%。\n\n【0054】\n\n[表3]\n\n\n\n【0055】\n\n实施例4(氧气有限估计的示例)\n\n组成是质量百分比的ND20.0TB.4.5P.6.0B.1.0CO.0.9溶解由剩余的Fe(可含有不可避免的杂质)表示的合金后,通过条带铸造方法淬灭合金熔融金属,得到合金板。合金板坯大致采用氢气研磨和脱氢处理,粉碎粉末在氮气氛中研磨,氧气质量为100ppm,200ppm,1000ppm和3000ppm,并且细分粉末具有平均粒径2.3μm。获得。通过与实施例1中的相同的方法模塑,烧结,用相同的方法进行模塑,烧结,得到烧结磁体。\n\n【0056】\n\n所得烧结磁体的氧气量和磁性示于表4中。在表4中,*数字旁边的标记\n\n案例是对比例,氧的量为0.40质量%和0.55质量%。如表4所示,当氧气量超过0.35质量%时,所有Br,HCJ和(BH)Max降低,特别是矫顽力HCJ的降低是显着的。此外,当氧气量增加时,它不能烧结。因此,氧的量限制为0.35质量%或更低。此外,如表4所示,可以看出氧气量为0.25质量质量和更高的特性。\n\n【0057】\n\n另外,桌子4从喷射研磨时引入的氧的增加,可以看出烧结磁体中所含的氧气量增加。然后,为了抑制烧结体的氧气量至0.35质量%以下,必须在喷射铣削时将引入的氧的量设定为200ppm或更小。因此,喷射碾磨时引入的氧的量限制在200ppm或更小。\n\n【0058】\n\n表4.\n\n\n\n【0059】\n\n实施例5(平均粒子图的示例)\n\n组成是质量百分比的ND20.0TB.4.5P.6.0B.1.0CO.0.9溶解由剩余的Fe(可含有不可避免的杂质)表示的合金后,通过条带铸造方法淬灭合金熔融金属,得到合金板。通过氢气研磨和脱氢处理粗地粉碎合金板。当所得粗粉被射流研磨时,改变粗粉粉末的输入量,并在氮气氛中进行喷射铣削,并在表5中所示的平均粒径的细碎粉末。通过与实施例1中的相同方法模塑,烧结和热成型,烧结和热成型,得到烧结磁体。\n\n【0060】\n\n所得烧结磁体的氧气量和磁性如表5所示。如表5所示,可以看出,随着平均粒径降低,烧结磁体的氧气量增加。平均粒径为1.8μm,因此氧气量太高,因此不能烧结。另一方面,如果平均粒径增加,则氧气量减小,但磁性特性,特别是矫顽力HCJ劣化。因此,细碎粉末的平均粒径优选为2.0μm至2.7μm。然而,由于优选的范围也受到喷射研磨时引入的氧的量的影响,因此希望适当地选择喷射铣削的最佳状态。\n\n【0061】\n\n[表5]\n\n\n\n【0062】\n\n实施例6(模具+脉冲的示例)\n\n组成是质量百分比的ND20.0TB.4.5P.6.0B.1.0CO.0.9溶解由剩余的Fe(可含有不可避免的杂质)表示的合金后,通过条带铸造方法淬灭合金熔融金属,得到合金板。通过氢气研磨和脱氢处理,合金板坯大致研磨,粗粉粉末在氮气氛中射流,其氧量为100ppm,得到平均粒径为2.3μm的细碎粉末。\n\n【0063】\n\n接下来,将得到的细碎粉末填充在模具中,并施加2.0吨或3.5吨的脉冲磁场以定向2.0 t或3.5 t的脉冲磁场,然后形成细碎的粉末。将得到的成型体在1333k烧结2小时,然后在823k下热处理1小时,得到烧结磁体。每个烧结磁体的氧气量为0.25质量%。\n\n【0064】\n\n所得烧结磁体的磁性如表6所示。另外,为了参考,精细分割粉末的取向\n\n表6中示出了0.8℃(样品No.31 =实施例1样品No.4)的磁场强度的实例。如表6所示,通过在2.0t或更大的脉冲磁场中定向细碎的粉末在2.0t或更多的脉冲磁场中获得的那些,并且(Bh)最大化比细分粉末在0.8的磁磁场中取向的那些T.做。然后,可以看出,通过增加脉冲磁场进一步改善BR和(BH)Max。因此,为了改善BR和(BH)Max,优选的是在具有2.0t或更大的磁场强度的脉冲磁场中形成磁场中的磁场。\n\n【0065】\n\n6.\n\n\n\n【0066】\n\n示例7(CIP +脉冲示例的示例)\n\n组成是质量百分比的ND20.0TB.4.5P.6.0B.1.0CO.0.9通过与实施例1中的相同的方法溶解,溶解由残留的Fe(可以含有不可避免的杂质)的合金,以获得平均粒径为2.3μm的细碎粉末。所得细碎的粉碎粉末在直径为25mm的橡胶模具中填充密度为3.5g / cm,高度为25mm3橡胶模具被橡胶盖密封。接下来,在该橡胶模具中,施加磁场强度的脉冲磁场或3.5 T的磁场强度的脉冲磁场,并对准。\n\n【0067】\n\n接下来,在通过冷水压力成型模制取向后模制橡胶模具之后,移除橡胶模具,并将内成型体移除,并将模塑主体在1333k烧结2小时,并用823k热处理。进一步进行。产生烧结磁体。每个烧结磁体的氧气量为0.25质量%。\n\n【0068】\n\n所得烧结磁体的磁性如表7所示。另外,为了参考,表7中示出了不使用橡胶模具的磁场对准(样品No.34 =实施例1样品No.4)的磁场对准的磁特性(样品号34 =实施例1。 。如表7所示,精细分开的粉末填充在模具中,通过脉冲磁场,磁场取向,预形成后进行密封和冷静压模塑。\n\n虽然矫顽力HCJ略微减少,但是大大提高了BR和(BH)。然后,可以看出,通过增加脉冲磁场进一步改善BR和(BH)Max。因此,为了改善BR和(BH)Max,在模具中填充细碎的粉末,在脉冲磁场引起的磁场取向后填充在模具中,并且还执行脉冲磁场。强度优选为2.0 T或更多。\n\n【0069】\n\n表7.\n\n\n\n【工业可用性】\n\n【0070】\n\n根据本发明的稀土烧结磁体,BR 1.29T或更多,HCJ 2.4ma / m以上,(BH)最大320kJ / m3由于它具有更高的磁特性,因此它是电机磁铁的最佳状态。');
INSERT INTO `os_patent_instruction_text` VALUES (13038, 22867, '【技術分野】\n\n本発明は、R-T-B系永久磁石用原料合金に係り、特にストリップキャスト法により製造されるR-T-B系永久磁石用原料合金薄片に関する。また、本発明は上記のR-T-B系永久磁石用原料合金から作製したR-T-B系永久磁石に関する。\n\n【背景技術】\n\n永久磁石の中で最大の磁気エネルギー積を有するR-T-B系永久磁石は、その高特性からHD(ハードディスク)、MRI(磁気共鳴映像法)、各種モーター等に使用されている。近年、その耐熱性向上に加え、市場の省エネルギーへの要望が高まり、自動車を含めたモーター用途の比率が上昇している。\n\nここで、「R-T-B系永久磁石」における「R」は、Ndの一部をPr、Dy等の他の希土類元素で置換したものが主であり、Yを含む希土類元素のうち少なくとも1種である。「T」はFeの一部をCo、Ni等の他の遷移金属で置換したものである。「B」は硼素であり、一部をCまたはNで置換したものを含むものとする。「R-T-B系永久磁石」は、その主成分がNd、Fe、Bであるため、「Nd-Fe-B系磁石」または「R-Fe-B系磁石」と総称されている。\n\n本明細書における「R-T-B系永久磁石」は、Cu、Al、Ti、V、Cr、Ga、Mn、Nb、Ta、Mo、W、Ca、Sn、Zr、および/またはHfなどの元素を1種または複数組み合わせて添加した磁石を含むものとする。このような元素の添加により、磁気特性などの諸特性向上が図れることが知られている。\n\nR-T-B系合金は、磁化作用に寄与する強磁性相であるR2T14B相を主相とし、非磁性で希土類元素の濃縮した低融点のRリッチ相が共存する合金である。R-T-B系合金は、活性な金属であるため、一般に真空又は不活性ガス中で溶解や鋳造が行われる。また、鋳造されたR-T-B系合金塊から粉末冶金法によって焼結磁石を作製するには、合金塊を3μm(FSSS:フィッシャーサブシーブサイザーでの測定)程度に粉砕して合金粉末にした後、磁場中でプレス成形される。プレス成形によって得られた粉末成形体は、焼結炉によって約1000〜1100℃の高温で焼結される。このようにして作製された焼結体に対しては、必要に応じ熱処理、機械加工、さらに耐食性を向上するためにメッキを施すのが一般的である。\n\nR-T-B系焼結磁石におけるRリッチ相は、以下のような重要な役割を担っている。\n\n1)Rリッチ相の融点は低く、焼結時に液相となり、磁石の高密度化ひいては磁化の\n\n向上に寄与する。\n\n2)粒界の凹凸を無くし、逆磁区のニュークリエーションサイトを減少させ保磁力を高める。\n\n3)主相を磁気的に絶縁し保磁力を増加する。\n\n従って、成形した磁石中のRリッチ相の分散状態が悪いと局部的な焼結不良、磁性の低下をまねくため、成形した磁石中にRリッチ相が均一に分散していることが重要となる。このR-T-B系焼結磁石中におけるRリッチ相の分布は、原料であるR-T-B系合金の組織に大きく影響される。\n\nR-T-B系合金を鋳造する方法として、ストリップキャスト法(以下、「SC法」と略記する。)が開発され、実際の工程に使用されている。SC法では、内部が水冷された銅ロール上に合金の溶湯を流し、合金溶湯を急冷凝固させることにより、厚さ0.1〜1mm程度の薄片を鋳造する。SC法によれば、合金の結晶組織が微細化するため、Rリッチ相が微細に分散した組織を有するR-T-B系合金を生成することが可能となる。このように、SC法で鋳造された合金は、内部のRリッチ相が微細に分散しているため、粉砕、焼結後の磁石中のRリッチ相の分散性も良好となり、磁石の磁気特性の向上を達成することができる。(特開平5-222488号公報および特開平5-295490号公報)。\n\nSC法により鋳造された合金薄片は、組織の均質性も優れている。組織の均質性は、結晶粒径やRリッチ相の分散状態で比較することができる。SC法で作製した合金薄片では、合金薄片の鋳造用ロール側(以降、鋳型面側とする)にチル晶(等軸晶)が発生することもあるが、全体として急冷凝固でもたらされる適度に微細で均質な組織を得ることができる。\n\n以上のように、SC法で鋳造したR-T-B系合金は、Rリッチ相が微細に分散し、組織の均質性にも優れているため、焼結磁石を作製する場合には、最終的な磁石中のRリッチ相の均質性が高まり、磁気特性を向上させることができる。このように、SC法で鋳造したR-T-B系合金塊は、焼結磁石を作製するための優れた組織を有している。しかし、磁石の特性が向上するにつれて、ますます原料合金の組織、特にRリッチ相の存在状態の高度な制御が求められるようになってきている。\n\n先に、本発明者らは、鋳造されたR-T-B系合金の組織と、水素解砕や微粉砕の際の挙動との関係を研究した結果、焼結磁石用の合金粉末の粒度を均一に制御するためには、Rリッチ相の分散状態を制御することが重要であることを見出した(特開2003-188006号公報)。そして、合金中の鋳型面側に生成されるRリッチ相の分散状態が極端に細かな領域(微細Rリッチ相領域)は微粉化しやすく、合金の粉砕安定性を低下させると共に、粉末の粒度分布をブロードにすることを見出し、微細Rリッチ相領域を減少させることが磁石特性を向上させるために必要であることを知見した。\n\n特開2003-188006号公報に開示されている微細Rリッチ相領域の少ない合金によれば、粉砕安定性、磁気特性の向上が可能である。しかし、微細Rリッチ相領域を減少させるだけでは、上述したRリッチ相の本来の役割を十分に発揮させることができず、さらなる合金組織の制御による永久磁石の高磁気特性化が望まれている。\n\n本発明は、合金中に存在するRリッチ相をよりミクロなスケールで制御することで、磁気特性向上をもたらすことが可能なR-T-B系永久磁石用原料合金を提供することを目的とする。\n\n【発明の開示】\n\n本発明者らは、R-T-B系合金中に存在するRリッチ相をよりミクロなスケールで観察した結果、Rリッチ相の形状と磁気特性に大きな関係があることを見出した。すなわち本発明は、以下のとおりである。\n\n(1)R2T14B柱状結晶とRリッチ相を含む薄板状のR-T-B系永久磁石用原料合金(RはYを含む希土類元素の少なくとも1種、TはFeまたはFeとFe以外の遷移金属元素の少なくとも1種、Bはボロンまたはボロンと炭素)であって、該薄板の法線方向を含む任意の断面で観察された合金組織において、アスペクト比が10以上かつその長\n\n軸方向が薄板表面に対して90±30°であるRリッチ相の面積率が、合金中に存在する全てのRリッチ相の30%以上であることを特徴とするR-T-B系永久磁石用原料合金。\n\n(2)アスペクト比が10以上かつその長軸方向が薄板表面に対して90±30°であるRリッチ相の面積率が、合金中に存在する全てのRリッチ相の50%以上であることを特徴とする上記(1)記載のR-T-B系永久磁石用原料合金。\n\n(3)アスペクト比が10以上かつその長軸方向が薄板表面に対して90±30°であるRリッチ相の面積率が、合金中に存在する全てのRリッチ相の70%以上であることを特徴とする上記(1)記載のR-T-B系永久磁石用原料合金。\n\n(4)アスペクト比が20以上であることを特徴とする上記(1)ないし(3)記載のR-T-B系永久磁石用原料合金。\n\n(5)R2T14B柱状結晶とRリッチ相を含む薄板状のR-T-B系永久磁石用原料合金(RはYを含む希土類元素の少なくとも1種、TはFeまたはFeとFe以外の遷移金属元素の少なくとも1種、Bはボロンまたはボロンと炭素)であって、該薄板の法線方向を含む任意の断面で観察された合金組織において、アスペクト比が10以上かつその長軸方向が薄板表面に対して30°以下または150°以上であるRリッチ相の面積率が、合金中に存在する全てのRリッチ相の50%以下であることを特徴とするR-T-B系永久磁石用原料合金。\n\n(6)アスペクト比が10以上かつその長軸方向が薄板表面に対して30°以下または150°以上であるRリッチ相の面積率が、合金中に存在する全てのRリッチ相の30%以下であることを特徴とする上記(5)記載のR-T-B系永久磁石用原料合金。\n\n(7)R2T14B柱状結晶とRリッチ相を含む薄板状のR-T-B系永久磁石用原料合金(RはYを含む希土類元素の少なくとも1種、TはFeまたはFeとFe以外の遷移金属元素の少なくとも1種、Bはボロンまたはボロンと炭素)であって、該薄板の法線方向を含む任意の断面で観察された合金組織において、\n\nアスペクト比が10以上かつその長軸方向が薄板表面に対して90±30°であるRリッチ相の面積率が、合金中に存在する全てのRリッチ相の30%以上であり、且つ、アスペクト比が10以上かつその長軸方向が薄板表面に対して30°以下または150°以上であるRリッチ相の面積率が、合金中に存在する全てのRリッチ相の50%以下であることを特徴とするR-T-B系永久磁石用原料合金。\n\n(8)アスペクト比が10以上かつその長軸方向が薄板表面に対して90±30°であるRリッチ相の面積率が、合金中に存在する全てのRリッチ相の50%以上であり、且つ、アスペクト比が10以上かつその長軸方向が薄板表面に対して30°以下または150°以上であるRリッチ相の面積率が、合金中に存在する全てのRリッチ相の30%以下であることを特徴とする上記(7)記載のR-T-B系永久磁石用原料合金。\n\n(9)ストリップキャスト法で製造されることを特徴とする上記(1)ないし(8)記載のR-T-B系永久磁石用原料合金。\n\n(10)平均厚さが0.10mm以上0.50mmであることを特徴とする(9)記載のR-T-B系永久磁石用原料合金。\n\n(11)上記(1)ないし(10)記載のR-T-B系合金から作製したR-T-B系永久磁石。\n\n【図面の簡単な説明】\n\n図1は、従来のSC法で製造した凝集したRリッチ相を含む希土類磁石用合金薄片の断面組織を示す図である。\n\n図2は、従来のSC法で製造した高次のデンドライトアームを有するRリッチ相を含む希土類磁石用合金薄片の断面組織を示す図である。\n\n図3は、本発明に係る希土類磁石用合金薄片の断面組織を示す図である。\n\n図4は、ストリップキャスト法の鋳造装置の模式図である。\n\n【発明を実施するための最良の形態】\n\n以下、図面を参照しながら、本発明によるR-T-B系永久磁石用原料合金の実施形態\n\nを説明する。\n\nまず、図1および図2を参照する。これらの図は、従来のSC法により鋳造されたNd-Fe-B系合金(Nd31.5質量%)の薄片の断面をSEM(走査電子顕微鏡)にて観察した時の反射電子像である。共に図面の左側が合金の鋳型面側、右側が合金の自由面側である。SC法による合金溶湯の急冷凝固を行なう場合、合金溶湯は鋳型面側から急冷され、結晶化してゆく。\n\n図1における白い部分は、Ndリッチ相(RがNdになっているため、Rリッチ相を「Ndリッチ相」と呼ぶ場合がある。)を示している。図1からわかるように、Ndリッチ相はプール状に凝集している。一方、図2では非常に微細なNd-rich相がデンドライト状に存在している。\n\nR-T-B系合金から焼結磁石を作製するには、R-T-B系合金を粉砕し、プレスして成形体を作製する必要がある。R-T-B系合金を粉砕する方法としては、まず、水素吸蔵によってR-T-B系合金を脆化した後、微細に粉砕することが好ましい。水素吸蔵による脆化によってR-T-B系合金は粗く粉砕(解砕)される。このR-T-B系合金の水素解砕工程において、水素はRリッチ相から吸収され、膨張し脆い水素化物となる。したがって、水素解砕では、合金中にRリッチ相に沿った、或いはRリッチ相を起点とした微細なクラックが導入される。その後の微粉砕工程で、水素解砕で生成した多量の微細クラックをきっかけに合金が壊れるため、Rリッチ相の分散状態が微粉砕能率、微粉形状に影響を及ぼす傾向があった。そこで、本発明者らは、Rリッチ相をよりミクロなスケールで観察し、個々のRリッチ相の形状と水素解砕で形成した微細クラック、さらには磁気特性に関係があることを見出した。\n\n図1に示すようなプール状のRリッチ相からは、水素解砕時に放射状に微細クラックが形成されると同時に、自身も脆化する。そのため、続くジェットミル粉砕時に、脆化したプール状のRリッチ相は、多くの部分が主相から分離され非常に微細に粉砕される。このようなRリッチ相からなる極めて細かい微粉は、サイクロンで分離され回収できない割合が高いため、粉砕中の組成変動の原因となる。また、Rリッチ相からなる微粉は非常に活性であるため、酸素濃度の増加による磁気特性低下の原因となり、工程の安全対策強化も必要となり、製造効率の低下、コストの上昇をまねく。\n\n一方、図2に示すような、デンドライト状に存在する非常に細かいRリッチ相は、その隣接する細かい枝状のRリッチ相同士の間隔が、一般の焼結磁石用での粉砕粒度よりも小さい。そのため、ジェットミル後の微粉内部に細かい枝状のRリッチ相が取り込まれる割合が高くなる。Rリッチ相は前記したように、焼結時に液相となり、焼結に寄与する。そのためには、Rリッチ相は各微粉の表面に存在して、焼結時は微粉同士を濡らす必要がある。しかし、粉の中に入り込んだRリッチ相にはそのような効果は期待できず、また、表面に染み出すとしても十分な効果をもたらす事は出来ず、磁石の焼結密度の低下を引き起こす。\n\nまた、デンドライト状に存在する非常に細かいRリッチ相が多く存在すると、デンドライトの分岐部分が粉末内部に多く存在することとなり、異方性の向きが異なるR2T14B相が粉末内部に共存する割合が高くなるため、得られる永久磁石の配向度が低下するという問題を生じる。\n\n次に、図3を参照して、SC法により鋳造された本発明によるNd-Fe-B系合金(Nd31.5質量%)を説明する。図3は、本発明によるNd-Fe-B系合金の鋳片の断面をSEM(走査電子顕微鏡)にて観察した時の反射電子像を示す。\n\n図3からわかるように、断面写真に現れているNdリッチ相のうち、厚さ方向を中心にある限定された角度範囲内に伸長する層状(ラメラー状)のNdリッチ相の割合が支配的である。図1に示されているプール形状や図2に示されている小枝状のRリッチ相は、わずかに存在しているが、その存在比率は少ない。このような組織を有する合金を、水素解砕後にジェットミル粉砕によって粉末化すれば、図1および図2の組織を有する合金における問題点である、組成変動、酸素、窒素濃度の増加による磁気特性の低下、焼結密度の低下、配向度の低下などの問題を解決することが可能である。その結果、Rリッチ相本来\n\nの役割を十分に発揮することができるR-T-B系永久磁石用として最適な原料合金を得ることができ、このような原料合金を用いることにより、高磁気特性を有するR-T-B系永久磁石を得ることが可能となる。\n\n既存のR-T-B系合金でも、図3に示すような組織は部分的には存在する。また、R-T-B系合金中のRリッチ相の分散状態は、鋳造時における溶湯が凝固した後の冷却速度の制御、或いは熱処理によって制御可能であることは特開平09-170055号公報や特開平10-36949号公報に記載されている。しかし、既存のR-T-B系合金に図3に示すような組織が部分的に存在しても、図1および図2に示すような組織が大半を占めるため、上述したようなRリッチ相本来の役割を十分に発揮することができない。\n\n以下、本発明によるR-T-B系永久磁石用原料合金を詳細に説明する。\n\n(1)ストリップキャスト法\n\nまず、図4を参照して、R-T-B系永久磁石用原料合金のストリップキャスト法による鋳造について説明する。図4は、ストリップキャスト法による鋳造のための装置の模式図を示している。\n\n一般に、R-T-B系合金は、その活性な性質のため、真空または不活性ガス雰囲気中で、耐火物ルツボ1を用いて溶解される。溶解された合金の溶湯は、1300〜1500℃で所定の時間保持された後、必要に応じて整流機構、スラグ除去機構を設けたタンディッシュ2を介して、内部を水冷された鋳造用回転ロール3に供給される。\n\n溶湯の供給速度および回転ロールの回転数は、求める合金の厚さに応じて適切に制御させる。回転ロールの回転周速度は、0.5〜3m/s程度に設定されることが好ましい。鋳造用回転ロールの材質は、熱伝導性がよく入手が容易であるという理由から銅または銅合金が適当である。回転ロールの材質やロールの表面状態によっては、鋳造用回転ロールの表面にメタルが付着しやすいため、必要に応じて清掃装置を設置すると、鋳造されるR-T-B系合金の品質が安定する。回転ロール上で凝固した合金4はタンディッシュの反対側でロールから離脱し、回収コンテナ5で回収される。この回収コンテナに加熱、冷却機構を設けることでRリッチ相の組織の状態を制御できる。\n\n本発明の合金を製造する場合、鋳造ロール上での冷却(これを「一次冷却」と称する。)と回収コンテナ内での冷却(これを「二次冷却」と称する)とを適切に設定する必要がある。\n\n一次冷却は、具体的には、鋳造ロールから離れる時の合金の温度を600〜850℃にすることである。鋳造ロールから離れる時の合金の温度をRリッチ相の融点よりも高くする必要がある。Rリッチ相の融点は組成により多少上下はするが、600℃以上である。鋳造ロールから離れる時の合金の温度がRリッチ相の融点よりも低い場合は、Rリッチ相の凝固が完了しているため、図2に示すような組織になる。一方、850℃より高い場合は、ロール離脱後にRリッチ相がプール状に凝集し図1に示すような組織になる。鋳造ロールから離れる時の合金のより好ましい温度範囲は600〜800℃である。さらに好ましい温度範囲は640〜750℃である。ただし、好ましい温度範囲は合金組成によって多少上下する。\n\nRリッチ相の分散状態および形状は、TRE(全希土類含有量)に大きく依存する。例えば、TREが低くRリッチ相が少ない合金では、鋳造ロール上での伐熱量が少ないため、鋳造ロール離脱時の合金温度が高くなる傾向があり、Rリッチ相が凝集しプール状化する傾向が強まる。一方、TREが高くRリッチ相が多い合金では、鋳造ロール上での伐熱量が多いため、高次のデンドライトアームを有する組織を生成する傾向が強まる。したがって、鋳造ロールから離れる時の合金温度を上述の適切な温度範囲にするため、合金の厚みを、TREが少ない場合は薄めに、TREが多い場合は厚めにする必要がある。具体的にはTREの目安が30wt%以下の場合は、一次冷却の程度を大きくするため、合金の平均の厚みを0.10〜0.30mmにすることが好ましい。より好ましくは0.15〜0.27mmである。さらに好ましくは0.20〜0.25mmである。TREの目安が30wt%から33wt%の場合、合金の好ましい平均の厚みは0.25〜0.35mmである。より好ましくは0.26〜0.32mmである。TREの目安が33wt%以上\n\nの場合、合金の好ましい平均の厚みは0.28〜0.50mmである。より好ましくは0.28〜0.35mmである。\n\nまた、一次冷却の程度は、鋳造ロールの表面粗さを適切に選んで、合金からの鋳造ロール上での伐熱量を制御することでも可能である。この方法は特にTREの目安として30wt%以下か33wt%以上の場合に有効である。鋳造ロールの表面粗さを粗くすることにより、必要以上の伐熱を抑制することができる。TREが33wt%以上では、多量のRリッチ相によってもたらされる鋳造ロールへの高い熱伝達を鋳造ロールの表面粗さを粗くすることにより、適当に抑制することができる。この場合の目安の表面粗さは十点平均粗さRzで20ミクロン以上である。TRE30wt%以下の場合については、逆にロール上での一次冷却を阻害しないように表面粗さは20ミクロン程度以下とし、Rリッチ相の過度の凝集を防止する事が好ましい。しかし、表面粗さはロール表面材質など他の要因の影響も受けるため、上記した数値に限定されるものではない。\n\n鋳造ロール表面温度は、合金溶湯とロールの濡れ性に影響する。温度が低すぎると合金溶湯とロールの濡れが悪くなり、両者の接触の巨視的な不均一をもたらす傾向がある。その結果、合金に温度分布が生じ、前記の好ましい鋳造ロール離脱時の合金温度からの変動要因となり、本発明の特定の形状を有するRリッチ相の生成が困難となる。一方、温度が高すぎると、合金溶湯とロールの濡れ性が良好となり、部分的な焼きつきを生じる事がある。ロール表面への合金の焼きつきは、その部分での熱伝達、濡れ性の変動をもたらし、合金組織変動の要因となるため、やはり本発明の特定の形状を有するRリッチ相の生成が困難となる。また、焼き付いた合金量がさらに多くなると、安定した操業が困難となり、生産効率の低下を招く。したがって、鋳造ロール表面温度は50〜400℃が適当であり、100〜300℃が好ましい。さらに好ましくは150〜200℃である。ここで示すロール表面の温度は、溶湯がロールに接触する部分のものであり、直接の測定は困難であるが、鋳造面直下に埋め込んだ熱電対、あるいはタンディッシュ下部など合金や溶湯に接触しない部分のロール表面に接触した熱電対の測定値から計算で求める事が可能である。\n\n一方、二次冷却は、例えば、回収コンテナ内に仕切り板を設置し、この仕切り板の間隔を適切に設定し、また仕切り板の内部をArなどの不活性ガスや水等で冷却することで、回収した合金の冷却速度を制御することが有効である。本発明の合金を製造する場合、回収コンテナに回収した時の合金の温度が650〜700℃の場合、600℃までの好ましい冷却速度は3〜30℃/分、より好ましくは3〜20℃/分である。回収コンテナに回収した時の合金の温度が700〜800℃の場合は、600℃までの好ましい冷却速度は10〜40℃/分、さらに好ましくは10〜30℃/分である。回収コンテナに回収した時の合金の温度が800〜850℃の場合は、600℃までの好ましい冷却速度は20〜50℃/分、より好ましくは30〜50℃/分である。これらの温度範囲において、上限を超えると、図2に示すような組織になりやすくなる。また下限以下になると、図1に示すような組織になりやすくなる。\n\nなお、本発明の合金は組織を規定するものであり、製造方法は上記の方法に限られるものではない。\n\n本発明の合金薄片の厚さは、0.1mm以上0.5mm以下とするのが好ましい。合金薄片の厚さが0.1mmより薄いと凝固速度が過度に増加し、Rリッチ相の分散が細かくなりすぎる。また合金薄片の厚さが0.5mmより厚いと凝固速度低下によるRリッチ相の分散性の低下などの問題を招く。\n\n(2)合金中のRリッチ相\n\n本発明は、R2T14B柱状結晶とRリッチ相を含む薄板状のR-T-B系永久磁石用原料合金(RはYを含む希土類元素の少なくとも1種、TはFeまたはFeとFe以外の遷移金属元素の少なくとも1種、Bはボロンまたはボロンと炭素)である。そして、薄板の法線方向を含む任意の断面で観察された合金組織において、アスペクト比が10以上かつその長軸方向が薄板表面に対して90±30°であるRリッチ相の面積率が、合金中に存在する全てのRリッチ相の30%以上である。その結果、焼結磁石製造工程における微粉砕時に組成変動が少なく、酸素および窒素濃度の増加による磁気特性の低下がなく、焼\n\n結密度及び配向度の低下がない、Rリッチ相本来の役割を十分に発揮することができるR-T-B系永久磁石用として最適な原料合金を得ることができる。また、この原料合金を用いることにより、高磁気特性を有するR-T-B系永久磁石を得ることが可能となる。\n\n合金中のRリッチ相のアスペクト比が10未満の場合は、Rリッチ相は凝集したプール状であり、そのようなRリッチ相の割合が増加すると粉砕時のRリッチ相の脱落、過粉砕による組成変動が増加する。\n\nさらに、アスペクト比が10以上でも、長軸方向が薄板表面に対して90±30°の範囲外では、Rリッチ相が必要以上にその間隔の細かい小枝状である可能性が高い。そのようなRリッチ相は、金属組織学的には高次のデンドライトと説明できるが、実際の合金組織で1次デンドライトと2次以上の高次のデンドライトの識別には個人差が生ずる可能性が高く、幾何学的に定義することとし、本範囲を定めた。\n\nその結果、アスペクト比が10以上かつその長軸方向が薄板表面に対して90±30°であるRリッチ相の面積率が、合金中に存在する全てのRリッチ相の30%以下となると、磁気特性の低下が顕著となった。\n\n好ましくは、アスペクト比が10以上かつその長軸方向が薄板表面に対して90±30°であるRリッチ相の面積率が、合金中に存在する全てのRリッチ相の50%以上であることである。より好ましくは、アスペクト比が10以上かつその長軸方向が薄板表面に対して90±30°であるRリッチ相の面積率が、合金中に存在する全てのRリッチ相の70%以上であることである。\n\nさらに好ましくは、上記合金において、アスペクト比が20以上であることである。より好ましくは、上記合金において、アスペクト比が30以上であることである。\n\nあるいは、アスペクト比が10以上かつその長軸方向が薄板表面に対して30°以下または150°以上であるRリッチ相の面積率が、合金中に存在する全てのRリッチ相の50%以下であることである。アスペクト比が10以上でも、長軸方向が薄板表面に対して30°以下または150°以上であるRリッチ相は、その間隔が細かい小枝状の高次のデンドライトアームである可能性が特に高い。\n\n好ましくは、アスペクト比が10以上かつその長軸方向が薄板表面に対して30°以下または150°以上であるRリッチ相の面積率が、合金中に存在する全てのRリッチ相の30%以下であることである。\n\nあるいは、アスペクト比が10以上かつその長軸方向が薄板表面に対して90±30°であるRリッチ相の面積率が、合金中に存在する全てのRリッチ相の30%以上であり、且つ、アスペクト比が10以上かつその長軸方向が薄板表面に対して30°以下または150°以上であるRリッチ相の面積率が、合金中に存在する全てのRリッチ相の50%以下であることである。\n\n好ましくは、アスペクト比が10以上かつその長軸方向が薄板表面に対して90±30°であるRリッチ相の面積率が、合金中に存在する全てのRリッチ相の50%以上であり、且つ、アスペクト比が10以上かつその長軸方向がメタル表面に対して30°以下または150°以上であるRリッチ相の面積率が、合金中に存在する全てのRリッチ相の30%以下であることである。\n\n上述したアスペクト比10以上あるいはアスペクト比20以上あるいはアスペクト比30以上のRリッチ相は、その長軸寸法が薄板厚み寸法の5%以上、好ましくは10%以上の長さを有することが好ましい。\n\n合金中のRリッチ相のアスペクト比、薄板表面に対する長軸方向の角度、および、そのようなRリッチ相の面積率は、Rリッチ相が主相よりもBEIで輝度が高いことから、画像解析装置で主相とRリッチ相を識別した上で解析する事ができる。例えば、ランダムに選択した10枚の合金薄片断面のBEIを適当な倍率で撮影し、それぞれの10枚の写真においてその写真中のRリッチ相の総面積と、所定のアスペクト比でその長軸方向が所定の角度範囲にあるRリッチ相の合計面積をそれぞれ画像解析処理して測定する。そして、それぞれの写真で求めた所定のアスペクト比でその長軸方向が所定の角度範囲にあるRリッチ相の合計面積の合計を、撮影した10枚の写真のRリッチ相の総面積の合計で除した\n\n値を求めれば、所定のRリッチ相の面積率とみなすことができる。\n\n(3)合金中のR2T14B相\n\n本発明による薄板状のR-T-B系永久磁石用原料合金は、強磁性相であるR2T14B相を主相とする。R2T14B相は柱状をなしており、該R2T14B柱状結晶は、薄板表面に対して90±30°の角度内に長軸を有していることが好ましい。また、長軸の長さが薄板厚み寸法の30%以上、好ましくは50%以上であることが好ましい。さらには、上記の好ましいR2T14B柱状結晶が、薄板全体におけるR2T14B柱状結晶の30%以上、好ましくは50%以上含有されていることが好ましい。\n\nなお、この場合のR2T14B柱状結晶とは、磁気Kerr効果を利用した偏光顕微鏡で観察される結晶方位が揃ったかたまりを指す。\n\n以下、本発明の実施例および比較例を説明する。\n\n【実施例1】\n\n合金組成が、Nd:31.5質量%、B:1.00質量%、Co:1.0質量%、Al:0.30質量%、Cu:0.10質量%、残部鉄になるように、金属ネオジウム、フェロボロン、コバルト、アルミニウム、銅、鉄を配合した原料を高周波溶解炉で溶解し、溶湯をストリップキャスト法にて鋳造して、合金薄片を作製した。\n\n鋳造用回転ロールの直径は300mm、材質は肉厚50mmの純銅で、内部は水冷されており、鋳造時のロールの周速度は1.0m/sで、平均厚さ0.27mmの合金薄片を生成した。その際、鋳造ロール表面の平均粗さはRzで12ミクロンであった。目視観察では、合金は鋳造ロールに均一に乗っており、鋳造ロールへの焼きつきは認められなかった。\n\nまた、鋳造ロール表面の底部に熱電対を接触させ、鋳造中の鋳造ロールの表面温度を測定した。さらに、鋳造ロール用冷却水の水量と出入り口での温度差、鋳造ロールから排出される水温も測定し、これらの測定値からタンディッシュの溶湯が鋳造ロールに接触している位置での鋳造ロールの表面温度は170℃と計算された。\n\nまた、赤外線温度計でロールを離脱した合金薄片の温度を測定したところ、730℃であった。収容する回収コンテナ内には、冷却用Arガスを流通させた仕切り板を設置した。回収コンテナ側面から内部に熱電対を差込み、合金の温度変化を測定したところ、最高温度は720℃であり、600℃までの平均の冷却速度は22℃/分であった。\n\n得られた合金薄片を10枚埋め込み、研摩した後、走査型電子顕微鏡(SEM)で各合金薄片について反射電子線像(BEI)を倍率100倍で撮影した。撮影した写真を画像解析装置に取り込み測定したところ、アスペクト比が10以上かつその長軸方向がメタル表面に対して90±30°であるRリッチ相の面積率は、合金中に存在する全てのRリッチ相の80%であった。また、アスペクト比が20以上かつその長軸方向がメタル表面に対して90±30°であるRリッチ相の面積率は、合金中に存在する全てのRリッチ相の65%であった。一方で、アスペクト比が10以上かつその長軸方向がメタル表面に対して30°以下または150°以上であるRリッチ相の面積率が、合金中に存在する全てのRリッチ相の6%であった。\n\n(比較例1)\n\n実施例1と同様の組成に原料を配合し、実施例1と同様にして溶解およびSC法による鋳造を実施した。但し、鋳造ロールの肉厚は90mmとし、鋳造ロール表面の平均粗さはRzで7ミクロンとした。また合金薄片の平均厚さは0.35mmとした。目視観察では、鋳造ロール上の合金温度が異常に高い部分が少量発生し、一部で焼きつき現象が認められた。\n\n実施例1と同様の方法で求めたタンディッシュの溶湯が鋳造ロールに接触している位置での鋳造ロールの表面温度は400℃であった。\n\nまた、赤外線温度計でロールを離脱した焼きつきの無い合金薄片の温度を測定したところ、820℃であった。また、ロールを離脱した合金薄片を収容する回収コンテナ内は、特別な冷却機構を設けなかった。回収コンテナ側面から内部に差込んだ熱電対で合金の温度変化を測定したところ、最高温度は810℃であり、600℃までの平均の冷却速度は\n\n6℃/分であった。\n\n得られた焼きつきの無い合金薄片を実施例1と同様に評価した結果、Rリッチ相の多くが凝集してプールを形成していたため、アスペクト比が10以上であるRリッチ相の面積率は、合金中に存在する全てのRリッチ相の26%であった。\n\n(比較例2)\n\n実施例1と同様の組成に原料を配合し、実施例1と同様にして溶解およびSC法による鋳造を実施した。但し、鋳造ロールの肉厚は25mmとし、鋳造ロール表面の平均粗さはRzで10ミクロンとした。また合金薄片の平均厚さは0.22mmとした。目視観察では、鋳造ロール上の合金の一部に温度が若干高い部分が発生した。\n\n実施例1と同様の方法で求めたタンディッシュの溶湯が鋳造ロールに接触している位置での鋳造ロールの表面温度は80℃であった。\n\nまた、赤外線温度計でロールを離脱した合金薄片の平均の温度を測定したところ、670℃であった。また、ロールを離脱した合金薄片を収容する回収コンテナ内には、冷却水を流通させた仕切り板を設置した。回収コンテナ側面から内部に差込んだ熱電対で合金の温度変化を測定したところ、最高温度は660℃であり、600℃までの平均の冷却速度は35℃/分であった。\n\n得られた合金薄片を実施例1と同様に評価した結果、Rリッチ相は小枝状の高次のデンドライトを多量に含んでおり、アスペクト比が10以上かつその長軸方向がメタル表面に対して90±30°であるRリッチ相の面積率は、合金中に存在する全てのRリッチ相の23%であった。一方で、アスペクト比が10以上かつその長軸方向がメタル表面に対して30°以下または150°以上であるRリッチ相の面積率が、合金中に存在する全てのRリッチ相の54%であった。\n\n次に焼結磁石の実施例を説明する。\n\n【実施例2】\n\n実施例1で得られた合金薄片を公知の水素粉砕処理により粗粉砕し、得られた粗粉砕粉末に、ステアリン酸亜鉛粉末を0.07質量%添加し、ロッキングミキサーにより窒素雰囲気中で混合した後、ジェットミル装置で微粉砕した。ジェットミル粉砕時の雰囲気は、10000ppmの酸素を混合した窒素雰囲気中とした。得られた粉体の酸素濃度は5000ppmであった。得られた粉体を冷間埋め込み樹脂と混合、硬化、研磨して、粉体の断面をSEM-BEI観察し、粉体中でのRリッチ相の分散状態を調査した。その結果、Rリッチ相は主に主相から成る粒の表面に付着していた\n\n次に、得られた粉体を配向磁界1.5Tの磁場中において圧力1.0t/cm2でプレス成形し、該成形体を1060℃で4時間保持して焼結した。得られた焼結体の焼結密度は7.5g/cm3以上であり十分な大きさの密度となった。さらに、この焼結体をアルゴン雰囲気中、560℃で1時間熱処理し、焼結磁石を作製した。\n\nBHカーブトレーサーでこの焼結磁石の磁気特性を測定した結果を表1に示す。\n\n(比較例3)\n\n比較例1で得られた合金薄片を、実施例2と同様の方法で粉砕して微粉を得た。この際、実施例2と同様の方法で、粉体断面を観察し、Rリッチ相の多くが主相から分離してRリッチ相だけから構成された比較的小さな粒として存在していることを確認した。さらに実施例2と同様の成形、焼結の工程を経て、焼結磁石を作製した。\n\n本比較例3で作製した焼結磁石の磁気特性を、BHカーブトレーサーで測定した結果を表1に示す。\n\n(比較例4)\n\n比較例2で得られた合金薄片を、実施例2と同様の方法で粉砕して微粉を得た。この際、実施例2と同様の方法で、粉体断面を観察し、内部にRリッチ相が存在している粒の割合が、実施例2と比較して7倍程度もある事を確認した。さらに実施例2と同様の成形、焼結の工程を経て、焼結磁石を作製した。\n\n本比較例4で作製した焼結磁石の磁気特性を、BHカーブトレーサーで測定した結果を表1に示す。\n\n\n\n表1に示すように、比較例3では実施例2と比較して密度が低く、特性面でも磁化、保磁力が低い。この原因は、合金段階でのRリッチ相の分散が悪いため、粉砕工程においてRリッチ相が活性な小微粉体として粉砕機のサイクロンで分離されてTREが減少し易いことや、Rリッチ相の偏析が焼結性を低下させることから、焼結時に十分有効に機能しなかったためと推定できる。一方、比較例4でも比較例3ほどではないにしろ、同様の挙動を示しており、Rリッチ相の焼結への寄与が不十分であったものと推定できる。\n\n【産業上の利用可能性】\n\n本発明のR-T-B系永久磁石用原料合金によれば、合金中のRリッチ相を最大限有効活用できるため、本合金から製造した焼結磁石は、従来のものよりも優れた磁石特性を発現する。すなわち、Rリッチ相が本来の役割を十分に発揮するため、焼結磁石製造工程で微粉砕時の組成変動が少ない、酸素濃度の増加による磁気特性の低下がない、焼結密度の低下及び配向度の低下がないなど、従来の合金では得られなかった優れた効果を有する。また、上記原料合金を用いることにより、高磁気特性を有するR-T-B系永久磁石を得ることができる。\n\n本発明は、高性能の焼結磁石を必要とする種々の電子機器や電気機械などに好適に応用され得る。', '【技术领域】\n\n本发明涉及一种用于基于R-T-B基的永磁体的原料合金,更具体地涉及一种由带材铸造方法制造的R-T-B永磁体的原料合金薄片。本发明还涉及由基于R-T-B的永磁体的原料合金制成的R-T-B永磁体。\n\n发明背景\n\n基于R-T-B基永磁体,其具有永磁体中的最大磁能产品用于高清(硬盘),MRI(磁共振成像),各种电动机等的高特征。近年来,除了提高其耐热性之外,对市场节能的需求增加,包括汽车在内的电机应用的比例正在上升。\n\n这里,“RTB的永磁体”中的“R”主要被ND的一部分取代,其中其他稀土元素如Pr,Dy,并且是包括Y的稀土元素中的至少一种。 “T”是用其他过渡金属替换的Fe的一部分,例如CO和Ni。 “B”是硼,部分包括用C或N代以替代。由于主组件是ND,Fe,B,“R-T-B基永磁体”统称为“ND-Fe-B基磁体”或“R-Fe-B基磁体”。\n\n如本文所用,“RTB基永磁体”是一种类型的元素,例如Cu,Al,Ti,V,Cr,Ga,Mn,Nb,Ta,Mo,W,Ca,Sn,Zr和/或HF 。或者,它应包括组合添加的磁铁。众所周知,通过添加这些元件可以提高诸如磁性的特性。\n\nR-T-B基合金是贡献磁化作用的铁磁相2T.14B相是主阶段,并且具有低熔点的富含低熔点的非磁性和浓缩的低熔点R相。由于R-T-B基合金是活性金属,因此通常在真空或惰性气体中进行溶解和浇铸。另外,为了从基于铸造RTB的对准物质生产烧结磁体,合金质量研磨至约3μm(FSSS:Fischer副Sizer测量)以制备合金粉末,然后将磁场压制成型。通过压制成形获得的粉末成型体通过烧结炉在约1000至1100℃的高温下烧结。对于如此制备的烧结体,通常根据需要进行电镀,以提高耐腐蚀性。\n\n基于R-T-B的烧结磁铁R丰富相的阶段起到如下重要作用。\n\n1)R-富相的熔点是低,液相是烧结时的液相,磁体的致密化因此是磁化强度\n\n有助于改善。\n\n2)消除晶界的不均匀性,减少逆行核心位点并增强矫顽力。\n\n3)磁性绝缘阶段并增加矫顽力。\n\n因此,由于模塑磁体中R富型相位的分散状态差,因此重要的是,富型相位均匀地分散在模制磁体中,因为它是局部烧结破坏和磁性降低。。该R-T-B基烧结磁体中R富相的分布极大地受到作为原料的R-T-B基合金的组织的影响。\n\n作为铸造R-T-B基合金的方法,在实际过程中开发并使用下文中的条带铸造方法(以下简称为“SC方法”)。在SC方法中,将该合金的熔融金属供应到其中内部水冷的铜辊,通过快速固化合金熔融金属来铸造约0.1至1mm的填料。根据SC方法,由于合金的晶体结构小型化,因此可以生产具有细分散的组织的R-T-B基合金。如上所述,由于SC法施放的合金被精细地分散在内部R富相中,因此烧结后磁体中R的富相位的分散性变得良好,并且可以实现磁体改善的磁性特性。 (JP-A-5-222488和JP 5-295490))。\n\nSC法铸造的合金薄片也具有均匀性的优异组织。可以将组织的均匀性在晶粒尺寸和富型相的分散状态下进行比较。在由SC方法产生的合金薄片中,可以在合金薄片的辊侧(下文中称为模具表面侧)中产生寒冷晶体(例如易滴水),而是整体,均匀的组织可以获得。\n\n如上所述,由于SC法施放的RTB基合金被精细地分散在富型相中,并且组织均匀性优异,因此在产生烧结磁体时是最终磁体。R-富含相位均匀性并且可以提高磁特性。如上所述,SC方法铸造的R-T-B基复合物质具有优异的组织,用于制造烧结磁体。然而,随着磁体的特性得到改善,还需要提高原料合金组织,特别是R富相的阶段。\n\n首先,本发明人研究了铸造RTB基合金组织与氢粉碎和粉碎的行为之间的关系,均匀地控制烧结磁体的合金粉末的粒度。为了控制R-的分布状态丰富的阶段(日本专利公开号2003-188006)。并且,在合金中的模具表面侧产生的R-富型相的分散状态是极细区域(富含优异的相位区域),并且易于切割粉末的晶粒尺寸分布降低粉末的粒度分布,发现有必要宽泛扩大并减少富含优质的相位区域以改善磁体特性。\n\n根据JP-A-2003-188006中公开的富优异的富型相区域的合金,可以提高研磨稳定性和磁特性。然而,通过减小富含优选的相位区域,需要上述R的富型相的原始作用,并且期望由于合金结构的控制而导致的永磁体的高磁性表征。。\n\n本发明的一个目的是提供一种用于基于R-T-B基的永磁体的原料合金,其能够通过控制具有更微观尺度的合金中存在的富型相位来提供磁性特性改善。\n\n发明的描述\n\n本发明人发现,在更微观的尺度上观察到R-T-B基合金,并且已经发现R-Rich相的形状和磁性之间存在主要关系。也就是说,本发明如下。\n\n(1)r2T.14B加载薄板式RTB永磁体的含有柱状晶体的永磁体,富含硼和碳),并且在任何横截面观察到包括薄板的正面的合金组织中,纵横比为10或者更长时间\n\n用于RTB的永磁体的原料合金,其特征在于R富相的面积比为90±30°,其轴向到薄板表面,是所有R富含阶段的30%或更多合金。。\n\n(2)R相阶段的区域比为90±30°,其具有纵横比及其长轴方向为90±30°,是合金A中的所有R富集相的50%或更多如(1)的基于RTB的永磁体的原料合金,其特征在于:\n\n(3)R相相的面积比为90±30°,其与宽度的宽度比及其长轴方向为90±30°,薄板表面的宽度为70%或更多合金中存在的相对于RTB的永磁体的原料合金,其特征在于:\n\n(4)根据(1)至(3)的基于R-T-B基永磁体,其特征在于纵横比为20或更高。\n\n(5)r2T.14B加载薄板式RTB永磁体的含有柱状晶体的永磁体,富含硼和碳),并且在任何横截面观察到包括薄板的正面的合金组织中,纵横比为10或者更多,纵向方向是30°或更小或小于或等于薄板表面。用于RTB的永磁体的原料合金,其特征在于,富型相比的面积比为150°或更多,合金中存在的所有R富含阶段的50%或更少。\n\n(6)R富相位的面积比为30°或更小或150°以上,纵横比及其长轴方向为30°或更小或150°或更大,30%或更少根据(5)的基于RTB的永磁体的原料合金的合金中存在丰富的相阶段,其特征在于,其特征。\n\n(7)r2T.14B用于含有柱状晶体的薄板RTB永磁体的加载合金是含柱状晶体的硼和硼和碳),并且在任何横截面观察到的合金组织中,包括薄板的法线方向,\n\n宽高比为10或更大,其长轴方向为90±30°的薄板表面为90±30°,是合金中所有R的富相间的30%或更多,并且可以是富型相的面积比,其小于或等于30°或更小的纵向,纵向为10或更高,至少150°,是合金中存在的所有R富含相的50%或更少。未加工用于RTB永磁体的材料合金。\n\n(8)R-富型相的面积比为90±30°,为90±30°,其是纵横比及其长轴方向,是所有R的富集相中的50%或更多该合金,以及R-富相的面积比,其相对于10个或更多宽高比的薄板表面小于30°或更小或150°或更大,并且小于所有R的30% - 根据(7)的基于RTB的永磁体的原料合金中的阶段,其特征在于。\n\n(9)根据(1)至(8)的基于R-T-B基永磁原料合金,其特征在于通过带钢铸造方法制造。\n\n(10)根据(9)的R-T-B永磁体的原料合金,其特征在于平均厚度为0.10mm以上且0.50mm。\n\n(11)基于R-T-B基的永磁体,由上述(1)至(10)的R-T-B基合金制成。\n\n[简要描述;简介]\n\n图。图1是表示含有常规SC方法的稀土磁体合金薄片的横截面组织的图。\n\n图。图2是表示含有富含R的富阶的富相位相的稀土磁体合金薄片的横截面组织的视图,其具有由常规SC方法制造的高阶树突臂。\n\n图。图3是根据本发明的稀土磁体的合金火焰片段的横截面组织。\n\n图。图4是条形铸造方法的铸造装置的示意图。\n\n实施本发明的最佳方式\n\n在下文中,参照附图,根据本发明的R-T-B基永磁体的原料合金的实施例\n\n解释。\n\n首先,参考图1和图2。1和2。当通过SEM(扫描电子显微镜)观察薄ND-Fe-B合金(ND31.5质量%)铸造胶囊的横截面时,这些图是反射电子图像。图的左侧是合金的模具表面侧,合金的右侧。当通过SC法淬灭合金熔融金属的凝固时,用模具表面侧淬灭合金熔融金属并结晶。\n\n图1中的白色部分表示Nd富阶段(R是Nd,因此可以称为“Nd富相位”)。从图1中可以看出。在图1中,Nd富相位以池形式聚集。另一方面,在图2中,在树突中存在非常精细的ND阶段。\n\n为了从基于R-T-B的合金生产烧结磁体,需要压碎R-T-B基合金并压制以制备模制体。作为研磨R-T-B基合金的方法,首先优选通过储氢将R-T-B基合金精细粉碎。 R-T-B基合金大致通过储氢来截然磨削(粉碎)。在该R-T-B基合金的氢破碎步骤中,氢从富氢的相吸收,并成为膨胀和脆弱的氢化物。因此,在氢气破碎中,沿着R-富氢相引入细裂纹或从富R相开始。由于合金在随后的细粉碎步骤中被破坏,因此通过氢气破碎产生的大量细裂缝破裂,因此R-富相位的分散状态倾向于影响细磨效率和细粉形状。因此,我们观察到更加微观尺度的R-富相位,并且发现在富氢相和通过氢粉碎形成的细裂缝之间存在关系,甚至是磁性。\n\n从富泳池富型相位,如图1所示。如图1所示,在氢气破碎时径向形成细裂纹,同时,赫姆斯也脆化。因此,在随后的喷射铣削期间,富有池状R相与主相分离并非常精细地。这种非常精细的细粉末由富含这种R的相来由研磨过程中的组成波动引起,因为旋风分离的比例分离并且不能回收。此外,由于由富R相组成的细粉末非常有效,因此由于氧浓度的增加,需要导致磁性特性降低,因此需要加强该过程的安全措施,降低制造成本效率和成本增加。\n\n另一方面,如图2所示,如图2所示,在树突形状中存在的非常精细的富相位小于相邻的细枝状R回波相的富相对于一般烧结磁体的粒状粒度小于粒状晶粒尺寸。。因此,在喷射磨机增加后,在射流研磨后掺入细粉末内的细枝R相的速率。如上所述,R富相的相变为烧结时的液相,并有助于烧结。为此目的,富含R的相存在于每种细粉末的表面上,并且当烧结时,需要润湿细颗粒。然而,在粉末中的R富型相中不能预期这种效果,并且不能预期这种影响,并且不能充分有效,导致磁体的烧结密度降低。\n\n另外,如果枝晶中存在许多非常细的R富相,则树突的支化部分在很大程度上存在于粉末内,并且各向异性的取向是不同的。2T.14由于在粉末内部共存的B相的比例增加,所以得到的永磁体的取向程度降低。\n\n接下来,参考图1.参照图3,将描述由SC方法施放的根据本发明的Nd-Fe-B基合金(Nd31.5质量%)。图。图3示出了当通过SEM(扫描电子显微镜)观察根据本发明的ND-Fe-B基合金的板坯的横截面时,反射电子图像。\n\n从图1中可以看出。如图3所示,在横截面照片中出现的Nd富阶段,在厚度方向上以有限角度范围内延伸的分层(跛足)Nd富阶段的比例是显性的。是。虽然图2中所示的泳池形状。如图1所示,图1所示的富含富型的富相位略微存在,存在比例小。如果在氢粉碎后通过喷射研磨的合金通过喷射研磨,则组成波动,氧气和氮浓度的磁性,这是具有图1和图2的组织的合金中的问题。如图2所示,由于增加,磁性特性氧气和氮浓度可以解决诸如降低烧结密度的问题,烧结密度的降低或取向程度。因此,富裕的阶段最初是\n\n可以获得用于RTB的永磁体的最佳原料合金,其可以充分发挥成变的作用。\n\n同样在现有的R-T-B基合金中,如图1所示的组织。3部分存在。另外,通过控制浇铸固化时熔融金属或热处理可以通过热处理和日语控制熔融金属之后,可以通过控制冷却速度来控制R RTB基合金中的富氢相的分散状态。专利公开No.1-3在No.36949中描述。但是,即使如图1所示的组织。如图3所示,在现有的RTB基合金中,如上所述的R丰富的相位原始作用,如图1和图2所示。1和2占据大多数。不能完全施加。\n\n在下文中,将详细描述根据本发明的R-T-B永磁体的原料合金。\n\n(1)剥离铸造方法\n\n首先,参考图4.如图4所示,将描述通过用于R-T-B基永磁体的原料合金的带钢铸造方法铸造。图。图4示出了通过条带铸造方法铸造的装置的示意图。\n\n通常,由于其活性性质,使用耐火坩埚1在真空或惰性气体气氛中使用耐火坩埚1来溶解R-T-B基合金。溶解合金的熔融金属在1300至1500℃下保持预定时间,然后通过中间包2的整流机构或炉渣去除机构,其用炉渣去除机构到铸造旋转辊。它被提供给3。\n\n熔融金属的供应速率和旋转辊的旋转速度根据待获得的合金的厚度适当地控制。旋转辊的旋转速度优选地设定为约0.5至3m / s。铜或铜合金是合适的,因为浇铸辊的材料是良好的且易于获得导热性的。取决于旋转辊的材料和辊的表面状态,由于金属容易地附接到旋转辊的表面以进行铸造,因此在安装清洁装置时稳定铸造R-B合金的质量。在旋转辊上凝结的合金4从中间包的相对侧释放并被回收容器5回收。通过提供该回收装置,可以通过提供加热和冷却机构来控制R丰相组织的状态。\n\n当制备本发明的合金时,在铸造辊上冷却(这被称为“初级冷却”)并在回收容器内冷却(这被适当地称为“二次冷却”)。需要。\n\n初级冷却具体是在远离铸造辊至600-850°的时,使合金的温度为600-850.degree。将铸造辊离开时,合金的温度需要高于R-富型相的熔点。富含型相的熔点略微上下取决于组合物,但为600℃或更高。如果合金的温度远离铸造辊的富相位的熔点,则完成R富型相的凝结,因此如图2所示。另一方面,如果高于850℃,则富含R的相位聚集在池形式中,并且变成如图2所示的组织。1卷脱离后1。当远离铸轧时,更优选的合金温度范围为600-800℃。进一步优选的温度范围为640-750℃。然而,优选的温度范围是通过合金组合物的略微上下。\n\nR-富含相的分散状态和形状在很大程度上取决于TRE(总稀土含量)。例如,在低Tre和富氢相低的合金中,铸造辊释放时的合金温度的量趋于增加,富型相倾向于堵塞和池。变得加强。另一方面,在具有高TRE和富型相的合金中,铸造辊上的撕裂量增加了用高阶树突臂产生组织的趋势。因此,为了使合金温度远离铸轧,当合金的厚度小时,合金的厚度很小,如果TRE很大,则需要使其更厚。具体地,当TRE的标准是30wt%或更小时,优选的是,合金的平均厚度为0.10至0.30mm,以增加初级冷却程度。更优选地,它为0.15至0.27mm。更优选地,它为0.20至0.25mm。当TRE标准为30wt%至33wt%时,合金的优选平均厚度为0.25至0.35mm。更优选地,它为0.26至0.32mm。 33 Wt%的TRE标准\n\n在这种情况下,合金的优选平均厚度为0.28至0.50mm。更优选地,它为0.28至0.35mm。\n\n而且,通过适当地选择铸造辊的表面粗糙度,以及控制来自合金的铸造辊上的撕裂量也可以进行初级冷却程度。当作为TRE的量度的量度为30wt%或更小或33wt%或更多时,该方法特别有效。通过粗糙化铸造辊的表面粗糙度,可以比需要抑制伤害热量。在33wt%或更多的TRE中,通过粗糙化铸造辊的表面粗糙度,可以适当地抑制到铸造辊的铸造辊的高热传递。在这种情况下标准的表面粗糙度为20微米或更多的平均粗糙度Rz。在TRE30 WT%或更低的情况下,优选防止表面粗糙度为约20微米或更小,并防止R富型相的过度聚集,以免抑制辊上的第一冷却。然而,由于表面粗糙度也受到诸如辊表面材料的其他因素的影响,因此不限于上述数值。\n\n铸造辊表面温度影响合金熔融金属和辊的润湿性。如果温度太低,则合金熔融金属和辊的湿度变得更糟,并且倾向于提供两个接触的宏观的不均匀性。结果,在合金中发生温度分布,这导致来自上述优选铸辊释放时的合金温度的波动因子,并且变得难以产生具有特定形状的R富相位本发明。另一方面,如果温度太高,则合金熔融金属和辊的润湿性变得良好,并且可能发生局部烘烤。烘焙辊表面上的合金导致传热,部分中的润湿性波动,导致合金组织波动,因此难以产生具有本发明的特定形状的R富型相。另外,当合金合金的量较大时,稳定的操作变得困难,导致生产效率降低。因此,铸造辊表面温度为50至400℃,优选为100至300℃。更优选地,它是150-200℃这里所示的辊表面的温度是熔融金属位于熔融金属接触辊的部分中,并且直接测量难以直接嵌入铸造表面以下,或者中间包的下部或熔融金属触点可以从热电偶的测量值与部分的部分接触来计算。\n\n另一方面,例如,例如,分隔板安装在回收容器中,并且适当地设定隔板的间隔,并且隔板的内部通过惰性气体或诸如AR的水冷却。控制回收合金的冷却速率是有效的。当生产本发明的合金时,在回收容器中回收时,合金的温度为650-700℃,优选的冷却速率高达600℃。为3至30℃/ min,更优选3至20℃/它是一分钟。当回收到回收容器时的合金的温度为700至800℃时,优选的冷却速率高达600℃。为10至40℃/ min,更优选为10至30℃/ min 。当在回收容器中回收时合金的温度为800至850℃时,优选的冷却速率高达600℃。为20至50℃/ min,更优选为30至50℃/ min 。在这些温度范围内,当超过上限时,易于成为图2所示的组织。而且,当下限较小时,变得容易成为如图2所示的组织。\n\n本发明的合金限定了组织,并且制造方法不限于上述方法。\n\n本发明的合金薄片的厚度优选为0.1mm以上且0.5mm或更小。如果合金薄片的厚度薄于0.1mm,则凝固率过度增加,并且R-富相的分散变得太小。另外,如果合金薄片的厚度厚度小于0.5mm,则由于凝固率的降低,它导致富含R相的分散性的减少。\n\n(2)合金中富含R的相\n\n本发明是2T.14B加载薄板RTB永磁体的合金,含有柱状晶体和富含硼的相是硼或硼和碳)。然后,在包括薄板的正常方向的任何横截面中观察到的合金结构中,具有10或更多的长轴方向的R的富相位的面积比为90±30°在薄板表面上。合金中存在的所有R富含相30%或更多。结果,在烧结磁体制造过程中细磨过程中的组成波动小,由于氧气和氮浓度的增加,磁性特性没有降低,并且\n\n没有降低密度和取向程度,可以获得可以完全表现出R-T-B永久性的R-T-B永久磁体的最佳原料合金。此外,通过使用该原料合金,可以获得具有高磁性的R-T-B基永磁体。\n\n如果合金中R富型相的纵横比小于10,则R-富族的相是凝固的池形,并且如果这种R相相的比例增加,则磨削过程中的R富型相位或开销。构成波动增加。\n\n此外,即使纵横比为10或更大,在相对于薄板表面的90±30°的范围内,R-富相位可能是距离的细粒末端。这种R相阶段可以作为金属组织学上高阶树突中解释,但是在实际合金组织中鉴定原代树枝状和次级枝晶的个体差异的可能性高,几何定义和定义范围。\n\n结果,当纵横比为10或更大时,它相对于薄板表面的长轴方向为90±30°,它变为合金中存在的所有R富含阶段的30%或更少磁性变得显着。\n\n优选地,富型相的面积比为90±30°,其为90±30°,纵横比为10或更大,其纵向方向为50%以上它是它的合金。更优选地,R-富相的面积比为90±30°,其纵横比为10或更大,其长轴方向与薄板表面,是所有R的富集相中的70%或更多它是它的合金。\n\n更优选地,上述合金中的纵横比为20或更高。更优选地,纵横比在上述合金中是30或更高。\n\n或者,富型相的富相位的面积比为宽度比及其纵向向薄板表面的纵向比和其纵向的面积比为50%或更少它是它的合金。即使纵横比为10或更大,即使长轴方向为30°或更小或150°以上的R富型相对于薄板表面特别可能是间距是精细的高阶枝晶手臂。\n\n优选地,R富相的面积比,其小于或等于30°或更小,或150°或更大的纵向10或更多纵向的纵向,并且存在30%或更少的富集阶段这是合金。\n\n或者,R富阶段的R富相比为90±30°,其为90±30°,其是10或更大的纵横比,其长轴方向为30%或更多的富相位在合金中存在,以及R富相的面积比,其相对于薄板表面为30°或更小或150°或更大,富含富型相比的面积比为30°或更小或150 °或更多,为30°或更小或150°以上,并且小于合金中存在的R富型相的50%。它是。\n\n优选地,富型相的面积比为90±30°,其纵横比为90±30°,纵横比为10或更大,其长轴方向为50%以上在合金中,R富相的面积比为10°或更小或150°以上,相对于10°或更大的金属表面,其纵向的金属表面是存在的30%或更少在合金中它是。\n\n优选地,具有10或更多的纵横比或纵横比为20或更高的纵横比或纵横比为30或更大的R形相的优选为5%以上,优选10%以上的薄轴方面。\n\n图像分析由于合金的R-相位的纵横比,长轴方向到薄板表面,以及这种R富相的面积比具有高亮度与贝氏亮相。可以分析主阶段和通过设备富相位。例如,在随机选择的10个合金合金薄片的Bei以适当的放大率,每10张照片,在照片中富富相的总面积及其纵向的预定纵横比通过图像分析处理测量预定角度范围内的R富相的总面积。然后,在富型相位的富型相的总面积中,其中纵向方向处于每个图像获得的预定角度范围的预定角度范围,10张的R-富型相位的总面积被排除在外\n\n如果确定该值,则可以将其视为预定的R-富相的面积比。\n\n(3)在合金中2T.14B阶段\n\n根据本发明的薄板式R-T-B的永磁体的原料合金是铁磁相。2T.14B相是主阶段。 R.2T.14B相具有柱状形状和2T.14B柱状晶体优选地具有相对于薄板表面的90±30°的角度内的长轴。另外,优选的是,长轴的长度是薄板厚度尺寸的30%或更高,优选50%以上。此外,上述优选R.2T.14B柱状晶体在整个薄板中2T.14优选地,优选含有30%或更高,优选50%以上的柱状晶体。\n\n在这种情况下,2T.14B柱状晶体是指使用偏振显微镜使用磁性克尔效应观察的晶体取向。\n\n在下文中,将描述本发明的实施例和比较例。\n\n例1\n\n合金组合物是Nd:31.5重量%,B:1.00重量%,CO:1.0重量%,Al:0.30重量%,Cu:0.10重量%,金属钕,硼钨,钴,铝,成分将含铜和铁溶解在高频熔炉中,通过条带铸造方法浇铸熔融金属以制备合金薄片。\n\n铸造旋转辊的直径为300mm,材料是纯铜,厚度为50mm,内部被水冷,铸造时的辊的圆周速率为1.0 m / s,并且在1.0m / s的1.0m / s下生产0.27mm平均厚度的合金薄片。。此时,铸造辊表面的平均粗糙度为12微米,RZ。在视觉观察中,合金在铸造辊上均匀地乘以孵育,未观察到铸辊。\n\n另外,热电偶与铸辊表面的​​底部接触以测量铸造期间铸造辊的表面温度。此外,铸辊冷却水的水位和出口处的温度差,水温从铸辊排出,并从这些测量到铸造辊在中间包熔融金属的位置处与铸造辊接触表面温度计算为170℃。\n\n另外,测量用红外温度计用红外温度计分离的合金薄片的温度,为730°。在要容纳的回收装塞中,安装了循环冷却Ar气体的隔板。当从回收容器侧表面插入热电偶时,测量合金的温度变化时,最大温度为720℃,并且平均冷却速率高达600℃为22℃/ min。\n\n在嵌入并抛光10件得到的合金薄片之后,用扫描电子显微镜(SEM)以100次的放大率拍摄反射的电子束图像(BEI)。当拍摄的照片进入图像分析仪时,R相位相的面积比为90±30°,其纵横比为10或更大,其纵向与金属表面相同,都是合金的。它是R-富含阶段的80%。另外,R-富相对于金属表面具有20或更大且90±30°的富相位的面积比为合金中存在的所有R富相的65%。另一方面,富宽相对于金属表面为30°或更长度为30°或更长度为30°或更小或更长的R-富相位的面积比为30°或更小或150°以上。合金中的丰富阶段存在。\n\n比较例1\n\n将原料与实施例1中的相同的组合物中混合,并以与实施例1相同的方式进行溶解和SC法浇铸。然而,铸辊的厚度为90mm,铸造辊表面的平均粗糙度为7微米,RZ。合金薄片的平均厚度为0.35mm。在视觉观察中,铸造辊上的少量合金温度异常高,并且部分观察到烘焙现象。\n\n在以与实施例1中相同的方式获得的中包熔融金属与铸造辊接触的位置处的铸辊的表面温度为400℃。\n\n此外,测量用除去的退火合金薄片抽出的红外温度计的恼人合金薄片的温度为820℃。此外,在含有用辊的合金切片的回收容器中没有提供特殊的冷却机构。当通过从回收容器侧插入的热电偶测量合金的温度变化时,最高温度为810°C,平均冷却速率高达600°C\n\n它是6°C./min。\n\n由于评估所得合金薄片而没有如实施例1所获得的孵育,R-富相的面积比具有10或更高的纵横比,因为许多R富集阶段形成了游泳池。它是26合金中存在所有R丰富的相的百分比。\n\n比较例2.\n\n将原料与实施例1中的相同的组合物中混合,并以与实施例1相同的方式进行溶解和SC法浇铸。然而,铸辊的厚度为25mm,并且铸造辊表面的平均粗糙度为10微米,RZ。合金薄片的平均厚度为0.22mm。在视觉观察中,铸造辊上的一部分合金产生略高的温度。\n\n在以与实施例1中与实施例1中相同的方式获得的包裹熔融金属的位置处的铸造辊的表面温度为80℃。\n\n此外,当测量用红外温度计排出的合金薄片的平均温度时,为670℃。另外,将冷却水循环的分隔板安装在含有用辊的合金薄片的回收容器中安装在含有辊的合金薄片中。当通过从回收容器侧表面插入的热电偶测量合金的温度变化时,最高温度为660℃,平均冷却速率高达600℃为35℃/米。\n\n由于以与实施例1中相同的方式评估所获得的合金薄片,因此R-富相中含有大量的形式的高阶枝晶,并且纵横比为10或更长,长轴方向是在金属表面上。R相阶段的面积比为90±30°,是合金中所有R富含富型相的23%。另一方面,纵横比为10或更长且长轴方向相对于金属表面为30°或更小或更大的R-富轴的阶段的面积比为30°或更小或更大,富有54%合金中存在的阶段。有。\n\n接下来,将描述烧结磁体的实施例。\n\n例2.\n\n在实施例1中得到的合金薄片大致通过已知的氢研磨处理,将0.07质量%的锌硬脂酸锌粉末加入到所获得的粗粉粉末中,并通过摇动铣床通过摇摆混合器混合在氮气氛中,喷射铣削装置是碾磨。喷射研磨时的气氛在氮气氛中,其中混合了10000ppm的氧气。所得粉末的氧浓度为5000ppm。将所得粉末与冷嵌入式树脂混合,固化,抛光,并观察到粉末的横截面SEM-BEI,并研究了粉末中的R富型相的分散状态。结果,富含R的相位主要粘附到主阶段的晶粒表面上\n\n接下来,磁场中的压力1.0 t / cm,磁场为1.5 t2用压制成型,并将成体烧结在1060℃下4小时。所得烧结体的烧结密度为7.5g / cm3如上所述,它成为足够尺寸的密度。此外,将烧结体在560℃下在560℃下在氩气氛中在560℃下进行热处理1小时以制备烧结磁体。\n\n用BH曲线示踪测量该烧结磁体的磁性的结果如表1所示。\n\n(比较例3)\n\n在比较例1中获得的合金薄片通过与实施例2中的相同的方法粉碎,得到细粉。此时,以与实施例2中的方式相同,观察到粉末横截面,并且许多R富族相与主相分离,并作为仅由R富相组成的相对小的谷物存在。确认。此外,通过与实施例2中的相同的模制和烧结工艺产生烧结磁体。\n\n表1示出了用BH曲线示踪剂测量该比较例3中制造的烧结磁体的磁性特性的结果。\n\n比较例4.\n\n在比较例2中获得的合金薄片通过与实施例2中相同的方法粉碎,得到细粉末。此时,以与实施例2中相同的方式观察粉末横截面,并且与实施例2相比,其中R-富相位存在的颗粒的比例约为7倍。此外,通过与实施例2中的相同的模制和烧结工艺产生烧结磁体。\n\n表1示出了用BH曲线示踪剂测量在该比较例4中制造的烧结磁体的磁性特性的结果。\n\n\n\n如表1所示,在比较例3中,密度低于第二实施例的密度,即使在特征表面中,磁化和矫顽力也很低。因为这种原因在合金阶段的R相相中分散在R相相中,所以通过破碎机的旋风器作为磨削过程中的小旋风分离器的旋风分离器分离R形相,并且TRE很容易降低,并且R-丰富的阶段,因为隔离降低了烧结性,因此可以估计它在烧结时不起作用。另一方面,没有比较例4不是对比例3,并且示出了相同的行为,并且可以估计对R-富相位的烧结的贡献不足。\n\n【工业可用性】\n\n根据本发明的RTB的永磁体的原料合金,由于合金中的R富型相能有效地利用高效的效率,所以由本实施的烧结磁体表达磁体特性优于常规一个。。也就是说,由于R相阶段充分显示出原始作用,因此由于烧结磁体制造工艺中的氧浓度的组成和烧结密度增加,由于氧浓度的增加,磁性降低减少和取向存在优异的效果,不能用常规合金获得,例如没有降解。此外,通过使用上述原料合金,可以获得具有高磁性的R-T-B永磁体。\n\n本发明可以适当地应用于需要高性能烧结磁体的各种电子设备,电机等。');
INSERT INTO `os_patent_instruction_text` VALUES (13039, 22868, '【技術分野】\n\n【0001】\n\n本発明は、リング状永久磁石の変質、腐食が防止されていると共に安価で高性能のロータ用磁石体、更には希土類リング磁石を用いたロータ用磁石体、特に液中モータのロータ用磁石体に関する。\n\n【背景技術】\n\n【0002】\n\n特許文献1には、ポンプ用液中モータの全体構成(図10の軸方向断面図を参照。)、及びこの液中モータの回転子120の構成(図11の軸方向断面図を参照。)が開示されている。図10、11において101は回転子の主軸である。主軸101には電磁鋼鈑からなるロータヨーク102が焼き嵌め或いは圧入等の手段で固着され、ロータヨーク102の外周に永久磁石103が接着等により接合されている。ロータヨーク102の両端面102a,102b及び主軸101の外周に接してOリング105a,105b(ニトリルゴム製等。)が取り付けられている。Oリング105a,105bとロータヨーク102の両端面102a,102b及び永久磁石103の外周面(外周及び軸方向外側の面)を覆うように樹脂材104a,104b(ポリフェニレンサルファイド樹脂等)が射出成形されて固定されている。この樹脂材104a,104bがロータヨーク102の両端面102a,102b及び永久磁石103の外周を覆い、同時にOリング105a,105bを押えつけて形成されているため、永久磁石103及びロータヨーク102は樹脂材104a,104bで完全に密閉される。\n\nモータケーシング122には固定子121が圧入され、固定子121に巻かれた固定子巻線125にはケーブル126を介してモータ駆動電力が供給される。主軸101は軸受け123,124で支持される。モーターケーシング122は密封され、液封機構128により内部に液体Qが封入されている。その圧力は液圧調整機構128で調整される。\n\nしかし、モールド成形条件にもよるが、樹脂材104a,104bとOリング105a,105bとの相溶性が悪いと、両者の境界部分にピンホール等の微小欠陥が形成され、もってこの微小欠陥から液中モータに封入された液体或いはポンプ取扱い液が内部の永久磁石103まで侵入して接触、反応することにより永久磁石103を変質させたり腐食させるという問題がある。特に永久磁石103が希土類磁石の場合は耐食性の確保が必須である。\n\n【0003】\n\n特許文献2には、ヒートポンプ駆動エンジンの冷却装置における従動体の全体構成(図12の縦断面図を参照。)が開示されている。図12において、221はスピンドルであり、222はスピンドル221との間に間隔をおいて外嵌された筒状の従動磁石である。従動磁石222の内周面に筒状のインサート223(ステンレスパイプ等)が挿入されている。樹脂層は2回の射出成形により形成されている。水から保護するために従動磁石122表面を被覆する合成樹脂層224を射出成形して一次成形する。次に、これらを別の金型に設置して、インペラ部227からスピンドル外周の軸部225まで一体に合成樹脂を射出して二次成形する。もって残留応力が軽減されるという効果を得ている。\n\nしかし、このヒートポンプ駆動エンジンの冷却装置では2回の射出成形が必須であり、2種類の金型が必要となり、しかも一回目の射出成形で得られた成形体を別の金型に移し変えることが必要でコスト高になることから、1回の射出成形で実用に耐えるものが望まれていた。\n\n【0004】\n\n特許文献3には図13の断面図で示されるロータ310が開示されている。図13において、ロータ310は、ロータシャフト311とスペーサ312と永久磁石313及び樹脂モールド層314とから構成されている。図14はロータ310の成形金型321を示す断面図であり、下型(固定型)322と上型(移動型)323から構成されている。各永久磁石313は、位置決めピン324によりロータシャフト311の軸線方向への移動が規制される。これにより各永久磁石313とスペーサ312の間に樹脂は入り込まないようになっている。\n\nしかし、ロータ310では、射出成形の完了時点で形成された樹脂モールド層314から位置決めピン324が抜かれた孔330a,330b存在する。ロータ310をポンプ用液中モータとして使用すると、液中モータに封入された液体或いはポンプ取扱い液が前記位置決めピン324が抜かれた孔330a,330bから内部に侵入して永久磁石313を変質又は腐食させるので実用に耐えない。特に永久磁石313が希土類磁石の場合は腐食が顕著になる。\n\n【特許文献1】特開2003-259578号公報\n\n【特許文献2】特開平6-280780号公報\n\n【特許文献3】特開2002-361678号公報\n\n【発明の開示】\n\n【発明が解決しようとする課題】\n\n【0005】\n\n従って、本発明の目的は、リング状永久磁石の変質、腐食が防止されていると共に安価で高性能のロータ用磁石体、更には希土類リング磁石を用いたロータ用磁石体、特に液中モータのロータ用磁石体を提供することである。\n\n【課題を解決するための手段】\n\n【0006】\n\n上記目的を達成するために、本発明のロータ用磁石体は、少なくとも内周面又は外周面に複数個の磁極を有するリング状永久磁石と、前記リング状永久磁石の内周面又は外周面に固着されたリング状ヨークと、前記リング状永久磁石又はリング状ヨークの少なくとも一方の端面に固着された樹脂製のスペーサとを有し、前記リング状永久磁石及び前記ヨークは樹脂層により被覆されていると共に、前記樹脂製のスペーサと前記樹脂層とが接合されていることを特徴とする。\n\n【0007】\n\n本発明のロータ用磁石体は、前記樹脂層を構成する樹脂が前記樹脂製のスペーサと相溶性があり、もってモールド成形により前記樹脂製のスペーサと前記樹脂層とが溶着されていることを特徴とする。\n\nこのように、本発明のロータ用磁石体は、リング状永久磁石及びリング状ヨークの露呈表面の全面が1回のモールド成形により樹脂で被覆されるので安価である。かつ樹脂製スペーサと樹脂層との境界が溶着されてピンホールレスになっているので、前記リング状永久磁石が希土類磁石であっても良好な耐食性を付与することができる。\n\n【0008】\n\n前記リング状永久磁石が極異方性を有する希土類リング磁石である場合に、良好な耐食性と共に高い磁気性能を得られるので有用である。\n\n【0009】\n\n前記リング状永久磁石がラジアル異方性を有する希土類リング磁石である場合に、良好な耐食性と共に高い磁気性能を得られるので有用である。\n\n【0010】\n\n前記リング状永久磁石が径2極異方性を有する希土類リング磁石である場合に、良好な耐食性と共に高い磁気性能を得られるので有用である。\n\n【発明の効果】\n\n【0011】\n\n本発明によれば、リング状永久磁石とこのリング状永久磁石の内周面又は外周面に固着されたリング状ヨークの露呈表面を樹脂で被覆すると共に、前記リング状ヨークの端面に配設された樹脂製スペーサと前記樹脂層とが接合されているのでこの樹脂層の内部には水等の液体が浸入せず、もってリング状永久磁石及びリング状ヨークの変質、腐食が抑制される。また1回のモールド成形で樹脂層が形成されるので低コストのロータ用磁石体を得ることができる。\n\n【発明を実施するための最良の形態】\n\n【0012】\n\n本発明のロータ用磁石体に用いるリング状永久磁石としては、ボンド磁石、鋳造磁石又は温間据え込み磁石でもよいが、高いモータ性能を得るために焼結磁石が好ましい。具体的には異方性のフェライト焼結磁石でもよいが、異方性の希土類焼結磁石(RCo5系焼結磁石、R2Co17系焼結磁石又はR2Fe14Bを主相とするR-Fe-B系焼結磁石、但しRはYを含む希土類元素の1種又は2種以上である。)が好ましい。なお、リング状永久磁石はモータに要求されるロータ用磁石体の磁気性能、コスト及び寸法によりセグメント状の永久磁石片を貼着してリング状に形成したもので代替できる場合がある。\n\n前記リング状永久磁石が異方性のNd-Fe-B系焼結リング磁石の場合、特に限定されないが、内径:4〜93mm、外径:8〜100mm、軸方向長さ:3〜40mm、内周面又は外周面の磁極数:2〜48極のものが有用である。\n\n【0013】\n\n本発明のロータ用磁石体に用いるリング状ヨークは通常バックヨークとも呼ばれる。特に限定されないが、磁石の外周面に設ける場合には内径:44〜100mm、磁石の内周面に設ける場合には外径:4〜93mm、軸方向長さ:3〜40mmのものが有用である。\n\nリング状ヨークは短絡磁束を抑制しつつ所望の閉磁路を形成するために、鉄、鋼等の強磁性材料で形成されるが、例えばマルテンサイト系ステンレス鋼などの高透磁率材料で形成するのが好ましい。\n\n【0014】\n\n本発明のロータ用磁石体に用いるスペーサの数及び形状は特に限定されない。例えば、円柱状のスペーサでは2個又は3個以上とし、リング状のスペーサでは1個又は2個程度でよい。これはモールド成形用金型内にインサートされたリング状永久磁石及びリング状ヨークのどちらかの下側端面に前記スペーサを配設することにより、インサートされた前記リング状永久磁石又はリング状ヨークの下側端面と金型底面との間に所定の空隙を形成せしめ、その空隙にモールド成形により流動状態の樹脂を均一に充填させるためである。前記スペーサの一端を前記リング状ヨークの下側端面に設けた凹部に嵌装後、このリング状ヨークとリング状永久磁石の組立体をモールド成形用金型内へセットすると生産性が向上するので好ましい。更に、前記スペーサを円柱形状とし、かつその一端部を前記リング状ヨークに嵌装すると共に、他端部を前記被覆樹脂層から突出させると生産性が向上するので好ましい。\n\n前記スペーサはリング状永久磁石の下側端面に配設してもよいが、リング状ヨークの下側端面に配設した方がリング状永久磁石の表面に樹脂層が均一厚みで被覆されるので耐食性の信頼性向上の点から好ましい。\n\n前記スペーサは、リサイクル性を重視する場合は熱可塑性樹脂製とし、より厳しい耐熱性(耐食性)を重視する場合は熱硬化性樹脂製とするのが好ましい。\n\n【0015】\n\n樹脂層は、樹脂製スペーサの表面部分に相溶して空孔や微小な隙間(ピンホール)等が形成されていないことが必須である。このために、樹脂製スペーサと相溶性のある熱可塑性樹脂又は熱硬化性樹脂で形成する必要があり、樹脂製スペーサと被覆樹脂層とを同一樹脂で形成するのが好ましい。\n\n熱可塑性樹脂としては、例えば、ポリフェニレンサルファイド(PPS)、ポリアミド(PA)、ポリエチレンテレフタレート(PET)、ポリエチレン(PE)、ポリプロピレン(PP)、ポリテトラフロオロエチレン(PTFE)などのフッ素樹脂、ポリエーテルニトリル(PEN)、又はポリエーテルエーテルケトン(PEEK)等を使用できる。被覆樹脂層と接触する水等の液体は通常極性物質なので、これらの熱可塑性樹脂のうちで、吸水性の低い(吸水率が0.1質量%未満)、PPS、PET、PE、又はPP等の無極性の熱可塑性樹脂が好ましく、特にPPSが好ましい。熱硬化性樹脂としてはエポキシ樹脂又はフェノール樹脂等が挙げられ、室温硬化型の液状のエポキシ樹脂を用いてもよい。\n\n被覆樹脂層には、耐液体性(耐水性)を損なわない範囲で、酸化防止剤、滑剤、可塑剤、帯電防止剤、着色剤又はフィラー等のうちの1種又は2種以上が0.1〜30質量%添加されていてもよい。このような添加物としては、例えば、t-ブチルヒドロキシトルエン(BHT)、トリスノニルフェニルフォスファイト(TNP)(酸化防止剤)、ステアリン酸、流動パラフィン(滑剤)、ジオクチルフタレート、ジオクチルアジペート(可塑剤)、ポリオキシエチレンアルキルアミン(帯電防止剤)、チタニウムオキサイド、フタロシアニン系顔料(着色剤)、又は炭酸カルシウム、タルク、ガラス繊維(フィラー)が挙げられる。\n\n被覆樹脂層の厚さは0.5〜2mmの範囲にあることが好ましい。これは樹脂被覆層の厚さが0.5mm未満では耐液体性(耐水性)が低下してリング状永久磁石が短期間で腐食されて実用に耐えなくなり、厚さが2mm超ではリング状永久磁石から発して固定子の電機子巻線に鎖交する有効磁束量が減少してモータ性能が低下するからである。前記巻線に鎖交する有効磁束量を増加させて磁気性能を高めるために、リング状永久磁石の磁極面に形成された樹脂層の厚みはリング状ヨークの周囲に形成された樹脂層の厚さよりも薄くするのが好ましい。\n\n【0016】\n\n本発明で使用するモールド成形方法は特に限定されないが、射出成形法、真空注型成形法等が有用である。\n\n【0017】\n\n以下本発明の詳細を図面により説明する。\n\n図1は、本発明の第1の実施の形態に係わるロータ用磁石体の断面図である。図2はモールド成形に供するヨーク付磁石5の分解斜視図である。\n\n図1のロータ用磁石体8は、N極とS極が円周方向に交互に現出するように表面に複数個の磁極(図示を省略)を有するリング状の永久磁石1と、例えば接着剤(図示を省略)を介してその内周面に固着されたバックヨーク2と、その端面に設けられた複数(図では4個)の保持穴2bに嵌装された円柱状(丸棒状)のスペーサ4と、これらを覆う被覆樹脂層3で構成されている。\n\n図1のロータ用磁石体8は永久磁石1の外周側に樹脂層3及び空隙(図示省略)を介して固定子側の電機子コイル(図示省略)が配設される。\n\n【0018】\n\n上記のロータ用磁石体は、例えば次の工程に従って製造される。まず、図2に示すように、リング状の永久磁石1と、端面に複数の保持穴2bを有するリング状のバックヨーク2と、保持穴2bに嵌装される丸棒状(円柱状)で樹脂製のスペーサ4を準備し、各保持穴2bにスペーサ4の一端部が嵌入されたバックヨーク2を永久磁石1の内周面に固着することにより、予備磁石体5が作製される。次いで、図3に示すように、上金型11と下金型12からなる金型10の成形空間13内に、予備磁石体5がセットされる。このことにより、予備磁石体5の一方の端面からスペーサ4が突出しているので、予備磁石体5の周囲にはその露呈表面全面に亘って空隙が形成される。次いで、ゲート14から樹脂を主体とする加熱溶融物が所定圧力で射出注入され、この注入された溶融樹脂が冷却·固化した後、得られた射出成形体を金型10から取り出すことにより、図1に示すロータ用磁石体が得られる。被覆樹脂層3を形成する熱可塑性樹脂は、スペーサ4を形成する熱可塑性樹脂と相溶性のある樹脂で形成されているので、スペーサ4の表面は加熱溶融された樹脂と相溶するから、被覆樹脂層3とスペーサ4との間に空孔や隙間は形成されず、もって樹脂被覆層3は十分な耐液体性(耐水性)を維持し、リング状永久磁石の変質又は腐食を抑制し、保護層としての機能を果たすことができる。\n\n【0019】\n\n図4は、本発明のロータ用磁石体を用いたポンプ用液中モータの全体構成を示す軸方向断面図である。この液中モータの回転子の主軸31には図1のロータ用磁石体が固着されている。バックヨーク2と永久磁石1は樹脂層3で被覆され、バックヨークに設けたスペーサ4の側面は樹脂層3と相溶して一体化されているので、液体Q´が浸入することはない。この主軸31はモーター内で軸受23,24によって支持される。モータケーシング22には固定子20が圧入され、固定子20に巻かれた固定子巻線25には駆動電力を供給するためのケーブル26が接続されている。モーターケーシング22は密封され、液封機構28により内部に液体Q´が封入されている。回転子の周囲は液体Q´で満たされている。その圧力は液圧調整機構27で調整される。駆動電力が供給されると固定子から力を受けて回転子が回転する。\n\n【0020】\n\n本発明のロータ用磁石体は、上記の構造に限らず次のような構造とすることができる。\n\n図5は本発明の第2の実施の形態に係わるロータ用磁石体の断面図、図6は本発明の第3の実施の形態に係わるロータ用磁石体の断面図、図7は本発明の第4の実施の形態に係わるロータ用磁石体の断面図であり、図8は本発明の第5の実施の形態に係わるロータ用磁石体の断面図であり、図1と同一機能部分は同一の参照符号で示し、その詳細な説明を省略する。\n\n【0021】\n\n図5に示すロータ用磁石体は、被覆樹脂層3の一方の端面にフィン6を設けた構造を有する。図5のロータ用磁石体を液中モータとして使用した場合、該ロータ用磁石体はモー\n\nタケーシング(図示省略)内に配設されると共に、モータケーシング内部に液体(例えば、プロピレングリコール水溶液)が密封される。もって、フィン6の回転により固定子の巻線(図示省略)の渦電流損による発熱を効率よく冷却し、かつ液温の均一化により液圧を安定化させるという効果を得ることができる。\n\n【0022】\n\n図6に示すロータ用磁石体は、バックヨーク2の端面に突設されたスペーサ4の先端部を被覆樹脂層3から突出させた構造を有する。このロータ用磁石体によれば、スペーサ4の先端部を金型に嵌め込むことが可能となり、金型内にセットされた予備磁石体が射出成形圧で傾いたりすることが防止されるので、被覆樹脂層3の厚さを均一にすることができる。なお、必要に応じて、このロータ磁石体がモータに組み込まれる前に、スペーサ4の被覆樹脂層3から突出している部分を除去するのが好ましい。\n\n【0023】\n\n図7に示すロータ用磁石体は、バックヨーク2の一方の側に他の部分よりも大径のフランジ部2cを形成し、永久磁石1をバックヨーク2に嵌め込むことにより、両者を一体化した構造を有する。このバックヨーク2を使用することにより、接着剤を用いずとも、永久磁石1とバックヨーク2を機械的に結合できるとともに、フランジ部2cが形成されているので、永久磁石1の軸方向位置を正確に設定することができる。\n\n【0024】\n\n図8に示すロータ用磁石体は、リング状永久磁石1の外周側にバックヨーク2を配置した以外は図1のロータ用磁石体と同一構成のものである。図8のロータ用磁石体は永久磁石1の内周側に樹脂層3及び空隙(図示省略)を介して固定子側の電機子コイル(図示省略)が配設される。\n\n【実施例】\n\n【0025】\n\n以下、本発明を下記の実施例により詳細に説明するが、それらの実施例により本発明が限定されるものではない。\n\n(実施例1)\n\n対称8極の極異方性Nd-Fe-B系焼結リング磁石(外径:30mm、内径:24mm、軸方向長さ:20mmであり、化成処理及びアミノ変性エポキシ系カチオン電着コーティング(膜厚20μm)が施してある。)の内周面に、嫌気性接着剤(ヘンケルロックタイト社製、商品名:ロックタイトAV138)を塗布し、マルテンサイト系ステンレス鋼(SUS403製)からなるバックヨークの端面にPPS樹脂からなる4本の丸棒状のスペーサを嵌め込み、上記Nd-Fe-B系焼結リング磁石の内周面にこのバックヨークを接着することにより、図2に示す予備成形体を作製した。この予備成形体を図3に示すように金型内にセットした後、ペレット状のPPS樹脂を310℃の温度に加熱して溶融後、射出成型用金型内に射出注入し、冷却固化することにより、PPS樹脂で被覆された(被覆層のうち最も薄い外周面の被覆厚さ:1mm)、図1に示すロータ用磁石体が得られた。次に、前記ロータ用磁石体の極異方性Nd-Fe-B系焼結リング磁石の異方性付与方向に沿って室温、着磁磁場強度:1592kA/mの条件で対称8極着磁を行った。着磁後にロータ用磁石体の総磁束量φoを室温で測定した。φoはロータ用磁石体をサーチコイルに設置したときの磁束量とサーチコイルから外して遠ざけたときの磁束量の差から求めた。表面磁束密度Boは、前記ロータ用磁石体の外周面において周方向の表面磁束密度分布をガウスメーターで測定したときのピーク値である。こうして得られたロータ用磁石体を100個準備し、80℃の温水に200時間を超えて浸漬試験を行った結果、いずれのロータ用磁石体も被覆樹脂層に膨れは認められず正常な外観であった。浸漬試験後にロータ用磁石体の総磁束量φo´を室温で測定した。更に前記浸漬試験後のロータ用磁石体の樹脂層を剥離したところ、リング磁石に錆は観察されなかった。これらの浸漬試験後のロータ用磁石体の磁束量低下率Δφを測定した結果を表1に示す。磁束量低下率Δφ(%)は、浸漬試験前(着磁後)の総磁束量φoに対して浸漬試験後の総磁束量φo´が低下した割合を百分率で次式のように示したものである。\n\nΔφ=((φo-φo´)/φo)×100\n\n実施例1〜3では永久磁石を使用する上で問題とならない範囲にΔφが抑制された。なお、径が同じであればラジアル異方性Nd-Fe-B系焼結リング磁石よりも極異方性Nd-Fe-B系焼結リング磁石や径2極異方性Nd-Fe-B系焼結リング磁石の方がロータ用磁石体の樹脂層表面におけるBoが高くなった。したがって、磁力を高くしてモータのトルクを高める必要がある場合には、極異方性のNd-Fe-B系焼結リング磁石を備えるロータ用磁石を用いた。\n\n【0026】\n\n(実施例2)\n\n対称8極のラジアル異方性Nd-Fe-B系焼結リング磁石(外径:30mm、内径:24mm、軸方向長さ:20mmであり、化成処理及びアミノ変性エポキシ系カチオン電着コーティング(膜厚20μm)が施してある。)の内周面に、嫌気性接着剤(ヘンケルロックタイト社製、商品名:ロックタイトAV138)を塗布し、マルテンサイト系ステンレス鋼(SUS403製)からなるバックヨークの端面にPPS樹脂からなる4本の丸棒状のスペーサを嵌め込み、上記Nd-Fe-B系焼結リング磁石の内周面にこのバックヨークを接着することにより、図2に示す予備成形体を作製した。この予備成形体を図3に示すように金型内にセットした後、ペレット状のPPS樹脂を310℃の温度に加熱して溶融後、射出成型用金型内に射出注入し、冷却固化することにより、PPS樹脂で被覆された(被覆層のうち最も薄い外周面の被覆厚さ:1mm)、図1に示すロータ用磁石体が得られた。次に、前記ロータ用磁石体のラジアル異方性Nd-Fe-B系焼結リング磁石の異方性付与方向に沿って室温、着磁磁場強度:1592kA/mの条件で対称8極着磁を行った。着磁後にロータ用磁石体の総磁束量φoを室温で測定した。表面磁束密度Boは、前記ロータ用磁石体の外周面において周方向の表面磁束密度分布をガウスメーターで測定したときのピーク値である。こうして得られたロータ用磁石体を100個準備し、80℃の温水に200時間を越えて浸漬試験を行った結果、いずれのロータ用磁石体も被覆樹脂層に膨れは認められず正常な外観であった。浸漬試験後にロータ用磁石体の総磁束量φo´を室温で測定した。更に前記浸漬試験後のロータ用磁石体の樹脂層を剥離したところ、リング磁石に錆は観察されなかった。更にこれらの浸漬試験後のロータ用磁石体の磁束量低下率Δφを測定した結果を表1に示す。\n\n【0027】\n\n(実施例3)\n\n径2極異方性Nd-Fe-B系焼結リング磁石(外径:30mm、内径:24mm、軸方向長さ:20mmであり、化成処理及びアミノ変性エポキシ系カチオン電着コーティング(膜厚20μm)が施してある。)の内周面に、嫌気性接着剤(ヘンケルロックタイト社製、商品名:ロックタイトAV138)を塗布し、マルテンサイト系ステンレス鋼(SUS403製)からなるバックヨークの端面にPPS樹脂からなる4本の丸棒状のスペーサを嵌め込み、上記Nd-Fe-B系焼結リング磁石の内周面にこのバックヨークを接着することにより、図2に示す予備成形体を作製した。この予備成形体を図3に示すように金型内にセットした後、ペレット状のPPS樹脂を310℃の温度に加熱して溶融後、射出成型用金型内に射出注入し、冷却固化することにより、PPS樹脂で被覆された(被覆層のうち最も薄い外周面の被覆厚さ:1mm)、図1に示すロータ用磁石体が得られた。次に、前記ロータ用磁石体の径2極異方性Nd-Fe-B系焼結リング磁石の異方性付与方向に沿って室温、着磁磁場強度:1592kA/mの条件で径2極着磁を行った。着磁後にロータ用磁石体の総磁束量φoを室温で測定した。表面磁束密度Boは、前記ロータ用磁石体の外周面において周方向の表面磁束密度分布をガウスメーターで測定したときのピーク値である。こうして得られたロータ用磁石体を100個準備し、80℃の温水に200時間を越えて浸漬試験を行った結果、いずれのロータ用磁石体も被覆樹脂層に膨れは認められず正常な外観であった。浸漬試験後にロータ用磁石体の総磁束量φo´を室温で測定した。更に前記浸漬試験後のロータ用磁石体の樹脂層を剥離したところ、リング磁石に錆は観察されなかった。更にこれらの浸漬試験後のロータ用磁石体の磁束量低下率Δφを測定した結果を表1に示す。\n\n【0028】\n\n(比較例1)\n\n図9に示すように、対称8極の極異方性Nd-Fe-B系焼結リング磁石1(外径:30mm、内径:24mm、軸方向長さ:20mm)の内周面に、嫌気性接着剤(ヘンケルロックタイト社製、商品名:ロックタイトAV138)を塗布し、マルテンサイト系ステンレス鋼(SUS403)からなるバックヨーク2を接着し、得られた予備磁石体を金型内(図示省略)にセットした後、ペレット状のPPS樹脂を310℃の温度で溶融してから金型内に注入し、冷却固化した後金型から取り出した。この1回目の射出成形により形成された被覆樹脂層は3aである。この成形体を別の金型(図示省略)にセットしてから、二回目の射出成形を行うことにより、PPS樹脂で被覆された(被覆樹脂層3bのうち最も薄い外周面の被覆厚さ:1mm)、図9に示すロータ用磁石体が得られた。以降は実施例1と同様にして着磁した。着磁後にロータ用磁石体の総磁束量φoを室温で測定した。表面磁束密度Boは、前記ロータ用磁石体の外周面において周方向の表面磁束密度分布をガウスメーターで測定したときのピーク値である。こうして得られたロータ用磁石体を合計100個準備し、80℃の温水に浸漬した結果、浸漬時間が50時間を経過した時にいずれのロータ用磁石体樹脂被覆層にも膨れが発生した。この膨れは液中モータでロータ用磁石体を回転させる際に固定子とロータ間のギャップを狭くして回転に支障を来たす原因となる。浸漬試験後にロータ用磁石体の総磁束量φo´を室温で測定した。また、これらの樹脂被覆層を剥離したところ、永久磁石の表面に錆の発生が認められた。更にこれらの浸漬試験後のロータ用磁石体の磁束量低下率Δφを測定した結果を表1に示す。実施例1〜3に対して、比較例1はNd-Fe-B系焼結リング磁石に錆びが発生して、Δφが許容できない値となった。\n\n【0029】\n\n【表1】\n\n\n\n【0030】\n\n(実施例4)\n\n対称8極の極異方性Nd-Fe-B系焼結リング磁石(外径:60mm、内径:48mm、軸方向長さ:20mmであり、化成処理及びアミノ変性エポキシ系カチオン電着コーティング(膜厚20μm)が施してある。)の外周面に、嫌気性接着剤(ヘンケルロックタイト社製、商品名:ロックタイトAV138)を塗布し、マルテンサイト系ステンレス鋼(SUS403製)からなるバックヨークの端面にPPS樹脂からなる4本の丸棒状のスペーサを嵌め込み、上記Nd-Fe-B系焼結リング磁石の外周面にこのバックヨークを接着することにより、予備成形体を作製した。この予備成形体を金型内(図示省略)にセットした後、ペレット状のPPS樹脂を310℃の温度に加熱して溶融後、射出成型用金型内に射出注入し、冷却固化することにより、PPS樹脂で被覆された(被覆層のうち最も薄い外周面の被覆厚さ:1mm)、図8に示すロータ用磁石体が得られた。次に、前記ロータ用磁石体の極異方性Nd-Fe-B系焼結リング磁石の異方性付与方向に沿って室温、着磁磁場強度:1592kA/mの条件で対称8極着磁を行った。着磁後にロータ用磁石体の総磁束量φoを室温で測定した。表面磁束密度Boは、前記ロータ用磁石体の内周面において周方向の表面磁束密度分布をガウスメーターで測定したときのピーク値である。こうして得られたロータ用磁石体を100個準備し、80℃の温水に200時間を越えて浸漬試験を行った結果、いずれのロータ用磁石体も被覆樹脂層に膨れは認められず正常な外観であった。浸漬試験後にロータ用磁石体の総磁束量φo´を室温で測定した。更に前記浸漬試験後のロータ用磁石体の樹脂層を剥離したところ、\n\nリング磁石に錆は観察されなかった。更にこれらの浸漬試験後のロータ用磁石体の磁束量低下率Δφを測定した結果を表2に示す。実施例4〜6では永久磁石を使用する上で問題とならない範囲にΔφが抑制された。なお、径が同じであればラジアル異方性Nd-Fe-B系焼結リング磁石よりも極異方性Nd-Fe-B系焼結リング磁石や径2極異方性Nd-Fe-B系焼結リング磁石の方がロータ用磁石体の樹脂層表面におけるBoが高くなった。したがって、磁力を高くしてモータのトルクを高める必要がある場合には、極異方性のNd-Fe-B系焼結リング磁石を備えるロータ用磁石を用いた。\n\n【0031】\n\n(実施例5)\n\n対称8極のラジアル異方性Nd-Fe-B系焼結リング磁石(外径:60mm、内径:48mm、軸方向長さ:20mmであり、化成処理及びアミノ変性エポキシ系カチオン電着コーティング(膜厚20μm)が施してある。)の外周面に、嫌気性接着剤(ヘンケルロックタイト社製、商品名:ロックタイトAV138)を塗布し、マルテンサイト系ステンレス鋼(SUS403製)からなるバックヨークの端面にPPS樹脂からなる4本の丸棒状のスペーサを嵌め込み、上記Nd-Fe-B系焼結リング磁石の外周面にこのバックヨークを接着することにより、予備成形体を作製した。この予備成形体を金型内(図示省略)にセットした後、ペレット状のPPS樹脂を310℃の温度に加熱して溶融後、射出成型用金型内に射出注入し、冷却固化することにより、PPS樹脂で被覆された(被覆層のうち最も薄い外周面の被覆厚さ:1mm)、図8に示すロータ用磁石体が得られた。次に、前記ロータ用磁石体のラジアル異方性Nd-Fe-B系焼結リング磁石の異方性付与方向に沿って室温、着磁磁場強度:1592kA/mの条件で対称8極着磁を行った。着磁後にロータ用磁石体の総磁束量φoを室温で測定した。表面磁束密度Boは、前記ロータ用磁石体の内周面において周方向の表面磁束密度分布をガウスメーターで測定したときのピーク値である。こうして得られたロータ用磁石体を100個準備し、80℃の温水に200時間を越えて浸漬試験を行った結果、いずれのロータ用磁石体も被覆樹脂層に膨れは認められず正常な外観であった。浸漬試験後にロータ用磁石体の総磁束量φo´を室温で測定した。更に前記浸漬試験後のロータ用磁石体の樹脂層を剥離したところ、リング磁石に錆は観察されなかった。更にこれらの浸漬試験後のロータ用磁石体の磁束量低下率Δφを測定した結果を表2に示す。\n\n【0032】\n\n(実施例6)\n\n径2極異方性Nd-Fe-B系焼結リング磁石(外径:60mm、内径:48mm、軸方向長さ:20mmであり、化成処理及びアミノ変性エポキシ系カチオン電着コーティング(膜厚20μm)が施してある。)の外周面に、嫌気性接着剤(ヘンケルロックタイト社製、商品名:ロックタイトAV138)を塗布し、マルテンサイト系ステンレス鋼(SUS403製)からなるバックヨークの端面にPPS樹脂からなる4本の丸棒状のスペーサを嵌め込み、上記Nd-Fe-B系焼結リング磁石の外周面にこのバックヨークを接着することにより、予備成形体を作製した。この予備成形体を金型内(図示省略)にセットした後、ペレット状のPPS樹脂を310℃の温度に加熱して溶融後、射出成型用金型内に射出注入し、冷却固化することにより、PPS樹脂で被覆された(被覆層のうち最も薄い外周面の被覆厚さ:1mm)、図8に示すロータ用磁石体が得られた。次に、前記ロータ用磁石体の径2極異方性Nd-Fe-B系焼結リング磁石の異方性付与方向に沿って室温、着磁磁場強度:1592kA/mの条件で径2極着磁を行った。着磁後にロータ用磁石体の総磁束量φoを室温で測定した。表面磁束密度Boは、前記ロータ用磁石体の内周面において周方向の表面磁束密度分布をガウスメーターで測定したときのピーク値である。こうして得られたロータ用磁石体を100個準備し、80℃の温水に200時間を越えて浸漬試験を行った結果、いずれのロータ用磁石体も被覆樹脂層に膨れは認められず正常な外観であった。浸漬試験後にロータ用磁石体の総磁束量φo´を室温で測定した。更に前記浸漬試験後のロータ用磁石体の樹脂層を剥離したところ、リング磁石に錆は観察されなかった。更にこれらの浸漬試験後のロータ用磁石体の磁束量低下率Δφを測定した結果を表2に示す。\n\n【0033】\n\n(比較例2)\n\n対称8極の極異方性Nd-Fe-B系焼結リング磁石(外径:60mm、内径:48mm、軸方向長さ:20mm)の外周面に、嫌気性接着剤(ヘンケルロックタイト社製、商品名:ロックタイトAV138)を塗布し、マルテンサイト系ステンレス鋼(SUS403)からなるバックヨークを接着し、得られた予備磁石体を金型内(図示省略)にセットした後、ペレット状のPPS樹脂を310℃の温度で溶融してから金型内に注入し、冷却固化した後金型から取り出した。この1回目の射出成形により形成された被覆樹脂層は予備成形体の一部を被覆した。この成形体を別の金型(図示省略)にセットしてから、二回目の射出成形を行うことにより、PPS樹脂で被覆された(最も薄い内周面の被覆厚さ:1mm)、ロータ用磁石体が得られた。以降は実施例5と同様にして着磁した。着磁後にロータ用磁石体の総磁束量φoを室温で測定した。表面磁束密度Boは、前記ロータ用磁石体の内周面において周方向の表面磁束密度分布をガウスメーターで測定したときのピーク値である。こうして得られたロータ用磁石体を合計100個準備し、80℃の温水に浸漬した結果、浸漬時間が50時間を経過した時にいずれのロータ用磁石体樹脂被覆層にも膨れが発生した。浸漬試験後にロータ用磁石体の総磁束量φo´を室温で測定した。またこれらの樹脂被覆層を剥離したところ、永久磁石の表面に錆の発生が認められた。更にこれらの浸漬試験後のロータ用磁石体の磁束量低下率Δφを測定した結果を表2に示す。実施例4〜6に対して、比較例2はNd-Fe-B系焼結リング磁石に錆びが発生して、Δφが許容できない値となった。\n\n【0034】\n\n【表2】\n\n\n\n【0035】\n\n(実施例7)\n\n実施例1のロータ用磁石体を主軸に固着し、巻線を設けた固定子やケーブルを圧入したモータケーシング内に一方の軸受と前記主軸と他方の軸受を順に挿入して、モータケーシングを密封して、図4のポンプ用液中モータを構成した。液封機構と液圧調整機構によりモータケーシング内部にプロピレングリコール水溶液(室温)を注入し、ロータ用磁石体とモータケーシングの間に充填した。この状態でケーブルを介して巻線に駆動電流を供給し、ロータ用磁石及び主軸を回転させた。回転開始から200時間後にポンプ用液中モータを停止し、内部から主軸に固着したロータ用磁石体を取り出した。ロータ用磁石体表面の樹脂被覆層に膨れは認められず正常な外観であった。樹脂被覆層を剥離したところ、リング磁石に錆は観察されなかった。\n\n【0036】\n\n(比較例3)\n\n比較例1のロータ用磁石体を主軸に固着し、実施例1と同様にして図4のポンプ用液中モータを構成した。液封機構と液圧調整機構によりモータケーシング内部にプロピレングリコール水溶液(室温)を注入し、ロータ用磁石体とモータケーシングの間に充填した。この状態でケーブルを介して巻線に駆動電流を供給し、ロータ用磁石体及び主軸を回転させた。回転開始から50時間後にポンプ用液中モータを停止し、内部から主軸に固着したロータ用磁石体を取り出した。ロータ用磁石体表面の樹脂被覆層には膨れが発生した。樹\n\n脂被覆層を剥離したところ、リング磁石に錆の発生が観察された。\n\n【図面の簡単な説明】\n\n【0037】\n\n【図1】本発明の第1の実施の形態に係わるロータ用磁石体の断面図である。\n\n【図2】予備磁石体の分解斜視図である。\n\n【図3】図1のロータ用磁石体の成形装置の断面図である。\n\n【図4】本発明の液中モータを示す断面図である。\n\n【図5】本発明の第2の実施の形態に係わるロータ用磁石体の断面図である。\n\n【図6】本発明の第3の実施の形態に係わるロータ用磁石体の断面図である。\n\n【図7】本発明の第4の実施の形態に係わるロータ用磁石体の断面図である。\n\n【図8】本発明の第5の実施の形態に係わるロータ用磁石体の断面図である。\n\n【図9】従来のロータ用磁石体の断面図である。\n\n【図10】従来の液中モータを示す断面図である。\n\n【図11】従来のロータ用磁石体の断面図である。\n\n【図12】従来のロータ用磁石体の断面図である。\n\n【図13】従来のロータ用磁石体の断面図である。\n\n【図14】従来のロータ用磁石体の成形金型の断面図である。\n\n【符号の説明】\n\n【0038】\n\n1:永久磁石、2:バックヨーク、2b:保持穴、2c:フランジ部、\n\n3:被覆樹脂層、4:スペーサ、5:予備磁石体、6:フィン、\n\n20:固定子、22:モータケーシング、23:軸受、24:軸受、\n\n25:固定子巻線、26:ケーブル、27:液圧調整機構、28:液封機構、\n\n31:主軸。', '【技术领域】\n\n【0001】\n\n本发明已经改变或腐蚀环形永磁体,以及具有低成本和高性能的转子的磁体,以及使用稀土环磁体的转子磁体,特别是电动机的转子磁体在液体中。它涉及。\n\n发明背景\n\n【0002】\n\n专利文献1(参见图10的轴向剖视图)和在该液体中的电动机的转子120的构造(参见图11的轴向剖视图)和电动机转子120的构造在该液体中。公开了。在图1和2中在图101,101中是转子的主轴。由电磁钢板制成的转子轭102通过熔化配合或压配合固定到主轴101,并且永磁体103通过粘附等通过粘附等结合到转子轭102的外周。 O形环105a和105b(由丁腈橡胶制造等)附接到两个端面102a和102b的外周和转子轭102的主轴101。树脂材料104a,104b(聚苯硫醚树脂等)是注塑成型的,以覆盖O形环105a和105b的外周表面102a和102b,以及转子轭102(外周和轴向外侧)永磁体103。它是固定的。由于树脂材料104a和104b覆盖转子轭102的外周和永磁体103的外周,并且同时,永磁体103和转子磁轭102是树脂材料104a,104b完全是密封。\n\n电动机壳体122是压配合的,并且电动机驱动功率通过电缆126向定子121缠绕在定子121周围的定子绕组125。主轴101由轴承123,124支撑。电动机壳体122被密封,并且液体Q由液体密封机构128内部封闭。通过液压调节机构128调节压力。\n\n然而,尽管取决于模塑条件,但是,如果树脂材料104a和104b和O形环105a和105b之间的相容性差,则在两个边界部分处形成诸如针孔的微缺陷,因此在那里的这种微缺陷形成是一种问题:在电动机或泵处理液体侵入内部永磁体103并使液体侵入内部永磁体103并使永磁体103降低或腐蚀。特别地,当永磁体103是稀土磁铁时,固定耐腐蚀性是必需的。\n\n【0003】\n\n专利文献2公开了在热泵驱动发动机的冷却装置中的从动体的整体构造(参见图12的纵向剖视图)。在图1中。如图12所示,附图标记221表示主轴,222是圆柱形从动磁体,其与主轴221间隔开。圆柱形插入件223(不锈钢管等)插入从动磁体222的内周表面上。树脂层由两个注塑成型形成。为了防止水,覆盖从动磁体122的表面的合成树脂层224是注塑和线性模制的。接下来,它们安装在另一个模具中,并且合成树脂从叶轮227一体地发射到主轴外周和二次成型的轴部分225。它具有降低残余应力的效果。\n\n然而,在热泵驱动发动机的冷却装置中,两个注塑成型是必需的,并且需要两种类型的模具,并且通过第一注射成型获得的模制体被转移到另一个模具中。由于它是必要的,因此它变成了昂贵,希望能够承受一种注塑成型的实用性。\n\n【0004】\n\n专利文献3公开了在图1的横截面图中所示的转子310。在图1中。如图13所示,转子310由转子轴311,间隔件312,永磁体313和树脂模具层314组成。图。图14是表示转子310的模制模具321的剖视图,并且由下模(固定型)322和上模(移动式)323组成。每个永磁体313由定位销324在转子轴311的轴向上调节。结果,树脂未在永磁体313和间隔件312之间进入。\n\n然而,在转子310中,孔330a和330b,其中定位销324从形成在注射成型完成时形成的树脂模制层314。当转子310用作泵流体中的电动机时,液体或泵处理溶液中的流体中的液体或泵处理液体从孔330A,330B中侵入了永磁体313,定位销324断开连接劣化或腐蚀。所以我无法实际使用。特别地,在稀土磁铁的情况下,腐蚀变得显着。\n\n专利文献1:APHN 2003-259578\n\n[专利文献2]日本专利申请公开号6-280780\n\n[专利文献3]日本专利申请公开No.2002-361678\n\n发明的描述\n\n本发明要解决的问题\n\n【0005】\n\n因此,本发明的目的是防止环状永磁体和腐蚀的改变,以及使用稀土环磁体的低成本,高性能转子磁体和转子磁体,尤其是在液体中电动机是提供转子磁体。\n\n[解决问题的手段]\n\n【0006】\n\n为了实现上述目的,本发明的转子磁体是至少一个环形永磁体,在内周表面或外周表面上具有多个磁极,以及环的内周表面- 状永磁体或外周表面。环形磁轭和环形永磁体或固定在环形磁轭的至少一个端面的树脂间隔物,以及环状永磁体和轭架是通过树脂层或者,由树脂和树脂层制成的间隔物键合。\n\n【0007】\n\n在本发明的转子磁体中,构成树脂层的树脂与由树脂制成的间隔件相容,其特征在于由树脂和树脂层制成的间隔物通过模制焊接。它将是。\n\n如上所述,本发明的转子磁体是廉价的,因为环形永磁体的整个表面和环形轭的暴露表面通过模制涂覆树脂。由于树脂间隔物和树脂层之间的边界是焊接和销钉,因此即使环形永磁体是稀土磁铁,也可以赋予良好的耐腐蚀性。\n\n【0008】\n\n当环形永磁体是具有杆的稀土环磁体时,由于具有良好的耐腐蚀性,因此可以获得高磁性性能。\n\n【0009】\n\n当环状永磁体是具有径向各向异性的稀土环磁体时,获得高磁性性能,具有良好的耐腐蚀性,这是有用的。\n\n【0010】\n\n当环形永磁体是具有直径偶极性的稀土环磁体时,它是有用的,因为可以具有良好的耐腐蚀性来获得高磁性性能。\n\n【发明效果】\n\n【0011】\n\n根据本发明,环形永磁体的暴露表面和环形永磁体的内周表面被树脂覆盖,并且设置在环形轭的端面上。自树脂间隔物和树脂层连接,诸如水的液体不会穿透树脂层内,并且即使环形永磁体和环形磁轭被抑制,抑制腐蚀。另外,由于树脂层通过一个模制成型形成,因此可以获得低成本转子磁体。\n\n实施本发明的最佳方式\n\n【0012】\n\n用于本发明的转子磁体的环形永磁体可以是粘合磁体,铸造磁铁或暖安装磁体,但是烧结磁体是优选的,以获得高电动机性能。具体地,它可以是各向异性铁氧体烧结磁体,但是各向异性稀土烧结磁体(RCO5基烧结磁铁,R2CO.17估价磁铁或r2Fe.14基于R-Fe-B的烧结磁体,其是主阶段B,其中R是含有Y的稀土元素中的一种或多种。首选。环形永磁体可以通过通过电动机所需的转子磁体的磁性性能,成本和尺寸粘附分段状永磁件来代替。\n\n环状永磁体是各向异性ND-Fe-B型烧结环磁体,但没有特别限制,内径:4至93mm,外径:8至100mm,轴长:3至40mm ,内周面或外周表面的极数:2至48杆是有用的。\n\n【0013】\n\n用于本发明的转子磁体的环形磁轭通常被称为后轭。虽然没有特别限制,但是当设置在磁体的外周表面上时,外径为44至100mm,外径为4至93mm,轴长:3至40mm时是有用的,当设置在内周上时是有用的磁铁的表面。是。\n\n环形轭由铁磁材料形成,例如铁,钢,例如高渗透性材料,例如马氏体不锈钢,用于在抑制短路磁通量的同时形成所需的闭磁路。优选。\n\n【0014】\n\n用于本发明的转子磁体的间隔物的数量和形状没有特别限制。例如,两个或更多个圆柱形垫片应约为一个或多个环形垫片。通过将间隔物布置在环状永磁体的下端面上和插入模具成型模具和环形轭中的环形轭上插入这一点。在下端面上形成预定的气隙模具底表面和气隙通过模制均匀地填充流化的树脂。当间隔物的一端装配到设置在环形磁轭的下端面上的凹槽上时,环形磁轭的组件和环形永磁体设定为模具成型模具,所以生产率是改善。优选。此外,间隔物是圆柱形状,并且一个端部安装在环形轭中,并且如果另一端从涂覆的树脂层突出,则提高生产率,这是优选的。\n\n间隔物可以设置在环形永磁体的下端面上,但是设置在环形磁轭的下端面上,因此树脂层涂有均匀的环状永磁体的厚度。从改善耐腐蚀性可靠性的观点来看,优选。\n\n优选地由热塑性树脂和更紧密的耐热性(耐腐蚀)制成的间隔物优选在强调可回收性时由热固性树脂制成。\n\n【0015】\n\n必须与树脂间隔物的表面部分相容的树脂层形成流动器或微小间隙(针孔)等。因此,有必要形成与树脂间隔物相容的热塑性树脂或热固性树脂,并且优选形成具有相同树脂的树脂间隔物和涂覆的树脂层。\n\n热塑性树脂包括,例如,聚苯亚硫醚(PPS),聚酰胺(PA),聚对苯二甲酸乙二醇酯(PET),聚乙烯(PE),聚丙烯(PP),聚四氟乙烯(PTFE),聚醚,聚醚,聚醚。腈(笔)或可以使用聚醚醚酮(PEEK)。由于与涂覆树脂层接触的水之类的液体通常是极性物质,因此这些热塑性树脂是低吸收剂(吸水率0.1质量%),PPS,PET,PE或PP等。性热塑性树脂是优选的是,特别优选PPS。热固性树脂的实例包括环氧树脂或酚醛树脂等,可以使用室温可固化液体环氧树脂。\n\n涂覆树脂层中的一种或多种抗氧化剂,润滑剂,增塑剂,抗静电剂,着色剂或填料等,一种或多种抗氧化剂,增塑剂,抗静电剂,着色剂或填料等为0.1至30.可以加入质量%。这些添加剂包括,例如,叔丁基羟基甲苯(BHT),三苯基苯基膦酸盐(TNP)(抗氧化剂),硬脂酸,流动石蜡(润滑剂),邻苯二甲酸二辛酯,己二酸二辛酯(增塑剂(氧化钛),氧化钛,酞菁基颜料(着色剂),可列举出碳酸钙,滑石,玻璃纤维(填料)。\n\n涂覆的树脂层的厚度优选在0.5至2mm的范围内。这小于0.5mm的树脂涂层厚度,并且流体电阻(防水)降低,并且在短时间内腐蚀环形永磁体以防止实际使用,并且环形永久性磁铁厚度超过2毫米。这是因为从定子的电枢绕组间歇的有效磁通量增加并且电动机性能降低。为了增加绕组上互锁的有效磁通量的量以提高磁性性能,在环形永磁体的磁极表面上形成的树脂层的厚度是在环周围形成的树脂层的厚度- 轭轭。优选薄于相同。\n\n【0016】\n\n本发明中使用的模塑方法没有特别限制,但注射成型方法,真空铸造方法等是有用的。\n\n【0017】\n\n在下文中,将参考附图描述本发明的细节。\n\n图。图1是根据本发明第一实施例的转子的磁体的横截面图。图。图2是磁铁5的分解透视图,其具有用于模制的轭。\n\n图1的转子磁体8.图1是具有多个磁极(省略省略)的环形永磁体1,使得N极和S极在圆周方向上交替地移动,例如,粘合力。圆柱形(圆形条形)装配到后轭2,固定在内周表面上,并且经由试剂(未示出)设置在内圆周表面上的多个(图中的图4中)。间隔件4和覆盖这些涂覆的树脂层3。\n\n图1的转子磁体8包括:图1的磁体8通过树脂层3和空隙(未示出)设置在永磁体1的外周侧和在定子侧上的电枢线圈(未示出)。\n\n【0018】\n\n例如,根据下一步骤制造上述转子磁体。首先,如图2所示。如图2所示,环形永磁体1和具有多个保持孔2b的环形背轭2和装配在保持孔2b中的圆形条形(圆柱形状)是树脂。该制备间隔物5,并且背轭2插入每个保持孔2b中的间隔物4的一个端部的后轭2装配到永磁体1的内周表面上,由此制造前导码体5。接下来,如图2所示。如图3所示,备用磁体5设置在由上模具11和下模12制成的模具10的模制空间13中。结果,由于间隔物4从预备磁体5的一端面突出,所以围绕序列主体5周围的暴露表面的整个表面形成气隙。接下来,从预定压力注入主要由树脂组成的加热熔体,并将所得熔融树脂冷却并固化,然后从模具10中除去所获得的注塑体10.为1表示的转子磁体。获得。由于形成涂覆的树脂层3的热塑性树脂由与形成隔离物4的热塑性树脂相容的树脂形成,因此间隔件4的表面与加热的熔化树脂相容,因此在涂层之间没有形成孔和间隙。树脂层3和间隔物4,树脂涂层3保持足够的流体阻力(防水),抑制环形永磁体的劣化或腐蚀,它可以用作保护层。\n\n【0019】\n\n图4显示了本发明使用转子磁铁图3是表示泵液中的电动机的整体结构的轴向剖视图。图1的转子磁体。在该液体中固定到电动机转子的主轴31。背轭2和永磁体1涂覆有树脂层3,并且设置在后轭中的间隔件4的侧表面与树脂层3集成,使得液体Q\'不会穿透。主轴31由电动机中的轴承23,24支撑。定子20压配合在电动机壳体22中,并且用于供应驱动力的电缆26连接到缠绕在定子20周围的定子绕组25。电动机壳体22被密封,并且液体Q\'封闭在液体密封机构28内。转子的周边填充有液体Q\'。通过液压调节机构27调节压力。当提供驱动电力时,转子通过从定子接收电力而旋转。\n\n【0020】\n\n本发明的转子磁体不限于上述结构,并且可以是以下结构。\n\n图。图5是根据本发明第二实施例的转子的磁体的横截面图。图6是根据第三实施例的转子的磁体的横截面图。本发明,图7是本发明的本发明。图7是关于第四实施例的转子的磁体的剖视图。图8是本发明第五实施例的磁体的剖视图,和图1中的相同的功能部分。图1中的附图标记的相同,并且将省略其详细描述。\n\n【0021】\n\n图2中所示的转子磁体具有图5所示的结构,其中翅片6设置在涂覆的树脂层3的一端面上。当图1中的转子的磁体混合时。如图5所示,在液体中用作电动机,转子的磁体是\n\n或者,在电动机壳体(未示出)内密封液体(例如,丙二醇水溶液)。同时,翅片6的旋转可以有效地冷却由于定子(未示出)的绕组(未示出)的涡流损耗而有效地冷却发热,以及通过穿着液体均匀稳定液压的效果温度。\n\n【0022】\n\n图2中所示的转子磁体。图6所示的结构具有从后轭2的端面突出的间隔物4的尖端部分从涂层树脂层3突出。根据该转子磁体,间隔件4的尖端可以装配到模具中,并且防止模具中的预备磁体与注塑压力倾斜。可以制造涂覆的树脂层3的厚度制服。如果需要,优选在转子磁体主体结合到电动机之前从间隔物4的涂覆树脂层3突出的部分。\n\n【0023】\n\n图2中所示的转子磁体。图7中所示的凸缘部分2c的凸缘部分2c直径比背轭2的一侧的另一个部分更大,并且通过将永磁体1装配到后轭2来整合两者。具有结构。通过使用后轭2,即使使用粘合剂,即使使用粘合剂,可以机械地耦合永磁体1和后轭2,并且形成凸缘部分2c,因此形成永磁体1的轴向位置。它可以设置正确。\n\n【0024】\n\n图8所示的转子磁体如图8所示的转子磁体与图8的转子磁体相同。除了背轭2设置在环形永磁体1的外周侧之外。图1的转子磁体。图8的磁体通过树脂层3和气隙(未示出)设置在永磁体1的内周侧和在定子侧上的电枢线圈(未示出)。\n\n【例子】\n\n【0025】\n\n在下文中,将通过以下实施例更详细地描述本发明,但是本发明不受这些实施例的限制。\n\n(例1)\n\n对称8管道(外径:30 mm,轴长:20 mm,轴长:20 mm,轴长:20 mm,轴长:20mm,化学转化处理和化学转化处理和化学转化处理和氨基化学处理和氨基化学处理和氨基化学处理和氨基化学处理和氨基化学处理和化学转化处理和氨基改性的施加环氧阳离子电沉积涂层20μm(厚)。厌氧粘合剂(Henkel岩石紧,产品名称:锁紧拧紧AV 138)应用于内周表面),后轭的端面由马氏体不锈钢组成钢(由SUS403制造)另外,通过将其粘附到基于ND-Fe-B的烧结环磁体的内周表面,由PPS树脂制成的四个圆形杆状隔离物连接到内周表面上基于ND-Fe-B的烧结环磁体。图2.生产预制件。这是预制件图3.将其放入模具中的模具后,加热沉淀的PPS树脂在310℃的温度下加热至310℃。并且在熔化之后,将其注入注塑成型模具并通过冷却用PPS树脂注入注塑成型模具和涂层。凝固。用于图1所示的转子的磁体。获得了1。接下来,室温,磁磁磁畴强度在转子磁铁的极离散Nd-Fe-B基烧结环磁体的各向异性施加方向上,我做了一个对称的8极化磁磁。在磁化之后在室温下测量用于转子的磁体的总磁通量φo。当转子磁体主体安装在搜索线圈中并从搜索线圈移除时,从磁通量之间的差异确定φO。当通过用于转子的磁体的外周表面的高斯计来测量圆周方向上的表面磁通密度分布时,表面磁通密度Bo是峰值。作为制备100种转子磁铁的结果,浸渍试验在80℃的温水中以超过200小时进行。浸泡试验后转子磁体的总磁通量室内温度它是通过的此外,当剥离浸渍试验后转子的磁体的树脂层剥离时,在环磁体中没有观察到锈。表1示出了在这些浸没试验之后测量转子的磁体磁通量Δφ的磁通量Δφ的结果。磁通量降低率Δφ(%)表示浸渍试验(后磁化)之前浸渍试验之后的总磁通量φO\'的比例,下降试验φO\'的比例显示为以下百分比它是。\n\nΔφ=((φo-φo\')/φo)×100\n\n在实施例1至3中,在不成为使用永磁体内的问题的范围内抑制Δφ。另外,如果直径是相同的,则杆状Nd-Fe-B基烧结环磁体和直径双极性不矛盾的Nd-Fe-B比径向各向异性Nd-Fe-B基烧结环磁铁。烧结扎带环磁体在转子磁铁的树脂层的表面上具有更高的Bo。因此,当有必要增加磁力并增加电动机的扭矩时,使用设置有杆无序的ND-Fe-B基烧结环磁体的转子磁体。\n\n【0026】\n\n(例2)\n\n对称的8-管道径向各向异性Nd-Fe-B型烧结环磁铁(外径:30 mm,内径:24 mm,轴长:20mm,化学处理和氨基改性环氧阳离子电沉积涂层(膜20μm(厚)应用。厌氧粘合剂(鹰嘴岩石紧,产品名称:锁紧拧紧AV 138)应用于内周表面),后者由马氏体不锈钢(由SUS403制造)组成的后轭的端面另外,通过将其粘附到基于ND-Fe-B的烧结环磁体的内周表面,由PPS树脂制成的四个圆形杆状间隔物连接到ND-Fe-B的内周表面上基于烧结环磁铁。图2.生产预制件。这是预制件图3.将其放入模具中的模具后,加热沉淀的PPS树脂在310℃的温度下加热至310℃。并且在熔化之后,将其注入注塑成型模具并通过冷却用PPS树脂注入注塑成型模具和涂层。凝固。用于图1所示的转子的磁体。获得了1。接下来,室温,磁磁磁畴强度在转子磁铁的径向各向异性ND-Fe-B型烧结环磁体的各向异性赋予方向,对称的8偏振磁铁。在磁化之后在室温下测量用于转子的磁体的总磁通量φo。当通过用于转子的磁体的外周表面的高斯计来测量圆周方向上的表面磁通密度分布时,表面磁通密度Bo是峰值。制备100个转子磁铁的结果,并且在80℃的温水中在温水中进行浸渍试验,在涂覆的树脂层中也没有观察到任何转子磁体,并且正常出现。在浸渍测试之后,在室温下测量转子磁体φO\'的总磁通量。此外,当剥离浸渍试验后转子的磁体的树脂层剥离时,在环磁体中没有观察到锈。此外,表1示出了在这些浸没试验之后测量转子的磁体的磁通量Δφ的结果。\n\n【0027】\n\n(例3)\n\n直径2极 - 极电动ND-FE-B型烧结环磁铁(外径:30毫米,内径:24 mm,轴长:20mm,化学转化处理和氨基改性环氧阳离子电沉积涂层(20μm厚度)(有氧粘合剂(由Henkel Lock Teading制造,产品名称:锁定拧紧AV 138))应用于内周表面),而PPS在由马氏体不锈钢组成的后轭的端面(由SUS403制造) )通过在Nd-Fe-B基烧结环磁体的内周表面上粘合到树脂制成的四个圆形杆状间隔物,通过将该后轭粘合,图2.生产预制件。这是预制件图3.将其放入模具中的模具后,加热沉淀的PPS树脂在310℃的温度下加热至310℃。并且在熔化之后,将其注入注塑成型模具并通过冷却用PPS树脂注入注塑成型模具和涂层。凝固。用于图1所示的转子的磁体。获得了1。接下来,转子烧结环磁体的直径沿着基于各向异性的,磁磁磁场强度用作磁磁磁场强度直径的直径:1592ka / m。我磁化。在磁化之后在室温下测量用于转子的磁体的总磁通量φo。当通过用于转子的磁体的外周表面的高斯计来测量圆周方向上的表面磁通密度分布时,表面磁通密度Bo是峰值。制备100个转子磁铁的结果,并且在80℃的温水中在温水中进行浸渍试验,在涂覆的树脂层中也没有观察到任何转子磁体,并且正常出现。在浸渍测试之后,在室温下测量转子磁体φO\'的总磁通量。此外,当剥离浸渍试验后转子的磁体的树脂层剥离时,在环磁体中没有观察到锈。此外,表1示出了在这些浸没试验之后测量转子的磁体的磁通量Δφ的结果。\n\n【0028】\n\n比较例1\n\n如图1所示。如图9所示,对称的8极杆状Nd-Fe-B基烧结环磁体1(外径:30mm,内径:24mm,轴向长度:20mm)是厌氧。粘合剂(通过Henkel Lock紧密制造,产品名称:锁定紧缩AV 138)施加,粘附由马氏体不锈钢(SUS403)制成的后轭2,并且在设定后,由此产生的初步磁体主体在模具(未示出)中,颗粒状PPS树脂在310℃的温度下熔化,然后注入模具中并从冷却的补救液中取出。由第一注射成型形成的涂覆的树脂层是3A。将模塑主体设定为另一模具(未示出),然后通过执行第二注射成型(涂覆的树脂层3b的最轻的外周表面的冷却厚度:1mm),成为转子的磁体,然后用PPS树脂涂覆如图1所示。获得了图9。此后,以与实施例1相同的方式磁化。在磁化之后在室温下测量用于转子的磁体的总磁通量φo。当通过用于转子的磁体的外周表面的高斯计来测量圆周方向上的表面磁通密度分布时,表面磁通密度Bo是峰值。由100℃得到100杆磁铁的结果,在80℃下将所得物浸入温水中,并且当浸渍时间经过50小时时,肿胀也发生在任何转子的磁体树脂涂层中。这种膨胀导致定子和转子之间的间隙在旋转液体马达中时使定子和转子之间的旋转。在浸渍测试之后,在室温下测量转子磁体φO\'的总磁通量。另外,当剥离这些树脂涂层时,在永磁体的表面上观察到锈。此外,表1示出了在这些浸没试验之后测量转子的磁体的磁通量Δφ的结果。对于实施例1至3,比较例1在ND-Fe-B基烧结环磁体中生锈,ΔΦ变成了不可接受的值。\n\n【0029】\n\n【表格1】\n\n\n\n【0030】\n\n(例4)\n\n对称8极杆状ND-Fe-B型烧结环磁铁(外径:60 mm,内径:48 mm,轴长:20mm,化学转化处理和氨基改性环氧阳离子电沉积涂层(膜20μm (厚)是应用的。一种厌氧粘合剂(由Henkel Lock紧密制造,产品名称:锁定拧紧AV 138)应用于马氏体不锈钢的后轭端面(由SUS403制造)a预制件通过装配由PPS树脂制成的四个圆形杆状垫片,并将其粘附到ND-Fe-B基烧结环磁体的外周表面上。在将预制件设定为模具(未示出)之后,将沉淀的PPS树脂加热至310℃的温度,并且在熔化之后,将其注入注塑模具中,并进行冷却。,PPS。,PPS用PPS树脂(涂层最薄的外周表面的涂层厚度的涂层厚度为1mm)树脂,并且获得图8所示的转子磁体。接下来,室温,磁磁磁畴强度在转子磁铁的极离散Nd-Fe-B基烧结环磁体的各向异性施加方向上,我做了一个对称的8极化磁磁。在磁化之后在室温下测量用于转子的磁体的总磁通量φo。当圆周方向上的表面磁通密度分布在磁体主体的用于转子的内周表面处测量时,表面磁通密度Bo是峰值。制备100个转子磁铁的结果,并且在80℃的温水中在温水中进行浸渍试验,在涂覆的树脂层中也没有观察到任何转子磁体,并且正常出现。在浸渍测试之后,在室温下测量转子磁体φO\'的总磁通量。此外,当浸没后,当浸没后转子的磁体的树脂层被剥离,\n\n环磁铁中没有观察到锈。此外,表2示出了在这些浸没试验之后测量转子的磁体的磁通量Δφ的磁通量ΔΦ的结果。在实施例4至6中,在不成为使用永磁体内的问题的范围内抑制Δφ。另外,如果直径是相同的,则杆状Nd-Fe-B基烧结环磁体和直径双极性不矛盾的Nd-Fe-B比径向各向异性Nd-Fe-B基烧结环磁铁。烧结扎带环磁体在转子磁铁的树脂层的表面上具有更高的Bo。因此,当有必要增加磁力并增加电动机的扭矩时,使用设置有杆无序的ND-Fe-B基烧结环磁体的转子磁体。\n\n【0031】\n\n(例5)\n\n对称8-管道径向各向异性ND-Fe-B型烧结环磁铁(外径:60 mm,内径:48 mm,轴长:20mm,化学转化处理和氨基改性环氧阳离子电沉积涂层(膜20μm (厚)是应用的。一种厌氧粘合剂(由Henkel Lock紧密制造,产品名称:锁定拧紧AV 138)应用于马氏体不锈钢的后轭端面(由SUS403制造)a预制件通过装配由PPS树脂制成的四个圆形杆状垫片,并将其粘附到ND-Fe-B基烧结环磁体的外周表面上。在将预制件设定为模具(未示出)之后,将沉淀的PPS树脂加热至310℃的温度,并且在熔化之后,将其注入注塑模具中,并进行冷却。,PPS。,PPS用PPS树脂(涂层最薄的外周表面的涂层厚度的涂层厚度为1mm)树脂,并且获得图8所示的转子磁体。接下来,室温,磁磁磁畴强度在转子磁铁的径向各向异性ND-Fe-B型烧结环磁体的各向异性赋予方向,对称的8偏振磁铁。在磁化之后在室温下测量用于转子的磁体的总磁通量φo。当圆周方向上的表面磁通密度分布在磁体主体的用于转子的内周表面处测量时,表面磁通密度Bo是峰值。制备100个转子磁铁的结果,并且在80℃的温水中在温水中进行浸渍试验,在涂覆的树脂层中也没有观察到任何转子磁体,并且正常出现。在浸渍测试之后,在室温下测量转子磁体φO\'的总磁通量。此外,当剥离浸渍试验后转子的磁体的树脂层剥离时,在环磁体中没有观察到锈。此外,表2示出了在这些浸没试验之后测量转子的磁体的磁通量Δφ的磁通量ΔΦ的结果。\n\n【0032】\n\n(例6)\n\n直径 - 极杆辅助ND-FE-B型烧结环磁铁(外径:60 mm,内径:48 mm,轴长:20mm,化学转化处理和氨基改性环氧阳离子电沉积涂层(20μm厚度))PPS树脂施加到由马氏体不锈钢的后轭的端面(由Henkel Lock Tight,产品名称:锁定紧缩AV 138制造))。通过粘附制造预制件体背轭到基于ND-Fe-B的烧结环磁体的外周表面,并将后轭粘附到基于ND-Fe-B的烧结环磁体的外周表面。在将预制件设定为模具(未示出)之后,将沉淀的PPS树脂加热至310℃的温度,并且在熔化之后,将其注入注塑模具中,并进行冷却。,PPS。,PPS用PPS树脂(涂层最薄的外周表面的涂层厚度的涂层厚度为1mm)树脂,并且获得图8所示的转子磁体。接下来,转子烧结环磁体的直径沿着基于各向异性的,磁磁磁场强度用作磁磁磁场强度直径的直径:1592ka / m。我磁化。在磁化之后在室温下测量用于转子的磁体的总磁通量φo。当圆周方向上的表面磁通密度分布在磁体主体的用于转子的内周表面处测量时,表面磁通密度Bo是峰值。制备100个转子磁铁的结果,并且在80℃的温水中在温水中进行浸渍试验,在涂覆的树脂层中也没有观察到任何转子磁体,并且正常出现。在浸渍测试之后,在室温下测量转子磁体φO\'的总磁通量。此外,当剥离浸渍试验后转子的磁体的树脂层剥离时,在环磁体中没有观察到锈。此外,表2示出了在这些浸没试验之后测量转子的磁体的磁通量Δφ的磁通量ΔΦ的结果。\n\n【0033】\n\n比较例2.\n\n厌氧粘合剂(由Henkel岩石制造,在对称8极杆状ND-Fe-B型烧结环磁铁的外周表面上(外径:60 mm,内径:48 mm,轴长:20 mm) 。产品名称:锁定紧缩AV138)应用,由马氏体不锈钢(SUS403)组成的后轭粘合,并将获得的预备磁体设定为模具(未示出),然后颗粒状PPS树脂设定为模具将混合物在310℃的温度下熔化并注入模具中并从记忆模具中取出,该模具被冷却并固化。通过该第一注射成型形成的涂覆树脂层,其涂有一部分预制件。将该形体被设定为另一模具(未示出),然后通过执行第二注射成型(最薄的内周涂层厚度:1mm)涂覆PPS树脂,用于使转子获得磁体。此后,以与实施例5相同的方式磁化。在磁化之后在室温下测量用于转子的磁体的总磁通量φo。当圆周方向上的表面磁通密度分布在磁体主体的用于转子的内周表面处测量时,表面磁通密度Bo是峰值。由100℃得到100杆磁铁的结果,在80℃下将所得物浸入温水中,并且当浸渍时间经过50小时时,肿胀也发生在任何转子的磁体树脂涂层中。在浸渍测试之后,在室温下测量转子磁体φO\'的总磁通量。另外,当剥离这些树脂涂层时,在永磁体的表面上观察到锈。此外,表2示出了在这些浸没试验之后测量转子的磁体的磁通量Δφ的磁通量ΔΦ的结果。在实施例4至6中,比较例2在ND-Fe-B基烧结环磁体中生锈,并且Δφ变成了不可接受的值。\n\n【0034】\n\n[表2]\n\n\n\n【0035】\n\n(例7)\n\n通过将定子和主轴和主轴和电动机壳体中的另一个轴承粘贴到电动机壳体中的电动机壳体密封,其中定子或电缆用定子或电缆压配,具有带有绕组的定子或电缆的绕组。然后,图1的泵溶液中的电动机。4是构造的。液体密封机构和液压调节机构填充有电动机壳体内的丙二醇水溶液(室温)并填充在转子磁体和电动机壳体之间。在这种状态下,通过电缆向绕组提供驱动电流,转子磁铁和主轴被旋转。从旋转开始时200小时后,停止泵溶液中的电动机,并取出从内部装配到主轴的磁化转子。在转子表面上的树脂涂层中未观察到它,它是正常的外观。剥离树脂涂层时,在环磁体中没有观察到锈。\n\n【0036】\n\n(比较例3)\n\n用于比较例1的转子的磁体固定到主轴,与实施例1中的方式相同,在图4的泵溶液中的电动机。4是构成的。液体密封机构和液压调节机构填充有电动机壳体内的丙二醇水溶液(室温)并填充在转子磁体和电动机壳体之间。在这种状态下,通过电缆向绕组提供驱动电流,并且转子磁体和主轴旋转。从旋转开始50小时后,停止泵溶液中的电动机,取出固定到主轴的转子的磁体。在转子表面上的树脂涂层中发生肿胀。树\n\n当剥离脂肪涂层时,在环磁体中观察到锈的发生。\n\n[简要描述;简介]\n\n【0037】\n\n【图1】图1是关于本发明第1实施方式的转子的磁体的剖视图。\n\n【图2】它是初步磁体的分解透视图。\n\n图3.图3是图1的转子的磁体的成型装置的剖视图。\n\n图4.图3是表示本发明中液体中的电动机的剖视图。\n\n图5.图3是关于本发明第二实施例的转子的磁体的剖视图。\n\n6.图3是关于本发明的第3实施方式的转子的磁体的剖视图。\n\n图7.图3是关于本发明第四实施例的转子的磁体的剖视图。\n\n图8图3是关于本发明第五实施例的转子的磁体的剖视图。\n\n图9它是传统转子磁体的剖视图。\n\n图10.图3是表示常规液体中的电动机的剖视图。\n\n11.它是传统转子磁体的剖视图。\n\n12.它是传统转子磁体的剖视图。\n\n图13.它是传统转子磁体的剖视图。\n\n14.图3是传统转子磁体的成型模具的剖视图。\n\n[标志的说明]\n\n【0038】\n\n1:永久磁铁,2:返回约克,2B:控股孔,2C:法兰部,\n\n3:涂层树脂层,4:垫片,5:备用磁铁,6:鳍,\n\n20:Stor,22:Motor Casing,23:轴承,24:轴承,\n\n25:定子绕组,26:电缆,27:液压调节机构,28:液体密封机构,\n\n31:主轴。');
INSERT INTO `os_patent_instruction_text` VALUES (13040, 22869, '【技術分野】\n\n【0001】\n\n本発明は、磁気作用部に高い磁束密度や高磁気勾配を発生させるための極集中型の磁気回路およびそれを用いた磁気分離装置に関する。\n\n【背景技術】\n\n【0002】\n\n免疫学、組織適合性検査、癌研究、移植医学、細菌学、寄生虫学、DNAテクノロジー、臨床化学等の分野での特定物質或いは細胞の分離精製技術などに用いられる磁気分離装置には、表面磁束密度や磁場勾配の高い磁気発生手段が要求されている。\n\n【0003】\n\n近年、夾雑物を多数含んだ水溶液から特定の目的物質を分離精製する方法として、磁気ビーズを用いた磁気分離精製方法、いわゆるIMS(Immunomagnetic separation)法が多く用いられている。磁気ビーズは、軟磁性を持ったコアを親水性ポリマーで被い、滑らかな表面にすると同時に、目的の有機物質等を選択的に捕捉する抗体あるいは他の分子を表面に修飾した微粒子であり、目的物質、例えばDNA(デオキシリボ核酸)を表面に捕捉することができる。IMS法は、目的物質を捕捉した磁気ビーズを含んだ水溶液を収納した容器の外側に磁石を配置し、その磁場で磁気ビーズを容器の壁面に集めて保持し、次いで上澄みを除去し、磁場を除去するとともに新たな試薬を加えることで磁気ビーズ表面に捕捉されたDNAを解放し、再び磁場を作用させて磁気ビーズを固定することで目的物質を分離精製するものである。\n\n【0004】\n\n磁気ビーズを分離する装置として、例えば特許第3085709号公報(特許文献1)に開示されたものがある。これは、試験媒体から磁気反応的コロイド状粒子を分離するためのもので、少なくとも1個の容器と、この容器内で試験媒体内に高勾配磁場を発生することのできる磁気手段から構成されている。磁場発生手段は、4個または6個の永久磁石または電磁石を備え、容器の外側に容器を収納する中空部を区切るように配置されており、容器の内側に開いた界磁勾配をつくりだす。これにより、磁場は、中空部の縁部近くで極めて強く、中空部の中央では理論上はゼロとなることから、中空部に高勾配磁場が形成されると説明されている。また、磁石は、円筒状の強磁性ヨークに取り付けられることが好ましいとされている。特許文献2は極異方性磁石の成形用の金型に関する発明であり、成形空間に磁界を印加する永久磁石を用いた磁気回路を開示している。\n\n【0005】\n\n【特許文献1】特許第3085709号公報(5頁右段落第30行〜6頁右段落第30行)\n\n【特許文献2】特開2002-367844号公報\n\n【発明の開示】\n\n【発明が解決しようとする課題】\n\n【0006】\n\n近年、従来から使用されてきた直径2μm〜10μm程度の大きさの磁気ビーズに対して、1μmあるいはそれ以下の直径を持つ磁気ビーズが使用されるようになってきた。その理由の一つに、目的物質の計数の容易さが挙げられる。即ち、磁気ビーズを小さくすることで、磁気ビーズ表面に付ける抗体を1個のみにし、磁気ビーズ1個につき一つの目的物質を捕捉させ、磁気ビーズの数を磁気的に数えることで、目的物質の数を試薬を用いて分離することなく計数することを可能にするのである。しかし、磁気ビーズが小さくなるに従い、磁気ビーズの永久磁石への吸着力が弱くなり、夾雑物が混入している水溶液の粘性に打ち勝って永久磁石近傍に集まるまでの時間が長くなる、という問題が生じてきた。例えば、直径0.01μmの酸化鉄を磁性体とする磁気ビーズに対し、単板永久磁石を用いた市販の分離装置の中には、80%の磁気ビーズを磁石近傍に吸引するのに約8時間もかかっており、研究や新薬開発に大きなネックとなっている。\n\n【0007】\n\nここで磁気ビーズの吸着力について説明する。吸着力は作用する磁気力に等しく、磁気力をFm、磁気ビーズの磁気双極子モーメントをm、その場所の磁束密度Bを用いると下記数1で表される。なお、斜体はベクトルを表す。\n\n(Symposium on New MAGNETIC SCIENCE \'97 、Proceeding of The First Meeting Nov.27-28\n\n\'97-Japan、第1頁〜19頁参照)\n\n【0008】\n\n【数1】\n\n\n\n【0009】\n\nこれを、真空の透磁率をμ0、磁気ビーズが均一に磁化される球形の微粒子であると仮定した時の体積をVp、磁気ビーズの体積磁化率をχp、磁気ビーズ周辺の分散媒体の体積磁化率をχf、磁場の強さをHとし、磁気力Fmの座標軸のある方向成分をFmξと定義すると、数1は下記数2と書き換えられる。\n\n【0010】\n\n【数2】\n\n\n\n【0011】\n\n磁化量M*は、磁気ビーズの体積磁化率と周辺の分散媒体の磁化率および磁場の関数であるが、磁気ビーズは弱い磁場中でも容易に飽和するため、ある一定以上の強度を持つ磁場中では磁気ビーズの磁化量M*は一定となる。従って、磁気力Fmξは、磁気ビーズの大きさ(Vp)と、磁場の強度勾配(▽ξH) に比例することになる。従って、磁気ビーズの吸着力を強力にするには、大きな磁場勾配を与えることが重要となる。\n\n【0012】\n\n前記特許文献1における磁気分離装置は、高勾配磁場を発生することができるとし、実施例1において、平均磁場勾配が3.2KGauss/cm(32T/m)であったことが開示されている。この実施例1に示された磁気分離仕様を用いて、直径約10nmのフェライト系磁気ビーズを含む水溶液から80%を分離するまでの時間を磁気シミュレーションしたところ、約60分かかるという結果となり、これでは素早い実験には不十分であり、より強力な分離時間の短縮が図れる新たな磁場発生手段が必要となってきた。\n\n【0013】\n\n従って本発明は、永久磁石を用いた磁気回路において、最大限に強い磁場を発生させ、強い磁気勾配を得ることができる磁気回路、およびそれを用いた磁気分離装置を提供することを目的としている。\n\n【課題を解決するための手段】\n\n【0014】\n\n本願第一の発明の極集中型磁気回路は、一対の永久磁石をその磁化方向が接合面に対して対称となるように接合して磁極を構成した磁石ユニットを、磁気作用側表面部に交互に異なる極性の磁極が生じるように連ねて極異方性磁石体を形成し、前記永久磁石の磁化方\n\n向を該永久磁石の中心部を通る径方向に対して50°以上70°以下の角度とすることを特徴とする。磁化方向の角度の好ましい範囲は55〜65°である。\n\n【0015】\n\nまた、磁極数に係わりなく磁化方向が一定であることが特徴(磁化方向が永久磁石の中心部を通る径方向に対して60°±5°)であり、製作が容易である。好ましい磁化方向は60°±3°である。\n\n【0016】\n\nまた、永久磁石内の磁化方向は平行であることを特徴としている。\n\n【0017】\n\nまた、本発明は、磁極数が4極、6極、8極、10極および12極の何れの極異方性磁石に対しても適用することができる。\n\n【0018】\n\n本発明は、医薬、化学等の分野での特定物質或いは細胞の分離精製などに使用される磁気分離装置に用いると好適であり、磁気分離装置内に設置される容器の中央部から容器内面までの平均磁場勾配が20KGauss/cm以上、さらには30KGauss/cm以上の磁気分離装置が得られる。\n\n【0019】\n\n本願第二の発明の磁気分離装置は、永久磁石磁気回路と、前記永久磁石磁気回路の中央部に試料挿入部を有し、当該試料挿入部に磁場勾配を発生させた磁気分離装置において、\n\n前記永久磁石磁気回路は、一対の永久磁石をその磁化方向が接合面に対して対称となるように接合してなり前記試料挿入部に臨む磁極を形成する磁石ユニットを複数備え互いに隣接する前記磁極の極性が異なるように前記磁石ユニットを略筒状に配置してなることを特徴とする。従来は一磁極を単一の磁石で形成していたため、得られる磁場勾配が非常に小さいものであったが、本発明のように同磁極を対向させるような磁石ユニットとすることで永久磁石磁気回路の中央部に従来よりも遥かに高い磁場勾配を発生させることができる。ここで永久磁石磁気回路の略筒状との記載は、完全な円形状の筒のみを示すものではなく、6角形、8角形などの多角形の筒状でもよいものとする。また、ここで示す永久磁石とは単一の磁石ブロックからなる永久磁石だけでなく、磁石のサイズによっては複数の磁石ブロックを組み合わせたものであって、各磁石ブロックの磁化方向が略同一方向であり、一体とみなすことができる磁石ブロック群であってもよいものとする。\n\n【0020】\n\n本発明の磁気分離装置の具体的な構成として、永久磁石磁気回路と、前記永久磁石磁気回路の中央部に試料挿入部を有し、当該試料挿入部に磁場勾配を発生させた磁気分離装置において、前記磁気分離装置は、略筒状の軟磁性のバックヨークと、前記バックヨークの中心部に設けられた非磁性の試料挿入部と、前記バックヨークと前記試料挿入部の間に構成され、一対の永久磁石をその磁化方向が接合面に対して対称となるように接合してなり前記試料挿入部に臨む磁極を形成する磁石ユニットを複数備え互いに隣接する前記磁極の極性が異なるように前記磁石ユニットを略筒状に配置してなる永久磁石磁気回路と、前記バックヨークと前記試料挿入部の間を覆う非磁性のカバーとからなるものを採用することができる。この構成により例えば直径12mmの試料挿入部を持つ磁気分離装置でも試料挿入部の径方向の磁場勾配が200T/m以上、さらには250T/mのものを製造できる。\n\n【0021】\n\nこの磁石ユニットは、各永久磁石の磁化方向が永久磁石の中心部を通る径方向に対して20〜80°の角度となるようにすることが好ましい。20°未満、80°超のどちらであっても永久磁石磁気回路の磁極部での表面磁束密度が低下し、高い磁場配向の試料挿入部分を作ることができない。好ましい範囲は40〜75°、更に好ましい範囲は55〜65°である。永久磁石は高い磁力を発生させることができるものほど望ましく、Nd-Fe-B系等の希土類焼結磁石或いはボンド磁石を用いることが好ましいが、Sm-Co系\n\n或いはフェライト系の磁石であってもよい。これにより試料挿入部の内周面で1.5T、さらには1.7T以上の表面磁束密度を持つ磁気分離装置を得ることができる。\n\n【0022】\n\n永久磁石磁気回路上の磁極数は4〜12極で構成することが好ましい。8極以下では、試料挿入部で得られる空隙磁束密度のピークがさらに上がり、本発明の求める高い磁場勾配が得られるため、さらには、4〜8極が好ましい。永久磁石磁気回路の組立性などを考慮しても4極とすることが最も有用である。\n\n【0023】\n\nまた、永久磁石磁気回路は内径Φinに対して、肉厚Tが3.0〜7.0倍の範囲で形成することが好ましい。更に好ましくは肉厚Tが4.0〜6.0倍の範囲である。内径Φinに対して、肉厚Tが3.0倍未満であれば磁力が不足するために所望する高い磁場勾配が得られない。逆に7.0倍を超えても試料挿入部で得られる空隙磁束密度のピークはほぼ一定となり、それ以上の径の幅を持つ永久磁石磁気回路としても高価な永久磁石を無駄に使用するだけで磁気分離装置としての性能向上に繋がらない。肉厚Tは永久磁石磁気回路の外径をΦout、内径をΦinとするとT=(Φout-Φin)/2で表すことができる。永久磁石磁気回路が多角形状であった場合、永久磁石磁気回路上の磁極の角度に沿った径方向での寸法とする。\n\n【0024】\n\n本発明は、医薬、化学等の分野での特定物質或いは細胞の分離精製などに使用される磁気分離装置に用いることが好適である。\n\n【発明の効果】\n\n【0025】\n\n本願第一の発明は次の効果を有している。\n\n1)永久磁石の磁化方向の設定は、永久磁石の中心部を通る径方向に対して20〜80°と広い範囲がとれる。\n\n2)上記磁化方向の設定値に対し、製作時における誤差を±10°程度は許容でき、製作が容易である。\n\n3)磁極数に係わりなく磁化方向が一定でよく、製作が容易である。\n\n4)ヨークが不用であり、製造面で有利である。\n\n【0026】\n\n本願第二の発明は次の効果を有している。\n\n1)例えば試料挿入部の直径が12mmの磁気分離装置であっても、試料挿入部の径方向の磁場勾配が200T/m以上の磁気分離装置とすることができ、分離時間の短縮が可能である。\n\n2)永久磁石の磁化方向の設定は、永久磁石の中心部を通る径方向に対して20〜80°と広い範囲がとれる。\n\n3)上記磁化方向の設定値に対し、多少の誤差があっても試料挿入部で得られる空隙磁束密度は余り変わらないため、磁化配向の誤差を±10°程度は許容できるので製作が容易である。\n\n4)磁極数に係わりなく最大の磁束密度が得られる永久磁石の磁化方向はその磁石の中心を通る径方向に対して60°±5°で一定であり設計が容易である。\n\n【発明を実施するための最良の形態】\n\n【0027】\n\n以下、本発明の極集中型磁気回路を、6極の磁極を有する円筒状の永久磁石を用いた磁場発生手段に適用した例で説明する。円筒状磁石の内部を磁気作用空間とした場合、この空間の磁気勾配を大きくするためには、円筒状磁石の軸中心部は磁場強度がゼロであるとみなせることから、内径側表面の表面磁束密度を大きくすればよく、この点に関して説明する。磁場発生手段は、扇状の永久磁石をリング状に連ねた磁石体10からなり、図1にその平面図を示す。本例の磁石体10は内径側を磁気作用空間としており、磁石体10の磁気作用面は内周側の表面であり、こちらに表面磁束密度のピーク値が生じるように内周\n\n部に6極の磁極を形成している。磁石体10は、12個の扇状の永久磁石(1a、1b、…、6a、6b)を円周方向に配置してリング状とし、2個の永久磁石を対にした磁石ユニットで一極を形成している。全ての永久磁石は、その磁化方向が、永久磁石に設定した基準線に対し所定の傾斜角をなして平行になるように着磁されている。基準線としては、永久磁石の外周部の中心での接線Aや、永久磁石の中心部を通る径方向の線Bとすると全ての永久磁石に共通となり好ましいが、一対の永久磁石の境界線Cとすることもできる。\n\n【0028】\n\n図1に示している磁石ユニット1と磁石ユニット2を例に、磁化方向について具体的に説明する。磁石ユニット1は永久磁石1a、1bとから成り、永久磁石1aは、永久磁石の中心部を通る径方向Bに対し、反時計方向に60°の角度で内周側に向いて平行着磁されている。着磁方向は磁石内部で磁力線がS極からN極へ向かう方向とし図1ではそれを矢印で示す。永久磁石1bは、永久磁石の中心部を通る径方向Bに対し、時計方向に60°の角度で内周側に向いて平行着磁されている。即ち、磁石ユニット1は、接合境界線c1を中心にして対称に、境界線c1に向いた内周方向に磁化されており、内周部の境界線c1付近がN極となる。なお、以後、この永久磁石の中心部を通る径方向Bに対する磁化方向の角度を傾斜角とも称する。\n\n【0029】\n\n一方、隣接する磁石ユニット2は永久磁石2a、2bとから成り、永久磁石2aは、反時計方向に60°の傾斜角で外周側に向いて平行着磁されている。永久磁石2bは、時計方向に60°の傾斜度で外周側に向いて平行着磁されている。即ち、磁石ユニット2は、接合境界線c2を中心にして対称に、境界線c2に向いた外周方向に磁化されており、内周部の境界線c2付近がS極となる。隣接する磁石ユニットは順次同様の構成をとっている。\n\n【0030】\n\n上述したように、磁石ユニット1は、その磁化方向が永久磁石1a、1bの境界線c1に向って内周に向いているので、磁力線は境界線c1に向かって集中されてキャビティへと導かれ、表面磁束密度は境界線c1上で最大となる。また、隣接する磁石ユニット2は、その磁化方向が外周に向って永久磁石2a、2bの境界線c2から離れるように向いているので、キャビティからの磁力線は境界線c2へ集中するように導かれ、表面磁束密度は境界線c2上で最大となる。また、磁石ユニット2の例えば永久磁石2aへ導かれた磁力線は、永久磁石2aの磁化方向に従い隣接する永久磁石1bへと向かい、永久磁石2aから永久磁石1bへと通過し、永久磁石2a及び1bの外周面にはほとんど漏れない。\n\n【0031】\n\n(実施例1)\n\n永久磁石の磁化方向の傾斜角を変えると、磁力線が通過する経路が変わるため、磁石ユニットの磁極部における表面磁束密度の大きさが変化するであろうことが推察されるが、磁石ユニットの磁化角度と極部の表面磁束密度の関係とを定量的に説明した資料はない。そこで、最大の表面磁束密度を得るために永久磁石の磁化角度をどのように規定すべきかについて、磁気シミュレーションを行い検討した。\n\n表1に、4極、6極、8極、10極、12極の磁石体において、磁化方向の傾斜角を0、20、40、50、60、70、80°と変えた時の内周表面の磁束密度の大きさ(法線方向成分のみ)を磁場解析で求め、傾斜角0°の表面磁束密度ピーク値を基準とした各傾斜角における表面磁束密度ピーク値の比率を示す。図2,3,4に、そのうちの4極、8極、12極の波形を示す。なお、傾斜角0°の磁化方向は、極数が多くなる程ラジアル異方性配向の磁化方向に近くなる。\n\n【0032】\n\n【表1】\n\n\n\n【0033】\n\n表1によれば、ピークの磁束密度は、極数に係わらず傾斜角60°の時最大値をとることがわかり、設計上の傾斜角は60°とするのがよい。しかし、50°の場合とほとんど差がなく、本磁石体を製造する場合、磁化方向の設計値は、例えば50°又は55°或いは60°とするなど、50°から60°の間の任意の値としてもよい。実際に製作すると、永久磁石製作時の配向や永久磁石の組み立てなどを通じて磁化方向に誤差がでるが、表1に示されるように、20°から80°との間に大きな問題となると思われるような特段の差はなく、実際の磁化方向がこの間にあればよい。即ち、本磁石体は磁化方向が設計値よりある程度ずれても許容できるということであり、製作が容易であることを表している。\n\n【0034】\n\n図2,3,4では法線方向成分のみの磁束密度の大きさを示したため、磁極上にピーク値が現れる。しかし、接線方向成分をみると磁極間にピーク値が現れる。磁界強度は法線方向成分のベクトルと接線方向成分のベクトルとを合成して求める。このようにして求めた磁界強度分布から更に磁気勾配分布を求めることができる。図5に内径11mmの永久磁石磁気回路の試料挿入部における磁気勾配分布の一例を示す。原点は試料挿入部の中心にあり試料挿入部の1/4を示す。磁気回路全体では4つの磁極を有し図5ではX軸上とY軸上のそれぞれ5.5mmの位置に磁極がある。色の濃い箇所が磁気勾配の大きい領域である。磁気勾配が大きいことと、磁気勾配の大きい領域が磁極上および磁極間を含め広く分布していることが特徴である。ここでは強い磁気吸引力が作用するため磁気ビーズは容器の壁面に短時間のうちに捕捉される。\n\n【0035】\n\n(実施例2)\n\n実際に下記共通仕様の下で、傾斜角が0°、20°、60°の3種類の平行着磁磁石を製作し、表面磁束密度を測定した。その波形を図6に示す。\n\n1)配向磁石共通仕様\n\n·材質    Nd-Fe-B、焼結磁石\n\n·寸法    Φ50×Φ30×10\n\n·磁極    内周12極\n\n2)測定\n\n·測定器  ガウスメータ(日本電磁測器(株)製、Model6800マグネットアナライザ)\n\n図6に示すように、傾斜角0°の場合の表面磁束密度のピーク値は0.45T、傾斜角60°の場合のそれは0.8Tであり、傾斜角0°の場合を基準100%とした時、傾斜角60°では178%となり、ほぼ表1に示す磁場解析結果と同じであった。これより、表1に示した磁場解析結果は、実際の場合と高い整合性を有しており、これをもとにした検討結果には信頼性があると判断できる。この極集中型磁気回路を用いて磁気分離装置を組み上げた所、従来に無い磁気勾配をもつものが得られ、測定時間が大幅に短縮できる磁気分離装置が得られた。\n\n【0036】\n\n本発明の極集中型磁気回路を、内周面に磁極を有するリング状磁石に適用した例で説明\n\nしたが、外周面に磁極を有するリング状磁石にも適用可能である。また、平板状や多角形状の磁石に対しても同様に適用できる。また、磁石は高い磁力を発生させることができるものほど望ましく、Nd-Fe-B系等の希土類焼結磁石或いはボンド磁石を用いることが好ましいが、Sm-Co系或いはフェライト系の磁石であってもよい。\n\n【0037】\n\n(実施例3)\n\n本願第二の発明の第一の実施例の斜視図を図7に、垂直方向上側から見た図を図8に示す。本実施例は、Nd-Fe-B焼結磁石からなる8ヶの永久磁石を用いて、1a,1bを一対とする磁石ユニット1、2a,2bを一対とする磁石ユニット2、3a,3bを一対とする磁石ユニット3、4a,4bを一対とする磁石ユニット4を構成し、それぞれの磁石ユニットの内径側を1磁極とし、かつ磁極が交互になるように筒状に構成した永久磁石磁気回路9と、磁性材料(SUS430製)からなるバックヨーク5、非磁性材料(Be-Cu製)からなる試料挿入部6、非磁性材料(アルミ合金製)からなる上下のカバー7から構成されている。\n\n【0038】\n\n先ず、永久磁石1a,2a,3a,4aをSUS430製バックヨーク5内に挿入し取り付ける。軟磁性材料であるバックヨーク5を用いることで1a,2a,3a,4aのそれぞれの永久磁石がバックヨーク5に図中吸着力Faの方向で引き寄せられ、容易にバックヨーク5内に挿入することができ安定に保持される。次いで残りの永久磁石1b,2b,3b,4bの挿入を行う。この時、図8に示すように例えば永久磁石1bは、永久磁石1aと接合面に対して対称な極のために反発力Frが働くが、永久磁石2aはバックヨーク5に吸引されているため容易に磁石を挿入することができる。またバックヨーク5を介し、永久磁石2a、1bが閉じた磁気回路を構成するため、磁気分離装置として使用する際にも構造的に安定な磁気回路となる。\n\n【0039】\n\n一方バックヨークに非磁性体を構造材として用いた場合には、径方向に抑制された反発力が軸方向に作用し、軸方向に対して構造的に不安定となる。すなわち、組立て時および磁気分離装置として使用時に上述の問題が発生することから、非磁性のバックヨークでは軸方向に対して安定しないために同様の問題が出るため軟磁性のバックヨークが最適である。次いで永久磁石2b、3b、4bも同様に順次組み込む。その後、Be-Cu製からなる試料挿入部6及びアルミ合金製のカバー7で覆うことで、磁気分離装置10が構成される。この時、磁石ユニット1は、その磁化方向が接合面に対して対称となるように接合される永久磁石1a、1bの組み合わせである。本実施例においては、この磁石ユニットを1単位とし、磁極を磁気作用側表面部に交互に逆の極性が生じるように連ねている。このように組立られた磁気分離装置10は、内径12mm、外径100mmの極異方性リング磁石となる磁気回路、その磁気回路の外周部に内径100mm、厚さ10mmのSUS430製バックヨーク5及び中心部に内径11mm、厚さ0.5mmの円筒状である試験媒体を挿入するためのBe-Cu製の試料挿入部6からなり、円筒の上下面はアルミ合金製のカバー7により密封される。実際の使用時には液体と分離される磁気ビーズなどが入った試料ケース8が図7に示すように挿入される。多数の試料ケースがトコロテン式に試料挿入部から押出されるような機構とすればさらに測定時間の短縮を計ることもできる。\n\n【0040】\n\n磁石ユニットの構成について、以下図9を用いて詳細に説明する。磁石ユニット1は、隣り合う永久磁石1a、1bとから成る。永久磁石磁気回路9の中心から見て反時計方向側にある永久磁石1aは、当該永久磁石の中心部を通る径方向Bに対し、反時計方向に60°の角度で内周側に向いて平行着磁されている。ここで、内周側とは磁石ユニット1を構成する他方の永久磁石である永久磁石1b側である。永久磁石磁気回路9の中心から見て時計方向側にある永久磁石1bは、当該永久磁石の中心部を通る径方向Bに対し、時計方向に60°の角度で内周側に向いて平行着磁されている。ここで、内周側とは磁石ユニット1を構成する他方の永久磁石である永久磁石1a側である。即ち、磁石ユニット1は\n\n、永久磁石1a、1bの接合面の位置を表す接合境界線C1を中心にして線対称に磁化されており、永久磁石1a、1b境界線C1上で永久磁石磁気回路9の内周面側に磁極Nの中心が形成される。接合面において永久磁石1a、1bは必ずしも互いに接合される必要は無く、密着又は近接して固定配置されていれば十分である。したがって本発明における接合面の意味は両磁石が互いに接合,密着又は近接してなる面のことである。なお、以後、この永久磁石の中心部を通る径方向Bに対する磁化方向の角度θを傾斜角とも称する。\n\n【0041】\n\n一方、磁石ユニット1に隣接する磁石ユニット2は、隣り合う永久磁石2a、2bとから成る。永久磁石磁気回路9の中心から見て反時計方向側にある永久磁石2aは、当該永久磁石の中心部を通る径方向Bに対し、反時計方向に60°の角度で外周側に向いて平行着磁されている。ここで、外周側とは磁石ユニット2を構成する他方の永久磁石である永久磁石2b側とは反対の側である。永久磁石磁気回路9の中心から見て時計方向側にある永久磁石2bは、当該永久磁石の中心部を通る径方向Bに対し、時計方向に60°の角度で外周側に向いて平行着磁されている。ここで、外周側とは磁石ユニット2を構成する他方の永久磁石である永久磁石2a側とは反対の側である。即ち、磁石ユニット2は、永久磁石2a、2bの接合面の位置を表す接合境界線C2を中心にして線対称に磁化されており、永久磁石2a、2b境界線C2上で永久磁石磁気回路9の内周面側に磁極Sの中心が形成される。隣接する磁石ユニットは順次同様の構成をとり永久磁石磁気回路9を構成する。\n\n【0042】\n\n上述したように、磁石ユニット1は、その磁化方向が永久磁石1a、1bの境界線に向いており、磁力線は境界線に向かって集中されているので、C1上の内周側から発生する磁場強度は、単一磁石よりも大きくすることができ、本実施例の試料挿入部6表面において、永久磁石のBr1.4Tを超える1.8Tの表面磁束密度を得ることができた。隣接する磁石ユニット2は、その磁化方向が外周に向って永久磁石2a、2bの境界線から離れるように向いているので、磁力線は2a、2bの境界線へ集中するように導かれ、表面磁束密度は境界線C2上の内周側で最大となる。また、試料挿入部の中心部から径方向への磁場勾配は293T/mであった。\n\n【0043】\n\n(実施例4)\n\n実際に実施例3に示した磁気分離装置を下記共通仕様の下で、傾斜角が0°、20°、60°の3種類の平行着磁した永久磁石を製作し、表面磁束密度を測定した。その波形を図10に示す。\n\n1)配向磁石共通仕様\n\n·材質    Nd-Fe-B系焼結磁石(Br1.4T,bHc1100kA/m)\n\n·寸法    Φ50×Φ10×10\n\n·磁極    内周4極\n\n2)測定\n\n·測定器  ガウスメータ(日本電磁測器(株)製、Model6800マグネットアナライザ)\n\n図10に示すように、傾斜角0°の場合の表面磁束密度のピーク値は1T、傾斜角60°の場合のそれは2Tであり、傾斜角0°の場合を基準100%とした時、傾斜角60°では178%となり、表1に示す磁場解析結果より顕著な効果が観測された。この極集中型磁気回路を用いて磁気分離装置を組み上げた所、従来に無い磁場勾配をもつものが得られ、測定時間が大幅に短縮できる磁気分離装置が得られた。\n\n【0044】\n\n(実施例5)\n\n図10に示す永久磁石磁気回路の内径Φinと外径Φoutとの関係を図11に示す。磁石内径Φinが6、10、20mmの各々の永久磁石磁気回路において、外径Φoutの寸法形状により試料挿入部で得られる最大磁束密度の値を測定したものである。図より\n\n内径Φinに対して所定の外径Φout以上になるとほぼ得られる磁束密度は一定であり、それ以上の外径を持つ永久磁石磁気回路としても磁気分離装置が大型化するだけで利点が無いことが解る。図11中の破線部はピークの磁束密度に対して飽和率97%となる外径Φoutを示すものである。これを基に図12のように横軸を内径Φin、縦軸を永久磁石磁気回路の肉厚T(T=(外径Φout-内径Φin)/2)としたグラフを作成すると、永久磁石磁気回路の肉厚Tは内径Φinに対して7.0倍以下とすれば十分な磁束密度が得られることが解る。\n\n【図面の簡単な説明】\n\n【0045】\n\n【図1】本発明を説明するための磁石体の磁化方向を説明するための図。\n\n【図2】極数と磁化方向傾斜角を変えて磁場解析した時の磁束密度の大きさを示す図。\n\n【図3】極数と磁化方向傾斜角を変えて磁場解析した時の磁束密度の大きさを示す図。\n\n【図4】極数と磁化方向傾斜角を変えて磁場解析した時の磁束密度の大きさを示す図。\n\n【図5】永久磁石磁気回路の試料挿入部における磁気勾配分布の一例を示す図。\n\n【図6】磁化方向の傾斜角を変えて製作した磁石体の表面磁束密度の違いを示す図。\n\n【図7】本発明の磁気分離装置を説明するための斜視図。\n\n【図8】本発明の磁気分離装置を垂直方向上側から見た図。\n\n【図9】本発明の磁気分離装置の永久磁石磁気回路を説明するための図\n\n【図10】磁化方向の傾斜角を変えて製作した磁石体の表面磁束密度の違いを示す図。\n\n【図11】内径および外径を変えて製作した時の表面磁束密度ピーク値の違いを示す図。\n\n【図12】磁石内径を変えた場合の必要磁石肉厚を示す図。\n\n【符号の説明】\n\n【0046】\n\n1,2  磁石ユニット\n\n1a,1b,2a,2b,3a,3b,4a,4b      永久磁石\n\n5      バックヨーク\n\n6      試料挿入部\n\n7      カバー\n\n8      試料ケース\n\n9      永久磁石磁気回路\n\n10    磁石体\n\n11    磁気分離装置\n\nA      永久磁石の外周幅中心部での接線\n\nB      永久磁石の中心部を通る径方向の線\n\nC      磁石ユニットを成す永久磁石の接合境界線(接合面)', '【技术领域】\n\n【0001】\n\n本发明涉及一种极其浓缩的磁路,用于在磁性工作部中产生高磁通密度和高磁梯度,以及使用该的磁分离装置。\n\n发明背景\n\n【0002】\n\n用于细胞分离净化技术的免疫学,组织相容性试验,癌症研究,移植医学,细菌学,寄生虫,DNA技术,临床化学或细胞分离等。需要具有高磁通密度和磁场梯度的磁产生装置。\n\n【0003】\n\n近年来,作为从含有大量污染物的水溶液中分离和纯化特定目标物质的方法,使用磁珠的磁性分离和纯化方法,经常使用所谓的IMS(免疫磁分离)方法。磁珠覆盖具有亲水聚合物的软磁芯,与光滑的表面相同,选择性地捕获所需有机物质等的抗体或其他分子是修饰到表面的细颗粒。该可以在表面上捕获靶物质,例如DNA(脱氧核糖核酸)。 IMS方法将磁铁放置在含有含有磁性珠粒的水溶液的容器外部,并将磁珠收集在容器的壁上,然后除去上清液,然后除去上清液。通过去除来除去上清液。通过去除并添加新试剂,释放捕获在磁珠表面上的DNA,并且通过再次固定磁场来分离并纯化目标物质以固定磁珠。\n\n【0004】\n\n作为用于分离磁珠的装置,存在例如专利No.3085709(专利文献1)中所公开的装置。这旨在将磁性反应胶体颗粒与测试介质分离,并且由至少一个容器和磁性装置组成,该容器可以在容器中产生高梯度磁场。存在。磁场产生装置包括四个或六个永磁体或电磁铁,并且布置成将存储容器的中空部分分离在容器外部,并在容器内部产生开放场梯度。结果,磁场在中空部分的边缘附近极强,并且说明在中空部分中形成高梯度磁场,因为它在中空部分的中心变为零。此外,优选地,磁体附接到圆柱形铁磁轭。美国专利No.\n\n【0005】\n\n专利文献1 3085709(第6页第30-6-6号第6页)\n\n专利文献2:APHN 2002-367844\n\n发明的描述\n\n本发明要解决的问题\n\n【0006】\n\n近年来,直径为1μm或更小的磁珠用于常规使用的直径为约2μm至10μm的磁珠。其中一个原因是易于计数目标物质。也就是说,通过减少磁珠,仅在磁珠的表面上仅进行1,并且每磁珠捕获一个靶物质,并且磁数磁珠的数量可以计数,可以没有使用试剂分离。然而,由于磁珠变小,磁珠对永磁体的吸附力被削弱,并且液体溶液混合的水溶液的粘度直到其达到污染物的时间它已经发生了永磁体的附近。例如,在市售的隔板中使用单板永磁体的大约8小时,使用直径为0.01μm直径的磁珠,使用单板永磁体的市售分离器,约8小时达到磁体附近的吸气它也是研究和新药开发的大颈部。\n\n【0007】\n\n这里,将描述磁珠的吸附力。吸附力等于磁力作用,并且磁力是Fm,磁珠的磁性偶极力矩是M,并且该位置的磁通密度B由以下静止表示。此外,斜体表示载体。\n\n(新磁科学研讨会97,第一次会议进行了第27-28次会议\n\n\'97  -  japan,p。19至19th)\n\n【0008】\n\n(1)\n\n\n\n【0009】\n\n这是真空渗透性μ0VP和磁珠的体积磁化速率是νp,磁珠的体积磁化率是νp,磁珠的体积磁化速率是χpf,铺设磁场强度,使定向部件与磁力FM的坐标轴线ξ如定义的,等式1用以下等式2重写。\n\n【0010】\n\n¥2.\n\n\n\n【0011】\n\n磁化量M *是磁珠的磁化速率和外围分散介质的磁化率和磁场的功能,但是磁珠在弱磁场中容易饱和,因此在磁场中一定水平的强度或更多级磁性珠粒的磁化量M *变得恒定。因此,磁力FMξ是磁珠的幅度(vp)和磁场的强度梯度(▽ξh)将成比例。因此,重要的是提供一个大的磁场梯度以加强磁珠的吸附力。\n\n【0012】\n\n专利文献1中的磁分离装置公开了可以产生高梯度磁场,并且在实施例1中,平均磁场梯度为3.2 kauss / cm(32 t / m)。使用实施例1中所示的磁性分离规范,当测量含有约10nm直径的铁氧体基磁珠的水溶液的时间时,其结果为约60分钟,即约60分钟。因此,它不足为了快速实验,并且可以缩短更强大的分离时间的新磁场产生装置。\n\n【0013】\n\n因此,本发明旨在提供一种磁路,该磁路可以产生强磁梯度并获得可以使用永磁体在磁路中获得强磁梯度的磁性分离装置。。\n\n[解决问题的手段]\n\n【0014】\n\n本申请的第一发明的极集中磁路将通过键合磁化方向连接到磁极,使得磁化方向相对于粘合表面对称。形成极性磁体机身以便制造永磁体的不同极性和磁化的磁极\n\n通过永磁体中心的径向方向超过50°它的特征在于使角度为70°或更小。磁化方向角度的优选范围为55至65°。\n\n【0015】\n\n此外,无论磁极的数量(相对于通过永磁体的中心部分相对于径向方向60°±5°),磁化方向是恒定的,并且制造容易。优选的磁化方向为60°±3°。\n\n【0016】\n\n此外,永磁体中的磁化方向是平行的。\n\n【0017】\n\n另外,本发明可以应用于任何极性磁体的任何极杆,八个管道,10个极和12极。\n\n【0018】\n\n本发明适用于用于特定物质或细胞分离净化的磁性分离装置,例如药物,化学等,以及从安装在磁性分离装置中的容器的中心部分到内表面该容器将具有20kgauss / cm或更大且甚至超过30kaus / cm的平均磁场梯度的磁分离装置。\n\n【0019】\n\n根据本发明第二方面的磁性分离装置具有永磁磁路和磁性分离装置,以及在永磁磁路的中心部分处具有样品插入部分,并在样品插入中产生磁场梯度部分,\n\n永磁磁路粘合到形成磁极的多个磁体单元,该磁极形成磁极,该磁极形成为使得其磁化方向相对于粘合表面对称,彼此相邻。它的特征在于磁铁单元布置在基本上是圆柱形的,使得磁体基本上是这样的传统上,由于一个磁极由单个磁体形成,所以所获得的磁场梯度非常小,但作为与本发明相同的磁极的磁体单元,它是永磁磁磁磁铁的中心部分电路可以产生比过去更高的磁场梯度。这里,永磁磁路的基本上圆柱形的描述不具有完全圆柱形,并且可以使用诸如六个平方或八个方格的多边形圆柱形形状。此外,这里所示的永磁体不仅是由单个磁体块制成的永磁体,还不仅是根据磁体的尺寸的多个磁体块,并且每个磁体块的磁化方向基本相同。是的,可以是可以考虑的磁体块组。\n\n【0020】\n\n作为本发明的磁分离装置的具体配置,在具有在永磁磁路的中央部分的样品插入部分的磁性分离装置中,在样品插入部分中产生磁场梯度的磁场分离装置在基本上圆柱形的软磁性后轭和设置在后轭的中心处的非磁性样品插入部分之间构成,并且一对磁体单元连接成使得磁化方向连接因此,磁化方向是对称的,并且面向样品插入部分的磁极是不同的,并且彼此相邻的磁极的极性是不同的。可以采用通过基本上布置磁体单元而形成的永磁磁路圆柱形,以及在后轭和样品插入部分之间的非磁性覆盖物。利用这种配置,例如,具有直径为12mm的样品插入部分的磁性分离装置也可以在样品插入部分200t / m或更大的径向方向上产生磁场梯度,甚至超过250 Tm值。\n\n【0021】\n\n磁体单元优选地通过永磁体的中心部分具有20至80°的角度。即使它小于20°且大于80°,即使超过80°,磁极部分的表面磁通密度也降低,并且不能产生高磁场取向的样品插入部分。优选的范围为40至75°,更优选的范围为55-65°。永磁体是理想的,因为可以产生高磁力,并且优选使用稀土烧结磁体或粘合磁体,例如ND-Fe-B系统,但是SM-Co系统\n\n或者,它可以是铁氧体磁体。结果,在样品插入部分的内周表面上获得具有1.5 t且甚至大于1.7甚至的表面磁通密度的表面磁通密度的磁性分离装置。\n\n【0022】\n\n永磁磁路上的磁极的数量优选为4至12个极。下面的8以下,由于通过样品插入部分获得的空隙磁通密度的峰值进一步增加,并且可以获得本发明的高磁场梯度,进一步优选为4至8个吹笛液。考虑到永磁磁路等的组装,是四极最有用的是。\n\n【0023】\n\n另外,优选的是,永磁磁路在内径φin的范围内形成3.0至7.0倍的厚度t。更优选地,厚度T在4.0至6.0倍的范围内。对于内径φin,如果厚度T小于3.0倍,则不能获得期望磁力不足的高磁场梯度。相反,即使它超过7.0倍,也通过样品插入部分获得的空隙磁通密度的峰值变得基本恒定,并且它被磁性地用作永磁磁路,其宽度或更昂贵的磁力永磁体不会连接到分离装置的性能改进。当永磁磁路的外径是φOut并且内径是φin时,厚度T可以由T =(φout-φin)/ 2表示。如果永磁磁路处于多边形形状,则沿着永磁磁路上的磁极的角度是径向尺寸。\n\n【0024】\n\n本发明优选用于用于药物,化学等的特定物质或细胞分离纯化的磁性分离装置中。\n\n【发明效果】\n\n【0025】\n\n本申请的第一发明具有以下效果。\n\n1)将永磁体的磁化方向的设定相对于通过永磁体的中心部分相对于径向延伸到宽范围的20至80°。\n\n2)对于磁化方向的设定值,制造时的误差可以容忍约±10°,并且制造方便。\n\n3)无论磁极的数量如何,磁化方向都可能是恒定的,并且制造方便。\n\n4)约克是不可能的,在制造表面有利。\n\n【0026】\n\n本申请的第二发明具有以下效果。\n\n1)例如,即使在样品插入部分的直径直径为12mm的磁性分离装置中,样品插入部分的径向中的磁场梯度也可以是直径为200t的磁分离装置/ m以上,可以缩短分离时间。是。\n\n2)永磁体的磁化方向的设定可以通过永磁体的中心部分向径向延伸到宽范围。\n\n3)即使在磁化方向上的设定值中存在轻微误差,即使在磁化方向上有轻微误差,通过样本插入单元获得的空隙磁通密度也不会改变过多,因此磁化方向的误差可以使用多达±10°,因此易于制造。是。\n\n4)可以获得最大磁通密度的永磁体的磁化方向,无论磁极的数量如何,相对于径向穿过磁体的中心,易于设计,恒定在60°±5°处是恒定的。\n\n实施本发明的最佳方式\n\n【0027】\n\n在下文中,将在施加到磁场产生装置的示例中描述本发明的极端浓缩磁路,所述磁场产生装置使用具有六极磁极的圆柱形永磁体。当圆柱形磁体的内部用作磁性工作空间时,为了增加该空间的磁性梯度,可以认为内径侧表面的表面磁通量可以考虑可以考虑圆柱形磁体的轴向中心零。可以增加密度,这将在这方面描述。磁场产生装置包括磁体10,其中风扇形永磁体在环形中连接,图1示出了其平面图。该示例的磁体10是作为磁性工作空间的内径侧,并且磁体10的磁性工作表面是内周侧的表面,并且内周侧在此处,并且内部周边发生发生表面磁通密度的峰值。\n\n部分形成六极杆。磁体10在圆周方向上布置十二扇形永磁体(1a,1b,...,6a,6b),并且是环形,并且形成一个杆。所有永磁体都被磁化,使得磁化方向相对于在永磁体中设置的参考线平行于预定的倾斜角。当通过永磁体的中央部分的切线A和径向线B通过永磁体的中心部分的切线A和径向线B是特别优选的,参考线是特别优选的,但是通过永磁体的中心部分是特别优选的,但是一对永磁体C它也可以完成。\n\n【0028】\n\n磁体单元1和磁体单元2参考图1所示的磁体单元1和磁体单元2具体描述。磁体单元1包括永磁体1a和1b,并且永磁体1a以60°的角度平行地磁化到内圆周侧,到穿过永磁体的中心的径向b。磁化方向由图1中的箭头表示。在图1中,磁力线从S杆从S杆到磁体内的N杆的方向表示。永磁体1b在相对于穿过永磁体的中心部分的径向方向B的角度以60°的角度水平地磁化到内周侧。也就是说,磁体单元1在与边界线C1对称地的内周方向上磁化,以键合边界线C1为中心,并且内周部分的边界线C1的附近变为n极。在下文中,磁化方向相对于穿过永磁体的中心部分的径向B的角度也被称为倾斜角。\n\n【0029】\n\n另一方面,相邻的磁体单元2由永磁体2a和2b形成,并且永磁体2a在逆时针方向上以60°的倾斜角度朝向外周侧平行磁化。永磁体2b在顺时针方向上以60°的梯度达到外周侧的平行磁化到外周侧。也就是说,磁体单元2在面向边界线C2的外周方向上磁化,以结界线C2为中心,并且内周部分的边界线C2的附近变为S杆。依次配置相邻的磁体单元。\n\n【0030】\n\n如上所述,由于磁体单元1被引导到永磁体1A和1B边界线C1中的内周点,所以磁力线朝向边界线C1集中并引导到腔体,表面磁通密度最大化在边界线C1上。此外,由于相邻的磁体单元2面向远离永磁体2a和2b的边界线C2朝向外周,因此来自腔的磁力线被引导以集中在边界线C2上。表面磁通密度在边界线C2上最大化。此外,例如,根据永磁体2a的磁化方向,磁力线导致磁体单元2的永磁体2a与相邻的永磁体1b相对,并且从永磁体2a通过永磁体2a到永磁体如图1B所示,永磁体2a和1b几乎没有在外周表面上泄漏\n\n【0031】\n\n(例1)\n\n如果改变永磁体的磁化方向上的倾斜角度,则推测磁体单元的磁极部分中的表面磁通密度的大小将改变,但是将推断磁体单元的磁化。没有数字地解释极性部分的角度和表面磁通密度之间的关系。因此,对如何定义永磁体的磁化角来进行磁模拟以获得最大表面磁通密度。\n\n表1示出了当磁化方向的倾斜角改变为0,20,40,50,60,70和80°时的内圆周在四极的磁体中,六个极,8个极,10个极,10杆,和12个极。基于表面磁通密度峰值,表面磁通密度峰值的磁场分析和表面磁通密度峰值中的比率的磁通密度的大小。示出了0°倾斜角的值。图。图2,3和4示出了四极,8个管道和12个极的波形。 0°倾斜角的磁化方向接近径向各向异性取向的磁化方向,磁极的数量越高。\n\n【0032】\n\n【表格1】\n\n\n\n【0033】\n\n根据表1,峰的磁通密度应理解,无论极点的数量如何,观察到倾斜角度的倾斜角的最大值,并且设计倾斜角可以是60°。然而,当50°之间几乎没有差异并且在磁化方向的制造之间,磁化方向上的设计值例如为50°或55°或60°,以及任何50°至60°。它可能是一个值。当实际制造时,在永磁制作时通过对准和永磁体在磁化方向上发生误差,但如表1所示,似乎是20°和80°之间的大问题没有差异在特殊的情况下,在此期间可以使用实际的磁化方向。也就是说,即使磁化方向在一定程度上位于设计值,主磁化器也可以接受,并且易于制造。\n\n【0034】\n\n在图1和2中如图2,3和4所示,由于示出了仅常规方向部件的磁通密度的大小,因此磁极上出现峰值。然而,当观察切线分量时,磁极之间出现峰值。通过合成正方体部件的载体和切向组分的载体来确定磁场强度。可以从由此获得的磁场强度分布进一步确定磁性梯度分布。图。图5示出了内径为11mm的永磁磁路的样品插入部分中的磁梯度分布的示例。原点位于样品插入部分的中心,并显示出样品插入部分的1/4。整个磁路具有四个磁极,在图5中,在X轴上的位置和y轴上的位置处存在5.5mm的磁极。暗色的颜色是磁梯度大的区域。其特征在于具有大的磁梯度和大面积的磁极,包括磁极和磁极。这里,由于强磁吸力作用,因此在容器的壁表面上的短时间内捕获磁珠。\n\n【0035】\n\n(例2)\n\n实际上,在以下普通规格下,制造了三个平行的磁体磁铁,制造了0°,20°,60°,20°,60°,并测量表面磁通密度。波形如图2所示。\n\n1)对齐磁铁常用规格\n\n·材料ND-Fe-B,烧结磁铁\n\n·尺寸φ50×φ30×10\n\n·12杆在磁极中\n\n2)测量\n\n·测量装置高斯仪表(由Nippon电气维护有限公司制造,6800款磁铁分析仪)\n\n如图6所示,在倾斜角0°的情况下,表面磁通密度的峰值为0.45T,当倾斜角为60°时,倾斜角度为0°时,倾斜角度为0°,当参考参考为100%,它为60°的倾斜角度为178%,与表1中大约磁场分析结果相同。由此,表1中所示的磁场分析结果具有高完整性和高完整性,并且可以确定基于这的检查结果是可靠的。使用该极浓缩磁路组合具有磁性分离装置的磁性分离装置,获得能够显着降低测量时间的磁性分离装置。\n\n【0036】\n\n本发明的磁极集中磁路在施加到内圆周表面上具有磁极的环形磁体的示例中说明\n\n然而,它也适用于环形磁体,该环形磁体在外周表面上具有磁极。此外,这同样适用于平板形状或多边形磁体。此外,当磁体可以产生高磁力时,优选使用稀土烧结磁体或粘合磁体,例如ND-Fe-B系统,但它是SM-CO或铁氧体系统的磁体。它也很好。\n\n【0037】\n\n(例3)\n\n图2中示出了本发明的第二发明的第一实施例的透视图。参照图7,图7.从垂直方向上的上侧观察图8。在该实施例中,具有1A和1B的磁体单元1,2A,2B使用由ND-Fe-B烧结磁体组成的八个永磁体,以及具有一对永磁磁路的磁体单元2,3a,3b成对构成具有一对磁体单元3,4a,4b的磁体单元4和圆柱形,使得每个磁体单元的内径侧是1个磁极,并且磁极交替。9和样品插入部分6磁性材料(由SUS 430制造),由非磁性材料(由BE-Cu制造)的样品插入部分6,由非磁性材料(由铝合金制造)组成的垂直盖子7。。\n\n【0038】\n\n首先,永磁体1a,2a,3a,4a插入由SUS430制造的后轭5中。通过使用作为软磁材料的后轭5,1A,2A,3A,4A的永磁体沿吸附力Fa中的吸附力Fa中的方向被吸引到后轭5,并将其插入后轭5很容易。稳定举行。接下来,插入剩余的永磁体1B,2B,3B和4B。此时,如图2所示。例如,例如,永磁体1b相对于键合表面对称磁极的用于对称极,但是永磁体2a被吸入后轭5磁体可以轻松插入。此外,由于永磁体2a和1b通过后轭5封闭,所以当用作磁性分离装置时也执行结构稳定的磁路。\n\n【0039】\n\n另一方面,当非磁性材料用作后轭中的结构材料时,径向抑制的排斥力在轴向上起作用并且相对于轴向方向变得在结构上不稳定。也就是说,由于在组装并用作磁性分离装置时产生上述问题,因为相同的问题是非磁性背轭在轴向方向上不稳定,因此软磁性背轭是最佳的。。然后顺序地结合永久磁铁2b,3b,4b。此后,通过覆盖由BE-Cu和由铝合金制成的盖子7制成的样品插入部分6来构造磁性分离装置10。此时,磁体单元1是连接的永磁体1a和1b的组合,使得磁化方向相对于键合表面对称。在本实施例中,磁体单元被设定为一个单元,并且磁极交替地与磁性工作侧表面相反。如此组装的磁性分离装置10是磁路,其内径为12mm,外径为100mm,内径为100mm,在磁路的外周部分内,10mm厚的SUS 430后轭5和由BE-Cu制成的样品插入部分6,用于插入具有11mm的内径和厚度为0.5mm的圆柱形的圆柱形测试介质,并且通过圆柱的上表面和下表面和下表面密封由铝合金制成的盖子7。在实际使用期间,插入含有与液体分离的液体等的样品盒8,如图2所示。如果从样品插入部分挤出到致趋曲方程的大量样品壳体,则还可以进一步缩短测量时间。\n\n【0040】\n\n下面将参考图4详细描述磁体单元的配置。磁体单元1包括相邻的永磁体1a和1b。从永磁磁路9的中心观察的逆时针侧上的永磁体1a以逆时针方向的沿径向B的逆向方向上的60°的角度指向内圆周侧,沿着永久的中心部分磁铁。并联磁化。这里,内周侧是作为构成磁体单元1的其他永磁体的永磁体1B侧。从永磁磁路9的中心的视图中,沿顺时针方向侧的永磁体1b与穿过永磁体的中心部分的径向B平行于60°角的内周侧。它被磁化。这里,内周侧是构成磁体单元1的另一个永磁体的永磁体1a侧。也就是说,磁铁单元1是\n\n在粘合边界线C1上磁化磁化磁化,其表示永磁体1a和1b的接合面的位置,以及在永磁体1a和1b边界线C1上的永磁磁路9的内周表面侧上的位置。磁极N的中心形成。永磁体1a和1b不一定在结表面处彼此彼此粘合,并且如果固定地布置在紧密接触或接近时是足够的。因此,本发明中的粘合面的含义是其两个磁体彼此连接在一起,粘附或接近的表面。在下文中,磁化方向相对于穿过永磁体的中心部分的径向B的角度θ也被称为倾斜角。\n\n【0041】\n\n另一方面,与磁体单元1相邻的磁体单元2包括相邻的永磁体2a和2b。从永磁体磁路9的中心观察的逆时针侧上的永磁体2a平行于逆时针方向的60°的外周侧,到穿过永久的中心部分的径向b磁铁。它被磁化。这里,外周侧是与永磁体2B侧相对的一侧,该侧是构成磁体单元2的另一个永磁体。从永磁电路9的中心观察的顺时针侧的永磁体2b是朝向外周侧的平行磁化,相对于穿过中心的径向B以60°的角度为60°的角度永磁体。已经完成了。这里,外周侧是与构成磁体单元2的另一个永磁体的永磁体2a侧相对的一侧。也就是说,磁体单元2被磁化为在连接边界线C2上的线对称性,表示永磁体2a和2b的接合面的位置,以及永磁体2a,2b边界线C2上的永磁磁路9的位置9磁极S的中心形成在内周表面侧。相邻的磁体单元顺序地构成永磁磁路9。\n\n【0042】\n\n如上所述,磁体单元1被引导到永磁体1a和1b之间的边界,并且磁场线集中朝向边界,因此从内圆周侧产生的磁场可以更大比单个磁铁,并且在本实施例的样品插入部分6的表面上,可以获得在永磁体的BR1.4T上方的1.8T的表面磁通密度。相邻的磁体单元2被引导,使得磁化方向被引导远离永磁体2a和2b的边界朝向外周边,因此磁线被引导以集中在2a和2b之间的边界上,以及表面磁通量密度在边界线C2上的内周侧最大。此外,来自样品插入部分的中心的径向中的磁场梯度为293t / m。\n\n【0043】\n\n(例4)\n\n事实上,在以下普遍规范下,制备了实施例3中所示的磁性分离装置,并且具有0°,20°,60°的三个平行的磁化永磁体和测量的表面磁通密度。波形如图2所示。\n\n1)对齐磁铁常用规格\n\n·材料ND-Fe-B型烧结磁铁(BR1.4T,BHC1100KA / M)\n\n·尺寸φ50×φ10×10\n\n·极杆内外周\n\n2)测量\n\n·测量装置高斯仪表(由Nippon电气维护有限公司制造,6800款磁铁分析仪)\n\n如图1所示。如图10所示,在倾斜角0°的情况下,表面磁通密度的峰值为1T,当倾斜角度为60°时,它是2T,并且当0°的倾斜角设定为100时倾斜角度的百分比,倾斜的角度为60°,观察到表1中所示的磁场分析结果观察到显着效果。使用该极浓缩磁路组合具有磁性分离装置的磁性分离装置,获得能够显着降低测量时间的磁性分离装置。\n\n【0044】\n\n(例5)\n\n图2中所示的永磁磁路的内径φin之间的关系。图10中示出了外径φOut。在6,10,20mm的每个永磁体磁路中,磁体内径φin是外径φout的尺寸形状,其测量通过样品插入部分获得的最大磁通密度的值。来自图的图\n\n当内径φin等于或高于预定外径φOut时基本上获得的磁通密度是恒定的,并且磁性分离装置甚至没有大于具有进一步外径的永磁磁路的磁性分离装置。解决。图11中的虚线部分。图11表示相对于峰值的磁通密度具有97%的饱和率的外径φout。基于此,如图4所示,如图12所示,横轴是内径φin,垂直轴是永磁磁路的厚度T(T =(外径φOut内直径φin)/ 2),以及求解永磁磁磁磁铁的厚度T相对于内径φin电路的厚度T为7.0次或更小,并且可以解决可以获得足够的磁通密度。\n\n[简要描述;简介]\n\n【0045】\n\n【图1】用于说明磁体的磁化方向以证明本发明的图。\n\n【图2】通过改变磁极和磁化方向倾斜角度改变磁场分析时,示出了磁通密度的大小的图。\n\n图3.通过改变磁极和磁化方向倾斜角度改变磁场分析时,示出了磁通密度的大小的图。\n\n图4.通过改变磁极和磁化方向倾斜角度改变磁场分析时,示出了磁通密度的大小的图。\n\n图5.示出了永磁磁路的样品插入部分中的磁梯度分布的示例的图。\n\n6.图示了通过在磁化方向上改变倾斜角度而制造的磁体磁通密度的差异的图。\n\n图7.用于说明本发明的磁分离装置的立体图。\n\n图8从垂直方向上的上侧看本发明的磁分离装置的图。\n\n图9一种用于说明本发明的磁分离装置的永磁磁路的图。\n\n图10.图示了通过在磁化方向上改变倾斜角度而制造的磁体磁通密度的差异的图。\n\n11.示出了当内径和外径改变时表面磁通密度峰值的差异的图。\n\n12.示出当磁体内径改变时所需的磁铁厚度的图。\n\n[标志的说明]\n\n【0046】\n\n1,2磁铁单元\n\n1A,1B,2A,2B,3A,3B,4A,4B永磁体\n\n5返回约克\n\n6样品插入部分\n\n7封面\n\n8个样本案例\n\n9永磁磁路\n\n10磁体\n\n11磁性分离装置\n\n永磁磁铁外周宽度中心的曲折\n\nB通过永磁体的径向线\n\n永磁体形成磁体单元的C粘接边界线(关节表面)');
INSERT INTO `os_patent_instruction_text` VALUES (13041, 22870, '【技術分野】\n\n【0001】\n\n本発明は、希土類系永久磁石などの被処理物の表面にアルミニウムなどの蒸着被膜を形成する方法に関する。\n\n【背景技術】\n\n【0002】\n\nNd-Fe-B系永久磁石に代表されるR-Fe-B系永久磁石などの希土類系永久磁石は、高い磁気特性を有しており、今日様々な分野で使用されている。しかしながら、希土類系永久磁石は、大気中で酸化腐食されやすい金属種(特にR)を含む。それ故、表面処理を行わずに使用した場合には、わずかな酸やアルカリや水分などの影響によって表面から腐食が進行して錆が発生し、それに伴って、磁気特性の劣化やばらつきを招くことになる。さらに、磁気回路などの装置に組み込んだ磁石に錆が発生した場合、錆が飛散して周辺部品を汚染する恐れがある。以上の点に鑑み、希土類系永久磁石に優れた耐食性を付与することを目的として、その表面にアルミニウムや亜鉛などの金属蒸着被膜を形成することが行われている。特に、アルミニウム被膜は、耐食性や量産性に優れていることに加え、部品組み込み時に必要とされる接着剤との接着信頼性に優れている(接着剤が本質的に有する破壊強度に達するまでに被膜と接着剤との間で剥離が生じにくい)ので、強い接着強度が要求される希土類系永久磁石に対しても広く適用されている。\n\n【0003】\n\n希土類系永久磁石の表面に金属蒸着被膜を形成するために使用される、真空処理室内に、蒸着材料の蒸発部と、その表面に蒸着材料が蒸着される被処理物を収容するための多孔性周面を有する筒型バレルを備え、筒型バレルを横設して水平方向の回転軸線を中心に回転させながら被処理物の表面に蒸着材料を蒸着させる蒸着被膜形成装置としては、例えば、特許文献1に記載の装置がある。図1は、その一例の、図略の真空排気系に連なる真空処理室1の内部の模式的正面図(一部透視図)である。その室内上方には、水平方向の回転軸線上の回転シャフト6を中心に回転自在とした支持部材7が2個併設されており、この支持部材7の回転シャフト6の周方向の外方に6個のステンレス製のメッシュ金網で形成された円筒形バレル5が支持軸8によって公転自在に環状に支持されている(図2は円筒形バレル5の一例を示す模式的斜視図であり、図3は支持部材7に支持された円筒形バレル5の一例を示す模式的斜視図である)。また、その室内下方には、蒸着材料であるアルミニウムを蒸発させる蒸発部であるボート2が、支持テーブル3上に立設されたボート支持台4上に複数個配置されている。支持テーブル3の下方内部には、蒸着材料であるアルミニウムのワイヤー9が繰り出しリール10に巻回保持されている。アルミニウムワイヤー9の先端はボート2の内面に向かって臨ませた耐熱性の保護チューブ11によってボート2の上方に案内されている。保護チューブ11の一部には切り欠き窓12が設けられており、この切り欠き窓12に対応して設けられた繰り出しギア13がアルミニウムワイヤー9に直接接触し、アルミニウムワイヤー9を繰り出すことによってボート2内にアルミニウムが絶えず供給されるように構成されている。そして、この装置によれば、被処理物である希土類系永久磁石30を円筒形バレル5内に多数収容し、矢示のごとく回転シャフト6を中心に支持部材7を回転させると、支持部材7の回転シャフト6の周方向の外方に支持軸8によって支持されている円筒形バレル5は、これに対応して、回転シャフト6を中心に公転運動し、図略の加熱手段によって所定温度に加熱されたボート2から蒸発させたアルミニウムが、円筒形バレル5内の希土類永久磁石30の表面に蒸着され、アルミニウム被膜が形成される。\n\n【特許文献1】特開2001-335921号公報\n\n【発明の開示】\n\n【発明が解決しようとする課題】\n\n【0004】\n\n図1に示す蒸着被膜形成装置は、大量処理が可能であり、生産性に優れたものである。しかしながら、希土類系永久磁石のサイズが大きくなると(例えば縦40mm×横15mm×厚み5mmを超えるような板状磁石)、時として、蒸着被膜形成時に、磁石の欠けや、いったん形成された蒸着被膜の磁石からのはがれ(被膜ハガレ)が顕著となり、生産性の悪化を引き起こす場合がある。\n\nそこで本発明は、サイズの大きい被処理物に対しても、被処理物の欠けや被膜ハガレの発生率を抑えて、その表面に蒸着被膜を効率的に形成することができる、蒸着被膜形成方法を提供することを目的とする。\n\n【課題を解決するための手段】\n\n【0005】\n\n本発明者らは、上記の点に鑑みて鋭意研究を重ねた結果、図1に示す蒸着被膜形成装置を用いて被処理物の表面に蒸着被膜を形成する際、円筒形バレル内に金属製スプリング部材を多数収容するか、円筒形バレル内に金属製スプリングをテンションを付加して架設することで、円筒形バレル内での被処理物の自由運動を制御することにより、被処理物の欠けや被膜ハガレの発生率を抑えて、その表面に蒸着被膜を効率的に形成することができることを見出した。\n\n【0006】\n\n上記の知見に基づいてなされた本発明の蒸着被膜形成方法は、請求項1記載の通り、真空処理室内に、蒸着材料の蒸発部と、その表面に蒸着材料が蒸着される被処理物を収容するための多孔性周面を有する筒型バレルを備え、筒型バレルを横設して水平方向の回転軸線を中心に回転させながら被処理物の表面に蒸着材料を蒸着させる蒸着被膜形成装置を用いた蒸着被膜形成方法であって、被処理物と金属製スプリング部材を、筒型バレル内にそれぞれ多数収容し、被処理物の表面に蒸着材料を蒸着させることを特徴とする。\n\nまた、本発明の蒸着被膜形成方法は、請求項2記載の通り、真空処理室内に、蒸着材料の蒸発部と、その表面に蒸着材料が蒸着される被処理物を収容するための多孔性周面を有する筒型バレルを備え、筒型バレルを横設して水平方向の回転軸線を中心に回転させながら被処理物の表面に蒸着材料を蒸着させる蒸着被膜形成装置を用いた蒸着被膜形成方法であって、金属製スプリングをテンションを付加して架設した筒型バレル内に、被処理物を多数収容し、被処理物の表面に蒸着材料を蒸着させることを特徴とする。\n\nまた、請求項3記載の蒸着被膜形成方法は、請求項1または2記載の蒸着被膜形成方法において、蒸着材料がアルミニウムであることを特徴とする。\n\nまた、請求項4記載の蒸着被膜形成方法は、請求項1乃至3のいずれかに記載の蒸着被膜形成方法において、被処理物が板状体であることを特徴とする。\n\nまた、請求項5記載の蒸着被膜形成方法は、請求項1乃至4のいずれかに記載の蒸着被膜形成方法において、被処理物が希土類系永久磁石であることを特徴とする。\n\n【発明の効果】\n\n【0007】\n\n本発明によれば、サイズの大きい被処理物に対しても、被処理物の欠けや被膜ハガレの発生率を抑えて、その表面に蒸着被膜を効率的に形成することができる、蒸着被膜形成方法を提供することができる。\n\n【発明を実施するための最良の形態】\n\n【0008】\n\nまず、本発明の第一の蒸着被膜形成方法について説明する。この方法は、真空処理室内に、蒸着材料の蒸発部と、その表面に蒸着材料が蒸着される被処理物を収容するための多孔性周面を有する筒型バレルを備え、筒型バレルを横設して水平方向の回転軸線を中心に回転させながら被処理物の表面に蒸着材料を蒸着させる蒸着被膜形成装置を用いた蒸着被膜形成方法であって、被処理物と金属製スプリング部材を、筒型バレル内にそれぞれ多数\n\n収容し、被処理物の表面に蒸着材料を蒸着させることを特徴とする。以下に、この方法の一例を、図面を用いながら説明する。\n\n【0009】\n\n図4は、被処理物とともに筒型バレル内に収容する、金属製スプリング部材の一例の模式的側面図である。筒型バレル内に収容する金属製スプリング部材は、被処理物と略同一大とすることが望ましい。筒型バレル内での被処理物の自由運動を適度に制御する緩衝部材としての機能を発揮させるのに好都合であり、被処理物の欠けや被膜ハガレの発生率を抑えて、その表面に蒸着被膜を効率的に形成することができるからである。例えば、被処理物の体積を1とした場合、金属製スプリング部材の体積(外接円筒の体積と見なすことができる)が0.5〜2.5であれば、金属製スプリング部材は被処理物と略同一大であるとすることができる。図5は、被処理物とともに筒型バレル内に収容する、金属製スプリング部材のその他の例の模式的側面図である。この金属製スプリング部材は、部材を構成する線状材の一部にスプリングを巻回したものである。\n\n【0010】\n\n図6は、例えば、被処理物である板状の希土類系永久磁石30と金属製スプリング部材31を、それぞれ多数収容した円筒形バレル5内の模式的部分拡大斜視図である。円筒形バレル5内への磁石30と金属製スプリング部材31の収容個数は、磁石30を100個とした場合、金属製スプリング部材31は90個〜110個とすることが望ましい。両者をこのような比率で円筒形バレル5内に収容することで、円筒形バレル5内での磁石30の自由運動が適度に制御され、磁石30の欠けや被膜ハガレの発生率を抑えて、その表面に蒸着被膜を効率的に形成することができる。\n\n【0011】\n\n次に、本発明の第二の蒸着被膜形成方法について説明する。この方法は、真空処理室内に、蒸着材料の蒸発部と、その表面に蒸着材料が蒸着される被処理物を収容するための多孔性周面を有する筒型バレルを備え、筒型バレルを横設して水平方向の回転軸線を中心に回転させながら被処理物の表面に蒸着材料を蒸着させる蒸着被膜形成装置を用いた蒸着被膜形成方法であって、金属製スプリングをテンションを付加して架設した筒型バレル内に、被処理物を多数収容し、被処理物の表面に蒸着材料を蒸着させることを特徴とする。以下に、この方法の一例を、図面を用いながら説明する。\n\n【0012】\n\n図7は、例えば、4本の金属製スプリング32を両端面間にテンションを付加して架設した円筒形バレル5の模式的斜視図であり、図8は、被処理物である板状の希土類系永久磁石30を多数収容したこの円筒形バレル5内の模式的部分拡大斜視図である。このような構成とすることで、金属製スプリング32の存在により、円筒形バレル5内での磁石30の自由運動が適度に制御され、磁石30の欠けや被膜ハガレの発生率を抑えて、その表面に蒸着被膜を効率的に形成することができる。\n\n【0013】\n\n本発明の蒸着被膜形成方法を適用することができる被処理物は、特に限定されるものではなく、蒸着処理によって蒸着被膜の形成が可能なものであればどのようなものでも構わない。しかしながら、本発明の蒸着被膜形成方法は、縦40mm×横15mm×厚み5mmを超えるような板状の希土類系永久磁石や、単重が20gを超えるような弓形の希土類系永久磁石などの、サイズの大きい希土類系永久磁石の表面に、膜厚が1μm〜15μmの蒸着被膜を形成する際などに特に適している。\n\n【0014】\n\nまた、本発明の蒸着被膜形成方法は、真空蒸着法のように蒸着材料を単に加熱によって蒸発させて蒸着被膜を形成する場合にも適用することができるし、例えば、イオンプレーティング法のように蒸発したものをイオン化させて蒸着被膜を形成する場合にも適用することができる。\n\n【0015】\n\nまた、本発明の蒸着被膜形成方法は、金属やその合金などの蒸着材料を用いた蒸着被膜\n\n形成に適用することができるが、中でも、軟質金属や軟質金属成分を含む合金、例えば、アルミニウム、亜鉛、錫、マグネシウム、これらの金属成分の少なくとも1成分を含む合金などを使用した蒸着被膜形成に好適に適用することができる。\n\n【0016】\n\nまた、本発明の蒸着被膜形成方法を実施するために使用される、真空処理室内に、蒸着材料の蒸発部と、その表面に蒸着材料が蒸着される被処理物を収容するための多孔性周面を有する筒型バレルを備え、筒型バレルを横設して水平方向の回転軸線を中心に回転させながら被処理物の表面に蒸着材料を蒸着させる蒸着被膜形成装置としては、図1に示した装置の他、例えば、米国特許4116161号公報やGraham Legge :\"Ion VaporDeposited Coatings for Improved Corrosion Protection\": Reprinted from Industrial Heating, September, 135-140, 1994に記載の装置が挙げられる。図9は、その一例の、図略の真空排気系に連なる真空処理室101の内部の模式的正面図(一部透視図)である。その室内上方には、例えば、ステンレス製のメッシュ金網で形成された円筒形バレル105が水平方向の回転軸線上の回転シャフト106を中心に回転自在に2個併設されている。また、その室内下方には、蒸着材料であるアルミニウムを蒸発させる蒸発部であるボート102が、支持テーブル103上に立設されたボート支持台104上に複数個配置されている。そして、この装置によれば、被処理物である希土類系永久磁石130を円筒形バレル105内に多数収容し、この円筒形バレルを矢示のごとく回転シャフト106を中心に回転させながら、図略の加熱手段によって所定温度に加熱されたボート102からアルミニウムを蒸発させることで、円筒形バレル105内の希土類永久磁石130の表面にアルミニウム被膜が形成される。\n\n【実施例】\n\n【0017】\n\n以下、本発明を実施例と比較例によってさらに詳細に説明するが、本発明はこれに限定して解釈されるものではない。なお、以下の実施例と比較例は、例えば、米国特許4770723号公報や米国特許4792368号公報に記載されているようにして、公知の鋳造インゴットを粉砕し、微粉砕後に成形、焼結、熱処理、表面加工を行うことによって得られた14Nd-79Fe-6B-1Co組成(at%)の縦42mm×横18mm×厚み6mmで単重36gの板状焼結磁石(以下、磁石体試験片と称する)を用いて行った。\n\n【0018】\n\n実施例1:\n\n図2に示したような、直径110mm×長さ575mmのステンレス製のメッシュ金網で形成された円筒形バレル内に、磁石体試験片80個と、直径15mm×長さ20mmのステンレス製スプリング部材(磁石体試験片の体積を1とした場合の体積は0.8)80個を収容し、図1に示した蒸着被膜形成装置により、磁石体試験片の表面にアルミニウム被膜を形成した(円筒形バレルの装置への装着方法は図3に示した方法を採用したことから、装置全体では24個の円筒形バレルを装着したので、一度に処理した磁石体試験片の総数は1920個である)。なお、蒸着条件は、蒸着時間35分、円筒形バレル回転数4.7rpmとした。\n\n【0019】\n\n実施例2:\n\n図7に示したような、4本の直径15mmのステンレス製スプリングを、両端面間にテンションを付加して架設した、直径110mm×長さ575mmのステンレス製のメッシュ金網で形成された円筒形バレル内に、磁石体試験片80個を収容し、図1に示した蒸着被膜形成装置により、磁石体試験片の表面にアルミニウム被膜を形成した(円筒形バレルの装置への装着方法は図3に示した方法を採用したことから、装置全体では24個の円筒形バレルを装着したので、一度に処理した磁石体試験片の総数は1920個である)。なお、蒸着条件は、実施例1と同様の条件とした。\n\n【0020】\n\n比較例:\n\n図2に示したような、直径110mm×長さ575mmのステンレス製のメッシュ金網で形成された円筒形バレル内に、磁石体試験片80個を収容し、図1に示した蒸着被膜形成装置により、磁石体試験片の表面にアルミニウム被膜を形成した(円筒形バレルの装置への装着方法は図3に示した方法を採用したことから、装置全体では24個の円筒形バレルを装着したので、一度に処理した磁石体試験片の総数は1920個である)。なお、蒸着条件は、実施例1と同様の条件とした。\n\n【0021】\n\n評価項目とその結果:\n\n実施例1、実施例2、比較例それぞれについて、磁石体試験片の表面に形成されたアルミニウム被膜の膜厚(n=10:断面観察による)を表1に示す。また、アルミニウム被膜が表面に形成された磁石体試験片10000個について調べた、磁石体試験片の欠けと被膜ハガレの発生率と、磁石体試験片の欠けと被膜ハガレが認められず良品と判断されたアルミニウム被膜が表面に形成された磁石体試験片に対するプレッシャークッカ試験(PCT試験:条件は温度125℃×相対湿度85%×2atmの環境下に60時間放置)の結果(n=5)を表1に示す。\n\n【0022】\n\n【表1】\n\n\n\n【0023】\n\n表1から明らかなように、実施例1と実施例2で得られたアルミニウム被膜が表面に形成された磁石体試験片は、比較例で得られたアルミニウム被膜が表面に形成された磁石体試験片よりも、磁石体試験片の欠けと被膜ハガレの発生率が大幅に減少しており、実施例1と実施例2の蒸着被膜形成方法は、優れた方法であることがわかった。\n\n【産業上の利用可能性】\n\n【0024】\n\n本発明は、サイズの大きい被処理物に対しても、被処理物の欠けや被膜ハガレの発生率を抑えて、その表面に蒸着被膜を効率的に形成することができる、蒸着被膜形成方法を提供することができる点において産業上の利用可能性を有する。\n\n【図面の簡単な説明】\n\n【0025】\n\n【図1】本発明の蒸着被膜形成方法を実施するための蒸着被膜形成装置の一例の真空処理室の内部の模式的正面図(一部透視図)である。\n\n【図2】円筒形バレルの一例を示す模式的斜視図である。\n\n【図3】支持部材に支持された円筒形バレルの一例を示す模式的斜視図である。\n\n【図4】被処理物とともに筒型バレル内に収容する金属製スプリング部材の一例の模式的側面図である。\n\n【図5】同、その他の例の模式的側面図である。\n\n【図6】被処理物である板状の希土類系永久磁石と金属製スプリング部材を、それぞれ多数収容した円筒形バレル内の模式的部分拡大斜視図である。\n\n【図7】4本の金属製スプリングを両端面間にテンションを付加して架設した円筒形バレルの模式的斜視図である。\n\n【図8】被処理物である板状の希土類系永久磁石を多数収容した図7の円筒形バレル内の模式的部分拡大斜視図である。\n\n【図9】本発明の蒸着被膜形成方法を実施するための蒸着被膜形成装置のその他の例の真空処理室の内部の模式的正面図(一部透視図)である。\n\n【符号の説明】\n\n【0026】\n\n1,101    真空処理室\n\n2,102    ボート\n\n3,103    支持テーブル\n\n4,104    ボート支持台\n\n5,105    円筒形バレル\n\n6,106    回転シャフト\n\n7    支持部材\n\n8    支持軸\n\n9    アルミニウムワイヤー\n\n10    繰り出しリール\n\n11    保護チューブ\n\n12    切り欠き窓\n\n13    ギア\n\n30,130    希土類系永久磁石\n\n31    金属製スプリング部材\n\n32    金属製スプリング', '【技术领域】\n\n【0001】\n\n本发明涉及一种在待处理的物体表面上形成诸如铝的气相沉积膜的方法,例如稀土永磁体。\n\n发明背景\n\n【0002】\n\n基于稀土的永磁体,例如由ND-Fe-B基永磁体表示的R-Fe-B永磁体,具有高磁性,并在今天的各个领域中使用。然而,稀土基永磁体包括金属物种(尤其是R),其在大气中易于氧化腐蚀。因此,当使用时无表面处理时,由于轻微酸,碱或湿度的影响,导致锈蚀,因此,耐磁性可能会劣化和变化,腐蚀从表面进行。它会是劣化和变化。它将是。此外,如果在诸如磁路的装置中的磁体中发生生锈,则锈蚀可以散布到污染的外围部件。鉴于上述点,实践以在表面上形成金属气相沉积薄膜,例如铝或锌,以赋予稀土基永磁体在稀土基永磁体中优异的耐腐蚀性。特别地,铝膜具有优异的耐腐蚀性和质量生产率,并且具有在部件掺入时所需的粘合剂的粘合可靠性优异(在粘合剂基本上在粘合剂的断裂强度之前,因为剥离不太可能发生粘合剂涂层和粘合剂),广泛应用于需要强粘合强度的稀土永磁体。\n\n【0003】\n\n孔隙率以容纳沉积材料的蒸发部分和沉积材料在稀土基永磁体的表面上沉积在金属气相沉积膜的表面上的物体。作为气相沉积膜形成装置,包括包括具有圆周表面并振动圆柱形筒的圆柱形筒并蒸汽沉积气相沉积材料,同时围绕水平旋转轴旋转,例如,在文献1中有一种装置。图。图1是与示例的示例的示例的真空排气系统连接的真空处理室1的示意性正视图(局部透视图)。在房间处,两个支撑构件7与两个可旋转支撑构件7组合在水平方向上的旋转轴上以旋转轴6定心在旋转轴上,并且在支撑构件的旋转轴6的圆周方向上呈现6个由由单独的不锈钢制成的网状网网形成的筒5由支撑轴8环形地支撑(图2是表示圆柱形筒5的一例的示意性透视图。图3是示意性的透视图,示出了示意图由支撑构件7支撑的圆柱形筒5的示例。此外,在房间下方,是蒸发铝的蒸发部分的多个船2设置在支撑台3上竖立的船支撑件4上。在支撑台3的下侧,由进料卷轴10保持铝的导线9,其是气相沉积材料。铝线9的尖端通过耐热保护管11在船2上方被引导,该耐热保护管11朝向舟皿2的内表面。保护管11的一部分设置有凹口窗口12,并且设置与凹口窗12相对应的展开齿轮13接触铝线9并使铝线9执行铝线9.持续供应铝。铝不断供应在2。然后,根据该装置,作为待处理物体的大量稀土永磁体30容纳在圆柱形镜筒5中,并且支撑构件7绕旋转轴6旋转,如箭头所示,支撑构件7在旋转轴6的圆周方向上由支撑轴8支撑的圆柱形筒5对应于旋转轴6,并且旋转轴6在旋转轴6周围打开,并且温度是铝的蒸发加热的舟皿2沉积在圆柱形筒5中的稀土永磁体30的表面上以形成铝涂层。\n\n专利文献1:APHN 2001-335921\n\n发明的描述\n\n本发明要解决的问题\n\n【0004】\n\n图2中所示的气相沉积膜形成装置包括:1是大量的加工,并且生产率优异。然而,当稀土基永磁体的尺寸增加时(例如,板状磁铁,例如40mm长×15mm宽),有时在形成气相沉积涂层时,碎涂层一旦从磁体上普通(涂覆牙龈)形成磁体和气相沉积涂层变得显着,这可能导致生产率的劣化。\n\n因此,本发明还可以通过抑制加工产品的碎裂和入射,沉积涂层,即使相对于具有大尺寸的物体,也可以在表面上形成气相沉积涂层。涂层朴实。它旨在提供。\n\n[解决问题的手段]\n\n【0005】\n\n鉴于上述点,本发明人具有密集研究,以及在使用图1所示的气相沉积膜形成装置的待处理物体表面上形成气相沉积膜。如图1所示,金属由金属制成在圆柱形筒中。通过设定大量的弹簧构件或通过将金属弹簧添加到圆柱形桶中,通过控制在圆柱形筒中处理物体的自由运动来处理缺少工件。它有发现可以通过抑制涂层岩板的出现速率在表面上有效地形成蒸发涂层。\n\n【0006】\n\n3.根据权利要求1所述的基于上述发现所制定的本发明的沉积膜形成方法,并且气相沉积材料的蒸发部分包含在真空处理室中,以及气相沉积材料的物体沉积在表面上。一种气相沉积膜形成装置,包括具有用于各个多孔外周表面的圆柱形镜筒,并且在穿过圆柱形镜筒并旋转围绕待处理物体的表面上蒸汽沉积的气相沉积材料。在水平方向上的旋转轴。其特征在于,大量的沉积膜和金属弹簧构件容纳在圆柱形筒中,并且气相沉积材料沉积在待处理的物体的表面上。\n\n此外,本发明的沉积膜形成方法如根据权利要求2所述的呼吸外周,以适应气相沉积材料的蒸发部分和气相沉积材料在表面上沉积的物体。真空处理室。使用气相沉积膜形成装置形成气相沉积膜的方法,该气相沉积膜形成装置包括具有表面的圆柱形筒并振动圆柱形镜筒并蒸汽沉积气相沉积材料,同时在水平方向上绕旋转轴旋转。并且,通过将金属弹簧添加到安装在圆柱形筒上的圆柱形筒中容纳在组装的圆柱形筒中,并且在待处理物体的表面上沉积气相沉积材料的圆柱形筒中。\n\n另外,根据权利要求3的沉积膜形成方法的特征在于,根据权利要求1或2的气相沉积膜形成方法是铝。\n\n此外,根据权利要求4的沉积膜形成方法的特征在于,在根据权利要求1至3中任一项的形成沉积膜的方法中,待处理的物体是板状主体。\n\n此外,根据权利要求5的气相沉积膜形成方法的特征在于,根据权利要求1至4中任一项所述的沉积成膜方法,其中,待处理的物体是稀土永磁体。\n\n【发明效果】\n\n【0007】\n\n根据本发明,即使关于待处理的大尺寸,也可以有效地在表面上形成气相沉积膜形成,抑制待处理物体的框架或涂层噬菌体的发生率,并且可以有效地形成气相沉积涂层。可以提供方法。\n\n实施本发明的最佳方式\n\n【0008】\n\n首先,将描述形成本发明第一气相沉积膜的方法。该方法包括具有多孔外周表面的圆柱形筒,用于容纳气相沉积材料的蒸发部分到真空处理室中,以及用于在其表面上接收气相沉积材料的多孔外周表面,以及圆柱形镜筒气相沉积使用气相沉积膜形成装置的成膜方法,用于在待处理的物体的表面上沉积气相沉积材料,同时围绕水平方向的旋转轴线,待处理的物体和金属弹簧构件是许多圆柱桶\n\n其特征在于,气相沉积材料沉积在待处理的物体的表面上。在下文中,将参考附图描述该方法的示例。\n\n【0009】\n\n图。图4是金属弹簧构件的示例的示意性侧视图,该金属弹簧构件的示例包括待处理物体的圆柱形镜筒。期望容纳在圆柱形筒中的金属弹簧构件与待处理的物体基本相同。表现为缓冲构件的功能方便地适当地控制在圆柱形筒中待处理的物体的自由运动,并沉积缺乏工件和涂覆牙护的入射并沉积在表面上。这是因为可以有效地形成涂层。例如,当待处理的物体的体积为1时,如果金属弹簧构件的体积(可以被认为是外接圆柱的体积)为0.5至2.5,则金属弹簧构件基本相同要治疗的对象。可以说是。图。图5是金属弹簧构件的另一个例子的示意性侧视图,其与待处理的物体在圆柱形筒中容纳在圆柱形筒中。该金属弹簧构件是弹簧的卷绕成构成构件的线性构件的一部分。\n\n【0010】\n\n图。图6是板状稀土永磁体30的示意性局部放大透视图和金属弹簧构件31,金属弹簧构件31例如是待处理的物体,以及大量的金属弹簧构件31。当磁筒5中的磁体30和金属弹簧构件31设定为100个磁体30时,希望金属弹簧构件31为90至110。通过以这样的比率在圆柱形筒5中容纳,磁体30在圆柱形筒5中的自由移动是适度控制的,并且抑制了磁体30的缺失和涂覆牙护的入射,气相沉积膜可以是高效形成在表面上。\n\n【0011】\n\n接下来,将描述本发明的第二沉积膜形成方法。该方法包括具有多孔外周表面的圆柱形筒,用于容纳气相沉积材料的蒸发部分到真空处理室中,以及用于在其表面上接收气相沉积材料的多孔外周表面,以及圆柱形镜筒气相沉积使用气相沉积膜形成装置的成膜方法,用于将气相沉积材料沉积到蒸汽沉积在物体的表面上,以沉积在待处理的物体的表面上,同时围绕水平旋转轴和金属通过加入张力来添加弹簧。其特征在于,待处理的大量物体容纳在圆柱形筒中并蒸汽沉积在待处理的物体的表面上。在下文中,将参考附图描述该方法的示例。\n\n【0012】\n\n图。图7是通过在两个端面之间的四个金属弹簧32中加入固化来组装的圆柱形筒5的示意性透视图,例如,在两个端面之间。图8是作为物体的板状稀土被治疗。图1是包含大量系统永磁体30的该圆柱形筒5的示意性局部扩展透视图。利用这种配置,通过金属弹簧32的存在,磁体30在圆柱形筒5中的自由移动,并且抑制了磁体30的缺失和涂覆牙护的入射。气相沉积薄膜可以有效形成在表面上。\n\n【0013】\n\n待处理的物体可以应用于本发明的沉积膜形成方法没有特别限制,并且可以是可以通过气相沉积工艺形成气相沉积膜的任何一种。然而,本发明的沉积膜形成方法是板状稀土永磁体,例如具有40mm×15mm宽×5mm宽的厚度的板,以及诸如的方形稀土永磁体20g单级,特别适用于在大稀土永磁体的表面上形成厚度为1μm至15μm的气相沉积涂层。\n\n【0014】\n\n此外,本发明的沉积膜形成方法可以施加到通过加热和形成气相蒸镀方法的气相沉积材料的情况,例如,如离子电镀方法一样也可以应用于蒸发物被电离以形成气相沉积膜的情况。\n\n【0015】\n\n另外,本发明的沉积膜形成方法是使用沉积材料如金属或其合金的气相沉积膜。\n\n虽然它可以应用于形成,其中含有软金属或软金属组分的合金,例如,含有铝,锌,锡,镁和这些金属部件的至少一种组分的合金。它可以适用。\n\n【0016】\n\n另外,在真空处理室中,用于执行本发明的沉积膜形成方法,气相沉积材料的蒸发部分和多孔周边地容纳沉积气相沉积材料的物体表面。作为一种蒸汽涂覆的成膜装置,包括具有表面的圆柱形筒并振动圆柱形镜筒并在水平方向上旋转绕旋转轴的同时蒸汽沉积气相沉积材料,如图2所示。1在除了设备之外,例如,美国专利。美国专利4,116,161和Graham Promge:\"离子vapordeposited涂料,用于改进的腐蚀保护*:从工业加热,9月135-140,1994中转载。它是提到的。图。图9是与示例示例的示例的真空排气系统连接的真空处理室101的示意性正视图(局部透视图)。例如,在房间,例如,由不锈钢网网形成的两个圆柱形筒105可在水平方向上围绕旋转轴106旋转地连接。此外,在房间下方,是蒸发铝的蒸发部件的多个船102,布置在支撑台103上的船支撑件104上。然后,根据该装置,作为待处理物体的大量稀有的基于地球的永磁体130容纳在圆柱形筒105中,并且圆柱形筒围绕旋转轴106旋转,如箭头所示,和通过通过加热装置从加热到预定温度的舟皿102蒸发铝,在圆柱形筒105中形成铝膜在圆柱形筒105的表面上。\n\n【例子】\n\n【0017】\n\n在下文中,将通过实施例和比较例更详细地描述本发明,但是本发明不限于此。在以下实施例和比较例中,如美国专利No.4,522,517中所述,如美国专利No.美国专利No.美国专利号4,770,723和美国专利No.4,792,368中所述,如美国专利No.美国专利No.4,792,368。美国专利No.4,792,368。通过进行表面处理而获得的厚度为42mm×宽度的42mm×宽度的磁型试验片。我已经使用了)。\n\n【0018】\n\n例1:\n\n一种不锈钢弹簧构件,直径为110mm×长度为110mm×长度为110mm×长度为575mm的直径,在由575mm网格网络形成的圆柱形筒中,一个直径为15mm×长度的不锈钢弹簧构件20mm(磁体测试件的体积为1)80)容纳80),并且图1所示的沉积膜形成装置包括:1在磁体型试验片的表面上形成了铝膜(自该方法以来圆柱形桶附接到所采用的装置采用图3中所示的方法。如图3所示,在整个装置中连接了24个圆柱筒,因此在一次待处理的磁体样本的总数为1920)。气相沉积条件为35分钟气相沉积时间和4.7rpm的圆柱形筒转速。\n\n【0019】\n\n例2:\n\n由10mm直径的不锈钢弹簧形成的圆柱形筒,其已经在两个端面之间的张力组装,如图2所示,如图7所示,容纳80个磁体试验片,铝膜通过图1所示的气相沉积膜形成装置形成在磁体型试验片的表面上。图1中所示的附接到圆柱形筒装置的方法。由于采用了所示的方法,附着24个圆柱形桶在整个设备中,因此一次处理的磁铁样本的总数为1920)。另外,气相沉积条件与实施例1相同。\n\n【0020】\n\n比较例子:\n\n由图1中的直径为110mm×长度为575mm的不锈钢网网形成的圆柱形筒。(将圆柱形镜筒的方法连接到圆柱形筒的装置的方法被采用作为图2所示的方法。如图3所示,作为附着图3所示的方法的方法,作为图3所示的方法。如图3所示的方法采用了3),因此在一次处理的磁体样本的总数为1920)。另外,气相沉积条件与实施例1相同。\n\n【0021】\n\n评估项目和结果:\n\n表1显示了在实施例1,实施例2和比较例中的每一个在磁体型试验片的表面上形成的铝膜的膜厚度(n = 10:横截面观察)。此外,磁铁样本的碎裂和涂层牙龈的发生率和铝膜的涂层牙护缺乏,用于铝膜的表面,以及粘土试验片和薄膜的碎片姿势未被识别和判断为非缺陷产品。压力CUCECA测试用于在表面表1上形成铝涂层的磁铁试验条。\n\n【0022】\n\n【表格1】\n\n\n\n【0023】\n\n从表1中明显看出,在表面上形成实施例1和实施例2中获得的铝膜的磁体型试验片是磁体试验,其中在表面上形成在比较例中获得的铝涂层。它有已发现,从该部件显着降低薄膜的脆弱和涂料胡椒的发生率,实施例1和实施例2的沉积膜形成方法是优异的方法。\n\n【工业可用性】\n\n【0024】\n\n本发明还具有气相沉积膜形成方法,其可以有效地在表面上形成气相沉积涂层,甚至相对于尺寸大的物体,抑制要处理的物体的脆性或涂层的发生率Phagle,并且可以有效地形成气相沉积膜。提供工业可用性,因为它可以提供。\n\n[简要描述;简介]\n\n【0025】\n\n【图1】图3是用于执行本发明的沉积膜形成方法的气相沉积膜形成装置的实例的真空处理室的示意性正视图(局部透视图。\n\n【图2】图3是示出圆柱形筒的示例的示意性透视图。\n\n图3.图3是示出由支撑构件支撑的圆柱形筒的示例的示意性立体图。\n\n图4.图3是金属弹簧构件的示例的示意性侧视图,该金属弹簧构件的容纳在圆柱形镜筒中,其具有待处理的物体。\n\n图5.图3是另一个例子的示意性侧视图。\n\n6.图3是板状稀土永磁体的示意性部分膨胀的透视图,其是待处理的物体和金属弹簧构件,其容纳大量大量。\n\n图7.图2是通过在两个端面与四个金属弹簧之间添加张力来组装的圆柱形筒的示意性透视图。\n\n图8图3是图7的圆柱形筒中的示意性局部膨胀透视图。图7的容纳大量的板状稀土永磁体,该稀土永磁体是待处理的物体。\n\n图9图3是用于执行本发明的气相沉积膜形成方法的气相沉积膜形成装置的另一个例子的真空处理室的示意性正视图(局部透视图)。\n\n[标志的说明]\n\n【0026】\n\n1,101真空处理室\n\n2,102艘船\n\n3,103个支持表\n\n4,104艘船支撑\n\n5,105圆柱形桶\n\n6,106旋转轴\n\n7支持成员\n\n8支撑轴\n\n9铝线\n\n10拒绝卷轴\n\n11保护管\n\n12个缺口窗口\n\n13档\n\n30,130稀土基永磁体\n\n31金属弹簧构件\n\n32金属弹簧');
INSERT INTO `os_patent_instruction_text` VALUES (13042, 22871, '【技術分野】\n\n【0001】\n\n本発明は、周期磁場を形成するための第1磁気回路と、この第1磁気回路を支持するための第1支持体と、第1磁気回路に対向配置され、周期磁場を形成するための第2磁気回路と、この第2磁気回路を支持するための第2支持体と、対向配置される第1磁気回路と第2磁気回路の間に形成され、電子ビームが通過するための空間部と、第1磁気回路と第2磁気回路とを真空封止する真空槽とを備えた挿入光源に関するものである。\n\n【背景技術】\n\n【0002】\n\n真空中において光速近くまで加速された電子ビームが磁場中で曲げられると、電子ビームの移動軌跡の接線方向に放射光を発光し、これをシンクロトロン放射光と呼んでいる。このシンクロトロン放射光を発生する光源を、電子貯蔵リング(電子ビーム蓄積リング)の直線部に設置し、高指向性、高強度、高偏光性等の特性を生かした種々の技術の実用化のための研究が行われている。今日の電子貯蔵リングには、より高いビーム電流、より小さなビーム断面積、より高いビーム指向性による高輝度光源である挿入光源(アンジュレータ)が多数設けられている。\n\n【0003】\n\nこの挿入光源は、例えば、下記特許文献1や非特許文献1,2に見られるように、電子ビームが通過する周期磁場を形成するために、第1磁気回路と第2磁気回路とを空間部を介して対向配置させた構成を採用している。周期磁場を形成するために、第1·第2磁気回路は多数の永久磁石を並べて構成される。強い磁場を構成しようとする場合は、第1磁気回路と第2磁気回路をできるだけ近づければ、空間部の間隔(いわゆるギャップ)を狭くできるので磁場の強さも大きくなる。そのために、第1磁気回路と第2磁気回路を真空槽で封止する構成を採用している。第1磁気回路と第2磁気回路の間に真空槽を設ける構成に比べると、ギャップを狭くすることができるという利点を有している。\n\n【0004】\n\nしかしながら、上記のような構成でギャップを狭くするにしても、永久磁石の特性上限界がある。また、ギャップをあまり狭くしすぎると、電子ビームが永久磁石に衝突することによって生じた放射線による永久磁石の減磁という新たな問題が発生する。従って、ギャップを狭くするという方法のみで磁場を強くするには限界があった。\n\n【特許文献1】特開2000-206296号公報\n\n【非特許文献1】In-vacuum  undulators  of  SPring-8,T.Hara,T.Tanaka,T.Tanabe,X.M.Marechal,S.Okada  and  H.Kitamura:J.Synchrotron  Radiation  5,403(1998)\n\n【非特許文献2】Construction  of  an  in-vacuum  undulator  for  production  of  undulator  x-rays  in  the  5-25  keV  region.S.Yamamoto,T.Shioya,M.Hara,H.Kitamura,X.W.Zhang,T.Mochizuki,H.Sugiyama  and  M.Ando;Rev.Sci.Instr\n\num.61(1992)400.\n\n【発明の開示】\n\n【発明が解決しようとする課題】\n\n【0005】\n\n本発明は上記実情に鑑みてなされたものであり、その課題は、第1磁気回路と第2磁気回路とを空間部を隔てて対向配置させる場合に、空間部に形成される磁場を強くできると共に耐放射線特性を改善した挿入光源を提供することである。\n\n【課題を解決するための手段】\n\n【0006】\n\n上記課題を解決するため本発明に係る挿入光源は、\n\n周期磁場を形成するための第1磁気回路と、\n\nこの第1磁気回路を支持するための第1支持体と、\n\n第1磁気回路に対向配置され、周期磁場を形成するための第2磁気回路と、この第2磁気回路を支持するための第2支持体と、\n\n対向配置される第1磁気回路と第2磁気回路の間に形成され、電子ビームが通過するための空間部と、\n\n第1磁気回路と第2磁気回路とを真空封止する真空槽と、\n\n第1磁気回路と第2磁気回路を構成する永久磁石を室温以下に冷却するための冷却機構とを備えていることを特徴とするものである。\n\n【0007】\n\nこの構成による挿入光源の作用·効果を説明する。周期磁場を形成するために、第1磁気回路と第2磁気回路とが空間部を挟んで対向配置される。第1磁気回路は第1支持体に支持され、第2磁気回路は第2支持体に支持される。第1磁気回路と第2磁気回路は、共に真空槽内に真空封止される。この周期磁場が形成される空間部に電子ビームを通過させることで、シンクロトロン放射光を発生させることができる。第1磁気回路と第2磁気回路は、夫々永久磁石により構成されるが、この永久磁石を室温以下に冷却させるための冷却機構を備えている。永久磁石を冷却することで、常温で使用する場合よりも、残留磁束密度(Br)や保磁力(iHcで表わし、I-Hカーブ(減磁カーブ)がH軸を横切る点でのHの大きさのことで固有保磁力という)が上がるという特性がある。残留磁束密度が上がることで、磁気特性が高くなり空間部に強力な磁場を形成することができる。また、保磁力が上昇することにより、耐放射線の特性が高くなることが知られている。その結果、第1磁気回路と第2磁気回路とを空間部を隔てて対向配置させる場合に、空間部に形成される磁場を強くできると共に耐放射線特性を改善した挿入光源を提供することができる。\n\n【0008】\n\n従来は、ベーキング処理中は永久磁石が所定温度以上に加熱されないように120℃程度の熱水を、使用時は電子ビームがもたらす熱によって磁気回路温度が不安定にならないよう室温程度の冷却水を循環させて磁気回路を冷却している。\n\n【0009】\n\n本発明の挿入光源として、更に、前記空間部の間隔を変更するための間隔変更機構と、\n\n前記冷却機構に設けられ、冷媒を通過させるための冷媒通過管と、\n\nこの冷媒通過管と、第1支持体及び第2支持体とを連結する連結部とを備え、\n\nこの連結部が柔軟性を有し、前記間隔変更機構による間隔の変更を許容するように構成されていることが好ましい。\n\n【0010】\n\n間隔変更機構を設けることで、空間部の間隔を変更することができるように構成することで、これにより、磁場の強さも調整することができる。また、磁気回路を組み込むときも組立を行い易くできる。冷却機構として、冷媒を通過させるための冷媒通過管を設け、これを第1支持体と第2支持体に連結部により連結する。従って、連結部を介して各支持体に支持される磁気回路を冷却させることができる。また、連結部は柔軟性を有している\n\nため、冷媒通過管を固定させた状態で、空間部の間隔を変更したとしても(第1·第2支持体を移動させたとしても)、容易に移動させることができる。\n\n【0011】\n\n本発明に係る別の冷却機構は、第1磁気回路を冷却するために設けられ、冷媒を通過させるための第1冷媒通過管と、\n\n第2磁気回路を冷却するために設けられ、冷媒を通過させるための第2冷媒通過管とを備え、\n\n第1冷媒通過管を第1支持体に対して固定支持すると共に、第2冷媒通過管を第2支持体に対して固定支持するように構成されていることが好ましい。\n\n【0012】\n\nこの場合は、第1冷媒通過管は第1支持体に固定支持され、第2冷媒通過管は第2支持体に固定支持される。これにより、各支持体に支持される磁気回路が冷却される。なお、この構成によれば、第1·第2支持体を移動させる場合に、各支持体に固定した冷媒通過管も共に移動する構成であるから、柔軟性を有する連結部を設けなくても良い。\n\n【0013】\n\n本発明に係る更に別の冷却機構は、第1磁気回路を冷却するために設けられ、冷媒を通過させるための第1冷媒通過管と、\n\n第2磁気回路を冷却するために設けられ、冷媒を通過させるための第2冷媒通過管とを備え、\n\n第1冷媒通過管を第1支持体の内部を貫通するように構成すると共に、第2冷媒通過管を第2支持体の内部を貫通するように構成されていることが好ましい。\n\n【0014】\n\n冷媒を支持体の内部を貫通させるようにすることで、効率良く磁気回路を冷却させることができる。\n\n【0015】\n\n本発明として、空間部の間隔を変更するための間隔変更機構と、\n\n前記冷却機構に設けられ、冷凍機により冷却される冷却ヘッドと、\n\nこの冷却ヘッドと、第1支持体及び第2支持体とを連結する連結部とを備え、\n\nこの連結部が柔軟性を有し、前記間隔変更機構による間隔の変更を許容するように構成されていることが好ましい。\n\n【0016】\n\n先ほどは冷媒通過管を設けることで冷却機構を構成する例を説明したが、冷凍機を用いた構成も考えられる。この場合、冷凍機の冷却ヘッドを第1支持体及び第2支持体に対して連結部を介して連結させることができる。この場合、連結部は柔軟性を有しているので、空間部の間隔を変更する場合に、容易に追従させることができる。\n\n【0017】\n\n本発明において、前記第1支持体を支持する第1支持軸と、前記第2支持体を支持する第2支持軸とに夫々中空部を形成していることが好ましい。\n\n【0018】\n\n磁気回路を冷却する冷却機構を設ける場合に、挿入光源の外部からの熱伝導を抑制する必要がある。第1·第2支持体を支持する支持軸は、強度が必要とされるため、金属で形成されるが、金属は熱伝導性がよいため外部からの熱が伝わりやすい。そこで、支持軸を中空に形成することで、熱を伝わりにくくすることができる。よって、磁気回路を所望の冷却温度に設定することができる。\n\n【0019】\n\n本発明において、第1磁気回路の温度を検出する第1温度センサーと、\n\n第1磁気回路を加熱可能な第1ヒーターと、\n\n第2磁気回路の温度を検出する第2温度センサーと、\n\n第2磁気回路を加熱可能な第2ヒーターと、\n\n第1·第2温度センサーによる温度計測データに基づいて、第1ヒーター及び第2ヒー\n\nターを制御する温度制御部とを備えていることが好ましい。\n\n【0020】\n\n永久磁石を冷却させる場合、残留磁束密度は温度の低下と共に大きくなっているが、ある温度以上に低下させると逆に残留磁束密度が小さくなるという特性を示す永久磁石も存在する。従って、かかる永久磁石を用いて磁気回路を構成する場合は、冷却温度を制御する必要がある。そこで、各磁気回路を加熱可能なヒーターと、各磁気回路の温度を検出する温度センサーと、各ヒーターを制御する温度制御部を設けることで、適切な冷却温度となるように制御することができる。\n\n【0021】\n\n本発明において、第1支持体及び第2支持体は、夫々、永久磁石を取り付けるホルダー部と、このホルダー部を支持するホルダー支持部とを有し、\n\nこのホルダー部の材質をホルダー支持部の材質よりも熱膨張率が大きいか等しくなるようにすることが好ましい。\n\n【0022】\n\n永久磁石をホルダー部に対して組み立てる作業は常温で行い、実際に挿入光源を稼動させる場合は、所望の冷却温度に冷却させる。この場合、ホルダー部よりもホルダー支持部の材質の熱膨張率が大きいと、冷却させた場合に熱膨張率の違いに起因して、ホルダー部が変形し磁気回路が破損してしまう。そこで、ホルダー部とホルダー支持部とを同一の材質(熱膨張率が等しい)で形成するか、ホルダー部の熱膨張率がホルダー支持部よりも大きくなるようにすれば、熱膨張率の違いによるホルダー部の変形を生じさせなくてすむ。\n\n【図面の簡単な説明】\n\n【0023】\n\n【図1】第1実施形態に係る挿入光源の縦断面図\n\n【図2】磁気回路の構成を示す図\n\n【図3】磁気回路の別構成を示す図\n\n【図4】温度制御に関する制御ブロックを示す図\n\n【図5】磁石の特性を示すグラフ\n\n【図6】第2実施形態に係る挿入光源の縦断面図\n\n【図7】第3実施形態に係る挿入光源の縦断面図\n\n【図8】第4実施形態に係る挿入光源の縦断面図\n\n【図9】第5実施形態に係る挿入光源の縦断面図\n\n【図10】第6実施形態に係る挿入光源の縦断面図\n\n【図11】第7実施形態に係る挿入光源の縦断面図\n\n【図12】第8実施形態に係る挿入光源の縦断面図\n\n【図13】第9実施形態に係る挿入光源の縦断面図\n\n【図14】永久磁石の具体例を示す図\n\n【発明を実施するための最良の形態】\n\n【0024】\n\n本発明に係る挿入光源の好適な実施形態を図面を用いて説明する。図1は、第1実施形態に係る挿入光源の縦断面図を示す図である。図2は、磁気回路の構成を示す概念図である。図3は、磁気回路の別構成を示す概念図である。\n\n【0025】\n\nまず、磁気回路について説明する。図2は、いわゆるハルバッハ型と呼ばれる磁気回路を示している。第1磁気回路11と第2磁気回路12とが空間部13を隔てて配置されている。第1磁気回路11は、4つの永久磁石11a〜11dを1組として、これが多数組み電子ビームの進行方向に沿って並べられている。各永久磁石11a〜11dの磁化方向は矢印で示されている。第2磁気回路12も、4つの永久磁石12a〜12dを1組として、これが多数組み電子ビームの進行方向に沿って並べてられている。よって、磁場の周期は図のようにλで表わされる。この磁石の配列ピッチについては、目的に応じて適宜変更できるものである。\n\n【0026】\n\n空間部13のギャップ間隔はgで表わされる。この間隔gは、間隔変更機構により変更可能に構成されている。間隔を変更することで、磁場の強さを調整することができる。図2に示すような永久磁石の配置を行うことで、空間部13に周期磁場を形成することができる。この空間部13に電子ビームを通過させると、周期磁場の影響を受けて電子ビームが蛇行しながら進行する。電子ビームの蛇行面Mは、対向している第1·第2磁気回路の磁石の面と平行である。電子ビームを蛇行進行させることで、所望のシンクロトロン放射光を発生させることができる。\n\n【0027】\n\n図2に示す磁気回路は永久磁石のみにより構成されているが、図3に示すいわゆるハイブリッド型とよばれる磁気回路では、永久磁石と永久磁石の間に軟磁性体を配置している。すなわち、第1磁気回路は、永久磁石11A,11Cと軟磁性体11B,11Dが交\n\n互に配置されており、第2磁気回路は、永久磁石12A,12Cと軟磁性体12B,12Dが交互に配置されている。磁化方向(磁束の方向)については、矢印に示している通りである。本発明に係る挿入光源においては、いずれの磁気回路を採用してもよく、特定の構成を有する磁気回路に限定されるものではない。\n\n【0028】\n\n\n\n次に第1実施形態に係る挿入光源の構成を説明する。図1は、電子ビームの進行方向に対して垂直な面で切断した場合の縦断面図である。第1磁気回路11と第2磁気回路12とが空間部13を介して対向配置されている。第1磁気回路11は、図2でも説明したように、多数の永久磁石mが電子ビームの進行方向(図1の紙面に垂直方向)に沿って多数並べて配置されている。第2磁気回路12も同様に永久磁石mが多数並べて配置されている。なお、好ましい永久磁石mの具体例については、後述する。\n\n【0029】\n\n第1磁気回路11を取り付け支持するために第1支持体21が設けられ、この第1支持体21は、第1磁石ホルダ21a(ホルダー部に相当)と第1磁石取付ビーム21b(ホルダー支持部に相当)とを備えている。従来は、ベーキング処理により高温にするため、第1磁石ホルダ21aは無酸素銅により形成し、第1第1磁石取付ビーム21bはアルミニウムにより形成していたが、本発明においては、いずれも無酸素銅で形成する。後述するように、磁気回路11,12を冷却させると、磁石ホルダ21aも磁石取付ビーム21bも寸法が縮むが、同じ材料であるから寸法変化に伴う磁石ホルダ21aの変形が生じない。従って、磁気回路11,12を冷却させたとしても、永久磁石mを変形させて破損させるなどの事故が生じることがない。\n\n【0030】\n\nなお、第1磁石ホルダ21aをアルミニウムで形成し、第1磁石取付ビーム21bを無酸素銅で形成しても良い。この場合も、アルミニウムの方が熱膨張率が無酸素銅よりも大きいので、冷却させたとしても、磁気回路11,12が破損する方向への変形は生じない。\n\n【0031】\n\n第2磁気回路12を取り付け支持するための第2支持体22、第2磁石ホルダ22a、第2磁石取付ビーム22bについても第1磁気回路11と同様である。\n\n【0032】\n\n次に、各磁気回路11,12を冷却するための冷却機構の構成について説明する。冷却機構として、冷媒を通過させるための冷媒通過管30を設けており、空間部13の左右両側に一対の冷媒通過管30が設けられている。冷媒としては、特定のものに限定されないが、例えば、液体窒素、液体ヘリウム等の液化された冷媒が好ましい。冷媒通過管30も電子ビームの進行方向に沿って配置されている。冷媒は所定の循環経路により循環される構造を採用する。\n\n【0033】\n\n冷媒通過管30と第1·第2支持体21,22とは連結部31を介して接続されている。連結部31は、柔軟性を有する形状(図示するようにアコーディオン式に折り畳める構造)に形成され、第1·第2支持体21,22が上下方向に移動したとしても、各支持体21,22と冷媒通過管30との連結状態を維持できるようにしている。連結部31は、熱伝導性の良い導体(例えば、銅(無酸素銅やベリリウム銅)、アルミニウム)により形成される。なお、冷媒通過管30は、固定された状態である。\n\n【0034】\n\n連結部31に柔軟性を持たせるのは上記の理由であるが、更に、若干の熱抵抗を付与するという目的も有する。熱抵抗を持たせることにより、後述する温度制御を精度よく行うことができる。\n\n【0035】\n\n冷却機構により磁気回路11,12を冷却する場合、室温以下でかつ液体窒素あるいは液体ヘリウム以上の温度となるように設定する。なお、設定温度は使用する冷媒の種類や磁気回路11,12を構成する永久磁石mの種類によって異なるものである。\n\n【0036】\n\n次に、永久磁石mを冷却させることにより生じる効果を説明する。永久磁石の一般的な特性として、冷却により残留磁束密度Brが高くなる。これにより、空間部13において強力な磁場を形成することができる。また、永久磁石を冷却することにより保磁力が高くなる。これにより、耐放射線特性が上昇する。また、永久磁石を冷却させることで、真空槽1内の永久磁石の表面からの気体分子の脱離が減少する。従って、磁気回路11,12に対してベーキング処理を行わないでも真空槽1内を超高真空にすることができる。ベーキング処理を行うときは所定の温度に加熱しなければならないが、永久磁石を加熱すると熱減磁という問題が発生する。従って、従来のように、ベーキング処理における熱減磁を考慮して、室温で高保磁力かつ低残留磁束密度の材料を選択する必要があった。しかし、本発明の場合、そのような熱減磁を考慮しなくて良いので、常温で低保磁力かつ高残留磁束密度を有する材料を選択することができ、これにより、空間部13に強力な磁場を形成することができる。\n\n【0037】\n\n第1·第2磁気回路11,12は、真空槽1の中に真空封止されている。真空槽1の中に磁気回路11,12も封止することで、ギャップ間隔gを小さくすることができる。また、真空封止することで断熱効果を有するので、挿入光源Rが設置される室内の熱が真空槽1を介して磁気回路11,12に伝達しにくくすることができる。\n\n【0038】\n\n第1·第2磁気回路11,12を支持した第1·第2支持体21,22は、不図示の間隔変更機構により上下方向(図1の矢印A,B)に移動させることができる。間隔変更機構としては、例えば、前述した特許文献1あるいは非特許文献1に開示される機構を用いることができる。間隔変更機構により、空間部13のギャップ間隔gを変更することができる。ギャップ間隔gを変更することで、空間部13における磁場の強さが所望になるように調節することができる。\n\n【0039】\n\n第1支持体21の上部は、第1支持軸14により支持されている。第1支持軸14は、金属製であるが、その内部を中空に形成している。第1支持軸14は、そのほとんどが真空槽1の外部にあるため、室内(真空槽外部)の熱が第1支持軸14を伝わって第1磁気回路11の温度を上げる方向に作用する。これを極力抑制するために、第1支持軸14を中空として熱が伝わりにくくしている。第2支持体22の下部も第2支持軸15により支持されているが、同様の理由で内部を中空に形成している。これにより、支持軸14,15としての強度を確保しつつ、熱伝導性を低下させている。各支持軸14,15の周囲にはベローズ16が設けられており、真空槽1内部の真空性を維持しながらも、各支持軸14,15の上下移動を許容している。\n\n【0040】\n\n挿入光源は、常温室内に配置されるため、赤外線等による輻射熱を極力避ける必要がある。各磁気回路11,12は、真空槽1により真空断熱をされているが、輻射熱により磁気回路11,12を十分に冷却できないということもありうる。そこで、熱を反射させるための仕組みが必要である。例えば、支持体21,22の磁石ホルダ21a,22aと磁石取付ビーム21b,22bの表面に金メッキ等を施して輻射熱を反射するようにすることが好ましい。\n\n【0041】\n\n第1支持体21には、第1磁石取付ビーム21bの裏面側に第1ヒーター21cが設けられている。第2支持体22にも同様に第2ヒーター22cが設けられている。また、第1·第2磁石取付ビーム21b,22bの内部に温度センサー21d,22dを埋め込み配置する(図1では不図示)。図4は、温度制御部23の構成を示す制御ブロック図である。温度設定部24には、永久磁石を冷却制御する温度データが設定されている。温度制御部23は、各温度センサー21d,22dからの計測された温度データと、設定されている温度データとを比較して所望の温度になるように、各ヒーター21c,22cを個別に制御する。\n\n【0042】\n\nヒーターとしては、例えば、シースヒーターを用いることができる。各ヒーター21c,22cの取り付けは、各磁石取付ビーム21b,22bの裏面側に銅板等で押さえつけて、ネジ止めすることで行うことができる。温度センサーとしては、白金を使用した測温抵抗体や熱電対を用いることができる。\n\n【0043】\n\n温度制御部23は、必ずしも必要ではないが、次のような場合には設けておくことが好ましい。永久磁石の特性として、低温にすればするほど磁気特性が上昇する場合は問題がないが、図5に示すように、ある特定の低温において残留磁束密度がピークを示すような永久磁石材料も存在する。例えば、TSR(スピン再配列温度)以下の温度でスピン再配列を起こすような希土類-鉄-ボロン系磁石である場合、TSR以下の温度に冷却されないように磁気回路11,12に対して温度制御を行う必要がある。\n\n【0044】\n\n\n\n次に、第2実施形態に係る挿入光源を図6により説明する。第1実施形態と同じ機能をする部分については、同じ図番を付することにして説明を省略する。\n\n【0045】\n\n第2実施形態では、第1冷媒通過管30Aと第2冷媒通過管30Bとを備えており、第1冷媒通過管30Aは左右一対設けられ、夫々連結部31Aを介して第1支持体21に対して連結される。また、第2冷媒通過管30Bも同様に連結部31Bを介して第2支持体22に対して連結される。各連結部31A,31Bは柔軟性を有している。これにより、各冷媒通過管30A,30Bは真空槽1に対して固定されて取り付けられているが、第1·第2支持体21,22が上下方向に移動したとしても、各支持体21,22と冷媒通過管30A,30Bとの連結状態を維持できるようにしている。\n\n【0046】\n\n\n\n次に、第3実施形態に係る挿入光源を図7により説明する。第2実施形態と異なるのは、第1·第2冷媒通過管30A,30Bが固定手段32A,32Bを介して夫々第1支持体21、第2支持体22に対して固定支持されることである。固定手段32A,32Bは、金属(例えば、銅板(ベリリウム銅等)、ステンレス板、アルミニウム板)で形成される。第1支持体21や第2支持体22を上下移動させるときは、第1冷媒通過管30Aと第2冷媒通過管30Bもいっしょに上下移動する構成である。従って、柔軟性を有する連結部は用いられていない。なお、固定手段32A,32Bに熱抵抗を持たせる必要がある場合には、ステンレス板で形成することが好ましい。\n\n【0047】\n\n\n\n次に、第4実施形態に係る挿入光源を図8により説明する。第3実施形態と異なるのは、第1·第2冷媒通過管30A,30Bが、直接的に第1支持体21と第2支持体22の側面部に固着されている点である。第3実施形態に示すような固定手段は設けられていない。また、第3実施形態と同様に、第1支持体21や第2支持体22を上下移動させるときは、第1冷媒通過管30Aと第2冷媒通過管30Bもいっしょに上下移動する構成である。従って、柔軟性を有する連結部は用いられていない。各冷媒通過管30A,30Bを直接的に各支持体21,22に対して取り付けているので、効果的に冷却を行うことができる。また、第4実施形態はヒーターを設けていないが、冷媒の温度を可変とすることで温度制御を行うことができる。次の第5実施形態も同様である。\n\n【0048】\n\n\n\n次に、第5実施形態に係る挿入光源を図9により説明する。この実施形態では、第1冷媒通過管30Aは、第1支持体21の第1磁石取付ビーム21bの内部に埋め込まれた形で設けられる。第2冷媒通過管30Bも同様に第32磁石取付ビーム22bの内部に埋め込まれている。第1支持体21や第2支持体22を上下移動させるときは、第1冷媒通過管30Aと第2冷媒通過管30Bもいっしょに上下移動する構成である。支持体21,22の内部に冷媒通過管30A,30Bを埋め込み配置しているので、効果的に冷却を行うことができる。\n\n【0049】\n\n\n\n次に、第6実施形態に係る挿入光源を図10により説明する。図10以下の実施形態では、冷凍機33を用いた冷却機構を説明する。図10に示すように、真空槽1の左右両側に一対の冷凍機33を配置し、その冷却ヘッド330を真空槽1の内部に臨ませる。冷却ヘッド330の上端側を第1連結部31Aにより第1支持体21に対して連結する。冷却ヘッド330の下端側を第2連結部31Bにより第2支持体22に対して連結する。冷凍機33は、断熱膨張の原理に基づき各磁気回路11,12を冷却させることができる。連結部31A,31Bは、第1実施形態と同様に柔軟性を有している。これにより、第1·第2支持体21,22が上下方向に移動したとしても、各支持体21,22と冷却ヘッド330との連結状態を維持できるようにしている。\n\n【0050】\n\n\n\n次に、第7実施形態に係る挿入光源を図11により説明する。この実施形態では、一対の第1冷凍機33Aと、一対の第2冷凍機33Bとが設けられている。第1冷凍機33Aの第1冷却ヘッド330Aは、第1連結部31Aを介して第1支持体21と連結され、第2冷凍機33Bの第2冷却ヘッド330Bは、第2連結部31Bを介して第2支持体22と連結される。各連結部33A,33Bは柔軟性を有しており、第1·第2支持体21,22が上下方向に移動したとしても、各支持体21,22と冷却ヘッド330との連結状態を維持できるようにしている。\n\n【0051】\n\n\n\n次に、第8実施形態に係る挿入光源を図12により説明する。図12に示すように第1冷凍機33Aを真空槽1の上方に置き、略L字形に形成された冷却ヘッド330Aの先端を真空槽1の内部に臨ませる。第1支持体21の第1磁石取付ビーム21bの裏面側において、連結部34Aを介して冷却ヘッド330Aと連結させる。第1ヒーター21cは、他の実施形態とは異なり、第1磁石取付ビーム21bの中央凹部に設けている。第2冷凍機33Bは真空槽1の下方に置き、その他の冷却ヘッド330B、連結部34B、第2ヒーター22c等の配置構成は同じである。各連結部34A,34Bは柔軟性を有しており、第1·第2支持体21,22が上下方向に移動したとしても、各支持体21,22と冷却ヘッド330A,330Bとの連結状態を維持できるようにしている。\n\n【0052】\n\n\n\n次に、第9実施形態に係る挿入光源を図13により説明する。冷凍機33A,33Bの配置は、第8実施形態と同じであるが、冷却ヘッド330A,330Bの先端を直接第1·第2磁石取付ビーム21b,22bに対して固定している。従って、第1·第2支持体21,22が上下方向に移動すると、これといっしょに第1冷凍機33Aと第2冷凍機33Bも上下移動することになる。なお、冷却ヘッド330A,330Bの周囲にはベローズ35が設けられており、真空槽1内部の真空性を維持しながらも、冷却ヘッド330A,330Bの上下移動を許容している。\n\n【0053】\n\n第9実施形態では、冷却ヘッド330A,330Bにヒーターを内蔵させることで温度制御を行うことも可能である。\n\n【0054】\n\n\n\n本発明に係る挿入光源の磁気回路11,12を構成するのに好適な永久磁石の具体例を図14に示す。図14において、番号1〜5まではNd-Fe-B系の永久磁石であり、スピン再配列を示すため、極低温でBr(残留磁束密度)が減少する。番号6はPr-Fe-B系の永久磁石であり、スピン再配列を示さない。なお、磁場の測定にはホール素子を用いた。RTは室温、LNTは液体窒素温度(77K)、LHeTは液体ヘリウム温度(4.2K)を示している。\n\n【0055】\n\n図3でハイブリッド型を説明したが、このタイプで使用する軟磁性材料については、パーメンジュール、Ho(ホルミウム)、Dy(ジスプロシウム)、純鉄等を用いることができる。各実施形態における磁気回路は、ハルバッハ型でもハイブリッド型でも良い。\n\n【0056】\n\n\n\n以上のように本発明に係る挿入光源によれば、次のような作用·効果を有する。冷却機構により冷却することで、残留磁束密度(Br)が上昇し、常温で使用するよりも強力な磁場を空間部に形成することができる。また、冷却することで固有保磁力(iHc)が上昇し、これに伴い耐放射線性が上昇する。冷却機構により磁気回路、ホルダー部、ホルダー支持部を冷却する構造であるので、超高真空に引く時にベーキングを行う必要がない。よって、ベーキングに伴う熱減磁を考慮する必要がなく、高エネルギー積の永久磁石を使用することができる。\n\n【0057】\n\n従来は、真空槽内において、永久磁石表面からの脱ガスを行って到達真空度を上げるために、ベーキング処理で100℃前後に加熱しても永久磁石が熱減磁しないためには、iHcの高い材質を選択する必要があった。高iHc材料は、相補関係から必然的にBrが低いので、磁気回路により形成される磁束密度が低くなる。\n\n【0058】\n\nこれに対して、本発明は、永久磁石の冷却によりガス分子が磁石表面にトラップされるので、ベーキング処理による脱ガスを行わなくても、目標の到達真空度を得ることができる。すなわち、磁石を加熱しないので、減磁防止のために高iHc材料を選択しなくて\n\nも良い。従って、高Br材料を選択することができ、なおかつ、低温でBrが上昇するので、更に高い磁束密度が得られる。\n\n【0059】\n\n\n\n各実施形態において夫々開示された構造は、合理的な範囲内で、任意に組み合わせることができる。', '【技术领域】\n\n【0001】\n\n本发明是一种用于形成周期性磁场的第一磁路,以及用于支撑第一磁路的第一支撑件,以及第一磁路,并且第一磁路设置为形成周期性磁场。2磁路和第二个磁路用于支撑第二磁路的支持和要设置的第一磁路和第二磁路之间的空间,以及用于通过的电子束的空间部分涉及一种具有真空腔室的真空室的插入光源具有第一磁路和第二磁路。\n\n发明背景\n\n【0002】\n\n当在真空中的磁场中加速到近光速的电子束在磁场中弯曲时,发射的光在电子束的移动轨迹的切向方向上发射,并且这称为同步辐射。由该同步辐射产生的光源安装在电子存储环(电子束存储环)的直线部分上,以及利用高方向,高强度,高极化等特性的各种技术的实际应用进行了。今天的电子存储环设置有大量更高的梁电流,较小的光束横截面区域和插入光源(波浪琴),其由于较高的光束方向性导致的高亮度光源。\n\n【0003】\n\n插入光源例如是第一磁路和第二磁路,以形成电子束通过的周期性磁场,如以下专利文献1和非专利文献1和2所示。通过相反的配置采用配置。为了形成周期性磁场,通过布置大量的永磁体来配置第一和第二磁路。当强磁场旨在配置时,如果第一磁路和第二磁路尽可能靠近,则可以变窄间距距离(所谓的间隙),因此磁场的强度也增加。因此,采用一种用真空室密封第一磁路和第二磁路的配置。与在第一磁路和第二磁路之间提供真空罐的配置相比,它具有可以变窄间隙的优点。\n\n【0004】\n\n然而,即使在上述结构中缩小间隙,也存在永磁体的特征上限。另外,如果间隙太窄,则通过由与永磁体碰撞的电子束引起的辐射通过辐射对永磁体的退出问题的新问题。因此,仅利用缩小间隙的方法来强化磁场的极限。\n\n专利文献1:JP-A-2000-206296\n\n[非专利文献1]春天8,T.Tanaka,T.Tanaka,T.Tanaka,T.Tanabe,X. M.Malarchal,S.Kitamura和H.Kitamura:J.Synchrotron辐射5,403(1998)\n\n[2]在5-25 keV地区生产出气出X射线的真空波浪的构建.Yamamoto,T.Shioya,M. Hara,H.Kitamura,Xwzhang,T. Mochizuki H. Sugiyama和M.Ando; Rev. Sci.instr\n\nUM.61(1992)400。\n\n发明的描述\n\n本发明要解决的问题\n\n【0005】\n\n鉴于上述情况,已经提出了本发明,并且该问题可以加强在第一磁路和第二磁路彼此相对设置的情况下在空间中形成的磁场。提供一个插入光源具有改善的辐射电阻特性。\n\n[解决问题的手段]\n\n【0006】\n\n为了解决上述问题,根据本发明的插入光源是\n\n用于形成周期性磁场的第一磁路,\n\n用于支持该第一磁路的第一个支持,\n\n第二磁路与第一磁路相对设置并形成周期性磁场,以及用于支撑该第二磁路的第二支撑件,\n\n第一磁路之间的空间和第二磁路,以及电子束通过的空间部分,\n\n真空罐用于真空密封的第一磁路和第二磁路,\n\n其特征在于,构成第一磁路和第二磁路的永磁体设置有冷却机构,用于冷却至室温或更小。\n\n【0007】\n\n将描述根据该配置的插入光源的操作和效果。为了形成周期性磁场,第一磁路和第二磁路通过空间部分彼此相对地设置。第一磁路由第一支撑件支撑,第二磁路由第二支撑件支撑。第一磁路和第二磁路均在真空罐中密封。通过将电子束通过电子束到形成周期性磁场的空间部分,可以产生同步辐射。第一磁路和第二磁路由永磁体构成,而是包括冷却机构,用于将该永磁体冷却至室温或更小。通过冷却永磁体,残余磁通密度(BR)和矫顽力(IHC表示的IHC)比在常温下使用时,H轴在H轴交叉H轴的点处的尺寸。那里是特征传递力增加的特征。通过增加剩余磁通密度,磁特性高,并且可以在空间中形成强大的磁场。另外,已知通过增加矫顽力来增加辐射抗性的特性。结果,当第一磁电路和第二磁路彼此相对设置时,可以强烈地实现形成在空间中的磁场,并且可以提供具有改善的辐射电阻改善的插入光源。。\n\n【0008】\n\n通常,在烘焙过程中,没有将永磁体的热水未加热到预定温度或更高,并且当电子束带有电子束时,磁路温度不会变得不稳定,当电子束带来电子束时,磁路温度不是不稳定的。循环和冷却磁路。\n\n【0009】\n\n作为本发明的插入光源,用于改变空间部分间距的间隔变化机构\n\n制冷剂通道管设置用于冷却机构并通过制冷剂。\n\n提供了该制冷剂通道管和连接第一支撑件和第二支撑件的连接部分。\n\n优选地,连接部分具有柔性并且允许由于间隔改变机构而改变间隔。\n\n【0010】\n\n通过提供间隔改变机构,磁场的强度也可以通过这样调节,从而可以改变间隔间隔。另外,当结合磁路时,可以容易地执行组件。作为冷却机构,提供用于通过制冷剂的制冷剂通道管,其通过连接部分连接到第一支撑件和第二支撑件。因此,可以通过连接部分冷却由每个支撑件支撑的磁路。此外,连接部分具有灵活性\n\n因此,即使空间部分的间隔被改变(即使第一和第二支撑件移动)被改变(即使移动第一和第二支撑件),也在制冷剂通道管固定的状态下执行。\n\n【0011】\n\n提供根据本发明的另一种冷却机构以冷却第一磁路,以及用于使制冷剂的第一制冷剂输送管,\n\n它提供了冷却第二磁路,并配备有第二制冷剂通道管,用于通过制冷剂,\n\n优选的是,第一制冷剂异端管相对于第一支撑件固定地支撑,并且构造成相对于第二支撑件固定第二制冷剂通过管。\n\n【0012】\n\n在这种情况下,第一制冷剂通道管通过第一支撑件固定地支撑,并且第二制冷剂通道管在第二支撑件上固定地支撑。由此,通过每个支撑件支撑的磁路被冷却。根据该配置,当移动第一和第二支撑件时,由于固定到每个支撑件的制冷剂通道管也在一起移动,即使没有提供具有柔性的连接部分良好。\n\n【0013】\n\n根据本发明的另一种冷却机构提供用于冷却第一磁路,以及用于使制冷剂的第一制冷剂通道管,\n\n它提供了冷却第二磁路,并配备有第二制冷剂通道管,用于通过制冷剂,\n\n优选的是,第一制冷剂通过管被配置为穿透第一支撑件的内部,并且被配置为通过第二支撑件穿透第二制冷剂的内部。\n\n【0014】\n\n通过使制冷剂能够穿透支撑件的内部,可以有效地冷却磁路。\n\n【0015】\n\n用于改变间隔间隔作为本发明的间隔改变机制,\n\n在冷却机构中提供的冷却头并由冰箱冷却,\n\n该冷却头配备有连接第一支撑件和第二支撑件的连接部分。\n\n优选地,连接部分具有柔性并且允许由于间隔改变机构而改变间隔。\n\n【0016】\n\n当然,已经描述了通过提供制冷剂通道管来配置冷却机构的示例,但是也可以想到使用冰箱的配置。在这种情况下,冰箱的冷却头可以通过连接部分连接到第一支撑件和第二支撑件。在这种情况下,由于连接部分具有灵活性,因此在改变间隔间隔时可以容易地遵循。\n\n【0017】\n\n在本发明中,优选的是,中空部分形成有支撑第一支撑件的第一支撑轴和支撑第二支撑件的第二支撑轴。\n\n【0018】\n\n当提供用于冷却磁路的冷却机构时,必须抑制从插入光源的外部的热传导。支撑第一和第二支撑件的支撑轴由金属形成,因为需要强度,但是由于金属是导热性的,因此可能会传递金属。因此,可以通过形成支撑轴来使热量传递到中空。因此,磁路可以设定为期望的冷却温度。\n\n【0019】\n\n在本发明中,用于检测第一磁路的温度的第一温度传感器,\n\n第一加热器可以加热第一磁路,\n\n第二温度传感器,可检测第二磁路的温度,\n\n第二加热器,可以加热第二磁路,\n\n第一个加热器和第二升温基于第一和第二温度传感器的温度测量数据\n\n优选地,它设置有控制的温度控制单元。\n\n【0020】\n\n当永磁体冷却时,剩余磁通密度随温度的降低而较大,但是当它降低到一定的温度以上时,也存在一个永磁体,该永磁体表示残留磁通密度降低的特性。因此,当使用这种永磁体构造磁路时,需要控制冷却温度。因此,通过提供能够加热每个磁路的加热器,可以控制用于检测每个磁路的温度的温度传感器,以及用于控制每个加热器的温度控制单元是适当的冷却温度。。\n\n【0021】\n\n在本发明中,第一支撑件和第二支撑件各自具有连接永磁体的保持器部分,以及用于支撑保持器部分的支架支撑件,\n\n保持器部分的材料优选等于或等于大于支架支撑件的材料的热膨胀系数。\n\n【0022】\n\n在常温下进行组装永磁体相对于保持器部分的工作,并且当实际操作插入光源时,冷却到所需的冷却温度。在这种情况下,当保持器支撑部分的材料的热膨胀系数大于保持器部分的热膨胀系数时,保持器部分变形,并且由于在冷却时由于热膨胀系数的差异而被破坏磁路。因此,如果保持器部分和保持器支撑部分由相同的材料(热膨胀系数)或保持器部分的热膨胀系数大于保持器支撑部分,则热膨胀的差异不同。您可以不必引起持有人的变形。\n\n[简要描述;简介]\n\n【0023】\n\n【图1】根据第一实施例的插入光源的纵向剖视图\n\n【图2】显示磁路的组成图\n\n图3.图显示了磁路的另一个配置\n\n图4.图表显示温度控制的控制块\n\n图5.显示磁铁特性的图表\n\n6.根据第二实施例的插入光源的纵向剖视图\n\n图7.根据第三实施例的插入光源的纵向剖视图\n\n图8根据第四实施例的插入光源的纵向剖视图\n\n图9根据第五实施例的插入光源的纵向剖视图\n\n图10.根据第六实施例的插入光源的纵向剖视图\n\n11.根据第七实施例的插入光源的纵向剖视图\n\n12.根据第八实施例的插入光源的纵向剖视图\n\n图13.根据第九实施方式的插入光源的纵向剖视图\n\n14.图显示了永磁体的具体例子\n\n实施本发明的最佳方式\n\n【0024】\n\n将参考附图描述根据本发明的插入光源的优选实施例。图。图1是示出根据第一实施例的插入光源的纵向剖视图的图。图。图2是示出磁路的配置的概念图。图。图3是示出磁路的另一种配置的概念图。\n\n【0025】\n\n首先,将描述磁路。图。图2示出了称为所谓的Halbach类型的磁路。第一磁电路11和第二磁路12设置在空间部分13处。第一磁路11具有四个永磁体11a至11d,并且这沿着大量电子束的行进方向布置。每个永磁体11a至11d的磁化方向由箭头表示。第二磁路12还具有四个永磁体12a至12d,并且这沿多组装电子束的行进方向布置。因此,磁场的周期由如图所示的λ表示。可以根据目的适当地改变该磁铁的布置间距。\n\n【0026】\n\n空间13的间隙间隔由G.该间隔G被配置为通过间隔改变机制来变量。通过改变间隔,可以调整磁场的强度。通过布置如图2所示的永磁体。如图2所示,可以在空间13中形成周期性磁场。当电子束通过空间部分13时,电子束在电子束与周期性磁场的影响蜿蜒时进行。电子束的蛋糕表面M平行于第一和第二磁性电路的磁体的表面。通过使电子束进行曲折,可以产生所需的同步辐射辐射。\n\n【0027】\n\n尽管图2中所示的磁路。图2所示的磁路仅由永磁体组成,磁路被称为图3所示的所谓的混合型。如图3所示,在永磁体和永磁体之间设置在图3中。也就是说,第一磁路具有永磁体11a,11c,软磁体11b,11d\n\n第二磁路交替地布置在第二磁路中,软磁装置12B和12D交替布置。磁化方向(磁通量的方向)如箭头所示。在根据本发明的插入光源中,可以采用任何磁路,并且不限于具有特定配置的磁路。\n\n【0028】\n\n第一实施例\n\n接下来,将描述根据第一实施例的插入光源的配置。图。图1是在垂直于电子束的行进方向的平面中切割时的纵向剖视图。第一磁路11和第二磁路12经由空间部分13彼此相对设置。如上图所示。类似地,第二磁路12通过布置大量的永磁体M.稍后将描述优选的永磁体M的具体实例。\n\n【0029】\n\n提供第一支撑件21以连接和支撑第一磁路11,并且第一支撑件21是第一磁体支架21a(对应于保持器部分),并且第一磁体安装梁21b(保持器支撑件被认为是等同的。传统上,由于第一磁体支架21a由横切铝铜形成,因此第一磁体保持器21a由含氧铜形成,但是在本发明中,尽管第一磁体保持器21a由铝形成。它由铜形成。如稍后所述,当冷却磁路11和12时,磁体支架21a和磁体安装梁21b也具有相同的尺寸,但由于它们是相同的材料,因此由于尺寸变化而导致的磁体支架21a的变形发生。因此,即使磁路11和12冷却,也不会发生诸如变形和损坏永磁体M的事故。\n\n【0030】\n\n第一磁体支架21a可以由铝形成,并且第一磁体连接梁21b可以由缺氧铜形成。同样在这种情况下,由于铝比含氧铜大于含氧铜,即使热膨胀系数大于含氧铜的铜,也不会发生磁路11和12的方向的变形。\n\n【0031】\n\n用于附接第二磁路12的第二支撑件22,第二磁体支架22a和第二磁体连接梁22b也类似于第一磁电路11。\n\n【0032】\n\n接下来,将描述用于冷却每个磁路11和12的冷却机构的配置。作为冷却机构,提供用于通过制冷剂的制冷剂通道管30,并且一对制冷剂通过管30设置在空间部分13的左侧和右侧。制冷剂不限于特异性,但是,例如,优选液态氮和液化制冷剂,例如液氦。制冷剂通道管30也沿着电子束的行进方向设置。制冷剂采用由预定循环路径循环的结构。\n\n【0033】\n\n制冷剂通道管30和第一/第二支撑件21和22经由连接部分31连接。连接部分31形成为具有柔性的形状(如图所示折叠到手风琴方程的结构),并且即使第一和第二支撑件21和22在垂直方向上移动,每个支撑件21,22和连接可以保持具有制冷剂通道30的状态。连接部分31由导电导体(例如,铜(例如铜(非氧气,铍铜),铝)形成。制冷剂通道管30处于固定状态。\n\n【0034】\n\n尽管连接部分31是柔性的,但是它也是施加轻微的热阻的目的。通过提供热阻,可以高精度地执行后面描述的温度控制。\n\n【0035】\n\n当磁路11和12通过冷却机构冷却时,将其设定为室温或更小,液态氮或液体氦气或更高的温度。设定温度取决于所用制冷剂的类型和构成磁路11和12的永磁体M的类型。\n\n【0036】\n\n接下来,将描述冷却永磁体M产生的效果。作为永磁体的一般特征,通过冷却使残余磁通密度Br变高。由此,可以在空间13中形成强磁场。此外,通过冷却永磁体,矫顽力增加。这增加了辐射抗性。此外,通过冷却永磁体,减少了从真空罐1中的永磁体的表面的气体分子的解吸。因此,即使在磁路11和12上执行烘焙处理,真空罐1也可以是超高真空。当进行烘焙处理时,需要加热到预定温度,但是当永磁体被加热时,发生了消热磁化的问题。因此,如在现有技术中,考虑到烘焙过程中的散热磁体,需要在室温下选择具有高矫顽力和低残余磁通密度的材料。然而,在本发明的情况下,由于可以不考虑这种热退磁,因此可以在常温下选择具有低矫顽力和高剩余磁通密度的材料,从而,空间13是强大的磁场可以形成。\n\n【0037】\n\n第一和第二磁电路11和12在真空罐1中是真空密封的。磁路11和12也可以密封在真空罐1中以减小间隙间隔G.另外,由于通过真空密封提供隔热效果,因此可以防止安装插入光源R的腔室的热量通过真空罐1传递到磁电路11和12。\n\n【0038】\n\n支撑第一和第二磁路11和12的第一和第二支撑件21和22可以通过间隔改变机构(未示出)移动到垂直方向(图1中的箭头A和B)。作为间隔改变机制,例如,可以使用上述专利文献1或上述非专利文献1中公开的机制。可以通过间隔改变机制改变空间13的间隙间隔g。通过改变间隙间隔G,可以调整空间13中的磁场的强度。\n\n【0039】\n\n第一支撑件21的上部由第一支撑轴14支撑。第一支撑轴14由金属制成,但是形成中空。由于大多数第一支撑轴14是真空室1的外部,因此室内(真空室外)的热量在透射第一支撑轴14的方向上作用并提高第一磁路11的温度。为了尽可能地抑制这一点,热量不太可能将第一支撑轴14作为中空传递。第二支撑轴15的下部也由第二支撑轴15支撑,但是由于相同的原因,形成空心内部。结果,导热率降低,同时将强度固定为支撑轴14和15。在每个支撑轴14和15周围设置波纹管16,并且允许每个支撑轴14和15的垂直移动,同时保持真空罐1内的真空性质。\n\n【0040】\n\n由于插入光源设置在室温室中,因此必须避免由于红外线等引起的辐射热。每个磁路11和12可以通过真空罐1真空绝缘,但是磁路11和12不能通过辐射热充分冷却。因此,需要一种反射热量的机制。例如,优选地将镀金等施加到支撑件21和22的磁体支架21a和22a的表面上,以及磁体安装梁21b和22b以反映辐射热。\n\n【0041】\n\n第一支撑件21设置有第一磁体附接梁21b的后侧侧的第一加热器21c。类似地,第二加热器22c也设置在第二支撑件22上。此外,温度传感器21d和22d嵌入第一和第二磁体附接梁21b和22b内(图1中未示出)。图。图4是示出温度控制单元23的配置的控制框图。温度设定单元24被设定为用于冷却永磁体的温度数据。温度控制单元23单独地控制每个加热器21c,22c,使得与每个温度传感器21d和22d的测量温度数据与设定的温度数据进行比较以达到所需温度。。\n\n【0042】\n\n例如,作为加热器,可以使用鞘加热器。可以通过在每个磁体安装梁21b和22b的后表面侧上按压和拧紧铜板等上的每个加热器21c和22c的附接。作为温度传感器,可以使用测量电阻或使用铂的热电偶。\n\n【0043】\n\n温度控制单元23不一定需要,但优选在以下情况下提供。作为永磁体的特性,磁特性越高,如果磁特性增加,则存在问题越多,但如图5所示,还存在永磁体材料,其中残留磁通密度表示峰值表示峰值在一定的低温下。例如,在稀土 - 铁 - 硼基磁体的情况下,导致TSR(自旋重新排列温度)低于TSR(自旋重排温度)的温度,温度控制到磁电路11和12以便不冷却到TSR低于TSR的温度。需要做。\n\n【0044】\n\n第二实施例\n\n接下来,将参考图4描述根据第二实施例的插入光源。具有与第一实施例中相同的功能的部分用相同的附图标记表示,并且将省略描述。\n\n【0045】\n\n在第二实施例中,提供第一制冷剂通道管30a和第二制冷剂通道管30b,并且第一制冷剂通道管30a与一对左右的一对左右,并且第一支撑件21经由连接部分31a配对连接到。此外,第二制冷剂通道管30b经由连接部分31b类似地连接到第二支撑件22。每个连接部分31a,31b具有柔性。结果,每个制冷剂通道管30a和30b被固定并附接到真空室1,但是即使第一和第二支撑件21和22在垂直方向上移动,每个支撑件21也可以保持连接状态在22和制冷剂通道30a和30b之间。\n\n【0046】\n\n\n\n接下来,将参考图3描述根据第三实施例的插入光源。通过将第一支撑件21和第二支撑件22固定,第一和第二制冷剂通道30a和30b分别与第一和第二制冷剂通道30a和30b分别不同。是。定影装置32a和32b由金属形成(例如,铜板(铍铜等),不锈钢板,铝板)。当第一支撑件21和第二支撑件22上下移动时,第一制冷剂通道管30A和第二制冷剂通道管30B也被配置为一起向上移动。因此,不使用柔韧性连接部分。当需要具有与定影装置32a和32b的热阻时,优选形成不锈钢板。\n\n【0047】\n\n\n\n接下来,将参考图4描述根据第四实施例的插入光源。首先,第一和第二制冷剂通道30a和30b直接地直接固定到第一支撑件21和第二支撑件22的侧面部分,直接在第三实施例中固定到第一支撑件21和第二支撑件22。没有如第三实施例所示的固定装置。此外,如在第三实施例中,当向上和向上移动第一支撑件21和第二支撑件22时,第一制冷剂通道管30A和第二制冷剂通道管30B也被配置为一起向上移动。因此,不使用柔韧性连接部分。由于每个制冷剂通道管30a,30b直接连接到每个支撑件21和22,因此可以有效地执行冷却。此外,尽管第四实施例没有提供加热器,但是通过制造制冷剂变量的温度可以进行温度控制。以下第五实施例也是一样的。\n\n【0048】\n\n\n\n接下来,将参考图4描述根据第五实施例的插入光源。在该实施例中,第一制冷剂通道管30A以嵌入方式设置在第一支撑件21的第一磁体附接梁21B内。第二制冷剂通道管30b类似地嵌入第二十二磁体安装梁22b内。当第一支撑件21和第二支撑件22上下移动时,第一制冷剂通道管30A和第二制冷剂通道管30B也被配置为一起向上移动。由于制冷剂通道管30a和30b嵌入支撑件21和22内,因此可以有效地执行冷却。\n\n【0049】\n\n\n\n接下来,将参考图4描述根据第六实施例的插入光源。在以下实施例中,将描述使用冰箱33的冷却机构。如图1所示。如图10所示,一对冰箱33设置在真空罐1的左侧和右侧,并且冷却头330设置在真空罐1内。冷却头330的上端侧通过第一连接部分31a连接到第一支撑件21。冷却头330的下端侧通过第二连接部分31b连接到第二支撑件22。冰箱33可以基于绝热膨胀的原理冷却每个磁路11和12。连接部分31a和31b具有如第一实施例中的灵活性。结果,即使第一和第二支撑件21和22在垂直方向上移动,也可以保持支撑件21和22和冷却头330之间的连接状态。\n\n【0050】\n\n\n\n接下来,将参考图4描述根据第七实施例的插入光源。在该实施例中,提供了一对第一冰箱33a和一对第二冰箱33b。第一冰箱33a的第一冷却头330a经由第一连接部分31a连接到第一支撑件21,第二冰箱33b的第二冷却头330b经由第二连接部分31b。连接到第二支撑件22。每个连接部分33a和33b具有柔韧性,并且即使第一和第二支撑件21和22在垂直方向上移动,也保持每个支撑件21,22和冷却头330的固结状态。我可以做到。\n\n【0051】\n\n第八实施例\n\n接下来,将参考图4描述根据第八实施例的插入光源。如图1所示。如图12所示,第一冰箱33a放置在真空室1上方,并且形成为基本上L形形状的冷却头330a的尖端设置在真空罐1内。在第一支撑件21的第一磁体附接梁21b的后侧,通过连接部分34a连接到冷却头330a。与其他实施例不同,第一加热器21c设置在第一磁体附接梁21b的中心凹槽中。第二冰箱33b放置在真空罐1的下方,并且诸如其他冷却头330b,连接部分34b和第二加热器22c的布置构造是相同的。每个连接部分34a和34b具有柔韧性,并且即使第一和第二支撑件21和22在垂直方向上移动,每个支撑件21,22和冷却头330a和330b的固结状态。可以维持。\n\n【0052】\n\n\n\n接下来,将参考图4描述根据第九实施例的插入光源。冰箱33a和33b的布置与第八实施例的布置相同,但是冷却头330a和330b的尖端直接固定到第一和第二磁体安装梁21b和22b。因此,当第一和第二支撑件21和22在垂直方向上移动时,第一冰箱33a和第二冰箱33b也被向上和向下移动在一起。围绕冷却头330a和330b提供波纹管35,并且可以允许冷却头330a和330b移动和下降,同时保持真空罐1内的真空性质。\n\n【0053】\n\n在第九实施例中,还可以通过将加热器结合到冷却头330a和330b来执行温度控制。\n\n【0054】\n\n\n\n适用于根据本发明的用于构成插入光源的磁电路11和12的永磁体的具体示例如图2所示。在图1中。如图14所示,ND-Fe-B永磁体是ND-Fe-B系统的永磁体,BR(残余磁通密度)在低温温度下降低。 No.6是PR-Fe-B永磁体,不显示旋转重排。霍尔元件用于测量磁场。 RT表示室温,LNT表示液氮温度(77K),LHET表示液氦温度(4.2K)。\n\n【0055】\n\n尽管已经在图3中描述了混合型。如图3所示,对于在这种类型中使用的软磁材料,可以使用渗透素,HO(Holmium),Dy(镝),纯铁等。每个实施例中的磁路可以是Halbach型或混合型。\n\n【0056】\n\n\n\n如上所述,根据根据本发明的插入光源,提供了以下功能和效果。通过冷却机构冷却,剩余磁通密度(BR)升高,并且可以在空间部分中形成比在常温下使用的更强的磁场。另外,通过冷却,独特的矫顽力(IHC)上升,并且辐射阻力随此而增加。由于磁路,保持器部分和保持器支撑部分通过冷却机构冷却,因此在拉到超高真空时不必执行烘烤。因此,没有必要考虑伴随烘焙的热退磁,并且可以使用高能量产品的永磁体。\n\n【0057】\n\n通常,在真空罐中,即使将其加热至约100℃,永久磁铁也不会加热降低永磁体。为了增加永磁体的真空,并且永磁体不会热降低。它是选择高素质所必需的。由于高IHC材料必须从互补关系中具有低BR,因此由磁路形成的磁通密度变低。\n\n【0058】\n\n另一方面,由于气体分子由于冷却永磁体而被捕获在磁体表面上,因此即使在不执行由于烘焙过程引起的情况下也可以获得目标的注意。也就是说,由于磁铁未加热,因此未选择高IHC材料以防止磁磁带\n\n它也很好。因此,可以选择高BR材料,并且由于BR在低温下增加,因此可以获得更高的磁通密度。\n\n【0059】\n\n\n\n在每个实施例中公开的结构可以在合理的范围内任意组合。');
INSERT INTO `os_patent_instruction_text` VALUES (13043, 22872, '[0001]This application is the U.S. National Phase under 35 U.S.C. §371 of International Application PCT/JP2005/000525, filed Jan. 18, 2005, which claims priority to Japanese Patent Application No. 2004-015878, filed Jan. 23, 2004. The International Application was not published under PCT Article 21(2) in English.\n\nTECHNICAL FIELD\n\n[0002]The present invention relates to an undulator comprising a first magnetic circuit for forming a periodic magnetic field, a first support body for supporting the first magnetic circuit, a second magnetic circuit arranged opposite to the first magnetic circuit, for forming a periodic magnetic field, a second support body for supporting the second magnetic circuit, a space formed between the oppositely arranged first and second magnetic circuits, for passing an electron beam, and a vacuum chamber for in-vacuuming the first magnetic circuit and the second magnetic circuit.\n\nBACKGROUND ART\n\n[0003]When an electron beam accelerated to about the speed of light in vacuum is bended in a magnetic field, radiation is emitted in a tangential direction of a traveling track of the electron beam and this is called a synchrotron radiation. The study for practical use of various techniques using characteristics such as high orientation, high intensity, high polarization by setting a light source that generates this synchrotron radiation at a straight section of an electron storage ring. In the electron storage ring of nowadays, many undulators that are high-intensity light sources each having a smaller beam section and higher beam directivity are provided.\n\n[0004]This undulator adopts a construction in which a first magnetic circuit and a second magnetic circuit are oppositely arranged through a space to form a periodic magnetic field through which an electron beam passes as shown in the following Japanese Unexamined Patent Publication No. 2000-206296 or In-vacuum undulators of SPring-8, T. Hara, T. Tanaka, T. Tanabe, X. M. Marechal, S. Okada and H. Kitamura: J. Synchrotron Radiation 5, 403 (1998) and Construction of an in-vacuum undulator for production of undulator x-rays in the 5-25 KeV region. S. Yamamoto, T. Shioya, M. Hara, H. Kitamura, X. W. Zhang, T. Mochizuki, H. Sugiyama and M. Ando; Rev. Sci. Instrum. 61 (1992) 400. In order to generate the periodic magnetic field, each of the first and second magnetic circuits includes many arranged permanent magnets. When a strong magnetic field is to be generated, the first magnetic circuit and the second magnetic circuit are to be brought close to each other, so that an interval (gap) of the space can be narrowed and the magnetic field is intensified. Thus, a construction in which the first magnetic circuit and the second magnetic circuit are contained in a vacuum chamber is adopted. In this construction, there is an advantage such that the gap can be narrowed as compared with a construction in which a vacuum chamber is provided between a first magnetic circuit and a second magnetic circuit.\n\n[0005]However, even when the gap is narrowed as described above, there is a limit in characteristics of the permanent magnet. In addition, when the gap is narrowed too much, there arises a new problem such that the permanent magnet is demagnetized due to radiation generated when the electron beam impinges on the permanent magnet. Therefore, there is a limit of intensifying the magnetic field only by a method of narrowing the gap.\n\nDISCLOSURE OF THE INVENTION\n\nProblem to be Solved by the Invention\n\n[0006]The present invention is made in view of the above circumstances and it is an object of the present invention to provide an undulator in which a magnetic field formed in a space can be intensified and radiation-proof characteristics are improved in a case where a first magnetic circuit and a second magnetic circuit are oppositely arranged with the space therebetween.\n\nMeans for Solving the Problem\n\n[0007]An undulator according to the present invention to solve the above problems is characterized by including:\n\n[0008]a first magnetic circuit for forming a periodic magnetic field;\n\n[0009]a first support body for supporting the first magnetic circuit;\n\n[0010]a second magnetic circuit arranged so as to be opposite to the first magnetic circuit, for forming a periodic magnetic field;\n\n[0011]a second support body for supporting the second magnetic circuit;\n\n[0012]a space formed between the oppositely arranged first and second magnetic circuits, for passing an electron beam;\n\n[0013]a vacuum chamber for vacuum-sealing the first magnetic circuit and the second magnetic circuit; and\n\n[0014]a cooling mechanism for cooling a permanent magnet constituting the first magnetic circuit and the second magnetic circuit below the room temperature.\n\n[0015]Hereinafter, a description will be made of a function and an effect of the undulator having the above construction. In order to form a periodic magnetic field, the first magnetic circuit and the second magnetic circuit are arranged oppositely with the space therebetween. The first magnetic circuit is supported by the first support body and the second magnetic circuit is supported by the second support body. The first and second magnetic circuits are in-vacuumed in the vacuum chamber. When an electron beam is passed through the space in which the periodic magnetic field is generated, the synchrotron radiation can be generated. Each of the first and second magnetic circuits includes permanent magnets and the cooling mechanism for cooling the permanent magnet below the room temperature. When the permanent magnet is cooled, there appear characteristics in which a remanent flux density (Br) and magnetic coercive force (designated by iHc which is a value of H when an I-H curve (demagnetization curve) crosses an H axis and called intrinsic magnetic coercive force) are increased. When the remanent flux density is increased, magnetic characteristics are improved, so that an intense magnetic field can be formed in the space. In addition, when the magnetic coercive force is increased, it is known that radiation-proof characteristics are improved. As a result, when the first magnetic circuit and the second magnetic circuit are formed oppositely with the space therebetween, there can be provided an undulator in which the magnetic field formed in the space can be intensified and the radiation-proof characteristics can be improved.\n\n[0016]Conventionally, the magnetic circuit is cooled by circulating hot water having a temperature about 120° C. in a baking process so that the permanent magnet may not be heated up to a predetermined temperature or more, and by circulating cooling water having a temperature about the room temperature so that the temperature of the magnetic circuit may not become unstable by the heat from the electron beam when the magnetic circuit is used.\n\n[0017]Preferably, the undulator according to the present invention further includes:\n\n[0018]an gap changing mechanism for changing an gap of the space;\n\n[0019]a refrigerant passing tube provided in the cooling mechanism, for passing a refrigerant; and\n\n[0020]a connecting component for connecting the refrigerant passing tube to each of the first support body and the second support body, in which the connecting component has flexibility and allows the gap changing mechanism to change the gap.\n\n[0021]By providing the gap changing mechanism, the gap of the space can be changed, so that the intensity of the magnetic field can be adjusted. In addition, the magnetic circuit can be easily assembled when it is incorporated. As the cooling mechanism, the refrigerant passing tube for passing the refrigerant is provided and this is connected to the first support body and the second support body by the connecting component. Therefore, the magnetic circuit supported by the support body can be cooled through the connecting component. Furthermore, since the connecting component has flexibility, even when the gap of the space is changed (even when the first and second support bodies are moved) with the refrigerant passing tube fixed, movement is easy.\n\n[0022]Another cooling mechanism according to the present invention preferably includes:\n\n[0023]a first refrigerant passing tube provided to cool the first magnetic circuit, for passing the refrigerant; and\n\n[0024]a second refrigerant passing tube provided to cool the second magnetic circuit, for passing the refrigerant, in which the first refrigerant passing tube is fixed to the first support body and the second refrigerant passing tube is fixed to the second support body.\n\n[0025]In this case, the first refrigerant passing tube is fixed to the first support body and the second refrigerant passing tube is fixed to the second support body. Thus, the magnetic circuit supported by the support body can be cooled. In addition, according to this construction, when the first and second support bodies are moved, since the refrigerant passing tube fixed to each support body is moved together, a connecting component having flexibility is not necessary.\n\n[0026]A still another cooling mechanism according to the present invention preferably includes:\n\n[0027]a first refrigerant passing tube provided to cool the first magnetic circuit, for passing the refrigerant; and\n\n[0028]a second refrigerant passing tube provided to cool the second magnetic circuit, for passing the refrigerant, in which the first refrigerant passing tube penetrates the inside of the first support body and the second refrigerant passing tube penetrates the inside of the second support body.\n\n[0029]Since the refrigerant passes through inside of the support body, the magnetic circuit can be efficiently cooled.\n\n[0030]Preferably, the undulator according to the present invention includes an gap changing mechanism for changing an gap of the space;\n\n[0031]a cooling head provided in the cooing mechanism and cooled by a freezing machine, and\n\n[0032]a connecting component for connecting the cooling head to each of the first support body and the second support body, in which the connecting component has flexibility and allows the gap changing mechanism to change the gap.\n\n[0033]Although the example in which the cooling mechanism includes the refrigerant passing tube was described above, the cooling mechanism may includes the freezing machine. In this case, the cooling heads of the freezing machines are connected to the first support body and the second support body through the connecting components. In this case, since the connecting component has flexibility, when the gap of the space is changed, the connecting component can easily follow it.\n\n[0034]According to the present invention, a hollow part is preferably formed in each of a first support shaft for supporting the first support body and a second support shaft for supporting the second support body.\n\n[0035]When the cooling mechanism for cooling the magnetic circuit is provided, it is necessary to prevent heat from being transferred from the outside of the undulator. Since the support shafts for supporting the first and second support bodies need to be strong, it is formed of metal. However, metal has high thermal conductivity, and therefore the heat from the outside is likely to be transferred. Thus, the support shaft is made hollow, so that the heat is not likely to be transferred. As a result, the magnetic circuit can be set at a desired cooling temperature.\n\n[0036]According to the present invention, it is preferable to provide a first temperature sensor for detecting a temperature of the first magnetic circuit;\n\n[0037]a first heater for heating the first magnetic circuit;\n\n[0038]a second temperature sensor for detecting a temperature of the second magnetic circuit;\n\n[0039]a second heater for heating the second magnetic circuit; and\n\n[0040]a temperature control unit for controlling the first heater and the second heater on the basis of temperature measured data provided by the first and second temperature sensors.\n\n[0041]When the permanent magnet is cooled, there is a permanent magnet which shows characteristics in which the remanent flux density is increased as the temperature is lowered, but when the temperature is lowered to a certain temperature or less, the remanent flux density is reduced. Therefore, when the magnetic circuit includes the permanent magnet, it is necessary to control the cooling temperature. Thus, since the heater for heating the magnetic circuit, the temperature sensor for detecting the temperature of the magnetic circuit, and the temperature control unit for controlling the heater are provided, the cooling temperature can be appropriately controlled.\n\n[0042]According to the present invention, it is preferable that each of the first support body and the second support body has a holder for mounting the permanent magnet, and a holder support for supporting the holder, and\n\n[0043]a material of the holder has a thermal expansion coefficient greater than or equal to that of the holder support.\n\n[0044]A process for assembling the permanent magnet in the holder is performed at the room temperature, and when the undulator is actually operated, the temperature is cooled to a desired temperature. In this case, when the material of the holder support has a thermal expansion coefficient greater than that of the holder, the holder is deformed due to a difference in thermal expansion coefficient when cooled, which causes a damage of the magnetic circuit. Thus, the holder and the holder support are formed of the same material (having the same thermal expansion coefficient) or the holder is formed of the material having a thermal expansion coefficient greater than that of the holder support, so that the holder is not deformed due to a difference in thermal expansion coefficient.\n\nBRIEF DESCRIPTION OF THE DRAWINGS\n\n[0045]FIG. 1 is a transverse sectional view showing an undulator according to a first embodiment;\n\n[0046]FIG. 2 is a view showing a construction of a magnetic circuit;\n\n[0047]FIG. 3 is a view showing another construction of the magnetic circuit;\n\n[0048]FIG. 4 is a view showing a control block diagram regarding temperature control;\n\n[0049]FIG. 5 is a graph showing characteristics of a magnet;\n\n[0050]FIG. 6 is a transverse sectional view showing an undulator according to a second embodiment;\n\n[0051]FIG. 7 is a transverse sectional view showing an undulator according to a third embodiment;\n\n[0052]FIG. 8 is a transverse sectional view showing an undulator according to a fourth embodiment;\n\n[0053]FIG. 9 is a transverse sectional view showing an undulator according to a fifth embodiment;\n\n[0054]FIG. 10 is a transverse sectional view showing an undulator according to a sixth embodiment;\n\n[0055]FIG. 11 is a transverse sectional view showing an undulator according to a seventh embodiment;\n\n[0056]FIG. 12 is a transverse sectional view showing an undulator according to a eighth embodiment;\n\n[0057]FIG. 13 is a transverse sectional view showing an undulator according to a ninth embodiment; and\n\n[0058]FIG. 14 is a view showing a concrete example of permanent magnets.\n\nBEST MODE FOR CARRYING OUT THE INVENTION\n\n[0059]Preferred embodiments of an undulator according to the present invention will be described with reference to the drawings. FIG. 1 is a transverse sectional view showing an undulator according to a first embodiment. FIG. 2 is a conceptual view showing a construction of a magnetic circuit. FIG. 3 is a conceptual view showing another construction of the magnetic circuit.\n\n[0060]First, a description will be made of the magnetic circuit. FIG. 2 shows a so-called Halbach type of magnetic circuit, in which a first magnetic circuit 11 and a second magnetic circuit 12 are disposed with a space 13 therebetween. The first magnetic circuit 11 includes many groups of four permanent magnets 11a to 11d which are arranged in a traveling direction of an electron beam. A magnetization direction of each of the permanent magnets 11a to 11d is shown by an arrow. The second magnetic circuit 12 also comprises many groups of four permanent magnets 12a to 12d which are arranged in the traveling direction of the electron beam. Thus, “λ” designates a period of a magnetic field as shown in the drawing. An arrangement pitch of this magnet can be changed appropriately according to its purpose.\n\n[0061]A gap of the space 13 is designated by “g”. This gap “g” can be changed by a gap changing mechanism. By changing the gap, intensity of the magnetic field can be adjusted. When the permanent magnets are arranged as shown in FIG. 2, a periodic magnetic field can be formed in the space 13. When the electron beam is passed through the space 13, the electron beam is affected by the periodic magnetic field and goes through like snake. A weaving surface M of the electron beam is parallel to magnet surfaces of the opposed first and second magnetic circuits. When the electron beam weays through it, a desired synchrotron radiation can be generated.\n\n[0062]Although the magnetic circuit shown in FIG. 2 is constituted by the permanent magnets only, a soft magnet is disposed between permanent magnets in a so-called hybrid type of magnetic circuit as shown in FIG. 3. That is, a first magnetic circuit includes permanent magnets 11A and 11C and soft magnetic material 11B and 11D which are alternatively arranged, and a second magnetic circuit includes permanent magnets 12A and 12C and soft magnetic material 12B and 12D which are alternately arranged. Each magnetization direction (direction of a magnetic flux) is shown by an arrow. According to the undulator of the present invention, any magnetic circuit may be used and it is not limited to a magnetic circuit having a specific construction.\n\nFirst Embodiment\n\n[0063]Next, a description will be made of a construction of the undulator according to a first embodiment. FIG. 1 is the transverse sectional view showing the undulator cut along a surface perpendicular to the traveling direction of the electron beam. The first magnetic circuit 11 and the second magnetic circuit 12 are oppositely arranged with the space 13 therebetween. As described above with reference to FIG. 2, according to the first magnetic circuit 11, many permanent magnets “m” are arranged along the traveling direction of the electron beam (direction perpendicular to a sheet surface of FIG. 1). Similarly, many permanent magnets “m” are arranged in the second magnetic circuit 12. A concrete example of a preferred permanent magnet “m” will be described below.\n\n[0064]A first support body 21 is provided to mount and support the first magnetic circuit 11. The first support body 21 includes a first magnet holder 21a (corresponding to a holder) and a first magnet mounting beam 21b (corresponding to a holder support). Conventionally, since the temperature is heated up to a high temperature in a baking process, the first magnet holder 21a is formed of oxygen free copper and the first magnet mounting beam 21b is formed of aluminum. However, according to the present invention, both are formed of oxygen free copper. As will be described below, when the magnetic circuits 11 and 12 are cooled, although both magnet holder 21a and the magnet mounting beam 21b shrink, since they are formed of the same material, the magnet holder 21a is not deformed by the shrinkage in size. Therefore, even when the magnetic circuits 11 and 12 are cooled, the permanent magnet “m” is not deformed and not damaged.\n\n[0065]In addition, the first magnet holder 21a may be formed of aluminum and the first magnet mounting beam 21b may be formed of oxygen free copper. In this case also, since a thermal expansion coefficient of aluminum is higher than that of oxygen free copper, even when the magnetic circuits 11 and 12 are cooled, they are not deformed in a damaging direction.\n\n[0066]A second support body 22 for mounting and supporting the second magnetic circuit 12, and a second magnet holder 22a and a second magnet mounting beam 22b are similar to those of the first magnetic circuit 11.\n\n[0067]Hereinafter, a description will be made of a construction of a cooling mechanism to cool the magnetic circuits 11 and 12. There is provided a refrigerant passing tube 30 through which a refrigerant is passed, that is, a pair of refrigerant passing tubes 30 are provided on both lateral sides of the space 13. Although the refrigerant is not limited to a specific one, it is preferable that the refrigerant is a liquefied refrigerant such as liquid nitrogen or liquid helium. The refrigerant passing tube 30 is also arranged in the traveling direction of the electron beam. The refrigerant is circulated through a predetermined circulation path.\n\n[0068]The refrigerant passing tube 30 and each of the first and second support bodies 21 and 22 are connected through connecting components 31. The connecting component 31 has a configuration having flexibility (which can be accordion-folded as shown in the drawing below), so that even when the first and second support bodies 21 and 22 are vertically moved, the connection state between each of the first and second support bodies 21 and 22 and the refrigerant passing tube 30 can be maintained. The connecting component 31 is formed of a conductor having high thermal conductivity (copper (oxygen free copper or beryllium copper) and aluminum, for example). In addition, the refrigerant passing tube 30 is fixed.\n\n[0069]Although the connecting component 31 is made flexible for the above reason, it is made flexible with the purpose of further providing thermal resistance to some extent. When the thermal resistance is provided, temperature control can be performed with higher precision as will be described below.\n\n[0070]When the magnetic circuits 11 and 12 are cooled by the cooling mechanism so that their temperatures are set so as to be not more than the room temperature but not less than that of the liquid nitrogen or liquid helium. The temperature to be set varies according to a kind of refrigerant to be used or a kind of permanent magnet “m” which constitutes the magnetic circuits 11 and 12.\n\n[0071]Hereinafter, a description will be made of an effect provided by cooling the permanent magnet “m”. As general characteristics of the permanent magnet, a remanent flux density “Br” becomes high as the permanent magnet is cooled. By using this characteristics, a strong magnetic field can be generated in the space 13. In addition, when the permanent magnet is cooled, its magnetic coercive force is increased. Thus, its radiation-proof characteristics are enhanced. Furthermore, when the permanent magnet is cooled, desorption of a gas molecule from a surface of the permanent magnet in a vacuum chamber 1 is reduced. Therefore, ultrahigh vacuum can be implemented in the vacuum chamber 1 without performing the baking process for the magnetic circuits 11 and 12. Although they are heated up to a predetermined temperature when the baking process is performed, a problem such as heat demagnetization is generated when the permanent magnet is heated. Therefore, conventionally, it is necessary to select a material having high magnetic coercive force and a low remanent flux density at the room temperature for the permanent magnet in view of the heat demagnetization in the baking process. However, according to the present invention, since it is not necessary to consider such heat demagnetization, a material having low magnetic coercive force and a high remanent flux density at the room temperature can be selected, so that a strong magnetic field can be generated in the space 13.\n\n[0072]The first and second magnetic circuits 11 and 12 are in-vacuumed in the vacuum chamber 1. When the magnetic circuits 11 and 12 are in-vacuumed in the vacuum chamber 1, the gap “g” can be small. In addition, since a heat shielding effect can be provided when they are in-vacuumed, the heat in a room where the undulator R is set can be prevented from being transferred to the magnetic circuits 11 and 12 through the vacuum chamber 1.\n\n[0073]The first and second support bodies 21 and 22 supporting the first and second magnetic circuits 11 and 12, respectively can be moved vertically (shown by arrows A and B in FIG. 1) by the gap changing mechanism (not shown). As the gap changing mechanism, the mechanism disclosed in the above-described Japanese Unexamined Patent Publication No. 2000-206296 or In-vacuum undulators of SPring-8, T. Hara, T. Tanaka, T. Tanabe, X. M. Marechal, S. Okada and H. Kitamura: J. Synchrotron Radiation 5, 403 (1998) can be used, for example. The gap “g” of the space 13 can be changed by the gap changing mechanism. By changing the gap “g”, the intensity of the magnetic field in the space 13 can be adjusted as desired.\n\n[0074]An upper part of the first support body 21 is supported by a first support shaft 14. The first support shaft 14 is formed of metal and its inside is hollow. Since almost an entire part of the first support shaft 14 is disposed outside the vacuum chamber 1, the heat of the room (outside the vacuum chamber) is transferred to the first support shaft 14 to raise a temperature of the first magnetic circuit 11. In order to prevent such temperature raise as much as possible, the first support shaft 14 is made hollow to prevent the temperature from being transferred. A lower part of the second support body 22 is also supported by a second support shaft 15 and its inside is hollow for the same reason as the above. Thus, while the support shafts 14 and 15 are kept strong, thermal conductivity thereof is lowered. A bellows 16 is provided around each of the support shafts 14 and 15, so that while the vacuum chamber 1 is held with vacuum, the support shafts 14 and 15 can be vertically moved.\n\n[0075]Since the undulator is set in the room at the room temperature, it is necessary to avoid the radiation heat from infrared rays and the like as much as possible. Although the magnetic circuits 11 and 12 are vacuum-insulated by the vacuum chamber 1, the magnetic circuits 11 and 12 could not be sufficiently cooled due to the radiation heat. Thus, it is necessary to provide measures to reflect the heat. For example, it is preferable that surfaces of the magnet holders 21a and 22a and the magnet mounting beams 21b and 22b of the support bodies 21 and 22, are respectively plated with gold so that they can reflect the radiation heat.\n\n[0076]A first heater 21c is provided on a back surface of the first magnet mounting beam 21b of the first support body 21. Similarly, a second heater 22c is provided in the second support body 22. In addition, temperature sensors 21d and 22d are buried in the first and second magnet mounting beams 21b and 22b, respectively (not shown in FIG. 1). FIG. 4 is a control block diagram showing a construction of a temperature control unit 23. Temperature data to control cooling of the permanent magnet is set in a temperature setting unit 24. The temperature control unit 23 compares temperature data measured by the temperature sensors 21d and 22d with the set temperature data and controls the heaters 21c and 22c separately so that the temperature may become a desired temperature.\n\n[0077]As the heater, a sheath heater can be used, for example. The heaters 21c and 22c are mounted such that they are pressed onto the back sides of the magnet mounting beams 21b and 22b by a copper plate and the like and screwed, respectively. As the temperature sensor, a temperature measuring resistor or a thermocouple using platinum may be used.\n\n[0078]Although the temperature control unit 23 is not always necessary, it is preferably provided in the following case. There is no problem in a case where as the characteristics of the permanent magnet, the magnetic characteristics is enhanced as the temperature of the permanent magnet is lowered, but there is a permanent magnet material which remanent flux density shows a peak value at a specific low temperature as shown in FIG. 5. For example, in a case where the permanent magnet is a rare earth-iron-boron magnet which causes spin reorientation at a temperature of TSR (spin reorientation temperature) or less, it is necessary to control the temperatures of the magnetic circuits 11 and 12 so that they may not be cooled to the TSR or less.\n\nSecond Embodiment\n\n[0079]Hereinafter, a description will be made of an undulator according to a second embodiment with reference to FIG. 6. The same reference numbers are allotted to the components having the same functions as those in the first embodiment and their descriptions will not be repeated.\n\n[0080]According to the second embodiment, a pair of first refrigerant passing tubes 30A and a pair of second refrigerant passing tubes 30B are provided and each first refrigerant passing tube 30A is connected to a first support body 21 through a connecting component 31A. Similarly, each second refrigerant passing tube 30B is connected to a second support body 22 through a connecting component 31B. Each of the connecting components 31A and 31B has flexibility. Thus, although each of the refrigerant passing tubes 30A and 30B is fixed to a vacuum chamber 1, even when the first and second support bodies 21 and 22 are vertically moved, connecting states between the support bodies 21 and 22 and the refrigerant passing tubes 30A and 30B can be maintained, respectively.\n\nThird Embodiment\n\n[0081]Hereinafter, a description will be made of an undulator according to a third embodiment with reference to FIG. 7. This embodiment is different from the second embodiment in that first and second refrigerant passing tubes 30A and 30B are fixed to first and second support bodies 21 and 22 through fixing units 32A and 32B. The fixing units 32A and 32B are formed of metal plate (such as a copper plate (beryllium copper and equivalent), a stainless plate or an aluminum plate). When the first support body 21 and the second support body 22 are vertically moved, the first refrigerant passing tube 30A and the second refrigerant passing tube 30B are also vertically moved, respectively. Therefore, a connecting component having flexibility is not used. In addition, when it is necessary for the fixing units 32A and 32B to have thermal resistance, it is preferable that those are formed of the stainless plate.\n\nFourth Embodiment\n\n[0082]Hereinafter, a description will be made of an undulator according to a fourth embodiment with reference to FIG. 8. This embodiment is different from the third embodiment in that first and second refrigerant passing tubes 30A and 30B are directly fixed to side surfaces of first and second support bodies 21 and 22, respectively. The fixing unit shown in the third embodiment is not provided. Similar to the third embodiment, when the first support body 21 and the second support body 22 are vertically moved, the first refrigerant passing tube 30A and the second refrigerant passing tube 30B are also vertically moved, respectively. Therefore, a connecting component having flexibility is not used. Since the refrigerant passing tubes 30A and 30B are directly mounted on the support bodies 21 and 22, respectively, a cooling process can be efficiently performed. In addition, although a heater is not provided in the fourth embodiment, a temperature can be controlled by varying the temperature of a refrigerant. This is similar to the next fifth embodiment.\n\nFifth Embodiment\n\n[0083]Hereinafter, a description will be made of an undulator according to a fifth embodiment with reference to FIG. 9. According to this embodiment, a first refrigerant passing tube 30A is buried in a first magnet mounting beam 21b of a first support body 21. A second refrigerant passing tube 30B is similarly buried in a second magnet mounting beam 22b. When the first and second support bodies 21 and 22 are vertically moved, the first and second refrigerant passing tubes 30A and 30B are moved together, respectively. Since the refrigerant passing tubes 30A and 30B are buried in the support bodies 21 and 22, respectively, a cooling process can be efficiently performed.\n\nSixth Embodiment\n\n[0084]Hereinafter, a description will be made of an undulator according to a sixth embodiment with reference to FIG. 10. According to embodiments after FIG. 10, a cooling mechanism using a freezing machine 33 will be described. As shown in FIG. 10, a pair of freezing machines 33 is disposed on both lateral sides of a vacuum chamber 1 and a cooling head 330 is inserted into the vacuum chamber 1. An upper side of the cooling head 330 is connected to a first support body 21 by a first connecting component 31A. A lower side of the cooling head 330 is connected to a second support body 22 by a second connect', '[0001] 此应用程序是美国法典第35条规定的美国国家阶段。  2005年1月18日提交的国际申请PCT / JP2005 / 000525的§371,要求2004年1月23日提交的日本专利申请No.2004-015878的优先权。国际申请未根据PCT第21(2)条公开 ) 用英语讲。 \n\n 技术领域 \n\n [0002] 波动器技术领域本发明涉及一种波动器,包括:第一磁场,用于形成周期性磁场;第一支撑体,用于支撑第一磁场;与第二磁场相对设置的第二磁场,用于形成周期性磁场;以及 第二支撑体,用于支撑第二磁路;在相对布置的第一和第二磁路之间形成的空间,用于通过电子束;以及真空室,用于向第一磁路和第二磁路注入真空。 \n\n 背景技术 \n\n [0003] 当在真空中加速到接近光速的电子束在磁场中弯曲时,会在电子束的行进轨迹的切线方向上发射辐射,这称为同步辐射。 通过设置在电子存储环的笔直部分产生此同步加速器辐射的光源,对具有高取向,高强度,高极化等特性的各种技术进行实际使用的研究。 在当今的电子存储环中,提供了许多起伏器,它们是高强度光源,每一个具有较小的束截面和较高的束指向性。 \n\n [0004] 该波荡器采用如下结构,其中,第一磁路和第二磁路在空间中相对地布置,以形成电子束通过的周期性磁场,如以下日本未审查专利公开No.2000-206296或In  SPring-8的真空起伏器,T。Hara,T。Tanaka,T。Tanabe,XM Marechal,S。Okada和H.Kitamura:同步辐射第5卷,第403页(1998年)和用于制造真空起伏器的构造 在5-25 KeV范围内产生波状X射线。  S. Yamamoto,T。Shioya,M。Hara,H.Kitamura,X.W。Zhang,T.Mochizuki,H.Sugiyama和M.Ando; 牧师 仪器 参见图61(1992)400。为了产生周期性磁场,第一和第二磁路中的每个包括许多布置的永磁体。 当要产生强磁场时,使第一磁路和第二磁路彼此靠近,从而可以缩小空间的间隔(间隙)并增强磁场。 因此,采用其中第一磁路和第二磁路包含在真空室中的构造。 在该结构中,与在第一磁路和第二磁路之间设置真空室的结构相比,具有能够缩小间隙的优点。 \n\n [0005] 但是,即使如上所述使间隙变窄,永磁体的特性也受到限制。 另外,当间隙过窄时,出现新的问题,即由于电子束撞击永磁体时产生的辐射,永磁体被消磁。 因此,仅通过缩小间隙的方法来增强磁场是有限的。 \n\n 发明内容 \n\n 本发明要解决的问题 \n\n [0006] 鉴于上述情况而做出本发明,并且本发明的目的是提供一种起伏器,其中在第一磁场的情况下,可以增强在空间中形成的磁场并且改善防辐射特性。 电路和第二磁路相对地布置,在它们之间具有空间。 \n\n 解决问题的手段 \n\n [0007] 根据本发明的用于解决上述问题的波荡器的特征在于包括: \n\n [0008] 第一磁路,用于形成周期磁场; \n\n [0009] 第一支撑体,用于支撑第一磁路; \n\n [0010] 第二磁路布置成与第一磁路相反,用于形成周期性磁场。 \n\n [0011] 第二支撑体,用于支撑第二磁路; \n\n [0012] 在相对布置的第一和第二磁路之间形成的空间,用于使电子束通过。 \n\n [0013] 真空室,用于真空密封第一磁路和第二磁路。 和 \n\n [0014] 冷却机构,用于将构成第一磁路和第二磁路的永磁体冷却至室温以下。 \n\n [0015] 在下文中,将描述具有以上构造的波荡器的功能和效果。 为了形成周期磁场,第一磁路和第二磁路相对地布置,在它们之间具有空间。 第一磁路由第一支撑体支撑,第二磁路由第二支撑体支撑。 第一和第二磁路在真空室中是真空的。 当电子束穿过其中产生周期磁场的空间时,可以产生同步辐射。 第一和第二磁路中的每一个都包括永磁体和用于将永磁体冷却至室温以下的冷却机构。 当永磁体冷却时,会出现如下特性:剩余磁通密度(Br)和磁矫顽力(由iHc表示,当IH曲线(退磁曲线)与H轴交叉时为H的值,称为固有磁矫顽力)。 力)增加。 当剩余磁通密度增加时,磁特性得到改善,从而可以在空间中形成强磁场。 另外,已知当提高矫顽磁力时,耐放射线特性提高。 结果,当第一磁路和第二磁路在它们之间的空间相对地形成时,可以提供一种起伏器,其中可以增强在该空间中形成的磁场并且可以改善防辐射特性。 \n\n [0016] 常规地,通过在烘烤过程中使温度约为120℃的热水循环以使永磁体不被加热到预定温度或更高,并通过使温度大约为120℃的冷却水循环来冷却磁路。 室温下使用时,磁路的温度不会因来自电子束的热量而变得不稳定。 \n\n [0017] 优选地,根据本发明的波荡器还包括: \n\n [0018] 间隙改变机构,用于改变空间的间隙; \n\n [0019] 设置在冷却机构中的制冷剂通过管,用于使制冷剂通过。 和 \n\n [0020] 用于将制冷剂通过管连接到第一支撑体和第二支撑体中的每一个的连接部件,其中该连接部件具有挠性并且允许间隙改变机构改变间隙。 \n\n [0021] 通过提供间隙改变机构,可以改变空间的间隙,从而可以调节磁场强度。 另外,当结合了磁路时,可以容易地组装磁路。 作为冷却机构,设有使制冷剂通过的制冷剂通过管,该制冷剂通过管通过连接部件与第一支撑体和第二支撑体连接。 因此,可以通过连接部件冷却由支撑体支撑的磁路。 此外,由于连接部件具有挠性,因此即使在制冷剂通过管固定的状态下改变间隙(即使使第一支承体和第二支承体移动),移动也容易。 \n\n [0022] 根据本发明的另一种冷却机构优选地包括: \n\n [0023] 第一制冷剂通过管,其设置成冷却第一磁路,以使制冷剂通过。 和 \n\n [0024] 第二制冷剂通过管被设置为冷却第二磁路,以使制冷剂通过,其中第一制冷剂通过管被固定到第一支撑体,第二制冷剂通过管被固定到第二支撑体。 \n\n [0025] 在这种情况下,第一制冷剂通过管固定在第一支撑体上,第二制冷剂通过管固定在第二支撑体上。 因此,可以冷却由支撑体支撑的磁路。 另外,根据该结构,在使第一支承体和第二支承体移动时,由于固定于各支承体的制冷剂通过管一起移动,因此不需要具有挠性的连接部件。 \n\n [0026] 根据本发明的又一冷却机构优选地包括: \n\n [0027] 第一制冷剂通过管,其设置成冷却第一磁路,以使制冷剂通过。 和 \n\n [0028] 第二制冷剂通过管设置成冷却第二磁路,以使制冷剂通过,其中第一制冷剂通过管穿透第一支撑体的内部,并且第二制冷剂通过管穿透第二支撑体的内部。 \n\n [0029] 由于制冷剂通过支撑体的内部,因此可以有效地冷却磁路。 \n\n [0030] 优选地,根据本发明的波荡器包括用于改变空间的间隙的间隙改变机构。 \n\n [0031] 设置在冷却机构中并由冷冻机冷却的冷却头,以及 \n\n [0032] 用于将冷却头连接到第一支撑体和第二支撑体中的每一个的连接部件,其中,连接部件具有挠性并且允许间隙改变机构改变间隙。 \n\n [0033] 尽管上面描述了冷却机构包括制冷剂通过管的示例,但是冷却机构可以包括冷冻机。 在这种情况下,冷冻机的冷却头通过连接部件连接到第一支撑体和第二支撑体。 在这种情况下,由于连接部件具有挠性,所以当改变空间的间隙时,连接部件可以容易地跟随它。 \n\n [0034] 根据本发明,优选在用于支撑第一支撑体的第一支撑轴和用于支撑第二支撑体的第二支撑轴的每一个中形成中空部分。 \n\n [0035] 当提供用于冷却磁路的冷却机构时,必须防止热量从波荡器的外部传递。 由于用于支撑第一支撑体和第二支撑体的支撑轴必须坚固,因此其由金属形成。 然而,金属具有高的热导率,因此来自外界的热量可能被传递。 因此,支撑轴被制成中空的,从而热量不可能被传递。 结果,可以将磁路设置在期望的冷却温度。 \n\n [0036] 根据本发明,优选的是提供用于检测第一磁路的温度的第一温度传感器。 \n\n [0037] 第一加热器,用于加热第一磁路; \n\n [0038] 第二温度传感器,用于检测第二磁路的温度; \n\n [0039] 第二加热器,用于加热第二磁路; 和 \n\n [0040] 温度控制单元,用于基于由第一温度传感器和第二温度传感器提供的温度测量数据来控制第一加热器和第二加热器。 \n\n [0041] 当永磁体被冷却时,存在具有如下特性的永磁体,其中,随着温度降低,剩余磁通密度增加,但是当温度降低至特定温度以下时,剩余磁通密度降低。 因此,当磁路包括永磁体时,必须控制冷却温度。 因此,由于提供了用于加热磁路的加热器,用于检测磁路的温度的温度传感器以及用于控制加热器的温度控制单元,所以可以适当地控制冷却温度。 \n\n [0042] 根据本发明,优选的是,第一支撑体和第二支撑体分别具有用于安装永磁体的支架和用于支撑该支架的支架支架,以及 \n\n [0043] 支架的材料的热膨胀系数大于或等于支架的热膨胀系数。 \n\n [0044] 在室温下执行将永磁体组装在保持器中的过程,并且当实际操作波荡器时,将温度冷却至所需温度。 在这种情况下,当保持器支撑件的材料的热膨胀系数大于保持器的热膨胀系数时,由于冷却时保持器由于热膨胀系数的差异而变形,这导致磁路损坏。 因此,保持器和保持器支撑件由相同的材料(具有相同的热膨胀系数)形成,或者保持器由热膨胀系数大于保持器支撑件的热膨胀系数的材料形成,从而保持器不变形。 由于热膨胀系数不同。 \n\n 附图的简要说明 \n\n [0045] 图。 附图说明图1是表示第一实施方式的波荡器的横截面图。 \n\n [0046] 图。 图2是表示磁路的结构的图。 \n\n [0047] 图。 图3是表示磁路的另一结构的图。 \n\n [0048] 图。 图4是表示温度控制的控制框图的图。 \n\n [0049] 图。 图5是表示磁铁的特性的图。 \n\n [0050] 图。 图6是表示第二实施方式的波荡器的横截面图。 \n\n [0051] 图。 图7是表示第三实施方式的波荡器的横截面图。 \n\n [0052] 图。 图8是表示第四实施方式的波荡器的横截面图。 \n\n [0053] 图。 图9是表示第五实施方式的波荡器的横截面图。 \n\n [0054] 图。 图10是表示第六实施方式的波荡器的横截面图。 \n\n [0055] 图。 图11是表示第七实施方式的波荡器的横截面图。 \n\n [0056] 图。 图12是表示第八实施方式的波荡器的横截面图。 \n\n [0057] 图。 图13是表示第九实施方式的波荡器的横截面图。 和 \n\n [0058] 图。 图14是示出永磁体的具体示例的图。 \n\n 实施本发明的最佳模式 \n\n [0059] 将参考附图描述根据本发明的波荡器的优选实施例。 图。 图1是示出根据第一实施例的波荡器的横截面图。 图。 图2是示出磁路的构造的概念图。 图。 图3是示出磁路的另一结构的概念图。 \n\n [0060] 首先,将描述磁路。 图。 图2示出了所谓的Halbach型磁路,其中第一磁路 11  第二个磁路 12  留有空间 13  之间。 第一磁路 11  包括许多组的四个永磁体 11 a  至 11 d  它们沿电子束的行进方向排列。 每个永磁体的磁化方向 11 a  至 11 d  如箭头所示。 第二磁路 12 还包括许多组的四个永磁体 12 a  至 12 d  它们沿电子束的传播方向排列。 因此,“λ”表示如图所示的磁场的周期。 该磁铁的配置节距可以根据其目的适当地改变。 \n\n [0061] 空间的差距 13  用“ g”表示。 可以通过间隙改变机构来改变该间隙“ g”。 通过改变间隙,可以调节磁场强度。 当如图2所示布置永磁体时,永磁体被设置为可旋转。 参照图2,可以在空间中形成周期性的磁场 13 。 当电子束穿过空间时 13 ,电子束受周期磁场的影响像蛇一样穿过。 电子束的编织表面M平行于相对的第一和第二磁路的磁体表面。 当电子束穿过它时,会产生所需的同步辐射。 \n\n [0062] 尽管在图1中示出了磁路。 尽管图2所示的磁路仅由永磁体构成,但是在如图1所示的所谓的混合型磁路中,在永磁体之间设置软磁体。 即,第一磁路包括永磁体。 11 和 11 C和软磁材料 11 B和 11 D被交替布置,并且第二磁路包括永磁体 12 和 12 C和软磁材料 12 B和 12 D这是交替排列的。 每个磁化方向(磁通量的方向)用箭头表示。 根据本发明的波荡器,可以使用任何磁路,并且不限于具有特定结构的磁路。 \n\n 第一实施例 \n\n [0063] 接下来,将描述根据第一实施例的波荡器的构造。 图。 图1是示出了在垂直于电子束的行进方向的表面上切开的波荡器的横截面图。 第一磁路 11  第二磁路 12  与空间相对布置 13  之间。 如以上参考图2所描述的。  2,按先磁路 11 沿电子束的行进方向(垂直于图1的片材表面的方向)布置许多永磁体“ m”。 类似地,在第二磁路中布置许多永磁体“ m” 12 。 下面将描述优选的永磁体“ m”的具体示例。 \n\n [0064] 第一支撑体 21  提供用于安装和支撑第一磁路 11 。 第一支撑体 21  包括一个第一磁铁支架 21 a  (对应于支架)和第一块磁铁安装梁 21 b  (对应于持有人的支持)。 通常,由于在烘烤过程中温度被加热到高温,因此第一磁体保持器 21 a  由无氧铜和第一块磁铁安装梁组成 21 b  由铝制成。 然而,根据本发明,两者均由无氧铜形成。 如下所述,当磁路 11  和 12  尽管两个磁铁座都被冷却 21 a  和磁铁安装梁 21 b  收缩,因为它们是用相同的材​​料制成的,所以磁铁座 21 a  不会因尺寸缩小而变形。 因此,即使当磁路 11  和 12  冷却后,永磁体“ m”不会变形也不会损坏。 \n\n [0065] 另外,第一个磁铁支架 21 a  可以由铝和第一磁铁安装梁制成 21 b  可以由无氧铜形成。 同样在这种情况下,即使在磁路中,铝的热膨胀系数也比无氧铜的热膨胀系数高。 11  和 12  冷却后,它们不会在破坏方向上变形。 \n\n [0066] 第二个支撑体 22  用于安装和支撑第二磁路 12 和第二个磁铁座 22 a  和第二块磁铁安装梁 22 b  与第一个磁路相似 11 。 \n\n [0067] 在下文中,将描述用于冷却磁路的冷却机构的构造。 11  和 12 。 设有制冷剂通过管 30  制冷剂通过的通道,即一对制冷剂通过管 30  设置在空间的两侧 13 。 尽管制冷剂不限于特定的制冷剂,但是优选制冷剂是液化制冷剂,例如液氮或液氦。 制冷剂通过管 30  在电子束的行进方向上还布置有电子束。 制冷剂通过预定的循环路径循环。 \n\n [0068] 制冷剂通过管 30  第一和第二支撑体 21  和 22  通过连接组件连接 31 。 连接组件 31  具有挠性的构造(可以如下图所示折叠成手风琴),从而即使在第一和第二支撑体 21  和 22  垂直移动,第一和第二支撑体之间的连接状态 21  和 22  和制冷剂通过管 30  可以维持。 连接组件 31  由高导热率的导体(例如铜(无氧铜或铍铜)和铝)形成。 另外,制冷剂通过管 30  是固定的。 \n\n [0069] 虽然连接组件 31  由于上述原因,将其制成挠性,目的是在某种程度上进一步提供热阻。 当提供热阻时,如下所述,可以以更高的精度执行温度控制。 \n\n [0070] 当磁路 11  和 12  通过冷却机构对它们进行冷却,从而将它们的温度设定为不大于室温但不小于液氮或液氦的温度。 所设定的温度根据所使用的制冷剂的种类或构成磁路的永磁体“ m”的种类而变化。 11  和 12 。 \n\n [0071] 在下文中,将描述通过冷却永磁体“ m”提供的效果。 作为永磁体的一般特性,随着永磁体的冷却,剩磁通密度“ Br”变高。 通过使用此特性,可以在空间中产生强磁场 13 。 另外,当永磁体被冷却时,其磁矫顽力增加。 因此,增强了其防辐射特性。 此外,当永磁体被冷却时,在真空室中气体分子从永磁体的表面解吸。 1  降低了。 因此,可以在真空室中实现超高真空 1  无需执行磁路的烘烤过程 11  和 12 。 尽管当执行烘烤过程时它们被加热到预定温度,但是当永磁体被加热时会产生诸如热退磁的问题。 因此,常规上,考虑到烘烤过程中的热去磁,有必要为永磁体选择在室温下具有高磁矫顽力和低剩磁通密度的材料。 然而,根据本发明,由于不必考虑这种热消磁,因此可以选择在室温下具有低磁矫顽力和高剩余磁通密度的材料,从而可以在内部产生强磁场。 空间 13 。 \n\n [0072] 第一和第二磁路 11  和 12  在真空室中处于真空状态 1 。 当磁路 11  和 12  在真空室中处于真空状态 1 ,间隙“ g”可以很小。 另外,由于在抽真空时可以提供热屏蔽效果,因此可以防止设置有波荡器R的房间中的热量传递到磁路。 11  和 12  通过真空室 1 。 \n\n [0073] 第一和第二支持机构 21  和 22  支撑第一和第二磁路 11  和 12 可以通过间隙改变机构(未示出)分别垂直地移动图1,图2所示的箭头(图1中的箭头A和B所示)。 作为间隙改变机构,上述日本未审查专利公开No.2000-206296中公开的机构或SPring-8,T.Hara,T.Tanaka,T.Tanabe,XMMarechal,S。的SPring-8真空内起伏器。 例如,可以使用Okada和H.Kitamura:J。同步辐射5,403(1998)。 间隙“ g” 13  可以通过间隙改变机制来改变。 通过改变间隙“ g”,空间中的磁场强度 13  可以根据需要进行调整。 \n\n [0074] 第一支撑体的上部 21  由第一支撑轴支撑 14 。 第一支撑轴 14  由金属制成,内部为中空。 由于第一支撑轴几乎整个部分 14  放置在真空室外面 1 ,房间(真空室外部)的热量传递到第一支撑轴 14  升高第一磁路的温度 11 。 为了尽可能避免这种温度升高,第一支撑轴 14  为防止温度传递而将其制成空心。 第二支撑体的下部 22  也由第二个支撑轴支撑 15  由于上述原因,其内部是空心的。 因此,当支撑轴 14  和 15  保持强,其热导率降低。 风箱 16  围绕每个支撑轴设置 14  和 15 ,使真空室 1  保持真空状态,支撑轴 14  和 15  可以垂直移动。 \n\n [0075] 由于将波荡器设置在室温下的房间中,因此必须尽可能避免来自红外线等的辐射热。 虽然磁路 11  和 12  由真空室真空绝缘 1 ,磁路 11  和 12  由于辐射热而无法充分冷却。 因此,有必要提供措施以反射热量。 例如,优选的是,磁体支架的表面 21 a  和 22 a  和磁铁安装梁 21 b  和 22 b  支持机构 21  和 22 分别镀有金,以便它们可以反射辐射热。 \n\n [0076] 第一台加热器 21 c  设置在第一磁体安装梁的背面上 21 b  第一支撑体 21 。 同样,第二个加热器 22 c  在第二支撑体内 22 。 此外,温度传感器 21 d  和 22 d  埋在第一和第二磁铁安装梁中 21 b  和 22 b ,分别(图1中未显示)。 图。 图4是示出温度控制单元的构造的控制框图。 23 。 在温度设置单元中设置用于控制永磁体冷却的温度数据 24 。 温度控制单元 23  比较温度传感器测得的温度数据 21 d  和 22 d  带有设定的温度数据并控制加热器 21 c  和 22 c  分别使温度变为所需温度。 \n\n [0077] 作为加热器,例如可以使用护套加热器。 加热器 21 c  和 22 c  安装时应将其压在磁铁安装梁的背面 21 b  和 22 b  分别用铜板和类似物拧紧。 作为温度传感器,可以使用测温电阻或使用铂的热电偶。 \n\n [0078] 虽然温度控制单元 23  并非总是必需的,优选在以下情况下提供。 作为永久磁铁的特性,随着永久磁铁的温度降低,磁特性提高,但是存在永磁体材料,其剩磁通密度在特定的较低温度下显示峰值。 如图1所示的温度。  5.例如,在永磁体是在TSR(旋转取向温度)以下的温度下引起旋转取向的稀土-铁-硼磁体的情况下,需要控制磁路的温度。 11  和 12  因此它们可能不会冷却到TSR或更低。 \n\n 第二实施例 \n\n [0079] 在下文中,将参照图6描述根据第二实施例的波荡器。  6.对与第一实施方式具有相同功能的构成要素标注相同的附图标记,并省略其说明。 \n\n [0080] 根据第二实施方式,一对第一制冷剂通过管 30 A和一对第二制冷剂通过管 30 设有B,各第一制冷剂通过管 30 A连接到第一支撑体 21  通过连接组件 31 A.同样,每个第二制冷剂通过管 30 B连接到第二个支撑体 22  通过连接组件 31 B.每个连接组件 31 和 31 B有弹性。 因此,尽管每个制冷剂通过管 30 和 30 B固定在真空室 1 ,即使第一和第二支撑体 21  和 22  垂直移动,支撑体之间的连接状态 21  和 22  和制冷剂通过管 30 和 30 B可以分别维护。 \n\n 第三实施例 \n\n [0081] 在下文中,将参照图6描述根据第三实施例的波荡器。  7.该实施例与第二实施例的不同之处在于第一和第二制冷剂通过管 30 和 30 B固定在第一和第二支撑体上 21  和 22  通过固定装置 32 和 32 B.定影单元 32 和 32 B由金属板(例如铜板(铍铜和等效铜),不锈钢板或铝板)形成。 当第一个支撑体 21  第二个支撑体 22  垂直移动,第一制冷剂通过管 30 A和第二制冷剂通过管 30 B也分别垂直移动。 因此,不使用具有挠性的连接部件。 另外,在需要定影单元时 32 和 32 B具有耐热性,优选由不锈钢板形成。 \n\n 第四实施例 \n\n [0082] 在下文中,将参照图6描述根据第四实施例的波荡器。  8.该实施例与第三实施例的不同之处在于第一和第二制冷剂通过管 30 和 30 B直接固定在第一和第二支撑体的侧面上 21  和 22 , 分别。 没有提供第三实施例中所示的定影单元。 与第三实施例类似,当第一支撑体 21  第二个支撑体 22  垂直移动,第一制冷剂通过管 30 A和第二制冷剂通过管 30 B也分别垂直移动。 因此,不使用具有挠性的连接部件。 自制冷剂通过管 30 和 30 B直接安装在支撑体上 21  和 22 分别地,可以有效地执行冷却过程。 另外,尽管在第四实施例中没有设置加热器,但是可以通过改变制冷剂的温度来控制温度。 这类似于接下来的第五实施例。 \n\n 第五实施例 \n\n [0083] 在下文中,将参照图5描述根据第五实施例的波荡器。  9.根据本实施例,第一制冷剂通过管 30 A埋在第一磁铁安装梁中 21 b  第一支撑体 21 。 第二制冷剂通过管 30 B类似地埋在第二个磁铁安装梁中 22 b 。 当第一和第二支撑体 21  和 22  垂直移动,第一和第二制冷剂通过管 30 和 30 B分别一起移动。 自制冷剂通过管 30 和 30 B被埋在支撑体内 21  和 22 分别地,可以有效地执行冷却过程。 \n\n 第六实施例 \n\n [0084] 在下文中,将参照图6描述根据第六实施例的波荡器。  10.根据图10之后的实施例。  10,使用冷冻机的冷却机构 33  将进行描述。 如图1所示。  10,一台冷冻机 33  设置在真空室的两侧 1  和一个冷却头 330  插入真空室 1 。 冷却头的上侧 330  连接到第一支撑体 21  通过第一连接组件 31 A.冷却头的下侧 330  连接到第二个支撑体 22  通过第二个连接组件 31 B.冷冻机 33  可以冷却磁路 11  和 12  基于绝热膨胀原理。 与第一实施例类似,连接部件 31 和 31 B有弹性。 因此,即使当第一和第二支撑体 21  和 22  垂直移动,每个支撑体之间的连接状态 21  和 22  和冷却头 330  可以维持。 \n\n 第七实施例 \n\n [0085] 在下文中,将参照图11描述根据第七实施例的波荡器。  11.根据该实施例,一对第一冷冻机 33 一对和第二台冷冻机 33 提供了B。 第一冷却头 330 第一台冷冻机 33 A连接到第一支撑体 21  通过第一个连接组件 31 一个和第二个冷却头 330 第二冷冻机B 33 B连接到第二个支撑体 22  通过第二个连接组件 31 B.连接组件 33 和 33 B有弹性。 因此,即使当第一和第二支撑体 21  和 22  垂直移动,每个支撑体之间的连接状态 21  和 22  和冷却头 330  可以维持。 \n\n 第八实施例 \n\n [0086] 在下文中,将参照图10描述根据第八实施例的波荡器。 如图12所示。  12,第一台冷冻机 33 A设置在真空室上方 1  和一个近似L形的冷却头 330 将A插入真空室 1 。 第一磁体安装梁的相对侧 21 b  第一支撑体 21  连接到冷却头 330 通过连接组件 34 A.第一个加热器 21 c  设置在第一磁体安装梁的中央凹部处 21 b  与其他实施例不同。 第二台冷冻机 33 B设置在真空室下方 1  和一个冷却头 330 B,连接组件 34 B,第二个加热器 22 c  等等以相同的方式布置。 由于连接组件 34 和 34 B即使在第一和第二支撑体时也具有柔韧性 21  和 22  垂直移动,每个支撑体之间的连接状态 21  和 22  和冷却头 330 和 330 B可以维持。 \n\n 第九实施例 \n\n [0087] 在下文中,将参照图9描述根据第九实施例的波荡器。  13.虽然安排了冷冻机 33 和 33 B与第八实施例相同,第九实施例的不同之处在于冷却头的边缘 330 和 330 B直接固定在第一和第二磁铁安装梁上 21 b  和 22 b , 分别。 因此,当第一和第二支撑体 21  和 22  垂直移动,第一台冷冻机 33 一和第二冷冻机 33 B也分别垂直移动。 另外,因为风箱 35  围绕每个冷却头提供 330 和 330 B,真空室 1  保持真空,冷却头 330 和 330 B可以垂直移动。 \n\n [0088] 根据第九实施例,当在冷却头中结合加热器时 330 和 330 B,温度可以控制。 \n\n 永磁体的具体示例 \n\n [0089] 图。 图14示出了构成磁路的优选永磁体的具体示例。 11  和 12  根据本发明的波动器的结构。 参考图。 在图14中,由数字1至5表示的永磁体由Nd-Fe-B形成,并且由于它们提供自旋取向,因此它们的Br(剩余磁通密度)在极低的温度下降低。 由数字6表示的永磁体由Pr-Fe-B形成,并且不提供自旋取向。 霍尔元件用于测量磁场。 附图标记RT表示室温,附图标记LNT表示液氮温度(77K),附图标记LHeT表示液氦温度(4.2K)。 \n\n [0090] 尽管在图2中描述了混合类型。 如图3所示,用于这种类型的软磁体材料可以是permendur,Ho(hol),Dy(dy),纯铁等。 每个实施例中的磁路可以是哈尔巴赫型或混合型。 \n\n 影响 \n\n [0091] 根据本发明的波荡器,提供以下功能和效果。 当通过冷却机构冷却波荡器时,与在室温下使用波荡器的情况相比,剩余磁通密度(Br)变高并且可以在空间中形成强磁场。 当波荡器被冷却时,固有磁矫顽力(iHc)增加,并且抗辐射特性可以相应地增强。 由于磁路,保持器和保持器支撑件通过冷却机构冷却,因此在实现超高真空时不需要烘烤过程。 因此,没有必要考虑在烘烤过程中引起的热消磁,并且可以使用具有高能量积的永磁体。 \n\n [0092] 常规地,当执行从永磁体的表面脱气以在真空室中提供目标真空度时,以防止当永磁体在真空中被加热到大约100℃时永磁体的热消磁。 烘烤过程中,必须选择具有较高iHc的材料。 由于高iHc材料由于互补关系而无条件地具有低Br,因此在磁路中形成的磁通密度低。 \n\n [0093] 同时,根据本发明,由于当永磁体被冷却时气体分子被捕集在磁体表面上,因此可以提供目标真空度而无需在烘烤过程中进行脱气操作。 即,由于磁体未被加热,因此不需要选择高iHc材料来防止热退磁。 因此,可以选择高Br材料,并且由于Br在低温下升高,因此可以提供更高的磁通密度。 \n\n 另一个实施例 \n\n [0094] 以上实施例中公开的构造可以在合理范围内以任意方式组合。');
INSERT INTO `os_patent_instruction_text` VALUES (13044, 22873, 'TECHNICAL FIELD\n\n[0001]The present invention relates to an undulator comprising a first magnetic circuit for forming a periodic magnetic field, a first support body for supporting the first magnetic circuit, a second magnetic circuit arranged opposite to the first magnetic circuit, for forming a periodic magnetic field, a second support body for supporting the second magnetic circuit, a space formed between the oppositely arranged first and second magnetic circuits, for passing an electron beam, and a vacuum chamber for in-vacuuming the first magnetic circuit and the second magnetic circuit.\n\nBACKGROUND ART\n\n[0002]When an electron beam accelerated to about the speed of light in vacuum is bended in a magnetic field, radiation is emitted in a tangential direction of a traveling track of the electron beam and this is called a synchrotron radiation. The study for practical use of various techniques uses characteristics such as high orientation, high intensity, high polarization by setting a light source that generates this synchrotron radiation at a straight section of an electron storage ring. In the electron storage ring of nowadays, many undulators that are high-intensity light sources each having a smaller beam section and higher beam directivity are provided.\n\n[0003]This undulator adopts a construction in which a first magnetic circuit and a second magnetic circuit are oppositely arranged through a space to form a periodic magnetic field through which an electron beam passes as shown in the following Japanese Unexamined Patent Publication No. 2000-206296 or In-vacuum undulators of SPring-8, T. Hara, T. Tanaka, T. Tanabe, X. M. Marechal, S. Okada and H. Kitamura: J. Synchrotron Radiation 5, 403 (1998) and Construction of an in-vacuum type undulator for production of undulator x-rays in the 5-25 keV region. S. Yamamoto, T. Shioya, M. Hara, H. Kitamura, X.W. Zhang, T. Mochizuki, H. Sugiyama and M. Ando; Rev. Sci. Instrum. 63 (1992) 400. In order to generate the periodic magnetic field, each of the first and second magnetic circuits includes many arranged permanent magnets. When a strong magnetic field is to be generated, the first magnetic circuit and the second magnetic circuit are to be brought close to each other, so that an interval (gap) of the space can be narrowed and the magnetic field is intensified. Thus, a construction in which the first magnetic circuit and the second magnetic circuit are contained in a vacuum chamber is adopted. In this construction, there is an advantage such that the gap can be narrowed as compared with a construction in which a vacuum chamber is provided between a first magnetic circuit and a second magnetic circuit.\n\n[0004]However, even when the gap is narrowed as described above, there is a limit in characteristics of the permanent magnet. In addition, when the gap is narrowed too much, there arises a new problem such that the permanent magnet is demagnetized due to radiation generated when the electron beam impinges on the permanent magnet. Therefore, there is a limit of intensifying the magnetic field only by a method of narrowing the gap.\n\n[0005]P.M. Stefan et al., \"Initial results from an in-vacuum modulator in the NSLS X-ray ring\", J. Synchrotion Rad. (1998) 5, 417-419 discloses an in-vaccum modulator with \"in situ\" bake-out capabilities.\n\nDISCLOSURE OF THE INVENTION\n\nPROBLEM TO BE SOLVED BY THE INVENTION\n\n[0006]The present invention is made in view of the above circumstances and it is an object of the present invention to provide an undulator in which a magnetic field formed in a space can be intensified and radiation-proof characteristics are improved in a case where a first magnetic circuit and a second magnetic circuit are oppositely arranged with the space therebetween.\n\nMEANS FOR SOLVING THE PROBLEM\n\n[0007]An undulator according to the present invention to solve the above problems includes: \n\n a first magnetic circuit for forming a periodic magnetic field; a first support body for supporting the first magnetic circuit; a second magnetic circuit arranged so as to be opposite to the first magnetic circuit, for forming a periodic magnetic field; a second support body for supporting the second magnetic circuit; a space formed between the oppositely arranged first and second magnetic circuits, for passing an electron beam; a vacuum chamber for vacuum-sealing the first magnetic circuit and the second magnetic circuit; and a cooling mechanism for cooling a permanent magnet constituting the first magnetic circuit and the second magnetic circuit below the room temperature. According to the present invention, there is further provided a first temperature sensor for detecting a temperature of the first magnetic circuit; a first heater for heating the first magnetic circuit; a second temperature sensor for detecting a temperature of the second magnetic circuit; a second heater for heating the second magnetic circuit; and a temperature control unit for controlling the first heater and the second heater on the basis of temperature measured data provided by the first and second temperature sensors. Furthermore, the first support body has a first magnet holder and a first magnet mounting beam for mounting the first magnetic circuit, the second support body has a second magnet holder and a second magnet mounting beam for mounting the second magnetic circuit, and wherein the first heater is provided on a back surface of the first magnet mounting beam, and the second heater is provided on a back surface of the second magnet mounting beam. \n\n[0008]When the permanent magnet is cooled, there is a permanent magnet which shows characteristics in which the remanent flux density is increased as the temperature is lowered, but when the temperature is lowered to a certain temperature or less, the remanent flux density is reduced. Therefore, when the magnetic circuit includes the permanent magnet, it is necessary to control the cooling temperature. Thus, since the heater for heating the magnetic circuit, the temperature sensor for detecting the temperature of the magnetic circuit, and the temperature control unit for controlling the heater are provided, the cooling temperature can be appropriately controlled. Preferably, a material of the holder has a thermal expansion coefficient greater than or equal to that of the holder support.\n\n[0009]Hereinafter, a description will be made of a function and an effect of the undulator having the above construction. In order to form a periodic magnetic field, the first magnetic circuit and the second magnetic circuit are arranged oppositely with the space therebetween. The first magnetic circuit is supported by the first support body and the second magnetic circuit is supported by the second support body. The first and second magnetic circuits are in-vacuumed in the vacuum chamber. When an electron beam is passed through the space in which the periodic magnetic field is generated, the synchrotron radiation can be generated. Each of the first and second magnetic circuits includes permanent magnets and the cooling mechanism for cooling the permanent magnet below the room temperature. When the permanent magnet is cooled, there appear characteristics in which a remanent flux density (Br) and magnetic coercive force (designated by iHc which is a value of H when an I-H curve (demagnetization curve) crosses an H axis and called intrinsic magnetic coercive force) are increased. When the remanent flux density is increased, magnetic characteristics are improved, so that an intense magnetic field can be formed in the space. In addition, when the magnetic coercive force is increased, it is known that radiation-proof characteristics are improved. As a result, when the first magnetic circuit and the second magnetic circuit are formed oppositely with the space therebetween, there can be provided an undulator in which the magnetic field formed in the space can be intensified and the radiation-proof characteristics can be improved.\n\n[0010]Conventionally, the magnetic circuit is cooled by circulating hot water having a temperature about 120 °C in a baking process so that the permanent magnet may not be heated up to a predetermined temperature or more, and by circulating cooling water having a temperature about the room temperature so that the temperature of the magnetic circuit may not become unstable by the heat from the electron beam when the magnetic circuit is used.\n\n[0011]Preferably, the undulator according to the present invention further includes: \n\n a refrigerant passing tube provided in the cooling mechanism, for passing a refrigerant and a connecting component for connecting the refrigerant passing tube to each of the first support body and the second support body, in which the connecting component has flexibility. \n\n[0012]As the cooling mechanism, the refrigerant passing tube for passing the refrigerant is provided and this is connected to the first support body and the second support body by the connecting component. Therefore, the magnetic circuit supported by the support body can be cooled through the connecting component. Furthermore, since the connecting component has flexibility, even when the gap of the space is changed (even when the first and second support bodies are moved) with the refrigerant passing tube fixed, movement is easy.\n\n[0013]A further development of the cooling mechanism according to the present invention preferably includes: \n\n a first refrigerant passing tube provided to cool the first magnetic circuit, for passing the refrigerant; and a second refrigerant passing tube provided to cool the second magnetic circuit, for passing the refrigerant, in which the first refrigerant passing tube is fixed to the first support body and the second refrigerant passing tube is fixed to the second support body. \n\n[0014]In this case, the first refrigerant passing tube is fixed to the first support body and the second refrigerant passing tube is fixed to the second support body. Thus, the magnetic circuit supported by the support body can be cooled. In addition, according to this construction, when the first and second support bodies are moved, since the refrigerant passing tube fixed to each support body is moved together, a connecting component having flexibility is not necessary.\n\n[0015]A still further development of the cooling mechanism according to the present invention preferably includes: \n\n a first refrigerant passing tube provided to cool the first magnetic circuit, for passing the refrigerant; and a second refrigerant passing tube provided to cool the second magnetic circuit, for passing the refrigerant, in which the first refrigerant passing tube penetrates the inside of the first support body and the second refrigerant passing tube penetrates the inside of the second support body. \n\n[0016]Since the refrigerant passes through inside of the support body, the magnetic circuit can be efficiently cooled.\n\n[0017]Although the example in which the cooling mechanism includes the refrigerant passing tube was described above, the cooling mechanism may include the freezing machine. In this case, the cooling heads of the freezing machines are connected to the first support body and the second support body through the connecting components. In this case, since the connecting component has flexibility, when the gap of the space is changed, the connecting component can easily follow it.\n\n[0018]According to the present invention, a hollow part is preferably formed in each of a first support shaft for supporting the first support body and a second support shaft for supporting the second support body.\n\n[0019]When the cooling mechanism for cooling the magnetic circuit is provided, it is necessary to prevent heat from being transferred from the outside of the undulator. Since the support shafts for supporting the first and second support bodies need to be strong, it is formed of metal. However, metal has high thermal conductivity, and therefore the heat from the outside is likely to be transferred. Thus, the support shaft is made hollow, so that the heat is not likely to be transferred. As a result, the magnetic circuit can be set at a desired cooling temperature.\n\n[0020]A process for assembling the permanent magnet in the holder is performed at the room temperature, and when the undulator is actually operated, the temperature is cooled to a desired temperature. In this case, when the material of the holder support has a thermal expansion coefficient greater than that of the holder, the holder is deformed due to a difference in thermal expansion coefficient when cooled, which causes a damage of the magnetic circuit. Thus, the holder and the holder support are formed of the same material (having the same thermal expansion coefficient) or the holder is formed of the material having a thermal expansion coefficient greater than that of the holder support, so that the holder is not deformed due to a difference in thermal expansion coefficient.\n\nBRIEF DESCRIPTION OF THE DRAWINGS\n\n[0021] Fig. 1is a transverse sectional view showing an undulator according to a first embodiment; Fig. 2is a view showing a construction of a magnetic circuit; Fig. 3is a view showing another construction of the magnetic circuit; Fig. 4is a view showing a control block diagram regarding temperature control; Fig. 5is a graph showing characteristics of a magnet; Fig. 6is a transverse sectional view showing an undulator according to a second embodiment; Fig. 7is a transverse sectional view showing an undulator according to a third embodiment; Fig. 8is a transverse sectional view showing an undulator according to a fourth embodiment; Fig. 9is a transverse sectional view showing an undulator according to a fifth embodiment; Fig. 10is a transverse sectional view showing an undulator according to an example, not forming part of the invention; Fig. 11is a transverse sectional view showing an undulator according to an example, not forming part of the invention; Fig. 12is a transverse sectional view showing an undulator according to an example, not forming part of the invention; Fig. 13is a transverse sectional view showing an undulator according to an example, not forming part of the invention; and Fig. 14is a table showing a concrete example of permanent magnets. \n\nBEST MODE FOR CARRYING OUT THE INVENTION\n\n[0022]Preferred embodiments of an undulator according to the present invention will be described with reference to the drawings. Fig. 1 is a transverse sectional view showing an undulator according to a first embodiment. Fig. 2 is a conceptual view showing a construction of a magnetic circuit. Fig. 3 is a conceptual view showing another construction of the magnetic circuit.\n\n[0023]First, a description will be made of the magnetic circuit. Fig. 2 shows a so-called Halbach type of magnetic circuit, in which a first magnetic circuit 11 and a second magnetic circuit 12 are disposed with a space 13 therebetween. The first magnetic circuit 11 includes many groups of four permanent magnets 11a to 11d which are arranged in a traveling direction of an electron beam. A magnetization direction of each of the permanent magnets 11a to 11d is shown by an arrow. The second magnetic circuit 12 also comprises many groups of four permanent magnets 12a to 12d which are arranged in the traveling direction of the electron beam. Thus, \"λ\" designates a period of a magnetic field as shown in the drawing. An arrangement pitch of this magnet can be changed appropriately according to its purpose.\n\n[0024]A gap of the space 13 is designated by \"g\". This gap \"g\" can be changed by a gap changing mechanism. By changing the gap, intensity of the magnetic field can be adjusted. When the permanent magnets are arranged as shown in Fig. 2, a periodic magnetic field can be formed in the space 13. When the electron beam is passed through the space 13, the electron beam is affected by the periodic magnetic field and goes through like snake. A weaving surface M of the electron beam is parallel to magnet surfaces of the opposed first and second magnetic circuits. When the electron beam weavs through it, a desired synchrotron radiation can be generated.\n\n[0025]Although the magnetic circuit shown in Fig. 2 is constituted by the permanent magnets only, a soft magnet is disposed between permanent magnets in a so-called hybrid type of magnetic circuit as shown in Fig. 3. That is, a first magnetic circuit includes permanent magnets 11A and 11C and soft magnetic material 11B and11D which are alternatively arranged, and a second magnetic circuit includes permanent magnets 12A and 12C and soft magnetic material 12B and 12D which are alternately arranged. Each magnetization direction (direction of a magnetic flux) is shown by an arrow. According to the undulator of the present invention, any magnetic circuit may be used and it is not limited to a magnetic circuit having a specific construction.\n\nFirst Embodiment\n\n[0026]Next, a description will be made of a construction of the undulator according to a first embodiment. Fig. 1 is the transverse sectional view showing the undulator cut along a surface perpendicular to the traveling direction of the electron beam. The first magnetic circuit 11 and the second magnetic circuit 12 are oppositely arranged with the space 13 therebetween. As described above with reference to Fig 2, according to the first magnetic circuit 11, many permanent magnets \"m\" are arranged along the traveling direction of the electron beam (direction perpendicular to a sheet surface of Fig. 1). Similarly, many permanent magnets \"m\" are arranged in the second magnetic circuit 12. A concrete example of a preferred permanent magnet \"m\" will be described below.\n\n[0027]A first support body 21 is provided to mount and support the first magnetic circuit 11. The first support body 21 includes a first magnet holder 21a (corresponding to a holder) and a first magnet mounting beam 21b (corresponding to a holder support). Conventionally, since the temperature is heated up to a high temperature in a baking process, the first magnet holder 21 a is formed of oxygen free copper and the first magnet mounting beam 21 b is formed of aluminum. However, according to the present invention, both are formed of oxygen free copper. As will be described below, when the magnetic circuits 11 and 12 are cooled, although both magnet holder 21a and the magnet mounting beam 21b shrink, since they are formed of the same material, the magnet holder 21 a is not deformed by the shrinkage in size. Therefore, even when the magnetic circuits 11 and 12 are cooled, the permanent magnet \"m\" is not deformed and not damaged.\n\n[0028]In addition, the first magnet holder 21 a may be formed of aluminum and the first magnet mounting beam 21b may be formed of oxygen free copper. In this case also, since a thermal expansion coefficient of aluminum is higher than that of oxygen free copper, even when the magnetic circuits 11 and 12 are cooled, they are not deformed in a damaging direction.\n\n[0029]A second support body 22 for mounting and supporting the second magnetic circuit 12, and a second magnet holder 22a and a second magnet mounting beam 22b are similar to those of the first magnetic circuit 11.\n\n[0030]Hereinafter, a description will be made of a construction of a cooling mechanism to cool the magnetic circuits 11 and 12. There is provided a refrigerant passing tube 30 through which a refrigerant is passed, that is, a pair of refrigerant passing tubes 30 are provided on both lateral sides of the space 13. Although the refrigerant is not limited to a specific one, it is preferable that the refrigerant is a liquefied refrigerant such as liquid nitrogen or liquid helium. The refrigerant passing tube 30 is also arranged in the traveling direction of the electron beam. The refrigerant is circulated through a predetermined circulation path.\n\n[0031]The refrigerant passing tube 30 and each of the first and second support bodies 21 and 22 are connected through connecting components 31. The connecting component 31 has a configuration having flexibility (which can be accordion-folded as shown in the drawing below), so that even when the first and second support bodies 21 and 22 are vertically moved, the connection state between each of the first and second support bodies 21 and 22 and the refrigerant passing tube 30 can be maintained. The connecting component 31 is formed of a conductor having high thermal conductivity (copper (oxygen free copper or beryllium copper) and aluminum, for example). In addition, the refrigerant passing tube 30 is fixed.\n\n[0032]Although the connecting component 31 is made flexible for the above reason, it is made flexible with the purpose of further providing thermal resistance to some extent. When the thermal resistance is provided, temperature control can be performed with higher precision as will be described below.\n\n[0033]When the magnetic circuits 11 and 12 are cooled by the cooling mechanism so that their temperatures are set so as to be not more than the room temperature but not less than that of the liquid nitrogen or liquid helium. The temperature to be set varies according to a kind of refrigerant to be used or a kind of permanent magnet \"m\" which constitutes the magnetic circuits 11 and 12.\n\n[0034]Hereinafter, a description will be made of an effect provided by cooling the permanent magnet \"m\". As general characteristics of the permanent magnet, a remanent flux density \"Br\" becomes high as the permanent magnet is cooled. By using this characteristics, a strong magnetic field can be generated in the space 13. In addition, when the permanent magnet is cooled, its magnetic coercive force is increased. Thus, its radiation-proof characteristics are enhanced. Furthermore, when the permanent magnet is cooled, desorption of a gas molecule from a surface of the permanent magnet in a vacuum chamber 1 is reduced. Therefore, ultrahigh vacuum can be implemented in the vacuum chamber 1 without performing the baking process for the magnetic circuits 11 and 12. Although they are heated up to a predetermined temperature when the baking process is performed, a problem such as heat demagnetization is generated when the permanent magnet is heated. Therefore, conventionally, it is necessary to select a material having high magnetic coercive force and a low remanent flux density at the room temperature for the permanent magnet in view of the heat demagnetization in the baking process. However, according to the present invention, since it is not necessary to consider such heat demagnetization, a material having low magnetic coercive force and a high remanent flux density at the room temperature can be selected, so that a strong magnetic field can be generated in the space 13.\n\n[0035]The first and second magnetic circuits 11 and 12 are in-vacuumed in the vacuum chamber 1. When the magnetic circuits 11 and 12 are in-vacuumed in the vacuum chamber 1, the gap \"g\" can be small. In addition, since a heat shielding effect can be provided when they are in-vacuumed, the heat in a room where the undulator R is set can be prevented from being transferred to the magnetic circuits 11 and 12 through the vacuum chamber 1.\n\n[0036]The first and second support bodies 21 and 22 supporting the first and second magnetic circuits 11 and 12, respectively can be moved vertically (shown by arrows A and B in Fig. 1) by the gap changing mechanism (not shown). As the gap changing mechanism, the mechanism disclosed in the above-described Japanese Unexamined Patent Publication No. 2000-206296 or In-vacuum undulators of SPring-8, T. Hara, T. Tanaka, T. Tanabe, X. M. Marechal, S. Okada and H. Kitamura: J. Synchrotron Radiation 5, 403 (1998) can be used, for example. The gap \"g\" of the space 13 can be changed by the gap changing mechanism. By changing the gap \"g\", the intensity of the magnetic field in the space 13 can be adjusted as desired.\n\n[0037]An upper part of the first support body 21 is supported by a first support shaft 14. The first support shaft 14 is formed of metal and its inside is hollow. Since almost an entire part of the first support shaft 14 is disposed outside the vacuum chamber 1, the heat of the room (outside the vacuum chamber) is transferred to the first support shaft 14 to raise a temperature of the first magnetic circuit 11. In order to prevent such temperature raise as much as possible, the first support shaft 14 is made hollow to prevent the temperature from being transferred. A lower part of the second support body 22 is also supported by a second support shaft 15 and its inside is hollow for the same reason as the above. Thus, while the support shafts 14 and 15 are kept strong, thermal conductivity thereof is lowered. A bellow 16 is provided around each of the support shafts 14 and 15, so that while the vacuum chamber 1 is held with vacuum, the support shafts 14 and 15 can be vertically moved.\n\n[0038]Since the undulator is set in the room at the room temperature, it is necessary to avoid the radiation heat from infrared rays and the like as much as possible. Although the magnetic circuits 11 and 12 are vacuum-insulated by the vacuum chamber 1, the magnetic circuits 11 and 12 could not be sufficiently cooled due to the radiation heat. Thus, it is necessary to provide measures to reflect the heat. For example, it is preferable that surfaces of the magnet holders 21a and 22a and the magnet mounting beams 21b and 22b of the support bodies 21 and 22, are respectively plated with gold so that they can reflect the radiation heat.\n\n[0039]A first heater 21 c is provided on a back surface of the first magnet mounting beam 21b of the first support body 21. Similarly, a second heater 22c is provided in the second support body 22. In addition, temperature sensors 21d and 22d are buried in the first and second magnet mounting beams 21b and 22b, respectively (not shown in Fig. 1). Fig. 4 is a control block diagram showing a construction of a temperature control unit 23. Temperature data to control cooling of the permanent magnet is set in a temperature setting unit 24. The temperature control unit 23 compares temperature data measured by the temperature sensors 21 d and 22d with the set temperature data and controls the heaters 21 c and 22c separately so that the temperature may become a desired temperature.\n\n[0040]As the heater, a sheath heater can be used, for example. The heaters 21 c and 22c are mounted such that they are pressed onto the back sides of the magnet mounting beams 21b and 22b by a copper plate and the like and screwed, respectively. As the temperature sensor, a temperature measuring resistor or a thermocouple using platinum may be used.\n\n[0041]Although the temperature control unit 23 is not always necessary, it is preferably provided in the following case. There is no problem in a case where as the characteristics of the permanent magnet, the magnetic characteristics is enhanced as the temperature of the permanent magnet is lowered, but there is a permanent magnet material which remanent flux density shows a peak value at a specific low temperature as shown in Fig. 5. For example, in a case where the permanent magnet is a rare earth-iron-boron magnet which causes spin reorientation at a temperature of TSR (spin reorientation temperature) or less, it is necessary to control the temperatures of the magnetic circuits 11 and 12 so that they may not be cooled to the TSR or less.\n\nSecond Embodiment\n\n[0042]Hereinafter, a description will be made of an undulator according to a second embodiment with reference to Fig. 6. The same reference numbers are allotted to the components having the same functions as those in the first embodiment and their descriptions will not be repeated.\n\n[0043]According to the second embodiment, a pair of first refrigerant passing tubes 30A and a pair of second refrigerant passing tubes 30B are provided and each first refrigerant passing tube 30A is connected to a first support body 21 through a connecting component 31A. Similarly, each second refrigerant passing tube 30B is connected to a second support body 22 through a connecting component 31B. Each of the connecting components 31 A and 31 B has flexibility. Thus, although each of the refrigerant passing tubes 30A and 30B is fixed to a vacuum chamber 1, even when the first and second support bodies 21 and 22 are vertically moved, connecting states between the support bodies 21 and 22 and the refrigerant passing tubes 30A and 30B can be maintained, respectively.\n\nThird Embodiment\n\n[0044]Hereinafter, a description will be made of an undulator according to a third embodiment with reference to Fig. 7. This embodiment is different from the second embodiment in that first and second refrigerant passing tubes 30A and 30B are fixed to first and second support bodies 21 and 22 through fixing units 32A and 32B. The fixing units 32A and 32B are formed of metal plate (such as a copper plate (beryllium copper and equivalent), a stainless plate or an aluminum plate). When the first support body 21 and the second support body 22 are vertically moved, the first refrigerant passing tube 30A and the second refrigerant passing tube 30B are also vertically moved, respectively. Therefore, a connecting component having flexibility is not used. In addition, when it is necessary for the fixing units 32A and 32B to have thermal resistance, it is preferable that those are formed of the stainless plate.\n\nFourth Embodiment\n\n[0045]Hereinafter, a description will be made of an undulator according to a fourth embodiment with reference to Fig. 8. This embodiment is different from the third embodiment in that first and second refrigerant passing tubes 30A and 30B are directly fixed to side surfaces of first and second support bodies 21 and 22, respectively. The fixing unit shown in the third embodiment is not provided. Similar to the third embodiment, when the first support body 21 and the second support body 22 are vertically moved, the first refrigerant passing tube 30A and the second refrigerant passing tube 30B are also vertically moved, respectively. Therefore, a connecting component having flexibility is not used. Since the refrigerant passing tubes 30A and 30B are directly mounted on the support bodies 21 and 22, respectively, a cooling process can be efficiently performed. In addition, although a heater is not provided in the fourth embodiment, a temperature can be controlled by varying the temperature of a refrigerant. This is similar to the next fifth embodiment.\n\nFifth Embodiment\n\n[0046]Hereinafter, a description will be made of an undulator according to a fifth embodiment with reference to Fig. 9. According to this embodiment, a first refrigerant passing tube 30A is buried in a first magnet mounting beam 21b of a first support body 21. A second refrigerant passing tube 30B is similarly buried in a second magnet mounting beam 22b. When the first and second support bodies 21 and 22 are vertically moved, the first and second refrigerant passing tubes 30A and 30B are moved together, respectively. Since the refrigerant passing tubes 30A and 30B are buried in the support bodies 21 and 22, respectively, a cooling process can be efficiently performed.\n\nExample\n\n[0047]Hereinafter, a description will be made of an undulator according to an example, not forming part of the invention with reference to Fig. 10. According to examples after Fig. 10, a cooling mechanism using a freezing machine 33 will be described. As shown in Fig. 10, a pair of freezing machines 33 is disposed on both lateral sides of a vacuum chamber 1 and a cooling head 330 is inserted into the vacuum chamber 1. An upper side of the cooling head 330 is connected to a first support body 21 by a first connecting component 31A. A lower side of the cooling head 330 is connected to a second support body 22 by a second connecting component 31B. The freezing machine 33 can cool magnetic circuits 11 and 12 based on a principle of adiabatic expansion. Similar to the first embodiment, the connecting components 31 A and 31 B have flexibility. Thus, even when the first and second support bodies 21 and 22 are vertically moved, the connecting states between each of the support bodies 21 and 22 and the cooling head 330 can be maintained.\n\nExample\n\n[0048]Hereinafter, a description will be made of an undulator according to an example, not forming part of the invention with reference to Fig. 11. According to this example, a pair of first freezing machines 33A and a pair of second freezing machines 33B are provided. A first cooling head 330A of the first freezing machine 33A is connected to a first support bod', '技术领域 \n\n [0001] 波动器技术领域本发明涉及一种波动器,包括:第一磁场,用于形成周期性磁场;第一支撑体,用于支撑第一磁场;与第二磁场相对设置的第二磁场,用于形成周期性磁场;以及 第二支撑体,用于支撑第二磁路;在相对布置的第一和第二磁路之间形成的空间,用于通过电子束;以及真空室,用于向第一磁路和第二磁路注入真空。 \n\n  背景技术 \n\n [0002] 当在真空中加速到接近光速的电子束在磁场中弯曲时,辐射沿电子束的行进轨迹的切线方向发射,这称为同步辐射。 通过将光源设置在电子存储环的笔直部分来产生这种同步加速器辐射,各种技术在实际使用中的研究利用了诸如高取向,高强度,高极化等特性。 在当今的电子存储环中,提供了许多起伏器,这些起伏器是各自具有较小的束截面和较高的束指向性的高强度光源。 \n\n [0003] 该波荡器采用如下结构,其中第一磁路和第二磁路在空间中相对地布置以形成周期性磁场,电子束通过该周期性磁场,如以下日本未审查专利公开No.2000-206296或In  SPring-8的真空负压起伏器,T。Hara,T。Tanaka,T。Tanabe,XM Marechal,S。Okada和H.Kitamura:同步辐射第5卷,第403页(1998年)和真空吸波起伏器的构造 用于在5-25 keV范围内产生波状X射线。  S.山本(S. Yamamoto),T。盐谷(T.Shioya),M。原(H.  Zhang T. Mochizuki,H。Sugiyama和M.Ando; 牧师 仪器 参见图63(1992)400。为了产生周期磁场,第一和第二磁路中的每一个都包括许多布置的永磁体。 当要产生强磁场时,使第一磁路和第二磁路彼此靠近,从而可以缩小空间的间隔(间隙)并且增强磁场。 因此,采用了其中第一磁路和第二磁路包含在真空室中的构造。 在该结构中,与在第一磁路和第二磁路之间设有真空室的结构相比,具有能够缩小间隙的优点。 \n\n [0004] 但是,即使如上所述那样使间隙变窄,永磁体的特性也受到限制。 另外,当间隙过窄时,出现新的问题,即由于电子束撞击到永磁体上时产生的辐射,永磁体被消磁。 因此,仅通过缩小间隙的方法来增强磁场是有限的。 \n\n [0005] 下午。  Stefan等人,“ NSLS X射线环中真空调制器的初始结果”,J。Synchrotion Rad。 在1998年第5期,第417-419号专利中公开了一种具有“原位”烘烤能力的真空内调制器。 \n\n  发明内容 \n\n  本发明要解决的问题 \n\n [0006] 鉴于上述情况而做出本发明,并且本发明的目的是提供一种起伏器,其中在第一磁场的情况下,可以增强在空间中形成的磁场并且改善防辐射特性。 电路和第二磁路相对地布置,在它们之间具有空间。 \n\n  解决问题的手段 \n\n [0007] 根据本发明的用于解决上述问题的波荡器包括: \n\n 第一磁路,用于形成周期磁场; 第一支撑体,用于支撑第一磁路; 第二磁路布置成与第一磁路相反,用于形成周期性磁场。 第二支撑体,用于支撑第二磁路; 在相对布置的第一和第二磁路之间形成的空间,用于使电子束通过。 真空室,用于真空密封第一磁路和第二磁路。 冷却机构用于将构成第一磁路和第二磁路的永磁体冷却至室温以下。 根据本发明,还提供了第一温度传感器,用于检测第一磁路的温度。 第一加热器,用于加热第一磁路; 第二温度传感器,用于检测第二磁路的温度; 第二加热器,用于加热第二磁路; 温度控制单元,用于基于由第一温度传感器和第二温度传感器提供的温度测量数据来控制第一加热器和第二加热器。 此外,第一支撑体具有第一磁体支架和用于安装第一磁路的第一磁体安装梁,第二支撑体具有第二磁体支架和用于安装第二磁路的第二磁体安装梁。 加热器设置在第一磁体安装梁的后表面上,第二加热器设置在第二磁体安装梁的后表面上。 \n\n [0008] 当永磁体被冷却时,永磁体表现出以下特性:随着温度降低,剩磁通密度增加,但是当温度降低到特定温度以下时,剩磁通密度降低。 因此,当磁路包括永磁体时,必须控制冷却温度。 因此,由于提供了用于加热磁路的加热器,用于检测磁路的温度的温度传感器以及用于控制加热器的温度控制单元,因此可以适当地控制冷却温度。 优选地,支架的材料的热膨胀系数大于或等于支架的热膨胀系数。 \n\n [0009] 在下文中,将描述具有以上构造的波荡器的功能和效果。 为了形成周期磁场,第一磁路和第二磁路相对地布置,在它们之间具有空间。 第一磁路由第一支撑体支撑,第二磁路由第二支撑体支撑。 第一和第二磁路在真空室中是真空的。 当电子束穿过其中产生周期磁场的空间时,可以产生同步辐射。 第一和第二磁路中的每一个都包括永磁体和用于将永磁体冷却到室温以下的冷却机构。 当永磁体冷却时,会出现如下特性:剩余磁通密度(Br)和磁矫顽力(由iHc表示,当IH曲线(退磁曲线)与H轴交叉时为H的值)称为固有磁矫顽 力)增加。 当剩余磁通密度增加时,磁特性得到改善,从而可以在空间中形成强磁场。 另外,已知在提高矫顽磁力的情况下,耐放射线特性提高。 结果,当第一磁路和第二磁路在它们之间的空间相对地形成时,可以提供一种波荡器,其中可以增强在空间中形成的磁场并且可以改善防辐射特性。 \n\n [0010] 常规地,通过在烘烤过程中使温度约为120℃的热水循环以使永磁体不被加热到预定温度或更高,并通过使温度约为室温的循环冷却水来冷却磁路。 温度,以便在使用磁路时,磁路的温度不会因电子束的热量而变得不稳定。 \n\n [0011] 优选地,根据本发明的波动器还包括: \n\n  设置在冷却机构中的用于使制冷剂通过的制冷剂通过管和用于将制冷剂通过管连接至第一支撑体和第二支撑体中的每一个的连接部件,其中该连接部件具有挠性。 \n\n [0012] 作为冷却机构,设置有使制冷剂通过的制冷剂通过管,该制冷剂通过管通过连接部件与第一支撑体和第二支撑体连接。 因此,可以通过连接部件冷却由支撑体支撑的磁路。 此外,由于连接部件具有挠性,因此即使在制冷剂通过管固定的状态下即使改变间隙(即使使第一支承体和第二支承体移动),移动也容易。 \n\n [0013] 根据本发明的冷却机构的进一步发展优选地包括: \n\n  第一制冷剂通过管,其设置成冷却第一磁路,以使制冷剂通过。 第二制冷剂通过管被设置为冷却第二磁路,以使制冷剂通过,其中第一制冷剂通过管被固定到第一支撑体,第二制冷剂通过管被固定到第二支撑体。 \n\n [0014] 在这种情况下,第一制冷剂通过管固定在第一支撑体上,第二制冷剂通过管固定在第二支撑体上。 因此,可以冷却由支撑体支撑的磁路。 另外,根据该结构,在使第一支撑体和第二支撑体移动时,由于固定于各支撑体的制冷剂通过管一起移动,因此不需要具有挠性的连接部件。 \n\n [0015] 根据本发明的冷却机构的进一步发展优选地包括: \n\n  第一制冷剂通过管,其设置成冷却第一磁路,以使制冷剂通过。 第二制冷剂通过管,其用于冷却第二磁路,以使制冷剂通过,其中第一制冷剂通过管穿透第一支撑体的内部,第二制冷剂通过管穿透第二支撑体的内部。 \n\n [0016] 由于制冷剂通过支撑体的内部,因此可以有效地冷却磁路。 \n\n [0017] 尽管上面描述了冷却机构包括制冷剂通过管的示例,但是冷却机构可以包括冷冻机。 在这种情况下,冷冻机的冷却头通过连接部件连接到第一支撑体和第二支撑体。 在这种情况下,由于连接部件具有挠性,因此当改变空间的间隙时,连接部件可以容易地跟随它。 \n\n [0018] 根据本发明,优选在分别用于支撑第一支撑体的第一支撑轴和用于支撑第二支撑体的第二支撑轴的每一个中形成中空部分。 \n\n [0019] 当提供用于冷却磁路的冷却机构时,必须防止热量从波荡器的外部传递。 由于用于支撑第一支撑体和第二支撑体的支撑轴必须坚固,因此其由金属形成。 然而,金属具有高的热导率,因此来自外界的热量可能被传递。 因此,支撑轴被制成中空的,从而热量不可能被传递。 结果,可以将磁路设置在期望的冷却温度。 \n\n [0020] 在室温下执行将永磁体组装在支架中的过程,并且当实际操作波荡器时,将温度冷却至所需温度。 在这种情况下,当保持器支撑件的材料的热膨胀系数大于保持器的热膨胀系数时,由于冷却时保持器由于热膨胀系数的差异而变形,这导致磁路损坏。 因此,保持器和保持器支撑件由相同的材料(具有相同的热膨胀系数)形成,或者保持器由热膨胀系数大于保持器支撑件的热膨胀系数的材料形成,从而保持器不变形。 由于热膨胀系数不同。 \n\n  附图的简要说明 \n\n [0021]  图1是示出根据第一实施例的波荡器的横截面图。 图2是表示磁路的结构的图。 图3是表示磁路的另一结构的图。 图4是表示温度控制的控制框图的图。 图5是表示磁铁的特性的图。 图6是表示第二实施方式的波荡器的横截面图。 图7是表示第三实施方式的波荡器的横截面图。 图8是表示第四实施方式的波荡器的横截面图。 图9是表示第五实施方式的波荡器的横截面图。 图10是表示不构成本发明的一部分的实施例的波荡器的横截面图。 图11是表示不构成本发明的一部分的实施例的波荡器的横截面图。 图12是表示不构成本发明的一部分的一实施例的波荡器的横截面图。 图13是表示不构成本发明的一部分的实施例的波荡器的横截面图。 图14是表示永久磁铁的具体例的表。 \n\n  实施本发明的最佳模式 \n\n [0022] 将参考附图描述根据本发明的波荡器的优选实施例。  图。1  图4是示出根据第一实施例的波荡器的横截面图。  图2  图2是示出磁路的结构的概念图。  图3  图3是示出磁路的另一结构的概念图。 \n\n [0023] 首先,将描述磁路。  图2  图1示出了所谓的哈尔巴赫(Halbach)型磁路,其中,第一磁路11和第二磁路12设置为在它们之间具有空间13。 第一磁路11包括在电子束的行进方向上排列的多组四个永久磁铁11a至11d。 永磁体11a至11d中的每一个的磁化方向由箭头表示。 第二磁路12还包括沿电子束的行进方向排列的多组四个永久磁铁12a至12d。 因此,“λ”表示如图所示的磁场的周期。 该磁铁的配置节距可以根据其目的适当地改变。 \n\n [0024] 间隔13的间隙由“ g”表示。 该间隙“ g”可以通过间隙改变机构来改变。 通过改变间隙,可以调节磁场强度。 如图所示布置永磁体时  图2 因此,可以在空间13中形成周期性磁场。当电子束穿过空间13时,电子束受到周期性磁场的影响并且像蛇一样穿过。 电子束的编织表面M平行于相对的第一和第二磁路的磁体表面。 当电子束通过它时,可以产生所需的同步辐射。 \n\n [0025] 虽然磁路如图  图2  仅由永磁体构成,在如图所示的混合型磁路中,在永磁体之间设置软磁体。  图3 。 即,第一磁路包括交替布置的永磁体11A和11C以及软磁性材料11B和11D,第二磁路包括交替布置的永磁体12A和12C以及软磁性材料12B和12D。 每个磁化方向(磁通量的方向)用箭头表示。 根据本发明的波荡器,可以使用任何磁路,并且不限于具有特定结构的磁路。 \n\n  第一实施例 \n\n [0026] 接下来,将描述根据第一实施例的波荡器的构造。  图。1  图6是示出了在垂直于电子束的行进方向的表面上切开的波荡器的横截面图。 第一磁路11和第二磁路12相对地布置,在它们之间具有空间13。 如上文参考  图2 ,根据第一磁路11,沿电子束的行进方向(垂直于金属薄片的表面的方向)布置许多永磁体“ m”。  图。1 )。 类似地,在第二磁路12中布置许多永磁体“ m”。下面将描述优选的永磁体“ m”的具体示例。 \n\n [0027] 提供第一支撑体21以安装和支撑第一磁路11。第一支撑体21包括第一磁体保持器21a(对应于保持器)和第一磁体安装梁21b(对应于保持器支撑)。 传统上,由于在烘烤过程中将温度加热到高温,因此第一磁体保持器21a由无氧铜形成,并且第一磁体安装梁21b由铝形成。 然而,根据本发明,两者均由无氧铜形成。 如下所述,当冷却磁路11和12时,尽管磁体支架21a和磁体安装梁21b都收缩,但是由于它们由相同的材料形成,因此磁体支架21a不会因收缩而变形。 尺寸。 因此,即使当磁路11和12被冷却时,永磁体“ m”也不会变形和损坏。 \n\n [0028] 另外,第一磁体支架21a可以由铝形成,并且第一磁体安装梁21b可以由无氧铜形成。 同样在这种情况下,由于铝的热膨胀系数高于无氧铜的热膨胀系数,因此即使在冷却磁路11和12时,它们也不会在破坏方向上变形。 \n\n [0029] 用于安装和支撑第二磁路12的第二支撑体22,第二磁体支架22a和第二磁体安装梁22b与第一磁路11的相似。 \n\n [0030] 在下文中,将描述用于冷却磁路11和12的冷却机构的构造。提供了使制冷剂通过的制冷剂通过管30,即,提供了一对制冷剂通过管30。 在空间13的两个侧面上,尽管制冷剂不限于特定的制冷剂,但是优选地,制冷剂是诸如液氮或液氦的液化制冷剂。 制冷剂通过管30也布置在电子束的行进方向上。 制冷剂通过预定的循环路径循环。 \n\n [0031] 制冷剂通过管30与第一支撑体21和第二支撑体22中的每一个通过连接部件31连接。连接部件31具有具有挠性的结构(如下图所示可以折叠成手风琴)。 即使当第一支撑体21和第二支撑体22竖直移动时,也能够维持第一支撑体21和第二支撑体22中的每一个与制冷剂通过管30之间的连接状态。 连接部件31由具有高导热率的导体(例如铜(无氧铜或铍铜)和铝)形成。 另外,制冷剂通过管30被固定。 \n\n [0032] 尽管由于上述原因使连接部件31挠性,但是为了进一步在某种程度上提供耐热性,也使连接部件31挠性。 当提供热阻时,如下所述,可以以更高的精度执行温度控制。 \n\n [0033] 当通过冷却机构冷却磁路11和12时,将其温度设定为不大于室温但不小于液氮或液氦的温度。 设定的温度根据所使用的制冷剂的种类或构成磁路11、12的永久磁铁“ m”的种类而变化。 \n\n [0034] 在下文中,将描述通过冷却永磁体“ m”而提供的效果。 作为永磁体的一般特性,随着永磁体的冷却,剩磁通密度“ Br”变高。 通过利用该特性,可以在空间13中产生强磁场。另外,当永磁体被冷却时,其磁矫顽力增加。 因此,增强了其防辐射特性。 此外,当永磁体被冷却时,减少了气体分子从真空室1中的永磁体的表面解吸。 因此,可以在真空室1中实现超高真空而无需对磁路11和12进行烘焙处理。尽管在进行烘焙处理时将它们加热到预定温度,但是当磁路11和12被加热到预定温度时,会产生诸如退磁的问题。 永磁体被加热。 因此,常规上,考虑到烘烤过程中的热去磁,有必要为永磁体选择在室温下具有高磁矫顽力和低剩磁通密度的材料。 然而,根据本发明,由于不必考虑这种热退磁,因此可以选择在室温下具有低磁矫顽力和高剩余磁通密度的材料,从而可以在内部产生强磁场。 空间13。 \n\n [0035] 第一和第二磁路11和12在真空室1中是真空的。当磁路11和12在真空室1中是真空的时,间隙“ g”可以很小。 另外,由于当它们处于真空中时可以提供热屏蔽效果,所以可以防止设置有波荡器R的房间中的热量通过真空室1传递到磁路11和12。 \n\n [0036] 分别支撑第一磁路11和第二磁路12的第一支撑体21和第二支撑体22可以竖直地移动(由箭头A和B示出  图。1 )通过间隙改变机构(未显示)。 作为间隙改变机构,上述日本未审查专利公开No.2000-206296中公开的机构或SPring-8,T.Hara,T.Tanaka,T.Tanabe,XMMarechal,S。的SPring-8真空内起伏器。 例如,可以使用Okada和H.Kitamura:J。同步辐射5,403(1998)。 间隙13的间隙“ g”可以通过间隙改变机构来改变。 通过改变间隙“ g”,可以根据需要调节空间13中的磁场强度。 \n\n [0037] 第一支撑体21的上部由第一支撑轴14支撑。第一支撑轴14由金属形成并且其内部是中空的。 由于第一支撑轴14的几乎整个部分设置在真空腔室1的外部,所以房间(真空腔室外部)的热量被传递到第一支撑轴14,从而提高了第一磁路11的温度。 为了尽可能地防止这种温度升高,第一支撑轴14被制成中空的以防止温度传递。 第二支撑体22的下部也由第二支撑轴15支撑,并且由于与上述相同的原因,其内部是中空的。 因此,在保持支撑轴14和15牢固的同时,其热导率降低。 在支撑轴14和15的每一个周围设置有波纹管16,使得在真空室1保持真空的同时,支撑轴14和15可以竖直地移动。 \n\n [0038] 由于将波荡器设置在室温下的房间中,因此有必要尽可能避免来自红外线等的辐射热。 尽管磁路11和12被真空室1真空绝缘,但是由于辐射热,磁路11和12不能被充分冷却。 因此,有必要提供措施以反射热量。 例如,优选的是,磁体保持器21a和22a的表面以及支撑体21和22的磁体安装梁21b和22b的表面分别镀有金,以便它们能够反射辐射热。 \n\n [0039] 在第一支撑体21的第一磁体安装梁21b的背面设置有第一加热器21c。同样,在第二支撑体22中设置有第二加热器22c。另外,埋设有温度传感器21d,22d。 在第一和第二磁体安装梁21b和22b中分别  图。1 )。  图4  图4是示出温度控制单元23的结构的控制框图。在温度设定单元24中设定用于控制永磁体的冷却的温度数据。温度控制单元23比较由温度传感器21d和22d测量的温度数据。 利用设定的温度数据并分别控制加热器21c和22c,使得温度可以变为期望的温度。 \n\n [0040] 作为加热器,例如可以使用护套加热器。 加热器21c和22c被安装成使得它们通过铜板等被压在磁体安装梁21b和22b的背面上并且被拧紧。 作为温度传感器,可以使用测温电阻或使用铂的热电偶。 \n\n [0041] 尽管并非总是需要温度控制单元23,但是优选地在以下情况下提供它。 作为永久磁铁的特性,随着永久磁铁的温度降低而磁特性提高,但是存在永磁体材料,其剩磁通密度在特定的较低温度下显示峰值。 温度如图所示  图5 。 例如,在永磁体是在TSR(旋转取向温度)以下的温度下引起旋转取向的稀土-铁-硼磁体的情况下,需要控制磁路11、12的温度。 因此它们可能不会冷却到TSR或更低。 \n\n  第二实施例 \n\n [0042] 在下文中,将参照第二实施例描述根据第二实施例的波荡器。  图6 。 相同的附图标记分配给具有与第一实施例中的功能相同的功能的部件,并且将不再重复对其的描述。 \n\n [0043] 根据第二实施例,提供了一对第一制冷剂通过管30A和一对第二制冷剂通过管30B,并且每个第一制冷剂通过管30A通过连接部件31A连接到第一支撑体21。 类似地,每个第二制冷剂通过管30B通过连接部件31B连接至第二支撑体22。 每个连接部件31A和31B具有柔性。 因此,尽管每个制冷剂通过管30A和30B都固定到真空室1,即使第一和第二支撑体21和22垂直移动,支撑体21和22与制冷剂通过管30A之间的连接状态也是如此。 可以分别维持30B和30B。 \n\n  第三实施例 \n\n [0044] 在下文中,将参考第三实施例描述根据第三实施例的波荡器。  图7 。 该实施例与第二实施例的不同之处在于,第一制冷剂通过管30A和第二制冷剂通过管30B通过固定单元32A和32B固定到第一支撑体21和第二支撑体22。 固定单元32A和32B由金属板(诸如铜板(铍铜和等效铜),不锈钢板或铝板)形成。 当第一支撑体21和第二支撑体22竖直运动时,第一制冷剂通过管30A和第二制冷剂通过管30B也分别竖直地运动。 因此,不使用具有挠性的连接部件。 另外,当固定单元32A和32B必须具有耐热性时,优选地,它们由不锈钢板形成。 \n\n  第四实施例 \n\n [0045] 在下文中,将参考第四实施例对根据第四实施例的波荡器进行描述。  图8 。 该实施例与第三实施例的不同之处在于,第一和第二制冷剂通过管30A和30B分别直接固定到第一和第二支撑体21和22的侧面。 没有提供第三实施例中所示的定影单元。 类似于第三实施例,当第一支撑体21和第二支撑体22竖直移动时,第一制冷剂通过管30A和第二制冷剂通过管30B也分别被竖直移动。 因此,不使用具有挠性的连接部件。 由于制冷剂通过管30A和30B分别直接安装在支撑体21和22上,因此可以有效地进行冷却过程。 另外,尽管在第四实施例中没有设置加热器,但是可以通过改变制冷剂的温度来控制温度。 这类似于接下来的第五实施例。 \n\n  第五实施例 \n\n [0046] 在下文中,将参照第五实施例描述根据第五实施例的波荡器。  图9 。 根据该实施例,第一制冷剂通过管30A被掩埋在第一支撑体21的第一磁体安装梁21b中。第二制冷剂通过管30B被类似地掩埋在第二磁体安装梁22b中。 当第一支撑体21和第二支撑体22竖直移动时,第一制冷剂通过管30A和第二制冷剂通过管30B分别一起运动。 由于制冷剂通过管30A和30B分别掩埋在支撑体21和22中,因此可以有效地进行冷却过程。 \n\n  例 \n\n [0047] 在下文中,将参照示例对根据示例的波荡器进行描述,而不是构成本发明的一部分。  图10 。 根据实例后  图10 接下来,将描述使用冷冻机33的冷却机构。 如图所示  图10 然后,在冷冻室1的两侧配置有一对冷冻机33,在冷冻室1内插入有冷却头330。冷却头330的上侧与第一支撑体21连接。 连接部件31A。 冷却头330的下侧通过第二连接部件31B连接至第二支撑体22。 冷冻机33可以基于绝热膨胀的原理来冷却磁路11和12。 与第一实施例类似,连接部件31A和31B具有柔性。 因此,即使当第一支撑体21和第二支撑体22竖直移动时,也可以维持每个支撑体21和22与冷却头330之间的连接状态。 \n\n  例 \n\n [0048] 在下文中,将参考示例对根据示例的波荡器进行描述,而不是构成本发明的一部分。  图11 。 根据该示例,提供了一对第一冷冻机33A和一对第二冷冻机33B。 第一冷冻机33A的第一冷却头330A通过第一连接部件31A连接到第一支撑体21,第二冷冻机33B的第二冷却头330B通过第二连接连接到第二支撑体22。 组件31B。 连接部件33A和33B具有柔性。 因此,即使当第一支撑体21和第二支撑体22竖直移动时,也可以维持每个支撑体21和22与冷却头330之间的连接状态。 \n\n  例 \n\n [0049] 在下文中,将参考示例对根据示例的波荡器进行描述,而不是构成本发明的一部分。  图12 。 如图所示  图12 然后,将第一冷冻机33A设置在真空室1的上方,将大致L字形的冷却头330A插入真空室1。第一支撑体21的第一磁体安装梁21b的相反侧连接至真空室1。 冷却头330A通过连接部件34A。 不同于其他实施例/示例,在第一磁体安装梁21b的中央凹部处设置有第一加热器21c。 第二冷冻机33B设置在真空室1的下方,并且冷却头330B,连接部件34B,第二加热器22c等以相同的方式布置。 由于连接部件34A和34B具有挠性,所以即使第一和第二支撑体21和22竖直移动,也可以保持每个支撑体21和22与冷却头330A和330B之间的连接状态。 \n\n  例 \n\n [0050] 在下文中,将参考示例对根据示例的波荡器进行描述,而不是构成本发明的一部分。  图13 。 尽管冷冻机33A和33B的布置与先前示例中的布置相同,但是该示例的不同之处在于,冷却头330A和330B的边缘分别直接固定至第一磁体安装梁21和第二磁体安装梁22b。 因此,当第一支撑体21和第二支撑体22竖直运动时,第一冷冻机33A和第二冷冻机33B也分别竖直运动。 另外,由于在每个冷却头330A和330B的周围设置有波纹管35,所以在真空室1保持真空的同时,冷却头330A和330B可以竖直地移动。 \n\n [0051] 根据该示例,当将加热器结合在冷却头330A和330B中时,可以控制温度。 \n\n  永磁体的具体例子 \n\n [0052]  图14  图1示出构成根据本发明的波荡器的磁路11和12的优选永磁体的具体示例。 参考  图14 由Nd-Fe-B形成由数字1至5表示的永磁体,并且由于它们提供自旋取向,因此它们的Br(剩余磁通密度)在极低的温度下降低。 由数字6表示的永磁体由Pr-Fe-B形成,并且不提供自旋取向。 霍尔元件用于测量磁场。 附图标记RT表示室温,附图标记LNT表示液氮温度(77K),附图标记LHeT表示液氦温度(4.2K)。 \n\n [0053] 尽管混合类型在  图3 ,在这种类型中使用的软磁体材料可以是permendur,Ho(hol),Dy(dy),纯铁等。 每个实施例/示例中的磁路可以是哈尔巴赫型或混合型。 \n\n  影响  \n\n [0054] 根据本发明的波荡器,提供以下功能和效果。 当通过冷却机构冷却波荡器时,与在室温下使用波荡器的情况相比,剩余磁通密度(Br)变高并且可以在空间中形成强磁场。 当波荡器被冷却时,固有磁力矫顽力(iHc)增加,并且抗辐射特性可以相应地增强。 由于磁路,保持器和保持器支撑件通过冷却机构冷却,因此在实现超高真空时不需要烘烤过程。 因此,不必考虑在烘烤过程中引起的热消磁,并且可以使用具有高能量积的永磁体。 \n\n [0055] 常规地,当执行从永磁体的表面脱气以在真空室中提供目标真空度时,以防止当在烘烤中将永磁体加热到约100℃时永磁体的热消磁。 在此过程中,必须选择具有高iHc的材料。 由于高iHc材料由于互补关系而无条件地具有低Br,因此在磁路中形成的磁通密度低。 \n\n [0056] 同时,根据本发明,由于当永磁体被冷却时气体分子被捕集在磁体表面上,因此可以提供目标真空度而无需在烘烤过程中进行脱气操作。 即,由于磁体未被加热,因此不需要选择高iHc材料来防止热退磁。 因此,可以选择高Br材料,并且由于Br在低温下升高,因此可以提供更高的磁通密度。');
INSERT INTO `os_patent_instruction_text` VALUES (13045, 22874, '明 細 書\n\n揷入光源\n\n技術分野\n\n【0001】 本発明は、周期磁場を形成するための第 1磁気回路と、この第 1磁気回路を支持す るための第 1支持体と、第 1磁気回路に対向配置され、周期磁場を形成するための 第 2磁気回路と、この第 2磁気回路を支持するための第 2支持体と、対向配置される 第 1磁気回路と第 2磁気回路の間に形成され、電子ビームが通過するための空間部 と、第 1磁気回路と第 2磁気回路とを真空封止する真空槽とを備えた挿入光源に関 するものである。\n\n背景技術\n\n【0002】 真空中において光速近くまで加速された電子ビームが磁場中で曲げられると、電 子ビームの移動軌跡の接線方向に放射光を発光し、これをシンクロトロン放射光と呼 んでいる。このシンクロトロン放射光を発生する光源を、電子貯蔵リング (電子ビーム 蓄積リング)の直線部に設置し、高指向性、高強度、高偏光性等の特性を生力した種 々の技術の実用化のための研究が行われている。今日の電子貯蔵リングには、より 高いビーム電流、より小さなビーム断面積、より高いビーム指向性による高輝度光源 である挿入光源 (アンジュレータ）が多数設けられて！/、る。\n\n【0003】 この挿入光源は、例えば、下記特許文献 1や非特許文献 1, 2に見られるように、電 子ビームが通過する周期磁場を形成するために、第 1磁気回路と第 2磁気回路とを 空間部を介して対向配置させた構成を採用している。周期磁場を形成するために、 第 1 ·第 2磁気回路は多数の永久磁石を並べて構成される。強い磁場を構成しようと する場合は、第 1磁気回路と第 2磁気回路をできるだけ近づければ、空間部の間隔（ いわゆるギャップ）を狭くできるので磁場の強さも大きくなる。そのために、第 1磁気回 路と第 2磁気回路を真空槽で封止する構成を採用している。第 1磁気回路と第 2磁気 回路の間に真空槽を設ける構成に比べると、ギャップを狭くすることができるという利 点を有している。\n\n【0004】 し力しながら、上記のような構成でギャップを狭くするにしても、永久磁石の特性上\n\n限界がある。また、ギャップをあまり狭くしすぎると、電子ビームが永久磁石に衝突す ることによって生じた放射線による永久磁石の減磁という新たな問題が発生する。従 つて、ギャップを狭くするという方法のみで磁場を強くするには限界があった。\n\n特許文献 1：特開 2000— 206296号公報\n\n非特干文献 1： In— vacuum unaulators of SPring— 8, T. Hara, T. Tanaka, T. Tanabe, X. M. Marechal, S. Okada and H. Kitamura J. Synchrotron\n\nRadiation 5, 403 (1998)\n\n非特許文献 2 : Construction of an in— vacuum undulator for production of undulator x— rays in the 5— 25 keV region. S. Yamamoto, T. Shioya, M. Hara, H. Kitamura, X. W. Zhang, T. Mochizuki, H. S ugiyama and M. Ando ; Rev. Sci. Instrum. 61 (1992) 400.\n\n発明の開示\n\n発明が解決しょうとする課題\n\n【0005】 本発明は上記実情に鑑みてなされたものであり、その課題は、第 1磁気回路と第 2 磁気回路とを空間部を隔てて対向配置させる場合に、空間部に形成される磁場を強 くできると共に耐放射線特性を改善した挿入光源を提供することである。\n\n課題を解決するための手段\n\n【0006】 上記課題を解決するため本発明に係る挿入光源は、\n\n周期磁場を形成するための第 1磁気回路と、\n\nこの第 1磁気回路を支持するための第 1支持体と、\n\n第 1磁気回路に対向配置され、周期磁場を形成するための第 2磁気回路と、 この 第 2磁気回路を支持するための第 2支持体と、\n\n対向配置される第 1磁気回路と第 2磁気回路の間に形成され、電子ビームが通過 するための空間部と、\n\n第 1磁気回路と第 2磁気回路とを真空封止する真空槽と、\n\n第 1磁気回路と第 2磁気回路を構成する永久磁石を室温以下に冷却するための冷 却機構とを備えて 、ることを特徴とするものである。\n\n【0007】 この構成による挿入光源の作用 ·効果を説明する。周期磁場を形成するために、第\n\n1磁気回路と第 2磁気回路とが空間部を挟んで対向配置される。第 1磁気回路は第 1 支持体に支持され、第 2磁気回路は第 2支持体に支持される。第 1磁気回路と第 2磁 気回路は、共に真空槽内に真空封止される。この周期磁場が形成される空間部に電 子ビームを通過させることで、シンクロトロン放射光を発生させることができる。第 1磁 気回路と第 2磁気回路は、夫々永久磁石により構成されるが、この永久磁石を室温 以下に冷却させるための冷却機構を備えている。永久磁石を冷却することで、常温 で使用する場合よりも、残留磁束密度 (Br)や保磁力（iHcで表わし、 I Hカーブ (減 磁カーブ）が H軸を横切る点での Hの大きさのことで固有保磁力という）が上がるとい う特性がある。残留磁束密度が上がることで、磁気特性が高くなり空間部に強力な磁 場を形成することができる。また、保磁力が上昇することにより、耐放射線の特性が高 くなることが知られている。その結果、第 1磁気回路と第 2磁気回路とを空間部を隔て て対向配置させる場合に、空間部に形成される磁場を強くできると共に耐放射線特 性を改善した挿入光源を提供することができる。\n\n【0008】 従来は、ベーキング処理中は永久磁石が所定温度以上に加熱されないように 120\n\n°c程度の熱水を、使用時は電子ビーム力もたらす熱によって磁気回路温度が不安 定にならないよう室温程度の冷却水を循環させて磁気回路を冷却している。\n\n【0009】 本発明の挿入光源として、更に、前記空間部の間隔を変更するための間隔変更機 構と、\n\n前記冷却機構に設けられ、冷媒を通過させるための冷媒通過管と、\n\nこの冷媒通過管と、第 1支持体及び第 2支持体とを連結する連結部とを備え、 この連結部が柔軟性を有し、前記間隔変更機構による間隔の変更を許容するよう に構成されて 、ることが好まし 、。\n\n【0010】 間隔変更機構を設けることで、空間部の間隔を変更することができるように構成する ことで、これにより、磁場の強さも調整することができる。また、磁気回路を組み込むと きも組立を行い易くできる。冷却機構として、冷媒を通過させるための冷媒通過管を 設け、これを第 1支持体と第 2支持体に連結部により連結する。従って、連結部を介し て各支持体に支持される磁気回路を冷却させることができる。また、連結部は柔軟性 を有しているため、冷媒通過管を固定させた状態で、空間部の間隔を変更したとして\n\nも (第 1 ·第 2支持体を移動させたとしても）、容易に移動させることができる。\n\n【0011】 本発明に係る別の冷却機構は、第 1磁気回路を冷却するために設けられ、冷媒を 通過させるための第 1冷媒通過管と、\n\n第 2磁気回路を冷却するために設けられ、冷媒を通過させるための第 2冷媒通過管 とを備え、\n\n第 1冷媒通過管を第 1支持体に対して固定支持すると共に、第 2冷媒通過管を第 2 支持体に対して固定支持するように構成されて 、ることが好ま 、。\n\n【0012】 この場合は、第 1冷媒通過管は第 1支持体に固定支持され、第 2冷媒通過管は第 2 支持体に固定支持される。これにより、各支持体に支持される磁気回路が冷却される 。なお、この構成によれば、第 1 ·第 2支持体を移動させる場合に、各支持体に固定し た冷媒通過管も共に移動する構成であるから、柔軟性を有する連結部を設けなくて も良い。\n\n【0013】 本発明に係る更に別の冷却機構は、第 1磁気回路を冷却するために設けられ、冷 媒を通過させるための第 1冷媒通過管と、\n\n第 2磁気回路を冷却するために設けられ、冷媒を通過させるための第 2冷媒通過管 とを備え、\n\n第 1冷媒通過管を第 1支持体の内部を貫通するように構成すると共に、第 2冷媒通 過管を第 2支持体の内部を貫通するように構成されて 、ることが好ま U、。\n\n【0014】 冷媒を支持体の内部を貫通させるようにすることで、効率良く磁気回路を冷却させ ることがでさる。\n\n【0015】 本発明として、空間部の間隔を変更するための間隔変更機構と、\n\n前記冷却機構に設けられ、冷凍機により冷却される冷却ヘッドと、\n\nこの冷却ヘッドと、第 1支持体及び第 2支持体とを連結する連結部とを備え、 この連結部が柔軟性を有し、前記間隔変更機構による間隔の変更を許容するよう に構成されて 、ることが好まし 、。\n\n【0016】 先ほどは冷媒通過管を設けることで冷却機構を構成する例を説明したが、冷凍機 を用いた構成も考えられる。この場合、冷凍機の冷却ヘッドを第 1支持体及び第 2支 持体に対して連結部を介して連結させることができる。この場合、連結部は柔軟性を\n\n有しているので、空間部の間隔を変更する場合に、容易に追従させることができる。\n\n【0017】 本発明において、前記第 1支持体を支持する第 1支持軸と、前記第 2支持体を支持 する第 2支持軸とに夫々中空部を形成して!/、ることが好ま 、。\n\n【0018】 磁気回路を冷却する冷却機構を設ける場合に、挿入光源の外部からの熱伝導を抑 制する必要がある。第 1 ·第 2支持体を支持する支持軸は、強度が必要とされるため、 金属で形成されるが、金属は熱伝導性がよいため外部からの熱が伝わりやすい。そ こで、支持軸を中空に形成することで、熱を伝わりにくくすることができる。よって、磁 気回路を所望の冷却温度に設定することができる。\n\n【0019】 本発明において、第 1磁気回路の温度を検出する第 1温度センサーと、\n\n第 1磁気回路を加熱可能な第 1ヒーターと、\n\n第 2磁気回路の温度を検出する第 2温度センサーと、\n\n第 2磁気回路を加熱可能な第 2ヒーターと、\n\n第 1 ·第 2温度センサーによる温度計測データに基づいて、第 1ヒーター及び第 2ヒ 一ターを制御する温度制御部とを備えて 、ることが好ま 、。\n\n【0020】 永久磁石を冷却させる場合、残留磁束密度は温度の低下と共に大きくなつている 力 ある温度以上に低下させると逆に残留磁束密度が小さくなるという特性を示す永 久磁石も存在する。従って、カゝかる永久磁石を用いて磁気回路を構成する場合は、 冷却温度を制御する必要がある。そこで、各磁気回路を加熱可能なヒーターと、各磁 気回路の温度を検出する温度センサーと、各ヒーターを制御する温度制御部を設け ることで、適切な冷却温度となるように制御することができる。\n\n【0021】 本発明において、第 1支持体及び第 2支持体は、夫々、永久磁石を取り付けるホル ダ一部と、このホルダー部を支持するホルダー支持部とを有し、\n\nこのホルダー部の材質をホルダー支持部の材質よりも熱膨張率が大きいか等しくな るようにすることが好ましい。\n\n【0022】 永久磁石をホルダー部に対して組み立てる作業は常温で行い、実際に挿入光源を 稼動させる場合は、所望の冷却温度に冷却させる。この場合、ホルダー部よりもホル ダー支持部の材質の熱膨張率が大きいと、冷却させた場合に熱膨張率の違いに起 因して、ホルダー部が変形し磁気回路が破損してしまう。そこで、ホルダー部とホルダ\n\n一支持部とを同一の材質 (熱膨張率が等 、)で形成するか、ホルダー部の熱膨張 率がホルダー支持部よりも大きくなるようにすれば、熱膨張率の違いによるホルダー 部の変形を生じさせなくてすむ。\n\n図面の簡単な説明\n\n【0023】 [図 1]第 1実施形態に係る挿入光源の縦断面図\n\n[図 2]磁気回路の構成を示す図\n\n[図 3]磁気回路の別構成を示す図\n\n[図 4]温度制御に関する制御ブロックを示す図\n\n[図 5]磁石の特性を示すグラフ\n\n[図 6]第 2実施形態に係る挿入光源の縦断面図\n\n[図 7]第 3実施形態に係る挿入光源の縦断面図\n\n[図 8]第 4実施形態に係る挿入光源の縦断面図\n\n[図 9]第 5実施形態に係る挿入光源の縦断面図\n\n[図 10]第 6実施形態に係る挿入光源の縦断面図\n\n[図 11]第 7実施形態に係る挿入光源の縦断面図\n\n[図 12]第 8実施形態に係る挿入光源の縦断面図\n\n[図 13]第 9実施形態に係る挿入光源の縦断面図\n\n[図 14]永久磁石の具体例を示す図\n\n発明を実施するための最良の形態\n\n【0024】 本発明に係る挿入光源の好適な実施形態を図面を用いて説明する。図 1は、第 1 実施形態に係る挿入光源の縦断面図を示す図である。図 2は、磁気回路の構成を示 す概念図である。図 3は、磁気回路の別構成を示す概念図である。\n\n【0025】 まず、磁気回路について説明する。図 2は、いわゆるハルバッハ型と呼ばれる磁気 回路を示している。第 1磁気回路 11と第 2磁気回路 12とが空間部 13を隔てて配置さ れている。第 1磁気回路 11は、 4つの永久磁石 11a— l idを 1組として、これが多数 組み電子ビームの進行方向に沿って並べられて 、る。各永久磁石 1 la— 1 Idの磁 化方向は矢印で示されている。第 2磁気回路 12も、 4つの永久磁石 12a— 12dを 1組 として、これが多数組み電子ビームの進行方向に沿って並べてられている。よって、\n\n磁場の周期は図のようにえで表わされる。この磁石の配列ピッチについては、目的に 応じて適宜変更できるものである。\n\n【0026】 空間部 13のギャップ間隔は gで表わされる。この間隔 gは、間隔変更機構により変 更可能に構成されている。間隔を変更することで、磁場の強さを調整することができ る。図 2に示すような永久磁石の配置を行うことで、空間部 13に周期磁場を形成する ことができる。この空間部 13に電子ビームを通過させると、周期磁場の影響を受けて 電子ビームが蛇行しながら進行する。電子ビームの蛇行面 Mは、対向している第 1 · 第 2磁気回路の磁石の面と平行である。電子ビームを蛇行進行させることで、所望の シンクロトロン放射光を発生させることができる。\n\n【0027】 図 2に示す磁気回路は永久磁石のみにより構成されている力 図 3に示すいわゆる ノ、イブリツド型とよばれる磁気回路では、永久磁石と永久磁石の間に軟磁性体を配 置している。すなわち、 第 1磁気回路は、永久磁石 11A, 11Cと軟磁性体 11B, 11 Dが交\n\n互に配置されており、第 2磁気回路は、永久磁石 12A, 12Cと軟磁性体 12B, 12D が交互に配置されている。磁化方向（磁束の方向）については、矢印に示している通 りである。本発明に係る挿入光源においては、いずれの磁気回路を採用してもよぐ 特定の構成を有する磁気回路に限定されるものではない。\n\n【0028】 \n\n次に第 1実施形態に係る挿入光源の構成を説明する。図 1は、電子ビームの進行 方向に対して垂直な面で切断した場合の縦断面図である。第 1磁気回路 11と第 2磁 気回路 12とが空間部 13を介して対向配置されている。第 1磁気回路 11は、図 2でも 説明したように、多数の永久磁石 mが電子ビームの進行方向（図 1の紙面に垂直方 向）に沿って多数並べて配置されている。第 2磁気回路 12も同様に永久磁石 mが多 数並べて配置されている。なお、好ましい永久磁石 mの具体例については、後述す る。\n\n【0029】 第 1磁気回路 11を取り付け支持するために第 1支持体 21が設けられ、この第 1支 持体 21は、第 1磁石ホルダ 21a (ホルダー部に相当）と第 1磁石取付ビーム 21b (ホ ルダー支持部に相当）とを備えている。従来は、ベーキング処理により高温にするた\n\nめ、第 1磁石ホルダ 21aは無酸素銅により形成し、第 1第 1磁石取付ビーム 21bはァ ルミ-ゥムにより形成していた力 本発明においては、いずれも無酸素銅で形成する 。後述するように、磁気回路 11, 12を冷却させると、磁石ホルダ 21aも磁石取付ビー ム 21bも寸法が縮む力 同じ材料であるから寸法変化に伴う磁石ホルダ 21aの変形 が生じない。従って、磁気回路 11, 12を冷却させたとしても、永久磁石 mを変形させ て破損させるなどの事故が生じることがな 、。\n\n【0030】 なお、第 1磁石ホルダ 21aをアルミニウムで形成し、第 1磁石取付ビーム 21bを無酸 素銅で形成しても良い。この場合も、アルミニウムの方が熱膨張率が無酸素銅よりも 大きいので、冷却させたとしても、磁気回路 11, 12が破損する方向への変形は生じ ない。\n\n【0031】 第 2磁気回路 12を取り付け支持するための第 2支持体 22、第 2磁石ホルダ 22a、第 2磁石取付ビーム 22bにつ 、ても第 1磁気回路 11と同様である。\n\n【0032】 次に、各磁気回路 11, 12を冷却するための冷却機構の構成について説明する。\n\n冷却機構として、冷媒を通過させるための冷媒通過管 30を設けており、空間部 13の 左右両側に一対の冷媒通過管 30が設けられている。冷媒としては、特定のものに限 定されないが、例えば、液体窒素、液体ヘリウム等の液ィ匕された冷媒が好ましい。冷 媒通過管 30も電子ビームの進行方向に沿って配置されて 、る。冷媒は所定の循環 経路により循環される構造を採用する。\n\n【0033】 冷媒通過管 30と第 1 ·第 2支持体 21, 22とは連結部 31を介して接続されている。\n\n連結部 31は、柔軟性を有する形状（図示するようにアコーディオン式に折り畳める構 造）に形成され、第 1 ·第 2支持体 21, 22が上下方向に移動したとしても、各支持体 2 1, 22と冷媒通過管 30との連結状態を維持できるようにしている。連結部 31は、熱伝 導性の良い導体 (例えば、銅 (無酸素銅やベリリウム銅）、 アルミニウム）により形成さ れる。なお、冷媒通過管 30は、固定された状態である。\n\n【0034】 連結部 31に柔軟性を持たせるのは上記の理由である力 更に、若干の熱抵抗を付 与するという目的も有する。熱抵抗を持たせることにより、後述する温度制御を精度よ く行うことができる。\n\n【0035】 冷却機構により磁気回路 11, 12を冷却する場合、室温以下でかつ液体窒素ある\n\nいは液体ヘリウム以上の温度となるように設定する。なお、設定温度は使用する冷媒 の種類や磁気回路 11, 12を構成する永久磁石 mの種類によって異なるものである。\n\n【0036】 次に、永久磁石 mを冷却させることにより生じる効果を説明する。永久磁石の一般 的な特性として、冷却により残留磁束密度 Brが高くなる。これにより、空間部 13にお いて強力な磁場を形成することができる。また、永久磁石を冷却することにより保磁力 が高くなる。これにより、耐放射線特性が上昇する。また、永久磁石を冷却させること で、真空槽 1内の永久磁石の表面力もの気体分子の脱離が減少する。従って、磁気 回路 11 , 12に対してベーキング処理を行わな 、でも真空槽 1内を超高真空にするこ とができる。ベーキング処理を行うときは所定の温度に加熱しなければならないが、 永久磁石を加熱すると熱減磁という問題が発生する。従って、従来のように、ベーキ ング処理における熱減磁を考慮して、室温で高保磁力かつ低残留磁束密度の材料 を選択する必要があった。しかし、本発明の場合、そのような熱減磁を考慮しなくて良 V、ので、常温で低保磁力かつ高残留磁束密度を有する材料を選択することができ、 これにより、空間部 13に強力な磁場を形成することができる。\n\n【0037】 第 1 ·第 2磁気回路 11, 12は、真空槽 1の中に真空封止されている。真空槽 1の中 に磁気回路 11, 12も封止することで、ギャップ間隔 gを小さくすることができる。また、 真空封止することで断熱効果を有するので、挿入光源 Rが設置される室内の熱が真 空槽 1を介して磁気回路 11, 12に伝達しに《することができる。\n\n【0038】 第 1 ·第 2磁気回路 11, 12を支持した第 1 ·第 2支持体 21, 22は、不図示の間隔変 更機構により上下方向（図 1の矢印 A, B)に移動させることができる。間隔変更機構と しては、例えば、前述した特許文献 1あるいは非特許文献 1に開示される機構を用い ることができる。間隔変更機構により、空間部 13のギャップ間隔 gを変更することがで きる。ギャップ間隔 gを変更することで、空間部 13における磁場の強さが所望になるよ うに調節することができる。\n\n【0039】 第 1支持体 21の上部は、第 1支持軸 14により支持されている。第 1支持軸 14は、金 属製であるが、その内部を中空に形成している。第 1支持軸 14は、そのほとんどが真 空槽 1の外部にあるため、室内 (真空槽外部）の熱が第 1支持軸 14を伝わって第 1磁 気回路 11の温度を上げる方向に作用する。これを極力抑制するために、第 1支持軸\n\n14を中空として熱が伝わりに《している。第 2支持体 22の下部も第 2支持軸 15によ り支持されているが、同様の理由で内部を中空に形成している。これにより、支持軸 1 4, 15としての強度を確保しつつ、熱伝導性を低下させている。各支持軸 14, 15の 周囲にはべローズ 16が設けられており、真空槽 1内部の真空性を維持しながらも、各 支持軸 14, 15の上下移動を許容している。\n\n【0040】 挿入光源は、常温室内に配置されるため、赤外線等による輻射熱を極力避ける必 要がある。各磁気回路 11, 12は、真空槽 1により真空断熱をされているが、輻射熱に より磁気回路 11, 12を十分に冷却できないということもありうる。そこで、熱を反射させ るための仕組みが必要である。例えば、支持体 21, 22の磁石ホルダ 21a, 22aと磁 石取付ビーム 21b, 22bの表面に金メッキ等を施して輻射熱を反射するようにするこ とが好ましい。\n\n【0041】 第 1支持体 21には、第 1磁石取付ビーム 21bの裏面側に第 1ヒーター 21cが設けら れている。第 2支持体 22にも同様に第 2ヒーター 22cが設けられている。また、第 1 · 第 2磁石取付ビーム 21b, 22bの内部に温度センサー 21d, 22dを埋め込み配置す る（図 1では不図示)。図 4は、温度制御部 23の構成を示す制御ブロック図である。温 度設定部 24には、永久磁石を冷却制御する温度データが設定されている。温度制 御部 23は、各温度センサー 2 Id, 22dからの計測された温度データと、設定されて いる温度データとを比較して所望の温度になるように、各ヒーター 21c, 22cを個別に 制御する。\n\n【0042】 ヒーターとしては、例えば、シースヒーターを用いることができる。各ヒーター 21c, 2 2cの取り付けは、各磁石取付ビーム 21b, 22bの裏面側に銅板等で押さえつけて、 ネジ止めすることで行うことができる。温度センサーとしては、白金を使用した測温抵 抗体や熱電対を用いることができる。\n\n【0043】 温度制御部 23は、必ずしも必要ではないが、次のような場合には設けておくことが 好ましい。永久磁石の特性として、低温にすればするほど磁気特性が上昇する場合 は問題がないが、図 5に示すように、ある特定の低温において残留磁束密度がピーク を示すような永久磁石材料も存在する。例えば、 TSR (スピン再配列温度）以下の 温度でスピン再配列を起こすような希土類一鉄 ボロン系磁石である場合、 TSR以下\n\nの温度に冷却されないように磁気回路 11, 12に対して温度制御を行う必要がある。\n\n【0044】 \n\n次に、第 2実施形態に係る挿入光源を図 6により説明する。第 1実施形態と同じ機 能をする部分については、同じ図番を付することにして説明を省略する。\n\n【0045】 第 2実施形態では、第 1冷媒通過管 30Aと第 2冷媒通過管 30Bとを備えており、第 1冷媒通過管 30Aは左右一対設けられ、夫々連結部 31Aを介して第 1支持体 21〖こ 対して連結される。また、第 2冷媒通過管 30Bも同様に連結部 31Bを介して第 2支持 体 22に対して連結される。各連結部 31 A, 31Bは柔軟性を有している。これにより、 各冷媒通過管 30A, 30Bは真空槽 1に対して固定されて取り付けられているが、第 1 •第 2支持体 21, 22が上下方向に移動したとしても、各支持体 21, 22と冷媒通過管 30A, 30Bとの連結状態を維持できるようにして 、る。\n\n【0046】 \n\n次に、第 3実施形態に係る挿入光源を図 7により説明する。第 2実施形態と異なるの は、第 1 ·第 2冷媒通過管 30A, 30Bが固定手段 32A, 32Bを介して夫々第 1支持体 21、第 2支持体 22に対して固定支持されることである。固定手段 32A, 32Bは、金属 (例えば、 銅板 (ベリリウム銅等）、ステンレス板、アルミニウム板)で形成される。第 1 支持体 21や第 2支持体 22を上下移動させるときは、第 1冷媒通過管 30Aと第 2冷媒 通過管 30Bもいっしょに上下移動する構成である。従って、柔軟性を有する連結部 は用いられていない。なお、固定手段 32A, 32Bに熱抵抗を持たせる必要がある場 合には、ステンレス板で形成することが好ましい。\n\n【0047】 \n\n次に、第 4実施形態に係る挿入光源を図 8により説明する。第 3実施形態と異なるの は、第 1 ·第 2冷媒通過管 30A, 30Bが、直接的に第 1支持体 21と第 2支持体 22の 側面部に固着されている点である。第 3実施形態に示すような固定手段は設けられ ていない。また、第 3実施形態と同様に、第 1支持体 21や第 2支持体 22を上下移動 させるときは、第 1冷媒通過管 30Aと第 2冷媒通過管 30Bもいっしょに上下移動する 構成である。従って、柔軟性を有する連結部は用いられていない。各冷媒通過管 30 A, 30Bを直接的に各支持体 21, 22に対して取り付けているので、効果的に冷却を\n\n行うことができる。また、第 4実施形態はヒーターを設けていないが、冷媒の温度を可 変とすることで温度制御を行うことができる。次の第 5実施形態も同様である。\n\n【0048】 \n\n次に、第 5実施形態に係る挿入光源を図 9により説明する。この実施形態では、第 1 冷媒通過管 30Aは、第 1支持体 21の第 1磁石取付ビーム 21bの内部に埋め込まれ た形で設けられる。第 2冷媒通過管 30Bも同様に第 32磁石取付ビーム 22bの内部に 埋め込まれている。第 1支持体 21や第 2支持体 22を上下移動させるときは、第 1冷媒 通過管 30Aと第 2冷媒通過管 30Bもいっしょに上下移動する構成である。支持体 21 , 22の内部に冷媒通過管 30A, 30Bを埋め込み配置しているので、効果的に冷却 を行うことができる。\n\n【0049】 \n\n次に、第 6実施形態に係る挿入光源を図 10により説明する。図 10以下の実施形態 では、冷凍機 33を用いた冷却機構を説明する。図 10に示すように、真空槽 1の左右 両側に一対の冷凍機 33を配置し、その冷却ヘッド 330を真空槽 1の内部に臨ませる 。冷却ヘッド 330の上端側を第 1連結部 31Aにより第 1支持体 21に対して連結する。 冷却ヘッド 330の下端側を第 2連結部 31Bにより第 2支持体 22に対して連結する。 冷凍機 33は、断熱膨張の原理に基づき各磁気回路 11, 12を冷却させることができ る。連結部 31A, 31Bは、第 1実施形態と同様に柔軟性を有している。これにより、第 1 ·第 2支持体 21, 22が上下方向に移動したとしても、各支持体 21, 22と冷却ヘッド 330との連結状態を維持できるようにして 、る。\n\n【0050】 \n\n次に、第 7実施形態に係る挿入光源を図 11により説明する。この実施形態では、一 対の第 1冷凍機 33Aと、一対の第 2冷凍機 33Bとが設けられている。第 1冷凍機 33A の第 1冷却ヘッド 330Aは、第 1連結部 31Aを介して第 1支持体 21と連結され、第 2 冷凍機 33Bの第 2冷却ヘッド 330Bは、第 2連結部 31Bを介して第 2支持体 22と連結 される。各連結部 33A, 33Bは柔軟性を有しており、第 1 ·第 2支持体 21, 22が上下 方向に移動したとしても、各支持体 21, 22と冷却ヘッド 330との連結状態を維持でき るようにしている。\n\n【0051】 \n\n次に、第 8実施形態に係る挿入光源を図 12により説明する。図 12に示すように第 1 冷凍機 33Aを真空槽 1の上方に置き、略 L字形に形成された冷却ヘッド 330Aの先 端を真空槽 1の内部に臨ませる。第 1支持体 21の第 1磁石取付ビーム 21bの裏面側 において、連結部 34Aを介して冷却ヘッド 330Aと連結させる。第 1ヒーター 21cは、 他の実施形態とは異なり、第 1磁石取付ビーム 21bの中央凹部に設けている。第 2冷 凍機 33Bは真空槽 1の下方に置き、その他の冷却ヘッド 330B、連結部 34B、第 2ヒ 一ター 22c等の配置構成は同じである。各連結部 34A, 34Bは柔軟性を有しており 、第 1 ·第 2支持体 21, 22が上下方向に移動したとしても、各支持体 21, 22と冷却へ ッド 330A, 330Bとの連結状態を維持できるようにして 、る。\n\n【0052】 \n\n次に、第 9実施形態に係る挿入光源を図 13により説明する。冷凍機 33A, 33Bの 配置は、第 8実施形態と同じであるが、冷却ヘッド 330A, 330Bの先端を直接第 1 · 第 2磁石取付ビーム 21b, 22bに対して固定している。従って、第 1 ·第 2支持体 21, 22が上下方向に移動すると、これといっしょに第 1冷凍機 33Aと第 2冷凍機 33Bも上 下移動することになる。なお、冷却ヘッド 330A, 330Bの周囲にはべローズ 35が設 けられており、真空槽 1内部の真空性を維持しながらも、冷却ヘッド 330A, 330Bの 上下移動を許容している。\n\n【0053】 第 9実施形態では、冷却ヘッド 330A, 330Bにヒーターを内蔵させることで温度制 御を行うことも可能である。\n\n【0054】 \n\n本発明に係る挿入光源の磁気回路 11, 12を構成するのに好適な永久磁石の具体 例を図 14に示す。図 14において、番号 1一 5までは Nd— Fe— B系の永久磁石であり 、スピン再配列を示すため、極低温で Br (残留磁束密度）が減少する。番号 6は Pr - Fe— B系の永久磁石であり、スピン再配列を示さない。なお、磁場の測定にはホール 素子を用いた。 RTは室温、 LNTは液体窒素温度（77K)、 LHeTは液体ヘリウム温 度 (4. 2K)を示している。\n\n【0055】 図 3でノヽイブリツド型を説明した力 このタイプで使用する軟磁性材料にっ ヽては、\n\nパーメンジュール、 Ho (ホルミウム）、 Dy (ジスプロシウム）、純鉄等を用いることができ る。各実施形態における磁気回路は、ハルバッハ型でもハイブリッド型でも良い。\n\n【0056】 \n\n以上のように本発明に係る挿入光源によれば、次のような作用\'効果を有する。冷 却機構により冷却することで、残留磁束密度 (Br)が上昇し、常温で使用するよりも強 力な磁場を空間部に形成することができる。また、冷却することで固有保磁力（iHc) が上昇し、これに伴い耐放射線性が上昇する。冷却機構により磁気回路、ホルダー 部、ホルダー支持部を冷却する構造であるので、超高真空に引く時にベーキングを 行う必要がない。よって、ベーキングに伴う熱減磁を考慮する必要がなぐ高工ネル ギ一積の永久磁石を使用することができる。\n\n【0057】 従来は、真空槽内において、永久磁石表面力 の脱ガスを行って到達真空度を上 げるために、ベーキング処理で 100°C前後に加熱しても永久磁石が熱減磁しないた めには、 iHcの高い材質を選択する必要があった。高 iHc材料は、相補関係カも必 然的に Brが低いので、磁気回路により形成される磁束密度が低くなる。\n\n【0058】 これに対して、本発明は、永久磁石の冷却によりガス分子が磁石表面にトラップさ れるので、ベーキング処理による脱ガスを行わなくても、目標の到達真空度を得るこ とができる。すなわち、 磁石を加熱しないので、減磁防止のために高 iHc材料を選 択しなくて\n\nも良い。従って、高 Br材料を選択することができ、なおかつ、低温で Brが上昇するの で、更に高い磁束密度が得られる。\n\n【0059】 \n\n各実施形態において夫々開示された構造は、合理的な範囲内で、任意に組み合 わせることができる。', '规格\n\n 光源\n\n 技术领域\n\n  【0001】本发明涉及用于形成周期性磁场的第一磁路，用于支撑该第一磁路的第一支撑件以及被布置为面对该第一磁路的第一磁路。 在彼此面对布置的第一磁路和第二磁路与用于形成磁场的第二磁路，用于支撑第二磁路的第二支撑件以及穿过其的电子束之间形成。 插入光源技术领域本发明涉及一种插入光源，其具有用于保持该空间的空间和用于真空密封第一磁路和第二磁路的真空室。\n\n 背景技术\n\n  【0002】当真空中加速到接近光速的电子束在磁场中弯曲时，它会沿电子束运动轨迹的切线方向发射辐射，这称为同步辐射。  .. 产生该同步加速器辐射的光源被安装在电子存储环（电子束存储环）的笔直部分，并且各种具有高指向性，高强度和高极化特性的技术已投入实际使用。 为此正在进行研究。 当今的电子存储环配备了大量的插入光源（波动器），它们是高亮度光源，具有更高的束流，更小的束横截面和更高的束指向性！  /，ru。\n\n  【0003】，例如，如以下专利文献1和非专利文献1和2中所见，该插入光源用于形成电子束通过的周期性磁场。 使用这样的结构，其中，磁路和磁路彼此相对并且在它们之间具有空间。 为了形成周期磁场，第一和第二磁路由许多并排布置的永磁体组成。 当要形成强磁场时，如果使第一磁路和第二磁路尽可能彼此靠近，则可以缩小空间中的空间（所谓的间隙），并且磁场强度也增加。 因此，使用将第一磁路和第二磁路密封在真空室内的结构。 与在第一磁路和第二磁路之间设置真空室的结构相比，具有可以缩小间隙的优点。\n\n  【0004】即使在施加力的情况下利用上述构造使间隙变窄，\n\n 有一个限制。 此外，如果使间隙太窄，则出现新的问题，即永磁体被电子束与永磁体的碰撞所产生的辐射消磁。 因此，仅通过缩小间隙来增强磁场是有限度的。\n\n 专利文献1：JP 2000-206296 A\n\n 非专利文献1：SPring真空吸气器8，T。Hara，T。Tanaka，T。Tanabe，X.M。Marechal，S。Okada和H. Kitamura J. Synchrotron\n\n 辐射5，403（1998）\n\n 非专利文献2：构造用于在5-25 keV范围内产生波状x射线的真空内波状起伏装置。  H.Sugiyama和M.Ando；《科学评论》，修订版61（1992）400。\n\n 发明内容\n\n 本发明要解决的问题\n\n  【0005】考虑到上述情况做出了本发明，并且本发明的目的是当第一磁路和第二磁路以彼此之间的空间布置为彼此面对时在该空间中形成。 本发明的目的是提供一种插入光源，该插入光源能够增强磁场以提高抗辐射性。\n\n 解决问题的手段\n\n  【0006】为了解决上述问题，根据本发明的插入光源是\n\n 第一磁路，用于形成周期性磁场，\n\n 用于支撑第一磁路的第一支撑，\n\n 布置成面对第一磁路并用于形成周期性磁场的第二磁路；以及用于支撑第二磁路的第二支架，\n\n 在第一磁路和第二磁路之间形成并彼此面对的空间，电子束穿过该空间。\n\n 真空室，用于真空密封第一磁路和第二磁路。\n\n 其特征在于，设置有用于将构成第一磁路和第二磁路的永磁体冷却至室温以下的冷却机构。\n\n  【0007】将说明具有这种配置的插入光源的功能和效果。 为了形成周期性磁场，\n\n 第一磁路和第二磁路被布置为彼此面对并且在它们之间具有间隔。 第一磁路由第一支撑件支撑，第二磁路由第二支撑件支撑。 第一磁路和第二磁路均被真空密封在真空室中。 通过使电子束穿过形成周期磁场的空间，可以产生同步辐射。 第一磁路和第二磁路均由永磁体构成，并且具有用于将永磁体冷却至室温或更低温度的冷却机构。 与在室温下使用时相比，通过冷却永磁体，可以减少剩磁通密度（Br）和矫顽力（以iHc表示），以及IH曲线（退磁曲线）与H轴交叉的点处的H大小。 它具有增加固有矫顽力的特性。 通过增加剩余磁通密度，改善了磁特性，并且可以在空间中形成强磁场。 还已知通过增加矫顽力来改善抗辐射特性。 结果，当第一磁路和第二磁路跨过空间布置成彼此面对时，可以增强在空间中形成的磁场，并且可以提供具有改善的抗辐射性的插入光源。 它可以。\n\n  【0008】通常，在烘烤过程中，不应将永磁体加热到指定温度以上。\n\n 磁回路通过循环约°c的热水和室温下的冷却水进行冷却，因此磁回路的温度不会因使用时电子束力产生的热量而变得不稳定。\n\n  【0009】此外，作为本发明的插入光源，用于改变空间部分的空间的空间改变机构，\n\n 设置在冷却机构中的用于使冷却介质通过的冷却介质通过管，\n\n 该制冷剂通道管设置有连接第一支撑体和第二支撑体的连接部，该连接部具有挠性并且被构造成允许由间隔改变机构改变间隔。 我喜欢。\n\n  【0010】通过提供空间改变机构使得可以改变空间的空间，还可以调节磁场的强度。 另外，当并入磁路时，可以容易地组装。 作为冷却机构，设置有使制冷剂通过的制冷剂通过管，该制冷剂通过管通过连接部与第一支撑体和第二支撑体连接。 因此，可以通过连接部分冷却由每个支撑件支撑的磁路。 另外，由于连接部是挠性的，因此能够在固定制冷剂通过管的同时改变空间间隔。\n\n （即使移动了第一和第二支撑），也可以轻松移动它们。\n\n  【0011】根据本发明的另一种冷却机构被设置用于冷却第一磁路，并且包括用于使制冷剂通过的第一制冷剂通过管，\n\n 用于冷却第二磁路并使制冷剂通过的第二制冷剂通过管，\n\n 优选地，第一制冷剂通过管固定地支撑在第一支撑件上，第二制冷剂通过管固定地支撑在第二支撑件上。\n\n  【0012】在这种情况下，第一制冷剂通道管由第一支撑件固定地支撑，而第二制冷剂通道管由第二支撑件固定地支撑。 结果，由每个支撑件支撑的磁路被冷却。 根据该结构，在使第一支架和第二支架移动时，固定于各支架的制冷剂通过管也移动，因此不需要挠性的连接部。 也不错。\n\n  【0013】根据本发明的又一冷却机构被提供用于冷却第一磁路，并且包括用于使冷却介质通过的第一制冷剂通过管，\n\n 用于冷却第二磁路并使制冷剂通过的第二制冷剂通过管，\n\n 优选地，第一制冷剂通道管构造成穿透第一支撑体的内部，第二制冷剂通道管构造成穿透第二支撑体U，的内部。\n\n  【0014】通过使冷却液通过支架内部，可以有效地冷却磁路。\n\n  【0015】根据本发明，用于改变空间间隔的空间改变机构，\n\n 设置在冷却机构中并由冰箱冷却的冷却头，\n\n 冷却头设置有连接第一支撑体和第二支撑体的连接部，该连接部具有挠性并且被构造成允许由间隔改变机构改变间隔。 我喜欢这样做。\n\n  【0016】尽管以上已经描述了通过设置制冷剂通过管来配置冷却机构的示例，但是可以考虑使用冰箱的配置。 在这种情况下，冰箱的冷却头可以经由连接部连接到第一支撑体和第二支撑体。 在这种情况下，连接是灵活的\n\n 由于具有，因此在更改空间间隔时可以很容易地遵循它。\n\n  【0017】在本发明中，可以在支撑第一支撑体的第一支撑轴和支撑第二支撑体的第二支撑轴的每一个中形成中空部分！ 我喜欢。\n\n  【0018】当设置用于冷却磁路的冷却机构时，必须抑制来自插入光源外部的热传导。 支撑第一支撑体和第二支撑体的支撑轴需要强度，因此由金属制成，但是金属具有良好的导热性，因此容易传递来自外部的热量。 通过在中空部形成支撑轴，可以使热量难以传递。 因此，可以将磁路设定为期望的冷却温度。\n\n  【0019】在本发明中，第一温度传感器用于检测第一磁路的温度，\n\n 能够加热第一磁路的第一加热器，\n\n 第二温度传感器，用于检测第二磁路的温度；\n\n 能够加热第二磁路的第二加热器，\n\n 优选的是，第一温度传感器和第二温度传感器设置有温度控制单元，该温度控制单元基于温度测量数据来控制第一加热器和第二加热器。\n\n  【0020】在冷却永磁体时，剩余磁通密度随着温度降低而增加，还有一种永磁体具有如下特征：当温度降低到一定温度以下时，剩余磁通密度反而减小。  .. 因此，当使用永磁体构造磁路时，必须控制冷却温度。 因此，通过提供可以加热每个磁路的加热器，检测每个磁路的温度的温度传感器以及控制每个加热器的温度控制单元，可以控制到适当的冷却温度。 您可以 \n\n在本发明中，第一支撑件和第二支撑件中的每一个均具有固定有永磁体的支架的一部分和支撑该支架部分的支架支撑部分。\n\n 优选地，保持器部分的材料的热膨胀系数大于或等于保持器支撑部分的材料的热膨胀系数。\n\n  【0022】相对于保持器部分组装永磁体的工作在室温下进行，并且在实际操作插入光源时，将其冷却至期望的冷却温度。 在这种情况下，如果保持器支撑部分的材料的热膨胀系数大于保持器部分的热膨胀系数，则由于冷却时热膨胀系数的差异，保持器部分变形并且磁路损坏。 因此，支架部分和支架\n\n 如果一个支撑部件由相同的材料制成（热膨胀系数等），或者该支撑部件的热膨胀系数大于该支撑部件的支撑系数，则该支撑部件将因热膨胀系数的差异而变形。 不需要发生。\n\n 附图的简要说明\n\n  【0023】[图1]根据第一实施例的插入光源的纵向截面图。\n\n [图2]示出了磁路的配置的图\n\n [图3]示出了磁路的另一种配置的图。\n\n [图4]显示温度控制控制块的图\n\n [图5]示出磁体特性的曲线图\n\n 图6是根据第二实施例的插入光源的垂直截面图。\n\n 图7是根据第三实施例的插入光源的垂直截面图。\n\n 图8是根据第四实施例的插入光源的垂直截面图。\n\n 图9是根据第五实施例的插入光源的垂直截面图。\n\n 图10是根据第六实施例的插入光源的垂直截面图。\n\n 图11是根据第七实施例的插入光源的垂直截面图。\n\n 图12是根据第八实施例的插入光源的垂直截面图。\n\n 图13是根据第九实施例的插入光源的垂直截面图。\n\n 图14是示出永磁体的具体示例的图。\n\n 实施本发明的最佳模式\n\n  【0024】将参照附图描述根据本发明的插入光源的优选实施例。 图1是示出根据第一实施例的插入光源的垂直截面图的视图。 图2是示出磁路的配置的概念图。 图3是示出磁路的另一配置的概念图。\n\n  【0025】首先，将描述磁路。 图2示出了所谓的Halbach型磁路。 第一磁路11和第二磁路12之间布置有空间13。 第一磁路11具有作为一组的四个永磁体11a-1d，并且这些组中的大量沿着电子束的行进方向布置。 每个永磁体11a-1d的磁化方向由箭头表示。 第二磁路12还具有一组四个永磁体12a-12d，它们沿着电子束的行进方向排成一行。 因此，\n\n 磁场的周期由边缘表示，如图所示。 磁体的布置节距可以根据目的适当地改变。\n\n  【0026】空间13的间隙间隔由g表示。 该间隙g被构造成可通过间隙改变机构改变。 可以通过改变间隔来调节磁场强度。 通过如图2所示布置永磁体，可以在空间13中形成周期性磁场。 当电子束穿过该空间13时，电子束在周期性磁场的影响下弯曲。 电子束的弯曲表面M平行于第一和第二磁路的磁体的面对表面。 通过使电子束弯曲，可以产生期望的同步加速器辐射。\n\n  【0027】图2所示的磁路仅由永磁体构成，在图3所示的所谓的混合型的磁路中，在永磁体之间配置有软磁性材料。 是位置。 即，在第一磁路中，永磁体11A，11C与软磁性体11B，11D相交。\n\n 永磁体12A和12C以及软磁体12B和12D交替地布置在第二磁路中。 磁化方向（磁通方向）如箭头所示。 根据本发明的插入光源不限于具有特定构造的磁路，无论采用哪种磁路。\n\n  【0028】\n\n 接下来，将描述根据第一实施例的插入光源的配置。 图1是沿着垂直于电子束的行进方向的平面截取的垂直截面图。 第一磁路11和第二磁路12被布置为彼此面对，在它们之间具有空间13。 如参考图2所述，第一磁路11具有在电子束的行进方向（垂直于图1的纸面的方向）上并排布置的大量永磁体m。 类似地，在第二磁路12中，许多永磁体m并排布置。 稍后将描述优选的永磁体m的具体示例。\n\n  【0029】第一支撑体21被设置用于安装和支撑第一磁路11。第一支撑体21包括第一磁体保持器21a（对应于保持器部分）和第一磁体安装体。 梁21b（对应于支架支撑）。 传统上，使用烘烤工艺来升高温度。\n\n 因此，第一磁铁支架21a由无氧铜构成，第一第一磁铁安装梁21b由铝构成，在本发明中，两者均由无氧铜构成。 如后面将描述​​的，当冷却磁路11和12时，磁体支架21a和磁体安装梁21b由相同的材料制成，从而磁体支架21a不会由于尺寸变化而变形。 因此，即使磁路11和12被冷却，也不会发生诸如永磁体m的变形和损坏的事故。\n\n  【0030】第一磁体支架21a可以由铝制成，并且第一磁体安装梁21b可以由非氧铜制成。 同样在这种情况下，由于铝的热膨胀系数大于无氧铜的热膨胀系数，因此即使将其冷却，在磁路11和12损坏的方向上也不会发生变形。\n\n  【0031】用于安装和支撑第二磁路12的第二支撑件22，第二磁体保持器22a和第二磁体安装梁22b与第一磁路11中的相同。\n\n  【0032】接下来，将描述用于冷却磁路11和12的冷却机构的构造。\n\n 作为冷却机构，设置有使制冷剂通过的制冷剂通过管30，在空间13的左右两侧设有一对制冷剂通过管30。 制冷剂不限于特定的制冷剂，而是诸如液态氮或液态氦的液态制冷剂是优选的。 冷却介质通过管30也沿着电子束的行进方向配置。 制冷剂具有通过预定的循环路径循环的结构。\n\n  【0033】制冷剂通过管30与第一和第二支撑件21、22经由连接部31连接。\n\n 连接部31形成为挠性形状（如图所示可折叠成手风琴型的结构），并且即使第一和第二支撑件21和22在竖直方向上移动，每个支撑件21  ，22和制冷剂通道管30可以保持在连接状态。 连接部分31由具有良好导热性的导体（例如，铜（无氧铜或铍铜），铝）形成。 制冷剂通过管30处于固定状态。\n\n  【0034】连接部31具有挠性的原因是上述的力，并且还具有赋予一定的耐热性的目的。 通过提供热阻，可以精确地执行稍后描述的温度控制。\n\n  【0035】当通过冷却机构冷却磁路11和12时，温度低于室温并且存在液氮。\n\n 或设置为温度高于液氦温度。 设定温度根据所使用的制冷剂的种类和构成磁路11、12的永久磁铁m的种类而变化。\n\n  接下来，将描述通过冷却永磁体m产生的效果。 作为永磁体的一般特征，剩余磁通密度Br随着冷却而增加。 结果，可以在空间13中形成强磁场。 而且，通过冷却永磁体来增加矫顽力。 结果，提高了抗辐射特性。 而且，通过冷却永磁体，减小了真空室1中永磁体的表面力和气体分子的解吸。 因此，即使不对磁路11和12进行烘烤处理，也可以将真空室1的内部设定为超高真空。 当执行烘烤过程时，必须将其加热到预定温度，但是加热永磁体会引起热退磁的问题。 因此，与过去一样，考虑到烘烤过程中的热退磁，必须选择在室温下具有高矫顽力和低剩余磁通密度的材料。 然而，在本发明的情况下，由于在不考虑这种热退磁的情况下为良好的V，因此可以选择在室温下具有低矫顽力和高剩余磁通密度的材料。 可以形成强磁场。\n\n  【0037】第一和第二磁路11和12在真空室1中被真空密封。 通过将磁路11和12密封在真空室1中，可以减小间隙距离g。 此外，由于真空密封具有绝热作用，因此可以将安装有插入光源R的房间中的热量通过空罐1传递到磁路11和12。\n\n  【0038】通过间隙改变机构（未图示）使支撑第一磁路11和第二磁路12的第一支撑件21和第二支撑件22沿上下方向（图1中的箭头A和B）移动。 可以移动。 作为间隔改变机构，例如，可以使用上述专利文献1或非专利文献1中公开的机构。 间隙改变机构可以改变空间13的间隙距离g。 通过改变间隙距离g，可以根据需要调节空间13中的磁场强度。\n\n  【0039】第一支撑件21的上部由第一支撑轴14支撑。 第一支撑轴14由金属制成，但是具有中空的内部。 由于第一支撑轴14的大部分在真空腔室1的外部，所以室内（真空腔室外部）的热量传递到第一支撑轴14，并在使第一磁路11的温度上升的方向上起作用。 去做。 为了尽可能地抑制这种情况，第一支撑轴\n\n 通过使14成为空心来传递热量。 第二支撑件22的下部也由第二支撑轴15支撑，但是由于相同的原因，内部形成为中空的。 结果，确保了支撑轴14和15的强度并且降低了热导率。 在每个支撑轴14和15的周围设置有波纹管16，以允许每个支撑轴14和15的竖直运动，同时保持真空室1内的真空。 \n\n【0040】由于将插入光源放置在室温下的室内，因此必须尽可能避免红外线辐射热。 磁路11和12被真空室1真空绝缘，但是磁路11和12可能无法通过辐射热充分冷却。 因此，需要用于反射热量的机制。 例如，优选的是，支撑件21和22的磁体保持件21a和22a以及磁体安装梁21b和22b的表面镀有金等以反射辐射热。\n\n  【0041】第一支撑件21在第一磁体安装梁21b的后侧上设置有第一加热器21c。 类似地，第二支撑件22也设置有第二加热器22c。 另外，温度传感器21d和22d嵌入在第一和第二磁体安装梁21b和22b（图1中未示出）中。 图4是示出温度控制单元23的配置的控制框图。 在温度设定单元24中设定用于冷却永磁体的温度数据。 温度控制单元23将从每个温度传感器2d，22d测量的温度数据与设置的温度数据进行比较，并且分别设置每个加热器21c，22c以获得期望的温度。 控制。\n\n  【0042】作为加热器，例如，可以使用护套加热器。 加热器21c和22c可以通过用铜板等按压背面的磁体安装梁21b和22b并用螺钉固定来安装。 作为温度传感器，可以使用使用铂或热电偶的测温电阻抗体。\n\n  【0043】温度控制单元23并不总是必需的，但是优选在以下情况下设置温度控制单元23。 关于永磁体的特性，如果磁性特性随温度降低而增加没有问题，但是如图5所示，也存在在一定低温下具有峰值剩余磁通密度的永磁体材料。 去做。 例如，如果稀土-铁-铁硼磁体在低于TSR（自旋重排温度）的温度下引起自旋重排，\n\n 必须控制磁路11和12的温度，以使它们不会被冷却到该温度。\n\n  【0044】\n\n 接下来，将参照图6描述根据第二实施例的插入光源。 具有与第一实施例中的功能相同的功能的部件由相同的附图标记表示，并且将省略其描述。\n\n  在第二实施方式中，设置有第一制冷剂通过管30A和第二制冷剂通过管30B，左右分别设置有第一制冷剂通过管30A，并且经由连接部31A分别设置有第一制冷剂通过管30A和第一制冷剂通过管30A。 与此相连的是一个支撑21。 类似地，第二制冷剂通过管30B也经由连接部31B连接至第二支撑件22。 每个连接部分31A，31B具有柔性。 结果，制冷剂通过管30A和30B被固定地附接到真空室1，但是即使第一和第二支撑件21和22在竖直方向上移动，每个支撑件21， 因此，如图22所示，能够维持制冷剂通过管30A，30B之间的连接状态。\n\n  【0046】\n\n 接下来，将参照图6描述根据第三实施例的插入光源。 与第二实施方式的不同之处在于，第一制冷剂通道管30A和第二制冷剂通道管30B分别经由固定装置32A和32B被第一支撑体21和第二支撑体22固定地支撑。 在那儿。 固定装置32A，32B由金属（例如，铜板（铍铜等），不锈钢板，铝板）形成。 当第一支撑件21和第二支撑件22上下运动时，第一制冷剂通道管30A和第二制冷剂通道管30B也一起运动。 因此，不使用灵活的连接。 当固定装置32A和32B需要具有耐热性时，优选地形成不锈钢板。\n\n  【0047】\n\n 接下来，将参照图6描述根据第四实施例的插入光源。 与第三实施例的不同之处在于，第一制冷剂通道管30A和第二制冷剂通道管30B直接固定到第一支撑件21和第二支撑件22的侧表面部分。 没有提供第三实施例中所示的固定装置。 此外，类似于第三实施例，当第一支撑件21和第二支撑件22上下移动时，第一制冷剂通道管30A和第二制冷剂通道管30B也一起上下运动。  .. 因此，不使用挠性连接部。 由于制冷剂通过管30A和30B直接附接到支撑件21和22，因此有效地进行了冷却。\n\n 可以执行。 此外，尽管在第四实施例中没有设置加热器，但是可以通过改变制冷剂的温度来控制温度。 下一个第五实施例也是如此。\n\n  【0048】\n\n 接下来，将参照图6描述根据第五实施例的插入光源。 在本实施方式中，第一制冷剂通过管30A被埋设在第一支架21的第一磁铁安装梁21b的内部。 第2制冷剂通过管30B同样埋设在第32磁铁安装梁22b的内部。 当第一支撑件21和第二支撑件22上下运动时，第一制冷剂通道管30A和第二制冷剂通道管30B也一起运动。 由于冷却剂通过管30A和30B被嵌入支撑件21和22中，因此可以有效地进行冷却。\n\n  【0049】\n\n 接下来，将参照图6描述根据第六实施例的插入光源。 参照图10和以下实施例，将描述使用冰箱33的冷却机构。 如图10所示，在真空室1的左右两侧配置有一对制冷机33，其冷却头330暴露于真空室1的内部。 冷却头330的上端通过第一连接部31A连接至第一支撑件21。 冷却头330的下端侧通过第二连接部31B连接至第二支撑件22。 冰箱33可以基于绝热膨胀的原理来冷却每个磁路11、12。 连接部分31A和31B具有与第一实施例相同的柔性。 结果，即使第一和第二支撑件21、22在竖直方向上移动，也可以维持各个支撑件21、22与冷却头330之间的连接。\n\n  【0050】\n\n 接下来，将参照图11描述根据第七实施例的插入光源。 在本实施方式中，设置有一对第一冰箱33A和一对第二冰箱33B。 第一冰箱33A的第一冷却头330A通过第一连接部分31A连接到第一支撑件21，第二冰箱33B的第二冷却头330B通过第二连接部分31B连接。 连接到第二支架22。 每个连接部33A和33B具有挠性，并且即使第一和第二支撑体21、22在竖直方向上移动，也保持各个支撑体21、22和冷却头330之间的连接状态。 我正在尝试做。\n\n  【0051】\n\n 接下来，将参考图8描述根据第八实施例的插入光源。 如图12所示，第一冰箱33A被放置在真空室1的上方，并且形成为大致L形的冷却头330A的尖端暴露于真空室1的内部。 在第一支撑体21的第一磁体安装梁21b的背面侧，其经由连接部34A与冷却头330A连接。 与其他实施方式不同，第一加热器21c设置在第一磁体安装梁21b的中央凹部中。 第二冷藏库/冷冻库33B配置在真空室1的下方，其他的冷却头330B，连接部34B，第二加热器22c等同样地配置。 每个连接部分34A，34B是柔性的，并且即使第一和第二支撑件21、22在竖直方向上移动，也减小了各个支撑件21、22与冷却头330A，330B之间的连接。 确保维持连接。\n\n  【0052】\n\n 接下来，将参照图9描述根据第九实施例的插入光源。 冰箱33A和33B的布置与第八实施例的相同，但是冷却头330A和330B的末端直接固定到第一和第二磁体安装梁21b和22b。 因此，当第一支撑件21和第二支撑件22上下移动时，第一冰箱33A和第二冰箱33B与它们一起上下移动。 在冷却头330A和330B周围设置有波纹管35，以允许冷却头330A和330B上下移动，同时保持真空室1内的真空。\n\n  【0053】在第九实施例中，可以通过在冷却头330A和330B中并入加热器来控制温度。\n\n  【0054】\n\n 图14示出了适用于形成根据本发明的插入光源的磁路11和12的永磁体的具体示例。 在图14中，数字1至15是Nd-Fe-B系统的永磁体，其表现出自旋重排，因此Br（残留磁通密度）在极低的温度下降低。  6号是Pr-Fe-B系统永磁体，没有自旋重排。 霍尔元件用于测量磁场。  RT是室温，LNT是液氮温度（77K），LHeT是液氦温度（4.2K）。\n\n  【0055】图3中说明的无噪音型力对于这种类型的软磁性材料，\n\n 可以使用Permendur，Ho（hol），Dy（dy），纯铁等。 每个实施例中的磁路可以是哈尔巴赫型或混合型。\n\n  【0056】\n\n 如上所述，根据本发明的插入光源具有以下效果。 通过利用冷却机构进行冷却，残余磁通密度（Br）升高，并且可以在空间中形成比室温下使用的磁场强的磁场。 此外，固有矫顽力（iHc）通过冷却而增加，并且抗辐射性也相应地增加。 由于冷却机构会冷却磁路，支架和支架支撑，因此在抽至超高真空时无需烘烤。 因此，可以使用不需要考虑由于烘烤引起的热退磁的高度工程化的永久能量永磁体。 \n\n【0057】过去，为了通过对真空室内的永磁体的表面力进行除气来提高极限真空，即使在烘烤过程中加热到100°C左右，永磁体也会散发热量。 为了防止磁性，必须选择具有高iHc的材料。 高iHc材料在互补关系中也具有低Br，从而由磁路形成的磁通密度低。\n\n  另一方面，在本发明中，通过冷却永磁体将气体分子捕获在磁体的表面上。 您可以 即，由于磁体没有被加热，因此必须选择高iHc材料以防止退磁。\n\n 也不错。 因此，可以选择高Br材料，并且由于Br在低温下升高，所以可以获得更高的磁通密度。\n\n  【0059】\n\n 各个实施例中公开的结构可以在合理范围内任意组合。');
INSERT INTO `os_patent_instruction_text` VALUES (13046, 22875, '【技術分野】\n\n【0001】\n\n本発明は、R-Fe-B系希土類焼結磁石およびその製造方法に関する。\n\n【背景技術】\n\n【0002】\n\n希土類合金の焼結磁石(永久磁石)は、一般に、希土類合金の粉末の成形体を焼結し、必要に応じて時効処理することによって製造される。\n\n【0003】\n\n現在、サマリウム·コバルト系磁石と、ネオジム·鉄·ボロン系磁石の二種類が各分野で広く用いられている。なかでも、ネオジム·鉄·ボロン系磁石(以下、「R-Fe-B系磁石」と称する。RはYを含む希土類元素、Feは鉄、Bはボロンである。)は、種々の磁石の中で最も高い最大磁気エネルギー積を示し、価格も比較的安いため、各種電子機器へ積極的に採用されている。\n\n【0004】\n\nR-Fe-B系焼結磁石は、主にR2Fe14Bの正方晶化合物からなる主相、Nd等からなるRリッチ相、およびBリッチ相から構成されている。なお、Feの一部がCoやNiなどの遷移金属と置換されてもよく、Bの一部がCで置換されてもよい。本発明が好適に適用されるR-Fe-B系焼結磁石は、例えば、米国特許第4,770,723号および米国特許第4,792,368号の明細書に記載されている。\n\n【0005】\n\nこのような磁石となるR-Fe-B系合金を作製するために、従来は、インゴット鋳造法が用いられてきた。一般的なインゴット鋳造法によると、出発原料である希土類金属、電解鉄およびフェロボロン合金を高周波溶解し、得られた溶湯を鋳型内で比較的ゆっくりと冷却することによって合金インゴットが作製される。\n\n【0006】\n\n近年、合金の溶湯を単ロール、双ロール、回転ディスク、または回転円筒鋳型の内面などと接触させることによって、比較的速く冷却し、合金溶湯から、インゴットよりも薄い\n\n凝固合金(「合金フレーク」と称することにする。)を作製するストリップキャスト法や遠心鋳造法に代表される急冷法が注目されている。このような急冷法によって作製された合金片の厚さは、一般に、約0.03mm以上約10mm以下の範囲にある。急冷法によると、合金溶湯は冷却ロールに接触した面(ロール接触面)から凝固し始め、ロール接触面から厚さ方向に結晶が柱状に成長してゆく。その結果、ストリップキャスト法などによって作製された急冷合金は、短軸方向のサイズが約0.1μm以上約100μm以下で、長軸方向のサイズが約5μm以上約500μm以下のR2Fe14B結晶相と、R2Fe14B結晶相の粒界に分散して存在するRリッチ相とを含有する組織を持つにいたる。Rリッチ相は希土類元素Rの濃度が比較的高い非磁性相である。\n\n【0007】\n\n急冷合金は、従来のインゴット鋳造法(金型鋳造法)によって作製された合金(インゴット合金)に比較して相対的に短い時間(冷却速度:102℃/秒以上、104℃/秒以下)で冷却されているため、組織が微細化され、結晶粒径が小さいという特徴を有している。また、粒界の面積が広く、Rリッチ相は粒界内に広く広がっているため、Rリッチ相の分散性にも優れるという利点がある。これらの特徴が故に、急冷合金を用いることによって、優れた磁気特性を有する磁石を製造することができる。\n\n【0008】\n\nなお、本明細書においては、固体合金の塊を「合金塊」と呼び、従来のインゴット鋳造法によって得られる合金インゴットおよびストリップキャスト法などの急冷法によって得られる合金フレークなどの溶湯を冷却して得られた凝固合金を含むものとする。\n\n【0009】\n\nこれらの合金塊を粉砕することによって得られる微粉末を用いて成形体が作製される。成形体の作製に供される微粉末は、例えば水素化粉砕法および/または種々の機械的粉砕法(例えば、ボールミルやアトライターが用いられる)で粉砕し、得られた粗粉末(例えば、平均粒径10μm〜500μm)を例えばジェットミルを用いた乾式粉砕法で微粉砕することによって得られる。微粉末の平均粒径は、磁気特性の観点から、1.5μm〜7μmの範囲内にあることが好ましい。なお、粉末の「平均粒径」は、特にことわらない限り、ここでは、FSSS(Fisher Sub-Sieve Sizer)粒径を指すことにする。\n\n【0010】\n\n成形体の作製には、一軸プレス成形法が広く用いられている。特に、最大磁気エネルギー積の高い焼結磁石(異常性焼結磁石)を作製する場合には、圧縮工程において配向磁界が印加される。このときの結晶粒の配向度が高いほど、最大磁気エネルギー積は大きくなる。また、配向度が高いと横方向(配向磁界に直交する方向)のBrが小さく、偏磁が少ないという効果が得られる。\n\n【0011】\n\nそこで、配向度を高める方法として、従来は、一軸プレス成形工程において印加する配向磁界として、強度が大きいパルス磁界を印加する方法が採用されていた。しかしながら、強いパルス磁界を印加するためには、磁気回路が大型化する。また、配向磁界の印加に伴い渦電流によりダイス(金型)が発熱する(例えば60℃以上に達する)ので、ダイスを冷却する必要が生じ、連続成形することができなくなる。\n\n【0012】\n\nなお、CIP法やRIP法などの等方圧縮成形法を用いれば、一軸プレス成形法よりも高い配向度を有する成形体を得ることができるが、CIP法やRIP法によって得られる成形体は、寸法精度が低いので(典型的には成形体の中央部が膨らむので)、所望の外形を有する焼結磁石を得るためには、焼結体を加工する必要が生じ、生産効率および材料の歩留まりが低いという問題がある。\n\n【特許文献1】特開平6-96928号公報\n\n【発明の開示】\n\n【発明が解決しようとする課題】\n\n【0013】\n\n本発明は、上記諸点に鑑みてなされたものであり、プレス成形を用いても従来よりも高い配向度の焼結磁石を得ることができる、R-Fe-B系希土類焼結磁石の製造方法を提供することを目的とする。\n\n【課題を解決するための手段】\n\n【0014】\n\n本発明の希土類焼結磁石の製造方法は、R-Fe-B系の希土類焼結磁石の製造方法であって、11原子%以上18原子%以下の軽希土類元素LR(La、Ce、Pr、Nd、Pm、Sm、EuおよびGdからなる群から選択される少なくとも1種の希土類元素であり、NdおよびPrの少なくとも1種を含む)と、4原子%以上12原子%以下の元素A(ボロンまたはボロンと炭素との混合物)とを含み、残部がFeまたはFeと他の遷移金属との混合物である元素T、微量添加元素Mおよび不可避不純物である組成を有し、D99(累積体積分率が99%となる粒径)が12μm以下である第1合金微粉末を用意する工程と、10原子%以上35原子%以下の重希土類元素HR(Y、Tb、Dy、Ho、Er、Tm、Yb、Luからなる群から選択される少なくとも1種の希土類元素)と、0原子%以上10原子%以下の元素A(ボロンまたはボロンと炭素との混合物)とを含み、残部がFeまたはFeと他の遷移金属との混合物である元素T、微量添加元素Mおよび不可避不純物である組成を有し、D99(累積体積分率が99%となる粒径)が12μm以下である第2合金微粉末を用意する工程と、前記第1合金微粉末と前記第2合金微粉末とを混合し、混合粉末を用意する工程と、配向磁界として反転磁界を印加しながら前記混合粉末を圧縮成形することによって成形体を得る工程と、前記成形体を焼結することによって焼結体を得る工程とを包含することを特徴とする。焼結温度は、例えば1000℃以上1140℃以下の範囲内であり、焼結時間は、例えば1時間以上8時間以下の範囲である。\n\n【0015】\n\nある実施形態において、前記混合粉末は、1質量%以上50質量%の前記第2合金微粉末を含む。\n\n【0016】\n\nある実施形態において、前記第1および第2合金微粉末の平均粒径が2.0μm以上5.0μm以下である。\n\n【0017】\n\nある実施形態において、前記焼結工程において、主相の平均結晶粒径が8μm以上40μm以下の範囲となるまで結晶粒成長が行われる。\n\n【0018】\n\nある実施形態において、前記反転磁界の強度は2.5T以下である。前記反転磁界の強度は1.0T以上であることが好ましい。\n\n【0019】\n\nある実施形態において、前記第2合金微粉末の前記重希土類元素HRはDyおよびTbの内から選ばれる少なくとも1種の元素を含む。\n\n【0020】\n\nある実施形態において、前記成形体を作製する工程は、一軸プレス成形法を用いて行われる。\n\n【0021】\n\n本発明の希土類焼結磁石は、上記のいずれかの製造方法によって製造されたことを特徴とする。\n\n【0022】\n\nある実施形態において、配向磁界方向の残留磁束密度をBrx、配向磁界方向に直交する2つの方向の残留磁束密度をBryおよびBrzとして、Bs’=(Brx2+Bry2+Brz2)1/2に対するBrxの比(=Brx/Bs’)を配向度パラメータPと定義するとき、配向度パラメータPの値が0.990超である。\n\n【発明の効果】\n\n【0023】\n\n本発明によると、一軸プレス成形を用いても従来よりも高い配向度を有するR-Fe-B系希土類焼結磁石を製造することができる。\n\n【発明を実施するための最良の形態】\n\n【0024】\n\n以下、図面を参照しながら、本発明による実施形態のR-Fe-B系希土類焼結磁石の製造方法を説明する。\n\n【0025】\n\n本発明による実施形態のR-Fe-B系希土類焼結磁石の製造方法は、希土類元素として、Ndに代表される軽希土類元素LRに加えて、Dyに代表される重希土類元素HRを用いる。また、軽希土類元素LRを含む第1合金と、それとは別に重希土類元素HRを含む第2合金とを用意し、それぞれ微粉末(第1合金微粉末および第2合金微粉末)としてから混合し、得られた混合粉を用いて成形体を作製する(「ブレンド法」と呼ぶことがある。)。このとき、第1合金微粉末および第2合金微粉末は、いずれも、FSSSによって求められる微粉末の粒度分布におけるD99(累積体積分率が99%となる粒径)が12μm以下である。\n\n【0026】\n\nここで、第1合金は、11原子%以上18原子%以下の軽希土類元素LR(La、Ce、Pr、Nd、Pm、Sm、EuおよびGdからなる群から選択される少なくとも1種の希土類元素であり、NdおよびPrの少なくとも1種を含む)と、4原子%以上12原子%以下の元素A(ボロンまたはボロンと炭素との混合物)とを含み、残部がFeまたはFeと他の遷移金属との混合物である元素T、微量添加元素Mおよび不可避不純物である組成を有する。\n\n【0027】\n\n一方、第2合金は、10原子%以上35原子%以下の重希土類元素HR(Y、Tb、Dy、Ho、Er、Tm、Yb、Luからなる群から選択される少なくとも1種の希土類元素)と、0原子%以上10原子%以下の元素A(ボロンまたはボロンと炭素との混合物)とを含み、残部がFeまたはFeと他の遷移金属との混合物である元素T、微量添加元素Mおよび不可避不純物である組成を有する。\n\n【0028】\n\nなお、遷移金属元素はTi、V、Cr、Mn、Fe、Co、Niなどであり、元素Tは、Fe、またはFeの一部がNiおよびCoの少なくとも一方で置換されたものが好ましい。また、微量添加元素Mは、Al、Cu、Ga、Cr、Mo、V、NbおよびMnの少なくとも1種であることが好ましく、その含有率は5原子%以下であることが好ましい。\n\n【0029】\n\n第1合金微粉末と第2合金微粉末との混合粉末は、1質量%以上50質量%の第2合金微粉末を含むことが好ましい。上記範囲よりも第2合金微粉末の量が少ないと、後述する本発明の効果が得られないことがあり、一方、上記範囲よりも第1合金微粉末の量が少ないと、第1合金微粉末に含まれている主相であるR2Fe14B型結晶相が減少し、残留磁束密度Brが低下するという問題が生じることがある。\n\n【0030】\n\nまた、最終的に得られる混合粉あるいは焼結体における希土類元素中の重希土類元素の比率は0.1原子%以上10原子%以下の範囲内にあることが好ましい。上記範囲よりも重希土類元素の比率が低いと、後述する本発明の効果が得られないことがあり、一方、上記範囲よりも重希土類元素の比率が高いと、残留磁束密度Brなどの磁気特性が低下するという問題が生じることがある。\n\n【0031】\n\nなお、第1および第2合金微粉末は、上述した公知の方法で調製される。但し、磁気特性の観点からは、ストリップキャスト法に代表される急冷法によって作製された合金フレークを用いることが好ましい(例えば、米国特許第5、666、635号明細書を参照)。また、最終的に成形体の作製に供される混合粉末の表面に、必要に応じて、酸化の抑制\n\nおよび/または流動性や成形性を改善するために潤滑剤を付与することが好ましい。\n\n【0032】\n\n混合粉末の成形体を得るための圧縮成形工程は、配向磁界として反転磁界を印加しながら行われる。配向磁界として反転磁界を印加することによって、従来よりも高い配向度を得ることができる。また、反転磁界を印加することによって得られるこの効果は、2.5T以下の磁界強度で得られ、パルス磁界を印加する必要はなく、静的な交番反転磁界を印加すればよい。従って、反転磁界を印加することによるダイスの温度上昇は起こらない。なお、反転磁界の強度が1.0Tを下回ると、上述の効果が得られないことがある。\n\n【0033】\n\n混合粉末の圧縮成形は、生産性の観点から、一軸プレス成形法を用いて行うことが好ましい。一軸プレス成形は、例えば、電動プレスを用い、0.2ton/cm2〜2.0ton/cm2(1.96×104kPa〜1.96×105kPa)の圧力で行なわれる。\n\n【0034】\n\n上記成形体を焼結すると、焼結過程において、重希土類元素HRと軽希土類元素LRとの相互拡散が起こり、希土類元素として軽希土類HRを主に含む主相(R-Fe-B結晶相)の周辺に重希土類元素HRが導入される。このような組織を有するので、主相の全体にわたって均一に重希土類元素HRが分布する組織に比べて、室温における保磁力の低下が抑制される。\n\n【0035】\n\nまた、後に実験例を示すように、重希土類度元素HRを含む第2合金微粉末を混合した場合に、焼結過程において結晶粒(主相)の成長(粗大化)が特異的に起こる。このことから、配向度を低下させる原因となる微細な結晶粒の数が減少することが、配向度の上昇に寄与していると考えられる。\n\n【0036】\n\nこのような効果を得るためには、第1合金微粉末および第2合金微粉末の平均粒径はともに2.0μm以上5.0μm以下であることが好ましい。この範囲よりも小さいと粉末が酸化されやすく取り扱い難くなり、逆に大きいと、 焼結時に緻密化しにくくなる、あるいは保磁力が低下するという問題が発生することがある。\n\n【0037】\n\nまた、焼結工程は、主相の平均結晶粒径が8μm以上40μm以下の範囲となるまで結晶粒を成長させることが好ましい。最終的な結晶粒の平均粒径が8μmよりも小さいと結晶粒の粗大化による配向度の向上効果が十分に得られないことがある。逆に、結晶粒の平均粒径が40μmを超えると、磁気特性(例えば残留磁束密度Br)が低下することがある。焼結条件は、例えば1000℃以上1140℃以下の範囲で、例えば1時間以上8時間以下の範囲である。結晶粒を上述の平均粒径まで成長させるように設定すればよい。焼結雰囲気は、例えば、減圧の不活性ガス雰囲気でよい。なお、焼結磁石における主相(結晶)の平均粒径は、組織写真に線分を引き、粒界との交点の数で線分の長さを割ることによって求められる(定方向径)。また、必要に応じて、得られた焼結体を、例えば約450℃〜約800℃の温度で、約1時間〜約8時間時効処理してもよい。\n\n【0038】\n\n本発明の実施形態の製造方法によると、配向磁界として反転磁界を印加することによる効果と、焼結過程における結晶粒の粗大化による効果とによって、配向度が向上する。これら2つの効果は、いずれも、重希土類元素HRを含む第2合金微粉末を混合した場合に特異的に得られる。重希土類元素HRと軽希土類元素LRとを含む単一の合金微粉末を用いた場合(「単合金法」ということがある。)にはこれらの効果は得られない。磁気特性および価格などの観点から、軽希土類元素LRとしては、NdまたはPrが好ましく、重希土類元素HRとしては、DyまたはTbが好ましい。\n\n【0039】\n\n上述の製造方法によると、成形体を作製する工程を一軸プレス成形法を用いて行っても十分に高い配向度が得られるので、製造効率を犠牲にすることなく、配向度を向上するこ\n\nとができる。もちろん、CIP法やRIP法を用いても配向度を向上する効果を得ることができる。\n\n【0040】\n\n以下に例示する実験例で示すように、配向度を定量的に評価するために、次のようにして定義される配向度パラメータPを導入した。\n\n【0041】\n\n得られた焼結磁石の成形体の配向磁界方向(x軸方向)の残留磁束密度をBrx、配向磁界方向に直交する2つの方向の残留磁束密度をBryおよびBrzとして、Bs’=(Brx2+Bry2+Brz2)1/2に対するBrxの比を配向度パラメータP(P=Brx/Bs’)と定義する。この配向度パラメータPは、実験的には、焼結体をx、yおよびz軸にそれぞれ直交する面から構成される立方体に加工し(例えば切り出し)、フラックスメータを用いて各方向における残留磁束密度Brを測定することによって求められる。例えば、プレス方向をz軸方向とし、x軸およびz軸に直交する方向をy軸方向する。\n\n【0042】\n\n現在、プレス成形法を用いて量産されているR-Fe-B系希土類焼結磁石(重希土類としてDyを含む)の配向度パラメータPの値は0.980以上0.990以下の範囲にあるのに対し、本発明による実施形態の製造方法で得られたR-Fe-B系希土類焼結磁石の配向度パラメータPの値は0.990を超える。\n\n【0043】\n\n特許文献1には、主相であるNd2Fe14B結晶相の表面近傍のNdの一部をDyおよび/またはTbで置換することによって、保磁力が向上するとともに、減磁が抑制されることが記載されている。しかし、本発明者が検討した結果、特許文献1に記載されている方法では、配向度パラメータP値が0.990を超える焼結磁石は得られなかった。\n\n【実施例】\n\n【0044】\n\n以下、本発明による希土類焼結磁石の製造方法について実施例を挙げて説明するが、本発明は以下の実施例によって何ら限定されるものではない。\n\n【0045】\n\n第1合金微粉末として、組成をLR(Nd):12.2原子%、B:7.5原子%、Co:1.2原子%、Al:0.6原子%、Cu:0.1原子%、残部:Feおよび不可避不純物とした合金微粉末を作製した。\n\n【0046】\n\n第2合金微粉末として、組成をHR(Dy):11.1原子%、LR(Nd):12.2原子%、残部:Feおよび不可避不純物とした合金微粉末(実施例用第2合金微粉末1)と、組成をHR(Dy)22.3原子%、残部:Feおよび不可避不純物とした合金微粉末(実施例用第2合金微粉末2)とを作製した。\n\n【0047】\n\nまた、比較のための単一合金微粉末として、組成をLR(Nd):12.1原子%、HR(Dy):2.0原子%、B:6.1原子%、Co:1.0原子%、Al:0.5原子%、Cu:0.1原子%、残部:Feおよび不可避不純物とした合金微粉末(比較例用合金微粉末1)と、組成をLR(Nd):9.9原子%、HR(Dy):4.0原子%、B:  原子%、Co:1.0原子%、Al:0.49原子%、Cu:0.1原子%、残部:Feおよび不可避不純物とした合金微粉末(比較例用合金微粉末2)とを作製した。\n\n【0048】\n\n上記の合金微粉末は、いずれも以下の方法で作製した。\n\n【0049】\n\nまず、それぞれの組成の合金フレークをストリップキャスト法で製造した。この合金フレークを水素化粉砕法によって粉砕することによって合金粗粉末を得た。この合金粗粉末をジェットミル装置を用いて窒素ガス雰囲気中で微粉砕することによって、D99が11μmで、平均粒径が4.0μmの合金粉末を得た。\n\n【0050】\n\n実施例用混合粉末1:上記第1合金微粉末と、実施例用第2合金微粉末1とを質量で、78:22の割合で混合し、ロッキングミキサーを用いて混合し、実施例用混合粉末1を得た。全希土類元素中のDyの含有率は5質量%(2.0原子%)である。\n\n【0051】\n\n実施例用混合粉末2:上記第1合金微粉末と、実施例用第2合金微粉末2とを質量で、78:22の割合で配合し、ロッキングミキサーを用いて混合し、実施例用混合粉末2を得た。全希土類元素中のDyの含有率は10質量%(4.0原子%)である。\n\n【0052】\n\n比較例用合金粉末1:上記比較例1用の単一合金微粉末を用いた。全希土類元素中のDyの含有率は5質量%(2.0原子%)である。\n\n【0053】\n\n比較例用合金粉末2:上記比較例2用の単一合金微粉末を用いた。全希土類元素中のDyの含有率は10質量%(4.0原子%)である。\n\n【0054】\n\n上記の混合粉末または単一合金微粉末に、液体潤滑剤を0.4質量%添加·混合した粉末材料をプレス工程に供した。\n\n【0055】\n\n上記の粉末材料を電動プレス装置を用いて配向磁界を印加しながら一軸プレス成形(プレス圧力0.8ton/cm2(7.84×104kPa)することによって、成形体(縦40mm×横30mm×高さ20mm)を得た。なお、配向磁界の方向はプレス方向に直交である。\n\n【0056】\n\nまた、実施例の焼結磁石を作製する場合、配向磁界として、1.7Tの交番反転磁界を印加した。また、比較のために、配向磁界として、1.7Tの静磁界を印加した。\n\n【0057】\n\n得られた成形体を1080℃で8時間、減圧Ar雰囲気中で焼結し、その後、500℃で1時間の時効処理を施した。\n\n【0058】\n\n得られた焼結体から、一辺が7mmの立方体を切り出し、フラックスメータを用いて立方体の各方向における残留磁束密度Brx、BryおよびBrzを測定した。なお、着磁磁界は、10Tとした。\n\n【0059】\n\n残留磁束密度Brx、BryおよびBrzから配向度パラメータP=Brx/Bs’の値を求めた。ここで、Bs’=(Brx2+Bry2+Brz2)1/2である。\n\n【0060】\n\nまた、得られた焼結磁石の断面をSEMおよびEPMAを用いて観察した。偏光顕微鏡写真から平均結晶粒径を求めた。\n\n【0061】\n\n図1(a)〜(d)に、Dyを5質量%含む希土類焼結磁石の偏光顕微鏡写真を示す。図1(a)は実施例用混合粉末1を用いて交番反転磁界を印加しながら作製した成形体から形成された焼結磁石(サンプルa)の断面偏光顕微鏡写真であり、図1(b)は実施例用混合粉末1を用いて静磁界を印加しながら作製した成形体から形成された焼結磁石(サンプルb)の偏光顕微鏡写真であり、図1(c)は比較例用合金粉末1を用いて交番反転磁界を印加しながら作製した成形体から形成された焼結磁石(サンプルc)の断面偏光顕微鏡写真であり、(d)は、比較例用合金粉末1を用いて静磁界を印加しながら作製した成形体から形成された焼結磁石(サンプルd)の断面偏光顕微鏡写真である。\n\n【0062】\n\n図1(a)および(b)と図1(c)および(d)とを比較すれば明らかなように、実施例用混合粉末を用いた焼結磁石(サンプルaおよびサンプルb)の結晶粒径は、比較例\n\n用合金粉(単一合金)を用いた焼結磁石(サンプルcおよびサンプルd)の結晶粒径に比べて大きい。偏光顕微鏡写真から求めた平均結晶粒径は、サンプルaは10.5μm、サンプルbは11.2μm、サンプルcは4.8μm、サンプルdは4.9μmであった。残留磁束密度Brxは、サンプルaが1.307T、サンプルbが1.302T、サンプルcが1.290Tおよびサンプルdが1.284Tであった。\n\n【0063】\n\n図2(a)〜(d)に、Dyを10質量%含む希土類焼結磁石の偏光顕微鏡写真を示す。図2(a)は実施例用混合粉末2を用いて交番反転磁界を印加しながら作製した成形体から形成された焼結磁石(サンプルe)の断面偏光顕微鏡写真であり、図2(b)は実施例用混合粉末2を用いて静磁界を印加しながら作製した成形体から形成された焼結磁石(サンプルf)の偏光顕微鏡写真であり、図2(c)は比較例用合金粉末2を用いて交番反転磁界を印加しながら作製した成形体から形成された焼結磁石(サンプルg)の断面偏光顕微鏡写真であり、図2(d)は比較例用合金粉末2を用いて静磁界を印加しながら作製した成形体から形成された焼結磁石(サンプルh)の断面偏光顕微鏡写真である。\n\n【0064】\n\n図2(a)および(b)と図2(c)および(d)とを比較すれば明らかなように、実施例用混合粉末を用いた焼結磁石(サンプルeおよびサンプルf)の結晶粒径は、比較例用合金粉(単一合金)を用いた焼結磁石(サンプルgおよびサンプルh)の結晶粒径に比べて大きい。偏光顕微鏡写真から求めた平均結晶粒径は、サンプルeは17.9μm、サンプルfは18.5μm、サンプルgは4.8μm、サンプルhは4.8μmであった。残留磁束密度Brは、サンプルeが1.190T、サンプルfが1.181T、サンプルgが1.159Tおよびサンプルhが1.161Tであった。\n\n【0065】\n\nなお、実施例用混合粉末を用いた成形体の焼結条件を、焼結温度:1040℃、焼結時間:16時間とした場合には、得られた焼結磁石の平均結晶粒径は8μmよりも小さく、焼結体密度が十分ではなかった。このことから、平均粒径が8μm以上となるように焼結することが好ましい。また、平均粒径が40μmを超えると残留磁束密度が低下するので平均粒径は、8μm以上40μm以下の範囲内にあることが好ましい。\n\n【0066】\n\n図3に各サンプルの配向度パラメータの値を示す。\n\n【0067】\n\n図3から分かるように、比較例用合金粉末を用いた焼結磁石は、配向度が低く、配向磁界として交番反転磁界を印加すると、静磁界を印加した場合よりも更に配向度が低下している。これに対し、実施例用の混合粉末を用いると、比較例用合金粉末を用いた焼結磁石よりも配向度が高い。さらに、交番反転磁界を印加した焼結磁石(サンプルaおよびサンプルe)は静磁界を印加した焼結磁石(サンプルbおよびサンプルf)よりも高く、配向度パラメータは0.990を超えている。この理由は以下のように考えられる。\n\n【0068】\n\n元素の濃度勾配が大きいため、焼結過程において結晶粒が粗大化するが、この過程で、配向を乱す要因となる微細な結晶粒が大きな粒子に吸収され消失する。その結果、焼結体中の微細な結晶粒の数が少なくなるため、高い配向度が得られるのである。\n\n【産業上の利用可能性】\n\n【0069】\n\n上述したように、本発明によると、従来よりも配向度の高いR-Fe-B系希土類焼結磁石およびその製造方法が提供される。本発明によるR-Fe-B系希土類焼結磁石は、小型モーターに好適に用いられる。\n\n【図面の簡単な説明】\n\n【0070】\n\n【図1】(a)は実施例用混合粉末1を用いて交番反転磁界を印加しながら作製した成形体から形成された焼結磁石(サンプルa)の断面偏光顕微鏡写真であり、(b)は実施例\n\n用混合粉末1を用いて静磁界を印加しながら作製した成形体から形成された焼結磁石(サンプルb)の偏光顕微鏡写真であり、(c)は比較例用合金粉末1を用いて交番反転磁界を印加しながら作製した成形体から形成された焼結磁石(サンプルc)の断面偏光顕微鏡写真であり、(d)は比較例用合金粉末1を用いて静磁界を印加しながら作製した成形体から形成された焼結磁石(サンプルd)の断面偏光顕微鏡写真である。\n\n【図2】(a)は実施例用混合粉末2を用いて交番反転磁界を印加しながら作製した成形体から形成された焼結磁石(サンプルe)の断面偏光顕微鏡写真であり、(b)は実施例用混合粉末2を用いて静磁界を印加しながら作製した成形体から形成された焼結磁石(サンプルf)の偏光顕微鏡写真であり、(c)は比較例用合金粉末2を用いて交番反転磁界を印加しながら作製した成形体から形成された焼結磁石(サンプルg)の断面偏光顕微鏡写真であり、(d)は比較例用合金粉末2を用い静磁界を印加しながら作製した成形体から形成された焼結磁石(サンプルh)の断面偏光顕微鏡写真である。\n\n【図3】各サンプルの配向度パラメータPを示すグラフである。', '技术领域\n\n[0001]\n\n本发明涉及一种R-Fe-B基稀土烧结磁体及其制备方法。\n\n发明背景\n\n[0002]\n\n稀土合金的烧结磁体（永磁体）通常通过烧结稀土合金粉末的压块和必要时的时效处理来生产。\n\n[0003]\n\n目前，在各个领域中广泛使用两种钐·钴型磁铁，钕·铁·硼型磁铁。其中，钕 - 铁 - 硼基磁性（以下.R称为“R-Fe-B磁体”是包括Y的稀土元素，Fe为铁，B是硼。）是不同的磁体的由于它们中显示出最高的最大磁能产品且价格相对较低，因此在各种电子设备中得到了积极的应用。\n\n[0004]\n\nR-Fe-B系烧结磁铁，主要为R  2 铁 14 主相由B四方化合物的，由Nd的等富R相，和B富相。注意，Fe的一部分可以被诸如Co或Ni的过渡金属取代，并且B的一部分可以被C替代。了本发明优选地应用于R-Fe-B烧结磁体，例如，在美国专利号4770723和美国专利4792368号中所描述。\n\n[0005]\n\n为了制备这种R-Fe-B合金作为磁体，迄今为止使用了铸锭铸造方法。根据一般锭铸造过程中，稀土类金属为起始原料，电解铁和铁硼合金高频加热，通过将所得的熔融金属的合金锭相对缓慢冷却在模具中被产生。\n\n[0006]\n\n最近，将熔融合金单辊，双辊，旋转盘或由与旋转圆筒形模具的内表面接触，例如，较快的冷却，熔融的合金，比锭（“合金薄片”的薄的凝固合金将被称为通过带铸工艺或制造的离心铸造方法已经注意到为代表）的淬火方法。通过这样的急冷法制造的合金薄带的厚度通常在约0.03毫米或更多的范围内，以约10毫米。根据骤冷法，熔融合金开始从表面与冷却辊（辊接触面），在从辊接触面滑入生长柱状的厚度方向的晶体接触凝固。其结果是，由这样的薄带连铸法，约0.1μm或更大以下短轴尺寸制成至约100微米，约5微米或更长轴的大小至约500微米或更小 -  [R  2 和Fe  14  B型晶体相，R  2 铁 14 富R相，其存在分散于B中的结晶相的晶粒边界和它有一个组织包含。富R相是具有相对高浓度的稀土元素R的非磁性相。\n\n[0007]\n\n淬冷合金是传统的铸锭铸造法（模具铸造）相比相对短的时间制造的合金（铸块合金）通过（冷却速度：10  2 ℃/秒，10  4 °C /秒或更小），微观结构细化并且晶粒尺寸小。此外，晶界的大面积，富R相，因为它已经在晶界广为流传，有一个优点，即具有优异的富R相的分散性。这些特征因此，通过使用急冷凝固合金，能够制造具有优异的磁特性的磁体。\n\n[0008]\n\n在本说明书中，固体物质的合金称为“合金锭”，通过冷却进行淬火的方法，如合金锭和带坯连铸法获得的合金薄片的熔体通过常规锭铸造工艺获得并包括获得的固化合金。\n\n[0009]\n\n使用通过粉碎这些合金块获得的细粉生产模制体。细粉末进行制造成型体，如氢化的研磨方法和/或各种机械研磨法（例如，使用球磨机或磨碎机），并在地面上，所得到的粗粉末（例如，平均的例如，通过使用喷射磨机的干式粉碎法，粒径为10μm至500μm）。从磁特性的观点来看，细粉的平均粒径优选在1.5μm至7μm的范围内。这里，除非另有说明，否则粉末的“平均粒度”在此称为FSSS（Fisher Sub-Sieve Sizer）粒径。\n\n[0010]\n\n单轴压模广泛用于制造模塑体。特别地，在制造具有高最大磁能积的烧结磁体（异常烧结磁体）的情况下，在压缩步骤中施加定向磁场。此时晶粒的取向度越高，最大磁能积越大。此外，Br为小具有高取向度的横向（垂直于取向磁场的方向）的，则获得的效果是小的磁偏置。\n\n[0011]\n\n作为提高取向，在现有技术的程度，如在单轴压制成型过程中施加的取向磁场的方法，在施加强度的方法是大脉冲磁场已经采用。然而，为了施加强脉冲磁场，磁路的尺寸增加。此外，因为由于定向磁场（模具）的应用管芯由涡流被加热（例如达到60℃或更高），这是需要冷却模具，就不可能连续成型。\n\n[0012]\n\n注意的是，使用等静压压缩成型方法，诸如CIP法或RIP法，能够获得具有比单轴加压成形方法的较高的取向度的模制产品，通过CIP方法或RIP法得到的成型品，的，因为低尺寸精度（因为通常膨胀成型体的中央部），以便获得具有所需外形的烧结磁体，有必要处理该烧结体，生产效​​率和材料的成品率很低。\n\n[专利文献1]日本未审专利公开No.Hei 6-96928\n\n发明内容\n\n发明内容\n\n[0013]\n\n本发明是鉴于上述方面而完成的，所以能够获得具有比即使使用R-Fe-B系稀土烧结磁体冲压成形法的常规高取向度的烧结磁铁并提供制造它的方法。\n\n发明内容\n\n[0014]\n\n用于制造本发明的稀土类烧结磁铁的制造方法是一种制造R-Fe-B系稀土烧结磁体的方法，该轻稀土元素LR（镧，铈，镨或更少11原子％至18原子％，的Nd，PM，钐，选自Eu和Gd组成的组中的至少一种稀土元素，以及至少一个Nd和Pr），4原子％以上且所述元件的（硼的12原子％或更少或者包括硼和碳的混合物），余量为Fe或Fe和其它过渡金属元素T的混合物，它有一个组合物，它是微量添加元素M和不可避免的杂质，D99（累积体积比有制备第一合金粉末粒径）12μm的是或更少至99％，35原子％至10原子％或更多以下的重稀土类元素HR的（Y，Tb时，镝，钬，铒，铥，其中Yb和至少一种稀土元素）选自路组成的组中，和0原子％到元件（硼或硼和碳的混合物）的10原子％，其余Fe或者Fe和过渡金属的元素T的其它混合物的部分具有该组合物是非常小的添加元素M和不可避免的杂质，D99（在累积体积分数颗粒直径为99％）是在12微米或更小制备某些第二合金粉末中，第一混合细合金粉末和第二合金粉末，制备粉末混合物，所述粉末混合物，同时施加一个交换域作为取向磁场通过压缩和模塑成型体获得成型体，以及烧结成型体以获得烧结体的步骤。烧结温度的范围内，例如1000℃以上1140℃以下，烧成时间，例如在1小时内或少于8小时的范围内。\n\n[0015]\n\n在一个实施方案中，混合粉末含有1质量％以上且50质量％的第二合金细粉。\n\n[0016]\n\n在一个实施方案中，第一和第二合金细粉的平均粒度为2.0μm以上且5.0μm以下。\n\n[0017]\n\n在一个实施方案中，在烧结步骤中，进行晶粒生长，直到主相的平均晶粒尺寸在8μm至40μm的范围内。\n\n[0018]\n\n在一个实施例中，反转磁场的强度为2.5T或更小。反转磁场的强度优选为1.0T以上。\n\n[0019]\n\n在一个实施方案中，第二合金细粉的重稀土元素HR含有选自Dy和Tb中的至少一种元素。\n\n[0020]\n\n在一个实施方案中，制备模塑体的步骤使用单轴压模法进行。\n\n[0021]\n\n本发明的稀土类烧结磁铁的特征在于，可以通过上述任一制造方法制造。\n\n[0022]\n\n在一些实施例中，剩余磁通密度Br  X ，这两个方向的剩余磁通密度的取向磁场的方向垂直于取向磁场的方向溴ý和Br  x   2  + Br  y   2  + Br  1/2 ，（= Br  x  /）到Br  x  Bs\'）被定义为取向度参数P，取向度参数P的值超过0.990。\n\n发明效果\n\n[0023]\n\n根据本发明，可以制造具有比常规使用单轴压模更高取向度的R-Fe-B基稀土烧结磁体。\n\n具体实施方式\n\n[0024]\n\n在下文中，将参考附图描述根据本发明实施例的制造R-Fe-B基稀土烧结磁体的方法。\n\n[0025]\n\n，制造根据本发明的一个实施方式的R-Fe-B系稀土烧结磁体，作为稀土类元素中，除了由钕为代表的轻稀土元素LR使用的Dy表示的重稀土类元素HR的方法。此外，含有轻稀土元素LR，与其细粉后分别和混合提供含有单独的重稀土类元素HR，第二合金构成的第一合金（第一合金粉末和第二合金粉末）使用所得混合粉末制造模塑制品（有时称为“混合方法”）。此时，第一合金粉末和第二合金粉末均，D99在由FSSS得到的细粉（颗粒尺寸的累积体积分数为99％）的颗粒尺寸分布是12微米或更小。\n\n[0026]\n\n这里，第一合金含有至少一种选自La，Ce，Pr，Nd，Pm，Sm，Eu和Gd的稀土元素，其含量为11-18at％和包括Nd和Pr）中的至少一个，和4原子％以上且12原子％或更少的元件（硼或硼和碳的混合物），余量为Fe，或Fe和其它过渡金属元素T是Ti，微量元素M和不可避免的杂质的混合物。\n\n[0027]\n\n在另一方面，第二合金是35原子％以下的重稀土类元素HR的10原子％或更多的（Y，Tb的至少一种稀土元素，镝，钬，铒，铥，镱，选自路的组中选择）如果在元素的0原子百分数至10原子％，且（硼或硼和碳的混合物），余量为Fe，或者Fe和其他是一种混合物元素T的过渡金属的，微量添加元素M和它具有不可避免的杂质成分。\n\n[0028]\n\n顺便提及，所述过渡金属元素为钛，钒，铬，锰，铁，钴，镍等，元件T，Fe或者Fe的那些部分是由Ni和Co，优选至少一个取代。此外，微量添加元素M是铝，铜，镓，铬，钼，V，优选的Nb和Mn中的至少一种，其含量优选为至多5原子％。\n\n[0029]\n\n第一合金粉末和第二合金粉末的混合粉末最好包括第二合金粉末的1重量％〜50重量％。如果大于上述范围的第二合金细粉末的量是小的，它可能无法获得将在后面描述，本发明的效果，而，如果第一细合金粉末超过上述范围的量是小的，第一细合金包含在粉末R的主相 2 铁 14  B型结晶相减少，并且问题，即剩余磁通密度Br下降。\n\n[0030]\n\n在所获得的最终的混合粉末或烧结体中的重稀土类元素的比例优选为10原子％或更少0.1原子％以上的范围内。如果重稀土类元素的比例小于上述范围时，可能不能获得后述，而当重稀土类元素的比例小于上述范围时，本发明的效果，磁特性，例如剩余磁通密度Br在某些情况下可能会降低。\n\n[0031]\n\n顺便提及，通过上述已知方法制备第一和第二合金细粉。然而，从磁特性的观点出发，优选使用通过淬火通过带铸法为代表方法制造的合金薄片（例如，见美国专利5666635号公报）。此外，该混合粉末的最终表面进行制造成型体的，如果必要的话，优选的是适用于提高氧化物的抑制和/或可流动性和可模塑性的润滑剂。\n\n[0032]\n\n在施加反转磁场作为取向磁场的同时，进行用于获得混合粉末的成型体的压缩成型工艺。通过施加反转磁场作为取向磁场，可以获得比传统磁场更高的取向度。此外，在下文中的磁场强度2.5T获得由施加所述交换域所获得的效果，则不必施加脉冲磁场，它可以被应用于静态交替反转字段。因此，不会发生由于施加反转磁场引起的骰子的温度上升。当反转磁场的强度低于1.0T时，在某些情况下可能无法获得上述效果。\n\n[0033]\n\n从生产率的观点来看，混合粉末的压缩成型优选使用单轴压模法进行。单轴加压成形，例如，使用电压，0.2吨/厘米 2 〜2.0吨/厘米 2 （1.96×10  4 千帕至1.96×10  5  kPa）。\n\n[0034]\n\n当烧结成型体，在烧结过程中，轻稀土元素之间的重稀土类元素HR和相互扩散LR发生，主要含有轻稀土HR作为稀土类元素的主相（R-Fe-B系结晶相）在稀土元素HR的周围引入重稀土元素HR。由于具有这样的结构，与重稀土元素HR在整个主相中均匀分布的结构相比，抑制了室温下矫顽力的降低。\n\n[0035]\n\n此外，以后，以指示实验例中，混合所述第二合金粉末，其包括在烧结过程中的晶粒的重稀土类元素度HR，生长（粗大化）时（主相）特异性发生。从这一事实可以认为，减少导致取向度降低的细晶粒的数量有助于取向度的增加。\n\n[0036]\n\n为了获得优选具有第一合金粉末和第二合金细粉末的平均粒径这样的效果都为2.0μm或低于5.0μM。小的粉末是难以处理容易比该范围被氧化，相反越大，则难以在烧结过程中以致密，或矫顽力有时会导致降低的问题。\n\n[0037]\n\n在烧结步骤中，优选生长晶粒直到主相的平均晶粒尺寸在8μm至40μm的范围内。如果最终晶粒的平均晶粒尺寸小于8μm，则在某些情况下可能无法充分获得由于晶粒粗化而改善取向度的效果。相反，当晶粒的平均晶粒尺寸超过40μm时，磁性能（例如，剩余磁通密度B  r ）可能降低。烧结条件例如在1000℃至1140℃的范围内，例如，在1小时至8小时的范围内。可以设定为使晶粒生长至上述平均晶粒尺寸。烧结气氛可以是例如减压的惰性气体气氛。的平均粒径，绘制通过将线段的长度由主相在烧结磁体（晶体）晶界的交点的数目所确定的线段的结构照片，（有向直径）。如果需要，可以将所获得的烧结体在例如约450℃至约800℃的温度下老化约1小时至约8小时。\n\n[0038]\n\n根据本发明，施加在开关字段作为定向磁场，通过晶粒的粗大化的在烧结过程中的影响，从而提高取向度的效果的实施例的制造方法。当混合含有重稀土元素HR的第二合金细粉时，具体地获得这两种效果。当使用含有重稀土类元素HR和轻稀土元素LR单一合金粉末（有时被称为“单合金法”。）得不到这些效果。从磁特性和价格的观点来看，轻稀土元素LR优选为Nd或Pr，重稀土元素HR优选为Dy或Tb。\n\n[0039]\n\n根据如上所述，由于足够高的取向度的制造方法也进行不牺牲制造效率得到通过使用单轴挤压成型方法制备成型体的步骤，可以提高取向度你可以。当然，即使使用CIP方法或RIP方法，也可以获得改善取向度的效果。\n\n[0040]\n\n为了定量地评价取向度，如下面例示的实验例中所示，引入如下定义的取向度参数P.\n\n[0041]\n\n剩余磁通密度Br 的烧结磁体的成型体（x轴方向）上，这两个方向的剩余磁通密度的得到的取向磁场方向的X垂直于取向磁场的方向溴 x   2  + Br  y   2  +溴ž  2 ）定向的比率 1/2 于BR  X 被定义为度数参数P（P = Br  x  / Bs\'）。取向度参数P是在实验上，将烧结体加工在x，立方体通过使用磁通计分别由垂直平面到y和z轴（例如切割），在每个方向上的剩余磁通并测量密度Br。例如，按压方向是z轴方向，与x轴和z轴正交的方向是y轴方向。\n\n[0042]\n\n目前，基于R-Fe-B系的取向度参数P的值稀土类烧结磁铁已经大量生产使用，而为0.980以上0.990以下的范围内的冲压成形法（包括Dy等重稀土类），通过根据本发明的实施方式的制造方法得到的R-Fe-B系稀土烧结磁体的取向度参数P的值小于0.990以上。\n\n[0043]\n\n专利文献1中，通过用主相的Nd  2 铁 14 为在B结晶相的表面附近的Nd的一部分的Dy和/或Tb ，矫顽力得到改善，退磁得到抑制。然而，本发明人已经研究，在专利文献1中公开的方法中，超过获得烧结磁体取向参数的P值0.990。\n\n[实施例]\n\n[0044]\n\n现在将通过实施例的方式用于制造根据本发明的稀土类烧结磁体的制造方法进行说明，本发明并非旨在由以下实施例的限制。\n\n[0045]\n\n作为第一粉末合金，组合物LR（ND）：12.2原子％，B：7.5原子％以下，Co：1.2原子％以下，Al：0.6原子％以下，Cu：0.1原子％，余量：铁是和不可避免的杂质制备合金细粉。\n\n[0046]\n\n作为第二合金粉末，该组合物HR（DY）：11.1％（原子），LR（ND）：12.2原子％，余量：铁和不可避免的杂质合金细粉末（实施例用于第二合金粉末1）的HR（镝）22.3％（原子）组成，剩余部分：制备合金是Fe和不可避免的杂质粉末（例如用于第二合金粉末2）。\n\n[0047]\n\n此外，作为一个单一的合金粉末进行比较，组合物LR（ND）：12.1％（原子），HR（DY）：2.0原子％，B：6.1原子％以下，Co：1.0原子％以下，Al：0.5原子％以下，Cu：0.1原子％，余量：铁和不可避免的杂质和细合金粉末（比较例合金粉末1），该组合物LR（ND）：9.9％（原子），HR（镝）：4.0原子％，B ：原子％以下，Co：1.0原子％以下，Al：0.49原子％以下，Cu：0.1原子％，余量：制备和Fe和不可避免的杂质和细合金粉末（比较例合金粉末2）。\n\n[0048]\n\n所有上述合金细粉末均通过以下方法制备。\n\n[0049]\n\n首先，通过带铸法生产每种组合物的合金薄片。通过氢化粉碎法将该合金薄片粉碎，得到粗合金粉末。通过使用喷射磨中在氮气气氛研磨该合金粗粉末，D99为11微米，平均颗粒尺寸，以获得4.0微米的合金粉末。\n\n[0050]\n\n在质量和第一合金粉末和第二合金粉末1，例如，78：实施例用于该混合粉末1 22中的比例混合，用摇摆式混合机混合，混合实施例获得粉末1。所有稀土元素中Dy的含量为5质量％（2.0原子％）。\n\n[0051]\n\n2实施例的混合粉末和所述第一合金粉末，与第二合金粉末2和例如质量，78：22倍的比例混合，用摇摆式混合机混合，混合实施例获得粉末2。所有稀土元素中Dy的含量为10质量％（4.0原子％）。\n\n[0052]\n\n比较例1的合金粉末1：使用比较例1的单一合金微粉末。所有稀土元素中Dy的含量为5质量％（2.0原子％）。\n\n[0053]\n\n比较例的合金粉末2：使用比较例2的单一合金微粉末。所有稀土元素中Dy的含量为10质量％（4.0原子％）。\n\n[0054]\n\n将0.4质量％的液体润滑剂添加并混合到混合粉末或单一合金细粉中得到的粉末材料进行压制步骤。\n\n[0055]\n\n单轴加压成型（加压压力0.8吨/厘米 2 （7.84×10  4 千帕），而使用的电动压力机装置粉末材料施加取向磁场由得到的成型体（长度40毫米×横30毫米×高20毫米）。在定向磁场的方向垂直于冲压方向。\n\n[0056]\n\n另外，在制造该实施例的烧结磁体的情况下，施加1.7T的交替反向磁场作为取向磁场。为了比较，施加1.7T的静磁场作为取向磁场。\n\n[0057]\n\n在1080℃将所得8小时成形体，烧结在真空中Ar气氛，然后在500℃进行1小时时效处理的..\n\n[0058]\n\n从获得的烧结体中，一边切出7毫米立方体，在立方溴 X 的每个方向上的剩余磁通密度与磁通计，溴ý和Br测量 z 。磁化磁场为10T。\n\n[0059]\n\n亮度参数P = Br  x  / Bs\'来自剩余磁通密度Br  x ，Br  y 和Br  z 算了。这里，则将bS\' =（BR  X   2  +溴ý  2  +溴ž  2 ） 1/2 。\n\n[0060]\n\n此外，使用SEM和EPMA观察所得烧结磁体的横截面。平均晶粒尺寸由偏光显微照片确定。\n\n[0061]\n\n图1（a）至1（d）显示含有5质量％Dy的稀土烧结磁体的极化显微照片。图1（a）是从而施加交流通过使用混合粉末1例如，图开关场产生的模制体形成的烧结磁铁（样品A）的横截面偏光显微镜照片。图1（b）烧结磁铁（样品b），这是从在施加静磁场与1的实施例的混合粉末，制作图的成型体形成的偏光显微镜照片。图1（c）比较例合金粉末1 （样品c）由使用比较例的合金粉末1施加交替反向磁场而制造的压块形成，其中使用比较例合金粉末1测量静磁场由施加横截面偏振显微镜照片时产生的成形体形成的烧结磁体（样品d）的截面图。\n\n[0062]\n\n通过比较图1（a）和1（b）以及图1（c）和1（d）可以明显看出，使用混合粉末作为工作实例的烧结磁体（样品a和样品b）的晶粒使用用于比较的合金粉末（单一合金），直径大于烧结磁体（样品c和样品d）的晶粒尺寸。由偏振显微照片获得的平均晶粒尺寸对于样品a为10.5μm，对于样品b为11.2μm，对于样品c为4.8μm，对于样品d为4.9μm。样品a的剩余磁通密度Br  x 为1.307T，样品b为1.302T，样品c为1.290T，样品d为1.284T。\n\n[0063]\n\n图2（a）至2（d）显示含有10质量％Dy的稀土烧结磁体的偏振显微照片。图2（a）是使用实施例的混合粉末2施加交替反转磁场而得到的成形体形成的烧结磁铁（试样e）的截面偏振显微镜照片，图2（b）烧结磁铁（样品F），它是由在施加静磁场与2的实施例的混合粉末，制作图的成型体形成的偏光显微镜照片。图2（c）比较例合金粉末2图2（d）是由使用比较例用合金粉末2施加交替反转磁场而得到的成形体形成的烧结磁铁（试样g）的截面偏振显微镜照片， （样品h）由通过将烧结磁体施加到烧结磁体（样品h）而制备的压块形成。\n\n[0064]\n\n图2（a）和2（b）和图2（c）和和（d）由于是从比较清楚，使用实施例的混合粉末的烧结磁铁（样品E和样品F）的晶粒使用用于比较的合金粉末（单一合金），直径大于烧结磁体（样品g和样品h）的晶粒尺寸。由偏振显微照片获得的平均晶粒尺寸对于样品e为17.9μm，对于样品f为18.5μm，对于样品g为4.8μm，对于样品h为4.8μm。样品e的剩余磁通密度Br为1.190T，样品f为1.181T，样品g为1.159T，样品h为1.161T。\n\n[0065]\n\n当使用该实施例的混合粉末的压块的烧结条件为烧结温度：1040℃和烧结时间：16小时时，所得烧结磁体的平均晶粒尺寸为8μm ，并且烧结体的密度不足。由此，优选进行烧结，使平均粒径为8μm以上。当平均粒径超过40μm时，剩余磁通密度降低，因此平均粒径优选在8μm至40μm的范围内。\n\n[0066]\n\n图3显示了每个样品的取向度参数的值。\n\n[0067]\n\n如从图3可以看出，使用的合金粉末为比较例的烧结磁体中，取向度低时，施加交替切换字段作为定向磁场，施加静态磁场时相比，进一步的取向度时降低那里。另一方面，当使用实施例的混合粉末时，取向度高于使用比较例的合金粉末的烧结磁体的取向度。此外，施加交流开关场（样品A和样品E）的烧结磁体高于施加静态磁场（样品B和样品F）的烧结磁体，取向参数被超过0.990。其原因考虑如下。\n\n[0068]\n\n由于元素的浓度梯度大时，晶粒变得在烧结过程中粗，在这个过程中，微细晶粒，其是干扰对准丢失被吸收到较大颗粒的一个因素。结果，由于烧结体中的细晶粒的数量减少，因此可以获得高取向度。\n\n[工业适用性]\n\n[0069]\n\n工业实用性如上所述，根据本发明，提供一种具有比常规更高取向度的R-Fe-B基稀土烧结磁体及其制备方法。根据本发明的R-Fe-B基稀土烧结磁体适用于小型电动机。\n\n附图说明\n\n[0070]\n\n[1]（a）是从而施加交流通过使用混合粉末1例如开关场产生的模制体形成的烧结磁铁（样品A）的横截面偏光显微镜照片，（b）中图1是使用实施例的混合粉末1施加静磁场而得到的成形体的烧结磁铁（试样b）的偏光显微镜照片，（c）是比较例的粉末1的照片。由施加交替反向磁场时产生的压块形成的烧结磁体（样品c）的截面图，（d）是烧结磁体的横截面偏振显微照片图7是由成形体形成的烧结磁体（样品d）的横截面偏振显微照片。\n\n图2（a）是由使用实施例的混合粉末2施加交替反转磁场而制成的压块形成的烧结磁体（样品e）的横截面偏振显微照片;（b）图1是使用实施例的混合粉末2施加静磁场而得到的成形体的烧结磁铁（试样f）的偏光显微镜照片，（c）是比较例合金粉末2的粉末照片。由施加交替反转磁场时产生的压块形成的烧结磁体（样品g）的截面图，（d）是通过使用合金粉末2施加静磁场制备的样品的横截面偏振显微照片。由成形体形成的烧结磁体（样品h）的偏振光显微照片的截面图。\n\n图3是显示每个样品的取向度参数P的图。');
INSERT INTO `os_patent_instruction_text` VALUES (13047, 22876, '【技術分野】\n\n【0001】\n\n本発明は、希土類系永久磁石などの被処理物の表面にAlやその合金の蒸着被膜を形成する方法に関する。\n\n【背景技術】\n\n【0002】\n\n希土類系永久磁石などの被処理物に、耐食性や、樹脂系接着剤との接着耐久性などの特性を付与する目的で、Alや、AlとMgやMnやCuなどとの合金の蒸着被膜をその表面に形成することが従来から行われており、今日、例えば、表面にAlやその合金の蒸着\n\n被膜を形成することでこのような特性が付与された希土類系永久磁石は、電子部品に適用されるモータに組み込まれるなどして幅広く用いられている。\n\nしかしながら、Alやその合金の蒸着被膜は、上記のような優れた特性を有する反面、その物性として硬度が低いという特性を有する。従って、バレルなどの収容部材内に大量の被処理物を収容し、一度で大量の被処理物の表面にこれらの蒸着被膜を形成しようとした場合、収容部材内で、被処理物同士の衝突や擦れ合い、被処理物と収容部材壁面との衝突や擦れ合いといった現象が生じ、これにより被処理物の表面に形成された蒸着被膜が損傷を受け、その一部が削れ、さらに削れた切片が被処理物などと擦れ合うことによって粒状化して他の蒸着被膜部分に付着し、その上にさらに蒸着被膜が形成されることで、蒸着被膜を形成した後にピーニング加工などを行っても除去不可能な突起物が蒸着被膜に生成するという問題がある。\n\nそこで、このような問題を解消するための方法として、特許文献1において、真空処理室内に、蒸着材料の溶融蒸発部と、複数個の被処理物を収容するための収容部材を備えた蒸着装置を用い、複数個の被処理物を収容した収容部材を水平方向の回転軸線を中心に回転させながら、Alやその合金の蒸着材料を被処理物の表面に蒸着させるに際し、被処理物の表面に形成されたAlやその合金の蒸着被膜のビッカース硬度を25以上に維持して蒸着を行う方法が提案されている。\n\n特許文献1において提案されている方法は、被処理物の必要以上の温度上昇を抑制しながら蒸着を行うことで、被処理物の表面に形成されたAlやその合金の蒸着被膜のビッカース硬度を25以上に維持することにより、収容部材内で、形成された蒸着被膜が軟化し、被処理物同士の衝突や擦れ合い、被処理物と収容部材壁面との衝突や擦れ合いといった現象によって損傷を受けやすくなることを抑制し、その結果として形成される蒸着被膜に突起物が生成することを効果的に抑制することができるものであり、蒸着被膜に突起物が生成したり、蒸着被膜が損傷を受けたりすることで不良品として扱われる個数を大幅に減少させることができることから、たいへん評価される方法である。\n\n【特許文献1】特開2002-88468号公報\n\n【発明の開示】\n\n【発明が解決しようとする課題】\n\n【0003】\n\nしかしながら、特許文献1において提案されている方法を採用した場合でも、必ずしも不良品として扱う必要がない程度の小さな突起物は、Alやその合金の蒸着被膜に数多く生成してしまっており、突起物の生成を抑制することで、より優れた表面平滑性を有する蒸着被膜を形成する方法が望まれている。また、この方法を採用した場合、真空処理室内の温度がある一定以上にならないように制御しなければならないため、所望の膜厚(例えば5μm〜10μm)の蒸着被膜を被処理物の表面に形成するために必要な時間が、このような配慮が不要な場合に比較して長くなることがあり、少なからず生産性を犠牲にしなければならない場合があるという問題がある。\n\nそこで本発明は、Alやその合金の蒸着被膜を、希土類系永久磁石などの被処理物の表面に、突起物の生成や損傷を効果的に抑制しつつ、優れた生産性でもって形成する方法を提供することを目的とする。\n\n【課題を解決するための手段】\n\n【0004】\n\n本発明者は、上記の点に鑑みて鋭意研究を重ねた結果、Alやその合金の蒸着被膜に突起物が生成したり、蒸着被膜が損傷を受けたりしやすいのは、その物性として硬度が低いということ以外にもその被膜組織が関係していること、そして、特許文献1において提案されている方法により形成される蒸着被膜の被膜組織は、柱状晶のような形状の剥離しやすいものであることを突き止めた。従って、何らかの方法で、形成される蒸着被膜の被膜組織を改変して緻密化することができれば、蒸着被膜の損傷を軽減することができると考えられた。そこで、さらに研究を積み重ねた結果、意外にも、蒸着を開始する前に、被処理物を高温加熱しておくと、形成される蒸着被膜の被膜組織が緻密化され、突起物の生成\n\nや損傷を効果的に抑制しつつ、優れた生産性でもって被処理物の表面に蒸着被膜を形成することができることを見出した。\n\n【0005】\n\n上記の知見に基づいてなされた本発明のAlまたはその合金の蒸着被膜を被処理物の表面に形成する方法は、請求項1記載の通り、真空処理室内に、蒸着材料の溶融蒸発部と、複数個の被処理物を収容するための収容部材を備えた蒸着装置を用い、複数個の被処理物を収容した収容部材を水平方向の回転軸線を中心に回転させながら、Alまたはその合金の蒸着材料を被処理物の表面に蒸着させるに際し、予め、被処理物を200℃〜350℃に加熱しておいてから蒸着を開始することを特徴とする。\n\nまた、請求項2記載の方法は、請求項1記載の方法において、被処理物が希土類系永久磁石であることを特徴とする。\n\n【発明の効果】\n\n【0006】\n\n本発明によれば、Alやその合金の蒸着材料を被処理物の表面に蒸着させるに際し、予め、被処理物を200℃〜350℃に加熱しておいてから蒸着を開始することで、形成される蒸着被膜の被膜組織を緻密化することができる。従って、バレルなどの収容部材に大量の被処理物を収容し、一度で大量の被処理物の表面にこれらの蒸着被膜を形成する場合であっても、形成された蒸着被膜が損傷を受けること、それによって蒸着被膜に突起物が生成することを効果的に抑制することができる。また、真空処理室内の温度制御を厳密に行う必要がないので、優れた生産性でもって被処理物の表面に蒸着被膜を形成することができる。\n\n【発明を実施するための最良の形態】\n\n【0007】\n\n本発明のAlやその合金の蒸着被膜を被処理物の表面に形成する方法は、例えば、図1に示したような蒸着装置を用いて行うことができる。図1はその内部の模式的正面図(一部透視図)であり、図略の真空排気系に連なる真空処理室1の室内上方には、水平方向の回転軸線上の回転シャフト6を中心に回転自在とした支持部材7が2個併設されており、この支持部材7の回転シャフト6の周方向の外方に、6個の例えばステンレス製のメッシュ金網で形成された円筒形バレル5が、複数個の被処理物30の収容部材として支持軸8によって回転シャフト6を中心に公転自在に環状に支持されている。また、室内下方には、Alやその合金の蒸着材料を蒸発させる溶融蒸発部であるハース(蒸着材料を溶融させるための容器)2が、支持テーブル3上に立設されたハース支持台4上に複数個配置されている。支持テーブル3の下方内部には、蒸着材料であるAlやその合金のワイヤー9が繰り出しリール10に巻回保持されている。Alやその合金のワイヤー9の先端はハース2の内面に向かって臨ませた耐熱性の保護チューブ11によってハース2の上方に案内されている。保護チューブ11の一部には切り欠き窓12が設けられており、この切り欠き窓12に対応して設けられた繰り出しギア13がAlやその合金のワイヤー9に直接接触し、これを繰り出すことによってハース2内に蒸着材料であるAlやその合金が絶えず供給されるように構成されている。この蒸着装置によれば、円筒形バレル5内に複数個の被処理物30を収容し、矢示したように支持部材7を回転させることで、円筒形バレル5を回転シャフト6を中心に公転運動させるとともに、Alやその合金のワイヤー9を図略の加熱手段によって所定温度に加熱したハース2に連続供給しながら溶融させて蒸発させることで、円筒形バレル5内の複数個の被処理物30の表面にAlやその合金の蒸着被膜を一度で形成することができる。\n\n【0008】\n\n図1に示した蒸着装置における上記の構成は、特許文献1にも記載されている公知の構成であるが、図1に示した蒸着装置は、この構成に加え、本発明のAlやその合金の蒸着\n\n被膜を被処理物の表面に形成する方法を効率的に実施することができるように、真空処理室1の内壁面の右斜上と左斜上に、円筒形バレル5内に収容された被処理物30を加熱するための加熱手段として、近赤外線ヒーター20が設けられている。この近赤外線ヒーター20を用い、予め、円筒形バレル5内に収容された被処理物30を200℃〜350℃に加熱しておいてから蒸着を開始する。事前加熱温度が200℃を下回ると、被処理物30の表面に形成される蒸着被膜の被膜組織を緻密化することが困難になることで、蒸着被膜に突起物が生成したり、蒸着被膜が損傷を受けたりしやすくなる。一方、事前加熱温度が350℃を上回ると、蒸着開始後にハース2からの輻射熱により被処理物30がさらに加熱されることもあって、その表面に形成された蒸着被膜が軟化することで、蒸着被膜に突起物が生成したり、蒸着被膜が損傷を受けたりしやすくなる。この点に鑑みれば被処理物30の温度は蒸着を開始した後も350℃以下に維持されることが望ましいので、蒸着開始時には近赤外線ヒーターの電源をオフにすることが望ましい。つまり、被処理物30の事前加熱温度は、低すぎても高すぎても、蒸着被膜に突起物が生成したり、蒸着被膜が損傷を受けたりしやすくなるということである。なお、被処理物30の事前加熱温度は205℃〜340℃が望ましく、210℃〜320℃がより望ましい。\n\n【0009】\n\nなお、円筒形バレル内に収容された被処理物を加熱するための加熱手段は、上記の構成に限定されるものではなく、近赤外線ヒーターに替えて遠赤外線ヒーターや中近赤外線ヒーターを用いてもよい。また、円筒形バレル自体を通電加熱するようなものであってもよい。\n\n【0010】\n\n蒸着材料となるAlやその合金のワイヤーは、水素を含有してなるものが望ましい。ワイヤーを蒸発させた際、真空処理室内に水素を供給することができるので、別途の手段で真空処理室外部から水素を供給しなくても、真空処理室内を還元性雰囲気にして、例えば10-3Pa以上といったような酸素分圧下であっても、ハース内で溶融させた段階や蒸発させた段階の蒸着材料の酸化を防止することができるからである。ワイヤーの水素含有量は、1ppm〜20ppmが望ましく、2ppm〜10ppmがより望ましい。水素含有量が1ppmを下回ると、真空処理室内に水素を十分に供給することができない恐れがある一方、水素含有量が20ppmを上回ると、ハース内で水素がボイリングして溶融した蒸着材料が飛び散り、被処理物の表面に被着してしまう(スプラッシュ)現象が起こる恐れがあるからである。\n\n【0011】\n\nAlやその合金のワイヤーのハースへの送り出し速度は、1g/分〜10g/分が望ましく、2g/分〜5g/分がより望ましい。送り出し速度が1g/分を下回ると、Alやその合金のワイヤーを効率よく溶融させることができない恐れがある一方、送り出し速度が10g/分を上回ると、ハース内で溶融されないAlやその合金のワイヤーがスプラッシュを引き起こす恐れがあるからである。\n\n【0012】\n\n本発明の方法を用いて、Alの合金の蒸着被膜を被処理物の表面に形成する場合、蒸着被膜がMgおよび/またはCuを0.1mass%〜20mass%、望ましくは1mass%〜10mass%含むようにすれば、蒸着被膜の本質的な硬度を高めることができるので、この効果と相俟って、蒸着被膜に突起物が生成したり、蒸着被膜が損傷を受けたりすることを極めて効果的に抑制することができる。\n\n【0013】\n\nこの場合、ハースの加熱温度は、1300℃〜1500℃が望ましい。加熱温度が1300℃を下回ると、Alの合金のワイヤーを効率よく溶融させることができない恐れがあるからである。Alの合金のワイヤーを効率よく溶融させることができないと、Alの蒸気圧とMgおよび/またはCuの蒸気圧の違い(Mgが最も蒸気圧が高い)が、形成される蒸着被膜の金属組成に多大な影響を与え、蒸着被膜に含まれるMgおよび/またはCuの量が、Alの合金のワイヤーに含まれるMgおよび/またはCuの量と大きく異なると\n\nいった現象が起こり、被処理物の表面に意図した金属組成のAlの合金の蒸着被膜を形成することができない場合がある。一方、加熱温度が1500℃を上回ると、周辺温度が高くなり過ぎることでAlの合金のワイヤーが軟化して保護チューブの内部で詰まるなどするので、これをハースに円滑に連続供給することができなくなる恐れがあるからである。\n\n【0014】\n\n本発明のAlやその合金の蒸着被膜を被処理物の表面に形成する方法は、例えば、真空蒸着法のように蒸着材料を単に加熱によって蒸発させて被処理物の表面に蒸着被膜を形成する方法にも適用することができるし、例えば、イオンプレーティング法のように蒸発した蒸着材料をイオン化させて被処理物の表面に蒸着被膜を形成する方法にも適用することができる。\n\n【0015】\n\nなお、本発明の方法の適用対象となる被処理物としては、希土類系永久磁石が挙げられるが、被処理物はこれに限定されるものではなく、Alやその合金の蒸着被膜を表面に形成することができるものであればどのようなものであっても構わない。\n\n【実施例】\n\n【0016】\n\n以下、本発明を実施例と比較例によってさらに詳細に説明するが、本発明はこれに限定して解釈されるものではない。なお、以下の実施例と比較例は、例えば、米国特許4770723号公報や米国特許4792368号公報に記載されているようにして、公知の鋳造インゴットを粉砕し、微粉砕後に成形、焼結、熱処理、表面加工を行うことによって得られた14Nd-79Fe-6B-1Co組成(at%)の縦50mm×横20mm×厚み2mm寸法の板状焼結磁石(以下「磁石体試験片」と略称する)を用いて行った。\n\n【0017】\n\n実施例1および実施例2:\n\n図1に示した基本構成を有する溶融加熱方式のイオンプレーティング式蒸着装置を用いて、表1に示す組成のワイヤーを蒸着材料にして、蒸着被膜を磁石体試験片の表面に形成する以下の実験を行った。用いた円筒形バレルは、直径110mm×長さ600mmのステンレス製で、メッシュの開口率が64%(開口部となる目開きの一辺が4mmの正方形で、線径が1mm)のものであり、1個の支持部材に6個(図2に示すように2連式であるので合計12個)支持されている。\n\nサンドブラスト加工を行った後の磁石体試験片を、12個の円筒形バレルの各々に各200個ずつ、左右2セットで、合計4800個収容した。\n\n真空処理室内を全圧が5×10-2Pa以下になるまで真空排気した後、回転シャフトを1.5rpmで回転させながら、近赤外線ヒーターで円筒形バレル内に収容された磁石体試験片を300℃まで加熱し30分間保持した(温度の確認はニコン社製の赤外線カメラを用いたモニタリングによる)。次に、近赤外線ヒーターの電源をオフにしてから、Arガスを全圧が1Paになるように導入し、バイアス電圧-1000Vの条件下で15分間表面スパッタし、磁石体試験片の表面を清浄化した。この時点での磁石体試験片の温度(ニコン社製の赤外線カメラを用いたモニタリングによる)を表2に示す。続いて、バイアス電圧-1000Vの条件下で、蒸着材料のワイヤーを、送り出し速度3g/分で、真空処理室内への通電加熱により約1400℃に制御されたハースに送り出して連続供給して溶融させ、蒸発させ、イオン化させて30分間イオンプレーティングを行い、蒸着被膜を磁石体試験片の表面に形成した。放冷後、表面に蒸着被膜が形成された磁石体試験片について、以下の項目を評価した。その結果を表2に示す。\n\n【0018】\n\n(1)表面に形成された蒸着被膜の膜厚(n=10の平均値)\n\n(2)個々の磁石体試験片の外観\n\n(3)JIS  B0601-1994における粗さ曲線の平均線よりも10μmを超える高さの突起物の、任意に選択した蒸着被膜の表面1cm2当たりの個数(n=10の平均値)\n\n(4)蒸着終了後の蒸着被膜のビッカース硬度(n=3の平均値)\n\n【0019】\n\nなお、(3)の突起物の個数は、上記の方法で得られた表面に蒸着被膜が形成された磁石体試験片に対し、表面粗さ形状測定器(東京精密社製)を用いて計測した。(4)の蒸着終了後の蒸着被膜のビッカース硬度は、測定装置として日本光学社製の高温顕微硬度計QM型を用い、上記の方法で得られた表面に蒸着被膜が形成された磁石体試験片を、蒸着終了時の温度(概ね220〜230℃:ニコン社製の赤外線カメラを用いたモニタリングによる)まで加温し、試験加重0.5N、加重負荷時間30秒の条件で測定した。\n\n【0020】\n\nまた、磁石体試験片の表面に形成された蒸着被膜の組成を表3に示す。なお、蒸着被膜の金属組成は、磁石体試験片とともに円筒形バレルに収容したガラス板(35mm×10mm×1mm)の表面に形成された蒸着被膜を溶融後、原子発光分析装置(島津製作所社製)を用いて測定した。蒸着被膜の水素含有量は、グロー放電発光分析装置(島津製作所社製)を用いて測定した。\n\n【0021】\n\n比較例1:\n\n実施例1および実施例2における近赤外線ヒーターを用いた円筒形バレル内に収容された磁石体試験片の加熱を行わないこと以外は、実施例1および実施例2と同様にして、表1に示す組成のワイヤーを蒸着材料にして、蒸着被膜を磁石体試験片の表面に形成した。放冷後、表面に蒸着被膜が形成された磁石体試験片について、実施例1および実施例2に記載の項目を同様にして評価した。その結果を表2に示す。また、磁石体試験片の表面に形成された蒸着被膜の組成を表3に示す。\n\n【0022】\n\n【表1】\n\n\n\n【0023】\n\n【表2】\n\n\n\n【0024】\n\n【表3】\n\n\n\n【0025】\n\n表2から明らかなように、実施例1および実施例2では、蒸着を開始する前に、磁石体試験片を加熱しておいたことで、磁石体試験片の表面に形成された蒸着被膜に生成した突起物の個数は、室温状態にある磁石体試験片に対して蒸着を開始した比較例1において、磁石体試験片の表面に形成された蒸着被膜に生成した突起物の個数よりも、少なくなった。また、実施例1および実施例2では、比較例1と比較して、蒸着被膜の損傷も抑制され、磁石体試験片の表面に形成された蒸着被膜は外観において優れたものであった。\n\n実施例1と比較例1のそれぞれにおいて磁石体試験片の表面に形成されたAlの蒸着被膜の破断面観察写真をそれぞれ図3と図4に示す。図3と図4から明らかなように、比較例1において形成されたAlの蒸着被膜の被膜組織は、柱状晶のような形状の剥離しやすいものであるのに対し、実施例1において形成されたAlの蒸着被膜は、非常に緻密な被膜組織であることがわかった。\n\nよって、実施例1において形成されたAlの蒸着被膜が有する優れた特性は、その被膜組織が緻密であることによると考えられた。また、実施例2において形成されたAlのMgとの合金の蒸着被膜がさらに優れた特性を有するのは、蒸着被膜がMgを約5mass%含むことにより、蒸着被膜の硬度が本質的に高まったためであると考えられた。\n\n【産業上の利用可能性】\n\n【0026】\n\n本発明は、Alやその合金の蒸着被膜を、希土類系永久磁石などの被処理物の表面に、突起物の生成や損傷を効果的に抑制しつつ、優れた生産性でもって形成する方法を提供することができる点において産業上の利用可能性を有する。\n\n【図面の簡単な説明】\n\n【0027】\n\n【図1】本発明に適用される蒸着装置の一例の真空処理室の内部の模式的正面図(一部透視図)。\n\n【図2】その支持部材に支持された円筒形バレルの模式的斜視図。\n\n【図3】実施例1において形成されたAlの蒸着被膜の破断面観察写真。\n\n【図4】比較例1において形成されたAlの蒸着被膜の破断面観察写真。\n\n【符号の説明】\n\n【0028】\n\n1  真空処理室\n\n2  ハース(溶融蒸発部)\n\n3  支持テーブル\n\n4  ハース支持台\n\n5  円筒形バレル(収容部材)\n\n6  回転軸\n\n7  支持部材\n\n8  支持軸\n\n9  蒸着材料のワイヤー\n\n10  繰り出しリール\n\n11  保護チューブ\n\n12  切り欠き窓\n\n13  繰り出しギヤー\n\n20  近赤外線ヒーター(加熱手段)\n\n30  被処理物', '【技术领域】\n\n【0001】\n\n本发明涉及一种在诸如稀土基永磁体的物体表面上形成A1和合金沉积膜的方法。\n\n发明背景\n\n【0002】\n\n为了赋予耐腐蚀性和粘合性耐久性的特性,例如基于树脂基永磁体的粘附耐久性等。通常在表面上形成,例如,在表面上形成Al和表面的合金。\n\n通过将薄膜结合到施加到电子部件的电动机中,通过形成薄膜施加这种特性的稀土基永磁体。\n\n然而,Al和合金的蒸发涂层具有硬度低至物理性质作为上述优异性质的性质。因此,当大量的处理对象容纳在诸如桶的存储构件中时,试图在大量待处理的物体上形成大量的沉积膜以形成这些气相沉积膜,所以碰撞要治疗的物体是一种现象,例如用与待处理的物体的慢摩擦关系摩擦和摩擦,并且由此引起的存储构件,并且在待处理的物体表面上形成的沉积涂层损坏,一部分其中被切断并进一步切断。通过用待处理的物体等摩擦并附着到另一个气相沉积膜部分的物体等来造粒,并且进一步形成气相沉积膜,并进一步形成气相沉积膜在形成气相沉积膜之后,即使在形成气相沉积膜之后也可以去除。存在突起在气相沉积膜中产生的问题。\n\n因此,作为解决这种问题的方法,在专利文献1中,一种沉积装置,其设置有气相沉积材料的熔体蒸发部分和用于容纳多个物体以使用存储构件容纳多个物体的存储构件将多个物体含有多个物体,而Al和合金气相沉积材料在围绕物体的旋转轴线旋转的同时在待处理的物体的表面上的气相沉积,则通过维持来提出进行气相沉积的方法在25或更多和沉积中形成的Al或合金的维氏硬度。\n\n专利文献1中提出的方法在抑制待处理物体的温度升高的同时进行气相沉积,在待处理物体的表面上进行气相沉积,并且Al和合金的蒸发涂层的维氏硬度待处理物体的表面。通过保持至少25,形成的气相沉积膜在储存构件中软化,并且由诸如碰撞和彼此摩擦的现象引起的损坏,待处理的物体和存储构件壁表面和狭缝可以有效地抑制了所形成的气相沉积膜中产生突起,并且可以有效地抑制所得的气相沉积膜,并且气相沉积涂层损坏。它是一种方法非常评估,因为通过接收可以显着降低作为缺陷产品的数量。\n\n专利文献1:APHN 2002-88468\n\n发明的描述\n\n本发明要解决的问题\n\n【0003】\n\n然而,即使采用专利文献1所提出的方法,不一定必须被视为缺陷产物的小突起也具有大量的Al和合金的蒸发涂层,并且通过抑制A的产生,突起期望形成具有优异表面平滑度的气相沉积膜的方法。此外,当采用该方法时,必须控制真空处理室的温度,以便不超过一定水平,使得所需的膜厚度(例如,5μm至10μm)的沉积膜是形成在要治疗的物体的表面上。有问题是,与不必要的情况相比,可以更长的时间来延长做出这样的考虑所需的时间,并且存在它必须以牺牲生产率为代价的问题。\n\n因此,本发明是一种以优异的生产率形成的方法,同时有效地抑制Al或合金沉积涂层的表面上的突起的形成,例如稀土基永磁体,有效地抑制投影的产生和损坏。它旨在提供。\n\n[解决问题的手段]\n\n【0004】\n\n由于考虑到上述点,本发明人在Al或合金的蒸发涂层中突出,并且除了低,涂层组织相关和硬度可能会被沉积膜损坏。通过专利文献1中提出的方法形成的气相沉积膜的涂层组织易于剥离柱状晶体的形状。我发现存在。因此,如果可以以任何方式修改和致密化,可以减少对气相沉积膜的损坏。因此,由于进一步研究研究,出乎意料地,在开始沉积之前,致密化待形成的沉积膜的涂层组织,以及突起的形成\n\n在有效地抑制损伤的同时,已经发现可以在待处理的物体的表面上形成气相沉积涂层,以优异的生产率处理。\n\n【0005】\n\n如权利要求1所述的基于上述本发明的本发明的本发明的蒸汽沉积涂层的方法,其中,如权利要求1所述的上述发现,其中所述真空处理室位于真空处理室中,并且沉积材料的熔融蒸发部分,使用具有用于容纳用于容纳Al或合金的多个物体,Al或合金的接收构件的蒸镀装置,同时在水平方向上旋转包含多个物体的存储构件将气相沉积材料沉积在待处理的物体的表面上,其特征在于在将待加工物体加工至200℃至350℃的物体之前开始沉积。\n\n3.根据权利要求2所述的方法的特征在于,根据权利要求1所述的方法是稀土永磁体。。\n\n【发明效果】\n\n【0006】\n\n根据本发明,当在待处理物体表面上沉积Al或合金的沉积材料时,通过将待对象进行200℃至350℃的物体形成,然后形成沉积。可以致密化待进行沉积膜的气相沉积膜的涂层组织。因此,即使在诸如筒的储存构件中容纳大量的处理对象,并且在一次占据大量物体的表面上形成大量的沉积膜,所形成的气相沉积膜是受到损坏,可以有效地抑制气相沉积膜中的突起的产生。另外,由于不必严格地在真空处理室中进行温度控制,因此可以在待处理物体的表面上形成气相沉积膜以具有优异的生产率。\n\n实施本发明的最佳方式\n\n【0007】\n\n使用例如图2所示的气相沉积装置,进行在待处理物体的表面上形成形成沉积涂层的Al和本发明的合金的方法。图。图1是其示意性正视图(局部透视图),并且在水平方向上以旋转轴线连接到真空排气系统和旋转轴6的真空处理室1上。两个可旋转的支撑构件7组合,并且圆柱形筒5形成为六个,例如,在支撑构件7的旋转轴6的圆周方向上形成的不锈钢网格,支撑轴8被支撑轴8枢转地支撑,作为多个对象30。而且,在房间下方,骑猪圈(用于沉积沉积材料的容器)2,其是蒸发Al或合金2的沉积材料的熔融蒸发单元,在支撑台3上竖立的HERS支撑件4上布置有多个部件。在支撑台3的下侧,作为气相沉积材料的Al或合金的导线9保持在进料卷轴10中。 Al和合金的线9的尖端在摩托螺纹保护管11上方朝向Haas 2的内表面被引导。切口窗口12设置在保护管11的一部分中,并且设置在凹口窗口12的展开齿轮13接触Al或合金的线9,并根据HAAs 2,Al和合金重复这一点,这是一种气相沉积材料,不断供应。根据该气相沉积设备,多个物体30容纳在圆柱形筒5中,并且通过箭头所示旋转支撑构件7,圆柱形筒5围绕旋转轴6旋转。或者,多个工件通过加热和蒸发通过加热和蒸发来熔化和蒸发Al和合金的线9的圆柱形筒5,同时通过加热装置将Al和合金的线9连续向预定温度加热到预定温度的霍塞尔2。Al或合金的沉积涂层可以在30的表面上一次形成。\n\n【0008】\n\n尽管图1所示的气相沉积设备中的上述配置。如图1所示,图1所示的是专利文献1中描述的已知配置,如图1所示的沉积装置。添加到本发明的该构型,Al和合金中。气相沉积\n\n在真空处理室1的右倾斜和左对角线上的圆柱形镜筒5中包含的盖子,使得有效地进行待形成在待处理物体的表面上的膜。近红外线加热器提供20作为加热处理物30的加热装置提供。使用该近红外线加热器20,存储在圆柱形筒5中的物体30被加热至200℃至350℃,然后开始气相沉积。当预热温度低于200℃时,难以将形成在物体30的表面上的气相沉积膜的涂层组织致密,从而在气相沉积膜或气相沉积中产生突起电影使其变得容易受损。另一方面,当预热温度超过350℃时,在气相沉积开始之后,通过来自Heath 2的辐射热进一步加热物体30,并且在表面上形成的气相沉积膜是软化。在涂层中产生突起,气相沉积膜容易损坏。鉴于这一点,希望在开始沉积之后,希望将待处理物体30的温度保持在350℃或更低。希望关闭近红外加热器的电力沉积的开始。也就是说,即使要加工的物体的预热温度太低,也易于在气相沉积膜中产生突起,并且气相沉积膜容易损坏。待处理物体30的预热温度优选为205℃至340℃,更优选为210℃至320℃。\n\n【0009】\n\n用于加热在圆柱形筒中加热物体的加热装置不限于上述配置,而是取代近红外加热器并使用远红外线加热器或中央红外线加热器。它也很好。另外,圆柱形桶本身可以被加热。\n\n【0010】\n\n希望待蒸发材料的Al和合金的电线含有氢。当线可以蒸发时,可以将氢气供应到真空处理室,使得即使没有通过单独的方式从真空处理室的外部供应氢气,真空处理室是减少气氛,例如10-3这是因为它可以防止阶段的沉积阶段氧化熔化并蒸发在骑马者或更多中,例如Pa或更高。导线的氢含量理想地为1ppm至20ppm,更优选为2ppm至10ppm。当氢含量小于1ppm时,氢含量不能充分供应到真空处理室中,而氢含量超过20ppm,氢气煮沸并在骑马者中融化的气相沉积材料被溅出。这是因为它可能导致施加到要处理的物体表面的现象。\n\n【0011】\n\n将Al和合金电线的进料速率理想地是1g / min至10g / min,更理想的是2g / min至5g / min。当进料速率小于1g / min时,Al和合金的导线不能有效地熔化,而进料速率超过10g / min,则Al的导线和不熔化在岩石中的合金。是因为那里是一种造成飞溅的风险。\n\n【0012】\n\n当用本发明的方法在待处理物体表面上形成Al合金的沉积涂层时,气相沉积涂层为0.1质量%至20质量%,优选1质量%至10质量%的气相沉积涂层。另外,由于气相沉积膜的必需硬度可以增强,结合这种效果,因此在气相沉积膜中产生突起或气相沉积膜损坏的突起是非常有效的。可以抑制突起。可以抑制突起。可以抑制突起。\n\n【0013】\n\n在这种情况下,HEATH的加热温度优选为1300℃至1500℃。这是因为当加热温度低于1300℃时,Al合金的电线可能无法有效地熔化。如果Al合金的电线不能有效地熔化,则Al的蒸气压和Mg和/或Cu和/或Cu(Mg是最高蒸气压)的蒸气压,沉积膜的金属组合物形成了很大抗蒸汽沉积涂层中含有的抗冲击和/ /或Cu的抗冲量与Al合金线中所含的Mg和/或Cu的量显着不同\n\n发生这种现象,并且可能无法形成用于待处理物体表面的金属组合物的Al合金的气相沉积膜。另一方面,当加热温度超过1500℃时,通过软化外围温度,Al合金的导线软化并在保护管内堵塞,因此可以连续供应到骑马者。它是因为有一个灭绝的风险。\n\n【0014】\n\n在待处理的物体的表面上形成一种形成本发明的Al和合金的沉积涂层的方法是,例如,通过简单地将气相沉积材料作为真空蒸发方法蒸发,以在表面上形成气相沉积涂层待处理的物体也可以应用于该方法,并且还可以应用于以离子电镀方法蒸发的电离蒸发材料的方法,以在待处理物体的表面上形成气相沉积膜。\n\n【0015】\n\n尽管将待处理的材料应用于本发明方法的应用包括稀土基永磁体,但是待处理的物体不限于此,并且形成Al和合金的沉积涂层表面。如果可以完成,它可能是任何可以完成的。\n\n【例子】\n\n【0016】\n\n在下文中,将通过实施例和比较例更详细地描述本发明,但是本发明不限于此。在以下实施例和比较例中,在微粒后,已知的铸造锭被压碎,烧结,热处理,例如,如美国专利No.4,522,588中所述。通过表面处理(以%)垂直×20mm×厚度2mm尺寸板状烧结磁体(下文中的缩写为“磁体试验片”)获得的-1CO组合物(以%)。\n\n【0017】\n\n实施例1和实施例2:\n\n表1中所示的组合物的电线用作气相沉积材料,该熔融加热型离子镀层型沉积装置具有图1所示的基本配置。如图1所示,在磁体样本的表面上形成气相沉积膜。进行实验。使用的圆柱形筒由直径为110mm×600mm的不锈钢制成,网格的孔径为64%(开口中的开口的一侧为4毫米,线径为1 MM),支持六片支撑构件(如图2所示的两个芯所示)。\n\n进行喷砂后共有4800件磁体样品,每个12个圆柱形桶,每个左右2套。\n\n真空处理室总压力为5×10-2在抽空之后直到它等于或更小,旋转轴以1.5rpm旋转,并且圆柱形筒中包含的圆柱体试验片被加热至300℃并保持30分钟(通过使用红外线监测温度确认尼康制造的相机)。接下来,在关闭近红外加热器之后,引入总压力使得总压力为1Pa,并且在偏置电压-1000V的条件下,表面溅射15分钟,并且磁体样本的表面是清理。我是表2显示了此时磁体样本的温度(通过使用尼康制造的红外相机进行监控)。随后,在偏置电压-1000V的条件下,通过以3g / min的递送速度加热,并连续供应和熔化,将沉积材料的导线输送到约1400℃的岩石。通过加热和熔化。蒸发和蒸发电离,进行离子镀30分钟,在磁体样品的表面上形成气相沉积膜。冷却后,对在表面上形成气相沉积涂层的磁体样本评价以下项目。结果显示在表2中。\n\n【0018】\n\n(1)在表面上形成的气相沉积膜的膜厚度(n = 10的平均值)\n\n(2)单个磁体车身测试件的外部\n\n(3)高突起的高度选择气相沉积涂层的表面1cm大于10μm的高于10μm,比JIS B0601-1994中的平均粗糙度曲线线2百分比数(n = 10的平均值)\n\n(4)气相沉积结束后气相沉积膜的Viper硬度(平均值n = 3)\n\n【0019】\n\n(3)的突起数量是使用表面粗糙度形状测量装置(由Tokyo Precision Co.,Ltd。制造)相对于磁体试验片来测量,其中在通过上述的表面上形成气相沉积涂层方法。做了。 (4)沉积结束后气相沉积膜的长度是磁体试验,其中在通过使用由日本制成的高温微观仪器QM型通过上述方法获得的表面上形成气相沉积膜。一种测量装置。将碎片在气相沉积结束时(约220至230℃:通过使用尼康公司制造的红外相机进行监测,并在测试重量0.5n和重量的条件下测量加载时间为30秒。\n\n【0020】\n\n此外,在磁体型试验片的表面上形成的气相沉积膜的组成示于表3中。气相沉积膜的金属组合物熔化形成在玻璃板的表面(35mm×10mm×1mm)的气相沉积膜,其容纳在圆柱形筒中,然后与磁体试验片一起,然后是原子发光分析仪(由Shimadzu Corporation使用)使用的Shimadzu公司制造)。使用辉光放电光发射分析仪(由Shimadzu Corporation制造)测量气相沉积膜的氢含量。\n\n【0021】\n\n比较例1:\n\n以与实施例1和实施例2相同的方式,除了在表1中,除了在实施例1中的近红外加热器和实施例2中没有加热包含在圆柱形筒中的磁体样本和实施例2中所示的组合物的电线进入气相沉积材料,在磁体型试验片的表面上形成气相沉积膜。冷却后,以与在表面上形成气相沉积涂层的磁体试验片相同的方式评价实施例1和实施例2中描述的项目。结果显示在表2中。此外,在磁体型试验片的表面上形成的气相沉积膜的组成示于表3中。\n\n【0022】\n\n【表格1】\n\n\n\n【0023】\n\n[表2]\n\n\n\n【0024】\n\n[表3]\n\n\n\n【0025】\n\n从表2中明显看出,在实施例1和2中,在开始气相沉积之前,将磁体型试验片加热到形成在磁体类型试验片的表面上的气相沉积膜。产生的突起的数量是比较例图1所示,在室温状态下相对于磁体型试验片开始气相沉积,其在磁体试验片的表面上形成的气相沉积膜中产生的突起的数量大于,其变为低。此外,在实施例1和实施例2中,与比较例1相比,抑制了对气相沉积膜的损坏,并且在磁体样本的表面上形成的气相沉积膜的外观优异。\n\n在实施例1和比较例1的每一个中,在图1中示出了在磁体型试验片的表面上形成的Al的气相沉积膜的裂缝表面观察照片。参照图3和图3。从图中明白。参照图3和图3.如图4所示,在比较例1中形成的Al的气相沉积膜的涂层组织在实施例1中形成,同时易于剥离诸如柱状晶体的形状。它被发现Al的气相沉积涂层是非常致密的涂层组织。\n\n因此,认为,实施例1中形成的Al的气相沉积涂层具有优异的特性是紧凑的涂层组织。另外,由于实施例2中形成的Mg Al的合金的沉积涂层进一步优异,因此气相沉积膜的硬度基本上通过气相沉积涂层含有约5质量%的Mg。它被认为是。\n\n【工业可用性】\n\n【0026】\n\n在本发明中,形成Al和合金的沉积涂层的方法是优异的生产率,同时有效地抑制物体表面上的突起的形成和损伤,例如稀土永磁体。提供工业可用性可以提供。\n\n[简要描述;简介]\n\n【0027】\n\n【图1】施加到本发明的沉积设备的示例的真空处理室的示意图(局部透视图)。\n\n【图2】支撑构件支撑的圆柱形筒的示意性透视图。\n\n图3.实施例1中形成的Al气相沉积膜的断裂表面观察。\n\n图4.比较例1中形成的Al气相沉积涂层的拍摄表面观察。\n\n[标志的说明]\n\n【0028】\n\n1真空处理室\n\n2哈斯(熔体蒸发部)\n\n3个支持表\n\n4有支持\n\n5圆柱桶(容器)\n\n6旋转轴\n\n7支持成员\n\n8支撑轴\n\n9个气相沉积材料\n\n10拒绝卷轴\n\n11保护管\n\n12个缺口窗口\n\n13档案\n\n20近红外线加热器(加热装置)\n\n30受保护的对象');
INSERT INTO `os_patent_instruction_text` VALUES (13048, 22877, 'TECHNICAL FIELD\n\nThe present invention relates to a method for imparting hydrogen resistance to various types of articles such as a rare earth metal-based permanent magnet.\n\nBACKGROUND ART\n\nAs a means for preventing global warming attributed to CO2 emission, hydrogen gas fuels are attracting attention. today as alternatives for oil and coal fuels (fossil fuels) that have depended so far in relation with environmental technology, and development of various systems such as power generation, cooling, and storage using hydrogen gas as fuels has been energetically carried out. In due course of developing such systems, an expansion in the applications of rare earth metal-based permanent magnets, such as R—Fe—B based permanent magnets represented by a Nd—Fe—B based permanent magnet, is expected because the magnets are made from low cost materials that are abundant in resources and have superior magnetic characteristics, and if embedded in circulation motors and magnetic sensors that are used in supplying or transporting hydrogen gases, they can realize low cost compact systems.\n\nIn the case of considering extending the application of rare earth metal-based permanent magnets in the fields using hydrogen gas as fuels, the magnets should have hydrogen resistance during usage which resist to environments of high hydrogen gas pressure. However, considering a case of an R—Fe—B based permanent magnet, for instance, the magnet possesses high hydrogen absorptivity as is clear from the fact that this magnet is manufactured through the process of finely dividing magnetic powder by pressurized crushing using hydrogen gas. Accordingly, in case hydrogen gas is present in the environment the magnet is used, there may be assumed an environment in which the hydrogen gas pressure may be 100 kPa or higher regardless of whether the environment is made up of hydrogen gas alone or formed of a mixed gas of hydrogen gas and other gases; in such a case, there is such a problem that, if sufficient hydrogen resistance should not be imparted to the magnet, the magnet may absorb hydrogen and become brittle due to the reaction of R with hydrogen, thereby causing the formation of hydrides or an exothermic reaction, finally ending in the disruption of the magnet.\n\nAs a method for imparting hydrogen resistance to rare earth metal-based permanent magnets, there is proposed, for instance, a method according to patent reference 1 below, which comprises forming a Cu coating film on the surface of the magnet, and further forming on the surface thereof a metal coating film made of a metal more base than Cu, such as a Ni coating film. However, this method is merely a method for preventing the magnet from absorbing hydrogen gas that is generated during the formation of the metal coating film on the surface of the magnet. Accordingly, simple adoption of such a layered structure is not sufficient for imparting hydrogen resistance to the magnet for use under high hydrogen gas pressure environment such as 100 kPa or higher; in particular, under such an environment that hydrogen is diffused and evolved repeatedly to the metal coating film, there is a problem as such that the generation of blistering and peeling off of the coating film is provoked, thereby leading to an abrupt rupture of the magnet and the metal coating film at an early stage, and a disruption of the magnet. Further according to patent reference 2 below, there is proposed a method which comprises forming, on the surface of the magnet, a multilayered metal coating film having 4 layers or more of Ni coating film(s) and Cu coating film(s) as the constituent coating films, and the total film thickness is in a range of from 15 μm to 70 μm, provided that the thickness of the Cu coating film(s) accounts for 30% or more of the total film thickness. However, this method suffers problems such as a reduction in effective volume of the magnet and an increase in cost.\n\nPatent reference 1: JP-A-5-29119\n\nPatent reference 2: JP-A-2003-166080\n\nDISCLOSURE OF THE INVENTION\n\nProblems that the Invention is to Solve\n\nAccordingly, an object of the present invention is to provide a simple and low cost method for imparting excellent hydrogen resistance to various types of articles such as a rare earth metal-based permanent magnet.\n\nMeans for Solving the Problems\n\nIn the light of above circumstances, the present inventor has made extensive studies, and finally, he has found as a result that a metal coating film formed by pulse plating exhibits excellent hydrogen shielding property.\n\nA method for imparting hydrogen resistance to an article of the present invention that has been accomplished based on the findings above is, in a first embodiment, characterized by forming a metal coating film by pulse plating on the surface of the article.\n\nFurther, the method for imparting hydrogen resistance to an article of a second embodiment is a method for imparting hydrogen resistance to an article of the first embodiment, wherein the metal coating film is a Cu coating film.\n\nFurther, the method for imparting hydrogen resistance to an article of a third embodiment is a method for imparting hydrogen resistance to an article of the second embodiment, wherein the metal coating film is formed by using a plating solution containing from 0.03 mol/L to 1.0 mol/L of copper sulfate, from 0.05 mol/L to 1.5 mol/L of ethylenediaminetetraacetic acid, and from 0.1 mol/L to 1.0 mol/L of at least one selected from tartrates and citrates, with the pH adjusted to a range of from 10.0 to 13.0.\n\nFurther, the method for imparting hydrogen resistance to an article of a fourth embodiment is a method for imparting hydrogen resistance to an article as of the third embodiment, wherein the plating solution further contains from 0.02 mol/L to 1.0 mol/L of sodium sulfate.\n\nFurther, the method for imparting hydrogen resistance to an article of a fifth embodiment is a method for imparting hydrogen resistance to an article of the second embodiment, wherein the metal coating film is formed by using a plating solution containing from 0.03 mol/L to 1.0 mol/L of copper sulfate, from 0.05 mol/L to 1.5 mol/L of 1-hydroxyethylidene-1,1-diphosphonic acid, and from 0.01 mol/L to 1.5 mol/L of at least one selected from pyrophosphates and polyphosphates, with the pH adjusted to a range of from 8.0 to 11.5.\n\nFurther, the method for imparting hydrogen resistance to an article of a sixth embodiment is a method for imparting hydrogen resistance to an article of the first embodiment, wherein an anticorrosive coating film is further formed on the surface of the metal coating film.\n\nFurthermore, an article resistant to hydrogen of the present invention is, in a seventh embodiment, characterized by having a metal coating film formed on the surface thereof by pulse plating.\n\nFurthermore, the article resistant to hydrogen of an eighth embodiment is an article resistant to hydrogen of the seventh embodiment, wherein the metal coating film has in at least a part thereof multilayered structure constructed by the presence of the grain boundaries of platy crystals.\n\nFurthermore, the article resistant to hydrogen of a ninth embodiment is an article resistant to hydrogen of the eighth embodiment, wherein the platy crystals have preferred orientation with respect to (111) plane and (311) plane.\n\nFurthermore, the article resistant to hydrogen of a tenth embodiment is an article resistant to hydrogen of the seventh embodiment, wherein the article is a rare earth metal-based permanent magnet.\n\nFurthermore, an article resistant to hydrogen of the present invention is, in an eleventh embodiment, characterized by having formed on the surface thereof a metal coating film having in at least a part thereof multilayered structure constructed by the presence of the grain boundaries of platy crystals.\n\nEFFECT OF THE INVENTION\n\nAccording to the present invention, there can be provided a simple and low cost method for imparting excellent hydrogen resistance to various types of articles such as a rare earth metal-based permanent magnet.\n\nBRIEF DESCRIPTION OF THE DRAWINGS\n\nFIG. 1 is polar diagram for (111) plane and (220) plane of Cu coating film 1 to Cu coating film 3 of an example according to the present invention.\n\nFIG. 2 is an FE-SEM photograph of a partial cross section for the multilayered Cu coating film of an example according to the present invention.\n\nFIG. 3 is an FE-SEM photograph of a partial surface for the Cu coating film formed by pulse plating of an example according to the present invention.\n\nBEST MODE FOR CARRYING OUT THE INVENTION\n\nA method for imparting hydrogen resistance to an article of the present invention is characterized by forming a metal coating film by pulse plating on the surface of the article. As the metal species which constitutes the metal coating film formed by pulse plating, there can be mentioned Cu, Sn, Zn, Ag, and the alloys containing them, but particularly preferred among them is Cu exhibiting excellent hydrogen shielding property. Because Sn is apt to generate whiskers and Zn is a base metal having restrictions from the viewpoint of corrosion resistance if used alone, precautions should be taken in case Sn or Zn is selected.\n\nIn the case of selecting Cu as the metal species which constitutes the metal coating film formed by pulse plating on the surface of an article that is prone to be corroded, such as a rare earth metal-based permanent magnet, the Cu coating film is preferably formed by using a plating solution containing from 0.03 mol/L to 1.0 mol/L of copper sulfate, from 0.05 mol/L to 1.5 mol/L of ethylenediaminetetraacetic acid, and from 0.1 mol/L to 1.0 mol/L of at least one selected from tartrates (such as sodium salts and potassium salts) and citrates (such as sodium salts and potassium salts), with the pH adjusted to a range of from 10.0 to 13.0. Unlike a copper cyanide bath, the plating solution does not contain cyan or other chemical components harmful to environment, or unlike a pyrophosphate bath, the plating solution does not contain free copper ions in high amount which bring about substitution plating reaction on the surface of an article apt to be corroded, therefore it does not easily form a Cu coating film having inferior adhesion strength. A more preferable plating solution contains from 0.05 mol/L to 0.5 mol/L of copper sulfate, from 0.08 mol/L to 0.8 mol/L of ethylenediaminetetraacetic acid, and from 0.1 mol/L to 1.0 mol/L of at least one selected from tartrates (as stated above) and citrates (as stated above), with the pH adjusted to a range of from 11.0 to 13.0. Furthermore, the plating solution may additionally contain from 0.02 mol/L to 1.0 mol/L of sodium sulfate so that a Cu coating film may be formed efficiently free from unevenness. If the amount of addition should be lower than 0.02 mol/L, there is fear of impairing the Cu precipitation efficiency due to reduced electric conductivity of the plating solution; on the other hand, if the amount of addition exceeds 1.0 mol/L, there is fear of making it easier to form unevenness on the Cu coating film. In addition, there may be also added to the plating solution from 0.01 mol/L to 1.0 mol/L of an amino alcohol compound such as ethanolamine, or glycine, polyethylene glycol, and the like as a complexing agent. The addition of such complexing agents is advantageous in the following points. That is, even if free copper ions should generate in the plating solution, complexes are formed to suppress the substitution plating reaction attributed to the presence of free copper ions, thereby effectively preventing the formation of a Cu coating film having inferior adhesion strength. Moreover, because the generation of cuprous oxide is suppressed at the cathode, the formation of a rough Cu coating film is effectively prevented.\n\nIn the case of selecting Cu as the metal species which constitutes the metal coating film formed by pulse plating on the surface of an article that is prone to be corroded, such as a rare earth metal-based permanent magnet, the Cu coating film may be formed by using, as a plating solution other than above, a plating solution containing from 0.03 mol/L to 1.0 mol/L of copper sulfate, from 0.05 mol/L to 1.5 mol/L of 1-hydroxyethylidene-1,1-diphosphonic acid, and from 0.01 mol/L to 1.5 mol/L of at least one selected from pyrophosphates (such as sodium salts and potassium salts) and polyphosphates (such as sodium salts and potassium salts), with the pH adjusted to a range of from 8.0 to 11.5. Furthermore, for the purpose of preventing passivation of the anode by smoothing dissolution, of increasing the critical current density, or of reducing plating stress, there may be added to the plating solution from 0.1 mol/L to 1.0 mol/L of, for instance, tartrates (such as sodium salts and potassium salts), citrates (such as sodium salts and potassium salts), and oxalates (such as sodium salts and potassium salts).\n\nPreferably, pulse plating may be carried out, for instance in the case of forming a Cu coating film by using the plating solution above, by applying electric current in pulsed waveform with a maximum current density (CDmax) in a range of from 1 A/dm2 to 40 A/dm2 and a minimum current density (CDmin) in a range of from 0 A/dm2 to 5 A/dm2, while maintaining the duration of the maximum current density value (Ton) for 0.1 ms to 10 ms and the duration of the minimum current density value (Toff) for 0.5 ms to 10 ms, and under a bath temperature of from 30° C. to 70° C. By employing such conditions, a Cu coating film having superior hydrogen resistance can be obtained with excellent outer appearance free from surface burning and the like.\n\nThe thickness of the metal coating film that is formed by pulse plating is preferably 3 μm or thicker. If the film thickness is less than 3 μm, there is fear of insufficiently exhibiting the hydrogen resistance. The upper limit of the film thickness is not particularly limited, but in the case the article is a rare earth metal-based permanent-magnet, it is preferred to set at 20 μm from the viewpoint of assuring effective volume of the magnet or of suppressing the cost.\n\nBy further forming an anticorrosive coating film on the surface of the metal coating film formed by pulse plating, the hydrogen resistance can be more surely imparted to an article. The thickness of the anticorrosive coating film is preferably 1 μm or thicker. If the film thickness is less than 1 μm, there is fear of insufficiently exhibiting the effect of forming the coating film. As anticorrosive coating films, preferred are the metal coating films having excellent hydrogen resistance, such as those of Cu, Sn, Zn, Ag, and the alloys containing them, and a DLC film (Diamond Like Carbon film) that is hard and exhibits excellent gas shielding property, and suitable for preventing flaw generation in case the article is a rare earth metal-based permanent magnet and the magnet is used in motors such as IPM. The anticorrosive coating film, which is formed on the surface of the metal coating film formed by pulse plating, is preferably formed by continuous current-applying electric plating without applying electric current in pulsed waveform, or by dry plating. This is because, the formation of a discontinuous plane at a boundary between the metal coating film formed by pulse plating and the anticorrosive coating film formed on the surface thereof further increases the hydrogen shielding property. In the case of using the same metal species for the metal coating film formed by pulse plating and the anticorrosive coating film formed on the surface thereof, it is possible to simplify the process by applying electric current in pulsed waveform at first, and then switching to applying continuous electric current in a single plating bath. Furthermore, the metal coating film formed by pulse plating may be formed either directly on the surface of an article, or on the surface of a lower layer coating film formed on the surface of the article beforehand; for instance, by strike plating or ordinary plating according to a known method.\n\nIn the case an anticorrosive coating film is further formed on the surface of the metal coating film formed by pulse plating, or the metal coating film is formed by pulse plating on the surface of a lower layer coating film formed on the surface of an article, and in the case the article is a rare earth metal-based permanent magnet, the total film thickness that is formed on the surface of the magnet is preferably 50 μm or less, and more preferably, 40 μm or less, from the viewpoint of assuring effective volume of the magnet or of suppressing the cost.\n\nThe present invention is applicable not only to a rare earth metal-based permanent magnet used in environments of high hydrogen gas pressure, but also to any articles to which hydrogen resistance is required.\n\nEXAMPLES\n\nThe present invention is explained in further detail below by way of examples and comparative examples, but it should be understood that the invention is not limited thereto. The examples and comparative examples were carried out by using sintered magnets of 39 mm in length, 20 mm in width, and 3 mm in height, having a composition of 14Nd-0.5Dy-7B-Fe (balance) (in at %) (which are referred to simply hereinafter as “magnet test pieces”) prepared according to a process described in, for example, U.S. Pat. Nos. 4,770,723 and 4,792,368; i.e., by pulverizing a known cast ingot and then subjecting the resulting powder to a pressing, a sintering, a heat treatment and a surface working.\n\nExample 1\n\nA nickel (Ni) coating film of 1 μm in thickness was formed on the surface of the magnet test piece by Ni strike plating (Process step 1), and a copper (Cu) coating film of 8 μm in thickness was formed further thereon by Cu pulse plating (Process step 2). Furthermore, in the same plating bath, an application of electric current in pulsed waveform was switched to applying continuous electric current, to thereby form a Cu coating film of 27 μm in thickness on the surface thereof by Cu continuous current-applying electric plating (Process step 3). The plating conditions are as follows.\n\nProcess Step 1: Ni Strike Plating\n\nBath compositionNickel sulfate hexahydrate130 g/L (0.49 mol/L)Ammonium chloride15 g/L (0.28 mol/L)Diammonium citrate60 g/L (0.27 mol/L)Boric acid15 g/L (0.24 mol/L)Sodium sulfate35 g/L (0.25 mol/L)Bath temperature50° C.pH6.5 (adjusted with 28% ammonia water)Current density0.3 A/dm2Retention methodRack\n\n\n\nProcess Step 2: Cu Pulse Plating\n\nBath compositionCopper sulfate pentahydrate0.3 mol/LDisodium ethylenediaminetetraacetate0.5 mol/LSodium sulfate0.5 mol/LDisodium tartrate0.1 mol/LEthanolamine0.1 mol/LBath temperature60° C.pH11.5 (adjusted withsodium hydroxide)CDmax20 A/dm2CDmin0 A/dm2Ton1 msToff9 msRetention methodRack\n\n\n\nProcess Step 3: Cu Continuous Current-Applying Electric Plating\n\nBath composition, bath temperature, and pH are the same as those used in Cu pulse plating (the same plating bath was used).\n\nCurrent density 1 A/dm2 \n\nRetention method Rack\n\nThus obtained four magnet test pieces (samples) each having a multilayered metal coating film of 36 μm in total thickness on the surface thereof were subjected to pressurized hydrogen test at 60° C. under 1 MPa, and the time elapsed to disrupt the sample was measured. As a result, no sample disruption occurred even after 2000 hours from the starting of the test.\n\nComparative Example 1\n\nA Ni coating film of 1 μm in thickness was formed on the surface of the magnet test piece by Ni strike plating (under the same conditions as that described in Example 1), and a Cu coating film of 35 μm in thickness was formed further thereon by Cu continuous current-applying electric plating (under the same conditions as that described in Example 1). Thus obtained two magnet test pieces (samples) each having a multilayered metal coating film of 36 μm in total thickness on the surface thereof were subjected to pressurized hydrogen test at 60° C. under 1 MPa, and the time elapsed to disrupt the sample was measured. As a result, both samples were disrupted after 34 hours from the starting of the test.\n\nAnalysis and Discussion:\n\nAs is clearly understood from Example 1 and Comparative Example 1, although coating films of the same total thickness were provided, hydrogen resistance greatly differed depending on whether a Cu coating film formed by pulse plating was present or not. The results above were analyzed and discussed by the present inventor as follows.\n\nSince the equilibrium internuclear distance r0 in a hydrogen molecule is as small as r0=0.074 nm, in case a defect is present in the coating film, even if it should be a pinhole about several micrometers in size, hydrogen molecules easily reach the surface of the article through the defect. Furthermore, although depending on the type of the counter material, hydrogen molecules are so reactive that they are easily adsorbed and dissociated on the surface of the solid. The atomic hydrogen generated by dissociation of the hydrogen molecule is even smaller, and hence it can be incorporated into molecules or crystals and easily diffused inside the crystal. In order to prevent such hydrogen molecules from reaching the surface of the article, it is crucial to prevent the hydrogen molecules from intruding inside the coating film. From such a point of view, the methods for imparting hydrogen resistance to articles by forming a multilayered metal coating film on the surface thereof as disclosed in Patent reference 1 and Patent reference 2 aim to assure hydrogen shielding property by eliminating pinholes penetrating from the outside to the surface of the article. However, a Ni coating film, which is generally employed as a constituent coating film of forming a multilayered metal coating film because it has high leveling property, is apt to adsorb and dissociate hydrogen molecules on the surface thereof, and is prone to be intruded by atomic hydrogen. Furthermore, a Ni coating film suffers such problems that, because it has relatively high solid solubility for hydrogen, a large hydrogen flux occurs along the depth direction (the direction headed to the surface of the article) after solid solubility for hydrogen reaches a maximum.\n\nOn the other hand, differing from a Ni coating film, a Cu coating film is essentially excellent in hydrogen shielding property because less adsorption and dissociation of hydrogen molecules occur on the surface thereof, and solid solubility for hydrogen is relatively small. However, the results above indicate that there are factors in relation with hydrogen shielding property other than the essential property of the Cu coating film. Accordingly, the Cu coating film formed by pulse plating was analyzed in detail to obtain worthy findings never reported to present.\n\nFirst, the crystal orientation with respect to (111) plane and (220) plane of a Cu coating film (Cu coating film 1) of 8 μm in thickness, which was formed on the surface of the magnet test piece via a Ni coating film of 1 μm in thickness by carrying out the Process steps 1 and 2 in Example 1, was studied from polar diagram obtained by X-ray diffraction under conditions given below. At the same time, crystal orientation was studied in a similar manner as above on a Cu coating film (Cu coating film 2) of 8 μm in thickness, which was formed on the surface of the magnet test piece via a Ni coating film of 1 μm in thickness by carrying out the process under the same conditions as those for Cu coating film 1, except for performing Cu continuous current-applying electric plating at a current density of 1 A/dm2 in the place of Cu pulse plating; and on a Cu coating film (Cu coating film 3) of 8 μm in thickness, which was formed on the surface of the magnet test piece via a Ni coating film of 1 μm in thickness by carrying out the process under the same conditions as those for Cu coating film 1, except for performing Cu continuous current-applying electric plating at a current density of 0.2 A/dm2 in the place of Cu pulse plating and using a barrel in the place of using a rack as the retention method.\n\nPower output45 kV-40 mATargetCo-KαTime/step1 sStep width5° for φ and 5° for φAngle rangeφ: 0° to 85°, φ: 0° to 355°Symmetrical plane(111) plane: 2θ = 50.82°(220) plane: 2θ = 88.95°\n\nThe polar diagram for (111) plane and (220) plane for each of Cu coating film 1, Cu coating film 2, and Cu coating film 3 is shown in FIG. 1. FIG. 1 clearly shows that no distinct difference in orientation of (111) reflection and (220) reflection is observed for Cu coating film 2 and Cu coating film 3, but for Cu coating film 1, distinct preferred orientation is observed with respect to (111) reflection. Furthermore, distinct preferred orientation is observed with respect to the plane making an angle of 60° to the (111) reflection. Since Cu crystals are cubic, planes making an angle of about 60° to (111) plane can be (211) plane and (311) plane for cubic. Accordingly, 2θ-θ scanning was performed separately to investigate either of (211) plane and (311) plane corresponds to the observed plane making an angle of about 60° to (111) plane, and was found to be the (311) reflection. The fact that Cu coating film 1 shows preferred orientation with respect to (111) plane and (311) plane was also confirmed by a separately taken cross section FE-SEM photograph of Cu coating film 1. Based on these findings, it has been assumed that the reason why Cu coating film 1 exhibits excellent hydrogen shielding property is because of the special crystal orientation showing preferred orientation with respect to (111) plane and (311) plane, which is different from the crystal orientation of Cu coating film 2 and Cu coating film 3.\n\nNext, a Ni coating film of 1 μm in thickness was formed on the surface of the magnet test piece by Ni strike plating (under the same conditions as that described in Example 1), and a Cu coating film of 4 μm in thickness was formed further thereon by Cu pulse plating (under the same conditions as that described in Example 1). Furthermore, in the same plating bath, an application of electric current in pulsed waveform was switched to applying continuous electric current, to thereby form a Cu coating film of 4 μm in thickness on the surface thereof by Cu continuous current-applying electric plating (under the same conditions as that described in Example 1). FIG. 2 is a cross section FE-SEM photograph (magnification: 8,500 times) showing the vicinity of a boundary between the Cu coating film formed by pulse plating and the Cu plating film formed by continuous current-applying electric plating, which are constituent coating films of the multilayered metal coating film of 9 μm in total thickness and formed in the manner above on the surface of the magnet test piece. FIG. 2 clearly shows that the Cu coating film formed by pulse plating comprises, in at least a part, randomly distributed multilayered structure constructed by the presence of the grain boundaries of platy crystals, and that the platy crystals are in flattened shape, approximately 1 μm to 10 μm in major axis, 10 nm to 300 nm in thickness, and 10 to 1000 in aspect ratio. Furthermore, the magnet test piece was drawn out from the plating solution at the stage the Cu coating film was formed by Cu pulse plating on the surface of the Ni coating film, and the surface thereof was subjected to FE-SEM photographing after etching it for several tens of seconds by using a 1:1 mixed acid of nitric acid and acetic acid. It was thereby confirmed that platy crystals were present on the surface (see FIG. 3, magnification: 40,000 times). Such a structure of the Cu coating film formed by pulse plating is also believed to contribute to the excellent hydrogen shielding property of the coating film. The following reasons can be mentioned as the reason for above. That is, it was assumed that, when solid solubility for hydrogen reaches a maximum, a hydrogen flux occurs along the depth direction, but because the platy crystals prevents the flux at each grain boundary, the gradual lowering of hydrogen concentration with respect to the external hydrogen gas pressure is further enhanced, and finally, hydrogen molecules are effectively shielded from reaching the surface of the magnet test piece. Furthermore, it was predicted that the random multilayered structure effectively suppresses the generation of penetrated pinholes, and this was also assumed to function effectively in exhibiting hydrogen shielding property.\n\nExample 2\n\nUnder the same plating conditions as those of Example 1, a Ni coating film of 1 μm in thickness was formed on the surface of the magnet test piece by Ni strike plating, and a Cu coating film of 8 μm in thickness was formed further thereon by Cu pulse plating. Furthermore, in the same plating bath, an application of electric current in pulsed waveform was switched to applying continuous electric current, to thereby form a Cu coating film of 10 μm in thickness on the surface thereof by Cu continuous current-applying electric plating.\n\nThus obtained five magnet test pieces (samples) each having a multilayered metal coating film of 19 μm in total thickness on the surface thereof were subjected to pressurized hydrogen test at 60° C. under 1 MPa, and the time elapsed to disrupt the sample was measured. As a result, no sample disruption occurred even after 2000 hours from the starting of the test.\n\nExample 3\n\nUnder the plating conditions below, a Cu coating film of 1 μm in thickness was formed on the surface of the magnet test piece by Cu strike plating (Process step 1), and under the same plating conditions as those of Process steps 2 and 3 of Example 1, a Cu coating film of 8 μm in thickness was formed further thereon by Cu pulse plating. Furthermore, in the same plating bath, an application of electric current in pulsed waveform was switched to applying continuous electric current, to thereby form a Cu coating film of 27 μm in thickness on the surface thereof by Cu continuous current-applying electric plating.\n\nProcess Step 1: Cu Strike Plating\n\nBath compositionCopper sulfate pentahydrate0.06 mol/L1-Hydroxyethylidene-1,1-diphosphonic acid0.15 mol/LPotassium pyrophosphate0.2 mol/LBath temperature60° C.pH10 (adjusted with sodium hydroxide)Current density1 A/dm2Retention methodRack\n\nThus obtained five magnet test pieces (samples) each having a multilayered metal coating film of 36 μm in total thickness on the surface thereof were subjected to pressurized hydrogen test at 60° C. under 1 MPa, and the time elapsed to disrupt the sample was measured. As a result, no sample disruption occurred even after 2000 hours from the starting of the test.\n\nExample 4\n\nA Cu coating film of 1 μm in thickness was formed on the surface of the magnet test piece by Cu strike plating under the same plating conditions as that of Process step 1 of Example 3, and under the plating conditions below, a Cu coating film of 8 μm in thickness was formed further thereon by Cu pulse plating (Process step 2). Furthermore, in the same plating bath, an application of electric current in pulsed waveform was switched to applying continuous electric current, to thereby form a Cu coating film of 27 μm in thickness on the surface thereof by Cu continuous current-applying electric plating (Process step 3).\n\nProcess Step 2: Cu Pulse Plating\n\nBath compositionCopper sulfate pentahydrate0.3 mol/L1-Hydroxyethylidene-1,1-diphosphonic acid0.5 mol/LPotassium pyrophosphate0.2 mol/LBath temperature60° C.pH10 (adjusted withsodium hydroxide)CDmax20 A/dm2CDmin0 A/dm2Ton1 msToff9 msRetention methodRack\n\n\n\nProcess Step 3: Cu Continuous Current-Applying Electric Plating\n\nBath composition, bath temperature, and pH are the same as those used in Cu pulse plating (the same plating bath was used).\n\nCurrent density 1 A/dm2 \n\nRetention method Rack\n\nThus obtained five magnet test pieces (samples) each having a multilayered metal coating film of 36 μm in total thickness on the surface thereof were subjected to pressurized hydrogen test at 60° C. under 1 MPa, and the time elapsed to disrupt the sample was measured. As a result, no sample disruption occurred even after 2000 hours from the starting of the test.\n\nExample 5\n\nA tin (Sn) coating film of 5 μm in thickness was formed by semibright Sn plating on the outermost surface of the magnet test piece prepared in Example 2, having on the surface thereof a multilayered metal coating film of 19 μm in total thickness. The semibright Sn plating was carried out by using SOFT ALLOY GTC-21 (commercial', '技术领域\n\n本发明涉及赋予各种类型的制品如稀土金属基永磁体耐氢性的方法。\n\n背景技术\n\n作为防止归因于CO2排放的全球变暖的手段，氢气燃料正引起关注。今天，作为迄今为止依赖于环境技术的石油和煤燃料（化石燃料）的替代品，并且已经积极地开展了使用氢气作为燃料的各种系统的发展，例如发电，冷却和储存。在开发这种系统的适当时期，由于磁体是磁体，因此预计将扩大稀土金属基永磁体的应用，例如由Nd-Fe-B基永磁体代表的R-Fe-B基永磁体。由资源丰富且具有优异磁特性的低成本材料制成，并且如果嵌入用于供应或输送氢气的循环电动机和磁传感器中，它们可以实现低成本的紧凑系统。\n\n在考虑使用氢气作为燃料在现场扩展稀土金属基永磁体的应用的情况下，磁体在使用期间应具有耐氢气性以抵抗高氢气压力的环境。然而，考虑到例如基于R-Fe-B的永磁体的情况，磁体具有高的氢吸收率，这是因为该磁体是通过使用氢气加压破碎来细分磁粉的过程而制造的。 。因此，在使用磁体的环境中存在氢气的情况下，可以假设氢气压力可以是100kPa或更高的环境，而不管环境是单独由氢气构成还是由氢气形成。氢气和其他气体的混合气体;在这种情况下，存在这样的问题：如果不能给磁体提供足够的耐氢性，磁体可能吸收氢并由于R与氢的反应而变脆，从而导致氢化物的形成或放热反应，最后以磁铁的破坏结束。\n\n作为赋予稀土金属系永磁体耐氢性的方法，例如，提出了根据下述专利文献1的方法，该方法包括在磁体的表面上形成Cu涂膜，并进一步形成其表面是由比Cu更碱的金属制成的金属涂膜，例如Ni涂膜。然而，该方法仅仅是用于防止磁体吸收在磁体表面上形成金属涂层膜期间产生的氢气的方法。因此，这种层状结构的简单采用不足以赋予在高氢气压力环境如100kPa或更高的压力下使用的磁体的耐氢性。特别地，在氢被扩散并且反复放出到金属涂膜的环境中，存在这样的问题，即引起涂膜的起泡和剥落的产生，从而导致磁体的突然破裂。和早期的金属涂膜，以及磁铁的破坏。进一步根据下面的专利参考文献2，提出了一种方法，该方法包括在磁体的表面上形成具有4层或更多层Ni涂层膜和Cu涂层膜的多层金属涂层膜。如果Cu涂膜的厚度占总膜厚的30％或更多，则构成涂膜的总膜厚度在15μm至70μm的范围内。然而，该方法存在诸如磁体的有效体积减小和成本增加的问题。\n\n专利参考文献1：JP-A-5-29119\n\n专利参考文献2：JP-A-2003-166080\n\n发明内容\n\n本发明要解决的问题\n\n因此，本发明的目的是提供一种简单且低成本的方法，用于赋予各种类型的制品如稀土金属基永磁体优异的耐氢性。\n\n解决问题的手段\n\n鉴于上述情况，本发明人进行了广泛的研究，最后，他发现通过脉冲电镀形成的金属涂膜显示出优异的氢屏蔽性能。\n\n基于上述发现，实现了对本发明制品赋予耐氢性的方法，在第一实施方案中，其特征在于在制品表面上通过脉冲电镀形成金属涂膜。\n\n此外，赋予第二实施方案的制品耐氢性的方法是赋予第一实施方案的制品耐氢性的方法，其中金属涂膜是Cu涂膜。\n\n此外，赋予第三实施方案的制品耐氢性的方法是赋予第二实施方案的制品耐氢性的方法，其中通过使用含有0.03mol / L至1.0的电镀液形成金属涂膜。 mol / L硫酸铜，0.05mol / L至1.5mol / L乙二胺四乙酸，和0.1mol / L至1.0mol / L选自酒石酸盐和柠檬酸盐中的至少一种，pH值调节至从10.0到13.0。\n\n此外，第四实施方案的赋予制品耐氢性的方法是如第三实施方案那样赋予制品耐氢性的方法，其中电镀液还含有0.02mol / L至1.0mol / L的硫酸钠。 。\n\n此外，赋予第五实施方案的制品耐氢性的方法是赋予第二实施方案的制品耐氢性的方法，其中通过使用含有0.03mol / L至1.0的电镀液形成金属涂膜。 mol / L硫酸铜，0.05mol / L至1.5mol / L的1-羟基亚乙基-1,1-二膦酸，和0.01mol / L至1.5mol / L的至少一种选自焦磷酸盐和多磷酸盐，将pH调节至8.0至11.5。\n\n此外，第六实施方案的赋予制品耐氢性的方法是赋予第一实施方案的制品耐氢性的方法，其中在金属涂膜的表面上进一步形成防腐蚀涂膜。\n\n此外，在第七实施方案中，本发明的耐氢制品的特征在于通过脉冲电镀在其表面上形成金属涂膜。\n\n此外，第八实施方案的耐氢制品是第七实施方案的耐氢制品，其中金属涂膜在其至少一部分中具有由板状晶体的晶界的存在构成的多层结构。\n\n此外，第九实施方案的耐氢制品是第八实施方案的耐氢制品，其中片状晶体相对于（111）面和（311）面具有优选的取向。\n\n此外，第十实施方案的耐氢制品是第七实施方案的耐氢制品，其中制品是稀土金属基永磁体。\n\n此外，在第十一实施方案中，本发明的耐氢制品的特征在于在其表面上形成金属涂膜，该金属涂膜至少具有由于板状晶体的晶界存在而构成的多层结构。 。\n\n发明效果\n\n根据本发明，可以提供一种简单且低成本的方法，用于赋予各种类型的制品如稀土金属基永磁体优异的耐氢性。\n\n附图的简要说明\n\n图。图1是根据本发明的实施例的Cu涂膜1至Cu涂膜3的（111）面和（220）面的极坐标图。\n\n图。图2是根据本发明的实施例的多层Cu涂膜的局部横截面的FE-SEM照片。\n\n图。图3是根据本发明的实施例的通过脉冲电镀形成的Cu涂膜的部分表面的FE-SEM照片。\n\n具体实施方式\n\n赋予本发明制品耐氢性的方法的特征在于通过在制品表面上进行脉冲电镀形成金属涂膜。作为构成通过脉冲电镀形成的金属涂膜的金属物质，可以提及Cu，Sn，Zn，Ag和含有它们的合金，但是其中特别优选的是具有优异的氢屏蔽性能的Cu。因为如果单独使用，Sn易于产生晶须并且Zn是从耐腐蚀性的观点来看具有限制的贱金属，所以在选择Sn或Zn的情况下应该采取预防措施。\n\n在选择Cu作为构成通过脉冲电镀在易于腐蚀的制品的表面上形成的金属涂膜的金属物质的情况下，例如稀土金属基永磁体，Cu涂层膜优选通过使用含有0.03mol / L至1.0mol / L硫酸铜，0.05mol / L至1.5mol / L乙二胺四乙酸和0.1mol / L至1.0mol / L至少一种的电镀液形成选自酒石酸盐（例如钠盐和钾盐）和柠檬酸盐（例如钠盐和钾盐），将pH调节至10.0至13.0的范围。与氰化铜浴不同，电镀液不含有青色或其他对环境有害的化学成分，或者与焦磷酸盐浴不同，电镀液中不含大量游离铜离子，导致表面取代电镀反应。文章容易被腐蚀，因此不容易形成Cu涂膜，其粘合强度较差。更优选的镀液含有0.05mol / L至0.5mol / L的硫酸铜，0.08mol / L至0.8mol / L的乙二胺四乙酸，和0.1mol / L至1.0mol / L的至少一种选择的来自酒石酸盐（如上所述）和柠檬酸盐（如上所述），将pH调节至11.0至13.0的范围。此外，电镀液可以另外含有0.02mol / L至1.0mol / L的硫酸钠，从而可以有效地形成Cu涂膜而没有不均匀性。如果添加量低于0.02mol / L，则由于电镀液的电导率降低，担心会降低Cu析出效率。另一方面，如果添加量超过1.0mol / L，则担心更容易在Cu涂膜上形成不均匀性。另外，也可以在0.01mol / L~1.0mol / L的氨基醇化合物中添加电镀液例如乙醇胺，或甘氨酸，聚乙二醇等作为络合剂。在以下几点中添加这种络合剂是有利的。即，即使在电镀液中产生游离铜离子，也会形成络合物以抑制由于游离铜离子的存在而引起的取代电镀反应，从而有效地防止形成具有较差粘合强度的Cu涂膜。此外，由于在阴极处抑制了氧化亚铜的产生，因此有效地防止了粗糙Cu涂膜的形成。\n\n在选择Cu作为构成通过脉冲电镀在易于腐蚀的制品的表面上形成的金属涂膜的金属物质的情况下，例如稀土金属基永磁体，Cu涂膜可以是通过使用含有0.03mol / L至1.0mol / L硫酸铜，0.05mol / L至1.5mol / L的1-羟基亚乙基-1,1-二膦酸盐的电镀液作为上述以外的电镀液而形成酸，和0.01mol / L至1.5mol / L的至少一种选自焦磷酸盐（如钠盐和钾盐）和多磷酸盐（如钠盐和钾盐），pH值调节至8.0到11.5。此外，为了通过平滑溶解，增加临界电流密度或降低电镀应力来防止阳极钝化，可以向电镀液中加入0.1mol / L至1.0mol / L的电镀液，例如酒石酸盐（如钠盐和钾盐），柠檬酸盐（如钠盐和钾盐）和草酸盐（如钠盐和钾盐）。\n\n优选地，可以进行脉冲电镀，例如在通过使用上述电镀溶液形成Cu涂膜的情况下，通过施加脉冲波形的电流，其中最大电流密度（CDmax）在1A / A的范围内。 dm2至40 A / dm2，最小电流密度（CDmin）在0 A / dm2至5A / dm2范围内，同时保持最大电流密度值（Ton）的持续时间为0.1 ms至10 ms且最小电流密度值（Toff）的持续时间为0.5ms至10ms，并且浴温为30℃至70℃。通过采用这样的条件，可以获得具有优异耐氢性的Cu涂膜。具有优异的外观，没有表面燃烧等。\n\n通过脉冲电镀形成的金属涂膜的厚度优选为3μm或更厚。如果膜厚度小于3μm，则担心不足以表现出耐氢性。膜厚度的上限没有特别限制，但是在制品是稀土金属基永磁体的情况下，从确保磁体的有效体积或抑制压力的观点来看，优选设定为20μm。成本。\n\n通过在通过脉冲电镀形成的金属涂膜的表面上进一步形成防腐蚀涂膜，可以更可靠地赋予制品耐氢性。防腐蚀涂膜的厚度优选为1μm或更厚。如果膜厚度小于1μm，则担心不能充分发挥形成涂膜的效果。作为防腐蚀涂膜，优选具有优异耐氢性的金属涂膜，例如Cu，Sn，Zn，Ag和含有它们的合金，以及硬质且显示出优异性的DLC膜（类金刚石碳膜）。在该物品是稀土金属基永磁体并且该磁体用于诸如IPM的电动机的情况下，适合于防止产生瑕疵的气体屏蔽性能。在通过脉冲电镀形成的金属涂膜的表面上形成的防腐蚀涂膜优选通过连续电流施加电镀形成而不用以脉冲波形或干电镀施加电流。这是因为，在通过脉冲电镀形成的金属涂膜与形成在其表面上的防腐蚀涂膜之间的边界处形成不连续平面进一步提高了氢屏蔽性能。在通过脉冲电镀形成的金属涂膜和在其表面上形成的防腐蚀涂膜使用相同金属种类的情况下，可以通过首先在脉冲波形中施加电流，然后切换到在单个电镀槽中施加连续电流。此外，通过脉冲电镀形成的金属涂膜可以直接形成在制品的表面上，或者预先形成在制品表面上形成的下层涂膜的表面上;例如，根据已知方法通过触击电镀或普通电镀。\n\n在通过脉冲电镀形成的金属涂膜的表面上进一步形成防腐蚀涂膜的情况下，或者在制品表面上形成的下层涂膜的表面上通过脉冲电镀形成金属涂膜，在制品是稀土金属基永磁体的情况下，从确保磁体表面形成的总膜厚度优选为50μm或更小，更优选为40μm或更小。有效的磁铁体积或抑制成本。\n\n本发明不仅适用于在高氢气压力环境中使用的稀土金属基永磁体，而且适用于需要耐氢性的任何制品。\n\n例子\n\n以下通过实施例和比较例更详细地解释本发明，但应理解，本发明不限于此。实施例和比较例通过使用长39mm，宽20mm，高3mm的烧结磁体进行，组成为14Nd-0.5Dy-7B-Fe（余量）（以％计）（在下文中简称为“磁体测试件”，其根据例如美国专利No.4,522,588中描述的方法制备。美国专利号4,770,723和4,792,368;即，通过粉碎已知的铸锭，然后对所得粉末进行压制，烧结，热处理和表面加工。\n\n例1\n\n通过Ni触击电镀（工艺步骤1）在磁体测试片的表面上形成厚度为1μm的镍（Ni）涂层膜，并且通过其进一步形成厚度为8μm的铜（Cu）涂层膜。 Cu脉冲电镀（工艺步骤2）。此外，在相同的镀浴中，将脉冲波形中的电流施加切换为施加连续电流，从而通过Cu连续电流施加电镀在其表面上形成27μm厚的Cu涂膜（工艺）步骤3）。电镀条件如下。\n\n工艺步骤1：Ni Strike电镀\n\n浴液组合物六水硫酸镍六水合物130 g / L（0.49 mol / L）氯化铵15 g / L（0.28 mol / L）柠檬酸二铵60 g / L（0.27 mol / L）硼酸15 g / L（0.24 mol / L）硫酸钠35 g / L（0.25 mol / L）浴温50°C.pH6.5（用28％氨水调节）电流密度0.3 A / dm2保留方法\n\n\n\n工艺步骤2：Cu脉冲电镀\n\n浴液组合物硫酸铜五水合物0.3mol /二乙基乙二胺四乙酸0.5mol /硫酸钠0.5mol / LD酒石酸钠0.1mol /乙醇胺0.1mol / LBath温度60℃C.pH11.5（用氢氧化钠调节）CDmax20 A / dm2CDmin0 A / dm2Ton1 msToff9 msRetention methodRack\n\n工艺步骤3：Cu连续电流施加电镀\n\n浴组合物，浴温和pH与Cu脉冲电镀（使用相同的电镀浴）中使用的相同。\n\n电流密度1 A / dm2\n\n保留方法Rack\n\n由此获得的四个磁体测试片（样品）各自在其表面上具有总厚度为36μm的多层金属涂膜，在60℃下在1MPa下进行加压氢测试，并且破坏样品所经过的时间是测量。结果，即使在测试开始2000小时后也没有发生样品破坏。\n\n比较例1\n\n通过Ni触击电镀（在与实施例1中所述相同的条件下）在磁体测试片的表面上形成1μm厚的Ni涂膜，并在其上进一步形成厚度为35μm的Cu涂膜。通过Cu连续电流施加电镀（在与实施例1中所述相同的条件下）。由此获得的两个磁体测试片（样品）各自在其表面上具有总厚度为36μm的多层金属涂膜，在60℃下在1MPa下进行加压氢测试，并且破坏样品所经过的时间是测量。结果，两个样品在测试开始34小时后被破坏。\n\n分析与讨论：\n\n从实施例1和比较例1可以清楚地看出，尽管提供了相同总厚度的涂膜，但是根据是否存在通过脉冲电镀形成的Cu涂膜，耐氢性差别很大。本发明人如下分析和讨论了上述结果。\n\n由于氢分子中的平衡核间距离r0小至r0 = 0.074nm，如果涂膜中存在缺陷，即使它应该是大约几微米的针孔，氢分子也容易到达表面。文章通过缺陷。此外，尽管取决于反向材料的类型，氢分子是如此活泼以至于它们容易在固体表面上吸附和离解。通过氢分子的离解产生的原子氢甚至更小，因此它可以结合到分子或晶体中并且容易在晶体内扩散。为了防止这种氢分子到达制品表面，防止氢分子侵入涂膜内部是至关重要的。从这样的观点出发，通过在其表面上形成多层金属涂膜来赋予制品耐氢性的方法如公开的那样。专利参考文献1和专利参考文献2旨在通过消除从外部穿透到制品表面的针孔来确保氢屏蔽性。然而，通常用作形成多层金属涂膜的组成涂膜的Ni涂膜，因为它具有高流平性，易于在其表面上吸附和解离氢分子，并且易于被入侵。原子氢。此外，Ni涂膜存在这样的问题，即由于其对氢具有相对高的固溶度，因此在氢的固溶度达到最大值之后沿着深度方向（朝向制品表面的方向）发生大的氢通量。\n\n另一方面，与Ni涂膜不同，Cu涂膜的氢屏蔽性能基本上优异，因为氢分子在其表面上的吸附和离解较少，并且对氢的固溶度相对较小。但是，上述结果表明除了Cu涂膜的基本性质之外，还存在与氢屏蔽性有关的因素。因此，详细分析了通过脉冲电镀形成的Cu涂膜，以获得从未报道过的有价值的发现。\n\n首先，通过Ni涂膜在磁体试验片的表面上形成厚度为8μm的Cu涂膜（Cu涂膜1）的（111）面和（220）面的晶体取向通过在下面给出的条件下通过X射线衍射获得的极性图研究了通过进行实施例1中的方法步骤1和2的1μm厚度。同时，以与上述类似的方式在8μm厚的Cu涂膜（Cu涂膜2）上研究晶体取向，其通过Ni涂膜1形成在磁体测试片的表面上。除了在电流密度为1A / dm2的Cu脉冲电镀中进行Cu连续电流施加电镀之外，在与Cu涂膜1相同的条件下进行该工艺的厚度为μm;在相同条件下，通过厚度为1μm的Ni涂膜，在厚度为1μm的Cu涂膜上形成厚度为8μm的Cu涂膜（Cu涂膜3），该涂膜厚度为1μm。对于Cu涂膜1，除了在Cu脉冲电镀的位置以0.2A / dm 2的电流密度进行Cu连续电流施加电镀并且使用机筒代替使用机架作为保持方法。\n\n功率输出45 kV-40 mATargetCo-KαTime/ step1 s步长宽度5°（φ）和5°（φ角度）φ：0°至85°，φ：0°至355°对称平面（111）平面：2θ= 50.82°（220）平面：2θ= 88.95°\n\n图3中示出了Cu涂膜1，Cu涂膜2和Cu涂膜3中的每一个的（111）面和（220）面的极坐标图。图1。图1清楚地表明，对于Cu涂膜2和Cu涂膜3，没有观察到（111）反射和（220）反射的取向的明显差异，但是对于Cu涂膜1，观察到关于（111）的不同的优选取向。反射。此外，相对于与（111）反射成60°角的平面观察到明显的优选取向。由于Cu晶体是立方体，因此形成约60°至（111）面的角度的平面可以是（211）面和（311）面为立方体。因此，分别进行2θ-θ扫描以研究（211）平面和（311）平面中的任一个对应于观察平面形成约60°至（111）平面的角度，并且发现是（311）反射。 Cu涂膜1显示出相对于（111）面和（311）面的优选取向的事实也通过Cu涂膜1的单独截取的FE-SEM照片证实。基于这些发现，已经假设Cu涂膜1显示出优异的氢屏蔽性的原因在于，特殊的晶体取向显示出相对于（111）面和（311）面的优选取向，这与Cu涂膜2和Cu的晶体取向不同涂膜3。\n\n接下来，通过Ni触击电镀（在与实施例1中所述相同的条件下）在磁体测试片的表面上形成1μm厚的Ni涂膜，并形成厚度为4μm的Cu涂膜。其上通过Cu脉冲电镀（在与实施例1中所述相同的条件下）。此外，在相同的镀浴中，将脉冲波形中的电流施加切换为施加连续电流，从而通过Cu连续电流施加电镀在其表面上形成4μm厚的Cu涂膜（下与实施例1）中描述的条件相同。图。图2是表示通过脉冲电镀形成的Cu涂膜与通过连续电流施加电镀形成的Cu电镀膜之间的边界附近的FE-SEM照片（倍率：8500倍）的截面图，其是作为构成的涂膜。总厚度为9μm的多层金属涂膜并且以上述方式在磁体测试件的表面上形成。图。图2清楚地表明，通过脉冲电镀形成的Cu涂层膜至少部分地包括由板状晶体的晶界的存在构成的随机分布的多层结构，并且板状晶体为扁平形状，约1μm至长轴10μm，厚度10nm至300nm，纵横比10至1000。此外，在Ni涂膜表面上通过Cu脉冲电镀形成Cu涂膜的阶段从电镀溶液中拉出磁体测试片，并且在蚀刻它之后对其表面进行FE-SEM照相。使用硝酸和乙酸的1：1混合酸进行数十秒钟。由此证实在表面上存在板状晶体（参见图3，放大倍数：40,000倍）。通过脉冲电镀形成的这种Cu涂层膜的结构也被认为是有贡献的对涂膜的优异的氢屏蔽性能。可以提及以下原因作为上述原因。也就是说，假设当氢的固溶度达到最大值时，沿深度方向出现氢通量，但由于板状晶体阻止了每个晶界的通量，因此氢浓度相对于外部逐渐降低氢气压力进一步增强，最后，氢分子被有效地屏蔽而不会到达磁体测试片的表面。此外，预测随机多层结构有效地抑制了穿透针孔的产生，并且还假设这在显示氢屏蔽性能方面有效地起作用。\n\n例2\n\n在与实施例1相同的电镀条件下，通过Ni触击电镀在磁体试验片的表面上形成1μm厚的Ni涂膜，并且通过其进一步形成厚度为8μm的Cu涂膜。铜脉冲电镀。此外，在相同的镀浴中，将脉冲波形中的电流施加切换为施加连续电流，从而通过Cu连续电流施加电镀在其表面上形成10μm厚的Cu涂膜。\n\n由此获得的五个磁体测试片（样品）各自在其表面上具有总厚度为19μm的多层金属涂膜，在60℃下在1MPa下进行加压氢测试，并且破坏样品所经过的时间是测量。结果，即使在测试开始2000小时后也没有发生样品破坏。\n\n例3\n\n在下面的电镀条件下，通过Cu触击电镀（工艺步骤1）在与磁体测试片的表面上形成1μm厚的Cu涂膜，并且在与工艺步骤2和3相同的电镀条件下，实施例1中，通过Cu脉冲电镀在其上进一步形成厚度为8μm的Cu涂膜。此外，在相同的镀浴中，将脉冲波形中的电流施加切换为施加连续电流，从而通过Cu连续电流施加电镀在其表面上形成厚度为27μm的Cu涂层膜。\n\n工艺步骤1：铜冲击电镀\n\n浴液组合物硫酸铜五水合物0.06mol / L1-羟基亚乙基-1,1-二膦酸0.15mol /焦磷酸钾0.2mol / LBath温度60℃C.pH10（用氢氧化钠调节）电流密度1 A / dm2保留方法\n\n由此获得的五个磁体测试片（样品）各自在其表面上具有总厚度为36μm的多层金属涂膜，在60℃下在1MPa下进行加压氢测试，并且破坏样品所经过的时间是测量。结果，即使在测试开始2000小时后也没有发生样品破坏。\n\n例4\n\n通过Cu触击电镀在与实施例3的工艺步骤1相同的电镀条件下，在磁体试验片的表面上形成厚度为1μm的Cu涂膜，并且在下面的电镀条件下，Cu涂膜通过Cu脉冲电镀在其上进一步形成8μm厚（工艺步骤2）。此外，在相同的镀浴中，将脉冲波形中的电流施加切换为施加连续电流，从而通过Cu连续电流施加电镀在其表面上形成27μm厚的Cu涂膜（工艺）步骤3）。\n\n工艺步骤2：Cu脉冲电镀\n\n浴组合物硫酸铜五水合物0.3mol / L1-羟基亚乙基-1,1-二膦酸0.5mol /焦磷酸钾0.2mol / LBath温度60℃C.pH10（用氢氧化钠调节）CDmax20 A / dm2CDmin0 A / dm2Ton1 msToff9 ms保留方法\n\n\n\n工艺步骤3：Cu连续电流施加电镀\n\n浴组合物，浴温和pH与Cu脉冲电镀（使用相同的电镀浴）中使用的相同。\n\n电流密度1 A / dm2\n\n保留方法Rack\n\n由此获得的五个磁体测试片（样品）各自在其表面上具有总厚度为36μm的多层金属涂膜，在60℃下在1MPa下进行加压氢测试，并且破坏样品所经过的时间是测量。结果，即使在测试开始2000小时后也没有发生样品破坏。\n\n例5\n\n通过半导体Sn电镀在实施例2中制备的磁体测试片的最外表面上形成厚度为5μm的锡（Sn）涂层膜，在其表面上具有总厚度为19μm的多层金属涂层膜。通过使用SOFT ALLOY GTC-21（C.Uyemura＆Co.，Ltd。的市售产品）在30℃的浴温，2A / dm2的电流密度下进行半平面Sn电镀，并且通过使用机架保留。\n\n由此获得的五个磁体测试片（样品）在其表面上各自具有总厚度为24μm的多层金属涂膜，在60℃和1MPa下进行加压氢测试，并且破坏样品所经过的时间是测量。结果，即使在测试开始2000小时后也没有发生样品破坏。\n\n例6\n\n通过Cu触击电镀在与实施例3的工艺步骤1相同的电镀条件下，在磁体试验片的表面上形成1μm厚的Cu涂膜，并且在下面的电镀条件下，Cu涂膜通过Cu脉冲电镀在其上进一步形成8μm厚（工艺步骤2）。此外，在下面的电镀条件下，通过Cu连续电流施加电镀在其表面上形成厚度为20μm的Cu涂膜（工艺步骤3）。\n\n工艺步骤2：Cu脉冲电镀\n\n浴液组合物硫酸铜五水合物0.3mol / L1-羟基亚乙基-1,1-二膦酸0.5mol /焦磷酸钾0.5mol / LD酒石酸钠0.1mol / LBath温度60℃C.pH10（用氢氧化钠调节）CDmax5 A / dm2CDmin0 A / dm2Ton4 msToff6 msRetention methodRack\n\n工艺步骤3：Cu连续电流施加电镀\n\n浴液组成焦磷酸盐0.25mol /焦磷酸钾0.19 mol / LAmmonia2 mL / LBath温度60°C.pH8.6（用氢氧化钾调节）电流密度3 A / dm2保留方法\n\n由此获得的五个磁体测试片（样品）各自在其表面上具有总厚度为29μm的多层金属涂膜，在60℃下在1MPa下进行加压氢测试，并且破坏样品所经过的时间是测量。结果，即使在测试开始2000小时后也没有发生样品破坏。\n\n工业实用性\n\n本发明具有工业实用性，其提供了一种简单且低成本的方法，用于赋予各种类型的制品如稀土金属基永磁体优异的耐氢性。');
INSERT INTO `os_patent_instruction_text` VALUES (13049, 22878, '【技術分野】\n\n【0001】\n\n本発明は、希土類系永久磁石をはじめとする各種の物品への耐水素性付与方法に関する。\n\n【背景技術】\n\n【0002】\n\n今日、環境技術関連におけるCO2による地球温暖化の防止策として、これまでに依存してきた石油·石炭燃料(化石燃料)に替わる水素ガス燃料が注目されており、水素ガスを燃料として用いた発電·冷蔵·貯蔵などの各種システムの開発が精力的に行われている。このようなシステムの開発を行うに当たり、Nd-Fe-B系永久磁石に代表されるR-Fe-B系永久磁石などの希土類系永久磁石は、資源的に豊富で安価な材料から構成されていることや高い磁気特性を有することから、水素ガスの供給や移送のために用いる循環モータや磁気センサに組み込むなどすれば、安価で小型のシステムとすることができるので、大いにその用途展開に期待が持たれている。\n\n水素ガスを燃料として用いる分野への希土類系永久磁石の用途展開を考えた場合、磁石には、高い水素ガス圧の環境においても使用に耐えうるだけの耐水素性が要求される。しかしながら、例えば、R-Fe-B系永久磁石をとって考えると、この磁石は、その製造工程中で水素ガスを用いた磁粉の加圧粉砕による微細化が行われることからも明らかなように、高い水素吸蔵性を有している。従って、磁石が用いられる環境に水素ガスが存在する場合、その環境が水素ガスのみによって形成されているか、水素ガスとその他のガスとの混合ガスによって形成されているかを問わず、水素ガス圧が100kPa以上といったような環境を想定すると、磁石に十分な耐水素性を付与しておかなければ、磁石が水素吸蔵を起こしてRと水素が反応することで水素化合物を形成したり発熱したりして脆化し、最終的には磁石が崩壊してしまうといった事態を招くという問題がある。\n\n【0003】\n\n希土類系永久磁石に耐水素性を付与する方法としては、例えば、下記の特許文献1にて、磁石の表面にCu被膜を形成し、さらにその表面にNi被膜などのCuよりも卑な金属からなる金属被膜を形成する方法が提案されている。しかしながら、この方法は、磁石の表面に金属被膜を形成する際に発生する水素ガスを磁石が吸蔵することを抑制するための方法に過ぎない。従って、単に上記の積層構造を採用したということだけでは、100kPa以上といったような高い水素ガス圧の環境においては磁石の耐水素性は十分ではなく、特に金属被膜への水素の拡散と放出が繰り返されるような環境では、被膜の膨れや剥離などの発生を招き、早期に磁石と金属被膜が一気に破裂して崩壊するといったような問題を有する。また、下記の特許文献2にて、磁石の表面に、Ni被膜とCu被膜を構成被膜\n\nとする4層以上の多層金属被膜であって、全膜厚が15μm〜70μmであり、そのうちCu被膜の膜厚が全膜厚の30%以上である被膜を形成する方法が提案されている。しかしながら、この方法は、磁石の有効体積の低下やコスト上昇を招来するといったような問題を有する。\n\n【特許文献1】特開平5-29119号公報\n\n【特許文献2】特開2003-166080号公報\n\n【発明の開示】\n\n【発明が解決しようとする課題】\n\n【0004】\n\nそこで本発明は、希土類系永久磁石をはじめとする各種の物品に優れた耐水素性を簡便にかつ低コストで付与する方法を提供することを目的とする。\n\n【課題を解決するための手段】\n\n【0005】\n\n本発明者は上記の点に鑑み鋭意検討を行った結果、パルスめっきによって形成された金属被膜が優れた水素遮断性を発揮することを見出した。\n\n【0006】\n\n上記の知見に基づいてなされた本発明の物品への耐水素性付与方法は、請求項1記載の通り、物品の表面にパルスめっきによって少なくともその一部に板状結晶の結晶粒界の存在による積層構造を有するCu被膜を形成した後、連続通電めっきによってその表面にさらに耐食性被膜を形成し、パルスめっきによって形成したCu被膜とその表面に形成した耐食性被膜の界面に不連続面を形成することを特徴とする。\n\n  また、請求項2記載の耐水素性付与方法は、請求項1記載の耐水素性付与方法において、硫酸銅を0.03mol/L〜1.0mol/L、エチレンジアミン四酢酸を0.05mol/L〜1.5mol/L、酒石酸塩およびクエン酸塩から選ばれる少なくとも1種を0.1mol/L〜1.0mol/L含有し、pHが10.0〜13.0に調整されためっき液を用いて形成することを特徴とする。\n\nまた、請求項3記載の耐水素性付与方法は、請求項2記載の耐水素性付与方法において、さらに硫酸ナトリウムを0.02mol/L〜1.0mol/L含有するめっき液を用いて形成することを特徴とする。\n\nまた、請求項4記載の耐水素性付与方法は、請求項1記載の耐水素性付与方法において、硫酸銅を0.03mol/L〜1.0mol/L、1-ヒドロキシエチリデン-1,1-ジホスホン酸を0.05mol/L〜1.5mol/L、ピロリン酸塩およびポリ燐酸塩から選ばれる少なくとも1種を0.01mol/L〜1.5mol/L含有し、pHが8.0〜11.5に調整されためっき液を用いて形成することを特徴とする。\n\n  また、本発明の耐水素性物品は、請求項5記載の通り、パルスめっきによって少なくともその一部に板状結晶の結晶粒界の存在による積層構造を有するCu被膜が表面に形成された後、連続通電めっきによってその表面にさらに耐食性被膜が形成され、パルスめっきによって形成されたCu被膜とその表面に形成された耐食性被膜の界面に不連続面が形成されてなることを特徴とする。\n\n  また、請求項6記載の耐水素性物品は、請求項5記載の耐水素性物品において、板状結晶が(111)面と(311)面に対して優先配向してなるものであることを特徴とする。\n\nまた、請求項7記載の耐水素性物品は、請求項5記載の耐水素性物品において、物品が希土類系永久磁石であることを特徴とする。\n\nまた、本発明の耐水素性物品は、請求項8記載の通り、少なくともその一部に板状結晶の結晶粒界の存在による積層構造を有するCu被膜が表面に形成された後、連続通電めっきによってその表面にさらに耐食性被膜が形成され、Cu被膜とその表面に形成された耐食性被膜の界面に不連続面が形成されてなることを特徴とする。\n\n【発明の効果】\n\n【0007】\n\n本発明によれば、希土類系永久磁石をはじめとする各種の物品に優れた耐水素性を簡便にかつ低コストで付与する方法を提供することができる。\n\n【図面の簡単な説明】\n\n【0008】\n\n【図1】実施例におけるCu被膜1〜Cu被膜3についての(111)面と(220)面に対する極図形である。\n\n【図2】実施例における積層Cu被膜の部分的断面FE-SEM写真である。\n\n【図3】実施例におけるパルスめっきによって形成したCu被膜の部分的表面FE-SEM写真である。\n\n【発明を実施するための最良の形態】\n\n【0009】\n\n本発明の物品への耐水素性付与方法は、物品の表面にパルスめっきによって金属被膜を形成することを特徴とするものである。パルスめっきによって形成する金属被膜を構成する金属種としては、Cu、Sn、Zn、Ag、これらを含む合金などが挙げられるが、中でも水素遮断性に優れるCuが望ましい。Snはウイスカーが発生しやすく、Znは卑な金属なので単独では耐食上の制約があることから、SnやZnを選択する場合にはこれらの点に注意を払う必要がある。\n\n【0010】\n\nパルスめっきによって形成する金属被膜を構成する金属種としてCuを選択し、希土類系永久磁石のような腐食しやすい物品の表面にCu被膜を形成する場合、Cu被膜は、例えば、硫酸銅を0.03mol/L〜1.0mol/L、エチレンジアミン四酢酸を0.05mol/L〜1.5mol/L、酒石酸塩(ナトリウム塩やカリウム塩など)およびクエン酸塩(ナトリウム塩やカリウム塩など)から選ばれる少なくとも1種を0.1mol/L〜1.0mol/L含有し、pHが10.0〜13.0に調整されためっき液を用いて形成することが望ましい。このめっき液は、シアン化銅浴におけるシアンのような環境に悪影響を及ぼす化学成分を含まず、ピロリン酸浴のように遊離銅イオンを多く含むことで腐食しやすい物品の表面で置換めっき反応を引き起こし、密着性に劣るCu被膜を形成させやすいといったことがないからである。より好適なめっき液としては、硫酸銅を0.05mol/L〜0.5mol/L、エチレンジアミン四酢酸を0.08mol/L〜0.8mol/L、酒石酸塩(同上)およびクエン酸塩(同上)から選ばれる少なくとも1種を0.1mol/L〜1.0mol/L含有し、pHが11.0〜13.0に調整されためっき液が挙げられる。なお、めっき液には、形成むらがないCu被膜を効率よく形成するために、硫酸ナトリウムを0.02mol/L〜1.0mol/L添加してもよい。添加量が0.02mol/L未満であるとめっき液の導電率が低下することでCuの析出効率が悪くなる恐れがある一方、添加量が1.0mol/Lを超えると形成されるCu被膜に形成むらが生じやすくなる恐れがある。また、めっき液には、エタノールアミンなどのアミノアルコール化合物やグリシンやポリエチレングリコールなどを錯化剤として0.01mol/L〜1.0mol/L添加してもよい。このような錯化剤を添加することには次のような利点がある。即ち、めっき液中で遊離銅イオンが生成しても、錯体形成することで遊離銅イオンの存在による置換めっき反応を抑制して密着性に劣るCu被膜が形成されることを効果的に防止することができる。また、陰極での亜酸化銅の生成を抑制することができるので、粗なCu被膜が形成されることを効果的に防止することができる。\n\n【0011】\n\nパルスめっきによって形成する金属被膜を構成する金属種としてCuを選択し、希土類系永久磁石のような腐食しやすい物品の表面にCu被膜を形成する場合、Cu被膜は、上記のめっき液以外のめっき液として、硫酸銅を0.03mol/L〜1.0mol/L、1-ヒドロキシエチリデン-1,1-ジホスホン酸を0.05mol/L〜1.5mol\n\n/L、ピロリン酸塩(ナトリウム塩やカリウム塩など)およびポリ燐酸塩(ナトリウム塩やカリウム塩など)から選ばれる少なくとも1種を0.01mol/L〜1.5mol/L含有し、pHが8.0〜11.5に調整されためっき液を用いて形成してもよい。なお、めっき液には、陽極の溶解をスムーズにしてその不働態化を防止するためや、限界電流密度を高めるためや、めっき応力を低減するために、酒石酸塩(ナトリウム塩やカリウム塩など)やクエン酸塩(ナトリウム塩やカリウム塩など)やシュウ酸塩(ナトリウム塩やカリウム塩など)などを0.1mol/L〜1.0mol/L添加してもよい。\n\n【0012】\n\nパルスめっきは、例えば、Cu被膜を上記のめっき液を用いて形成する場合、最大電流密度(CDmax)1A/dm2〜40A/dm2、最小電流密度(CDmin)0A/dm2〜5A/dm2、最大電流密度値の継続時間(Ton)0.1ms〜10ms、最小電流密度値の継続時間(Toff)0.5ms〜10msといったパルス波形の電流を用い、浴温30℃〜70℃で行うことが望ましい。このような条件を採用することにより、耐水素性に優れるとともに表面焦げなどがなく外観にも優れるCu被膜を形成することができる。\n\n【0013】\n\nパルスめっきによって形成する金属被膜の膜厚は3μm以上とすることが望ましい。膜厚が3μm未満であると耐水素性が十分に発揮されない恐れがあるからである。なお、膜厚の上限は特段限定されるものではないが、物品が希土類系永久磁石の場合においては、磁石の有効体積の確保やコスト抑制などの観点から、20μmとすることが望ましい。\n\n【0014】\n\nパルスめっきによって形成する金属被膜の表面にさらに耐食性被膜を形成することで物品への耐水素性付与をより確実なものとすることができる。耐食性被膜の膜厚は1μm以上とすることが望ましい。膜厚が1μm未満であると形成することの効果が十分に発揮されない恐れがあるからである。耐食性被膜としては、耐水素性に優れるCu、Sn、Zn、Ag、これらを含む合金などからなる金属被膜や、硬くてガス遮断性に優れるDLC被膜(Diamond Like Carbon被膜:物品が希土類系永久磁石の場合であって当該磁石をIPMなどのモータに適用する際の傷つき防止に好適である)が望ましい。パルスめっきによって形成する金属被膜の表面に形成する耐食性被膜は、パルス波形の電流を用いない連続通電めっきや乾式めっきによって形成することが望ましい。パルスめっきによって形成する金属被膜とその表面に形成する耐食性被膜の界面に不連続面を形成することで水素遮断性が向上するからである。パルスめっきによって形成する金属被膜とその表面に形成する耐食性被膜を同一の金属種で構成する場合、1つのめっき浴中でパルス波形による通電を行った後、連続通電に切り替えるようにすれば工程の簡略化が可能となる。また、パルスめっきによって形成する金属被膜は、物品の表面に直接形成してもよいし、例えば、物品の表面に予め自体公知の方法でストライクめっきや通常めっきを行って下層被膜を形成してからその表面に形成してもよい。\n\n【0015】\n\nパルスめっきによって形成する金属被膜の表面にさらに耐食性被膜を形成したり、パルスめっきによって形成する金属被膜を物品の表面に形成した下層被膜の表面に形成したりする場合であって、物品が希土類系永久磁石の場合においては、磁石の有効体積の確保やコスト抑制などの観点から、磁石の表面に形成する被膜の合計膜厚は50μm以下とすることが望ましく、40μm以下とすることがより望ましい。\n\n【0016】\n\nなお、本発明は、高い水素ガス圧の環境において用いられる希土類系永久磁石の他、耐水素性が要求されるあらゆる物品に対して適用することができる。\n\n【実施例】\n\n【0017】\n\n以下、本発明を実施例と比較例によってさらに詳細に説明するが、本発明はこれに限定して解釈されるものではない。なお、以下の実施例と比較例は、例えば、米国特許4770723号公報や米国特許4792368号公報に記載されているようにして、公知の鋳\n\n造インゴットを粉砕し、微粉砕後に成形、焼結、熱処理、表面加工を行うことによって得られた14Nd-0.5Dy-7B-残Fe組成(at%)の縦39mm×横20mm×高さ3mm寸法の焼結磁石(以下、磁石体試験片と称する)を用いて行った。\n\n【0018】\n\n実施例1:\n\n磁石体試験片の表面にストライクNiめっきを行って膜厚が1μmのNi被膜を形成した(工程1)後、その表面にパルスCuめっきを行って膜厚が8μmのCu被膜を形成した(工程2)。さらに、同じめっき浴中でパルス波形による通電から連続通電に切り替え、その表面に連続通電Cuめっきを行って膜厚が27μmのCu被膜を形成した(工程3)。それぞれのめっき条件は次の通りである。\n\n【0019】\n\n工程1:ストライクNiめっき\n\n液組成      硫酸ニッケル·6水和物    130g/L(0.49mol/L)\n\n塩化アンモニウム            15g/L(0.28mol/L)\n\nクエン酸二アンモニウム      60g/L(0.27mol/L)\n\nホウ酸                      15g/L(0.24mol/L)\n\n硫酸ナトリウム              35g/L(0.25mol/L)\n\n液温        50℃\n\npH        6.5(28%アンモニア水にて調整)\n\n電流密度    0.3A/dm2\n\n保持形態    ラック\n\n【0020】\n\n工程2:パルスCuめっき\n\n液組成      硫酸銅·5水和物                      0.3mol/L\n\nエチレンジアミン四酢酸二ナトリウム    0.5mol/L\n\n硫酸ナトリウム                        0.5mol/L\n\n酒石酸二ナトリウム                    0.1mol/L\n\nエタノールアミン                      0.1mol/L\n\n液温        60℃\n\npH        11.5(水酸化ナトリウムにて調整)\n\nCDmax20A/dm2\n\nCDmin0A/dm2\n\nTon 1ms\n\nToff9ms\n\n保持形態    ラック\n\n【0021】\n\n工程3:連続通電Cuめっき\n\n液組成と液温とpHはパルスCuめっきのものと同じ(同じめっき浴を使用)\n\n電流密度    1A/dm2\n\n保持形態    ラック\n\n【0022】\n\nこうして製作した表面に合計膜厚が36μmの積層金属被膜を有してなる磁石体試験片(サンプル)4個に対し、60℃×1MPaでの水素加圧試験を行い、サンプルが崩壊するまでの時間を測定した。その結果、いずれのサンプルも試験開始から2000時間経過後も崩壊しなかった。\n\n【0023】\n\n比較例1:\n\n磁石体試験片の表面にストライクNiめっきを行って膜厚が1μmのNi被膜を形成した(条件は実施例1に記載のものと同じ)後、その表面に連続通電Cuめっきを行って膜厚が35μmのCu被膜を形成した(条件は実施例1に記載のものと同じ)。こうして製\n\n作した表面に合計膜厚が36μmの積層金属被膜を有してなる磁石体試験片(サンプル)2個に対し、60℃×1MPaでの水素加圧試験を行い、サンプルが崩壊するまでの時間を測定した。その結果、いずれのサンプルも試験開始から34時間経過後に崩壊した。\n\n【0024】\n\n分析と考察:\n\n実施例1と比較例1から明らかなように、パルスめっきによって形成したCu被膜の存在の有無により、同じ合計膜厚でも耐水素性が大きく異なることがわかった。以上の結果についての本発明者の分析と考察は次の通りである。\n\n水素分子は、平衡核間距離がr0=0.074nmと非常に小さいので、被膜に欠陥が存在した場合、たとえ欠陥が数μm程度のピンホールであっても、当該箇所から容易に物品の表面に到達してしまう。また、水素分子は、相手材料種にもよるが、反応性に富み、固体表面で吸着解離しやすい。水素分子から解離して生成した原子状水素はさらに小さいため、分子や結晶中に入り込むことを可能にし、結晶中で容易に拡散する。このような性質を有する水素分子が物品の表面に到達することを阻止するためには、被膜内部への水素分子の侵入を阻止することが肝要である。特許文献1や特許文献2に記載の、物品の表面に多層金属被膜を形成することによる耐水素性付与方法は、以上のような観点から、外部から物品の表面に至る貫通ピンホールをなくすことで水素遮断性を確保することを目的としている。しかしながら、レベリング性が比較的高いことから、通常、多層金属被膜を形成する際に構成被膜として採用されるNi被膜は、その表面で水素分子が吸着解離しやすいために原子状水素が被膜内部に侵入しやすい性質を有する。また、Ni被膜は、水素固溶度が比較的大きいので、水素固溶量が限界に達した後における深さ方向(物品の表面方向)への水素流束の程度が大きいという問題がある。\n\nこれに対し、Cu被膜は、その表面で水素分子が吸着解離しにくく、水素固溶度も比較的小さいため、Ni被膜とは異なり本質的に水素遮断性に優れるが、以上の結果は、Cu被膜の本質的な特性以外にも水素遮断性に関与する要因が存在することを意味する。そこで、パルスめっきによって形成したCu被膜を詳細に分析したところ、これまでに報告された例がない特筆すべき知見が得られた。\n\n【0025】\n\nまず、実施例1における工程1と工程2を行うことで、磁石体試験片の表面に膜厚が1μmのNi被膜を介して形成した膜厚が8μmのCu被膜(Cu被膜1)について、その(111)面と(220)面に対する結晶配向性を次の条件によるX線回折での極図形から調べた。この際、パルスCuめっきの代わりに電流密度1A/dm2での連続通電Cuめっきを行うこと以外はCu被膜1を形成する条件と同じ条件で行うことで、磁石体試験片の表面に膜厚が1μmのNi被膜を介して形成した膜厚が8μmのCu被膜(Cu被膜2)、パルスCuめっきの代わりに電流密度0.2A/dm2での連続通電Cuめっきを行うことと保持形態をラックの代わりにバレルとしたこと以外はCu被膜1を形成する条件と同じ条件で行うことで、磁石体試験片の表面に膜厚が1μmのNi被膜を介して形成した膜厚が8μmのCu被膜(Cu被膜3)についてもあわせて同様の結晶配向性を調べた。\n\n【0026】\n\n出力                  45kV-40mA\n\nターゲット            Co-Kα\n\ntime/step    1s\n\nステップ幅            ψに対して5°、φに対して5°\n\n範囲                  ψ:0°〜85°、φ:0°〜355°\n\n対称面                (111)面:2θ=50.82°\n\n(220)面:2θ=88.95°\n\n【0027】\n\nCu被膜1、Cu被膜2、Cu被膜3の各々についての(111)面と(220)面に対する極図形を図1に示す。図1から明らかなように、Cu被膜2とCu被膜3とでは、\n\n(111)面と(220)面との間に顕著な配向の差異は認められなかったが、Cu被膜1については、(111)面に対して顕著な優先配向が認められた。また、(111)面と約60°の角度を有する面に対する顕著な優先配向も認められた。Cu結晶は立方晶であるが、立方晶で(111)面と約60°の角度を有する面は(211)面と(311)面であるところ、別途の2θ-θスキャンを行い、(111)面と約60°の角度を有するこの面が(211)面か(311)面かを調べた結果、(311)面であることがわかった。Cu被膜1が(111)面と(311)面に対して優先配向していることは、別途のCu被膜1の断面FE-SEM写真からも確認することができた。以上の知見から、Cu被膜1が水素遮断性に優れるのは、Cu被膜2とCu被膜3の結晶配向性とは異なって、(111)面と(311)面に対して優先配向する特異な結晶配向性が寄与しているものと考えられた。\n\n【0028】\n\n次に、磁石体試験片の表面にストライクNiめっきを行って膜厚が1μmのNi被膜を形成した(条件は実施例1に記載のものと同じ)後、その表面にパルスCuめっきを行って膜厚が4μmのCu被膜を形成した(条件は実施例1に記載のものと同じ)。さらに、同じめっき浴中でパルス波形による通電から連続通電に切り替え、その表面に連続通電Cuめっきを行って膜厚が4μmのCu被膜を形成した(条件は実施例1に記載のものと同じ)。こうして磁石体試験片の表面に形成した合計膜厚が9μmの積層金属被膜の、パルスめっきによって形成したCu被膜と連続通電めっきによって形成したCu被膜の界面付近の断面FE-SEM写真(倍率8500倍)を図2に示す。図2から明らかなように、パルスめっきによって形成したCu被膜は、少なくともその一部に板状結晶の結晶粒界の存在による積層構造をランダムに有してなり、板状結晶の形状は、概ね、長径が1μm〜10μm、厚さが10nm〜300nm、アスペクト比が10〜1000の偏平形状であることがわかった。また、Ni被膜の表面にパルスCuめっきを行ってCu被膜を形成した段階で磁石体試験片をめっき液から引き上げ、その表面を硝酸:酢酸=1:1の混酸を用いて数十秒間エッチングしてからFE-SEM写真を撮影することで、その表面に板状結晶が存在することを確認した(図3参照:倍率40000倍)。パルスめっきによって形成したCu被膜が有するこのような構造もまた、当該被膜が優れた水素遮断性を発揮することに寄与しているものと考えられた。その理由としては次のような理由が挙げられた。即ち、Cu被膜の水素固溶量が限界に達した後は深さ方向への水素流束を生じるが、板状結晶が結晶粒界毎に流束を阻止することで、もともと水素濃度が外部の水素ガス圧に比較して徐々に低くなることをより増強し、最終的に磁石体試験片の表面への水素分子の到達を効果的に遮断しているからであると考えられた。また、ランダムな積層構造によって、貫通ピンホールの生成が効果的に抑制されていると予想され、この点も水素遮断性の発揮に有効に作用していると考えられた。\n\n【0029】\n\n実施例2:\n\n実施例1と同じめっき条件で、磁石体試験片の表面にストライクNiめっきを行って膜厚が1μmのNi被膜を形成した後、その表面にパルスCuめっきを行って膜厚が8μmのCu被膜を形成し、さらに、同じめっき浴中でパルス波形による通電から連続通電に切り替え、その表面に連続通電Cuめっきを行って膜厚が10μmのCu被膜を形成した。\n\n【0030】\n\nこうして製作した表面に合計膜厚が19μmの積層金属被膜を有してなる磁石体試験片(サンプル)5個に対し、60℃×1MPaでの水素加圧試験を行い、サンプルが崩壊するまでの時間を測定した。その結果、いずれのサンプルも試験開始から2000時間経過後も崩壊しなかった。\n\n【0031】\n\n実施例3:\n\n以下のめっき条件で、磁石体試験片の表面にストライクCuめっきを行って膜厚が1μmのCu被膜を形成した(工程1)後、実施例1の工程2および工程3と同じめっき条件\n\nで、その表面にパルスCuめっきを行って膜厚が8μmのCu被膜を形成し、さらに、同じめっき浴中でパルス波形による通電から連続通電に切り替え、その表面に連続通電Cuめっきを行って膜厚が27μmのCu被膜を形成した。\n\n【0032】\n\n工程1:ストライクCuめっき\n\n液組成      硫酸銅·5水和物                      0.06mol/L\n\n1-ヒドロキシエチリデン-1,1-ジホスホン酸\n\n0.15mol/L\n\nピロリン酸カリウム                    0.2mol/L\n\n液温        60℃\n\npH        10(水酸化ナトリウムにて調整)\n\n電流密度    1A/dm2\n\n保持形態    ラック\n\n【0033】\n\nこうして製作した表面に合計膜厚が36μmの積層金属被膜を有してなる磁石体試験片(サンプル)5個に対し、60℃×1MPaでの水素加圧試験を行い、サンプルが崩壊するまでの時間を測定した。その結果、いずれのサンプルも試験開始から2000時間経過後も崩壊しなかった。\n\n【0034】\n\n実施例4:\n\n実施例3の工程1と同じめっき条件で、磁石体試験片の表面にストライクCuめっきを行って膜厚が1μmのCu被膜を形成した後、以下のめっき条件で、その表面にパルスCuめっきを行って膜厚が8μmのCu被膜を形成し(工程2)、さらに、同じめっき浴中でパルス波形による通電から連続通電に切り替え、その表面に連続通電Cuめっきを行って膜厚が27μmのCu被膜を形成した(工程3)。\n\n【0035】\n\n工程2:パルスCuめっき\n\n液組成      硫酸銅·5水和物                      0.3mol/L\n\n1-ヒドロキシエチリデン-1,1-ジホスホン酸\n\n0.5mol/L\n\nピロリン酸カリウム                    0.2mol/L\n\n液温        60℃\n\npH        10(水酸化ナトリウムにて調整)\n\nCDmax20A/dm2\n\nCDmin0A/dm2\n\nTon 1ms\n\nToff9ms\n\n保持形態    ラック\n\n【0036】\n\n工程3:連続通電Cuめっき\n\n液組成と液温とpHはパルスCuめっきのものと同じ(同じめっき浴を使用)\n\n電流密度    1A/dm2\n\n保持形態    ラック\n\n【0037】\n\nこうして製作した表面に合計膜厚が36μmの積層金属被膜を有してなる磁石体試験片(サンプル)5個に対し、60℃×1MPaでの水素加圧試験を行い、サンプルが崩壊するまでの時間を測定した。その結果、いずれのサンプルも試験開始から2000時間経過後も崩壊しなかった。\n\n【0038】\n\n実施例5:\n\n実施例2において製作した表面に合計膜厚が19μmの積層金属被膜を有してなる磁石体試験片の最表面に、半光沢Snめっきを行って膜厚が5μmのSn被膜を形成した。半光沢Snめっきは、ソフトアロイGTC-21(上村工業社製の商品名)を使用し、液温30℃、電流密度2A/dm2、ラック保持にて行った。\n\n【0039】\n\nこうして製作した表面に合計膜厚が24μmの積層金属被膜を有してなる磁石体試験片(サンプル)5個に対し、60℃×1MPaでの水素加圧試験を行い、サンプルが崩壊するまでの時間を測定した。その結果、いずれのサンプルも試験開始から2000時間経過後も崩壊しなかった。\n\n【0040】\n\n実施例6:\n\n実施例3の工程1と同じめっき条件で、磁石体試験片の表面にストライクCuめっきを行って膜厚が1μmのCu被膜を形成した後、以下のめっき条件で、その表面にパルスCuめっきを行って膜厚が8μmのCu被膜を形成し(工程2)、さらに、以下のめっき条件で、その表面に連続通電Cuめっきを行って膜厚が20μmのCu被膜を形成した(工程3)。\n\n【0041】\n\n工程2:パルスCuめっき\n\n液組成      硫酸銅·5水和物                      0.3mol/L\n\n1-ヒドロキシエチリデン-1,1-ジホスホン酸\n\n0.5mol/L\n\nピロリン酸カリウム                    0.5mol/L\n\n酒石酸二ナトリウム                    0.1mol/L\n\n液温        60℃\n\npH        10(水酸化ナトリウムにて調整)\n\nCDmax5A/dm2\n\nCDmin0A/dm2\n\nTon 4ms\n\nToff6ms\n\n保持形態    ラック\n\n【0042】\n\n工程3:連続通電Cuめっき\n\n液組成      ピロリン酸銅                          0.25mol/L\n\nピロリン酸カリウム                    0.9mol/L\n\nアンモニア                            2mL/L\n\n液温        60℃\n\npH        8.6(水酸化カリウムにて調整)\n\n電流密度    3A/dm2\n\n保持形態    ラック\n\n【0043】\n\nこうして製作した表面に合計膜厚が29μmの積層金属被膜を有してなる磁石体試験片(サンプル)5個に対し、60℃×1MPaでの水素加圧試験を行い、サンプルが崩壊するまでの時間を測定した。その結果、いずれのサンプルも試験開始から2000時間経過後も崩壊しなかった。\n\n【産業上の利用可能性】\n\n【0044】\n\n本発明は、希土類系永久磁石をはじめとする各種の物品に優れた耐水素性を簡便にかつ低コストで付与する方法を提供することができる点において産業上の利用可能性を有する。', '【技术领域】\n\n【0001】\n\n本发明涉及一种给予包括稀土永磁体的各种制品的耐氢的方法。\n\n发明背景\n\n【0002】\n\n今天,CO在环境技术中2作为预防全球变暖的预防措施,已依赖于现在依赖的氢气燃料,氢气燃料正在引起关注,并且各种系统,如氢气的发电,冷藏和储存,因为燃料开发是能量完成的。为了开发这种系统,稀土基永磁体如ND-Fe-B基永磁体表示的R-Fe-B永磁体由富含富且廉价的材料构成。由于存在高磁性和高磁性特性和高磁性特性,可用作廉价且紧凑的系统,如果它结合到循环电动机或用于供应氢气和磁传感器的磁传感器中,因此它主要预期其应用开发。举行。\n\n当考虑用作燃料的磁场中稀土永磁体的应用开发时,磁体需要具有可承受高氢气压力环境中的耐受性的耐氢。然而,例如,在考虑基于R-Fe-B的永磁体时,该磁铁从磁性粉末使用氢气的氢气在制造过程中进行的事实中也显而易见。高储氢性能。因此,如果在使用磁体的环境中存在氢气,则不使用氢气压力,无论是否通过氢气和其他气体的混合气体形成环境。假设如此100 kPa以上,如果将足够的氢性施加到磁体上,则磁体通过反应R和氢气使储氢形成氢化合物。存在令人尴尬并且最终导致磁铁塌陷的问题。\n\n【0003】\n\n作为赋予耐稀土基永磁体的耐水性的方法,例如,在磁体表面的磁体的表面上形成Cu膜,并且表面进一步由具有金属的金属制成作为Ni涂层。已经提出了一种形成金属膜的方法。然而,该方法仅仅是用于抑制在磁体表面上形成金属膜时产生的氢气的储存的方法。因此,在诸如100kPa或更高的高氢气压力的环境中,磁体的耐氢性不足,并且氢气扩散和氢气释放到金属膜的环境中重复,特别是在高处的环境中重复氢气压力如100kPa或更高。在这种环境中,涂层和剥离等的发生,以及磁铁和金属涂层将在早期伸展并塌陷。此外,在下面的专利文献2中,在磁体的表面上形成Ni涂层和Cu涂层。\n\n形成具有15μm至70μm的整个膜厚度和总膜厚度的膜的方法为15μm至70μm,提出了Cu膜的膜厚度为30%或更高。然而,该方法具有减少磁铁的有效体积的问题和成本升高。\n\n[专利文献1]日本专利申请公开号5-29119\n\n[专利文献2]日本专利申请公开No.2003-166080\n\n发明的描述\n\n本发明要解决的问题\n\n【0004】\n\n因此,本发明的目的是提供一种简单地应用于包括稀土的永磁体的各种制品的优异防水性的方法。\n\n[解决问题的手段]\n\n【0005】\n\n由于鉴于上述点,因此,发明人发现通过脉冲电镀形成的金属膜具有优异的氢阻隔性。\n\n【0006】\n\n2.根据权利要求1所述的根据权利要求1所述的所述本发明的所述本发明制品的耐水性的方法,所述方法如权利要求1所述的如权利要求1所述的脉冲镀在所述物品表面上所述Cu膜至少部分地具有板状晶粒边界的层压结构形式完成之后,通过连续传导电镀在表面上进一步形成耐腐蚀膜,并且不连续表面形成在通过脉冲镀层形成的Cu涂层和形成在表面上的耐腐蚀涂层的表面之间的界面处。它的特点是。\n\n魔鬼索赔2光栅耐水性的方法1在防水性耐受方法中,0.03mol / L至1.0mol / L和乙二胺四乙酸选自0.05mol / L至1.5mol / L,酒石酸盐和柠檬酸盐0.1摩尔0.1mol / L-1.0mol / L含量,和将pH调节至10.0至13.0并使用电镀溶液形成。\n\n还,3光栅耐水性的方法2在所述防水性耐耐水性耐耐水性耐水性方法中,其特征在于,使用含有0.02mol / L至1.0mol / L硫酸钠的电镀溶液形成。\n\n还,4光栅耐水性的方法1在耐水性耐受性,0.03mol / L至1.0mol / L,1-羟基乙基-1,1-二膦酸,硫酸铜为0.05mol / L至1.5mol / L,焦磷酸盐和多磷酸盐,其特征在于从0.01mol / L至1.5mol / L中选择的至少一种,并将pH调节至8.0至11.5并使用电镀溶液形成。。\n\n魔鬼本发明的防水制品5如脉冲电镀所描述的Cu膜至少部分地具有板状晶粒边界的层压结构形成在表面上之后,通过连续传导电镀在表面上进一步形成耐腐蚀膜,并且在由脉冲镀层形成的Cu涂层和形成在表面上形成的耐腐蚀涂层之间的界面处形成不连续的表面。它的特点是。\n\n魔鬼索赔6描述的防水物品5在所描述的耐抗性制品中,板状晶体的特征在于(111)平面相对于(311)平面优先取向。\n\n还,7描述的防水物品5在所述防水制品中,制品是稀土永磁体。\n\n另外,本发明的防水制品是8如上所述,通过至少部分地存在板状晶粒界限具有层压结构Cu涂层形成在表面上之后,通过连续传导电镀在表面上进一步形成耐腐蚀膜,并且在Cu涂层和在其表面上形成的耐腐蚀涂层之间形成不连续的表面。它的特点是。\n\n【发明效果】\n\n【0007】\n\n根据本发明,可以提供一种简单地将具有稀土永磁体的各种制品施加优异的水的方法。\n\n[简要描述;简介]\n\n【0008】\n\n图。图1是用于(111)平面和(220)平面的电极图形形状,在一个实施方案中用于Cu涂覆1至Cu涂层3。\n\n图。图2是实施方案中的层叠Cu涂层的局部横截面Fe-SEM照片。\n\n图。图3是在一个实施例中通过脉冲电镀形成的Cu涂层的局部表面Fe-SEM照片。\n\n实施本发明的最佳方式\n\n【0009】\n\n本发明制品的耐氢方法的特征在于,通过脉冲电镀在物品的表面上形成金属膜。构成由脉冲镀层形成的金属膜的金属物质的实例包括Cu,Sn,Zn,Ag,含有这些的合金等,特别是Cu优选优选在氢堵塞性中优异。 SN可能发生在晶须中,Zn是一种窄的金属,因此当单独选择Sn和Zn时,必须注意这些点,因为存在耐腐蚀限制。\n\n【0010】\n\n选择Cu作为构成由脉冲镀形成的金属涂层的金属物质时,形成Cu涂层,例如Cu涂层,例如,在形成Cu膜/ L至1.0mol / L时,乙二胺四乙酸,例如,硫酸铜铜涂层。酸为0.05mol / l至1.5mol / l,至少一种选自酒石酸盐(如钠盐,钾盐等)和柠檬酸盐(钠盐和钾盐),希望含有0.1mol / l至1.0 Mol / L,pH调节至10.0至13.0,并且希望使用电镀溶液形成。该电镀溶液不含化学成分,其产生不利地影响氰化物氰化物的环境,并通过包括许多游离铜离子如焦磷酸盐浴,易于腐蚀的制品表面上的替换电镀反应。这是因为它不容易形成a Cu涂层差不多粘附。一种更优选的电镀溶液选自0.05mol / L至0.5mol / L,硫酸铜,0.08mol / L至0.8mol / L,酒石酸盐(上述)和柠檬酸盐(与上述相同)。含有0.1mol / l至1.0mol / l,并​​将pH调节至11.0至13.0至13.0℃并提及电镀溶液。另外,为了有效地形成不具有均匀性的Cu涂层,可以加入0.02mol / L至1.0mol / L的电镀溶液。当添加量小于0.02 mol / L时,可以降低电镀溶液的导电性,而Cu的沉淀效率可能会劣化,并且添加量形成为超过1.0mol /升。穆拉可能很可能发生。此外,在电镀溶液中,可以将氨基醇化合物如乙醇胺,甘氨酸,聚乙二醇等作为络合剂加入0.01mol / L至1.0mol / L.添加这种络合剂具有以下优点。也就是说,即使在电镀溶液中产生游离铜离子,有效地防止了复杂的形成,使得抑制了脱铜离子存在的Cu涂层以形成粘附性下劣质的Cu涂层。能够。另外,由于可以抑制阴极处的氧化铜的形成,因此可以有效地防止粗铜涂层。\n\n【0011】\n\nWhen Cu is selected as the metal species constituting the metal film formed by pulsed plating, Cu coatings are plated other than the above plating solution To a solution, a copper sulfate is 0.03 mol / L to 1.0 mol / L, 1-hydroxyethylidene-1 ,1-二膦酸0.05mol / l至1.5摩尔\n\n0.01mol / L至1.5mol / l为0.01mol / l至1.5mol / l选自/ L,焦磷酸盐(如钠盐,钾盐)和多磷酸盐(如钠盐和钾盐)和pH是8.0至11.5。可以使用电镀液调节以形成。另外,通过平滑地溶解阳极以防止其不渗透率,并增加极限电流密度,并降低电镀应力,用钠(如钠盐和钾盐)0.1mol / l至1.0mol / l来平滑地溶液。可以加入0.1mol / L至1.0mol / L,例如柠檬酸盐(如钠盐,钾盐)和草酸盐(如钠盐,钾盐)和草酸盐(如钠盐,钾盐)。\n\n【0012】\n\n例如,使用上述电镀溶液形成Cu涂层时,脉冲镀层是最大电流密度(CD)max1a / dm.2〜40A / DM2,最小电流密度(CDmin0a / dm.2〜5A / DM2,最大电流密度值的持续时间(ton持续时间为0.1ms至10ms,最小电流密度值(toff期望在30℃至70℃的浴温下执行脉冲波形的电流,例如0.5ms至10ms至10ms。通过采用这种条件,可以形成耐氢性和优异的表面燃烧等的Cu涂层。\n\n【0013】\n\n期望通过脉冲镀层形成的金属涂层的膜厚度为3μm以上。这是因为当膜厚度小于3μm时,可能无法充分表现出耐水性。尽管膜厚度的上限没有特别限制,但是希望从固定磁铁的有效体积的观点来设定20μm,并且在稀土基永磁体的情况下。\n\n【0014】\n\n通过在通过脉冲镀层形成的金属涂层表面上形成耐腐蚀膜,可以更可靠地制成制品的耐氢。希望耐腐蚀膜的膜厚度为1μm以上。这是因为形成膜厚度小于1μm的形成的效果是不充分表现出的。作为耐腐蚀涂层,由Cu,Sn,Zn,Ag制成的金属涂层和含有这些的合金,以及由耐氢耐抗性的合金制成的硬质和气体阻挡性能优异的DLC涂层(如碳涂层(如碳涂层)的金刚石:在壳体的情况下,一种稀土的永磁体,当施加磁铁到诸如IPM的电机时,希望损坏损坏。期望通过连续导通电镀和干镀形成在由脉冲镀层形成的金属涂层的表面上形成耐腐蚀膜,而没有脉冲波形的电流。这是因为通过在通过脉冲镀层形成的金属涂层之间的界面处形成不连续表面和形成在其表面上的耐腐蚀膜来改善氢阻隔性。当通过脉冲镀层形成的金属涂层和在表面上形成的耐腐蚀膜制成相同的金属物质时,在通过一个电镀浴中的脉冲波形执行功率之后,如果它切换到连续传导,则执行该过程简化是可能的。此外,通过脉冲镀形成的金属涂层可以直接形成在制品的表面上,例如,在制品的表面上的预编织的方法之后,通过本身已知的方法进行正常电镀以形成下层涂层。它可以形成在表面上。\n\n【0015】\n\n当通过脉冲电镀形成的金属涂层的表面进一步形成耐腐蚀膜时,通过脉冲镀层形成的金属膜形成在制品表面上形成的底层涂层的表面上,制品是稀土从固定磁铁的情况下,希望从固定磁体的有效体积的观点来设定在磁体的表面上形成的涂层的总膜厚度,以及在表面上形成的涂层的表面磁体,优选为40μm或更小。\n\n【0016】\n\n除了高氢气压力环境中使用的稀土永磁体之外,本发明还可以应用于耐水性所需的任何物品。\n\n【例子】\n\n【0017】\n\n在下文中,将通过实施例和比较例更详细地描述本发明,但是本发明不限于此。在以下实施例和比较例中,例如,如美国专利No.4,522,517中所述,例如,如美国专利No.美国专利号4,770,723和美国专利No.美国专利号4,792,368\n\n通过在细磨后形成,烧结,热处理和表面处理来粉碎和获得粉碎锭,并且垂直39mm×宽20mm×高度为3mm尺寸的烧结磁体(下文中称为磁体试验片)被使用。\n\n【0018】\n\n例1:\n\n在磁体试验片的表面上进行触发,形成具有1μm的膜厚度的Ni膜(步骤1),在表面上进行脉冲Cu电镀,以形成具有8的膜厚度的Cu涂层。 μm(过程2)。此外,在相同的电镀浴中,它通过脉冲波形切换到从电源的连续导通,并且在表面上进行连续导电Cu电镀,以形成膜厚度为27μm的Cu膜(步骤3)。每个电镀条件如下。\n\n【0019】\n\n第1步:罢工Ni电镀\n\n水合物130g / L(0.49mol / L)液体组合物硫酸盐\n\n氯化铵15g / L(0.28mol / L)\n\n二甘铵柠檬酸盐60克/升(0.27mol / L)\n\n15g / l硼酸(0.24 mol / l)\n\n硫酸钠35克/升(0.25mol / L)\n\n液体温度50°C\n\npH6.5(在28%氨水中调整)\n\n电流密度0.3A / DM2\n\n持有形式的机架\n\n【0020】\n\n第2步:脉冲Cu电镀\n\n硫酸盐和5水合物0.3 mol / l\n\n乙二胺四乙酸二钠0.5 mol / l\n\n硫酸钠0.5mol / l\n\n丘甲酸二钠0.1 mol / l\n\n乙醇胺0.1 mol / l\n\n液体温度60°C\n\npH 11.5(由氢氧化钠调节)\n\n光盘max20A / DM.2\n\n光盘min0a / dm.2\n\nT.on 1女士\n\nT.off9岁女士\n\n持有形式的机架\n\n【0021】\n\n步骤3:连续电荷Cu电镀\n\n液体组合物和液体温度和pH与脉冲Cu电镀的pH相同(使用相同的绗缝浴)\n\n电流密度1A / DM2\n\n持有形式的机架\n\n【0022】\n\n在60℃下的氢气压力试验×1MPa在以这种方式产生的表面上,通过膜厚度为36μm的层压金属膜,并进行60℃×1MPa的氢气压力测试,样本被破坏。测量时间。结果,即使在测试后的测试开始后,所有样品也没有崩溃。\n\n【0023】\n\n比较例1:\n\n在磁体试验片的表面上进行撞击Ni电镀,以形成具有1μm的膜厚度的Ni膜(条件与第一实施例中描述的条件相同),并且对其进行连续的传导Cu电镀形成表面和膜厚度A35μMCu涂层(条件与实施例1中描述的条件相同)。因此\n\n在60℃下的氢气压力测试×1MPa在两个磁体试验片(样品)上进行,其中层叠金属膜在待制备的表面上具有36μm的总膜厚度,并且在测量样品塌陷之前。结果,所有样品在测试开始后34小时后倒塌。\n\n【0024】\n\n分析和考虑:\n\n从实施例1和比较例1中明显看出,由于通过脉冲镀层形成的Cu涂层的存在,耐氢性即使在相同的总膜厚度也很大地不同。本发明人的上述结果的分析和讨论如下。\n\n氢分子是平衡核之间的距离0由于它与0.074nm非常小,如果涂层中存在缺陷,即使缺陷约为几μm,也可以从该点容易地达到物品的表面。此外,尽管氢分子的分子取决于型材料物质,但它富含反应性并易于吸附在固体表面上。由于通过从氢分子中解离的原子氢进一步小,因此可以进入分子或晶体并且容易地扩散在晶体中。为了防止具有这种性质的氢分子到达物品的表面,重要的是为了防止氢分子侵入涂层内部。根据专利文献1或专利文献2在制品表面上形成多层金属膜的方法,从上述观点来看,从外面消除了所属物品的渗透销孔的观点来看旨在确保氢阻塞性。然而,由于水平性能相对较高,通常使用作为构成涂层的Ni膜在其表面形成多层金属膜时,容易解离和解离。它具有易于侵入的性质。另外,由于Ni膜具有相对大的氢固溶体,因此在达到氢固溶体的量之后,存在对深度方向(制品的表面方向)的氢气量大的问题。\n\n另一方面,由于Cu涂层难以在表面上解离氢分子,因此氢固溶体也相对较小,因此它在氢阻隔性质中基本优异,但上述结果是Cu。除了必不可少的涂层的性质,这意味着氢阻隔性具有涉及的因素。因此,当详细分析通过脉冲镀层形成的Cu涂层时,可以获得到目前为止尚未报告的描述性查找。\n\n【0025】\n\n首先,通过在第一实施例中执行步骤1和步骤2,在磁体型试验片表面上具有8μm的膜厚度为8μm的Cu涂层为8μm(Cu涂层1),即根据以下条件从X射线衍射的极图检查相对于(111)平面和(220)平面的晶体取向。此时,电流密度1a / dm而不是脉冲cu电镀2通过在与形成Cu膜1的条件下的连续导通Cu电镀在与形成Cu膜1的条件相同的条件下,通过具有1μm厚度的Ni膜形成的膜厚度在磁体型试验片的表面上为8μm。Cu涂层(Cu涂层2),电流密度0.2A / DM而不是脉冲Cu电镀2通过执行连续导通Cu电镀并将保持形式保持为桶而不是齿条,通过执行Cu涂层,膜厚度在磁体样品的表面上是1μm。也相对于Cu检查了类似的晶体取向涂层(Cu涂层3)通过Ni膜形成膜厚度。\n\n【0026】\n\n输出45kV-40mA\n\n目标CO-Kα\n\n时间/步骤1s\n\n步进宽度为φ5°5°\n\n范围ψ:0°至85°,φ:0°至355°\n\n对称性(111)平面:2θ= 50.82°\n\n(220)表面:2θ= 88.95°\n\n【0027】\n\n用于每一个Cu涂层1,Cu涂层2和Cu涂层3的(111)平面和(220)平面的极图示如图1所示,如图1所示,Cu涂层2和Cu涂层3是\n\n尽管在(111)平面和(220)平面之间没有观察到显着的取向差异,但是相对于Cu涂层1的(111)平面观察到显着的优先级取向。另外,还观察到具有(111)的角度和约60°的表面的显着优先级取向。 Cu晶体是立方体,但是具有(111)的角度和大约60°的表面是(211)平面(211)和(311),并且因此执行另一个2θ-θ扫描(111)检查是否具有与平面具有约60°的角度的该表面(211)或(311)表面,发现它是(311)平面。还可以从单独的Cu涂层1的横截面Fe-SEM照片确认Cu涂层1和(311)平面优先考虑的事实。从上述发现,与Cu涂布2和Cu膜3的晶体取向不同,Cu涂层1具有优异的氢气阻滞性,并且(111)平面和(311)平面优先取向。它被认为是晶体方向贡献。\n\n【0028】\n\n接下来,在磁体型试验片的表面上进行撞击Ni镀,形成1μm膜厚度(条件与实施例1中描述的条件相同),并且在表面上进行脉冲Cu电镀。Cu涂层形成具有4μm的膜厚度(条件与实施例1的条件相同)。此外,在相同的电镀浴中,它通过脉冲波形切换到从功率连续通电,并且在表面上进行连续导电Cu电镀以形成膜厚度为4μm的Cu膜(条件相同在实施例1中描述)。因此,在由形成在磁体测试片9μm的表面上的多层膜的脉冲镀层形成的Cu涂层界面附近的横截面,由磁体试验片9μm的表面上形成的多层膜,形成为Cu涂层界面的横截面通过连续传导(本发明的倍率8500倍。如图1所示。如图2所示,通过脉冲镀形成的Cu涂层通过其至少一部分具有层叠结构,并且由于板状晶体的晶界的存在而导致的层叠结构是随机的,并且板状晶体通常发现,主要轴线为1μm至10μm,厚度为10nm至300nm,横向形状为10至1000。另外,在Ni涂层的表面上进行脉冲Cu电镀以形成Cu涂层,从电镀溶液中拉出磁体样本,并且使用硝酸的混合酸蚀刻表面几十秒钟:醋酸= 1:1。通过拍摄Fe-SEM照片,确认表面上存在板状晶体(参见图3:400,000放大率)。通过脉冲电镀形成的Cu涂层具有所具有的这种结构也被认为有助于优异的氢屏障性质的展览。原因是以下原因。也就是说,在Cu涂层的氢固体溶液达到极限之后,发生深度方向的氢气通量,但是在每个晶界的板状晶体块通量,并且氢浓度最初是外部的是它更逐渐低于氢气的氢气压力,最后被认为是通过氢分子的原料到磁体样本的表面而被有效地阻断。另外,预期通过随机层压结构有效地抑制了渗透针孔的产生,并且该点也被认为是有效作用于氢阻隔性能的展览。\n\n【0029】\n\n例2:\n\n在第一实施方式的表面上形成具有在磁体试验片的表面上具有撞击Ni镀的Ni膜的Cu涂层,并且携带膜厚度为8μm的Cu涂层出。另外,在相同电镀浴的表面上形成厚度为10μm的Cu膜,在相同电镀浴的表面进行连续传导Cu电镀。\n\n【0030】\n\n在以这种方式产生的表面上产生的表面在60℃下的氢气压力测试×1MPa以这种方式产生5磁体型试验片(样品),其具有厚度为19μm的层压金属膜,并且样品被破坏直至样品坍塌。测量时间。结果,即使在测试后的测试开始后,所有样品也没有崩溃。\n\n【0031】\n\n例3:\n\n在下面的电镀条件下,在磁体试验片的表面上进行撞击Cu电镀,以形成具有1μm的膜厚度(步骤1)的Cu涂层,与实施例1的步骤2和步骤3相同的电镀条件\n\n另外,在表面上进行脉冲Cu电镀以形成膜厚度为8μm的Cu涂层,另外,通过在相同的电镀浴中通过脉冲波形传导,并且在表面上进行连续的传导Cu电镀。执行连续导通Cu电镀。形成27μm厚的Cu涂层。\n\n【0032】\n\n第1步:罢工Cu电镀\n\n流体组合物硫酸盐和5水合物0.06 mol / L.\n\n1-羟基乙烯-1,1-二膦酸\n\n0.15mol / L.\n\n焦磷酸钾0.2 mol / l\n\n液体温度60°C\n\npH 10(由氢氧化钠调节)\n\n电流密度1A / DM2\n\n持有形式的机架\n\n【0033】\n\n在以这种方式生产的表面上进行60℃×1MPa的氢气压力试验,并在50℃下进行氢气压力测试×1MPa,5,样品被样品中断时间测量。结果,即使在测试后的测试开始后,所有样品也没有崩溃。\n\n【0034】\n\n例4:\n\n在用磁体试验片的表面上的撞击Cu电镀在磁体试验片的表面上进行撞击Cu电镀,并且具有膜厚度为1μm的Cu膜,使用脉冲Cu电镀作为表面下面。形成具有膜厚度的膜厚度的Cu膜(步骤2),进一步地,在相同的电镀浴中从导通切换到连续导通,并且在表面上进行连续的CU电镀,CU薄膜厚度为27μm。形成薄膜(步骤3)。\n\n【0035】\n\n第2步:脉冲Cu电镀\n\n硫酸盐和5水合物0.3 mol / l\n\n1-羟基乙烯-1,1-二膦酸\n\n0.5mol / L.\n\n焦磷酸钾0.2 mol / l\n\n液体温度60°C\n\npH 10(由氢氧化钠调节)\n\n光盘max20A / DM.2\n\n光盘min0a / dm.2\n\nT.on 1女士\n\nT.off9岁女士\n\n持有形式的机架\n\n【0036】\n\n步骤3:连续电荷Cu电镀\n\n液体组合物和液体温度和pH与脉冲Cu电镀的pH相同(使用相同的绗缝浴)\n\n电流密度1A / DM2\n\n持有形式的机架\n\n【0037】\n\n在以这种方式生产的表面上进行60℃×1MPa的氢气压力试验,并在50℃下进行氢气压力测试×1MPa,5,样品被样品中断时间测量。结果,即使在测试后的测试开始后,所有样品也没有崩溃。\n\n【0038】\n\n例5:\n\n在实施例2中制造的表面上具有19μm的层压金属膜的磁体型试验片的最外表面进行半光泽Sn电镀。在实施例2中制造的表面上的膜厚度为19μm。形成。半光泽SN电镀使用软合金GTC-21(由Uemura Industry Co.,Ltd。制造的商品名),液体温度30°C,电流密度2a / dm2,我去了机架保留。\n\n【0039】\n\n在以这种方式生产的表面上进行60℃×1MPa的氢气压力试验,并在60℃下进行氢气压力试验为5,并且样品被样品中断时间测量。结果,即使在测试后的测试开始后,所有样品也没有崩溃。\n\n【0040】\n\n例6:\n\n在用磁体试验片的表面上的撞击Cu电镀在磁体试验片的表面上进行撞击Cu电镀,并且具有膜厚度为1μm的Cu膜,使用脉冲Cu电镀作为表面下面。形成具有8μm的膜厚度的Cu涂层(步骤2),在下面的电镀条件下进一步形成连续的导电Cu电镀,以形成Cu膜的20μm膜厚度(步骤3) 。\n\n【0041】\n\n第2步:脉冲Cu电镀\n\n硫酸盐和5水合物0.3 mol / l\n\n1-羟基乙烯-1,1-二膦酸\n\n0.5mol / L.\n\n焦磷酸钾0.5mol / L.\n\n丘甲酸二钠0.1 mol / l\n\n液体温度60°C\n\npH 10(由氢氧化钠调节)\n\n光盘max5A / DM.2\n\n光盘min0a / dm.2\n\nT.on 4女士\n\nT.off6女士\n\n持有形式的机架\n\n【0042】\n\n步骤3:连续电荷Cu电镀\n\n流体组合物焦磷酸盐0.25 mol / l\n\n焦磷酸钾0.9 mol / l\n\n氨2ml / l\n\n液体温度60°C\n\npH 8.6(由氢氧化钾调整)\n\n电流密度3A / DM2\n\n持有形式的机架\n\n【0043】\n\n在以这种方式生产的表面上进行60℃×1MPa的氢气压力试验,并在60℃下进行氢气压力测试×1MPa,5,样品被样品中断时间测量。结果,即使在测试后的测试开始后,所有样品也没有崩溃。\n\n【工业可用性】\n\n【0044】\n\n本发明的工业可用性在于简单地提供一种方法,其简单地提供对诸如稀土永磁体的各种制品的优异防水的方法。');
INSERT INTO `os_patent_instruction_text` VALUES (13050, 22879, '[0001] Die vorl iegende Erfindung bezieht sich auf Verfahren zum Verleihen von Widerstand gegenüber Wasserstoff für verschiedene Arten vonArtikeln, beispielsweise für einen Seltenerdmetall-Permanentmagneten.\n\nTechnischer Hintergrund\n\n\n\n[0002] Als eine Einrichtung zum Verhindern globaler Erwärmung, welche der CO2-Emission zuzuschreiben ist, ziehen Wasserstoff-Brennstoffeheutzutage die Aufmerksamkeit als Alternativen für Öl und Kohlenkraftstoffe (fossile Kraftstoffe) die Aufmerksamkeit auf sich, die insoweit in Beziehungvon Umgebungstechnologie abhängig sind, und die Entwicklung verschiedener Systeme, beispielsweise Leistungserzeugung, Kühlen und Speicherungunter Verwendung von Wasserstoff als Brennstoffe wurde tatkräftig durchgeführt. In Verpflichtung zur Entwicklung dieser Systeme wird eineErweiterung bei den Anwendungen von Seltenerdmetall-Permanentmagneten, beispielsweise R-Fe-B-Permanentmagneten, die durch einen Nd-Fe-B-Permanentmagneten dargestellt sind, erwartet, da die Magnete aus preiswerten Materialien hergestellt sind, die bei Ressourcen reichlich vorhandensind, und überragende Magneteigenschaften haben, und, wenn sie in Umlaufmotore und Magnetsensoren eingebettet sind, welche beim Liefern oderTransportieren von Wasserstoffgasen verwendet werden, diese preiswerte Kompaktsysteme realisieren können.\n\n\n\n[0003] Im Fall einer Betrachtung der Erweiterung der Anwendung von Seltenerdmetall-Permanentmagneten auf den Gebieten, wo Wasserstoff alsBrennstoff verwendet wird, sollten die Magnete einen Widerstand gegenüber Wasserstoff während Verwendung haben, der einer Umgebung eineshohen Wasserstoffgasdrucks widersteht. Bei Betrachtung eines Falls eines R-Fe-B-Permanentmagneten besitzt beispielsweise der Magnet jedochhohe Wasserstoffabsorptivität, wie aus der Tatsache deutlich wird, dass dieser Magnet über den Prozess eines feinen Teilens von Magnetpulver durchDruckzermalen unter Verwendung von Wasserstoffgas gefertigt wird. In dem Fall folglich, wo Wasserstoff in der Umgebung vorhanden ist, wo derMagnet verwendet wird, kann eine Umgebung angenommen werden, bei der der Wasserstoffgasdruck 100 kPa oder höher sein kann, unabhängigdavon, ob die Umgebung aus Wasserstoffgas alleine besteht oder aus einem Mischgas aus Wasserstoffgas und anderen Gasen gebildet ist; ineinem solchen Fall besteht ein Problem, dass, wenn kein ausreichender Widerstand gegenüber Wasserstoff dem Magnet verliehen werden sollte, derMagnet Wasserstoff absorbieren kann und auf Grund der Reaktion von R mit Wasserstoff spröde wird, wodurch die Bildung von Hydriden oder eineexotermische Reaktion verursacht wird, was schließlich die Zerstörung des Magneten zur Folge hat.\n\n\n\n[0004] Als ein Verfahren zum Verleihen von Widerstand gegenüber Wasserstoff für einen Seltenerdmetall-Permanentmagneten wird beispielsweiseein Verfahren gemäß dem Patent mit der Referenznummer 1 unten vorgeschlagen, welches das Bilden eines Cu-Überzugfilms auf der Oberflächedes Magnets umfasst, und außerdem auf dessen Oberfläche das Bilden eines Metallüberzugfilms, der aus einem Metall mehr als Cu-Basis gebildetist, beispielsweise einem Ni-Überzugfilm. Dieses Verfahren ist jedoch lediglich ein Verfahren, um zu verhindern, dass der Magnet Wasserstoffgasabsorbiert, welches während des Bildens des Metallüberzugfilms auf der Fläche des Magneten erzeugt wird. Folglich ist eine einfache Anwendungeiner derartigen Schichtstruktur nicht ausreichend, um dem Magneten einen Widerstand gegenüber Wasserstoff zur Verwendung unter hoherWasserstoffgas-Druckumgebung, beispielsweise 100 kPa oder höher zu verleihen. Insbesondere besteht unter einer solchen Umgebung, dassWasserstoff diffundiert und sich wiederholt auf dem Metallüberzugfilm entwickelt, ein Problem, beispielsweise, dass die Erzeugung von Blasenbildungund Abschälen des Überzugfilms hervorgerufen wird, was zu einem abrupten Bruch des Magneten und des Metallüberzugfilms in einem frühem\n\n\n\nStadium und einen Bruch des Magneten führt. Außerdem wird gemäß dem Patent mit der Referenznummer 2 unten ein Verfahren vorgeschlagen,welches das Bilden – auf der Oberfläche des Magneten – eines Mehrfachschicht-Metallüberzugfilms umfasst, der vier Schichten odermehr aus einem Ni-Überzugfilm (Filmen) und einem Cu-Überzugfilm (Filmen) als Bestandteilüberzugfilme hat, und die Gesamtfilmdicke in einemBereich von 15 &mgr;m bis 70 &mgr;m ist, vorausgesetzt, dass die Dicke des Cu-Überzugfilms (Überzugfilme) 30% oder mehr der Gesamtfilmdickebeträgt. Dieses Verfahren leidet jedoch an Problemen, beispielsweise einer Verminderung des effektiven Volumens des Magneten und einem Anstiegder Herstellungskosten. Patent-Referenznummer 1: JP-A-5-29119Patent-Referenznummer 2: JP-A-2003-166080\n\nOffenbarung der ErfindungProbleme, welche die Erfindung lösen soll\n\n\n\n[0005] Folglich ist es eine Aufgabe der vorliegenden Erfindung, ein einfaches und preiswertes Verfahren bereitzustellen, um ausgezeichnetenWiderstand gegenüber Wasserstoff verschiedenen Arten von Artikeln zu verleihen, beispielsweise einem Seltenerdmetall-Permanentmagneten.Mittel zum Lösen der Probleme\n\n\n\n[0006] Im Licht der obigen Umstände hat der Erfinder extensive Studien durchgeführt, und hat schließlich als Ergebnis herausgefunden, dass einMetallüberzugfilm, der durch Impulsplattieren gebildet wird, ausgezeichnete Wasserstoffschutzeigenschaft zeigt.\n\n\n\n[0007] Ein Verfahren zum Verleihen von Widerstand gegenüber Wasserstoff für einen Artikel gemäß der vorliegenden Erfindung, welches auf Basisder obigen Erkundigungen erreicht wird, ist, wie im Patentanspruch 1 beansprucht, durch Bilden eines Metallüberzugfilms durch Impulsplattierung aufder Oberfläche des Artikels gekennzeichnet.\n\n\n\n[0008] Außerdem ist das Verfahren zum Verleihen von Widerstand gegenüber Wasserstoff für einen Artikel gemäß Anspruch 2 ein Verfahren, umWiderstand gegenüber Wasserstoff gemäß Anspruch 1 zu verleihen, wobei der Metallüberzugfilm ein Cu-Überzugfilm ist.\n\n\n\n[0009] Das Verfahren zum Verleihen von Widerstand gegenüber Wasserstoff für einen Artikel gemäß Patentanspruch 3 ist ein Verfahren, umaußerdem Widerstand gegenüber Wasserstoff nach Anspruch 2 zu verleihen, wobei der Metallüberzugfilm unter Verwendung einer Plattierlösunggebildet wird, welche Kupfersulfat aus 0,03 Mol/L bis 1,0 Mol/L, Ethylendiamintetraessigsäure von 0,05 Mol/L bis 1,5 Mol/L und zumindest einesausgewählten von Tartraten oder Zitraten von 0,1 Mol/L bis 1,0 Mol/L enthält, wobei der pH-Wert auf einen Bereich von 10,0 bis 13,0 eingestellt ist.\n\n\n\n[0010] Das Verfahren zum Verleihen von Widerstand gegenüber Wasserstoff für einen Artikel gemäß Anspruch 4 ist ein Verfahren, um Widerstandgegen Wasserstoff gemäß Patentanspruch 1 beansprucht zu verleihen, wobei die Plattierlösung außerdem Natriumsulfat mit 0,02 Mol/L bis 1,0 Mol/Lenthält.\n\n\n\n[0011] Das Verfahren zum Verleihen von Widerstand gegenüber Wasserstoff für einen Artikel gemäß Patentanspruch 5 ist weiter ein Verfahren,um Widerstand gegenüber Wasserstoff gemäß Patentanspruch 2 beansprucht zu verleihen, wobei der Metallüberzugfilm unter Verwendung einerPlattierlösung gebildet wird, welche Kupfersulfat von 0,03 Mol/L bis 1,0 Mol/L, 1-Hydroxy-Ethyliden-1,1-Diphosphinsäure von 0,05 Mol/L bis 1,5 Mol/Lund zumindest eines ausgewählten von Pyrophosphaten und Polyphosphaten mit 0,01 Mol/L bis 1,5 Mol/L enthält, wobei der pH-Wert in einem Bereichvon 8,0 bis 11,5 eingestellt ist.\n\n\n\n[0012] Das Verfahren zum Verleihen von Widerstand gegenüber Wasserstoff für einen Artikel gemäß Patentanspruch 6 ist weiter ein Verfahren, umWiderstand gegenüber Wasserstoff gemäß Patentanspruch 1 zu verleihen, wobei außerdem ein antikorrossiver Überzugfilm auf der Oberfläche desMetallüberzugfilms gebildet ist.\n\n\n\n[0013] Außerdem ist ein Artikel, der gegenüber Wasserstoff nach der vorliegenden Erfindung widerstandsfähig ist, wie Patentanspruch 7beansprucht, dadurch gekennzeichnet, dass er einen Metallüberzugfilm hat, der auf dessen Oberfläche durch Impulsplattierung gebildet wird.\n\n\n\n[0014] Außerdem ist der Artikel, der gegenüber Wasserstoff nach Patentanspruch 8 widerstandsfähig ist, ein Artikel, der gegenüber Wasserstoffwiderstandsfähig ist, wie im Patentanspruch 7 beansprucht, wobei der Metallüberzugfilm in zumindest einem Teil davon eine Mehrschichtstruktur hat,die durch die Anwesenheit der Korngrenzen von plattenförmigen Kristallen hergestellt ist.\n\n\n\n[0015] Der Artikel, der gegenüber Wasserstoff nach Patentanspruch 9 widerstandsfähig ist, ist außerdem ein Artikel, der gegenüber Wasserstoffwiderstandsfähig ist, wie im Patentanspruch 8 beansprucht, wobei die plattenförmigen Kristalle eine bevorzugte Orientierung in Bezug auf die (111)-Ebene und (311)-Ebene haben.\n\n\n\n[0016] Der Artikel, der gegenüber Wasserstoff nach Anspruch 10 widerstandsfähig ist, ist weiter ein Artikel,\n\nder gegenüber Wasserstoff wie im Patentanspruch 7 beansprucht widerstandfähig ist, wobei der Artikel ein Seltenerdmetall-Permanentmagnet ist.\n\n\n\n[0017] Außerdem ist ein Artikel, der gegenüber Wasserstoff nach der vorliegenden Erfindung widerstandsfähig ist, wie im Patentanspruch 11beansprucht, dadurch gekennzeichnet, dass auf seiner Fläche einen Metallüberzugfilm gebildet ist, der in zumindest einem Teil davon teilweiseMehrschichtstruktur hat, welche durch die Anwesenheit von Korngrenzen von plattenförmigen Kristallen hergestellt ist.\n\nEffekt der Erfindung\n\n\n\n[0018] Gemäß der vorliegenden Erfindung kann ein einfaches und kostengünstiges Verfahren bereitgestellt werden, um ausgezeichneten Widerstandgegenüber Wasserstoff verschiedenen Arten von Artikeln zu verleihen, beispielsweise einem Seltenerdmetall-Permanentmagneten.\n\nKurzbeschreibung der Zeichnungen\n\n\n\n[0019] Fig. 1 ist ein Polardiagramm für die (111)-Ebene und die (220)-Ebene des Cu-Überzugfilms 1 bis zum Cu-Überzugfilm 3 eines Beispiels nachder vorliegenden Erfindung.\n\n\n\n[0020] Fig. 2 ist eine FE-SEM-Photographie eines Teilquerschnittabschnitts des Mehrschicht-Cu-Überzugfilms eines Beispiels nach der vorliegendenErfindung.\n\n\n\n[0021] Fig. 3 ist eine FE-SEM-Photographie einer Teilfläche für den Cu-Überzugfilm, der durch Impulsplattierung nach einem Beispiel dervorliegenden Erfindung gebildet wird.\n\nBevorzugte Art zum Ausführen der Erfindung\n\n\n\n[0022] Ein Verfahren zum Verleihen von Widerstand gegenüber Wasserstoff für einen Artikel nach der vorliegenden Erfindung ist durch Bildeneines Metallüberzugfilms durch Impulsplattierung auf der Oberfläche des Artikels gekennzeichnet. Als Metallart, welches den Metallüberzugfilm bildet,der durch Impulsplattierung gebildet wird, können Cu, Sn, Zn, Ag und die Legierungen, welche diese enthalten, erwähnt werden, wobei unter diesenbesonders bevorzugt Cu eine ausgezeichnete Wasserstoffschutzeigenschaft zeigt. Da Sn geeignet ist, Whisker zu erzeugen, und Zn ein Basismetall ist,welches Beschränkungen vom Standpunkt des Korrisionswiderstands hat, wenn dies alleine verwendet wird, sollten Vorkehrungen für den Fall, wo Snoder Zn ausgewählt werden, getroffen werden.\n\n\n\n[0023] In dem Fall, wo Cu als Metallart ausgewählt wird, welches den Metallüberzugfilm bildet, der durch Impulsplattierung auf der Oberfläche einesArtikels gebildet wird, der dazu neigt, zu korrodieren, beispielsweise ein Seltenerdmetall-Permanentmagnet, wird der Cu-Überzugfilm vorzugsweiseunter Verwendung einer Plattierlösung gebildet, welche Kupfersulfat von 0,03 Mol/L bis 1,0 Mol/L enthält, Ethylendiamintetraessigsäure von 0,05Mol/L bis 1,5 Mol/L und zumindest eines ausgewählten von Tartraten (beispielsweise Natriumsalzen und Kaliumsalzen) mit 0,1 Mol/L bis 1,0 Mol/\n\n\n\nL und Zitraten (beispielsweise Natriumsalze und Kaliumsalze), wobei der pH-Wert auf einen Bereich von 10,0 bis 13,0 eingestellt ist. Anders alsein Kupferzyanidbad enthält die Plattierlösung kein Zyan oder andere chemische Komponenten, die für die Umwelt schädlich sind, oder anders alsein Pyrophosphatbad enthält die Plattierlösung keine freien Kupferionen in einer hohen Menge, welche die Substitution von Plattierreaktion auf derOberfläche eines Artikels zu Stande bringen, der geeignet ist, korrodiert zu werden, und liefert daher mühelos keinen Cu-Überzugfilm, der eine niedrigeAdhäsionsfestigkeit hat. Eine besser bevorzugte Plattierlösung enthält Kupfersulfat von 0,05 Mol/L bis 0,5 Mol/L, Ethylendiamintetraessigsäure von0,08 Mol/L bis 0,8 Mol/L und zumindest eines von ausgewählten von Tartraten von 0,1 Mol/L bis 1,0 Mol/L (wie oben ausgeführt) und Zitraten (wieoben ausgeführt), wobei der pH-Wert auf einen Bereich von 11,0 bis 13,0 eingestellt ist. Außerdem kann die Plattierlösung zusätzlich Natriumsulfatvon 0,02 Mol/L bis 1,0 Mol/L enthalten, so dass ein Cu-Überzugfilm wirksam frei von Unebenheit gebildet werden kann. Wenn die Zusatzmengekleiner sein sollte als 0,02 Mol/L, besteht die Gefahr einer Beeinträchtigung einer Cu-Niederschlagseffektivität aufgrund reduzierter elektrischerLeitfähigkeit der Plattierlösung. Wenn dagegen die Zusatzmenge 1,0 Mol/L übersteigt, besteht die Gefahr, es leichter zu machen, Unebenheit aufdem Cu-Überzugfilm zu bilden. Zusätzlich kann auch zur Plattierlösung aus einer Amino-Alkoholverbindung von 0,01 Mol/L bis 1,0 Mol/L hinzugefügtwerden, beispielsweise Aminoethanol, oder Glyzin, Polyethylen-Gykol und dgl. als ein Komplexbildner. Der Zusatz derartiger Komplexbildner ist in denfolgenden Punkten vorteilhaft. Das heißt, sogar, wenn freie Kupferionen in der Plattierungslösung erzeugt werden sollten, werden Komplexe gebildet,um die Substitutionsplattierungsreaktion zu unterdrücken, welche dem Vorhandensein freier Kupferionen zugeschrie\n\nben wird, um dadurch effektiv die Bildung eines Cu-Überzugfilms zu verhindern, der eine niedrige Adhäsionsfestigkeit hat. Da außerdem die Erzeugungvon Kupferoxid an der Kathode unterdrückt wird, wird die Bildung eines groben Cu-Überzugfilms wirksam verhindert.\n\n\n\n[0024] Im Fall eines Auswählens von Cu als Metallart, welches den Metallüberzugfilm bildet, der durch Impulsplattierung auf der Oberfläche einesArtikels gebildet wird, der dazu neigt, zu korrodieren, beispielsweise ein Seltenerdmetall-Permanentmagnet, kann der Kupfer-Überzugfilm unterVerwendung als eine Plattierlösung anders als oben durch eine Plattierlösung gebildet sein, welche Kupfersulfat von 0,03 Mol/L bis 1,0 Mol/L enthält,1-Hydroxy-Ethyliden-1,1-Diphosphinsäure von 0,05 Mol/L bis 1,5 Mol/L und zumindest eines ausgewählten von Pyrophosphaten von 0,1 Mol/L bis1,5 Mol/L (beispielsweise Natriumsalze oder Kaliumsalze) und Polyphosphaten (beispielsweise Natriumsalze und Kaliumsalze), wobei der pH-Wertauf einen Bereich von 8,0 bis 11,5 eingestellt ist. Um für den Zweck, Passivierung der Anode durch Glättungsauflösung zu verhindern, die kritischeStromdichte zu vergrößern oder die Plattierfestigkeit zu reduzieren, können zur Plattierlösung von 0,1 Mol/L bis 1,0 Mol/L beispielsweise Tartrate(beispielsweise Natriumsalze und Kaliumsalze), Zitrate (beispielsweise Natriumsalze und Kaliumsatze) und Oxalate (beispielsweise Natriumsalze undKaliumsalze) hinzugefügt werden.\n\n\n\n[0025] Vorzugsweise kann Impulsplattierung beispielsweise für den Fall ausgeführt werden, wo ein Cu-Überzugfilm gebildet wird, wobei die obigePlattierungslösung verwendet wird, indem elektrischer Strom in Impulsform mit einer maximalen Stromdichte (CDmax) im Bereich 1 A/dm2 bis 40 A/dm2 und einer minimalen Stromdichte (CDmax) im Bereich von 0 A/dm2 bis 5 A/dm2 angelegt wird, während die Dauer des maximalen Stromdichtewerts(Ton) für 0,1 ms bis 10 ms und die Dauer des minimalen Stromdichtewerts (Toff) für 0,5 ms bis 10 ms und bei einer Badtemperatur von 30°C bis 70°Cbeibehalten wird. Durch Anwenden dieser Bedingungen kann ein Cu-Überzugfilm, der überragenden Widerstand gegenüber Wasserstoff hat, mit einerausgezeichneten äußeren Erscheinungsform frei von Oberflächenverbrennung und dgl. erlangt werden.\n\n\n\n[0026] Die Dicke des Metallüberzugfilms, der durch Impulsplattierung gebildet ist, beträgt vorzugsweise 3 &mgr;m oder mehr. Wenn die Filmdickekleiner ist als 3 &mgr;m, besteht die Gefahr eines unzureichenden Zeigens des Widerstands gegenüber Wasserstoff. Die obere Grenze der Filmdickeist nicht besonders begrenzt, jedoch in dem Fall, dass der Artikel ein Seltenerdmetall-Permanentmagnet ist, wird bevorzugt, diese auf 20 &mgr;m vomStandpunkt zum Sicherstellen eines effektiven Volumens des Magneten oder um die Herstellungskosten zu drücken, festzusetzen.\n\n\n\n[0027] Durch Bildung eines antikorrosiven Überzugfilms auf der Oberfläche des Metallüberzugfilms, der durch Impulsplattierung gebildet ist, kannweiter der Widerstand gegenüber Wasserstoff einem Artikel sicherer verliehen werden. Die Dicke des antikorrosiven Überzugfilms beträgt vorzugsweise1 &mgr;m oder mehr. Wenn die Filmdicke weniger ist als 1 &mgr;m, besteht die Gefahr eines unzweichenden Zeigens des Effekts zum Bilden desÜberzugfilms. Als antikorrosive Überzugfilme sind bevorzugt die Metallüberzugfilme, die ausgezeichneten Widerstand gegenüber Wasserstoff haben,beispielsweise diejenigen aus Cu, Sn, Zn, Ag und Gemischen, welche diese enthalten, und ein DLC-Film (diamantartiger Kohlenstofffilm), der hartist und ausgezeichnete Gasschutzeigenschaft zeigt, und geeignet ist, um Risserzeugung in dem Fall zu verhindern, wo der Artikel Seltenerdmetall-Permanentmagnet ist und der Magnet bei Motoren, beispielsweise IPM verwendet wird. Der antikorrosive Überzugfilm, der auf der Oberfläche desMetallüberzugfilms gebildet wird, der durch Impulsplattierung gebildet ist, wird vorzugsweise durch Gleichstrom-Aufbringungs-Elektroplattierunggebildet, ohne elektrischen Strom in Impulsform anzulegen, oder durch Trockenplattierung. Der Grund dafür ist der, dass die Bildung einer nichtstetigenEbene an einer Grenze zwischen dem Metallüberzugfilm, der durch Impulsplattierung gebildet ist, und dem antikorrosiven Überzugfilm, der auf dessenOberfläche gebildet ist, die Wasserstoffschutzeigenschaft weiter vergrößert. In dem Fall, wo die gleiche Metallart für den Metallüberzugfilm verwendetwird, der durch Impulsplattierung gebildet wird, und den antikorrosiven Überzugfilm, der auf dessen Oberfläche gebildet wird, ist es möglich, denProzess zum Anlegen von elektrischem Strom in Impulsform zunächst zu vereinfachen, und dann umzuschalten, um Gleichstrom in einem einzigenPlattierbad anzulegen. Weiter kann der Metallüberzugfilm durch Impulsplattierung entweder unmittelbar auf der Oberfläche eines Artikels gebildet sein,oder auf der Oberfläche eines unteren Schichtüberzugfilms, die auf der Fläche des Artikels vorher gebildet ist, beispielsweise durch Vorgalvanisierungs-Plattierung oder üblichem Plattieren gemäß einem bekannten Verfahren.\n\n\n\n[0028] In dem Fall, dass ein antikorrosiver Überzugfilm weiter auf der Oberfläche des Metallüberzugfilms gebildet wird, der durch Impulsplattierunggebildet ist, oder der Metallüberzugfilm durch Impulsplattierung auf der Fläche eines unteren Schichtüberzugfilms gebildet ist, der auf der Fläche einesArtikels gebildet ist, und in dem Fall, dass der Artikel ein Seltenerdmetall-Permanentmagnet ist, beträgt die Gesamtfilmdicke, welche auf der Oberflächedes Magnet gebildet wird, vorzugsweise 50 &mgr;m oder weniger, und besonders bevorzugt 40 &mgr;m oder\n\nweniger vom Standpunkt des Sicherstellens eines effektiven Volumens des Magneten oder um die Herstellungskosten zu drücken.\n\n\n\n[0029] Die vorliegende Erfindung ist nicht nur bei einem Seltenerdmetall-Permanentmagneten anwendbar, der in Umgebungen von hohemWasserstoffgasdruck verwendet wird, sondern auch für jegliche Artikel, für die Widerstand gegenüber Wasserstoff erforderlich ist.\n\nBeispiele\n\n\n\n[0030] Die vorliegende Erfindung wird weiter ausführlich unten mittels Beispielen und Vergleichsbeispielen erläutert, wobei jedoch verstanden seinsollte, dass die Erfindung nicht darauf beschränkt ist. Die Beispiele und die Vergleichsbeispiele wurden unter Verwendung von gesinterten Magnetenmit einer Länge von 39 mm ausgeführt, einer Breite von 20 mm und einer Höhe von 3 mm, welche eine Zusammensetzung von 14Nd-0,5Dy-7B-Fehaben (Gleichgewicht) (in at%) (die anschließend einfach als \"Magnetteststücke\" bezeichnet werden), die gemäß einem Prozess vorbereitet sind,der beispielsweise im US-Patent Nr. 4 779 723 und im US-Patent Nr. 4 792 368 beschrieben wurde; d.h., durch Pulverisierung eines bekanntenGießblocks, und dann durch Unterwerfen des resultierenden Pulvers einem Druckvorgang, einem Sinterungsvorgang, einer Wärmebehandlung undeiner Oberflächenbearbeitung.\n\nBeispiel 1:\n\n\n\n[0031] Ein Nickelüberzugfilm (Ni-Überzugfilm) mit einer Dicke von 1 &mgr;m wurde auf der Oberfläche des Magnetteststücks durch Ni-Vorgalvanisierungsplattieren gebildet (Prozessschritt 1), und ein Kupferüberzugfilm (Cu-Überzugfilm) mit einer Dicke von 8 &mgr;m wurde außerdemdarauf durch Cu-Impulsplattierung gebildet (Prozessschritt 2). Außerdem wurde im gleichen Plattierungsbad ein Anlegen eines elektrischen Stroms inImpulsform auf Anlegen von Gleichstrom umgeschaltet, um dadurch einen Cu-Überzugfilm mit einer Dicke von 27 &mgr;m auf dessen Oberfläche durchCu-Elektroplattieren unter Anlegung von Gleichstrom zu bilden (Prozessschritt 3). Die Plattierungsbedingungen sind wie folgt:\n\nNickel-Sulfat-Hexa-Hydrat  130 g/L (0,49 Mol/L) \n\nAmmoniumchlorid  15 g/L (0,28 Mol/L) \n\nDiammonium-Zitrat  60 g/L (0,27 Mol/L) \n\nBorsäure  15 g/L (0,24 Mol/L) \n\nNatriumsulfat  35 g/L (0,25 Mol/L) \n\nBadtemperatur 50°C\n\npH   6,5 (eingestellt mit 28%-Ammoniumwasser) \n\nStromdichte   0,3 A/dm2\n\nKupfersulfat-Pentahydrat  0,3 Mol/L \n\nDinatrium-Ethylen-Diamin-Tetra-Azetat  0,5 Mol/L \n\nNatriumsulfat  0,5 Mol/L \n\nDinatrium-Tartrat  01, Mol/L \n\nEthanolamin  0,1 Mol/L \n\nBadtemperatur 60°C\n\npH  11,5 (eingestellt mit Natrium-Hydroxid) \n\nCDmax   20 A/dm2\n\nCDmin   0 A/dm2\n\nTon   1 ms \n\nToff   9 ms \n\nRententions-Verfahren-GerüstProzessschritt 3: Gleichstromanlegen bei Cu-Elektroplattieren\n\n\n\n[0032] Badzusammensetzung, Badtemperatur und pH sind die gleichen wie die, welche beim Cu-Impulsplattieren verwendet wurden (das gleichePlattierungsbad wurde verwendet).\n\nStromdichte 1 A/dm2 Retentions-Verfahren-Gerüst\n\n\n\n[0033] Die somit erlangten vier Magnetteststücke (Proben), welche jeweils einen Mehrfachschicht-Metallüberzugfilm mit einer Gesamtdicke von36 &mgr;m auf deren Oberfläche haben, wurden einem Druckwasserstofftest bei 60°C unter 1 MPa unterworfen, und die Ablaufzeit, um die Probe zubrechen, wurde gemessen. Als Ergebnis trat kein Bruch der Probe sogar nach 2000 Stunden vom Beginn des Testes auf.\n\nVergleichsbeispiel 1:\n\n\n\n[0034] Ein Ni-Überzugfilm mit einer Dicke von 1 &mgr;m wurde auf der Oberfläche des Magnetteststücks durch Ni-Vorgalvanisierungsplattierunggebildet (unter den gleichen Umständen wie die, welche bei dem Beispiel 1 beschrieben wurden), und ein Cu-Überzugfilm mit einer Dicke von 35&mgr;m wurde weiter darauf durch Cu-Elektroplattierung mit Gleichstromanlegen gebildet (unter den gleichen Bedingungen wie die, welche imBeispiel 1 beschrieben wurden). Die somit erlangten zwei Magnetteststücke (Proben), welche jeweils einen Mehrschicht-Metallüberzugfilm mit einerGesamtdicke von 36 &mgr;m auf deren Oberfläche haben, wurden einem Druckwasserstofftest bei 60°C unter 1 MPa unterworfen, und die Ablaufzeit,um die Probe zu brechen, wurde gemessen. Als Ergebnis wurden beide Proben nach 34 Stunden vom Beginn des Tests gebrochen.\n\nAnalyse und Diskussion:\n\n\n\n[0035] Wie deutlich aus dem Beispiel 1 und dem Vergleichsbeispiel 1 zu verstehen ist, war, obwohl Überzugfilme der gleichen Gesamtdickevorgesehen. wurden, der Widerstand gegenüber Wasserstoff, der größtenteils in Abhängigkeit davon unterschiedlich war, ob ein Cu-Überzugfilm durchImpulsplattierung gebildet wurde, vorhanden oder nicht. Die obigen Ergebnisse wurden analysiert und durch den Erfinder wie folgt erläutert.\n\n\n\n[0036] Da der Gleichgewichts-Kernabstand r0 in einem Wasserstoffmolekül r0 = 0,074 nm klein ist, erreichen, wenn ein Fehler im Überzugfilmvorhanden ist, sogar, wenn dieser ein Nadelloch mit einer Größe von ungefähr mehreren Mikrometern sein sollte, Wasserstoffmoleküle leicht dieFläche des Artikels über den Fehler. Obwohl von der Art des Gegenmaterials abhängig sind Wasserstoffmoleküle so reaktiv, dass sie leicht auf derOberfläche des Festkörpers adsorbiert und getrennt werden. Der atomare Wasserstoff, der durch Trennung des Wasserstoffmoleküls erzeugt wird, istsogar kleiner, und folglich kann er in Molekülen oder Kristallen eingebaut sein und leicht innerhalb des Kristalls diffundiert werden. Um zu verhindern,dass Wasserstoffmoleküle die Oberfläche des Artikels erreichen, ist es entscheidend, zu verhindern, dass Wasserstoffmoleküle in die Innenseite desÜberzuglilms eindringen. Von diesem Standpunkt aus beanspruchen die Verfahren zum Verleihen von Widerstand gegenüber Wasserstoff Artikelndurch Bilden eines Mehrfachschicht-Metallüberzugfilms auf deren Oberfläche, wie im Patent mit der Referenznummer 1 und dem Patent mit derReferenznummer 2 offenbart, eine Wasserstoffschutzeigenschaft sicherzustellen, wobei Nadellöcher beseitigt werden, welche von der Außenseite aufdie Fläche des Artikels eindringen. Ein Ni-Überzugfilm, der allgemein als Bestandteil-Überzugfilm zum Bilden eines Mehrfachschicht-Metallüberzugfilmsverwendet wird, ist, da er eine hohe Ausgleichseigenschaft hat, geeignet, Wasserstoffmoleküle auf dessen Fläche zu adsorbieren und zu trennen, undneigt dazu, durch atomaren Wasserstoff hineingebracht zu werden. Außerdem leidet ein Ni-Überzugfilm an solchen Problemen, dass, da er eine relativhohe Festkörperlöslichkeit für Wasserstoff hat, ein großer Wasserstofffluss längs der Tiefenrichtung auftritt (der Richtung vor der Fläche des Artikels),nachdem die Festkörperlöslichkeit für Wasserstoff ein Maximum erreicht.\n\n\n\n[0037] Dagegen ist im Unterschied zu einem Ni-Überzugfilm ein Cu-Überzugfilm äußerst vorteilhaft bezüglich der Wasserstoffschutzeigenschaft, daweniger Adsorption und Trennung von Wasserstoffmolekülen auf dessen Oberfläche auftreten, und die Festkörperlöslichkeit für Wasserstoff ist relativklein. Die Ergebnisse oben zeigen jedoch, dass es Faktoren in Bezug auf die Wasserstoffschutzeigenschaft gibt, die anders sind als die wesentlicheEigenschaft des Cu-Überzugfilms. Folglich wurde der Cu-Überzugfilm, der durch Impulsplattieren gebildet wird, ausführlich analysiert, um angemesseneFeststellung zu erlangen, die bis heute niemals berichtet wurde.\n\n\n\n[0038] Zunächst wurde die Kristallorientierung in Bezug auf die (111)-Ebene und die (220)-Ebene eines Cu-Überzugfilms (Cu-Überzugfilm 1) mit derDicke von 8 &mgr;m, der auf der Oberfläche des Magnetteststücks gebildet wurde, über einen Ni-Überzugfilm mit einer Dicke von 1 &mgr;m, wobeidie Prozessschritte 1 und 2 im Beispiel 1 ausgeführt wurden, aus dem Polardiagramm studiert, welches durch Röntgenstrahl-Diffraktometrie unterBedingungen, die anschließend angegeben werden, erlangt wird. Im gleichen Zeitpunkt wurde die Kristallorientierung in einer ähnlichen Weise wie obenauf einem Cu-Überzugfilm (Cu-Überzugfilm 2) mit der Dicke von 8 &mgr;m studiert, der auf der Oberfläche des Magnetteststücks gebildet wurde, übereinem Ni-Überzugfilm mit einer Dicke von 1 &mgr;m, wobei der Prozess unter den gleichen Bedingungen wie die für den Cu-Überzugfilm 1 ausgeführt\n\n\n\nwurden, mit der Ausnahme, dass Cu-Elektroplattierung mit Gleichstromanlegen mit einer Stromdichte von 1 A/dm2 anstelle der Cu-Impulsplattierungdurchgeführt wurde; und auf einem Cu-Überzugfilm (Cu-Überzugfilm 3) mit der Dicke von 8 &mgr;m, der auf der Oberfläche des Magnetteststücksgebildet wurde, über einem Ni-Überzugfilm mit der Dicke von 1 &mgr;m, wobei der Prozess unter den gleichen Bedingungen wie die für den Cu-Überzugfilm 1 ausgeführt wurden, mit der Ausnahme, dass Cu-Elektroplattierung mit Gleichstromanlegen mit einer Stromdichte von 0,2 A/dm2 anstelledes Cu-Impulsplattierens durchgeführt wird, und wobei ein Fass anstelle der Verwendung eines Gerüsts als Retentions-Verfahren verwendet wird.Leistungsabgabe   45 kV–40 mA \n\nZiel  Co-K&agr; \n\nZeit/Schritt  1 s \n\nSchrittbreite  5° für &phgr; und 5° für φ \n\nWinkelbereich  &phgr;: 0° bis 85°, φ: 0° bis 355° \n\nSymmetrieebene  (111)-Ebene: 2&thgr; = 50,82° \n\n  (220)-Ebene: 2&thgr; = 88,95° \n\n\n\n[0039] Das Polardiagramm für die (111)-Ebene und die (220)-Ebene für den Cu-Überzugfilm 1, den Cu-Überzugfilm 2 und dem Cu-Überzugfilm 3 istin Fig. 1 gezeigt. Fig. 1 zeigt deutlich, dass kein wesentlicher Unterschied bezüglich der Orientierung der (111)-Reflexion und der (220)-Reflexion fürden Cu-Überzugfilm 2 und den Cu-Überzugfilm 3 beobachtet wurde, jedoch für den Cu-Überzugfilm 1, wobei eine wesentliche bevorzugte Orientierungin Bezug auf die (111)-Reflexion beobachtet wird. Weiter wurde eine ausgeprägte bevorzugte Orientierung in Bezug auf die Ebene beobachtet, welcheeinen Winkel von 60° in Bezug auf die (111)-Reflexion bildet. Da Cu-Kristalle kubisch sind, können Ebenen, welche einen Winkel von ungefähr 60° zurEbene (111)-Ebene bilden, die (211)-Ebene und die (311)-Ebene für Kubik sein.\n\n\n\n[0040] Folglich wurde das 2&thgr;-&thgr;-Abtasten separat durchgeführt, um zu erforschen, ob entweder die (211)-Ebene oder die (311)-Ebene derbeobachteten Ebene entspricht, welche einen Winkel von ungefähr 60° zur (111)-Ebene bildet, und es wurde herausgefunden, dass dies die (311)-Reflexion ist. Die Tatsache, dass der Cu-Überzugfilm 1 bevorzugte Orientierung in Bezug auf die (111)-Ebene und die (311)-Ebene zeigt, wurdeaußerdem durch eine separat vorgenommene Querschnitt-FE-SEM-Photographie des Cu-Überzugfilms 1 bestätigt. Auf Basis dieses Herausfindenswurde angenommen, dass der Grund, warum der Cu-Überzugfilm 1 ausgezeichnete Wasserstoffschutzeigenschaft zeigt, der ist aufgrund der speziellenKristallorientierung, welche bevorzugte Orientierung in Bezug auf die (111)-Ebene und die (311)-Ebene zeigt, welche gegenüber der Kristallorientierungdes Cu-Überzugfilms 2 und des Cu-Überzugfilms 3 unterschiedlich ist.\n\n\n\n[0041] Anschließend wurde ein Ni-Überzugfilm mit der Dicke von 1 &mgr;m auf der Oberfläche des Magnetteststücks durch Ni-Vorgalvanisierungsplattieren gebildet (unter den gleichen Bedingungen wie die, welche im Beispiel 1 beschrieben wurden), und ein Cu-Überzugfilmmit einer Dicke von 4 &mgr;m wurde außerdem darauf durch Cu-Impulsplattieren gebildet (unter den gleichen Bedingungen, die im Beispiel1 beschrieben wurden). Außerdem wurde im gleichen Plattierungsbad ein Anwenden von elektrischem Strom in Impulsform auf anlegen vonGleichstrom umgeschaltet, um dadurch einen Cu-Überzugfilm mit der Dicke von 4 &mgr;m auf dessen Oberfläche durch Cu-Elektroplattieren mitGleichstromanlegen zu bilden (unter den gleichen Bedingungen wie die, welche im Beispiel 1 beschrieben wurden). Fig. 2 ist ein Querschnitts-FE-SEM-Photographie (8500-fache Vergrößerung), welche die Nähe einer Grenze zwischen dem Cu-Überzugfilm, der durch Impulsplattieren gebildet wurde, und dem Cu-Plattierungsfilm, der durch Elektroplattieren mit Gleichstromanlegen gebildet wurde, zeigt, welche Bestandteilsüberzugfilme derMehrfachschicht-Metall-Überzugfilm mit der Gesamtdicke von 9 &mgr;m sind und in der Weise über der Fläche des Magnetteststücks gebildet sind.Fig. 2 zeigt deutlich, dass der Cu-Überzugfilm, der durch Impulsplattieren gebildet wird, zumindest teilweise zufalls-verteilte Mehrfachschichtstrukturaufweist, welche durch das Vorhandensein der Korngrenzen von plattenförmigen Kristallen hergestellt ist, und dass die plattenförmigen Kristalle in einerabgeflachten Form von ungefähr 1 &mgr;m bis 10 &mgr;m in der Hauptachse sind, mit der Dicke von 10 nm bis 300 nm, und im Lageverhältnis von10 bis 1000. Außerdem wurde das Magnetteststück aus der Plattierungslösung herausgezogen, in dem Zustand, wo der Cu-Überzugfilm durch Cu-Impulsplattieren auf der Oberfläche des Ni-Überzugfilms gebildet wurde, und dessen Oberfläche wurde dem FE-SEM-Photographieren unterworfen,nachdem dies mehrere 10 Sekunden geätzt wurde, wobei ein 1:1-Mischsäure aus Salpetersäure oder Essigsäure verwendet wurde. Dadurch wurdebestätigt, dass die plattenförmigen Kristalle auf der Oberfläche vorhanden waren (siehe Fig. 3, Vergrößerung 40 000-fach). Bei einem derartigenAufbau des Cu-Überzugfilms, der durch Impulsplattieren gebildet wird, wird außerdem angenommen, zur', '本发明涉及对各种类型的制品如稀土永磁体赋予耐氢性的方法。\n\n技术背景\n\n\n\n[0002]作为用于防止全球变暖，这是归因于CO 2排放，氢燃料今天露头提请注意作为替代石油和煤燃料（化石燃料）时，关注的装置，环境技术在Beziehungvon依赖程度，并且已经积极地开发各种系统，例如使用氢作为燃料的发电，冷却和储存。在开发这些系统的要求，扩展是在稀土永磁体，例如通过使用Nd-Fe-B系永久磁铁为代表的R-Fe-B永磁体的应用中，它是预期的，因为磁体是由廉价的材料，这是资源丰富，且具有优异的磁特性，并且如果它们被嵌入在循环马达以及其他在输送或运输氢气使用磁传感器，就可以实现这种廉价紧凑型系统。\n\n[0003]在使用在使用氢alsBrennstoff领域稀土永磁铁的延伸的观察的情况下，磁体应具有在使用过程中氢的阻力，抵抗环境，高的氢气压力。在考虑的R-Fe-B永磁体的情况下，如磁体具有的，但是，高Wasserstoffabsorptivität，如从以下事实清楚地表明该磁体是由有关使用氢气磁性粉末durchDruckzermalen的精细分割的过程。在这种情况下，结果，其中氢存在于环境中，其中磁体被使用的，环境可以采用其中的氢气压力可以是100千帕或更高，而不管环境是否被单独包含氢气或氢气的混合气体和其他气体形成;在这样的情况下，存在引起的是，如果有足够的抗氢应当赋予磁体，磁体氢可以吸收和由于与氢R的反应将是脆性的，导致氢化物的形成或eineexotermische反应的问题，并最终磁铁的破坏有其后果。\n\n[0004]作为赋予耐氢为稀土永磁体的方法。例如，根据在参考数字1的下方，其包括磁体的表面上形成镀铜膜提出的专利的方法，以及还形成的表面上金属涂层膜，其由多于Cu基的金属形成，例如，Ni镀膜。然而，该方法仅仅是用于防止磁体吸收在磁体表面上形成金属涂膜期间产生的氢气的方法。因此，这种层状结构的简单应用不足以使磁体对氢的耐受性用于高氢气压力环境，例如100kPa或更高。具体来说，有这样的环境下，地扩散的氢，并在金属涂层膜，一个问题，例如反复开发的用于生产涂膜Blasenbildungund剥离造成的，它早于磁铁的突然断裂，金属涂层膜在一\n\n磁铁的阶段和断裂导致。的方法也是根据专利参考文献2的下方提出，其包括形成 - 包括多层金属被膜或Ni镀膜（膜）和镀Cu膜（片）的更四层 - 在磁体的表面上作为涂膜的部件具有和的范围为15微米的总的膜厚度，为m提供的Cu的厚度镀膜（涂布膜）30％或更多的Gesamtfilmdickebeträgt的;米至70微米。但是，这种方法从问题遭受诸如磁体的有效体积的减少和一个Anstiegder制造成本。专利参考文献1：JP-A-5-29119专利参考文献2：JP-A-2003-166080\n\n发明内容本发明要解决的问题\n\n\n\n[0005]因此，本发明的一个目的是用于解决问题的用于赋予优良的耐氢的不同类型的物品提供一种简单和廉价的方法，例如一种稀土Permanentmagneten.Mittel\n\n\n\n[0006]在上述情况的光，本发明人进行了深入研究，终于发现作为结果einMetallüberzugfilm，这是由脉冲电镀形成，表现出优异的氢性。\n\n[0007]一种用于赋予耐氢为根据本发明，这是在Basisder上述查询来实现，如在权利要求1分的权利要求，其特征在于所述制品的表面上形成通过脉冲镀的金属镀膜制品的方法。\n\n\n\n[0008]此外，根据权利要求2的方法赋予耐氢对产品的方法中，根据权利要求1用于赋予，其中所述金属涂层膜是Cu涂膜umWiderstand氢。\n\n\n\n[0009]为了赋予耐氢为根据权利要求3的产物的方法是根据权利要求2得到，其中使用Plattierlösunggebildet金属涂层膜是一种方法umaußerdem氢电阻为0.03mol / L至的硫酸铜1.0mol / L的0.05摩尔/ L至1.5mol / L的的乙二胺四乙酸和含有至少一种从酒石酸盐或0.1摩尔/ L的柠檬酸盐选择为1.0摩尔/ L，pH值设置范围为10.0到13.0。\n\n\n\n[0010]为了赋予耐氢为根据权利要求4的产物的方法是根据权利要求1到赋予对要求保护的氢性的方法，其特征在于，所述镀敷溶液也硫酸钠与0.02摩尔/ L至1.0mol /Lenthält ，\n\n[0011]根据权利要求5的赋予耐氢对产品的方法，还提供一种方法，根据权利要求2，其中所述金属涂层膜使用einerPlattierlösung其中铜形成为氢权利阻力赋予硫酸0.03摩尔/ L至1.0摩尔/ L，0.05摩尔/ L的1-羟基 - 亚乙基-1,1-二膦酸至1.5摩尔/隆德至少一种选自焦磷酸盐和多磷酸盐选自具有0.01摩尔/ L至1 ，5mol / L，将pH调节在8.0至11.5的范围内。\n\n\n\n[0012]为了赋予耐氢，根据权利要求6所述的产品的方法，进一步是权利要求1所述用于赋予，被进一步形成在表面antikorrossiverdesMetallüberzugfilms的涂膜的方法umWiderstand根据氢。\n\n\n\n此外，如权利要求7所述的根据本发明的耐氢的制品，其特征在于，它具有通过脉冲电镀在其表面上形成的金属涂膜。\n\n\n\n[0014]此外，所述制品，其是根据权利要求8的制品，其是对耐氢，如权利要求7要求保护的特征是金属涂层膜其具有多层结构，在至少一个部分，通过晶粒边界的存在下耐氢制成板状晶体。\n\n[0015]所述的制品，根据权利要求9也这是耐氢为一种制品，如权利要求8中对氢抗性，其中所述板形晶体（相对于所述（111）面和311的优选取向）等级。\n\n\n\n根据权利要求10的耐氢的制品还是一种制品\n\n8.如权利要求7所述的耐氢的方法，其中所述制品是稀土永磁体。\n\n\n\n[0017]另外，制品，其是根据本发明如权利要求所述的11beansprucht耐氢，其特征在于，形成在其表面，它部分地多层结构由晶粒间界的存在具有的至少一部分上的金属被膜由板状晶体制成。\n\n本发明的效果\n\n\n\n根据本发明，可以提供一种简单且廉价的方法，以赋予各种类型的制品如稀土永磁体优异的耐氢性。\n\n附图简要说明\n\n\n\n图1是根据本发明的实施例的Cu涂膜1与Cu涂膜3的（111）面和（220）面的极坐标图。\n\n\n\n图2是根据本发明的实施例的多层Cu涂膜的局部横截面的FE-SEM照片。\n\n\n\n图3是根据本发明的一个实施例的通过脉冲电镀形成的Cu涂膜的部分表面的FE-SEM照片。\n\n实施本发明的优选方式\n\n\n\n对本发明的制品赋予耐氢性的方法的特征在于，在制品表面上通过脉冲电镀形成金属涂膜。作为形成由脉冲可以铜，锡，锌，银形成的金属覆膜，并且这些提及的含有合金，以及这些特别优选的是铜优异氢性之间的金属物种。由于Sn的适于产生晶须和Zn是碱金属，如果是单独使用，其具有从Korrisionswiderstands的观点考虑的限制，为的情况下安排，其中Snoder是锌应采取。\n\n在选择Cu作为构成通过脉冲电镀在易腐蚀的制品表面上形成的金属镀膜的金属的类型的情况下，例如，稀土永磁体，优选通过使用Cu形成Cu镀膜。含有0.03mol / L至1.0mol / L的硫酸铜，0.05mol / L至1.5mol / L的乙二胺四乙酸和至少一种含有0的酒石酸盐（例如钠盐和钾盐）的电镀液， 1 mol / L至1.0 mol /\n\nL和柠檬酸盐（例如，钠盐和钾盐），其中所述pH被调节到范围10.0〜13.0。否则比Kupferzyanidbad包含电镀液没有青色或是对环境有害的，但在其它比一个焦磷酸酮电镀溶液中的其它化学成分中含有大量的无游离铜离子，其带来Plattierreaktion的取代的物品的表面上，以该适合的条件是被腐蚀，并因此提供具有niedrigeAdhäsionsfestigkeit没有简单的Cu涂膜。更优选的电镀液含有硫酸铜0.05摩尔/ L至0.5mol / L的0.08摩尔/ L的乙二胺四乙酸，以从0.1摩尔/ L到的酒石酸盐中选择0.8摩尔/ L和至少一个1.0摩尔/ L（如上所述）和柠檬酸盐（如上述执行），将pH调节为11.0〜13.0。另外，镀覆溶液可另外硫酸钠为0.02mol / L~1.0mol / L，可以有效地形成无涂层的Cu涂膜。如果添加量应小于0.02mol / L，则由于电镀液的电导率降低而担心会降低Cu沉淀效率。相反，如果添加量超过1.0mol / L，则担心更容易在Cu涂膜上形成不均匀性。此外，对于0.01摩尔/ L的至1.0mol / L的氨基醇化合物的镀覆溶液可加入，如氨基乙醇，或甘氨酸，聚乙烯Gykol等。作为络合剂。在以下几点中添加这种络合剂是有利的。也就是说，即使在电镀液中产生游离铜离子，也会形成络合物以抑制由于游离铜离子的存在而引起的取代电镀反应\n\n从而有效地防止形成具有低粘合强度的Cu涂膜。另外，由于抑制了阴极处氧化铜的产生，因此有效地防止了粗Cu涂层膜的形成。\n\n\n\n[0024]在选择Cu作为其形成由脉冲的制品，其趋向于腐蚀的表面上形成的金属覆膜，例如，金属物质，稀土类永久磁铁，氧化铜涂层膜可通过使用，因为不同的镀敷溶液的情况下通过含有硫酸铜0.03摩尔/ L至1.0mol / L，0.05摩尔/ L的1-羟基 - 亚乙基-1,1-二膦酸至1.5mol的电镀液来形成如上/ L和至少一个从0.1摩尔/升的焦磷酸盐选择为1.5摩尔/ L（例如，钠盐或钾盐），和多磷酸盐（例如，钠盐和钾盐），pH值的范围从8.0至11.5已设定。为了防止阳极的钝化的目的通过平滑的分辨率时，临界电流密度，以增加或减少包层的强度，可用于0.1摩尔/ L的电镀到1.0摩尔/ L，例如，酒石酸盐（例如，钠盐和钾盐），柠檬酸盐（例如，钠盐和钾盐）和草酸盐（例如，钠盐和钾盐）。\n\n[0025]优选地，脉冲电镀，例如，对于其中形成有Cu涂层膜，其中，所述obigePlattierungslösung用于通过电流中的脉冲形式，其具有在1 / dm 2到40A / dm 2的范围内的最大电流密度（CDmax）的情况下进行和在0施加DM2 DM2到5 A / A /的范围内的最小电流密度（CDmax），而最大电流密度值的持续时间（TON）为0.1毫秒至10毫秒，最小功率密度值的0的持续时间（Toff的） ，5毫秒至10毫秒，并保持在30°C至70°C的浴温。通过应用这些条件，可以获得具有优异耐氢性的Cu涂膜，并且具有优异的外表面，没有表面燃烧等。\n\n\n\n通过脉冲电镀形成的金属涂膜的厚度优选为3μm或更大。如果膜厚度小于3μm，则担心耐氢性不足。 Filmdickeist的上限没有特别限制，但在该物品是稀土类永久磁铁的情况下，优选的是使用这些至20微米按米vomStandpunkt以确保磁体的制造成本的增加的或附近的有效体积。\n\n[0027]能够赋予固定通过形成金属涂层膜的表面上的抗腐蚀涂层膜是通过脉冲形成的，可进一步对物品的耐氢性。防腐蚀涂膜的厚度优选为1μm或更大。如果膜厚度小于1μm，则担心不能合理地显示形成外涂膜的效果。作为防腐涂膜，金属涂层膜对氢气优良的耐是优选的有，例如，那些由铜，锡，锌，银，以及它们的混合物的包含它们，并且DLC膜（类金刚石碳膜）hartist并显示优良的气体屏蔽性，和在制品是稀土永磁体并且磁体用于诸如IPM的电动机的情况下，适合于防止裂纹产生。防腐蚀镀膜铺设在金属镀膜的表面上通过脉冲电镀形成的电极优选地通过DC沉积电镀形成，而不施加脉冲形式的电流或通过干电镀。这样做的原因是，非平面连续的在由脉冲形成的金属覆膜，并且在其表面上形成的抗腐蚀涂膜之间的边界形成，使氢性进一步提高。另外，在用于通过脉冲形成的金属覆膜，并且其在其表面上形成的抗腐蚀涂层膜中的相同类型的金属，所以能够简化denProzess为脉冲形式最初施加电流，然后切换的情况下在单个电镀槽中施加DC。此外，金属涂膜可以通过直接在制品表面上进行脉冲电镀来形成或者在预先形成在制品表面上的下层涂膜的表面上，例如通过根据已知方法的预镀或常规电镀。\n\n在通过脉冲电镀形成的金属涂膜的表面上进一步形成防腐蚀涂膜的情况下，或者在制品表面上形成的下层涂膜的表面上通过脉冲电镀形成金属涂膜，并且其中在制品是稀土永磁体的情况下，在磁体表面上形成的总膜厚度优选为50μm或更小，更优选为40μm或者\n\n从确保磁铁的有效容积或抑制制造成本的观点来看，这一点较少。\n\n\n\n本发明不仅适用于在高氢气压力环境中使用的稀土永磁体，而且也适用于任何需要耐氢的物品。\n\n示例\n\n下面将通过实施例和对比例进一步详细说明本发明，然而，应该理解，本发明不限于此。使用长度为39mm，宽度为20mm，高度为3mm的烧结磁体进行实施例和对比例，组成为14Nd-0.5Dy-7B（余量）（％）。 （根据例如美国专利No.4,779,723和美国专利No.4,792,368中所述的方法）制备的（下文中简称为“磁体测试件”）。即，通过粉碎已知的铸块，然后对所得粉末进行印刷，烧结，热处理和表面处理。\n\n例1\n\n\n\n[0031]一种镀镍膜的厚度为1微米，形成由Ni触击电镀（处理步骤1），和铜镀敷膜（Cu镀膜）的厚度为8微米形成的磁铁体试片的表面上（Ni被覆薄膜）在其上用Cu脉冲（处理步骤2）进一步形成。此外，电流inImpulsform的一个应用程序被切换到施加直流，从而形成具有厚度为27微米的相同的电镀浴，以形成上下直流（处理步骤3）的应用其表面durchCu电镀微米的镀Cu膜。镀敷条件如下：\n\n硫酸镍六水合物为130g / L（0.49摩尔/ L）\n\n氯化铵15g / L的（0.28摩尔/ L）\n\n柠檬酸二铵为60g / L（0.27摩尔/ L）\n\n硼酸15g / L的（0.24摩尔/ L）\n\n硫酸钠为35g / L（0.25摩尔/ L）\n\n浴温50℃下\n\npH为6.5（用28％-Ammoniumwasser调整）\n\n电流密度0.3A / dm 2的\n\n硫酸铜五水合物0.3摩尔/ L\n\n二钠乙二胺四乙酸0.5摩尔/ L\n\n硫酸钠0.5摩尔/ L\n\n酒石酸二钠01摩尔/升的\n\n乙醇胺0.1摩尔/升\n\n浴温60℃下\n\npH值11.5（用氢氧化钠调节）\n\nCDmax 20 A / dm2\n\nCDmin 0 A / dm2\n\n音1毫秒\n\nToff 9毫秒\n\nRententions-Verfahren-GerüstProcess第3步：采用铜电镀的直流应用\n\n\n\n浴液组成，浴温和pH与Cu脉冲电镀（使用相同的电镀浴）中使用的相同。\n\n电流密度为1A / dm2的保留过程框架\n\n\n\n[0033]这样得到的4条磁铁实验件（样品）具有的总厚度von36＆微米在其表面上均具有多层金属涂层膜，在60℃的压力下氢试验进行至1MPa和到期时间，打破了样品，被测量了。结果，即使在测试开始2000小时后也没有发生样品破损。\n\n比较例1\n\n\n\n形成具有的厚度为1微米[0034]一种Ni涂膜用Ni Vorgalvanisierungsplattierunggebildet在磁体试验件的表面上（在相同的条件与实施例1中描述的下），并具有一定厚度的Cu镀膜通过DC共沉积电镀（在与实施例1中所述相同的条件下）在其上进一步形成35μm的结晶。由此获得的两个磁铁试验片（样品）均具有进行具有36微米的表面上的总厚度，在60℃下为1MPa的压力下的氢测试的多层金属涂层膜，和到期时间打破样品测量。结果，两个样品在测试开始34小时后破裂。\n\n分析和讨论：\n\n\n\n从实施例1和对比例1清楚地理解，尽管提供了相同总厚度的涂膜。例如，取决于是否通过脉冲电镀形成Cu涂膜，对氢的耐受性存在很大差异。本发明人如下分析和解释了上述结果。\n\n[0036]由于所述平衡芯距离r0 =是0.074纳米小的氢分子R0，取得当在涂膜中存在故障，即使当这应该是一个针孔尺寸为大约几微米，氢分子容易dieFläche制品的上错误。尽管取决于计数器材料氢分子的类型是这样的反应性，它们容易吸附在固体和分离的表面上。由所述氢分子的分离而产生原子氢，istsogar小，因此它可被结合到分子或晶体，并且可以很容易地在晶体内扩散。为了防止氢分子到达制品的表面，关键的是要防止氢分子渗透到内部desÜberzuglilms。从这一观点出发，由权利要求赋予氢气产物抗性的方法如专利文献1和专利说明书No.2中所公开的，在其表面上形成多层金属涂膜，以确保氢保护性能，消除从外部渗透到制品表面的针孔。通常用作形成多层金属镀膜的构成涂膜的Ni镀膜具有高平衡性能，能够在其表面上吸附和分离氢分子，并且倾向于被原子氢引入。另外，Ni镀膜存在这样的问题，即由于它对氢具有相对高的固溶度，因此在氢的固溶度达到最大值之后沿着深度方向（制品表面前方的方向）产生大的氢通量。\n\n[0037]与此相反，会发生与此相反的Ni镀膜和氢的固溶度相对较小相对于其表面极其有利的氢性daweniger吸附和氢分子的分离的镀Cu膜。然而，上述结果表明，存在涉及其是由Cu的wesentlicheEigenschaft涂膜不同的氢保护材料的因素。因此，通过脉冲镀形成的Cu涂层膜进行了详细，以获得合理的固定位置，这是至今从未报道过分析。\n\n\n\n[0038]首先，相对于所述（111）面的晶体取向是和镀Cu膜的（220）面具有8微米，将其形成在磁体试验件的表面上的厚度（Cu涂层膜1），进行了米，其中，所述处理实施例1中步骤1和2，从由X射线衍射法，其随后指示的，具有的厚度为1微米的镍涂覆膜的条件下所获得的极坐标图的研究。同时，晶体取向以类似的方式为在具有研究米8微米，将其形成在磁体试验件的表面上的厚度的铜镀敷膜（Cu镀膜2）的顶部，在Ni涂膜具有的厚度为1该工艺在与Cu涂膜1相同的条件下进行\n\n除了采用直流电流在1A / dm2的电流密度下进行Cu电镀而不是Cu脉冲电镀;并且，在厚度为1μm的Ni镀膜上，在磁体试验片的表面上形成厚度为8μm的Cu镀膜（Cu镀膜3）的情况下，在相同条件下进行处理如同对Cu镀膜1所做的那样，除了使用0.2A / dm 2的电流密度进行Cu电镀而不是Cu脉冲电镀，并且使用圆筒作为保持保持而不是使用支架。使用工艺。功率输出45 kV-40 mA\n\n目标Co-K＆agr;\n\n时间/步骤1秒\n\n步长5°适用于＆lt; φ为5°\n\n角度范围φ：0°至85°，φ：0°至355°\n\n对称平面（111）平面：2＆θ; = 50.82°\n\n  （220）飞机：2＆theta; = 88.95°\n\nCu涂膜1，Cu涂膜2和Cu涂膜3的（111）面和（220）面的极坐标图如图4所示。图1清楚地表明，对于Cu涂膜2和Cu涂膜3的（111）反射和（220）反射的取向没有观察到实质差异，但是对于Cu涂膜1，其中观察到关于（111）反射的显着的优先取向。此外，相对于相对于（111）反射形成60°角的平面，观察到明显的优选取向。由于Cu晶体是立方体，与平面（111）平面成约60°角的平面可以是（211）面和（311）面为立方体。\n\n因此，分别进行2θ-θ扫描以探究（211）平面或（311）平面是否对应于与（111）平面成约60°角的观察平面。飞机，发现这是（311）反射。通过单独制作的Cu镀膜1的横截面FE-SEM照片进一步证实了Cu镀膜1相对于（111）面和（311）面呈现优先取向的事实。基于该发现，认为Cu涂膜1显示出优异的氢保护性的原因是由于特殊的晶体取向显示出相对于（111）面和（311）面的优选取向，这与其相反。 Cu涂膜2和Cu涂膜3的晶体取向是不同的。\n\n[0041]随后，具有1微米的Ni触击电镀形成厚度米在磁体试验件的表面上（在相同的条件作为1实施例中描述的下）镀Ni膜，并且在Cu-Überzugfilmmit厚度通过Cu脉冲电镀（在与实施例1中描述的相同条件下）进一步在其上形成4μm。此外，施加在脉冲状电流的切换来创建vonGleichstrom从而形成具有在同一个镀浴中的4微米的厚度，由铜电镀mitGleichstromanlegen（在相同的条件下，以形成米的表面上形成镀Cu膜，其在实施例1）中描述。图2是一个横截面FE-SEM照片（8500倍）示出了镀Cu膜之间的边界附近是由脉冲电镀形成，与Cu，通过电镀镀敷膜通过直接施加电流，显示了哪些部件涂膜derMehrfachschicht的9微米和sind.Fig在磁体试验件的表面上形成以这样的方式的总厚度的金属被膜而形成。 2清楚地表明，Cu涂层膜是通过脉冲电镀形成，至少部分地随机分布，其是由板状晶体的晶界的存在下制备Mehrfachschichtstrukturaufweist，并且在einerabgeflachten形式的约1微米到板状晶体10微米的主轴线，具有10nm的厚度至300nm，和10至除了1000的位置关系，在磁铁体试片被拉出的状态下的镀敷溶液，其中通过在Cu脉冲电镀的Cu涂层膜Ni镀膜的表面形成并且其表面进行FE-SEM拍摄中，它已被蚀刻的多个10秒钟后，使用1：使用硝酸或乙酸的1-混合酸。由此，证实板状晶体存在于表面上（参见图3，放大40,000倍）。在通过脉冲电镀形成的Cu涂膜的这种结构中，还认为有助于涂膜的优异的氢保护性能。作为上述原因，可以提及以下原因。即，它假设，wennFestkörperlöslichkeit氢到达沿着深度方向上的最大氢气流发生时，但是，由于板状结晶伊甸流在每个晶界预防，逐渐在关于降低的氢气浓度的氢气的外部压力被进一步提高，并且最后氢分子被有效地屏蔽，以到达磁性测试件的区域。此外，已经预测到随机多层结构有效地抑制了穿透针孔的产生，这也被认为在表现出氢保护性能方面有效地起作用。\n\n例2：\n\n\n\n[0042]在相同的电镀条件与实施例1的，具有的厚度为1微米的Ni镀膜是由Ni触击镀而形成的磁铁体试片的表面上，并且具有的厚度为8微米的Cu镀膜通过Cu脉冲电镀进一步形成。另外，在脉冲状电流的应用已被切换施加直流电，从而形成具有厚度为10微米以相同的镀浴，以形成由铜 -  DC电镀表面上微米的Cu镀膜aufdas。\n\n\n\n[0043]由此获得的5个磁铁实验件（样品）具有具有19微米的总厚度均具有多层金属涂层膜MClick其表面，在60℃的压力下氢试验进行至1MPa，并且所经过的时间来使样品休息，测量。结果，即使在测试开始2000小时后也没有发生样品破损。\n\n例3：\n\n在下面的电镀条件下，通过Cu预镀电镀（工艺步骤1），并在与实施例1的工艺步骤2和3相同的电镀条件下，在磁性测试片的表面上形成厚度为1μm的Cu电镀膜。通过Cu脉冲电镀在其上形成厚度为8μm的Cu涂膜。另外，在相同的镀浴中，将脉冲形式的电流施加到DC电力的施加，从而通过Cu-DC电镀在其表面上形成厚度为27μm的Cu涂膜。五水硫酸铜0.06摩尔/升\n\n1-羟基 - 亚乙基-1,1-二次膦酸0.15mol / L.\n\n焦磷酸钾0.2 mol / L.\n\n浴温60℃下\n\npH 10（用氢氧化钠调节）\n\n电流密度1 A / dm2\n\n\n\n养老金出版骨干方法\n\n\n\n[0045]由此获得的5个磁铁实验件（样品）具有36微米的表面上形成总厚度，氢试验在60℃下为1MPa的压力每一个都具有多层金属涂层膜进行和到期时间，打破了样品，被测量了。结果，即使在测试开始2000小时后也未观察到样品破损。\n\n例4：\n\n\n\n形成由铜触击电镀在磁体试验件的表面上具有的1微米的厚度[0046]一种铜覆膜的相同的电镀条件与实施例3的过程步骤1的下方，einCu涂膜下面具有厚度所示的电镀条件下进行通过Cu脉冲电镀在其上进一步形成8μm（步骤工艺步骤2）。 （过程步骤3）通过施加DC .Kupfersulfat五水合物，以形成由铜电镀在表面上米;接着在gleichenPlattierungsbad脉冲形式向直流电流的施加电流的应用切换到27亩从而einenCu涂膜0.3 mol / L.\n\n1-羟基 - 亚乙基-1,1-二次膦酸0.5mol / L.\n\n焦磷酸钾0.2 mol / L.\n\n浴温60℃下\n\npH 10（用氢氧化钠调节）\n\nCDmax 20 A / dm2\n\nCDmin 0 A / dm2\n\n音1毫秒\n\nToff 9毫秒\n\n保留方法框架工艺步骤3：通过施加直流电镀铜\n\n\n\n浴液组成，浴温和pH与Cu脉冲电镀（使用相同的电镀浴）中使用的相同。\n\n电流密度1 A / dm2\n\n保留骨干方法\n\n\n\n[0048]由此获得的5个磁铁实验件（样品）具有具有36微米的总厚度均具有多层金属涂层膜MClick其表面，在60℃的压力下氢试验进行至1MPa，并且所经过的时间来使样品休息，测量。结果，即使在从测试开始2000小时后也没有发生样品破损。\n\n例5：\n\n\n\n[0049]一种镀锡膜具有的厚度为5微米，形成在磁体试验件的最外表面，这是实施例2中制备的，在其上具有19的总厚度的多层金属涂膜上半亮镀Sn（Sn）的微米wurde.Das形成使用进行半光泽镀Sn合金软GTC-21为30℃，2 / dm 2的电流密度einerBadtemperatur（上村工业株式会社的市售品）并通过使用脚手架进行。\n\n[0050]由此获得的5个磁铁实验件（样品）在表面上具有24微米的总厚度各自具有多层金属涂层膜，在60℃的压力下氢试验进行至1MPa和到期时间，打破了样品，被测量了。结果，即使在测试开始2000小时后也没有发生样品破裂。\n\n例6：\n\n\n\n形成使用相同的电镀条件与实施例3的过程步骤1中的由铜Vorgalvanisierungsplattierenunter在磁体试验件的表面上形成厚度为1微米[0051]一种铜覆膜，并且nachstehendenPlattierungsbedingungen下，具有一定厚度的铜镀敷膜通过Cu脉冲电镀在其上形成8μm（工艺步骤2）。通过使用形成的直流施加（处理步骤3）的Cu-电镀米的表面上;另外，其厚度为20微米的Cu镀膜在下述电镀条件下进行。\n\n硫酸铜五水合物0.3摩尔/ L\n\n1-羟基 - 亚乙基-1,1-二次膦酸0.5mol / L.\n\n焦磷酸钾0.5 mol / L.\n\n酒石酸Dinatirum 0.1 mol / L.\n\n浴温60℃下\n\npH 10（用氢氧化钠调节）\n\nCDmax 5 A / dm2\n\nCDmin 0 A / dm2\n\n音4毫秒\n\nToff 6毫秒\n\n焦磷酸铜0.25mol / L.\n\n焦磷酸钾0.9mol / L.\n\n铵2 mL / L.\n\n浴温60℃下\n\npH 8.6（用氢氧化钾调节）\n\n电流密度为3A / dm2\n\n保留骨干方法\n\n\n\n[0052]由此获得的5个磁铁实验件（样品）具有在其表面上29微米的总厚度各自具有多层金属涂层膜，在60℃的压力下氢试验进行至1MPa，并且它的经过时间到探针断裂，测量。结果，即使在测试开始2000小时后也没有发生样品破损。\n\n工业可用性\n\n\n\n[0053]本发明具有在于其提供了一种简单且廉价的方法，得到以氢不同类型的制品性优异，例如稀土类永久磁铁的点工业实用性。\n\n摘要\n\n\n\n问题：为各种类型的制品，例如稀土永磁体提供简单且廉价的赋予氢的优异耐受性的方法。\n\n解决方法：本发明的制品赋予耐氢性的方法，其特征在于，在制品表面上通过脉冲电镀形成金属涂膜。');
INSERT INTO `os_patent_instruction_text` VALUES (13051, 22880, '【技術分野】\n\n【0001】\n\n本発明は、モータ、アクチュエータ等に用いられるR-Fe-B系焼結磁石の製造方法\n\nに関する。\n\n【背景技術】\n\n【0002】\n\nR-T-B系磁石、とりわけ焼結磁石は、優れた特性と比較的低コストであることから、あらゆる分野で使用されるようになってきた。特に近年は、エアコン用のコンプレッサモータ、自動車のパワーステアリング用モータ、ハイブリッド自動車用の駆動モータ/発電機等に多量に使われ、省エネルギー、環境負荷低減に活用されている。\n\n【0003】\n\nしかし、モータのような、大きくかつ変化する外部磁界を受ける環境では、磁石内部にも渦電流が発生し、モータ効率を低下させたり、モータ自身の温度上昇を招くことが欠点とされている。現状は渦電流損失を考慮してもなおR-T-B系焼結磁石を用いる方が有利であるが、更に高効率化を進めるには、磁石の電気抵抗を高め、渦電流による損失を極小にすることが必要である。\n\n【0004】\n\nR-T-B系ボンド磁石は、絶縁体である樹脂バインダーを体積比で15〜40%含むため、焼結磁石に比べ、電気抵抗は一桁以上大きい。しかし、バインダーの体積分は特性が低下する。また、高温に耐えられる実用的な樹脂は少なく、使用環境温度に耐え得る磁石が得られないことも課題である。\n\n【0005】\n\nR-T-B系焼結磁石においても、電気抵抗を高める方法は種々検討されている。例えば、下記特許文献1では、磁石粉末と絶縁体粉末とを混合して焼結する方法が提案されており、絶縁体としてアルカリ金属、アルカリ土類金属、希土類金属のそれぞれフッ化物が有効であることが開示されている。また、特許文献2には、希土類酸化物を混合して焼結し、粒界に酸化物を集積させることで電気抵抗を高める方法が提案されている。\n\n【0006】\n\nまた、引用文献3では、磁石組成との反応を考慮して、酸化硼素を添加し、最終的に粒界に希土類酸化物又は希土類複合酸化物を形成する方法が、引用文献4では、絶縁層を層状に形成した磁石およびその製造方法が提案されている。\n\n【特許文献1】特開平10-163055号公報\n\n【特許文献2】特開平10-83908号公報\n\n【特許文献3】特開2002-64010公報\n\n【特許文献4】特開2001-68317号公報\n\n【発明の開示】\n\n【発明が解決しようとする課題】\n\n【0007】\n\nしかし、引用文献1、2に係る方法においては、電気抵抗を充分大きくするには、フッ化物や酸化物の量を多くし、絶縁物がネットワークを形成するようにしなければならず、磁石の特性と電気抵抗を両立させることが困難であった。また、添加する絶縁物と磁石成分との反応によって、磁気特性が低下する危険もあった。\n\n【0008】\n\nまた、引用文献3に係る方法においても、電気抵抗を大きくするには相当量の非磁性相(=希土類酸化物又は複合酸化物)が必要であり、磁石特性が低下することは避けられなかった。\n\n【0009】\n\nさらに、引用文献4に係る方法においては、粉末成形時に磁粉充填と絶縁物混合粉末とを数回交互に充填、加圧するという複雑工程が必要であり、また絶縁物混合粉末には、焼結性等を考慮して磁粉も混合するため、必ずしも層状な絶縁層を形成できず、絶縁が不充分になるという課題があった。また、導電層が2次元的な広がりを持つ形態しか製造できないため、渦電流低減効果が不充分となる懸念があった。\n\n【0010】\n\n本発明は、上述した従来の課題を解決し、比較的簡単な工程により、絶縁性が高く、渦電流低減効果に優れた、高磁気特性と高電気抵抗を両立させたR-T-B系焼結磁石の製造方法を提供することを目的とする。\n\n【課題を解決するための手段】\n\n【0011】\n\n請求項1に記載のR-T-B系焼結磁石の製造方法は、複数のR-T-B系焼結磁石片(Rは、Nd、Pr、Dy、Tbのうち少なくとも一種であり、NdまたはPrのいずれかが必ず含まれ、Tは、Feを必ず含み、Tの50%以下をCoで置換できる)を準備する工程、\n\n前記複数の磁石片の各磁石表面を酸化処理またはフッ化処理する工程、\n\n前記酸化処理またはフッ化処理後の複数の磁石片を組み立て、組立体となす工程、\n\n前記組立体に一体化熱処理を施す工程、を含むことを特徴とする。\n\n【0012】\n\n請求項2に記載のR-T-B系焼結磁石の製造方法は、請求項1に記載の製造方法において、酸化処理またはフッ化処理が、酸化性ガスまたはフッ化性ガス中で行われることを特徴とする。\n\n【0013】\n\n請求項3に記載のR-T-B系焼結磁石の製造方法は、請求項1に記載の製造方法において、酸化処理またはフッ化処理が、酸化物粉末またはフッ化物粉末の中に前記各磁石片を埋め込み、熱処理することにより行われることを特徴とする。\n\n【0014】\n\n請求項4に記載のR-T-B系焼結磁石の製造方法は、請求項3に記載の製造方法において、酸化物粉末またはフッ化物粉末が、希土類酸化物粉末または希土類フッ化物粉末であることを特徴とする。\n\n【0015】\n\n請求項5に記載のR-T-B系焼結磁石の製造方法は、請求項4に記載の製造方法において、希土類が、Pr、Nd、Tb、Dyのうちいずれか一種であることを特徴とする。\n\n【0016】\n\n請求項6に記載のR-T-B系焼結磁石の製造方法は、請求項4に記載の製造方法において、一体化熱処理が、ホットプレスまたはHIPであることを特徴とする。\n\n【0017】\n\n請求項7に記載のR-T-B系焼結磁石は、請求項1に記載の製造方法によって得られたことを特徴とする。\n\n【発明の効果】\n\n【0018】\n\n本発明によれば、比較的簡単な工程により、絶縁性が高く、渦電流低減効果に優れた、高磁気特性と高電気抵抗を両立させたR-T-B系焼結磁石を得ることができる。\n\n【0019】\n\n本発明によるR-T-B系焼結磁石をモータ、アクチュエータ等に用いることにより、渦電流損失が低減され、エネルギー効率が向上する。\n\n【0020】\n\n本発明によるR-T-B系焼結磁石は、渦電流損失が低減されているため、磁石の温度上昇が抑制され、磁気特性の熱減磁を抑制できる。\n\n【0021】\n\n本発明によるR-T-B系焼結磁石は、複数の磁石片を組み立てて一体化するため、減磁耐力が大きく、寸法や形状によらずに、常に安定した磁気特性を発揮することができる。\n\n【発明を実施するための最良の形態】\n\n【0022】\n\n本発明のR-T-B系焼結磁石の製造方法における各構成について以下に説明する。\n\n【0023】\n\nR-T-B系焼結磁石片において、Rは、Nd、Pr、Dy、Tbのうち少なくとも一種から選択される。ただし、Rは、NdまたはPrのいずれか一方を必ず含むことが望ましい。更に好ましくは、Nd-Dy、Nd-Tb、Nd-Pr-Dy、またはNd-Pr-Tbで示される希土類元素の組合わせを用いる。\n\n【0024】\n\n希土類元素のうち、DyやTbは、特に保磁力の向上に効果を発揮する。上記元素以外に少量のCeやLaなど他の希土類元素を含有してもよく、ミッシュメタルやジジムを用いることもできる。また、Rは純元素でなくてもよく、工業上入手可能な範囲で、製造上不可避な不純物を含有するものでも差し支えない。含有量は、従来から知られる含有量を採用することができ、例えば、27.0質量%以上32.0質量%以下が好ましい範囲である。27.0質量%未満では高磁気特性、特に高保磁力が得られず、32.0質量%を超えると残留磁束密度が低下するためである。\n\n【0025】\n\nTは、Feを必ず含み、その50%以下をCoで置換することができる。Coは温度特性の向上、耐食性の向上に有効であり、通常は10質量%以下のCoおよび残部Feの組合わせで用いる。含有量は、従来から知られる含有量を採用することができ、例えば、63.0質量%以上72.5質量%以下が好ましい範囲である。63.0質量%未満では残留磁束密度が低下し、72.5質量%を超えると保磁力の低下を来たすためである。\n\n【0026】\n\nBの含有量についても公知の含有量で差し支えなく、例えば、0.90質量%〜1.30質量%が好ましい範囲である。0.90質量%未満では高保磁力が得られず、1.30質量%を超えると残留磁束密度が低下するため好ましくない。より好ましくは、0.95質量%〜1.05質量%であり、BrまたはHcJを向上させることができる。\n\n【0027】\n\nなお、Bの一部はCで置換することができる。C置換は磁石の耐食性を向上させることができ有効である。B+Cとした場合の含有量は、Cの置換原子数をBの原子数で換算し、上記のB濃度の範囲内に設定されることが好ましい。\n\n【0028】\n\n上記元素に加え、保磁力向上のためにM元素を添加することができる。M元素は、Al、Si、Ti、V、Cr、Mn、Ni、Cu、Zn、Ga、Zr、Nb、Mo、In、Sn、Hf、Ta、Wのうち少なくとも一種である。添加量は2.0質量%以下が好ましい。2.0質量%を超えると残留磁束密度が低下するためである。\n\n【0029】\n\nまた、上記元素以外に不可避的不純物を許容することができる。例えば、Feから混入するMn、Crや、Fe-B(フェロボロン)から混入するAl、Si、Cuなどである。\n\n【0030】\n\n上述した組成のR-T-B焼結磁石片は、公知の粉末冶金的手段、すなわち、合金鋳造、粉砕、成形、焼結及び熱処理によって製造することができる。\n\n【0031】\n\n合金の鋳造に際しては、公知の手段が採用できるが、中でも、ストリップキャスティング法が好適である。ストリップキャスティング法によれば、例えば板厚0.1mm〜5mm程度の鋳片を得ることができる。得られた鋳片は、Rリッチ相が微細に分散し、主相であるR2Fe14B相の短軸寸法が0.1μm〜50μm、長軸寸法が5μm〜板厚程度の極微細な柱状組織を有している。このような柱状組織の存在により、高磁気特性を得ることができる。ストリップキャスティング法の代わりに、遠心鋳造法を採用しても良い。また、溶解·合金化の工程に代えて、直接還元拡散法を用いて上記組成の合金を作製しても良い。\n\n【0032】\n\n得られた合金を、公知の方法によって平均粒径1μm〜10μmに粉砕する。このような合金の粉末は、粗粉砕工程と微粉砕工程の2種類の粉砕を行うことによって好適に作製され得る。粗粉砕は、水素吸蔵粉砕法や、ディスクミルなどを用いた機械的粉砕法によって行うことができる。また、微粉砕は、ジェットミル粉砕法、ボールミル、アトライターなどの機械的粉砕法によって行うことができる。\n\n【0033】\n\n上記の粉砕によって得られた微粉砕粉は、公知の成形技術を用いて様々な形状に成形される。成形は、磁場中圧縮成形法を用いて行うことが一般的であるが、パルス配向した後静水圧成形やゴムモールド内で成形する方法を用いて行っても良い。\n\n【0034】\n\n成形時の給粉の能率、成形密度の均一化、成形時の離型性などを向上させるために、脂肪酸エステルなどの液状潤滑剤やステアリン酸亜鉛などの固状潤滑剤を微粉砕前の粉末および/または微粉砕後の粉末に添加することが好ましい。添加量は、粉末100重量部に対して、0.01重量部〜5重量部が好ましい。\n\n【0035】\n\n成形後の成形体は、公知の方法によって焼結することができる。焼結温度は1000℃〜1180℃、焼結時間は1〜6時間程度が好ましい。焼結後の焼結体には、所定の熱処理を施す。熱処理条件は、温度400℃〜600℃、時間1〜8時間程度である。\n\n【0036】\n\n得られた磁石体においては、酸素0.5質量%以下、窒素0.2%以下、水素0.01質量%以下であることが好ましい。\n\n【0037】\n\n上記R-T-B系焼結磁石片の寸法は、渦電流損失を極小化するためには小さく、薄いほうが望ましいが、実用上、磁気特性、取り扱いの容易さ等により決定することができる。\n\n【0038】\n\n磁石片の厚さ(最も寸法の小さい方向)は、通常のダイヤモンド砥石による切削や研削では、1mm以下で加工劣化により磁石特性に明確な悪影響が生じる。加工劣化の小さい、内周刃切断機やワイヤソーを用いても加工劣化の影響は存在し、厚さの下限は事実上0.3mmである。\n\n【0039】\n\nまた、磁石片の厚さを薄くすると、組立体に占める接合界面の量が増し、その体積分の磁気特性の低下が生じるため、むやみに薄くするのは好ましくない。従って、磁石片の厚さは0.3mm以上、望ましくは2mm以上である。なお、厚さの上限は、後述する酸化処理またはフッ化処理により、副次的に得られる保磁力向上効果を考慮すれば、10mm以下が望ましい。\n\n【0040】\n\n例えば、磁化容易方向10mm×5mm×5mmの磁石片を用いた場合、磁化容易方向に直交する横方向に4個、縦方向に6個並べることで、磁化容易方向10mm×20mm×30mmの磁石を作ることができる。また、組み立て、一体化熱処理後に加工して所定形状にすることもでき、例えば、前記磁化容易方向10mm×20mm×30mmの磁石をスライス加工して、磁化容易方向4mm×20mm×30mmの磁石を作ることもできる。\n\n【0041】\n\nまた、磁化容易方向10mm×5mm×30mmの薄板状磁石片を用いれば、4枚を5mm方向に積層してホットプレスにより一体化することにより、同様に前記磁化容易方向10mm×20mm×30mmの磁石を得ることができる。\n\n【0042】\n\nまた、磁石片は、全て同じ大きさである必要はなく、大きな電気抵抗が必要な磁石表層部には小さいまたは薄い磁石を用いて渦電流のパスを小さくし、中心部は大きな磁石を用\n\nいて磁石特性を稼ぐような作り方も可能である。\n\n【0043】\n\n上記によって得られたR-T-B系焼結磁石片を複数個準備し、各磁石片の磁石表面を酸化処理またはフッ化処理する。\n\n【0044】\n\n酸化処理、フッ化処理の方法は、酸化物粉末やフッ化物粉末の中に磁石片を埋め込み、ArやHe中で500〜1100℃で10分〜8時間の熱処理を行い、磁石表面に拡散付着させる方法、あるいは、特許第3471876号に示されたような、ガスフッ化処理や、酸化性ガスにより  酸化処理、フッ化処理を行う公知の手段を採用することができる。\n\n【0045】\n\nまた、磁石片を酸化物粉末やフッ化物粉末に埋め込んだ状態で、ホットプレス等を用いて加圧しつつ熱処理を行えば、より効果的に拡散処理を行うことができる。\n\n【0046】\n\n酸化物粉末やフッ化物粉末は、それぞれ単独で用いてもよいし、混合して用いることもできる。酸化物粉末の代わりに水酸化物を用いることもできる。水酸化物は、磁石用粉末に混合して熱処理すると、脱水反応時の水により磁石用粉末が酸化し、焼結できなくなったり、また磁気特性が大幅に低下するが、本発明のように磁石片に被着させる場合は脱水反応の悪影響をあまり考慮する必要がない。\n\n【0047】\n\nまた、磁石表面への付着性を高めるために溶媒、バインダー等を用いることもできるが、この場合は熱処理温度よりも低温で脱溶媒(バインダー)処理を行うことが好ましい。\n\n【0048】\n\n酸化物粉末やフッ化物粉末、又はその混合物を溶媒に溶いて噴霧法や浸漬法で磁石表面に塗布することもできる。\n\n【0049】\n\n酸化物粉末やフッ化物粉末は、希土類の酸化物粉末、フッ化物粉末が好適であり、希土類の種類は、磁石用としての物性、コストを考慮すると、使用可能なものはPr、Nd、Tb、Dyの4元素が好ましい。特に、重希土類の酸化物、フッ化物を用いた場合、磁石片内部に拡散する少量の重希土類で磁石の保磁力を高めることができる。\n\n【0050】\n\nまた、酸化又はフッ化反応を、一体化熱処理時に同時に行うこともできる。すなわち、磁石片の表面に絶縁物粒子を塗布後組み立てて一体化熱処理を行い、一体化と同時に接合面に絶縁層を形成することができる。\n\n【0051】\n\n酸化処理やフッ化処理は、組立体を構成する全ての磁石片に行う必要はなく、渦電流の影響が最も大きい表層部の磁石片のみに処理を施すこともできる。\n\n【0052】\n\n上記により磁石表面に酸化処理またはフッ化処理が施されたR-T-B系焼結磁石片は、任意の形状、例えば、エアコン用のコンプレッサモータ、自動車のパワーステアリング用モータ、ハイブリッド自動車用の駆動モータなどに使用される形状に組立て、組立体を作製する。\n\n【0053】\n\n例えば、上述のように、磁化容易方向10mm×5mm×5mmの磁石片を用いた場合、横に4個、縦に6個並べることで磁化容易方向10mm×20mm×30mmの磁石組立体を作製することができる。\n\n【0054】\n\n磁石片の組み立ては、特に制限されるものではないが、渦電流は外部磁界の変化と直行する方向に流れるから、磁化容易軸の方向には分割する必要はなく、その直交方向に分割することが望ましい。しかし、モータによっては必ずしも外部磁界の方向と磁石の磁化容易軸方向とが一致していない場合があり、その場合は磁化容易軸方向にも磁石を分割し、\n\n積層することができる。\n\n【0055】\n\nなお、組み立てる磁石片は、必ずしも同一組成、同一特性である必要はなく、例えば組み立てた状態での中央付近には高磁化の磁石片を、外周部には高保磁力の磁石片を配して一体化することもできる。これにより、実用上充分な減磁耐力を保ちつつ、磁化を高めることも可能である。\n\n【0056】\n\n上記によって組み立てられた組立体を一体化熱処理によって一体化し、R-T-B系焼結磁石を作製する。\n\n【0057】\n\n一体化熱処理は、ホットプレス又はHIPを用いて熱処理することで行う。ホットプレスを用いる場合、例えば、処理物を組み立ててセッティングした後、ダイスとの隙間に希土類酸化物や希土類フッ化物、又はそれらの混合物粉末を充填し、通常のホットプレスと同様に加圧昇温処理を行えば、希土類酸化物や希土類フッ化物、又はそれらの混合物粉末が圧力媒体となるため擬似的に静水圧が加わったようになり、3次元的に加圧が可能である。また、充填用粉末を用いず、2軸方向に加圧可能なホットプレスを用いれば、2次元の加圧が可能であり、2次元的接合ができる。\n\n【0058】\n\nHIP処理は、公知の方法、例えば、ステンレス箔製の袋に組立体を挿入して、袋を溶接などにより真空封止した後、HIP処理を行う方法や、耐熱ガラス等に真空封入し、Arガス加圧で処理する方法以外に、処理物を酸化物粉末やフッ化物粉末、又はそれらの混合物に埋め込んで、そのままHIP処理を行う方法を採る事もできる。この場合、温度が上昇し、耐熱ガラスが軟化、変形して圧力が加わるまでの間、組み立て形状を維持する必要があるが、簡便には針金等で軽く縛っておけばよい。\n\n【0059】\n\nHIP処理の条件は、組立体の大きさ、磁石片の個数などで変化するが、公知の条件、例えば、温度600℃〜950℃、保持時間0.1時間〜10時間、加圧力10MPa〜100MPaで行うことができる。\n\n【0060】\n\nまた、ホットプレスに代えて、通電焼結法やスパークプラズマ焼結法を用いることも可能である。この場合、磁石片本体に通電して接合すると、絶縁層が部分的に破壊されることがあるので、例えば導電性の高いグラファイトダイスを用いてダイスを加熱するなど、通電方法は充分考慮しなければならない。しかしながら、希土類酸化物は、600℃以上では常温時より2〜3桁の導電性を持つため、通電焼結法でも実用上は絶縁性を大きく損ねるものではない。磁石片を積層する場合は、ダイスを用いず、パンチのみで加圧する方法を採る事もできる。\n\n【0061】\n\n一体化熱処理にて一体化されたR-T-B系焼結磁石は、そのまま各種用途に用いてもよいし、さらに加工を施して分割して使用することもできる。また、表面を研削加工の後、各種表面処理を施すこともできる。また、一体化熱処理後、磁石の保磁力調整を主たる目的として、400℃〜700℃、1分〜4時間の熱処理を施すこともできる。\n\n【0062】\n\n一体化後のR-T-B系焼結磁石は、その内部が2次元的あるいは3次元的に、平面な絶縁膜によって、一定の区画ごとに絶縁された状態となるため、渦電流損失が大幅に低減され、モータ、アクチュエータ等に用いることにより、エネルギー効率が向上する。\n\n【0063】\n\nまた、渦電流損失が低減されているため、磁石の温度上昇が抑制され、磁気特性の熱減磁量を低減でき、さらに、複数の磁石片を組み立てて一体化するため、減磁耐力が大きく、寸法や形状によらずに、常に安定した磁気特性を発揮することができる。\n\n【実施例】\n\n【0064】\n\n実施例1\n\n30.0Nd-0.98B-1.0Co-0.2Al-0.1Cu-残部Fe(数字は質量%を示す)の組成の焼結磁石片を、既知の粉末冶金法で得た。磁石片中の不純物は、酸素0.2%、炭素0.06%であり、磁気特性は、Br=1.46T、HcJ=1.02MA/m-1、(BH)max=409kJ/m3であった。\n\n【0065】\n\nこの磁石片を、ダイヤモンドカッターにて切断加工、平面研削盤にて研削加工を行い、20mm(容易磁化方向)×30mm×2mmの板状とした。該板状磁石片を、種々の希土類酸化物又はフッ化物粉末中に埋め込み、表層改質処理としてAr雰囲気中、表1に示す条件で拡散処理を行った。この結果、磁石素材のごく表層部分に拡散層が生成し、最表層部はNdの酸化物又はフッ化物、フッ酸化物が生成していた。なお、表層部に付着した余分な酸化物またはフッ化物粉末は、ワイヤブラシを用いて除去した。\n\n【0066】\n\n次に、得られた表面改質処理済みの板状磁石片を、2mmの方向に10枚重ね、概略厚さ20mmとし、重ね合わせた方向に加圧しながらホットプレス装置を用いて拡散接合した。ホットプレスは、真空で行い、表1に示す条件で処理した。パンチは高密度カーボン製であり、加圧はおよそ50MPaとし、加熱中は一定圧力を維持した。処理後Ar雰囲気に復圧して冷却し、取り出したところ、10枚の板状磁石片は一体化していた。またカーボン製のパンチとの溶着も認められなかった。\n\n【0067】\n\n一体化した磁石を取り出し、Ar中、520℃、1時間の時効熱処理を施した後、磁極端面のみ研削加工し、磁石特性の測定、積層方向の電気抵抗率測定を行った。その結果を表1に示す。なお、積層方向に垂直な方向の電気抵抗率は、何れの条件でも1.6μΩm程度と、元の磁石片と同レベルであった。\n\n【0068】\n\n【表1】\n\n\n\n【0069】\n\n実施例2\n\n板状磁石片の厚さを種々に変え、実施例1のNo.1に示す条件で一体化熱処理を行い、焼結磁石を作製した。焼結磁石の最終形状は、磁化容易方向4mm×20mm×積層方向32mmとした。このときの磁石特性と積層方向の電気抵抗測定値、またモーターに組み込んだ場合の渦電流損失(積層しないバルク磁石を1として規格化)を図1に示す。なお、図1における横軸の板厚とは、板状磁石片の積層方向の厚さをいう。\n\n【0070】\n\n実施例3\n\n表層改質処理の方法を、板状磁石片に対し、溶液中でDy水酸化物をアモルファス状態のゲルとして沈殿被着させ、一度のホットプレスで改質と拡散接合を同時に行うことを試みた。ゲルの作成は、Dy硝酸塩の水溶液中にアンモニア水を加え、沈殿させる方法を用いた。これを充分に乾燥させないまま板状磁石片表面に塗布し、Ar気流中で80℃の乾燥処理を行った後、板状磁石片を積層し、ホットプレスを行った。ホットプレスは、水酸化物の熱分解を考慮して、真空中、300℃と500℃でそれぞれ1時間保持し、その後昇温して800℃、30分保持後、Arを導入して冷却した。\n\n【0071】\n\n得られた磁石は、略20mm(磁化容易方向)×30mm×20.5mm(積層方向)であり、やや積層方向の寸法が絶縁層の厚さ分大きくなった。平均的な絶縁層の厚さは0.05mm程度と見積もられる。Ar中、520℃、1時間の時効熱処理を施した後、磁極端面のみ研削加工し、磁石特性の測定、積層方向の電気抵抗率測定を行った。その結果、Br=1.38T、HcJ=1.29MA/m-1、(BH)max=368kJ/m3、積層方向の電気抵抗率は175μΩmであった。\n\n【0072】\n\n実施例4\n\n磁化容易軸方向10mm×3mm×3mmの磁石片(材料は実施例1と同じ)を、実施例1の条件No.1と同様の手法で表面酸化処理し、内径40mmの高強度カーボンダイス内に横に10個並べ、高さ方向に7段重ねてセットすると共に、隙間にDy2O3粉末を充填してホットプレス処理した。加圧力を49MPaとし、真空中、900℃で2時間保持した後、Arガスを導入して冷却し、取り出した。得られた磁石は概略寸法が磁化容易方向10mm×30mm×21mmであった。\n\n【0073】\n\n得られた磁石に、Ar中、520℃、1時間の時効熱処理を施した後、磁極端面のみ研削加工し、磁石特性の測定、積層方向の電気抵抗率測定を行った。その結果、Br=1.42T、HcJ=1.32MA/m-1、(BH)max=386kJ/m3、磁極面の電気抵抗率は125μΩmであった。\n\n【0074】\n\n実施例5\n\n磁化容易軸方向10mm×3mm×3mmの磁石片(材料は実施例1と同じ)を、実施例1の条件No.1と同様の手法で表面酸化処理し、10個×7個並べて軟Feの針金で縛り、プレス方向と磁化容易軸10mmの方向が一致するように高強度カーボンダイス内にセットすると共に、隙間にDy2O3粉末を充填してホットプレス処理した。加圧力を49MPaとし、真空中、900℃で1時間保持した後、Arガスを導入して冷却し、取り出した。得られた磁石は、概略寸法が磁化容易方向10mm×30mm×21mmであった。\n\n【0075】\n\n得られた磁石に、Ar中、520℃、1時間の時効熱処理を施した後、磁極端面のみ研削加工し、磁石特性の測定、積層方向の電気抵抗率測定を行った。その結果、Br=1.43T、HcJ=1.32MA/m-1、(BH)max=394kJ/m3、磁極面の電気抵抗率は120μΩmであった。\n\n【0076】\n\n実施例6\n\n29.0Nd-1.0Dy-0.98B-1.0Co-0.2Al-0.1Cu-残部Fe(数字は質量%を示す)の組成の焼結体を、既知の粉末冶金法で得た。磁石片中の不純物は、酸素0.2%、炭素0.06%であり、磁気特性は、Br=1.45T、HcJ=1.14MA/m-1、(BH)max=404kJ/m3であった。この焼結体から、磁化容易軸方向10mm×2mm×2mmの磁石片Aを切り出した。\n\n【0077】\n\n25.0Nd-5.0Dy-0.98B-1.0Co-0.2Al-0.1Cu-残部Fe(数字は質量%を示す)の組成の焼結体を、既知の粉末冶金法で得た。磁石片中の不純物は、酸素0.2%、炭素0.06%であり、磁気特性は、Br=1.35T、HcJ=1.73MA/m-1、(BH)max=352kJ/m3であった。この焼結体から、磁化容易軸方向10mm×2mm×2mmの磁石片Bを切り出した。\n\n【0078】\n\n上記磁石片A、Bを、それぞれ、AはNd2O3粉末、BはDy2O3粉末中に埋め込み、表層改質処理としてホットプレス装置を用いてAr雰囲気中、加圧力49MPa、700℃にて2時間の酸化物拡散処理を行った。ぞれぞれの磁石片を取り出し、被着した残存粉末をふき取った後、まずAを36個(6×6)並べ、その外側にBを64個、2列に並べ、磁化容易方向10mm×20mm×20mmに組み立て、軟鉄の針金で軽く巻いた。この組立体を耐熱ガラスに真空封入し、HIP装置に装填した。HIP装置の加圧はArガスを用い、処理温度を800℃としてこの温度で50MPaの圧力となるよう圧力を調整し、HIP処理を行った。\n\n【0079】\n\n得られた磁石に、Ar中、520℃、1時間の時効熱処理を施した後、磁極端面のみ研削加工し、磁石特性の測定、積層方向の電気抵抗率測定を行った。この方法で得られた磁\n\n石の特性は、Br=1.38T、HcJ=1.72MA/m-1、(BH)max=364kJ/m3、磁極面で測定した電気抵抗率は115μΩmであった。\n\n【産業上の利用可能性】\n\n【0080】\n\n本発明よるR-T-B系焼結磁石は、モータ、アクチュエータ等に好適であり、特に、エアコン用のコンプレッサモータ、自動車のパワーステアリング用モータ、ハイブリッド自動車用の駆動モータ、発電機等に最適である。\n\n【図面の簡単な説明】\n\n【0081】\n\n【図1】板状磁石片の厚み寸法の変化による電気抵抗率と渦電流損失の変化を示すグラフである。', '技术领域\n\n[0001]\n\n制造用于电动机，致动器等的R-Fe-B基烧结磁体的方法本发明涉及一种制造用于电动机，致动器等的R-Fe-B基烧结磁体的方法。\n\n背景技术\n\n[0002]\n\nR-T-B型磁铁，特别是烧结磁铁，由于其优异的性能和相对低的成本，已经在所有领域中使用。特别是在最近几年，用于空调，汽车动力转向电动机的压缩机马达，被大量用于驱动电动机/发电机或类似的用于混合动力车辆，已利用节约能源，减少对环境的影响。\n\n[0003]\n\n然而，诸如马达，在环境中的外部磁场，以增加和变化，涡电流在内部磁铁产生，或降低电动机效率，它可能会导致电机本身的温度上升是不利的。虽然目前的情况是有利的，考虑涡流损耗的使用仍然RTB系烧结磁铁，进一步推进效率提高了磁体的电阻，损失由于在可能的最小的涡流是必要的。\n\n[0004]\n\n的R-T-B系粘结磁铁，因为它含有树脂粘合剂的15％至40％的体积比，其是绝缘体，比烧结磁铁，电阻是由一个数字或多个较大。但是，粘合剂的体积会降低性能。另外，几乎没有可以承受高温的实用树脂，并且还存在不能获得能够承受工作环境温度的磁体的问题。\n\n[0005]\n\n即使在R-T-B基烧结磁体中，也已经研究了各种增加电阻的方法。例如，在专利文献1中，和绝缘性粉体状磁性粉末的混合物和烧结的方法已被提出，它分别是有效的碱金属氟化物，碱土金属，稀土类金属作为绝缘体已被披露。另外，专利文献2提出了一种混合电稀土氧化物，烧结该混合物，并在晶界处积累氧化物以增加电阻的方法。\n\n[0006]\n\n此外，所引用的文献3中，考虑到磁铁组合物的反应，氧化硼加入，最后形成的稀土氧化物或稀土复合氧化物在晶界，所引用的文献4中，绝缘层的方法形成为分层形状，并提出了制造该形状的方法。\n\n[专利文献1]日本未审查专利公开No.10-163055\n\n[专利文献2]日本未审查专利公开No.10-83908\n\n[专利文献3]日本未审查专利公开No.2002-64010\n\n[专利文献4]日本专利申请公开No.2001-68317\n\n发明内容\n\n发明内容\n\n[0007]\n\n然而，在根据所引用的文献1和2中的方法中，为了充分地提高电阻会增加的氟化物或氧化物的量，绝缘材料必须是形成一个网络，磁体的特性并且难以同时实现两个电阻。另外，存在由于添加的绝缘体和磁体部件之间的反应而使磁性劣化的危险。\n\n[0008]\n\n此外，即使在根据所引用的文献3的方法中，要求以增加的电阻（=稀土氧化物或复合氧化物）的相应的量的非磁性相，磁特性降低是不可避免的。\n\n[0009]\n\n此外，在根据所引用的文献4中，填充有绝缘材料的混合粉末，并交替地在粉末成型填充在几次的磁性粉末的方法中，它需要加压的复杂的步骤，也将绝缘体混合粉末，烧结性能即使在考虑到这样的磁性粉末混合，不一定能形成叠层绝缘层，则存在绝缘不充分的问题。此外，由于导电层是只具有二维扩展不能生产一种形式，存在涡电流减少的效果变得不充分的担忧。\n\n[0010]\n\n本发明是为了解决上述以往的问题，一个相对简单的过程，高绝缘性，优异的涡电流减少的效果，同时具有高的磁特性和高电阻的RTB系烧结磁铁并提供其制造方法。\n\n发明内容\n\n[0011]\n\n根据权利要求1的一种制造RTB系烧结磁铁的方法中，多个RTB系烧结磁铁片（R是钕，镨，镝，和Tb中的至少一种，或者钕或Pr一直是T总是含有Fe，可以用Co代替高达50％的T）\n\n对多个磁体片的每个磁体表面进行氧化处理或氟化处理的步骤，\n\n在氧化处理或氟化处理之后组装多个磁体碎片以形成组件的步骤，\n\n并对组件进行综合热处理。\n\n[0012]\n\n是根据权利要求1的用于制造根据权利要求2的RTB系烧结磁铁的方法的方法，并且其特征在于，氧化处理或氟化物处理的氧化性气体或气体的氟化物在执行到。\n\n[0013]\n\n在氧化物粉末或氟化物粉末，根据权利要求1，氧化或氟化处理，根据权利要求3的制造RTB系烧结磁铁，在制造方法中，包埋的各磁铁片方法，并进行热处理。\n\n[0014]\n\n根据权利要求4的制造RTB系烧结磁铁的方法是根据权利要求3，且其中所述方法中的氧化物粉末或氟化物粉末，稀土氧化物粉末或稀土氟化物粉末到。\n\n[0015]\n\n根据权利要求4，稀土，至Pr，钕，铽，其特征在于的Dy，任何一个根据权利要求5的制造R-T-B系烧结磁体，在该制造方法方法。\n\n[0016]\n\n根据权利要求4的集成热处理根据权利要求6的制造R-T-B系烧结磁体，在该制造方法中所述的方法，其特征在于它是一个热压或HIP。\n\n[0017]\n\n根据权利要求7的R-T-B基烧结磁体的特征在于通过根据权利要求1的制造方法获得。\n\n发明效果\n\n[0018]\n\n根据本发明，通过相对简单的过程中，高的绝缘性，可以具有优异的涡电流降低的效果获得，同时具有高的磁特性和高电阻的R-T-B系烧结磁体。\n\n[0019]\n\n通过使用根据本发明的电动机，致动器或类似物，涡电流损失降低的R-T-B系烧结磁体，能量效率提高。\n\n[0020]\n\nR-T-B根据本发明的基于烧结磁铁，由于涡电流损失减少，磁体的温度上升被抑制，从而抑制了磁特性的热退磁。\n\n[0021]\n\nR-T-B根据本发明的基于烧结磁体中，为了一体地组装的多个磁铁片，退磁阻力大，无论大小和形状可以总是表现出稳定的磁特性。\n\n具体实施方式\n\n[0022]\n\n下面将描述制造本发明的R-T-B基烧结磁体的方法的每种结构。\n\n[0023]\n\n在基于R-T-B系烧结磁铁片，R表示，钕，镨，镝，从Tb中的至少一种。但是，R必须含有Nd或Pr。更优选地，钕镝，钕Tb时，使用由钕镨铽表示的Nd-PR-Dy或稀土元素的组合，。\n\n[0024]\n\n在稀土元素中，Dy和Tb尤其对提高矫顽力起作用。可以含有其它稀土元素如除了上述元素Ce和La中的量小，则也可以使用混合稀土或钕镨混合物。另外，R可以不是纯元素，在工业可用的范围内没有问题，即使是那些含有制造不可避免的杂质。作为含量，可以采用以往公知的含量，例如，27.0质量％以上，优选的范围为32.0质量％以下。小于27.0％（重量）高的磁特性不能获得特别高的矫顽力，以减少剩余磁通密度超过32.0质量％。\n\n[0025]\n\nT必须含有Fe，50％以下的T可以被Co取代。 Co对于改善温度特性和耐腐蚀性是有效的，并且通常组合使用10质量％或更低的Co和余量的Fe。可以采用常规已知的含量，并且优选的范围是例如63.0质量％以上且72.5质量％以下。其小于63.0％（重量）减少了剩余磁通密度，为了使矫顽力的降低超过72.5质量％。\n\n[0026]\n\nB的含量可以是已知的含量，例如，0.90质量％至1.30质量％是优选的范围。不能获得高的矫顽力小于0.90％（重量）是不优选的，以降低剩余磁通密度超过1.30质量％。更优选地，0.95重量％至1.05重量％，B   -  [R 或H  cJ的可以得到改善。\n\n[0027]\n\nB的一部分可以用C代替。 C取代可以改善磁体的耐腐蚀性并且是有效的。在B + C的情况下，内容被转换到B的原子的取代数原子C数，优选为在上述B的浓度的范围内。\n\n[0028]\n\n除了上述元素之外，还可以添加M元素以提高矫顽力。元素M是至少一种铝，硅，钛，钒，铬，锰，镍，铜，锌，镓，锆，铌，钼，铟，锡，铪，钽，W的添加量优选为2.0质量％以下。如果其超过2.0质量％，则剩余磁通密度降低。\n\n[0029]\n\n除了上述元素之外，还可以容忍不可避免的杂质。例如，选自Fe，或铬，铝，其为从Fe-B（硼铁）混合，和Si，Cu等的污染的Mn。\n\n[0030]\n\n具有上述组合物中，已知的粉末冶金方法，即R-T-B系烧结磁铁片，能够以产生合金铸造，铣削，成型，烧结和热处理。\n\n[0031]\n\n在合金的铸造中可以采用已知的方法，其中，带铸法是优选的。根据带铸法，例如，可以获得厚度为约0.1mm至5mm的铸件。将得到的板坯，富R相微细分散，主要R相 2 铁 14  B相0.1Myuemu〜50myuemu的短轴尺寸，它具有极细的柱状结构，其长轴尺寸为约5μm至约板厚。由于存在这种柱状结构，可以获得高磁性。代替带铸法，可以采用离心铸造法。代替熔融和合金化步骤，可以通过直接还原扩散法制备上述组成的合金。\n\n[0032]\n\n通过已知方法将所得合金粉碎至1μm至10μm的平均粒径。这种合金粉末可以通过进行两种粉碎，粗粉碎步骤和精细粉碎步骤来适当地制备。粗粉碎可以进行和氢闭塞粉碎法，通过使用盘磨机机械研磨法。另外，研磨可进行喷射研磨法，球磨机，机械研磨法，如超微磨碎机。\n\n[0033]\n\n通过上述粉碎获得的细粉碎粉末通过使用已知的模塑技术形成各种形状。成型，但使用通常可通过形成面向后的PM等静压的脉冲和橡胶模具的方法来进行磁场压制成型的方法来进行。\n\n[0034]\n\n如现有的细碎粉末的液体润滑剂，硬脂酸锌和脂肪酸酯模制，模制密度的均匀性，为了提高成型时的脱模，固体润滑剂中送粉的效率和/或细碎的粉末。相对于100重量份的粉末，添加量优选为0.01重量份至5重量份。\n\n[0035]\n\n成型后的成型体可以通过公知的方法进行烧结。烧结温度优选为1000℃至1180℃，烧结时间优选为约1至6小时。烧结后的烧结体进行预定的热处理。热处理条件是400℃至600℃的温度和约1至8小时的时间。\n\n[0036]\n\n在所得的磁体本体，氧（重量）或更少的0.5％，0.2％或更少的氮气，优选氢0.01％（重量）或更少。\n\n[0037]\n\n基于R-T-B系烧结磁体块，以尽量减少涡流损耗小的尺寸，但更薄的是优选的，实际上，可以由磁特性，处理容易性来确定。\n\n[0038]\n\n磁片的厚度（最小维方向），按照切割或研磨的典型金刚石砂轮，将发生由处理降解小于或等于1mm的磁体性能明确的负面影响。即使使用具有小加工劣化的内圆周刀片切割机或线锯，也存在加工劣化的影响，并且厚度的下限实际上为0.3mm。\n\n[0039]\n\n此外，当磁体片的厚度，增加键合界面占据了组件的数量，因为薄是不优选的体积分数的磁特性的劣化发生盲目。因此，磁体片的厚度为0.3mm或更大，理想的是2mm或更大。厚度的上限是通过氧化处理或后述，考虑到二次获得矫顽力提高的效果，但不太优选的10毫米氟化物处理。\n\n[0040]\n\n例如，使用在易磁化轴10毫米一个磁铁片×5毫米×5毫米时，4个在横向方向垂直于易轴，垂直方向至六个或安排它，易磁化轴10毫米×20mm的×30毫米的磁体你可以做到。此外，组装和加工集成热处理后，也可以为规定的形状，例如，易磁化轴10毫米×20mm的×30毫米的磁体进行切片在磁化以产生磁铁易轴4毫米×20mm的×30mm的你也可以这样做。\n\n[0041]\n\n另外，在易磁化轴10毫米×5毫米使用薄板磁铁片×30毫米，由通过热压结合通过层压4张5毫米方向，同样的易磁化轴的磁铁为10mm×20mm的×30mm的可以获得。\n\n[0042]\n\n另外，磁铁片，不一定都具有相同的尺寸，以减少使用小或薄的磁体的涡电流的路径是到磁体表面部分大的电阻需要，中心具有大的磁铁它也可以使其像磁铁一样具有特性。\n\n[0043]\n\n制备如上获得的多个R-T-B基烧结磁体片，并且每个磁体片的磁体表面被氧化或氟化。\n\n[0044]\n\n氧化，氟化处理的方法是氧化物埋入磁铁片成粉末或氟化物粉末，热处理10分钟，以在500 8小时至1100℃，在Ar和He，弥漫附着在磁体表面该方法是，或者，如日本专利号3471876，通过氧化性气体Gasufu”处理或氧化处理，可以是用于执行氟化处理的公知的装置。\n\n[0045]\n\n此外，当在磁体片嵌入氧化物粉末或氟化物粉末的状态下使用热压等加压的同时进行热处理时，可以更有效地进行扩散处理。\n\n[0046]\n\n氧化物粉末和氟化物粉末中的每一种可以单独使用或组合使用。可以使用氢氧化物代替氧化物粉末。氢氧化物，当由粉末混合为一个磁铁粉末的磁铁的热处理，通过水的脱水反应过程中被氧化，或者它不能被烧结，虽然磁特性大大降低，磁体作为在本发明中当粘附在一块上时，不必过多考虑脱水反应的不利影响。\n\n[0047]\n\n为了在溶剂中以改善附着到磁体表面上，但是也可以使用粘合剂等时，优选在比情况下，热处理温度低的温度下进行去溶剂化（粘结剂）的处理。\n\n[0048]\n\n氧化物粉末和氟化碳粉末，或者它可以通过喷涂或浸渍的方法使混合物溶解在溶剂中施加于磁体表面上。\n\n[0049]\n\n氧化物粉末和氟化碳粉末，稀土氟化物粉末的氧化物粉末是优选的，稀土元素的类型，磁体的物理性质，考虑成本，可使用镨，钕，铽， Dy是优选的。特别地，重稀土类的氧化物，在使用氟化物的情况下，也能够提高磁铁的矫顽力与重稀土类的少量磁片内部扩散。\n\n[0050]\n\n另外，氧化或氟化反应可以在综合热处理期间同时进行。执行集成热处理绝缘体颗粒与磁铁片组件的表面被覆后，一体也可以在同一时间，以形成接合表面上的绝缘层。\n\n[0051]\n\n氧化或氟化处理是没有必要执行所有构成组件中的磁铁片，它也可以仅应用到处理磁铁片的最大表面部分的涡电流的影响。\n\n[0052]\n\nRTB系烧结磁铁片氧化处理或氟化物处理到磁体表面已经通过以上，任何形状，进行例如用于空调，汽车动力转向用电动机，如用于混合动力汽车的驱动电动机的压缩机马达组装成要使用的形状并进行组装。\n\n[0053]\n\n例如，如上面所讨论的，以产生使用在易磁化轴10毫米磁片×5毫米×5mm的情况下，4个侧面中，易磁化轴10毫米×20mm的×30mm的六个磁体组件布置它竖直你可以。\n\n[0054]\n\n磁片的组件，但没有特别的限制，因为在方向正交的外部磁场的变化而流过涡电流，这是没有必要划分易轴的方向上，将其拆分为正交方向是可取的。然而，存在这样的情况，这取决于在电机上不一定必须在磁体重合的方向的外部磁场的易磁化轴方向，它是可能的情况下，以在易磁化方向，层叠所述磁体分割。\n\n[0055]\n\n顺便提及，磁体片组装，不一定是相同的组合物不需要为高磁化的示例装配磁片，外周部通过设置磁铁片高矫顽力积分的，其中相同的特征，在一状态下的中央附近它也可以是的。这使得可以在保持足以实际使用的去磁容限的同时增加磁化。\n\n[0056]\n\n根据上述组装的组件通过整体热处理集成，以生产R-T-B基烧结磁体。\n\n[0057]\n\n通过使用热压或HIP的热处理进行整合热处理。当使用热压机，例如通过设置组装加工产品，间隙稀土氧化物或稀土氟化物和死亡，或它们的填充有粉末的混合物，与传统的热press-圧升温度通过执行该处理，稀土氧化物或稀土氟化物，或它们的混合物的粉末变得如此施加是用于压力介质人为静水，能够三维地压力。此外，在不使用填充粉末，使用2轴向加压热压，也可以是二维的压力可以二维地接合。\n\n[0058]\n\nHIP处理，公知的方法，例如，通过焊接的袋插入组件插入不锈钢箔袋，真空密封后，和用于进行HIP处理，真空中的耐热玻璃等中，Ar密封的方法除了治疗的气体压力，处理的氧化物粉末和氟化物粉末的方法中，或嵌入在它们的混合物，它也可以采用执行作为HIP处理的方法。在这种情况下，温度升高，耐热玻璃被软化，直到压力施加到变形，有必要保持组装构造，方便地是足够用导线或类似物轻轻并列。\n\n[0059]\n\nHIP处理的条件下，组件的尺寸，由磁铁片，已知的条件，例如数量，温度600℃至950℃，保持时间0.1小时至10小时而变化等，为10MPa〜100MPa的压力下你可以。\n\n[0060]\n\n代替热压，也可以使用带电烧结法或放电等离子体烧结法。在这种情况下，当磁体片主体通电并接合时，绝缘层可能会部分断裂。因此，考虑使用高导电率石墨模具加热骰子等通电方法毫无疑问。然而，由于稀土氧化物在600℃或高于室温时具有2至3个数量级的导电率，因此实际上没有破裂烧结方法显着损害绝缘。在堆叠磁体片的情况下，可以采用仅使用冲头加压而不使用模具的方法。\n\n[0061]\n\n通过整体热处理集成的R-T-B基烧结磁体可以原样用于各种目的，或者可以通过进一步加工分割和使用。此外，在表面研磨之后，可以应用各种表面处理。此外，积分热处理后，磁体的矫顽力调整为主要目的，可以进行400℃的热处理，以700℃，4小时1分钟。\n\n[0062]\n\n整合之后RTB系烧结磁铁是内部二维或三维体，由平坦绝缘膜，由于状态以规则的隔室被绝缘，涡流损失大幅度降低，电动机，执行器等，提高了能量效率。\n\n[0063]\n\n此外，由于涡电流损失减少，磁体的温度上升被抑制，所以能够进一步降低热降解磁量磁特性，整体地组装的多个磁铁片，退磁阻力大，无论尺寸或形状如何，都可以始终显示出稳定的磁特性。\n\n[实施例]\n\n[0064]\n\n例1\n\n通过已知的粉末冶金方法获得具有30.0Nd-0.98B-1.0Co-0.2Al-0.1Cu-余量Fe（数字表示质量％）的组成的烧结磁体片。磁性如下：B  r  = 1.46 T，H  cJ  = 1.02 MA / m  -1 ，（BH） max  = 409kJ / m  3 。\n\n[0065]\n\n用金刚石切割机切割该磁片，并用表面研磨机研磨，得到20mm（易磁化方向）×30mm×2mm的板形。将板状磁铁片嵌入各种稀土氧化物或氟化物粉末中，并在表1所示的条件下在Ar气氛下进行表面处理作为表面层改性处理。结果，在磁性材料的非常表面层部分中形成扩散层，并形成Nd氧化物，氟化物或氟氧化物作为最外层部分。使用钢丝刷除去附着在表面层部分上的过量氧化物或氟化物粉末。\n\n[0066]\n\n然后，将所得的表面改性处理过的板磁体块，使用压力下的热压装置，以重叠的方向层叠10张在2毫米，示意厚度为20毫米，和扩散接合的方向。热压在真空下进行，并在表1所示的条件下进行处理。冲头由高密度碳制成，加压设定为约50MPa，并且在加热期间保持恒定压力。处理后，将其恢复到Ar气氛，冷却，取出，结果将10块平板磁铁片合并。而且，没有观察到用碳冲头焊接。\n\n[0067]\n\n取出集成磁铁，在Ar中在520℃下进行1小时的时效热处理，然后仅研磨磁极端面，测量磁铁特性和层压方向上的电阻率的测量。结果如表1所示。在所有条件下，垂直于堆叠方向的方向上的电阻率约为1.6μΩm，并且与原始磁体片的电阻率相同。\n\n[0068]\n\n[表1]\n\n[0069]\n\n例2\n\n对板状磁铁片的厚度进行各种变更，在实施例1的No.1所示的条件下进行综合热处理，制作烧结磁铁。烧结磁体的最终形状在易磁化方向上为4mm×20mm×在层叠方向上为32mm。图1示出了此时的磁体特性，层叠方向上的电阻的测量值，以及当并入电动机中时的涡流损耗（标准化为未堆积为1的体磁体）。另外，图1中的横轴上的厚度是指板状磁铁片的层叠方向的厚度。\n\n[0070]\n\n例3\n\n尝试进行表面改性处理的方法，将Dy氢氧化物作为凝胶以无定形状态沉积在溶液中，用于平板磁片的溶液，并通过单次热压同时进行重整和扩散粘合。 。为了制备凝胶，将氨水加入到Dy硝酸盐水溶液中以沉淀。将其在没有充分干燥的情况下施加到板状磁体片的表面上，并在Ar气流中在80℃下干燥，然后层压板磁体片并热压。热压，考虑到氧化钾和热分解，在真空中，并且每个保持1小时，在300℃500℃，然后加热至800℃，30分钟后拿着被导入Ar冷却。\n\n[0071]\n\n所获得的磁体约为20mm（易磁化方向）×30mm×20.5mm（层叠方向），并且在稍微层叠方向上的尺寸增加了绝缘层的厚度。估计绝缘层的平均厚度约为0.05mm。在Ar中在520℃下进行1小时的时效热处理之后，仅在磁极的端面上进行研磨以测量磁体特性并测量层压方向上的电阻率。其结果是，B   -  [R  = 1.38T，H  cJ的 = 1.29MA /米 -1 ，（BH）最大 = 368kJ / m    3 ，堆叠方向的电阻率为175μΩm。\n\n[0072]\n\n例4\n\n磁片在易磁化轴方向10毫米×3mm的×3毫米（该材料是相同的实施例1中），并且如在实施例1的条件1号相同的方法进行表面氧化处理，在碳的高强度模具具有为40mm到内径排列在水平10块，用台在高度方向上重叠的七个阶段，和热压填充有镝 2  0  3 粉末在该间隙中。将压力设定为49MPa并在900℃下保持真空2小时，然后引入Ar气冷却并取出。所获得的磁体在易磁化方向上具有大约10mm×30mm×21mm的尺寸。\n\n[0073]\n\n将得到的磁铁在Ar中在520℃下进行时效热处理1小时，然后仅对磁极端面进行研磨处理以测量磁体特性并测量层压方向上的电阻率。其结果是，B   -  [R  = 1.42T，H  cJ的 = 1.32MA /米 -1 ，（BH）最大 = 386kJ / m  3 ，极面的电阻率为125μΩm。\n\n[0074]\n\n例5\n\n磁片在易磁化轴方向10毫米×3mm的×3毫米（该材料是相同的实施例1中），并以相同的方式进行表面氧化处理，如实施例1的条件1号，软铁10片×7个并排用铁丝捆扎，以及在碳模具设定为高强度，使得按压方向和易磁化轴10毫米匹配的方向，镝 2  0  3 粉末在该间隙中填充和热压。将压力保持在49MPa并在真空下在900℃保持1小时后，引入Ar气体，冷却并取出。所获得的磁体在易磁化方向上具有大约10mm×30mm×21mm的尺寸。\n\n[0075]\n\n向所得的磁体，在Ar中，520℃，进行时效热处理一小时，仅通过研磨磁极端面，磁特性的测量是在堆叠方向上的电阻率的测量。其结果是，B   -  [R  = 1.43T，H  cJ的 = 1.32MA /米 -1 ，（BH）最大 = 394kJ / m  3 ，极面的电阻率为120μΩm。\n\n[0076]\n\n例6\n\n所述组合物的烧结体的29.0Nd-1.0Dy-0.98B-1.0Co-0.2Al-0.1Cu-其余为Fe（数字表示重量％）以已知的粉末冶金得到。磁特性如下：B  r  = 1.45 T，H  cJ  = 1.14 MA / m  -1 ，（BH） max  = 404kJ / m  3 。从该烧结体中切出易磁化轴方向为10mm×2mm×2mm的磁体片A.\n\n[0077]\n\n通过已知的粉末冶金方法获得具有25.0Nd-5.0Dy-0.98B-1.0Co-0.2Al-0.1Cu-余量Fe（数字表示质量％）的组成的烧结体。杂质的磁铁片，氧气0.2％，0.06％的碳，磁特性，B   -  [R  = 1.35T，H  cJ的 = 1.73MA /米 -1 ，（BH） max  = 352kJ / m  3 。从该烧结体中切出易磁化轴方向为10mm×2mm×2mm的磁体片B.\n\n[0078]\n\nB是Dy  2  O  3 ，A是Nd  2  O   -  [R  = 1.38T，H  cJ的 = 1.72MA /米 -1 ，（BH特性） max  = 364kJ / m  3 ，并且在极面上测量的电阻率为115μΩm。\n\n[工业适用性]\n\n[0080]\n\n根据本发明R-T-B系烧结磁体，电机是适合的致动器或类似物，特别地，是用于空调最佳压缩机电机，汽车转向马达的功率，用于混合动力汽车，发电机等的驱动马达。\n\n附图说明\n\n[0081]\n\n附图说明图1是表示由板状磁铁片的厚度尺寸的变化引起的电阻率和涡流损耗的变化的曲线图。');
INSERT INTO `os_patent_instruction_text` VALUES (13052, 22881, 'BACKGROUND OF THE INVENTION\n\n[0001]1. Field of the Invention\n\n[0002]The present invention relates to a method of making a material alloy for a rare-earth magnet, a method of making a material alloy powder for a rare-earth magnet, and a method for producing a sintered magnet using the rare-earth magnet material alloy powder.\n\n[0003]2. Description of the Related Art\n\n[0004]A neodymium-iron-boron based magnet has a higher maximum energy product than any of various types of magnets, and is relatively inexpensive. That is why such a magnet has been used more and more often as an important part of an HDD, an MRI or a motor in a broad variety of electronic devices.\n\n[0005]A neodymium-iron-boron based magnet is a magnet including Nd2Fe14B type crystals as its main phase and is sometimes called an “R-T-B based magnet” more generically, where R is a rare-earth element, T is a transition metal element, most of which is Fe but which may also include Ni and Co, and B is boron. However, since B may be partially replaced with an element such as C, N, Al, Si and/or P, at least one element selected from the group consisting of B, C, N, Al, Si and P will be referred to herein as “Q” and a rare-earth magnet, which is usually called a “neodymium-iron-boron based magnet” will be referred to herein as an “R-T-Q based rare-earth magnet” more broadly. In an R-T-Q based rare-earth magnet, R2T14Q crystal grains form its main phase.\n\n[0006]A material alloy powder for an R-T-Q based rare-earth magnet is often made by a process including a first pulverization process step for coarsely pulverizing the material alloy and a second pulverization process step for finely pulverizing the material alloy. For example, in the first pulverization process step, the material alloy is coarsely pulverized to a size of several hundreds of micrometers or less by a hydrogen decrepitation process. In the second pulverization process step, the coarsely pulverized material alloy (coarsely pulverized powder) is finely pulverized to a mean particle size of about several micrometers using a jet mill pulverizer, for example.\n\n[0007]The magnet material alloy itself may be made by any of a number of methods, which are roughly classified into the following two types. The first type is an ingot casting process, in which a molten alloy with a predetermined composition is poured into a die and cooled relatively slowly. The second type is a rapid cooling process such as a strip casting process and a centrifugal casting process, in which a molten material alloy with a predetermined composition is rapidly cooled through a contact with a single roller, twin rollers, a rotary disk or a rotary cylindrical die, thereby making a solidified alloy, which is thinner than an ingot cast alloy, from the molten alloy.\n\n[0008]In the rapid cooling process, the molten alloy is cooled at a rate of 101° C./s to 104° C./s. The rapidly cooled alloy made by the rapid cooling process has a thickness of 0.03 mm to 10 mm. The molten alloy starts to be solidified on the surface that has contacted with the chill roller (i.e., a roller contact surface). From the roller contact surface, crystal grows in the thickness direction into the shape of needles. The resultant rapidly cooled alloy has a microcrystalline structure including an R2T14Q crystalline phase having minor-axis sizes of 3 μm to 10 μm and major-axis sizes of 10 μm to 300 μm and R-rich phases dispersed on the grain boundary of the R2T14Q crystalline phase (i.e., a phase including a rare-earth element R at a relatively high concentration). The R-rich phases are nonmagnetic phases in which the concentration of the rare-earth element R is relatively high, and has a thickness (which corresponds to the width of the grain boundary) of 10 μm or less.\n\n[0009]As the rapidly cooled alloy has been cooled in a shorter time than an alloy made by the conventional ingot casting process (i.e., the ingot cast alloy), the rapidly cooled alloy has a fine structure and has smaller crystal grain sizes. In addition, the crystal grains are distributed finely, the grain boundary has a wide area, and the R-rich phases are distributed thinly over the grain boundary. Such a good distribution of the R-rich phases improves the sinterability. That is why a rapidly cooled alloy has been used more and more often as a material to make an R-T-Q based rare-earth sintered magnet with good properties.\n\n[0010]If a rare-earth alloy (especially a rapidly cooled alloy) is coarsely pulverized by a so-called “hydrogen pulverization process”, in which the alloy is made to occlude hydrogen gas once (and which will be referred to herein as a “hydrogen decrepitation process”), the R-rich phases present on the grain boundary will react with hydrogen and expand. As a result, the alloy tends to crack from the R-rich phase portions (i.e., grain boundary portions). Therefore, the R-rich phases tend to be exposed on the surfaces of powder particles, which have been obtained by pulverizing the rare-earth alloy by the hydrogen pulverization process. Besides, in the rapidly cooled alloy, the R-rich phases have such small sizes and have been distributed so uniformly that the R-rich phases are exposed on the surface of the hydrogen-pulverized powder particularly easily.\n\n[0011]Such a pulverization method using the hydrogen decrepitation process is disclosed in U.S. patent application Ser. No. 09/503,738, for example.\n\n[0012]A technique of substituting Dy, Tb, and/or Ho for a portion of a rare-earth element R to increase the coercivity of such an R-T-Q based rare-earth magnet is known. At least one element selected from the group consisting of Dy, Tb and Ho will be referred to herein as “RH”.\n\n[0013]However, the element RH that has been added to the R-T-Q based rare-earth magnet material alloy will be present not only in the R2T14Q phase as the main phase but also in the grain boundary phase substantially uniformly after the molten alloy has been rapidly cooled. The element RH, present in those grain boundary phases, does not contribute to increasing the coercivity, which is a problem.\n\n[0014]The high concentration of the element RH in the grain boundary will decrease the sinterability, which is also a problem. This problem becomes non-negligible if the ratio of the element RH to the overall material alloy is 1.5 at % or more and gets serious once this ratio has exceeded 2.0 at %.\n\n[0015]Also, the grain boundary phase portions of the solidified alloy easily turn into a superfine powder (with particle sizes of 1 μm or less) as a result of a hydrogen decrepitation process and a fine pulverization process. Even if those portions have not changed into the superfine powder, they tend to have exposed powder surfaces. The superfine powder is likely to cause oxidation and firing problems and does affect the sinterability. That is why the superfine powder is usually removed during the pulverization process. A rare-earth element that is exposed on the surface of powder particles with particle sizes of 1 μm or more is oxidized easily and the element RH is oxidized more easily than Nd or Pr. Thus, the element RH, present in the grain boundary phase of the alloy, produces a chemically stable oxide and tends to get precipitated continuously in the grain boundary phase without substituting for the rare-earth element R in the main phase.\n\n[0016]Consequently, portions of the element RH that are present in the grain boundary phase of a rapidly cooled alloy cannot be used effectively to increase the coercivity. The element RH is a rare-to-find element and is expensive, too. For that reason, to use valuable natural resources more efficiently and to cut down the manufacturing cost, it is strongly recommended to avoid such a waste of that precious element.\n\n[0017]To overcome these problems, Patent Document No. 1 proposes that a rapidly cooled and solidified alloy, made by a strip casting process, be subjected to a heat treatment process at a temperature of 400° C. to 800° C. for 5 minutes to 12 hours to move the heavy rare-earth element from the grain boundary into the main phase and set the concentration of that element higher in the main phase.\n\n[0018]Patent Documents Nos. 2 and 3 also disclose that the process of rapidly cooling a molten alloy should be controlled to regulate the structure of the resultant rapidly cooled alloy, not to increase the concentration of Dy in the main phase.\n\n[0019]Specifically, Patent Document No. 2 proposes that in order to further reduce the grain size of the rapidly cooled alloy structure, the process of rapidly cooling a molten alloy be divided into the two stages of first cooling and second cooling and that the cooling rates in the respective stages be controlled within particular ranges.\n\n[0020]Patent Document No. 3 proposes that just after having been made by getting a molten alloy cooled rapidly by a chill roller, a thin-strip rapidly cooled and solidified alloy be stored in a container to have its temperature controlled. According to the method disclosed in Patent Document No. 3, the average cooling rate is controlled to the range of 10° C./min to 300° C./min when the temperature of the alloy falls from 900° C. to 600° C. during the rapid cooling process, thereby controlling the distribution of the R-rich phases.[0021]Patent Document No. 1: Japanese Patent Application No. 2003-507836,[0022]Patent Document No. 2: Japanese Patent Application Laid-Open Publication No. 8-269643, and[0023]Patent Document No. 3: Japanese Patent Application Laid-Open Publication No. 2002-266006.\n\nSUMMARY OF THE INVENTION\n\n[0024]However, these conventional techniques have the following drawbacks.\n\n[0025]According to the method disclosed in Patent Document No. 1, the rapidly cooled alloy is once cooled to a temperature at which the element does not diffuse anymore (e.g., to room temperature) and then heated in a different furnace from the rapid cooling machine, thereby carrying out the heat treatment process at 400 to 800° C. To conduct the heat treatment process in this manner after the rapid cooling is finished, an additional process of heating the rapidly cooled alloy to the heat treatment temperature is needed, thus complicating the manufacturing process. Besides, the crystal grains will grow excessively and the coercivity will decrease.\n\n[0026]Likewise, according to the methods disclosed in Patent Documents Nos. 2 and 3, the grain sizes of the rapidly cooled alloy structure can be reduced and the R-rich phases can be distributed uniformly, but no particular rare-earth element such as Dy can be diffused from the grain boundary into the main phase.\n\n[0027]In order to overcome these problems, a primary object of the present invention is to provide a method of producing an R—Fe-Q based rare-earth magnet that can increase the coercivity effectively by concentrating Dy, Tb and Ho in the main phase without complicating the manufacturing process.\n\n[0028]A method of making a material alloy for an R-T-Q based rare-earth magnet according to the present invention includes the steps of: preparing a melt of an R-T-Q based rare-earth alloy, where R is rare-earth elements, T is a transition metal element, Q is at least one element selected from the group consisting of B, C, N, Al, Si and P, and the rare-earth elements R include at least one element RL selected from the group consisting of Nd, Pr, Y, La, Ce, Pr, Sm, Eu, Gd, Er, Tm, Yb and Lu and at least one element RH selected from the group consisting of Dy, Tb and Ho; cooling the melt of the alloy to a temperature of 700° C. to 1,000° C. as first cooling process, thereby making a solidified alloy; maintaining the solidified alloy at a temperature within the range of 700° C. to 900° C. for 15 seconds to 600 seconds; and cooling the solidified alloy to a temperature of 400° C. or less as a second cooling process.\n\n[0029]In one preferred embodiment, the step of maintaining the solidified alloy at a temperature within the range includes the step of decreasing the temperature of the solidified alloy at a temperature decrease rate of 10° C./min or less or the step of increasing the temperature of the solidified alloy at a temperature increase rate of 1° C./min or less.\n\n[0030]In another preferred embodiment, the first cooling process includes the step of decreasing the temperature of the melt of the alloy at a cooling rate of 102° C./s to 104° C./s.\n\n[0031]In still another preferred embodiment, the second cooling process includes the step of decreasing the temperature of the solidified alloy at a cooling rate of 10° C./s or more.\n\n[0032]In yet another preferred embodiment, the element RH accounts for at least 5 at % of the rare-earth elements included.\n\n[0033]In yet another preferred embodiment, just after the second cooling process is finished, the atomicity ratio of the element RH included in the R2T14Q phase of the solidified alloy is higher than that of the element RH to the overall rare-earth elements.\n\n[0034]In yet another preferred embodiment, just after the second cooling process is finished, the atomicity ratio of the element RH included in the R2T14Q phase of the solidified alloy is more than 1.1 times as high as that of the element RH to the overall rare-earth elements.\n\n[0035]In yet another preferred embodiment, the rare-earth elements R account for 11 at % to 17 at % of the overall alloy, the transition metal element T accounts for 75 at % to 84 at % of the overall alloy, and the element Q accounts for 5 at % to 8 at % of the overall alloy.\n\n[0036]In yet another preferred embodiment, the alloy further includes at least one additional element M that is selected from the group consisting of Ti, V, Cr, Mn, Ni, Cu, Zn, Ga, Zr, Nb, Mo, In, Sn, Hf, Ta, W and Pb.\n\n[0037]In yet another preferred embodiment, the first cooling process includes the step of cooling the melt of the alloy with a rotating chill roller.\n\n[0038]In yet another preferred embodiment, the step of maintaining includes the step of transferring heat from a member that has been heated to a temperature of 700° C. to 900° C. to the rapidly cooled alloy.\n\n[0039]A method of making a material alloy powder for an R-T-Q based rare-earth magnet according to the present invention includes the steps of: decrepitating the R-T-Q based rare-earth magnet material alloy, which has been made by one of the methods described above, by a hydrogen decrepitation process; and pulverizing the R-T-Q based rare-earth magnet material alloy that has been decrepitated.\n\n[0040]In one preferred embodiment, the step of pulverizing the R-T-Q based rare-earth magnet includes finely pulverizing the R-T-Q based rare-earth magnet with a high-speed airflow of an inert gas.\n\n[0041]A method for producing a sintered magnet according to the present invention includes the steps of preparing the R-T-Q based rare-earth magnet material alloy powder by one of the methods described above and making a compact of the powder, and sintering the compact.\n\n[0042]In one preferred embodiment, the step of sintering the compact includes controlling a temperature increase rate at 5° C./min or more when the compact is heated from a temperature of 800° C., at which a liquid phase is produced, to a temperature, at which sintered density reaches a true density, after a dehydrogenation process is finished.\n\n[0043]An R-T-B based rare-earth magnet material alloy according to the present invention is made by the method described above and includes a main phase and an R-rich phase. The concentration of the element RH in a portion of the R-rich phase, which is in contact with an interface between the main phase and the R-rich phase, is lower than that of the element RH in a portion of the main phase, which is also in contact with the interface, and crystal grains that form the main phase have minor-axis sizes of 3 μm to 10 μm.\n\n[0044]According to the present invention, the step of making a solidified alloy by cooling a molten alloy includes the step of maintaining the temperature of the solidified alloy being cooled within the range of 700° C. to 900° C. As a result, a heavy rare-earth element such as Dy can be diffused from the grain boundary into the main phase. Also, according to the present invention, after the cooling process step is finished, there is no need to perform a heat treatment process by heating the solidified alloy, of which the temperature has decreased to around room temperature. Consequently, an alloy that hardly produces an excessive grain growth and that has a very small structure can be obtained and the coercivity can be increased effectively enough by a heavy rare-earth element such as Dy.\n\nBRIEF DESCRIPTION OF DRAWINGS\n\n[0045]FIG. 1 is a graph schematically showing how the temperature of an alloy being rapidly cooled changes with time.\n\n[0046]FIG. 2 is a graph schematically showing how the temperature of an alloy being rapidly cooled changes with time in a preferred embodiment of the present invention.\n\n[0047]FIG. 3 illustrates a configuration for a machine that can be used effectively to carry out the present invention.\n\n[0048]FIG. 4 schematically illustrates the microcrystalline structure of a solidified alloy.\n\nDETAILED DESCRIPTION OF PREFERRED EMBODIMENTS\n\n[0049]According to the present invention, first, a melt of an R-T-Q based rare-earth alloy, where R is rare-earth elements, T is a transition metal element and Q is at least one element selected from the group consisting of B, C, N, Al, Si and P, is prepared. As the rare-earth elements R, this R-T-Q based rare-earth alloy includes at least one element RL selected from the group consisting of Nd, Pr, Y, La, Ce, Pr, Sm, Eu, Gd, Er, Tm, Yb and Lu and at least one element RH selected from the group consisting of Dy, Tb and Ho.\n\n[0050]Next, a solidified alloy is made by rapidly cooling (quenching) a molten alloy with such a composition. The present inventors discovered that by performing the “temperature maintaining process step” to be described in detail later in the process step of making a solidified alloy by rapidly cooling such a molten alloy, the element RH included in the grain boundary phase in the solidified alloy could be moved to the main phase and have an increased concentration in the main phase, thus acquiring the basic idea of the present invention.\n\n[0051]Hereinafter, the temperature maintaining process step to be carried out according to the present invention will be described with reference to FIG. 1.\n\n[0052]FIG. 1 is a graph schematically showing how the temperature of an alloy being rapidly cooled changes with time. In this graph, the ordinate represents the temperature of the alloy and the abscissa represents the time that has passed since the rapid cooling process step was started.\n\n[0053]In the example shown in FIG. 1, a first cooling process step S1 is carried out on the molten alloy from a time t0 through a time t1, the temperature maintaining process step S2 is carried out from the time t1 through a time t2, and then a second cooling process step S3 is carried out from the time t2 through a time t3.\n\n[0054]First, suppose a solidified alloy is made by a normal strip casting process in which a thin-strip solidified alloy is made by bringing a molten alloy into contact with the outer surface of a rotating chill roller. In that case, the molten alloy contacts with the surface of the chill roller at the time to, when the chill roller starts dissipating the heat. Thereafter, the molten alloy is further cooled rapidly while traveling on the rotating chill roller, and then comes out of contact with the surface of the chill roller as a solidified alloy at the time t1. The alloy that has left the chill roller usually has a temperature of about 800° C. to about 1,000° C. According to a conventional strip casting process, the temperature of the solidified alloy that has left the chill roller is decreased by a secondary cooling (such as air cooling) and soon reaches a normal temperature (such as room temperature). In the graph shown in FIG. 1, the dashed line indicates how the temperature changes after the time t1 if the molten alloy has been cooled by a normal strip casting process.\n\n[0055]The present invention is characterized by performing the temperature maintaining process step from the time t1 through the time t2 unlike the conventional cooling process. In the graph shown in FIG. 1, the variation in the temperature of the alloy according to the present invention is represented by the solid line. As can be seen from FIG. 1, in the second cooling process step S3 to start at the time t2 when the temperature maintaining process step S2 ends, the alloy temperature is decreased to around room temperature, for example, by natural cooling as in the conventional temperature variation represented by the dashed line.\n\n[0056]In the temperature maintaining process step S2 to be carried out in the present invention, the temperature of the alloy is maintained at a predetermined temperature of 700° C. to 900° C. for 15 seconds to 600 seconds. When the temperature maintaining process step S2 is started, the element RH such as Dy, Tb or Ho would be distributed substantially uniformly either in the grain boundary or in the main phase of the rapidly cooled alloy. However, while the temperature maintaining process step S2 is carried out, a phenomenon that the element RH such as Dy that has been present in the grain boundary diffuses into the main phase and the element RL diffuses from the main phase into the grain boundary is observed. At the temperature of 700° C. to 900° C., the main phase in the solidified alloy has been solidified almost fully. On the other hand, the grain boundary has a lot of rare-earth elements and has a low melting temperature, and therefore, at least a portion of the grain boundary is still in a liquid phase, when the element RH such as Dy would diffuse actively from the grain boundary into the main phase.\n\n[0057]FIG. 4 schematically illustrates the microcrystalline structure of the solidified alloy. The main phase is an R2T14Q phase, while the grain boundary is an R-rich phase including rare-earth elements R at a high concentration. According to the present invention, the alloy is cooled following the temperature profile represented by the solid line in FIG. 1. That is why a microcrystalline structure, in which the element RL such as Nd is included more in the grain boundary shown in FIG. 4 but the element RH such as Dy has a higher concentration in the main phase, can be obtained. As a result, the coercivity can be increased.\n\n[0058]By performing the temperature maintaining process step S2 of the present invention, the crystalline phases of the R-T-B based rare-earth magnet material alloy never grow excessively and Dy is diffused from the R-rich phase into the main phase as shown in FIG. 4. Thus, a Dy concentrated layer is formed around the outer edges of the main phase. As can be seen, by performing the temperature maintaining process step S2, the main phase crystal grains of the R-T-B based rare-earth magnet material alloy, which have been made by the rapid cooling process, can maintain a sharp particle size distribution and yet the coercivity can be increased effectively by the Dy concentrated layer.\n\n[0059]It should be noted that the Dy concentrated layer does not have to be formed all around the outer edges of the main phase but may be present in only a portion of the outer edges. Even in the latter case, the coercivity can still be increased effectively.\n\n[0060]The solidified alloy obtained in this manner is then pulverized into powder by going through a pulverization process. If a hydrogen decrepitation process is performed before the pulverization process, the grain boundary portions tend to be exposed on the surface of the powder. That is why the pulverization process is preferably carried out in an inert gas and the concentration of oxygen in the inert gas is preferably controlled to 1 vol % or less. The reason is that if the concentration of oxygen in the atmospheric gas exceeded 1 vol %, then the powder particles would be oxidized during the fine pulverization process and part of the rare-earth element would be consumed to generate an oxide. If a lot of rare-earth oxides, not contributing to magnetism, were produced in the material alloy powder to make a rare-earth magnet, then the percentage of the R2T14Q based crystalline phase as the main phase would decrease and the performance of the resultant magnet would decline. In addition, oxides of the element RH would be produced more easily on the grain boundary and the concentration of the element RH would decrease in the main phase. Such a fine pulverization process may be carried out using a jet mill, an attritor, a ball mill or any other pulverizer. A pulverization process using a jet mill is disclosed in U.S. patent application Ser. No. 09/851,423, for example.\n\n[0061]Hereinafter, preferred embodiments of the present invention will be described in further detail.\n\n[0062]First, a melt of an R-T-Q based rare-earth alloy is prepared. As the rare-earth elements R, the molten alloy includes at least one element RL selected from the group consisting of Nd, Pr, Y, La, Ce, Pr, Sm, Eu, Gd, Er, Tm, Yb and Lu and at least one element RH selected from the group consisting of Dy, Tb and Ho. In this case, to increase the coercivity sufficiently effectively, the atomicity ratio (i.e., the molar ratio) of the element RH to the overall rare-earth elements is preferably 5% or more. In a preferred embodiment, the rare-earth elements R account for 11 at % to 17 at % of the overall alloy and the element RH contributing to increasing the coercivity accounts for at least 10 at % of the overall rare-earth elements R.\n\n[0063]The transition metal element T includes Fe as a main ingredient (at least 50 at % of the overall T) but may further include other transition metal elements such as Co and/or Ni as the balance. The transition metal elements T account for 75 at % to 84 at % of the overall alloy.\n\n[0064]The element Q includes B as a main ingredient but may further include at least one element selected from the group consisting of C, N, Al, Si and P, which may substitute for B (boron) in a tetragonal Nd2Fe14B crystal structure. The element Q accounts for 5 at % to 8 at % of the overall alloy.\n\n[0065]Besides these main elements, the alloy may further include at least one additional element M that is selected from the group consisting of Ti, V, Cr, Mn, Ni, Cu, Zn, Ga, Zr, Nb, Mo, In, Sn, Hf, Ta, W and Pb.\n\n[0066]A melt of the material alloy with such a composition is brought into contact with, and rapidly cooled and solidified by, the surface of the chill roller of a strip caster. In this preferred embodiment, a machine having a configuration such as that shown in FIG. 3 may be used as the strip caster.\n\n[0067]The machine shown in FIG. 3 includes a crucible 1 that is arranged so as to define any tilt angle and reserve a molten alloy, a tundish 2 that receives the molten alloy from the crucible 1, and a chill roller 4 that rapidly quenches the molten alloy, supplied from the tundish 2, while moving it upward.\n\n[0068]The machine further includes a drum container 6 for subjecting a thin strip of the solidified alloy 5, which has left the surface of the rotating chill roller 4, to the temperature maintaining process step and a motor 7 for rotating and driving this drum container 6. At least the inner wall portions of the drum container 6 have their temperature maintained within the range of 700° C. to 900° C. by a heater (not shown), for example. By adjusting the output of this heater, the solidified alloy 5 can be maintained at a different temperature. If the motor 7 is driven in the temperature maintaining process step, then the thin strip of the solidified alloy 5 will be split into cast flakes with lengths of about several centimeters. However, those cast flakes will be stirred up in the drum container 6 and therefore subjected to the temperature maintaining process substantially uniformly. When the temperature maintaining process step is finished, those cast flakes of the solidified alloy 5 are collected from the drum container 6. After that, the temperature of the flakes is further decreased by letting them be cooled naturally. Once collected from the drum container 6, the solidified alloy 5 is preferably cooled at as high a rate as possible. That is why a cooling gas (e.g., nitrogen gas) may be blown against the alloy.\n\n[0069]If the present invention is carried out by using the machine shown in FIG. 3, the first cooling process step begins when the molten alloy contacts with the surface of the chill roller 5 and continues until the alloy leaves the surface of the chill roller 5. The first cooling process step may be performed for about 0.1 seconds to about 10 seconds. In the first cooling process step, the cooling rate is preferably controlled to the range of 102° C./s to 104° C./s by adjusting the rotational velocity (i.e., the surface peripheral velocity) of the chill roller within an appropriate range (of 1 m/s to 3 m/s, for example). In the first cooling process step, the temperature of the solidified alloy should not be decreased excessively. This is because such an excessive decrease would require an extra heating process step to raise the temperature to a level that is high enough to carry out the temperature maintaining process step after that. For that reason, in the first cooling process step, the temperature of the alloy is preferably decreased to the range of 700° C. to 1,000° C.\n\n[0070]After the first cooling process step, the temperature maintaining process step is carried out while the solidified alloy 5 is still stored in the drum container 6. In the example shown in FIG. 1, the temperature maintaining process step is started as soon as the first cooling process step is finished at the time t1. However, if the machine such as that shown in FIG. 3 is used, the start of the temperature maintaining process step is delayed by the amount of time it takes for the solidified alloy 5 that has left the chill roller 5 to reach the drum container 6. If the start of the temperature maintaining process step is delayed in this manner, then the temperature of the solidified alloy 5 decreases in the meantime. Nevertheless, there will be no problem unless the temperature decreases to less than 700° C. For example, if the temperature setting is 800° C., the temperature of the solidified alloy 5 may have decreased to 750° C. just before the temperature maintaining process step is started. In that case, at least during the initial stage of the temperature maintaining process step, the solidified alloy 5 is heated to somewhere between 750° C. and 800° C. by the drum container 6. Even so, the element RH such as Dy still diffuses from the grain boundary into the main phase and the coercivity can also be increased effectively. Also, since the temperature maintaining process step is performed for as short as 600 seconds or less, the crystal grains will not grow excessively during this process step.\n\n[0071]As can be seen, according to the present invention, the “temperature maintaining process” refers to not only a process of maintaining the temperature of the solidified alloy exactly at a constant level but also to a process of making the alloy pass through the temperature range of 700° C. to 900° C. in a longer time by lowering the cooling rate intentionally compared to natural cooling for a predetermined period of time during the cooling process.\n\n[0072]Generally speaking, a solidified alloy that has been made by a strip casting process, for example, has its heat dissipated through either exposure to the air atmosphere or contact with a transport member after having left the chill roller. That is why to perform the temperature maintaining process step of the present invention, heat needs to be transferred to the solidified alloy against such natural cooling (or heat dissipation). In this sense, the “temperature maintaining process step” of the present invention works as a sort of heat treatment process to be carried out during the cooling process.\n\n[0073]Also, even if one tries to keep the temperature of the solidified alloy constant, some temperature variations are actually inevitable. For example, even when the temperature either falls gently at a temperature decrease rate of 10° C./min or less or rises very slightly at a temperature increase rate of 1° C./min or less, the temperature of the alloy still can be regarded as being kept substantially constant, compared to th', '发明背景 \n\n [0001] 1.发明领域 \n\n [0002] 稀土磁体材料合金的制造方法,稀土磁体材料合金粉末的制造方法以及使用该稀土磁体材料合金的烧结磁体的制造方法 粉末。 \n\n [0003] 2.相关技术的描述 \n\n [0004] 钕铁硼基磁体比各种磁体中的任何一种具有更高的最大能量乘积,并且相对便宜。 这就是为什么这种磁体越来越广泛地用作各种电子设备中HDD,MRI或电机的重要组成部分。 \n\n [0005] 钕铁硼基磁体是包括Nd的磁体 2 铁 14 B型晶体为其主要相,有时更一般地称为“ RTB基磁体”,其中R是稀土元素,T是过渡金属元素,其中大多数是Fe,但也可能包括Ni和Co,  B是硼 然而,由于B可以部分地被诸如C,N,Al,Si和/或P的元素替代,因此将指代选自B,C,N,Al,Si和P的至少一种元素。 本文中将其称为“ Q”,将通常称为“钕铁硼基磁体”的稀土磁体在本文中更广泛地称为“ RTQ基稀土磁体”。 在基于R-T-Q的稀土磁体中,R 2 Ť 14 Q晶粒形成其主相。 \n\n [0006] 用于R-T-Q基稀土磁体的原料合金粉末通常通过包括用于粗粉碎原料合金的第一粉碎步骤和用于精细粉碎原料合金的第二粉碎步骤的工艺来制造。 例如,在第一粉碎处理步骤中,通过氢碎裂处理将原料合金粗粉碎到几百微米或更小的尺寸。 在第二粉碎处理步骤中,例如,使用喷射式粉碎机将粗粉碎的材料合金(粗粉碎的粉末)细粉碎至约几微米的平均粒径。 \n\n [0007] 磁体材料合金本身可以通过多种方法中的任何一种来制造,大致分为以下两种类型。 第一种是铸锭法,其中将具有预定组成的熔融合金倒入模具中并相对缓慢地冷却。 第二种是快速冷却工艺,例如带钢铸造工艺和离心铸造工艺,其中具有预定组成的熔融材料合金通过与单辊,双辊,转盘或旋转的接触而被快速冷却。 圆柱形模具,从而由熔融合金制成比铸锭薄的凝固合金。 \n\n [0008] 在快速冷却过程中,熔融合金以10的速度冷却 1 °C / s至10 4 °C /秒 通过快速冷却工艺制成的快速冷却合金具有0.03mm至10mm的厚度。 熔融合金开始在与冷却辊接触的表面(即辊接触表面)上凝固。 晶体从辊接触​​表面沿厚度方向生长成针状。 所得快速冷却的合金具有包括R的微晶结构 2 Ť 14 Q晶相的短轴尺寸为3μm至10μm,长轴尺寸为10μm至300μm,富R相分散在R的晶界上 2 Ť 14 Q结晶相(即,以较高浓度包含稀土元素R的相)。 富R相是稀土元素R的浓度比较高的非磁性相,其厚度(相当于晶界的宽度)为10μm以下。 \n\n [0009] 由于快速冷却的合金比通过常规的铸锭法制造的合金(即,铸锭合金)在更短的时间内冷却,因此快速冷却的合金具有精细的结构并且具有较小的晶粒尺寸。 另外,晶粒细密地分布,晶界具有宽的面积,并且富R相在晶界上较薄地分布。 富R相的这种良好分布改善了可烧结性。 这就是为什么快速冷却的合金越来越多地用作制造具有良好性能的R-T-Q基稀土烧结磁体的材料的原因。 \n\n [0010] 如果稀土合金(特别是快速冷却的合金)通过所谓的“氢气粉碎工艺”粗粉碎,则该合金一次吸氢(在本文中称为“氢气”) 爆破过程”),存在于晶界的富R相将与氢反应并膨胀。 结果,合金易于从富R相部分(即晶界部分)开裂。 因此,富R相倾向于暴露在粉末颗粒的表面上,该粉末颗粒是通过通过氢粉碎工艺将稀土合金粉碎而获得的。 此外,在快速冷却的合金中,富R相具有如此小的尺寸并且已经均匀地分布,使得富R相特别容易地暴露在氢粉碎粉末的表面上。 \n\n [0011] 在美国专利申请Ser.No.4,593,337中公开了使用氢爆破工艺的这种粉碎方法。 例如第09 / 503,738号。 \n\n [0012] 已知用Dy,Tb和/或Ho代替一部分稀土元素R来增加这种基于R-T-Q的稀土磁体的矫顽力的技术。 从Dy,Tb和Ho组成的组中选择的至少一种元素在本文中将被称为“ R”。 H ”。 \n\n [0013] 但是,元素R H  已添加到R-T-Q基稀土磁体材料合金中的元素不仅会存在于R中 2 Ť 14 在熔融合金被快速冷却之后,Q相作为主要相,但在晶界相中也基本均匀。 元素R H 存在于那些晶界相中的α,没有有助于提高矫顽力,这是一个问题。 \n\n [0014] 高浓度元素R H  晶界处的烧结性降低,这也是一个问题。 如果元素R的比例不容忽视,则此问题变得不可忽略 H  合金的总含量为1.5 at%或更高,并且一旦该比例超过2.0 at%,就会变得严重。 \n\n [0015] 此外,由于氢碎裂处理和精细粉碎处理的结果,固化合金的晶界相部分容易变成超细粉末(粒径为1μm或更小)。 即使那些部分没有变成超细粉末,它们也倾向于具有暴露的粉末表面。 超细粉末可能会引起氧化和烧成问题,并确实会影响烧结性。 这就是为什么通常在粉碎过程中除去超细粉末的原因。 暴露在粒径为1μm或更大的粉末颗粒表面上的稀土元素容易被氧化,并且元素R H  比Nd或Pr更容易被氧化。 因此,元素R H 存在于合金的晶界相中的α,生成化学稳定的氧化物,并且趋向于在晶界相中连续沉淀,而没有在主相中代替稀土元素R。 \n\n [0016] 因此,元素R的部分 H  存在于快速冷却的合金的晶界相中的元素不能有效地用于提高矫顽力。 元素R H  是稀有元素,而且价格昂贵。 因此,为了更有效地利用宝贵的自然资源并降低制造成本,强烈建议避免这种宝贵元素的浪费。 \n\n [0017] 为了克服这些问题,专利文献1提出将通过带材铸造法制造的快速冷却且凝固的合金在400℃至800℃的温度下进行5分钟的热处理。  12小时将重稀土元素从晶界移动到主相中,并将该元素的浓度提高到主相中。 \n\n [0018] 专利文献2和3也公开了应控制快速冷却熔融合金的过程以调节所得快速冷却合金的结构,而不是增加主相中Dy的浓度。 \n\n [0019] 具体地,专利文献2提出,为了进一步减小快速冷却的合金组织的晶粒尺寸,将快速冷却熔融合金的过程分为第一冷却和第二冷却两个阶段,以及 将各个阶段控制在特定范围内。 \n\n [0020] 专利文献3提出,在通过急冷辊使熔融合金迅速冷却后,将迅速冷却且凝固的薄带状合金保存在容器中,进行温度控制。 根据专利文献3中公开的方法,当合金的温度从900℃降至600℃时,将平均冷却速率控制在10℃/ min至300℃/ min的范围内。  C.在快速冷却过程中,从而控制富R相的分布。   [0021]专利文献1:日本专利申请2003-507836[0022] 专利文献2:日本特开平8-269643号公报,以及[0023] 专利文献3:日本特开2002-266006号公报。 \n\n 发明内容 \n\n [0024] 然而,这些常规技术具有以下缺点。 \n\n [0025] 根据专利文献1中公开的方法,将快速冷却的合金一旦冷却至元素不再扩散的温度(例如,至室温),然后在与快速冷却机不同的炉中加热, 从而在400至800℃下进行热处理过程。为了在快速冷却完成之后以这种方式进行热处理过程,需要将快速冷却的合金加热至热处理温度的附加过程,从而使热处理变得复杂。 制造过程。 此外,晶粒将过度生长并且矫顽力将降低。 \n\n [0026] 同样,根据专利文献2和3中公开的方法,可以减小快速冷却的合金结构的晶粒尺寸并且可以富集R富相,但是没有诸如Dy这样的特定稀土元素。 从晶界扩散到主相。 \n\n [0027] 为了克服这些问题,本发明的主要目的是提供一种生产R-Fe-Q基稀土磁体的方法,该方法可以通过将Dy,Tb和Ho集中在主相中而有效地提高矫顽力。 使制造过程复杂化。 \n\n [0028] 根据本发明的用于RTQ基稀土磁体的材料合金的制造方法包括以下步骤:制备RTQ基稀土合金的熔体,其中R是稀土元素,T是过渡金属。  Q是选自B,C,N,Al,Si和P中的至少一种元素,稀土元素R包括至少一种元素R。 L  选自Nd,Pr,Y,La,Ce,Pr,Sm,Eu,Gd,Er,Tm,Yb和Lu和至少一种元素R H  选自Dy,Tb和Ho; 作为第一冷却工艺,将合金的熔体冷却至700℃至1000℃的温度,从而制备凝固的合金; 将固化的合金在700℃至900℃的温度范围内保持15秒至600秒; 作为第二冷却工序,将固化后的合金冷却至400℃以下。 \n\n [0029] 在一个优选的实施方式中,将固化合金保持在该范围内的温度的步骤包括以10℃/ min以下的降温速度降低固化合金的温度的步骤或提高温度的步骤。 在1℃/ min以下的升温速度下固化后的合金的熔点。 \n\n [0030] 在另一个优选实施例中,第一冷却过程包括以10的冷却速率降低合金熔体温度的步骤。 2 °C / s至10 4 °C /秒 \n\n [0031] 在又一优选实施方式中,第二冷却工艺包括以10℃/ s或更高的冷却速率降低固化合金的温度的步骤。 \n\n [0032] 在又一个优选实施例中,元素R H  至少占所含稀土元素的5 at%。 \n\n [0033] 在又一优选实施方式中,在第二冷却过程完成之后,元素R的原子比 H  包含在R中 2 Ť 14 凝固合金的Q相比元素R高 H  整体稀土元素。 \n\n [0034] 在又一优选实施方式中,在第二冷却过程完成之后,元素R的原子比 H  包含在R中 2 Ť 14 凝固合金的Q相比元素R高1.1倍以上 H  整体稀土元素。 \n\n [0035] 在又一个优选的实施方案中,稀土元素R占合金总量的11at%至17at%,过渡金属元素T占合金总量的75at%至84at%,元素Q占合金总量的75at%至84at%。 占整个合金的5at%至8at%。 \n\n [0036] 在又一个优选实施例中,合金还包括至少一种选自Ti,V,Cr,Mn,Ni,Cu,Zn,Ga,Zr,Nb,Mo,In,Sn,  Hf,Ta,W和Pb。 \n\n [0037] 在又一个优选实施例中,第一冷却过程包括用旋转的冷却辊冷却合金熔体的步骤。 \n\n [0038] 在又一优选实施例中,保持步骤包括以下步骤:将热量从已经被加热到700℃至900℃的温度的构件传递到快速冷却的合金。 \n\n [0039] 根据本发明的用于RTQ基稀土磁体的材料合金粉末的制造方法包括以下步骤:使通过上述方法之一制得的RTQ基稀土磁体的材料合金分解。 氢爆破过程; 粉碎已破碎的R-T-Q基稀土磁体材料合金。 \n\n [0040] 在一优选实施例中,粉碎基于R-T-Q的稀土磁体的步骤包括利用惰性气体的高速气流精细粉碎基于R-T-Q的稀土磁体。 \n\n [0041] 根据本发明的烧结磁体的制造方法包括以下步骤:通过上述方法中的一种来制备R-T-Q基稀土磁体材料合金粉末,并将该粉末压制成型,并且将该成型体进行烧结。 \n\n [0042] 在一个优选的实施方式中,烧结成形体的步骤包括:当将成形体从产生液相的800℃的温度加热到800℃时,将升温速率控制在5℃/ min以上。 脱氢过程完成后,烧结密度达到真实密度的温度。 \n\n [0043] 通过上述方法制造根据本发明的R-T-B基稀土磁体材料合金,其包括主相和富R相。 元素R的浓度 H  在与主相和富R相之间的界面接触的富R相的一部分中,比元素R低 H  在主相的也与界面接触的部分中,形成主相的晶粒的短轴尺寸为3μm至10μm。 \n\n [0044] 根据本发明,通过冷却熔融合金来制造凝固合金的步骤包括将被冷却的凝固合金的温度保持在700℃至900℃的范围内的步骤。  Dy等稀土元素可以从晶界扩散到主相中。 另外,根据本发明,在冷却处理步骤完成之后,不需要通过加热温度已经降低到室温附近的凝固合金来执行热处理工艺。 因此,可以得到几乎不产生过度晶粒生长并且具有非常小的结构的合金,并且通过诸如Dy的重稀土元素可以充分有效地提高矫顽力。 \n\n 附图说明 \n\n [0045] 图。 图1是示意性地示出了快速冷却的合金的温度如何随时间变化的图。 \n\n [0046] 图。 图2是示意性地示出在本发明的优选实施方式中被迅速冷却的合金的温度如何随时间变化的曲线图。 \n\n [0047] 图。 图3示出了可以有效地用于实施本发明的机器的构造。 \n\n [0048] 图。 图4示意性地示出了凝固合金的微晶结构。 \n\n 具体实施方式 \n\n [0049] 根据本发明,首先,RTQ基稀土合金的熔体,其中R是稀土元素,T是过渡金属元素并且Q是选自由B,C, 制备N,Al,Si和P。 作为稀土元素R,该R-T-Q基稀土合金包括至少一种元素R。 L  选自Nd,Pr,Y,La,Ce,Pr,Sm,Eu,Gd,Er,Tm,Yb和Lu和至少一种元素R H  选自Dy,Tb和Ho。 \n\n [0050] 接下来,通过快速冷却(淬火)具有这种组成的熔融合金来制造凝固合金。 本发明人发现,通过在随后通过快速冷却这种熔融合金来制造凝固合金的工艺步骤中执行稍后将详细描述的“温度保持工艺步骤”,元素R H  凝固合金中的晶界相中所含的元素可以移动到主相并在主相中具有增加的浓度,从而获得了本发明的基本思想。 \n\n [0051] 在下文中,将参照图2描述根据本发明要执行的温度保持处理步骤。  1。 \n\n [0052] 图。 图1是示意性地示出了快速冷却的合金的温度如何随时间变化的图。 在该图中,纵坐标表示合金的温度,横坐标表示自开始快速冷却步骤以来经过的时间。 \n\n [0053] 在图1所示的例子中, 参照图1,第一冷却工艺步骤S 1  从时间t开始对熔融合金进行 0  通过时间t 1 ,温度保持工序S 2  从时间t开始执行 1  通过时间t 2 ,然后进行第二冷却工艺步骤S 3  从时间t开始执行 2  通过时间t 3 。 \n\n [0054] 首先,假设通过常规的带钢铸造工艺来制造凝固合金,其中通过使熔融合金与旋转的冷却辊的外表面接触来制造薄带状凝固合金。 在那种情况下,在冷却辊开始散热时,熔融合金与冷却辊的表面接触。 之后,熔融合金在旋转的冷却辊上移动的同时进一步被迅速冷却,然后在时间t与凝固辊的表面脱离接触而成为凝固合金。 1 。 离开冷却辊的合金的温度通常为约800℃至约1000℃。根据常规的带铸工艺,通过二次冷却降低了离开冷却辊的凝固合金的温度。  (例如空气冷却)并很快达到正常温度(例如室温)。 在图所示的图中, 在图1中,虚线表示在时间t之后温度如何变化。 1  如果熔融合金已通过常规的带钢铸造工艺冷却。 \n\n [0055] 本发明的特征在于从时刻t开始执行温度保持处理步骤。 1  通过时间t 2  不像传统的冷却过程。 在图所示的图中, 在图1中,根据本发明的合金的温度变化由实线表示。 从图可以看出, 参照图1,在第二冷却工艺步骤S 3  从时间t开始 2  保温步骤S时 2  因此,例如通过如虚线所示的常规温度变化那样的自然冷却,将合金温度降低至室温附近。 \n\n [0056] 在温度保持工序S中 2  为了在本发明中进行,将合金的温度在700℃至900℃的预定温度下保持15秒至600秒。 温度保持工序S时 2  启动后,元素R H  诸如Dy,Tb或Ho之类的元素将基本上均匀地分布在快速冷却的合金的晶界或主相中。 但是,在温度保持工序S中 2  进行,元素R的现象 H  例如,存在于晶界的Dy扩散到主相中,元素R L  从主相扩散到晶界。 在700℃至900℃的温度下,凝固合金中的主相几乎完全凝固。 另一方面,由于晶界具有大量的稀土元素且熔融温度低,因此,当元素R时,至少一部分晶界仍为液相。 H  如Dy会从晶界主动扩散到主相。 \n\n [0057] 图。 图4示意性地示出了固化合金的微晶结构。 主要阶段是R 2 Ť 14 Q相,而晶界是包含高浓度的稀土元素R的富R相。 根据本发明,按照图2中实线所示的温度曲线冷却合金。  1.这就是为什么微晶结构,其中的元素R L  在图6所示的晶界中更多地包含Nd等元素。  4但元素R H  如Dy等在主相中具有较高的浓度,可以获得。 结果,可以提高矫顽力。 \n\n [0058] 通过执行温度保持处理步骤S 2  本发明的R-T-B系稀土类磁铁材料合金的结晶相如图2所示,从不过度生长,Dy从富R相向主相扩散。  4.因此,在主相的外边缘周围形成了Dy浓缩层。 可以看出,通过执行温度保持过程步骤S 2 ,通过快速冷却过程制成的R-T-B基稀土磁体材料合金的主相晶粒可以保持尖锐的粒度分布,但是通过Dy浓缩层可以有效地提高矫顽力。 \n\n [0059] 应该注意的是,Dy浓缩层不必一定在主相的所有外边缘周围形成,而可以仅存在于一部分外边缘中。 即使在后一种情况下,仍可以有效地提高矫顽力。 \n\n [0060] 然后将通过这种方式获得的固化合金通过粉碎过程粉碎成粉末。 如果在粉碎处理之前进行氢脱氢处理,则晶界部分倾向于暴露在粉末的表面上。 因此,优选在惰性气体中进行粉碎处理,并且优选将惰性气体中的氧浓度控制为1体积%以下。 原因是,如果大气中的氧气浓度超过1vol%,则在细粉碎过程中粉末颗粒将被氧化,并且一部分稀土元素将被消耗以产生氧化物。 如果在材料合金粉末中产生了很多对磁性无贡献的稀土氧化物来制成稀土磁体,则R的百分比 2 Ť 14 基于Q的结晶相作为主相将降低,并且所得磁体的性能将降低。 另外,元素R的氧化物 H  会更容易在晶界和元素R的浓度上产生 H  在主要阶段会减少。 可以使用喷射磨,磨碎机,球磨机或任何其他粉碎机来进行这样的精细粉碎过程。 在美国专利申请序列号No.5,828,935中公开了使用喷射式粉碎机的粉碎方法。 例如第09 / 851,423号。 \n\n [0061] 在下文中,将进一步详细描述本发明的优选实施方式。 \n\n [0062] 首先,制备R-T-Q基稀土合金的熔体。 作为稀土元素R,熔融合金包括至少一种元素R。 L  选自Nd,Pr,Y,La,Ce,Pr,Sm,Eu,Gd,Er,Tm,Yb和Lu和至少一种元素R H  选自Dy,Tb和Ho。 在这种情况下,为了充分有效地提高矫顽力,元素R的原子比(即摩尔比) H  稀土元素的含量优选为5%以上。 在一个优选的实施方案中,稀土元素R占合金总量的11at%至17at%。 H  促进矫顽力的贡献至少占稀土元素R总量的10 at%。 \n\n [0063] 过渡金属元素T包括Fe作为主要成分(占总T的至少50at%),但是可以进一步包括其他过渡金属元素,例如Co和/或Ni作为余量。 过渡金属元素T占整个合金的75at%至84at%。 \n\n [0064] 元素Q以B为主要成分,但可以进一步包含选自由C,N,Al,Si和P组成的组中的至少一种元素,该元素可以代替四方Nd中的B(硼)。 2 铁 14 B晶体结构。 元素Q占整个合金的5原子%至8原子%。 \n\n [0065] 除了这些主要元素外,合金还可以包含至少一种选自Ti,V,Cr,Mn,Ni,Cu,Zn,Ga,Zr,Nb,Mo,In,Sn,  Hf,Ta,W和Pb。 \n\n [0066] 具有这种组成的材料合金的熔体与带式连铸机的冷却辊的表面接触并迅速冷却并固化。 在该优选实施例中,具有诸如图1所示的构造的机器被构造成具有如下构造。  3可以用作带材连铸机。 \n\n [0067] 图1中所示的机器包括:  3包括一个坩埚 1  布置成定义任何倾斜角度并保留熔融合金,中间包 2  从坩埚接收熔融合金 1 和冷却辊 4  迅速淬火从中间包供应的熔融合金 2 ,同时向上移动它。 \n\n [0068] 该机器还包括鼓容器 6  用于对凝固的合金薄带进行处理 5 ,它离开了旋转冷却辊的表面 4 ,温度保持工序和电动机 7  用于旋转和驱动该鼓形容器 6 。 至少鼓容器的内壁部分 6 例如,通过加热器(未示出)将它们的温度保持在700℃至900℃的范围内。 通过调节该加热器的输出,可以凝固合金 5  可以保持在不同的温度。 如果电动机 7  在维持温度的步骤中被驱动,然后将凝固的合金薄带 5  将被切成约几厘米长的薄片。 但是,那些铸片会在鼓形容器中被搅动 6  并且因此基本上均匀地经受温度保持过程。 当保温步骤完成时,那些凝固的合金薄片 5  从桶容器中收集 6 。 之后,通过自然冷却薄片的温度来进一步降低薄片的温度。 一旦从桶容器中收集 6 ,凝固合金 5  最好以尽可能高的速率冷却。 这就是为什么冷却气体(例如氮气)可以吹向合金的原因。 \n\n [0069] 如果使用图1所示的机器来实施本发明, 如图3所示,当熔融合金与冷却辊的表面接触时,开始第一冷却工艺步骤。 5  一直持续到合金离开冷却辊表面为止 5 。 第一冷却工艺步骤可以执行约0.1秒至约10秒。 在第一冷却工艺步骤中,冷却速率优选控制在10℃的范围内。 2 °C / s至10 4 通过在适当的范围内(例如1m / s至3m / s)调节急冷辊的旋转速度(即表面圆周速度),以℃/ s为单位。 在第一冷却工艺步骤中,不应过度降低凝固合金的温度。 这是因为这样的过度降低将需要额外的加热处理步骤以将温度升高到足够高的水平以随后执行温度保持处理步骤。 因此,在第一冷却工序中,优选将合金的温度降低至700℃〜1000℃的范围。 \n\n [0070] 在第一冷却工艺步骤之后,在固化合金的同时执行温度保持工艺步骤 5  仍然存储在感光鼓容器中 6 。 在图1所示的例子中, 如图1所示,在时间t第一冷却过程步骤完成后,温度保持过程步骤开始。 1 。 然而,如果诸如图1所示的机器被 使用图3所示的步骤时,保温过程的开始时间延迟了凝固合金所需的时间 5  离开了冷却辊 5  到达鼓容器 6 。 如果以此方式延迟保温步骤的开始,则凝固合金的温度 5  同时减少。 然而,除非温度降低到低于700°C,否则没有问题。例如,如果温度设定为800°C,则凝固合金的温度 5  可能在刚开始保温过程步骤之前已降至750°C。 在这种情况下,至少在保温步骤的初始阶段,凝固的合金 5  鼓容器将其加热到750°C至800°C之间的某个温度 6 。 即使这样,元素R H  如Dy仍从晶界扩散到主相,矫顽力也可以有效提高。 另外,由于将温度保持处理步骤进行至短至600秒或更短,因此在该处理步骤中晶粒不会过度生长。 \n\n [0071] 可以看出,根据本发明,“温度保持过程”不仅是指将凝固的合金的温度精确地保持在恒定水平的过程,而且是指使合金通过温度范围的过程。 与自然冷却相比,在冷却过程中在预定的时间段内有意地降低了冷却速率,从而在更长的时间内将温度从700°C降至900°C。 \n\n [0072] 一般而言,例如,通过带材铸造法制造的凝固合金,在离开冷却辊后,通过暴露于空气中或与输送构件接触而散热。 这就是为什么执行本发明的温度保持处理步骤的原因,热量需要逆着这种自然冷却(或散热)传递到凝固的合金上。 从这个意义上讲,本发明的“保持温度的步骤”是在冷却过程中进行的一种热处理过程。 \n\n [0073] 另外,即使试图使凝固合金的温度保持恒定,实际上也不可避免地会发生一些温度变化。 例如,即使当温度以10℃/ min或更低的降温速率缓慢下降或以1℃/ min或更低的增温速率非常轻微地升高时,合金的温度仍然可以 与正常的冷却过程相比,被认为保持基本恒定。 图。 图2示意性地示出了在温度保持处理步骤S中合金温度逐渐降低的示例(如实线所示)和温度有时升高和有时降低(如虚线所示)的示例。 2 。 在任何情况下,元素R H  Dy等元素也可以从晶界扩散到主相,矫顽力也可以提高。 \n\n [0074] 如果维持温度的处理步骤时间过长,则晶粒可能过度生长,矫顽力可能降低。 因此,优选将温度保持至少15秒但不超过600秒。 \n\n [0075] 通过这样的温度保持处理步骤,至少一个元素R H  选自Dy,Tb和Ho的主相中的浓度增加。 如上所述,保持合金的温度可以在700℃至900℃的范围内任意选择,但优选设定为约700℃至约800℃。 \n\n [0076] 在维持温度的工序结束后进行的第二冷却工序中,优选将固化的合金以10℃/ s以上的冷却速度冷却至常温(即室温附近)。 通过以相对较高的冷却速率冷却合金,可以充分减少晶粒的生长。 由于暴露于大气中的气体,第二冷却工艺步骤有时可以通过自然冷却来实现。 或者,可以通过向凝固的合金吹冷气或使合金与某些冷却构件接触来有意地执行冷却过程。 \n\n [0077] 这一系列工艺步骤优选在真空或惰性气体气氛中进行。 在图1所示的机器中, 如图3所示,第一冷却工艺步骤,温度保持工艺步骤和第二冷却工艺步骤在与空气隔离的腔室中进行。 但是,在第二冷却工艺步骤的后半部分,凝固合金的温度 5  将会降低到相当低的水平。 因此,合金的质量不会由于氧化而降低,例如即使暴露在空气中也不会降低。 因此,可以在腔室外进行第二冷却工序的一部分或全部。 \n\n [0078] 应当注意,不必通过使用诸如图1所示的机器来进行温度保持处理步骤。 在图3中,但是也可以通过任何其他方法执行。 例如,可以在输送离开带钢连铸机的冷却辊的快速冷却的合金的同时进行温度保持处理步骤。 在那种情况下,可以在传送路径上布置加热部分(即,加热器),以减少已经离开冷却辊并被传送的凝固合金的自然散热。 \n\n [0079] 以这种方式制成的快速冷却的合金(即带铸合金)中,R 2 Ť 14 已生产出Q相,其中R为稀土元素,T为过渡金属元素,Q为选自B,C,N,Al,Si和P的至少一种元素 。  R 2 Ť 14 Q相(是主相晶粒)是树枝状晶体,其平均短轴尺寸为3μm至10μm,而长轴尺寸为10μm至300μm。 \n\n [0080] 在刚经过第二冷却工艺步骤的凝固合金(即初生合金)中,元素R的浓度 H  在R中 2 Ť 14 作为主要相的Q相高于其他相(例如晶界相)。 也就是说,元素R H  已经成功地集中在主要阶段。 \n\n [0081] 这意味着通过执行温度保持过程步骤,元素R H  在第一个冷却工艺步骤完成时存在于晶界相部分中的元素已移至R中 2 Ť 14 Q相作为主相,并且在那里具有更高的浓度。 以这种方式,凝固了合金,其中元素R的浓度 H  R较高 2 Ť 14 Q相比其他相,最后可以得到。 在快速冷却的合金中,即使在保持温度的工艺步骤之后,树枝状间隙也几乎没有改变。 因此,R的短轴尺寸 2 Ť 14 Q相几乎不变,仍然在3μm至10μm的范围内。 即使树状晶体已经生长,它们的生长速度在短轴方向上也将是大约1至2μm。 \n\n [0082] 根据本发明,没有采用通过再次加热已经冷却到室温左右的快速冷却的合金来扩散Dy的方法。 因此,可以最小化由这种加热过程引起的晶粒的过度生长,并且可以有效地增强通过稀土元素例如Dy获得的矫顽力增加的效果。 \n\n [0083] 接下来,在通过如上所述的氢爆破工艺使固化的合金破损之后,使用粉碎机例如喷射式粉碎机将合金粉碎成细粉。 这样获得的干粉可以具有例如3.0μm至4.0μm的平均粒径(FSSS粒径)。 气流粉碎机利用已引入预定量氧气的惰性气体的高速气流将原料合金粉碎。 惰性气体中的氧浓度优选被控制为不超过1体积%,更优选为0.1体积%以下。 \n\n [0084] 根据本发明,以这种方式在粉碎过程中控制大气中氧气的浓度,以防止元素R。 H 曾经从晶界相移动到主相中的α,由于氧化而再次移动或沉淀到晶界部分中。 如果粉末中包含大量氧气,则重稀土元素R H  诸如Dy,Tb或Ho之类的化合物会键合到氧上,并经常产生更化学稳定的氧化物。 在本发明中采用的合金结构中,氧在晶界相中比在主相中更充分地分布。 这就是为什么元素R H  主相中的元素会再次扩散到晶界相中,并在那里被消耗而产生氧化物。 一旦元素R H  如果以这种方式脱离主相,则矫顽力将不再足够提高。 因此,优选在粉碎工序和后述的烧结工序中适当地使粉体的氧化最小化。 \n\n [0085] 接下来,通过在对准磁场下使用压粉机将粉末压制成所需的形状。 然后,在惰性气体气氛中于10℃的压力下烧结由此获得的粉末压块。  −4 帕至10 6  通过在这样的气氛中进行烧结处理,在该气氛中将氧浓度控制在预定水平以下,优选将所得的烧结体(或烧结磁体)中的氧浓度控制为0.3质量%以下。 \n\n [0086] 烧结温度优选设定为防止在主要的烧结相中的Dy在长时间的烧结过程中扩散。 更具体地,优选将温度从产生液相的800℃升高到烧结密度达到真实密度的温度的速率设置在5℃/ min至50的范围内。  °C /分钟 然后,通过保持该时间量的温度,可以防止在已粉碎成粉末的凝固合金的主相中具有增加的浓度的Dy再次扩散到富R相中。 \n\n [0087] 通过氢爆破工艺粗粉碎成粉末的快速冷却的合金包括氢。 因此,为了从合金粉末中去除该氢,可以在进行烧结之前将快速冷却的合金在800℃至1000℃(例如900℃)的温度下保持30分钟至6小时。 处理。 如果进行这样的脱氢处理,则在脱氢处理结束后,以升温速度进行加热处理。 \n\n [0088] 如果通过将温度保持在800℃至1000℃的范围内来进行脱氢处理之后为了烧结而升高温度,则优选将升温速率设定在5℃的范围内。  / min至50°C / min。 然后,可以减少由于烧结过程引起的晶粒生长。 结果,还可以最小化通过温度保持处理步骤而增加的矫顽力的降低。 \n\n [0089] 任选地,在烧结过程之后,可以在400℃至900℃的温度下进行再加热过程。 通过进行这样的再加热处理,可以如预期那样控制晶界相,并且可以进一步提高矫顽力。 \n\n 实施例和比较例 \n\n [0090] 首先,合金熔体,其组成包括作为余量的Nd 22质量%,Pr 6.0质量%,Dy 3.5质量%,Co 0.9质量%,B 1.0质量%,Fe 1.0质量%(非常小)。 量的不可避免地包含的杂质)通过单辊铸带法快速冷却,从而制得具有上述组成的凝固合金。 \n\n [0091] 熔体在经受快速冷却过程之前的温度为1350℃,并且辊的表面圆周速度为70m / min。 在第一冷却工艺步骤中,通过使用诸如图2所示的带式连铸机,将固化的合金的温度降低至约700℃至约800℃。  3.接下来,使用鼓容器对合金进行温度保持处理步骤。 6  如图所示。  3在下表1规定的条件下,然后进行第二个冷却过程,使其冷却至室温。 \n\n [0092] \n\n    表格1  样品编号 保温过程  1(示例) 800°C×40秒  2(示例) 700°C×120秒  3(示例) 700°C×240秒  4(比较示例) 不适用 \n\n [0093] 代表比较例的4号样品没有经过温度保持处理步骤,而是单调地连续冷却至室温。 \n\n [0094] 使用电子探针显微分析仪(EPMA)对以此方式获得的这些凝固合金的1-4号样品进行线分析,该电子探针显微分析仪旨在通过用电子束照射物体来检测特征X射线。 结果,本发明人证实,在主相中Dy的浓度高于在晶界相中的Dy,并且在晶界相中的Nd和Pr的浓度高于在主相中的Nd和Pr的浓度。 合金的磁性能也用BH示踪剂测量。 结果示于下表2: \n\n [0095] \n\n    表2  样品编号乙 r  (公斤) H  J (kOe) (BH)  最高 (MGOe)   1(示例) 13.1 20.5 41.0  2(示例) 13.1 20.1 41.0  3(示例) 13.1 20.3 41.0  4(比较 13.1 19.5 41.0  例)  \n\n [0096] 从表2可以看出,样品1至3的矫顽力为H。  J 20.1 kOe到20.5 kOe,而4号样品的矫顽力H  J 19.5 kOe。 这样,本发明人确认了矫顽力H  J 本发明的具体实施例的最大比对比例高最多5%。 \n\n [0097] 在本发明的这些实施例中,如上所述,将细粉碎过程中的氧气浓度控制在适当的范围内。 因此,可以使Dy向晶界的扩散最小化,并且在烧结过程中可以提高矫顽力。 \n\n [0098] 根据本发明,元素R H 为了提高矫顽力而添加的铁水可以通过在冷却熔融合金的同时执行温度保持处理步骤来增加主相中的浓度。 因此,通过有效地使用这种稀有且昂贵的重稀土元素,可以提高矫顽力,而无需单独进行任何特殊的热处理工艺。');
INSERT INTO `os_patent_instruction_text` VALUES (13053, 22882, '【技術分野】\n\n【0001】\n\n本発明は、希土類磁石用原料合金、および、その粉末の製造方法に関し、また、希土類磁石用原料合金粉末を用いて焼結磁石を製造する方法に関している。\n\n【背景技術】\n\n【0002】\n\nネオジム·鉄·硼素系磁石は、種々の磁石の中で最も高い磁気エネルギー積を示し、価\n\n格も比較的安いため、HDD、MRI、およびモータなどの重要部品として各種電子機器へ積極的に採用されている。\n\n【0003】\n\nネオジム·鉄·硼素系磁石は、Nd2Fe14B型結晶を主相とする磁石であるが、より一般的に「R-T-B系磁石」と称される場合がある。ここで、Rは希土類元素、TはFeを主とするNiやCoで代表される遷移金属元素、Bは硼素である。ただし、Bの一部は、C、N、Al、Si、および/またはPなどの元素によって置換され得るため、本明細書では、B、C、N、Al、Si、およびPからなる群から選択された少なくとも1種の元素を「Q」と表記し、「ネオジム·鉄·硼素系磁石」と称されている希土類磁石を広く「R-T-Q系希土類磁石」と記載する。R-T-Q系希土類磁石では、R2T14Q結晶粒が主相を構成している。\n\n【0004】\n\nR-T-Q系希土類磁石用原料合金の粉末は、当該原料合金の粗粉砕を行う第1粉砕工程と、原料合金の微粉砕を行う第2粉砕工程とを含む方法によって作製されることが多い。例えば、第1粉砕工程では水素脆化処理によって原料合金を数百μm以下のサイズに粗く粉砕した後、第2粉砕工程では、粗粉砕された原料合金(粗粉砕粉)をジェットミル粉砕装置などによって平均粒径が数μm程度のサイズに細かく粉砕する。\n\n【0005】\n\n磁石用原料合金自体の作製方法には大きく分けて2種類ある。第1の方法は、所定組成の合金溶湯を鋳型に入れ、比較的ゆっくりと冷却するインゴット鋳造法である。第2の方法は、所定組成の合金溶湯を単ロール、双ロール、回転ディスク、または回転円筒鋳型等に接触させて急速に冷却し、合金溶湯からインゴット合金よりも薄い凝固合金を作製するストリップキャスト法や遠心鋳造法に代表される急冷法である。\n\n【0006】\n\nこのような急冷法による場合、合金溶湯の冷却速度は、例えば101℃/秒以上104℃/秒以下の範囲にある。そして、急冷法によって作製された急冷合金の厚さは、0.03mm以上10mm以下の範囲にある。合金溶湯は冷却ロールの接触した面(ロール接触面)から凝固し、ロール接触面から厚さ方向に結晶が柱状(針状)に成長してゆく。その結果、上記急冷合金は、短軸方向サイズが3μm以上10μm以下で長軸方向サイズが10μm以上300μm以下のR2T14Q結晶相と、R2T14Q結晶相の粒界に分散して存在するRリッチ相(希土類元素Rの濃度が相対的に高い相)とを含有する微細結晶組織を持つにいたる。Rリッチ相は希土類元素Rの濃度が比較的に高い非磁性相であり、その厚さ(粒界の幅に相当する)は10μm以下である。\n\n【0007】\n\n急冷合金は、従来のインゴット鋳造法(鋳型鋳造法)によって作製された合金(インゴット合金)に比較して、相対的に短時間で冷却されているため、組織が微細化され、結晶粒径が小さい。また、結晶粒が微細に分散して粒界の面積が広く、Rリッチ相は粒界内を薄く広がっているため、Rリッチ相の分散性にも優れ、焼結性が向上する。このため、特性の優れたR-T-Q系希土類焼結磁石を製造する場合には、その原料として、急冷合金が使用されるようになってきている。\n\n【0008】\n\n希土類合金(特に急冷合金)に水素ガスをいったん吸蔵させ、いわゆる水素粉砕処理によって粗粉砕を行う場合(本明細書では、このような粉砕方法を「水素脆化処理」と称する)、粒界に位置するRリッチ相が水素と反応し、膨張するため、Rリッチ相の部分(粒界部分)から割れる傾向にある。そのため、希土類合金を水素粉砕することによって得られた粉末の粒子表面にはRリッチ相が現われやすくなる。また、急冷合金の場合は、Rリッチ相が微細化されており、その分散性も高いため、水素粉砕粉の表面にはRリッチ相が特に露出しやすい。\n\n【0009】\n\n上記の水素脆化処理による粉砕方法は、例えば米国特許出願09/503,738に開\n\n示されている。\n\n【0010】\n\nこのようなR-T-Q系希土類磁石の保磁力を高めるため、希土類Rの一部をDy、Tb、および/またはHoで置換する技術が知られている。なお、本明細書では、Dy、Tb、およびHoからなる群から選択された少なくとも1種の元素をRHと表記することする。\n\n【0011】\n\nしかしながら、R-T-Q系希土類磁石用原料合金に添加した元素RHは、合金溶湯の急冷後、主相であるR2T14Q相にだけではなく、粒界相にもほぼ一様に存在することになる。このような粒界相に存在する元素RHは、保磁力の向上に寄与しないという問題がある。\n\n【0012】\n\nまた、粒界に元素RHが多く存在することにより焼結性が低下するとう問題もある。この問題は、原料合金に占める元素RHの割合が1.5原子%以上の場合に大きくなり、この割合が2.0原子%以上になると顕著なものとなる。\n\n【0013】\n\nまた、凝固合金の粒界相部分は、水素脆化処理および微粉砕工程によって超微粉(粒径:1μm以下)となりやすく、かりに微粉末にならなかったとしても、露出した粉末表面を構成しやすい。超微粉は、酸化や発火の問題を引き起こしやすく、また、焼結にも悪影響を与えるため、粉砕工程中に除去される。粒径1μm以上の粉末粒子の表面に露出している希土類は酸化されやすく、また、元素RHはNdやPrよりも酸化されやすいため、合金の粒界相中に存在した元素RHは、安定な酸化物を形成してしまい、主相の希土類元素Rと置換することなく、粒界相に偏析した状態を維持しやすい。\n\n【0014】\n\n以上のことから、急冷合金中の元素RHのうち、その粒界相に存在する部分は保磁力向上のために有効利用されないという問題がある。元素RHは、希少な元素であり、価格も高いため、資源の有効利用や製造コストの低下という観点から、上述のような無駄を排除することが強く求められている。\n\n【0015】\n\nこのような問題を解決するため、特許文献1は、ストリップキャスト法で作製した急冷凝固合金に対して、400〜800℃の温度範囲で5分〜12時間保持する熱処理工程を施すことにより、粒界に存在する重希土類を主相に濃縮することを開示している。\n\n【0016】\n\nなお、このようにDyを主相に濃縮することを目的とはしていないが、急冷合金の組織を調整する目的で、合金溶湯の急冷プロセスを制御することが特許文献2や特許文献3に開示されている。\n\n【0017】\n\n特許文献2は、急冷合金の組織を微細化するため、合金溶湯を急冷する過程を一次冷却と二次冷却の2つの段階に区分し、各段階における冷却速度を特定範囲に制御することを開示している。\n\n【0018】\n\n特許文献3は、冷却ロールによって合金溶湯を急冷することによって薄帯状の急冷凝固合金を作製した直後に、その急冷凝固合金を収容容器内に収め、急冷凝固合金の温度を制御することを開示している。特許文献3の開示する方法では、急冷途中において合金温度が900℃から600℃に低下するときの平均冷却速度を10〜300℃/分に制御することにより、Rリッチ相の分布を調節している。\n\n【特許文献1】特願2003-507836号\n\n【特許文献2】特開平8-269643号公報\n\n【特許文献3】特開2002-266006号公報\n\n【発明の開示】\n\n【発明が解決しようとする課題】\n\n【0019】\n\nしかし、上記の従来技術には、以下に説明する問題がある。\n\n【0020】\n\n特許文献1の方法では、急冷合金を一旦元素の拡散が生じない温度(例えば室温)まで冷却した後に、急冷装置とは別の炉で急冷合金を加熱することにより、前述した400〜800℃の熱処理行っている。このように急冷工程が完了した後に熱処理を行なうには、熱処理温度まで急冷合金を加熱するプロセスが必要になり、製造作業が煩雑となるだけでなく、結晶粒が粗大化して保磁力が低下するという不都合がある。\n\n【0021】\n\n特許文献2や特許文献3に開示されている方法では、急冷合金の組織を微細化したり、Rリッチ相を分散化することは達成できても、Dyなどの特定希土類元素を粒界から主相に拡散させることはできない。\n\n【0022】\n\n本発明はかかる諸点に鑑みてなされたものであり、その主な目的は、製造工程を煩雑化することなく、Dy、Tb、およびHoを主相に濃縮して保磁力を効果的に向上させることのできるR-Fe-Q系希土類磁石の製造方法を提供することにある。\n\n【課題を解決するための手段】\n\n【0023】\n\n本発明によるR-T-Q系希土類磁石用原料合金の製造方法は、R-T-Q系希土類合金(Rは希土類元素、Tは遷移金属元素、QはB、C、N、Al、Si、およびPからなる群から選択された少なくとも1種の元素)であって、希土類元素Rとして、Nd、Pr、Y、La、Ce、Pr、Sm、Eu、Gd、Er、Tm、Yb、およびLuからなる群から選択された少なくとも1種の元素RLと、Dy、Tb、およびHoからなる群から選択された少なくとも1種の元素RHとを含有する合金の溶湯を用意する工程と、前記合金の溶湯を700℃以上1000℃以下の温度まで急冷することによって凝固合金を形成する第1冷却工程と、前記凝固合金を、700℃以上900℃以下の温度範囲に含まれる温度で15秒以上600秒以下のあいだ保持する温度保持工程と、前記凝固合金を400℃以下の温度まで冷却する第2冷却工程とを包含する。\n\n【0024】\n\n好ましい実施形態において、前記温度保持工程は、前記凝固合金の温度を前記温度範囲に含まれる前記温度に保持する際、前記凝固合金の温度を10℃/分以下の冷却速度で低下させる工程および/または前記凝固合金の温度を1℃/分以下の昇温速度で上昇させる工程を含む。\n\n【0025】\n\n好ましい実施形態において、前記第1冷却工程は、前記合金の溶湯の温度を102℃/秒以上104℃/秒以下の冷却速度で低下させる工程を含む。\n\n【0026】\n\n好ましい実施形態において、前記第2冷却工程は、前記凝固合金の温度を10℃/秒以上の冷却速度で低下させる工程を含む。\n\n【0027】\n\n好ましい実施形態において、前記元素RHは、含有希土類元素全体の5原子%以上を占める。\n\n【0028】\n\n好ましい実施形態において、前記第2冷却工程直後における前記凝固合金中のR2T14Q相に含まれる元素RHの原子数比率が希土類元素全体に占める元素RHの原子数比率よりも大きい。\n\n【0029】\n\n好ましい実施形態において、前記第2冷却工程直後における前記凝固合金中のR2T14Q相に含まれる元素RHの原子数比率は、含有希土類元素全体に占める元素RHの原子\n\n数比率の1.1倍よりも大きい。\n\n【0030】\n\n好ましい実施形態において、希土類元素Rは全体の11原子%以上17原子%以下、遷移金属元素Tは全体の75原子%以上84原子%以下、元素Qは全体の5原子%以上8原子%以下である。\n\n【0031】\n\n好ましい実施形態において、前記合金は、Ti、V、Cr、Mn、Ni、Cu、Zn、Ga、Zr、Nb、Mo、In、Sn、Hf、Ta、W、およびPbからなる群から選択された少なくとも1種の添加元素Mを含有する。\n\n【0032】\n\n好ましい実施形態において、前記第1冷却工程は、回転する冷却ロールによって前記合金の溶湯を冷却する工程を含む。\n\n【0033】\n\n好ましい実施形態において、前記温度保持工程は、700℃以上900℃以下の温度に加熱された部材で前記急冷凝固合金に熱を供給する工程を含む。\n\n【0034】\n\n本発明によるR-T-Q系希土類磁石用原料合金粉末の製造方法は、上記いずれかの製造方法によって製造されたR-T-Q系希土類磁石用原料合金を水素脆化法によって脆化させる工程と、前記脆化されたR-T-Q系希土類磁石用原料合金を粉砕する工程とを包含する。\n\n【0035】\n\n好ましい実施形態において、前記R-T-Q系希土類磁石を粉砕する工程では、不活性ガスの高速気流を用いて前記R-T-Q系希土類磁石の微粉砕を実行する。\n\n【0036】\n\n本発明による焼結磁石の製造方法は、上記いずれかの製造方法によって製造されたR-T-Q系希土類磁石用原料合金粉末を用意し、前記粉末の成形体を作製する工程と、前記成形体を焼結する工程とを包含する。\n\n【0037】\n\n好ましい実施形態において、前記成形体を焼結する工程は、脱水素工程のあと、液相が形成される温度(800℃)から焼結密度が真密度に達する温度までの加熱を行うとき、昇温速度を5℃/mim以上に設定する。\n\n【0038】\n\n本発明のR-T-B系希土類磁石用原料合金は、上記の製造方法によって製造されたR-T-B系希土類磁石用原料合金であって、主相とRリッチ相とを含有し、前記Rリッチ相のうち前記主相と前記Rリッチ相との界面に接する部分における元素RHの濃度は、前記主相のうち前記界面に接する部分における元素RHの濃度よりも低下しており、前記主相を構成する結晶粒の短軸方向サイズが3μm以上10μm以下の範囲である。\n\n【発明の効果】\n\n【0039】\n\n本発明によれば、合金溶湯を冷却して凝固合金を作製する過程において、冷却途中の凝固合金を700℃以上900℃以下の温度範囲に保持する工程を行なうことにより、Dyなどの重希土類を粒界から主相へ拡散させることができる。本発明では、冷却工程が完了した後、室温レベルに低下した凝固合金を加熱して熱処理を行なう必要が無いため、粒成長が生じにくく、微細な組織を有する合金を得ることができ、Dyなどの重希土類元素による保磁力増大の効果を充分に発揮させることができる。\n\n【図面の簡単な説明】\n\n【0040】\n\n[図1]急冷工程中における合金の温度と経過時間との関係を模式的に示すグラフである。\n\n[図2]本発明の或る実施形態の急冷工程中における合金の温度と経過時間との関係を模\n\n式的に示すグラフである。\n\n[図3]本発明の実施に好適に使用可能な装置の構成を示す装置である。\n\n[図4]凝固合金の組織構造を模式的に示す図である。\n\n【符号の説明】\n\n【0041】\n\n1  坩堝\n\n2  タンデッシュ\n\n4  冷却ロール\n\n5  凝固合金\n\n6  ドラム状容器(温度保持手段)\n\n7  モータ\n\n【発明を実施するための最良の形態】\n\n【0042】\n\n本発明では、まず、R-T-Q系希土類合金(Rは希土類元素、Tは遷移金属元素、QはB、C、N、Al、Si、およびPからなる群から選択された少なくとも1種の元素)の溶湯を用意する。このR-T-Q系希土類合金は、希土類元素Rとして、Nd、Pr、Y、La、Ce、Pr、Sm、Eu、Gd、Er、Tm、Yb、およびLuからなる群から選択された少なくとも1種の元素RLと、Dy、Tb、およびHoからなる群から選択された少なくとも1種の元素RHとを含有している。\n\n【0043】\n\n次に、上記組成の合金溶湯を急冷して凝固合金を作製するが、本発明者は、このような合金溶湯を急冷して凝固合金を作製する過程において、以下に詳細を説明する「温度保持工程」を実行することにより、凝固合金の粒界相中に位置する元素RHを主相へ移動させ、主相に濃縮できることを見出し、本発明を想到するに到った。\n\n【0044】\n\n以下、図1を参照しながら、本発明で実施する温度保持工程を説明する。\n\n【0045】\n\n図1は、急冷工程中における合金の温度と経過時間との関係を模式的に示すグラフである。グラフの縦軸は合金温度であり、横軸は急冷開始からの経過時間である。\n\n【0046】\n\n図1に示す例では、時刻t0から時刻t1までの期間、合金溶湯の第1冷却工程S1を行い、時刻t1から時刻t2までの期間、温度保持工程S2を行なう。その後、時刻t2から時刻t3まで第2冷却工程S3を実行する。\n\n【0047】\n\nまず、合金溶湯を回転する冷却ロールの外周面に接触させ、薄帯状の凝固合金を作製する通常のストリップキャスト法を用いて凝固合金を作製する場合を考える。この場合、合金溶湯は時刻t0で冷却ロールの表面に接触し、冷却ロールによる抜熱が開始される。その後、合金溶湯は、回転する冷却ロール上を移動しながら更に急冷され、時刻t1において凝固した状態で冷却ロールの表面から離れることになる。冷却ロールから離れた合金の温度は、通常800〜1000℃程度の範囲にある。従来のストリップキャスト法による場合、冷却ロールを離れた凝固合金の温度は、空冷などの二次冷却により低下し、やがて常温(例えば室温)に達する。図1のグラフでは、破線で示す温度変化が、通常のストリップキャスト法による冷却を行なった場合に得られる時刻t1以降の温度変化を示している。\n\n【0048】\n\nこのような従来の冷却工程に対して、本発明では、時刻t1から時刻t2までの間において、温度保持工程を行なう点に特徴を有している。図1のグラフでは、本発明による合金温度の変化を実線で示している。図1からわかるように、温度保持工程S2が終了する時刻t2以降に行なう第2冷却工程S3では、従来例の破線で示す温度変化と同様に、自然な冷却により、例えば室温程度まで温度を低下させている。\n\n【0049】\n\n本発明で行なう温度保持工程S2は、合金を700℃以上900℃以下の温度範囲に含まれる所定温度で15秒以上600秒以下の間、保持する。温度保持工程S2を開始する時点において、急冷合金中の粒界には、Dy、Tb、およびHoなどの元素RHは粒界または主相中に略均等に分布していると考えられる。しかし、温度保持工程S2を行なう間に、粒界に存在していたDyなどの元素RHが主相に拡散する一方、主相からは元素RLが粒界に拡散する現象が生じる。700℃以上900℃以下の保持温度においては、凝固合金中の主相は略完全に固体化しているが、粒界は希土類成分が多く融点が低いため、少なくとも一部は液相化している。粒界の一部が液相化した状態にあるとき、粒界からDyなどの元素RHが主相へ活発に拡散すると考えられる。\n\n【0050】\n\n図4は、凝固合金の組織構造を模式的に示す図である。主相はR2T14Q相から構成され、粒界は希土類元素Rが高濃度に含まれるRリッチ相から構成されている。本発明によれば、図1の実線で示す温度プロファイルに従うように合金を冷却するため、図4に示す粒界にはNdなどの元素RLが相対的に多くなる代わりに、Dyなどの元素RHが主相に濃縮した組織構造が得られ、その結果、保磁力を向上させることが可能になる。\n\n【0051】\n\n本発明の温度保持工程S2を行うことにより、図4に示すようにR-T-B系希土類磁石用原料合金の結晶相が粗大化せず、Rリッチ相から主相にDyが拡散される。こうして、主相外郭部にDyが濃縮された層が形成される。このように、温度保持工程S2を行なうことにより、急冷工程によって作製されるR-T-B系希土類磁石用原料合金における主相結晶粒の粒度分布が急峻(シャープ)なものに維持したまま、Dy濃縮層による保磁力向上効果を得ることができる。\n\n【0052】\n\nなお、Dyが濃縮された層は、主相外郭部の全面に形成される必要は無く、外殻部の一部に形成されていてもよい。Dyが濃縮された層が主相外殻部の一部に形成された場合でも、保磁力向上効果が得られる。\n\n【0053】\n\nこのようにして得られた凝固合金は、その後、粉砕処理を受けて粉末化される。粉砕工程の前に水素脆化処理を行う場合、粉末表面に粒界相部分が露出しやすいため、粉砕工程を不活性ガス中で行い、しかも、不活性ガス中の酸素濃度を1体積%以下に調節することが好ましい。雰囲気ガス中の酸素濃度が1体積%を超えて高くなりすぎると、微粉砕工程中に粉末粒子が酸化され、希土類元素の一部が酸化物の生成に消費されてしまう。希土類磁石用原料合金粉末中において磁性に寄与しない希土類酸化物が多く生成されると、主相であるR2T14Q系結晶相の存在比率が低下するため、磁石特性が劣化することになる。また、粒界で元素RHの酸化物が生成されやすくなり、主相中の元素RHの濃度が低下する。このような微粉砕は、ジェットミル、アトライタ、ボールミルなどの粉砕装置を用いて行うことができる。なお、ジェットミルによる粉砕は、米国出願09/851,423に開示されている。\n\n【0054】\n\n以下、本発明の好ましい実施形態をより詳細に説明する。\n\n【0055】\n\nまず、R-T-Q系希土類合金の溶湯を用意する。希土類元素Rとして、Nd、Pr、Y、La、Ce、Pr、Sm、Eu、Gd、Er、Tm、Yb、およびLuからなる群から選択された少なくとも1種の元素RLと、Dy、Tb、およびHoからなる群から選択された少なくとも1種の元素RHとを含有している。ここで、充分な保磁力向上効果を得るため、希土類元素全体の中に占める元素RHの原子数比率(モル比)を5%以上に設定する。好ましい実施形態において、希土類元素Rの含有量は、合金全体の11原子%以上17原子%以下であり、保磁力向上に寄与する元素RHは、希土類元素R全体の10原子%以上を占める。\n\n【0056】\n\n遷移金属元素Tは、Feを主成分(T全体の50原子%以上)とし、その残部はCoおよび/またはNiなどの遷移金属元素を含んでいてもよい。遷移金属元素Tの含有量は、合金全体の75原子%以上84原子%以下である。\n\n【0057】\n\n元素Qは、Bを主成分として含み、正方晶のNd2Fe14B結晶構造中のB(硼素)と置換し得る元素であるC、N、Al、Si、およびPからなる群から選択された少なくとも1種を含んでいても良い。元素Qの含有量は、合金全体の5原子%以上8原子%以下である。\n\n【0058】\n\n合金には、上記主要元素のほかに、Ti、V、Cr、Mn、Ni、Cu、Zn、Ga、Zr、Nb、Mo、In、Sn、Hf、Ta、W、およびPbからなる群から選択された少なくとも1種の添加元素Mが添加されていてもよい。\n\n【0059】\n\n上記組成の原料合金の溶湯を、ストリップキャスト装置の冷却ロールの表面と接触させることにより、急冷凝固させる。本実施形態のストリップキャスト装置としては、例えば図3に示す構成を有する装置を用いることができる。\n\n【0060】\n\n図3の装置は、傾動可能に指示され、合金溶湯を貯えることができる坩堝1と、坩堝1から供給される合金溶湯を受けるタンデッシュ2と、タンデッシュ2内の合金溶湯を引き上げなげながら急冷する冷却ロール4とを備えている。\n\n【0061】\n\nこの装置は、回転する冷却ロール4の表面から離れた凝固合金5の薄帯に対して温度保持工程を行なうためのドラム状容器6と、このドラム状容器6を回転駆動するモータ7とを備えている。ドラム状容器6の少なくとも内壁部分における温度は、不図示のヒータなどにより、700℃以上900℃以下の範囲に保たれている。このヒータの出力を調節することにより、凝固合金5の保持温度を変化させることが可能である。温度保持工程においてモータ7を回動させると、凝固合金5の薄帯は例えば長さ数cm程度の鋳片に割れるが、ドラム状容器6の中で攪拌されるため、多数の鋳片は略均等な温度保持処理を受けることになる。温度保持工程が終了した後、ドラム状容器6から凝固合金5の鋳片を取り出し、その後の自然放冷により、更に温度を低下させる。ドラム状容器6から取り出した後の凝固合金5に対しては、できる限り速いレートで冷却することが好ましいため、冷却用のガス(例えば窒素)を吹き付けてもよい。\n\n【0062】\n\n図3に示す装置を用いて本発明を実施する場合、第1冷却工程は、合金溶湯が冷却ロール5の表面と接触した時に開始し、冷却ロール5の表面から離れるまで継続する。第1冷却工程の期間は例えば0.1秒〜10秒程度である。第1冷却工程における冷却速度は、冷却ロールの回転速度(表面周速度)を適切な範囲(例えば1m/秒以上3m/秒以下)に調節することにより、冷却速度は102℃/秒以上104℃/秒以下の範囲に調節する。第1冷却工程で凝固合金の温度を低下しすぎると、その後の温度保持工程を行なうために必要な温度に上昇させるための余分な加熱処理が必要になるので好ましくない。このため、第1冷却工程では、合金温度を700℃以上1000℃以下の範囲までに低下させることが望ましい。\n\n【0063】\n\n第1冷却工程の後に行なう温度保持工程は、凝固合金5がドラム状容器6の内部に収容されているときに行なわれる。図1に示す例では、時刻t1で第1冷却工程が完了した後、直ちに温度保持工程が開始されているが、図3に示すような装置を用いる場合は、凝固合金5が冷却ロール5から離れてからドラム状容器6の中に移動するまでにかかる時間だけ、温度保持工程の開始時期が遅れる。このように温度保持工程の開始が遅れると、その間に凝固合金5の温度が低下することになるが、その温度が700℃を下回らなければ、\n\n問題はない。例えば保持温度を800℃に設定している場合において、温度保持工程開始直前における凝固合金5の温度が750℃に低下していることが起こり得る。このような場合、温度保持工程の少なくとも初期においては、凝固合金5はドラム状容器6に加熱され、750℃から800℃に昇温する。このような昇温が生じたとしても、その間に、Dyなどの元素RHは粒界から主相に拡散するため、保磁力増大の効果を得ることができる。また、温度保持工程は600秒以下の短い期間であるため、結晶粒の粗大化は問題にならない。\n\n【0064】\n\nこのように、本発明における「温度保持工程」とは、凝固合金の温度を厳密に一定レベルに保持する場合のみを意味するのではなく、冷却工程の途中における一定期間、冷却速度を自然放冷の場合よりも意図的に低下させることにより、700℃以上900℃以下の温度範囲を通過する時間を長くすることを広く意味するものとする。\n\n【0065】\n\n一般に、ストリップキャスト法などにより凝固合金を作製する場合、冷却ロールから離れた凝固合金は、大気雰囲気や搬送部材との接触によって抜熱される。このため、本発明における温度保持工程を行なうには、このような自然な冷却(抜熱)に反して熱を凝固合金に供給することが必要になる。この意味で、本発明の「温度保持工程」は、冷却途中に行なう一種の熱処理工程として機能する。\n\n【0066】\n\nまた、凝固合金の温度を一定に保持しようとしても、現実には多少の温度変化が不可避である。例えば、10℃/分以下の冷却速度で生じる緩やかな冷却や、1℃/分以下の昇温速度で生じる極めて緩やかな昇温が生じていても、通常の冷却工程に比べれば略一定の温度に保持されていると認められる。図2は、温度保持工程S2で、合金温度が緩やかに低下している例(実線)や、温度が増減している例(破線)を模式的に示している。このような場合でも、Dyなどの元素RHを粒界から主相に拡散し、保磁力を増大させることが可能である。\n\n【0067】\n\n温度保持工程が長くなりすぎると、粒成長が生じ、保磁力が低下するおそれがあるため、温度保持の時間は15秒以上600秒以下に設定することが好ましい。\n\n【0068】\n\nこのような温度保持工程により、Dy、Tb、およびHoからなる群から選択された少なくとも1種の元素RHは、主相に濃縮される。保持温度は、前述したように700℃以上900℃以下の範囲から任意に設定され得るが、700℃〜800℃程度の温度に設定することが好ましい。\n\n【0069】\n\n温度保持工程後に行う第2冷却工程では、常温(室温程度)まで10℃/秒以上の冷却速度で凝固合金を冷却することが好ましい、比較的大きな冷却速度で合金を冷却することにより、結晶粒の成長を充分に抑制することができる。第2冷却工程は、雰囲気ガスとの接触による自然な冷却で足りる場合もあるが、凝固合金に冷却ガスを吹き付けたり、冷却部材を接触させたりすることにより、積極的な冷却処理を行なっても良い。\n\n【0070】\n\nこれら一連の工程は、真空または不活性ガス雰囲気中て行なうことが好ましい。図3に示す装置では、第1冷却工程、温度保持工程、および第2冷却工程を大気から仕切られたチャンバー内で実行しているが、第2冷却工程の後半では凝固合金5の温度は相当に低いレベルに低下しているため、大気に接しても酸化などによる品質劣化の問題は少ない。このため、第2冷却工程の一部または全部は、チャンバーの外部で行なっても良い。\n\n【0071】\n\nなお、温度保持工程は、図3に示すような装置によって行なう場合に限定されず、他の方法で行なっても良い。例えば、ストリップキャスト装置の冷却ロールから離れた急冷合金を搬送しながら温度保持工程を行なうようにしても良い。この場合、搬送路上にヒータ\n\nによる加熱部を配置し、冷却ロールから離れて搬送されてくる凝固合金の自然放熱を抑制すればよい。\n\n【0072】\n\nこのようにして作製された急冷合金(ストリップキャスト合金)中には、主相としてR2T14Q相(Rは希土類元素、Tは遷移金属元素、QはB、C、N、Al、Si、およびPからなる群から選択された少なくとも1種の元素)が形成されている。R2T14Q相(主相結晶粒)は、短軸方向サイズ(平均大きさ)が3μm以上10μm以下であり、長軸方向サイズが10μm以上300μm以下の針状結晶(デンドライト)である。\n\n【0073】\n\n第2冷却工程が終了した時点における(as-spun)凝固合金では、主相であるR2T14Q相における元素RHの濃度がR2T14Q相以外の相(粒界相など)における元素RHの濃度よりも高く、主相への元素RHの濃縮が実現している。\n\n【0074】\n\nこれは、温度保持工程を行なうことにより、第1冷却工程終了段階において粒界相部分に存在した元素RHが、主相であるR2T14Q相に移動し、R2T14Q相中に濃縮されたことを意味している。こうして、最終的にR2T14Q相における元素RHの濃度は、R2T14Q相以外の相における元素RHの濃度よりも高い凝固合金が得られる。急冷合金中におけるデンドライトの間隔は、温度保持工程の前後で殆んど変化しない。このため、R2T14Q相の短軸方向サイズは、3μm以上10μm以下の範囲のまま、殆んど変化せず、たとえデンドライド結晶が成長したとしても、その成長量は短軸方向にせいぜい1〜2μm程度である。\n\n【0075】\n\n本発明では、一旦、室温程度まで冷却した急冷合金を再び加熱することによってDyを拡散させる方法を用いていないため、そのような加熱による結晶粒の粗大化を抑制することができ、Dyなどの希土類元素による保磁力増大効果を効果的に高めることが可能になる。\n\n【0076】\n\n次に、上記の方法によって凝固合金を水素脆化法によって脆化させた後、ジェットミル装置などの粉砕機を用いて粉砕し、微粉末化する。得られた乾式粉末の平均粒径(F.S.S.S.粒径)は、例えば3.0〜4.0μmである。ジェットミル装置では、所定量の酸素が導入された不活性ガスの高速気流を用いて原料合金を粉砕する。不活性ガス中の酸素濃度は1体積%以下に調節することが好ましい。より好ましい酸素濃度は0.1体積%以下である。\n\n【0077】\n\n本発明において、このように粉砕時の雰囲気中酸素濃度を制限する理由は、粒界相から主相へ移動させた元素RHが酸化によって再び粒界相部分に移動·析出しないようにするためである。粉末中に酸素が多く含まれると、Dy、Tb、Hoなどの重希土類元素RHは、酸素と結合してより安定な酸化物を生成する傾向がある。本発明で用いる合金組織では、酸素は主相中よりも粒界相に多く分布するため、主相中の元素RHは再び粒界相へ拡散し、そこで酸化物生成に消費されるものと考えられる。このようにして主相中から元素RHが流出すると、保磁力の十分な向上を実現できないため、粉砕工程および次に説明する焼結工程では、粉末の酸化を適切に抑制することが望ましい。\n\n【0078】\n\n次に、粉体プレス装置を用い、上記粉末を配向磁界中で圧縮し、所望の形状に成形する。こうして得られた粉末成形体を例えば10-4Pa以上106Pa以下の不活性ガス雰囲気下で焼結する。このように酸素濃度を所定レベル以下に制限した雰囲気中にて焼結工程を実行することにより、焼結体(焼結磁石)に含まれる酸素の濃度を0.3質量%以下にすることが望ましい。\n\n【0079】\n\n焼結温度は、主相に濃縮されたDyが長時間の焼結工程時に拡散しないように設定する\n\nことが好ましい。具体的には、液相が形成される温度(800℃)から、焼結密度が真密度に達する温度までの昇温速度を5℃/mim以上50℃/mim以下の範囲に設定することが好ましい。焼結工程における昇温速度を5℃/mim以上50℃/mim以下の範囲にすると、粉末となった凝固合金の主相に濃縮されたDyが等温保持によって再びRリッチ相に拡散することを抑制することができる。\n\n【0080】\n\n水素脆化処理を施すことにより粗粉砕された急冷合金の粉末には、水素が含有されているが、そのような水素を合金粉末から除去するため、焼結前に急冷合金を800℃以上1000℃以下の温度(例えば900℃)で30分から6時間分程度保持しても良い。このような脱水素工程を行なう場合、上記昇温速度での加熱は、脱水素工程の後に行うことになる。\n\n【0081】\n\n800℃以上1000℃以下の温度範囲に保持する脱水素工程の後、焼結のための昇温を行なうとき、昇温速度を5℃/mim以上50℃/mim以下の範囲にすると、焼結にともなう粒成長が抑えられるため、等温保持によって向上した保磁力の低下を抑制することもできる。\n\n【0082】\n\nなお、焼結後、400℃〜900℃の温度範囲で再加熱処理を行ってもよい。このような再加熱処理を行なうことにより、粒界相を制御し、保磁力を更に高めることができる。\n\n【0083】\n\n[実施例および比較例]\n\nまず、質量比率で22%Nd-6.0%Pr-3.5%Dy-0.9%Co-1.0%B-残部Fe(その他に不可避的に混入する微量の不純物)の組成を有する合金の溶湯を、単ロールのストリップキャスト法で急冷することにより、上記組成の凝固合金を作製した。\n\n【0084】\n\n急冷を開始する直前における溶湯の温度は1350℃であり、ロール表面の周速度は70m/分に設定した。第1冷却工程では、図3に示すようなストリップキャスト装置により、凝固合金の温度700〜800℃程度に低下させた。そして、図3のドラム状容器6により、以下の表1に示す条件で温度保持工程を行なった後、室温まで冷却する第2冷却工程を行なった。\n\n【0085】\n\n\n\n【0086】\n\nなお、サンプルNo.4の比較例では、温度保持工程を行なうことなく、室温まで単調かつ連続的な冷却工程を継続した。\n\n【0087】\n\nこうして作製されたサンプルNo.1〜4の凝固合金について、電子線を照射して特性X線を検出するEPMA(Electron  Probe  Micro  Analyzer)によるライン分析を行なったところ、Dyの濃度は粒界相よりも主相において相対的に高く、また、NdおよびPrの濃度は主相よりも粒界相において相対的に高いことを確認した。また、BHトレーサにより磁気特性を測定したところ、以下の表2に示す結果が得られた。\n\n【0088】\n\n\n\n【0089】\n\n表2からわかるように、サンプルNo.1〜3の保磁力HcJは20.1〜20.5kOeであるのに対して、サンプルNo.4の保磁力HcJは19.5kOeである。このように、保持力HcJについては、実施例の値が比較例の値に比べて最大で5%も高いことが確認できた。\n\n【0090】\n\nなお、本実施例では、前述のように、微粉砕工程時における酸素濃度を適切な範囲に調節しているため、焼結工程におけるDyの粒界への拡散を抑制するとともに、保磁力の向上を達成することができた。\n\n【産業上の利用可能性】\n\n【0091】\n\n本発明によれば、保磁力向上目的で添加したDyなど元素RHを、合金溶湯の冷却過程の途中に実行する温度保持工程により、主相中に濃縮することができる。このため、特別な熱処理工程を別途行なうことなく、希少な重希土類元素を有効に活用して保磁力を向上させることが可能になる。', '[技术领域]\n\n  [0001]\n\n 稀土磁体用原料合金及其粉末的制造方法技术领域本发明涉及稀土磁体用原料合金及其粉末的制造方法，还涉及使用稀土类磁体的原料合金粉末的烧结磁体的制造方法。\n\n [背景技术]\n\n   [0002]\n\n 钕/铁/硼磁体在各种磁体中具有最高的磁能积，并且其价格相对较低，因此它们被积极用作各种电子设备中的重要部件，例如HDD，MRI和电动机。 是\n\n   [0003]\n\n 钕铁硼基磁体是其主要相为Nd2Fe14B型晶体的磁体，但是通常可以称为“ R-T-B基磁体”。 在此，R为稀土元素，T为以Ni或Co为代表的过渡金属元素，主要为Fe，B为硼。 但是，由于B的一部分可以被B，C，N，Al，Si和P组成的组中的C，N，Al，Si和/或P等元素所取代。 至少一个选择的元素被称为“ Q”，而被称为“钕/铁/硼基磁体”的稀土磁体被广泛地称为“ RTQ稀土磁体”。 在R-T-Q稀土磁体中，R2T14Q晶粒形成主相。\n\n   [0004]\n\n R-T-Q基稀土磁体原料合金的粉末通常通过包括将原料合金粗粉碎的第一粉碎步骤和将原料合金细粉碎的第二粉碎步骤的方法来制造。 例如，在第一粉碎步骤中，在通过氢脆处理将原料合金粗粉碎至几百μm以下的尺寸之后，在第二粉碎步骤中，将粗粉碎的原料合金（粗粉碎粉）进行气流粉碎机粉碎。 将这些颗粒细粉碎以具有约几μm的平均粒度。\n\n   [0005]\n\n 磁铁原料合金本身的制造方法大致有两种。 第一种方法是铸锭法，其中将具有预定组成的熔融合金放入模具中并相对缓慢地冷却。 第二种方法是通过使具有预定组成的熔融合金与单辊，双辊，旋转盘或旋转圆筒模具接触而快速冷却来从熔融合金生产比铸锭合金更薄的凝固合金的带钢铸造。 以该方法和离心铸造法为代表的淬火方法。\n\n   [0006]\n\n 在这种淬火方法的情况下，熔融合金的冷却速度例如在101℃/秒以上且104℃/秒以下的范围内。 通过淬火方法制造的淬火合金的厚度在0.03mm以上且10mm以下的范围内。 熔融合金从冷却辊的接触表面（辊接触表面）凝固，并且晶体从辊接触​​表面沿厚度方向以柱状（针状）生长。 结果，淬火合金具有3μm以上且10μm以下的短轴尺寸和10μm以上且300μm以下的长轴尺寸R2T14Q结晶相，以及R2T14Q。 它具有包含分散存在于晶相的晶界中的富含R的相（稀土元素R的浓度相对较高的相）的精细晶体结构。 富R相是非磁性相，其中稀土元素R的浓度相对较高，并且其厚度（对应于晶界的宽度）为10μm或更小。\n\n   [0007]\n\n 与通过常规的铸锭法（模铸法）生产的合金（锭合金）相比，淬火合金在相对短的时间内冷却，从而使组织细化并且晶粒尺寸减小。 小号 此外，由于晶粒细分散并且晶界的区域宽，并且富R相在晶界内较薄地散布，因此富R相的分散性优异并且烧结性提高。 因此，在生产具有优异特性的R-T-Q基稀土烧结磁体的情况下，已将淬火合金用作其原料。\n\n   [0008]\n\n 当氢气一旦被存储在稀土合金（特别是淬火合金）中并且通过所谓的氢粉碎处理（在此，这种粉碎方法被称为“氢脆化处理”）进行粗粉碎时，形成晶界。 所定位的富R相与氢反应并膨胀，从而富R相趋于从富R相部分（晶界部分）破裂。 因此，在通过氢粉碎稀土合金而得到的粉末的粒子表面上，容易出现富R相。 此外，在淬火合金的情况下，富R相被细碎并且具有高分散性，使得富R相特别可能暴露在氢粉碎粉末的表面上。\n\n   [0009]\n\n 上述通过氢脆处理的粉碎方法公开在例如美国专利申请09 / 503,738中。\n\n   [0010]\n\n 为了增加这种基于R-T-Q的稀土磁体的矫顽力，已知一种技术，其中一部分稀土R被Dy，Tb和/或Ho替代。 在本说明书中，从由Dy，Tb和Ho组成的组中选择的至少一种元素由R ^ h表示。\n\n   [0011]\n\n 但是，添加到RTQ系稀土磁体原料合金中的元素R ^ h几乎不仅在主相R2T14Q相中，而且在淬火熔融合金后也处于晶界相中。 它会统一存在。 在这样的晶界相中存在的元素R ^ h不会有助于矫顽力的提高。\n\n   [0012]\n\n 另外，由于晶界中大量的元素R ^ h，存在烧结性降低的问题。 当原料合金中的元素R ^ h的比率为1.5原子％以上时，该问题变大，而当比率为2.0原子％以上时，该问题变得显着。\n\n   [0013]\n\n 此外，由于氢脆化处理和细粉碎处理，凝固合金的晶界相部分可能成为超细粉末（粒径：1μm或更小），即使它没有变成细粉末，也易于形成暴露的粉末表面。  。 超细粉末容易引起氧化和着火的问题，并且对烧结具有不利影响，因此在研磨过程中将其除去。 暴露在粒径为1μm或更大的粉末颗粒表面上的稀土元素容易被氧化，与Nd和Pr相比，元素R ^ h更容易被氧化，因此元素R（存在于合金的晶界相中）为  ^ h）形成稳定的氧化物，并且在不替代主相的稀土元素R的情况下，容易在晶界相中保持偏析状态。\n\n   [0014]\n\n 由上可知，存在淬火合金中的元素R ^ h中存在于晶界相中的部分不能有效地用于提高矫顽力的问题。 由于元素R ^ h是稀有元素并且具有高价格，因此从有效利用资源和降低制造成本的观点出发，强烈要求消除上述浪费。\n\n   [0015]\n\n 为了解决该问题，专利文献1公开了对通过薄带连铸法制造的快速凝固的合金进行将其在400至800℃的温度范围内保持5分钟至12小时的热处理步骤，从而形成晶粒的方法。 据披露，世界上存在的重稀土集中在主相中。\n\n   [0016]\n\n 尽管不希望以此方式将Dy集中在主相中，但是为了调节淬火合金的结构，在专利文献2和专利文献3中可以控制熔融合金的淬火过程。 公开了。\n\n   [0017]\n\n 专利文献2公开了为了使淬火合金的组织微细化，将熔融合金的淬火处理分为一次冷却和二次冷却两个阶段，将每个阶段的冷却速度控制在特定范围内。 我在做\n\n   [0018]\n\n 专利文献3公开了一种利用冷却辊将熔融合金淬火而制造带状的快速凝固合金之后，将其迅速地放置在容器中，并控制该快速凝固合金的温度的方法。 是 在专利文献3中公开的方法中，通过控制在快速冷却至10至300℃/ min期间合金温度从900℃降至600℃时的平均冷却速率，来调节富R相的分布。 有。\n\n [专利文献1]日本专利申请第2003-507836号\n\n [专利文献2] JP-A-8-269643\n\n [专利文献3]日本特开2002-266006号公报\n\n 发明内容\n\n [本发明要解决的问题]\n\n   [0019]\n\n 然而，上述常规技术具有以下问题。\n\n   [0020]\n\n 在专利文献1的方法中，将淬火合金一旦冷却至不发生元素扩散的温度（例如，室温），则通过在与淬火装置不同的炉中加热淬火合金，将上述温度设为400〜800℃。 完成热处理。 为了以这种方式在淬火过程完成之后进行热处理，需要将淬火的合金加热至热处理温度的过程，这不仅使制造工作复杂而且使晶粒粗大并且降低了矫顽力。 不便之处。\n\n   [0021]\n\n 在专利文献2或专利文献3所公开的方法中，即使可以使淬火合金的组织微细化或使富R相分散，也可以从晶界到主相分散Dy等稀土类元素。 无法扩散到。\n\n   [0022]\n\n 鉴于上述要点而做出本发明，并且本发明的主要目的是通过将Dy，Tb和Ho集中在主相中来有效地提高矫顽力而不使制造工艺复杂化。 本发明的目的在于提供一种可以使用的R-Fe-Q系稀土类磁铁的制造方法。\n\n [解决问题的手段]\n\n   [0023]\n\n 根据本发明的用于RTQ稀土磁体的原材料合金的生产方法是RTQ稀土合金（R是稀土元素，T是过渡金属元素，并且Q选自B，C，N，Al，Si和P。 从由Nd，Pr，Y，La，Ce，Pr，Sm，Eu，Gd，Er，Tm，Yb和Lu组成的组中选择稀土元素R. 制备含有至少一种选自Dy，Tb和Ho的元素R 大号和至少一种元素R ^ h的熔融合金的步骤； 通过在700℃以上900℃以下的温度范围内迅速冷却至700℃以上1000℃以下，固化合金15秒以上600秒以下的第一冷却工序。 第二冷却步骤是将凝固的合金冷却至400℃或更低的温度。 \n\n   [0024]\n\n 在优选的实施方式中，在将凝固合金的温度保持在该温度范围内的温度时的温度保持步骤为以10℃/分钟以下的冷却速度降低凝固合金的温度的步骤，和/或 可选地，其包括以1℃/分钟或更低的升温速率升高固化合金的温度的步骤。\n\n   [0025]\n\n 在优选的实施方式中，第一冷却工序包括以102℃/秒以上且104℃/秒以下的冷却速度降低合金的熔融金属的温度的工序。\n\n   [0026]\n\n 在优选的实施方式中，第二冷却工序包括以10℃/秒以上的冷却速度降低凝固合金的温度的工序。\n\n   [0027]\n\n 在优选的实施方式中，元素R ^ h占全部稀土元素的5原子％以上。\n\n   [0028] \n\n在优选的实施方式中，紧接第二冷却工序后的凝固合金中的R2T14Q相中所含的元素R ^ h的原子比为元素R在整个稀土元素中的占有率。 它大于 ^ h的原子比。\n\n   [0029]\n\n 在优选的实施方式中，紧接在第二冷却步骤之后，凝固合金中的R2T14Q相中所含的元素R ^ h的原子比占据了全部稀土元素。 它大于元素R ^ h原子比的1.1倍。\n\n   [0030]\n\n 在一个优选的实施方式中，稀土元素R为整体的11原子％以上且17原子％以下，过渡金属元素T为整体的75原子％以上且84原子％以下，元素Q为整体的5原子％以上且8原子％以下。 有。\n\n   [0031]\n\n 在优选的实施方式中，合金选自Ti，V，Cr，Mn，Ni，Cu，Zn，Ga，Zr，Nb，Mo，In，Sn，Hf，Ta，W和Pb。 它包含至少一个附加元素M。\n\n   [0032]\n\n 在一个优选的实施方案中，第一冷却步骤包括用旋转的冷却辊冷却合金熔体的步骤。\n\n   [0033]\n\n 在一个优选的实施方案中，温度保持步骤包括以下步骤：利用加热到700℃以上且900℃以下的温度的构件向快速凝固的合金供热。\n\n   [0034]\n\n 本发明的RTQ系稀土磁体原料合金粉末的制造方法包括通过氢脆法使通过上述制造方法中的任一种制造的RTQ系稀土磁体原料合金的脆化步骤。 并且粉碎用于RTQ基稀土磁体的原材料合金的步骤。\n\n   [0035]\n\n 在优选的实施方式中，在粉碎R-T-Q稀土磁体的步骤中，使用惰性气体的高速流来精细粉碎R-T-Q稀土磁体。\n\n   [0036]\n\n 根据本发明的烧结磁体的制造方法是以下步骤：制备通过上述生产方法中的任一种生产的用于RTQ稀土磁体的原材料合金粉末，生产粉末的压坯，并将该压坯烧结。 和执行的步骤。\n\n   [0037]\n\n 在优选的实施方式中，当从形成液相的温度（800℃）加热到烧结密度达到真密度的温度时，在脱氢步骤之后进行烧结成型体的步骤。 将温度速率设置为5℃/ mim或更高。\n\n   [0038]\n\n 本发明的RTB系稀土磁铁原料合金是通过上述制造方法制造的RTB系稀土磁铁原料合金，其含有主相和富R相以及富R相的主要成分。 在相和富R相之间的界面接触部分中元素R ^ h的浓度低于在主相和主相界面之间接触部分中元素R ^ h的浓度 在短轴方向上构成晶体的晶粒的尺寸在3μm至10μm的范围内。\n\n [本发明的效果]\n\n   [0039]\n\n 根据本发明，在通过冷却熔融合金来生产固化合金的过程中，通过执行将固化合金在冷却过程中保持在700°C或更高且900°C或更低的温度范围内的步骤，可以去除重稀土元素如Dy。 它可以从晶界扩散到主相。 在本发明中，在冷却步骤完成之后，不必加热并加热到降低到室温水平的固化合金，因此不大可能发生晶粒长大，并且可以获得具有精细结构的合金，例如Dy。 可以充分发挥由重稀土元素引起的矫顽力提高的效果。\n\n [附图简述]\n\n   [0040]\n\n 图1是示意性示出淬火过程中合金的温度与经过时间之间的关系的图。\n\n 图2是示意性地表示本发明的实施方式的淬火处理中的合金温度与经过时间之间的关系的图。\n\n 图3是示出可以适当地用于实现本发明的设备的配置的设备。\n\n 图4是示意性地表示凝固合金的组织的图。\n\n [符号说明]\n\n   [0041]\n\n 1个坩埚\n\n 2中间包\n\n 4个冷却辊\n\n 5凝固合金\n\n 6桶形容器（保温装置）\n\n 7马达\n\n 实施本发明的最佳模式\n\n   [0042]\n\n 在本发明中，首先，基于RTQ的稀土合金（R是稀土元素，T是过渡金属元素，Q是选自由B，C，N，Al，Si和P组成的组中的至少一种元素） 准备熔融金属。 该RTQ基稀土合金，作为稀土元素R，Nd，Pr，Y，La，Ce，Pr，Sm，Eu，Gd，Er，Tm，Yb和选自由Lu组成的组中的至少一种元素 它包含R 大号和至少一个选自Dy，Tb和Ho的元素R ^ h。\n\n   [0043]\n\n 接着，将具有上述组成的熔融合金迅速冷却而生成凝固合金，以下，在“温度保持”下详细说明本发明人在迅速冷却熔融合金而制成凝固合金的过程中。 通过执行“步骤”，发现位于凝固合金的晶界相中的元素R ^ h可以被转移到主相中并集中在主相中，从而构思了本发明。\n\n   [0044]\n\n 在下文中，参考图1，将描述在本发明中执行的温度保持步骤。\n\n   [0045]\n\n 图1是示意性示出淬火过程中合金的温度与经过时间之间的关系的图。 图的纵轴是合金温度，横轴是从淬火开始起经过的时间。\n\n   [0046]\n\n 在图1所示的例子中，在从时刻t0到时刻t1的期间，进行熔融合金的第一冷却工序S1，在时刻t1到时刻t2的期间内维持温度。 执行步骤S2。 之后，从时刻t2到时刻t3执行第二冷却步骤S3。\n\n   [0047]\n\n 首先，让我们考虑一种情况，其中通过使用普通的带铸方法来生产凝固合金，该方法通过使熔融合金与旋转冷却辊的外周表面接触来制造带状凝固合金。 在这种情况下，在时间t0，熔融合金与冷却辊的表面接触，并且开始通过冷却辊的除热。 之后，熔融合金在旋转的冷却辊上移动的同时被进一步迅速冷却，并且在时间t1以凝固状态从冷却辊的表面分离。 离开冷却辊的合金温度通常在800-1000°C的范围内。 在常规的带铸方法的情况下，离开冷却辊的凝固合金的温度由于诸如空气冷却的二次冷却而降低，并最终达到室温（例如室温）。 在图1的曲线图中，由虚线表示的温度变化表示当通过常规的带钢铸造方法进行冷却时获得的时间t之后的温度变化1。\n\n   [0048]\n\n 与这种传统的冷却过程相反，本发明的特征在于，从时间t1到时间t2执行温度保持过程。 在图1的曲线图中，用实线表示根据本发明的合金温度的变化。 从图1可以看出，在温度保持步骤S2结束的时间t2之后执行的第二冷却步骤S3中，类似于传统示例中虚线所示的温度变化，是通过自然冷却，例如达到大约室温。 温度正在下降。\n\n   [0049]\n\n 在本发明中执行的温度保持步骤S2中，将合金在700℃以上且900℃以下的温度范围内的预定温度下保持15秒以上且600秒以下。 在开始温度保持步骤S2时，认为在淬火合金的晶界处，诸如Dy，Tb和Ho的元素R ^ h基本均匀地分布在晶界或主相中。  。 然而，在温度保持步骤S2中，存在于晶界中的诸如Dy的元素R ^ h扩散到主相中，而元素R 大号从主相扩散到晶界中。 发生。 在700°C以上且900°C以下的保持温度下，凝固合金中的主相几乎完全凝固，但由于稀土成分大且熔点低，因此凝固合金的至少一部分处于液相状态。 认为当部分晶界处于液相时，诸如Dy的元素R ^ h从晶界主动扩散到主相。\n\n   [0050]\n\n 图4是示意性地表示凝固合金的组织结构的图。 主相由R2T14Q相构成，晶界由富R相构成，该富R相以高浓度含有稀土元素R。 根据本发明，由于合金被冷却以遵循图1中实线所示的温度分布，因此在图3所示的晶界中诸如Nd 大号的元素R相对增加。 获得其中元素R ^ h集中在主相中的结构，结果，可以改善矫顽力。\n\n   [0051]\n\n 通过执行本发明的温度保持步骤S2，如图4所示，用于R-T-B稀土磁体的原材料合金的晶体相不会粗化，并且Dy从富R相扩散到主相。 以此方式，在主相的外部中形成了富含Dy的层。 因此，通过执行温度保持步骤S2，在保持由淬火步骤生产的RTB基稀土磁体原料合金中的主相晶粒的粒径分布陡峭（陡峭）的同时，Dy浓缩层 可以获得矫顽力改善效果。\n\n   [0052]\n\n 富含Dy的层不必形成在主相的整个外表面上，而可以形成在外壳的一部分上。 即使当Dy富集层形成在主相的壳的一部分上时，也可以获得提高矫顽力的效果。\n\n   [0053]\n\n 然后将如此获得的固化合金粉碎并粉碎。 当在粉碎步骤之前进行氢脆化处理时，晶界相部分容易暴露在粉末表面上，因此在惰性气体中进行粉碎步骤，并且惰性气体中的氧浓度为1体积％以下。 最好进行调整 如果大气中的氧气浓度超过1体积％并且变得太高，则粉末颗粒在粉碎步骤中被氧化，并且一些稀土元素在氧化物的生产中被消耗。 当在用于稀土磁体的原材料合金粉末中产生大量的对磁性无贡献的稀土氧化物时，主相R2T14Q基晶相的丰度比降低，导致磁体特性下降。 将完成。 另外，在晶界容易产生元素R ^ h的氧化物，主相中的元素R ^ h的浓度降低。 可以通过使用诸如喷射磨，磨碎机，球磨机等的粉碎装置来进行这样的精细粉碎。 在美国申请09 / 851,423中公开了通过气流粉碎机的粉碎。\n\n   [0054]\n\n 在下文中，将更详细地描述本发明的优选实施方式。\n\n   [0055] \n\n首先，制备R-T-Q稀土合金的熔体。 作为稀土元素R，选自Nd，Pr，Y，La，Ce，Pr，Sm，Eu，Gd，Er，Tm，Yb，Lu和Dy中的至少一种元素R 大号。  ，Tb和Ho，以及选自以下的至少一个元素R ^ h： 在此，为了获得充分的矫顽力提高效果，将稀土元素整体中的元素R ^ h的原子数比（摩尔比）设定为5％以上。 在优选的实施方式中，稀土元素R的含量为合金整体的11at％以上且17at％以下，有助于提高矫顽力的元素R ^ h为稀土元素R的10at％以上。 占用。\n\n   [0056]\n\n 过渡金属元素T可以包含Fe作为主要成分（占T的50原子％以上），其余可以包含Co和/或Ni等过渡金属元素。 过渡金属元素T的含量占合金整体的75原子％以上且84原子％以下。\n\n   [0057]\n\n 元素Q以B为主要成分，由C，N，Al，Si和P构成，它们是可以代替四方Nd2Fe14B晶体结构中的B（硼）的元素。 它可以包括从组中选择的至少一个。 元素Q的含量为整个合金的5原子％以上且8原子％以下。\n\n   [0058]\n\n 除上述主要元素外，该合金还选自Ti，V，Cr，Mn，Ni，Cu，Zn，Ga，Zr，Nb，Mo，In，Sn，Hf，Ta，W和Pb。 可以添加至少一个附加元素M。\n\n   [0059]\n\n 具有上述组成的原料合金的熔体与带钢铸造设备的冷却辊的表面接触以快速固化。 作为本实施方式的带钢铸造装置，例如可以使用具有图3所示的结构的装置。\n\n   [0060]\n\n 图3的设备是能够储存熔融合金的倾斜指示坩埚1，用于接收从坩埚1供应的熔融合金的中间包2，以及用于在将中间包2拉起的同时快速冷却熔融合金的冷却装置。 配有卷4和。\n\n   [0061]\n\n 该装置包括：鼓状容器6，其用于对与旋转的冷却辊4的表面分离的凝固合金5的薄带执行温度保持步骤；以及电动机7，其用于旋转驱动鼓状容器6。 是 鼓状容器6的至少内壁部的温度通过加热器（未图示）等被保持在700℃以上且900℃以下的范围内。 通过调节该加热器的输出，可以改变凝固合金5的保持温度。 当在保持温度的步骤中使电动机7旋转时，凝固合金5的薄条被切成例如长度为几厘米的板坯，但是由于在鼓状容器6中被搅拌，因此基本上形成了许多板坯。 您将获得均匀的温度保持过程。 在完成温度保持步骤之后，从鼓形容器6中取出凝固合金5的铸坯，然后通过自发冷却进一步降低温度。 由于优选以尽可能高的速率冷却从鼓形容器6中取出的凝固合金5，因此可以吹入冷却气体（例如，氮气）。\n\n   [0062]\n\n 当使用图3所示的设备实施本发明时，第一冷却步骤在熔融合金与冷却辊5的表面接触时开始，并且一直持续到与冷却辊5的表面分离为止。 第一冷却步骤的时间例如为约0.1秒至10秒。 通过将冷却辊的旋转速度（表面圆周速度）调节在适当的范围内（例如1m /秒以上且3m /秒以下），第一冷却步骤中的冷却速度为102°C /秒。 调整为104°C / sec或更低的范围。 如果在第一冷却步骤中凝固的合金的温度降低太多，则需要额外的热处理以将温度升高至随后的温度保持步骤所需的温度，这不是优选的。 因此，在第一冷却步骤中，期望将合金温度降低至700℃以上且1000℃以下的范围。\n\n   [0063]\n\n 当将凝固的合金5容纳在鼓形容器6内时，执行在第一冷却步骤之后执行的温度保持步骤。 在图1所示的例子中，在时刻t1，在第一冷却工序结束后，立即开始温度保持工序，但在使用图3所示的装置的情况下，冷却了凝固合金5。 温度保持步骤的开始时间被延迟从卷5移动到鼓形容器6中所花费的时间。 如果以此方式延迟保温步骤的开始，则在此期间凝固合金5的温度将下降，但是如果温度不低于700℃，则没有问题。 例如，当保持温度设置为800℃时，紧接在温度保持步骤开始之前的凝固合金5的温度可能下降至750℃。 在这种情况下，至少在温度保持步骤的初始阶段中，将固化的合金5在鼓形容器6中加热以将温度从750℃升高到800℃。 即使发生这种温度上升，在这段时间内，诸如Dy的元素R ^ h也从晶界扩散到主相，从而可以获得提高矫顽力的效果。 此外，由于温度保持步骤为600秒以下的短时间，因此晶粒的粗大化不会成为问题。\n\n   [0064]\n\n 如上所述，本发明中的“温度保持步骤”不仅仅意味着将固化合金的温度严格保持在恒定水平的情况，并且在冷却步骤的中间自然冷却冷却速率一定时间。 与1相比，通过故意降低温度来延长通过700℃以上且900℃以下的温度范围的时间。\n\n   [0065]\n\n 通常，在通过带材浇铸法等制造凝固合金的情况下，从冷却辊分离的凝固合金通过与大气或输送部件接触而被加热。 因此，为了执行本发明中的温度保持步骤，需要抵抗这种自然冷却（除热）向凝固的合金提供热量。 从这个意义上讲，本发明的“温度保持步骤”用作冷却期间执行的一种热处理步骤。\n\n   [0066]\n\n 此外，实际上，即使试图使凝固合金的温度保持恒定，也不可避免地会发生一些温度变化。 例如，即使以10°C / min或更低的冷却速率进行适度冷却，或者以1°C / min或更低的加热速率进行极其温和的温度升高，与正常冷却过程相比，温度基本恒定 被确认为被拘留。 图2示意性地示出了在温度保持步骤S2中合金温度逐渐降低的示例（实线）和温度升高和降低的示例（虚线）。 即使在这种情况下，诸如Dy的元素R ^ h也可以从晶界扩散到主相，并且可以提高矫顽力。\n\n   [0067]\n\n 如果保温步骤太长，则可能会发生晶粒长大并且矫顽力可能降低，因此，保温时间优选设为15秒以上且600秒以下。\n\n   [0068]\n\n 通过这样的温度保持步骤，从Dy，Tb和Ho组成的组中选择的至少一种元素R ^ h集中在主相中。 如上所述，保持温度可以在700℃以上且900℃以下的范围内任意设定，但优选设定为约700℃〜800℃的温度。\n\n   [0069]\n\n 在保温步骤之后进行的第二冷却步骤中，优选通过以相对较大的冷却速率冷却合金，以10℃/秒或更高的冷却速率将固化的合金冷却至室温（约室温）。 可以被充分抑制。 在第二冷却步骤中，由于与大气气体接触而引起的自然冷却可能就足够了，但是将冷却气体喷射到凝固的合金上或者使冷却构件与凝固的合金接触使得可以进行正冷却过程。 好啊\n\n   [0070]\n\n 这些系列的步骤优选在真空或惰性气体气氛中进行。 在图3所示的装置中，第一冷却步骤，温度保持步骤和第二冷却步骤在与大气隔开的腔室中进行，但是在第二冷却步骤的后半段中，凝固合金5的温度相当高。 由于其降至非常低的水平，因此即使暴露在大气中也几乎不会出现由于氧化等引起的质量下降的问题。 因此，第二冷却步骤的一部分或全部可以在腔室外部执行。\n\n   [0071]\n\n 温度保持步骤不限于使用图3所示的设备的情况，并且可以通过另一种方法来执行。 例如，可以在传送从带材铸造设备的冷却辊分离的淬火合金的同时执行温度保持步骤。 在这种情况下，可以在输送路径上布置通过加热器的加热部分，以抑制从冷却辊输送的凝固合金的自然散热。\n\n   [0072]\n\n 如此制得的淬火合金（带坯铸造合金）中，R2T14Q相为主相（R为稀土元素，T为过渡金属元素，Q为B， 形成选自由C，N，Al，Si和P组成的组中的至少一种元素。  R2T14Q相（主相晶粒）的短轴尺寸（平均尺寸）为3μm以上且10μm以下，长轴尺寸为10μm以上且300μm以下的针状晶体（树突）。  ）。\n\n   [0073]\n\n 在第二冷却步骤结束时的（初生）凝固合金中，主相R2T14Q相中元素R ^ h的浓度为R2T14实现了主相中元素R ^ h的浓度，该浓度高于Q相以外的其他相（晶界相等）中元素R ^ h的浓度。\n\n   [0074]\n\n 这是因为通过执行温度保持步骤，在第一冷却步骤结束时存在于晶界相部分中的元素R ^ h移至主相R2T14Q相，  R2T14表示在Q相中富集。 因此，最终，R2T14Q相中的元素R ^ h的浓度高于R2T14Q相以外的元素R ^ h的浓度。 获得合金。 淬火合金中树枝状晶体的间距在保温步骤之前和之后几乎不变。 因此，R2T14Q相的短轴方向的尺寸在3μm以上且10μm以下的范围内几乎没有变化，即使树枝状晶体生长，其生长量也短。 轴向最大为1至2μm。\n\n   [0075]\n\n 在本发明中，由于不使用通过再次加热一旦冷却至室温的快速冷却的合金来扩散Dy的方法，因此可以抑制由于诸如Dy的这种加热而导致的晶粒的粗化。 可以有效地提高稀土元素的矫顽力增加效果。\n\n   [0076] \n\n接下来，在通过上述方法通过氢脆法使固化的合金脆化之后，通过使用诸如喷射磨机的粉碎机将其粉碎成细粉。 所得干粉的平均粒径（F.S.S.S.粒径）为例如3.0〜4.0μm。 在喷射磨设备中，使用惰性气体的高速流粉碎原料合金，在惰性气体中已引入预定量的氧气。 惰性气体中的氧浓度优选调整为1体积％以下。 氧浓度更优选为0.1体积％以下。\n\n   [0077]\n\n 在本发明中，以这种方式限制研磨中的气氛中的氧气浓度的原因是，从晶界相向主相移动的元素R ^ h不会移动而不会通过氧化而再次在晶界相部分中析出。 这是因为 当粉末中含有大量的氧气时，诸如Dy，Tb和Ho的重稀土元素R ^ h倾向于与氧气结合形成更稳定的氧化物。 在本发明中使用的合金结构中，氧在晶界相中比在主相中分布更多，因此主相中的元素R ^ h再次扩散到晶界相中并在那里被消耗以形成氧化物。 这被认为是一件事。 当元素R ^ h以这种方式从主相流出时，不能实现矫顽力的充分提高。 好\n\n   [0078]\n\n 接下来，使用压粉装置，将粉末在取向磁场中压缩以成型为期望的形状。 这样得到的粉体在例如10-4Pa以上且106Pa以下的惰性气体气氛中烧结。 如上所述，期望通过在氧浓度被限制在预定水平以下的气氛中进行烧结处理来使包含在烧结体（烧结磁体）中的氧的浓度为0.3质量％以下。\n\n   [0079]\n\n 烧结温度优选设定为使得集中在主相中的Dy在长时间的烧结过程中不扩散。 具体而言，从液相形成温度（800℃）到烧结密度达到真密度的温度的升温速度可以设定在5℃/ mim以上且50℃/ mim以下的范围内。 首选。 当烧结过程中的升温速率设定在5°C / mim以上且50°C / mim以下时，集中在粉末状凝固合金主相中的Dy通过等温保温再次扩散到富R相中。 可以被抑制。\n\n   [0080]\n\n 通过进行氢脆处理而粗粉碎的淬火合金的粉末含有氢，但为了从合金粉末中除去这种氢，在1000℃以上进行烧结之前，应将淬火的合金加热至800℃以上。 可以将温度在等于或小于℃（例如900℃）的温度下保持30分钟至6小时。 当进行这样的脱氢步骤时，在脱氢步骤之后以上述升温速度进行加热。\n\n   [0081]\n\n 经过脱氢处理，使温度保持在800℃至1000℃的范围内，当进行烧结时，温度应从5℃/ mim升高到50℃/ mim。 由于与此相关的晶粒长大被抑制，因此也可以抑制由于等温保持而提高的矫顽力的降低。\n\n   [0082]\n\n 烧结后，可以在400℃至900℃的温度范围内进行再加热处理。 通过进行这样的再加热处理，可以控制晶界相，并且可以进一步提高矫顽力。\n\n   [0083]\n\n [实施例和比较例]\n\n 首先，以质量比构成具有22％的Nd-6.0％的Pr-3.5％的Dy-0.9％的Co-1.0％的B-平衡Fe（不可避免地与其他杂质混合的微量杂质）的合金熔体作为单辊。 具有上述组成的凝固合金是通过用1中所述的带铸法淬火制备的。\n\n   [0084]\n\n 即将开始淬火之前的熔融金属的温度为1350℃，辊表面的圆周速度为70m / min。 在第一冷却步骤中，通过使用如图1所示的带材浇铸装置，将固化的合金的温度降低至约700至800℃。 然后，在下表1所示的条件下对图3的鼓状容器6进行温度保持步骤，然后进行第二冷却步骤，其冷却至室温。\n\n   [0085]\n\n   [0086]\n\n 在4号样品的比较例中，单调连续冷却过程一直持续到室温，而没有进行温度保持过程。\n\n   [0087]\n\n 对于这样制备的1-4号样品的凝固合金，通过EPMA（电子探针显微分析仪）进行线分析，该EPMA通过照射电子束来检测特征X射线，发现Dy的浓度高于晶界相。 还证实了，Nd和Pr在晶界相中比在主相中高。 此外，当用BH示踪剂测量磁性能时，获得下表2中所示的结果。\n\n   [0088]\n\n   [0089]\n\n 从表2可以看出，样品1至3的矫顽力H J为20.1至20.5kOe，而样品4的矫顽力H J为19.5kOe。 如上所述，关于保持力H J，可以确认，实施例的值比比较例的值高5％。\n\n   [0090]\n\n 在本实施例中，如上所述，由于将微粉碎工序中的氧浓度调整为适当的范围，因此可以抑制在烧结工序中Dy向晶界的扩散，提高了矫顽力。 可以实现。\n\n [工业可用性]\n\n   [0091]\n\n 根据本发明，为了提高矫顽力而添加的Dy等元素R ^ h 可以通过在熔融合金的冷却过程中进行的保温步骤而集中在主相中。 因此，可以有效地利用稀有重稀土元素并提高矫顽力而无需单独执行特殊的热处理步骤。');
INSERT INTO `os_patent_instruction_text` VALUES (13054, 22883, 'TECHNICAL FIELD \n\n[0001]The present invention relates to a method of making a material alloy for a rare-earth magnet, a method of making a material alloy powder for a rare-earth magnet, and a method for producing a sintered magnet using the rare-earth magnet material alloy powder.\n\nBACKGROUND ART \n\n[0002]A neodymium-iron-boron based magnet has a higher maximum energy product than any of various types of magnets, and is relatively inexpensive. That is why such a magnet has been used more and more often as an important part of an HDD, an MRI or a motor in a broad variety of electronic devices.\n\n[0003]A neodymium-iron-boron based magnet is a magnet including Nd 2 Fe 14 B type crystals as its main phase and is sometimes called an \"R-T-B based magnet\" more generically, where R is a rare-earth element, T is a transition metal element, most of which is Fe but which may also include Ni and Co, and B is boron. However, since B may be partially replaced with an element such as C, N, Al, Si and/or P, at least one element selected from the group consisting of B, C, N, Al, Si and P will be referred to herein as \"Q\" and a rare-earth magnet, which is usually called a \"neodymium-iron-boron based magnet\" will be referred to herein as an \"R-T-Q based rare-earth magnet\" more broadly. In an R-T-Q based rare-earth magnet, R 2 T 14 Q crystal grains form its main phase.\n\n[0004]A material alloy powder for an R-T-Q based rare-earth magnet is often made by a process including a first pulverization process step for coarsely pulverizing the material alloy and a second pulverization process step for finely pulverizing the material alloy. For example, in the first pulverization process step, the material alloy is coarsely pulverized to a size of several hundreds of micrometers or less by a hydrogen decrepitation process. In the second pulverization process step, the coarsely pulverized material alloy (coarsely pulverized powder) is finely pulverized to a mean particle size of about several micrometers using a jet mill pulverizer, for example.\n\n[0005]The magnet material alloy itself may be made by any of a number of methods, which are roughly classified into the following two types. The first type is an ingot casting process, in which a molten alloy with a predetermined composition is poured into a die and cooled relatively slowly. The second type is a rapid cooling process such as a strip casting process and a centrifugal casting process, in which a molten material alloy with a predetermined composition is rapidly cooled through a contact with a single roller, twin rollers, a rotary disk or a rotary cylindrical die, thereby making a solidified alloy, which is thinner than an ingot cast alloy, from the molten alloy.\n\n[0006]In the rapid cooling process, the molten alloy is cooled at a rate of 10 1[0007]As the rapidly cooled alloy has been cooled in a shorter time than an alloy made by the conventional ingot casting process (i.e., the ingot cast alloy), the rapidly cooled alloy has a fine structure and has smaller crystal grain sizes. In addition, the crystal grains are distributed finely, the grain boundary has a wide area, and the R-rich phases are distributed thinly over the grain boundary. Such a good distribution of the R-rich phases improves the sinterability. That is why a rapidly cooled alloy has been used more and more often as a material to make an R-T-Q based rare-earth sintered magnet with good properties.\n\n[0008]If a rare-earth alloy (especially a rapidly cooled alloy) is coarsely pulverized by a so-called \"hydrogen pulverization process\", in which the alloy is made to occlude hydrogen gas once (and which will be referred to herein as a \"hydrogen decrepitation process\"), the R-rich phases present on the grain boundary will react with hydrogen and expand. As a result, the alloy tends to crack from the R-rich phase portions (i.e., grain boundary portions). Therefore, the R-rich phases tend to be exposed on the surfaces of powder particles, which have been obtained by pulverizing the rare-earth alloy by the hydrogen pulverization process. Besides, in the rapidly cooled alloy, the R-rich phases have such small sizes and have been distributed so uniformly that the R-rich phases are exposed on the surface of the hydrogen-pulverized powder particularly easily.\n\n[0009]Such a pulverization method using the hydrogen decrepitation process is disclosed in United States Patent Application No. 09/503,738, for example.\n\n[0010]A technique of substituting Dy, Tb, and/or Ho for a portion of a rare-earth element R to increase the coercivity of such an R-T-Q based rare-earth magnet is known. At least one element selected from the group consisting of Dy, Tb and Ho will be referred to herein as \"R H \".\n\n[0011]However, the element R H  that has been added to the R-T-Q based rare-earth magnet material alloy will be present not only in the R 2 T 14 Q phase as the main phase but also in the grain boundary phase substantially uniformly after the molten alloy has been rapidly cooled. The element R H , present in those grain boundary phases, does not contribute to increasing the coercivity, which is a problem.\n\n[0012]The high concentration of the element R H  in the grain boundary will decrease the sinterability, which is also a problem. This problem becomes non-negligible if the ratio of the element R H  to the overall material alloy is 1.5 at% or more and gets serious once this ratio has exceeded 2.0 at%.\n\n[0013]Also, the grain boundary phase portions of the solidified alloy easily turn into a superfine powder (with particle sizes of 1 µm or less) as a result of a hydrogen decrepitation process and a fine pulverization process. Even if those portions have not changed into the superfine powder, they tend to have exposed powder surfaces. The superfine powder is likely to cause oxidation and firing problems and does affect the sinterability. That is why the superfine powder is usually removed during the pulverization process. A rare-earth element that is exposed on the surface of powder particles with particle sizes of 1 µm or more is oxidized easily and the element R H  is oxidized more easily than Nd or Pr. Thus, the element R H , present in the grain boundary phase of the alloy, produces a chemically stable oxide and tends to get precipitated continuously in the grain boundary phase without substituting for the rare-earth element R in the main phase.\n\n[0014]Consequently, portions of the element R H  that are present in the grain boundary phase of a rapidly cooled alloy cannot be used effectively to increase the coercivity. The element R H  is a rare-to-find element and is expensive, too. For that reason, to use valuable natural resources more efficiently and to cut down the manufacturing cost, it is strongly recommended to avoid such a waste of that precious element.\n\n[0015]To overcome these problems, Patent Document No. 1 proposes that a rapidly cooled and solidified alloy, made by a strip casting process, be subjected to a heat treatment process at a temperature of 400 °C to 800 °C for 5 minutes to 12 hours to move the heavy rare-earth element from the grain boundary into the main phase and set the concentration of that element higher in the main phase.\n\n[0016]Patent Documents Nos. 2 and 3 also disclose that the process of rapidly cooling a molten alloy should be controlled to regulate the structure of the resultant rapidly cooled alloy, not to increase the concentration of Dy in the main phase.\n\n[0017]Specifically, Patent Document No. 2 proposes that in order to further reduce the grain size of the rapidly cooled alloy structure, the process of rapidly cooling a molten alloy be divided into the two stages of first cooling and second cooling and that the cooling rates in the respective stages be controlled within particular ranges.\n\n[0018]Patent Document No. 3 proposes that just after having been made by getting a molten alloy cooled rapidly by a chill roller, a thin-strip rapidly cooled and solidified alloy be stored in a container to have its temperature controlled. According to the method disclosed in Patent Document No. 3, the average cooling rate is controlled to the range of 10 °C /min to 300 °C/min when the temperature of the alloy falls from 900 °C to 600 °C during the rapid cooling process, thereby controlling the distribution of the R-rich phases. \n\n Patent Document No. 1: Japanese Patent Application No. 2003-507836, Patent Document No. 2: Japanese Patent Application Laid-Open Publication No. 8-269643, and Patent Document No. 3: Japanese Patent Application Laid-Open Publication No. 2002-266006 \n\n[0019]Alternatively, European patent application EP 0 801 402 A1, which is directed to a cast alloy for the production of a rare-earth permanent magnet and to a method for producing the cast alloy, discloses that the magnetic properties of rare-earth magnets are improved by means of forming a special structure of the cast alloy used for the production of a rare-earth magnet. This structure contains from 27% to 34% by weight of at least one rare-earth element (R) including yttrium, from 0.7% to 1.4% by weight of boron, and the balance being essentially iron and, occasionally any other transition element. Furthermore the structure comprises an R 2 T 14 B phase, an R-rich phase and optionally at least one ternary phase except for the R 2 T 14 B phase and the R-rich phase. The special structure disclosed is that the volume fraction (V) in percentage of said R 2 T 14 B phase and said at least one ternary phase is more than 138 - 1.6r (where r represents the content of R), the average grain size of the R 2 T 14 B phases is from 10 to 100 µm and, further, the average spacing between the adjacent R-rich phases is from 3 to 15 µm. Said structure can be formed by means of feeding alloy melt onto a rotary casting roll. The alloy melt is then subjected to cooling in a temperature range of from melting point to 1000 °C at a cooling rate of 300 °C per second or more, and then further cooling is performed in a temperature range of from 800 to 600 ° C at a cooling rate of 1 °C/sec or less. This relatively low cooling rate contributes to promote the formation of the R 2 T 14 B phase from the melt remaining in the temperature range of from 800 to 600 °C for a longer time.\n\n[0020]The purpose of JP 8 176755 is to obtain an alloy for a high performance rare-earth element magnet without using a complex process or device by preparing an alloy for a magnet. The alloy essentially consists of a rare-earth element, transition metals and boron and has a specified size of a phase which has lower rare-earth element content in an eutective crystal region in the minor axial direction. The disclosed R-T-B alloy ingot essentially consists of R representing at least one of rare-earth elements including Y, T representing transition metals essentially including Fe, and B (boron). This alloy ingot is subjected to cast, followed by a heating treatment step to 800 - 1150 °C, and then cooled at ≤5 °C/sec cooling rate from 800 °C to 600 °C. The size of a phase having a lower R content in an eutective crystal region in the minor axial direction can be regulated to ≤5 µm which is almost equal to a particle diameter by pulverization giving powder for compacting in a magnetic field in a magnet producing process and the objective alloy suitable for use as starting material for an R-Fe-B sintered magnet having high characteristics is obtained.\n\n[0021]A system for producing an alloy which contains rare-earth metals is also disclosed in WO 03/100103 A1, wherein the alloy consists of 32.8 mass % neodymium, 1.02 mass % boron, 0.28 mass % aluminum, and iron as the balance. It is further an object to provide a manufacturing system for alloys containing rare-earth metals which prevents oxidation of the alloy during production, facilitates and improves the efficiency of thermal history control of the alloy performed for obtaining a desired crystal structure, and reduces fluctuation in thermal history of the alloy in the same production lot. To achieve this, the system for producing the alloy has a melting furnace for melting a raw alloy material containing a rare-earth metal, whereas the conditions for melting may suitably be selected depending on the alloy composition. The system further comprises a solidifying device for continuously cooling and solidifying the resulting alloy melt into alloy flakes, for example, a roll-type cooling and solidifying device having twin rolls, a single roll, or the like, a disk-type cooling and solidifying device having a rotating disk or the like. In order to prepare alloy flakes of a uniform thickness, the cooling and solidifying device may be provided with a tundish or the like part for controlling the flow of the alloy melt. The conditions for cooling the melt from 1430 °C to 800 °C alloy flake surface temperature with the cooling and solidifying device is selected depending on the objective alloy containing rare-earth metals, whereas the cooling rate is about 0.525 °C/sec. Furthermore the system comprises a crystal structure controlling device for controlling the alloy crystal structure which may include control of the crystal grain size, the ratio of crystal phases and the shape of precipitated crystals.\n\nDISCLOSURE OF INVENTION \n\nPROBLEMS TO BE SOLVED BY THE INVENTION \n\n[0022]However, these conventional techniques have the following drawbacks.\n\n[0023]According to the method disclosed in Patent Document No. 1, the rapidly cooled alloy is once cooled to a temperature at which the element does not diffuse anymore (e.g., to room temperature) and then heated in a different furnace from the rapid cooling machine, thereby carrying out the heat treatment process at 400 to 800 °C. To conduct the heat treatment process in this manner after the rapid cooling is finished, an additional process of heating the rapidly cooled alloy to the heat treatment temperature is needed, thus complicating the manufacturing process. Besides, the crystal grains will grow excessively and the coercivity will decrease.\n\n[0024]Likewise, according to the methods disclosed in Patent Documents Nos. 2 and 3, the grain sizes of the rapidly cooled alloy structure can be reduced and the R-rich phases can be distributed uniformly, but no particular rare-earth element such as Dy can be diffused from the grain boundary into the main phase.\n\n[0025]In order to overcome these problems, a primary object of the present invention is to provide a method of producing an R-Fe-Q based rare-earth magnet that can increase the coercivity effectively by concentrating Dy, Tb and Ho in the main phase without complicating the manufacturing process.\n\nMEANS TO SOLVE THE PROBLEMS \n\n[0026]A method of making a material alloy for an R-T-Q based rare-earth magnet according to the present invention includes the steps of: preparing a melt of an R-T-Q based rare-earth alloy, where R is rare-earth elements, T is a transition metal element, Q is at least one element selected from the group consisting of B, C, N, Al, Si and P, and the rare-earth elements R include at least one element R L  selected from the group consisting of Nd, Pr, Y, La, Ce, Pr, Sm, Eu, Gd, Er, Tm, Yb and Lu and at least one element R H  selected from the group consisting of Dy, Tb and Ho; cooling the melt of the alloy to a temperature of 700 °C to 1,000 °C as first cooling process, thereby making a solidified alloy; the first cooling process includes the step of decreasing the temperature of the alloy at a cooling rate of 10 2[0027]In one preferred embodiment, the step of maintaining the solidified alloy at a temperature within the range includes the step of decreasing the temperature of the solidified alloy at a temperature decrease rate of 10 °C /min or less or the step of increasing the temperature of the solidified alloy at a temperature increase rate of 1 °C/min or less.\n\n[0028]The first cooling process includes the step of decreasing the temperature of the melt of the alloy at a cooling rate of 10 2[0029]The second cooling process includes the step of decreasing the temperature of the solidified alloy at a cooling rate of 10 °C /s or more.\n\n[0030]In another preferred embodiment, the element R H  accounts for at least 5 at% of the rare-earth elements included.\n\n[0031]In yet another preferred embodiment, just after the second cooling process is finished, the atomicity ratio of the element R H  included in the R 2 T 14 Q phase of the solidified alloy is higher than that of the element R H  to the overall rare-earth elements.\n\n[0032]In yet another preferred embodiment, just after the second cooling process is finished, the atomicity ratio of the element R H  included in the R 2 T 14 Q phase of the solidified alloy is more than 1.1 times as high as that of the element R H  to the overall rare-earth elements.\n\n[0033]In yet another preferred embodiment, the rare-earth elements R account for 11 at% to 17 at% of the overall alloy, the transition metal element T accounts for 75 at% to 84 at% of the overall alloy, and the element Q accounts for 5 at% to 8 at% of the overall alloy.\n\n[0034]In yet another preferred embodiment, the alloy further includes at least one additional element M that is selected from the group consisting of Ti, V, Cr, Mn, Ni, Cu, Zn, Ga, Zr, Nb, Mo, In, Sn, Hf, Ta, W and Pb.\n\n[0035]In yet another preferred embodiment, the first cooling process includes the step of cooling the melt of the alloy with a rotating chill roller.\n\n[0036]In yet another preferred embodiment, the step of maintaining includes the step of transferring heat from a member that has been heated to a temperature of 700 °C to 900 °C to the rapidly cooled alloy.\n\n[0037]A method of making a material alloy powder for an R-T-Q based rare-earth magnet according to the present invention includes the steps of: decrepitating the R-T-Q based rare-earth magnet material alloy, which has been made by one of the methods described above, by a hydrogen decrepitation process; and pulverizing the R-T-Q based rare-earth magnet material alloy that has been decrepitated.\n\n[0038]In one preferred embodiment, the step of pulverizing the R-T-Q based rare-earth magnet includes finely pulverizing the R-T-Q based rare-earth magnet with a high-speed airflow of an inert gas.\n\n[0039]A method for producing a sintered magnet according to the present invention includes the steps of preparing the R-T-Q based rare-earth magnet material alloy powder by one of the methods described above and making a compact of the powder, and sintering the compact.\n\n[0040]In one preferred embodiment, the step of sintering the compact includes controlling a temperature increase rate at 5 °C /min or more when the compact is heated from a temperature of 800 °C, at which a liquid phase is produced, to a temperature, at which sintered density reaches a true density, after a dehydrogenation process is finished.\n\n[0041]An R-T-B based rare-earth magnet material alloy according to the present invention is made by the method described above and includes a main phase and an R-rich phase. The concentration of the element R H  in a portion of the R-rich phase, which is in contact with an interface between the main phase and the R-rich phase, is lower than that of the element R H  in a portion of the main phase, which is also in contact with the interface, and crystal grains that form the main phase have minor-axis sizes of 3 µm to 10 µm.\n\nEFFECT OF INVENTION \n\n[0042]According to the present invention, the step of making a solidified alloy by cooling a molten alloy includes the step of maintaining the temperature of the solidified alloy being cooled within the range of 700 °C to 900 °C. As a result, a heavy rare-earth element such as Dy can be diffused from the grain boundary into the main phase. Also, according to the present invention, after the cooling process step is finished, there is no need to perform a heat treatment process by heating the solidified alloy, of which the temperature has decreased to around room temperature. Consequently, an alloy that hardly produces an excessive grain growth and that has a very small structure can be obtained and the coercivity can be increased effectively enough by a heavy rare-earth element such as Dy.\n\nBRIEF DESCRIPTION OF DRAWINGS \n\n[0043] FIG. 1 is a graph schematically showing how the temperature of an alloy being rapidly cooled changes with time. FIG. 2 is a graph schematically showing how the temperature of an alloy being rapidly cooled changes with time in a preferred embodiment of the present invention. FIG. 3 illustrates a configuration for a machine that can be used effectively to carry out the present invention. FIG. 4 schematically illustrates the microcrystalline structure of a solidified alloy. \n\nDESCRIPTION OF REFERENCE NUMERALS \n\n[0044] 1 crucible \n\n 2 tundish 4 chill roller 5 solidified alloy 6 drum container 7 motor \n\nBEST MODE FOR CARRYING OUT THE INVENTION \n\n[0045]According to the present invention, first, a melt of an R-T-Q based rare-earth alloy, where R is rare-earth elements, T is a transition metal element and Q is at least one element selected from the group consisting of B, C, N, Al, Si and P, is prepared. As the rare-earth elements R, this R-T-Q based rare-earth alloy includes at least one element R L  selected from the group consisting of Nd, Pr, Y, La, Ce, Pr, Sm, Eu, Gd, Er, Tm, Yb and Lu and at least one element R H  selected from the group consisting of Dy, Tb and Ho.\n\n[0046]Next, a solidified alloy is made by rapidly cooling (quenching) a molten alloy with such a composition. The present inventors discovered that by performing the \"temperature maintaining process step\" to be described in detail later in the process step of making a solidified alloy by rapidly cooling such a molten alloy, the element R H  included in the grain boundary phase in the solidified alloy could be moved to the main phase and have an increased concentration in the main phase, thus acquiring the basic idea of the present invention.\n\n[0047]Hereinafter, the temperature maintaining process step to be carried out according to the present invention will be described with reference to FIG. 1.\n\n[0048]FIG. 1 is a graph schematically showing how the temperature of an alloy being rapidly cooled changes with time. In this graph, the ordinate represents the temperature of the alloy and the abscissa represents the time that has passed since the rapid cooling process step was started.\n\n[0049]In the example shown in FIG. 1, a first cooling process step S1 is carried out on the molten alloy from a time to through a time t 1 , the temperature maintaining process step S2 is carried out from the time t 1  through a time t 2 , and then a second cooling process step S3 is carried out from the time t 2  through a time t 3 .\n\n[0050]First, suppose a solidified alloy is made by a normal strip casting process in which a thin-strip solidified alloy is made by bringing a molten alloy into contact with the outer surface of a rotating chill roller. In that case, the molten alloy contacts with the surface of the chill roller at the time t 0 , when the chill roller starts dissipating the heat. Thereafter, the molten alloy is further cooled rapidly while traveling on the rotating chill roller, and then comes out of contact with the surface of the chill roller as a solidified alloy at the time t 1 . The alloy that has left the chill roller usually has a temperature of about 800 °C to about 1,000 °C. According to a conventional strip casting process, the temperature of the solidified alloy that has left the chill roller is decreased by a secondary cooling (such as air cooling) and soon reaches a normal temperature (such as room temperature). In the graph shown in FIG. 1, the dashed line indicates how the temperature changes after the time t 1  if the molten alloy has been cooled by a normal strip casting process.\n\n[0051]The present invention is characterized by performing the temperature maintaining process step from the time t 1  through the time t 2  unlike the conventional cooling process. In the graph shown in FIG. 1, the variation in the temperature of the alloy according to the present invention is represented by the solid line. As can be seen from FIG. 1, in the second cooling process step S3 to start at the time t 2  when the temperature maintaining process step S2 ends, the alloy temperature is decreased to around room temperature, for example, by natural cooling as in the conventional temperature variation represented by the dashed line.\n\n[0052]In the temperature maintaining process step S2 to be carried out in the present invention, the temperature of the alloy is maintained at a predetermined temperature of 700 °C to 900 °C for 15 seconds to 600 seconds. When the temperature maintaining process step S2 is started, the element R H  such as Dy, Tb or Ho would be distributed substantially uniformly either in the grain boundary or in the main phase of the rapidly cooled alloy. However, while the temperature maintaining process step S2 is carried out, a phenomenon that the element R H  such as Dy that has been present in the grain boundary diffuses into the main phase and the element R L  diffuses from the main phase into the grain boundary is observed. At the temperature of 700 °C to 900 °C, the main phase in the solidified alloy has been solidified almost fully. On the other hand, the grain boundary has a lot of rare-earth elements and has a low melting temperature, and therefore, at least a portion of the grain boundary is still in a liquid phase, when the element R H  such as Dy would diffuse actively from the grain boundary into the main phase.\n\n[0053]FIG. 4 schematically illustrates the microcrystalline structure of the solidified alloy. The main phase is an R 2 T 14 Q phase, while the grain boundary is an R-rich phase including rare-earth elements R at a high concentration. According to the present invention, the alloy is cooled following the temperature profile represented by the solid line in FIG. 1. That is why a microcrystalline structure, in which the element R L  such as Nd is included more in the grain boundary shown in FIG. 4 but the element R H  such as Dy has a higher concentration in the main phase, can be obtained. As a result, the coercivity can be increased.\n\n[0054]By performing the temperature maintaining process step S2 of the present invention, the crystalline phases of the R-T-B based rare-earth magnet material alloy never grow excessively and Dy is diffused from the R-rich phase into the main phase as shown in FIG. 4. Thus, a Dy concentrated layer is formed around the outer edges of the main phase. As can be seen, by performing the temperature maintaining process step S2, the main phase crystal grains of the R-T-B based rare-earth magnet material alloy, which have been made by the rapid cooling process, can maintain a sharp particle size distribution and yet the coercivity can be increased effectively by the Dy concentrated layer.\n\n[0055]It should be noted that the Dy concentrated layer does not have to be formed all around the outer edges of the main phase but may be present in only a portion of the outer edges. Even in the latter case, the coercivity can still be increased effectively.\n\n[0056]The solidified alloy obtained in this manner is then pulverized into powder by going through a pulverization process. If a hydrogen decrepitation process is performed before the pulverization process, the grain boundary portions tend to be exposed on the surface of the powder. That is why the pulverization process is preferably carried out in an inert gas and the concentration of oxygen in the inert gas is preferably controlled to 1 vol% or less. The reason is that if the concentration of oxygen in the atmospheric gas exceeded 1 vol%, then the powder particles would be oxidized during the fine pulverization process and part of the rare-earth element would be consumed to generate an oxide. If a lot of rare-earth oxides, not contributing to magnetism, were produced in the material alloy powder to make a rare-earth magnet, then the percentage of the R 2 T 14 Q based crystalline phase as the main phase would decrease and the performance of the resultant magnet would decline. In addition, oxides of the element R H  would be produced more easily on the grain boundary and the concentration of the element R H  would decrease in the main phase. Such a fine pulverization process may be carried out using a jet mill, an attritor, a ball mill or any other pulverizer. A pulverization process using a jet mill is disclosed in United States Patent Application No. 09/851,423, for example.\n\n[0057]Hereinafter, preferred embodiments of the present invention will be described in further detail.\n\n[0058]First, a melt of an R-T-Q based rare-earth alloy is prepared. As the rare-earth elements R, the molten alloy includes at least one element R L  selected from the group consisting of Nd, Pr, Y, La, Ce, Pr, Sm, Eu, Gd, Er, Tm, Yb and Lu and at least one element R H  selected from the group consisting of Dy, Tb and Ho. In this case, to increase the coercivity sufficiently effectively, the atomicity ratio (i.e., the molar ratio) of the element R H  to the overall rare-earth elements is preferably 5% or more. In a preferred embodiment, the rare-earth elements R account for 11 at% to 17 at% of the overall alloy and the element R H  contributing to increasing the coercivity accounts for at least 10 at% of the overall rare-earth elements R.\n\n[0059]The transition metal element T includes Fe as a main ingredient (at least 50 at% of the overall T) but may further include other transition metal elements such as Co and/or Ni as the balance. The transition metal elements T account for 75 at% to 84 at% of the overall alloy.\n\n[0060]The element Q includes B as a main ingredient but may further include at least one element selected from the group consisting of C, N, Al, Si and P, which may substitute for B (boron) in a tetragonal Nd 2 Fe 14 B crystal structure. The element Q accounts for 5 at% to 8 at% of the overall alloy.\n\n[0061]Besides these main elements, the alloy may further include at least one additional element M that is selected from the group consisting of Ti, V, Cr, Mn, Ni, Cu, Zn, Ga, Zr, Nb, Mo, In, Sn, Hf, Ta, W and Pb.\n\n[0062]A melt of the material alloy with such a composition is brought into contact with, and rapidly cooled and solidified by, the surface of the chill roller of a strip caster. In this preferred embodiment, a machine having a configuration such as that shown in FIG. 3 may be used as the strip caster.\n\n[0063]The machine shown in FIG. 3 includes a crucible 1 that is arranged so as to define any tilt angle and reserve a molten alloy, a tundish 2 that receives the molten alloy from the crucible 1, and a chill roller 4 that rapidly quenches the molten alloy, supplied from the tundish 2, while moving it upward.\n\n[0064]The machine further includes a drum container 6 for subjecting a thin strip of the solidified alloy 5, which has left the surface of the rotating chill roller 4, to the temperature maintaining process step and a motor 7 for rotating and driving this drum container 6. At least the inner wall portions of the drum container 6 have their temperature maintained within the range of 700 °C to 900 °C by a heater (not shown), for example. By adjusting the output of this heater, the solidified alloy 5 can be maintained at a different temperature. If the motor 7 is driven in the temperature maintaining process step, then the thin strip of the solidified alloy 5 will be split into cast flakes with lengths of about several centimeters. However, those cast flakes will be stirred up in the drum container 6 and therefore subjected to the temperature maintaining process substantially uniformly. When the temperature maintaining process step is finished, those cast flakes of the solidified alloy 5 are collected from the drum container 6. After that, the temperature of the flakes is further decreased by letting them be cooled naturally. Once collected from the drum container 6, the solidified alloy 5 is preferably cooled at as high a rate as possible. That is why a cooling gas (e.g., nitrogen gas) may be blown against the alloy.\n\n[0065]If the present invention is carried out by using the machine shown in FIG. 3, the first cooling process step begins when the molten alloy contacts with the surface of the chill roller 5 and continues until the alloy leaves the surface of the chill roller 5. The first cooling process step may be performed for about 0.1 seconds to about 10 seconds. In the first cooling process st', '技术领域 \n\n [0001] 稀土磁体材料合金的制造方法,稀土磁体材料合金粉末的制造方法以及使用该稀土磁体材料合金的烧结磁体的制造方法 粉末。 \n\n  背景技术 \n\n [0002] 钕铁硼基磁体比各种磁体中的任何一种具有更高的最大能量乘积,并且相对便宜。 这就是为什么这种磁体越来越广泛地用作各种电子设备中HDD,MRI或电机的重要组成部分。 \n\n [0003] 钕铁硼基磁体是包括Nd 2 Fe 14 B型晶体作为其主要相的磁体,有时更通常称为“ RTB基磁体”,其中R是稀土元素,T是过渡金属 元素,其中大多数是铁,但也可能包括镍和钴,而硼是硼。 然而,由于B可以部分地被诸如C,N,Al,Si和/或P的元素替代,因此将指代选自B,C,N,Al,Si和P的至少一种元素。 本文中将其称为“ Q”,将通常称为“钕铁硼基磁体”的稀土磁体在本文中更广泛地称为“ RTQ基稀土磁体”。 在基于R-T-Q的稀土磁体中,R 2 T 14 Q晶粒形成其主相。 \n\n [0004] 用于R-T-Q基稀土磁体的原料合金粉末通常通过包括用于粗粉碎原料合金的第一粉碎步骤和用于精细粉碎原料合金的第二粉碎步骤的工艺来制造。 例如,在第一粉碎处理步骤中,通过氢碎裂处理将原料合金粗粉碎到几百微米或更小的尺寸。 在第二粉碎处理步骤中,例如,使用喷射式粉碎机将粗粉碎的材料合金(粗粉碎的粉末)细粉碎至约几微米的平均粒径。 \n\n [0005] 磁体材料合金本身可以通过多种方法中的任何一种来制造,大致可分为以下两种类型。 第一种是铸锭法,其中将具有预定组成的熔融合金倒入模具中并相对缓慢地冷却。 第二种是快速冷却工艺,例如带钢铸造工艺和离心铸造工艺,其中具有预定组成的熔融材料合金通过与单辊,双辊,转盘或旋转的接触而被快速冷却。 圆柱形模具,从而由熔融合金制成比铸锭薄的凝固合金。 \n\n [0006] 在快速冷却过程中,熔融合金的冷却速度为10 1 [0007] 由于快速冷却的合金比通过常规的铸锭法制造的合金(即,铸锭合金)在更短的时间内冷却,因此快速冷却的合金具有精细的结构并且具有较小的晶粒尺寸。 另外,晶粒细密地分布,晶界具有宽的面积,并且富R相在晶界上较薄地分布。 富R相的这种良好分布改善了可烧结性。 这就是为什么快速冷却的合金越来越多地用作制造具有良好性能的R-T-Q基稀土烧结磁体的材料的原因。 \n\n [0008] 如果稀土合金(特别是快速冷却的合金)通过所谓的“氢气粉碎工艺”粗粉碎,则该合金一次吸氢(在本文中称为“氢气”) 爆破过程”),存在于晶界的富R相将与氢反应并膨胀。 结果,合金倾向于从富R相部分(即,晶界部分)开裂。 因此,富R相倾向于暴露在粉末颗粒的表面上,该粉末颗粒是通过通过氢粉碎工艺将稀土合金粉碎而获得的。 此外,在快速冷却的合金中,富R相具有如此小的尺寸并且被均匀地分布,使得富R相特别容易地暴露在氢粉碎粉末的表面上。 \n\n [0009] 例如,在美国专利申请No.09 / 503,738中公开了使用氢爆破工艺的这种粉碎方法。 \n\n [0010] 已知用Dy,Tb和/或Ho代替一部分稀土元素R以增加这种基于R-T-Q的稀土磁体的矫顽力的技术。 从Dy,Tb和Ho组成的组中选择的至少一种元素在本文中将被称为“ R H”。 \n\n [0011] 但是,添加到RTQ系稀土类磁铁材料合金中的元素RH不仅在作为主相的R 2 T 14 Q相中存在,而且在熔融合金化后基本均匀地存在于晶界相中。 迅速冷却。 存在于那些晶界相中的元素R H不会有助于提高矫顽力,这是一个问题。 \n\n [0012] 元素R H在晶界中的高浓度将降低烧结性,这也是一个问题。 如果元素R H在整个合金材料中的比例为1.5at%或更大,则这个问题变得不可忽略,并且一旦该比例超过2.0at%,该问题就变得严重。 \n\n [0013] 另外,由于氢破碎处理和精细粉碎处理的结果,固化合金的晶界相部分容易变成超细粉末(粒径为1μm或更小)。 即使那些部分没有变成超细粉末,它们也倾向于具有暴露的粉末表面。 超细粉末可能引起氧化和烧成问题,并确实影响了烧结性。 这就是为什么通常在粉碎过程中除去超细粉末的原因。 与Nd或Pr相比,暴露在粒径为1μm以上的粉末颗粒的表面上的稀土元素容易被氧化,并且元素R H更容易被氧化。 因此,存在于合金的晶界相中的元素R H产生化学上稳定的氧化物,并且趋向于在晶界相中连续沉淀而没有在主相中替代稀土元素R。 \n\n [0014] 因此,存在于快速冷却的合金的晶界相中的元素R H的部分不能有效地用于提高矫顽力。 元素R H是稀有元素,也很昂贵。 因此,为了更有效地利用宝贵的自然资源并降低制造成本,强烈建议避免这种宝贵元素的浪费。 \n\n [0015] 为了克服这些问题,专利文献1提出通过带钢铸造法制造的快速冷却且凝固的合金在400℃至800℃的温度下进行5分钟至12小时的热处理。 将重稀土元素从晶界移动到主相中,并将该元素的浓度设置在主相中较高的位置。 \n\n [0016] 专利文献2和3还公开了应当控制快速冷却熔融合金的过程以调节所得快速冷却合金的结构,而不是增加主相中Dy的浓度。 \n\n [0017] 具体地,专利文献2提出,为了进一步减小快速冷却的合金组织的晶粒尺寸,将快速冷却熔融合金的过程分为第一冷却和第二冷却两个阶段,以及 将各个阶段控制在特定范围内。 \n\n [0018] 专利文献3提出,在通过急冷辊使熔融合金迅速冷却后,将迅速冷却且凝固的薄带状合金保存在容器中,进行温度控制。 根据专利文献3中公开的方法,在冷却过程中,当合金的温度从900℃降至600℃时,将平均冷却速度控制在10℃/ min至300℃/ min的范围内。 快速冷却过程,从而控制富R相的分布。 \n\n  专利文献1:日本专利申请第2003-507836号,专利文献2:日本专利申请公开第8-269643号,以及专利文献3:日本专利申请公开第3号。  2002-266006 \n\n [0019] 备选地,欧洲专利申请EP 0 801 402 A1涉及一种用于生产稀土永磁体的铸造合金以及一种用于生产该铸造合金的方法,该专利公开了改善稀土磁体的磁性能的方法。 通过形成用于生产稀土磁体的铸造合金的特殊结构。 该结构包含按重量计27%至34%的至少一种包括钇的稀土元素(R),按重量计0.7%至1.4%的硼,其余部分基本上是铁,偶尔是任何其他过渡元素。 此外,该结构包括R 2 T 14 B相,富R相和任选地至少一个三元相,R 2 T 14 B相和富R相除外。 所公开的特殊结构是,所述R 2 T 14 B相和所述至少一个三元相的体积分数(V)大于138-1.6r(其中r表示R的含量),即平均晶粒尺寸。  R 2 T 14 B相的α= 10〜100μm,并且,相邻的富R相之间的平均间隔为3〜15μm。 可以通过将合金熔体进料到旋转铸辊上来形成所述结构。 然后,以每秒300℃或更高的冷却速率在熔点至1000℃的温度范围内对合金熔体进行冷却,然后在800至600℃的温度范围内进行进一步冷却。 冷却速度为1°C /秒或更低。 这种相对较低的冷却速率有助于促进由残留在800至600℃温度范围内的熔体长时间形成R 2 T 14 B相。 \n\n [0020] JP 8 176755的目的是通过制备用于磁体的合金而无需使用复杂的工艺或装置来获得用于高性能稀土元素磁体的合金。 该合金主要由稀土元素,过渡金属和硼组成,并具有规定尺寸的相,该相在短轴方向上的共晶区域中具有较低的稀土元素含量。 所公开的R-T-B合金锭主要由代表包括Y的稀土元素中的至少一种的R,代表主要包括Fe的过渡金属的T和硼(硼)组成。 对该铸锭进行铸造,然后进行至800-1150℃的加热处理步骤,然后以≤5℃/秒的冷却速度从800℃冷却至600℃。 通过粉碎,可以将在共轴方向上的共晶区域中的R含量低的相的尺寸调节为≤5μm,该粒径几乎等于粒径,从而得到在磁体制造过程中在磁场中压实的粉末。 得到适合用作具有高特性的R-Fe-B烧结磁体的原材料的目标合金。 \n\n [0021] 在WO 03/100103 A1中还公开了一种用于生产包含稀土金属的合金的系统,其中该合金由32.8质量%的钕,1.02质量%的硼,0.28质量%的铝和余量的铁组成。 进一步的目的是提供一种用于含稀土金属的合金的制造系统,该系统可防止合金在生产过程中的氧化,有助于并提高为获得所需晶体结构而进行的合金的热历史控制的效率,并减少合金的波动。 同一生产批次中合金的热历史。 为了实现这一点,用于生产合金的系统具有用于熔化包含稀土金属的原材料合金的熔化炉,然而可以根据合金组成适当地选择熔化条件。 该系统还包括用于将所得的合金熔体连续冷却并固化成合金薄片的固化装置,例如,具有双辊,单辊等的辊式冷却固化装置,盘式冷却和固化装置。 具有旋转盘等的设备。 为了制备均匀厚度的合金薄片,冷却和固化装置可以设置有中间包或类似部件,以控制合金熔体的流动。 根据包含稀土金属的目标合金,选择使用冷却凝固装置将熔融金属从1430℃冷却至800℃的金属薄片表面温度的条件,而冷却速度为约0.525℃/秒。 此外,该系统包括用于控制合金晶体结构的晶体结构控制装置,该装置可以包括对晶粒尺寸,晶相比和沉淀晶体的形状的控制。 \n\n  发明内容 \n\n  本发明要解决的问题 \n\n [0022] 但是,这些常规技术具有以下缺点。 \n\n [0023] 根据专利文献1中公开的方法,将快速冷却的合金一旦冷却至元素不再扩散的温度(例如,至室温),然后在与快速冷却机不同的炉中加热, 从而在400至800℃下进行热处理过程。 为了在快速冷却结束之后以这种方式进行热处理过程,需要将快速冷却的合金加热至热处理温度的附加过程,从而使制造过程复杂化。 此外,晶粒将过度生长并且矫顽力将降低。 \n\n [0024] 同样地,根据专利文献2和3中公开的方法,可以减小快速冷却的合金结构的晶粒尺寸并且可以均匀地分布富R相,但是没有诸如Dy这样的特定稀土元素可以。 从晶界扩散到主相。 \n\n [0025] 为了克服这些问题,本发明的主要目的是提供一种生产R-Fe-Q基稀土磁体的方法,该方法可以通过将Dy,Tb和Ho集中在主相中而有效地提高矫顽力。 使制造过程复杂化。 \n\n  解决问题的方法 \n\n [0026] 根据本发明的用于RTQ基稀土磁体的材料合金的制造方法包括以下步骤:制备RTQ基稀土合金的熔体,其中R是稀土元素,T是过渡金属。  Q是选自B,C,N,Al,Si和P中的至少一种元素,稀土元素R包括选自Nd,Pr,Y中的至少一种元素RL。  La,Ce,Pr,Sm,Eu,Gd,Er,Tm,Yb和Lu以及选自Dy,Tb和Ho中的至少一种元素RH; 作为第一冷却工艺,将合金的熔体冷却至700℃至1000℃的温度,从而制成凝固的合金; 第一冷却过程包括以10 2的冷却速率降低合金温度的步骤 [0027] 在一个优选的实施方式中,将所述凝固合金保持在所述范围内的温度的步骤包括以下步骤:以10℃/ min或更低的降温速率降低所述凝固合金的温度;或者提高所述合金的温度的步骤。 凝固合金的升温速度为1℃/ min以下。 \n\n [0028] 第一冷却过程包括以10 2的冷却速率降低合金熔体温度的步骤 [0029] 第二冷却过程包括以10℃/ s或更高的冷却速率降低凝固合金的温度的步骤。 \n\n [0030] 在另一个优选的实施方案中,元素R H占所包括的稀土元素的至少5at%。 \n\n [0031] 在又一优选实施方式中,刚结束第二冷却工序后,凝固合金的R 2 T 14 Q相中所含的元素RH的原子比相对于全部稀土元素高。  。 \n\n [0032] 在又一优选实施方式中,紧接在第二冷却过程之后,凝固合金的R 2 T 14 Q相中包含的元素RH的原子比与元素RH的原子比高1.1倍以上。 总体稀土元素。 \n\n [0033] 在又一个优选的实施方案中,稀土元素R占合金总量的11at%至17at%,过渡金属元素T占合金总量的75at%至84at%,元素Q占合金的75at%至84at%。 占合金总量的5 at%至8 at%。 \n\n [0034] 在又一个优选实施例中,合金还包括至少一种选自Ti,V,Cr,Mn,Ni,Cu,Zn,Ga,Zr,Nb,Mo,In,Sn,  Hf,Ta,W和Pb。 \n\n [0035] 在又一个优选实施例中,第一冷却过程包括用旋转的冷却辊冷却合金熔体的步骤。 \n\n [0036] 在又一优选实施例中,保持步骤包括将热量从已经加热到700℃至900℃的构件传递到快速冷却的合金的步骤。 \n\n [0037] 根据本发明的用于RTQ基稀土磁体的材料合金粉末的制造方法包括以下步骤:使通过上述方法之一制得的RTQ基稀土磁体的材料合金分解。 氢爆破过程; 粉碎已破碎的R-T-Q基稀土磁体材料合金。 \n\n [0038] 在一优选实施例中,粉碎基于R-T-Q的稀土磁体的步骤包括用惰性气体的高速气流将所述基于R-T-Q的稀土磁体精细地粉碎。 \n\n [0039] 根据本发明的烧结磁体的制造方法包括以下步骤:通过上述方法中的一种来制备R-T-Q基稀土磁体材料合金粉末,并且将该粉末压制成型,并且将该成型体进行烧结。 \n\n [0040] 在一个优选的实施方案中,烧结压块的步骤包括当将压块从产生液相的800℃的温度加热到60℃的温度时,将升温速率控制在5℃/ min或更高。 脱氢过程结束后,烧结密度达到真密度。 \n\n [0041] 通过上述方法制造根据本发明的R-T-B基稀土磁体材料合金,其包括主相和富R相。 与主相和富R相之间的界面接触的富R相的一部分中的元素RH的浓度低于主相的一部分中的元素RH的浓度, 它们也与界面接触,形成主相的晶粒的短轴尺寸为3 µm至10 µm。 \n\n  发明效果 \n\n [0042] 根据本发明,通过冷却熔融合金来制造凝固合金的步骤包括将被冷却的凝固合金的温度保持在700℃至900℃的范围内的步骤。 结果,诸如Dy的重稀土元素可以从晶界扩散到主相中。 另外,根据本发明,在冷却处理步骤完成之后,不需要通过加热温度已降低至室温附近的固化合金来执行热处理工艺。 因此,可以得到几乎不产生过度晶粒生长并且具有非常小的结构的合金,并且通过诸如Dy的重稀土元素可以充分有效地提高矫顽力。 \n\n  附图说明 \n\n [0043]  图。  1个  图1是示意性地表示被迅速冷却的合金的温度随时间变化的曲线图。  图。  2  图1是示意性地示出在本发明的优选实施方式中被迅速冷却的合金的温度如何随时间变化的曲线图。  图。  3  图1示出了可以有效地用于执行本发明的机器的配置。  图。  4  图1示意性地示出了凝固合金的微晶结构。 \n\n  附图标记说明 \n\n [0044] 1  坩 \n\n 2  中间包 4  冷却辊 5  凝固合金 6  桶装 7  发动机 \n\n  实施本发明的最佳模式 \n\n [0045] 根据本发明,首先,RTQ基稀土合金的熔体,其中R是稀土元素,T是过渡金属元素并且Q是选自由B,C, 制备N,Al,Si和P。 作为稀土元素R,该RTQ基稀土合金包括选自Nd,Pr,Y,La,Ce,Pr,Sm,Eu,Gd,Er,Tm,Yb的至少一种元素RL。  Lu和选自Dy,Tb和Ho中的至少一种元素RH。 \n\n [0046] 接下来,通过快速冷却(淬火)具有这种组成的熔融合金来制造凝固合金。 本发明人发现,通过在随后通过快速冷却这种熔融合金来制造固化合金的工艺步骤中执行稍后将详细描述的“温度保持工艺步骤”,固化合金中晶界相中所包含的元素RH 可以将“α”转移到主相中并增加其在主相中的浓度,从而获得本发明的基本思想。 \n\n [0047] 在下文中,将参考以下内容描述根据本发明要执行的温度保持处理步骤。  图。  1个 。 \n\n [0048]  图。  1个  图1是示意性地表示被迅速冷却的合金的温度随时间变化的曲线图。 在该曲线图中,纵坐标表示合金的温度,横坐标表示自开始快速冷却工艺步骤以来经过的时间。 \n\n [0049] 在所示的示例中  图。  1个 首先,从时刻t 0至时刻t 1对熔融合金进行第一冷却工序S1,从时刻t 1至时刻t 2进行温度保持工序S2,然后进行第二冷却工序。 从时间t 2到时间t 3执行步骤S3。 \n\n [0050] 首先,假设通过常规的带钢铸造工艺来制造凝固合金,其中通过使熔融合金与旋转的冷却辊的外表面接触来制造薄带状凝固合金。 在那种情况下,当冷却辊开始散发热量时,在时间t 0,熔融合金与冷却辊的表面接触。 之后,熔融合金在旋转的冷却辊上行进的同时进一步被迅速冷却,然后在时间t 1不再与冷却辊的表面作为固化合金接触。 离开冷却辊的合金的温度通常为约800°C至约1,000°C。 根据常规的带铸工艺,离开冷却辊的凝固合金的温度通过二次冷却(例如空气冷却)而降低,并很快达到常温(例如室温)。 在图中所示  图。  1个 ,虚线表示如果熔融合金已经通过常规的薄带连铸工艺冷却,则在时间t 1之后温度如何变化。 \n\n [0051] 本发明的特征在于,与传统的冷却方法不同,其特征在于,从时刻t 1到时刻t 2进行温度保持工序。 在图中所示  图。  1个 实线表示根据本发明的合金的温度变化。 从中可以看出  图。  1个 因此,在温度保持工序S2结束的时刻t 2开始的第二冷却工序S3中,例如,如虚线所示的以往的温度变化那样,通过自然冷却使合金温度例如降低至室温左右。 线。 \n\n [0052] 在本发明中执行的温度保持处理步骤S2中,将合金的温度在700℃至900℃的预定温度保持15秒至600秒。 当温度保持过程步骤S2开始时,诸如Ry,Tb或Ho之类的元素R H将基本均匀地分布在快速冷却的合金的晶界或主相中。 但是,在进行温度保持工序S2的过程中,观察到存在于晶界中的例如Dy等元素RH向主相扩散,而RL从主相向晶界扩散的现象。  。 在700°C至900°C的温度下,凝固合金中的主相几乎已完全凝固。 另一方面,晶界具有大量的稀土元素并且具有较低的熔融温度,因此,当诸如Dy的元素RH扩散时,至少一部分晶界仍处于液相。 积极地从晶界进入主相。 \n\n [0053]  图。  4  图1示意性地示出了固化合金的微晶结构。 主相为R 2 T 14 Q相,晶界为包含高浓度的稀土元素R的富R相。 根据本发明,按照实线所示的温度曲线冷却合金。  图。  1个 。 这就是为什么在图1所示的晶界中更多地包含其中Nd等元素RL的微晶结构的原因。  图。  4  但是可以获得诸如Dy之类的元素R H在主相中具有较高的浓度。 结果,可以提高矫顽力。 \n\n [0054] 通过执行本发明的温度保持处理步骤S2,R-T-B基稀土磁体材料合金的结晶相不会过度生长,并且Dy从富R相扩散到主相中,如图2所示。  图。  4 。 因此,在主相的外边缘周围形成了Dy浓缩层。 可以看出,通过执行温度保持步骤S2,通过快速冷却过程制成的RTB基稀土磁体材料合金的主相晶粒可以保持尖锐的粒度分布,而 通过Dy浓缩层可以有效地提高矫顽力。 \n\n [0055] 应该注意的是,Dy浓缩层不必在主相的整个外边缘周围形成,而可以仅存在于部分外边缘中。 即使在后一种情况下,仍可以有效地提高矫顽力。 \n\n [0056] 然后将通过这种方式获得的固化合金通过粉碎过程粉碎成粉末。 如果在粉碎处理之前进行氢脱氢处理,则晶界部分倾向于暴露在粉末的表面上。 因此,优选在惰性气体中进行粉碎处理,并且优选将惰性气体中的氧浓度控制为1体积%以下。 原因是,如果大气中的氧气浓度超过1体积%,则在细粉碎过程中粉末颗粒将被氧化并且一部分稀土元素将被消耗以产生氧化物。 如果在原料合金粉末中产生许多对磁性无贡献的稀土氧化物以制成稀土磁体,则以R 2 T 14 Q基晶相为主相的百分比将会降低,且 所得磁体的性能将下降。 另外,元素R H的氧化物将更容易在晶界上产生,并且元素R H的浓度将在主相中降低。 这样的精细粉碎过程可以使用喷射磨,磨碎机,球磨机或任何其他粉碎机进行。 例如,在美国专利申请No.09 / 851,423中公开了使用喷射式粉碎机的粉碎方法。 \n\n [0057] 在下文中,将进一步详细描述本发明的优选实施方式。 \n\n [0058] 首先,制备R-T-Q基稀土合金的熔体。 作为稀土元素R,熔融合金包括选自Nd,Pr,Y,La,Ce,Pr,Sm,Eu,Gd,Er,Tm,Yb和Lu以及至少一种的元素RL。 选自Dy,Tb和Ho的至少一种元素RH。 在这种情况下,为了充分有效地提高矫顽力,元素R H与全部稀土元素的原子比(即摩尔比)优选为5%以上。 在一个优选的实施方案中,稀土元素R占整个合金的11at%至17at%,并且有助于提高矫顽力的元素R H占整个稀土元素R的至少10at%。 \n\n [0059] 过渡金属元素T包括Fe作为主要成分(占总T的至少50at%),但是可以进一步包括其他过渡金属元素,例如Co和/或Ni作为余量。 过渡金属元素T占整个合金的75at%至84at%。 \n\n [0060] 元素Q包含B作为主要成分,但可以进一步包含选自由C,N,Al,Si和P组成的组中的至少一种元素,其可以替代四方Nd 2 Fe 14 B晶体中的B(硼)。 结构体。 元素Q占整个合金的5原子%至8原子%。 \n\n [0061] 除了这些主要元素之外,合金还可以包括至少一种选自Ti,V,Cr,Mn,Ni,Cu,Zn,Ga,Zr,Nb,Mo,In,Sn,  Hf,Ta,W和Pb。 \n\n [0062] 具有这种组成的材料合金的熔体与带式连铸机的冷却辊的表面接触并迅速冷却并固化。 在该优选实施例中,具有诸如图1所示的构造的机器。  图。  3  可用作连铸机。 \n\n [0063] 机器如图  图。  3  包括:坩埚1,其布置成限定任何倾斜角并保留熔融合金;中间包2,其从坩埚1接收熔融合金;冷却辊4,其快速冷却由中间包2供给的熔融合金 ,同时向上移动它。 \n\n [0064] 该机器还包括:滚筒容器6,用于使已离开旋转冷却辊4的表面的凝固合金薄带5经受温度保持处理步骤;以及马达7,用于旋转和驱动该滚筒容器6。 鼓容器6的至少内壁部分的温度例如通过加热器(未示出)保持在700℃至900℃的范围内。 通过调节该加热器的输出,可以将凝固的合金5保持在不同的温度。 如果在温度保持过程步骤中驱动电动机7,则凝固合金5的薄带将被分成长度约为几厘米的铸造薄片。 然而,那些浇铸的薄片将在鼓形容器6中被搅拌,并因此基本上均匀地经受温度保持过程。 当温度保持处理步骤完成时,从鼓形容器6中收集凝固合金5的那些铸造薄片。此后,通过自然冷却薄片进一步降低薄片的温度。 一旦从桶容器6中收集,则优选以尽可能高的速率冷却固化的合金5。 这就是为什么冷却气体(例如氮气)可以吹向合金的原因。 \n\n [0065] 如果通过使用如图所示的机器来实施本发明  图。  3 当熔融合金与冷却辊5的表面接触时,第一冷却工艺步骤开始,并且一直持续到合金离开冷却辊5的表面为止。第一冷却工艺步骤可以进行约0.1秒至约10秒。  。 在第一个冷却过程步骤中,将冷却速率控制在10 2 [0066] 在第一冷却处理步骤之后,在仍将固化合金5存储在鼓形容器6中的同时执行温度保持处理步骤。  图。  1个 在时间t 1,第一冷却处理步骤一结束,就开始温度保持处理步骤。 但是,如果机器如  图。  3  使用温度保持处理步骤的开始被延迟了离开冷却辊5的凝固合金5到达滚筒容器6所花费的时间。如果温度保持处理步骤的开始被延迟了 这样,凝固合金5的温度同时下降。 但是,除非温度降至低于700°C,否则不会有问题。 例如,如果温度设定为800℃,则刚好在温度保持处理步骤开始之前,凝固合金5的温度可能已降低至750℃。 在那种情况下,至少在保温步骤的初始阶段,通过鼓形容器​​6将凝固的合金5加热到750℃至800℃之间。即使这样,诸如Dy的元素RH仍会扩散。 从晶界到主相,还可以有效地提高矫顽力。 另外,由于将温度保持处理步骤进行短至600秒或更短,因此在该处理步骤中晶粒不会过度生长。 \n\n [0067] 可以看出,根据本发明,“温度保持过程”不仅是指将凝固的合金的温度精确地保持在恒定水平的过程,而且是指使合金通过温度范围的过程。 与自然冷却相比,在冷却过程中在预定的时间段内有意降低冷却速率,可以在更长的时间内将温度从700°C降至900°C。 \n\n [0068] 一般而言,例如,通过带材铸造法制造的凝固合金,在离开冷却辊后,通过暴露于空气中或与输送部件接触而散热。 这就是为什么执行本发明的温度保持处理步骤的原因,热量需要逆着这种自然冷却(或散热)传递到固化合金。 从这个意义上讲,本发明的“保持温度的步骤”是在冷却过程中进行的一种热处理过程。 \n\n [0069] 另外,即使试图使凝固合金的温度保持恒定,实际上也不可避免地会发生一些温度变化。 例如,即使温度以10℃/ min或更低的降温速率缓慢下降或以1℃/ min或更低的增温速率非常轻微地升高,仍可以认为合金的温度 与正常的冷却过程相比,基本保持恒定。  图。  2  示意性地示出了在温度保持处理步骤S2中合金温度逐渐降低的示例(如实线所示)和温度有时升高和有时降低(如虚线所示)的示例。 在任何这些情况下,诸如Ry的元素R H也可以从晶界扩散到主相中,并且矫顽力也可以增加。 \n\n [0070] 如果维持温度的处理步骤时间过长,则晶粒可能过度生长,矫顽力可能降低。 因此,优选将温度保持至少15秒但不超过600秒。 \n\n [0071] 由于这样的温度保持处理步骤,选自Dy,Tb和Ho的至少一种元素R H在主相中具有增加的浓度。 如上所述,保持合金的温度可以在700℃至900℃的范围内任意选择,但是优选设定为约700℃至约800℃。 \n\n [0072] 在温度保持工序结束后进行的第二冷却工序中,将固化的合金以10℃/ s以上的冷却速度冷却至常温(即室温附近)。 通过以相对较高的冷却速率冷却合金,可以充分减少晶粒的生长。 由于暴露于大气中的气体,第二冷却工艺步骤有时可以通过自然冷却来实现。 或者,可以通过向凝固的合金吹冷气或使合金与某些冷却构件接触来有意地执行冷却过程。 \n\n [0073] 这一系列工艺步骤优选在真空或惰性气体气氛中进行。 在所示的机器中  图。  3 首先,在与空气隔绝的腔室中进行第一冷却处理步骤,温度保持处理步骤和第二冷却处理步骤。 然而,在第二冷却工艺步骤的后半部分中,凝固合金5的温度将降低到相当低的水平。 因此,合金的质量不会因氧化而降低,例如即使暴露在空气中也不会降低。 因此,可以在腔室外进行第二冷却工序的一部分或全部。 \n\n [0074] 应该注意的是,温度保持处理步骤不必通过使用如图1所示的机器来进行。  图。  3  但也可以通过任何其他方法执行。 例如,可以在输送离开带钢连铸机的冷却辊的快速冷却的合金的同时进行温度保持处理步骤。 在那种情况下,加热部分(即,加热器)可以布置在输送路径上,以减少已经离开冷却辊并被输送的凝固合金的自然散热。 \n\n [0075] 在以这种方式制成的快速冷却的合金(即带铸合金)中,R 2 T 14 Q相,其中R为稀土元素,T为过渡金属元素,Q为至少一种元素 从B,C,N,Al,Si和P组成的组中选择的一种已作为主要相产生。  R 2 T 14 Q相(是主相晶粒)是树枝状晶体,其平均短轴尺寸为3 µm至10 µm,长轴尺寸为10 µm至300 µm。 \n\n [0076] 在刚经过第二冷却工艺步骤的凝固合金(即初生合金)中,作为主要相的R 2 T 14 Q相中的元素RH浓度高于其他相(例如 作为晶界相)。 也就是说,元素R H已经成功地集中在主相中。 \n\n [0077] 这意味着通过执行温度保持处理步骤,当完成第一冷却处理步骤时存在于晶界相部分中的元素RH已移入R 2 T 14 Q相作为主相并具有增加的浓度。 那里。 以这种方式,最终可以获得其中R 2 T 14 Q相中的元素R H的浓度高于其他相中的固化合金。 在快速冷却的合金中,即使在保持温度的工艺步骤之后,树枝状间隙也几乎没有改变。 因此,R 2 T 14 Q相的短轴尺寸几乎没有变化,仍然在3μm至10μm的范围内。 即使树枝状晶体已经生长,它们的生长速度在短轴方向上也将是1-2μm。 \n\n [0078] 根据本发明,不采用通过再次加热已经冷却到室温左右的快速冷却的合金来扩散Dy的方法。 因此,可以最小化由这种加热过程引起的晶粒的过度生长,并且可以有效地增强通过稀土元素例如Dy获得的矫顽力增加的效果。 \n\n [0079] 接下来,在通过如上所述的氢爆破工艺使凝固的合金破损之后,使用诸如喷射磨机的粉碎机将合金粉碎成细粉。 这样获得的干粉可以具有例如3.0μm至4.0μm的平均粒径(FSSS粒径)。 喷射式粉碎机利用已引入预定量的氧气的惰性气体的高速气流将原料合金粉碎。 惰性气体中的氧浓度优选控制为不超过1体积%,更优选为0.1体积%以下。 \n\n [0080] 根据本发明,以这种方式在粉碎过程中控制大气中的氧气浓度,以防止曾经从晶界相移入主相的元素RH移动或沉淀成金属。 晶界部分再次由于氧化。 如果粉末中包含大量氧气,则重稀土元素R H(例如Dy,Tb或Ho)会键合到氧气上,并经常产生更化学稳定的氧化物。 在本发明采用的合金结构中,氧在晶界相中比在主相中更充分地分布。 因此,主相中的元素R H再次扩散到晶界相中,并在那里被消耗而生成氧化物。 一旦元素R H以这种方式脱离主相,矫顽力将不再足够增加。 因此,优选在粉碎工序和后述的烧结工序中适当地使粉末的氧化最小化。 \n\n [0081] 接下来,通过在对准磁场下使用压粉机将粉末压制成所需的形状。 然后,在惰性气体气氛中以10 -4的压力烧结由此获得的粉末压块。 [0082] 烧结温度优选设定为防止在主要的烧结相中的Dy在长时间的烧结过程中扩散。 更具体地,优选将温度从产生液相的800℃升高到烧结密度达到真实密度的温度的速率设置在5℃/ min至50℃的范围内。  /分钟。 然后,通过保持该时间量的温度,可以防止在已粉碎成粉末的凝固合金的主相中具有增加的浓度的Dy再次扩散到富R相中。 \n\n [0083] 通过氢爆破工艺粗粉碎成粉末的快速冷却的合金包括氢。 因此,为了从合金粉末中除去氢,可以在进行烧结过程之前将快速冷却的合金在800℃至1,000℃(例如900℃)的温度下保持30分钟至6小时。 如果进行这样的脱氢处理,则在脱氢处理结束后,以升温速度进行加热处理。 \n\n [0084] 如果在通过进行800℃〜1000℃的范围内的脱氢处理后的烧结目的来提高温度,则优选将升温速度设定为5℃/ min的范围。 至50°C / min。 然后,可以减少由于烧结过程引起的晶粒生长。 结果,还可以最小化通过温度保持处理步骤而增加的矫顽力的降低。 \n\n [0085] 任选地,在烧结过程之后,可以在400℃至900℃的温度下进行再加热过程。 通过进行这样的再加热处理,可以如预期那样控制晶界相,并且可以进一步提高矫顽力。 \n\n [实施例和比较例] \n\n [0086] 首先,合金熔体,其组成包括作为余量的Nd为22质量%,Pr为6.0质量%,Dy为3.5质量%,Co为0.9质量%,B和Fe为1.0质量%(非常小)。 量的不可避免地包含的杂质)通过单辊铸带法快速冷却,从而制得具有上述组成的凝固合金。 \n\n [0087] 熔体在经受快速冷却过程之前的温度为1,350°C,而辊的表面圆周速度为70 m / min。 在第一个冷却工艺步骤中,通过使用带钢连铸机(例如图2所示)将凝固合金的温度降至约700℃至约800℃。  图。  3 。 接下来,使用图1所示的鼓容器6对合金进行温度保持处理步骤。  图。  3  在下表1中指定的条件下,然后进行第二个冷却过程,使其冷却至室温。 \n\n \n\n \n\n \n\n \n\n \n\n \n\n [表格1]    样品编号 保温过程  1(示例) 800°C×40秒  2(示例) 700°C×120秒  3(示例) 700°C×240秒  4(比较示例) 不适用   \n\n [0088] 代表比较例的4号样品没有经过温度保持处理步骤,而是单调连续冷却至室温。 \n\n [0089] 使用电子探针显微分析仪(EPMA)对以此方式获得的这些1-4号凝固合金样品进行线分析,该电子探针显微分析仪旨在通过向电子束照射物体来检测特征X射线。 结果,本发明人证实,在主相中Dy的浓度高于在晶界相中的Dy,并且在晶界相中的Nd和Pr的浓度高于在主相中的Nd和Pr的浓度。 合金的磁性能也用BH示踪剂测量。 结果示于下表2: \n\n \n\n \n\n \n\n \n\n \n\n \n\n 表2    样品编号 硼(kG) H cJ(kOe) (BH)最大值(MGOe)  1(示例)13.120.541.0  2(示例)13.120.141.0  3(示例)13.120.341.0  4(比较示例)13.119.541.0   \n\n [0090] 从表2可以看出,样品1至3的矫顽力H cJ为20.1kOe至20.5kOe,而样品4的矫顽力H cJ为19.5kOe。 以这种方式,本发明人证实了本发明的具体实施例的矫顽力H cJ比比较例的矫顽力H cJ最多高5%。 \n\n [0091] 在本发明的这些实施例中,如上所述,将细粉碎过程中的氧气浓度控制在适当的范围内。 因此,可以使Dy向晶界的扩散最小化,并且在烧结过程中可以提高矫顽力。 \n\n  工业适用性  \n\n [0092] 根据本发明,为了提高矫顽力而添加的元素R H可以通过在冷却熔融合金的同时进行温度保持工序来提高主相中的浓度。 因此,可以有效地使用这样的稀有且昂贵的重稀土元素来提高矫顽力,而无需单独进行任何特殊的热处理工艺。');
INSERT INTO `os_patent_instruction_text` VALUES (13055, 22884, '明 細 書\n\n希土類磁石用原料合金および粉末ならびに焼結磁石の製造方法 技術分野\n\n【0001】 本発明は、希土類磁石用原料合金、および、その粉末の製造方法に関し、また、 希土類磁石用原料合金粉末を用いて焼結磁石を製造する方法に関して!/ヽる。\n\n背景技術\n\n【0002】 ネオジム \'鉄\'硼素系磁石は、種々の磁石の中で最も高い磁気エネルギー積を示し 、価格も比較的安いため、 HDD、 MRI、およびモータなどの重要部品として各種電 子機器へ積極的に採用されて ヽる。\n\n【0003】 ネオジム \'鉄\'硼素系磁石は、 Nd Fe B型結晶を主相とする磁石である力 より\n\n2 14 一 般的に「R— T— B系磁石」と称される場合がある。ここで、 Rは希土類元素、 Tは Feを 主とする Niや Coで代表される遷移金属元素、 Bは硼素である。ただし、 Bの一部は、 C、 N、 Al、 Si、および/または Pなどの元素によって置換され得るため、本明細書で は、 B、 C、 N、 Al、 Si、および P力もなる群力も選択された少なくとも 1種の元素を「Q」 と表記し、「ネオジム，鉄 ·硼素系磁石」と称されている希土類磁石を広く「R— T— Q 系希土類磁石」と記載する。 R—T—Q系希土類磁石では、 R T Q結晶粒が主相を\n\n2 14\n\n構成している。\n\n【0004】 R— T Q系希土類磁石用原料合金の粉末は、当該原料合金の粗粉砕を行う第 1 粉砕工程と、原料合金の微粉砕を行う第 2粉砕工程とを含む方法によって作製され ることが多い。例えば、第 1粉砕工程では水素脆化処理によって原料合金を数百 m以下のサイズに粗く粉砕した後、第 2粉砕工程では、粗粉砕された原料合金 (粗粉 砕粉)をジェットミル粉砕装置などによって平均粒径が数 m程度のサイズに細かく 粉砕する。\n\n【0005】 磁石用原料合金自体の作製方法には大きく分けて 2種類ある。第 1の方法は、所定 組成の合金溶湯を铸型に入れ、比較的ゆっくりと冷却するインゴット铸造法である。 第 2の方法は、所定組成の合金溶湯を単ロール、双ロール、回転ディスク、または回 転円筒铸型等に接触させて急速に冷却し、合金溶湯からインゴット合金よりも薄い凝\n\n固合金を作製するストリップキャスト法や遠心铸造法に代表される急冷法である。\n\n【0006】 このような急冷法による場合、合金溶湯の冷却速度は、例えば 10lQCZ秒以上 104°CZ秒以下の範囲にある。そして、急冷法によって作製された急冷合金の厚さは、 0 . 03mm以上 10mm以下の範囲にある。合金溶湯は冷却ロールの接触した面（ロー ル接触面)から凝固し、ロール接触面から厚さ方向に結晶が柱状 (針状）に成長して ゆく。その結果、上記急冷合金は、短軸方向サイズが 3 m以上 10 m以下で長軸 方向サイズが 10 m以上 300 m以下の R T Q結晶相と、 R T Q結晶相の粒界に\n\n2 14 2 14\n\n分散して存在する Rリッチ相（希土類元素 Rの濃度が相対的に高い相）とを含有する 微細結晶組織を持つに 、たる。 Rリッチ相は希土類元素 Rの濃度が比較的に高 、非 磁性相であり、その厚さ（粒界の幅に相当する）は 10 m以下である。\n\n【0007】 急冷合金は、従来のインゴット铸造法 (铸型铸造法）によって作製された合金 (イン ゴット合金）に比較して、相対的に短時間で冷却されているため、組織が微細化され 、結晶粒径が小さい。また、結晶粒が微細に分散して粒界の面積が広ぐ Rリッチ相 は粒界内を薄く広がっているため、 Rリッチ相の分散性にも優れ、焼結性が向上する 。このため、特性の優れた R—T—Q系希土類焼結磁石を製造する場合には、その 原料として、急冷合金が使用されるようになってきて!/ヽる。\n\n【0008】 希土類合金 (特に急冷合金）に水素ガスを ヽつたん吸蔵させ、 、わゆる水素粉砕処 理によって粗粉砕を行う場合 (本明細書では、このような粉砕方法を「水素脆ィ匕処理」 と称する）、粒界に位置する Rリッチ相が水素と反応し、膨張するため、 Rリッチ相の部 分 (粒界部分)から割れる傾向にある。そのため、希土類合金を水素粉砕すること〖こ よって得られた粉末の粒子表面には Rリッチ相が現われやすくなる。また、急冷合金 の場合は、 Rリッチ相が微細化されており、その分散性も高いため、水素粉砕粉の表 面には Rリッチ相が特に露出しやすい。\n\n【0009】 上記の水素脆ィ匕処理による粉砕方法は、例えば米国特許出願 097503,738に開 示されている。\n\n【0010】 このような R— T Q系希土類磁石の保磁力を高めるため、希土類 Rの一部を Dy、 Tb、および Zまたは Hoで置換する技術が知られている。なお、本明細書では、 Dy、 Tb、および Hoからなる群カゝら選択された少なくとも 1種の元素を Rと表記することす\n\nる。\n\n【0011】 しカゝしながら、 R—T—Q系希土類磁石用原料合金に添加した元素 Rは、合金溶\n\nH\n\n湯の急冷後、主相である R T Q相にだけではなぐ粒界相にもほぼ一様に存在する\n\n2 14\n\nことになる。このような粒界相に存在する元素 R\n\nHは、保磁力の向上に寄与しないとい う問題がある。\n\n【0012】 また、粒界に元素 Rが多く存在することにより焼結性が低下するとう問題もある。こ\n\nH\n\nの問題は、原料合金に占める元素 Rの割合が 1. 5原子％以上の場合に大きくなり、\n\nH\n\nこの割合が 2. 0原子％以上になると顕著なものとなる。\n\n【0013】 また、凝固合金の粒界相部分は、水素脆化処理および微粉砕工程によって超微粉\n\n(粒径： 1 μ m以下）となりやすぐ力りに微粉末にならな力つたとしても、露出した粉末 表面を構成しやすい。超微粉は、酸化や発火の問題を引き起こしゃすぐまた、焼結 にも悪影響を与えるため、粉砕工程中に除去される。粒径 1 μ m以上の粉末粒子の 表面に露出している希土類は酸ィ匕されやすぐまた、元素 Rは Ndや Prよりも酸ィ匕さ\n\nH\n\nれやすいため、合金の粒界相中に存在した元素 Rは、安定な酸ィ匕物を形成してしま\n\nH\n\nい、主相の希土類元素 Rと置換することなぐ粒界相に偏祈した状態を維持しやすい 【0014】 以上のことから、急冷合金中の元素 Rのうち、その粒界相に存在する部分は保磁\n\nH\n\n力向上のために有効利用されないという問題がある。元素 Rは、希少な元素であり、\n\nH\n\n価格も高いため、資源の有効利用や製造コストの低下という観点から、上述のような 無駄を排除することが強く求められている。\n\n【0015】 このような問題を解決するため、特許文献 1は、ストリップキャスト法で作製した急冷 凝固合金に対して、 400〜800°Cの温度範囲で 5分〜 12時間保持する熱処理工程 を施すことにより、粒界に存在する重希土類を主相に濃縮することを開示している。\n\n【0016】 なお、このように Dyを主相に濃縮することを目的とはしていないが、急冷合金の組 織を調整する目的で、合金溶湯の急冷プロセスを制御することが特許文献 2や特許 文献 3に開示されている。\n\n【0017】 特許文献 2は、急冷合金の組織を微細化するため、合金溶湯を急冷する過程を一 次冷却と二次冷却の 2つの段階に区分し、各段階における冷却速度を特定範囲に\n\n制御することを開示して 、る。\n\n【0018】 特許文献 3は、冷却ロールによって合金溶湯を急冷することによって薄帯状の急冷 凝固合金を作製した直後に、その急冷凝固合金を収容容器内に収め、急冷凝固合 金の温度を制御することを開示している。特許文献 3の開示する方法では、急冷途中 において合金温度が 900°Cから 600°Cに低下するときの平均冷却速度を 10〜300 °CZ分に制御することにより、 Rリッチ相の分布を調節している。\n\n特許文献 1：特願 2003 - 507836号\n\n特許文献 2：特開平 8 - 269643号公報\n\n特許文献 3：特開 2002— 266006号公報\n\n発明の開示\n\n発明が解決しょうとする課題\n\n【0019】 しかし、上記の従来技術には、以下に説明する問題がある。\n\n【0020】 特許文献 1の方法では、急冷合金を一旦元素の拡散が生じない温度 (例えば室温 )まで冷却した後に、急冷装置とは別の炉で急冷合金を加熱することにより、前述した 400〜800°Cの熱処理行っている。このように急冷工程が完了した後に熱処理を行 なうには、熱処理温度まで急冷合金を加熱するプロセスが必要になり、製造作業が 煩雑となるだけでなぐ結晶粒が粗大化して保磁力が低下するという不都合がある。\n\n【0021】 特許文献 2や特許文献 3に開示されている方法では、急冷合金の組織を微細化し たり、 Rリッチ相を分散化することは達成できても、 Dyなどの特定希土類元素を粒界 力も主相に拡散させることはできない。\n\n【0022】 本発明は力かる諸点に鑑みてなされたものであり、その主な目的は、製造工程を煩 雑ィ匕することなぐ Dy、 Tb、および Hoを主相に濃縮して保磁力を効果的に向上させ ることのできる R—Fe— Q系希土類磁石の製造方法を提供することにある。\n\n課題を解決するための手段\n\n【0023】 本発明による R—T—Q系希土類磁石用原料合金の製造方法は、 R—T—Q系希 土類合金 (Rは希土類元素、 Tは遷移金属元素、 Qは B、 C、 N、 Al、 Si、および Pから なる群力 選択された少なくとも 1種の元素）であって、希土類元素 Rとして、 Nd、 Pr 、 Y、 La、 Ce、 Pr、 Sm、 Eu、 Gd、 Er、 Tm、 Yb、および Luからなる群から選択された\n\n少なくとも 1種の元素 Rと、 Dy、 Tb、および Hoからなる群カゝら選択された少なくとも 1 し\n\n種の元素 Rとを含有する合金の溶湯を用意する工程と、前記合金の溶湯を 700\n\nH °C 以上 1000°C以下の温度まで急冷することによって凝固合金を形成する第 1冷却ェ 程と、前記凝固合金を、 700°C以上 900°C以下の温度範囲に含まれる温度で 15秒 以上 600秒以下のあ ヽだ保持する温度保持工程と、前記凝固合金を 400°C以下の 温度まで冷却する第 2冷却工程とを包含する。\n\n【0024】 好ま ヽ実施形態にお!ヽて、前記温度保持工程は、前記凝固合金の温度を前記 温度範囲に含まれる前記温度に保持する際、前記凝固合金の温度を 10°CZ分以 下の冷却速度で低下させる工程および Zまたは前記凝固合金の温度を cz分以 下の昇温速度で上昇させる工程を含む。\n\n【0025】 好ましい実施形態において、前記第 1冷却工程は、前記合金の溶湯の温度を 102°CZ秒以上 104°CZ秒以下の冷却速度で低下させる工程を含む。\n\n【0026】 好ま ヽ実施形態にお!ヽて、前記第 2冷却工程は、前記凝固合金の温度を 10°C Z秒以上の冷却速度で低下させる工程を含む。\n\n【0027】 好ま 、実施形態にぉ 、て、前記元素 Rは、含有希土類元素全体の 5原子％以\n\nH\n\n上を占める。\n\n【0028】 好ましい実施形態において、前記第 2冷却工程直後における前記凝固合金中の R\n\n2\n\nT Q\n\n14 相に含まれる元素 R\n\nHの原子数比率が希土類元素全体に占める元素 R\n\nHの原子 数比率よりも大きい。\n\n【0029】 好ましい実施形態において、前記第 2冷却工程直後における前記凝固合金中の R\n\n2\n\nT Q相に含まれる元素 Rの原子数比率は、含有希土類元素全体に占める元素 R\n\n14 H H の原子数比率の 1. 1倍よりも大きい。\n\n【0030】 好ましい実施形態において、希土類元素 Rは全体の 11原子％以上 17原子％以下\n\n、遷移金属元素 Tは全体の 75原子％以上 84原子％以下、元素 Qは全体の 5原子％ 以上 8原子％以下である。\n\n【0031】 好ましい実施形態において、前記合金は、 Ti、 V、 Cr、 Mn、 Ni、 Cu、 Zn、 Ga、 Zr\n\n、 Nb、 Mo、 In、 Sn、 Hf、 Ta、 W、および Pbからなる群から選択された少なくとも 1種 の添加元素 Mを含有する。\n\n【0032】 好ましい実施形態において、前記第 1冷却工程は、回転する冷却ロールによって 前記合金の溶湯を冷却する工程を含む。\n\n【0033】 好まし 、実施形態にぉ 、て、前記温度保持工程は、 700°C以上 900°C以下の温 度に加熱された部材で前記急冷凝固合金に熱を供給する工程を含む。\n\n【0034】 本発明による R— T Q系希土類磁石用原料合金粉末の製造方法は、上記いず れかの製造方法によって製造された R— T Q系希土類磁石用原料合金を水素脆 化法によって脆化させる工程と、前記脆化された R—T—Q系希土類磁石用原料合 金を粉砕する工程とを包含する。\n\n【0035】 好ま 、実施形態にぉ ヽて、前記 R—T—Q系希土類磁石を粉砕する工程では、 不活性ガスの高速気流を用いて前記 R—T—Q系希土類磁石の微粉砕を実行する。\n\n【0036】 本発明による焼結磁石の製造方法は、上記!/、ずれかの製造方法によって製造され た R— T Q系希土類磁石用原料合金粉末を用意し、前記粉末の成形体を作製す る工程と、前記成形体を焼結する工程とを包含する。\n\n【0037】 好ま 、実施形態にぉ 、て、前記成形体を焼結する工程は、脱水素工程のあと、 液相が形成される温度（800°C)から焼結密度が真密度に達する温度までの加熱を 行うとき、昇温速度を 5°CZmim以上に設定する。\n\n【0038】 本発明の R— T B系希土類磁石用原料合金は、上記の製造方法によって製造さ れた R—T—B系希土類磁石用原料合金であって、主相と Rリッチ相とを含有し、前 記 Rリッチ相のうち前記主相と前記 Rリッチ相との界面に接する部分における元素 R\n\nH\n\nの濃度は、前記主相のうち前記界面に接する部分における元素 R\n\nHの濃度よりも低下 しており、前記主相を構成する結晶粒の短軸方向サイズが 3 m以上 10 m以下の 範囲である。\n\n発明の効果\n\n【0039】 本発明によれば、合金溶湯を冷却して凝固合金を作製する過程にお!ヽて、冷却途 中の凝固合金を 700°C以上 900°C以下の温度範囲に保持する工程を行なうことによ り、 Dyなどの重希土類を粒界から主相へ拡散させることができる。本発明では、冷却 工程が完了した後、室温レベルに低下した凝固合金を加熱して熱処理を行なう必要 が無いため、粒成長が生じにくぐ微細な組織を有する合金を得ることができ、 Dyな\n\nどの重希土類元素による保磁力増大の効果を充分に発揮させることができる。 図面の簡単な説明\n\n【0040】 [図 1]急冷工程中における合金の温度と経過時間との関係を模式的に示すグラフで ある。\n\n[図 2]本発明の或る実施形態の急冷工程中における合金の温度と経過時間との関係 を模式的に示すグラフである。\n\n[図 3]本発明の実施に好適に使用可能な装置の構成を示す装置である。\n\n[図 4]凝固合金の組織構造を模式的に示す図である。\n\n符号の説明\n\n【0041】 1 坩堝\n\n2 タンデッシュ\n\n4 冷却ロール\n\n5 凝固合金\n\n6 ドラム状容器 (温度保持手段）\n\n7 モータ\n\n発明を実施するための最良の形態\n\n【0042】 本発明では、まず、 R—T—Q系希土類合金 (Rは希土類元素、 Tは遷移金属元素 、 Qは B、 C、 N、 Al、 Si、および Pからなる群力も選択された少なくとも 1種の元素）の 溶湯を用意する。この R— T— Q系希土類合金は、希土類元素 Rとして、 Nd、 Pr、 Y 、 La、 Ce、 Pr、 Sm、 Eu、 Gd、 Er、 Tm、 Yb、および Luからなる群から選択された少 なくとも 1種の元素 Rと、 Dy、 Tb、および Hoからなる群力も選択された少なくとも 1種 し\n\nの元素 Rとを含有している。\n\nH\n\n【0043】 次に、上記組成の合金溶湯を急冷して凝固合金を作製するが、本発明者は、この ような合金溶湯を急冷して凝固合金を作製する過程において、以下に詳細を説明す る「温度保持工程」を実行することにより、凝固合金の粒界相中に位置する元素 Rを\n\nH\n\n主相へ移動させ、主相に濃縮できることを見出し、本発明を想到するに到った。\n\n【0044】 以下、図 1を参照しながら、本発明で実施する温度保持工程を説明する。\n\n【0045】 図 1は、急冷工程中における合金の温度と経過時間との関係を模式的に示すダラ\n\nフである。グラフの縦軸は合金温度であり、横軸は急冷開始からの経過時間である。\n\n【0046】 図 1に示す例では、時刻 tから時刻 tまでの期間、合金溶湯の第 1冷却工程 S1を\n\n0 1\n\n行い、時刻 tから時刻 tまでの期間、温度保持工程 S2を行なう。その後、時刻 tから\n\n1 2 2 時刻 tまで第 2冷却工程 S3を実行する。\n\n3\n\n【0047】 まず、合金溶湯を回転する冷却ロールの外周面に接触させ、薄帯状の凝固合金を 作製する通常のストリップキャスト法を用いて凝固合金を作製する場合を考える。この 場合、合金溶湯は時刻 tで冷却ロールの表面に接触し、冷却ロールによる抜熱が開\n\n0\n\n始される。その後、合金溶湯は、回転する冷却ロール上を移動しながら更に急冷され 、時刻 tにおいて凝固した状態で冷却ロールの表面力も離れることになる。冷却ロー\n\n1\n\nルから離れた合金の温度は、通常 800〜1000°C程度の範囲にある。従来のストリツ プキャスト法による場合、冷却ロールを離れた凝固合金の温度は、空冷などの二次 冷却により低下し、やがて常温 (例えば室温）に達する。図 1のグラフでは、破線で示 す温度変化力 通常のストリップキャスト法による冷却を行なった場合に得られる時刻 t以降の温度変化を示している。\n\n1\n\n【0048】 このような従来の冷却工程に対して、本発明では、時刻 tから時刻 tまでの間にお\n\n1 2\n\nいて、温度保持工程を行なう点に特徴を有している。図 1のグラフでは、本発明による 合金温度の変化を実線で示している。図 1からゎカゝるように、温度保持工程 S2が終 了する時刻 t以降に行なう第 2冷却工程 S3では、従来例の破線で示す温度変化と\n\n2\n\n同様に、自然な冷却により、例えば室温程度まで温度を低下させている。\n\n【0049】 本発明で行なう温度保持工程 S2は、合金を 700°C以上 900°C以下の温度範囲に 含まれる所定温度で 15秒以上 600秒以下の間、保持する。温度保持工程 S2を開始 する時点において、急冷合金中の粒界には、 Dy、 Tb、および Hoなどの元素 Rは粒\n\nH\n\n界または主相中に略均等に分布していると考えられる。しかし、温度保持工程 S2を 行なう間に、粒界に存在していた Dyなどの元素 Rが主相に拡散する一方、主相から\n\nH\n\nは元素 Rが粒界に拡散する現象が生じる。 700°C以上 900°C以下の保持温度にお し\n\nいては、凝固合金中の主相は略完全に固体ィ匕しているが、粒界は希土類成分が多く 融点が低いため、少なくとも一部は液相化している。粒界の一部が液相化した状態 にあるとき、粒界から Dyなどの元素 Rが主相へ活発に拡散すると考えられる。\n\n【0050】 図 4は、凝固合金の組織構造を模式的に示す図である。主相は R T Q相から構成\n\n2 14\n\nされ、粒界は希土類元素 Rが高濃度に含まれる Rリッチ相から構成されている。本発 明によれば、図 1の実線で示す温度プロファイルに従うように合金を冷却するため、 図 4に示す粒界には Ndなどの元素 Rが相対的に多くなる代わりに、 Dyなどの元素 R し\n\nHが主相に濃縮した組織構造が得られ、その結果、保磁力を向上させることが可能に なる。\n\n【0051】 本発明の温度保持工程 S2を行うことにより、図 4に示すように R—T—B系希土類 磁石用原料合金の結晶相が粗大化せず、 Rリッチ相から主相に Dyが拡散される。こ うして、主相外郭部に Dyが濃縮された層が形成される。このように、温度保持工程 S 2を行なうことにより、急冷工程によって作製される R—T—B系希土類磁石用原料合 金における主相結晶粒の粒度分布が急峻 (シャープ)なものに維持したまま、 Dy濃 縮層による保磁力向上効果を得ることができる。\n\n【0052】 なお、 Dyが濃縮された層は、主相外郭部の全面に形成される必要は無ぐ外殻部 の一部に形成されて ヽてもよ ヽ。 Dyが濃縮された層が主相外殻部の一部に形成さ れた場合でも、保磁力向上効果が得られる。\n\n【0053】 このようにして得られた凝固合金は、その後、粉砕処理を受けて粉末化される。粉 砕工程の前に水素脆ィ匕処理を行う場合、粉末表面に粒界相部分が露出しやすいた め、粉砕工程を不活性ガス中で行い、し力も、不活性ガス中の酸素濃度を 1体積％ 以下に調節することが好ましい。雰囲気ガス中の酸素濃度が 1体積％を超えて高くな りすぎると、微粉砕工程中に粉末粒子が酸化され、希土類元素の一部が酸化物の生 成に消費されてしまう。希土類磁石用原料合金粉末中において磁性に寄与しない希 土類酸ィ匕物が多く生成されると、主相である R T Q系結晶相の存在比率が低下する\n\n2 14\n\nため、磁石特性が劣化することになる。また、粒界で元素 Rの酸化物が生成されや\n\nH\n\nすくなり、主相中の元素 Rの濃度が低下する。このような微粉砕は、ジェットミル、アト\n\nH\n\nライタ、ボールミルなどの粉砕装置を用いて行うことができる。なお、ジェットミルによる 粉砕は、米国出願 09Z851,423に開示されている。\n\n【0054】 以下、本発明の好ましい実施形態をより詳細に説明する。\n\n【0055】 まず、 R— T— Q系希土類合金の溶湯を用意する。希土類元素 Rとして、 Nd、 Pr、\n\nY、 La、 Ce、 Pr、 Sm、 Eu、 Gd、 Er、 Tm、 Yb、および Luからなる群から選択された 少なくとも 1種の元素 Rと、 Dy、 Tb、および Hoからなる群カゝら選択された少なくとも 1 し\n\n種の元素 Rとを含有している。ここで、充分な保磁力向上効果を得るため、希土類元\n\nH\n\n素全体の中に占める元素 Rの原子数比率 (モル比）を 5%以上に設定する。好まし\n\nH\n\nい実施形態において、希土類元素 Rの含有量は、合金全体の 11原子％以上 17原 子％以下であり、保磁力向上に寄与する元素 Rは、希土類元素 R全体の 10原子％\n\nH\n\n以上を占める。\n\n【0056】 遷移金属元素 Tは、 Feを主成分 (T全体の 50原子％以上）とし、その残部は Coお よび Zまたは Niなどの遷移金属元素を含んで 、てもよ 、。遷移金属元素 Tの含有量 は、合金全体の 75原子％以上 84原子％以下である。\n\n【0057】 元素 Qは、 Bを主成分として含み、正方晶の Nd Fe B結晶構造中の B (硼素）と置\n\n2 14\n\n換し得る元素である C、 N、 Al、 Si、および Pからなる群力も選択された少なくとも 1種 を含んでいても良い。元素 Qの含有量は、合金全体の 5原子％以上 8原子％以下で ある。\n\n【0058】 合金には、上記主要元素のほかに、 Ti、 V、 Cr、 Mn、 Ni、 Cu、 Zn、 Ga、 Zr、 Nb、 Mo、 In、 Sn、 Hf、 Ta、 W、および Pbからなる群から選択された少なくとも 1種の添カロ 元素 Mが添加されて!、てもよ!/、。\n\n【0059】 上記組成の原料合金の溶湯を、ストリップキャスト装置の冷却ロールの表面と接触 させることにより、急冷凝固させる。本実施形態のストリップキャスト装置としては、例え ば図 3に示す構成を有する装置を用いることができる。\n\n【0060】 図 3の装置は、傾動可能に指示され、合金溶湯を貯えることができる坩堝 1と、坩堝 1カゝら供給される合金溶湯を受けるタンデッシュ 2と、タンデッシュ 2内の合金溶湯を 引き上げなげながら急冷する冷却ロール 4とを備えている。\n\n【0061】 この装置は、回転する冷却ロール 4の表面力 離れた凝固合金 5の薄帯に対して温 度保持工程を行なうためのドラム状容器 6と、このドラム状容器 6を回転駆動するモー タ 7とを備えている。ドラム状容器 6の少なくとも内壁部分における温度は、不図示の ヒータなどにより、 700°C以上 900°C以下の範囲に保たれている。このヒータの出力 を調節することにより、凝固合金 5の保持温度を変化させることが可能である。温度保\n\n持工程においてモータ 7を回動させると、凝固合金 5の薄帯は例えば長さ数 cm程度 の铸片に割れるが、ドラム状容器 6の中で攪拌されるため、多数の铸片は略均等な 温度保持処理を受けることになる。温度保持工程が終了した後、ドラム状容器 6から 凝固合金 5の铸片を取り出し、その後の自然放冷により、更に温度を低下させる。ドラ ム状容器 6から取り出した後の凝固合金 5に対しては、できる限り速いレートで冷却す ることが好ま U、ため、冷却用のガス (例えば窒素）を吹き付けてもよ 、。\n\n【0062】 図 3に示す装置を用いて本発明を実施する場合、第 1冷却工程は、合金溶湯が冷 却ロール 5の表面と接触した時に開始し、冷却ロール 5の表面力 離れるまで継続す る。第 1冷却工程の期間は例えば 0. 1秒〜 10秒程度である。第 1冷却工程における 冷却速度は、冷却ロールの回転速度 (表面周速度）を適切な範囲（例えば lmZ秒 以上 3mZ秒以下）に調節することにより、冷却速度は 102°CZ秒以上 104°CZ秒以 下の範囲に調節する。第 1冷却工程で凝固合金の温度を低下しすぎると、その後の 温度保持工程を行なうために必要な温度に上昇させるための余分な加熱処理が必 要になるので好ましくない。このため、第 1冷却工程では、合金温度を 700°C以上 10 00°C以下の範囲までに低下させることが望ま U、。\n\n【0063】 第 1冷却工程の後に行なう温度保持工程は、凝固合金 5がドラム状容器 6の内部に 収容されているときに行なわれる。図 1に示す例では、時刻 tで第 1冷却工程が完了\n\n1\n\nした後、直ちに温度保持工程が開始されているが、図 3に示すような装置を用いる場 合は、凝固合金 5が冷却ロール 5から離れて力 ドラム状容器 6の中に移動するまで にかかる時間だけ、温度保持工程の開始時期が遅れる。このように温度保持工程の 開始が遅れると、その間に凝固合金 5の温度が低下することになるが、その温度が 7 00°Cを下回らなければ、問題はない。例えば保持温度を 800°Cに設定している場合 において、温度保持工程開始直前における凝固合金 5の温度が 750°Cに低下して いることが起こり得る。このような場合、温度保持工程の少なくとも初期においては、 凝固合金 5はドラム状容器 6に加熱され、 750°C力も 800°Cに昇温する。このような昇 温が生じたとしても、その間に、 Dyなどの元素 Rは粒界力も主相に拡散するため、\n\nH\n\n保磁力増大の効果を得ることができる。また、温度保持工程は 600秒以下の短い期 間であるため、結晶粒の粗大化は問題にならな 、。\n\n【0064】 このように、本発明における「温度保持工程」とは、凝固合金の温度を厳密に一定レ ベルに保持する場合のみを意味するのではなぐ冷却工程の途中における一定期 間、冷却速度を自然放冷の場合よりも意図的に低下させることにより、 700°C以上 90 0°C以下の温度範囲を通過する時間を長くすることを広く意味するものとする。\n\n【0065】 一般に、ストリップキャスト法などにより凝固合金を作製する場合、冷却ロールから 離れた凝固合金は、大気雰囲気や搬送部材との接触によって抜熱される。このため 、本発明における温度保持工程を行なうには、このような自然な冷却 (抜熱）に反して 熱を凝固合金に供給することが必要になる。この意味で、本発明の「温度保持工程」 は、冷却途中に行なう一種の熱処理工程として機能する。\n\n【0066】 また、凝固合金の温度を一定に保持しょうとしても、現実には多少の温度変化が不 可避である。例えば、 10°CZ分以下の冷却速度で生じる緩やかな冷却や、 cz分 以下の昇温速度で生じる極めて緩やかな昇温が生じていても、通常の冷却工程に 比べれば略一定の温度に保持されていると認められる。図 2は、温度保持工程 S2で 、合金温度が緩やかに低下している例（実線)や、温度が増減している例 (破線)を模 式的に示している。このような場合でも、 Dyなどの元素 R\n\nHを粒界から主相に拡散し、 保磁力を増大させることが可能である。\n\n【0067】 温度保持工程が長くなりすぎると、粒成長が生じ、保磁力が低下するおそれがある ため、温度保持の時間は 15秒以上 600秒以下に設定することが好ま 、。\n\n【0068】 このような温度保持工程により、 Dy、 Tb、および Hoからなる群カゝら選択された少な くとも 1種の元素 Rは、主相に濃縮される。保持温度は、前述したように 700°C以上 9\n\nH\n\n00°C以下の範囲力 任意に設定され得る力 700°C〜800°C程度の温度に設定す ることが好ましい。\n\n【0069】 温度保持工程後に行う第 2冷却工程では、常温 (室温程度)まで 10°CZ秒以上の 冷却速度で凝固合金を冷却することが好ま ヽ、比較的大きな冷却速度で合金を冷 却することにより、結晶粒の成長を充分に抑制することができる。第 2冷却工程は、雰 囲気ガスとの接触による自然な冷却で足りる場合もあるが、凝固合金に冷却ガスを吹 き付けたり、冷却部材を接触させたりすることにより、積極的な冷却処理を行なっても 良い。\n\n【0070】 これら一連の工程は、真空または不活性ガス雰囲気中て行なうことが好ましい。図 3 に示す装置では、第 1冷却工程、温度保持工程、および第 2冷却工程を大気から仕 切られたチャンバ一内で実行している力 第 2冷却工程の後半では凝固合金 5の温 度は相当に低いレベルに低下しているため、大気に接しても酸ィ匕などによる品質劣 ィ匕の問題は少ない。このため、第 2冷却工程の一部または全部は、チャンバ一の外 部で行なっても良い。\n\n【0071】 なお、温度保持工程は、図 3に示すような装置によって行なう場合に限定されず、 他の方法で行なっても良い。例えば、ストリップキャスト装置の冷却ロール力 離れた 急冷合金を搬送しながら温度保持工程を行なうようにしても良い。この場合、搬送路 上にヒータによる加熱部を配置し、冷却ロール力 離れて搬送されてくる凝固合金の 自然放熱を抑制すればよい。\n\n【0072】 このようにして作製された急冷合金 (ストリップキャスト合金）中には、主相として R T\n\n2\n\nQ相（Rは希土類元素、 Tは遷移金属元素、 Qは B\n\n14 、 C、 N、 Al、 Si、および Pからな る群カゝら選択された少なくとも 1種の元素）が形成されている。 R T Q\n\n2 14 相（主相結晶粒\n\n)は、短軸方向サイズ (平均大きさ）が 3 m以上 10 m以下であり、長軸方向サイズ が 10 μ m以上 300 μ m以下の針状結晶（デンドライト)である。\n\n【0073】 第 2冷却工程が終了した時点における（as— spun)凝固合金では、主相である R T\n\n2\n\nQ相における元素 Rの濃度が R T Q相以外の相（粒界相など）における元素 Rの\n\n14 H 2 14 H 濃度よりも高ぐ主相への元素 R\n\nHの濃縮が実現している。\n\n【0074】 これは、温度保持工程を行なうことにより、第 1冷却工程終了段階において粒界相 部分に存在した元素 R力 主相である R T Q相に移動し、 R T Q相中に濃縮され\n\nH 2 14 2 14\n\nたことを意味している。こうして、最終的に R T Q相における元素 Rの濃度は、 R T\n\n2 14 H 2 14\n\nQ相以外の相における元素 Rの濃度よりも高い凝固合金が得られる。急冷合金中に\n\nH\n\nおけるデンドライトの間隔は、温度保持工程の前後で殆んど変化しない。このため、 R T Q相の短軸方向サイズは、 3 μ m以上 10 μ m以下の範囲のまま、殆んど変化せ\n\n2 14\n\nず、たとえデンドライド結晶が成長したとしても、その成長量は短軸方向にせいぜい 1 〜2 m程度である。\n\n【0075】 本発明では、ー且、室温程度まで冷却した急冷合金を再び加熱することによって D\n\nyを拡散させる方法を用いて 、な 、ため、そのような加熱による結晶粒の粗大化を抑 制することができ、 Dyなどの希土類元素による保磁力増大効果を効果的に高めるこ とが可能になる。\n\n【0076】 次に、上記の方法によって凝固合金を水素脆ィ匕法によって脆ィ匕させた後、ジェット ミル装置などの粉砕機を用いて粉砕し、微粉末化する。得られた乾式粉末の平均粒 径 (F. S. S. S.粒径）は、例えば 3. 0〜4. 0 mである。ジェットミル装置では、所 定量の酸素が導入された不活性ガスの高速気流を用いて原料合金を粉砕する。不 活性ガス中の酸素濃度は 1体積％以下に調節することが好ましい。より好ましい酸素 濃度は 0. 1体積％以下である。\n\n【0077】 本発明において、このように粉砕時の雰囲気中酸素濃度を制限する理由は、粒界 相から主相へ移動させた元素 Rが酸ィ匕によって再び粒界相部分に移動 \'析出しな\n\nH\n\nいようにするためである。粉末中に酸素が多く含まれると、 Dy、 Tb、 Hoなどの重希土 類元素 R\n\nHは、酸素と結合してより安定な酸ィ匕物を生成する傾向がある。本発明で用 いる合金組織では、酸素は主相中よりも粒界相に多く分布するため、主相中の元素 R\n\nHは再び粒界相へ拡散し、そこで酸ィ匕物生成に消費されるものと考えられる。このよ うにして主相中力 元素 R\n\nHが流出すると、保磁力の十分な向上を実現できないため\n\n、粉砕工程および次に説明する焼結工程では、粉末の酸化を適切に抑制することが 望ましい。\n\n【0078】 次に、粉体プレス装置を用い、上記粉末を配向磁界中で圧縮し、所望の形状に成 形する。こうして得られた粉末成形体を例えば 10—4Pa以上 106Pa以下の不活性ガス 雰囲気下で焼結する。このように酸素濃度を所定レベル以下に制限した雰囲気中に て焼結工程を実行することにより、焼結体 (焼結磁石）に含まれる酸素の濃度を 0. 3 質量％以下にすることが望ましい。\n\n【0079】 焼結温度は、主相に濃縮された Dyが長時間の焼結工程時に拡散しないように設 定することが好ましい。具体的には、液相が形成される温度（800°C)から、焼結密度 が真密度に達する温度までの昇温速度を 5°CZmim以上 50°CZmim以下の範囲 に設定することが好まし 、。焼結工程における昇温速度を 5°CZmim以上 50°CZmi m以下の範囲にすると、粉末となった凝固合金の主相に濃縮された Dyが等温保持\n\nによって再び Rリッチ相に拡散することを抑制することができる。\n\n【0080】 水素脆化処理を施すことにより粗粉砕された急冷合金の粉末には、水素が含有さ れているが、そのような水素を合金粉末から除去するため、焼結前に急冷合金を 80 0°C以上 1000°C以下の温度（例えば 900°C)で 30分から 6時間分程度保持しても良 い。このような脱水素工程を行なう場合、上記昇温速度での加熱は、脱水素工程の 後に行うことになる。\n\n【0081】 800°C以上 1000°C以下の温度範囲に保持する脱水素工程の後、焼結のための 昇温を行なうとき、昇温速度を 5°CZmim以上 50°CZmim以下の範囲にすると、焼 結にともなう粒成長が抑えられるため、等温保持によって向上した保磁力の低下を抑 制することちでさる。\n\n【0082】 なお、焼結後、 400°C〜900°Cの温度範囲で再加熱処理を行ってもょ 、。このよう な再加熱処理を行なうことにより、粒界相を制御し、保磁力を更に高めることができる\n\n【0083】 [実施例および比較例]\n\nまず、質量比率で 22%Nd— 6. 0%Pr- 3. 5%Dy-0. 9%Co— 1. 0%B—残部 Fe (その他に不可避的に混入する微量の不純物）の組成を有する合金の溶湯を、単 ロールのストリップキャスト法で急冷することにより、上記組成の凝固合金を作製した。\n\n【0084】 急冷を開始する直前における溶湯の温度は 1350°Cであり、ロール表面の周速度 は 70mZ分に設定した。第 1冷却工程では、図 3に示すようなストリップキャスト装置 により、凝固合金の温度 700〜800°C程度に低下させた。そして、図 3のドラム状容 器 6により、以下の表 1に示す条件で温度保持工程を行なった後、室温まで冷却する 第 2冷却工程を行なった。\n\n【0085】 [表 1]\n\n【0086】 なお、サンプル No. 4の比較例では、温度保持工程を行なうことなぐ室温まで単\n\n調かつ連続的な冷却工程を継続した。\n\n【0087】 こうして作製されたサンプル No. 1〜4の凝固合金について、電子線を照射して特 性 X線を検出する EPMA (Electron Probe Micro Analyzer)によるライン分析を行なつ たところ、 Dyの濃度は粒界相よりも主相において相対的に高ぐまた、 Ndおよび Pr の濃度は主相よりも粒界相において相対的に高いことを確認した。また、 BHトレーサ により磁気特性を測定したところ、以下の表 2に示す結果が得られた。\n\n【0088】 [表 2]\n\n【0089】 表 2からわかるように、サンプル No. 1〜3の保磁力 H は 20. 1〜20. 5kOeである cj\n\nのに対して、サンプル No. 4の保磁力 H は 19. 5kOeである。このように、保持力 H cj cj につ 、ては、実施例の値が比較例の値に比べて最大で 5%も高 、ことが確認できた\n\n【0090】 なお、本実施例では、前述のように、微粉砕工程時における酸素濃度を適切な範 囲に調節しているため、焼結工程における Dyの粒界への拡散を抑制するとともに、 保磁力の向上を達成することができた。\n\n産業上の利用可能性\n\n【0091】 本発明によれば、保磁力向上目的で添加した Dyなど元素 Rを、合金溶湯の冷却\n\nH\n\n過程の途中に実行する温度保持工程により、主相中に濃縮することができる。このた め、特別な熱処理工程を別途行なうことなぐ希少な重希土類元素を有効に活用して 保磁力を向上させることが可能になる。', '规格\n\n 用于稀土磁体的原料合金和粉末以及制造烧结磁体的方法技术领域\n\n  稀土磁体用原材料合金，其粉末的制造方法以及使用该稀土磁体用原材料合金粉末的烧结磁体的制造方法【0001】本发明涉及稀土磁体用原材料合金，其粉末的制造方法以及使用该稀土磁体用原材料合金粉末的烧结磁体的制造方法。\n\n 背景技术\n\n  【0002】钕铁硼硼磁体在各种磁体中具有最高的磁能积，并且价格相对较低，因此它们被用作HDD，MRI，电机和其他电子设备的重要部件。 被积极采用。\n\n  【0003】钕铁硼磁铁比NdFeB型晶体更强大。\n\n 2 14通常，它可以称为“ R-T-B系统磁体”。 在此，R为稀土元素，T为以Ni或Co为代表的过渡金属元素，主要为Fe，B为硼。 然而，由于一些B可以被诸如C，N，Al，Si和/或P之类的元素代替，因此在本文中还使用了B，C，N，Al，Si和P力的组。 至少还选择了力的一个元件用“ Q”表示，被称为“钕铁硼磁体”的稀土磁体被广泛地描述为“ R-T-Q稀土磁体”。 在R-T-Q稀土磁体中，R T Q晶粒是主要相。\n\n 2 14\n\n 我正在配置。\n\n  【0004】R-TQ稀土磁体用原料合金的粉末通过以下方法制造，该方法包括将原料合金粗粉碎的第一粉碎步骤和用于将原料合金微粉碎的第二粉碎步骤。 经常。 例如，在第一粉碎工序中，通过氢脆处理将原料合金粗粉碎至数百m以下的大小，然后在第二粉碎工序中，将粗粉碎的原料合金（粗粉粉碎粉）进行气流粉碎。 将其细碎至平均数米的大小。\n\n  【0005】磁铁原料合金自身的制造方法大致有两种。 第一种方法是铸锭法，其中将具有预定组成的熔融合金放置在铸模中并相对缓慢地冷却。 第二种方法是通过使指定成分的合金熔体与单辊，双辊，转盘或旋转圆柱型接触以使其快速冷却来使其熔融，然后将其熔融成比铸锭合金更薄的凝固。\n\n 以带式铸造法和离心铸造法为代表的淬火法用于制造固体合金。\n\n  【0006】在这种淬火方法的情况下，熔融合金的冷却速度例如在10lQ·CZ秒以上且104·℃·CZ秒以下的范围内。 通过淬火方法制造的淬火合金的厚度在0.03mm以上且10mm以下的范围内。 熔融合金从冷却辊的接触表面（辊接触表面）凝固，并且晶体从辊接触​​表面在厚度方向上以柱状（针状）形状生长。 结果，上述淬火合金在RTQ晶相之间具有晶界，其短轴尺寸为3m以上且10m以下且长轴尺寸为10m以上且300m以下。\n\n 2 14 2 14\n\n 它具有包含分散的富R相（稀土元素R的浓度相对较高的相）的精细晶体结构。 富R相是稀土元素R的浓度较高，且其厚度（相当于晶界的宽度）为10m以下的非磁性相。\n\n  【0007】与通过传统的铸锭法（铁型铸造法）制造的合金（锭合金）相比，淬火合金在较短的时间内冷却，因此组织更细。 并且晶粒尺寸小。 另外，其中晶粒细分散且晶界区域宽的富R相在晶界内较薄地散布，因此富R相的分散性也极好，烧结性得到改善。 因此，在制造具有优异性能的R-T-Q稀土烧结磁体时，已将淬火合金用作原料！\n\n  【0008】当允许稀有气体合金（特别是淬火合金）吸藏氢气并通过所谓的氢压碎处理粗粉碎时（该说明书将这种压碎方法称为“氢脆”）。  I）处理）），位于晶界处的富R相与氢反应并膨胀，倾向于从富R相部分（晶界部分）分裂。 因此，在通过氢粉碎稀土合金而得到的粉末的粒子表面上容易出现富R相。 此外，在淬火合金的情况下，富R相被细碎并且其分散性高，使得富R相特别可能暴露在粉碎的氢粉末的表面上。\n\n  【0009】通过上述氢脆化处理的粉碎方法公开在例如美国专利申请097503,738中。\n\n  【0010】为了提高这种RTTQ稀土磁体的矫顽力，已知有将稀土R的一部分置换为Dy，Tb，Z或Ho的技术。 在本说明书中，选自Dy，Tb和Ho的至少一种元素被称为R。\n\n 它\n\n  【0011】在被保护的同时，添加到R-T-Q稀土磁体原料合金中的元素R为：\n\n H\n\n 热水淬火后，几乎均匀地存在于晶界相中，不限于主相R T Q相\n\n 2 14\n\n 这将是。 存在于这种晶界相中的元素R\n\n 存在H对矫顽力的提高没有贡献的问题。\n\n  【0012】此外，由于存在于晶界的大量元素R，存在烧结性降低的问题。 这个\n\n H\n\n 当原料合金中的元素R的比例为1.5原子％以上时，变大的问题，\n\n H\n\n 当该比例超过2.0原子％时，变得显着。\n\n  【0013】此外，由于氢脆化处理和精细粉碎处理，凝固合金的晶界相部分为超细粉末。\n\n 一旦达到（粒径：1μm或更小），即使将粉末压制成细粉也可以容易地形成暴露的粉末表面。 超细粉末会在磨削过程中被去除，因为它会迅速引起氧化和着火问题，并对烧结产生不利影响。 一旦吞下暴露在粒径为1μm或更大的粉末颗粒表面的稀土，元素R的溶胀度就比Nd和Pr更大。\n\n H\n\n 存在于合金的晶界相中的元素R容易形成稳定的氧化物。\n\n H\n\n 因此，容易维持不被主相的稀土元素R代替的晶界相被维持的状态【0014】 被磁化的部分\n\n H\n\n 存在不能有效地用于提高功率的问题。 元素R是稀有元素，\n\n H\n\n 由于价格高，从有效利用资源和降低制造成本的观点出发，强烈希望消除上述浪费。\n\n  【0015】为了解决该问题，专利文献1公开了一种热处理步骤，该热处理步骤是将通过薄带连铸法制造的快速凝固的合金在400至800℃的温度范围内保持5分钟至12小时。 公开了通过应用以上所述，存在于晶界的重稀土元素集中在主相中。\n\n  【0016】虽然不打算以这种方式将Dy集中在主相中，但是为了调节淬火合金的组成，可以控制熔融合金的淬火过程。  2和专利文件3。\n\n  【0017】在专利文献2中，为了使淬火合金的组织微细化，将熔融合金的淬火工序分为一次冷却和二次冷却两个阶段，规定各阶段的冷却速度。 至\n\n 公开控制权。\n\n  【0018】在专利文献3中，在通过利用冷却辊对熔融合金进行快速冷却而制造了带状的快速凝固的合金之后，将该迅速凝固的合金放入容器中，并控制该迅速凝固的合金的温度。 它公开了控制。 在专利文献3中公开的方法中，通过控制在快速冷却至10至300℃时合金温度从900℃降低至600℃时的平均冷却速率来调节富R相的分布。 是在做。\n\n 专利文献1：日本专利申请第2003-507836号\n\n 专利文献2：JP-A-8-269643\n\n 专利文献3：日本特开2002-266006号公报\n\n 发明内容\n\n 本发明要解决的问题\n\n  【0019】然而，上述现有技术具有以下问题。\n\n  【0020】在专利文献1的方法中，将淬火合金一旦冷却至不发生元素扩散的温度（例如室温），则通过在与淬火装置不同的炉中加热淬火合金， 热处理在400至800℃下进行。 为了以这种方式完成淬火处理之后进行热处理，需要将淬火的合金加热至热处理温度的处理，这使制造工作复杂化并且使晶粒粗大化以降低矫顽力。 不便之处。\n\n  【0021】在专利文献2和专利文献3中公开的方法中，尽管可以细化淬火合金的结构并分散富R相，但是可以除去特定的稀土元素例如Dy。 晶界力不能扩散到主相中。\n\n  【0022】本发明是鉴于各种要点而提出的，其主要目的是将Dy，Tb和Ho集中并储存在主相中，这不会使制造过程复杂化。 本发明的目的是提供一种可以有效地改善磁力的R-Fe-Q稀土磁体的制造方法。\n\n 解决问题的手段\n\n  【0023】根据本发明的用于RT-Q系列稀土磁体的原材料合金的制造方法是RT-Q系列稀土合金（R为稀土元素，T为过渡金属元素，Q为B，  C，N，Al，Si和P为选自至少一个元素的基团力，而稀土元素R为Nd，Pr，Y，La，Ce，Pr，Sm，Eu，Gd， 从Er，Tm，Yb和Lu组成的组中选择\n\n 至少一种元素R和选自Dy，Tb和Ho中的至少一种。\n\n 制备含有晶种元素R和\n\n 第一冷却步骤是通过淬火至H或更高且1000或更低的温度来形成凝固合金，然后在700到900°C的温度范围内凝固15秒钟。 包括将温度保持在600秒或更短的温度保持步骤和将凝固的合金冷却至400℃或更小的温度的第二冷却步骤。\n\n  【0024】在优选的实施方式中，在保持温度的步骤中，将凝固合金的温度维持在该温度范围内的温度时，将凝固合金的温度降低10℃。 它包括降低冷却速率的步骤和以cz分钟或更小的加热速率提高Z或凝固合金温度的步骤。\n\n  【0025】在优选的实施方式中，在第一冷却步骤中，以冷却速度将熔融合金的温度降低至102℃·秒以上且104℃·秒以下。 包括步骤。 \n\n【0026】在优选的实施方式中，第二冷却工序包括以10℃·Z·秒以上的冷却速度降低凝固合金的温度的工序。\n\n  【0027】优选地，在该实施方式中，元素R为包含的全部稀土元素的5原子％以下。\n\n H\n\n 占据顶部。\n\n  【0028】在优选的实施方式中，紧接第二冷却步骤后的凝固合金中的R为\n\n 2\n\n Q\n\n 14相R中包含的元素\n\n H原子比占整个稀土元素的元素R\n\n 它大于H的原子比。\n\n  【0029】在优选的实施方式中，紧接第二冷却步骤后的凝固合金中的R为\n\n 2\n\n 在T Q相中包含的元素R的原子数比是元素R占据所包含的整个稀土元素。\n\n 它大于14 H H原子比的1.1倍。\n\n  【0030】在优选的实施方式中，稀土元素R为整体的11原子％以上且17原子％以下。\n\n 过渡金属元素T为整体的75原子％以上且84原子％以下，元素Q为整体的5原子％以上且8原子％以下。\n\n  【0031】在一个优选的实施方案中，合金是Ti，V，Cr，Mn，Ni，Cu，Zn，Ga，Zr。\n\n ，选自Nb，Mo，In，Sn，Hf，Ta，W和Pb的至少一种添加元素M。\n\n  【0032】在一个优选的实施方案中，第一冷却步骤包括用旋转的冷却辊冷却合金的熔体的步骤。\n\n  【0033】在一个优选的实施方式中，温度保持步骤包括以下步骤：利用加热到700℃以上且900℃以下的构件向快速凝固的合金供热。  ..\n\n  【0034】本发明的R-TQ稀土磁体原料合金粉末的制造方法是通过上述任一种制造方法制造的R-TQ稀土磁体原料合金的氢脆法。 它包括脆化步骤和粉碎用于RTQ稀土磁体的脆化原材料合金的步骤。\n\n  【0035】优选地，在粉碎RT-Q稀土磁体的步骤中，根据实施方案，使用惰性气体的高速流将RT-Q稀土磁体精细地粉碎。 执行。\n\n  【0036】根据本发明的烧结磁体的制造方法是制备通过上述方法或制造方法制造的R-TQ稀土磁体用原料合金粉末，并制造粉末的成形体。 以及烧结成型体的步骤。\n\n  【0037】根据本实施方式，优选在烧结成型体的步骤中，在脱氢步骤之后，将烧结密度从形成液相的温度（800℃）改变为真密度。 当加热到所达到的温度时，将加热速率设置为5°C Zmim或更高。\n\n  【0038】本发明的R-TB稀土磁体用原料合金是通过上述方法制造的稀土磁体用原料合金，具有主相和富R相。 在富R相的与主相和富R相之间的界面接触的部分中的元素R。\n\n H\n\n 元素R在主相中与界面接触的部分。\n\n 它低于H的浓度，并且在短轴方向上构成主相的晶粒的尺寸在3m以上且10m以下的范围内。\n\n 发明的效果\n\n  根据本发明，根据本发明，在冷却熔融合金以制备凝固合金的过程中，将冷却的凝固合金保持在700℃至900℃的温度范围内。 通过进行该处理，诸如Dy的重稀土可以从晶界扩散到主相中。 在本发明中，不必在冷却步骤完成之后将已冷却至室温水平的固化合金加热以进行热处理，从而可以获得具有不发生晶粒生长的精细组织的合金，并且Dy\n\n 可以充分地发挥通过任何重稀土元素增加矫顽力的效果。 附图的简要说明\n\n  【0040】[图1]示意性地示出了淬火步骤中合金的温度与经过时间之间的关系的图。\n\n 图2是示意性地表示本发明的实施方式的淬火处理中的合金温度与经过时间之间的关系的图。\n\n 图3是示出可以适当地用于实现本发明的设备的配置的设备。\n\n 图4是示意性地表示凝固合金的组织的图。\n\n 符号说明\n\n  【0041】1个坩埚\n\n 2中间包\n\n 4个冷却辊\n\n 5凝固合金\n\n 6桶形容器（保温装置）\n\n 7马达\n\n 实施本发明的最佳模式\n\n  【0042】在本发明中，首先，选择由RT-Q稀土合金（R是稀土元素，T是过渡金属元素，Q是B，C，N，Al，Si和P）构成的群力。 准备至少一种所选元素的熔体。 该基于R-T-Q的稀土合金是稀土元素R，其选自Nd，Pr，Y，La，Ce，Pr，Sm，Eu，Gd，Er，Tm，Yb和Lu。 至少一个元素R和至少一个由Dy，Tb和Ho组成的群力。\n\n 它包含元素R和。\n\n H\n\n  【0043】接下来，将具有上述组成的合金熔体快速冷却以产生凝固的合金，下面将详细描述本发明人在快速冷却这种合金熔体以产生凝固的合金的过程中。 通过执行所述的“温度保持步骤”，去除了位于凝固合金的晶界相中的元素R。\n\n H\n\n 通过发现本发明可以转移到主相并集中在主相中来完成本发明。\n\n  【0044】在下文中，将参照图2描述在本发明中执行的温度保持步骤。\n\n  【0045】图1是示出淬火过程中合金温度与经过时间之间的关系的示意图。\n\n 它是。 图的纵轴是合金温度，横轴是从淬火开始起经过的时间。\n\n  【0046】在图1所示的例子中，在从时刻t到时刻t的期间，进行熔融合金的第一冷却工序S1。\n\n 0 1\n\n 然后，从时间t到时间t执行温度保持步骤S2。 然后从时间t\n\n 1 2 2执行第二冷却步骤S3，直到时间t。\n\n 3\n\n  【0047】首先，考虑通过使用使熔融金属与旋转的冷却辊的外周面接触而制造带状的固化合金的通常的带铸法来制造固化合金的情况。 在这种情况下，在时间t，熔融合金与冷却辊的表面接触，并且冷却辊的除热打开。\n\n 0\n\n 开始。 之后，熔融合金在旋转的冷却辊上移动的同时被进一步冷却，并且在时间t，冷却辊的表面力也以凝固状态分离。 冷却低\n\n 1个\n\n 远离合金的合金的温度通常在800至1000℃的范围内。 在常规的条带铸造方法的情况下，由于二次冷却例如空气冷却，离开冷却辊的凝固合金的温度降低，并最终达到室温（例如室温）。 图1中的曲线图示出了当通过常规的带钢浇铸方法进行冷却时在时间t之后获得的温度变化，其由虚线表示。\n\n 1个\n\n  【0048】与这种常规的冷却过程相反，在本发明中，在时间t至时间t之间。\n\n 1 2\n\n 另外，其特征在于执行温度保持步骤。 在图1的曲线图中，用实线表示根据本发明的合金温度的变化。 从图1中可以看出，在温度保持步骤S2结束的时间t之后执行的第二冷却步骤S3中，传统示例中的虚线所示的温度变化。\n\n 2\n\n 类似地，通过自然冷却将温度降低至约室温。\n\n  【0049】在本发明中执行的温度保持步骤S2中，将合金在包括在700℃以上且900℃以下的温度范围内的预定温度下保持15秒以上且600秒以下。 在开始温度保持步骤S2时，在淬火合金的晶界处存在诸如Dy，Tb和Ho之类的元素R。\n\n H\n\n 认为它们在边界或主相中几乎均匀地分布。 然而，在温度保持步骤S2中，存在于晶界的元素R例如Dy扩散到主相中，而\n\n H\n\n 引起元素R扩散到晶界的现象。 保持温度为700°C以上且900°C以下\n\n 结果，凝固合金中的主相几乎完全为固态，但由于晶界富含稀土成分且熔点低，因此其至少一部分为液相。 认为当一部分晶界为液相时，诸如Dy的元素R从晶界主动扩散到主相。\n\n  【0050】图4是示意性示出凝固合金的微观组织的图。 主阶段包括RTQ阶段\n\n 2 14\n\n 晶界由含有高浓度稀土元素R的富R相构成。 根据本发明，合金被冷却以遵循图1中实线所示的温度曲线。因此，在图4所示的晶界处，诸如Nd的元素R相对增加，但是诸如Dy的元素被替换。  [R\n\n 获得其中H集中在主相中的结构结构，结果，可以提高矫顽力。\n\n  【0051】通过执行本发明的温度保持步骤S2，如图4所示，RT-B-B系稀土磁体原料合金的结晶相不会变粗，富R相变为主相。  Dy传播了。 因此，在主相的外相上形成了富含Dy的层。 以这种方式，通过执行温度保持步骤S 2，通过淬火步骤生产的用于RT-B-B稀土磁体的原料合金中的主相晶粒的晶粒尺寸分布保持为锐利的（尖锐的）。 照此，可以获得Dy浓度层的矫顽力提高效果。\n\n  【0052】不需要在主相的整个外表面上形成富Dy层，而可以在外壳的一部分上形成。 即使当Dy富集层形成在主相的外壳的一部分上时，也可以获得提高矫顽力的效果。\n\n  【0053】然后将如此获得的固化合金粉碎并粉碎。 当在破碎过程之前进行氢脆化过程时，晶界相部分可能暴露在粉末表面上，因此在惰性气体中进行破碎过程。 优选调整为1体积％以下。 如果大气中的氧气浓度超过1体积％并且变得太高，则粉末颗粒在粉碎过程中被氧化，并且一些稀土元素被消耗以形成氧化物。 当在用于稀土磁体的原料合金粉末中产生大量对磁性没有贡献的稀土氧化物时，主相R T Q型晶体相的丰度比降低。\n\n 2 14\n\n 因此，磁体特性劣化。 另外，元素R的氧化物在晶界处产生。\n\n H\n\n 收缩并且主相中元素R的浓度降低。 这种细粉碎是通过气流粉碎机进行的，\n\n H\n\n 可以通过使用诸如书写器或球磨机的破碎装置来执行。 在美国申请09Z851,423中公开了用喷射磨机进行研磨。 \n\n【0054】在下文中，将更详细地描述本发明的优选实施例。\n\n  【0055】首先，准备RT-Q系列稀土合金的熔融金属。 作为稀土元素R，Nd，Pr，\n\n 选自由Y，La，Ce，Pr，Sm，Eu，Gd，Er，Tm，Yb和Lu组成的组中的至少一种元素R，并选自由Dy，Tb和Ho组成的组。 至少是一个\n\n 包含种子元素R和。 在此，为了获得足够的矫顽力改善效果，稀土元素\n\n H\n\n 将元素R在整个元素中的原子比（摩尔比）设定为5％以上。 首选的\n\n H\n\n 在另一个实施方案中，稀土元素R的含量为整个合金的11原子％以上且17原子％以下，并且有助于提高矫顽力的元素R为整个稀土元素R的10原子％。\n\n H\n\n 占领上面。\n\n  【0056】过渡金属元素T以Fe为主成分（占T的50原子％以上），其余为Co和Z或Ni等过渡金属元素。 过渡金属元素T的含量占合金整体的75原子％以上且84原子％以下。\n\n  【0057】元素Q以B为主要成分，在NdFe B的四方晶系中以B（硼）排列。\n\n 2 14\n\n 作为可替换元素的C，N，Al，Si和P的群力还可包括至少一个被选择的元素。 元素Q的含量为整个合金的5原子％以上且8原子％以下。\n\n  【0058】除了上述主要元素外，合金还包含Ti，V，Cr，Mn，Ni，Cu，Zn，Ga，Zr，Nb，Mo，In，Sn，Hf，Ta，W和Pb。 从！组成的组中至少选择一个附加的载体M。\n\n  【0059】具有上述组成的原料合金的熔体通过与带钢铸造设备的冷却辊的表面接触而迅速固化。 作为本实施方式的带钢铸造装置，例如可以使用具有图3所示的结构的装置。\n\n  【0060】图3所示的装置被设计成可以倾斜并且可以存储熔融合金，用于容纳从单个坩埚供应的熔融合金的坩埚1，中间包2和处于中间包2中的熔融合金。 它配备有冷却辊4，用于在拉起时快速冷却。\n\n  【0061】该装置使滚筒状容器6旋转，从而使滚筒状容器6旋转，以对从旋转冷却辊4的表面分离的凝固合金5的薄条进行温度保持处理。 配有电机7。 鼓状容器6的至少内壁部的温度通过加热器（未图示）等保持在700℃以上900℃以下的范围内。 通过调节该加热器的输出，可以改变凝固合金5的保持温度。 温度\n\n 当电动机7在保持过程中旋转时，凝固的合金5的薄条例如被切成具有几厘米长的条，但是由于在鼓状容器6中被搅拌，因此许多条是近似均匀的。 将受到温度维护过程的影响。 在保温步骤完成之后，从鼓形容器6中取出凝固合金条5，然后通过自发冷却进一步降低温度。 从筒状容器6中取出凝固的合金5后，优选以尽可能快的速度U冷却。因此，有可能吹入冷却气体（例如氮气）。\n\n  【0062】当使用图3所示的设备实施本发明时，第一冷却步骤在熔融合金与冷却辊5的表面接触时开始，并且持续直到释放冷却辊5的表面力为止。 继续。 第一冷却步骤的时间例如为约0.1秒至10秒。 通过将冷却辊的转速（表面圆周速度）调整到合适的范围（例如，从lmZ秒到3 mZ秒），第一冷却步骤中的冷却速率为102°CZ秒 大于104请在°CZ秒或更短的范围内进行调整。 如果在第一冷却步骤中使凝固合金的温度降低太多，则不优选，因为需要额外的热处理以将温度升高至随后的温度保持步骤所需的温度。 因此，在第一冷却步骤中，期望将合金温度降低至700℃以上且1000℃以下的范围。\n\n  【0063】当将凝固的合金5容纳在鼓形容器6内时，执行在第一冷却步骤之后执行的温度保持步骤。 在图1所示的示例中，第一冷却过程在时间t完成。\n\n 1个\n\n 之后，立即开始温度保持处理。但是，在使用图3所示的装置的情况下，凝固合金5从冷却辊5向动力滚筒状的容器6内移动需要时间。 温度保持过程的开始时间会延迟时间。 如果以此方式延迟保温步骤的开始，则在这段时间内凝固合金5的温度将下降，但是只要温度不低于700℃就没有问题。 例如，当将保持温度设定为800℃时，在即将开始温度保持步骤之前的凝固合金5的温度可能下降至750℃。 在这种情况下，至少在保温步骤的初始阶段，在鼓形容器6中加热凝固的合金5，并且750℃的力也上升到800℃。 即使发生这种温度上升，在此期间，诸如Dy的元素R也将晶界力扩散到主相中。\n\n H\n\n 可以获得提高矫顽力的效果。 而且，由于温度保持过程是600秒或更短的短时间，所以晶粒的粗化也不成问题。\n\n  【0064】如上所述，本发明中的“温度保持步骤”不仅仅意味着严格地将凝固合金的温度保持在恒定水平。 与自然冷却的情况相比，通过有意地降低冷却速度，广义上是指延长通过700℃以上至900℃以下的温度范围的时间。\n\n  【0065】通常，当通过带式铸造法等制造凝固合金时，从冷却辊分离的凝固合金通过与大气或输送部件接触而被加热。 因此，为了执行本发明中的温度保持步骤，必须抵抗这种自然冷却（除热）向凝固的合金提供热量。 从这个意义上讲，本发明的“温度保持步骤”用作冷却期间执行的一种热处理步骤。\n\n  【0066】此外，即使试图使凝固的合金的温度保持恒定，实际上也不可避免地会发生轻微的温度变化。 例如，即使以10°CZmin。以下的冷却速度进行适度的冷却，或者以czmin.min以下的加热速度进行的温度上升非常缓和，与通常的冷却处理相比，温度也保持在大致恒定的温度。 公认它正在完成。 图2示意性地示出了在温度保持步骤S2中合金温度逐渐降低的示例（实线）和温度升高和降低的示例（虚线）。 即使在这种情况下，元素R（例如Dy）\n\n 可以将H从晶界扩散到主相并增加矫顽力。\n\n  【0067】如果保温时间过长，则可能发生晶粒长大且矫顽力降低，因此，保温时间优选设定为15秒以上600秒以下。\n\n  【0068】通过这样的温度保持步骤，选自Dy，Tb和Ho的至少一种元素R集中在主相中。 如上所述，保持温度为700°C或更高9\n\n H\n\n 低于00°C的力可以任意设置的力优选将温度设置为700°C至800°C左右。\n\n  【0069】在保温步骤之后的第二冷却步骤中，优选以10℃/秒以上的冷却速度将凝固的合金冷却至室温（室温），并以较高的冷却速度冷却合金。 由此，可以充分抑制晶粒的生长。 在第二冷却步骤中，通过与大气气体接触而自然冷却可能就足够了，但是可以通过将冷却气体喷射到凝固的合金上或通过使冷却构件接触来进行正向冷却处理。 你能行的。\n\n  【0070】这一系列步骤优选在真空或惰性气体气氛中进行。 在图3所示的装置中，在与大气隔开的腔室1中进行第一冷却工序，温度保持工序以及第二冷却工序的力是第二冷却工序的后半段中的凝固合金5的温度。 由于已降至相当低的水平，几乎没有因酸吞咽而导致质量差的问题，即使暴露在大气中也是如此。 因此，第二冷却步骤的一部分或全部可以在腔室1的外部执行。\n\n  【0071】温度保持步骤不限于使用图3所示的设备的情况，并且可以通过另一种方法来执行。 例如，可以在传送与带材铸造设备的冷却辊力分开的淬火合金的同时执行温度保持步骤。 在这种情况下，可以在输送路径上布置通过加热器的加热部，以抑制远离冷却辊力输送的凝固合金的自然散热。\n\n  【0072】在以这种方式生产的淬火合金（带钢铸造合金）中，R T\n\n 2\n\n Q相（R是稀土元素，T是过渡金属元素，Q是B\n\n 如图14所示，形成选自由C，N，Al，Si和P组成的组中的至少一种元素。  T\n\n 2 14相（主相\n\n ）是短轴尺寸（平均尺寸）为3m以上且10m以下且长轴尺寸为10μm以上且300μm以下的针状晶体（树枝状）。\n\n  【0073】在第二个冷却步骤结束时（作为纺丝）凝固合金中，主相R T\n\n 2\n\n 如果Q相中元素R的浓度在RT Q相以外的其他相（晶界相等）中为R T，\n\n 14 H 2元素高于主相R中的14 H浓度\n\n H的浓度已经实现。\n\n  【0074】，这是因为温度保持过程移至R T Q相，R T Q相是第一冷却过程结束时存在于晶界相中的元素R力的主要相，并且集中在R T Q相中。\n\n 高2 14 2 14\n\n 代表着。 因此，最后，R T Q相中元素R的浓度为\n\n 2 14高2 14\n\n 可以获得具有比Q相更高的元素R浓度的凝固合金。 在淬火合金中\n\n H\n\n 树突之间的空间在保温过程之前和之后几乎不变。 因此，短轴方向上的RTQ相的尺寸在3μm至10μm的范围内几乎保持不变。\n\n 2 14\n\n 即使生长树枝状晶体，其生长量在短轴方向上最多为1-2m。\n\n  【0075】在本发明中，通过快速加热冷却至大约室温的淬火合金，D \n\n通过使用扩散y的方法，可以抑制由于该加热引起的晶粒的粗大化，可以有效地提高Dy等稀土类元素的矫顽力提高效果。 成为。\n\n  【0076】接着，通过上述方法的氢脆法使固化的合金变脆，然后通过使用粉碎机例如喷射式粉碎机将其粉碎以获得细粉。 所得到的干燥粉末的平均粒径（F.S.S.S.S.粒径）是，例如，3.0〜4.0微米。 在喷射磨设备中，使用惰性气体的高速流将原料合金压碎，其中已引入一定量的氧气。 惰性气体中的氧浓度优选调整为1体积％以下。 氧浓度更优选为0.1体积％以下。\n\n  【0077】在本发明中，以这种方式限制研磨中的气氛中的氧气浓度的原因是，由于酸渣，从晶界相向主相移动的元素R再次向晶界相部分移动。 不要沉淀\n\n H\n\n 这是为了确保 如果粉末中含有大量氧气，则重稀土元素R（例如Dy，Tb和Ho）\n\n H倾向于与氧气结合形成更稳定的酰氯。 在本发明中使用的合金结构中，氧在晶界相中比在主相中分布更多。\n\n 认为H再次扩散到晶界相中，在其中它被消耗以产生氧化物。 这样，主相中力元件R\n\n 如果H流出，则矫顽力不能充分提高。\n\n 在下述的破碎步骤和烧结步骤中，期望适当地抑制粉末的氧化。\n\n  【0078】接下来，使用压粉装置，将粉末在取向磁场中压缩以使其形成期望的形状。 将这样获得的粉末成形体在例如10-4Pa以上且106Pa以下的惰性气体气氛中烧结。 通过在氧浓度被限制在预定水平以下的气氛中进行烧结处理，可以将烧结体（烧结磁铁）中所含的氧的浓度降低到0.3质量％以下。 理想的。\n\n  【0079】优选设定烧结温度，使得在长时间的烧结过程中，集中在主相中的Dy不扩散。 具体地，优选将从形成液相的温度（800℃）到烧结密度达到真密度的温度的升温速率设定在5℃Zmim以上且50℃CZmim以下的范围内。 更好，。 当烧结过程中的升温速率在5℃Zmim以上且50℃Czmim以下的范围内时，集中在粉末状凝固合金的主相中的Dy保持等温。\n\n 可以再次抑制向富R相的扩散。\n\n  【0080】尽管通过氢脆处理而粗碎的淬火合金的粉末含有氢，但是从合金粉末中除去了这种氢。 合金可以在800℃至1000℃（例如900℃）的温度下保持30分钟至6小时。 当进行这样的脱氢步骤时，在脱氢步骤之后进行以升温速度进行的加热。\n\n  【0081】在将脱氢过程保持在800°C至1000°C的温度后升高温度进行烧结时，加热速率应在5°CZmim至50°CZmim的范围内。 当设定为该值时，由于烧结引起的晶粒生长被抑制，因此，可以抑制通过维持等温条件而改善的矫顽力的降低。\n\n  【0082】烧结后，可以在400℃至900℃的温度范围内进行再热处理。 通过进行这样的再加热处理，可以控制晶界相，并且可以进一步提高矫顽力。\n\n  【0083】[实施例和比较例]\n\n 首先，就质量比而言，组成为22％Nd-6.0％Pr-3.5％Dy-0。 通过单辊薄带连铸法将合金的熔融合金淬火，以制备具有上述组成的凝固合金。\n\n  【0084】刚开始淬火之前的熔融金属的温度为1350℃，辊表面的圆周速度为70mZ。 在第一冷却步骤中，通过使用如图3所示的带铸机将凝固的合金的温度降低至约700至800℃。 然后，使用图3中的鼓状容器6，在下表1所示的条件下执行温度保持步骤，然后执行冷却至室温的第二冷却步骤。\n\n  【0085】[表1]\n\n  【0086】此外，在4号样品的比较例中，在不进行温度保持步骤的情况下将温度保持在室温。\n\n 继续进行受控的连续冷却过程。\n\n  【0087】当将这样制备的样品1-4的凝固合金通过EPMA（电子探针显微分析仪）进行线分析，该EPMA通过用电子束照射特征X射线来检测特征X射线。 可以确认，主相中的Nd和Pr的浓度比晶间相的高，并且，晶间相的Nd和Pr的浓度比主相的相对高。 用BH示踪剂测量磁性能，并获得下表2中所示的结果。\n\n  【0088】[表2]\n\n  【0089】从表2可以看出，No.1〜3的样品的矫顽力H为20.1〜20.5kOe。\n\n 另一方面，4号样品的矫顽力H为19.5kOe。 如上所述，可以确认，与比较例相比，本实施例的值中的保持力H cj cj最大为5％。\n\n  【0090】在本实施例中，如上所述，通过将微粉碎工序中的氧浓度调整为适当的范围，从而抑制了烧结工序中Dy向晶界的扩散。 同时，我们可以提高矫顽力。\n\n 工业可用性\n\n  【0091】根据本发明，在熔融合金中冷却为了提高矫顽力而添加的元素例如Dy。\n\n H\n\n 在该过程的中间进行的保温步骤允许在主相中进行浓缩。 因此，可以有效地利用稀有重稀土元素，而无需执行特殊的热处理步骤并提高矫顽力。');
INSERT INTO `os_patent_instruction_text` VALUES (13056, 22885, '【技術分野】\n\n【0001】\n\n本発明は、粉末成形体の製造方法に関し、特に、焼結磁石に適した希土類合金粉末成形体の製造方法に関する。\n\n【背景技術】\n\n【0002】\n\n様々な部品の製造に用いられる粉末成形体は、セラミックや金属粉などの粉末材料をプレス成形することによって形成される。粉末成形体は、例えば、高温で焼結された後、焼結体の寸法や外形を整えるための仕上げ加工工程を経て、最終的な部品となる。\n\n【0003】\n\n一般に、粉末成形体の品質は、焼結体の品質(例えば物性や外形)に影響する。従って、高品質の粉末成形体を得るために、用途に応じて、種々のプレス成形方法が検討されている。\n\n【0004】\n\n例えば、希土類合金を用いた焼結磁石は、以下のように製造されている。\n\n【0005】\n\n(1)原料金属を高温で溶解し、所定の組成の希土類合金塊を得る。\n\n【0006】\n\n(2)この合金塊を粉砕して、微小な希土類合金粉末(平均粒径:数μm)を得る。\n\n【0007】\n\n(3)得られた合金粉末を磁界中でプレス成形する(以下、「磁界中成形法」と呼ぶ場合がある。)ことによって所定の形状の成形体を得る。合金粉末は、必要に応じて表面に潤滑剤が付与される。\n\n【0008】\n\n(4)この成形体を高温(例えば約1000℃以上)で焼結し、焼結磁石を得る。\n\n【0009】\n\n(5)得られた焼結磁石の磁気特性を高めるために、更に時効処理と呼ばれる熱処理を行う。\n\n【0010】\n\n(6)この焼結磁石の表面を研磨し、寸法と形状を整える。\n\n【0011】\n\n上記(3)の磁界中成形法は、配向磁界の印加方向によって、プレス方向(圧縮方向)と平行な配向磁界を印加する平行プレス法と、プレス方向と直交する方向に配向磁界を印加する直角プレス法とに大別される。直角プレス法によれば、配向磁界によって整列した磁化容易軸を崩さずにプレス成形することができるため、平行プレス法に比べて高い異方性を有する磁石が得られる。\n\n【0012】\n\n磁気特性に優れた希土類磁石を製造するためには、プレス成形時において、希土類合金粉末を均一に配向させることが重要である。例えば、直角プレス法によって得られた成形体を切り出して作製されるVCM用磁石は、成形体の配向角度の不均一さに起因して、残留磁束密度などの磁気特性がばらつくなどの問題がある。\n\n【0013】\n\n希土類合金粉末成形体の配向度を高めるため、多くのプレス成形方法が提案されている。\n\n【0014】\n\n例えば、特許文献1には、非磁性金型に設けられた複数のキャビティと磁界発生装置の磁極との間に、強磁性材料から形成された複数のヨーク部材が配置されたプレス装置において、キャビティに対するヨーク部材のサイズおよび配置が最適化されたプレス装置が開示されている。このプレス装置を用いれば、複数のキャビティ内における配向磁界の分布が制御されるため、焼結後における成形体の反りや割れ·欠けなどが生じ難い希土類合金粉末磁石を製造することができる。\n\n【0015】\n\n特許文献2には、直角プレス法と冷間等方圧加圧法(Cold  Isostatic  Pressing、CIP)とを組合わせることにより、磁極面の法線(プレス方向)に対する磁界方向の傾角(配向角度のズレ)が極めて小さい永久磁石を製造する方法が開示されている。詳細には、特許文献2には、原料粉末に対してCIPを行う前に、約0.4t/cm2から4t/cm2(約39MPaから390MPa)の比較的低い圧力下で配向磁界を印加する方法が記載されている。ここでは、キャビティ端部における磁場の不均一さを解消するため、金型に、キャビティの一部を構成する非磁性金型部材を突出させた突設部分を設けている。\n\n【特許文献1】特開2002-47503号公報(NEOMAX)\n\n【特許文献2】特開平2-146705号公報(日立金属)\n\n【発明の開示】\n\n【発明が解決しようとする課題】\n\n【0016】\n\n近年、アンジュレータや半導体製造装置用リニアモーターなどに用いられる磁石では、\n\n磁石内の磁化容易軸の方向が均一に揃っていることへの要請が益々高まっている。ところが、前述した特許文献1に記載のプレス装置では、このような要請に充分対応できない場合がある。\n\n【0017】\n\n特許文献2に開示された方法では、直角プレス法とCIPとを併用しているため、装置が大きくなって工程も複雑になり、量産性に適さないなどの問題もある。更に、この方法では、所定の突設部分を備えた金型を特別に用意する必要がある。\n\n【0018】\n\n本発明は、上記の諸点に鑑みてなされたものであり、その主な目的は、特殊な金型やCIPを用いなくても、粉末成形体の配向度が高められ、優れた磁気特性を有する永久磁石の提供を可能にする粉末成形体の製造方法を提供することにある。\n\n【課題を解決するための手段】\n\n【0019】\n\n本発明による粉末成形体の製造方法は、磁性粉末を用意する工程(a)と、前記磁性粉末をキャビティ内に充填する工程(b)と、前記キャビティに充填された前記磁性粉末を互いに対向する一対の加圧面の間でz軸方向に一軸プレスすることによって成形体を形成する工程(c)と、前記成形体に対して脱磁処理を行う工程(d)と、を含む粉末成形体の製造方法であって、前記キャビティは、金型に設けられたダイホールによって構成されており、前記金型は、強磁性体から形成された第1金型部材と、非磁性体から形成された第2金型部材とを含み、前記工程(c)は、z軸方向に直交する第1方向に配向磁界を印加する工程(c1)を含み、前記配向磁界は、少なくとも、前記キャビティ内に充填された前記磁性粉末がプレスされて約0.4以上の相対密度に到達したときに印加されており、且つ、前記キャビティの前記配向磁界に交差する面は、前記第1金型部材の面である。\n\n【0020】\n\nある好ましい実施形態において、前記強磁性体の飽和磁化4πIsは約1.5T以上であり、前記強磁性体の保磁力は6.4kA/m以下である。\n\n【0021】\n\nある好ましい実施形態において、前記磁性粉末として、R-T-(M)-B系合金粉末(Rは、Yを含む希土類元素、TはFeまたはFeとCoとの混合物、Mは添加元素、Bはボロン)を使用する。\n\n【0022】\n\nある好ましい実施形態において、前記R-T-(M)-B系合金粉末は急冷法を用いて作製される。\n\n【0023】\n\nある好ましい実施形態において、前記工程(c)は、前記磁性粉末に対し、前記第1方向に前記磁性粉末の保磁力より大きい第1の正磁界を印加した状態でプレスする工程(c2)と、前記磁性粉末がプレスされて所定の相対密度に到達した後に、前記第1方向と逆向きに第1の逆磁界を少なくとも1回印加する工程(c3)と、前記工程(c3)によって得られた前記磁性粉末に対し、前記第1方向に前記磁性粉末の保磁力より大きい第2の正磁界を印加した状態でプレスする工程(c4)と、を含む。\n\n【0024】\n\nある好ましい実施形態において、前記工程(c3)における前記所定の相対密度は0.2以上0.5以下の範囲内である。\n\n【0025】\n\nある好ましい実施形態において、前記工程(c3)と前記工程(c4)との間に、前記第1方向に前記磁性粉末の保磁力より大きい第3の正磁界を印加する工程(e)、および前記第1方向と逆向きに第2の逆磁界を印加する工程(f)を更に含む。\n\n【0026】\n\nある好ましい実施形態において、前記工程(e)から前記工程(f)を繰返し行う。\n\n【0027】\n\nある好ましい実施形態において、前記工程(c3)および前記工程(f)は、前記磁性粉末の相対密度をほぼ一定に保った状態で行う。\n\n【0028】\n\nある好ましい実施形態において、前記工程(c3)における前記第1の逆磁界は、前記磁性粉末の保磁力より大きい。\n\n【0029】\n\nある好ましい実施形態において、前記工程(c3)における前記第1の逆磁界は、前記磁性粉末の保磁力より小さい。\n\n【0030】\n\nある好ましい実施形態において、前記工程(a)に用いられる前記磁性粉末の保磁力は150kA/m以上である。\n\n【0031】\n\n本発明による焼結体の製造方法は、上記の粉末成形体の製造方法によって成形体を製造する工程と、前記成形体を焼結する工程と、を含む。\n\n【発明の効果】\n\n【0032】\n\n本発明によれば、特殊な金型やCIPを用いなくても、配向角度のズレが小さい成形体を作製できるため、磁気特性に優れた永久磁石を製造することができる。\n\n【発明を実施するための最良の形態】\n\n【0033】\n\n本発明者は、配向角度のズレが小さい成形体を作製し得る簡便な方法を提供するため、検討してきた。その結果、強磁性部材が所定の位置に配置された金型を用い、好ましくは、後記するスイング法や制御スイング法を用いて磁界中成形を行うと、所期の目的が達成されることを見出し、本発明を完成した。\n\n【0034】\n\n本明細書において、「配向角度のズレが小さい」とは、後記する実施例の欄に詳しく説明するように、焼結体の研摩面にX線を照射し、磁化容易軸方向のピークを用いて作成された極点図の強度中心方向、すなわち、配向角度と成形時の磁界配向方向とのずれ角度が約5°以下に抑えられていることをいう。\n\n【0035】\n\n(実施形態)\n\n以下、図面を参照しながら、本発明による粉末成形体の製造方法の実施形態を説明する。\n\n【0036】\n\n本実施形態の製造方法は、磁性粉末を用意する工程(a)と、前記磁性粉末をキャビティ内に充填する工程(b)と、前記キャビティに充填された前記磁性粉末を互いに対向する一対の加圧面の間でz軸方向に一軸プレスすることによって成形体を形成する工程(c)と、前記成形体に対して脱磁処理を行う工程(d)と、を含んでいる。上記工程(c)は、z軸方向(プレス方向)に直交する第1方向に配向磁界を印加する磁界中成形工程を含む。磁界中成形工程は、前記キャビティ内に充填された前記磁性粉末がプレスされて約0.4以上の相対密度(=実測密度/真密度)に到達する工程(c1)を含んでいる。\n\n【0037】\n\n本実施形態は、上記工程(c1)において、キャビティの配向磁界に交差する面は、強磁性体から形成された第1金型部材の面であることに特徴がある。換言すれば、本実施形態による粉末成形体の製造方法は、このような要件を満足する金型を用いて磁界中成形を行ったことに特徴がある。後に詳しく説明するように、本実施形態によれば、反磁界による磁束の乱れを最も被る部分(粉末成形体の磁極部)に強磁性体を設けているため、成形体の配向角度のズレを抑えられる。更に、本実施形態によれば、CIPを用いなくても、プレス成形するだけで配向度が高められた粉末成形体を得ることができる。\n\n【0038】\n\n(金型)\n\n図1および図2を参照しながら、本実施形態に用いられる金型(ダイ)10の構成を説明する。本実施形態によれば、図1に示すような単純な構造の金型を使用しても、配向角度のズレを抑えられた焼結体を製造することができる(後記する実施例を参照)。\n\n【0039】\n\n図1に示すように、金型10は、一対の第1金型部材1と一対の第2金型部材2とから構成されている。金型10には、上下方向に貫通する開口部(ダイホール)3が設けられている。ダイホール3には下方から下パンチ(図2中、8)が嵌入自在に配置され、ダイホール3の内面と下パンチの加圧面(図2中、8a)とによって任意の内容積のキャビティ5が規定される。図1および後記する図2において、成形体のプレス方向をz軸、配向磁界の印加方向をx軸で表す。x軸はz軸に直交している。\n\n【0040】\n\n図1に示すように、一対の第1金型部材1および一対の第2金型部材2は、いずれも、キャビティ5を介して、互いに対向するように配置されている。第1金型部材1は、図2に示すように、強磁性部材11、12を含んでいる。第2金型部材2は非磁性体から形成されている。\n\n【0041】\n\n図2は、キャビティ内に充填された磁性粉末6がプレスされて約0.4以上の相対密度に到達した状態で、配向磁界9が印加されたときにおける、磁性粉末6と金型10との関係を模式的に示す図である。以下では、磁性粉末に圧力が印加され、最終的な成形体が得られる前の磁性粉末を「圧粉体」または「仮成形体」と呼ぶ場合がある。「圧粉体」または「仮成形体」は、キャビティから取り出した状態で形状を維持できないものも含む。図2(a)は本実施形態の要件を満足する例であり、図2(b)および図2(c)は本実施形態の要件を満足しない例である。\n\n【0042】\n\n図2(a)に示すように、キャビティの配向磁界9に交差する面は、第1金型部材1の強磁性部材11、12の面に当接している。換言すれば、本実施形態では、圧粉体6の相対密度が約0.4以上のとき、圧粉体6を通過する配向磁界9は全て、強磁性部材11、12を通るように磁界中成形が行なわれている。\n\n【0043】\n\nこれに対し、図2(b)および図2(c)に示す方法は、本実施形態の範囲に包含されない。図2(b)および図2(c)によれば、圧粉体6を通過する配向磁界9の一部は強磁性部材11、12を通っているが、圧粉体6を通過する他の配向磁界9’は強磁性部材11、12を通らないからである。\n\n【0044】\n\nこのことは、以下のことを意味している。本実施形態では、配向磁界は、少なくとも、圧粉体の相対密度が約0.4以上に到達したときには印加されている。この状態で、当該圧粉体と第1金型部材とが交差する金型部分は、すべて、強磁性体から形成されていることを意味する。本実施形態に用いられる金型は、上記の要件を満足していれば良く、配向角度のズレに悪影響を及ぼさない限度において、種々の改変を含み得る。本実施形態では、例えば、特許文献2に記載された所定の突設部分を金型に設けても良い。\n\n【0045】\n\n第1金型部材に占める強磁性部材11、12の比率は、磁界を均一にして成形体の配向角度のズレをより小さくするため、高い方が好ましい。第1金型部材は、強磁性体のみから形成されていても良い。\n\n【0046】\n\n第2金型部材2は強磁性体を含んでいてもよく、強磁性体のみから形成されていてもよい。また、金型部材の接合部分を、例えばボルトで締結して接合部分の強度を高めるなどの手段を講じてもよい。\n\n【0047】\n\n図1に示す金型10を用いると、前述した特許文献1に開示されたヨーク部材を備えた金型を用いた場合に比べ、配向角度のズレを抑えられる(後記する実施例を参照)。以下、この理由を、図3を用いて説明する。\n\n【0048】\n\n図3(a)および図3(b)は、二種類の金型X、Yにおける磁束の流れを上面から見たときの模式図である。金型Xは本発明例であり、後記する実施例に用いたものである。金型Yは特許文献1に記載された比較例の金型である。参考のため、非磁性体19のみから形成された従来例の金型Zにおける磁束の流れを図3(c)に示す。\n\n【0049】\n\n図3(c)に示すように、従来例の金型Zでは、キャビティ5内の磁性粉末6に生じる反磁界の影響により、磁束13は、磁極面14、15付近で外側へ大きく傾いている。そのため、金型Zを用いて作製された成形体では、配向角度のズレが大きくなる。\n\n【0050】\n\nこれに対し、比較例の金型Yでは、キャビティ5内における配向磁界の分布を均一に制御し得るように、複数のヨーク部材16、17が最適化されたサイズで配置されているため、磁束の乱れは殆ど見られない(図3(b)を参照)。\n\n【0051】\n\n本発明例の金型Xによれば、反磁界による悪影響を最も被る部分を含む広い領域に強磁性部材18を設けているため、磁束の乱れをさらに抑えられる(図3(a)を参照)。\n\n【0052】\n\n次に、本発明例の金型Xおよび比較例の金型Yを用いて作製した各成形体の磁束密度分布のバラツキ(標準偏差、σn)を調べた。\n\n【0053】\n\n成形体の作製条件は以下のとおりである。圧粉体の密度:4.2g/cm3、配向磁界の向き:X軸方向(プレス方向に垂直)、配向磁界の強度:1.5T、磁性粉末の充填量:170g、プレス圧力:306kg/cm2(約30MPa)\n\n【0054】\n\nその結果、比較例の金型Yを用いて作製した成形体では、磁束密度分布のバラツキσnは0.029と大きいが、本発明例の金型Xを用いると、成形体の磁束密度分布のバラツキσnは0.016と小さくなることが分かった。\n\n【0055】\n\n本明細書において、強磁性部材に用いられる強磁性体は、以下の要件を満足することが好ましい。\n\n【0056】\n\nまず、強磁性体の飽和磁化は、4πIsで約1.5T以上であることが好ましい。これにより、成形体の配向の乱れが低減される。なお、その上限は、成形体の配向の乱れの低減という観点からは特に限定されないが、おおむね、2.4Tが好ましい。\n\n【0057】\n\nまた、強磁性体の保磁力(HCj)は、6.4kA/m以下であることが好ましい。これにより、成形体を金型から取り出した後に金型の強磁性体部分に残存する金型残磁(金型表面中央部分の磁束密度で評価される)を抑えられる。そのため、従来のように、脱磁処理を成形体と金型の両方に行う必要はなくなり、金型から成形体を容易に取り出すことが可能になった。なお、その下限は特に限定されず、0kA/m超であればよい。\n\n【0058】\n\nこれらの要件を満足する強磁性材料として、例えば、炭素工具鋼(JIS  SK3相当材)などが挙げられる。これらは、単独で含まれていても良いし、2種以上を併用することもできる。\n\n【0059】\n\n本実施形態に用いられる非磁性体材料としては、例えば、高硬度非磁性快削鋼(HPM75、非磁性ハイマンガン鋼など)などが挙げられる。\n\n【0060】\n\n金型10の硬度は、できるだけ高いことが好ましい。これにより、キャビティ内への成形時に磁性粉末の粉噛みによる金型の損傷を抑えられる。金型10の硬度は、ロックウエル硬度で約40HRC以上であることが好ましい。\n\n【0061】\n\n(磁界中成形法)\n\n本実施形態において、前述したプレス工程(c)は、磁性粉末6に対し、プレス方向(z軸)と直交する第1方向(x軸)に磁性粉末の保磁力より大きい第1の正磁界を印加した状態でプレスする工程(c2)と、磁性粉末6がプレスされて所定の相対密度に到達した後に、第1方向と逆向きに第1の逆磁界を少なくとも1回印加する工程(c3)と、工程(c3)によって得られた磁性粉末6に対し、第1方向に磁性粉末6の保磁力より大きい第2の正磁界を印加した状態でプレスする工程(c4)と、を含むことが好ましい。\n\n【0062】\n\n以下、図4(a)および図4(b)を参照しながら、本実施形態におけるプレス工程の好ましい態様を詳しく説明する。以下では、説明の便宜上、図4(a)に示す方法を「スイング磁界法」と呼び、図4(b)に示す方法を「制御スイング磁界法」と呼ぶ場合がある。図4(a)は、後記する実施例の欄に記載された成形条件2に対応する。\n\n【0063】\n\n図4(a)および図4(b)に示すように、スイング磁界法および制御スイング磁界法は、いずれも、磁性粉末の相対密度が所定の範囲内となった段階で、好ましくは、この相対密度をほぼ一定に保った状態で、配向磁界を印加しており、正磁界と逆磁界とを交互に印加する点で一致している。以下では、後で説明する工程(c2)で印加する磁界を「正磁界」と呼び、これとは逆向きの磁界を「逆磁界」と呼ぶ。\n\n【0064】\n\nスイング磁界法と制御スイング磁界法とは、主に、圧粉体に印加される逆磁界の大きさが相違する。スイング磁界法では、図4(a)に示すように、圧粉体に印加される正磁界および逆磁界の強度(絶対値)は、すべて、同じであり、いずれも、磁性粉末の保磁力よりも大きくなるように設定されている。\n\n【0065】\n\nこれに対し、制御スイング磁界法では、図4(b)に示すように、圧粉体に印加される逆磁界の強度(絶対値)は、磁性粉末の保磁力よりも小さくなるように設定されている。\n\n【0066】\n\n制御スイング磁界法を採用すれば、スイング磁界法に比べて、高い配向度を備えた粉末成形体を歩留まり良く作製できる。このような効果は、特に、保磁力が約150kA/m以上の希土類合金粉末を使用した場合に顕著に発揮される。なお、本願出願人は、制御スイング磁界法を用いて粉末成形体を製造する方法について、先に特許出願を完了している(特願2005-157562号、以下、先願明細書と呼ぶ場合がある。)。先願明細書の実施例の欄には、保磁力が約200kA/mの希土類合金粉末に対し、上記の制御スイング磁界法を実行すると、パルス磁界を印加しなくても、成形体の配向度を高められることを実証している。\n\n【0067】\n\n(スイング磁界法)\n\n図4(a)を参照しながら、スイング磁界法を説明する。\n\n【0068】\n\nはじめに、本実施形態におけるプレス成形方法を説明する。希土類合金粉末の製造方法は後述する。\n\n【0069】\n\nまず、希土類合金粉末に対し、希土類合金粉末の保磁力より大きい第1の正磁界を印加した状態で、工程(c3)に規定する所定の相対密度(0.2以上0.5以下)に到達するまでプレスする(工程(c2))。工程(c2)は、合金粉末がある程度配向される方\n\n法によって磁界中でプレスすれば良く、特に限定されない。印加される磁界は、静磁界およびパルス磁界のいずれも適用することができ、静磁界とパルス磁界とを重畳してもよい。ここで、パルス磁界とは、0.5msec以上10msec以下の時間で最高磁界強度に到達する磁界をいう。\n\n【0070】\n\nプレス成形には、前述した金型を用いること以外、公知のプレス成形装置を用いることができる。典型的には、上下パンチで金型のキャビティ(ダイホール)内の粉末をプレスする一軸プレス成形装置が用いられる。\n\n【0071】\n\n具体的には、例えば、ダイに設けたダイホール(貫通孔)内に上下一対のパンチを挿入し、プレス成形する。ダイホールと下パンチの上面(加圧面)によって形成されるキャビティに合金粉末を充填する。\n\n【0072】\n\n合金粉末の充填は公知の種々の方法で実行される。例えば、フィーダボックスを用いて合金粉末の自重を利用して充填する方法が簡便で好ましい。この方法を用いると、キャビティ内に適当な見掛け密度(例えば1.5g/cm3〜2.5g/cm3)で合金粉末を充填することができる。また、キャビティ内に合金粉末を充填した後、例えば、ダイの表面に沿って摺り切り棒などを移動させることによって余剰の合金粉末を除去すれば、キャビティに充填される合金粉末の量をほぼ一定にできる。例えば、特開2001-9595号公報に記載されている給粉方法を好適に用いることができる。\n\n【0073】\n\n次に、上パンチおよび/または下パンチを昇降させることによって、キャビティ内の合金粉末を一軸プレスする。典型的には上パンチを下降させるが、上パンチを下降させるとともに下パンチを上昇させてもよい。\n\n【0074】\n\n磁界の印加方向は、プレス方向(パンチ移動方向)に対して垂直とする。\n\n【0075】\n\n成形圧力は、用いられる希土類合金の種類やプレス成形装置の種類などによっても相違するが、おおむね、20MPa以上120MPa以下の範囲内であることが好ましい。一般に、成形圧力が低いほど成形体の配向度は向上するが、成形圧力が低過ぎると成形体の強度が不足し、取り扱いが困難になるなどの問題が生じるからである。\n\n【0076】\n\n次に、希土類合金粉末がプレスされて或る相対密度(好ましくは、0.2以上0.5以下)に到達した後に、好ましくは、この相対密度をほぼ一定に保った状態で、希土類合金粉末の保磁力より大きい第1の逆磁界を少なくとも1回印加する(工程(c3))を含む磁界処理を行う。\n\n【0077】\n\nスイング磁界法では、工程(c3)において、希土類合金粉末の保磁力より大きい逆磁界を印加する。これにより、逆磁界を印加しない場合に比べ、特に、保磁力が約150kA/m以下の希土類合金の配向度を高められる。逆磁界の印加による上記作用を発揮させるためには、逆磁界の強度は、少なくとも、希土類合金粉末の保磁力よりも大きければ良く、用いられる希土類合金粉末の保磁力や合金の組成などとの関係によっても変化し得る。従って、逆磁界の強度は一義的に定めることはできないが、例えば、希土類合金粉末(保磁力:約100kA/m)を用いる場合、逆磁界の強度は、おおむね、500kA/m以上2000kA/m以下の範囲内にあることが好ましい。\n\n【0078】\n\nこのような逆磁界は、希土類合金粉末の仮成形体(圧粉体)が所定の相対密度に到達した時点で、磁界発生装置によって印加する。圧粉体の相対密度が低い時点で逆磁界を印加すると、圧粉体の相対密度が上昇するにつれて、粉末粒子の配向が乱れる。そのため、最終的に得られる成形体における粉末粒子の配向度は充分でないことがある。一方、圧粉体\n\nの相対密度が高い時点で逆磁界を印加しても、個々の粉末粒子は方向を変えることができない。具体的には、圧粉体の相対密度は、好ましくは0.2以上0.5以下の時点、より好ましくは0.3以上0.4以下の時点で逆磁界を印加する。\n\n【0079】\n\n逆磁界は、圧粉体の相対密度を、ほぼ、一定に保って印加することが好ましい。圧粉体の相対密度を増加させながら逆磁界を印加すると、圧粉体の配向度が低下する恐れがあるからである。\n\n【0080】\n\n工程(c3)では、このような逆磁界を少なくとも1回印加する。例えば、図4(a)に示すように、逆磁界を合計3回(逆磁界→正磁界→逆磁界→正磁界→逆磁界)印加してもよい。このように逆磁界を印加した後、正磁界および逆磁界を、この順序で、交互に印加するというサイクルを少なくとも1回行うことによって成形体の配向度は一層高められる。\n\n【0081】\n\nここでは、圧粉体の相対密度が所定の値に到達した後に、逆磁界を合計3回(正磁界を加えると合計5回)印加しているが、これに限定されない。本発明者の実験結果によれば、成形体の配向度を高めるためには、例えば、逆磁界を合計で5回以上(正磁界加えると合計で11回以上)印加することが好ましいことが分かった。なお、その上限は、配向度の観点からは特に限定されないが、製造効率やコストなどを考慮すると、例えば、逆磁界を合計で3回以下(正磁界を加えると合計で7回以下)印加することが好ましい。\n\n【0082】\n\n磁界は、プレス方向(パンチ移動方向)に対して直交する方向に印加される。\n\n【0083】\n\n逆磁界は、静磁界、パルス磁界のいずれも適用することができ、パルス磁界と静磁界とを重畳してもよい。\n\n【0084】\n\n工程(c3)で規定するように、圧粉体の密度が所定の範囲にある時点で逆磁界を印加するという動作を確実に実行するためには、上パンチおよび/または下パンチのストロークを制御し、仮成形体の密度が所定密度に到達した時点で一旦上パンチおよび/または下パンチのストロークを停止することが好ましい。これにより、配向度が一層高められる。\n\n【0085】\n\n次に、最終的な成形体の相対密度が、おおむね、0.53以上0.60以下となるように、希土類合金粉末の保磁力より大きい第2の正磁界を印加した状態で再度プレスする(工程(c4))。工程(c4)のプレス方法は、前述した工程(c2)に記載したとおりである。\n\n【0086】\n\nその後、成形体に残る磁化を小さくするため、成形体に対する脱磁処理を行う(工程(d))。\n\n【0087】\n\n最後に、例えば、ダイスを降下させることによって、成形体を金型から取り出す。\n\n【0088】\n\n(制御スイング磁界法)\n\n次に、図4(b)を参照しながら、制御スイング磁界法を説明する。以下では、前述したスイング磁界法と異なる工程(c5)のうち、主に、印加される逆磁界の大きさを中心に詳しく説明する。スイング磁界法と実質的に同じ工程(工程(c2)および工程(c4))の説明は省略する。\n\n【0089】\n\n制御スイング磁界法では、工程(c5)において、希土類合金粉末の保磁力より小さい逆磁界を印加することが重要である。先願明細書に詳しく説明したとおり、保磁力が大きい希土類合金粉末を用いた場合、その保磁力より大きい逆磁界を印加して上記のスイング\n\n磁界を行うと、逆磁界の印加前に比べて配向度を高められない場合があるが、その保磁力より小さい逆磁界を印加すると、逆磁界の印加前に比べて配向度を高められる。ただし、逆磁界の強度があまり小さくなると、合金粉末の配向状態が不充分になる。逆磁界の印加による上記作用を発揮させるためには、逆磁界の強度は、少なくとも、希土類合金粉末の保磁力よりも小さければ良く、用いられる希土類合金粉末の保磁力や合金の組成などとの関係によっても変化し得る。従って、逆磁界の強度は一義的に定めることはできないが、例えば、重希土類元素を合計で約15%含む希土類合金粉末(保磁力:約200kA/m)を用いる場合、逆磁界の強度は、おおむね、50kA/m以上180kA/m以下の範囲内にあることが好ましく、80kA/m以上150kA/m以下の範囲内にあることがより好ましい。\n\n【0090】\n\nこのような逆磁界は、希土類合金粉末の仮成形体(圧粉体)が所定の相対密度に到達した時点で、磁界発生装置によって印加する。具体的には、前述したスイング磁界法と同じようにして実行すればよい。\n\n【0091】\n\n工程(c5)では、このような逆磁界を少なくとも1回印加する。例えば、図4(b)に示すように、逆磁界を合計3回(逆磁界→正磁界→逆磁界→正磁界→逆磁界)印加してもよい。このように逆磁界を印加した後、正磁界および逆磁界を、この順序で、交互に印加するというサイクルを少なくとも1回行うことによって成形体の配向度は一層高められる。\n\n【0092】\n\nここでは、圧粉体の相対密度が所定の値に到達した後に、逆磁界を合計3回(正磁界を加えると合計5回)印加しているが、これに限定されない。本発明者の実験結果によれば、成形体の配向度を高めるためには、例えば、逆磁界を合計で5回以上(正磁界加えると合計で11回以上)印加することが好ましいことが分かった。なお、その上限は、配向度の観点からは特に限定されないが、製造効率やコストなどを考慮すると、例えば、逆磁界を合計で3回以下(正磁界を加えると合計で7回以下)印加することが好ましい。\n\n【0093】\n\n磁界は、プレス方向(パンチ移動方向)に対して直交する方向に印加する。\n\n【0094】\n\n逆磁界は、静磁界、パルス磁界のいずれも適用することができ、パルス磁界と静磁界とを重畳してもよい。\n\n【0095】\n\n次に、本実施形態に用いられる磁性粉末を説明する。\n\n【0096】\n\n本実施形態では、R-Fe-B系希土類合金が好適に用いられる。希土類合金の組成および製造方法は、例えば、米国特許第4,770,723号および米国特許第4,792,368号に記載されている。\n\n【0097】\n\nR-Fe-B系希土類合金の典型的な組成では、RとしてNd(ネオジム)が主に用いられ、Pr(プラセオジム)をさらに含有することが好ましい。そのほか、Y(イットリウム)、La(ランタン)、Ce(セリウム)、Pm(プロメチウム)、Sm(サマリウム)、Eu(ユウロビウム)、Gd(ガドリニウム)、Tb(テルビウム)、Dy(ジスプロシウム)、Ho(ホルミウム)、Er(エルビウム)、Tm(ツリウム)、Yb(イッテルビウム)、およびLu(ルテチウム)などが挙げられる。\n\n【0098】\n\nRは、Ndを主成分として含有することが好ましい。これにより、充分な磁化を得ることができる。本明細書において、「Rは、Ndを主成分として含有する。」とは、Rの総元素量に対して、Ndを、26質量%以上の範囲内で含有する(100質量%を含む)ことを意味する。\n\n【0099】\n\nRは、R-Fe-B系合金の総元素量に対して、28質量%以上32質量%以下の範囲内で含有することが好ましい。Rが28質量%未満では、α-Fe相の析出によって保磁力が低下する。一方、Rが32質量%を超えると、目的とする正方晶R2Fe14B型化合物以外にRリッチの第2相が多く析出し、磁化が低下する。\n\n【0100】\n\nFeは、R-Fe-B系合金の総元素量に対して、60質量%以上68質量%以下の範囲内で含有することが好ましい。Feが60質量%未満では、保磁力および磁化ともに低い第2相が析出するため磁気特性が劣化する。一方、Feが68質量%を超えると、α-Fe相の析出によって保磁力が低下し、角型性も低下する。Feは部分的に遷移元素(例えばCo)に置換されてもよい。\n\n【0101】\n\nBは、正方晶R2Fe14B型結晶構造を安定的に析出するために必須である。Bは、R-Fe-B系合金の総元素量に対して、1.0質量%以上1.5質量%以下の範囲内で含有することが好ましい。Bが1.0質量%未満では、R2T17相が析出するため保磁力が低下し、減磁曲線の角型性が著しく損なわれる。一方、Bが1.5質量%を超えると、磁化の小さな第2相が析出してしまう。BはCによって置換されてもよい。\n\n【0102】\n\n上記のR-Fe-B系合金は、さらに他の添加元素(M)を含んでもよく、これにより、磁気的な異方性が高められる。添加元素(M)としては、Al(アルミニウム)、Cu(銅)、Ga(ガリウム)、Cr(クロム)、Mo(モリブデン)、V(バナジウム)、Nb(ニオブ)、およびMn(マンガン)よりなる群から選択された少なくとも1種類の元素が好適に使用され得る。なお、磁気的に等方性の磁粉を得るには添加元素(M)は不要であるが、固有保磁力を高めるためにAl、Cu、Ga等を添加してもよい。添加元素(M)は、R-Fe-(M)-B系合金の総元素量に対して、0.5質量%以上1.5質量%以下の範囲内で添加されることが好ましい。Mが0.5質量%未満では、上記作用が有効に発揮されない。一方、Mが1.5質量%を超えると、強磁性ではなく第2相が析出して磁化が低下する。\n\n【0103】\n\n本実施形態において、前述した制御スイング法による配向度向上作用は、原料粉末であるR-Fe-B系合金粉末の保磁力が比較的高いときに、より顕著に発揮される。具体的には、原料粉末を嵩密度が3.0g/cm3となるように容器に充填し、試料振動型磁力計(VSM)で測定した保磁力の値を原料粉末の見掛け上の保磁力とすると、原料粉末は、おおむね、150kA/m以上の高保磁力を有することが好ましく、200kA/m以上の保磁力を有することがさらに好ましい。このためには、例えば、DyやTbなどの重希土類元素を5質量%以上含むことが好ましく、10質量%以上含むことがより好ましい。これらの元素は、単独で使用しても良いし、両方を併用しても良い。\n\n【0104】\n\n上記の希土類合金を用い、公知の方法によって希土類合金粉末を作製する。\n\n【0105】\n\n本実施形態では、例えば、ストリップキャスト(SC)法などの急冷法によって希土類合金の鋳片(鋳塊)を作製することが好ましい。急冷法によれば、組成が均一な希土類合金の鋳塊が得られる。ストリップキャスト法は、例えば、米国特許5、383、978号に開示されている。具体的には、まず、所定組成の合金を高周波溶解によって溶融し、合金溶湯を形成する。この合金溶湯を約1400℃に保持して真空中または不活性ガス雰囲気中で冷却ロール上に流し、102℃/秒〜104℃/秒の冷却速度で約700℃〜900℃の温度まで急冷し、薄帯状に凝固させて合金鋳塊を得る。\n\n【0106】\n\n次いで、合金鋳塊を、公知の方法を用いて粉砕する。具体的には、合金鋳塊を約10℃/秒〜102℃/秒の冷却速度で室温まで冷却しつつ、水素吸蔵法および/または種々の\n\n機械的粉砕法(例えば、ディスクミルが用いられる)で粉砕し、得られた粗粉末(例えば、平均粒径10μm〜500μm)を例えばジェットミルなどの粉砕機を用いた乾式粉砕法により、窒素ガス雰囲気中で微粉砕することが好ましい。\n\n【0107】\n\nこのようにして得られる希土類合金粉末の平均粒径は、磁気特性の観点から、1.5μm〜6μmの範囲内にあることが好ましい。なお、合金粉末の「平均粒径」は、特に断らない限り、ここでは、質量中位径(mass median diameter:MMD)を指す。\n\n【0108】\n\nこのような平均粒径が小さな粉末を用いると流動性やプレス成形性(キャビティ充填性および圧縮性を含む)が悪く、生産性が悪い。また、磁界中成形によって成形体を充分配向させることができず、最終的に得られる焼結磁石の磁気特性(例えば残留磁束密度)が低いという問題もある。\n\n【0109】\n\n上記の問題を回避するため、希土類合金粉末の表面は、例えば、ロッキングミキサー内でステアリン酸亜鉛やカプロン酸メチルなどの潤滑剤で被覆することが好ましい。これにより、合金粉末の酸化が防止され、更にプレス成形時における配向度や成形性(成形体の抜き出しやすさ)などが向上する。本実施形態に用いられる他の潤滑剤としては、例えば、特開平6-290919号公報、特開平8-111308号公報、特開平9-3504号公報、特開2000-109903号公報などに開示された公知の潤滑剤が挙げられる。\n\n【0110】\n\n本実施形態によれば、密度が高く、且つ、配向度の高い成形体が得られる。\n\n【0111】\n\n上記の実施形態では、焼結磁石用粉末の成形方法を示したが、希土類合金粉末と樹脂粉末とを混合したボンド磁石用粉末の成形方法にも適用することができる。\n\n【0112】\n\nまた、上記の実施形態では、ストリップキャスト法で作製されたNd-Fe-B系合金粉末を用いたが、他の方法によって製造された希土類合金粉末を用いても本実施形態の効果が得られることは言うまでもない。\n\n【0113】\n\nさらに、上記の実施形態では、合金粉末を潤滑剤で表面処理を施して用いたが、他の表面処理を施してもよく、更に、造粒粉を用いてもよい。\n\n【0114】\n\nこのようにして得られた成形体は、特に、焼結磁石として好適に用いられる。焼結方法は特に限定されず、公知の方法を採用することができる。例えば、上記の成形体に対し、不活性ガス雰囲気(希ガスや窒素ガスなど)下、約1000℃から1200℃の温度で約2時間から4時間の焼結処理を行うことができる。焼結処理を行った後、磁石の磁気特性を安定化させるため、不活性ガス雰囲気(希ガスや窒素ガスなど)中にて約500℃から800℃で約1時間から5時間の時効処理をさらに行ってもよい。\n\n【0115】\n\n本実施形態によれば、残留磁束密度の高い焼結磁石を作製することができる。\n\n【実施例】\n\n【0116】\n\n以下の実験では、下記組成の希土類合金粉末Aを用い、以下に示す、金型X、金型Pと成形条件1、2とを組み合わせて得られた各焼結体の配向角度を比較検討した。\n\n【0117】\n\n本実験において、金型Xは、本実施形態に規定する要件を満足する本発明例であり、金型Pは、ヨーク部材を備えた非磁性金型(比較例)であり、金型Xのキャビティと同じサイズのキャビティを有している。成形条件2は、前述した図4(a)に示すスイング磁界\n\n法に対応する。以下では、すべて、直角プレス法を実施した。また、プレス成形には、上下パンチでダイホール内の粉末をプレスする一軸プレス成形装置を用いた。\n\n【0118】\n\n圧粉体の相対密度は、(圧粉体の実測密度/真密度)で算出した。真密度は、約7.5g/cm3である。実測密度は、プレス成形装置のキャビティ内に充填した合金粉末の重量とキャビティの内容量とに基づいて算出した。\n\n【0119】\n\n(希土類合金粉末A)\n\nNd:23質量%、Pr:7質量%、Dy:1.2質量%、B:1質量%、Co:1質量%、残部がFeおよび不可避不純物の合金を水素粉砕によって粗粉砕した後、ジェットミルによって微粉砕した粉末Aを使用した。希土類合金粉末Aの保磁力(HCj)は約80kA/mである。\n\n【0120】\n\n(金型)\n\n金型X(本発明例):金型Xは、前述した図1に示す金型10と基本的に同一の構成を有している。詳細には、金型Xは、90mm×80mmの長方形であり、炭素工具鋼の強磁性体のみから形成された第1金型部材1と、高硬度非磁性快削鋼の非磁性体のみから形成された第2金型部材2とから構成されている。第1金型部材1と第2金型部材2とは、キャビティ3(50mm×40mmの長方形)を介して、互いに対抗するように配置されている。第1金型部材1と第2金型部材2との接合部分は、複数のボルト(不図示)で固定されている。\n\n【0121】\n\n金型P(比較例):金型Pの構成を図6に示す。金型P(90mm×80mmの長方形)の詳細な構成は、以下のとおりである。\n\n【0122】\n\nキャビティのX軸方向サイズLc:40mm\n\nキャビティのY軸方向サイズ:50mm\n\nヨーク部材123〜124のX軸方向サイズLx:40mm\n\nヨーク部材123〜124のY軸方向サイズ:7mm\n\n【0123】\n\n(成形方法)\n\n成形条件1\n\n希土類合金粉末Aに対し、希土類合金粉末の保磁力よりも大きい強度(約1200kA/m)の正磁界を印加した状態でプレスし、密度が約4.2g/cm3(相対密度は約0.56)の成形体を得た(図5を参照)。成形圧力は約30MPaであり、正磁界の印加時間は合計で15秒である。図5には、プレス工程だけでなく、脱磁処理を含めた工程における、磁界の印加時間と、磁界の強度および希土類合金粉末の相対密度との関係を示している。これは、後記する図4においても同様である。\n\n【0124】\n\n成形条件2(スイング磁界法)\n\n希土類合金粉末Aに対し、図4(a)に示すプレス方法を施した。ここで印加される正磁界および逆磁界の強度(絶対値)は、すべて、約1200kA/mであり、希土類合金粉末の保磁力よりも大きい。\n\n【0125】\n\nまず、正磁界を印加した状態で希土類合金粉末をプレスした。正磁界の印加時間は5秒である。\n\n【0126】\n\n圧粉体の密度が約3.0g/cm3(相対密度は約0.40)になった後、逆磁界、正磁界、および逆磁界を断続的に順次印加した。ここでは、逆磁界を印加した後、約1秒間停止し、その後、正磁界を印加した後、約1秒間停止する、というサイクルを行った。こ\n\nれら磁界の印加期間内における圧粉体の密度は約3.0g/cm3と一定であり、それぞれの印加時間は約2秒と一定である。\n\n【0127】\n\n最後に、圧粉体に対して正磁界を印加した状態でプレスし、密度が約4.2g/cm3(相対密度は約0.56)の成形体を得た。成形圧力は約30MPaであり、正磁界の印加時間は5秒である。一連の工程における正磁界および逆磁界の印加回数は合計5回である。\n\n【0128】\n\n(脱磁処理)\n\n成形体に対し、希土類合金粉末Aの保磁力と同程度の磁界を印加して脱磁処理を行った。\n\n【0129】\n\n(焼結方法)\n\nAr雰囲気中で約1050℃で5.5時間の焼結処理を行った後、Ar雰囲気中で約500℃で3時間の時効処理を行った。得られた焼結体のサイズは、36mm×35mm×20mmであった。\n\n【0130】\n\n(評価)\n\nこのようにして得られた各焼結体の配向方向に垂直な表面(磁極面)の片方を0.15mmまたは0.65mmほど研摩し、各研摩面にX線を照射してX線の極点図を作成し、金型方向およびプレス方向の配向角度を計算によって求めた。詳細には、微小部X線回折装置を使ってX線照射面の大きさを直径3mmに制限した状態で、図7に示すX線極点図の測定位置(A1からA3、B1からB3、C1からC3の合計9箇所)に照射して(006)極点図を測定し、強度中心方向、すなわち、配向方向が磁極面の法線方向に対して金型方向およびプレス方向に何度ずれているかを求めた。\n\n【0131】\n\n(考察)\n\n以下では、金型X(本発明例)を用い、成形条件1および成形条件2によって得られた試料を、それぞれ、本発明例1および本発明例2と呼ぶ。また、金型P(比較例)を用い、成形条件1によって得られた試料を比較例1と呼ぶ。\n\n【0132】\n\nまず、図8を参照する。\n\n【0133】\n\n図8は、磁化容易軸方向のピークを用いて作成された極点図の強度中心方向、すなわち焼結磁石の配向方向が、成形時の磁界配向方向から金型方向に何度ずれていたかを読み取った結果を示す図である。図8における配向角度の符号「+」は、図7に示す金型方向(+)へのずれを示している。図8(a)に、磁極面の片方を0.15mm研摩した研摩面の結果を、図8(b)に、磁極面の片方を0.65mm研摩した研摩面の結果を、それぞれ、示す。図8(a)および図8(b)中、「測定位置A」に、図8(a)に示す測定位置A1からA3の各配向角度をまとめて示している。「測定位置B」および「測定位置C」についても、同様である。\n\n【0134】\n\nはじめに、比較例1における配向角度について考察する。金型方向における配向角度は、図8(a)および図8(b)に示すように、試料の中央部(測定位置C1からC3)から試料表面付近(測定位置A1からA3)に向かうにつれて大きくなり、磁極面から0.15mm研摩した研摩面の試料表面付近では、約5°と最も大きくなった(図8(a)を参照)。\n\n【0135】\n\nこれに対し、本発明例の金型Xを用いた本発明例1および本発明例2では、配向角度は、配向角度の測定位置や研摩面にかかわらず、ほぼ一定であり、約1°と小さかった。\n\n【0136】\n\n次に、図9を参照する。\n\n【0137】\n\n図9は、焼結磁石の配向方向が、成形時の磁界配向方向からプレス方向に何度ずれていたかを読み取った結果を示す図である。図9における配向角度の符号「+」は、図7に示すプレス方向(+)へのずれを示している。図9(a)に、磁極面の片方を0.15mm研摩した研摩面の結果を、図9(b)に、磁極面の片方を0.65mm研摩した研摩面の結果を、それぞれ、示す。\n\n【0138】\n\n図9(a)および図9(b)より、本発明例の金型Xを用いた本発明例1および2では、試料表面付近の配向角度が比較的小さいのに対し、比較例の金型Pを用いた比較例1では、配向角度が磁界印加方向から大きくずれていることがわかる。本発明例のうち、スイング磁界法を行った本発明例2によれば、配向角度は、最大でも約5°以下に抑えられた。\n\n【0139】\n\n以上の実験結果より、本実施形態の要件を満足する金型を用い、好ましくは、スイング磁界法を行うと、金型方向およびプレス方向における配向角度のズレを小さくできることが分かった。\n\n【0140】\n\n本実験では、保磁力の比較的低い磁性粉末を用いた実験結果を示したが、保磁力が大きい磁性粉末(例えば、約150kA/m以上)を用いた場合にも同様の結果が得られると考えられる。\n\n【0141】\n\nまた、前述した図4(b)に示す制御スイング磁界を用いて粉末成形体を製造すると、配向角度のズレをより抑えられることを実験によって確認している。\n\n【産業上の利用可能性】\n\n【0142】\n\n本発明の製造方法によって得られた粉末成形体は、配向角度のズレが小さいため、磁気特性に優れた永久磁石を製造するのに好適に用いられる。このようにして得られた永久磁石は、例えば、モーター、センサーなどに活用され得る。\n\n【図面の簡単な説明】\n\n【0143】\n\n【図1】本発明の実施形態に用いられる金型10の斜視図である。\n\n【図2】圧粉体の相対密度が約0.4以上の相対密度に到達した状態で配向磁界が印加されたときにおける、当該磁性粉末と金型との関係を模式的に示す図であり、(a)は本発明例であり、(b)および(c)は比較例である。\n\n【図3】金型の上面から磁束の流れを観察したときの模式図であり、(a)は本発明例、(b)は比較例、(c)は従来例である。\n\n【図4】本実施形態におけるプレス工程の好ましい態様を示す工程図であり、(a)は、磁性粉末がプレスされて所定の相対密度に到達した後に、第1方向と逆向きに、磁性粉末の保磁力より大きい第1の逆磁界を少なくとも1回印加する工程を含む工程図、(b)は、磁性粉末がプレスされて所定の相対密度に到達した後に、第1方向と逆向きに、磁性粉末の保磁力より小さい第1の逆磁界を少なくとも1回印加する工程を含む工程図である。\n\n【図5】成形条件1において、磁界の印加時間と、磁界の強度および希土類合金粉末の相対密度との関係を示す図である。\n\n【図6】本発明の実施例の欄に記載された金型P(比較例)の構成を示す斜視図である。\n\n【図7】本発明の実施例において、X線極点図の測定位置を示す図である。\n\n【図8】焼結体の配向方向が、成形時の磁界配向方向から金型方向に何度ずれていたかを読み取った結果を示す図であり、(a)は、磁極面の片方を0.15mm研摩した研摩面の結果を、(b)は、磁極面の片方を0.65mm研摩した研摩面の結果を示している。\n\n【図9】焼結体の配向方向が、成形時の磁界配向方向からプレス方向に何度ずれていたかを読み取った結果を示す図であり、(a)は、磁極面の片方を0.15mm研摩した研摩面の結果を、(b)は、磁極面の片方を0.65mm研摩した研摩面の結果を示している。\n\n【符号の説明】\n\n【0144】\n\n1    第1金型部材\n\n2    第2金型部材\n\n3    ダイホール\n\n4    ダイホールの内面\n\n5    キャビティ\n\n6    磁性粉末(圧粉体)\n\n7    上パンチ\n\n7a  上側加圧面\n\n8    下パンチ\n\n8a  下側加圧面\n\n9    配向磁界\n\n10  金型\n\n11、12  強磁性部材\n\n13  磁束\n\n14、15  磁極面\n\n16、17  ヨーク部材\n\n18  強磁性部材\n\n19  非磁性体部材\n\n20  金型\n\n120  金型\n\n123〜124  ヨーク部材', '【技术领域】\n\n【0001】\n\n本发明涉及一种制造粉末成型体的方法,更具体地涉及一种用于制造适合于烧结磁体的稀土合金粉末成型体的方法。\n\n发明背景\n\n【0002】\n\n用于生产各种部件的粉末成型体是通过压制诸如陶瓷或金属粉末的粉末材料而形成的。粉末模塑产品例如在高温下烧结之后的最终部分,以及用于调节烧结体的尺寸和外形的精加工方法。\n\n【0003】\n\n通常,粉末成型体的质量影响烧结体的质量(例如,物理性质和轮廓)。因此,已经根据施用研究了各种压制成型方法,以获得高质量的粉末成型体。\n\n【0004】\n\n例如,使用稀土合金的烧结磁体如下制造。\n\n【0005】\n\n(1)将原料金属溶解在高温下,得到预定组合物的稀土合金质量。\n\n【0006】\n\n(2)该合金质量采用地研磨,得到微小稀土合金粉末(平均粒径:几μm)。\n\n【0007】\n\n(3)将所得合金粉末压制在磁场中(下文中有时称为“磁场形成方法”)以获得预定的形状的成型体。合金粉末根据需要在表面上设有润滑剂。\n\n【0008】\n\n(4)模塑体在高温(例如约1000℃以上)处烧结以获得烧结磁体。\n\n【0009】\n\n(5)进一步进行称为老化过程的热处理以增加所得烧结磁体的磁性。\n\n【0010】\n\n(6)抛光烧结磁体的表面,调节尺寸和形状。\n\n【0011】\n\n上述(3)的磁场形成方法是一种并行性方法,其施加与压力方向(压缩方向)平行于压力方向(压缩方向)的定向磁场和直角,以根据垂直于压力方向的方向施加定向磁场。定向磁场的施加方向。大致分为压力机。根据正交压力方法,由于可以按下由定向磁场对准的磁化容易轴而不破裂,因此与平行压制方法相比,获得具有更高各向异性的磁体。\n\n【0012】\n\n为了生产磁性优异的稀土磁铁,重要的是在压模时均匀地定向稀土合金粉末。例如,通过切出通过直角压力法获得的模制体制造的VCM磁体具有诸如磁性特性的变化,例如由于模制体的对准角度而导致的磁性磁通密度的变化。。\n\n【0013】\n\n已经提出了许多压模方法,以提高稀土合金粉末成型体的取向程度。\n\n【0014】\n\n例如,专利文献1是一种压制装置,其中由铁磁材料形成的多个磁轭构件设置在非磁性模具中的多个空腔和磁场发生器之间。具有优化尺寸和排列的压力装置耶咽成员被披露。通过使用该压力机,由于可以制造多个空腔中的对准磁场的分布,因此可以制造在烧结之后不会引起翘曲,破裂,碎裂等的稀土合金粉末磁体。\n\n【0015】\n\n公开了一种制造具有非常小值的永磁体的制造方法。特别地,在原料粉末进行CIP之前,专利文献2是约0.4吨/厘米。2从4t / cm2描述在相对低压(约39MPa至390MPa)下施加定向磁场的方法。这里,为了消除腔端处的磁场的不均匀性,在模具中突出了构成腔的一部分的非磁性模具构件的突出部分。\n\n专利文献1:JP-A-2002-47503(NeoMax)\n\n[专利文献2]日本专利申请公开号2-146705(日立金属)\n\n发明的描述\n\n本发明要解决的问题\n\n【0016】\n\n近年来,在用于无知器或半导体制造装置的线性电动机的磁体中,\n\n较多且更努力地要求磁铁中磁化的方向容易轴线是均匀的。然而,上述专利文献1中描述的新闻设备可能无法应对这样的请求。\n\n【0017】\n\n在专利文献2中公开的方法中,由于组合使用直角按方法和CIP,因此还存在诸如设备变大的问题,并且该过程变得复杂,并且不适合质量生产率。此外,在该方法中,需要制备配备有预定突出部分的模具。\n\n【0018】\n\n本发明已经鉴于上述点,其主要目的是粉末成型体的取向程度而不使用特殊的模具或CIP而增加,并且优异的磁特性本发明的目的是提供一种制造粉末成型体的方法,其能够提供永磁体。\n\n[解决问题的手段]\n\n【0019】\n\n根据本发明的粉末成型体的制造方法测量制备磁粉的步骤(a)和将磁粉填充到腔中的步骤(b),并且磁粉填充有腔的腔。a粉末模制体包括通过在一对加压表面之间的z轴方向上通过单轴压制形成模制体的步骤(c),以及用于执行退磁过程的步骤(d)。在制造方法中,腔腔被组成设置在模具中的模孔,并且模具由由铁磁体和非磁体形成的第一模具构件形成。包括两个壁构件,并且步骤(c)包括步骤(c1)在与Z轴方向正交的第一方向上施加定向磁场,并且取向磁场至少填充在腔中。当达到约0.4或更大的相对密度时,按下并施加磁粉。与腔的对准磁场相交的表面是第一模具构件的表面。\n\n【0020】\n\n在一个优选的实施方案中,铁磁性材料的饱和磁化强度为约1.5吨以上,并且铁磁材料的矫顽力为6.4ka / m或更小。\n\n【0021】\n\n在一个优选的实施方案中,作为磁性粉末,RT-(M)-B基合金粉末(R是含有Y的稀土元素,T是Fe或Fe和Co,M是添加元素的混合物,B是硼使用)。\n\n【0022】\n\n在一个优选的实施方案中,使用淬火方法生产R-T-(M)-B基合金粉末。\n\n【0023】\n\n在一个优选的实施方案中,步骤(c)是在按压并达到磁性粉末之后施加第一正磁场在第一正磁场施加第一正磁场的状态下施加第一正磁场的状态的步骤通过在第一方向(C3)中至少一次施加第一逆磁场,并且处理(C3)通过具有第二正磁场的第二正磁场压下步骤(C4)来获得预定的相对密度。大于第一方向和磁粉的磁粉的矫顽力。\n\n【0024】\n\n在一个优选的实施方案中,步骤(C3)中的预定相对密度在0.2或更大和0.5或更小的范围内。\n\n【0025】\n\n在一个优选实施例中,施加大于第一方向(C3)和步骤(C4)的磁粉的矫顽力的第三正磁场的步骤(e),以及进一步包括步骤(f)的过程将第二反向磁场沿相反方向施加到第一方向。\n\n【0026】\n\n在一个优选的实施方案中,从步骤(e)重复步骤(f)。\n\n【0027】\n\n在一个优选的实施方案中,步骤(c3)和步骤(f)在磁性粉末的相对密度保持基本恒定的状态下进行。\n\n【0028】\n\n在一个优选实施例中,步骤(C3)中的第一逆磁场大于磁粉的矫顽力。\n\n【0029】\n\n在一个优选实施例中,步骤(C3)中的第一逆磁场小于磁粉的矫顽力。\n\n【0030】\n\n在一个优选的实施方案中,步骤(a)中使用的磁性粉末的矫顽力为150ka / m或更高。\n\n【0031】\n\n根据本发明的制造烧结体的制造方法包括通过制造粉末成型体的方法制造模塑体的步骤;并烧结模塑体。\n\n【发明效果】\n\n【0032】\n\n根据本发明,由于可以在不使用特殊模具或CIP的情况下制造具有小设置对准角的模制品,所以可以制造磁特性优异的永磁体。\n\n实施本发明的最佳方式\n\n【0033】\n\n发明人已经考虑了一种简单的方法,用于提供一种能够产生具有对准角度的小布置的模制体的简单方法。结果,使用其中铁磁构件设置在预定位置的模具,优选地,当使用后面描述的摆动方法或控制摆动方法在磁场中进行模塑时,实现所需的目的。本发明具有已经完成。\n\n【0034】\n\n在本说明书中,在稍后描述的实施方案的列中详细使用“对准角度的未对准”,并在烧结体的磨料表面上使用X射线,并且使用磁化轴方向上的峰值。这意味着在模制时产生的极点图的强度中心方向之间的偏差角在成型时的对准角度和磁场对准方向之间的位移角度被抑制到大约5°或更小。\n\n【0035】\n\n(实施例)\n\n在下文中,将参考附图描述根据本发明的制造粉末成型体的方法的实施例。\n\n【0036】\n\n本实施例的制造方法是制备磁粉的步骤(a)和将磁粉填充到腔(b)中的步骤(b)和填充在腔中的一对磁粉。步骤( C)用于形成模塑主体和步骤(D),其通过在压力表面之间的Z轴方向上是不逐渐压制的,该步骤(D)在压力表面之间的Z轴方向上进行压制。步骤(c)包括磁场形成步骤,其在与Z轴方向正交的第一方向上施加定向磁场(压力方向)。磁场形成步骤包括步骤(C1),在该步骤(C1),在该步骤(C1),其填充在腔体中以达到约0.4或更大的相对密度(=测量密度/真密度)。\n\n【0037】\n\n在本实施例中,在步骤(C1)中,与腔的定向磁场交叉的表面的特征在于,它是由铁磁材料形成的第一模具构件的表面。换句话说,根据本实施方案的制造粉末成型体的方法的特征在于,使用满足这种要求的模具形成在磁场中。如将详细描述的,根据本实施例,由于铁磁材料设置在粉末成型体的一部分(粉末成型体的杆部分)中,其由于电磁场引起的磁通量的大部分湍流,因此可以抑制模塑主体的取向角。此外,根据本实施例,可以获得粉末成型体,其中取向程度仅通过压制成形而不使用CIP来增强。\n\n【0038】\n\n(模具)\n\n将参考图1和图2描述本实施例中使用的模具(管芯)10的结构。1和2。根据本实施例,即使使用具有图1所示的简单结构的模具。使用图1,可以制造其取向角的位移的烧结体(参见稍后描述的示例)。\n\n【0039】\n\n如图1所示。如图1所示,模具10由一对第一模具构件1和一对第二模具构件2组成。模具10设置有穿透垂直方向的开口(管孔)3。任意内部产品的腔5由下侧冲头(图2中的8)中的下冲头(8)限定,并且将完成模具孔3中的下冲头(8)。在图1中。参照图1和图2.如稍后描述的图2所示,模制体的压力方向由Z轴和定向磁场的施加方向的X轴表示。 X轴与Z轴正交。\n\n【0040】\n\n如图1所示。如图1所示,一对第一模具构件1和一对第二模具构件2全部布置成通过腔5彼此面对。如图1所示。如图2所示,第一模具构件1包括铁磁构件11和12。第二模具构件2由非磁性材料形成。\n\n【0041】\n\n图2示出了当取向磁场9施加在填充在腔体中的磁性粉末6被压制并且达到约0.4或更高的相对密度的状态时磁粉6和模具10之间的关系。它是示意性地示出的图。在下文中,将磁粉施加到磁粉上,并且获得最终模塑体之前的磁粉可以称为“压力粉末”或“临时形式”。 “粉末”或“临时形式”还包括那些不能在腔中所取出的状态下保持形状的那些。图。图2A示出了满足本实施例的要求的示例。图2(b)和2(c)是不满足本实施例的要求的示例。\n\n【0042】\n\n如图1所示。如图2A所示,与第一模具构件1的铁磁构件11和12的表面相交的表面与第一模具构件1的表面接触。换句话说,在本实施例中,当压力粉末6的相对密度为约0.4或更高时,穿过粉末6的所有取向磁场9穿过铁磁构件11和12,以便穿过铁磁体成员11和12.完成了。\n\n【0043】\n\n另一方面,图1和图2中所示的方法。图2(b)和2(c)不包括在本实施例的范围内。根据图。如图2(b)和2(c)所示,穿过粉末6的定向磁场9的一部分通过铁磁构件11和12,但否则通过粉末6这是因为对准磁场9 \'不会穿过铁磁构件11和12。\n\n【0044】\n\n这意味着以下。在本实施例中,当至少轮询粉末的相对密度达到约0.4或更大时,施加定向磁场。在这种状态下,压力和第一模具构件的模具部分一切意味着形成铁磁性材料。在本实施例中使用的模具可以满足上述要求,并且可以在不对不对影响方向角的偏差的极限处包括各种修改。在本实施例中,例如,专利文献2中描述的预定突出部分可以设置在模具中。\n\n【0045】\n\n铁磁构件11和12与第一模具的比率优选地优选地更高,以使磁场均匀地使成型体的对准角度较小。第一模具构件可以仅由铁磁材料形成。\n\n【0046】\n\n第二模具构件2可以包含铁磁性材料,并且可以仅由铁磁材料形成。另外,诸如模具构件的粘合部分的装置可以用螺栓固定,以增加结部分的强度。\n\n【0047】\n\n当使用图1所示的模具10时,可以抑制对准角度的位移(参见稍后描述的示例),与设置有上述专利文献1中公开的轭构件的模具相比(参见稍后描述的示例)。在下文中,将参考图4描述该原因。\n\n【0048】\n\n图。图3A和3B是当从上表面观察两种类型的模具X和Y中的磁通量时的示意图。模具X是本发明的一个例子,并在后面描述的实施例中使用。模具Y是专利文献1中描述的比较例的模具。作为参考,图3(c)中示出了由非磁体19形成的常规模具Z中的磁通量的流动。\n\n【0049】\n\n如图1所示。如图3C所示,在传统示例的模具Z中,由于磁性粉末6中的磁性粉末6中的磁场6的影响,磁通量13在磁极表面14和15处在磁极表面14和15上倾斜5.因此,在使用模具Z制造的模塑制品中,对准角的偏差增加。\n\n【0050】\n\n另一方面,在比较示例的模具Y中,由于多个磁轭构件16和17设置在多个磁轭构件16和17的尺寸中,使得腔5中定向磁场的分布可以均匀控制,磁通量几乎没有干扰(见图3(b))。\n\n【0051】\n\n根据本发明的模具X,由于铁磁构件18设置在包括负磁场的部分的宽面积中,因此提供了铁磁构件18,从而可以进一步抑制磁通量的湍流(见图3A)。\n\n【0052】\n\n接下来,使用模具X和本发明的比较例的模具Y制备的每个模制体的磁通密度分布的变化(标准偏差,σn) 我检查了。\n\n【0053】\n\n模塑体的制备条件如下。粉末密度:4.2g / cm 23定向磁场取向:X轴方向(按方向垂直),取向磁场强度:1.5 T,磁粉填充:170g,压力:306千克/厘米22(大约30 MPa)\n\n【0054】\n\n结果,在使用比较例的模具Y产生的模塑体中,磁通密度分布的变化。n大约0.029,但是使用本发明的模具X,模塑体的磁通密度分布的变化。n事实证明,它变得小于0.016。\n\n【0055】\n\n在本说明书中,优选用于铁磁构件的铁磁材料满足以下要求。\n\n【0056】\n\n首先,在4π的饱和磁化物的饱和磁化优选为约1.5吨以上。这降低了模塑体的方向的干扰。尽管从减少模塑体的取向的干扰的观点来看,上限没有特别限制,但是通常是2.4T是优选的。\n\n【0057】\n\n此外,铁磁性的矫顽力(HCj优选地,它是6.4ka / m或更小。结果,在从模具中从模具中除去模制体之后,抑制了模具的模具残留磁性(在模具表面中心部分的磁通密度评价)抑制在模具的铁磁部分中。因此,如在现有技术中,没有必要在模制体和模具上进行去除处理,并且可以容易地从模具中检索模制体。其下限没有特别限制,并且可以大于0ka / m。\n\n【0058】\n\n作为满足这些要求的铁磁性材料,例如,可以提及碳工具钢(JIS SK3等效材料)等。这些可以单独包含或两种以上组合含有。\n\n【0059】\n\n本实施方案中使用的非磁性材料的实例包括高硬度非磁性冷冻钢(HPM75,非磁性高锰钢等)。\n\n【0060】\n\n模具10的硬度优选尽可能高。由于在模塑进入腔时磁粉的粉末,这抑制了模具的损坏。在锁上的硬度中,模具10的硬度优选为约40小时或更高。\n\n【0061】\n\n(磁磁法方法)\n\n在本实施例中,上述压制步骤(c)是在压力机(z轴)上与磁粉6正交的第一方向(x轴)上的磁粉的矫顽力大的第一正磁场。按下待施加的步骤(C2)的步骤,并且磁粉6以反向向第一方向(C3)反向达到至少一个第一反向磁场的预定相对密度(C3),并且尊重通过步骤(C3)获得的磁粉6,可以包括步骤(C4),该步骤(C4)以大于第一方向的磁性粉末6的矫顽力大的第二正磁场压。优选的。\n\n【0062】\n\n在下文中,将参考图4和图5详细描述本实施例中的按压过程的优选方面。图4(a)和4(b)。在下文中,为了便于说明,图4A中所示的方法被称为“摆动磁场方法”,并且图4B中所示的方法包括:图4B中所示的方法可以被称为“控制摆动磁场法”。图。图4A对应于稍后描述的示例列中描述的模制条件2。\n\n【0063】\n\n如图1和图2所示。如图4A和4B所示,摆动磁场法和控制摆动磁场法在磁粉的相对密度在预定范围内,优选地在密度保持的状态下基本恒定地,施加取向磁场,并恰好地施加正磁场和逆磁场。在下文中,在稍后描述的步骤(C2)中施加的磁场被称为“正磁场”,并且相反方向上的磁场被称为“反向磁场”。\n\n【0064】\n\n摆动磁场法和控制摆动磁场方法主要在应用于民意调查的逆磁场的大小中。在摆动磁场方法中,如图2所示。如图4A所示,施加到推测器的正磁场的强度(绝对值)和反向磁场的强度(绝对值)是相同的,并且来自磁性粉末的矫顽力也设定为更大。\n\n【0065】\n\n另一方面,在控制摆动磁场方法中,如图2所示。如图4B所示,施加到极的逆向磁场的强度(绝对值)被设定为小于磁粉的矫顽力。ING。\n\n【0066】\n\n如果采用控制摆动磁场法,则与摆动磁场法相比,可以以高取向制造具有高对准程度的粉末模制体。当使用矫顽力的顽固性合金粉末,特别是使用约150ka / m或更高的稀土合金粉末特别显着表现出这种效果。此外,本申请的申请人已经使用控制摆动磁场法制造粉末成型体的过程,并且专利申请完成(日本专利申请No.2005-157562,下文中,以下称为先验规范)。)。在先前申请的实施方案的塔中,当在粗矫顽力的矫顽力的矫顽力为约200ka / m时,模塑主体的取向程度而不施加脉冲磁场时。演示加强。\n\n【0067】\n\n(摆动磁场法)\n\n将参考图4(a)描述摆动磁场方法。\n\n【0068】\n\n首先,将描述本实施例中的压制成型方法。稍后将描述制备稀土合金粉末的方法。\n\n【0069】\n\n首先,相对于稀土合金粉末,第一正磁场施加大于稀土合金粉末的矫顽力,并压制直至该过程中定义的预定相对密度(0.2或更低0.5或更小)(C3达到)。(步骤(c2))。该方法(C2)是合金粉末在一定程度上取向的那个\n\n它可以通过该方法压制在磁场中,并且没有特别限制。施加的磁场可以应用于任何静态磁场和脉冲磁场,并且静态磁场和脉冲磁场可以叠加。这里,脉冲磁场是指在0.5毫秒或更高的时间和10毫秒或更小的时间达到最高磁场强度的磁场。\n\n【0070】\n\n对于压模,可以使用已知的压制成形装置,不同之处在于使用模具。通常,使用用于将粉末压在模腔(管孔)中的单轴压制成形装置,其具有垂直冲头。\n\n【0071】\n\n具体地,例如,一对垂直冲头插入设置在模具上的管孔(通孔)中以压紧并被按压。由模孔和下冲头的上表面(加压表面)形成的腔填充有合金粉末。\n\n【0072】\n\n合金粉末的填充以各种已知方法进行。例如,使用馈线使用馈线盒使用自合金粉末的填充方法是方便的,优选的。使用该方法,腔中的适当表观密度(例如1.5克/厘米3〜2.5克/厘米3可以用合金粉末装。另外,在填充腔中的合金粉末之后,例如,如果通过沿着模具的表面移动滑动杆等除去过量合金粉末,则填充在腔中的合金粉末的量几乎是恒定的。可以办到。例如,可以适当地使用日本专利公开No.2001-9595中描述的打桩方法。\n\n【0073】\n\n接下来,通过升高和降低上冲头和/或下冲头,腔中的合金粉末是第一轴压制。通常,上冲头可以降低,但是可以降低上冲头并且可以增加更低的冲压。\n\n【0074】\n\n磁场的施加方向垂直于压力方向(冲头移动方向)。\n\n【0075】\n\n模塑压力根据所使用的稀土合金的类型和压制成形装置的类型等而不同,但优选在20MPa或更大和120MPa或更小的范围内。通常,随着模塑压力低,成型体的对准程度得到改善,但如果模制压力太低,则模塑体的强度不足,并且存在诸如变得难以处理的问题。\n\n【0076】\n\n接下来,在稀土合金粉末被压制并达到相对密度(优选0.2或更高0.5或更低)之后,优选地,稀土合金粉末的矫顽力优选地保持几乎恒定。磁场处理包括至少一个大首先执行第一后磁场(步骤(C3))。\n\n【0077】\n\n在摆动磁场方法中,在步骤(C3)中,施加大于稀土合金粉末的矫顽力的逆磁场。结果,与不施加反向磁场的情况相比,顽固地的稀土合金的取向程度增加了约150ka / m或更小。为了通过施加反向磁场施加上述作用,逆磁场的强度至少高于稀土合金粉末的矫顽力,并且稀土合金粉末的矫顽力之间的关系和合金的组成。它也可能改变。因此,尽管逆向磁场的强度不能唯一确定,但是当使用稀土合金粉末时(矫顽力:约100ka / m),逆磁场的强度通常为500ka / m或更多的2000 ka / m或更低,优选在范围内\n\n【0078】\n\n当稀土合金粉末的异质形状(粉末粉末)达到预定的相对密度时,通过磁场发生器施加这种逆磁场。当当轮询体的相对密度为低时施加反向磁场时,随着压力粉末的相对密度增加,粉末颗粒的取向受到干扰。因此,最终获得的模塑主体中粉末颗粒的取向程度可能不够。同时,粉末粉\n\n即使逆向磁场以高相对密度施加,各个粉末颗粒也不能改变方向。具体地,调查粉末的相对密度优选为0.2或更高,0.5或更低,更优选在0.3以上且0.4以下的时间点。\n\n【0079】\n\n逆磁场优选地施加花粉的相对密度基本恒定并施加。当施加较差的磁场同时增加轮询粉末的相对密度时,可以降低投刷件的取向程度。\n\n【0080】\n\n在步骤(C3)中,至少一次施加这样的逆磁场。例如,如图2所示。如图4A所示,逆磁场可以施加三次(反向磁场→正磁场→反向磁场→正磁场→反向磁场)。在以这种方式施加反向磁场之后,通过执行依次交替施加正磁场和逆磁场的至少一个循环来进一步增强模制体的对准程度。\n\n【0081】\n\n这里,在压力粉末的相对密度达到预定值之后,施加逆磁场三次(当添加正磁场时,总计5次),但是本发明不限于此。根据本发明人的实验结果,为了提高模塑体的对准程度,理解,例如,逆磁场优选为5或更多(阳性时总共超过11倍以上磁场被添加)米场。尽管从取向程度的观点来看,上限没有特别限制,但是,施加反向磁场,例如,三个或更少(如果添加正磁场),例如,反向磁应用领域。它是优选的。\n\n【0082】\n\n磁场沿与压力机(冲头移动方向)正交的方向施加。\n\n【0083】\n\n在逆磁场中,可以施加任何静态磁场和脉冲磁场,并且可以叠加脉冲磁场和静态磁场。\n\n【0084】\n\n如步骤(c3)所限定的,控制上冲头和/或下冲头的行程,以确保施加在预定范围处施加反向磁场的操作。并且优选停止上冲头的行程当以预定密度达到临时形式的密度时和/或更低的冲击。由此,进一步增强了取向度。\n\n【0085】\n\n接下来,通常按压最终模塑体的相对密度,从而施加第二正磁场,其大于稀土合金粉末的矫顽力(步骤(C4))。步骤(C4)的过程方法如上所述的步骤(C2)中所述。\n\n【0086】\n\n此后,为了减少剩余的磁化,在模制体中,执行相对于模制体的去磁处理(步骤(d))。\n\n【0087】\n\n最后,例如,通过降低模具,从模具中取出模制体。\n\n【0088】\n\n(控制摆动磁场法)\n\n接下来,将参考图4描述控制摆动磁场方法。4(b)。在下文中,在与上述摆动磁场方法不同的步骤(C5)中,主要是,主要描述要施加的逆向磁场的大小。省略了摆动磁场法的描述(步骤(C2)和处理(C4))。\n\n【0089】\n\n在控制摆动磁场法中,重要的是在步骤(C5)中施加小于稀土合金粉末的矫顽力的逆向磁场。如在现有申请说明书中详细描述的,当使用具有大矫顽力的稀土合金粉末时,将比其矫顽力大的逆磁场应用于上述摆动\n\n当执行磁场时,与逆磁场的应用相比,取向程度可能不会增加,但是当施加小于矫顽力的逆磁场时,与应用相比,取向程度增加逆向磁场。然而,当逆磁场的强度小时,合金粉末的对准状态不足。为了通过施加逆磁场施加上述作用,逆磁场的强度至少小于稀土合金粉末的矫顽力,以及稀土合金的矫顽力之间的关系使用的粉末和合金的组成。它也可以改变取决于。但是,尽管逆向磁场的强度不能唯一地确定,但是当使用含有约15%重稀土元素的稀土合金粉末(矫顽力:约200ka / m)时,尽管含有约15%的重稀土元素的强度,但是逆磁场是优选在50ka / m以上且180ka / m以下的范围内,更优选在80ka / m以上且150ka / m或更小的范围内。\n\n【0090】\n\n当稀土合金粉末的异质形状(粉末粉末)达到预定的相对密度时,通过磁场发生器施加这种逆磁场。具体地,可以以与上述摆动磁场方法相同的方式执行。\n\n【0091】\n\n在步骤(c5)中,至少施加这样的逆磁场。例如,如图2所示。如图4B所示,逆磁场可以施加三次(反向磁场→正磁场→反向磁场→正磁场→反向磁场)。在以这种方式施加反向磁场之后,通过执行依次交替施加正磁场和逆磁场的至少一个循环来进一步增强模制体的对准程度。\n\n【0092】\n\n这里,在压力粉末的相对密度达到预定值之后,施加逆磁场三次(当添加正磁场时,总计5次),但是本发明不限于此。根据本发明人的实验结果,为了提高模塑体的对准程度,理解,例如,逆磁场优选为5或更多(阳性时总共超过11倍以上磁场被添加)米场。尽管从取向程度的观点来看,上限没有特别限制,但是,施加反向磁场,例如,三个或更少(如果添加正磁场),例如,反向磁应用领域。它是优选的。\n\n【0093】\n\n磁场沿与压力机(冲头移动方向)正交的方向施加。\n\n【0094】\n\n在逆磁场中,可以施加任何静态磁场和脉冲磁场,并且可以叠加脉冲磁场和静态磁场。\n\n【0095】\n\n接下来,将描述本实施例中使用的磁粉。\n\n【0096】\n\n在本实施方案中,优选使用R-Fe-B基稀土合金。稀土合金的组合物和制造方法描述于例如美国专利No.4,522,517中。No.4,770,723和4,792,368。\n\n【0097】\n\n在典型的R-Fe-B基稀土合金组合物中,Nd(钕)主要用作R,优选进一步含有Pr(镨)。此外,y(钇),la(灯),ce(铈),pm(胰岛),sm(钐),欧盟(eybium),gd(gadolinium),tb(铽),dy(dysprocium),ho(holmium) )ER(erbium),TM(TM),YB(迭代)和LU(卢特雷卢)。\n\n【0098】\n\nR优选包含在Nd中作为主要成分。这使得可以获得足够的磁化。如本文所用,“R含有Nd作为主要成分”,相对于R的总量,含有在26质量%以上的Nd以内的Nd。\n\n【0099】\n\nR优选含有在28质量%以上的范围内,相对于R-Fe-B基合金的总量为28质量%或更多和32质量%。如果R小于28质量%,则通过α-Fe相的沉淀降低矫顽力。另一方面,当R超过32质量%时,目标平方晶r2Fe.14除了B型化合物之外,R的第二阶段还大,磁化减少。\n\n【0100】\n\n对于R-Fe-B基合金的总量,该Fe优选含有60质量%以上和更高,68质量%的范围。如果Fe小于60质量%,则磁特性降低,因为对于矫顽力和磁化沉积物的第二相低相。另一方面,当Fe超过68质量%时,由于α-Fe阶段的沉淀,矫顽力降低,并且该直列度也降低了。 Fe可以由过渡元件(例如,CO)部分替换。\n\n【0101】\n\nB是挤压率2Fe.14必须稳定地沉淀B型晶体结构。对于R-Fe-B基合金的总量,B优选含有1.0质量%以上或更高,1.5质量%以下的范围内或更小。如果b小于1.0%质量,则2T.17由于相沉积物,矫顽力降低,并且消失曲线的大致性显着受损。另一方面,当B超过1.5质量%时,磁化沉积物的第二阶段较小。 B可以由C取代。\n\n【0102】\n\n上述R-Fe-B基合金可进一步包含其他添加剂元素(M),其增强磁各向异性。添加剂元素(m)由Al(铝),Cu(铜),Ga(镓),Cr(铬),钼(钼),v(钒),Nb(铌)和Mn(锰)组成至少一个可以适当地使用从组中选择的元素。另外,尽管可以添加添加元素(m)以获得磁各向同性磁性粉末,但可以加入Al,Cu,Ga等以增加本质矫顽力。相对于R-Fe-(M)-B基合金的总量,优选在0.5质量%以上和1.5质量%或更低的范围内加入添加剂元件(m)。如果m小于0.5质量%,则上述作用无效。另一方面,当M超过1.5质量%时,第二相被沉淀而不是铁磁性,并且减少了磁化。\n\n【0103】\n\n在本实施例中,当作为原料粉末的R-Fe-B合金粉末的矫顽力相对较高时,更明显地表现出上述控制摆动方法的对准程度。具体地,原料粉末的散装密度为3.0g / cm3当通过样品振动型磁力计(VSM)测量的矫顽力的值填充在容器中时,原料粉末大致高150ka / m或更高的张紧功率大致高。它优选具有,更优选具有200ka / m或更高的矫顽力。为此目的,例如,优选含有5质量%或更多的重度假村地球元素,例如Dy或Tb,更优选为10质量%以上。这些元素可以单独使用或组合使用。\n\n【0104】\n\n使用上述稀土合金,通过已知方法生产稀土合金粉末。\n\n【0105】\n\n在本实施例中,优选通过诸如条带铸造(SC)方法的淬火方法制造稀土合金的铸件(铸锭)。根据淬火方法,获得具有均匀组成的稀土合金的铸锭。条带铸造方法例如在美国专利No.5,199,080中公开。美国专利号5,383,978。具体地,首先,通过高频溶解熔化预定组合物的合金以形成合金熔融金属。合金熔融金属保持在约1400℃,并在真空或惰性气体气氛中在冷却辊上流动,102°C / s至104以℃/℃的冷却速率在约700℃至900℃的温度下淬灭。,在层面板带中凝固以获得合金锭。\n\n【0106】\n\n然后使用已知方法研磨合金锭。具体地,约10°C / s至10°C / s 10°C2在冷却速率的冷却速率下冷却至室温,储氢方法和/或各种\n\n使用诸如喷射机的破碎机(例如,使用圆盘研磨机),并使用诸如喷射机的破碎机进行干磨法,进行所得粗粉(例如,平均粒径为10μm至500μm)进行,氮气在大气中优选在大气中进行细化。\n\n【0107】\n\n从磁性特性的观点来看,以这种方式获得的稀土合金粉末的平均粒径优选为1.5μm至6μm。注意,除非另有说明,否则合金粉末的“平均粒径”是指本文的质量介质直径(MMD)。\n\n【0108】\n\n当这种平均粒径小时,流动性和压制成形性(包括腔填充和压缩性)差,生产率差。此外,还存在通过通过磁场的模制品不能充分定向的模制体的问题,以及烧结磁体的磁特性(例如,残留的磁通密度)低。\n\n【0109】\n\n为了避免上述问题,稀土合金粉末的表面优选涂覆有润滑剂,例如硬脂酸锌或锁定混合器中的锌己酸。结果,防止了合金粉末的氧化,并改善了压制成型时的取向程度和成形性(模塑体的易于提取)。作为该实施例中使用的另一个润滑剂,例如,公开了日本专利公开No.6-290919,JP-A-8-111308,JP-A-9-1903,JP-A-2000-109903等。提到了已知的润滑剂。\n\n【0110】\n\n根据本实施例,获得具有高密度并具有高取向度的模塑制品。\n\n【0111】\n\n尽管在上述实施例中示出了形成用于烧结磁体的粉末的方法,但是也可以应用于模塑与稀土合金粉末和树脂粉末混合的粘合磁体粉末的方法。\n\n【0112】\n\n此外,在上述实施方案中,使用由条带铸造方法产生的Nd-Fe-B基合金粉末,但即使使用另一种方法产生的稀土合金粉末,也可以获得本实施方案的效果。不言而喻。\n\n【0113】\n\n此外,在上述实施方案中,尽管通过用润滑剂的表面处理使用合金粉末,但可以进行其他表面处理,并且可以使用粒状粉末。\n\n【0114】\n\n由此获得的模制体特别优选用作烧结磁体。烧结方法没有特别限制,可以采用已知方法。例如,在惰性气体气氛(惰性气体或氮气)下,烧结过程可以在约1000℃至1200℃的温度下在约1000℃至1200℃的温度下进行。 。在进行烧结过程之后,为了稳定磁体的磁性,在惰性气体气氛(例如贵气体或氮气)中约1小时至800℃的老化处理约1小时至5小时。此外,可以完成。\n\n【0115】\n\n根据本实施例,可以制造具有高残留磁通密度的烧结磁体。\n\n【例子】\n\n【0116】\n\n在以下实验中,比较了通过将模具X,模具P和模塑条件1和2使用以下组成的稀土合金粉末A的模塑条件1和2获得的每个烧结体的对准角。。\n\n【0117】\n\n在该实验中,模具X是满足本实施例中限定的要求的本发明的示例,并且模具P是设置有轭构件的非磁性模具(比较例),并且模具X具有空腔与腔体相同。形成条件2是图2中所示的摆动磁场。如上所述的图4(a)\n\n它对应于法律。在下文中,进行所有右倾斜的压制。另外,用于将用于在垂直冲头的模孔中按压粉末的单轴压制成形装置用于压制成型。\n\n【0118】\n\n通过(测量民意调查的密度/真实密度)计算调查粉的相对密度。测量约为7.5克/厘米3它是。基于填充在压制成形装置的空腔中的合金粉末的重量和空腔的含量来计算测量密度。\n\n【0119】\n\n(稀土合金粉末A)\n\nND:23重量%,Pr:7重量%,Dy:1.2重量%,B:1重量%,CO:1质量%,剩余物由氢研磨大致粉碎,然后粗粉碎使用Fe和不可避免的杂质微刨粉A.稀土合金粉末的矫顽力A(H.Cj)约为80 ka / m。\n\n【0120】\n\n(模具)\n\n模具X(实施例实施例):模具X具有作为图1所示的模具10的基本相同的配置。如上所述的图1所示。具体地,模具X是90mm×80mm的矩形,并且仅仅是仅由碳工具钢的铁磁材料形成的第一模具构件1,并且仅由高硬度非磁性钢的非磁性材料。它是组成的形成的第二模具构件2。第一模具构件1和第二模具构件2设置为经由腔3(50mm×40mm的矩形)彼此堆叠。第一模具构件1和第二模具构件2之间的接合部分固定在多个螺栓(未示出)中。\n\n【0121】\n\n模具P(比较例):模具P的构造如图2所示。模具P的详细构造(矩形为90mm×80mm)如下。\n\n【0122】\n\n腔x轴方向尺寸lc:40毫米\n\n腔Y轴方向尺寸:50毫米\n\nX轴方向尺寸L磁轭构件123至124x:40毫米\n\n轭构件123至124 y轴方向尺寸:7毫米\n\n【0123】\n\n(成型方法)\n\n成型条件1\n\n将正磁场用稀有磁场施加到稀土合金粉末A,其强度(约1200kA / m)比稀土合金粉末的矫顽力,密度为约4.2g / cm。3(参考约0.56的相对密度)给出了模制体(参见图5)。模塑压力为约30MPa,正磁场的施加时间是总共15秒。图。图5示出了磁场的施加时间与磁场强度与磁场强度的相对密度和磁场强度的相对密度以及稀土合金粉末,包括去腔处理以及压制过程。这与图1中的相同。稍后描述的图4。\n\n【0124】\n\n成型条件2(摆动磁场法)\n\n如图1所示的压力机。将图4A所示,稀土合金粉末A施加。在此施加的正磁场和逆磁场的强度(绝对值)约为1200ka / m,大于稀土合金粉末的矫顽力。\n\n【0125】\n\n首先,用正磁场压制稀土合金粉末。正磁场的施加时间为5秒。\n\n【0126】\n\n粉末密度约为3.0g / cm3之后(相对密度为约0.40),逆磁场,正磁场和逆磁场进行间歇地顺序地进行。这里,在施加反向磁场后,停止约1秒,然后施加正磁场,然后进行止动约1秒的循环。孩子\n\n在磁场的施加周期内的轮询粉末的密度约为3.0g / cm3它是恒定的,每个应用时间恒定约2秒。\n\n【0127】\n\n最后,通过相对于花粉和密度为正磁场按压正磁场,密度为约4.2g / cm3(相对密度为模制体的约0.56)。模塑压力为约30MPa,正磁场的施加时间为5秒。正磁场的应用次数和一系列步骤中的逆磁场是总共5次。\n\n【0128】\n\n(续航治疗)\n\n将磁场类似于稀土合金粉末A的矫顽力施加到模塑体上以进行去磁处理。\n\n【0129】\n\n(烧结方法)\n\n在AR气氛中在约1050℃下烧结处理5.5小时后,在AR气氛中在约500℃下进行老化处理3小时。所得烧结体的尺寸为36mm×35mm×20mm。\n\n【0130】\n\n(评估)\n\n以这种方式获得的每个烧结体的对准方向的表面(磁极表面)的一侧抓住约0.15mm或0.65mm,并且X射线被照射到模具中的对准角度通过计算计算方向和压力方向。特别地,在使用微小部分X射线衍射仪的X射线照射表面的尺寸的尺寸限制为3mm的状态下,图3所示的X射线极图的测量位置。7(A1到A3,B1至B3,C1被C3的总共九点照射),并测量(006)极性点图,以及强度中心方向,即对准方向在模具方向上移动了多少次询问了相对于磁极表面的正常方向的压力方向。\n\n【0131】\n\n(考虑)\n\n在下文中,通过模X(本发明)获得的样品和通过模塑条件1获得的样品和模制条件2分别称为实施例1和本发明实施例1。此外,使用模塑条件1获得的样品使用模具P(比较例)称为对比例1。\n\n【0132】\n\n首先,参见图1。\n\n【0133】\n\n图8读取使用磁化容易轴方向中的峰值的峰值产生的极性图的对准方向的对准方向,即烧结磁体的对准方向,其在当时的磁场对准方向偏移多次模塑。图是一种显示结果的图。图2中的对准角的代码“+”。图8中的图8表示与图8所示的模具方向(+)偏差。图。图8A示出了抛光表面的结果,其中一个磁极表面为0.15mm。图8(b)示出了抛光表面的结果,其中示出了其中一个磁极平面为0.65mm的抛光表面,分别。在图中如图8A和8B所示,图8A和8B中所示的测量位置A1至A3的每个对准角包括:在“测量位置A”中一起示出。这同样适用于“测量位置B”和“测量位置C”。\n\n【0134】\n\n首先,我们将考虑比较例1中的对准角。如图1和图2所示。如图8A和8B所示,如图8A和8B所示。如图8A和8B所示,模具方向上的对准角度从样品的中心部分(测量位置C1至C3)到样品表面(测量位置A1至A3)较大)。它变得最大的约5°(见图8A),其从磁极表面的0.15mm磨损磨料表面的样品表面附近。\n\n【0135】\n\n另一方面,在使用本发明的模具X的示例性实施例1和2中,无论对准角的测量位置和抛光表面如何,对准角几乎是恒定的,并且它小约1°。\n\n【0136】\n\n接下来,参见图4。\n\n【0137】\n\n图。图9是表示读取烧结磁体的对准方向是否已经在模制时从磁场对准方向沿压力场对准方向移位多次的读取的结果的图。图4中的对准角的代码“+”。图9表示在图9所示的压力方向(+)中的偏差。图。图9A示出了磨料表面的结果,其中一个磁极表面为0.15mm,图9(b)示出了抛光表面的结果,其中示出了其中一个磁极平面为0.65mm,分别。\n\n【0138】\n\n从图中。如图9A和9B所示,在本发明的实施例1和2中使用模具x根据本发明的实施例,比较例的模具,同时样品表面附近的对准角度相对较小。在比较例1中使用P,可以看出,对准角度在很大程度上偏离磁场施加方向。在本发明的实施例中,根据本发明的实施例2,将取向角抑制至最大约5°或更小。\n\n【0139】\n\n从上述实验结果,已经发现,当使用满足本实施例的要求的模具进行摆动磁场方法时,可以执行摆动磁场方法,对准角度在模具中的偏差方向和压力机方向可以减少。\n\n【0140】\n\n在该实验中,尽管使用矫顽力的相对低的磁粉的实验结果,即使在获得具有大矫顽力的磁粉(例如,约150ka / m或更多)时,也可以获得相同的结果。可以想象。\n\n【0141】\n\n另外,当使用图1所示的控制摆动磁场制造粉末成型体时,如上所述的图4B所示,通过实验确认,即可以进一步抑制取向角的位移。\n\n【工业可用性】\n\n【0142】\n\n通过本发明的制造方法获得的粉末成型体适合用于在磁性特性中产生优异的永磁体,因为对准角的布置小。由此获得的永磁体可用于例如电动机,传感器等。\n\n[简要描述;简介]\n\n【0143】\n\n【图1】图3是在本发明的实施方式中使用的模具10的透视图。\n\n【图2】图2是示出当在达到约0.4或更大的相对密度达到约0.4或更大的状态下施加对准磁场时磁粉和模具之间的关系的图。是(a)是一个例子本发明和(b)和(c)是比较例。\n\n图3.图3是从模具的上表面观察到磁通量的示意图,并且(a)表示比较例,(b)是比较例,(c)是常规例子。\n\n图4.图1是表示在该实施方式中的压制过程的优选方面的过程图,(a)是从磁粉的矫顽力,之后被压下并达到预定的相对密度。在包括步骤的过程绘图中施加大的第一逆磁场至少一次,在压制磁粉末并达到预定的相对密度之后,磁粉末以相反的方向保持反向。图6是包括应用a的步骤的过程图第一逆磁场至少小于磁力至少一次。\n\n图5.图3是表示磁场的施加时间,磁场的强度和稀土合金粉末的相对密度之间的关系的图。\n\n6.图3是表示本发明的示例中所示的模具P(比较例)的结构的立体图。\n\n图7.在本发明的实施例中,示出了X射线极值图的测量位置的图。\n\n图8.图3是表示读取烧结体的对准方向是否在模制时从模塑的磁场对准方向移位多次烧结的结果的图,(a)是0.15mm的抛光表面磁极表面。(b)的结果显示抛光表面的结果,杆表面的0.65mm抛光抛光表面。\n\n图9图3是表示读取烧结体的对准方向是否在模制时磁场对准方向的方向上移位多次的读取结果的图,(a)为0.15mm的抛光表面磁极表面。结果显示,(B)显示抛光表面的杆表面0.65mm的结果。\n\n[标志的说明]\n\n【0144】\n\n第1第一模具构件\n\n2第二模具构件\n\n3芯洞\n\n4模孔内表面\n\n5腔\n\n6磁粉(粉末粉)\n\n7拳\n\n7A上压表面\n\n8个较低的拳头\n\n8A低压表面\n\n9定向磁场\n\n10模具\n\n11,12铁磁部件\n\n13磁通量\n\n14,15杆表面\n\n16,17轭部件\n\n18个铁磁部件\n\n19个非磁性成员\n\n20模具\n\n120模具\n\n123-124 York会员');
INSERT INTO `os_patent_instruction_text` VALUES (13057, 22886, 'TECHNICAL FIELD\n\n[0001]The present invention relates to a method for manufacturing a high-performance rare-earth magnet and a system for the method.\n\nBACKGROUND ART\n\n[0002]A sintered rare-earth/iron/boron magnet, which is called “RFeB magnet” hereinafter, was introduced in 1982 and is steadily spreading their fields of commercial application as ideal materials for permanent magnets. They can be produced at low costs from neodymium, iron, boron and other materials abundantly present in nature. Moreover, their characteristics are much better than those of their predecessors. The major application areas of the RFeB magnets are: voice coil motors (VCMs) for actuating magnetic heads of hard disk drives (HDDs) used in computers; high-quality speakers; headphones; battery-assisted bicycles; golf carts; and magnetic resonance imaging (MRI) apparatuses using permanent magnets. They are also coming into practical use in drive motors for hybrid cars.\n\n[0003]The RFeB magnet was discovered by the present inventors (see Patent Document 1) in 1982. Its main phase consists of a magnetically anisotropic, intermetallic compound of R2Fe14B having a tetragonal crystal structure. To obtain high magnetic characteristics, it is necessary to utilize a magnetic anisotropy. In addition to sintering, several methods have been proposed. For example, Japanese Patent No. 2561704 discloses a method including the steps of casting, hot working and aging treatment. Another method disclosed in U.S. Pat. No. 4,792,367 has the step of die upsetting of a quenched alloy. However, these methods are inferior to the sintering method with respect to both the magnetic characteristics and productivity. Sintering is the best method for obtaining a dense and uniform microstructure that is indispensable for permanent magnets.\n\n[0004][Manufacturing Process]\n\n[0005]The process of manufacturing a sintered RFeB magnet includes the following steps: composition determination, dissolution, casting, pulverization, compression molding in a magnetic field, sintering, and heat treatment.\n\n[0006][Composition]\n\n[0007]Since the discovery of the RFeB magnet, many techniques for improving the coercive force and other characteristics of the magnet have been invented, focusing on the effects of additional elements (e.g. Japanese Patent No. 1606420), heat treatments (e.g. Japanese Patent No. 1818977), and control of the crystal grain size (e.g. Japanese Patent No. 1662257). The most effective technique for enhancing the coercive force is the addition of heavy rare-earth elements (Dy and Tb) (Japanese Patent No. 1802487). Use of a large amount of heavy rare-earth elements assuredly improves the coercive force. However, it also lowers the saturation magnetization and accordingly decreases the maximum energy product. Furthermore, both Dy and Tb are rarely found in nature and also expensive, so that these elements cannot be used to produce motors for hybrid cars, which will gain more commercial demand in the future, or other industrial or domestic motors.\n\n[0008][Resolution]\n\n[0009]Sintered magnets need to have a dense, uniform microstructure. In earlier years, they were typically manufactured by casting a molten alloy and pulverizing the cast alloy (e.g. Japanese Patent No. 1431617). Quenching the molten alloy by a strip-casting method suppresses the formation of alpha iron. This reduces the amount of nonmagnetic rare-earth elements and thereby increases the energy product (e.g. Japanese Patent No. 2665590 and Unexamined Japanese Patent Publication No. 2002-208509).\n\n[0010][Pulverization]\n\n[0011]An RFeB alloy becomes easier to pulverize when it occludes hydrogen, because the hydrogen creates microcracks within the alloy (Japanese Patent No. 1675022). The most popular pulverization method is a jet-mill pulverization that uses an inert gas, such as nitrogen (e.g. Japanese Patent No. 1883860). This technique produces a powder whose grain-size distribution has a sharp peak.\n\n[0012][Molding]\n\n[0013]The technique of creating a sintered magnet having a magnetic anisotropy by compression molding of a powder in a magnetic field was initially adopted in the invention of a ferrite magnet (Examined Japanese Patent Publication No. S29-885 or U.S. Pat. No. 2,762,778) and later applied to the production of RCo or RFeB magnets (U.S. Pat. No. 3,684,593 or Japanese Patent No. 1431617). The fine particles of the powder are compacted into a body in which their c-axes of the RFeB tetragonal crystal structure are oriented to the same direction. A typical technique is the die-pressing method. Other methods include the CIP method (Japanese Patent No. 3383448) and the RIP method (Japanese Patent No. 2030923), both of which provide higher degrees of orientation and larger energy products.\n\n[0014][Die-Pressing Method]\n\n[0015]In 1951, when Went et al. invented a ferrite magnet (Examined Japanese Patent No. S35-8281 and U.S. Pat. No. 2,762,777), Gorter et al. also invented a sintered ferrite magnet having a magnetic anisotropy (Examined Japanese Patent No. S29-885 and U.S. Pat. No. 2,762,778). This was the first case where the compression molding in a magnetic field was combined with a sintering process to manufacture a permanent magnet having a magnetic anisotropy. Since then, various improvements have been made to overcome the problems discerned in the mould-pressing method.\n\n[0016][Addition of a Lubricant]\n\n[0017]In some methods, a lubricant is added to increase the degree of orientation of the fine particles during the die-pressing process and to reduce the friction among and between the particles and the die (e.g. Japanese Patent Nos. 2545603 and 3459477).\n\n[0018][Wet Pressing in a Magnetic Field]\n\n[0019]To achieve a high degree of orientation while preventing the fine particles from oxidization, some methods include the steps of mixing the fine particles with a mineral oil, a synthetic oil or a vegetable oil, injecting the mixture into the die with a high pressure, and performing a wet compression molding in a magnetic field (e.g. Japanese Patent No. 2731337). Some reports on this technique claim that the magnetic characteristics can be improved by pressure injection and pressure compression of slurry (Japanese Patent No. 2859517).\n\n[0020][CIP]\n\n[0021]The die-pressing method can apply the pressure only in one direction, which leads to misorientation. An isotropic application of pressure from every direction will reduce the disorder of the orientation. In one method for the isotropic application of the pressure, a rubber container filled with the fine particles is set in an external magnetic field and subjected to a cold isostatic pressing (CIP) process (Japanese Patent No. 3383448).\n\n[0022][RIP]\n\n[0023]To obtain the same effect as the CIP method, the present inventors proposed the rubber isostatic pressing (RIP) method, in which a rubber mold is set in a die-pressing machine and subjected to an isostatic pressure (Japanese Patent No. 2030923). This method is easier to automate and hence far more suitable for mass production than the CIP method.\n\n[0024][AT]\n\n[0025]An air-tapping [AT] method, which was proposed in Unexamined Japanese Patent Publication Nos. H09-78103, H09-169301 and H11-49101, is a method for loading a cohesive fine powder into the die cavity of a die-pressing machine or similar machines. In this technique, a rapid flow of air is intermittently supplied onto a powder to uniformly load it into the die cavity with high density. In a method proposed in Unexamined Japanese Patent No. 2000-96104, the air-tapping technique is used to solidify the powder into an object having a near net shape.\n\n[0026][Pulsed Magnetic Field]\n\n[0027]A magnetic field is externally applied to the particles in order to orient them in the same direction. In the case of RFeB magnets, the c-axis of the tetragonal crystal structure corresponds to the easy magnetization axis. When the magnetic field is applied, the particles are oriented in the axial direction. Normal types of die-pressing machines use an electromagnet to create a static magnetic field, whose maximum field strength is about 15 kOe. In contrast, in the case of creating a pulsed magnetic field with an air core coil, the field strength can be as high as 15 to 55 kOe. Use of such a strong magnetic field actually improves the magnetic characteristics (Japanese Patent No. 3307418).\n\n[0028][Closed System]\n\n[0029]In a method proposed in Unexamined Japanese Patent Publication No. H06-108104, the pulverization and molding processes are performed under inert atmosphere in order to avoid the powder oxidization.\n\n[0030][Patent Document 1] Japanese Patent No. 1431617\n\nDISCLOSURE OF THE INVENTION\n\nProblem to be Solved by the Invention\n\n[0031][Effect of the Sintering Method]\n\n[0032]A powder metallurgy (or sintering) method can create a dense and uniform microstructure. As far as rare-earth cobalt magnets and RFeB magnets are concerned, the powder metallurgy is the best technique to utilize the characteristics of each material and obtain a high-performance permanent magnet.\n\n[0033][Press-Molding in a Magnetic Field]\n\n[0034]The first case where the compression molding in a magnetic field was combined with the sintering process to produce a sintered magnet having a magnetic anisotropy was the invention of a sintered ferrite magnet having a magnetic anisotropy by Gorter et al. (Examined Japanese Patent No. S29-885 and U.S. Pat. No. 2,762,778). It was immediately after the invention of a ferrite magnet by Went et al. in 1951 (Examined Japanese Patent No. S35-8281 and U.S. Pat. No. 2,762,777). The alleged purposes of the compression molding are to squeeze liquid components by a compression process and to fix the oriented state of the particles. It is also claimed that the compression molding is a good technique to obtain a desired shape. An experiment has proved that, if a powder is put in a container and heated in a magnetic field without being compressed, the resultant product has a lower density and poorer magnetic characteristics than the product obtained by the compression molding.\n\n[0035]Later, the technique of the compression molding combined with the sintering process was further applied to the production of sintered RCo magnets (U.S. Pat. No. 3,684,593) and sintered RFeB magnets (Japanese Patent No. 1431617). Applying a magnetic field is an essential process to orient the particles. However, the effect of compression has not been particularly examined.\n\n[0036][Reason for Choosing a Die-Pressing Method]\n\n[0037]The die-pressing method is used because it can create a “net shape” that is close to the final product in shape and size, and is an automated process with a high yield percentage. Particularly, the net shape and the yield percentage are the key features that have made the die-pressing method widely used as a suitable technique for mass production.\n\n[0038][RIP]\n\n[0039]To obtain the same effect as comparable to the CIP method, the present inventors proposed the rubber isostatic pressing (RIP) method (Japanese Patent No. 2030923). In this method, a fine powder is put into a rubber mold, and the entire mold is pressed by a die-pressing machine while a pulsed magnetic field is applied. The combination of the CIP-like isotropic pressure with the pulsed magnetic field enables the RIP method to give the magnet higher characteristics than cannot be achieved by die-pressing. An RIP process includes the steps of filling the rubber mold, applying the pulsed magnetic field, performing the compression molding and demagnetization. These sequential steps can be automated for mass production.\n\n[0040][Detailed Steps of Pressing in a Magnetic Field]\n\n[0041]During the long history of the die-pressing technique, many attempts have been made to automate the process and thereby improve the working efficiency. The process typically includes the following steps:[0042]A fine powder is supplied through the feeder into a die.[0043]The upper punch is lowered to close the cavity.[0044]A magnetic field is applied.[0045]While the magnetic field is applied, the powder is pressed with the upper and lower punches.[0046]A demagnetizing or alternating field is applied to demagnetize the powder compact.[0047]The upper punch is lifted.[0048]The lower punch is lifted (or the die is lowered) to push the powder compact out of the top of the die.[0049]A robot arm transfers the powder compact onto the conveyer.[0050]The powder compacts are gathered to a specific area.[0051]The powder compacts are arranged on a sintering bedplate.\n\n[0052]The powder compacts are arranged at certain intervals so that they do not collide with or adhere to each other. Under some working conditions, the powder compacts may be stored for a few days. Die-pressing machines used in the powder metallurgy are precision machines; though the positioning of the punches and the dies is relatively easy if a single-cavity die is used, the positioning operation will be complex if the die has multiple cavities. There are various forms and sizes of magnets demanded: disc, rectangle, ring, arc and so on. It is necessary to carry out a troublesome work for exchanging dies every time the form or size is changed.\n\n[0053][Purpose and Effect of the Compression Molding in a Magnetic Field]\n\n[0054]With respect to the function of the compression molding, there is an explanation in a book entitled Rare-earth Iron Permanent Magnet, edited by J. M. D. Coey, CLARENDON PRESS, OXFORD, 1996, pp. 340-341: “The pressing load is sufficient to make compacts having enough strength to be handled but without significant misorientation of the crystallites.” J. Ormerod wrote in his paper entitled “Powder Metallurgy of rare earth permanent magnets”, Powder Metallurgy 1989, Vol. 32, No. 4, p. 247: “The pressing pressure should be sufficient to give the powder compact enough mechanical strength to withstand handling, but not high enough to cause particle misorientation.” Both accounts stress that it is necessary to strongly compress the powder compact to make it strong enough for handling, while recognizing the possibility of misorientation that will occur if the pressure is too strong.\n\n[0055][Problems Inherent in Rare-Earth Magnets]\n\n[0056]A rare-earth magnet contains about 30 weight percent of rare-earth element/rare-earth elements, which is/are chemically active and easy to oxidize. A process of manufacturing a sintered rare-earth magnet includes a step that handles fine particles having a grain size of about 3 μm and containing a large amount of chemically active rare-earth element. Every particle of the fine powder needs to be oriented in the same direction in the magnetic field. Therefore, it is impossible to preliminarily granulate the powder for improving its fluidity, as in normal cases of powder metallurgy. Since the fine powder is used in volume and each particle behaves as a magnet, the powder forms a bridge when it is supplied into the die cavity. Thus, it is difficult to uniformly load the powder.\n\n[0057][For Better Orientation]\n\n[0058]In the methods proposed in Japanese Patent No. 3459477, Unexamined Japanese Patent Publication No. H08-167515 and so on, a lubricant is added to increase the degree of orientation of the fine powder during the die-pressing process. The lubricant reduces the friction among the fine particles and thereby improves their degree of orientation while they are being compressed in the magnetic field. However, adding too much lubricant to obtain an adequate lubricating effect results in a longer period of time required for degreasing. A certain kind of liquid lubricant (e.g. one disclosed in Unexamined Japanese Patent Publication No. 2000-306753) is known for its good volatility and said to scarcely remain in the sintered body. However, adding too much lubricant to increase the degree of orientation decreases the strength of the powder compact after the die-pressing process, causing a problem in handling. Die-pressing machines use an electromagnet to apply a static magnetic field. The maximum strength of the static magnetic field created by the electromagnet is limited to about 10 to 15 kOe (1 to 1.5 T) because the magnetic flux saturates due to the iron core. With this magnetic field unchanged, if the pressure is increased, the frictional force among the particles will be stronger than the magnetic force, causing each particle to rotate. Thus, a misorientation takes place. To prevent this phenomenon, a method of orientation that uses a pulsed magnetic field has been proposed (Japanese Patent No. 3307418). It has been confirmed that the pulsed magnetic field can achieve the strength of 1.5 to 5.5 T and thereby enhance Br, the residual magnetic flux density. However, if a pulsed magnetic field is created within a die-pressing machine as in the above invention, an eddy-current loss or a hysteresis loss takes place every time the magnetic field is applied, causing the die to generate heat. Furthermore, the pulsed magnetic field impacts the metallic die in a moment and shortens the life of the pressing machine, which is precisely constructed. Thus, the above method is impractical.\n\n[0059][To Make the Powder Compact Stronger]\n\n[0060]To improve the workability of the die-pressing process, some conventional methods add an organic binder or a lubricant, while others adopt a wet molding technique. However, these methods all presuppose the use of a strong compression force. Therefore, the aforementioned additives are firmly confined within the powder compact, so that they cannot be removed by a degreasing process performed before the sintering process. Heating the powder compact at a low temperature for a long period of time could completely remove the additives. However, this approach would significantly lower the productivity. If the powder compact with the organic component remaining inside is heated at too high a temperature, the regular elements will react with carbon and other impurities, causing the magnetic characteristics to deteriorate and the corrosion resistance to be lower.\n\n[0061][Wet Molding]\n\n[0062]To achieve a high degree of orientation while preventing the oxidization of the fine powder, one conventional method mixes the fine particles with a mineral oil or a synthetic oil and then shapes the mixture by a wet compression molding in a magnetic field (e.g. Japanese Patent No. 2859517). In this method, a fine powder obtained by a pulverization process using a jet mill is collected in and mixed with a mineral or synthetic oil, and the mixture is injected into and compressed within the die cavity by pressure. Wet molding is a variation of the manufacturing technique of Sr ferrite magnets. The difference exists in that water is used for ferrite magnets while rare-earth magnets do not allow the use of water, instead of which an oil or other solvent is used. Oils contain a large amount of impurities, such as carbon, which are difficult to remove through the sintering process. Although researchers are attempting to invent new kinds of oil that easily vaporize and leave virtually no remnants, it is difficult to remove carbon once it is confined in a tightly compressed powder compact. Such a degreasing process needs to be performed at a temperature where the oil vaporizes and does not react with the rare earth. For that purpose, it is necessary to maintain the powder compact at a relatively low temperature for a long period of time, which significantly deteriorates the mass production efficiency. If the degreasing is not fully performed, the remaining elements easily react with the rare-earth elements at high temperatures, which deteriorates the magnetic characteristics and reduces the corrosion resistance.\n\n[0063][Oxygen-Free Process]\n\n[0064]In the die-pressing method, the fine powder is exposed to air. In a method proposed in Unexamined Japanese Patent Publication No. H06-108104, the steps from the pressing in a magnetic field to the conveying into the sintering furnace are carried out under inert atmosphere. However, in practice, it is necessary to remove the fine particles scattered around the die and frequently exchange the dies; opening the chamber with the particles scattered inside is dangerous. Since the magnetic fine powder is used in volume and liable to form a bridge, it is difficult to constantly feed the powder. Therefore, it is necessary to regularly weigh the powder compact and give a feed back about the result. As opposed to normal crystals, rare-earth magnets do not allow a large amount of binder and a high pressure to be used to create a robust powder compact. Therefore, the resultant powder compact is fragile. Using a glove box or similar tools that allow operators to insert their hands into the pressing machine and do some tasks is dangerous and inefficient. In summary, it can be said that the idea of setting the entire manufacturing system, including the die-pressing machine, under inert atmosphere is very difficult to realize on a mass production basis.\n\n[0065][Why Fine Powders have not been Used]\n\n[0066]Confining fine particles having a grain size of 3 μm is impracticable even if the dies and punches have the narrowest possible clearance. Therefore, every time the fine powder is compressed, a portion of the fine particles will be ejected and fly around the die. Such particles have a potential for ignition or explosion. These particles can be collected with an automatic dust collector. In that case, however, the apparatus needs to be regularly cleaned. For magnet makers having the most advanced techniques in the world, the crystal grain size of the sintered RFeB magnets used in mass production is from 4.5 to 6 μm in terms of D50, i.e. the median of the grain size measured with a laser-type grain-size distribution measurement apparatus. It is known that the D50 value is approximate to the actual grain size measured with a microscope. The size of a single-domain particle of the intermetallic compound R2Fe14B is much smaller (0.2 to 0.5 μm). Therefore, in the case of sintered magnets, it is expected that a smaller crystal grain size will result in a stronger coercive force. In fact, however, the coercive force rapidly falls with the decrease of the grain size, as shown in FIG. 3 of Unexamined Japanese Patent Publication No. S59-163802. This fact suggests that oxidization is unavoidable in the conventional processes that handle a fine powder. An RFeB alloy powder, which contains a chemically active rare-earth element, is very easy to oxidize and may ignite if it is left under atmosphere. The danger of ignition is larger as the grain size is smaller. Even if it does not ignite, the powder is easily oxidized to a nonmagnetic oxide, which will remain in the sintered magnet and deteriorate its magnetic characteristics. However, in the conventional methods, it is unavoidable that the fine powder is exposed to air during the molding process and when the powder compact is conveyed into the sintering furnace. As stated earlier, the grain size of the fine particles produced by the world-class makers is about 4.5 to 6 μm in D50; any powder finer than this level will easily oxidize even after it is compressed into a compact. In some previous attempts, an oil or a liquid lubricant is added to the fine powder to obtain a synergistic effect for preventing the oxidization. However, adding a large amount of lubricant or similar material not only weakens the powder compact but also leaves carbon or other impurities, which deteriorate the magnetic characteristics. In summary, it is practically impossible to use a powder whose D50 is 4 μm or smaller in the conventional die-pressing method.\n\n[0067]As explained earlier, the most serious problem relating to the method and system for manufacturing a sintered RFeB magnet is that it is difficult to construct the manufacturing line as a perfectly closed system. It is known that the characteristics of a sintered RFeB magnet become higher as the grain size is smaller or as the powder or the powder compact is less oxidized during the manufacturing process. However, the powder becomes more active as its surface is less oxidized or its grain size is smaller. To handle such an active powder, it is necessary to always fill the manufacturing line with an inert gas, such as N2. Even the smallest amount of air intrusion will cause the powder to generate heat. Since the amount of the powder handled in a mass production line is very large, the small amount of heat can increase and eventually cause a fire. Currently, most of the sintered RFeB magnets having a magnetic anisotropy are produced through a manufacturing line that employs either the die-pressing method or the RIP method. A portion of this manufacturing line is designed to be operated with its inner space filled with an inert gas. Sintered RFeB magnets having a magnetic anisotropy produced by such a manufacturing line have high characteristics because they are less oxidized. However, such a low-oxygen production line is not perfectly free from the danger of fire, explosion or similar serious accidents. Therefore, it is difficult to make the powder more active than the current level, even if it is known that use of such a powder will further improve the characteristics. The reasons why it is difficult to construct the current manufacturing lines as a perfectly closed system are as follows:\n\n[0068]A manufacturing line employing the die-pressing method:\n\n[0069](1) The space to be enclosed is very large.\n\n[0070](2) It is difficult to exchange a large die while preventing air from intruding into the system.\n\n[0071](3) To improve the productivity, it is necessary to sequentially perform the following steps at short cycles of time: loading and compressing the powder, taking out the powder compact, cleaning the powder compact (i.e. removing unnecessary powder from the surface), arranging the powder compact on a bedplate, boxing up the bedplate with powder compacts on it, and setting the box with the powder compacts into the sintering furnace. In practice, various problems often take place during these steps. Solving such problems always requires some manual operation, and it often happens that these cannot be solved without introducing air into the system.\n\n[0072]A manufacturing line employing the RIP method:\n\n[0073]To improve the productivity, it is necessary to sequentially perform the following steps at short cycles of time: loading a powder into the rubber mold with high density, orienting the powder by a magnetic field, compressing the powder, taking out the powder compact, cleaning the powder compact, arranging the powder compact on a bedplate, boxing up the bedplate with powder compacts on it, and setting the box with the powder compacts into the sintering furnace. This process often encounters many problems, some of which cannot be solved without introducing air into the system, as in the case of the manufacturing line employing the die-pressing method.\n\n[0074]In the above two types of manufacturing lines, the primary reason why the system cannot be a perfectly closed system is that it is necessary to take out the powder compact from the die or rubber mold after the powder-compressing step. In the course of taking out the powder compact from the die or rubber mold, the powder compact may be cracked or chipped, or unnecessary powder may stick to it. Similarly, the cracking or chipping of the powder compact can occur during the subsequent handling operations. Since robots cannot deal with such accidents, it is necessary to introduce air into the system so that the operator can manually solve the problem. Thus, the aforementioned manufacturing lines can work as a closed system for producing RFeB-based anisotropic sintered magnets only on a temporary basis; it is very difficult to continue the operation for a long period of time. Use of a powder that is more active than those currently used will not be accepted by those who are working on site; it is actually very dangerous.\n\n[0075]As described thus far, the conventional methods for manufacturing a sintered RFeB magnet having a magnetic anisotropy, using either the die-pressing method or the RIP method, are inappropriate for handling an active powder. This means that, on a mass production basis, those methods have only a limited range for reducing the grain size or lowering the amount of oxygen contained in the powder in order to improve the magnetic characteristics, and particularly the coercive force, of the magnets. Even in the production of the highest-quality RFeB magnets by world-class makers, the grain size of powder used in the conventional methods is about 5 μm in D50, i.e. the median of the grain-size distribution measured by a laser-type grain-size distribution measurement method.\n\n[0076]Another problem of the method for manufacturing a sintered RFeB magnet having a magnetic anisotropy is that its productivity declines if the magnet is a plate type or an arched plate type. These types occupy a large percentage of all the sintered RFeB magnets having a magnetic anisotropy. In these types of magnets, the magnetizing direction is perpendicular to the main surface of the magnet.\n\n[0077]One conventional method for manufacturing a plate magnet is to slice a large block of sintered magnet with a cutter having a peripheral cutting edge. One shortcoming of this method is that a portion of the expensive sintered magnet is chipped off and wasted. The percentage of the wasted portion increases as the product becomes thinner. Another problem is that the process requires a long machining (cutting) time and causes heavy abrasion of the tools used.\n\n[0078]Another method for manufacturing a plate magnet is to create powder compacts by a die-pressing method in a magnetic field on a piece-by-piece basis and then separately sinter each piece of the plate magnet. One shortcoming of this method is that the plate magnet needs to be formed by applying a pressure parallel to the magnetic field. Applying the pressure in this manner causes the misorientation of the powder during the compression process, which causes the maximum energy product of the resultant, sintered magnet to be nearly 10 MGOe lower than that of the magnet created by applying a pressure perpendicular to the magnetic field. Furthermore, the piece-by-piece pressing and sintering of the plate magnet is unproductive. It is possible to adopt a multi-cavity pressing method, which uses multiple die cavities to create or sinter multiple powder compacts. However, the number of powder compacts that can be simultaneously created is about two to four at most due to the restriction on the pressure to be applied. Thus, this method does not significantly improve the productivity.\n\n[0079]When an arched plate magnet is produced by a conventional method, the pressure is applied in the direction parallel to the magnetic field. This method also has the same problems as described previously in connection with the manufacturing of plate magnets. That is, the maximum energy product of the magnet is low due to the low degree of orientation of the magnet after the sintering. Also, the process from the molding to the sintering is unproductive, irrespective of whether each magnet is separately created or a multi-cavity molding method using multiple die cavities is adopted.\n\n[0080]In the case of manufacturing arched plate magnets by a conventional method, applying a pressure perpendicular to the magnetic field leads to an increase in the maximum energy product of the sintered magnet. However, the problem of the low productivity still remains. Another problem is that this method limits the height of the powder compact shaped like an arched plate.\n\n[0081]Still another problem of the conventional manufacturing methods is that they cannot produce a long-size sintered body having a circular or irregular cross-section. In the die-pressing method, applying a pressure parallel to the magnetic field restricts the allowable range of the length (or height) of the powder compact and lowers the maximum energy product of the magnet obtained. In contrast, applying a pressure perpendicular to the magnetic field to create a long object restricts the cross-section of the powder compact that can be formed, so that it is impossible to obtain a near net shape.\n\n[0082]Still another shortcoming of the conventional production methods is that it is difficult to create a ring-shaped flat magnet having high characteristics. Ring-shaped flat magnets must be magnetized in the direction perpendicular to the disc surface. Ring-shaped flat magnets are created by applying a pressure parallel to the magnetic', '技术领域 \n\n [0001] 高性能稀土磁体的制造方法及系统技术领域本发明涉及一种高性能稀土磁体的制造方法及该系统的系统。 \n\n 背景技术 \n\n [0002] 1982年推出了一种稀土/铁/硼烧结磁体,以下称为“ RFeB磁体”,并在其商业应用领域稳步扩展,成为永磁体的理想材料。 它们可以低成本地由天然存在的钕,铁,硼和其他材料制成。 而且,它们的特性比其前任要好得多。  RFeB磁铁的主要应用领域是:用于驱动计算机中使用的硬盘驱动器(HDD)磁头的音圈电机(VCM); 高品质的扬声器; 耳机 电动自行车 高尔夫球车; 以及使用永磁体的磁共振成像(MRI)设备。 它们还被实际用于混合动力汽车的驱动电动机中。 \n\n [0003] RFeB磁体是由本发明人于1982年发现的(参见专利文件1)。其主相由R的磁各向异性金属间化合物组成。 2 铁 14 B具有四方晶体结构。 为了获得高的磁特性,必须利用磁各向异性。 除了烧结以外,还提出了几种方法。 例如,日本专利No.2561704公开了一种包括铸造,热加工和时效处理的步骤的方法。 在美国专利No.  US 4,792,367具有淬火合金的模锻setting锻步骤。 然而,就磁性和生产率而言,这些方法均不如烧结方法。 烧结是获得致密和均匀的微观结构的最佳方法,这对于永磁体是必不可少的。 \n\n [0004] [制造过程] \n\n [0005] RFeB烧结磁体的制造过程包括以下步骤:成分确定,溶解,浇铸,粉碎,在磁场中压缩成型,烧结和热处理。 \n\n [0006] [组成] \n\n [0007] 自从发现RFeB磁体以来,就发明了许多改进磁体​​的矫顽力和其他特性的技术,重点关注附加元素(例如日本专利号1606420),热处理(例如日本专利号1818977)的影响。  ),以及控制晶粒大小(例如,日本专利第1662257号)。 提高矫顽力的最有效的技术是添加重稀土元素(Dy和Tb)(日本专利第1802487号)。 大量使用重稀土元素可以确保提高矫顽力。 然而,它也降低了饱和磁化强度并因此降低了最大能量积。 此外,Dy和Tb在自然界中很少见,而且价格昂贵,因此这些元素不能用于生产用于混合动力汽车的电动机,这将在未来获得更多的商业需求,或者用于其他工业或家用电动机。 \n\n [0008] [解析度] \n\n [0009] 烧结磁体需要具有致密,均匀的微观结构。 早些年,它们通常通过铸造熔融合金并粉碎铸造合金来制造(例如,日本专利第1431617号)。 通过带铸法对熔融合金进行淬火可以抑制α铁的形成。 这减少了非磁性稀土元素的量,从而增加了能量乘积(例如,日本专利第2665590号和日本未经审查的专利第2002-208509号)。 \n\n [0010] [粉碎] \n\n [0011] RFeB合金吸留氢时,更容易粉碎,因为氢会在合金内产生微裂纹(日本专利1675022)。 最流行的粉碎方法是使用惰性气体如氮气的喷射式粉碎机(例如,日本专利号1883860)。 该技术产生的粉末的粒度分布具有尖峰。 \n\n [0012] [造型] \n\n [0013] 通过在磁场中对粉末进行压缩成型来制造具有磁各向异性的烧结磁体的技术最初是在铁氧体磁体的发明中使用的(已审查的日本专利公开No.S29-885或美国专利No.2,762,778)和 后来应用于RCo或RFeB磁体的生产(美国专利3,684,593或日本专利1431617)。 将粉末的细粒压制成一个主体,在该主体中,它们的RFeB四方晶体结构的c轴指向相同的方向。 典型的技术是压模法。 其他方法包括CIP方法(日本专利第3383448号)和RIP方法(日本专利第2030923号),两者均提供较高的取向度和较大的能量积。 \n\n [0014] [压模方法] \n\n [0015] 1951年,当温特(Went)等人时。  Gorter等人发明了一种铁氧体磁体(已审查的日本专利号S35-8281和美国专利号2762777)。 另外,还发明了具有磁各向异性的烧结铁氧体磁铁(已审日本专利No.S29-885和美国专利No.2,762,778)。 这是将磁场中的压缩成型与烧结工艺相结合以制造具有磁各向异性的永磁体的第一种情况。 从那时起,已经进行了各种改进以克服模压方法中发现的问题。 \n\n [0016] [添加润滑剂] \n\n [0017] 在某些方法中,添加润滑剂以增加模头压制过程中细颗粒的取向度并减小颗粒与模头之间以及颗粒与模头之间的摩擦(例如,日本专利第2545603和3459477号)。 \n\n [0018] [湿压磁场] \n\n [0019] 为了在防止细粒氧化的同时获得高取向度,一些方法包括以下步骤:将细粒与矿物油,合成油或植物油混合,在高压下将混合物注入模具中;以及 在磁场中进行湿式压缩成型(例如,日本专利第2731337号)。 关于该技术的一些报道声称,可以通过对浆料进行压力注入和压力压缩来改善磁特性(日本专利第2859517号)。 \n\n [0020] [CIP] \n\n [0021] 压模方法只能在一个方向上施加压力,这会导致方向错误。 从各个方向各向同性施加压力将减少方向的混乱。 在各向同性地施加压力的一种方法中,将填充有细颗粒的橡胶容器置于外部磁场中,并进行冷等静压(CIP)处理(日本专利3383448)。 \n\n [0022] [RIP] \n\n [0023] 为了获得与CIP方法相同的效果,本发明人提出了橡胶等静压(RIP)方法,其中将橡胶模具放置在模压机中并承受等静压(日本专利第2030923号)。 与CIP方法相比,此方法更易于自动化,因此更适合批量生产。 \n\n [0024] [在] \n\n [0025] 在未经审查的日本专利公开No.H09-78103,H09-169301和H11-49101中提出了一种气密[AT]方法,该方法是将内聚细粉装入模压机的模腔中的方法。 或类似机器。 在该技术中,将快速的空气流间歇地供应到粉末上,以将其均匀地高密度地加载到模腔中。 在未经审查的日本专利第2000-96104号中提出的方法中,使用敲击技术将粉末固化成具有接近最终形状的物体。 \n\n [0026] [脉冲磁场] \n\n [0027] 磁场从外部施加在粒子上,以使粒子朝向同一方向。 对于RFeB磁体,四方晶体结构的c轴对应于易磁化轴。 当施加磁场时,颗粒沿轴向取向。 普通类型的压模机使用电磁体产生静磁场,其最大磁场强度约为15 kOe。 相反,在利用空心线圈产生脉冲磁场的情况下,场强可以高达15至55kOe。 使用这样的强磁场实际上改善了磁特性(日本专利第3307418号)。 \n\n [0028] [封闭系统] \n\n [0029] 在未经审查的日本专利公开No.H06-108104中提出的方法中,为了避免粉末氧化,在惰性气氛下进行粉碎和成型过程。 \n\n [0030] [专利文献1]日本专利第1431617号 \n\n 发明内容 \n\n 本发明要解决的问题 \n\n [0031] [烧结方法的效果] \n\n [0032] 粉末冶金(或烧结)方法可产生致密且均匀的微观结构。 就稀土钴磁体和RFeB磁体而言,粉末冶金是利用每种材料的特性并获得高性能永磁体的最佳技术。 \n\n [0033] [在磁场中压模] \n\n [0034] 第一种将磁场中的压缩成型与烧结工艺相结合以生产具有磁各向异性的烧结磁体的第一种情况是Gorter等人发明的具有磁各向异性的烧结铁氧体磁体。  (已审查的日本专利号S29-885和美国专利号2762778)。 它是在Went等人发明铁氧体磁体之后的。  1951年(审查日本专利号S35-8281和美国专利号2762777)。 所谓的压模成型的目的是通过压缩工艺来挤压液体组分并固定颗粒的取向状态。 还要求压缩成型是获得所需形状的良好技术。 实验证明,如果将粉末放入容器中并在未压缩的情况下在磁场中加热,则与压缩模塑制得的产品相比,所得产品的密度较低,磁性能较差。 \n\n [0035] 后来,将压缩成型与烧结工艺相结合的技术进一步应用于烧结RCo磁体(美国专利3,684,593)和RFeB烧结磁体(日本专利1431617)。 施加磁场是定向粒子的基本过程。 但是,压缩的效果尚未特别检查。 \n\n [0036] [选择压模方法的原因] \n\n [0037] 之所以使用模压法,是因为它可以创建形状和尺寸接近最终产品的“最终形状”,并且是一种自动化的方法,具有很高的成品率。 尤其是,网状形状和成品率是使压模法广泛用作批量生产的合适技术的关键特征。 \n\n [0038] [RIP] \n\n [0039] 为了获得与CIP方法可比的相同效果,本发明人提出了橡胶等静压(RIP)方法(日本专利第2030923号)。 在这种方法中,将细粉放入橡胶模具中,并在施加脉冲磁场的同时,通过压模机压制整个模具。 类似于CIP的各向同性压力与脉冲磁场相结合,使得RIP方法能够赋予磁体更高的特性,而这种特性是无法通过模压获得的。  RIP过程包括以下步骤:填充橡胶模具,施加脉冲磁场,执行压缩成型和退磁。 这些顺序步骤可以自动进行批量生产。 \n\n [0040] [压入磁场的详细步骤] \n\n [0041] 在压模技术的悠久历史中,已经进行了许多尝试以使过程自动化,从而提高工作效率。 该过程通常包括以下步骤:   [0042]细粉通过进料器供应到模具中。[0043] 降低上冲头以封闭型腔。[0044] 施加了磁场。[0045] 在施加磁场的同时,用上下冲头挤压粉末。[0046] 施加去磁或交变磁场以使粉末压块退磁。[0047] 上冲头抬起。[0048] 抬起下部冲头(或降低模具)以将粉末压块推出模具顶部。[0049] 机械臂将粉状粉末转移到输送机上。[0050] 粉末压块被收集到特定区域。[0051] 粉末压块布置在烧结台板上。 \n\n [0052] 粉末压块以一定的间隔排列,以使它们不会相互碰撞或粘附。 在某些工作条件下,粉末压块可能会保存几天。 粉末冶金中使用的压模机是精密机器; 尽管如果使用单腔模具,则冲头和模具的定位相对容易,但是如果模具具有多个腔,则定位操作将很复杂。 所需要的磁铁有各种形式和尺寸:圆盘,矩形,环形,弧形等。 每当改变形式或尺寸时,必须进行麻烦的更换模具的工作。 \n\n [0053] [在磁场中压缩成型的目的和效果] \n\n [0054] 关于压缩成型的功能,在题为  罕见 --  地铁永磁体 ,由牛津CLARENDON PRESS的J. M. D. Coey编辑,1996年,第340-341页:“压紧载荷足以使压坯具有足够的强度,可以处理,但不会导致微晶明显的取向错误。”  J. Ormerod在题为“稀土永磁体的粉末冶金”的论文中写道,  粉末冶金 1989,第一卷。  32卷4期 247:“压制压力应足以使粉末压粉具有足够的机械强度以承受处理,但又不能高到引起颗粒取向不良的程度。” 两者都强调必须将粉末压块强烈压缩以使其足够坚固以进行处理,同时要认识到如果压力太强会发生取向错误的可能性。 \n\n [0055] [稀土磁体固有的问题] \n\n [0056] 稀土磁体包含约30重量%的稀土元素/稀土元素,其是化学活性的并且易于氧化。 烧结稀土磁体的制造方法包括处理具有约3μm的粒径且包含大量化学活性稀土元素的细颗粒的步骤。 细粉的每个颗粒都需要在磁场中沿相同方向定向。 因此,不可能像粉末冶金的正常情况那样预先对粉末进行造粒以改善其流动性。 由于细粉是按体积使用的,并且每个颗粒都像磁铁一样起作用,因此当将其供应到模腔中时,粉会形成桥。 因此,难以均匀地装载粉末。 \n\n [0057] [为了更好的定位] \n\n [0058] 在日本专利第3459477号,日本未经审查的专利第H08-167515号等中提出的方法中,添加润滑剂以增加模压过程中细粉的取向度。 润滑剂减小了细颗粒之间的摩擦,从而改善了它们在磁场中被压缩时的取向度。 但是,添加过多的润滑剂以获得足够的润滑效果会导致脱脂所需的时间更长。 已知一种液体润滑剂(例如,在未经审查的日本专利公开No.2000-306753中公开的液体润滑剂)具有良好的挥发性,并且据说几乎不残留在烧结体中。 但是,添加过多的润滑剂以增加取向度会降低模压加工后的粉末成形体的强度,从而导致处理上的问题。 压模机使用电磁体施加静磁场。 由电磁体产生的静磁场的最大强度被限制在大约10至15 kOe(1至1.5 T),因为磁通量由于铁芯而饱和。 在该磁场不变的情况下,如果增加压力,则粒子之间的摩擦力将比磁力强,从而使每个粒子旋转。 因此,发生了取向错误。 为了防止这种现象,已经提出了使用脉冲磁场的取向方法(日本专利第3307418号)。 已证实脉冲磁场可以达到1.5至5.5 T的强度,从而增强B r ,剩余磁通密度。 然而,如果如上述发明那样在模压机内产生脉冲磁场,则每次施加磁场时都会产生涡电流损耗或磁滞损耗,从而导致模头发热。 此外,脉冲磁场会瞬间冲击金属模具,并缩短精密构造的冲压机的寿命。 因此,上述方法是不切实际的。 \n\n [0059] [使粉末压实更牢固] \n\n [0060] 为了提高模压过程的可操作性,一些常规方法添加了有机粘合剂或润滑剂,而另一些采用湿模技术。 但是,这些方法都以使用强大的压缩力为前提。 因此,上述添加剂被牢固地限制在粉末压块内,使得它们不能通过在烧结过程之前进行的脱脂过程而被去除。 长时间在低温下加热粉末压块可以完全去除添加剂。 但是,这种方法会大大降低生产率。 如果将内部残留有有机成分的粉体加热到太高的温度,则常规元素将与碳和其他杂质反应,导致磁性能下降,耐腐蚀性降低。 \n\n [0061] [湿式成型] \n\n [0062] 为了在防止细粉的氧化的同时实现高取向度,一种常规方法将细粉与矿物油或合成油混合,然后在磁场中通过湿压缩成型将混合物成形(例如,日本专利No.  2859517)。 在该方法中,将通过使用喷射式粉碎机的粉碎处理而获得的细粉收集在矿物油或合成油中并与之混合,然后将该混合物注射到模腔中并通过压力压缩。 湿法成型是Sr铁氧体磁体制造技术的一种变型。 区别在于,水用于铁氧体磁体,而稀土磁体不允许使用水,而只能使用油或其他溶剂。 油中含有大量杂质,例如碳,这些杂质很难通过烧结过程去除。 尽管研究人员正在尝试发明易于蒸发并几乎没有残留物的新型油,但一旦将碳限制在紧密压缩的粉块中,则很难去除碳。 这种脱脂过程需要在油汽化且不与稀土反应的温度下进行。 为此,需要将粉末压粉体在相对较低的温度下长时间保持,这显着降低了批量生产效率。 如果不能充分进行脱脂,则残留的元素在高温下容易与稀土元素反应,从而使磁特性劣化并降低了耐腐蚀性。 \n\n [0063] [无氧过程] \n\n [0064] 在模压法中,细粉暴露于空气中。 在未经审查的日本专利公开No.H06-108104中提出的方法中,从加压磁场到输送到烧结炉中的步骤是在惰性气氛下进行的。 然而,实际上,必须除去散布在模具周围的细小颗粒并经常更换模具。 打开带有分散在内部的颗粒的腔室是危险的。 由于磁性细粉被大量使用并且易于形成桥,因此难以恒定地供给粉末。 因此,必须定期称量粉末压块并反馈有关结果。 与普通晶体相反,稀土磁体不允许使用大量的粘合剂和高压来产生坚固的粉末压块。 因此,所得粉末压块是易碎的。 使用杂物箱或类似工具允许操作员将手伸入压床并执行某些任务是危险且低效的。 综上所述,可以说在惰性气氛下将包括压模机在内的整个制造系统设定在大批量生产的基础上很难实现。 \n\n [0065] [为什么没有使用细粉] \n\n [0066] 即使冲模和冲头具有尽可能窄的间隙,也无法限制粒径为3μm的细颗粒。 因此,每次细粉被压缩时,一部分细粉将被喷射并在模具周围飞散。 这样的颗粒可能会着火或爆炸。 这些颗粒可以用自动除尘器收集。 但是,在这种情况下,需要定期清洁设备。 对于拥有世界上最先进技术的磁体制造商而言,用于批量生产的RFeB烧结磁体的晶粒尺寸以D计为4.5至6μm 50 即,用激光式粒度分布测定装置测定的粒度的中值。 众所周知,D 50  该值近似于用显微镜测得的实际晶粒尺寸。 金属间化合物R的单畴粒子的尺寸 2 铁 14 B小得多(0.2至0.5μm)。 因此,在烧结磁体的情况下,期望较小的晶粒尺寸将导致较强的矫顽力。 然而,实际上,矫顽力随着晶粒尺寸的减小而迅速下降,如图3所示。 日本待审专利公开No.S59-163802的第3页。 这一事实表明,在处理细粉的常规方法中不可避免地发生氧化。 包含化学活性稀土元素的RFeB合金粉末非常容易氧化,如果将其置于大气中会着火。 晶粒越小,着火的危险越大。 即使不点燃,粉末也容易被氧化成非磁性氧化物,该氧化物将残留在烧结磁体中并降低其磁性能。 然而,在常规方法中,不可避免的是,细粉在成型过程中以及当粉体被输送到烧结炉中时暴露于空气中。 如前所述,世界一流制造商生产的细颗粒的粒径约为4.5至6μm 50 ; 任何比该水平细的粉末即使被压缩成紧密的粉末也很容易被氧化。 在一些先前的尝试中,将油或液体润滑剂添加至细粉以获得防止氧化的协同作用。 但是,添加大量润滑剂或类似材料不仅会削弱粉末压块,还会留下碳或其他杂质,这会降低磁性能。 综上所述,实际上不可能使用其D 50  在常规的压模方法中为4μm或更小。 \n\n [0067] 如前所述,与用于制造RFeB烧结磁体的方法和系统有关的最严重的问题是难以将生产线构造为完全封闭的系统。 众所周知,在制造过程中,随着晶粒尺寸的减小或粉末或粉末压块的氧化程度降低,RFeB烧结磁体的特性会更高。 然而,随着粉末的表面较少被氧化或颗粒尺寸较小,粉末变得更具活性。 为了处理这种活性粉末,必须始终在生产线中填充惰性气体,例如氮气 2 。 即使最小量的空气侵入也会导致粉末发热。 由于在批量生产线中处理的粉末量非常大,因此少量的热量会增加并最终引起火灾。 当前,大多数具有磁各向异性的烧结RFeB磁体是通过采用模压法或RIP法的生产线生产的。 该生产线的一部分设计为在其内部空间充满惰性气体的情况下运行。 由这种生产线生产的具有磁各向异性的RFeB烧结磁体具有较高的特性,因为它们的氧化程度较低。 但是,这样的低氧生产线不能完全避免火灾,爆炸或类似严重事故的危险。 因此,即使已知使用这样的粉末将进一步改善特性,也难以使粉末具有比当前水平更高的活性。 难以将当前的生产线构造为完全封闭的系统的原因如下: \n\n [0068] 采用压模法的生产线: \n\n [0069] (1)要封闭的空间很大。 \n\n [0070] (2)在防止空气进入系统中的同时很难更换大模具。 \n\n [0071] (3)为了提高生产率,有必要在较短的时间周期内依次执行以下步骤:加载和压缩粉末,取出粉末压块,清洁粉末压块(即从表面去除不必要的粉末),布置 将粉末压块放在底板上,将装有粉末压块的底板装箱,然后将装有粉末压块的盒子放入烧结炉中。 实际上,在这些步骤中经常发生各种问题。 解决这些问题总是需要一些手动操作,而且经常发生的问题是,如果不向系统中引入空气,就无法解决这些问题。 \n\n [0072] 采用RIP方法的生产线: \n\n [0073] 为了提高生产率,有必要在短时间周期内依次执行以下步骤:将粉末高密度地装入橡胶模具中;通过磁场对粉末进行定向;压缩粉末;取出粉末压块;进行清洁 将粉体压实,将粉体压实在底板上,将粉体压实在底板上,然后将粉体压实的盒子放入烧结炉中。 该过程经常遇到许多问题,如采用模压法的生产线的情况那样,如果不将空气引入系统就无法解决其中的一些问题。 \n\n [0074] 在上述两种类型的生产线中,该系统不能成为完全封闭的系统的主要原因是必须在粉末压缩步骤之后从模具或橡胶模具中取出粉末压块。 从模具或橡胶模具中取出粉末压块的过程中,粉末压块可能会破裂或碎裂,或者不必要的粉末会粘附在其上。 类似地,粉末压块的破裂或碎裂可能在随后的处理操作期间发生。 由于机器人无法应对此类事故,因此有必要将空气引入系统,以便操作员可以手动解决问题。 因此,上述生产线可以作为封闭系统工作,仅用于临时生产基于RFeB的各向异性烧结磁体。 长时间连续运行非常困难。 在现场工作的人员不接受使用比目前使用的粉末更有活性的粉末; 这实际上是非常危险的。 \n\n [0075] 到目前为止,使用模压法或RIP法制造具有磁各向异性的RFeB烧结磁体的传统方法不适用于处理活性粉末。 这意味着,在大量生产的基础上,这些方法仅具有有限的范围以减小晶粒尺寸或降低粉末中所含的氧气量,以改善磁体的磁特性,尤其是矫顽力。 即使在世界一流的制造商生产最优质的RFeB磁体中,传统方法中使用的粉末的晶粒尺寸在D中也约为5μm 50 ,即通过激光型粒度分布测量方法测得的粒度分布的中值。 \n\n [0076] 用于制造具有磁各向异性的RFeB烧结磁体的方法的另一个问题是,如果磁体是板型或拱形板型,则其生产率下降。 这些类型占据了所有具有磁各向异性的RFeB烧结磁体的很大一部分。 在这些类型的磁体中,磁化方向垂直于磁体的主表面。 \n\n [0077] 一种用于制造板状磁体的常规方法是用具有外围切割刃的切割器将大块烧结磁体切成薄片。 该方法的一个缺点是昂贵的烧结磁体的一部分被切碎并浪费掉。 随着产品变薄,浪费部分的百分比增加。 另一个问题是该过程需要较长的加工(切削)时间,并且会严重磨损所用工具。 \n\n [0078] 制造板状磁体的另一种方法是在磁场中通过压模法逐块地制造粉末压块,然后分别烧结每块板状磁体。 该方法的一个缺点是需要通过施加平行于磁场的压力来形成板状磁体。 以这种方式施加压力会导致粉末在压缩过程中发生取向错误,从而导致所得烧结磁体的最大能量乘积比通过施加垂直于磁场的压力所产生的磁体的最大能量乘积低近10 MGOe。  。 此外,板状磁体的逐件压制和烧结是无效的。 可以采用多腔压制方法,该方法使用多个模腔来创建或烧结多个粉末压块。 然而,由于要施加的压力的限制,可以同时产生的粉末压块的数量最多为大约二至四个。 因此,该方法不能显着提高生产率。 \n\n [0079] 当通过常规方法制造弓形板状磁体时,在平行于磁场的方向上施加压力。 该方法还具有与先前结合板状磁体的制造所描述的相同的问题。 即,由于烧结后磁铁的取向度低,所以磁铁的最大能量积低。 而且,从模制到烧结的过程是无用的,而与是否分别制造每个磁体还是采用采用多个模腔的多腔模制方法无关。 \n\n [0080] 在通过常规方法制造弓形板状磁体的情况下,施加垂直于磁场的压力导致烧结磁体的最大能量积的增加。 但是,仍然存在生产率低下的问题。 另一个问题是该方法限制了形状像弓形板的粉末压块的高度。 \n\n [0081] 常规制造方法的又一个问题是它们不能制造具有圆形或不规则横截面的长尺寸烧结体。 在模压法中,施加平行于磁场的压力限制了压粉体的长度(或高度)的允许范围,并且降低了获得的磁体的最大能量积。 相反,施加垂直于磁场的压力以产生长的物体限制了可以形成的粉末成形体的横截面,从而不可能获得接近净的形状。 \n\n [0082] 传统生产方法的另一个缺点是难以制造具有高特性的环形扁平磁体。 环形扁平磁体必须在垂直于磁盘表面的方向上磁化。 环形扁平磁铁是通过施加平行于磁场的压力而产生的。 但是,通过这种方法产生的磁体的最大能量乘积比通过施加垂直于磁场的压力的方法获得的近似低10 MGOe。  RIP法最初被期望作为具有高特性的环状扁平磁体的制造方法,但由于诸如在加工过程中形状变形之类的一些问题,目前尚未用于环状扁平磁体的制造。 成型过程。 \n\n [0083] 传统方法的另一个问题是它们不能直接烧结小尺寸的粉末压块以产生相应的小类型的烧结磁体,例如厚度为1mm或更小的薄板磁体或长尺寸的烧结磁体。 具有圆形或不规则横截面,直径为1毫米或在一侧。 这部分是因为不能通过模压法或RIP法产生这样的小尺寸粉末压块,部分是由于难以在不将所得的小尺寸粉末压块排列在其上的过程中处理所得的小尺寸粉末压块 底板,将它们装箱并放入烧结炉中。 金属注入法(MIM)是可用于这种情况的方法。 然而,由于诸如残留碳杂质之类的一些问题,该方法在基于RFeB的各向异性烧结磁体的生产中并不流行。 \n\n [发明目的] \n\n [0084] 在用于制造具有磁各向异性的稀土类烧结磁体的方法和系统领域中,本发明的目的是解决与当前使用模压法制造烧结磁体的方法和系统有关的基本问题。 为了制造具有更高的最大能量乘积和更高的矫顽力的RFeB烧结磁体,以及RIP方法。 提高板磁体和拱形板磁体的生产效率; 提供一种用于制造具有高取向度的环形磁体的装置; 并且提供一种用于制造具有圆形或不规则横截面的长尺寸烧结体和尺寸为1mm或更小的小尺寸烧结体的方法。 \n\n 解决问题的手段 \n\n [0085] 为了解决目前为止描述的问题,本发明的第一方式提供了一种用于制造具有高密度和高取向度的磁各向异性的烧结稀土磁体的方法,其特征在于其包括以下步骤: 的: \n\n [0086] a)将合金粉末装入具有空腔的容器(以下称为“模具”)中,该空腔的形状与要获得的产品的形状相对应; \n\n [0087] b)对合金粉末施加强磁场以使合金粉末取向; \n\n [0088] c)通过加热包含在模具中的合金粉末同时允许从合金粉末释放的气体成分从模具中逸出来形成烧结体; 和 \n\n [0089] d)从模具中取出合金粉末的烧结体。 \n\n [0090] 优选地,空腔的设计应考虑要获得的产品的形状和尺寸以及在烧结过程中发生的收缩。 具有高密度和高取向度的烧结体被定义为其密度等于或高于理论密度的97%,并且其取向度由残余磁化率(J r )到饱和磁化强度(J s 如果通过脉冲磁化测量技术使用最大磁场强度10 T测量磁化强度,则等于或高于93%。 \n\n [0091] 根据本发明的方法的第二种模式,其特征在于: \n\n [0092] a)将合金粉末装入高密度模具中; \n\n [0093] b)对合金粉末施加强磁场以使合金粉末取向; \n\n [0094] c)通过加热包含在模具中的合金粉末同时允许从合金粉末释放的气体成分从模具中逸出来形成预烧结体; \n\n [0095] d)从模具中取出预备烧结体或除去模具的一部分,然后通过在高于预备加热温度的温度下加热预备烧结体来形成烧结体的步骤; 和 \n\n [0096] e)从模具的其余部分取出烧结体。 \n\n [0097] 根据本发明的方法的第三模式取决于第一或第二模式,其特征在于合金粉末在模具中的填充密度在合金的真实密度的35%至60%的范围内。 \n\n [0098] 如果仅允许合金粉末自由落入型腔中,则粉末的负载密度通常约为理论密度的20%。 在本发明中,优选使装载密度为35%以上。 如果密度低于35%,则在烧结步骤之后的烧结体的密度将太低,从而在烧结体内部形成大的空隙。 这样的烧结磁体实际上是不可用的。  60%或更高的加载密度是不希望的,因为这会阻碍合金粉末的磁取向。 \n\n [0099] 根据本发明的方法的第四模式取决于第三模式,并且特征在于合金粉末的填充密度在真实密度的40%至55%的范围内。 \n\n [0100] 该范围比第三模式中指定的范围更优选。 \n\n [0101] 根据本发明的方法的第五模式取决于第一至第四模式中的一个,并且特征在于定向磁场为2T或更高。 \n\n [0102] 获得具有一定取向度(J的烧结磁铁 r / J s )等于或高于93%,取向磁场应优选为2T或更高。 \n\n [0103] 根据本发明的方法的第六模式取决于第五模式,并且特征在于定向磁场为3T或更高。 该模式给出了取向磁场的更优选范围。 \n\n [0104] 根据本发明的方法的第七模式取决于第六模式,并且特征在于定向磁场为5T或更高。 该模式给出了取向磁场的更优选范围。 \n\n [0105] 根据本发明的方法的第八种模式取决于第五种至第七种模式之一,其特征在于,定向磁场是脉冲磁场。 \n\n [0106] 根据本发明的方法的第九模式取决于第八模式,并且特征在于定向磁场是交变磁场。 \n\n [0107] 根据本发明的方法的第十模式取决于第五至第九模式之一,其特征在于多次施加定向磁场。 \n\n [0108] 根据本发明的方法的第十一种模式取决于第十种模式,其特征在于,定向磁场是交变磁场和直流磁场的组合。 \n\n [0109] 根据本发明的方法的第十二模式取决于第一至第十一模式中的一个,并且特征在于将润滑剂添加到合金粉末中。 \n\n [0110] 根据本发明的方法的第十三模式取决于第十二模式,其特征在于,润滑剂由固体或液体润滑剂或两者组成。 \n\n [0111] 根据本发明的方法的第十四模式取决于第十三模式,其特征在于液体润滑剂的主要成分是脂肪酸酯或解聚的聚合物。 \n\n [0112] 第六至第十四模式中的每一个都提供了一种增强取向度的方法。 \n\n [0113] 根据本发明的方法的第十五模式取决于第一至第十四模式中的一个,并且特征在于合金粉末的晶粒尺寸为4μm或更小。 \n\n [0114] 具有如此小的晶粒尺寸的粉末太活泼,以至于不能用于采用模压或RIP技术的常规磁体制造方法中。 本发明允许将这种粉末用于大规模生产基于RFeB的高性能各向异性烧结磁体。 \n\n [0115] 根据本发明的方法的第十六模式取决于第十五模式,并且特征在于合金粉末的晶粒尺寸为3μm或更小。 这种条件使磁体的特性高于第十五模式。 \n\n [0116] 根据本发明的方法的第十七模式取决于第十六模式,并且特征在于合金粉末的晶粒尺寸为2μm或更小。 这种条件使磁体的特性高于第十六模式。 \n\n [0117] 根据本发明的方法的第十八模式取决于第十七模式,并且特征在于合金粉末的晶粒尺寸为1μm或更小。 这种情况使磁体的特性高于第十七模式。 \n\n [0118] 根据本发明的方法的第十九模式取决于第十六至第十八模式之一,其特征在于合金粉末的晶粒尺寸为3μm或更小,并且烧结温度为1030摄氏度或更小。 \n\n [0119] 这些条件增强了烧结RFeB磁体的特性,并使模具的寿命更长。 \n\n [0120] 根据本发明的方法的第二十模式取决于第十九模式,其特征在于合金粉末的晶粒尺寸为2μm或更小,并且烧结温度为1010摄氏度或更小。 与第十九模式相比,本模式进一步增强了烧结RFeB磁体的特性,并使模具的寿命更长。 \n\n [0121] 根据本发明的方法的第二十一模式取决于第一至第二十模式中的一个,并且特征在于模具的一部分或全部被多次使用。 \n\n [0122] 当工业上实施本发明时,这对于提高生产率是必要的。 \n\n [0123] 根据本发明的方法的第二十二种模式取决于第一至第二十一种模式中的一种,其特征在于模具具有多个型腔。 \n\n [0124] 根据本发明的方法的第二十三模式取决于第一至第二模式中的一个,并且特征在于,每个腔是柱状的。 \n\n [0125] 这是一种网状制造方法,可用于生产具有圆形或不规则横截面的长形产品。 \n\n [0126] 根据本发明的方法的第二十四模式取决于第一至第二模式中的一种,其特征在于,在管状空腔的中心处设置有柱状芯。 \n\n [0127] 根据本发明的方法的第二十五模式取决于第二十四模式,其特征在于,在将合金粉末装载到型腔中并且施加磁场以使粉末取向之后,去除芯部。 从模具中取出或用较薄的模具代替,然后将粉末烧结。 \n\n [0128] 第二十四模式和第二十五模式使得可以制造环形管状磁体,其特性与通过施加垂直于磁场的压力的方法所产生的磁体的特性相当。 通过常规方法不可能获得这种磁体。 \n\n [0129] 根据本发明的方法的第二十六模式取决于第二十三至第二十五模式之一,并且其特征在于,沿着空腔的轴向施加磁场以使合金粉末取向。 \n\n [0130] 根据本发明的方法的第二十七模式取决于第二十六模式,其特征在于,在轴向两端处与腔体的盖和底部相对应的部分由铁磁材料制成。  。 \n\n [0131] 第二十六和第二十七模式提供了用于使柱状或圆柱状烧结体的变形最小化的装置。 \n\n [0132] 根据本发明的方法的第二十八模式取决于第二十二模式,并且特征在于腔是板状的。 这种模式提供了一种生产板状磁体的高产手段。 \n\n [0133] 根据本发明的方法的第二十九模式取决于第二十二模式,其特征在于,空腔的形状像弓形板。 这种模式为生产弧形板磁体提供了一种高产的手段。 \n\n [0134] 根据本发明的方法的第三十模式取决于第二十八或第二十九模式,其特征在于沿着垂直于空腔的平坦或拱形表面的方向施加磁场以使合金粉末取向 。 \n\n [0135] 根据本发明的方法的第三十一模式取决于第三十模式,其特征在于,腔的平坦或弓形表面由非磁性材料或饱和磁化强度为1.5T或更小的材料制成。 \n\n [0136] 根据本发明的方法的第二十二模式取决于第二十一模式,其特征在于饱和磁化强度为1.3T或更小。 \n\n [0137] 在制造板状磁体或拱形板状磁体时,第三十至第二十三种模式提供了用于获得高密度,无空隙的烧结体的手段。 \n\n [0138] 根据本发明的方法的第三十三种模式取决于第二十二种至第三十二种模式中的一种,其特征在于,在模具中布置了两行或更多行的型腔。 \n\n [0139] 根据本发明的方法的第三十四模式取决于第一至第三模式中的一个,并且特征在于模具的形成壁的部分平行于通过磁力使合金粉末定向的方向的壁。 磁场部分或全部由铁磁材料制成。 \n\n [0140] 根据本发明的方法的第三十五模式取决于第一至第三十四模式中的一个,并且其特征在于,空腔的内壁覆盖有抗燃烧涂层。 \n\n [0141] 根据本发明的方法的第三十六种模式取决于第一至第三种模式中的一种,其特征在于通过以下一种或两种或更多种的组合将合金粉末强力加载到模具中 方法:利用机械振动的机械攻丝法,利用推杆的压力法和利用强气流的空气攻丝法。 \n\n [0142] 根据本发明的方法的第三十七模式取决于第一至第三十六模式中的一个,并且特征在于合金粉末是通过将通过淬火熔融金属而产生的合金粉碎而获得的细粉。 \n\n [0143] 用于制造具有磁各向异性的稀土类烧结磁体的系统的第一模式的特征在于: \n\n [0144] a)合金粉末装载装置,用于将通过将合金粉碎而产生的合金粉末装载到高密度的模具中; \n\n [0145] b)用于使合金粉末在磁场中取向的取向装置, \n\n [0146] c)一种烧结装置,用于在将合金粉末保持在模具中时对其进行烧结; \n\n [0147] d)一个转移装置,用于将模具从合金粉末装载装置通过定向装置转移到烧结装置; \n\n [0148] e)装有合金粉末装载装置,定向装置,烧结装置和转移装置的容器; 和 \n\n [0149] f)一种气氛调节装置,用于用惰性气体气氛填充容器的内部空间或排空内部空间。 \n\n [0150] 用于制造具有磁各向异性的稀土类烧结磁体的系统的第二种模式的特征在于: \n\n [0151] a)合金粉末装载装置,用于将通过将合金粉碎而产生的合金粉末装载到高密度的模具中; \n\n [0152] b)用于使合金粉末在磁场中取向的取向装置, \n\n [0153] c)初步烧结装置,用于将保持在模具中的合金粉末进行初步烧结,直到粉末能够保持其形状为止; \n\n [0154] d)主要烧结装置,用于完全烧结预烧结的合金粉末; \n\n [0155] e)用于将模具从合金粉末装载装置通过定向装置和预烧结装置转移到主烧结装置的转移装置; \n\n [0156] f)一个装有合金粉末装载装置,定向装置,预烧结装置,主烧结装置和转移装置的容器; 和 \n\n [0157] g)一种气氛调节装置,用于用惰性气体气氛填充容器的内部空间或排空内部空间。 \n\n [0158] 这些模式提供了用于提高用于执行本发明的系统的安全级别的手段。 \n\n [0159] 根据本发明的制造系统的第三模式的特征在于,其包括包围上述容器的外部容器。 该模式提供了一种用于进一步提高用于执行本发明的系统的安全级别的手段。 \n\n 实施发明的方式及其效果 \n\n [0160] 根据本发明,具有磁性各向异性的烧结稀土磁体的制造方法包括以下步骤:将细粉装入具有空腔的模具中,然后通过外部磁场使粉末取向并烧结。 粉末完好无损。 根据要获得的产品的形状和尺寸来设计空腔的形状和尺寸。 优选地,设计应考虑在烧结过程中将发生的收缩。 \n\n [0161] 根据本发明的方法适用于生产RCo(稀土钴)磁体或RFeB(稀土/铁/硼)磁体。 \n\n [0162] 根据本发明,在将细粉装载到模具中之后,施加磁场,然后立即执行烧结步骤。 这个过程永远不会让微粒飞来飞去,因此即使是稀土磁铁的细粉也可以安全地处理。 \n\n [0163] 根据本发明,装载细粉,施加磁场并将其转移到烧结炉的步骤全部在氩气,氮气或其他惰性气体的气氛下或在真空下进行。 稀土磁体会受到杂质(例如氧气)的影响。 无论磁体是RFeB型还是SmCo型,都必须确定其成分,以使其所含的稀土元素比其化学计量的成分要多,并考虑到将被氧化的稀土元素的量。 然而,在这种情况下,非磁性相也增加,这使特性劣化。 如果将本发明的方法用于制造RFeB,SmCo或其他类型的稀土磁体,则细粉将永远不会与空气接触,因此所得的烧结体将包含较少的氧气。 由于不需要估计稀土被氧化的量,因此可以将稀土的总量(Nd,Sm)降至最低水平,进而改善了磁特性。 由于没有压缩过程,所以取向度保持在较高水平,因此B r  能源产品将很高。 